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Sample records for proton bombarded silicon

  1. Diagnosis by proton bombardment

    International Nuclear Information System (INIS)

    Steward, V.W.; Koehler, A.M.

    1976-01-01

    Beams of monoenergetic protons or other charged ions are passed through the living human body to detect abnormalities and obstructions in body tissue, which abnormalities and obstructions are visualized as density variations in the particle image emerging from the body part under investigation. The particles used are preferably protons having an energy of 100 to 300 MeV, more especially 200 to 300 MeV. The method is of use in detecting inter alia tumors, blood clots, infarcts, soft tissue lesions and multiple sclerosis in patients without exposure to high radiation dosages. 6 claims, 2 drawing figures

  2. Ion bombardment and disorder in amorphous silicon

    International Nuclear Information System (INIS)

    Sidhu, L.S.; Gaspari, F.; Zukotynski, S.

    1997-01-01

    The effect of ion bombardment during growth on the structural and optical properties of amorphous silicon are presented. Two series of films were deposited under electrically grounded and positively biased substrate conditions. The biased samples displayed lower growth rates and increased hydrogen content relative to grounded counterparts. The film structure was examined using Raman spectroscopy. The transverse optic like phonon band position was used as a parameter to characterize network order. Biased samples displayed an increased order of the amorphous network relative to grounded samples. Furthermore, biased samples exhibited a larger optical gap. These results are correlated and attributed to reduced ion bombardment effects

  3. Catalytic oxidation of silicon by cesium ion bombardment

    International Nuclear Information System (INIS)

    Souzis, A.E.; Huang, H.; Carr, W.E.; Seidl, M.

    1991-01-01

    Results for room-temperature oxidation of silicon using cesium ion bombardment and low oxygen exposure are presented. Bombardment with cesium ions is shown to allow oxidation at O 2 pressures orders of magnitude smaller than with noble gas ion bombardment. Oxide layers of up to 30 A in thickness are grown with beam energies ranging from 20--2000 eV, O 2 pressures from 10 -9 to 10 -6 Torr, and total O 2 exposures of 10 0 to 10 4 L. Results are shown to be consistent with models indicating that initial oxidation of silicon is via dissociative chemisorption of O 2 , and that the low work function of the cesium- and oxygen-coated silicon plays the primary role in promoting the oxidation process

  4. Aerosol composition studies using accelerator proton bombardment

    International Nuclear Information System (INIS)

    Nelson, J.W.; Winchester, J.W.; Akselsson, R.

    1974-01-01

    The proton beam of the Florida State University Tandem Van de Graaff Accelerator is being used to make quantitative determinations of the composition of particulate matter found in the atmosphere. Proton scattering using 16 MeV incident particle energy is employed to resolve the light elements (up to Cl), while elements Al and heavier are observed via proton induced x-ray emission analysis. In order to realize advantages of these proton excited analyses, specialized techniques are used, such as the use of uniform beams which entirely cover the area of targets of nonuniform areal density. Also, specialized air sampling equipment was built to take advantage of the small size of samples required for proton-induced analyses. The multielement character, ease of automation, and short time (several minutes) needed for analysis make these techniques attractive from the standpoint of analysis cost per sample

  5. Probabilities of symmetric and asymmetric fission in the proton bombardment of Th{sup 232}

    Energy Technology Data Exchange (ETDEWEB)

    Bowles, B J [Atomic Energy Research Establishment, Chemistry Div., Harwell (United Kingdom); Brown, F; Butler, J P

    1957-08-01

    The ratio of symmetric to asymmetric fission in the proton bombardment of Th{sup 232} does not rise steadily with increasing proton energy; a periodic decrease in superposed upon the over-all increase. This is attributed to the changing pattern of various fission reactions, (p,f), (p,nf), etc. (author)

  6. Silicon transport in sputter-deposited tantalum layers grown under ion bombardment

    International Nuclear Information System (INIS)

    Gallais, P.; Hantzpergue, J.J.; Remy, J.C.; Roptin, D.

    1988-01-01

    Tantalum was sputter deposited on (111) Si substrate under low-energy ion bombardment in order to study the effects of the ion energy on the silicon transport into the Ta layer. The Si substrate was heated up to 500 0 C during growth. For ion energies up to 180 eV silicon is not transported into tantalum and the growth temperature has no effect. An ion bombardment energy of 280 eV enhances the transport of silicon throughout the tantalum layer. Growth temperatures up to 300 0 C have no effect on the silicon transport which is mainly enhanced by the ion bombardment. For growth temperatures between 300 and 500 0 C, the silicon transport is also enhanced by the thermal diffusion. The experimental depth distribution of silicon is similar to the theoretical depth distribution calculated for the case of an interdiffusion. The ion-enhanced process of silicon transport is characterized by an activation energy of 0.4 eV. Silicon into the layers as-grown at 500 0 C is in both states, amorphous silicide and microcrystalline cubic silicon

  7. Statistical characterization of surface defects created by Ar ion bombardment of crystalline silicon

    International Nuclear Information System (INIS)

    Ghazisaeidi, M.; Freund, J. B.; Johnson, H. T.

    2008-01-01

    Ion bombardment of crystalline silicon targets induces pattern formation by the creation of mobile surface species that participate in forming nanometer-scale structures. The formation of these mobile species on a Si(001) surface, caused by sub-keV argon ion bombardment, is investigated through molecular dynamics simulation of Stillinger-Weber [Phys. Rev. B 31, 5262 (1985)] silicon. Specific criteria for identifying and classifying these mobile atoms based on their energy and coordination number are developed. The mobile species are categorized based on these criteria and their average concentrations are calculated

  8. Effects of hyperthermal proton bombardment on alkanethiol self-assembled monolayer on Au(1 1 1)

    Energy Technology Data Exchange (ETDEWEB)

    Xi Luan [Surface Science Western, University of Western Ontario, London, Ontario N6A 5B7 (Canada); Zheng Zhi; Lam, N.-S. [Department of Physics, Chinese University of Hong Kong, Shatin, Hong Kong (China); Grizzi, Oscar [Centro Atomico Bariloche, 8400 San Carlos de Bariloche, Rio Negro (Argentina); Lau, W.-M. [Surface Science Western, University of Western Ontario, London, Ontario N6A 5B7 (Canada)], E-mail: llau22@uwo.ca

    2007-10-31

    The effects of hyperthermal proton bombardment on alkanethiol self-assembled monolayer (SAM) on Au(1 1 1) are studied with scanning tunneling microscopy (STM) and X-ray photoemission spectroscopy (XPS). The STM and XPS results show that proton bombardment with proton energy as low as 2 eV can induce cross-linking of the adsorbed alkanethiols and transform the original ordered SAM lattice to an array of nanoclusters of the cross-linked alkanethiols. For a bombardment at 3 eV with a fluence of 3x10{sup 15} cm{sup -2}, the typical cluster size is about 5 nm. In addition, the cluster size distribution is narrow, with no cluster larger than 8 nm. The cluster growth can be promoted by increasing the fluence at a fixed bombardment energy or increasing the energy at a fixed fluence. This indicates that surface diffusion of alkanethiols and cluster growth can be harnessed by the control of the bombardment energy and fluence.

  9. Effects of hyperthermal proton bombardment on alkanethiol self-assembled monolayer on Au(1 1 1)

    International Nuclear Information System (INIS)

    Xi Luan; Zheng Zhi; Lam, N.-S.; Grizzi, Oscar; Lau, W.-M.

    2007-01-01

    The effects of hyperthermal proton bombardment on alkanethiol self-assembled monolayer (SAM) on Au(1 1 1) are studied with scanning tunneling microscopy (STM) and X-ray photoemission spectroscopy (XPS). The STM and XPS results show that proton bombardment with proton energy as low as 2 eV can induce cross-linking of the adsorbed alkanethiols and transform the original ordered SAM lattice to an array of nanoclusters of the cross-linked alkanethiols. For a bombardment at 3 eV with a fluence of 3x10 15 cm -2 , the typical cluster size is about 5 nm. In addition, the cluster size distribution is narrow, with no cluster larger than 8 nm. The cluster growth can be promoted by increasing the fluence at a fixed bombardment energy or increasing the energy at a fixed fluence. This indicates that surface diffusion of alkanethiols and cluster growth can be harnessed by the control of the bombardment energy and fluence

  10. Test of superconducting radio-frequency cavity bombarded by protons

    Science.gov (United States)

    O'Donnell, J. M.; McCloud, B. J.; Morris, C. L.; McClelland, J. B.; Rusnak, B.; Thiessen, H. A.; Langenbrunner, J. L.

    1992-05-01

    A beam of 2 × 10 10 protons/s was focused onto a small area on the high-field iris of a superconducting cavity operating at the resonance frequency. The input, reflected, and stored power were monitored. The cavity remained in steady state during this test. We conclude that such superconducting cavities will remain viable in the high-proton-flux environments proposed in the design of a superconducting accelerator for pions (PILAC).

  11. Test of superconducting radio-frequency cavity bombarded by protons

    Energy Technology Data Exchange (ETDEWEB)

    O' Donnell, J.M.; McCloud, B.J.; Morris, C.L.; McClelland, J.B.; Rusnak, B.; Thiessen, H.A. (Los Alamos National Lab., NM (United States)); Langenbrunner, J.L. (Dept. of Physics and Astronomy, Univ. Minnesota, Minneapolis, MN (United States))

    1992-05-10

    A beam of 2x10{sup 10} protons/s was focused onto a small area on the high-field iris of a superconducting cavity operating at the resonance frequency. The input, reflected, and stored power were monitored. The cavity remained in steady state during this test. We conclude that such superconducting cavities will remain viable in the high-proton-flux environments proposed in the design of a superconducting accelerator for pions (PILAC). (orig.).

  12. Peculiarities of phase transformations in molybdenum-silicon system under ion bombardment

    International Nuclear Information System (INIS)

    Gurskij, L.I.; Zelenin, V.A.; Bobchenok, Yu.L.

    1984-01-01

    The problems of effect of ion bombardment and thermal treatment on the mechanisms of formation of transition layers and structural transformations in the molybdenum-silicon system, where the interface is subjected to ion bombardment through a film of molybdenum, are considered. The method of electron diffraction analysis has been applied to establish that at the molybdenum-silicon interface a transitional region appears during irradiation which has a semiamorphous structure at the doses up to 8x10 14 ion/cm 2 , while at higher doses it transforms into polycrystalline intermediate layer which consists of MoB and the compound close in composition to MoSisub(0.65). Due to thermal treatment for 60873 K a large-grain phase (Mo 3 Si+MoSi 2 ) appears in the transition layer below which a large-grain silicon layer is placed

  13. Foil analysis of 1.5-GeV proton bombardment of a mercury target

    CERN Document Server

    Charlton, L A; Glasgow, D C; Gabriel, T A

    1999-01-01

    The number of reactant nuclei in a series of foils surrounding a container of mercury that has been bombarded by 1.5-GeV protons is calculated and compared with experimental measurements. This procedure is done to aid in the validation of the mercury cross sections used in the design studies of the Spallation Neutron Source (SNS). It is found that the calculations match the measurements to within the uncertainties inherent in the analysis.

  14. Oxidation under electron bombardment. A tool for studying the initial states of silicon oxidation

    Energy Technology Data Exchange (ETDEWEB)

    Carriere, B.; Deville, J.P.; El Maachi, A.

    1987-06-01

    The exciting beam of an Auger electron spectrometer has been used to monitor the oxidation of silicon single crystals at room temperature and very low pressures of oxygen (approx. 10/sup -7/ Torr). This process allows us to build ultra-thin layers of silica on silicon (down to 30 A) but it is mostly used to investigate the mechanisms of the initial stages of oxidation. Auger spectra recorded continuously during the oxidation process provide information on (1) the nature of the silicon-oxygen chemical bonds which are interpreted through fine structure in the Auger peak, and (2) the kinetics of oxide formation which are deduced from curves of Auger signal versus time. An account is given of the contribution of these Auger studies to the description of the intermediate oxide layer during the reaction between silicon and oxygen and the influence of surface structural disorder, induced mainly by argon-ion bombardment, is discussed in terms of reactivity and oxide coverage.

  15. The search for molecular effects in range corrections: boron determination by proton bombardment

    International Nuclear Information System (INIS)

    Olivier, C.; Peisach, M.

    1985-01-01

    Three different nuclear reactions viz. 10 B(p,αγ) 7 Be, 10 B(p,p,'γ) 10 B, and 11 B(p,p'γ) 11 B were used to analyse 21 pure boron compounds and mixtures of known composition by prompt gamma-ray spectrometry under proton bombardment. Elemental stopping powers were calculated from tables and used to compute the stopping power of the target matrices by Bragg's Law. Apparent discrepancies in the measured yield could point to deviations from Bragg's Law and hence to molecular effects. The maximum value for any molecular effect was found to be < 8,3%

  16. The influence of noble-gas ion bombardment on the electrical and optical properties of clean silicon surfaces

    International Nuclear Information System (INIS)

    Martens, J.W.D.

    1980-01-01

    A study of the effect of argon and helium ion bombardment on the electrical and optical properties of the clean silicon (211) surface is described. The objective of the study was to determine the effect of noble gas ions on the density of surface states at the clean silicon surface. (Auth.)

  17. Depth profiling using C60+ SIMS-Deposition and topography development during bombardment of silicon

    International Nuclear Information System (INIS)

    Gillen, Greg; Batteas, James; Michaels, Chris A.; Chi, Peter; Small, John; Windsor, Eric; Fahey, Albert; Verkouteren, Jennifer; Kim, K.J.

    2006-01-01

    A C 60 + primary ion source has been coupled to an ion microscope secondary ion mass spectrometry (SIMS) instrument to examine sputtering of silicon with an emphasis on possible application of C 60 + depth profiling for high depth resolution SIMS analysis of silicon semiconductor materials. Unexpectedly, C 60 + SIMS depth profiling of silicon was found to be complicated by the deposition of an amorphous carbon layer which buries the silicon substrate. Sputtering of the silicon was observed only at the highest accessible beam energies (14.5 keV impact) or by using oxygen backfilling. C 60 + SIMS depth profiling of As delta-doped test samples at 14.5 keV demonstrated a substantial (factor of 5) degradation in depth resolution compared to Cs + SIMS depth profiling. This degradation is thought to result from the formation of an unusual platelet-like grain structure on the SIMS crater bottoms. Other unusual topographical features were also observed on silicon substrates after high primary ion dose C 60 + bombardment

  18. Nuclear forensics of a colored gemstone: evidence of proton bombardment of a blue topaz

    International Nuclear Information System (INIS)

    Steinhauser, Georg; Sterba, Johannes H.; Hammer, Vera M.F.

    2013-01-01

    A blue topaz was investigated radiologically for forensic purposes. It clearly exhibited detectable activities of 22 Na (0.28±0.01 Bq). The occurrence of this artificial radionuclide evidences fraudulent irradiation of the gemstone with protons to give it its blue color. It can be assumed that also 7 Be must have been produced in the course of proton bombardment, yielding even greater activities than 22 Na. Since no traces of short-lived 7 Be could be detected, the topaz must have been irradiated at least 300 days prior to measurement. - Highlights: ► A blue topaz was radiologically investigated for forensic purposes. ► Detectable activities of 22 Na were found. ► The lack of 7 Be indicates that the gemstone was irradiated >300 d prior to measurement. ► The irradiation was performed by fraudulent intent to give the topaz the blue color

  19. Low temperature magnetron sputter deposition of polycrystalline silicon thin films using high flux ion bombardment

    International Nuclear Information System (INIS)

    Gerbi, Jennifer E.; Abelson, John R.

    2007-01-01

    We demonstrate that the microstructure of polycrystalline silicon thin films depends strongly on the flux of low energy ions that bombard the growth surface during magnetron sputter deposition. The deposition system is equipped with external electromagnetic coils which, through the unbalanced magnetron effect, provide direct control of the ion flux independent of the ion energy. We report the influence of low energy ( + on the low temperature ( + ions to silicon neutrals (J + /J 0 ) during growth by an order of magnitude (from 3 to 30) enables the direct nucleation of polycrystalline Si on glass and SiO 2 coated Si at temperatures below 400 degree sign C. We discuss possible mechanisms for this enhancement of crystalline microstructure, including the roles of enhanced adatom mobility and the formation of shallow, mobile defects

  20. Recovery of 201Tl by ion exchange chromatography from proton bombarded thallium cyclotron targets

    International Nuclear Information System (INIS)

    Walt, T.N. van der; Naidoo, C.

    2000-01-01

    A method based on ion exchange chromatography is presented for the recovery of 201 Tl and its precursor 201 Pb from proton bombarded natural thallium cyclotron targets. After bombardment the target is dissolved in diluted nitric acid. Water, hydrazine and ammonium acetate are added to the solution and the lead radioisotopes separated from the thallium by cation exchange chromatography on a Bio-Rex 70 column. The sorbed lead radioisotopes are eluted with dilute nitric acid and the separation repeated on a second Bio-Rex 70 column. After elution of the remaining thallium the column is left for 32 hours and the 201 Tl formed by decay of 201 Pb is eluted with an ammonium acetate solution. The 201 Tl eluate is acidified with a HNO 3 -HBr-Br 2 mixture and the resulting solution is passed through an AG MP-1 anion exchanger column to remove any remaining lead isotopes. The 201 Tl is eluted with a hydrazine solution, the eluate evaporated to dryness and the 201 Tl finally dissolved in an appropriate solution to produce a 201 TlCl solution suitable for medical use. A high quality 201 Tl product is obtained containing ≤ 0.1 μg of Tl/mCi (37 MBq) 201 Tl. The radionuclidic impurities are less than the maximum values specified by the US Pharmacopoeia and the British Pharmacopoeia. (orig.)

  1. Production of 95mTc with proton bombardment of 95Mo

    International Nuclear Information System (INIS)

    Izumo, M.; Matsuoka, H.; Sorita, T.; Nagame, Y.; Sekine, T.; Hata, K.; Baba, S.

    1991-01-01

    Formation cross sections of 95m Tc and 95g Tc via the 95 Mo (p,n) reaction have been measured to evaluate the production yield of 95m Tc which is expected to be a useful radiotracer of technetium isotopes. It was found from the cross section data that for incident proton energies above 15 MeV, the thick-target yield of 95m Tc was more than 20 μCi/μAh at the end of bombardment and the 95g Tc contamination was less than 1% after 12 d cooling. To examine the separation and purification of 95m Tc from target, we have carried out a test production of 95m Tc using a thick 95 Mo-enriched target. Other reactions of producing 95m Tc are compared and discussed in terms of the production yield and amounts of contaminants. (author)

  2. Energy dependence of the absorptive potential for sub-Coulomb energy proton bombardment of zirconium and molybdenum isotopes

    International Nuclear Information System (INIS)

    Flynn, D.S.; Hershberger, R.L.; Gabbard, F.

    1985-01-01

    The measured (p,p) and (p,n) excitation functions for /sup 92,94,96/Zr and /sup 95,98,100/Mo were fitted in the energy range 2 3 for all isotopes studied as the proton bombarding energy is increased toward 15 MeV. This result is consistent with results from analyses at higher energies

  3. Angular dependence of secondary ion emission from silicon bombarded with inert gas ions

    International Nuclear Information System (INIS)

    Wittmaack, K.

    1984-01-01

    The emission of positive and negative, atomic and molecular secondary ions sputtered from silicon has been studied under ultrahigh vacuum conditions. The sample was bombarded with 2-12 keV Ar + and Xe + ions at angles of incidence between 0 0 and 60 0 to the surface normal. The angular dependence of the secondary ion intensity as well as the energy spectra of Si + and Si - were found to differ significantly. The effect is attributed mostly do differences in the rate of neutralization. The stability of molecular ions appears to be independent of the charge state. Supporting evidence is provided for the idea that multiply charged secondary ions are due to Auger de-excitation of sputtered atoms in vacuum. (orig.)

  4. Experimental measurement of proton penetration in silicon

    International Nuclear Information System (INIS)

    Castaing, C.; Baruch, P.; Picard, C.

    1974-01-01

    After proton implantation in silicon at high fluence, hydrogen precipitation in bubbles is induced by annealing. The stresses are so high that blister formation and peeling occur, leaving flat bottomed pits, with a depth equal to the projected proton range R(p). In this way R(p) was measured between 200 and 600keV, and compared with already published values, and with values computed through LSS (Lindhard, Scharff, and Schiott) theory, using a correct electronic stopping power. A table of ranges and standard deviations, computed in this way is given. The agreement with experimental results is excellent [fr

  5. Simulations of Proton Implantation in Silicon Carbide (SiC)

    Science.gov (United States)

    2016-03-31

    Simulations of Proton Implantation in Silicon Carbide (SiC) Jonathan P. McCandless, Hailong Chen, Philip X.-L. Feng Electrical Engineering, Case...of implanting protons (hydrogen ions, H+) into SiC thin layers on silicon (Si) substrate, and explore the ion implantation conditions that are...relevant to experimental radiation of SiC layers. Keywords: silicon carbide (SiC); radiation effects; ion implantation ; proton; stopping and range of

  6. Systematic analysis of neutron yields from thick targets bombarded by heavy ions and protons with moving source model

    Energy Technology Data Exchange (ETDEWEB)

    Kato, Takashi; Kurosawa, Tadahiro; Nakamura, Takashi E-mail: nakamura@cyric.tohoku.ac.jp

    2002-03-21

    A simple phenomenological analysis using the moving source model has been performed on the neutron energy spectra produced by bombarding thick targets with high energy heavy ions which have been systematically measured at the Heavy-Ion Medical Accelerator (HIMAC) facility (located in Chiba, Japan) of the National Institute of Radiological Sciences (NIRS). For the bombardment of both heavy ions and protons in the energy region of 100-500 MeV per nucleon, the moving source model incorporating the knock-on process could be generally successful in reproducing the measured neutron spectra within a factor of two margin of accuracy. This phenomenological analytical equation is expressed having several parameters as functions of atomic number Z{sub p}, mass number A{sub p}, energy per nucleon E{sub p} for projectile, and atomic number Z{sub T}, mass number A{sub T} for target. By inputting these basic data for projectile and target into this equation we can easily estimate the secondary neutron energy spectra at an emission angle of 0-90 deg. for bombardment with heavy ions and protons in the aforementioned energy region. This method will be quite useful to estimate the neutron source term in the neutron shielding design of high energy proton and heavy ion accelerators.

  7. Proton irradiation effects in silicon devices

    Energy Technology Data Exchange (ETDEWEB)

    Simoen, E; Vanhellemont, J; Alaerts, A [IMEC, Leuven (Belgium); and others

    1997-03-01

    Proton irradiation effects in silicon devices are studied for components fabricated in various substrates in order to reveal possible hardening effects. The degradation of p-n junction diodes increases in first order proportionally with the fluence, when submitted to 10 MeV proton irradiations in the range 5x10{sup 9} cm{sup -2} to 5x10{sup 11} cm{sup -2}. The damage coefficients for both p- and n-type Czochralski, Float-Zone and epitaxial wafers are reported. Charge-Coupled Devices fabricated in a 1.2 {mu}m CCD-CMOS technology are shown to be quite resistant to 59 MeV H{sup +} irradiations, irrespective of the substrate type. (author)

  8. Doubly versus singly positively charged oxygen ions back-scattered from a silicon surface under dynamic O2+ bombardment

    International Nuclear Information System (INIS)

    Franzreb, Klaus; Williams, Peter; Loerincik, Jan; Sroubek, Zdenek

    2003-01-01

    Mass-resolved (and emission-charge-state-resolved) low-energy ion back-scattering during dynamic O 2 + bombardment of a silicon surface was applied in a Cameca IMS-3f secondary ion mass spectrometry (SIMS) instrument to determine the bombarding energy dependence of the ratio of back-scattered O 2+ versus O + . While the ratio of O 2+ versus O + drops significantly at reduced bombarding energies, O 2+ back-scattered from silicon was still detectable at an impact energy (in the lab frame) as low as about 1.6 keV per oxygen atom. Assuming neutralization prior to impact, O 2+ ion formation in an asymmetric 16 O→ 28 Si collision is expected to take place via 'collisional double ionization' (i.e. by promotion of two outer O 2p electrons) rather than by the production of an inner-shell (O 2s or O 1s) core hole followed by Auger-type de-excitation during or after ejection. A molecular orbital (MO) correlation diagram calculated for a binary 'head-on' O-Si collision supports this interpretation

  9. Low-energy ion bombardment to tailor the interfacial and mechanical properties of polycrystalline 3C-silicon carbide

    International Nuclear Information System (INIS)

    Liu Fang; Li, Carolina H.; Pisano, Albert P.; Carraro, Carlo; Maboudian, Roya

    2010-01-01

    Low-energy Ar + ion bombardment of polycrystalline 3C-silicon carbide (poly-SiC) films is found to be a promising surface modification method to tailor the mechanical and interfacial properties of poly-SiC. The film average stress decreases as the ion energy and the bombardment time increase. Furthermore, this treatment is found to change the strain gradient of the films from positive to negative values. The observed changes in stress and strain gradient are explained by ion peening and thermal spikes models. In addition, the poly-SiC films show a significant enhancement in corrosion resistance by this treatment, which is attributed to a reduction in surface energy and to an increase in the compressive stress in the near-surface region.

  10. Energy-dependent proton damage in silicon

    Energy Technology Data Exchange (ETDEWEB)

    Donegani, Elena Maria

    2017-09-29

    Non Ionizing Energy Loss (NIEL) in the sensor bulk is a limiting factor for the lifetime of silicon detectors. In this work, the proton-energy dependent bulkdamage is studied in n- and p-type silicon pad diodes. The samples are thin (200 μm thick), and oxygen enriched (bulk material types: MCz, standard or deepdiffused FZ). Irradiations are performed with 23 MeV, 188 MeV and 23 GeV protons; the 1 MeV neutron equivalent fluence assumes selected values in the range [0.1,3].10{sup 14} cm{sup -2}. In reverse bias, Current-Voltage (IV) and Capacitance-Voltage (CV) measurements are performed to electrically characterise the samples; in forward bias, IV and CV measurements point out the transition from lifetime to relaxationlike semiconductor after irradiation. By means of Thermally Stimulated Current (TSC) measurements, 13 bulk defects have been found after proton irradiation. Firstly, TSC spectra are analysed to obtain defect concentrations after defect filling at the conventional temperature T{sub fill} =10 K. Secondly, temperature dependent capture coefficients of bulk defects are explained, according to the multi-phonon process, from the analysis of TSC measurements at higher filling temperatures (T{sub fill}<130 K). Thirdly, a new method based on the SRH statistics and accounting for cluster-induced shift in activation energy is proposed; it allows to fully characterise bulk defects (in terms of activation energy, concentration and majority capture cross-section) and to distinguish between point- and cluster-like defects. A correlation is noted between the leakage current and the concentration of three deep defects (namely the V{sub 2}, V{sub 3} and H(220K) defects), for all the investigated bulk materials and types, and after all the considered proton energies and fluences. At least five defects are found to be responsible for the space charge, with positive contributions from the E(30K) and B{sub i}O{sub i} defects, or negative contributions from three deep

  11. Energy-dependent proton damage in silicon

    International Nuclear Information System (INIS)

    Donegani, Elena Maria

    2017-01-01

    Non Ionizing Energy Loss (NIEL) in the sensor bulk is a limiting factor for the lifetime of silicon detectors. In this work, the proton-energy dependent bulkdamage is studied in n- and p-type silicon pad diodes. The samples are thin (200 μm thick), and oxygen enriched (bulk material types: MCz, standard or deepdiffused FZ). Irradiations are performed with 23 MeV, 188 MeV and 23 GeV protons; the 1 MeV neutron equivalent fluence assumes selected values in the range [0.1,3].10 14 cm -2 . In reverse bias, Current-Voltage (IV) and Capacitance-Voltage (CV) measurements are performed to electrically characterise the samples; in forward bias, IV and CV measurements point out the transition from lifetime to relaxationlike semiconductor after irradiation. By means of Thermally Stimulated Current (TSC) measurements, 13 bulk defects have been found after proton irradiation. Firstly, TSC spectra are analysed to obtain defect concentrations after defect filling at the conventional temperature T fill =10 K. Secondly, temperature dependent capture coefficients of bulk defects are explained, according to the multi-phonon process, from the analysis of TSC measurements at higher filling temperatures (T fill <130 K). Thirdly, a new method based on the SRH statistics and accounting for cluster-induced shift in activation energy is proposed; it allows to fully characterise bulk defects (in terms of activation energy, concentration and majority capture cross-section) and to distinguish between point- and cluster-like defects. A correlation is noted between the leakage current and the concentration of three deep defects (namely the V 2 , V 3 and H(220K) defects), for all the investigated bulk materials and types, and after all the considered proton energies and fluences. At least five defects are found to be responsible for the space charge, with positive contributions from the E(30K) and B i O i defects, or negative contributions from three deep acceptors H(116K), H(140K) and H(152K).

  12. Measurements of Neutron Spectra Produced from a Thick Iron Target Bombarded with 1.5-GeV Protons

    International Nuclear Information System (INIS)

    Meigo, Shin-ichiro; Shigyo, Nobuhiro; Iga, Kiminori; Iwamoto, Yosuke; Kitsuki, Hirohiko; Ishibashi, Kenji; Maehata, Keisuke; Arima, Hidehiko; Nakamoto, Tatsushi; Numajiri, Masaharu

    2005-01-01

    For validation of calculation codes that are employed in the design of accelerator facilities, spectra of neutrons produced from a thick iron target bombarded with 1.5-GeV protons were measured. The calculated results with NMTC/JAM were compared with the present experimental results. It is found that the NMTC/JAM generally shows good agreement with experiment. Furthermore, the calculation gives good agreement with the experiment for the energy region 20 to 80 MeV for iron, whereas the NMTC/JAM gives 50% of the experimental data for the heavy-nuclides such as lead and tungsten

  13. Measurements of neutron spectra produced from a thick iron target bombarded with 1.5 GeV protons

    International Nuclear Information System (INIS)

    Meigo, Shin-ichiro; Takada, Hiroshi

    2001-01-01

    For validation of calculation codes which are employed in the design of accelerator facilities, spectra of neutrons produced from a thick iron target bombarded with 1.5-GeV protons were measured. The calculated results with NMTC/JAM were compared with the present experimental results. It is found the NMTC/JAM generally shows in good agreement with experiment. Furthermore, the calculation gives good agreement with the experiment for the energy region 20-80 MeV, whereas the NMTC/JAM gives 50% of the experimental data for the heavy nuclide target such as lead and tungsten target. (author)

  14. Measurement of induced radioactivity in a spallation neutron field of a mercury target for GeV-proton bombardment

    Energy Technology Data Exchange (ETDEWEB)

    Kasugai, Y.; Takada, H.; Nakashima, H. [Japan Atomic Energy Research Inst., Tokai, Ibaraki (Japan). Tokai Research Establishment] [and others

    2001-03-01

    An integral experiment on radioactivity induced in spallation neutron fields was carried out under the ASTE (AGS-Spallation Target Experiment) collaboration using AGS (Alternative Gradient Synchrotron) at BNL (Brookhaven National Laboratory). The spallation neutrons were produced by bombarding a mercury target with protons of 1.6, 12 and 24 GeV. The number of protons was 3 - 4 x 10{sup 13} for each irradiation. The irradiated materials were titanium, nickel, cobalt, yttrium, and bismuth, and placed on the cylindrical surface of the mercury target at the distance of 15 - 16 cm from the beam-incident-surface of the target. Disintegration rates of induced radioactivities were measured at several cooling-time ranging from hours to months. The principal nuclides contributing to the radioactivity were pointed out for each material. The experimental results for bismuth were compared with the calculations with DCAHIN-SP code. (author)

  15. Measurement of induced radioactivity in a spallation neutron field of a mercury target for GeV-proton bombardment

    International Nuclear Information System (INIS)

    Kasugai, Y.; Takada, H.; Nakashima, H.

    2001-01-01

    An integral experiment on radioactivity induced in spallation neutron fields was carried out under the ASTE (AGS-Spallation Target Experiment) collaboration using AGS (Alternative Gradient Synchrotron) at BNL (Brookhaven National Laboratory). The spallation neutrons were produced by bombarding a mercury target with protons of 1.6, 12 and 24 GeV. The number of protons was 3 - 4 x 10 13 for each irradiation. The irradiated materials were titanium, nickel, cobalt, yttrium, and bismuth, and placed on the cylindrical surface of the mercury target at the distance of 15 - 16 cm from the beam-incident-surface of the target. Disintegration rates of induced radioactivities were measured at several cooling-time ranging from hours to months. The principal nuclides contributing to the radioactivity were pointed out for each material. The experimental results for bismuth were compared with the calculations with DCAHIN-SP code. (author)

  16. Production of no-carrier-added 139Pr via precursor decay in the proton bombardment of natPr

    International Nuclear Information System (INIS)

    Steyn, G.F.; Vermeulen, C.; Nortier, F.M.; Szelecsenyi, F.; Kovacs, Z.; Qaim, S.M.

    2006-01-01

    Excitation functions and production rates are presented for various Pr and Nd radionuclides formed in the bombardment of Pr with protons, from their respective thresholds up to 100 MeV. The indirect production route 141 Pr(p, 3n) 139m Nd → 139 Pr is investigated as an alternative to the direct production route 140 Ce(p, 2n) 139 Pr for producing no-carrier-added 139 Pr of high radionuclidic purity. The simultaneous production of 139 Pr and 140 Nd using Pr as target is investigated. The advantages and disadvantages of both production routes are discussed. Experimental thick-target production rates are presented for selected Pr radionuclides formed in the bombardment of nat Ce with protons at incident energies of 20, 26 and 32 MeV. All the experimental excitation functions obtained in this work are compared with theoretical predictions by means of the geometry-dependent hybrid (GDH) model as implemented in the code ALICE-IPPE. The results of this work are also compared with previous literature experimental data, if available

  17. The crystalline-to-amorphous transition in ion-bombarded silicon

    International Nuclear Information System (INIS)

    Mueller, G.; Kalbitzer, S.

    1980-01-01

    Hydrogen-free, but defect-rich a-Si can be obtained by ion bombardment of c-Si. The formation of such material has been studied in detail using carrier-removal measurements in the characterization of the bombardment damage. In order to develop an overall view of the disordering process these data are discussed together with results obtained on similar films by Rutherford back-scattering, electron spin resonance, electron microscopy and optical measurements. It is concluded that amorphous material generally evolves from an intermediate crystalline phase supersaturated with point defects. The transition occurs locally at the sites of energetic ion impacts into critically predamaged crystalline material. As a consequence, an amorphous layer is built up from small clusters with dimensions typically of the order of 50 A. From the net expansion of the bombarded layers it is concluded that regions of lower atomic density are locally present, very likely a consequence of a structural mismatch between individual amorphous clusters. In this way a heterogeneous defect structure may build up in these films which determines their electronic properties. (author)

  18. Comparison of secondary ion emission induced in silicon oxide by MeV and KeV ion bombardment

    International Nuclear Information System (INIS)

    Allali, H.; Nsouli, B.; Thomas, J.P.; Szymczak, W.; Wittmaack, K.

    1993-09-01

    The surface and near-surface composition of SiO 2 layers, has been investigated by negative secondary ion emission mass spectrometry (SIMS) using MeV and KeV ion bombardment in combination with time-of-flight (TOF) mass analysis. The spectra recorded in the mass range 0-100 u are dominated by surface impurities, notably hydrocarbons and silicon polyanions incorporating H and OH entities. The characteristic (fragmentation) patterns are quite different for light and high-velocity ion impact. In high-velocity TOF-SIMS analysis of P-doped layers, prepared by chemical vapour deposition (CVD), the mass lines at 63 and 79 u are very prominent and appear to correlate with the phosphorus concentration (PO 2 and PO 3 , respectively). It is shown, however, that for unambiguous P analysis one has to use dynamic SIMS or high mass resolution. (author) 11 refs., 5 figs

  19. Measurements of neutron spectra produced from a thick tungsten target bombarded with 5 and 15 GeV protons

    CERN Document Server

    Meigo, S; Shigyo, N; Iga, K; Iwamoto, Y; Kitsuki, H; Ishibashi, K; Maehata, K; Arima, H; Nakamo, T; Numajiri, M

    2002-01-01

    For validation of calculation codes that are employed in the design of a pulse spallation neutron source and accelerator driven system, the spectrum of neutrons produced from a thick target plays an important role. However, appropriate experimental data were scarce for incident energies higher than 0.8 GeV. In this study, the spectrum from a thick tungsten target was measured. The experiment was carried out at the pi 2 beam line of the 12-GeV proton synchrotron at KEK. The tungsten target was bombarded by 0.5- and 1.5-GeV secondary protons. The spectrum of neutrons was measured by the time-of-flight technique using organic scintillators of NE213. The calculated result with NMTC/JAM and MCNP-4A is compared with the measured data. It is found that the NMTC/JAM generally gives a good agreement with experiment. The NMTC/JAM, however, gives 50% lower neutron flux in the energy region 20~80 MeV, which is consistent with the results in a previous comparison of a lead target. For the neutrons between 20 and 80 MeV, t...

  20. Measurement of activation reaction rate distributions in a lead assembly bombarded with 500-MeV protons

    CERN Document Server

    Takada, H; Sasa, T; Tsujimoto, K; Yasuda, H

    2000-01-01

    Reaction rate distributions of various activation detectors such as the /sup nat/Ni(n, x)/sup 58/Co, /sup 197/Au(n,2n)/sup 196/Au, and /sup 197/Au(n,4n)/sup 194/Au reactions were measured to study the production and the transport of spallation neutrons in a lead assembly bombarded with protons of 500 MeV. The measured data were analyzed with the nucleon-meson transport code NMTC/JAERI combined with the MCNP4A code using the nuclide production cross sections based on the JENDL Dosimetry File and those calculated with the ALICE-F code. It was found that the NMTC/JAERI-MCNP4A calculations agreed well with the experiments for the low-energy-threshold reaction of /sup nat/Ni(n, x)/sup 58/Co. With the increase of threshold energy, however, the calculation underestimated the experiments, especially above 20 MeV. The reason for the disagreement can be attributed to the underestimation of the neutron yield in the tens of mega-electron-volt regions by the NMTC/JAERI code. (32 refs).

  1. Secondary ion emission from metal surfaces bombarded by 0.5-10 keV protons and hydrogens

    International Nuclear Information System (INIS)

    Kitamura, Akira; Yano, Syukuro

    1978-01-01

    Secondary ion emission coefficients by bombardment of 0.5 - 10 keV protons K 11 and atomic hydrogens K 01 on copper, stainless steel, molybdenum and evaporated gold surfaces have been measured in a moderate vacuum. Results are summarized as follows; 1) There is no significant difference between K 11 and K 01 . 2) Differences in K 11 and K 11 between different samples of the same material and between the sample before baking-out and the same sample after baking-out are of the order of several tens of percent. 3) The incident particle energy E sub(max) at which K 11 and K 01 have the maximum value lies in the keV region, and increases with the target mass. According to the fact that E sub(max) differs substantially from the energy at which the elastic stopping power has the maximum value, a characteristic length l is introduced and calculated to be of the order of hundreds of A; the factor exp (-x/l) represents the degree of contribution of collision at depth x to K 11 or K 01 . (author)

  2. On the modeling of irradiation-induced homogeneous precipitation in proton-bombarded Ni-Si solid solutions

    Science.gov (United States)

    Lam, Nghi Q.; Janghorban, K.; Ardell, A. J.

    1981-10-01

    Irradiation-induced solute redistribution leading to precipitation of coherent γ' particles in undersaturated Ni-based solid solutions containing 6 and 8 at.% Si during 400-keV proton bombardment was modeled, based on the concept of solute segregation in concentrated alloys under spatially-dependent defect production conditions. The combined effects of (i) an extremely large difference between the defect production rates in the peak-damage and mid-range regions during irradiation and (ii) a preferential coupling between the interstitial and solute fluxes generate a net transient flux of Si atoms into the mid-range region, which is much larger than the solute flux out of this location. As a result, the Si concentration exceeds the solubility limit and homogeneous precipitation of the γ' phase occurs in this particular region of the irradiated samples. The spatial, compositional and temperature dependences of irradiation-induced homogeneous precipitation derived from the present theoretical calculations are in good qualitative agreement with experimental observations

  3. Influence of ion bombardment on microcrystalline silicon material quality and solar cell performances

    OpenAIRE

    Bugnon, G; Feltrin, A; Sculati-Meillaud, F; Bailat, J; Ballif, C

    2008-01-01

    Microcrystalline hydrogenated silicon growth with VHF-PECVD was examined in an industrial type parallel plate KAITM reactor. The influence of pressure on material quality was studied in single junction solar cells. Solar cells with their intrinsic layer prepared at higher pressures exhibit remarkable improvements, reaching 8.2% efficiency at 3.5 mbar. Further analyzes showed that μc- Si:H intrinsic layers grown at higher pressures have a significantly lower defect density. These results are a...

  4. Silicon nanodot formation and self-ordering under bombardment with heavy Bi3 ions

    International Nuclear Information System (INIS)

    Boettger, Roman; Heinig, Karl-Heinz; Bischoff, Lothar; Liedke, Bartosz; Huebner, Rene; Pilz, Wolfgang

    2013-01-01

    Si nanodots of high density and hexagonal short-range order are observed upon normal-incidence bombardment of hot, crystalline Si with Bi 3 + ions having a kinetic energy of a few tens of keV. The heights of nanodots are comparable to their widths of ∝20 nm. The implanted Bi accumulates in tiny Bi nanocrystals in a thin Si top layer which is amorphous due to implantation damage. Light and heavy ions up to Xe cause smoothing of surfaces, but Bi 3 + ions considered here have a much higher mass. Atomistic simulations prove that each Bi 3 + impact deposits an extremely high energy density resulting in a several nanometer large melt pool, which resolidifies within a few hundreds of picoseconds. Experiments confirm that dot patterns form only if the deposited energy density exceeds the threshold for melting. Comparing monatomic and polyatomic Bi ion irradiation, Bi-Si phase separation and preferential ion erosion are ruled out as driving forces of pattern formation. A model based on capillary forces in the melt pool explains the pattern formation consistently. High-density Si nanodots are formed by polyatomic Bi ion irradiation of hot Si surfaces. Each impact causes local transient melt pools smaller than the dots. Hexagonally ordered patterns evolve by self-organization driven by repeated ion-induced melting of tiny volumes. Homogeneously distributed Bi nanocrystals are found in the a-Si film. These nanocrystals are related to particularities of the Si-Bi phase diagram. (copyright 2013 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  5. Silicon/HfO2 interface: Effects of proton irradiation

    International Nuclear Information System (INIS)

    Maurya, Savita; Radhakrishna, M.

    2015-01-01

    Substrate oxide interfaces are of paramount importance in deciding the quality of the semiconductor devices. In this work we have studied how 200 keV proton irradiation affects the interface of a 13 nm thick, atomic layer deposited hafnium dioxide on silicon substrate. Pre- and post-irradiation electrical measurements are used to quantify the effect of proton irradiation for varying electrode geometries. Proton irradiation introduces positive charge in the oxide and at the interface of Si/HfO 2 interface. The gate current is not very much affected under positive injection since the induced positive charge is compensated by the injected electrons. Current voltage characteristics under negative bias get affected by the proton irradiation

  6. Origin of Si(LMM) Auger Electron Emission from Silicon and Si-Alloys by keV Ar+ Ion Bombardment

    Science.gov (United States)

    Iwami, Motohiro; Kim, Su Chol; Kataoka, Yoshihide; Imura, Takeshi; Hiraki, Akio; Fujimoto, Fuminori

    1980-09-01

    Si(LMM) Auger electrons emitted from specimens of pure silicon and several Si-alloys (Ni-Si, Pd-Si and Cu-Si) under keV Ar+ ion bombardment, were examined. In the Auger spectra from all specimens studied there were four peaks at energies of 92, 86, 76 and 66 eV. The Auger signal intensity varied considerably with both the incident angle and the energy of the primary ion beam. It is proposed that the Auger electrons are emitted from silicon atoms (or ions) just beneath the specimen surface but free from the bulk network.

  7. Origin of Si(LMM) Auger electron emission from silicon and Si-alloys by keV Ar/sup +/ ion bombardment

    Energy Technology Data Exchange (ETDEWEB)

    Iwami, M; Kim, S; Kataoka, Y; Imura, T; Hiraki, A [Osaka Univ., Suita (Japan). Faculty of Engineering

    1980-09-01

    Si(LMM) Auger electrons emitted from specimens of pure silicon and several Si-alloys (Ni-Si, Pd-Si and Cu-Si) under keV Ar/sup +/ ion bombardment, were examined. In the Auger spectra from all specimens studied there were four peaks at energies of 92, 86, 76 and 66 eV. The Auger signal intensity varied considerably with both the incident angle and the energy of the primary ion beam. It is proposed that the Auger electrons are emitted from silicon atoms (or ions) just beneath the specimen surface but free from the bulk network.

  8. Low-energy oxygen bombardment of silicon by MD simulations making use of a reactive force field

    International Nuclear Information System (INIS)

    Philipp, P.; Briquet, L.; Wirtz, T.; Kieffer, J.

    2011-01-01

    In the field of Secondary Ion Mass Spectrometry (SIMS), ion-matter interactions have been largely investigated by numerical simulations. For MD simulations related to inorganic samples, mostly classical force fields assuming stable bonding structure have been used. In materials science, level-three force fields capable of simulating the breaking and formation of chemical bonds have recently been conceived. One such force field has been developed by John Kieffer . This potential includes directional covalent bonds, Coulomb and dipolar interaction terms, dispersion terms, etc. Important features of this force field for simulating systems that undergo significant structural reorganization are (i) the ability to account for the redistribution of electron density upon ionization, formation, or breaking of bonds, through a charge transfer term, and (ii) the fact that the angular constraints dynamically adjust when a change in the coordination number of an atom occurs. In this paper, the modification of the force field to allow for an exact description of the sputtering process, the influence of this modification on previous results obtained for phase transitions in glasses as well as properties of particles sputtered at 250-1000 eV from a mono-crystalline silicon sample will be presented. The simulation results agree qualitatively with predictions from experiments or models. Most atoms are sputtered from the first monolayer: for an impact energy of 250 eV up to 86% of the atoms are sputtered from the first monolayer and for 750 eV, this percentage drops to 61%, with 89% of the atoms being sputtered from the first two monolayers. For sputtering yields, 250 and 500 eV results agree with experimental data, but for 750 eV sub-channelling in the pristine sample becomes more important than in experiments where samples turn amorphous under ion bombardment.

  9. A new silicon tracker for proton imaging and dosimetry

    Energy Technology Data Exchange (ETDEWEB)

    Taylor, J.T., E-mail: jtaylor@hep.ph.liv.ac.uk [Department of Physics, University of Liverpool, Oxford Street, Liverpool L69 7ZE (United Kingdom); Waltham, C. [Laboratory of Vision Engineering, School of Computer Science, University of Lincoln, Lincoln LN6 7TS (United Kingdom); Price, T. [School of Physics and Astronomy, University of Birmingham, Birmingham B25 2TT (United Kingdom); Allinson, N.M. [Laboratory of Vision Engineering, School of Computer Science, University of Lincoln, Lincoln LN6 7TS (United Kingdom); Allport, P.P. [School of Physics and Astronomy, University of Birmingham, Birmingham B25 2TT (United Kingdom); Casse, G.L. [Department of Physics, University of Liverpool, Oxford Street, Liverpool L69 7ZE (United Kingdom); Kacperek, A. [Douglas Cyclotron, The Clatterbridge Cancer Centre NHS Foundation Trust, Clatterbridge Road, Bebington, Wirral CH63 4JY (United Kingdom); Manger, S. [Department of Physics, University of Warwick, Coventry CV4 7AL (United Kingdom); Smith, N.A.; Tsurin, I. [Department of Physics, University of Liverpool, Oxford Street, Liverpool L69 7ZE (United Kingdom)

    2016-09-21

    For many years, silicon micro-strip detectors have been successfully used as tracking detectors for particle and nuclear physics experiments. A new application of this technology is to the field of particle therapy where radiotherapy is carried out by use of charged particles such as protons or carbon ions. Such a treatment has been shown to have advantages over standard x-ray radiotherapy and as a result of this, many new centres offering particle therapy are currently under construction around the world today. The Proton Radiotherapy, Verification and Dosimetry Applications (PRaVDA) consortium are developing instrumentation for particle therapy based upon technology from high-energy physics. The characteristics of a new silicon micro-strip tracker for particle therapy will be presented. The array uses specifically designed, large area sensors with technology choices that follow closely those taken for the ATLAS experiment at the HL-LHC. These detectors will be arranged into four units each with three layers in an x–u–v configuration to be suitable for fast proton tracking with minimal ambiguities. The sensors will form a tracker capable of tracing the path of ~200 MeV protons entering and exiting a patient allowing a new mode of imaging known as proton computed tomography (pCT). This will aid the accurate delivery of treatment doses and in addition, the tracker will also be used to monitor the beam profile and total dose delivered during the high fluences used for treatment. We present here details of the design, construction and assembly of one of the four units that will make up the complete tracker along with its characterisation using radiation tests carried out using a {sup 90}Sr source in the laboratory and a 60 MeV proton beam at the Clatterbridge Cancer Centre.

  10. Experimental study on neutronics in bombardment of thick targets by high energy proton beams for accelerator-driven sub-critical system

    CERN Document Server

    Guo Shi Lun; Shi Yong Qian; Shen Qing Biao; Wan Jun Sheng; Brandt, R; Vater, P; Kulakov, B A; Krivopustov, M I; Sosnin, A N

    2002-01-01

    The experimental study on neutronics in the target region of accelerator-driven sub-critical system is carried out by using the high energy accelerator in Joint Institute for Nuclear Research, Dubna, Russia. The experiments with targets U(Pb), Pb and Hg bombarded by 0.533, 1.0, 3.7 and 7.4 GeV proton beams show that the neutron yield ratio of U(Pb) to Hg and Pb to Hg targets is (2.10 +- 0.10) and (1.76 +- 0.33), respectively. Hg target is disadvantageous to U(Pb) and Pb targets to get more neutrons. Neutron yield drops along 20 cm thick targets as the thickness penetrated by protons increases. The lower the energy of protons, the steeper the neutron yield drops. In order to get more uniform field of neutrons in the targets, the energy of protons from accelerators should not be lower than 1 GeV. The spectra of secondary neutrons produced by different energies of protons are similar, but the proportion of neutrons with higher energy gradually increases as the proton energy increases

  11. A simulation of low energy channeling of protons in silicon

    International Nuclear Information System (INIS)

    Sabin, J.R.

    1994-01-01

    The authors present early results from the CHANNEL code, which simulates the passage of ionized projectiles through bulk solids. CHANNEL solves the classical equations of motion for the projectile using the force obtained from the gradient of the quantum mechanically derived coulombic potential of the solid (determined via a full potential augmented plane wave FLAPW calculation on the bulk) and a quantum mechanical energy dissipation term, the stopping power, as determined from the local electron density, using the method of Echenique, Nieminen, and Ritchie. The code then generates the trajectory of the ionic projectile for a given initial velocity and a given incident position on the unit cell face. For each incident projectile velocity, the authors generate trajectories for incidence distributed over the channel face. The distribution of ranges generates an implantation profile. In this paper, they report ion (proton) implantation profiles for low energy protons with initial velocity along the (100) and (110) channel directions of diamond structured Silicon

  12. Effect of 200 keV proton irradiation on the properties of methyl silicone rubber

    International Nuclear Information System (INIS)

    Zhang Lixin; Xu Zhou; Wei Qiang; He Shiyu

    2006-01-01

    The effects of 200 keV proton irradiation on methyl silicone rubber were studied. The changes in surface morphology, mechanical properties, cross-linking density, glass transition temperature, infrared attenuated total reflection spectrum and mass spectrum indicated that, at lower fluence, the proton irradiation induced cross-linking, resulting in an increase in tensile strength and hardness of the methyl silicone rubber. However, at higher proton fluence, radiation-induced degradation, which decreased the tensile strength and hardness, became dominant. A macromolecular-network destruction model for silicone rubber irradiated with protons was proposed

  13. Anomalous time-of-flight distributions observed for argon implanted in silicon and resputtered by Ar+-ion bombardment

    International Nuclear Information System (INIS)

    van Veen, G.N.A.; Sanders, F.H.M.; Dieleman, J.; van Veen, A.; Oostra, D.J.; de Vries, A.E.

    1986-01-01

    A Si substrate is bombarded by 3-keV Ar + ions. From time-of-flight spectra of resputtered Ar neutrals at various target temperatures, we conclude that Ar-bubble formation takes place in the amorphized-Si top layer. The bubbles form and open during etching. The average kinetic energy of the Ar atoms is in agreement with the calculated average potential energy of the Ar atoms inside the bubbles

  14. Simulation of the proton implantation process in silicon

    Energy Technology Data Exchange (ETDEWEB)

    Faccinelli, Martin; Hadley, Peter [Graz University of Technology, Institute of Solid State Physics (Austria); Jelinek, Moriz; Wuebben, Thomas [Infineon Technologies Austria AG, Villach (Austria); Laven, Johannes G.; Schulze, Hans-Joachim [Infineon Technologies AG, Neubiberg (Germany)

    2016-12-15

    Proton implantation is one of many processes used to ad-just the electronic and mechanical properties of silicon. Though the process has been extensively studied, it is still not clear which exact defects are formed and what their concentration profiles are. In this article, a simulation method is presented, which provides a better understanding of the implantation process. The simulation takes into account the diffusion of mobile point defects and their reactions to defect complexes, as well as the dissociation of defect complexes. Concentration profiles for a set of defect complexes after an implantation at 400 keV and a dose of 5 x 10{sup 14} H{sup +}cm{sup -2} are presented. (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  15. Determination of intensity and energy spectrum of neutrons by bombardment of thallium-203 thick target and its copper substrate with 28.5 MeV protons

    International Nuclear Information System (INIS)

    Hajiloo, N.; Raisali, Gh.; Hamidi, S.; Aslani, Gh.

    2007-01-01

    In this research we have determined neutrons spectrum and the intensity that produced from thallium target bombardment. We have applied SRIM and ALICE computer codes to thallium target and its copper substrate for 145 μA of 28.5 MeV incident proton beam from cyclotron Cyclone30. Because of the energy degradation of protons while passing through the thallium target and its copper substrate, the average energy of protons in different depths has been calculated by using SRIM computer code. Then, by applying ALICE computer code for each sub-layer, the neutron production cross sections and their energy spectrum have been calculated to determine the total neutron intensity and spectrum. Using the calculated neutron intensity of 1.22x10 13 n/s as the source, the equivalent dose rate at the distance 6 meters from the target has been calculated by MCNP computer code and the result has been compared with the measured value. The Pb 201 activity has also been calculated as 13.5 Curies. The measured Pb 201 activity by Curie meter CAPINTEC CRC-712 is 13.1 Ci which is in reasonable agreement with the calculated value, bearing in mind the uncertainties in the proposed models and the measurements

  16. Measurements of spallation neutrons from a thick lead target bombarded with 0.5 and 1.5 GeV protons

    Energy Technology Data Exchange (ETDEWEB)

    Meigo, Shin-ichiro; Takada, Hiroshi; Chiba, Satoshi [Japan Atomic Energy Research Inst., Tokai, Ibaraki (Japan). Tokai Research Establishment] [and others

    1997-03-01

    Double differential neutron spectra from a thick lead target bombarded with 0.5 and 1.5 GeV protons have been measured with the time-of-flight technique. In order to obtain the neutron spectra without the effect of the flight time fluctuation by neutron scattering in the target, an unfolding technique has also been employed in the low energy region below 3 MeV. The measured data have been compared with the calculated results of NMTC/JAERI-MCNP-4A code system. It has been found that the code system gives about 50 % lower neutron yield than the experimental ones in the energy region between 20 and 80 MeV for both incident energies. The disagreements, however, have been improved well by taking account of the inmedium nucleon-nucleon scattering cross sections in the NMTC/JAERI code. (author)

  17. Radiation damage in silicon exposed to high-energy protons

    International Nuclear Information System (INIS)

    Davies, Gordon; Hayama, Shusaku; Murin, Leonid; Krause-Rehberg, Reinhard; Bondarenko, Vladimir; Sengupta, Asmita; Davia, Cinzia; Karpenko, Anna

    2006-01-01

    Photoluminescence, infrared absorption, positron annihilation, and deep-level transient spectroscopy (DLTS) have been used to investigate the radiation damage produced by 24 GeV/c protons in crystalline silicon. The irradiation doses and the concentrations of carbon and oxygen in the samples have been chosen to monitor the mobility of the damage products. Single vacancies (and self-interstitials) are introduced at the rate of ∼1 cm -1 , and divacancies at 0.5 cm -1 . Stable di-interstitials are formed when two self-interstitials are displaced in one damage event, and they are mobile at room temperature. In the initial stages of annealing the evolution of the point defects can be understood mainly in terms of trapping at the impurities. However, the positron signal shows that about two orders of magnitude more vacancies are produced by the protons than are detected in the point defects. Damage clusters exist, and are largely removed by annealing at 700 to 800 K, when there is an associated loss of broad band emission between 850 and 1000 meV. The well-known W center is generated by restructuring within clusters, with a range of activation energies of about 1.3 to 1.6 eV, reflecting the disordered nature of the clusters. Comparison of the formation of the X centers in oxygenated and oxygen-lean samples suggests that the J defect may be interstitial related rather than vacancy related. To a large extent, the damage and annealing behavior may be factorized into point defects (monitored by sharp-line optical spectra and DLTS) and cluster defects (monitored by positron annihilation and broadband luminescence). Taking this view to the limit, the generation rates for the point defects are as predicted by simply taking the damage generated by the Coulomb interaction of the protons and Si nuclei

  18. Analysis of the AGS experiment on a mercury target with a moderator and a lead reflector bombarded by GeV energy protons

    International Nuclear Information System (INIS)

    Maekawa, Fujio; Meigo, Shin-ichiro; Kasugai, Yoshimi; Takada, Hiroshi; Ikeda, Yujiro; Ino, Takashi; Sato, Setsuo

    2001-01-01

    The AGS experiment on a mercury target with a moderator and a lead reflector bombarded by GeV energy protons was analyzed to investigate prediction capability of Monte Carlo simulation codes used in neutronic designs of spallation neutron sources. The NMTC/JAM code was used for nucleon meson transport calculations above 20 MeV while the MCNP-4A code with the JENDL cross section library was used for neutron transport below 20 MeV. The MCNPX code with the LA-150 library was also used for a reference. The calculations were compared with the experimental data obtained with 1.94, 12 and 24 GeV proton beams: (1) neutron flux distributions along the mercury target and (2) spectral fluxes of thermal neutrons extracted from a light water moderator. As a result, it was found that all the calculations predicted these experimental results with accuracies better than ±50% in absolute values. Accordingly, it was concluded that these calculation codes were adequate for neutronics designs of spallation neutron sources. (author)

  19. Measurements of neutron spectra produced from a thick tungsten target bombarded with 0.5- and 1.5-GeV protons

    International Nuclear Information System (INIS)

    Meigo, Shin-ichiro; Takada, Hiroshi

    2002-01-01

    For validation of calculation codes that are employed in the design of pulse spallation neutron source and accelerator driven system, spectrum of neutrons produced from a thick target plays an important role. However, appropriate experimental data were scarce for the incident energies higher than 0.8 GeV. In this study, the spectrum from a thick tungsten target was measured. The experiment was carried out at the π2 beam line of the 12-GeV proton synchrotron at KEK. The tungsten target was bombarded by the 0.5- and 1.5-GeV secondary protons. Spectrum of neutrons was measured by the time-of-flight technique using organic scintillators of NE213. The calculated result with NMTC/JAM and MCNP-4A is compared with the measured data. It is found that the NMTC/JAM generally gives a good agreement with experiment. The NMTC/JAM, however, gives 50% lower neutron flux in the energy region 20∼80 MeV, which is consistent with the results in previous comparison of lead target. For the neutrons between 20 and 80 MeV, the calculation using with the in-medium nucleon-nucleon cross sections reproduced the experiment fairly well. (author)

  20. Differential production cross sections for charged particles produced by 590 MeV proton bombardment of thin metal targets

    International Nuclear Information System (INIS)

    Howe, S.D.; Cierjacks, S.; Hino, Y.; Raupp, F.; Rainbow, M.T.; Swinhoe, M.T.; Buth, L.

    1981-01-01

    Differential production cross sections have been measured for the reactions (p,p), (p,d), (p,t) and (p,π+-) using the 590 MeV proton beam at SIN. Here we report measurements made on thin targets of aluminium, niobium, lead, and uranium at laboratory angles of 90 0 and 157 0 . The data were taken over a proton energy range of about 50 MeV to 590 MeV. Differential cross sections are reported along with predictions by the intranuclear-cascade/evaporation model as computed by HETC. (orig.)

  1. Proton irradiation effects of amorphous silicon solar cell for solar power satellite

    Energy Technology Data Exchange (ETDEWEB)

    Morita, Yousuke; Oshima, Takeshi [Japan Atomic Energy Research Inst., Takasaki, Gunma (Japan). Takasaki Radiation Chemistry Research Establishment; Sasaki, Susumu; Kuroda, Hideo; Ushirokawa, Akio

    1997-03-01

    Flexible amorphous silicon(fa-Si) solar cell module, a thin film type, is regarded as a realistic power generator for solar power satellite. The radiation resistance of fa-Si cells was investigated by the irradiations of 3,4 and 10 MeV protons. The hydrogen gas treatment of the irradiated fa-Si cells was also studied. The fa-Si cell shows high radiation resistance for proton irradiations, compared with a crystalline silicon solar cell. (author)

  2. Hydrogenated amorphous silicon thin film anode for proton conducting batteries

    Science.gov (United States)

    Meng, Tiejun; Young, Kwo; Beglau, David; Yan, Shuli; Zeng, Peng; Cheng, Mark Ming-Cheng

    2016-01-01

    Hydrogenated amorphous Si (a-Si:H) thin films deposited by chemical vapor deposition were used as anode in a non-conventional nickel metal hydride battery using a proton-conducting ionic liquid based non-aqueous electrolyte instead of alkaline solution for the first time, which showed a high specific discharge capacity of 1418 mAh g-1 for the 38th cycle and retained 707 mAh g-1 after 500 cycles. A maximum discharge capacity of 3635 mAh g-1 was obtained at a lower discharge rate, 510 mA g-1. This electrochemical discharge capacity is equivalent to about 3.8 hydrogen atoms stored in each silicon atom. Cyclic voltammogram showed an improved stability 300 mV below the hydrogen evolution potential. Both Raman spectroscopy and Fourier transform infrared spectroscopy studies showed no difference to the pre-existing covalent Si-H bond after electrochemical cycling and charging, indicating a non-covalent nature of the Si-H bonding contributing to the reversible hydrogen storage of the current material. Another a-Si:H thin film was prepared by an rf-sputtering deposition followed by an ex-situ hydrogenation, which showed a discharge capacity of 2377 mAh g-1.

  3. Production and Extraction of [10C]-CO2 From Proton Bombardment of Molten 10B2O3

    International Nuclear Information System (INIS)

    Schueller, M.J.; Nickles, R.J.; Roberts, A.D.; Jensen, M.

