Perpendicular magnetic anisotropy in CoXPd100-X alloys for magnetic tunnel junctions

Science.gov (United States)

Clark, B. D.; Natarajarathinam, A.; Tadisina, Z. R.; Chen, P. J.; Shull, R. D.; Gupta, S.

2017-08-01

CoFeB/MgO-based perpendicular magnetic tunnel junctions (p-MTJ's) with high anisotropy and low damping are critical for spin-torque transfer random access memory (STT-RAM). Most schemes of making the pinned CoFeB fully perpendicular require ferrimagnets with high damping constants, a high temperature-grown L10 alloy, or an overly complex multilayered synthetic antiferromagnet (SyAF). We report a compositional study of perpendicular CoxPd alloy-pinned Co20Fe60B20/MgO based MTJ stacks, grown at moderate temperatures in a planetary deposition system. The perpendicular anisotropy of the CoxPd alloy films can be tuned based on the layer thickness and composition. The films were characterized by alternating gradient magnetometry (AGM), energy-dispersive X-rays (EDX), and X-ray diffraction (XRD). Current-in-plane tunneling (CIPT) measurements have also been performed on the compositionally varied CoxPd MTJ stacks. The CoxPd alloy becomes fully perpendicular at approximately x = 30% (atomic fraction) Co. Full-film MTJ stacks of Si/SiO2/MgO (13)/CoXPd100-x (50)/Ta (0.3)/CoFeB (1)/MgO (1.6)/CoFeB (1)/Ta (5)/Ru (10), with the numbers enclosed in parentheses being the layer thicknesses in nm, were sputtered onto thermally oxidized silicon substrates and in-situ lamp annealed at 400 °C for 5 min. CIPT measurements indicate that the highest TMR is observed for the CoPd composition with the highest perpendicular magnetic anisotropy.

Magnetotransport properties of Cr1−δTe thin films with strong perpendicular magnetic anisotropy

Directory of Open Access Journals (Sweden)

L. Zhou

2017-12-01

Full Text Available P-type ferromagnetic Cr1-δTe thin films with the Curie temperature of 170K were epitaxially grown on GaAs substrate. Low-temperature magnetotransport study reveals that the film has a strong perpendicular magnetic anisotropy (PMA and an anisotropic magnetoresistance (AMR ratio up to 8.1%. Furthermore, reduced anomalous Hall effect is observed at low temperatures in Cr1-δTe, suggesting the possible crossover of the contribution to AHE from the intrinsic mechanism to extrinsic skew scattering. Distinctive from conventional transition metal ferromagnets, the AMR ratio is also greatly suppressed at low temperatures. Our work demonstrates that epitaxial Cr1-δTe films are interesting platforms for studying the physics underlying the strong PMA and large AMR.

Nanocrystalline iron nitride films with perpendicular magnetic anisotropy

International Nuclear Information System (INIS)

Gupta, Ajay; Dubey, Ranu; Leitenberger, W.; Pietsch, U.

2008-01-01

Nanocrystalline α-iron nitride films have been prepared using reactive ion-beam sputtering. Films develop significant perpendicualr magnetic anisotropy (PMA) with increasing thickness. A comparison of x-ray diffraction patterns taken with scattering vectors in the film plane and out of the film plane provides a clear evidence for development of compressive strain in the film plane with thickness. Thermal annealing results in relaxation of the strain, which correlates very well with the relaxation of PMA. This suggests that the observed PMA is a consequence of the breaking of the symmetry of the crystal structure due to the compressive strain

Interactions controlled evolution of complex magnetoresistance in as-deposited Ag100−xCox nanogranular films with perpendicular magnetic anisotropy

International Nuclear Information System (INIS)

Kumar, Dinesh; Chaudhary, Sujeet; Pandya, Dinesh K.

2015-01-01

Evolution of a complex magnetoresistance and dc-magnetization behavior of as-deposited co-sputtered Ag 100−x Co x films with the variation of cobalt concentration ‘x’ from 25.2 to 45.1 at% is presented. At 20 K, a transition from normal to complex magnetoresistance behavior, in conjunction with magnetic force microscopy evidence of the existence of a magnetic microstructure resulting in perpendicular magnetic anisotropy (PMA) is observed for x=32.6 cobalt concentration film. The dc-magnetization studies provide additional support to the presence of PMA in film that gets reduced with the increase of cobalt concentration. The complex magnetoresistance (MR) behavior also decreases with the increase of ‘x’. The room temperature MR, coercivity behavior and remanence to saturation magnetization ratio indicate the presence of direct ferromagnetic interactions due to the presence of ferromagnetic particles for x≥32.6 films. The observed complex MR behavior and presence of PMA are interpreted in terms of manifestation of the transition of interparticle magnetic interaction nature from dipolar to direct ferromagnetic. - Highlights: • Complex MR with perpendicular magnetic anisotropy (PMA) is observed. • MFM evidenced the presence of PMA. • Complex MR and PMA decreases with the increase of cobalt concentration. • Observed results are correlated with the nature of magnetic interactions

Perpendicular magnetic anisotropy of non-epitaxial hexagonal Co{sub 50}Pt{sub 50} thin films prepared at room temperature

Energy Technology Data Exchange (ETDEWEB)

Yuan, F.T., E-mail: ftyuan@gmail.com [iSentek Ltd., Advanced Sensor Laboratory, New Taipei City 22101, Taiwan (China); Chang, H.W., E-mail: wei0208@gmail.com [Department of Applied Physics, Tunghai University, Taichung 40704, Taiwan (China); Lee, P.Y.; Chang, C.Y. [Department of Applied Physics, Tunghai University, Taichung 40704, Taiwan (China); Chi, C.C. [Department of Materials Sciences and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan (China); Ouyang, H., E-mail: houyang@mx.nthu.edu.tw [Department of Materials Sciences and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan (China)

2015-04-15

Highlights: • In this paper, we propose a non-epitaxially grown PMA thin film of disorder hexagonal Co{sub 50}Pt{sub 50} which can satisfy all the requirements at once. • Although the preparation temperature is at room temperature and no post annealing is required, the film also shows good thermal stability up to 400 °C. • Moreover, the easy-controlling single layer deposition process of the film largely enhances the feasibility of practical production. • Significant PMA is achieved in a wide range of film thickness from 2 nm to 20 nm, which expands the usage form a GMR or TMR magnetic junctions to perpendicular spin polarizer for spin current related engineering. • The presented results may open new opportunities for advanced spintronic devices. - Abstract: Non-epitaxially induced perpendicular magnetic anisotropy (PMA) of Co{sub 50}Pt{sub 50} thin films at room temperature (RT) is reported. The CoPt film having a disordered hcp structure shows a magnetocrystalline anisotropy (K{sub u}{sup RT}) of 1–2 × 10{sup 6} erg/cm{sup 3} in a wide range of layer thickness from 2 to 20 nm. K{sub u}{sup RT} of about 1 × 10{sup 6} erg/cm{sup 3} can be preserved after a 400 °C-thermal cycle in the 5-nm-thick sample. Moderate PMA, large thickness range, simple preparation process, low formation temperature but good thermal stability make presented hcp CoPt become a remarkable option for advanced spintronic devices.

Magnetic anisotropies in ultrathin bismuth iron garnet films

International Nuclear Information System (INIS)

Popova, Elena; Franco Galeano, Andres Felipe; Deb, Marwan; Warot-Fonrose, Bénédicte; Kachkachi, Hamid; Gendron, François; Ott, Frédéric

2013-01-01

Ultrathin bismuth iron garnet Bi 3 Fe 5 O 12 films were grown epitaxially on (001)-oriented gadolinium gallium garnet substrates. Film thickness varied from two to three dozens of unit cells. Bi 3 Fe 5 O 12 films grow pseudomorphically on substrates up to a thickness of 20 nm, and then a lattice relaxation occurs. Magnetic properties of the films were studied as a function of bismuth iron garnet thickness. The magnetization and cubic anisotropy decrease with decreasing film thickness. The uniaxial magnetocrystalline anisotropy is constant for all film thicknesses. For two unit cell thick films, the easy magnetization axis changes from in-plane to perpendicular to the plane direction. Such a reorientation takes place as a result of the competition of constant uniaxial perpendicular anisotropy with weakening film magnetization. - Highlights: ► Ultrathin Bi 3 Fe 5 O 12 films were grown epitaxially on structure-matching substrates. ► Magnetic properties of Bi 3 Fe 5 O 12 were studied down to the thickness of 2.5 nm. ► Reorientation of easy magnetization axis as a function of film thickness was observed

Magnetic anisotropies in ultrathin bismuth iron garnet films

Energy Technology Data Exchange (ETDEWEB)

Popova, Elena, E-mail: popova@physique.uvsq.fr [Groupe d' Etude de la Matière Condensée (GEMaC), CNRS/Université de Versailles-Saint-Quentin, 45 Avenue des Etats-Unis, 78035 Versailles (France); Franco Galeano, Andres Felipe [Laboratoire PROcédés, Matériaux et Energie Solaire (PROMES), CNRS/Université de Perpignan Via Domitia, 52 Avenue Paul Alduy, 66860 Perpignan (France); Deb, Marwan [Groupe d' Etude de la Matière Condensée (GEMaC), CNRS/Université de Versailles-Saint-Quentin, 45 Avenue des Etats-Unis, 78035 Versailles (France); Warot-Fonrose, Bénédicte [Centre d' Elaboration de Matériaux et d' Etudes Structurales (CEMES), CNRS, 29 rue Jeanne Marvig, 31055 Toulouse (France); Transpyrenean Associated Laboratory for Electron Microscopy (TALEM), CEMES-INA, CNRS–Universidad de Zaragoza (Spain); Kachkachi, Hamid [Laboratoire PROcédés, Matériaux et Energie Solaire (PROMES), CNRS/Université de Perpignan Via Domitia, 52 Avenue Paul Alduy, 66860 Perpignan (France); Gendron, François [Institut des NanoSciences de Paris (INSP), CNRS/Université Pierre et Marie Curie-Paris 6, 4 place Jussieu, Boîte courrier 840, 75252 Paris Cedex 05 (France); Ott, Frédéric [Laboratoire Léon Brillouin (LLB), CNRS/CEA, Bâtiment 563, CEA Saclay, 91191 Gif sur Yvette Cedex (France); and others

2013-06-15

Ultrathin bismuth iron garnet Bi{sub 3}Fe{sub 5}O{sub 12} films were grown epitaxially on (001)-oriented gadolinium gallium garnet substrates. Film thickness varied from two to three dozens of unit cells. Bi{sub 3}Fe{sub 5}O{sub 12} films grow pseudomorphically on substrates up to a thickness of 20 nm, and then a lattice relaxation occurs. Magnetic properties of the films were studied as a function of bismuth iron garnet thickness. The magnetization and cubic anisotropy decrease with decreasing film thickness. The uniaxial magnetocrystalline anisotropy is constant for all film thicknesses. For two unit cell thick films, the easy magnetization axis changes from in-plane to perpendicular to the plane direction. Such a reorientation takes place as a result of the competition of constant uniaxial perpendicular anisotropy with weakening film magnetization. - Highlights: ► Ultrathin Bi{sub 3}Fe{sub 5}O{sub 12} films were grown epitaxially on structure-matching substrates. ► Magnetic properties of Bi{sub 3}Fe{sub 5}O{sub 12} were studied down to the thickness of 2.5 nm. ► Reorientation of easy magnetization axis as a function of film thickness was observed.

Perpendicular magnetic anisotropy in Co{sub X}Pd{sub 100−X} alloys for magnetic tunnel junctions

Energy Technology Data Exchange (ETDEWEB)

Clark, B.D.; Natarajarathinam, A.; Tadisina, Z.R. [Center for Materials for Information Technology, University of Alabama, Tuscaloosa, AL 35487 (United States); Chen, P.J.; Shull, R.D. [National Institute of Standards and Technology, Gaithersburg, MD 20899 (United States); Gupta, S., E-mail: Sgupta@eng.ua.edu [Center for Materials for Information Technology, University of Alabama, Tuscaloosa, AL 35487 (United States)

2017-08-15

Highlights: • CoPd alloy perpendicular anisotropy dependent on composition and thickness. • CIPT results show that TMR tracks with PMA of CoPd. • Potential replacement for Co/Pd multilayers. - Abstract: CoFeB/MgO-based perpendicular magnetic tunnel junctions (p-MTJ’s) with high anisotropy and low damping are critical for spin-torque transfer random access memory (STT-RAM). Most schemes of making the pinned CoFeB fully perpendicular require ferrimagnets with high damping constants, a high temperature-grown L1{sub 0} alloy, or an overly complex multilayered synthetic antiferromagnet (SyAF). We report a compositional study of perpendicular Co{sub x}Pd alloy-pinned Co{sub 20}Fe{sub 60}B{sub 20}/MgO based MTJ stacks, grown at moderate temperatures in a planetary deposition system. The perpendicular anisotropy of the Co{sub x}Pd alloy films can be tuned based on the layer thickness and composition. The films were characterized by alternating gradient magnetometry (AGM), energy-dispersive X-rays (EDX), and X-ray diffraction (XRD). Current-in-plane tunneling (CIPT) measurements have also been performed on the compositionally varied Co{sub x}Pd MTJ stacks. The Co{sub x}Pd alloy becomes fully perpendicular at approximately x = 30% (atomic fraction) Co. Full-film MTJ stacks of Si/SiO{sub 2}/MgO (13)/Co{sub X}Pd{sub 100−x} (50)/Ta (0.3)/CoFeB (1)/MgO (1.6)/CoFeB (1)/Ta (5)/Ru (10), with the numbers enclosed in parentheses being the layer thicknesses in nm, were sputtered onto thermally oxidized silicon substrates and in-situ lamp annealed at 400 °C for 5 min. CIPT measurements indicate that the highest TMR is observed for the CoPd composition with the highest perpendicular magnetic anisotropy.

Growth and characterization of MnGa thin films with perpendicular magnetic anisotropy on BiSb topological insulator

Science.gov (United States)

Duy Khang, Nguyen Huynh; Ueda, Yugo; Yao, Kenichiro; Hai, Pham Nam

2017-10-01

We report on the crystal growth as well as the structural and magnetic properties of Bi0.8Sb0.2 topological insulator (TI)/MnxGa1-x bi-layers grown on GaAs(111)A substrates by molecular beam epitaxy. By optimizing the growth conditions and Mn composition, we were able to grow MnxGa1-x thin films on Bi0.8Sb0.2 with the crystallographic orientation of Bi0.8Sb0.2(001)[1 1 ¯ 0]//MnGa (001)[100]. Using magnetic circular dichroism (MCD) spectroscopy, we detected both the L10 phase ( x 0.6 ) of MnxGa1-x. For 0.50 ≤ x ≤ 0.55 , we obtained ferromagnetic L10-MnGa thin films with clear perpendicular magnetic anisotropy, which were confirmed by MCD hysteresis, anomalous Hall effect as well as superconducting quantum interference device measurements. Our results show that the BiSb/MnxGa1-x bi-layer system is promising for perpendicular magnetization switching using the giant spin Hall effect in TIs.

