Origin of Si(LMM) Auger Electron Emission from Silicon and Si-Alloys by keV Ar+ Ion Bombardment

Science.gov (United States)

Iwami, Motohiro; Kim, Su Chol; Kataoka, Yoshihide; Imura, Takeshi; Hiraki, Akio; Fujimoto, Fuminori

1980-09-01

Si(LMM) Auger electrons emitted from specimens of pure silicon and several Si-alloys (Ni-Si, Pd-Si and Cu-Si) under keV Ar+ ion bombardment, were examined. In the Auger spectra from all specimens studied there were four peaks at energies of 92, 86, 76 and 66 eV. The Auger signal intensity varied considerably with both the incident angle and the energy of the primary ion beam. It is proposed that the Auger electrons are emitted from silicon atoms (or ions) just beneath the specimen surface but free from the bulk network.

The search for molecular effects in range corrections: boron determination by proton bombardment

International Nuclear Information System (INIS)

Olivier, C.; Peisach, M.

1985-01-01

Three different nuclear reactions viz. 10 B(p,αγ) 7 Be, 10 B(p,p,'γ) 10 B, and 11 B(p,p'γ) 11 B were used to analyse 21 pure boron compounds and mixtures of known composition by prompt gamma-ray spectrometry under proton bombardment. Elemental stopping powers were calculated from tables and used to compute the stopping power of the target matrices by Bragg's Law. Apparent discrepancies in the measured yield could point to deviations from Bragg's Law and hence to molecular effects. The maximum value for any molecular effect was found to be < 8,3%

Low-energy ion bombardment to tailor the interfacial and mechanical properties of polycrystalline 3C-silicon carbide

International Nuclear Information System (INIS)

Liu Fang; Li, Carolina H.; Pisano, Albert P.; Carraro, Carlo; Maboudian, Roya

2010-01-01

Low-energy Ar + ion bombardment of polycrystalline 3C-silicon carbide (poly-SiC) films is found to be a promising surface modification method to tailor the mechanical and interfacial properties of poly-SiC. The film average stress decreases as the ion energy and the bombardment time increase. Furthermore, this treatment is found to change the strain gradient of the films from positive to negative values. The observed changes in stress and strain gradient are explained by ion peening and thermal spikes models. In addition, the poly-SiC films show a significant enhancement in corrosion resistance by this treatment, which is attributed to a reduction in surface energy and to an increase in the compressive stress in the near-surface region.

Effects of radiation damage on the silicon lattice

Science.gov (United States)

Dumas, Katherine A.; Lowry, Lynn; Russo, O. Louis

1987-01-01

Silicon was irradiated with both proton and electron particle beams in order to investigate changes in the structural and optical properties of the lattice as a result of the radiation damage. Lattice expansions occurred when large strain fields (+0.34 percent) developed after 1- and 3-MeV proton bombardment. The strain was a factor of three less after 1-MeV electron irradiation. Average increases of approximately 22 meV in the 3.46-eV interband energy gap and 14 meV in the Lorentz broadening parameter were measured after the electron irradiation.

Low temperature magnetron sputter deposition of polycrystalline silicon thin films using high flux ion bombardment

International Nuclear Information System (INIS)

Gerbi, Jennifer E.; Abelson, John R.

2007-01-01

We demonstrate that the microstructure of polycrystalline silicon thin films depends strongly on the flux of low energy ions that bombard the growth surface during magnetron sputter deposition. The deposition system is equipped with external electromagnetic coils which, through the unbalanced magnetron effect, provide direct control of the ion flux independent of the ion energy. We report the influence of low energy ( + on the low temperature ( + ions to silicon neutrals (J + /J 0 ) during growth by an order of magnitude (from 3 to 30) enables the direct nucleation of polycrystalline Si on glass and SiO 2 coated Si at temperatures below 400 degree sign C. We discuss possible mechanisms for this enhancement of crystalline microstructure, including the roles of enhanced adatom mobility and the formation of shallow, mobile defects

A model for the build-up of disordered material in ion bombarded Si

International Nuclear Information System (INIS)

Nelson, R.S.

1977-01-01

A new model based on experimental observation is developed for the build-up of disordered material in ion bombarded silicon. The model assumes that disordered zones are created in a background of migrating point defects, these zones then act as neutral sinks for such defects which interact with the zones and cause recrystallization. A simple steady state rate theory is developed to describe the build-up of disordered material with ion dose as a function of temperature. In general the theory predicts two distinct behaviour patterns depending on the temperature and the ion mass, namely a linear build-up with dose to complete disorder for heavy bombarding ions and a build-up to saturation at a relatively low level for light ions such as protons. However, in some special circumstances a transition region is predicted where the build-up of disorder approximately follows a (dose)sup(1/2) relationship before reverting to a linear behaviour at high dose. (author)

Nuclear forensics of a colored gemstone: evidence of proton bombardment of a blue topaz

International Nuclear Information System (INIS)

Steinhauser, Georg; Sterba, Johannes H.; Hammer, Vera M.F.

2013-01-01

A blue topaz was investigated radiologically for forensic purposes. It clearly exhibited detectable activities of 22 Na (0.28±0.01 Bq). The occurrence of this artificial radionuclide evidences fraudulent irradiation of the gemstone with protons to give it its blue color. It can be assumed that also 7 Be must have been produced in the course of proton bombardment, yielding even greater activities than 22 Na. Since no traces of short-lived 7 Be could be detected, the topaz must have been irradiated at least 300 days prior to measurement. - Highlights: ► A blue topaz was radiologically investigated for forensic purposes. ► Detectable activities of 22 Na were found. ► The lack of 7 Be indicates that the gemstone was irradiated >300 d prior to measurement. ► The irradiation was performed by fraudulent intent to give the topaz the blue color

Effect of 200 keV proton irradiation on the properties of methyl silicone rubber

International Nuclear Information System (INIS)

Zhang Lixin; Xu Zhou; Wei Qiang; He Shiyu

2006-01-01

The effects of 200 keV proton irradiation on methyl silicone rubber were studied. The changes in surface morphology, mechanical properties, cross-linking density, glass transition temperature, infrared attenuated total reflection spectrum and mass spectrum indicated that, at lower fluence, the proton irradiation induced cross-linking, resulting in an increase in tensile strength and hardness of the methyl silicone rubber. However, at higher proton fluence, radiation-induced degradation, which decreased the tensile strength and hardness, became dominant. A macromolecular-network destruction model for silicone rubber irradiated with protons was proposed

Origin of Si(LMM) Auger electron emission from silicon and Si-alloys by keV Ar/sup +/ ion bombardment

Energy Technology Data Exchange (ETDEWEB)

Iwami, M; Kim, S; Kataoka, Y; Imura, T; Hiraki, A [Osaka Univ., Suita (Japan). Faculty of Engineering

1980-09-01

Si(LMM) Auger electrons emitted from specimens of pure silicon and several Si-alloys (Ni-Si, Pd-Si and Cu-Si) under keV Ar/sup +/ ion bombardment, were examined. In the Auger spectra from all specimens studied there were four peaks at energies of 92, 86, 76 and 66 eV. The Auger signal intensity varied considerably with both the incident angle and the energy of the primary ion beam. It is proposed that the Auger electrons are emitted from silicon atoms (or ions) just beneath the specimen surface but free from the bulk network.

Production of 95mTc with proton bombardment of 95Mo

International Nuclear Information System (INIS)

Izumo, M.; Matsuoka, H.; Sorita, T.; Nagame, Y.; Sekine, T.; Hata, K.; Baba, S.

1991-01-01

Formation cross sections of 95m Tc and 95g Tc via the 95 Mo (p,n) reaction have been measured to evaluate the production yield of 95m Tc which is expected to be a useful radiotracer of technetium isotopes. It was found from the cross section data that for incident proton energies above 15 MeV, the thick-target yield of 95m Tc was more than 20 μCi/μAh at the end of bombardment and the 95g Tc contamination was less than 1% after 12 d cooling. To examine the separation and purification of 95m Tc from target, we have carried out a test production of 95m Tc using a thick 95 Mo-enriched target. Other reactions of producing 95m Tc are compared and discussed in terms of the production yield and amounts of contaminants. (author)

The new generations of power components will depend on neutron and/or electron bombardment techniques

International Nuclear Information System (INIS)

Lilen, H.

1976-01-01

Neutron and electron bombardment techniques for materials doping, newly introduced in the fabrication of power semiconductor components: diodes, transistors, thyristors, and triacs are briefly outlined. A neutron bombardment of high purity silicon results in a short-lived 31 Si isotope (from 30 Si) decaying into 31 P. The phosphorus with its five peripheral electrons induces a negative doping (N), and the neutron technique gives a homogeneous doping. Furthermore, silicon bombardment with 1 to 2MeV electrons induces micro-ruptures in the lattice, that act as recombination traps reducing carrier lifetimes. Consequently, gold diffusion techniques can be replaced by electron bombardment with a gain in controlling carrier lifetimes [fr

Angular dependence of secondary ion emission from silicon bombarded with inert gas ions

International Nuclear Information System (INIS)

Wittmaack, K.

1984-01-01

The emission of positive and negative, atomic and molecular secondary ions sputtered from silicon has been studied under ultrahigh vacuum conditions. The sample was bombarded with 2-12 keV Ar + and Xe + ions at angles of incidence between 0 0 and 60 0 to the surface normal. The angular dependence of the secondary ion intensity as well as the energy spectra of Si + and Si - were found to differ significantly. The effect is attributed mostly do differences in the rate of neutralization. The stability of molecular ions appears to be independent of the charge state. Supporting evidence is provided for the idea that multiply charged secondary ions are due to Auger de-excitation of sputtered atoms in vacuum. (orig.)

Experimental study on neutronics in bombardment of thick targets by high energy proton beams for accelerator-driven sub-critical system

CERN Document Server

Guo Shi Lun; Shi Yong Qian; Shen Qing Biao; Wan Jun Sheng; Brandt, R; Vater, P; Kulakov, B A; Krivopustov, M I; Sosnin, A N

2002-01-01

The experimental study on neutronics in the target region of accelerator-driven sub-critical system is carried out by using the high energy accelerator in Joint Institute for Nuclear Research, Dubna, Russia. The experiments with targets U(Pb), Pb and Hg bombarded by 0.533, 1.0, 3.7 and 7.4 GeV proton beams show that the neutron yield ratio of U(Pb) to Hg and Pb to Hg targets is (2.10 +- 0.10) and (1.76 +- 0.33), respectively. Hg target is disadvantageous to U(Pb) and Pb targets to get more neutrons. Neutron yield drops along 20 cm thick targets as the thickness penetrated by protons increases. The lower the energy of protons, the steeper the neutron yield drops. In order to get more uniform field of neutrons in the targets, the energy of protons from accelerators should not be lower than 1 GeV. The spectra of secondary neutrons produced by different energies of protons are similar, but the proportion of neutrons with higher energy gradually increases as the proton energy increases

Diagnosis by proton bombardment

International Nuclear Information System (INIS)

Steward, V.W.; Koehler, A.M.

1976-01-01

Beams of monoenergetic protons or other charged ions are passed through the living human body to detect abnormalities and obstructions in body tissue, which abnormalities and obstructions are visualized as density variations in the particle image emerging from the body part under investigation. The particles used are preferably protons having an energy of 100 to 300 MeV, more especially 200 to 300 MeV. The method is of use in detecting inter alia tumors, blood clots, infarcts, soft tissue lesions and multiple sclerosis in patients without exposure to high radiation dosages. 6 claims, 2 drawing figures

Proton irradiation effects of amorphous silicon solar cell for solar power satellite

Energy Technology Data Exchange (ETDEWEB)

Morita, Yousuke; Oshima, Takeshi [Japan Atomic Energy Research Inst., Takasaki, Gunma (Japan). Takasaki Radiation Chemistry Research Establishment; Sasaki, Susumu; Kuroda, Hideo; Ushirokawa, Akio

1997-03-01

Flexible amorphous silicon(fa-Si) solar cell module, a thin film type, is regarded as a realistic power generator for solar power satellite. The radiation resistance of fa-Si cells was investigated by the irradiations of 3,4 and 10 MeV protons. The hydrogen gas treatment of the irradiated fa-Si cells was also studied. The fa-Si cell shows high radiation resistance for proton irradiations, compared with a crystalline silicon solar cell. (author)

Proton irradiation effects in silicon devices

Energy Technology Data Exchange (ETDEWEB)

Simoen, E; Vanhellemont, J; Alaerts, A [IMEC, Leuven (Belgium); and others

1997-03-01

Proton irradiation effects in silicon devices are studied for components fabricated in various substrates in order to reveal possible hardening effects. The degradation of p-n junction diodes increases in first order proportionally with the fluence, when submitted to 10 MeV proton irradiations in the range 5x10{sup 9} cm{sup -2} to 5x10{sup 11} cm{sup -2}. The damage coefficients for both p- and n-type Czochralski, Float-Zone and epitaxial wafers are reported. Charge-Coupled Devices fabricated in a 1.2 {mu}m CCD-CMOS technology are shown to be quite resistant to 59 MeV H{sup +} irradiations, irrespective of the substrate type. (author)

Experimental measurement of proton penetration in silicon

International Nuclear Information System (INIS)

Castaing, C.; Baruch, P.; Picard, C.

1974-01-01

After proton implantation in silicon at high fluence, hydrogen precipitation in bubbles is induced by annealing. The stresses are so high that blister formation and peeling occur, leaving flat bottomed pits, with a depth equal to the projected proton range R(p). In this way R(p) was measured between 200 and 600keV, and compared with already published values, and with values computed through LSS (Lindhard, Scharff, and Schiott) theory, using a correct electronic stopping power. A table of ranges and standard deviations, computed in this way is given. The agreement with experimental results is excellent [fr

The crystalline-to-amorphous transition in ion-bombarded silicon

International Nuclear Information System (INIS)

Mueller, G.; Kalbitzer, S.

1980-01-01

Hydrogen-free, but defect-rich a-Si can be obtained by ion bombardment of c-Si. The formation of such material has been studied in detail using carrier-removal measurements in the characterization of the bombardment damage. In order to develop an overall view of the disordering process these data are discussed together with results obtained on similar films by Rutherford back-scattering, electron spin resonance, electron microscopy and optical measurements. It is concluded that amorphous material generally evolves from an intermediate crystalline phase supersaturated with point defects. The transition occurs locally at the sites of energetic ion impacts into critically predamaged crystalline material. As a consequence, an amorphous layer is built up from small clusters with dimensions typically of the order of 50 A. From the net expansion of the bombarded layers it is concluded that regions of lower atomic density are locally present, very likely a consequence of a structural mismatch between individual amorphous clusters. In this way a heterogeneous defect structure may build up in these films which determines their electronic properties. (author)

Recovery of 201Tl by ion exchange chromatography from proton bombarded thallium cyclotron targets

International Nuclear Information System (INIS)

Walt, T.N. van der; Naidoo, C.

2000-01-01

A method based on ion exchange chromatography is presented for the recovery of 201 Tl and its precursor 201 Pb from proton bombarded natural thallium cyclotron targets. After bombardment the target is dissolved in diluted nitric acid. Water, hydrazine and ammonium acetate are added to the solution and the lead radioisotopes separated from the thallium by cation exchange chromatography on a Bio-Rex 70 column. The sorbed lead radioisotopes are eluted with dilute nitric acid and the separation repeated on a second Bio-Rex 70 column. After elution of the remaining thallium the column is left for 32 hours and the 201 Tl formed by decay of 201 Pb is eluted with an ammonium acetate solution. The 201 Tl eluate is acidified with a HNO 3 -HBr-Br 2 mixture and the resulting solution is passed through an AG MP-1 anion exchanger column to remove any remaining lead isotopes. The 201 Tl is eluted with a hydrazine solution, the eluate evaporated to dryness and the 201 Tl finally dissolved in an appropriate solution to produce a 201 TlCl solution suitable for medical use. A high quality 201 Tl product is obtained containing ≤ 0.1 μg of Tl/mCi (37 MBq) 201 Tl. The radionuclidic impurities are less than the maximum values specified by the US Pharmacopoeia and the British Pharmacopoeia. (orig.)

Modification of Polymer Materials by Ion Bombardment: Case Studies

International Nuclear Information System (INIS)

Bielinski, D. M.; Jagielski, J.; Lipinski, P.; Pieczynska, D.; Ostaszewska, U.; Piatkowska, A.

2009-01-01

The paper discusses possibility of application of ion beam bombardment for modification of polymers. Changes to composition, structure and morphology of the surface layer produced by the treatment and their influence on engineering and functional properties of wide range of polymer materials are presented. Special attention has been devoted to modification of tribological properties. Ion bombardment results in significant reduction of friction, which can be explained by increase of hardness and wettability of polymer materials. Hard but thin enough skin does not result in cracking but improves their abrasion resistance. Contrary to conventional chemical treatment ion beam bombardment works even for polymers hardly susceptible to modification like silicone rubber or polyolefines.

Silicon/HfO2 interface: Effects of proton irradiation

International Nuclear Information System (INIS)

Maurya, Savita; Radhakrishna, M.

2015-01-01

Substrate oxide interfaces are of paramount importance in deciding the quality of the semiconductor devices. In this work we have studied how 200 keV proton irradiation affects the interface of a 13 nm thick, atomic layer deposited hafnium dioxide on silicon substrate. Pre- and post-irradiation electrical measurements are used to quantify the effect of proton irradiation for varying electrode geometries. Proton irradiation introduces positive charge in the oxide and at the interface of Si/HfO 2 interface. The gate current is not very much affected under positive injection since the induced positive charge is compensated by the injected electrons. Current voltage characteristics under negative bias get affected by the proton irradiation

Neutron spectrometry with a monolithic silicon telescope.

Science.gov (United States)

Agosteo, S; D'Angelo, G; Fazzi, A; Para, A Foglio; Pola, A; Zotto, P

2007-01-01

A neutron spectrometer was set-up by coupling a polyethylene converter with a monolithic silicon telescope, consisting of a DeltaE and an E stage-detector (about 2 and 500 microm thick, respectively). The detection system was irradiated with monoenergetic neutrons at INFN-Laboratori Nazionali di Legnaro (Legnaro, Italy). The maximum detectable energy, imposed by the thickness of the E stage, is about 8 MeV for the present detector. The scatter plots of the energy deposited in the two stages were acquired using two independent electronic chains. The distributions of the recoil-protons are well-discriminated from those due to secondary electrons for energies above 0.350 MeV. The experimental spectra of the recoil-protons were compared with the results of Monte Carlo simulations using the FLUKA code. An analytical model that takes into account the geometrical structure of the silicon telescope was developed, validated and implemented in an unfolding code. The capability of reproducing continuous neutron spectra was investigated by irradiating the detector with neutrons from a thick beryllium target bombarded with protons. The measured spectra were compared with data taken from the literature. Satisfactory agreement was found.

Measurements of Neutron Spectra Produced from a Thick Iron Target Bombarded with 1.5-GeV Protons

International Nuclear Information System (INIS)

Meigo, Shin-ichiro; Shigyo, Nobuhiro; Iga, Kiminori; Iwamoto, Yosuke; Kitsuki, Hirohiko; Ishibashi, Kenji; Maehata, Keisuke; Arima, Hidehiko; Nakamoto, Tatsushi; Numajiri, Masaharu

2005-01-01

For validation of calculation codes that are employed in the design of accelerator facilities, spectra of neutrons produced from a thick iron target bombarded with 1.5-GeV protons were measured. The calculated results with NMTC/JAM were compared with the present experimental results. It is found that the NMTC/JAM generally shows good agreement with experiment. Furthermore, the calculation gives good agreement with the experiment for the energy region 20 to 80 MeV for iron, whereas the NMTC/JAM gives 50% of the experimental data for the heavy-nuclides such as lead and tungsten

Measurements of neutron spectra produced from a thick iron target bombarded with 1.5 GeV protons

International Nuclear Information System (INIS)

Meigo, Shin-ichiro; Takada, Hiroshi

2001-01-01

For validation of calculation codes which are employed in the design of accelerator facilities, spectra of neutrons produced from a thick iron target bombarded with 1.5-GeV protons were measured. The calculated results with NMTC/JAM were compared with the present experimental results. It is found the NMTC/JAM generally shows in good agreement with experiment. Furthermore, the calculation gives good agreement with the experiment for the energy region 20-80 MeV, whereas the NMTC/JAM gives 50% of the experimental data for the heavy nuclide target such as lead and tungsten target. (author)

Energy-dependent proton damage in silicon

Energy Technology Data Exchange (ETDEWEB)

Donegani, Elena Maria

2017-09-29

Non Ionizing Energy Loss (NIEL) in the sensor bulk is a limiting factor for the lifetime of silicon detectors. In this work, the proton-energy dependent bulkdamage is studied in n- and p-type silicon pad diodes. The samples are thin (200 μm thick), and oxygen enriched (bulk material types: MCz, standard or deepdiffused FZ). Irradiations are performed with 23 MeV, 188 MeV and 23 GeV protons; the 1 MeV neutron equivalent fluence assumes selected values in the range [0.1,3].10{sup 14} cm{sup -2}. In reverse bias, Current-Voltage (IV) and Capacitance-Voltage (CV) measurements are performed to electrically characterise the samples; in forward bias, IV and CV measurements point out the transition from lifetime to relaxationlike semiconductor after irradiation. By means of Thermally Stimulated Current (TSC) measurements, 13 bulk defects have been found after proton irradiation. Firstly, TSC spectra are analysed to obtain defect concentrations after defect filling at the conventional temperature T{sub fill} =10 K. Secondly, temperature dependent capture coefficients of bulk defects are explained, according to the multi-phonon process, from the analysis of TSC measurements at higher filling temperatures (T{sub fill}<130 K). Thirdly, a new method based on the SRH statistics and accounting for cluster-induced shift in activation energy is proposed; it allows to fully characterise bulk defects (in terms of activation energy, concentration and majority capture cross-section) and to distinguish between point- and cluster-like defects. A correlation is noted between the leakage current and the concentration of three deep defects (namely the V{sub 2}, V{sub 3} and H(220K) defects), for all the investigated bulk materials and types, and after all the considered proton energies and fluences. At least five defects are found to be responsible for the space charge, with positive contributions from the E(30K) and B{sub i}O{sub i} defects, or negative contributions from three deep

Energy-dependent proton damage in silicon

International Nuclear Information System (INIS)

Donegani, Elena Maria

2017-01-01

Non Ionizing Energy Loss (NIEL) in the sensor bulk is a limiting factor for the lifetime of silicon detectors. In this work, the proton-energy dependent bulkdamage is studied in n- and p-type silicon pad diodes. The samples are thin (200 μm thick), and oxygen enriched (bulk material types: MCz, standard or deepdiffused FZ). Irradiations are performed with 23 MeV, 188 MeV and 23 GeV protons; the 1 MeV neutron equivalent fluence assumes selected values in the range [0.1,3].10 14 cm -2 . In reverse bias, Current-Voltage (IV) and Capacitance-Voltage (CV) measurements are performed to electrically characterise the samples; in forward bias, IV and CV measurements point out the transition from lifetime to relaxationlike semiconductor after irradiation. By means of Thermally Stimulated Current (TSC) measurements, 13 bulk defects have been found after proton irradiation. Firstly, TSC spectra are analysed to obtain defect concentrations after defect filling at the conventional temperature T fill =10 K. Secondly, temperature dependent capture coefficients of bulk defects are explained, according to the multi-phonon process, from the analysis of TSC measurements at higher filling temperatures (T fill <130 K). Thirdly, a new method based on the SRH statistics and accounting for cluster-induced shift in activation energy is proposed; it allows to fully characterise bulk defects (in terms of activation energy, concentration and majority capture cross-section) and to distinguish between point- and cluster-like defects. A correlation is noted between the leakage current and the concentration of three deep defects (namely the V 2 , V 3 and H(220K) defects), for all the investigated bulk materials and types, and after all the considered proton energies and fluences. At least five defects are found to be responsible for the space charge, with positive contributions from the E(30K) and B i O i defects, or negative contributions from three deep acceptors H(116K), H(140K) and H(152K).

Measurement of induced radioactivity in a spallation neutron field of a mercury target for GeV-proton bombardment

International Nuclear Information System (INIS)

Kasugai, Y.; Takada, H.; Nakashima, H.

2001-01-01

An integral experiment on radioactivity induced in spallation neutron fields was carried out under the ASTE (AGS-Spallation Target Experiment) collaboration using AGS (Alternative Gradient Synchrotron) at BNL (Brookhaven National Laboratory). The spallation neutrons were produced by bombarding a mercury target with protons of 1.6, 12 and 24 GeV. The number of protons was 3 - 4 x 10 13 for each irradiation. The irradiated materials were titanium, nickel, cobalt, yttrium, and bismuth, and placed on the cylindrical surface of the mercury target at the distance of 15 - 16 cm from the beam-incident-surface of the target. Disintegration rates of induced radioactivities were measured at several cooling-time ranging from hours to months. The principal nuclides contributing to the radioactivity were pointed out for each material. The experimental results for bismuth were compared with the calculations with DCAHIN-SP code. (author)

Neutron energy spectra produced by α-bombardment of light elements in thick targets

International Nuclear Information System (INIS)

Jacobs, G.J.H.

1982-01-01

The aim of the work, presented in this thesis, is to determine energy spectra of neutrons produced by α-particle bombardment of thick targets containing light elements. These spectra are required for nuclear waste management. The set-up of the neutron spectrometer is described, and its calibration discussed. Absolute efficiencies were determined at various neutron energies, using monoenergetic neutrons produced with the Van de Graaff accelerator in pulsed mode. The additional calibration of the neutron spectrometer as proton-recoil spectrometer was carried out primarily for future applications in measurements where no pulsed neutron source is available or the neutron flux density is too low. The basis for an accurate uncertainty analysis is made by the determination of the covariance matrix for the uncertainties in the efficiencies. The determination of the neutron energy spectra from time-of-flight and from proton-recoil measurements is described. A comparison of the results obtained from the two different types of measurements is made. The experimentally determined spectra were compared with spectra calculated from stopping powers and theoretically determined cross sections. These cross sections were calculated from optical model parameters and level parameters using the Hauser-Feshbach formalism. Measurements were carried out on thick targets of silicon, aluminium, magnesium, carbon, boron nitride, calcium fluoride, aluminium oxide, silicon oxide and uranium oxide at four different α-particle energies. (Auth.)

Measurement of induced radioactivity in a spallation neutron field of a mercury target for GeV-proton bombardment

Energy Technology Data Exchange (ETDEWEB)

Kasugai, Y.; Takada, H.; Nakashima, H. [Japan Atomic Energy Research Inst., Tokai, Ibaraki (Japan). Tokai Research Establishment] [and others

2001-03-01

An integral experiment on radioactivity induced in spallation neutron fields was carried out under the ASTE (AGS-Spallation Target Experiment) collaboration using AGS (Alternative Gradient Synchrotron) at BNL (Brookhaven National Laboratory). The spallation neutrons were produced by bombarding a mercury target with protons of 1.6, 12 and 24 GeV. The number of protons was 3 - 4 x 10{sup 13} for each irradiation. The irradiated materials were titanium, nickel, cobalt, yttrium, and bismuth, and placed on the cylindrical surface of the mercury target at the distance of 15 - 16 cm from the beam-incident-surface of the target. Disintegration rates of induced radioactivities were measured at several cooling-time ranging from hours to months. The principal nuclides contributing to the radioactivity were pointed out for each material. The experimental results for bismuth were compared with the calculations with DCAHIN-SP code. (author)

A new silicon tracker for proton imaging and dosimetry

Energy Technology Data Exchange (ETDEWEB)

Taylor, J.T., E-mail: jtaylor@hep.ph.liv.ac.uk [Department of Physics, University of Liverpool, Oxford Street, Liverpool L69 7ZE (United Kingdom); Waltham, C. [Laboratory of Vision Engineering, School of Computer Science, University of Lincoln, Lincoln LN6 7TS (United Kingdom); Price, T. [School of Physics and Astronomy, University of Birmingham, Birmingham B25 2TT (United Kingdom); Allinson, N.M. [Laboratory of Vision Engineering, School of Computer Science, University of Lincoln, Lincoln LN6 7TS (United Kingdom); Allport, P.P. [School of Physics and Astronomy, University of Birmingham, Birmingham B25 2TT (United Kingdom); Casse, G.L. [Department of Physics, University of Liverpool, Oxford Street, Liverpool L69 7ZE (United Kingdom); Kacperek, A. [Douglas Cyclotron, The Clatterbridge Cancer Centre NHS Foundation Trust, Clatterbridge Road, Bebington, Wirral CH63 4JY (United Kingdom); Manger, S. [Department of Physics, University of Warwick, Coventry CV4 7AL (United Kingdom); Smith, N.A.; Tsurin, I. [Department of Physics, University of Liverpool, Oxford Street, Liverpool L69 7ZE (United Kingdom)

2016-09-21

For many years, silicon micro-strip detectors have been successfully used as tracking detectors for particle and nuclear physics experiments. A new application of this technology is to the field of particle therapy where radiotherapy is carried out by use of charged particles such as protons or carbon ions. Such a treatment has been shown to have advantages over standard x-ray radiotherapy and as a result of this, many new centres offering particle therapy are currently under construction around the world today. The Proton Radiotherapy, Verification and Dosimetry Applications (PRaVDA) consortium are developing instrumentation for particle therapy based upon technology from high-energy physics. The characteristics of a new silicon micro-strip tracker for particle therapy will be presented. The array uses specifically designed, large area sensors with technology choices that follow closely those taken for the ATLAS experiment at the HL-LHC. These detectors will be arranged into four units each with three layers in an x–u–v configuration to be suitable for fast proton tracking with minimal ambiguities. The sensors will form a tracker capable of tracing the path of ~200 MeV protons entering and exiting a patient allowing a new mode of imaging known as proton computed tomography (pCT). This will aid the accurate delivery of treatment doses and in addition, the tracker will also be used to monitor the beam profile and total dose delivered during the high fluences used for treatment. We present here details of the design, construction and assembly of one of the four units that will make up the complete tracker along with its characterisation using radiation tests carried out using a {sup 90}Sr source in the laboratory and a 60 MeV proton beam at the Clatterbridge Cancer Centre.

Modified conductivity of polymer materials with proton beam

International Nuclear Information System (INIS)

Matsumoto, Shinji; Seki, Miharu; Shima, Kunihiro; Ishihara, Toyoyuki

2001-01-01

Ionic conductivity of polymer materials is of increasing interest in many scientific fields. Industrial applications seem to be promising. In the present investigation, we used proton bombardment to modify the characteristic properties of polymers, especially for improvement in conductivity and hardening gel polymers. Particle beam bombardment is known to produce many scissions by particle passages and new bonds by bridge connection. These effects may modify various properties in many ways. We examined the modification of conductivity in solid polymers composed of polyethylene oxide and polyurethane and the surface appearance of gel polymers with bombardment by a proton beam using the accelerator facility of Tsukuba University. The results indicated proton bombardment induced conductivity changes in various ways according to particle range and polymer properties. (author)

Ion beam induces nitridation of silicon

International Nuclear Information System (INIS)

Petravic, M.; Williams, J.S.; Conway, M.

1998-01-01

High dose ion bombardment of silicon with reactive species, such as oxygen and nitrogen, has attracted considerable interest due to possible applications of beam-induced chemical compounds with silicon. For example, high energy oxygen bombardment of Si is now routinely used to form buried oxide layers for device purposes, the so called SIMOX structures. On the other hand, Si nitrides, formed by low energy ( 100 keV) nitrogen beam bombardment of Si, are attractive as oxidation barriers or gate insulators, primarily due to the low diffusivity of many species in Si nitrides. However, little data exists on silicon nitride formation during bombardment and its angle dependence, in particular for N 2 + bombardment in the 10 keV range, which is of interest for analytical techniques such as SIMS. In SIMS, low energy oxygen ions are more commonly used as bombarding species, as oxygen provides stable ion yields and enhances the positive secondary ion yield. Therefore, a large body of data can be found in the literature on oxide formation during low energy oxygen bombardment. Nitrogen bombardment of Si may cause similar effects to oxygen bombardment, as nitrogen and oxygen have similar masses and ranges in Si, show similar sputtering effects and both have the ability to form chemical compounds with Si. In this work we explore this possibility in some detail. We compare oxide and nitride formation during oxygen and nitrogen ion bombardment of Si under similar conditions. Despite the expected similar behaviour, some large differences in compound formation were found. These differences are explained in terms of different atomic diffusivities in oxides and nitrides, film structural differences and thermodynamic properties. (author)

The influence of diffusion of fluorine compounds for silicon lateral etching

Energy Technology Data Exchange (ETDEWEB)

Verdonck, Patrick; Goodyear, Alec; Braithwaite, Nicholas St.John

2004-07-01

In an earlier study, it was proposed that long-range surface transport of fluorine atoms could precede the eventual binding to a silicon atom. The rate of binding increases if the silicon is bombarded with high energy ions. In this study, the lateral etching of a silicon layer, sandwiched between two silicon dioxide layers, was studied in order to investigate and extend these hypotheses. The under etching of the silicon layer was higher for wafers which suffered ion bombardment, showing that this mechanism is important even for horizontal etching. At the same time, the thickness of the silicon layer was varied. In all cases, the thinner silicon layer etched much faster then the thicker layer, indicating that fluorine surface transport is much more important than re-emission for these processes. The etch rate increase with ion bombardment can be explained by the fact that part of the energy of the incoming ions is transferred to the fluorine compounds which are on the horizontal surfaces and that ion bombardment enhances the fluorine surface transport.

Aerosol composition studies using accelerator proton bombardment

International Nuclear Information System (INIS)

Nelson, J.W.; Winchester, J.W.; Akselsson, R.

1974-01-01

The proton beam of the Florida State University Tandem Van de Graaff Accelerator is being used to make quantitative determinations of the composition of particulate matter found in the atmosphere. Proton scattering using 16 MeV incident particle energy is employed to resolve the light elements (up to Cl), while elements Al and heavier are observed via proton induced x-ray emission analysis. In order to realize advantages of these proton excited analyses, specialized techniques are used, such as the use of uniform beams which entirely cover the area of targets of nonuniform areal density. Also, specialized air sampling equipment was built to take advantage of the small size of samples required for proton-induced analyses. The multielement character, ease of automation, and short time (several minutes) needed for analysis make these techniques attractive from the standpoint of analysis cost per sample

Depletion voltage studies on n-in-n MCz silicon diodes after irradiation with 70 MeV protons

CERN Document Server

Holmkvist, William

2014-01-01

Silicon detectors is the main component in the pixel detectors in the ATLAS experiment at CERN in order to detect the particles and recreate their tracks after a proton-proton collision. One criteria on these detectors is to be able to operate in the high radiation field close to the particle collision. The usual behavior of the silicon detectors is that they get type inverted and an increase in the depletion voltage can be seen after exposed to significant amounts of radiation. In contrast n-type Magnetic Czochralski (MCz) silicon doesn’t follow FZ silicons pattern of getting type inverted when it comes to high energy particle irradiation, in the range of GeV. However it was observed that MCz silicon diodes that had been irradiated with 23 MeV protons followed the FZ silicon behavior and did type invert. The aim of the project is to find out how the depletion voltage of MCz silicon changes after being irradiated by 70 MeV at fluencies of 1E13, 1E14 and 5E14 neq/cm2, to give a further insight of at what en...

Anomalous heat evolution of deuteron implanted Al on electron bombardment

International Nuclear Information System (INIS)

Kamada, K.; Kinoshita, H.; Takahashi, H.

1994-05-01

Anomalous heat evolution was observed in deuteron implanted Al foils on 175 keV electron bombardment. Local regions with linear dimension of several 100nm showed simultaneous transformation from single crystalline to polycrystalline structure instantaneously on the electron bombardment, indicating the temperature rise up to more than melting point of Al from room temperature. The amount of energy evolved was more than 180 MeV for each transformed region. The transformation was never observed in proton implanted Al foils. The heat evolution was considered due to a nuclear reaction in D 2 molecular collections. (author)

Experimental determination of the energy loss of protons channeled along the axis thorough a silicon single crystal

International Nuclear Information System (INIS)

Kopta, S.; Hajduk, R.; Lekki, J.; Rajchel, B.; Hrynkiewicz, A.Z.

1988-01-01

Interpretation of the spectra obtained by proton bombardment of Si monocrystal in random and aligned directions has been presented. By the fitting technique applied in the region of resonant backscattering cross section the ratio of channeled to random stopping power has been determined to be β 0 = 0.46 -0.03 +0.02 . 13 refs., 4 figs. (author)

On the modeling of irradiation-induced homogeneous precipitation in proton-bombarded Ni-Si solid solutions

Science.gov (United States)

Lam, Nghi Q.; Janghorban, K.; Ardell, A. J.

1981-10-01

Irradiation-induced solute redistribution leading to precipitation of coherent γ' particles in undersaturated Ni-based solid solutions containing 6 and 8 at.% Si during 400-keV proton bombardment was modeled, based on the concept of solute segregation in concentrated alloys under spatially-dependent defect production conditions. The combined effects of (i) an extremely large difference between the defect production rates in the peak-damage and mid-range regions during irradiation and (ii) a preferential coupling between the interstitial and solute fluxes generate a net transient flux of Si atoms into the mid-range region, which is much larger than the solute flux out of this location. As a result, the Si concentration exceeds the solubility limit and homogeneous precipitation of the γ' phase occurs in this particular region of the irradiated samples. The spatial, compositional and temperature dependences of irradiation-induced homogeneous precipitation derived from the present theoretical calculations are in good qualitative agreement with experimental observations

Effects of low and high energy ion bombardment on ETFE polymer

Science.gov (United States)

Minamisawa, R. A.; De Almeida, A.; Abidzina, V.; Parada, M. A.; Muntele, I.; Ila, D.

2007-04-01

The polymer ethylenetetrafluoroethylene (ETFE) is used as anti-adherent coatings for food packages and radiation dosimeters. In this work, we compare the damage induced in ETFE bombarded with 100 keV Si ions with that induced by 1 MeV proton bombardment. The damage depends on the type, energy and intensity of the irradiation. Irradiated films were analyzed with optical absorption photospectrometry, Raman spectroscopy and Fourier transform infrared (FTIR) spectroscopy to determine the chemical nature of the structural changes caused by ion irradiation. Computer simulations were performed to evaluate the radiation damage.

Scanning of irradiated silicon detectors using $\\alpha$ particles and low energy protons

CERN Document Server

Casse, G L; Glaser, M; Kohout, Z; Konícek, J; Lemeilleur, F; Leroy, C; Linhart, V; Mares, J J; Pospísil, S; Roy, P; Sopko, B; Sinor, M; Svejda, J; Vorobel, V; Wilhelm, I

1999-01-01

In a spectroscopic study of non-irradiated and proton-irradiated silicon diodes, the detectors were illuminated from the front side and from the rear side by various alpha particle sources (mainly ThC') and by monoenergetic protons with energies from 1.0 to 2.5~MeV. Their response characteristics have been studied as a function of the incoming particle energy and the applied bias voltage. The charge collection efficiency was determined as a function of fluence

Comparison of secondary ion emission induced in silicon oxide by MeV and KeV ion bombardment

International Nuclear Information System (INIS)

Allali, H.; Nsouli, B.; Thomas, J.P.; Szymczak, W.; Wittmaack, K.

1993-09-01

The surface and near-surface composition of SiO 2 layers, has been investigated by negative secondary ion emission mass spectrometry (SIMS) using MeV and KeV ion bombardment in combination with time-of-flight (TOF) mass analysis. The spectra recorded in the mass range 0-100 u are dominated by surface impurities, notably hydrocarbons and silicon polyanions incorporating H and OH entities. The characteristic (fragmentation) patterns are quite different for light and high-velocity ion impact. In high-velocity TOF-SIMS analysis of P-doped layers, prepared by chemical vapour deposition (CVD), the mass lines at 63 and 79 u are very prominent and appear to correlate with the phosphorus concentration (PO 2 and PO 3 , respectively). It is shown, however, that for unambiguous P analysis one has to use dynamic SIMS or high mass resolution. (author) 11 refs., 5 figs

Simultaneous electron-proton irradiation of crucible grown and float-zone silicon solar cells

International Nuclear Information System (INIS)

Bernard, J.

1974-01-01

The realisation of an irradiation chamber which permits simultaneous irradiations by electrons, protons, photons and in-situ measurements of solar cells main parameters (diffusion length, I.V. characteristics) is described. Results obtained on 20 solar cells n/p 10Ωcm made in silicon pulled crystals and 20 solar cells n/p 10Ωcm made in silicon float-zone simultaneously irradiated with electrons and photons are given [fr

Measurements of neutron spectra produced from a thick tungsten target bombarded with 5 and 15 GeV protons

CERN Document Server

Meigo, S; Shigyo, N; Iga, K; Iwamoto, Y; Kitsuki, H; Ishibashi, K; Maehata, K; Arima, H; Nakamo, T; Numajiri, M

2002-01-01

For validation of calculation codes that are employed in the design of a pulse spallation neutron source and accelerator driven system, the spectrum of neutrons produced from a thick target plays an important role. However, appropriate experimental data were scarce for incident energies higher than 0.8 GeV. In this study, the spectrum from a thick tungsten target was measured. The experiment was carried out at the pi 2 beam line of the 12-GeV proton synchrotron at KEK. The tungsten target was bombarded by 0.5- and 1.5-GeV secondary protons. The spectrum of neutrons was measured by the time-of-flight technique using organic scintillators of NE213. The calculated result with NMTC/JAM and MCNP-4A is compared with the measured data. It is found that the NMTC/JAM generally gives a good agreement with experiment. The NMTC/JAM, however, gives 50% lower neutron flux in the energy region 20~80 MeV, which is consistent with the results in a previous comparison of a lead target. For the neutrons between 20 and 80 MeV, t...

Nanogranular SiO{sub 2} proton gated silicon layer transistor mimicking biological synapses

Energy Technology Data Exchange (ETDEWEB)

Liu, M. J.; Huang, G. S., E-mail: gshuang@fudan.edu.cn, E-mail: pfeng@nju.edu.cn; Guo, Q. L.; Tian, Z. A.; Li, G. J.; Mei, Y. F. [Department of Materials Science, Fudan University, Shanghai 200433 (China); Feng, P., E-mail: gshuang@fudan.edu.cn, E-mail: pfeng@nju.edu.cn; Shao, F.; Wan, Q. [School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093 (China)

2016-06-20

Silicon on insulator (SOI)-based transistors gated by nanogranular SiO{sub 2} proton conducting electrolytes were fabricated to mimic synapse behaviors. This SOI-based device has both top proton gate and bottom buried oxide gate. Electrical transfer properties of top proton gate show hysteresis curves different from those of bottom gate, and therefore, excitatory post-synaptic current and paired pulse facilitation (PPF) behavior of biological synapses are mimicked. Moreover, we noticed that PPF index can be effectively tuned by the spike interval applied on the top proton gate. Synaptic behaviors and functions, like short-term memory, and its properties are also experimentally demonstrated in our device. Such SOI-based electronic synapses are promising for building neuromorphic systems.

Performance Test Results of a Single-sided Silicon Strip Detector with a Radioactive Source and a Proton Beam

International Nuclear Information System (INIS)

Ki, Y. I.; Kah, D. H.; Son, D. H.; Kang, H. D.; Kim, H. J.; Kim, H. O.; Bae, J. B.; Ryu, S.; Park, H.; Kim, K. R.

2007-01-01

Due to high intrinsic precision and high speed properties of a silicon material, the silicon detector has been used in various applications such as medical imaging detector, radiation detector, positioning detectors in space science and experimental particle physics. High technology, modern equipment, and deep expertise are required to design and fabricate good quality of silicon sensors. Only few facilities in the world can develop silicon sensors which meet requirements of sensor performances. That is one of main reasons that the silicon sensor is so expensive and it takes time to purchase the silicon sensor once it is ordered. We designed and fabricated AC-coupled single-sided silicon strip sensors and developed front-end electronics and DAQ system to read out sensor signals. The silicon strip sensors were fabricated on a 5-in. n-type silicon wafer which has an orientation, high resistivity (>5 kΩ · cm) and a thickness of 380 μm. We measured the signal-to-noise ratio (SNR) of each channel by using a radioactive source and a 45 MeV proton beam from the MC-50 cyclotron at the Korea Institute of Radiological and Medical Science (KIRAMS) in Seoul. We present the measurement results of the SNRs of the silicon strip sensor with a proton beam and radioactive sources

Optical spectroscopy of vacancy related defects in silicon carbide generated by proton irradiation

Energy Technology Data Exchange (ETDEWEB)

Kasper, C.; Sperlich, A.; Simin, D.; Astakhov, G.V. [Experimental Physics VI, Julius Maximilian University of Wuerzburg (Germany); Kraus, H. [Japan Atomic EnergyAgency, Takasaki, Gunma (Japan); Experimental Physics VI, Julius Maximilian University of Wuerzburg (Germany); Makino, T.; Sato, S.I.; Ohshima, T. [Japan Atomic EnergyAgency, Takasaki, Gunma (Japan); Dyakonov, V. [Experimental Physics VI, Julius Maximilian University of Wuerzburg (Germany); ZAE Bayern, Wuerzburg (Germany)

2016-07-01

Defects in silicon carbide (SiC) received growing attention in recent years, because they are promising candidates for spin based quantum information processing. In this study we examine silicon vacancies in 4H-SiC crystals generated by proton irradiation. By the use of confocal microscopy the implantation depth of Si vacancies for varying proton energies can be verified. An important issue is to ascertain the nature and distribution of the defects. For this purpose, we use the characteristic photoluminescence spectrum of Si vacancies, whose intensity is proportional to the defect density. Using xyz-scans, where the photoluminescence at each mapping point is recorded, one can thus determine the vacancies nature and their distribution in the SiC crystal. Additionally we verify the nature of the examined defects by measuring their uniquely defined zero-field-splitting by using ODMR associated with defect spins.

Nafion/Silicon Oxide Composite Membrane for High Temperature Proton Exchange Membrane Fuel Cell

Institute of Scientific and Technical Information of China (English)

无

2007-01-01

Nafion/Silicon oxide composite membranes were produced via in situ sol-gel reaction of tetraethylorthosilicate (TEOS) in Nafion membranes. The physicochemical properties of the membranes were studied by FT-IR, TG-DSC and tensile strength. The results show that the silicon oxide is compatible with the Nafion membrane and the thermo stability of Nafion/Silicon oxide composite membrane is higher than that of Nafion membrane. Furthermore, the tensile strength of Nafion/Silicon oxide composite membrane is similar to that of the Nafion membrane. The proton conductivity of Nafion/Silicon oxide composite membrane is higher than that of Nafion membrane. When the Nafion/Silicon oxide composite membrane was employed as an electrolyte in H2/O2 PEMFC, a higher current density value (1 000 mA/cm2 at 0.38 V) than that of the Nafion 1135 membrane (100 mA/cm2 at 0.04 V) was obtained at 110 ℃.

Studies of radiation damage in silicon sensors and a measurement of the inelastic proton--proton cross-section at 13 TeV

CERN Document Server

AUTHOR|(INSPIRE)INSPIRE-00360674; Ward, Patricia

This thesis presents studies of radiation damage in silicon sensors for the new ATLAS tracker at the high-luminosity LHC, calibrations of the LHC luminosity scale, and a measurement of the proton--proton inelastic cross-section at 13 TeV~with ATLAS data. The studies of radiation damage are performed by comparing sensor performance before and after irradiation, and include annealing studies. The measured quantities include: leakage current, depletion depth, inter-strip isolation, and charge collection. Surface and bulk damage is studied by comparing the results of sensors irradiated with protons and neutrons. The observed degradation of performance suggests the current sensor design will endure the radiation damage expected over the lifetime of the experiment at the high-luminosity LHC. The luminosity is calibrated for the proton--proton, proton--lead, and lead--lead collisions delivered by the LHC during 2013 and 2015. The absolute luminosity scale is derived with the van der Meer method. The systematic unc...

Using short silicon crystals for beam extraction and collimation at U-70 proton synchrotron

International Nuclear Information System (INIS)

Afonin, A.G.; Baranov, V.T.; Biryukov, V.M.; Kotov, V.I.; Maisheev, V.A.; Terekhov, V.I.; Troyanov, E.F.; Fedotov, Yu.S.; Chepegin, V.N.; Chesnonkov, Yu.A.

2002-01-01

Results of investigations into escape and collimation of proton beams at the IHEP U-70 synchrotron with the application of short flexed silicon monocrystals in length 2 - 4 mm are demonstrated. Good agreement between the measured and calculated efficiency of the flexed crystal is available. Lowering efficiency with the decreasing proton energy is explained by growth of root-mean-square angle of the multiple Coulomb scattering and drop of dechanneling length [ru

Facies of ion bombarded surfaces of brittle materials

International Nuclear Information System (INIS)

Primak, W.

1975-12-01

Materials were bombarded by protons, deuterons, and helium ions. The materials investigated were quartz; glasses; carbides and borides (SiC, B 4 C, TiB 2 ); oxides and nitrides (magnorite, sapphire, spinel, Al 2 O 3 , Si 3 N 4 , ZrO 2 , BaTiO 3 ); and miscellaneous (graphite, LiNbO 3 , copper). Oberservations were of growth, reflectivity, blistering, surface ablation, and swelling. Calculations were made of the effects of a layer, of its gradual transformation, and of the introduction of a gas. It is concluded that: Radiation blistering is not a primary process. Observations of blister formation and exfoliation cannot be used to calculate the surface ablation rate. The primary process is the development of a microporous layer which causes swelling. Visible blisters are caused by fracturing by transverse stresses in this layer and may occur during the bombardment, or in some cases, much later, in storage. There is no evidence of extreme gas pressures in the blisters. When blisters develop, they may be stable under continued bombardment for a dose many times that at which they formed. The swelling is a better index of the effects than is the blistering, and must be associated in most cases with permeability to the gas. Behavior with protons and deuterons is similar, with helium different. All but quartz, vitreous silica, and Pyrex are impervious to hydrogen and deuterium; only dense barium crown glass, carbides, borides, oxides, and nitrides are impervious to helium. Quartz shows swelling caused by conversion to a vitreous product of much lower density but no porosity, while for the others, most of the swelling and surface growth is caused by porosity. Surface ablation by the blistering process may be reduced by initial porosity or by initial or subsequent surface fissuring. However, for impervious materials, surface damage by the introduction of porosity would continue

Measurement of activation reaction rate distributions in a lead assembly bombarded with 500-MeV protons

CERN Document Server

Takada, H; Sasa, T; Tsujimoto, K; Yasuda, H

2000-01-01

Reaction rate distributions of various activation detectors such as the /sup nat/Ni(n, x)/sup 58/Co, /sup 197/Au(n,2n)/sup 196/Au, and /sup 197/Au(n,4n)/sup 194/Au reactions were measured to study the production and the transport of spallation neutrons in a lead assembly bombarded with protons of 500 MeV. The measured data were analyzed with the nucleon-meson transport code NMTC/JAERI combined with the MCNP4A code using the nuclide production cross sections based on the JENDL Dosimetry File and those calculated with the ALICE-F code. It was found that the NMTC/JAERI-MCNP4A calculations agreed well with the experiments for the low-energy-threshold reaction of /sup nat/Ni(n, x)/sup 58/Co. With the increase of threshold energy, however, the calculation underestimated the experiments, especially above 20 MeV. The reason for the disagreement can be attributed to the underestimation of the neutron yield in the tens of mega-electron-volt regions by the NMTC/JAERI code. (32 refs).

Measurements of neutron spectra produced from a thick tungsten target bombarded with 0.5- and 1.5-GeV protons

International Nuclear Information System (INIS)

Meigo, Shin-ichiro; Takada, Hiroshi

2002-01-01

For validation of calculation codes that are employed in the design of pulse spallation neutron source and accelerator driven system, spectrum of neutrons produced from a thick target plays an important role. However, appropriate experimental data were scarce for the incident energies higher than 0.8 GeV. In this study, the spectrum from a thick tungsten target was measured. The experiment was carried out at the π2 beam line of the 12-GeV proton synchrotron at KEK. The tungsten target was bombarded by the 0.5- and 1.5-GeV secondary protons. Spectrum of neutrons was measured by the time-of-flight technique using organic scintillators of NE213. The calculated result with NMTC/JAM and MCNP-4A is compared with the measured data. It is found that the NMTC/JAM generally gives a good agreement with experiment. The NMTC/JAM, however, gives 50% lower neutron flux in the energy region 20∼80 MeV, which is consistent with the results in previous comparison of lead target. For the neutrons between 20 and 80 MeV, the calculation using with the in-medium nucleon-nucleon cross sections reproduced the experiment fairly well. (author)

Measurements of spallation neutrons from a thick lead target bombarded with 0.5 and 1.5 GeV protons

Energy Technology Data Exchange (ETDEWEB)

Meigo, Shin-ichiro; Takada, Hiroshi; Chiba, Satoshi [Japan Atomic Energy Research Inst., Tokai, Ibaraki (Japan). Tokai Research Establishment] [and others

1997-03-01

Double differential neutron spectra from a thick lead target bombarded with 0.5 and 1.5 GeV protons have been measured with the time-of-flight technique. In order to obtain the neutron spectra without the effect of the flight time fluctuation by neutron scattering in the target, an unfolding technique has also been employed in the low energy region below 3 MeV. The measured data have been compared with the calculated results of NMTC/JAERI-MCNP-4A code system. It has been found that the code system gives about 50 % lower neutron yield than the experimental ones in the energy region between 20 and 80 MeV for both incident energies. The disagreements, however, have been improved well by taking account of the inmedium nucleon-nucleon scattering cross sections in the NMTC/JAERI code. (author)

Measurement and Simulation of the Variation in Proton-Induced Energy Deposition in Large Silicon Diode Arrays

Science.gov (United States)

Howe, Christina L.; Weller, Robert A.; Reed, Robert A.; Sierawski, Brian D.; Marshall, Paul W.; Marshall, Cheryl J.; Mendenhall, Marcus H.; Schrimpf, Ronald D.

2007-01-01

The proton induced charge deposition in a well characterized silicon P-i-N focal plane array is analyzed with Monte Carlo based simulations. These simulations include all physical processes, together with pile up, to accurately describe the experimental data. Simulation results reveal important high energy events not easily detected through experiment due to low statistics. The effects of each physical mechanism on the device response is shown for a single proton energy as well as a full proton space flux.

Comparison of proton microbeam and gamma irradiation for the radiation hardness testing of silicon PIN diodes

Science.gov (United States)

Jakšić, M.; Grilj, V.; Skukan, N.; Majer, M.; Jung, H. K.; Kim, J. Y.; Lee, N. H.

2013-09-01

Simple and cost-effective solutions using Si PIN diodes as detectors are presently utilized in various radiation-related applications in which excessive exposure to radiation degrades their charge transport properties. One of the conventional methods for the radiation hardness testing of such devices is time-consuming irradiation with electron beam or gamma-ray irradiation facilities, high-energy proton accelerators, or with neutrons from research reactors. Recently, for the purpose of radiation hardness testing, a much faster nuclear microprobe based approach utilizing proton irradiation has been developed. To compare the two different irradiation techniques, silicon PIN diodes have been irradiated with a Co-60 gamma radiation source and with a 6 MeV proton microbeam. The signal degradation in the silicon PIN diodes for both irradiation conditions has been probed by the IBIC (ion beam induced charge) technique, which can precisely monitor changes in charge collection efficiency. The results presented are reviewed on the basis of displacement damage calculations and NIEL (non-ionizing energy loss) concept.

Low surface damage dry etched black silicon

DEFF Research Database (Denmark)

Plakhotnyuk, Maksym M.; Gaudig, Maria; Davidsen, Rasmus Schmidt

2017-01-01

Black silicon (bSi) is promising for integration into silicon solar cell fabrication flow due to its excellent light trapping and low reflectance, and a continuously improving passivation. However, intensive ion bombardment during the reactive ion etching used to fabricate bSi induces surface dam...

Cross sections for pion, proton, and heavy-ion production from 800 MeV protons incident upon aluminum and silicon

Energy Technology Data Exchange (ETDEWEB)

Dicello, J.F. (Clarkson Univ., Potsdam, NY (USA)); Schillaci, M.E.; Liu Lonchang (Los Alamos National Lab., NM (USA))

1990-01-01

When high-energy cosmic rays interact with electronics or other materials in a spacecraft, including the occupants themselves, pions are produced as secondary particles. These secondary pions interact further in the materials producing nuclear secondaries, including nuclear recoils and heavy-ion tertiaries. The secondary pions and the the tertiary particles are capable of producing single-event upsets and other damage in integrated circuits and damage in biological systems. Negative pions stopping in materials are particularly effective because of their unique ability to produce short-range heavy particles from pion stars. With the Los Alamos National Laboratory's version of the intranuclear cascade evaporation code, VEGAS, we have calculated the number of pions produced per energy interval per incident proton from 800 MeV protons on aluminum-27 and silicon-28 along with corresponding results for neutrons, protons, and heavier ions. (orig.).

Analysis of the AGS experiment on a mercury target with a moderator and a lead reflector bombarded by GeV energy protons

International Nuclear Information System (INIS)

Maekawa, Fujio; Meigo, Shin-ichiro; Kasugai, Yoshimi; Takada, Hiroshi; Ikeda, Yujiro; Ino, Takashi; Sato, Setsuo

2001-01-01

The AGS experiment on a mercury target with a moderator and a lead reflector bombarded by GeV energy protons was analyzed to investigate prediction capability of Monte Carlo simulation codes used in neutronic designs of spallation neutron sources. The NMTC/JAM code was used for nucleon meson transport calculations above 20 MeV while the MCNP-4A code with the JENDL cross section library was used for neutron transport below 20 MeV. The MCNPX code with the LA-150 library was also used for a reference. The calculations were compared with the experimental data obtained with 1.94, 12 and 24 GeV proton beams: (1) neutron flux distributions along the mercury target and (2) spectral fluxes of thermal neutrons extracted from a light water moderator. As a result, it was found that all the calculations predicted these experimental results with accuracies better than ±50% in absolute values. Accordingly, it was concluded that these calculation codes were adequate for neutronics designs of spallation neutron sources. (author)

A Method to Simulate the Observed Surface Properties of Proton Irradiated Silicon Strip Sensors

CERN Document Server

INSPIRE-00335524; Bhardwaj, A.; Dalal, R.; Eber, R.; Eichhorn, T.; Lalwani, K.; Messineo, A.; Printz, M.; Ranjan, K.

2015-04-23

During the scheduled high luminosity upgrade of LHC, the world's largest particle physics accelerator at CERN, the position sensitive silicon detectors installed in the vertex and tracking part of the CMS experiment will face more intense radiation environment than the present system was designed for. To upgrade the tracker to required performance level, extensive measurements and simulations studies have already been carried out. A defect model of Synopsys Sentaurus TCAD simulation package for the bulk properties of proton irradiated devices has been producing simulations closely matching with measurements of silicon strip detectors. However, the model does not provide expected behavior due to the fluence increased surface damage. The solution requires an approach that does not affect the accurate bulk properties produced by the proton model, but only adds to it the required radiation induced properties close to the surface. These include the observed position dependency of the strip detector's charge collec...

MeV ion induced damage production and accumulation in silicon

International Nuclear Information System (INIS)

Suzuki, Motoyuki; Okazaki, Makoto; Shin, Kazuo; Takagi, Ikuji; Yoshida, Koji

1993-01-01

Measurement and analysis were made for radiation damages in silicon induced by MeV ions. A single crystal silicon was bombarded by 800 keV O + and 700 keV Si + with the dose from 2x10 15 up to 8x10 15 cm -2 . And defects induced by the ion bombardments were observed by the channeling method. Some new modifications were made to the analysis of the channeling RBS spectrum so that the accuracy of the unfolded defect distribution may be improved. A new model of point-defect clustering and amorphous formation was proposed, which well reproduced the observed defect distribution in silicon. (author)

Proton-irradiation technology for high-frequency high-current silicon welding diode manufacturing

Science.gov (United States)

Lagov, P. B.; Drenin, A. S.; Zinoviev, M. A.

2017-05-01

Different proton irradiation regimes were tested to provide more than 20 kHz-frequency, soft reverse recovery “snap-less” behavior, low forward voltage drop and leakage current for 50 mm diameter 7 kA/400 V welding diode Al/Si/Mo structure. Silicon diode with such parameters is very suitable for high frequency resistance welding machines of new generation for robotic welding.

Degradation of the photoluminescence of porous silicon caused by 60Co γ radiation

International Nuclear Information System (INIS)

Astrova, E.V.; Emtsev, V.V.; Lebedev, A.A.

1995-01-01

Two series of experiments were carried out. In the first, as-grown porous silicon was bombarded with 60 Co γ radiation to a dose ∼ 10 20 cm -2 . The photoluminescence intensity fell off by a factor ∼ 50 as a result, although the peak of the band underwent essentially no shift. In the second series, single-crystal silicon was bombarded to the same dose, and then porous silicon was fabricated on it. The intensity and spectra of these samples were the same as usual. Possible degradation mechanisms are discussed. 12 refs., 2 figs

A Method to Simulate the Observed Surface Properties of Proton Irradiated Silicon Strip Sensors

CERN Document Server

Peltola, Timo Hannu Tapani

2014-01-01

A defect model of Synopsys Sentaurus TCAD simulation package for the bulk properties of proton irradiated devices has been producing simulations closely matching to measurements of silicon strip detectors. However, the model does not provide the expected behavior due to the fluence increased surface damage. The solution requires an approach that does not affect the accurate bulk properties produced by the proton model, but only adds to it the required radiation induced properties close to the surface. These include the observed position dependency of the strip detector's...

High-Efficiency Volume Reflection of an Ultrarelativistic Proton Beam with a Bent Silicon Crystal

CERN Document Server

Scandale, Walter; Carnera, Alberto; Della Mea, Gianantonio; De Salvador, Davide; Milan, Riccardo; Vomiero, Alberto; Baricordi, Stefano; Dalpiaz, Pietro; Fiorini, Massimiliano; Guidi, Vincenzo; Martinelli,Giuliano; Mazzolari, Andrea; Milan, Emiliano; Ambrosi, Giovanni; Azzarello, Philipp; Battiston, Roberto; Bertucci, Bruna; Burger, William J; Ionica, Maria; Zuccon, Paolo; Cavoto, Gianluca; Santacesaria, Roberta; Valente, Paolo; Vallazza, Erik; Afonin, Alexander G; Baranov, Vladimir T; Chesnokov, Yury A; Kotov, Vladilen I; Maisheev, Vladimir A; Yaznin, Igor A; Afansiev, Sergey V; Kovalenko, Alexander D; Taratin, Alexander M; Denisov, Alexander S; Gavrikov, Yury A; Ivanov, Yuri M; Ivochkin, Vladimir G; Kosyanenko, Sergey V; Petrunin, Anatoli A; Skorobogatov, Vyacheslav V; Suvorov, Vsevolod M; Bolognini, Davide; Foggetta,Luca; Hasan, Said; Prest, Michela

2007-01-01

The volume reflection phenomenon was detected while investigating 400 GeV proton interactions with bent silicon crystals in the external beam H8 of the CERN Super Proton Synchrotron. Such a process was observed for a wide interval of crystal orientations relative to the beam axis, and its efficiency exceeds 95%, thereby surpassing any previously observed value. These observations suggest new perspectives for the manipulation of high-energy beams, e.g., for collimation and extraction in new-generation hadron colliders, such as the CERN Large Hadron Collider.