    2003-01-01

    This work describes the production of 10C (t (1/2) = 19 s) from an enriched 10B2O3 target using a CTI RDS-112 11 MeV proton cyclotron. Proton beam heating is used to raise the target to a molten state (∼ 1300 deg. C), enabling the activity to diffuse to the surface of the melt. An infrared thermocouple monitors the melt temperature. Helium sweep gas then transports the activity to flow-through chemistry processing for human inhalation of 10CO2 for blood flow imaging with Positron Emission Tomography. The temperature-related diffusion of activity out of the white-hot molten glass target is discussed

  4. Measurements of activation reaction rate distributions on a mercury target bombarded with high-energy protons at AGS

    Energy Technology Data Exchange (ETDEWEB)

    Takada, Hiroshi; Kasugai, Yoshimi; Nakashima, Hiroshi; Ikeda, Yujiro [Japan Atomic Energy Research Inst., Tokai, Ibaraki (Japan). Tokai Research Establishment; Ino, Takashi; Kawai, Masayoshi [High Energy Accelerator Research Organization, Tsukuba, Ibaraki (Japan); Jerde, Eric; Glasgow, David [Oak Ridge National Laboratory, Oak Ridge, TN (United States)

    2000-02-01

    A neutronics experiment was carried out using a thick mercury target at the Alternating Gradient Synchrotron (AGS) facility of Brookhaven National Laboratory in a framework of the ASTE (AGS Spallation Target Experiment) collaboration. Reaction rate distributions around the target were measured by the activation technique at incident proton energies of 1.6, 12 and 24 GeV. Various activation detectors such as the {sup 115}In(n,n'){sup 115m}In, {sup 93}Nb(n,2n){sup 92m}Nb, and {sup 209}Bi(n,xn) reactions with threshold energies ranging from 0.3 to 70.5 MeV were employed to obtain the reaction rate data for estimating spallation source neutron characteristics of the mercury target. It was found from the measured {sup 115}In(n,n'){sup 115m}In reaction rate distribution that the number of leakage neutrons becomes maximum at about 11 cm from the top of hemisphere of the mercury target for the 1.6-GeV proton incidence and the peak position moves towards forward direction with increase of the incident proton energy. The similar result was observed in the reaction rate distributions of other activation detectors. The experimental procedures and a full set of experimental data in numerical form are summarized in this report. (author)

  5. Measurements of activation reaction rate distributions on a mercury target bombarded with high-energy protons at AGS

    International Nuclear Information System (INIS)

    Takada, Hiroshi; Kasugai, Yoshimi; Nakashima, Hiroshi; Ikeda, Yujiro; Jerde, Eric; Glasgow, David

    2000-02-01

    A neutronics experiment was carried out using a thick mercury target at the Alternating Gradient Synchrotron (AGS) facility of Brookhaven National Laboratory in a framework of the ASTE (AGS Spallation Target Experiment) collaboration. Reaction rate distributions around the target were measured by the activation technique at incident proton energies of 1.6, 12 and 24 GeV. Various activation detectors such as the 115 In(n,n') 115m In, 93 Nb(n,2n) 92m Nb, and 209 Bi(n,xn) reactions with threshold energies ranging from 0.3 to 70.5 MeV were employed to obtain the reaction rate data for estimating spallation source neutron characteristics of the mercury target. It was found from the measured 115 In(n,n') 115m In reaction rate distribution that the number of leakage neutrons becomes maximum at about 11 cm from the top of hemisphere of the mercury target for the 1.6-GeV proton incidence and the peak position moves towards forward direction with increase of the incident proton energy. The similar result was observed in the reaction rate distributions of other activation detectors. The experimental procedures and a full set of experimental data in numerical form are summarized in this report. (author)

  6. Damage effects and mechanisms of proton irradiation on methyl silicone rubber

    International Nuclear Information System (INIS)

    Zhang, L.X.; He, Sh.Y.; Xu, Zh.; Wei, Q.

    2004-01-01

    A study was performed on the damage effects and mechanisms of proton irradiation with 150 keV energy to space-grade methyl silicone rubber. The changes in surface morphology, mechanical properties, infrared attenuated total reflection (ATR) spectrum, mass spectrum and pyrolysis gas chromatography-mass spectrum (PYGC-MS) indicated that, under lower fluence, the proton radiation would induce cross-linking effect, resulting in an increase in tensile strengths and hardness of the methyl silicon rubber. However, under higher proton fluence, the radiation-induced degradation, which decreased the tensile strengths and hardness, became a dominant effect. A macromolecular-network destruction model for the silicone rubber radiated with the protons was proposed

  7. Radiation damage in proton-irradiated epitaxial silicon detectors

    International Nuclear Information System (INIS)

    Lange, Joern

    2009-07-01

    In this work radiation hardness of 75 μm, 100 μm and 150 μm thick epitaxial silicon pad diodes of both standard and oxygenated material was investigated. Damage after 24 GeV/c proton irradiation in a 1MeV neutron equivalent fluence range between 10 14 cm -2 and 10 16 cm -2 was studied and isothermal annealing experiments at 80 C were carried out. Standard CV/IV measurements could be performed up to 4 x 10 15 cm -2 . The volume-normalised reverse current was found to increase linearly with fluence with a slope independent of the thickness and impurity concentration. However, due to large fluctuations the fluences had to be renormalised using the current-related damage parameter. Concerning the depletion voltage, nearly all materials remained at a moderate level up to 4 x 10 15 cm -2 . During short-term annealing acceptors annealed out, whereas others were introduced during the long-term annealing. The stable damage was characterised by donor removal at low fluences and fluence-proportional predominant donor introduction for highly irradiated diodes, depending on the oxygen level. No type inversion was observed. Time-resolved measurements with a new 670 nm laser-TCT setup made the determination of the trapping time constant with the charge correction method possible. The results agreed with expectations and showed a linear increase of trapping probability with fluence. The electric field exhibited a double peak structure in highly irradiated diodes. Charge collection efficiency measurements with α-particles were independent of oxygen concentration, but showed an improved efficiency for thinner diodes. A comparison to simulation revealed systematic discrepancies. A non-constant trapping time parameter was proposed as possible solution. (orig.)

  8. Radiation damage in proton-irradiated epitaxial silicon detectors

    Energy Technology Data Exchange (ETDEWEB)

    Lange, Joern

    2009-07-15

    In this work radiation hardness of 75 {mu}m, 100 {mu}m and 150 {mu}m thick epitaxial silicon pad diodes of both standard and oxygenated material was investigated. Damage after 24 GeV/c proton irradiation in a 1MeV neutron equivalent fluence range between 10{sup 14} cm{sup -2} and 10{sup 16} cm{sup -2} was studied and isothermal annealing experiments at 80 C were carried out. Standard CV/IV measurements could be performed up to 4 x 10{sup 15} cm{sup -2}. The volume-normalised reverse current was found to increase linearly with fluence with a slope independent of the thickness and impurity concentration. However, due to large fluctuations the fluences had to be renormalised using the current-related damage parameter. Concerning the depletion voltage, nearly all materials remained at a moderate level up to 4 x 10{sup 15} cm{sup -2}. During short-term annealing acceptors annealed out, whereas others were introduced during the long-term annealing. The stable damage was characterised by donor removal at low fluences and fluence-proportional predominant donor introduction for highly irradiated diodes, depending on the oxygen level. No type inversion was observed. Time-resolved measurements with a new 670 nm laser-TCT setup made the determination of the trapping time constant with the charge correction method possible. The results agreed with expectations and showed a linear increase of trapping probability with fluence. The electric field exhibited a double peak structure in highly irradiated diodes. Charge collection efficiency measurements with {alpha}-particles were independent of oxygen concentration, but showed an improved efficiency for thinner diodes. A comparison to simulation revealed systematic discrepancies. A non-constant trapping time parameter was proposed as possible solution. (orig.)

  9. Pion production from deuterium by the bombardment with polarized protons of 277 and 500 MeV

    International Nuclear Information System (INIS)

    Lolos, G.J.; Auld, E.G.; Giles, G.; Jones, G.; McParland, B.; Ottewell, D.; Walden, P.L.; Zeigler, W.

    1982-11-01

    Analyzing power measurements of the (anti) pd → tπ + reaction are reported at incident proton energies of 277 and 500 MeV. The 277 MeV results span the angular range from 70 0 to 130 0 in the centre of mass while the two 500 MeV measurements at large angles were taken as a check of published results. With the angular distribution of the analyzing power at 277 MeV being now available, an examination of the energy dependence of the analyzing power shows that it exhibits characteristics closely resembling the shape and magnitude of the distribution observed for nuclei in the 9-12 mass range

  10. Experimental determination of the energy loss of protons channeled along the axis thorough a silicon single crystal

    International Nuclear Information System (INIS)

    Kopta, S.; Hajduk, R.; Lekki, J.; Rajchel, B.; Hrynkiewicz, A.Z.

    1988-01-01

    Interpretation of the spectra obtained by proton bombardment of Si monocrystal in random and aligned directions has been presented. By the fitting technique applied in the region of resonant backscattering cross section the ratio of channeled to random stopping power has been determined to be β 0 = 0.46 -0.03 +0.02 . 13 refs., 4 figs. (author)

  11. Simultaneous electron-proton irradiation of crucible grown and float-zone silicon solar cells

    International Nuclear Information System (INIS)

    Bernard, J.

    1974-01-01

    The realisation of an irradiation chamber which permits simultaneous irradiations by electrons, protons, photons and in-situ measurements of solar cells main parameters (diffusion length, I.V. characteristics) is described. Results obtained on 20 solar cells n/p 10Ωcm made in silicon pulled crystals and 20 solar cells n/p 10Ωcm made in silicon float-zone simultaneously irradiated with electrons and photons are given [fr

  12. Scanning of irradiated silicon detectors using $\\alpha$ particles and low energy protons

    CERN Document Server

    Casse, G L; Glaser, M; Kohout, Z; Konícek, J; Lemeilleur, F; Leroy, C; Linhart, V; Mares, J J; Pospísil, S; Roy, P; Sopko, B; Sinor, M; Svejda, J; Vorobel, V; Wilhelm, I

    1999-01-01

    In a spectroscopic study of non-irradiated and proton-irradiated silicon diodes, the detectors were illuminated from the front side and from the rear side by various alpha particle sources (mainly ThC') and by monoenergetic protons with energies from 1.0 to 2.5~MeV. Their response characteristics have been studied as a function of the incoming particle energy and the applied bias voltage. The charge collection efficiency was determined as a function of fluence

  13. Using short silicon crystals for beam extraction and collimation at U-70 proton synchrotron

    International Nuclear Information System (INIS)

    Afonin, A.G.; Baranov, V.T.; Biryukov, V.M.; Kotov, V.I.; Maisheev, V.A.; Terekhov, V.I.; Troyanov, E.F.; Fedotov, Yu.S.; Chepegin, V.N.; Chesnonkov, Yu.A.

    2002-01-01

    Results of investigations into escape and collimation of proton beams at the IHEP U-70 synchrotron with the application of short flexed silicon monocrystals in length 2 - 4 mm are demonstrated. Good agreement between the measured and calculated efficiency of the flexed crystal is available. Lowering efficiency with the decreasing proton energy is explained by growth of root-mean-square angle of the multiple Coulomb scattering and drop of dechanneling length [ru

  14. Observation of Multiple Volume Reflection of Ultrarelativistic Protons by a Sequence of Several Bent Silicon Crystals

    CERN Document Server

    Scandale, Walter; Baricordi, S; Dalpiaz, P; Fiorini, M; Guidi, V; Mazzolari, A; Della Mea, G; Milan, R; Ambrosi, G; Zuccon, P; Bertucci, B; Bürger, W; Duranti, M; Cavoto, G; Santacesaria, R; Valente, P; Luci, C; Iacoangeli, F; Vallazza, E; Afonin, A G; Chesnokov, Yu A; Kotov, V I; Maisheev, V A; Yazynin, I A; Kovalenko, A D; Taratin, A M; Denisov, A S; Gavrikov, Y A; Ivanov, Yu M; Lapina, L P; Malyarenko, L G; Skorogobogatov, V V; Suvorov, V M; Vavilov, S A; Bolognini, D; Hasan, S; Mozzanica, A; Prest, M

    2009-01-01

    The interactions of 400 GeV protons with different sequences of bent silicon crystals have been investigated at the H8 beam line of the CERN Super Proton Synchrotron. The multiple volume reflection of the proton beam has been studied in detail on a five-crystal reflector measuring an angular beam deflection =52.96±0.14 µrad. The efficiency was found larger than 80% for an angular acceptance at the reflector entrance of 70 µrad, with a maximal efficiency value of =0.90±0.01±0.03.

  15. Nanogranular SiO{sub 2} proton gated silicon layer transistor mimicking biological synapses

    Energy Technology Data Exchange (ETDEWEB)

    Liu, M. J.; Huang, G. S., E-mail: gshuang@fudan.edu.cn, E-mail: pfeng@nju.edu.cn; Guo, Q. L.; Tian, Z. A.; Li, G. J.; Mei, Y. F. [Department of Materials Science, Fudan University, Shanghai 200433 (China); Feng, P., E-mail: gshuang@fudan.edu.cn, E-mail: pfeng@nju.edu.cn; Shao, F.; Wan, Q. [School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093 (China)

    2016-06-20

    Silicon on insulator (SOI)-based transistors gated by nanogranular SiO{sub 2} proton conducting electrolytes were fabricated to mimic synapse behaviors. This SOI-based device has both top proton gate and bottom buried oxide gate. Electrical transfer properties of top proton gate show hysteresis curves different from those of bottom gate, and therefore, excitatory post-synaptic current and paired pulse facilitation (PPF) behavior of biological synapses are mimicked. Moreover, we noticed that PPF index can be effectively tuned by the spike interval applied on the top proton gate. Synaptic behaviors and functions, like short-term memory, and its properties are also experimentally demonstrated in our device. Such SOI-based electronic synapses are promising for building neuromorphic systems.

  16. High-Efficiency Volume Reflection of an Ultrarelativistic Proton Beam with a Bent Silicon Crystal

    CERN Document Server

    Scandale, Walter; Carnera, Alberto; Della Mea, Gianantonio; De Salvador, Davide; Milan, Riccardo; Vomiero, Alberto; Baricordi, Stefano; Dalpiaz, Pietro; Fiorini, Massimiliano; Guidi, Vincenzo; Martinelli,Giuliano; Mazzolari, Andrea; Milan, Emiliano; Ambrosi, Giovanni; Azzarello, Philipp; Battiston, Roberto; Bertucci, Bruna; Burger, William J; Ionica, Maria; Zuccon, Paolo; Cavoto, Gianluca; Santacesaria, Roberta; Valente, Paolo; Vallazza, Erik; Afonin, Alexander G; Baranov, Vladimir T; Chesnokov, Yury A; Kotov, Vladilen I; Maisheev, Vladimir A; Yaznin, Igor A; Afansiev, Sergey V; Kovalenko, Alexander D; Taratin, Alexander M; Denisov, Alexander S; Gavrikov, Yury A; Ivanov, Yuri M; Ivochkin, Vladimir G; Kosyanenko, Sergey V; Petrunin, Anatoli A; Skorobogatov, Vyacheslav V; Suvorov, Vsevolod M; Bolognini, Davide; Foggetta,Luca; Hasan, Said; Prest, Michela

    2007-01-01

    The volume reflection phenomenon was detected while investigating 400 GeV proton interactions with bent silicon crystals in the external beam H8 of the CERN Super Proton Synchrotron. Such a process was observed for a wide interval of crystal orientations relative to the beam axis, and its efficiency exceeds 95%, thereby surpassing any previously observed value. These observations suggest new perspectives for the manipulation of high-energy beams, e.g., for collimation and extraction in new-generation hadron colliders, such as the CERN Large Hadron Collider.

  17. A Method to Simulate the Observed Surface Properties of Proton Irradiated Silicon Strip Sensors

    CERN Document Server

    Peltola, Timo Hannu Tapani

    2014-01-01

    A defect model of Synopsys Sentaurus TCAD simulation package for the bulk properties of proton irradiated devices has been producing simulations closely matching to measurements of silicon strip detectors. However, the model does not provide the expected behavior due to the fluence increased surface damage. The solution requires an approach that does not affect the accurate bulk properties produced by the proton model, but only adds to it the required radiation induced properties close to the surface. These include the observed position dependency of the strip detector's...

  18. Optical spectroscopy of vacancy related defects in silicon carbide generated by proton irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Kasper, C.; Sperlich, A.; Simin, D.; Astakhov, G.V. [Experimental Physics VI, Julius Maximilian University of Wuerzburg (Germany); Kraus, H. [Japan Atomic EnergyAgency, Takasaki, Gunma (Japan); Experimental Physics VI, Julius Maximilian University of Wuerzburg (Germany); Makino, T.; Sato, S.I.; Ohshima, T. [Japan Atomic EnergyAgency, Takasaki, Gunma (Japan); Dyakonov, V. [Experimental Physics VI, Julius Maximilian University of Wuerzburg (Germany); ZAE Bayern, Wuerzburg (Germany)

    2016-07-01

    Defects in silicon carbide (SiC) received growing attention in recent years, because they are promising candidates for spin based quantum information processing. In this study we examine silicon vacancies in 4H-SiC crystals generated by proton irradiation. By the use of confocal microscopy the implantation depth of Si vacancies for varying proton energies can be verified. An important issue is to ascertain the nature and distribution of the defects. For this purpose, we use the characteristic photoluminescence spectrum of Si vacancies, whose intensity is proportional to the defect density. Using xyz-scans, where the photoluminescence at each mapping point is recorded, one can thus determine the vacancies nature and their distribution in the SiC crystal. Additionally we verify the nature of the examined defects by measuring their uniquely defined zero-field-splitting by using ODMR associated with defect spins.

  19. A Method to Simulate the Observed Surface Properties of Proton Irradiated Silicon Strip Sensors

    CERN Document Server

    INSPIRE-00335524; Bhardwaj, A.; Dalal, R.; Eber, R.; Eichhorn, T.; Lalwani, K.; Messineo, A.; Printz, M.; Ranjan, K.

    2015-04-23

    During the scheduled high luminosity upgrade of LHC, the world's largest particle physics accelerator at CERN, the position sensitive silicon detectors installed in the vertex and tracking part of the CMS experiment will face more intense radiation environment than the present system was designed for. To upgrade the tracker to required performance level, extensive measurements and simulations studies have already been carried out. A defect model of Synopsys Sentaurus TCAD simulation package for the bulk properties of proton irradiated devices has been producing simulations closely matching with measurements of silicon strip detectors. However, the model does not provide expected behavior due to the fluence increased surface damage. The solution requires an approach that does not affect the accurate bulk properties produced by the proton model, but only adds to it the required radiation induced properties close to the surface. These include the observed position dependency of the strip detector's charge collec...

  20. Proton-irradiation technology for high-frequency high-current silicon welding diode manufacturing

    International Nuclear Information System (INIS)

    Lagov, P B; Drenin, A S; Zinoviev, M A

    2017-01-01

    Different proton irradiation regimes were tested to provide more than 20 kHz-frequency, soft reverse recovery “snap-less” behavior, low forward voltage drop and leakage current for 50 mm diameter 7 kA/400 V welding diode Al/Si/Mo structure. Silicon diode with such parameters is very suitable for high frequency resistance welding machines of new generation for robotic welding. (paper)

  1. Proton-irradiation technology for high-frequency high-current silicon welding diode manufacturing

    Science.gov (United States)

    Lagov, P. B.; Drenin, A. S.; Zinoviev, M. A.

    2017-05-01

    Different proton irradiation regimes were tested to provide more than 20 kHz-frequency, soft reverse recovery “snap-less” behavior, low forward voltage drop and leakage current for 50 mm diameter 7 kA/400 V welding diode Al/Si/Mo structure. Silicon diode with such parameters is very suitable for high frequency resistance welding machines of new generation for robotic welding.

  2. Comparative measurements of proton dechanneling in silicon under channeling, blocking and double alignment conditions

    International Nuclear Information System (INIS)

    Kerkow, H.; Pietsch, H.; Taeubner, F.

    1980-01-01

    Backscattering yields of 300 keV protons are measured under channeling (sub(ch)), blocking (sub(bl)) and double alignment (sub(da)) conditions on (111)-silicon crystals. It was established that the relation sub(ch)-sub(bl)sub(da) is fulfilled within an experimental error of 10% for clean surfaces as well as for vacuum deposited layers on the crystal surface. (author)

  3. Nafion/Silicon Oxide Composite Membrane for High Temperature Proton Exchange Membrane Fuel Cell

    Institute of Scientific and Technical Information of China (English)

    2007-01-01

    Nafion/Silicon oxide composite membranes were produced via in situ sol-gel reaction of tetraethylorthosilicate (TEOS) in Nafion membranes. The physicochemical properties of the membranes were studied by FT-IR, TG-DSC and tensile strength. The results show that the silicon oxide is compatible with the Nafion membrane and the thermo stability of Nafion/Silicon oxide composite membrane is higher than that of Nafion membrane. Furthermore, the tensile strength of Nafion/Silicon oxide composite membrane is similar to that of the Nafion membrane. The proton conductivity of Nafion/Silicon oxide composite membrane is higher than that of Nafion membrane. When the Nafion/Silicon oxide composite membrane was employed as an electrolyte in H2/O2 PEMFC, a higher current density value (1 000 mA/cm2 at 0.38 V) than that of the Nafion 1135 membrane (100 mA/cm2 at 0.04 V) was obtained at 110 ℃.

  4. Systematic investigation of background sources in neutron flux measurements with a proton-recoil silicon detector

    Energy Technology Data Exchange (ETDEWEB)

    Marini, P., E-mail: marini@cenbg.in2p3.fr [CENBG, CNRS/IN2P3-Université de Bordeaux, Chemin du Solarium B.P. 120, 33175 Gradignan (France); Mathieu, L. [CENBG, CNRS/IN2P3-Université de Bordeaux, Chemin du Solarium B.P. 120, 33175 Gradignan (France); Acosta, L. [Instituto de Física, Universidad Nacional Autónoma de México, Apartado Postal 20-364, México D.F. 01000 (Mexico); Aïche, M.; Czajkowski, S.; Jurado, B.; Tsekhanovich, I. [CENBG, CNRS/IN2P3-Université de Bordeaux, Chemin du Solarium B.P. 120, 33175 Gradignan (France)

    2017-01-01

    Proton-recoil detectors (PRDs), based on the well known standard H(n,p) elastic scattering cross section, are the preferred instruments to perform precise quasi-absolute neutron flux measurements above 1 MeV. The limitations of using a single silicon detector as PRD at a continuous neutron beam facility are investigated, with the aim of extending such measurements to neutron energies below 1 MeV. This requires a systematic investigation of the background sources affecting the neutron flux measurement. Experiments have been carried out at the AIFIRA facility to identify these sources. A study on the role of the silicon detector thickness on the background is presented and an energy limit on the use of a single silicon detector to achieve a neutron flux precision better than 1% is given.

  5. Anomalous effects in silicon solar cell irradiated by 1-MeV protons

    Science.gov (United States)

    Kachare, R.; Anspaugh, B. E.

    1989-01-01

    Several silicon solar cells having thicknesses of approximately 63 microns, with and without back-surface fields (BSF), were irradiated with 1-MeV protons having fluences between 10 to the 10th and 10 to the 12th sq cm. The irradiations were performed using both normal and isotropic incidence on the rear surfaces of the cells. It was observed that after irradiation with fluences greater than 10 to the 11th protons/sq cm, all BSF cells degraded at a faster rate than cells without BSF. The irradiation results are analyzed using a model in which irradiation-induced defects in the BSF region are taken into account. Tentatively, it is concluded that an increase in defect density due to the formation of aluminum and proton complexes in BSF cells is responsible for the higher-power loss in the BSF cells compared to the non-BSF cells.

  6. Measurement and Simulation of the Variation in Proton-Induced Energy Deposition in Large Silicon Diode Arrays

    Science.gov (United States)

    Howe, Christina L.; Weller, Robert A.; Reed, Robert A.; Sierawski, Brian D.; Marshall, Paul W.; Marshall, Cheryl J.; Mendenhall, Marcus H.; Schrimpf, Ronald D.

    2007-01-01

    The proton induced charge deposition in a well characterized silicon P-i-N focal plane array is analyzed with Monte Carlo based simulations. These simulations include all physical processes, together with pile up, to accurately describe the experimental data. Simulation results reveal important high energy events not easily detected through experiment due to low statistics. The effects of each physical mechanism on the device response is shown for a single proton energy as well as a full proton space flux.

  7. Performance Test Results of a Single-sided Silicon Strip Detector with a Radioactive Source and a Proton Beam

    International Nuclear Information System (INIS)

    Ki, Y. I.; Kah, D. H.; Son, D. H.; Kang, H. D.; Kim, H. J.; Kim, H. O.; Bae, J. B.; Ryu, S.; Park, H.; Kim, K. R.

    2007-01-01

    Due to high intrinsic precision and high speed properties of a silicon material, the silicon detector has been used in various applications such as medical imaging detector, radiation detector, positioning detectors in space science and experimental particle physics. High technology, modern equipment, and deep expertise are required to design and fabricate good quality of silicon sensors. Only few facilities in the world can develop silicon sensors which meet requirements of sensor performances. That is one of main reasons that the silicon sensor is so expensive and it takes time to purchase the silicon sensor once it is ordered. We designed and fabricated AC-coupled single-sided silicon strip sensors and developed front-end electronics and DAQ system to read out sensor signals. The silicon strip sensors were fabricated on a 5-in. n-type silicon wafer which has an orientation, high resistivity (>5 kΩ · cm) and a thickness of 380 μm. We measured the signal-to-noise ratio (SNR) of each channel by using a radioactive source and a 45 MeV proton beam from the MC-50 cyclotron at the Korea Institute of Radiological and Medical Science (KIRAMS) in Seoul. We present the measurement results of the SNRs of the silicon strip sensor with a proton beam and radioactive sources

  8. Comparison of proton microbeam and gamma irradiation for the radiation hardness testing of silicon PIN diodes

    Science.gov (United States)

    Jakšić, M.; Grilj, V.; Skukan, N.; Majer, M.; Jung, H. K.; Kim, J. Y.; Lee, N. H.

    2013-09-01

    Simple and cost-effective solutions using Si PIN diodes as detectors are presently utilized in various radiation-related applications in which excessive exposure to radiation degrades their charge transport properties. One of the conventional methods for the radiation hardness testing of such devices is time-consuming irradiation with electron beam or gamma-ray irradiation facilities, high-energy proton accelerators, or with neutrons from research reactors. Recently, for the purpose of radiation hardness testing, a much faster nuclear microprobe based approach utilizing proton irradiation has been developed. To compare the two different irradiation techniques, silicon PIN diodes have been irradiated with a Co-60 gamma radiation source and with a 6 MeV proton microbeam. The signal degradation in the silicon PIN diodes for both irradiation conditions has been probed by the IBIC (ion beam induced charge) technique, which can precisely monitor changes in charge collection efficiency. The results presented are reviewed on the basis of displacement damage calculations and NIEL (non-ionizing energy loss) concept.

  9. Study of the bistable hydrogen donors properties in silicon implanted by the protons

    International Nuclear Information System (INIS)

    Abdullin, Kh.A.; Gorelkinskij, Yu.V.; Serikkanov, A.S.

    2003-01-01

    The proton implantation in silicon with doses 10 16 -10 17 cm -2 leads to formation of the hydrogen supersaturated solid solution in the Si. At the room temperature the hydrogen mobility on radiation defects limited by the H atom capture is inappreciably low. Thermal annealing at 400-500 Deg. C results in the decay and rebuilding of hydrogen-containing radiation defects and precipitants, that leads to reduction of the free energy of the system. Precipitation occurring in the form of nano-cluster defects formation, containing the hydrogen atoms. Thermal annealing of the silicon implanted by hydrogen at ∼450 Deg. C during 20 min. causing the hydrogen precipitation process and defects agglomeration leads to donor centers formation registering by the Hall effect

  10. CCE measurements and annealing studies on proton-irradiated p-type MCz silicon diodes

    CERN Document Server

    Hoedlmoser, H; Köhler, M; Nordlund, H

    2007-01-01

    Magnetic Czochralski (MCz) silicon has recently been investigated for the development of radiation tolerant detectors for future high-luminosity HEP experiments. A study of p-type MCz Silicon diodes irradiated with protons up to a fluence of has been performed by means of Charge Collection Efficiency (CCE) measurements as well as standard CV/IV characterizations. The changes of CCE, full depletion voltage and leakage current as a function of fluence are reported. A subsequent annealing study of the irradiated detectors shows an increase in effective doping concentration and a decrease in the leakage current, whereas the CCE remains basically unchanged. Two different series of detectors have been compared differing in the implantation dose of p-spray isolation as well as effective doping concentration (Neff) of the p-type bulk presumably due to a difference in thermal donor (TD) activation during processing. The series with the higher concentration of TDs shows a delayed reverse annealing of Neff after irradia...

  11. Silicon hydride nanocrystals as catalysts for proton production in water-organic liquid mixtures

    KAUST Repository

    Chaieb, Sahraoui

    2014-08-05

    Embodiments of the present methods may be used to produce energy in the form of an electrical current from water without the use of fossil fuel. Silicon hydride is very easy to make. This procedure in conjunction with an enzyme to produce hydrogen gas for fuel cells and other small devices. In fuel cells the production of protons may be bypassed, and an oxidant such as permanganate or oxygen from air may be used to drive the fuel cells. In such an embodiment, an intermediate reaction may not be needed to produce protons. In one embodiment, membrane-less laminar flow fuel cells with an external grid for oxygen supply from the air may be used.

  12. Capabilities of silicon Shottki barriers and planar detectors in low-energy proton spectometry

    Energy Technology Data Exchange (ETDEWEB)

    Verbitskaya, E M; Eremin, V K; Malyarenko, A M; Sakharov, V I; Serenkov, I T; Strokan, N B; Sukhanov, V L

    1987-05-12

    Dependence of the resolution of surface barrier and planar diffusion silicon detectors on proton energy is investigated. The experiment was conducted at the device, representing the double mass spectrometer with the maximal energy of single-charged ions up to 200 keV. Two advantages of using planar diffusion detectors for light low-energy ion spectrometry is established: high energy resolution and independence of signal amplitude of bias voltage. Background noise represents the main factor dictaiting resolution, but fluctuations of losses in input window are sufficient as well. It was concluded that planar detector application for spectrometry of protons with energy of less than 200 keV would improve the resolution up to 2.2 keV without detector cooling.

  13. Low-temperature positron-lifetime studies of proton-irradiated silicon

    DEFF Research Database (Denmark)

    Mäkinen, S.; Rajainmäki, H.; Linderoth, Søren

    1990-01-01

    The positron-lifetime technique has been used to identify defects created in high-purity single-crystal silicon by irradiation with 12-MeV protons at 15 K, and the evolution of the defects has been studied by subsequent annealings between 20 and 650 K. Two clear annealing steps were seen...... in the samples, the first starting at 100 K and the other at 400 K. The first is suggested to be a result of the migration of free, negatively charged monovacancies, and the second is connected to the annealing of some vacancy-impurity complexes, probably negatively charged vacancy-oxygen pairs. The specific...

  14. Correlation of displacement effects produced by electrons, protons, and neutrons in silicon

    International Nuclear Information System (INIS)

    van Lint, V.A.J.; Gigas, G.; Barengoltz, J.

    1975-01-01

    The correlation of displacement effects produced by electrons, protons, and neutrons in silicon is studied. Available data from the literature is employed. In particular the scope of the study is limited to the degradation of excess carrier lifetime and device electrical parameters directly related to it. The degree to which displacement effects may be correlated in order to predict semiconductor device response based on response data to another type of radiation is discussed. Useful ranges of the correlation factors (K/sub tau/ ratios) as a function of device majority carrier type, device resistivity, and injection level are presented. A significant dependence on injection level for the correlation factors is found

  15. Comparison of pad detectors produced on different silicon materials after irradiation with neutrons, protons and pions

    International Nuclear Information System (INIS)

    Kramberger, G.; Cindro, V.; Dolenc, I.; Mandic, I.; Mikuz, M.; Zavrtanik, M.

    2010-01-01

    A set of 44 pad detectors produced on p- and n-type MCz and Fz wafers was irradiated with 23 GeV protons, 200 MeV pions and reactor neutrons up to the equivalent fluences of Φ eq =3x10 15 cm -2 . The evolution of the full depletion voltage and the leakage current were monitored during short- and long-term annealing. At selected representative annealing steps, charge collection measurements were performed for all samples with LHC speed electronics. Measurements of full depletion voltage, leakage current and charge collection efficiency were compared for different irradiation particles and silicon materials.

  16. Comparison of pad detectors produced on different silicon materials after irradiation with neutrons, protons and pions

    Energy Technology Data Exchange (ETDEWEB)

    Kramberger, G., E-mail: Gregor.Kramberger@ijs.s [Jozef Stefan Institute and Department of Physics, University of Ljubljana, SI-1000 Ljubljana (Slovenia); Cindro, V.; Dolenc, I.; Mandic, I.; Mikuz, M.; Zavrtanik, M. [Jozef Stefan Institute and Department of Physics, University of Ljubljana, SI-1000 Ljubljana (Slovenia)

    2010-01-01

    A set of 44 pad detectors produced on p- and n-type MCz and Fz wafers was irradiated with 23 GeV protons, 200 MeV pions and reactor neutrons up to the equivalent fluences of PHI{sub eq}=3x10{sup 15}cm{sup -2}. The evolution of the full depletion voltage and the leakage current were monitored during short- and long-term annealing. At selected representative annealing steps, charge collection measurements were performed for all samples with LHC speed electronics. Measurements of full depletion voltage, leakage current and charge collection efficiency were compared for different irradiation particles and silicon materials.

  17. Quantitative study of the transmission of axially channeled protons in thin silicon crystals

    International Nuclear Information System (INIS)

    Rosner, J.S.; Gibson, W.M.; Golovchenko, J.A.; Goland, A.N.; Wegner, H.E.

    1978-01-01

    The azimuthal distributions of protons transmitted through thin silicon single crystals near the axis were measured using a two-dimensional position-sensitive detector. The data are composed of ringlike distributions with strong azimuthal and transverse energy dependence. The azimuthal distributions are compared with theoretical predictions based on the random string approximation using different forms of the interatomic potential. ''Blocking'' in the transverse plane is also observed. In addition, from an analysis of the radial spreading of the distribution the effects of inelastic scattering in the transverse plane are clearly seen

  18. Impact of irradiations by protons with different energies on silicon sensors

    International Nuclear Information System (INIS)

    Neubueser, Coralie

    2013-06-01

    In the frame of the CMS tracker upgrade campaign the radiation damage of oxygenrich n-type silicon pad diodes induced by 23 MeV and 23 GeV protons was investigated. The diodes were manufactured by Hamamatsu Photonics. After irradiation with 1 MeV neutron equivalent fluences between 1 x 10 11 cm -2 and 1.5 x 10 15 cm -2 , the sensors were electrically characterized by means of capacitance-voltage (CV) and current-voltage (IV) measurements. Current pulses recorded by the Transient Current Technique (TCT) and Charge Collection Efficiency (CCE) measurements show a dependence of the bulk damage on the proton energy. At a fluence of Φ eq ∼3 x 10 14 cm -2 oxygen-rich n-type diodes demonstrate clear Space Charge Sign Inversion (SCSI) after 23 MeV proton irradiation. This effect does not appear after the irradiation with 23 GeV protons. Moreover, RD50 pad diodes were irradiated with 23 MeV protons, electrically characterized and compared to results obtained after 23 GeV irradiations. Our previous observation on the energy dependence of the radiation damage could be confirmed. In order to get a deeper understanding of the differences of the radiation induced defects, the Deep Level Transient Spectroscopy (DLTS) and Thermally Stimulated Current Technique (TSC) were utilized. Defects with impact on the space charge could be identified and characterized and it was possible to find some hints for the reason of the SCSI after 23 MeV proton irradiation. Moreover, a dependence on the oxygen concentration of the sensors could be observed.

  19. Impact of irradiations by protons with different energies on silicon sensors

    Energy Technology Data Exchange (ETDEWEB)

    Neubueser, Coralie

    2013-06-15

    In the frame of the CMS tracker upgrade campaign the radiation damage of oxygenrich n-type silicon pad diodes induced by 23 MeV and 23 GeV protons was investigated. The diodes were manufactured by Hamamatsu Photonics. After irradiation with 1 MeV neutron equivalent fluences between 1 x 10{sup 11} cm{sup -2} and 1.5 x 10{sup 15} cm{sup -2}, the sensors were electrically characterized by means of capacitance-voltage (CV) and current-voltage (IV) measurements. Current pulses recorded by the Transient Current Technique (TCT) and Charge Collection Efficiency (CCE) measurements show a dependence of the bulk damage on the proton energy. At a fluence of {Phi}{sub eq}{approx}3 x 10{sup 14} cm{sup -2} oxygen-rich n-type diodes demonstrate clear Space Charge Sign Inversion (SCSI) after 23 MeV proton irradiation. This effect does not appear after the irradiation with 23 GeV protons. Moreover, RD50 pad diodes were irradiated with 23 MeV protons, electrically characterized and compared to results obtained after 23 GeV irradiations. Our previous observation on the energy dependence of the radiation damage could be confirmed. In order to get a deeper understanding of the differences of the radiation induced defects, the Deep Level Transient Spectroscopy (DLTS) and Thermally Stimulated Current Technique (TSC) were utilized. Defects with impact on the space charge could be identified and characterized and it was possible to find some hints for the reason of the SCSI after 23 MeV proton irradiation. Moreover, a dependence on the oxygen concentration of the sensors could be observed.

  20. Depletion voltage studies on n-in-n MCz silicon diodes after irradiation with 70 MeV protons

    CERN Document Server

    Holmkvist, William

    2014-01-01

    Silicon detectors is the main component in the pixel detectors in the ATLAS experiment at CERN in order to detect the particles and recreate their tracks after a proton-proton collision. One criteria on these detectors is to be able to operate in the high radiation field close to the particle collision. The usual behavior of the silicon detectors is that they get type inverted and an increase in the depletion voltage can be seen after exposed to significant amounts of radiation. In contrast n-type Magnetic Czochralski (MCz) silicon doesn’t follow FZ silicons pattern of getting type inverted when it comes to high energy particle irradiation, in the range of GeV. However it was observed that MCz silicon diodes that had been irradiated with 23 MeV protons followed the FZ silicon behavior and did type invert. The aim of the project is to find out how the depletion voltage of MCz silicon changes after being irradiated by 70 MeV at fluencies of 1E13, 1E14 and 5E14 neq/cm2, to give a further insight of at what en...

  1. Temperature and humidity effect on aging of silicone rubbers as sealing materials for proton exchange membrane fuel cell applications

    International Nuclear Information System (INIS)

    Chang, Huawei; Wan, Zhongmin; Chen, Xi; Wan, Junhua; Luo, Liang; Zhang, Haining; Shu, Shuiming; Tu, Zhengkai

    2016-01-01

    Highlights: • Aging of silicone rubbers with different hardness was investigated. • Existed water molecules from humidified gases can accelerate the aging process. • Silicone rubber with hardness of 40 is more suitable as sealing materials. • Silicone rubbers can be used as sealing materials below 80 °C but not above 100 °C. - Abstract: Durability and reliability of seals around perimeter of each unit are critical to the lifetime of proton exchange membrane fuel cells. In this study, we investigate the aging of silicone rubbers with different hardness, often used as sealing materials for fuel cells, subjected to dry and humidified air at different temperatures. The aging properties are characterized by variation of permanent compression set value under compression, mechanical properties, and surface morphology as well. The results show that aging of silicone rubbers becomes more severe with the increase in subjected temperature. At temperature above 100 °C, silicone rubbers are not suitable for fuel cell applications. The existed water molecules from humidified gases can accelerate the aging of silicone rubbers. Among the tested samples, silicone rubber with hardness of 40 is more durable than that with hardness of 30 and 50 for fuel cells. The change of chemical structure after aging suggests that the aging of silicone rubbers mainly results from the chemical decomposition of cross-linker units for connection of polysiloxane backbones and of methyl groups attached to silicon atoms.

  2. Measurement of neutron spectra generated from bombardment of 4 to 24 MeV protons on a thick 9Be target and estimation of neutron yields

    International Nuclear Information System (INIS)

    Paul, Sabyasachi; Sahoo, G. S.; Tripathy, S. P.; Sunil, C.; Bandyopadhyay, T.; Sharma, S. C.; Ramjilal,; Ninawe, N. G.; Gupta, A. K.

    2014-01-01

    A systematic study on the measurement of neutron spectra emitted from the interaction of protons of various energies with a thick beryllium target has been carried out. The measurements were carried out in the forward direction (at 0° with respect to the direction of protons) using CR-39 detectors. The doses were estimated using the in-house image analyzing program autoTRAK-n, which works on the principle of luminosity variation in and around the track boundaries. A total of six different proton energies starting from 4 MeV to 24 MeV with an energy gap of 4 MeV were chosen for the study of the neutron yields and the estimation of doses. Nearly, 92% of the recoil tracks developed after chemical etching were circular in nature, but the size distributions of the recoil tracks were not found to be linearly dependent on the projectile energy. The neutron yield and dose values were found to be increasing linearly with increasing projectile energies. The response of CR-39 detector was also investigated at different beam currents at two different proton energies. A linear increase of neutron yield with beam current was observed

  3. Measurement of activation reaction rate distribution on a mercury target with a lead-reflector and light-water-moderator for high energy proton bombardment using AGS accelerator

    International Nuclear Information System (INIS)

    Kasugai, Yoshimi; Takada, Hiroshi; Meigo, Shin-ichiro

    2001-02-01

    Characteristic of spallation neutrons driven by GeV protons from a mercury target with a lead-reflector and light-water-moderator was studied experimentally using the Alternating Gradient Synchrotron (AGS) facility of Brookhaven National Laboratory in a framework of the ASTE (AGS Spallation Target Experiment) collaboration. Several reaction rates along with the mercury target were measured with the activation method at incident proton energies of 1.94, 12 and 24 GeV. Indium, niobium, aluminum, cobalt, nickel and bismuth were used as activation detectors to cover the threshold energy of between 0.33 and 40.9 MeV. This report summarizes the experimental procedure with all the measured data. (author)

  4. Hydrogenated amorphous silicon p–i–n solar cells deposited under well controlled ion bombardment using pulse-shaped substrate biasing

    NARCIS (Netherlands)

    Wank, M.A.; Swaaij, van R.A.C.M.M.; Sanden, van de M.C.M.; Zeman, M.

    2012-01-01

    We applied pulse-shaped biasing (PSB) to the expanding thermal plasma deposition of intrinsic hydrogenated amorphous silicon layers at substrate temperatures of 200¿°C and growth rates of about 1¿nm/s. Fourier transform infrared spectroscopy of intrinsic films showed a densification with increasing

  5. Hydrogenated amorphous silicon p-i-n solar cells deposited under well controlled ion bombardment using pulse-shaped substrate biasing

    NARCIS (Netherlands)

    Wank, M. A.; van Swaaij, R.; R. van de Sanden,; Zeman, M.

    2012-01-01

    We applied pulse-shaped biasing (PSB) to the expanding thermal plasma deposition of intrinsic hydrogenated amorphous silicon layers at substrate temperatures of 200 degrees C and growth rates of about 1?nm/s. Fourier transform infrared spectroscopy of intrinsic films showed a densification with

  6. Initial testing of a pixelated silicon detector prototype in proton therapy.

    Science.gov (United States)

    Wroe, Andrew J; McAuley, Grant; Teran, Anthony V; Wong, Jeannie; Petasecca, Marco; Lerch, Michael; Slater, James M; Rozenfeld, Anatoly B

    2017-09-01

    As technology continues to develop, external beam radiation therapy is being employed, with increased conformity, to treat smaller targets. As this occurs, the dosimetry methods and tools employed to quantify these fields for treatment also have to evolve to provide increased spatial resolution. The team at the University of Wollongong has developed a pixelated silicon detector prototype known as the dose magnifying glass (DMG) for real-time small-field metrology. This device has been tested in photon fields and IMRT. The purpose of this work was to conduct the initial performance tests with proton radiation, using beam energies and modulations typically associated with proton radiosurgery. Depth dose and lateral beam profiles were measured and compared with those collected using a PTW parallel-plate ionization chamber, a PTW proton-specific dosimetry diode, EBT3 Gafchromic film, and Monte Carlo simulations. Measurements of the depth dose profile yielded good agreement when compared with Monte Carlo, diode and ionization chamber. Bragg peak location was measured accurately by the DMG by scanning along the depth dose profile, and the relative response of the DMG at the center of modulation was within 2.5% of that for the PTW dosimetry diode for all energy and modulation combinations tested. Real-time beam profile measurements of a 5 mm 127 MeV proton beam also yielded FWHM and FW90 within ±1 channel (0.1 mm) of the Monte Carlo and EBT3 film data across all depths tested. The DMG tested here proved to be a useful device at measuring depth dose profiles in proton therapy with a stable response across the entire proton spread-out Bragg peak. In addition, the linear array of small sensitive volumes allowed for accurate point and high spatial resolution one-dimensional profile measurements of small radiation fields in real time to be completed with minimal impact from partial volume averaging. © 2017 The Authors. Journal of Applied Clinical Medical Physics published

  7. Performance of 3-D architecture silicon sensors after intense proton irradiation

    CERN Document Server

    Parker, S I

    2001-01-01

    Silicon detectors with a three-dimensional architecture, in which the n- and p-electrodes penetrate through the entire substrate, have been successfully fabricated. The electrodes can be separated from each other by distances that are less than the substrate thickness, allowing short collection paths, low depletion voltages, and large current signals from rapid charge collection. While no special hardening steps were taken in this initial fabrication run, these features of three dimensional architectures produce an intrinsic resistance to the effects of radiation damage. Some performance measurements are given for detectors that are fully depleted and working after exposures to proton beams with doses equivalent to that from slightly more than ten years at the B-layer radius (50 mm) in the planned Atlas detector at the Large Hadron Collider at CERN. (41 refs).

  8. Innovative thin silicon detectors for monitoring of therapeutic proton beams: preliminary beam tests

    Science.gov (United States)

    Vignati, A.; Monaco, V.; Attili, A.; Cartiglia, N.; Donetti, M.; Fadavi Mazinani, M.; Fausti, F.; Ferrero, M.; Giordanengo, S.; Hammad Ali, O.; Mandurrino, M.; Manganaro, L.; Mazza, G.; Sacchi, R.; Sola, V.; Staiano, A.; Cirio, R.; Boscardin, M.; Paternoster, G.; Ficorella, F.

    2017-12-01

    To fully exploit the physics potentials of particle therapy in delivering dose with high accuracy and selectivity, charged particle therapy needs further improvement. To this scope, a multidisciplinary project (MoVeIT) of the Italian National Institute for Nuclear Physics (INFN) aims at translating research in charged particle therapy into clinical outcome. New models in the treatment planning system are being developed and validated, using dedicated devices for beam characterization and monitoring in radiobiological and clinical irradiations. Innovative silicon detectors with internal gain layer (LGAD) represent a promising option, overcoming the limits of currently used ionization chambers. Two devices are being developed: one to directly count individual protons at high rates, exploiting the large signal-to-noise ratio and fast collection time in small thicknesses (1 ns in 50 μm) of LGADs, the second to measure the beam energy with time-of-flight techniques, using LGADs optimized for excellent time resolutions (Ultra Fast Silicon Detectors, UFSDs). The preliminary results of first beam tests with therapeutic beam will be presented and discussed.

  9. Characterization of 150μm thick epitaxial silicon detectors from different producers after proton irradiation

    International Nuclear Information System (INIS)

    Hoedlmoser, H.; Moll, M.; Haerkoenen, J.; Kronberger, M.; Trummer, J.; Rodeghiero, P.

    2007-01-01

    Epitaxial (EPI) silicon has recently been investigated for the development of radiation tolerant detectors for future high-luminosity HEP experiments. A study of 150μm thick EPI silicon diodes irradiated with 24GeV/c protons up to a fluence of 3x10 15 p/cm 2 has been performed by means of Charge Collection Efficiency (CCE) measurements, investigations with the Transient Current Technique (TCT) and standard CV/IV characterizations. The aim of the work was to investigate the impact of radiation damage as well as the influence of the wafer processing on the material performance by comparing diodes from different manufacturers. The changes of CCE, full depletion voltage and leakage current as a function of fluence are reported. While the generation of leakage current due to irradiation is similar in all investigated series of detectors, a difference in the effective doping concentration can be observed after irradiation. In the CCE measurements an anomalous drop in performance was found even for diodes exposed to very low fluences (5x10 13 p/cm 2 ) in all measured series. This result was confirmed for one series of diodes in TCT measurements with an infrared laser. TCT measurements with a red laser showed no type inversion up to fluences of 3x10 15 p/cm 2 for n-type devices whereas p-type diodes undergo type inversion from p- to n-type for fluences higher than ∼2x10 14 p/cm 2

  10. Characterization of 150 $\\mu$m thick epitaxial silicon detectors from different producers after proton irradiation

    CERN Document Server

    Hoedlmoser, H; Haerkoenen, J; Kronberger, M; Trummer, J; Rodeghiero, P

    2007-01-01

    Epitaxial (EPI) silicon has recently been investigated for the development of radiation tolerant detectors for future high-luminosity HEP experiments. A study of 150 mm thick EPI silicon diodes irradiated with 24GeV=c protons up to a fluence of 3 1015 p=cm2 has been performed by means of Charge Collection Efficiency (CCE) measurements, investigations with the Transient Current Technique (TCT) and standard CV=IV characterizations. The aim of the work was to investigate the impact of radiation damage as well as the influence of the wafer processing on the material performance by comparing diodes from different manufacturers. The changes of CCE, full depletion voltage and leakage current as a function of fluence are reported. While the generation of leakage current due to irradiation is similar in all investigated series of detectors, a difference in the effective doping concentration can be observed after irradiation. In the CCE measurements an anomalous drop in performance was found even for diodes exposed to ...

  11. Electrical properties of as-grown and proton-irradiated high purity silicon

    Energy Technology Data Exchange (ETDEWEB)

    Krupka, Jerzy, E-mail: krupka@imio.pw.edu.pl [Institute of Microelectronics and Optoelectronics, Warsaw University of Technology, Koszykowa 75, 00-662 Warsaw (Poland); Karcz, Waldemar [Joint Institute for Nuclear Research, Joliot-Curie 6, 141980 Dubna (Russian Federation); Kamiński, Paweł [Institute of Electronic Materials Technology, Wólczyńska 13, 301-919 Warsaw (Poland); Jensen, Leif [Topsil Semiconductor Materials A/S, Siliciumvej 1, DK-3600 Frederikssund (Denmark)

    2016-08-01

    The complex permittivity of as-grown and proton-irradiated samples of high purity silicon obtained by the floating zone method was measured as a function of temperature at a few frequencies in microwave spectrum by employing the quasi TE{sub 011} and whispering gallery modes excited in the samples under test. The resistivity of the samples was determined from the measured imaginary part of the permittivity. The resistivity was additionally measured at RF frequencies employing capacitive spectroscopy as well as in a standard direct current experiment. The sample of as-grown material had the resistivity of ∼85 kΩ cm at room temperature. The sample irradiated with 23-MeV protons had the resistivity of ∼500 kΩ cm at 295 K and its behavior was typical of the intrinsic material at room and at elevated temperatures. For the irradiated sample, the extrinsic conductivity region is missing and at temperatures below 250 K hopping conductivity occurs. Thermal cycle hysteresis of the resistivity for the sample of as-grown material is observed. After heating and subsequent cooling of the sample, its resistivity decreases and then slowly (∼50 h) returns to the initial value.

  12. Demonstration of Synaptic Behaviors and Resistive Switching Characterizations by Proton Exchange Reactions in Silicon Oxide

    Science.gov (United States)

    Chang, Yao-Feng; Fowler, Burt; Chen, Ying-Chen; Zhou, Fei; Pan, Chih-Hung; Chang, Ting-Chang; Lee, Jack C.

    2016-02-01

    We realize a device with biological synaptic behaviors by integrating silicon oxide (SiOx) resistive switching memory with Si diodes. Minimal synaptic power consumption due to sneak-path current is achieved and the capability for spike-induced synaptic behaviors is demonstrated, representing critical milestones for the use of SiO2-based materials in future neuromorphic computing applications. Biological synaptic behaviors such as long-term potentiation (LTP), long-term depression (LTD) and spike-timing dependent plasticity (STDP) are demonstrated systematically using a comprehensive analysis of spike-induced waveforms, and represent interesting potential applications for SiOx-based resistive switching materials. The resistive switching SET transition is modeled as hydrogen (proton) release from (SiH)2 to generate the hydrogen bridge defect, and the RESET transition is modeled as an electrochemical reaction (proton capture) that re-forms (SiH)2. The experimental results suggest a simple, robust approach to realize programmable neuromorphic chips compatible with large-scale CMOS manufacturing technology.

  13. Studies of radiation damage in silicon sensors and a measurement of the inelastic proton--proton cross-section at 13 TeV

    CERN Document Server

    AUTHOR|(INSPIRE)INSPIRE-00360674; Ward, Patricia

    This thesis presents studies of radiation damage in silicon sensors for the new ATLAS tracker at the high-luminosity LHC, calibrations of the LHC luminosity scale, and a measurement of the proton--proton inelastic cross-section at 13 TeV~with ATLAS data. The studies of radiation damage are performed by comparing sensor performance before and after irradiation, and include annealing studies. The measured quantities include: leakage current, depletion depth, inter-strip isolation, and charge collection. Surface and bulk damage is studied by comparing the results of sensors irradiated with protons and neutrons. The observed degradation of performance suggests the current sensor design will endure the radiation damage expected over the lifetime of the experiment at the high-luminosity LHC. The luminosity is calibrated for the proton--proton, proton--lead, and lead--lead collisions delivered by the LHC during 2013 and 2015. The absolute luminosity scale is derived with the van der Meer method. The systematic unc...

  14. Cross sections for pion, proton, and heavy-ion production from 800 MeV protons incident upon aluminum and silicon

    Energy Technology Data Exchange (ETDEWEB)

    Dicello, J.F. (Clarkson Univ., Potsdam, NY (USA)); Schillaci, M.E.; Liu Lonchang (Los Alamos National Lab., NM (USA))

    1990-01-01

    When high-energy cosmic rays interact with electronics or other materials in a spacecraft, including the occupants themselves, pions are produced as secondary particles. These secondary pions interact further in the materials producing nuclear secondaries, including nuclear recoils and heavy-ion tertiaries. The secondary pions and the the tertiary particles are capable of producing single-event upsets and other damage in integrated circuits and damage in biological systems. Negative pions stopping in materials are particularly effective because of their unique ability to produce short-range heavy particles from pion stars. With the Los Alamos National Laboratory's version of the intranuclear cascade evaporation code, VEGAS, we have calculated the number of pions produced per energy interval per incident proton from 800 MeV protons on aluminum-27 and silicon-28 along with corresponding results for neutrons, protons, and heavier ions. (orig.).

  15. Modification of Polymer Materials by Ion Bombardment: Case Studies

    International Nuclear Information System (INIS)

    Bielinski, D. M.; Jagielski, J.; Lipinski, P.; Pieczynska, D.; Ostaszewska, U.; Piatkowska, A.

    2009-01-01

    The paper discusses possibility of application of ion beam bombardment for modification of polymers. Changes to composition, structure and morphology of the surface layer produced by the treatment and their influence on engineering and functional properties of wide range of polymer materials are presented. Special attention has been devoted to modification of tribological properties. Ion bombardment results in significant reduction of friction, which can be explained by increase of hardness and wettability of polymer materials. Hard but thin enough skin does not result in cracking but improves their abrasion resistance. Contrary to conventional chemical treatment ion beam bombardment works even for polymers hardly susceptible to modification like silicone rubber or polyolefines.

  16. The new generations of power components will depend on neutron and/or electron bombardment techniques

    International Nuclear Information System (INIS)

    Lilen, H.

    1976-01-01

    Neutron and electron bombardment techniques for materials doping, newly introduced in the fabrication of power semiconductor components: diodes, transistors, thyristors, and triacs are briefly outlined. A neutron bombardment of high purity silicon results in a short-lived 31 Si isotope (from 30 Si) decaying into 31 P. The phosphorus with its five peripheral electrons induces a negative doping (N), and the neutron technique gives a homogeneous doping. Furthermore, silicon bombardment with 1 to 2MeV electrons induces micro-ruptures in the lattice, that act as recombination traps reducing carrier lifetimes. Consequently, gold diffusion techniques can be replaced by electron bombardment with a gain in controlling carrier lifetimes [fr

  17. X-ray spectrometry induced by electron and proton bombardment: Two complementary techniques for the micro-characterization of mineral materials

    International Nuclear Information System (INIS)

    Remond, G.; Gilles, C.; Isabelle, D.; Choi, C.G.; Rouer, O.; Cesbron, F.; Yang, C.

    1994-01-01

    Spatially resolved quantitative analysis by means of the Electron Probe Micro Analyser (EPMA) is now well established as a routine analytical method for point chemical analysis of a variety of mineral materials. Modern computer controlled EPMA are most often equipped with wavelength dispersive spectro- meters (WDS). Quantitative analyses are generally carried out according to a standard based approach, i. e, the x-ray intensities measured at the surface of the unknowns are normalized to those measured at the surface of reference specimens. By the use of energy dispersive spectrometry (EDS) a standardless quantitative based method is preferred when the incident beam current is not accurately known as for the case of EDS analysis coupled to Scanning Electron Microscopy (SEM). The accuracy of point analysis by means of electron beam induced x-ray spectrometry is discussed emphasizing the x-ray photon interactions respectively.The continuous x-ray emission is the physical limit of detection. The excitation conditions must be optimised in order to obtain the higher peak to continuous emission intensity ratios for each element within the matrix. Proton Induced X-ray Emission (PIXE) complements this electron induced x-ray emission for the localization of elements present at trace levels. The experimental procedure used for quantitative analysis by means of PIXE is illustrated emphasizing the use of a limited number of reference materials for deriving quantitative data from the raw PIXE spectra. The complementarity of EMPA/SEM and PIXE techniques is illustrated for the case of rare-earth elements (REE) bearing natural and synthetic doped zircon crystals (Si Zr O sub 4). For such compounds x-ray spectra are very complex because of the existence of severe peak overlaps between the L x-ray emission spectra of the REE. It is shown that cathodoluminescence (EPLA:SEM) and ionoluminescence (PIXE) may be an original alternative approach to x-ray spectrometry for studying REE

  18. Radiation-induced segregation in light-ion bombarded Ni-8% Si

    International Nuclear Information System (INIS)

    Packan, N.H.; Heatherly, L.; Kesternich, W.; Schroeder, H.

    1986-01-01

    Tensile specimens 60 μm thick of Ni-8 at. % Si have been bombarded at 475 0 C to doses of 0.1 to 0.3 dpa with either 7 MeV proton or 28 MeV alpha particle beams. Deliberate embrittlement by high temperature (700 0 C) preimplantation of helium was required to produce intergranular fracture. Depth profile sputtering and analysis in a Scanning Auger Microprobe was then used to study radiation-induced segregation of silicon both at the external surfaces and at internal interfaces. The external surfaces exhibited a strongly silicon-enriched zone for the first 10 to 20 nm followed by a broad (approx.200 nm), shallow silicon-depleted region. Segregation of silicon to grain boundaries varied from interface to interface and possibly from region to region on a given interface. In general, however, depth profiles of silicon content with distance from internal boundaries showed no noticeable depletion zone and a more gradual fall-off compared to the profiles from external surfaces. The variations of RIS among boundaries and with type of interface probably reflect, at least in part, intrinsic differences in sink efficiency

  19. Polarized photons from a silicon crystal in a 31 GeV electron beam at the Serpukhov proton accelerator

    International Nuclear Information System (INIS)

    Frolov, A.M.; Maisheev, V.A.; Arakelyan, E.A.; Armaganyan, A.A.; Avakyan, R.O.; Bayatyan, G.L.; Grigoryan, N.K.; Kechechyan, A.O.; Knyazyan, S.G.; Margaryan, A.T.

    1980-01-01

    Tagged photons coherently emitted in a silicon crystal by the 31 GeV electron beam of intensity 4 x 10 4 ppp and beam pulse duration of up to 1.7 s have been obtained at the Serpukhov proton accelerator. The photon intensities were I approx. 10 -1 - 10 -2 γ/e - in five almost equal energy bins within the total range k = (8.2-24.2) GeV. The calculated linear polarizations were P approx. 50-20%, respectively. Narrow peaks in the radiation intensity were observed when varying the orientation of a silicon crystal which could not be explained. The method for the experimental alignment of a crystal in electron beams at the proton accelerator has been described. (orig.)

  20. Si Micro-turbine by Proton BeamWriting and Porous Silicon Micromachining

    International Nuclear Information System (INIS)

    Rajta, I.; Szilasi, S.Z.; Fekete, Z.

    2008-01-01

    aspect ratio, completely or partially released microelements embedded in a cavity or a channel, thereby enabling us to form mobile components in the microfluidic MEMS. Although the process opens a new way in micromachining, the widening of the implanted regions around the projected range limits the dimensions and the geometry of the processed devices. The described technique can be exploited in fabrication of various MEMS with embedded mobile elements. This work is the first demonstration of a silicon device containing a moving part made by proton beam writing. Acknowledgements The support of the Hungarian National Research Found (OTKA) via grants T047002, A080, M041939, M36324 and F042474; and EU co-funded Economic Competitiveness Operative Programme (GVOP-3.2.1.-2004-04-0402/3.0) is gratefully acknowledged. The authors also thank the contribution of Dr. A.L. Toth with SEM analysis and Mr. B. Forgacs with design and fabrication of plastic encapsulation of the microturbine chip

  1. Signal height in silicon pixel detectors irradiated with pions and protons

    International Nuclear Information System (INIS)

    Rohe, T.; Acosta, J.; Bean, A.; Dambach, S.; Erdmann, W.; Langenegger, U.; Martin, C.; Meier, B.; Radicci, V.; Sibille, J.; Trueb, P.

    2010-01-01

    Pixel detectors are used in the innermost part of multi-purpose experiments at the Large Hadron Collider (LHC) and are therefore exposed to the highest fluences of ionising radiation, which in this part of the detectors consists mainly of charged pions. The radiation hardness of the detectors has been tested thoroughly up to the fluences expected at the LHC. In case of an LHC upgrade the fluence will be much higher and it is not yet clear up to which radii the present pixel technology can be used. To establish such a limit, pixel sensors of the size of one CMS pixel readout chip (PSI46V2.1) have been bump bonded and irradiated with positive pions up to 6x10 14 n eq /cm 2 at PSI and with protons up to 5x10 15 n eq /cm 2 . The sensors were taken from production wafers of the CMS barrel pixel detector. They use n-type DOFZ material with a resistance of about 3.7kΩcm and an n-side read out. As the performance of silicon sensors is limited by trapping, the response to a Sr-90 source was investigated. The highly energetic beta-particles represent a good approximation to minimum ionising particles. The bias dependence of the signal for a wide range of fluences will be presented.

  2. X-ray diffraction patterns in high-energy proton implanted silicon

    International Nuclear Information System (INIS)

    Wieteska, K.; Dluzewska, K.D.; Wierzchowski, W.; Graeff, W.

    1998-01-01

    Silicon crystals implanted with 1 and 1.6 MeV protons were studied by means of conventional source double-crystal and synchrotron multi-crystal arrangements. Both the rocking curves and series of topographs were recorded in different parallel settings employing different reflections and wavelengths of radiation. A comparison of rocking curves in different regions of implanted areas was performed in synchrotron multi-crystal arrangement with a beam of a very small diameter. The rocking curves exhibited subsidiary interference maxima with increasing periodicity on the low angle side. The plane wave topographs taken at different angular setting revealed characteristic fringes whose number decreased with increasing distance from the main maximum. The fringe pattern did not depend on the direction of the diffraction vector. The number of fringes for equivalent angular distance from the maximum was larger for higher order of reflection. The shape of the rocking curve and other diffraction patterns were reasonably explained assuming the lattice parameter change depth distribution proportional to the profile obtained from the Biersack-Ziegler theory and lateral non-uniformity of ion dose. A good approximation of the experimental results was obtained using numerical integration of the Takagi-Taupin equations. (orig.)

  3. Positron probing of phosphorus-vacancy complexes in silicon irradiated with 15 MeV protons

    Science.gov (United States)

    Arutyunov, N.; Emtsev, V.; Krause-Rehberg, R.; Elsayed, M.; Kessler, C.; Kozlovski, V.; Oganesyan, G.

    2015-06-01

    Defects in phosphorus-doped silicon samples of floating-zone material, n-FZ-Si(P), produced under irradiation with 15 MeV protons at room temperature are studied by positron annihilation lifetime spectroscopy over the temperature range of ∼ 30 K - 300 K and by low- temperature Hall effect measurements. After annealing of E-centersand divacancies, we detected for the first time high concentrations of positron traps which had not been observed earlier. These defects are isochronally annealed over the temperature interval of ∼ 320 °C - 700 °C they manifest themselves as electrically neutral deep donor centersin the material of n-type. A long-lived component of the positron lifetime, τ2(I2 enthalpy and entropy of annealing of these centersare Ea ∼ 1.05(0.21) eV and ΔSm ≈ 3.1(0.6)kB, respectively. It is argued that the microstructure of the defect consists of two vacancies, VV, and one atom of phosphorus, P. The split configuration of the VPV complex is shortly discussed.

