2D position sensitive microstrip sensors with charge division along the strip Studies on the position measurement error

CERN Document Server

Bassignana, D; Fernandez, M; Jaramillo, R; Lozano, M; Munoz, F.J; Pellegrini, G; Quirion, D; Vila, I; Vitorero, F

2013-01-01

Position sensitivity in semiconductor detectors of ionizing radiation is usually achieved by the segmentation of the sensing diode junction in many small sensing elements read out separately as in the case of conventional microstrips and pixel detectors. Alternatively, position sensitivity can be obtained by splitting the ionization signal collected by one single electrode amongst more than one readout channel with the ratio of the collected charges depending on the position where the signal was primary generated. Following this later approach, we implemented the charge division method in a conventional microstrip detector to obtain position sensitivity along the strip. We manufactured a proofof-concept demonstrator where the conventional aluminum electrodes were replaced by slightly resistive electrodes made of strongly doped poly-crystalline silicon and being readout at both strip ends. Here, we partially summarize the laser characterization of this first proof-of-concept demonstrator with special emphasis ...

New technologies of silicon position-sensitive detectors for future tracker systems

CERN Document Server

Bassignana, Daniela; Lozano, M

In view of the new generation of high luminosity colliders, HL-LHC and ILC, a farther investigation of silicon radiation detectors design and technology is demanded, in order to satisfy the stringent requirements of the experiments at such sophisticated machines. In this thesis, innovative technologies of silicon radiation detectors for future tracking systems are proposed. Three dierent devices have been studied and designed with the help of dierent tools for computer simulations. They have been manufactured in the IMB-CNM clean room facilities in Barcelona and characterized with proper experimental set-ups in order to test the detectors capabilities and the quality and suitability of the technologies used for their fabrication. The rst technology deals with the upgrade of dedicated sensors for laser alignment systems in future tracker detectors. The design and technology of common single-sided silicon microstrip detectors have been slightly modied in order to improve IR light transmittance of the devices. T...

Illumination-invariant face recognition with a contrast sensitive silicon retina

Energy Technology Data Exchange (ETDEWEB)

Buhmann, J.M. [Rheinische Friedrich-Wilhelms-Univ., Bonn (Germany). Inst. fuer Informatik II; Lades, M. [Bochum Univ. (Germany). Inst. fuer Neuroinformatik; Eeckman, F. [Lawrence Livermore National Lab., CA (United States)

1993-11-29

Changes in lighting conditions strongly effect the performance and reliability of computer vision systems. We report face recognition results under drastically changing lighting conditions for a computer vision system which concurrently uses a contrast sensitive silicon retina and a conventional, gain controlled CCD camera. For both input devices the face recognition system employs an elastic matching algorithm with wavelet based features to classify unknown faces. To assess the effect of analog on-chip preprocessing by the silicon retina the CCD images have been digitally preprocessed with a bandpass filter to adjust the power spectrum. The silicon retina with its ability to adjust sensitivity increases the recognition rate up to 50 percent. These comparative experiments demonstrate that preprocessing with an analog VLSI silicon retina generates image data enriched with object-constant features.

Results from multipoint alignment monitoring using the new generation of amorphous silicon position detectors

Energy Technology Data Exchange (ETDEWEB)

Alberdi, J.; Arce, P.; Barcala, J.M.; Calvo, E. [CIEMAT, 28040 Madrid (Spain); Ferrando, A. [CIEMAT, 28040 Madrid (Spain)], E-mail: antonio.ferrando@ciemat.es; Josa, M.I.; Molinero, A.; Navarrete, J.; Oller, J.C.; Yuste, C. [CIEMAT, 28040 Madrid (Spain); Calderon, A.; Gomez, G.; Gonzalez-Sanchez, F.J.; Martinez-Rivero, C.; Matorras, F.; Rodrigo, T.; Ruiz-Arbol, P.; Sobron, M.; Vila, I.; Virto, A.L. [Instituto de Fisica de Cantabria (IFCA), CSIC-University of Cantabria Santander (Spain)] (and others)

2008-08-11

We present the measured performance of a new generation of large sensitive area (28x28 mm{sup 2}) semitransparent amorphous silicon position detector sensors. More than 100 units have been characterized. They show a very high performance. To illustrate a multipoint application, we present results from the monitoring of five sensors placed in a 5.5-m-long light path.

Results from multipoint alignment monitoring using the new generation of amorphous silicon position detectors

International Nuclear Information System (INIS)

Alberdi, J.; Arce, P.; Barcala, J.M.; Calvo, E.; Ferrando, A.; Josa, M.I.; Molinero, A.; Navarrete, J.; Oller, J.C.; Yuste, C.; Calderon, A.; Gomez, G.; Gonzalez-Sanchez, F.J.; Martinez-Rivero, C.; Matorras, F.; Rodrigo, T.; Ruiz-Arbol, P.; Sobron, M.; Vila, I.; Virto, A.L.

2008-01-01

We present the measured performance of a new generation of large sensitive area (28x28 mm 2 ) semitransparent amorphous silicon position detector sensors. More than 100 units have been characterized. They show a very high performance. To illustrate a multipoint application, we present results from the monitoring of five sensors placed in a 5.5-m-long light path

Position-controlled epitaxial III-V nanowires on silicon

Energy Technology Data Exchange (ETDEWEB)

Roest, Aarnoud L; Verheijen, Marcel A; Wunnicke, Olaf; Serafin, Stacey; Wondergem, Harry; Bakkers, Erik P A M [Philips Research Laboratories, Professor Holstlaan 4, 5656 AA Eindhoven (Netherlands); Kavli Institute of NanoScience, Delft University of Technology, PO Box 5046, 2600 GA Delft (Netherlands)

2006-06-14

We show the epitaxial integration of III-V semiconductor nanowires with silicon technology. The wires are grown by the VLS mechanism with laser ablation as well as metal-organic vapour phase epitaxy. The hetero-epitaxial growth of the III-V nanowires on silicon was confirmed with x-ray diffraction pole figures and cross-sectional transmission electron microscopy. We show preliminary results of two-terminal electrical measurements of III-V nanowires grown on silicon. E-beam lithography was used to predefine the position of the nanowires.

Position-controlled epitaxial III-V nanowires on silicon

International Nuclear Information System (INIS)

Roest, Aarnoud L; Verheijen, Marcel A; Wunnicke, Olaf; Serafin, Stacey; Wondergem, Harry; Bakkers, Erik P A M

2006-01-01

We show the epitaxial integration of III-V semiconductor nanowires with silicon technology. The wires are grown by the VLS mechanism with laser ablation as well as metal-organic vapour phase epitaxy. The hetero-epitaxial growth of the III-V nanowires on silicon was confirmed with x-ray diffraction pole figures and cross-sectional transmission electron microscopy. We show preliminary results of two-terminal electrical measurements of III-V nanowires grown on silicon. E-beam lithography was used to predefine the position of the nanowires

Experimental Demonstration of Phase Sensitive Parametric Processes in a Nano-Engineered Silicon Waveguide

DEFF Research Database (Denmark)

Kang, Ning; Fadil, Ahmed; Pu, Minhao

2013-01-01

We demonstrate experimentally phase-sensitive processes in nano-engineered silicon waveguides for the first time. Furthermore, we highlight paths towards the optimization of the phase-sensitive extinction ratio under the impact of two-photon and free-carrier absorption.......We demonstrate experimentally phase-sensitive processes in nano-engineered silicon waveguides for the first time. Furthermore, we highlight paths towards the optimization of the phase-sensitive extinction ratio under the impact of two-photon and free-carrier absorption....

Silicon position-sensitive detectors for the Helios (NA 34) experiment

Energy Technology Data Exchange (ETDEWEB)

Engels, E Jr; Mani, S; Manns, T; Plants, D; Shepard, P F; Thompson, J A; Tosh, R; Chand, T; Shivpuri, R; Baker, W

1987-01-15

The design construction and testing of X-Y tracking modules for a silicon microstrip vertex detector for use in Fermilab experiment E706 is discussed. A successful adaptation of various technologies, essential for instrumenting this class of detectors at a university laboratory is described. Emphasis is placed on considerable cost reduction, design flexibiity and more rapid turnover with a view toward large detectors for the future.

Silicon position sensitive detectors for the Helios (NA 34) experiment

Energy Technology Data Exchange (ETDEWEB)

Engels, E Jr; Mani, S; Manns, T; Plants, D; Shepard, P F; Thompson, J A; Tosh, R; Chand, T; Shivpuri, R; Baker, W

1987-01-15

The design construction and testing of X-Y tracking modules for a silicon microstrip vertex detector for use in Fermilab experiment E706 is discussed. A successful adaptation of various technologies, essential for instrumenting this class of detectors at a university laboratory is described. Emphasis is placed on considerable cost reduction, design flexibiity and more rapid turnover with a view toward large detectors for the future.

VUV-sensitive silicon-photomultipliers for the nEXO-experiment

Energy Technology Data Exchange (ETDEWEB)

Wrede, Gerrit; Bayerlein, Reimund; Hufschmidt, Patrick; Jamil, Ako; Schneider, Judith; Wagenpfeil, Michael; Ziegler, Tobias; Hoessl, Juergen; Anton, Gisela; Michel, Thilo [ECAP, Friedrich-Alexander-Universitaet Erlangen-Nuernberg (Germany)

2016-07-01

The nEXO (next Enriched Xenon Observatory) experiment will search for the neutrinoless double beta decay of Xe-136 with a liquid xenon TPC (Time ProjectionChamber). The sensitivity of the experiment is related to the energy resolution, which itself depends on the accuracies of the measurements of the amount of drifting electrons and the number of scintillation photons with their wavelength being in the vacuum ultraviolet band. Silicon Photomultipliers (SiPM) shall be used for the detection of the scintillation light, since they can be produced extremely radiopure. Commercially available SiPM do not fulfill all requirements of the nEXO experiment, thus a dedicated development is necessary. To characterize the silicon photomultipliers, we have built a test apparatus for xenon liquefaction, in which a VUV-sensitive photomultiplier tube can be operated together with the SiPM. In this contribution we present our apparatus for the SiPM characterization measurements and our latest results on the test of the silicon photomultipliers for the detection of xenon scintillation light.

First Investigation on a novel 2D position sensitive semiconductor detector concept

CERN Document Server

Bassignana, D; Jaramillo, R; Lozano, M; Munoz, F.J; Pellegrini, G; Quirion, D; Vila, I

2012-01-01

This paper presents a first study of the performance of a novel 2D position-sensitive microstrip detector, where the resistive charge division method was implemented by replacing the metallic electrodes with resistive electrodes made of polycrystalline silicon. A characterization of two proof-of-concept prototypes with different values of the electrode resistivity was carried out using a pulsed Near Infra-Red laser. The experimental data were compared with the electrical simulation of the sensor equivalent circuit coupled to simple electronics readout circuits. The good agreement between experimental and simulation results establishes the soundness of resistive charge division method in silicon microstrip sensors and validates the developed simulation as a tool for the optimization of future sensor prototypes. Spatial resolution in the strip length direction depends on the ionizing event position. The average value obtained from the protype analysis is close to 1.2% of the strip length for a 6 MIP signal.

Delay-Line Three-Dimensional Position Sensitive Radiation Detection

Science.gov (United States)

Jeong, Manhee

High-resistivity silicon(Si) in large volumes and with good charge carrier transport properties has been produced and achieved success as a radiation detector material over the past few years due to its relatively low cost as well as the availability of well-established processing technologies. One application of that technology is in the fabrication of various position-sensing topologies from which the incident radiation's direction can be determined. We have succeeded in developing the modeling tools for investigating different position-sensing schemes and used those tools to examine both amplitude-based and time-based methods, an assessment that indicates that fine position-sensing can be achieved with simpler readout designs than are conventionally deployed. This realization can make ubiquitous and inexpensive deployment of special nuclear materials (SNM) detecting technology becomes more feasible because if one can deploy position-sensitive semiconductor detectors with only one or two contacts per side. For this purpose, we have described the delay-line radiation detector and its optimized fabrication. The semiconductor physics were simulated, the results from which guided the fabrication of the guard ring structure and the detector electrode, both of which included metal-field-plates. The measured improvement in the leakage current was confirmed with the fabricated devices, and the structures successfully suppressed soft-breakdown. We also demonstrated that fabricating an asymmetric strip-line structure successfully minimizing the pulse shaping and increases the distance through which one can propagate the information of the deposited charge distribution. With fabricated delay-line detectors we can acquire alpha spectra (Am-241) and gamma spectra (Ba-133, Co-57 and Cd-109). The delay-line detectors can therefore be used to extract the charge information from both ion and gamma-ray interactions. Furthermore, standard charge-sensitive circuits yield high SNR

14C autoradiography with an energy-sensitive silicon pixel detector.

Science.gov (United States)

Esposito, M; Mettivier, G; Russo, P

2011-04-07

The first performance tests are presented of a carbon-14 ((14)C) beta-particle digital autoradiography system with an energy-sensitive hybrid silicon pixel detector based on the Timepix readout circuit. Timepix was developed by the Medipix2 Collaboration and it is similar to the photon-counting Medipix2 circuit, except for an added time-based synchronization logic which allows derivation of energy information from the time-over-threshold signal. This feature permits direct energy measurements in each pixel of the detector array. Timepix is bump-bonded to a 300 µm thick silicon detector with 256 × 256 pixels of 55 µm pitch. Since an energetic beta-particle could release its kinetic energy in more than one detector pixel as it slows down in the semiconductor detector, an off-line image analysis procedure was adopted in which the single-particle cluster of hit pixels is recognized; its total energy is calculated and the position of interaction on the detector surface is attributed to the centre of the charge cluster. Measurements reported are detector sensitivity, (4.11 ± 0.03) × 10(-3) cps mm(-2) kBq(-1) g, background level, (3.59 ± 0.01) × 10(-5) cps mm(-2), and minimum detectable activity, 0.0077 Bq. The spatial resolution is 76.9 µm full-width at half-maximum. These figures are compared with several digital imaging detectors for (14)C beta-particle digital autoradiography.

Silicon Drift Detectors development for position sensing

International Nuclear Information System (INIS)

Castoldi, A.; Guazzoni, C.; Hartmann, R.; Strueder, L.

2007-01-01

Novel Silicon Drift Detectors (SDDs) with multi-linear architecture specifically intended for 2D position sensing and imaging applications are presented and their achievable spatial, energy and time resolution are discussed. The capability of providing a fast timing of the interaction with nanosecond time resolution is a new available feature that allows operating the drift detector in continuous readout mode for coincidence imaging applications either with an external trigger or in self-timing. The application of SDDs with multi-linear architecture to Compton electrons' tracking within a single silicon layer and the achieved experimental results will be discussed

Position sensitive detector for X-ray photons

International Nuclear Information System (INIS)

Barbosa, A.F.

1988-01-01

This work reports the theoretical basis and the details of the construction process, characterization and application of gas X-ray position sensitive detectors. The unidimensional detector consists of a gas camera (argon and CH 4 ), a metallic anode, a cathode and a delay line. Details of the construction process are given in order to allow the reproduction of the detector. It has been characterized by measuring its spatial resolution, homogeneity and linerity. The built linear detector has been used to obtain diffraction diagrams from polycrystalline silicon, C 23 H 48 paraffin and glassy carbon. These diagrams have been compared with those obtained under equivalent conditions with a conventional proportional detector by the step scanning method. It has been shown that the detector provides diffraction diagrams of equivalent quality to those obtained by the step scanning method, in appreciably lower time intervals. (author) [pt

Ultraviolet /UV/ sensitive phosphors for silicon imaging detectors

Science.gov (United States)

Viehmann, W.; Cowens, M. W.; Butner, C. L.

1981-01-01

The fluorescence properties of UV sensitive organic phosphors and the radiometric properties of phosphor coated silicon detectors in the VUV, UV, and visible wavelengths are described. With evaporated films of coronene and liumogen, effective quantum efficiencies of up to 20% have been achieved on silicon photodiodes in the vacuum UV. With thin films of methylmethacrylate (acrylic), which are doped with organic laser dyes and deposited from solution, detector quantum efficiencies of the order of 15% for wavelengths of 120-165 nm and of 40% for wavelengths above 190 nm have been obtained. The phosphor coatings also act as antireflection coatings and thereby enhance the response of coated devices throughout the visible and near IR.

Real-Time and In-Flow Sensing Using a High Sensitivity Porous Silicon Microcavity-Based Sensor.

Science.gov (United States)

Caroselli, Raffaele; Martín Sánchez, David; Ponce Alcántara, Salvador; Prats Quilez, Francisco; Torrijos Morán, Luis; García-Rupérez, Jaime

2017-12-05

Porous silicon seems to be an appropriate material platform for the development of high-sensitivity and low-cost optical sensors, as their porous nature increases the interaction with the target substances, and their fabrication process is very simple and inexpensive. In this paper, we present the experimental development of a porous silicon microcavity sensor and its use for real-time in-flow sensing application. A high-sensitivity configuration was designed and then fabricated, by electrochemically etching a silicon wafer. Refractive index sensing experiments were realized by flowing several dilutions with decreasing refractive indices, and measuring the spectral shift in real-time. The porous silicon microcavity sensor showed a very linear response over a wide refractive index range, with a sensitivity around 1000 nm/refractive index unit (RIU), which allowed us to directly detect refractive index variations in the 10 -7 RIU range.

POSSuMUS. A position sensitive scintillating muon SiPM detector

International Nuclear Information System (INIS)

Ruschke, Alexander

2014-01-01

The development of a modular designed large scale scintillation detector with a two-dimensional position sensitivity is presented in this thesis. This novel POsition Sensitive Scintillating MUon SiPM Detector is named POSSuMUS. The POSSuMUS detector is capable to determine the particle's position in two space dimensions with a fast trigger capability. Each module is constructed from two trapezoidal shaped plastic scintillators to form one rectangular shaped detector module. Both trapezoids are optically insulated against each other. In both trapezoids the scintillation light is collected by plastic fibers and guided towards silicon photomultipliers (SiPMs). SiPMs are light sensors which are capable to detect even smallest amounts of light. By combining several detector modules, position sensitive areas from 100 cm 2 to few m 2 are achievable with few readout channels. Therefore, POSSuMUS provides a cost effective detector concept. The position sensitivity along the trapezoidal geometry of one detector module is achieved by the path length dependent amount of detected light for crossing particles. The ratio of the light yields in both trapezoids is calculated. This value corresponds to the position of the particle traversing the detector. A spatial resolution in the order of several mm is foreseen. The position sensitivity along the scintillator module is determined by the propagation time of light to the SiPMs located on opposite sides of the detector. A spatial resolution of few cm is expected for this direction. The POSSuMUS detector is applicable as large area trigger detector with a two dimensional position information of crossing particles. This is suitable in detector tests of large area precesion detectors or for measuring the small angle scattering of cosmic muons. At the beginning of this thesis, the determination of important SiPM characteristics like the breakdown voltage is presented. In the course of this work the detector principle is proven by

Real-Time and In-Flow Sensing Using a High Sensitivity Porous Silicon Microcavity-Based Sensor

Directory of Open Access Journals (Sweden)

Raffaele Caroselli

2017-12-01

Full Text Available Porous silicon seems to be an appropriate material platform for the development of high-sensitivity and low-cost optical sensors, as their porous nature increases the interaction with the target substances, and their fabrication process is very simple and inexpensive. In this paper, we present the experimental development of a porous silicon microcavity sensor and its use for real-time in-flow sensing application. A high-sensitivity configuration was designed and then fabricated, by electrochemically etching a silicon wafer. Refractive index sensing experiments were realized by flowing several dilutions with decreasing refractive indices, and measuring the spectral shift in real-time. The porous silicon microcavity sensor showed a very linear response over a wide refractive index range, with a sensitivity around 1000 nm/refractive index unit (RIU, which allowed us to directly detect refractive index variations in the 10−7 RIU range.

Optical temperature sensor with enhanced sensitivity by employing hybrid waveguides in a silicon Mach-Zehnder interferometer

DEFF Research Database (Denmark)

Guan, Xiaowei; Wang, Xiaoyan; Frandsen, Lars Hagedorn

2016-01-01

We report on a novel design of an on-chip optical temperature sensor based on a Mach-Zehnder interferometer configuration where the two arms consist of hybrid waveguides providing opposite temperature-dependent phase changes to enhance the temperature sensitivity of the sensor. The sensitivity...... of the fabricated sensor with silicon/polymer hybrid waveguides is measured to be 172 pm/°C, which is two times larger than a conventional all-silicon optical temperature sensor (∼80 pm/°C). Moreover, a design with silicon/titanium dioxide hybrid waveguides is by calculation expected to have a sensitivity as high...

Engineered porous silicon counter electrodes for high efficiency dye-sensitized solar cells.

Science.gov (United States)

Erwin, William R; Oakes, Landon; Chatterjee, Shahana; Zarick, Holly F; Pint, Cary L; Bardhan, Rizia

2014-06-25

In this work, we demonstrate for the first time, the use of porous silicon (P-Si) as counter electrodes in dye-sensitized solar cells (DSSCs) with efficiencies (5.38%) comparable to that achieved with platinum counter electrodes (5.80%). To activate the P-Si for triiodide reduction, few layer carbon passivation is utilized to enable electrochemical stability of the silicon surface. Our results suggest porous silicon as a promising sustainable and manufacturable alternative to rare metals for electrochemical solar cells, following appropriate surface modification.

Large Size High Performance Transparent Amorphous Silicon Sensors for Laser Beam Position Detection and Monitoring

Energy Technology Data Exchange (ETDEWEB)

Calderon, A.; Martinez Rivero, C.; Matorras, F.; Rodrigo, T.; Sobron, M.; Vila, I.; Virto; Alberdi, J.; Arce, P.; Barcala, J. M.; Calvo, E.; Ferrando, A.; Josa, M. I.; Luque, J. M.; Molinero, A.; Navarrete, J.; Oller, J. C.; Kohler, C.; Lutz, B.; Schubert, M. B.

2006-09-04

We present the measured performance of a new generation of semitransparente amorphous silicon position detectors. They have a large sensitive area (30 x 30 mm2) and show good properties such as a high response (about 20 mA/W), an intinsic position resolution better than 3 m, a spatial point reconstruction precision better than 10 m, deflection angles smaller than 10 rad and a transmission power in the visible and NIR higher than 70%. In addition, multipoint alignment monitoring, using up to five sensors lined along a light path of about 5 meters, can be achieved with a resolution better than 20m. (Author)

Large Size High Performance Transparent Amorphous Silicon Sensors for Laser Beam Position Detection and Monitoring

International Nuclear Information System (INIS)

Calderon, A.; Martinez Rivero, C.; Matorras, F.; Rodrigo, T.; Sobron, M.; Vila, I.; Virto; Alberdi, J.; Arce, P.; Barcala, J. M.; Calvo, E.; Ferrando, A.; Josa, M. I.; Luque, J. M.; Molinero, A.; Navarrete, J.; Oller, J. C.; Kohler, C.; Lutz, B.; Schubert, M. B.

2006-01-01

We present the measured performance of a new generation of semitransparente amorphous silicon position detectors. They have a large sensitive area (30 x 30 mm2) and show good properties such as a high response (about 20 mA/W), an intinsic position resolution better than 3 m, a spatial point reconstruction precision better than 10 m, deflection angles smaller than 10 rad and a transmission power in the visible and NIR higher than 70%. In addition, multipoint alignment monitoring, using up to five sensors lined along a light path of about 5 meters, can be achieved with a resolution better than 20m. (Author)

Position-sensitive silicon strip detector characterization using particle beams

CERN Document Server

Maenpaeae, Teppo

2012-01-01

Silicon strip detectors are fast, cost-effective and have an excellent spatial resolution.They are widely used in many high-energy physics experiments. Modern high energyphysics experiments impose harsh operation conditions on the detectors, e.g., of LHCexperiments. The high radiation doses cause the detectors to eventually fail as a resultof excessive radiation damage. This has led to a need to study radiation tolerance usingvarious techniques. At the same time, a need to operate sensors approaching the endtheir lifetimes has arisen.The goal of this work is to demonstrate that novel detectors can survive the environment that is foreseen for future high-energy physics experiments. To reach this goal,measurement apparatuses are built. The devices are then used to measure the propertiesof irradiated detectors. The measurement data are analyzed, and conclusions are drawn.Three measurement apparatuses built as a part of this work are described: two telescopes measuring the tracks of the beam of a particle acceler...

Porous silicon: X-rays sensitivity

International Nuclear Information System (INIS)

Gerstenmayer, J.L.; Vibert, Patrick; Mercier, Patrick; Rayer, Claude; Hyvernage, Michel; Herino, Roland; Bsiesy, Ahmad

1994-01-01

We demonstrate that high porosity anodically porous silicon is radioluminescent. Interests of this study are double. Firstly: is the construction of porous silicon X-rays detectors (imagers) possible? Secondly: is it necessary to protect silicon porous based optoelectronic systems from ionising radiations effects (spatial environment)? ((orig.))

Triangulating the Position of Antimony Donors Implanted in Silicon

Science.gov (United States)

Bureau-Oxton, Chloe; Nielsen, Erik; Luhman, Dwight; Ten Eyck, Gregory; Pluym, Tammy; Wendt, Joel; Pioro-Ladrière, Michel; Lilly, Michael; Carroll, Malcolm

2015-03-01

A potential candidate for a quantum bit is a single Sb atom implanted in silicon. A single-electron-transistor (SET) situated close to an Sb donor can be used to measure the occupancy and spin of the electron on the donor while the lithographically patterned poly-silicon gates defining the SET can be used to control donor occupancy. In our samples two clusters of Sb donors have been implanted adjacent to opposite sides of the SET through a self-aligned process. In this talk, we will present experimental results that allow us to determine the approximate position of different donors by determining their relative capacitance to pairs of the SET's poly-silicon gates. We will present the results of capacitive-based modeling calculations that allow us to further locate the position of the donors. This work was performed, in part, at the Center for Integrated Nanotechnologies, a U.S. DOE Office of Basic Energy Sciences user facility. Sandia National Laboratories is a multi-program laboratory operated by Sandia Corporation, a Lockheed-Martin Company, for the U. S. Department of Energy under Contract No. DE-AC04-94AL85000.

Compton imaging with a highly-segmented, position-sensitive HPGe detector

Energy Technology Data Exchange (ETDEWEB)

Steinbach, T.; Hirsch, R.; Reiter, P.; Birkenbach, B.; Bruyneel, B.; Eberth, J.; Hess, H.; Lewandowski, L. [Universitaet zu Koeln, Institut fuer Kernphysik, Koeln (Germany); Gernhaeuser, R.; Maier, L.; Schlarb, M.; Weiler, B.; Winkel, M. [Technische Universitaet Muenchen, Physik Department, Garching (Germany)

2017-02-15

A Compton camera based on a highly-segmented high-purity germanium (HPGe) detector and a double-sided silicon-strip detector (DSSD) was developed, tested, and put into operation; the origin of γ radiation was determined successfully. The Compton camera is operated in two different modes. Coincidences from Compton-scattered γ-ray events between DSSD and HPGe detector allow for best angular resolution; while the high-efficiency mode takes advantage of the position sensitivity of the highly-segmented HPGe detector. In this mode the setup is sensitive to the whole 4π solid angle. The interaction-point positions in the 36-fold segmented large-volume HPGe detector are determined by pulse-shape analysis (PSA) of all HPGe detector signals. Imaging algorithms were developed for each mode and successfully implemented. The angular resolution sensitively depends on parameters such as geometry, selected multiplicity and interaction-point distances. Best results were obtained taking into account the crosstalk properties, the time alignment of the signals and the distance metric for the PSA for both operation modes. An angular resolution between 13.8 {sup circle} and 19.1 {sup circle}, depending on the minimal interaction-point distance for the high-efficiency mode at an energy of 1275 keV, was achieved. In the coincidence mode, an increased angular resolution of 4.6 {sup circle} was determined for the same γ-ray energy. (orig.)

Enhancing the far-UV sensitivity of silicon CMOS imaging arrays

Science.gov (United States)

Retherford, K. D.; Bai, Yibin; Ryu, Kevin K.; Gregory, J. A.; Welander, Paul B.; Davis, Michael W.; Greathouse, Thomas K.; Winter, Gregory S.; Suntharalingam, Vyshnavi; Beletic, James W.

2014-07-01

We report our progress toward optimizing backside-illuminated silicon PIN CMOS devices developed by Teledyne Imaging Sensors (TIS) for far-UV planetary science applications. This project was motivated by initial measurements at Southwest Research Institute (SwRI) of the far-UV responsivity of backside-illuminated silicon PIN photodiode test structures described in Bai et al., SPIE, 2008, which revealed a promising QE in the 100-200 nm range as reported in Davis et al., SPIE, 2012. Our effort to advance the capabilities of thinned silicon wafers capitalizes on recent innovations in molecular beam epitaxy (MBE) doping processes. Key achievements to date include: 1) Representative silicon test wafers were fabricated by TIS, and set up for MBE processing at MIT Lincoln Laboratory (LL); 2) Preliminary far-UV detector QE simulation runs were completed to aid MBE layer design; 3) Detector fabrication was completed through the pre-MBE step; and 4) Initial testing of the MBE doping process was performed on monitoring wafers, with detailed quality assessments. Early results suggest that potential challenges in optimizing the UV-sensitivity of silicon PIN type CMOS devices, compared with similar UV enhancement methods established for CCDs, have been mitigated through our newly developed methods. We will discuss the potential advantages of our approach and briefly describe future development steps.

Experimental and numerical studies on the sensitivity of carbon fibre/silicone rubber composite sensors

International Nuclear Information System (INIS)

Yang, Lili; Ge, Yong; Zhu, Qinghua; Zhang, Ce; Wang, Zongpeng; Liu, Penghuan

2012-01-01

Flexible conductive composite sensors are of great importance for applications in structural monitoring due to their low cost, high durability and excellent compatibility. In this work, carbon fibre/silicone rubber composites were prepared and their sensitivity near the percolation threshold was investigated experimentally and theoretically. Results show that carbon fibre/silicone rubber composites have great mechanical and sensitivity even under high strain conditions. Two models based on the tunnelling effect and general effective medium theory were found to understand the sensitivity of composites with lower and higher fractions of carbon fibre. Moreover, the reversibility of the sensing performance is improved with the increase of carbon fibre addition. (paper)

Performance comparison between silicon solar panel and dye-sensitized solar panel in Malaysia

Science.gov (United States)

Hamed, N. K. A.; Ahmad, M. K.; Urus, N. S. T.; Mohamad, F.; Nafarizal, N.; Ahmad, N.; Soon, C. F.; Ameruddin, A. S.; Faridah, A. B.; Shimomura, M.; Murakami, K.

2017-09-01

In carrying out experimental research in performance between silicon solar panel and dye-sensitive solar panel, we have been developing a device and a system. This system has been developed consisting of controllers, hardware and software. This system is capable to get most of the input sources. If only need to change the main circuit and coding for a different source input value. This device is able to get the ambient temperature, surface temperature, surrounding humidity, voltage with load, current with load, voltage without load and current without load and save the data into external memory. This device is able to withstand the heat and rain as it was fabricated in a waterproof box. This experiment was conducted to examine the performance of both the solar panels which are capable to maintain their stability and performance. A conclusion based on data populated, the distribution of data for dye-sensitized solar panel is much better than silicon solar panel as dye-sensitized solar panel is very sensitive to heat and not depend only on midday where is that is the maximum ambient temperature for both solar panel as silicon solar panel only can give maximum and high output only when midday.

Simulation and measurement of short infrared pulses on silicon position sensitive device

International Nuclear Information System (INIS)

Krapohl, D; Esebamen, O X; Nilsson, H E; Thungstroem, G

2011-01-01

Lateral position sensitive devices (PSD) are important for triangulation, alignment and surface measurements as well as for angle measurements. Large PSDs show a delay on rising and falling edges when irradiated with near infra-red light. This delay is also dependent on the spot position relative to the electrodes. It is however desirable in most applications to have a fast response. We investigated the responsiveness of a Sitek PSD in a mixed mode simulation of a two dimensional full sized detector. For simulation and measurement purposes focused light pulses with a wavelength of 850 nm, duration of 1μs and spot size of 280μm were used. The cause for the slopes of rise and fall time is due to time constants of the device capacitance as well as the photo-generation mechanism itself. To support the simulated results, we conducted measurements of rise and fall times on a physical device. Additionally, we quantified the homogeneity of the device by repositioning a spot of light from a pulsed ir-laser diode on the surface area.

SENSITIVITY TEMPERATURE DEPENDENCE RESEARCH OF TV-CAMERAS BASED ON SILICON MATRIXES

Directory of Open Access Journals (Sweden)

Alexey N. Starchenko

2017-07-01

Full Text Available Subject of Research. The research is dedicated to the analysis of sensitivity change patterns of the cameras based on silicon CMOS-matrixes in various ambient temperatures. This information is necessary for the correct camera application for photometric measurements in-situ. The paper deals with studies of sensitivity variations of two digital cameras with different silicon CMOS matrixes in visible and near IR regions of the spectrum at temperature change. Method. Due to practical restrictions the temperature changes were recorded in separate spectral intervals important for practical use of the cameras. The experiments were carried out with the use of a climatic chamber, providing change and keeping the temperature range from minus 40 to plus 50 °C at a pitch of 10 о С. Two cameras were chosen for research: VAC-135-IP with OmniVision OV9121 matrix and VAC-248-IP with OnSemiconductor VITA2000 matrix. The two tested devices were placed in a climatic chamber at the same time and illuminated by one radiation source with a color temperature about 3000 K in order to eliminate a number of methodological errors. Main Results. The temperature dependence of the signals was shown to be linear and the matrixes sensitivities were determined. The results obtained are consistent with theoretical views, in general. The coefficients of thermal sensitivity were computed by these dependencies. It is shown that the greatest affect of temperature on the sensitivity occurs in the area (0.7–1.1 mkm. Temperature coefficients of sensitivity increase with the downward radiation wavelength increase. The experiments carried out have shown that it is necessary to take into account the changes in temperature sensitivity of silicon matrixes in the red and near in IR regions of the spectrum. The effect reveals itself in a clearly negative way in cameras with an amplitude resolution of 10-12 bits used for aerospace and space spectrozonal photography. Practical Relevance

Position calibration of silicon strip detector using quasi-elastic scattering of 16O+197Au

International Nuclear Information System (INIS)

Yan Wenqi; Hu Hailong; Zhang Gaolong

2013-01-01

Background: Elastic scattering is induced by weakly unstable nuclei. Generally, a good angular resolution for angular distribution of elastic scattering is needed. The silicon strip detector is often used for this kind of experiment. Purpose: In order to use silicon strip detector to study the elastic scattering of weakly unbound nuclei, it is important to get the information of its position calibration. It is well known that the elastic scattering of stable nuclei has a good angular distribution and many experimental data have been obtained. Methods: So the scattering of stable nuclei can be used to calibrate the position information of silicon strip detector. In this experiment, the positions of silicon strip detectors are calibrated using 101 MeV and 59 MeV 16 O scattering on the 197 Au target. Results: The quasi-elastic peaks can be observed in the silicon strip detectors and the counts of quasi-elastic 16 O can be obtained. The solid angles of the silicon strip detectors are calibrated by using alpha source which has three alpha energy values. The angular distribution of quasi-elastic scattering of 16 O+ 197 Au is obtained at these two energy values. Conclusions: The experimental data of angular distribution are reasonable and fit for the principle of angular distribution of elastic scattering. It is concluded that in the experiment these silicon strip detectors can accurately give the position information and can be used for the elastic scattering experiment. (authors)

Study on photon sensitivity of silicon diodes related to materials used for shielding

International Nuclear Information System (INIS)

Moiseev, T.

1999-01-01

Large area silicon diodes used in electronic neutron dosemeters have a significant over-response to X- and gamma-rays, highly non-linear at photon energies below 200 keV. This over-response to photons is proportional to the diode's active area and strongly affects the neutron sensitivity of such dosemeters. Since silicon diodes are sensitive to light and electromagnetic fields, most diode detector assemblies are provided with a shielding, sometimes also used as radiation filter. In this paper, the influence of materials covering the diode's active area is investigated using the MCNP-4A code by estimating the photon induced pulses in a typical silicon wafer (300 μm thickness and 1 cm diameter) when provided with a front case cover. There have been simulated small-size diode front covers made of several materials with low neutron interaction cross-sections like aluminium, TEFLON, iron and lead. The estimated number of induced pulses in the silicon wafer is calculated for each type of shielding at normal photon incidence for several photon energies from 9.8 keV up to 1.15 MeV and compared with that in a bare silicon wafer. The simulated pulse height spectra show the origin of the photon-induced pulses in silicon for each material used as protective cover: the photoelectric effect for low Z front case materials at low-energy incident photons (up to about 65 keV) and the Compton and build-up effects for high Z case materials at higher photon energies. A simple means to lower and flatten the photon response of silicon diodes over an extended X- and gamma rays energy range is proposed by designing a composed photon filter. (author)

Study on Photon Sensitivity of Silicon Diodes Related to Materials Used for Shielding

International Nuclear Information System (INIS)

Moiseev, T.

2000-01-01

Large area Silicon diodes used in electronic neutron dosemeters have a significant over-response to X and gamma rays, highly non-linear at photon energies below 200 keV. This over-response to photons is proportional to the diodes active area and strongly affects the neutron sensitivity of such dosemeters. Since Silicon diodes are sensitive to light and electromagnetic fields, most diode detector assemblies are provided with a shielding, sometimes also used as radiation filter. In this paper, the influence of materials covering the diode's active area is investigated using the MCNP-4A code by estimating the photon induced pulses in a typical silicon wafer (300 μm thickness and 1 cm diameter) when provided with a front case cover. There have been simulated small-size diode front covers made of several materials with low neutron interaction cross-sections like aluminium, TEFLON, iron and lead. The estimated number of induced pulses in the silicon wafer is calculated for each type of shielding at normal photon incidence for several photon energies from 9.8 keV up to 1.15 MeV and compared with that in a bare silicon wafer. The simulated pulse height spectra show the origin of the photon induced pulses in silicon for each material used as protective cover: the photoelectric effect for low Z front case materials at low energy incident photons (up to about 65 keV) and the Compton and build-up effects for high Z case materials at higher photon energies. A simple means to lower and flatten the photon response of silicon diodes over an extended X and gamma rays energy range is proposed by designing a composed photon filter. (author)

High Sensitivity Detection of CdSe/ZnS Quantum Dot-Labeled DNA Based on N-type Porous Silicon Microcavities.

Science.gov (United States)

Lv, Changwu; Jia, Zhenhong; Lv, Jie; Zhang, Hongyan; Li, Yanyu

2017-01-01

N-type macroporous silicon microcavity structures were prepared using electrochemical etching in an HF solution in the absence of light and oxidants. The CdSe/ZnS water-soluble quantum dot-labeled DNA target molecules were detected by monitoring the microcavity reflectance spectrum, which was characterized by the reflectance spectrum defect state position shift resulting from changes to the structures' refractive index. Quantum dots with a high refractive index and DNA coupling can improve the detection sensitivity by amplifying the optical response signals of the target DNA. The experimental results show that DNA combined with a quantum dot can improve the sensitivity of DNA detection by more than five times.

P-type silicon drift detectors

International Nuclear Information System (INIS)

Walton, J.T.; Krieger, B.; Krofcheck, D.; O'Donnell, R.; Odyniec, G.; Partlan, M.D.; Wang, N.W.

1995-06-01

Preliminary results on 16 CM 2 , position-sensitive silicon drift detectors, fabricated for the first time on p-type silicon substrates, are presented. The detectors were designed, fabricated, and tested recently at LBL and show interesting properties which make them attractive for use in future physics experiments. A pulse count rate of approximately 8 x l0 6 s -1 is demonstrated by the p-type silicon drift detectors. This count rate estimate is derived by measuring simultaneous tracks produced by a laser and photolithographic mask collimator that generates double tracks separated by 50 μm to 1200 μm. A new method of using ion-implanted polysilicon to produce precise valued bias resistors on the silicon drift detectors is also discussed

A readout system for position sensitive measurements of X-ray using silicon strip detectors

CERN Document Server

Dabrowski, W; Grybos, P; Idzik, M; Kudlaty, J

2000-01-01

In this paper we describe the development of a readout system for X-ray measurements using silicon strip detectors. The limitation concerning the inherent spatial resolution of silicon strip detectors has been evaluated by Monte Carlo simulation and the results are discussed. The developed readout system is based on the binary readout architecture and consists of two ASICs: RX32 front-end chip comprising 32 channels of preamplifiers, shapers and discriminators, and COUNT32 counter chip comprising 32 20-bit asynchronous counters and the readout logic. This work focuses on the design and performance of the front-end chip. The RX32 chip has been optimised for a low detector capacitance, in the range of 1-3 pF, and high counting rate applications. It can be used with DC coupled detectors allowing the leakage current up to a few nA per strip. For the prototype chip manufactured in a CMOS process all basic parameters have been evaluated by electronic measurements. The noise below 140 el rms has been achieved for a ...

Position sensitive detection of neutrons in high radiation background field.

Science.gov (United States)

Vavrik, D; Jakubek, J; Pospisil, S; Vacik, J

2014-01-01

We present the development of a high-resolution position sensitive device for detection of slow neutrons in the environment of extremely high γ and e(-) radiation background. We make use of a planar silicon pixelated (pixel size: 55 × 55 μm(2)) spectroscopic Timepix detector adapted for neutron detection utilizing very thin (10)B converter placed onto detector surface. We demonstrate that electromagnetic radiation background can be discriminated from the neutron signal utilizing the fact that each particle type produces characteristic ionization tracks in the pixelated detector. Particular tracks can be distinguished by their 2D shape (in the detector plane) and spectroscopic response using single event analysis. A Cd sheet served as thermal neutron stopper as well as intensive source of gamma rays and energetic electrons. Highly efficient discrimination was successful even at very low neutron to electromagnetic background ratio about 10(-4).

Calibration of the OPAL jet chamber with UV laser beams. Measurement of the beam position with position-sensitive silicon diodes (PSD)

International Nuclear Information System (INIS)

Koch, J.

1990-03-01

The OPAL jet chamber is calibrated with tracks produced by UV laser beams. Lateral effect diodes are used for monitoring the laser beam location in the detector. These position sensitive detectors locate the point of impact in two dimensions by the charge division method. Measurements on several diodes were carried out in order to calibrate these devices and to investigate to observed pin-cushion distortion. Using the telegraphers equation suitable expressions were obtained for describing the observed behaviour. It was shown that the magnetic field of OPAL as well as the UV laser wavelength and puls duration had no influence on the position information. (orig.)

A porous silicon optical microcavity for sensitive bacteria detection

International Nuclear Information System (INIS)

Li Sha; Huang Jianfeng; Cai Lintao

2011-01-01

A porous silicon microcavity (PSM) is highly sensitive to subtle interface changes due to its high surface area, capillary condensation ability and a narrow resonance peak (∼10 nm). Based on the well-defined optical properties of a PSM, we successfully fabricated a bacteria detection chip for molecular or subcellular analysis by surface modification using undecylenic acid (UA), and the specific recognition binding of vancomycin to the D-alanyl-D-alanine of bacteria. The red shift of the PSM resonance peak showed a good linear relationship with bacteria concentration ranging from 100 to 1000 bacteria ml -1 at the level of relative standard deviation of 0.994 and detection limit of 20 bacteria ml -1 . The resulting PSM sensors demonstrated high sensitivity, good reproducibility, fast response and low cost for biosensing.

A porous silicon optical microcavity for sensitive bacteria detection

Science.gov (United States)

Li, Sha; Huang, Jianfeng; Cai, Lintao

2011-10-01

A porous silicon microcavity (PSM) is highly sensitive to subtle interface changes due to its high surface area, capillary condensation ability and a narrow resonance peak (~10 nm). Based on the well-defined optical properties of a PSM, we successfully fabricated a bacteria detection chip for molecular or subcellular analysis by surface modification using undecylenic acid (UA), and the specific recognition binding of vancomycin to the D-alanyl-D-alanine of bacteria. The red shift of the PSM resonance peak showed a good linear relationship with bacteria concentration ranging from 100 to 1000 bacteria ml - 1 at the level of relative standard deviation of 0.994 and detection limit of 20 bacteria ml - 1. The resulting PSM sensors demonstrated high sensitivity, good reproducibility, fast response and low cost for biosensing.

A porous silicon optical microcavity for sensitive bacteria detection

Energy Technology Data Exchange (ETDEWEB)

Li Sha; Huang Jianfeng; Cai Lintao, E-mail: lt.cai@siat.ac.cn [CAS Key Lab of Health Informatics, Shenzhen Key Laboratory of Cancer Nanotechnology, Institute of Biomedical and Health Engineering, Shenzhen Institutes of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055 (China)

2011-10-21

A porous silicon microcavity (PSM) is highly sensitive to subtle interface changes due to its high surface area, capillary condensation ability and a narrow resonance peak ({approx}10 nm). Based on the well-defined optical properties of a PSM, we successfully fabricated a bacteria detection chip for molecular or subcellular analysis by surface modification using undecylenic acid (UA), and the specific recognition binding of vancomycin to the D-alanyl-D-alanine of bacteria. The red shift of the PSM resonance peak showed a good linear relationship with bacteria concentration ranging from 100 to 1000 bacteria ml{sup -1} at the level of relative standard deviation of 0.994 and detection limit of 20 bacteria ml{sup -1}. The resulting PSM sensors demonstrated high sensitivity, good reproducibility, fast response and low cost for biosensing.

Light Enhanced Hydrofluoric Acid Passivation: A Sensitive Technique for Detecting Bulk Silicon Defects

Science.gov (United States)

Grant, Nicholas E.

2016-01-01

A procedure to measure the bulk lifetime (>100 µsec) of silicon wafers by temporarily attaining a very high level of surface passivation when immersing the wafers in hydrofluoric acid (HF) is presented. By this procedure three critical steps are required to attain the bulk lifetime. Firstly, prior to immersing silicon wafers into HF, they are chemically cleaned and subsequently etched in 25% tetramethylammonium hydroxide. Secondly, the chemically treated wafers are then placed into a large plastic container filled with a mixture of HF and hydrochloric acid, and then centered over an inductive coil for photoconductance (PC) measurements. Thirdly, to inhibit surface recombination and measure the bulk lifetime, the wafers are illuminated at 0.2 suns for 1 min using a halogen lamp, the illumination is switched off, and a PC measurement is immediately taken. By this procedure, the characteristics of bulk silicon defects can be accurately determined. Furthermore, it is anticipated that a sensitive RT surface passivation technique will be imperative for examining bulk silicon defects when their concentration is low (<1012 cm-3). PMID:26779939

Sensitivity encoded silicon photomultiplier—a new sensor for high-resolution PET-MRI

International Nuclear Information System (INIS)

Schulz, Volkmar; Berker, Yannick; Berneking, Arne; Omidvari, Negar; Kiessling, Fabian; Gola, Alberto; Piemonte, Claudio

2013-01-01

Detectors for simultaneous positron emission tomography and magnetic resonance imaging in particular with sub-mm spatial resolution are commonly composed of scintillator crystal arrays, readout via arrays of solid state sensors, such as avalanche photo diodes (APDs) or silicon photomultipliers (SiPMs). Usually a light guide between the crystals and the sensor is used to enable the identification of crystals which are smaller than the sensor elements. However, this complicates crystal identification at the gaps and edges of the sensor arrays. A solution is to use as many sensors as crystals with a direct coupling, which unfortunately increases the complexity and power consumption of the readout electronics. Since 1997, position-sensitive APDs have been successfully used to identify sub-mm crystals. Unfortunately, these devices show a limitation in their time resolution and a degradation of spatial resolution when placed in higher magnetic fields. To overcome these limitations, this paper presents a new sensor concept that extends conventional SiPMs by adding position information via the spatial encoding of the channel sensitivity. The concept allows a direct coupling of high-resolution crystal arrays to the sensor with a reduced amount of readout channels. The theory of sensitivity encoding is detailed and linked to compressed sensing to compute unique sparse solutions. Two devices have been designed using one- and two-dimensional linear sensitivity encoding with eight and four readout channels, respectively. Flood histograms of both devices show the capability to precisely identify all 4 × 4 LYSO crystals with dimensions of 0.93 × 0.93 × 10 mm 3 . For these crystals, the energy and time resolution (MV ± SD) of the devices with one (two)-dimensional encoding have been measured to be 12.3 · (1 ± 0.047)% (13.7 · (1 ± 0.047)%) around 511 keV with a paired coincidence time resolution (full width at half maximum) of 462 · (1 ± 0.054) ps (452 · (1 ± 0

Sensitivity encoded silicon photomultiplier—a new sensor for high-resolution PET-MRI

Science.gov (United States)

Schulz, Volkmar; Berker, Yannick; Berneking, Arne; Omidvari, Negar; Kiessling, Fabian; Gola, Alberto; Piemonte, Claudio

2013-07-01

Detectors for simultaneous positron emission tomography and magnetic resonance imaging in particular with sub-mm spatial resolution are commonly composed of scintillator crystal arrays, readout via arrays of solid state sensors, such as avalanche photo diodes (APDs) or silicon photomultipliers (SiPMs). Usually a light guide between the crystals and the sensor is used to enable the identification of crystals which are smaller than the sensor elements. However, this complicates crystal identification at the gaps and edges of the sensor arrays. A solution is to use as many sensors as crystals with a direct coupling, which unfortunately increases the complexity and power consumption of the readout electronics. Since 1997, position-sensitive APDs have been successfully used to identify sub-mm crystals. Unfortunately, these devices show a limitation in their time resolution and a degradation of spatial resolution when placed in higher magnetic fields. To overcome these limitations, this paper presents a new sensor concept that extends conventional SiPMs by adding position information via the spatial encoding of the channel sensitivity. The concept allows a direct coupling of high-resolution crystal arrays to the sensor with a reduced amount of readout channels. The theory of sensitivity encoding is detailed and linked to compressed sensing to compute unique sparse solutions. Two devices have been designed using one- and two-dimensional linear sensitivity encoding with eight and four readout channels, respectively. Flood histograms of both devices show the capability to precisely identify all 4 × 4 LYSO crystals with dimensions of 0.93 × 0.93 × 10 mm3. For these crystals, the energy and time resolution (MV ± SD) of the devices with one (two)-dimensional encoding have been measured to be 12.3 · (1 ± 0.047)% (13.7 · (1 ± 0.047)%) around 511 keV with a paired coincidence time resolution (full width at half maximum) of 462 · (1 ± 0.054) ps (452 · (1 ± 0

Sensitivity encoded silicon photomultiplier--a new sensor for high-resolution PET-MRI.

Science.gov (United States)

Schulz, Volkmar; Berker, Yannick; Berneking, Arne; Omidvari, Negar; Kiessling, Fabian; Gola, Alberto; Piemonte, Claudio

2013-07-21

Detectors for simultaneous positron emission tomography and magnetic resonance imaging in particular with sub-mm spatial resolution are commonly composed of scintillator crystal arrays, readout via arrays of solid state sensors, such as avalanche photo diodes (APDs) or silicon photomultipliers (SiPMs). Usually a light guide between the crystals and the sensor is used to enable the identification of crystals which are smaller than the sensor elements. However, this complicates crystal identification at the gaps and edges of the sensor arrays. A solution is to use as many sensors as crystals with a direct coupling, which unfortunately increases the complexity and power consumption of the readout electronics. Since 1997, position-sensitive APDs have been successfully used to identify sub-mm crystals. Unfortunately, these devices show a limitation in their time resolution and a degradation of spatial resolution when placed in higher magnetic fields. To overcome these limitations, this paper presents a new sensor concept that extends conventional SiPMs by adding position information via the spatial encoding of the channel sensitivity. The concept allows a direct coupling of high-resolution crystal arrays to the sensor with a reduced amount of readout channels. The theory of sensitivity encoding is detailed and linked to compressed sensing to compute unique sparse solutions. Two devices have been designed using one- and two-dimensional linear sensitivity encoding with eight and four readout channels, respectively. Flood histograms of both devices show the capability to precisely identify all 4 × 4 LYSO crystals with dimensions of 0.93 × 0.93 × 10 mm(3). For these crystals, the energy and time resolution (MV ± SD) of the devices with one (two)-dimensional encoding have been measured to be 12.3 · (1 ± 0.047)% (13.7 · (1 ± 0.047)%) around 511 keV with a paired coincidence time resolution (full width at half maximum) of 462 · (1 ± 0.054) ps (452 · (1 ± 0

Sensitivity of energy-packed compounds based on superfine and nanoporous silicon to pulsed electrical treatments

Energy Technology Data Exchange (ETDEWEB)

Zegrya, G. G. [Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation); Savenkov, G. G. [Saint-Petersburg State Engineering Institute (Technical University) (Russian Federation); Morozov, V. A. [Saint-Petersburg State University (Russian Federation); Zegrya, A. G.; Ulin, N. V., E-mail: Ulin@mail.ioffe.ru; Ulin, V. P. [Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation); Lukin, A. A. [Saint-Petersburg State Engineering Institute (Technical University) (Russian Federation); Bragin, V. A.; Oskin, I. A. [AO Scientific Production Association Poisk (Russian Federation); Mikhailov, Yu. M. [Russian Academy of Sciences, Institute of Problems of Chemical Physics (Russian Federation)

2017-04-15

The sensitivity of an energy-packed compound based on nanoporous silicon and calcium perchlorate to a high-current electron beam is studied. The initiation of explosive transformations in a mixture of potassium picrate with a highly dispersed powder of boron-doped silicon by means of a high-voltage discharge is examined. It is shown that explosive transformation modes (combustion and explosion) appear in the energy-packed compound under study upon its treatment with an electron beam. A relationship is established between the explosive transformation modes and the density of the energy-packed compound and between the breakdown (initiation) voltage and the mass fraction of the silicon powder.

Studies of the sensitivity dependence of float zone silicon diodes on gamma absorbed dose

International Nuclear Information System (INIS)

Pascoalino, K.C.S.; Santos, T.C. dos; Barbosa, R.F.; Camargo, F. de; Goncalves, J.A.C.; Bueno, C.C.

2011-01-01

Full text: Several advantages of silicon diodes which include small size, low cost, high sensitivity and wide availability, make them suitable for dosimetry and for radiation field mapping. However, the small radiation tolerance of ordinary silicon devices has imposed constraints on their application in intense radiation fields such as found in industrial radiation processes. This scenario has been changed with the development of radiation hard silicon devices to be used as track detectors in high-energy physics experiments. Particularly, in this work it is presented the dosimetric results obtained with a batch of nine junction silicon diodes developed, in the framework of CERN RD50 Collaboration, as good candidates for improved radiation hardness. These diodes were produced with 300 micrometer n-type silicon substrate grown by standard float zone technique and processed by the Microelectronics Center of Helsinki University of Technology. The samples irradiation was performed using a Co-60 irradiator (Gammacell 220) which delivers a dose-rate of 2 kGy/h. During the irradiation, the unbiased diodes were connected through low-noise coaxial cables to the input of a KEITHLEY 617 electrometer, in order to monitor the devices photocurrent as a function of the exposure time. To study the response uniformity of the batch of nine diodes as well the sensitivity dependence on the absorbed dose, they were irradiated with different doses from 5 kGy up to 50 kGy. The sensitivity response of each device was investigated through the on-line measurements of the current signals as a function of the exposure time. For doses up to 5 kGy, all diodes exhibited a current decay of almost six percent in comparison with the value registered at the start-time of the irradiation. However, this decrease in the current sensitivity is much smaller than those observed with ordinary diodes for the same absorbed dose. The dose-response curves of the devices were also investigated through the plot

A silicon-based electrochemical sensor for highly sensitive, specific, label-free and real-time DNA detection

International Nuclear Information System (INIS)

Guo, Yuanyuan; Su, Shao; Wei, Xinpan; Zhong, Yiling; Su, Yuanyuan; He, Yao; Huang, Qing; Fan, Chunhai

2013-01-01

We herein present a new kind of silicon-based electrochemical sensor using a gold nanoparticles-decorated silicon wafer (AuNPs@Si) as a high-performance electrode, which is facilely prepared via in situ AuNPs growth on a silicon wafer. Particularly significantly, the resultant electrochemical sensor is efficacious for label-free DNA detection with high sensitivity due to the unique merits of the prepared silicon-based electrode. Typically, DNA at remarkably low concentrations (1–10 fM) could be readily detected without requiring additional signal-amplification procedures, which is better than or comparable to the lowest DNA concentration ever detected via well-studied signal-amplification-assisted electrochemical sensors. Moreover, the silicon-based sensor features high specificity, allowing unambiguous discrimination of single-based mismatches. We further show that real-time DNA assembly is readily monitored via recording the intensity changes of current signals due to the robust thermal stability of the silicon-based electrode. The unprecedented advantages of the silicon-based electrochemical sensor would offer new opportunities for myriad sensing applications. (paper)

Amorphous Silicon-Germanium Films with Embedded Nano crystals for Thermal Detectors with Very High Sensitivity

International Nuclear Information System (INIS)

Calleja, C.; Torres, A.; Rosales-Quintero, P.; Moreno, M.

2016-01-01

We have optimized the deposition conditions of amorphous silicon-germanium films with embedded nano crystals in a plasma enhanced chemical vapor deposition (PECVD) reactor, working at a standard frequency of 13.56 MHz. The objective was to produce films with very large Temperature Coefficient of Resistance (TCR), which is a signature of the sensitivity in thermal detectors (micro bolometers). Morphological, electrical, and optical characterization were performed in the films, and we found optimal conditions for obtaining films with very high values of thermal coefficient of resistance (TCR = 7.9%K -1 ). Our results show that amorphous silicon-germanium films with embedded nano crystals can be used as thermo sensitive films in high performance infrared focal plane arrays (IRFPAs) used in commercial thermal cameras.

Highly Sensitive Bulk Silicon Chemical Sensors with Sub-5 nm Thin Charge Inversion Layers.

Science.gov (United States)

Fahad, Hossain M; Gupta, Niharika; Han, Rui; Desai, Sujay B; Javey, Ali

2018-03-27

There is an increasing demand for mass-producible, low-power gas sensors in a wide variety of industrial and consumer applications. Here, we report chemical-sensitive field-effect-transistors (CS-FETs) based on bulk silicon wafers, wherein an electrostatically confined sub-5 nm thin charge inversion layer is modulated by chemical exposure to achieve a high-sensitivity gas-sensing platform. Using hydrogen sensing as a "litmus" test, we demonstrate large sensor responses (>1000%) to 0.5% H 2 gas, with fast response (<60 s) and recovery times (<120 s) at room temperature and low power (<50 μW). On the basis of these performance metrics as well as standardized benchmarking, we show that bulk silicon CS-FETs offer similar or better sensing performance compared to emerging nanostructures semiconductors while providing a highly scalable and manufacturable platform.