Low-temperature positron-lifetime studies of proton-irradiated silicon

DEFF Research Database (Denmark)

Mäkinen, S.; Rajainmäki, H.; Linderoth, Søren

1990-01-01

The positron-lifetime technique has been used to identify defects created in high-purity single-crystal silicon by irradiation with 12-MeV protons at 15 K, and the evolution of the defects has been studied by subsequent annealings between 20 and 650 K. Two clear annealing steps were seen...... in the samples, the first starting at 100 K and the other at 400 K. The first is suggested to be a result of the migration of free, negatively charged monovacancies, and the second is connected to the annealing of some vacancy-impurity complexes, probably negatively charged vacancy-oxygen pairs. The specific...

Observation of Multiple Volume Reflection of Ultrarelativistic Protons by a Sequence of Several Bent Silicon Crystals

CERN Document Server

Scandale, Walter; Baricordi, S; Dalpiaz, P; Fiorini, M; Guidi, V; Mazzolari, A; Della Mea, G; Milan, R; Ambrosi, G; Zuccon, P; Bertucci, B; Bürger, W; Duranti, M; Cavoto, G; Santacesaria, R; Valente, P; Luci, C; Iacoangeli, F; Vallazza, E; Afonin, A G; Chesnokov, Yu A; Kotov, V I; Maisheev, V A; Yazynin, I A; Kovalenko, A D; Taratin, A M; Denisov, A S; Gavrikov, Y A; Ivanov, Yu M; Lapina, L P; Malyarenko, L G; Skorogobogatov, V V; Suvorov, V M; Vavilov, S A; Bolognini, D; Hasan, S; Mozzanica, A; Prest, M

2009-01-01

The interactions of 400 GeV protons with different sequences of bent silicon crystals have been investigated at the H8 beam line of the CERN Super Proton Synchrotron. The multiple volume reflection of the proton beam has been studied in detail on a five-crystal reflector measuring an angular beam deflection =52.96±0.14 µrad. The efficiency was found larger than 80% for an angular acceptance at the reflector entrance of 70 µrad, with a maximal efficiency value of =0.90±0.01±0.03.

Anomalous effects in silicon solar cell irradiated by 1-MeV protons

Science.gov (United States)

Kachare, R.; Anspaugh, B. E.

1989-01-01

Several silicon solar cells having thicknesses of approximately 63 microns, with and without back-surface fields (BSF), were irradiated with 1-MeV protons having fluences between 10 to the 10th and 10 to the 12th sq cm. The irradiations were performed using both normal and isotropic incidence on the rear surfaces of the cells. It was observed that after irradiation with fluences greater than 10 to the 11th protons/sq cm, all BSF cells degraded at a faster rate than cells without BSF. The irradiation results are analyzed using a model in which irradiation-induced defects in the BSF region are taken into account. Tentatively, it is concluded that an increase in defect density due to the formation of aluminum and proton complexes in BSF cells is responsible for the higher-power loss in the BSF cells compared to the non-BSF cells.

Secondary ion emission from metal surfaces bombarded by 0.5-10 keV protons and hydrogens

International Nuclear Information System (INIS)

Kitamura, Akira; Yano, Syukuro

1978-01-01

Secondary ion emission coefficients by bombardment of 0.5 - 10 keV protons K 11 and atomic hydrogens K 01 on copper, stainless steel, molybdenum and evaporated gold surfaces have been measured in a moderate vacuum. Results are summarized as follows; 1) There is no significant difference between K 11 and K 01 . 2) Differences in K 11 and K 11 between different samples of the same material and between the sample before baking-out and the same sample after baking-out are of the order of several tens of percent. 3) The incident particle energy E sub(max) at which K 11 and K 01 have the maximum value lies in the keV region, and increases with the target mass. According to the fact that E sub(max) differs substantially from the energy at which the elastic stopping power has the maximum value, a characteristic length l is introduced and calculated to be of the order of hundreds of A; the factor exp (-x/l) represents the degree of contribution of collision at depth x to K 11 or K 01 . (author)

Proton-irradiation technology for high-frequency high-current silicon welding diode manufacturing

International Nuclear Information System (INIS)

Lagov, P B; Drenin, A S; Zinoviev, M A

2017-01-01

Different proton irradiation regimes were tested to provide more than 20 kHz-frequency, soft reverse recovery “snap-less” behavior, low forward voltage drop and leakage current for 50 mm diameter 7 kA/400 V welding diode Al/Si/Mo structure. Silicon diode with such parameters is very suitable for high frequency resistance welding machines of new generation for robotic welding. (paper)

Impact of irradiations by protons with different energies on silicon sensors

International Nuclear Information System (INIS)

Neubueser, Coralie

2013-06-01

In the frame of the CMS tracker upgrade campaign the radiation damage of oxygenrich n-type silicon pad diodes induced by 23 MeV and 23 GeV protons was investigated. The diodes were manufactured by Hamamatsu Photonics. After irradiation with 1 MeV neutron equivalent fluences between 1 x 10 11 cm -2 and 1.5 x 10 15 cm -2 , the sensors were electrically characterized by means of capacitance-voltage (CV) and current-voltage (IV) measurements. Current pulses recorded by the Transient Current Technique (TCT) and Charge Collection Efficiency (CCE) measurements show a dependence of the bulk damage on the proton energy. At a fluence of Φ eq ∼3 x 10 14 cm -2 oxygen-rich n-type diodes demonstrate clear Space Charge Sign Inversion (SCSI) after 23 MeV proton irradiation. This effect does not appear after the irradiation with 23 GeV protons. Moreover, RD50 pad diodes were irradiated with 23 MeV protons, electrically characterized and compared to results obtained after 23 GeV irradiations. Our previous observation on the energy dependence of the radiation damage could be confirmed. In order to get a deeper understanding of the differences of the radiation induced defects, the Deep Level Transient Spectroscopy (DLTS) and Thermally Stimulated Current Technique (TSC) were utilized. Defects with impact on the space charge could be identified and characterized and it was possible to find some hints for the reason of the SCSI after 23 MeV proton irradiation. Moreover, a dependence on the oxygen concentration of the sensors could be observed.

Simulation of the proton implantation process in silicon

Energy Technology Data Exchange (ETDEWEB)

Faccinelli, Martin; Hadley, Peter [Graz University of Technology, Institute of Solid State Physics (Austria); Jelinek, Moriz; Wuebben, Thomas [Infineon Technologies Austria AG, Villach (Austria); Laven, Johannes G.; Schulze, Hans-Joachim [Infineon Technologies AG, Neubiberg (Germany)

2016-12-15

Proton implantation is one of many processes used to ad-just the electronic and mechanical properties of silicon. Though the process has been extensively studied, it is still not clear which exact defects are formed and what their concentration profiles are. In this article, a simulation method is presented, which provides a better understanding of the implantation process. The simulation takes into account the diffusion of mobile point defects and their reactions to defect complexes, as well as the dissociation of defect complexes. Concentration profiles for a set of defect complexes after an implantation at 400 keV and a dose of 5 x 10{sup 14} H{sup +}cm{sup -2} are presented. (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

A simulation of low energy channeling of protons in silicon

International Nuclear Information System (INIS)

Sabin, J.R.

1994-01-01

The authors present early results from the CHANNEL code, which simulates the passage of ionized projectiles through bulk solids. CHANNEL solves the classical equations of motion for the projectile using the force obtained from the gradient of the quantum mechanically derived coulombic potential of the solid (determined via a full potential augmented plane wave FLAPW calculation on the bulk) and a quantum mechanical energy dissipation term, the stopping power, as determined from the local electron density, using the method of Echenique, Nieminen, and Ritchie. The code then generates the trajectory of the ionic projectile for a given initial velocity and a given incident position on the unit cell face. For each incident projectile velocity, the authors generate trajectories for incidence distributed over the channel face. The distribution of ranges generates an implantation profile. In this paper, they report ion (proton) implantation profiles for low energy protons with initial velocity along the (100) and (110) channel directions of diamond structured Silicon

Test of superconducting radio-frequency cavity bombarded by protons

Science.gov (United States)

O'Donnell, J. M.; McCloud, B. J.; Morris, C. L.; McClelland, J. B.; Rusnak, B.; Thiessen, H. A.; Langenbrunner, J. L.

1992-05-01

A beam of 2 × 10 10 protons/s was focused onto a small area on the high-field iris of a superconducting cavity operating at the resonance frequency. The input, reflected, and stored power were monitored. The cavity remained in steady state during this test. We conclude that such superconducting cavities will remain viable in the high-proton-flux environments proposed in the design of a superconducting accelerator for pions (PILAC).

Test of superconducting radio-frequency cavity bombarded by protons

Energy Technology Data Exchange (ETDEWEB)

O' Donnell, J.M.; McCloud, B.J.; Morris, C.L.; McClelland, J.B.; Rusnak, B.; Thiessen, H.A. (Los Alamos National Lab., NM (United States)); Langenbrunner, J.L. (Dept. of Physics and Astronomy, Univ. Minnesota, Minneapolis, MN (United States))

1992-05-10

A beam of 2x10{sup 10} protons/s was focused onto a small area on the high-field iris of a superconducting cavity operating at the resonance frequency. The input, reflected, and stored power were monitored. The cavity remained in steady state during this test. We conclude that such superconducting cavities will remain viable in the high-proton-flux environments proposed in the design of a superconducting accelerator for pions (PILAC). (orig.).

Impact of irradiations by protons with different energies on silicon sensors

Energy Technology Data Exchange (ETDEWEB)

Neubueser, Coralie

2013-06-15

In the frame of the CMS tracker upgrade campaign the radiation damage of oxygenrich n-type silicon pad diodes induced by 23 MeV and 23 GeV protons was investigated. The diodes were manufactured by Hamamatsu Photonics. After irradiation with 1 MeV neutron equivalent fluences between 1 x 10{sup 11} cm{sup -2} and 1.5 x 10{sup 15} cm{sup -2}, the sensors were electrically characterized by means of capacitance-voltage (CV) and current-voltage (IV) measurements. Current pulses recorded by the Transient Current Technique (TCT) and Charge Collection Efficiency (CCE) measurements show a dependence of the bulk damage on the proton energy. At a fluence of {Phi}{sub eq}{approx}3 x 10{sup 14} cm{sup -2} oxygen-rich n-type diodes demonstrate clear Space Charge Sign Inversion (SCSI) after 23 MeV proton irradiation. This effect does not appear after the irradiation with 23 GeV protons. Moreover, RD50 pad diodes were irradiated with 23 MeV protons, electrically characterized and compared to results obtained after 23 GeV irradiations. Our previous observation on the energy dependence of the radiation damage could be confirmed. In order to get a deeper understanding of the differences of the radiation induced defects, the Deep Level Transient Spectroscopy (DLTS) and Thermally Stimulated Current Technique (TSC) were utilized. Defects with impact on the space charge could be identified and characterized and it was possible to find some hints for the reason of the SCSI after 23 MeV proton irradiation. Moreover, a dependence on the oxygen concentration of the sensors could be observed.

Silicon hydride nanocrystals as catalysts for proton production in water-organic liquid mixtures

KAUST Repository

Chaieb, Sahraoui

2014-08-05

Embodiments of the present methods may be used to produce energy in the form of an electrical current from water without the use of fossil fuel. Silicon hydride is very easy to make. This procedure in conjunction with an enzyme to produce hydrogen gas for fuel cells and other small devices. In fuel cells the production of protons may be bypassed, and an oxidant such as permanganate or oxygen from air may be used to drive the fuel cells. In such an embodiment, an intermediate reaction may not be needed to produce protons. In one embodiment, membrane-less laminar flow fuel cells with an external grid for oxygen supply from the air may be used.

Capabilities of silicon Shottki barriers and planar detectors in low-energy proton spectometry

Energy Technology Data Exchange (ETDEWEB)

Verbitskaya, E M; Eremin, V K; Malyarenko, A M; Sakharov, V I; Serenkov, I T; Strokan, N B; Sukhanov, V L

1987-05-12

Dependence of the resolution of surface barrier and planar diffusion silicon detectors on proton energy is investigated. The experiment was conducted at the device, representing the double mass spectrometer with the maximal energy of single-charged ions up to 200 keV. Two advantages of using planar diffusion detectors for light low-energy ion spectrometry is established: high energy resolution and independence of signal amplitude of bias voltage. Background noise represents the main factor dictaiting resolution, but fluctuations of losses in input window are sufficient as well. It was concluded that planar detector application for spectrometry of protons with energy of less than 200 keV would improve the resolution up to 2.2 keV without detector cooling.

Polarized photons from a silicon crystal in a 31 GeV electron beam at the Serpukhov proton accelerator

International Nuclear Information System (INIS)

Frolov, A.M.; Maisheev, V.A.; Arakelyan, E.A.; Armaganyan, A.A.; Avakyan, R.O.; Bayatyan, G.L.; Grigoryan, N.K.; Kechechyan, A.O.; Knyazyan, S.G.; Margaryan, A.T.

1980-01-01

Tagged photons coherently emitted in a silicon crystal by the 31 GeV electron beam of intensity 4 x 10 4 ppp and beam pulse duration of up to 1.7 s have been obtained at the Serpukhov proton accelerator. The photon intensities were I approx. 10 -1 - 10 -2 γ/e - in five almost equal energy bins within the total range k = (8.2-24.2) GeV. The calculated linear polarizations were P approx. 50-20%, respectively. Narrow peaks in the radiation intensity were observed when varying the orientation of a silicon crystal which could not be explained. The method for the experimental alignment of a crystal in electron beams at the proton accelerator has been described. (orig.)

Determination of intensity and energy spectrum of neutrons by bombardment of thallium-203 thick target and its copper substrate with 28.5 MeV protons

International Nuclear Information System (INIS)

Hajiloo, N.; Raisali, Gh.; Hamidi, S.; Aslani, Gh.

2007-01-01

In this research we have determined neutrons spectrum and the intensity that produced from thallium target bombardment. We have applied SRIM and ALICE computer codes to thallium target and its copper substrate for 145 μA of 28.5 MeV incident proton beam from cyclotron Cyclone30. Because of the energy degradation of protons while passing through the thallium target and its copper substrate, the average energy of protons in different depths has been calculated by using SRIM computer code. Then, by applying ALICE computer code for each sub-layer, the neutron production cross sections and their energy spectrum have been calculated to determine the total neutron intensity and spectrum. Using the calculated neutron intensity of 1.22x10 13 n/s as the source, the equivalent dose rate at the distance 6 meters from the target has been calculated by MCNP computer code and the result has been compared with the measured value. The Pb 201 activity has also been calculated as 13.5 Curies. The measured Pb 201 activity by Curie meter CAPINTEC CRC-712 is 13.1 Ci which is in reasonable agreement with the calculated value, bearing in mind the uncertainties in the proposed models and the measurements

AES, EELS and TRIM simulation method study of InP(100 subjected to Ar+, He+ and H+ ions bombardment.

Directory of Open Access Journals (Sweden)

Abidri B.

2012-06-01

Full Text Available Auger Electron Spectroscopy (AES and Electron Energy Loss Spectroscopy (EELS have been performed in order to investigate the InP(100 surface subjected to ions bombardment. The InP(100 surface is always contaminated by carbon and oxygen revealed by C-KLL and O-KLL AES spectra recorded just after introduction of the sample in the UHV spectrometer chamber. The usually cleaning process of the surface is the bombardment by argon ions. However, even at low energy of ions beam (300 eV indium clusters and phosphorus vacancies are usually formed on the surface. The aim of our study is to compare the behaviour of the surface when submitted to He+ or H+ ions bombardment. The helium ions accelerated at 500V voltage and for 45 mn allow removing contaminants but induces damaged and no stoichiometric surface. The proton ions were accelerated at low energy of 500 eV to bombard the InP surface at room temperature. The proton ions broke the In-P chemical bonds to induce the formation of In metal islands. Such a chemical reactivity between hydrogen and phosphorus led to form chemical species such as PH and PH3, which desorbed from the surface. The chemical susceptibly and the small size of H+ advantaged their diffusion into bulk. Since the experimental methods alone were not able to give us with accuracy the disturbed depth of the target by these ions. We associate to the AES and EELS spectroscopies, the TRIM (Transport and Range of Ions in Matter simulation method in order to show the mechanism of interaction between Ar+, He+ or H+ ions and InP and determine the disturbed depth of the target by argon, helium or proton ions.

Study of the bistable hydrogen donors properties in silicon implanted by the protons

International Nuclear Information System (INIS)

Abdullin, Kh.A.; Gorelkinskij, Yu.V.; Serikkanov, A.S.

2003-01-01

The proton implantation in silicon with doses 10 16 -10 17 cm -2 leads to formation of the hydrogen supersaturated solid solution in the Si. At the room temperature the hydrogen mobility on radiation defects limited by the H atom capture is inappreciably low. Thermal annealing at 400-500 Deg. C results in the decay and rebuilding of hydrogen-containing radiation defects and precipitants, that leads to reduction of the free energy of the system. Precipitation occurring in the form of nano-cluster defects formation, containing the hydrogen atoms. Thermal annealing of the silicon implanted by hydrogen at ∼450 Deg. C during 20 min. causing the hydrogen precipitation process and defects agglomeration leads to donor centers formation registering by the Hall effect

Comparative measurements of proton dechanneling in silicon under channeling, blocking and double alignment conditions

International Nuclear Information System (INIS)

Kerkow, H.; Pietsch, H.; Taeubner, F.

1980-01-01

Backscattering yields of 300 keV protons are measured under channeling (sub(ch)), blocking (sub(bl)) and double alignment (sub(da)) conditions on (111)-silicon crystals. It was established that the relation sub(ch)-sub(bl)sub(da) is fulfilled within an experimental error of 10% for clean surfaces as well as for vacuum deposited layers on the crystal surface. (author)

Systematic investigation of background sources in neutron flux measurements with a proton-recoil silicon detector

Energy Technology Data Exchange (ETDEWEB)

Marini, P., E-mail: marini@cenbg.in2p3.fr [CENBG, CNRS/IN2P3-Université de Bordeaux, Chemin du Solarium B.P. 120, 33175 Gradignan (France); Mathieu, L. [CENBG, CNRS/IN2P3-Université de Bordeaux, Chemin du Solarium B.P. 120, 33175 Gradignan (France); Acosta, L. [Instituto de Física, Universidad Nacional Autónoma de México, Apartado Postal 20-364, México D.F. 01000 (Mexico); Aïche, M.; Czajkowski, S.; Jurado, B.; Tsekhanovich, I. [CENBG, CNRS/IN2P3-Université de Bordeaux, Chemin du Solarium B.P. 120, 33175 Gradignan (France)

2017-01-01

Proton-recoil detectors (PRDs), based on the well known standard H(n,p) elastic scattering cross section, are the preferred instruments to perform precise quasi-absolute neutron flux measurements above 1 MeV. The limitations of using a single silicon detector as PRD at a continuous neutron beam facility are investigated, with the aim of extending such measurements to neutron energies below 1 MeV. This requires a systematic investigation of the background sources affecting the neutron flux measurement. Experiments have been carried out at the AIFIRA facility to identify these sources. A study on the role of the silicon detector thickness on the background is presented and an energy limit on the use of a single silicon detector to achieve a neutron flux precision better than 1% is given.

Characterization of the energy distribution of neutrons generated by 5 MeV protons on a thick beryllium target at different emission angles

Energy Technology Data Exchange (ETDEWEB)

Agosteo, S. [Politecnico di Milano, Dipartimento di Energia, Piazza Leonardo da Vinci 32, 20133 Milano (Italy)] [Istituto Nazionale di Fisica Nucleare, Sezione di Milano, via Celoria 16, 20133 Milano (Italy); Colautti, P., E-mail: paolo.colautti@lnl.infn.it [INFN, Laboratori Nazionali di Legnaro (LNL), Via dell' Universita, 2, I-35020 Legnaro (PD) (Italy); Esposito, J., E-mail: juan.esposito@tin.it [INFN, Laboratori Nazionali di Legnaro (LNL), Via dell' Universita, 2, I-35020 Legnaro (PD) (Italy); Fazzi, A.; Introini, M.V.; Pola, A. [Politecnico di Milano, Dipartimento di Energia, Piazza Leonardo da Vinci 32, 20133 Milano (Italy)] [Istituto Nazionale di Fisica Nucleare, Sezione di Milano, via Celoria 16, 20133 Milano (Italy)

2011-12-15

Neutron energy spectra at different emission angles, between 0 Degree-Sign and 120 Degree-Sign from the Be(p,xn) reaction generated by a beryllium thick-target bombarded with 5 MeV protons, have been measured at the Legnaro Laboratories (LNL) of the Italian National Institute for Nuclear Physics research (INFN). A new and quite compact recoil-proton spectrometer, based on a monolithic silicon telescope, coupled to a polyethylene converter, was efficiently used with respect to the traditional Time-of-Flight (TOF) technique. The measured distributions of recoil-protons were processed through an iterative unfolding algorithm in order to determine the neutron energy spectra at all the angles accounted for. The neutron energy spectrum measured at 0 Degree-Sign resulted to be in good agreement with the only one so far available at the requested energy and measured years ago with TOF technique. Moreover, the results obtained at different emission angles resulted to be consistent with detailed past measurements performed at 4 MeV protons at the same angles by TOF techniques.

RBS and NRA damage analysis on PFA films bombarded with hydrogen

International Nuclear Information System (INIS)

Parada, Marco A.; Petchevist, Paulo C.D.; Minamisawa, Renato A.; Almeida, Adelaide de; Muntele, Claudiu I.; Zimmerman, Robert L.; Ila, Daryush

2005-01-01

The fluoropolymer PFA (Tetrafluoroethylene-per-fluoromethoxy ethylene) is a conventional thermoplastic used in civil engineering applications such as anti-adherent coatings and concrete additives. It is also candidate materials for radiation dosimetry with applications in medical physics. When such a polymer is exposed to ionizing radiation, it can suffers damages that depend on the type, energy, and intensity of the radiation. We present results on the damage caused by 1 MeV protons at fluences of 10 13 , 10 14 , 10 15 , and 10 16 protons/cm 2 . The energy deposited during such hydrogen bombardment breaks the polymeric chains with the release of fluorine in amounts directly proportional to the amount of deposited energy. Virgin samples were first analyzed by RBS. Subsequent damage was then profiled by monitoring the alpha emission spectrum, resulting from the nuclear reaction: 19 F(p,αγ) 16 O induced by 1.38 MeV protons on the remaining fluorine content of damaged polymer samples. (author)

Initial testing of a pixelated silicon detector prototype in proton therapy.

Science.gov (United States)

Wroe, Andrew J; McAuley, Grant; Teran, Anthony V; Wong, Jeannie; Petasecca, Marco; Lerch, Michael; Slater, James M; Rozenfeld, Anatoly B

2017-09-01

As technology continues to develop, external beam radiation therapy is being employed, with increased conformity, to treat smaller targets. As this occurs, the dosimetry methods and tools employed to quantify these fields for treatment also have to evolve to provide increased spatial resolution. The team at the University of Wollongong has developed a pixelated silicon detector prototype known as the dose magnifying glass (DMG) for real-time small-field metrology. This device has been tested in photon fields and IMRT. The purpose of this work was to conduct the initial performance tests with proton radiation, using beam energies and modulations typically associated with proton radiosurgery. Depth dose and lateral beam profiles were measured and compared with those collected using a PTW parallel-plate ionization chamber, a PTW proton-specific dosimetry diode, EBT3 Gafchromic film, and Monte Carlo simulations. Measurements of the depth dose profile yielded good agreement when compared with Monte Carlo, diode and ionization chamber. Bragg peak location was measured accurately by the DMG by scanning along the depth dose profile, and the relative response of the DMG at the center of modulation was within 2.5% of that for the PTW dosimetry diode for all energy and modulation combinations tested. Real-time beam profile measurements of a 5 mm 127 MeV proton beam also yielded FWHM and FW90 within ±1 channel (0.1 mm) of the Monte Carlo and EBT3 film data across all depths tested. The DMG tested here proved to be a useful device at measuring depth dose profiles in proton therapy with a stable response across the entire proton spread-out Bragg peak. In addition, the linear array of small sensitive volumes allowed for accurate point and high spatial resolution one-dimensional profile measurements of small radiation fields in real time to be completed with minimal impact from partial volume averaging. © 2017 The Authors. Journal of Applied Clinical Medical Physics published

Radiation damage and defect behavior in proton irradiated lithium-counterdoped n/sup +/p silicon solar cells

International Nuclear Information System (INIS)

Stupica, J.; Goradia, C.; Swartz, C.K.; Weinberg, I.

1987-01-01

Two lithium-counterdoped n/sup +/p silicon solar cells with different lithium concentrations were irradiated by 10 MeV protons. Cell performance was measured as a function of fluence, and it was found that the cell with the highest concentration of lithium had the higher radiation resistance. Deep level defects were studied using deep level transient spectroscopy which yielded two defects that were lithium related. Relating the defect energy levels obtained from this study under 10 MeV protons, with an earlier work using 1 MeV electron irradiations shows no correlation of the defect energy levels. There is one marked comparison though. The absence of the boron interstitial-oxygen interstitial defect. This consistency strengthens the belief that lithium interacts with oxygen to prevent the formation of the boron interstitial-oxygen interstitial defect. The present results indicate that, in general, addition of lithium in small amounts to the p-base of a boron doped silicon solar cell such that the base remains p-type, tends to increase the radiation resistance of the cell

Shallow boron dopant on silicon An MD study

International Nuclear Information System (INIS)

Perez-Martin, A. Mari Carmen; Jimenez-Rodriguez, Jose J.; Jimenez-Saez, Jose Carlos

2004-01-01

Low energy boron bombardment of silicon has been simulated at room temperature by molecular dynamics (MD). Tersoff potential T3 was used in the simulation smoothly linked up with the universal potential. The boron-silicon (B-Si) interaction was simulated according to Tersoff potential for SiC but modified to account for the B-Si interaction. The algorithm can distinguish a B from a Si neighbour. Si-c, with (2 x 1) surface reconstruction, was bombarded with boron at 200 and 500 eV. These energies were initially chosen as good representative values of the low energy range. Reliable results require of a reasonable good statistic so that 1000-impact points were chosen uniformly distributed over a representative area of a 2 x 1 surface. The distribution of mean projected range for B is given. All kinds of point defect were looked for in a Si damaged target after bombardment. Energetically stable substitutional and interstitial configurations are presented and the relative appearances of the different types of interstitials, for both Si and B, are given. It is also determined the mean length of the distance to the first neighbours of defects

An Alpha Proton X-Ray Spectrometer for Mars-96 and Mars Pathfinder

Science.gov (United States)

Rieder, R.; Wanke, H.; Economou, T.

1996-09-01

Mars Pathfinder and the Russian Mars-96 will carry an Alpha Proton X-Ray Spectrometer (APXS) for the determination of the chemical composition of Martian rocks and soil. The instrument will measure the concentration of all major and many minor elements, including C,N and O, at levels above typically 1%. The method employed consist of bombarding a sample of 50 mm diameter with alpha particles from a radioactive source (50 mCi of Cm-244) and measuring: (i) backscattered alpha particles (alpha mode) (ii) protons from (a,p) reactions with some light elements (proton mode) (iii) characteristic X-rays emitted from the sample (X-ray mode). The APXS has a long standing space heritage, going back to Surveyor V,VI and VII (1967/68) and the Soviet Phobos (1988) missions. The present design is the result of an endeavour to reduce mass and power consumption to 600g/ 300mW. It consist of a sensor head containing the alpha sources, a telescope of a silicon detectors for the detection of the alpha particles and protons and a separate X-ray detector with its preamplifier, and an electronics box (80x70x60 mm) containing a microcontroller based multichannel spectrometer. The paper will describe the APXS flight hardware and present results obtained with the flight instrument that will show the instrument capabili- ties and the expected results to be obtained during surface operations on Mars.

Dry Etch Black Silicon with Low Surface Damage: Effect of Low Capacitively Coupled Plasma Power

DEFF Research Database (Denmark)

Iandolo, Beniamino; Plakhotnyuk, Maksym; Gaudig, Maria

2017-01-01

Black silicon fabricated by reactive ion etch (RIE) is promising for integration into silicon solar cells thanks to its excellent light trapping ability. However, intensive ion bombardment during the RIE induces surface damage, which results in enhanced surface recombination velocity. Here, we pr...... carrier lifetime thanks to reduced ion energy. Surface passivation using atomic layer deposition of Al2O3 improves the effective lifetime to 7.5 ms and 0.8 ms for black silicon n- and p-type wafers, respectively.......Black silicon fabricated by reactive ion etch (RIE) is promising for integration into silicon solar cells thanks to its excellent light trapping ability. However, intensive ion bombardment during the RIE induces surface damage, which results in enhanced surface recombination velocity. Here, we...... present a RIE optimization leading to reduced surface damage while retaining excellent light trapping and low reflectivity. In particular, we demonstrate that the reduction of the capacitively coupled power during reactive ion etching preserves a reflectance below 1% and improves the effective minority...

Multiplication in Silicon p-n Junctions

DEFF Research Database (Denmark)

Moll, John L.

1965-01-01

Multiplication values were measured in the collector junctions of silicon p-n-p and n-p-n transistors before and after bombardment by 1016 neutrons/cm2. Within experimental error there was no change either in junction fields, as deduced from capacitance measurements, or in multiplication values i...

Radiation damage in silicon exposed to high-energy protons

International Nuclear Information System (INIS)

Davies, Gordon; Hayama, Shusaku; Murin, Leonid; Krause-Rehberg, Reinhard; Bondarenko, Vladimir; Sengupta, Asmita; Davia, Cinzia; Karpenko, Anna

2006-01-01

Photoluminescence, infrared absorption, positron annihilation, and deep-level transient spectroscopy (DLTS) have been used to investigate the radiation damage produced by 24 GeV/c protons in crystalline silicon. The irradiation doses and the concentrations of carbon and oxygen in the samples have been chosen to monitor the mobility of the damage products. Single vacancies (and self-interstitials) are introduced at the rate of ∼1 cm -1 , and divacancies at 0.5 cm -1 . Stable di-interstitials are formed when two self-interstitials are displaced in one damage event, and they are mobile at room temperature. In the initial stages of annealing the evolution of the point defects can be understood mainly in terms of trapping at the impurities. However, the positron signal shows that about two orders of magnitude more vacancies are produced by the protons than are detected in the point defects. Damage clusters exist, and are largely removed by annealing at 700 to 800 K, when there is an associated loss of broad band emission between 850 and 1000 meV. The well-known W center is generated by restructuring within clusters, with a range of activation energies of about 1.3 to 1.6 eV, reflecting the disordered nature of the clusters. Comparison of the formation of the X centers in oxygenated and oxygen-lean samples suggests that the J defect may be interstitial related rather than vacancy related. To a large extent, the damage and annealing behavior may be factorized into point defects (monitored by sharp-line optical spectra and DLTS) and cluster defects (monitored by positron annihilation and broadband luminescence). Taking this view to the limit, the generation rates for the point defects are as predicted by simply taking the damage generated by the Coulomb interaction of the protons and Si nuclei

Study of a silicon telescope for solid state microdosimetry: Preliminary measurements at the therapeutic proton beam line of CATANA

International Nuclear Information System (INIS)

Agosteo, S.; Cirrone, G.A.P.; Colautti, P.; Cuttone, G.; D'Angelo, G.; Fazzi, A.; Introini, M.V.; Moro, D.; Pola, A.; Varoli, V.

2010-01-01

A monolithic silicon device consisting of a matrix of micrometric cylindrical diodes (about 2 μm in thickness and 9 μm in diameter) coupled to a residual energy measurement stage E (about 500 μm in thickness) was proposed and studied for assessing the quality of a therapeutic proton beam. The device was placed at different depths inside a polymethyl-methacrylate phantom and irradiated with a modulated 62 MeV proton beam at the Centro di AdroTerapia e Applicazioni Nucleari Avanzate (CATANA) of the Laboratori Nazionali del Sud (LNS, Catania, Italy) of the Istituto Nazionale di Fisica Nucleare (INFN). At each phantom depth, the energy imparted in the two detector stages was measured event-by-event in coincidence mode. The distributions of the energy imparted to the cylindrical diodes were corrected for tissue-equivalence by applying an optimized procedure. In order to perform a comparison with literature data measured with a cylindrical TEPC, the distributions derived with the silicon detector were corrected for shape-equivalence. The agreement with the microdosimetric spectra measured with the TEPC was satisfactory above the detection limit imposed by the electronic noise of the silicon-based system.

Study of a silicon telescope for solid state microdosimetry: Preliminary measurements at the therapeutic proton beam line of CATANA

Energy Technology Data Exchange (ETDEWEB)

Agosteo, S. [Politecnico di Milano, Dipartimento di Energia, Sezione di Ingegneria Nucleare, via Ponzio 34/3, 20133 Milano (Italy); Istituto Nazionale di Fisica Nucleare, Sezione di Milano, via Celoria 16, 20133 Milano (Italy); Cirrone, G.A.P. [Istituto Nazionale di Fisica Nucleare, Laboratori Nazionali del Sud, via S. Sofia 44, 95123 Catania (Italy); Colautti, P. [Istituto Nazionale di Fisica Nucleare, Laboratori Nazionali di Legnaro, viale dell' Universita 2, 35020 Legnaro (Italy); Cuttone, G. [Istituto Nazionale di Fisica Nucleare, Laboratori Nazionali del Sud, via S. Sofia 44, 95123 Catania (Italy); D' Angelo, G.; Fazzi, A.; Introini, M.V. [Politecnico di Milano, Dipartimento di Energia, Sezione di Ingegneria Nucleare, via Ponzio 34/3, 20133 Milano (Italy); Istituto Nazionale di Fisica Nucleare, Sezione di Milano, via Celoria 16, 20133 Milano (Italy); Moro, D. [Istituto Nazionale di Fisica Nucleare, Laboratori Nazionali di Legnaro, viale dell' Universita 2, 35020 Legnaro (Italy); Pola, A., E-mail: andrea.pola@polimi.i [Politecnico di Milano, Dipartimento di Energia, Sezione di Ingegneria Nucleare, via Ponzio 34/3, 20133 Milano (Italy); Istituto Nazionale di Fisica Nucleare, Sezione di Milano, via Celoria 16, 20133 Milano (Italy); Varoli, V. [Politecnico di Milano, Dipartimento di Energia, Sezione di Ingegneria Nucleare, via Ponzio 34/3, 20133 Milano (Italy); Istituto Nazionale di Fisica Nucleare, Sezione di Milano, via Celoria 16, 20133 Milano (Italy)

2010-12-15

A monolithic silicon device consisting of a matrix of micrometric cylindrical diodes (about 2 {mu}m in thickness and 9 {mu}m in diameter) coupled to a residual energy measurement stage E (about 500 {mu}m in thickness) was proposed and studied for assessing the quality of a therapeutic proton beam. The device was placed at different depths inside a polymethyl-methacrylate phantom and irradiated with a modulated 62 MeV proton beam at the Centro di AdroTerapia e Applicazioni Nucleari Avanzate (CATANA) of the Laboratori Nazionali del Sud (LNS, Catania, Italy) of the Istituto Nazionale di Fisica Nucleare (INFN). At each phantom depth, the energy imparted in the two detector stages was measured event-by-event in coincidence mode. The distributions of the energy imparted to the cylindrical diodes were corrected for tissue-equivalence by applying an optimized procedure. In order to perform a comparison with literature data measured with a cylindrical TEPC, the distributions derived with the silicon detector were corrected for shape-equivalence. The agreement with the microdosimetric spectra measured with the TEPC was satisfactory above the detection limit imposed by the electronic noise of the silicon-based system.

RBS and NRA damage analysis on PFA films bombarded with hydrogen

Energy Technology Data Exchange (ETDEWEB)

Parada, Marco A.; Petchevist, Paulo C.D.; Minamisawa, Renato A.; Almeida, Adelaide de [Sao Paulo Univ., SP (Brazil). Inst. de Fisica]. E-mail: dalmeida@ffclrp.usp.br; Muntele, Claudiu I.; Zimmerman, Robert L.; Ila, Daryush [A and M University, Normal, AL (United States). Center for Irradiation of Materials]. E-mail: ila@cim.aamu.edu

2005-07-01

The fluoropolymer PFA (Tetrafluoroethylene-per-fluoromethoxy ethylene) is a conventional thermoplastic used in civil engineering applications such as anti-adherent coatings and concrete additives. It is also candidate materials for radiation dosimetry with applications in medical physics. When such a polymer is exposed to ionizing radiation, it can suffers damages that depend on the type, energy, and intensity of the radiation. We present results on the damage caused by 1 MeV protons at fluences of 10{sup 13}, 10{sup 14}, 10{sup 15}, and 10{sup 16} protons/cm{sup 2}. The energy deposited during such hydrogen bombardment breaks the polymeric chains with the release of fluorine in amounts directly proportional to the amount of deposited energy. Virgin samples were first analyzed by RBS. Subsequent damage was then profiled by monitoring the alpha emission spectrum, resulting from the nuclear reaction: {sup 19}F(p,{alpha}{gamma}){sup 16}O induced by 1.38 MeV protons on the remaining fluorine content of damaged polymer samples. (author)

Quantitative study of the transmission of axially channeled protons in thin silicon crystals

International Nuclear Information System (INIS)

Rosner, J.S.; Gibson, W.M.; Golovchenko, J.A.; Goland, A.N.; Wegner, H.E.

1978-01-01

The azimuthal distributions of protons transmitted through thin silicon single crystals near the axis were measured using a two-dimensional position-sensitive detector. The data are composed of ringlike distributions with strong azimuthal and transverse energy dependence. The azimuthal distributions are compared with theoretical predictions based on the random string approximation using different forms of the interatomic potential. ''Blocking'' in the transverse plane is also observed. In addition, from an analysis of the radial spreading of the distribution the effects of inelastic scattering in the transverse plane are clearly seen

Radiation modification and interaction mechanism of polypropylene and polyethylene by protons and electrons

International Nuclear Information System (INIS)

Wang Guanghou

1988-10-01

A systematic investigation of radiation effects on isotactic polypropylene (PP) and low-density polyethylene (PE) films by protons and electrons is reported. Electrons can make polyethylene cross-linked and polypropylene crached while protons can improve the PP mechanical properties and deteriorate polyethylene with increasing the irradiation dose. The structural analysis shows that conversion between α and β phases occurs and the crystallinity remains constant in the electron-irradiated polypropylene whereas the network structure is formed by allyl-type radicals in the e - -irradiated polyethylene. The infrared spectra indicate that conformational changes have taken place in the polypropylene under proton bombardment, such as the transition from an ordered to a disordered state in the crystalline region, the formation of double bonds as well as trans-conformations. This leads to the cross-linking between macromolecules of polypropylene at the proper irradiation doses, thus enhancing its mechanical properties. The cross-linking of polypropylene by proton bombardment observed and its properties may have some potential applications

Electrical properties of as-grown and proton-irradiated high purity silicon

Energy Technology Data Exchange (ETDEWEB)

Krupka, Jerzy, E-mail: krupka@imio.pw.edu.pl [Institute of Microelectronics and Optoelectronics, Warsaw University of Technology, Koszykowa 75, 00-662 Warsaw (Poland); Karcz, Waldemar [Joint Institute for Nuclear Research, Joliot-Curie 6, 141980 Dubna (Russian Federation); Kamiński, Paweł [Institute of Electronic Materials Technology, Wólczyńska 13, 301-919 Warsaw (Poland); Jensen, Leif [Topsil Semiconductor Materials A/S, Siliciumvej 1, DK-3600 Frederikssund (Denmark)

2016-08-01

The complex permittivity of as-grown and proton-irradiated samples of high purity silicon obtained by the floating zone method was measured as a function of temperature at a few frequencies in microwave spectrum by employing the quasi TE{sub 011} and whispering gallery modes excited in the samples under test. The resistivity of the samples was determined from the measured imaginary part of the permittivity. The resistivity was additionally measured at RF frequencies employing capacitive spectroscopy as well as in a standard direct current experiment. The sample of as-grown material had the resistivity of ∼85 kΩ cm at room temperature. The sample irradiated with 23-MeV protons had the resistivity of ∼500 kΩ cm at 295 K and its behavior was typical of the intrinsic material at room and at elevated temperatures. For the irradiated sample, the extrinsic conductivity region is missing and at temperatures below 250 K hopping conductivity occurs. Thermal cycle hysteresis of the resistivity for the sample of as-grown material is observed. After heating and subsequent cooling of the sample, its resistivity decreases and then slowly (∼50 h) returns to the initial value.

CCE measurements and annealing studies on proton-irradiated p-type MCz silicon diodes

CERN Document Server

Hoedlmoser, H; Köhler, M; Nordlund, H

2007-01-01

Magnetic Czochralski (MCz) silicon has recently been investigated for the development of radiation tolerant detectors for future high-luminosity HEP experiments. A study of p-type MCz Silicon diodes irradiated with protons up to a fluence of has been performed by means of Charge Collection Efficiency (CCE) measurements as well as standard CV/IV characterizations. The changes of CCE, full depletion voltage and leakage current as a function of fluence are reported. A subsequent annealing study of the irradiated detectors shows an increase in effective doping concentration and a decrease in the leakage current, whereas the CCE remains basically unchanged. Two different series of detectors have been compared differing in the implantation dose of p-spray isolation as well as effective doping concentration (Neff) of the p-type bulk presumably due to a difference in thermal donor (TD) activation during processing. The series with the higher concentration of TDs shows a delayed reverse annealing of Neff after irradia...

Colloidal characterization of ultrafine silicon carbide and silicon nitride powders

Science.gov (United States)

Whitman, Pamela K.; Feke, Donald L.

1986-01-01

The effects of various powder treatment strategies on the colloid chemistry of aqueous dispersions of silicon carbide and silicon nitride are examined using a surface titration methodology. Pretreatments are used to differentiate between the true surface chemistry of the powders and artifacts resulting from exposure history. Silicon nitride powders require more extensive pretreatment to reveal consistent surface chemistry than do silicon carbide powders. As measured by titration, the degree of proton adsorption from the suspending fluid by pretreated silicon nitride and silicon carbide powders can both be made similar to that of silica.

Correlation of displacement effects produced by electrons, protons, and neutrons in silicon

International Nuclear Information System (INIS)

van Lint, V.A.J.; Gigas, G.; Barengoltz, J.

1975-01-01

The correlation of displacement effects produced by electrons, protons, and neutrons in silicon is studied. Available data from the literature is employed. In particular the scope of the study is limited to the degradation of excess carrier lifetime and device electrical parameters directly related to it. The degree to which displacement effects may be correlated in order to predict semiconductor device response based on response data to another type of radiation is discussed. Useful ranges of the correlation factors (K/sub tau/ ratios) as a function of device majority carrier type, device resistivity, and injection level are presented. A significant dependence on injection level for the correlation factors is found

High-efficiency deflection of high energy protons due to channeling along the 〈110〉 axis of a bent silicon crystal

Directory of Open Access Journals (Sweden)

W. Scandale

2016-09-01

Full Text Available A deflection efficiency of about 61% was observed for 400 GeV/c protons due to channeling, most strongly along the 〈110〉 axis of a bent silicon crystal. It is comparable with the deflection efficiency in planar channeling and considerably larger than in the case of the 〈111〉 axis. The measured probability of inelastic nuclear interactions of protons in channeling along the 〈110〉 axis is only about 10% of its amorphous level whereas in channeling along the (110 planes it is about 25%. High efficiency deflection and small beam losses make this axial orientation of a silicon crystal a useful tool for the beam steering of high energy charged particles.

Surface temperature measurements for ion-bombarded Si and GaAs at 1.0 to 2.0 MeV

International Nuclear Information System (INIS)

Lowe, L.F.; Kennedy, J.K.; Davies, D.E.; Deane, M.L.; Eyges, L.J.

1975-01-01

Surface temperatures of ion-bombarded silicon and gallium arsenide have been measured using an infrared detector. Ion beams of N + , N + 2 , O + , O + 2 , C + , CO + , and H + were used at energies from 1--2.0 MeV and at current densities up to 12 μAcenter-dotcm/sup -2/. No temperature dependence was found on ion species, energy, or current. The change in temperature depended only on beam power, target material, and sample mounting technique. With proper mounting temperature increases of 20 degreeC for silicon and 65 degreeC for gallium arsenide were observed for a beam power density of 1.0 Wcenter-dotcm/sup -2/

Temperature and humidity effect on aging of silicone rubbers as sealing materials for proton exchange membrane fuel cell applications

International Nuclear Information System (INIS)

Chang, Huawei; Wan, Zhongmin; Chen, Xi; Wan, Junhua; Luo, Liang; Zhang, Haining; Shu, Shuiming; Tu, Zhengkai

2016-01-01

Highlights: • Aging of silicone rubbers with different hardness was investigated. • Existed water molecules from humidified gases can accelerate the aging process. • Silicone rubber with hardness of 40 is more suitable as sealing materials. • Silicone rubbers can be used as sealing materials below 80 °C but not above 100 °C. - Abstract: Durability and reliability of seals around perimeter of each unit are critical to the lifetime of proton exchange membrane fuel cells. In this study, we investigate the aging of silicone rubbers with different hardness, often used as sealing materials for fuel cells, subjected to dry and humidified air at different temperatures. The aging properties are characterized by variation of permanent compression set value under compression, mechanical properties, and surface morphology as well. The results show that aging of silicone rubbers becomes more severe with the increase in subjected temperature. At temperature above 100 °C, silicone rubbers are not suitable for fuel cell applications. The existed water molecules from humidified gases can accelerate the aging of silicone rubbers. Among the tested samples, silicone rubber with hardness of 40 is more durable than that with hardness of 30 and 50 for fuel cells. The change of chemical structure after aging suggests that the aging of silicone rubbers mainly results from the chemical decomposition of cross-linker units for connection of polysiloxane backbones and of methyl groups attached to silicon atoms.

Optoelectronic properties of Black-Silicon generated through inductively coupled plasma (ICP) processing for crystalline silicon solar cells

Energy Technology Data Exchange (ETDEWEB)

Hirsch, Jens, E-mail: J.Hirsch@emw.hs-anhalt.de [Anhalt University of Applied Sciences, Faculty EMW, Bernburger Str. 55, DE-06366 Köthen (Germany); Fraunhofer Center for Silicon Photovoltaics CSP, Otto-Eißfeldt-Str. 12, DE-06120 Halle (Saale) (Germany); Gaudig, Maria; Bernhard, Norbert [Anhalt University of Applied Sciences, Faculty EMW, Bernburger Str. 55, DE-06366 Köthen (Germany); Lausch, Dominik [Fraunhofer Center for Silicon Photovoltaics CSP, Otto-Eißfeldt-Str. 12, DE-06120 Halle (Saale) (Germany)

2016-06-30

Highlights: • Fabrication of black silicon through inductively coupled plasma (ICP) processing. • Suppressed formation a self-bias and therefore a reduced ion bombardment of the silicon sample. • Reduction of the average hemispherical reflection between 300 and 1120 nm up to 8% within 5 min ICP process time. • Reflection is almost independent of the angle of incidence up to 60°. • 2.5 ms effective lifetime at 10{sup 15} cm{sup −3} MCD after ALD Al{sub 2}O{sub 3} surface passivation. - Abstract: The optoelectronic properties of maskless inductively coupled plasma (ICP) generated black silicon through SF{sub 6} and O{sub 2} are analyzed by using reflection measurements, scanning electron microscopy (SEM) and quasi steady state photoconductivity (QSSPC). The results are discussed and compared to capacitively coupled plasma (CCP) and industrial standard wet chemical textures. The ICP process forms parabolic like surface structures in a scale of 500 nm. This surface structure reduces the average hemispherical reflection between 300 and 1120 nm up to 8%. Additionally, the ICP texture shows a weak increase of the hemispherical reflection under tilted angles of incidence up to 60°. Furthermore, we report that the ICP process is independent of the crystal orientation and the surface roughness. This allows the texturing of monocrystalline, multicrystalline and kerf-less wafers using the same parameter set. The ICP generation of black silicon does not apply a self-bias on the silicon sample. Therefore, the silicon sample is exposed to a reduced ion bombardment, which reduces the plasma induced surface damage. This leads to an enhancement of the effective charge carrier lifetime up to 2.5 ms at 10{sup 15} cm{sup −3} minority carrier density (MCD) after an atomic layer deposition (ALD) with Al{sub 2}O{sub 3}. Since excellent etch results were obtained already after 4 min process time, we conclude that the ICP generation of black silicon is a promising technique

Investigation of beam effect on porous silicon

Energy Technology Data Exchange (ETDEWEB)

Kotai, E. E-mail: kotai@rmki.kfki.hu; Paszti, F.; Szilagyi, E

2000-03-01

When performing Rutherford Backscattering Spectroscopy (RBS) measurements combined with channeling on 'columnar' porous silicon (PS) samples with beam aligned to the direction of the pores, a strong beam effect was observed. The minimum yield as a function of the beam dose for different porous samples was compared with the yield measured on single crystal silicon. It was demonstrated that the beam effect strongly depends on the porosity of the sample. Bombardment in the random direction caused about 10% higher change in the minimum yield than in the channel direction.

Investigation of beam effect on porous silicon

International Nuclear Information System (INIS)

Kotai, E.; Paszti, F.; Szilagyi, E.

2000-01-01

When performing Rutherford Backscattering Spectroscopy (RBS) measurements combined with channeling on 'columnar' porous silicon (PS) samples with beam aligned to the direction of the pores, a strong beam effect was observed. The minimum yield as a function of the beam dose for different porous samples was compared with the yield measured on single crystal silicon. It was demonstrated that the beam effect strongly depends on the porosity of the sample. Bombardment in the random direction caused about 10% higher change in the minimum yield than in the channel direction

Innovative thin silicon detectors for monitoring of therapeutic proton beams: preliminary beam tests

Science.gov (United States)

Vignati, A.; Monaco, V.; Attili, A.; Cartiglia, N.; Donetti, M.; Fadavi Mazinani, M.; Fausti, F.; Ferrero, M.; Giordanengo, S.; Hammad Ali, O.; Mandurrino, M.; Manganaro, L.; Mazza, G.; Sacchi, R.; Sola, V.; Staiano, A.; Cirio, R.; Boscardin, M.; Paternoster, G.; Ficorella, F.

2017-12-01

To fully exploit the physics potentials of particle therapy in delivering dose with high accuracy and selectivity, charged particle therapy needs further improvement. To this scope, a multidisciplinary project (MoVeIT) of the Italian National Institute for Nuclear Physics (INFN) aims at translating research in charged particle therapy into clinical outcome. New models in the treatment planning system are being developed and validated, using dedicated devices for beam characterization and monitoring in radiobiological and clinical irradiations. Innovative silicon detectors with internal gain layer (LGAD) represent a promising option, overcoming the limits of currently used ionization chambers. Two devices are being developed: one to directly count individual protons at high rates, exploiting the large signal-to-noise ratio and fast collection time in small thicknesses (1 ns in 50 μm) of LGADs, the second to measure the beam energy with time-of-flight techniques, using LGADs optimized for excellent time resolutions (Ultra Fast Silicon Detectors, UFSDs). The preliminary results of first beam tests with therapeutic beam will be presented and discussed.

Proton spectra from 800 MeV protons on selected nuclei. Progress report, January 1, 1979-December 31, 1979

International Nuclear Information System (INIS)

Stearns, R.L.

1979-09-01

The emission of protons from targets of 6 Li, Li, 12 C, 27 Al, 40 Ca, 51 V, 90 Zr, and Pb under bombardment from 800 MeV protons was studied using the high resolution proton spectrometer at the Los Alamos Meson Physics Facility. Laboratory scattering angles of 5, 7, 9, 11, 13, 15, 20, 25, and 30 0 were measured, with special emphasis on the quasi-free region. Outgoing momenta corresponding to the region of pion production were examined at 11 and 15 0 . Absolute cross sections derived by reference to known (p,p) scattering data at 800 MeV. The quasi-free scattering has been fit with a DWIA analysis by summing over the unobserved (struck) nucleon. The systematics of proton production and the applicability of the DWIA analyses are discussed. 26 references

Performance of 3-D architecture silicon sensors after intense proton irradiation

CERN Document Server

Parker, S I

2001-01-01

Silicon detectors with a three-dimensional architecture, in which the n- and p-electrodes penetrate through the entire substrate, have been successfully fabricated. The electrodes can be separated from each other by distances that are less than the substrate thickness, allowing short collection paths, low depletion voltages, and large current signals from rapid charge collection. While no special hardening steps were taken in this initial fabrication run, these features of three dimensional architectures produce an intrinsic resistance to the effects of radiation damage. Some performance measurements are given for detectors that are fully depleted and working after exposures to proton beams with doses equivalent to that from slightly more than ten years at the B-layer radius (50 mm) in the planned Atlas detector at the Large Hadron Collider at CERN. (41 refs).

SU-E-J-91: Novel Epitaxial Silicon Array for Quality Assurance in Photon and Proton Therapy

International Nuclear Information System (INIS)

Talamonti, C; Zani, M; Scaringella, M; Bruzzi, M; Bucciolini, M; Menichelli, D; Friedl, F

2014-01-01

Purpose: to demonstrate suitability of a novel silicon array for measuring the dose properties of highly conformal photon and proton beams. Methods: prototype under test is a 24cm long linear array prototype, although the underlying technology is suitable to construct 2D arrays as well. It is based on a 64pixels monolithic sensor with 1mm pixel pitch, made of epitaxial ptype silicon. Thanks to design modularity, more sensors can be placed side by side without breaking pixel pitch. Flattened and unflattened photon beams, as well as proton radiation from a cyclotron in pencil beam scanning mode, were considered. Measurements of beam characteristics as percentage depth doses, dose profiles, output factors and energy response, which are necessary to deliver radiation with high precision and reliability, were performed. Results: Dose rate independence with photons was verified in the dose per pulse range 0.03 to 2mGy. Results clearly indicate nondependence of the detector sensitivity both for flattened and unflattened beams, with a variation of at most 0.5percentage. OFs were obtained for field with a lateral size ranging from 0.8cm to 16cm and the results are in good agreement with ion chamber A1SL, max difference less than 1.5percentage. Field sizes and beam penumbra were measured and compared to EBT film results. Concerning proton beams, sensitivity independence on dose rate was verified by changing the beam current in the interval 2-130Gy/s. Field sizes and beam penumbra measurements are in agreement with data taken with a scintillating 2D array with 0.5mm resolution IBA Lynx, and a better penumbra definition than an array of ionization chambers IBA MatriXX is reached. Conclusion: The device is a novel and valuable tool for QA both for photon and proton dose delivery. All measurements demonstrated its capability to measure with high spatial resolution many crucial properties of the RT beam

SU-E-J-91: Novel Epitaxial Silicon Array for Quality Assurance in Photon and Proton Therapy

Energy Technology Data Exchange (ETDEWEB)

Talamonti, C; Zani, M; Scaringella, M; Bruzzi, M; Bucciolini, M [University of Florence, Firenze (Italy); Menichelli, D; Friedl, F [IBA Dosimetry, Schwarzenbruck, Bavaria (Germany)

2014-06-01

Purpose: to demonstrate suitability of a novel silicon array for measuring the dose properties of highly conformal photon and proton beams. Methods: prototype under test is a 24cm long linear array prototype, although the underlying technology is suitable to construct 2D arrays as well. It is based on a 64pixels monolithic sensor with 1mm pixel pitch, made of epitaxial ptype silicon. Thanks to design modularity, more sensors can be placed side by side without breaking pixel pitch. Flattened and unflattened photon beams, as well as proton radiation from a cyclotron in pencil beam scanning mode, were considered. Measurements of beam characteristics as percentage depth doses, dose profiles, output factors and energy response, which are necessary to deliver radiation with high precision and reliability, were performed. Results: Dose rate independence with photons was verified in the dose per pulse range 0.03 to 2mGy. Results clearly indicate nondependence of the detector sensitivity both for flattened and unflattened beams, with a variation of at most 0.5percentage. OFs were obtained for field with a lateral size ranging from 0.8cm to 16cm and the results are in good agreement with ion chamber A1SL, max difference less than 1.5percentage. Field sizes and beam penumbra were measured and compared to EBT film results. Concerning proton beams, sensitivity independence on dose rate was verified by changing the beam current in the interval 2-130Gy/s. Field sizes and beam penumbra measurements are in agreement with data taken with a scintillating 2D array with 0.5mm resolution IBA Lynx, and a better penumbra definition than an array of ionization chambers IBA MatriXX is reached. Conclusion: The device is a novel and valuable tool for QA both for photon and proton dose delivery. All measurements demonstrated its capability to measure with high spatial resolution many crucial properties of the RT beam.

Channeling studies of impurity-defect interactions in silicon

International Nuclear Information System (INIS)

Wiggers, L.W.

1978-01-01

This thesis deals with the mechanism of defect production and interaction of introduced defects with impurity atoms in silicon single crystals. Defects are created by irradiation with energetic light particles (.2 - 3 MeV H + or He + ions). Mostly simple defects like vacancies and interstitials are produced during bombardment. (Auth.)

Ion bombardment modification of surfaces

International Nuclear Information System (INIS)

Auciello, O.

1984-01-01

An historical overview of the main advances in the understanding of bombardment-induced surface topography is presented. The implantation and sputtering mechanisms which are relevant to ion bombardment modification of surfaces and consequent structural, electronic and compositional changes are described. Descriptions of plasma and ion-beam sputtering-induced film formation, primary ion-beam deposition, dual beam techniques, cluster of molecule ion-beam deposition, and modification of thin film properties by ion bombardment during deposition are presented. A detailed account is given of the analytical and computational modelling of topography from the viewpoint of first erosion theory. Finally, an account of the possible application and/or importance of textured surfaces in technologies and/or experimental techniques not considered in previous chapters is presented. refs.; figs.; tabs

Study of proton radioactivities

Energy Technology Data Exchange (ETDEWEB)

Davids, C.N.; Back, B.B.; Henderson, D.J. [and others

1995-08-01

About a dozen nuclei are currently known to accomplish their radioactive decay by emitting a proton. These nuclei are situated far from the valley of stability, and mark the very limits of existence for proton-rich nuclei: the proton drip line. A new 39-ms proton radioactivity was observed following the bombardment of a {sup 96}Ru target by a beam of 420-MeV {sup 78}Kr. Using the double-sided Si strip detector implantation system at the FMA, a proton group having an energy of 1.05 MeV was observed, correlated with the implantation of ions having mass 167. The subsequent daughter decay was identified as {sup 166}Os by its characteristic alpha decay, and therefore the proton emitter is assigned to the {sup 167}Ir nucleus. Further analysis showed that a second weak proton group from the same nucleus is present, indicating an isomeric state. Two other proton emitters were discovered recently at the FMA: {sup 171}Au and {sup 185}Bi, which is the heaviest known proton radioactivity. The measured decay energies and half-lives will enable the angular momentum of the emitted protons to be determined, thus providing spectroscopic information on nuclei that are beyond the proton drip line. In addition, the decay energy yields the mass of the nucleus, providing a sensitive test of mass models in this extremely proton-rich region of the chart of the nuclides. Additional searches for proton emitters will be conducted in the future, in order to extend our knowledge of the location of the proton drip line.

Adhesion of silver films to ion-bombarded alumina

International Nuclear Information System (INIS)

Erck, R.A.; Fenske, G.R.

1990-01-01

This paper reports on silver films deposited on alumina substrates using ion bombardment. Adhesion strength was measured as a function of deposition conditions, sputter-cleaning time, and bombarding ion species, using a pull-type adhesion tester. Argon- and argon/oxygen-ion sputtering produced large increases in adhesion strength, with the greatest increases occurring for oxygen-ion bombardment. Adhesion strength increased monotonically as a function of ion sputtering time. At a given deposition rate, further enhancement of adhesion is seen with concurrent ion bombardment

INC Model interpretation of the proton induced residual nuclide production cross sections below 2 GeV

International Nuclear Information System (INIS)

Divadeenam, M.; Ward, T.E.; Spergel, M.S.; Lakatos, S.; Manche, E.P.

1991-01-01

For the purposes of interpreting the abundances of various isotopes in meteorites or on lunar and planetary surfaces exposed to fragmentation by cosmic rays, Webber et al. recently reported the measured total elemental and isotopic cross sections with heavy ions as projectiles on H, He, and C targets with beam energies of 0.33 - 1.7 GeV/nucleon. We employ the INC model to predict the fragmentation of the heavy ions in a hydrogen target with the inverse reaction process: proton bombardment of a heavy-ion nucleus leading to spallation products. Charge-changing and mass-changing cross sections are calculated for proton bombardment of an 56 Fe target with beam energies ranging from 0.33 to 1.88 GeV. Total Z-changing and A-changing cross sections in the energy range 0.6 to 1.88 GeV are in excellent agreement with the corresponding experimental data of Webber et al. and Westfall at al., while the agreement below 0.6 GeV proton energy is not as good. The general trend of the Z-changing cross sections are reproduced by the model calculations at each proton incident energy. The interaction of 200-MeV protons with synthetic Stony Meteorite samples was undertaken to explain radionuclide production in a cosmic-ray environment. The BNL Linac 200-MeV-proton beam was used to irradiate synthetic Stony Meteorites to simulate cosmic-ray exposures corresponding to 6.4 and 16.4 million years. Each irradiated sample was analyzed with the help of a high-resolution gamma-ray spectrometer for long-lived radioisotopes. The intranuclear cascade code HETC was employed to simulate the 200-MeV proton bombardment on the meteorite samples to predict the radionuclides 7 Be, 22 Na, 46 Mn, and 56 Co produced in the experimental investigation

Secondary electron emission from 0.5--2.5-MeV protons and deuterons

International Nuclear Information System (INIS)

Thornton, T.A.; Anno, J.N.

1977-01-01

Measurement of the secondary electron currents leaving Al, V, Fe, 316 stainless steel, Nb, and Mo foils undergoing 0.5--2.5-MeV proton and deuteron bombardment were made to determine the secondary electron emission ratios for these ions. The measured secondary electron yields were of the order of 1.0, with the deuterons producing generally higher yields than the protons

Surface roughening under ion bombardment

International Nuclear Information System (INIS)

Bhatia, C.S.

1982-01-01

Ion bombardment can cause roughening of a surface. Inadequate step coverage and poor adhesion of films on such surfaces are of concern. An extreme case of surface roughening results in cone formation under ion bombardment. The results of the investigation, using scanning electron microscopy, is discussed in terms of the role of (a) embedded particles, (b) impurities and (c) surface migration in cone formation on the target surface. (Auth.)

Modification of thin film properties by ion bombardment during deposition

International Nuclear Information System (INIS)

Harper, J.M.E.; Cuomo, J.J.; Gambino, R.J.; Kaufman, H.R.

1984-01-01

Many thin film deposition techniques involve some form of energetic particle bombardment of the growing film. The degree of bombardment greatly influences the film composition, structure and other properties. While in some techniques the degree of bombardment is secondary to the original process design, in recent years more deposition systems are being designed with the capability for controlled ion bombardment of thin films during deposition. The highest degree of control is obtained with ion beam sources which operate independently of the vapor source providing the thin film material. Other plasma techniques offer varying degrees of control of energetic particle bombardment. Deposition methods involving ion bombardment are described, and the basic processes with which film properties are modified by ion bombardment are summarized. (Auth.)

Radiation damage and defect behavior in proton irradiated lithium-counterdoped n+p silicon solar cells

Science.gov (United States)

Stupica, John; Goradia, Chandra; Swartz, Clifford K.; Weinberg, Irving

1987-01-01

Two lithium-counterdoped n+p silicon solar cells with different lithium concentrations were irradiated by 10-MeV protons. Cell performance was measured as a function of fluence, and it was found that the cell with the highest concentration of lithium had the highest radiation resistance. Deep level transient spectroscopy which showed two deep level defects that were lithium related. Relating the defect energy levels obtained from this study with those from earlier work using 1-MeV electron irradiation shows no correlation of the defect energy levels. There is one marked similarity: the absence of the boron-interstitial-oxygen-interstitial defect. This consistency strengthens the belief that lithium interacts with oxygen to prevent the formation of the boron interstitial-oxygen interstitial defect. The results indicate that, in general, addition of lithium in small amounts to the p-base of a boron doped silicon solar cell such that the base remains p-type, tends to increase the radiation resistance of the cell.