  4. The role of non-elastic nuclear processes for intermediate-energy protons in silicon targets

    Energy Technology Data Exchange (ETDEWEB)

    Hormaza, Joel Mesa, E-mail: jmesa@ibb.unesp.br [Universidade Estadual Paulista Julio de Mesquita Filho (UNESP), Botucatu, SP (Brazil); Garcia, Cesar E., E-mail: cgarcia@instec.cu [Instituto Superior de Tecnologias y Ciencias Aplicadas (InSTEC), Havana (Cuba); Arruda Neto, Joao D.T.; Rodrigues, Tulio E., E-mail: arruda@if.usp.br, E-mail: tulio@if.usp.br [Universidade de Sao Paulo (USP), Sao Paulo, SP (Brazil). Instituto de Fisica; Schelin, Hugo R.; Denyak, Valery, E-mail: schelin@utfpr.edu.br, E-mail: denyak@gmail.com [Instituto de Pesquisa Pele Pequeno Principe, Curitiba, PR (Brazil); Paschuck, Sergei A.; Evseev, Ivan, E-mail: sergei@utfpr.edu.br, E-mail: evseev@utfpr.edu.br [Universidade Tecnologica Federal do Parana (UTFPR), Curitiba, PR (Brazil)

    2013-07-01

    The transportation of energetic ions in bulk matter is of direct interest in several areas including shielding against ions originating from either space radiations or terrestrial accelerators, cosmic ray propagation studies in galactic medium, or radiobiological effects resulting from the work place or clinical exposures. For carcinogenesis, terrestrial radiation therapy, and radiobiological research, knowledge of beam composition and interactions is necessary to properly evaluate the effects on human and animal tissues. For the proper assessment of radiation exposures both reliable transport codes and accurate input parameters are needed. In the last years efforts have been increasing in order to develop more effective models to describe and predict the damages induced by radiation in electronic devices. In this sense, the interaction of protons with those devices, particularly which operate in space, is a topic of paramount importance, mainly because although the majority of them are made with silicon, experimental data on p+Si nuclear processes is very sparse. In this work we have used a new quite sophisticated Monte Carlo multicollisional intranuclear cascade (MCMC) code for pre-equilibrium emission, plus de-excitation of residual nucleus by two ways: evaporation of particles (mainly nucleons, but also composites) and possibly fragmentation/fission in the case of heavy residues, in order to study some observable of nuclear interaction of protons between 100-200 MeV in a {sup 28}Si target. The code has been developed with very recent improvements that take into account Pauli blocking effects in a novel and more precise way, as well as a more rigorous energy balance, an energy stopping time criterion for pre-equilibrium emission and the inclusion of deuteron, triton and 3He emissions in the evaporation step, which eventually concurs with fragmentation/break-up stage. The fragment mass distributions, as well as the multiplicities and the spectra of secondary

  5. The role of non-elastic nuclear processes for intermediate-energy protons in silicon targets

    International Nuclear Information System (INIS)

    Hormaza, Joel Mesa; Garcia, Cesar E.; Arruda Neto, Joao D.T.; Rodrigues, Tulio E.; Paschuck, Sergei A.; Evseev, Ivan

    2013-01-01

    The transportation of energetic ions in bulk matter is of direct interest in several areas including shielding against ions originating from either space radiations or terrestrial accelerators, cosmic ray propagation studies in galactic medium, or radiobiological effects resulting from the work place or clinical exposures. For carcinogenesis, terrestrial radiation therapy, and radiobiological research, knowledge of beam composition and interactions is necessary to properly evaluate the effects on human and animal tissues. For the proper assessment of radiation exposures both reliable transport codes and accurate input parameters are needed. In the last years efforts have been increasing in order to develop more effective models to describe and predict the damages induced by radiation in electronic devices. In this sense, the interaction of protons with those devices, particularly which operate in space, is a topic of paramount importance, mainly because although the majority of them are made with silicon, experimental data on p+Si nuclear processes is very sparse. In this work we have used a new quite sophisticated Monte Carlo multicollisional intranuclear cascade (MCMC) code for pre-equilibrium emission, plus de-excitation of residual nucleus by two ways: evaporation of particles (mainly nucleons, but also composites) and possibly fragmentation/fission in the case of heavy residues, in order to study some observable of nuclear interaction of protons between 100-200 MeV in a 28 Si target. The code has been developed with very recent improvements that take into account Pauli blocking effects in a novel and more precise way, as well as a more rigorous energy balance, an energy stopping time criterion for pre-equilibrium emission and the inclusion of deuteron, triton and 3He emissions in the evaporation step, which eventually concurs with fragmentation/break-up stage. The fragment mass distributions, as well as the multiplicities and the spectra of secondary particles

  6. Theoretical and experimental comparison of proton and helium-beam radiography using silicon pixel detectors

    Science.gov (United States)

    Gehrke, T.; Amato, C.; Berke, S.; Martišíková, M.

    2018-02-01

    Ion-beam radiography (iRAD) could potentially improve the quality control of ion-beam therapy. The main advantage of iRAD is the possibility to directly measure the integrated stopping power. Until now there is no clinical implementation of iRAD. Topics of ongoing research include developing dedicated detection systems to achieve the desired spatial resolution (SR) and investigating different ion types as imaging radiation. This work focuses on the theoretical and experimental comparison of proton (pRAD) and helium-beam radiography (αRAD). The experimental comparison was performed with an in-house developed detection system consisting of silicon pixel detectors. This system enables the measurement of energy deposition of single ions, their tracking, and the identification of the ion type, which is important for αRAD due to secondary fragments. A 161 mm-thick PMMA phantom with an air gap of 1 mm placed at different depths was imaged with a 168 MeV u-1 proton/helium-ion beam at the Heidelberg ion-beam therapy center. The image quality in terms of SR and contrast-to-noise ratio (CNR) was evaluated. After validating MC simulations against experiments, pRAD and αRAD were compared to carbon-beam radiography (cRAD) in simulations. The theoretical prediction that the CNR of pRAD and αRAD is equal at similar imaging doses was experimentally confirmed. The measured SR of αRAD was 55% better compared to pRAD. The simulated cRads showed the expected improvement in SR and the decreased CNR at the same dose compared to the αRads, however only at dose levels exceeding typical doses of diagnostic x-ray projections. For clinically applicable dose levels, the cRads suffered from an insufficient number of carbon ions per pixel (220 μm  ×  220 μm). In conclusion, it was theoretically and experimentally shown that αRAD provides a better SR than pRAD without any disadvantages concerning the CNR. Using carbon ions instead of helium ions leads to a better SR at the

  7. Study of a silicon telescope for solid state microdosimetry: Preliminary measurements at the therapeutic proton beam line of CATANA

    International Nuclear Information System (INIS)

    Agosteo, S.; Cirrone, G.A.P.; Colautti, P.; Cuttone, G.; D'Angelo, G.; Fazzi, A.; Introini, M.V.; Moro, D.; Pola, A.; Varoli, V.

    2010-01-01

    A monolithic silicon device consisting of a matrix of micrometric cylindrical diodes (about 2 μm in thickness and 9 μm in diameter) coupled to a residual energy measurement stage E (about 500 μm in thickness) was proposed and studied for assessing the quality of a therapeutic proton beam. The device was placed at different depths inside a polymethyl-methacrylate phantom and irradiated with a modulated 62 MeV proton beam at the Centro di AdroTerapia e Applicazioni Nucleari Avanzate (CATANA) of the Laboratori Nazionali del Sud (LNS, Catania, Italy) of the Istituto Nazionale di Fisica Nucleare (INFN). At each phantom depth, the energy imparted in the two detector stages was measured event-by-event in coincidence mode. The distributions of the energy imparted to the cylindrical diodes were corrected for tissue-equivalence by applying an optimized procedure. In order to perform a comparison with literature data measured with a cylindrical TEPC, the distributions derived with the silicon detector were corrected for shape-equivalence. The agreement with the microdosimetric spectra measured with the TEPC was satisfactory above the detection limit imposed by the electronic noise of the silicon-based system.

  8. Study of a silicon telescope for solid state microdosimetry: Preliminary measurements at the therapeutic proton beam line of CATANA

    Energy Technology Data Exchange (ETDEWEB)

    Agosteo, S. [Politecnico di Milano, Dipartimento di Energia, Sezione di Ingegneria Nucleare, via Ponzio 34/3, 20133 Milano (Italy); Istituto Nazionale di Fisica Nucleare, Sezione di Milano, via Celoria 16, 20133 Milano (Italy); Cirrone, G.A.P. [Istituto Nazionale di Fisica Nucleare, Laboratori Nazionali del Sud, via S. Sofia 44, 95123 Catania (Italy); Colautti, P. [Istituto Nazionale di Fisica Nucleare, Laboratori Nazionali di Legnaro, viale dell' Universita 2, 35020 Legnaro (Italy); Cuttone, G. [Istituto Nazionale di Fisica Nucleare, Laboratori Nazionali del Sud, via S. Sofia 44, 95123 Catania (Italy); D' Angelo, G.; Fazzi, A.; Introini, M.V. [Politecnico di Milano, Dipartimento di Energia, Sezione di Ingegneria Nucleare, via Ponzio 34/3, 20133 Milano (Italy); Istituto Nazionale di Fisica Nucleare, Sezione di Milano, via Celoria 16, 20133 Milano (Italy); Moro, D. [Istituto Nazionale di Fisica Nucleare, Laboratori Nazionali di Legnaro, viale dell' Universita 2, 35020 Legnaro (Italy); Pola, A., E-mail: andrea.pola@polimi.i [Politecnico di Milano, Dipartimento di Energia, Sezione di Ingegneria Nucleare, via Ponzio 34/3, 20133 Milano (Italy); Istituto Nazionale di Fisica Nucleare, Sezione di Milano, via Celoria 16, 20133 Milano (Italy); Varoli, V. [Politecnico di Milano, Dipartimento di Energia, Sezione di Ingegneria Nucleare, via Ponzio 34/3, 20133 Milano (Italy); Istituto Nazionale di Fisica Nucleare, Sezione di Milano, via Celoria 16, 20133 Milano (Italy)

    2010-12-15

    A monolithic silicon device consisting of a matrix of micrometric cylindrical diodes (about 2 {mu}m in thickness and 9 {mu}m in diameter) coupled to a residual energy measurement stage E (about 500 {mu}m in thickness) was proposed and studied for assessing the quality of a therapeutic proton beam. The device was placed at different depths inside a polymethyl-methacrylate phantom and irradiated with a modulated 62 MeV proton beam at the Centro di AdroTerapia e Applicazioni Nucleari Avanzate (CATANA) of the Laboratori Nazionali del Sud (LNS, Catania, Italy) of the Istituto Nazionale di Fisica Nucleare (INFN). At each phantom depth, the energy imparted in the two detector stages was measured event-by-event in coincidence mode. The distributions of the energy imparted to the cylindrical diodes were corrected for tissue-equivalence by applying an optimized procedure. In order to perform a comparison with literature data measured with a cylindrical TEPC, the distributions derived with the silicon detector were corrected for shape-equivalence. The agreement with the microdosimetric spectra measured with the TEPC was satisfactory above the detection limit imposed by the electronic noise of the silicon-based system.

  9. Effects of radiation damage on the silicon lattice

    Science.gov (United States)

    Dumas, Katherine A.; Lowry, Lynn; Russo, O. Louis

    1987-01-01

    Silicon was irradiated with both proton and electron particle beams in order to investigate changes in the structural and optical properties of the lattice as a result of the radiation damage. Lattice expansions occurred when large strain fields (+0.34 percent) developed after 1- and 3-MeV proton bombardment. The strain was a factor of three less after 1-MeV electron irradiation. Average increases of approximately 22 meV in the 3.46-eV interband energy gap and 14 meV in the Lorentz broadening parameter were measured after the electron irradiation.

  10. SU-E-J-91: Novel Epitaxial Silicon Array for Quality Assurance in Photon and Proton Therapy

    International Nuclear Information System (INIS)

    Talamonti, C; Zani, M; Scaringella, M; Bruzzi, M; Bucciolini, M; Menichelli, D; Friedl, F

    2014-01-01

    Purpose: to demonstrate suitability of a novel silicon array for measuring the dose properties of highly conformal photon and proton beams. Methods: prototype under test is a 24cm long linear array prototype, although the underlying technology is suitable to construct 2D arrays as well. It is based on a 64pixels monolithic sensor with 1mm pixel pitch, made of epitaxial ptype silicon. Thanks to design modularity, more sensors can be placed side by side without breaking pixel pitch. Flattened and unflattened photon beams, as well as proton radiation from a cyclotron in pencil beam scanning mode, were considered. Measurements of beam characteristics as percentage depth doses, dose profiles, output factors and energy response, which are necessary to deliver radiation with high precision and reliability, were performed. Results: Dose rate independence with photons was verified in the dose per pulse range 0.03 to 2mGy. Results clearly indicate nondependence of the detector sensitivity both for flattened and unflattened beams, with a variation of at most 0.5percentage. OFs were obtained for field with a lateral size ranging from 0.8cm to 16cm and the results are in good agreement with ion chamber A1SL, max difference less than 1.5percentage. Field sizes and beam penumbra were measured and compared to EBT film results. Concerning proton beams, sensitivity independence on dose rate was verified by changing the beam current in the interval 2-130Gy/s. Field sizes and beam penumbra measurements are in agreement with data taken with a scintillating 2D array with 0.5mm resolution IBA Lynx, and a better penumbra definition than an array of ionization chambers IBA MatriXX is reached. Conclusion: The device is a novel and valuable tool for QA both for photon and proton dose delivery. All measurements demonstrated its capability to measure with high spatial resolution many crucial properties of the RT beam

  11. SU-E-J-91: Novel Epitaxial Silicon Array for Quality Assurance in Photon and Proton Therapy

    Energy Technology Data Exchange (ETDEWEB)

    Talamonti, C; Zani, M; Scaringella, M; Bruzzi, M; Bucciolini, M [University of Florence, Firenze (Italy); Menichelli, D; Friedl, F [IBA Dosimetry, Schwarzenbruck, Bavaria (Germany)

    2014-06-01

    Purpose: to demonstrate suitability of a novel silicon array for measuring the dose properties of highly conformal photon and proton beams. Methods: prototype under test is a 24cm long linear array prototype, although the underlying technology is suitable to construct 2D arrays as well. It is based on a 64pixels monolithic sensor with 1mm pixel pitch, made of epitaxial ptype silicon. Thanks to design modularity, more sensors can be placed side by side without breaking pixel pitch. Flattened and unflattened photon beams, as well as proton radiation from a cyclotron in pencil beam scanning mode, were considered. Measurements of beam characteristics as percentage depth doses, dose profiles, output factors and energy response, which are necessary to deliver radiation with high precision and reliability, were performed. Results: Dose rate independence with photons was verified in the dose per pulse range 0.03 to 2mGy. Results clearly indicate nondependence of the detector sensitivity both for flattened and unflattened beams, with a variation of at most 0.5percentage. OFs were obtained for field with a lateral size ranging from 0.8cm to 16cm and the results are in good agreement with ion chamber A1SL, max difference less than 1.5percentage. Field sizes and beam penumbra were measured and compared to EBT film results. Concerning proton beams, sensitivity independence on dose rate was verified by changing the beam current in the interval 2-130Gy/s. Field sizes and beam penumbra measurements are in agreement with data taken with a scintillating 2D array with 0.5mm resolution IBA Lynx, and a better penumbra definition than an array of ionization chambers IBA MatriXX is reached. Conclusion: The device is a novel and valuable tool for QA both for photon and proton dose delivery. All measurements demonstrated its capability to measure with high spatial resolution many crucial properties of the RT beam.

  12. Neutron energy spectra produced by α-bombardment of light elements in thick targets

    International Nuclear Information System (INIS)

    Jacobs, G.J.H.

    1982-01-01

    The aim of the work, presented in this thesis, is to determine energy spectra of neutrons produced by α-particle bombardment of thick targets containing light elements. These spectra are required for nuclear waste management. The set-up of the neutron spectrometer is described, and its calibration discussed. Absolute efficiencies were determined at various neutron energies, using monoenergetic neutrons produced with the Van de Graaff accelerator in pulsed mode. The additional calibration of the neutron spectrometer as proton-recoil spectrometer was carried out primarily for future applications in measurements where no pulsed neutron source is available or the neutron flux density is too low. The basis for an accurate uncertainty analysis is made by the determination of the covariance matrix for the uncertainties in the efficiencies. The determination of the neutron energy spectra from time-of-flight and from proton-recoil measurements is described. A comparison of the results obtained from the two different types of measurements is made. The experimentally determined spectra were compared with spectra calculated from stopping powers and theoretically determined cross sections. These cross sections were calculated from optical model parameters and level parameters using the Hauser-Feshbach formalism. Measurements were carried out on thick targets of silicon, aluminium, magnesium, carbon, boron nitride, calcium fluoride, aluminium oxide, silicon oxide and uranium oxide at four different α-particle energies. (Auth.)

  13. Energy loss distributions of 7 TeV protons channeled in a bent silicon crystals

    Directory of Open Access Journals (Sweden)

    Stojanov Nace

    2013-01-01

    Full Text Available The energy loss distributions of relativistic protons axially channeled through the bent Si crystals, with the constant curvature radius, R = 50 m, are studied here. The proton energy is 7 TeV and the thickness of the crystal is varied from 1 mm to 5 mm, which corresponds to the reduced crystal thickness, L, from 2.1 to 10.6, respectively. The proton energy was chosen in accordance with the large hadron collider project, at the European Organization for Nuclear Research, in Geneva, Switzerland. The energy loss distributions of the channeled protons were generated by the computer simulation method using the numerical solution of the proton equations of motion in the transverse plane. Dispersion of the proton scattering angle caused by its collisions with the crystal’s electrons was taken into account. [Projekat Ministarstva nauke Republike Srbije, br. III 45006

  14. A model for the build-up of disordered material in ion bombarded Si

    International Nuclear Information System (INIS)

    Nelson, R.S.

    1977-01-01

    A new model based on experimental observation is developed for the build-up of disordered material in ion bombarded silicon. The model assumes that disordered zones are created in a background of migrating point defects, these zones then act as neutral sinks for such defects which interact with the zones and cause recrystallization. A simple steady state rate theory is developed to describe the build-up of disordered material with ion dose as a function of temperature. In general the theory predicts two distinct behaviour patterns depending on the temperature and the ion mass, namely a linear build-up with dose to complete disorder for heavy bombarding ions and a build-up to saturation at a relatively low level for light ions such as protons. However, in some special circumstances a transition region is predicted where the build-up of disorder approximately follows a (dose)sup(1/2) relationship before reverting to a linear behaviour at high dose. (author)

  15. Radiation damage and defect behavior in proton irradiated lithium-counterdoped n/sup +/p silicon solar cells

    International Nuclear Information System (INIS)

    Stupica, J.; Goradia, C.; Swartz, C.K.; Weinberg, I.

    1987-01-01

    Two lithium-counterdoped n/sup +/p silicon solar cells with different lithium concentrations were irradiated by 10 MeV protons. Cell performance was measured as a function of fluence, and it was found that the cell with the highest concentration of lithium had the higher radiation resistance. Deep level defects were studied using deep level transient spectroscopy which yielded two defects that were lithium related. Relating the defect energy levels obtained from this study under 10 MeV protons, with an earlier work using 1 MeV electron irradiations shows no correlation of the defect energy levels. There is one marked comparison though. The absence of the boron interstitial-oxygen interstitial defect. This consistency strengthens the belief that lithium interacts with oxygen to prevent the formation of the boron interstitial-oxygen interstitial defect. The present results indicate that, in general, addition of lithium in small amounts to the p-base of a boron doped silicon solar cell such that the base remains p-type, tends to increase the radiation resistance of the cell

  16. Anomalous heat evolution of deuteron implanted Al on electron bombardment

    International Nuclear Information System (INIS)

    Kamada, K.; Kinoshita, H.; Takahashi, H.

    1994-05-01

    Anomalous heat evolution was observed in deuteron implanted Al foils on 175 keV electron bombardment. Local regions with linear dimension of several 100nm showed simultaneous transformation from single crystalline to polycrystalline structure instantaneously on the electron bombardment, indicating the temperature rise up to more than melting point of Al from room temperature. The amount of energy evolved was more than 180 MeV for each transformed region. The transformation was never observed in proton implanted Al foils. The heat evolution was considered due to a nuclear reaction in D 2 molecular collections. (author)

  17. Silicon-based photonic crystals fabricated using proton beam writing combined with electrochemical etching method.

    Science.gov (United States)

    Dang, Zhiya; Breese, Mark Bh; Recio-Sánchez, Gonzalo; Azimi, Sara; Song, Jiao; Liang, Haidong; Banas, Agnieszka; Torres-Costa, Vicente; Martín-Palma, Raúl José

    2012-07-23

    A method for fabrication of three-dimensional (3D) silicon nanostructures based on selective formation of porous silicon using ion beam irradiation of bulk p-type silicon followed by electrochemical etching is shown. It opens a route towards the fabrication of two-dimensional (2D) and 3D silicon-based photonic crystals with high flexibility and industrial compatibility. In this work, we present the fabrication of 2D photonic lattice and photonic slab structures and propose a process for the fabrication of 3D woodpile photonic crystals based on this approach. Simulated results of photonic band structures for the fabricated 2D photonic crystals show the presence of TE or TM gap in mid-infrared range.

  18. Surface roughening under ion bombardment

    International Nuclear Information System (INIS)

    Bhatia, C.S.

    1982-01-01

    Ion bombardment can cause roughening of a surface. Inadequate step coverage and poor adhesion of films on such surfaces are of concern. An extreme case of surface roughening results in cone formation under ion bombardment. The results of the investigation, using scanning electron microscopy, is discussed in terms of the role of (a) embedded particles, (b) impurities and (c) surface migration in cone formation on the target surface. (Auth.)

  19. The cryogenic silicon Beam Tracker of NA60 for heavy ion and proton beams

    International Nuclear Information System (INIS)

    Rosinsky, P.; Borer, K.; Casagrande, L.; Devaux, A.; Granata, V.; Guettet, N.; Hess, M.; Heuser, J.; Jarron, P.; Li, Z.; Lourenco, C.; Manso, F.; Niinikoski, T.O.; Palmieri, V.G.; Radermacher, E.; Shahoyan, R.; Sonderegger, P.

    2003-01-01

    The cryogenic silicon Beam Tracker of NA60 is the first detector based on the Lazarus effect used in a high-energy physics experiment. It employs single-sided silicon strip sensors of 50 μm pitch operated at a temperature of 130 K. Two tracking stations determine the transverse coordinates of the interaction point at the target with 20 μm resolution, to improve the determination of the offset of secondary vertices. This impact parameter measurement allows NA60 to distinguish between prompt dimuons and muon pairs from D-meson decays. The detector concept and technical feasibility have been demonstrated in beam time periods between 1999 and 2002

  20. The effect of low energy protons on silicon solar cells with simulated coverglass cracks

    Science.gov (United States)

    Gasner, S.; Anspaugh, B.; Francis, R.; Marvin, D.

    1991-01-01

    Results of a series of low-energy proton (LEP) tests are presented. The purpose of the tests was to investigate the effect of low-energy protons on the electrical performance of solar cells with simulated cracked covers. The results of the tests were then related to the space environment. A matrix of LEP tests was set up using solar cells with simulated cracks to determine the effect on electrical performance as a function of fluence, energy, crack width, coverglass adhesive shielding, crack location, and solar cell size. The results of the test were, for the most part, logical, and consistent.

  1. Radiation damage and defect behavior in proton irradiated lithium-counterdoped n+p silicon solar cells

    Science.gov (United States)

    Stupica, John; Goradia, Chandra; Swartz, Clifford K.; Weinberg, Irving

    1987-01-01

    Two lithium-counterdoped n+p silicon solar cells with different lithium concentrations were irradiated by 10-MeV protons. Cell performance was measured as a function of fluence, and it was found that the cell with the highest concentration of lithium had the highest radiation resistance. Deep level transient spectroscopy which showed two deep level defects that were lithium related. Relating the defect energy levels obtained from this study with those from earlier work using 1-MeV electron irradiation shows no correlation of the defect energy levels. There is one marked similarity: the absence of the boron-interstitial-oxygen-interstitial defect. This consistency strengthens the belief that lithium interacts with oxygen to prevent the formation of the boron interstitial-oxygen interstitial defect. The results indicate that, in general, addition of lithium in small amounts to the p-base of a boron doped silicon solar cell such that the base remains p-type, tends to increase the radiation resistance of the cell.

  2. The annealing of interstitial carbon atoms in high-resistivity n-type silicon after proton irradiation

    CERN Document Server

    Kuhnke, M; Lindström, G

    2002-01-01

    The annealing of interstitial carbon C sub i after 7-10 MeV and 23 GeV proton irradiations at room temperature in high-resistivity n-type silicon is investigated. Deep level transient spectroscopy is used to determine the defect parameters. The annealing characteristics of the impurity defects C sub i , C sub i C sub s , C sub i O sub i and VO sub i suggest that the mobile C sub i atoms are also captured at divacancy VV sites at the cluster peripheries and not only at C sub s and O sub i sites in the silicon bulk. The deviation of the electrical filling characteristic of C sub i from the characteristic of a homogeneously distributed defect can be explained by an aggregation of C sub i atoms in the environment of the clusters. The capture rate of electrons into defects located in the cluster environment is reduced due to a positive space charge region surrounding the negatively charged cluster core. The optical filling characteristic of C sub i suggests that the change of the triangle-shaped electric field dis...

  3. Investigation of proton spin relaxation in water with dispersed silicon nanoparticles for potential magnetic resonance imaging applications

    Science.gov (United States)

    Kargina, Yu. V.; Gongalsky, M. B.; Perepukhov, A. M.; Gippius, A. A.; Minnekhanov, A. A.; Zvereva, E. A.; Maximychev, A. V.; Timoshenko, V. Yu.

    2018-03-01

    Porous and nonporous silicon (Si) nanoparticles (NPs) prepared by ball-milling of electrochemically etched porous Si layers and crystalline Si wafers were studied as potential agents for enhancement of the proton spin relaxation in aqueous media. While nonporous Si NPs did not significantly influence the spin relaxation, the porous ones resulted in strong shortening of the transverse relaxation times. In order to investigate an effect of the electron spin density in porous Si NPs on the proton spin relaxation, we use thermal annealing of the NPs in vacuum or in air. The transverse relaxation rate of about 0.5 l/(g s) was achieved for microporous Si NPs, which were thermally annealing in vacuum to obtain the electron spin density of the order of 1017 g-1. The transverse relaxation rate was found to be almost proportional to the concentration of porous Si NPs in the range from 0.1 to 20 g/l. The obtained results are discussed in view of possible biomedical applications of Si NPs as contrast agents for magnetic resonance imaging.

  4. Effects of proton irradiation and temperature on 1 ohm-cm and 10 ohm-cm silicon solar cells

    Science.gov (United States)

    Nicoletta, C. A.

    1973-01-01

    The 1 ohm-cm and 10 ohm-cm silicon solar cells were exposed to 1.0 MeV protons at a fixed flux of 10 to the 9th power P/sq cm-sec and fluences of 10 to the 10th power, 10 to the 11th power, 10 to the 12th power and 3 X 10 to the 12th power P/sq cm. I-V curves of the cells were made at room temperature, 65 C and 165 C after each irradiation. A value of 139.5 mw/sq cm was taken as AMO incident energy rate per unit area. Degradation occurred for both uncovered 1 ohm-cm and 10 ohm-cm cells. Efficiencies are generally higher than those of comparable U.S. cells tested earlier. Damage (loss in maximum power efficiency) with proton fluence is somewhat higher for 10 ohm-cm cells, measured at the three temperatures, for fluences above 2 X 10 to the 11th power P/sq cm. Cell efficiency, as expected, changes drastically with temperature.

  5. Silicon hydride nanocrystals as catalysts for proton production in water-organic liquid mixtures

    KAUST Repository

    Chaieb, Saharoui; Holt, Christopher R.

    2014-01-01

    gas for fuel cells and other small devices. In fuel cells the production of protons may be bypassed, and an oxidant such as permanganate or oxygen from air may be used to drive the fuel cells. In such an embodiment, an intermediate reaction may

  6. Ion bombardment modification of surfaces

    International Nuclear Information System (INIS)

    Auciello, O.

    1984-01-01

    An historical overview of the main advances in the understanding of bombardment-induced surface topography is presented. The implantation and sputtering mechanisms which are relevant to ion bombardment modification of surfaces and consequent structural, electronic and compositional changes are described. Descriptions of plasma and ion-beam sputtering-induced film formation, primary ion-beam deposition, dual beam techniques, cluster of molecule ion-beam deposition, and modification of thin film properties by ion bombardment during deposition are presented. A detailed account is given of the analytical and computational modelling of topography from the viewpoint of first erosion theory. Finally, an account of the possible application and/or importance of textured surfaces in technologies and/or experimental techniques not considered in previous chapters is presented. refs.; figs.; tabs

  7. Simulation of space protons influence on silicon semiconductor devices using gamma-neutron irradiation

    International Nuclear Information System (INIS)

    Zhukov, Y.N.; Zinchenko, V.F.; Ulimov, V.N.

    1999-01-01

    In this study the authors focus on the problems of simulating the space proton energy spectra under laboratory gamma-neutron radiation tests of semiconductor devices (SD). A correct simulation of radiation effects implies to take into account and evaluate substantial differences in the processes of formation of primary defects in SD in space environment and under laboratory testing. These differences concern: 1) displacement defects, 2) ionization defects and 3) intensity of radiation. The study shows that: - the energy dependence of nonionizing energy loss (NIEL) is quite universal to predict the degradation of SD parameters associated to displacement defects, and - MOS devices that are sensitive to ionization defects indicated the same variation of parameters under conditions of equality of ionization density generated by protons and gamma radiations. (A.C.)

  8. High total dose proton irradiation effects on silicon NPN rf power transistors

    International Nuclear Information System (INIS)

    Bharathi, M. N.; Praveen, K. C.; Prakash, A. P. Gnana; Pushpa, N.

    2014-01-01

    The effects of 3 MeV proton irradiation on the I-V characteristics of NPN rf power transistors were studied in the dose range of 100 Krad to 100 Mrad. The different electrical characteristics like Gummel, current gain and output characteristics were systematically studied before and after irradiation. The recovery in the I-V characteristics of irradiated NPN BJTs were studied by isochronal and isothermal annealing methods

  9. High total dose proton irradiation effects on silicon NPN rf power transistors

    Energy Technology Data Exchange (ETDEWEB)

    Bharathi, M. N.; Praveen, K. C.; Prakash, A. P. Gnana, E-mail: gnanaprakash@physics.uni-mysore.ac.in [Department of Studies in Physics, University of Mysore, Manasagangotri, Mysore-570006, Karnataka (India); Pushpa, N. [Department of PG Studies in Physics, JSS College, Ooty Road, Mysore-570025, Karnataka (India)

    2014-04-24

    The effects of 3 MeV proton irradiation on the I-V characteristics of NPN rf power transistors were studied in the dose range of 100 Krad to 100 Mrad. The different electrical characteristics like Gummel, current gain and output characteristics were systematically studied before and after irradiation. The recovery in the I-V characteristics of irradiated NPN BJTs were studied by isochronal and isothermal annealing methods.

  10. Radiation-induced conductivity of doped silicon in response to photon, proton and neutron irradiation

    International Nuclear Information System (INIS)

    Kishimoto, N.; Amekura, H.; Plaksin, O.A.; Stepanov, V.A.

    2000-01-01

    The opto-electronic performance of semiconductors during reactor operation is restricted by radiation-induced conductivity (RIC) and the synergistic effects of neutrons/ions and photons. The RICs of Si due to photons, protons and pulsed neutrons have been evaluated, aiming at radiation correlation. Protons of 17 MeV with an ionizing dose rate of 10 3 Gy/s and/or photons (hν=1.3 eV) were used to irradiate impurity-doped Si (2x10 16 B atoms/cm 3 ) at 300 and 200 K. Proton-induced RIC (p-RIC) and photoconductivity (PC) were intermittently detected in an accelerator device. Neutron-induced RIC (n-RIC) was measured for the same Si in a pulsed fast-fission reactor, BARS-6, with a 70-μs pulse of 2x10 12 n/cm 2 (E>0.01 MeV) and a dose rate of up to 6x10 5 Gy/s. The neutron irradiation showed a saturation tendency in the flux dependence at 300 K due to the strong electronic excitation. Normalization of the electronic excitation, including the pulsed regime, gave a fair agreement among the different radiation environments. Detailed comparison among PC, p-RIC and n-RIC is discussed in terms of radiation correlation including the in-pile condition

  11. High-energy and high-fluence proton irradiation effects in silicon solar cells

    International Nuclear Information System (INIS)

    Yamaguchi, M.; Taylor, S.J.; Yang, M.; Matsuda, S.; Kawasaki, O.; Hisamatsu, T.

    1996-01-01

    We have examined proton irradiation damage in high-energy (1 endash 10 MeV) and high-fluence (approx-gt 10 13 cm -2 ) Si n + -p-p + structure space solar cells. Radiation testing has revealed an anomalous increase in short-circuit current I sc followed by an abrupt decrease and cell failure, induced by high-fluence proton irradiation. We propose a model to explain these phenomena by expressing the change in carrier concentration p of the base region as a function of the proton fluence in addition to the well-known model where the short-circuit current is decreased by minority-carrier lifetime reduction after irradiation. The reduction in carrier concentration due to majority-carrier trapping by radiation-induced defects has two effects. First, broadening of the depletion layer increases both the generation endash recombination current and also the contribution of the photocurrent generated in this region to the total photocurrent. Second, the resistivity of the base layer is increased, resulting in the abrupt decrease in the short circuit current and failure of the solar cells. copyright 1996 American Institute of Physics

  12. High-efficiency deflection of high energy protons due to channeling along the 〈110〉 axis of a bent silicon crystal

    Directory of Open Access Journals (Sweden)

    W. Scandale

    2016-09-01

    Full Text Available A deflection efficiency of about 61% was observed for 400 GeV/c protons due to channeling, most strongly along the 〈110〉 axis of a bent silicon crystal. It is comparable with the deflection efficiency in planar channeling and considerably larger than in the case of the 〈111〉 axis. The measured probability of inelastic nuclear interactions of protons in channeling along the 〈110〉 axis is only about 10% of its amorphous level whereas in channeling along the (110 planes it is about 25%. High efficiency deflection and small beam losses make this axial orientation of a silicon crystal a useful tool for the beam steering of high energy charged particles.

  13. Effect of front and rear incident proton irradiation on silicon solar cells

    Science.gov (United States)

    Anspaugh, Bruce; Kachare, Ram

    1987-01-01

    Four solar cell types of current manufacture were irradiated through the front and rear surfaces with protons in the energy range between 1 and 10 MeV. The solar cell parameters varied for this study were cell thickness and back surface field (BSF) vs. no BSF. Some cells were irradiated at normal incidence and an equal number were irradiated with simulated isotropic fluences. The solar cell electrical characteristics were measured under simulated AM0 illumination after each fluence. Using the normal incidence data, proton damage coefficients were computed for all four types of cells for both normal and omnidirectional radiation fields. These were found to compare well with the omnidirectional damage coefficients derived directly from the rear-incidence radiation data. Similarly, the rear-incidence omnidirectional radiation data were used to compute appropriate damage coefficients. A method for calculating the effect of a spectrum of energies is derived from these calculations. It is suitable for calculating the degradation of cells in space when they have minimal rear-surface shielding.

  14. Bragg-case synchrotron section topography of silicon implanted with high-energy protons and α particles

    International Nuclear Information System (INIS)

    Wieteska, K.; Wierzchowski, W.; Graeff, W.

    1997-01-01

    Back reflection section topography using white-beam synchrotron radiation has been applied for the investigation of silicon implanted with 1 and 1.6 MeV protons and 4.8 MeV α particles. The beam width was limited to 5 μm, and a series of spots in the vicinity of a centrally adjusted reflection were indexed and analysed. The back-reflection section pattern of implanted crystals usually exhibits fringes corresponding to the reflection from the surface and a series of fringes corresponding to the rear region of the shot-through layer, the destroyed layer and the bulk. The patterns were used for direct evaluation of ion ranges and thicknesses of the shot-through layer. The overall characteristics of the obtained patterns were successfully reproduced in simulations based on numerical integration of the Takagi-Taupin equations. The agreement between the simulation and experiment proves that the lattice-parameter depth-distribution profiles can be assumed to be proportional to interstitial-vacancy distributions obtained using the Monte Carlo method from the Biersack-Ziegler theory. The simulation also reproduced interference tails observed in some section patterns. It was found that these tails are caused by the ion-dose change along the beam and they were probably formed due to the interference between the radiation reflected from the bulk and those rays reflected by the rear region of the shot-through layer. (orig.)

  15. Technology Development on P-type Silicon Strip Detectors for Proton Beam Dosimetry

    International Nuclear Information System (INIS)

    Aouadi, K.; Bouterfa, M.; Delamare, R.; Flandre, D.; Bertrand, D.; Henry, F.

    2013-06-01

    In this paper, we present a technology for the fabrication of n-in-p silicon strip detectors, which is based on the use of Al 2 O 3 oxide compared to p-spray insulation scheme. This technology has been developed using the best technological parameters deduced from simulations, particularly for the p-spray implantation parameters. Different wafers were processed towards the fabrication of the radiation detectors with p-spray insulation and Al 2 O 3 . The evaluation of the prototype detectors has been carried out by performing the electrical characterization of the devices through the measurement of current-voltage and capacitance-voltage characteristics, as well as the measurement of detection response under radiation. The results of electrical measurements indicate that detectors fabricated with Al 2 O 3 exhibit a dark current several times lower than p-spray detectors and show an excellent electrical insulation between strips with a higher inter-strip resistance. Response of Al 2 O 3 strip detector under radiation has been found better. The resulting improved output signal dynamic range finally makes the use of Al 2 O 3 more attractive. (authors)

  16. Influence of radiation-induced segregation on ductility of a nickel-silicon alloy

    International Nuclear Information System (INIS)

    Packan, N.H.; Schroeder, H.; Kesternich, W.

    1986-01-01

    Flat tensile specimens 60 μm thick of Ni-8 at. % Si were irradiated to bulk damage levels of 0.1 to 0.3 dpa with either 7 MeV protons or 28 MeV alpha particles at 750 K. The alpha bombarded specimens incurred 750 at. ppM He per 0.1 dpa in the course of their damage-generating irradiation. Radiation-induced silicon segregation gave rise to Ni 3 Si layers at internal and external surfaces. Postirradiation tensile tests conducted either at 300 K or 720 K revealed fully ductile (chisel-edged) transgranular fracture profiles. There were no significant differences between the proton-bombarded specimens and the unbombarded controls, both exhibiting >25% total elongations, while the alpha-bombarded specimens showed ductile fractures with somewhat lower (17 to 18%) elongation values probably due to hardening caused by small helium bubbles. Certain specimens that were preimplanted with 250 to 1000 at. ppM He at 970 K to encourage intergranular failure and expose grain boundaries did fail intergranularly. It is concluded that radiation-induced silicon segregation does not cause intrinsic embrittlement

  17. Neutron spectrometry with a monolithic silicon telescope.

    Science.gov (United States)

    Agosteo, S; D'Angelo, G; Fazzi, A; Para, A Foglio; Pola, A; Zotto, P

    2007-01-01

    A neutron spectrometer was set-up by coupling a polyethylene converter with a monolithic silicon telescope, consisting of a DeltaE and an E stage-detector (about 2 and 500 microm thick, respectively). The detection system was irradiated with monoenergetic neutrons at INFN-Laboratori Nazionali di Legnaro (Legnaro, Italy). The maximum detectable energy, imposed by the thickness of the E stage, is about 8 MeV for the present detector. The scatter plots of the energy deposited in the two stages were acquired using two independent electronic chains. The distributions of the recoil-protons are well-discriminated from those due to secondary electrons for energies above 0.350 MeV. The experimental spectra of the recoil-protons were compared with the results of Monte Carlo simulations using the FLUKA code. An analytical model that takes into account the geometrical structure of the silicon telescope was developed, validated and implemented in an unfolding code. The capability of reproducing continuous neutron spectra was investigated by irradiating the detector with neutrons from a thick beryllium target bombarded with protons. The measured spectra were compared with data taken from the literature. Satisfactory agreement was found.

  18. Confirmatory experiments for the United States Department of Energy Accelerator Production of Tritium Program: Neutron, triton and radionuclide production by thick targets of lead and tungsten bombarded by 800 MeV protons

    International Nuclear Information System (INIS)

    Lisowski, P.W.; Cappiello, M.; Ullmann, J.L.; Gavron, A.; King, J.D.; Laird, R.; Mayo, D.; Waters, L.; Zoeller, C.; Staples, P.

    1994-01-01

    Neutron and Triton Production by 800 MeV Protons: The experiments presented in this report were performed in support of the Accelerator Production of Tritium (APT) project at the Los Alamos Weapons Neutron Research (WNR) facility in order to provide data to benchmark and validate physics simulations used in the APT target/blanket design. An experimental apparatus was built that incorporated many of the features of the neutron source region of the 3 He target/blanket. Those features included a tungsten neutron source, flux traps, neutron moderator, lead backstop, lead multiplying annulus, neutron absorbing blanket and a combination neutron de-coupler and tritium producing gas ( 3 He). The experiments were performed in two separate proton irradiations each with approximately 100 nA-hr of 800 MeV protons. The first irradiation was made with a small neutron moderating blanket, allowing the authors to measure tritium production in the 3 He gas by sampling, and counting the amount of tritium. The second irradiation was performed with a large neutron moderating blanket (light water with a 1% manganese sulfate solution) that allowed them to measure both the tritium production in the central region and the total neutron production. The authors did this by sampling and counting the tritium produced and by measuring the activation of the manganese solution. Results of the three tritium production measurements show large disagreements with each other and therefore with the values predicted using the LAHET-MCNP code system. The source of the discrepancies may lie with the sampling system or adsorption on the tungsten surfaces. The authors discuss tests that may resolve that issue. The data for the total neutron production measurement is much more consistent. Those results show excellent agreement between calculation and experiment

  19. Measurement of excitation yields of low energy prompt γ-ray from proton bombardment of Cr-foils with energies ranging between 1.0 and 3.0 MeV

    International Nuclear Information System (INIS)

    Goncharov, A.

    2014-01-01

    The goal of this work is measurement of differential cross sections for the production of 378 keV γ-rays from the reactions 52 Cr(p,γ1) 53 Mn and 53 Cr(p,nγ1) 53 Mn for proton energies ranging between 1.0 and 3.0 MeV at the laboratory angle of 90° using foils with thickness ∼1.9×10 18 at/cm 2 (∼ 0.23 μm) of nat Cr.

  20. Neutron production in bombardments of thin and thick W, Hg, Pb targets by 0.4, 0.8, 1.2, 1.8 and 2.5 GeV protons

    International Nuclear Information System (INIS)

    Letrourneau, A.; Galin, J.; Goldenbaum, F.; Lott, B.; Peghaire, A.; Enke, M.; Hilscher, D.; Jahnke, U.; Nuenighoff, K.; Filges, D.; Neef, R.D.; Paul, N.; Schaal, H.; Sterzenbach, G.; Tietze, A.

    2000-05-01

    Neutron experimental data relevant to the design of the target of neutron spallation sources are presented and discussed. The data include the reaction cross sections for W, Hg and Pb investigated with 0.4, 0.8, 1.2, 1.8 and 2.5 GeV proton beams as well as the neutron production, neutron multiplicity distribution, as determined event per event using a high efficiency detector. The production as a function of target material is investigated for both thin (with a single reaction) and thick targets (multiple reactions). Comparisons are made with the predictions of a high energy transport code. (authors)

  1. Ion bombardment modification of surfaces

    International Nuclear Information System (INIS)

    Auciello, O.

    1984-01-01

    Ion bombardment-induced modification of surfaces may be considered one of the significant scientific and technological developments of the last two decades. The understanding acquired concerning the underlying mechanisms of several phenomena occurring during ion-surface interactions has led to applications within different modern technologies. These include microelectronics, surface acoustical and optical technologies, solar energy conversion, thin film technology, ion implantation metallurgy, nuclear track technology, thermonuclear fusion, vacuum technology, cold welding technology, biomedicine (implantology). It has become clear that information on many relevant advances, regarding ion bombardment modification of surfaces is dispersed among journals involving fields sometimes not clearly related. This may result, in some cases, in a loss of the type of interdisciplinary exchange of ideas, which has proved to be so fruitful for the advancement of science and technology. This book has been planned in an attempt to collect at least some of today's relevant information about the experimental and theoretical knowledge related to surface modification and its application to technology. (Auth.)

  2. Investigation of the double exponential in the current-voltage characteristics of silicon solar cells. [proton irradiation effects on ATS 1 cells

    Science.gov (United States)

    Wolf, M.; Noel, G. T.; Stirn, R. J.

    1977-01-01

    Difficulties in relating observed current-voltage characteristics of individual silicon solar cells to their physical and material parameters were underscored by the unexpected large changes in the current-voltage characteristics telemetered back from solar cells on the ATS-1 spacecraft during their first year in synchronous orbit. Depletion region recombination was studied in cells exhibiting a clear double-exponential dark characteristic by subjecting the cells to proton irradiation. A significant change in the saturation current, an effect included in the Sah, Noyce, Shockley formulation of diode current resulting from recombination in the depletion region, was caused by the introduction of shallow levels in the depletion region by the proton irradiation. This saturation current is not attributable only to diffusion current from outside the depletion region and only its temperature dependence can clarify its origin. The current associated with the introduction of deep-lying levels did not change significantly in these experiments.

  3. Facies of ion bombarded surfaces of brittle materials

    International Nuclear Information System (INIS)

    Primak, W.

    1975-12-01

    Materials were bombarded by protons, deuterons, and helium ions. The materials investigated were quartz; glasses; carbides and borides (SiC, B 4 C, TiB 2 ); oxides and nitrides (magnorite, sapphire, spinel, Al 2 O 3 , Si 3 N 4 , ZrO 2 , BaTiO 3 ); and miscellaneous (graphite, LiNbO 3 , copper). Oberservations were of growth, reflectivity, blistering, surface ablation, and swelling. Calculations were made of the effects of a layer, of its gradual transformation, and of the introduction of a gas. It is concluded that: Radiation blistering is not a primary process. Observations of blister formation and exfoliation cannot be used to calculate the surface ablation rate. The primary process is the development of a microporous layer which causes swelling. Visible blisters are caused by fracturing by transverse stresses in this layer and may occur during the bombardment, or in some cases, much later, in storage. There is no evidence of extreme gas pressures in the blisters. When blisters develop, they may be stable under continued bombardment for a dose many times that at which they formed. The swelling is a better index of the effects than is the blistering, and must be associated in most cases with permeability to the gas. Behavior with protons and deuterons is similar, with helium different. All but quartz, vitreous silica, and Pyrex are impervious to hydrogen and deuterium; only dense barium crown glass, carbides, borides, oxides, and nitrides are impervious to helium. Quartz shows swelling caused by conversion to a vitreous product of much lower density but no porosity, while for the others, most of the swelling and surface growth is caused by porosity. Surface ablation by the blistering process may be reduced by initial porosity or by initial or subsequent surface fissuring. However, for impervious materials, surface damage by the introduction of porosity would continue

  4. Effects of low and high energy ion bombardment on ETFE polymer

    Science.gov (United States)

    Minamisawa, R. A.; De Almeida, A.; Abidzina, V.; Parada, M. A.; Muntele, I.; Ila, D.

    2007-04-01

    The polymer ethylenetetrafluoroethylene (ETFE) is used as anti-adherent coatings for food packages and radiation dosimeters. In this work, we compare the damage induced in ETFE bombarded with 100 keV Si ions with that induced by 1 MeV proton bombardment. The damage depends on the type, energy and intensity of the irradiation. Irradiated films were analyzed with optical absorption photospectrometry, Raman spectroscopy and Fourier transform infrared (FTIR) spectroscopy to determine the chemical nature of the structural changes caused by ion irradiation. Computer simulations were performed to evaluate the radiation damage.

  5. Photocarrier radiometry for predicting the degradation of electrical parameters of monocrystalline silicon (c-Si) solar cell irradiated by 100 KeV proton beams

    Energy Technology Data Exchange (ETDEWEB)

    Song, P. [School of Mechatronics Engineering, Harbin Institute of Technology, Harbin 150001 (China); Liu, J.Y., E-mail: ljywlj@hit.edu.cn [School of Mechatronics Engineering, Harbin Institute of Technology, Harbin 150001 (China); State Key Laboratory of Robotics and System (HIT), Harbin 150001 (China); Yuan, H.M.; Oliullah, Md.; Wang, F. [School of Mechatronics Engineering, Harbin Institute of Technology, Harbin 150001 (China); Wang, Y., E-mail: songpengkevin@126.com [School of Mechatronics Engineering, Harbin Institute of Technology, Harbin 150001 (China); State Key Laboratory of Robotics and System (HIT), Harbin 150001 (China)

    2016-09-15

    In this study, the monocrystalline silicon (c-Si) solar cell irradiated by 100 KeV proton beams at various fluences is investigated. A one-dimensional two-layer carrier density wave model has been developed to estimate the minority carrier lifetime of n-region and p-region of the non-irradiated c-Si solar cell by best fitting with the experimental photocarrier radiometry (PCR) signal (the amplitude and the phase). Furthermore, the lifetime is used to determine the initial defect density of the quasi-neutral region (QNR) of the solar cell to predict its I–V characteristics. The theoretically predicted short-circuit current density (J{sub sc}), and open-circuit voltage (V{sub oc}) of the non-irradiated samples are in good agreement with experiment. Then a three-region defect distribution model for the c-Si solar cell irradiated by proton beams is carried out to describe the defect density distribution according to Monte Carlo simulation results and the initial defect density of the non-irradiated sample. Finally, we find that the electrical measurements of J{sub sc} and V{sub oc} of the solar cells irradiated at different fluences using 100 KeV proton beams are consistent with the PCR predicting results.

  6. Photocarrier radiometry for predicting the degradation of electrical parameters of monocrystalline silicon (c-Si) solar cell irradiated by 100 KeV proton beams

    International Nuclear Information System (INIS)

    Song, P.; Liu, J.Y.; Yuan, H.M.; Oliullah, Md.; Wang, F.; Wang, Y.

    2016-01-01

    In this study, the monocrystalline silicon (c-Si) solar cell irradiated by 100 KeV proton beams at various fluences is investigated. A one-dimensional two-layer carrier density wave model has been developed to estimate the minority carrier lifetime of n-region and p-region of the non-irradiated c-Si solar cell by best fitting with the experimental photocarrier radiometry (PCR) signal (the amplitude and the phase). Furthermore, the lifetime is used to determine the initial defect density of the quasi-neutral region (QNR) of the solar cell to predict its I–V characteristics. The theoretically predicted short-circuit current density (J_s_c), and open-circuit voltage (V_o_c) of the non-irradiated samples are in good agreement with experiment. Then a three-region defect distribution model for the c-Si solar cell irradiated by proton beams is carried out to describe the defect density distribution according to Monte Carlo simulation results and the initial defect density of the non-irradiated sample. Finally, we find that the electrical measurements of J_s_c and V_o_c of the solar cells irradiated at different fluences using 100 KeV proton beams are consistent with the PCR predicting results.

  7. Proton induced single event upset cross section prediction for 0.15 μm six-transistor (6T) silicon-on-insulator static random access memories

    International Nuclear Information System (INIS)

    Li Lei; Zhou Wanting; Liu Huihua

    2012-01-01

    In this paper, an efficient physics-based method to estimate the saturated proton upset cross section for six-transistor (6T) silicon-on-insulator (SOI) static random access memory (SRAM) cells using layout and technology parameters is proposed. This method calculates the effects of radiation based on device physics. The simple method handles the problem with ease by SPICE simulations, which can be divided into two stages. At first, it uses a standard SPICE program to predict the cross section for recoiling heavy ions with linear energy transfer (LET) of 14 MeV-cm 2 /mg. Then, the predicted cross section for recoiling heavy ions with LET of 14 MeV-cm 2 /mg is used to estimate the saturated proton upset cross section for 6T SOI SRAM cells with a simple model. The calculated proton induced upset cross section based on this method is in good agreement with the test results of 6T SOI SRAM cells processed using 0.15 μm technology. (author)

  8. The investigations of beam extraction and collimation at U-70 proton synchrotron of IHEP by using short silicon crystals

    CERN Document Server

    Afonine, A G; Biryukov, V M; Breese, M B H; Chepegin, V N; Chesnokov, Yu A; Drees, A; Fedotov, Y S; Guidi, V; Kotov, V I; Maisheev, V A; Martinelli, G; Scandale, Walter; Stefancich, M; Terekhov, V I; Trbojevic, D; Troyanov, E F; Vincenzi, D

    2002-01-01

    The new results of using short (2-4 mm) bent crystals for extraction and collimation of proton beam at IHEP 70 GeV proton synchrotron are reported. A broad range of energies from 6 to 65 GeV has been studied in the same crystal collimation set-up where earlier the extraction efficiency of 85% was obtained for 70 GeV protons using a 2-mm Si crystal. The new regime of extraction is applied now at the accelerator to deliver the beam for different experimental setups within the range of intensity 10E7-10E12ppp. (6 refs).

  9. Characterization techniques for ion bombarded insulators

    International Nuclear Information System (INIS)

    Borders, J.A.

    1987-01-01

    The chapter gives a comprehensive review of the experimental methods for the analysis of ion-bombarded insulators including optical and structural methods, resonance, energetic ion methods, and surface techniques. 48 refs.; 34 figs

  10. Hadroproduction of the {chi}{sub 1} and {chi}{sub 2} states of charmonium in 800-GeV/c proton-silicon interactions

    Energy Technology Data Exchange (ETDEWEB)

    Alexopoulos, T. [University of Wisconsin, Madison, Wisconsin 53706 (United States); Antoniazzi, L. [University and INFN of Pavia, I-27100 Pavia, (Italy); Arenton, M. [University of Virginia, Charlottesville, Virginia 22901 (United States); Ballagh, H. C. [University of California at Berkeley, Berkeley, California 94720 (United States); Bingham, H. [University of California at Berkeley, Berkeley, California 94720 (United States); Blankman, A. [University of Pennsylvania, Philadelphia, Pennsylvania 19104 (United States); Block, M. [Northwestern University, Evanston, Illinois 60208 (United States); Boden, A. [University of California at Los Angeles, Los Angeles, California 90024 (United States); Bonomi, G. [University and INFN of Pavia, I-27100 Pavia, (Italy); Cao, Z. L. [University of Virginia, Charlottesville, Virginia 22901 (United States)] (and others)

    2000-08-01

    The cross sections for the hadroproduction of the {chi}{sub 1} and {chi}{sub 2} states of charmonium in proton-silicon collisions at {radical}(s)=38.8 GeV have been measured in Fermilab fixed target experiment 771. The {chi} states were observed via their radiative decay to J/{psi}{gamma}, where the photon converted to e{sup +}e{sup -} in the material of the spectrometer. The estimated values for the {chi}{sub 1} and {chi}{sub 2} cross sections for x{sub F}>0 are 263{+-}69(stat){+-}32(syst) and 498{+-}143(stat){+-}67(syst) nb per nucleon, respectively. The resulting {sigma}({chi}{sub 1})/{sigma}({chi}{sub 2}) ratio of 0.53{+-}0.20(stat){+-}0.07(syst), although somewhat larger than most theoretical expectations, can be accommodated by the latest theoretical estimates. (c) 2000 The American Physical Society.

  11. Effect of proton and electron-irradiation intensity on radiation-induced damages in silicon bioolar transistors

    International Nuclear Information System (INIS)

    Bannikov, Yu.A.; Gorin, B.M.; Kozhevnikov, V.P.; Mikhnovich, V.V.; Gusev, L.I.

    1981-01-01

    The increase of radiation-induced damages of bipolar n-p-n transistors 8-12 times with the irradiation intensity decrease by protons from 4.07x1010 to 2.5x107 cm-2 x c-1 has been found experimentally. damages of p-n-p transistors vary in the opposite way - they are decreased 2-3 times with the irradiation intensity decrease within the same limits. the dependence of damages on intansity of proton irradiation occurs at the dose rate by three orders less than it has been observed for electron irradiation. the results obtained are explained by the dependence of radiation defectoformation reactions on charge state of defects with account for the role of formation of disordering regions upon proton irradiation [ru

  12. The Investigations Of Beam Extraction And Collimation At U-70 Proton Synchrotron Of IHEP By Using Short Silicon Crystals

    CERN Document Server

    Afonine, A.G.; Biryukov, V.M.; Chepegin, V.N.; Chesnokov, Y.A.; Fedotov, Y.S.; Kotov, V.I.; Maisheev, V.A.; Terekhov, V.I.; Troyanov, E.F.; Drees, A.; Trbojevic, D.; Scandale, W.; Breese, M.B.H.; Guidi, V.; Martinelli, G.; Stefancich, M.; Vincenzi, D.

    2002-01-01

    The new results of using short (2-4mm) bent crystals for extraction and collimation of proton beam at IHEP 70 Gev proton synchrotron are reported. A broad range of energies from 6 to 65 GeV has been studied in the same crystal collimation set-up. The efficiency of extraction more than 85% and intensity more than 10E12 were obtained by using crystal with the length 2-mm and the angle 1 mrad. The new regime of extraction is applied now at the accelerator to deliver the beam for different experimental setups within the range of intensity 10E7-10E12ppp.

  13. Energy distribution measurements of 300 keV transmitted protons at the axial-to-planar channeling transition in silicon

    International Nuclear Information System (INIS)

    Bulgakov, Yu.V.; Lenkeit, K.; Stolle, R.

    1983-01-01

    The energy distribution of protons with initial energy of 300 keV which passed through a 0.76 μm thick Si monocrystal film was measured under the conditions of transition from the axial to planar (110) channeling. The experimental angular dependences of the transparency coefficient and of the first three moments of the energy distributions (energy loss, straggling, and skewness) for 300 keV protons are shown. The shape of curves are discussed explaining the resonance dechanneling effect and the non-monotonic behaviour of transparency in the case of the axial-to-planar channeling transition

  14. Ion beam induces nitridation of silicon

    International Nuclear Information System (INIS)

    Petravic, M.; Williams, J.S.; Conway, M.

    1998-01-01

    High dose ion bombardment of silicon with reactive species, such as oxygen and nitrogen, has attracted considerable interest due to possible applications of beam-induced chemical compounds with silicon. For example, high energy oxygen bombardment of Si is now routinely used to form buried oxide layers for device purposes, the so called SIMOX structures. On the other hand, Si nitrides, formed by low energy ( 100 keV) nitrogen beam bombardment of Si, are attractive as oxidation barriers or gate insulators, primarily due to the low diffusivity of many species in Si nitrides. However, little data exists on silicon nitride formation during bombardment and its angle dependence, in particular for N 2 + bombardment in the 10 keV range, which is of interest for analytical techniques such as SIMS. In SIMS, low energy oxygen ions are more commonly used as bombarding species, as oxygen provides stable ion yields and enhances the positive secondary ion yield. Therefore, a large body of data can be found in the literature on oxide formation during low energy oxygen bombardment. Nitrogen bombardment of Si may cause similar effects to oxygen bombardment, as nitrogen and oxygen have similar masses and ranges in Si, show similar sputtering effects and both have the ability to form chemical compounds with Si. In this work we explore this possibility in some detail. We compare oxide and nitride formation during oxygen and nitrogen ion bombardment of Si under similar conditions. Despite the expected similar behaviour, some large differences in compound formation were found. These differences are explained in terms of different atomic diffusivities in oxides and nitrides, film structural differences and thermodynamic properties. (author)

  15. Low surface damage dry etched black silicon

    DEFF Research Database (Denmark)

    Plakhotnyuk, Maksym M.; Gaudig, Maria; Davidsen, Rasmus Schmidt

    2017-01-01

    Black silicon (bSi) is promising for integration into silicon solar cell fabrication flow due to its excellent light trapping and low reflectance, and a continuously improving passivation. However, intensive ion bombardment during the reactive ion etching used to fabricate bSi induces surface dam...

  16. Influence of the flux density on the radiation damage of bipolar silicon transistors by protons and electrons

    International Nuclear Information System (INIS)

    Bannikov, Y.; Gorin, B.; Kozhevnikov, V.; Mikhnovich, V.; Gusev, L.

    1981-01-01

    It was found experimentally that the radiation damage of bipolar n-p-n transistors increased by a factor of 8--12 when the proton flux density was reduced from 4.07 x 10 10 to 2.5 x 10 7 cm -2 sec -1 . In the case of p-n-p transistors the effect was opposite: there was a reduction in the radiation damage by a factor of 2--3 when the dose rate was lowered between the same limits. A similar effect was observed for electrons but at dose rates three orders of magnitude greater. The results were attributed to the dependences of the radiation defect-forming reactions on the charge state of defects which was influenced by the formation of disordered regions in the case of proton irradiation

  17. Study of proton radioactivities

    Energy Technology Data Exchange (ETDEWEB)

    Davids, C.N.; Back, B.B.; Henderson, D.J. [and others

    1995-08-01

    About a dozen nuclei are currently known to accomplish their radioactive decay by emitting a proton. These nuclei are situated far from the valley of stability, and mark the very limits of existence for proton-rich nuclei: the proton drip line. A new 39-ms proton radioactivity was observed following the bombardment of a {sup 96}Ru target by a beam of 420-MeV {sup 78}Kr. Using the double-sided Si strip detector implantation system at the FMA, a proton group having an energy of 1.05 MeV was observed, correlated with the implantation of ions having mass 167. The subsequent daughter decay was identified as {sup 166}Os by its characteristic alpha decay, and therefore the proton emitter is assigned to the {sup 167}Ir nucleus. Further analysis showed that a second weak proton group from the same nucleus is present, indicating an isomeric state. Two other proton emitters were discovered recently at the FMA: {sup 171}Au and {sup 185}Bi, which is the heaviest known proton radioactivity. The measured decay energies and half-lives will enable the angular momentum of the emitted protons to be determined, thus providing spectroscopic information on nuclei that are beyond the proton drip line. In addition, the decay energy yields the mass of the nucleus, providing a sensitive test of mass models in this extremely proton-rich region of the chart of the nuclides. Additional searches for proton emitters will be conducted in the future, in order to extend our knowledge of the location of the proton drip line.

  18. Experimental and theoretical studies of bombardment induced surface morphology changes

    International Nuclear Information System (INIS)

    Carter, G.; Nobes, M.J.; Williams, J.S.

    1980-01-01

    In this review results of experimental and theoretical studies of solid surface morphology changes due to ion bombardment are discussed. An attempt is undertaken to classify the observed specific features of a structure, generated by ion bombardment [ru

  19. Combined effect of bulk and surface damage on strip insulation properties of proton irradiated n$^{+}$-p silicon strip sensors

    CERN Document Server

    Dalal, R; Ranjan, K; Moll, M; Elliott-Peisert, A

    2014-01-01

    Silicon sensors in next generation hadron colliders willface a tremendously harsh radiation environment. Requirement tostudy rarest reaction channels with statistical constraints hasresulted in a huge increment in radiation flux, resulting in bothsurface damage and bulk damage. For sensors which are used in acharged hadron environment, both of these degrading processes takeplace simultaneously. Recently it has been observed in protonirradiated n$^{+}$-p Si strip sensors that n$^{+}$ strips had a goodinter-strip insulation with low values of p-spray and p-stop dopingdensities which is contrary to the expected behaviour from thecurrent understanding of radiation damage. In this work a simulationmodel has been devised incorporating radiation damage to understandand provide a possible explanation to the observed behaviour ofirradiated sensors.

  20. Boron-Proton Nuclear-Fusion Enhancement Induced in Boron-Doped Silicon Targets by Low-Contrast Pulsed Laser

    Directory of Open Access Journals (Sweden)

    A. Picciotto

    2014-08-01

    Full Text Available We show that a spatially well-defined layer of boron dopants in a hydrogen-enriched silicon target allows the production of a high yield of alpha particles of around 10^{9} per steradian using a nanosecond, low-contrast laser pulse with a nominal intensity of approximately 3×10^{16}  W cm^{−2}. This result can be ascribed to the nature of the long laser-pulse interaction with the target and with the expanding plasma, as well as to the optimal target geometry and composition. The possibility of an impact on future applications such as nuclear fusion without production of neutron-induced radioactivity and compact ion accelerators is anticipated.