Modified MIS-structure based on nanoporous silicon with enhanced sensitivity to the hydrogen containing gases

Energy Technology Data Exchange (ETDEWEB)

Gorbanyuk, T.; Evtukh, A.; Litovchenko, V.; Solntsev, V. [Institute of Semiconductor Physics, Kiev (Ukraine)

2008-07-01

The gas sensitivity of metal-insulator-semiconductor (MIS)-structures based on nanoporous silicon with active electrodes from palladium/tungsten oxide composite has been studied. It was found that the using of palladium/tungsten oxide composite (instead of thin palladium film) leads to enhanced sensitivity of MIS structures to hydrogen sulphide in air. The mechanism of this phenomenon has been established. The enhanced H{sub 2}S sensitivity is explained in the following way. The microparticles of tungsten trioxide inside palladium matrix stimulate the dissociation of hydrogen sulphide molecules, and hydrogen atoms and/or protons flow down to palladium surface, are absorbed by palladium volume, diffuse to palladium/oxidized nanoporous silicon interface. Hydrogen atoms adsorbed at the interface are polarized and give rise to a dipole layer. As a result, the voltage shift of the capacity-voltage (C-V) curve proportional to the measured gas concentration is observed. The surface microstructure of Pd/WO{sub 3} composite was studied by AFM microscopy. The chemical content of the composite film has been investigated by SIMS. It was found that the composite film on nanoporous silicon surface poses the holes with the size about 0.05 {mu}m, the mean separation between tungsten oxide microparticles is 1-2 {mu}m. It also was found that the using of the additional double layer polymer film (polymer film (phthalocyanine zinc)/semicon-ductor film (cadmium sulphide)) on composite film surface leads to the additional enhancement of the gas sensitivity to hydrogen sulphide. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Study of position resolution and electron-hadron separation of electromagnetic calorimeter with a silicon structure

International Nuclear Information System (INIS)

Gorodnichev, V.B.; Kachanov, V.A.; Khodyrev, V.Yu.; Kurchaninov, L.L.; Rykali, V.V.; Solovianov, V.L.; Ukhalov, M.N.

1993-01-01

The maximum shower silicon strip detectors embedded in a module of sandwich-type electromagnetic calorimeter have been tested. The position resolution at different depths of the silicon structure has been measured. The results on electron-hadron separation obtained as a byproduct in this study are presented, and possibility of their improvement is discussed. 8 refs., 10 figs., 1 tab

Position sensitive x-ray detector

International Nuclear Information System (INIS)

Macchione, E.L.A.

1990-01-01

A multi ware position sensitive gas counter for X-ray detection was developed in our laboratory, making use of commercial delay-lines for position sensing. Six delay-line chips (50 ns delay each, 40 Mhz cut-off frequency) cover a total sensitive length of 150 mm leading to a delay-risetime ratio that allows for a high-resolution position detection. Tests using the 5,9 keV X-ray line from a 55 Fe source and integral linearity better than 0,1% and a maximal differential linearity of ±4,0% were obtained operating the detector with an Ar-C H 4 (90%-10%) gas mixture at 700 torr. Similar tests were performed, using the 8,04 keV line from a Cu x-ray tube. A total resolution of 330 μm, and the same integral and differential linearities were obtained. (author)

On the origin of increased sensitivity and mass resolution using silicon masks in MALDI.

Science.gov (United States)

Diologent, Laurent; Franck, Julien; Wisztorski, Maxence; Treizebre, Anthony; Focsa, Cristian; Fournier, Isabelle; Ziskind, Michael

2014-02-04

Since its development, MALDI has proved its performance in the analysis of intact biomolecules up to high molecular weights, regardless of their polarity. Sensitivity of MALDI instruments is a key point for breaking the limits of observing biomolecules of lower abundances. Instrumentation is one way to improve sensitivity by increasing ion transmission and using more sensitive detection systems. On the other side, improving MALDI ion production yields would have important outcomes. MALDI ion production is still not well-controlled and, indeed, the amount of ions produced per laser shot with respect to the total volume of desorbed material is very low. This has particular implications for certain applications, such as MALDI MS imaging where laser beam focusing as fine as possible (5-10 μm) is searched in order to reach higher spatial resolution images. However, various studies point out an intrinsic decrease in signal intensity for strong focusing. We have therefore been interested in developing silicon mask systems to decrease an irradiated area by cutting rather than focusing the laser beam and to study the parameters affecting sensitivity using such systems. For this, we systematically examined variation with laser fluence of intensity and spectral resolution in MALDI of standard peptides when using silicon-etched masks of various aperture sizes. These studies demonstrate a simultaneous increase in spectral resolution and signal intensity. Origin of this effect is discussed in the frame of the two-step ionization model. Experimental data in the low fluence range are fitted with an increase of the primary ionization through matrix-silicon edge contact provided by the masks. On the other hand, behavior at higher fluence could be explained by an effect on the secondary ionization via changes in the plume dynamics.

Silicon radiation detectors: materials and applications

International Nuclear Information System (INIS)

Walton, J.T.; Haller, E.E.

1982-10-01

Silicon nuclear radiation detectors are available today in a large variety of sizes and types. This profusion has been made possible by the ever increasing quality and diameter silicon single crystals, new processing technologies and techniques, and innovative detector design. The salient characteristics of the four basic detector groups, diffused junction, ion implanted, surface barrier, and lithium drift are reviewed along with the silicon crystal requirements. Results of crystal imperfections detected by lithium ion compensation are presented. Processing technologies and techniques are described. Two recent novel position-sensitive detector designs are discussed - one in high-energy particle track reconstruction and the other in x-ray angiography. The unique experimental results obtained with these devices are presented

MR imaging of silicone breast implants: evaluation of prospective and retrospective interpretations and interobserver agreement.

Science.gov (United States)

Quinn, S F; Neubauer, N M; Sheley, R C; Demlow, T A; Szumowski, J

1996-01-01

MR imaging was used to evaluate the integrity of silicone breast implants in 54 women with 108 implants. MR images were interpreted by relatively inexperienced readers who tried to reproduce the experiences reported in the literature. The study examines the interobserver agreement using different diagnostic signs and the influence of experience on interpretation errors. Prospective and retrospective interpretations were compared with surgical findings at the time of explanation. Diagnostic indicators, including the linguine sign, the inverted tear drop sign, the C sign, water droplets mixed with silicone, and extracapsular globules of silicone, were evaluated for diagnostic efficacy and interobserver agreement. The prospective sensitivity and specificity were 87% and 78%, respectively. With the retrospective interpretations, the sensitivity and specificity increased to 93% and 92%, respectively. Most of the prospective false-positive interpretations were due to misinterpreting radial folds as signs of implant rupture. Six implants interpreted retrospectively as false positives had gross amounts of silicone around the implants at surgery but there were no obvious rents in the implant shells. There was fair to excellent interobserver agreement with the individual diagnostic signs except for extracapsular globules of silicone. All of the signs had specificities of greater than 90%. The sensitivities of the individual signs were less than the overall retrospective sensitivity. With experience, the sensitivity improved from 87% to 93% and the specificity improved from 78% to 92%. This study helps substantiate the use of diagnostic signs used by other authors to detect silicone loss from breast implants by MR imaging; however, questions remain as to the clinical role of MR imaging in evaluating implants for silicone loss.

ISPA (imaging silicon pixel array) experiment

CERN Multimedia

Patrice Loïez

2002-01-01

The ISPA tube is a position-sensitive photon detector. It belongs to the family of hybrid photon detectors (HPD), recently developed by CERN and INFN with leading photodetector firms. HPDs confront in a vacuum envelope a photocathode and a silicon detector. This can be a single diode or a pixelized detector. The electrons generated by the photocathode are efficiently detected by the silicon anode by applying a high-voltage difference between them. ISPA tube can be used in high-energy applications as well as bio-medical and imaging applications.

Improved performance of silicon-nanoparticle film-coated dye-sensitized solar cells

Energy Technology Data Exchange (ETDEWEB)

Gupta, Ravindra Kumar; Bedja, Idriss M. [CRC, Department of Optometry, College of Applied Medical Sciences, King Saud University, P.O. Box 10219, Riyadh 11433 (Saudi Arabia); Aldwayyan, Abdullah Saleh [Department of Physics and Astronomy, College of Science, King Saud University, P.O. Box 2455, Riyadh 11451 (Saudi Arabia)

2012-11-15

Silicon (Si) nanoparticles with average size of 13 nm and orange-red luminescence under UV absorption were synthesized using electrochemical etching of silicon wafers. A film of Si nanoparticles with thickness of 0.75 {mu}m to 2.6 {mu}m was coated on the glass (TiO{sub 2} side) of a dye-sensitized solar cell (DSSC). The cell exhibited nearly 9% enhancement in power conversion efficiency ({eta}) at film thickness of {proportional_to}2.4 {mu}m under solar irradiation of 100 mW/cm{sup 2} (AM 1.5) with improved fill factor and short-circuit current density. This study revealed for the first time that the Si-nanoparticle film converting UV into visible light and helping in homogeneous irradiation, can be utilized for improving the efficiency of the DSSCs. (copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Undepleted silicon detectors

International Nuclear Information System (INIS)

Rancoita, P.G.; Seidman, A.

1985-01-01

Large-size silicon detectors employing relatively low resistivity material can be used in electromagnetic calorimetry. They can operate in strong magnetic fields, under geometric constraints and with microstrip detectors a high resolution can be achieved. Low noise large capacitance oriented electronics was developed to enable good signal-to-noise ratio for single relativistic particles traversing large area detectors. In undepleted silicon detectors, the charge migration from the field-free region has been investigated by comparing the expected peak position (from the depleted layer only) of the energy-loss of relativistic electrons with the measured one. Furthermore, the undepleted detectors have been employed in a prototype of Si/W electromagnetic colorimeter. The sensitive layer was found to be systematically larger than the depleted one

Large area two dimensional position sensitive detectors

International Nuclear Information System (INIS)

Sann, H.; Olmi, A.; Lynen, U.; Stelzer, H.; Gobbi, A.; Bock, R.

1979-02-01

After an introduction, a position-sensitive ionization chamber, a parallel-plate detector, and a multiwire position-sensitive chamber are described. Then the data acquisition and analysis methods are considered. Furthermore, the experimental methods for a multi-parameter experiment are described. Finally, the measurement of gamma-ray and neutron multiplicities and sequential fission is considered, and the results are presented. (HSI) [de

Position-sensitive superconductor detectors

International Nuclear Information System (INIS)

Kurakado, M.; Taniguchi, K.

2016-01-01

Superconducting tunnel junction (STJ) detectors and superconducting transition- edge sensors (TESs) are representative superconductor detectors having energy resolutions much higher than those of semiconductor detectors. STJ detectors are thin, thereby making it suitable for detecting low-energy X rays. The signals of STJ detectors are more than 100 times faster than those of TESs. By contrast, TESs are microcalorimeters that measure the radiation energy from the change in the temperature. Therefore, signals are slow and their time constants are typically several hundreds of μs. However, TESs possess excellent energy resolutions. For example, TESs have a resolution of 1.6 eV for 5.9-keV X rays. An array of STJs or TESs can be used as a pixel detector. Superconducting series-junction detectors (SSJDs) comprise multiple STJs and a single-crystal substrate that acts as a radiation absorber. SSJDs are also position sensitive, and their energy resolutions are higher than those of semiconductor detectors. In this paper, we give an overview of position-sensitive superconductor detectors.

Compton recoil electron tracking with silicon strip detectors

International Nuclear Information System (INIS)

O'Neill, T.J.; Ait-Ouamer, F.; Schwartz, I.; Tumer, O.T.; White, R.S.; Zych, A.D.

1992-01-01

The application of silicon strip detectors to Compton gamma ray astronomy telescopes is described in this paper. The Silicon Compton Recoil Telescope (SCRT) tracks Compton recoil electrons in silicon strip converters to provide a unique direction for Compton scattered gamma rays above 1 MeV. With strip detectors of modest positional and energy resolutions of 1 mm FWHM and 3% at 662 keV, respectively, 'true imaging' can be achieved to provide an order of magnitude improvement in sensitivity to 1.6 x 10 - 6 γ/cm 2 -s at 2 MeV. The results of extensive Monte Carlo calculations of recoil electrons traversing multiple layers of 200 micron silicon wafers are presented. Multiple Coulomb scattering of the recoil electron in the silicon wafer of the Compton interaction and the next adjacent wafer is the basic limitation to determining the electron's initial direction

On selecting a sensitive region thickness of a silicon semiconductor detector for operation under counting conditions

International Nuclear Information System (INIS)

Pronkin, N.S.; Khakhalin, V.V.

1972-01-01

The paper discusses the selection of a thickness of a sensitive area of a silicon semiconductor detector, used in the count regime based on the signal to noise ratio and β-radiation registration efficiency. (author)

Recyclability of mixed office waste papers containing pressure sensitive adhesives and silicone release liners

Science.gov (United States)

Julie Hess; Roberta Sena-Gomes; Lisa Davie; Marguerite Sykes

2001-01-01

Increased use of pressure sensitive adhesives for labels and stamps has introduced another contaminant into the office paper stream: silicone- coated release liners. This study examines methods and conditions for removal of contaminants, including these liners, from a typical batch of discarded office papers. Removal of contaminants contained in the furnish were...

Overview of CMS robotic silicon module assembly hardware based on Aerotech Gantry Positioning system.

CERN Multimedia

Honma, Alan

1999-01-01

The goal of the robotic silicon module assembly pilot project is to fully automate the gluing and pick and placement of silicon sensors and front-end hybrid onto a carbon-fibre frame. The basis for thesystem is the Aerotech Gantry Positioning System (AGS10000) machineshown in the centre of the picture. To the left is the PC which contains the controller card and runs the user interface. To the rightis the rack of associated electronics which interfaces with the CERNbuilt tooling and vacuum chuck system.

Multipoint alignment monitoring with amorphous silicon position detectors in a complex light path

Energy Technology Data Exchange (ETDEWEB)

Alberdi, J.; Arce, P.; Barcala, J.M.; Calvo, E. [CIEMAT, Madrid (Spain); Ferrando, A., E-mail: antonio.ferrando@ciemat.e [CIEMAT, Madrid (Spain); Josa, M.I.; Molinero, A.; Navarrete, J.; Oller, J.C.; Yuste, C. [CIEMAT, Madrid (Spain); Calderon, A.; Gomez, G.; Gonzalez-Sanchez, F.J.; Martinez-Rivero, C.; Matorras, F.; Rodrigo, T.; Ruiz-Arbol, P.; Sobron, M.; Vila, I.; Virto, A.L. [Instituto de Fisica de Cantabria. CSIC-University of Cantabria, Santander (Spain)

2010-12-01

This document presents an application of the new generation of amorphous silicon position detecting (ASPD) sensors to multipoint alignment. Twelve units are monitored along a 20 m long laser beam, where the light path is deflected by 90{sup o} using a pentaprism.

Multipoint alignment monitoring with amorphous silicon position detectors in a complex light path

International Nuclear Information System (INIS)

Alberdi, J.; Arce, P.; Barcala, J.M.; Calvo, E.; Ferrando, A.; Josa, M.I.; Molinero, A.; Navarrete, J.; Oller, J.C.; Yuste, C.; Calderon, A.; Gomez, G.; Gonzalez-Sanchez, F.J.; Martinez-Rivero, C.; Matorras, F.; Rodrigo, T.; Ruiz-Arbol, P.; Sobron, M.; Vila, I.; Virto, A.L.

2010-01-01

This document presents an application of the new generation of amorphous silicon position detecting (ASPD) sensors to multipoint alignment. Twelve units are monitored along a 20 m long laser beam, where the light path is deflected by 90 o using a pentaprism.

Characterization of three high efficiency and blue sensitive silicon photomultipliers

Energy Technology Data Exchange (ETDEWEB)

Otte, Adam Nepomuk, E-mail: otte@gatech.edu; Garcia, Distefano; Nguyen, Thanh; Purushotham, Dhruv

2017-02-21

We report about the optical and electrical characterization of three high efficiency and blue sensitive Silicon photomultipliers from FBK, Hamamatsu, and SensL. Key features of the tested devices when operated at 90% breakdown probability are peak photon detection efficiencies between 40% and 55%, temperature dependencies of gain and PDE that are less than 1%/°C, dark rates of ∼50 kHz/mm{sup 2} at room temperature, afterpulsing of about 2%, and direct optical crosstalk between 6% and 20%. The characteristics of all three devices impressively demonstrate how the Silicon-photomultiplier technology has improved over the past ten years. It is further demonstrated how the voltage and temperature characteristics of a number of quantities can be parameterized on the basis of physical models. The models provide a deeper understanding of the device characteristics over a wide bias and temperature range. They also serve as examples how producers could provide the characteristics of their SiPMs to users. A standardized parameterization of SiPMs would enable users to find the optimal SiPM for their application and the operating point of SiPMs without having to perform measurements thus significantly reducing design and development cycles.

A deep-level transient spectroscopy study of gamma-ray irradiation on the passivation properties of silicon nitride layer on silicon

Science.gov (United States)

Dong, Peng; Yu, Xuegong; Ma, Yao; Xie, Meng; Li, Yun; Huang, Chunlai; Li, Mo; Dai, Gang; Zhang, Jian

2017-08-01

Plasma-enhanced chemical vapor deposited silicon nitride (SiNx) films are extensively used as passivation material in the solar cell industry. Such SiNx passivation layers are the most sensitive part to gamma-ray irradiation in solar cells. In this work, deep-level transient spectroscopy has been applied to analyse the influence of gamma-ray irradiation on the passivation properties of SiNx layer on silicon. It is shown that the effective carrier lifetime decreases with the irradiation dose. At the same time, the interface state density is significantly increased after irradiation, and its energy distribution is broadened and shifts deeper with respect to the conduction band edge, which makes the interface states becoming more efficient recombination centers for carriers. Besides, C-V characteristics show a progressive negative shift with increasing dose, indicating the generation of effective positive charges in SiNx films. Such positive charges are beneficial for shielding holes from the n-type silicon substrates, i. e. the field-effect passivation. However, based on the reduced carrier lifetime after irradiation, it can be inferred that the irradiation induced interface defects play a dominant role over the trapped positive charges, and therefore lead to the degradation of passivation properties of SiNx on silicon.

Digital position sensitive discrimination for 2-dimensional scintillation detectors

International Nuclear Information System (INIS)

Engels, R.; Reinartz, R.; Reinhart, P.

1996-01-01

The energy sensitivity of a two-dimensional scintillation gamma detector based on position sensitive photomultipliers has been minimized by a digital differential discrimination unit. Since the photomultiplier gain is position-dependent by 50%, a discrimination unit has been developed where digital upper and lower discrimination levels are set due to the position-dependent photomultiplier gain obtained from calibration measurements. Depending on the spatial resolution there can be up to 65.536 position-sensitive discriminator levels defining energy windows. By this method, narrow discriminator windows can be used for reducing the low and high energy quanta without effecting the sensitivity of the detector. The new discrimination method, its performance and test measurements with gamma rays will be described. Furthermore experimental results are presented

POWRS: position-sensitive motif discovery.

Directory of Open Access Journals (Sweden)

Ian W Davis

Full Text Available Transcription factors and the short, often degenerate DNA sequences they recognize are central regulators of gene expression, but their regulatory code is challenging to dissect experimentally. Thus, computational approaches have long been used to identify putative regulatory elements from the patterns in promoter sequences. Here we present a new algorithm "POWRS" (POsition-sensitive WoRd Set for identifying regulatory sequence motifs, specifically developed to address two common shortcomings of existing algorithms. First, POWRS uses the position-specific enrichment of regulatory elements near transcription start sites to significantly increase sensitivity, while providing new information about the preferred localization of those elements. Second, POWRS forgoes position weight matrices for a discrete motif representation that appears more resistant to over-generalization. We apply this algorithm to discover sequences related to constitutive, high-level gene expression in the model plant Arabidopsis thaliana, and then experimentally validate the importance of those elements by systematically mutating two endogenous promoters and measuring the effect on gene expression levels. This provides a foundation for future efforts to rationally engineer gene expression in plants, a problem of great importance in developing biotech crop varieties.BSD-licensed Python code at http://grassrootsbio.com/papers/powrs/.

Imaging monolithic silicon detector telescopes

International Nuclear Information System (INIS)

Amorini, F.; Sipala, V.; Cardella, G.; Boiano, C.; Carbone, B.; Cosentino, L.; Costa, E.; Di Pietro, A.; Emanuele, U.; Fallica, G.; Figuera, P.; Finocchiaro, P.; La Guidara, E.; Marchetta, C.; Pappalardo, A.; Piazza, A.; Randazzo, N.; Rizzo, F.; Russo, G.V.; Russotto, P.

2008-01-01

We show the results of some test beams performed on a new monolithic strip silicon detector telescope developed in collaboration with the INFN and ST-microelectronics. Using an appropriate design, the induction on the ΔE stages, generated by the charge released in the E stage, was used to obtain the position of the detected particle. The position measurement, together with the low threshold for particle charge identification, allows the new detector to be used for a large variety of applications due to its sensitivity of only a few microns measured in both directions

Color sensitive silicon photomultiplers with micro-cell level encoding for DOI PET detectors

Science.gov (United States)

Shimazoe, Kenji; Koyama, Akihiro; Takahashi, Hiroyuki; Ganka, Thomas; Iskra, Peter; Marquez Seco, Alicia; Schneider, Florian; Wiest, Florian

2017-11-01

There have been many studies on Depth Of Interaction (DOI) identification for high resolution Positron Emission Tomography (PET) systems, including those on phoswich detectors, double-sided readout, light sharing methods, and wavelength discrimination. The wavelength discrimination method utilizes the difference in wavelength of stacked scintillators and requires a color sensitive photodetector. Here, a new silicon photomultiplier (SiPM) coupled to a color filter (colorSiPM) was designed and fabricated for DOI detection. The fabricated colorSiPM has two anode readouts that are sensitive to blue and green color. The colorSiPM's response and DOI identification capability for stacked GAGG and LYSO crystals are characterized. The fabricated colorSiPM is sensitive enough to detect a peak of 662 keV from a 137 Cs source.

Amorphous Silicon-Germanium Films with Embedded Nanocrystals for Thermal Detectors with Very High Sensitivity

Directory of Open Access Journals (Sweden)

Cesar Calleja

2016-01-01

Full Text Available We have optimized the deposition conditions of amorphous silicon-germanium films with embedded nanocrystals in a plasma enhanced chemical vapor deposition (PECVD reactor, working at a standard frequency of 13.56 MHz. The objective was to produce films with very large Temperature Coefficient of Resistance (TCR, which is a signature of the sensitivity in thermal detectors (microbolometers. Morphological, electrical, and optical characterization were performed in the films, and we found optimal conditions for obtaining films with very high values of thermal coefficient of resistance (TCR = 7.9% K−1. Our results show that amorphous silicon-germanium films with embedded nanocrystals can be used as thermosensitive films in high performance infrared focal plane arrays (IRFPAs used in commercial thermal cameras.

Position-controlled epitaxial III-V nanowires on silicon

NARCIS (Netherlands)

Roest, A.L.; Verheijen, M.A.; Wunnicke, O.; Serafin, S.N.; Wondergem, H.J.; Bakkers, E.P.A.M.

2006-01-01

We show the epitaxial integration of III-V semiconductor nanowires with silicon technology. The wires are grown by the VLS mechanism with laser ablation as well as metal-organic vapour phase epitaxy. The hetero-epitaxial growth of the III-V nanowires on silicon was confirmed with x-ray diffraction

Silicon photomultiplier as a detector of Cherenkov photons

International Nuclear Information System (INIS)

Korpar, S.; Dolenec, R.; Hara, K.; Iijima, T.; Krizan, P.; Mazuka, Y.; Pestotnik, R.; Stanovnik, A.; Yamaoka, M.

2008-01-01

A novel photon detector-i.e. the silicon photomultiplier-whose main advantage over conventional photomultiplier tubes is the operation in high magnetic fields, has been tested as a photon detector in a proximity focusing RICH with aerogel radiator. This type of RICH counter is proposed for the upgrade of the Belle detector at the KEK B-factory. Recently produced silicon photomultipliers show less noise and have larger size, which are important issues for a large area photon detector. We measured the single photon pulse height distribution, the timing resolution and the position sensitivity for different silicon photomultipliers (Hamamatsu MPPC HC025, HC050, and HC100). The silicon photomultipliers were then used to detect Cherenkov photons emitted by cosmic ray particles in a proximity focusing aerogel RICH. Various light guides were investigated in order to increase the detection efficiency

Development of Position-Sensitive Magnetic Calorimeters for X-Ray Astronomy

Science.gov (United States)

Bandler, SImon; Stevenson, Thomas; Hsieh, Wen-Ting

2011-01-01

pixilated array of x-ray absorbers shares fewer numbers of temperature sensors. A means of discriminating the signals from different absorber positions, however, needs to be built into the device for each sensor. The design concept for the device is such that the shape of the temperature pulse with time depends on the location of the absorber. This inherent position sensitivity of the signal is then analyzed to determine the location of the event precisely, effectively yielding one device with many sub-pixels. With such devices, the total number of electronic channels required to read out a given number of pixels is significantly reduced. PoSMs were developed that consist of four discrete absorbers connected to a single magnetic sensor. The design concept can be extended to more than four absorbers per sensor. The thermal conductance between the sensor and each absorber is different by design and consequently, the pulse shapes are different depending upon which absorber the xrays are received, allowing position discrimination. A magnetic sensor was used in which a paramagnetic Au:Er temperature-sensitive material is located in a weak magnetic field. Deposition of energy from an x-ray photon causes an increase in temperature, which leads to a change of magnetization of the paramagnetic sensor, which is subsequently read out using a low noise dc-SQUID. The PoSM microcalorimeters are fully microfabricated: the Au:Er sensor is located above the meander, with a thin insulation gap in between. For this position-sensitive device, four electroplated absorbers are thermally linked to the sensor via heat links of different thermal conductance. One pixel is identical to that of a single-pixel design, consisting of an overhanging absorber fabricated directly on top of the sensor. It is therefore very strongly thermally coupled to it. The three other absorbers are supported directly on a silicon-nitride membrane. These absorbers are thermally coupled to the sensor via Ti (5 nm)/Au250 nm

Porosity dependence of positive magnetoconductance in n-type porous silicon

Energy Technology Data Exchange (ETDEWEB)

Chouaibi, Bassem; Radaoui, Moufid; Benfredj, Amel; Bouchriha, Habib [Laboratoire Materiaux Avances et Phenomenes Quantiques, Faculte des Sciences de Tunis, Universite El Manar, 2092 Campus universitaire, Tunis (Tunisia); Romdhane, Samir [Laboratoire Materiaux Avances et Phenomenes Quantiques, Faculte des Sciences de Tunis, Universite El Manar, 2092 Campus universitaire, Tunis (Tunisia); Faculte des Sciences de Bizerte, 7021 Zarzouna, Bizerte, Universite de Carthage (Tunisia); Bouaicha, Mongi [Laboratoire de Photovoltaique, Centre de Recherches et des Technologies de l' Energie, BP 95, Hammam-Lif 2050 (Tunisia)

2012-10-15

Positive magnetoconductance (MC) on n-type porous silicon (PS) based devices was observed at room temperature for low static magnetic field (under 6000 G). We found that the measured MC decreases when the film porosity is increased. Obtained results were analyzed by means of the quasi-1D weak localization (WL) theory. From the dependence of the MC vs. applied magnetic field, we determine the phase coherence length L{sup {phi}}. Good agreement between theoretical and experimental results was found (copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

A broadband-sensitive upconverter La(Ga0.5Sc0.5)O3:Er,Ni,Nb for crystalline silicon solar cells

International Nuclear Information System (INIS)

Takeda, Yasuhiko; Mizuno, Shintaro; Luitel, Hom Nath; Tani, Toshihiko

2016-01-01

We have developed an upconverter that significantly broadens the sensitive range, to overcome the shortcoming that conventional Er 3+ -doped upconverters used for crystalline silicon solar cells can utilize only a small portion of the solar spectrum at around 1.55 μm. We have designed the combination of the sensitizers and host material to utilize photons not absorbed by silicon or Er 3+ ions. Ni 2+ ions have been selected as the sensitizers that absorb photons in the wavelength range between the silicon absorption edge (1.1 μm) and the Er 3+ absorption band and transfer the energies to the Er 3+ emitters, with La(Ga,Sc)O 3 as the host material. The Ga to Sc ratio has been optimized to tune the location of the Ni 2+ absorption band for sufficient energy transfer. Co-doping with Nb 5+ ions is needed for charge balance to introduce divalent Ni 2+ ions into the trivalent Ga 3+ and Sc 3+ sites. In addition to 1.45–1.58 μm photons directly absorbed by the Er 3+ ions, we have demonstrated upconversion of 1.1–1.35 μm photons in the Ni 2+ absorption band to 0.98 μm photons, using 10% Er, 0.5% Ni, and 0.5% Nb-doped La(Ga 0.5 Sc 0.5 )O 3 . The broadband-sensitive upconverter developed here can improve conversion efficiency of crystalline silicon solar cells more notably than conventional ones

A silicon integrated micro nano-positioning XY-stage for nano-manipulation

International Nuclear Information System (INIS)

Sun Lining; Wang Jiachou; Rong Weibin; Li Xinxin; Bao Haifei

2008-01-01

An integrated micro XY-stage with a 2 × 2 mm 2 movable table is designed and fabricated for application in nanometer-scale operation and nanometric positioning precision. The device integrates the functions of both actuating and sensing in a monolithic chip and is mainly composed of a silicon-based XY-stage, comb-drive actuator and a displacement sensor, which are developed by using double-sided bulk-micromachining technology. The high-aspect-ratio comb-driven XY-stage is achieved by deep reactive ion etching (DRIE) on both sides of the wafer. The displacement sensor is formed on four vertical sidewall surface piezoresistors with a full Wheatstone bridge circuit, where a novel fabrication process of a vertical sidewall surface piezoresistor is proposed. Comprehensive design and analysis of the comb actuator, the piezoresistive displacement sensor and the XY-stage are given in full detail, and the experimental results verify the design and fabrication of the device. The final realization of the device shows that the sensitivity of the fabricated piezoresistive sensors is better than 1.17 mV µm −1 without amplification, and the linearity is better than 0.814%. Under 28.5 V driving voltage, a ±10 µm single-axis displacement is measured without crosstalk and the resonant frequency is measured at 983 Hz in air

Signal processors for position-sensitive detectors

Energy Technology Data Exchange (ETDEWEB)

Hasegawa, Ken-ichi [Hosei Univ., Koganei, Tokyo (Japan). Coll. of Engineering

1996-07-01

Position-sensitive detectors (PSD) are widely used in following various fields: condensed matter studies, material engineering, medical radiology particle physics, astrophysics and industrial applications. X-ray diffraction analysis is one of the field where PSDs are the most important instruments. In this field, many types of PSAs are employed: position-sensitive proportional counters (PSPC), multi-wire proportional chambers (MWPC), imaging plates, image intensifiers combined CCD cameras and semiconductor array devices. Two readout systems used for PSDs, where one is a charge-division type with high stability and the other is an encoder with multiple delay, line readout circuits useful for fast counting, were reported in this paper. The multiple delay line encoding system can be applicable to high counting rate 1D and 2D gas proportional detectors. (G.K.)

The measurement of phi 60 mm x 600 mu m silicon PIN detector gamma sensitivity and time respond

CERN Document Server

Hu Meng Chun; Ye Wen Ying

2002-01-01

phi 60 mm x 600 mu m silicon PIN detector is a large area and high sensitive one which has been developed in near years. The authors have measured their gamma sensitivity and the time response. The experiment and theoretical calculated results in: sup 6 sup 0 Co gamma sensitivity is about 5 fC centre dot cm sup 2 /MeV, the rise time is about 10 ns and the half-high-width time is about 35 ns

Submicron position-sensitive detector

Energy Technology Data Exchange (ETDEWEB)

Pugatch, V M; Rosenfeld, A B; Litovchenko, P G; Barabash, L I; Nemets, O F; Pavlenko, Yu N; Vasiliev, Yu O [Ukrainian Academy of Sciences, Kiev (Ukraine). Inst. for Nuclear Research

1992-08-01

A method has been developed to measure precisely the coordinates of charged particles incident between adjacent strips of a strip detector. The position sensitivity of an inter-strip gap has been studied by means of a pulsed laser beam and irradiation by [alpha]-particles of a [sup 226]Ra-source. The capacitive division of charge generated by the incident particle depends on the position of its track. Its coordinates were determined by two-dimensional amplitude analysis of the charges collected by neighbouring strips. This method of coordinate determination applied to studies of spatial and energy distributions of electromagnetic as well as charged particle beams (including radioactive ion beams) of low intensity could provide the highest level of the precision limited by the track dimensions of charged particles, i.e. percents of a micrometer. (orig.).

Position sensitive detector used to detect beam profile

International Nuclear Information System (INIS)

Zhao Xiaoyan; Zhao Zhizheng; Zu Kailing; Zheng Jianhua; Wang Yifang

2003-01-01

In order to study the detecting system of the residual-gas beam profile, we introduce the principle and construction of the Position Sensitive Detector (PSD). The performance of PSD is tested. Position resolution, position linearity, detection efficiency and background are obtained

Characterization of X3 Silicon Detectors for the ELISSA Array at ELI-NP

Science.gov (United States)

Chesnevskaya, S.; Balabanski, D. L.; Choudhury, D.; Cognata, M. La; Constantin, P.; Filipescu, D. M.; Ghita, D. G.; Guardo, G. L.; Lattuada, D.; Matei, C.; Rotaru, A.; Spitaleri, C.; State, A.; Xu, Y.

2018-01-01

Position-sensitive silicon strip detectors represent one of the best solutions for the detection of charged particles as they provide good energy and position resolution over a large range of energies. A silicon array coupled with the gamma beams at the ELI-NP facility would allow measuring photodissociation reactions of interest for Big Bang Nucleosynthesis and on heavy nuclei intervening in the p-process. Forty X3 detectors for our ELISSA (ELI-NP Silicon Strip Detectors Array) project have been recently purchased and tested. We investigated several specifications, such as leakage currents, depletion voltage, and detector stability under vacuum. The energy and position resolution, and ballistic deficit were measured and analyzed. This paper presents the main results of our extensive testing. The measured energy resolution for the X3 detectors is better than results published for similar arrays (ANASEN or ORRUBA).

Effect of preliminary annealing of silicon substrates on the spectral sensitivity of photodetectors in bipolar integrated circuits

International Nuclear Information System (INIS)

Blynskij, V.I.; Bozhatkin, O.A.; Golub, E.S.; Lemeshevskaya, A.M.; Shvedov, S.V.

2010-01-01

We examine the results of an effect of preliminary annealing on the spectral sensitivity of photodetectors in bipolar integrated circuits, formed in silicon grown by the Czochralski method. We demonstrate the possibility of substantially improving the sensitivity of photodetectors in the infrared region of the spectrum with twostep annealing. The observed effect is explained by participation of oxidation in the gettering process, where oxidation precedes formation of a buried n + layer in the substrate. (authors)

Two-dimensional position sensitive Si(Li) detector

International Nuclear Information System (INIS)

Walton, J.T.; Hubbard, G.S.; Haller, E.E.; Sommer, H.A.

1978-11-01

Circular, large-area two-dimensional Si(Li) position sensitive detectors have been fabricated. The detectors employ a thin lithium-diffused n + resisitive layer for one contact and a boron implanted p + resistive layer for the second contact. A position resolution of the order of 100 μm is indicated

High Sensitivity and High Detection Specificity of Gold-Nanoparticle-Grafted Nanostructured Silicon Mass Spectrometry for Glucose Analysis.

Science.gov (United States)

Tsao, Chia-Wen; Yang, Zhi-Jie

2015-10-14

Desorption/ionization on silicon (DIOS) is a high-performance matrix-free mass spectrometry (MS) analysis method that involves using silicon nanostructures as a matrix for MS desorption/ionization. In this study, gold nanoparticles grafted onto a nanostructured silicon (AuNPs-nSi) surface were demonstrated as a DIOS-MS analysis approach with high sensitivity and high detection specificity for glucose detection. A glucose sample deposited on the AuNPs-nSi surface was directly catalyzed to negatively charged gluconic acid molecules on a single AuNPs-nSi chip for MS analysis. The AuNPs-nSi surface was fabricated using two electroless deposition steps and one electroless etching step. The effects of the electroless fabrication parameters on the glucose detection efficiency were evaluated. Practical application of AuNPs-nSi MS glucose analysis in urine samples was also demonstrated in this study.

XPS study of palladium sensitized nano porous silicon thin film

Indian Academy of Sciences (India)

Keywords. Porous silicon; passivation; palladium; oxidation; XPS. Abstract. Nano porous silicon (PS) was formed on -type monocrystalline silicon of 2–5 cm resistivity and (100) orientation by electrochemical anodization method using HF and ethanol as the electrolytes. High density of surface states, arising due to its ...

Scintillating fibre detectors using position-sensitive photomultipliers

International Nuclear Information System (INIS)

Agoritsas, V.; Bergdolt, A.M.; Bing, O.; Bravar, A.; Ditta, J.; Drevenak, R.

1995-01-01

Scintillating fibre technology has made substantial progress, and has demonstrated great potential for fast tracking and triggering in high luminosity experiments in Particle Physics. Some recent issues of the RD-17 project at CERN are presented for fast and precise readout of scintillating fibre arrays, as well as for upgrade of position-sensitive photomultipliers. Excellent matching of the scintillating fibre and the position-sensitive photomultiplier, in particular in time characteristics, allowed to achieve excellent detector performances, typically a spatial resolution of ∼ 125 μm with time resolution better than 1 ns and detection efficiency greater than 95%. (author)10 refs.; 25 figs.; 1 tab

Enhanced Raman scattering in porous silicon grating.

Science.gov (United States)

Wang, Jiajia; Jia, Zhenhong; Lv, Changwu

2018-03-19

The enhancement of Raman signal on monocrystalline silicon gratings with varying groove depths and on porous silicon grating were studied for a highly sensitive surface enhanced Raman scattering (SERS) response. In the experiment conducted, porous silicon gratings were fabricated. Silver nanoparticles (Ag NPs) were then deposited on the porous silicon grating to enhance the Raman signal of the detective objects. Results show that the enhancement of Raman signal on silicon grating improved when groove depth increased. The enhanced performance of Raman signal on porous silicon grating was also further improved. The Rhodamine SERS response based on Ag NPs/ porous silicon grating substrates was enhanced relative to the SERS response on Ag NPs/ porous silicon substrates. Ag NPs / porous silicon grating SERS substrate system achieved a highly sensitive SERS response due to the coupling of various Raman enhancement factors.

A position-sensitive scintillation detector for two-dimensional angular correlation of annihilation radiation using metal-package position-sensitive photomultiplier tubes

International Nuclear Information System (INIS)

Inoue, Koji; Nagai, Yasuyoshi; Saito, Haruo; Nagashima, Yasuyuki; Hyodo, Toshio; Muramatsu, Shinichi; Nagai, Shota

1999-01-01

We have constructed and tested a prototype of a new position sensitive γ-ray detector which consists of an array of 2.6x2.6x18 mm 3 BGO scintillator blocks, a light guide, and four metal-package position-sensitive photomultiplier tubes (R5900-00-C8) recently developed by Hamamatsu Photonics Co. Ltd. Scalability of the detector of this type makes it possible to construct a larger detector using many PS-PMTs, which will be useful for the two-dimensional angular correlation of annihilation radiation apparatus

Vantage sensitivity: individual differences in response to positive experiences.

Science.gov (United States)

Pluess, Michael; Belsky, Jay

2013-07-01

The notion that some people are more vulnerable to adversity as a function of inherent risk characteristics is widely embraced in most fields of psychology. This is reflected in the popularity of the diathesis-stress framework, which has received a vast amount of empirical support over the years. Much less effort has been directed toward the investigation of endogenous factors associated with variability in response to positive influences. One reason for the failure to investigate individual differences in response to positive experiences as a function of endogenous factors may be the absence of adequate theoretical frameworks. According to the differential-susceptibility hypothesis, individuals generally vary in their developmental plasticity regardless of whether they are exposed to negative or positive influences--a notion derived from evolutionary reasoning. On the basis of this now well-supported proposition, we advance herein the new concept of vantage sensitivity, reflecting variation in response to exclusively positive experiences as a function of individual endogenous characteristics. After distinguishing vantage sensitivity from theoretically related concepts of differential-susceptibility and resilience, we review some recent empirical evidence for vantage sensitivity featuring behavioral, physiological, and genetic factors as moderators of a wide range of positive experiences ranging from family environment and psychotherapy to educational intervention. Thereafter, we discuss genetic and environmental factors contributing to individual differences in vantage sensitivity, potential mechanisms underlying vantage sensitivity, and practical implications. 2013 APA, all rights reserved

Detection of charged particles in amorphous silicon layers

International Nuclear Information System (INIS)

Perez-Mendez, V.; Morel, J.; Kaplan, S.N.; Street, R.A.

1986-02-01

The successful development of radiation detectors made from amorphous silicon could offer the possibility for relatively easy construction of large area position-sensitive detectors. We have conducted a series of measurements with prototype detectors, on signals derived from alpha particles. The measurement results are compared with simple model calculations, and projections are made of potential applications in high-energy and nuclear physics

Nanowire size dependence on sensitivity of silicon nanowire field-effect transistor-based pH sensor

Science.gov (United States)

Lee, Ryoongbin; Kwon, Dae Woong; Kim, Sihyun; Kim, Sangwan; Mo, Hyun-Sun; Kim, Dae Hwan; Park, Byung-Gook

2017-12-01

In this study, we investigated the effects of nanowire size on the current sensitivity of silicon nanowire (SiNW) ion-sensitive field-effect transistors (ISFETs). The changes in on-current (I on) and resistance according to pH were measured in fabricated SiNW ISFETs of various lengths and widths. As a result, it was revealed that the sensitivity expressed as relative I on change improves as the width decreases. Through technology computer-aided design (TCAD) simulation analysis, the width dependence on the relative I on change can be explained by the observation that the target molecules located at the edge region along the channel width have a stronger effect on the sensitivity as the SiNW width is reduced. Additionally, the length dependence on the sensitivity can be understood in terms of the resistance ratio of the fixed parasitic resistance, including source/drain resistance, to the varying channel resistance as a function of channel length.

Analytical expression for position sensitivity of linear response beam position monitor having inter-electrode cross talk

Energy Technology Data Exchange (ETDEWEB)

Kumar, Mukesh, E-mail: mukeshk@rrcat.gov.in [Beam Diagnostics Section, Indus Operations, Beam Dynamics & Diagnostics Division, Raja Ramanna Centre for Advanced Technology, Indore, 452013 MP (India); Homi Bhabha National Institute, Training School Complex, Anushakti Nagar, Mumbai 400 094 (India); Ojha, A.; Garg, A.D.; Puntambekar, T.A. [Beam Diagnostics Section, Indus Operations, Beam Dynamics & Diagnostics Division, Raja Ramanna Centre for Advanced Technology, Indore, 452013 MP (India); Senecha, V.K. [Homi Bhabha National Institute, Training School Complex, Anushakti Nagar, Mumbai 400 094 (India); Ion Source Lab., Proton Linac & Superconducting Cavities Division, Raja Ramanna Centre for Advanced Technology, Indore, 452013 MP (India)

2017-02-01

According to the quasi electrostatic model of linear response capacitive beam position monitor (BPM), the position sensitivity of the device depends only on the aperture of the device and it is independent of processing frequency and load impedance. In practice, however, due to the inter-electrode capacitive coupling (cross talk), the actual position sensitivity of the device decreases with increasing frequency and load impedance. We have taken into account the inter-electrode capacitance to derive and propose a new analytical expression for the position sensitivity as a function of frequency and load impedance. The sensitivity of a linear response shoe-box type BPM has been obtained through simulation using CST Studio Suite to verify and confirm the validity of the new analytical equation. Good agreement between the simulation results and the new analytical expression suggest that this method can be exploited for proper designing of BPM.

Position-sensitive X-ray detectors

International Nuclear Information System (INIS)

Hendrix, J.

1982-01-01

In this review of the application of different types of position sensitive detectors to synchrotron radiation, discussion of the proportional counters based on the gas amplification principle forms a major part. Other topics reviewed are detector requirements, multiwire proportional chamber system, drift chamber type detectors, TV detectors, and recent developments, such as that based on a micro-channel plate as the amplifying element, and charge-coupled devices. (U.K.)

Internal alignment and position resolution of the silicon tracker of DAMPE determined with orbit data

Science.gov (United States)

Tykhonov, A.; Ambrosi, G.; Asfandiyarov, R.; Azzarello, P.; Bernardini, P.; Bertucci, B.; Bolognini, A.; Cadoux, F.; D'Amone, A.; De Benedittis, A.; De Mitri, I.; Di Santo, M.; Dong, Y. F.; Duranti, M.; D'Urso, D.; Fan, R. R.; Fusco, P.; Gallo, V.; Gao, M.; Gargano, F.; Garrappa, S.; Gong, K.; Ionica, M.; La Marra, D.; Lei, S. J.; Li, X.; Loparco, F.; Marsella, G.; Mazziotta, M. N.; Peng, W. X.; Qiao, R.; Salinas, M. M.; Surdo, A.; Vagelli, V.; Vitillo, S.; Wang, H. Y.; Wang, J. Z.; Wang, Z. M.; Wu, D.; Wu, X.; Zhang, F.; Zhang, J. Y.; Zhao, H.; Zimmer, S.

2018-06-01

The DArk Matter Particle Explorer (DAMPE) is a space-borne particle detector designed to probe electrons and gamma-rays in the few GeV to 10 TeV energy range, as well as cosmic-ray proton and nuclei components between 10 GeV and 100 TeV. The silicon-tungsten tracker-converter is a crucial component of DAMPE. It allows the direction of incoming photons converting into electron-positron pairs to be estimated, and the trajectory and charge (Z) of cosmic-ray particles to be identified. It consists of 768 silicon micro-strip sensors assembled in 6 double layers with a total active area of 6.6 m2. Silicon planes are interleaved with three layers of tungsten plates, resulting in about one radiation length of material in the tracker. Internal alignment parameters of the tracker have been determined on orbit, with non-showering protons and helium nuclei. We describe the alignment procedure and present the position resolution and alignment stability measurements.

Position-sensitive proportional counter

International Nuclear Information System (INIS)

Kopp, M.K.

1980-01-01

A position-sensitive proportional counter circuit uses a conventional (low-resistance, metal-wire anode) counter for spatial resolution of an ionizing event along the anode, which functions as an RC line. A pair of preamplifiers at the anode ends act as stabilized active-capacitance loads, each comprising a series-feedback, low-noise amplifier and a unity-gain, shunt-feedback amplifier whose output is connected through a feedback capacitor to the series-feedback amplifier input. The stabilized capacitance loading of the anode allows distributed RC-line position encoding and subsequent time difference decoding by sensing the difference in rise times of pulses at the anode ends where the difference is primarily in response to the distributed capacitance along the anode. This allows the use of lower resistance wire anodes for spatial radiation detection which simplifies the counter construction of handling of the anodes, and stabilizes the anode resistivity at high count rates (>10 6 counts/sec). (author)

Fluorodeoxyglucose--positive internal mammary lymph node in breast cancer patients with silicone implants: is it always metastatic cancer?

Science.gov (United States)

Soudack, Michalle; Yelin, Alon; Simansky, David; Ben-Nun, Alon

2013-07-01

Patients with breast cancer following mastectomy and silicone implant reconstruction may have enlarged internal mammary lymph nodes with pathological uptake on positron emission tomography with (18)F-fluorodeoxyglucose. This lymphadenopathy is usually considered as metastatic in nature, but has also been reported to be related to other conditions, including silicon migration. The purpose of this study was to determine the rate of metastatic disease in this unique group of patients. A retrospective comparative study of 12 female patients with breast cancer with silicone implants referred for biopsy due to isolated internal mammary lymph node fluorodeoxyglucose uptake on positron emission tomography. Five patients (41.6%) had histological findings related to silicone (n = 4) or non-specific inflammation (n = 1). The remaining 7 (58.3%) had histological evidence of cancer recurrence. There was no significant difference in the fluorodeoxyglucose-standardized uptake value between the two groups. Fluorodeoxyglucose-positive mammary lymph nodes in patients with breast cancer following silicone implant reconstruction may be due to metastatic deposits, non-specific inflammation or silicone migration. Clinical and imaging characteristics are insufficient in differentiating between these conditions. Biopsy is recommended prior to initiation of further treatment.

Comparative silicone breast implant evaluation using mammography, sonography, and magnetic resonance imaging: experience with 59 implants.

Science.gov (United States)

Ahn, C Y; DeBruhl, N D; Gorczyca, D P; Shaw, W W; Bassett, L W

1994-10-01

With the current controversy regarding the safety of silicone implants, the detection and evaluation of implant rupture are causing concern for both plastic surgeons and patients. Our study obtained comparative value analysis of mammography, sonography, and magnetic resonance imaging (MRI) in the detection of silicone implant rupture. Twenty-nine symptomatic patients (total of 59 silicone implants) were entered into the study. Intraoperative findings revealed 21 ruptured implants (36 percent). During physical examination, a positive "squeeze test" was highly suggestive of implant rupture. Mammograms were obtained of 51 implants (sensitivity 11 percent, specificity 89 percent). Sonography was performed on 57 implants (sensitivity 70 percent, specificity 92 percent). MRI was performed on 55 implants (sensitivity 81 percent, specificity 92 percent). Sonographically, implant rupture is demonstrated by the "stepladder sign." Double-lumen implants may appear as false-positive results for rupture on sonography. On MRI, the "linguine sign" represents disrupted fragments of a ruptured implant. The most reliable imaging modality for implant rupture detection is MRI, followed by sonogram. Mammogram is the least reliable. Our study supports the clinical indication and diagnostic value of sonogram and MRI in the evaluation of symptomatic breast implant patients.

Amorphous Silicon Position Detectors for the Link Alignment System of the CMS Detector: Users Handbook

International Nuclear Information System (INIS)

Calderon, A.; Gomez, G.; Gonzalez-Sanchez, F. J.; Martinez-Rivero, C.; Matorras, F.; Rodrigo, T.; Ruiz-Arbol, P.; Scodellaro, L.; Vila, I.; Virto, A. L.; Alberdi, J.; Arce, P.; Barcala, J.M.; Calvo, E.; Ferrando, A.; Josa, M. I.; Molinero, A.; Navarrete, J.; Oller, J. C.; Yuste, C.

2007-01-01

We present the general characteristics, calibration procedures and measured performance of the Amorphous Silicon Position Detectors installed in the Link Alignment System of the CMS Detector for laser beam detection and reconstruction and give the Data Base to be used as a Handbook during CMS operation. (Author) 10 refs

Amorphous Silicon Position Detectors for the Link Alignment System of the CMS Detector: Users Handbook

Energy Technology Data Exchange (ETDEWEB)

Calderon, A.; Gomez, G.; Gonzalez-Sanchez, F. J.; Martinez-Rivero, C.; Matorras, F.; Rodrigo, T.; Ruiz-Arbol, P.; Scodellaro, L.; Vila, I.; Virto, A. L.; Alberdi, J.; Arce, P.; Barcala, J.M.; Calvo, E.; Ferrando, A.; Josa, M. I.; Molinero, A.; Navarrete, J.; Oller, J. C.; Yuste, C.

2007-07-01

We present the general characteristics, calibration procedures and measured performance of the Amorphous Silicon Position Detectors installed in the Link Alignment System of the CMS Detector for laser beam detection and reconstruction and give the Data Base to be used as a Handbook during CMS operation. (Author) 10 refs.

Position-sensitive proportional counters using resistance-capacitance position encoding

International Nuclear Information System (INIS)

Kopp, M.K.; Borkowski, C.J.

1975-12-01

A new method was developed for encoding the position of individual photons, neutrons, or charged particles in proportional counters by using the distributed RC line characteristics of these counters. The signal processing is described and guidelines for the design and operation of these position sensitive proportional counters (PSPCs) are given. Using these guidelines, several prototypic PSPCs were constructed to improve the spatial resolution and shorten the signal processing time; for example, the intrinsic spatial uncertainty was reduced to 28 μ fwhm for alpha particles and 100 μ fwhm for low-energy x rays (2 to 6 keV). Also, the signal processing time was reduced to 0.6 μsec without seriously degrading the spatial resolution. These results have opened new fields of application of the RC position encoding method in imaging distributions of photons, charged particles, or neutrons in nuclear medicine, physics, and radiography

A setup for measurement of beam stability and position using position sensitive detector for Indus-1

International Nuclear Information System (INIS)

Nathwani, R.K.; Joshi, D.K.; Tyagi, Y.; Soni, R.S.; Puntambekar, T.A.; Pithawa, C.K.

2009-01-01

The 450 MeV electron synchrotron radiation source Indus-1 is operational at RRCAT. A set-up has been developed to measure the relative transverse positional stability of the electron beam and its position with microns resolution using position sensitive photodiodes. The set-up has been installed at the diagnostics beam line of Indus-1. Synchrotron light from photo physics beamline was reflected out by inserting a Ni coated mirror and was focused onto a duo-lateral position sensitive photodiode by using two mirrors of 1.25 meter focal length to obtain unity magnification. The set-up consists of a duo-lateral position sensitive detector (PSD), precision processing electronics and a PC based data acquisition system. A computer program captures the processed signals on to a PC using GPIB interface and displays vertical position of the beam in real time. The paper describes the salient features of the setup developed for measurement of beam stability. (author)

Simulation study of signal formation in position sensitive planar p-on-n silicon detectors after short range charge injection

International Nuclear Information System (INIS)

Peltola, T.; Eremin, V.; Verbitskaya, E.; Härkönen, J.

2017-01-01

Segmented silicon detectors (micropixel and microstrip) are the main type of detectors used in the inner trackers of Large Hadron Collider (LHC) experiments at CERN. Due to the high luminosity and eventual high fluence of energetic particles, detectors with fast response to fit the short shaping time of 20–25 ns and sufficient radiation hardness are required. Charge collection measurements carried out at the Ioffe Institute have shown a reversal of the pulse polarity in the detector response to short-range charge injection. Since the measured negative signal is about 30–60% of the peak positive signal, the effect strongly reduces the CCE even in non-irradiated detectors. For further investigation of the phenomenon the measurements have been reproduced by TCAD simulations. As for the measurements, the simulation study was applied for the p-on-n strip detectors similar in geometry to those developed for the ATLAS experiment and for the Ioffe Institute designed p-on-n strip detectors with each strip having a window in the metallization covering the p + implant, allowing the generation of electron-hole pairs under the strip implant. Red laser scans across the strips and the interstrip gap with varying laser diameters and Si-SiO 2 interface charge densities ( Q f ) were carried out. The results verify the experimentally observed negative response along the scan in the interstrip gap. When the laser spot is positioned on the strip p + implant the negative response vanishes and the collected charge at the active strip increases respectively. The simulation results offer a further insight and understanding of the influence of the oxide charge density in the signal formation. The main result of the study is that a threshold value of Q f , that enables negligible losses of collected charges, is defined. The observed effects and details of the detector response for different charge injection positions are discussed in the context of Ramo's theorem.

Simulation study of signal formation in position sensitive planar p-on-n silicon detectors after short range charge injection

Science.gov (United States)

Peltola, T.; Eremin, V.; Verbitskaya, E.; Härkönen, J.

2017-09-01

Segmented silicon detectors (micropixel and microstrip) are the main type of detectors used in the inner trackers of Large Hadron Collider (LHC) experiments at CERN. Due to the high luminosity and eventual high fluence of energetic particles, detectors with fast response to fit the short shaping time of 20-25 ns and sufficient radiation hardness are required. Charge collection measurements carried out at the Ioffe Institute have shown a reversal of the pulse polarity in the detector response to short-range charge injection. Since the measured negative signal is about 30-60% of the peak positive signal, the effect strongly reduces the CCE even in non-irradiated detectors. For further investigation of the phenomenon the measurements have been reproduced by TCAD simulations. As for the measurements, the simulation study was applied for the p-on-n strip detectors similar in geometry to those developed for the ATLAS experiment and for the Ioffe Institute designed p-on-n strip detectors with each strip having a window in the metallization covering the p+ implant, allowing the generation of electron-hole pairs under the strip implant. Red laser scans across the strips and the interstrip gap with varying laser diameters and Si-SiO2 interface charge densities (Qf) were carried out. The results verify the experimentally observed negative response along the scan in the interstrip gap. When the laser spot is positioned on the strip p+ implant the negative response vanishes and the collected charge at the active strip increases respectively. The simulation results offer a further insight and understanding of the influence of the oxide charge density in the signal formation. The main result of the study is that a threshold value of Qf, that enables negligible losses of collected charges, is defined. The observed effects and details of the detector response for different charge injection positions are discussed in the context of Ramo's theorem.

Detection of charged particles in amorphous silicon layers

International Nuclear Information System (INIS)

Kaplan, S.N.; Morel, J.R.; Mulera, T.A.; Perez-Mendez, V.; Schnurmacher, G.; Street, R.A.

1985-10-01

The successful development of radiation detectors made from amorphous silicon could offer the possibility for relatively easy construction of large area position-sensitive detectors. We have conducted a series of measurements with prototype detectors, on signals derived from alpha particles. The measurement results are compared with simple model calculations, and projections are made of potential applications in high-energy and nuclear physics. 4 refs., 7 figs

Cascaded nano-porous silicon for high sensitive biosensing and functional group distinguishing by Mid-IR spectra.

Science.gov (United States)

Nguyen, Minh-Hang; Tsai, Hau-Jie; Wu, Jen-Kuei; Wu, Yi-Shiuan; Lee, Ming-Chang; Tseng, Fan-Gang

2013-09-15

We present a chemical-biosensor in the Mid-IR range and based on cascaded porous silicon made on p- and n-type (100) silicon substrates of resistivities between 0.001Ωcm and 0.005Ωcm. The stacked porous layers of various porosities (20-80%) and thicknesses (5-9μm) are formed by successive electrochemical etchings with different current densities. Working with FTIR technique that possesses fast response, high sensitivity, and capability of detecting and identifying functional groups, the cascaded porous structures provided enhanced refractive index sensitivities and reduced detection limits in chemical and biodetection. The largest wavenumber shifts were 50cm(-1)/mM obtained for d-(+)-glucose and 96cm(-1)/μg/mL for Cy5-conjungated Rabbit Anti-Mouse IgG. The lowest detectable concentration of glucose was 80μM (1.4mg/mL) with PS porosity of 40% and thickness of about 9μm while it was 40ng/mL for Cy5-conjugated Rabbit Anti-Mouse IgG which is 2.5×10(5) folds better than those in literature. Copyright © 2013 Elsevier B.V. All rights reserved.

A two-dimensional low energy gamma-ray position sensitive detector

International Nuclear Information System (INIS)

Charalambous, P.M.; Dean, A.J.; Drane, M.; Gil, A.; Stephen, J.B.; Young, N.G.S.; Barbareschi, L.; Perotti, F.; Villa, G.; Badiali, M.; La Padula, C.; Polcaro, F.; Ubertini, P.

1984-01-01

An array of 1-dimensional position sensitive detectors designed to operate over the photon energy range 0.2-10.0 MeV, so as to form an efficient 2-dimensional position sensitive detection plane is described. A series of experimental tests has been carried out to evaluate and confirm the computed capabilities. (orig.)

Position sensitive regions in a generic radiation sensor based on single event upsets in dynamic RAMs

International Nuclear Information System (INIS)

Darambara, D.G.; Spyrou, N.M.