Characterization of 150 $\\mu$m thick epitaxial silicon detectors from different producers after proton irradiation

CERN Document Server

Hoedlmoser, H; Haerkoenen, J; Kronberger, M; Trummer, J; Rodeghiero, P

2007-01-01

Epitaxial (EPI) silicon has recently been investigated for the development of radiation tolerant detectors for future high-luminosity HEP experiments. A study of 150 mm thick EPI silicon diodes irradiated with 24GeV=c protons up to a fluence of 3 1015 p=cm2 has been performed by means of Charge Collection Efficiency (CCE) measurements, investigations with the Transient Current Technique (TCT) and standard CV=IV characterizations. The aim of the work was to investigate the impact of radiation damage as well as the influence of the wafer processing on the material performance by comparing diodes from different manufacturers. The changes of CCE, full depletion voltage and leakage current as a function of fluence are reported. While the generation of leakage current due to irradiation is similar in all investigated series of detectors, a difference in the effective doping concentration can be observed after irradiation. In the CCE measurements an anomalous drop in performance was found even for diodes exposed to ...

Low-energy oxygen bombardment of silicon by MD simulations making use of a reactive force field

International Nuclear Information System (INIS)

Philipp, P.; Briquet, L.; Wirtz, T.; Kieffer, J.

2011-01-01

In the field of Secondary Ion Mass Spectrometry (SIMS), ion-matter interactions have been largely investigated by numerical simulations. For MD simulations related to inorganic samples, mostly classical force fields assuming stable bonding structure have been used. In materials science, level-three force fields capable of simulating the breaking and formation of chemical bonds have recently been conceived. One such force field has been developed by John Kieffer . This potential includes directional covalent bonds, Coulomb and dipolar interaction terms, dispersion terms, etc. Important features of this force field for simulating systems that undergo significant structural reorganization are (i) the ability to account for the redistribution of electron density upon ionization, formation, or breaking of bonds, through a charge transfer term, and (ii) the fact that the angular constraints dynamically adjust when a change in the coordination number of an atom occurs. In this paper, the modification of the force field to allow for an exact description of the sputtering process, the influence of this modification on previous results obtained for phase transitions in glasses as well as properties of particles sputtered at 250-1000 eV from a mono-crystalline silicon sample will be presented. The simulation results agree qualitatively with predictions from experiments or models. Most atoms are sputtered from the first monolayer: for an impact energy of 250 eV up to 86% of the atoms are sputtered from the first monolayer and for 750 eV, this percentage drops to 61%, with 89% of the atoms being sputtered from the first two monolayers. For sputtering yields, 250 and 500 eV results agree with experimental data, but for 750 eV sub-channelling in the pristine sample becomes more important than in experiments where samples turn amorphous under ion bombardment.

Demonstration of Synaptic Behaviors and Resistive Switching Characterizations by Proton Exchange Reactions in Silicon Oxide

Science.gov (United States)

Chang, Yao-Feng; Fowler, Burt; Chen, Ying-Chen; Zhou, Fei; Pan, Chih-Hung; Chang, Ting-Chang; Lee, Jack C.

2016-02-01

We realize a device with biological synaptic behaviors by integrating silicon oxide (SiOx) resistive switching memory with Si diodes. Minimal synaptic power consumption due to sneak-path current is achieved and the capability for spike-induced synaptic behaviors is demonstrated, representing critical milestones for the use of SiO2-based materials in future neuromorphic computing applications. Biological synaptic behaviors such as long-term potentiation (LTP), long-term depression (LTD) and spike-timing dependent plasticity (STDP) are demonstrated systematically using a comprehensive analysis of spike-induced waveforms, and represent interesting potential applications for SiOx-based resistive switching materials. The resistive switching SET transition is modeled as hydrogen (proton) release from (SiH)2 to generate the hydrogen bridge defect, and the RESET transition is modeled as an electrochemical reaction (proton capture) that re-forms (SiH)2. The experimental results suggest a simple, robust approach to realize programmable neuromorphic chips compatible with large-scale CMOS manufacturing technology.

Recovery of indium-tin-oxide/silicon heterojunction solar cells by thermal annealing

OpenAIRE

Morales Vilches, Ana Belén; Voz Sánchez, Cristóbal; Colina Brito, Mónica Alejandra; López Rodríguez, Gema; Martín García, Isidro; Ortega Villasclaras, Pablo Rafael; Orpella García, Alberto; Alcubilla González, Ramón

2014-01-01

The emitter of silicon heterojunction solar cells consists of very thin hydrogenated amorphous silicon layers deposited at low temperature. The high sheet resistance of this type of emitter requires a transparent conductive oxide layer, which also acts as an effective antireflection coating. The deposition of this front electrode, typically by Sputtering, involves a relatively high energy ion bombardment at the surface that could degrade the emitter quality. The work function of the tra...

Study of the out-of-plane emission of protons and light fragments in symmetric heavy-ion collisions

International Nuclear Information System (INIS)

Brill, D.; Beckerle, P.; Bormann, C.; Schwab, E.; Shin, Y.; Stock, R.; Stroebele, H.; Baltes, P.; Muentz, C.; Oeschler, H.; Sturm, C.; Wagner, A.; Barth, R.; Cieslak, M.; Debowski, M.; Grosse, E.; Koczon, P.; Mang, M.; Miskowiec, D.; Schicker, R.; Senger, P.; Kohlmeyer, B.; Puehlhofer, F.; Speer, J.; Voelkel, K.; Walus, W.

1996-01-01

Midrapidity protons from 209 Bi+ 209 Bi collisions were measured with the Kaon Spectrometer at SIS at incident energies of E Lab /A=400, 700 and 1000 MeV. Additionally, light fragments were analysed at 400 MeV. We have investigated the azimuthal emission pattern of the particles relative to the reaction plane as function of transverse momentum, bombarding energy and impact parameter. We observe an enhanced emission of particles perpendicular to the reaction plane at all bombarding energies. The ratio of the number of particles emitted out-of-plane/in-plane increases strongly with the particles transverse momentum. The anisotropy decreases with increasing beam energy. Composite particles show a much stronger effect than protons. (orig.)

Implantation of xenon in amorphous carbon and silicon for brachytherapy application

International Nuclear Information System (INIS)

Marques, F.C.; Barbieri, P.F.; Viana, G.A.; Silva, D.S. da

2013-01-01

We report a procedure to implant high dose of xenon atoms (Xe) in amorphous carbon, a-C, and amorphous silicon, a-Si, for application in brachytherapy seeds. An ion beam assisted deposition (IBAD) system was used for the deposition of the films, where one ion gun was used for sputtering a carbon (or silicon) target, while the other ion gun was used to simultaneously bombard the growing film with a beam of xenon ion Xe + in the 0–300 eV range. Xe atoms were implanted into the film with concentration up to 5.5 at.%, obtained with Xe bombardment energy in the 50–150 eV range. X-ray absorption spectroscopy was used to investigate the local arrangement of the implanted Xe atoms through the Xe L III absorption edge (4.75 keV). It was observed that Xe atoms tend to agglomerate in nanoclusters in a-C and are dispersed in a-Si.

Deposition of silicon oxynitride films by low energy ion beam assisted nitridation at room temperature

Science.gov (United States)

Youroukov, S.; Kitova, S.; Danev, G.

2008-05-01

The possibility is studied of growing thin silicon oxynitride films by e-gun evaporation of SiO and SiO2 together with concurrent bombardment with low energy N2+ ions from a cyclotron resonance (ECR) source at room temperature of substrates. The degree of nitridation and oxidation of the films is investigated by means of X-ray spectroscopy. The optical characteristics of the films, their environmental stability and adhesion to different substrates are examined. The results obtained show than the films deposited are transparent. It is found that in the case of SiO evaporation with concurrent N2+ ion bombardment, reactive implantation of nitrogen within the films takes place at room temperature of the substrate with the formation of a new silicon oxynitride compound even at low ion energy (150-200 eV).

Proton induced X-ray emission (PIXE) analysis at Lucas Heights

International Nuclear Information System (INIS)

Cohen, D.; Duerden, P.

1979-02-01

The state of the proton induced X-ray emission (PIXE) work at Lucas Heights is reported together with a full description of the experimental arrangement and its use for analysis of trace elements (Z >or= 14). The fundamentals of PIXE are examined in detail with a view to understanding not only the background continuum but also the X-ray production mechanisms. Quantitative predictions for the number of X-rays detected after proton bombardment of the target have been made and these compare well with experiments

Secondary electron emission in nanostructured porous silicon

Energy Technology Data Exchange (ETDEWEB)

Ruano, G D; Ferron, J; Koropecki, R R, E-mail: gdruano@ceride.gov.a [INTEC-UNL-CONICET, Gueemes 3450 - 3000 Santa Fe (Argentina)

2009-05-01

We studied the reversible reduction induced by ion bombardment of the secondary electron emission (SEE) yield. This effect has been modelled as due to changes in dynamically sustained dipoles related with ions and electrons penetration ranges. Such charge configuration precludes the escape of electrons from the nanoporous silicon, making the SEE dependent on the flux of impinging ions. Since this dipolar momentum depends on the electric conduction of the porous medium, by controlled oxidation of the nanoporous structure we change the conduction features of the sample, studying the impact on the SEE reduction effect. Li ion bombardment was also used with the intention of changing the parameters determining the effect. FT-IR and Auger electron spectroscopy were used to characterize the oxidation degree of the samples at different depth scales

Multi-element analysis of the rat hippocampus by proton induced x-ray emission spectroscopy (phosphorus, sulfur, chlorine, potassium, calcium, iron, zinc, copper, lead, bromine, and rubidium)

Energy Technology Data Exchange (ETDEWEB)

Kemp, K.; Danscher, G.

1979-01-22

A technique for multi-element analysis of brain tissue by proton induced x-ray emission spectroscopy (PIXE) is described and data from analysis of fixed and unfixed samples from rat hippocampus, neocortex, amygdala, and spinal cord are presented and commented on. The atoms present in the tissue are bombarded with protons which cause the ejection of electrons from the inner shells. When the holes are refilled with electrons from outer shells, x-ray quanta characteristic for each element are emitted. Using a high resolution energy dispersive detector, a complete x-ray spectrum of the specimen can be recorded in a single measurement. Detection limits less than or approximately 5 ppM of dry matter are obtained for most elements with atomic number greater than 14 (silicon). Around 13 elements were found in concentrations above the detection limits. The grand means for non-fixed hippocampi were e.g., for Zn-120 ppM; Rb-20 ppM; Fe-150 ppM; Pb-3 ppM; Ni-5 ppM.

Distribution of nuclear charge in the proton-induced fission of Th-232

Energy Technology Data Exchange (ETDEWEB)

Pate, B D [Brookhaven National Laboratory, Upton, New York (United States); Foster, J S; Yaffe, L [McGill Univ., Montreal, Quebec (Canada)

1958-09-15

A great deal of work has been done on the distribution of nuclear mass in the fission process. About the nuclear charge distribution less is known. Data exist on the distribution from the fission of U-235 with thermal neutrons and with 14 Mev neutrons. Data also exist for the fission of uranium by 170 Mev protons, of bismuth by 190 Mev deuterons, and of uranium, thorium and bismuth by 480 Mev protons, and there is fragmentary information from other systems. The present work was undertaken to investigate the changes that occur in the charge distribution from proton-induced fission of Th-232 as the bombarding energy is raised from 8 to 90 Mev, the maximum proton energy of the McGill synchrocyclotron. This energy range is of interest in view of the substantial changes observed in the mass distribution. Also in this interval a change presumably begins in the nature of the initial step in nuclear reactions, from simple compound-nucleus formation, to a mechanism of direct interaction with individual nucleons. Thus at the lower energies studied, excitation of the nuclei at the end of the first step of the reaction will be essentially monochromatic whereas at the higher end of the bombarding-energy range, a broad spectrum of excitation energies will be produced, with corresponding complexity of the reaction products observed. (author)

Deposition of silicon oxynitride films by low energy ion beam assisted nitridation at room temperature

Energy Technology Data Exchange (ETDEWEB)

Youroukov, S; Kitova, S; Danev, G [Central Laboratory of Photoprocesses, Bulgarian Academy of Sciences, Acad. G. Bonchev Str., Bl. 109, 113 Sofia (Bulgaria)], E-mail: skitova@clf.bas.bg

2008-05-01

The possibility is studied of growing thin silicon oxynitride films by e-gun evaporation of SiO and SiO{sub 2} together with concurrent bombardment with low energy N{sub 2}{sup +} ions from a cyclotron resonance (ECR) source at room temperature of substrates. The degree of nitridation and oxidation of the films is investigated by means of X-ray spectroscopy. The optical characteristics of the films, their environmental stability and adhesion to different substrates are examined. The results obtained show than the films deposited are transparent. It is found that in the case of SiO evaporation with concurrent N{sub 2}{sup +} ion bombardment, reactive implantation of nitrogen within the films takes place at room temperature of the substrate with the formation of a new silicon oxynitride compound even at low ion energy (150-200 eV)

Comparison of pad detectors produced on different silicon materials after irradiation with neutrons, protons and pions

International Nuclear Information System (INIS)

Kramberger, G.; Cindro, V.; Dolenc, I.; Mandic, I.; Mikuz, M.; Zavrtanik, M.

2010-01-01

A set of 44 pad detectors produced on p- and n-type MCz and Fz wafers was irradiated with 23 GeV protons, 200 MeV pions and reactor neutrons up to the equivalent fluences of Φ eq =3x10 15 cm -2 . The evolution of the full depletion voltage and the leakage current were monitored during short- and long-term annealing. At selected representative annealing steps, charge collection measurements were performed for all samples with LHC speed electronics. Measurements of full depletion voltage, leakage current and charge collection efficiency were compared for different irradiation particles and silicon materials.

Comparison of pad detectors produced on different silicon materials after irradiation with neutrons, protons and pions

Energy Technology Data Exchange (ETDEWEB)

Kramberger, G., E-mail: Gregor.Kramberger@ijs.s [Jozef Stefan Institute and Department of Physics, University of Ljubljana, SI-1000 Ljubljana (Slovenia); Cindro, V.; Dolenc, I.; Mandic, I.; Mikuz, M.; Zavrtanik, M. [Jozef Stefan Institute and Department of Physics, University of Ljubljana, SI-1000 Ljubljana (Slovenia)

2010-01-01

A set of 44 pad detectors produced on p- and n-type MCz and Fz wafers was irradiated with 23 GeV protons, 200 MeV pions and reactor neutrons up to the equivalent fluences of PHI{sub eq}=3x10{sup 15}cm{sup -2}. The evolution of the full depletion voltage and the leakage current were monitored during short- and long-term annealing. At selected representative annealing steps, charge collection measurements were performed for all samples with LHC speed electronics. Measurements of full depletion voltage, leakage current and charge collection efficiency were compared for different irradiation particles and silicon materials.

Flexible, durable proton energy degraders for the GE PETtrace

DEFF Research Database (Denmark)

Engle, J. W.; Gagnon, K.; Severin, Gregory

2012-01-01

In order to limit the formation of radioisotopic impurities during proton bombardments of solid targets, two methods of introducing degrader foils into the beam upstream of the target were tested. The first design uses a 445 μm thick fixed degrader machined from a single piece of aluminum....... The second design permits introduction of foils made of any material and was tested with foils as thick as 635 μm (also aluminium). In both cases, the foils are cooled with by water flowing through an annular channel outside the radius of the beam. Both designs proved durable and tolerated proton beam...

Si Micro-turbine by Proton BeamWriting and Porous Silicon Micromachining

International Nuclear Information System (INIS)

Rajta, I.; Szilasi, S.Z.; Fekete, Z.

2008-01-01

aspect ratio, completely or partially released microelements embedded in a cavity or a channel, thereby enabling us to form mobile components in the microfluidic MEMS. Although the process opens a new way in micromachining, the widening of the implanted regions around the projected range limits the dimensions and the geometry of the processed devices. The described technique can be exploited in fabrication of various MEMS with embedded mobile elements. This work is the first demonstration of a silicon device containing a moving part made by proton beam writing. Acknowledgements The support of the Hungarian National Research Found (OTKA) via grants T047002, A080, M041939, M36324 and F042474; and EU co-funded Economic Competitiveness Operative Programme (GVOP-3.2.1.-2004-04-0402/3.0) is gratefully acknowledged. The authors also thank the contribution of Dr. A.L. Toth with SEM analysis and Mr. B. Forgacs with design and fabrication of plastic encapsulation of the microturbine chip

On the inclusion of macroscopic theory in Monte Carlo simulation using game theory

International Nuclear Information System (INIS)

Tatarkiewicz, J.

1980-01-01

This paper presents the inclusion of macroscopic damage theory into Monte Carlo particle-range simulation using game theory. A new computer code called RADDI was developed on the basis of this inclusion. Results of Monte Carlo damage simulation after 6.3 MeV proton bombardment of silicon are compared with experimental data of Bulgakov et al. (orig.)

Cleaning of diffusion bonding surface by argon ion bombardment treatment

International Nuclear Information System (INIS)

Wang, Airu; Ohashi, Osamu; Yamaguchi, Norio; Aoki, Masanori; Higashi, Yasuo; Hitomi, Nobuteru

2003-01-01

The specimens of oxygen-free high conductivity copper, SUS304L stainless steel and pure iron were treated by argon ion bombardment and then were bonded by diffusion bonding method. The effects of argon ion bombardment treatment on faying surface morphology, tensile strength of bonding joints and inclusions at the fracture surface were investigated. The results showed that argon ion bombardment treatment was effective to remove the oxide film and contamination at the faying surface and improve the quality of joints. The tensile strength of the bonded joints was improved, and minimum bonding temperature to make the metallic bonding at the interface was lowered by argon ion bombardment treatment. At the joints with argon ion bombardment treatment, ductile fractured surface was seen and the amount of inclusions was obviously decreased

Electron and ion beam degradation effects in AES analysis of silicon nitride thin films

International Nuclear Information System (INIS)

Fransen, F.; Vanden Berghe, R.; Vlaeminck, R.; Hinoul, M.; Remmerie, J.; Maes, H.E.

1985-01-01

Silicon nitride films are currently investigated by AES combined with ion profiling techniques for their stoichiometry and oxygen content. During this analysis, ion beam and primary electron effects were observed. The effect of argon ion bombardment is the preferential sputtering of nitrogen, forming 'covalent' silicon at the surface layer (AES peak at 91 eV). The electron beam irradiation results in a decrease of the covalent silicon peak, either by an electron beam annealing effect in the bulk of the silicon nitride film, or by an ionization enhanced surface diffusion process of the silicon (electromigration). By the electron beam annealing, nitrogen species are liberated in the bulk of the silicon nitride film and migrate towards the surface where they react with the covalent silicon. The ionization enhanced diffusion originates from local charging of the surface, induced by the electron beam. (author)

X-ray diffraction patterns in high-energy proton implanted silicon

International Nuclear Information System (INIS)

Wieteska, K.; Dluzewska, K.D.; Wierzchowski, W.; Graeff, W.

1998-01-01

Silicon crystals implanted with 1 and 1.6 MeV protons were studied by means of conventional source double-crystal and synchrotron multi-crystal arrangements. Both the rocking curves and series of topographs were recorded in different parallel settings employing different reflections and wavelengths of radiation. A comparison of rocking curves in different regions of implanted areas was performed in synchrotron multi-crystal arrangement with a beam of a very small diameter. The rocking curves exhibited subsidiary interference maxima with increasing periodicity on the low angle side. The plane wave topographs taken at different angular setting revealed characteristic fringes whose number decreased with increasing distance from the main maximum. The fringe pattern did not depend on the direction of the diffraction vector. The number of fringes for equivalent angular distance from the maximum was larger for higher order of reflection. The shape of the rocking curve and other diffraction patterns were reasonably explained assuming the lattice parameter change depth distribution proportional to the profile obtained from the Biersack-Ziegler theory and lateral non-uniformity of ion dose. A good approximation of the experimental results was obtained using numerical integration of the Takagi-Taupin equations. (orig.)

Hydrogenated amorphous silicon thin film anode for proton conducting batteries

Science.gov (United States)

Meng, Tiejun; Young, Kwo; Beglau, David; Yan, Shuli; Zeng, Peng; Cheng, Mark Ming-Cheng

2016-01-01

Hydrogenated amorphous Si (a-Si:H) thin films deposited by chemical vapor deposition were used as anode in a non-conventional nickel metal hydride battery using a proton-conducting ionic liquid based non-aqueous electrolyte instead of alkaline solution for the first time, which showed a high specific discharge capacity of 1418 mAh g-1 for the 38th cycle and retained 707 mAh g-1 after 500 cycles. A maximum discharge capacity of 3635 mAh g-1 was obtained at a lower discharge rate, 510 mA g-1. This electrochemical discharge capacity is equivalent to about 3.8 hydrogen atoms stored in each silicon atom. Cyclic voltammogram showed an improved stability 300 mV below the hydrogen evolution potential. Both Raman spectroscopy and Fourier transform infrared spectroscopy studies showed no difference to the pre-existing covalent Si-H bond after electrochemical cycling and charging, indicating a non-covalent nature of the Si-H bonding contributing to the reversible hydrogen storage of the current material. Another a-Si:H thin film was prepared by an rf-sputtering deposition followed by an ex-situ hydrogenation, which showed a discharge capacity of 2377 mAh g-1.

Activation of boron and phosphorus atoms implanted in polycrystalline silicon films at low temperatures

International Nuclear Information System (INIS)

Andoh, Nobuyuki; Sameshima, Toshiyuki; Andoh, Yasunori

2005-01-01

Phosphorus atoms implanted in laser crystallized polycrystalline silicon films were activated by a heat treatment in air at 260 deg. C for 1, 3 and 24 h. Analysis of ultraviolet reflectivity of phosphorus-doped silicon films implanted by ion doping method at 4 keV revealed that the thickness of the top disordered layer formed by ion bombardment was 6 nm. It is reduced to 4 nm by a 3 h heat treatment at 260 deg. C by recrystallization of disordered region. The electrical conductance of silicon films implanted increased to 1.7x10 5 S/sq after 3 h heat treatment

Anomalous time-of-flight distributions observed for argon implanted in silicon and resputtered by Ar+-ion bombardment

International Nuclear Information System (INIS)

van Veen, G.N.A.; Sanders, F.H.M.; Dieleman, J.; van Veen, A.; Oostra, D.J.; de Vries, A.E.

1986-01-01

A Si substrate is bombarded by 3-keV Ar + ions. From time-of-flight spectra of resputtered Ar neutrals at various target temperatures, we conclude that Ar-bubble formation takes place in the amorphized-Si top layer. The bubbles form and open during etching. The average kinetic energy of the Ar atoms is in agreement with the calculated average potential energy of the Ar atoms inside the bubbles

Selective Adsorption of Nano-bio materials and nanostructure fabrication on Molecular Resists Modified by proton beam irradiation

International Nuclear Information System (INIS)

Lee, H. W.; Kim, H. S.; Kim, S. M.

2008-04-01

The purpose of this research is the fabrication of nanostructures on silicon substrate using proton beam and selectively adsorption of bio-nano materials on the patterned substrate. Recently, the miniaturization of the integrated devices with fine functional structures was intensively investigated, based on combination of nanotechnology (NT), biotechnology (BT) and information technology (IT). Because of the inherent limitation in optical lithography, large variety of novel patterning technologies were evolved to construct nano-structures onto a substrate. Atomic force microscope-based nanolithography has readily formed sub-50 nm patterns by the local modification of a substrate using a probe with a curvature of 10 nm. The surface property was regarded as one of the most important factors for AFM-based nanolithography as well as for other novel nanolithographies. The molecular thin films such as a self-assembled monolayer or a polymer resist layer have been used as an alternative to modifying the surface property. Although proton or ion beam irradiation has been used as an efficient tool to modify the physical, chemical and electrical properties of a surface, the nano-patterning on the substrate or the molecular film modified with the beam irradiation has hardly been studied at both home and abroad. The selective adsorption of nano-bio materials such as carbon nanotubes and proteins on the patterns would contribute to developing the integrated devices. The polystyrene nanoparticles (400 nm) were arrayed on al silicon surface using nanosphere lithography and the various nanopatterns were fabricated by proton beam irradiation on the polystyrene nanoparticles arrayed silicon surface. We obtained the two different nanopatterns such as polymer nanoring patterns and silicon oxide patterns on the same silicon substrate. The polymer nanoring patterns formed by the crosslinkage of polystyrene when proton beam was irradiated at the triangular void spaces that are enclosed by

Strain of laser annealed silicon surfaces

Science.gov (United States)

Nemanich, R. J.; Haneman, D.

1982-05-01

High resolution Raman scattering measurements have been carried out on pulse and continuous-wave laser annealed silicon samples with various surface preparations. These included polished and ion-bombarded wafers, and saw-cut crystals. The pulse annealing treatments were carried out in ultrahigh vacuum and in air. The residual strain was inferred from the frequency shift of the first-order Raman active mode of Si, and was detectable in the range 10-2-10-3 in all except the polished samples.

The annealing of interstitial carbon atoms in high-resistivity n-type silicon after proton irradiation

CERN Document Server

Kuhnke, M; Lindström, G

2002-01-01

The annealing of interstitial carbon C sub i after 7-10 MeV and 23 GeV proton irradiations at room temperature in high-resistivity n-type silicon is investigated. Deep level transient spectroscopy is used to determine the defect parameters. The annealing characteristics of the impurity defects C sub i , C sub i C sub s , C sub i O sub i and VO sub i suggest that the mobile C sub i atoms are also captured at divacancy VV sites at the cluster peripheries and not only at C sub s and O sub i sites in the silicon bulk. The deviation of the electrical filling characteristic of C sub i from the characteristic of a homogeneously distributed defect can be explained by an aggregation of C sub i atoms in the environment of the clusters. The capture rate of electrons into defects located in the cluster environment is reduced due to a positive space charge region surrounding the negatively charged cluster core. The optical filling characteristic of C sub i suggests that the change of the triangle-shaped electric field dis...

Studying the destruction of various fluoropolymers caused by gamma - irradiation and MeV protons

International Nuclear Information System (INIS)

Allayarov, S.R.; Ol'khov, Yu.A.; Gordon, D.A.; Muntele, C.I.; Muntele, I.C.; Ila, D.; Dixon, D.A.; Kispert, L.D.; Nikolskij, V.G.

2007-01-01

While fluoropolymers are normally used as anti-adherent coating, they are intensely investigated for potential use in various radiation dosimeter applications as well as space technology. In order to understand the discrepancy between high chemical and thermal stability and low radiation stability of various fluoropolymers, we are bombarding them with 1 MeV protons to fluences up to 2·10 15 protons/cm 2 as well as subjected some of them to gamma-irradiation by dose of 10 kGy. During bombardment we are monitoring the emission of chemical species with a residual gas analyzer. Gamma-irradiated samples were tested by radio thermoluminescence method. The results we present here are a good indicator that material damage happens much earlier than 2·10 15 protons/cm 2 and that further work should be addressed at much smaller exposures. Radio thermoluminescence also can be used at small doses of irradiation (10-30 kGy). The thermomechanical curve of radiation-free polyvinyledenefluoride (PVDF) is characteristic for topologically di-block amorphous polymer of quasi-crossing structure. In the temperature range of from 173 K up to 228 K polymer is vitrified. The vitrification temperature of PVDF is 228 K. All molecular-relaxation and quantitative characteristics of PVDF were determined before and after its irradiation by protons. Protons caused significant changes in PVDF. From di-block amorphous it transformed in to amorphous-crystalline structure. An appreciable influence of dose at proton irradiation of polymer was revealed both on topological level and on molecular-relaxation one. (authors)

Characterization of Czochralski Silicon Detectors

OpenAIRE

Luukka, Panja-Riina; Haerkoenen, Jaakko

2012-01-01

This thesis describes the characterization of irradiated and non-irradiated segmenteddetectors made of high-resistivity (>1 kΩcm) magnetic Czochralski (MCZ) silicon. It isshown that the radiation hardness (RH) of the protons of these detectors is higher thanthat of devices made of traditional materials such as Float Zone (FZ) silicon or DiffusionOxygenated Float Zone (DOFZ) silicon due to the presence of intrinsic oxygen (> 5 x1017 cm-3). The MCZ devices therefore present an interesting alter...

Mercury's Surface Magnetic Field Determined from Proton-Reflection Magnetometry

Science.gov (United States)

Winslow, Reka M.; Johnson, Catherine L.; Anderson, Brian J.; Gershman, Daniel J.; Raines, Jim M.; Lillis, Robert J.; Korth, Haje; Slavin, James A.; Solomon, Sean C.; Zurbuchen, Thomas H.;

Flexible, durable proton energy degraders for the GE PETtrace

Energy Technology Data Exchange (ETDEWEB)

Engle, J. W.; Gagnon, K.; Severin, G. W.; Valdovinos, H. F.; Nickles, R. J.; Barnhart, T. E. [Chemistry Division - Isotopes, Inorganics and Actinides, Los Alamos National Laboratory, Los Alamos, NM (United States); Department of Radiation Oncology, University of Washington, Seattle, WA (United States); Hevesy Laboratory, Danish Technical University, Risoe (Denmark); Department of Medical Physics, University of Wisconsin, WI, Madison (United States)

2012-12-19

In order to limit the formation of radioisotopic impurities during proton bombardments of solid targets, two methods of introducing degrader foils into the beam upstream of the target were tested. The first design uses a 445 {mu}m thick fixed degrader machined from a single piece of aluminum. The second design permits introduction of foils made of any material and was tested with foils as thick as 635 {mu}m (also aluminium). In both cases, the foils are cooled with by water flowing through an annular channel outside the radius of the beam. Both designs proved durable and tolerated proton beam currents in excess of 80 {mu}A.

Experimental study of the response of radiochromic films to proton radiation of low energy

International Nuclear Information System (INIS)

Mercado-Uribe, H.; Gamboa-deBuen, I.; Buenfil, A.E.; Avila, O.; Brandan, M.E.

2009-01-01

We have investigated the response of radiochromic films (MD-55 and HD-810) exposed to protons of 0.6 MeV. Each film is bombarded with a proton beam in an angular geometry, in such a way that the absorbed dose is related to angle. Depending on the energy and the angular fluence, the irradiated volume is total or partial. We compare the dose of these irradiated films with fully irradiated films exposed to γ radiation from a 60 Co calibrated source.

Modification of thin film properties by ion bombardment during deposition

International Nuclear Information System (INIS)

Harper, J.M.E.; Cuomo, J.J.; Gambino, R.J.; Kaufman, H.R.

1984-01-01

Deposition methods involving ion bombardment are described, and the basic processes with which film properties are modified by ion bombardment are summarized. Examples of thin film property modification by ion bombardment during deposition, including effects which are primarily compositional as well as those which are primarily structural are presented. The examples demonstrate the usefulness of ion beam techniques in identifying and controlling the fundamental deposition parameters. 68 refs.; 15 figs.; 1 table

Characterization of Czochralski silicon detectors

OpenAIRE

Luukka, Panja-Riina

2006-01-01

This thesis describes the characterization of irradiated and non-irradiated segmented detectors made of high-resistivity (>1 kΩcm) magnetic Czochralski (MCZ) silicon. It is shown that the radiation hardness (RH) of the protons of these detectors is higher than that of devices made of traditional materials such as Float Zone (FZ) silicon or Diffusion Oxygenated Float Zone (DOFZ) silicon due to the presence of intrinsic oxygen (> 5 × 1017 cm−3). The MCZ devices therefore present an interesting ...

Efficient and rapid C. elegans transgenesis by bombardment and hygromycin B selection.

Directory of Open Access Journals (Sweden)

Inja Radman

Full Text Available We report a simple, cost-effective, scalable and efficient method for creating transgenic Caenorhabditis elegans that requires minimal hands-on time. The method combines biolistic bombardment with selection for transgenics that bear a hygromycin B resistance gene on agar plates supplemented with hygromycin B, taking advantage of our observation that hygromycin B is sufficient to kill wild-type C. elegans at very low concentrations. Crucially, the method provides substantial improvements in the success of bombardments for isolating transmitting strains, the isolation of multiple independent strains, and the isolation of integrated strains: 100% of bombardments in a large data set yielded transgenics; 10 or more independent strains were isolated from 84% of bombardments, and up to 28 independent strains were isolated from a single bombardment; 82% of bombardments yielded stably transmitting integrated lines with most yielding multiple integrated lines. We anticipate that the selection will be widely adopted for C. elegans transgenesis via bombardment, and that hygromycin B resistance will be adopted as a marker in other approaches for manipulating, introducing or deleting DNA in C. elegans.

Molecular projectile effects for kinetic electron emission from carbon- and metal-surfaces bombarded by slow hydrogen ions

Science.gov (United States)

Cernusca, S.; Winter, HP.; Aumayr, F.; Díez Muiño, R.; Juaristi, J. I.

2003-04-01

Total yields for kinetic electron emission (KE) have been determined for impact of hydrogen monomer-, dimer- and trimer-ions (impact energy armour in magnetic fusion devices. The data are compared with KE yields for impact of same projectile ions on atomically clean highly oriented pyrolytic graphite and polycrystalline gold. We discuss KE yields for the different targets if bombarded by equally fast molecular and atomic ions in view to "projectile molecular effects" (different yields per proton for equally fast atomic and molecular ions), which are expected from calculated electronic projectile energy losses in these target materials.

Investigation of proton spin relaxation in water with dispersed silicon nanoparticles for potential magnetic resonance imaging applications

Science.gov (United States)

Kargina, Yu. V.; Gongalsky, M. B.; Perepukhov, A. M.; Gippius, A. A.; Minnekhanov, A. A.; Zvereva, E. A.; Maximychev, A. V.; Timoshenko, V. Yu.

2018-03-01

Porous and nonporous silicon (Si) nanoparticles (NPs) prepared by ball-milling of electrochemically etched porous Si layers and crystalline Si wafers were studied as potential agents for enhancement of the proton spin relaxation in aqueous media. While nonporous Si NPs did not significantly influence the spin relaxation, the porous ones resulted in strong shortening of the transverse relaxation times. In order to investigate an effect of the electron spin density in porous Si NPs on the proton spin relaxation, we use thermal annealing of the NPs in vacuum or in air. The transverse relaxation rate of about 0.5 l/(g s) was achieved for microporous Si NPs, which were thermally annealing in vacuum to obtain the electron spin density of the order of 1017 g-1. The transverse relaxation rate was found to be almost proportional to the concentration of porous Si NPs in the range from 0.1 to 20 g/l. The obtained results are discussed in view of possible biomedical applications of Si NPs as contrast agents for magnetic resonance imaging.

Effects of proton irradiation and temperature on 1 ohm-cm and 10 ohm-cm silicon solar cells

Science.gov (United States)

Nicoletta, C. A.

1973-01-01

The 1 ohm-cm and 10 ohm-cm silicon solar cells were exposed to 1.0 MeV protons at a fixed flux of 10 to the 9th power P/sq cm-sec and fluences of 10 to the 10th power, 10 to the 11th power, 10 to the 12th power and 3 X 10 to the 12th power P/sq cm. I-V curves of the cells were made at room temperature, 65 C and 165 C after each irradiation. A value of 139.5 mw/sq cm was taken as AMO incident energy rate per unit area. Degradation occurred for both uncovered 1 ohm-cm and 10 ohm-cm cells. Efficiencies are generally higher than those of comparable U.S. cells tested earlier. Damage (loss in maximum power efficiency) with proton fluence is somewhat higher for 10 ohm-cm cells, measured at the three temperatures, for fluences above 2 X 10 to the 11th power P/sq cm. Cell efficiency, as expected, changes drastically with temperature.

Relationship between defect density and charge carrier transport in amorphous and microcrystalline silicon

International Nuclear Information System (INIS)

Astakhov, Oleksandr; Carius, Reinhard; Finger, Friedhelm; Petrusenko, Yuri; Borysenko, Valery; Barankov, Dmytro

2009-01-01

The influence of dangling-bond defects and the position of the Fermi level on the charge carrier transport properties in undoped and phosphorous doped thin-film silicon with structure compositions all the way from highly crystalline to amorphous is investigated. The dangling-bond density is varied reproducibly over several orders of magnitude by electron bombardment and subsequent annealing. The defects are investigated by electron-spin-resonance and photoconductivity spectroscopies. Comparing intrinsic amorphous and microcrystalline silicon, it is found that the relationship between defect density and photoconductivity is different in both undoped materials, while a similar strong influence of the position of the Fermi level on photoconductivity via the charge carrier lifetime is found in the doped materials. The latter allows a quantitative determination of the value of the transport gap energy in microcrystalline silicon. The photoconductivity in intrinsic microcrystalline silicon is, on one hand, considerably less affected by the bombardment but, on the other hand, does not generally recover with annealing of the defects and is independent from the spin density which itself can be annealed back to the as-deposited level. For amorphous silicon and material prepared close to the crystalline growth regime, the results for nonequilibrium transport fit perfectly to a recombination model based on direct capture into neutral dangling bonds over a wide range of defect densities. For the heterogeneous microcrystalline silicon, this model fails completely. The application of photoconductivity spectroscopy in the constant photocurrent mode (CPM) is explored for the entire structure composition range over a wide variation in defect densities. For amorphous silicon previously reported linear correlation between the spin density and the subgap absorption is confirmed for defect densities below 10 18 cm -3 . Beyond this defect level, a sublinear relation is found i.e., not

Proton drip-line studies at HRIBF

International Nuclear Information System (INIS)

Rykaczewski, K.P.; Batchelder, J.C.; Bingham, C.R.; Bryan, R.E.; Davinson, T.; Woods, P.J.; Ginter, T.N.; Hamilton, J. H.; Gross, C.J.; Grzywacz, R.; Janas, Z.; Karny, M.; MacDonald, B.D.; McConnell, J.W.; Toth, K.S.; Piechaczek, A.; Zganjar, E.F.; Szerypo, J.; Walters, W. B.

2000-01-01

Proton radioactivity studies performed at the Holifield Radioactive Ion Beam Facility (HFBR) within the last few years are reviewed. The discovery of five new proton radioactivities 140 Ho, 141m Ho, 145 Tm, 150m Lu and 151m Lu is presented together with a recent observation of fine structure in proton emission from 146gs,m Tm. These proton emitters were produced by means of fusion-evaporation reactions and studied with the HFBR Recoil Mass Separator and detection system based on a Double-sided Silicon Strip Detector. For 113 Cs and 151 Lu, the studies of level structure were extended beyond the proton-emitting states via the measurements with a clover array Clarion using Recoil Decay Tagging

Adhesion of evaporated titanium films to ion-bombarded polyethylene

International Nuclear Information System (INIS)

Bodoe, P.; Sundgren, J.

1986-01-01

Ti films were deposited onto high-density polyethylene (HDPE) samples by electron-beam evaporation. Prior to film deposition the samples were in situ pretreated by Ar ion bombardment using a sputter ion gun. The adhesion of the films, determined as the pull strength required for film failure, was measured as a function of ion dose. HDPE substrates processed at two different temperatures were examined. The adhesion of the Ti films to HDPE samples processed at roughly-equal150 0 C increased with the ion dose to a steady-state value corresponding to the cohesive strength of the HDPE substrate. The adhesion to the samples processed at roughly-equal200 0 C increased to a maximum and then decreased for further ion bombardment to a level of the same order as that for films deposited onto as-prepared samples. The effects of the ion bombardment upon the HDPE surface chemistry were examined by means of x-ray photoelectron spectroscopy (XPS). The ion bombardment resulted in dehydrogenation and cross linking of the surface region and for prolonged ion bombardment, a graphitelike surface was obtained. The film/substrate interface as well as the initial Ti film growth were examined by XPS analysis. A chemical interaction which resulted in Ti--C bonds was observed at the interface. The Ti film growth followed a pronounced three-dimensional growth mode on as-prepared surfaces whereas the ion bombardment resulted in a change toward a more two-dimensional growth mode. The difference in adhesion behavior for the two types of HDPE substrates was found to be due to a difference in the amounts of low molecular weight products present within the substrates

Molecular dynamics studies of the ion beam induced crystallization in silicon

International Nuclear Information System (INIS)

Marques, L.A.; Caturla, M.J.; Huang, H.

1995-01-01

We have studied the ion bombardment induced amorphous-to-crystal transition in silicon using molecular dynamics techniques. The growth of small crystal seeds embedded in the amorphous phase has been monitored for several temperatures in order to get information on the effect of the thermal temperature increase introduced by the incoming ion. The role of ion-induced defects on the growth has been also studied

Improvements in or relating to charge coupled devices

International Nuclear Information System (INIS)

Shannon, J.M.

1980-01-01

This invention relates to charge coupled devices for converting an electromagnetic radiation pattern in a certain wavelength range, particularly but not exclusively an infrared radiation pattern, into electrical signals. A semiconductor layer within this device can be of n-type silicon with a deep level impurity concentration present as proton bombardment induced defects in the crystal lattice or as an ion implanted concentration. (UK)

Study of proton and 2 protons emission from light neutron deficient nuclei around A=20

International Nuclear Information System (INIS)

Zerguerras, T.

2001-09-01

Proton and two proton emission from light neutron deficient nuclei around A=20 have been studied. A radioactive beam of 18 Ne, 17 F and 20 Mg, produced at the Grand Accelerateur National d'Ions Lourds by fragmentation of a 24 Mg primary beam at 95 MeV/A, bombarded a 9 Be target to form unbound states. Proton(s) and nuclei from the decay were detected respectively in the MUST array and the SPEG spectrometer. From energy and angle measurements, the invariant mass of the decaying nucleus could be reconstructed. Double coincidence events between a proton and 17 F, 16 O, 15 O, 14 O and 18 Ne were registered to obtain excitation energy spectra of 18 Ne, 17 F, 16 F, 15 F et 19 Na. Generally, the masses measures are in agreement with previous experiments. In the case of 18 Ne, excitation energy and angular distributions agree well with the predictions of a break up model calculation. From 17 Ne proton coincidences, a first experimental measurement of the ground state mass excess of 18 Na has been obtained and yields 24,19(0,15)MeV. Two proton emission from 17 Ne and 18 Ne excited states and the 19 Mg ground state was studied through triple coincidences between two proton and 15 O, 16 O and 17 Ne respectively. In the first case, the proton-proton relative angle distribution in the center of mass has been compared with model calculation. Sequential emission from excited states of 17 Ne, above the proton emission threshold, through 16 F is dominant but a 2 He decay channel could not be excluded. No 2 He emission from the 1.288 MeV 17 Ne state, or from the 6.15 MeV 18 Ne state has been observed. Only one coincidence event between 17 Ne and two proton was registered, the value of the one neutron stripping reaction cross section of 20 Mg being much lower than predicted. (author)

Annealing of defects in indium antimonide after ion bombardment

International Nuclear Information System (INIS)

Bogatyrev, V.A.; Kachurin, G.A.

1977-01-01

Indium antimonide electric properties are investigated after ion bombardment of different mass (with energy of 60 and 300 keV) and isochrone annealing in the 20-450 deg C temperature range. It is shown that 100-150 deg C n- type stable layers are formed after proton irradiation at room temperature only. Indium antimonide exposure by average mass ions under the same conditions and also by helium ions of 300 keV energy brings to p-type layer formation with high hole concentration. Subsequent heating at the temperature over 150 deg C results in electron conductivity of irradiated layers. Electron volume density and mobility efficiency reaches 10 18 cm -3 and 10 4 cm 2 /Vs respectively. N-type formed layers are stable up to 350 deg C allowing its usage for n-p transition formation admitting thermal treatment. Analysis is given of defect behaviour peculiarities depending upon the irradiation and annealing conditions. Hole conductivity in irradiated indium antimonide is supposed to be stipulated by regions of disorder, while electron conductivity - by relatively simpler disorders

COMMISSIONING CNI PROTON POLARIMETERS IN RHIC

International Nuclear Information System (INIS)

HUANG, H.; BRAVAR, A.; LI, Z.; MACKAY, W.W.; MAKDISI, Y.; RESCIA, S.; ROSER, T.; SURROW, B.; BUNCE, G.; DESHPANDE, A.; GOTO, Y.; ET AL

2002-01-01

Two polarimeters based on proton carbon elastic scattering in the Coulomb Nuclear Interference (CNI) region have been installed and commissioned in the Blue and Yellow rings of RHIC during the first RHIC polarized proton collider run. Each polarimeter consists of ultra-thin carbon targets and six silicon detectors. With newly developed wave form digitizers, they provide fast and reliable polarization information for both rings

Advances in fast-atom-bombardment mass spectroscopy

International Nuclear Information System (INIS)

Hemling, M.E.

1986-01-01

A comparison of fast atom bombardment and field desorption mass spectrometry was made to determine relative sensitivity and applicability. A series of glycosphingolipids and a series of protected oligonucleotides of known structure were analyzed to ascertain the potential utility of fast atom bombardment mass spectrometry in the structural elucidation of novel compounds in these classes. Negative ion mass markers were also developed. Fast atom bombardment was found to be one-to-two orders of magnitude more sensitive than field desorption based on the analysis of a limited number of compounds from several classes. Superior sensitivity was not universal and field desorption was clearly better in certain cases. In the negative ion mode in particular, fast atom bombardment was found to be a useful tool for the determination of the primary structure of glycosphingolipids and oligonucleotides. Carbohydrate sequence and branching information, and a fatty acid and lipid base composition were readily obtained from the mass spectra of glycosphingolipids while bidirectional nucleotide sequence, nucleotide base, and protecting group assignments were obtained for oligonucleotides. Based on this knowledge, a tentative structure of a human peripheral nervous system glycosphingolipid implicated in certain cases of disorders such as amyotrophic lateral sclerosis, Lou Gehrig's Disease, was proposed. Suitable negative ion mass markers were found in dispersions of poly(ethylene) and poly(propylene)glycols in a triethylenetetramine matrix, a matrix which also proved useful in the analysis of glycosphingolipids. These polyglycol dispersions provided ions for calibration to 2300 daltons

Experimental and theoretical studies of bombardment induced surface morphology changes

International Nuclear Information System (INIS)

Carter, G.; Nobes, M.J.; Williams, J.S.

1980-01-01

In this review results of experimental and theoretical studies of solid surface morphology changes due to ion bombardment are discussed. An attempt is undertaken to classify the observed specific features of a structure, generated by ion bombardment [ru

Direct and Recoil-Induced Electron Emission from Ion-Bombarded Solids

DEFF Research Database (Denmark)

Holmen, G.; Svensson, B.; Schou, Jørgen

1979-01-01

The kinetic emission of secondary electrons from ion-bombarded solid surfaces is split into two contributions, a direct one caused by ionizing collisions between the bombarding ion and target atoms, and an indirect one originating from ionizing collisions undergone by recoil atoms with other target...... atoms. The direct contribution, which has been treated by several authors in previous studies, shows a behavior that is determined primarily by the electronic stopping power of the bombarding ion, while the indirect contribution is nonproportionally related to the nuclear stopping power. This latter...

Microscopic description of isobaric-analog-state transitions induced by 25-, 35-, and 45-MeV protons

International Nuclear Information System (INIS)

Doering, R.R.; Patterson, D.M.; Galonsky, A.

1975-01-01

Differential cross sections have been measured for (p, n) reactions to the isobaric analogs of the targets 48 Ca, 90 Zr, 120 Sn, and 208 Pb at proton bombarding energies of 25, 35, and 45 MeV. The isospin-flip strength of a phenomenological nucleon-nucleon force has been determined with microscopic distorted-wave calculations including the ''knockon'' exchange amplitude. A realistic G-matrix effective interaction also provides a reasonable account of the observed cross sections, particularly at the higher proton energies

Fast atom bombardment tandem mass spectrometry of carotenoids

Energy Technology Data Exchange (ETDEWEB)

van Breeman, R.B. [Univ. of Illinois, Chicago, IL (United States); Schmitz, H.H.; Schwartz, S.J. [North Carolina State Univ., Raleigh, NC (United States)

1995-02-01

Positive ion fast atom bombardment (FAB) tandem mass spectrometry (MS-MS) using a double-focusing mass spectrometer with linked scanning at constant B/E and high-energy collisionally activated dissociation (CAD) was used to differentiate 17 different cartenoids, including {beta}-apo-8{prime}- carotenal, astaxanthin, {alpha}-carotene, {beta}-carotene, {gamma}-carotene, {zeta}-carotene, canthaxanthin, {beta}-cryptoxanthin, isozeaxanthin bis (pelargonate), neoxanthin, neurosporene, nonaprene, lutein, lycopene, phytoene, phytofluene, and zeaxanthin. The carotenoids were either synthetic or isolated from plant tissues. The use of FAB ionization minimized degradation or rearrangement of the carotenoid structures due to the inherent thermal instability generally ascribed to these compounds. Instead of protonated molecules, both polar xanthophylls and nonpolar carotenes formed molecular ions, M{sup {center_dot}+}, during FAB ionization. Following collisionally activated dissociation, fragment ions of selected molecular ion precursors showed structural features indicative of the presence of hydroxyl groups, ring systems, ester groups, and aldehyde groups and the extent of aliphatic polyene conjugation. The fragmentation patterns observed in the mass spectra herein may be used as a reference for the structural determination of carotenoids isolated from plant and animal tissues. 18 refs., 4 figs.

The fabrication of quantum wires in silicon utilising the characteristics of solid phase epitaxial regrowth of crystalline silicon

International Nuclear Information System (INIS)

Liu, A.C.Y.; McCallum, J.C.

1998-01-01

The process of solid phase epitaxy (SPE) in semiconductor materials is one which has been intensively researched due to possible applications in the semiconductor industry. SPE is a solid phase transformation, in which an amorphous layer can be recrystallized either through heating or a combination of heating and ion bombardment. The transformation is believed to occur exclusively at the interface between the amorphous and crystalline layers, with individual atoms from the amorphous phase being incorporated into the crystalline phase by some point defect mechanism. The process has been observed to follow an Arrhenius temperature dependence. A wafer silicon was subjected to a multi-energy silicon implant through a fine nickel grid to amorphise region to a depth of 5μm creating an array of amorphous wells. Metal impurity atoms were then implanted in this region at energy of 500 keV. Samples were examined using an optical microscope and the Alphastep profiler at RMIT. It was confirmed that burgeoning wells were about 2 μm wide and rose about 0.01 μm above the silicon substrate

Destruction of C60 films by boron ion bombardment

International Nuclear Information System (INIS)

Ren Zhongmin; Du Yuancheng; Ying Zhifeng; Xiong Xiaxing; Li Fuming

1995-01-01

C 60 films are bombarded by 100 keV boron ion beams at doses ranging from 3x10 14 to 1x10 16 /cm 2 . The bombarded films are analyzed using Fourier transform infrared spectroscopy (FTIR), Raman spectra and X-ray diffraction (XRD) measurements. Most C 60 soccer-balls in the implanted region in the films are found to be broken at a dose over 1x10 15 /cm 2 , while at a dose less than 6x10 14 /cm 2 a few C 60 molecules remain undestroyed and maintain some crystal structure. The results of the analyses suggest a complete disintegration of a C 60 molecule under B + bombardment. ((orig.))

Radiation resistance of amorphous silicon alloy solar cells

International Nuclear Information System (INIS)

Hanak, J.J.; Chen, E.; Myatt, A.; Woodyard, J.R.

1987-01-01

The radiation resistance of a-Si alloy solar cells when bombarded by high energy particles is reviewed. The results of investigations of high energy proton radiation resistance of a-Si alloy thin film photovoltaic cells are reported. Irradiations were carried out with 200 keV and 1.00 MeV protons with fluences ranging betweeen 1E11 and 1E15 cm-2. Defect generation and passivation mechanisms were studied using the AM1 conversion efficiency and isochronal anneals. It is concluded that the primary defect generation mechanism results from the knock-on of Si and Ge in the intrinsic layer of the cells. The defect passivation proceeds by the complex annealing of Si and Ge defects and not by the simple migration of hydrogen

Radiation damage in proton-irradiated epitaxial silicon detectors

Energy Technology Data Exchange (ETDEWEB)

Lange, Joern

2009-07-15

In this work radiation hardness of 75 {mu}m, 100 {mu}m and 150 {mu}m thick epitaxial silicon pad diodes of both standard and oxygenated material was investigated. Damage after 24 GeV/c proton irradiation in a 1MeV neutron equivalent fluence range between 10{sup 14} cm{sup -2} and 10{sup 16} cm{sup -2} was studied and isothermal annealing experiments at 80 C were carried out. Standard CV/IV measurements could be performed up to 4 x 10{sup 15} cm{sup -2}. The volume-normalised reverse current was found to increase linearly with fluence with a slope independent of the thickness and impurity concentration. However, due to large fluctuations the fluences had to be renormalised using the current-related damage parameter. Concerning the depletion voltage, nearly all materials remained at a moderate level up to 4 x 10{sup 15} cm{sup -2}. During short-term annealing acceptors annealed out, whereas others were introduced during the long-term annealing. The stable damage was characterised by donor removal at low fluences and fluence-proportional predominant donor introduction for highly irradiated diodes, depending on the oxygen level. No type inversion was observed. Time-resolved measurements with a new 670 nm laser-TCT setup made the determination of the trapping time constant with the charge correction method possible. The results agreed with expectations and showed a linear increase of trapping probability with fluence. The electric field exhibited a double peak structure in highly irradiated diodes. Charge collection efficiency measurements with {alpha}-particles were independent of oxygen concentration, but showed an improved efficiency for thinner diodes. A comparison to simulation revealed systematic discrepancies. A non-constant trapping time parameter was proposed as possible solution. (orig.)

Radiation damage in proton-irradiated epitaxial silicon detectors

International Nuclear Information System (INIS)

Lange, Joern

2009-07-01

In this work radiation hardness of 75 μm, 100 μm and 150 μm thick epitaxial silicon pad diodes of both standard and oxygenated material was investigated. Damage after 24 GeV/c proton irradiation in a 1MeV neutron equivalent fluence range between 10 14 cm -2 and 10 16 cm -2 was studied and isothermal annealing experiments at 80 C were carried out. Standard CV/IV measurements could be performed up to 4 x 10 15 cm -2 . The volume-normalised reverse current was found to increase linearly with fluence with a slope independent of the thickness and impurity concentration. However, due to large fluctuations the fluences had to be renormalised using the current-related damage parameter. Concerning the depletion voltage, nearly all materials remained at a moderate level up to 4 x 10 15 cm -2 . During short-term annealing acceptors annealed out, whereas others were introduced during the long-term annealing. The stable damage was characterised by donor removal at low fluences and fluence-proportional predominant donor introduction for highly irradiated diodes, depending on the oxygen level. No type inversion was observed. Time-resolved measurements with a new 670 nm laser-TCT setup made the determination of the trapping time constant with the charge correction method possible. The results agreed with expectations and showed a linear increase of trapping probability with fluence. The electric field exhibited a double peak structure in highly irradiated diodes. Charge collection efficiency measurements with α-particles were independent of oxygen concentration, but showed an improved efficiency for thinner diodes. A comparison to simulation revealed systematic discrepancies. A non-constant trapping time parameter was proposed as possible solution. (orig.)

Production of nuclear fragments from the interactions of 24 GeV/c protons in a gold target

CERN Document Server

Herz, A J; O'Sullivan, D; Thompson, A

1976-01-01

Lexan polycarbonate track detectors have been used to determine the charge and energy spectra of nuclear fragments with Z>or=6 and with kinetic energies as low as approximately=1.0 MeV/nucleon emitted from a thin gold target bombarded with 24 GeV/c protons. (8 refs).

Very low-energy and low-fluence ion beam bombardment of naked plasmid DNA

International Nuclear Information System (INIS)

Norarat, R.; Semsang, N.; Anuntalabhochai, S.; Yu, L.D.

2009-01-01

Ion beam bombardment of biological organisms has been recently applied to mutation breeding of both agricultural and horticultural plants. In order to explore relevant mechanisms, this study employed low-energy ion beams to bombard naked plasmid DNA. The study aimed at simulation of the final stage of the process of the ion beam bombardment of real cells to check whether and how very low-energy and low-fluence of ions can induce mutation. Argon and nitrogen ions at 5 keV and 2.5 keV respectively bombarded naked plasmid DNA pGFP to very low-fluences, an order of 10 13 ions/cm 2 . Subsequently, DNA states were analyzed using electrophoresis. Results provided evidences that the very low-energy and low-fluence ion bombardment indeed altered the DNA structure from supercoil to short linear fragments through multiple double strand breaks and thus induced mutation, which was confirmed by transfer of the bombarded DNA into bacteria Escherichia coli and subsequent expression of the marker gene.

Ultra-low-energy (<10 eV/u) ion beam bombardment effect on naked DNA

Energy Technology Data Exchange (ETDEWEB)

Thopan, P. [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Thongkumkoon, P. [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Department of Biology, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Prakrajang, K. [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Faculty of Science, Maejo University, Chiang Mai 50290 (Thailand); Suwannakachorn, D. [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Yu, L.D., E-mail: yuld@thep-center.org [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Thailand Center of Excellence in Physics, Commission on Higher Education, 328 Si Ayutthaya Road, Bangkok 10400 (Thailand)

2014-05-01

Highlights: • Decelerated ultra-low energy ion beam bombarded naked DNA. • DNA form change induced by ion bombardment was investigated. • N-ion bombardment at 32 eV induced DNA single and double strand breaks. • Ar-ion bombardment at a-few-hundreds eV induced DNA single strand break. - Abstract: Since ion energy deposition in the ion-bombarded materials dominantly occurs in the low-energy range, it is very interesting to know effects from ultra-low-energy ion interaction with DNA for understanding ion-beam-induced genetic mutation. Tens-keV Ar- and N-ion beams were decelerated to ultra-low energy ranging from 20 to 100 eV, or only a few to 10 eV/u, to bombard naked plasmid DNA. The bombarded DNA was analyzed using gel electrophoresis for DNA form changes. The original DNA supercoiled form was found to change to relaxed and linear forms, indicating single or double strand breaks after bombarded by tens-eV ion beam. N-ion beam was found more effective in inducing DNA change and mutation than Ar-ion beam. The study demonstrated that the ion bombardment with energy as low as several-tens eV was able to break DNA strands and thus potentially to cause genetic modification of biological cells. The experimental results were discussed in terms of direct atomic collision between the ions and DNA atoms.

Ultra-low-energy (<10 eV/u) ion beam bombardment effect on naked DNA

International Nuclear Information System (INIS)

Thopan, P.; Thongkumkoon, P.; Prakrajang, K.; Suwannakachorn, D.; Yu, L.D.

2014-01-01

Highlights: • Decelerated ultra-low energy ion beam bombarded naked DNA. • DNA form change induced by ion bombardment was investigated. • N-ion bombardment at 32 eV induced DNA single and double strand breaks. • Ar-ion bombardment at a-few-hundreds eV induced DNA single strand break. - Abstract: Since ion energy deposition in the ion-bombarded materials dominantly occurs in the low-energy range, it is very interesting to know effects from ultra-low-energy ion interaction with DNA for understanding ion-beam-induced genetic mutation. Tens-keV Ar- and N-ion beams were decelerated to ultra-low energy ranging from 20 to 100 eV, or only a few to 10 eV/u, to bombard naked plasmid DNA. The bombarded DNA was analyzed using gel electrophoresis for DNA form changes. The original DNA supercoiled form was found to change to relaxed and linear forms, indicating single or double strand breaks after bombarded by tens-eV ion beam. N-ion beam was found more effective in inducing DNA change and mutation than Ar-ion beam. The study demonstrated that the ion bombardment with energy as low as several-tens eV was able to break DNA strands and thus potentially to cause genetic modification of biological cells. The experimental results were discussed in terms of direct atomic collision between the ions and DNA atoms

Measurement of neutron spectra through composed material block bombarded with D-T neutrons

Energy Technology Data Exchange (ETDEWEB)

Zhu, T.H. [Institute of Nuclear Physics and Chemistry, China Academy of Engineering Physics, P.O. BOX 919-213, Mian yang 621900 (China)], E-mail: zhutonghua@yahoo.com.cn; Liu, R.; Lu, X.X.; Jiang, L.; Wen, Z.W.; Wang, M.; Lin, J.F. [Institute of Nuclear Physics and Chemistry, China Academy of Engineering Physics, P.O. BOX 919-213, Mian yang 621900 (China)

2009-12-15

A 2-dimensional composed material assembly made of the iron and hydric block has been established. The neutron spectra from the assembly bombarded with 14-MeV neutrons at neutron generator have been obtained using the proton recoil technique with a stillbene detector. The detector positions were selected at the 60 deg., 120 deg., 180 deg. on the surface of the iron spherical shell. The background neutron spectra consisted of background and room return radiation were subtracted with combination of methods of experimental shielding and MCNP calculation. The uncertainty of results was 6.3-7.4%. The experiment results were analyzed and simulated by MCNP code and two data library. The difference is integral neutron flux (background neutron subtracted) of measured results greater than calculations with maximum of 21.2% in the range of 1-16 MeV.

Secondary ion yield changes in Si and GaAs due to topography changes during O+2 or Cs+ ion bombardment

International Nuclear Information System (INIS)

Stevie, F.A.; Kahora, P.M.; Simons, D.S.; Chi, P.

1988-01-01

Changes in secondary ion yields of matrix and dopant species have been correlated with changes in surface topography during O + 2 bombardment of Si and GaAs. In Si, profiles were measured in (100) wafers at 6- and 8-keV impact energy. At 6 keV, a yield increase of about 70% occurred for Si + over a depth range of 2.5 to 3.5 μm, with changes in other species ranging from a decrease of ∼20% for Si + 3 to an increase of more than 25% for O + . The development of a rippled surface topography was observed in scanning electron micrographs over the same depth range. Similar effects occurred over a 3--5 μm depth range for 8-keV ions, and in (111) silicon at a depth of 3 to 4 μm for 6-keV ions. No differences were noted between p- and n-type silicon, or implanted and unimplanted silicon. In GaAs, profiles were measured in (100) wafers at 2.5-, 5.5-, and 8-keV impact energies. At 8 keV, a yield increase of about 70% was found for GaO + in the range 0.6--1.0 μm, with smaller changes for other matrix species. At 5.5 keV, similar effects were observed, but over a depth interval of 0.3 to 0.7 μm. No yield changes were detected at 2.5-keV impact energy. The yield changes at the higher energies were again correlated with the onset of changes in topography. No change in ion yield or surface topography was noted for Cs + bombardment of Si or GaAs. The topography and ion yield changes are affected by the angle of incidence and, for Si, the oxygen coverage. The results show that the practice of normalizing secondary ion mass spectrometry dopant profiles to a matrix signal must be modified for situations where matrix yield changes occur

Proton induced single event upset cross section prediction for 0.15 μm six-transistor (6T) silicon-on-insulator static random access memories

International Nuclear Information System (INIS)

Li Lei; Zhou Wanting; Liu Huihua

2012-01-01

In this paper, an efficient physics-based method to estimate the saturated proton upset cross section for six-transistor (6T) silicon-on-insulator (SOI) static random access memory (SRAM) cells using layout and technology parameters is proposed. This method calculates the effects of radiation based on device physics. The simple method handles the problem with ease by SPICE simulations, which can be divided into two stages. At first, it uses a standard SPICE program to predict the cross section for recoiling heavy ions with linear energy transfer (LET) of 14 MeV-cm 2 /mg. Then, the predicted cross section for recoiling heavy ions with LET of 14 MeV-cm 2 /mg is used to estimate the saturated proton upset cross section for 6T SOI SRAM cells with a simple model. The calculated proton induced upset cross section based on this method is in good agreement with the test results of 6T SOI SRAM cells processed using 0.15 μm technology. (author)

Investigation of the double exponential in the current-voltage characteristics of silicon solar cells. [proton irradiation effects on ATS 1 cells

Science.gov (United States)

Wolf, M.; Noel, G. T.; Stirn, R. J.