  1. Modified conductivity of polymer materials with proton beam

    International Nuclear Information System (INIS)

    Matsumoto, Shinji; Seki, Miharu; Shima, Kunihiro; Ishihara, Toyoyuki

    2001-01-01

    Ionic conductivity of polymer materials is of increasing interest in many scientific fields. Industrial applications seem to be promising. In the present investigation, we used proton bombardment to modify the characteristic properties of polymers, especially for improvement in conductivity and hardening gel polymers. Particle beam bombardment is known to produce many scissions by particle passages and new bonds by bridge connection. These effects may modify various properties in many ways. We examined the modification of conductivity in solid polymers composed of polyethylene oxide and polyurethane and the surface appearance of gel polymers with bombardment by a proton beam using the accelerator facility of Tsukuba University. The results indicated proton bombardment induced conductivity changes in various ways according to particle range and polymer properties. (author)

  2. Magnetoresistance and ion bombardment induced magnetic patterning

    International Nuclear Information System (INIS)

    Hoeink, V.

    2008-01-01

    In this thesis the combination of the magnetic patterning of the unidirectional anisotropy and the tunnel magnetoresistance effect is investigated. In my diploma thesis, it has been shown that it is in principle possible to use the magnetic patterning by ion bombardment to magnetically structure the pinned layer in magnetic tunnel junctions (MTJs) with alumina barrier. Furthermore, it has been shown that the side effects which have been observed after this treatment can be at least reduced by an additional heating step. Starting from this point, the applicability of ion bombardment induced magnetic patterning (IBMP) in general and the combination of IBMP and MTJs in particular is investigated and new applications are developed. (orig.)

  3. Modification of thin film properties by ion bombardment during deposition

    International Nuclear Information System (INIS)

    Harper, J.M.E.; Cuomo, J.J.; Gambino, R.J.; Kaufman, H.R.

    1984-01-01

    Many thin film deposition techniques involve some form of energetic particle bombardment of the growing film. The degree of bombardment greatly influences the film composition, structure and other properties. While in some techniques the degree of bombardment is secondary to the original process design, in recent years more deposition systems are being designed with the capability for controlled ion bombardment of thin films during deposition. The highest degree of control is obtained with ion beam sources which operate independently of the vapor source providing the thin film material. Other plasma techniques offer varying degrees of control of energetic particle bombardment. Deposition methods involving ion bombardment are described, and the basic processes with which film properties are modified by ion bombardment are summarized. (Auth.)

  4. Hyperon production in proton-nucleus collisions at a center-of-mass energy of {radical}(s{sub NN}) = 41.6 GeV at HERA-B and design of silicon microstrip detectors for tracking at LHCb

    Energy Technology Data Exchange (ETDEWEB)

    Agari, Michaela

    2006-07-01

    The topics of this thesis are the measurements of hyperon production in protonnucleus collisions at {radical}(s)=41.6 GeV with the Hera-B detector located at DESY, Hamburg (Germany), and the design of silicon microstrip sensors for the LHCb experiment at CERN, Geneva (Switzerland). {lambda}, {xi} and {omega} hyperons and their antiparticles were reconstructed from 113.5 . 10{sup 6} inelastic collisions of protons with fixed carbon, titanium and tungsten targets. With these samples, antiparticle-to-particle ratios, cross sections integrated for the accessible kinematic region of Hera-B and single differential cross sections as function of transverse momentum, d{sigma}/dp{sub T}{sup 2} (for {lambda} and {xi}) and rapidity, d{sigma}/dy (for {lambda} only), have been been measured as well as the dependence of these quantities on the atomic number of the target nucleus, as parameterized using the Glauber model. The obtained ratios follow the same trend as found for the energy dependence of measurements from nucleus-nucleus collisions. Silicon microstrip sensors have been designed for the tracking system of the LHCb detector. Evaluating the performance in beam tests at CERN, the strip geometry and sensor thickness were varied optimizing for a large signal-to-noise ratio, a small number of read-out channels and a low occupancy. The detector is currently being built to be operational for first proton-proton collisions in autumn 2007. (orig.)

  5. Hyperon production in proton-nucleus collisions at a center-of-mass energy of √(sNN) = 41.6 GeV at HERA-B and design of silicon microstrip detectors for tracking at LHCb

    International Nuclear Information System (INIS)

    Agari, Michaela

    2006-01-01

    The topics of this thesis are the measurements of hyperon production in protonnucleus collisions at √(s)=41.6 GeV with the Hera-B detector located at DESY, Hamburg (Germany), and the design of silicon microstrip sensors for the LHCb experiment at CERN, Geneva (Switzerland). Λ, Ξ and Ω hyperons and their antiparticles were reconstructed from 113.5 . 10 6 inelastic collisions of protons with fixed carbon, titanium and tungsten targets. With these samples, antiparticle-to-particle ratios, cross sections integrated for the accessible kinematic region of Hera-B and single differential cross sections as function of transverse momentum, dσ/dp T 2 (for Λ and Ξ) and rapidity, dσ/dy (for Λ only), have been been measured as well as the dependence of these quantities on the atomic number of the target nucleus, as parameterized using the Glauber model. The obtained ratios follow the same trend as found for the energy dependence of measurements from nucleus-nucleus collisions. Silicon microstrip sensors have been designed for the tracking system of the LHCb detector. Evaluating the performance in beam tests at CERN, the strip geometry and sensor thickness were varied optimizing for a large signal-to-noise ratio, a small number of read-out channels and a low occupancy. The detector is currently being built to be operational for first proton-proton collisions in autumn 2007. (orig.)

  6. An Alpha Proton X-Ray Spectrometer for Mars-96 and Mars Pathfinder

    Science.gov (United States)

    Rieder, R.; Wanke, H.; Economou, T.

    1996-09-01

    Mars Pathfinder and the Russian Mars-96 will carry an Alpha Proton X-Ray Spectrometer (APXS) for the determination of the chemical composition of Martian rocks and soil. The instrument will measure the concentration of all major and many minor elements, including C,N and O, at levels above typically 1%. The method employed consist of bombarding a sample of 50 mm diameter with alpha particles from a radioactive source (50 mCi of Cm-244) and measuring: (i) backscattered alpha particles (alpha mode) (ii) protons from (a,p) reactions with some light elements (proton mode) (iii) characteristic X-rays emitted from the sample (X-ray mode). The APXS has a long standing space heritage, going back to Surveyor V,VI and VII (1967/68) and the Soviet Phobos (1988) missions. The present design is the result of an endeavour to reduce mass and power consumption to 600g/ 300mW. It consist of a sensor head containing the alpha sources, a telescope of a silicon detectors for the detection of the alpha particles and protons and a separate X-ray detector with its preamplifier, and an electronics box (80x70x60 mm) containing a microcontroller based multichannel spectrometer. The paper will describe the APXS flight hardware and present results obtained with the flight instrument that will show the instrument capabili- ties and the expected results to be obtained during surface operations on Mars.

  7. Beryllium dust generation resulting from plasma bombardment

    International Nuclear Information System (INIS)

    Doerner, R.; Mays, C.

    1997-01-01

    The beryllium dust resulting from erosion of beryllium samples subjected to plasma bombardment has been measured in PISCES-B. Loose surface dust was found to be uniformly distributed throughout the device and accounts for 3% of the eroded material. A size distribution measurement of the loose surface dust shows an increasing number of particles with decreasing diameter. Beryllium coatings on surfaces with a line of sight view of the target interaction region account for an additional 33% of the eroded beryllium material. Flaking of these surface layers is observed and is thought to play a significant role in dust generation inside the vacuum vessel. (orig.)

  8. Electron emission from Inconel under ion bombardment

    International Nuclear Information System (INIS)

    Alonso, E.V.; Baragiola, R.A.; Ferron, J.; Oliva-Florio, A.

    1979-01-01

    Electron yields from clean and oxidized Inconel 625 surfaces have been measured for H + ,H 2 + ,He + ,O + and Ar + ions at normal incidence in the energy range 1.5 to 40 keV. These measurements have been made under ultrahigh vacuum and the samples were freed of surface contaminants by bombarding with high doses of either 20 keV H 2 + or 30 keV Ar + ions. Differences in yields of oxidized versus clean surfaces are explained in terms of differences in the probability that electrons internally excited escape upon reaching the surface. (author)

  9. Electrochemically assisted fast-atom-bombardment mass spectrometry

    International Nuclear Information System (INIS)

    Phillips, L.R.

    1988-01-01

    The hybridization of electrochemistry and fast atom bombardment (FAB) mass spectrometry (MS) creates a new hyphenated technique, referred to as electrochemically assisted FAB (EFAB) MS, which improves the applicability of FAB MS in selectivity and extends the range of compounds to include low polarity molecules, and also reduces mass spectral complications due to matrix-related artifacts. FAB MS has proven to be indispensable in analysis of samples that are otherwise too intractable for conventional MS, such as peptides, oligosaccharides, and oligonucleotides, due to low volatility and ready thermal degradation. There are limits on its applicability, however, in that it works best with samples that are already ionic, or predisposed to become so by simple proton transfer to or from the matrix. A wide range of chemical substances can be ionized/analyzed by electrochemical methods. Therefore, a possible approach towards improving applicability of FAB MS is through its hybridization with electrochemistry. Samples are activated by electrolysis, carried out directly in the sample matrix through use of a modified FAB sample probe which was constructed containing a small electrolytic cell on the tip. In operation, one electrode is held at normal sample-probe/ion-source voltage, while the other electrode can be continuously varied ±15 volts to create electrochemical potentials. Several chemical substances, known to be unresponsive to FAB MS, have been examined by EFAB MS. Resultant spectra generally show a dramatic increases in signal/chemical noise ratio of structurally significant ions when compared to normal FAB spectra

  10. Annealing of defects in indium antimonide after ion bombardment

    International Nuclear Information System (INIS)

    Bogatyrev, V.A.; Kachurin, G.A.

    1977-01-01

    Indium antimonide electric properties are investigated after ion bombardment of different mass (with energy of 60 and 300 keV) and isochrone annealing in the 20-450 deg C temperature range. It is shown that 100-150 deg C n- type stable layers are formed after proton irradiation at room temperature only. Indium antimonide exposure by average mass ions under the same conditions and also by helium ions of 300 keV energy brings to p-type layer formation with high hole concentration. Subsequent heating at the temperature over 150 deg C results in electron conductivity of irradiated layers. Electron volume density and mobility efficiency reaches 10 18 cm -3 and 10 4 cm 2 /Vs respectively. N-type formed layers are stable up to 350 deg C allowing its usage for n-p transition formation admitting thermal treatment. Analysis is given of defect behaviour peculiarities depending upon the irradiation and annealing conditions. Hole conductivity in irradiated indium antimonide is supposed to be stipulated by regions of disorder, while electron conductivity - by relatively simpler disorders

  11. Fast atom bombardment tandem mass spectrometry of carotenoids

    Energy Technology Data Exchange (ETDEWEB)

    van Breeman, R.B. [Univ. of Illinois, Chicago, IL (United States); Schmitz, H.H.; Schwartz, S.J. [North Carolina State Univ., Raleigh, NC (United States)

    1995-02-01

    Positive ion fast atom bombardment (FAB) tandem mass spectrometry (MS-MS) using a double-focusing mass spectrometer with linked scanning at constant B/E and high-energy collisionally activated dissociation (CAD) was used to differentiate 17 different cartenoids, including {beta}-apo-8{prime}- carotenal, astaxanthin, {alpha}-carotene, {beta}-carotene, {gamma}-carotene, {zeta}-carotene, canthaxanthin, {beta}-cryptoxanthin, isozeaxanthin bis (pelargonate), neoxanthin, neurosporene, nonaprene, lutein, lycopene, phytoene, phytofluene, and zeaxanthin. The carotenoids were either synthetic or isolated from plant tissues. The use of FAB ionization minimized degradation or rearrangement of the carotenoid structures due to the inherent thermal instability generally ascribed to these compounds. Instead of protonated molecules, both polar xanthophylls and nonpolar carotenes formed molecular ions, M{sup {center_dot}+}, during FAB ionization. Following collisionally activated dissociation, fragment ions of selected molecular ion precursors showed structural features indicative of the presence of hydroxyl groups, ring systems, ester groups, and aldehyde groups and the extent of aliphatic polyene conjugation. The fragmentation patterns observed in the mass spectra herein may be used as a reference for the structural determination of carotenoids isolated from plant and animal tissues. 18 refs., 4 figs.

  12. Modification of thin film properties by ion bombardment during deposition

    International Nuclear Information System (INIS)

    Harper, J.M.E.; Cuomo, J.J.; Gambino, R.J.; Kaufman, H.R.

    1984-01-01

    Deposition methods involving ion bombardment are described, and the basic processes with which film properties are modified by ion bombardment are summarized. Examples of thin film property modification by ion bombardment during deposition, including effects which are primarily compositional as well as those which are primarily structural are presented. The examples demonstrate the usefulness of ion beam techniques in identifying and controlling the fundamental deposition parameters. 68 refs.; 15 figs.; 1 table

  13. Colloidal characterization of ultrafine silicon carbide and silicon nitride powders

    Science.gov (United States)

    Whitman, Pamela K.; Feke, Donald L.

    1986-01-01

    The effects of various powder treatment strategies on the colloid chemistry of aqueous dispersions of silicon carbide and silicon nitride are examined using a surface titration methodology. Pretreatments are used to differentiate between the true surface chemistry of the powders and artifacts resulting from exposure history. Silicon nitride powders require more extensive pretreatment to reveal consistent surface chemistry than do silicon carbide powders. As measured by titration, the degree of proton adsorption from the suspending fluid by pretreated silicon nitride and silicon carbide powders can both be made similar to that of silica.

  14. Adhesion of silver films to ion-bombarded alumina

    International Nuclear Information System (INIS)

    Erck, R.A.; Fenske, G.R.

    1990-01-01

    This paper reports on silver films deposited on alumina substrates using ion bombardment. Adhesion strength was measured as a function of deposition conditions, sputter-cleaning time, and bombarding ion species, using a pull-type adhesion tester. Argon- and argon/oxygen-ion sputtering produced large increases in adhesion strength, with the greatest increases occurring for oxygen-ion bombardment. Adhesion strength increased monotonically as a function of ion sputtering time. At a given deposition rate, further enhancement of adhesion is seen with concurrent ion bombardment

  15. The timeline of the lunar bombardment: Revisited

    Science.gov (United States)

    Morbidelli, A.; Nesvorny, D.; Laurenz, V.; Marchi, S.; Rubie, D. C.; Elkins-Tanton, L.; Wieczorek, M.; Jacobson, S.

    2018-05-01

    The timeline of the lunar bombardment in the first Gy of Solar System history remains unclear. Basin-forming impacts (e.g. Imbrium, Orientale), occurred 3.9-3.7 Gy ago, i.e. 600-800 My after the formation of the Moon itself. Many other basins formed before Imbrium, but their exact ages are not precisely known. There is an intense debate between two possible interpretations of the data: in the cataclysm scenario there was a surge in the impact rate approximately at the time of Imbrium formation, while in the accretion tail scenario the lunar bombardment declined since the era of planet formation and the latest basins formed in its tail-end. Here, we revisit the work of Morbidelli et al. (2012) that examined which scenario could be compatible with both the lunar crater record in the 3-4 Gy period and the abundance of highly siderophile elements (HSE) in the lunar mantle. We use updated numerical simulations of the fluxes of asteroids, comets and planetesimals leftover from the planet-formation process. Under the traditional assumption that the HSEs track the total amount of material accreted by the Moon since its formation, we conclude that only the cataclysm scenario can explain the data. The cataclysm should have started ∼ 3.95 Gy ago. However we also consider the possibility that HSEs are sequestered from the mantle of a planet during magma ocean crystallization, due to iron sulfide exsolution (O'Neil, 1991; Rubie et al., 2016). We show that this is likely true also for the Moon, if mantle overturn is taken into account. Based on the hypothesis that the lunar magma ocean crystallized about 100-150 My after Moon formation (Elkins-Tanton et al., 2011), and therefore that HSEs accumulated in the lunar mantle only after this timespan, we show that the bombardment in the 3-4 Gy period can be explained in the accretion tail scenario. This hypothesis would also explain why the Moon appears so depleted in HSEs relative to the Earth. We also extend our analysis of the

  16. Multiplication in Silicon p-n Junctions

    DEFF Research Database (Denmark)

    Moll, John L.

    1965-01-01

    Multiplication values were measured in the collector junctions of silicon p-n-p and n-p-n transistors before and after bombardment by 1016 neutrons/cm2. Within experimental error there was no change either in junction fields, as deduced from capacitance measurements, or in multiplication values i...

  17. Electron emission from molybdenum under ion bombardment

    International Nuclear Information System (INIS)

    Ferron, J.; Alonso, E.V.; Baragiola, R.A.; Oliva-Florio, A.

    1981-01-01

    Measurements are reported of electron emission yields of clean molybdenum surfaces under bombardment with H + , H 2 + , D + , D 2 + , He + , N + , N 2 + , O + , O 2 + , Ne + , Ar + , Kr + and Xe + in the wide energy range 0.7-60.2 keV. The clean surfaces were produced by inert gas sputtering under ultrahigh vacuum. The results are compared with those predicted by a core-level excitation model. The disagreement found when using correct values for the energy levels of Mo is traced to wrong assumptions in the model. A substantially improved agreement with experiment is obtained using a model in which electron emission results from the excitation of valence electrons from the target by the projectiles and fast recoiling target atoms. (author)

  18. Ion bombardment techniques - recent developments in SIMS

    International Nuclear Information System (INIS)

    Konarski, P.; Miśnik, M.

    2013-01-01

    We present a short review of cluster ion bombardment technique recently applied in SIMS. Many advantages of using cluster ion beams are specified over monoatomic ion species. Cluster ions open really new perspectives especially in organic based structures analysis. Nevertheless cluster ions are not the perfect solution and still new ideas of ion erosion in SIMS are needed. Another issue discussed is 'storing matter' technique applied for quantitative analysis in SIMS. Simple idea of sputter deposition of eroded material onto rotating substrate and then analysing the stored material allows to avoid strong matrix effects in SIMS. Presented are the results performed in Tele and Radio Research Institute, Warszawa, Poland. These are the first results of ‘storing matter’ technique performed in one analytical chamber of SIMS instrument. (authors)

  19. The terrestrial record of Late Heavy Bombardment

    Science.gov (United States)

    Lowe, Donald R.; Byerly, Gary R.

    2018-04-01

    Until recently, the known impact record of the early Solar System lay exclusively on the surfaces of the Moon, Mars, and other bodies where it has not been erased by later weathering, erosion, impact gardening, and/or tectonism. Study of the cratered surfaces of these bodies led to the concept of the Late Heavy Bombardment (LHB), an interval from about 4.1 to 3.8 billion years ago (Ga) during which the surfaces of the planets and moons in the inner Solar System were subject to unusually high rates of bombardment followed by a decline to present low impact rates by about 3.5 Ga. Over the past 30 years, however, it has become apparent that there is a terrestrial record of large impacts from at least 3.47 to 3.22 Ga and from 2.63 to 2.49 Ga. The present paper explores the earlier of these impact records, providing details about the nature of the 8 known ejecta layers that constitute the evidence for large terrestrial impacts during the earlier of these intervals, the inferred size of the impactors, and the potential effects of these impacts on crustal development and life. The existence of this record implies that LHB did not end abruptly at 3.8-3.7 Ga but rather that high impact rates, either continuous or as impact clusters, persisted until at least the close of the Archean at 2.5 Ga. It implies that the shift from external, impact-related controls on the long-term development of the surface system on the Earth to more internal, geodynamic controls may have occurred much later in geologic history than has been supposed previously.

  20. Cesium ion bombardment of metal surfaces

    International Nuclear Information System (INIS)

    Tompa, G.S.

    1986-01-01

    The steady state cesium coverage due to cesium ion bombardment of molybdenum and tungsten was studied for the incident energy range below 500 eV. When a sample is exposed to a positive ion beam, the work function decreases until steady state is reached with a total dose of less than ≅10 16 ions/cm 2 , for both tungsten and molybdenum. A steady state minimum work function surface is produced at an incident energy of ≅100 eV for molybdenum and at an incident energy of ≅45 eV for tungsten. Increasing the incident energy results in an increase in the work function corresponding to a decrease in the surface coverage of cesium. At incident energies less than that giving the minimum work function, the work function approaches that of cesium metal. At a given bombarding energy the cesium coverage of tungsten is uniformly less than that of molybdenum. Effects of hydrogen gas coadsorption were also examined. Hydrogen coadsorption does not have a large effect on the steady state work functions. The largest shifts in the work function due to the coadsorption of hydrogen occur on the samples when there is no cesium present. A theory describing the steady-state coverage was developed is used to make predictions for other materials. A simple sticking and sputtering relationship, not including implantation, cannot account for the steady state coverage. At low concentrations, cesium coverage of a target is proportional to the ratio of (1 - β)/γ where β is the reflection coefficient and γ is the sputter yield. High coverages are produced on molybdenum due to implantation and low backscattering, because molybdenum is lighter than cesium. For tungsten the high backscattering and low implantation result in low coverages

  1. Cleaning of diffusion bonding surface by argon ion bombardment treatment

    International Nuclear Information System (INIS)

    Wang, Airu; Ohashi, Osamu; Yamaguchi, Norio; Aoki, Masanori; Higashi, Yasuo; Hitomi, Nobuteru

    2003-01-01

    The specimens of oxygen-free high conductivity copper, SUS304L stainless steel and pure iron were treated by argon ion bombardment and then were bonded by diffusion bonding method. The effects of argon ion bombardment treatment on faying surface morphology, tensile strength of bonding joints and inclusions at the fracture surface were investigated. The results showed that argon ion bombardment treatment was effective to remove the oxide film and contamination at the faying surface and improve the quality of joints. The tensile strength of the bonded joints was improved, and minimum bonding temperature to make the metallic bonding at the interface was lowered by argon ion bombardment treatment. At the joints with argon ion bombardment treatment, ductile fractured surface was seen and the amount of inclusions was obviously decreased

  2. Proton-proton bremsstrahlung

    International Nuclear Information System (INIS)

    Fearing, H.W.

    1990-01-01

    We summarize some of the information about the nucleon-nucleon force which has been obtained by comparing recent calculations of proton-proton bremsstrahlung with cross section and analyzing power data from the new TRIUMF bremsstrahlung experiment. Some comments are made as to how these results can be extended to neutron-proton bremsstrahlung. (Author) 17 refs., 6 figs

  3. AES, EELS and TRIM simulation method study of InP(100 subjected to Ar+, He+ and H+ ions bombardment.

    Directory of Open Access Journals (Sweden)

    Abidri B.

    2012-06-01

    Full Text Available Auger Electron Spectroscopy (AES and Electron Energy Loss Spectroscopy (EELS have been performed in order to investigate the InP(100 surface subjected to ions bombardment. The InP(100 surface is always contaminated by carbon and oxygen revealed by C-KLL and O-KLL AES spectra recorded just after introduction of the sample in the UHV spectrometer chamber. The usually cleaning process of the surface is the bombardment by argon ions. However, even at low energy of ions beam (300 eV indium clusters and phosphorus vacancies are usually formed on the surface. The aim of our study is to compare the behaviour of the surface when submitted to He+ or H+ ions bombardment. The helium ions accelerated at 500V voltage and for 45 mn allow removing contaminants but induces damaged and no stoichiometric surface. The proton ions were accelerated at low energy of 500 eV to bombard the InP surface at room temperature. The proton ions broke the In-P chemical bonds to induce the formation of In metal islands. Such a chemical reactivity between hydrogen and phosphorus led to form chemical species such as PH and PH3, which desorbed from the surface. The chemical susceptibly and the small size of H+ advantaged their diffusion into bulk. Since the experimental methods alone were not able to give us with accuracy the disturbed depth of the target by these ions. We associate to the AES and EELS spectroscopies, the TRIM (Transport and Range of Ions in Matter simulation method in order to show the mechanism of interaction between Ar+, He+ or H+ ions and InP and determine the disturbed depth of the target by argon, helium or proton ions.

  4. Study on 150μm thick n- and p-type epitaxial silicon sensors irradiated with 24 GeV/c protons and 1 MeV neutrons

    International Nuclear Information System (INIS)

    Kaska, Katharina; Moll, Michael; Fahrer, Manuel

    2010-01-01

    A study on 150μm epitaxial (EPI) n- and p-type silicon diodes irradiated with neutrons up to 8x10 15 n/cm 2 and protons up to 1.7x10 15 p/cm 2 has been performed by means of CV/IV, charge collection efficiency (CCE) and transient current technique (TCT) measurements. It is found that the effective space charge density increases three times faster after proton than after neutron irradiation with a slightly higher effective space charge generation rate for n-type material compared to p-type material. A drop in charge collection efficiency already at fluences of 1x10 12 n eq /cm 2 can be seen in n-type material, but is absent in p-type material. TCT measurements show space charge sign inversion from positive to negative charge in n-type material after neutron irradiation and from negative to positive space charge in p-type material after proton irradiation. No difference was found in the response of diodes manufactured by different producers out of the same wafer material.

  5. Characterization of Czochralski Silicon Detectors

    OpenAIRE

    Luukka, Panja-Riina; Haerkoenen, Jaakko

    2012-01-01

    This thesis describes the characterization of irradiated and non-irradiated segmenteddetectors made of high-resistivity (>1 kΩcm) magnetic Czochralski (MCZ) silicon. It isshown that the radiation hardness (RH) of the protons of these detectors is higher thanthat of devices made of traditional materials such as Float Zone (FZ) silicon or DiffusionOxygenated Float Zone (DOFZ) silicon due to the presence of intrinsic oxygen (> 5 x1017 cm-3). The MCZ devices therefore present an interesting alter...

  6. Photocarrier Radiometry for Non-contact Evaluation of Monocrystalline Silicon Solar Cell Under Low-Energy (< 200 keV) Proton Irradiation

    Science.gov (United States)

    Oliullah, Md.; Liu, J. Y.; Song, P.; Wang, Y.

    2018-06-01

    A three-layer theoretical model is developed for the characterization of the electronic transport properties (lifetime τ, diffusion coefficient D, and surface recombination velocity s) with energetic particle irradiation on solar cells using non-contact photocarrier radiometry. Monte Carlo (MC) simulation is carried out to obtain the depth profiles of the proton irradiation layer at different low energies (solar cells are investigated under different low-energy proton irradiation, and the carrier transport parameters of the three layers are obtained by best-fitting of the experimental results. The results show that the low-energy protons have little influence on the transport parameters of the non-irradiated layer, but high influences on both of the p and n-region irradiation layers which are consisted of MC simulation.

  7. Hyperon production in proton-nucleus collisions at a center-of-mass energy of $\\sqrt(S_NN)=41.6 GeV$ at HERA-B and design of silicon microstrip detectors for tracking at LHCb

    CERN Document Server

    Agari, M

    2006-01-01

    The topics of this thesis are the measurements of hyperon production in protonnucleus collisions at ps = 41.6 GeV with the Hera-B detector located at DESY, Hamburg (Germany), and the design of silicon microstrip sensors for the LHCb experiment at CERN, Geneva (Switzerland), and hyperons and their antiparticles were reconstructed from 113.5A.106 inelastic collisions of protons with fixed carbon, titanium and tungsten targets. With these samples, antiparticle-to-particle ratios, cross sections integrated for the accessible kinematic region of Hera-B and single differential cross sections as function of transverse momentum, $d\\sigma /dp^{2}_{T}$ (for and) and rapidity, $d\\sigma /dy$ (for only), have been been measured as well as the dependence of these quantities on the atomic number of the target nucleus, as parameterized using the Glauber model. The obtained ratios follow the same trend as found for the energy dependence of measurements from nucleus-nucleus collisions. Silicon microstrip sensors have been desi...

  8. Characterization of the energy distribution of neutrons generated by 5 MeV protons on a thick beryllium target at different emission angles

    Energy Technology Data Exchange (ETDEWEB)

    Agosteo, S. [Politecnico di Milano, Dipartimento di Energia, Piazza Leonardo da Vinci 32, 20133 Milano (Italy)] [Istituto Nazionale di Fisica Nucleare, Sezione di Milano, via Celoria 16, 20133 Milano (Italy); Colautti, P., E-mail: paolo.colautti@lnl.infn.it [INFN, Laboratori Nazionali di Legnaro (LNL), Via dell' Universita, 2, I-35020 Legnaro (PD) (Italy); Esposito, J., E-mail: juan.esposito@tin.it [INFN, Laboratori Nazionali di Legnaro (LNL), Via dell' Universita, 2, I-35020 Legnaro (PD) (Italy); Fazzi, A.; Introini, M.V.; Pola, A. [Politecnico di Milano, Dipartimento di Energia, Piazza Leonardo da Vinci 32, 20133 Milano (Italy)] [Istituto Nazionale di Fisica Nucleare, Sezione di Milano, via Celoria 16, 20133 Milano (Italy)

    2011-12-15

    Neutron energy spectra at different emission angles, between 0 Degree-Sign and 120 Degree-Sign from the Be(p,xn) reaction generated by a beryllium thick-target bombarded with 5 MeV protons, have been measured at the Legnaro Laboratories (LNL) of the Italian National Institute for Nuclear Physics research (INFN). A new and quite compact recoil-proton spectrometer, based on a monolithic silicon telescope, coupled to a polyethylene converter, was efficiently used with respect to the traditional Time-of-Flight (TOF) technique. The measured distributions of recoil-protons were processed through an iterative unfolding algorithm in order to determine the neutron energy spectra at all the angles accounted for. The neutron energy spectrum measured at 0 Degree-Sign resulted to be in good agreement with the only one so far available at the requested energy and measured years ago with TOF technique. Moreover, the results obtained at different emission angles resulted to be consistent with detailed past measurements performed at 4 MeV protons at the same angles by TOF techniques.

  9. MeV ion induced damage production and accumulation in silicon

    International Nuclear Information System (INIS)

    Suzuki, Motoyuki; Okazaki, Makoto; Shin, Kazuo; Takagi, Ikuji; Yoshida, Koji

    1993-01-01

    Measurement and analysis were made for radiation damages in silicon induced by MeV ions. A single crystal silicon was bombarded by 800 keV O + and 700 keV Si + with the dose from 2x10 15 up to 8x10 15 cm -2 . And defects induced by the ion bombardments were observed by the channeling method. Some new modifications were made to the analysis of the channeling RBS spectrum so that the accuracy of the unfolded defect distribution may be improved. A new model of point-defect clustering and amorphous formation was proposed, which well reproduced the observed defect distribution in silicon. (author)

  10. Degradation of the photoluminescence of porous silicon caused by 60Co γ radiation

    International Nuclear Information System (INIS)

    Astrova, E.V.; Emtsev, V.V.; Lebedev, A.A.

    1995-01-01

    Two series of experiments were carried out. In the first, as-grown porous silicon was bombarded with 60 Co γ radiation to a dose ∼ 10 20 cm -2 . The photoluminescence intensity fell off by a factor ∼ 50 as a result, although the peak of the band underwent essentially no shift. In the second series, single-crystal silicon was bombarded to the same dose, and then porous silicon was fabricated on it. The intensity and spectra of these samples were the same as usual. Possible degradation mechanisms are discussed. 12 refs., 2 figs

  11. RBS and NRA damage analysis on PFA films bombarded with hydrogen

    Energy Technology Data Exchange (ETDEWEB)

    Parada, Marco A.; Petchevist, Paulo C.D.; Minamisawa, Renato A.; Almeida, Adelaide de [Sao Paulo Univ., SP (Brazil). Inst. de Fisica]. E-mail: dalmeida@ffclrp.usp.br; Muntele, Claudiu I.; Zimmerman, Robert L.; Ila, Daryush [A and M University, Normal, AL (United States). Center for Irradiation of Materials]. E-mail: ila@cim.aamu.edu

    2005-07-01

    The fluoropolymer PFA (Tetrafluoroethylene-per-fluoromethoxy ethylene) is a conventional thermoplastic used in civil engineering applications such as anti-adherent coatings and concrete additives. It is also candidate materials for radiation dosimetry with applications in medical physics. When such a polymer is exposed to ionizing radiation, it can suffers damages that depend on the type, energy, and intensity of the radiation. We present results on the damage caused by 1 MeV protons at fluences of 10{sup 13}, 10{sup 14}, 10{sup 15}, and 10{sup 16} protons/cm{sup 2}. The energy deposited during such hydrogen bombardment breaks the polymeric chains with the release of fluorine in amounts directly proportional to the amount of deposited energy. Virgin samples were first analyzed by RBS. Subsequent damage was then profiled by monitoring the alpha emission spectrum, resulting from the nuclear reaction: {sup 19}F(p,{alpha}{gamma}){sup 16}O induced by 1.38 MeV protons on the remaining fluorine content of damaged polymer samples. (author)

  12. RBS and NRA damage analysis on PFA films bombarded with hydrogen

    International Nuclear Information System (INIS)

    Parada, Marco A.; Petchevist, Paulo C.D.; Minamisawa, Renato A.; Almeida, Adelaide de; Muntele, Claudiu I.; Zimmerman, Robert L.; Ila, Daryush

    2005-01-01

    The fluoropolymer PFA (Tetrafluoroethylene-per-fluoromethoxy ethylene) is a conventional thermoplastic used in civil engineering applications such as anti-adherent coatings and concrete additives. It is also candidate materials for radiation dosimetry with applications in medical physics. When such a polymer is exposed to ionizing radiation, it can suffers damages that depend on the type, energy, and intensity of the radiation. We present results on the damage caused by 1 MeV protons at fluences of 10 13 , 10 14 , 10 15 , and 10 16 protons/cm 2 . The energy deposited during such hydrogen bombardment breaks the polymeric chains with the release of fluorine in amounts directly proportional to the amount of deposited energy. Virgin samples were first analyzed by RBS. Subsequent damage was then profiled by monitoring the alpha emission spectrum, resulting from the nuclear reaction: 19 F(p,αγ) 16 O induced by 1.38 MeV protons on the remaining fluorine content of damaged polymer samples. (author)

  13. Measurement of neutron spectra through composed material block bombarded with D-T neutrons

    Energy Technology Data Exchange (ETDEWEB)

    Zhu, T.H. [Institute of Nuclear Physics and Chemistry, China Academy of Engineering Physics, P.O. BOX 919-213, Mian yang 621900 (China)], E-mail: zhutonghua@yahoo.com.cn; Liu, R.; Lu, X.X.; Jiang, L.; Wen, Z.W.; Wang, M.; Lin, J.F. [Institute of Nuclear Physics and Chemistry, China Academy of Engineering Physics, P.O. BOX 919-213, Mian yang 621900 (China)

    2009-12-15

    A 2-dimensional composed material assembly made of the iron and hydric block has been established. The neutron spectra from the assembly bombarded with 14-MeV neutrons at neutron generator have been obtained using the proton recoil technique with a stillbene detector. The detector positions were selected at the 60 deg., 120 deg., 180 deg. on the surface of the iron spherical shell. The background neutron spectra consisted of background and room return radiation were subtracted with combination of methods of experimental shielding and MCNP calculation. The uncertainty of results was 6.3-7.4%. The experiment results were analyzed and simulated by MCNP code and two data library. The difference is integral neutron flux (background neutron subtracted) of measured results greater than calculations with maximum of 21.2% in the range of 1-16 MeV.

  14. Molecular projectile effects for kinetic electron emission from carbon- and metal-surfaces bombarded by slow hydrogen ions

    Science.gov (United States)

    Cernusca, S.; Winter, HP.; Aumayr, F.; Díez Muiño, R.; Juaristi, J. I.

    2003-04-01

    Total yields for kinetic electron emission (KE) have been determined for impact of hydrogen monomer-, dimer- and trimer-ions (impact energy armour in magnetic fusion devices. The data are compared with KE yields for impact of same projectile ions on atomically clean highly oriented pyrolytic graphite and polycrystalline gold. We discuss KE yields for the different targets if bombarded by equally fast molecular and atomic ions in view to "projectile molecular effects" (different yields per proton for equally fast atomic and molecular ions), which are expected from calculated electronic projectile energy losses in these target materials.

  15. Impact and spreading behavior of cluster atoms bombarding substrates

    Energy Technology Data Exchange (ETDEWEB)

    Fang, Te-Hua, E-mail: fang.tehua@msa.hinet.net [Institute of Mechanical and Electromechanical Engineering, National Formosa University, Yunlin 632, Taiwan (China); Kang, Shao-Hui; Liao, Jia-Hung [Institute of Mechanical and Electromechanical Engineering, National Formosa University, Yunlin 632, Taiwan (China)

    2009-12-15

    The purpose of this study is to investigate the behavior of copper cluster atoms bombarding a substrate using molecule dynamics based on tight-binding second moment approximation (TB-SMA) potential. The simulated results show that a crater on the substrate surface was created by the impact of the clusters. The variations of kinetic energy of cluster bombardments can be divided into three stages. At the initial impact level, the kinetic energies of the clusters and the substrate were constant. Then, the system went into a sluggish stage of energy variation, in which the kinetic energy of the clusters reduced. In the final stage, the kinetic energy of the system became stable. The high slip vector region around the crater had a disorder damage zone. The symmetry-like cross-slip occurred beneath the top layer of the substrate along the <1 1 0> orientations. The spreading index, temperature, and potential functions that affect the bombardments are also discussed.

  16. Impact and spreading behavior of cluster atoms bombarding substrates

    International Nuclear Information System (INIS)

    Fang, Te-Hua; Kang, Shao-Hui; Liao, Jia-Hung

    2009-01-01

    The purpose of this study is to investigate the behavior of copper cluster atoms bombarding a substrate using molecule dynamics based on tight-binding second moment approximation (TB-SMA) potential. The simulated results show that a crater on the substrate surface was created by the impact of the clusters. The variations of kinetic energy of cluster bombardments can be divided into three stages. At the initial impact level, the kinetic energies of the clusters and the substrate were constant. Then, the system went into a sluggish stage of energy variation, in which the kinetic energy of the clusters reduced. In the final stage, the kinetic energy of the system became stable. The high slip vector region around the crater had a disorder damage zone. The symmetry-like cross-slip occurred beneath the top layer of the substrate along the orientations. The spreading index, temperature, and potential functions that affect the bombardments are also discussed.

  17. Destruction of C60 films by boron ion bombardment

    International Nuclear Information System (INIS)

    Ren Zhongmin; Du Yuancheng; Ying Zhifeng; Xiong Xiaxing; Li Fuming

    1995-01-01

    C 60 films are bombarded by 100 keV boron ion beams at doses ranging from 3x10 14 to 1x10 16 /cm 2 . The bombarded films are analyzed using Fourier transform infrared spectroscopy (FTIR), Raman spectra and X-ray diffraction (XRD) measurements. Most C 60 soccer-balls in the implanted region in the films are found to be broken at a dose over 1x10 15 /cm 2 , while at a dose less than 6x10 14 /cm 2 a few C 60 molecules remain undestroyed and maintain some crystal structure. The results of the analyses suggest a complete disintegration of a C 60 molecule under B + bombardment. ((orig.))

  18. Adhesion of evaporated titanium films to ion-bombarded polyethylene

    International Nuclear Information System (INIS)

    Bodoe, P.; Sundgren, J.

    1986-01-01

    Ti films were deposited onto high-density polyethylene (HDPE) samples by electron-beam evaporation. Prior to film deposition the samples were in situ pretreated by Ar ion bombardment using a sputter ion gun. The adhesion of the films, determined as the pull strength required for film failure, was measured as a function of ion dose. HDPE substrates processed at two different temperatures were examined. The adhesion of the Ti films to HDPE samples processed at roughly-equal150 0 C increased with the ion dose to a steady-state value corresponding to the cohesive strength of the HDPE substrate. The adhesion to the samples processed at roughly-equal200 0 C increased to a maximum and then decreased for further ion bombardment to a level of the same order as that for films deposited onto as-prepared samples. The effects of the ion bombardment upon the HDPE surface chemistry were examined by means of x-ray photoelectron spectroscopy (XPS). The ion bombardment resulted in dehydrogenation and cross linking of the surface region and for prolonged ion bombardment, a graphitelike surface was obtained. The film/substrate interface as well as the initial Ti film growth were examined by XPS analysis. A chemical interaction which resulted in Ti--C bonds was observed at the interface. The Ti film growth followed a pronounced three-dimensional growth mode on as-prepared surfaces whereas the ion bombardment resulted in a change toward a more two-dimensional growth mode. The difference in adhesion behavior for the two types of HDPE substrates was found to be due to a difference in the amounts of low molecular weight products present within the substrates

  19. Ion bombardment induced ripple topography on amorphous solids

    International Nuclear Information System (INIS)

    Carter, G.; Nobes, M.J.; Paton, F.; Williams, J.S.

    1977-01-01

    Earlier studies of the ion bombardment induced ripple morphology on the surfaces of amorphous solids when compared with geomorphological effects are shown to possess many similar features. The present study, with 40 keV Ar + ion bombarded Si suggests that analogies are incomplete, however, and that greater similarities with the process of macroscopic sandblasting (corrosion) exist. It is shown that the genesis of wave like structures on Si is from isolated features, which have the appearance of ripple trains, which are faceted. It is suggested that these features result from particle flux enhancement processes near surface dimples generated by stress induced surface lifting. (author)

  20. Computer simulation of the topography evolution on ion bombarded surfaces

    CERN Document Server

    Zier, M

    2003-01-01

    The development of roughness on ion bombarded surfaces (facets, ripples) on single crystalline and amorphous homogeneous solids plays an important role for example in depth profiling techniques. To verify a faceting mechanism based not only on sputtering by directly impinging ions but also on the contribution of reflected ions and the redeposition of sputtered material a computer simulation has been carried out. The surface in this model is treated as a two-dimensional line segment profile. The model describes the topography evolution on ion bombarded surfaces including the growth mechanism of a facetted surface, using only the interplay of reflected and primary ions and redeposited atoms.

  1. Channeling studies of impurity-defect interactions in silicon

    International Nuclear Information System (INIS)

    Wiggers, L.W.

    1978-01-01

    This thesis deals with the mechanism of defect production and interaction of introduced defects with impurity atoms in silicon single crystals. Defects are created by irradiation with energetic light particles (.2 - 3 MeV H + or He + ions). Mostly simple defects like vacancies and interstitials are produced during bombardment. (Auth.)

  2. The influence of diffusion of fluorine compounds for silicon lateral etching

    Energy Technology Data Exchange (ETDEWEB)

    Verdonck, Patrick; Goodyear, Alec; Braithwaite, Nicholas St.John

    2004-07-01

    In an earlier study, it was proposed that long-range surface transport of fluorine atoms could precede the eventual binding to a silicon atom. The rate of binding increases if the silicon is bombarded with high energy ions. In this study, the lateral etching of a silicon layer, sandwiched between two silicon dioxide layers, was studied in order to investigate and extend these hypotheses. The under etching of the silicon layer was higher for wafers which suffered ion bombardment, showing that this mechanism is important even for horizontal etching. At the same time, the thickness of the silicon layer was varied. In all cases, the thinner silicon layer etched much faster then the thicker layer, indicating that fluorine surface transport is much more important than re-emission for these processes. The etch rate increase with ion bombardment can be explained by the fact that part of the energy of the incoming ions is transferred to the fluorine compounds which are on the horizontal surfaces and that ion bombardment enhances the fluorine surface transport.

  3. Silicone metalization

    Energy Technology Data Exchange (ETDEWEB)

    Maghribi, Mariam N. (Livermore, CA); Krulevitch, Peter (Pleasanton, CA); Hamilton, Julie (Tracy, CA)

    2008-12-09

    A system for providing metal features on silicone comprising providing a silicone layer on a matrix and providing a metal layer on the silicone layer. An electronic apparatus can be produced by the system. The electronic apparatus comprises a silicone body and metal features on the silicone body that provide an electronic device.

  4. Fertile transgenic wheat from microprojectile bombardment of scutellar tissue.

    Science.gov (United States)

    Becker, D; Brettschneider, R; Lörz, H

    1994-02-01

    A reproducible transformation system for hexaploid wheat was developed based on particle bombardment of scutellar tissue of immature embryos. Particle bombardment was carried out using a PDS 1000/He gun. Plant material was bombarded with the plasmid pDB1 containing the beta-glucuronidase gene (uidA) under the control of the actin-1 promoter of rice, and the selectable marker gene bar (phosphinothricin acetyltransferase) under the control of the CaMV 35S promoter. Selection was carried out using the herbicide Basta (Glufosinate-ammonium). From a total number of 1050 bombarded immature embryos, in seven independent transformation experiments, 59 plants could be regenerated. Putative transformants were screened for enzyme activity by the histochemical GUS assay using cut leaf material and by spraying the whole plants with an aqueous solution of the herbicide Basta. Twelve regenerants survived Basta spraying and showed GUS-activity. Southern-blot analysis indicated the presence of introduced foreign genes in the genomic DNA of the transformants and both marker genes were present in all plants analysed. To date, four plants have been grown to maturity and set seed. Histochemically stained pollen grains showed a 1:1 segregation of the uidA gene in all plants tested. A 3:1 segregation of the introduced genes was demonstrated by enzyme activity tests and Southern blot analysis of R1 plants.

  5. Target bombardment by ion beams generated in the Focus experiment

    International Nuclear Information System (INIS)

    Bernard, Alain; Coudeville, Alain; Garconnet, J.-P.; Jolas, A.; Mascureau, J. de; Nazet, Christian.

    1976-01-01

    In a Mather-Focus experiment, it was shown that 80% of the neutron emitted were generated through bombardment. The apparatus was operated with various targets at a distance of 13mm from the anode. In the low pressure regime, a deuteron beam of high energy was produced. Its emission duration was measured using a CD 2 target [fr

  6. Stable transformation of the oomycete, Phytophthora infestans, using microprojectile bombardment

    DEFF Research Database (Denmark)

    Cvitanich, Cristina; Judelson, Howard S.

    2003-01-01

    Germinated asexual sporangia, zoospores, and mycelia of Phytophthora infestans were transformed to G418-resistance by microprojectile bombardment. After optimization, an average of 14 transformants/shot were obtained, using 10(6) germinated sporangia and gold particles coated with 1 microg...

  7. Ion bombardment effect on surface state of metal

    International Nuclear Information System (INIS)

    Vaulin, E.P.; Georgieva, N.E.; Martynenko, T.P.

    1990-01-01

    The effect of slow argon ion bombardment on the surface microstructure of polycrystalline copper as well as the effect of surface state on sputtering of D-16 polycrystalline alloy are experimentally studied. Reduction of copper surface roughness is observed. It is shown that the D-16 alloy sputtering coefficient is sensitive to the surface state within the limits of the destructed surface layer

  8. Diffusion processes in bombardment-induced surface topography

    International Nuclear Information System (INIS)

    Robinson, R.S.

    1984-01-01

    A treatment is given of the problem of surface diffusion processes occurring during surface topography development, whenever a surface is simultaneously seeded with impurities and ion bombarded. The development of controllable topography and the importance of surface diffusion parameters, which can be obtained during these studies, are also analyzed. 101 refs.; 7 figs.; 2 tabs

  9. On the reasons for bombarding uranium with slow neutrons

    International Nuclear Information System (INIS)

    Xu Diyu

    1997-01-01

    Form the concepts of slow neutrons, the binding energy and the excitation energy of complex nuclei, and the activation energy in nuclear fission, the four reasons for bombarding uranium with slow neutrons are summed up. Not only the reasons for uranium fission are brought in light, but also the micromechanism is dealt with

  10. Dating Howardite Melt Clasts: Evidence for an Extended Vestan Bombardment?

    Science.gov (United States)

    Cartwright, J. A.; Hodges, K. V.; Wadhwa, M.; Mittlefehldt, D. W.

    2016-01-01

    Howardites are polymict breccias that, together with eucrites and diogenites (HED), likely originate from the vestan surface (regolith/ megaregolith), and display a heterogeneous distribution of eucritic and diogenitic material. Melt clasts are also present alongside other regolithic features within howardites, and are noteworthy for their compositional variability and appearance. Melt clasts formed by impact events provide a snapshot of the timings and conditions of surface gardening and bombardment on the vestan surface. By dating such clasts, we aim to better constrain the timings of impact events on Vesta, and to establish whether the impact flux in the asteroid belt was similar to that on the Moon. As the Moon is used as the basis for characterising impact models of the inner solar system, it is necessary to verify that apparent wide-scale events are seen in other planetary bodies. In particular, the observed clustering of Apollo melt clast ages between 3.8-4.0 Ga has led to two hypotheses: 1) The Moon was subjected to a sudden event - 'Lunar Cataclysm' or period of 'Late Heavy Bombardment' (LHB), 2) The age cluster represents the end of an epoch of declining bombardment or 'Heavy Bombardment. No consensus has emerged regarding one or other hypothesis. We are testing these hypotheses by seeking evidence for such events in materials other than those derived from the Moon.

  11. Advances in fast-atom-bombardment mass spectroscopy

    International Nuclear Information System (INIS)

    Hemling, M.E.

    1986-01-01

    A comparison of fast atom bombardment and field desorption mass spectrometry was made to determine relative sensitivity and applicability. A series of glycosphingolipids and a series of protected oligonucleotides of known structure were analyzed to ascertain the potential utility of fast atom bombardment mass spectrometry in the structural elucidation of novel compounds in these classes. Negative ion mass markers were also developed. Fast atom bombardment was found to be one-to-two orders of magnitude more sensitive than field desorption based on the analysis of a limited number of compounds from several classes. Superior sensitivity was not universal and field desorption was clearly better in certain cases. In the negative ion mode in particular, fast atom bombardment was found to be a useful tool for the determination of the primary structure of glycosphingolipids and oligonucleotides. Carbohydrate sequence and branching information, and a fatty acid and lipid base composition were readily obtained from the mass spectra of glycosphingolipids while bidirectional nucleotide sequence, nucleotide base, and protecting group assignments were obtained for oligonucleotides. Based on this knowledge, a tentative structure of a human peripheral nervous system glycosphingolipid implicated in certain cases of disorders such as amyotrophic lateral sclerosis, Lou Gehrig's Disease, was proposed. Suitable negative ion mass markers were found in dispersions of poly(ethylene) and poly(propylene)glycols in a triethylenetetramine matrix, a matrix which also proved useful in the analysis of glycosphingolipids. These polyglycol dispersions provided ions for calibration to 2300 daltons

  12. Fast atom bombardment mass spectrometry of condensed tannin sulfonate derivatives

    Science.gov (United States)

    J.J. Karchesy; L.Y. Foo; Richard W. Hemingway; E. Barofsky; D.F. Barofsky

    1989-01-01

    Condensed tannin sulfonate derivatives were studied by fast atom bombardment mass spectrometry (FAB-MS) to assess the feasibility of using this technique for determining molecular weight and structural information about these compounds. Both positive- and negative-ion spectra provided useful data with regard to molecular weight, cation species present, and presence of...

  13. Neutron yields from bombardment of α-particles

    International Nuclear Information System (INIS)

    Nakasima, Ryuzo

    1982-09-01

    The thick target neutron yields from bombardment of <10 MeV α-particles are calculated based on the reaction cross sections. The results for the elements of Z < 15 are compared with existing calculated or measured neutron yield data. For the elements of 16 < Z < 50, elemental or isotopic neutron yields are calculated if the cross section data are available. (author)

  14. Investigation of beam effect on porous silicon

    Energy Technology Data Exchange (ETDEWEB)

    Kotai, E. E-mail: kotai@rmki.kfki.hu; Paszti, F.; Szilagyi, E

    2000-03-01

    When performing Rutherford Backscattering Spectroscopy (RBS) measurements combined with channeling on 'columnar' porous silicon (PS) samples with beam aligned to the direction of the pores, a strong beam effect was observed. The minimum yield as a function of the beam dose for different porous samples was compared with the yield measured on single crystal silicon. It was demonstrated that the beam effect strongly depends on the porosity of the sample. Bombardment in the random direction caused about 10% higher change in the minimum yield than in the channel direction.

  15. Investigation of beam effect on porous silicon

    International Nuclear Information System (INIS)

    Kotai, E.; Paszti, F.; Szilagyi, E.

    2000-01-01

    When performing Rutherford Backscattering Spectroscopy (RBS) measurements combined with channeling on 'columnar' porous silicon (PS) samples with beam aligned to the direction of the pores, a strong beam effect was observed. The minimum yield as a function of the beam dose for different porous samples was compared with the yield measured on single crystal silicon. It was demonstrated that the beam effect strongly depends on the porosity of the sample. Bombardment in the random direction caused about 10% higher change in the minimum yield than in the channel direction

  16. Anomalous microstructural changes in III-nitrides under ion bombardment

    International Nuclear Information System (INIS)

    Kucheyev, S.O.; Williams, J.S.; Jagadish, C.

    2002-01-01

    Full text: Group-III nitrides (GaN, AlGaN, and InGaN) are currently a 'hot topic' in the physics and material research community due to very important technological applications of these materials in (opto)electronics. In the fabrication of III-nitride-based devices, ion bombardment represents a very attractive processing tool. However, ion-beam-produced lattice disorder and its undesirable consequences limit technological applications of ion implantation. Hence, studies of ion-beam-damage processes in Ill-nitrides are not only physically interesting but also technologically important. In this study, wurtzite GaN, AlGaN, and InGaN films exposed to ion bombardment under a wide range of irradiation conditions are studied by a combination of transmission electron microscopy (TEM), environmental scanning electron microscopy (ESEM), energy dispersive x-ray spectrometry (EDS), atomic force microscopy (AFM), cathodoluminescence (CL), and Rutherford backscattering/channeling (RBS/C) spectrometry. Results show that, unlike the situation for mature semiconductors such as Si and GaAs, Ill-nitrides exhibit a range of intriguing behavior involving extreme microstructural changes under ion bombardment. In this presentation, the following aspects are discussed: (i) formation of lattice defects during ion bombardment, (ii) ion-beam-induced phase transformations, (iii) ion-beam-produced stoichiometric imbalance and associated material decomposition, and (iv) an application of charging phenomena during ESEM imaging for studies of electrical isolation in GaN by MeV light ion irradiation. Emphasis is given to the (powerful) application of electron microscopy techniques for the understanding of physical processes occurring in Ill-nitrides under ion bombardment. Copyright (2002) Australian Society for Electron Microscopy Inc

  17. Characterization of Czochralski silicon detectors

    OpenAIRE

    Luukka, Panja-Riina

    2006-01-01

    This thesis describes the characterization of irradiated and non-irradiated segmented detectors made of high-resistivity (>1 kΩcm) magnetic Czochralski (MCZ) silicon. It is shown that the radiation hardness (RH) of the protons of these detectors is higher than that of devices made of traditional materials such as Float Zone (FZ) silicon or Diffusion Oxygenated Float Zone (DOFZ) silicon due to the presence of intrinsic oxygen (> 5 × 1017 cm−3). The MCZ devices therefore present an interesting ...

  18. Ion bombardment simulation: a review related to fusion radiation damage

    International Nuclear Information System (INIS)

    Brimhall, J.L.

    1975-01-01

    Prime emphasis is given to reviewing the ion bombardment data on the refractory metals molybdenum, niobium and vanadium which have been proposed for use in advanced fusion devices. The temperature and dose dependence of the void parameters are correlated among these metals. The effect of helium and hydrogen gas on the void parameters is also included. The similarities and differences of the response of these materials to high dose, high temperature radiation damage are evaluated. Comparisons are made with results obtained from stainless steel and nickel base alloys. The ion bombardment data is then compared and correlated, as far as possible, with existing neutron data on the refractory metals. The theoretically calculated damage state produced by neutrons and ions is also briefly discussed and compared to experimental data wherever possible. The advantages and limitations of ion simulation in relation to fusion radiation damage are finally summarized

  19. A molecular dynamics study of helium bombardments on tungsten nanoparticles

    Science.gov (United States)

    Li, Min; Hou, Qing; Cui, Jiechao; Wang, Jun

    2018-06-01

    Molecular dynamics simulations were conducted to study the bombardment process of a single helium atom on a tungsten nanoparticle. Helium atoms ranging from 50 eV to 50 keV were injected into tungsten nanoparticles with a diameter in the range of 2-12 nm. The retention and reflection of projectiles and sputtering of nanoparticles were calculated at various times. The results were found to be relative to the nanoparticle size and projectile energy. The projectile energy of 100 eV contributes to the largest retention of helium atoms in tungsten nanoparticles. The most obvious difference in reflection exists in the range of 3-10 keV. Around 66% of sputtering atoms is in forward direction for projectiles with incident energy higher than 10 keV. Moreover, the axial direction of the nanoparticles was demonstrated to influence the bombardment to some degree.

  20. Development of pits and cones on ion bombarded copper

    International Nuclear Information System (INIS)

    Tanovic, L.A.; Carter, G.; Nobes, M.J.; Whitton, I.L.; Williams, J.S.

    1980-01-01

    The formation of pits and cones on Ar ion bombarded copper has been studied. Carefully polished surfaces of large grained 99.999% pure copper crystals have been bombarded at normal incidence with 40 keV argon ions. The cone formation has been investigated for annealed and non-annealed crystals at room temperature and at 30 K and in the case of monocrystal and polycrystal samples. Although in the most other studies the presence of impurities is as a necessary condition for generation of cones and pits the obtained experimental results show that under certain conditions these features are formed on clean surfaces. It is shown that the dominant parameter in the production of cones on copper is the crystal orientation [ru

  1. Diffusion processes in bombardment-induced surface topography

    International Nuclear Information System (INIS)

    Robinson, R.S.

    1984-01-01

    The bombardment of surfaces with moderate energy ions can lead to the development of various micron-sized surface structures. These structures include ridges, ledges, flat planes, pits and cones. The causal phenomena in the production of these features are sputtering, ion reflection, redeposition of sputtered material, and surface diffusion of both impurity and target-atom species. The authors concentrate on the formation of ion bombardment-induced surface topography wherein surface diffusion is a dominant process. The most thoroughly understood aspect of this topography development is the generation of cone-like structures during sputtering. The formation of cones during sputtering has been attributed to three effects. These are: (1) the presence of asperities, defects, or micro-inclusions in the surface layers, (2) the presence of impurities on the surfaces, and (3) particular crystal orientations. (Auth.)

  2. Miniature electron bombardment evaporation source: evaporation rate measurement

    International Nuclear Information System (INIS)

    Nehasil, V.; Masek, K.; Matolin, V.; Moreau, O.

    1997-01-01

    Miniature electron beam evaporation sources which operate on the principle of vaporization of source material, in the form of a tip, by electron bombardment are produced by several companies specialized in UHV equipment. These sources are used primarily for materials that are normally difficult to deposit due to their high evaporation temperature. They are appropriate for special applications such as heteroepitaxial thin film growth requiring a very low and well controlled deposition rate. A simple and easily applicable method of evaporation rate control is proposed. The method is based on the measurement of ion current produced by electron bombardment of evaporated atoms. The absolute evaporation flux values were measured by means of the Bayard-Alpert ion gauge, which enabled the ion current vs evaporation flux calibration curves to be plotted. (author). 1 tab., 4 figs., 6 refs

  3. Fe embedded in ice: The impacts of sublimation and energetic particle bombardment

    Science.gov (United States)

    Frankland, Victoria L.; Plane, John M. C.

    2015-05-01

    Icy particles containing a variety of Fe compounds are present in the upper atmospheres of planets such as the Earth and Saturn. In order to explore the role of ice sublimation and energetic ion bombardment in releasing Fe species into the gas phase, Fe-dosed ice films were prepared under UHV conditions in the laboratory. Temperature-programmed desorption studies of Fe/H2O films revealed that no Fe atoms or Fe-containing species co-desorbed along with the H2O molecules. This implies that when noctilucent ice cloud particles sublimate in the terrestrial mesosphere, the metallic species embedded in them will coalesce to form residual particles. Sputtering of the Fe-ice films by energetic Ar+ ions was shown to be an efficient mechanism for releasing Fe into the gas phase, with a yield of 0.08 (Ar+ energy=600 eV). Extrapolating with a semi-empirical sputtering model to the conditions of a proton aurora indicates that sputtering by energetic protons (>100 keV) should also be efficient. However, the proton flux in even an intense aurora will be too low for the resulting injection of Fe species into the gas phase to compete with that from meteoric ablation. In contrast, sputtering of the icy particles in the main rings of Saturn by energetic O+ ions may be the source of recently observed Fe+ in the Saturnian magnetosphere. Electron sputtering (9.5 keV) produced no detectable Fe atoms or Fe-containing species. Finally, it was observed that Fe(OH)2 was produced when Fe was dosed onto an ice film at 140 K (but not at 95 K). Electronic structure theory shows that the reaction which forms this hydroxide from adsorbed Fe has a large barrier of about 0.7 eV, from which we conclude that the reaction requires both translationally hot Fe atoms and mobile H2O molecules on the ice surface.

  4. Thermo-mechanical design aspects of mercury bombardment ion thrusters.

    Science.gov (United States)

    Schnelker, D. E.; Kami, S.

    1972-01-01

    The mechanical design criteria are presented as background considerations for solving problems associated with the thermomechanical design of mercury ion bombardment thrusters. Various analytical procedures are used to aid in the development of thruster subassemblies and components in the fields of heat transfer, vibration, and stress analysis. Examples of these techniques which provide computer solutions to predict and control stress levels encountered during launch and operation of thruster systems are discussed. Computer models of specific examples are presented.

  5. Quantification of steroid conjugates using fast atom bombardment mass spectrometry

    International Nuclear Information System (INIS)

    Gaskell, S.J.

    1990-01-01

    Fast atom bombardment/mass spectrometry or liquid secondary ion mass spectrometry provides the capability for direct analysis of steroid conjugates (sulfates, glucuronides) without prior hydrolysis or derivatization. During the analysis of biologic extracts, limitations on the sensitivity of detection arise from the presence of co-extracted material which may suppress or obscure the analyte signal. A procedure is described for the quantitative determination of dehydroepiandrosterone sulfate in serum which achieved selective isolation of the analyte using immunoadsorption extraction and highly specific detection using tandem mass spectrometry. A stable isotope-labeled analog [( 2H2]dehydroepiandrosterone sulfate) was used as internal standard. Fast atom bombardment of dehydroepiandrosterone sulfate yielded abundant [M-H]- ions that fragmented following collisional activation to give HSO4-; m/z 97. During fast atom bombardment/tandem mass spectrometry of serum extracts, a scan of precursor ions fragmenting to give m/z 97 detected dehydroepiandrosterone sulfate and the [2H2]-labeled analog with a selectivity markedly superior to that observed using conventional mass spectrometry detection. Satisfactory agreement was observed between quantitative data obtained in this way and data obtained by gas chromatography/mass spectrometry of the heptafluorobutyrates of dehydroepiandrosterone sulfate and [2H2]dehydroepiandrosterone sulfate obtained by direct derivatization. 21 refs

  6. Proton therapy

    International Nuclear Information System (INIS)

    Smith, Alfred R

    2006-01-01

    Proton therapy has become a subject of considerable interest in the radiation oncology community and it is expected that there will be a substantial growth in proton treatment facilities during the next decade. I was asked to write a historical review of proton therapy based on my personal experiences, which have all occurred in the United States, so therefore I have a somewhat parochial point of view. Space requirements did not permit me to mention all of the existing proton therapy facilities or the names of all of those who have contributed to proton therapy. (review)

  7. Positron probing of open vacancy volume of phosphorus-vacancy complexes in float-zone n-type silicon irradiated by 0.9-MeV electrons and by 15-MeV protons

    Energy Technology Data Exchange (ETDEWEB)

    Arutyunov, Nikolay [Department of Physics, Martin Luther University Halle (Germany); Ioffe Physico-Technical Institute, St. Petersburg (Russian Federation); Institute of Ion-Plasma and Laser Technologies (Institute of Electronics), Tashkent (Uzbekistan); Emtsev, Vadim; Oganesyan, Gagik [Ioffe Physico-Technical Institute, St. Petersburg (Russian Federation); Elsayed, Mohamed [Department of Physics, Martin Luther University Halle (Germany); Faculty of Science, Department of Physics, Minia University (Egypt); Krause-Rehberg, Reinhard [Department of Physics, Martin Luther University Halle (Germany); Abrosimov, Nikolay [Leibniz Institute for Crystal Growth, Berlin (Germany); Kozlovski, Vitalii [St. Petersburg State Polytechnical University (Russian Federation)

    2017-07-15

    For the first time the samples, cut from the same wafer of crystals of float-zone silicon, n-FZ-Si(P) and n-FZ-Si(Bi), were subjected to irradiation with 0.9-MeV electrons and 15-MeV protons at RT for studying them by low-temperature positron annihilation lifetime spectroscopy. Measurements of Hall effect have been used for the materials characterization. The discussion is focused on the open vacancy volume (V{sub op}) of the thermally stable group-V-impurity-vacancy complexes comprising the phosphorus atoms; the bismuth-related vacancy complexes are briefly considered. The data of positron probing of PV pairs (E-centers), divacancies, and the thermally stable defects in the irradiated n-FZ-Si(P) materials are compared. Beyond a reliable detecting of the defect-related positron annihilation lifetime in the course of isochronal annealing at ∝ 500 C, the recovery of concentration of phosphorus-related shallow donor states continues up to ∝650-700 C. The open vacancy volumes V{sub op} to be characterized by long positron lifetimes Δτ{sub 2} ∝271-289 ps in (gr.-V-atom)-V{sub op} complexes are compared with theoretical data available for the vacancies, τ(V{sub 1}), and divacancies, τ(V{sub 2}). The extended semi-vacancies, 2V{sub s-ext}, and relaxed vacancies, 2V{sub inw}, are proposed as the open volume V{sub op} in (gr.-V-atom)-V{sub op} complexes. It is argued that at high annealing temperature the defect P{sub s}-V{sub op}-P{sub s} is decomposed. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  8. Secondary electron emission in nanostructured porous silicon

    Energy Technology Data Exchange (ETDEWEB)

    Ruano, G D; Ferron, J; Koropecki, R R, E-mail: gdruano@ceride.gov.a [INTEC-UNL-CONICET, Gueemes 3450 - 3000 Santa Fe (Argentina)

    2009-05-01

    We studied the reversible reduction induced by ion bombardment of the secondary electron emission (SEE) yield. This effect has been modelled as due to changes in dynamically sustained dipoles related with ions and electrons penetration ranges. Such charge configuration precludes the escape of electrons from the nanoporous silicon, making the SEE dependent on the flux of impinging ions. Since this dipolar momentum depends on the electric conduction of the porous medium, by controlled oxidation of the nanoporous structure we change the conduction features of the sample, studying the impact on the SEE reduction effect. Li ion bombardment was also used with the intention of changing the parameters determining the effect. FT-IR and Auger electron spectroscopy were used to characterize the oxidation degree of the samples at different depth scales

  9. Silicon detectors

    International Nuclear Information System (INIS)

    Klanner, R.