1997-01-01

Modern integrated circuits are highly complex systems and, as such, are susceptible to occasional failures. Semiconductor memory devices, particularly dynamic random access memories (dRAMs), are subject to random, transient single event upsets (SEUs) created by energetic ionizing radiation. These radiation-induced soft failures in the stored data of silicon based memory chips provide the foundation for a new, highly efficient, low cost generic radiation sensor. The susceptibility and the detection efficiency of a given dRAM device to SEUs is a complicated function of the circuit design and geometry, the operating conditions and the physics of the charge collection mechanisms involved. Typically, soft error rates measure the cumulative response of all sensitive regions of the memory by broad area chip exposure in ionizing radiation environments. However, this study shows that many regions of a dynamic memory are competing charge collection centres having different upset thresholds. The contribution to soft fails from discrete regions or individual circuit elements of the memory device is unambiguously separated. Hence the use of the dRAM as a position sensitive radiation detector, with high spatial resolution, is assessed and demonstrated. (orig.)

Depression reduces perceptual sensitivity for positive words and pictures.

Science.gov (United States)

Atchley, Ruth Ann; Ilardi, Stephen S; Young, Keith M; Stroupe, Natalie N; O'Hare, Aminda J; Bistricky, Steven L; Collison, Elizabeth; Gibson, Linzi; Schuster, Jonathan; Lepping, Rebecca J

2012-01-01

There is evidence of maladaptive attentional biases for lexical information (e.g., Atchley, Ilardi, & Enloe, 2003; Atchley, Stringer, Mathias, Ilardi, & Minatrea, 2007) and for pictographic stimuli (e.g., Gotlib, Krasnoperova, Yue, & Joormann, 2004) among patients with depression. The current research looks for depressotypic processing biases among depressed out-patients and non-clinical controls, using both verbal and pictorial stimuli. A d' measure (sensitivity index) was used to examine each participant's perceptual sensitivity threshold. Never-depressed controls evidenced a detection bias for positive picture stimuli, while depressed participants had no such bias. With verbal stimuli, depressed individuals showed specific decrements in the detection of positive person-referent words (WINNER), but not with positive non-person-referent words (SUNSHINE) or with negative words. Never-depressed participants showed no such differences across word types. In the current study, depression is characterised both by an absence of the normal positivistic biases seen in individuals without mood disorders (consistent with McCabe & Gotlib, 1995), and by a specific reduction in sensitivity for person-referent positive information that might be inconsistent with depressotypic self-schemas.

Tunable detection sensitivity of opiates in urine via a label-free porous silicon competitive inhibition immunosensor.

Science.gov (United States)

Bonanno, Lisa M; Delouise, Lisa A

2010-01-15

Currently, there is need for laboratory-based high-throughput and reliable point-of-care drug screening methodologies. We demonstrate here a chip-based label-free porous silicon (PSi) photonic sensor for detecting opiates in urine. This technique provides a cost-effective alternative to conventional labeled drug screening immunoassays with potential for translation to multiplexed analysis. Important effects of surface chemistry and competitive binding assay protocol on the sensitivity of opiate detection are revealed. Capability to tune sensitivity and detection range over approximately 3 orders of magnitude (18.0 nM to 10.8 muM) was achieved by varying the applied urine specimen volume (100-5 muL), which results in systematic shifts in the competitive binding response curve. A detection range (0.36-4.02 muM) of morphine in urine (15 muL) was designed to span the current positive cutoff value (1.05 muM morphine) in medical opiate urine screening. Desirable high cross-reactivity to oxycodone, in addition to other common opiates, morphine, morphine-3-glucuronide, 6-acetyl morphine, demonstrates an advantage over current commercial screening assays, while low interference with cocaine metabolite was maintained. This study uniquely displays PSi sensor technology as an inexpensive, rapid, and reliable drug screening technology. Furthermore, the versatile surface chemistry developed can be implemented on a range of solid-supported sensors to conduct competitive inhibition assays.

Position-sensitive X-ray detectors

International Nuclear Information System (INIS)

Hendrix, J.

1982-01-01

An overview is given of the different types of position-sensitive X-ray detectors used in kinetic studies of biological molecule state changes using X-ray diffraction with synchrotron radiation as a probe. The detector requirements and principles of operation of proportional counters are outlined. Multiwire proportional chamber systems and their readout techniques are described. Other detectors discussed include a drift chamber type detector, microchannel plates, charge-couple devices and, for high count rates, an integrating TV-detector. (U.K.)

A TWO-DIMENSIONAL POSITION SENSITIVE SI(LI) DETECTOR

Energy Technology Data Exchange (ETDEWEB)

Walton, Jack T.; Hubbard, G. Scott; Haller, Eugene E.; Sommer, Heinrich A.

1978-11-01

Circular, large-area two-dimensional Si(Li) position sensitive detectors have been fabricated. The detectors employ a thin lithium-diffused n{sup +} resistive layer for one contact and a boron implanted p{sup +} resistive layer for the second contact. A position resolution of the order of 100 {micro}m is indicated.

Construction process and read-out electronics of amorphous silicon position detectors for multipoint alignment monitoring

Energy Technology Data Exchange (ETDEWEB)

Koehler, C.; Schubert, M.B.; Lutz, B.; Werner, J.H. [Steinbeis-Transferzentrum fuer Angewandte Photovoltaik und Duennschichttechnik, Stuttgart (Germany); Alberdi, J.; Arce, P.; Barcala, J.M.; Calvo, E. [CIEMAT, Madrid (Spain); Ferrando, A. [CIEMAT, Madrid (Spain)], E-mail: antonio.ferrando@ciemat.es; Josa, M.I.; Molinero, A.; Navarrete, J.; Oller, J.C.; Yuste, C. [CIEMAT, Madrid (Spain); Calderon, A.; Fernandez, M.G.; Gomez, G.; Gonzalez-Sanchez, F.J.; Martinez-Rivero, C.; Matorras, F. [Instituto de Fisica de Cantabria IFCA/CSIC-University of Cantabria, Santander (Spain)] (and others)

2009-09-01

We describe the construction process of large-area high-performance transparent amorphous silicon position detecting sensors. Details about the characteristics of the associated local electronic board (LEB), specially designed for these sensors, are given. In addition we report on the performance of a multipoint alignment monitoring application of 12 sensors in a 13 m long light path.

A position sensitive parallel plate avalanche counter

International Nuclear Information System (INIS)

Lombardi, M.; Tan Jilian; Potenza, R.; D'amico, V.

1986-01-01

A position sensitive parallel plate avalanche counter with a distributed constant delay-line-cathode (PSAC) is described. The strips formed on the printed board were served as the cathode and the delay line for readout of signals. The detector (PSAC) was operated in isobutane gas at the pressure range from 10 to 20 torr. The position resolution is better than 1 mm and the time resolution is about 350 ps, for 252 Cf fission-spectrum source

A highly sensitive and durable electrical sensor for liquid ethanol using thermally-oxidized mesoporous silicon

Science.gov (United States)

Harraz, Farid A.; Ismail, Adel A.; Al-Sayari, S. A.; Al-Hajry, A.; Al-Assiri, M. S.

2016-12-01

A capacitive detection of liquid ethanol using reactive, thermally oxidized films constructed from electrochemically synthesized porous silicon (PSi) is demonstrated. The sensor elements are fabricated as meso-PSi (pore sizes hydrophobic PSi surface exhibited almost a half sensitivity of the thermal oxide sensor. The response to water is achieved only at the oxidized surface and found to be ∼one quarter of the ethanol sensitivity, dependent on parameters such as vapor pressure and surface tension. The capacitance response retains ∼92% of its initial value after continuous nine cyclic runs and the sensors presumably keep long-term stability after three weeks storage, demonstrating excellent durability and storage stability. The observed behavior in current system is likely explained by the interface interaction due to dipole moment effect. The results suggest that the current sensor structure and design can be easily made to produce notably higher sensitivities for reversible detection of various analytes.

Facile synthesis of silicon carbide-titanium dioxide semiconducting nanocomposite using pulsed laser ablation technique and its performance in photovoltaic dye sensitized solar cell and photocatalytic water purification

Energy Technology Data Exchange (ETDEWEB)

Gondal, M.A., E-mail: magondal@kfupm.edu.sa [Laser Research Group, Physics Department & Center of Excellence in Nanotechnology, King Fahd University of Petroleum and Minerals, Dhahran 31261 (Saudi Arabia); Ilyas, A.M. [Laser Research Group, Physics Department & Center of Excellence in Nanotechnology, King Fahd University of Petroleum and Minerals, Dhahran 31261 (Saudi Arabia); Baig, Umair [Laser Research Group, Physics Department & Center of Excellence in Nanotechnology, King Fahd University of Petroleum and Minerals, Dhahran 31261 (Saudi Arabia); Center of Excellence for Scientific Research Collaboration with MIT, King Fahd University of Petroleum and Minerals, Dhahran 31261 (Saudi Arabia)

2016-08-15

Highlights: • SiC–TiO{sub 2} semiconducting nanocomposites synthesized by nanosecond PLAL technique. • Synthesized nanocomposites were morphologically and optically characterized. • Nanocomposites were applied for the photocatalytic degradation of toxic organic dye. • Photovoltaic performance was investigated in dye sensitized solar cell. - Abstract: Separation of photo-generated charge carriers (electron and holes) is a major approach to improve the photovoltaic and photocatalytic performance of metal oxide semiconductors. For harsh environment like high temperature applications, ceramic like silicon carbide is very prominent. In this work, 10%, 20% and 40% by weight of pre-oxidized silicon carbide was coupled with titanium dioxide (TiO{sub 2}) to form nanocomposite semiconductor via elegant pulsed laser ablation in liquid technique using second harmonic 532 nm wavelength of neodymium-doped yttrium aluminium garnet (Nd-YAG) laser. In addition, the effect of silicon carbide concentration on the performance of silicon carbide-titanium dioxide nanocomposite as photo-anode in dye sensitized solar cell and as photocatalyst in photodegradation of methyl orange dye in water was also studied. The result obtained shows that photo-conversion efficiency of the dye sensitized solar cell was improved from 0.6% to 1.65% and the percentage of methyl orange dye removed was enhanced from 22% to 77% at 24 min under ultraviolet–visible solar spectrum in the nanocomposite with 10% weight of silicon carbide. This remarkable performance enhancement could be due to the improvement in electron transfer phenomenon by the presence of silicon carbide on titanium dioxide.

Gas position sensitive x-ray detectors

International Nuclear Information System (INIS)

Barbosa, A.F.

1994-12-01

The construction of gas x-ray detectors used to count and localize x-ray photons in one and two dimensions is reported. The principles of operation of the detectors are described, as well as the electronic modules comprised in the data acquisition system. Results obtained with detectors built at CBPF are shown, illustrating the performance of the Linear Position Sensitive Detectors. (author). 6 refs, 14 figs

A broadband-sensitive upconverter La(Ga{sub 0.5}Sc{sub 0.5})O{sub 3}:Er,Ni,Nb for crystalline silicon solar cells

Energy Technology Data Exchange (ETDEWEB)

Takeda, Yasuhiko, E-mail: takeda@mosk.tytlabs.co.jp; Mizuno, Shintaro; Luitel, Hom Nath; Tani, Toshihiko [Toyota Central Research and Development Laboratories, Inc., 41-1 Yokomichi, Nagakute, Aichi 480-1192 (Japan)

2016-01-25

We have developed an upconverter that significantly broadens the sensitive range, to overcome the shortcoming that conventional Er{sup 3+}-doped upconverters used for crystalline silicon solar cells can utilize only a small portion of the solar spectrum at around 1.55 μm. We have designed the combination of the sensitizers and host material to utilize photons not absorbed by silicon or Er{sup 3+} ions. Ni{sup 2+} ions have been selected as the sensitizers that absorb photons in the wavelength range between the silicon absorption edge (1.1 μm) and the Er{sup 3+} absorption band and transfer the energies to the Er{sup 3+} emitters, with La(Ga,Sc)O{sub 3} as the host material. The Ga to Sc ratio has been optimized to tune the location of the Ni{sup 2+} absorption band for sufficient energy transfer. Co-doping with Nb{sup 5+} ions is needed for charge balance to introduce divalent Ni{sup 2+} ions into the trivalent Ga{sup 3+} and Sc{sup 3+} sites. In addition to 1.45–1.58 μm photons directly absorbed by the Er{sup 3+} ions, we have demonstrated upconversion of 1.1–1.35 μm photons in the Ni{sup 2+} absorption band to 0.98 μm photons, using 10% Er, 0.5% Ni, and 0.5% Nb-doped La(Ga{sub 0.5}Sc{sub 0.5})O{sub 3}. The broadband-sensitive upconverter developed here can improve conversion efficiency of crystalline silicon solar cells more notably than conventional ones.

Charge Collection Efficiency Simulations of Irradiated Silicon Strip Detectors

CERN Document Server

Peltola, T.

2014-01-01

During the scheduled high luminosity upgrade of LHC, the world's largest particle physics accelerator at CERN, the position sensitive silicon detectors installed in the vertex and tracking part of the CMS experiment will face more intense radiation environment than the present system was designed for. Thus, to upgrade the tracker to required performance level, comprehensive measurements and simulations studies have already been carried out. Essential information of the performance of an irradiated silicon detector is obtained by monitoring its charge collection efficiency (CCE). From the evolution of CCE with fluence, it is possible to directly observe the effect of the radiation induced defects to the ability of the detector to collect charge carriers generated by traversing minimum ionizing particles (mip). In this paper the numerically simulated CCE and CCE loss between the strips of irradiated silicon strip detectors are presented. The simulations based on Synopsys Sentaurus TCAD framework were performed ...

Tuning Light Emission of a Pressure-Sensitive Silicon/ZnO Nanowires Heterostructure Matrix through Piezo-phototronic Effects.

Science.gov (United States)

Chen, Mengxiao; Pan, Caofeng; Zhang, Taiping; Li, Xiaoyi; Liang, Renrong; Wang, Zhong Lin

2016-06-28

Based on white light emission at silicon (Si)/ZnO hetrerojunction, a pressure-sensitive Si/ZnO nanowires heterostructure matrix light emitting diode (LED) array is developed. The light emission intensity of a single heterostructure LED is tuned by external strain: when the applied stress keeps increasing, the emission intensity first increases and then decreases with a maximum value at a compressive strain of 0.15-0.2%. This result is attributed to the piezo-phototronic effect, which can efficiently modulate the LED emission intensity by utilizing the strain-induced piezo-polarization charges. It could tune the energy band diagrams at the junction area and regulate the optoelectronic processes such as charge carriers generation, separation, recombination, and transport. This study achieves tuning silicon based devices through piezo-phototronic effect.

Two-dimensional position sensitive neutron detector

Indian Academy of Sciences (India)

The detector is a 3He + Kr filled multiwire proportional counter with charge division position readout and has a sensitive area of 345 mm × 345 mm, pixel size 5 mm × 5 mm, active depth 25 mm and is designed for efficiency of 70% for 4 Å neutrons. The detector is tested with 0.5 bar 3He + 1.5 bar krypton gas mixture in active ...

First Measurements of the Performance of New Semitransparent Amorphous Silicon Sensor Prototypes

International Nuclear Information System (INIS)

Calderon, A.; Calvo, E.; Martinez-Rivero, C.; Matorras, F.; Rodrigo, T.; Sobron, M.; Vila, I.; Virto, A. L.; Alberdi, J.; Arce, P.; Barcala, J. M.; Ferrando, A.; Josa, M. I.; Luque, J. M.; Molinero, A.; Navarrete, J.; Oller, J. C.; Yuste, C.

2004-01-01

We present first results on the performance of a new generation of semitransparent amorphous silicon position detectors having good properties such as an intrinsic position resolution better than 5μm, an spatial point reconstruction precision better than 10 μm, deflection angles smaller than 10μrad and transmission in the visible and NIR higher than 70%. In addition the sensitive area is very large: 30x30 cm 3 . (Author) 10 refs

High-Sensitivity Temperature-Independent Silicon Photonic Microfluidic Biosensors

Science.gov (United States)

Kim, Kangbaek

Optical biosensors that can precisely quantify the presence of specific molecular species in real time without the need for labeling have seen increased use in the drug discovery industry and molecular biology in general. Of the many possible optical biosensors, the TM mode Si biosensor is shown to be very attractive in the sensing application because of large field amplitude on the surface and cost effective CMOS VLSI fabrication. Noise is the most fundamental factor that limits the performance of sensors in development of high-sensitivity biosensors, and noise reduction techniques require precise studies and analysis. One such example stems from thermal fluctuations. Generally SOI biosensors are vulnerable to ambient temperature fluctuations because of large thermo-optic coefficient of silicon (˜2x10 -4 RIU/K), typically requiring another reference ring and readout sequence to compensate temperature induced noise. To address this problem, we designed sensors with a novel TM-mode shallow-ridge waveguide that provides both large surface amplitude for bulk and surface sensing. With proper design, this also provides large optical confinement in the aqueous cladding that renders the device athermal using the negative thermo-optic coefficient of water (~ --1x10-4RIU/K), demonstrating cancellation of thermo-optic effects for aqueous solution operation near 300K. Additional limitations resulting from mechanical actuator fluctuations, stability of tunable lasers, and large 1/f noise of lasers and sensor electronics can limit biosensor performance. Here we also present a simple harmonic feedback readout technique that obviates the need for spectrometers and tunable lasers. This feedback technique reduces the impact of 1/f noise to enable high-sensitivity, and a DSP lock-in with 256 kHz sampling rate can provide down to micros time scale monitoring for fast transitions in biomolecular concentration with potential for small volume and low cost. In this dissertation, a novel

Hybrid organic/inorganic position-sensitive detectors based on PEDOT:PSS/n-Si

Science.gov (United States)

Javadi, Mohammad; Gholami, Mahdiyeh; Torbatiyan, Hadis; Abdi, Yaser

2018-03-01

Various configurations like p-n junctions, metal-semiconductor Schottky barriers, and metal-oxide-semiconductor structures have been widely used in position-sensitive detectors. In this report, we propose a PEDOT:PSS/n-Si heterojunction as a hybrid organic/inorganic configuration for position-sensitive detectors. The influence of the thickness of the PEDOT:PSS layer, the wavelength of incident light, and the intensity of illumination on the device performance are investigated. The hybrid PSD exhibits very high sensitivity (>100 mV/mm), excellent nonlinearity (0.995) with a response time of heterojunction are very promising for developing a new class of position-sensitive detectors based on the hybrid organic/inorganic junctions.

Evaluation of the x-ray response of a position-sensitive microstrip detector with an integrated readout chip

International Nuclear Information System (INIS)

Rossington, C.; Jaklevic, J.; Haber, C.; Spieler, H.; Reid, J.

1990-08-01

The performance of an SVX silicon microstrip detector and its compatible integrated readout chip have been evaluated in response to Rh Kα x-rays (average energy 20.5 keV). The energy and spatial discrimination capabilities, efficient data management and fast readout rates make it an attractive alternative to the CCD and PDA detectors now being offered for x-ray position sensitive diffraction and EXAFS work. The SVX system was designed for high energy physics applications and thus further development of the existing system is required to optimize it for use in practical x-ray experiments. For optimum energy resolution the system noise must be decreased to its previously demonstrated low levels of 2 keV FWHM at 60 keV or less, and the data handling rate of the computer must be increased. New readout chips are now available that offer the potential of better performance. 15 refs., 7 figs

Position-sensitive gaseous photomultipliers research and applications

CERN Document Server

Francke, Tom; Peskov, Vladimir

2016-01-01

Gaseous photomultipliers are defined as gas-filled devices capable of recording single ultraviolet (UV) and visible photons with high position resolution. Used in a variety of research areas, these detectors can be paired with computers to treat and store imaging information of UV-light. Position-Sensitive Gaseous Photomultipliers: Research and Applications explores the advancement of gaseous detectors as applied for single photon detection. Emphasizing emerging perspectives and new ways to apply gaseous detectors across research fields, this research-based publication is an essential reference source for engineers, physicists, graduate-level students, and researchers.

The measurement of the radioactive aerosol diameter by position sensitive detectors, 3

International Nuclear Information System (INIS)

Murakami, Hiroyuki; Nakamoto, Atsushi; Kanamori, Masashi; Seki, Akio.

1981-10-01

The measurement of the diameter of radioactive aerosol, in particular plutonium aerosol, is very important for the internal dose estimation. Determination of the diameter of radioactive aerosol is performed by using the position sensitive detectors. Position sensitive semiconductor detectors and Scintillation detectors with IIT tube are used as the position sensitive detector. The filter paper with the radioactive aerosols is contacted to the PSD which is connected to the data processor so that the diameter of the aerosol is calculated from the measured radioactivity. (author)

Silicon on-chip bandpass filters for the multiplexing of high sensitivity photonic crystal microcavity biosensors

International Nuclear Information System (INIS)

Yan, Hai; Zou, Yi; Yang, Chun-Ju; Chakravarty, Swapnajit; Wang, Zheng; Tang, Naimei; Chen, Ray T.; Fan, Donglei

2015-01-01

A method for the dense integration of high sensitivity photonic crystal (PC) waveguide based biosensors is proposed and experimentally demonstrated on a silicon platform. By connecting an additional PC waveguide filter to a PC microcavity sensor in series, a transmission passband is created, containing the resonances of the PC microcavity for sensing purpose. With proper engineering of the passband, multiple high sensitivity PC microcavity sensors can be integrated into microarrays and be interrogated simultaneously between a single input and a single output port. The concept was demonstrated with a 2-channel L55 PC biosensor array containing PC waveguide filters. The experiment showed that the sensors on both channels can be monitored simultaneously from a single output spectrum. Less than 3 dB extra loss for the additional PC waveguide filter is observed

Silicon on-chip bandpass filters for the multiplexing of high sensitivity photonic crystal microcavity biosensors

Energy Technology Data Exchange (ETDEWEB)

Yan, Hai, E-mail: hai.yan@utexas.edu; Zou, Yi; Yang, Chun-Ju [Department of Electrical and Computer Engineering, Microelectronics Research Center, The University of Texas at Austin, 10100 Burnet Rd., Austin, Texas 78758 (United States); Chakravarty, Swapnajit, E-mail: swapnajit.chakravarty@omegaoptics.com [Omega Optics, Inc., 8500 Shoal Creek Blvd., Austin, Texas 78757 (United States); Wang, Zheng [Department of Electrical and Computer Engineering, Microelectronics Research Center, The University of Texas at Austin, 10100 Burnet Rd., Austin, Texas 78758 (United States); Materials Science and Engineering Program, Texas Materials Institute, The University of Texas at Austin, Austin, Texas 78712 (United States); Tang, Naimei; Chen, Ray T., E-mail: raychen@uts.cc.utexas.edu [Department of Electrical and Computer Engineering, Microelectronics Research Center, The University of Texas at Austin, 10100 Burnet Rd., Austin, Texas 78758 (United States); Omega Optics, Inc., 8500 Shoal Creek Blvd., Austin, Texas 78757 (United States); Fan, Donglei [Materials Science and Engineering Program, Texas Materials Institute, The University of Texas at Austin, Austin, Texas 78712 (United States); Department of Mechanical Engineering, The University of Texas at Austin, Austin, Texas 78712 (United States)

2015-03-23

A method for the dense integration of high sensitivity photonic crystal (PC) waveguide based biosensors is proposed and experimentally demonstrated on a silicon platform. By connecting an additional PC waveguide filter to a PC microcavity sensor in series, a transmission passband is created, containing the resonances of the PC microcavity for sensing purpose. With proper engineering of the passband, multiple high sensitivity PC microcavity sensors can be integrated into microarrays and be interrogated simultaneously between a single input and a single output port. The concept was demonstrated with a 2-channel L55 PC biosensor array containing PC waveguide filters. The experiment showed that the sensors on both channels can be monitored simultaneously from a single output spectrum. Less than 3 dB extra loss for the additional PC waveguide filter is observed.

Silicon integrated circuit process

International Nuclear Information System (INIS)

Lee, Jong Duck

1985-12-01

This book introduces the process of silicon integrated circuit. It is composed of seven parts, which are oxidation process, diffusion process, ion implantation process such as ion implantation equipment, damage, annealing and influence on manufacture of integrated circuit and device, chemical vapor deposition process like silicon Epitaxy LPCVD and PECVD, photolithography process, including a sensitizer, spin, harden bake, reflection of light and problems related process, infrared light bake, wet-etch, dry etch, special etch and problems of etching, metal process like metal process like metal-silicon connection, aluminum process, credibility of aluminum and test process.

Silicon integrated circuit process

Energy Technology Data Exchange (ETDEWEB)

Lee, Jong Duck

1985-12-15

This book introduces the process of silicon integrated circuit. It is composed of seven parts, which are oxidation process, diffusion process, ion implantation process such as ion implantation equipment, damage, annealing and influence on manufacture of integrated circuit and device, chemical vapor deposition process like silicon Epitaxy LPCVD and PECVD, photolithography process, including a sensitizer, spin, harden bake, reflection of light and problems related process, infrared light bake, wet-etch, dry etch, special etch and problems of etching, metal process like metal process like metal-silicon connection, aluminum process, credibility of aluminum and test process.

Silicon micromachined vibrating gyroscopes

Science.gov (United States)

Voss, Ralf

1997-09-01

This work gives an overview of silicon micromachined vibrating gyroscopes. Market perspectives and fields of application are pointed out. The advantage of using silicon micromachining is discussed and estimations of the desired performance, especially for automobiles are given. The general principle of vibrating gyroscopes is explained. Vibrating silicon gyroscopes can be divided into seven classes. for each class the characteristic principle is presented and examples are given. Finally a specific sensor, based on a tuning fork for automotive applications with a sensitivity of 250(mu) V/degrees is described in detail.

Prototype of high resolution PET using resistive electrode position sensitive CdTe detectors

International Nuclear Information System (INIS)

Kikuchi, Yohei; Ishii, Keizo; Matsuyama, Shigeo; Yamazaki, Hiromichi

2008-01-01

Downsizing detector elements makes it possible that spatial resolutions of positron emission tomography (PET) cameras are improved very much. From this point of view, semiconductor detectors are preferable. To obtain high resolution, the pixel type or the multi strip type of semiconductor detectors can be used. However, in this case, there is a low packing ratio problem, because a dead area between detector arrays cannot be neglected. Here, we propose the use of position sensitive semiconductor detectors with resistive electrode. The CdTe detector is promising as a detector for PET camera because of its high sensitivity. In this paper, we report development of prototype of high resolution PET using resistive electrode position sensitive CdTe detectors. We made 1-dimensional position sensitive CdTe detectors experimentally by changing the electrode thickness. We obtained 750 A as an appropriate thickness of position sensitive detectors, and evaluated the performance of the detector using a collimated 241 Am source. A good position resolution of 1.2 mm full width half maximum (FWHM) was obtained. On the basis of the fundamental development of resistive electrode position sensitive detectors, we constructed a prototype of high resolution PET which was a dual head type and was consisted of thirty-two 1-dimensional position sensitive detectors. In conclusion, we obtained high resolutions which are 0.75 mm (FWHM) in transaxial, and 1.5 mm (FWHM) in axial. (author)

First Measurements of the Performance of New Semitransparent Amorphous Silicon Sensor Prototypes

Energy Technology Data Exchange (ETDEWEB)

Calderon, A.; Calvo, E.; Martinez-Rivero, C.; Matorras, F.; Rodrigo, T.; Sobron, M.; Vila, I.; Virto, A. L.; Alberdi, J.; Arce, P.; Barcala, J. M.; Ferrando, A.; Josa, M. I.; Luque, J. M.; Molinero, A.; Navarrete, J.; Oller, J. C.; Yuste, C.

2004-07-01

We present first results on the performance of a new generation of semitransparent amorphous silicon position detectors having good properties such as an intrinsic position resolution better than 5{mu}m, an spatial point reconstruction precision better than 10 {mu}m, deflection angles smaller than 10{mu}rad and transmission in the visible and NIR higher than 70%. In addition the sensitive area is very large: 30x30 cm''3. (Author) 10 refs.

Sensitivity of GRETINA position resolution to hole mobility

Energy Technology Data Exchange (ETDEWEB)

Prasher, V.S. [Department of Physics, University of Massachusetts Lowell, Lowell, MA 01854 (United States); Cromaz, M. [Nuclear Science Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720 (United States); Merchan, E.; Chowdhury, P. [Department of Physics, University of Massachusetts Lowell, Lowell, MA 01854 (United States); Crawford, H.L. [Nuclear Science Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720 (United States); Lister, C.J. [Department of Physics, University of Massachusetts Lowell, Lowell, MA 01854 (United States); Campbell, C.M.; Lee, I.Y.; Macchiavelli, A.O. [Nuclear Science Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720 (United States); Radford, D.C. [Physics Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831 (United States); Wiens, A. [Nuclear Science Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720 (United States)

2017-02-21

The sensitivity of the position resolution of the gamma-ray tracking array GRETINA to the hole charge-carrier mobility parameter is investigated. The χ{sup 2} results from a fit of averaged signal (“superpulse”) data exhibit a shallow minimum for hole mobilities 15% lower than the currently adopted values. Calibration data on position resolution is analyzed, together with simulations that isolate the hole mobility dependence of signal decomposition from other effects such as electronics cross-talk. The results effectively exclude hole mobility as a dominant parameter for improving the position resolution for reconstruction of gamma-ray interaction points in GRETINA.

The silicon sensors for the Inner Tracker of the Compact Muon Solenoid Experiment

International Nuclear Information System (INIS)

Krammer, M.

2003-01-01

Full text: The Inner Tracker of the Compact Muon Solenoid Experiment, at present under construction, will consist of more than 24000 silicon strip sensors arranged in 10 central concentric layers and 2 X 9 discs at both ends. The total sensitive silicon area will exceed 200 m 2 . The silicon sensors are produced in various thicknesses and geometries. Each sensor has 512 or 768 implanted strips which will allow to measure the position of traversing high energy charged particles. This paper a short overview of the CMS tracker system. Subsequently the design of the silicon sensors is explained with special emphasis on the radiation hardness and on the high voltage stability of the sensors. Two companies share the production of these sensors. The quality of the sensors is extensively checked by several laboratories associated with CMS. Important electrical parameters are measured on the sensors themselves. In addition, dedicated test structures were designed by CMS which allow the monitoring of many parameters sensitive to the production process. By May 2003 about 3000 sensors were delivered and a large fraction of these sensors and tests structures was measured. A summary of these measurements will be given and the main results will be discussed

Position-sensitive transition-edge sensors

International Nuclear Information System (INIS)

Iyomoto, N.; Bandler, S.R.; Brekosky, R.P.; Chervenak, J.A.; Figueroa-Feliciano, E.; Finkbeiner, F.M.; Kelley, R.L.; Kilbourne, C.A.; Lindeman, M.A.; Murphy, K.; Porter, F.S.; Saab, T.; Sadleir, J.E.; Talley, D.J.

2006-01-01

We report the latest results from our development of Position-Sensitive Transition-edge sensors (PoSTs), which are one-dimensional imaging spectrometers. In PoSTs with segmented Au absorbers, we obtained 8eV energy resolution on K Kα lines, which is consistent to the baseline energy resolution and the design values, on all of the nine pixels, by choosing the best combination of the thermal conductance in absorbers and in links that connects the absorbers. The pulse decay time of 193μs is fast enough for our purpose. In a PoST with a continuous Bi/Cu absorber, by dividing the events into 63 effective pixels, we obtained energy resolutions of 16eV at the center 'pixel', which is comparable to the baseline energy resolution, and 33eV at the outer 'pixel'. The degradation of the energy resolution in the outer 'pixel' is due to position dependence, which we can cancel out by dividing the events into smaller 'pixels' when we have sufficient X-ray events

Hole Injection at the Silicon/Aqueous Electrolyte Interface: A Possible Mechanism for Chemiluminescence from Porous Silicon

NARCIS (Netherlands)

Kooij, Ernst S.; Butter, K.; Kelly, J.J.

1998-01-01

The reduction mechanism of oxidizing agents at silicon and porous silicon electrodes has been investigated in relation to light emission from the porous semiconductor. Oxidizing agents with a positive redox potential are shown to inject holes into HF-pretreated silicon. However, as the degree of

A position-sensitive start detector for time-of-flight measurement

International Nuclear Information System (INIS)

Ikezoe, Hiroshi; Shikazono, Naomoto; Isoyama, Goro.

1978-08-01

A position-sensitive start detector for a time-of-flight measurement is described. In this detector microchannel plates were used to obtain time and position signals simultaneously. A time resolution of 121 psec FWHM and a position resolution of 0.28 mm FWHM were obtained for α-particles from an 241 Am source. (auth.)

Development of silicon pad detectors and readout electronics for a Compton camera

CERN Document Server

Studen, A; Clinthorne, N H; Czermak, A; Dulinski, W; Fuster, J A; Han, L; Jalocha, P; Kowal, M; Kragh, T; Lacasta, C; Llosa, G; Meier, D; Mikuz, M; Nygård, E; Park, S J; Roe, S; Rogers, W L; Sowicki, B; Weilhammer, P; Wilderman, S J; Yoshioka, K; Zhang, L

2003-01-01

Applications in nuclear medicine and bio-medical engineering may profit using a Compton camera for imaging distributions of radio-isotope labelled tracers in organs and tissues. These applications require detection of photons using thick position-sensitive silicon sensors with the highest possible energy and good spatial resolution. In this paper, research and development on silicon pad sensors and associated readout electronics for a Compton camera are presented. First results with low-noise, self-triggering VATAGP ASIC's are reported. The measured energy resolution was 1.1 keV FWHM at room temperature for the sup 2 sup 4 sup 1 Am photo-peak at 59.5 keV.

Electronic band-gap modified passive silicon optical modulator at telecommunications wavelengths.

Science.gov (United States)

Zhang, Rui; Yu, Haohai; Zhang, Huaijin; Liu, Xiangdong; Lu, Qingming; Wang, Jiyang

2015-11-13

The silicon optical modulator is considered to be the workhorse of a revolution in communications. In recent years, the capabilities of externally driven active silicon optical modulators have dramatically improved. Self-driven passive modulators, especially passive silicon modulators, possess advantages in compactness, integration, low-cost, etc. Constrained by a large indirect band-gap and sensitivity-related loss, the passive silicon optical modulator is scarce and has been not advancing, especially at telecommunications wavelengths. Here, a passive silicon optical modulator is fabricated by introducing an impurity band in the electronic band-gap, and its nonlinear optics and applications in the telecommunications-wavelength lasers are investigated. The saturable absorption properties at the wavelength of 1.55 μm was measured and indicates that the sample is quite sensitive to light intensity and has negligible absorption loss. With a passive silicon modulator, pulsed lasers were constructed at wavelengths at 1.34 and 1.42 μm. It is concluded that the sensitive self-driven passive silicon optical modulator is a viable candidate for photonics applications out to 2.5 μm.

Sensitivity of triple-crystal X-ray diffractometers to microdefects in silicon

International Nuclear Information System (INIS)

Molodkin, V.B.; Olikhovskii, S.I.; Len, E.G.; Kislovskii, E.N.; Kladko, V.P.; Reshetnyk, O.V.; Vladimirova, T.P.; Sheludchenko, B.V.

2009-01-01

The dynamical theory, which describes both diffraction profiles and reciprocal space maps measured from imperfect crystals with account for instrumental factors of triple-crystal diffractometer (TCD), has been developed for adequate quantitative characterization of microdefects. Analytical expressions for coherent and diffuse scattering (DS) intensities measured by TCD in the Bragg diffraction geometry have been derived by using the generalized statistical dynamical theory of X-ray scattering in real single crystals with randomly distributed defects. The DS intensity distributions from single crystals containing clusters and dislocation loops have been described by explicit analytical expressions. Particularly, these expressions take into account anisotropy of displacement fields around defects with discrete orientations. Characteristics of microdefect structures in silicon single crystals grown by Czochralsky- and float-zone methods have been determined by analyzing the measured TCD profiles and reciprocal space maps. The sensitivities of reciprocal space maps and diffraction profiles to defect characteristics have been compared. (Abstract Copyright [2009], Wiley Periodicals, Inc.)

Silicon photonic thermometer operating on multiple polarizations

DEFF Research Database (Denmark)

Guan, Xiaowei; Wang, Xiaoyan; Frandsen, Lars Hagedorn

2016-01-01

A silicon photonics optical thermometer simultaneously operating on the multiple polarizations is designed and experimentally demonstrated. Measured sensitivities are 86pm/°C and 48pm/°C for the transverse-electric and transverse-magnetic polarizations, respectively.......A silicon photonics optical thermometer simultaneously operating on the multiple polarizations is designed and experimentally demonstrated. Measured sensitivities are 86pm/°C and 48pm/°C for the transverse-electric and transverse-magnetic polarizations, respectively....

A large area two-dimensional position sensitive multiwire proportional detector

CERN Document Server

Moura, M M D; Souza, F A; Alonso, E E; Fujii, R J; Meyknecht, A B; Added, N; Aissaoui, N; Cardenas, W H Z; Ferraretto, M D; Schnitter, U; Szanto, E M; Szanto de Toledo, A; Yamamura, M S; Carlin, N

1999-01-01

Large area two-dimensional position sensitive multiwire proportional detectors were developed to be used in the study of light heavy-ion nuclear reactions at the University of Sao Paulo Pelletron Laboratory. Each detector has a 20x20 cm sup 2 active area and consists of three grids (X-position, anode and Y-position) made of 25 mu m diameter gold plated tungsten wires. The position is determined through resistive divider chains. Results for position resolution, linearity and efficiency as a function of energy and position for different elements are reported.

The design of a position-sensitive thermal-neutron detector

International Nuclear Information System (INIS)

Zhang Yi; Chen Ziyu; Shen Ji

2007-01-01

We design a type of position-sensitive thermal-neutron detector. The design is based on the nuclear reaction 10 B(n, α) 7 Li, and solid boron-10 is used as the target material while the alpha and lithium-7 particles from the reaction are caught as the source of position information of the original neutrons. With the help of MCNP software, we simulate the distribution of alpha particles in the boron target, which leads to the optimal thickness of target, physical efficiency and position resolution. (authors)

Two dimension position sensitive multi-plate PPAC

International Nuclear Information System (INIS)

Mao Ruishi; Guo Zhongyan; Xiao Guoqing; Zhan Wenlong; Xu Hushan; Hu Zhengguo; Wang Meng; Sun Zhiyu; Chen Zhiqiang; Chen Lixin; Li Chen; Bai Jie; Zhang Jinxia; Li Cunfan

2003-01-01

A two-dimensional positional sensitive multi-plate PPAC with resistance chain readout has been developed for Radioactive Ion Beam Line in Lanzhou (RIBLL). The PPAC has an active area of 100 mm x 100 mm. It consists of an anode plane, a x wire plane, a y wire plane and two cathode planes. The gaps between anode and wire planes are 3 mm. And the gaps between cathodes and wire planes also are 3 mm. When filled with iso-butane at a pressure of 6.5 mb, the 0.58 mm (FWHM) position resolution and >99.2% detection efficiencies and <±50 μm linearity of the PPAC was estimated for 3 components α source

Maternal sensitivity and latency to positive emotion following challenge: pathways through effortful control.

Science.gov (United States)

Conway, Anne; McDonough, Susan C; Mackenzie, Michael; Miller, Alison; Dayton, Carolyn; Rosenblum, Katherine; Muzik, Maria; Sameroff, Arnold

2014-01-01

The ability to self-generate positive emotions is an important component of emotion regulation. In this study, we focus on children's latency to express positive emotions following challenging situations and assess whether this ability operates through early maternal sensitivity and children's effortful control. Longitudinal relations between maternal sensitivity, infant negative affect, effortful control, and latency to positive emotion following challenge were examined in 156 children who were 33 months of age. Structural equation models supported the hypothesis that maternal sensitivity during infancy predicted better effortful control and, in turn, shorter latencies to positive emotions following challenge at 33 months. Directions for future research are discussed. © 2014 Michigan Association for Infant Mental Health.

Development of Radiation Hard Radiation Detectors, Differences between Czochralski Silicon and Float Zone Silicon

CERN Document Server

Tuominen, Eija

2012-01-01

The purpose of this work was to develop radiation hard silicon detectors. Radiation detectors made ofsilicon are cost effective and have excellent position resolution. Therefore, they are widely used fortrack finding and particle analysis in large high-energy physics experiments. Silicon detectors willalso be used in the CMS (Compact Muon Solenoid) experiment that is being built at the LHC (LargeHadron Collider) accelerator at CERN (European Organisation for Nuclear Research). This work wasdone in the CMS programme of Helsinki Institute of Physics (HIP).Exposure of the silicon material to particle radiation causes irreversible defects that deteriorate theperformance of the silicon detectors. In HIP CMS Programme, our approach was to improve theradiation hardness of the silicon material with increased oxygen concentration in silicon material. Westudied two different methods: diffusion oxygenation of Float Zone silicon and use of high resistivityCzochralski silicon.We processed, characterised, tested in a parti...

The Strip Silicon Photo-Multiplier: An innovation for enhanced time and position measurement

Energy Technology Data Exchange (ETDEWEB)

Doroud, K., E-mail: Katayoun.Doroud@cern.ch [CERN, Geneva (Switzerland); Williams, M.C.S. [CERN, Geneva (Switzerland); INFN, Bologna (Italy); Yamamoto, K. [Solid State Division, Hamamatsu Photonics K.K., Hamamatsu (Japan)

2017-05-01

There is considerable R&D concerning precise time measurement from a variety of detectors, and in particular for the Silicon PhotoMultiplier (SiPM). In this paper we discuss a new geometry for the SiPM in the form of a strip. A strip can be read out at both end, with each end coupled to an individual TDC (time to digital converter). The time difference is related to the position of the firing SPAD along the length of the strip, while the average of the two times gives the time of the hit. Results from the testing of the first prototype Strip SiPMs are presented in this paper.

Laboratory course on silicon sensors

CERN Document Server

Crescio, E; Roe, S; Rudge, A

2003-01-01

The laboratory course consisted of four different mini sessions, in order to give the student some hands-on experience on various aspects of silicon sensors and related integrated electronics. The four experiments were. 1. Characterisation of silicon diodes for particle detection 2. Study of noise performance of the Viking readout circuit 3. Study of the position resolution of a silicon microstrip sensor 4. Study of charge transport in silicon with a fast amplifier The data in the following were obtained during the ICFA school by the students.

Value of contrast-enhanced MRI of breast after silicone implant

International Nuclear Information System (INIS)

Heinig, A.; Heywang-Koebrunner, S.H.; Viehweg, P.; Spielmann, R.P.; Lampe, D.; Buchmann, J.

1997-01-01

Early recognition of recurrence and work-up of clinically indeterminate lesions may be impaired after reconstruction with silicone implants due to superimposition of the implant or to scarring. This study was undertaken to evaluate the use of contrast-enhanced MRI in patients with silicone implant after breast cancer. Contrast-enhanded MRI was offered to 169 patients. Comparative two- to three-view mammography was also performed in 169 patients, as well as comparative sonography in 144 patients. Conventional imaging and clinical examination detected only 8/13 recurrences, whereas 12/13 were detected by MRI. One recurrence had been visible as a strongly enhancing 2-mm dot in a previous examination (2 years before), but was not called. It was therefore counted as false negative. In addition, multicentricity was detected by MRI alone in two of three cases. MRI correctly diagnosed scar tissue in all cases with indeterminate findings. However, due to false-positive calls caused by enhancing granulomas specificity could not be improved. Contrast-enhanded MRI allowed decisive additional information in our study group and improved the sensitivity significantly (concerning all diagnoses). Contrast-enhanded MRI allowed decisive additional information in our study group and improved the sensitivity significantly (concerning all diagnoses). Contrast-enhanded MRI is recommended in patients with diagnostic problems or high risk of recurrence after silicone implants. (orig.) [de

Beam test results of the irradiated Silicon Drift Detector for ALICE

OpenAIRE

Kushpil, S.; Crescio, E.; Giubellino, P.; Idzik, M.; Kolozhvari, A.; Kushpil, V.; Martinez, M. I.; Mazza, G.; Mazzoni, A.; Meddi, F.; Nouais, D.; Petracek, V.; Piemonte, C.; Rashevsky, A.; Riccati, L.

2005-01-01

The Silicon Drift Detectors will equip two of the six cylindrical layers of high precision position sensitive detectors in the ITS of the ALICE experiment at LHC. In this paper we report the beam test results of a SDD irradiated with 1 GeV electrons. The aim of this test was to verify the radiation tolerance of the device under an electron fluence equivalent to twice particle fluence expected during 10 years of ALICE operation.

A digital divider with extension bits for position-sensitive detectors

International Nuclear Information System (INIS)

Koike, Masaki; Hasegawa, Ken-ichi

1988-01-01

Digitizing errors produced in a digital divider for position-sensitive detectors have been reduced by adding extension bits to data bits. A relation between the extension bits and the data bits to obtain perfect position uniformity is also given. A digital divider employing 10 bit ADCs and 6 bit extension circuits has been constructed. (orig.)

Cylinder gauge measurement using a position sensitive detector

International Nuclear Information System (INIS)

St John, W. Doyle

2007-01-01

A position sensitive detector (PSD) has been used to determine the diameter of cylindrical pins based on the shift in a laser beam's centroid. The centroid of the light beam is defined here as the weighted average of position by the local intensity. A shift can be observed in the centroid of an otherwise axially symmetric light beam, which is partially obstructed. Additionally, the maximum shift in the centroid is a unique function of the obstructing cylinder diameter. Thus to determine the cylinder diameter, one only needs to detect this maximum shift as the cylinder is swept across the beam

Close up of the pick and place tool carrying a dummy silicon sensor.

CERN Multimedia

Bernd Surrow

1999-01-01

The gantry positioning head contains a vacuum pick-up system thatallows several different pick-up tools to be used. This one isdesigned to pick up the silicon sensors. The pick-up tool containsa pressure sensitive contact which can stop the motion of the machine when the tool touches a fixed object. The shiny cylinderis the end of the microscope optics of the CCD camera.

Development of 2D-ACAR apparatus using position-sensitive photomultiplier tubes

Energy Technology Data Exchange (ETDEWEB)

Nagai, Yasuyoshi; Saito, Haruo; Iwata, Tetsuya; Nagashima, Yasuyuki; Hyodo, Toshio [Tokyo Univ. (Japan). Coll. of Arts and Sciences; Uchida, Hiroshi; Omura, Tomohide

1997-03-01

A new two-dimensional angular correlation of annihilation radiation apparatus is described. Position-sensitive photomultiplier tubes coupled with two-dimensional arrays of small BGO scintillator blocks make simple and compact position-sensitive {gamma}-ray detectors. With a sample-detector distance of 5m, an angular resolution of 1.1 mrad FWHM and a coincidence count rate of {approx}2.4 c.p.s. per mCi are obtained. Its performance is demonstrated by the result of a test measurement for KI crystal in which non-localized positronium exists at low temperatures. (author)

Graphene oxide-Ag nanoparticles-pyramidal silicon hybrid system for homogeneous, long-term stable and sensitive SERS activity

Energy Technology Data Exchange (ETDEWEB)

Guo, Jia [School of Physics and Electronics, Shandong Normal University, Jinan 250014 (China); Xu, Shicai [Shandong Provincial Key Laboratory of Biophysics, College of Physics and Electronic Information, Dezhou University, Dezhou 253023 (China); Liu, Xiaoyun; Li, Zhe; Hu, Litao; Li, Zhen; Chen, Peixi; Ma, Yong [School of Physics and Electronics, Shandong Normal University, Jinan 250014 (China); Jiang, Shouzhen, E-mail: jiang_sz@126.com [School of Physics and Electronics, Shandong Normal University, Jinan 250014 (China); Shandong Provincial Key Laboratory of Optics and Photonic Device, Jinan 250014 (China); Ning, Tingyin [School of Physics and Electronics, Shandong Normal University, Jinan 250014 (China); Shandong Provincial Key Laboratory of Optics and Photonic Device, Jinan 250014 (China)

2017-02-28

Highlights: • We directly grown AgNPs on substrate by annealing method in the quartz tube. Compare with spin-coating Ag nanoparticles solution method, we got more uniform distribution of AgNPs and the AgNPs better adsorption on the substrate. • We use a simple and lost-cost method to obtain the pyramidal silicon (PSi). The PSi possessing well-separated pyramid arrays can make contribution to the homogeneity and sensitivity of the substrate. • In our work, graphene oxide (GO) film is uniformly deposited on AgNPs and PSi by using a spin-coating method. The GO films endow the hybrid system a good stability and enhance the homogeneity and sensitivity of the substrate. - Abstract: In our work, few layers graphene oxide (GO) were directly synthesized on Ag nanoparticles (AgNPs) by spin-coating method to fabricate a GO-AgNPs hybrid structure on a pyramidal silicon (PSi) substrate for surface-enhanced Raman scattering (SERS). The GO-AgNPs-PSi substrate showed excellent Raman enhancement effect, the minimum detected concentration for Rhodamine 6G (R6G) can reach 10{sup −12} M, which is one order of magnitude lower than the AgNPs-PSi substrate and two order of magnitude lower than the GO-AgNPs-flat-Si substrate. The linear fit calibration curve with error bars is presented and the value of R{sup 2} of 612 and 773 cm{sup −1} can reach 0.986 and 0.980, respectively. The excellent linear response between the Raman intensity and R6G concentrations prove that the prepared GO-AgNPs-PSi substrates can serve as good SERS substrate for molecule detection. The maximum deviations of SERS intensities from 20 positions of the GO-AgNPs-PSi substrate are less than 8%, revealing the high homogeneity of the SERS substrate. The excellent homogeneity of the enhanced Raman signals can be attributed to well-separated pyramid arrays of PSi, the uniform morphology of AgNPs and multi-functions of GO layer. Besides, the uniform GO film can effectively protect AgNPs from oxidation and endow

Ultra-sensitive and selective detection of mercury ion (Hg2+) using free-standing silicon nanowire sensors

Science.gov (United States)

Jin, Yan; Gao, Anran; Jin, Qinghui; Li, Tie; Wang, Yuelin; Zhao, Jianlong

2018-04-01

In this paper, ultra-sensitive and highly selective Hg2+ detection in aqueous solutions was studied by free-standing silicon nanowire (SiNW) sensors. The all-around surface of SiNW arrays was functionalized with (3-Mercaptopropyl)trimethoxysilane serving as Hg2+ sensitive layer. Due to effective electrostatic control provided by the free-standing structure, a detection limit as low as 1 ppt was obtained. A linear relationship (R 2 = 0.9838) between log(CHg2+ ) and a device current change from 1 ppt to 5 ppm was observed. Furthermore, the developed SiNW sensor exhibited great selectivity for Hg2+ over other heavy metal ions, including Cd2+. Given the extraordinary ability for real-time Hg2+ detection, the small size and low cost of the SiNW device, it is expected to be a potential candidate in field detection of environmentally toxic mercury.

Method and apparatus for formation logging using position sensitive neutron detectors

International Nuclear Information System (INIS)

Gadken, L.L.

1986-01-01

This patent describes a method for logging earth formations using position sensitive neutron detectors. The method consists of: 1) Irradiation of earth formations in the vicinity of a well borehole with a source of fast neutrons. 2) At four longitudinally spaced distances from the neutron source in the borehole, the epithermal neutron population is detected. Each of the four separate populations is detected in an epithermally sensitive and substantially thermally insensitive portion of the same position sensitive neutron detector. A representative signal from each is then individually generated. 3) First, second, third, and fourth neutron population representative signals are combined. They derive a simultaneous measurement signal. This signal is functionally related to the porosity and also a signal functionally related to a neutron characteristic length of the earth formations in the vicinity of the borehole

Current status and requirements for position-sensitive detectors in medicine

CERN Document Server

Speller, R

2002-01-01

This review considers the current status of detector developments for medical imaging using ionising radiation. This field is divided into two major areas; the use of X-rays for transmission imaging and the use of radioactive tracers in emission imaging (nuclear medicine). Until recently, most detector developments were for applications in nuclear medicine. However, in the past 5 years new developments in large area, X-ray-sensitive detectors have meant that both application domains are equally served. In X-ray imaging, work in CT and mammography are chosen as examples of sensor developments. Photodiode arrays in multi-slice spiral CT acquisitions are described and for mammography the use of amorphous silicon flat panel arrays is considered. The latter is an excellent example where new detector developments have required a re-think of traditional imaging methods. In gamma-ray imaging the recent developments in small area, task-specific cameras are described. Their limitations and current proposals to overcome...

Formation of copper precipitates in silicon

Science.gov (United States)

Flink, Christoph; Feick, Henning; McHugo, Scott A.; Mohammed, Amna; Seifert, Winfried; Hieslmair, Henry; Heiser, Thomas; Istratov, Andrei A.; Weber, Eicke R.

1999-12-01

The formation of copper precipitates in silicon was studied after high-temperature intentional contamination of p- and n-type FZ and Cz-grown silicon and quench to room temperature. With the Transient Ion Drift (TID) technique on p-type silicon a critical Fermi level position at EC-0.2 eV was found. Only if the Fermi level position, which is determined by the concentrations of the acceptors and the copper donors, surpasses this critical value precipitation takes place. If the Fermi level is below this level the supersaturated interstitial copper diffuses out. An electrostatic precipitation model is introduced that correlates the observed precipitation behavior with the electrical activity of the copper precipitates as detected with Deep Level Transient Spectroscopy (DLTS) on n-type and with Minority Carrier Transient Spectroscopy (MCTS) on p-type silicon.

Investigation of positive roles of hydrogen plasma treatment for interface passivation based on silicon heterojunction solar cells

International Nuclear Information System (INIS)

Zhang, Liping; Liu, Wenzhu; Liu, Jinning; Shi, Jianhua; Meng, Fanying; Liu, Zhengxin; Guo, Wanwu; Bao, Jian

2016-01-01

The positive roles of H 2 -plasma treatment (HPT) have been investigated by using different treatment procedures in view of the distinctly improved passivation performance of amorphous-crystalline silicon heterojunctions (SHJs). It has been found that a hydrogenated amorphous silicon thin film and crystalline silicon (a-Si:H/c-Si) interface with a high stretching mode (HSM) is detrimental to passivation. A moderate pre-HPT introduces atomic H, which plays an effective tuning role in decreasing the interfacial HSM; unfortunately, an epitaxial layer is formed. Further improvement in passivation can be achieved in terms of increasing the HSM of a-Si:H film treated by appropriate post-HPT based on the a-Si:H thickness. The minority carrier lifetime of crystalline wafers can be improved by treated films containing a certain quantity of crystallites. The microstructure factor R and the maximum intensity of the dielectric function ε 2max have been found to be critical microstructure parameters that describe high-quality a-Si:H passivation layers, which are associated with the amorphous-to-microcrystalline transition phase induced by multi-step HPT. Finally, the open circuit voltage and conversion efficiency of the SHJ solar cell can be improved by implementing an effective HPT process. (paper)

Ultrafast Readout of Scintillating Fibres Using Upgraded Position-Sensitive Photomultipliers

CERN Multimedia

2002-01-01

% RD-17 \\\\ \\\\To design a high rate topological trigger device for the future DIRAC Experiment at CERN an extensive work is in progress on a scintillating-fibre detector using a position-sensitive photomultiplier. Several detector prototypes with different lengths ($<$~50~cm) of sensitive area have been tested at T7S~PS beam. \\\\ \\\\With 0.5~mm diameter fibres a spatial resolution of $\\sim$125~$\\mu$m was obtained with a detection efficiency higher than 95\\%. The time resolution is $\\sim$600~ps, and the track position is properly digitized in real time (about 10~ns) by multi-channel peak sensing circuit. Based on experimental data simulations were also performed a comparison of different types of front-end electronics for multi-channel readout.

Position sensitive photon detectors for nuclear physics, particle physics and healthcare applications

International Nuclear Information System (INIS)

Seitz, B

2012-01-01

Modern experiments in hadronic physics require detector systems capable of identifying and reconstructing all final-state particles and their momentum vectors. Imaging Cherenkov counters (RICH and DIRC) are frequently employed in nuclear and particle physics experiments. These detectors require high-rate, single-photon capable light detection system with sufficient granularity and position resolution. Several candidate systems are available, ranging from multi-anode photomultiplier tubes to micro-channel plate systems to silicon photomultipliers. Each of these detection solutions has particular advantages and disadvantages. Detailed studies of rate dependence, cross-talk, time-resolution and position resolution for a range of available photon detection solutions are presented. These properties make these photon detection systems ideal for radionuclide imaging applications. Cherenkov radiation can also be used for medical imaging applications. Two different applications using the Cherenkov effect for radionuclide imaging will be reviewed.

Study of Charge Diffusion in a Silicon Detector Using an Energy Sensitive Pixel Readout Chip

CERN Document Server

Schioppa, E. J.; van Beuzekom, M.; Visser, J.; Koffeman, E.; Heijne, E.; Engel, K. J.; Uher, J.

2015-01-01

A 300 μm thick thin p-on-n silicon sensor was connected to an energy sensitive pixel readout ASIC and exposed to a beam of highly energetic charged particles. By exploiting the spectral information and the fine segmentation of the detector, we were able to measure the evolution of the transverse profile of the charge carriers cloud in the sensor as a function of the drift distance from the point of generation. The result does not rely on model assumptions or electric field calculations. The data are also used to validate numerical simulations and to predict the detector spectral response to an X-ray fluorescence spectrum for applications in X-ray imaging.

MOS structures containing silicon nanoparticles for memory device applications

International Nuclear Information System (INIS)

Nedev, N; Zlatev, R; Nesheva, D; Manolov, E; Levi, Z; Brueggemann, R; Meier, S

2008-01-01

Metal-oxide-silicon structures containing layers with amorphous or crystalline silicon nanoparticles in a silicon oxide matrix are fabricated by sequential physical vapour deposition of SiO x (x = 1.15) and RF sputtering of SiO 2 on n-type crystalline silicon, followed by high temperature annealing in an inert gas ambient. Depending on the annealing temperature, 700 deg. C or 1000 deg. C, amorphous or crystalline silicon nanoparticles are formed in the silicon oxide matrix. The annealing process is used not only for growing nanoparticles but also to form a dielectric layer with tunnelling thickness at the silicon/insulator interface. High frequency C-V measurements demonstrate that both types of structures can be charged negatively or positively by applying a positive or negative voltage on the gate. The structures with amorphous silicon nanoparticles show several important advantages compared to the nanocrystal ones, such as lower defect density at the interface between the crystalline silicon wafer and the tunnel silicon oxide, better retention characteristics and better reliability

Recent developments and applications of fast position-sensitive gas detectors

International Nuclear Information System (INIS)

Sauli, Fabio

1999-01-01

The introduction, 30 years ago, of the multiwire proportional chamber initiated a very active and fruitful period of development of fast gas detectors. Performing position-sensitive devices have been perfected, for the needs of elementary particle physics and for applications in medical diagnostics, biology, material analysis. The high rate performance of wire counters, limited by positive ions accumulation, was largely improved with the introduction of the micro-strip gas chamber, capable of achieving position accuracies of few tens of microns at radiation fluxes exceeding 1 MHz/mm 2 . The micro-strip chamber properties have been extensively studied in view of large scale use in high luminosity experiments; some interesting applications in other fields will be described here. Originally conceived as a gain booster to solve reliability problems met with micro-strips, the gas electron multiplier was invented about a year and a half ago. Progress made with high gain models is leading to a new concept in gas detectors, powerful yet cheap and reliable. Possible developments and applications will be discussed: large area position-sensitive photo detectors and X-ray imagers, including devices with non-planar geometry suited to spectrometers and crystal diffraction studies

An X-ray gas position sensitive detector: construction and characterization

International Nuclear Information System (INIS)

Barbosa, A.F.; Gabriel, A.; Gabriel, A.; Craievich, A.