1977-01-01

Difficulties in relating observed current-voltage characteristics of individual silicon solar cells to their physical and material parameters were underscored by the unexpected large changes in the current-voltage characteristics telemetered back from solar cells on the ATS-1 spacecraft during their first year in synchronous orbit. Depletion region recombination was studied in cells exhibiting a clear double-exponential dark characteristic by subjecting the cells to proton irradiation. A significant change in the saturation current, an effect included in the Sah, Noyce, Shockley formulation of diode current resulting from recombination in the depletion region, was caused by the introduction of shallow levels in the depletion region by the proton irradiation. This saturation current is not attributable only to diffusion current from outside the depletion region and only its temperature dependence can clarify its origin. The current associated with the introduction of deep-lying levels did not change significantly in these experiments.

Characterization techniques for ion bombarded insulators

International Nuclear Information System (INIS)

Borders, J.A.

1987-01-01

The chapter gives a comprehensive review of the experimental methods for the analysis of ion-bombarded insulators including optical and structural methods, resonance, energetic ion methods, and surface techniques. 48 refs.; 34 figs

Ion bombardment modification of surfaces

International Nuclear Information System (INIS)

Auciello, O.

1984-01-01

Ion bombardment-induced modification of surfaces may be considered one of the significant scientific and technological developments of the last two decades. The understanding acquired concerning the underlying mechanisms of several phenomena occurring during ion-surface interactions has led to applications within different modern technologies. These include microelectronics, surface acoustical and optical technologies, solar energy conversion, thin film technology, ion implantation metallurgy, nuclear track technology, thermonuclear fusion, vacuum technology, cold welding technology, biomedicine (implantology). It has become clear that information on many relevant advances, regarding ion bombardment modification of surfaces is dispersed among journals involving fields sometimes not clearly related. This may result, in some cases, in a loss of the type of interdisciplinary exchange of ideas, which has proved to be so fruitful for the advancement of science and technology. This book has been planned in an attempt to collect at least some of today's relevant information about the experimental and theoretical knowledge related to surface modification and its application to technology. (Auth.)

Induction of antioxidant enzyme activity and lipid peroxidation level in ion-beam-bombarded rice seeds

Energy Technology Data Exchange (ETDEWEB)

Semsang, Nuananong, E-mail: nsemsang@gmail.com [Molecular Biology Laboratory, Department of Biology, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Yu, LiangDeng [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Thailand Center of Excellence in Physics, Commission on Higher Education, 328 Si Ayutthaya Road, Bangkok 10400 (Thailand)

2013-07-15

Highlights: ► Ion beam bombarded rice seeds in vacuum. ► Studied seed survival from the ion bombardment. ► Determined various antioxidant enzyme activities and lipid peroxidation level. ► Discussed vacuum, ion species and ion energy effects. ► Attributed the changes to free radical formation due to ion bombardment. -- Abstract: Low-energy ion beam bombardment has been used to mutate a wide variety of plant species. To explore the indirect effects of low-energy ion beam on biological damage due to the free radical production in plant cells, the increase in antioxidant enzyme activities and lipid peroxidation level was investigated in ion-bombarded rice seeds. Local rice seeds were bombarded with nitrogen or argon ion beams at energies of 29–60 keV and ion fluences of 1 × 10{sup 16} ions cm{sup −2}. The activities of the antioxidant enzymes; superoxide dismutase (SOD), catalase (CAT), ascorbate peroxidase (APX), dehydroascorbate reductase (DHAR), glutathione reductase (GR), glutathione S-transferase (GST) and lipid peroxidation level were assayed in the germinated rice seeds after ion bombardment. The results showed most of the enzyme activities and lipid peroxidation levels in both the argon and nitrogen bombarded samples were higher than those in the natural control. N-ion bombardment could induce higher levels of antioxidant enzyme activities in the rice samples than the Ar-ion bombardment. Additional effects due to the vacuum condition were found to affect activities of some antioxidant enzymes and lipid peroxidation level. This study demonstrates that ion beam bombardment and vacuum condition could induce the antioxidant enzyme activity and lipid peroxidation level which might be due to free radical production in the bombarded rice seeds.

Topography of InP surface bombarded by O2+ ion beam

International Nuclear Information System (INIS)

Sun Zhaoqi

1997-01-01

The topography of InP surface bombarded by O 2 + ion beam was investigated. Rippled topographies were observed for bombarded samples, and the data show that the ripple formation starts from a sputtering depth of about 0.4 μm. The wavelength and the disorder of the ripples both increase as the sputtering depth increases. The wavelength of the ripples appears to be sputtering depth dependent rather than sputtering rate dependent. It is confirmed that the ion-beam-induced surface rippling can be effectively suppressed by sample rotation during bombardment

Atomic Number Dependence of Hadron Production at Large Transverse Momentum in 300 GeV Proton--Nucleus Collisions

Science.gov (United States)

Cronin, J. W.; Frisch, H. J.; Shochet, M. J.; Boymond, J. P.; Mermod, R.; Piroue, P. A.; Sumner, R. L.

1974-07-15

In an experiment at the Fermi National Accelerator Laboratory we have compared the production of large transverse momentum hadrons from targets of W, Ti, and Be bombarded by 300 GeV protons. The hadron yields were measured at 90 degrees in the proton-nucleon c.m. system with a magnetic spectrometer equipped with 2 Cerenkov counters and a hadron calorimeter. The production cross-sections have a dependence on the atomic number A that grows with P{sub 1}, eventually leveling off proportional to A{sup 1.1}.

Proton tagging with the one arm AFP detector

CERN Document Server

The ATLAS collaboration

2017-01-01

The ATLAS Forward Proton (AFP) detector is designed to identify events in which one or two protons emerge intact from the LHC collisions at small angles. Such processes are usually associated with diffractive scattering. The first arm of the detector, consisting of tracking planes of 3D silicon sensors, was installed in February 2016. This note presents detector level distributions of events with a tagged proton with the AFP tracker and jets in the central detector in the final state.

Molecular projectile effects for kinetic electron emission from carbon- and metal-surfaces bombarded by slow hydrogen ions

International Nuclear Information System (INIS)

Cernusca, S.; Winter, H.P.; Aumayr, F.; Diez Muino, R.; Juaristi, J.I.

2003-01-01

Total yields for kinetic electron emission (KE) have been determined for impact of hydrogen monomer-, dimer- and trimer-ions (impact energy <10 keV) on atomically clean surfaces of carbon-fiber inforced graphite used as first-wall armour in magnetic fusion devices. The data are compared with KE yields for impact of same projectile ions on atomically clean highly oriented pyrolytic graphite and polycrystalline gold. We discuss KE yields for the different targets if bombarded by equally fast molecular and atomic ions in view to 'projectile molecular effects' (different yields per proton for equally fast atomic and molecular ions), which are expected from calculated electronic projectile energy losses in these target materials

Molecular projectile effects for kinetic electron emission from carbon- and metal-surfaces bombarded by slow hydrogen ions

CERN Document Server

Cernusca, S; Aumayr, F; Diez-Muino, R; Juaristi, J I

2003-01-01

Total yields for kinetic electron emission (KE) have been determined for impact of hydrogen monomer-, dimer- and trimer-ions (impact energy <10 keV) on atomically clean surfaces of carbon-fiber inforced graphite used as first-wall armour in magnetic fusion devices. The data are compared with KE yields for impact of same projectile ions on atomically clean highly oriented pyrolytic graphite and polycrystalline gold. We discuss KE yields for the different targets if bombarded by equally fast molecular and atomic ions in view to 'projectile molecular effects' (different yields per proton for equally fast atomic and molecular ions), which are expected from calculated electronic projectile energy losses in these target materials.

Recoil-proton fast-neutron counter telescope

Energy Technology Data Exchange (ETDEWEB)

Pavan, P.; Toniolo, D.; Zago, G.; Zannoni, R. (Padua Univ. (Italy). Ist. di Fisica); Galeazzi, G.; Bressanini, G.

1981-12-01

A recoil-proton neutron counter telescope is described composed of a solid-state silicon transmission detector and a NE 102 A plastic scintillator, measuring the energy loss, the energy of the recoil protons and the time of flight between the two detectors. The counter exposed to monoenergetic neutron beams of energy from 6 to 20 MeV presents a low background and a moderate energy resolution. Its absolute efficiency is calculated up to 50 MeV.

Recoil-proton fast-neutron-counter telescope

Energy Technology Data Exchange (ETDEWEB)

Galeazzi, G.; Pavan, P.; Toniolo, D.; Zago, G.; Zannoni, R.; Bressanini, G.

1981-01-01

A proton-recoil neutron counter telescope is described composed of a solid state silicon transmission detector and a NE 102 A plastic scintillator, measuring the energy loss, the energy of the recoil protons and the time-of-flight between the two detectors. The counter exposed to monoenergetic neutron beams of energy from 6 to 20 MeV, presents a low background and a moderate energy resolution. Its absolute efficiency is calculated up to 50 MeV.

Anomalous microstructural changes in III-nitrides under ion bombardment

International Nuclear Information System (INIS)

Kucheyev, S.O.; Williams, J.S.; Jagadish, C.

2002-01-01

Full text: Group-III nitrides (GaN, AlGaN, and InGaN) are currently a 'hot topic' in the physics and material research community due to very important technological applications of these materials in (opto)electronics. In the fabrication of III-nitride-based devices, ion bombardment represents a very attractive processing tool. However, ion-beam-produced lattice disorder and its undesirable consequences limit technological applications of ion implantation. Hence, studies of ion-beam-damage processes in Ill-nitrides are not only physically interesting but also technologically important. In this study, wurtzite GaN, AlGaN, and InGaN films exposed to ion bombardment under a wide range of irradiation conditions are studied by a combination of transmission electron microscopy (TEM), environmental scanning electron microscopy (ESEM), energy dispersive x-ray spectrometry (EDS), atomic force microscopy (AFM), cathodoluminescence (CL), and Rutherford backscattering/channeling (RBS/C) spectrometry. Results show that, unlike the situation for mature semiconductors such as Si and GaAs, Ill-nitrides exhibit a range of intriguing behavior involving extreme microstructural changes under ion bombardment. In this presentation, the following aspects are discussed: (i) formation of lattice defects during ion bombardment, (ii) ion-beam-induced phase transformations, (iii) ion-beam-produced stoichiometric imbalance and associated material decomposition, and (iv) an application of charging phenomena during ESEM imaging for studies of electrical isolation in GaN by MeV light ion irradiation. Emphasis is given to the (powerful) application of electron microscopy techniques for the understanding of physical processes occurring in Ill-nitrides under ion bombardment. Copyright (2002) Australian Society for Electron Microscopy Inc

InN: Fermi level stabilization by low-energy ion bombardment

International Nuclear Information System (INIS)

Piper, L.F.J.; Veal, T.D.; McConville, C.F.; Lu, H.; Schaff, W.J.

2006-01-01

The near-surface electronic properties of InN have been investigated with high-resolution electron-energy loss spectroscopy. Low-energy (∝400 eV) nitrogen ion bombardment followed by low temperature annealing (<300 C) was found to dramatically increase the n-type conductivity of InN, close to the surface. This is explained in terms of the formation of amphoteric defects from the ion bombardment and annealing combined with the band structure of InN. Low-energy ion bombardment and annealing is shown to result in a damage-induced, donor-like defect-profile instead of the expected electron accumulation for InN. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

A NEW RELATIVE PROTON POLARIMETER FOR RHIC

International Nuclear Information System (INIS)

HUANG, H.; ALEKSEEV, I.; BUNCE, G.; BRUNER, N.; DESHPANDE, A.; GOTO, Y.; FIELDS, D.; IMAI, K.

2001-01-01

An innovative polarimeter based on proton carbon elastic scattering in the Coulomb Nuclear Interference (CNI) region has been installed and commissioned in the Blue ring of RHIC during the first RHIC polarized proton commissioning in September, 2000. The polarimeter consists of ultra-thin carbon targets and four silicon detectors. All elements are in a 1.6 meter vacuum chamber. This paper summarizes the polarimeter design issues and recent commissioning results

Characterization of 150μm thick epitaxial silicon detectors from different producers after proton irradiation

International Nuclear Information System (INIS)

Hoedlmoser, H.; Moll, M.; Haerkoenen, J.; Kronberger, M.; Trummer, J.; Rodeghiero, P.

2007-01-01

Epitaxial (EPI) silicon has recently been investigated for the development of radiation tolerant detectors for future high-luminosity HEP experiments. A study of 150μm thick EPI silicon diodes irradiated with 24GeV/c protons up to a fluence of 3x10 15 p/cm 2 has been performed by means of Charge Collection Efficiency (CCE) measurements, investigations with the Transient Current Technique (TCT) and standard CV/IV characterizations. The aim of the work was to investigate the impact of radiation damage as well as the influence of the wafer processing on the material performance by comparing diodes from different manufacturers. The changes of CCE, full depletion voltage and leakage current as a function of fluence are reported. While the generation of leakage current due to irradiation is similar in all investigated series of detectors, a difference in the effective doping concentration can be observed after irradiation. In the CCE measurements an anomalous drop in performance was found even for diodes exposed to very low fluences (5x10 13 p/cm 2 ) in all measured series. This result was confirmed for one series of diodes in TCT measurements with an infrared laser. TCT measurements with a red laser showed no type inversion up to fluences of 3x10 15 p/cm 2 for n-type devices whereas p-type diodes undergo type inversion from p- to n-type for fluences higher than ∼2x10 14 p/cm 2

Signal development in irradiated silicon detectors

CERN Document Server

Kramberger, Gregor; Mikuz, Marko

2001-01-01

This work provides a detailed study of signal formation in silicon detectors, with the emphasis on detectors with high concentration of irradiation induced defects in the lattice. These defects give rise to deep energy levels in the band gap. As a consequence, the current induced by charge motion in silicon detectors is signifcantly altered. Within the framework of the study a new experimental method, Charge correction method, based on transient current technique (TCT) was proposed for determination of effective electron and hole trapping times in irradiated silicon detectors. Effective carrier trapping times were determined in numerous silicon pad detectors irradiated with neutrons, pions and protons. Studied detectors were fabricated on oxygenated and non-oxygenated silicon wafers with different bulk resistivities. Measured effective carrier trapping times were found to be inversely proportional to fuence and increase with temperature. No dependence on silicon resistivity and oxygen concentration was observ...

Self-Healing, High-Permittivity Silicone Dielectric Elastomer

DEFF Research Database (Denmark)

Madsen, Frederikke Bahrt; Yu, Liyun; Skov, Anne Ladegaard

2016-01-01

possesses high dielectric permittivity and consists of an interpenetrating polymer network of silicone elastomer and ionic silicone species that are cross-linked through proton exchange between amines and acids. The ionically cross-linked silicone provides self-healing properties after electrical breakdown...... or cuts made directly to the material due to the reassembly of the ionic bonds that are broken during damage. The dielectric elastomers presented in this paper pave the way to increased lifetimes and the ability of dielectric elastomers to survive millions of cycles in high-voltage conditions....

Study of proton and 2 protons emission from light neutron deficient nuclei around A=20; Etude de l'emission proton et de deux protons dans les noyaux legers deficients en neutrons de la region A=20

Energy Technology Data Exchange (ETDEWEB)

Zerguerras, T

2001-09-01

Proton and two proton emission from light neutron deficient nuclei around A=20 have been studied. A radioactive beam of {sup 18}Ne, {sup 17}F and {sup 20}Mg, produced at the Grand Accelerateur National d'Ions Lourds by fragmentation of a {sup 24}Mg primary beam at 95 MeV/A, bombarded a {sup 9}Be target to form unbound states. Proton(s) and nuclei from the decay were detected respectively in the MUST array and the SPEG spectrometer. From energy and angle measurements, the invariant mass of the decaying nucleus could be reconstructed. Double coincidence events between a proton and {sup 17}F, {sup 16}O, {sup 15}O, {sup 14}O and {sup 18}Ne were registered to obtain excitation energy spectra of {sup 18}Ne, {sup 17}F, {sup 16}F, {sup 15}F et {sup 19}Na. Generally, the masses measures are in agreement with previous experiments. In the case of {sup 18}Ne, excitation energy and angular distributions agree well with the predictions of a break up model calculation. From {sup 17}Ne proton coincidences, a first experimental measurement of the ground state mass excess of {sup 18}Na has been obtained and yields 24,19(0,15)MeV. Two proton emission from {sup 17}Ne and {sup 18}Ne excited states and the {sup 19}Mg ground state was studied through triple coincidences between two proton and {sup 15}O, {sup 16}O and {sup 17}Ne respectively. In the first case, the proton-proton relative angle distribution in the center of mass has been compared with model calculation. Sequential emission from excited states of {sup 17}Ne, above the proton emission threshold, through {sup 16}F is dominant but a {sup 2}He decay channel could not be excluded. No {sup 2}He emission from the 1.288 MeV {sup 17}Ne state, or from the 6.15 MeV {sup 18}Ne state has been observed. Only one coincidence event between {sup 17}Ne and two proton was registered, the value of the one neutron stripping reaction cross section of {sup 20}Mg being much lower than predicted. (author)

MUST: A silicon strip detector array for radioactive beam experiments

CERN Document Server

Blumenfeld, Y; Sauvestre, J E; Maréchal, F; Ottini, S; Alamanos, N; Barbier, A; Beaumel, D; Bonnereau, B; Charlet, D; Clavelin, J F; Courtat, P; Delbourgo-Salvador, P; Douet, R; Engrand, M; Ethvignot, T; Gillibert, A; Khan, E; Lapoux, V; Lagoyannis, A; Lavergne, L; Lebon, S; Lelong, P; Lesage, A; Le Ven, V; Lhenry, I; Martin, J M; Musumarra, A; Pita, S; Petizon, L; Pollacco, E; Pouthas, J; Richard, A; Rougier, D; Santonocito, D; Scarpaci, J A; Sida, J L; Soulet, C; Stutzmann, J S; Suomijärvi, T; Szmigiel, M; Volkov, P; Voltolini, G

1999-01-01

A new and innovative array, MUST, based on silicon strip technology and dedicated to the study of reactions induced by radioactive beams on light particles is described. The detector consists of 8 silicon strip - Si(Li) telescopes used to identify recoiling light charged particles through time of flight, energy loss and energy measurements and to determine precisely their scattering angle through X, Y position measurements. Each 60x60 mm sup 2 double sided silicon strip detector with 60 vertical and 60 horizontal strips yields an X-Y position resolution of 1 mm, an energy resolution of 50 keV, a time resolution of around 1 ns and a 500 keV energy threshold for protons. The backing Si(Li) detectors stop protons up to 25 MeV with a resolution of approximately 50 keV. CsI crystals read out by photo-diodes which stop protons up to 70 MeV are added to the telescopes for applications where higher energy particles need to be detected. The dedicated electronics in VXIbus standard allow us to house the 968 logic and a...

Induction of antioxidant enzyme activity and lipid peroxidation level in ion-beam-bombarded rice seeds

Science.gov (United States)

Semsang, Nuananong; Yu, LiangDeng

2013-07-01

Low-energy ion beam bombardment has been used to mutate a wide variety of plant species. To explore the indirect effects of low-energy ion beam on biological damage due to the free radical production in plant cells, the increase in antioxidant enzyme activities and lipid peroxidation level was investigated in ion-bombarded rice seeds. Local rice seeds were bombarded with nitrogen or argon ion beams at energies of 29-60 keV and ion fluences of 1 × 1016 ions cm-2. The activities of the antioxidant enzymes; superoxide dismutase (SOD), catalase (CAT), ascorbate peroxidase (APX), dehydroascorbate reductase (DHAR), glutathione reductase (GR), glutathione S-transferase (GST) and lipid peroxidation level were assayed in the germinated rice seeds after ion bombardment. The results showed most of the enzyme activities and lipid peroxidation levels in both the argon and nitrogen bombarded samples were higher than those in the natural control. N-ion bombardment could induce higher levels of antioxidant enzyme activities in the rice samples than the Ar-ion bombardment. Additional effects due to the vacuum condition were found to affect activities of some antioxidant enzymes and lipid peroxidation level. This study demonstrates that ion beam bombardment and vacuum condition could induce the antioxidant enzyme activity and lipid peroxidation level which might be due to free radical production in the bombarded rice seeds.

Influence of the ion bombardment of O{sub 2} plasmas on low-k materials

Energy Technology Data Exchange (ETDEWEB)

Verdonck, Patrick, E-mail: verdonck@imec.be [IMEC, Kapeldreef 75, 3001 Leuven (Belgium); Samara, Vladimir [IMEC, Kapeldreef 75, 3001 Leuven (Belgium); Open University, Materials Engineering, Walton Hall, Milton Keynes MK7 6AA (United Kingdom); Goodyear, Alec [Open University, Materials Engineering, Walton Hall, Milton Keynes MK7 6AA (United Kingdom); Ferchichi, Abdelkarim; Van Besien, Els; Baklanov, Mikhail R. [IMEC, Kapeldreef 75, 3001 Leuven (Belgium); Braithwaite, Nicholas [Open University, Department of Physics and Astronomy, Walton Hall, Milton Keynes MK7 6AA (United Kingdom)

2011-10-31

In this study, special tests were devised in order to investigate the influence of ion bombardment on the damage induced in low-k dielectrics by oxygen plasmas. By placing a sample that suffered a lot of ion bombardment and one which suffered little ion bombardment simultaneously in the same plasma, it was possible to verify that ion bombardment in fact helped to protect the low-k film against oxygen plasma induced damage. Exhaustive analyses (ellipsometry, X-ray photoelectron spectroscopy, Fourier transform infrared spectroscopy, porosimetry, capacitance-voltage (C-V) measurements, water contact angle analysis) show that ion bombardment induced the formation of a denser top layer in the film, which then hampered further penetration of active oxygen species deeper into the bulk. This was further confirmed by other tests combining capacitively and inductively coupled plasmas. Therefore, it was possible to conclude that, at least for these plasmas, ion bombardment may help to reduce plasma induced damage to low-k materials.

Inelastic proton scattering at medium energy

International Nuclear Information System (INIS)

Love, W.G.

1980-01-01

Some of the most essential characteristics of the nucleon-nucleon interaction for probing nuclear structure at bombarding energies between 100 and 800 MeV are considered. With a local representation of the on-shell N-N t-matrix, data for a variety of specific transitions at IUCF and LAMPF energies are discussed with an emphasis on the nuclear structure information sampled by proton scattering. The importance of incorporating constraints on nuclear structure imposed by electron scattering is stressed. Some rather unique aspects of the (p,n) reaction at intermediate energies are discussed in terms of its energy dependence and nuclear structure sum rules. 11 figures

Magnetoresistance and ion bombardment induced magnetic patterning

International Nuclear Information System (INIS)

Hoeink, V.

2008-01-01

In this thesis the combination of the magnetic patterning of the unidirectional anisotropy and the tunnel magnetoresistance effect is investigated. In my diploma thesis, it has been shown that it is in principle possible to use the magnetic patterning by ion bombardment to magnetically structure the pinned layer in magnetic tunnel junctions (MTJs) with alumina barrier. Furthermore, it has been shown that the side effects which have been observed after this treatment can be at least reduced by an additional heating step. Starting from this point, the applicability of ion bombardment induced magnetic patterning (IBMP) in general and the combination of IBMP and MTJs in particular is investigated and new applications are developed. (orig.)

Signal height in silicon pixel detectors irradiated with pions and protons

International Nuclear Information System (INIS)

Rohe, T.; Acosta, J.; Bean, A.; Dambach, S.; Erdmann, W.; Langenegger, U.; Martin, C.; Meier, B.; Radicci, V.; Sibille, J.; Trueb, P.

2010-01-01

Pixel detectors are used in the innermost part of multi-purpose experiments at the Large Hadron Collider (LHC) and are therefore exposed to the highest fluences of ionising radiation, which in this part of the detectors consists mainly of charged pions. The radiation hardness of the detectors has been tested thoroughly up to the fluences expected at the LHC. In case of an LHC upgrade the fluence will be much higher and it is not yet clear up to which radii the present pixel technology can be used. To establish such a limit, pixel sensors of the size of one CMS pixel readout chip (PSI46V2.1) have been bump bonded and irradiated with positive pions up to 6x10 14 n eq /cm 2 at PSI and with protons up to 5x10 15 n eq /cm 2 . The sensors were taken from production wafers of the CMS barrel pixel detector. They use n-type DOFZ material with a resistance of about 3.7kΩcm and an n-side read out. As the performance of silicon sensors is limited by trapping, the response to a Sr-90 source was investigated. The highly energetic beta-particles represent a good approximation to minimum ionising particles. The bias dependence of the signal for a wide range of fluences will be presented.

Study of proton and 2 protons emission from light neutron deficient nuclei around A=20; Etude de l'emission proton et de deux protons dans les noyaux legers deficients en neutrons de la region A=20

Energy Technology Data Exchange (ETDEWEB)

Zerguerras, T

2001-09-01

Proton and two proton emission from light neutron deficient nuclei around A=20 have been studied. A radioactive beam of {sup 18}Ne, {sup 17}F and {sup 20}Mg, produced at the Grand Accelerateur National d'Ions Lourds by fragmentation of a {sup 24}Mg primary beam at 95 MeV/A, bombarded a {sup 9}Be target to form unbound states. Proton(s) and nuclei from the decay were detected respectively in the MUST array and the SPEG spectrometer. From energy and angle measurements, the invariant mass of the decaying nucleus could be reconstructed. Double coincidence events between a proton and {sup 17}F, {sup 16}O, {sup 15}O, {sup 14}O and {sup 18}Ne were registered to obtain excitation energy spectra of {sup 18}Ne, {sup 17}F, {sup 16}F, {sup 15}F et {sup 19}Na. Generally, the masses measures are in agreement with previous experiments. In the case of {sup 18}Ne, excitation energy and angular distributions agree well with the predictions of a break up model calculation. From {sup 17}Ne proton coincidences, a first experimental measurement of the ground state mass excess of {sup 18}Na has been obtained and yields 24,19(0,15)MeV. Two proton emission from {sup 17}Ne and {sup 18}Ne excited states and the {sup 19}Mg ground state was studied through triple coincidences between two proton and {sup 15}O, {sup 16}O and {sup 17}Ne respectively. In the first case, the proton-proton relative angle distribution in the center of mass has been compared with model calculation. Sequential emission from excited states of {sup 17}Ne, above the proton emission threshold, through {sup 16}F is dominant but a {sup 2}He decay channel could not be excluded. No {sup 2}He emission from the 1.288 MeV {sup 17}Ne state, or from the 6.15 MeV {sup 18}Ne state has been observed. Only one coincidence event between {sup 17}Ne and two proton was registered, the value of the one neutron stripping reaction cross section of {sup 20}Mg being much lower than predicted. (author)

A DLTS study of hydrogen doped czochralski-grown silicon

Energy Technology Data Exchange (ETDEWEB)

Jelinek, M. [Infineon Technologies Austria AG, 9500 Villach (Austria); Laven, J.G. [Infineon Technologies AG, 81726 Munich (Germany); Kirnstoetter, S. [Institute of Solid State Physics, Graz University of Technology, 8010 Graz (Austria); Schustereder, W. [Infineon Technologies Austria AG, 9500 Villach (Austria); Schulze, H.-J. [Infineon Technologies AG, 81726 Munich (Germany); Rommel, M. [Fraunhofer Institute of Integrated Systems and Devices IISB, 91058 Erlangen (Germany); Frey, L. [Fraunhofer Institute of Integrated Systems and Devices IISB, 91058 Erlangen (Germany); Chair of Electron Devices, FAU Erlangen-Nuremberg, 91058 Erlangen (Germany)

2015-12-15

In this study we examine proton implanted and subsequently annealed commercially available CZ wafers with the DLTS method. Depth-resolved spreading resistance measurements are shown, indicating an additional peak in the induced doping profile, not seen in the impurity-lean FZ reference samples. The additional peak lies about 10–15 μm deeper than the main peak near the projected range of the protons. A DLTS characterization in the depth of the additional peak indicates that it is most likely not caused by classical hydrogen-related donors known also from FZ silicon but by an additional donor complex whose formation is assisted by the presence of silicon self-interstitials.

Substrate bias effect on crystallinity of polycrystalline silicon thin films prepared by pulsed ion-beam evaporation method

Energy Technology Data Exchange (ETDEWEB)

Ali, Fazlat; Gunji, Michiharu; Yang, Sung-Chae; Suzuki, Tsuneo; Suematsu, Hisayuki; Jiang, Weihua; Yatsui, Kiyoshi [Nagaoka Univ. of Technology, Extreme Energy-Density Research Inst., Nagaoka, Niigata (Japan)

2002-06-01

The deposition of polycrystalline silicon thin films has been tried by a pulsed ion-beam evaporation method, where high crystallinity and deposition rate have been achieved without heating the substrate. The crystallinity and the deposition rate were improved by applying bias voltage to the substrate, where instantaneous substrate heating might have occurred by ion-bombardment. (author)

Substrate bias effect on crystallinity of polycrystalline silicon thin films prepared by pulsed ion-beam evaporation method

International Nuclear Information System (INIS)

Ali, Fazlat; Gunji, Michiharu; Yang, Sung-Chae; Suzuki, Tsuneo; Suematsu, Hisayuki; Jiang, Weihua; Yatsui, Kiyoshi

2002-01-01

The deposition of polycrystalline silicon thin films has been tried by a pulsed ion-beam evaporation method, where high crystallinity and deposition rate have been achieved without heating the substrate. The crystallinity and the deposition rate were improved by applying bias voltage to the substrate, where instantaneous substrate heating might have occurred by ion-bombardment. (author)

Contribution to the study of the diffusion {alpha}-proton for {alpha} particles of 3,1 and 5,3 MeV; Contribution a l'etude de la diffusion {alpha}-proton pour des particules {alpha} d'energie comprise entre 3,1 et 5,3 MeV

Energy Technology Data Exchange (ETDEWEB)

Ruhla, C [Commissariat a l' Energie Atomique, Saclay(France). Centre d' Etudes Nucleaires

1953-07-01

The diffusion of the particles has by the light cores that present a weak gate of potential, must permit the survey of the nuclear strengths. Some authors, studying the distribution in energy of the protons given out by a hydrogenated target submitted to a bombardment has variable energy, signal that this distribution has a structure of groups. We tried to reproduce experiences of diffusion {alpha}-proton, in order to verify the existence of the groups of signaled protons in the previous works. However in spite of finer experimental conditions, we had recovered any group structures in the distribution of the protons. This work permits to conclude that there is not a resonance in the {alpha}-proton diffusion for included energies between 3,1 and 5,3 MeV. The absence of resonances confirms the existence of the fundamental level of {sup 5}Li above in the neighborhood of 1,8 MeV {sup 4}He + {sup 1}H. (M.B.) [French] La diffusion des particules a par les noyaux legers qui presentent une faible barriere de potentiel, doit permettre l'etude des forces nucleaires. certains auteurs, etudiant la distribution en energie des protons emis par une cible hydrogenee soumise a un bombardement a d'energie variable, signalent que cette distribution a une structure de groupes. Nous avons essaye de reproduire les experiences du type diffusion {alpha}-proton, afin de verifier l'existence des groupes de protons signales dans les travaux anterieurs. Cependant malgre des conditions experimentales plus fines, nous n'avons retrouve aucunce structure de groupe dans la distribution des protons. Ce travail permet de conclure qu'il n'y a pas de resonance dans la diffusion {alpha}-proton pour des energies comprises entre 3,1 et 5,3 MeV. L'absence de resonances confirme l'existence du niveau fondamental de {sup 5}Li au voisinage de 1,8 MeV au-dessus de {sup 4}He + {sup 1}H. (M.B.)

Syntheses of deuterated leu-enkephalins and their use as internal standards for the quantification of leu-enkephalin by fast atom bombardment mass spectrometry

Energy Technology Data Exchange (ETDEWEB)

Benfenati, E. (Istituto di Ricerche Farmacologiche Mario Negri, Bergamo (Italy) Istituto di Ricerche Farmacologiche Mario Negri, Milan (Italy)); Icardi, G.; Chen, S. (Istituto di Ricerche Farmacologiche Mario Negri, Bergamo (Italy)); Fanelli, R. (Istituto di Ricerche Farmacologiche Mario Negri, Milan (Italy))

1990-04-01

We have developed a synthetic method for the preparation of di- and pentadeuterated leu-enkephalin (LE), Tyr-Gly-Gly-Phe-Leu, by proton-deuterium exchange using CF[sub 3]COOO[sup 2]H. Four to six deuterium atoms are introduced using a reaction temperature of 120[sup o]C and if 5% of [sup 2]H[sub 2]O is added the di-deuterated LE is obtained. These deuterated compounds are used as internal standards to plot calibration curves of LE using fast atom bombardment mass spectrometry. (author).

Planar silicon sensors for the CMS Tracker upgrade

CERN Document Server

Junkes, Alexandra

2013-01-01

The CMS tracker collaboration has initiated a large material investigation and irradiation campaign to identify the silicon material and design that fulfills all requirements for detectors for the high-luminosity phase of the Large Hadron Collider (HL-LHC).A variety of silicon p-in-n and n-in-p test-sensors made from Float Zone, Deep-Diffused FZ and Magnetic Czochralski materials were manufactured by one single industrial producer, thus guaranteeing similar conditions for the production and design of the test-structures. Properties of different silicon materials and design choices have been systematically studied and compared.The samples have been irradiated with 1 MeV neutrons and protons corresponding to maximal fluences as expected for the positions of detector layers in the future tracker. Irradiations with protons of different energies (23 MeV and 23 GeV) have been performed to evaluate the energy dependence of the defect generation in oxygen rich material. All materials have been characterized before an...

Data acquisition system for a proton imaging apparatus

CERN Document Server

Sipala, V; Bruzzi, M; Bucciolini, M; Candiano, G; Capineri, L; Cirrone, G A P; Civinini, C; Cuttone, G; Lo Presti, D; Marrazzo, L; Mazzaglia, E; Menichelli, D; Randazzo, N; Talamonti, C; Tesi, M; Valentini, S

2009-01-01

New developments in the proton-therapy field for cancer treatments, leaded Italian physics researchers to realize a proton imaging apparatus consisting of a silicon microstrip tracker to reconstruct the proton trajectories and a calorimeter to measure their residual energy. For clinical requirements, the detectors used and the data acquisition system should be able to sustain about 1 MHz proton rate. The tracker read-out, using an ASICs developed by the collaboration, acquires the signals detector and sends data in parallel to an FPGA. The YAG:Ce calorimeter generates also the global trigger. The data acquisition system and the results obtained in the calibration phase are presented and discussed.

Fertile transgenic wheat from microprojectile bombardment of scutellar tissue.

Science.gov (United States)

Becker, D; Brettschneider, R; Lörz, H

1994-02-01

A reproducible transformation system for hexaploid wheat was developed based on particle bombardment of scutellar tissue of immature embryos. Particle bombardment was carried out using a PDS 1000/He gun. Plant material was bombarded with the plasmid pDB1 containing the beta-glucuronidase gene (uidA) under the control of the actin-1 promoter of rice, and the selectable marker gene bar (phosphinothricin acetyltransferase) under the control of the CaMV 35S promoter. Selection was carried out using the herbicide Basta (Glufosinate-ammonium). From a total number of 1050 bombarded immature embryos, in seven independent transformation experiments, 59 plants could be regenerated. Putative transformants were screened for enzyme activity by the histochemical GUS assay using cut leaf material and by spraying the whole plants with an aqueous solution of the herbicide Basta. Twelve regenerants survived Basta spraying and showed GUS-activity. Southern-blot analysis indicated the presence of introduced foreign genes in the genomic DNA of the transformants and both marker genes were present in all plants analysed. To date, four plants have been grown to maturity and set seed. Histochemically stained pollen grains showed a 1:1 segregation of the uidA gene in all plants tested. A 3:1 segregation of the introduced genes was demonstrated by enzyme activity tests and Southern blot analysis of R1 plants.

Characterization of oxygen dimer-enriched silicon detectors

CERN Document Server

Boisvert, V; Moll, M; Murin, L I; Pintilie, I

2005-01-01

Various types of silicon material and silicon p+n diodes have been treated to increase the concentration of the oxygen dimer (O2i) defect. This was done by exposing the bulk material and the diodes to 6 MeV electrons at a temperature of about 350 °C. FTIR spectroscopy has been performed on the processed material confirming the formation of oxygen dimer defects in Czochralski silicon pieces. We also show results from TSC characterization on processed diodes. Finally, we investigated the influence of the dimer enrichment process on the depletion voltage of silicon diodes and performed 24 GeV/c proton irradiations to study the evolution of the macroscopic diode characteristics as a function of fluence.

Induction of anchorage-independent growth in primary human cells exposed to protons or HZE ions separately or in dual exposures.

Science.gov (United States)

Sutherland, B M; Cuomo, N C; Bennett, P V

2005-10-01

Travelers on space missions will be exposed to a complex radiation environment that includes protons and heavy charged particles. Since protons are present at much higher levels than are heavy ions, the most likely scenario for cellular radiation exposure will be proton exposure followed by a hit by a heavy ion. Although the effects of individual ion species on human cells are being investigated extensively, little is known about the effects of exposure to both radiation types. One useful measure of mammalian cell damage is induction of the ability to grow in a semi-solid agar medium highly inhibitory to the growth of normal human cells, termed neoplastic transformation. Using primary human cells, we evaluated induction of soft-agar growth and survival of cells exposed to protons only or to heavy charged particles (600 MeV/nucleon silicon) only as well as of cells exposed to protons followed after a 4-day interval by silicon ions. Both ions alone efficiently transformed the human cells to anchorage-independent growth. Initial experiments indicate that the dose responses for neoplastic transformation of cells exposed to protons and then after 4 days to silicon ions appear similar to that of cells exposed to silicon ions alone.

Evolution of atomic-scale surface structures during ion bombardment: A fractal simulation

International Nuclear Information System (INIS)

Shaheen, M.A.; Ruzic, D.N.

1993-01-01

Surfaces of interest in microelectronics have been shown to exhibit fractal topographies on the atomic scale. A model utilizing self-similar fractals to simulate surface roughness has been added to the ion bombardment code TRIM. The model has successfully predicted experimental sputtering yields of low energy (less then 1000 eV) Ar on Si and D on C using experimentally determined fractal dimensions. Under ion bombardment the fractal surface structures evolve as the atoms in the collision cascade are displaced or sputtered. These atoms have been tracked and the evolution of the surface in steps of one monolayer of flux has been determined. The Ar--Si system has been studied for incidence energies of 100 and 500 eV, and incidence angles of 0 degree, 30 degree, and 60 degree. As expected, normally incident ion bombardment tends to reduce the roughness of the surface, whereas large angle ion bombardment increases the degree of surface roughness. Of particular interest though, the surfaces are still locally self-similar fractals after ion bombardment and a steady state fractal dimension is reached, except at large angles of incidence

Neutronigen target study and realization for medical cyclotron using proton reactions on lithium deuteride

International Nuclear Information System (INIS)

Filhol, J.M.

1984-02-01

The new idea, used for this source realization, consists of replacing the classical beryllium targets (usuals in neutronotherapy cyclotrons) by a half-thick lithium deuteride target. The target is bombarded by high energy 150 MeV) protons which are beyond the target, deviated out of the neutron beam by a permanent magnet, before to be stopped in a graphite block. Target cooling conditions study and optimisation is presented, followed by the proton deflection block study and realization. The permanent magnet used (SmCo 5 ) is adapted to this target use conditions. Many series of neutronic and dosimetric characteristics measurements allow to verify the theoretical predictions concerning the neutron flux obtained [fr

Hydrogen pumping and release by graphite under high flux plasma bombardment

International Nuclear Information System (INIS)

Hirooka, Y.; Leung, W.K.; Conn, R.W.; Goebel, D.M.; Labombard, B.; Nygren, R.; Wilson, K.L.

1988-01-01

Inert gas (helium or argon) plasma bombardment has been found to increase the surface gas adsorptivity of isotropic graphite (POCO-graphite), which can then getter residual gases in a high vacuum system. The inert gas plasma bombardment was carried out at a flux ∼ 1 x 10 18 ions s -1 cm -2 to a fluence of the order of 10 21 ions/cm 2 and at temperatures around 800 degree C. The plasma bombarding energy was varied between 100 and 200 eV. The gettering speed of the activated graphite surface is estimated to be as large as 25 liters s -1 cm -2 at total pressures between 10 -6 and 10 -7 torr. The gettering capacity estimated is 0.025 torr-liter/cm 2 at room temperature. The gettering capability of graphite can be easily recovered by repeating inert gas plasma bombardment. The activated graphite surface exhibits a smooth, sponge-like morphology with significantly increased pore openings, which correlates with the observed increase in the surface gas adsorptivity. The activated graphite surface has been observed to pump hydrogen plasma particles as well. From calibrated H-alpha measurements, the dynamic hydrogen retention capacity is evaluated to be as large as 2 x 10 18 H/cm 2 at temperatures below 100 degree C and at a plasma bombarding energy of 300 eV

Positron probing of phosphorus-vacancy complexes in silicon irradiated with 15 MeV protons

Science.gov (United States)

Arutyunov, N.; Emtsev, V.; Krause-Rehberg, R.; Elsayed, M.; Kessler, C.; Kozlovski, V.; Oganesyan, G.

2015-06-01

Defects in phosphorus-doped silicon samples of floating-zone material, n-FZ-Si(P), produced under irradiation with 15 MeV protons at room temperature are studied by positron annihilation lifetime spectroscopy over the temperature range of ∼ 30 K - 300 K and by low- temperature Hall effect measurements. After annealing of E-centersand divacancies, we detected for the first time high concentrations of positron traps which had not been observed earlier. These defects are isochronally annealed over the temperature interval of ∼ 320 °C - 700 °C they manifest themselves as electrically neutral deep donor centersin the material of n-type. A long-lived component of the positron lifetime, τ2(I2 enthalpy and entropy of annealing of these centersare Ea ∼ 1.05(0.21) eV and ΔSm ≈ 3.1(0.6)kB, respectively. It is argued that the microstructure of the defect consists of two vacancies, VV, and one atom of phosphorus, P. The split configuration of the VPV complex is shortly discussed.

Porous silicon-based direct hydrogen sulphide fuel cells.

Science.gov (United States)

Dzhafarov, T D; Yuksel, S Aydin

2011-10-01

In this paper, the use of Au/porous silicon/Silicon Schottky type structure, as a direct hydrogen sulphide fuel cell is demonstrated. The porous silicon filled with hydrochlorid acid was developed as a proton conduction membrane. The Au/Porous Silicon/Silicon cells were fabricated by first creating the porous silicon layer in single-crystalline Si using the anodic etching under illumination and then deposition Au catalyst layer onto the porous silicon. Using 80 mM H2S solution as fuel the open circuit voltage of 0.4 V was obtained and maximum power density of 30 W/m2 at room temperature was achieved. These results demonstrate that the Au/Porous Silicon/Silicon direct hydrogen sulphide fuel cell which uses H2S:dH2O solution as fuel and operates at room temperature can be considered as the most promising type of low cost fuel cell for small power-supply units.

Impact and spreading behavior of cluster atoms bombarding substrates

Energy Technology Data Exchange (ETDEWEB)

Fang, Te-Hua, E-mail: fang.tehua@msa.hinet.net [Institute of Mechanical and Electromechanical Engineering, National Formosa University, Yunlin 632, Taiwan (China); Kang, Shao-Hui; Liao, Jia-Hung [Institute of Mechanical and Electromechanical Engineering, National Formosa University, Yunlin 632, Taiwan (China)

2009-12-15

The purpose of this study is to investigate the behavior of copper cluster atoms bombarding a substrate using molecule dynamics based on tight-binding second moment approximation (TB-SMA) potential. The simulated results show that a crater on the substrate surface was created by the impact of the clusters. The variations of kinetic energy of cluster bombardments can be divided into three stages. At the initial impact level, the kinetic energies of the clusters and the substrate were constant. Then, the system went into a sluggish stage of energy variation, in which the kinetic energy of the clusters reduced. In the final stage, the kinetic energy of the system became stable. The high slip vector region around the crater had a disorder damage zone. The symmetry-like cross-slip occurred beneath the top layer of the substrate along the <1 1 0> orientations. The spreading index, temperature, and potential functions that affect the bombardments are also discussed.

Impact and spreading behavior of cluster atoms bombarding substrates

International Nuclear Information System (INIS)

Fang, Te-Hua; Kang, Shao-Hui; Liao, Jia-Hung

2009-01-01

The purpose of this study is to investigate the behavior of copper cluster atoms bombarding a substrate using molecule dynamics based on tight-binding second moment approximation (TB-SMA) potential. The simulated results show that a crater on the substrate surface was created by the impact of the clusters. The variations of kinetic energy of cluster bombardments can be divided into three stages. At the initial impact level, the kinetic energies of the clusters and the substrate were constant. Then, the system went into a sluggish stage of energy variation, in which the kinetic energy of the clusters reduced. In the final stage, the kinetic energy of the system became stable. The high slip vector region around the crater had a disorder damage zone. The symmetry-like cross-slip occurred beneath the top layer of the substrate along the orientations. The spreading index, temperature, and potential functions that affect the bombardments are also discussed.

Scattering of polarized protons by yttrium, iron and nickel nuclei

International Nuclear Information System (INIS)

Melssen, J.P.M.G.

1978-01-01

Results are presented of scattering experiments performed on yttrium and some iron and nickel isotopes with polarized proton beams at energies around 20 MeV. The angular distributions of the differential cross sections and analyzing powers have been measured and comparison of these with predictions from theoretical models has led to information about excited nuclear states like spin, parity and details of the wavefunctions. The DWBA has been mostly used to describe the reaction at the bombarding energies and for the target nuclei investigated. (C.F.)

A recoil-proton fast-neutron counter telescope

International Nuclear Information System (INIS)

Pavan, P.; Toniolo, D.; Zago, G.; Zannoni, R.; Galeazzi, G.; Bressanini, G.

1981-01-01

A recoil-proton neutron counter telescope is described composed of a solid-state silicon transmission detector and a NE 102 A plastic scintillator, measuring the energy loss, the energy of the recoil protons and the time of flight between the two detectors. The counter exposed to monoenergetic neutron beams of energy from 6 to 20 MeV presents a low background and a moderate energy resolution. Its absolute efficiency is calculated up to 50 MeV. (author)

High energy Xe{sup +} ion beam induced ripple structures on silicon

Energy Technology Data Exchange (ETDEWEB)

Hanisch, Antje; Grenzer, Joerg; Facsko, Stefan; Winkler, Ingolf [Forschungszentrum Dresden-Rossendorf, Institute for Ion Beam Physics and Materials Research, Dresden (Germany); Biermanns, Andreas; Grigorian, Souren; Pietsch, Ullrich [University of Siegen (Germany). Institute of Physics

2008-07-01

Ion beam bombardment on semiconductor surfaces leads to well-defined morphological structures in the nanoscale range. Due to the impact of ions a self-organized wave-like surface structure develops. Ion bombardment causes an amorphization of a surface-adjacent layer of several nanometers and creates a periodical structure on the surface as well as at the amorphous-crystalline interface. We investigate the dependence of the periodicity on the crystallography of (100) silicon bombarded with Xe{sup +} ions, the ion beam incidence and the azimutal angle of the sample surface. So far we found that the ripple wavelength scales with the ion energy in a range of 5 to 70 keV. In order to understand the initiation of the ripple formation we also ask the question which role the initial surface structure plays. Therefore we investigate the formation of ripples on pre-structured and rough surfaces such as wafers with an intentional miscut. Therefore, we not only introduce a certain initial roughness but also vary the orientation of the (100) lattice plane in respect to the surface. We distinguish between ion beam induced surface effects (sputter erosion) and the influence of the crystalline Si lattice (strain) on the ripple formation.

ATLAS Silicon Microstrip Tracker

CERN Document Server

Haefner, Petra; The ATLAS collaboration

2010-01-01

The SemiConductor Tracker (SCT), made up from silicon micro-strip detectors is the key precision tracking device in ATLAS, one of the experiments at CERN LHC. The completed SCT is in very good shape: 99.3% of the SCT strips are operational, noise occupancy and hit efficiency exceed the design specifications. In the talk the current status of the SCT will be reviewed. We will report on the operation of the detector and observed problems, with stress on the sensor and electronics performance. TWEPP Summary In December 2009 the ATLAS experiment at the CERN Large Hadron Collider (LHC) recorded the first proton- proton collisions at a centre-of-mass energy of 900 GeV and this was followed by the unprecedented energy of 7 TeV in March 2010. The SemiConductor Tracker (SCT) is the key precision tracking device in ATLAS, made up from silicon micro-strip detectors processed in the planar p-in-n technology. The signal from the strips is processed in the front-end ASICS ABCD3TA, working in the binary readout mode. Data i...

3D Silicon Tracker for AFP - From Qualification to Operation

CERN Document Server

F\\"orster, Fabian Alexander; The ATLAS collaboration

2017-01-01

The ATLAS Forward Proton (AFP) experiment is a detector located ~210 m away from the ATLAS interaction point on both sides. Its aim is to tag and measure forward protons produced in diffractive events. The detector consists of a 3D silicon pixel tracker, to measure the proton trajectory, as well as a time-of-flight system to suppress pileup-related backgrounds. Each tracker and the ToF system are placed inside a Roman Pot, allowing operation in the vicinity of the LHC beam, up to 2-3 mm. AFP was installed in 2 stages during the LHC technical shutdowns of 2015-2016 and 2016-2017. This presentation will give an overview of the silicon sensor qualification as well as the production, assembly and quality assurance of the tracker modules. The installation, commissioning and operation of the full detector will also be discussed.

Influence of ion bombardment on microcrystalline silicon material quality and solar cell performances

OpenAIRE

Bugnon, G; Feltrin, A; Sculati-Meillaud, F; Bailat, J; Ballif, C

2008-01-01

Microcrystalline hydrogenated silicon growth with VHF-PECVD was examined in an industrial type parallel plate KAITM reactor. The influence of pressure on material quality was studied in single junction solar cells. Solar cells with their intrinsic layer prepared at higher pressures exhibit remarkable improvements, reaching 8.2% efficiency at 3.5 mbar. Further analyzes showed that μc- Si:H intrinsic layers grown at higher pressures have a significantly lower defect density. These results are a...

Self-Assembled Gold Nano-Ripple Formation by Gas Cluster Ion Beam Bombardment.

Science.gov (United States)

Tilakaratne, Buddhi P; Chen, Quark Y; Chu, Wei-Kan

2017-09-08

In this study, we used a 30 keV argon cluster ion beam bombardment to investigate the dynamic processes during nano-ripple formation on gold surfaces. Atomic force microscope analysis shows that the gold surface has maximum roughness at an incident angle of 60° from the surface normal; moreover, at this angle, and for an applied fluence of 3 × 10 16 clusters/cm², the aspect ratio of the nano-ripple pattern is in the range of ~50%. Rutherford backscattering spectrometry analysis reveals a formation of a surface gradient due to prolonged gas cluster ion bombardment, although the surface roughness remains consistent throughout the bombarded surface area. As a result, significant mass redistribution is triggered by gas cluster ion beam bombardment at room temperature. Where mass redistribution is responsible for nano-ripple formation, the surface erosion process refines the formed nano-ripple structures.

Residual Nuclides Induced in Cu Target by a 250 MeV Proton Beam

International Nuclear Information System (INIS)

Zhang Hong-Bin; Zhang Xue-Ying; Ma Fei; Ju Yong-Qin; Ge Hong-Lin; Chen Liang; Zhang Yan-Bin; Li Yan-Yan; Luo Peng; Wang Jian-Guo; Wan Bo; Xu Xiao-Wei; Wei Ji-Fang; Zhou Bin

2015-01-01

Residual nuclide production is studied experimentally by bombarding a Cu target with a 250 MeV proton beam. The data are measured by the off-line γ-spectroscopy method. Six nuclides are identified and their cross sections are determined. The corresponding calculated results by the MCNPX and GEANT4 codes are compared with the experimental data to check the validity of the codes. A comparison shows that the MCNPX simulation has a better agreement with the experiment. The energy dependence of residual nuclide production is studied with the aid of MCNPX simulation, and it is found that the mass yields for the nuclides in the light mass region increase significantly with the proton energy. (paper)

Use of positive ion fast atom bombardment mass spectrometry for rapid identification of a bile alcohol glucuronide isolated from cerebrotendinous xanthomatosis patients

International Nuclear Information System (INIS)

Dayal, B.; Salen, G.; Tint, G.S.; Shefer, S.; Benz, S.W.

1990-01-01

The identification of a major biliary and plasma bile alcohol glucuronide, 5 beta-cholestane-3 alpha, 7 alpha, 12 alpha, 25-tetrol-3-0-beta-D-glucuronide, present in cerebrotendinous xanthomatosis (CTX) patients, was investigated by positive ion fast atom bombardment mass spectrometry (FAB-MS). The spectrum was characterized by abundant ions formed by attachment of a proton, [M + H]+, or of alkali ions, [M + Na]+ and [M + 39K]+, to the glucuronide salt. These ions allowed an unambiguous deduction of the molecular weight of the sample. It is suggested that FAB-MS could be used in the rapid diagnosis of CTX

Ion bombardment induced ripple topography on amorphous solids

International Nuclear Information System (INIS)

Carter, G.; Nobes, M.J.; Paton, F.; Williams, J.S.

1977-01-01

Earlier studies of the ion bombardment induced ripple morphology on the surfaces of amorphous solids when compared with geomorphological effects are shown to possess many similar features. The present study, with 40 keV Ar + ion bombarded Si suggests that analogies are incomplete, however, and that greater similarities with the process of macroscopic sandblasting (corrosion) exist. It is shown that the genesis of wave like structures on Si is from isolated features, which have the appearance of ripple trains, which are faceted. It is suggested that these features result from particle flux enhancement processes near surface dimples generated by stress induced surface lifting. (author)

Modeling the Proton Radiation Belt With Van Allen Probes Relativistic Electron-Proton Telescope Data

Science.gov (United States)

Selesnick, R. S.; Baker, D. N.; Kanekal, S. G.; Hoxie, V. C.; Li, X.

2018-01-01

An empirical model of the proton radiation belt is constructed from data taken during 2013-2017 by the Relativistic Electron-Proton Telescopes on the Van Allen Probes satellites. The model intensity is a function of time, kinetic energy in the range 18-600 MeV, equatorial pitch angle, and L shell of proton guiding centers. Data are selected, on the basis of energy deposits in each of the nine silicon detectors, to reduce background caused by hard proton energy spectra at low L. Instrument response functions are computed by Monte Carlo integration, using simulated proton paths through a simplified structural model, to account for energy loss in shielding material for protons outside the nominal field of view. Overlap of energy channels, their wide angular response, and changing satellite orientation require the model dependencies on all three independent variables be determined simultaneously. This is done by least squares minimization with a customized steepest descent algorithm. Model uncertainty accounts for statistical data error and systematic error in the simulated instrument response. A proton energy spectrum is also computed from data taken during the 8 January 2014 solar event, to illustrate methods for the simpler case of an isotropic and homogeneous model distribution. Radiation belt and solar proton results are compared to intensities computed with a simplified, on-axis response that can provide a good approximation under limited circumstances.

Ion peening and stress relaxation induced by low-energy atom bombardment of covalent solids

International Nuclear Information System (INIS)

Koster, Monika; Urbassek, Herbert M.

2001-01-01

Using molecular-dynamics simulation, we study the buildup and relaxation of stress induced by low-energy (≤150 eV) atom bombardment of a target material. The effect is brought out most clearly by using an initially compressed specimen. As target material, we employ Si, based on the Tersoff potential. By varying the bond strength in the potential, we can specifically study its effect on damage production and stress changes. We find that in general, stress is relaxed by the atom bombardment; only for low bombarding energies and strong bonds, atom bombardment increases stress. We rationalize this behavior by considering the role of energized atoms and of recoil-implanted target atoms

Ion beam induced defects in solids studied by optical techniques

International Nuclear Information System (INIS)

Comins, J.D.; Amolo, G.O.; Derry, T.E.; Connell, S.H.; Erasmus, R.M.; Witcomb, M.J.

2009-01-01

Optical methods can provide important insights into the mechanisms and consequences of ion beam interactions with solids. This is illustrated by four distinctly different systems. X- and Y-cut LiNbO 3 crystals implanted with 8 MeV Au 3+ ions with a fluence of 1 x 10 17 ions/cm 2 result in gold nanoparticle formation during high temperature annealing. Optical extinction curves simulated by the Mie theory provide the average nanoparticle sizes. TEM studies are in reasonable agreement and confirm a near-spherical nanoparticle shape but with surface facets. Large temperature differences in the nanoparticle creation in the X- and Y-cut crystals are explained by recrystallisation of the initially amorphised regions so as to recreate the prior crystal structure and to result in anisotropic diffusion of the implanted gold. Defect formation in alkali halides using ion beam irradiation has provided new information. Radiation-hard CsI crystals bombarded with 1 MeV protons at 300 K successfully produce F-type centres and V-centres having the I 3 - structure as identified by optical absorption and Raman studies. The results are discussed in relation to the formation of interstitial iodine aggregates of various types in alkali iodides. Depth profiling of I 3 - and I 5 - aggregates created in RbI bombarded with 13.6 MeV/A argon ions at 300 K is discussed. The recrystallisation of an amorphous silicon layer created in crystalline silicon bombarded with 100 keV carbon ions with a fluence of 5 x 10 17 ions/cm 2 during subsequent high temperature annealing is studied by Raman and Brillouin light scattering. Irradiation of tin-doped indium oxide (ITO) films with 1 MeV protons with fluences from 1 x 10 15 to 250 x 10 15 ions/cm -2 induces visible darkening over a broad spectral region that shows three stages of development. This is attributed to the formation of defect clusters by a model of defect growth and also high fluence optical absorption studies. X-ray diffraction studies show

Ion beam induced defects in solids studied by optical techniques

Science.gov (United States)

Comins, J. D.; Amolo, G. O.; Derry, T. E.; Connell, S. H.; Erasmus, R. M.; Witcomb, M. J.

2009-08-01

Optical methods can provide important insights into the mechanisms and consequences of ion beam interactions with solids. This is illustrated by four distinctly different systems. X- and Y-cut LiNbO 3 crystals implanted with 8 MeV Au 3+ ions with a fluence of 1 × 10 17 ions/cm 2 result in gold nanoparticle formation during high temperature annealing. Optical extinction curves simulated by the Mie theory provide the average nanoparticle sizes. TEM studies are in reasonable agreement and confirm a near-spherical nanoparticle shape but with surface facets. Large temperature differences in the nanoparticle creation in the X- and Y-cut crystals are explained by recrystallisation of the initially amorphised regions so as to recreate the prior crystal structure and to result in anisotropic diffusion of the implanted gold. Defect formation in alkali halides using ion beam irradiation has provided new information. Radiation-hard CsI crystals bombarded with 1 MeV protons at 300 K successfully produce F-type centres and V-centres having the I3- structure as identified by optical absorption and Raman studies. The results are discussed in relation to the formation of interstitial iodine aggregates of various types in alkali iodides. Depth profiling of I3- and I5- aggregates created in RbI bombarded with 13.6 MeV/A argon ions at 300 K is discussed. The recrystallisation of an amorphous silicon layer created in crystalline silicon bombarded with 100 keV carbon ions with a fluence of 5 × 10 17 ions/cm 2 during subsequent high temperature annealing is studied by Raman and Brillouin light scattering. Irradiation of tin-doped indium oxide (ITO) films with 1 MeV protons with fluences from 1 × 10 15 to 250 × 10 15 ions/cm -2 induces visible darkening over a broad spectral region that shows three stages of development. This is attributed to the formation of defect clusters by a model of defect growth and also high fluence optical absorption studies. X-ray diffraction studies show

Electrochemically assisted fast-atom-bombardment mass spectrometry

International Nuclear Information System (INIS)

Phillips, L.R.

1988-01-01

The hybridization of electrochemistry and fast atom bombardment (FAB) mass spectrometry (MS) creates a new hyphenated technique, referred to as electrochemically assisted FAB (EFAB) MS, which improves the applicability of FAB MS in selectivity and extends the range of compounds to include low polarity molecules, and also reduces mass spectral complications due to matrix-related artifacts. FAB MS has proven to be indispensable in analysis of samples that are otherwise too intractable for conventional MS, such as peptides, oligosaccharides, and oligonucleotides, due to low volatility and ready thermal degradation. There are limits on its applicability, however, in that it works best with samples that are already ionic, or predisposed to become so by simple proton transfer to or from the matrix. A wide range of chemical substances can be ionized/analyzed by electrochemical methods. Therefore, a possible approach towards improving applicability of FAB MS is through its hybridization with electrochemistry. Samples are activated by electrolysis, carried out directly in the sample matrix through use of a modified FAB sample probe which was constructed containing a small electrolytic cell on the tip. In operation, one electrode is held at normal sample-probe/ion-source voltage, while the other electrode can be continuously varied ±15 volts to create electrochemical potentials. Several chemical substances, known to be unresponsive to FAB MS, have been examined by EFAB MS. Resultant spectra generally show a dramatic increases in signal/chemical noise ratio of structurally significant ions when compared to normal FAB spectra

Measurements on irradiated L1 sensor prototypes for the D0 Run IIb silicon detector project

International Nuclear Information System (INIS)

Ahsan, M.; Bolton, T.; Carnes, K.; Demarteau, M.; Demina, R.; Gray, T.; Korjenevski, S.; Lehner, F.; Lipton, R.; Mao, H.S.; McCarthy, R.

2010-01-01

We report on irradiation studies of Hamamatsu prototype silicon microstrip detectors for layer 1 of the D0 upgrade project for Run IIb. The irradiation was carried out with 10 MeV protons up to proton fluence of 10 14 p/cm 2 at the J.R. Macdonald Laboratory, Manhatten, KS. The flux calibration was carefully checked using different dose normalization techniques. The results based on the obtained sensor leakage currents after irradiation show that the NIEL scaling hypothesis for low energy protons has to be applied with great care. We observe 30-40% less radiation damage in silicon for 10 MeV proton exposure than is expected from the predicted NIEL scaling.

Measurements on irradiated L1 sensor prototypes for the D0 Run IIb silicon detector project

Energy Technology Data Exchange (ETDEWEB)

Ahsan, M.; Bolton, T.; Carnes, K.; /Kansas State U.; Demarteau, M.; /Fermilab; Demina, R.; /Rochester U.; Gray, T.; /Kansas State U.; Korjenevski, S.; /Rochester U.; Lehner, F.; /Zurich U.; Lipton, R.; Mao, H.S.; /Fermilab; McCarthy, R.; /SUNY, Stony Brook /Kansas State U. /Fermilab

2010-01-01

We report on irradiation studies of Hamamatsu prototype silicon microstrip detectors for layer 1 of the D0 upgrade project for Run IIb. The irradiation was carried out with 10 MeV protons up to proton fluence of 10{sup 14} p/cm{sup 2} at the J.R. Macdonald Laboratory, Manhatten, KS. The flux calibration was carefully checked using different dose normalization techniques. The results based on the obtained sensor leakage currents after irradiation show that the NIEL scaling hypothesis for low energy protons has to be applied with great care. We observe 30-40% less radiation damage in silicon for 10 MeV proton exposure than is expected from the predicted NIEL scaling.

Diffusion processes in bombardment-induced surface topography

International Nuclear Information System (INIS)

Robinson, R.S.