    1984-08-01

    The status and recent progress of silicon detectors for high energy physics is reviewed. Emphasis is put on detectors with high spatial resolution and the use of silicon detectors in calorimeters. (orig.)

  10. Actinide production in 136Xe bombardments of 249Cf

    International Nuclear Information System (INIS)

    Gregorich, K.E.

    1985-08-01

    The production cross sections for the actinide products from 136 Xe bombardments of 249 Cf at energies 1.02, 1.09, and 1.16 times the Coulomb barrier were determined. Fractions of the individual actinide elements were chemically separated from recoil catcher foils. The production cross sections of the actinide products were determined by measuring the radiations emitted from the nuclides within the chemical fractions. The chemical separation techniques used in this work are described in detail, and a description of the data analysis procedure is included. The actinide production cross section distributions from these 136 Xe + 249 Cf bombardments are compared with the production cross section distributions from other heavy ion bombardments of actinide targets, with emphasis on the comparison with the 136 Xe + 248 Cm reaction. A technique for modeling the final actinide cross section distributions has been developed and is presented. In this model, the initial (before deexcitation) cross section distribution with respect to the separation energy of a dinuclear complex and with respect to the Z of the target-like fragment is given by an empirical procedure. It is then assumed that the N/Z equilibration in the dinuclear complex occurs by the transfer of neutrons between the two participants in the dinuclear complex. The neutrons and the excitation energy are statistically distributed between the two fragments using a simple Fermi gas level density formalism. The resulting target-like fragment initial cross section distribution with respect to Z, N, and excitation energy is then allowed to deexcite by emission of neutrons in competition with fission. The result is a final cross section distribution with respect to Z and N for the actinide products. 68 refs., 33 figs., 6 tabs

  11. High resistivity in InP by helium bombardment

    International Nuclear Information System (INIS)

    Focht, M.W.; Macrander, A.T.; Schwartz, B.; Feldman, L.C.

    1984-01-01

    Helium implants over a fluence range from 10 11 to 10 16 ions/cm 2 , reproducibly form high resistivity regions in both p- and n-type InP. Average resistivities of greater than 10 9 Ω cm for p-type InP and of 10 3 Ω cm for n-type InP are reported. Results are presented of a Monte Carlo simulation of helium bombardment into the compound target InP that yields the mean projected range and the range straggling

  12. M-subshell ionization of U by light-ion bombardment

    International Nuclear Information System (INIS)

    Jesus, A.P.; Ribeiro, J.P.

    1988-01-01

    M X-rays of U were produced by proton, deuteron and alpha-particle bombardment in the energy range of 0.20-1.00 MeV/u. N 6.7 →M 5 ((M subα)),N 6 →M 4 (M β ), N 5 →M 3 (M γ ), N 4 →M 2 and N 2 →M 1 line yields were obtained from a least-squares fit to the spectra and used to convert M X-ray production into M-subshell ionization cross sections. The uncertainty induced by the atomic parameters (X-ray fluorescence yields, Coster-Kronig and radiative transition rates) used in the conversion is discussed. The subshell ionization cross sections are then compared to PWBA values corrected for Coulomb deflection and energy loss according to Brandt and Lapicki, to the semiclassical theoretical values of Kocbach and to relativistic PWBA results, corrected for Coulomb and binding effects, of Chen et al. Intrashell transitions induced by the projectile and multiple ionization are suggested as causes of disagreement between theory and experiment, especially for alpha-particles. It is concluded that theory must go beyond the simple picture of the first-order pertubation approximation to explain M-subshell results and the care must be taken in the choice of wave functions. (author) [pt

  13. Induction of antioxidant enzyme activity and lipid peroxidation level in ion-beam-bombarded rice seeds

    Energy Technology Data Exchange (ETDEWEB)

    Semsang, Nuananong, E-mail: nsemsang@gmail.com [Molecular Biology Laboratory, Department of Biology, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Yu, LiangDeng [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Thailand Center of Excellence in Physics, Commission on Higher Education, 328 Si Ayutthaya Road, Bangkok 10400 (Thailand)

    2013-07-15

    Highlights: ► Ion beam bombarded rice seeds in vacuum. ► Studied seed survival from the ion bombardment. ► Determined various antioxidant enzyme activities and lipid peroxidation level. ► Discussed vacuum, ion species and ion energy effects. ► Attributed the changes to free radical formation due to ion bombardment. -- Abstract: Low-energy ion beam bombardment has been used to mutate a wide variety of plant species. To explore the indirect effects of low-energy ion beam on biological damage due to the free radical production in plant cells, the increase in antioxidant enzyme activities and lipid peroxidation level was investigated in ion-bombarded rice seeds. Local rice seeds were bombarded with nitrogen or argon ion beams at energies of 29–60 keV and ion fluences of 1 × 10{sup 16} ions cm{sup −2}. The activities of the antioxidant enzymes; superoxide dismutase (SOD), catalase (CAT), ascorbate peroxidase (APX), dehydroascorbate reductase (DHAR), glutathione reductase (GR), glutathione S-transferase (GST) and lipid peroxidation level were assayed in the germinated rice seeds after ion bombardment. The results showed most of the enzyme activities and lipid peroxidation levels in both the argon and nitrogen bombarded samples were higher than those in the natural control. N-ion bombardment could induce higher levels of antioxidant enzyme activities in the rice samples than the Ar-ion bombardment. Additional effects due to the vacuum condition were found to affect activities of some antioxidant enzymes and lipid peroxidation level. This study demonstrates that ion beam bombardment and vacuum condition could induce the antioxidant enzyme activity and lipid peroxidation level which might be due to free radical production in the bombarded rice seeds.

  14. Direct evidence for a thermal effect of Ar+ ion bombardment in a conventional sputtering mode

    International Nuclear Information System (INIS)

    Okuyama, F.; Fujimoto, Y.

    1986-01-01

    Evidence is presented that the Ar + ion bombardment for sputtering in Auger electron spectroscopy can heat the target up to 2000 0 C if the target has poor heat conduction. Polycrystalline microneedles of Cr exhibited spherical tips after being exposed to 3 keV Ar + ions, proving that the needle tips were melted by impacting Ar + ions. Microneedles of Mo ion bombarded under the same condition were bent plastically, which perhaps reflects the thermal annealing of the needles during ion bombardment

  15. Molecular projectile effects for kinetic electron emission from carbon- and metal-surfaces bombarded by slow hydrogen ions

    International Nuclear Information System (INIS)

    Cernusca, S.; Winter, H.P.; Aumayr, F.; Diez Muino, R.; Juaristi, J.I.

    2003-01-01

    Total yields for kinetic electron emission (KE) have been determined for impact of hydrogen monomer-, dimer- and trimer-ions (impact energy <10 keV) on atomically clean surfaces of carbon-fiber inforced graphite used as first-wall armour in magnetic fusion devices. The data are compared with KE yields for impact of same projectile ions on atomically clean highly oriented pyrolytic graphite and polycrystalline gold. We discuss KE yields for the different targets if bombarded by equally fast molecular and atomic ions in view to 'projectile molecular effects' (different yields per proton for equally fast atomic and molecular ions), which are expected from calculated electronic projectile energy losses in these target materials

  16. Molecular projectile effects for kinetic electron emission from carbon- and metal-surfaces bombarded by slow hydrogen ions

    CERN Document Server

    Cernusca, S; Aumayr, F; Diez-Muino, R; Juaristi, J I

    2003-01-01

    Total yields for kinetic electron emission (KE) have been determined for impact of hydrogen monomer-, dimer- and trimer-ions (impact energy <10 keV) on atomically clean surfaces of carbon-fiber inforced graphite used as first-wall armour in magnetic fusion devices. The data are compared with KE yields for impact of same projectile ions on atomically clean highly oriented pyrolytic graphite and polycrystalline gold. We discuss KE yields for the different targets if bombarded by equally fast molecular and atomic ions in view to 'projectile molecular effects' (different yields per proton for equally fast atomic and molecular ions), which are expected from calculated electronic projectile energy losses in these target materials.

  17. Induction of antioxidant enzyme activity and lipid peroxidation level in ion-beam-bombarded rice seeds

    Science.gov (United States)

    Semsang, Nuananong; Yu, LiangDeng

    2013-07-01

    Low-energy ion beam bombardment has been used to mutate a wide variety of plant species. To explore the indirect effects of low-energy ion beam on biological damage due to the free radical production in plant cells, the increase in antioxidant enzyme activities and lipid peroxidation level was investigated in ion-bombarded rice seeds. Local rice seeds were bombarded with nitrogen or argon ion beams at energies of 29-60 keV and ion fluences of 1 × 1016 ions cm-2. The activities of the antioxidant enzymes; superoxide dismutase (SOD), catalase (CAT), ascorbate peroxidase (APX), dehydroascorbate reductase (DHAR), glutathione reductase (GR), glutathione S-transferase (GST) and lipid peroxidation level were assayed in the germinated rice seeds after ion bombardment. The results showed most of the enzyme activities and lipid peroxidation levels in both the argon and nitrogen bombarded samples were higher than those in the natural control. N-ion bombardment could induce higher levels of antioxidant enzyme activities in the rice samples than the Ar-ion bombardment. Additional effects due to the vacuum condition were found to affect activities of some antioxidant enzymes and lipid peroxidation level. This study demonstrates that ion beam bombardment and vacuum condition could induce the antioxidant enzyme activity and lipid peroxidation level which might be due to free radical production in the bombarded rice seeds.

  18. Ultra-low-energy (<10 eV/u) ion beam bombardment effect on naked DNA

    Energy Technology Data Exchange (ETDEWEB)

    Thopan, P. [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Thongkumkoon, P. [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Department of Biology, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Prakrajang, K. [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Faculty of Science, Maejo University, Chiang Mai 50290 (Thailand); Suwannakachorn, D. [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Yu, L.D., E-mail: yuld@thep-center.org [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Thailand Center of Excellence in Physics, Commission on Higher Education, 328 Si Ayutthaya Road, Bangkok 10400 (Thailand)

    2014-05-01

    Highlights: • Decelerated ultra-low energy ion beam bombarded naked DNA. • DNA form change induced by ion bombardment was investigated. • N-ion bombardment at 32 eV induced DNA single and double strand breaks. • Ar-ion bombardment at a-few-hundreds eV induced DNA single strand break. - Abstract: Since ion energy deposition in the ion-bombarded materials dominantly occurs in the low-energy range, it is very interesting to know effects from ultra-low-energy ion interaction with DNA for understanding ion-beam-induced genetic mutation. Tens-keV Ar- and N-ion beams were decelerated to ultra-low energy ranging from 20 to 100 eV, or only a few to 10 eV/u, to bombard naked plasmid DNA. The bombarded DNA was analyzed using gel electrophoresis for DNA form changes. The original DNA supercoiled form was found to change to relaxed and linear forms, indicating single or double strand breaks after bombarded by tens-eV ion beam. N-ion beam was found more effective in inducing DNA change and mutation than Ar-ion beam. The study demonstrated that the ion bombardment with energy as low as several-tens eV was able to break DNA strands and thus potentially to cause genetic modification of biological cells. The experimental results were discussed in terms of direct atomic collision between the ions and DNA atoms.

  19. Ultra-low-energy (<10 eV/u) ion beam bombardment effect on naked DNA

    International Nuclear Information System (INIS)

    Thopan, P.; Thongkumkoon, P.; Prakrajang, K.; Suwannakachorn, D.; Yu, L.D.

    2014-01-01

    Highlights: • Decelerated ultra-low energy ion beam bombarded naked DNA. • DNA form change induced by ion bombardment was investigated. • N-ion bombardment at 32 eV induced DNA single and double strand breaks. • Ar-ion bombardment at a-few-hundreds eV induced DNA single strand break. - Abstract: Since ion energy deposition in the ion-bombarded materials dominantly occurs in the low-energy range, it is very interesting to know effects from ultra-low-energy ion interaction with DNA for understanding ion-beam-induced genetic mutation. Tens-keV Ar- and N-ion beams were decelerated to ultra-low energy ranging from 20 to 100 eV, or only a few to 10 eV/u, to bombard naked plasmid DNA. The bombarded DNA was analyzed using gel electrophoresis for DNA form changes. The original DNA supercoiled form was found to change to relaxed and linear forms, indicating single or double strand breaks after bombarded by tens-eV ion beam. N-ion beam was found more effective in inducing DNA change and mutation than Ar-ion beam. The study demonstrated that the ion bombardment with energy as low as several-tens eV was able to break DNA strands and thus potentially to cause genetic modification of biological cells. The experimental results were discussed in terms of direct atomic collision between the ions and DNA atoms

  20. Use of positive ion fast atom bombardment mass spectrometry for rapid identification of a bile alcohol glucuronide isolated from cerebrotendinous xanthomatosis patients

    International Nuclear Information System (INIS)

    Dayal, B.; Salen, G.; Tint, G.S.; Shefer, S.; Benz, S.W.

    1990-01-01

    The identification of a major biliary and plasma bile alcohol glucuronide, 5 beta-cholestane-3 alpha, 7 alpha, 12 alpha, 25-tetrol-3-0-beta-D-glucuronide, present in cerebrotendinous xanthomatosis (CTX) patients, was investigated by positive ion fast atom bombardment mass spectrometry (FAB-MS). The spectrum was characterized by abundant ions formed by attachment of a proton, [M + H]+, or of alkali ions, [M + Na]+ and [M + 39K]+, to the glucuronide salt. These ions allowed an unambiguous deduction of the molecular weight of the sample. It is suggested that FAB-MS could be used in the rapid diagnosis of CTX

  1. Syntheses of deuterated leu-enkephalins and their use as internal standards for the quantification of leu-enkephalin by fast atom bombardment mass spectrometry

    Energy Technology Data Exchange (ETDEWEB)

    Benfenati, E. (Istituto di Ricerche Farmacologiche Mario Negri, Bergamo (Italy) Istituto di Ricerche Farmacologiche Mario Negri, Milan (Italy)); Icardi, G.; Chen, S. (Istituto di Ricerche Farmacologiche Mario Negri, Bergamo (Italy)); Fanelli, R. (Istituto di Ricerche Farmacologiche Mario Negri, Milan (Italy))

    1990-04-01

    We have developed a synthetic method for the preparation of di- and pentadeuterated leu-enkephalin (LE), Tyr-Gly-Gly-Phe-Leu, by proton-deuterium exchange using CF[sub 3]COOO[sup 2]H. Four to six deuterium atoms are introduced using a reaction temperature of 120[sup o]C and if 5% of [sup 2]H[sub 2]O is added the di-deuterated LE is obtained. These deuterated compounds are used as internal standards to plot calibration curves of LE using fast atom bombardment mass spectrometry. (author).

  2. Inelastic proton scattering at medium energy

    International Nuclear Information System (INIS)

    Love, W.G.

    1980-01-01

    Some of the most essential characteristics of the nucleon-nucleon interaction for probing nuclear structure at bombarding energies between 100 and 800 MeV are considered. With a local representation of the on-shell N-N t-matrix, data for a variety of specific transitions at IUCF and LAMPF energies are discussed with an emphasis on the nuclear structure information sampled by proton scattering. The importance of incorporating constraints on nuclear structure imposed by electron scattering is stressed. Some rather unique aspects of the (p,n) reaction at intermediate energies are discussed in terms of its energy dependence and nuclear structure sum rules. 11 figures

  3. Model to estimate fractal dimension for ion-bombarded materials

    Energy Technology Data Exchange (ETDEWEB)

    Hu, A., E-mail: hu77@purdue.edu; Hassanein, A.

    2014-03-15

    Comprehensive fractal Monte Carlo model ITMC-F (Hu and Hassanein, 2012 [1]) is developed based on the Monte Carlo ion bombardment simulation code, i.e., Ion Transport in Materials and Compounds (ITMC) code (Hassanein, 1985 [2]). The ITMC-F studies the impact of surface roughness on the angular dependence of sputtering yield. Instead of assuming material surfaces to be flat or composed of exact self-similar fractals in simulation, we developed a new method to describe the surface shapes. Random fractal surfaces which are generated by midpoint displacement algorithm and support vector machine algorithm are combined with ITMC. With this new fractal version of ITMC-F, we successfully simulated the angular dependence of sputtering yield for various ion-target combinations, with the input surface roughness exponent directly depicted from experimental data (Hu and Hassanein, 2012 [1]). The ITMC-F code showed good agreement with the experimental data. In advanced, we compare other experimental sputtering yield with the results from ITMC-F to estimate the surface roughness exponent for ion-bombarded material in this research.

  4. Damage and redistribution of impurities by ionic bombardment

    International Nuclear Information System (INIS)

    Tognetti, N.P.

    1982-01-01

    Some aspects of displacement collisions in solids bombarded with ions in the medium energy range have been studied using the backscattering and channelling techniques. The production of lattice damage and the spatial redistribution of atoms within the collision cascade were the two main effects considered and experimentally studied. A comprehensive study of disorder production in GaAs was carried out at 40 K for a variety of ions and ion energies, providing insight into the mechanisms of damage generation from both the macro and microscopic points of view. Experiments on thermal recovery of partially disordered substrates revealed that annealing occurs from approximately 100 K to 300 K. A direct procedure developed for the obtainment of damage profiles from backscattering-channelling measurements is described. The net spatial redistribution of displaced atoms, in combined impurity-matrix substrates was studied and compared with existing theories of ion beam mixing. The Ag-Si system was studied for a wide range of fluence of bombarding Ar + ions. Furthermore, the contribution of atomic mixing in the experimental observation of Ge implantation at high doses into Si is discussed. (M.E.L) [es

  5. Chemical changes in titanate surfaces induced by Ar+ ion bombardment

    International Nuclear Information System (INIS)

    Gonzalez-Elipe, A.R.; Fernandez, A.; Espinos, J.P.; Munuera, G.; Sanz, J.M.

    1992-01-01

    The reduction effects and compositional changes induced by 3.5 keV Ar + bombardment of several titanates (i.e. SrTiO 3 , Al 2 TiO 5 and NiTiO 3 ) have been quantitatively investigated by XPS. In all the samples studied here the original Ti 4+ species were reduced to lower oxidation states (i.e. Ti 3+ and Ti 2+ ), although to a lesser extent than in pure TiO 2 . On the contrary, whereas Sr 2+ and Al 3+ seem to remain unaffected by Ar + bombardment, in agreement with the behaviour of the respective oxides (i.e. SrO and Al 2 O 3 ), Ni 2+ appears more easily reducible to Ni o in NiTiO 3 than in NiO. In addition, other specific differences were observed between the titanates, which reveal the existence of interesting chemical effects related to the presence of the different counter-ions in the titanates. In the case of Al 2 TiO 5 , its Ar + -induced decomposition to form TiO 2 + Al 2 O 3 could be followed by XPS. (Author)

  6. Continuum radiation emitted from transition metals under ion bombardment

    International Nuclear Information System (INIS)

    El Boujlaidi, A.; Kaddouri, A.; Ait El Fqih, M.; Hammoum, K.; Aouchiche, H.

    2012-01-01

    Optical emission of transition metals has been studied during 5 keV Kr + ions bombardment within and without oxygen atmosphere in the colliding chamber. The observed spectra consist of a series of discrete lines superimposed on a broad continuum. Generally, the emission intensity was influenced by the presence of oxygen giving rise to transient effects as well as to an increase in the line intensity. The behaviours of spectral lines were successfully explained in term of electron-transfer process between the excited sputtered atom and the solid surface. In this work, we have focused our study on the continuous radiation emitted during ion bombardment. The experimental results suggest that the continuum emission depends on the nature of metal and very probably related to its electronic structure. The collective deactivation of 3d-shell electrons appears to play a role in the emission of this radiation. The observed enhancement in the presence of oxygen is probably due to a significant contribution of the oxide molecules. (authors)

  7. Universality of spectator fragmentation at relativistic bombarding energies

    International Nuclear Information System (INIS)

    Schuettauf, A.; Woerner, A.

    1996-06-01

    Multi-fragment decays of 129 Xe, 197 Au, and 238 U projectiles in collisions with Be, C, Al, Cu, In, Au, and U targets at energies between E/A=400 MeV and 1000 MeV have been studied with the ALADIN forward-spectrometer at SIS. By adding an array of 84 Si-CsI(Tl) telescopes the solid-angle coverage of the setup was extended to θ lab =16 . This permitted the complete detection of fragments from the projectile-spectator source. The dominant feature of the systematic set of data is the Z bound universality that is obeyed by the fragment multiplicities and correlations. These observables are invariant with respect to the entrance channel if plotted as a function of Z bound , where Z bound is the sum of the atomic numbers Z i of all projectile fragments with Z i ≥2. No significant dependence on the bombarding energy nor on the target mass is observed. The dependence of the fragment multiplicity on the projectile mass follows a linear scaling law. The reasons for and the limits of the observed universality of spectator fragmentation are explored within the realm of the available data and with model studies. It is found that the universal properties should persist up to much higher bombarding energies than explored in this work and that they are consistent with universal features exhibited by the intranuclear cascade and statistical multifragmentation models. (orig.)

  8. Flaking and blistering on He and Ne bombardments

    International Nuclear Information System (INIS)

    Kamada, K.; Naramoto, H.

    1979-01-01

    Large scale exfoliation formed by 300 keV He + bombardment of niobium without any preceding blistering is investigated, in comparison with the blistering due to 450 and 850 keV Ne + bombardments. In-situ observations of the erosion processes were performed in a scanning electron microscope connected to the Van de Graaff. Critical doses of 7.2 x 10 17 He + /cm 2 , 2.4 x 10 17 Ne + /cm 2 and 4.0 x 10 17 Ne + /cm 2 were obtained for the 300 keV He flaking, 450 keV Ne blistering and 850 keV Ne blistering, respectively. The He flaking was presumed to be due to brittle fashion peeling-off of the surface layer by the bending moment driven by the internal gas pressure. The blistering, on the other hand, was presumed to be the result of the ductile fashion spreading of the lenticular bubble in the sub-surface layer. The necessary pressure for the peeling-off of the cover was calculated, and was speculated to be able to work as the driving force for the flaking from its unexpectedly low values. Fractographies under the exfoliations were discussed for both flaking and blistering. (author)

  9. Ion bombardment induced damage in silicon carbide studied by ion beam analytical methods

    Energy Technology Data Exchange (ETDEWEB)

    Szilagyi, E.; Kotai, E. [Magyar Tudomanyos Akademia, Budapest (HU). Research Inst. for Particle and Nuclear Physics (RIPNP); Khanh, N.Q.; Horvath, Z.E.; Lohner, T.; Battistig, G.; Zolnai, Z.; Gyulai, J. [Research Inst. for Technical Physics and Materials Science, Budapest (Hungary)

    2001-07-01

    Damage created by implantation of Al{sup +} ions into 4H-SiC is characterized using backscattering spectrometry in combination with channeling. The measurability of the damage profile in the carbon sublattice was demonstrated using the 4260 keV {sup 12}C({alpha},{alpha}){sup 12}C resonance. To create disorder, Al{sup +} ions with energy of 200 keV and 350 keV were implanted at room temperature. As an independent method, cross-sectional transmission electron microscopy was used to study the damage structure in irradiated 4H-SiC. (orig.)

  10. Recovery of indium-tin-oxide/silicon heterojunction solar cells by thermal annealing

    OpenAIRE

    Morales Vilches, Ana Belén; Voz Sánchez, Cristóbal; Colina Brito, Mónica Alejandra; López Rodríguez, Gema; Martín García, Isidro; Ortega Villasclaras, Pablo Rafael; Orpella García, Alberto; Alcubilla González, Ramón

    2014-01-01

    The emitter of silicon heterojunction solar cells consists of very thin hydrogenated amorphous silicon layers deposited at low temperature. The high sheet resistance of this type of emitter requires a transparent conductive oxide layer, which also acts as an effective antireflection coating. The deposition of this front electrode, typically by Sputtering, involves a relatively high energy ion bombardment at the surface that could degrade the emitter quality. The work function of the tra...

  11. Secondary electron emission from 0.5--2.5-MeV protons and deuterons

    International Nuclear Information System (INIS)

    Thornton, T.A.; Anno, J.N.

    1977-01-01

    Measurement of the secondary electron currents leaving Al, V, Fe, 316 stainless steel, Nb, and Mo foils undergoing 0.5--2.5-MeV proton and deuteron bombardment were made to determine the secondary electron emission ratios for these ions. The measured secondary electron yields were of the order of 1.0, with the deuterons producing generally higher yields than the protons

  12. Multi-element analysis of the rat hippocampus by proton induced x-ray emission spectroscopy (phosphorus, sulfur, chlorine, potassium, calcium, iron, zinc, copper, lead, bromine, and rubidium)

    Energy Technology Data Exchange (ETDEWEB)

    Kemp, K.; Danscher, G.

    1979-01-22

    A technique for multi-element analysis of brain tissue by proton induced x-ray emission spectroscopy (PIXE) is described and data from analysis of fixed and unfixed samples from rat hippocampus, neocortex, amygdala, and spinal cord are presented and commented on. The atoms present in the tissue are bombarded with protons which cause the ejection of electrons from the inner shells. When the holes are refilled with electrons from outer shells, x-ray quanta characteristic for each element are emitted. Using a high resolution energy dispersive detector, a complete x-ray spectrum of the specimen can be recorded in a single measurement. Detection limits less than or approximately 5 ppM of dry matter are obtained for most elements with atomic number greater than 14 (silicon). Around 13 elements were found in concentrations above the detection limits. The grand means for non-fixed hippocampi were e.g., for Zn-120 ppM; Rb-20 ppM; Fe-150 ppM; Pb-3 ppM; Ni-5 ppM.

  13. A NEW RELATIVE PROTON POLARIMETER FOR RHIC

    International Nuclear Information System (INIS)

    HUANG, H.; ALEKSEEV, I.; BUNCE, G.; BRUNER, N.; DESHPANDE, A.; GOTO, Y.; FIELDS, D.; IMAI, K.

    2001-01-01

    An innovative polarimeter based on proton carbon elastic scattering in the Coulomb Nuclear Interference (CNI) region has been installed and commissioned in the Blue ring of RHIC during the first RHIC polarized proton commissioning in September, 2000. The polarimeter consists of ultra-thin carbon targets and four silicon detectors. All elements are in a 1.6 meter vacuum chamber. This paper summarizes the polarimeter design issues and recent commissioning results

  14. COMMISSIONING CNI PROTON POLARIMETERS IN RHIC

    International Nuclear Information System (INIS)

    HUANG, H.; BRAVAR, A.; LI, Z.; MACKAY, W.W.; MAKDISI, Y.; RESCIA, S.; ROSER, T.; SURROW, B.; BUNCE, G.; DESHPANDE, A.; GOTO, Y.; ET AL

    2002-01-01

    Two polarimeters based on proton carbon elastic scattering in the Coulomb Nuclear Interference (CNI) region have been installed and commissioned in the Blue and Yellow rings of RHIC during the first RHIC polarized proton collider run. Each polarimeter consists of ultra-thin carbon targets and six silicon detectors. With newly developed wave form digitizers, they provide fast and reliable polarization information for both rings

  15. Surface temperature measurements for ion-bombarded Si and GaAs at 1.0 to 2.0 MeV

    International Nuclear Information System (INIS)

    Lowe, L.F.; Kennedy, J.K.; Davies, D.E.; Deane, M.L.; Eyges, L.J.

    1975-01-01

    Surface temperatures of ion-bombarded silicon and gallium arsenide have been measured using an infrared detector. Ion beams of N + , N + 2 , O + , O + 2 , C + , CO + , and H + were used at energies from 1--2.0 MeV and at current densities up to 12 μAcenter-dotcm/sup -2/. No temperature dependence was found on ion species, energy, or current. The change in temperature depended only on beam power, target material, and sample mounting technique. With proper mounting temperature increases of 20 degreeC for silicon and 65 degreeC for gallium arsenide were observed for a beam power density of 1.0 Wcenter-dotcm/sup -2/

  16. Computer simulation of proton channelling in silicon

    Indian Academy of Sciences (India)

    2000-06-12

    Jun 12, 2000 ... potential and field due to thermal vibration are appreciable only for distances less than ... bining the advantages of both by considering the interaction with the nearest atom using ..... Solid line is drawn to aid the eye. 4. Results ...

  17. Signal development in irradiated silicon detectors

    CERN Document Server

    Kramberger, Gregor; Mikuz, Marko

    2001-01-01

    This work provides a detailed study of signal formation in silicon detectors, with the emphasis on detectors with high concentration of irradiation induced defects in the lattice. These defects give rise to deep energy levels in the band gap. As a consequence, the current induced by charge motion in silicon detectors is signifcantly altered. Within the framework of the study a new experimental method, Charge correction method, based on transient current technique (TCT) was proposed for determination of effective electron and hole trapping times in irradiated silicon detectors. Effective carrier trapping times were determined in numerous silicon pad detectors irradiated with neutrons, pions and protons. Studied detectors were fabricated on oxygenated and non-oxygenated silicon wafers with different bulk resistivities. Measured effective carrier trapping times were found to be inversely proportional to fuence and increase with temperature. No dependence on silicon resistivity and oxygen concentration was observ...

  18. Strain of laser annealed silicon surfaces

    Science.gov (United States)

    Nemanich, R. J.; Haneman, D.

    1982-05-01

    High resolution Raman scattering measurements have been carried out on pulse and continuous-wave laser annealed silicon samples with various surface preparations. These included polished and ion-bombarded wafers, and saw-cut crystals. The pulse annealing treatments were carried out in ultrahigh vacuum and in air. The residual strain was inferred from the frequency shift of the first-order Raman active mode of Si, and was detectable in the range 10-2-10-3 in all except the polished samples.

  19. Electron and ion beam degradation effects in AES analysis of silicon nitride thin films

    International Nuclear Information System (INIS)

    Fransen, F.; Vanden Berghe, R.; Vlaeminck, R.; Hinoul, M.; Remmerie, J.; Maes, H.E.

    1985-01-01

    Silicon nitride films are currently investigated by AES combined with ion profiling techniques for their stoichiometry and oxygen content. During this analysis, ion beam and primary electron effects were observed. The effect of argon ion bombardment is the preferential sputtering of nitrogen, forming 'covalent' silicon at the surface layer (AES peak at 91 eV). The electron beam irradiation results in a decrease of the covalent silicon peak, either by an electron beam annealing effect in the bulk of the silicon nitride film, or by an ionization enhanced surface diffusion process of the silicon (electromigration). By the electron beam annealing, nitrogen species are liberated in the bulk of the silicon nitride film and migrate towards the surface where they react with the covalent silicon. The ionization enhanced diffusion originates from local charging of the surface, induced by the electron beam. (author)

  20. Flexible, durable proton energy degraders for the GE PETtrace

    DEFF Research Database (Denmark)

    Engle, J. W.; Gagnon, K.; Severin, Gregory

    2012-01-01

    In order to limit the formation of radioisotopic impurities during proton bombardments of solid targets, two methods of introducing degrader foils into the beam upstream of the target were tested. The first design uses a 445 μm thick fixed degrader machined from a single piece of aluminum....... The second design permits introduction of foils made of any material and was tested with foils as thick as 635 μm (also aluminium). In both cases, the foils are cooled with by water flowing through an annular channel outside the radius of the beam. Both designs proved durable and tolerated proton beam...

  1. Flexible, durable proton energy degraders for the GE PETtrace

    Energy Technology Data Exchange (ETDEWEB)

    Engle, J. W.; Gagnon, K.; Severin, G. W.; Valdovinos, H. F.; Nickles, R. J.; Barnhart, T. E. [Chemistry Division - Isotopes, Inorganics and Actinides, Los Alamos National Laboratory, Los Alamos, NM (United States); Department of Radiation Oncology, University of Washington, Seattle, WA (United States); Hevesy Laboratory, Danish Technical University, Risoe (Denmark); Department of Medical Physics, University of Wisconsin, WI, Madison (United States)

    2012-12-19

    In order to limit the formation of radioisotopic impurities during proton bombardments of solid targets, two methods of introducing degrader foils into the beam upstream of the target were tested. The first design uses a 445 {mu}m thick fixed degrader machined from a single piece of aluminum. The second design permits introduction of foils made of any material and was tested with foils as thick as 635 {mu}m (also aluminium). In both cases, the foils are cooled with by water flowing through an annular channel outside the radius of the beam. Both designs proved durable and tolerated proton beam currents in excess of 80 {mu}A.

  2. Evidence Supporting an Early as Well as Late Heavy Bombardment on the Moon

    Science.gov (United States)

    Frey, Herbert

    2015-01-01

    Evidence supporting an intense early bombardment on the Moon in addition to the traditional Late Heavy Bombardment at approx. 4 BY ago include the distribution of N(50) Crater Retention Ages (CRAs) for candidate basins, a variety of absolute age scenarios for both a "young" and an "old" Nectaris age, and the decreasing contrasts in both topographic relief and Bouguer gravity with increasing CRA.

  3. Ion bombardment effects on surface states in selected oxide systems: rutile and alkaline earth titanates

    International Nuclear Information System (INIS)

    Gruen, D.M.

    1978-01-01

    In this paper, the nature of the surface states of n-type TiO 2 and SrTiO 3 is discussed and the role of ion bombardment in modifying the properties of these states is elucidated. Insofar as possible, the interrelationships between oxide nonstoichiometry, surface states, ion bombardment effects and photoelectrolysis are explored

  4. A Unique Photon Bombardment System for Space Applications

    Science.gov (United States)

    Klein, E. J.

    1993-01-01

    The innovative Electromagnetic Radiation Collection and Concentration System (EMRCCS) described is the foundation for the development of a multiplicity of space and terrestrial system formats. The system capability allows its use in the visual, infrared, and ultraviolet ranges of the spectrum for EM collection, concentration, source/receptor tracking, and targeting. The nonimaging modular optical system uses a physically static position aperture for EM radiation collection. Folded optics provide the concentration of the radiation and source autotracking. The collected and concentrated electromagnetic radiation is utilized in many applications, e.g., solar spectrum in thermal and associative photon bombardment applications for hazardous waste management, water purification, metal hardening, hydrogen generation, photovoltaics, etc., in both space and terrestrial segment utilization. Additionally, at the high end of the concentration capability range, i.e., 60,000+, a solar-pulsed laser system is possible.

  5. Measurements of the ballistic-phonon component resulting from nuclear and electron recoils in crystalline silicon

    International Nuclear Information System (INIS)

    Lee, A.T.; Cabrera, B.; Dougherty, B.L.; Penn, M.J.; Pronko, J.G.; Tamura, S.

    1996-01-01

    We present measurements of the ballistic-phonon component resulting from nuclear and electron recoils in silicon at ∼380 mK. The detectors used for these experiments consist of a 300-μm-thick monocrystal of silicon instrumented with superconducting titanium transition-edge sensors. These sensors detect the initial wavefront of athermal phonons and give a pulse height that is sensitive to changes in surface-energy density resulting from the focusing of ballistic phonons. Nuclear recoils were generated by neutron bombardment of the detector. A Van de Graaff proton accelerator and a thick 7 Li target were used. Pulse-height spectra were compared for neutron, x-ray, and γ-ray events. A previous analysis of this data set found evidence for an increase in the ballistic-phonon component for nuclear recoils compared to electron recoils at a 95% confidence level. An improved understanding of the detector response has led to a change in the result. In the present analysis, the data are consistent with no increase at the 68% confidence level. This change stems from an increase in the uncertainty of the result rather than a significant change in the central value. The increase in ballistic phonon energy for nuclear recoils compared to electron recoils as a fraction of the total phonon energy (for equal total phonon energy events) was found to be 0.024 +0.041 -0.055 (68% confidence level). This result sets a limit of 11.6% (95% confidence level) on the ballistic phonon enhancement for nuclear recoils predicted by open-quote open-quote hot spot close-quote close-quote and electron-hole droplet models, which is the most stringent to date. To measure the ballistic-phonon component resulting from electron recoils, the pulse height as a function of event depth was compared to that of phonon simulations. (Abstract Truncated)

  6. Proton Beam Writing

    International Nuclear Information System (INIS)

    Rajta, I.; Szilasi, S.Z.; Csige, I.; Baradacs, E.

    2005-01-01

    Complete text of publication follows. Refractive index depth profile in PMMA due to proton irradiation Proton Beam Writing has been successfully used to create buried channel waveguides in PMMA, which suggested that proton irradiation increases the refractive index. To investigate this effect, PMMA samples were irradiated by 1.7-2.1 MeV proton beam. Spectroscopic Ellipsometry has been used to investigate the depth profile of the refractive index. An increase of the refractive index was observed in the order of 0.01, which is approximately one order of magnitude higher than the detection limit. The highest increase of the refractive index occurs at the end of range, i.e. we found a good correlation with the Bragg curve of the energy loss. Hardness changes in PMMA due to proton beam micromachining As protons penetrate a target material and lose their energy according to the Bragg curve, the energy loss is different at different depths. This causes depth-dependent changes of some physical properties in the target material (e.g. refractive index, hardness). In order to characterize the changes of hardness and other mechanical properties as a function of beam penetration depth, systematic investigations have been performed on PMMA, the most common resist material used in proton beam micromachining. Silicon check valve made by proton beam micromachining The possible application of Proton Beam Micromachining (PBM) has been demonstrated by a few authors for creating 3D Si microstructures. In this work we present alternative methods for the formation of a simple a non-return valve for microfluidic applications. Two different approaches have been applied, in both cases we exploited characteristic features of the PBM technique and the selective formation and dissolution of porous Si over the implantation damaged areas. In the first case we implanted 10 μm thick cantilever-type membrane of the valve normally to the crystal surface and at 30-60 degrees to the sidewalls of the

  7. Cluster-surface collisions: Characteristics of Xe55- and C20 - Si[111] surface bombardment

    International Nuclear Information System (INIS)

    Cheng, H.

    1999-01-01

    Molecular dynamics (MD) simulations are performed to study the cluster-surface collision processes. Two types of clusters, Xe 55 and C 20 are used as case studies of materials with very different properties. In studies of Xe 55 - Si[111] surface bombardment, two initial velocities, 5.0 and 10.0 km/s (normal to the surface) are chosen to investigate the dynamical consequences of the initial energy or velocity in the cluster-surface impact. A transition in the speed of kinetic energy propagation, from subsonic velocities to supersonic velocities, is observed. Energy transfer, from cluster translational motion to the substrate, occurs at an extremely fast rate that increases as the incident velocity increases. Local melting and amorphous layer formation in the surfaces are found via energetic analysis of individual silicon atoms. For C 20 , the initial velocity ranges from 10 to 100 km/s. The clusters are damaged immediately upon impact. Similar to Xe 55 , increase in the potential energy is larger than the increase in internal kinetic energy. However, the patterns of energy distribution are different for the two types of clusters. The energy transfer from the carbon clusters to Si(111) surface is found to be slower than that found in the Xe clusters. Fragmentation of the carbon cluster occurs when the initial velocity is greater than 30 km/s. At 10 km/s, the clusters show recrystallization at later times. The average penetration depth displays a nonlinear dependence on the initial velocity. Disturbance in the surface caused by C 20 is discussed and compared to the damage caused by Xe 55 . Energetics, structures, and dynamics of these systems are fully analyzed and characterized. copyright 1999 American Institute of Physics

  8. ATLAS Silicon Microstrip Tracker

    CERN Document Server

    Haefner, Petra; The ATLAS collaboration

    2010-01-01

    The SemiConductor Tracker (SCT), made up from silicon micro-strip detectors is the key precision tracking device in ATLAS, one of the experiments at CERN LHC. The completed SCT is in very good shape: 99.3% of the SCT strips are operational, noise occupancy and hit efficiency exceed the design specifications. In the talk the current status of the SCT will be reviewed. We will report on the operation of the detector and observed problems, with stress on the sensor and electronics performance. TWEPP Summary In December 2009 the ATLAS experiment at the CERN Large Hadron Collider (LHC) recorded the first proton- proton collisions at a centre-of-mass energy of 900 GeV and this was followed by the unprecedented energy of 7 TeV in March 2010. The SemiConductor Tracker (SCT) is the key precision tracking device in ATLAS, made up from silicon micro-strip detectors processed in the planar p-in-n technology. The signal from the strips is processed in the front-end ASICS ABCD3TA, working in the binary readout mode. Data i...

  9. Proton tagging with the one arm AFP detector

    CERN Document Server

    The ATLAS collaboration

    2017-01-01

    The ATLAS Forward Proton (AFP) detector is designed to identify events in which one or two protons emerge intact from the LHC collisions at small angles. Such processes are usually associated with diffractive scattering. The first arm of the detector, consisting of tracking planes of 3D silicon sensors, was installed in February 2016. This note presents detector level distributions of events with a tagged proton with the AFP tracker and jets in the central detector in the final state.

  10. Proton spectra from 800 MeV protons on selected nuclei. Progress report, January 1, 1979-December 31, 1979

    International Nuclear Information System (INIS)

    Stearns, R.L.

    1979-09-01

    The emission of protons from targets of 6 Li, Li, 12 C, 27 Al, 40 Ca, 51 V, 90 Zr, and Pb under bombardment from 800 MeV protons was studied using the high resolution proton spectrometer at the Los Alamos Meson Physics Facility. Laboratory scattering angles of 5, 7, 9, 11, 13, 15, 20, 25, and 30 0 were measured, with special emphasis on the quasi-free region. Outgoing momenta corresponding to the region of pion production were examined at 11 and 15 0 . Absolute cross sections derived by reference to known (p,p) scattering data at 800 MeV. The quasi-free scattering has been fit with a DWIA analysis by summing over the unobserved (struck) nucleon. The systematics of proton production and the applicability of the DWIA analyses are discussed. 26 references

  11. Proton drip-line studies at HRIBF

    International Nuclear Information System (INIS)

    Rykaczewski, K.P.; Batchelder, J.C.; Bingham, C.R.; Bryan, R.E.; Davinson, T.; Woods, P.J.; Ginter, T.N.; Hamilton, J. H.; Gross, C.J.; Grzywacz, R.; Janas, Z.; Karny, M.; MacDonald, B.D.; McConnell, J.W.; Toth, K.S.; Piechaczek, A.; Zganjar, E.F.; Szerypo, J.; Walters, W. B.

    2000-01-01

    Proton radioactivity studies performed at the Holifield Radioactive Ion Beam Facility (HFBR) within the last few years are reviewed. The discovery of five new proton radioactivities 140 Ho, 141m Ho, 145 Tm, 150m Lu and 151m Lu is presented together with a recent observation of fine structure in proton emission from 146gs,m Tm. These proton emitters were produced by means of fusion-evaporation reactions and studied with the HFBR Recoil Mass Separator and detection system based on a Double-sided Silicon Strip Detector. For 113 Cs and 151 Lu, the studies of level structure were extended beyond the proton-emitting states via the measurements with a clover array Clarion using Recoil Decay Tagging

  12. Efficient and rapid C. elegans transgenesis by bombardment and hygromycin B selection.

    Directory of Open Access Journals (Sweden)

    Inja Radman

    Full Text Available We report a simple, cost-effective, scalable and efficient method for creating transgenic Caenorhabditis elegans that requires minimal hands-on time. The method combines biolistic bombardment with selection for transgenics that bear a hygromycin B resistance gene on agar plates supplemented with hygromycin B, taking advantage of our observation that hygromycin B is sufficient to kill wild-type C. elegans at very low concentrations. Crucially, the method provides substantial improvements in the success of bombardments for isolating transmitting strains, the isolation of multiple independent strains, and the isolation of integrated strains: 100% of bombardments in a large data set yielded transgenics; 10 or more independent strains were isolated from 84% of bombardments, and up to 28 independent strains were isolated from a single bombardment; 82% of bombardments yielded stably transmitting integrated lines with most yielding multiple integrated lines. We anticipate that the selection will be widely adopted for C. elegans transgenesis via bombardment, and that hygromycin B resistance will be adopted as a marker in other approaches for manipulating, introducing or deleting DNA in C. elegans.

  13. Direct and Recoil-Induced Electron Emission from Ion-Bombarded Solids

    DEFF Research Database (Denmark)

    Holmen, G.; Svensson, B.; Schou, Jørgen

    1979-01-01

    The kinetic emission of secondary electrons from ion-bombarded solid surfaces is split into two contributions, a direct one caused by ionizing collisions between the bombarding ion and target atoms, and an indirect one originating from ionizing collisions undergone by recoil atoms with other target...... atoms. The direct contribution, which has been treated by several authors in previous studies, shows a behavior that is determined primarily by the electronic stopping power of the bombarding ion, while the indirect contribution is nonproportionally related to the nuclear stopping power. This latter...

  14. Topography of InP surface bombarded by O2+ ion beam

    International Nuclear Information System (INIS)

    Sun Zhaoqi

    1997-01-01

    The topography of InP surface bombarded by O 2 + ion beam was investigated. Rippled topographies were observed for bombarded samples, and the data show that the ripple formation starts from a sputtering depth of about 0.4 μm. The wavelength and the disorder of the ripples both increase as the sputtering depth increases. The wavelength of the ripples appears to be sputtering depth dependent rather than sputtering rate dependent. It is confirmed that the ion-beam-induced surface rippling can be effectively suppressed by sample rotation during bombardment

  15. Effect of the ion bombardment on the apparent barrier height in GaAs Schottky junctions

    International Nuclear Information System (INIS)

    Horvath, Zs. J.

    1994-01-01

    The bombardment of the semiconductor with different particles often results in the change of the doping concentration at the semiconductor surface. In this paper the effects of this near-interface concentration change on the apparent and real Schottky barrier heights are discussed. Experimental results obtained in GaAs Schottky junctions prepared on ion-bombarded semiconductor surfaces are analysed, and it is shown that their electrical characteristics are strongly influenced by the near-interface concentration change due to the ion bombardment. (author). 36 refs., 2 figs

  16. Preliminary report into the effects of nitrogen ion bombardment treatment on mustard seeds

    International Nuclear Information System (INIS)

    Smith, C.W.; Al-Hashmi, S.A.R.; Ahmed, N.A.G.; Pollard, M.

    1988-01-01

    Mustard seeds have been subjected to nitrogen ion bombardment. A range of conditions was found within which there was an enhancement in the growth of seedlings from the ion bombardment treated seeds relative to those grown from control seeds. Scanning electron microscopy was used to examine seeds after treatment. It appeared that there had been an etching of the seed coating by the ion bombardment. This view was supported by experiments which showed that the rate of capillary water uptake by the treated seeds had been enhanced. (author)

  17. Activation of boron and phosphorus atoms implanted in polycrystalline silicon films at low temperatures

    International Nuclear Information System (INIS)

    Andoh, Nobuyuki; Sameshima, Toshiyuki; Andoh, Yasunori

    2005-01-01

    Phosphorus atoms implanted in laser crystallized polycrystalline silicon films were activated by a heat treatment in air at 260 deg. C for 1, 3 and 24 h. Analysis of ultraviolet reflectivity of phosphorus-doped silicon films implanted by ion doping method at 4 keV revealed that the thickness of the top disordered layer formed by ion bombardment was 6 nm. It is reduced to 4 nm by a 3 h heat treatment at 260 deg. C by recrystallization of disordered region. The electrical conductance of silicon films implanted increased to 1.7x10 5 S/sq after 3 h heat treatment

  18. Proton decay theory

    International Nuclear Information System (INIS)

    Marciano, W.J.

    1983-01-01

    Topics include minimal SU(5) predictions, gauge boson mediated proton decay, uncertainties in tau/sub p/, Higgs scalar effects, proton decay via Higgs scalars, supersymmetric SU(5), dimension 5 operators and proton decay, and Higgs scalars and proton decay

  19. Actinide production from xenon bombardments of curium-248

    International Nuclear Information System (INIS)

    Welch, R.B.

    1985-01-01

    Production cross sections for many actinide nuclides formed in the reaction of 129 Xe and 132 Xe with 248 Cm at bombarding energies slightly above the coulomb barrier were determined using radiochemical techniques to isolate these products. These results are compared with cross sections from a 136 Xe + 248 Cm reaction at a similar energy. When compared to the reaction with 136 Xe, the maxima in the production cross section distributions from the more neutron deficient projectiles are shifted to smaller mass numbers, and the total cross section increases for the production of elements with atomic numbers greater than that of the target, and decreases for lighter elements. These results can be explained by use of a potential energy surface (PES) which illustrates the effect of the available energy on the transfer of nucleons and describes the evolution of the di-nuclear complex, an essential feature of deep-inelastic reactions (DIR), during the interaction. The other principal reaction mechanism is the quasi-elastic transfer (QE). Analysis of data from a similar set of reactions, 129 Xe, 132 Xe, and 136 Xe with 197 Au, aids in explaining the features of the Xe + Cm product distributions, which are additionally affected by the depletion of actinide product yields due to deexcitation by fission. The PES is shown to be a useful tool to predict the general features of product distributions from heavy ion reactions

  20. A molecular dynamics study of energetic particle bombardment on diamond

    International Nuclear Information System (INIS)

    Li Rongbin; Dai Yongbing; Hu Xiaojun; Shen Hesheng; He Xianchang

    2003-01-01

    Molecular dynamic simulations, utilizing the Tersoff many-body potential, are used to investigate the microscopic processes of a single boron atom with an energy of 500 eV implanted into the diamond (001) 2 x 1 reconstructed surface. By calculating the variation of the mean coordination number with time, the lifetime of a thermal spike created by B bombardment is about 0.18 ps. Formation of the split-interstitial composed of projectile and lattice atom (B-C) is observed. The total potential energy of the system decreases about 0.56 eV with a stable B split-interstitial existing in diamond. Lattice relaxations in the diamond (001) 2 x 1 reconstructed surface or near surface of the simulated have been discussed, and the results show that the outermost layer atoms tend to move inward and other atoms move outward, while the interplanar distance between the outermost layer and the second layer has been shortened by 15%, compared with its starting interplanar distance. Stress distribution in the calculated diamond configuration is inhomogeneous. After boron implanted into diamond with an energy of 500 eV, there is an excess of compressively stressed atoms in the lattice, which induces the total stress being compressive

  1. Sputtering and reflection of self-bombardment of tungsten material

    Energy Technology Data Exchange (ETDEWEB)

    Niu, Guo-jian [University of Science and Technology of China, Hefei (China); Institute of Plasma Physics Chinese Academy of Sciences, Hefei (China); Li, Xiao-chun; Xu, Qian; Yang, Zhong-shi [Institute of Plasma Physics Chinese Academy of Sciences, Hefei (China); Luo, Guang-nan, E-mail: gnluo@ipp.ac.cn [University of Science and Technology of China, Hefei (China); Institute of Plasma Physics Chinese Academy of Sciences, Hefei (China); Hefei Center for Physical Science and Technology, Hefei (China); Hefei Science Center of CAS, Hefei (China)

    2015-04-15

    In present research, the sputtering and reflection yield of self-bombardment of tungsten are investigated with the aid of molecular dynamics simulations. The source of sputtered and reflected atoms is detected by traced the original locations of sputtered and reflected atoms. Results show that for the reflected atoms no specific region exists which means cluster atoms are randomly reflected. But almost all of sputtered atoms are from a conical region under the landing point of cluster. So we can determine the sputtering yield by study the dimension of the sputtering region. Molecular dynamics shows the depth and radius of the conical are power functions of impacting energy. The effects of cluster size and temperature of target on sputtering and reflection rate are also preformed in present study. Both sputtering and reflection yield are proportion to cluster size in present cluster size, i.e. 66–2647 atoms. Higher target temperature can increase sputtering yield and deduce sputtering threshold energy, but little effect on reflection rate.

  2. Auger emission from solid surfaces bombarded with ions

    International Nuclear Information System (INIS)

    Grizzi, Oscar.

    1986-01-01

    The Auger electron emission from Be, Na, Mg, Al and Si bombarded with 0,5-20 KeV noble gas ions is studied. Sharp structures of the Auger electron spectra of Na and Be were identified. A Monte Carlo program was adapted to simulate the colision cascade in the solid, inner shell excitations and Auger decays. From the comparision of experimental and simulated Auger intensities, the relative role of symmetric and asymmetric collisions in Be K- and Al L-shell excitation were evaluated. In the case of Be, the discussion of the exciting processes to higher projectile energies was extended. To this end, the simulation to early measurements of Be K X-ray yields was applied. From this analysis, information about the variations of the fluorescence yield and outer-shell occupation numbers of Be with projectile energy was obtained. The study of the shape of the sharp Auger structures and their dependence with the energy and incidence projectile angle gives information about the collisional processes, inner hole lifetimes and Auger decays. From the evaluation of the energy and angular distribution of the excited sputtered atoms and the interaction between them and the metallic-surface, the energy shift distributions in the Auger energies were obtained. From the comparison of these distributions with the experimental atomic peaks, the main causes of the broadening of these peaks were determined. (M.E.L.) [es

  3. Modelling and simulation of surface morphology driven by ion bombardment

    Energy Technology Data Exchange (ETDEWEB)

    Yewande, E.O.

    2006-05-02

    Non-equilibrium surfaces, at nanometer length scales, externally driven via bombardment with energetic particles are known to exhibit well ordered patterns with a variety of applications in nano-technology. These patterns emerge at time scales on the order of minutes. Continuum theory has been quite successful in giving a general picture of the processes that interplay to give the observed patterns, as well as how such competition might determine the properties of the nanostructures. However, continuum theoretical descriptions are ideal only in the asymptotic limit. The only other theoretical alternative, which happens to be more suitable for the characteristic length-and time-scales of pattern formation, is Monte Carlo simulation. In this thesis, surface morphology is studied using discrete solid-on-solid Monte Carlo models of sputtering and surface diffusion. The simulations are performed in the context of the continuum theories and experiments. In agreement with the experiments, the ripples coarsen with time and the ripple velocity exhibits a power-law behaviour with the ripple wavelength, in addition, the exponent was found to depend on the simulation temperature, which suggests future experimental studies of flux dependence. Moreover, a detailed exploration of possible topographies, for different sputtering conditions, corresponding to different materials, was performed. And different surface topographies e.g. holes, ripples, and dots, were found at oblique incidence, without sample rotation. With sample rotation no new topography was found, its only role being to destroy any inherent anisotropy in the system. (orig.)

  4. Sputtering and reflection of self-bombardment of tungsten material

    International Nuclear Information System (INIS)

    Niu, Guo-jian; Li, Xiao-chun; Xu, Qian; Yang, Zhong-shi; Luo, Guang-nan

    2015-01-01

    In present research, the sputtering and reflection yield of self-bombardment of tungsten are investigated with the aid of molecular dynamics simulations. The source of sputtered and reflected atoms is detected by traced the original locations of sputtered and reflected atoms. Results show that for the reflected atoms no specific region exists which means cluster atoms are randomly reflected. But almost all of sputtered atoms are from a conical region under the landing point of cluster. So we can determine the sputtering yield by study the dimension of the sputtering region. Molecular dynamics shows the depth and radius of the conical are power functions of impacting energy. The effects of cluster size and temperature of target on sputtering and reflection rate are also preformed in present study. Both sputtering and reflection yield are proportion to cluster size in present cluster size, i.e. 66–2647 atoms. Higher target temperature can increase sputtering yield and deduce sputtering threshold energy, but little effect on reflection rate

  5. Production of nuclear fragments from the interactions of 24 GeV/c protons in a gold target

    CERN Document Server

    Herz, A J; O'Sullivan, D; Thompson, A

    1976-01-01

    Lexan polycarbonate track detectors have been used to determine the charge and energy spectra of nuclear fragments with Z>or=6 and with kinetic energies as low as approximately=1.0 MeV/nucleon emitted from a thin gold target bombarded with 24 GeV/c protons. (8 refs).

  6. Substrate bias effect on crystallinity of polycrystalline silicon thin films prepared by pulsed ion-beam evaporation method

    Energy Technology Data Exchange (ETDEWEB)

    Ali, Fazlat; Gunji, Michiharu; Yang, Sung-Chae; Suzuki, Tsuneo; Suematsu, Hisayuki; Jiang, Weihua; Yatsui, Kiyoshi [Nagaoka Univ. of Technology, Extreme Energy-Density Research Inst., Nagaoka, Niigata (Japan)

    2002-06-01

    The deposition of polycrystalline silicon thin films has been tried by a pulsed ion-beam evaporation method, where high crystallinity and deposition rate have been achieved without heating the substrate. The crystallinity and the deposition rate were improved by applying bias voltage to the substrate, where instantaneous substrate heating might have occurred by ion-bombardment. (author)

  7. Substrate bias effect on crystallinity of polycrystalline silicon thin films prepared by pulsed ion-beam evaporation method

    International Nuclear Information System (INIS)

    Ali, Fazlat; Gunji, Michiharu; Yang, Sung-Chae; Suzuki, Tsuneo; Suematsu, Hisayuki; Jiang, Weihua; Yatsui, Kiyoshi

    2002-01-01

    The deposition of polycrystalline silicon thin films has been tried by a pulsed ion-beam evaporation method, where high crystallinity and deposition rate have been achieved without heating the substrate. The crystallinity and the deposition rate were improved by applying bias voltage to the substrate, where instantaneous substrate heating might have occurred by ion-bombardment. (author)

  8. Proton therapy

    International Nuclear Information System (INIS)

    Jongen, Y.

    1995-01-01

    Ideal radiotherapy deposits a large amount of energy in the tumour volume, and none in the surrounding healthy tissues. Proton therapy comes closer to this goal because of a greater concentration of dose, well defined proton ranges and points of energy release which are precisely known - the Bragg peak1. In the past, the development of clinical proton therapy has been hampered by complexity, size, and cost. To be clinically effective, energies of several hundred MeV are required; these were previously unavailable for hospital installations, and pioneering institutions had to work with complex, inadequate equipment originally intended for nuclear physics research. Recently a number of specialist organizations and commercial companies have been working on dedicated systems for proton therapy. One, IBA of Belgium, has equipment for inhouse hospital operation which encompasses a complete therapy centre, delivered as a turnkey package and incorporating a compact, automated, higher energy cyclotron with isocentric gantries. Their system will be installed at Massachusetts General Hospital, Boston. The proton therapy system comprises: - a 235 MeV isochronous cyclotron to deliver beams of up to 1.5 microamps, but with a hardware limitation to restrict the maximum possible dose; - variable energy beam (235 to 70 MeV ) with energy spread and emittance verification; - a beam transport and switching system to connect the exit of the energy selection system to the entrances of a number of gantries and fixed beamlines. Along the beam transport system, the beam characteristics are monitored with non-interceptive multiwire ionization chambers for automatic tuning; - gantries fitted with nozzles and beamline elements for beam control; both beam scattering and beam wobbling techniques are available for shaping the beam;

  9. Impact of Ion Bombardment on the Structure and Magnetic Properties of Fe78Si13B9 Amorphous Alloy

    Science.gov (United States)

    Wu, Yingwei; Peng, Kun

    2018-06-01

    Amorphous Fe78Si13B9 alloy ribbons were bombarded by ion beams with different incident angles ( θ ). The evolution of the microstructure and magnetic properties of ribbons caused by ion beam bombardment was investigated by x-ray diffraction, transmission electron microscope and vibrating sample magnetometer analysis. Low-incident-angle bombardment led to atomic migration in the short range, and high-incident-angle bombardment resulted in the crystallization of amorphous alloys. Ion bombardment induces magnetic anisotropy and affects magnetic properties. The effective magnetic anisotropy was determined by applying the law of approach to saturation, and it increased with the increase of the ion bombardment angle. The introduction of effective magnetic anisotropy will reduce the permeability and increase the relaxation frequency. Excellent high-frequency magnetic properties can be obtained by selecting suitable ion bombardment parameters.

  10. Ion peening and stress relaxation induced by low-energy atom bombardment of covalent solids

    International Nuclear Information System (INIS)

    Koster, Monika; Urbassek, Herbert M.

    2001-01-01

    Using molecular-dynamics simulation, we study the buildup and relaxation of stress induced by low-energy (≤150 eV) atom bombardment of a target material. The effect is brought out most clearly by using an initially compressed specimen. As target material, we employ Si, based on the Tersoff potential. By varying the bond strength in the potential, we can specifically study its effect on damage production and stress changes. We find that in general, stress is relaxed by the atom bombardment; only for low bombarding energies and strong bonds, atom bombardment increases stress. We rationalize this behavior by considering the role of energized atoms and of recoil-implanted target atoms

  11. The interpretation of ellipsometric measurements of ion bombardment of noble gases on semiconductor surfaces

    NARCIS (Netherlands)

    Holtslag, A.H.M.; Slager, U.C.; van Silfhout, Arend

    1985-01-01

    Low energy noble gas ion bombardment and thermal desorption studies were carried out on Si(111) and analysed, in situ, using spectroscopic ellipsometry. The amorphous layer thickness and implanted noble gas fraction were calculated.

  12. Self-Assembled Gold Nano-Ripple Formation by Gas Cluster Ion Beam Bombardment.

    Science.gov (United States)

    Tilakaratne, Buddhi P; Chen, Quark Y; Chu, Wei-Kan

    2017-09-08

    In this study, we used a 30 keV argon cluster ion beam bombardment to investigate the dynamic processes during nano-ripple formation on gold surfaces. Atomic force microscope analysis shows that the gold surface has maximum roughness at an incident angle of 60° from the surface normal; moreover, at this angle, and for an applied fluence of 3 × 10 16 clusters/cm², the aspect ratio of the nano-ripple pattern is in the range of ~50%. Rutherford backscattering spectrometry analysis reveals a formation of a surface gradient due to prolonged gas cluster ion bombardment, although the surface roughness remains consistent throughout the bombarded surface area. As a result, significant mass redistribution is triggered by gas cluster ion beam bombardment at room temperature. Where mass redistribution is responsible for nano-ripple formation, the surface erosion process refines the formed nano-ripple structures.