1988-01-01

A linear x-ray gas position sensitive detector with delay line readout has been constructed. The detector is described, characterized and used for detecting x-ray diffraction patterns from polycrystals. (author) [pt

Biofunctionalization on Alkylated Silicon Substrate Surfaces via “Click” Chemistry

OpenAIRE

Qin, Guoting; Santos, Catherine; Zhang, Wen; Li, Yan; Kumar, Amit; Erasquin, Uriel J.; Liu, Kai; Muradov, Pavel; Trautner, Barbara Wells; Cai, Chengzhi

2010-01-01

Biofunctionalization of silicon substrates is important to the development of silicon-based biosensors and devices. Compared to conventional organosiloxane films on silicon oxide intermediate layers, organic monolayers directly bound to the non-oxidized silicon substrates via Si-C bonds enhance the sensitivity of detection and the stability against hydrolytic cleavage. Such monolayers presenting a high density of terminal alkynyl groups for bioconjugation via copper-catalyzed azide-alkyne 1,3...

Amorphous silicon ionizing particle detectors

Science.gov (United States)

Street, Robert A.; Mendez, Victor P.; Kaplan, Selig N.

1988-01-01

Amorphous silicon ionizing particle detectors having a hydrogenated amorphous silicon (a--Si:H) thin film deposited via plasma assisted chemical vapor deposition techniques are utilized to detect the presence, position and counting of high energy ionizing particles, such as electrons, x-rays, alpha particles, beta particles and gamma radiation.

Antihydrogen annihilation reconstruction with the ALPHA silicon detector

Energy Technology Data Exchange (ETDEWEB)

Andresen, G.B. [Department of Physics and Astronomy, Aarhus University, DK-8000 Aarhus C (Denmark); Ashkezari, M.D. [Department of Physics, Simon Fraser University, Burnaby, BC, Canada V5A 1S6 (Canada); Bertsche, W. [Department of Physics, Swansea University, Swansea SA2 8PP (United Kingdom); Bowe, P.D. [Department of Physics and Astronomy, Aarhus University, DK-8000 Aarhus C (Denmark); Butler, E. [European Laboratory for Particle Physics, CERN, CH-1211 Geneva 23 (Switzerland); Cesar, C.L. [Instituto de Fisica, Universidade Federal do Rio de Janeiro, Rio de Janeiro 21941-972 (Brazil); Chapman, S. [Department of Physics, University of California, Berkeley, CA 94720-7300 (United States); Charlton, M.; Deller, A.; Eriksson, S. [Department of Physics, Swansea University, Swansea SA2 8PP (United Kingdom); Fajans, J. [Department of Physics, University of California, Berkeley, CA 94720-7300 (United States); Friesen, T. [Department of Physics and Astronomy, University of Calgary, Calgary, AB, Canada T2N 1N4 (Canada); Fujiwara, M.C. [TRIUMF, 4004 Wesbrook Mall, Vancouver, BC, Canada V6T 2A3 (Canada); Department of Physics and Astronomy, University of Calgary, Calgary, AB, Canada T2N 1N4 (Canada); Gill, D.R. [TRIUMF, 4004 Wesbrook Mall, Vancouver, BC, Canada V6T 2A3 (Canada); Gutierrez, A. [Department of Physics and Astronomy, University of British Columbia, Vancouver, BC, Canada V6T 1Z4 (Canada); Hangst, J.S. [Department of Physics and Astronomy, Aarhus University, DK-8000 Aarhus C (Denmark); Hardy, W.N. [Department of Physics and Astronomy, University of British Columbia, Vancouver, BC, Canada V6T 1Z4 (Canada); Hayden, M.E. [Department of Physics, Simon Fraser University, Burnaby, BC, Canada V5A 1S6 (Canada); Hayano, R.S. [Department of Physics, University of Tokyo, Tokyo 113-0033 (Japan); Humphries, A.J. [Department of Physics, Swansea University, Swansea SA2 8PP (United Kingdom); and others

2012-08-21

The ALPHA experiment has succeeded in trapping antihydrogen, a major milestone on the road to spectroscopic comparisons of antihydrogen with hydrogen. An annihilation vertex detector, which determines the time and position of antiproton annihilations, has been central to this achievement. This detector, an array of double-sided silicon microstrip detector modules arranged in three concentric cylindrical tiers, is sensitive to the passage of charged particles resulting from antiproton annihilation. This article describes the method used to reconstruct the annihilation location and to distinguish the annihilation signal from the cosmic ray background. Recent experimental results using this detector are outlined.

Antihydrogen annihilation reconstruction with the ALPHA silicon detector

CERN Document Server

Andresen, G B; Bertsche, W; Bowe, P D; Butler, E; Cesar, C L; Chapman, S; Charlton, M; Deller, A; Eriksson, S; Fajans, J; Friesen, T; Fujiwara, M C; Gill, D.R; Gutierrez, A; Hangst, J S; Hardy, W N; Hayden, M E; Hayano, R S; Humphries, A J; Hydomako, R; Jonsell, S; Jorgensen, L V; Kurchaninov, L; Madsen, N; Menary, S; Nolan, P; Olchanski, K; Olin, A; Povilus, A; Pusa, P; Sarid, E; Seif el Nasr, S; Silveira, D M; So, C; Storey, J W; Thompson, R I; van der Werf, D P; Yamazaki, Y

2012-01-01

The ALPHA experiment has succeeded in trapping antihydrogen, a major milestone on the road to spectroscopic comparisons of antihydrogen with hydrogen. An annihilation vertex detector, which determines the time and position of antiproton annihilations, has been central to this achievement. This detector, an array of double-sided silicon microstrip detector modules arranged in three concentric cylindrical tiers, is sensitive to the passage of charged particles resulting from antiproton annihilation. This article describes the method used to reconstruct the annihilation location and to distinguish the annihilation signal from the cosmic ray background. Recent experimental results using this detector are outlined.

Position sensitivity of the first SmartPET HPGe detector

Energy Technology Data Exchange (ETDEWEB)

Cooper, R.J. [Department of Physics, University of Liverpool, Liverpool (United Kingdom)]. E-mail: rjc@ns.ph.liv.ac.uk; Turk, G. [Department of Physics, University of Liverpool, Liverpool (United Kingdom); Boston, A.J. [Department of Physics, University of Liverpool, Liverpool (United Kingdom); Boston, H.C. [Department of Physics, University of Liverpool, Liverpool (United Kingdom); Cresswell, J.R. [Department of Physics, University of Liverpool, Liverpool (United Kingdom); Mather, A.R. [Department of Physics, University of Liverpool, Liverpool (United Kingdom); Nolan, P.J. [Department of Physics, University of Liverpool, Liverpool (United Kingdom); Hall, C.J. [CCLRC Daresbury, Warrington, Cheshire (United Kingdom); Lazarus, I. [CCLRC Daresbury, Warrington, Cheshire (United Kingdom); Simpson, J. [CCLRC Daresbury, Warrington, Cheshire (United Kingdom); Berry, A. [School of Physics and materials Engineering, Monash University, Melbourne (Australia); Beveridge, T. [School of Physics and materials Engineering, Monash University, Melbourne (Australia); Gillam, J. [School of Physics and materials Engineering, Monash University, Melbourne (Australia); Lewis, R.A. [School of Physics and materials Engineering, Monash University, Melbourne (Australia)

2007-04-01

In this paper we discuss the Smart Positron Emission Tomography (PET) imaging system being developed by University of Liverpool in conjunction with CCLRC Daresbury Laboratory. We describe the motivation for the development of a semiconductor-based PET system and the advantages it will offer over current tomographs. Details of the detectors and associated electronics are discussed and results of high precision scans are presented. Analysis of this scan data has facilitated full characterization of the detector response function and calibration of the three-dimensional position sensitivity. This work presents the analysis of the depth sensitivity of the detector.

Vantage Sensitivity: Environmental Sensitivity to Positive Experiences as a Function of Genetic Differences.

Science.gov (United States)

Pluess, Michael

2017-02-01

A large number of gene-environment interaction studies provide evidence that some people are more likely to be negatively affected by adverse experiences as a function of specific genetic variants. However, such "risk" variants are surprisingly frequent in the population. Evolutionary analysis suggests that genetic variants associated with increased risk for maladaptive development under adverse environmental conditions are maintained in the population because they are also associated with advantages in response to different contextual conditions. These advantages may include (a) coexisting genetic resilience pertaining to other adverse influences, (b) a general genetic susceptibility to both low and high environmental quality, and (c) a coexisting propensity to benefit disproportionately from positive and supportive exposures, as reflected in the recent framework of vantage sensitivity. After introducing the basic properties of vantage sensitivity and highlighting conceptual similarities and differences with diathesis-stress and differential susceptibility patterns of gene-environment interaction, selected and recent empirical evidence for the notion of vantage sensitivity as a function of genetic differences is reviewed. The unique contribution that the new perspective of vantage sensitivity may make to our understanding of social inequality will be discussed after suggesting neurocognitive and molecular mechanisms hypothesized to underlie the propensity to benefit disproportionately from benevolent experiences. © 2015 Wiley Periodicals, Inc.

Silicon-micromachined microchannel plates

CERN Document Server

Beetz, C P; Steinbeck, J; Lemieux, B; Winn, D R

2000-01-01

Microchannel plates (MCP) fabricated from standard silicon wafer substrates using a novel silicon micromachining process, together with standard silicon photolithographic process steps, are described. The resulting SiMCP microchannels have dimensions of approx 0.5 to approx 25 mu m, with aspect ratios up to 300, and have the dimensional precision and absence of interstitial defects characteristic of photolithographic processing, compatible with positional matching to silicon electronics readouts. The open channel areal fraction and detection efficiency may exceed 90% on plates up to 300 mm in diameter. The resulting silicon substrates can be converted entirely to amorphous quartz (qMCP). The strip resistance and secondary emission are developed by controlled depositions of thin films, at temperatures up to 1200 deg. C, also compatible with high-temperature brazing, and can be essentially hydrogen, water and radionuclide-free. Novel secondary emitters and cesiated photocathodes can be high-temperature deposite...

A Method to Simulate the Observed Surface Properties of Proton Irradiated Silicon Strip Sensors

CERN Document Server

INSPIRE-00335524; Bhardwaj, A.; Dalal, R.; Eber, R.; Eichhorn, T.; Lalwani, K.; Messineo, A.; Printz, M.; Ranjan, K.

2015-04-23

During the scheduled high luminosity upgrade of LHC, the world's largest particle physics accelerator at CERN, the position sensitive silicon detectors installed in the vertex and tracking part of the CMS experiment will face more intense radiation environment than the present system was designed for. To upgrade the tracker to required performance level, extensive measurements and simulations studies have already been carried out. A defect model of Synopsys Sentaurus TCAD simulation package for the bulk properties of proton irradiated devices has been producing simulations closely matching with measurements of silicon strip detectors. However, the model does not provide expected behavior due to the fluence increased surface damage. The solution requires an approach that does not affect the accurate bulk properties produced by the proton model, but only adds to it the required radiation induced properties close to the surface. These include the observed position dependency of the strip detector's charge collec...

Silicon Sheet Quality is Improved By Meniscus Control

Science.gov (United States)

Yates, D. A.; Hatch, A. E.; Goldsmith, J. M.

1983-01-01

Better quality silicon crystals for solar cells are possible with instrument that monitors position of meniscus as sheet of solid silicon is drawn from melt. Using information on meniscus height, instrument generates feedback signal to control melt temperature. Automatic control ensures more uniform silicon sheets.

Tailoring the optical constants in single-crystal silicon with embedded silver nanostructures for advanced silicon photonics applications

International Nuclear Information System (INIS)

Akhter, Perveen; Huang, Mengbing; Spratt, William; Kadakia, Nirag; Amir, Faisal

2015-01-01

Plasmonic effects associated with metal nanostructures are expected to hold the key to tailoring light emission/propagation and harvesting solar energy in materials including single crystal silicon which remains the backbone in the microelectronics and photovoltaics industries but unfortunately, lacks many functionalities needed for construction of advanced photonic and optoelectronics devices. Currently, silicon plasmonic structures are practically possible only in the configuration with metal nanoparticles or thin film arrays on a silicon surface. This does not enable one to exploit the full potential of plasmonics for optical engineering in silicon, because the plasmonic effects are dominant over a length of ∼50 nm, and the active device region typically lies below the surface much beyond this range. Here, we report on a novel method for the formation of silver nanoparticles embedded within a silicon crystal through metal gettering from a silver thin film deposited at the surface to nanocavities within the Si created by hydrogen ion implantation. The refractive index of the Ag-nanostructured layer is found to be 3–10% lower or higher than that of silicon for wavelengths below or beyond ∼815–900 nm, respectively. Around this wavelength range, the optical extinction values increase by a factor of 10–100 as opposed to the pure silicon case. Increasing the amount of gettered silver leads to an increased extinction as well as a redshift in wavelength position for the resonance. This resonance is attributed to the surface plasmon excitation of the resultant silver nanoparticles in silicon. Additionally, we show that the profiles for optical constants in silicon can be tailored by varying the position and number of nanocavity layers. Such silicon crystals with embedded metal nanostructures would offer novel functional base structures for applications in silicon photonics, optoelectronics, photovoltaics, and plasmonics

Charge collection in silicon strip detectors

International Nuclear Information System (INIS)

Kraner, H.W.; Beuttenmuller, R.; Ludlam, T.; Hanson, A.L.; Jones, K.W.; Radeka, V.; Heijne, E.H.M.

1982-11-01

The use of position sensitive silicon detectors as very high resolution tracking devices in high energy physics experiments has been a subject of intense development over the past few years. Typical applications call for the detection of minimum ionizing particles with position measurement accuracy of 10 μm in each detector plane. The most straightforward detector geometry is that in which one of the collecting electrodes is subdivided into closely spaced strips, giving a high degree of segmentation in one coordinate. Each strip may be read out as a separate detection element, or, alternatively, resistive and/or capacitive coupling between adjacent strips may be exploited to interpolate the position via charge division measrurements. With readout techniques that couple several strips, the numer of readout channels can, in principle, be reduced by large factors without sacrificing the intrinsic position accuracy. The testing of individual strip properties and charge division between strips has been carried out with minimum ionizing particles or beams for the most part except in one case which used alphs particless scans. This paper describes the use of a highly collimated MeV proton beam for studies of the position sensing properties of representative one dimensional strip detectors

Porous Silicon Sensors- Elusive and Erudite

OpenAIRE

H. Saha, Prof.

2017-01-01

Porous Silicon Sensors have been fabricated and tested successfully over the last few years as humidity sensors, vapour sensors, gas sensors, piezoresistive pressure sensors and bio- sensors. In each case it has displayed remarkably sensitivity, relatively low temperature operation and ease of fabrication. Brief description of fabrication and properties of all these types of different sensors is reported in this paper. The barriers of porous silicon like contact, non- uniformity, instability ...

Photoionization dynamics of glycine adsorbed on a silicon cluster: ''On-the-fly'' simulations

International Nuclear Information System (INIS)

Shemesh, Dorit; Baer, Roi; Seideman, Tamar; Gerber, R. Benny

2005-01-01

Dynamics of glycine chemisorbed on the surface of a silicon cluster is studied for a process that involves single-photon ionization, followed by recombination with the electron after a selected time delay. The process is studied by ''on-the-fly'' molecular dynamics simulations, using the semiempirical parametric method number 3 (PM3) potential energy surface. The system is taken to be in the ground state prior to photoionization, and time delays from 5 to 50 fs before the recombination are considered. The time evolution is computed over 10 ps. The main findings are (1) the positive charge after ionization is initially mostly distributed on the silicon cluster. (2) After ionization the major structural changes are on the silicon cluster. These include Si-Si bond breaking and formation and hydrogen transfer between different silicon atoms. (3) The transient ionization event gives rise to dynamical behavior that depends sensitively on the ion state lifetime. Subsequent to 45 fs evolution in the charged state, the glycine molecule starts to rotate on the silicon cluster. Implications of the results to various processes that are induced by transient transition to a charged state are discussed. These include inelastic tunneling in molecular devices, photochemistry on conducting surfaces, and electron-molecule scattering

Construction and test of a silicon drift chamber

International Nuclear Information System (INIS)

Holl, P.

1985-06-01

The present thesis presents the first fully applicable silicon detectors which work as drift chambers. Four different types of detectors were constructed. By a suitable geometry and electronic lay-out one- and two-dimensional position measurements were made possible. Chapter 2 describes function and construction of the detectors, chapter 3 their fabrication process. In chapter 4 construction and results of the test of a silicon drift chamber under laboratory conditions are described. By variation of the applied voltages the optimal operational conditions could be determined and material properties of the silicon, as for instance the electron mobility measured. A position resolution better than 5 μm at a drift length up to 4 mm was reached. Chapter 5 presents the results of the test of a silicon drift chamber under real experimental conditions in a particle beam of the super proton synchroton (SPS) of CERN. The best position resolution measured there is 10 μm. Chapter 6 summarizes the obtained results and discusses finally application possibilities and improvement proposals for silicon drift chambers. (orig./HSI) [de

Enhancing the far-ultraviolet sensitivity of silicon complementary metal oxide semiconductor imaging arrays

Science.gov (United States)

Retherford, Kurt D.; Bai, Yibin; Ryu, Kevin K.; Gregory, James A.; Welander, Paul B.; Davis, Michael W.; Greathouse, Thomas K.; Winters, Gregory S.; Suntharalingam, Vyshnavi; Beletic, James W.

2015-10-01

We report our progress toward optimizing backside-illuminated silicon P-type intrinsic N-type complementary metal oxide semiconductor devices developed by Teledyne Imaging Sensors (TIS) for far-ultraviolet (UV) planetary science applications. This project was motivated by initial measurements at Southwest Research Institute of the far-UV responsivity of backside-illuminated silicon PIN photodiode test structures, which revealed a promising QE in the 100 to 200 nm range. Our effort to advance the capabilities of thinned silicon wafers capitalizes on recent innovations in molecular beam epitaxy (MBE) doping processes. Key achievements to date include the following: (1) representative silicon test wafers were fabricated by TIS, and set up for MBE processing at MIT Lincoln Laboratory; (2) preliminary far-UV detector QE simulation runs were completed to aid MBE layer design; (3) detector fabrication was completed through the pre-MBE step; and (4) initial testing of the MBE doping process was performed on monitoring wafers, with detailed quality assessments.

The fabrication of nitrogen detector porous silicon nanostructures

Science.gov (United States)

Husairi, F. S.; Othman, N.; Eswar, K. A.; Guliling, Muliyadi; Khusaimi, Z.; Rusop, M.; Abdullah, S.

2018-05-01

In this study the porous silicon nanostructure used as a the nitrogen detector was fabricated by using anodization method because of simple and easy to handle. This method using 20 mA/ cm2 of current density and the etching time is from 10 - 40 minutes. The properties of the porous silicon nanostructure analyzed using I-V testing (electrical properties) and photoluminescence spectroscopy. From the I-V testing, sample PsiE40 where the sensitivity is 25.4% is a sensitivity of PSiE40 at 10 seconds exposure time.

Silicon-micromachined microchannel plates

International Nuclear Information System (INIS)

Beetz, Charles P.; Boerstler, Robert; Steinbeck, John; Lemieux, Bryan; Winn, David R.

2000-01-01

Microchannel plates (MCP) fabricated from standard silicon wafer substrates using a novel silicon micromachining process, together with standard silicon photolithographic process steps, are described. The resulting SiMCP microchannels have dimensions of ∼0.5 to ∼25 μm, with aspect ratios up to 300, and have the dimensional precision and absence of interstitial defects characteristic of photolithographic processing, compatible with positional matching to silicon electronics readouts. The open channel areal fraction and detection efficiency may exceed 90% on plates up to 300 mm in diameter. The resulting silicon substrates can be converted entirely to amorphous quartz (qMCP). The strip resistance and secondary emission are developed by controlled depositions of thin films, at temperatures up to 1200 deg. C, also compatible with high-temperature brazing, and can be essentially hydrogen, water and radionuclide-free. Novel secondary emitters and cesiated photocathodes can be high-temperature deposited or nucleated in the channels or the first strike surface. Results on resistivity, secondary emission and gain are presented

Emulation workbench for position sensitive gaseous scintillation detectors

International Nuclear Information System (INIS)

Pereira, L.; Margato, L.M.S.; Morozov, A.; Solovov, V.; Fraga, F. A. F.

2015-01-01

Position sensitive detectors based on gaseous scintillation proportional counters with Anger-type readout are being used in several research areas such as neutron detection, search for dark matter and neutrinoless double beta decay. Design and optimization of such detectors are complex and time consuming tasks. Simulations, while being a powerful tool, strongly depend on the light transfer models and demand accurate knowledge of many parameters, which are often not available. Here we describe an alternative approach based on the experimental evaluation of a detector using an isotropic point-like light source with precisely controllable light emission properties, installed on a 3D positioning system. The results obtained with the developed setup at validation conditions, when the scattered light is strongly suppressed show good agreement with simulations

Position-Sensitive Organic Scintillation Detectors for Nuclear Material Accountancy

International Nuclear Information System (INIS)

Hausladen, P.; Newby, J.; Blackston, M.

2015-01-01

Recent years have seen renewed interest in fast organic scintillators with pulse shape properties that enable neutron-gamma discrimination, in part because of the present shortage of He3, but primarily because of the diagnostic value of timing and pulse height information available from such scintillators. Effort at Oak Ridge National Laboratory (ORNL) associated with fast organic scintillators has concentrated on development of position-sensitive fast-neutron detectors for imaging applications. Two aspects of this effort are of interest. First, the development has revisited the fundamental limitations on pulseshape measurement imposed by photon counting statistics, properties of the scintillator, and properties of photomultiplier amplification. This idealized limit can then be used to evaluate the performance of the detector combined with data acquisition and analysis such as free-running digitizers with embedded algorithms. Second, the development of position sensitive detectors has enabled a new generation of fast-neutron imaging instruments and techniques with sufficient resolution to give new capabilities relevant to safeguards. Toward this end, ORNL has built and demonstrated a number of passive and active fast-neutron imagers, including a proof-of-concept passive imager capable of resolving individual fuel pins in an assembly via their neutron emanations. This presentation will describe the performance and construction of position-sensing fast-neutron detectors and present results of imaging measurements. (author)

The silicon vertex tracker for star and future applications of silicon drift detectors

International Nuclear Information System (INIS)

Bellwied, Rene

2001-01-01

The Silicon Vertex Tracker (SVT) for the STAR experiment at the Relativistic Heavy Ion Collider at Brookhaven National Laboratory has recently been completed and installed. First data were taken in July 2001. The SVT is based on a novel semi-conductor technology called Silicon Drift Detectors. 216 large area (6 by 6 cm) Silicon wafers were employed to build a three barrel device capable of vertexing and tracking in a high occupancy environment. Its intrinsic radiation hardness, its operation at room temperature and its excellent position resolution (better than 20 micron) in two dimensions with a one dimensional detector readout, make this technology very robust and inexpensive and thus a viable alternative to CCD, Silicon pixel and Silicon strip detectors in a variety of applications from fundamental research in high-energy and nuclear physics to astrophysics to medical imaging. I will describe the development that led to the STAR-SVT, its performance and possible applications for the near future

Waveguiding properties of Er-implanted silicon-rich oxides

International Nuclear Information System (INIS)

Elliman, R.G.; Forcales, M.; Wilkinson, A.R.; Smith, N.J.

2007-01-01

The optical properties of erbium-doped silicon-rich silicon-oxide waveguides containing amorphous silicon nanoclusters and/or silicon nanocrystals are reported. Both amorphous nanoclusters and nanocrystals are shown to act as effective sensitizers for Er, with nanocrystals being more effective at low pump powers and nanoclusters being more effective at higher pump powers. All samples are shown to exhibit photo-induced absorption, as measured for a guided 1.5 μm probe beam while the waveguide was illuminated from above with a 477 nm pump beam. At a given pump power samples containing silicon nanocrystals exhibited greater attenuation than samples containing amorphous nanoclusters. The absorption is shown to be consistent with confined-carrier absorption due to photoexcited carriers in the nanocrystals and/or nanoclusters

A large, high performance, curved 2D position-sensitive neutron detector

CERN Document Server

Fried, J W; Mahler, G J; Makowiecki, D S; Mead, J A; Radeka, V; Schaknowski, N A; Smith, G C; Yu, B

2002-01-01

A new position-sensitive neutron detector has been designed and constructed for a protein crystallography station at LANL's pulsed neutron source. This station will be one of the most advanced instruments at a major neutron user facility for protein crystallography, fiber and membrane diffraction. The detector, based on neutron absorption in sup 3 He, has a large sensitive area of 3000 cm sup 2 , angular coverage of 120 deg. , timing resolution of 1 mu s, rate capability in excess of 10 sup 6 s sup - sup 1 , position resolution of about 1.5 mm FWHM, and efficiency >50% for neutrons of interest in the range 1-10 A. Features that are key to these remarkable specifications are the utilization of eight independently operating segments within a single gas volume, fabrication of the detector vessel and internal segments with a radius of curvature of about 70 cm, optimized position readout based on charge division and signal shaping with gated baseline restoration, and engineering design with high-strength aluminum ...

Position-Sensitive Detector with Depth-of-Interaction Determination for Small Animal PET

CERN Document Server

Fedorov, A; Kholmetsky, A L; Korzhik, M V; Lecoq, P; Lobko, A S; Missevitch, O V; Tkatchev, A

2002-01-01

Crystal arrays made of LSO and LuAP crystals 2x2x10 mm pixels were manufactured for evaluation of detector with depth-of-interaction (DOI) determination capability intended for small animal positron emission tomograph. Position-sensitive LSO/LuAP phoswich DOI detector based on crystal 8x8 arrays and HAMAMATSU R5900-00-M64 position-sensitive multi-anode photomultiplier tube was developed and evaluated. Time resolution was found to be not worse than 1.0 ns FWHM for both layers, and spatial resolution mean value was 1.5 mm FWHM for the center of field-of-view.

Computed tomography with thermal neutrons and gaseous position sensitive detector

International Nuclear Information System (INIS)

Souza, Maria Ines Silvani

2001-12-01

A third generation tomographic system using a parallel thermal neutron beam and gaseous position sensitive detector has been developed along three discrete phases. At the first one, X-ray tomographic images of several objects, using a position sensitive detector designed and constructed for this purpose have been obtained. The second phase involved the conversion of that detector for thermal neutron detection, by using materials capable to convert neutrons into detectable charged particles, testing afterwards its performance in a tomographic system by evaluation the quality of the image arising from several test-objects containing materials applicable in the engineering field. High enriched 3 He, replacing the argon-methane otherwise used as filling gas for the X-ray detection, as well as, a gadolinium foil, have been utilized as converters. Besides the pure enriched 3 He, its mixture with argon-methane and later on with propane, have been also tested, in order to evaluate the detector efficiency and resolution. After each gas change, the overall performance of the tomographic system using the modified detector, has been analyzed through measurements of the related parameters. This was done by analyzing the images produced by test-objects containing several materials having well known attenuation coefficients for both thermal neutrons and X-rays. In order to compare the performance of the position sensitive detector as modified to detect thermal neutrons, with that of a conventional BF 3 detector, additional tomographs have been conducted using the last one. The results have been compared in terms of advantages, handicaps and complementary aspects for different kinds of radiation and materials. (author)

Experimental dead time corrections for a linear position-sensitive proportional counter

International Nuclear Information System (INIS)

Yelon, W.B.; Tompson, C.W.; Mildner, D.F.R.; Berliner, R.; Missouri Univ., Columbia

1984-01-01

Two simple counters included in the charge-digitization circuitry of a position-sensitive proportional counter using the charge division method for position encoding have enabled us to determine the dead time losses for the system. An interesting positional dependence of the dead time tau is observed, which agrees with a simple model. The system enables us to correct the experimental data for dead time and to be indifferent to the relatively slow analog-to-digital converters used in the system. (orig.)

Charge migration contribution to the sensitive layer of a silicon detector

International Nuclear Information System (INIS)

Croitoru, N.; Seidman, A.; Rancoita, P.G.

1984-01-01

The charge migration from the field-free region has been investigated, by comparing the expected peak position (which takes into account the depleted layer only) of the energy-loss of relativistic electrons with the measured one. The measurement sensitive layer was found to be systematically larger than the depleted one. This effect is accounted for the charge migration to diffusion

A fast large-area position-sensitive time-of-flight neutron detection system

International Nuclear Information System (INIS)

Crawford, R.K.; Haumann, J.R.

1989-01-01

A new position-sensitive time-of-flight neutron detection and histograming system has been developed for use at the Intense Pulsed Neutron Source. Spatial resolution of roughly 1 cm x 1 cm and time-of-flight resolution of ∼1 μsec are combined in a detection system which can ultimately be expanded to cover several square meters of active detector area. This system is based on the use of arrays of cylindrical one-dimensional position-sensitive proportional counters, and is capable of collecting the x-y-t data and sorting them into histograms at time-averaged data rates up to ∼300,000 events/sec over the full detector area and with instantaneous data rates up to more than fifty times that. Numerous hardware features have been incorporated to facilitate initial tuning of the position encoding, absolute calibration of the encoded positions, and automatic testing for drifts. 7 refs., 11 figs., 1 tabs

Structural Investigations using a position sensitive Neutron Detector

International Nuclear Information System (INIS)

Fruchart, D.; Anne, M.; Wolfers, P.; Lartigue, C.; Roudaut, E.

1986-01-01

In the accurate determination of the location of lights atoms such as hydrogen in a metal matrix, several types of difficulty may be encountered. Experimentally, neutron diffraction is the most convenient method for such a structure determination. The use of Position Sensitive Detectors is discussed, and selected examples illustrate the advantages and drawbacks of this type of instrument. Judging from present results, significant improvements in recording technique, data collection and reduction, and structure refinement may be obtained in the near future

Ultrafast readout of scintillating fibres using upgraded position-sensitive photomultipliers

CERN Document Server

Agoritsas, V; Ditta, J; Dufournaud, J; Giacomich, R; Gorin, A M; Kuroda, K; Meshchanin, A P; Newsom, C R; Nurushev, S B; Önel, Y M; Okada, K; Oshima, N; Pauletta, G; Penzo, Aldo L; Rakhmatov, V E; Rykalin, V I; Salvato, G; Schiavon, R P; Sillou, D; Solovyanov, V L; Takeutchi, F; Vasilev, V; Vasilchenko, V G; Villari, A C C; Yamada, R; Yoshida, T; CERN. Geneva. Detector Research and Development Committee

1991-01-01

In view of the new possibilities for event detection and tracking in future multi-TeV collider experiments, we propose to improve the performance of position-sensitive photomultipliers and, with it, to realize an ultrafast readout device of scintillating fibres; this should play a unique role in the complex of a future vertex detector, owing to its inherent subnanosecond resolving time as well as its capability of an extremely high counting rate. Our proposal is first aimed at upgrading the position-sensitive PM, in particular its space and time resolutions. Full advantage of the new phototube will be demonstrated in its immediate application to a generic prototype of a scintillating-fibre detector. Our programme also includes intensive R&D on a real-time digitization of the multihit topology, which should provide an essential back-up to the vertex tracking at extremely high rates, one of the most difficult problems relevant to the expected high performance of the LHC.

The Effect of Silicon on some Morpho-physiological Characteristics and Grain Yield of Sorghum (Sorghum bicolor L. under Salt Stress

Directory of Open Access Journals (Sweden)

S Hasibi

2016-12-01

in comparison with control. Sepideh and Payam showed the lowest sensitive to salinity. In the other genotypes, harvest index decreased more than 50%. The minimum rate of harvest index was recorded for Payam genotypes under salinity stress and silicon treatments. Under stress conditions, silicon significantly increased leaf area index in Sepideh, Payam, TN-04-83, TN-04-68, TN-04-37, TN-04-100 and TN-04-62. Chlorophyll index also increased under salinity stress using silicon treatments. The highest chlorophyll index belonged to TN-04-68 and was significantly different from the others genotypes. Use of silicon improved the membrane stability in TN-04-37, TN-04-107, TN-04-100, TN-04-71, TN-04-70, TN-04-95 and Sepideh. Conclusions The results showed that the use of silicon improved the physiological characteristics, yield and yield components of sorghum. Most of the genotypes showed a positive reaction to the applied silicon especially under stress condition. According to the results the maximum yield obtained from Sepideh (540 g m-2 and Payam (475 g m-2, respectively. It seems that among the studied genotypes, Sepideh, Payam and TN-04-100 had the best response to the silicon and showed the minimum sensitivity to the salinity stress. The most sensitive genotypes were TN-04-39, TN-04-68, and TN-04-62. In general it can be said that either under normal condition or salinity stress, silicon is able to improve yield production of grain Sorghum and its components.

Performance of a polymer coated silicon microarray for simultaneous detection of food allergen-specific IgE and IgG4.

Science.gov (United States)

Sievers, S; Cretich, M; Gagni, P; Ahrens, B; Grishina, G; Sampson, H A; Niggemann, B; Chiari, M; Beyer, K

2017-08-01

Microarray-based component-resolved diagnostics (CRD) has become an accepted tool to detect allergen-specific IgE sensitization towards hundreds of allergens in parallel from one drop of serum. Nevertheless, specificity and sensitivity as well as a simultaneous detection of allergen-specific IgG 4 , as a potential parameter for tolerance development, remain to be optimized. We applied the recently introduced silicon chip coated with a functional polymer named copoly(DMA-NAS-MAPS) to the simultaneous detection of food allergen-specific IgE and IgG 4 , and compared it with ImmunoCAP and ImmunoCAP ISAC. Inter- and intraslide variation, linearity of signal and working range, sensitivity and application of internal calibrations for IgE and IgG 4 were assessed. Native and recombinant allergenic proteins from hen's egg and cow's milk were spotted on silicon chips coated with copoly(DMA-NAS-MAPS) along with known concentrations for human IgE and IgG 4 . A serum pool and 105 patient samples were assessed quantitatively and semi-quantitatively with the ImmunoCAP and ImmunoCAP ISAC and correlated with IgE- and IgG 4 -specific fluorescence on silicon microarrays. Allergen-specific IgE and IgG 4 were detected in parallel using two fluorescent dyes with no crosstalk. Results from the ImmunoCAP correlated better with microarray fluorescence than with ImmunoCAP ISAC except for the allergen ovomucoid. The working range of the silicon microarray for total hen's egg-specific IgE was comparable to the range of 0.1 to >100 kU A /L of the ImmunoCAP system, whereas for total cow's milk, the silicon microarray was less sensitive. Detectable allergen-specific IgG 4 could be determined only for low concentrations, but still correlated positively with ImmunoCAP results. We confirmed the ability of the polymer coated silicon microarray to be comparably sensitive to the ImmunoCAP ISAC for various food allergens. This suggests that the copoly(DMA-NAS-MAPS) microarray is a low-cost, self

3D characterisation of tool wear whilst diamond turning silicon

OpenAIRE

Durazo-Cardenas, Isidro Sergio; Shore, Paul; Luo, X.; Jacklin, T.; Impey, S. A.; Cox, A.

2006-01-01

Nanometrically smooth infrared silicon optics can be manufactured by the diamond turning process. Due to its relatively low density, silicon is an ideal optical material for weight sensitive infrared (IR) applications. However, rapid diamond tool edge degradation and the effect on the achieved surface have prevented significant exploitation. With the aim of developing a process model to optimise the diamond turning of silicon optics, a series of experimental trials were devi...

Study of 236U/238U ratio at CIRCE using a 16-strip silicon detector with a TOF system

Science.gov (United States)

De Cesare, M.; De Cesare, N.; D'Onofrio, A.; Gialanella, L.; Terrasi, F.

2015-04-01

Accelerator Mass Spectrometry (AMS) is presently the most sensitive technique for the measurement of long-lived actinides, e.g. 236U and xPu isotopes. A new actinide AMS system, based on a 3-MV pelletron tandem accelerator, is operated at the Center for Isotopic Research on Cultural and Environmental Heritage (CIRCE) in Caserta, Italy. In this paper we report on the procedure adopted to increase the 236U abundance sensitivity as low as possible. The energy and position determinations of the 236U ions, using a 16-strip silicon detector have been obtained. A 236U/238U isotopic ratio background level of about 2.9×10-11 was obtained, summing over all the strips, using a Time of Flight-Energy (TOF-E) system with a 16-strip silicon detector (4.9×10-12 just with one strip).

Effect of Silicon on Intergranular Corrosion Resistance of Ti-stabilized 11 wt% Cr Ferritic Stainless Steels

International Nuclear Information System (INIS)

Hyun, Youngmin; Kim, Heesan

2013-01-01

Ti-stabilized 11 wt% Cr ferritic stainless steels (FSSs) for automotive exhaust systems have been experienced intergranular corrosion (IC) in some heat-affected zone (HAZ). The effects of sensitizing heat-treatment and silicon on IC were studied. Time-Temperature-Sensitization (TTS) curves showed that sensitization to IC was observed at the steels heat-treated at the temperature lower than 650 .deg. C and that silicon improved IC resistance. The sensitization was explained by chromium depletion theory, where chromium is depleted by precipitation of chromium carbide during sensitizing heat-treatment. It was confirmed with the results from the analysis of precipitates as well as the thermodynamical prediction of stable phases. In addition, the role of silicon on IC was explained with the stabilization of grain boundary. In other words, silicon promoted the formation of the grain boundaries with low energy where precipitation was suppressed and consequently, the formation of Cr-depleted zone was retarded. The effect of silicon on the formation of grain boundaries with low energy was proved by the analysis of coincidence site lattice (CSL) grain boundary, which is a typical grain boundary with low energy

Effect of Silicon on Intergranular Corrosion Resistance of Ti-stabilized 11 wt% Cr Ferritic Stainless Steels

Energy Technology Data Exchange (ETDEWEB)

Hyun, Youngmin; Kim, Heesan [Hongik Univ., Sejong (Korea, Republic of)

2013-06-15

Ti-stabilized 11 wt% Cr ferritic stainless steels (FSSs) for automotive exhaust systems have been experienced intergranular corrosion (IC) in some heat-affected zone (HAZ). The effects of sensitizing heat-treatment and silicon on IC were studied. Time-Temperature-Sensitization (TTS) curves showed that sensitization to IC was observed at the steels heat-treated at the temperature lower than 650 .deg. C and that silicon improved IC resistance. The sensitization was explained by chromium depletion theory, where chromium is depleted by precipitation of chromium carbide during sensitizing heat-treatment. It was confirmed with the results from the analysis of precipitates as well as the thermodynamical prediction of stable phases. In addition, the role of silicon on IC was explained with the stabilization of grain boundary. In other words, silicon promoted the formation of the grain boundaries with low energy where precipitation was suppressed and consequently, the formation of Cr-depleted zone was retarded. The effect of silicon on the formation of grain boundaries with low energy was proved by the analysis of coincidence site lattice (CSL) grain boundary, which is a typical grain boundary with low energy.

Ultra-fast silicon detectors

Energy Technology Data Exchange (ETDEWEB)

Sadrozinski, H. F.-W., E-mail: hartmut@scipp.ucsc.edu [Santa Cruz Institute for Particle Physics, UC Santa Cruz, Santa Cruz, CA 95064 (United States); Ely, S.; Fadeyev, V.; Galloway, Z.; Ngo, J.; Parker, C.; Petersen, B.; Seiden, A.; Zatserklyaniy, A. [Santa Cruz Institute for Particle Physics, UC Santa Cruz, Santa Cruz, CA 95064 (United States); Cartiglia, N.; Marchetto, F. [INFN Torino, Torino (Italy); Bruzzi, M.; Mori, R.; Scaringella, M.; Vinattieri, A. [University of Florence, Department of Physics and Astronomy, Sesto Fiorentino, Firenze (Italy)

2013-12-01

We propose to develop a fast, thin silicon sensor with gain capable to concurrently measure with high precision the space (∼10 μm) and time (∼10 ps) coordinates of a particle. This will open up new application of silicon detector systems in many fields. Our analysis of detector properties indicates that it is possible to improve the timing characteristics of silicon-based tracking sensors, which already have sufficient position resolution, to achieve four-dimensional high-precision measurements. The basic sensor characteristics and the expected performance are listed, the wide field of applications are mentioned and the required R and D topics are discussed. -- Highlights: •We are proposing thin pixel silicon sensors with 10's of picoseconds time resolution. •Fast charge collection is coupled with internal charge multiplication. •The truly 4-D sensors will revolutionize imaging and particle counting in many applications.

Silicon mediated biochemical changes in wheat under salinized and ...

African Journals Online (AJOL)

Silicon (Si) can alleviate salinity damage, a major threat to agriculture that causes instability in wheat production. We report on the effects of silicon (150 mg L-1) on the morphological, physiological and biochemical traits in wheat (Triticum aestivum L.) cultivars (salt sensitive; Auqab-2000 and salt tolerant; SARC-5) differing ...

Microelectronic temperature sensor; silicon temperature sensor

International Nuclear Information System (INIS)

Beitner, M.; Kanert, W.; Reichert, H.

1982-01-01

The goal of this work was to develop a silicon temperature sensor with a sensitivity and a reliability as high and a tolerance as small as possible, for use in measurement and control. By employing the principle of spreading-resistance, using silicon doped by neutron transmutation, and trimming of the single wafer tolerances of resistance less than +- 5% can be obtained; overstress tests yielded a long-term stability better than 0.2%. Some applications show the advantageous use of this sensor. (orig.) [de

Enhanced light emission in photonic crystal nanocavities with Erbium-doped silicon nanocrystals

International Nuclear Information System (INIS)

Makarova, Maria; Sih, Vanessa; Vuckovic, Jelena; Warga, Joe; Li Rui; Dal Negro, Luca

2008-01-01

Photonic crystal nanocavities are fabricated in silicon membranes covered by thermally annealed silicon-rich nitride films with Erbium-doped silicon nanocrystals. Silicon nitride films were deposited by sputtering on top of silicon on insulator wafers. The nanocavities were carefully designed in order to enhance emission from the nanocrystal sensitized Erbium at the 1540 nm wavelength. Experimentally measured quality factors of ∼6000 were found to be consistent theoretical predictions. The Purcell factor of 1.4 was estimated from the observed 20-fold enhancement of Erbium luminescence

Photonic Crystal Sensors Based on Porous Silicon

Directory of Open Access Journals (Sweden)

Claudia Pacholski

2013-04-01

Full Text Available Porous silicon has been established as an excellent sensing platform for the optical detection of hazardous chemicals and biomolecular interactions such as DNA hybridization, antigen/antibody binding, and enzymatic reactions. Its porous nature provides a high surface area within a small volume, which can be easily controlled by changing the pore sizes. As the porosity and consequently the refractive index of an etched porous silicon layer depends on the electrochemial etching conditions photonic crystals composed of multilayered porous silicon films with well-resolved and narrow optical reflectivity features can easily be obtained. The prominent optical response of the photonic crystal decreases the detection limit and therefore increases the sensitivity of porous silicon sensors in comparison to sensors utilizing Fabry-Pérot based optical transduction. Development of porous silicon photonic crystal sensors which allow for the detection of analytes by the naked eye using a simple color change or the fabrication of stacked porous silicon photonic crystals showing two distinct optical features which can be utilized for the discrimination of analytes emphasize its high application potential.

Photonic Crystal Sensors Based on Porous Silicon

Science.gov (United States)

Pacholski, Claudia

2013-01-01

Porous silicon has been established as an excellent sensing platform for the optical detection of hazardous chemicals and biomolecular interactions such as DNA hybridization, antigen/antibody binding, and enzymatic reactions. Its porous nature provides a high surface area within a small volume, which can be easily controlled by changing the pore sizes. As the porosity and consequently the refractive index of an etched porous silicon layer depends on the electrochemial etching conditions photonic crystals composed of multilayered porous silicon films with well-resolved and narrow optical reflectivity features can easily be obtained. The prominent optical response of the photonic crystal decreases the detection limit and therefore increases the sensitivity of porous silicon sensors in comparison to sensors utilizing Fabry-Pérot based optical transduction. Development of porous silicon photonic crystal sensors which allow for the detection of analytes by the naked eye using a simple color change or the fabrication of stacked porous silicon photonic crystals showing two distinct optical features which can be utilized for the discrimination of analytes emphasize its high application potential. PMID:23571671

Passive Removal of Silicone Oil with Temporal Head Position through Two 23-Gauge Cannulas

Directory of Open Access Journals (Sweden)

Zhong Lin

2016-01-01

Full Text Available Purpose. To report a new approach for removal of silicone oil. Methods. All surgeries were performed using 23-gauge vitrectomy system with two transconjunctival sutureless cannulas. At the beginning, most of the silicone oil was removed by traditional microinvasive vitrectomy system through inferior-temporal cannula. Then, the blood transfusion tube is removed from the inferior-temporal cannula, and the fluid-air exchange is performed. A passive fluid-air exchange was performed to aspirate the residual silicone oil after gradually turning the patient’s head temporally by approximately 90° gradually. Results. After the surgery, all patients had a clear anterior chamber and vitreous cavity on slit lamp and B scan examination, respectively. The mean time taken for silicone oil removal and total surgery was 8.0±1.4 minutes and 12.4±2.5 minutes, respectively. The mean intraocular pressure 1 day, 3 days, 1 week, 1 month, and 3 months after surgery was 9.0±5.8 mmHg, 11.3±7.6 mmHg, 16.1±6.9 mmHg, 17.7±4.8 mmHg, and 17.1±3.5 mmHg, respectively. Conclusion. This new approach may provide a safe and fast method to remove the silicone oil.

Reciprocal space analysis of the microstructure of luminescent and nonluminescent porous silicon films

International Nuclear Information System (INIS)

Lee, S.R.; Barbour, J.C.; Medernach, J.W.; Stevenson, J.O.; Custer, J.S.

1994-01-01

The microstructure of anodically prepared porous silicon films was determined using a novel X-ray diffraction technique. This technique uses double-crystal diffractometry combined with position-sensitive X- ray detection to efficiently and quantitatively image the reciprocal space structure of crystalline materials. Reciprocal space analysis of newly prepared, as well as aged, p - porous silicon films showed that these films exhibit a very broad range of crystallinity. This material appears to range in structure from a strained, single-crystal, sponge-like material exhibiting long-range coherency to isolated, dilated nanocrystals embedded in an amorphous matrix. Reciprocal space analysis of n + and p + porous silicon showed these materials are strained single-crystals with a spatially-correlated array of vertical pores. The vertical pores in these crystals may be surrounded by nanoporous or nanocrystalline domains as small as a few nm in size which produce diffuse diffraction indicating their presence. The photoluminescence of these films was examined using 488 nm Ar laser excitation in order to search for possible correlations between photoluminescent intensity and crystalline microstructure

Silicon sensor probing and radiation studies for the LHCb silicon tracker

International Nuclear Information System (INIS)

Lois, Cristina

2006-01-01

The LHCb Silicon Tracker (ST) will be built using silicon micro-strip technology. A total of 1400 sensors, with strip pitches of approximately 200μm and three different substrate thicknesses, will be used to cover the sensitive area with readout strips up to 38cm in length. We present the quality assurance program followed by the ST group together with the results obtained for the first batches of sensors from the main production. In addition, we report on an investigation of the radiation hardness of the sensors. Prototype sensors were irradiated with 24GeV/c protons up to fluences equivalent to 20 years of LHCb operation. The damage coefficient for the leakage current was studied, and full depletion voltages were determined

High Sensitivity pH Sensor Based on Porous Silicon (PSi) Extended Gate Field-Effect Transistor.

Science.gov (United States)

Al-Hardan, Naif H; Abdul Hamid, Muhammad Azmi; Ahmed, Naser M; Jalar, Azman; Shamsudin, Roslinda; Othman, Norinsan Kamil; Kar Keng, Lim; Chiu, Weesiong; Al-Rawi, Hamzah N

2016-06-07

In this study, porous silicon (PSi) was prepared and tested as an extended gate field-effect transistor (EGFET) for pH sensing. The prepared PSi has pore sizes in the range of 500 to 750 nm with a depth of approximately 42 µm. The results of testing PSi for hydrogen ion sensing in different pH buffer solutions reveal that the PSi has a sensitivity value of 66 mV/pH that is considered a super Nernstian value. The sensor considers stability to be in the pH range of 2 to 12. The hysteresis values of the prepared PSi sensor were approximately 8.2 and 10.5 mV in the low and high pH loop, respectively. The result of this study reveals a promising application of PSi in the field for detecting hydrogen ions in different solutions.

The position dependent influence that sensitivity correction processing gives the signal-to-noise ratio measurement in parallel imaging

International Nuclear Information System (INIS)

Murakami, Koichi; Yoshida, Koji; Yanagimoto, Shinichi

2012-01-01

We studied the position dependent influence that sensitivity correction processing gave the signal-to-noise ratio (SNR) measurement of parallel imaging (PI). Sensitivity correction processing that referred to the sensitivity distribution of the body coil improved regional uniformity more than the sensitivity uniformity correction filter with a fixed correction factor. In addition, the position dependent influence to give the SNR measurement in PI was different from the sensitivity correction processing. Therefore, if we divide SNR of the sensitivity correction processing image by SNR of the original image in each pixel and calculate SNR ratio, we can show the position dependent influence that sensitivity correction processing gives the SNR measurement in PI. It is with an index of the sensitivity correction processing precision. (author)

Head position in the MEG helmet affects the sensitivity to anterior sources.

Science.gov (United States)

Marinkovic, K; Cox, B; Reid, K; Halgren, E

2004-11-30

Current MEG instruments derive the whole-head coverage by utilizing a helmet-shaped opening at the bottom of the dewar. These helmets, however, are quite a bit larger than most people's heads so subjects commonly lean against the back wall of the helmet in order to maintain a steady position. In such cases the anterior brain sources may be too distant to be picked up by the sensors reliably. Potential "invisibility" of the frontal and anterior temporal sources may be particularly troublesome for the studies of cognition and language, as they are subserved significantly by these areas. We examined the sensitivity of the distributed anatomically-constrained MEG (aMEG) approach to the head position ("front" vs. "back") secured within a helmet with custom-tailored bite-bars during a lexical decision task. The anterior head position indeed resulted in much greater sensitivity to language-related activity in frontal and anterior temporal locations. These results emphasize the need to adjust the head position in the helmet in order to maximize the "visibility" of the sources in the anterior brain regions in cognitive and language tasks.

Cerium doped GSO scintillators and its application to position sensitive detectors

International Nuclear Information System (INIS)

Ishibashi, H.; Shimizu, K.; Susa, K.; Kubota, S.

1989-01-01

The dependence of the light output and the decay times of Ce doped Gd/sub 2/SiO/sub 5/ on Ce concentration is measured. By using the difference in decay times on Ce concentration for GSO(Ce), the combination of different concentration of GSO(Ce) scintillators is shown to be useful as position sensitive detectors. A Ce doped Gd/sub 2/SiO/sub 5/ (GSO(Ce)) single crystal is an excellent scintillator featuring, a large light output, a short decay time and a high absorption coefficient. Further investigation aimed at its implementation to scintillators has been carried out previously. An application of the GSO(Ce) scintillators to the gamma-ray detectors of positron emission computed tomography has also been shown. The authors have investigated the dependence of its scintillation properties on the Ce concentration and its application to position sensitive detectors

Silicon Detectors for PET and SPECT

Science.gov (United States)

Cochran, Eric R.

Silicon detectors use state-of-the-art electronics to take advantage of the semiconductor properties of silicon to produce very high resolution radiation detectors. These detectors have been a fundamental part of high energy, nuclear, and astroparticle physics experiments for decades, and they hold great potential for significant gains in both PET and SPECT applications. Two separate prototype nuclear medicine imaging systems have been developed to explore this potential. Both devices take advantage of the unique properties of high resolution pixelated silicon detectors, designed and developed as part of the CIMA collaboration and built at The Ohio State University. The first prototype is a Compton SPECT imaging system. Compton SPECT, also referred to as electronic collimation, is a fundamentally different approach to single photon imaging from standard gamma cameras. It removes the inherent coupling of spatial resolution and sensitivity in mechanically collimated systems and provides improved performance at higher energies. As a result, Compton SPECT creates opportunities for the development of new radiopharmaceuticals based on higher energy isotopes as well as opportunities to expand the use of current isotopes such as 131I due to the increased resolution and sensitivity. The Compton SPECT prototype consists of a single high resolution silicon detector, configured in a 2D geometry, in coincidence with a standard NaI scintillator detector. Images of point sources have been taken for 99mTc (140 keV), 131I (364keV), and 22Na (511 keV), demonstrating the performance of high resolution silicon detectors in a Compton SPECT system. Filtered back projection image resolutions of 10 mm, 7.5 mm, and 6.7 mm were achieved for the three different sources respectively. The results compare well with typical SPECT resolutions of 5-15 mm and validate the claims of improved performance in Compton SPECT imaging devices at higher source energies. They also support the potential of

Application of digital waveform processing to position-sensitive proportional counter

International Nuclear Information System (INIS)

Takenaka, Yasuto; Uritani, Akira; Mori, Chizuo

1995-01-01

In a charge-division type position-sensitive proportional counter (PSPC) with an anode wire of small resistance, a reflected component from an opposite end and thermal noise involved in signals deteriorate the position resolution of the PSPC. A digital waveform processing method was applied to the reduction of these undesirable effects by skillfully utilizing their signal characteristics that can be observed as inversely correlative signals between two-output signals from both sides of the PSPC. The digital waveform processing could improve the position resolution compared to a conventional pulse height processing method with analog filters. When the digital waveform processing was applied to signals of an equivalent circuit simulating the PSPC, the position resolutions defined by the full width at half maximum were improved to about 30% of those of conventional analog pulse processing. In the case of an actual PSPC, the position resolutions by the digital waveform processing were improved by 4-10% as compared with those of conventional pulse height processing. (author)

Multivariate analysis of TOF-SIMS spectra of monolayers on scribed silicon.

Science.gov (United States)

Yang, Li; Lua, Yit-Yian; Jiang, Guilin; Tyler, Bonnie J; Linford, Matthew R

2005-07-15

Static time-of-flight secondary ion mass spectrometry (TOF-SIMS) was performed on monolayers on scribed silicon (Si(scr)) derived from 1-alkenes, 1-alkynes, 1-holoalkanes, aldehydes, and acid chlorides. To rapidly determine the variation in the data without introducing user bias, a multivariate analysis was performed. First, principal components analysis (PCA) was done on data obtained from silicon scribed with homologous series of aldehydes and acid chlorides. For this study, the positive ion spectra, the negative ion spectra, and the concatentated (linked) positive and negative ion spectra were preprocessed by normalization, mean centering, and autoscaling. The mean centered data consistently showed the best correlations between the scores on PC1 and the number of carbon atoms in the adsorbate. These correlations were not as strong for the normalized and autoscaled data. After reviewing these methods, it was concluded that mean centering is the best preprocessing method for TOF-SIMS spectra of monolayers on Si(scr). A PCA analysis of all of the positive ion spectra revealed a good correlation between the number of carbon atoms in all of the adsorbates and the scores on PC1. PCA of all of the negative ion spectra and the concatenated positive and negative ion spectra showed a correlation based on the number of carbon atoms in the adsorbate and the class of the adsorbate. These results imply that the positive ion spectra are most sensitive to monolayer thickness, while the negative ion spectra are sensitive to the nature of the substrate-monolayer interface and the monolayer thickness. Loadings show an inverse relationship between (inorganic) fragments that are expected from the substrate and (organic) fragments expected from the monolayer. Multivariate peak intensity ratios were derived. It is also suggested that PCA can be used to detect outlier surfaces. Partial least squares showed a strong correlation between the number of carbon atoms in the adsorbate and the

Use of Opioid Medications for Employees in Critical Safety or Security Positions and Positions with Safety Sensitive Duties

Science.gov (United States)

2017-01-30

can cause harm) to the physical well-being of or jeopardize the security of the employee , co-workers, customers or the general public through a lapse...DEPARTMENT OF THE ARMY US ARMY PUBLIC HEALTH CENTER 5158 BLACKHAWK ROAD ABERDEEN PROVING GROUND MARYLAND 21010-5403 Directorate of Clinical... Employees in Critical Safety or Security Positions and Positions with Safety Sensitive Duties. 1. REFERENCES. A. Army Regulation 40-5, Preventive

Belle II silicon vertex detector

Energy Technology Data Exchange (ETDEWEB)

Adamczyk, K. [H. Niewodniczanski Institute of Nuclear Physics, Krakow 31-342 (Poland); Aihara, H. [Department of Physics, University of Tokyo, Tokyo 113-0033 (Japan); Angelini, C. [Dipartimento di Fisica, Università di Pisa, I-56127 Pisa (Italy); INFN Sezione di Pisa, I-56127 Pisa (Italy); Aziz, T.; Babu, V. [Tata Institute of Fundamental Research, Mumbai 400005 (India); Bacher, S. [H. Niewodniczanski Institute of Nuclear Physics, Krakow 31-342 (Poland); Bahinipati, S. [Indian Institute of Technology Bhubaneswar, Satya Nagar (India); Barberio, E.; Baroncelli, Ti.; Baroncelli, To. [School of Physics, University of Melbourne, Melbourne, Victoria 3010 (Australia); Basith, A.K. [Indian Institute of Technology Madras, Chennai 600036 (India); Batignani, G. [Dipartimento di Fisica, Università di Pisa, I-56127 Pisa (Italy); INFN Sezione di Pisa, I-56127 Pisa (Italy); Bauer, A. [Institute of High Energy Physics, Austrian Academy of Sciences, 1050 Vienna (Austria); Behera, P.K. [Indian Institute of Technology Madras, Chennai 600036 (India); Bergauer, T. [Institute of High Energy Physics, Austrian Academy of Sciences, 1050 Vienna (Austria); Bettarini, S. [Dipartimento di Fisica, Università di Pisa, I-56127 Pisa (Italy); INFN Sezione di Pisa, I-56127 Pisa (Italy); Bhuyan, B. [Indian Institute of Technology Guwahati, Assam 781039 (India); Bilka, T. [Faculty of Mathematics and Physics, Charles University, 121 16 Prague (Czech Republic); Bosi, F. [INFN Sezione di Pisa, I-56127 Pisa (Italy); Bosisio, L. [Dipartimento di Fisica, Università di Trieste, I-34127 Trieste (Italy); INFN Sezione di Trieste, I-34127 Trieste (Italy); and others

2016-09-21

The Belle II experiment at the SuperKEKB collider in Japan is designed to indirectly probe new physics using approximately 50 times the data recorded by its predecessor. An accurate determination of the decay-point position of subatomic particles such as beauty and charm hadrons as well as a precise measurement of low-momentum charged particles will play a key role in this pursuit. These will be accomplished by an inner tracking device comprising two layers of pixelated silicon detector and four layers of silicon vertex detector based on double-sided microstrip sensors. We describe herein the design, prototyping and construction efforts of the Belle-II silicon vertex detector.

A novel method for assessing position-sensitive detector performance

International Nuclear Information System (INIS)

Clinthorne, N.H.; Rogers, W.L.; Shao, L.; Hero, A.O. III; Koral, K.F.