Interfacial tuning of perpendicular magnetic anisotropy and spin magnetic moment in CoFe/Pd multilayers

Energy Technology Data Exchange (ETDEWEB)

Ngo, D.-T., E-mail: ndthe82@gmail.com [Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore 117576 (Singapore); Meng, Z.L. [Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore 117576 (Singapore); Tahmasebi, T. [Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore 117576 (Singapore); Data Storage Institute, A-STAR (Agency for Science Technology and Research), 5 Engineering Drive 1, Singapore 117608 (Singapore); Yu, X. [Singapore Synchrotron Light Source, National University of Singapore, 5 Research Link, Singapore 117603 (Singapore); Thoeng, E. [Singapore Synchrotron Light Source, National University of Singapore, 5 Research Link, Singapore 117603 (Singapore); Department of Physics, National University of Singapore, Singapore 117542 (Singapore); Yeo, L.H. [Department of Physics, National University of Singapore, Singapore 117542 (Singapore); Rusydi, A., E-mail: phyandri@nus.edu.sg [Singapore Synchrotron Light Source, National University of Singapore, 5 Research Link, Singapore 117603 (Singapore); Department of Physics, National University of Singapore, Singapore 117542 (Singapore); Han, G.C [Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore 117576 (Singapore); Teo, K.-L., E-mail: eleteokl@nus.edu.sg [Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore 117576 (Singapore)

2014-01-15

We report on a strong perpendicular magnetic anisotropy in [CoFe 0.4 nm/Pd t]{sub 6} (t=1.0–2.0 nm) multilayers fabricated by DC sputtering in an ultrahigh vacuum chamber. Saturation magnetization, M{sub s}, and uniaxial anisotropy, K{sub u}, of the multilayers decrease with increasing the spacing thickness; with a M{sub s} of 155 emu/cc and a K{sub u} of 1.14×10{sup 5} J/m{sup 3} at a spacing thickness of t=2 nm. X-ray absorption spectroscopy and X-ray magnetic circular dichroism measurements reveal that spin and orbital magnetic moments of Co and Fe in CoFe film decrease as a function of Pd thickness, indicating the major contribution of surface/interfacial magnetism to the magnetic properties of the film. - Highlights: • Strong perpendicular magnetic anisotropy essentially contributed by interfacial anisotropy. • Controllably magnetic properties with low M{sub s}, high K{sub u}, high P. • Interfacial magnetic moments modified by CoFe/Pd interfaces with strong spin–orbit coupling. • Narrow Bloch walls with Néel caps. • Superior magnetic characteristics for spin-torque applications.

Perpendicular Magnetic Anisotropy in FePt Patterned Media Employing a CrV Seed Layer

Directory of Open Access Journals (Sweden)

Chun Dong

2011-01-01

Full Text Available Abstract A thin FePt film was deposited onto a CrV seed layer at 400°C and showed a high coercivity (~3,400 Oe and high magnetization (900–1,000 emu/cm3 characteristic of L10 phase. However, the magnetic properties of patterned media fabricated from the film stack were degraded due to the Ar-ion bombardment. We employed a deposition-last process, in which FePt film deposited at room temperature underwent lift-off and post-annealing processes, to avoid the exposure of FePt to Ar plasma. A patterned medium with 100-nm nano-columns showed an out-of-plane coercivity fivefold larger than its in-plane counterpart and a remanent magnetization comparable to saturation magnetization in the out-of-plane direction, indicating a high perpendicular anisotropy. These results demonstrate the high perpendicular anisotropy in FePt patterned media using a Cr-based compound seed layer for the first time and suggest that ultra-high-density magnetic recording media can be achieved using this optimized top-down approach.

Exchange bias energy in Co/Pt/IrMn multilayers with perpendicular and in-plane anisotropy

Energy Technology Data Exchange (ETDEWEB)

Czapkiewicz, M. [Department of Electronics, AGH University of Science and Technology, 30-059 Cracow (Poland)]. E-mail: czapkiew@agh.edu.pl; Stobiecki, T. [Department of Electronics, AGH University of Science and Technology, 30-059 Cracow (Poland); Rak, R. [Department of Electronics, AGH University of Science and Technology, 30-059 Cracow (Poland); Zoladz, M. [Department of Electronics, AGH University of Science and Technology, 30-059 Cracow (Poland); Dijken, S. van [CRANN and School of Physics, Trinity College, Dublin 2 (Ireland)

2007-09-15

The magnetization reversal process in perpendicularly biased [Pt/Co]{sub 3}/d{sub Pt} Pt/IrMn and in-plane biased Co/d{sub Pt} Pt/IrMn multilayers with 0nm=anisotropy, the exchange bias field decreases monotonically with Pt insertion layer thickness, while its coercivity remains constant. The samples with perpendicular magnetic anisotropy, on the other hand, exhibit maximum exchange bias and minimum coercivity for d{sub Pt}=0.1nm. In both cases, the existence of large exchange bias fields correlates with a high domain density during magnetization reversal. The interface exchange coupling energy is larger for the in-plane biased films than for the perpendicularly biased multilayers.

Symmetry mismatch-driven perpendicular magnetic anisotropy for perovskite/brownmillerite heterostructures.

Science.gov (United States)

Zhang, Jing; Zhong, Zhicheng; Guan, Xiangxiang; Shen, Xi; Zhang, Jine; Han, Furong; Zhang, Hui; Zhang, Hongrui; Yan, Xi; Zhang, Qinghua; Gu, Lin; Hu, Fengxia; Yu, Richeng; Shen, Baogen; Sun, Jirong

2018-05-15

Grouping different transition metal oxides together by interface engineering is an important route toward emergent phenomenon. While most of the previous works focused on the interface effects in perovskite/perovskite heterostructures, here we reported on a symmetry mismatch-driven spin reorientation toward perpendicular magnetic anisotropy in perovskite/brownmillerite heterostructures, which is scarcely seen in tensile perovskite/perovskite heterostructures. We show that alternately stacking perovskite La 2/3 Sr 1/3 MnO 3 and brownmillerite LaCoO 2.5 causes a strong interface reconstruction due to symmetry discontinuity at interface: neighboring MnO 6 octahedra and CoO 4 tetrahedra at the perovskite/brownmillerite interface cooperatively relax in a manner that is unavailable for perovskite/perovskite interface, leading to distinct orbital reconstructions and thus the perpendicular magnetic anisotropy. Moreover, the perpendicular magnetic anisotropy is robust, with an anisotropy constant two orders of magnitude greater than the in-plane anisotropy of the perovskite/perovskite interface. The present work demonstrates the great potential of symmetry engineering in designing artificial materials on demand.

Chromium-induced ferromagnetism with perpendicular anisotropy in topological crystalline insulator SnTe (111) thin films

Science.gov (United States)

Wang, Fei; Zhang, Hongrui; Jiang, Jue; Zhao, Yi-Fan; Yu, Jia; Liu, Wei; Li, Da; Chan, Moses H. W.; Sun, Jirong; Zhang, Zhidong; Chang, Cui-Zu

2018-03-01

Topological crystalline insulator is a recently discovered topological phase of matter. It possesses multiple Dirac surface states, which are protected by the crystal symmetry. This is in contrast to the time-reversal symmetry that is operative in the well-known topological insulators. In the presence of a Zeeman field and/or strain, the multiple Dirac surface states are gapped. The high-Chern-number quantum anomalous Hall (QAH) state is predicted to emerge if the chemical potential resides in all the Zeeman gaps. Here, we use molecular-beam epitaxy to grow 12 double-layer (DL) pure and Cr-doped SnTe (111) thin film on heat-treated SrTi O3 (111) substrate using a quintuple layer of insulating (Bi0.2Sb0.8 ) 2T e3 topological insulator as a buffer film. The Hall traces of Cr-doped SnTe film at low temperatures display square hysteresis loops indicating long-range ferromagnetic order with perpendicular anisotropy. The Curie temperature of the 12 DL S n0.9C r0.1Te film is ˜110 K. Due to the chemical potential crossing the bulk valence bands, the anomalous Hall resistance of 12 DL S n0.9C r0.1Te film is substantially lower than the predicted quantized value (˜1 /4 h /e2 ). It is possible that with systematic tuning the chemical potential via chemical doping and electrical gating, the high-Chern-number QAH state can be realized in the Cr-doped SnTe (111) thin film.

Induced anisotropy in amorphous Sm-Co sputtered films

International Nuclear Information System (INIS)

Chen, K.; Hegde, H.; Cadieu, F.J.

1992-01-01

The variation of the in-the-film-plane anisotropy constant, K u , with composition and the magnitude of the field, H s , applied in plane during the sputter deposition of amorphous Sm x Co 1-x , 0.08≤x≤0.40, thin films has been studied. We demonstrate here that with a large H s , 5.0 kOe, a well defined and large in-the-film-plane anisotropy can be obtained. An exceptionally high value of K u =3.3x10 6 erg/cm 3 has been obtained. For the loop measured along the in-plane hard direction, the opening of the loop was undetectable, and the loop along the easy axis was a perfect rectangle. For certain conditions, the anisotropy field measured perpendicular to the film plane when corrected for demagnetization (N d =4π) was the same as that for the in-plane measurements. It is concluded that surface induced short range ordering was the origin of the anisotropy observed in amorphous films deposited in a magnetic field. The formation mechanism is different from that of the short range ordering induced by field annealing

Manipulating magnetic anisotropy of the ultrathin Co2FeAl full-Heusler alloy film via growth orientation of the Pt buffer layer

International Nuclear Information System (INIS)

Wen, F.S.; Xiang, J.Y.; Hao, C.X.; Zhang, F.; Lv, Y.F.; Wang, W.H.; Hu, W.T.; Liu, Z.Y.

2013-01-01

The ultrathin films of Co 2 FeAl (CFA) full-Heusler alloy were prepared between two Pt layers on MgO single crystals by magnetron sputtering. By controlling the substrate temperature, different growth orientations of the Pt underlayers were realized, and their effects were investigated on the magnetic anisotropy of the ultrathin CFA film. It was revealed that different Pt orientations lead to distinctly different magnetic anisotropy for the sandwiched ultrathin CFA films. The Pt (111) orientation favors the perpendicular anisotropy, while the appearance of partial Pt (001) orientation leads to the quick decrease of perpendicular anisotropy and the complete Pt (001) orientation gives rise to the in-plane anisotropy. With the Pt (111) orientation, the temperature and thickness-induced spin reorientation transitions were investigated in the sandwiched ultrathin CFA films. - Highlights: • Different Pt orientations lead to different magnetic anisotropy for sandwiched ultrathin CFA films. • The Pt (111) orientation favors the perpendicular anisotropy for CFA layer. • Temperature and thickness-induced spin reorientation transitions were investigated in sandwiched ultrathin CFA films. • 0.8 nm CFA film is good candidate as electrode in magnetic tunnel junctions

Magnetic anisotropy of thin sputtered MgB2 films on MgO substrates in high magnetic fields

Directory of Open Access Journals (Sweden)

Savio Fabretti

2014-03-01

Full Text Available We investigated the magnetic anisotropy ratio of thin sputtered polycrystalline MgB2 films on MgO substrates. Using high magnetic field measurements, we estimated an anisotropy ratio of 1.35 for T = 0 K with an upper critical field of 31.74 T in the parallel case and 23.5 T in the perpendicular case. Direct measurements of a magnetic-field sweep at 4.2 K show a linear behavior, confirmed by a linear fit for magnetic fields perpendicular to the film plane. Furthermore, we observed a change of up to 12% of the anisotropy ratio in dependence of the film thickness.

Uniaxial anisotropy in magnetite thin film-Magnetization studies

International Nuclear Information System (INIS)

Wiechec, A.; Korecki, J.; Handke, B.; Kakol, Z.; Owoc, D.; Antolak, D.A.; Kozlowski, A.

2006-01-01

Magnetization and electrical resistivity measurements have been performed on a stoichiometric single crystalline magnetite Fe 3 O 4 thin film (thickness of ca. 500 nm) MBE deposited on MgO (1 0 0) substrate. The aim of these studies was to check the influence of preparation method and sample form (bulk vs. thin film) on magnetic anisotropy properties in magnetite. The film magnetization along versus applied magnetic field has been determined both in the direction parallel and perpendicular to the film surface, and at temperatures above and below the Verwey transition. We have found, in agreement with published results, that the in-plane field of 10 kOe was not sufficient to saturate the sample. This can be understood if some additional factor, on top of the bulk magnetocrystalline anisotropy, is taken into account

Controlling the competing magnetic anisotropy energies in FineMET amorphous thin films with ultra-soft magnetic properties

Directory of Open Access Journals (Sweden)

Ansar Masood

2017-05-01

Full Text Available Thickness dependent competing magnetic anisotropy energies were investigated to explore the global magnetic behaviours of FineMET amorphous thin films. A dominant perpendicular magnetization component in the as-deposited state of thinner films was observed due to high magnetoelastic anisotropy energy which arises from stresses induced at the substrate-film interface. This perpendicular magnetization component decreases with increasing film thickness. Thermal annealing at elevated temperature revealed a significant influence on the magnetization state of the FineMET thin films and controlled annealing steps leads to ultra-soft magnetic properties, making these thin films alloys ideal for a wide range of applications.

Manipulating magnetic anisotropy of the ultrathin Co{sub 2}FeAl full-Heusler alloy film via growth orientation of the Pt buffer layer

Energy Technology Data Exchange (ETDEWEB)

Wen, F.S., E-mail: wenfsh03@126.com [State Key Lab of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao 066004 (China); Xiang, J.Y.; Hao, C.X.; Zhang, F.; Lv, Y.F. [State Key Lab of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao 066004 (China); Wang, W.H. [Institute of Physics, Chinese Academy of Science, Beijing 100080 (China); Hu, W.T.; Liu, Z.Y. [State Key Lab of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao 066004 (China)

2013-12-15

The ultrathin films of Co{sub 2}FeAl (CFA) full-Heusler alloy were prepared between two Pt layers on MgO single crystals by magnetron sputtering. By controlling the substrate temperature, different growth orientations of the Pt underlayers were realized, and their effects were investigated on the magnetic anisotropy of the ultrathin CFA film. It was revealed that different Pt orientations lead to distinctly different magnetic anisotropy for the sandwiched ultrathin CFA films. The Pt (111) orientation favors the perpendicular anisotropy, while the appearance of partial Pt (001) orientation leads to the quick decrease of perpendicular anisotropy and the complete Pt (001) orientation gives rise to the in-plane anisotropy. With the Pt (111) orientation, the temperature and thickness-induced spin reorientation transitions were investigated in the sandwiched ultrathin CFA films. - Highlights: • Different Pt orientations lead to different magnetic anisotropy for sandwiched ultrathin CFA films. • The Pt (111) orientation favors the perpendicular anisotropy for CFA layer. • Temperature and thickness-induced spin reorientation transitions were investigated in sandwiched ultrathin CFA films. • 0.8 nm CFA film is good candidate as electrode in magnetic tunnel junctions.

Perpendicular magnetic anisotropy in Co2FeAl0.5Si0.5/MgO bottom electrodes for magnetic tunnel junctions

International Nuclear Information System (INIS)

Li, X.Q.; Wu, Y.; Gao, S.; Xu, X.G.; Miao, J.; Jiang, Y.