  13. Shallow boron dopant on silicon An MD study

    International Nuclear Information System (INIS)

    Perez-Martin, A. Mari Carmen; Jimenez-Rodriguez, Jose J.; Jimenez-Saez, Jose Carlos

    2004-01-01

    Low energy boron bombardment of silicon has been simulated at room temperature by molecular dynamics (MD). Tersoff potential T3 was used in the simulation smoothly linked up with the universal potential. The boron-silicon (B-Si) interaction was simulated according to Tersoff potential for SiC but modified to account for the B-Si interaction. The algorithm can distinguish a B from a Si neighbour. Si-c, with (2 x 1) surface reconstruction, was bombarded with boron at 200 and 500 eV. These energies were initially chosen as good representative values of the low energy range. Reliable results require of a reasonable good statistic so that 1000-impact points were chosen uniformly distributed over a representative area of a 2 x 1 surface. The distribution of mean projected range for B is given. All kinds of point defect were looked for in a Si damaged target after bombardment. Energetically stable substitutional and interstitial configurations are presented and the relative appearances of the different types of interstitials, for both Si and B, are given. It is also determined the mean length of the distance to the first neighbours of defects

  14. Particle-In-Cell/Monte Carlo Simulation of Ion Back Bombardment in Photoinjectors

    International Nuclear Information System (INIS)

    Qiang, Ji; Corlett, John; Staples, John

    2009-01-01

    In this paper, we report on studies of ion back bombardment in high average current dc and rf photoinjectors using a particle-in-cell/Monte Carlo method. Using H 2 ion as an example, we observed that the ion density and energy deposition on the photocathode in rf guns are order of magnitude lower than that in a dc gun. A higher rf frequency helps mitigate the ion back bombardment of the cathode in rf guns

  15. The effects of thermal annealing on iron bombarded InP/InGaAs multilayer structures

    International Nuclear Information System (INIS)

    Subramaniam, S.C.; Rezazadeh, A.A.

    2006-01-01

    The effects of Fe-ion bombardment at 77 K (cold) and room temperature (RT) into single layer InGaAs, InP and multilayer InP/InGaAs HBT structures have been investigated. Annealing characteristics and RF dissipation loss measurements of Fe-ion bombarded samples at 77 K indicated good electrical isolation in n-, p-type InGaAs materials and InP/InGaAs HBT structures. Thermally stable (up to 250 deg. C) high sheet resistance (R sh ) of ∼5 x 10 6 Ω/sq has been achieved on these samples while higher R sh of ∼10 7 Ω/sq was obtained for the n-InP materials bombarded with similar conditions. Dissipation losses of 1.7 dB/cm at 10 GHz and 2.8 dB/cm at 40 GHz have been measured for the cold Fe-ion bombarded InP-based HBT structures. This result is similar to those obtained for an un-bombarded S.I. InP substrate, indicating good electrical isolation. We have also determined electron trapping levels by thermal annealing for the cold and RT Fe-ion bombarded samples. It is shown that the high resistivity achieved in the cold implanted InGaAs layer is most likely due to the creation of mid-bandgap defect levels (E C - 0.33) eV, which are created only in the cold Fe-ion bombardment. The DC isolation and RF dissipation loss analysis have been used to identify a suitable bombardment scheme for the fabrication of planar InP/InGaAs HBTs

  16. Very low-energy and low-fluence ion beam bombardment of naked plasmid DNA

    International Nuclear Information System (INIS)

    Norarat, R.; Semsang, N.; Anuntalabhochai, S.; Yu, L.D.

    2009-01-01

    Ion beam bombardment of biological organisms has been recently applied to mutation breeding of both agricultural and horticultural plants. In order to explore relevant mechanisms, this study employed low-energy ion beams to bombard naked plasmid DNA. The study aimed at simulation of the final stage of the process of the ion beam bombardment of real cells to check whether and how very low-energy and low-fluence of ions can induce mutation. Argon and nitrogen ions at 5 keV and 2.5 keV respectively bombarded naked plasmid DNA pGFP to very low-fluences, an order of 10 13 ions/cm 2 . Subsequently, DNA states were analyzed using electrophoresis. Results provided evidences that the very low-energy and low-fluence ion bombardment indeed altered the DNA structure from supercoil to short linear fragments through multiple double strand breaks and thus induced mutation, which was confirmed by transfer of the bombarded DNA into bacteria Escherichia coli and subsequent expression of the marker gene.

  17. Influence of the ion bombardment of O{sub 2} plasmas on low-k materials

    Energy Technology Data Exchange (ETDEWEB)

    Verdonck, Patrick, E-mail: verdonck@imec.be [IMEC, Kapeldreef 75, 3001 Leuven (Belgium); Samara, Vladimir [IMEC, Kapeldreef 75, 3001 Leuven (Belgium); Open University, Materials Engineering, Walton Hall, Milton Keynes MK7 6AA (United Kingdom); Goodyear, Alec [Open University, Materials Engineering, Walton Hall, Milton Keynes MK7 6AA (United Kingdom); Ferchichi, Abdelkarim; Van Besien, Els; Baklanov, Mikhail R. [IMEC, Kapeldreef 75, 3001 Leuven (Belgium); Braithwaite, Nicholas [Open University, Department of Physics and Astronomy, Walton Hall, Milton Keynes MK7 6AA (United Kingdom)

    2011-10-31

    In this study, special tests were devised in order to investigate the influence of ion bombardment on the damage induced in low-k dielectrics by oxygen plasmas. By placing a sample that suffered a lot of ion bombardment and one which suffered little ion bombardment simultaneously in the same plasma, it was possible to verify that ion bombardment in fact helped to protect the low-k film against oxygen plasma induced damage. Exhaustive analyses (ellipsometry, X-ray photoelectron spectroscopy, Fourier transform infrared spectroscopy, porosimetry, capacitance-voltage (C-V) measurements, water contact angle analysis) show that ion bombardment induced the formation of a denser top layer in the film, which then hampered further penetration of active oxygen species deeper into the bulk. This was further confirmed by other tests combining capacitively and inductively coupled plasmas. Therefore, it was possible to conclude that, at least for these plasmas, ion bombardment may help to reduce plasma induced damage to low-k materials.

  18. Back bombardment for dispenser and lanthanum hexaboride cathodes

    Directory of Open Access Journals (Sweden)

    Mahmoud Bakr

    2011-06-01

    Full Text Available The back bombardment (BB effect limits wide usage of thermionic rf guns. The BB effect induces not only ramping-up of a cathode’s temperature and beam current, but also degradation of cavity voltage and beam energy during a macropulse. This paper presents a comparison of the BB effect for the case of dispenser tungsten-base (DC and lanthanum hexaboride (LaB_{6} thermionic rf gun cathodes. For each, particle simulation codes are used to simulate the BB effect and electron beam dynamics in a thermionic rf gun cathode. A semiempirical equation is also used to investigate the stopping range and deposited heat power of BB electrons in the cathode material. A numerical simulation method is used to calculate the change of the cathode temperature and current density during a single macropulse. This is done by solving two differential equations for the rf gun cavity equivalent circuit and one-dimensional thermal diffusion equation. High electron emission and small beam size are required for generation of a high-brightness electron beam, and so in this work the emission properties of the cathode are taken into account. Simulations of the BB effect show that, for a pulse of 6  μs duration, the DC cathode experiences a large change in the temperature compared with LaB_{6}, and a change in current density 6 times higher. Validation of the simulation results is performed using experimental data for beam current beyond the gun exit. The experimental data is well reproduced using the simulation method.

  19. Proton radiography to improve proton therapy treatment

    NARCIS (Netherlands)

    Takatsu, J.; van der Graaf, E. R.; van Goethem, Marc-Jan; van Beuzekom, M.; Klaver, T.; Visser, Jan; Brandenburg, S.; Biegun, A. K.

    The quality of cancer treatment with protons critically depends on an accurate prediction of the proton stopping powers for the tissues traversed by the protons. Today, treatment planning in proton radiotherapy is based on stopping power calculations from densities of X-ray Computed Tomography (CT)

  20. Data acquisition system for a proton imaging apparatus

    CERN Document Server

    Sipala, V; Bruzzi, M; Bucciolini, M; Candiano, G; Capineri, L; Cirrone, G A P; Civinini, C; Cuttone, G; Lo Presti, D; Marrazzo, L; Mazzaglia, E; Menichelli, D; Randazzo, N; Talamonti, C; Tesi, M; Valentini, S

    2009-01-01

    New developments in the proton-therapy field for cancer treatments, leaded Italian physics researchers to realize a proton imaging apparatus consisting of a silicon microstrip tracker to reconstruct the proton trajectories and a calorimeter to measure their residual energy. For clinical requirements, the detectors used and the data acquisition system should be able to sustain about 1 MHz proton rate. The tracker read-out, using an ASICs developed by the collaboration, acquires the signals detector and sends data in parallel to an FPGA. The YAG:Ce calorimeter generates also the global trigger. The data acquisition system and the results obtained in the calibration phase are presented and discussed.

  1. Mercury's Surface Magnetic Field Determined from Proton-Reflection Magnetometry

    Science.gov (United States)

    Winslow, Reka M.; Johnson, Catherine L.; Anderson, Brian J.; Gershman, Daniel J.; Raines, Jim M.; Lillis, Robert J.; Korth, Haje; Slavin, James A.; Solomon, Sean C.; Zurbuchen, Thomas H.; hide

    2014-01-01

    Solar wind protons observed by the MESSENGER spacecraft in orbit about Mercury exhibit signatures of precipitation loss to Mercury's surface. We apply proton-reflection magnetometry to sense Mercury's surface magnetic field intensity in the planet's northern and southern hemispheres. The results are consistent with a dipole field offset to the north and show that the technique may be used to resolve regional-scale fields at the surface. The proton loss cones indicate persistent ion precipitation to the surface in the northern magnetospheric cusp region and in the southern hemisphere at low nightside latitudes. The latter observation implies that most of the surface in Mercury's southern hemisphere is continuously bombarded by plasma, in contrast with the premise that the global magnetic field largely protects the planetary surface from the solar wind.

  2. Silicon Qubits

    Energy Technology Data Exchange (ETDEWEB)

    Ladd, Thaddeus D. [HRL Laboratories, LLC, Malibu, CA (United States); Carroll, Malcolm S. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

    2018-02-28

    Silicon is a promising material candidate for qubits due to the combination of worldwide infrastructure in silicon microelectronics fabrication and the capability to drastically reduce decohering noise channels via chemical purification and isotopic enhancement. However, a variety of challenges in fabrication, control, and measurement leaves unclear the best strategy for fully realizing this material’s future potential. In this article, we survey three basic qubit types: those based on substitutional donors, on metal-oxide-semiconductor (MOS) structures, and on Si/SiGe heterostructures. We also discuss the multiple schema used to define and control Si qubits, which may exploit the manipulation and detection of a single electron charge, the state of a single electron spin, or the collective states of multiple spins. Far from being comprehensive, this article provides a brief orientation to the rapidly evolving field of silicon qubit technology and is intended as an approachable entry point for a researcher new to this field.

  3. Study of proton and 2 protons emission from light neutron deficient nuclei around A=20

    International Nuclear Information System (INIS)

    Zerguerras, T.

    2001-09-01

    Proton and two proton emission from light neutron deficient nuclei around A=20 have been studied. A radioactive beam of 18 Ne, 17 F and 20 Mg, produced at the Grand Accelerateur National d'Ions Lourds by fragmentation of a 24 Mg primary beam at 95 MeV/A, bombarded a 9 Be target to form unbound states. Proton(s) and nuclei from the decay were detected respectively in the MUST array and the SPEG spectrometer. From energy and angle measurements, the invariant mass of the decaying nucleus could be reconstructed. Double coincidence events between a proton and 17 F, 16 O, 15 O, 14 O and 18 Ne were registered to obtain excitation energy spectra of 18 Ne, 17 F, 16 F, 15 F et 19 Na. Generally, the masses measures are in agreement with previous experiments. In the case of 18 Ne, excitation energy and angular distributions agree well with the predictions of a break up model calculation. From 17 Ne proton coincidences, a first experimental measurement of the ground state mass excess of 18 Na has been obtained and yields 24,19(0,15)MeV. Two proton emission from 17 Ne and 18 Ne excited states and the 19 Mg ground state was studied through triple coincidences between two proton and 15 O, 16 O and 17 Ne respectively. In the first case, the proton-proton relative angle distribution in the center of mass has been compared with model calculation. Sequential emission from excited states of 17 Ne, above the proton emission threshold, through 16 F is dominant but a 2 He decay channel could not be excluded. No 2 He emission from the 1.288 MeV 17 Ne state, or from the 6.15 MeV 18 Ne state has been observed. Only one coincidence event between 17 Ne and two proton was registered, the value of the one neutron stripping reaction cross section of 20 Mg being much lower than predicted. (author)

  4. Weld metal resistant to neutron-bombardment embrittlement

    International Nuclear Information System (INIS)

    Biemiller, E.C.

    1980-01-01

    The object of the invention is the provision of a broad range of weldments for reactor pressure vessels that exhibit resistance to neutron-induced changes sufficient to prevent the weldments from being limiting factors in reactor operation. The weld materials of the present invention are defined by as deposited weight percentages in the following ranges: carbon 0.00-0.l5, manganese 1.00 - 2.20, phosphorus 0.000 - 0.015, sulfur 0.00 - 0.02, silicon 0.00 - 0.40, nickel 0.00 - 1.20, chromium 0.00 - 2.50, molybdenum 0.30 - 1.20, copper 0.00 - 0.10, vanadium 0.00 - 0.15, balance essentially iron. A further constraint is that, in its deposited state, A/B <0.4, where A is the sum of the weight percents of nickel and silicon in the metal and B is the sum of the weight percents of manganese, chromium, and molybdenum. (LL)

  5. Wobbling The Galactic Disk with Bombardment of Satellite Galaxies

    Science.gov (United States)

    D'Onghia, Elena

    We propose to assess the effect of impacts of large visible satellite galaxies on a disk, as well as the relevance of the continuing bombardment of the Galactic disk by dark matter clumps as predicted by the current cosmological framework that can wobble the disk, heating it and eventually exciting ragged spiral structures. In particular, we make detailed predictions for observable features such as spiral arms, rings and their associated stars in galactic disks and relate them to the physical processes that drive their formation and evolution in our Milky Way galaxy and nearby spirals. To do this, we will combine analytic methods and numerical simulations that allow us to calculate observables, which we will compare to present and forthcoming observations. Our methodology utilizes a combination of state of the art hydrodynamic simulations of galaxy evolution and multi- wavelength radiative transfer simulations. Our primary goals are: (1) To identify the physical processes that are responsible for spiral structure formation observed in our Milky Way and nearby disk galaxies, from the flocculent to grand- designed spiral galaxies and to provide observable signatures to be compared with data on nearby galaxies combining maps of 24 micron emission (Spitzer) and cold gas, CO (Heracles) and HI (THINGS). (2) To explore different morphologies of spiral galaxies: from the multi-armed galaxies to the Milky Way sized galaxies with few arms. (3) For a Milky Way disk we will assess the effect of impacts of substructures passing through the disk to origin the asymmetry in the number density of stars recently discovered from SDSS and SEGUE data and confirmed from RAVE data. We will also investigate the disk heating in the vertical plane due to the formation of vertical oscillations that are produced by the impact and migration of stars in the disk as consequence of the heating as compared to the classical stellar migration mechanism. (4) We will measure the spiral pattern speed

  6. Si(LMM) Auger electron emission from Si alloys by keV Ar/sup +/ ion bombardment, new effect and application

    Energy Technology Data Exchange (ETDEWEB)

    Hiraki, A; Kim, S; Imura, T; Iwami, M [Osaka Univ., Suita (Japan). Faculty of Engineering

    1979-09-01

    Si(LMM) Auger spectra excited by keV ion bombardment were studied in Si alloyed with several elements (Au, Cu, Pd, Ni, C, and H). The spectra differed completely from those of pure Si. The main characteristics are (1) the spectra are composed of two well-separated peaks (88 and 92 eV) called the atomic-like peak (88 eV) and the bulk-like peak (92 eV); and (2) the atomic-like peak is enhanced with respect to the bulk-like peak, and this enhancement becomes more obvious as the concentration of partner elements of the alloys are increased. The possible application of the present phenomena is proposed as a technique for detecting the homogeneity of Si alloy films in the three-dimensional sense - as an example, the three-dimensional distribution of hydrogen in hydrogenated amorphous silicon (a-Si-H).

  7. Synthesis of a cyclic fibrin-like peptide and its analysis by fast atom bombardment mass spectrometry

    International Nuclear Information System (INIS)

    Young, J.D.; Costello, C.E.; Langenhove, A. van; Haber, E.; Matsueda, G.R.

    1983-01-01

    For immunochemical purposes, a cyclic 12 peptide was synthesized to model the γ-γ-chain cross-link site in human fibrin. The model was based upon the structure proposed by Chen and Doolittle which is characterized by two reciprocating epsilon-(γ-Glu)Lys bonds between adjacent fibrin γ-chains oriented in an antiparallel manner. To achieve the antiparallel orientation of the peptide backbone, Pro and Gly were inserted at positions 6 and 7 of the linear 12-peptide: acetyl-Gly-Glu-Gln-His-His-Pro-Gly-Gly-Gly-Ala-Lys-Gly-amide. The insertions were made to facilitate a reverse turn of the peptide during the last synthetic step, which was formation of the epsilon-(γ-Glu)Lys bond between Glu at position 2 and Lys at position 11 with diphenylphosphorylazide. The resulting cyclic peptide represented half of the symmetrical cross-linked region in clotted fibrin. Following purification by HPLC, both linear and cyclic 12-peptides were analyzed by fast atom bombardment mass spectrometry. Abundant molecular protonated ions were observed for both peptides. In addition, the amino acid sequence of the linear peptide and the location of the epsilon-(γ-Glu)Lys bond in the cyclized peptide could be verified. (author)

  8. Proton diffraction

    International Nuclear Information System (INIS)

    Den Besten, J.L.; Jamieson, D.N.; Allen, L.J.

    1998-01-01

    The Lindhard theory on ion channeling in crystals has been widely accepted throughout ion beam analysis for use in simulating such experiments. The simulations use a Monte Carlo method developed by Barret, which utilises the classical 'billiard ball' theory of ions 'bouncing' between planes or tubes of atoms in the crystal. This theory is not valid for 'thin' crystals where the planes or strings of atoms can no longer be assumed to be of infinite proportions. We propose that a theory similar to that used for high energy electron diffraction can be applied to MeV ions, especially protons, in thin crystals to simulate the intensities of transmission channeling and of RBS spectra. The diffraction theory is based on a Bloch wave solution of the Schroedinger equation for an ion passing through the periodic crystal potential. The widely used universal potential for proton-nucleus scattering is used to construct the crystal potential. Absorption due to thermal diffuse scattering is included. Experimental parameters such as convergence angle, beam tilt and scanning directions are considered in our calculations. Comparison between theory and experiment is encouraging and suggests that further work is justified. (authors)

  9. Effects of ion beam bombardment of carbon thin films deposited onto tungsten carbide and tool steels

    Energy Technology Data Exchange (ETDEWEB)

    Awazu, Kaoru; Yoshida, Hiroyuki [Industrial Research Inst. of Ishikawa (Japan); Watanabe, Hiroshi [Gakushuin Univ., Tokyo (Japan); Iwaki, Masaya; Guzman, L [RIKEN, Saitama (Japan)

    1992-04-15

    A study was made of the effects of argon ion bombardment of carbon thin films deposited onto WC and tool steels. Carbon thin film deposition was performed at various temperatures ranging from 200degC to 350degC, using C{sub 6}H{sub 6} gas. Argon ion beam bombardment of the films was carried out at an energy of 150 keV with a dose of 1x10{sup 16} ions cm{sup -2}. The hardness and adhesion of the films were measured by means of Knoop hardness and scratch tests respectively. The structure of the carbon films was estimated by laser Raman spectroscopy, and the relations were investigated between the mechanical properties and the structure of the films. The hardness of carbon thin films increases as their deposition temperature decreases; this tendency corresponds to the increase in amorphous structure estimated by Raman spectra. Argon ion bombardment results in constant hardness and fraction of amorphous structure. Argon ion beam bombardment of films prior to additional carbon deposition may cause the adhesion of the subsequently deposited films to improve. It is concluded that argon ion beam bombardment is useful for improving the properties of carbon films deposited onto WC and tool steels. (orig.).

  10. Effects of ion beam bombardment of carbon thin films deposited onto tungsten carbide and tool steels

    International Nuclear Information System (INIS)

    Awazu, Kaoru; Yoshida, Hiroyuki; Watanabe, Hiroshi; Iwaki, Masaya; Guzman, L.

    1992-01-01

    A study was made of the effects of argon ion bombardment of carbon thin films deposited onto WC and tool steels. Carbon thin film deposition was performed at various temperatures ranging from 200degC to 350degC, using C 6 H 6 gas. Argon ion beam bombardment of the films was carried out at an energy of 150 keV with a dose of 1x10 16 ions cm -2 . The hardness and adhesion of the films were measured by means of Knoop hardness and scratch tests respectively. The structure of the carbon films was estimated by laser Raman spectroscopy, and the relations were investigated between the mechanical properties and the structure of the films. The hardness of carbon thin films increases as their deposition temperature decreases; this tendency corresponds to the increase in amorphous structure estimated by Raman spectra. Argon ion bombardment results in constant hardness and fraction of amorphous structure. Argon ion beam bombardment of films prior to additional carbon deposition may cause the adhesion of the subsequently deposited films to improve. It is concluded that argon ion beam bombardment is useful for improving the properties of carbon films deposited onto WC and tool steels. (orig.)

  11. Hydrogen pumping and release by graphite under high flux plasma bombardment

    International Nuclear Information System (INIS)

    Hirooka, Y.; Leung, W.K.; Conn, R.W.; Goebel, D.M.; Labombard, B.; Nygren, R.; Wilson, K.L.

    1988-01-01

    Inert gas (helium or argon) plasma bombardment has been found to increase the surface gas adsorptivity of isotropic graphite (POCO-graphite), which can then getter residual gases in a high vacuum system. The inert gas plasma bombardment was carried out at a flux ∼ 1 x 10 18 ions s -1 cm -2 to a fluence of the order of 10 21 ions/cm 2 and at temperatures around 800 degree C. The plasma bombarding energy was varied between 100 and 200 eV. The gettering speed of the activated graphite surface is estimated to be as large as 25 liters s -1 cm -2 at total pressures between 10 -6 and 10 -7 torr. The gettering capacity estimated is 0.025 torr-liter/cm 2 at room temperature. The gettering capability of graphite can be easily recovered by repeating inert gas plasma bombardment. The activated graphite surface exhibits a smooth, sponge-like morphology with significantly increased pore openings, which correlates with the observed increase in the surface gas adsorptivity. The activated graphite surface has been observed to pump hydrogen plasma particles as well. From calibrated H-alpha measurements, the dynamic hydrogen retention capacity is evaluated to be as large as 2 x 10 18 H/cm 2 at temperatures below 100 degree C and at a plasma bombarding energy of 300 eV

  12. Evolution of atomic-scale surface structures during ion bombardment: A fractal simulation

    International Nuclear Information System (INIS)

    Shaheen, M.A.; Ruzic, D.N.

    1993-01-01

    Surfaces of interest in microelectronics have been shown to exhibit fractal topographies on the atomic scale. A model utilizing self-similar fractals to simulate surface roughness has been added to the ion bombardment code TRIM. The model has successfully predicted experimental sputtering yields of low energy (less then 1000 eV) Ar on Si and D on C using experimentally determined fractal dimensions. Under ion bombardment the fractal surface structures evolve as the atoms in the collision cascade are displaced or sputtered. These atoms have been tracked and the evolution of the surface in steps of one monolayer of flux has been determined. The Ar--Si system has been studied for incidence energies of 100 and 500 eV, and incidence angles of 0 degree, 30 degree, and 60 degree. As expected, normally incident ion bombardment tends to reduce the roughness of the surface, whereas large angle ion bombardment increases the degree of surface roughness. Of particular interest though, the surfaces are still locally self-similar fractals after ion bombardment and a steady state fractal dimension is reached, except at large angles of incidence

  13. Mechanisms of ion-bombardment-induced DNA transfer into bacterial E. coli cells

    Energy Technology Data Exchange (ETDEWEB)

    Yu, L.D., E-mail: yuld@thep-center.org [Thailand Center of Excellence in Physics, Commission on Higher Education, 328 Si Ayutthaya Road, Bangkok 10400 (Thailand); Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Sangwijit, K. [Molecular Biology Laboratory, Department of Biology, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Prakrajang, K. [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Faculty of Science, Maejo University, Chiang Mai 50290 (Thailand); Phanchaisri, B. [Institute of Science and Technology Research, Chiang Mai University, Chiang Mai 50200 (Thailand); Thongkumkoon, P. [Thailand Center of Excellence in Physics, Commission on Higher Education, 328 Si Ayutthaya Road, Bangkok 10400 (Thailand); Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Thopan, P. [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Singkarat, S. [Thailand Center of Excellence in Physics, Commission on Higher Education, 328 Si Ayutthaya Road, Bangkok 10400 (Thailand); Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Anuntalabhochai, S. [Molecular Biology Laboratory, Department of Biology, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand)

    2014-05-01

    Highlights: • Ion bombardment could induce DNA transfer into E. coli cells. • The DNA transfer induction depended on ion energy and fluence. • The mechanism was associated with the bacterial cell envelope structure. • A mechanism phase diagram was proposed to summarize the mechanism. - Abstract: As a useful ion beam biotechnology, ion-bombardment-induced DNA transfer into bacterial Escherichia coli (E. coli) cells has been successfully operated using argon ions. In the process ion bombardment of the bacterial cells modifies the cell envelope materials to favor the exogenous DNA molecules to pass through the envelope to enter the cell. The occurrence of the DNA transfer induction was found ion energy and fluence dependent in a complex manner. At ion energy of a few keV and a few tens of keV to moderate fluences the DNA transfer could be induced by ion bombardment of the bacterial cells, while at the same ion energy but to high fluences DNA transfer could not be induced. On the other hand, when the ion energy was medium, about 10–20 keV, the DNA transfer could not be induced by ion bombardment of the cells. The complexity of the experimental results indicated a complex mechanism which should be related to the complex structure of the bacterial E. coli cell envelope. A phase diagram was proposed to interpret different mechanisms involved as functions of the ion energy and fluence.

  14. Mechanisms of ion-bombardment-induced DNA transfer into bacterial E. coli cells

    International Nuclear Information System (INIS)

    Yu, L.D.; Sangwijit, K.; Prakrajang, K.; Phanchaisri, B.; Thongkumkoon, P.; Thopan, P.; Singkarat, S.; Anuntalabhochai, S.

    2014-01-01

    Highlights: • Ion bombardment could induce DNA transfer into E. coli cells. • The DNA transfer induction depended on ion energy and fluence. • The mechanism was associated with the bacterial cell envelope structure. • A mechanism phase diagram was proposed to summarize the mechanism. - Abstract: As a useful ion beam biotechnology, ion-bombardment-induced DNA transfer into bacterial Escherichia coli (E. coli) cells has been successfully operated using argon ions. In the process ion bombardment of the bacterial cells modifies the cell envelope materials to favor the exogenous DNA molecules to pass through the envelope to enter the cell. The occurrence of the DNA transfer induction was found ion energy and fluence dependent in a complex manner. At ion energy of a few keV and a few tens of keV to moderate fluences the DNA transfer could be induced by ion bombardment of the bacterial cells, while at the same ion energy but to high fluences DNA transfer could not be induced. On the other hand, when the ion energy was medium, about 10–20 keV, the DNA transfer could not be induced by ion bombardment of the cells. The complexity of the experimental results indicated a complex mechanism which should be related to the complex structure of the bacterial E. coli cell envelope. A phase diagram was proposed to interpret different mechanisms involved as functions of the ion energy and fluence

  15. MD and BCA simulations of He and H bombardment of fuzz in bcc elements

    Science.gov (United States)

    Klaver, T. P. C.; Zhang, S.; Nordlund, K.

    2017-08-01

    We present results of MD simulations of low energy He ion bombardment of low density fuzz in bcc elements. He ions can penetrate several micrometers into sparse fuzz, which allows for a sufficient He flux through it to grow the fuzz further. He kinetic energy falls off exponentially with penetration depth. A BCA code was used to carry out the same ion bombardment on the same fuzz structures as in MD simulations, but with simpler, 10 million times faster calculations. Despite the poor theoretical basis of the BCA at low ion energies, and the use of somewhat different potentials in MD and BCA calculations, the ion penetration depths predicted by BCA are only ∼12% less than those predicted by MD. The MD-BCA differences are highly systematic and trends in the results of the two methods are very similar. We have carried out more than 200 BCA calculation runs of ion bombardment of fuzz, in which parameters in the ion bombardment process were varied. For most parameters, the results show that the ion bombardment process is quite generic. The ion species (He or H), ion mass, fuzz element (W, Ta, Mo, Fe) and fuzz element lattice parameter turned out to have a modest influence on ion penetration depths at most. An off-normal angle of incidence strongly reduces the ion penetration depth. Increasing the ion energy increases the ion penetration, but the rate by which ion energy drops off at high ion energies follows the same exponential pattern as at lower energies.

  16. ANALYTICAL MODELING OF ELECTRON BACK-BOMBARDMENT INDUCED CURRENT INCREASE IN UN-GATED THERMIONIC CATHODE RF GUNS

    Energy Technology Data Exchange (ETDEWEB)

    Edelen, J. P. [Fermilab; Sun, Y. [Argonne; Harris, J. R. [AFRL, NM; Lewellen, J. W. [Los Alamos Natl. Lab.

    2016-09-28

    In this paper we derive analytical expressions for the output current of an un-gated thermionic cathode RF gun in the presence of back-bombardment heating. We provide a brief overview of back-bombardment theory and discuss comparisons between the analytical back-bombardment predictions and simulation models. We then derive an expression for the output current as a function of the RF repetition rate and discuss relationships between back-bombardment, fieldenhancement, and output current. We discuss in detail the relevant approximations and then provide predictions about how the output current should vary as a function of repetition rate for some given system configurations.

  17. Surface characterization of polymethylmetacrylate bombarded by charged water droplets

    International Nuclear Information System (INIS)

    Hiraoka, Kenzo; Takaishi, Riou; Asakawa, Daiki; Sakai, Yuji; Iijima, Yoshitoki

    2009-01-01

    The electrospray droplet impact (EDI), in which the charged electrospray water droplets are introduced in vacuum, accelerated, and allowed to impact the sample, is applied to polymethylmetacrylate (PMMA). The secondary ions generated were measured by an orthogonal time-of-flight mass spectrometer. In EDI mass spectra for PMMA, fragment ions originating from PMMA could not be detected. This is due to the fact that the proton affinities of fragments formed from PMMA are smaller than those from acetic acid contained in the charged droplet. The x-ray photoelectron spectroscopy spectra of PMMA irradiated by water droplets did not change with prolonged cluster irradiation, i.e., EDI is capable of shallow surface etching for PMMA with a little damage of the sample underneath the surface.

  18. Irradiation damage of alkali halide crystals during positron bombardment

    International Nuclear Information System (INIS)

    Arefiev, K.P.; Arefiev, V.P.; Vorobiev, S.A.

    1978-01-01

    The bleaching effect of positron irradiation of KCl and KBr single crystals previously coloured with electrons or protons was investigated. Positrons injection in the coloured alkali halide samples reduced the F-centres concentration considerably. For KCl crystals thicker than the positrons range the appearance of additional bands in the absorption spectra is noticeable. The experimental data show that the bleaching phenomenon should be observed merely throughout the positron exposure both for irradiated and non-irradiated regions of the sample. Irradiation effects, due to positron source, on the peak counting rate of (γ-γ) angular correlation in KCl crystals under applied magnetic field were also investigated. The growth of peak counting rate shows the increase of positronium-like states formation near defects of cation sublattice. (author)

  19. Scattering of polarized protons by yttrium, iron and nickel nuclei

    International Nuclear Information System (INIS)

    Melssen, J.P.M.G.

    1978-01-01

    Results are presented of scattering experiments performed on yttrium and some iron and nickel isotopes with polarized proton beams at energies around 20 MeV. The angular distributions of the differential cross sections and analyzing powers have been measured and comparison of these with predictions from theoretical models has led to information about excited nuclear states like spin, parity and details of the wavefunctions. The DWBA has been mostly used to describe the reaction at the bombarding energies and for the target nuclei investigated. (C.F.)

  20. Deposition of silicon oxynitride films by low energy ion beam assisted nitridation at room temperature

    Energy Technology Data Exchange (ETDEWEB)

    Youroukov, S; Kitova, S; Danev, G [Central Laboratory of Photoprocesses, Bulgarian Academy of Sciences, Acad. G. Bonchev Str., Bl. 109, 113 Sofia (Bulgaria)], E-mail: skitova@clf.bas.bg

    2008-05-01

    The possibility is studied of growing thin silicon oxynitride films by e-gun evaporation of SiO and SiO{sub 2} together with concurrent bombardment with low energy N{sub 2}{sup +} ions from a cyclotron resonance (ECR) source at room temperature of substrates. The degree of nitridation and oxidation of the films is investigated by means of X-ray spectroscopy. The optical characteristics of the films, their environmental stability and adhesion to different substrates are examined. The results obtained show than the films deposited are transparent. It is found that in the case of SiO evaporation with concurrent N{sub 2}{sup +} ion bombardment, reactive implantation of nitrogen within the films takes place at room temperature of the substrate with the formation of a new silicon oxynitride compound even at low ion energy (150-200 eV)

  1. Deposition of silicon oxynitride films by low energy ion beam assisted nitridation at room temperature

    Science.gov (United States)

    Youroukov, S.; Kitova, S.; Danev, G.

    2008-05-01

    The possibility is studied of growing thin silicon oxynitride films by e-gun evaporation of SiO and SiO2 together with concurrent bombardment with low energy N2+ ions from a cyclotron resonance (ECR) source at room temperature of substrates. The degree of nitridation and oxidation of the films is investigated by means of X-ray spectroscopy. The optical characteristics of the films, their environmental stability and adhesion to different substrates are examined. The results obtained show than the films deposited are transparent. It is found that in the case of SiO evaporation with concurrent N2+ ion bombardment, reactive implantation of nitrogen within the films takes place at room temperature of the substrate with the formation of a new silicon oxynitride compound even at low ion energy (150-200 eV).

  2. Medipix2 as a tool for proton beam characterization

    Science.gov (United States)

    Bisogni, M. G.; Cirrone, G. A. P.; Cuttone, G.; Del Guerra, A.; Lojacono, P.; Piliero, M. A.; Romano, F.; Rosso, V.; Sipala, V.; Stefanini, A.

    2009-08-01

    Proton therapy is a technique used to deliver a highly accurate and effective dose for the treatment of a variety of tumor diseases. The possibility to have an instrument able to give online information could reduce the time necessary to characterize the proton beam. To this aim we propose a detection system for online proton beam characterization based on the Medipix2 chip. Medipix2 is a detection system based on a single event counter read-out chip, bump-bonded to silicon pixel detector. The read-out chip is a matrix of 256×256 cells, 55×55 μm 2 each. To demonstrate the capabilities of Medipix2 as a proton detector, we have used a 62 MeV flux proton beam at the CATANA beam line of the LNS-INFN laboratory. The measurements performed confirmed the good imaging performances of the Medipix2 system also for the characterization of proton beams.

  3. Medipix2 as a tool for proton beam characterization

    Energy Technology Data Exchange (ETDEWEB)

    Bisogni, M.G. [Department of Physics, University of Pisa and INFN Sezione di Pisa, Pisa (Italy); Cirrone, G.A.P.; Cuttone, G. [INFN Laboratori Nazionali del Sud, Catania (Italy); Del Guerra, A. [Department of Physics, University of Pisa and INFN Sezione di Pisa, Pisa (Italy); Lojacono, P. [INFN Laboratori Nazionali del Sud, Catania (Italy); Piliero, M.A. [Department of Physics, University of Pisa and INFN Sezione di Pisa, Pisa (Italy); Romano, F. [INFN Laboratori Nazionali del Sud, Catania (Italy); Rosso, V. [Department of Physics, University of Pisa and INFN Sezione di Pisa, Pisa (Italy)], E-mail: valeria.rosso@pi.infn.it; Sipala, V. [Department of Physics and Astronomy, University of Catania and INFN Sezione di Catania, Catania (Italy); Stefanini, A. [Department of Physics, University of Pisa and INFN Sezione di Pisa, Pisa (Italy)

    2009-08-01

    Proton therapy is a technique used to deliver a highly accurate and effective dose for the treatment of a variety of tumor diseases. The possibility to have an instrument able to give online information could reduce the time necessary to characterize the proton beam. To this aim we propose a detection system for online proton beam characterization based on the Medipix2 chip. Medipix2 is a detection system based on a single event counter read-out chip, bump-bonded to silicon pixel detector. The read-out chip is a matrix of 256x256 cells, 55x55 {mu}m{sup 2} each. To demonstrate the capabilities of Medipix2 as a proton detector, we have used a 62 MeV flux proton beam at the CATANA beam line of the LNS-INFN laboratory. The measurements performed confirmed the good imaging performances of the Medipix2 system also for the characterization of proton beams.

  4. Medipix2 as a tool for proton beam characterization

    International Nuclear Information System (INIS)

    Bisogni, M.G.; Cirrone, G.A.P.; Cuttone, G.; Del Guerra, A.; Lojacono, P.; Piliero, M.A.; Romano, F.; Rosso, V.; Sipala, V.; Stefanini, A.

    2009-01-01

    Proton therapy is a technique used to deliver a highly accurate and effective dose for the treatment of a variety of tumor diseases. The possibility to have an instrument able to give online information could reduce the time necessary to characterize the proton beam. To this aim we propose a detection system for online proton beam characterization based on the Medipix2 chip. Medipix2 is a detection system based on a single event counter read-out chip, bump-bonded to silicon pixel detector. The read-out chip is a matrix of 256x256 cells, 55x55 μm 2 each. To demonstrate the capabilities of Medipix2 as a proton detector, we have used a 62 MeV flux proton beam at the CATANA beam line of the LNS-INFN laboratory. The measurements performed confirmed the good imaging performances of the Medipix2 system also for the characterization of proton beams.

  5. Modeling the Proton Radiation Belt With Van Allen Probes Relativistic Electron-Proton Telescope Data

    Science.gov (United States)

    Selesnick, R. S.; Baker, D. N.; Kanekal, S. G.; Hoxie, V. C.; Li, X.

    2018-01-01

    An empirical model of the proton radiation belt is constructed from data taken during 2013-2017 by the Relativistic Electron-Proton Telescopes on the Van Allen Probes satellites. The model intensity is a function of time, kinetic energy in the range 18-600 MeV, equatorial pitch angle, and L shell of proton guiding centers. Data are selected, on the basis of energy deposits in each of the nine silicon detectors, to reduce background caused by hard proton energy spectra at low L. Instrument response functions are computed by Monte Carlo integration, using simulated proton paths through a simplified structural model, to account for energy loss in shielding material for protons outside the nominal field of view. Overlap of energy channels, their wide angular response, and changing satellite orientation require the model dependencies on all three independent variables be determined simultaneously. This is done by least squares minimization with a customized steepest descent algorithm. Model uncertainty accounts for statistical data error and systematic error in the simulated instrument response. A proton energy spectrum is also computed from data taken during the 8 January 2014 solar event, to illustrate methods for the simpler case of an isotropic and homogeneous model distribution. Radiation belt and solar proton results are compared to intensities computed with a simplified, on-axis response that can provide a good approximation under limited circumstances.

  6. The surface topography of Inconel, stainless steel and copper after argon ion bombardment

    International Nuclear Information System (INIS)

    Vogelbruch, K.; Vietzke, E.

    1983-01-01

    Energetic particle bombardment of metals is known to change the surface topography. To simulate the behaviour of the first wall of a fusion device under real plasma conditions, we have investigated the surface topography of rotating targets after 30 keV argon ion bombardment at 70deg incident angle by electron scanning micrographs. Under these conditions Inconel 600, 601, 625, stainless steel, and copper showed no cones, pyramids or cliffs, but only etching figures and at higher ion doses relatively flat hills. Thus, it can be concluded, that the influence of energetic particles on the first wall of a fusion reactor is smaller than expected from the results of such sputtering experiments, which have dealt with the formation of surface structures under ion bombardment at constant incident direction. (author)

  7. Excited-atom production by electron and ion bombardment of alkali halides

    International Nuclear Information System (INIS)

    Walkup, R.E.; Avouris, P.; Ghosh, A.P.

    1987-01-01

    We present experimental results on the production of excited atoms by electron and ion bombardment of alkali halides. For the case of electron bombardment, Doppler shift measurements show that the electronically excited atoms have a thermal velocity distribution in equilibrium with the surface temperature. Measurements of the absolute yield of excited atoms, the distribution of population among the excited states, and the systematic dependence on incident electron current and sample temperature support a model in which the excited atoms are produced by gas-phase collisions between desorbed ground-state atoms and secondary electrons. In contrast, for the case of ion bombardment, the excited atoms are directly sputtered from the surface, with velocity distributions characteristic of a collision cascade, and with typical energies of --10 eV

  8. Alteration of the UV-visible reflectance spectra of H2O ice by ion bombardment

    Science.gov (United States)

    Sack, N. J.; Boring, J. W.; Johnson, R. E.; Baragiola, R. A.; Shi, M.

    1991-01-01

    Satellite in the Jovian and Saturnian system exhibit differences in reflectivity between their 'leading' and 'trailing' surfaces which can affect the local vapor pressure. Since these differences are thought to be due to differences in the flux of bombarding magnetospheric ions, the influence of ion impact on the UV-visible reflectance of water ice surfaces (20-90 K) by keV ion bombardment was studied. An observed decrease in reflectance in the UV is attributed to rearrangement processes that affect the physical microstructure and surface 'roughness'. The ratio in reflectance of bombarded to freshly deposited films is compared to the ratio of the reflectance of the leading and trailing hemispheres for Europa and Ganymede.

  9. InN: Fermi level stabilization by low-energy ion bombardment

    International Nuclear Information System (INIS)

    Piper, L.F.J.; Veal, T.D.; McConville, C.F.; Lu, H.; Schaff, W.J.

    2006-01-01

    The near-surface electronic properties of InN have been investigated with high-resolution electron-energy loss spectroscopy. Low-energy (∝400 eV) nitrogen ion bombardment followed by low temperature annealing (<300 C) was found to dramatically increase the n-type conductivity of InN, close to the surface. This is explained in terms of the formation of amphoteric defects from the ion bombardment and annealing combined with the band structure of InN. Low-energy ion bombardment and annealing is shown to result in a damage-induced, donor-like defect-profile instead of the expected electron accumulation for InN. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  10. Proton imaging apparatus for proton therapy application

    International Nuclear Information System (INIS)

    Sipala, V.; Lo Presti, D.; Brianzi, M.; Civinini, C.; Bruzzi, M.; Scaringella, M.; Talamonti, C.; Bucciolini, M.; Cirrone, G.A.P.; Cuttone, G.; Randazzo, N.; Stancampiano, C.; Tesi, M.

    2011-01-01

    Radiotherapy with protons, due to the physical properties of these particles, offers several advantages for cancer therapy as compared to the traditional radiotherapy and photons. In the clinical use of proton beams, a p CT (Proton Computer Tomography) apparatus can contribute to improve the accuracy of the patient positioning and dose distribution calculation. In this paper a p CT apparatus built by the Prima (Proton Imaging) Italian Collaboration will be presented and the preliminary results will be discussed.

  11. Proton radioactivity from proton-rich nuclei

    International Nuclear Information System (INIS)

    Guzman, F.; Goncalves, M.; Tavares, O.A.P.; Duarte, S.B.; Garcia, F.; Rodriguez, O.

    1999-03-01

    Half-lives for proton emission from proton-rich nuclei have been calculated by using the effective liquid drop model of heavy-particle decay of nuclei. It is shown that this model is able to offer results or spontaneous proton-emission half-life-values in excellent agreement with the existing experimental data. Predictions of half-life-values for other possible proton-emission cases are present for null orbital angular momentum. (author)

  12. Particle identification by silicon detectors

    International Nuclear Information System (INIS)

    Santos, Denison de Souza

    1997-01-01

    A method is developed for the evaluation of the energy loss, dE/dx, of a charged particle traversing a silicon strip detector. The method is applied to the DELPHI microvertex detector leading to diagrams of dE/dx versus momentum for different particles. The specific case of pions and protons is treated and the most probable value of dE/dx and the width of the dE/dx distribution for those particles in the momentum range of 0.2 GeV/c to 1.5 GeV/c, are obtained. The resolution found is 13.4 % for particles with momentum higher than 2 GeV/c and the separation power is 2.9 for 1.0 GeV/c pions and protons. (author)

  13. An ion beam deceleration lens for ultra-low-energy ion bombardment of naked DNA

    Energy Technology Data Exchange (ETDEWEB)

    Thopan, P.; Prakrajang, K. [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Thongkumkoon, P. [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Thailand Center of Excellence in Physics, Commission on Higher Education, 328 Si Ayutthaya Road, Bangkok 10400 (Thailand); Suwannakachorn, D. [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Yu, L.D., E-mail: yuldyuld@gmail.com [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Thailand Center of Excellence in Physics, Commission on Higher Education, 328 Si Ayutthaya Road, Bangkok 10400 (Thailand)

    2013-07-15

    Highlights: ► An ion beam deceleration lens was designed and constructed. ► The deceleration lens was installed and tested. ► The decelerated ion beam energy was measured using an electrical field. ► Decelerated ultra-low-energy ion beam bombarded naked DNA. ► Ion beam with energy of a few tens of eV could break DNA strands. -- Abstract: Study of low-energy ion bombardment effect on biological living materials is of significance. High-energy ion beam irradiation of biological materials such as organs and cells has no doubt biological effects. However, ion energy deposition in the ion-bombarded materials dominantly occurs in the low-energy range. To investigate effects from very-low-energy ion bombardment on biological materials, an ion beam deceleration lens is necessary for uniform ion energy lower than keV. A deceleration lens was designed and constructed based on study of the beam optics using the SIMION program. The lens consisted of six electrodes, able to focus and decelerate primary ion beam, with the last one being a long tube to obtain a parallel uniform exiting beam. The deceleration lens was installed to our 30-kV bioengineering-specialized ion beam line. The final decelerated-ion energy was measured using a simple electrostatic field to bend the beam to range from 10 eV to 1 keV controlled by the lens parameters and the primary beam condition. In a preliminary test, nitrogen ion beam at 60 eV decelerated from a primary 20-keV beam bombarded naked plasmid DNA. The original DNA supercoiled form was found to change to relaxed and linear forms, indicating single or double strand breaks. The study demonstrated that the ion bombardment with energy as low as several-tens eV was possible to break DNA strands and thus potential to cause genetic modification of biological cells.

  14. An ion beam deceleration lens for ultra-low-energy ion bombardment of naked DNA

    International Nuclear Information System (INIS)

    Thopan, P.; Prakrajang, K.; Thongkumkoon, P.; Suwannakachorn, D.; Yu, L.D.

    2013-01-01

    Highlights: ► An ion beam deceleration lens was designed and constructed. ► The deceleration lens was installed and tested. ► The decelerated ion beam energy was measured using an electrical field. ► Decelerated ultra-low-energy ion beam bombarded naked DNA. ► Ion beam with energy of a few tens of eV could break DNA strands. -- Abstract: Study of low-energy ion bombardment effect on biological living materials is of significance. High-energy ion beam irradiation of biological materials such as organs and cells has no doubt biological effects. However, ion energy deposition in the ion-bombarded materials dominantly occurs in the low-energy range. To investigate effects from very-low-energy ion bombardment on biological materials, an ion beam deceleration lens is necessary for uniform ion energy lower than keV. A deceleration lens was designed and constructed based on study of the beam optics using the SIMION program. The lens consisted of six electrodes, able to focus and decelerate primary ion beam, with the last one being a long tube to obtain a parallel uniform exiting beam. The deceleration lens was installed to our 30-kV bioengineering-specialized ion beam line. The final decelerated-ion energy was measured using a simple electrostatic field to bend the beam to range from 10 eV to 1 keV controlled by the lens parameters and the primary beam condition. In a preliminary test, nitrogen ion beam at 60 eV decelerated from a primary 20-keV beam bombarded naked plasmid DNA. The original DNA supercoiled form was found to change to relaxed and linear forms, indicating single or double strand breaks. The study demonstrated that the ion bombardment with energy as low as several-tens eV was possible to break DNA strands and thus potential to cause genetic modification of biological cells

  15. Molecular dynamics studies of the ion beam induced crystallization in silicon

    International Nuclear Information System (INIS)

    Marques, L.A.; Caturla, M.J.; Huang, H.

    1995-01-01

    We have studied the ion bombardment induced amorphous-to-crystal transition in silicon using molecular dynamics techniques. The growth of small crystal seeds embedded in the amorphous phase has been monitored for several temperatures in order to get information on the effect of the thermal temperature increase introduced by the incoming ion. The role of ion-induced defects on the growth has been also studied

  16. Recoil-proton fast-neutron counter telescope

    Energy Technology Data Exchange (ETDEWEB)

    Pavan, P.; Toniolo, D.; Zago, G.; Zannoni, R. (Padua Univ. (Italy). Ist. di Fisica); Galeazzi, G.; Bressanini, G.

    1981-12-01

    A recoil-proton neutron counter telescope is described composed of a solid-state silicon transmission detector and a NE 102 A plastic scintillator, measuring the energy loss, the energy of the recoil protons and the time of flight between the two detectors. The counter exposed to monoenergetic neutron beams of energy from 6 to 20 MeV presents a low background and a moderate energy resolution. Its absolute efficiency is calculated up to 50 MeV.

  17. Recoil-proton fast-neutron-counter telescope

    Energy Technology Data Exchange (ETDEWEB)

    Galeazzi, G.; Pavan, P.; Toniolo, D.; Zago, G.; Zannoni, R.; Bressanini, G.

    1981-01-01

    A proton-recoil neutron counter telescope is described composed of a solid state silicon transmission detector and a NE 102 A plastic scintillator, measuring the energy loss, the energy of the recoil protons and the time-of-flight between the two detectors. The counter exposed to monoenergetic neutron beams of energy from 6 to 20 MeV, presents a low background and a moderate energy resolution. Its absolute efficiency is calculated up to 50 MeV.

  18. A recoil-proton fast-neutron counter telescope

    International Nuclear Information System (INIS)

    Pavan, P.; Toniolo, D.; Zago, G.; Zannoni, R.; Galeazzi, G.; Bressanini, G.

    1981-01-01

    A recoil-proton neutron counter telescope is described composed of a solid-state silicon transmission detector and a NE 102 A plastic scintillator, measuring the energy loss, the energy of the recoil protons and the time of flight between the two detectors. The counter exposed to monoenergetic neutron beams of energy from 6 to 20 MeV presents a low background and a moderate energy resolution. Its absolute efficiency is calculated up to 50 MeV. (author)

  19. Ion bombardment effects on the fatigue life of stainless steel under simulated fusion first wall conditions

    International Nuclear Information System (INIS)

    Kohse, G.; Harling, O.K.

    1983-01-01

    Pressurized tube specimens have been exposed to simultaneous multi-energy surface ion bombardment, fast neutron irradiation and stress and temperature cycling, in a simulation of a possible fusion reactor first wall environment. After ion bombardments equivalent to months-years of reactor operation and up to 30,000 cycles, no detrimental effects on post-irradiation fatigue life were found. The ion damage is found to enhance surface cracking, but this effect is limited to the several micron surface layer in which the ions are implanted

  20. Effect of helium ion bombardment on hydrogen behaviour in stainless steel

    International Nuclear Information System (INIS)

    Guseva, M.I.; Stolyarova, V.G.; Gorbatov, E.A.

    1987-01-01

    The effect of helium ion bombardment on hydrogen behaviour in 12Kh18N10T stainless steel is investigated. Helium and hydrogen ion bombardment was conducted in the ILU-3 ion accelerator; the fluence and energy made up 10 16 -5x10 17 cm -2 , 30 keV and 10 16 -5x10 18 cm -2 , 10 keV respectively. The method of recoil nuclei was used for determination of helium and hydrogen content. Successive implantation of helium and hydrogen ions into 12Kh18N10T stainless steel results in hydrogen capture by defects formed by helium ions

  1. Ion bombardment induced surface topography modification of clean and contaminated single crystal Cu and Si

    International Nuclear Information System (INIS)

    Lewis, G.W.; Kiriakides, G.; Carter, G.; Nobes, M.J.

    1982-01-01

    Among the several factors which lead to depth resolution deterioration during sputter profiling, surface morphological modification resulting from local differences of sputtering rate can be important. This paper reports the results of direct scanning, electron microscopic studies obtained quasi-dynamically during increasing fluence ion bombardment of the evolution of etch pit structures on Si and Cu, and how such elaboration may be suppressed. It also reports on the elaboration of contaminant-induced cone generation for different ion species bombardment. The influence of such etch pit and cone generation on achievable depth resolution is assessed. (author)

  2. The influence of ion bombardment on emission properties of carbon materials

    International Nuclear Information System (INIS)

    Chepusov, Alexander; Komarskiy, Alexander; Kuznetsov, Vadim

    2014-01-01

    When electric-vacuum device works its cathode surface experiences bombardment with ions of residual gases. Effects of ion bombardment impact on surface of field emission cathodes made of carbon materials may essentially change emission properties of such cathodes. It changes emission start electric field strength, voltage vs. current characteristic of material, its relief and electron structure of the surface layer. Field emission cathode operating mode, variation of radiation doses allow to obtain both good effects: maximal electric current, surface recovery – and negative ones: the worst emission properties and surface destruction, amorphization.

  3. The influence of ion bombardment on emission properties of carbon materials

    Energy Technology Data Exchange (ETDEWEB)

    Chepusov, Alexander, E-mail: chepusov@iep.uran.ru [The Institute of Electrophysics of the Ural Division of the Russian Academy of Sciences (IEP UD RAS), 620016, 106 Amundsen Street, Ekaterinburg (Russian Federation); Ural Federal University, 620002, 19 Mira Street, Ekaterinburg (Russian Federation); Komarskiy, Alexander, E-mail: aakomarskiy@gmail.com [The Institute of Electrophysics of the Ural Division of the Russian Academy of Sciences (IEP UD RAS), 620016, 106 Amundsen Street, Ekaterinburg (Russian Federation); Ural Federal University, 620002, 19 Mira Street, Ekaterinburg (Russian Federation); Kuznetsov, Vadim, E-mail: kuznetsov@iep.uran.ru [The Institute of Electrophysics of the Ural Division of the Russian Academy of Sciences (IEP UD RAS), 620016, 106 Amundsen Street, Ekaterinburg (Russian Federation)

    2014-07-01

    When electric-vacuum device works its cathode surface experiences bombardment with ions of residual gases. Effects of ion bombardment impact on surface of field emission cathodes made of carbon materials may essentially change emission properties of such cathodes. It changes emission start electric field strength, voltage vs. current characteristic of material, its relief and electron structure of the surface layer. Field emission cathode operating mode, variation of radiation doses allow to obtain both good effects: maximal electric current, surface recovery – and negative ones: the worst emission properties and surface destruction, amorphization.

  4. Study on evolution of gases from fluoropolymer films bombarded with heavy ions

    International Nuclear Information System (INIS)

    Minamisawa, Renato Amaral; Zimmerman, Robert Lee; Budak, Satilmis; Ila, Daryush

    2008-01-01

    Ion beam bombardment provides a unique way of material modification by inducing a high degree of localized electronic excitation. The ion track, or affected volume along the ion path through the material is related to the total damage and possible structural changes. Here we study the evolution of gases emitted by poly(tetrafluorethylene-co-perfluoro-(propyl vinyl ether)) (PFA) fluoropolymer bombarded with MeV gold ions. The gas was monitored by a residual gas analyzer (RGA), as a function of the ion fluence. Micro-Raman, atomic force microscopy and optical absorption were used to analyze the chemical structure changes and sputtering yield

  5. Radiation damage studies for the D0 silicon detector

    International Nuclear Information System (INIS)

    Lehner, F.

    2004-01-01

    We report on irradiation studies performed on spare production silicon detector modules for the current D0 silicon detector. The lifetime expectations due to radiation damage effects of the existing silicon detector are reviewed. A new upgrade project was started with the goal of a complete replacement of the existing silicon detector. In that context, several investigations on the radiation hardness of new prototype silicon microstrip detectors were carried out. The irradiation on different detector types was performed with 10 MeV protons up to fluences of 10 14 p/cm 2 at the J.R. Mcdonald Laboratory at Kansas State University. The flux calibration was carefully checked using different normalization techniques. As a result, we observe roughly 40-50% less radiation damage in silicon for 10 MeV p exposure than it is expected by the predicted NIEL scaling

  6. Radiation damage studies for the DOe silicon detector

    International Nuclear Information System (INIS)

    Lehner, Frank

    2004-01-01

    We report on irradiation studies performed on spare production silicon detector modules for the current DOe silicon detector. The lifetime expectations due to radiation damage effects of the existing silicon detector are reviewed. A new upgrade project was started with the goal of a complete replacement of the existing silicon detector. In that context, several investigations on the radiation hardness of new prototype silicon microstrip detectors were carried out. The irradiation on different detector types was performed with 10 MeV protons up to fluences of 10 14 p/cm 2 at the J.R. Mcdonald Laboratory at Kansas State University. The flux calibration was carefully checked using different normalisation techniques. As a result, we observe roughly 40-50% less radiation damage in silicon for 10 MeV p exposure than it is expected by the predicted NIEL scaling

  7. Performance of irradiated silicon microstrip detectors

    International Nuclear Information System (INIS)

    Catacchini, E.; Civinini, C.; D'Alessandro, R.; Focardi, E.; Lenzi, M.; Meschini, M.; Parrini, G.; Pieri, M.

    1999-01-01

    Silicon microstrip devices to be installed in Large Hadron Collider (LHC) tracking detectors will have to operate in a high radiation environment. We report on performance studies of silicon microstrip detectors irradiated with neutrons or protons, up to fluences comparable to the first ten years of running at LHC. Obtained results show that irradiated detectors can still be operated with satisfactory signal-to-noise ratio,and in the case of inhomogeneously type inverted detector a very good position resolution is achieved regardless of the zone crossed by the particle

  8. Silicon vertex tracker for RHIC PHENIX experiment

    Energy Technology Data Exchange (ETDEWEB)

    Taketani, A [RIKEN, Nishina Ctr Accelerator Based Sci, Wako, Saitama, Japan; Cianciolo, Vince [ORNL; Enokizono, Akitomo [Oak Ridge National Laboratory (ORNL); PHENIX, Collaboration [The

    2010-01-01

    The PHENIX experiment at Relativistic Heavy Ion Collider will be equipped with Silicon Vertex tracker to enhance its physics capability. There are four layers of silicon sensor to reconstruct charged tracks with 50 {micro}m resolution of decay length measurement. The VTX surrounds the collision point. The inner two layers and the outer two layers are composed of 30 pixel ladders and 44 stripixel ladders, respectively. We have been developing these detectors and done a performance test with 120 GeV proton beam.

  9. Proton induced X-ray emission (PIXE) analysis at Lucas Heights

    International Nuclear Information System (INIS)

    Cohen, D.; Duerden, P.

    1979-02-01

    The state of the proton induced X-ray emission (PIXE) work at Lucas Heights is reported together with a full description of the experimental arrangement and its use for analysis of trace elements (Z >or= 14). The fundamentals of PIXE are examined in detail with a view to understanding not only the background continuum but also the X-ray production mechanisms. Quantitative predictions for the number of X-rays detected after proton bombardment of the target have been made and these compare well with experiments

  10. Experimental study of the response of radiochromic films to proton radiation of low energy

    International Nuclear Information System (INIS)

    Mercado-Uribe, H.; Gamboa-deBuen, I.; Buenfil, A.E.; Avila, O.; Brandan, M.E.

    2009-01-01

    We have investigated the response of radiochromic films (MD-55 and HD-810) exposed to protons of 0.6 MeV. Each film is bombarded with a proton beam in an angular geometry, in such a way that the absorbed dose is related to angle. Depending on the energy and the angular fluence, the irradiated volume is total or partial. We compare the dose of these irradiated films with fully irradiated films exposed to γ radiation from a 60 Co calibrated source.

  11. Proton movies

    CERN Multimedia

    2009-01-01

    A humorous short film made by three secondary school students received an award at a Geneva film festival. Even without millions of dollars or Hollywood stars at your disposal, it is still possible to make a good science fiction film about CERN. That is what three students from the Collège Madame de Staël in Carouge, near Geneva, demonstrated. For their amateur short film on the LHC, they were commended by the jury of the video and multimedia festival for schools organised by the "Media in education" service of the Canton of Geneva’s Public Education Department. The film is a spoof of a television news report on the LHC start-up. In sequences full of humour and imagination, the reporter conducts interviews with a very serious "Professor Sairne", some protons preparing for their voyage and even the neutrons that were rejected by the LHC. "We got the idea of making a film about CERN at the end of the summer," explains Lucinda Päsche, one of the three students. "We did o...

  12. Geochemistry of silicon isotopes

    Energy Technology Data Exchange (ETDEWEB)

    Ding, Tiping; Li, Yanhe; Gao, Jianfei; Hu, Bin [Chinese Academy of Geological Science, Beijing (China). Inst. of Mineral Resources; Jiang, Shaoyong [China Univ. of Geosciences, Wuhan (China).

    2018-04-01

    Silicon is one of the most abundant elements in the Earth and silicon isotope geochemistry is important in identifying the silicon source for various geological bodies and in studying the behavior of silicon in different geological processes. This book starts with an introduction on the development of silicon isotope geochemistry. Various analytical methods are described and compared with each other in detail. The mechanisms of silicon isotope fractionation are discussed, and silicon isotope distributions in various extraterrestrial and terrestrial reservoirs are updated. Besides, the applications of silicon isotopes in several important fields are presented.

  13. Dry Etch Black Silicon with Low Surface Damage: Effect of Low Capacitively Coupled Plasma Power

    DEFF Research Database (Denmark)

    Iandolo, Beniamino; Plakhotnyuk, Maksym; Gaudig, Maria

    2017-01-01

    Black silicon fabricated by reactive ion etch (RIE) is promising for integration into silicon solar cells thanks to its excellent light trapping ability. However, intensive ion bombardment during the RIE induces surface damage, which results in enhanced surface recombination velocity. Here, we pr...... carrier lifetime thanks to reduced ion energy. Surface passivation using atomic layer deposition of Al2O3 improves the effective lifetime to 7.5 ms and 0.8 ms for black silicon n- and p-type wafers, respectively.......Black silicon fabricated by reactive ion etch (RIE) is promising for integration into silicon solar cells thanks to its excellent light trapping ability. However, intensive ion bombardment during the RIE induces surface damage, which results in enhanced surface recombination velocity. Here, we...... present a RIE optimization leading to reduced surface damage while retaining excellent light trapping and low reflectivity. In particular, we demonstrate that the reduction of the capacitively coupled power during reactive ion etching preserves a reflectance below 1% and improves the effective minority...

  14. Influence of ion bombardment on growth and properties of PLD created DLC films

    Czech Academy of Sciences Publication Activity Database

    Jelínek, Miroslav; Písařík, Petr; Kocourek, Tomáš; Zemek, Josef; Lukeš, J.

    2013-01-01

    Roč. 110, č. 4 (2013), s. 943-947 ISSN 0947-8396 R&D Projects: GA MŠk LD12069 Institutional research plan: CEZ:AV0Z10100522 Keywords : DLC * ion bombardment * sp3 /sp2 * thin films * PLD Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.694, year: 2013

  15. High Energy Ion Bombardment Simulation Facility at the University of Pittsburgh

    International Nuclear Information System (INIS)

    McGruer, J.N.; Choyke, W.J.; Doyle, N.J.; Spitznagel, J.A.

    1975-01-01

    The High Energy Ion Bombardment Simulation (HEIBS) Facility located at the University of Pittsburgh is now operational. The E-22 tandem accelerator of the Nuclear Physics Laboratory, fitted with a UNIS source, provides the heavy high energy ions. An auxiliary Van de Graaff accelerator is used for the simultaneous production of He ions. Special features of the simulation laboratory are reported

  16. Theoretical simulations of atomic and polyatomic bombardment of an organic overlayer on a metallic substrate

    CERN Document Server

    Krantzman, K D; Delcorte, A; Garrison, B J

    2003-01-01

    Our previous molecular dynamics simulations on initial test systems have laid the foundation for understanding some of the effects of polyatomic bombardment. In this paper, we describe simulations of the bombardment of a more realistic model system, an overlayer of sec-butyl-terminated polystyrene tetramers on a Ag left brace 1 1 1 right brace substrate. We have used this model system to study the bombardment with Xe and SF sub 5 projectiles at kinetic energies ranging from 0.50 to 5.0 keV. SF sub 5 sputters more molecules than Xe, but a higher percentage of these are damaged rather than ejected intact when the bombarding energy is greater than 0.50 keV. Therefore, at energies comparable to experimental values, the efficiency, measured as the yield-to-damage ratio, is greater with Xe than SF sub 5. Stable and intact molecules are generally produced by upward moving substrate atoms, while fragments are produced by the upward and lateral motion of reflected projectile atoms and fragments from the target molecul...