1989-01-01

A marked point process model of a position-sensitive detector is developed which includes the effects of detector efficiency, spatial response, energy response, and source statistics. The average mutual information between the incident distribution of γ rays and the detector response is derived and used as a performance index for detector optimization. A brief example is presented which uses this figure-of-merit for optimization of light guide dimensions for a modular scintillation camera

The Alignment of the CMS Silicon Tracker

CERN Document Server

Lampen, Pekka Tapio

2013-01-01

The CMS all-silicon tracker consists of 16588 modules, embedded in a solenoidal magnet providing a field of B = 3.8 T. The targeted performance requires that the alignment determines the module positions with a precision of a few micrometers. Ultimate local precision is reached by the determination of sensor curvatures, challenging the algorithms to determine about 200k parameters simultaneously, as is feasible with the Millepede II program. The main remaining challenge are global distortions that systematically bias the track parameters and thus physics measurements. They are controlled by adding further information into the alignment workflow, e.g. the mass of decaying resonances or track data taken with B = 0 T. To make use of the latter and also to integrate the determination of the Lorentz angle into the alignment procedure, the alignment framework has been extended to treat position sensitive calibration parameters. This is relevant since due to the increased LHC luminosity in 2012, the Lorentz angle ex...

Singlet oxygen sensitizing materials based on porous silicone: photochemical characterization, effect of dye reloading and application to water disinfection with solar reactors.

Science.gov (United States)

Manjón, Francisco; Santana-Magaña, Montserrat; García-Fresnadillo, David; Orellana, Guillermo

2010-06-01

Photogeneration of singlet molecular oxygen ((1)O(2)) is applied to organic synthesis (photooxidations), atmosphere/water treatment (disinfection), antibiofouling materials and in photodynamic therapy of cancer. In this paper, (1)O(2) photosensitizing materials containing the dyes tris(4,4'-diphenyl-2,2'-bipyridine)ruthenium(II) (1, RDB(2+)) or tris(4,7-diphenyl-1,10-phenanthroline)ruthenium(II) (2, RDP(2+)), immobilized on porous silicone (abbreviated RDB/pSil and RDP/pSil), have been produced and tested for waterborne Enterococcus faecalis inactivation using a laboratory solar simulator and a compound parabolic collector (CPC)-based solar photoreactor. In order to investigate the feasibility of its reuse, the sunlight-exposed RDP/pSil sensitizing material (RDP/pSil-a) has been reloaded with RDP(2+) (RDP/pSil-r). Surprisingly, results for bacteria inactivation with the reloaded material have demonstrated a 4-fold higher efficiency compared to those of either RDP/pSil-a, unused RDB/pSil and the original RDP/pSil. Surface and bulk photochemical characterization of the new material (RDP/pSil-r) has shown that the bactericidal efficiency enhancement is due to aggregation of the silicone-supported photosensitizer on the surface of the polymer, as evidenced by confocal fluorescence lifetime imaging microscopy (FLIM). Photogenerated (1)O(2) lifetimes in the wet sensitizer-doped silicone have been determined to be ten times longer than in water. These facts, together with the water rheology in the solar reactor and the interfacial production of the biocidal species, account for the more effective disinfection observed with the reloaded photosensitizing material. These results extend and improve the operational lifetime of photocatalytic materials for point-of-use (1)O(2)-mediated solar water disinfection.

NA62 Gigatracker sets new standards for silicon detectors

CERN Multimedia

CERN Bulletin

2011-01-01

The NA62 experiment should start collecting its first data (technical run) in a little over one year. At the heart of the experiment is the Gigatracker, a newly conceived silicon pixel detector, whose job is to measure the arrival time and the position of the incoming beam particles. The demonstration detector has recently shown a time resolution of 175 picoseconds, an unprecedented record in the field of silicon pixel detectors.   The Gigatracker prototype. A 115 metre long vacuum tank, a brand new set of detectors surrounding it and an extremely rare decay to study: this is the new NA62 detector, foreseen to be installed in the SPS North Area in 2012. “We will study a very rare decay of the K+. Such a decay is sensitive to contributions coming from new particles and therefore represents a powerful way of searching for new physics, complementary to the direct approach of the LHC detectors,” explains Augusto Ceccucci, NA62 spokesperson. The particles from the SPS accelerator a...

Sunlight-thin nanophotonic monocrystalline silicon solar cells

Science.gov (United States)

Depauw, Valérie; Trompoukis, Christos; Massiot, Inès; Chen, Wanghua; Dmitriev, Alexandre; Cabarrocas, Pere Roca i.; Gordon, Ivan; Poortmans, Jef

2017-09-01

Introducing nanophotonics into photovoltaics sets the path for scaling down the surface texture of crystalline-silicon solar cells from the micro- to the nanoscale, allowing to further boost the photon absorption while reducing silicon material loss. However, keeping excellent electrical performance has proven to be very challenging, as the absorber is damaged by the nanotexturing and the sensitivity to the surface recombination is dramatically increased. Here we realize a light-wavelength-scale nanotextured monocrystalline silicon cell with the confirmed efficiency of 8.6% and an effective thickness of only 830 nm. For this we adopt a self-assembled large-area and industry-compatible amorphous ordered nanopatterning, combined with an advanced surface passivation, earning strongly enhanced solar light absorption while retaining efficient electron collection. This prompts the development of highly efficient flexible and semitransparent photovoltaics, based on the industrially mature monocrystalline silicon technology.

Amorphous silicon radiation detectors

Science.gov (United States)

Street, Robert A.; Perez-Mendez, Victor; Kaplan, Selig N.

1992-01-01

Hydrogenated amorphous silicon radiation detector devices having enhanced signal are disclosed. Specifically provided are transversely oriented electrode layers and layered detector configurations of amorphous silicon, the structure of which allow high electric fields upon application of a bias thereby beneficially resulting in a reduction in noise from contact injection and an increase in signal including avalanche multiplication and gain of the signal produced by incoming high energy radiation. These enhanced radiation sensitive devices can be used as measuring and detection means for visible light, low energy photons and high energy ionizing particles such as electrons, x-rays, alpha particles, beta particles and gamma radiation. Particular utility of the device is disclosed for precision powder crystallography and biological identification.

Study of 236U/238U ratio at CIRCE using a 16-strip silicon detector with a TOF system

Directory of Open Access Journals (Sweden)

De Cesare M.

2015-01-01

Full Text Available Accelerator Mass Spectrometry (AMS is presently the most sensitive technique for the measurement of long-lived actinides, e.g. 236U and xPu isotopes. A new actinide AMS system, based on a 3-MV pelletron tandem accelerator, is operated at the Center for Isotopic Research on Cultural and Environmental Heritage (CIRCE in Caserta, Italy. In this paper we report on the procedure adopted to increase the 236U abundance sensitivity as low as possible. The energy and position determinations of the 236U ions, using a 16-strip silicon detector have been obtained. A 236U/238U isotopic ratio background level of about 2.9×10−11 was obtained, summing over all the strips, using a Time of Flight-Energy (TOF-E system with a 16-strip silicon detector (4.9×10−12 just with one strip.

The performance of silicon detectors for the SiliPET project: A small animal PET scanner based on stacks of silicon detectors

International Nuclear Information System (INIS)

Auricchio, Natalia; Domenico, Giovanni di; Zavattini, Guido; Milano, Luciano; Malaguti, Roberto

2011-01-01

We propose a new scanner for small animal Positron Emission Tomography (PET) based on stacks of double sided silicon detectors. Each stack is made of 40 planar detectors with dimension 60x60x1 mm 3 and 128 orthogonal strips on both sides to read the two coordinates of interaction, the third being the detector number in the stack. Multiple interactions in a stack are discarded by an exclusive OR applied between each detector plane of a stack. In this way we achieve a precise determination of the interaction point of the two 511 keV photons. The reduced dimensions of the scanner also improve the solid angle coverage resulting in a high sensitivity. Preliminary results were obtained with MEGA prototype tracker (11 double sided Si detector layers), divided into two stacks 2 cm apart made of, respectively, 5 and 6 prototype layers, placing a small spherical 22 Na source in different positions. We report on the results, spatial resolution, imaging and timing performances obtained with double sided silicon detectors, manufactured by ITC-FBK, having an active area of 3x3 cm 2 , thickness of 1 mm and a strip pitch of 500μm. Two different strip widths of 300 and 200μm equipped with 64 orthogonal p and n strips on opposite sides were read out with the VATAGP2.5 ASIC, a 128-channel 'general purpose' charge sensitive amplifier.

Multifunctional porous silicon nanopillar arrays: antireflection, superhydrophobicity, photoluminescence, and surface-enhanced Raman scattering

International Nuclear Information System (INIS)

Kiraly, Brian; Yang, Shikuan; Huang, Tony Jun

2013-01-01

We have fabricated porous silicon nanopillar arrays over large areas with a rapid, simple, and low-cost technique. The porous silicon nanopillars show unique longitudinal features along their entire length and have porosity with dimensions on the single-nanometer scale. Both Raman spectroscopy and photoluminescence data were used to determine the nanocrystallite size to be <3 nm. The porous silicon nanopillar arrays also maintained excellent ensemble properties, reducing reflection nearly fivefold from planar silicon in the visible range without any optimization, and approaching superhydrophobic behavior with increasing aspect ratio, demonstrating contact angles up to 138°. Finally, the porous silicon nanopillar arrays were made into sensitive surface-enhanced Raman scattering (SERS) substrates by depositing metal onto the pillars. The SERS performance of the substrates was demonstrated using a chemical dye Rhodamine 6G. With their multitude of properties (i.e., antireflection, superhydrophobicity, photoluminescence, and sensitive SERS), the porous silicon nanopillar arrays described here can be valuable in applications such as solar harvesting, electrochemical cells, self-cleaning devices, and dynamic biological monitoring. (paper)

High Sensitivity pH Sensor Based on Porous Silicon (PSi Extended Gate Field-Effect Transistor

Directory of Open Access Journals (Sweden)

Naif H. Al-Hardan

2016-06-01

Full Text Available In this study, porous silicon (PSi was prepared and tested as an extended gate field-effect transistor (EGFET for pH sensing. The prepared PSi has pore sizes in the range of 500 to 750 nm with a depth of approximately 42 µm. The results of testing PSi for hydrogen ion sensing in different pH buffer solutions reveal that the PSi has a sensitivity value of 66 mV/pH that is considered a super Nernstian value. The sensor considers stability to be in the pH range of 2 to 12. The hysteresis values of the prepared PSi sensor were approximately 8.2 and 10.5 mV in the low and high pH loop, respectively. The result of this study reveals a promising application of PSi in the field for detecting hydrogen ions in different solutions.

Characterization of Sensitivity Encoded Silicon Photomultiplier (SeSP) with 1-Dimensional and 2-Dimensional Encoding for High Resolution PET/MR

Science.gov (United States)

Omidvari, Negar; Schulz, Volkmar

2015-06-01

This paper evaluates the performance of a new type of PET detectors called sensitivity encoded silicon photomultiplier (SeSP), which allows a direct coupling of small-pitch crystal arrays to the detector with a reduction in the number of readout channels. Four SeSP devices with two separate encoding schemes of 1D and 2D were investigated in this study. Furthermore, both encoding schemes were manufactured in two different sizes of 4 ×4 mm2 and 7. 73 ×7. 9 mm2, in order to investigate the effect of size on detector parameters. All devices were coupled to LYSO crystal arrays with 1 mm pitch size and 10 mm height, with optical isolation between crystals. The characterization was done for the key parameters of crystal-identification, energy resolution, and time resolution as a function of triggering threshold and over-voltage (OV). Position information was archived using the center of gravity (CoG) algorithm and a least squares approach (LSQA) in combination with a mean light matrix around the photo-peak. The positioning results proved the capability of all four SeSP devices in precisely identifying all crystals coupled to the sensors. Energy resolution was measured at different bias voltages, varying from 12% to 18% (FWHM) and paired coincidence time resolution (pCTR) of 384 ps to 1.1 ns was obtained for different SeSP devices at about 18 °C room temperature. However, the best time resolution was achieved at the highest over-voltage, resulting in a noise ratio of 99.08%.

Porous silicon: Synthesis and optical properties

International Nuclear Information System (INIS)

Naddaf, M.; Awad, F.

2006-01-01

Formation of porous silicon by electrochemical etching method of both p and n-type single crystal silicon wafers in HF based solutions has been performed by using three different modes. In addition to DC and pulsed voltage, a novel etching mode is developed to prepare light-emitting porous silicon by applying and holding-up a voltage in gradient steps form periodically, between the silicon wafer and a graphite electrode. Under same equivalent etching conditions, periodic gradient steps voltage etching can yield a porous silicon layer with stronger photoluminescence intensity and blue shift than the porous silicon layer prepared by DC or pulsed voltage etching. It has been found that the holding-up of the applied voltage during the etching process for defined interval of time is another significant future of this method, which highly affects the blue shift. This can be used for tailoring a porous layer with novel properties. The actual mechanism behind the blue shift is not clear exactly, even the experimental observation of atomic force microscope and purist measurements in support with quantum confinement model. It has been seen also from Fourier Transform Infrared study that interplays between O-Si-H and Si-H bond intensities play key role in deciding the efficiency of photoluminescence emission. Study of relative humidity sensing and photonic crystal properties of pours silicon samples has confirmed the advantages of the new adopted etching mode. The sensitivity at room temperature of porous silicon prepared by periodic gradient steps voltage etching was found to be about 70% as compared to 51% and 45% for the porous silicon prepared by DC and pulsed voltage etching, respectively. (author)

Porous silicon: Synthesis and optical properties

International Nuclear Information System (INIS)

Naddaf, M.; Awad, F.

2006-06-01

Formation of porous silicon by electrochemical etching method of both p and n-type single crystal silicon wafers in HF based solutions has been performed by using three different modes. In addition to DC and pulsed voltage, a novel etching mode is developed to prepare light-emitting porous silicon by applying and holding-up a voltage in gradient steps form periodically, between the silicon wafer and a graphite electrode. Under same equivalent etching conditions, periodic gradient steps voltage etching can yield a porous silicon layer with stronger photoluminescence intensity and blue shift than the porous silicon layer prepared by DC or pulsed voltage etching. It has been found that the holding-up of the applied voltage during the etching process for defined interval of time is another significant future of this method, which highly affects the blue shift. This can be used for tailoring a porous layer with novel properties. The actual mechanism behind the blue shift is not clear exactly, even the experimental observation of atomic force microscope and purist measurements in support with quantum confinement model. It has been seen also from Fourier Transform Infrared study that interplays between O-Si-H and Si-H bond intensities play key role in deciding the efficiency of photoluminescence emission. Study of relative humidity sensing and photonic crystal properties of pours silicon samples has confirmed the advantages of the new adopted etching mode. The sensitivity at room temperature of porous silicon prepared by periodic gradient steps voltage etching was found to be about 70% as compared to 51% and 45% for the porous silicon prepared by DC and pulsed voltage etching, respectively. (author)

Silicon drift detectors, present and future prospects

Science.gov (United States)

Takahashi, J.; Bellwied, R.; Beuttenmuller, R.; Caines, H.; Chen, W.; Dyke, H.; Hoffmann, G. W.; Humanic, T.; Kotov, I.; Kuczewski, P.; Leonhardt, W.; Li, Z.; Lynn, D.; Minor, R.; Munhoz, M.; Ott, G.; Pandey, S. U.; Schambach, J.; Soja, R.; Sugarbaker, E.; Willson, R. M.

2001-04-01

Silicon drift detectors provide unambiguous two-dimensional position information for charged particle detection with a single detector layer. A large area silicon drift detector was developed for the inner tracking detector of the STAR experiment at RHIC. In this paper, we discuss the lessons learned and the future prospects of this technology.

Biomolecule detection using a silicon nanoribbon: accumulation mode versus inversion mode

International Nuclear Information System (INIS)

Elfstroem, Niklas; Linnros, Jan

2008-01-01

Silicon nanoribbons were fabricated using standard optical lithography from silicon on insulator material with top silicon layer thicknesses of 100, 60 and 45 nm. Electrically these work as Schottky-barrier field-effect transistors and, depending on the substrate voltage, electron or hole injection is possible. The current through the nanoribbon is extremely sensitive to charge changes at the oxidized top surface and can be used for biomolecule detection in a liquid. We show that for detection of streptavidin molecules the response is larger in the accumulation mode than in the inversion mode, although not leading to higher detection sensitivity due to increased noise. The effect is attributed to the location in depth of the conducting channel, which for holes is closer to the screened surface charges of the biomolecules. Furthermore, the response increases for decreasing silicon thickness in both the accumulation mode and the inversion mode. The results are verified qualitatively and quantitatively through a two-dimensional simulation model on a cross section along the nanoribbon device

Silicon radiation detector analysis using back electron beam induced current

International Nuclear Information System (INIS)

Guye, R.

1987-01-01

A new technique for the observation and analysis of defects in silicon radiation detectors is described. This method uses an electron beam from a scanning electron microscope (SEM) impinging on the rear side of the p + n junction of the silicon detector, which itself is active and detects the electron beam induced current (EBIC). It is shown that this current is a sensitive probe of localized trapping centers, either at the junction surface or somewhere in the volume of the silicon crystal. (orig.)

Angle-resolved ion TOF spectrometer with a position sensitive detector

Energy Technology Data Exchange (ETDEWEB)

Saito, Norio [Electrotechnical Lab., Tsukuba, Ibaraki (Japan); Heiser, F; Wieliczec, K; Becker, U

1996-07-01

A angle-resolved ion time-of-flight mass spectrometer with a position sensitive anode has been investigated. Performance of this spectrometer has been demonstrated by measuring an angular distribution of a fragment ion pair, C{sup +} + O{sup +}, from CO at the photon energy of 287.4 eV. The obtained angular distribution is very close to the theoretically expected one. (author)

Angle-resolved diffraction grating biosensor based on porous silicon

Energy Technology Data Exchange (ETDEWEB)

Lv, Changwu; Li, Peng [School of Physical Science and Technology, Xinjiang University, Urumqi 830046 (China); Jia, Zhenhong, E-mail: jzhh@xju.edu.cn; Liu, Yajun; Mo, Jiaqing; Lv, Xiaoyi [College of Information Science and Engineering, Xinjiang University, Urumqi 830046 (China)

2016-03-07

In this study, an optical biosensor based on a porous silicon composite structure was fabricated using a simple method. This structure consists of a thin, porous silicon surface diffraction grating and a one-dimensional porous silicon photonic crystal. An angle-resolved diffraction efficiency spectrum was obtained by measuring the diffraction efficiency at a range of incident angles. The angle-resolved diffraction efficiency of the 2nd and 3rd orders was studied experimentally and theoretically. The device was sensitive to the change of refractive index in the presence of a biomolecule indicated by the shift of the diffraction efficiency spectrum. The sensitivity of this sensor was investigated through use of an 8 base pair antifreeze protein DNA hybridization. The shifts of the angle-resolved diffraction efficiency spectrum showed a relationship with the change of the refractive index, and the detection limit of the biosensor reached 41.7 nM. This optical device is highly sensitive, inexpensive, and simple to fabricate. Using shifts in diffraction efficiency spectrum to detect biological molecules has not yet been explored, so this study establishes a foundation for future work.

Optical characterization of nanocrystals in silicon rich oxide superlattices and porous silicon

International Nuclear Information System (INIS)

Agocs, E.; Petrik, P.; Milita, S.; Vanzetti, L.; Gardelis, S.; Nassiopoulou, A.G.; Pucker, G.; Balboni, R.; Fried, M.

2011-01-01

We propose to analyze ellipsometry data by using effective medium approximation (EMA) models. Thanks to EMA, having nanocrystalline reference dielectric functions and generalized critical point (GCP) model the physical parameters of two series of samples containing silicon nanocrystals, i.e. silicon rich oxide (SRO) superlattices and porous silicon layers (PSL), have been determined. The superlattices, consisting of ten SRO/SiO 2 layer pairs, have been prepared using plasma enhanced chemical vapor deposition. The porous silicon layers have been prepared using short monopulses of anodization current in the transition regime between porous silicon formation and electropolishing, in a mixture of hydrofluoric acid and ethanol. The optical modeling of both structures is similar. The effective dielectric function of the layer is calculated by EMA using nanocrystalline components (nc-Si and GCP) in a dielectric matrix (SRO) or voids (PSL). We discuss the two major problems occurring when modeling such structures: (1) the modeling of the vertically non-uniform layer structures (including the interface properties like nanoroughness at the layer boundaries) and (2) the parameterization of the dielectric function of nanocrystals. We used several techniques to reduce the large number of fit parameters of the GCP models. The obtained results are in good agreement with those obtained by X-ray diffraction and electron microscopy. We investigated the correlation of the broadening parameter and characteristic EMA components with the nanocrystal size and the sample preparation conditions, such as the annealing temperatures of the SRO superlattices and the anodization current density of the porous silicon samples. We found that the broadening parameter is a sensitive measure of the nanocrystallinity of the samples, even in cases, where the nanocrystals are too small to be visible for X-ray scattering. Major processes like sintering, phase separation, and intermixing have been

Construction and performance of silicon detectors for the small angle spectrometers of the collider detector of Fermilab

International Nuclear Information System (INIS)

Apollinari, G.; Bedeschi, F.; Bellettini, G.; Bosi, F.; Bosisio, L.; Cervelli, F.; Del Fabbro, R.; Dell'Orso, M.; Di Virgilio, A.; Focardi, E.; Giannetti, P.; Giorgi, M.; Menzione, A.; Ristori, L.; Scribano, A.; Sestini, P.; Stefanini, A.; Tonelli, G.; Zetti, F.; Bertolucci, S.; Cordelli, M.; Curatolo, M.; Dulach, B.; Esposito, B.; Giromini, P.; Miscetti, S.; Sansoni, A.

1987-01-01

The manufacturing process of a series of position sensitive silicon detectors is described together with the tests performed to optimize the performance of the detectors. The detectors are Schottky diodes with strips on the ohmic contact which allow to determine the position of the incoming ionizing particles by charge partition. Four detectors were assembled in a telescope and tested inside the vacuum pipe of the Tevatron Collider at Fermilab. The system is a prototype of the Small Angle Silicon Spectrometer, designed primarily to study p-anti p elastic and diffractive cross sections, and is a part of the Collider Detector of Fermilab (CDF). Several tests were performed to check the efficiency and the linearity of response of various regions of the detectors. Scans of the beam halo were also done in high and low β optics to check how close to the beam the detectors could be operated. Finally, the dependence of the detector response on temperature and integrated radiation dose was investigated. (orig.)

Vibrational modes of porous silicon

International Nuclear Information System (INIS)

Sabra, M.; Naddaf, M.

2012-01-01

On the basis of theoretical and experimental investigations, the origin of room temperature photoluminescence (PL) from porous silicon is found to related to chemical complexes constituted the surface, in particular, SiHx, SiOx and SiOH groups. Ab initio atomic and molecular electronic structure calculations on select siloxane compounds were used for imitation of infrared (IR) spectra of porous silicon. These are compared to the IR spectra of porous silicon recorded by using Fourier Transform Infrared Spectroscopy (FTIR). In contrast to linear siloxane, the suggested circular siloxane terminated with linear siloxane structure is found to well-imitate the experimental spectra. These results are augmented with EDX (energy dispersive x-ray spectroscopy) measurements, which showed that the increase of SiOx content in porous silicon due to rapid oxidation process results in considerable decrease in PL peak intensity and a blue shift in the peak position. (author)

Fabrication of a novel silicon single electron transistor for Si:P quantum computer devices

International Nuclear Information System (INIS)

Angus, S.J.; Smith, C.E.A.; Gauja, E.; Dzurak, A.S.; Clark, R.G.; Snider, G.L.

2004-01-01

Full text: Quantum computation relies on the successful measurement of quantum states. Single electron transistors (SETs) are known to be able to perform fast and sensitive charge measurements of solid state qubits. However, due to their sensitivity, SETs are also very susceptible to random charge fluctuations in a solid-state materials environment. In previous dc transport measurements, silicon-based SETs have demonstrated greater charge stability than A1/A1 2 O 3 SETs. We have designed and fabricated a novel silicon SET architecture for a comparison of the noise characteristics of silicon and aluminium based devices. The silicon SET described here is designed for controllable and reproducible low temperature operation. It is fabricated using a novel dual gate structure on a silicon-on-insulator substrate. A silicon quantum wire is formed in a 100nm thick high-resistivity superficial silicon layer using reactive ion etching. Carriers are induced in the silicon wire by a back gate in the silicon substrate. The tunnel barriers are created electrostatically, using lithographically defined metallic electrodes (∼40nm width). These tunnel barriers surround the surface of the quantum wire, thus producing excellent electrostatic confinement. This architecture provides independent control of tunnel barrier height and island occupancy, thus promising better control of Coulomb blockade oscillations than in previously investigated silicon SETs. The use of a near intrinsic silicon substrate offers compatibility with Si:P qubits in the longer term

A hybrid tandem solar cell based on hydrogenated amorphous silicon and dye-sensitized TiO{sub 2} film

Energy Technology Data Exchange (ETDEWEB)

Hao Sancun [Institute of Materials Physical Chemistry, Huaqiao University, Quanzhou, 362021 (China); Institute of Photo-Electronics of Nankai University, Tianjin 300071 (China); Jiangsu Shuangdeng Group Co. Ltd, Thaizhou, Jiangsu, 225526 (China); Wu Jihuai, E-mail: jhwu@hqu.edu.cn [Institute of Materials Physical Chemistry, Huaqiao University, Quanzhou, 362021 (China); Sun Zhonglin [Institute of Photo-Electronics of Nankai University, Tianjin 300071 (China)

2012-01-01

Hydrogenated amorphous silicon film (a-Si:H) as top cell is introduced to dye-sensitized titanium dioxide nanocrystalline solar cell (DSSC) as bottom cell to assemble a hybrid tandem solar cell. The hybrid tandem solar cell fabricated with the thicknesses a-Si:H layer of 235 nm, ZnO/Pt interlayer of 100 nm and DSSC layer of 8.5 {mu}m achieves a photo-to-electric energy conversion efficiency of 8.31%, a short circuit current density of 10.61 mA{center_dot}cm{sup -2} and an open-circuit voltage of 1.45 V under a simulated solar light irradiation of 100 mW{center_dot}cm{sup -2}.

Grounding, Shielding and Power Distribution for the LHCb Silicon Tracking

CERN Document Server

Bauer, C; Frei, R; Straumann, U; Vázquez, P; Vollhardt, A

2005-01-01

This note lists the relevant items for power and grounding, it explains the sensitive detector input signal circuits and describes the grounding, power distribution and line filtering measures applied to each of the electrical units of the LHCb silicon tracking system. This note deals with both silicon sub-projects, the Inner Tracker (IT) and the Trigger Tracker (TT).

Quantitative study of the transmission of axially channeled protons in thin silicon crystals

International Nuclear Information System (INIS)

Rosner, J.S.; Gibson, W.M.; Golovchenko, J.A.; Goland, A.N.; Wegner, H.E.

1978-01-01

The azimuthal distributions of protons transmitted through thin silicon single crystals near the axis were measured using a two-dimensional position-sensitive detector. The data are composed of ringlike distributions with strong azimuthal and transverse energy dependence. The azimuthal distributions are compared with theoretical predictions based on the random string approximation using different forms of the interatomic potential. ''Blocking'' in the transverse plane is also observed. In addition, from an analysis of the radial spreading of the distribution the effects of inelastic scattering in the transverse plane are clearly seen

Improvements to a neutral radiation detection and position sensitive process and devices

International Nuclear Information System (INIS)

Charpak, Georges; Nguyen, N.H.; Policarpo, Armando.

1977-01-01

This invention aims to provide a neutral radiation position sensitive process and device providing a spatial radiation satisfactory for most medical applications and an energy radiation that cannot be reached by gas detectors based on proportional counters or by scintillation counters. Only solid state detectors can compete with respect to energy resolution. The detector described enables large areas to be covered which cannot be reached at accessible costs by solid state detectors. With this aim in view, the invention suggests an incident neutral radiation and position sensitive process, particularly soft gamma and X radiations, whereby photoelectrons are made to form by incident radiation action on gas atoms contained in an enclosure. By means of an electric field, the electrons are diverted towards a space undergoing an electric field high enough in value to create photons by exciting gas atoms and returning them to the de-excited state. The photons are collected, through a transparent window, on a layer of a material for converting such photons into scintillations in the near or visible UV spectrum and the barycentre of the scintillations is positioned on the layer, for instance by photomultipliers or ionization detectors. According to another aspect of the invention, it suggests a detection and position sensitive device comprising (generally downstream of a collimator with a grid of inlet holes) a leak tight containment fitted with an inlet window transparent to incident radiations, filled with a gas producing electrons by interaction with the incident radiation, and fitted with electrodes for generating an electric field to divert the electrons to a space for creating secondary photons [fr

Oblique patterned etching of vertical silicon sidewalls

Science.gov (United States)

Bruce Burckel, D.; Finnegan, Patrick S.; David Henry, M.; Resnick, Paul J.; Jarecki, Robert L.

2016-04-01

A method for patterning on vertical silicon surfaces in high aspect ratio silicon topography is presented. A Faraday cage is used to direct energetic reactive ions obliquely through a patterned suspended membrane positioned over the topography. The technique is capable of forming high-fidelity pattern (100 nm) features, adding an additional fabrication capability to standard top-down fabrication approaches.

Iron solubility in highly boron-doped silicon

International Nuclear Information System (INIS)

McHugo, S.A.; McDonald, R.J.; Smith, A.R.; Hurley, D.L.; Weber, E.R.

1998-01-01

We have directly measured the solubility of iron in high and low boron-doped silicon using instrumental neutron activation analysis. Iron solubilities were measured at 800, 900, 1000, and 1100thinsp degree C in silicon doped with either 1.5x10 19 or 6.5x10 14 thinspboronthinspatoms/cm 3 . We have measured a greater iron solubility in high boron-doped silicon as compared to low boron-doped silicon, however, the degree of enhancement is lower than anticipated at temperatures >800thinsp degree C. The decreased enhancement is explained by a shift in the iron donor energy level towards the valence band at elevated temperatures. Based on this data, we have calculated the position of the iron donor level in the silicon band gap at elevated temperatures. We incorporate the iron energy level shift in calculations of iron solubility in silicon over a wide range of temperatures and boron-doping levels, providing a means to accurately predict iron segregation between high and low boron-doped silicon. copyright 1998 American Institute of Physics

Application of position-sensitive detectors to positron imaging

International Nuclear Information System (INIS)

Yamashita, Takaji; Uchida, Hiroshi; Watanabe, Mitsuo; Omura, Tomohide

1994-01-01

Positron imaging including positron emission tomography (PET) is expected to be a promising tool for basic and clinical research, because it makes possible the study of regional chemistry within multiple organs of the body in living human beings and experimental animals. New schemes of high resolution block detectors have been developed to improve the performance of positron imaging systems, which employ small segments of bismuth germanate (BGO) arrays and position-sensitive photomultiplier tubes (PS-PMT). The coincidence detector resolution of less than 2.0 mm in full width at half maximum was achieved with the detectors, which is very close to the theoretical resolution limit in positron imaging. (author)

Performance studies of X3 silicon detectors for the future ELISSA array at ELI-NP

Science.gov (United States)

Chesnevskaya, S.; Balabanski, D. L.; Choudhury, D.; Constantin, P.; Filipescu, D. M.; Ghita, D. G.; Guardo, G. L.; Lattuada, D.; Matei, C.; Rotaru, A.; State, A.

2018-05-01

ELISSA is an array of silicon strip detectors under construction at the ELI-NP facility for measurements of photodissociation reactions using high-brilliance, quasi monoenergetic gamma beams. The detection system consists of 35 single-sided position-sensitive X3 detectors arranged in a cylindrical configuration and eight QQQ3 detectors as end-caps. A batch of forty X3 detectors have been tested at ELI-NP. The energy and position resolution, ballistic deficit, leakage currents, and depletion voltage were measured and analyzed. Measurements of the energy resolution were carried out using two read-out electronic chains, one based on multichannel preamplifiers and another based on multiplexers.

Fabrication of detectors and transistors on high-resistivity silicon

International Nuclear Information System (INIS)

Holland, S.

1988-06-01

A new process for the fabrication of silicon p-i-n diode radiation detectors is described. The utilization of backside gettering in the fabrication process results in the actual physical removal of detrimental impurities from critical device regions. This reduces the sensitivity of detector properties to processing variables while yielding low diode reverse-leakage currents. In addition, gettering permits the use of processing temperatures compatible with integrated-circuit fabrication. P-channel MOSFETs and silicon p-i-n diodes have been fabricated simultaneously on 10 kΩ/centerreverse arrowdot/cm silicon using conventional integrated-circuit processing techniques. 25 refs., 5 figs

Coaxial-structured ZnO/silicon nanowires extended-gate field-effect transistor as pH sensor

International Nuclear Information System (INIS)

Li, Hung-Hsien; Yang, Chi-En; Kei, Chi-Chung; Su, Chung-Yi; Dai, Wei-Syuan; Tseng, Jung-Kuei; Yang, Po-Yu; Chou, Jung-Chuan; Cheng, Huang-Chung

2013-01-01

An extended-gate field-effect transistor (EGFET) of coaxial-structured ZnO/silicon nanowires as pH sensor was demonstrated in this paper. The oriented 1-μm-long silicon nanowires with the diameter of about 50 nm were vertically synthesized by the electroless metal deposition method at room temperature and were sequentially capped with the ZnO films using atomic layer deposition at 50 °C. The transfer characteristics (I DS –V REF ) of such ZnO/silicon nanowire EGFET sensor exhibited the sensitivity and linearity of 46.25 mV/pH and 0.9902, respectively for the different pH solutions (pH 1–pH 13). In contrast to the ZnO thin-film ones, the ZnO/silicon nanowire EGFET sensor achieved much better sensitivity and superior linearity. It was attributed to a high surface-to-volume ratio of the nanowire structures, reflecting a larger effective sensing area. The output voltage and time characteristics were also measured to indicate good reliability and durability for the ZnO/silicon nanowires sensor. Furthermore, the hysteresis was 9.74 mV after the solution was changed as pH 7 → pH 3 → pH 7 → pH 11 → pH 7. - Highlights: ► Coaxial-structured ZnO/silicon nanowire EGFET was demonstrated as pH sensor. ► EMD and ALD methods were proposed to fabricate ZnO/silicon nanowires. ► ZnO/silicon nanowire EGFET sensor achieved better sensitivity and linearity. ► ZnO/silicon nanowire EGFET sensor had good reliability and durability

Coplanar-grid CdZnTe detector with three-dimensional position sensitivity

International Nuclear Information System (INIS)

Luke, P.N.; Amman, M.; Lee, J.S.; Yaver, H.

1998-06-01

A 3-dimensional position-sensitive coplanar-grid detector design for use with compound semiconductors is described. This detector design maintains the advantage of a coplanar-grid detector in which good energy resolution can be obtained from materials with poor charge transport. Position readout in two dimensions is accomplished using proximity-sensing electrodes adjacent to the electron-collecting grid electrode of the detector. Additionally, depth information is obtained by taking the ratio of the amplitudes of the collecting grid signal and the cathode signal. Experimental results from a prototype CdZnTe detector are presented

Impurities of oxygen in silicon

International Nuclear Information System (INIS)

Gomes, V.M.S.

1985-01-01

The electronic structure of oxygen complex defects in silicon, using molecular cluster model with saturation by watson sphere into the formalism of Xα multiple scattering method is studied. A systematic study of the simulation of perfect silicon crystal and an analysis of the increasing of atom number in the clusters are done to choose the suitable cluster for the calculations. The divacancy in three charge states (Si:V 2 + , Si:V 2 0 , Si:V 2 - ), of the oxygen pair (Si:O 2 ) and the oxygen-vacancy pair (Si:O.V) neighbours in the silicon lattice, is studied. Distortions for the symmetry were included in the Si:V 2 + and Si:O 2 systems. The behavior of defect levels related to the cluster size of Si:V 2 0 and Si:O 2 systems, the insulated oxygen impurity of silicon in interstitial position (Si:O i ), and the complexes involving four oxygen atoms are analysed. (M.C.K.) [pt

Rationally designed porous silicon as platform for optical biosensors

International Nuclear Information System (INIS)

Priano, G.; Acquaroli, L.N.; Lasave, L.C.; Battaglini, F.; Arce, R.D.; Koropecki, R.R.

2012-01-01

Optical porous silicon multilayer structures are able to work as sensitive chemical sensors or biosensors based in their optical response. An algorithm to simulate the optical response of these multilayers was developed, considering the optical properties of the individual layers. The algorithm allows designing and customizing the porous silicon structures according to a given application. The results obtained by the simulation were experimentally verified; for this purpose different photonic structures were prepared, such as Bragg reflectors and microcavities. Some of these structures have been derivatized by the introduction of aminosilane groups on the porous silicon surface. The algorithm also permits to simulate the effects produced by a non uniform derivatization of the multilayer. - Highlights: ► Mesoporous silicon structure ► Functionalization of mesoporous silicon as sensors ► Design of the one-dimensional photonic crystal ► Simulation of non-uniformity in covering the sensor structure

10 μ m-thick four-quadrant transmissive silicon photodiodes for beam position monitor application: electrical characterization and gamma irradiation effects

Science.gov (United States)

Rafí, J. M.; Pellegrini, G.; Quirion, D.; Hidalgo, S.; Godignon, P.; Matilla, O.; Juanhuix, J.; Fontserè, A.; Molas, B.; Pothin, D.; Fajardo, P.

2017-01-01

Silicon photodiodes are very useful devices as X-ray beam monitors in synchrotron radiation beamlines. Owing to Si absorption, devices thinner than 10 μ m are needed to achieve transmission over 90% for energies above 10 keV . In this work, new segmented four-quadrant diodes for beam alignment purposes are fabricated on both ultrathin (10 μ m-thick) and bulk silicon substrates. Four-quadrant diodes implementing different design parameters as well as auxiliary test structures (single diodes and MOS capacitors) are studied. An extensive electrical characterization, including current-voltage (I-V) and capacitance-voltage (C-V) techniques, is carried out on non-irradiated and gamma-irradiated devices up to 100 Mrad doses. Special attention is devoted to the study of radiation-induced charge build-up in diode interquadrant isolation dielectric, as well as its impact on device interquadrant resistance. Finally, the devices have been characterized with an 8 keV laboratory X-ray source at 108 ph/s and in BL13-XALOC ALBA Synchroton beamline with 1011 ph/s and energies from 6 to 16 keV . Sensitivity, spatial resolution and uniformity of the devices have been evaluated.

A new position-sensitive detector for thermal and epithermal neutrons

International Nuclear Information System (INIS)

Jeavons, A.P.; Ford, N.L.; Lindberg, B.; Sachot, R.

1977-01-01

A new two-dimensional position-sensitive neutron detector is described. It is based on (n,γ) neutron resonance capture in a foil with subsequent detection of internal conversion electrons with a high-density proportional chamber. Large-area detectors with a 1 mm spatial resolution are feasible. A detection efficiency of 50% is possible for thermal neutrons using gadolinium-157 foil and for epithermal neutrons using hafnium-177. (Auth.)

System-level integration of active silicon photonic biosensors

Science.gov (United States)

Laplatine, L.; Al'Mrayat, O.; Luan, E.; Fang, C.; Rezaiezadeh, S.; Ratner, D. M.; Cheung, K.; Dattner, Y.; Chrostowski, L.

2017-02-01

Biosensors based on silicon photonic integrated circuits have attracted a growing interest in recent years. The use of sub-micron silicon waveguides to propagate near-infrared light allows for the drastic reduction of the optical system size, while increasing its complexity and sensitivity. Using silicon as the propagating medium also leverages the fabrication capabilities of CMOS foundries, which offer low-cost mass production. Researchers have deeply investigated photonic sensor devices, such as ring resonators, interferometers and photonic crystals, but the practical integration of silicon photonic biochips as part of a complete system has received less attention. Herein, we present a practical system-level architecture which can be employed to integrate the aforementioned photonic biosensors. We describe a system based on 1 mm2 dies that integrate germanium photodetectors and a single light coupling device. The die are embedded into a 16x16 mm2 epoxy package to enable microfluidic and electrical integration. First, we demonstrate a simple process to mimic Fan-Out Wafer-level-Packaging, which enables low-cost mass production. We then characterize the photodetectors in the photovoltaic mode, which exhibit high sensitivity at low optical power. Finally, we present a new grating coupler concept to relax the lateral alignment tolerance down to +/- 50 μm at 1-dB (80%) power penalty, which should permit non-experts to use the biochips in a"plug-and-play" style. The system-level integration demonstrated in this study paves the way towards the mass production of low-cost and highly sensitive biosensors, and can facilitate their wide adoption for biomedical and agro-environmental applications.

Note: Anodic bonding with cooling of heat-sensitive areas

DEFF Research Database (Denmark)

Vesborg, Peter Christian Kjærgaard; Olsen, Jakob Lind; Henriksen, Toke Riishøj

2010-01-01

Anodic bonding of silicon to glass always involves heating the glass and device to high temperatures so that cations become mobile in the electric field. We present a simple way of bonding thin silicon samples to borosilicate glass by means of heating from the glass side while locally cooling hea......-sensitive areas from the silicon side. Despite the high thermal conductivity of silicon, this method allows a strong anodic bond to form just millimeters away from areas essentially at room temperature....

Fast readout of scintillating fibres using position-sensitive photomultipliers

International Nuclear Information System (INIS)

Agoritsas, V.; Akchurin, N.; Bergdolt, A.M.; Bing, O.; Bravar, A.; Ditta, J.; Dufournaud, J.; Dyachenko, V.A.; Giacomich, R.; Gorin, A.M.; Kuroda, K.; Magaudda, D.; Newsom, C.; Okada, K.; Onel, Y.; Penzo, A.; Rakhmatov, V.Ye.; Rykalin, V.I.; Salvato, G.; Savin, A.A.; Schiavon, P.; Sillou, D.; Solovyov, Yu.A.; Takeutchi, F.; Tareb-Reyes, M.; Vasilchenko, V.G.; Yoshida, T.; Zaychenko, A.A.

1994-01-01

Major progress has recently been achieved in the fast readout of scintillating fibres using position-sensitive photomultipliers (PSPMs). Experimental results obtained with commercially available PSPMs already show a space resolution better than 200 μm, a time resolution of about 1.5 ns with a detection efficiency higher than 90%, and the possibility of separating double hits with a minimum distance of ∼3 mm. An upgrade of PSPMs based on new dynode structures is also in progress. Results obtained with one new PSPM prototype in a magnetic field are also presented. (orig.)

Micromachined silicon seismic accelerometer development

Energy Technology Data Exchange (ETDEWEB)

Barron, C.C.; Fleming, J.G.; Montague, S. [and others

1996-08-01

Batch-fabricated silicon seismic transducers could revolutionize the discipline of seismic monitoring by providing inexpensive, easily deployable sensor arrays. Our ultimate goal is to fabricate seismic sensors with sensitivity and noise performance comparable to short-period seismometers in common use. We expect several phases of development will be required to accomplish that level of performance. Traditional silicon micromachining techniques are not ideally suited to the simultaneous fabrication of a large proof mass and soft suspension, such as one needs to achieve the extreme sensitivities required for seismic measurements. We have therefore developed a novel {open_quotes}mold{close_quotes} micromachining technology that promises to make larger proof masses (in the 1-10 mg range) possible. We have successfully integrated this micromolding capability with our surface-micromachining process, which enables the formation of soft suspension springs. Our calculations indicate that devices made in this new integrated technology will resolve down to at least sub-{mu}G signals, and may even approach the 10{sup -10} G/{radical}Hz acceleration levels found in the low-earth-noise model.

High sensitivity detection and characterization of the chemical state of trace element contamination on silicon wafers

CERN Document Server

Pianetta, Piero A; Baur, K; Brennan, S; Homma, T; Kubo, N

2003-01-01

Increasing the speed and complexity of semiconductor integrated circuits requires advanced processes that put extreme constraints on the level of metal contamination allowed on the surfaces of silicon wafers. Such contamination degrades the performance of the ultrathin SiO sub 2 gate dielectrics that form the heart of the individual transistors. Ultimately, reliability and yield are reduced to levels that must be improved before new processes can be put into production. It should be noted that much of this metal contamination occurs during the wet chemical etching and rinsing steps required for the manufacture of integrated circuits and industry is actively developing new processes that have already brought the metal contamination to levels beyond the measurement capabilities of conventional analytical techniques. The measurement of these extremely low contamination levels has required the use of synchrotron radiation total reflection X-ray fluorescence (SR-TXRF) where sensitivities 100 times better than conv...

Microtextured Silicon Surfaces for Detectors, Sensors & Photovoltaics

Energy Technology Data Exchange (ETDEWEB)

Carey, JE; Mazur, E

2005-05-19

With support from this award we studied a novel silicon microtexturing process and its application in silicon-based infrared photodetectors. By irradiating the surface of a silicon wafer with intense femtosecond laser pulses in the presence of certain gases or liquids, the originally shiny, flat surface is transformed into a dark array of microstructures. The resulting microtextured surface has near-unity absorption from near-ultraviolet to infrared wavelengths well below the band gap. The high, broad absorption of microtextured silicon could enable the production of silicon-based photodiodes for use as inexpensive, room-temperature multi-spectral photodetectors. Such detectors would find use in numerous applications including environmental sensors, solar energy, and infrared imaging. The goals of this study were to learn about microtextured surfaces and then develop and test prototype silicon detectors for the visible and infrared. We were extremely successful in achieving our goals. During the first two years of this award, we learned a great deal about how microtextured surfaces form and what leads to their remarkable optical properties. We used this knowledge to build prototype detectors with high sensitivity in both the visible and in the near-infrared. We obtained room-temperature responsivities as high as 100 A/W at 1064 nm, two orders of magnitude higher than standard silicon photodiodes. For wavelengths below the band gap, we obtained responsivities as high as 50 mA/W at 1330 nm and 35 mA/W at 1550 nm, close to the responsivity of InGaAs photodiodes and five orders of magnitude higher than silicon devices in this wavelength region.

A rotation-symmetric, position-sensitive annular detector for maximum counting rates

International Nuclear Information System (INIS)

Igel, S.

1993-12-01

The Germanium Wall is a semiconductor detector system containing up to four annular position sensitive ΔE-detectors from high purity germanium (HPGe) planned to complement the BIG KARL spectrometer in COSY experiments. The first diode of the system, the Quirl-detector, has a two dimensional position sensitive structure defined by 200 Archimedes' spirals on each side with opposite orientation. In this way about 40000 pixels are defined. Since each spiral element detects almost the same number of events in an experiment the whole system can be optimized for maximal counting rates. This paper describes a test setup for a first prototype of the Quirl-detector and the results of test measurements with an α-source. The detector current and the electrical separation of the spiral elements were measured. The splitting of signals due to the spread of charge carriers produced by an incident ionizing particle on several adjacent elements was investigated in detail and found to be twice as high as expected from calculations. Its influence on energy and position resolution is discussed. Electronic crosstalk via signal wires and the influence of noise from the magnetic spectrometer has been tested under experimental conditions. Additionally, vacuum feedthroughs based on printed Kapton foils pressed between Viton seals were fabricated and tested successfully concerning their vacuum and thermal properties. (orig.)

Position sensitive proportional counter for measurement of tritium labelled gas movement

International Nuclear Information System (INIS)

Mori, Chizuo; Nakamoto, Makihiko; Uritani, Akira; Watanabe, Tamaki

1984-01-01

A position sensitive proportional counter of a charge division type with a single resistive anode wire was constructed for the measurement of the movement of 3 H labelled gas which is flowing or diffusing in a pipe. The introduction of resistors between the anode wire and pre-amplifiers brought a uniform detection efficiency for 3 H β-rays throughout the counter. The position resolution was 3.1 mm FWHM. Detection efficiency was almost 100% uniformly over about 700 mm in the total anode length of 740 mm. The movement of 3 H labelled gas could be measured effectively. (author)

High speed USB data logger for position sensitive detector data acquisition

International Nuclear Information System (INIS)

Poudel, S.K.; Kulkarni, V.B.; Kumar, Santosh; Chandak, R.M.; Krishna, P.S.R.; Mukhopadhyay, R.

2010-01-01

Ratio ADC (RDC) module used in neutron Position Sensitive Detector (PSD) data acquisition, gives digital code signifying the position of neutron event. A High Speed USB based RDC Data Logger card has been made for logging data from multiple RDCs to PC. A CPLD on the card continuously polls the RDCs for data, and fills it in the FIFO memory of a high speed USB microcontroller. A VC++ program for neutron scattering experiments reads event codes from FIFO of microcontroller and builds spectrum on PC. This program sweeps physical parameters of sample and collects PSD data for pre-determined monitor counts. (author)

Photoluminescence and electrical properties of silicon oxide and silicon nitride superlattices containing silicon nanocrystals

International Nuclear Information System (INIS)

Shuleiko, D V; Ilin, A S

2016-01-01

Photoluminescence and electrical properties of superlattices with thin (1 to 5 nm) alternating silicon-rich silicon oxide or silicon-rich silicon nitride, and silicon oxide or silicon nitride layers containing silicon nanocrystals prepared by plasma-enhanced chemical vapor deposition with subsequent annealing were investigated. The entirely silicon oxide based superlattices demonstrated photoluminescence peak shift due to quantum confinement effect. Electrical measurements showed the hysteresis effect in the vicinity of zero voltage due to structural features of the superlattices from SiOa 93 /Si 3 N 4 and SiN 0 . 8 /Si 3 N 4 layers. The entirely silicon nitride based samples demonstrated resistive switching effect, comprising an abrupt conductivity change at about 5 to 6 V with current-voltage characteristic hysteresis. The samples also demonstrated efficient photoluminescence with maximum at ∼1.4 eV, due to exiton recombination in silicon nanocrystals. (paper)

Influence of external effects on the electron silicon properties

International Nuclear Information System (INIS)

Orazgulyev, B.; Bigozha, O.D.

2005-01-01

It is noted, that study of angular dependence of longitudinal piezo-resistance of n-type silicon presents the both scientific and practical interest because the obtained data could serve the ground for creating a high-sensitive piezo-sensors. Measurement of angular dependence allows objectively estimate the errors of anisotropy parameter determination, constant of deformation potential caused of mistakes in maintenance of crystallographic directions during the samples production process. In the case of X||J||[111] at one-axis deformation a new kind of piezo-effect in electron silicon is revealed. It is explained by transformation of iso-energy rotation ellipsoid into three-axis ellipsoid at presence of shear silicon crystal deformation

Rationally designed porous silicon as platform for optical biosensors

Energy Technology Data Exchange (ETDEWEB)

Priano, G. [INQUIMAE, DQIAyQF, FCEN, Universidad de Buenos Aires, Ciudad Universitaria, Pabellon 2 (C1428EHA) Buenos Aires (Argentina); Acquaroli, L.N.; Lasave, L.C. [Instituto De Desarrollo Tecnologico Para La Industria Quimica, UNL, CONICET, Gueemes 3450 (S3000GLN) Santa Fe (Argentina); Battaglini, F. [INQUIMAE, DQIAyQF, FCEN, Universidad de Buenos Aires, Ciudad Universitaria, Pabellon 2 (C1428EHA) Buenos Aires (Argentina); Arce, R.D., E-mail: rarce@intec.unl.edu.ar [Instituto De Desarrollo Tecnologico Para La Industria Quimica, UNL, CONICET, Gueemes 3450 (S3000GLN) Santa Fe (Argentina); Departamento De Materiales, Facultad De Ingenieria Quimica, UNL, Santiago del Estero 2829 (S3000) Santa Fe (Argentina); Koropecki, R.R. [Instituto De Desarrollo Tecnologico Para La Industria Quimica, UNL, CONICET, Gueemes 3450 (S3000GLN) Santa Fe (Argentina); Departamento De Materiales, Facultad De Ingenieria Quimica, UNL, Santiago del Estero 2829 (S3000) Santa Fe (Argentina)

2012-08-01

Optical porous silicon multilayer structures are able to work as sensitive chemical sensors or biosensors based in their optical response. An algorithm to simulate the optical response of these multilayers was developed, considering the optical properties of the individual layers. The algorithm allows designing and customizing the porous silicon structures according to a given application. The results obtained by the simulation were experimentally verified; for this purpose different photonic structures were prepared, such as Bragg reflectors and microcavities. Some of these structures have been derivatized by the introduction of aminosilane groups on the porous silicon surface. The algorithm also permits to simulate the effects produced by a non uniform derivatization of the multilayer. - Highlights: Black-Right-Pointing-Pointer Mesoporous silicon structure Black-Right-Pointing-Pointer Functionalization of mesoporous silicon as sensors Black-Right-Pointing-Pointer Design of the one-dimensional photonic crystal Black-Right-Pointing-Pointer Simulation of non-uniformity in covering the sensor structure.

CALICE silicon-tungsten electromagnetic calorimeter

Indian Academy of Sciences (India)

A highly granular electromagnetic calorimeter prototype based on tungsten absorber and sampling units equipped with silicon pads as sensitive devices for signal collection is under construction. The full prototype will have in total 30 layers and be read out by about 10000 Si cells of 1 × 1 cm2. A first module consisting of 14 ...

Position sensitive X-ray or X-ray detector and 3-D-tomography using same

International Nuclear Information System (INIS)

1975-01-01

A fan-shaped beam of penetrating radiation, such as X-ray or γ-ray radiation, is directed through a slice of the body to be analyzed into a position sensitive detector for deriving a shadowgraph of transmission or absorption of the penetrating radiation by the body. A number of such shadowgraphs are obtained for different angles of rotation of the fan-shaped beam relative to the center of the slice being analyzed. The detected fan beam shadowgraph data is reordered into shadowgraph data corresponding to sets of parallel paths of radiation through the body. The reordered parallel path shadowgraph data is then convoluted in accordance with a 3-D reconstruction method by convolution in a computer to derive a 3-D reconstructed tomograph of the body under analysis. In a preferred embodiment, the position sensitive detector comprises a multiwire detector wherein the wires are arrayed parallel to the direction of the divergent penetrating rays to be detected. A focussed grid collimator is interposed between the body and the position sensitive detector for collimating the penetrating rays to be detected. The source of penetrating radiation is preferably a monochromatic source

Dietary Silicon Intake of Korean Young Adult Males and Its Relation to their Bone Status.

Science.gov (United States)

Choi, Mi-Kyeong; Kim, Mi-Hyun

2017-03-01

Accumulated data suggests a positive effect of silicon on bone health; however, limited research exists on the silicon content of foods. To further the understanding of the relationship between dietary silicon intake and bone health, a food composition database of commonly consumed foods in Korea is required. For quantitative data on the intake levels of silicon, we analyzed the silicon content of 365 food items commonly consumed in Korea using inductively coupled plasma-atomic emission spectrometry following microwave-assisted digestion. To investigate the dietary silicon intake status and to examine the potential role of dietary silicon intake in the bone status of men, a total of 400 healthy Korean adult males aged 19-25 were observed for their diet intake and calcaneus bone density using the 24-h recall method and quantitative ultrasound, respectively. Clinical markers reflecting bone metabolism such as serum total alkaline phosphatase, N-mid osteocalcin, and type 1 collagen C-terminal telopeptide concentrations were also analyzed. Silicon intake of the subjects was estimated as 37.5 ± 22.2 mg/day. Major food sources of dietary silicon in the Korean male were cereal and cereal products (25.6 % of total silicon intake), vegetables (22.7 %), beverages and liquors (21.2 %), and milk and milk products (7.0 %). Silicon intake correlated positively with age, weight, energy intake, protein intake, calcium intake, and alcohol intake. After adjusted for age, weight, energy intake, protein intake, calcium intake, alcohol intake, smoking cigarettes, and regular exercise status, daily total silicon intake had no correlation with calcaneus bone density and the bone metabolism markers, but silicon intake from vegetables had a positive correlation with serum total alkaline phosphatase activity, a bone formation maker. These findings show the possible positive relationship between dietary silicon intake from vegetables and the bone formation of young adult males. Further

Intra-prosthetic breast MR virtual navigation: a preliminary study for a new evaluation of silicone breast implants.

Science.gov (United States)

Moschetta, Marco; Telegrafo, Michele; Capuano, Giulia; Rella, Leonarda; Scardapane, Arnaldo; Angelelli, Giuseppe; Stabile Ianora, Amato Antonio

2013-10-01

To assess the contribute of intra-prosthetic MRI virtual navigation for evaluating breast implants and detecting implant ruptures. Forty-five breast implants were evaluated by MR examination. Only patients with a clinical indication were assessed. A 1.5-T device equipped with a 4-channel breast coil was used by performing axial TSE-T2, axial silicone-only, axial silicone suppression and sagittal STIR images. The obtained dicom files were also analyzed by using virtual navigation software. Two blinded radiologists evaluated all MR and virtual images. Eight patients for a total of 13 implants underwent surgical replacement. Sensitivity, specificity, accuracy, positive predictive value (PPV) and negative predictive value (NPV) were calculated for both imaging strategies. Intra-capsular rupture was diagnosed in 13 out of 45 (29%) implants by using MRI. Basing on virtual navigation, 9 (20%) cases of intra-capsular rupture were diagnosed. Sensitivity, specificity, accuracy, PPV and NPV values of 100%, 86%, 89%, 62% and 100%, respectively, were found for MRI. Virtual navigation increased the previous values up to 100%, 97%, 98%, 89% and 100%. Intra-prosthetic breast MR virtual navigation can represent an additional promising tool for the evaluation of breast implants being able to reduce false positives and to provide a more accurate detection of intra-capsular implant rupture signs. Copyright © 2013 Elsevier Inc. All rights reserved.

Multimodality Imaging-based Evaluation of Single-Lumen Silicone Breast Implants for Rupture.

Science.gov (United States)

Seiler, Stephen J; Sharma, Pooja B; Hayes, Jody C; Ganti, Ramapriya; Mootz, Ann R; Eads, Emily D; Teotia, Sumeet S; Evans, W Phil

2017-01-01

Breast implants are frequently encountered on breast imaging studies, and it is essential for any radiologist interpreting these studies to be able to correctly assess implant integrity. Ruptures of silicone gel-filled implants often occur without becoming clinically obvious and are incidentally detected at imaging. Early diagnosis of implant rupture is important because surgical removal of extracapsular silicone in the breast parenchyma and lymphatics is difficult. Conversely, misdiagnosis of rupture may prompt a patient to undergo unnecessary additional surgery to remove the implant. Mammography is the most common breast imaging examination performed and can readily depict extracapsular free silicone, although it is insensitive for detection of intracapsular implant rupture. Ultrasonography (US) can be used to assess the internal structure of the implant and may provide an economical method for initial implant assessment. Common US signs of intracapsular rupture include the "keyhole" or "noose" sign, subcapsular line sign, and "stepladder" sign; extracapsular silicone has a distinctive "snowstorm" or echogenic noise appearance. Magnetic resonance (MR) imaging is the most accurate and reliable means for assessment of implant rupture and is highly sensitive for detection of both intracapsular and extracapsular rupture. MR imaging findings of intracapsular rupture include the keyhole or noose sign, subcapsular line sign, and "linguine" sign, and silicone-selective MR imaging sequences are highly sensitive to small amounts of extracapsular silicone. © RSNA, 2017.