1984-01-01

The bombardment of surfaces with moderate energy ions can lead to the development of various micron-sized surface structures. These structures include ridges, ledges, flat planes, pits and cones. The causal phenomena in the production of these features are sputtering, ion reflection, redeposition of sputtered material, and surface diffusion of both impurity and target-atom species. The authors concentrate on the formation of ion bombardment-induced surface topography wherein surface diffusion is a dominant process. The most thoroughly understood aspect of this topography development is the generation of cone-like structures during sputtering. The formation of cones during sputtering has been attributed to three effects. These are: (1) the presence of asperities, defects, or micro-inclusions in the surface layers, (2) the presence of impurities on the surfaces, and (3) particular crystal orientations. (Auth.)

M-subshell ionization of U by light-ion bombardment

International Nuclear Information System (INIS)

Jesus, A.P.; Ribeiro, J.P.

1988-01-01

M X-rays of U were produced by proton, deuteron and alpha-particle bombardment in the energy range of 0.20-1.00 MeV/u. N 6.7 →M 5 ((M subα)),N 6 →M 4 (M β ), N 5 →M 3 (M γ ), N 4 →M 2 and N 2 →M 1 line yields were obtained from a least-squares fit to the spectra and used to convert M X-ray production into M-subshell ionization cross sections. The uncertainty induced by the atomic parameters (X-ray fluorescence yields, Coster-Kronig and radiative transition rates) used in the conversion is discussed. The subshell ionization cross sections are then compared to PWBA values corrected for Coulomb deflection and energy loss according to Brandt and Lapicki, to the semiclassical theoretical values of Kocbach and to relativistic PWBA results, corrected for Coulomb and binding effects, of Chen et al. Intrashell transitions induced by the projectile and multiple ionization are suggested as causes of disagreement between theory and experiment, especially for alpha-particles. It is concluded that theory must go beyond the simple picture of the first-order pertubation approximation to explain M-subshell results and the care must be taken in the choice of wave functions. (author) [pt

Radiation damage studies for the DOe silicon detector

International Nuclear Information System (INIS)

Lehner, Frank

2004-01-01

We report on irradiation studies performed on spare production silicon detector modules for the current DOe silicon detector. The lifetime expectations due to radiation damage effects of the existing silicon detector are reviewed. A new upgrade project was started with the goal of a complete replacement of the existing silicon detector. In that context, several investigations on the radiation hardness of new prototype silicon microstrip detectors were carried out. The irradiation on different detector types was performed with 10 MeV protons up to fluences of 10 14 p/cm 2 at the J.R. Mcdonald Laboratory at Kansas State University. The flux calibration was carefully checked using different normalisation techniques. As a result, we observe roughly 40-50% less radiation damage in silicon for 10 MeV p exposure than it is expected by the predicted NIEL scaling

Study on 150μm thick n- and p-type epitaxial silicon sensors irradiated with 24 GeV/c protons and 1 MeV neutrons

International Nuclear Information System (INIS)

Kaska, Katharina; Moll, Michael; Fahrer, Manuel

2010-01-01

A study on 150μm epitaxial (EPI) n- and p-type silicon diodes irradiated with neutrons up to 8x10 15 n/cm 2 and protons up to 1.7x10 15 p/cm 2 has been performed by means of CV/IV, charge collection efficiency (CCE) and transient current technique (TCT) measurements. It is found that the effective space charge density increases three times faster after proton than after neutron irradiation with a slightly higher effective space charge generation rate for n-type material compared to p-type material. A drop in charge collection efficiency already at fluences of 1x10 12 n eq /cm 2 can be seen in n-type material, but is absent in p-type material. TCT measurements show space charge sign inversion from positive to negative charge in n-type material after neutron irradiation and from negative to positive space charge in p-type material after proton irradiation. No difference was found in the response of diodes manufactured by different producers out of the same wafer material.

Excited-atom production by electron and ion bombardment of alkali halides

International Nuclear Information System (INIS)

Walkup, R.E.; Avouris, P.; Ghosh, A.P.

1987-01-01

We present experimental results on the production of excited atoms by electron and ion bombardment of alkali halides. For the case of electron bombardment, Doppler shift measurements show that the electronically excited atoms have a thermal velocity distribution in equilibrium with the surface temperature. Measurements of the absolute yield of excited atoms, the distribution of population among the excited states, and the systematic dependence on incident electron current and sample temperature support a model in which the excited atoms are produced by gas-phase collisions between desorbed ground-state atoms and secondary electrons. In contrast, for the case of ion bombardment, the excited atoms are directly sputtered from the surface, with velocity distributions characteristic of a collision cascade, and with typical energies of --10 eV

The effects of thermal annealing on iron bombarded InP/InGaAs multilayer structures

International Nuclear Information System (INIS)

Subramaniam, S.C.; Rezazadeh, A.A.

2006-01-01

The effects of Fe-ion bombardment at 77 K (cold) and room temperature (RT) into single layer InGaAs, InP and multilayer InP/InGaAs HBT structures have been investigated. Annealing characteristics and RF dissipation loss measurements of Fe-ion bombarded samples at 77 K indicated good electrical isolation in n-, p-type InGaAs materials and InP/InGaAs HBT structures. Thermally stable (up to 250 deg. C) high sheet resistance (R sh ) of ∼5 x 10 6 Ω/sq has been achieved on these samples while higher R sh of ∼10 7 Ω/sq was obtained for the n-InP materials bombarded with similar conditions. Dissipation losses of 1.7 dB/cm at 10 GHz and 2.8 dB/cm at 40 GHz have been measured for the cold Fe-ion bombarded InP-based HBT structures. This result is similar to those obtained for an un-bombarded S.I. InP substrate, indicating good electrical isolation. We have also determined electron trapping levels by thermal annealing for the cold and RT Fe-ion bombarded samples. It is shown that the high resistivity achieved in the cold implanted InGaAs layer is most likely due to the creation of mid-bandgap defect levels (E C - 0.33) eV, which are created only in the cold Fe-ion bombardment. The DC isolation and RF dissipation loss analysis have been used to identify a suitable bombardment scheme for the fabrication of planar InP/InGaAs HBTs

Surface roughening of silicon, thermal silicon dioxide, and low-k dielectric coral films in argon plasma

International Nuclear Information System (INIS)

Yin Yunpeng; Sawin, Herbert H.

2008-01-01

The surface roughness evolutions of single crystal silicon, thermal silicon dioxide (SiO 2 ), and low dielectric constant film coral in argon plasma have been measured by atomic force microscopy as a function of ion bombardment energy, ion impingement angle, and etching time in an inductively coupled plasma beam chamber, in which the plasma chemistry, ion energy, ion flux, and ion incident angle can be adjusted independently. The sputtering yield (or etching rate) scales linearly with the square root of ion energy at normal impingement angle; additionally, the angular dependence of the etching yield of all films in argon plasma followed the typical sputtering yield curve, with a maximum around 60 deg. -70 deg. off-normal angle. All films stayed smooth after etching at normal angle but typically became rougher at grazing angles. In particular, at grazing angles the rms roughness level of all films increased if more material was removed; additionally, the striation structure formed at grazing angles can be either parallel or transverse to the beam impingement direction, which depends on the off-normal angle. More interestingly, the sputtering caused roughness evolution at different off-normal angles can be qualitatively explained by the corresponding angular dependent etching yield curve. In addition, the roughening at grazing angles is a strong function of the type of surface; specifically, coral suffers greater roughening compared to thermal silicon dioxide

Preliminary report into the effects of nitrogen ion bombardment treatment on mustard seeds

International Nuclear Information System (INIS)

Smith, C.W.; Al-Hashmi, S.A.R.; Ahmed, N.A.G.; Pollard, M.

1988-01-01

Mustard seeds have been subjected to nitrogen ion bombardment. A range of conditions was found within which there was an enhancement in the growth of seedlings from the ion bombardment treated seeds relative to those grown from control seeds. Scanning electron microscopy was used to examine seeds after treatment. It appeared that there had been an etching of the seed coating by the ion bombardment. This view was supported by experiments which showed that the rate of capillary water uptake by the treated seeds had been enhanced. (author)

Dating Howardite Melt Clasts: Evidence for an Extended Vestan Bombardment?

Science.gov (United States)

Cartwright, J. A.; Hodges, K. V.; Wadhwa, M.; Mittlefehldt, D. W.

2016-01-01

Howardites are polymict breccias that, together with eucrites and diogenites (HED), likely originate from the vestan surface (regolith/ megaregolith), and display a heterogeneous distribution of eucritic and diogenitic material. Melt clasts are also present alongside other regolithic features within howardites, and are noteworthy for their compositional variability and appearance. Melt clasts formed by impact events provide a snapshot of the timings and conditions of surface gardening and bombardment on the vestan surface. By dating such clasts, we aim to better constrain the timings of impact events on Vesta, and to establish whether the impact flux in the asteroid belt was similar to that on the Moon. As the Moon is used as the basis for characterising impact models of the inner solar system, it is necessary to verify that apparent wide-scale events are seen in other planetary bodies. In particular, the observed clustering of Apollo melt clast ages between 3.8-4.0 Ga has led to two hypotheses: 1) The Moon was subjected to a sudden event - 'Lunar Cataclysm' or period of 'Late Heavy Bombardment' (LHB), 2) The age cluster represents the end of an epoch of declining bombardment or 'Heavy Bombardment. No consensus has emerged regarding one or other hypothesis. We are testing these hypotheses by seeking evidence for such events in materials other than those derived from the Moon.

Performance of irradiated silicon microstrip detectors

International Nuclear Information System (INIS)

Catacchini, E.; Civinini, C.; D'Alessandro, R.; Focardi, E.; Lenzi, M.; Meschini, M.; Parrini, G.; Pieri, M.

1999-01-01

Silicon microstrip devices to be installed in Large Hadron Collider (LHC) tracking detectors will have to operate in a high radiation environment. We report on performance studies of silicon microstrip detectors irradiated with neutrons or protons, up to fluences comparable to the first ten years of running at LHC. Obtained results show that irradiated detectors can still be operated with satisfactory signal-to-noise ratio,and in the case of inhomogeneously type inverted detector a very good position resolution is achieved regardless of the zone crossed by the particle

Silicon sensor probing and radiation studies for the LHCb silicon tracker

International Nuclear Information System (INIS)

Lois, Cristina

2006-01-01

The LHCb Silicon Tracker (ST) will be built using silicon micro-strip technology. A total of 1400 sensors, with strip pitches of approximately 200μm and three different substrate thicknesses, will be used to cover the sensitive area with readout strips up to 38cm in length. We present the quality assurance program followed by the ST group together with the results obtained for the first batches of sensors from the main production. In addition, we report on an investigation of the radiation hardness of the sensors. Prototype sensors were irradiated with 24GeV/c protons up to fluences equivalent to 20 years of LHCb operation. The damage coefficient for the leakage current was studied, and full depletion voltages were determined

Silicon vertex tracker for RHIC PHENIX experiment

Energy Technology Data Exchange (ETDEWEB)

Taketani, A [RIKEN, Nishina Ctr Accelerator Based Sci, Wako, Saitama, Japan; Cianciolo, Vince [ORNL; Enokizono, Akitomo [Oak Ridge National Laboratory (ORNL); PHENIX, Collaboration [The

2010-01-01

The PHENIX experiment at Relativistic Heavy Ion Collider will be equipped with Silicon Vertex tracker to enhance its physics capability. There are four layers of silicon sensor to reconstruct charged tracks with 50 {micro}m resolution of decay length measurement. The VTX surrounds the collision point. The inner two layers and the outer two layers are composed of 30 pixel ladders and 44 stripixel ladders, respectively. We have been developing these detectors and done a performance test with 120 GeV proton beam.

Developments in Silicon Detectors and their impact on LHCb Physics Measurements

CERN Document Server

Gouldwell-Bates, A

2005-01-01

The LHCb experiment is a high energy physics detector at the Large Hadron Collider (LHC) which will probe the current understanding of the Standard Model through precise measurements of CP violation and rare decays. The LHCb detector heavily depends on the silicon vertexing (VELO) sub-detector for excellent vertex and proper decay time resolutions. The VELO detector sits at a position of only 7 mm from the LHC proton beams. However, the proximity of the silicon sensors to the proton beams results in the detectors suffering radiation damage. Radiation damage results in three changes in the macroscopic properties of the silicon detector: an increase of the leakage current, a decrease in the charge collection efficiency, and changes in the operation voltage required to fully deplete the silicon detector of the free charge carriers. Due to this radiation damage, it is expected that a replacement or upgrade of the LHCb vertex detector will be required by 2010, only 3 years after the turn-on of the LHC. This thesis...

The development of MEMS device packaging technology using proton beam

International Nuclear Information System (INIS)

Hyeon, J. W.; Kong, Y. J.; Kim, E. H.; Kim, H. S.; No, S. J.

2006-05-01

Wafer-bonding techniques are key issues for the commercialization of MEMS(MicroElectroMechanical Systems) devices. The anodic bonding method and the wafer direct-bonding method are well-known major techniques for wafer bonding. Due to the anodic bonding method includes high voltage processes above 1.5 kV, the MEMS devices can be damaged during the bonding process or malfunctioned while long-term operation. On the other hand, since the wafer direct-bonding method includes a high temperature processes above 1000 .deg. C, temperature-sensitive materials and integrated circuits will be damaged or degraded during the bonding processes. Therefore, high-temperature bonding processes are not applicable for fabricating or packaging devices where temperature-sensitive materials exist. During the past few years, much effort has been undertaken to find a reliable bonding process that can be conducted at a low temperature. Unfortunately, these new bonding processes depend highly on the bonding material, surface treatment and surface flatness. In this research, a new packaging method using proton beam irradiation is proposed. While the energy loss caused in an irradiated material by X-rays or electron beams decreases with the surface distance, the energy loss caused by proton beams has a maximum value at the Bragg peak. Thus, the localized energy produced at the Bragg peak of the proton beams can be used to bond pyrex glass on a silicon wafer, so the MEMS damage is expected to be minimized. The localized heating caused by as well as the penetration depth, or the proton beam has been investigated. The energy absorbed in a stack of pyrex glass/silicon wafers due to proton-beam irradiation was numerically calculated for various proton energies by using the SRIM program. The energy loss was shown to be sufficiently localized at the interface between the pyrex glass and the silicon wafer. Proton beam irradiation was performed in the common environment of room temperature and

Nanostructured Porous Silicon Photonic Crystal for Applications in the Infrared

Directory of Open Access Journals (Sweden)

G. Recio-Sánchez

2012-01-01

Full Text Available In the last decades great interest has been devoted to photonic crystals aiming at the creation of novel devices which can control light propagation. In the present work, two-dimensional (2D and three-dimensional (3D devices based on nanostructured porous silicon have been fabricated. 2D devices consist of a square mesh of 2 μm wide porous silicon veins, leaving 5×5 μm square air holes. 3D structures share the same design although multilayer porous silicon veins are used instead, providing an additional degree of modulation. These devices are fabricated from porous silicon single layers (for 2D structures or multilayers (for 3D structures, opening air holes in them by means of 1 KeV argon ion bombardment through the appropriate copper grids. For 2D structures, a complete photonic band gap for TE polarization is found in the thermal infrared range. For 3D structures, there are no complete band gaps, although several new partial gaps do exist in different high-symmetry directions. The simulation results suggest that these structures are very promising candidates for the development of low-cost photonic devices for their use in the thermal infrared range.

Photocarrier radiometry for predicting the degradation of electrical parameters of monocrystalline silicon (c-Si) solar cell irradiated by 100 KeV proton beams

International Nuclear Information System (INIS)

Song, P.; Liu, J.Y.; Yuan, H.M.; Oliullah, Md.; Wang, F.; Wang, Y.

2016-01-01

In this study, the monocrystalline silicon (c-Si) solar cell irradiated by 100 KeV proton beams at various fluences is investigated. A one-dimensional two-layer carrier density wave model has been developed to estimate the minority carrier lifetime of n-region and p-region of the non-irradiated c-Si solar cell by best fitting with the experimental photocarrier radiometry (PCR) signal (the amplitude and the phase). Furthermore, the lifetime is used to determine the initial defect density of the quasi-neutral region (QNR) of the solar cell to predict its I–V characteristics. The theoretically predicted short-circuit current density (J_s_c), and open-circuit voltage (V_o_c) of the non-irradiated samples are in good agreement with experiment. Then a three-region defect distribution model for the c-Si solar cell irradiated by proton beams is carried out to describe the defect density distribution according to Monte Carlo simulation results and the initial defect density of the non-irradiated sample. Finally, we find that the electrical measurements of J_s_c and V_o_c of the solar cells irradiated at different fluences using 100 KeV proton beams are consistent with the PCR predicting results.

Photocarrier radiometry for predicting the degradation of electrical parameters of monocrystalline silicon (c-Si) solar cell irradiated by 100 KeV proton beams

Energy Technology Data Exchange (ETDEWEB)

Song, P. [School of Mechatronics Engineering, Harbin Institute of Technology, Harbin 150001 (China); Liu, J.Y., E-mail: ljywlj@hit.edu.cn [School of Mechatronics Engineering, Harbin Institute of Technology, Harbin 150001 (China); State Key Laboratory of Robotics and System (HIT), Harbin 150001 (China); Yuan, H.M.; Oliullah, Md.; Wang, F. [School of Mechatronics Engineering, Harbin Institute of Technology, Harbin 150001 (China); Wang, Y., E-mail: songpengkevin@126.com [School of Mechatronics Engineering, Harbin Institute of Technology, Harbin 150001 (China); State Key Laboratory of Robotics and System (HIT), Harbin 150001 (China)

2016-09-15

In this study, the monocrystalline silicon (c-Si) solar cell irradiated by 100 KeV proton beams at various fluences is investigated. A one-dimensional two-layer carrier density wave model has been developed to estimate the minority carrier lifetime of n-region and p-region of the non-irradiated c-Si solar cell by best fitting with the experimental photocarrier radiometry (PCR) signal (the amplitude and the phase). Furthermore, the lifetime is used to determine the initial defect density of the quasi-neutral region (QNR) of the solar cell to predict its I–V characteristics. The theoretically predicted short-circuit current density (J{sub sc}), and open-circuit voltage (V{sub oc}) of the non-irradiated samples are in good agreement with experiment. Then a three-region defect distribution model for the c-Si solar cell irradiated by proton beams is carried out to describe the defect density distribution according to Monte Carlo simulation results and the initial defect density of the non-irradiated sample. Finally, we find that the electrical measurements of J{sub sc} and V{sub oc} of the solar cells irradiated at different fluences using 100 KeV proton beams are consistent with the PCR predicting results.

Giant photoeffect in proton transport through graphene membranes

Science.gov (United States)

Lozada-Hidalgo, Marcelo; Zhang, Sheng; Hu, Sheng; Kravets, Vasyl G.; Rodriguez, Francisco J.; Berdyugin, Alexey; Grigorenko, Alexander; Geim, Andre K.

2018-04-01

Graphene has recently been shown to be permeable to thermal protons1, the nuclei of hydrogen atoms, which sparked interest in its use as a proton-conducting membrane in relevant technologies1-4. However, the influence of light on proton permeation remains unknown. Here we report that proton transport through Pt-nanoparticle-decorated graphene can be enhanced strongly by illuminating it with visible light. Using electrical measurements and mass spectrometry, we find a photoresponsivity of ˜104 A W-1, which translates into a gain of ˜104 protons per photon with response times in the microsecond range. These characteristics are competitive with those of state-of-the-art photodetectors that are based on electron transport using silicon and novel two-dimensional materials5-7. The photo-proton effect could be important for graphene's envisaged use in fuel cells and hydrogen isotope separation. Our observations may also be of interest for other applications such as light-induced water splitting, photocatalysis and novel photodetectors.

Radiation damage studies for the D0 silicon detector

International Nuclear Information System (INIS)

Lehner, F.

2004-01-01

We report on irradiation studies performed on spare production silicon detector modules for the current D0 silicon detector. The lifetime expectations due to radiation damage effects of the existing silicon detector are reviewed. A new upgrade project was started with the goal of a complete replacement of the existing silicon detector. In that context, several investigations on the radiation hardness of new prototype silicon microstrip detectors were carried out. The irradiation on different detector types was performed with 10 MeV protons up to fluences of 10 14 p/cm 2 at the J.R. Mcdonald Laboratory at Kansas State University. The flux calibration was carefully checked using different normalization techniques. As a result, we observe roughly 40-50% less radiation damage in silicon for 10 MeV p exposure than it is expected by the predicted NIEL scaling

Bombardment of gas molecules on single graphene layer at high temperature

Energy Technology Data Exchange (ETDEWEB)

Murugesan, Ramki [School of Mechanical and Aerospace Engineering, Gyeongsang National University, Jinju, Gyeongnam 660-701 (Korea, Republic of); Park, Jae Hyun [Department of Aerospace and System Engineering and Research Center for Aircraft Parts Technology, Gyeongsang National University, Jinju, Gyeongnam 660-701 (Korea, Republic of); Ha, Dong Sung [Future Propulsion Center, Agency for Defense Development, Daejeon 305-600 (Korea, Republic of)

2014-12-09

Graphite is widely used as a material for rocket-nozzle inserts due to its excellent thermo-physical properties as well as low density. During the operation of rockets, the surface of the graphite nozzle is subjected to very high heat fluxes and the undesirable erosion of the surface occurs due to the bombardment of gas molecules with high kinetic energy, which causes a significant reduction of nozzle performance. However, the understanding and quantification of such bombardment is not satisfactory due to its complexity: The bond breaking-forming happens simultaneously for the carbon atoms of graphene, some gas molecules penetrate through the surface, some of them are reflected from the surface, etc. In the present study, we perform extensive molecular dynamics (MD) simulations to examine the bombardment phenomena in high temperature environment (several thousand Kelvin). Advanced from the previous studies that have focused on the bombardment by light molecules (e.g., H{sub 2}), we will concentrate on the impact by realistic molecules (e.g., CO{sub 2} and H{sub 2}O). LAMMPS is employed for the MD simulations with NVE ensemble and AIREBO potential for graphene. The molecular understanding of the interaction between graphene and highly energetic gas molecules will enable us to design an efficient thermo-mechanical protection system.

Mechanisms of ion-bombardment-induced DNA transfer into bacterial E. coli cells

Energy Technology Data Exchange (ETDEWEB)

Yu, L.D., E-mail: yuld@thep-center.org [Thailand Center of Excellence in Physics, Commission on Higher Education, 328 Si Ayutthaya Road, Bangkok 10400 (Thailand); Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Sangwijit, K. [Molecular Biology Laboratory, Department of Biology, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Prakrajang, K. [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Faculty of Science, Maejo University, Chiang Mai 50290 (Thailand); Phanchaisri, B. [Institute of Science and Technology Research, Chiang Mai University, Chiang Mai 50200 (Thailand); Thongkumkoon, P. [Thailand Center of Excellence in Physics, Commission on Higher Education, 328 Si Ayutthaya Road, Bangkok 10400 (Thailand); Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Thopan, P. [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Singkarat, S. [Thailand Center of Excellence in Physics, Commission on Higher Education, 328 Si Ayutthaya Road, Bangkok 10400 (Thailand); Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Anuntalabhochai, S. [Molecular Biology Laboratory, Department of Biology, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand)

2014-05-01

Highlights: • Ion bombardment could induce DNA transfer into E. coli cells. • The DNA transfer induction depended on ion energy and fluence. • The mechanism was associated with the bacterial cell envelope structure. • A mechanism phase diagram was proposed to summarize the mechanism. - Abstract: As a useful ion beam biotechnology, ion-bombardment-induced DNA transfer into bacterial Escherichia coli (E. coli) cells has been successfully operated using argon ions. In the process ion bombardment of the bacterial cells modifies the cell envelope materials to favor the exogenous DNA molecules to pass through the envelope to enter the cell. The occurrence of the DNA transfer induction was found ion energy and fluence dependent in a complex manner. At ion energy of a few keV and a few tens of keV to moderate fluences the DNA transfer could be induced by ion bombardment of the bacterial cells, while at the same ion energy but to high fluences DNA transfer could not be induced. On the other hand, when the ion energy was medium, about 10–20 keV, the DNA transfer could not be induced by ion bombardment of the cells. The complexity of the experimental results indicated a complex mechanism which should be related to the complex structure of the bacterial E. coli cell envelope. A phase diagram was proposed to interpret different mechanisms involved as functions of the ion energy and fluence.

Mechanisms of ion-bombardment-induced DNA transfer into bacterial E. coli cells

International Nuclear Information System (INIS)

Yu, L.D.; Sangwijit, K.; Prakrajang, K.; Phanchaisri, B.; Thongkumkoon, P.; Thopan, P.; Singkarat, S.; Anuntalabhochai, S.

2014-01-01

Highlights: • Ion bombardment could induce DNA transfer into E. coli cells. • The DNA transfer induction depended on ion energy and fluence. • The mechanism was associated with the bacterial cell envelope structure. • A mechanism phase diagram was proposed to summarize the mechanism. - Abstract: As a useful ion beam biotechnology, ion-bombardment-induced DNA transfer into bacterial Escherichia coli (E. coli) cells has been successfully operated using argon ions. In the process ion bombardment of the bacterial cells modifies the cell envelope materials to favor the exogenous DNA molecules to pass through the envelope to enter the cell. The occurrence of the DNA transfer induction was found ion energy and fluence dependent in a complex manner. At ion energy of a few keV and a few tens of keV to moderate fluences the DNA transfer could be induced by ion bombardment of the bacterial cells, while at the same ion energy but to high fluences DNA transfer could not be induced. On the other hand, when the ion energy was medium, about 10–20 keV, the DNA transfer could not be induced by ion bombardment of the cells. The complexity of the experimental results indicated a complex mechanism which should be related to the complex structure of the bacterial E. coli cell envelope. A phase diagram was proposed to interpret different mechanisms involved as functions of the ion energy and fluence

Investigation of the silicon ion density during molecular beam epitaxy growth

CERN Document Server

Eifler, G; Ashurov, K; Morozov, S

2002-01-01

Ions impinging on a surface during molecular beam epitaxy influence the growth and the properties of the growing layer, for example, suppression of dopant segregation and the generation of crystal defects. The silicon electron gun in the molecular beam epitaxy (MBE) equipment is used as a source for silicon ions. To use the effect of ion bombardment the mechanism of generation and distribution of ions was investigated. A monitoring system was developed and attached at the substrate position in the MBE growth chamber to measure the ion and electron densities towards the substrate. A negative voltage was applied to the substrate to modify the ion energy and density. Furthermore the current caused by charge carriers impinging on the substrate was measured and compared with the results of the monitoring system. The electron and ion densities were measured by varying the emission current of the e-gun achieving silicon growth rates between 0.07 and 0.45 nm/s and by changing the voltage applied to the substrate betw...

Characterisation of silicon carbide films deposited by plasma-enhanced chemical vapour deposition

International Nuclear Information System (INIS)

Iliescu, Ciprian; Chen Bangtao; Wei Jiashen; Pang, A.J.

2008-01-01

The paper presents a characterisation of amorphous silicon carbide films deposited in plasma-enhanced chemical vapour deposition (PECVD) reactors for MEMS applications. The main parameter was optimised in order to achieve a low stress and high deposition rate. We noticed that the high frequency mode (13.56 MHz) gives a low stress value which can be tuned from tensile to compressive by selecting the correct power. The low frequency mode (380 kHz) generates high compressive stress (around 500 MPa) due to ion bombardment and, as a result, densification of the layer achieved. Temperature can decrease the compressive value of the stress (due to annealing effect). A low etching rate of the amorphous silicon carbide layer was noticed for wet etching in KOH 30% at 80 o C (around 13 A/min) while in HF 49% the layer is practically inert. A very slow etching rate of amorphous silicon carbide layer in XeF 2 -7 A/min- was observed. The paper presents an example of this application: PECVD-amorphous silicon carbide cantilevers fabricated using surface micromachining by dry-released technique in XeF 2

Kinetics of interaction from low-energy-ion bombardment of surfaces

International Nuclear Information System (INIS)

Horton, C.C.

1988-01-01

The kinetics of interaction from low energy oxygen ion bombardment of carbon and Teflon surfaces have been investigated. The surfaces were bombarded with 4.5 to 93 eV oxygen ions and emitted species were observed with a mass spectrometer. To obtain the kinetic information, the ion beam was square pulse modulated and reaction products were observed as a function of time. The kinetic information is contained in the response of the emitted species to the pulsed ion beam. Oxygen bombardment of carbon produced CO in three parallel branches with each following an adsorption-desorption process. The fast branch, with a rate constants of 12,000/sec, appeared to be sputter induced an was absent below about 19 eV. The medium and slow branches, with rate constants of 850/sec and 45/sec respectively, has little energy dependence and appeared to be due to chemical sputtering from two sites. The ratio of the fraction of the medium branch to that of the slow was constant at 1:3. The bombardment of Teflon produced CF in two parallel branches, with one following a series process and the other an adsorb-desorb process. The rate constant of the other branch were 22,000/sec and 7,000/sec and the rate constant of the other branch was 90/sec. The total signal fell monotonically with decreasing ion energy with the fraction for each branch holding constant at 71% for the series and 29% for the adsorb-desorb

Tuning the cathodoluminescence of porous silicon films

International Nuclear Information System (INIS)

Biaggi-Labiosa, A.; Fonseca, L.F.; Resto, O.; Balberg, I.

2008-01-01

We have obtained intense cathodoluminescence (CL) emission from electron beam modified porous silicon films by excitation with electrons with kinetic energies below 2 keV. Two types of CL emissions were observed, a stable one and a non-stable one. The first type is obtained in well-oxidized samples and is characterized by a spectral peak that is red shifted with respect to the photoluminescence (PL) peak. The physically interesting and technologically promising CL is however the CL that correlates closely with the PL. Tuning of this CL emission was achieved by controlling the average size of the nanostructure thus showing that the origin of this CL emission is associated with the quantum confinement and the surface chemistry effects that are known to exist in the porous silicon system. We also found that the electron bombardment causes microscale morphological modifications of the films, but the nanoscale features appear to be unchanged. The structural changes are manifested by the increase in the density of the nanoparticles which explains the significant enhancement of the PL that follows the electron irradiation

Performance of a silicon microstrip detector in a high radiation environment

International Nuclear Information System (INIS)

Mishra, C.S.; Brown, C.N.; Kapustinsky, J.; Leitch, M.J.; McGaughey, P.L.; Peng, J.C.; Sailor, W.; Holzscheiter, K.; Sadler, M.

1990-01-01

This paper reports on the performance of a silicon microstrip detector that has been studied in a high rate environment using electron, pion, and proton beams. The pulse height, time response, and leakage current have been studied as a function of particle fluence up to a total integrated flus of about 4 x 10 14 protons/cm 2

Impact of Ion Bombardment on the Structure and Magnetic Properties of Fe78Si13B9 Amorphous Alloy

Science.gov (United States)

Wu, Yingwei; Peng, Kun

2018-06-01

Amorphous Fe78Si13B9 alloy ribbons were bombarded by ion beams with different incident angles ( θ ). The evolution of the microstructure and magnetic properties of ribbons caused by ion beam bombardment was investigated by x-ray diffraction, transmission electron microscope and vibrating sample magnetometer analysis. Low-incident-angle bombardment led to atomic migration in the short range, and high-incident-angle bombardment resulted in the crystallization of amorphous alloys. Ion bombardment induces magnetic anisotropy and affects magnetic properties. The effective magnetic anisotropy was determined by applying the law of approach to saturation, and it increased with the increase of the ion bombardment angle. The introduction of effective magnetic anisotropy will reduce the permeability and increase the relaxation frequency. Excellent high-frequency magnetic properties can be obtained by selecting suitable ion bombardment parameters.

Proton microprobe analysis of pancreatic. beta. cells

Energy Technology Data Exchange (ETDEWEB)

Lindh, U [Uppsala Univ. (Sweden). Gustaf Werner Inst.; Juntti-Berggren, L; Berggren, P O; Hellman, B [Uppsala Univ. (Sweden)

1985-01-01

Freeze-dried pancreas sections from obese hyperglycemic mice were subjected to proton bombardment and the elemental contents in the ..beta.. cells and the exocrine part were obtained from the characteristic X-rays emitted. Quantitative data were provided for 18 different elements. The mole ratio between K and Na exceeded 10, implying that neither the sample preparation nor the irradiation had induced significant diffuse changes. With the demonstration of this high K/Na ratio it seems likely that also the ..beta.. cells are equipped with an efficient Na/sup +//K/sup +/ pump. The ..beta.. cells contained about 70 mmoles Cl per litre cell water. Observed amounts of Ca and Mg were equivalent to those previously recorded by electrothermal atomic absorption spectroscopy. The significant role of Zn for the storage of insulin was emphasized by the demonstration of 3 times as much of this element in the ..beta.. cells as compared with the exocrine pancreas. In addition, the sensitivity of the proton microprobe enabled measurements of various trace elements such as Rb, Cr, Cu, Al and Pb not previously demonstrated in the pancreatic ..beta.. cells.

Silicon nanodot formation and self-ordering under bombardment with heavy Bi3 ions

International Nuclear Information System (INIS)

Boettger, Roman; Heinig, Karl-Heinz; Bischoff, Lothar; Liedke, Bartosz; Huebner, Rene; Pilz, Wolfgang

2013-01-01

Si nanodots of high density and hexagonal short-range order are observed upon normal-incidence bombardment of hot, crystalline Si with Bi 3 + ions having a kinetic energy of a few tens of keV. The heights of nanodots are comparable to their widths of ∝20 nm. The implanted Bi accumulates in tiny Bi nanocrystals in a thin Si top layer which is amorphous due to implantation damage. Light and heavy ions up to Xe cause smoothing of surfaces, but Bi 3 + ions considered here have a much higher mass. Atomistic simulations prove that each Bi 3 + impact deposits an extremely high energy density resulting in a several nanometer large melt pool, which resolidifies within a few hundreds of picoseconds. Experiments confirm that dot patterns form only if the deposited energy density exceeds the threshold for melting. Comparing monatomic and polyatomic Bi ion irradiation, Bi-Si phase separation and preferential ion erosion are ruled out as driving forces of pattern formation. A model based on capillary forces in the melt pool explains the pattern formation consistently. High-density Si nanodots are formed by polyatomic Bi ion irradiation of hot Si surfaces. Each impact causes local transient melt pools smaller than the dots. Hexagonally ordered patterns evolve by self-organization driven by repeated ion-induced melting of tiny volumes. Homogeneously distributed Bi nanocrystals are found in the a-Si film. These nanocrystals are related to particularities of the Si-Bi phase diagram. (copyright 2013 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Calibration of the proton detector used for the neutron life time experiment τSPECT

Energy Technology Data Exchange (ETDEWEB)

Ross, Kim; Haack, Jan; Heil, Werner; Karch, Jan [Johannes Gutenberg-Universitaet Mainz (Germany); Beck, Marcus [Johannes Gutenberg-Universitaet Mainz (Germany); Helmholtz-Institut Mainz (Germany)

2016-07-01

In order to measure the lifetime of free neutrons, a decay curve will be measured by detecting the decay products proton and electron. Their energies range up to 750 eV (protons) respectively 780 keV (electrons). The protons are accelerated onto 15 keV, in order to pass the dead layer of the detector and to be distinguishable from electronic noise. For the measurement a silicon drift detector is used which needs to be calibrated. This is achieved with a {sup 133}Ba source mounted on three source holders of different materials in a vacuum chamber. Thus not only four of the characteristic lines of the {sup 133}Ba source were measured but also the characteristic lines of the three source holders which yield four more calibration lines in the area of the proton energy in the spectrum. We report the implementation and results of the calibration of the silicon drift detector used for the neutron lifetime measurement τSPECT.

Regional-Scale Surface Magnetic Fields and Proton Fluxes to Mercury's Surface from Proton-Reflection Magnetometry

Science.gov (United States)

Winslow, R. M.; Johnson, C. L.; Anderson, B. J.; Gershman, D. J.; Raines, J. M.; Lillis, R. J.; Korth, H.; Slavin, J. A.; Solomon, S. C.; Zurbuchen, T.

2014-12-01

The application of a recently developed proton-reflection magnetometry technique to MESSENGER spacecraft observations at Mercury has yielded two significant findings. First, loss-cone observations directly confirm particle precipitation to Mercury's surface and indicate that solar wind plasma persistently bombards the planet not only in the magnetic cusp regions but over a large fraction of the southern hemisphere. Second, the inferred surface field strengths independently confirm the north-south asymmetry in Mercury's global magnetic field structure first documented from observations of magnetic equator crossings. Here we extend this work with 1.5 additional years of observations (i.e., to 2.5 years in all) to further probe Mercury's surface magnetic field and better resolve proton flux precipitation to the planet's surface. We map regions where proton loss cones are observed; these maps indicate regions where protons precipitate directly onto the surface. The augmentation of our data set over that used in our original study allows us to examine the proton loss cones in cells of dimension 10° latitude by 20° longitude in Mercury body-fixed coordinates. We observe a transition from double-sided to single-sided loss cones in the pitch-angle distributions; this transition marks the boundary between open and closed field lines. At the surface this boundary lies between 60° and 70°N. Our observations allow the estimation of surface magnetic field strengths in the northern cusp region and the calculation of incident proton fluxes to both hemispheres. In the northern cusp, our regional-scale observations are consistent with an offset dipole field and a dipole moment of 190 nT RM3, where RM is Mercury's radius, implying that any regional-scale variations in surface magnetic field strengths are either weak relative to the dipole field or occur at length scales smaller than the resolution of our observations (~300 km). From the global proton flux map (north of 40° S

Modeling the electron-proton telescope on Solar Orbiter

Energy Technology Data Exchange (ETDEWEB)

Boden, Sebastian; Steinhagen, Jan; Kulkarni, S.R.; Tammen, Jan; Elftmann, Robert; Martin, Cesar; Ravanbakhsh, Ali; Boettcher, Stephan; Seimetz, Lars; Wimmer-Schweingruber, Robert F. [Christian-Albrechts-Universitaet, Kiel (Germany)

2014-07-01

The Electron Proton Telescope (EPT) is one of four sensors in the Energetic Particle Detector suite for Solar Orbiter. It investigates low energy electrons and protons of solar events in an energy range from 20 - 400 keV for electrons and 20 keV - 7 MeV for protons. It distinguishes electrons from protons using a magnet/foil technique with silicon detectors. There will be two EPT units, each with double-barreled telescopes, one looking sunwards/antisunwards and the other north/south. We set up a Monte Carlo model of EPT using the GEANT4 framework, which we can use to simulate interactions of energetic particles in the sensor. Here we present simulation results of the energy coverage for different ion species, and we study how it is possible to distinguish between them.

ANALYTICAL MODELING OF ELECTRON BACK-BOMBARDMENT INDUCED CURRENT INCREASE IN UN-GATED THERMIONIC CATHODE RF GUNS

Energy Technology Data Exchange (ETDEWEB)

Edelen, J. P. [Fermilab; Sun, Y. [Argonne; Harris, J. R. [AFRL, NM; Lewellen, J. W. [Los Alamos Natl. Lab.

2016-09-28

In this paper we derive analytical expressions for the output current of an un-gated thermionic cathode RF gun in the presence of back-bombardment heating. We provide a brief overview of back-bombardment theory and discuss comparisons between the analytical back-bombardment predictions and simulation models. We then derive an expression for the output current as a function of the RF repetition rate and discuss relationships between back-bombardment, fieldenhancement, and output current. We discuss in detail the relevant approximations and then provide predictions about how the output current should vary as a function of repetition rate for some given system configurations.

Facility for the measurement of proton polarization in the range 50-70 MeV

Energy Technology Data Exchange (ETDEWEB)

Nakamura, M; Sakaguchi, H; Sakamoto, H; Ogawa, H; Cynshi, O; Kobayashi, S [Kyoto Univ. (Japan). Dept. of Physics; Kato, S [Osaka Univ., Toyonaka (Japan). Lab. of Nuclear Studies; Matsuoka, N; Hatanaka, K; Noro, T [Osaka Univ., Toyonaka (Japan). Research Center for Nuclear Physics

1983-07-01

A proton polarimetry facility based on silicon analyzers combined with high-purity germanium detectors is described. The scattering efficiency is 1.5 x 10/sup -5/ at 60 MeV with an effective analyzing power of 0.71 and the energy resolution is about 300 keV fwhm. The facility has succeeded in measuring the depolarization in p-/sup 13/C elastic scattering separated clearly from inelastic events. In order to use a silicon detector as an analyzer target, measurements of cross sections and analyzing powers have been performed at proton energies of 65, 60, 55, 50 and 45 MeV.

Comparison of calculated and experimental values of the yields of xenon isotopes in reactions with high-energy protons

International Nuclear Information System (INIS)

Shukolyukov, A.Yu.; Katargin, N.V.; Baishev, I.S.

1989-01-01

Calculations of the cumulative yields of isotopes of Xe have been carried out on the basis of the semi-empirical formula of Silverberg and Tsao for Ba- and Dy-targets and bombarding proton energies in the range 100-1050 MeV. Results are compared with experimental data for the yields of Xe isotopes, and domains of applicability of the semi-empirical formula are determined

Silicon-CsI detector array for heavy-ion reactions

CERN Document Server

Norbeck, E; Pogodin, P I; Cheng, Y W; Ingram, F D; Bjarki, O; Grévy, S; Magestro, D J; Molen, A M V; Westfall, G D

2000-01-01

An array of 60 silicon-CsI(Tl) detector telescopes has been developed along with associated electronics. The close packing of the telescopes required novel designs for the photodiodes and the silicon DELTA E detectors. Newly developed electronics include preamplifiers, shaping amplifiers, test pulse circuitry, and a module to monitor leakage currents in the silicon diodes. The array covers angles from 5 deg. to 18 deg. in the 4 pi Array at the National Superconducting Cyclotron Laboratory at Michigan State University. It measures protons to 150 MeV and has isotopic resolution for intermediate mass nuclei.

Fe embedded in ice: The impacts of sublimation and energetic particle bombardment

Science.gov (United States)

Frankland, Victoria L.; Plane, John M. C.

2015-05-01

Icy particles containing a variety of Fe compounds are present in the upper atmospheres of planets such as the Earth and Saturn. In order to explore the role of ice sublimation and energetic ion bombardment in releasing Fe species into the gas phase, Fe-dosed ice films were prepared under UHV conditions in the laboratory. Temperature-programmed desorption studies of Fe/H2O films revealed that no Fe atoms or Fe-containing species co-desorbed along with the H2O molecules. This implies that when noctilucent ice cloud particles sublimate in the terrestrial mesosphere, the metallic species embedded in them will coalesce to form residual particles. Sputtering of the Fe-ice films by energetic Ar+ ions was shown to be an efficient mechanism for releasing Fe into the gas phase, with a yield of 0.08 (Ar+ energy=600 eV). Extrapolating with a semi-empirical sputtering model to the conditions of a proton aurora indicates that sputtering by energetic protons (>100 keV) should also be efficient. However, the proton flux in even an intense aurora will be too low for the resulting injection of Fe species into the gas phase to compete with that from meteoric ablation. In contrast, sputtering of the icy particles in the main rings of Saturn by energetic O+ ions may be the source of recently observed Fe+ in the Saturnian magnetosphere. Electron sputtering (9.5 keV) produced no detectable Fe atoms or Fe-containing species. Finally, it was observed that Fe(OH)2 was produced when Fe was dosed onto an ice film at 140 K (but not at 95 K). Electronic structure theory shows that the reaction which forms this hydroxide from adsorbed Fe has a large barrier of about 0.7 eV, from which we conclude that the reaction requires both translationally hot Fe atoms and mobile H2O molecules on the ice surface.

Ion bombardment damage in a modified Fe-9Cr-1Mo steel

International Nuclear Information System (INIS)

Farrell, K.; Lee, E.H.

1984-01-01

A normalized-and-tempered Fe-9Cr-1Mo steel, with small Nb and V additions, was bombarded with 4-MeV iron ions to 100 dpa at 400, 450, 500, 550, and 600 0 C. Major damage feature was dislocation tangles which coarsened with increasing bombardment temperature. Sparse cavities were heterogeneously distributed at 500 and 550 0 C. Incorporation of helium and deuterium simultaneously in the bombardments at rates of 10 and 45 appM/dpa, respectively, introduced very high concentrations of small cavities at all temperatures, many of them on grain boundaries. These cavities were shown to be promoted by helium. A small fraction of the matrix cavities exhibited bias-driven growth at 500 and 550 0 C, with swelling 0 C higher than the peak swelling temperature found in neutron irradiations, which is compatible with the higher damage rate used in the ion bombardments. High concentrations of subgrain boundaries and dislocations resulting from the heat treatment, and unbalanced cavity and dislocation sink strengths in the damage structures contribute to the swelling resistance. Such resistance may not be permanent. High densities of bubbles on grain boundaries indicate a need for helium embrittlement tests

90 deg.Neutron emission from high energy protons and lead ions on a thin lead target

CERN Document Server

Agosteo, S; Foglio-Para, A; Mitaroff, W A; Silari, Marco; Ulrici, L

2002-01-01

The neutron emission from a relatively thin lead target bombarded by beams of high energy protons/pions and lead ions was measured at CERN in one of the secondary beam lines of the Super Proton Synchrotron for radiation protection and shielding calculations. Measurements were performed with three different beams: sup 2 sup 0 sup 8 Pb sup 8 sup 2 sup + lead ions at 40 GeV/c per nucleon and 158 GeV/c per nucleon, and 40 GeV/c mixed protons/pions. The neutron yield and spectral fluence per incident ion on target were measured at 90 deg.with respect to beam direction. Monte-Carlo simulations with the FLUKA code were performed for the case of protons and pions and the results found in good agreement with the experimental data. A comparison between simulations and experiment for protons, pions and lead ions have shown that--for such high energy heavy ion beams--a reasonable estimate can be carried out by scaling the result of a Monte-Carlo calculation for protons by the projectile mass number to the power of 0.80-0...

Hydrogen pumping and release by graphite under high flux plasma bombardment

International Nuclear Information System (INIS)

Hirooka, Y.; Leung, W.K.; Conn, R.W.; Goebel, D.M.; LaBombard, B.; Nygren, R.; Wilson, K.L.

1988-01-01

Inert gas (helium or argon) plasma bombardment has been found to increase the surface gas adsorptivity of isotropic graphite (POCO-graphite), which can then getter residual gases in a high vacuum system. The inert gas plasma bombardment was carried out at a flux ≅ 1 x 10 18 ions s -1 cm -2 to a fluence of the order of 10 21 ions/cm 2 and at temperatures around 800 0 C. The gettering capability of graphite can be easily recovered by repeating inert gas plasma bombardment. The activated graphite surface exhibits a smooth, sponge-like morphology with significantly increased pore openings, which correlates with the observed increase in the surface gas adsorptivity. The activated graphite surface has been observed to pump hydrogen plasma particles as well. From calibrated H-alpha measurements, the dynamic hydrogen retention capacity is evaluated to be as large as 2 x 10 18 H/cm 2 at temperatures below 100 0 C and at a plasma bombarding energy of 300 eV. The graphite temperature was varied between 15 and 480 0 C. Due to the plasma particle pumping capability, hydrogen recycling from the activated graphite surface is significantly reduced, relative to that from a pre-saturated surface. A pre-saturated surface was also observed to reproducibly pump a hydrogen plasma to a concentration of 9.5 x 10 17 H/cm 2 . The hydrogen retention capacity of graphite is found to decrease with increasing temperature. A transient pumping mechanism associated with the sponge-like surface morphology is conjectured to explain the large hydrogen retention capacity. Hydrogen release behavior under helium and argon plasma bombardment was also investigated, and the result indicated the possibility of some in-pore retrapping effect. 43 refs., 11 figs

Resonance proton scattering use for the beam parameters control of the electrostatic accelerator

Directory of Open Access Journals (Sweden)

V. I. Soroka

2013-12-01

Full Text Available The paper discusses peculiarities of the resonance proton scattering use for the beam parameters control of the electrostatic accelerators. The expediency of the use has been confirmed by experiment. Peculiarities are caused because elastic resonance scattering through the stage of compound nucleus is always accompanied by potential and Coulomb scattering. These three components interfere and for that reason the resonance form de-pends on a scattering angle and total angular moment of a compound nucleus level. However, possessing neces-sary information in the given field of nuclear spectroscopy enables the selection of resonance with the character-istics suitable for the calibration purpose. Considerable increase of the scattering cross section in the resonance region saves the time and simplifies the experiment technical maintenance. The experiments were performed at the 10 MeV tandem accelerator of the Institute for Nuclear Research, National Academy of Sciences of Ukraine, Kyiv, after its modernization. Silicon and oxygen were used as the targets. Silicon targets were of two types of thickness: 1 the target of complete absorption, 2 the target with the thickness in which the loss of protons ener-gy exceeded the width of the selected resonance. The elastic and non elastic scattering from silicon were used in region of the 3,100 MeV proton energy resonance. Oxygen target, as component of the surface oxidizing layer on beryllium had the thickness which in terms of the loss of proton energy was less than the width of the selected elastic narrow resonance at 3,470 MeV proton energy. As result of the measurement the corrections concerning the energy scale of the accelerator and protons energy spread in the beam were proposed.

Stable transformation via particle bombardment in two different soybean regeneration systems.

Science.gov (United States)

Sato, S; Newell, C; Kolacz, K; Tredo, L; Finer, J; Hinchee, M

1993-05-01

The Biolistics(®) particle delivery system for the transformation of soybean (Glycine max L. Merr.) was evaluated in two different regeneration systems. The first system was multiple shoot proliferation from shoot tips obtained from immature zygotic embryos of the cultivar Williams 82, and the second was somatic embryogenesis from a long term proliferative suspension culture of the cultivar Fayette. Bombardment of shoot tips with tungsten particles, coated with precipitated DNA containing the gene for β-glucuronidase (GUS), produced GUS-positive sectors in 30% of the regenerated shoots. However, none of the regenerants which developed into plants continued to produce GUS positive tissue. Bombardment of embryogenic suspension cultures produced GUS positive globular somatic embryos which proliferated into GUS positive somatic embryos and plants. An average of 4 independent transgenic lines were generated per bombarded flask of an embryogenic suspension. Particle bombardment delivered particles into the first two cell layers of either shoot tips or somatic embryos. Histological analysis indicated that shoot organogenesis appeared to involve more than the first two superficial cell layers of a shoot tip, while somatic embryo proliferation occurred from the first cell layer of existing somatic embryos. The different transformation results obtained with these two systems appeared to be directly related to differences in the cell types which were responsible for regeneration and their accessibility to particle penetration.

Hyperon production in proton-nucleus collisions at a center-of-mass energy of √(sNN) = 41.6 GeV at HERA-B and design of silicon microstrip detectors for tracking at LHCb

International Nuclear Information System (INIS)

Agari, Michaela

2006-01-01

The topics of this thesis are the measurements of hyperon production in protonnucleus collisions at √(s)=41.6 GeV with the Hera-B detector located at DESY, Hamburg (Germany), and the design of silicon microstrip sensors for the LHCb experiment at CERN, Geneva (Switzerland). Λ, Ξ and Ω hyperons and their antiparticles were reconstructed from 113.5 . 10 6 inelastic collisions of protons with fixed carbon, titanium and tungsten targets. With these samples, antiparticle-to-particle ratios, cross sections integrated for the accessible kinematic region of Hera-B and single differential cross sections as function of transverse momentum, dσ/dp T 2 (for Λ and Ξ) and rapidity, dσ/dy (for Λ only), have been been measured as well as the dependence of these quantities on the atomic number of the target nucleus, as parameterized using the Glauber model. The obtained ratios follow the same trend as found for the energy dependence of measurements from nucleus-nucleus collisions. Silicon microstrip sensors have been designed for the tracking system of the LHCb detector. Evaluating the performance in beam tests at CERN, the strip geometry and sensor thickness were varied optimizing for a large signal-to-noise ratio, a small number of read-out channels and a low occupancy. The detector is currently being built to be operational for first proton-proton collisions in autumn 2007. (orig.)

Crystalline silicon films grown by pulsed dc magnetron sputtering

Energy Technology Data Exchange (ETDEWEB)

Reinig, Peter; Fenske, Frank; Fuhs, Walther; Selle, Burkhardt [Hahn-Meitner-Institut Berlin, Abt. Silizium-Photovoltaik, Kekulestr. 5, D-12489 Berlin (Germany)

2002-04-01

Pulsed dc magnetron sputtering is used as a novel method for the deposition of crystalline silicon films on glass substrates. Hydrogen-free polycrystalline Si-films are deposited with high deposition rates at temperatures of 400-450 C and pulse frequencies f in the range 0-250 kHz. Strong preferential (100) orientation of the crystallites is observed with increasing f. High frequency and similarly high negative substrate bias cause an increase of the Ar content and an enhancement of structural disorder. Measurements of the transient floating potential suggest that the observed structural effects are related to bombardment of the growing film by Ar{sup +} ions of high energy.

Macroscopic results for a novel oxygenated silicon material

International Nuclear Information System (INIS)

Watts, S.J.; Da Via', C.; Karpenko, A.

2002-01-01

High-resistivity FZ silicon diodes have been processed in order to increase their oxygen dimer (O 2i ) concentration. Deep level transient spectroscopy measurements have been performed after proton irradiation showing that the formation of the VO centre is suppressed. The substrates had a starting resistivity of 2-4 kΩ cm, with an oxygen concentration of 10 15 and 10 17 cm -3 . Results for doping changes, leakage current and annealing behaviour after irradiation with 24 GeV/c protons are shown

Polymorphous silicon thin films produced in dusty plasmas: application to solar cells

International Nuclear Information System (INIS)

Roca i Cabarrocas, Pere; Chaabane, N; Kharchenko, A V; Tchakarov, S

2004-01-01

We summarize our current understanding of the optimization of PIN solar cells produced by plasma enhanced chemical vapour deposition from silane-hydrogen mixtures. To increase the deposition rate, the discharge is operated under plasma conditions close to powder formation, where silicon nanocrystals contribute to the deposition of so-called polymorphous silicon thin films. We show that the increase in deposition rate can be achieved via an accurate control of the plasma parameters. However, this also results in a highly defective interface in the solar cells due to the bombardment of the P-layer by positively charged nanocrystals during the deposition of the I-layer. We show that decreasing the ion energy by increasing the total pressure or by using silane-helium mixtures allows us to increase both the deposition rate and the solar cells efficiency, as required for cost effective thin film photovoltaics

Analysis of Proton Radiation Effects on Gallium Nitride High Electron Mobility Transistors

Science.gov (United States)

2017-03-01

non - ionizing proton radiation damage effects at different energy levels on a GaN-on-silicon high electron mobility transistor...DISTRIBUTION CODE 13. ABSTRACT (maximum 200 words) In this work, a physics-based simulation of non - ionizing proton radiation damage effects at different...Polarization . . . . . . . . . . . . . . 6 2.3 Non - Ionizing Radiation Damage Effects . . . . . . . . . . . . . . . 10 2.4 Non - Ionizing Radiation Damage in

Medipix2 as a tool for proton beam characterization

Science.gov (United States)

Bisogni, M. G.; Cirrone, G. A. P.; Cuttone, G.; Del Guerra, A.; Lojacono, P.; Piliero, M. A.; Romano, F.; Rosso, V.; Sipala, V.; Stefanini, A.

2009-08-01

Proton therapy is a technique used to deliver a highly accurate and effective dose for the treatment of a variety of tumor diseases. The possibility to have an instrument able to give online information could reduce the time necessary to characterize the proton beam. To this aim we propose a detection system for online proton beam characterization based on the Medipix2 chip. Medipix2 is a detection system based on a single event counter read-out chip, bump-bonded to silicon pixel detector. The read-out chip is a matrix of 256×256 cells, 55×55 μm 2 each. To demonstrate the capabilities of Medipix2 as a proton detector, we have used a 62 MeV flux proton beam at the CATANA beam line of the LNS-INFN laboratory. The measurements performed confirmed the good imaging performances of the Medipix2 system also for the characterization of proton beams.

Medipix2 as a tool for proton beam characterization

Energy Technology Data Exchange (ETDEWEB)

Bisogni, M.G. [Department of Physics, University of Pisa and INFN Sezione di Pisa, Pisa (Italy); Cirrone, G.A.P.; Cuttone, G. [INFN Laboratori Nazionali del Sud, Catania (Italy); Del Guerra, A. [Department of Physics, University of Pisa and INFN Sezione di Pisa, Pisa (Italy); Lojacono, P. [INFN Laboratori Nazionali del Sud, Catania (Italy); Piliero, M.A. [Department of Physics, University of Pisa and INFN Sezione di Pisa, Pisa (Italy); Romano, F. [INFN Laboratori Nazionali del Sud, Catania (Italy); Rosso, V. [Department of Physics, University of Pisa and INFN Sezione di Pisa, Pisa (Italy)], E-mail: valeria.rosso@pi.infn.it; Sipala, V. [Department of Physics and Astronomy, University of Catania and INFN Sezione di Catania, Catania (Italy); Stefanini, A. [Department of Physics, University of Pisa and INFN Sezione di Pisa, Pisa (Italy)

2009-08-01

Proton therapy is a technique used to deliver a highly accurate and effective dose for the treatment of a variety of tumor diseases. The possibility to have an instrument able to give online information could reduce the time necessary to characterize the proton beam. To this aim we propose a detection system for online proton beam characterization based on the Medipix2 chip. Medipix2 is a detection system based on a single event counter read-out chip, bump-bonded to silicon pixel detector. The read-out chip is a matrix of 256x256 cells, 55x55 {mu}m{sup 2} each. To demonstrate the capabilities of Medipix2 as a proton detector, we have used a 62 MeV flux proton beam at the CATANA beam line of the LNS-INFN laboratory. The measurements performed confirmed the good imaging performances of the Medipix2 system also for the characterization of proton beams.

Medipix2 as a tool for proton beam characterization

International Nuclear Information System (INIS)

Bisogni, M.G.; Cirrone, G.A.P.; Cuttone, G.; Del Guerra, A.; Lojacono, P.; Piliero, M.A.; Romano, F.; Rosso, V.; Sipala, V.; Stefanini, A.

2009-01-01

Proton therapy is a technique used to deliver a highly accurate and effective dose for the treatment of a variety of tumor diseases. The possibility to have an instrument able to give online information could reduce the time necessary to characterize the proton beam. To this aim we propose a detection system for online proton beam characterization based on the Medipix2 chip. Medipix2 is a detection system based on a single event counter read-out chip, bump-bonded to silicon pixel detector. The read-out chip is a matrix of 256x256 cells, 55x55 μm 2 each. To demonstrate the capabilities of Medipix2 as a proton detector, we have used a 62 MeV flux proton beam at the CATANA beam line of the LNS-INFN laboratory. The measurements performed confirmed the good imaging performances of the Medipix2 system also for the characterization of proton beams.

Direct evidence for a thermal effect of Ar+ ion bombardment in a conventional sputtering mode

International Nuclear Information System (INIS)

Okuyama, F.; Fujimoto, Y.

1986-01-01

Evidence is presented that the Ar + ion bombardment for sputtering in Auger electron spectroscopy can heat the target up to 2000 0 C if the target has poor heat conduction. Polycrystalline microneedles of Cr exhibited spherical tips after being exposed to 3 keV Ar + ions, proving that the needle tips were melted by impacting Ar + ions. Microneedles of Mo ion bombarded under the same condition were bent plastically, which perhaps reflects the thermal annealing of the needles during ion bombardment

Miniature electron bombardment evaporation source: evaporation rate measurement

International Nuclear Information System (INIS)

Nehasil, V.; Masek, K.; Matolin, V.; Moreau, O.

1997-01-01

Miniature electron beam evaporation sources which operate on the principle of vaporization of source material, in the form of a tip, by electron bombardment are produced by several companies specialized in UHV equipment. These sources are used primarily for materials that are normally difficult to deposit due to their high evaporation temperature. They are appropriate for special applications such as heteroepitaxial thin film growth requiring a very low and well controlled deposition rate. A simple and easily applicable method of evaporation rate control is proposed. The method is based on the measurement of ion current produced by electron bombardment of evaporated atoms. The absolute evaporation flux values were measured by means of the Bayard-Alpert ion gauge, which enabled the ion current vs evaporation flux calibration curves to be plotted. (author). 1 tab., 4 figs., 6 refs

Studies on the preparation of thallium-201 by irradiating mercury with protons using extraction chromatography technique to separate thallium from mercury

International Nuclear Information System (INIS)

Fernandes, L.

1990-01-01

Radionuclide sup(201)Tl is used in Nuclear Medicine to identify myocardial ischemia or myocardial infarct. It is a cyclotron-produced radioisotope, obtained indirectly from the decay of sup(202)Pb or directly by irradiating mercury with deuterons or protons. The usual technique to prepare sup(201)Tl makes use of the nuclear reaction: sup(203)(p,3n) → sup(201)Tl, which requires proton energy of around 28 MeV. Due to the limited proton energy of IPEN'S CV-28 cyclotron, studies on the irradiating conditions of natural mercury oxide pellets and drops of natural mercury metal were made in the range of 19 - 24 MeV. At the end of the bombardment of a 6 MeV thickness target of natural mercury metal with 19 MeV protons around 10 MBq sup(201)Tl/μ A h was obtained. (author)

Measurements of activation reaction rate distributions on a mercury target bombarded with high-energy protons at AGS

International Nuclear Information System (INIS)

Takada, Hiroshi; Kasugai, Yoshimi; Nakashima, Hiroshi; Ikeda, Yujiro; Jerde, Eric; Glasgow, David

2000-02-01

A neutronics experiment was carried out using a thick mercury target at the Alternating Gradient Synchrotron (AGS) facility of Brookhaven National Laboratory in a framework of the ASTE (AGS Spallation Target Experiment) collaboration. Reaction rate distributions around the target were measured by the activation technique at incident proton energies of 1.6, 12 and 24 GeV. Various activation detectors such as the 115 In(n,n') 115m In, 93 Nb(n,2n) 92m Nb, and 209 Bi(n,xn) reactions with threshold energies ranging from 0.3 to 70.5 MeV were employed to obtain the reaction rate data for estimating spallation source neutron characteristics of the mercury target. It was found from the measured 115 In(n,n') 115m In reaction rate distribution that the number of leakage neutrons becomes maximum at about 11 cm from the top of hemisphere of the mercury target for the 1.6-GeV proton incidence and the peak position moves towards forward direction with increase of the incident proton energy. The similar result was observed in the reaction rate distributions of other activation detectors. The experimental procedures and a full set of experimental data in numerical form are summarized in this report. (author)

Proton-Induced X-Ray Emission Analysis of Crematorium Emissions

Science.gov (United States)

Ali, Salina; Nadareski, Benjamin; Yoskowitz, Joshua; Labrake, Scott; Vineyard, Michael

2014-09-01

There has been considerable debate in recent years about possible mercury emissions from crematoria due to amalgam tooth restorations. We have performed a proton-induced X-ray emission (PIXE) analysis of aerosol and soil samples taken near the Vale Cemetery Crematorium in Schenectady, NY, to address this concern. The aerosol samples were collected on the roof of the crematorium using a nine-stage, cascade impactor that separates the particulate matter by aerodynamic diameter and deposits it onto thin Kapton foils. The soil samples were collected at several different distances from the crematorium and compressed into pellets with a hydraulic press. The Kapton foils containing the aerosol samples and the soil pellets were bombarded with 2.2-MeV protons from the 1.1-MV tandem Pelletron accelerator in the Union College Ion-Beam Analysis Laboratory. We measured significant concentrations of sulfur, phosphorus, potassium, calcium, and iron, but essentially no mercury in the aerosol samples. The lower limit of detection for airborne mercury in this experiment was approximately 0.2 ng / m3. The PIXE analysis of the soil samples showed the presence of elements commonly found in soil (Si, K, Ca, Ti, Mn, Fe), but no trace of mercury. There has been considerable debate in recent years about possible mercury emissions from crematoria due to amalgam tooth restorations. We have performed a proton-induced X-ray emission (PIXE) analysis of aerosol and soil samples taken near the Vale Cemetery Crematorium in Schenectady, NY, to address this concern. The aerosol samples were collected on the roof of the crematorium using a nine-stage, cascade impactor that separates the particulate matter by aerodynamic diameter and deposits it onto thin Kapton foils. The soil samples were collected at several different distances from the crematorium and compressed into pellets with a hydraulic press. The Kapton foils containing the aerosol samples and the soil pellets were bombarded with 2.2-Me

Differential production cross sections for charged particles produced by 590 MeV proton bombardment of thin metal targets

International Nuclear Information System (INIS)

Howe, S.D.; Cierjacks, S.; Hino, Y.; Raupp, F.; Rainbow, M.T.; Swinhoe, M.T.; Buth, L.