2013-01-01

Perpendicular magnetic anisotropy (PMA) was achieved in annealed Co 2 FeAl 0.5 Si 0.5 (CFAS)/MgO-based multilayers with good thermal stability up to 400 °C and a large anisotropy energy density K u over 2.0 × 10 5 J/m 3 . The thickness of the full-Heusler CFAS film to maintain PMA is up to 4.8 nm in which the co-existence of disordered A2, ordered B2 and fully ordered L2 1 structures is observed. X-ray photoelectron spectroscopy analysis demonstrates that the origin of the PMA is the hybridization between Co 3d and O 2p orbitals at the CFAS/MgO interface. - Highlights: • We achieved perpendicular magnetic anisotropy (PMA) in Co 2 FeAl 0.5 Si 0.5 (4.8 nm) film; • L2 1 , B2 and A2 phases coexist in perpendicular magnetic anisotropic Co 2 FeAl 0.5 Si 0.5 ; • Magnetic properties have strong dependence on the annealing temperature; • The PMA is induced by the hybridization between Co-3d and O-2p orbitals

Achieving perpendicular anisotropy in half-metallic Heusler alloys for spin device applications

Science.gov (United States)

Munira, Kamaram; Romero, Jonathon; Butler, William H.

2014-05-01

Various full Heusler alloys are interfaced with MgO and the magnetic properties of the Heusler-MgO junctions are studied. Next to MgO, the cubic Heusler system distorts to a tetragonal one, thereby inducing an anisotropy. The half-metallicity and nature of anisotropy (in-plane or perpendicular) in the Heusler-MgO system is governed mostly by the interface Heusler layers. There is a trend that Mn-O bonding near the MgO-Heusler junction results in perpendicular anisotropy. The ability to remain half-metallic and have perpendicular anisotropy makes some of these alloys potential candidates as free-layers in Spin Transfer Torque Random Access Memory (STT-RAM) devices, particularly, Cr2MnAs-MgO system with MnAs interface layers and Co2MnSi-MgO system with Mn2 interface layers.

Microstructural and domain effects in epitaxial CoFe2O4 films on MgO with perpendicular magnetic anisotropy

International Nuclear Information System (INIS)

Comes, Ryan; Gu Man; Khokhlov, Mikhail; Lu Jiwei; Wolf, Stuart A.

2012-01-01

CoFe 2 O 4 (CFO) epitaxial thin films of various thicknesses were grown on MgO substrates using the pulsed electron-beam deposition technique. The films have excellent in-plane coherence with the substrate, exhibit layer-by-layer growth and have well-defined thickness fringes in x-ray diffraction measurements. Atomic force microscopy (AFM) measurements indicate that misfit dislocations form in thicker films and the critical thickness for the dislocation formation is estimated. Perpendicular magnetic anisotropy in CFO due to epitaxial in-plane tensile strain from the substrate was found. A stripe-like domain structure in the demagnetized state is demonstrated using magnetic force microscopy (MFM), in agreement with previous predictions. Coercivity increased in thicker films, which is explained by domain wall pinning due to misfit dislocations at the CFO/MgO interface. - Highlights: → X-ray diffraction and rocking curves indicate films are amongst highest quality in the literature. → Domain structure of CoFe 2 O 4 films on MgO was found to be stripe-like using MFM. → Critical thickness for misfit dislocations estimated and agrees with experiment. → Effect of misfit dislocations on surface morphology explained. → Role of dislocations and antiphase boundaries in domain wall formation and motion explained.

Tailoring of Perpendicular Magnetic Anisotropy in Dy13Fe87 Thin Films with Hexagonal Antidot Lattice Nanostructure

Directory of Open Access Journals (Sweden)

Mohamed Salaheldeen

2018-04-01

Full Text Available In this article, the magnetic properties of hexagonally ordered antidot arrays made of Dy13Fe87 alloy are studied and compared with corresponding ones of continuous thin films with the same compositions and thicknesses, varying between 20 nm and 50 nm. Both samples, the continuous thin films and antidot arrays, were prepared by high vacuum e-beam evaporation of the alloy on the top-surface of glass and hexagonally self-ordered nanoporous alumina templates, which serve as substrates, respectively. By using a highly sensitive magneto-optical Kerr effect (MOKE and vibrating sample magnetometer (VSM measurements an interesting phenomenon has been observed, consisting in the easy magnetization axis transfer from a purely in-plane (INP magnetic anisotropy to out-of-plane (OOP magnetization. For the 30 nm film thickness we have measured the volume hysteresis loops by VSM with the easy magnetization axis lying along the OOP direction. Using magnetic force microscopy measurements (MFM, there is strong evidence to suggest that the formation of magnetic domains with OOP magnetization occurs in this sample. This phenomenon can be of high interest for the development of novel magnetic and magneto-optic perpendicular recording patterned media based on template-assisted deposition techniques.

Tuning the effective parameters in (Ta/Cu/[Ni/Co]x/Ta) multilayers with perpendicular magnetic anisotropy

Science.gov (United States)

Ayareh, Zohreh; Moradi, Mehrdad; Mahmoodi, Saman

2018-06-01

In this paper, we report perpendicular magnetic anisotropy (PMA) in a (Ta/Cu/[Ni/Co]x/Ta) multilayers structure. These typical structures usually include a multilayer of ferromagnetic and transition metal thin films. Usually, magnetic anisotropy is characterized by magnetization loops determined by magnetometer or magneto-optical Kerr effect (MOKE). The interface between ferromagnetic and metallic layers plays an important role in magnetic anisotropy evolution from out-of-plane to in-plane in (Ta/Cu/[Ni/Co]/Ta) structure. Obtained results from MOKE and magnetometry of these samples show that they have different easy axes due to change in thickness of Cu as spacer layer and difference in number of repetition of [Ni/Co] stacks.

Controlling magnetic domain wall motion in the creep regime in He+-irradiated CoFeB/MgO films with perpendicular anisotropy

International Nuclear Information System (INIS)

Herrera Diez, L.; García-Sánchez, F.; Adam, J.-P.; Devolder, T.; Eimer, S.; El Hadri, M. S.; Ravelosona, D.; Lamperti, A.; Mantovan, R.; Ocker, B.

2015-01-01

This study presents the effective tuning of perpendicular magnetic anisotropy in CoFeB/MgO thin films by He + ion irradiation and its effect on domain wall motion in a low field regime. Magnetic anisotropy and saturation magnetisation are found to decrease as a function of the irradiation dose which can be related to the observed irradiation-induced changes in stoichiometry at the CoFeB/MgO interface. These changes in the magnetic intrinsic properties of the film are reflected in the domain wall dynamics at low magnetic fields (H) where irradiation is found to induce a significant decrease in domain wall velocity (v). For all irradiation doses, domain wall velocities at low fields are well described by a creep law, where Ln(v) vs. H −1∕4 behaves linearly, up to a maximum field H*, which has been considered as an approximation to the value of the depinning field H dep . In turn, H* ≈ H dep is seen to increase as a function of the irradiation dose, indicating an irradiation-induced extension of the creep regime of domain wall motion

Tailoring perpendicular magnetic anisotropy with graphene oxide membranes

KAUST Repository

Ning, Keyu; Liu, Houfang; Li, Linsen; Li, Huanglong; Feng, Jiafeng; Yang, Baishun; Liu, Xiao; Li, Yuxing; Chen, Yanhui; Wei, Hongxiang; Han, Xiufeng; Mao, Shengcheng; Zhang, Xixiang; Yang, Yi; Ren, Tian-ling

2017-01-01

Graphene oxide (GO) membranes have been widely explored for their excellent physical and chemical properties, and abundant functional groups. In this work, we report the improvement of the perpendicular magnetic anisotropy (PMA) of CoFeB thin films by applying a coating of GO membranes. We observe that the PMA of the CoFeB/MgAl–O stacks is strongly enhanced by the coating of GO membranes and even reaches 0.6 mJ m−2 at room temperature after an annealing process. The critical thickness of the membrane-coated CoFeB for switching the magnetization from the out-of-plane to the in-plane axis exceeds 1.6 nm. First-principle calculations are performed to investigate the contribution of the GO membranes to the magnetic anisotropy energy (MAE). Due to changes in the hybridization of 3d orbitals, varying the location of the C atomic layer with Co changes the contribution of the Co–C stacks to PMA. Thus, the large PMA achieved with GO membranes can be attributed to the orbital hybridization of the C and O atoms with the Co orbitals. These results provide a comprehensive understanding of the PMA and point towards opportunities to achieve multifunctional graphene-composite spintronic devices.

Tailoring perpendicular magnetic anisotropy with graphene oxide membranes

KAUST Repository

Ning, Keyu

2017-11-15

Graphene oxide (GO) membranes have been widely explored for their excellent physical and chemical properties, and abundant functional groups. In this work, we report the improvement of the perpendicular magnetic anisotropy (PMA) of CoFeB thin films by applying a coating of GO membranes. We observe that the PMA of the CoFeB/MgAl–O stacks is strongly enhanced by the coating of GO membranes and even reaches 0.6 mJ m−2 at room temperature after an annealing process. The critical thickness of the membrane-coated CoFeB for switching the magnetization from the out-of-plane to the in-plane axis exceeds 1.6 nm. First-principle calculations are performed to investigate the contribution of the GO membranes to the magnetic anisotropy energy (MAE). Due to changes in the hybridization of 3d orbitals, varying the location of the C atomic layer with Co changes the contribution of the Co–C stacks to PMA. Thus, the large PMA achieved with GO membranes can be attributed to the orbital hybridization of the C and O atoms with the Co orbitals. These results provide a comprehensive understanding of the PMA and point towards opportunities to achieve multifunctional graphene-composite spintronic devices.

Influence of domain structure induced coupling on magnetization reversal of Co/Pt/Co film with perpendicular anisotropy

Energy Technology Data Exchange (ETDEWEB)

Matczak, Michał [Institute of Molecular Physics, Polish Academy of Sciences, M. Smoluchowskiego 17, 60-179 Poznań (Poland); NanoBioMedical Centre, Adam Mickiewicz University, Umultowska 85, 61-614 Poznań (Poland); Schäfer, Rudolf [Leibniz Institute for Solid State and Materials Research (IFW) Dresden, Institute for Metallic Materials, PO 270116, D-01171 Dresden (Germany); Dresden University of Technology, Institute for Materials Science, D-01062 Dresden (Germany); Urbaniak, Maciej; Kuświk, Piotr; Szymański, Bogdan; Schmidt, Marek; Aleksiejew, Jacek [Institute of Molecular Physics, Polish Academy of Sciences, M. Smoluchowskiego 17, 60-179 Poznań (Poland); Stobiecki, Feliks, E-mail: Feliks.Stobiecki@ifmpan.poznan.pl [Institute of Molecular Physics, Polish Academy of Sciences, M. Smoluchowskiego 17, 60-179 Poznań (Poland); NanoBioMedical Centre, Adam Mickiewicz University, Umultowska 85, 61-614 Poznań (Poland)

2017-01-15

A magnetic multilayer of substrate/Pt-15 nm/Co-0.8 nm/Pt-wedge 0–7 nm/Co-0.6 nm/Pt-2 nm structure is characterized by a perpendicular anisotropy of the Co layers and by graded interlayer coupling between them. Using magnetooptical Kerr microscopy we observed a distinct influence of magnetic domains in one Co layer on the nucleation field and positions of nucleation sites of reversed domains in the second Co layer. For sufficiently strong interlayer coupling a replication of magnetic domains from the magnetically harder layer to the magnetically softer layer is observed. - Highlights: • Co/Pt-wedge/Co layered film is characterized by a gradient of interlayer coupling. • Magnetic field controls propagation of straight domain wall. • Replication of magnetic domains in multilayers with strong ferromagnetic coupling. • Coupling induced by domains influences magnetization reversal of spin valves.

Effect of anisotropy on anomalous Hall effect in Tb-Fe thin films

International Nuclear Information System (INIS)

Babu, V. Hari; Markandeyulu, G.; Subrahmanyam, A.

2009-01-01

The electrical and Hall resistivities of Tb x Fe 100-x thin films in the temperature range 13-300 K were investigated. The sign of Hall resistivity at 300 K is found to change from positive for x=28 film to negative for x=30 film, in accordance with the compensation of Tb and Fe moments. All the films are seen to have planar magnetic anisotropy at 13 K. The temperature coefficients of electrical resistivities of the amorphous films with 19≤x≤51 are seen to be negative. The temperature dependence of Hall resistivity of these films is explained on the basis of random magnetic anisotropy model. The temperature dependences of Hall resistivities of the x=22 and 41 films are seen to exhibit a nonmonotonous behavior due to change in anisotropy from perpendicular to planar. The same behavior is considered for the explanation regarding the probable formation of Berry phase curvature in these films.

Perpendicular magnetic anisotropy of CoFeB\\Ta bilayers on ALD HfO2

Directory of Open Access Journals (Sweden)

Bart F. Vermeulen

2017-05-01

Full Text Available Perpendicular magnetic anisotropy (PMA is an essential condition for CoFe thin films used in magnetic random access memories. Until recently, interfacial PMA was mainly known to occur in materials stacks with MgO\\CoFe(B interfaces or using an adjacent crystalline heavy metal film. Here, PMA is reported in a CoFeB\\Ta bilayer deposited on amorphous high-κ dielectric (relative permittivity κ=20 HfO2, grown by atomic layer deposition (ALD. PMA with interfacial anisotropy energy Ki up to 0.49 mJ/m2 appears after annealing the stacks between 200°C and 350°C, as shown with vibrating sample magnetometry. Transmission electron microscopy shows that the decrease of PMA starting from 350°C coincides with the onset of interdiffusion in the materials. High-κ dielectrics are potential enablers for giant voltage control of magnetic anisotropy (VCMA. The absence of VCMA in these experiments is ascribed to a 0.6 nm thick magnetic dead layer between HfO2 and CoFeB. The results show PMA can be easily obtained on ALD high-κ dielectrics.

Controlling magnetic domain wall motion in the creep regime in He{sup +}-irradiated CoFeB/MgO films with perpendicular anisotropy

Energy Technology Data Exchange (ETDEWEB)

Herrera Diez, L., E-mail: liza.herrera-diez@ief.u-psud.fr; García-Sánchez, F.; Adam, J.-P.; Devolder, T.; Eimer, S.; El Hadri, M. S.; Ravelosona, D. [Institut d' Electronique Fondamentale, Université Paris-Sud, UMR CNRS 8622, 91405 Orsay (France); Lamperti, A.; Mantovan, R. [Laboratorio MDM, IMM-CNR, Via C. Olivetti 2, 20864 Agrate (MB) (Italy); Ocker, B. [Singulus Technology AG, Hanauer Landstrasse 103, 63796 Kahl am Main (Germany)

2015-07-20

This study presents the effective tuning of perpendicular magnetic anisotropy in CoFeB/MgO thin films by He{sup +} ion irradiation and its effect on domain wall motion in a low field regime. Magnetic anisotropy and saturation magnetisation are found to decrease as a function of the irradiation dose which can be related to the observed irradiation-induced changes in stoichiometry at the CoFeB/MgO interface. These changes in the magnetic intrinsic properties of the film are reflected in the domain wall dynamics at low magnetic fields (H) where irradiation is found to induce a significant decrease in domain wall velocity (v). For all irradiation doses, domain wall velocities at low fields are well described by a creep law, where Ln(v) vs. H{sup −1∕4} behaves linearly, up to a maximum field H*, which has been considered as an approximation to the value of the depinning field H{sub dep}. In turn, H* ≈ H{sub dep} is seen to increase as a function of the irradiation dose, indicating an irradiation-induced extension of the creep regime of domain wall motion.

Magnetic anisotropies and magnetic switching in Co films

Science.gov (United States)

Bland, J. A. C.; Baird, M. J.; Leung, H. T.; Ives, A. J. R.; Mackay, K. D.; Hughes, H. P.