Copper-assisted, anti-reflection etching of silicon surfaces

Science.gov (United States)

Toor, Fatima; Branz, Howard

2014-08-26

A method (300) for etching a silicon surface (116) to reduce reflectivity. The method (300) includes electroless deposition of copper nanoparticles about 20 nanometers in size on the silicon surface (116), with a particle-to-particle spacing of 3 to 8 nanometers. The method (300) includes positioning (310) the substrate (112) with a silicon surface (116) into a vessel (122). The vessel (122) is filled (340) with a volume of an etching solution (124) so as to cover the silicon surface (116). The etching solution (124) includes an oxidant-etchant solution (146), e.g., an aqueous solution of hydrofluoric acid and hydrogen peroxide. The silicon surface (116) is etched (350) by agitating the etching solution (124) with, for example, ultrasonic agitation, and the etching may include heating (360) the etching solution (124) and directing light (365) onto the silicon surface (116). During the etching, copper nanoparticles enhance or drive the etching process.

Micropatterned arrays of porous silicon: toward sensory biointerfaces.

Science.gov (United States)

Flavel, Benjamin S; Sweetman, Martin J; Shearer, Cameron J; Shapter, Joseph G; Voelcker, Nicolas H

2011-07-01

We describe the fabrication of arrays of porous silicon spots by means of photolithography where a positive photoresist serves as a mask during the anodization process. In particular, photoluminescent arrays and porous silicon spots suitable for further chemical modification and the attachment of human cells were created. The produced arrays of porous silicon were chemically modified by means of a thermal hydrosilylation reaction that facilitated immobilization of the fluorescent dye lissamine, and alternatively, the cell adhesion peptide arginine-glycine-aspartic acid-serine. The latter modification enabled the selective attachment of human lens epithelial cells on the peptide functionalized regions of the patterns. This type of surface patterning, using etched porous silicon arrays functionalized with biological recognition elements, presents a new format of interfacing porous silicon with mammalian cells. Porous silicon arrays with photoluminescent properties produced by this patterning strategy also have potential applications as platforms for in situ monitoring of cell behavior.

Lithium-drifted silicon detector with segmented contacts

Science.gov (United States)

Tindall, Craig S.; Luke, Paul N.

2006-06-13

A method and apparatus for creating both segmented and unsegmented radiation detectors which can operate at room temperature. The devices include a metal contact layer, and an n-type blocking contact formed from a thin layer of amorphous semiconductor. In one embodiment the material beneath the n-type contact is n-type material, such as lithium compensated silicon that forms the active region of the device. The active layer has been compensated to a degree at which the device may be fully depleted at low bias voltages. A p-type blocking contact layer, or a p-type donor material can be formed beneath a second metal contact layer to complete the device structure. When the contacts to the device are segmented, the device is capable of position sensitive detection and spectroscopy of ionizing radiation, such as photons, electrons, and ions.

All-Optical Signal Processing using Silicon Devices

DEFF Research Database (Denmark)

Oxenløwe, Leif Katsuo; Pu, Minhao; Ding, Yunhong

2014-01-01

This paper presents an overview of recent wo rk on the use of silicon waveguides for processing optical data signals. We will describe ultra-fast, ultra-broadband, polarisation-insensitive and phase-sensitive applications including processing of spectrally-efficient data formats and optical phase...

Reconstruction of Cluster Positions in the LHCb Velo

CERN Document Server

Parkes, C; Szumlak, T

2007-01-01

This note describes the `Velo Cluster Position Tool'. This software is used in the GAUDI framework to estimate the hit position of a particle traversing the silicon sensors of the LHCb VELO and to estimate the uncertainty on this position. This estimate and its uncertainty are used in the LHCb track fit. The definition of the cluster centre is given and the baseline linear approximation method presented. The position error is strongly dependent on the angle of incidence of the particle on the silicon sensors measured perpendicularly to the strips -- known as the projected angle -- and on the silicon sensor pitch at the point of incidence, and is parametrised in terms of these variables. Pull plots are presented to show the quality of the current tuning implemented for simulation events.

Influence of nanometric silicon carbide on phenolic resin composites ...

Indian Academy of Sciences (India)

Abstract. This paper presents a preliminary study on obtaining and characterization of phenolic resin-based com- posites modified with nanometric silicon carbide. The nanocomposites were prepared by incorporating nanometric silicon carbide (nSiC) into phenolic resin at 0.5, 1 and 2 wt% contents using ultrasonication to ...

ALICE Silicon Pixel Detector

CERN Multimedia

Manzari, V

2013-01-01

The Silicon Pixel Detector (SPD) forms the innermost two layers of the 6-layer barrel Inner Tracking System (ITS). The SPD plays a key role in the determination of the position of the primary collision and in the reconstruction of the secondary vertices from particle decays.

A study on the beta voltaic micro-nuclear battery based on the planar technology silicon detector

International Nuclear Information System (INIS)

Zhang Kai; He Gaokui; Huang Xiaojian; Liu Yang; Meng Xin; Hao Xiaoyong

2011-01-01

It describes briefly the beta voltaic micro-nuclear battery based on the planar technology silicon detector and radioisotope. Different sensitive area of silicon detectors are used to cooperate with 63 Ni source to buildup of beta voltaic micro-nuclear batteries. The experimental data show that the larger sensitive area the silicon detector has, the higher open circuit voltage it produces, and the open circuit voltage of single cell has reached an excellent result from 0.15 V to 0.30 V. It is possible to get high output power by series or parallel connecting the beta voltaic micro-nuclear batteries. (authors)

Reduction of digital errors of digital charge division type position-sensitive detectors

International Nuclear Information System (INIS)

Uritani, A.; Yoshimura, K.; Takenaka, Y.; Mori, C.

1994-01-01

It is well known that ''digital errors'', i.e. differential non-linearity, appear in a position profile of radiation interactions when the profile is obtained with a digital charge-division-type position-sensitive detector. Two methods are presented to reduce the digital errors. They are the methods using logarithmic amplifiers and a weighting function. The validities of these two methods have been evaluated mainly by computer simulation. These methods can considerably reduce the digital errors. The best results are obtained when both methods are applied. ((orig.))

Directed Atom-by-Atom Assembly of Dopants in Silicon.

Science.gov (United States)

Hudak, Bethany M; Song, Jiaming; Sims, Hunter; Troparevsky, M Claudia; Humble, Travis S; Pantelides, Sokrates T; Snijders, Paul C; Lupini, Andrew R

2018-05-17

The ability to controllably position single atoms inside materials is key for the ultimate fabrication of devices with functionalities governed by atomic-scale properties. Single bismuth dopant atoms in silicon provide an ideal case study in view of proposals for single-dopant quantum bits. However, bismuth is the least soluble pnictogen in silicon, meaning that the dopant atoms tend to migrate out of position during sample growth. Here, we demonstrate epitaxial growth of thin silicon films doped with bismuth. We use atomic-resolution aberration-corrected imaging to view the as-grown dopant distribution and then to controllably position single dopants inside the film. Atomic-scale quantum-mechanical calculations corroborate the experimental findings. These results indicate that the scanning transmission electron microscope is of particular interest for assembling functional materials atom-by-atom because it offers both real-time monitoring and atom manipulation. We envision electron-beam manipulation of atoms inside materials as an achievable route to controllable assembly of structures of individual dopants.

3D, Flash, Induced Current Readout for Silicon Sensors

Energy Technology Data Exchange (ETDEWEB)

Parker, Sherwood I. [Univ. of Hawaii, Honolulu, HI (United States)

2014-06-07

A new method for silicon microstrip and pixel detector readout using (1) 65 nm-technology current amplifers which can, for the first time with silicon microstrop and pixel detectors, have response times far shorter than the charge collection time (2) 3D trench electrodes large enough to subtend a reasonable solid angle at most track locations and so have adequate sensitivity over a substantial volume of pixel, (3) induced signals in addition to, or in place of, collected charge

The application of thick hydrogenated amorphous silicon layers to charged particle and x-ray detection

International Nuclear Information System (INIS)

Perez-Mendez, V.; Cho, G.; Fujieda, I.; Kaplan, S.N.; Qureshi, S.; Street, R.A.

1989-04-01

We outline the characteristics of thick hydrogenated amorphous silicon layers which are optimized for the detection of charged particles, x-rays and γ-rays. Signal amplitude as a function of the linear energy transfer of various particles are given. Noise sources generated by the detector material and by the thin film electronics - a-Si:H or polysilicon proposed for pixel position sensitive detectors readout are described, and their relative amplitudes are calculated. Temperature and neutron radiation effects on leakage currents and the corresponding noise changes are presented. 17 refs., 12 figs., 2 tabs

Strain rate sensitivity of the tensile strength of two silicon carbides: experimental evidence and micromechanical modelling

Science.gov (United States)

Erzar, Benjamin

2017-01-01

Ceramic materials are commonly used to design multi-layer armour systems thanks to their favourable physical and mechanical properties. However, during an impact event, fragmentation of the ceramic plate inevitably occurs due to its inherent brittleness under tensile loading. Consequently, an accurate model of the fragmentation process is necessary in order to achieve an optimum design for a desired armour configuration. In this work, shockless spalling tests have been performed on two silicon carbide grades at strain rates ranging from 103 to 104 s−1 using a high-pulsed power generator. These spalling tests characterize the tensile strength strain rate sensitivity of each ceramic grade. The microstructural properties of the ceramics appear to play an important role on the strain rate sensitivity and on the dynamic tensile strength. Moreover, this experimental configuration allows for recovering damaged, but unbroken specimens, giving unique insight on the fragmentation process initiated in the ceramics. All the collected data have been compared with corresponding results of numerical simulations performed using the Denoual–Forquin–Hild anisotropic damage model. Good agreement is observed between numerical simulations and experimental data in terms of free surface velocity, size and location of the damaged zones along with crack density in these damaged zones. This article is part of the themed issue ‘Experimental testing and modelling of brittle materials at high strain rates’. PMID:27956504

Strain rate sensitivity of the tensile strength of two silicon carbides: experimental evidence and micromechanical modelling.

Science.gov (United States)

Zinszner, Jean-Luc; Erzar, Benjamin; Forquin, Pascal

2017-01-28

Ceramic materials are commonly used to design multi-layer armour systems thanks to their favourable physical and mechanical properties. However, during an impact event, fragmentation of the ceramic plate inevitably occurs due to its inherent brittleness under tensile loading. Consequently, an accurate model of the fragmentation process is necessary in order to achieve an optimum design for a desired armour configuration. In this work, shockless spalling tests have been performed on two silicon carbide grades at strain rates ranging from 10 3 to 10 4  s -1 using a high-pulsed power generator. These spalling tests characterize the tensile strength strain rate sensitivity of each ceramic grade. The microstructural properties of the ceramics appear to play an important role on the strain rate sensitivity and on the dynamic tensile strength. Moreover, this experimental configuration allows for recovering damaged, but unbroken specimens, giving unique insight on the fragmentation process initiated in the ceramics. All the collected data have been compared with corresponding results of numerical simulations performed using the Denoual-Forquin-Hild anisotropic damage model. Good agreement is observed between numerical simulations and experimental data in terms of free surface velocity, size and location of the damaged zones along with crack density in these damaged zones.This article is part of the themed issue 'Experimental testing and modelling of brittle materials at high strain rates'. © 2016 The Author(s).

Strain rate sensitivity of the tensile strength of two silicon carbides: experimental evidence and micromechanical modelling

Science.gov (United States)

Zinszner, Jean-Luc; Erzar, Benjamin; Forquin, Pascal

2017-01-01

Ceramic materials are commonly used to design multi-layer armour systems thanks to their favourable physical and mechanical properties. However, during an impact event, fragmentation of the ceramic plate inevitably occurs due to its inherent brittleness under tensile loading. Consequently, an accurate model of the fragmentation process is necessary in order to achieve an optimum design for a desired armour configuration. In this work, shockless spalling tests have been performed on two silicon carbide grades at strain rates ranging from 103 to 104 s-1 using a high-pulsed power generator. These spalling tests characterize the tensile strength strain rate sensitivity of each ceramic grade. The microstructural properties of the ceramics appear to play an important role on the strain rate sensitivity and on the dynamic tensile strength. Moreover, this experimental configuration allows for recovering damaged, but unbroken specimens, giving unique insight on the fragmentation process initiated in the ceramics. All the collected data have been compared with corresponding results of numerical simulations performed using the Denoual-Forquin-Hild anisotropic damage model. Good agreement is observed between numerical simulations and experimental data in terms of free surface velocity, size and location of the damaged zones along with crack density in these damaged zones. This article is part of the themed issue 'Experimental testing and modelling of brittle materials at high strain rates'.

A flexible tactile sensitive sheet using a hetero-core fiber optic sensor

Science.gov (United States)

Fujino, S.; Yamazaki, H.; Hosoki, A.; Watanabe, K.

2014-05-01

In this report, we have designed a tactile sensitive sheet based on a hetero-core fiber-optic sensor, which realize an areal sensing by using single sensor potion in one optical fiber line. Recently, flexible and wide-area tactile sensing technology is expected to applied to acquired biological information in living space and robot achieve long-term care services such as welfare and nursing-care and humanoid technology. A hetero-core fiber-optic sensor has several advantages such as thin and flexible transmission line, immunity to EMI. Additionally this sensor is sensitive to moderate bending actions with optical loss changes and is independent of temperature fluctuation. Thus, the hetero-core fiber-optic sensor can be suitable for areal tactile sensing. We measure pressure characteristic of the proposed sensitive sheet by changing the pressure position and pinching characteristic on the surface. The proposed tactile sensitive sheet shows monotonic responses on the whole sensitive sheet surface although different sensitivity by the position is observed at the sensitive sheet surface. Moreover, the tactile sensitive sheet could sufficiently detect the pinching motion. In addition, in order to realize the discrimination between pressure and pinch, we fabricated a doubled-over sensor using a set of tactile sensitive sheets, which has different kinds of silicon robbers as a sensitive sheet surface. In conclusion, the flexible material could be given to the tactile sensation which is attached under proposed sensitive sheet.

Synthesis of Si epitaxial layers from technical silicon by liquid-phase epitaxy method

International Nuclear Information System (INIS)

Ibragimov, Sh.I.; Saidov, A.S.; Sapaev, B.; Horvat, M.A.

2004-01-01

Full text: For today silicon is one of the most suitable materials because it is investigated, cheap and several its parameters are even just as good as those of connections A III B V . Disintegration of the USSR has led to the must difficult position of the industry of silicon instrument manufacture because of all industry of semiconductor silicon manufacture had generally concentrated in Ukraine. The importance of semiconductor silicon is rather great, because of, in opinion of expects, the nearest decade this material will dominate over not only on microelectronics but also in the majority of basic researches. Research of obtain of semiconductor silicon, power electronics and solar conversion, is topical interest of the science. In the work research of technological conditions of obtain and measurement of parameters of epitaxial layers obtained from technical silicon + stannum is resulted. Growth of silicon epitaxial layer with suitable parameters on thickness, cleanliness uniformity and structural perfection depends on the correct choice of condition of the growth and temperature. It is shown that in this case the growth occurring without preliminary clearing of materials (mix materials and substrates) at crystallization of epitaxial layer from technical silicon is accompanied by clearing of silicon film from majority of impurities order-of-magnitude. As starting raw material technical silicon of mark Kr.3 has been taken. By means of X-ray microanalyzer 'Jeol' JSM 5910 LV - Japan the quantitative analysis from the different points has been and from the different sides and from different points has been carried out. After corresponding chemical and mechanical processing the quantitative analysis of layer on chip has been carried out. Results of the quantitative analysis are shown. More effective clearing occurs that of the impurity atoms such as Al, P, Ca, Ti and Fe. The obtained material (epitaxial layer) has the parameters: specific resistance ρ∼0.1-4.0 �

Performance evaluation of neuro-PET using silicon photomultipliers

Energy Technology Data Exchange (ETDEWEB)

Jung, Jiwoong; Choi, Yong, E-mail: ychoi@sogang.ac.kr; Jung, Jin Ho, E-mail: jinho1115@gmail.com; Kim, Sangsu; Im, Ki Chun

2016-05-21

Recently, we have developed the second prototype Silicon photomultiplier (SiPM) based positron emission tomography (PET) scanner for human brain imaging. The PET system was comprised of detector block which consisted of 4×4 SiPMs and 4×4 Lutetium Yttrium Orthosilicate arrays, charge signal transmission method, high density position decoder circuit and FPGA-embedded ADC boards. The purpose of this study was to evaluate the performance of the newly developed neuro-PET system. The energy resolution, timing resolution, spatial resolution, sensitivity, stability of the photo-peak position and count rate performance were measured. Tomographic image of 3D Hoffman brain phantom was also acquired to evaluate imaging capability of the neuro-PET. The average energy and timing resolutions measured for 511 keV gamma rays were 17±0.1% and 3±0.3 ns, respectively. Spatial resolution and sensitivity at the center of field of view (FOV) were 3.1 mm and 0.8%, respectively. The average scatter fraction was 0.4 with an energy window of 350–650 keV. The maximum true count rate and maximum NECR were measured as 43.3 kcps and 6.5 kcps at an activity concentration of 16.7 kBq/ml and 5.5 kBq/ml, respectively. Long-term stability results show that there was no significant change in the photo-peak position, energy resolution and count rate for 60 days. Phantom imaging studies were performed and they demonstrated the feasibility for high quality brain imaging. The performance tests and imaging results indicate that the newly developed PET is useful for brain imaging studies, if the axial FOV is extended to improve the system sensitivity.

High sensitivity boron quantification in bulk silicon using the {sup 11}B(p,{alpha}{sub 0}){sup 8}Be nuclear reaction

Energy Technology Data Exchange (ETDEWEB)

Moro, Marcos V.; Silva, Tiago F. da; Added, Nemitala; Rizutto, Marcia A.; Tabacniks, Manfredo H. [Instituto de Fisica da Universidade de Sao Paulo, C.P. 66318, 05315-970 Sao Paulo, SP (Brazil); Neira, John B.; Neto, Joao B. F. [Institute of Research Tecnology, Cidade Universitaria, SP, 05508-091 (Brazil)

2013-05-06

There is a great need to quantify sub-ppm levels of boron in bulk silicon. There are several methods to analyze B in Si: Nuclear Reaction Analysis using the {sup 11}B(p,{alpha}{sub 0}){sup 8}Be reaction exhibits a quantification limit of some hundreds ppm of B in Si. Heavy Ion Elastic Recoil Detection Analysis offers a detection limit of 5 to 10 at. ppm. Secondary Ion Mass Spectrometry is the method of choice of the semiconductor industry for the analysis of B in Si. This work verifies the use of NRA to quantify B in Si, and the corresponding detection limits. Proton beam with 1.6 up to 2.6 MeV was used to obtain the cross-section of the {sup 11}B(p,{alpha}{sub 0}){sup 8}Be nuclear reaction at 170 Degree-Sign scattering angle. The results show good agreementwith literature indicating that the quantification of boron in silicon can be achieved at 100 ppm level (high sensitivity) at LAMFI-IFUSP with about 16% uncertainty. Increasing the detection solid angle and the collected beam charge, can reduce the detection limit to less than 100 ppm meeting present technological needs.

Tests of crossed-wire position sensitive photomultipliers for scintillating fiber particle tracking

International Nuclear Information System (INIS)

Perdrisat, C.F.; Koechner, D.; Majewski, S.; Pourang, R.; Wilson, C.D.; Zorn, C.

1995-01-01

Several applications of two Hamamatsu position sensitive photomultiplier tubes to the detection of high energy particles with scintillating fibers are discussed. The PMTs are of the multiwire anode grid design, type R2486 and R4135. These tubes were tested with both single samples and arrays of 2 and 3 mm diameter scintillating fibers. Measurements of position resolution of the PMTs using either the charge digitization or the delay line readout techniques were made. The results indicate an intrinsic inability of the technique to reconstruct the actual position of a fiber on the photocathode when its location falls halfway between two grid wires. A way to overcome this limit is suggested. (orig.)

Electrochemical Fabrication of Nanostructures on Porous Silicon for Biochemical Sensing Platforms.

Science.gov (United States)

Ko, Euna; Hwang, Joonki; Kim, Ji Hye; Lee, Joo Heon; Lee, Sung Hwan; Tran, Van-Khue; Chung, Woo Sung; Park, Chan Ho; Choo, Jaebum; Seong, Gi Hun

2016-01-01

We present a method for the electrochemical patterning of gold nanoparticles (AuNPs) or silver nanoparticles (AgNPs) on porous silicon, and explore their applications in: (1) the quantitative analysis of hydroxylamine as a chemical sensing electrode and (2) as a highly sensitive surface-enhanced Raman spectroscopy (SERS) substrate for Rhodamine 6G. For hydroxylamine detection, AuNPs-porous silicon can enhance the electrochemical oxidation of hydroxylamine. The current changed linearly for concentrations ranging from 100 μM to 1.32 mM (R(2) = 0.995), and the detection limit was determined to be as low as 55 μM. When used as SERS substrates, these materials also showed that nanoparticles decorated on porous silicon substrates have more SERS hot spots than those decorated on crystalline silicon substrates, resulting in a larger SERS signal. Moreover, AgNPs-porous silicon provided five-times higher signal compared to AuNPs-porous silicon. From these results, we expect that nanoparticles decorated on porous silicon substrates can be used in various types of biochemical sensing platforms.

Application of a one-dimensional position-sensitive detector to a Kratky small-angle x-ray camera

International Nuclear Information System (INIS)

Russell, T.P.; Stein, R.S.; Kopp, M.K.; Zedler, R.E.; Hendricks, R.W.; Lin, J.S.

1979-01-01

A conventional Kratky small-angle collimation system has been modified to allow the use of a one-dimensional position-sensitive x-ray detector. The detector was designed specifically for use with a long-slit camera and has uniform sensitivity over the entire beam in the slit-length direction. Procedures for alignment of the collimation system are given, and a variety of tests of the performance of the system are presented. Among the latter are measurements of electronic noise and parasitic scattering as well as comparisons against samples which were also measured on other cameras. The good agreement of these comparisons demonstrates the success of the use of a position-sensitive detector with the Kratky collimation system

Application of a one-dimensional position-sensitive detector to a Kratky small-angle x-ray camera

Energy Technology Data Exchange (ETDEWEB)

Russell, T.P.; Stein, R.S.; Kopp, M.K.; Zedler, R.E.; Hendricks, R.W.; Lin, J.S.

1979-01-01

A conventional Kratky small-angle collimation system has been modified to allow the use of a one-dimensional position-sensitive x-ray detector. The detector was designed specifically for use with a long-slit camera and has uniform sensitivity over the entire beam in the slit-length direction. Procedures for alignment of the collimation system are given, and a variety of tests of the performance of the system are presented. Among the latter are measurements of electronic noise and parasitic scattering as well as comparisons against samples which were also measured on other cameras. The good agreement of these comparisons demonstrates the success of the use of a position-sensitive detector with the Kratky collimation system.

Silicon photodiode with selective Zr/Si coating for extreme ultraviolet spectral range

International Nuclear Information System (INIS)

Aruev, P N; Barysheva, Mariya M; Ber, B Ya; Zabrodskaya, N V; Zabrodskii, V V; Lopatin, A Ya; Pestov, Alexey E; Petrenko, M V; Polkovnikov, V N; Salashchenko, Nikolai N; Sukhanov, V L; Chkhalo, Nikolai I

2012-01-01

The procedure of manufacturing silicon photodiodes with an integrated Zr/Si filter for extreme ultraviolet (EUV) spectral range is developed. A setup for measuring the sensitivity profile of detectors with spatial resolution better than 100 μm is fabricated. The optical properties of silicon photodiodes in the EUV and visible spectral ranges are investigated. Some characteristics of SPD-100UV diodes with Zr/Si coating and without it, as well as of AXUV-100 diodes, are compared. In all types of detectors a narrow region beyond the operating aperture is found to be sensitive to the visible light. (photodetectors)

Positive words or negative words: whose valence strength are we more sensitive to?

Science.gov (United States)

Yang, Jiemin; Zeng, Jing; Meng, Xianxin; Zhu, Liping; Yuan, Jiajin; Li, Hong; Yusoff, Nasir

2013-10-02

The present study investigates the human brains' sensitivity to the valence strength of emotionally positive and negative chinese words. Event-Related Potentials were recorded, in two different experimental sessions, for Highly Positive (HP), Mildly Positive (MP) and neutral (NP) words and for Highly Negative (HN), Mildly Negative (MN) and neutral (NN) words, while subjects were required to count the number of words, irrespective of word meanings. The results showed a significant emotion effect in brain potentials for both HP and MP words, and the emotion effect occurred faster for HP words than MP words: HP words elicited more negative deflections than NP words in N2 (250-350 ms) and P3 (350-500 ms) amplitudes, while MP words elicited a significant emotion effect in P3, but not in N2, amplitudes. By contrast, HN words elicited larger amplitudes than NN words in N2 but not in P3 amplitudes, whereas MN words produced no significant emotion effect across N2 and P3 components. Moreover, the size of emotion-neutral differences in P3 amplitudes was significantly larger for MP compared to MN words. Thus, the human brain is reactive to both highly and mildly positive words, and this reactivity increased with the positive valence strength of the words. Conversely, the brain is less reactive to the valence of negative relative to positive words. These results suggest that human brains are equipped with increased sensitivity to the valence strength of positive compared to negative words, a type of emotional stimuli that are well known for reduced arousal. © 2013 Elsevier B.V. All rights reserved.

Development of slew-rate-limited time-over-threshold (ToT) ASIC for a multi-channel silicon-based ion detector

Science.gov (United States)

Uenomachi, M.; Orita, T.; Shimazoe, K.; Takahashi, H.; Ikeda, H.; Tsujita, K.; Sekiba, D.

2018-01-01

High-resolution Elastic Recoil Detection Analysis (HERDA), which consists of a 90o sector magnetic spectrometer and a position-sensitive detector (PSD), is a method of quantitative hydrogen analysis. In order to increase sensitivity, a HERDA system using a multi-channel silicon-based ion detector has been developed. Here, as a parallel and fast readout circuit from a multi-channel silicon-based ion detector, a slew-rate-limited time-over-threshold (ToT) application-specific integrated circuit (ASIC) was designed, and a new slew-rate-limited ToT method is proposed. The designed ASIC has 48 channels and each channel consists of a preamplifier, a slew-rate-limited shaping amplifier, which makes ToT response linear, and a comparator. The measured equivalent noise charges (ENCs) of the preamplifier, the shaper, and the ToT on no detector capacitance were 253±21, 343±46, and 560±56 electrons RMS, respectively. The spectra from a 241Am source measured using a slew-rate-limited ToT ASIC are also reported.

Recent improvements to RC-line encoded position-sensitive proportional counters

International Nuclear Information System (INIS)

Borkowski, C.J.; Kopp, M.K.

1977-01-01

Continuing research on the principles of position encoding with RC lines has advanced the design of position-sensitive proportional counters (PSPCs) to meet the requirements for high count rates (>10 5 counts/sec) and good spatial resolution (>10 4 spatial elements) in small-angle scattering experiments with x rays and neutrons. Low-noise preamplifiers were developed with pole-zero cancellation in the feedback circuit and modular linear amplifiers with passive RCL shaping which, compared to previous designs, reduce output saturation at high count rates approx.20 times and shorten the position signal processing time to 2 ) for low-energy ( 800 x 800 mm 2 ) for the measurement of small-angle scattering with neutrons. The method of electronic thickness discrimination was applied to change the effective thickness of an area PSPC from 12 to 2 cm whenever the molybdenum target of an x-ray generator was changed to a copper target. This thickness adjustment increased the signal-to-background ratio by a factor of approx.6 for the 8-keV photons from the copper target, while maintaining a >90% detection efficiency

A prototype silicon detector system for space cosmic-ray charge measurement

Science.gov (United States)

Zhang, Fei; Fan, Rui-Rui; Peng, Wen-Xi; Dong, Yi-Fa; Gong, Ke; Liang, Xiao-Hua; Liu, Ya-Qing; Wang, Huan-Yu

2014-06-01

A readout electronics system used for space cosmic-ray charge measurement for multi-channel silicon detectors is introduced in this paper, including performance measurements. A 64-channel charge sensitive ASIC (VA140) from the IDEAS company is used. With its features of low power consumption, low noise, large dynamic range, and high integration, it can be used in future particle detecting experiments based on silicon detectors.

Etched ion tracks in silicon oxide and silicon oxynitride as charge injection or extraction channels for novel electronic structures

International Nuclear Information System (INIS)

Fink, D.; Petrov, A.V.; Hoppe, K.; Fahrner, W.R.; Papaleo, R.M.; Berdinsky, A.S.; Chandra, A.; Chemseddine, A.; Zrineh, A.; Biswas, A.; Faupel, F.; Chadderton, L.T.

2004-01-01

The impact of swift heavy ions onto silicon oxide and silicon oxynitride on silicon creates etchable tracks in these insulators. After their etching and filling-up with highly resistive matter, these nanometric pores can be used as charge extraction or injection paths towards the conducting channel in the underlying silicon. In this way, a novel family of electronic structures has been realized. The basic characteristics of these 'TEMPOS' (=tunable electronic material with pores in oxide on silicon) structures are summarized. Their functionality is determined by the type of insulator, the etch track diameters and lengths, their areal densities, the type of conducting matter embedded therein, and of course by the underlying semiconductor and the contact geometry. Depending on the TEMPOS preparation recipe and working point, the structures may resemble gatable resistors, condensors, diodes, transistors, photocells, or sensors, and they are therefore rather universally applicable in electronics. TEMPOS structures are often sensitive to temperature, light, humidity and organic gases. Also light-emitting TEMPOS structures have been produced. About 37 TEMPOS-based circuits such as thermosensors, photosensors, humidity and alcohol sensors, amplifiers, frequency multipliers, amplitude modulators, oscillators, flip-flops and many others have already been designed and successfully tested. Sometimes TEMPOS-based circuits are more compact than conventional electronics

Development of real time personal neutron dosimeter with two silicon detectors

Energy Technology Data Exchange (ETDEWEB)

Nakamura, T.; Tsujimura, N. [Tohoku Univ., Cyclotron and Radioisotope Center, Aoba, Aramaki, Aoba-ku (Japan); Yamano, T. [Tokyo Factory, Fuji Electric Co. Ltd., Tokyo (Japan)

1992-07-01

We developed a real time personal neutron dosimeter by using two types of silicon p-n junction detectors, thermal neutron sensor and fast neutron sensor. The thermal neutron sensor which is {sup 10}B doped n-type silicon with a polyethylene radiator mainly counts neutrons of energy front thermal to I MeV, and the fast neutron sensor which is p-type silicon with a polyethylene radiator is sensitive to neutrons above I MeV. The neutron sensitivity measurements revealed that the dosimeter has a rather flat response for dose equivalent from thermal to 15 MeV, excluding a drop from 50 keV to I MeV. In order to get conversion factor from counts to dose equivalent as accurately as possible, we performed the field test of the dosimeter calibration in several neutron-generating fields. By introducing the two-group dose estimation method, this dosimeter can give the neutron dose equivalent within about 50% errors. (author)

CHARACTERIZATION OF A THIN SILICON SENSOR FOR ACTIVE NEUTRON PERSONAL DOSEMETERS.

Science.gov (United States)

Takada, M; Nunomiya, T; Nakamura, T; Matsumoto, T; Masuda, A

2016-09-01

A thin silicon sensor has been developed for active neutron personal dosemeters for use by aircrews and first responders. This thin silicon sensor is not affected by the funneling effect, which causes detection of cosmic protons and over-response to cosmic neutrons. There are several advantages to the thin silicon sensor: a decrease in sensitivity to gamma rays, an improvement of the energy detection limit for neutrons down to 0.8 MeV and an increase in the sensitivity to fast neutrons. Neutron response functions were experimentally obtained using 2.5 and 5 MeV monoenergy neutron beams and a (252)Cf neutron source. Simulation results using the Monte Carlo N-Particle transport code agree quite well with the experimental ones when an energy deposition region shaped like a circular truncated cone is used in place of a cylindrical region. © The Author 2016. Published by Oxford University Press. All rights reserved. For Permissions, please email: journals.permissions@oup.com.

Nonlinear resonance ultrasonic vibrations in Czochralski-silicon wafers

Science.gov (United States)

Ostapenko, S.; Tarasov, I.

2000-04-01

A resonance effect of generation of subharmonic acoustic vibrations is observed in as-grown, oxidized, and epitaxial silicon wafers. Ultrasonic vibrations were generated into a standard 200 mm Czochralski-silicon (Cz-Si) wafer using a circular ultrasound transducer with major frequency of the radial vibrations at about 26 kHz. By tuning frequency (f) of the transducer within a resonance curve, we observed a generation of intense f/2 subharmonic acoustic mode assigned as a "whistle." The whistle mode has a threshold amplitude behavior and narrow frequency band. The whistle is attributed to a nonlinear acoustic vibration of a silicon plate. It is demonstrated that characteristics of the whistle mode are sensitive to internal stress and can be used for quality control and in-line diagnostics of oxidized and epitaxial Cz-Si wafers.

Observation of soliton compression in silicon photonic crystals

Science.gov (United States)

Blanco-Redondo, A.; Husko, C.; Eades, D.; Zhang, Y.; Li, J.; Krauss, T.F.; Eggleton, B.J.

2014-01-01

Solitons are nonlinear waves present in diverse physical systems including plasmas, water surfaces and optics. In silicon, the presence of two photon absorption and accompanying free carriers strongly perturb the canonical dynamics of optical solitons. Here we report the first experimental demonstration of soliton-effect pulse compression of picosecond pulses in silicon, despite two photon absorption and free carriers. Here we achieve compression of 3.7 ps pulses to 1.6 ps with photonic crystal waveguide and an ultra-sensitive frequency-resolved electrical gating technique to detect the ultralow energies in the nanostructured device. Strong agreement with a nonlinear Schrödinger model confirms the measurements. These results further our understanding of nonlinear waves in silicon and open the way to soliton-based functionalities in complementary metal-oxide-semiconductor-compatible platforms. PMID:24423977

Beam test of the 2D position sensitive neutron detector

International Nuclear Information System (INIS)

Tian Lichao; Chen Yuanbo; Sun Zhijia; Tang Bin; Zhou Jianrong; Qi Huirong; Liu Rongguang; Zhang Jian; Yang Guian; Xu Hong

2014-01-01

China Spallation Neutron Source (CSNS), one of the Major scientific apparatuses of the national Eleventh Five-Year Plane, is under construction and three spectrumeters will be constructed in the first phase of the project. A 2D position sensitive neutron detector has been constructed for the Multifunctional Reflect spectrumeter (MR) in Institute of High Energy Physics (IHEP). The basic operation principle of the detector and the test on the residual stress diffractometer of Chinese Advanced Research Reactor (CARR) in China Institute of Atomic Energy (CIAE) is introduced in this paper. The results show that it has a good position resolution of l.18 mm (FWHM) for the neutrons of l.37 A and 2D imaging ability, which is consistent with the theory. It can satisfy the requirements of MR and lays the foundation for the construction of larger neutron detectors. (authors)

Instrumentation for Position Sensitive Detector-Powder diffractometer at CENM-Maamora

International Nuclear Information System (INIS)

Messous, M.-Y.; Belhorma, B.; Labrim, H.; El-Bakkari, B.; Jabri, H.

2013-06-01

Linear position sensitive detectors are widely used to configure neutron diffractometer and other instruments. Necessary front-end electronics and data acquisition system was developed to fulfil such instruments built around the research reactor. In this paper, the front-end electronics dedicated to the neutron powder diffractometer which will be installed in the axial beam port of the Triga Mark II research reactor (Center of Nuclear Studies of Maamora) is described. It consists of High voltage power supply, a Position-decoder and a Multichannel analyzer and data acquisition software. The 3 He-PSD detector response exposed to the neutron flow emitted by 252 Cf source held in paraffin spheres with distinct thicknesses for moderation effect, is shown. Monte-Carlo N Particles code (MCNP) simulations were also performed to study both the detector performance and the paraffin efficiency. (authors)

Large area sheet task. Advanced dendritic web growth development. [silicon films

Science.gov (United States)

Duncan, C. S.; Seidensticker, R. G.; Mchugh, J. P.; Hopkins, R. H.; Meier, D.; Frantti, E.; Schruben, J.

1981-01-01

The development of a silicon dendritic web growth machine is discussed. Several refinements to the sensing and control equipment for melt replenishment during web growth are described and several areas for cost reduction in the components of the prototype automated web growth furnace are identified. A circuit designed to eliminate the sensitivity of the detector signal to the intensity of the reflected laser beam used to measure melt level is also described. A variable speed motor for the silicon feeder is discussed which allows pellet feeding to be accomplished at a rate programmed to match exactly the silicon removed by web growth.

Silicone metalization

Energy Technology Data Exchange (ETDEWEB)

Maghribi, Mariam N. (Livermore, CA); Krulevitch, Peter (Pleasanton, CA); Hamilton, Julie (Tracy, CA)

2008-12-09

A system for providing metal features on silicone comprising providing a silicone layer on a matrix and providing a metal layer on the silicone layer. An electronic apparatus can be produced by the system. The electronic apparatus comprises a silicone body and metal features on the silicone body that provide an electronic device.

Formation of porous silicon oxide from substrate-bound silicon rich silicon oxide layers by continuous-wave laser irradiation

Science.gov (United States)

Wang, Nan; Fricke-Begemann, Th.; Peretzki, P.; Ihlemann, J.; Seibt, M.

2018-03-01

Silicon nanocrystals embedded in silicon oxide that show room temperature photoluminescence (PL) have great potential in silicon light emission applications. Nanocrystalline silicon particle formation by laser irradiation has the unique advantage of spatially controlled heating, which is compatible with modern silicon micro-fabrication technology. In this paper, we employ continuous wave laser irradiation to decompose substrate-bound silicon-rich silicon oxide films into crystalline silicon particles and silicon dioxide. The resulting microstructure is studied using transmission electron microscopy techniques with considerable emphasis on the formation and properties of laser damaged regions which typically quench room temperature PL from the nanoparticles. It is shown that such regions consist of an amorphous matrix with a composition similar to silicon dioxide which contains some nanometric silicon particles in addition to pores. A mechanism referred to as "selective silicon ablation" is proposed which consistently explains the experimental observations. Implications for the damage-free laser decomposition of silicon-rich silicon oxides and also for controlled production of porous silicon dioxide films are discussed.

The LHCb Silicon Inner Tracker

International Nuclear Information System (INIS)

Sievers, P.

2002-01-01

A silicon strip detector has been adopted as baseline technology for the LHCb Inner Tracker system. It consists of nine planar stations covering a cross-shaped area around the LHCb beam pipe. Depending on the final layout of the stations the sensitive surface of the Inner Tracker will be of the order of 14 m 2 . Ladders have to be 22 cm long and the pitch of the sensors should be as large as possible in order to reduce costs of the readout electronics. Major design criteria are material budget, short shaping time and a moderate spatial resolution of about 80 μm. After an introduction on the requirements of the LHCb Inner Tracker we present a description and characterization of silicon prototype sensors. First, laboratory and test beam results are discussed

The local lymph node assay: current position in the regulatory classification of skin sensitizing chemicals.

Science.gov (United States)

Basketter, David A; Gerberick, G Frank; Kimber, Ian

2007-01-01

The local lymph node assay (LLNA) is being used increasingly in the identification of skin sensitizing chemicals for regulatory purposes. In the context of new chemicals legislation (REACH) in Europe, it is the preferred assay. The rationale for this is that the LLNA quantitative and objective approach to skin sensitization testing allied with the important animal welfare benefits that the method offers. However, as with certain guinea pig sensitization tests before it, this increasing use also brings experience with an increasingly wide range of industrial and other chemicals where the outcome of the assay does not always necessarily meet with the expectations of those conducting it. Sometimes, the result appears to be a false negative, but rather more commonly, the complaint is that the chemical represents a false positive. Against this background we have here reviewed a number of instances where false positive and false negative results have been described and have sought to reconcile science with expectation. Based on these analyses, it is our conclusion that false positives and false negatives do occur in the LLNA, as they do with any other skin sensitization assay (and indeed with all tests used for hazard identification), and that this occurs for a number of reasons. We further conclude, however, that false positive results in the LLNA, as with the guinea pig maximization test, arise most commonly via failure to distinguish what is scientifically correct from that which is unpalatable. The consequences of this confusion are discussed in the article, particularly in relation to the need to integrate both potency measurement and risk assessments into classification and labelling schemes that aim to manage potential risks to human health.

A probe station for testing silicon sensors

CERN Multimedia

Ulysse, Fichet

2017-01-01

A probe station for testing silicon sensors. The probe station is located inside a dark box that can keep away light during the measurement. The set-up is located in the DSF (Department Silicon Facility). The golden plate is the "chuck" where the sensor is usually placed on. With the help of "manipulators", thin needles can be precisely positioned that can contact the sensor surface. Using these needles and the golden chuck, a high voltage can be applied to the sensor to test its behaviour under high voltage. We will use the silicon sensors that we test here for building prototypes of a highly granular sandwich calorimeter, the CMS HGC (Highly granular Calorimeter) upgrade for High-Luminosity LHC.

Analysis of asymmetric resonance response of thermally excited silicon micro-cantilevers for mass-sensitive nanoparticle detection

Science.gov (United States)

Bertke, Maik; Hamdana, Gerry; Wu, Wenze; Suryo Wasisto, Hutomo; Uhde, Erik; Peiner, Erwin

2017-06-01

In this paper, the asymmetric resonance frequency (f 0) responses of thermally in-plane excited silicon cantilevers for a pocket-sized, cantilever-based airborne nanoparticle detector (Cantor) are analysed. By measuring the shift of f 0 caused by the deposition of nanoparticles (NPs), the cantilevers are used as a microbalance. The cantilever sensors are low cost manufactured from silicon by bulk-micromachining techniques and contain an integrated p-type heating actuator and a sensing piezoresistive Wheatstone bridge. f 0 is tracked by a homemade phase-locked loop (PPL) for real-time measurements. To optimize the sensor performance, a new cantilever geometry was designed, fabricated and characterized by its frequency responses. The most significant characterisation parameters of our application are f 0 and the quality factor (Q), which have high influences on sensitivity and efficiency of the NP detector. Regarding the asymmetric resonance signal, a novel fitting function based on the Fano resonance replacing the conventionally used function of the simple harmonic oscillator and a method to calculate Q by its fitting parameters were developed for a quantitative evaluation. To obtain a better understanding of the resonance behaviours, we analysed the origin of the asymmetric line shapes. Therefore, we compared the frequency response of the on-chip thermal excitation with an external excitation using an in-plane piezo actuator. In correspondence to the Fano effect, we could reconstruct the measured resonance curves by coupling two signals with constant amplitude and the expected signal of the cantilever, respectively. Moreover, the phase of the measurement signal can be analysed by this method, which is important to understand the locking process of the PLL circuit. Besides the frequency analysis, experimental results and calibration measurements with different particle types are presented. Using the described analysis method, decent results to optimize a next

Optimization of sensitivity and noise in piezoresistive cantilevers

DEFF Research Database (Denmark)

Yu, Xiaomei; Thaysen, Jacob; Hansen, Ole

2002-01-01

In this article, the sensitivity and the noise of piezoresistive cantilevers were systematically investigated with respect to the piezoresistor geometry, the piezoresistive materials, the doping dose, the annealing temperature, and the operating biased voltage. With the noise optimization results......(-6), the biggest gauge factors was 95, and the minimum detectable deflection (MDD) at 6 V and 200 Hz-measurement bandwidth was 0.3 nm for a single-crystal silicon cantilever. Of the two LPCVD silicon piezoresistive cantilevers, amorphous silicon piezoresistors had relatively lower 1/f noise. The MDD for a LPCVD...

Ultrafast readout of scintillating fibers using upgraded position-sensitive photomultipliers

International Nuclear Information System (INIS)

Onel, Y.

1994-01-01

Experimental results obtained with commercially available position-sensitive photomultipliers (PSPM) coupled with 0.5 mm diameter scintillating fiber arrays show some promising performances such as space resolution better than 200 μm and time resolution ∼ 1.5 ns with a detection efficiency higher than 90%. Major progress has also been recently achieved with an upgrade of a PSPM based on new grid dynode structures. Two-track spatial resolution has been studied using the upgraded PSPM. Initial studies demonstrate that two tracks separated by a minimum distance of 3 mm are resolved

Performance of irradiated silicon microstrip detectors

International Nuclear Information System (INIS)

Catacchini, E.; Civinini, C.; D'Alessandro, R.; Focardi, E.; Lenzi, M.; Meschini, M.; Parrini, G.; Pieri, M.

1999-01-01

Silicon microstrip devices to be installed in Large Hadron Collider (LHC) tracking detectors will have to operate in a high radiation environment. We report on performance studies of silicon microstrip detectors irradiated with neutrons or protons, up to fluences comparable to the first ten years of running at LHC. Obtained results show that irradiated detectors can still be operated with satisfactory signal-to-noise ratio,and in the case of inhomogeneously type inverted detector a very good position resolution is achieved regardless of the zone crossed by the particle

Back contact to film silicon on metal for photovoltaic cells

Science.gov (United States)

Branz, Howard M.; Teplin, Charles; Stradins, Pauls

2013-06-18

A crystal oriented metal back contact for solar cells is disclosed herein. In one embodiment, a photovoltaic device and methods for making the photovoltaic device are disclosed. The photovoltaic device includes a metal substrate with a crystalline orientation and a heteroepitaxial crystal silicon layer having the same crystal orientation of the metal substrate. A heteroepitaxial buffer layer having the crystal orientation of the metal substrate is positioned between the substrate and the crystal silicon layer to reduce diffusion of metal from the metal foil into the crystal silicon layer and provide chemical compatibility with the heteroepitaxial crystal silicon layer. Additionally, the buffer layer includes one or more electrically conductive pathways to electrically couple the crystal silicon layer and the metal substrate.

Active silicon x-ray for measuring electron temperature

International Nuclear Information System (INIS)

Snider, R.T.

1994-07-01

Silicon diodes are commonly used for x-ray measurements in the soft x-ray region between a few hundred ev and 20 keV. Recent work by Cho has shown that the charge collecting region in an underbiased silicon detector is the depletion depth plus some contribution from a region near the depleted region due to charge-diffusion. The depletion depth can be fully characterized as a function of the applied bias voltage and is roughly proportional to the squart root of the bias voltage. We propose a technique to exploit this effect to use the silicon within the detector as an actively controlled x-ray filter. With reasonable silicon manufacturing methods, a silicon diode detector can be constructed in which the sensitivity of the collected charge to the impinging photon energy spectrum can be changed dynamically in the visible to above the 20 keV range. This type of detector could be used to measure the electron temperature in, for example, a tokamak plasma by sweeping the applied bias voltage during a plasma discharge. The detector samples different parts of the energy spectrum during the bias sweep, and the data collected contains enough information to determine the electron temperature. Benefits and limitations of this technique will be discussed along with comparisons to similar methods for measuring electron temperature and other applications of an active silicon x-ray filter

Tattoo-Like Strain Gauges Based on Silicon Nano-Membranes

Science.gov (United States)

Lu, Nanshu

2012-02-01

This talk reports the in vivo measurement of tissue deformation through adhesive-free, conformable lamination of a tattoo-like elastic strain gauge consisted of piezoresistive silicon nano-membranes strategically integrated with tissue-like elastomeric substrates. The mechanical deformation in soft tissues cannot yet be directly quantified due to the lack of enabling tools. While stiff strain gauges for structural health monitoring have long existed, biological tissues are soft, curvilinear and highly deformable in contrast to civil or aerospace structures. An ultra-thin, ultra-soft, tattoo-like strain gauge that can conform to the convoluted surface of human body and stay attached during locomotion will be able to directly quantify tissue deformation without affecting the mechanical behavior of the tissue. While single crystalline silicon is known to have the highest gauge factor and best elastic response, it is intrinsically stiff and brittle. To achieve strain gauges with high compliance, high stretchability and reasonable sensitivity, single crystalline silicon nano-membranes will be transfer-printed onto polymeric support through carefully engineered stamps. The thickness and length of the Si strip will be chosen according to theoretical and numerical mechanics analysis which takes into account for the tradeoff between stretchability and sensitivity.

Power Conversion Efficiency of Arylamine Organic Dyes for Dye-Sensitized Solar Cells (DSSCs Explicit to Cobalt Electrolyte: Understanding the Structural Attributes Using a Direct QSPR Approach

Directory of Open Access Journals (Sweden)

Supratik Kar

2016-12-01

Full Text Available Post silicon solar cell era involves light-absorbing dyes for dye-sensitized solar systems (DSSCs. Therefore, there is great interest in the design of competent organic dyes for DSSCs with high power conversion efficiency (PCE to bypass some of the disadvantages of silicon-based solar cell technologies, such as high cost, heavy weight, limited silicon resources, and production methods that lead to high environmental pollution. The DSSC has the unique feature of a distance-dependent electron transfer step. This depends on the relative position of the sensitized organic dye in the metal oxide composite system. In the present work, we developed quantitative structure-property relationship (QSPR models to set up the quantitative relationship between the overall PCE and quantum chemical molecular descriptors. They were calculated from density functional theory (DFT and time-dependent DFT (TD-DFT methods as well as from DRAGON software. This allows for understanding the basic electron transfer mechanism along with the structural attributes of arylamine-organic dye sensitizers for the DSSCs explicit to cobalt electrolyte. The identified properties and structural fragments are particularly valuable for guiding time-saving synthetic efforts for development of efficient arylamine organic dyes with improved power conversion efficiency.

Oxygen defect processes in silicon and silicon germanium

KAUST Repository

Chroneos, A.

2015-06-18

Silicon and silicon germanium are the archetypical elemental and alloy semiconductor materials for nanoelectronic, sensor, and photovoltaic applications. The investigation of radiation induced defects involving oxygen, carbon, and intrinsic defects is important for the improvement of devices as these defects can have a deleterious impact on the properties of silicon and silicon germanium. In the present review, we mainly focus on oxygen-related defects and the impact of isovalent doping on their properties in silicon and silicon germanium. The efficacy of the isovalent doping strategies to constrain the oxygen-related defects is discussed in view of recent infrared spectroscopy and density functional theory studies.

Oxygen defect processes in silicon and silicon germanium

KAUST Repository

Chroneos, A.; Sgourou, E. N.; Londos, C. A.; Schwingenschlö gl, Udo

2015-01-01

Silicon and silicon germanium are the archetypical elemental and alloy semiconductor materials for nanoelectronic, sensor, and photovoltaic applications. The investigation of radiation induced defects involving oxygen, carbon, and intrinsic defects is important for the improvement of devices as these defects can have a deleterious impact on the properties of silicon and silicon germanium. In the present review, we mainly focus on oxygen-related defects and the impact of isovalent doping on their properties in silicon and silicon germanium. The efficacy of the isovalent doping strategies to constrain the oxygen-related defects is discussed in view of recent infrared spectroscopy and density functional theory studies.

Light-induced enhancement of the minority carrier lifetime in boron-doped Czochralski silicon passivated by doped silicon nitride

International Nuclear Information System (INIS)

Wang, Hongzhe; Chen, Chao; Pan, Miao; Sun, Yiling; Yang, Xi

2015-01-01

Graphical abstract: - Highlights: • The phosphorus-doped SiN x with negative fixed charge was deposited by PECVD. • The increase of lifetime was observed on P-doped SiN x passivated Si under illumination. • The enhancement of lifetime was caused by the increase of negative fixed charges. - Abstract: This study reports a doubling of the effective minority carrier lifetime under light soaking conditions, observed in a boron-doped p-type Czochralski grown silicon wafer passivated by a phosphorus-doped silicon nitride thin film. The analysis of capacitance–voltage curves revealed that the fixed charge in this phosphorus-doped silicon nitride film was negative, which was unlike the well-known positive fixed charges observed in traditional undoped silicon nitride. The analysis results revealed that the enhancement phenomenon of minority carrier lifetime was caused by the abrupt increase in the density of negative fixed charge (from 7.2 × 10 11 to 1.2 × 10 12 cm −2 ) after light soaking.

Building blocks for future detectors: Silicon test masses and 1550 nm laser light

International Nuclear Information System (INIS)

Schnabel, R; Britzger, M; Burmeister, O; Danzmann, K; Duck, J; Eberle, T; Friedrich, D; Luck, H; Mehmet, M; Steinlechner, S; Willke, B; Brueckner, F; Nawrodt, R

2010-01-01

Current interferometric gravitational wave detectors use the combination of quasi-monochromatic, continuous-wave laser light at 1064 nm and fused silica test masses at room temperature. Detectors of the third generation, such as the Einstein-Telescope, will involve a considerable sensitivity increase. The combination of 1550 nm laser radiation and crystalline silicon test masses at low temperatures might be important ingredients in order to achieve the sensitivity goal. Here we compare some properties of the fused silica and silicon test mass materials relevant for decreasing the thermal noise in future detectors as well as the recent technology achievements in the preparation of laser radiation at 1064 nm and 1550 nm relevant for decreasing the quantum noise. We conclude that silicon test masses and 1550 nm laser light have the potential to form the future building blocks of gravitational wave detection.

One-dimensional position sensitive detector based on photonic crystals

International Nuclear Information System (INIS)

Xi Feng; Qin Lan; Xue Lian; Duan Ying

2013-01-01

Position sensitive detectors (PSDs) are an important class of optical sensors which utilizes the lateral photovoltaic effect (LPVE). According to the operation principle of PSD, we demonstrate that LPVE can be enhanced by lengthening the lifetime of photo-generated carriers. A PSD based on photonic crystals (PCs) composed of MgF 2 and InP is proposed and designed. The transmittances of the defect PC and the reflectance of the perfect PC in the PSD are obtained with transfer matrix method. The theoretical research on the designed device shows that LPVE is enhanced by improving the transmittance of the defect PC and the reflectance of the perfect PC to lengthen the lifetime of photo-generated carriers. (authors)

Plasmonic and silicon spherical nanoparticle antireflective coatings

Science.gov (United States)

Baryshnikova, K. V.; Petrov, M. I.; Babicheva, V. E.; Belov, P. A.

2016-03-01

Over the last decade, plasmonic antireflecting nanostructures have been extensively studied to be utilized in various optical and optoelectronic systems such as lenses, solar cells, photodetectors, and others. The growing interest to all-dielectric photonics as an alternative optical technology along with plasmonics motivates us to compare antireflective properties of plasmonic and all-dielectric nanoparticle coatings based on silver and crystalline silicon respectively. Our simulation results for spherical nanoparticles array on top of amorphous silicon show that both silicon and silver coatings demonstrate strong antireflective properties in the visible spectral range. For the first time, we show that zero reflectance from the structure with silicon coatings originates from the destructive interference of electric- and magnetic-dipole responses of nanoparticle array with the wave reflected from the substrate, and we refer to this reflection suppression as substrate-mediated Kerker effect. We theoretically compare the silicon and silver coating effectiveness for the thin-film photovoltaic applications. Silver nanoparticles can be more efficient, enabling up to 30% increase of the overall absorbance in semiconductor layer. Nevertheless, silicon coatings allow up to 64% absorbance increase in the narrow band spectral range because of the substrate-mediated Kerker effect, and band position can be effectively tuned by varying the nanoparticles sizes.

Hybrid Design, Procurement and Testing for the LHCb Silicon Tracker

CERN Document Server

Bay, A; Frei, R; Jiménez-Otero, S; Perrin, A; Tran, MT; Van Hunen, J J; Vervink, K; Vollhardt, A; Agari, M; Bauer, C; Blouw, J; Hofmann, W; Knöpfle, K T; Löchner, S; Schmelling, M; Schwingenheuer, B; Smale, N J; Adeva, B; Esperante-Pereira, D; Lois, C; Vázquez, P; Lehner, F; Bernhard, R P; Bernet, R; Gassner, J; Köstner, S; Needham, M; Steinkamp, O; Straumann, U; Volyanskyy, D; Voss, H; Wenger, A

2005-01-01

The Silicon Tracker of the LHCb experiment consists of four silicon detector stations positioned along the beam line of the experiment. The detector modules of each station are constructed from wide pitch silicon microstrip sensors. Located at the module's end, a polyimide hybrid is housing the front-end electronics. The assembly of the more than 600 hybrids has been outsourced to industry. We will report on the design and production status of the hybrids for the LHCb Silicon Tracker and describe the quality assurance tests. Particular emphasis is laid on the vendor qualifying and its impact on our hybrid design that we experienced during the prototyping phase.

Commissioning and Performance of the LHCb Silicon Tracker

CERN Multimedia

van Tilburg, J; Buechler, A; Bursche , A; Chiapolini, N; Elsaesser, C; Hangartner, V; Salzmann, C; Steiner, S; Steinkamp, O; Staumann, U; Tobin, M; Vollhardt, A; Bay, A; Bettler, M O; Blanc, F; Bressieux, J; Conti, G; Fave, V; Frei, R; Gauvin, N; Gonzalez, R; Haefeli, G; Hicheur, A; Keune, A; Luisier, J; Muresan, R; Nakada, T; Needham, M; Nicolas, L; Knecht, M; Perrin, A; Potterat, C; Schneider, O; Tran, M; Aquines Gutierrez, O; Bauer, C; Britsch, M; Hofmann, W; Maciuc, F; Schmelling, M; Voss, H; Adeva, B; Esperante, D; Fungueiriño Pazos, J; Gallas, A; Pazos-Alvarez, A; Pérez-Trigo, E; Pló Casasús, M; Rogríguez Pérez, P; Saborido, J; Vázquez, P; Iakovenko, V; Okhrimenko, O; Pugatch, V

2010-01-01

The LHCb Silicon Tracker is a silicon micro-strip detector with a sensitive area of 12 m$^2$ and a total of 272k readout channels. The Silicon Tracker consists of two parts that use different detector modules. The detector installation was completed by early summer 2008 and the commissioning without beam has reached its finals stage, successfully overcoming most of the encountered problems. Currently, the detector has more than 99% of the channels fully functioning. Commissioning with particles has started using beam-induced events from the LHC injection tests in 2008 and 2009. These events allowed initial studies of the detector performance. Especially, the detector modules could be aligned with an accuracy of about 20 $\\mu$m. Furthermore, with the first beam collisions that took place end of 2009 we could further study the performance and improve the alignment of the detector.

Ion beam figuring of silicon aspheres

Science.gov (United States)

Demmler, Marcel; Zeuner, Michael; Luca, Alfonz; Dunger, Thoralf; Rost, Dirk; Kiontke, Sven; Krüger, Marcus

2011-03-01

Silicon lenses are widely used for infrared applications. Especially for portable devices the size and weight of the optical system are very important factors. The use of aspherical silicon lenses instead of spherical silicon lenses results in a significant reduction of weight and size. The manufacture of silicon lenses is more challenging than the manufacture of standard glass lenses. Typically conventional methods like diamond turning, grinding and polishing are used. However, due to the high hardness of silicon, diamond turning is very difficult and requires a lot of experience. To achieve surfaces of a high quality a polishing step is mandatory within the manufacturing process. Nevertheless, the required surface form accuracy cannot be achieved through the use of conventional polishing methods because of the unpredictable behavior of the polishing tools, which leads to an unstable removal rate. To overcome these disadvantages a method called Ion Beam Figuring can be used to manufacture silicon lenses with high surface form accuracies. The general advantage of the Ion Beam Figuring technology is a contactless polishing process without any aging effects of the tool. Due to this an excellent stability of the removal rate without any mechanical surface damage is achieved. The related physical process - called sputtering - can be applied to any material and is therefore also applicable to materials of high hardness like Silicon (SiC, WC). The process is realized through the commercially available ion beam figuring system IonScan 3D. During the process, the substrate is moved in front of a focused broad ion beam. The local milling rate is controlled via a modulated velocity profile, which is calculated specifically for each surface topology in order to mill the material at the associated positions to the target geometry. The authors will present aspherical silicon lenses with very high surface form accuracies compared to conventionally manufactured lenses.