  17. A note on the random walk theory of recoil movement in prolonged ion bombardment

    International Nuclear Information System (INIS)

    Koponen, Ismo

    1994-01-01

    A characteristic function is derived for the probability distribution of final positions of recoil atoms in prolonged ion bombardment of dense matter. The derivation is done within the framework of Poissonian random walk theory using a jump distribution, which is somewhat more general than those studied previously. ((orig.))

  18. Materials surface modification by plasma bombardment under simultaneous erosion and redeposition conditions

    International Nuclear Information System (INIS)

    Hirooka, Y.; Goebel, D.M.; Conn, R.W.

    1986-07-01

    The first in-depth investigation of surface modification of materials by continuous, high-flux argon plasma bombardment under simultaneous erosion and redeposition conditions have been carried out for copper and 304 stainless steel using the PISCES facility. The plasma bombardment conditions are: incident ion flux range from 10 17 to 10 19 ions sec -1 cm -2 , total ion fluence is controlled between 10 19 and 10 22 ions cm -2 , electron temperature range from 5 to 15 eV, and plasma density range from 10 11 to 10 13 cm -3 . The incident ion energy is 100 eV. The sample temperature is between 300 and 700K. Under redeposition dominated conditions, the material erosion rate due to the plasma bombardment is significantly smaller (by a factor up to 10) than that can be expected from the classical ion beam sputtering yield data. It is found that surface morphologies of redeposited materials strongly depend on the plasma bombardment condition. The effect of impurities on surface morphology is elucidated in detail. First-order modelings are implemented to interpret the reduced erosion rate and the surface evolution. Also, fusion related surface properties of redeposited materials such as hydrogen reemission and plasma driven permeation have been characterized

  19. Stable transformation via particle bombardment in two different soybean regeneration systems.

    Science.gov (United States)

    Sato, S; Newell, C; Kolacz, K; Tredo, L; Finer, J; Hinchee, M

    1993-05-01

    The Biolistics(®) particle delivery system for the transformation of soybean (Glycine max L. Merr.) was evaluated in two different regeneration systems. The first system was multiple shoot proliferation from shoot tips obtained from immature zygotic embryos of the cultivar Williams 82, and the second was somatic embryogenesis from a long term proliferative suspension culture of the cultivar Fayette. Bombardment of shoot tips with tungsten particles, coated with precipitated DNA containing the gene for β-glucuronidase (GUS), produced GUS-positive sectors in 30% of the regenerated shoots. However, none of the regenerants which developed into plants continued to produce GUS positive tissue. Bombardment of embryogenic suspension cultures produced GUS positive globular somatic embryos which proliferated into GUS positive somatic embryos and plants. An average of 4 independent transgenic lines were generated per bombarded flask of an embryogenic suspension. Particle bombardment delivered particles into the first two cell layers of either shoot tips or somatic embryos. Histological analysis indicated that shoot organogenesis appeared to involve more than the first two superficial cell layers of a shoot tip, while somatic embryo proliferation occurred from the first cell layer of existing somatic embryos. The different transformation results obtained with these two systems appeared to be directly related to differences in the cell types which were responsible for regeneration and their accessibility to particle penetration.

  20. Effects of low-energy ion beam bombardment on metal oxides

    International Nuclear Information System (INIS)

    Sullivan, J.L.; Saied, S.O.; Choudhury, T.

    1993-01-01

    This paper describes a study of Ar ion bombardment damage in metal oxides. In the energy range 1 to 5 keV, preferential oxygen removal and reduction of the oxides was found to depend on ion current density, but to be independent of beam energy. (author)

  1. Proposals for the heating mechanism of an electron-bombarded body

    International Nuclear Information System (INIS)

    Geller, R.; Yerouchalmi, F.

    1967-01-01

    When a thermally isolated target in vacuum is bombarded by an electron beam the target becomes red. In this paper we try a heuristic explanation indicating how the kinetic power of the beam may be transformed into radiation power controlled by Stefan law. (authors) [fr

  2. Bombardment of gas molecules on single graphene layer at high temperature

    Energy Technology Data Exchange (ETDEWEB)

    Murugesan, Ramki [School of Mechanical and Aerospace Engineering, Gyeongsang National University, Jinju, Gyeongnam 660-701 (Korea, Republic of); Park, Jae Hyun [Department of Aerospace and System Engineering and Research Center for Aircraft Parts Technology, Gyeongsang National University, Jinju, Gyeongnam 660-701 (Korea, Republic of); Ha, Dong Sung [Future Propulsion Center, Agency for Defense Development, Daejeon 305-600 (Korea, Republic of)

    2014-12-09

    Graphite is widely used as a material for rocket-nozzle inserts due to its excellent thermo-physical properties as well as low density. During the operation of rockets, the surface of the graphite nozzle is subjected to very high heat fluxes and the undesirable erosion of the surface occurs due to the bombardment of gas molecules with high kinetic energy, which causes a significant reduction of nozzle performance. However, the understanding and quantification of such bombardment is not satisfactory due to its complexity: The bond breaking-forming happens simultaneously for the carbon atoms of graphene, some gas molecules penetrate through the surface, some of them are reflected from the surface, etc. In the present study, we perform extensive molecular dynamics (MD) simulations to examine the bombardment phenomena in high temperature environment (several thousand Kelvin). Advanced from the previous studies that have focused on the bombardment by light molecules (e.g., H{sub 2}), we will concentrate on the impact by realistic molecules (e.g., CO{sub 2} and H{sub 2}O). LAMMPS is employed for the MD simulations with NVE ensemble and AIREBO potential for graphene. The molecular understanding of the interaction between graphene and highly energetic gas molecules will enable us to design an efficient thermo-mechanical protection system.

  3. Ion bombardment damage in a modified Fe-9Cr-1Mo steel

    International Nuclear Information System (INIS)

    Farrell, K.; Lee, E.H.

    1984-01-01

    A normalized-and-tempered Fe-9Cr-1Mo steel, with small Nb and V additions, was bombarded with 4-MeV iron ions to 100 dpa at 400, 450, 500, 550, and 600 0 C. Major damage feature was dislocation tangles which coarsened with increasing bombardment temperature. Sparse cavities were heterogeneously distributed at 500 and 550 0 C. Incorporation of helium and deuterium simultaneously in the bombardments at rates of 10 and 45 appM/dpa, respectively, introduced very high concentrations of small cavities at all temperatures, many of them on grain boundaries. These cavities were shown to be promoted by helium. A small fraction of the matrix cavities exhibited bias-driven growth at 500 and 550 0 C, with swelling 0 C higher than the peak swelling temperature found in neutron irradiations, which is compatible with the higher damage rate used in the ion bombardments. High concentrations of subgrain boundaries and dislocations resulting from the heat treatment, and unbalanced cavity and dislocation sink strengths in the damage structures contribute to the swelling resistance. Such resistance may not be permanent. High densities of bubbles on grain boundaries indicate a need for helium embrittlement tests

  4. Modeling the reduction of gross lithium erosion observed under high-flux deuterium bombardment

    NARCIS (Netherlands)

    Abrams, T.; Jaworski, M. A.; Kaita, R.; Nichols, J. H.; Stotler, D. P.; De Temmerman, G.; van den Berg, M. A.; van der Meiden, H. J.; Morgan, T. W.

    2015-01-01

    Abstract Both thin (<1 μm) and thick (∼500 μm) lithium films under high-flux deuterium and neon plasma bombardment were studied in the linear plasma device Magnum-PSI at ion fluxes >1024 m−2 s−1 and surface temperatures <700 °C.

  5. Erosion of lithium coatings on TZM molybdenum and graphite during high-flux plasma bombardment

    NARCIS (Netherlands)

    Abrams, T.; Jaworski, M. A.; Kaita, R.; Stotler, D. P.; De Temmerman, G.; Morgan, T. W.; van den Berg, M. A.; van der Meiden, H. J.

    2014-01-01

    Abstract The rate at which Li films will erode under plasma bombardment in the NSTX-U divertor is currently unknown. It is important to characterize this erosion rate so that the coatings can be replenished before they are completely depleted. An empirical formula for the Li erosion rate as a

  6. Emission of positive oxygen ions from ion bombardment of adsorbate-covered metal surfaces

    International Nuclear Information System (INIS)

    Kaurin, M.G.

    1989-01-01

    During ion bombardment of metal surfaces, collision cascades can result in the emission of sputtered secondary ions. Recent experiments, however, have suggested that the emission of positive ions of electronegative adsorbates can result from electronic processes rather than from processes involving elastic collisions. This dissertation presents the results of experiments studying the emission of positive oxygen ions from oxygen- and carbon-monoxide-covered transition metal surfaces during bombardment by 25-250 keV ions of neon, argon, and krypton. The systems studied may be grouped into four categories. For a nickel substrate with adsorbed oxygen, the emission of positive oxygen ions proceeds through collision cascades. For titanium and niobium with adsorbed oxygen, the emission of positive oxygen ions is proportional to the primary ion velocity, consistent with emission from electronic processes; for a given primary ion velocity, the oxygen ion yield is independent of primary ion species. For substrates of molybdenum and tungsten, the oxygen yield is proportional to primary ion velocity, but the yield also depends on the primary ion species for a given primary ion velocity in a manner that is consistent with emission resulting from electronic processes. For these two groups, except for titanium, the yields during neon ion bombardment do not extrapolate (assuming linearity with primary ion velocity) to a nonzero value at zero beam velocity. The magnitude of the oxygen ion yields from these targets is not consistent with that expected if the emission were induced by secondary electrons emitted during the ion bombardment

  7. Bombardment-induced compositional change with alloys, oxides, and oxysalts. 1

    International Nuclear Information System (INIS)

    Kelly, R.

    1989-01-01

    A review of the role of surface binding energies in bombardment-induced compositional change with alloys, oxides and oxysalts is presented. The concepts of preferential sputtering and compositional change may or may not coincide; their differences are clarified. 77 refs.; 12 figs.; 4 tabs

  8. Particle bombardment and the genetic enhancement of crops: myths and realities

    NARCIS (Netherlands)

    Altpeter, F.; Baisakh, N.; Beachy, R.; Bock, R.; Capell, T.; Christou, P.; Daniell, H.; Datta, K.; Datta, S.; Dix, P.J.; Fauquet, C.; Huang, N.; Kohli, A.; Mooibroek, H.; Nicholson, L.; Nguyen, T.T.; Nugent, G.; Raemakers, C.J.J.M.; Romano, A.; Somers, D.A.; Stoger, E.; Taylor, N.; Visser, R.G.F.

    2005-01-01

    DNA transfer by particle bombardment makes use of physical processes to achieve the transformation of crop plants. There is no dependence on bacteria, so the limitations inherent in organisms such as Agrobacterium tumefaciens do not apply. The absence of biological constraints, at least until DNA

  9. Measures to alleviate the back bombardment effect of thermionic rf electron gun

    International Nuclear Information System (INIS)

    Huang, Y.; Xie, J.

    1991-01-01

    Thermionic rf electron gun finds application as a high brightness electron source for rf linacs. However, cathode heating from back-bombardment effect causes a ramp in the macro-pulse beam current and limit the usable pulse width. Three methods: ring cathode, magnetic deflection and laser assisted heating are studied in theory and in experiment. The results of these studies are reported

  10. Direct thermal effects of the Hadean bombardment did not limit early subsurface habitability

    Science.gov (United States)

    Grimm, R. E.; Marchi, S.

    2018-03-01

    Intense bombardment is considered characteristic of the Hadean and early Archean eons, yet some detrital zircons indicate that near-surface water was present and thus at least intervals of clement conditions may have existed. We investigate the habitability of the top few kilometers of the subsurface by updating a prior approach to thermal evolution of the crust due to impact heating, using a revised bombardment history, a more accurate thermal model, and treatment of melt sheets from large projectiles (>100 km diameter). We find that subsurface habitable volume grows nearly continuously throughout the Hadean and early Archean (4.5-3.5 Ga) because impact heat is dissipated rapidly compared to the total duration and waning strength of the bombardment. Global sterilization was only achieved using an order of magnitude more projectiles in 1/10 the time. Melt sheets from large projectiles can completely resurface the Earth several times prior to ∼4.2 Ga but at most once since then. Even in the Hadean, melt sheets have little effect on habitability because cooling times are short compared to resurfacing intervals, allowing subsurface biospheres to be locally re-established by groundwater infiltration between major impacts. Therefore the subsurface is always habitable somewhere, and production of global steam or silicate-vapor atmospheres are the only remaining avenues to early surface sterilization by bombardment.

  11. Kinetics of interaction from low-energy-ion bombardment of surfaces

    International Nuclear Information System (INIS)

    Horton, C.C.

    1988-01-01

    The kinetics of interaction from low energy oxygen ion bombardment of carbon and Teflon surfaces have been investigated. The surfaces were bombarded with 4.5 to 93 eV oxygen ions and emitted species were observed with a mass spectrometer. To obtain the kinetic information, the ion beam was square pulse modulated and reaction products were observed as a function of time. The kinetic information is contained in the response of the emitted species to the pulsed ion beam. Oxygen bombardment of carbon produced CO in three parallel branches with each following an adsorption-desorption process. The fast branch, with a rate constants of 12,000/sec, appeared to be sputter induced an was absent below about 19 eV. The medium and slow branches, with rate constants of 850/sec and 45/sec respectively, has little energy dependence and appeared to be due to chemical sputtering from two sites. The ratio of the fraction of the medium branch to that of the slow was constant at 1:3. The bombardment of Teflon produced CF in two parallel branches, with one following a series process and the other an adsorb-desorb process. The rate constant of the other branch were 22,000/sec and 7,000/sec and the rate constant of the other branch was 90/sec. The total signal fell monotonically with decreasing ion energy with the fraction for each branch holding constant at 71% for the series and 29% for the adsorb-desorb

  12. Effect of Ar bombardment on the electrical and optical properties of ...

    Indian Academy of Sciences (India)

    The influence of low-energy Ar ion beam irradiation on both electrical and optical properties of low-density polyethylene (LDPE) films is presented. The polymer films were bombarded with 320 keV Ar ions with fuences up to 1 × 10 15 cm − 2 . Electrical properties of LDPE films were measured and the effect of ion ...

  13. Secondary ion yield changes in Si and GaAs due to topography changes during O+2 or Cs+ ion bombardment

    International Nuclear Information System (INIS)

    Stevie, F.A.; Kahora, P.M.; Simons, D.S.; Chi, P.

    1988-01-01

    Changes in secondary ion yields of matrix and dopant species have been correlated with changes in surface topography during O + 2 bombardment of Si and GaAs. In Si, profiles were measured in (100) wafers at 6- and 8-keV impact energy. At 6 keV, a yield increase of about 70% occurred for Si + over a depth range of 2.5 to 3.5 μm, with changes in other species ranging from a decrease of ∼20% for Si + 3 to an increase of more than 25% for O + . The development of a rippled surface topography was observed in scanning electron micrographs over the same depth range. Similar effects occurred over a 3--5 μm depth range for 8-keV ions, and in (111) silicon at a depth of 3 to 4 μm for 6-keV ions. No differences were noted between p- and n-type silicon, or implanted and unimplanted silicon. In GaAs, profiles were measured in (100) wafers at 2.5-, 5.5-, and 8-keV impact energies. At 8 keV, a yield increase of about 70% was found for GaO + in the range 0.6--1.0 μm, with smaller changes for other matrix species. At 5.5 keV, similar effects were observed, but over a depth interval of 0.3 to 0.7 μm. No yield changes were detected at 2.5-keV impact energy. The yield changes at the higher energies were again correlated with the onset of changes in topography. No change in ion yield or surface topography was noted for Cs + bombardment of Si or GaAs. The topography and ion yield changes are affected by the angle of incidence and, for Si, the oxygen coverage. The results show that the practice of normalizing secondary ion mass spectrometry dopant profiles to a matrix signal must be modified for situations where matrix yield changes occur

  14. Hydrogen pumping and release by graphite under high flux plasma bombardment

    International Nuclear Information System (INIS)

    Hirooka, Y.; Leung, W.K.; Conn, R.W.; Goebel, D.M.; LaBombard, B.; Nygren, R.; Wilson, K.L.

    1988-01-01

    Inert gas (helium or argon) plasma bombardment has been found to increase the surface gas adsorptivity of isotropic graphite (POCO-graphite), which can then getter residual gases in a high vacuum system. The inert gas plasma bombardment was carried out at a flux ≅ 1 x 10 18 ions s -1 cm -2 to a fluence of the order of 10 21 ions/cm 2 and at temperatures around 800 0 C. The gettering capability of graphite can be easily recovered by repeating inert gas plasma bombardment. The activated graphite surface exhibits a smooth, sponge-like morphology with significantly increased pore openings, which correlates with the observed increase in the surface gas adsorptivity. The activated graphite surface has been observed to pump hydrogen plasma particles as well. From calibrated H-alpha measurements, the dynamic hydrogen retention capacity is evaluated to be as large as 2 x 10 18 H/cm 2 at temperatures below 100 0 C and at a plasma bombarding energy of 300 eV. The graphite temperature was varied between 15 and 480 0 C. Due to the plasma particle pumping capability, hydrogen recycling from the activated graphite surface is significantly reduced, relative to that from a pre-saturated surface. A pre-saturated surface was also observed to reproducibly pump a hydrogen plasma to a concentration of 9.5 x 10 17 H/cm 2 . The hydrogen retention capacity of graphite is found to decrease with increasing temperature. A transient pumping mechanism associated with the sponge-like surface morphology is conjectured to explain the large hydrogen retention capacity. Hydrogen release behavior under helium and argon plasma bombardment was also investigated, and the result indicated the possibility of some in-pore retrapping effect. 43 refs., 11 figs

  15. Search for heavy lepton resonances decaying to a Z boson and a lepton in proton-proton collisions at √(s)=8 TeV with the ATLAS detector and investigations of radiation tolerant silicon-strip detectors for the high-luminosity LHC upgrade of the ATLAS inner detector

    Energy Technology Data Exchange (ETDEWEB)

    Wiik-Fuchs, Liv

    2017-03-09

    The success of particle physics experiments, like those at the Large Hardon Collider (LHC) at CERN, relies on a worldwide interdisciplinary collaboration in a variety of different fields. This thesis contributes to two vital aspects in this area of research:in the first part of a search for heavy trilepton resonances decaying to a Z boson and an electron or muon is presented, while the second part focusses on research and development of radiation tolerant silicon tracking detectors designed for the upgrade of the ATLAS detector for the future luminosity upgrade of the LHC. The search for trilepton resonances is based on pp collision data taken at a centre-of-mass energy of 8 TeV by the ATLAS experiment at the LHC corresponding to an integrated luminosity of 20.3 fb{sup -1}. To reconstruct the narrow resonance, events with at least three leptons (electrons or muons) with a high-transverse momentum are selected. Two of these leptons are required to be consistent with originating from a Z boson decay. Since no significant excess above Standard Model background predictions is observed, 95% confidence level upper limits on the production cross section of trilepton resonances beyond the Standard Model are derived. The results of this analysis are interpreted in the context of vector-like lepton and type-III seesaw models. For the vector-like lepton model, most heavy lepton mass values in the range 113-176 GeV are excluded. For the type-III seesaw model, most mass values in the range 100-474 GeV are excluded. The second part of this thesis focusses on the development of radiation-tolerant silicon strip detectors for the luminosity upgrade of the ATLAS detector envisaged to commence in the year 2016. This thesis includes the results of several studies which contribute to multiple key aspects required for a successful upgrade of the silicon strip detector of the ATLAS Inner Tracker. Among these are the results of a beam test providing the first comparative results between

  16. Search for heavy lepton resonances decaying to a Z boson and a lepton in proton-proton collisions at √(s)=8 TeV with the ATLAS detector and investigations of radiation tolerant silicon-strip detectors for the high-luminosity LHC upgrade of the ATLAS inner detector

    International Nuclear Information System (INIS)

    Wiik-Fuchs, Liv

    2017-01-01

    The success of particle physics experiments, like those at the Large Hardon Collider (LHC) at CERN, relies on a worldwide interdisciplinary collaboration in a variety of different fields. This thesis contributes to two vital aspects in this area of research:in the first part of a search for heavy trilepton resonances decaying to a Z boson and an electron or muon is presented, while the second part focusses on research and development of radiation tolerant silicon tracking detectors designed for the upgrade of the ATLAS detector for the future luminosity upgrade of the LHC. The search for trilepton resonances is based on pp collision data taken at a centre-of-mass energy of 8 TeV by the ATLAS experiment at the LHC corresponding to an integrated luminosity of 20.3 fb"-"1. To reconstruct the narrow resonance, events with at least three leptons (electrons or muons) with a high-transverse momentum are selected. Two of these leptons are required to be consistent with originating from a Z boson decay. Since no significant excess above Standard Model background predictions is observed, 95% confidence level upper limits on the production cross section of trilepton resonances beyond the Standard Model are derived. The results of this analysis are interpreted in the context of vector-like lepton and type-III seesaw models. For the vector-like lepton model, most heavy lepton mass values in the range 113-176 GeV are excluded. For the type-III seesaw model, most mass values in the range 100-474 GeV are excluded. The second part of this thesis focusses on the development of radiation-tolerant silicon strip detectors for the luminosity upgrade of the ATLAS detector envisaged to commence in the year 2016. This thesis includes the results of several studies which contribute to multiple key aspects required for a successful upgrade of the silicon strip detector of the ATLAS Inner Tracker. Among these are the results of a beam test providing the first comparative results between

  17. Proton-air and proton-proton cross sections

    Directory of Open Access Journals (Sweden)

    Ulrich Ralf

    2013-06-01

    Full Text Available Different attempts to measure hadronic cross sections with cosmic ray data are reviewed. The major results are compared to each other and the differences in the corresponding analyses are discussed. Besides some important differences, it is crucial to see that all analyses are based on the same fundamental relation of longitudinal air shower development to the observed fluctuation of experimental observables. Furthermore, the relation of the measured proton-air to the more fundamental proton-proton cross section is discussed. The current global picture combines hadronic proton-proton cross section data from accelerator and cosmic ray measurements and indicates a good consistency with predictions of models up to the highest energies.

  18. INC Model interpretation of the proton induced residual nuclide production cross sections below 2 GeV

    International Nuclear Information System (INIS)

    Divadeenam, M.; Ward, T.E.; Spergel, M.S.; Lakatos, S.; Manche, E.P.

    1991-01-01

    For the purposes of interpreting the abundances of various isotopes in meteorites or on lunar and planetary surfaces exposed to fragmentation by cosmic rays, Webber et al. recently reported the measured total elemental and isotopic cross sections with heavy ions as projectiles on H, He, and C targets with beam energies of 0.33 - 1.7 GeV/nucleon. We employ the INC model to predict the fragmentation of the heavy ions in a hydrogen target with the inverse reaction process: proton bombardment of a heavy-ion nucleus leading to spallation products. Charge-changing and mass-changing cross sections are calculated for proton bombardment of an 56 Fe target with beam energies ranging from 0.33 to 1.88 GeV. Total Z-changing and A-changing cross sections in the energy range 0.6 to 1.88 GeV are in excellent agreement with the corresponding experimental data of Webber et al. and Westfall at al., while the agreement below 0.6 GeV proton energy is not as good. The general trend of the Z-changing cross sections are reproduced by the model calculations at each proton incident energy. The interaction of 200-MeV protons with synthetic Stony Meteorite samples was undertaken to explain radionuclide production in a cosmic-ray environment. The BNL Linac 200-MeV-proton beam was used to irradiate synthetic Stony Meteorites to simulate cosmic-ray exposures corresponding to 6.4 and 16.4 million years. Each irradiated sample was analyzed with the help of a high-resolution gamma-ray spectrometer for long-lived radioisotopes. The intranuclear cascade code HETC was employed to simulate the 200-MeV proton bombardment on the meteorite samples to predict the radionuclides 7 Be, 22 Na, 46 Mn, and 56 Co produced in the experimental investigation

  19. Crystal Collimation Cleaning Measurements with Proton Beams in LHC

    CERN Document Server

    Rossi, Roberto; Andreassen, Odd Oyvind; Butcher, Mark; Dionisio Barreto, Cristovao Andre; Masi, Alessandro; Mirarchi, Daniele; Montesano, Simone; Lamas Garcia, Inigo; Redaelli, Stefano; Scandale, Walter; Serrano Galvez, Pablo; Rijllart, Adriaan; Valentino, Gianluca; CERN. Geneva. ATS Department

    2016-01-01

    During this MD, performed on July 29th, 2016, bent silicon crystal were tested with proton beams for a possible usage of crystal-assisted collimation. Tests were performed at both injection energy and flat top using horizontal and vertical crystal. Loss maps with crystals at 6.5 TeV were measured.

  20. Proton scattering on unstable nuclei: study of 40S(p,p') and 43Ar(p,p') reactions, development of detection system MUST

    International Nuclear Information System (INIS)

    Marechal, F.

    1998-01-01

    We measured for the first time the elastic and inelastic proton scattering on the 40 S unstable nucleus. The experiment was performed in inverse kinematics at the NSCL AT Michigan State University with a 40 S secondary beam bombarding a CH 2 target at 30 MeV/A. We obtained the elastic scattering angular distribution and two points of the inelastic distribution to the first 2 + excited state found to be located at 860±90 KeV. With a coupled channel analysis, the β 2 quadrupolar deformation parameter is found to be equal to 0.35±0.05. This value can be compared to 0.28±0.02 obtained by coulomb excitation. A macroscopic analysis allowed us to extract the neutron and proton transition matrix element ratio M n /M p which is equal to 1.88±0.38. This value, greater than N/Z, could indicate an isovector effect in the first 2 + state excitation which could be due to a difference between the neutron and proton vibrations. The microscopic analysis gives the possibility to test the densities and the transition densities to the first 2 + state. The calculated densities for the 40 S nucleus show a neutron skin. However the microscopic analysis yields a M n /M p ratio of 1.40±0.20. A similar elastic and inelastic proton scattering experiment allowed us to get a deformation parameter of 0.25±0.03 for the 43 Ar nucleus. To develop the study of direct reactions induced by radioactive beams at GANIL, we have developed and built, in collaboration with the CEA-Saclay and the CEA-Bruyeres, the new detector MUST.It is based on the silicon strip technology, and is dedicated to the measurement of recoiling light particles emitted in these reactions. The results obtained with a 40 Ar beam at 77 Me V/A, have shown the good performances of the detector for the particle identification as well as for the resolutions, and allow us to consider now a large experimental programme concerning these direct reactions induced by radioactive beams. These tests allowed us to establish a reference

  1. Proton microprobe analysis of pancreatic. beta. cells

    Energy Technology Data Exchange (ETDEWEB)

    Lindh, U [Uppsala Univ. (Sweden). Gustaf Werner Inst.; Juntti-Berggren, L; Berggren, P O; Hellman, B [Uppsala Univ. (Sweden)

    1985-01-01

    Freeze-dried pancreas sections from obese hyperglycemic mice were subjected to proton bombardment and the elemental contents in the ..beta.. cells and the exocrine part were obtained from the characteristic X-rays emitted. Quantitative data were provided for 18 different elements. The mole ratio between K and Na exceeded 10, implying that neither the sample preparation nor the irradiation had induced significant diffuse changes. With the demonstration of this high K/Na ratio it seems likely that also the ..beta.. cells are equipped with an efficient Na/sup +//K/sup +/ pump. The ..beta.. cells contained about 70 mmoles Cl per litre cell water. Observed amounts of Ca and Mg were equivalent to those previously recorded by electrothermal atomic absorption spectroscopy. The significant role of Zn for the storage of insulin was emphasized by the demonstration of 3 times as much of this element in the ..beta.. cells as compared with the exocrine pancreas. In addition, the sensitivity of the proton microprobe enabled measurements of various trace elements such as Rb, Cr, Cu, Al and Pb not previously demonstrated in the pancreatic ..beta.. cells.

  2. Proton therapy device

    International Nuclear Information System (INIS)

    Tronc, D.

    1994-01-01

    The invention concerns a proton therapy device using a proton linear accelerator which produces a proton beam with high energies and intensities. The invention lies in actual fact that the proton beam which is produced by the linear accelerator is deflected from 270 deg in its plan by a deflecting magnetic device towards a patient support including a bed the longitudinal axis of which is parallel to the proton beam leaving the linear accelerator. The patient support and the deflecting device turn together around the proton beam axis while the bed stays in an horizontal position. The invention applies to radiotherapy. 6 refs., 5 figs

  3. Radiation effects in the infrared absorption and the silicon structure

    International Nuclear Information System (INIS)

    Groza, A.A.; Litovchenko, P.G.; Starchik, M.Yi.

    2006-01-01

    The results of the long-term studies of the silicon irradiated by the high-energy particles are systemised. Using of the electrons, protons, reactor neutrons for irradiation and the wide range of the fluence irradiation have given the possibility to the authors to obtain the information on the character of the formed damages in the lattice of the silicon, to compare the effectiveness of the different damage input depending on the irradiation type, to obtain the information on the radiation damage reconstruction, their impact to the oxygen impurity behaviour, which influences substantially as the silicon properties, as the devices characteristics to be developed on its base

  4. Self-Healing, High-Permittivity Silicone Dielectric Elastomer

    DEFF Research Database (Denmark)

    Madsen, Frederikke Bahrt; Yu, Liyun; Skov, Anne Ladegaard

    2016-01-01

    possesses high dielectric permittivity and consists of an interpenetrating polymer network of silicone elastomer and ionic silicone species that are cross-linked through proton exchange between amines and acids. The ionically cross-linked silicone provides self-healing properties after electrical breakdown...... or cuts made directly to the material due to the reassembly of the ionic bonds that are broken during damage. The dielectric elastomers presented in this paper pave the way to increased lifetimes and the ability of dielectric elastomers to survive millions of cycles in high-voltage conditions....

  5. A 1024 pad silicon detector to solve tracking ambiguities in high multiplicity events

    International Nuclear Information System (INIS)

    Simone, S.; Catanesi, M.G.; Di Bari, D.; Didonna, V.; Elia, D.; Ghidini, B.; Lenti, V.; Manzari, V.; Nappi, E.

    1996-01-01

    Silicon detectors with two-dimensional pad readout have been designed and constructed for the WA97 experiment at CERN, in order to solve ambiguities for track reconstruction in a silicon microstrip telescope. A high density fanouts has been developed on a glass support to allow the electrical contacts between the detector and the front end electronics. Silicon pad detectors have been successfully operated both during the proton-Pb and Pb-Pb runs of the WA97 experiment. (orig.)

  6. Performance of a silicon microstrip detector in a high radiation environment

    International Nuclear Information System (INIS)

    Mishra, C.S.; Brown, C.N.; Kapustinsky, J.; Leitch, M.J.; McGaughey, P.L.; Peng, J.C.; Sailor, W.; Holzscheiter, K.; Sadler, M.

    1990-01-01

    This paper reports on the performance of a silicon microstrip detector that has been studied in a high rate environment using electron, pion, and proton beams. The pulse height, time response, and leakage current have been studied as a function of particle fluence up to a total integrated flus of about 4 x 10 14 protons/cm 2

  7. Study of the out-of-plane emission of protons and light fragments in symmetric heavy-ion collisions

    International Nuclear Information System (INIS)

    Brill, D.; Beckerle, P.; Bormann, C.; Schwab, E.; Shin, Y.; Stock, R.; Stroebele, H.; Baltes, P.; Muentz, C.; Oeschler, H.; Sturm, C.; Wagner, A.; Barth, R.; Cieslak, M.; Debowski, M.; Grosse, E.; Koczon, P.; Mang, M.; Miskowiec, D.; Schicker, R.; Senger, P.; Kohlmeyer, B.; Puehlhofer, F.; Speer, J.; Voelkel, K.; Walus, W.

    1996-01-01

    Midrapidity protons from 209 Bi+ 209 Bi collisions were measured with the Kaon Spectrometer at SIS at incident energies of E Lab /A=400, 700 and 1000 MeV. Additionally, light fragments were analysed at 400 MeV. We have investigated the azimuthal emission pattern of the particles relative to the reaction plane as function of transverse momentum, bombarding energy and impact parameter. We observe an enhanced emission of particles perpendicular to the reaction plane at all bombarding energies. The ratio of the number of particles emitted out-of-plane/in-plane increases strongly with the particles transverse momentum. The anisotropy decreases with increasing beam energy. Composite particles show a much stronger effect than protons. (orig.)

  8. Study of proton and 2 protons emission from light neutron deficient nuclei around A=20; Etude de l'emission proton et de deux protons dans les noyaux legers deficients en neutrons de la region A=20

    Energy Technology Data Exchange (ETDEWEB)

    Zerguerras, T

    2001-09-01

    Proton and two proton emission from light neutron deficient nuclei around A=20 have been studied. A radioactive beam of {sup 18}Ne, {sup 17}F and {sup 20}Mg, produced at the Grand Accelerateur National d'Ions Lourds by fragmentation of a {sup 24}Mg primary beam at 95 MeV/A, bombarded a {sup 9}Be target to form unbound states. Proton(s) and nuclei from the decay were detected respectively in the MUST array and the SPEG spectrometer. From energy and angle measurements, the invariant mass of the decaying nucleus could be reconstructed. Double coincidence events between a proton and {sup 17}F, {sup 16}O, {sup 15}O, {sup 14}O and {sup 18}Ne were registered to obtain excitation energy spectra of {sup 18}Ne, {sup 17}F, {sup 16}F, {sup 15}F et {sup 19}Na. Generally, the masses measures are in agreement with previous experiments. In the case of {sup 18}Ne, excitation energy and angular distributions agree well with the predictions of a break up model calculation. From {sup 17}Ne proton coincidences, a first experimental measurement of the ground state mass excess of {sup 18}Na has been obtained and yields 24,19(0,15)MeV. Two proton emission from {sup 17}Ne and {sup 18}Ne excited states and the {sup 19}Mg ground state was studied through triple coincidences between two proton and {sup 15}O, {sup 16}O and {sup 17}Ne respectively. In the first case, the proton-proton relative angle distribution in the center of mass has been compared with model calculation. Sequential emission from excited states of {sup 17}Ne, above the proton emission threshold, through {sup 16}F is dominant but a {sup 2}He decay channel could not be excluded. No {sup 2}He emission from the 1.288 MeV {sup 17}Ne state, or from the 6.15 MeV {sup 18}Ne state has been observed. Only one coincidence event between {sup 17}Ne and two proton was registered, the value of the one neutron stripping reaction cross section of {sup 20}Mg being much lower than predicted. (author)

  9. Study of proton and 2 protons emission from light neutron deficient nuclei around A=20; Etude de l'emission proton et de deux protons dans les noyaux legers deficients en neutrons de la region A=20

    Energy Technology Data Exchange (ETDEWEB)

    Zerguerras, T

    2001-09-01

    Proton and two proton emission from light neutron deficient nuclei around A=20 have been studied. A radioactive beam of {sup 18}Ne, {sup 17}F and {sup 20}Mg, produced at the Grand Accelerateur National d'Ions Lourds by fragmentation of a {sup 24}Mg primary beam at 95 MeV/A, bombarded a {sup 9}Be target to form unbound states. Proton(s) and nuclei from the decay were detected respectively in the MUST array and the SPEG spectrometer. From energy and angle measurements, the invariant mass of the decaying nucleus could be reconstructed. Double coincidence events between a proton and {sup 17}F, {sup 16}O, {sup 15}O, {sup 14}O and {sup 18}Ne were registered to obtain excitation energy spectra of {sup 18}Ne, {sup 17}F, {sup 16}F, {sup 15}F et {sup 19}Na. Generally, the masses measures are in agreement with previous experiments. In the case of {sup 18}Ne, excitation energy and angular distributions agree well with the predictions of a break up model calculation. From {sup 17}Ne proton coincidences, a first experimental measurement of the ground state mass excess of {sup 18}Na has been obtained and yields 24,19(0,15)MeV. Two proton emission from {sup 17}Ne and {sup 18}Ne excited states and the {sup 19}Mg ground state was studied through triple coincidences between two proton and {sup 15}O, {sup 16}O and {sup 17}Ne respectively. In the first case, the proton-proton relative angle distribution in the center of mass has been compared with model calculation. Sequential emission from excited states of {sup 17}Ne, above the proton emission threshold, through {sup 16}F is dominant but a {sup 2}He decay channel could not be excluded. No {sup 2}He emission from the 1.288 MeV {sup 17}Ne state, or from the 6.15 MeV {sup 18}Ne state has been observed. Only one coincidence event between {sup 17}Ne and two proton was registered, the value of the one neutron stripping reaction cross section of {sup 20}Mg being much lower than predicted. (author)

  10. Optimization of Proton CT Detector System and Image Reconstruction Algorithm for On-Line Proton Therapy.

    Directory of Open Access Journals (Sweden)

    Chae Young Lee

    Full Text Available The purposes of this study were to optimize a proton computed tomography system (pCT for proton range verification and to confirm the pCT image reconstruction algorithm based on projection images generated with optimized parameters. For this purpose, we developed a new pCT scanner using the Geometry and Tracking (GEANT 4.9.6 simulation toolkit. GEANT4 simulations were performed to optimize the geometric parameters representing the detector thickness and the distance between the detectors for pCT. The system consisted of four silicon strip detectors for particle tracking and a calorimeter to measure the residual energies of the individual protons. The optimized pCT system design was then adjusted to ensure that the solution to a CS-based convex optimization problem would converge to yield the desired pCT images after a reasonable number of iterative corrections. In particular, we used a total variation-based formulation that has been useful in exploiting prior knowledge about the minimal variations of proton attenuation characteristics in the human body. Examinations performed using our CS algorithm showed that high-quality pCT images could be reconstructed using sets of 72 projections within 20 iterations and without any streaks or noise, which can be caused by under-sampling and proton starvation. Moreover, the images yielded by this CS algorithm were found to be of higher quality than those obtained using other reconstruction algorithms. The optimized pCT scanner system demonstrated the potential to perform high-quality pCT during on-line image-guided proton therapy, without increasing the imaging dose, by applying our CS based proton CT reconstruction algorithm. Further, we make our optimized detector system and CS-based proton CT reconstruction algorithm potentially useful in on-line proton therapy.

  11. Maskless proton beam writing in gallium arsenide

    Energy Technology Data Exchange (ETDEWEB)

    Mistry, P. [Ion Beam Centre, University of Surrey, Guildford GU2 7XH (United Kingdom) and Nano-Electronics Centre, Advanced Technology Institute, University of Surrey, Guildford GU2 7XH (United Kingdom)]. E-mail: p.mistry@surrey.ac.uk; Gomez-Morilla, I. [Ion Beam Centre, University of Surrey, Guildford GU2 7XH (United Kingdom); Smith, R.C. [Nano-Electronics Centre, Advanced Technology Institute, University of Surrey, Guildford GU2 7XH (United Kingdom); Thomson, D. [Advanced Technology Institute, University of Surrey, Guildford GU2 7XH (United Kingdom); Grime, G.W. [Ion Beam Centre, University of Surrey, Guildford GU2 7XH (United Kingdom); Webb, R.P. [Ion Beam Centre, University of Surrey, Guildford GU2 7XH (United Kingdom); Gwilliam, R. [Ion Beam Centre, University of Surrey, Guildford GU2 7XH (United Kingdom); Jeynes, C. [Ion Beam Centre, University of Surrey, Guildford GU2 7XH (United Kingdom); Cansell, A. [Ion Beam Centre, University of Surrey, Guildford GU2 7XH (United Kingdom); Merchant, M. [Ion Beam Centre, University of Surrey, Guildford GU2 7XH (United Kingdom); Kirkby, K.J. [Ion Beam Centre, University of Surrey, Guildford GU2 7XH (United Kingdom)

    2007-07-15

    Proton beam writing (PBW) is a direct write technique that employs a focused MeV proton beam which is scanned in a pre-determined pattern over a target material which is subsequently electrochemically etched or chemically developed. By changing the energy of the protons the range of the protons can be changed. The ultimate depth of the structure is determined by the range of the protons in the material and this allows structures to be formed to different depths. PBW has been successfully employed on etchable glasses, polymers and semiconductor materials such as silicon (Si) and gallium arsenide (GaAs). This study reports on PBW in p-type GaAs and compares experimental results with computer simulations using the Atlas (copy right) semiconductor device package from SILVACO. It has already been proven that hole transport is required for the electrochemical etching of GaAs using Tiron (4,5-dihydroxy-m-benzenedisulfonic acid, di-sodium salt). PBW in GaAs results in carrier removal in the irradiated regions and consequently minimal hole transport (in these regions) during electrochemical etching. As a result the irradiated regions are significantly more etch resistant than the non-irradiated regions. This allows high aspect ratio structures to be formed.

  12. Maskless proton beam writing in gallium arsenide

    International Nuclear Information System (INIS)

    Mistry, P.; Gomez-Morilla, I.; Smith, R.C.; Thomson, D.; Grime, G.W.; Webb, R.P.; Gwilliam, R.; Jeynes, C.; Cansell, A.; Merchant, M.; Kirkby, K.J.

    2007-01-01

    Proton beam writing (PBW) is a direct write technique that employs a focused MeV proton beam which is scanned in a pre-determined pattern over a target material which is subsequently electrochemically etched or chemically developed. By changing the energy of the protons the range of the protons can be changed. The ultimate depth of the structure is determined by the range of the protons in the material and this allows structures to be formed to different depths. PBW has been successfully employed on etchable glasses, polymers and semiconductor materials such as silicon (Si) and gallium arsenide (GaAs). This study reports on PBW in p-type GaAs and compares experimental results with computer simulations using the Atlas (copy right) semiconductor device package from SILVACO. It has already been proven that hole transport is required for the electrochemical etching of GaAs using Tiron (4,5-dihydroxy-m-benzenedisulfonic acid, di-sodium salt). PBW in GaAs results in carrier removal in the irradiated regions and consequently minimal hole transport (in these regions) during electrochemical etching. As a result the irradiated regions are significantly more etch resistant than the non-irradiated regions. This allows high aspect ratio structures to be formed

  13. Investigation of /sup 16/O+/sup 27/Al reaction at bombarding energies below 5. 3 MeV/A

    Energy Technology Data Exchange (ETDEWEB)

    Wen-Qing, Shen; Yong-Tai, Zhu; Wen-Long, Zhan; Zhong-Yan, Guo; Shu-Zhi, Yin; Wei-Min, Qiao; En-Chiu, Wu

    1987-03-01

    Quasi elastic and deep inelastic collision induced by /sup 16/O+/sup 27/Al at the bombarding energies below 5.3 MeV/A have been studied in detail. Experimental angular energy atomic charge distribution and contour plots of the differential cross sections d/sup 3/sigma/dEd..cap omega..dZ on E-theta plan are presented, their evolution with the bombarding energies are analysed. The competion between quasi elastic and deep inelastic collision as a functon of the bombarding energies has been discussed.

  14. Erosion of Be and deposition of C and O due to bombardment with C{sup +} and CO{sup +}

    Energy Technology Data Exchange (ETDEWEB)

    Eckstein, W.; Goldstrass, P.; Linsmeier, Ch. [Max-Planck-Institut fuer Plasmaphysik, Garching (Germany)

    1998-01-01

    The bombardment of Be with 3 and 5 keV C{sup +} and CO{sup +} at normal incidence is investigated experimentally and by computer simulation with the program TRIDYN. The deposited amount of C and O is determined experimentally and found in good agreement with calculated data for C bombardment. Chemical erosion dominates at higher fluences for CO{sup +} bombardment. Calculations are then used to determine the sputter yield of Be at steady state conditions as a function of the plasma edge electron temperature for two C impurity concentrations in the incident D flux, typical for fusion plasmas. The fluence to reach steady state conditions is also investigated. (author)

  15. Elastic proton-proton scattering at RHIC

    Energy Technology Data Exchange (ETDEWEB)

    Yip, K.

    2011-09-03

    Here we describe elastic proton+proton (p+p) scattering measurements at RHIC in p+p collisions with a special optics run of {beta}* {approx} 21 m at STAR, at the center-of-mass energy {radical}s = 200 GeV during the last week of the RHIC 2009 run. We present preliminary results of single and double spin asymmetries.

  16. Baryon production in proton-proton collisions

    International Nuclear Information System (INIS)

    Liu, F.M.; Werner, K.

    2002-01-01

    Motivated by the recent rapidity spectra of baryons and antibaryons in pp collisions at 158 GeV and the Ω-bar/Ω ratio discussion, we reviewed string formation mechanism and some string models. This investigation told us how color strings are formed in ultrarelativistic proton-proton collisions

  17. Doubly versus Singly Positively Charged Oxygen Ions Back-Scattering from a Silicon Surface under Dynamic O2+ Bombardment

    Czech Academy of Sciences Publication Activity Database

    Franzreb, K.; Williams, P.; Lörinčík, Jan; Šroubek, Zdeněk

    203-204, 1/4 (2003), s. 39-42 ISSN 0169-4332 Institutional research plan: CEZ:AV0Z2067918; CEZ:AV0Z4040901 Keywords : low-energy ion scattering * doubly charged ions * molecular orbital Subject RIV: CF - Physical ; Theoretical Chemistry Impact factor: 1.284, year: 2003

  18. Single event upsets calculated from new ENDF/B-VI proton and neutron data up to 150 MeV

    International Nuclear Information System (INIS)

    Chadwick, M.B.

    1999-01-01

    Single-event upsets (SEU) in microelectronics are calculated from newly-developed silicon nuclear reaction recoil data that extend up to 150 MeV, for incident protons and neutrons. Calculated SEU cross sections are compared with measured data

  19. Radiation resistance of amorphous silicon alloy solar cells

    International Nuclear Information System (INIS)

    Hanak, J.J.; Chen, E.; Myatt, A.; Woodyard, J.R.

    1987-01-01

    The radiation resistance of a-Si alloy solar cells when bombarded by high energy particles is reviewed. The results of investigations of high energy proton radiation resistance of a-Si alloy thin film photovoltaic cells are reported. Irradiations were carried out with 200 keV and 1.00 MeV protons with fluences ranging betweeen 1E11 and 1E15 cm-2. Defect generation and passivation mechanisms were studied using the AM1 conversion efficiency and isochronal anneals. It is concluded that the primary defect generation mechanism results from the knock-on of Si and Ge in the intrinsic layer of the cells. The defect passivation proceeds by the complex annealing of Si and Ge defects and not by the simple migration of hydrogen

  20. Comparison of calculated and experimental values of the yields of xenon isotopes in reactions with high-energy protons

    International Nuclear Information System (INIS)

    Shukolyukov, A.Yu.; Katargin, N.V.; Baishev, I.S.

    1989-01-01

    Calculations of the cumulative yields of isotopes of Xe have been carried out on the basis of the semi-empirical formula of Silverberg and Tsao for Ba- and Dy-targets and bombarding proton energies in the range 100-1050 MeV. Results are compared with experimental data for the yields of Xe isotopes, and domains of applicability of the semi-empirical formula are determined

  1. Buried oxide layer in silicon

    Science.gov (United States)

    Sadana, Devendra Kumar; Holland, Orin Wayne

    2001-01-01

    A process for forming Silicon-On-Insulator is described incorporating the steps of ion implantation of oxygen into a silicon substrate at elevated temperature, ion implanting oxygen at a temperature below 200.degree. C. at a lower dose to form an amorphous silicon layer, and annealing steps to form a mixture of defective single crystal silicon and polycrystalline silicon or polycrystalline silicon alone and then silicon oxide from the amorphous silicon layer to form a continuous silicon oxide layer below the surface of the silicon substrate to provide an isolated superficial layer of silicon. The invention overcomes the problem of buried isolated islands of silicon oxide forming a discontinuous buried oxide layer.

  2. Porous silicon-based direct hydrogen sulphide fuel cells.

    Science.gov (United States)

    Dzhafarov, T D; Yuksel, S Aydin

    2011-10-01

    In this paper, the use of Au/porous silicon/Silicon Schottky type structure, as a direct hydrogen sulphide fuel cell is demonstrated. The porous silicon filled with hydrochlorid acid was developed as a proton conduction membrane. The Au/Porous Silicon/Silicon cells were fabricated by first creating the porous silicon layer in single-crystalline Si using the anodic etching under illumination and then deposition Au catalyst layer onto the porous silicon. Using 80 mM H2S solution as fuel the open circuit voltage of 0.4 V was obtained and maximum power density of 30 W/m2 at room temperature was achieved. These results demonstrate that the Au/Porous Silicon/Silicon direct hydrogen sulphide fuel cell which uses H2S:dH2O solution as fuel and operates at room temperature can be considered as the most promising type of low cost fuel cell for small power-supply units.

  3. Proton: the particle.

    Science.gov (United States)

    Suit, Herman

    2013-11-01

    The purpose of this article is to review briefly the nature of protons: creation at the Big Bang, abundance, physical characteristics, internal components, and life span. Several particle discoveries by proton as the experimental tool are considered. Protons play important roles in science, medicine, and industry. This article was prompted by my experience in the curative treatment of cancer patients by protons and my interest in the nature of protons as particles. The latter has been stimulated by many discussions with particle physicists and reading related books and journals. Protons in our universe number ≈10(80). Protons were created at 10(-6) -1 second after the Big Bang at ≈1.37 × 10(10) years beforethe present. Proton life span has been experimentally determined to be ≥10(34) years; that is, the age of the universe is 10(-24)th of the minimum life span of a proton. The abundance of the elements is hydrogen, ≈74%; helium, ≈24%; and heavier atoms, ≈2%. Accordingly, protons are the dominant baryonic subatomic particle in the universe because ≈87% are protons. They are in each atom in our universe and thus involved in virtually every activity of matter in the visible universe, including life on our planet. Protons were discovered in 1919. In 1968, they were determined to be composed of even smaller particles, principally quarks and gluons. Protons have been the experimental tool in the discoveries of quarks (charm, bottom, and top), bosons (W(+), W(-), Z(0), and Higgs), antiprotons, and antineutrons. Industrial applications of protons are numerous and important. Additionally, protons are well appreciated in medicine for their role in radiation oncology and in magnetic resonance imaging. Protons are the dominant baryonic subatomic particle in the visible universe, comprising ≈87% of the particle mass. They are present in each atom of our universe and thus a participant in every activity involving matter. Copyright © 2013 Elsevier Inc. All

  4. Proton: The Particle

    Energy Technology Data Exchange (ETDEWEB)

    Suit, Herman

    2013-11-01

    The purpose of this article is to review briefly the nature of protons: creation at the Big Bang, abundance, physical characteristics, internal components, and life span. Several particle discoveries by proton as the experimental tool are considered. Protons play important roles in science, medicine, and industry. This article was prompted by my experience in the curative treatment of cancer patients by protons and my interest in the nature of protons as particles. The latter has been stimulated by many discussions with particle physicists and reading related books and journals. Protons in our universe number ≈10{sup 80}. Protons were created at 10{sup −6} –1 second after the Big Bang at ≈1.37 × 10{sup 10} years beforethe present. Proton life span has been experimentally determined to be ≥10{sup 34} years; that is, the age of the universe is 10{sup −24}th of the minimum life span of a proton. The abundance of the elements is hydrogen, ≈74%; helium, ≈24%; and heavier atoms, ≈2%. Accordingly, protons are the dominant baryonic subatomic particle in the universe because ≈87% are protons. They are in each atom in our universe and thus involved in virtually every activity of matter in the visible universe, including life on our planet. Protons were discovered in 1919. In 1968, they were determined to be composed of even smaller particles, principally quarks and gluons. Protons have been the experimental tool in the discoveries of quarks (charm, bottom, and top), bosons (W{sup +}, W{sup −}, Z{sup 0}, and Higgs), antiprotons, and antineutrons. Industrial applications of protons are numerous and important. Additionally, protons are well appreciated in medicine for their role in radiation oncology and in magnetic resonance imaging. Protons are the dominant baryonic subatomic particle in the visible universe, comprising ≈87% of the particle mass. They are present in each atom of our universe and thus a participant in every activity involving matter.

  5. Proton scattering on unstable nuclei: study of {sup 40}S(p,p`) and {sup 43}Ar(p,p`) reactions, development of detection system MUST; Diffusion de protons par des noyaux instables: Etudes des reactions {sup 40}S(p,p`) et {sup 43}Ar(p,p`), developpement du systeme de detection MUST

    Energy Technology Data Exchange (ETDEWEB)

    Marechal, F

    1998-02-06

    We measured for the first time the elastic and inelastic proton scattering on the {sup 40}S unstable nucleus. The experiment was performed in inverse kinematics at the NSCL AT Michigan State University with a {sup 40}S secondary beam bombarding a CH{sub 2} target at 30 MeV/A. We obtained the elastic scattering angular distribution and two points of the inelastic distribution to the first 2{sup +} excited state found to be located at 860{+-}90 KeV. With a coupled channel analysis, the {beta}{sub 2} quadrupolar deformation parameter is found to be equal to 0.35{+-}0.05. This value can be compared to 0.28{+-}0.02 obtained by coulomb excitation. A macroscopic analysis allowed us to extract the neutron and proton transition matrix element ratio M{sub n}/M{sub p} which is equal to 1.88{+-}0.38. This value, greater than N/Z, could indicate an isovector effect in the first 2{sup +} state excitation which could be due to a difference between the neutron and proton vibrations. The microscopic analysis gives the possibility to test the densities and the transition densities to the first 2{sup +} state. The calculated densities for the {sup 40}S nucleus show a neutron skin. However the microscopic analysis yields a M{sub n}/M{sub p} ratio of 1.40{+-}0.20. A similar elastic and inelastic proton scattering experiment allowed us to get a deformation parameter of 0.25{+-}0.03 for the {sup 43}Ar nucleus. To develop the study of direct reactions induced by radioactive beams at GANIL, we have developed and built, in collaboration with the CEA-Saclay and the CEA-Bruyeres, the new detector MUST.It is based on the silicon strip technology, and is dedicated to the measurement of recoiling light particles emitted in these reactions. The results obtained with a {sup 40}Ar beam at 77 Me V/A, have shown the good performances of the detector for the particle identification as well as for the resolutions, and allow us to consider now a large experimental programme concerning these direct

  6. Distribution of nuclear charge in the proton-induced fission of Th-232

    Energy Technology Data Exchange (ETDEWEB)

    Pate, B D [Brookhaven National Laboratory, Upton, New York (United States); Foster, J S; Yaffe, L [McGill Univ., Montreal, Quebec (Canada)

    1958-09-15

    A great deal of work has been done on the distribution of nuclear mass in the fission process. About the nuclear charge distribution less is known. Data exist on the distribution from the fission of U-235 with thermal neutrons and with 14 Mev neutrons. Data also exist for the fission of uranium by 170 Mev protons, of bismuth by 190 Mev deuterons, and of uranium, thorium and bismuth by 480 Mev protons, and there is fragmentary information from other systems. The present work was undertaken to investigate the changes that occur in the charge distribution from proton-induced fission of Th-232 as the bombarding energy is raised from 8 to 90 Mev, the maximum proton energy of the McGill synchrocyclotron. This energy range is of interest in view of the substantial changes observed in the mass distribution. Also in this interval a change presumably begins in the nature of the initial step in nuclear reactions, from simple compound-nucleus formation, to a mechanism of direct interaction with individual nucleons. Thus at the lower energies studied, excitation of the nuclei at the end of the first step of the reaction will be essentially monochromatic whereas at the higher end of the bombarding-energy range, a broad spectrum of excitation energies will be produced, with corresponding complexity of the reaction products observed. (author)

  7. Radiation modification and interaction mechanism of polypropylene and polyethylene by protons and electrons

    International Nuclear Information System (INIS)

    Wang Guanghou

    1988-10-01

    A systematic investigation of radiation effects on isotactic polypropylene (PP) and low-density polyethylene (PE) films by protons and electrons is reported. Electrons can make polyethylene cross-linked and polypropylene crached while protons can improve the PP mechanical properties and deteriorate polyethylene with increasing the irradiation dose. The structural analysis shows that conversion between α and β phases occurs and the crystallinity remains constant in the electron-irradiated polypropylene whereas the network structure is formed by allyl-type radicals in the e - -irradiated polyethylene. The infrared spectra indicate that conformational changes have taken place in the polypropylene under proton bombardment, such as the transition from an ordered to a disordered state in the crystalline region, the formation of double bonds as well as trans-conformations. This leads to the cross-linking between macromolecules of polypropylene at the proper irradiation doses, thus enhancing its mechanical properties. The cross-linking of polypropylene by proton bombardment observed and its properties may have some potential applications

  8. Friction and wear measurements of sputtered MoS/sub x/ films amorphized by ion bombardment

    International Nuclear Information System (INIS)

    Mikkelsen, N.J.; Chevallier, J.; Soerensen, G.; Straede, C.A.

    1988-01-01

    The present study presents an experimental evidence for amorphization of rf sputtered MoS/sub x/ films by ion bombardment. Even at low doses (3 x 10 15 ions/cm 2 ) of 400 keV argon ions a complete amorphization was confirmed by x-ray diffraction analysis and transmission electron microscopy. As a result of the ion bombardment the film density increased 100% to almost the bulk value for MoS 2 . The friction coefficient for ion beam amorphized MoS/sub x/ was measured to be 0.04 in agreement with the values reported for crystalline films but disagreeing considerably with the friction coefficient of 0.4 previously reported for amorphous films

  9. Films deposited from reactive sputtering of aluminum acetylacetonate under low energy ion bombardment

    Energy Technology Data Exchange (ETDEWEB)

    Battaglin, Felipe Augusto Darriba; Prado, Eduardo Silva; Cruz, Nilson Cristino da; Rangel, Elidiane Cipriano, E-mail: elidiane@sorocaba.unesp.br [Universidade Estadual Paulista Julio de Mesquita Filho (UNESP), Sorocaba, SP (Brazil). Lab. de Plasmas Tecnologicos; Caseli, Luciano [Universidade Federal de Sao Paulo (UNIFESP), Diadema, SP (Brazil). Instituto de Ciencias Ambientais, Quimicas e Farmaceuticas; Silva, Tiago Fiorini da; Tabacniks, Manfredo Harri [Universidade de Sao Paulo (USP), SP (Brazil). Instituto de Fisica

    2017-07-15

    Films were deposited from aluminum acetylacetonate (Al(acac)3 ) using a methodology involving reactive sputtering and low energy ion bombardment. The plasma was generated by the application of radiofrequency power to the powder containing electrode and simultaneously, negative pulses were supplied to the electrode where the substrates were attached. It was investigated the effect of the duty cycle of the pulses (Δ) on the properties of the coatings. Association of ion bombardment to the deposition process increased film thickness, structure reticulation and organic content. Ions from the deposition environment were implanted at the film-air interface or underneath it. Morphology and topography were altered depending on Δ. Considering the enhancement of Δ, it affected the flux of ions reaching the depositing interface and then the deposition rate, H content, crosslinking degree and surface microstructure. Alumina groups were detected in the infrared spectra, whereas the precipitation of amorphous alumina was confirmed by X-ray diffraction. (author)

  10. Low energy Ar ion bombardment damage of Si, GaAs, and InP surfaces

    International Nuclear Information System (INIS)

    Williams, R.S.

    1982-01-01

    Argon bombardment damage to (100) surfaces of Si, GaAs, and InP for sputter ion-gun potentials of 1, 2, and 3 kilovolts was studied using Rutherford backscattering. Initial damage rates and saturation damage levels were determined. Bombardment damage sensitivity increased for the sequence Si, GaAs, and InP. Saturation damage levels for Si and GaAs correspond reasonably to LSS projected range plus standard deviation estimates; damage to InP exceeded this level significantly. For an ion-gun potential of 3 keV, the initial sputter yield of P from an InP surface exceeded the sputter yield of In by four atoms per incident Ar projectile. (author)

  11. Composition and structure of ion-bombardment-induced growth cones on InP

    International Nuclear Information System (INIS)

    Malherbe, J.B.; Lakner, H.; Gries, W.H.

    1991-01-01

    The previously reported effect of low-energy (several keV) ion bombardment on the surface topography of InP was investigated by scanning transmission electron microscopy. Convergent beam electron diffraction patterns of the surface growth 'cones' induced by argon ion bombardment of (100) InP between 7 and 10 keV proved the cones to consist of crystalline InP (and not metallic indium, as has sometimes been claimed). The investigation showed that the irradiated surface region is not rendered completely amorphous but that it recrystallizes from the crystalline/amorphous interface in a columnar growth pattern, often terminating in growth cones protruding above the surface. Weak beam investigations revealed that the overwhelming majority of the cones have the orientation of the substrate. These phenomena were observed at all dose densities from 7 x 10 15 to 2 x 10 17 cm -2 . (author)

  12. Study on the growth of aligned carbon nanotubes controlled by ion bombardment

    International Nuclear Information System (INIS)

    Wang Biben; Zhang Bing; Zheng Kun; Hao Wei; Wang Wanlu; Liao Kejun

    2004-01-01

    Aligned carbon nanotubes were prepared by plasma-enhanced hot filament chemical vapor deposition using CH 4 , H 2 and NH 3 as reaction gases. It was investigated how different negative bias affects the growth of aligned carbon nanotubes. The results indicate that the average diameter of the aligned carbon nanotubes is reduced and the average length of the aligned carbon nanotubes is increased with increasing negative bias. Because of the occurrence of glow discharge, a cathode sheath forms near the substrate surface, and a number of ions are produced in it, and a very strong electrical field builds up near the substrate surface. Under the effect of the field, the strong bombardment of ions on the substrate surface will influence the growth of aligned carbon nanotubes. Combined with related theories, authors have analyzed and discussed the ion bombardment effects on the growth of the aligned carbon nanotudes

  13. The effect of incidence angle on ion bombardment induced surface topography development on single crystal copper

    International Nuclear Information System (INIS)

    Carter, G.; Nobes, M.J.; Lewis, G.W.; Whitton, J.L.

    1982-01-01

    The fluence dependence of development of microscopic surface features, particularly etch pits, during 9 keV Ar + ion bombardment of (11,3,1) oriented Cu single crystals has been studied employing quasi-dynamic irradiation and observation techniques in a scanning electron microscope-accelerator system. 9 keV ions are observed not to produce crystallographic pyramids under all irradiation conditions for this surface, a very different result from our earlier studies with higher energy ions. The bombardment does elaborate etch pits however, the habits and growth kinetics of which depend upon both polar and azimuthal angles of ion incidence to the surface. The results are explained in terms of differential erosion of crystal planes modified by the presence of pre-existing and irradiation induces extended defects. (orig.)

  14. Ion bombardment induced smoothing of amorphous metallic surfaces: Experiments versus computer simulations

    International Nuclear Information System (INIS)

    Vauth, Sebastian; Mayr, S. G.

    2008-01-01

    Smoothing of rough amorphous metallic surfaces by bombardment with heavy ions in the low keV regime is investigated by a combined experimental-simulational study. Vapor deposited rough amorphous Zr 65 Al 7.5 Cu 27.5 films are the basis for systematic in situ scanning tunneling microscopy measurements on the smoothing reaction due to 3 keV Kr + ion bombardment. The experimental results are directly compared to the predictions of a multiscale simulation approach, which incorporates stochastic rate equations of the Langevin type in combination with previously reported classical molecular dynamics simulations [Phys. Rev. B 75, 224107 (2007)] to model surface smoothing across length and time scales. The combined approach of experiments and simulations clearly corroborates a key role of ion induced viscous flow and ballistic effects in low keV heavy ion induced smoothing of amorphous metallic surfaces at ambient temperatures

  15. In-Situ atomic force microscopic observation of ion beam bombarded plant cell envelopes

    International Nuclear Information System (INIS)

    Sangyuenyongpipat, S.; Yu, L.D.; Brown, I.G.; Seprom, C.; Vilaithong, T.

    2007-01-01

    A program in ion beam bioengineering has been established at Chiang Mai University (CMU), Thailand, and ion beam induced transfer of plasmid DNA molecules into bacterial cells (Escherichia coli) has been demonstrated. However, a good understanding of the fundamental physical processes involved is lacking. In parallel work, onion skin cells have been bombarded with Ar + ions at energy 25 keV and fluence1-2 x 10 15 ions/cm 2 , revealing the formation of microcrater-like structures on the cell wall that could serve as channels for the transfer of large macromolecules into the cell interior. An in-situ atomic force microscope (AFM) system has been designed and installed in the CMU bio-implantation facility as a tool for the observation of these microcraters during ion beam bombardment. Here we describe some of the features of the in-situ AFM and outline some of the related work

  16. Investigation of the surface morphology of ion-bombarded biocompatible materials with a SEM and profilograph

    International Nuclear Information System (INIS)

    Kowalski, Z.W.