1992-07-01

We have used the magneto-optical Kerr effect to investigate the role of the substrate and growth conditions in determining the magnetic switching behaviour of Co films in the thickness range 100-200 Å supported by GaAs(001) and Si(111) substrates. We discuss the anisotropic magnetic hysteresis behaviour observed for Co/GaAs and Co/Si films in terms of coherent rotation of the magnetisation vector during magnetic switching. Equivalent films supported by glass substrates are found to be almost isotropic in-plane. The in-plane coercive and saturation fields are observed to lie in the range 20-80 Oe but perpendicular saturation fields of 25 and 19 kOe are found for the Co/Si and Co/GaAs systems respectively which substantially exceed the demagnetising field in each case. The measured perpendicular anisotropy fields differ strongly from the values for hcp and bcc Co and are attributed to the details of the interface and film structure. We also report strongly frequency dependent magnetic switching behaviour in these Co films.

Magneto-Seebeck effect in magnetic tunnel junctions with perpendicular anisotropy

Directory of Open Access Journals (Sweden)

Keyu Ning

2017-01-01

Full Text Available As one invigorated filed of spin caloritronics combining with spin, charge and heat current, the magneto-Seebeck effect has been experimentally and theoretically studied in spin tunneling thin films and nanostructures. Here we analyze the tunnel magneto-Seebeck effect in magnetic tunnel junctions with perpendicular anisotropy (p-MTJs under various measurement temperatures. The large tunnel magneto-Seebeck (TMS ratio up to −838.8% for p-MTJs at 200 K is achieved, with Seebeck coefficient S in parallel and antiparallel states of 6.7 mV/K and 62.9 mV/K, respectively. The temperature dependence of the tunnel magneto-Seebeck can be attributed to the contributing transmission function and electron states at the interface between CoFeB electrode and MgO barrier.

High Field Linear Magnetoresistance Sensors with Perpendicular Anisotropy L10-FePt Reference Layer

Directory of Open Access Journals (Sweden)

X. Liu

2016-01-01

Full Text Available High field linear magnetoresistance is an important feature for magnetic sensors applied in magnetic levitating train and high field positioning measurements. Here, we investigate linear magnetoresistance in Pt/FePt/ZnO/Fe/Pt multilayer magnetic sensor, where FePt and Fe ferromagnetic layers exhibit out-of-plane and in-plane magnetic anisotropy, respectively. Perpendicular anisotropy L10-FePt reference layer with large coercivity and high squareness ratio was obtained by in situ substrate heating. Linear magnetoresistance is observed in this sensor in a large range between +5 kOe and −5 kOe with the current parallel to the film plane. This L10-FePt based sensor is significant for the expansion of linear range and the simplification of preparation for future high field magnetic sensors.

Enhancement of perpendicular magnetic anisotropy and anomalous hall effect in Co/Ni multilayers

Energy Technology Data Exchange (ETDEWEB)

Liu, Yiwei; Zhang, Jingyan, E-mail: jyzhang@ustb.edu.cn; Jiang, Shaolong; Liu, Qianqian; Li, Xujing; Yu, Guanghua, E-mail: ghyu@mater.ustb.edu.cn

2016-12-15

The perpendicular magnetic anisotropy (PMA) and the anomalous Hall effect (AHE) in Co/Ni multilayer were optimized by manipulating its interface structure (inducing HfO{sub 2} capping layer and Pt insertion) and post-annealing treatment. A strong PMA can be obtained in Co/Ni multilayers with HfO{sub 2} capping layer even after annealing at 400 °C. The heavy metal Hf may improve the interfacial spin-orbit coupling, which responsible for the enhanced PMA and high annealing stability. Moreover, the multilayer containing HfO{sub 2} capping layer also exhibited high saturation anomalous Hall resistivity through post-annealing, which is 0.85 μΩ cm after annealing at 375 °C, 211% larger than in the sample at deposited state which is only 0.27 μΩ cm. The enhancement of AHE is mainly attributed to the interface scattering through post-annealing treatment. - Highlights: • The perpendicular magnetic anisotropy and anomalous Hall effect of Co/Ni multilayer films were studied. • The PMA thermal stability of the Co/Ni ML can be enhanced by HfO{sub 2} capping layer and Pt insertion. • The anomalous Hall resistivity of Co/Ni ML covered by HfO{sub 2} was enhanced by post-annealing treatment.

Variable substrate temperature deposition of CoFeB film on Ta for manipulating the perpendicular coercive forces

Science.gov (United States)

Lakshmanan, Saravanan; Rao, Subha Krishna; Muthuvel, Manivel Raja; Chandrasekaran, Gopalakrishnan; Therese, Helen Annal

2017-08-01

Magnetization of Ta/CoFeB/Ta trilayer films with thick layer of CoFeB deposited under different substrate temperatures (Ts) via ultra-high vacuum DC sputtering technique has been measured with the applied magnetic field parallel and perpendicular to the plane of the film respectively to study the perpendicular coercive forces of the film. The samples were further analyzed for its structural, topological, morphological, and electrical transport properties. The core chemical states for the elements present in the CoFeB thin film were analyzed by XPS studies. Magnetization studies reveal the existence of perpendicular coercive forces in CoFeB films deposited only at certain temperatures such as RT, 450 °C, 475 °C and 500 °C. CoFeB film deposited at 475 °C exhibited a maximum coercivity of 315 Oe and a very low saturation magnetization (Ms) of 169 emu/cc in perpendicular direction. This pronounced effect in perpendicular coercive forces observed for CoFeB475 could be attributed to the effect of temperature in enhancing the crystallization of the film at the Ta/CoFeB interfaces. However at temperatures higher than 475 °C the destruction of the Ta/CoFeB interface due to intermixing of Ta and CoFeB results in the disappearance of magnetic anisotropy.

Spin-orbit torque induced switching in a magnetic insulator thin film with perpendicular magnetic anisotropy

Science.gov (United States)

Li, J. X.; Yu, G. Q.; Tang, C.; Wang, K. L.; Shi, J.

Spin-orbit torque (SOT) has been demonstrated to be efficient to manipulate the magnetization in heavy-metal/ferromagnetic metal (HM/FMM) heterostructures. In HM/magnetic insulator (MI) heterostructures, charge currents do not flow in MI, but pure spin currents generated by the spin Hall effect in HM can enter the MI layer to cause magnetization dynamics. Here we report SOT-induced magnetization switching in Tm3Fe5O12/Pt heterostructures, where Tm3Fe5O12 (TmIG) is a MI grown by pulsed laser deposition with perpendicular magnetic anisotropy. The anomalous Hall signal in Pt is used as a probe to detect the magnetization switching. Effective magnetic fields due to the damping-like and field-like torques are extracted using a harmonic Hall detection method. The experiments are carried out in heterostructures with different TmIG film thicknesses. Both the switching and harmonic measurements indicate a more efficient SOT generation in HM/MI than in HM/FMM heterostructures. Our comprehensive experimental study and detailed analysis will be presented. This work was supported as part of the SHINES, an Energy Frontier Research Center funded by the US Department of Energy, Office of Science, Basic Energy Sciences under Award No. SC0012670.

Laser heating and oxygen partial pressure effects on the dynamic magnetic properties of perpendicular CoFeAlO films

Energy Technology Data Exchange (ETDEWEB)

Wu, Di [Key Laboratory of Micro and Nano Photonic Structures (Ministry of Education), Department of Optical Science and Engineering, Fudan University, Shanghai 200433 (China); Li, Wei [State Key Laboratory of Precision Spectroscopy and Department of Physics, East China Normal University, Shanghai 200062 (China); Tang, Minghong [Key Laboratory of Micro and Nano Photonic Structures (Ministry of Education), Department of Optical Science and Engineering, Fudan University, Shanghai 200433 (China); Zhang, Zongzhi, E-mail: zzzhang@fudan.edu.cn [Key Laboratory of Micro and Nano Photonic Structures (Ministry of Education), Department of Optical Science and Engineering, Fudan University, Shanghai 200433 (China); Lou, Shitao [State Key Laboratory of Precision Spectroscopy and Department of Physics, East China Normal University, Shanghai 200062 (China); Jin, Q.Y. [Key Laboratory of Micro and Nano Photonic Structures (Ministry of Education), Department of Optical Science and Engineering, Fudan University, Shanghai 200433 (China); State Key Laboratory of Precision Spectroscopy and Department of Physics, East China Normal University, Shanghai 200062 (China)

2016-07-01

The impact of oxidation and laser heating on the dynamic magnetic properties of perpendicularly magnetized Co{sub 50}Fe{sub 25}Al{sub 25}O films has been studied by time-resolved magneto-optical Kerr effect in a fs-laser pump-probe setup. We find that pump laser fluence F{sub p} can affect the effective magnetic anisotropy field and thus the precession frequency f seriously, leading to an increased dependence of effective magnetic damping factor α{sub eff} on the external field at higher fluences. Moreover, the α{sub eff} increases with increasing the oxygen partial pressure P{sub O2} while the uniaxial anisotropy energy K{sub u} and Landau factor g decrease, owing to the increased proportion of superparamagnetic CoFe oxides formed by over-oxidation. By optimizing both the F{sub p} and P{sub O2}, the intrinsic damping factor is determined to be lower than 0.028 for the perpendicular film showing a uniaxial anisotropy energy as high as 4.3×10{sup 6} erg/cm{sup 3}. The results in this study provide a promising approach to manipulate the magnetic parameters for possible applications in spintronic devices. - Highlights: • A new kind of perpendicular thin film material, oxidized CoFeAl, has been fabricated. • The precession frequency and effective damping are strongly affected by higher fluence. • The effective damping factor increases with oxygen partial pressure. • The intrinsic damping factor is below 0.028 for the CFAO film with K{sub u}=4.3×10{sup 6} erg/cm{sup 3}.

Highly (001) oriented L1{sub 0}-CoPt/TiN multilayer films on glass substrates with perpendicular magnetic anisotropy

Energy Technology Data Exchange (ETDEWEB)

An, Hongyu; Sannomiya, Takumi; Muraishi, Shinji; Nakamura, Yoshio; Shi, Ji, E-mail: shi.j.aa@m.titech.ac.jp [Department of Metallurgy and Ceramics Science, Tokyo Institute of Technology, 2-12-1, Ookayama, Meguro-ku, Tokyo 152-8552 (Japan); Xie, Qian; Zhang, Zhengjun [Key Laboratory of Advanced Materials, School of Materials Science and Engineering, Tsinghua University, Beijing 100084 (China); Wang, Jian [National Institute for Materials Science (NIMS), Sengen 1-2-1, Tsukuba, Ibaraki 305-0047 (Japan)

2015-03-15

To obtain strong perpendicular magnetic anisotropy (PMA) based on L1{sub 0} structure for magnetic storage devices, costly single crystalline substrates are generally required to achieve (001) texture. Recently, various studies also have focused on depositing different kinds of seed layers on glass or other amorphous substrates to promote (001) preferred orientation of L1{sub 0} CoPt and FePt. TiN is a very promising seed layer material because of its cubic crystalline structure (similar to MgO) and excellent diffusion barring property even at high temperatures. In the present work, highly (001) oriented L1{sub 0}-CoPt/TiN multilayer films have been successfully deposited on glass substrates. After annealing at 700 °C, the film exhibits PMA, and a strong (001) peak is detected from the x-ray diffraction profiles, indicating the ordering transformation of CoPt layers from fcc (A1) to L1{sub 0} structure. It also is found that alternate deposition of cubic TiN and CoPt effectively improves the crystallinity and (001) preferred orientation of CoPt layers. This effect is verified by the substantial enhancement of (001) reflection and PMA with increasing the period number of the multilayer films.

Tuning stress-induced magnetic anisotropy and high frequency properties of FeCo films deposited on different curvature substrates

International Nuclear Information System (INIS)

Wang, Z.K.; Feng, E.X.; Liu, Q.F.; Wang, J.B.; Xue, D.S.

2012-01-01

It is important to control magnetic anisotropy of ferromagnetic materials. In this work, FeCo thin films are deposited on the curving substrates by electrochemical deposition to adjust the stress-induced magnetic anisotropy. The compressive stress is produced in the as-deposited films after the substrates are flattened. A simplified theoretical model of ferromagnetic resonance is utilized to measure the intrinsic magnetic anisotropy field and saturation magnetization. The results show that the stress-induced magnetic anisotropy and the resonance frequency increase with the increase of substrate curvature. The induced easy axis is perpendicular to the compressive stress direction.

Nanoconstriction spin-Hall oscillator with perpendicular magnetic anisotropy

Science.gov (United States)

Divinskiy, B.; Demidov, V. E.; Kozhanov, A.; Rinkevich, A. B.; Demokritov, S. O.; Urazhdin, S.

2017-07-01

We experimentally study spin-Hall nano-oscillators based on [Co/Ni] multilayers with perpendicular magnetic anisotropy. We show that these devices exhibit single-frequency auto-oscillations at current densities comparable to those for in-plane magnetized oscillators. The demonstrated oscillators exhibit large magnetization precession amplitudes, and their oscillation frequency is highly tunable by the electric current. These features make them promising for applications in high-speed integrated microwave circuits.

NANO-MULTILAYERS WITH HIGH PERPENDICULAR ANISOTROPY FOR MAGNETIC RECORDING

Institute of Scientific and Technical Information of China (English)

T. Yang; B.H. Li; K. Kang; T. Suzuki

2003-01-01

(FePt/Ag)n nano-multilayers were deposited on MgO (100) single crystal with laser ablation and then subjected to annealing. FePt L1o grains with (001) texture and thus a large perpendicular magnetic anisotropy constant Ku of the order of 106J/m3 were formed. A thick Ag layer is found to be favorable for decreasing the dispersion of the easy axis for magnetization. The measurement of time decay of magnetization gave rise to a small activation volume of the order of 10-25 m3, showing the promising of being the recording medium for future high density perpendicular recording.

Magnetoresistance anisotropy of ultrathin epitaxial La0.83Sr0.17MnO3 films

Science.gov (United States)

Balevičius, Saulius; Tornau, Evaldas E.; ŽurauskienÄ--, Nerija; Stankevič, Voitech; Šimkevičius, Česlovas; TolvaišienÄ--, Sonata; PlaušinaitienÄ--, Valentina; Abrutis, Adulfas

2017-12-01

We present the study of temperature dependence of resistivity (ρ), magnetoresistance (MR), and magnetoresistance anisotropy (AMR) of thin epitaxial La0.83Sr0.17MnO3 films. The films with thickness from 4 nm to 140 nm were grown on an NdGaO3 (001) substrate by a pulsed injection metal organic chemical vapor deposition technique. We demonstrate that the resistivity of these films significantly increases and the temperature Tm of the resistivity maximum in ρ(T) dependence decreases with the decrease of film thickness. The anisotropy of ρ(T) dependence with respect to the electrical current direction along the [100] or [010] crystallographic axis of the film is found for ultrathin films (4-8 nm) at temperatures close to Tm. Both MR and AMR, measured in magnetic fields up to 0.7 T applied in the film plane parallel and perpendicular to the current direction, have shown strong dependence on the film thickness. It was also found that the anisotropy of magnetoresistance could change its sign from positive (thicker films) to negative (ultrathin films) and obtain very small values at a certain intermediate thickness (20 nm) when the current is flowing perpendicular to the easy magnetization axis [010]. While the positive AMR effect was assigned to the conventional magnetic ordering of manganites, the AMR of ultrathin films was influenced by the pinning of magnetization to the easy axis. The temperature dependence and change of the AMR sign with film thickness is shown to be well described by the two-region model (more strained closer to the film substrate and more relaxed further from it) assuming that the relative concentration of both regions changes with the film thickness. The possibility to use the effect of the AMR compensation for the development of scalar in-plane magnetic field sensors is discussed.