Optothermal response of a single silicon nanotip

Science.gov (United States)

Vella, A.; Shinde, D.; Houard, J.; Silaeva, E.; Arnoldi, L.; Blum, I.; Rigutti, L.; Pertreux, E.; Maioli, P.; Crut, A.; Del Fatti, N.

2018-02-01

The optical properties and thermal dynamics of conical single silicon nanotips are experimentally and theoretically investigated. The spectral and spatial dependencies of their optical extinction are quantitatively measured by spatial modulation spectroscopy (SMS). A nonuniform optical extinction along the tip axis and an enhanced near-infrared absorption, as compared to bulk crystalline silicon, are evidenced. This information is a key input for computing the thermal response of single silicon nanotips under ultrafast laser illumination, which is investigated by laser assisted atom probe tomography (La-APT) used as a highly sensitive temperature probe. A combination of these two experimental techniques and comparison with modeling also permits us to elucidate the impact of thermal effects on the laser assisted field evaporation process. Extension of this coupled approach opens up future perspectives for the quantitative study of the optical and thermal properties of a wide class of individual nano-objects, in particular elongated ones such as nanotubes, nanowires, and nanocones, which constitute promising nanosources for electron and/or ion emission.

Specific and reversible immobilization of histidine-tagged proteins on functionalized silicon nanowires

DEFF Research Database (Denmark)

Liu, Yi-Chi; Rieben, Nathalie Ines; Iversen, Lars

2010-01-01

Silicon nanowire (Si NW)-based field effect transistors (FETs) have shown great potential as biosensors (bioFETs) for ultra-sensitive and label-free detection of biomolecular interactions. Their sensitivity depends not only on the device properties, but also on the function of the biological reco...

Sensitivity of the Positive and Negative Syndrome Scale (PANSS) in Detecting Treatment Effects via Network Analysis.

Science.gov (United States)

Esfahlani, Farnaz Zamani; Sayama, Hiroki; Visser, Katherine Frost; Strauss, Gregory P

2017-12-01

Objective: The Positive and Negative Syndrome Scale is a primary outcome measure in clinical trials examining the efficacy of antipsychotic medications. Although the Positive and Negative Syndrome Scale has demonstrated sensitivity as a measure of treatment change in studies using traditional univariate statistical approaches, its sensitivity to detecting network-level changes in dynamic relationships among symptoms has yet to be demonstrated using more sophisticated multivariate analyses. In the current study, we examined the sensitivity of the Positive and Negative Syndrome Scale to detecting antipsychotic treatment effects as revealed through network analysis. Design: Participants included 1,049 individuals diagnosed with psychotic disorders from the Phase I portion of the Clinical Antipsychotic Trials of Intervention Effectiveness (CATIE) study. Of these participants, 733 were clinically determined to be treatment-responsive and 316 were found to be treatment-resistant. Item level data from the Positive and Negative Syndrome Scale were submitted to network analysis, and macroscopic, mesoscopic, and microscopic network properties were evaluated for the treatment-responsive and treatment-resistant groups at baseline and post-phase I antipsychotic treatment. Results: Network analysis indicated that treatment-responsive patients had more densely connected symptom networks after antipsychotic treatment than did treatment-responsive patients at baseline, and that symptom centralities increased following treatment. In contrast, symptom networks of treatment-resistant patients behaved more randomly before and after treatment. Conclusions: These results suggest that the Positive and Negative Syndrome Scale is sensitive to detecting treatment effects as revealed through network analysis. Its findings also provide compelling new evidence that strongly interconnected symptom networks confer an overall greater probability of treatment responsiveness in patients with

Flexible integration of free-standing nanowires into silicon photonics.

Science.gov (United States)

Chen, Bigeng; Wu, Hao; Xin, Chenguang; Dai, Daoxin; Tong, Limin

2017-06-14

Silicon photonics has been developed successfully with a top-down fabrication technique to enable large-scale photonic integrated circuits with high reproducibility, but is limited intrinsically by the material capability for active or nonlinear applications. On the other hand, free-standing nanowires synthesized via a bottom-up growth present great material diversity and structural uniformity, but precisely assembling free-standing nanowires for on-demand photonic functionality remains a great challenge. Here we report hybrid integration of free-standing nanowires into silicon photonics with high flexibility by coupling free-standing nanowires onto target silicon waveguides that are simultaneously used for precise positioning. Coupling efficiency between a free-standing nanowire and a silicon waveguide is up to ~97% in the telecommunication band. A hybrid nonlinear-free-standing nanowires-silicon waveguides Mach-Zehnder interferometer and a racetrack resonator for significantly enhanced optical modulation are experimentally demonstrated, as well as hybrid active-free-standing nanowires-silicon waveguides circuits for light generation. These results suggest an alternative approach to flexible multifunctional on-chip nanophotonic devices.Precisely assembling free-standing nanowires for on-demand photonic functionality remains a challenge. Here, Chen et al. integrate free-standing nanowires into silicon waveguides and show all-optical modulation and light generation on silicon photonic chips.

A new position-sensitive transmission detector for epithermal neutron imaging

International Nuclear Information System (INIS)

Schooneveld, E M; Kockelmann, W; Rhodes, N; Tardocchi, M; Gorini, G; Perelli Cippo, E; Nakamura, T; Postma, H; Schillebeeckx, P

2009-01-01

A new neutron resonant transmission (NRT) detector for epithermal neutron imaging has been designed and built for the ANCIENT CHARM project, which is developing a set of complementary neutron imaging methods for analysis of cultural heritage objects. One of the techniques being exploited is NRT with the aim of performing bulk elemental analysis. The 16-pixel prototype NRT detector consists of independent crystals of 2 x 2 mm pixel size, which allow for 2D position-sensitive transmission measurements with epithermal neutrons. First results obtained at the ISIS pulsed spallation neutron source are presented. (fast track communication)

Silicon epitaxy on textured double layer porous silicon by LPCVD

International Nuclear Information System (INIS)

Cai Hong; Shen Honglie; Zhang Lei; Huang Haibin; Lu Linfeng; Tang Zhengxia; Shen Jiancang

2010-01-01

Epitaxial silicon thin film on textured double layer porous silicon (DLPS) was demonstrated. The textured DLPS was formed by electrochemical etching using two different current densities on the silicon wafer that are randomly textured with upright pyramids. Silicon thin films were then grown on the annealed DLPS, using low-pressure chemical vapor deposition (LPCVD). The reflectance of the DLPS and the grown silicon thin films were studied by a spectrophotometer. The crystallinity and topography of the grown silicon thin films were studied by Raman spectroscopy and SEM. The reflectance results show that the reflectance of the silicon wafer decreases from 24.7% to 11.7% after texturing, and after the deposition of silicon thin film the surface reflectance is about 13.8%. SEM images show that the epitaxial silicon film on textured DLPS exhibits random pyramids. The Raman spectrum peaks near 521 cm -1 have a width of 7.8 cm -1 , which reveals the high crystalline quality of the silicon epitaxy.

Influence for high intensity irradiation on characteristics of silicon strip-detectors

International Nuclear Information System (INIS)

Anokhin, I.E.; Pugatch, V.M.; Zinets, O.S.

1995-01-01

Full text: Silicon strip detectors (SSD) are widely used for the coordinate determination of short-range as well as minimum ionizing particles with high spatial resolution. Submicron position sensitivity of strip-detectors for short-range particles has been studied by means of two dimensional analyses of charges collected by neighboring strips as well as by measurement of charge collection times [1]. Silicon strip detectors was also used for testing high energy electron beam [2]. Under large fluences the radiation defects are stored and such characteristics of strip-detectors as an accuracy of the coordinate determination and the registration efficiency are significantly changed. Radiation defects lead to a decrease of the lifetime and mobility of charge carriers and therefore to changes of conditions for the charge collection in detectors. The inhomogeneity in spatial distribution if defects and electrical field plays an important role in the charge collection. In this report the role of the diffusion and drift in the charge collection in silicon strip-detectors under irradiation up to 10 Mrad has been studied. The electric field distribution and its dependence on the radiation dose in the detector have been calculated. It is shown that for particles incident between adjacent strips the coordinate determination precision depends strongly on the detector geometry and the electric field distribution, particularly in the vicinity of strips. Measuring simultaneously the collected charges and collection times on adjacent strips one can essentially improve reliability of the coordinate determination for short-range particles. Usually SSD are fabricated on n-type wafers. It is well known that under high intensity irradiation n-Si material converts into p-Si as far as p-type silicon is more radiative hard than n-type silicon [3] it is reasonable to fabricate SSD using high resistivity p-Si. Characteristics of SSD in basis n-and P-Si have been compared and higher

Position-sensitive proportional counter with low-resistance metal-wire anode

International Nuclear Information System (INIS)

Kopp, M.K.

1980-01-01

A position-sensitive proportional counter circuit is provided which uses a conventional (low-resistance, metal-wire anode) proportional counter for spatial resolution of an ionizing event along the anode of the counther. A pair of specially designed activecapacitance preamplifiers terminate the anode ends wherein the anode is treated as an RC line. The preamplifiers act as stabilized active capacitance loads and each is composed of a series-feedback, lownoise amplifier, a unity-gain, shunt-feedback amplifier whose output is connected through a feedback capacitor to the series-feedback amplifier input. The stabilized capacitance loading of the anode allows distributed RC-line position encoding and subsequent time difference decoding by sensing the difference in rise times of pulses at te anode ends where the difference is primarily in response to the distributed capacitance along the anode. This allows the use of lower resistance wire anodes for spatial radiation detection which simplifies the counter construction and handling of the anodes, and stabilizes the anode resistivity at high count rates

Position-sensitive radiation monitoring (surface contamination monitor). Innovative technology summary report

International Nuclear Information System (INIS)

1999-06-01

The Shonka Research Associates, Inc. Position-Sensitive Radiation Monitor both detects surface radiation and prepares electronic survey map/survey report of surveyed area automatically. The electronically recorded map can be downloaded to a personal computer for review and a map/report can be generated for inclusion in work packages. Switching from beta-gamma detection to alpha detection is relatively simple and entails moving a switch position to alpha and adjusting the voltage level to an alpha detection level. No field calibration is required when switching from beta-gamma to alpha detection. The system can be used for free-release surveys because it meets the federal detection level sensitivity limits requires for surface survey instrumentation. This technology is superior to traditionally-used floor contamination monitor (FCM) and hand-held survey instrumentation because it can precisely register locations of radioactivity and accurately correlate contamination levels to specific locations. Additionally, it can collect and store continuous radiological data in database format, which can be used to produce real-time imagery as well as automated graphics of survey data. Its flexible design can accommodate a variety of detectors. The cost of the innovative technology is 13% to 57% lower than traditional methods. This technology is suited for radiological surveys of flat surfaces at US Department of Energy (DOE) nuclear facility decontamination and decommissioning (D and D) sites or similar public or commercial sites

Position-sensitive radiation monitoring (surface contamination monitor). Innovative technology summary report

Energy Technology Data Exchange (ETDEWEB)

1999-06-01

The Shonka Research Associates, Inc. Position-Sensitive Radiation Monitor both detects surface radiation and prepares electronic survey map/survey report of surveyed area automatically. The electronically recorded map can be downloaded to a personal computer for review and a map/report can be generated for inclusion in work packages. Switching from beta-gamma detection to alpha detection is relatively simple and entails moving a switch position to alpha and adjusting the voltage level to an alpha detection level. No field calibration is required when switching from beta-gamma to alpha detection. The system can be used for free-release surveys because it meets the federal detection level sensitivity limits requires for surface survey instrumentation. This technology is superior to traditionally-used floor contamination monitor (FCM) and hand-held survey instrumentation because it can precisely register locations of radioactivity and accurately correlate contamination levels to specific locations. Additionally, it can collect and store continuous radiological data in database format, which can be used to produce real-time imagery as well as automated graphics of survey data. Its flexible design can accommodate a variety of detectors. The cost of the innovative technology is 13% to 57% lower than traditional methods. This technology is suited for radiological surveys of flat surfaces at US Department of Energy (DOE) nuclear facility decontamination and decommissioning (D and D) sites or similar public or commercial sites.

Iron and its complexes in silicon

Science.gov (United States)

Istratov, A. A.; Hieslmair, H.; Weber, E. R.

This article is the first in a series of two reviews on the properties of iron in silicon. It offers a comprehensive of the current state of understanding of fundamental physical properties of iron and its complexes in silicon. The first section of this review discusses the position of iron in the silicon lattice and the electrical properties of interstitial iron. Updated expressions for the solubility and the diffusivity of iron in silicon are presented, and possible explanations for conflicting experimental data obtained by different groups are discussed. The second section of the article considers the electrical and the structural properties of complexes of interstitial iron with shallow acceptors (boron, aluminum, indium, gallium, and thallium), shallow donors (phosphorus and arsenic) and other impurities (gold, silver, platinum, palladium, zinc, sulfur, oxygen, carbon, and hydrogen). Special attention is paid to the kinetics of iron pairing with shallow acceptors, the dissociation of these pairs, and the metastability of iron-acceptor pairs. The parameters of iron-related defects in silicon are summarized in tables that include more than 30 complexes of iron as detected by electron paramagnetic resonance (EPR) and almost 20 energy levels in the band gap associated with iron. The data presented in this review illustrate the enormous complexing activity of iron, which is attributed to the partial or complete (depending on the temperature and the conductivity type) ionization of iron as well as the high diffusivity of iron in silicon. It is shown that studies of iron in silicon require exceptional cleanliness of experimental facilities and highly reproducible diffusion and temperature ramping (quenching) procedures. Properties of iron that are not yet completely understood and need further research are outlined.

Beam position monitor sensitivity for low-β beams

International Nuclear Information System (INIS)

Shafer, R.E.

1993-01-01

At low velocities, the EM field of a particle in a conducting beam tube is no longer a TEM wave, but has a finite longitudinal extent. The net effect of this is to reduce the coupling of the high-frequency Fourier components of the beam current to BPM (beam position monitor) electrodes, which modifies the BPM sensitivity to beam displacement. This effect is especially pronounced for high-frequency, large-aperture pickups used for low-β beams. Non-interceptive beam position monitors used in conjunction with high frequency RFQ (radio-frequency-quadrupole) and DTL (drift-tube-linac) accelerators fall into this category. When testing a BPM with a thin wire excited with either pulses or high-frequency sinusoidal currents, the EM wave represents the principal (TEM) mode in a coaxial transmission line, which is equivalent to a highly relativistic (β = 1) beam. Thus wire measurements are not suitable for simulating slow particle beams in high bandwidth diagnostic devices that couple to the image currents in the beam tube wall. Attempts to load the tin wire either capacitively or inductively to slow the EM wave down have met with limited success. In general, the equations used to represent the 2-D response of cylindrical-geometry BPMs to charged-particle beams make several assumptions: (1) the BPM electrodes are flush with and grounded to the surface of the conducting beam tube; (2) the beam is a line source (pencil beam); (3) the longitudinal extent of the EM field of a beam particle at the beam tube wall is zero, corresponding to a highly relativistic beam. The purpose of this paper is to make some quantitative estimates of the corrections to the conventional approximations when a BPM is used to measure the position of low velocity (low-β) beams

Production of electronic grade lunar silicon by disproportionation of silicon difluoride

Science.gov (United States)

Agosto, William N.

1993-01-01

Waldron has proposed to extract lunar silicon by sodium reduction of sodium fluorosilicate derived from reacting sodium fluoride with lunar silicon tetrafluoride. Silicon tetrafluoride is obtained by the action of hydrofluoric acid on lunar silicates. While these reactions are well understood, the resulting lunar silicon is not likely to meet electronic specifications of 5 nines purity. Dale and Margrave have shown that silicon difluoride can be obtained by the action of silicon tetrafluoride on elemental silicon at elevated temperatures (1100-1200 C) and low pressures (1-2 torr). The resulting silicon difluoride will then spontaneously disproportionate into hyperpure silicon and silicon tetrafluoride in vacuum at approximately 400 C. On its own merits, silicon difluoride polymerizes into a tough waxy solid in the temperature range from liquid nitrogen to about 100 C. It is the silicon analog of teflon. Silicon difluoride ignites in moist air but is stable under lunar surface conditions and may prove to be a valuable industrial material that is largely lunar derived for lunar surface applications. The most effective driver for lunar industrialization may be the prospects for industrial space solar power systems in orbit or on the moon that are built with lunar materials. Such systems would require large quantities of electronic grade silicon or compound semiconductors for photovoltaics and electronic controls. Since silicon is the most abundant semimetal in the silicate portion of any solar system rock (approximately 20 wt percent), lunar silicon production is bound to be an important process in such a solar power project. The lunar silicon extraction process is discussed.

Observing the morphology of single-layered embedded silicon nanocrystals by using temperature-stable TEM membranes

Directory of Open Access Journals (Sweden)

Sebastian Gutsch

2015-04-01

Full Text Available We use high-temperature-stable silicon nitride membranes to investigate single layers of silicon nanocrystal ensembles by energy filtered transmission electron microscopy. The silicon nanocrystals are prepared from the precipitation of a silicon-rich oxynitride layer sandwiched between two SiO2 diffusion barriers and subjected to a high-temperature annealing. We find that such single layers are very sensitive to the annealing parameters and may lead to a significant loss of excess silicon. In addition, these ultrathin layers suffer from significant electron beam damage that needs to be minimized in order to image the pristine sample morphology. Finally we demonstrate how the silicon nanocrystal size distribution develops from a broad to a narrow log-normal distribution, when the initial precipitation layer thickness and stoichiometry are below a critical value.

Nitric oxide levels in the anterior chamber of vitrectomized eyes with silicon oil

Directory of Open Access Journals (Sweden)

Paulo Escarião

2013-10-01

Full Text Available PURPOSE: To investigate the nitric oxide levels in the anterior chamber of eyes who underwent pars plana vitrectomy (PPV with silicone oil. METHODS: Patients who underwent PPV with silicon oil injection, from february 2005 to august 2007, were selected. Nine patients (nine eyes participated in the study (five women and four men. Nitric oxide concentration was quantified after the aspiration of aqueous humor samples during the procedure of silicon oil removal. Data such as: oil emulsification; presence of oil in the anterior chamber; intraocular pressure and time with silicone oil were evaluated. Values of p <0.05 were considered to be statistically significant. RESULTS: A positive correlation between nitric oxide concentration and time with silicon oil in the vitreous cavity (r=0.799 was observed. The nitric oxide concentration was significantly higher (p=0.02 in patients with silicon oil more than 24 months (0.90µmol/ml ± 0.59, n=3 in the vitreous cavity comparing to patients with less than 24 months (0.19µmol/ml ± 0.10, n=6. CONCLUSION: A positive correlation linking silicone oil time in the vitreous cavity with the nitric oxide concentration in the anterior chamber was observed.

LHCb: Installation and operation of the LHCb Silicon Tracker detector

CERN Multimedia

Esperante Pereira, D

2009-01-01

The LHCb experiment has been designed to perform high-precision measurements of CP violation and rare decays of B hadrons. The construction and installation phases of the Silicon Tracker (ST) of the experiment were completed by early summer 2008. The LHCb Silicon Tracker sums up to a total sensitive area of about 12 m^2 using silicon micro-strip technology and withstands charged particle fluxes of up to 5 x 10^5cm^−2s^−1. We will report on the preparation of the detectors for the first LHC beams. Selected results from the commissioning in LHCb are shown, including the first beam-related events accumulated during LHC injection tests in September 2008. Lessons are drawn from the experience gathered during the installation and commissioning.

Laser shock ignition of porous silicon based nano-energetic films

International Nuclear Information System (INIS)

Plummer, A.; Gascooke, J.; Shapter, J.; Kuznetsov, V. A.; Voelcker, N. H.

2014-01-01

Nanoporous silicon films on a silicon wafer were loaded with sodium perchlorate and initiated using illumination with infrared laser pulses to cause laser thermal ignition and laser-generated shock waves. Using Photon Doppler Velocimetry, it was determined that these waves are weak stress waves with a threshold intensity of 131 MPa in the silicon substrate. Shock generation was achieved through confinement of a plasma, generated upon irradiation of an absorptive paint layer held against the substrate side of the wafer. These stress waves were below the threshold required for sample fracturing. Exploiting either the laser thermal or laser-generated shock mechanisms of ignition may permit use of pSi energetic materials in applications otherwise precluded due to their environmental sensitivity

Laser shock ignition of porous silicon based nano-energetic films

Energy Technology Data Exchange (ETDEWEB)

Plummer, A.; Gascooke, J.; Shapter, J. [School of Chemical and Physical Sciences, Flinders University, 5042, Bedford Park (Australia); Centre of Expertise in Energetic Materials (CEEM), Bedford Park (Australia); Kuznetsov, V. A., E-mail: nico.voelcker@unisa.edu.au, E-mail: Valerian.Kuznetsov@dsto.defence.gov.au [School of Chemical and Physical Sciences, Flinders University, 5042, Bedford Park (Australia); Centre of Expertise in Energetic Materials (CEEM), Bedford Park (Australia); Weapons and Combat Systems Division, Defence Science and Technology Organisation, Edinburgh 5111 (Australia); Voelcker, N. H., E-mail: nico.voelcker@unisa.edu.au, E-mail: Valerian.Kuznetsov@dsto.defence.gov.au [Mawson Institute, University of South Australia, 5095, Mawson Lakes (Australia)

2014-08-07

Nanoporous silicon films on a silicon wafer were loaded with sodium perchlorate and initiated using illumination with infrared laser pulses to cause laser thermal ignition and laser-generated shock waves. Using Photon Doppler Velocimetry, it was determined that these waves are weak stress waves with a threshold intensity of 131 MPa in the silicon substrate. Shock generation was achieved through confinement of a plasma, generated upon irradiation of an absorptive paint layer held against the substrate side of the wafer. These stress waves were below the threshold required for sample fracturing. Exploiting either the laser thermal or laser-generated shock mechanisms of ignition may permit use of pSi energetic materials in applications otherwise precluded due to their environmental sensitivity.

Porous-shaped silicon carbide ultraviolet photodetectors on porous silicon substrates

Energy Technology Data Exchange (ETDEWEB)

Naderi, N., E-mail: naderi.phd@gmail.com [Nano-Optoelectronics Research Laboratory, School of Physics, Universiti Sains Malaysia, 11800 USM, Penang (Malaysia); Hashim, M.R. [Nano-Optoelectronics Research Laboratory, School of Physics, Universiti Sains Malaysia, 11800 USM, Penang (Malaysia)

2013-03-05

Highlights: ► Porous-shaped silicon carbide thin film was deposited on porous silicon substrate. ► Thermal annealing was followed to enhance the physical properties of samples. ► Metal–semiconductor-metal ultraviolet detectors were fabricated on samples. ► The effect of annealing temperature on electrical performance of devices was studied. ► The efficiency of photodetectors was enhanced by annealing at elevated temperatures. -- Abstract: A metal–semiconductor-metal (MSM) ultraviolet photodetector was fabricated based on a porous-shaped structure of silicon carbide (SiC). For increasing the surface roughness of SiC and hence enhancing the light absorption effect in fabricated devices, porous silicon (PS) was chosen as a template; SiC was deposited on PS substrates via radio frequency magnetron sputtering. Therefore, the deposited layers followed the structural pattern of PS skeleton and formed a porous-shaped SiC layer on PS substrate. The structural properties of samples showed that the as-deposited SiC was amorphous. Thus, a post-deposition annealing process with elevated temperatures was required to convert its amorphous phase to crystalline phase. The morphology of the sputtered samples was examined via scanning electron and atomic force microscopies. The grain size and roughness of the deposited layers clearly increased upon an increase in the annealing temperature. The optical properties of sputtered SiC were enhanced due to applying high temperatures. The most intense photoluminescence peak was observed for the sample with 1200 °C of annealing temperature. For the metallization of the SiC substrates to fabricate MSM photodetectors, two interdigitated Schottky contacts of Ni with four fingers for each electrode were deposited onto all the porous substrates. The optoelectronic characteristics of MSM UV photodetectors with porous-shaped SiC substrates were studied in the dark and under UV illumination. The electrical characteristics of fabricated

Porous-shaped silicon carbide ultraviolet photodetectors on porous silicon substrates

International Nuclear Information System (INIS)

Naderi, N.; Hashim, M.R.

2013-01-01

Highlights: ► Porous-shaped silicon carbide thin film was deposited on porous silicon substrate. ► Thermal annealing was followed to enhance the physical properties of samples. ► Metal–semiconductor-metal ultraviolet detectors were fabricated on samples. ► The effect of annealing temperature on electrical performance of devices was studied. ► The efficiency of photodetectors was enhanced by annealing at elevated temperatures. -- Abstract: A metal–semiconductor-metal (MSM) ultraviolet photodetector was fabricated based on a porous-shaped structure of silicon carbide (SiC). For increasing the surface roughness of SiC and hence enhancing the light absorption effect in fabricated devices, porous silicon (PS) was chosen as a template; SiC was deposited on PS substrates via radio frequency magnetron sputtering. Therefore, the deposited layers followed the structural pattern of PS skeleton and formed a porous-shaped SiC layer on PS substrate. The structural properties of samples showed that the as-deposited SiC was amorphous. Thus, a post-deposition annealing process with elevated temperatures was required to convert its amorphous phase to crystalline phase. The morphology of the sputtered samples was examined via scanning electron and atomic force microscopies. The grain size and roughness of the deposited layers clearly increased upon an increase in the annealing temperature. The optical properties of sputtered SiC were enhanced due to applying high temperatures. The most intense photoluminescence peak was observed for the sample with 1200 °C of annealing temperature. For the metallization of the SiC substrates to fabricate MSM photodetectors, two interdigitated Schottky contacts of Ni with four fingers for each electrode were deposited onto all the porous substrates. The optoelectronic characteristics of MSM UV photodetectors with porous-shaped SiC substrates were studied in the dark and under UV illumination. The electrical characteristics of fabricated

Simulation of silicon microdosimetry spectra in fast neutron therapy using the GEANT4 Monte Carlo toolkit

International Nuclear Information System (INIS)

Cornelius, I.M.; Rosenfeld, A.B.

2003-01-01

Microdosimetry is used to predict the biological effects of the densely ionizing radiation environments of hadron therapy and space. The creation of a solid state microdosimeter to replace the conventional Tissue Equivalent Proportional Counter (TEPC) is a topic of ongoing research. The Centre for Medical Radiation Physics has been investigating a technique using microscopic arrays of reverse biased PN junctions. A prototype silicon-on-insulator (SOI) microdosimeter was developed and preliminary measurements have been conducted at several hadron therapy facilities. Several factors impede the application of silicon microdosimeters to hadron therapy. One of the major limitations is that of tissue equivalence, ideally the silicon microdosimeter should provide a microdosimetry distribution identical to that of a microscopic volume of tissue. For microdosimetry in neutron fields, such as Fast Neutron Therapy, it is important that products resulting from neutron interactions in the non tissue equivalent sensitive volume do not contribute significantly to the spectrum. Experimental measurements have been conducted at the Gershenson Radiation Oncology Center, Harper Hospital, Detroit by Bradley et al. The aim was to provide a comparison with measurements performed with a TEPC under identical experimental conditions. Monte Carlo based calculations of these measurements were made using the GEANT4 Monte Carlo toolkit. Agreement between experimental and theoretical results was observed. The model illustrated the importance of neutron interactions in the non tissue equivalent sensitive volume and showed this effect to decrease with sensitive volume size as expected. Simulations were also performed for 1 micron cubic silicon sensitive volumes embedded in tissue equivalent material to predict the best case scenario for silicon microdosimetry in Fast Neutron Therapy

Geochemistry of the stable isotopes of silicon

Energy Technology Data Exchange (ETDEWEB)

Douthitt, C B [California Inst. of Tech., Pasadena (USA). Div. of Geological and Planetary Sciences

1982-08-01

One hundred thirty two new measurements of the relative abundances of the stable isotopes of silicon in terrestrial materials are presented. The total variation of delta/sup 30/Si found is 6.2 parts per thousand, centered on the mean of terrestrial mafic and ultramafic igneous rocks, delta/sup 30/Si = -0.4 parts per thousand. Igneous rocks show limited variation; coexisting minerals exhibit small, systematic silicon isotopic fractionations that are roughly 1/3 the magnitude of concomitant oxygen isotopic fractionations at 1150/sup 0/C. In both igneous minerals and rocks, delta/sup 30/Si shows a positive correlation with silicon content, as does delta/sup 18/O. Opal from both sponge spicules and sinters is light, with delta/sup 30/Si = -2.3 and -1.4 parts per thousand respectively. Large delta/sup 30/Si values of both positive and negative sign are reported for the first time from clay minerals, opaline phytoliths, and authigenic quartz. All highly fractionated samples were precipitated from solution at low temperatures; however, aqueous silicon is not measurably fractionated relative to quartz at equilibrium. A kinetic isotope fractionation of approximately 3.5 parts per thousand is postulated to occur during the low temperature precipitation of opal and, possibly, poorly ordered phyllosilicates, with the silicate phase being enriched in /sup 28/Si. This fractionation, coupled with a Rayleigh precipitation model, is capable of explaining most non-magmatic delta/sup 30/Si variations.

The Silicon:Colloidal Quantum Dot Heterojunction

KAUST Repository

Masala, Silvia; Adinolfi, Valerio; Sun, Jon Paul; Del Gobbo, Silvano; Voznyy, Oleksandr; Kramer, Illan J.; Hill, Ian G.; Sargent, Edward H.

2015-01-01

A heterojunction between crystalline silicon and colloidal quantum dots (CQDs) is realized. A special interface modification is developed to overcome an inherent energetic band mismatch between the two semiconductors, and realize the efficient collection of infrared photocarriers generated in the CQD film. This junction is used to produce a sensitive near infrared photodetector. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

The Silicon:Colloidal Quantum Dot Heterojunction

KAUST Repository

Masala, Silvia

2015-10-13

A heterojunction between crystalline silicon and colloidal quantum dots (CQDs) is realized. A special interface modification is developed to overcome an inherent energetic band mismatch between the two semiconductors, and realize the efficient collection of infrared photocarriers generated in the CQD film. This junction is used to produce a sensitive near infrared photodetector. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

The mid-IR silicon photonics sensor platform (Conference Presentation)

Science.gov (United States)

Kimerling, Lionel; Hu, Juejun; Agarwal, Anuradha M.

2017-02-01

Advances in integrated silicon photonics are enabling highly connected sensor networks that offer sensitivity, selectivity and pattern recognition. Cost, performance and the evolution path of the so-called `Internet of Things' will gate the proliferation of these networks. The wavelength spectral range of 3-8um, commonly known as the mid-IR, is critical to specificity for sensors that identify materials by detection of local vibrational modes, reflectivity and thermal emission. For ubiquitous sensing applications in this regime, the sensors must move from premium to commodity level manufacturing volumes and cost. Scaling performance/cost is critically dependent on establishing a minimum set of platform attributes for point, wearable, and physical sensing. Optical sensors are ideal for non-invasive applications. Optical sensor device physics involves evanescent or intra-cavity structures for applied to concentration, interrogation and photo-catalysis functions. The ultimate utility of a platform is dependent on sample delivery/presentation modalities; system reset, recalibration and maintenance capabilities; and sensitivity and selectivity performance. The attributes and performance of a unified Glass-on-Silicon platform has shown good prospects for heterogeneous integration on materials and devices using a low cost process flow. Integrated, single mode, silicon photonic platforms offer significant performance and cost advantages, but they require discovery and qualification of new materials and process integration schemes for the mid-IR. Waveguide integrated light sources based on rare earth dopants and Ge-pumped frequency combs have promise. Optical resonators and waveguide spirals can enhance sensitivity. PbTe materials are among the best choices for a standard, waveguide integrated photodetector. Chalcogenide glasses are capable of transmitting mid-IR signals with high transparency. Integrated sensor case studies of i) high sensitivity analyte detection in

Sensitivity, Specificity, and Positivity Predictors of the Pneumococcal Urinary Antigen Test in Community-Acquired Pneumonia.

Science.gov (United States)

Molinos, Luis; Zalacain, Rafael; Menéndez, Rosario; Reyes, Soledad; Capelastegui, Alberto; Cillóniz, Catia; Rajas, Olga; Borderías, Luis; Martín-Villasclaras, Juan J; Bello, Salvador; Alfageme, Inmaculada; Rodríguez de Castro, Felipe; Rello, Jordi; Ruiz-Manzano, Juan; Gabarrús, Albert; Musher, Daniel M; Torres, Antoni

2015-10-01

Detection of the C-polysaccharide of Streptococcus pneumoniae in urine by an immune-chromatographic test is increasingly used to evaluate patients with community-acquired pneumonia. We assessed the sensitivity and specificity of this test in the largest series of cases to date and used logistic regression models to determine predictors of positivity in patients hospitalized with community-acquired pneumonia. We performed a multicenter, prospective, observational study of 4,374 patients hospitalized with community-acquired pneumonia. The urinary antigen test was done in 3,874 cases. Pneumococcal infection was diagnosed in 916 cases (21%); 653 (71%) of these cases were diagnosed exclusively by the urinary antigen test. Sensitivity and specificity were 60 and 99.7%, respectively. Predictors of urinary antigen positivity were female sex; heart rate≥125 bpm, systolic blood pressureantibiotic treatment; pleuritic chest pain; chills; pleural effusion; and blood urea nitrogen≥30 mg/dl. With at least six of all these predictors present, the probability of positivity was 52%. With only one factor present, the probability was only 12%. The urinary antigen test is a method with good sensitivity and excellent specificity in diagnosing pneumococcal pneumonia, and its use greatly increased the recognition of community-acquired pneumonia due to S. pneumoniae. With a specificity of 99.7%, this test could be used to direct simplified antibiotic therapy, thereby avoiding excess costs and risk for bacterial resistance that result from broad-spectrum antibiotics. We also identified predictors of positivity that could increase suspicion for pneumococcal infection or avoid the unnecessary use of this test.

Experimental studies on using silicon photodiode as read-out component of CsI(Tl) crystal

International Nuclear Information System (INIS)

He Jingtang; Chen Duanbao; Li Zuhao; Mao Yufang; Dong Xiaoli

1996-01-01

Experimental studies on using silicon photodiode as the read-out component of CsI(Tl) crystal are reported. The read-out properties of two different types of silicon photodiode produced by Hamamatsu were measured, including relations between energy resolution and bias, shaping time, sensitive area of photodiode and the dimension of the crystal

Range position and climate sensitivity: The structure of among-population demographic responses to climatic variation

Science.gov (United States)

Amburgey, Staci M.; Miller, David A. W.; Grant, Evan H. Campbell; Rittenhouse, Tracy A. G.; Benard, Michael F.; Richardson, Jonathan L.; Urban, Mark C.; Hughson, Ward; Brand, Adrianne B,; Davis, Christopher J.; Hardin, Carmen R.; Paton, Peter W. C.; Raithel, Christopher J.; Relyea, Rick A.; Scott, A. Floyd; Skelly, David K.; Skidds, Dennis E.; Smith, Charles K.; Werner, Earl E.

2018-01-01

Species’ distributions will respond to climate change based on the relationship between local demographic processes and climate and how this relationship varies based on range position. A rarely tested demographic prediction is that populations at the extremes of a species’ climate envelope (e.g., populations in areas with the highest mean annual temperature) will be most sensitive to local shifts in climate (i.e., warming). We tested this prediction using a dynamic species distribution model linking demographic rates to variation in temperature and precipitation for wood frogs (Lithobates sylvaticus) in North America. Using long-term monitoring data from 746 populations in 27 study areas, we determined how climatic variation affected population growth rates and how these relationships varied with respect to long-term climate. Some models supported the predicted pattern, with negative effects of extreme summer temperatures in hotter areas and positive effects on recruitment for summer water availability in drier areas. We also found evidence of interacting temperature and precipitation influencing population size, such as extreme heat having less of a negative effect in wetter areas. Other results were contrary to predictions, such as positive effects of summer water availability in wetter parts of the range and positive responses to winter warming especially in milder areas. In general, we found wood frogs were more sensitive to changes in temperature or temperature interacting with precipitation than to changes in precipitation alone. Our results suggest that sensitivity to changes in climate cannot be predicted simply by knowing locations within the species’ climate envelope. Many climate processes did not affect population growth rates in the predicted direction based on range position. Processes such as species-interactions, local adaptation, and interactions with the physical landscape likely affect the responses we observed. Our work highlights the

Face Inversion Disproportionately Disrupts Sensitivity to Vertical over Horizontal Changes in Eye Position

Science.gov (United States)

Crookes, Kate; Hayward, William G.

2012-01-01

Presenting a face inverted (upside down) disrupts perceptual sensitivity to the spacing between the features. Recently, it has been shown that this disruption is greater for vertical than horizontal changes in eye position. One explanation for this effect proposed that inversion disrupts the processing of long-range (e.g., eye-to-mouth distance)…

Interaction between rare-earth ions and amorphous silicon nanoclusters produced at low processing temperatures

Energy Technology Data Exchange (ETDEWEB)

Meldrum, A. [Department of Physics, University of Alberta, Edmonton, T6G2J1 (Canada)]. E-mail: ameldrum@ualberta.ca; Hryciw, A. [Department of Physics, University of Alberta, Edmonton, T6G2J1 (Canada); MacDonald, A.N. [Department of Physics, University of Alberta, Edmonton, T6G2J1 (Canada); Blois, C. [Department of Physics, University of Alberta, Edmonton, T6G2J1 (Canada); Clement, T. [Department of Electrical and Computer Engineering, University of Alberta, Edmonton, T6G2V4 (Canada); De Corby, R. [Department of Electrical and Computer Engineering, University of Alberta, Edmonton, T6G2V4 (Canada); Wang, J. [Department of Physics, Chinese University of Hong Kong, Shatin, Hong Kong (China); Li Quan [Department of Physics, Chinese University of Hong Kong, Shatin, Hong Kong (China)

2006-12-15

Temperatures of 1000 deg. C and higher are a significant problem for the incorporation of erbium-doped silicon nanocrystal devices into standard silicon technology, and make the fabrication of contacts and reflectors in light emitting devices difficult. In the present work, we use energy-filtered TEM imaging techniques to show the formation of size-controlled amorphous silicon nanoclusters in SiO films annealed between 400 and 500 deg. C. The PL properties of such films are characteristic of amorphous silicon, and the spectrum can be controlled via a statistical size effect-as opposed to quantum confinement-that has previously been proposed for porous amorphous silicon. Finally, we show that amorphous nanoclusters sensitize the luminescence from the rare-earth ions Er, Nd, Yb, and Tm with excitation cross-sections similar in magnitude to erbium-doped silicon nanocrystal composites, and with a similar nonresonant energy transfer mechanism.

Simultaneous alignment and Lorentz angle calibration in the CMS silicon tracker using Millepede II

CERN Document Server

Bartosik, Nazar

2013-01-01

The CMS silicon tracker consists of 25 684 sensors that provide measurements of trajectories of charged particles that are used by almost every physics analysis at CMS. In order to achieve high measurement precision, the positions and orientations of all sensors have to be determined very accurately. This is achieved by track-based alignment using the global fit approach of the Millepede II program. This approach is capable of determining about 200 000 parameters simultaneously.The alignment precision reached such a high level that even small calibration inaccuracies are noticeable. Therefore the alignment framework has been extended to treat position sensitive calibration parameters. Of special interest is the Lorentz angle which affects the hit positions due to the drift of the signal electrons in the magnetic field. We present the results from measurements of the Lorentz angle and its time dependence during full 2012 data taking period as well as general description of the alignment and calibration procedu...

Towards highly sensitive strain sensing based on nanostructured materials

International Nuclear Information System (INIS)

Dao, Dzung Viet; Nakamura, Koichi; Sugiyama, Susumu; Bui, Tung Thanh; Dau, Van Thanh; Yamada, Takeo; Hata, Kenji

2010-01-01

This paper presents our recent theoretical and experimental study of piezo-effects in nanostructured materials for highly sensitive, high resolution mechanical sensors. The piezo-effects presented here include the piezoresistive effect in a silicon nanowire (SiNW) and single wall carbon nanotube (SWCNT) thin film, as well as the piezo-optic effect in a Si photonic crystal (PhC) nanocavity. Firstly, the electronic energy band structure of the silicon nanostructure is discussed and simulated by using the First-Principles Calculations method. The result showed a remarkably different energy band structure compared with that of bulk silicon. This difference in the electronic state will result in different physical, chemical, and therefore, sensing properties of silicon nanostructures. The piezoresistive effects of SiNW and SWCNT thin film were investigated experimentally. We found that, when the width of ( 110 ) p-type SiNW decreases from 500 to 35 nm, the piezoresistive effect increases by more than 60%. The longitudinal piezoresistive coefficient of SWCNT thin film was measured to be twice that of bulk p-type silicon. Finally, theoretical investigations of the piezo-optic effect in a PhC nanocavity based on Finite Difference Time Domain (FDTD) showed extremely high resolution strain sensing. These nanostructures were fabricated based on top-down nanofabrication technology. The achievements of this work are significant for highly sensitive, high resolution and miniaturized mechanical sensors

Colloidal characterization of ultrafine silicon carbide and silicon nitride powders

Science.gov (United States)

Whitman, Pamela K.; Feke, Donald L.

1986-01-01

The effects of various powder treatment strategies on the colloid chemistry of aqueous dispersions of silicon carbide and silicon nitride are examined using a surface titration methodology. Pretreatments are used to differentiate between the true surface chemistry of the powders and artifacts resulting from exposure history. Silicon nitride powders require more extensive pretreatment to reveal consistent surface chemistry than do silicon carbide powders. As measured by titration, the degree of proton adsorption from the suspending fluid by pretreated silicon nitride and silicon carbide powders can both be made similar to that of silica.

Neutron damage of silicon detectors at 20 deg C

International Nuclear Information System (INIS)

Bardos, R.; Gorfine, G.; Guy, L.; Moorhead, G.; Taylor, G.; Tovey, S.

1992-01-01

This contribution reports new data on the damage of silicon detectors by low energy (1 MeV) neutrons. The data were taken at the end of 1991. Three exposures of UA2 Inner Silicon detectors were made: at +20 deg C, -15 deg C and -95 deg C. A high neutron flux enabled the required fluences to be achieved in relatively short times. This increases the sensitivity of the experiment to damage types with shorter self-annealing time constants. This note discusses the new data taken at +20 deg C. Analysis of the low temperature exposures is in progress. 5 refs., 15 figs

The geochemistry of the stable isotopes of silicon

International Nuclear Information System (INIS)

Douthitt, C.B.

1982-01-01

One hundred thirty two new measurements of the relative abundances of the stable isotopes of silicon in terrestrial materials are presented. The total variation of delta 30 Si found is 6.2 parts per thousand, centered on the mean of terrestrial mafic and ultramafic igneous rocks, delta 30 Si = -0.4 parts per thousand. Igneous rocks show limited variation; coexisting minerals exhibit small, systematic silicon isotopic fractionations that are roughly 1/3 the magnitude of concomitant oxygen isotopic fractionations at 1150 0 C. In both igneous minerals and rocks, delta 30 Si shows a positive correlation with silicon content, as does delta 18 O. Opal from both sponge spicules and sinters is light, with delta 30 Si = -2.3 and -1.4 parts per thousand respectively. Large delta 30 Si values of both positive and negative sign are reported for the first time from clay minerals, opaline phytoliths, and authigenic quartz. All highly fractionated samples were precipitated from solution at low temperatures; however, aqueous silicon is not measurably fractionated relative to quartz at equilibrium. A kinetic isotope fractionation of approximately 3.5 parts per thousand is postulated to occur during the low temperature precipitation of opal and, possibly, poorly ordered phyllosilicates, with the silicate phase being enriched in 28 Si. This fractionation, coupled with a Rayleigh precipitation model, is capable of explaining most non-magmatic delta 30 Si variations. (author)

Installation of the light tight cover for the SSD modules (the modules are behind the aluminium plate). The silicon sensors are sensitive to light tight, so ambient light will increase the noise and may even damage them.

CERN Multimedia

Nooren, G.

2004-01-01

Installation of the light tight cover for the SSD modules (the modules are behind the aluminium plate). The silicon sensors are sensitive to light tight , so ambient light will increase the noise and may even damage them.

High resolution, position sensitive detector for energetic particle beams

International Nuclear Information System (INIS)

Marsh, E.P.; Strathman, M.D.; Reed, D.A.; Odom, R.W.; Morse, D.H.; Pontau, A.E.

1993-01-01

The performance and design of an imaging position sensitive, particle beam detector will be presented. The detector is minimally invasive, operates a wide dynamic range (>10 10 ), and exhibits high spatial resolution. The secondary electrons produced when a particle beam passes through a thin foil are imaged using stigmatic ion optics onto a two-dimensional imaging detector. Due to the low scattering cross section of the 6 nm carbon foil the detector is a minimal perturbation on the primary beam. A prototype detector with an image resolution of approximately 5 μm for a field of view of 1 mm has been reported. A higher resolution detector for imaging small beams (<50 μm) with an image resolution of better than 0.5 μm has since been developed and its design is presented. (orig.)

Radiation-hard silicon photonics for high energy physics and beyond

CERN Multimedia

CERN. Geneva

2016-01-01

Silicon photonics (SiPh) is currently being investigated as a promising technology for future radiation hard optical links. The possibility of integrating SiPh devices with electronics and/or silicon particle sensors as well as an expected very high resistance against radiation damage make this technology particularly interesting for potential use close to the interaction points in future in high energy physics experiments and other radiation-sensitive applications. The presentation will summarize the outcomes of the research on radiation hard SiPh conducted within the ICE-DIP projected.

Silicon nanomaterials platform for bioimaging, biosensing, and cancer therapy.

Science.gov (United States)

Peng, Fei; Su, Yuanyuan; Zhong, Yiling; Fan, Chunhai; Lee, Shuit-Tong; He, Yao

2014-02-18

biomedical applications, including biosensor, bioimaging, and cancer therapy. First, we show that the interesting photoluminescence properties (e.g., strong fluorescence and robust photostability) and excellent biocompatibility of silicon nanoparticles (SiNPs) are superbly suitable for direct and long-term visualization of biological systems. The strongly fluorescent SiNPs are highly effective for bioimaging applications, especially for long-term cellular labeling, cancer cell detection, and tumor imaging in vitro and in vivo with high sensitivity. Next, we discuss the utilization of silicon nanomaterials to construct high-performance biosensors, such as silicon-based field-effect transistors (FET) and surface-enhanced Raman scattering (SERS) sensors, which hold great promise for ultrasensitive and selective detection of biological species (e.g., DNA and protein). Then, we introduce recent exciting research findings on the applications of silicon nanomaterials for cancer therapy with encouraging therapeutic outcomes. Lastly, we highlight the major challenges and promises in this field, and the prospect of a new nanobiotechnology platform based on silicon nanomaterials.

Er sensitization by a thin Si layer: Interaction-distance dependence

DEFF Research Database (Denmark)

Julsgaard, Brian; Lu, Ying-Wei; Jensen, Rasmus Vincentz Skougaard

2011-01-01

From photoluminescence measurements on sensitized erbium in a-Si/SiO2:Er/SiO2 multilayers, we determine the characteristic interaction length of the sensitization process from the silicon-layer sensitizer to the erbium-ion receiver to be 0.22±0.02 nm. By using sufficiently low temperatures in the...

All-Optical 40 Gbit/s Regenerative Wavelength Conversion Based on Cross-Phase Modulation in a Silicon Nanowire

DEFF Research Database (Denmark)

Jensen, Asger Sellerup; Hu, Hao; Ji, Hua

2013-01-01

We successfully demonstrate all-optical regeneration of a 40 Gbit/s signal based on cross-phase modulation in a silicon nanowire. Bit-error-rate measurements show an average of 1.7dB improvement in receiver sensitivity after the regeneration.......We successfully demonstrate all-optical regeneration of a 40 Gbit/s signal based on cross-phase modulation in a silicon nanowire. Bit-error-rate measurements show an average of 1.7dB improvement in receiver sensitivity after the regeneration....

Fabrication and Characterization of Dye-Sensitized Solar Cells

OpenAIRE

Mohamed FATHALLAH; Ahmed TORCHANI; Rached GHARBI

2014-01-01

Dye-sensitized solar cell (DSSC) constitutes a real revolution in the conversion of solar energy into electricity after 40 years of the invention of silicon solar cells. The working mechanism is based on a photoelectrochemical system, similar to the photosynthesis in plant leaves. The efficiencies of the DSSC are high as those obtained from amorphous silicon solar cells (10-11 %) and intensive efforts are done in different directions to improve this efficiency.

Fabrication and Characterization of Dye-Sensitized Solar Cells

Directory of Open Access Journals (Sweden)

Mohamed FATHALLAH

2014-05-01

Full Text Available Dye-sensitized solar cell (DSSC constitutes a real revolution in the conversion of solar energy into electricity after 40 years of the invention of silicon solar cells. The working mechanism is based on a photoelectrochemical system, similar to the photosynthesis in plant leaves. The efficiencies of the DSSC are high as those obtained from amorphous silicon solar cells (10-11 % and intensive efforts are done in different directions to improve this efficiency.

Arsenic implantation into polycrystalline silicon and diffusion to silicon substrate

International Nuclear Information System (INIS)

Tsukamoto, K.; Akasaka, Y.; Horie, K.

1977-01-01

Arsenic implantation into polycrystalline silicon and drive-in diffusion to silicon substrate have been investigated by MeV He + backscattering analysis and also by electrical measurements. The range distributions of arsenic implanted into polycrystalline silicon are well fitted to Gaussian distributions over the energy range 60--350 keV. The measured values of R/sub P/ and ΔR/sub P/ are about 10 and 20% larger than the theoretical predictions, respectively. The effective diffusion coefficient of arsenic implanted into polycrystalline silicon is expressed as D=0.63 exp[(-3.22 eV/kT)] and is independent of the arsenic concentration. The drive-in diffusion of arsenic from the implanted polycrystalline silicon layer into the silicon substrate is significantly affected by the diffusion atmosphere. In the N 2 atmosphere, a considerable amount of arsenic atoms diffuses outward to the ambient. The outdiffusion can be suppressed by encapsulation with Si 3 N 4 . In the oxidizing atmosphere, arsenic atoms are driven inward by growing SiO 2 due to the segregation between SiO 2 and polycrystalline silicon, and consequently the drive-in diffusion of arsenic is enhanced. At the interface between the polycrystalline silicon layer and the silicon substrate, arsenic atoms are likely to segregate at the polycrystalline silicon side

Interference coupling mechanisms in Silicon Strip Detectors - CMS tracker "wings" A learned lesson for SLHC

CERN Document Server

Arteche, F; Rivetta, C

2009-01-01

The identification of coupling mechanisms between noise sources and sensitive areas of the front-end electronics (FEE) in the previous CMS tracker sub-system is critical to optimize the design and integration of integrated circuits, sensors and power distribution circuitry for the proposed SLHC Silicon Strip Tracker systems. This paper presents a validated model of the noise sensitivity observed in the Silicon Strip Detector-FEE of the CMS tracker that allows quantifying both the impact of the noise coupling mechanisms and the system immunity against electromagnetic interferences. This model has been validated based on simulations using finite element models and immunity tests conducted on prototypes of the Silicon Tracker End-Caps (TEC) and Outer Barrel (TOB) systems. The results of these studies show important recommendations and criteria to be applied in the design of future detectors to increase the immunity against electromagnetic noise.

Four-channel readout ASIC for silicon pad detectors

International Nuclear Information System (INIS)

Baturitsky, M.A.; Zamiatin, N.I.

2000-01-01

A custom front-end readout ASIC has been designed for silicon calorimeters supposed to be used in high-energy physics experiments. The ASIC was produced using BJT-JFET technology. It contains four channels of a fast low-noise charge-sensitive preamplifier (CSP) with inverting outputs summed by a linear adder (LA) followed by an RC-CR shaping amplifier (SA) with 30 ns peaking time. Availability of separate outputs of the CSPs and the LA makes it possible to join any number of silicon detector layers to obtain the longitudinal and transversal resolution required using only this ASIC in any silicon calorimeter minitower configuration. Noise performance is ENC=1800e - +18e - /pF at 30 ns peaking time for detector capacitance up to C d =400 pF. Rise time is 8 ns at input capacitance C d =100 pF. Power dissipation is less than 50 mW/ chip at voltage supply 5 V

Porous silicon: silicon quantum dots for photonic applications

International Nuclear Information System (INIS)

Pavesi, L.; Guardini, R.

1996-01-01

Porous silicon formation and structure characterization are briefly illustrated. Its luminescence properties rae presented and interpreted on the basis of exciton recombination in quantum dot structures: the trap-controlled hopping mechanism is used to describe the recombination dynamics. Porous silicon application to photonic devices is considered: porous silicon multilayer in general, and micro cavities in particular are described. The present situation in the realization of porous silicon LEDs is considered, and future developments in this field of research are suggested. (author). 30 refs., 30 figs., 13 tabs

First charge collection and position-precision data on the medium-resistivity silicon strip detectors before and after neutron irradiation up to 2x1014 n/cm2

International Nuclear Information System (INIS)

Li Zheng; Dezillie, B.; Eremin, V.; Li, C.J.; Verbitskaya, E.

1999-01-01

Test strip detectors of 125 μm, 500 μm, and 1 mm pitches with about 1 cm 2 areas have been made on medium-resistivity silicon wafers (1.3 and 2.7 kΩ cm). Detectors of 500 μm pitch have been tested for charge collection and position precision before and after neutron irradiation (up to 2x10 14 n/cm 2 ) using 820 and 1030 nm laser lights with different beam-spot sizes. It has been found that for a bias of 250 V a strip detector made of 1.3 kΩ cm (300 μm thick) can be fully depleted before and after an irradiation of 2x10 14 n/cm 2 . For a 500 μm pitch strip detector made of 2.7 kΩ cm tested with an 1030 nm laser light with 200 μm spot size, the position reconstruction error is about 14 μm before irradiation, and 17 μm after about 1.7x10 13 n/cm 2 irradiation. We demonstrated in this work that medium resistivity silicon strip detectors can work just as well as the traditional high-resistivity ones, but with higher radiation tolerance. We also tested charge sharing and position reconstruction using a 1030 nm wavelength (300 μm absorption length in Si at RT) laser, which provides a simulation of MIP particles in high-physics experiments in terms of charge collection and position reconstruction

Silicon-Rich Silicon Carbide Hole-Selective Rear Contacts for Crystalline-Silicon-Based Solar Cells.

Science.gov (United States)

Nogay, Gizem; Stuckelberger, Josua; Wyss, Philippe; Jeangros, Quentin; Allebé, Christophe; Niquille, Xavier; Debrot, Fabien; Despeisse, Matthieu; Haug, Franz-Josef; Löper, Philipp; Ballif, Christophe

2016-12-28

The use of passivating contacts compatible with typical homojunction thermal processes is one of the most promising approaches to realizing high-efficiency silicon solar cells. In this work, we investigate an alternative rear-passivating contact targeting facile implementation to industrial p-type solar cells. The contact structure consists of a chemically grown thin silicon oxide layer, which is capped with a boron-doped silicon-rich silicon carbide [SiC x (p)] layer and then annealed at 800-900 °C. Transmission electron microscopy reveals that the thin chemical oxide layer disappears upon thermal annealing up to 900 °C, leading to degraded surface passivation. We interpret this in terms of a chemical reaction between carbon atoms in the SiC x (p) layer and the adjacent chemical oxide layer. To prevent this reaction, an intrinsic silicon interlayer was introduced between the chemical oxide and the SiC x (p) layer. We show that this intrinsic silicon interlayer is beneficial for surface passivation. Optimized passivation is obtained with a 10-nm-thick intrinsic silicon interlayer, yielding an emitter saturation current density of 17 fA cm -2 on p-type wafers, which translates into an implied open-circuit voltage of 708 mV. The potential of the developed contact at the rear side is further investigated by realizing a proof-of-concept hybrid solar cell, featuring a heterojunction front-side contact made of intrinsic amorphous silicon and phosphorus-doped amorphous silicon. Even though the presented cells are limited by front-side reflection and front-side parasitic absorption, the obtained cell with a V oc of 694.7 mV, a FF of 79.1%, and an efficiency of 20.44% demonstrates the potential of the p + /p-wafer full-side-passivated rear-side scheme shown here.

Reduced Moment-Based Models for Oxygen Precipitates and Dislocation Loops in Silicon

Science.gov (United States)

Trzynadlowski, Bart

The demand for ever smaller, higher-performance integrated circuits and more efficient, cost-effective solar cells continues to push the frontiers of process technology. Fabrication of silicon devices requires extremely precise control of impurities and crystallographic defects. Failure to do so not only reduces performance, efficiency, and yield, it threatens the very survival of commercial enterprises in today's fiercely competitive and price-sensitive global market. The presence of oxygen in silicon is an unavoidable consequence of the Czochralski process, which remains the most popular method for large-scale production of single-crystal silicon. Oxygen precipitates that form during thermal processing cause distortion of the surrounding silicon lattice and can lead to the formation of dislocation loops. Localized deformation caused by both of these defects introduces potential wells that trap diffusing impurities such as metal atoms, which is highly desirable if done far away from sensitive device regions. Unfortunately, dislocations also reduce the mechanical strength of silicon, which can cause wafer warpage and breakage. Engineers must negotiate this and other complex tradeoffs when designing fabrication processes. Accomplishing this in a complex, modern process involving a large number of thermal steps is impossible without the aid of computational models. In this dissertation, new models for oxygen precipitation and dislocation loop evolution are described. An oxygen model using kinetic rate equations to evolve the complete precipitate size distribution was developed first. This was then used to create a reduced model tracking only the moments of the size distribution. The moment-based model was found to run significantly faster than its full counterpart while accurately capturing the evolution of oxygen precipitates. The reduced model was fitted to experimental data and a sensitivity analysis was performed to assess the robustness of the results. Source

Microscopic models of impurities in silicon

International Nuclear Information System (INIS)

Assali, L.V.C.