1981-01-01

Differential production cross sections have been measured for the reactions (p,p), (p,d), (p,t) and (p,π+-) using the 590 MeV proton beam at SIN. Here we report measurements made on thin targets of aluminium, niobium, lead, and uranium at laboratory angles of 90 0 and 157 0 . The data were taken over a proton energy range of about 50 MeV to 590 MeV. Differential cross sections are reported along with predictions by the intranuclear-cascade/evaporation model as computed by HETC. (orig.)

Systematic characterization and quality assurance of silicon micro-strip sensors for the Silicon Tracking System of the CBM experiment

Science.gov (United States)

Ghosh, P.

2014-07-01

The Silicon Tracking System (STS) is the central detector of the Compressed Baryonic Matter (CBM) experiment at future Facility for Anti-proton and Ion Research (FAIR) at Darmstadt. The task of the STS is to reconstruct trajectories of charged particles originating at relatively high multiplicities from the high rate beam-target interactions. The tracker comprises of 300 μm thick silicon double-sided micro-strip sensors. These sensors should be radiation hard in order to reconstruct charged particles up to a maximum radiation dose of 1 × 1014neqcm-2. Systematic characterization allows us to investigate the sensor response and perform quality assurance (QA) tests. In this paper, systematic characterization of prototype double-sided silicon micro-strip sensors will be discussed. This procedure includes visual, passive electrical, and radiation hardness test. Presented results include tests on three different prototypes of silicon micro-strip sensors.

Systematic characterization and quality assurance of silicon micro-strip sensors for the Silicon Tracking System of the CBM experiment

International Nuclear Information System (INIS)

Ghosh, P

2014-01-01

The Silicon Tracking System (STS) is the central detector of the Compressed Baryonic Matter (CBM) experiment at future Facility for Anti-proton and Ion Research (FAIR) at Darmstadt. The task of the STS is to reconstruct trajectories of charged particles originating at relatively high multiplicities from the high rate beam-target interactions. The tracker comprises of 300 μm thick silicon double-sided micro-strip sensors. These sensors should be radiation hard in order to reconstruct charged particles up to a maximum radiation dose of 1 × 10 14 n eq cm −2 . Systematic characterization allows us to investigate the sensor response and perform quality assurance (QA) tests. In this paper, systematic characterization of prototype double-sided silicon micro-strip sensors will be discussed. This procedure includes visual, passive electrical, and radiation hardness test. Presented results include tests on three different prototypes of silicon micro-strip sensors

The role of non-elastic nuclear processes for intermediate-energy protons in silicon targets

International Nuclear Information System (INIS)

Hormaza, Joel Mesa; Garcia, Cesar E.; Arruda Neto, Joao D.T.; Rodrigues, Tulio E.; Paschuck, Sergei A.; Evseev, Ivan

2013-01-01

The transportation of energetic ions in bulk matter is of direct interest in several areas including shielding against ions originating from either space radiations or terrestrial accelerators, cosmic ray propagation studies in galactic medium, or radiobiological effects resulting from the work place or clinical exposures. For carcinogenesis, terrestrial radiation therapy, and radiobiological research, knowledge of beam composition and interactions is necessary to properly evaluate the effects on human and animal tissues. For the proper assessment of radiation exposures both reliable transport codes and accurate input parameters are needed. In the last years efforts have been increasing in order to develop more effective models to describe and predict the damages induced by radiation in electronic devices. In this sense, the interaction of protons with those devices, particularly which operate in space, is a topic of paramount importance, mainly because although the majority of them are made with silicon, experimental data on p+Si nuclear processes is very sparse. In this work we have used a new quite sophisticated Monte Carlo multicollisional intranuclear cascade (MCMC) code for pre-equilibrium emission, plus de-excitation of residual nucleus by two ways: evaporation of particles (mainly nucleons, but also composites) and possibly fragmentation/fission in the case of heavy residues, in order to study some observable of nuclear interaction of protons between 100-200 MeV in a 28 Si target. The code has been developed with very recent improvements that take into account Pauli blocking effects in a novel and more precise way, as well as a more rigorous energy balance, an energy stopping time criterion for pre-equilibrium emission and the inclusion of deuteron, triton and 3He emissions in the evaporation step, which eventually concurs with fragmentation/break-up stage. The fragment mass distributions, as well as the multiplicities and the spectra of secondary particles

The role of non-elastic nuclear processes for intermediate-energy protons in silicon targets

Energy Technology Data Exchange (ETDEWEB)

Hormaza, Joel Mesa, E-mail: jmesa@ibb.unesp.br [Universidade Estadual Paulista Julio de Mesquita Filho (UNESP), Botucatu, SP (Brazil); Garcia, Cesar E., E-mail: cgarcia@instec.cu [Instituto Superior de Tecnologias y Ciencias Aplicadas (InSTEC), Havana (Cuba); Arruda Neto, Joao D.T.; Rodrigues, Tulio E., E-mail: arruda@if.usp.br, E-mail: tulio@if.usp.br [Universidade de Sao Paulo (USP), Sao Paulo, SP (Brazil). Instituto de Fisica; Schelin, Hugo R.; Denyak, Valery, E-mail: schelin@utfpr.edu.br, E-mail: denyak@gmail.com [Instituto de Pesquisa Pele Pequeno Principe, Curitiba, PR (Brazil); Paschuck, Sergei A.; Evseev, Ivan, E-mail: sergei@utfpr.edu.br, E-mail: evseev@utfpr.edu.br [Universidade Tecnologica Federal do Parana (UTFPR), Curitiba, PR (Brazil)

2013-07-01

The transportation of energetic ions in bulk matter is of direct interest in several areas including shielding against ions originating from either space radiations or terrestrial accelerators, cosmic ray propagation studies in galactic medium, or radiobiological effects resulting from the work place or clinical exposures. For carcinogenesis, terrestrial radiation therapy, and radiobiological research, knowledge of beam composition and interactions is necessary to properly evaluate the effects on human and animal tissues. For the proper assessment of radiation exposures both reliable transport codes and accurate input parameters are needed. In the last years efforts have been increasing in order to develop more effective models to describe and predict the damages induced by radiation in electronic devices. In this sense, the interaction of protons with those devices, particularly which operate in space, is a topic of paramount importance, mainly because although the majority of them are made with silicon, experimental data on p+Si nuclear processes is very sparse. In this work we have used a new quite sophisticated Monte Carlo multicollisional intranuclear cascade (MCMC) code for pre-equilibrium emission, plus de-excitation of residual nucleus by two ways: evaporation of particles (mainly nucleons, but also composites) and possibly fragmentation/fission in the case of heavy residues, in order to study some observable of nuclear interaction of protons between 100-200 MeV in a {sup 28}Si target. The code has been developed with very recent improvements that take into account Pauli blocking effects in a novel and more precise way, as well as a more rigorous energy balance, an energy stopping time criterion for pre-equilibrium emission and the inclusion of deuteron, triton and 3He emissions in the evaporation step, which eventually concurs with fragmentation/break-up stage. The fragment mass distributions, as well as the multiplicities and the spectra of secondary

Materials surface modification by plasma bombardment under simultaneous erosion and redeposition conditions

International Nuclear Information System (INIS)

Hirooka, Y.; Goebel, D.M.; Conn, R.W.

1986-07-01

The first in-depth investigation of surface modification of materials by continuous, high-flux argon plasma bombardment under simultaneous erosion and redeposition conditions have been carried out for copper and 304 stainless steel using the PISCES facility. The plasma bombardment conditions are: incident ion flux range from 10 17 to 10 19 ions sec -1 cm -2 , total ion fluence is controlled between 10 19 and 10 22 ions cm -2 , electron temperature range from 5 to 15 eV, and plasma density range from 10 11 to 10 13 cm -3 . The incident ion energy is 100 eV. The sample temperature is between 300 and 700K. Under redeposition dominated conditions, the material erosion rate due to the plasma bombardment is significantly smaller (by a factor up to 10) than that can be expected from the classical ion beam sputtering yield data. It is found that surface morphologies of redeposited materials strongly depend on the plasma bombardment condition. The effect of impurities on surface morphology is elucidated in detail. First-order modelings are implemented to interpret the reduced erosion rate and the surface evolution. Also, fusion related surface properties of redeposited materials such as hydrogen reemission and plasma driven permeation have been characterized

Effect of the ion bombardment on the apparent barrier height in GaAs Schottky junctions

International Nuclear Information System (INIS)

Horvath, Zs. J.

1994-01-01

The bombardment of the semiconductor with different particles often results in the change of the doping concentration at the semiconductor surface. In this paper the effects of this near-interface concentration change on the apparent and real Schottky barrier heights are discussed. Experimental results obtained in GaAs Schottky junctions prepared on ion-bombarded semiconductor surfaces are analysed, and it is shown that their electrical characteristics are strongly influenced by the near-interface concentration change due to the ion bombardment. (author). 36 refs., 2 figs

Comparative yields of alkali elements and thallium from uranium irradiated with GeV protons, $^{3}$He and $^{12}$C

CERN Document Server

Bjørnstad, T; Jonson, B; Jonsson, O C; Lindfors, V; Mattsson, S; Poskanzer, A M; Ravn, H L; Schardt, D

1981-01-01

Mass-separated ion beams of the alkali elements Na, K and Fr, and of the element Tl, are produced by bombarding a uranium target with 600 MeV protons, 890 MeV /sup 3/He/sup 2+/, and 936 MeV /sup 12/C/sup 4+/. Isotopic production yields are reported. In the case of the /sup 12/C beam, these are thick target yields. Absolute cross-sections for the proton beam data are deduced by normalizing the delay-time corrected yield curves to measured cross-sections. For products farthest away from stability, the /sup 3/He/sup 2+/ beam generally gives the highest yields. (17 refs).

Trace element analysis in liquids by proton induced x-ray emission

International Nuclear Information System (INIS)

Deconninck, G.

Proton induced x-ray emission (PIXE) from liquid has been developed for quantitative and simultaneous analysis of trace elements. Liquid drops and trickles are bombarded at atmospheric pressure, x-rays are detected in a non dispersive Si(Li) solid state detector. Absolute determinations are made by comparison with standard solutions. Detection limits in a 5 minutes run are in the ppm range for a single drop (0.05 ml). The application of this technique to the determination of trace elements in biological liquids is investigated (Cr, Mn, Fe, Co, Ni, Cu, Zn, in plant extracts, haemocyanine, albumins...). (author)

Development of pits and cones on ion bombarded copper

International Nuclear Information System (INIS)

Tanovic, L.A.; Carter, G.; Nobes, M.J.; Whitton, I.L.; Williams, J.S.

1980-01-01

The formation of pits and cones on Ar ion bombarded copper has been studied. Carefully polished surfaces of large grained 99.999% pure copper crystals have been bombarded at normal incidence with 40 keV argon ions. The cone formation has been investigated for annealed and non-annealed crystals at room temperature and at 30 K and in the case of monocrystal and polycrystal samples. Although in the most other studies the presence of impurities is as a necessary condition for generation of cones and pits the obtained experimental results show that under certain conditions these features are formed on clean surfaces. It is shown that the dominant parameter in the production of cones on copper is the crystal orientation [ru

A 1024 pad silicon detector to solve tracking ambiguities in high multiplicity events

International Nuclear Information System (INIS)

Simone, S.; Catanesi, M.G.; Di Bari, D.; Didonna, V.; Elia, D.; Ghidini, B.; Lenti, V.; Manzari, V.; Nappi, E.

1996-01-01

Silicon detectors with two-dimensional pad readout have been designed and constructed for the WA97 experiment at CERN, in order to solve ambiguities for track reconstruction in a silicon microstrip telescope. A high density fanouts has been developed on a glass support to allow the electrical contacts between the detector and the front end electronics. Silicon pad detectors have been successfully operated both during the proton-Pb and Pb-Pb runs of the WA97 experiment. (orig.)

Neutron field characterization and dosimetry at the TRIUMF proton therapy facility

International Nuclear Information System (INIS)

Mukherjee, B.

2002-01-01

Full text: In 1972 the 500 MeV H' Cyclotron of the TRIUMF (Tri University Meson Factory) located in Vancouver, Canada became operational. Beside Meson Physics, high-energy protons of various energy and beam current levels from the TRIUMF Cyclotron are used for scientific research and biomedical applications. Recently, a 500 MeV proton beam from the cyclotron was used as the booster beam for the radioactive ion beam facility, ISAC (Isotope Separator Accelerator) and a second beam as primary irradiation source for the Proton Irradiation Facility (PIF). The major commercial applications of the PIF are the provision of high-energy proton beams for radiation hardness testing of electronic components used in space applications (NASA) and proton therapy of ocular tumors (British Columbia Proton Therapy Facility). The PIF vault was constructed within the main accelerator hall of the TRIUMF using stacks of large concrete blocks. An intense field of fast neutrons is produced during the interaction of high-energy proton beam with target materials, such as, beam stops, collimators and beam energy degraders. The leakage of such neutrons due to insufficient radiological shielding or through the shielding discontinuities may constitute a major share of the personnel radiation exposure of the radiation workers. The neutron energy distribution and dose equivalent near a lead beam stopper bombarded with 116 MeV and 65 MeV collimated proton beams at the Ocular Tumor irradiation facility were evaluated using a Bonner-Sphere Spectrometer and a REM counter respectively. The results were utilized to investigate efficacy of the existing radiological shielding of the PIF. This paper highlights experimental methods to analyze the high-energy accelerator produced neutron beam and basic guideline for the radiological shielding designs of irradiation vault of Proton Therapy facilities

Diffusion processes in bombardment-induced surface topography

International Nuclear Information System (INIS)

Robinson, R.S.

1984-01-01

A treatment is given of the problem of surface diffusion processes occurring during surface topography development, whenever a surface is simultaneously seeded with impurities and ion bombarded. The development of controllable topography and the importance of surface diffusion parameters, which can be obtained during these studies, are also analyzed. 101 refs.; 7 figs.; 2 tabs

Energy Dependence of Proton Radiation Damage in Si-Sensors

CERN Document Server

AUTHOR|(CDS)2084399; Neubüser, C.

2014-01-01

Irradiation experiments on silicon sensors are used to mimic the radiation environment at collider experiments with the aim to forecast the change of the electrical properties of a detector with irradiation. Measurements on irradiated sensors are invaluable in choosing a material well suited for a silicon tracking detector. This is especially true for the upgraded detectors to be used in the high-luminosity phase of the LHC (HL-LHC), where silicon sensors as currently used would suffer severe loss in signal from irradiation with charged and neutral hadrons.\\\\ The CMS Tracker Collaboration has initiated irradiation studies with protons with energies ranging from 23 MeV to 23 GeV. They are often used instead of charged hadrons, their radiation induced damage to the silicon being rather similar. However, in oxygen rich silicon, NIEL violation concerning the full depletion voltage has been observed.\\\\ In this paper results from investigations on bulk defects compared to the change of the electrical properties of ...

Computer simulation of the topography evolution on ion bombarded surfaces

CERN Document Server

Zier, M

2003-01-01

The development of roughness on ion bombarded surfaces (facets, ripples) on single crystalline and amorphous homogeneous solids plays an important role for example in depth profiling techniques. To verify a faceting mechanism based not only on sputtering by directly impinging ions but also on the contribution of reflected ions and the redeposition of sputtered material a computer simulation has been carried out. The surface in this model is treated as a two-dimensional line segment profile. The model describes the topography evolution on ion bombarded surfaces including the growth mechanism of a facetted surface, using only the interplay of reflected and primary ions and redeposited atoms.

The influence of ion bombardment on emission properties of carbon materials

International Nuclear Information System (INIS)

Chepusov, Alexander; Komarskiy, Alexander; Kuznetsov, Vadim

2014-01-01

When electric-vacuum device works its cathode surface experiences bombardment with ions of residual gases. Effects of ion bombardment impact on surface of field emission cathodes made of carbon materials may essentially change emission properties of such cathodes. It changes emission start electric field strength, voltage vs. current characteristic of material, its relief and electron structure of the surface layer. Field emission cathode operating mode, variation of radiation doses allow to obtain both good effects: maximal electric current, surface recovery – and negative ones: the worst emission properties and surface destruction, amorphization.

The influence of ion bombardment on emission properties of carbon materials

Energy Technology Data Exchange (ETDEWEB)

Chepusov, Alexander, E-mail: chepusov@iep.uran.ru [The Institute of Electrophysics of the Ural Division of the Russian Academy of Sciences (IEP UD RAS), 620016, 106 Amundsen Street, Ekaterinburg (Russian Federation); Ural Federal University, 620002, 19 Mira Street, Ekaterinburg (Russian Federation); Komarskiy, Alexander, E-mail: aakomarskiy@gmail.com [The Institute of Electrophysics of the Ural Division of the Russian Academy of Sciences (IEP UD RAS), 620016, 106 Amundsen Street, Ekaterinburg (Russian Federation); Ural Federal University, 620002, 19 Mira Street, Ekaterinburg (Russian Federation); Kuznetsov, Vadim, E-mail: kuznetsov@iep.uran.ru [The Institute of Electrophysics of the Ural Division of the Russian Academy of Sciences (IEP UD RAS), 620016, 106 Amundsen Street, Ekaterinburg (Russian Federation)

2014-07-01

When electric-vacuum device works its cathode surface experiences bombardment with ions of residual gases. Effects of ion bombardment impact on surface of field emission cathodes made of carbon materials may essentially change emission properties of such cathodes. It changes emission start electric field strength, voltage vs. current characteristic of material, its relief and electron structure of the surface layer. Field emission cathode operating mode, variation of radiation doses allow to obtain both good effects: maximal electric current, surface recovery – and negative ones: the worst emission properties and surface destruction, amorphization.

Measurements of the ballistic-phonon component resulting from nuclear and electron recoils in crystalline silicon

International Nuclear Information System (INIS)

Lee, A.T.; Cabrera, B.; Dougherty, B.L.; Penn, M.J.; Pronko, J.G.; Tamura, S.

1996-01-01

We present measurements of the ballistic-phonon component resulting from nuclear and electron recoils in silicon at ∼380 mK. The detectors used for these experiments consist of a 300-μm-thick monocrystal of silicon instrumented with superconducting titanium transition-edge sensors. These sensors detect the initial wavefront of athermal phonons and give a pulse height that is sensitive to changes in surface-energy density resulting from the focusing of ballistic phonons. Nuclear recoils were generated by neutron bombardment of the detector. A Van de Graaff proton accelerator and a thick 7 Li target were used. Pulse-height spectra were compared for neutron, x-ray, and γ-ray events. A previous analysis of this data set found evidence for an increase in the ballistic-phonon component for nuclear recoils compared to electron recoils at a 95% confidence level. An improved understanding of the detector response has led to a change in the result. In the present analysis, the data are consistent with no increase at the 68% confidence level. This change stems from an increase in the uncertainty of the result rather than a significant change in the central value. The increase in ballistic phonon energy for nuclear recoils compared to electron recoils as a fraction of the total phonon energy (for equal total phonon energy events) was found to be 0.024 +0.041 -0.055 (68% confidence level). This result sets a limit of 11.6% (95% confidence level) on the ballistic phonon enhancement for nuclear recoils predicted by open-quote open-quote hot spot close-quote close-quote and electron-hole droplet models, which is the most stringent to date. To measure the ballistic-phonon component resulting from electron recoils, the pulse height as a function of event depth was compared to that of phonon simulations. (Abstract Truncated)

IV and CV curves for irradiated prototype BTeV silicon pixel sensors

International Nuclear Information System (INIS)

Coluccia, Maria R.

2002-01-01

The authors present IV and CV curves for irradiated prototype n + /n/p + silicon pixel sensors, intended for use in the BTeV experiment at Fermilab. They tested pixel sensors from various vendors and with two pixel isolation layouts: p-stop and p-spray. Results are based on exposure with 200 MeV protons up to 6 x 10 14 protons/cm 2

Surface wet-ability modification of thin PECVD silicon nitride layers by 40 keV argon ion treatments

Science.gov (United States)

Caridi, F.; Picciotto, A.; Vanzetti, L.; Iacob, E.; Scolaro, C.

2015-10-01

Measurements of wet-ability of liquid drops have been performed on a 30 nm silicon nitride (Si3N4) film deposited by a PECVD reactor on a silicon wafer and implanted by 40 keV argon ions at different doses. Surface treatments by using Ar ion beams have been employed to modify the wet-ability. The chemical composition of the first Si3N4 monolayer was investigated by means of X-ray Photoelectron Spectroscopy (XPS). The surface morphology was tested by Atomic Force Microscopy (AFM). Results put in evidence the best implantation conditions for silicon nitride to increase or to reduce the wet-ability of the biological liquid. This permits to improve the biocompatibility and functionality of Si3N4. In particular experimental results show that argon ion bombardment increases the contact angle, enhances the oxygen content and increases the surface roughness.

Elementary analysis of massive samples at excitation of characteristic x-radiation by proton beams

International Nuclear Information System (INIS)

Altynov, V.A.; Blokhin, S.M.; Brazevich, Eh.; Brazevich, Ya.; Lyu Zaj Ik; Osetinskij, G.M.; Purehv, A.

1982-01-01

A simplified method is described for calculating the elementary composition in the massive samples in the case of the detection of the characteristic X-radiation emitted under the bombardment of the samples by a beam of protons. The method was experimentally verified by measuring the characteristic X-radiation from the elements with a known concentration entering the one-component and multi-component matrix. It was shown that within the experimental accuracy the discussed method gave results analogous to those obtained with the earlier used methods

Si(LMM) Auger electron emission from Si alloys by keV Ar/sup +/ ion bombardment, new effect and application

Energy Technology Data Exchange (ETDEWEB)

Hiraki, A; Kim, S; Imura, T; Iwami, M [Osaka Univ., Suita (Japan). Faculty of Engineering

1979-09-01

Si(LMM) Auger spectra excited by keV ion bombardment were studied in Si alloyed with several elements (Au, Cu, Pd, Ni, C, and H). The spectra differed completely from those of pure Si. The main characteristics are (1) the spectra are composed of two well-separated peaks (88 and 92 eV) called the atomic-like peak (88 eV) and the bulk-like peak (92 eV); and (2) the atomic-like peak is enhanced with respect to the bulk-like peak, and this enhancement becomes more obvious as the concentration of partner elements of the alloys are increased. The possible application of the present phenomena is proposed as a technique for detecting the homogeneity of Si alloy films in the three-dimensional sense - as an example, the three-dimensional distribution of hydrogen in hydrogenated amorphous silicon (a-Si-H).

Measurements of activation reaction rate distributions on a mercury target bombarded with high-energy protons at AGS

Energy Technology Data Exchange (ETDEWEB)

Takada, Hiroshi; Kasugai, Yoshimi; Nakashima, Hiroshi; Ikeda, Yujiro [Japan Atomic Energy Research Inst., Tokai, Ibaraki (Japan). Tokai Research Establishment; Ino, Takashi; Kawai, Masayoshi [High Energy Accelerator Research Organization, Tsukuba, Ibaraki (Japan); Jerde, Eric; Glasgow, David [Oak Ridge National Laboratory, Oak Ridge, TN (United States)

2000-02-01

A neutronics experiment was carried out using a thick mercury target at the Alternating Gradient Synchrotron (AGS) facility of Brookhaven National Laboratory in a framework of the ASTE (AGS Spallation Target Experiment) collaboration. Reaction rate distributions around the target were measured by the activation technique at incident proton energies of 1.6, 12 and 24 GeV. Various activation detectors such as the {sup 115}In(n,n'){sup 115m}In, {sup 93}Nb(n,2n){sup 92m}Nb, and {sup 209}Bi(n,xn) reactions with threshold energies ranging from 0.3 to 70.5 MeV were employed to obtain the reaction rate data for estimating spallation source neutron characteristics of the mercury target. It was found from the measured {sup 115}In(n,n'){sup 115m}In reaction rate distribution that the number of leakage neutrons becomes maximum at about 11 cm from the top of hemisphere of the mercury target for the 1.6-GeV proton incidence and the peak position moves towards forward direction with increase of the incident proton energy. The similar result was observed in the reaction rate distributions of other activation detectors. The experimental procedures and a full set of experimental data in numerical form are summarized in this report. (author)

Particle-In-Cell/Monte Carlo Simulation of Ion Back Bombardment in Photoinjectors

International Nuclear Information System (INIS)

Qiang, Ji; Corlett, John; Staples, John

2009-01-01

In this paper, we report on studies of ion back bombardment in high average current dc and rf photoinjectors using a particle-in-cell/Monte Carlo method. Using H 2 ion as an example, we observed that the ion density and energy deposition on the photocathode in rf guns are order of magnitude lower than that in a dc gun. A higher rf frequency helps mitigate the ion back bombardment of the cathode in rf guns

Evidence Supporting an Early as Well as Late Heavy Bombardment on the Moon

Science.gov (United States)

Frey, Herbert

2015-01-01

Evidence supporting an intense early bombardment on the Moon in addition to the traditional Late Heavy Bombardment at approx. 4 BY ago include the distribution of N(50) Crater Retention Ages (CRAs) for candidate basins, a variety of absolute age scenarios for both a "young" and an "old" Nectaris age, and the decreasing contrasts in both topographic relief and Bouguer gravity with increasing CRA.

Low surface damage dry etched black silicon

Science.gov (United States)

Plakhotnyuk, Maksym M.; Gaudig, Maria; Davidsen, Rasmus Schmidt; Lindhard, Jonas Michael; Hirsch, Jens; Lausch, Dominik; Schmidt, Michael Stenbæk; Stamate, Eugen; Hansen, Ole

2017-10-01

Black silicon (bSi) is promising for integration into silicon solar cell fabrication flow due to its excellent light trapping and low reflectance, and a continuously improving passivation. However, intensive ion bombardment during the reactive ion etching used to fabricate bSi induces surface damage that causes significant recombination. Here, we present a process optimization strategy for bSi, where surface damage is reduced and surface passivation is improved while excellent light trapping and low reflectance are maintained. We demonstrate that reduction of the capacitively coupled plasma power, during reactive ion etching at non-cryogenic temperature (-20 °C), preserves the reflectivity below 1% and improves the effective minority carrier lifetime due to reduced ion energy. We investigate the effect of the etching process on the surface morphology, light trapping, reflectance, transmittance, and effective lifetime of bSi. Additional surface passivation using atomic layer deposition of Al2O3 significantly improves the effective lifetime. For n-type wafers, the lifetime reaches 12 ms for polished and 7.5 ms for bSi surfaces. For p-type wafers, the lifetime reaches 800 μs for both polished and bSi surfaces.

Energy loss distributions of 7 TeV protons channeled in a bent silicon crystals

Directory of Open Access Journals (Sweden)

Stojanov Nace

2013-01-01

Full Text Available The energy loss distributions of relativistic protons axially channeled through the bent Si crystals, with the constant curvature radius, R = 50 m, are studied here. The proton energy is 7 TeV and the thickness of the crystal is varied from 1 mm to 5 mm, which corresponds to the reduced crystal thickness, L, from 2.1 to 10.6, respectively. The proton energy was chosen in accordance with the large hadron collider project, at the European Organization for Nuclear Research, in Geneva, Switzerland. The energy loss distributions of the channeled protons were generated by the computer simulation method using the numerical solution of the proton equations of motion in the transverse plane. Dispersion of the proton scattering angle caused by its collisions with the crystal’s electrons was taken into account. [Projekat Ministarstva nauke Republike Srbije, br. III 45006

Macroscopic results for a novel oxygenated silicon material

CERN Document Server

Watts, S J; Karpenko, A

2002-01-01

High-resistivity FZ silicon diodes have been processed in order to increase their oxygen dimer (O sub 2 sub i) concentration. Deep level transient spectroscopy measurements have been performed after proton irradiation showing that the formation of the VO centre is suppressed. The substrates had a starting resistivity of 2-4 k OMEGA cm, with an oxygen concentration of 10 sup 1 sup 5 and 10 sup 1 sup 7 cm sup - sup 3. Results for doping changes, leakage current and annealing behaviour after irradiation with 24 GeV/c protons are shown.

Structural and magnetic properties of ion-beam bombarded Co/Pt multilayers

Energy Technology Data Exchange (ETDEWEB)

Lin, K.W.; Guo, J.Y.; Lin, S.R.; Ouyang, H. [Department of Materials Science and Engineering, National Chung Hsing University, Taichung 402 (China); Tsai, C.J. [Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 300 (China); Van Lierop, J. [Department of Physics and Astronomy, University of Manitoba, Winnipeg (Canada); Phuoc, N.N.; Suzuki, T. [Information Storage Materials Laboratory, Toyota Technological Institute, Nagoya 468-8511 (Japan)

2007-12-15

A series of [Pt(2 nm)/Co(2 nm)]{sub 10}/Pt(30 nm) multilayers were deposited by using an ion-beam technique. X-ray diffraction and transmission electron microscopy results have shown that as-deposited samples consist of h.c.p. Co and f.c.c. Pt phases. Disordered CoPt{sub 3} phases were developed with increasing End-Hall voltage (V{sub EH}) that induces greater ion-beam bombardment energy during deposition. This indicates that intermixing of Co and Pt increases with ion-beam bombardment. The coercivities (ranging from 100 Oe to 300 Oe) of Co/Pt multilayers decreased with increasing V{sub EH}. After annealing, the formation of CoPt{sub 3} was observed in these ion-beam bombarded samples, resulting in lower coercivities (H{sub c}{proportional_to} 50 Oe). The depressed transition temperature of CoPt{sub 3} for films deposited with the largest V{sub EH} was attributed to distorted CoPt{sub 3} structures that appeared with annealing. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Superhard PVD carbon films deposited with different gradients with and without additions of titanium and silicon

International Nuclear Information System (INIS)

Bauer, C.

2003-10-01

This work focusses on thin carbon-based films, deposited by magnetron sputtering with additional argon ion bombardment (0 eV to 800 eV) without extra adhesive layer on hard metal inserts. As one possibility of increasing the reduced adherence of hard carbon films the deposition of films with additions of titanium and silicon is studied. The aim of this work is to examine the influence of a modification of the transition between substrate and film by realizing three different types of deposition gradients. The pure carbon films are amorphous, the dominant network of atoms is formed by sp 2 bonded atoms. The amount of sp 3 bonded atoms is up to 30% and is influenced by the bombarding argon ion energy. Carbon films with additions of silicon are amorphous, only in films with a high amount of titanium (approx. 20 at%) nanocomposites of titanium carbide crystals with diameters of less than 5 nm in an amorphous carbon matrix were found. The mechanical properties and the behavior of single layer carbon films strongly depend on the argon ion energy. An increase of this energy leads to higher film hardness and higher residual stress and results in the delamination of superhard carbon films on hard metal substrates. The adhesion of single layer films for ion energies of more than 200 eV is significantly improved by additions of titanium and silicon, respectively. The addition of 23 at% silicon and titanium, respectively leads to a high reduction of the residual stress. In a non-reactive PVD process thin films were deposited with a continuously gradient in chemical composition. The results of the investigations of the films with two different concentrations of titanium and silicon, respectively show that carbon-based films with a good adhesion could be deposited. The combination of the two gradients in structure and properties and in chemical composition leads in the system with carbon and silicon carbide to hard and very adhesive films. Especially for carbon films with a high

An ion beam deceleration lens for ultra-low-energy ion bombardment of naked DNA

Energy Technology Data Exchange (ETDEWEB)

Thopan, P.; Prakrajang, K. [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Thongkumkoon, P. [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Thailand Center of Excellence in Physics, Commission on Higher Education, 328 Si Ayutthaya Road, Bangkok 10400 (Thailand); Suwannakachorn, D. [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Yu, L.D., E-mail: yuldyuld@gmail.com [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Thailand Center of Excellence in Physics, Commission on Higher Education, 328 Si Ayutthaya Road, Bangkok 10400 (Thailand)

2013-07-15

Highlights: ► An ion beam deceleration lens was designed and constructed. ► The deceleration lens was installed and tested. ► The decelerated ion beam energy was measured using an electrical field. ► Decelerated ultra-low-energy ion beam bombarded naked DNA. ► Ion beam with energy of a few tens of eV could break DNA strands. -- Abstract: Study of low-energy ion bombardment effect on biological living materials is of significance. High-energy ion beam irradiation of biological materials such as organs and cells has no doubt biological effects. However, ion energy deposition in the ion-bombarded materials dominantly occurs in the low-energy range. To investigate effects from very-low-energy ion bombardment on biological materials, an ion beam deceleration lens is necessary for uniform ion energy lower than keV. A deceleration lens was designed and constructed based on study of the beam optics using the SIMION program. The lens consisted of six electrodes, able to focus and decelerate primary ion beam, with the last one being a long tube to obtain a parallel uniform exiting beam. The deceleration lens was installed to our 30-kV bioengineering-specialized ion beam line. The final decelerated-ion energy was measured using a simple electrostatic field to bend the beam to range from 10 eV to 1 keV controlled by the lens parameters and the primary beam condition. In a preliminary test, nitrogen ion beam at 60 eV decelerated from a primary 20-keV beam bombarded naked plasmid DNA. The original DNA supercoiled form was found to change to relaxed and linear forms, indicating single or double strand breaks. The study demonstrated that the ion bombardment with energy as low as several-tens eV was possible to break DNA strands and thus potential to cause genetic modification of biological cells.

An ion beam deceleration lens for ultra-low-energy ion bombardment of naked DNA

International Nuclear Information System (INIS)

Thopan, P.; Prakrajang, K.; Thongkumkoon, P.; Suwannakachorn, D.; Yu, L.D.

2013-01-01

Highlights: ► An ion beam deceleration lens was designed and constructed. ► The deceleration lens was installed and tested. ► The decelerated ion beam energy was measured using an electrical field. ► Decelerated ultra-low-energy ion beam bombarded naked DNA. ► Ion beam with energy of a few tens of eV could break DNA strands. -- Abstract: Study of low-energy ion bombardment effect on biological living materials is of significance. High-energy ion beam irradiation of biological materials such as organs and cells has no doubt biological effects. However, ion energy deposition in the ion-bombarded materials dominantly occurs in the low-energy range. To investigate effects from very-low-energy ion bombardment on biological materials, an ion beam deceleration lens is necessary for uniform ion energy lower than keV. A deceleration lens was designed and constructed based on study of the beam optics using the SIMION program. The lens consisted of six electrodes, able to focus and decelerate primary ion beam, with the last one being a long tube to obtain a parallel uniform exiting beam. The deceleration lens was installed to our 30-kV bioengineering-specialized ion beam line. The final decelerated-ion energy was measured using a simple electrostatic field to bend the beam to range from 10 eV to 1 keV controlled by the lens parameters and the primary beam condition. In a preliminary test, nitrogen ion beam at 60 eV decelerated from a primary 20-keV beam bombarded naked plasmid DNA. The original DNA supercoiled form was found to change to relaxed and linear forms, indicating single or double strand breaks. The study demonstrated that the ion bombardment with energy as low as several-tens eV was possible to break DNA strands and thus potential to cause genetic modification of biological cells

The surface topography of Inconel, stainless steel and copper after argon ion bombardment

International Nuclear Information System (INIS)

Vogelbruch, K.; Vietzke, E.

1983-01-01

Energetic particle bombardment of metals is known to change the surface topography. To simulate the behaviour of the first wall of a fusion device under real plasma conditions, we have investigated the surface topography of rotating targets after 30 keV argon ion bombardment at 70deg incident angle by electron scanning micrographs. Under these conditions Inconel 600, 601, 625, stainless steel, and copper showed no cones, pyramids or cliffs, but only etching figures and at higher ion doses relatively flat hills. Thus, it can be concluded, that the influence of energetic particles on the first wall of a fusion reactor is smaller than expected from the results of such sputtering experiments, which have dealt with the formation of surface structures under ion bombardment at constant incident direction. (author)

Optimization of Proton CT Detector System and Image Reconstruction Algorithm for On-Line Proton Therapy.

Directory of Open Access Journals (Sweden)

Chae Young Lee

Full Text Available The purposes of this study were to optimize a proton computed tomography system (pCT for proton range verification and to confirm the pCT image reconstruction algorithm based on projection images generated with optimized parameters. For this purpose, we developed a new pCT scanner using the Geometry and Tracking (GEANT 4.9.6 simulation toolkit. GEANT4 simulations were performed to optimize the geometric parameters representing the detector thickness and the distance between the detectors for pCT. The system consisted of four silicon strip detectors for particle tracking and a calorimeter to measure the residual energies of the individual protons. The optimized pCT system design was then adjusted to ensure that the solution to a CS-based convex optimization problem would converge to yield the desired pCT images after a reasonable number of iterative corrections. In particular, we used a total variation-based formulation that has been useful in exploiting prior knowledge about the minimal variations of proton attenuation characteristics in the human body. Examinations performed using our CS algorithm showed that high-quality pCT images could be reconstructed using sets of 72 projections within 20 iterations and without any streaks or noise, which can be caused by under-sampling and proton starvation. Moreover, the images yielded by this CS algorithm were found to be of higher quality than those obtained using other reconstruction algorithms. The optimized pCT scanner system demonstrated the potential to perform high-quality pCT during on-line image-guided proton therapy, without increasing the imaging dose, by applying our CS based proton CT reconstruction algorithm. Further, we make our optimized detector system and CS-based proton CT reconstruction algorithm potentially useful in on-line proton therapy.

Tritium production in thorium by 135 MeV protons

International Nuclear Information System (INIS)

Lefort, M.; Simonoff, G.; Tarrago, X.; Bibron, R.

1960-01-01

We have measured the cross-section of tritium production by bombardment of thorium by 135 MeV protons in the Orsay synchro-cyclotron. The tritium was separated from the targets by heating in a graphite crucible with a high-frequency generator, under hydrogen gas pressure. Tritiated water was synthesised and the tritium was measured with liquid scintillator. A value of 19.5 ± 0.05 mbarns was obtained for the tritium-cross section and ten percent of tritons have energies higher than 35 MeV. This large cross-section is attributed to a double pick-up process. Reprint of a paper published in Le Journal de Physique et le Radium, t. 20, p. 959, dec 1959 [fr

Production and Extraction of [10C]-CO2 From Proton Bombardment of Molten 10B2O3

International Nuclear Information System (INIS)

Schueller, M.J.; Nickles, R.J.; Roberts, A.D.; Jensen, M.

2003-01-01

This work describes the production of 10C (t (1/2) = 19 s) from an enriched 10B2O3 target using a CTI RDS-112 11 MeV proton cyclotron. Proton beam heating is used to raise the target to a molten state (∼ 1300 deg. C), enabling the activity to diffuse to the surface of the melt. An infrared thermocouple monitors the melt temperature. Helium sweep gas then transports the activity to flow-through chemistry processing for human inhalation of 10CO2 for blood flow imaging with Positron Emission Tomography. The temperature-related diffusion of activity out of the white-hot molten glass target is discussed

HCN Production via Impact Ejecta Reentry During the Late Heavy Bombardment

Science.gov (United States)

Parkos, Devon; Pikus, Aaron; Alexeenko, Alina; Melosh, H. Jay

2018-04-01

Major impact events have shaped the Earth as we know it. The Late Heavy Bombardment is of particular interest because it immediately precedes the first evidence of life. The reentry of impact ejecta creates numerous chemical by-products, including biotic precursors such as HCN. This work examines the production of HCN during the Late Heavy Bombardment in more detail. We stochastically simulate the range of impacts on the early Earth and use models developed from existing studies to predict the corresponding ejecta properties. Using multiphase flow methods and finite-rate equilibrium chemistry, we then find the HCN production due to the resulting atmospheric heating. We use Direct Simulation Monte Carlo to develop a correction factor to account for increased yields due to thermochemical nonequilibrium. We then model 1-D atmospheric turbulent diffusion to find the time accurate transport of HCN to lower altitudes and ultimately surface water. Existing works estimate the necessary HCN molarity threshold to promote polymerization that is 0.01 M. For a mixing depth of 100 m, we find that the Late Heavy Bombardment will produce at least one impact event above this threshold with probability 24.1% for an oxidized atmosphere and 56.3% for a partially reduced atmosphere. For a mixing depth of 10 m, the probability is 79.5% for an oxidized atmosphere and 96.9% for a partially reduced atmosphere. Therefore, Late Heavy Bombardment impact ejecta is likely an HCN source sufficient for polymerization in shallow bodies of water, particularly if the atmosphere were in a partially reduced state.

ATLAS Silicon Microstrip Tracker Operation and Performance

CERN Document Server

Barone, G; The ATLAS collaboration

2013-01-01

The Semi-Conductor Tracker (SCT) is a silicon strip detector and one of the key precision tracking devices of the Inner Detector of the ATLAS experiment at CERN LHC. The SCT is constructed of $4088$ silicon detector modules for a total of 6.3 million channels. Each module is designed, constructed and tested to operate as a stand-alone unit, mechanically, electrically, optically and thermally. The modules are mounted into two types of structures: one barrel ($4$ cylinders) and two end-cap systems (9 disks on each). The current results from the successful operation of the SCT Detector at the LHC and its status after three years of operation will be presented. The operation of the detector including an overview of the main issues encountered is reported. The main emphasis is be given to the tracking performance of the SCT and the data quality during the $>2$ years of data taking of proton-proton collision data at $7$ TeV (and short periods of heavy ion collisions). The SCT has been fully operational throughout a...

ATLAS Silicon Microstrip Tracker Operation and Performance

CERN Document Server

Yamada, M; The ATLAS collaboration

2011-01-01

The SemiConductor Tracker (SCT), comprising of silicon micro-strip detectors is one of the key precision tracking devices in the ATLAS Inner Detector. ATLAS is one of the experiments at CERN LHC. The completed SCT is in very good shapes with 99.3% of the SCT’s 4088 modules (a total of 6.3 million strips) are operational. The noise occupancy and hit efficiency exceed the design specifications. In the talk the current status of the SCT will be reviewed. We will report on the operation of the detector, its performance and observed problems, with stress on the sensor and electronics performance. In December 2009 the ATLAS experiment at the CERN Large Hadron Collider (LHC) recorded the first proton-proton collisions at a centre-of-mass energy of 900 GeV and this was followed by the unprecedented energy of 7 TeV in March 2010. The Semi-Conductor Tracker (SCT) is the key precision tracking device in ATLAS, made from silicon micro-strip detectors processed in the planar p-in-n technology. The signals from the strip...

15-MeV proton emission from ICRF-heated plasmas

Energy Technology Data Exchange (ETDEWEB)

Jarvis, O N; Conroy, S W; Hone, M; Sadler, G J; Van Belle, P [Commission of the European Communities, Luxembourg (Luxembourg)

1994-07-01

{sup 3} He-d fusion reaction protons emitted from ICRF-heated discharges were recorded with a silicon diode detector installed in the JET tokamak. The detection rates demonstrated that sawtooth crashes eject fast particles from the inner region of the plasma. The energy spectra of the fusion product protons using H minority provided evidence for the second harmonic acceleration of deuterons at sub-MW levels of RF power and those with {sup 3} He minority did not possess the expected twin-lobed shape predicted by kinematics calculations. (authors). 5 refs., 6 figs.

15-MeV proton emission from ICRF-heated plasmas

Energy Technology Data Exchange (ETDEWEB)

Jarvis, O.N.; Conroy, S.W.; Hone, M.; Sadler, G.J.; Belle, P. van [Commission of the European Communities, Abingdon (United Kingdom). JET Joint Undertaking

1994-12-31

{sup 3}He-d fusion reaction protons emitted from ICRF-heated discharges were recorded with a silicon diode detector installed in the Joint European Torus (JET). The detection rates demonstrated that sawtooth crashes eject fast particles from the inner region of the plasma. The energy spectra of the fusion product protons using H minority provided evidence for the second harmonic acceleration of deuterons at sub-MW levels of RF power and those with {sup 3}He minority did not possess the expected twin-lobed shape predicted by kinematics calculations. (author) 5 refs., 6 figs.

Effect of helium ion bombardment on hydrogen behaviour in stainless steel

International Nuclear Information System (INIS)

Guseva, M.I.; Stolyarova, V.G.; Gorbatov, E.A.

1987-01-01

The effect of helium ion bombardment on hydrogen behaviour in 12Kh18N10T stainless steel is investigated. Helium and hydrogen ion bombardment was conducted in the ILU-3 ion accelerator; the fluence and energy made up 10 16 -5x10 17 cm -2 , 30 keV and 10 16 -5x10 18 cm -2 , 10 keV respectively. The method of recoil nuclei was used for determination of helium and hydrogen content. Successive implantation of helium and hydrogen ions into 12Kh18N10T stainless steel results in hydrogen capture by defects formed by helium ions

Radiation effects in the infrared absorption and the silicon structure

International Nuclear Information System (INIS)

Groza, A.A.; Litovchenko, P.G.; Starchik, M.Yi.

2006-01-01

The results of the long-term studies of the silicon irradiated by the high-energy particles are systemised. Using of the electrons, protons, reactor neutrons for irradiation and the wide range of the fluence irradiation have given the possibility to the authors to obtain the information on the character of the formed damages in the lattice of the silicon, to compare the effectiveness of the different damage input depending on the irradiation type, to obtain the information on the radiation damage reconstruction, their impact to the oxygen impurity behaviour, which influences substantially as the silicon properties, as the devices characteristics to be developed on its base

Neutron yields from bombardment of α-particles

International Nuclear Information System (INIS)

Nakasima, Ryuzo

1982-09-01

The thick target neutron yields from bombardment of <10 MeV α-particles are calculated based on the reaction cross sections. The results for the elements of Z < 15 are compared with existing calculated or measured neutron yield data. For the elements of 16 < Z < 50, elemental or isotopic neutron yields are calculated if the cross section data are available. (author)

Quantification of steroid conjugates using fast atom bombardment mass spectrometry

International Nuclear Information System (INIS)

Gaskell, S.J.

1990-01-01

Fast atom bombardment/mass spectrometry or liquid secondary ion mass spectrometry provides the capability for direct analysis of steroid conjugates (sulfates, glucuronides) without prior hydrolysis or derivatization. During the analysis of biologic extracts, limitations on the sensitivity of detection arise from the presence of co-extracted material which may suppress or obscure the analyte signal. A procedure is described for the quantitative determination of dehydroepiandrosterone sulfate in serum which achieved selective isolation of the analyte using immunoadsorption extraction and highly specific detection using tandem mass spectrometry. A stable isotope-labeled analog [( 2H2]dehydroepiandrosterone sulfate) was used as internal standard. Fast atom bombardment of dehydroepiandrosterone sulfate yielded abundant [M-H]- ions that fragmented following collisional activation to give HSO4-; m/z 97. During fast atom bombardment/tandem mass spectrometry of serum extracts, a scan of precursor ions fragmenting to give m/z 97 detected dehydroepiandrosterone sulfate and the [2H2]-labeled analog with a selectivity markedly superior to that observed using conventional mass spectrometry detection. Satisfactory agreement was observed between quantitative data obtained in this way and data obtained by gas chromatography/mass spectrometry of the heptafluorobutyrates of dehydroepiandrosterone sulfate and [2H2]dehydroepiandrosterone sulfate obtained by direct derivatization. 21 refs

Physico-chemical modification of polyethersulphone induced by high energy proton, C+ and Ne6+ ions

International Nuclear Information System (INIS)

Vinodh Kumar, S.; Biswavarathi, V.; Jal, P.; Dey, K.; Krishna, J.B.M.; Saha, A.

2004-01-01

Polyehersulphone (PES) was irradiated with 4 MeV proton, 3.6 MeV C + and 145 MeV Ne 6+ ions at different ion fluences. The ion induced spectral changes were analyzed by UV-visible and fluorescence spectroscopy. The increase in optical absorption, which shifts gradually from near UV to the visible region with increase in fluence for the three different types of bombarding ions was observed. A significant loss in fluorescence intensity with increase in fluence for three different ions was observed. (author)

Silicon-based photonic crystals fabricated using proton beam writing combined with electrochemical etching method.

Science.gov (United States)

Dang, Zhiya; Breese, Mark Bh; Recio-Sánchez, Gonzalo; Azimi, Sara; Song, Jiao; Liang, Haidong; Banas, Agnieszka; Torres-Costa, Vicente; Martín-Palma, Raúl José

2012-07-23

A method for fabrication of three-dimensional (3D) silicon nanostructures based on selective formation of porous silicon using ion beam irradiation of bulk p-type silicon followed by electrochemical etching is shown. It opens a route towards the fabrication of two-dimensional (2D) and 3D silicon-based photonic crystals with high flexibility and industrial compatibility. In this work, we present the fabrication of 2D photonic lattice and photonic slab structures and propose a process for the fabrication of 3D woodpile photonic crystals based on this approach. Simulated results of photonic band structures for the fabricated 2D photonic crystals show the presence of TE or TM gap in mid-infrared range.

Comparative yields of alkali elements and thallium from uranium irradiated with high-energy protons, /sup 3/He and /sup 12/C

CERN Document Server

Gustafsson, Hans Åke; Jonson, B; Jonsson, O C; Lindfors, V; Mattsson, S; Poskanzer, A M; Ravn, H L; Schardt, D

1981-01-01

Mass-separated ion beams of the alkali elements Na, K, and Fr, and of the element Tl are produced by bombarding a uranium target with 600 Me V protons, 890 MeV /sup 3/He/sup 2+/, and 936 MeV /sup 12/C/sup 4+/. Isotopic production yields are reported. In the case of the /sup 12/C beam these are thick target yields. Absolute cross-sections for the proton-beam data were deduced by normalizing the delay-time corrected yield curves to measured cross-sections. For products farthest away from stability the /sup 3/He/sup 2+/ beam generally gives the highest yields. (17 refs).

Particle identification by silicon detectors

International Nuclear Information System (INIS)

Santos, Denison de Souza

1997-01-01

A method is developed for the evaluation of the energy loss, dE/dx, of a charged particle traversing a silicon strip detector. The method is applied to the DELPHI microvertex detector leading to diagrams of dE/dx versus momentum for different particles. The specific case of pions and protons is treated and the most probable value of dE/dx and the width of the dE/dx distribution for those particles in the momentum range of 0.2 GeV/c to 1.5 GeV/c, are obtained. The resolution found is 13.4 % for particles with momentum higher than 2 GeV/c and the separation power is 2.9 for 1.0 GeV/c pions and protons. (author)

Ion-beam mixing in silicon and germanium at low temperatures

International Nuclear Information System (INIS)

Clark, G.J.; Marwick, A.D.; Poker, D.B.

1982-01-01

Ion-beam mixing of thin marker layers in amorphous silicon and germanium was studied using irradiations with Xe ions at temperatures of 34k and 77k. The marker species, ion energies and doses were: in silicon, markers of Ge and Pt irradiated with 200-keV Xe up to 2.7x10 16 ions cm -2 ; and in germanium, markers of Al and Si bombarded with 295-keV Xe up to 1.63x10 16 ions cm -2 . In silicon, Pt markers were found to broaden at about the same rate at 34k and 77k; and the rate of broadening was similar to that found by other workers when expressed as an efficiency of mixing, i.e., when dependence on ion dose and deposited energy was factored out. However, a Ge marker irradiated at 34k did not broaden from its original thickness. In germanium, markers of both Al and Si were mixed by irradiation at 34k, but at 77k only the Al marker broadened; the Si marker did not. The broadening of the markers is ascribed to ballistic mixing, while the cases where no broadening occurred are explicable if diffusion by a defect mechanism transported displaced marker atoms back to traps near their original sites

Hyperon production in proton-nucleus collisions at a center-of-mass energy of {radical}(s{sub NN}) = 41.6 GeV at HERA-B and design of silicon microstrip detectors for tracking at LHCb

Energy Technology Data Exchange (ETDEWEB)

Agari, Michaela

2006-07-01

The topics of this thesis are the measurements of hyperon production in protonnucleus collisions at {radical}(s)=41.6 GeV with the Hera-B detector located at DESY, Hamburg (Germany), and the design of silicon microstrip sensors for the LHCb experiment at CERN, Geneva (Switzerland). {lambda}, {xi} and {omega} hyperons and their antiparticles were reconstructed from 113.5 . 10{sup 6} inelastic collisions of protons with fixed carbon, titanium and tungsten targets. With these samples, antiparticle-to-particle ratios, cross sections integrated for the accessible kinematic region of Hera-B and single differential cross sections as function of transverse momentum, d{sigma}/dp{sub T}{sup 2} (for {lambda} and {xi}) and rapidity, d{sigma}/dy (for {lambda} only), have been been measured as well as the dependence of these quantities on the atomic number of the target nucleus, as parameterized using the Glauber model. The obtained ratios follow the same trend as found for the energy dependence of measurements from nucleus-nucleus collisions. Silicon microstrip sensors have been designed for the tracking system of the LHCb detector. Evaluating the performance in beam tests at CERN, the strip geometry and sensor thickness were varied optimizing for a large signal-to-noise ratio, a small number of read-out channels and a low occupancy. The detector is currently being built to be operational for first proton-proton collisions in autumn 2007. (orig.)

Construction and test of a silicon drift chamber

International Nuclear Information System (INIS)

Holl, P.

1985-06-01

The present thesis presents the first fully applicable silicon detectors which work as drift chambers. Four different types of detectors were constructed. By a suitable geometry and electronic lay-out one- and two-dimensional position measurements were made possible. Chapter 2 describes function and construction of the detectors, chapter 3 their fabrication process. In chapter 4 construction and results of the test of a silicon drift chamber under laboratory conditions are described. By variation of the applied voltages the optimal operational conditions could be determined and material properties of the silicon, as for instance the electron mobility measured. A position resolution better than 5 μm at a drift length up to 4 mm was reached. Chapter 5 presents the results of the test of a silicon drift chamber under real experimental conditions in a particle beam of the super proton synchroton (SPS) of CERN. The best position resolution measured there is 10 μm. Chapter 6 summarizes the obtained results and discusses finally application possibilities and improvement proposals for silicon drift chambers. (orig./HSI) [de

Production of proton-rich nuclei around Z = 84-90 in fusion-evaporation reactions

Energy Technology Data Exchange (ETDEWEB)

Chen, Peng-Hui [Chinese Academy of Sciences, Institute of Modern Physics, Lanzhou (China); Lanzhou University, School of Nuclear Science and Technology, Lanzhou (China); University of Chinese Academy of Sciences, Beijing (China); Feng, Zhao-Qing; Li, Jun-Qing; Jin, Gen-Ming [Chinese Academy of Sciences, Institute of Modern Physics, Lanzhou (China); Niu, Fei [Chinese Academy of Sciences, Institute of Modern Physics, Lanzhou (China); Henan Normal University, Institute of Particle and Nuclear Physics, Xinxiang (China); Guo, Ya-Fei [Chinese Academy of Sciences, Institute of Modern Physics, Lanzhou (China); Lanzhou University, School of Nuclear Science and Technology, Lanzhou (China); Zhang, Hong-Fei [Lanzhou University, School of Nuclear Science and Technology, Lanzhou (China)

2017-05-15

Within the framework of the dinuclear system model, production cross sections of proton-rich nuclei with charged numbers of Z = 84-90 are investigated systematically. Possible combinations with the {sup 28}Si, {sup 32}S, {sup 40}Ar bombarding the target nuclides {sup 165}Ho, {sup 169}Tm, {sup 170-174}Yb, {sup 175,176}Lu, {sup 174,} {sup 176-180}Hf and {sup 181}Ta are analyzed thoroughly. The optimal excitation energies and evaporation channels are proposed to produce the proton-rich nuclei. The systems are feasible to be constructed in experiments. It is found that the neutron shell closure of N = 126 is of importance during the evaporation of neutrons. The experimental excitation functions in the {sup 40}Ar induced reactions can be nicely reproduced. The charged particle evaporation is comparable with neutrons in cooling the excited proton-rich nuclei, in particular for the channels with α and proton evaporation. The production cross section increases with the mass asymmetry of colliding systems because of the decrease of the inner fusion barrier. The channels with pure neutron evaporation depend on the isotopic targets. But it is different for the channels with charged particles and more sensitive to the odd-even effect. (orig.)

Radiation hard silicon sensors for the CMS tracker upgrade

CERN Document Server

Pohlsen, Thomas

2013-01-01

At an instantaneous luminosity of $5 \\times 10^{34}$ cm$^{-2}$ s$^{-1}$, the high-luminosity phase of the Large Hadron Collider (HL-LHC) is expected to deliver a total of $3\\,000$ fb$^{-1}$ of collisions, hereby increasing the discovery potential of the LHC experiments significantly. However, the radiation dose of the tracking systems will be severe, requiring new radiation hard sensors for the CMS tracker. The CMS tracker collaboration has initiated a large material investigation and irradiation campaign to identify the silicon material and design that fulfils all requirements for detectors for the HL-LHC. Focussing on the upgrade of the outer tracker region, pad sensors as well as fully functional strip sensors have been implemented on silicon wafers with different material properties and thicknesses. The samples were irradiated with a mixture of neutrons and protons corresponding to fluences as expected for the positions of detector layers in the future tracker. Different proton energies were used for irr...

Beam test of CSES silicon strip detector module

Science.gov (United States)

Zhang, Da-Li; Lu, Hong; Wang, Huan-Yu; Li, Xin-Qiao; Xu, Yan-Bing; An, Zheng-Hua; Yu, Xiao-xia; Wang, Hui; Shi, Feng; Wang, Ping; Zhao, Xiao-Yun

2017-05-01

The silicon-strip tracker of the China Seismo-Electromagnetic Satellite (CSES) consists of two double-sided silicon strip detectors (DSSDs) which provide incident particle tracking information. A low-noise analog ASIC VA140 was used in this study for DSSD signal readout. A beam test on the DSSD module was performed at the Beijing Test Beam Facility of the Beijing Electron Positron Collider (BEPC) using a 400-800 MeV/c proton beam. The pedestal analysis results, RMSE noise, gain correction, and intensity distribution of incident particles of the DSSD module are presented. Supported by the XXX Civil Space Programme

Tailoring of silicon crystals for relativistic-particle channeling

International Nuclear Information System (INIS)

Guidi, V.; Antonini, A.; Baricordi, S.; Logallo, F.; Malagu, C.; Milan, E.; Ronzoni, A.; Stefancich, M.; Martinelli, G.; Vomiero, A.

2005-01-01

In the last years, the research on channeling of relativistic particles has progressed considerably. A significant contribution has been provided by the development of techniques for quality improvement of the crystals. In particular, a planar etching of the surfaces of the silicon crystals proved useful to remove the superficial layer, which is a region very rich in imperfections, in turn leading to greater channeling efficiency. Micro-fabrication techniques, borrowed from silicon technology, may also be useful: micro-indentation and deposition of tensile or compressive layers onto silicon samples allow one to impart an even curvature to the samples. In this way, different topologies may be envisaged, such as a bent crystal for deflection of protons and ions or an undulator to force coherent oscillations of positrons and electrons

Highly -oriented growth of polycrystalline silicon films on glass by pulsed magnetron sputtering

International Nuclear Information System (INIS)

Reinig, P.; Selle, B.; Fenske, F.; Fuhs, W.; Alex, V.; Birkholz, M.

2002-01-01

Nominally undoped polycrystalline silicon (poly-Si) thin films were deposited on glass at 450 deg. C at high deposition rate (>100 nm/min) by pulsed dc magnetron sputtering. The pulse frequency was found to have a significant influence on the preferred grain orientation. The x-ray diffraction pattern exhibits a strong enhancement of the (400) reflex with increasing pulse frequency. The quantitative evaluation reveals that over 90% of the grains are oriented. The observed change in preferred grain orientation in poly-Si films at low temperatures is associated with concurrent ion bombardment of the growing film

Energy response of neutron area monitor with silicon semiconductor detector

International Nuclear Information System (INIS)

Kitaguchi, Hiroshi; Izumi, Sigeru; Kobayashi, Kaoru; Kaihara, Akihisa; Nakamura, Takashi.

1993-01-01

A prototype neutron area monitor with a silicon semiconductor detector has been developed which has the energy response of 1 cm dose equivalent recommended by the ICRP-26. Boron and proton radiators are coated on the surface of the silicon semiconductor detector. The detector is set at the center of a cylindrical polyethylene moderator. This moderator is covered by a porous cadmium board which serves as the thermal neutron absorber. Neutrons are detected as α-particles generated by the nuclear reaction 10 B(n,α) 7 Li and as recoil protons generated by the interaction of fast neutrons with hydrogen. The neutron energy response of the monitor was measured using thermal neutrons and monoenergetic fast neutrons generated by an accelerator. The response was consistent with the 1 cm dose equivalent response required for the monitor within ±34% in the range of 0.025 - 15 Mev. (author)

MD and BCA simulations of He and H bombardment of fuzz in bcc elements

Science.gov (United States)

Klaver, T. P. C.; Zhang, S.; Nordlund, K.

2017-08-01

We present results of MD simulations of low energy He ion bombardment of low density fuzz in bcc elements. He ions can penetrate several micrometers into sparse fuzz, which allows for a sufficient He flux through it to grow the fuzz further. He kinetic energy falls off exponentially with penetration depth. A BCA code was used to carry out the same ion bombardment on the same fuzz structures as in MD simulations, but with simpler, 10 million times faster calculations. Despite the poor theoretical basis of the BCA at low ion energies, and the use of somewhat different potentials in MD and BCA calculations, the ion penetration depths predicted by BCA are only ∼12% less than those predicted by MD. The MD-BCA differences are highly systematic and trends in the results of the two methods are very similar. We have carried out more than 200 BCA calculation runs of ion bombardment of fuzz, in which parameters in the ion bombardment process were varied. For most parameters, the results show that the ion bombardment process is quite generic. The ion species (He or H), ion mass, fuzz element (W, Ta, Mo, Fe) and fuzz element lattice parameter turned out to have a modest influence on ion penetration depths at most. An off-normal angle of incidence strongly reduces the ion penetration depth. Increasing the ion energy increases the ion penetration, but the rate by which ion energy drops off at high ion energies follows the same exponential pattern as at lower energies.

Theoretical and experimental comparison of proton and helium-beam radiography using silicon pixel detectors

Science.gov (United States)

Gehrke, T.; Amato, C.; Berke, S.; Martišíková, M.