Determination of the out-of-plane anisotropy contributions (first and second anisotropy terms) in amorphous Nd-Co thin films by micromagnetic numerical simulations

Science.gov (United States)

Alvarez-Prado, L. M.; Cid, R.; Morales, R.; Diaz, J.; Vélez, M.; Rubio, H.; Hierro-Rodriguez, A.; Alameda, J. M.

2018-06-01

Amorphous Nd-Co thin films exhibit stripe shaped periodic magnetic domains with local out-of-plane magnetization components due to their perpendicular magnetic anisotropy. This anisotropy has been quantified in a fairly simple way by reproducing the experimental magnetization curves by means of micromagnetic numerical simulations. The simulations show that the first (K1) and second (K2) anisotropy constants must be used to properly describe the variation of the stripe domains with the in plane applied magnetic field. A strong temperature dependence of both K1 and K2 has been obtained between 10 K and room temperature. This anisotropy behavior is characteristic of two magnetically coupled 3d-4f sublattices with competing anisotropies.

Micromagnetic study of skyrmion stability in confined magnetic structures with perpendicular anisotropy

Science.gov (United States)

Novak, R. L.; Garcia, F.; Novais, E. R. P.; Sinnecker, J. P.; Guimarães, A. P.

2018-04-01

Skyrmions are emerging topological spin structures that are potentially revolutionary for future data storage and spintronics applications. The existence and stability of skyrmions in magnetic materials is usually associated to the presence of the Dzyaloshinskii-Moriya interaction (DMI) in bulk magnets or in magnetic thin films lacking inversion symmetry. While some methods have already been proposed to generate isolated skyrmions in thin films with DMI, a thorough study of the conditions under which the skyrmions will remain stable in order to be manipulated in an integrated spintronic device are still an open problem. The stability of such structures is believed to be a result of ideal combinations of perpendicular magnetic anisotropy (PMA), DMI and the interplay between geometry and magnetostatics. In the present work we show some micromagnetic results supporting previous experimental observations of magnetic skyrmions in spin-valve stacks with a wide range of DMI values. Using micromagnetic simulations of cobalt-based disks, we obtain the magnetic ground state configuration for several values of PMA, DMI and geometric parameters. Skyrmion numbers, corresponding to the topological charge, are calculated in all cases and confirm the occurrence of isolated, stable, axially symmetric skyrmions for several combinations of DMI and anisotropy constant. The stability of the skyrmions in disks is then investigated under magnetic field and spin-polarized current, in finite temperature, highlighting the limits of applicability of these spin textures in spintronic devices.

Low-field magnetoresistance anisotropy in strained ultrathin Pr0.67Sr0.33MnO3 films

International Nuclear Information System (INIS)

Wang, H.S.; Li, Q.

1999-01-01

The authors have studied the anisotropic low-field magnetoresistance (LFMR) in ultrathin Pr 0.67 sr 0.33 MnO 3 (PSMO) films epitaxially grown on LaAlO 3 (LAO), STiO 3 (STO), and NdGaO 3 (NGO) substrates which impose compressive, tensile, and nearly-zero strains in the films. The compressively-strained films show a very large negative LFMR in a perpendicular magnetic field and a much smaller MR in a parallel field, while the tensile-strain films show positive LFMR in a perpendicular field and negative MR in a parallel field. The results are interpreted based on the strain-induced magnetic anisotropy

Room temperature deposition of perpendicular magnetic anisotropic Co{sub 3}Pt thin films on glass substrate

Energy Technology Data Exchange (ETDEWEB)

Chen, Yu-Shen; Dai, Hong-Yu; Hsu, Yi-Wei [Department of Chemical Engineering and Materials Science, Yuan-Ze University, Chung-Li 32003, Taiwan (China); Ou, Sin-Liang, E-mail: slo@mail.dyu.edu.tw [Department of Materials Science and Engineering, Da-Yeh University, Changhua 51591, Taiwan (China); Chen, Shi-Wei [National Synchrotron Radiation Research Center (NSRRC), Hsinchu 300, Taiwan (China); Lu, Hsi-Chuan; Wang, Sea-Fue [Department of Materials and Mineral Resources Engineering, National Taipei University of Technology, Taipei 106, Taiwan (China); Sun, An-Cheng, E-mail: acsun@saturn.yzu.edu.tw [Department of Chemical Engineering and Materials Science, Yuan-Ze University, Chung-Li 32003, Taiwan (China)

2017-03-01

Co{sub 3}Pt alloy thin films were deposited on the glass substrate at room temperature (RT) and 300 °C, which showed high perpendicular magnetic anisotropy (PMA) and isotropy magnetic behaviors, respectively. Co{sub 3}Pt HCP (0002) planes grew along the substrate plane for the films deposited at RT. The easy axis [0001] was consequently vertical to the substrate surface and obtained the predominant PMA. Large magnetic domains and sharp boundary also supported high PMA in RT-deposited samples. On the other hand, the PMA was significantly decreased with increasing the deposition temperature from RT to 300 °C. Hard HCP(0002) and soft A1(111) co-existed in the film and the magnetic exchanged coupling between these two phases induced isotropy magnetic behavior. In addition, the various thicknesses (t) of the RT-deposited Co{sub 3}Pt films were deposited with different base pressures prior to sputtering. The Kerr rotation loops showed high PMA and out-of-plane squareness (S{sub ⊥}) of ~0.9 were found in low base pressure chamber. Within high base pressure chamber, Co{sub 3}Pt films just show magnetic isotropy behaviors. This study provides a fabrication method for the preparation of high PMA HCP-type Co{sub 3}Pt films on the glass substrate without any underlayer at RT. The results could be the base for future development of RT-deposited magnetic alloy thin film with high PMA. - Highlights: • Fabricated high perpendicular magnetic anisotropy Co{sub 3}Pt thin film on glass substrate. • Prepared HCP Co{sub 3}Pt thin film at room temperature. • The key to enhance the PMA of the Co{sub 3}Pt films. • Thinner film is good to fabricate PMA Co{sub 3}Pt thin films.

Exchange bias and perpendicular anisotropy study of ultrathin Pt-Co-Pt-IrMn multilayers sputtered on float glass

Science.gov (United States)

Laval, M.; Lüders, U.; Bobo, J. F.

2007-09-01

We have prepared ultrathin Pt-Co-Pt-IrMn polycrystalline multilayers on float-glass substrates by DC magnetron sputtering. We have determined the optimal set of thickness for both Pt layers, the Co layer and the IrMn biasing layer so that these samples exhibit at the same time out-of-plane magnetic anisotropy and exchange bias. Kerr microscopy domain structure imaging evidences an increase of nucleation rate accompanied with inhomogeneous magnetic behavior in the case of exchange-biased films compared to Pt-Co-Pt trilayers. Polar hysteresis loops are measured in obliquely applied magnetic field conditions, allowing us to determine both perpendicular anisotropy effective constant Keff and exchange-bias coupling JE, which are significantly different from the ones determined by standard switching field measurements.

Exchange bias and perpendicular anisotropy study of ultrathin Pt-Co-Pt-IrMn multilayers sputtered on float glass

International Nuclear Information System (INIS)

Laval, M.; Lueders, U.; Bobo, J.F.

2007-01-01

We have prepared ultrathin Pt-Co-Pt-IrMn polycrystalline multilayers on float-glass substrates by DC magnetron sputtering. We have determined the optimal set of thickness for both Pt layers, the Co layer and the IrMn biasing layer so that these samples exhibit at the same time out-of-plane magnetic anisotropy and exchange bias. Kerr microscopy domain structure imaging evidences an increase of nucleation rate accompanied with inhomogeneous magnetic behavior in the case of exchange-biased films compared to Pt-Co-Pt trilayers. Polar hysteresis loops are measured in obliquely applied magnetic field conditions, allowing us to determine both perpendicular anisotropy effective constant K eff and exchange-bias coupling J E , which are significantly different from the ones determined by standard switching field measurements

Perpendicular magnetic anisotropy in granular multilayers of CoPd alloyed nanoparticles

Science.gov (United States)

Vivas, L. G.; Rubín, J.; Figueroa, A. I.; Bartolomé, F.; García, L. M.; Deranlot, C.; Petroff, F.; Ruiz, L.; González-Calbet, J. M.; Pascarelli, S.; Brookes, N. B.; Wilhelm, F.; Chorro, M.; Rogalev, A.; Bartolomé, J.

2016-05-01

Co-Pd multilayers obtained by Pd capping of pre-deposited Co nanoparticles on amorphous alumina are systematically studied by means of high-resolution transmission electron microscopy, x-ray diffraction, extended x-ray absorption fine structure, SQUID-based magnetometry, and x-ray magnetic circular dichroism. The films are formed by CoPd alloyed nanoparticles self-organized across the layers, with the interspace between the nanoparticles filled by the non-alloyed Pd metal. The nanoparticles show atomic arrangements compatible with short-range chemical order of L 10 strucure type. The collective magnetic behavior is that of ferromagnetically coupled particles with perpendicular magnetic anisotropy, irrespective of the amount of deposited Pd. For increasing temperature three magnetic phases are identified: hard ferromagnetic with strong coercive field, soft-ferromagnetic as in an amorphous asperomagnet, and superparamagnetic. Increasing the amount of Pd in the system leads to both magnetic hardness increment and higher transition temperatures. Magnetic total moments of 1.77(4) μB and 0.45(4) μB are found at Co and Pd sites, respectively, where the orbital moment of Co, 0.40(2) μB, is high, while that of Pd is negligible. The effective magnetic anisotropy is the largest in the capping metal series (Pd, Pt, W, Cu, Ag, Au), which is attributed to the interparticle interaction between de nanoparticles, in addition to the intraparticle anisotropy arising from hybridization between the 3 d -4 d bands associated to the Co and Pd chemical arrangement in a L 10 structure type.

Perpendicular magnetic anisotropy in Ta|Co40Fe40B20|MgAl2O4 structures and perpendicular CoFeB|MgAl2O4|CoFeB magnetic tunnel junction

KAUST Repository

Tao, B. S.

2014-09-08

Magnetic properties of Co40Fe40B20(CoFeB) thin films sandwiched between Ta and MgAl2O4layers have been systematically studied. For as-grown state, Ta/CoFeB/MgAl2O4structures exhibit good perpendicular magnetic anisotropy (PMA) with interface anisotropy Ki=1.22erg/cm2, which further increases to 1.30erg/cm2after annealing, while MgAl2O4/CoFeB/Ta multilayer shows in-plane magnetic anisotropy and must be annealed in order to achieve PMA. For bottom CoFeB layer, the thickness window for PMA is from 0.6 to 1.0nm, while that for top CoFeB layer is between 0.8 and 1.4nm. Perpendicular magnetic tunnel junctions (p-MTJs) with a core structure of CoFeB/MgAl2O4/CoFeB have also been fabricated and tunneling magnetoresistance ratio of about 36% at room temperature and 63% at low temperature have been obtained. The intrinsic excitations in the p-MTJs have been identified by inelastic electron-tunneling spectroscopy.

Perpendicular magnetic anisotropy in Ta|Co40Fe40B20|MgAl2O4 structures and perpendicular CoFeB|MgAl2O4|CoFeB magnetic tunnel junction

KAUST Repository

Tao, B. S.; Li, D. L.; Yuan, Z. H.; Liu, H. F.; Ali, S. S.; Feng, J. F.; Wei, H. X.; Han, X. F.; Liu, Y.; Zhao, Y. G.; Zhang, Q.; Guo, Zaibing; Zhang, Xixiang

2014-01-01

Magnetic properties of Co40Fe40B20(CoFeB) thin films sandwiched between Ta and MgAl2O4layers have been systematically studied. For as-grown state, Ta/CoFeB/MgAl2O4structures exhibit good perpendicular magnetic anisotropy (PMA) with interface anisotropy Ki=1.22erg/cm2, which further increases to 1.30erg/cm2after annealing, while MgAl2O4/CoFeB/Ta multilayer shows in-plane magnetic anisotropy and must be annealed in order to achieve PMA. For bottom CoFeB layer, the thickness window for PMA is from 0.6 to 1.0nm, while that for top CoFeB layer is between 0.8 and 1.4nm. Perpendicular magnetic tunnel junctions (p-MTJs) with a core structure of CoFeB/MgAl2O4/CoFeB have also been fabricated and tunneling magnetoresistance ratio of about 36% at room temperature and 63% at low temperature have been obtained. The intrinsic excitations in the p-MTJs have been identified by inelastic electron-tunneling spectroscopy.

Variable substrate temperature deposition of CoFeB film on Ta for manipulating the perpendicular coercive forces

Energy Technology Data Exchange (ETDEWEB)

Lakshmanan, Saravanan; Rao, Subha Krishna [Nanotechnology Research Centre, SRM University, Kattankulathur, Chennai 603203 (India); Muthuvel, Manivel Raja [Defence Metallurgical Research Laboratory (DMRL), Hyderabad 500058 (India); Chandrasekaran, Gopalakrishnan [Nanotechnology Research Centre, SRM University, Kattankulathur, Chennai 603203 (India); Therese, Helen Annal, E-mail: helen.a@ktr.srmuniv.ac.in [Nanotechnology Research Centre, SRM University, Kattankulathur, Chennai 603203 (India)

2017-08-01

Highlights: • Ta/CoFeB(50 nm)/Ta thin films were deposited at various substrate temperatures (T{sub s}). • CoFeB films deposited at T{sub s} such as RT, 450 °C, 475 °C and 500 °C exhibited perpendicular coercivity. • CoFeB deposited at 475 °C displayed a higher coercivity of 315 Oe and a low M{sub s} of 169 emu/cc. • The enhanced crystallization of CoFeB at the Ta/CoFeB interface results in higher H{sub c} (⟂). - Abstract: Magnetization of Ta/CoFeB/Ta trilayer films with thick layer of CoFeB deposited under different substrate temperatures (T{sub s}) via ultra-high vacuum DC sputtering technique has been measured with the applied magnetic field parallel and perpendicular to the plane of the film respectively to study the perpendicular coercive forces of the film. The samples were further analyzed for its structural, topological, morphological, and electrical transport properties. The core chemical states for the elements present in the CoFeB thin film were analyzed by XPS studies. Magnetization studies reveal the existence of perpendicular coercive forces in CoFeB films deposited only at certain temperatures such as RT, 450 °C, 475 °C and 500 °C. CoFeB film deposited at 475 °C exhibited a maximum coercivity of 315 Oe and a very low saturation magnetization (M{sub s}) of 169 emu/cc in perpendicular direction. This pronounced effect in perpendicular coercive forces observed for CoFeB475 could be attributed to the effect of temperature in enhancing the crystallization of the film at the Ta/CoFeB interfaces. However at temperatures higher than 475 °C the destruction of the Ta/CoFeB interface due to intermixing of Ta and CoFeB results in the disappearance of magnetic anisotropy.