1985-01-01

The study of electronic structure of insulated and complex puntual impurities in silicon responsible by the appearing of deep energy levels in the forbiden band of semiconductor, is presented. The molecular cluster model with the treatment of surface orbitals by Watson sphere within the formalism of Xα multiple scattering method, was used. The electronic structures of three clusters representative of perfect silicon crystal, which were used for the impurity studies, are presented. The method was applied to analyse insulated impurities of substitutional and interstitial hydrogen (Si:H and Si:H i ), subtitutional and interstitial iron in neutral and positive charge states (Si:Fe 0 , + , Si:Fe 0 , + ) and substitutional gold in three charge states(Si,Au - , 0 , + ). The thetraedic interstitial defect of silicon (Si:Si i ) was also studied. The complex impurities: neighbour iron pair in the lattice (Si:Fe 2 ), substitutional gold-interstitial iron pair (Si:Au s Fe) and substitutional boron-interstitial hydrogen pair (Si:B s H i ), were analysed. (M.C.K.) [pt

The CMS all silicon Tracker simulation

CERN Document Server

Biasini, Maurizio

2009-01-01

The Compact Muon Solenoid (CMS) tracker detector is the world's largest silicon detector with about 201 m$^2$ of silicon strips detectors and 1 m$^2$ of silicon pixel detectors. It contains 66 millions pixels and 10 million individual sensing strips. The quality of the physics analysis is highly correlated with the precision of the Tracker detector simulation which is written on top of the GEANT4 and the CMS object-oriented framework. The hit position resolution in the Tracker detector depends on the ability to correctly model the CMS tracker geometry, the signal digitization and Lorentz drift, the calibration and inefficiency. In order to ensure high performance in track and vertex reconstruction, an accurate knowledge of the material budget is therefore necessary since the passive materials, involved in the readout, cooling or power systems, will create unwanted effects during the particle detection, such as multiple scattering, electron bremsstrahlung and photon conversion. In this paper, we present the CM...

The BaBar silicon vertex tracker, performance and running experience

CERN Document Server

Re, V; Bozzi, C; Carassiti, V; Cotta-Ramusino, A; Piemontese, L; Breon, A B; Brown, D; Clark, A R; Goozen, F; Hernikl, C; Kerth, L T; Gritsan, A; Lynch, G; Perazzo, A; Roe, N A; Zizka, G; Roberts, D; Schieck, J; Brenna, E; Citterio, M; Lanni, F; Palombo, F; Ratti, L; Manfredi, P F; Angelini, C; Batignani, G; Bettarini, S; Bondioli, M; Bosi, F; Bucci, F; Calderini, G; Carpinelli, M; Ceccanti, M; Forti, F; Gagliardi, D J; Giorgi, M A; Lusiani, A; Mammini, P; Morganti, M; Morsani, F; Neri, N; Paoloni, E; Profeti, A; Rama, M; Rizzo, G; Sandrelli, F; Simi, G; Triggiani, G; Walsh, J; Burchat, Patricia R; Cheng, C; Kirkby, D; Meyer, T I; Roat, C; Bóna, M; Bianchi, F; Gamba, D; Trapani, P; Bosisio, L; Della Ricca, G; Dittongo, S; Lanceri, L; Pompili, A; Poropat, P; Rashevskaia, I; Vuagnin, G; Burke, S; Callahan, D; Campagnari, C; Dahmes, B; Hale, D; Hart, P; Kuznetsova, N; Kyre, S; Levy, S; Long, O; May, J; Mazur, M; Richman, J; Verkerke, W; Witherell, M; Beringer, J; Eisner, A M; Frey, A; Grillo, A A; Grothe, M; Johnson, R P; Kröger, W; Lockman, W S; Pulliam, T; Rowe, W; Schmitz, R E; Seiden, A; Spencer, E N; Turri, M; Walkowiak, W; Wilder, M; Wilson, M; Charles, E; Elmer, P; Nielsen, J; Orejudos, W; Scott, I; Zobernig, H

2002-01-01

The Silicon Vertex Tracker (SVT) of the BaBar experiment at the PEP-II asymmetric B factory is a five-layer double-sided, AC-coupled silicon microstrip detector. It represents the crucial element to precisely measure the decay position of B mesons and extract time-dependent CP asymmetries. The SVT architecture is shown and its performance is described, with emphasis on hit resolutions and efficiencies.

The BaBar silicon vertex tracker, performance and running experience

International Nuclear Information System (INIS)

Re, V.; Borean, C.; Bozzi, C.; Carassiti, V.; Cotta Ramusino, A.; Piemontese, L.; Breon, A.B.; Brown, D.; Clark, A.R.; Goozen, F.; Hernikl, C.; Kerth, L.T.; Gritsan, A.; Lynch, G.; Perazzo, A.; Roe, N.A.; Zizka, G.; Roberts, D.; Schieck, J.; Brenna, E.; Citterio, M.; Lanni, F.; Palombo, F.; Ratti, L.; Manfredi, P.F.; Angelini, C.; Batignani, G.; Bettarini, S.; Bondioli, M.; Bosi, F.; Bucci, F.; Calderini, G.; Carpinelli, M.; Ceccanti, M.; Forti, F.; Gagliardi, D.; Giorgi, M.A.; Lusiani, A.; Mammini, P.; Morganti, M.; Morsani, F.; Neri, N.; Paoloni, E.; Profeti, A.; Rama, M.; Rizzo, G.; Sandrelli, F.; Simi, G.; Triggiani, G.; Walsh, J.; Burchat, P.; Cheng, C.; Kirkby, D.; Meyer, T.I.; Roat, C.; Bona, M.; Bianchi, F.; Gamba, D.; Trapani, P.; Bosisio, L.; Della Ricca, G.; Dittongo, S.; Lanceri, L.; Pompili, A.; Poropat, P.; Rashevskaia, I.; Vuagnin, G.; Burke, S.; Callahan, D.; Campagnari, C.; Dahmes, B.; Hale, D.; Hart, P.; Kuznetsova, N.; Kyre, S.; Levy, S.; Long, O.; May, J.; Mazur, M.; Richman, J.; Verkerke, W.; Witherell, M.; Beringer, J.; Eisner, A.M.; Frey, A.; Grillo, A.A.; Grothe, M.; Johnson, R.P.; Kroeger, W.; Lockman, W.S.; Pulliam, T.; Rowe, W.; Schmitz, R.E.; Seiden, A.; Spencer, E.N.; Turri, M.; Walkowiak, W.; Wilder, M.; Wilson, M.; Charles, E.; Elmer, P.; Nielsen, J.; Orejudos, W.; Scott, I.; Zobernig, H.

2002-01-01

The Silicon Vertex Tracker (SVT) of the BaBar experiment at the PEP-II asymmetric B factory is a five-layer double-sided, AC-coupled silicon microstrip detector. It represents the crucial element to precisely measure the decay position of B mesons and extract time-dependent CP asymmetries. The SVT architecture is shown and its performance is described, with emphasis on hit resolutions and efficiencies

The tensile effect on crack formation in single crystal silicon irradiated by intense pulsed ion beam

Science.gov (United States)

Liang, Guoying; Shen, Jie; Zhang, Jie; Zhong, Haowen; Cui, Xiaojun; Yan, Sha; Zhang, Xiaofu; Yu, Xiao; Le, Xiaoyun

2017-10-01

Improving antifatigue performance of silicon substrate is very important for the development of semiconductor industry. The cracking behavior of silicon under intense pulsed ion beam irradiation was studied by numerical simulation in order to understand the mechanism of induced surface peeling observed by experimental means. Using molecular dynamics simulation based on Stillinger Weber potential, tensile effect on crack growth and propagation in single crystal silicon was investigated. Simulation results reveal that stress-strain curves of single crystal silicon at a constant strain rate can be divided into three stages, which are not similar to metal stress-strain curves; different tensile load velocities induce difference of single silicon crack formation speed; the layered stress results in crack formation in single crystal silicon. It is concluded that the crack growth and propagation is more sensitive to strain rate, tensile load velocity, stress distribution in single crystal silicon.

Eliminating Light-Induced Degradation in Commercial p-Type Czochralski Silicon Solar Cells

Directory of Open Access Journals (Sweden)

Brett Hallam

2017-12-01

Full Text Available This paper discusses developments in the mitigation of light-induced degradation caused by boron-oxygen defects in boron-doped Czochralski grown silicon. Particular attention is paid to the fabrication of industrial silicon solar cells with treatments for sensitive materials using illuminated annealing. It highlights the importance and desirability of using hydrogen-containing dielectric layers and a subsequent firing process to inject hydrogen throughout the bulk of the silicon solar cell and subsequent illuminated annealing processes for the formation of the boron-oxygen defects and simultaneously manipulate the charge states of hydrogen to enable defect passivation. For the photovoltaic industry with a current capacity of approximately 100 GW peak, the mitigation of boron-oxygen related light-induced degradation is a necessity to use cost-effective B-doped silicon while benefitting from the high-efficiency potential of new solar cell concepts.

Penicillin sensitivity among children without a positive history for penicillin allergy.

Science.gov (United States)

Cetinkaya, Feyzullah; Cag, Yakup

2004-06-01

To establish the prevalence of positive penicillin skin tests among outpatients without any drug reaction history. Skin testing was performed in 147 children (aged 6-13 years) who had had received a penicillin preparation at least three times in the last 12 months without any allergic reaction. Before testing, detailed pediatric and allergy history were learned and then all children were tested with benzyl penicilloyl polylysin (PPL) and mixture of minor antigenic determinants. The test procedures were made epidermally and intradermally subsequently in every subject. The overall frequency of positive skin reactions to penicillin antigens was 10.2%. A mild systemic reaction was observed in one of the children during testing with PPL. We concluded that frequent use of penicillin and other beta-lactam antibiotics leads to sensitization of children in our study population despite these children seem to be asymptomatic during testing time. Copyright 2004 Blackwell Munksgaard

Test of a position-sensitive photomultiplier for fast scintillating fiber detector read-out

International Nuclear Information System (INIS)

Baehr, J.; Hoffmann, B.; Luedecke, H.; Nahnhauer, R.; Pohl, M.; Roloff, H.E.

1993-01-01

A position-sensitive photomultiplier with 256 anode pixels has been used to read out scintillating fibers excited by light emitting diodes, electrons from a β-source and a 5 GeV electron beam. Measurements have been done within a magnetic field up to 0.6 T. Tracking and electromagnetic shower detection capabilities of a simple fiber detector have been studied. (orig.)

Silicon subsystem mechanical engineering work for the solenoidal detector collaboration

Energy Technology Data Exchange (ETDEWEB)

Miller, W.O.; Barney, M.; Byrd, D.; Christensen, R.W.; Dransfield, G.; Elder, M.; Gamble, M.; Crastataro, C.; Hanlon, J.; Jones, D.C. [and others

1995-02-01

The silicon tracking system (STS) for the Solenoidal Detector Collaboration (SDC) represented an order of magnitude increase in size over any silicon system that had been previously built or even planned. In order to meet its performance requirements, it could not simply be a linear scaling of earlier systems, but instead required completely new concepts. The small size of the early systems made it possible to simply move the support hardware and services largely outside the active volume of the system. For a system five meters long, that simply is not an option. The design of the STS for the SDC experiment was the result of numerous compromises between the capabilities required to do the physics and the limitations imposed by cost, material properties, and silicon strip detector characteristics. From the point of view of the physics, the silicon system should start as close to the interaction point as possible. In addition, the detectors should measure the position of particles passing through them with no errors, and should not deflect or interact with the particles in any way. However, cost, radiation damage, and other factors limiting detector performance dictated, other, more realistic values. Radiation damage limited the inner radius of the silicon detectors to about 9 cm, whereas cost limited the outer radius of the detectors to about 50 cm. Cost also limits the half length of the system to about 250 cm. To control the effects of radiation damage on the detectors required operating the system at a temperature of 0{degrees}C or below, and maintaining that temperature throughout life of the system. To summarize, the physics and properties of the silicon strip detectors requires that the detectors be operated at or below 0{degrees}C, be positioned very accurately during assembly and remain positionally stable throughout their operation, and that all materials used be radiation hard and have a large thickness for one radiation length.

Silicon subsystem mechanical engineering work for the solenoidal detector collaboration

International Nuclear Information System (INIS)

Miller, W.O.; Barney, M.; Byrd, D.; Christensen, R.W.; Dransfield, G.; Elder, M.; Gamble, M.; Crastataro, C.; Hanlon, J.; Jones, D.C.

1995-01-01

The silicon tracking system (STS) for the Solenoidal Detector Collaboration (SDC) represented an order of magnitude increase in size over any silicon system that had been previously built or even planned. In order to meet its performance requirements, it could not simply be a linear scaling of earlier systems, but instead required completely new concepts. The small size of the early systems made it possible to simply move the support hardware and services largely outside the active volume of the system. For a system five meters long, that simply is not an option. The design of the STS for the SDC experiment was the result of numerous compromises between the capabilities required to do the physics and the limitations imposed by cost, material properties, and silicon strip detector characteristics. From the point of view of the physics, the silicon system should start as close to the interaction point as possible. In addition, the detectors should measure the position of particles passing through them with no errors, and should not deflect or interact with the particles in any way. However, cost, radiation damage, and other factors limiting detector performance dictated, other, more realistic values. Radiation damage limited the inner radius of the silicon detectors to about 9 cm, whereas cost limited the outer radius of the detectors to about 50 cm. Cost also limits the half length of the system to about 250 cm. To control the effects of radiation damage on the detectors required operating the system at a temperature of 0 degrees C or below, and maintaining that temperature throughout life of the system. To summarize, the physics and properties of the silicon strip detectors requires that the detectors be operated at or below 0 degrees C, be positioned very accurately during assembly and remain positionally stable throughout their operation, and that all materials used be radiation hard and have a large thickness for one radiation length

Position-sensitive radiation detector

International Nuclear Information System (INIS)

Mathieson, E.; Smith, G.C.; Gilvin, P.J.

1981-01-01

Apparatus for sensing the position of radiation received has a plurality of receptors spaced in at least one line on which the position is to be determined, their outputs being associated to form at least two groups, the density of the receptors in each group varying along the line. The receptors may comprise cathode arrays of a multiwire proportional counter, with an anode array between, measuring along lines in directions x and y respectively. The density of the wires in the two groups, decreases in opposite directions. A circuit determines the ratio of the output of one group to the sum of the group outputs. In another embodiment a scintillator is viewed by a plurality of light guides, the ends of which adjacent to the scintillator form the receptors, the four groups of which each terminate on a photomultiplier. (author)

Build-up of the silicon micro-strip detector array in ETF of HIRFL-CSR

International Nuclear Information System (INIS)

Wang Pengfei; Li Zhankui; Li Haixia

2014-01-01

Silicon micro-strip detectors have been widely used in the world-famous nuclear physics laboratories due to their better position resolution and energy resolution. Double-sided silicon micro-strip detectors with a position resolution of 0.5 mm × 0.5 mm, have been fabricated in the IMP (Institute of Modern Physics, CAS) by using microelectronics technology. These detectors have been used in the ETF (External Target Facility) of HIRFL-CSR, as ΔE detectors of the ΔE-E telescope system and the track detectors. With the help of flexibility printed circuit board (FPCB) and the integrated ASIC chips, a compact multi-channel front-end electronic board has been designed to fulfill the acquisition of the energy and position information of the Silicon micro-strip detectors. It is described in this paper that the build-up of the Silicon micro-strip detector array in ETF of HIRFL-CSR, the determination of the energy resolution of the detector units, and the energy resolution of approximately 1% obtained for 5∼9 MeV α particles in vacuum. (authors)

Heterogeneous catalysis in highly sensitive microreactors

DEFF Research Database (Denmark)

Olsen, Jakob Lind

This thesis present a highly sensitive silicon microreactor and examples of its use in studying catalysis. The experimental setup built for gas handling and temperature control for the microreactor is described. The implementation of LabVIEW interfacing for all the experimental parts makes...

Non-agglomerated silicon nanoparticles on (0 0 1) silicon substrate formed by PLA and their photoluminescence properties

International Nuclear Information System (INIS)

Du Jun; Tu Hailing; Wang Lei

2009-01-01

In this work, non-agglomerated silicon nanoparticles formed on Si(0 0 1) substrate were synthesized by pulsed laser ablation (PLA) and their photoluminescence (PL) properties were studied. The controllable parameters in PLA process include mainly pulsed laser energy, target-to-substrate distance and buffer gas pressure. In particular, the effect of buffer gas pressure on the formation of non-agglomerated and size-controlled silicon nanoparticles has been discussed. The results show that non-agglomerated and size-controlled silicon nanoparticles can be fabricated with particle size in the range of 2-10 nm when Ar buffer gas pressure was varied from 50 to 10 Pa. Most of these nanoparticles are in form of single crystal with less surface oxidation in the as-deposited samples. The PL peak positions are located at 581-615 nm for Si nanoparticles with size of 2-10 nm. When exposed to air for up to 60 days, the core/shell structure of Si nanoparticles would be formed, which in turn could be responsible for the blue shift of PL peak position. Pt noble metal coating has passivation effect for surface stabilization of Si nanoparticles and shows relatively satisfied time-stability of PL intensity. These results suggest that the Si nanoparticles prepared by PLA have a large potential for the fabrication of optically active photonic devices based on the Si technology.

High resolution, position sensitive detector for energetic particle beams

Energy Technology Data Exchange (ETDEWEB)

Marsh, E P [Charles Evans and Associates, Redwood City, CA (United States); Strathman, M D [Charles Evans and Associates, Redwood City, CA (United States); Reed, D A [Charles Evans and Associates, Redwood City, CA (United States); Odom, R W [Charles Evans and Associates, Redwood City, CA (United States); Morse, D H [Sandia National Labs., Livermore, CA (United States); Pontau, A E [Sandia National Labs., Livermore, CA (United States)

1993-05-01

The performance and design of an imaging position sensitive, particle beam detector will be presented. The detector is minimally invasive, operates a wide dynamic range (>10[sup 10]), and exhibits high spatial resolution. The secondary electrons produced when a particle beam passes through a thin foil are imaged using stigmatic ion optics onto a two-dimensional imaging detector. Due to the low scattering cross section of the 6 nm carbon foil the detector is a minimal perturbation on the primary beam. A prototype detector with an image resolution of approximately 5 [mu]m for a field of view of 1 mm has been reported. A higher resolution detector for imaging small beams (<50 [mu]m) with an image resolution of better than 0.5 [mu]m has since been developed and its design is presented. (orig.)

Ab initio simulation of amorphous silicon

International Nuclear Information System (INIS)

Cooper, N.C.; McKenzie, D.R.; Goringe, C.M.

1999-01-01

Full text: A first-principles Car-Parrinello molecular dynamics simulation of amorphous silicon is presented. Density Functional Theory is used to describe the forces between the atoms in a 64 atom supercell which is periodically repeated throughout space in order to generate an infinite network of atoms (a good approximation to a real solid). A quench from the liquid phase is used to achieve a quenched amorphous structure, which is subjected to an annealing cycle to improve its stability. The final, annealed network is in better agreement with experiment than any previous simulation of amorphous silicon. Significantly, the predicted average first-coordination numbers of 3.56 and 3.84 for the quenched and annealed structures from this simulation agree very closely with the experimental values of 3.55 and 3.90 respectively, whereas all previous simulations yielded first coordination numbers greater than 4. This improved agreement in coordination numbers is important because it supports the experimental finding that dangling bonds (which are associated with under-coordinated atoms) are more prevalent than floating bonds (the strained, longer bond of a five coordinate atom) in pure amorphous silicon. Finally, the effect of adding hydrogen to amorphous silicon was investigated by specifically placing hydrogen atoms at the likely defect sites. After a structural relaxation to optimise the positions of these hydrogen atoms, the localised electronic states associated with these defects are absent. Thus hydrogen is responsible for removing these defect states (which are able to trap carriers) from the edge of the band gap of the amorphous silicon. These results confirm the widely held ideas about the effect of hydrogen in producing remarkable improvements in the electronic properties of amorphous silicon

A 75 GHz silicon metal-semiconductor-metal Schottky photodiode

International Nuclear Information System (INIS)

Alexandrou, S.; Wang, C.; Hsiang, T.Y.; Liu, M.Y.; Chou, S.Y.

1993-01-01

The ultrafast characteristics of crystalline-silicon metal-semiconductor-metal (MSM) photodiodes with 300 nm finger width and spacing were measured with a subpicosecond electro-optic sampling system. Electrical responses with full width at half maximum as short as 5.5 and 11 ps, at corresponding 3 dB bandwidths of 75 and 38 GHz, were generated by violet and red photons, respectively. The difference is attributed to the photon penetration depth which is much larger than the diode finger spacing at red, but smaller at violet. Light-intensity dependence was also examined at different wavelengths, indicating a linear relation and a higher sensitivity in the violet. These results not only demonstrated the fastest silicon photodetector reported to date, but also pinpointed the dominant speed-limiting factor of silicon MSM photodiodes. A configuration is suggested to improve the speed of these detectors at long wavelengths

Miniature silicon photodiodes for photon and electron radiation dosimetry in therapeutical applications

International Nuclear Information System (INIS)

Gilar, O.; Petr, I.

1986-01-01

The silicon diode is manufactured from P type silicon, the P layer is implanted with boron atoms and the N layer with phosphorus atoms. The diode dimensions are 2x2x0.2 mm. It is encased in elastic tissue-equivalent material. The electrodes are from an Al foil. The diode can be used as an in-vivo dosemeter in human body cavities. When irradiated, it supplies information on the instantaneous dose rate at a given point and on the dose cumulated over a certain time. Its current response to gamma radiation kerma rate is linear, directional sensitivity is isotropic. Temperature sensitivity of the photodiode is shown graphically for the range 20 to 40 degC, and the depth dose distribution measured in a water phantom is given for 6, 12 and 20 MeV photons and electrons. The diode energy dependence shows increased sensitivity to low-energy photons. (M.D.)

Design Approaches for Enhancing Photovoltaic Performance of Silicon Solar Cells Sensitized by Proximal Nanocrystalline Quantum Dots

Science.gov (United States)

Shafiq, Natis

Energy transfer (ET) based sensitization of silicon (Si) using proximal nanocrystal quantum dots (NQDs) has been studied extensively in recent years as a means to develop thin and flexible Si based solar cells. The driving force for this research activity is a reduction in materials cost. To date, the main method for determining the role of ET in sensitizing Si has been optical spectroscopic studies. The quantitative contribution from two modes of ET (namely, nonradiative and radiative) has been reported using time-resolved photoluminescence (TRPL) spectroscopy coupled with extensive theoretical modelling. Thus, optical techniques have established the potential for utilizing ET based sensitization of Si as a feasible way to develop novel NQD-Si hybrid solar cells. However, the ultimate measure of the efficiency of ET-based mechanisms is the generation of electron-hole pairs by the impinging photons. It is therefore important to perform electrical measurements. However, only a couple of studies have attempted electrical quantification of ET modes. A few studies have focused on photocurrent measurements, without considering industrially relevant photovoltaic (PV) systems. Therefore, there is a need to develop a systematic approach for the electrical quantification of ET-generated charges and to help engineer new PV architectures optimized for harnessing the full advantages of ET mechanisms. Within this context, the work presented in this dissertation aims to develop an experimental testing protocol that can be applied to different PV structures for quantifying ET contributions from electrical measurements. We fabricated bulk Si solar cells (SCs) as a test structure and utilized CdSe/ZnS NQDs for ET based sensitization. The NQD-bulk Si hybrid devices showed ˜30% PV enhancement after NQD deposition. We measured external quantum efficiency (EQE) of these devices to quantify ET-generated charges. Reflectance measurements were also performed to decouple contributions of

Method of producing p-i-n structures by compensation of lithium ions from both side of silicon

International Nuclear Information System (INIS)

Muminov, R.A.; Radjapov, S.A.; Saymbetov, A.K.; Tursunkulov, O.M.; Pindurin, Yu.S.

2007-01-01

Full text: Semiconductor nuclear radiation detectors are needed to solve certain problems in nuclear spectroscopy. The development of efficiency detectors became possible with advances in growing high purify silicon single crystals with the required properties, satisfying the requirements for obtaining detectors based on them. One important requirement for obtaining detectors with sensitive area is that its resistance must be high. This is achieved by using the lithium ion drift process in the volume of the semiconductor detector. Thus it has been developed and created silicon semiconductor nuclear radiation detectors with vide range of diameter of sensitive area up to 100 mm and thickness (from 1mm to 10mm). At present work a new method for producing p-i-n structures was developed to decrease substantially the time required for compensation of silicon by lithium ions and to eliminate at the same time the negative consequences of holding the crystal at a high temperature and under a high voltage. Drift of lithium ions from two ends of prepared samples is conducted to a depth sufficient for the required compensation of the initial acceptor impurity in silicon. The method described above was used to fabricate a batch of Si(Li) detectors with a 1-10 mm thick and 10-110 mm in diameter sensitive region. The thickness of the sensitive region was determined by performing standard measurements and chemical pigmentation. Advantages of detectors are they have improved properties and less time for compensation of lithium ions. (authors)

Sensitive element of multifunctional sensor for measuring temperature, strain and magnetic field induction

Directory of Open Access Journals (Sweden)

Druzhinin A. A.

2017-12-01

Full Text Available Sensitive element of multifunctional sensor for measuring temperature, strain and magnetic field induction has been developed based on the studies of electrical conductivity and magnetoresistance of silicon and germanium microcrystals in the temperature range 4.2—70 K, strain ±1.5*10–3 rel.un. and magnetic fields of 0—14 T. The feature of the sensitive element is the using of the p- and n-type conductivity germanium microcrystals as mechanical and magnetic field sensors, respectively, and the p-type silicon microcrystal — as temperature sensor. That allows providing the compensation of temperature influence on piezoresistance and on sensitivity to the magnetic field.

Silicon-on-Insulator Nanowire Based Optical Waveguide Biosensors

International Nuclear Information System (INIS)

Li, Mingyu; Liu, Yong; Chen, Yangqing; He, Jian-Jun

2016-01-01

Optical waveguide biosensors based on silicon-on-insulator (SOI) nanowire have been developed for label free molecular detection. This paper reviews our work on the design, fabrication and measurement of SOI nanowire based high-sensitivity biosensors employing Vernier effect. Biosensing experiments using cascaded double-ring sensor and Mach-Zehnder- ring sensor integrated with microfluidic channels are demonstrated (paper)

Geochemistry of silicon isotopes

Energy Technology Data Exchange (ETDEWEB)

Ding, Tiping; Li, Yanhe; Gao, Jianfei; Hu, Bin [Chinese Academy of Geological Science, Beijing (China). Inst. of Mineral Resources; Jiang, Shaoyong [China Univ. of Geosciences, Wuhan (China).

2018-04-01

Silicon is one of the most abundant elements in the Earth and silicon isotope geochemistry is important in identifying the silicon source for various geological bodies and in studying the behavior of silicon in different geological processes. This book starts with an introduction on the development of silicon isotope geochemistry. Various analytical methods are described and compared with each other in detail. The mechanisms of silicon isotope fractionation are discussed, and silicon isotope distributions in various extraterrestrial and terrestrial reservoirs are updated. Besides, the applications of silicon isotopes in several important fields are presented.

Noble gas atoms as chemical impurities in silicon

International Nuclear Information System (INIS)

Tkachev, V.D.; Mudryi, A.V.; Minaev, N.S.

1984-01-01

The behaviour of noble gas atoms implanted in silicon is studied by the luminescence method. The energy position of Moessbauer-type luminescence bands with zero-phonon lines 1.0148, 1.0120, 1.0097, 1.0048 eV and others connected with implanted atoms of neon, helium, argon, krypton, respectively, indicates the formation of deep energy levels in the forbidden gap of silicon. Implantation of the noble gas isotopes confirms their participation in formation processes of the luminescence centers in silicon. The temperature range of existence and the symmetry of defects incorporating the noble gas atoms are found. It is noted that noble gas atoms form impurity complexes with deep energy levels and their behaviour in crystals does not differ from that of main doped or residual technological impurity atoms. (author)

Superconductive silicon nanowires using gallium beam lithography.

Energy Technology Data Exchange (ETDEWEB)

Henry, Michael David; Jarecki, Robert Leo,

2014-01-01

This work was an early career LDRD investigating the idea of using a focused ion beam (FIB) to implant Ga into silicon to create embedded nanowires and/or fully suspended nanowires. The embedded Ga nanowires demonstrated electrical resistivity of 5 m-cm, conductivity down to 4 K, and acts as an Ohmic silicon contact. The suspended nanowires achieved dimensions down to 20 nm x 30 nm x 10 m with large sensitivity to pressure. These structures then performed well as Pirani gauges. Sputtered niobium was also developed in this research for use as a superconductive coating on the nanowire. Oxidation characteristics of Nb were detailed and a technique to place the Nb under tensile stress resulted in the Nb resisting bulk atmospheric oxidation for up to years.

All-silicon thermal independent Mach-Zehnder interferometer with multimode waveguides

DEFF Research Database (Denmark)

Guan, Xiaowei; Frandsen, Lars Hagedorn

2016-01-01

A novel all-silicon thermal independent Mach-Zehnder interferometer consisting of two multimode waveguide arms having equal lengths and widths but transmitting different modes is proposed and experimentally demonstrated. The interferometer has a temperature sensitivity smaller than 8pm/°C in a wa...

The kinetics of solid phase epitaxy in As-doped buried amorphous silicon layers

International Nuclear Information System (INIS)

McCallum, J.C.

1999-01-01

Ion implantation is the principal method used to introduce dopants into silicon for fabrication of semiconductor devices. During ion implantation, damage accumulates in the crystalline silicon lattice and amorphisation may occur over the depth range of the ions if the implant dose is sufficiently high. As device dimensions shrink, the need to produce shallower and shallower highly-doped layers increases and the probability of amorphisation also increases. To achieve dopant-activation, the amorphous or damaged material must be returned to the crystalline state by thermal annealing. Amorphous silicon layers can be crystallised by the solid-state process of solid phase epitaxy (SPE) in which the amorphous layer transforms to crystalline silicon (c-Si) layer by layer using the underlying c-Si as a seed. The atomic mechanism that is responsible for the crystallisation is thought to involve highly-localised bond-breaking and rearrangement processes at the amorphous/crystalline (a/c) interface but the defect responsible for these bond rearrangements has not yet been identified. Since the bond breaking process necessarily generates dangling bonds, it has been suggested that the crystallisation process may solely involve the formation and migration of dangling bonds at the interface. One of the key factors which may shed further light on the nature of the SPE defect is the observed dopant-dependence of the rate of crystallisation. It has been found that moderate concentrations of dopants enhance the SPE crystallisation rate while the presence of equal concentrations of an n-type and a p-type dopant (impurity compensation) returns the SPE rate to the intrinsic value. This provides crucial evidence that the SPE mechanism is sensitive to the position of the Fermi level in the bandgap of the crystalline and/or the amorphous silicon phases and may lead to identification of an energy level within the bandgap that can be associated with the defect. This paper gives details of SPE

Silicon heterojunction transistor

International Nuclear Information System (INIS)

Matsushita, T.; Oh-uchi, N.; Hayashi, H.; Yamoto, H.

1979-01-01

SIPOS (Semi-insulating polycrystalline silicon) which is used as a surface passivation layer for highly reliable silicon devices constitutes a good heterojunction for silicon. P- or B-doped SIPOS has been used as the emitter material of a heterojunction transistor with the base and collector of silicon. An npn SIPOS-Si heterojunction transistor showing 50 times the current gain of an npn silicon homojunction transistor has been realized by high-temperature treatments in nitrogen and low-temperature annealing in hydrogen or forming gas

Preliminary Study of Position-Sensitive Large-Area Radiation Portal Monitor

Energy Technology Data Exchange (ETDEWEB)

Lim, Chang Hwy; Kim, Hyunok; Moon, Myung Kook [Korea Atomic Energy Research Institute, Daejeon (Korea, Republic of); Kim, Jongyul [Korea Advanced Institute of Science and Technology, Daejeon (Korea, Republic of); Park, Jong Won; Lim, Yong Kon [Korea Institute of Ocean Science and Technology, Daejeon (Korea, Republic of)

2013-10-15

An RPM, which is a passive inspection method, is a system for monitoring the movement of radioactive materials at an airport, seaport, border, etc. To detect a γ-ray, an RPM using the plastic scintillator is generally used. The method of γ-ray detection using an RPM with a plastic scintillator is to measure lights generated by an incident γ-ray in the scintillator. Generally, a large-area RPM uses one or two photomultiplier tubes (PMT) for light collection. However, in this study, we developed a 4-ch RPM that can measure the radiation signal using 4 PMTs. The reason for using 4 PMTs is to calculate the position of the radiation source. In addition, we developed an electric device for acquisition of a 4-ch output signal at the same time. To estimate the performance of the developed RPM, we performed an RPM test using a {sup 60}Co γ-ray check source. In this study, we performed the development of a 4-ch RPM. The major function of the typical RPM is to measure the radiation. However, we developed a position-sensitive 4-ch RPM, which can be used to measure the location of the radiation source, as well as the radiation measurement, at the same time. In the future, we plan to develop an algorithm for a position detection of the radiation. In addition, an algorithm will be applied to an RPM.

Topological trigger device using scintillating fibers and position-sensitive photomultipliers

Energy Technology Data Exchange (ETDEWEB)

Kuroda, Keiichi; Dufournaud, J; Sillou, D [Laboratoire d' Annecy-le-Vieux de Physique des Particules (LAPP), 74 (France); Agoritsas, V [European Organization for Nuclear Research, Geneva (Switzerland); Bystricky, G; Lehar, F; Lesquen, A de [CEN-Saclay, 91 - Gif-sur-Yvette (France); Giacomich, R; Pauletta, G; Penzo, A; Salvato, G; Schiavon, P; Villari, A [INFN, Messina (Italy) INFN, Trieste (Italy) INFN, Udine (Italy); Gorin, A M; Meschanin, A P; Nurushev, S B; Rakhmatov, V E; Rykalin, V L; Solovyanov, V L; Vasiliev, A N; Vasil' chencko, V G [Institute for High Energy Physics, Serpukhov (USSR); Oshima, N; Yamada, R [Fermi National Accelerator Lab., Batavia, IL (USA); Takeutchi, F [Kyoto-Sanyo Univ., Kyoto (Japan); Yoshida, T [Osaka City Univ. (Japan); Akchurin, N; Onel, Y; Newsom, C

1991-07-01

An approach to a high quality of the Level-1 Trigger is investigated on the basis of a topological trigger device. It will be realized by using scintillating fibers and position-sensitive photomultipliers, both considered as potential candidates of new detector-components thanks to their excellent time characteristics and high radiation resistances. The device is characterized in particular by its simple concept and reliable operation supported by the mature technologies emploied. The major interests of such a scheme under LHC environments reside in its capability of selcting high pperpendicular to tracks in real time, its optional immunity against low pperpendicular to tracks and loopers, as well as its effective links to other associated devices in the complex of a vertex detector. (orig.).

Topological trigger device using scintillating fibres and position-sensitive photomultipliers

CERN Document Server

Agoritsas, V; Dufournaud, J; Giacomich, R; Gorin, A M; Kuroda, K; Meshchanin, A P; Newsom, C R; Nurushev, S B; Önel, Y M; Oshima, N; Pauletta, G; Penzo, Aldo L; Rakhmatov, V E; Rykalin, V I; Salvato, G; Schiavon, R P; Sillou, D; Solovyanov, V L; Takeutchi, F; Vasilev, V; Vasilchenko, V G; Villari, A C C; Yamada, R; Toshida, T; CERN. Geneva. Detector Research and Development Committee

1990-01-01

An approach to a high-quality level-1 trigger is proposed on the basis of a topological device that will be realized by using scintillating fibres and position-sensitive photomultipliers, both of which are considered as potential candidates for new detector components, thanks to their excellent time characteristics and high radiation resistance. The device is characterized, in particular, by its simple concept and reliable functioning, which are a result of the mature technologies employed. In the LHC environment, the major interests of such a scheme reside in its capability to select high ptransv. tracks in real time, in its optional immunity against low ptransv. tracks and loopers, as well as in its effective links to other associated devices within the complex of a vertex detector.

Diatom-induced silicon isotopic fractionation in Antarctic sea ice

Science.gov (United States)

Francois, F.; Damien, C.; Jean-Louis, T.; Anthony, W.; Luc, A.

2006-12-01

We measured silicon-isotopic composition of dissolved silicon and biogenic silica collected by sequential melting from spring 2003 Antarctic pack ice (Australian sector). Sea ice is a key ecosystem in the Southern Ocean and its melting in spring has been often thought to have a seeding effect for the surface waters, triggering blooms in the mixed layer. This work is the first investigation of the silicon isotopes' proxy in sea ice and allows to estimate the activity of sea-ice diatoms in the different brine structures and the influence of sea- ice diatoms on the spring ice edge blooms. The relative use of the dissolved silicon pool by sea-ice diatoms is usually assessed by calculating nutrient:salinity ratios in the brines. However such an approach is biased by difficulties in evaluating the initial nutrient concentrations in the different brines structures, and by the impossibility to account for late sporadic nutrient replenishments. The silicon-isotopic composition of biogenic silica is a convenient alternative since it integrates an average Si utilization on all generations of diatoms. Measurements were performed on a MC-ICP-MS, in dry plasma mode using external Mg doping. Results are expressed as delta29Si relative to the NBS28 standard. From three sea ice cores with contrasted physico-chemical characteristics, we report significant isotopic fractionations linked to the diatoms activity, with distinct silicon biogeochemical dynamics between different brine structure. The diatoms in snow ice and in brine pockets of frazil or congelation ice have the most positive silicon-isotopic composition (+0.53 to +0.86 p.mil), indicating that they grow in a closed system and use a significant part of the small dissolved silicon pool. In the brine channels and skeletal layer, diatoms display a relatively less positive Si-isotopic composition (+0.41 to +0.70 p.mil), although it is still heavier compared to equilibrium fractionation (+0.38 p.mil). This suggests that they have

Mesoporous Silicon with Modified Surface for Plant Viruses and Their Protein Particle Sensing

Directory of Open Access Journals (Sweden)

Kae Dal Kwack

2008-10-01

Full Text Available Changes in electric parameters of a mesoporous silicon treated by a plasma chemical etching with fluorine and hydrogen ions, under the adsorption of NEPO (Nematodetransmitted Polyhedral plant viruses such as TORSV (Tomato Ringspot Virus, GFLV (Grapevine Fan Leaf Virus and protein macromolecule from TORSV particles are described. The current response to the applied voltage is measured for each virus particle to investigate the material parameters which are sensitive to the adsorbed particles. The peculiar behaviors of the response are modeled by the current-voltage relationship in a MOSFET. This model explains the behavior well and the double gate model of the MOSFET informs that the mesoporous silicon is a highly sensitive means of detecting the viruses in the size range less than 50 nm.

Temperature detectors on irradiated silicon base

International Nuclear Information System (INIS)

Karimov, M.; Dzhalelov, M.A.; Kurbanov, A.O.

2005-01-01

It is well known, that the most suitable for thermal resistors production is compensated silicon with impurities forming deep lying in forbidden zone, having big negative resistance temperature coefficients (RTC). In the capacity of initial materials for thermal resistors with negative RTC the n-type monocrystalline silicon with specific resistance ∼30 Ω·cm at 300 K is applied. Before the irradiation the phosphorus diffusion is realizing at temperature ∼1000 deg. C for 10 min. Irradiation is putting into practise by WWR-SM reactor fast neutrons within the range (7-10)·10 13 cm -2 . The produced resistors have nominal resistance range (8-20)·10 3 Ω·cm, coefficient of the thermal sensitivity B=4000-6000 deg. C., RTC α 300K =4-6.6 %/grad. It is shown, that offered method allows to obtain same type resistors characteristics on the base of neutron-irradiated material

A silicon nanowire heater and thermometer

Science.gov (United States)

Zhao, Xingyan; Dan, Yaping

2017-07-01

In the thermal conductivity measurements of thermoelectric materials, heaters and thermometers made of the same semiconducting materials under test, forming a homogeneous system, will significantly simplify fabrication and integration. In this work, we demonstrate a high-performance heater and thermometer made of single silicon nanowires (SiNWs). The SiNWs are patterned out of a silicon-on-insulator wafer by CMOS-compatible fabrication processes. The electronic properties of the nanowires are characterized by four-probe and low temperature Hall effect measurements. The I-V curves of the nanowires are linear at small voltage bias. The temperature dependence of the nanowire resistance allows the nanowire to be used as a highly sensitive thermometer. At high voltage bias, the I-V curves of the nanowire become nonlinear due to the effect of Joule heating. The temperature of the nanowire heater can be accurately monitored by the nanowire itself as a thermometer.

A silicon-nanowire memory driven by optical gradient force induced bistability

Energy Technology Data Exchange (ETDEWEB)

Dong, B. [School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798 (Singapore); Institute of Microelectronics, A*STAR (Agency for Science, Technology and Research), Singapore 117685 (Singapore); Cai, H., E-mail: caih@ime.a-star.edu.sg; Gu, Y. D.; Kwong, D. L. [Institute of Microelectronics, A*STAR (Agency for Science, Technology and Research), Singapore 117685 (Singapore); Chin, L. K.; Ng, G. I.; Ser, W. [School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798 (Singapore); Huang, J. G. [School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798 (Singapore); Institute of Microelectronics, A*STAR (Agency for Science, Technology and Research), Singapore 117685 (Singapore); School of Mechanical Engineering, Xi' an Jiaotong University, Xi' an 710049 (China); Yang, Z. C. [School of Electronics Engineering and Computer Science, Peking University, Beijing 100871 (China); Liu, A. Q., E-mail: eaqliu@ntu.edu.sg [School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798 (Singapore); School of Electronics Engineering and Computer Science, Peking University, Beijing 100871 (China)

2015-12-28

In this paper, a bistable optical-driven silicon-nanowire memory is demonstrated, which employs ring resonator to generate optical gradient force over a doubly clamped silicon-nanowire. Two stable deformation positions of a doubly clamped silicon-nanowire represent two memory states (“0” and “1”) and can be set/reset by modulating the light intensity (<3 mW) based on the optical force induced bistability. The time response of the optical-driven memory is less than 250 ns. It has applications in the fields of all optical communication, quantum computing, and optomechanical circuits.

First results from Position-Sensitive quantum calorimeters using Mo/Au Transition-Edge Sensors

International Nuclear Information System (INIS)

Figueroa-Feliciano, Enectali; Chervenak, Jay; Finkbeiner, Fred M.; Li, Mary; Lindeman, Mark A.; Stahle, Caroline K.; Stahle, Carl M.

2002-01-01

We report the first results from a high-energy-resolution imaging spectrometer called a Position-Sensitive Transition-Edge Sensor (PoST). A PoST is a quantum calorimeter consisting of two Transition Edge Sensors (TESs) on the ends of a long absorber to do one dimensional imaging spectroscopy. Comparing rise time and energy information, the position of the event in the PoST is determined. Energy is inferred from the sum of the two pulses. We have fabricated 7- and 15-pixel PoSTs using Mo-Au TESs and Au absorbers. We have achieved 32 eV FWHM energy resolution at 1.5 keV with a 7-pixel PoST calorimeter

Plasma jet array treatment to improve the hydrophobicity of contaminated HTV silicone rubber

Science.gov (United States)

Zhang, Ruobing; Han, Qianting; Xia, Yan; Li, Shuang

2017-10-01

An atmospheric-pressure plasma jet array specially designed for HTV silicone rubber treatment is reported in this paper. Stable plasma containing highly energetic active particles was uniformly generated in the plasma jet array. The discharge pattern was affected by the applied voltage. The divergence phenomenon was observed at low gas flow rate and abated when the flow rate increased. Temperature of the plasma plume is close to room temperature which makes it feasible for temperature-sensitive material treatment. Hydrophobicity of contaminated HTV silicone rubber was significantly improved after quick exposure of the plasma jet array, and the effective treatment area reached 120 mm × 50 mm (length × width). Reactive particles in the plasma accelerate accumulation of the hydrophobic molecules, namely low molecular weight silicone chains, on the contaminated surface, which result in a hydrophobicity improvement of the HTV silicone rubber.

Identifying Moderators of the Link Between Parent and Child Anxiety Sensitivity: The Roles of Gender, Positive Parenting, and Corporal Punishment.

Science.gov (United States)

Graham, Rebecca A; Weems, Carl F

2015-07-01

A substantial body of literature suggests that anxiety sensitivity is a risk factor for the development of anxiety problems and research has now begun to examine the links between parenting, parent anxiety sensitivity and their child's anxiety sensitivity. However, the extant literature has provided mixed findings as to whether parent anxiety sensitivity is associated with child anxiety sensitivity, with some evidence suggesting that other factors may influence the association. Theoretically, specific parenting behaviors may be important to the development of child anxiety sensitivity and also in understanding the association between parent and child anxiety sensitivity. In this study, 191 families (n = 255 children and adolescents aged 6-17 and their parents) completed measures of child anxiety sensitivity (CASI) and parenting (APQ-C), and parents completed measures of their own anxiety sensitivity (ASI) and their parenting (APQ-P). Corporal punishment was associated with child anxiety sensitivity and the child's report of their parent's positive parenting behaviors moderated the association between parent and child anxiety sensitivity. The child's gender was also found to moderate the association between parent and child anxiety sensitivity, such that there was a positive association between girls' and their parents anxiety sensitivity and a negative association in boys. The findings advance the understanding of child anxiety sensitivity by establishing a link with corporal punishment and by showing that the association between parent and child anxiety sensitivity may depend upon the parenting context and child's gender.

Vertical integration of high-Q silicon nitride microresonators into silicon-on-insulator platform.

Science.gov (United States)

Li, Qing; Eftekhar, Ali A; Sodagar, Majid; Xia, Zhixuan; Atabaki, Amir H; Adibi, Ali

2013-07-29

We demonstrate a vertical integration of high-Q silicon nitride microresonators into the silicon-on-insulator platform for applications at the telecommunication wavelengths. Low-loss silicon nitride films with a thickness of 400 nm are successfully grown, enabling compact silicon nitride microresonators with ultra-high intrinsic Qs (~ 6 × 10(6) for 60 μm radius and ~ 2 × 10(7) for 240 μm radius). The coupling between the silicon nitride microresonator and the underneath silicon waveguide is based on evanescent coupling with silicon dioxide as buffer. Selective coupling to a desired radial mode of the silicon nitride microresonator is also achievable using a pulley coupling scheme. In this work, a 60-μm-radius silicon nitride microresonator has been successfully integrated into the silicon-on-insulator platform, showing a single-mode operation with an intrinsic Q of 2 × 10(6).

Sensitivity Analyses of Alternative Methods for Disposition of High-Level Salt Waste: A Position Statement

International Nuclear Information System (INIS)

Harris, S.P.; Tuckfield, R.C.

1998-01-01

This position paper provides the approach and detail pertaining to a sensitivity analysis for the Phase II definition of weighted evaluation criteria weights and utility function values on the total utility scores for each Initial List alternative due to uncertainty and bias in engineering judgment

Bonding silicon nitride using glass-ceramic

International Nuclear Information System (INIS)

Dobedoe, R.S.

1995-01-01

Silicon nitride has been successfully bonded to itself using magnesium-aluminosilicate glass and glass-ceramic. For some samples, bonding was achieved using a diffusion bonder, but in other instances, following an initial degassing hold, higher temperatures were used in a nitrogen atmosphere with no applied load. For diffusion bonding, a small applied pressure at a temperature below which crystallisation occurs resulted in intimate contact. At slightly higher temperatures, the extent of the reaction at the interface and the microstructure of the glass-ceramic joint was highly sensitive to the bonding temperature. Bonding in a nitrogen atmosphere resulted in a solution-reprecipitation reaction. A thin layer of glass produced a ''dry'', glass-free joint, whilst a thicker layer resulted in a continuous glassy join across the interface. The chromium silicide impurities within the silicon nitride react with the nucleating agent in the glass ceramic, which may lead to difficulty in producing a fine glass-ceramic microstructure. Slightly lower temperatures in nitrogen resulted in a polycrystalline join but the interfacial contact was poor. It is hoped that one of the bonds produced may be developed to eventually form part of a graded joint between silicon nitride and a high temperature nickel alloy. (orig.)

Analytical and Experimental Evaluation of Joining Silicon Carbide to Silicon Carbide and Silicon Nitride to Silicon Nitride for Advanced Heat Engine Applications Phase II

Energy Technology Data Exchange (ETDEWEB)

Sundberg, G.J.

1994-01-01

Techniques were developed to produce reliable silicon nitride to silicon nitride (NCX-5101) curved joins which were used to manufacture spin test specimens as a proof of concept to simulate parts such as a simple rotor. Specimens were machined from the curved joins to measure the following properties of the join interlayer: tensile strength, shear strength, 22 C flexure strength and 1370 C flexure strength. In parallel, extensive silicon nitride tensile creep evaluation of planar butt joins provided a sufficient data base to develop models with accurate predictive capability for different geometries. Analytical models applied satisfactorily to the silicon nitride joins were Norton's Law for creep strain, a modified Norton's Law internal variable model and the Monkman-Grant relationship for failure modeling. The Theta Projection method was less successful. Attempts were also made to develop planar butt joins of siliconized silicon carbide (NT230).

Silicon-based tracking system: Mechanical engineering and design

International Nuclear Information System (INIS)

Miller, W.O.; Gamble, M.T.; Thompson, T.C.; Woloshun, K.A.; Reid, R.S.; Hanlon, J.A.; Michaud, F.D.; Dransfield, G.D.; Ziock, H.J.; Palounek, A.P.

1992-01-01

The Silicon Tracking System (STS) is composed of silicon strip detectors arranged by both in a cylindrical array and an array of flat panels about the interaction region. The cylindrical array is denoted the central region and the flat panel arrays, which are normal to the beam axis, we denoted the forward regions. The overall length of the silicon array is 5.16 m and the maximum diameter is 0.93 m. The Silicon Tracking System Conceptual Design Report, should be consulted for the body of analysis performed to quantify the present design concept. For the STS to achieve its physics goals, the mechanical structures and services must support 17 m 2 of silicon detectors and stabilize their positions to within 5 μm, uniformly cool the detector the system to O degrees C and at the same time potentially remove up to 13 kW of waste heat generated by the detector electronics, provide up to 3400 A of current to supply the 6.5 million electronics channels, and supply of control and data transmission lines for those channels. These objectives must be achieved in a high ionizing radiation environment, using virtually no structural mass and only low-Z materials. The system must be maintainable during its 10 year operating life

MRI screening for silicone breast implant rupture: accuracy, inter- and intraobserver variability using explantation results as reference standard

Energy Technology Data Exchange (ETDEWEB)

Maijers, M.C.; Ritt, M.J.P.F. [VU University Medical Centre, Department of Plastic, Reconstructive and Hand Surgery, De Boelelaan 1117, PO Box 7057, Amsterdam (Netherlands); Niessen, F.B. [VU University Medical Centre, Department of Plastic, Reconstructive and Hand Surgery, De Boelelaan 1117, PO Box 7057, Amsterdam (Netherlands); Jan van Goyen Clinic, Department of Plastic Surgery, Amsterdam (Netherlands); Veldhuizen, J.F.H. [MRI Centre, Amsterdam (Netherlands); Manoliu, R.A. [MRI Centre, Amsterdam (Netherlands); VU University Medical Centre, Department of Radiology, Amsterdam (Netherlands)

2014-06-15

The recall of Poly Implant Prothese (PIP) silicone breast implants in 2010 resulted in large numbers of asymptomatic women with implants who underwent magnetic resonance imaging (MRI) screening. This study's aim was to assess the accuracy and interobserver variability of MRI screening in the detection of rupture and extracapsular silicone leakage. A prospective study included 107 women with 214 PIP implants who underwent explantation preceded by MRI. In 2013, two radiologists blinded for previous MRI findings or outcome at surgery, independently re-evaluated all MRI examinations. A structured protocol described the MRI findings. The ex vivo findings served as reference standard. In 208 of the 214 explanted prostheses, radiologists agreed independently about the condition of the implants. In five of the six cases they disagreed (2.6 %), but subsequently reached consensus. A sensitivity of 93 %, specificity of 93 %, positive predictive value of 77 % and negative predictive value of 98 % was found. The interobserver agreement was excellent (kappa value of 0.92). MRI has a high accuracy in diagnosing rupture in silicone breast implants. Considering the high kappa value of interobserver agreement, MRI appears to be a consistent diagnostic test. A simple, uniform classification, may improve communication between radiologist and plastic surgeon. (orig.)

MRI screening for silicone breast implant rupture: accuracy, inter- and intraobserver variability using explantation results as reference standard

International Nuclear Information System (INIS)

Maijers, M.C.; Ritt, M.J.P.F.; Niessen, F.B.; Veldhuizen, J.F.H.; Manoliu, R.A.

2014-01-01

The recall of Poly Implant Prothese (PIP) silicone breast implants in 2010 resulted in large numbers of asymptomatic women with implants who underwent magnetic resonance imaging (MRI) screening. This study's aim was to assess the accuracy and interobserver variability of MRI screening in the detection of rupture and extracapsular silicone leakage. A prospective study included 107 women with 214 PIP implants who underwent explantation preceded by MRI. In 2013, two radiologists blinded for previous MRI findings or outcome at surgery, independently re-evaluated all MRI examinations. A structured protocol described the MRI findings. The ex vivo findings served as reference standard. In 208 of the 214 explanted prostheses, radiologists agreed independently about the condition of the implants. In five of the six cases they disagreed (2.6 %), but subsequently reached consensus. A sensitivity of 93 %, specificity of 93 %, positive predictive value of 77 % and negative predictive value of 98 % was found. The interobserver agreement was excellent (kappa value of 0.92). MRI has a high accuracy in diagnosing rupture in silicone breast implants. Considering the high kappa value of interobserver agreement, MRI appears to be a consistent diagnostic test. A simple, uniform classification, may improve communication between radiologist and plastic surgeon. (orig.)

Electrical leakage phenomenon in heteroepitaxial cubic silicon carbide on silicon

Science.gov (United States)

Pradeepkumar, Aiswarya; Zielinski, Marcin; Bosi, Matteo; Verzellesi, Giovanni; Gaskill, D. Kurt; Iacopi, Francesca

2018-06-01

Heteroepitaxial 3C-SiC films on silicon substrates are of technological interest as enablers to integrate the excellent electrical, electronic, mechanical, thermal, and epitaxial properties of bulk silicon carbide into well-established silicon technologies. One critical bottleneck of this integration is the establishment of a stable and reliable electronic junction at the heteroepitaxial interface of the n-type SiC with the silicon substrate. We have thus investigated in detail the electrical and transport properties of heteroepitaxial cubic silicon carbide films grown via different methods on low-doped and high-resistivity silicon substrates by using van der Pauw Hall and transfer length measurements as test vehicles. We have found that Si and C intermixing upon or after growth, particularly by the diffusion of carbon into the silicon matrix, creates extensive interstitial carbon traps and hampers the formation of a stable rectifying or insulating junction at the SiC/Si interface. Although a reliable p-n junction may not be realistic in the SiC/Si system, we can achieve, from a point of view of the electrical isolation of in-plane SiC structures, leakage suppression through the substrate by using a high-resistivity silicon substrate coupled with deep recess etching in between the SiC structures.

Development of a position-sensitive fission counter and measurement of neutron flux distributions

International Nuclear Information System (INIS)

Yamagishi, Hideshi; Soyama, Kazuhiko; Kakuta, Tsunemi

2001-08-01

A position-sensitive fission counter (PSFC) that operates in high neutron flux and high gamma-ray background such as at the side of a power reactor vessel has been developed. Neutron detection using the PSFC with a solenoid electrode is based on a delay-line method. The PSFC that has the outer diameter of 25 mm and the sensitive length of 1000 mm was manufactured for investigation of the performances. The PSFC provided output current pulses that were sufficiently higher than the alpha noise, though the PSFC has a solenoid electrode and large electrode-capacitance. The S/N ratio of PSFC outputs proved to be higher than that of ordinary fission counters with 200 mm sensitive length. A performance test to measure neutron flux distributions by a neutron measuring system with the PSFC was carried out by the side of a graphite pile, W2.4 x H1.4 x L1.2 m, with neutron sources, Am-Be 370 GBq x 2. It was confirmed that the neutron flux distribution was well measured with the system. (author)

Fluorescence and thermoluminescence in silicon oxide films rich in silicon

International Nuclear Information System (INIS)

Berman M, D.; Piters, T. M.; Aceves M, M.; Berriel V, L. R.; Luna L, J. A.

2009-10-01

In this work we determined the fluorescence and thermoluminescence (TL) creation spectra of silicon rich oxide films (SRO) with three different silicon excesses. To study the TL of SRO, 550 nm of SRO film were deposited by Low Pressure Chemical Vapor Deposition technique on N-type silicon substrates with resistivity in the order of 3 to 5 Ω-cm with silicon excess controlled by the ratio of the gases used in the process, SRO films with Ro= 10, 20 and 30 (12-6% silicon excess) were obtained. Then, they were thermally treated in N 2 at high temperatures to diffuse and homogenize the silicon excess. In the fluorescence spectra two main emission regions are observed, one around 400 nm and one around 800 nm. TL creation spectra were determined by plotting the integrated TL intensity as function of the excitation wavelength. (Author)

Rate equation modelling of erbium luminescence dynamics in erbium-doped silicon-rich-silicon-oxide

Energy Technology Data Exchange (ETDEWEB)

Shah, Miraj, E-mail: m.shah@ee.ucl.ac.uk [Department of Electronic and Electrical Engineering, UCL, Torrington Place, London WC1E 7JE (United Kingdom); Wojdak, Maciej; Kenyon, Anthony J. [Department of Electronic and Electrical Engineering, UCL, Torrington Place, London WC1E 7JE (United Kingdom); Halsall, Matthew P.; Li, Hang; Crowe, Iain F. [Photon Science Institute and School of Electrical and Electronic Engineering, University of Manchester, Sackville St Building, Manchester M13 9PL (United Kingdom)

2012-12-15

Erbium doped silicon-rich silica offers broad band and very efficient excitation of erbium photoluminescence (PL) due to a sensitization effect attributed to silicon nanocrystals (Si-nc), which grow during thermal treatment. PL decay lifetime measurements of sensitised Er{sup 3+} ions are usually reported to be stretched or multi exponential, very different to those that are directly excited, which usually show a single exponential decay component. In this paper, we report on SiO{sub 2} thin films doped with Si-nc's and erbium. Time resolved PL measurements reveal two distinct 1.54 {mu}m Er decay components; a fast microsecond component, and a relatively long lifetime component (10 ms). We also study the structural properties of these samples through TEM measurements, and reveal the formation of Er clusters. We propose that these Er clusters are responsible for the fast {mu}s decay component, and we develop rate equation models that reproduce the experimental transient observations, and can explain some of the reported transient behaviour in previously published literature.

Strain-Induced Spin-Resonance Shifts in Silicon Devices

Science.gov (United States)

Pla, J. J.; Bienfait, A.; Pica, G.; Mansir, J.; Mohiyaddin, F. A.; Zeng, Z.; Niquet, Y. M.; Morello, A.; Schenkel, T.; Morton, J. J. L.; Bertet, P.

2018-04-01

In spin-based quantum-information-processing devices, the presence of control and detection circuitry can change the local environment of a spin by introducing strain and electric fields, altering its resonant frequencies. These resonance shifts can be large compared to intrinsic spin linewidths, and it is therefore important to study, understand, and model such effects in order to better predict device performance. We investigate a sample of bismuth donor spins implanted in a silicon chip, on top of which a superconducting aluminum microresonator is fabricated. The on-chip resonator provides two functions: it produces local strain in the silicon due to the larger thermal contraction of the aluminum, and it enables sensitive electron spin-resonance spectroscopy of donors close to the surface that experience this strain. Through finite-element strain simulations, we are able to reconstruct key features of our experiments, including the electron spin-resonance spectra. Our results are consistent with a recently observed mechanism for producing shifts of the hyperfine interaction for donors in silicon, which is linear with the hydrostatic component of an applied strain.