2018-02-01

Ion-beam radiography (iRAD) could potentially improve the quality control of ion-beam therapy. The main advantage of iRAD is the possibility to directly measure the integrated stopping power. Until now there is no clinical implementation of iRAD. Topics of ongoing research include developing dedicated detection systems to achieve the desired spatial resolution (SR) and investigating different ion types as imaging radiation. This work focuses on the theoretical and experimental comparison of proton (pRAD) and helium-beam radiography (αRAD). The experimental comparison was performed with an in-house developed detection system consisting of silicon pixel detectors. This system enables the measurement of energy deposition of single ions, their tracking, and the identification of the ion type, which is important for αRAD due to secondary fragments. A 161 mm-thick PMMA phantom with an air gap of 1 mm placed at different depths was imaged with a 168 MeV u-1 proton/helium-ion beam at the Heidelberg ion-beam therapy center. The image quality in terms of SR and contrast-to-noise ratio (CNR) was evaluated. After validating MC simulations against experiments, pRAD and αRAD were compared to carbon-beam radiography (cRAD) in simulations. The theoretical prediction that the CNR of pRAD and αRAD is equal at similar imaging doses was experimentally confirmed. The measured SR of αRAD was 55% better compared to pRAD. The simulated cRads showed the expected improvement in SR and the decreased CNR at the same dose compared to the αRads, however only at dose levels exceeding typical doses of diagnostic x-ray projections. For clinically applicable dose levels, the cRads suffered from an insufficient number of carbon ions per pixel (220 μm  ×  220 μm). In conclusion, it was theoretically and experimentally shown that αRAD provides a better SR than pRAD without any disadvantages concerning the CNR. Using carbon ions instead of helium ions leads to a better SR at the

Crystal Collimation Cleaning Measurements with Proton Beams in LHC

CERN Document Server

Rossi, Roberto; Andreassen, Odd Oyvind; Butcher, Mark; Dionisio Barreto, Cristovao Andre; Masi, Alessandro; Mirarchi, Daniele; Montesano, Simone; Lamas Garcia, Inigo; Redaelli, Stefano; Scandale, Walter; Serrano Galvez, Pablo; Rijllart, Adriaan; Valentino, Gianluca; CERN. Geneva. ATS Department

2016-01-01

During this MD, performed on July 29th, 2016, bent silicon crystal were tested with proton beams for a possible usage of crystal-assisted collimation. Tests were performed at both injection energy and flat top using horizontal and vertical crystal. Loss maps with crystals at 6.5 TeV were measured.

Ion bombardment effects on surface states in selected oxide systems: rutile and alkaline earth titanates

International Nuclear Information System (INIS)

Gruen, D.M.

1978-01-01

In this paper, the nature of the surface states of n-type TiO 2 and SrTiO 3 is discussed and the role of ion bombardment in modifying the properties of these states is elucidated. Insofar as possible, the interrelationships between oxide nonstoichiometry, surface states, ion bombardment effects and photoelectrolysis are explored

Simulation results of the electron-proton telescope for Solar Orbiter

Energy Technology Data Exchange (ETDEWEB)

Boden, Sebastian; Steinhagen, Jan; Kulkarni, Shrinivasrao; Grunau, Jan; Paspirgilis, Rolf; Martin, Cesar; Boettcher, Stephan; Seimetz, Lars; Schuster, Bjoern; Kulemzin, Alexander; Wimmer-Schweingruber, Robert F. [Christian-Albrechts-Universitaet Kiel (Germany)

2013-07-01

The Electron Proton Telescope (EPT) is one of five instruments in the Energetic Particle Detector suite for Solar Orbiter. It investigates low energy electrons and protons of solar events. EPT covers an energy range from 20400 keV for electrons and 20 keV-7 MeV for protons and distinguishes electrons from protons using a magnet/foil technique with silicon detectors. There will be two EPT units, each with double-barreled telescopes, one looking sunwards/antisunwards and the other north/south. EPT is designed using the GEometry ANd Tracking (GEANT) simulation toolkit developed by CERN for Monte Carlo calculations. Here we present the details of our simulations and the simulation results with respect to energy coverage and the geometrical factor of the EPT instrument. We also look at the far-field of the EPT magnets, which is important for electromagnetic cleanliness considerations.

MUST: A silicon strip detector array for radioactive beam experiments

International Nuclear Information System (INIS)

Blumenfeld, Y.; Auger, F.; Sauvestre, J.E.; Marechal, F.; Ottini, S.; Alamanos, N.; Barbier, A.; Beaumel, D.; Bonnereau, B.; Charlet, D.; Clavelin, J.F.; Courtat, P.; Delbourgo-Salvador, P.; Douet, R.; Engrand, M.; Ethvignot, T.; Gillibert, A.; Khan, E.; Lapoux, V.; Lagoyannis, A.; Lavergne, L.; Lebon, S.; Lelong, P.; Lesage, A.; Le Ven, V.; Lhenry, I.; Martin, J.M.; Musumarra, A.; Pita, S.; Petizon, L.; Pollacco, E.; Pouthas, J.; Richard, A.; Rougier, D.; Santonocito, D.; Scarpaci, J.A.; Sida, J.L.; Soulet, C.; Stutzmann, J.S.; Suomijaervi, T.; Szmigiel, M.; Volkov, P.; Voltolini, G.

1999-01-01

A new and innovative array, MUST, based on silicon strip technology and dedicated to the study of reactions induced by radioactive beams on light particles is described. The detector consists of 8 silicon strip - Si(Li) telescopes used to identify recoiling light charged particles through time of flight, energy loss and energy measurements and to determine precisely their scattering angle through X, Y position measurements. Each 60x60 mm 2 double sided silicon strip detector with 60 vertical and 60 horizontal strips yields an X-Y position resolution of 1 mm, an energy resolution of 50 keV, a time resolution of around 1 ns and a 500 keV energy threshold for protons. The backing Si(Li) detectors stop protons up to 25 MeV with a resolution of approximately 50 keV. CsI crystals read out by photo-diodes which stop protons up to 70 MeV are added to the telescopes for applications where higher energy particles need to be detected. The dedicated electronics in VXIbus standard allow us to house the 968 logic and analog channels of the array in one crate placed adjacent to the reaction chamber and fully remote controlled, including pulse visualization on oscilloscopes. A stand alone data acquisition system devoted to the MUST array has been developed. Isotope identification of light charged particles over the full energy range has been achieved, and the capability of the system to measure angular distributions of states populated in inverse kinematics reactions has been demonstrated

Theoretical simulations of atomic and polyatomic bombardment of an organic overlayer on a metallic substrate

CERN Document Server

Krantzman, K D; Delcorte, A; Garrison, B J

2003-01-01

Our previous molecular dynamics simulations on initial test systems have laid the foundation for understanding some of the effects of polyatomic bombardment. In this paper, we describe simulations of the bombardment of a more realistic model system, an overlayer of sec-butyl-terminated polystyrene tetramers on a Ag left brace 1 1 1 right brace substrate. We have used this model system to study the bombardment with Xe and SF sub 5 projectiles at kinetic energies ranging from 0.50 to 5.0 keV. SF sub 5 sputters more molecules than Xe, but a higher percentage of these are damaged rather than ejected intact when the bombarding energy is greater than 0.50 keV. Therefore, at energies comparable to experimental values, the efficiency, measured as the yield-to-damage ratio, is greater with Xe than SF sub 5. Stable and intact molecules are generally produced by upward moving substrate atoms, while fragments are produced by the upward and lateral motion of reflected projectile atoms and fragments from the target molecul...

Effects of ion beam bombardment of carbon thin films deposited onto tungsten carbide and tool steels

Energy Technology Data Exchange (ETDEWEB)

Awazu, Kaoru; Yoshida, Hiroyuki [Industrial Research Inst. of Ishikawa (Japan); Watanabe, Hiroshi [Gakushuin Univ., Tokyo (Japan); Iwaki, Masaya; Guzman, L [RIKEN, Saitama (Japan)

1992-04-15

A study was made of the effects of argon ion bombardment of carbon thin films deposited onto WC and tool steels. Carbon thin film deposition was performed at various temperatures ranging from 200degC to 350degC, using C{sub 6}H{sub 6} gas. Argon ion beam bombardment of the films was carried out at an energy of 150 keV with a dose of 1x10{sup 16} ions cm{sup -2}. The hardness and adhesion of the films were measured by means of Knoop hardness and scratch tests respectively. The structure of the carbon films was estimated by laser Raman spectroscopy, and the relations were investigated between the mechanical properties and the structure of the films. The hardness of carbon thin films increases as their deposition temperature decreases; this tendency corresponds to the increase in amorphous structure estimated by Raman spectra. Argon ion bombardment results in constant hardness and fraction of amorphous structure. Argon ion beam bombardment of films prior to additional carbon deposition may cause the adhesion of the subsequently deposited films to improve. It is concluded that argon ion beam bombardment is useful for improving the properties of carbon films deposited onto WC and tool steels. (orig.).

Effects of ion beam bombardment of carbon thin films deposited onto tungsten carbide and tool steels

International Nuclear Information System (INIS)

Awazu, Kaoru; Yoshida, Hiroyuki; Watanabe, Hiroshi; Iwaki, Masaya; Guzman, L.

1992-01-01

A study was made of the effects of argon ion bombardment of carbon thin films deposited onto WC and tool steels. Carbon thin film deposition was performed at various temperatures ranging from 200degC to 350degC, using C 6 H 6 gas. Argon ion beam bombardment of the films was carried out at an energy of 150 keV with a dose of 1x10 16 ions cm -2 . The hardness and adhesion of the films were measured by means of Knoop hardness and scratch tests respectively. The structure of the carbon films was estimated by laser Raman spectroscopy, and the relations were investigated between the mechanical properties and the structure of the films. The hardness of carbon thin films increases as their deposition temperature decreases; this tendency corresponds to the increase in amorphous structure estimated by Raman spectra. Argon ion bombardment results in constant hardness and fraction of amorphous structure. Argon ion beam bombardment of films prior to additional carbon deposition may cause the adhesion of the subsequently deposited films to improve. It is concluded that argon ion beam bombardment is useful for improving the properties of carbon films deposited onto WC and tool steels. (orig.)

Irradiation and annealing of p-type silicon carbide

Energy Technology Data Exchange (ETDEWEB)

Lebedev, Alexander A.; Bogdanova, Elena V.; Grigor' eva, Maria V.; Lebedev, Sergey P. [A.F. Ioffe Physical-Technical Institute, St. Petersburg, 194021 (Russian Federation); Kozlovski, Vitaly V. [St. Petersburg State Polytechnic University, St. Petersburg, 195251 (Russian Federation)

2014-02-21

The development of the technology of semiconductor devices based on silicon carbide and the beginning of their industrial manufacture have made increasingly topical studies of the radiation hardness of this material on the one hand and of the proton irradiation to form high-receptivity regions on the other hand. This paper reports on a study of the carrier removal rate (V{sub d}) in p-6H-SiC under irradiation with 8 MeV protons and of the conductivity restoration in radiation- compensated epitaxial layers of various p-type silicon carbide polytypes. V{sub d} was determined by analysis of capacitance-voltage characteristics and from results of Hall effect measurements. It was found that the complete compensation of samples with the initial value of Na - Nd ≈ 1.5 × 10{sup 18} cm{sup −3} occurs at an irradiation dose of ∼1.1 × 10{sup 16} cm{sup −2}. It is shown that specific features of the sublimation layer SiC (compared to CVD layers) are clearly manifested upon the gamma and electron irradiation and are hardly noticeable under the proton and neutron irradiation. It was also found that the radiation-induced compensation of SiC is retained after its annealing at ≤1000°C. The conductivity is almost completely restored at T ≥ 1200°C. This character of annealing of the radiation compensation is independent of a silicon carbide polytype and the starting doping level of the epitaxial layer. The complete annealing temperatures considerably exceed the working temperatures of SiC-based devices. It is shown that the radiation compensation is a promising method in the technology of high-temperature devices based on SiC.

Confirming the key role of Ar+ ion bombardment in the growth feature of nanostructured carbon materials by PECVD

Science.gov (United States)

Liu, Yulin; Lin, Jinghuang; Jia, Henan; Chen, Shulin; Qi, Junlei; Qu, Chaoqun; Cao, Jian; Feng, Jicai; Fei, Weidong

2017-11-01

In order to confirm the key role of Ar+ ion bombardment in the growth feature of nanostructured carbon materials (NCMs), here we report a novel strategy to create different Ar+ ion states in situ in plasma enhanced chemical vapor deposition (PECVD) by separating catalyst film from the substrate. Different bombardment environments on either side of the catalyst film were created simultaneously to achieve multi-layered structural NCMs. Results showed that Ar+ ion bombardment is crucial and complex for the growth of NCMs. Firstly, Ar+ ion bombardment has both positive and negative effects on carbon nanotubes (CNTs). On one hand, Ar+ ions can break up the graphic structure of CNTs and suppress thin CNT nucleation and growth. On the other hand, Ar+ ion bombardment can remove redundant carbon layers on the surface of large catalyst particles which is essential for thick CNTs. As a result, the diameter of the CNTs depends on the Ar+ ion state. As for vertically oriented few-layer graphene (VFG), Ar+ ions are essential and can even convert the CNTs into VFG. Therefore, by combining with the catalyst separation method, specific or multi-layered structural NCMs can be obtained by PECVD only by changing the intensity of Ar+ ion bombardment, and these special NCMs are promising in many fields.

Confirming the key role of Ar+ ion bombardment in the growth feature of nanostructured carbon materials by PECVD.

Science.gov (United States)

Liu, Yulin; Lin, Jinghuang; Jia, Henan; Chen, Shulin; Qi, Junlei; Qu, Chaoqun; Cao, Jian; Feng, Jicai; Fei, Weidong

2017-11-24

In order to confirm the key role of Ar + ion bombardment in the growth feature of nanostructured carbon materials (NCMs), here we report a novel strategy to create different Ar + ion states in situ in plasma enhanced chemical vapor deposition (PECVD) by separating catalyst film from the substrate. Different bombardment environments on either side of the catalyst film were created simultaneously to achieve multi-layered structural NCMs. Results showed that Ar + ion bombardment is crucial and complex for the growth of NCMs. Firstly, Ar + ion bombardment has both positive and negative effects on carbon nanotubes (CNTs). On one hand, Ar + ions can break up the graphic structure of CNTs and suppress thin CNT nucleation and growth. On the other hand, Ar + ion bombardment can remove redundant carbon layers on the surface of large catalyst particles which is essential for thick CNTs. As a result, the diameter of the CNTs depends on the Ar + ion state. As for vertically oriented few-layer graphene (VFG), Ar + ions are essential and can even convert the CNTs into VFG. Therefore, by combining with the catalyst separation method, specific or multi-layered structural NCMs can be obtained by PECVD only by changing the intensity of Ar + ion bombardment, and these special NCMs are promising in many fields.

Alteration of the UV-visible reflectance spectra of H2O ice by ion bombardment

Science.gov (United States)

Sack, N. J.; Boring, J. W.; Johnson, R. E.; Baragiola, R. A.; Shi, M.

1991-01-01

Satellite in the Jovian and Saturnian system exhibit differences in reflectivity between their 'leading' and 'trailing' surfaces which can affect the local vapor pressure. Since these differences are thought to be due to differences in the flux of bombarding magnetospheric ions, the influence of ion impact on the UV-visible reflectance of water ice surfaces (20-90 K) by keV ion bombardment was studied. An observed decrease in reflectance in the UV is attributed to rearrangement processes that affect the physical microstructure and surface 'roughness'. The ratio in reflectance of bombarded to freshly deposited films is compared to the ratio of the reflectance of the leading and trailing hemispheres for Europa and Ganymede.

Direct thermal effects of the Hadean bombardment did not limit early subsurface habitability

Science.gov (United States)

Grimm, R. E.; Marchi, S.

2018-03-01

Intense bombardment is considered characteristic of the Hadean and early Archean eons, yet some detrital zircons indicate that near-surface water was present and thus at least intervals of clement conditions may have existed. We investigate the habitability of the top few kilometers of the subsurface by updating a prior approach to thermal evolution of the crust due to impact heating, using a revised bombardment history, a more accurate thermal model, and treatment of melt sheets from large projectiles (>100 km diameter). We find that subsurface habitable volume grows nearly continuously throughout the Hadean and early Archean (4.5-3.5 Ga) because impact heat is dissipated rapidly compared to the total duration and waning strength of the bombardment. Global sterilization was only achieved using an order of magnitude more projectiles in 1/10 the time. Melt sheets from large projectiles can completely resurface the Earth several times prior to ∼4.2 Ga but at most once since then. Even in the Hadean, melt sheets have little effect on habitability because cooling times are short compared to resurfacing intervals, allowing subsurface biospheres to be locally re-established by groundwater infiltration between major impacts. Therefore the subsurface is always habitable somewhere, and production of global steam or silicate-vapor atmospheres are the only remaining avenues to early surface sterilization by bombardment.

Hadroproduction of the {chi}{sub 1} and {chi}{sub 2} states of charmonium in 800-GeV/c proton-silicon interactions

Energy Technology Data Exchange (ETDEWEB)

Alexopoulos, T. [University of Wisconsin, Madison, Wisconsin 53706 (United States); Antoniazzi, L. [University and INFN of Pavia, I-27100 Pavia, (Italy); Arenton, M. [University of Virginia, Charlottesville, Virginia 22901 (United States); Ballagh, H. C. [University of California at Berkeley, Berkeley, California 94720 (United States); Bingham, H. [University of California at Berkeley, Berkeley, California 94720 (United States); Blankman, A. [University of Pennsylvania, Philadelphia, Pennsylvania 19104 (United States); Block, M. [Northwestern University, Evanston, Illinois 60208 (United States); Boden, A. [University of California at Los Angeles, Los Angeles, California 90024 (United States); Bonomi, G. [University and INFN of Pavia, I-27100 Pavia, (Italy); Cao, Z. L. [University of Virginia, Charlottesville, Virginia 22901 (United States)] (and others)

2000-08-01

The cross sections for the hadroproduction of the {chi}{sub 1} and {chi}{sub 2} states of charmonium in proton-silicon collisions at {radical}(s)=38.8 GeV have been measured in Fermilab fixed target experiment 771. The {chi} states were observed via their radiative decay to J/{psi}{gamma}, where the photon converted to e{sup +}e{sup -} in the material of the spectrometer. The estimated values for the {chi}{sub 1} and {chi}{sub 2} cross sections for x{sub F}>0 are 263{+-}69(stat){+-}32(syst) and 498{+-}143(stat){+-}67(syst) nb per nucleon, respectively. The resulting {sigma}({chi}{sub 1})/{sigma}({chi}{sub 2}) ratio of 0.53{+-}0.20(stat){+-}0.07(syst), although somewhat larger than most theoretical expectations, can be accommodated by the latest theoretical estimates. (c) 2000 The American Physical Society.

ATLAS' inner silicon tracker on track for completion

CERN Multimedia

2005-01-01

Last week, the team working at the SR1 facility on the inner detector of the ATLAS experiment reached a project milestone after the delivery of the last Semi-conductor Tracker (SCT) barrel to CERN. The third barrel before its insertion into the support structure.The insertion of a completed barrel to its support structure is one of the highlights of the assembly and test sequence of the SCT in SR1. The inner detector will eventually sit in the 2 teslas magnetic field of the ATLAS solenoid, tracking charged particles from proton-proton collisions at the centre of ATLAS. The particles will be measured by a pixel detector (consisting of 3 pixel layers), an SCT (4 silicon strip layers) and a transition radiation tracker (TRT) (consisting of more than 52,000 straw tubes - see Bulletin 14/2005). The SCT has a silicon surface area of 61m2 with about 6 million operational channels so that all tracks can be identified and precisely measured. During 2004 a team of physicists, engineers, and technicians from several...

Shielding measurements for a 230 MeV proton beam

International Nuclear Information System (INIS)

Siebers, J.V.

1990-01-01

Energetic secondary neutrons produced as protons interact with accelerator components and patients dominate the radiation shielding environment for proton radiotherapy facilities. Due to the scarcity of data describing neutron production, attenuation, absorbed dose, and dose equivalent values, these parameters were measured for 230 MeV proton bombardment of stopping length Al, Fe, and Pb targets at emission angles of 0 degree, 22 degree, 45 degree, and 90 degree in a thick concrete shield. Low pressure tissue-equivalent proportional counters with volumes ranging from 1 cm 3 to 1000 cm 3 were used to obtain microdosimetric spectra from which absorbed dose and radiation quality are deduced. Does equivalent values and attenuation lengths determined at depth in the shield were found to vary sharply with angle, but were found to be independent of target material. Neutron dose and radiation length values are compared with Monte Carlo neutron transport calculations performed using the Los Alamos High Energy Transport Code (LAHET). Calculations used 230 MeV protons incident upon an Fe target in a shielding geometry similar to that used in the experiment. LAHET calculations overestimated measured attenuation values at 0 degree, 22 degree, and 45 degree, yet correctly predicted the attenuation length at 90 degree. Comparison of the mean radiation quality estimated with the Monte Carlo calculations with measurements suggest that neutron quality factors should be increased by a factor of 1.4. These results are useful for the shielding design of new facilities as well as for testing neutron production and transport calculations

Variation of minority charge carrier lifetime in high-resistance p-type silicon under irradiation

International Nuclear Information System (INIS)

Basheleishvili, Z.V.; Garnyk, V.S.; Gorin, S.N.; Pagava, T.A.

1984-01-01

The minority carrier lifetime (tau) variation was studied in the process of p-type silicon bombardment with fast 8 MeV electrons. The irradiation and all measurements were carried out at room temperature. The tau quantity was measured by the photoconductivity attenuation method at a low injection level 20% measurement error; the resistivity was measured by the four-probe method (10% error). The resistivity and minority charge carrier lifetime tau are shown to increase with the exposure dose. It is supposed that as radiation dose increases, the rearrangement of the centres responsible for reducing the lifetime occurs and results in a tau increase in the material being irradiated, however the tau value observed in the original samples is not attained. The restoration of the minority carrier lifetime in p-type high-resistance silicon with a growing exposure dose might proceed due to reduction in the free carrier concentration

Study on evolution of gases from fluoropolymer films bombarded with heavy ions

International Nuclear Information System (INIS)

Minamisawa, Renato Amaral; Zimmerman, Robert Lee; Budak, Satilmis; Ila, Daryush

2008-01-01

Ion beam bombardment provides a unique way of material modification by inducing a high degree of localized electronic excitation. The ion track, or affected volume along the ion path through the material is related to the total damage and possible structural changes. Here we study the evolution of gases emitted by poly(tetrafluorethylene-co-perfluoro-(propyl vinyl ether)) (PFA) fluoropolymer bombarded with MeV gold ions. The gas was monitored by a residual gas analyzer (RGA), as a function of the ion fluence. Micro-Raman, atomic force microscopy and optical absorption were used to analyze the chemical structure changes and sputtering yield

Commissioning of the recoil silicon detector for the HERMES experiment

International Nuclear Information System (INIS)

Pickert, N.C.

2008-02-01

The reconstruction of the missing mass is limited by the position and momentum resolution of the HERMES spectrometer. In order to reach a higher accuracy in the measurements the backscattered nucleon must also be detected. A detector suited for this must give the possibility, to determine the momentum of the particles over a very large range: from minimally ionizing particles up to protons, which are stopped in the detector. The detector must also be able to discriminate hadrons and mesons as well as cover the complete spatial region around the target. In the winter 2005-2006 such a recoil detector was installed in the HERMES experiment. The detector sonsists of three partial detectors, a silicon counter within the scattering chamber, a sintillating-fiber detector and a photon detector. Before the installation of the detector the silicon modules were tested in a bench test and checked together with the other particle detectors in a test experiment. A large part of this dissertation is dedicated to the planning and performance of these tests as well to the evaluation of them. It could be show, that the modules worked accordly to their specifications, however because of unexpectedly high noise a signal correction became necessary. Different models for the correction were developed and tested in the framework of these thesis. In spite of the high noise cosmic muons could be detected and their energy deposition measured with a signal-to-noise ratio of 2:1. In the winter break 2005-2006 the recoil detector was installed into the HERMES experiment. First diagnosis and analysis software was developed. The silicon detector measured successfully energy depositions of minimally ionizing particles up to protons stopped in the sensor. Minimally ionizing particles could be detected with a signal-to-noise ratio of 5:1. By means of track information of the scintillating-fiber detector protons could be discriminated from pions and other mesons by the silicon detector. The HERMES

Commissioning of the recoil silicon detector for the HERMES experiment

Energy Technology Data Exchange (ETDEWEB)

Pickert, N C

2008-02-15

The reconstruction of the missing mass is limited by the position and momentum resolution of the HERMES spectrometer. In order to reach a higher accuracy in the measurements the backscattered nucleon must also be detected. A detector suited for this must give the possibility, to determine the momentum of the particles over a very large range: from minimally ionizing particles up to protons, which are stopped in the detector. The detector must also be able to discriminate hadrons and mesons as well as cover the complete spatial region around the target. In the winter 2005-2006 such a recoil detector was installed in the HERMES experiment. The detector sonsists of three partial detectors, a silicon counter within the scattering chamber, a sintillating-fiber detector and a photon detector. Before the installation of the detector the silicon modules were tested in a bench test and checked together with the other particle detectors in a test experiment. A large part of this dissertation is dedicated to the planning and performance of these tests as well to the evaluation of them. It could be show, that the modules worked accordly to their specifications, however because of unexpectedly high noise a signal correction became necessary. Different models for the correction were developed and tested in the framework of these thesis. In spite of the high noise cosmic muons could be detected and their energy deposition measured with a signal-to-noise ratio of 2:1. In the winter break 2005-2006 the recoil detector was installed into the HERMES experiment. First diagnosis and analysis software was developed. The silicon detector measured successfully energy depositions of minimally ionizing particles up to protons stopped in the sensor. Minimally ionizing particles could be detected with a signal-to-noise ratio of 5:1. By means of track information of the scintillating-fiber detector protons could be discriminated from pions and other mesons by the silicon detector. The HERMES

Pulse shape method for the Chimera silicon detectors

Energy Technology Data Exchange (ETDEWEB)

Pagano, A.; Arena, N.; Cardella, G.; D' Andrea, M.; Filippo, E. de; Fichera, F.; Giudice, N.; Guardone, N.; Grimaldi, A.; Nicotra, D.; Papa, M.; Pirrone, S.; Politi, G.; Rapicavoli, C.; Rizza, G.; Russotto, P.; Sacca, G.; Urso, S.; Lanzano, G. [Catania Univ., INFN Catania and Dipartimento di Fisica e Astronomia (Italy); Alderighi, M.; Sechi, G. [INFN Milano and Istituto di Fisica Cosmica CNR, Milano (Italy); Amorini, F.; Anzalone, A.; Cali, C.; Campagna, V.; Cavallaro, S.; Di Stefano, A.; Giustolisi, F.; La Guidara, E.; Lanzalone, G.; Maiolino, C.; Porto, F.; Rizzo, F.; Salamone, S. [Catania Univ., INFN-LNS and Dipartimento di Fisica e Astronomia (Italy); Auditore, L.; Trifiro, A.; Trimarchi, M. [Messina Univ., INFN and Dipartimento di Fisica (Italy); Bassini, R.; Boiano, C.; Guazzoni, P.; Russo, S.; Sassi, M.; Zetta, L. [Milano Univ., INFN Milano and Dipartimento di Fisica (Italy); Blicharska, J.; Grzeszczuk, A. [Silesia Univ., Institute of Physics, Katowice (Poland); Chatterjee, M.B. [Saha Institute Of Nuclear Physics, Kolkata (India); Geraci, E.; Zipper, W. [Bologna Univ., INFN Bologna and Dipartimento di Fisica (Italy); Rosato, E.; Vigilante, M. [Napoli Univ., INFN and Dipartimento di Fisica (Italy); Schroder, W.U.; T-ke, J. [Rochester Univ., Dept. of Chemistry, Rochester, N.Y. (United States)

2003-07-01

Since January 2003, the 4{pi} CHIMERA (Charged Heavy Ions Mass and Energy Resolving Array) detector in its full configuration has successfully been operated at the 'Catania Laboratori Nazionali del Sud' (LNS) accelerator facility. The detector has been used with a variety of beams from the Superconducting Cyclotron in heavy-ion reaction studies at Fermi bombarding energies. Future experiments with a focus on isospin physics at Fermi energies, planned for both primary and less intense secondary particle beams, suggest the development of new and more versatile experimental particle identification methods. Recent achievements in implementing specific pulse shape particle identification methods for CHIMERA silicon detectors are reported. They suggest an upgrade of the present charge and mass identification capability of CHIMERA by a simple extension of the method. (authors)

Maskless proton beam writing in gallium arsenide

Energy Technology Data Exchange (ETDEWEB)

Mistry, P. [Ion Beam Centre, University of Surrey, Guildford GU2 7XH (United Kingdom) and Nano-Electronics Centre, Advanced Technology Institute, University of Surrey, Guildford GU2 7XH (United Kingdom)]. E-mail: p.mistry@surrey.ac.uk; Gomez-Morilla, I. [Ion Beam Centre, University of Surrey, Guildford GU2 7XH (United Kingdom); Smith, R.C. [Nano-Electronics Centre, Advanced Technology Institute, University of Surrey, Guildford GU2 7XH (United Kingdom); Thomson, D. [Advanced Technology Institute, University of Surrey, Guildford GU2 7XH (United Kingdom); Grime, G.W. [Ion Beam Centre, University of Surrey, Guildford GU2 7XH (United Kingdom); Webb, R.P. [Ion Beam Centre, University of Surrey, Guildford GU2 7XH (United Kingdom); Gwilliam, R. [Ion Beam Centre, University of Surrey, Guildford GU2 7XH (United Kingdom); Jeynes, C. [Ion Beam Centre, University of Surrey, Guildford GU2 7XH (United Kingdom); Cansell, A. [Ion Beam Centre, University of Surrey, Guildford GU2 7XH (United Kingdom); Merchant, M. [Ion Beam Centre, University of Surrey, Guildford GU2 7XH (United Kingdom); Kirkby, K.J. [Ion Beam Centre, University of Surrey, Guildford GU2 7XH (United Kingdom)

2007-07-15

Proton beam writing (PBW) is a direct write technique that employs a focused MeV proton beam which is scanned in a pre-determined pattern over a target material which is subsequently electrochemically etched or chemically developed. By changing the energy of the protons the range of the protons can be changed. The ultimate depth of the structure is determined by the range of the protons in the material and this allows structures to be formed to different depths. PBW has been successfully employed on etchable glasses, polymers and semiconductor materials such as silicon (Si) and gallium arsenide (GaAs). This study reports on PBW in p-type GaAs and compares experimental results with computer simulations using the Atlas (copy right) semiconductor device package from SILVACO. It has already been proven that hole transport is required for the electrochemical etching of GaAs using Tiron (4,5-dihydroxy-m-benzenedisulfonic acid, di-sodium salt). PBW in GaAs results in carrier removal in the irradiated regions and consequently minimal hole transport (in these regions) during electrochemical etching. As a result the irradiated regions are significantly more etch resistant than the non-irradiated regions. This allows high aspect ratio structures to be formed.

Maskless proton beam writing in gallium arsenide

International Nuclear Information System (INIS)

Mistry, P.; Gomez-Morilla, I.; Smith, R.C.; Thomson, D.; Grime, G.W.; Webb, R.P.; Gwilliam, R.; Jeynes, C.; Cansell, A.; Merchant, M.; Kirkby, K.J.

2007-01-01

Proton beam writing (PBW) is a direct write technique that employs a focused MeV proton beam which is scanned in a pre-determined pattern over a target material which is subsequently electrochemically etched or chemically developed. By changing the energy of the protons the range of the protons can be changed. The ultimate depth of the structure is determined by the range of the protons in the material and this allows structures to be formed to different depths. PBW has been successfully employed on etchable glasses, polymers and semiconductor materials such as silicon (Si) and gallium arsenide (GaAs). This study reports on PBW in p-type GaAs and compares experimental results with computer simulations using the Atlas (copy right) semiconductor device package from SILVACO. It has already been proven that hole transport is required for the electrochemical etching of GaAs using Tiron (4,5-dihydroxy-m-benzenedisulfonic acid, di-sodium salt). PBW in GaAs results in carrier removal in the irradiated regions and consequently minimal hole transport (in these regions) during electrochemical etching. As a result the irradiated regions are significantly more etch resistant than the non-irradiated regions. This allows high aspect ratio structures to be formed

ATLAS silicon microstrip Semiconductor Tracker (SCT)

International Nuclear Information System (INIS)

Unno, Y.

2000-01-01

Silicon microstrip semiconductor tracking system (SCT) will be in operation in the ATLAS detector in the Large Hadron Collider (LHC) at CERN. Challenging issues in the SCT are the radiation tolerance to the fluence of 2x10 14 1-MeV-neutron-equivalent particles/cm 2 at the designed luminosity of 1x10 34 cm -2 /s of the proton-proton collisions and the speed of the electronics to identify the crossing bunches at 25 ns. The developments and the status of the SCT are presented from the point of view of these issues. Series production of the SCT will start in the year 2001 and the SCT will be installed into the ATLAS detector during 2003-2004

Continuum radiation emitted from transition metals under ion bombardment

International Nuclear Information System (INIS)

El Boujlaidi, A.; Kaddouri, A.; Ait El Fqih, M.; Hammoum, K.; Aouchiche, H.

2012-01-01

Optical emission of transition metals has been studied during 5 keV Kr + ions bombardment within and without oxygen atmosphere in the colliding chamber. The observed spectra consist of a series of discrete lines superimposed on a broad continuum. Generally, the emission intensity was influenced by the presence of oxygen giving rise to transient effects as well as to an increase in the line intensity. The behaviours of spectral lines were successfully explained in term of electron-transfer process between the excited sputtered atom and the solid surface. In this work, we have focused our study on the continuous radiation emitted during ion bombardment. The experimental results suggest that the continuum emission depends on the nature of metal and very probably related to its electronic structure. The collective deactivation of 3d-shell electrons appears to play a role in the emission of this radiation. The observed enhancement in the presence of oxygen is probably due to a significant contribution of the oxide molecules. (authors)

Deep-penetration calculations in concrete and iron for shielding of proton therapy accelerators

International Nuclear Information System (INIS)

Sheu, Rong-Jiun; Chen, Yen-Fu; Lin, Uei-Tyng; Jiang, Shiang-Huei

2012-01-01

Proton accelerators in the energy range of approximately 200 MeV have become increasingly popular for cancer treatment in recent years. These proton therapy facilities usually involve bulky concrete or iron in their shielding design or accelerator structure. Simple shielding data, such as source terms or attenuation lengths for various proton energies and materials are useful in designing accelerator shielding. Understanding the appropriateness or uncertainties associated with these data, which are largely generated from Monte Carlo simulations, is critical to the quality of a shielding design. This study demonstrated and investigated the problems of deep-penetration calculations on the estimation of shielding parameters through an extensive comparison between the FLUKA and MCNPX calculations for shielding against a 200-MeV proton beam hitting an iron target. Simulations of double-differential neutron production from proton bombardment were validated by comparison with experimental data. For the concrete shielding, the FLUKA calculated depth–dose distributions were consistent with the MCNPX results, except for some discrepancies in backward directions. However, for the iron shielding, if FLUKA is used inappropriately then overestimation of neutron attenuation can be expected as shown by this work because of the multigroup treatment for low-energy neutrons in FLUKA. Two neutron energy group structures, three degrees of self-shielding correction, and two iron compositions were considered in this study. Significant variation of the resulting attenuation lengths indicated the importance of problem-dependent multigroup cross sections and proper modeling of iron composition in deep-penetration calculations.

Internal alignment and position resolution of the silicon tracker of DAMPE determined with orbit data

Science.gov (United States)

Tykhonov, A.; Ambrosi, G.; Asfandiyarov, R.; Azzarello, P.; Bernardini, P.; Bertucci, B.; Bolognini, A.; Cadoux, F.; D'Amone, A.; De Benedittis, A.; De Mitri, I.; Di Santo, M.; Dong, Y. F.; Duranti, M.; D'Urso, D.; Fan, R. R.; Fusco, P.; Gallo, V.; Gao, M.; Gargano, F.; Garrappa, S.; Gong, K.; Ionica, M.; La Marra, D.; Lei, S. J.; Li, X.; Loparco, F.; Marsella, G.; Mazziotta, M. N.; Peng, W. X.; Qiao, R.; Salinas, M. M.; Surdo, A.; Vagelli, V.; Vitillo, S.; Wang, H. Y.; Wang, J. Z.; Wang, Z. M.; Wu, D.; Wu, X.; Zhang, F.; Zhang, J. Y.; Zhao, H.; Zimmer, S.

2018-06-01

The DArk Matter Particle Explorer (DAMPE) is a space-borne particle detector designed to probe electrons and gamma-rays in the few GeV to 10 TeV energy range, as well as cosmic-ray proton and nuclei components between 10 GeV and 100 TeV. The silicon-tungsten tracker-converter is a crucial component of DAMPE. It allows the direction of incoming photons converting into electron-positron pairs to be estimated, and the trajectory and charge (Z) of cosmic-ray particles to be identified. It consists of 768 silicon micro-strip sensors assembled in 6 double layers with a total active area of 6.6 m2. Silicon planes are interleaved with three layers of tungsten plates, resulting in about one radiation length of material in the tracker. Internal alignment parameters of the tracker have been determined on orbit, with non-showering protons and helium nuclei. We describe the alignment procedure and present the position resolution and alignment stability measurements.

Bragg-case synchrotron section topography of silicon implanted with high-energy protons and α particles

International Nuclear Information System (INIS)

Wieteska, K.; Wierzchowski, W.; Graeff, W.

1997-01-01

Back reflection section topography using white-beam synchrotron radiation has been applied for the investigation of silicon implanted with 1 and 1.6 MeV protons and 4.8 MeV α particles. The beam width was limited to 5 μm, and a series of spots in the vicinity of a centrally adjusted reflection were indexed and analysed. The back-reflection section pattern of implanted crystals usually exhibits fringes corresponding to the reflection from the surface and a series of fringes corresponding to the rear region of the shot-through layer, the destroyed layer and the bulk. The patterns were used for direct evaluation of ion ranges and thicknesses of the shot-through layer. The overall characteristics of the obtained patterns were successfully reproduced in simulations based on numerical integration of the Takagi-Taupin equations. The agreement between the simulation and experiment proves that the lattice-parameter depth-distribution profiles can be assumed to be proportional to interstitial-vacancy distributions obtained using the Monte Carlo method from the Biersack-Ziegler theory. The simulation also reproduced interference tails observed in some section patterns. It was found that these tails are caused by the ion-dose change along the beam and they were probably formed due to the interference between the radiation reflected from the bulk and those rays reflected by the rear region of the shot-through layer. (orig.)

The effect of oxygen ion beam bombardment on the properties of tin indium oxide/polyethylene terephthalate complex

International Nuclear Information System (INIS)

Li, Li; Liu, Honglin; Zou, Lin; Ding, Wanyu; Ju, Dongying; Chai, Weiping

2013-01-01

The tin indium oxide (ITO) films were deposited onto the polyethylene terephthalate (PET) surface that has been bombarded by an O ion beam. The variation of the O bombardment time resulted in the production of ITO/PET complex with different properties. Characterization by four-point probe measurement after the bending fatigue test showed that the adhesion property of the ITO/PET complex could be improved by the increase of O bombardment time while little change of electrical resistivity was observed. Scanning electron microscopy results showed that after the bending fatigue test, the nano scale seams and micro scale trenches appeared at the surface of the ITO/PET complex. The former was only the cracks of ITO film, which has little influence on the continuity and electrical resistivity of ITO film. On the contrary, the micro scale trenches were caused by the peeling off of ITO chips at the cracks, which mainly influenced the continuity and electrical resistivity of ITO film. With the increase of O bombardment time, the number and length of the micro scale trenches decreased. X-ray photoelectron spectrometry characterization showed that with the increase of O bombardment time, parts of the methylene C bonds were transformed into C=O bonds, which could be broken to form C-O-In(Sn) bonds at the initial stage of ITO film growth. By these C-O-In(Sn) crosslink bonds, the ITO film could adhere well onto the PET and the ITO/PET complex display better anti-bending fatigue property. Finally, in the context of the application of the ITO/PET complex as a flexible electrode substrate, the present work reveals a simple way to crosslink them, as well as the physicochemical mechanism happening at the interface of complex. - Highlights: • Polyethylene terephthalate (PET) surface was bombarded by N ions. • Tin indium oxide (ITO) film was deposited on bombarded PET surface. • By bombardment, methylene C bond on PET surface was broken and replaced by C=O bond. • C=O bond was

The effect of oxygen ion beam bombardment on the properties of tin indium oxide/polyethylene terephthalate complex

Energy Technology Data Exchange (ETDEWEB)

Li, Li; Liu, Honglin; Zou, Lin [School of Materials Science and Engineering, Dalian Jiaotong University, Dalian 116028 (China); Ding, Wanyu, E-mail: dwysd_2000@163.com [School of Materials Science and Engineering, Dalian Jiaotong University, Dalian 116028 (China); Key Laboratory of Materials Modification by Laser, Ion and Electron Beams (Dalian University of Technology), Ministry of Education, Dalian 116028 (China); Ju, Dongying [Department of Material Science and Engineering, Saitama Institute of Technology, Fukaya 369-0293 (Japan); Chai, Weiping [School of Materials Science and Engineering, Dalian Jiaotong University, Dalian 116028 (China)

2013-10-31

The tin indium oxide (ITO) films were deposited onto the polyethylene terephthalate (PET) surface that has been bombarded by an O ion beam. The variation of the O bombardment time resulted in the production of ITO/PET complex with different properties. Characterization by four-point probe measurement after the bending fatigue test showed that the adhesion property of the ITO/PET complex could be improved by the increase of O bombardment time while little change of electrical resistivity was observed. Scanning electron microscopy results showed that after the bending fatigue test, the nano scale seams and micro scale trenches appeared at the surface of the ITO/PET complex. The former was only the cracks of ITO film, which has little influence on the continuity and electrical resistivity of ITO film. On the contrary, the micro scale trenches were caused by the peeling off of ITO chips at the cracks, which mainly influenced the continuity and electrical resistivity of ITO film. With the increase of O bombardment time, the number and length of the micro scale trenches decreased. X-ray photoelectron spectrometry characterization showed that with the increase of O bombardment time, parts of the methylene C bonds were transformed into C=O bonds, which could be broken to form C-O-In(Sn) bonds at the initial stage of ITO film growth. By these C-O-In(Sn) crosslink bonds, the ITO film could adhere well onto the PET and the ITO/PET complex display better anti-bending fatigue property. Finally, in the context of the application of the ITO/PET complex as a flexible electrode substrate, the present work reveals a simple way to crosslink them, as well as the physicochemical mechanism happening at the interface of complex. - Highlights: • Polyethylene terephthalate (PET) surface was bombarded by N ions. • Tin indium oxide (ITO) film was deposited on bombarded PET surface. • By bombardment, methylene C bond on PET surface was broken and replaced by C=O bond. • C=O bond was

The development of two ASIC's for a fast silicon strip detector readout system

International Nuclear Information System (INIS)

Christain, D.; Haldeman, M.; Yarema, R.; Zimmerman, T.; Newcomer, F.M.; VanBerg, R.

1989-01-01

A high speed, low noise readout system for silicon strip detectors is being developed for Fermilab E771, which will begin taking data in 1989. E771 is a fixed target experiment designed to study the production of B hadrons by an 800 GeV/c proton beam. The experimental apparatus consists of an open geometry magnetic spectrometer featuring good muon and electron identification and a 16000 channel silicon microstrip vertex detector. This paper reviews the design and prototyping of two application specific integrated circuits (ASIC's) an amplifier and a discriminator, which are being produced for the silicon strip detector readout system

ATLAS silicon module assembly and qualification tests at IFIC Valencia

International Nuclear Information System (INIS)

Bernabeu, J; Civera, J V; Costa, M J; Escobar, C; Fuster, J; Garcia, C; Garcia-Navarro, J E; Gonzalez, F; Gonzalez-Sevilla, S; Lacasta, C; Llosa, G; Marti-Garcia, S; Minano, M; Mitsou, V A; Modesto, P; Nacher, J; Rodriguez-Oliete, R; Sanchez, F J; Sospedra, L; Strachko, V

2007-01-01

ATLAS experiment, designed to probe the interactions of particles emerging out of proton proton collisions at energies of up to 14 TeV, will assume operation at the Large Hadron Collider (LHC) at CERN in 2007. This paper discusses the assembly and the quality control tests of forward detector modules for the ATLAS silicon microstrip detector assembled at the Instituto de Fisica Corpuscular (IFIC) in Valencia. The construction and testing procedures are outlined and the laboratory equipment is briefly described. Emphasis is given on the module quality achieved in terms of mechanical and electrical stability

Identification and tracking of low energy spectator protons

Energy Technology Data Exchange (ETDEWEB)

Mussgiller, A.

2007-07-20

The present theses discusses the development, technical design and realization as well as the read-out electronics of a detection system for the identification and tracking of low energy spectator protons. With the knowledge of the four-momentum of such spectator protons it will be possible to use deuterium as an effective neutron target. Previous measurements with an early version of the detection system have already shown that this method works quite well to investigate for instance the {omega} or {eta}-meson production in proton-neutron collisions. Moreover, after the completion and installation of the polarized internal target (PIT) at ANKE, it will be even possible to engage in that field with double polarized experiments. To increase the luminosity the polarized target is equipped with an extended target cell. The described detection-system will provide the vertex reconstruction for this extended interaction region. In addition, it will act as an independent beam polarimeter at ANKE. The detection system consists of three layers of double-sided silicon strip detectors which are arranged in a telescope structure and placed inside the accelerator vacuum as close as 2 cm to the interaction region. The modular design of the electronics and the support structures for the detectors allows one to exchange detectors and electronics in a maximum flexible way. In a minimum configuration the telescope is equipped with two detectors, a thin ({approx} 69 {mu}m) double-sided Silicon strip detector as a first layer and a very thick ({>=} 5 mm) double-sided micro-structured Lithium-drifted Silicon detector as a second layer. With this arrangement it is possible to track and identify protons in a kinetic energy range from 2.5 MeV to 25 MeV. For deuterons this range for such a telescope configuration is from 4 MeV to 34 MeV. The performance concerning the energy determination and tracking is shown based on data taken during a beam-time in November of 2003. With the existing

Identification and tracking of low energy spectator protons

International Nuclear Information System (INIS)

Mussgiller, A.

2007-01-01

The present theses discusses the development, technical design and realization as well as the read-out electronics of a detection system for the identification and tracking of low energy spectator protons. With the knowledge of the four-momentum of such spectator protons it will be possible to use deuterium as an effective neutron target. Previous measurements with an early version of the detection system have already shown that this method works quite well to investigate for instance the ω or η-meson production in proton-neutron collisions. Moreover, after the completion and installation of the polarized internal target (PIT) at ANKE, it will be even possible to engage in that field with double polarized experiments. To increase the luminosity the polarized target is equipped with an extended target cell. The described detection-system will provide the vertex reconstruction for this extended interaction region. In addition, it will act as an independent beam polarimeter at ANKE. The detection system consists of three layers of double-sided silicon strip detectors which are arranged in a telescope structure and placed inside the accelerator vacuum as close as 2 cm to the interaction region. The modular design of the electronics and the support structures for the detectors allows one to exchange detectors and electronics in a maximum flexible way. In a minimum configuration the telescope is equipped with two detectors, a thin (∼ 69 μm) double-sided Silicon strip detector as a first layer and a very thick (≥ 5 mm) double-sided micro-structured Lithium-drifted Silicon detector as a second layer. With this arrangement it is possible to track and identify protons in a kinetic energy range from 2.5 MeV to 25 MeV. For deuterons this range for such a telescope configuration is from 4 MeV to 34 MeV. The performance concerning the energy determination and tracking is shown based on data taken during a beam-time in November of 2003. With the existing setup an energy

β-particle energy-summing correction for β-delayed proton emission measurements

Energy Technology Data Exchange (ETDEWEB)

Meisel, Z., E-mail: meisel@ohio.edu [Institute of Nuclear and Particle Physics, Department of Physics and Astronomy, Ohio University, Athens, OH 45701 (United States); Joint Institute for Nuclear Astrophysics – Center for the Evolution of the Elements (United States); Santo, M. del [Joint Institute for Nuclear Astrophysics – Center for the Evolution of the Elements, National Superconducting Cyclotron Laboratory, Michigan State University, East Lansing, MI 48824 (United States); Crawford, H.L. [Nuclear Science Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720 (United States); Cyburt, R.H. [Joint Institute for Nuclear Astrophysics – Center for the Evolution of the Elements, National Superconducting Cyclotron Laboratory, Michigan State University, East Lansing, MI 48824 (United States); Grinyer, G.F. [Grand Accélérateur National d' Ions Lourds (GANIL), CEA/DRF-CNRS/IN2P3, Bvd Henri Becquerel, Caen 14076 (France); Langer, C. [Joint Institute for Nuclear Astrophysics – Center for the Evolution of the Elements, Institute for Applied Physics, Goethe University Frankfurt am Main, 60438 Frankfurt am Main (Germany); Montes, F. [Joint Institute for Nuclear Astrophysics – Center for the Evolution of the Elements, National Superconducting Cyclotron Laboratory, Michigan State University, East Lansing, MI 48824 (United States); Schatz, H. [Joint Institute for Nuclear Astrophysics – Center for the Evolution of the Elements, National Superconducting Cyclotron Laboratory, Michigan State University, East Lansing, MI 48824 (United States); Department of Physics and Astronomy, Michigan State University, East Lansing, MI 48824 (United States); Smith, K. [Joint Institute for Nuclear Astrophysics – Center for the Evolution of the Elements, Department of Physics and Astronomy, University of Tennessee, Knoxville, TN 37996 (United States)

2017-02-01

A common approach to studying β-delayed proton emission is to measure the energy of the emitted proton and corresponding nuclear recoil in a double-sided silicon-strip detector (DSSD) after implanting the β-delayed proton-emitting (βp) nucleus. However, in order to extract the proton-decay energy, the measured energy must be corrected for the additional energy implanted in the DSSD by the β-particle emitted from the βp nucleus, an effect referred to here as β-summing. We present an approach to determine an accurate correction for β-summing. Our method relies on the determination of the mean implantation depth of the βp nucleus within the DSSD by analyzing the shape of the total (proton + recoil + β) decay energy distribution shape. We validate this approach with other mean implantation depth measurement techniques that take advantage of energy deposition within DSSDs upstream and downstream of the implantation DSSD.

Proton induced x-ray emission analysis of trace elements in thick bread samples

International Nuclear Information System (INIS)

Mohamed Baker Al-bedri; Ikram Jameel Abdul Ghani; Ibrahim Abdul Rahman Al-aghil

2009-01-01

Proton induced X-ray emission (PIXE) technique has been used for identification and quantitative analysis of the elemental concentration in thick bread samples. Bread samples were air-oven dried at 60degC and milled in a clean agate mortar to homogenize the sample and pressed into a pellet. PIXE technique relies on the analysis of the energy spectra of the characteristic X-ray emitted from the thick bread sample and the orchard leaf standard (NIST-SRM-1571) bombarded with 2.0 MeV protons. The concentration of the elements (Cl, K, Ca, Mn, Fe, Cu, and Zn) in the bread samples was determined by comparison with NIST orchard leaf standard. The accuracy of the measurements ranged between ±2% and ±10% for the most elements detected in this method. The aim of this study is to establish the reference concentration of trace elements in the Iraqi bread using PIXE technique. (author)

Ion bombardment effect on surface state of metal

International Nuclear Information System (INIS)

Vaulin, E.P.; Georgieva, N.E.; Martynenko, T.P.

1990-01-01

The effect of slow argon ion bombardment on the surface microstructure of polycrystalline copper as well as the effect of surface state on sputtering of D-16 polycrystalline alloy are experimentally studied. Reduction of copper surface roughness is observed. It is shown that the D-16 alloy sputtering coefficient is sensitive to the surface state within the limits of the destructed surface layer

A molecular dynamics study of helium bombardments on tungsten nanoparticles

Science.gov (United States)

Li, Min; Hou, Qing; Cui, Jiechao; Wang, Jun

2018-06-01

Molecular dynamics simulations were conducted to study the bombardment process of a single helium atom on a tungsten nanoparticle. Helium atoms ranging from 50 eV to 50 keV were injected into tungsten nanoparticles with a diameter in the range of 2-12 nm. The retention and reflection of projectiles and sputtering of nanoparticles were calculated at various times. The results were found to be relative to the nanoparticle size and projectile energy. The projectile energy of 100 eV contributes to the largest retention of helium atoms in tungsten nanoparticles. The most obvious difference in reflection exists in the range of 3-10 keV. Around 66% of sputtering atoms is in forward direction for projectiles with incident energy higher than 10 keV. Moreover, the axial direction of the nanoparticles was demonstrated to influence the bombardment to some degree.

Si exfoliation by MeV proton implantation

International Nuclear Information System (INIS)

Braley, Carole; Mazen, Frédéric; Tauzin, Aurélie; Rieutord, François; Deguet, Chrystel; Ntsoenzok, Esidor

2012-01-01

Proton implantation in silicon and subsequent annealing are widely used in the Smart Cut™ technology to transfer thin layers from a substrate to another. The low implantation energy range involved in this process is usually from a few ten to a few hundred of keV, which enables the separation of up to 2 μm thick layers. New applications in the fields of 3D integration and photovoltaic wafer manufacturing raise the demand for extending this technology to higher energy in order to separate thicker layer from a substrate. In this work, we propose to investigate the effect of proton implantation in single crystalline silicon in the 1–3 MeV range which corresponds to a 15–100 μm range for the hydrogen maximum concentration depth. We show that despites a considerably lower hydrogen concentration at R p , the layer separation is obtained with fluence close to the minimum fluence required for low energy implantation. It appears that the fracture propagation in Si and the resulting surface morphology is affected by the substrate orientation. Defects evolution is investigated with Fourier Transform Infrared Spectroscopy. The two orientations reveal similar type of defects but their evolution under annealing appears to be different.

Proton transport in additives to the polymer electrolyte membrane for fuel cell application

Energy Technology Data Exchange (ETDEWEB)

Toelle, Pia

2011-03-21

The enhancement of proton transport in polymer electrolyte membranes is an important issue for the development of fuel cell technology. The objective is a material providing proton transport at a temperature range of 350 K to 450 K independent from a purely water based mechanism. To enhance the PEM properties of standard polymer materials, a class of additives is studied by means of atomistic simulations consisting of functionalised mesoporous silicon dioxide particles. The functional molecules are imidazole or sulphonic acid, covalently bound to the surface via a carbon chain with a surface density of about 1.0 nm{sup -2} groups. At first, the proton transport mechanism is explored in a system of functional molecules in vacuum. The molecules are constrained by the terminal carbon groups according to the geometric arrangement in the porous silicon dioxide. The proton transport mechanism is characterised by structural properties obtained from classical molecular dynamics simulations and consists of the aggregation of two or more functional groups, a barrier free proton transport between these groups followed by the separation of the groups and formation of new aggregates due to fluctuations in the hydrogen bond network and movement of the carbon chain. For the different proton conducting groups, i.e. methyl imidazole, methyl sulphonic acid and water, the barrier free proton transport and the formation of protonated bimolecular complexes were addressed by potential energy calculations of the density functional based tight binding method (DFTB). For sulphonic acid even at a temperature of 450 K, relatively stable aggregates are formed, while most imidazole groups are isolated and the hydrogen bond fluctuations are high. However, high density of groups and elevated temperatures enhance the proton transport in both systems. Besides the anchorage and the density of the groups, the influence of the chemical environment on the proton transport was studied. Therefore, the

Investigation of /sup 16/O+/sup 27/Al reaction at bombarding energies below 5. 3 MeV/A

Energy Technology Data Exchange (ETDEWEB)

Wen-Qing, Shen; Yong-Tai, Zhu; Wen-Long, Zhan; Zhong-Yan, Guo; Shu-Zhi, Yin; Wei-Min, Qiao; En-Chiu, Wu

1987-03-01

Quasi elastic and deep inelastic collision induced by /sup 16/O+/sup 27/Al at the bombarding energies below 5.3 MeV/A have been studied in detail. Experimental angular energy atomic charge distribution and contour plots of the differential cross sections d/sup 3/sigma/dEd..cap omega..dZ on E-theta plan are presented, their evolution with the bombarding energies are analysed. The competion between quasi elastic and deep inelastic collision as a functon of the bombarding energies has been discussed.

Deep Proton Writing for the rapid prototyping of polymer micro-components for optical interconnects and optofluidics

Science.gov (United States)

Van Erps, Jürgen; Vervaeke, Michael; Ottevaere, Heidi; Hermanne, Alex; Thienpont, Hugo

2013-07-01

The use of photonics in data communication and numerous other industrial applications brought plenty of prospects for innovation and opened up different unexplored market opportunities. This is a major driving force for the fabrication of micro-optical and micro-mechanical structures and their accurate alignment and integration into opto-mechanical modules and systems. To this end, we present Deep Proton Writing (DPW) as a powerful rapid prototyping technology for such micro-components. The DPW process consists of bombarding polymer samples (PMMA or SU-8) with swift protons, which results after chemical processing steps in high-quality micro-optical components. One of the strengths of the DPW micro-fabrication technology is the ability to fabricate monolithic building blocks that include micro-optical and mechanical functionalities which can be precisely integrated into more complex photonic systems. In this paper we comment on how we shifted from using 8.3 to 16.5 MeV protons for DPW and give some examples of micro-optical and micro-mechanical components recently fabricated through DPW, targeting applications in optical interconnections and in optofluidics.

Deep Proton Writing for the rapid prototyping of polymer micro-components for optical interconnects and optofluidics

Energy Technology Data Exchange (ETDEWEB)

Van Erps, Jürgen, E-mail: jurgen.van.erps@vub.ac.be; Vervaeke, Michael; Ottevaere, Heidi; Hermanne, Alex; Thienpont, Hugo

2013-07-15

The use of photonics in data communication and numerous other industrial applications brought plenty of prospects for innovation and opened up different unexplored market opportunities. This is a major driving force for the fabrication of micro-optical and micro-mechanical structures and their accurate alignment and integration into opto-mechanical modules and systems. To this end, we present Deep Proton Writing (DPW) as a powerful rapid prototyping technology for such micro-components. The DPW process consists of bombarding polymer samples (PMMA or SU-8) with swift protons, which results after chemical processing steps in high-quality micro-optical components. One of the strengths of the DPW micro-fabrication technology is the ability to fabricate monolithic building blocks that include micro-optical and mechanical functionalities which can be precisely integrated into more complex photonic systems. In this paper we comment on how we shifted from using 8.3 to 16.5 MeV protons for DPW and give some examples of micro-optical and micro-mechanical components recently fabricated through DPW, targeting applications in optical interconnections and in optofluidics.

Advanced applications in microphotonics using proton beam writing

International Nuclear Information System (INIS)

Bettiol, A.A.; Chiam, S.Y.; Teo, E.J.; Udalagama, C.; Chan, S.F.; Hoi, S.K.; Kan, J.A. van; Breese, M.B.H.; Watt, F.

2009-01-01

Proton beam writing (PBW) is a powerful tool for prototyping microphotonic structures in a wide variety of materials including polymers, insulators, semiconductors and metals. Prototyping is achieved either through direct fabrication with the proton beam, or by the fabrication of a master that can be used for replication. In recent times we have explored the use of PBW for various advanced optical applications including fabrication of subwavelength metallic structures and metamaterials, direct write of silicon waveguides for mid IR applications and integrated waveguides for lab-on-a-chip devices. This paper will review the recent progress made in these areas with particular emphasis on the main advantages of using the PBW technique for these novel applications.

Stable transformation of the oomycete, Phytophthora infestans, using microprojectile bombardment

DEFF Research Database (Denmark)

Cvitanich, Cristina; Judelson, Howard S.

2003-01-01

Germinated asexual sporangia, zoospores, and mycelia of Phytophthora infestans were transformed to G418-resistance by microprojectile bombardment. After optimization, an average of 14 transformants/shot were obtained, using 10(6) germinated sporangia and gold particles coated with 1 microg...

Damage and redistribution of impurities by ionic bombardment

International Nuclear Information System (INIS)

Tognetti, N.P.

1982-01-01

Some aspects of displacement collisions in solids bombarded with ions in the medium energy range have been studied using the backscattering and channelling techniques. The production of lattice damage and the spatial redistribution of atoms within the collision cascade were the two main effects considered and experimentally studied. A comprehensive study of disorder production in GaAs was carried out at 40 K for a variety of ions and ion energies, providing insight into the mechanisms of damage generation from both the macro and microscopic points of view. Experiments on thermal recovery of partially disordered substrates revealed that annealing occurs from approximately 100 K to 300 K. A direct procedure developed for the obtainment of damage profiles from backscattering-channelling measurements is described. The net spatial redistribution of displaced atoms, in combined impurity-matrix substrates was studied and compared with existing theories of ion beam mixing. The Ag-Si system was studied for a wide range of fluence of bombarding Ar + ions. Furthermore, the contribution of atomic mixing in the experimental observation of Ge implantation at high doses into Si is discussed. (M.E.L) [es

Flaking and blistering on He and Ne bombardments

International Nuclear Information System (INIS)

Kamada, K.; Naramoto, H.

1979-01-01

Large scale exfoliation formed by 300 keV He + bombardment of niobium without any preceding blistering is investigated, in comparison with the blistering due to 450 and 850 keV Ne + bombardments. In-situ observations of the erosion processes were performed in a scanning electron microscope connected to the Van de Graaff. Critical doses of 7.2 x 10 17 He + /cm 2 , 2.4 x 10 17 Ne + /cm 2 and 4.0 x 10 17 Ne + /cm 2 were obtained for the 300 keV He flaking, 450 keV Ne blistering and 850 keV Ne blistering, respectively. The He flaking was presumed to be due to brittle fashion peeling-off of the surface layer by the bending moment driven by the internal gas pressure. The blistering, on the other hand, was presumed to be the result of the ductile fashion spreading of the lenticular bubble in the sub-surface layer. The necessary pressure for the peeling-off of the cover was calculated, and was speculated to be able to work as the driving force for the flaking from its unexpectedly low values. Fractographies under the exfoliations were discussed for both flaking and blistering. (author)

Radiation damage and annealing of lithium-doped silicon solar cells

Science.gov (United States)

Statler, R. L.

1971-01-01

Evidence has been presented that a lithium-diffused crucible-grown silicon solar cell can be made with better efficiency than the flight-quality n p 10 ohms-cm solar cell. When this lithium cell is exposed to a continuous radiation evironment at 60 C (electron spectrum from gamma rays) it has a higher power output than the N/P cell after a fluence equivalent to 1 MeV. A comparison of annealing of proton- and electron-damage in this lithium cell reveals a decidedly faster rate of recovery and higher level of recoverable power from the proton effects. Therefore, the lithium cell shows a good potential for many space missions where the proton flux is a significant fraction of the radiation field to be encountered.

The future plan for the applications of RI produced in the proton-induced spallation-reaction

Energy Technology Data Exchange (ETDEWEB)

Ikezoe, Hiroshi [Japan Atomic Energy Research Inst., Tokai, Ibaraki (Japan). Tokai Research Establishment

1997-07-01

A plan of research facilities (transmutations of minor actinides and neutron scattering for material and life sciences) has been proposed in JAERI. This plan is based on a proton lineac with an energy of 1.5 GeV and a beam current of several mA. Among these facilities, we are planning to accelerate neutron-rich radioactive nuclei (RI) produced in the fission and spallation reactions of thorium or uranium bombarded by the intense high energy proton beams. The RI produced in an ion source are separated by a high resolution isotope separator and their charge states are changed to be negative to inject into the existing tandem-booster accelerator. Main purpose of this plan is to study the nuclear and chemical properties of neutron rich transactinium elements not yet synthesized and the nuclear structures of neutron rich nuclei far from the nuclear stability line. (author)

On the reasons for bombarding uranium with slow neutrons

International Nuclear Information System (INIS)

Xu Diyu

1997-01-01

Form the concepts of slow neutrons, the binding energy and the excitation energy of complex nuclei, and the activation energy in nuclear fission, the four reasons for bombarding uranium with slow neutrons are summed up. Not only the reasons for uranium fission are brought in light, but also the micromechanism is dealt with

ATLAS Forward Proton (AFP) time-of-flight (ToF) detector: construction & existing experiences

CERN Document Server

Sykora, Tomas; The ATLAS collaboration

2018-01-01

In 2017 the ATLAS collaboration successfully completed the installation of the ATLAS Forward Proton (AFP) detector to measure diffractive protons leaving under very small angles (hundreds of micro radians) the ATLAS proton-proton interaction point. The AFP tags and measures forward protons scattered in single diffraction or hard central diffraction, where two protons are emitted and a central system is created. In addition, the AFP has a potential to measure two-photon exchange processes, and to be sensitive to eventual anomalous quartic couplings of Vector Bosons: γγW+W−, γγZZ, and γγγγ. Such measurements at high luminosities will be possible only due the combination of high resolution tracking (semi-edgeless 3D Silicon pixel) detectors and ultra-high precision ToF (Quartz-Cherenkov) detectors at both sides of the ATLAS detector. The ToF detector construction and experiences with its operation represent the subject of the talk.