Spin-Orbit Torque-Assisted Switching in Magnetic Insulator Thin Films with Perpendicular Magnetic Anisotropy

Science.gov (United States)

Wu, Mingzhong

As an in-plane charge current flows in a heavy metal film with spin-orbit coupling, it produces a torque that can induce magnetization switching in a neighboring ferromagnetic metal film. Such spin-orbit torque (SOT)-induced switching has been studied extensively in recent years and has shown higher efficiency than switching using conventional spin-transfer torque. This presentation reports the SOT-assisted switching in heavy metal/magnetic insulator systems.1 The experiments made use of Pt/BaFe12O19 bi-layered structures. Thanks to its strong spin-orbit coupling, Pt has been widely used to produce pure spin currents in previous studies. BaFe12O19 is an M-type barium hexagonal ferrite and is often referred as BaM. It is one of the few magnetic insulators with strong magneto-crystalline anisotropy and shows an effective uniaxial anisotropy field of about 17 kOe. It's found that the switching response in the BaM film strongly depends on the charge current applied to the Pt film. When a constant magnetic field is applied in the film plane, the charge current in the Pt film can switch the normal component of the magnetization (M⊥) in the BaM film between the up and down states. The current also dictates the up and down states of the remnant magnetization when the in-plane field is reduced to zero. When M⊥ is measured by sweeping an in-plane field, the response manifests itself as a hysteresis loop, which evolves in a completely opposite manner if the sign of the charge current is flipped. When the coercivity is measured by sweeping an out-of-plane field, its value can be reduced or increased by as much as about 500 Oe if an appropriate charge current is applied. 1. P. Li, T. Liu, H. Chang, A. Kalitsov, W. Zhang, G. Csaba, W. Li, D. Richardson, A. Demann, G. Rimal, H. Dey, J. S. Jiang, W. Porod, S. Field, J. Tang, M. C. Marconi, A. Hoffmann, O. Mryasov, and M. Wu, Nature Commun. 7:12688 doi: 10.1038/ncomms12688 (2016).

Anisotropy, magnetostriction and local chemical order in amorphous TbxFe1-x (0.1films

International Nuclear Information System (INIS)

Hernando, A.; Prados, C.; Prieto, C.

1996-01-01

Local chemical order in amorphous TbFe thin films has been investigated in a variety of compositions, using EXAFS, magnetostriction and anisotropy measurements. Data reported here are consistent with a density of Fe-Tb pairs in the film plane larger than in the perpendicular direction. (orig.)

Development of a tensile-stress-induced anisotropy in amorphous magnetic thin films

International Nuclear Information System (INIS)

Mandal, K.; Vazquez, M.; Garcia, D.; Castano, F.J.; Prados, C.; Hernando, A.

2000-01-01

Magnetic anisotropy was induced in positive magnetostrictive Fe 80 B 20 and negative magnetostrictive Co 75 Si 15 B 10 thin films by developing a tensile stress within the samples. The films were grown on the concave surfaces of mechanically bowed glass substrates. On releasing the substrates from the substrate holders, a tensile stress was developed within the samples that modified the domain structure. As a result of it, a magnetic easy axis parallel to the direction of the stress was induced in FeB sample whereas in CoSiB sample the induced easy axis was perpendicular to the direction of the developed stress. To produce magnetic multilayers with crossed anisotropy, FeB/CoSiB bilayers and FeB/Cu/CoSiB trilayers were grown on bowed substrates. The study of magnetic properties of the multilayers indicates the development of crossed anisotropy within them, particularly when the magnetic layers are separated by a nonmagnetic Cu layer

Interplay between magnetocrystalline anisotropy and exchange bias in epitaxial CoO/Co films

International Nuclear Information System (INIS)

Liu, Hao-Liang; Zeng, Yu-Jia; Van Haesendonck, Chris; Brems, Steven; Temst, Kristiaan; Vantomme, André

2016-01-01

The interplay between magnetocrystalline anisotropy and exchange bias is investigated in CoO/Co bilayer films, which are grown epitaxially on MgO (0 0 1), by magnetization reversal measurements based on the anisotropic magnetoresistance (AMR) effect. While an asymmetric magnetization reversal survives after training for cooling field (CF) along the hard axis, the magnetization reversal becomes symmetric and is dominated in both branches of the hysteresis loop by domain wall motion before and after training for CF along the easy axis. When performing an in-plane hysteresis loop perpendicular to the CF, the hysteresis loop along the easy axis becomes asymmetric: magnetization rotation dominates in the ascending branch, while there is a larger contribution of domain wall motion in the descending branch. Furthermore, the azimuthal angular dependence of the AMR shows two minima after performing a perpendicular hysteresis loop, instead of only one minimum after training. Relying on the extended Fulcomer and Charap model, these effects can be related to an increased deviation of the average uncompensated antiferromagnetic magnetization from the CF direction. This model provides a consistent interpretation of training and asymmetry of the magnetization reversal for epitaxial films with pronounced magnetocrystalline anisotropy as well as for the previously investigated polycrystalline films. (paper)

Manipulation of perpendicular magnetic anisotropy of single Fe atom adsorbed graphene via MgO(1 1 1) substrate

Science.gov (United States)

Fu, Mingming; Tang, Weiqing; Wu, Yaping; Ke, Congming; Guo, Fei; Zhang, Chunmiao; Yang, Weihuang; Wu, Zhiming; Kang, Junyong

2018-05-01

Perpendicular magnetic anisotropy is significantly important for realizing a long-term retention of information for spintronics devices. Inspired by 2D graphene with its high charge carrier mobility and long spin diffusion length, we report a first-principles design framework on perpendicular magnetic anisotropy engineering of a Fe atom adsorbed graphene by employing a O-terminated MgO (1 1 1) substrate. Determined by the adsorption sites of the Fe atom, a tunable magnetic anisotropy is realized in Fe/graphene/MgO (1 1 1) structure, with the magnetic anisotropy energy of  ‑0.48 meV and 0.23 meV, respectively, corresponding to the in-plane and out of plane easy magnetizations. Total density of states suggest a half-metallicity with a 100% spin polarization in the system. Decomposed densities of Fe-3d states reveal the orbital contributions to the magnetic anisotropy for different Fe adsorption sites. Bonding interaction and charge redistribution regulated by MgO substrate are found responsible for the novel perpendicular magnetic anisotropy engineering in the system. The effective manipulation of perpendicular magnetic anisotropy in present work offers some references for the design and construction of 2D spintronics devices.

Anisotropy of domain wall resistance

Science.gov (United States)

Viret; Samson; Warin; Marty; Ott; Sondergard; Klein; Fermon

2000-10-30

The resistive effect of domain walls in FePd films with perpendicular anisotropy was studied experimentally as a function of field and temperature. The films were grown directly on MgO substrates, which induces an unusual virgin magnetic configuration composed of 60 nm wide parallel stripe domains. This allowed us to carry out the first measurements of the anisotropy of domain wall resistivity in the two configurations of current perpendicular and parallel to the walls. At 18 K, we find 8.2% and 1.3% for the domain wall magnetoresistance normalized to the wall width (8 nm) in these two respective configurations. These values are consistent with the predictions of Levy and Zhang.

Perpendicular magnetic anisotropy of amorphous ferromagnetic CoSiB/[Pt,Au] multilayer

International Nuclear Information System (INIS)

Jeong, S.; Yim, H. I.

2012-01-01

Perpendicular magnetic anisotropy is being widely studied as a possible candidate for a high density spin-transfer torque magnetic random access memory. The key issues of a high-density spin-transfer torque magnetic random access memory are decreasing the switching current and the high thermal stability. In order to solve these problems, two approaches are suggested: One is the development a new amorphous ferromagnetic material as a pinned layer for a multilayer with a low saturated magnetization (M s ) value because of the interface roughness between the two layers. The other is a search for the most suitable materials with high perpendicular magnetic anisotropy in order to have high thermal stability. In this work, we present an amorphous ferromagnetic Co 75 Si 15 B 10 material and compare the magnetic properties of a [CoSiB (0.3, 0.4, 0.5 nm)/Pt (1.4 nm)] 5 multilayer and new combinations [CoSiB (0.3, 0.4, 0.5 nm)/Au (1.5 nm)] 5 .

Tunable magnetic properties by interfacial manipulation of L1(0)-FePt perpendicular ultrathin film with island-like structures.

Science.gov (United States)

Feng, C; Wang, S G; Yang, M Y; Zhang, E; Zhan, Q; Jiang, Y; Li, B H; Yu, G H

2012-02-01

Based on interfacial manipulation of the MgO single crystal substrate and non-magnetic AIN compound, a L1(0)-FePt perpendicular ultrathin film with the structure of MgO/FePt-AIN/Ta was designed, prepared, and investigated. The film is comprised of L1(0)-FePt "magnetic islands," which exhibits a perpendicular magnetic anisotropy (PMA), tunable coercivity (Hc), and interparticle exchange coupling (IEC). The MgO substrate promotes PMA of the film because of interfacial control of the FePt lattice orientation. The AIN compound is doped to increase the difference of surface energy between FePt layer and MgO substrate and to suppress the growth of FePt grains, which takes control of island growth mode of FePt atoms. The AIN compound also acts as isolator of L1(0)-FePt islands to pin the sites of FePt domains, resulting in the tunability of Hc and IEC of the films.

Microscopic and macroscopic inhomogeneity of magnetization and anistropy in amorphous rare earth/transition metal films

International Nuclear Information System (INIS)

Hafner, D.; Hoffmann, H.

1979-01-01

Amorphous Gd/Co and Gd/Co/Mo-films are investigated by measuring the field dependence of the susceptibility. This allows a determination of the value and sign of the perpendicular uniaxial anisotropy as well as the value of the effective ripple stray field. The measurements are made at spots of 50 to 100 μm diameter, allowing one to scan the film surface. Measurements from a spot on the film surface and at the opposing spot on the film-glass substrate interface are performed simultaneously. In this way the anisotropy at two related points on both surfaces of the film can be compared. In general the results show the existence of a ripple stray field which can be accounted for by inhomogeneities in the amorphous films. The perpendicular anisotropy at the free film surface is always lower than the perpendicular anisotropy at the film-substrate interface. In some cases the magnetization at the film surface is in-plane, while at the substrate the magnetization is out-of-plane. The reduction of the perpendicular anisotropy is an ageing effect due to oxidation. (author)

Tunnel Junction with Perpendicular Magnetic Anisotropy: Status and Challenges

Directory of Open Access Journals (Sweden)

Mengxing Wang

2015-08-01

Full Text Available Magnetic tunnel junction (MTJ, which arises from emerging spintronics, has the potential to become the basic component of novel memory, logic circuits, and other applications. Particularly since the first demonstration of current induced magnetization switching in MTJ, spin transfer torque magnetic random access memory (STT-MRAM has sparked a huge interest thanks to its non-volatility, fast access speed, and infinite endurance. However, along with the advanced nodes scaling, MTJ with in-plane magnetic anisotropy suffers from modest thermal stability, high power consumption, and manufactural challenges. To address these concerns, focus of research has converted to the preferable perpendicular magnetic anisotropy (PMA based MTJ, whereas a number of conditions still have to be met before its practical application. This paper overviews the principles of PMA and STT, where relevant issues are preliminarily discussed. Centering on the interfacial PMA in CoFeB/MgO system, we present the fundamentals and latest progress in the engineering, material, and structural points of view. The last part illustrates potential investigations and applications with regard to MTJ with interfacial PMA.

Failure Analysis in Magnetic Tunnel Junction Nanopillar with Interfacial Perpendicular Magnetic Anisotropy

Directory of Open Access Journals (Sweden)

Weisheng Zhao

2016-01-01

Full Text Available Magnetic tunnel junction nanopillar with interfacial perpendicular magnetic anisotropy (PMA-MTJ becomes a promising candidate to build up spin transfer torque magnetic random access memory (STT-MRAM for the next generation of non-volatile memory as it features low spin transfer switching current, fast speed, high scalability, and easy integration into conventional complementary metal oxide semiconductor (CMOS circuits. However, this device suffers from a number of failure issues, such as large process variation and tunneling barrier breakdown. The large process variation is an intrinsic issue for PMA-MTJ as it is based on the interfacial effects between ultra-thin films with few layers of atoms; the tunneling barrier breakdown is due to the requirement of an ultra-thin tunneling barrier (e.g., <1 nm to reduce the resistance area for the spin transfer torque switching in the nanopillar. These failure issues limit the research and development of STT-MRAM to widely achieve commercial products. In this paper, we give a full analysis of failure mechanisms for PMA-MTJ and present some eventual solutions from device fabrication to system level integration to optimize the failure issues.

Magnetocrystalline anisotropy in a (110) (Tb0.27Dy0.73)Fe2 thin-film

International Nuclear Information System (INIS)

Fuente, C de la; Arnaudas, J I; Benito, L; Ciria, M; Moral, A del; Dufour, C; Dumesnil, K

2004-01-01

Magnetic anisotropy measurements performed in a (110) (Tb 0.27 Dy 0.73 )Fe 2 (Terfenol-D) film epitaxially grown on a sapphire substrate are presented. The magnetic torque curves have been determined by using a vectorial vibrating sample magnetometer, which allows us to measure the angular dependence of magnetization components parallel, M parallel , and perpendicular, M perp , to the applied field up to 2 T. The fourfold symmetry associated with the cubic structure within the (110) plane is clearly observed. The analysis of the experimental torque has been carried out considering magnetocrystalline anisotropy up to sixth order and magnetoelastic energy up to second order; so, the magnetocrystalline anisotropy constants in the (110) plane of the film, K 1 and K 2 , have been obtained. This allows us to determine the direction of the magnetization easy axis for (110) Terfenol-D thin-film: it is [1bar12] at RT, passes through [3bar34] at 140 K and then changes to [1bar20] at 40 K. It was completely impossible to explain the angular dependence of the experimental magnetic torque without including shear and tetragonal magnetoelastic stress parameters, b 2 and b 1 , respectively. This confirms the paramount role of the strain in the determination of the magnetic properties in this kind of Terfenol-D thin film

Tuning the Magnetic Anisotropy at a Molecule-Metal Interface

DEFF Research Database (Denmark)

Bairagi, K.; Bellec, A.; Repain, V.

2015-01-01

We demonstrate that a C60 overlayer enhances the perpendicular magnetic anisotropy of a Co thin film, inducing an inverse spin reorientation transition from in plane to out of plane. The driving force is the C60/Co interfacial magnetic anisotropy that we have measured quantitatively in situ...

In-plane current-driven spin-orbit torque switching in perpendicularly magnetized films with enhanced thermal tolerance

International Nuclear Information System (INIS)

Wu, Di; Yu, Guoqiang; Shao, Qiming; Li, Xiang; Wong, Kin L.; Wang, Kang L.; Wu, Hao; Han, Xiufeng; Zhang, Zongzhi; Khalili Amiri, Pedram

2016-01-01

We study spin-orbit-torque (SOT)-driven magnetization switching in perpendicularly magnetized Ta/Mo/Co_4_0Fe_4_0B_2_0 (CoFeB)/MgO films. The thermal tolerance of the perpendicular magnetic anisotropy (PMA) is enhanced, and the films sustain the PMA at annealing temperatures of up to 430 °C, due to the ultra-thin Mo layer inserted between the Ta and CoFeB layers. More importantly, the Mo insertion layer also allows for the transmission of the spin current generated in the Ta layer due to spin Hall effect, which generates a damping-like SOT and is able to switch the perpendicular magnetization. When the Ta layer is replaced by a Pt layer, i.e., in a Pt/Mo/CoFeB/MgO multilayer, the direction of the SOT-induced damping-like effective field becomes opposite because of the opposite sign of spin Hall angle in Pt, which indicates that the SOT-driven switching is dominated by the spin current generated in the Ta or Pt layer rather than the Mo layer. Quantitative characterization through harmonic measurements reveals that the large SOT effective field is preserved for high annealing temperatures. This work provides a route to applying SOT in devices requiring high temperature processing steps during the back-end-of-line processes.