    1984-01-01

    The surface morphology (topography and roughness) is a very important factor which affects the response of biological tissue to an implant material. The effect of an incident ion beam on surface morphology of various biocompatible materials was studied. All materials were bombarded by Ar + ions at an applied voltage of 7 kV at various incident angles from 0 to 1.4 rad (0 to 80 deg) and at a beam current up to 0.1 mA. The surface topographies of ion-bombarded samples were examined with a Japan Electron Optics Laboratory, model JSM-35, scanning electron microscope. The roughness of the surface was calculated from the shape of a surface profile, which was recorded by a profilograph, the ME 10 (supplied by VEB Carl Zeiss, Jena). (author)

  17. Tuning the cathodoluminescence of porous silicon films

    International Nuclear Information System (INIS)

    Biaggi-Labiosa, A.; Fonseca, L.F.; Resto, O.; Balberg, I.

    2008-01-01

    We have obtained intense cathodoluminescence (CL) emission from electron beam modified porous silicon films by excitation with electrons with kinetic energies below 2 keV. Two types of CL emissions were observed, a stable one and a non-stable one. The first type is obtained in well-oxidized samples and is characterized by a spectral peak that is red shifted with respect to the photoluminescence (PL) peak. The physically interesting and technologically promising CL is however the CL that correlates closely with the PL. Tuning of this CL emission was achieved by controlling the average size of the nanostructure thus showing that the origin of this CL emission is associated with the quantum confinement and the surface chemistry effects that are known to exist in the porous silicon system. We also found that the electron bombardment causes microscale morphological modifications of the films, but the nanoscale features appear to be unchanged. The structural changes are manifested by the increase in the density of the nanoparticles which explains the significant enhancement of the PL that follows the electron irradiation

  18. Low surface damage dry etched black silicon

    Science.gov (United States)

    Plakhotnyuk, Maksym M.; Gaudig, Maria; Davidsen, Rasmus Schmidt; Lindhard, Jonas Michael; Hirsch, Jens; Lausch, Dominik; Schmidt, Michael Stenbæk; Stamate, Eugen; Hansen, Ole

    2017-10-01

    Black silicon (bSi) is promising for integration into silicon solar cell fabrication flow due to its excellent light trapping and low reflectance, and a continuously improving passivation. However, intensive ion bombardment during the reactive ion etching used to fabricate bSi induces surface damage that causes significant recombination. Here, we present a process optimization strategy for bSi, where surface damage is reduced and surface passivation is improved while excellent light trapping and low reflectance are maintained. We demonstrate that reduction of the capacitively coupled plasma power, during reactive ion etching at non-cryogenic temperature (-20 °C), preserves the reflectivity below 1% and improves the effective minority carrier lifetime due to reduced ion energy. We investigate the effect of the etching process on the surface morphology, light trapping, reflectance, transmittance, and effective lifetime of bSi. Additional surface passivation using atomic layer deposition of Al2O3 significantly improves the effective lifetime. For n-type wafers, the lifetime reaches 12 ms for polished and 7.5 ms for bSi surfaces. For p-type wafers, the lifetime reaches 800 μs for both polished and bSi surfaces.

  19. HCN Production via Impact Ejecta Reentry During the Late Heavy Bombardment

    Science.gov (United States)

    Parkos, Devon; Pikus, Aaron; Alexeenko, Alina; Melosh, H. Jay

    2018-04-01

    Major impact events have shaped the Earth as we know it. The Late Heavy Bombardment is of particular interest because it immediately precedes the first evidence of life. The reentry of impact ejecta creates numerous chemical by-products, including biotic precursors such as HCN. This work examines the production of HCN during the Late Heavy Bombardment in more detail. We stochastically simulate the range of impacts on the early Earth and use models developed from existing studies to predict the corresponding ejecta properties. Using multiphase flow methods and finite-rate equilibrium chemistry, we then find the HCN production due to the resulting atmospheric heating. We use Direct Simulation Monte Carlo to develop a correction factor to account for increased yields due to thermochemical nonequilibrium. We then model 1-D atmospheric turbulent diffusion to find the time accurate transport of HCN to lower altitudes and ultimately surface water. Existing works estimate the necessary HCN molarity threshold to promote polymerization that is 0.01 M. For a mixing depth of 100 m, we find that the Late Heavy Bombardment will produce at least one impact event above this threshold with probability 24.1% for an oxidized atmosphere and 56.3% for a partially reduced atmosphere. For a mixing depth of 10 m, the probability is 79.5% for an oxidized atmosphere and 96.9% for a partially reduced atmosphere. Therefore, Late Heavy Bombardment impact ejecta is likely an HCN source sufficient for polymerization in shallow bodies of water, particularly if the atmosphere were in a partially reduced state.

  20. Experiments on secondary ion emission with multicharged keV ion bombardement

    International Nuclear Information System (INIS)

    Della Negra, S.; Depauw, J.; Joret, H.; Le Beyec, Y.; Schweikert, E.A.

    1987-01-01

    An electron cyclotron resonance ion source was used to study the influence of the incident charge state of keV ions on secondary ion emission. The experiments were run with 18 keV Arn+ (1 < n < 11) beams produced by a minimafios source. Various types of targets were bombarded by the ion beam and the sputtered ionized species were identified by time of flight mass spectrometry. The experimental arrangement is detailed and preliminary results are indicated

  1. Phenomenology of the plastic flow of amorphous solids induced by heavy-ion bombardment

    International Nuclear Information System (INIS)

    Klaumuenzer, S.; Benyagoub, A.

    1991-01-01

    Amorphous solids exhibit at temperatures far below the glass transition plastic flow when bombarded with fast heavy ions (kinetic energy ∼1 MeV/u). The dimensions perpendicular to the ion beam grow whereas the sample dimension parallel to the ion beam shrinks. The strain tensor describing phenomenologically these dimensional changes is derived from symmetry considerations and compared with experiment. Particular attention is devoted to angular changes, which have not been discussed in this context so far

  2. Production of the Ne Auger electrons by Ne/sup +/ bombardment of Mg and Al surfaces

    Energy Technology Data Exchange (ETDEWEB)

    Ferrante, J; Pepper, S V [National Aeronautics and Space Administration, Cleveland, Ohio (USA). Lewis Research Center

    1976-07-01

    The authors have bombarded Mg and Al surfaces with Ne/sup +/ ions and in this letter present evidence for the production of an inner shell vacancy in the Ne by the asymmetric Ne-Mg and Ne-Al collision. In addition, autoionization states of neutral Ne have been observed. These states are to be distinguished from the more usual case in Auger electron spectroscopy of de-excitation of an ion with a core vacancy.

  3. Removal of foreign atoms from a metal surface bombarded with fast atomic particles

    Energy Technology Data Exchange (ETDEWEB)

    Dolotov, S.K.; Evstigneev, S.A.; Luk' yanov, S.Yu.; Martynenko, Yu.V.; Chicherov, V.M.

    1976-07-01

    A metal surface coated with foreign atoms was irradiated with periodically repeating ion current pulses. The energy of the ions bombarding the target was 20 to 30 keV, and inert gas ions were used. A study of the time dependences of the current of the dislodged foreign atoms showed that the rate of their removal from the target surface is determined by the sputtering coefficient of the substrate metal.

  4. Removal of foreign atoms from a metal surface bombarded with fast atomic particles

    International Nuclear Information System (INIS)

    Dolotov, S.K.; Evstigneev, S.A.; Luk'yanov, S.Yu.; Martynenko, Yu.V.; Chicherov, V.M.

    A metal surface coated with foreign atoms was irradiated with periodically repeating ion current pulses. The energy of the ions bombarding the target was 20 to 30 keV, and inert gas ions were used. A study of the time dependences of the current of the dislodged foreign atoms showed that the rate of their removal from the target surface is determined by the sputtering coefficient of the substrate metal

  5. Titanium oxidation-reduction at low oxygen pressure under electron bombardment

    International Nuclear Information System (INIS)

    Brasca, R.; Passeggi, M.C.G.; Ferron, J.

    2006-01-01

    The effect of the electron bombardment on the first stages of the titanium oxidation process has been studied by means of Auger Electron Spectroscopy. Using Factor Analysis and the valence electron dependence behaviour of the titanium LMV Auger transition, we found that the process is strongly dependent on the oxygen pressure and electron current density. Depending on the irradiation conditions, films of different thickness and Ti oxidized states are obtained

  6. Polymerization of solid C60 under C60 cluster ion bombardment

    Czech Academy of Sciences Publication Activity Database

    Lavrentiev, Vasyl; Vacík, Jiří; Naramoto, H.; Narumi, K.

    2009-01-01

    Roč. 95, - (2009), s. 867-873 ISSN 0947-8396 R&D Projects: GA AV ČR(CZ) KAN400480701; GA MŠk(CZ) LC06041 Institutional research plan: CEZ:AV0Z10480505 Keywords : fulleren * cluster * bombardment * polymerization Subject RIV: BG - Nuclear, Atomic and Molecular Physics, Colliders Impact factor: 1.595, year: 2009 http://www.springerlink.com/content/0947-8396

  7. Effects of uranium bombardment by 20-40 KeV argon ions, Annex 2

    International Nuclear Information System (INIS)

    Nenadovic, T.; Jurela, Z.

    1966-01-01

    This paper shows the results of argon ions interaction with the polycrystal natural uranium. Thin foil of uranium about 200 μ was bombarded by 20-40 KeV argon ions. Coefficients of cathode scattering δ and secondary electrons emission γ were measured, during the process A + →U. The foil was then studied by transmission method and method of single step replica using an electron microscope [sr

  8. Proton capture reactions and nuclear structure

    International Nuclear Information System (INIS)

    Kikstra, S.W.

    1989-01-01

    Experimental studies are described of the structure of 40 Ca and 42 Sc with measurements at proton-capture of (p, gamma) reactions. Where possible, an attempt has been made to interpret the results of the measurements in termsof existing models. The 40 Ca and 42 Sc nuclides were excited by bombarding 39 K and 41 Ca targets, respectively with low energy protons (E p = 0.3-3.0 MeV), that were produced by the Utrecht 3MV van de Graaff accelerator. From the measured energy and intensity of the gamma-rays created in the subsequent decay of the cuclei, information was obtained on the existence and properties of their excited states. In addition properties of two T = 3/2 levels at high excitation energy of the 9 Be nucleus were investigated. These levels were excited by the resonant absorption of gamma-rays from the 11 B(p, gamma) 12 C reaction. The results of the measurements are interpreted by a comparison to the analoque β-decay of 9 Li and to shell model calculations. The total decay energy of the superallowed O + → O + transition between the ground states of 42 Sc and 42 Ca was determined by measurements in Utrecht of the proton separation energy S p of 42 Sc and in Oak Ridge of S n of 42 Sc and 42 Ca. The results were used for verification of the conserved vector current hypothesis, which implies that the ft values of all superallowed O + → O + β-decays are the same. An attempt was made to describe properties of odd-parity states of A = 37-41 nuclei with a variant of the Warburton, Becker, Millener and Brown (WBMB) interaction.Finally a new method for the assignment of nuclear spins by a simple statistical analysis of spectroscopic information is proposed. (author). 169 refs.; 22 figs.; 24 schemes; 29 tabs

  9. Spatial variation in void volume during charged particle bombardment: the effects of injected interstitials

    International Nuclear Information System (INIS)

    Lee, E.H.; Mansur, L.K.; Yoo, M.H.

    1979-01-01

    Experimental observations of the void volume at several depths along the range of 4 MeV Ni ions in 316 stainless steel are reported. The specimens were first preconditioned by neutron irradiation at temperatures of 450 and 584 0 C to fluences of approximately 8 x 10 26 n/m -2 . The void volume after ion bombardment to 60 dpa at the peak damage depth is significantly lower at the peak damage depth than in the region between that and the free surface. The ratio of the step height to void volume at the depth of peak energy deposition between regions masked from and exposed to the beam is strongly dependent on bombardment temperature. The reduction of void volume near the peak damage depth is larger for the 584 0 C than for the 450 0 C preconditioned material. These observations are consistent with recent theoretical results which account for the injection of the bombarding ions as self-interstitials. The theory necessary to understand the effect is developed

  10. Engineering catalytic activity via ion beam bombardment of catalyst supports for vertically aligned carbon nanotube growth

    Science.gov (United States)

    Islam, A. E.; Nikolaev, P.; Amama, P. B.; Zakharov, D.; Sargent, G.; Saber, S.; Huffman, D.; Erford, M.; Semiatin, S. L.; Stach, E. A.; Maruyama, B.

    2015-09-01

    Carbon nanotube growth depends on the catalytic activity of metal nanoparticles on alumina or silica supports. The control on catalytic activity is generally achieved by variations in water concentration, carbon feed, and sample placement on a few types of alumina or silica catalyst supports obtained via thin film deposition. We have recently expanded the choice of catalyst supports by engineering inactive substrates like c-cut sapphire via ion beam bombardment. The deterministic control on the structure and chemistry of catalyst supports obtained by tuning the degree of beam-induced damage have enabled better regulation of the activity of Fe catalysts only in the ion beam bombarded areas and hence enabled controllable super growth of carbon nanotubes. A wide range of surface characterization techniques were used to monitor the catalytically active surface engineered via ion beam bombardment. The proposed method offers a versatile way to control carbon nanotube growth in patterned areas and also enhances the current understanding of the growth process. With the right choice of water concentration, carbon feed and sample placement, engineered catalyst supports may extend the carbon nanotube growth yield to a level that is even higher than the ones reported here, and thus offers promising applications of carbon nanotubes in electronics, heat exchanger, and energy storage.

  11. Deuterium pumping and erosion behavior of selected graphite materials under high flux plasma bombardment in PISCES

    International Nuclear Information System (INIS)

    Hirooka, Y.; Conn, R.W.; Goebel, D.M.; LaBombard, B.; Lehmer, R.; Leung, W.K.; Nygren, R.E.; Ra, Y.

    1988-06-01

    Deuterium plasma recycling and chemical erosion behavior of selected graphite materials have been investigated using the PISCES-A facility. These materials include: Pyro-graphite; 2D-graphite weave; 4D-graphite weave; and POCO-graphite. Deuterium plasma bombardment conditions are: fluxes around 7 /times/ 10 17 ions s/sup /minus/1/cm/sup /minus/2/; exposure time in the range from 10 to 100 s; bombarding energy of 300 eV; and graphite temperatures between 20 and 120/degree/C. To reduce deuterium plasma recycling, several approaches have been investigated. Erosion due to high-fluence helium plasma conditioning significantly increases the surface porosity of POCO-graphite and 4D-graphite weave whereas little change for 2D-graphite weave and Pyro-graphite. The increased pore openings and refreshed in-pore surface sites are found to reduce the deuterium plasma recycling and chemical erosion rates at transient stages. The steady state recycling rates for these graphite materials can be also correlated to the surface porosity. Surface topographical modification by machined-grooves noticeably reduces the steady state deuterium recycling rate and the impurity emission from the surface. These surface topography effects are attributed to co-deposition of remitted deuterium, chemically sputtered hydrocarbon and physically sputtered carbon under deuterium plasma bombardment. The co-deposited film is found to have a characteristic surface morphology with dendritic microstructures. 18 ref., 4 figs., 1 tab

  12. Formation of a highly doped ultra-thin amorphous carbon layer by ion bombardment of graphene

    Science.gov (United States)

    Piotr Michałowski, Paweł; Pasternak, Iwona; Ciepielewski, Paweł; Guinea, Francisco; Strupiński, Włodek

    2018-07-01

    Ion bombardment of graphene leads to the formation of defects which may be used to tune properties of the graphene based devices. In this work, however, we present that the presence of the graphene layer on a surface of a sample has a significant impact on the ion bombardment process: broken sp2 bonds react with the incoming ions and trap them close to the surface of the sample, preventing a standard ion implantation. For an ion bombardment with a low impact energy and significant dose (in the range of 1014 atoms cm‑2) an amorphization of the graphene layer is observed but at the same time, most of the incoming ions do not penetrate the sample but stop at the surface, thus forming a highly doped ultra-thin amorphous carbon layer. The effect may be used to create thin layers containing desired atoms if no other technique is available. This approach is particularly useful for secondary ion mass spectrometry where a high concentration of Cs at the surface of a sample significantly enhances the negative ionization probability, allowing it to reach better detection limits.

  13. Calculations on displacement damage and its related parameters for heavy ion bombardment in reactor materials

    International Nuclear Information System (INIS)

    Sone, Kazuho; Shiraishi, Kensuke

    1975-04-01

    The depth distribution of displacement damage expressed in displacements per atom (DPA) in reactor materials such as Mo, Nb, V, Fe and Ni bombarded by energetic nitrogen, argon and self ions with incident energy below 2 MeV was calculated following the theory developed by Lindhard and co-workers for the partition of energy as an energetic ion slowing down. In this calculation, energy loss due to electron excitation was taken into account for the atomic collision cascade after the primary knock-on process. Some parameters indispensable for the calculation such as energy loss rate, damage efficiency, projected range and its straggling were tabulated as a function of incident ion energy of 20 keV to 2 MeV. The damage and parameters were also calculated for 2 MeV nickel ions bombarding Fe targets. In this case, the DPA value is of 40--75% overestimated in a calculation disregarding electronic energy loss for primary knock-on atoms. The formula proposed in this report is significant for calculations on displacement damage produced by heavy ion bombardment as a simulation of high fluence fast neutron damage. (auth.)

  14. Calculations on displacement damage and its related parameters for heavy ion bombardment in reactor materials

    Energy Technology Data Exchange (ETDEWEB)

    Sone, K; Shiraishi, K

    1975-04-01

    The depth distribution of displacement damage expressed in displacements per atom (DPA) in reactor materials such as Mo, Nb, V, Fe and Ni bombarded by energetic nitrogen, argon and self ions with incident energy below 2 MeV was calculated following the theory developed by Lindhard and co-workers for the partition of energy as an energetic ion slowing down. In this calculation, energy loss due to electron excitation was taken into account for the atomic collision cascade after the primary knock-on process. Some parameters indispensable for the calculation such as energy loss rate, damage efficiency, projected range and its straggling were tabulated as a function of incident ion energy of 20 keV to 2 MeV. The damage and parameters were also calculated for 2 MeV nickel ions bombarding Fe targets. In this case, the DPA value is of 40--75% overestimated in a calculation disregarding electronic energy loss for primary knock-on atoms. The formula proposed in this report is significant for calculations on displacement damage produced by heavy ion bombardment as a simulation of high fluence fast neutron damage.

  15. Structural and magnetic properties of ion-beam bombarded Co/Pt multilayers

    Energy Technology Data Exchange (ETDEWEB)

    Lin, K.W.; Guo, J.Y.; Lin, S.R.; Ouyang, H. [Department of Materials Science and Engineering, National Chung Hsing University, Taichung 402 (China); Tsai, C.J. [Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 300 (China); Van Lierop, J. [Department of Physics and Astronomy, University of Manitoba, Winnipeg (Canada); Phuoc, N.N.; Suzuki, T. [Information Storage Materials Laboratory, Toyota Technological Institute, Nagoya 468-8511 (Japan)

    2007-12-15

    A series of [Pt(2 nm)/Co(2 nm)]{sub 10}/Pt(30 nm) multilayers were deposited by using an ion-beam technique. X-ray diffraction and transmission electron microscopy results have shown that as-deposited samples consist of h.c.p. Co and f.c.c. Pt phases. Disordered CoPt{sub 3} phases were developed with increasing End-Hall voltage (V{sub EH}) that induces greater ion-beam bombardment energy during deposition. This indicates that intermixing of Co and Pt increases with ion-beam bombardment. The coercivities (ranging from 100 Oe to 300 Oe) of Co/Pt multilayers decreased with increasing V{sub EH}. After annealing, the formation of CoPt{sub 3} was observed in these ion-beam bombarded samples, resulting in lower coercivities (H{sub c}{proportional_to} 50 Oe). The depressed transition temperature of CoPt{sub 3} for films deposited with the largest V{sub EH} was attributed to distorted CoPt{sub 3} structures that appeared with annealing. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  16. Optoelectronic properties of Black-Silicon generated through inductively coupled plasma (ICP) processing for crystalline silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Hirsch, Jens, E-mail: J.Hirsch@emw.hs-anhalt.de [Anhalt University of Applied Sciences, Faculty EMW, Bernburger Str. 55, DE-06366 Köthen (Germany); Fraunhofer Center for Silicon Photovoltaics CSP, Otto-Eißfeldt-Str. 12, DE-06120 Halle (Saale) (Germany); Gaudig, Maria; Bernhard, Norbert [Anhalt University of Applied Sciences, Faculty EMW, Bernburger Str. 55, DE-06366 Köthen (Germany); Lausch, Dominik [Fraunhofer Center for Silicon Photovoltaics CSP, Otto-Eißfeldt-Str. 12, DE-06120 Halle (Saale) (Germany)

    2016-06-30

    Highlights: • Fabrication of black silicon through inductively coupled plasma (ICP) processing. • Suppressed formation a self-bias and therefore a reduced ion bombardment of the silicon sample. • Reduction of the average hemispherical reflection between 300 and 1120 nm up to 8% within 5 min ICP process time. • Reflection is almost independent of the angle of incidence up to 60°. • 2.5 ms effective lifetime at 10{sup 15} cm{sup −3} MCD after ALD Al{sub 2}O{sub 3} surface passivation. - Abstract: The optoelectronic properties of maskless inductively coupled plasma (ICP) generated black silicon through SF{sub 6} and O{sub 2} are analyzed by using reflection measurements, scanning electron microscopy (SEM) and quasi steady state photoconductivity (QSSPC). The results are discussed and compared to capacitively coupled plasma (CCP) and industrial standard wet chemical textures. The ICP process forms parabolic like surface structures in a scale of 500 nm. This surface structure reduces the average hemispherical reflection between 300 and 1120 nm up to 8%. Additionally, the ICP texture shows a weak increase of the hemispherical reflection under tilted angles of incidence up to 60°. Furthermore, we report that the ICP process is independent of the crystal orientation and the surface roughness. This allows the texturing of monocrystalline, multicrystalline and kerf-less wafers using the same parameter set. The ICP generation of black silicon does not apply a self-bias on the silicon sample. Therefore, the silicon sample is exposed to a reduced ion bombardment, which reduces the plasma induced surface damage. This leads to an enhancement of the effective charge carrier lifetime up to 2.5 ms at 10{sup 15} cm{sup −3} minority carrier density (MCD) after an atomic layer deposition (ALD) with Al{sub 2}O{sub 3}. Since excellent etch results were obtained already after 4 min process time, we conclude that the ICP generation of black silicon is a promising technique

  17. Shielding measurements for a 230 MeV proton beam

    International Nuclear Information System (INIS)

    Siebers, J.V.

    1990-01-01

    Energetic secondary neutrons produced as protons interact with accelerator components and patients dominate the radiation shielding environment for proton radiotherapy facilities. Due to the scarcity of data describing neutron production, attenuation, absorbed dose, and dose equivalent values, these parameters were measured for 230 MeV proton bombardment of stopping length Al, Fe, and Pb targets at emission angles of 0 degree, 22 degree, 45 degree, and 90 degree in a thick concrete shield. Low pressure tissue-equivalent proportional counters with volumes ranging from 1 cm 3 to 1000 cm 3 were used to obtain microdosimetric spectra from which absorbed dose and radiation quality are deduced. Does equivalent values and attenuation lengths determined at depth in the shield were found to vary sharply with angle, but were found to be independent of target material. Neutron dose and radiation length values are compared with Monte Carlo neutron transport calculations performed using the Los Alamos High Energy Transport Code (LAHET). Calculations used 230 MeV protons incident upon an Fe target in a shielding geometry similar to that used in the experiment. LAHET calculations overestimated measured attenuation values at 0 degree, 22 degree, and 45 degree, yet correctly predicted the attenuation length at 90 degree. Comparison of the mean radiation quality estimated with the Monte Carlo calculations with measurements suggest that neutron quality factors should be increased by a factor of 1.4. These results are useful for the shielding design of new facilities as well as for testing neutron production and transport calculations

  18. Spherical proton emitters

    International Nuclear Information System (INIS)

    Berg, S.; Semmes, P.B.; Nazarewicz, W.

    1997-01-01

    Various theoretical approaches to proton emission from spherical nuclei are investigated, and it is found that all the methods employed give very similar results. The calculated decay widths are found to be qualitatively insensitive to the parameters of the proton-nucleus potential, i.e., changing the potential parameters over a fairly large range typically changes the decay width by no more than a factor of ∼3. Proton half-lives of observed heavy proton emitters are, in general, well reproduced by spherical calculations with the spectroscopic factors calculated in the independent quasiparticle approximation. The quantitative agreement with experimental data obtained in our study requires that the parameters of the proton-nucleus potential be chosen carefully. It also suggests that deformed proton emitters will provide invaluable spectroscopic information on the angular momentum decomposition of single-proton orbitals in deformed nuclei. copyright 1997 The American Physical Society

  19. Proton therapy physics

    CERN Document Server

    2012-01-01

    Proton Therapy Physics goes beyond current books on proton therapy to provide an in-depth overview of the physics aspects of this radiation therapy modality, eliminating the need to dig through information scattered in the medical physics literature. After tracing the history of proton therapy, the book summarizes the atomic and nuclear physics background necessary for understanding proton interactions with tissue. It describes the physics of proton accelerators, the parameters of clinical proton beams, and the mechanisms to generate a conformal dose distribution in a patient. The text then covers detector systems and measuring techniques for reference dosimetry, outlines basic quality assurance and commissioning guidelines, and gives examples of Monte Carlo simulations in proton therapy. The book moves on to discussions of treatment planning for single- and multiple-field uniform doses, dose calculation concepts and algorithms, and precision and uncertainties for nonmoving and moving targets. It also exami...

  20. Microscopic description of isobaric-analog-state transitions induced by 25-, 35-, and 45-MeV protons

    International Nuclear Information System (INIS)

    Doering, R.R.; Patterson, D.M.; Galonsky, A.

    1975-01-01

    Differential cross sections have been measured for (p, n) reactions to the isobaric analogs of the targets 48 Ca, 90 Zr, 120 Sn, and 208 Pb at proton bombarding energies of 25, 35, and 45 MeV. The isospin-flip strength of a phenomenological nucleon-nucleon force has been determined with microscopic distorted-wave calculations including the ''knockon'' exchange amplitude. A realistic G-matrix effective interaction also provides a reasonable account of the observed cross sections, particularly at the higher proton energies

  1. Atomic Number Dependence of Hadron Production at Large Transverse Momentum in 300 GeV Proton--Nucleus Collisions

    Science.gov (United States)

    Cronin, J. W.; Frisch, H. J.; Shochet, M. J.; Boymond, J. P.; Mermod, R.; Piroue, P. A.; Sumner, R. L.

    1974-07-15

    In an experiment at the Fermi National Accelerator Laboratory we have compared the production of large transverse momentum hadrons from targets of W, Ti, and Be bombarded by 300 GeV protons. The hadron yields were measured at 90 degrees in the proton-nucleon c.m. system with a magnetic spectrometer equipped with 2 Cerenkov counters and a hadron calorimeter. The production cross-sections have a dependence on the atomic number A that grows with P{sub 1}, eventually leveling off proportional to A{sup 1.1}.

  2. Proton solvation and proton transfer in chemical and electrochemical processes

    International Nuclear Information System (INIS)

    Lengyel, S.; Conway, B.E.

    1983-01-01

    This chapter examines the proton solvation and characterization of the H 3 O + ion, proton transfer in chemical ionization processes in solution, continuous proton transfer in conductance processes, and proton transfer in electrode processes. Topics considered include the condition of the proton in solution, the molecular structure of the H 3 O + ion, thermodynamics of proton solvation, overall hydration energy of the proton, hydration of H 3 O + , deuteron solvation, partial molal entropy and volume and the entropy of proton hydration, proton solvation in alcoholic solutions, analogies to electrons in semiconductors, continuous proton transfer in conductance, definition and phenomenology of the unusual mobility of the proton in solution, solvent structure changes in relation to anomalous proton mobility, the kinetics of the proton-transfer event, theories of abnormal proton conductance, and the general theory of the contribution of transfer reactions to overall transport processes

  3. Confirming the key role of Ar+ ion bombardment in the growth feature of nanostructured carbon materials by PECVD.

    Science.gov (United States)

    Liu, Yulin; Lin, Jinghuang; Jia, Henan; Chen, Shulin; Qi, Junlei; Qu, Chaoqun; Cao, Jian; Feng, Jicai; Fei, Weidong

    2017-11-24

    In order to confirm the key role of Ar + ion bombardment in the growth feature of nanostructured carbon materials (NCMs), here we report a novel strategy to create different Ar + ion states in situ in plasma enhanced chemical vapor deposition (PECVD) by separating catalyst film from the substrate. Different bombardment environments on either side of the catalyst film were created simultaneously to achieve multi-layered structural NCMs. Results showed that Ar + ion bombardment is crucial and complex for the growth of NCMs. Firstly, Ar + ion bombardment has both positive and negative effects on carbon nanotubes (CNTs). On one hand, Ar + ions can break up the graphic structure of CNTs and suppress thin CNT nucleation and growth. On the other hand, Ar + ion bombardment can remove redundant carbon layers on the surface of large catalyst particles which is essential for thick CNTs. As a result, the diameter of the CNTs depends on the Ar + ion state. As for vertically oriented few-layer graphene (VFG), Ar + ions are essential and can even convert the CNTs into VFG. Therefore, by combining with the catalyst separation method, specific or multi-layered structural NCMs can be obtained by PECVD only by changing the intensity of Ar + ion bombardment, and these special NCMs are promising in many fields.

  4. Confirming the key role of Ar+ ion bombardment in the growth feature of nanostructured carbon materials by PECVD

    Science.gov (United States)

    Liu, Yulin; Lin, Jinghuang; Jia, Henan; Chen, Shulin; Qi, Junlei; Qu, Chaoqun; Cao, Jian; Feng, Jicai; Fei, Weidong

    2017-11-01

    In order to confirm the key role of Ar+ ion bombardment in the growth feature of nanostructured carbon materials (NCMs), here we report a novel strategy to create different Ar+ ion states in situ in plasma enhanced chemical vapor deposition (PECVD) by separating catalyst film from the substrate. Different bombardment environments on either side of the catalyst film were created simultaneously to achieve multi-layered structural NCMs. Results showed that Ar+ ion bombardment is crucial and complex for the growth of NCMs. Firstly, Ar+ ion bombardment has both positive and negative effects on carbon nanotubes (CNTs). On one hand, Ar+ ions can break up the graphic structure of CNTs and suppress thin CNT nucleation and growth. On the other hand, Ar+ ion bombardment can remove redundant carbon layers on the surface of large catalyst particles which is essential for thick CNTs. As a result, the diameter of the CNTs depends on the Ar+ ion state. As for vertically oriented few-layer graphene (VFG), Ar+ ions are essential and can even convert the CNTs into VFG. Therefore, by combining with the catalyst separation method, specific or multi-layered structural NCMs can be obtained by PECVD only by changing the intensity of Ar+ ion bombardment, and these special NCMs are promising in many fields.

  5. Nanostructured Porous Silicon Photonic Crystal for Applications in the Infrared

    Directory of Open Access Journals (Sweden)

    G. Recio-Sánchez

    2012-01-01

    Full Text Available In the last decades great interest has been devoted to photonic crystals aiming at the creation of novel devices which can control light propagation. In the present work, two-dimensional (2D and three-dimensional (3D devices based on nanostructured porous silicon have been fabricated. 2D devices consist of a square mesh of 2 μm wide porous silicon veins, leaving 5×5 μm square air holes. 3D structures share the same design although multilayer porous silicon veins are used instead, providing an additional degree of modulation. These devices are fabricated from porous silicon single layers (for 2D structures or multilayers (for 3D structures, opening air holes in them by means of 1 KeV argon ion bombardment through the appropriate copper grids. For 2D structures, a complete photonic band gap for TE polarization is found in the thermal infrared range. For 3D structures, there are no complete band gaps, although several new partial gaps do exist in different high-symmetry directions. The simulation results suggest that these structures are very promising candidates for the development of low-cost photonic devices for their use in the thermal infrared range.

  6. 3D Silicon Tracker for AFP - From Qualification to Operation

    CERN Document Server

    F\\"orster, Fabian Alexander; The ATLAS collaboration

    2017-01-01

    The ATLAS Forward Proton (AFP) experiment is a detector located ~210 m away from the ATLAS interaction point on both sides. Its aim is to tag and measure forward protons produced in diffractive events. The detector consists of a 3D silicon pixel tracker, to measure the proton trajectory, as well as a time-of-flight system to suppress pileup-related backgrounds. Each tracker and the ToF system are placed inside a Roman Pot, allowing operation in the vicinity of the LHC beam, up to 2-3 mm. AFP was installed in 2 stages during the LHC technical shutdowns of 2015-2016 and 2016-2017. This presentation will give an overview of the silicon sensor qualification as well as the production, assembly and quality assurance of the tracker modules. The installation, commissioning and operation of the full detector will also be discussed.

  7. Modeling the electron-proton telescope on Solar Orbiter

    Energy Technology Data Exchange (ETDEWEB)

    Boden, Sebastian; Steinhagen, Jan; Kulkarni, S.R.; Tammen, Jan; Elftmann, Robert; Martin, Cesar; Ravanbakhsh, Ali; Boettcher, Stephan; Seimetz, Lars; Wimmer-Schweingruber, Robert F. [Christian-Albrechts-Universitaet, Kiel (Germany)

    2014-07-01

    The Electron Proton Telescope (EPT) is one of four sensors in the Energetic Particle Detector suite for Solar Orbiter. It investigates low energy electrons and protons of solar events in an energy range from 20 - 400 keV for electrons and 20 keV - 7 MeV for protons. It distinguishes electrons from protons using a magnet/foil technique with silicon detectors. There will be two EPT units, each with double-barreled telescopes, one looking sunwards/antisunwards and the other north/south. We set up a Monte Carlo model of EPT using the GEANT4 framework, which we can use to simulate interactions of energetic particles in the sensor. Here we present simulation results of the energy coverage for different ion species, and we study how it is possible to distinguish between them.

  8. Silicon: electrochemistry and luminescence

    NARCIS (Netherlands)

    Kooij, Ernst Stefan

    1997-01-01

    The electrochemistry of crystalline and porous silicon and the luminescence from porous silicon has been studied. One chapter deals with a model for the anodic dissolution of silicon in HF solution. In following chapters both the electrochemistry and various ways of generating visible

  9. Proton-Proton and Proton-Antiproton Colliders

    CERN Document Server

    Scandale, Walter

    2014-01-01

    In the last five decades, proton–proton and proton–antiproton colliders have been the most powerful tools for high energy physics investigations. They have also deeply catalyzed innovation in accelerator physics and technology. Among the large number of proposed colliders, only four have really succeeded in becoming operational: the ISR, the SppbarS, the Tevatron and the LHC. Another hadron collider, RHIC, originally conceived for ion–ion collisions, has also been operated part-time with polarized protons. Although a vast literature documenting them is available, this paper is intended to provide a quick synthesis of their main features and key performance.

  10. Using MDECR-PECVD to study the impact of ion bombardment energy on microstructural properties of μc-Si:H thin film grown from an SiF{sub 4}/H{sub 2} chemistry

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Junkang; Florea, Ileana; Bulkin, Pavel V.; Maurice, Jean-Luc; Johnson, Erik V. [LPICM, CNRS, Ecole Polytechnique, Universite Paris Saclay, 91128 Palaiseau (France)

    2016-12-15

    The matrix-distributed electron cyclotron resonance plasma-enhanced chemical vapor deposition (MDECR-PECVD) technique has been shown to achieve high deposition rates for hydrogenated microcrystalline silicon (μc-Si:H) thin film. Due to the fact that plasma is sustained by a microwave discharge, by biasing the substrate holder with additional power supply, one can achieve independent control over the plasma density and the maximum ion bombardment energy (IBE). In this work, we present studies of the impact of IBE on the microstructural properties of the μc-Si:H film deposited by MDECR-PECVD. Insufficient ion bombardment is found to be responsible for the substantial presence of nano-porous regions within the material, resulting in significant post-deposition oxidation. Good agreement between transmission electron microscopy (TEM) Fresnel contrast analysis and the results of infrared absorption and hydrogen effusion measurements for the deposited films suggest that moderate IBE is of vital importance to achieve high quality μc-Si:H. In doing so, denser films with significantly decreased nano-porous regions and better stability are obtained, which is of great interest to optimize the process parameters for solar cell applications. (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  11. Studying the destruction of various fluoropolymers caused by gamma - irradiation and MeV protons

    International Nuclear Information System (INIS)

    Allayarov, S.R.; Ol'khov, Yu.A.; Gordon, D.A.; Muntele, C.I.; Muntele, I.C.; Ila, D.; Dixon, D.A.; Kispert, L.D.; Nikolskij, V.G.

    2007-01-01

    While fluoropolymers are normally used as anti-adherent coating, they are intensely investigated for potential use in various radiation dosimeter applications as well as space technology. In order to understand the discrepancy between high chemical and thermal stability and low radiation stability of various fluoropolymers, we are bombarding them with 1 MeV protons to fluences up to 2·10 15 protons/cm 2 as well as subjected some of them to gamma-irradiation by dose of 10 kGy. During bombardment we are monitoring the emission of chemical species with a residual gas analyzer. Gamma-irradiated samples were tested by radio thermoluminescence method. The results we present here are a good indicator that material damage happens much earlier than 2·10 15 protons/cm 2 and that further work should be addressed at much smaller exposures. Radio thermoluminescence also can be used at small doses of irradiation (10-30 kGy). The thermomechanical curve of radiation-free polyvinyledenefluoride (PVDF) is characteristic for topologically di-block amorphous polymer of quasi-crossing structure. In the temperature range of from 173 K up to 228 K polymer is vitrified. The vitrification temperature of PVDF is 228 K. All molecular-relaxation and quantitative characteristics of PVDF were determined before and after its irradiation by protons. Protons caused significant changes in PVDF. From di-block amorphous it transformed in to amorphous-crystalline structure. An appreciable influence of dose at proton irradiation of polymer was revealed both on topological level and on molecular-relaxation one. (authors)

  12. Nanoconstructive bombardment

    Energy Technology Data Exchange (ETDEWEB)

    Gordon, J [VSW Ion Beam Systems, Warrington (UK)

    1990-06-01

    Ion beams with energies as low as a few eV can be used, in the very clean environment of an ultra-high vacuum system, to achieve the fine control for atomic-scale experiments. They are becoming widely used in nanotechnology. Recent advances in beam quality, overcoming the mutual repulsion of the ions, have meant that mass-analysed low energy ion beams have been developed around the world for a variety of applications in material science, and physics. The structure of such devices is outlined and possible future applications noted. (U.K.).

  13. Proton Fast Ignition

    International Nuclear Information System (INIS)

    Key, M H; Freeman, R R; Hatchett, S P; MacKinnon, A J; Patel, P K; Snavely, R A; Stephens, R B

    2006-04-01

    Fast ignition (FI) by a laser generated ballistically focused proton beam is a more recently proposed alternative to the original concept of FI by a laser generated beam of relativistic electrons. It has potential advantages in less complex energy transport into dense plasma. Recent successful target heating experiments motivate further investigation of the feasibility of proton fast ignition. The concept, the physics and characteristics of the proton beams, the recent experimental work on focusing of the beams and heating of solid targets and the overall prospects for proton FI are discussed

  14. Silicon heterojunction transistor

    International Nuclear Information System (INIS)

    Matsushita, T.; Oh-uchi, N.; Hayashi, H.; Yamoto, H.

    1979-01-01

    SIPOS (Semi-insulating polycrystalline silicon) which is used as a surface passivation layer for highly reliable silicon devices constitutes a good heterojunction for silicon. P- or B-doped SIPOS has been used as the emitter material of a heterojunction transistor with the base and collector of silicon. An npn SIPOS-Si heterojunction transistor showing 50 times the current gain of an npn silicon homojunction transistor has been realized by high-temperature treatments in nitrogen and low-temperature annealing in hydrogen or forming gas

  15. The chemistry of silicon

    CERN Document Server

    Rochow, E G; Emeléus, H J; Nyholm, Ronald

    1975-01-01

    Pergamon Texts in Organic Chemistry, Volume 9: The Chemistry of Silicon presents information essential in understanding the chemical properties of silicon. The book first covers the fundamental aspects of silicon, such as its nuclear, physical, and chemical properties. The text also details the history of silicon, its occurrence and distribution, and applications. Next, the selection enumerates the compounds and complexes of silicon, along with organosilicon compounds. The text will be of great interest to chemists and chemical engineers. Other researchers working on research study involving s

  16. Silicon Microspheres Photonics

    International Nuclear Information System (INIS)

    Serpenguzel, A.

    2008-01-01

    Electrophotonic integrated circuits (EPICs), or alternatively, optoelectronic integrated circuit (OEICs) are the natural evolution of the microelectronic integrated circuit (IC) with the addition of photonic capabilities. Traditionally, the IC industry has been based on group IV silicon, whereas the photonics industry on group III-V semiconductors. However, silicon based photonic microdevices have been making strands in siliconizing photonics. Silicon microspheres with their high quality factor whispering gallery modes (WGMs), are ideal candidates for wavelength division multiplexing (WDM) applications in the standard near-infrared communication bands. In this work, we will discuss the possibility of using silicon microspheres for photonics applications in the near-infrared

  17. Using the Geminids to Characterize the Surface Response of an Airless Body to Meteoroid Bombardment

    Science.gov (United States)

    Szalay, J.; Pokorny, P.; Jenniskens, P. M. M.; Horanyi, M.

    2017-12-01

    All airless bodies in the solar system are exposed to the continual bombardment by interplanetary meteoroids. These impacts can eject orders of magnitude more mass than the primary impactors, sustaining bound and/or unbound ejecta clouds that vary both spatially and temporally from changes in impactor fluxes. The dust environment in the vicinity of an airless body provides both a scientific resource and a hazard for exploration. Characterizing the spatial and temporal variability of the dust environment of airless planetary bodies provides a novel way to understand their meteoroid environment by effectively using these objects as large surface area meteoroid detectors. Additionally, were a dust detector with chemical sensing capability to be flown near such a body, it would be able to directly measure the composition of the body without requiring the mission design complexity involved in landing and sampling surface material. Paramount to understanding the current and future impact ejecta measurements is a sufficient understanding of the impact ejecta processes at the surface. In this presentation, we focus on data taken by the Lunar Dust Experiment (LDEX), an impact ionization dust detector onboard the Lunar Atmosphere and Dust Environment Explorer (LADEE) mission, designed to measure impact ejecta around the Moon. We use the Geminids meteoroid shower as a well constrained input function, and via comparison to existing ground-based measurements of this shower, to "calibrate" the response of the lunar surface to meteoroid bombardment. Understanding the response of the lunar surface to meteoroid bombardment can by extension allow us to better understand the ejecta response at other regolith airless bodies in the solar system. Future missions equipped with dust detectors sent to the Moon, large Near Earth Asteroids, the Martian moons Phobos and Deimos, or many other airless bodies in the solar system would greatly improve our knowledge of their local meteoroid

  18. Considerations about projectile and target X-rays induced during heavy ion bombardment

    Science.gov (United States)

    Fernandes, F.; Bauer, D. V.; Duarte, A.; Ferrari, T. M.; Niekraszewicz, L. A. B.; Amaral, L.; Dias, J. F.

    2018-02-01

    In this work we present some results concerning the X-rays emitted by heavy ions during target bombardment. In this case, Cl4+ and Cl5+ ions with energies from 4 MeV to 10 MeV were employed to irradiate vitreous carbon planchets. Moreover, total X-ray production cross sections of titanium X-rays induced by chlorine ions were obtained as well for the same energy range. Only inner shell transitions were considered in the present work. The titanium target consisted of a thin film deposited over vitreous carbon planchets. The results indicate that the projectile X-ray yields increase as a function of the bombarding energy for the present energy range. Effects due to projectile charge state appears to be of minor importance at these low ion velocities. It is shown that a simple exponential function can represent the continuum background of such complex spectra. The chlorine transition rates Kβ/Kα obtained from chlorine acting as a projectile interacting with a carbon target are about half the value when compared to the chlorine Kβ/Kα ratios obtained when a LiCl target is bombarded with C+ and C3+ ions with energies from 2 MeV to 6 MeV. As far as the total X-ray production cross sections of Ti induced by chlorine ions are concerned, the ECPSSR theory underestimates the Ti total X-rays production cross sections by several orders of magnitude. The role of electron capture and possible mechanisms responsible for these effects are discussed.

  19. The ATLAS Silicon Microstrip Tracker

    CERN Document Server

    Haefner, Petra

    2010-01-01

    In December 2009 the ATLAS experiment at the CERN Large Hadron Collider (LHC) recorded the first proton-proton collisions at a centre-of-mass energy of 900 GeV. This was followed by collisions at the unprecedented energy of 7 TeV in March 2010. The SemiConductor Tracker (SCT) is a precision tracking device in ATLAS made up from silicon micro-strip detectors processed in the planar p-in-n technology. The signal from the strips is processed in the front-end ASICs working in binary readout mode. Data is transferred to the off-detector readout electronics via optical fibers. The completed SCT has been installed inside the ATLAS experiment. Since then the detector was operated for two years under realistic conditions. Calibration data has been taken and analysed to determine the performance of the system. In addition, extensive commissioning with cosmic ray events has been performed both with and without magnetic field. The sensor behaviour in magnetic field was studied by measurements of the Lorentz angle. After ...

  20. Characterization of oxygen dimer-enriched silicon detectors

    CERN Document Server

    Boisvert, V; Moll, M; Murin, L I; Pintilie, I

    2005-01-01

    Various types of silicon material and silicon p+n diodes have been treated to increase the concentration of the oxygen dimer (O2i) defect. This was done by exposing the bulk material and the diodes to 6 MeV electrons at a temperature of about 350 °C. FTIR spectroscopy has been performed on the processed material confirming the formation of oxygen dimer defects in Czochralski silicon pieces. We also show results from TSC characterization on processed diodes. Finally, we investigated the influence of the dimer enrichment process on the depletion voltage of silicon diodes and performed 24 GeV/c proton irradiations to study the evolution of the macroscopic diode characteristics as a function of fluence.

  1. Fast Atom Bombardment Spectrometry - a novel analytical method for biologically interesting, non-volatile substances

    International Nuclear Information System (INIS)

    Schmid, E.

    1987-03-01

    Today important chemical substances like proteins can be produced easily and in large amounts. The primary structure of proteins can be analysed automatically, however the procedure can take some months of time. A novel method, fast atom bombardment mass spectrometry (FAB-MS) in combination with enzymatic degradation not only decreases the analysis time, but gives also additional information about the primary structure. Especially for the verification of protein structures - which is important for recombinant proteins - FAB-MS is a very useful method. 40 refs., 56 figs. (P.W.)

  2. Search for superheavy elements in the bombardment of 248Cm with 48Ca

    International Nuclear Information System (INIS)

    Hulet, E.K.; Lougheed, R.W.; Wild, J.F.; Landrum, J.H.; Stevenson, P.C.; Ghiorso, A.; Nitschke, J.M.; Otto, R.J.; Morrissey, D.J.; Baisden, P.A.; Gavin, B.F.; Lee, D.; Silva, R.J.; Fowler, M.M.; Seaborg, G.T.

    1977-01-01

    We have searched for superheavy elements 110 to 116 with half-lives between 10 4 and 10 8 s in fractions chemically separated after each of a series of bombardments of 248 Cm made with 267-MeV 48 Ca ions. After 6 months of α and spontaneous-fission counting, our results provide no persuasive evidence for the presence of super-heavy elements. The most plausible explanation for not finding the superheavy elements is that they have either short half-lives or very small formation cross sections

  3. Optical radiation emitted by a silver surface bombarded by low-energy electrons

    International Nuclear Information System (INIS)

    Miserey, F.; Lebon, P.; Septier, A.; Trehin, F.; Beaugrand, C.

    1975-01-01

    Thick silver targets are obtained on flat glass discs by evaporation in a UHV cell (p -10 torr) and their optical coefficients measured by ellipsometry. A field-emission electron gun bombards a limited region of the target, corresponding to the entry pupil of a light spectrometer. Radiation emitted in the domain 250-600nm is analyzed for both normal and parallel polarizations. Spectral distributions of photons are obtained by using a very sensitive counting device including a multi channel analyzer. First experimental results concerning optical radiation generated by 6keV electrons are reported and compared to Transition Radiation and Bremsstrahlung theoretical spectra [fr

  4. Elastic scattering, inelastic scattering, and transfer reactions induced by 12C bombardment of 12C

    International Nuclear Information System (INIS)

    Stokstad, R.G.; Wieland, R.M.; Fulmer, C.B.; Hensley, D.C.; Raman, S.; Snell, A.H.; Stelson, P.H.

    1977-06-01

    Graphs and tables of differential cross sections are presented for the elastic scattering of 12 C by 12 C, the single excitation (Q = -4.43 MeV) and the mutual excitation (Q = -8.86 MeV) for 14 bombarding energies in the range 70.7 less than or equal to E/sub lab/ less than or equal to 126.7 MeV. Differential cross sections for one- and two-nucleon transfer are presented for E/sub lab/ = 93.8 MeV

  5. EPR study of electron bombarded alkali- and alkaline-earth halide crystal surfaces

    Science.gov (United States)

    Fryburg, G. C.; Lad, R. A.

    1975-01-01

    An EPR study of electron bombarded LiF, NaCl, KCl, CaF2 and BaF2 polycrystalline surfaces has shown that small metal particles are formed on the surfaces of the crystals. Identification was made from CESR signals. The symmetric line-shape of the signals, even at 77 K, indicated that the particles were less than 0.5 micron in diameter. Signals due to F centers were observed in LiF but not in the other halides. Implications to metal deposition are considered.

  6. High-energy particle emission from galena and pyrite bombarded with Cs and O ions

    International Nuclear Information System (INIS)

    Karpuzov, D.S.; McIntyre, N.S.

    2002-01-01

    The ejection of energetic particles during steady-state ion surface bombardment has been investigated by means of a dynamic computer simulation as well as in a secondary ion mass spectrometry (SIMS)/low-energy ion scattering from surfaces (LEIS) experiment. The emphasis of this comparative study is on the mass dependence of high-energy tails in sputtering and backscattering for the bombardment of galena (PbS) and pyrite (FeS 2 ) with keV energy ion beam of cesium and oxygen. In the experiment, kinetic energy distributions of sputtered secondary ions (S + , Fe + , Pb + , S - ), as well as backscattered or re-sputtered primary ions (Cs + , O + , O - ), have been measured on a modified Cameca IMS-3f magnetic sector mass spectrometer for keV cesium (Cs + ) and oxygen (O 2 + , O - ) bombardment of galena and pyrite. Ejection of high-energy particles, with emission energies of up to ∼40% or up to ∼60% of the bombarding energy for sputtering of the lighter component (S ± ) with cesium or oxygen, respectively, and of up to ∼40% (Cs + ) and ∼80% (O ± ) for backscattering, has been observed for PbS. The computer simulations were based on the well-known MARLOWE code. In order to model the change of the stoichiometry of the binary compounds, dynamic modification of the target composition in the near-surface region was introduced. Cs incorporation was included, and a relative enrichment of the metallic component (Pb, Fe) in the top few layers due to preferential sputtering of sulfur was allowed. The computer simulations provide information on the formation of altered layer under sputter equilibrium as well as on the energy and angular emission distributions of sputtered and backscattered particles in steady-state conditions. Multiple scattering of Cs projectiles and dynamic re-sputtering of cesium that was previously incorporated in the altered near-surface region can be distinguished in the simulation, and matched with the experimental observations. In addition

  7. Low-energy ion bombardment of frozen bacterial spores and its relevance to interplanetary space

    International Nuclear Information System (INIS)

    Tuleta, M.; Gabla, L.; Szkarlat, A.

    2005-01-01

    The panspermia hypothesis is concerned with the dissemination of life in space in the form of simple micro-organisms. During an interplanetary journey the micro-organisms are subjected to the action of, among others, the solar wind. We have simulated experimentally such conditions bombarding frozen bacterial spores with low-energy hydrogen ions. On the basis of the results obtained and our earlier research, a new look at the panspermia hypothesis is discussed. The general conclusion is that unprotected naked spores, their conglomerates and protected spores can survive attack of the solar wind, although to various degrees. (authors)

  8. Comments on Auger electron production by Ne/sup +/ bombardment of surfaces

    Energy Technology Data Exchange (ETDEWEB)

    Pepper, S V; Ferrante, J [National Aeronautics and Space Administration, Cleveland, OH (USA). Lewis Research Center

    1979-09-01

    In this letter, the authors first report rather conclusive experimental evidence showing that the Ne Auger signal is due to asymmetric Ne-metal collisions and not symmetric Ne-Ne collisions. Next it is shown that the Ne Auger signal is in fact observable by Ne/sup +/ bombardment of Si and with signal strength comparable to that of the Si Auger signal for 3 keV incident ion energy. Finally, they comment on some trends in the relative amplitudes of the 21.9 and 25.1 eV Ne Auger signals as a function of incident ion energy and target species.

  9. A theoretical approach to sputtering due to molecular ion bombardment, 1

    International Nuclear Information System (INIS)

    Karashima, Shosuke; Ootoshi, Tsukuru; Kamiyama, Masahide; Kim, Pil-Hyon; Namba, Susumu.

    1981-01-01

    A shock wave model is proposed to explain theoretically the non-linear effects in sputtering phenomena by molecular ion bombardments. In this theory the sputtering processes are separated into two parts; one is due to linear effects and another is due to non-linear effects. The treatment of the linear parts is based on the statistical model by Schwarz and Helms concerning a broad range of atomic collision cascades. The non-linear parts are treated by the model of shock wave due to overlapping cascades, and useful equations to calculate the sputtering yields and the dynamical quantities in the system are derived. (author)

  10. Low-energy ion bombardment of frozen bacterial spores and its relevance to interplanetary space

    Energy Technology Data Exchange (ETDEWEB)

    Tuleta, M.; Gabla, L. [Jagiellonian Univ., Institute of Physics, Cracow (Poland); Szkarlat, A. [Clinical Children' s Hospital of the Jagiellonian Univ., Medical College, Lab. of Microbiology, Cracow (Poland)

    2005-04-01

    The panspermia hypothesis is concerned with the dissemination of life in space in the form of simple micro-organisms. During an interplanetary journey the micro-organisms are subjected to the action of, among others, the solar wind. We have simulated experimentally such conditions bombarding frozen bacterial spores with low-energy hydrogen ions. On the basis of the results obtained and our earlier research, a new look at the panspermia hypothesis is discussed. The general conclusion is that unprotected naked spores, their conglomerates and protected spores can survive attack of the solar wind, although to various degrees. (authors)

  11. Push-and-stick mechanism for charged and excited small cluster emission under ion bombardment

    International Nuclear Information System (INIS)

    Bitensky, I.S.; Parilis, E.S.; Wojciechowski, I.A.

    1992-01-01

    The mechanism for the formation, excitation and ionization of small clusters emitted under ion bombardment is discussed. It is shown that the increased degree of ionization for the transition metal dimers, trimers and tetramers can be explained by the existence of an additional effective channel for their formation, namely the associative ionization process. A simple estimate shows that the sticking together of a fast cascade atom and the pushed out surface atom is 30-40 times more effective for dimer formation, than the recombination of two fast atoms. This push-and-stick mechanism of cluster formation could also be effective for the formation of trimers and tetramers. (orig.)

  12. Measurement of electron emission due to energetic ion bombardment in plasma source ion implantation

    Science.gov (United States)

    Shamim, M. M.; Scheuer, J. T.; Fetherston, R. P.; Conrad, J. R.

    1991-11-01

    An experimental procedure has been developed to measure electron emission due to energetic ion bombardment during plasma source ion implantation. Spherical targets of copper, stainless steel, graphite, titanium alloy, and aluminum alloy were biased negatively to 20, 30, and 40 kV in argon and nitrogen plasmas. A Langmuir probe was used to detect the propagating sheath edge and a Rogowski transformer was used to measure the current to the target. The measurements of electron emission coefficients compare well with those measured under similar conditions.

  13. Absorption of hydrogen in vanadium, enhanced by ion bombardment; Ionenbeschussunterstuetzte Absorption des Wasserstoffs in Vanadium

    Energy Technology Data Exchange (ETDEWEB)

    Paulus, H.; Lammers, M. [Inst. fuer Technologie- und Wissenstransfer, Soest (Germany); Mueller, K.H. [Inst. fuer Technologie- und Wissenstransfer, Soest (Germany)]|[Paderborn Univ. (Gesamthochschule), Soest (Germany). Fachbereich 16 - Elektrische Energietechnik; Kiss, G.; Kemeny, Z. [Technical Univ. Budapest (Hungary)

    1998-12-31

    Prior to hydrogen implantation into vanadium, the vanadium specimen usually is exposed to an activation process and is then heated at 1 atm hydrogen to temperatures between 500 and 600 C, subsequently cooled down in several steps. Within this temperature range, hydrogen solubility increases with declining temperature. A decisive factor determining hydrogen absorption is the fact that at temperatures above 250 C, oxygen desorbs from the material surface and thus no longer inhibits hydrogen absorption. Therefore a different approach was chosen for the experiments reported: Hydrogen absorption under UHV conditions at room temperature. After the usual activation process, the vanadium surface was cleaned by 5 keV Ar{sup +} ion bombardment. Thus oxygen absorption at the specimen surface (and new reactions with oxygen from the remaining gas) could be avoided, or removed. By means of thermal desorption mass spectrometry (TDMS), hydrogen absorption as a function of argon ion dose was analysed. TDMS measurements performed for specimens treated by ion bombardment prior to H{sup 2} exposure showed two H{sup 2} desorption peaks, in contrast to the profiles measured with specimens not exposed to ion bombardment. It is assumed that the ion bombardment disturbs the crystal structure so that further sites for hydrogen absorption are produced. (orig./CB) [Deutsch] Bei der Beladung von Vandium mit Wasserstoff wird ueblicherweise die Probe nach einer Aktivierungsprozedur bei 1 atm Wasserstoff auf Temperaturen im Bereich von 500 bis 600 C hochgeheizt und danach schrittweise abgekuehlt. In diesem Temperaturbereich nimmt die Wasserstoffloeslichkeit mit abnehmender Temperatur zu. Entscheidend fuer die Beladung ist aber auch die Tatsache, dass bei Temperaturen groesser 250 C Sauerstoff von der Oberflaeche desorbiert und dadurch die Absorption von Wasserstoff nicht mehr blockieren kann. Im Rahmen der hier beschriebenen Untersuchungen sollte die Wasserstoffbeladung unter UHV-Bedingungen bei

  14. Study of ion-bombardment-induced surface topography of silver by stereophotogrammetric method

    International Nuclear Information System (INIS)

    Fayazov, I.M.; Sokolov, V.N.

    1992-01-01

    The ion-bombardment-induced surface topography of polycrystalline silver was studied using the stereophotogrammetric method. The samples were irradiated with 30keV argon ions at fairly high fluences (> 10 17 ions/cm 2 ). The influence of the inclination angle of the sample in the SEM on the cone shape of a SEM-picture is discussed. To analyse the irradiated surfaces covered with cones, the SEM-stereotechnique is proposed. The measurements of the sample section perpendicular to the incidence plane are also carried out. (author)

  15. Investigation of energy thresholds of atomic and cluster sputtering of some elements under ion bombardment

    CERN Document Server

    Atabaev, B G; Lifanova, L F

    2002-01-01

    Threshold energies of sputtering of negative cluster ions from the Si(111) surface were measured at bombardment by Cs sup + , Rb sup + , and Na sup + ions with energy of 0.1-3.0 keV. These results are compared with the calculations of the similar thresholds by Bohdansky etc. formulas (3) for clusters Si sub n sup - and Cu sub n sup - with n=(1-5) and also for B, C, Al, Si, Fe, Cu atoms. Threshold energies of sputtering for the above elements were also estimated using the data from (5). Satisfactory agreement between the experimental and theoretical results was obtained. (author)

  16. Angular and energy dependence of ion bombardment of Mo/Si multilayers

    DEFF Research Database (Denmark)

    Voorma, H.J.; Louis, E.; Bijkerk, F.

    1997-01-01

    The process of ion bombardment is investigated for the fabrication of Mo/Si multilayer x-ray mirrors using e-beam evaporation. The ion treatment is applied immediately after deposition of each of the Si layers to smoothen the layers by removing an additional thickness of the Si layer. In this stu......, the angular dependence of the etch yield, obtained from the in situ reflectivity measurements, is investigated in order o determine the optimal ion beam parameters for the production of multilayer mirrors on curved substrates....

  17. Proton decay: spectroscopic probe beyond the proton drip line

    International Nuclear Information System (INIS)

    Seweryniak, D; Davids, C N; Robinson, A; Woods, P J; Blank, B; Carpenter, M P; Davinson, T; Freeman, S J; Hammond, N; Hoteling, N; Janssens, R V F; Khoo, T L; Liu, Z; Mukherjee, G; Shergur, J; Sinha, S; Sonzogni, A A; Walters, W B; Woehr, A

    2005-01-01

    Proton decay has been transformed in recent years from an exotic phenomenon into a powerful spectroscopic tool. The frontiers of experimental and theoretical proton-decay studies will be reviewed. Different aspects of proton decay will be illustrated with recent results on the deformed proton emitter 135 Tb, the odd-odd deformed proton emitter 130 Eu, the complex fine structure in the odd-odd 146 Tm nucleus and on excited states in the transitional proton emitter 145 Tm

  18. Review of inelastic proton-proton reactions

    CERN Document Server

    Morrison, Douglas Robert Ogston

    1973-01-01

    The most important new results on inelastic proton-proton scattering obtained with the new machines, I.S.R. and N.A.L., are: (1) The inelastic cross-section increases monotonically with energy from threshold to 1500 GeV/c. Above 6 GeV/c the energy variation has a s /sup +0.04/ behaviour. (2) Scaling is observed at I.S.R. energies in pion production. Confirmation is obtained of the hypothesis of limiting fragmentation. (3) The results are in general, consistent with the two-component model-one class of events being produced by diffraction dissociation and the other by a short-range-order process (e.g. the multiperipheral model). (4) There are indications that the protons have a granular structure; this from observation of secondaries of large transverse momenta. (33 refs).

  19. Systematic characterization and quality assurance of silicon micro-strip sensors for the Silicon Tracking System of the CBM experiment

    Science.gov (United States)

    Ghosh, P.

    2014-07-01

    The Silicon Tracking System (STS) is the central detector of the Compressed Baryonic Matter (CBM) experiment at future Facility for Anti-proton and Ion Research (FAIR) at Darmstadt. The task of the STS is to reconstruct trajectories of charged particles originating at relatively high multiplicities from the high rate beam-target interactions. The tracker comprises of 300 μm thick silicon double-sided micro-strip sensors. These sensors should be radiation hard in order to reconstruct charged particles up to a maximum radiation dose of 1 × 1014neqcm-2. Systematic characterization allows us to investigate the sensor response and perform quality assurance (QA) tests. In this paper, systematic characterization of prototype double-sided silicon micro-strip sensors will be discussed. This procedure includes visual, passive electrical, and radiation hardness test. Presented results include tests on three different prototypes of silicon micro-strip sensors.

  20. Systematic characterization and quality assurance of silicon micro-strip sensors for the Silicon Tracking System of the CBM experiment

    International Nuclear Information System (INIS)

    Ghosh, P

    2014-01-01

    The Silicon Tracking System (STS) is the central detector of the Compressed Baryonic Matter (CBM) experiment at future Facility for Anti-proton and Ion Research (FAIR) at Darmstadt. The task of the STS is to reconstruct trajectories of charged particles originating at relatively high multiplicities from the high rate beam-target interactions. The tracker comprises of 300 μm thick silicon double-sided micro-strip sensors. These sensors should be radiation hard in order to reconstruct charged particles up to a maximum radiation dose of 1 × 10 14 n eq cm −2 . Systematic characterization allows us to investigate the sensor response and perform quality assurance (QA) tests. In this paper, systematic characterization of prototype double-sided silicon micro-strip sensors will be discussed. This procedure includes visual, passive electrical, and radiation hardness test. Presented results include tests on three different prototypes of silicon micro-strip sensors