Spallation Neutron Spectrum on a Massive Lead/Paraffin Target Irradiated with 1 GeV Protons

CERN Document Server

Adam, J; Barashenkov, V S; Brandt, R; Golovatiouk, V M; Kalinnikov, V G; Katovsky, K; Krivopustov, M I; Kumar, V; Kumawat, H; Odoj, R; Pronskikh, V S; Solnyshkin, A A; Stegailov, V I; Tsoupko-Sitnikov, V M; Westmeier, W

2004-01-01

The spectra of gamma-ray emitted by decaying residual nuclei, produced by spallation neutrons with (n, xn), (n,xnyp), (n,p), (n,gamma) reactions in activation threshold detectors - namely, ^{209}Bi, ^{197}Au, ^{59}Co, ^{115}In, ^{232}Th, were measured in the Laboratory of Nuclear Problems (LNP), JINR, Dubna, Russia. Spallation neutrons were generated by bombarding a 20 cm long cylindrical lead target, 8 cm in diameter, surrounded by a 6 cm thick layer of paraffin moderator, with a 1 GeV proton beam from the Nuclotron accelerator. Reaction rates and spallation neutron spectrum were measured and compared with CASCADE code calculations.

Spatial distributions of dose enhancement around a gold nanoparticle at several depths of proton Bragg peak

Energy Technology Data Exchange (ETDEWEB)

Kwon, Jihun [Department of Radiation Oncology, Hokkaido University Graduate School of Medicine, Hokkaido University (Japan); Sutherland, Kenneth [Department of Medical Physics, Hokkaido University Graduate School of Medicine, Hokkaido University (Japan); Hashimoto, Takayuki [Department of Radiation Medicine, Hokkaido University Graduate School of Medicine (Japan); Shirato, Hiroki [Department of Radiation Medicine, Hokkaido University Graduate School of Medicine and Global Station for Quantum Medical Science and Engineering, Global Institution for Collaborative Research and Education (GI-CoRE), Hokkaido University (Japan); Date, Hiroyuki, E-mail: date@hs.hokudai.ac.jp [Faculty of Health Sciences, Hokkaido University (Japan)

2016-10-01

Gold nanoparticles (GNPs) have been recognized as a promising candidate for a radiation sensitizer. A proton beam incident on a GNP can produce secondary electrons, resulting in an enhancement of the dose around the GNP. However, little is known about the spatial distribution of dose enhancement around the GNP, especially in the direction along the incident proton. The purpose of this study is to determine the spatial distribution of dose enhancement by taking the incident direction into account. Two steps of calculation were conducted using the Geant4 Monte Carlo simulation toolkit. First, the energy spectra of 100 and 195 MeV protons colliding with a GNP were calculated at the Bragg peak and three other depths around the peak in liquid water. Second, the GNP was bombarded by protons with the obtained energy spectra. Radial dose distributions were computed along the incident beam direction. The spatial distributions of the dose enhancement factor (DEF) and subtracted dose (D{sub sub}) were then evaluated. The spatial DEF distributions showed hot spots in the distal radial region from the proton beam axis. The spatial D{sub sub} distribution isotropically spread out around the GNP. Low energy protons caused higher and wider dose enhancement. The macroscopic dose enhancement in clinical applications was also evaluated. The results suggest that the consideration of the spatial distribution of GNPs in treatment planning will maximize the potential of GNPs.

Electron spin resonance signal from a tetra-interstitial defect in silicon

CERN Document Server

Mchedlidze, T

2003-01-01

The Si-B3 electron spin resonance (ESR) signal from agglomerates of self-interstitials was detected for the first time in hydrogen-doped float-zone-grown silicon samples subjected to annealing after electron irradiation. Previously this signal had been detected only in neutron- or proton-irradiated silicon samples. The absence of obscuring ESR peaks for the investigated samples at applied measurement conditions allowed an investigation of the hyperfine structure of the Si-B3 spectra. The analysis supports assignment of a tetra-interstitial defect as the origin of the signal.

Emission of positive oxygen ions from ion bombardment of adsorbate-covered metal surfaces

International Nuclear Information System (INIS)

Kaurin, M.G.

1989-01-01

During ion bombardment of metal surfaces, collision cascades can result in the emission of sputtered secondary ions. Recent experiments, however, have suggested that the emission of positive ions of electronegative adsorbates can result from electronic processes rather than from processes involving elastic collisions. This dissertation presents the results of experiments studying the emission of positive oxygen ions from oxygen- and carbon-monoxide-covered transition metal surfaces during bombardment by 25-250 keV ions of neon, argon, and krypton. The systems studied may be grouped into four categories. For a nickel substrate with adsorbed oxygen, the emission of positive oxygen ions proceeds through collision cascades. For titanium and niobium with adsorbed oxygen, the emission of positive oxygen ions is proportional to the primary ion velocity, consistent with emission from electronic processes; for a given primary ion velocity, the oxygen ion yield is independent of primary ion species. For substrates of molybdenum and tungsten, the oxygen yield is proportional to primary ion velocity, but the yield also depends on the primary ion species for a given primary ion velocity in a manner that is consistent with emission resulting from electronic processes. For these two groups, except for titanium, the yields during neon ion bombardment do not extrapolate (assuming linearity with primary ion velocity) to a nonzero value at zero beam velocity. The magnitude of the oxygen ion yields from these targets is not consistent with that expected if the emission were induced by secondary electrons emitted during the ion bombardment

Studies for the Commissioning of the CERN CMS Silicon Strip Tracker

CERN Document Server

Bloch, Christoph; Abbaneo, Duccio; Fabjan, Christian Wolfgang

2008-01-01

In 2008 the Large Hadron Collider (LHC) at CERN will start producing proton-proton collisions of unprecedented energy. One of its main experiments is the Compact Muon Solenoid (CMS), a general purpose detector, optimized for the search of the Higgs boson and super symmetric particles. The discovery potential of the CMS detector relies on a high precision tracking system, made of a pixel detector and the largest silicon strip Tracker ever built. In order to operate successfully a device as complex as the CMS silicon strip Tracker, and to fully exploit its potential, the properties of the hardware need to be characterized as precisely as possible, and the reconstruction software needs to be commissioned with physics signals. A number of issues were identified and studied to commission the detector, some of which concern the entire Tracker, while some are specific to the Tracker Outer Barrel (TOB): - the time evolution of the signals in the readout electronics need to be precisely measured and correctly simulate...

Ion bombardment simulation: a review related to fusion radiation damage

International Nuclear Information System (INIS)

Brimhall, J.L.

1975-01-01

Prime emphasis is given to reviewing the ion bombardment data on the refractory metals molybdenum, niobium and vanadium which have been proposed for use in advanced fusion devices. The temperature and dose dependence of the void parameters are correlated among these metals. The effect of helium and hydrogen gas on the void parameters is also included. The similarities and differences of the response of these materials to high dose, high temperature radiation damage are evaluated. Comparisons are made with results obtained from stainless steel and nickel base alloys. The ion bombardment data is then compared and correlated, as far as possible, with existing neutron data on the refractory metals. The theoretically calculated damage state produced by neutrons and ions is also briefly discussed and compared to experimental data wherever possible. The advantages and limitations of ion simulation in relation to fusion radiation damage are finally summarized

Observation of high energy electrons and protons in the South Atlantic geomagnetic anomaly by Ohzora Satellite

International Nuclear Information System (INIS)

Nagata, K.; Murakami, H.; Nakamoto, A.; Hasebe, N.; Kikuche, J.; Doke, T.

1988-01-01

Observed results of the high energy electrons (0.19 - 3.2 MeV) and protons (0.58 - 35 MeV) of the South Atlantic Geomagnetic Anomaly are presented. Two silicon Δ E-E telescopes on the ohzora satellite (EXOS-C, 1984-15A) were used to observe the high energy particle and the maximum intensity of electrons and protons. The powers of energy spectra above 1 MeV have different values from energy region below 1 MeV. The electron and proton intensities are greatest at pitch angle maximized at 90 0 . (author) [pt

Surface damage studies of ETFE polymer bombarded with low energy Si ions (≤100 keV)

International Nuclear Information System (INIS)

Minamisawa, Renato Amaral; Almeida, Adelaide De; Budak, Satilmis; Abidzina, Volha; Ila, Daryush

2007-01-01

Surface studies of ethylenetetrafluoroethylene (ETFE), bombarded with Si in a high-energy tandem Pelletron accelerator, have recently been reported. Si ion bombardment with a few MeV to a few hundred keV energies was shown to be sufficient to produce damage on ETFE film. We report here the use of a low energy implanter with Si ion energies lower than 100 keV, to induce changes on ETFE films. In order to determine the radiation damage, ETFE bombarded films were simulated with SRIM software and analyzed with optical absorption photometry (OAP), Raman and Fourier transform infrared-attenuated total reflectance (FTIR-ATR) spectroscopy to show quantitatively the physical and chemical property changes. Carbonization occurs following higher dose implantation, and hydroperoxides were formed following dehydroflorination of the polymer

Actinide production in 136Xe bombardments of 249Cf

International Nuclear Information System (INIS)

Gregorich, K.E.

1985-08-01

The production cross sections for the actinide products from 136 Xe bombardments of 249 Cf at energies 1.02, 1.09, and 1.16 times the Coulomb barrier were determined. Fractions of the individual actinide elements were chemically separated from recoil catcher foils. The production cross sections of the actinide products were determined by measuring the radiations emitted from the nuclides within the chemical fractions. The chemical separation techniques used in this work are described in detail, and a description of the data analysis procedure is included. The actinide production cross section distributions from these 136 Xe + 249 Cf bombardments are compared with the production cross section distributions from other heavy ion bombardments of actinide targets, with emphasis on the comparison with the 136 Xe + 248 Cm reaction. A technique for modeling the final actinide cross section distributions has been developed and is presented. In this model, the initial (before deexcitation) cross section distribution with respect to the separation energy of a dinuclear complex and with respect to the Z of the target-like fragment is given by an empirical procedure. It is then assumed that the N/Z equilibration in the dinuclear complex occurs by the transfer of neutrons between the two participants in the dinuclear complex. The neutrons and the excitation energy are statistically distributed between the two fragments using a simple Fermi gas level density formalism. The resulting target-like fragment initial cross section distribution with respect to Z, N, and excitation energy is then allowed to deexcite by emission of neutrons in competition with fission. The result is a final cross section distribution with respect to Z and N for the actinide products. 68 refs., 33 figs., 6 tabs

Investigating fusion plasma instabilities in the Mega Amp Spherical Tokamak using mega electron volt proton emissions (invited)

Energy Technology Data Exchange (ETDEWEB)

Perez, R. V., E-mail: rvale006@fiu.edu; Boeglin, W. U.; Angulo, A.; Avila, P.; Leon, O.; Lopez, C. [Department of Physics, Florida International University, 11200 SW 8 ST, CP204, Miami, Florida 33199 (United States); Darrow, D. S. [Princeton Plasma Physics Laboratory, James Forrestal Campus, P.O. Box 451, Princeton, New Jersey 08543 (United States); Cecconello, M.; Klimek, I. [Department of Physics and Astronomy, Uppsala University, Uppsala SE-751 20 (Sweden); Allan, S. Y.; Akers, R. J.; Keeling, D. L.; McClements, K. G.; Scannell, R.; Conway, N. J. [CCFE, Culham Science Centre, Abingdon, Oxfordshire OX14 3DB (United Kingdom); Turnyanskiy, M. [ITER Physics Department, EFDA CSU Garching, Boltzmannstrasse 2, D-85748, Garching (Germany); Jones, O. M. [CCFE, Culham Science Centre, Abingdon, Oxfordshire OX14 3DB (United Kingdom); Department of Physics, Durham University, Durham DH1 3LE (United Kingdom); Michael, C. A. [Australian National University, Canberra ACT 0200 (Australia)

2014-11-15

The proton detector (PD) measures 3 MeV proton yield distributions from deuterium-deuterium fusion reactions within the Mega Amp Spherical Tokamak (MAST). The PD’s compact four-channel system of collimated and individually oriented silicon detectors probes different regions of the plasma, detecting protons (with gyro radii large enough to be unconfined) leaving the plasma on curved trajectories during neutral beam injection. From first PD data obtained during plasma operation in 2013, proton production rates (up to several hundred kHz and 1 ms time resolution) during sawtooth events were compared to the corresponding MAST neutron camera data. Fitted proton emission profiles in the poloidal plane demonstrate the capabilities of this new system.

Model to estimate fractal dimension for ion-bombarded materials

Energy Technology Data Exchange (ETDEWEB)

Hu, A., E-mail: hu77@purdue.edu; Hassanein, A.

2014-03-15

Comprehensive fractal Monte Carlo model ITMC-F (Hu and Hassanein, 2012 [1]) is developed based on the Monte Carlo ion bombardment simulation code, i.e., Ion Transport in Materials and Compounds (ITMC) code (Hassanein, 1985 [2]). The ITMC-F studies the impact of surface roughness on the angular dependence of sputtering yield. Instead of assuming material surfaces to be flat or composed of exact self-similar fractals in simulation, we developed a new method to describe the surface shapes. Random fractal surfaces which are generated by midpoint displacement algorithm and support vector machine algorithm are combined with ITMC. With this new fractal version of ITMC-F, we successfully simulated the angular dependence of sputtering yield for various ion-target combinations, with the input surface roughness exponent directly depicted from experimental data (Hu and Hassanein, 2012 [1]). The ITMC-F code showed good agreement with the experimental data. In advanced, we compare other experimental sputtering yield with the results from ITMC-F to estimate the surface roughness exponent for ion-bombarded material in this research.

High-energy and high-fluence proton irradiation effects in silicon solar cells

International Nuclear Information System (INIS)

Yamaguchi, M.; Taylor, S.J.; Yang, M.; Matsuda, S.; Kawasaki, O.; Hisamatsu, T.

1996-01-01

We have examined proton irradiation damage in high-energy (1 endash 10 MeV) and high-fluence (approx-gt 10 13 cm -2 ) Si n + -p-p + structure space solar cells. Radiation testing has revealed an anomalous increase in short-circuit current I sc followed by an abrupt decrease and cell failure, induced by high-fluence proton irradiation. We propose a model to explain these phenomena by expressing the change in carrier concentration p of the base region as a function of the proton fluence in addition to the well-known model where the short-circuit current is decreased by minority-carrier lifetime reduction after irradiation. The reduction in carrier concentration due to majority-carrier trapping by radiation-induced defects has two effects. First, broadening of the depletion layer increases both the generation endash recombination current and also the contribution of the photocurrent generated in this region to the total photocurrent. Second, the resistivity of the base layer is increased, resulting in the abrupt decrease in the short circuit current and failure of the solar cells. copyright 1996 American Institute of Physics

Radiation Damage Studies of Silicon Photomultipliers

CERN Document Server

Bohn, P; Hazen, E.; Heering, A.; Rohlf, J.; Freeman, J.; Los, Sergey V.; Cascio, E.; Kuleshov, S.; Musienko, Y.; Piemonte, C.

2008-01-01

We report on the measurement of the radiation hardness of silicon photomultipliers (SiPMs) manufactured by Fondazione Bruno Kessler in Italy (1 mm$^2$ and 6.2 mm$^2$), Center of Perspective Technology and Apparatus in Russia (1 mm$^2$ and 4.4 mm$^2$), and Hamamatsu Corporation in Japan (1 mm$^2$). The SiPMs were irradiated using a beam of 212 MeV protons at Massachusetts General Hospital, receiving fluences of up to $3 \\times 10^{10}$ protons per cm$^2$ with the SiPMs at operating voltage. Leakage currents were read continuously during the irradiation. The delivery of the protons was paused periodically to record scope traces in response to calibrated light pulses to monitor the gains, photon detection efficiencies, and dark counts of the SiPMs. The leakage current and dark noise are found to increase with fluence. Te leakage current is found to be proportional to the mean square deviation of the noise distribution, indicating the dark counts are due to increased random individual pixel activation, while SiPM...

Bombardment-induced compositional change with alloys, oxides, and oxysalts. 1

International Nuclear Information System (INIS)

Kelly, R.

1989-01-01

A review of the role of surface binding energies in bombardment-induced compositional change with alloys, oxides and oxysalts is presented. The concepts of preferential sputtering and compositional change may or may not coincide; their differences are clarified. 77 refs.; 12 figs.; 4 tabs

Proposals for the heating mechanism of an electron-bombarded body

International Nuclear Information System (INIS)

Geller, R.; Yerouchalmi, F.

1967-01-01

When a thermally isolated target in vacuum is bombarded by an electron beam the target becomes red. In this paper we try a heuristic explanation indicating how the kinetic power of the beam may be transformed into radiation power controlled by Stefan law. (authors) [fr

Accelerator production of 99mTc with proton beams and enriched 100Mo targets

International Nuclear Information System (INIS)

Lagunas-Solar, M.C.

1999-01-01

The direct production of 99m Tc has been developed based upon the use of the 100 Mo(p,2n) 99m Tc reaction (Q= -7.9 MeV), using enriched 100 Mo targets and accelerated protons of 99m Tc yields measured in this work reached 851 ± 77 MBq/μA/h (23.0 ± 3.0 mCi/μA/h) at end-of-bombardment (EOB) in the 22-12 MeV energy region, with 96 Tc (4.35 d) as the only detectable impurity at - accelerators, and by extracting multiple H + beams to bombard a single or an array of enriched 100 Mo targets, this method could provide nearly 851 GBq (23 Ci) of 99m Tc in 1-h bombardments. Because of this large-batch potential, this new method appears to be an effective alternative to the production and distribution of 99 Mo → 99m Tc generator systems, although it may be limited to daily, regional/local distribution and use. 99m Tc produced in this fashion has high radionuclidic and radiochemical purity, although its specific activity has not been determined. The accelerator-made 99m Tc has been shown to have similar physical and chemical characteristics than 99m Tc eluted from commercial fission-produced 99 Mo → 99m Tc generators. Technical and logistical factors need further study and analysis but the potential and the expected impact of this new method are clear in the context of the operation of large radionuclide distribution centers as well as for small programs in developing regions. (author)

Chemical and structural properties of polymorphous silicon thin films grown from dichlorosilane

Energy Technology Data Exchange (ETDEWEB)

Álvarez-Macías, C.; Monroy, B.M.; Huerta, L.; Canseco-Martínez, M.A. [Instituto de Investigaciones en Materiales, Universidad Nacional Autónoma de México, A.P. 70-360, Coyoacán, C.P. 04510 México, D.F. (Mexico); Picquart, M. [Departamento de Física, Universidad Autónoma Metropolitana, Iztapalapa, A.P. 55-534, 09340 México, D.F. (Mexico); Santoyo-Salazar, J. [Departamento de Física, CINVESTAV-IPN, A.P. 14-740, C.P. 07000 México, D.F. (Mexico); Sánchez, M.F. García [Unidad Profesional Interdisciplinaria en Ingeniería y Tecnologías Avanzadas, Instituto Politécnico Nacional, Av. I.P.N. 2580, Gustavo A. Madero, 07340 México .D.F. (Mexico); Santana, G., E-mail: gsantana@iim.unam.mx [Instituto de Investigaciones en Materiales, Universidad Nacional Autónoma de México, A.P. 70-360, Coyoacán, C.P. 04510 México, D.F. (Mexico)

2013-11-15

We have examined the effects of hydrogen dilution (R{sub H}) and deposition pressure on the morphological, structural and chemical properties of polymorphous silicon thin films (pm-Si:H), using dichlorosilane as silicon precursor in the plasma enhanced chemical vapor deposition (PECVD) process. The use of silicon chlorinated precursors enhances the crystallization process in as grown pm-Si:H samples, obtaining crystalline fractions from Raman spectra in the range of 65–95%. Atomic Force Microscopy results show the morphological differences obtained when the chlorine chemistry dominates the growth process and when the plasma–surface interactions become more prominent. Augmenting R{sub H} causes a considerable reduction in both roughness and topography, demonstrating an enhancement of ion bombardment and attack of the growing surface. X-ray Photoelectron Spectroscopy results show that, after ambient exposure, there is low concentration of oxygen inside the films grown at low R{sub H}, present in the form of Si-O, which can be considered as structural defects. Instead, oxidation increases with deposition pressure and dilution, along with film porosity, generating a secondary SiO{sub x} phase. For higher pressure and dilution, the amount of chlorine incorporated to the film decreases congruently with HCl chlorine extraction processes involving atomic hydrogen interactions with the surface. In all cases, weak silicon hydride (Si-H) bonds were not detected by infrared spectroscopy, while bonding configurations associated to the silicon nanocrystal surface were clearly observed. Since these films are generally used in photovoltaic devices, analyzing their chemical and structural properties such as oxygen incorporation to the films, along with chlorine and hydrogen, is fundamental in order to understand and optimize their electrical and optical properties.

Radiation Damage in Silicon Detectors Caused by Hadronic and Electromagnetic Irradiation

CERN Document Server

Fretwurst, E.; Stahl, J.; Pintilie, I.

2002-01-01

The report contains various aspects of radiation damage in silicon detectors subjected to high intensity hadron and electromagnetic irradiation. It focuses on improvements for the foreseen LHC applications, employing oxygenation of silicon wafers during detector processing (result from CERN-RD48). An updated survey on hadron induced damage is given in the first article. Several improvements are outlined especially with respect to antiannealing problems associated with detector storage during LHC maintenance periods. Open questions are outlined in the final section, among which are a full understanding of differences found between proton and neutron induced damage, process related effects changing the radiation tolerance in addition to the oxygen content and the lack of understanding the changed detector properties on the basis of damage induced point and cluster defects. In addition to float zone silicon, so far entirely used for detector fabrication,Czochralski silicon was also studied and first promising re...

Effects of low-energy ion beam bombardment on metal oxides

International Nuclear Information System (INIS)

Sullivan, J.L.; Saied, S.O.; Choudhury, T.

1993-01-01

This paper describes a study of Ar ion bombardment damage in metal oxides. In the energy range 1 to 5 keV, preferential oxygen removal and reduction of the oxides was found to depend on ion current density, but to be independent of beam energy. (author)

Proton capture reactions and nuclear structure

International Nuclear Information System (INIS)

Kikstra, S.W.

1989-01-01

Experimental studies are described of the structure of 40 Ca and 42 Sc with measurements at proton-capture of (p, gamma) reactions. Where possible, an attempt has been made to interpret the results of the measurements in termsof existing models. The 40 Ca and 42 Sc nuclides were excited by bombarding 39 K and 41 Ca targets, respectively with low energy protons (E p = 0.3-3.0 MeV), that were produced by the Utrecht 3MV van de Graaff accelerator. From the measured energy and intensity of the gamma-rays created in the subsequent decay of the cuclei, information was obtained on the existence and properties of their excited states. In addition properties of two T = 3/2 levels at high excitation energy of the 9 Be nucleus were investigated. These levels were excited by the resonant absorption of gamma-rays from the 11 B(p, gamma) 12 C reaction. The results of the measurements are interpreted by a comparison to the analoque β-decay of 9 Li and to shell model calculations. The total decay energy of the superallowed O + → O + transition between the ground states of 42 Sc and 42 Ca was determined by measurements in Utrecht of the proton separation energy S p of 42 Sc and in Oak Ridge of S n of 42 Sc and 42 Ca. The results were used for verification of the conserved vector current hypothesis, which implies that the ft values of all superallowed O + → O + β-decays are the same. An attempt was made to describe properties of odd-parity states of A = 37-41 nuclei with a variant of the Warburton, Becker, Millener and Brown (WBMB) interaction.Finally a new method for the assignment of nuclear spins by a simple statistical analysis of spectroscopic information is proposed. (author). 169 refs.; 22 figs.; 24 schemes; 29 tabs

Beam test performance and simulation of prototypes for the ALICE silicon pixel detector

International Nuclear Information System (INIS)

Conrad, J.; Anelli, G.; Antinori, F.

2007-01-01

The silicon pixel detector (SPD) of the ALICE experiment in preparation at the Large Hadron Collider (LHC) at CERN is designed to provide the precise vertex reconstruction needed for measuring heavy flavor production in heavy ion collisions at very high energies and high multiplicity. The SPD forms the innermost part of the Inner Tracking System (ITS) which also includes silicon drift and silicon strip detectors. Single assembly prototypes of the ALICE SPD have been tested at the CERN SPS using high energy proton/pion beams in 2002 and 2003. We report on the experimental determination of the spatial precision. We also report on the first combined beam test with prototypes of the other ITS silicon detector technologies at the CERN SPS in November 2004. The issue of SPD simulation is briefly discussed

Low-energy ion beam bombardment effect on the plant-cell-envelope mimetic membrane for DNA transfer

International Nuclear Information System (INIS)

Prakrajang, K.; Sangwijit, K.; Anuntalabhochai, S.; Wanichapichart, P.; Yu, L.D.

2012-01-01

This study is a systematic analysis of the mechanisms involved in ion-beam induced DNA transfer, an important application of ion beam biotechnology. Cellulose membranes were used to mimic the plant cell envelope. Ion beams of argon (Ar) or nitrogen (N) at an energy of 25 keV bombarded the cellulose membranes at fluences ranging from 10 15 to 10 16 ions/cm 2 . The damage to the ion-beam-bombarded membranes was characterized using infrared spectroscopy, a micro tensile test and scanning electron microscopy (SEM). Chain scission was the dominant radiation damage type in the membrane. DNA diffusion across the membrane was significantly increased after ion beam bombardment. The increase in DNA transfer is therefore attributed to chain scission, which increases the permeability by increasing the number of pores in the membrane.

Preparation and characterization of self-crosslinked organic/inorganic proton exchange membranes

Science.gov (United States)

Zhong, Shuangling; Cui, Xuejun; Dou, Sen; Liu, Wencong

A series of silicon-containing sulfonated polystyrene/acrylate (Si-sPS/A) nanoparticles are successfully synthesized via simple emulsion polymerization method. The Si-sPS/A latexes show good film-forming capability and the self-crosslinked organic/inorganic proton exchange membranes are prepared by pouring the Si-sPS/A nanoparticle latexes into glass plates and drying at 60 °C for 10 h and 120 °C for 2 h. The potential of the membranes in direct methanol fuel cells (DMFCs) is characterized preliminarily by studying their thermal stability, ion-exchange capacity, water uptake, methanol diffusion coefficient, proton conductivity and selectivity (proton conductivity/methanol diffusion coefficient). The results indicate that these membranes possess excellent thermal stability and methanol barrier due to the existence of self-crosslinked silica network. In addition, the proton conductivity of the membranes is in the range of 10 -3-10 -2 S cm -1 and all the membranes show much higher selectivity in comparison with Nafion ® 117. These results suggest that the self-crosslinked organic/inorganic proton exchange membranes are particularly promising in DMFC applications.

Monte Carlo characterisation of the Dose Magnifying Glass for proton therapy quality assurance

International Nuclear Information System (INIS)

Merchant, A H; Guatelli, S; Petesecca, M; Jackson, M; Rozenfeld, A B

2017-01-01

A Geant4 Monte Carlo simulation study was carried out to characterise a novel silicon strip detector, the Dose Magnifying Glass (DMG), for use in proton therapy Quality Assurance. We investigated the possibility to use DMG to determine the energy of the incident proton beam. The advantages of DMG are quick response, easy operation and high spatial resolution. In this work we theoretically proved that DMG can be used for QA in the determination of the energy of the incident proton beam, for ocular and prostate cancer therapy. The study was performed by means of Monte Carlo simulations Experimental measurements are currently on their way to confirm the results of this simulation study. (paper)

Monte Carlo characterisation of the Dose Magnifying Glass for proton therapy quality assurance

Science.gov (United States)

Merchant, A. H.; Guatelli, S.; Petesecca, M.; Jackson, M.; Rozenfeld, A. B.

2017-01-01

A Geant4 Monte Carlo simulation study was carried out to characterise a novel silicon strip detector, the Dose Magnifying Glass (DMG), for use in proton therapy Quality Assurance. We investigated the possibility to use DMG to determine the energy of the incident proton beam. The advantages of DMG are quick response, easy operation and high spatial resolution. In this work we theoretically proved that DMG can be used for QA in the determination of the energy of the incident proton beam, for ocular and prostate cancer therapy. The study was performed by means of Monte Carlo simulations Experimental measurements are currently on their way to confirm the results of this simulation study.

A new Recoil Proton Telescope for energy and fluence measurement of fast neutron fields

Energy Technology Data Exchange (ETDEWEB)

Lebreton, Lena; Bachaalany, Mario [IRSN / LMDN (Institut de Radioprotection et de Surete nucleaire / Laboratoire de Metrologie et de dosimetrie des neutrons), Cadarache Bat.159, 13115 Saint Paul-lez-Durance, (France); Husson, Daniel; Higueret, Stephane [IPHC / RaMsEs (Institut Pluridisciplinaire Hubert Curien / Radioprotection et Mesures Environnementales), 23 rue du loess - BP28, 67037 Strasbourg cedex 2, (France)

2015-07-01

The spectrometer ATHENA (Accurate Telescope for High Energy Neutron metrology Applications), is being developed at the IRSN / LMDN (Institut de Radioprotection et de Surete nucleaire / Laboratoire de Metrologie et de dosimetrie des neutrons) and aims at characterizing energy and fluence of fast neutron fields. The detector is a Recoil Proton Telescope and measures neutron fields in the range of 5 to 20 MeV. This telescope is intended to become a primary standard for both energy and fluence measurements. The neutron detection is achieved by a polyethylene radiator for n-p conversion, three 50{sub m} thick silicon sensors that use CMOS technology for the proton tracking and a 3 mm thick silicon diode to measure the residual proton energy. This first prototype used CMOS sensors called MIMOSTAR, initially developed for heavy ion physics. The use of CMOS sensors and silicon diode increases the intrinsic efficiency of the detector by a factor of ten compared with conventional designs. The first prototype has already been done and was a successful study giving the results it offered in terms of energy and fluence measurements. For mono energetic beams going from 5 to 19 MeV, the telescope offered an energy resolution between 5 and 11% and fluence difference going from 5 to 7% compared to other home standards. A second and final prototype of the detector is being designed. It will hold upgraded CMOS sensors called FastPixN. These CMOS sensors are supposed to run 400 times faster than the older version and therefore give the telescope the ability to support neutron flux in the order of 107 to 108cm{sup 2}:s{sup 1}. The first prototypes results showed that a 50 m pixel size is enough for a precise scattering angle reconstruction. Simulations using MCNPX and GEANT4 are already in place for further improvements. A DeltaE diode will replace the third CMOS sensor and will be installed right before the silicon diode for a better recoil proton selection. The final prototype with

The timeline of the lunar bombardment: Revisited

Science.gov (United States)

Morbidelli, A.; Nesvorny, D.; Laurenz, V.; Marchi, S.; Rubie, D. C.; Elkins-Tanton, L.; Wieczorek, M.; Jacobson, S.

2018-05-01

The timeline of the lunar bombardment in the first Gy of Solar System history remains unclear. Basin-forming impacts (e.g. Imbrium, Orientale), occurred 3.9-3.7 Gy ago, i.e. 600-800 My after the formation of the Moon itself. Many other basins formed before Imbrium, but their exact ages are not precisely known. There is an intense debate between two possible interpretations of the data: in the cataclysm scenario there was a surge in the impact rate approximately at the time of Imbrium formation, while in the accretion tail scenario the lunar bombardment declined since the era of planet formation and the latest basins formed in its tail-end. Here, we revisit the work of Morbidelli et al. (2012) that examined which scenario could be compatible with both the lunar crater record in the 3-4 Gy period and the abundance of highly siderophile elements (HSE) in the lunar mantle. We use updated numerical simulations of the fluxes of asteroids, comets and planetesimals leftover from the planet-formation process. Under the traditional assumption that the HSEs track the total amount of material accreted by the Moon since its formation, we conclude that only the cataclysm scenario can explain the data. The cataclysm should have started ∼ 3.95 Gy ago. However we also consider the possibility that HSEs are sequestered from the mantle of a planet during magma ocean crystallization, due to iron sulfide exsolution (O'Neil, 1991; Rubie et al., 2016). We show that this is likely true also for the Moon, if mantle overturn is taken into account. Based on the hypothesis that the lunar magma ocean crystallized about 100-150 My after Moon formation (Elkins-Tanton et al., 2011), and therefore that HSEs accumulated in the lunar mantle only after this timespan, we show that the bombardment in the 3-4 Gy period can be explained in the accretion tail scenario. This hypothesis would also explain why the Moon appears so depleted in HSEs relative to the Earth. We also extend our analysis of the

Radiation effects in silicon and gallium arsenide solar cells using isotropic and normally incident radiation

Science.gov (United States)

Anspaugh, B. E.; Downing, R. G.

1984-01-01

Several types of silicon and gallium arsenide solar cells were irradiated with protons with energies between 50 keV and 10 MeV at both normal and isotropic incidence. Damage coefficients for maximum power relative to 10 MeV were derived for these cells for both cases of omni-directional and normal incidence. The damage coefficients for the silicon cells were found to be somewhat lower than those quoted in the Solar Cell Radiation Handbook. These values were used to compute omni-directional damage coefficients suitable for solar cells protected by coverglasses of practical thickness, which in turn were used to compute solar cell degradation in two proton-dominated orbits. In spite of the difference in the low energy proton damage coefficients, the difference between the handbook prediction and the prediction using the newly derived values was negligible. Damage coefficients for GaAs solar cells for short circuit current, open circuit voltage, and maximum power were also computed relative to 10 MeV protons. They were used to predict cell degradation in the same two orbits and in a 5600 nmi orbit. Results show the performance of the GaAs solar cells in these orbits to be superior to that of the Si cells.

Target irradiation facility and targetry development at 160 MeV proton beam of Moscow linac

CERN Document Server

Zhuikov, B L; Konyakhin, N A; Vincent, J

1999-01-01

A facility has been built and successfully operated with the 160 MeV proton beam of Moscow Meson factory LINAC, Institute for Nuclear Research (INR) of Russian Academy of Science, Troitsk. The facility was created for various isotope production goals as well as for fundamental nuclear investigations at high intensity beam (100 mu A and more). An important part of the facility targetry system is a high-intensity beam monitoring collimator device. Measurements of the temperature distribution between collimator sectors, cooling water flow and temperature, and the beam current, provide an opportunity to compute beam losses and beam position. The target holder design allows easy insertion by manipulator and simultaneous bombardment of several different targets of various types and forms, and variation of proton energy on each target over a wide range below 160 MeV. The main target utilized for commercial sup 8 sup 2 Sr isotope production is metallic rubidium in a stainless-steel container. A regular wet chemistry ...

Hydrogenated amorphous silicon p-i-n solar cells deposited under well controlled ion bombardment using pulse-shaped substrate biasing

NARCIS (Netherlands)

Wank, M. A.; van Swaaij, R.; R. van de Sanden,; Zeman, M.

2012-01-01

We applied pulse-shaped biasing (PSB) to the expanding thermal plasma deposition of intrinsic hydrogenated amorphous silicon layers at substrate temperatures of 200 degrees C and growth rates of about 1?nm/s. Fourier transform infrared spectroscopy of intrinsic films showed a densification with

Electronic properties of semiinsulating GaAs irradiated by protons

CERN Document Server

Brudnyj, V N

2001-01-01

The n-to-p-type transformation of the conductivity and the decrease of resistivity (rho) down to 10 sup 2 Ohm cm (300 K) have been observed in a semi insulating GaAs (rho approx = (3-4) 10 sup 8 Ohm cm) upon proto n (5 MeV) bombardment with the dose up to D = 2 x 10 sup 1 sup 7 cm sup - sup 2. The temperature dependence of rho in heavy irradiated samples indicates that the conductivity is determined by the electron hopping within the temperature range (400-120) K and by the changeable hopping length at T <= 120 K. In proton irradiated low resistivity samples, the electronic switching effects have been revealed near 20 K. Isochronal annealing of the radiation-induced defects is investigated in the temperature range (20-750) deg C

Erosion of Be and deposition of C and O due to bombardment with C{sup +} and CO{sup +}

Energy Technology Data Exchange (ETDEWEB)

Eckstein, W.; Goldstrass, P.; Linsmeier, Ch. [Max-Planck-Institut fuer Plasmaphysik, Garching (Germany)

1998-01-01

The bombardment of Be with 3 and 5 keV C{sup +} and CO{sup +} at normal incidence is investigated experimentally and by computer simulation with the program TRIDYN. The deposited amount of C and O is determined experimentally and found in good agreement with calculated data for C bombardment. Chemical erosion dominates at higher fluences for CO{sup +} bombardment. Calculations are then used to determine the sputter yield of Be at steady state conditions as a function of the plasma edge electron temperature for two C impurity concentrations in the incident D flux, typical for fusion plasmas. The fluence to reach steady state conditions is also investigated. (author)

Spatial variation in void volume during charged particle bombardment: the effects of injected interstitials

International Nuclear Information System (INIS)

Lee, E.H.; Mansur, L.K.; Yoo, M.H.

1979-01-01

Experimental observations of the void volume at several depths along the range of 4 MeV Ni ions in 316 stainless steel are reported. The specimens were first preconditioned by neutron irradiation at temperatures of 450 and 584 0 C to fluences of approximately 8 x 10 26 n/m -2 . The void volume after ion bombardment to 60 dpa at the peak damage depth is significantly lower at the peak damage depth than in the region between that and the free surface. The ratio of the step height to void volume at the depth of peak energy deposition between regions masked from and exposed to the beam is strongly dependent on bombardment temperature. The reduction of void volume near the peak damage depth is larger for the 584 0 C than for the 450 0 C preconditioned material. These observations are consistent with recent theoretical results which account for the injection of the bombarding ions as self-interstitials. The theory necessary to understand the effect is developed

Electron emission from Inconel under ion bombardment

International Nuclear Information System (INIS)

Alonso, E.V.; Baragiola, R.A.; Ferron, J.; Oliva-Florio, A.

1979-01-01

Electron yields from clean and oxidized Inconel 625 surfaces have been measured for H + ,H 2 + ,He + ,O + and Ar + ions at normal incidence in the energy range 1.5 to 40 keV. These measurements have been made under ultrahigh vacuum and the samples were freed of surface contaminants by bombarding with high doses of either 20 keV H 2 + or 30 keV Ar + ions. Differences in yields of oxidized versus clean surfaces are explained in terms of differences in the probability that electrons internally excited escape upon reaching the surface. (author)

Radiation hardness of silicon detectors manufactured on wafers from various sources

International Nuclear Information System (INIS)

Dezillie, B.; Bates, S.; Glaser, M.; Lemeilleur, F.; Leroy, C.

1997-01-01

Impurity concentrations in the initial silicon material are expected to play an important role for the radiation hardness of silicon detectors, during their irradiation and for their evolution with time after irradiation. This work reports on the experimental results obtained with detectors manufactured using various float-zone (FZ) and epitaxial-grown material. Preliminary results comparing the changes in leakage current and full depletion voltage of FZ and epitaxial detectors as a function of fluence and of time after 10 14 cm -2 proton irradiation are given. The measurement of charge collection efficiency for epitaxial detectors is also presented. (orig.)

Hydrogenated amorphous silicon p–i–n solar cells deposited under well controlled ion bombardment using pulse-shaped substrate biasing

NARCIS (Netherlands)

Wank, M.A.; Swaaij, van R.A.C.M.M.; Sanden, van de M.C.M.; Zeman, M.

2012-01-01

We applied pulse-shaped biasing (PSB) to the expanding thermal plasma deposition of intrinsic hydrogenated amorphous silicon layers at substrate temperatures of 200¿°C and growth rates of about 1¿nm/s. Fourier transform infrared spectroscopy of intrinsic films showed a densification with increasing

Lorentz angle measurements in irradiated silicon detectors between 77 K and 300 K

International Nuclear Information System (INIS)

Bartsch, V.; Boer, W. de; Bol, J.

2001-01-01

Future experiments are using silicon detectors in a high radiation environment and in high magnetic fields. The radiation tolerance of silicon improves by cooling it to temperatures below 180 K. However, at low temperatures the mobility increases, which leads to larger deflections of the charge carriers by the Lorentz force. We present measurements of the Lorentz angle between 77 K and 300 K before and after irradiation with a primary beam of 21 MeV protons to a flux of 10 13 /cm 2 . (author)

Optical and passivating properties of hydrogenated amorphous silicon nitride deposited by plasma enhanced chemical vapour deposition for application on silicon solar cells

Energy Technology Data Exchange (ETDEWEB)

Wight, Daniel Nilsen

2008-07-01

quality, etch rate. The response of these parameters to high temperature anneals were correlated with structural changes in the silicon nitride films as measured by using the hydrogen bond concentration. Plasma enhanced chemical vapour deposition allows continuous variation in nearly all deposition parameters. The parameters studied in this work are the gas flow ratios and excitation power. In both direct and remote deposition systems, the increase in deposition power density lead to higher activation of ammonia which in turn lead to augmented incorporation of nitrogen into the films and thus lower refractive index. For a direct system, the same parameter change lead to a drastic fall in passivation quality of Czochralski silicon attributed to an increase in ion bombardment as well as the general observation that as deposited passivation tends to increase with refractive index. Silicon nitride films with variations in refractive index were also made by varying the silane-to-ammonia gas flow ratio. This simple parameter adjustment makes plasma enhanced chemical vapour deposited silicon nitride applicable to double layer anti-reflective coatings simulated in this work. The films were found to have an etch rate in 5% hydrofluoric acid that decreased with increasing refractive index. This behaviour is attributed to the decreasing concentration of nitrogen-to-hydrogen bonds in the films. Such bonds at the surface of silicon nitride have been suggested to be involved in the main reaction mechanism when etching silicon nitride in hydrofluoric acid. Annealing the films lead to a drastic fall in etch rates and was linked to the release of hydrogen from the nitrogen-hydrogen bonds. (author). 115 refs., 35 figs., 6 tabs

Low-energy ion beam bombardment effect on the plant-cell-envelope mimetic membrane for DNA transfer

Energy Technology Data Exchange (ETDEWEB)

Prakrajang, K., E-mail: k.prakrajang@gmail.com [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Sangwijit, K.; Anuntalabhochai, S. [Molecular Biology Laboratory, Department of Biology, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Wanichapichart, P. [Membrane Science and Technology Research Center, Department of Physics, Faculty of Science, Prince of Songkla University, Hat Yai, Songkla 90112 (Thailand); Yu, L.D., E-mail: yuld@fnrf.science.cmu.ac.th [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Thailand Center of Excellence in Physics, Commission on Higher Education, 328 Si Ayutthaya Road, Bangkok 10400 (Thailand)

2012-09-01

This study is a systematic analysis of the mechanisms involved in ion-beam induced DNA transfer, an important application of ion beam biotechnology. Cellulose membranes were used to mimic the plant cell envelope. Ion beams of argon (Ar) or nitrogen (N) at an energy of 25 keV bombarded the cellulose membranes at fluences ranging from 10{sup 15} to 10{sup 16} ions/cm{sup 2}. The damage to the ion-beam-bombarded membranes was characterized using infrared spectroscopy, a micro tensile test and scanning electron microscopy (SEM). Chain scission was the dominant radiation damage type in the membrane. DNA diffusion across the membrane was significantly increased after ion beam bombardment. The increase in DNA transfer is therefore attributed to chain scission, which increases the permeability by increasing the number of pores in the membrane.

The semiconductor doping with radiation defects via proton and alpha-particle irradiation. Review

CERN Document Server

Kozlov, V A

2001-01-01

Paper presents an analytical review devoted to semiconductor doping with radiation defects resulted from irradiation by light ions, in particular, by protons and alpha-particles. One studies formation of radiation defects in silicon, gallium arsenide and indium phosphide under light ion irradiation. One analyzes effect of proton and alpha-particle irradiation on electric conductivity of the above-listed semiconducting materials. Semiconductor doping with radiation defects under light ion irradiation enables to control their electrophysical properties and to design high-speed opto-, micro- and nanoelectronic devices on their basis

Mechanical and tribological properties of silicon nitride films synthesized by ion beam enhanced deposition

International Nuclear Information System (INIS)

Chen Yuanru; Li Shizhuo; Zhang Xushou; Liu Hong; Yang Genqing; Qu Baochun

1991-01-01

This article describes preliminary investigations of mechanical and tribological properties of silicon nitride film formed by ion beam enhanced deposition (IBED) on GH37 (Ni-based alloys) steel. The films were synthesized by silicon vapor deposition with a rate of 1 A/s and by 40 keV nitrogen ion bombardment simultaneously. The thickness of the film was about 5000 A. X-ray photoelectron spectroscopy and infrared absorption spectroscopy revealed that a stoichiometric Si 3 N 4 film was formed. The observation of TEM showed that the IBED Si 3 N 4 film normally had an amorphous structure. However, electron diffraction patterns revealed a certain crystallinity. The mechanical and tribological properties of the films were investigated with a scratch tester, microhardness meter, and a ball-on-disc tribometer respectively. Results show that the adhesive strength between film and substrate is about 51 N, the Vickers microhardness with a load of 0.2 N is 980, the friction coefficient measured for steel against silicon nitride film ranges from 0.1 to 0.15, and the wear rate of coatings is about 6.8x10 -5 mm 3 /(mN). Finally, the relationship among thermal annealing, crystallinity and tribological characteristics of the Si 3 N 4 film is discussed. (orig.)

Hydrogen analysis by elastic recoil spectrometry

International Nuclear Information System (INIS)

Tirira, J.; Trocellier, P.

1989-01-01

An absolute, quantitative procedure was developed to determine the hydrogen content and to describe its concentration profile in the near-surface region of solids. The experimental technique used was the elastic recoil detection analysis of protons induced by 4 He beam bombardment in the energy range <=1.8 MeV. The hydrogen content was calculated using a new recoil cross section expression. The analyses were performed in silicon crystals implanted with hydrogen at 10 keV. The implantation dose was evaluated with an accuracy of 10% and the hydrogen depth profile with that of +-10 nm around 200 nm. (author) 10 refs.; 3 figs

Structural activation calculations due to proton beam loss in the APT accelerator design

International Nuclear Information System (INIS)

Lee, S. K.; Beard, C. A.; Wilson, W. B.; Daemen, L. L.; Liska, D. J.; Waters, L. S.; Adams, M. L.

1995-01-01

For the new, high-power accelerators currently being designed, the amount of activation of the accelerator structure has become an important issue. To quantify this activation, a methodology was utilized that coupled transport and depletion codes to obtain dose rate estimates at several locations near the accelerator. This research focused on the 20 and 100 MeV sections of the Bridge-Coupled Drift Tube Linear Accelerator. The peak dose rate was found to be approximately 6 mR/hr in the 100 MeV section near the quadrupoles at a 25-cm radius for an assumed beam loss of 1 nA/m. It was determined that the activation was dominated by the proton interactions and subsequent spallation product generation, as opposed to the presence of the generated neutrons. The worst contributors were the spallation products created by proton bombardment of iron, and the worst component was the beam pipe, which consists mostly of iron. No definitive conclusions about the feasibility of hands-on maintenance can be determined, as the design is still not finalized

Structural activation calculations due to proton beam loss in the APT accelerator design

International Nuclear Information System (INIS)

Lee, S.K.; Beard, C.A.; Wilson, W.B.; Daemen, L.L.; Liska, D.J.; Waters, L.S.; Adams, M.L.

1994-01-01

For the new, high-power accelerators currently being designed, the amount of activation of the accelerator structure has become an important issue. To quantify this activation, a methodology was utilized that coupled transport and depletion codes to obtain dose rate estimates at several locations near the accelerator. This research focused on the 20 and 100 MeV sections of the Bridge-Coupled Drift Tube Linear Accelerator. The peak dose rate was found to be approximately 6 mR/hr in the 100 MeV section near the quadrupoles at a 25-cm radius for an assumed beam loss of 1 nA/m. It was determined that the activation was dominated by the proton interactions and subsequent spallation product generation, as opposed to the presence of the generated neutrons. The worst contributors were the spallation products created by proton bombardment of iron, and the worst component was the beam pipe, which consists mostly of iron. No definitive conclusions about the feasibility of hands-on maintenance can be determined, as the design is still not finalized

Pion-induced damage in silicon detectors

CERN Document Server

Bates, S; Glaser, M; Lemeilleur, F; León-Florián, E; Gössling, C; Kaiser, B; Rolf, A; Wunstorf, R; Feick, H; Fretwurst, E; Lindström, G; Moll, Michael; Taylor, G; Chilingarov, A G

1995-01-01

The damage induced by pions in silicon detectors is studied for positive and negative pions for fluence up to 10(14)cm-2 and 10(13) cm-2 respectively. Results on the energy dependence of the damage in the region of 65-330 MeV near to the  resonance are presented. The change in detector characteristics such as leakage current, charge collection efficiency and effective impurity concentration including long-term annealing effects have been studied. Comparisons to neutron and proton-induced damage are presented and discussed.

Fast atom bombardment mass spectrometry of condensed tannin sulfonate derivatives

Science.gov (United States)

J.J. Karchesy; L.Y. Foo; Richard W. Hemingway; E. Barofsky; D.F. Barofsky

1989-01-01

Condensed tannin sulfonate derivatives were studied by fast atom bombardment mass spectrometry (FAB-MS) to assess the feasibility of using this technique for determining molecular weight and structural information about these compounds. Both positive- and negative-ion spectra provided useful data with regard to molecular weight, cation species present, and presence of...

Novel results on fluence dependence and annealing behaviour of oxygenated and non-oxygenated silicon detectors

CERN Document Server

Martínez, C; Lozano, M; Campabadal, F; Santander, J; Fonseca, L; Ullán, M; Moreno, A

2002-01-01

This work presents the latest results on electrical properties degradation of silicon radiation detectors manufactured at IMB-CNM (Institut de Microelectronica de Barcelona) subjected to proton irradiation at CERN for high energy physics applications. The evolution of full depletion voltage and leakage current with fluence, as well as their annealing behaviour with time, were studied. The results obtained extend the previous understanding of the role played by technology and oxygenated material in hardening silicon radiation detectors. (15 refs).

Mechanism of conductivity type conversion in p-Hg1-xCdxTe crystals under low energy ion bombardment

International Nuclear Information System (INIS)

Bogoboyashchij, V.V.; Izhnin, I.I.

2000-01-01

Conditions giving rise to accelerated diffusion of Hg under bombardment of p-Hg 1-x Cd x Te by low-energy particles are analyzed and probable mechanisms of the phenomenon are suggested, permitting qualitative and quantitative agreement with experimental data. Analysis indicates that basic regularities of p-n-conversion during Hg 0.8 Cd 0.2 Te crystal bombardment by neutralized ions can be easily explained in the framework of traditional notions of mercury chemical diffusion in this material. The regularities stem from specific features of defect formation in Hg 0.8 Cd 0.2 Te, on the one hand, and from a high concentration of intrinsic electrons and holes, screening effectively the defective layer electric field, on the other hand. The high rate of conversion during ion bombardment compared with the rate of conversion during annealing in mercury vapors can be explained by the fact that a great number of nonequilibrium interstitial atoms of mercury, by far exceeding the value during thermal annealing, is crated near the surface of the crystal bombarded [ru

Identification markings for gemstones

International Nuclear Information System (INIS)

Dreschhoff, G.A.M.; Zeller, E.J.

1980-01-01

A method is described of providing permanent identification markings to gemstones such as diamond crystals by irradiating the cooled gemstone with protons in the desired pattern. The proton bombardment results in a reaction limited to a defined plane and converting the bombarded area of the plane into a different crystal lattice from that of the preirradiated stone. (author)

Pion production from deuterium by the bombardment with polarized protons of 277 and 500 MeV

International Nuclear Information System (INIS)

Lolos, G.J.; Auld, E.G.; Giles, G.; Jones, G.; McParland, B.; Ottewell, D.; Walden, P.L.; Zeigler, W.

1982-11-01

Analyzing power measurements of the (anti) pd → tπ + reaction are reported at incident proton energies of 277 and 500 MeV. The 277 MeV results span the angular range from 70 0 to 130 0 in the centre of mass while the two 500 MeV measurements at large angles were taken as a check of published results. With the angular distribution of the analyzing power at 277 MeV being now available, an examination of the energy dependence of the analyzing power shows that it exhibits characteristics closely resembling the shape and magnitude of the distribution observed for nuclei in the 9-12 mass range

Cesium ion bombardment of metal surfaces

International Nuclear Information System (INIS)

Tompa, G.S.

1986-01-01

The steady state cesium coverage due to cesium ion bombardment of molybdenum and tungsten was studied for the incident energy range below 500 eV. When a sample is exposed to a positive ion beam, the work function decreases until steady state is reached with a total dose of less than ≅10 16 ions/cm 2 , for both tungsten and molybdenum. A steady state minimum work function surface is produced at an incident energy of ≅100 eV for molybdenum and at an incident energy of ≅45 eV for tungsten. Increasing the incident energy results in an increase in the work function corresponding to a decrease in the surface coverage of cesium. At incident energies less than that giving the minimum work function, the work function approaches that of cesium metal. At a given bombarding energy the cesium coverage of tungsten is uniformly less than that of molybdenum. Effects of hydrogen gas coadsorption were also examined. Hydrogen coadsorption does not have a large effect on the steady state work functions. The largest shifts in the work function due to the coadsorption of hydrogen occur on the samples when there is no cesium present. A theory describing the steady-state coverage was developed is used to make predictions for other materials. A simple sticking and sputtering relationship, not including implantation, cannot account for the steady state coverage. At low concentrations, cesium coverage of a target is proportional to the ratio of (1 - β)/γ where β is the reflection coefficient and γ is the sputter yield. High coverages are produced on molybdenum due to implantation and low backscattering, because molybdenum is lighter than cesium. For tungsten the high backscattering and low implantation result in low coverages

Fission of {sup 209}Bi and {sup 197}Au nuclei induced by 30 MeV protons

Energy Technology Data Exchange (ETDEWEB)

Noshad, Houshyar; Soheyli, Saeed [Amir-Kabir University of Technology, Physics and Nuclear Science Department, Tehran (Iran); Lamehi-Rachti, Mohammad [Atomic Energy Organization of Iran (AEOI), Nuclear Research Center, Van de Graaff Laboratory, Tehran (Iran)

2001-10-01

Thin targets of {sup 209}Bi and {sup 197}Au were bombarded with 30 MeV protons at the Cyclotron Department of Nuclear Research Center for Agriculture and Medicine (NRCAM). Correlated measurements of kinetic energies of fission fragment pairs, and their time-of-flights were made using pair spectrometry. The fission cross sections, fragment mass distributions, and total kinetic energy distributions of the fragments were measured in our experiment. The accurate values of cross sections for fission of {sup 209}Bi and {sup 197}Au nuclei with 30 MeV protons were obtained to be 1,100{+-}100 and 62{+-}5.6 {mu}b, respectively. The cross section of {sup 209}Bi fission with its associated error, through using this method, has not been reported previously. The interpretation in terms of liquid-drop model of fissioning nucleus {sup 210}Po at the excitation energy of 35 MeV was confirmed by the dispersion of the distribution in fragment mass for bismuth fission. (author)

Two-proton pickup studies with the (6Li,8B) reaction

International Nuclear Information System (INIS)

Weisenmiller, R.B.

1976-01-01

The ( 6 Li, 8 B) reaction has been investigated on targets of 26 Mg, 24 Mg, 16 O, 13 C, 12 C, 11 B, 10 B, and 9 Be at a bombarding energy of 80.0 MeV, and on targets of 16 O, 12 C, 9 Be, 7 Li, and 6 Li at a bombarding energy of 93.3 MeV. Only levels consistent with direct, single-step two-proton pickup reaction mechanisms were observed to be strongly populated. On T/sub z/ = 0 targets, the spectroscopic selectivity of this reaction resembles that of the analogous (p,t) reaction. Additionally, these data demonstrate the dominance of spatially symmetric transfer of the two protons. On T/sub z/ greater than 0 targets the ( 6 Li, 8 B) reaction was employed to locate two previously unreported levels (at 7.47 +- 0.05 MeV and 8.86 +- 0.07 MeV) in the T/sub z/ = 2 nuclide 24 Ne and to establish the low-lying 1p-shell states in the T/sub z/ = 3 / 2 nuclei 11 Be, 9 Li, and 7 He. However, no evidence was seen for any narrow levels in the T/sub z/ = 3 / 2 nuclide 5 H nor for any narrow excited states in 7 He. The angular distributions reported here are rather featureless and decrease monotonically with increasing angle. This behavior can be shown by a semi-classical reaction theory to be a consequence of the reaction kinematics. A semi-classical approach also suggests that the kinematic term in the transition matrix element is only weakly dependent upon the angular momentum transfer (which is consistent with simple Distorted Wave Born Approximation calculations). However, only qualitative agreement was obtained between the observed relative transition yields and semi-classical predictions, using the two-nucleon coefficients of fractional parentage of Cohen and Kurath, probably due to the limitations of the semi-classical reaction theory

Proton Radioactivity Measurements at HRIBF: Ho, Lu, and Tm Isotopes

International Nuclear Information System (INIS)

Akovali, Y.; Batchelder, J.C.; Bingham, C.R.; Davinson, T.; Ginter, T.N.; Gross, C.J.; Grzywacz, R.; Hamilton, J.H.; Janas, Z.; Karny, M.; Kim, S.H.; MacDonald, B.D.; Mas, J.F.; McConnell, J.W.; Piechaczek, A.; Ressler, J.J.; Rykaczewski, K.; Slinger, R.C.; Szerypo, J.; Toth, K.S.; Weintraub, W.; Woods, P.J.; Yu, C.-H.; Zganjar, E.F.

1998-01-01

Two new isotopes, 145 Tm and 140 Ho and three isomers in previously known isotopes, 141m Ho, 150m Lu and 151m Lu have been discovered and studied via their decay by proton emission. These proton emitters were produced at the Holifield Radioactive Ion Beam Facility (HRIBF) by heavy-ion fusion-evaporation reactions, separated in A/Q with a recoil mass spectrometer (RMS), and detected in a double-sided silicon strip detector (DSSD). The decay energy and half-life was measured for each new emitter. An analysis in terms of a spherical shell model is applied to the Tm and Lu nuclei, but Ho is considerably deformed and requires a collective model interpretation

Particle bombardment and the genetic enhancement of crops: myths and realities

NARCIS (Netherlands)

Altpeter, F.; Baisakh, N.; Beachy, R.; Bock, R.; Capell, T.; Christou, P.; Daniell, H.; Datta, K.; Datta, S.; Dix, P.J.; Fauquet, C.; Huang, N.; Kohli, A.; Mooibroek, H.; Nicholson, L.; Nguyen, T.T.; Nugent, G.; Raemakers, C.J.J.M.; Romano, A.; Somers, D.A.; Stoger, E.; Taylor, N.; Visser, R.G.F.

2005-01-01

DNA transfer by particle bombardment makes use of physical processes to achieve the transformation of crop plants. There is no dependence on bacteria, so the limitations inherent in organisms such as Agrobacterium tumefaciens do not apply. The absence of biological constraints, at least until DNA

Ion bombardment induced surface topography modification of clean and contaminated single crystal Cu and Si

International Nuclear Information System (INIS)

Lewis, G.W.; Kiriakides, G.; Carter, G.; Nobes, M.J.

1982-01-01

Among the several factors which lead to depth resolution deterioration during sputter profiling, surface morphological modification resulting from local differences of sputtering rate can be important. This paper reports the results of direct scanning, electron microscopic studies obtained quasi-dynamically during increasing fluence ion bombardment of the evolution of etch pit structures on Si and Cu, and how such elaboration may be suppressed. It also reports on the elaboration of contaminant-induced cone generation for different ion species bombardment. The influence of such etch pit and cone generation on achievable depth resolution is assessed. (author)

Radiation effects in amorphous metallic alloys. Progress report, February 1, 1980-January 31, 1981

International Nuclear Information System (INIS)

Murray, R.B.; Kramer, J.J.; Onn, D.G.

1980-10-01

During the first year changes in the Curie temperature and saturation magnetization of the first series above (with 20 less than or equal to x less than or equal to 34) induced by proton bombardment have been studied, and correlated with small angle x-ray scattering measurements performed for x = 20 at Oak Ridge National Laboratory. Both the Curie temperature and the low temperature saturation magnetization increase with proton fluence up to 10 16 cm -2 but are constant for higher fluences. By varying the proton energy it is concluded that hydrogen implantation is eliminated as the principal source of the observed changes. Proton bombardment at the same fluences produces scattering centers that are observed by small angle x-ray scattering. The size of the scattering centers is in the range of 16 to 30 A. Electron irradiation (1.25 MeV) produces an increase in Curie temperature similar to that following proton bombardment

Diffusion length variation in 0.5- and 3-MeV-proton-irradiated, heteroepitaxial indium phosphide solar cells

Science.gov (United States)

Jain, Raj K.; Weinberg, Irving; Flood, Dennis J.

1993-01-01

Indium phosphide (InP) solar cells are more radiation resistant than gallium arsenide (GaAs) and silicon (Si) solar cells, and their growth by heteroepitaxy offers additional advantages leading to the development of light weight, mechanically strong, and cost-effective cells. Changes in heteroepitaxial InP cell efficiency under 0.5- and 3-MeV proton irradiations have been explained by the variation in the minority-carrier diffusion length. The base diffusion length versus proton fluence was calculated by simulating the cell performance. The diffusion length damage coefficient, K(sub L), was also plotted as a function of proton fluence.

Polarizing a stored proton beam by spin-flip?

International Nuclear Information System (INIS)

Oellers, Dieter Gerd Christian

2010-01-01

The present thesis discusses the extraction of the electron-proton spin-flip cross-section. The experimental setup, the data analysis and the results are pictured in detail. The proton is described by a QCD-based parton model. In leading twist three functions are needed. The quark distribution, the helicity distribution and the transversity distribution. While the first two are well-known, the transversity distribution is largely unknown. A self-sufficient measurement of the transversity is possible in double polarized proton-antiproton scattering. This rises the need of a polarized antiproton beam. So far spin filtering is the only tested method to produce a polarized proton beam, which may be capable to hold also for antiprotons. In-situ polarization build-up of a stored beam either by selective removal or by spin-flip of a spin-(1)/(2) beam is mathematically described. A high spin-flip cross-section would create an effective method to produce a polarized antiproton beam by polarized positrons. Prompted by conflicting calculations, a measurement of the spin-flip cross-section in low-energy electron-proton scattering was carried out. This experiment uses the electron beam of the electron cooler at COSY as an electron target. The depolarization of the stored proton beam is detected. An overview of the experiment is followed by detailed descriptions of the cycle setup, of the electron target and the ANKE silicon tracking telescopes acting as a beam polarimeter. Elastic protondeuteron scattering is the analyzing reaction. The event selection is depicted and the beam polarization is calculated. Upper limits of the two electron-proton spin-flip cross-sections σ parallel and σ perpendicular to are deduced using the likelihood method. (orig.)

Light response of YAP:Ce and LaBr{sub 3}:Ce scintillators to 4–30 MeV protons for applications to Telescope Proton Recoil neutron spectrometers

Energy Technology Data Exchange (ETDEWEB)