Magnetic anisotropy and chemical long-range order in epitaxial ferrimagnetic CrPt sub 3 films

CERN Document Server

Maret, M; Köhler, J; Poinsot, R; Ulhaq-Bouillet, C; Tonnerre, J M; Berar, J F; Bucher, E

2000-01-01

Thin films of CrPt sub 3 were prepared by molecular beam epitaxy on both Al sub 2 O sub 3 (0 0 0 1) and MgO(0 0 1) substrates, either directly by co-deposition of Cr and Pt at high temperatures or after in situ annealing of superlattices [Cr(2 A)/Pt(7 A)]. In situ RHEED observations and X-ray diffraction measurements have allowed us to check the single-crystal quality of CrPt sub 3 films and to determine the degree of L1 sub 2 -type long-range order (LRO). In films co-deposited between 850 deg. C and 950 deg. C a nearly perfect LRO has been observed. As in bulk alloys, such ordering yields a ferrimagnetic order, while the disordered films are non-magnetic. In contrast with the ferromagnetic L1 sub 2 -type ordered CoPt sub 3 (1 1 1) films, the ferrimagnetic CrPt sub 3 (1 1 1) films exhibit perpendicular magnetic anisotropy with quality factors, K sub u /K sub d , as large as 5 and large coercivities around 450 kA/m. Such anisotropy could be related to the arrangement of Cr atoms, which owing to their large mag...

Large Friction Anisotropy of a Polydiacetylene Monolayer

International Nuclear Information System (INIS)

Burns, A.R.; Carpick, R.W.; Sasaki, D.Y.

1999-01-01

Friction force microscopy measurements of a polydiacetylene monolayer film reveal a 300% friction anisotropy that is correlated with the film structure. The film consists of a monolayer of the red form of N-(2-ethanol)- 10,12 pentacosadiynamide, prepared on a Langmuir trough and deposited on a mica substrate. As confirmed by atomic force microscopy and fluorescence microscopy, the monolayer consists of domains of linearly oriented conjugated backbones with pendant hydrocarbon side chains above and below the backbones. Maximum friction occurs when the sliding direction is perpendicular to the backbone. We propose that the backbones impose anisotropic packing of the hydrocarbon side chains which leads to the observed friction anisotropy. Friction anisotropy is therefore a sensitive, optically-independent indicator of polymer backbone direction and monolayer structural properties

Double-layered perpendicular magnetic recording media of granular-type FePt-MgO films

International Nuclear Information System (INIS)

Zhang Zhengang; Singh, Amarendra K.; Yin Jinhua; Perumal, A.; Suzuki, Takao

2005-01-01

The recording performance of double-layered granular-type FePt-MgO perpendicular magnetic recording media fabricated onto glass discs by sputtering is investigated. The (0 0 1)-textured FePt granular films are obtained by annealing FePt/MgO multilayers. Three different multilayer structures are compared in their magnetic properties and recording SNR performances. To evaluate thermal stability property of these granular-type FePt disks, the time-dependent magnetic force microscope (MFM) signal from the written bits on one of these disks is recorded in the temperature range 25-200 degree sign C. The signal decay at high observation temperature is interpreted based on the temperature dependence of magnetic anisotropy (K u )

Current induced multi-mode propagating spin waves in a spin transfer torque nano-contact with strong perpendicular magnetic anisotropy

Science.gov (United States)

Mohseni, S. Morteza; Yazdi, H. F.; Hamdi, M.; Brächer, T.; Mohseni, S. Majid

2018-03-01

Current induced spin wave excitations in spin transfer torque nano-contacts are known as a promising way to generate exchange-dominated spin waves at the nano-scale. It has been shown that when these systems are magnetized in the film plane, broken spatial symmetry of the field around the nano-contact induced by the Oersted field opens the possibility for spin wave mode co-existence including a non-linear self-localized spin-wave bullet and a propagating mode. By means of micromagnetic simulations, here we show that in systems with strong perpendicular magnetic anisotropy (PMA) in the free layer, two propagating spin wave modes with different frequency and spatial distribution can be excited simultaneously. Our results indicate that in-plane magnetized spin transfer nano-contacts in PMA materials do not host a solitonic self-localized spin-wave bullet, which is different from previous studies for systems with in plane magnetic anisotropy. This feature renders them interesting for nano-scale magnonic waveguides and crystals since magnon transport can be configured by tuning the applied current.

Perpendicular magnetic anisotropy influence on voltage-driven spin-diode effect in magnetic tunnel junctions: A micromagnetic study

Energy Technology Data Exchange (ETDEWEB)

Frankowski, Marek, E-mail: mfrankow@agh.edu.pl [AGH University of Science and Technology, al. Mickiewicza 30, Department of Electronics, 30-059 Kraków (Poland); Chȩciński, Jakub [AGH University of Science and Technology, al. Mickiewicza 30, Department of Electronics, 30-059 Kraków (Poland); AGH University of Science and Technology, al. Mickiewicza 30, Faculty of Physics and Applied Computer Science, 30-059 Kraków (Poland); Skowroński, Witold; Stobiecki, Tomasz [AGH University of Science and Technology, al. Mickiewicza 30, Department of Electronics, 30-059 Kraków (Poland)

2017-05-01

We study the influence of the perpendicular magnetic anisotropy on the voltage-induced ferromagnetic resonance in magnetic tunnel junctions (MTJs). An MTJ response to the applied radio-frequency voltage excitation is investigated using micromagnetic calculations with the free layer oriented both in-plane and out-of-plane. Our model allows for a quantitative description of the magnetic system parameters such as resonance frequency, sensitivity or quality factor and for a distinction between material-dependent internal damping and disorder-dependent effective damping. We find that the sensitivity abruptly increases up to three orders of magnitude near the anisotropy transition regime, while the quality factor declines due to effective damping increase. We attribute the origin of this behaviour to the changes of the exchange energy in the system, which is calculated using micromagnetic approach. - Highlights: • Micromagnetic approach is used for modelling of voltage-induced spin-diode effect. • Voltage-induced switching simulations are performed. • Spin-diode line is analyzed as a function of perpendicular anisotropy energy. • Effective damping, quality factor and sensitivity are calculated.

Capping layer-tailored interface magnetic anisotropy in ultrathin Co2FeAl films

International Nuclear Information System (INIS)

Belmeguenai, M.; Zighem, F.; Chérif, S. M.; Gabor, M. S.; Petrisor, T.; Tiusan, C.

2015-01-01

Co 2 FeAl (CFA) thin films of various thicknesses (2 nm ≤ d ≤ 50 nm) have been grown on (001) MgO single crystal substrates and then capped with Cr, V, and Ta. Their magnetic and structural properties have been studied by x-ray diffraction (XRD), vibrating sample magnetometry, and broadband microstrip ferromagnetic resonance (MS-FMR). The XRD revealed that the films are epitaxial with the cubic [001] CFA axis normal to the substrate plane and that the chemical order varies from the B2 phase to the A2 phase when decreasing the thickness. The deduced lattice parameters showed that the Cr-capped films exhibit a larger tetragonal distortion, as compared with the films capped with V or Ta. The presence of magnetic dead layers has been observed in CFA samples capped with V and Ta but not in the case of the Cr-capped ones. The effective magnetization, deduced from the fit of MS-FMR measurements, increases (decreases) linearly with the CFA inverse thickness (1/d) for the Cr-capped (Ta-capped) films while it is constant for the V-capped ones. This allows quantifying the perpendicular surface anisotropy coefficients of −0.46 erg/cm 2 and 0.74 erg/cm 2 for Cr and Ta-capped films, respectively. Moreover, the fourfold and the uniaxial anisotropy fields, measured in these films, showed different trends with a respect to the CFA inverse thickness. This allows inferring that a non-negligible part of the fourfold magnetocrystalline term is of interfacial origin

Mn doping effect on structure and magnetism of epitaxial (FePt)1-xMnx films

International Nuclear Information System (INIS)

Huang, J.C.A.; Chang, Y.C.; Yu, C.C.; Yao, Y.D.; Hu, Y.M.; Fu, C.M.

2003-01-01

We study the structure and perpendicular magnetism of molecular beam epitaxy grown (FePt) 1-x Mn x films with doping concentration x=0, 1%, 2%, 3%, 4%, and 5%. The (FePt) 1-x Mn x films were made by multilayers growth of [Fe/Pt/Mn]xN at 100 deg. C and annealed at 600 deg. C. X-ray diffraction scans indicate that relatively better L1 0 ordered structure for low Mn doping (x 3%. The perpendicular magnetic anisotropy effect of the (FePt) 1-x Mn x films tends to decrease with the increase of Mn doping for x>1%. However, the x=1% doped films possess slightly better perpendicular magnetic anisotropy effect than the zero doped film. The perpendicular magnetic anisotropy constant are of about 1.3x10 7 and 1.6x10 7 erg/cm 3 for x=0% and x=1%, respectively

Capping layer-tailored interface magnetic anisotropy in ultrathin Co{sub 2}FeAl films

Energy Technology Data Exchange (ETDEWEB)

Belmeguenai, M., E-mail: belmeguenai.mohamed@univ-paris13.fr; Zighem, F.; Chérif, S. M. [LSPM (CNRS-UPR 3407), Université Paris 13, Sorbonne Paris Cité, 99 Avenue Jean-Baptiste Clément, 93430 Villetaneuse (France); Gabor, M. S., E-mail: mihai.gabor@phys.utcluj.ro; Petrisor, T. [Center for Superconductivity, Spintronics and Surface Science, Department of Physics and Chemistry, Technical University of Cluj-Napoca, Str. Memorandumului No. 28, RO-400114 Cluj-Napoca (Romania); Tiusan, C. [Center for Superconductivity, Spintronics and Surface Science, Department of Physics and Chemistry, Technical University of Cluj-Napoca, Str. Memorandumului No. 28, RO-400114 Cluj-Napoca (Romania); Institut Jean Lamour, CNRS, Lorraine Université, BP 70239, F-54506 Vandoeuvre (France)

2015-01-14

Co{sub 2}FeAl (CFA) thin films of various thicknesses (2 nm ≤ d ≤ 50 nm) have been grown on (001) MgO single crystal substrates and then capped with Cr, V, and Ta. Their magnetic and structural properties have been studied by x-ray diffraction (XRD), vibrating sample magnetometry, and broadband microstrip ferromagnetic resonance (MS-FMR). The XRD revealed that the films are epitaxial with the cubic [001] CFA axis normal to the substrate plane and that the chemical order varies from the B2 phase to the A2 phase when decreasing the thickness. The deduced lattice parameters showed that the Cr-capped films exhibit a larger tetragonal distortion, as compared with the films capped with V or Ta. The presence of magnetic dead layers has been observed in CFA samples capped with V and Ta but not in the case of the Cr-capped ones. The effective magnetization, deduced from the fit of MS-FMR measurements, increases (decreases) linearly with the CFA inverse thickness (1/d) for the Cr-capped (Ta-capped) films while it is constant for the V-capped ones. This allows quantifying the perpendicular surface anisotropy coefficients of −0.46 erg/cm{sup 2} and 0.74 erg/cm{sup 2} for Cr and Ta-capped films, respectively. Moreover, the fourfold and the uniaxial anisotropy fields, measured in these films, showed different trends with a respect to the CFA inverse thickness. This allows inferring that a non-negligible part of the fourfold magnetocrystalline term is of interfacial origin.

Size dependence of spin-torque induced magnetic switching in CoFeB-based perpendicular magnetization tunnel junctions (invited)

Science.gov (United States)

Sun, J. Z.; Trouilloud, P. L.; Gajek, M. J.; Nowak, J.; Robertazzi, R. P.; Hu, G.; Abraham, D. W.; Gaidis, M. C.; Brown, S. L.; O'Sullivan, E. J.; Gallagher, W. J.; Worledge, D. C.

2012-04-01

CoFeB-based magnetic tunnel junctions with perpendicular magnetic anisotropy are used as a model system for studies of size dependence in spin-torque-induced magnetic switching. For integrated solid-state memory applications, it is important to understand the magnetic and electrical characteristics of these magnetic tunnel junctions as they scale with tunnel junction size. Size-dependent magnetic anisotropy energy, switching voltage, apparent damping, and anisotropy field are systematically compared for devices with different materials and fabrication treatments. Results reveal the presence of sub-volume thermal fluctuation and reversal, with a characteristic length-scale of the order of approximately 40 nm, depending on the strength of the perpendicular magnetic anisotropy and exchange stiffness. To have the best spin-torque switching efficiency and best stability against thermal activation, it is desirable to optimize the perpendicular anisotropy strength with the junction size for intended use. It also is important to ensure strong exchange-stiffness across the magnetic thin film. These combine to give an exchange length that is comparable or larger than the lateral device size for efficient spin-torque switching.

Exchange coupling in hybrid anisotropy magnetic multilayers quantified by vector magnetometry

Energy Technology Data Exchange (ETDEWEB)

Morrison, C., E-mail: C.Morrison.2@warwick.ac.uk; Miles, J. J.; Thomson, T. [School of Computer Science, University of Manchester, Manchester M13 9PL (United Kingdom); Anh Nguyen, T. N. [Materials Physics, School of ICT, KTH Royal Institute of Technology, Electrum 229, 164 40 Kista (Sweden); Spintronics Research Group, Laboratory for Nanotechnology (LNT), VNU-HCM, Ho Chi Minh City (Viet Nam); Fang, Y.; Dumas, R. K. [Department of Physics, University of Gothenburg, 412 96 Gothenburg (Sweden); Åkerman, J. [Materials Physics, School of ICT, KTH Royal Institute of Technology, Electrum 229, 164 40 Kista (Sweden); Department of Physics, University of Gothenburg, 412 96 Gothenburg (Sweden)

2015-05-07

Hybrid anisotropy thin film heterostructures, where layers with perpendicular and in-plane anisotropy are separated by a thin spacer, are novel materials for zero/low field spin torque oscillators and bit patterned media. Here, we report on magnetization reversal and exchange coupling in a archetypal Co/Pd (perpendicular)-NiFe (in-plane) hybrid anisotropy system studied using vector vibrating sample magnetometry. This technique allows us to quantify the magnetization reversal in each individual magnetic layer, and measure of the interlayer exchange as a function of non-magnetic spacer thickness. At large (>1 nm) spacer thicknesses Ruderman-Kittel-Kasuya-Yosida-like exchange dominates, with orange-peel coupling providing a significant contribution only for sub-nm spacer thickness.

Spin torque switching of 20 nm magnetic tunnel junctions with perpendicular anisotropy

Science.gov (United States)

Gajek, M.; Nowak, J. J.; Sun, J. Z.; Trouilloud, P. L.; O'Sullivan, E. J.; Abraham, D. W.; Gaidis, M. C.; Hu, G.; Brown, S.; Zhu, Y.; Robertazzi, R. P.; Gallagher, W. J.; Worledge, D. C.

2012-03-01

Spin-transfer torque magnetic random access memory (STT-MRAM) is one of the most promising emerging non-volatile memory technologies. MRAM has so far been demonstrated with a unique combination of density, speed, and non-volatility in a single chip, however, without the capability to replace any single mainstream memory. In this paper, we demonstrate the basic physics of spin torque switching in 20 nm diameter magnetic tunnel junctions with perpendicular magnetic anisotropy materials. This deep scaling capability clearly indicates the STT MRAM device itself may be suitable for integration at much higher densities than previously proven.

Magnetic and structural properties of L1{sub 1} type CoPt-C ordered alloy perpendicular films as a function of C content

Energy Technology Data Exchange (ETDEWEB)

Shimatsu, T; Kataoka, H; Aoi, H [Research Institute of Electrical Communication, Tohoku University, Sendai, 980-8577 (Japan); Sato, H; Okamoto, S; Kitakami, O, E-mail: shimatsu@riec.tohoku.ac.j [Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, Sendai, 980-8577 (Japan)

2010-01-01

Magnetic and structural properties of L1{sub 1} type (Co{sub 0.5}Pt{sub 0.5}){sub 100-X}-C{sub X} ordered alloy perpendicular films, fabricated on 2.5 inch size glass disks by sputter deposition, were examined as a function of C content, X. L1{sub 1} type Co{sub 0.5}Pt{sub 0.5}-C polycrystalline films (10 nm thickness), with <111> axis (the easy axis) perpendicular to the film plane, were successfully fabricated even for a 30 vol% C content. Structural analysis indicated the segregation of C to the grain boundaries. Uniaxial magnetic anisotropy, K{sub u}, of Co{sub 0.5}Pt{sub 0.5} films without C addition was relatively low, about 1.5x10{sup 7} erg/cm{sup 3} under the present deposition conditions. However, the addition of 5 vol.% C to Co-Pt films enhanced the ordering, resulting in an increase in K{sub u} to around 2.5 x10{sup 7} erg/cm{sup 3}. A further increase in C content reduced K{sub u}; however, K{sub u} maintained a relatively large value of about 1.8x10{sup 7} erg/cm{sup 3} even for a 20vol% C content, without degrading the easy axis orientation perpendicular to the film plane. Experimental results demonstrated the potential of the L1{sub 1} type Co{sub 0.5}Pt{sub 0.5}-C films for use in granular media applications, due to their very high K{sub u}, the relatively low fabrication temperature, and good controllability of the grain orientation.

Magnetic anisotropy of MnAs-films on GaAs(0 0 1) studied with ferromagnetic resonance

International Nuclear Information System (INIS)

Lindner, J.; Tolinski, T.; Lenz, K.; Kosubek, E.; Wende, H.; Baberschke, K.; Ney, A.; Hesjedal, T.; Pampuch, C.; Koch, R.; Daeweritz, L.; Ploog, K.H.

2004-01-01

Thin films of MnAs grown on GaAs(0 0 1) show a self-organized structure of coexisting ferromagnetic α- and paramagnetic β-MnAs stripes in the temperature interval from 10 to 40 deg. C. We quantify the magnetic anisotropies of the α-stripes via ferromagnetic resonance and superconducting quantum interference device magnetometry for samples with thicknesses of 57 and 165 nm. The easy axis of magnetization is found to be located perpendicular to the stripe direction, whereas the direction parallel to the stripes is a hard one. While the intrinsic anisotropies show a bulk-like behavior and explain the direction of the hard axis, the key to understanding the direction of the easy axis is given by the demagnetizing fields due to the stripe formation

Enhancement of L10 ordering with the c-axis perpendicular to the substrate in FePt alloy film by using an epitaxial cap-layer

Directory of Open Access Journals (Sweden)

Mitsuru Ohtake

2017-05-01

Full Text Available FePt alloy thin films with cap-layers of MgO or C are prepared on MgO(001 single-crystal substrates by using a two-step method consisting of low-temperature deposition at 200 °C followed by high-temperature annealing at 600 °C. The FePt film thickness is fixed at 10 nm, whereas the cap-layer thickness is varied from 1 to 10 nm. The influences of cap-layer material and cap-layer thickness on the variant structure and the L10 ordering are investigated. Single-crystal FePt(001 films with disordered fcc structure (A1 grow epitaxially on the substrates at 200 °C. Single-crystal MgO(001 cap-layers grow epitaxially on the FePt films, whereas the structure of C cap-layers is amorphous. The phase transformation from A1 to L10 occurs when the films are annealed at 600 °C. The FePt films with MgO cap-layers thicker than 2 nm consist of L10(001 variant with the c-axis perpendicular to the substrate surface, whereas those with C cap-layers involve small volumes of L10(100 and (010 variants with the c-axis lying in the film plane. The in-plane and the out-of-plane lattices are respectively more expanded and contracted in the continuous-lattice MgO/FePt/MgO structure due to accommodations of misfits of FePt film with respect to not only the MgO substrate but also the MgO cap-layer. The lattice deformation promotes phase transformation along the perpendicular direction and L10 ordering. The FePt films consisting of only L10(001 variant show strong perpendicular magnetic anisotropies and low in-plane coercivities. The present study shows that an introduction of epitaxial cap-layer is effective in controlling the c-axis perpendicular to the substrate surface.

Enhancement in the interfacial perpendicular magnetic anisotropy and the voltage-controlled magnetic anisotropy by heavy metal doping at the Fe/MgO interface

Directory of Open Access Journals (Sweden)

Takayuki Nozaki

2018-02-01

Full Text Available We investigated the influence of heavy metal doping at the Fe/MgO interface on the interfacial perpendicular magnetic anisotropy (PMA and the voltage-controlled magnetic anisotropy (VCMA in magnetic tunnel junctions prepared by sputtering-based deposition. The interfacial PMA was increased by tungsten doping and a maximum intrinsic interfacial PMA energy, Ki,0 of 2.0 mJ/m2 was obtained. Ir doping led to a large increase in the VCMA coefficient by a factor of 4.7 compared with that for the standard Fe/MgO interface. The developed technique provides an effective approach to enhancing the interfacial PMA and VCMA properties in the development of voltage-controlled spintronic devices.

Perpendicular magnetic anisotropy at the interface between ultrathin Fe film and MgO studied by angular-dependent x-ray magnetic circular dichroism

Energy Technology Data Exchange (ETDEWEB)

Okabayashi, J. [Research Center for Spectrochemistry, The University of Tokyo, Bunkyo-ku, Tokyo 113-0033 (Japan); Koo, J. W.; Mitani, S. [National Institute for Materials Science (NIMS), Tsukuba 305-0047 (Japan); Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba 305-8577 (Japan); Sukegawa, H. [National Institute for Materials Science (NIMS), Tsukuba 305-0047 (Japan); Takagi, Y.; Yokoyama, T. [Institute of Molecular Science, Okazaki, Aichi 444-8585 (Japan)

2014-09-22

Interface perpendicular magnetic anisotropy (PMA) in ultrathin Fe/MgO (001) has been investigated using angular-dependent x-ray magnetic circular dichroism (XMCD). We found that anisotropic orbital magnetic moments deduced from the analysis of XMCD contribute to the large PMA energies, whose values depend on the annealing temperature. The large PMA energies determined from magnetization measurements are related to those estimated from the XMCD and the anisotropic orbital magnetic moments through the spin-orbit interaction. The enhancement of anisotropic orbital magnetic moments can be explained mainly by the hybridization between the Fe 3d{sub z}{sup 2} and O 2p{sub z} states.

Temperature dependence of the interfacial magnetic anisotropy in W/CoFeB/MgO

Directory of Open Access Journals (Sweden)

Kyoung-Min Lee

2017-06-01

Full Text Available The interfacial perpendicular magnetic anisotropy in W/CoFeB (1.2 ∼ 3 nm/MgO thin film structures is strongly dependent on temperature, and is significantly reduced at high temperature. The interfacial magnetic anisotropy is generally proportional to the third power of magnetization, but an additional factor due to thermal expansion is required to explain the temperature dependence of the magnetic anisotropy of ultrathin CoFeB films. The reduction of the magnetic anisotropy is more prominent for the thinner films; as the temperature increases from 300 K to 400 K, the anisotropy is reduced ∼50% for the 1.2-nm-thick CoFeB, whereas the anisotropy is reduced ∼30% for the 1.7-nm-thick CoFeB. Such a substantial reduction of magnetic anisotropy at high temperature is problematic for data retention when incorporating W/CoFeB/MgO thin film structures into magneto-resistive random access memory devices. Alternative magnetic materials and structures are required to maintain large magnetic anisotropy at elevated temperatures.

Study of obliquely deposited thin cobalt films

International Nuclear Information System (INIS)

Szmaja, W.; Kozlowski, W.; Balcerski, J.; Kowalczyk, P.J.; Grobelny, J.; Cichomski, M.

2010-01-01

Research highlights: → The paper reports simultaneously on the magnetic domain structure of obliquely deposited thin cobalt films (40 nm and 100 nm thick) and their morphological structure. Such studies are in fact rare (Refs. cited in the paper). → Moreover, to our knowledge, observations of the morphological structure of these films have not yet been carried out simultaneously by transmission electron microscopy (TEM) and atomic force microscopy (AFM). → The films of both thicknesses were found to have uniaxial in-plane magnetic anisotropy. → The magnetic microstructure of the films 40 nm thick was composed of domains running and magnetized predominantly in the direction perpendicular to the incidence plane of the vapor beam. → As the film thickness was changed from 40 nm to 100 nm, the magnetic anisotropy was observed to change from the direction perpendicular to parallel with respect to the incidence plane. → Thanks to the application of TEM and AFM, complementary information on the morphological structure of the films could be obtained. → In comparison with TEM images, AFM images revealed grains larger in size and slightly elongated in the direction perpendicular rather than parallel to the incidence plane. → These experimental findings clearly show that surface diffusion plays an important role in the process of film growth. → For the films 40 nm thick, the alignment of columnar grains in the direction perpendicular to the incidence plane was observed. → This correlates well with the magnetic domain structure of these films. → For the films 100 nm thick, the perpendicular alignment of columnar grains could also be found, although in fact with larger difficulty. → TEM studies showed that the films consisted mainly of the hexagonal close-packed (HCP) crystalline structure, but no preferred crystallographic orientation of the grains could be detected for the films of both thicknesses. → For the films 100 nm thick, the alignment of

Spectroscopic ellipsometry investigations of optical anisotropy in obliquely deposited hafnia thin films

Energy Technology Data Exchange (ETDEWEB)

Tokas, R. B., E-mail: tokasstar@gmail.com; Jena, Shuvendu; Thakur, S.; Sahoo, N. K. [Atomic & Molecular Physics Division, Bhabha Atomic Research Centre, Trombay, Mumbai-85 (India); Haque, S. Maidul; Rao, K. Divakar [Photonics & Nanotechnology Section, Atomic & Molecular Physics Division, Bhabha Atomic Research Centre facility, Visakhapatnam-530012 (India)

2016-05-23

In present work, HfO{sub 2} thin films have been deposited at various oblique incidences on Si substrates by electron beam evaporation. These refractory oxide films exhibited anisotropy in refractive index predictably due to special columnar microstructure. Spectroscopic ellipsometry being a powerful tool for optical characterization has been employed to investigate optical anisotropy. It was observed that the film deposited at glancing angle (80°) exhibits the highest optical anisotropy. Further, anisotropy was noticed to decrease with lower values of deposition angles while effective refractive index depicts opposite trend. Variation in refractive index and anisotropy has been explained in light of atomic shadowing during growth of thin films at oblique angles.

Thermal fluctuations in perpendicular recording media: New methodology for estimation of activation moment

International Nuclear Information System (INIS)

Mamiya, H; Oba, Y; Ohnuma, M; Hagiya, H; Oku, T; Suzuki, J; Yokoyama, M; Nishihara, Y; Katayama, T; Awano, H; Koda, T

2011-01-01

In nanoparticulate films with perpendicular magnetic anisotropy, a large demagnetizing field almost compensates for the experimentally designed change in the magnetic field applied parallel to the film normal. We propose a new method based on field-cycling to eliminate the uncertainty in the demagnetizing response from the analysis of the activation volume of the reversal or magnetic activation moment in such films. In this method, the applied field induced variation in the magnetic relaxation rate is measured before the effect of the demagnetizing field becomes dominant. We also discuss an analogical thermal-cycling method to clarify the temperature dependence of the barrier height for magnetization reversal in a magnetic field. We apply these methods to a Co 74 Pt 16 Cr 10 -SiO 2 nanoparticulate film as an example. The results demonstrate that these methods are useful for studying thermal fluctuations in perpendicular recording media.

Magnetic anisotropies of (Ga,Mn)As films and nanostructures

Energy Technology Data Exchange (ETDEWEB)

Hoffmann, Frank

2011-02-02

In this work the magnetic anisotropies of the diluted magnetic semiconductor (Ga,Mn)As were investigated experimentally. (Ga,Mn)As films show a superposition of various magnetic anisotropies which depend sensitively on various parameters such as temperature, carrier concentration or lattice strain. However, the anisotropies of lithographically prepared (Ga,Mn)As elements differ significantly from an unpatterned (Ga,Mn)As film. In stripe-shaped structures this behaviour is caused by anisotropic relaxation of the compressive lattice strain. In order to determine the magnetic anisotropies of individual (Ga,Mn)As nanostructures a combination of ferromagnetic resonance and time-resolved scanning Kerr microscopy was employed in this thesis. In addition, local changes of the magnetic anisotropy in circular and rectangular structures were visualized by making use of spatially resolved measurements. Finally, also the influence of the laterally inhomogeneous magnetic anisotropies on the static magnetic properties, such as coercive fields, was investigated employing spatially resolved static MOKE measurements on individual (Ga,Mn)As elements. (orig.)

Exchange bias energy in Co/Pt/IrMn multilayers with perpendicular and in-plane anisotropy

International Nuclear Information System (INIS)

Czapkiewicz, M.; Stobiecki, T.; Rak, R.; Zoladz, M.; Dijken, S. van

2007-01-01

The magnetization reversal process in perpendicularly biased [Pt/Co] 3 /d Pt Pt/IrMn and in-plane biased Co/d Pt Pt/IrMn multilayers with 0nm= Pt = Pt =0.1nm. In both cases, the existence of large exchange bias fields correlates with a high domain density during magnetization reversal. The interface exchange coupling energy is larger for the in-plane biased films than for the perpendicularly biased multilayers

ab-Plane Anisotropy of Transport Properties in Unidirectionally Twinned YBa2Cu3O7-δ Films

International Nuclear Information System (INIS)

Villard, C.; Chateignier, D.; Thrane, B.; Koren, G.; Cohen, D.; Polturak, E.

1996-01-01

A unidirectionally twinned, c oriented YBa 2 Cu 3 O 7-δ film was prepared on a (001) NdGaO 3 substrate. In the normal state between 100 and 300K, the unidirectional twin plane lattice induces a strong anisotropy of ρ ab , leading to a temperature independent ratio of 6 between the resisitivities across and along the twin boundaries. At 77K, the self-field critical current parallel to twin planes is 1.2x10 6 A/cm 2 , a value which is 25 times higher than along the perpendicular direction. This shows that, at this temperature, twin boundaries control the critical current values in YBCO films by either channeling or pinning effects. copyright 1996 The American Physical Society

Magneto-optical measurement of anisotropy energy constant(s) for amorphous rare earth, transition metal alloys

International Nuclear Information System (INIS)

Uber, R.E.; Mansuripur, M.

1988-01-01

Optical investigation of magneto-optical films is complementary to conventional torque and VSM magnetometry. In the authors' laboratory, they are now measuring anisotropy energy constants of RE-TM thin films at temperatures from ambient to 150 0 C. An in-plane magnetic field (up to 16.5 KOe) is applied to a saturated sample with perpendicular magnetization. The movement away from the perpendicular direction is monitored using the polar Kerr effect. At the HeNe wavelength, the Kerr effect is principally due to the top 500 angstroms of the transition metal subnetwork in the films

Magnetic droplets in nano-contact spin-torque oscillators with perpendicular magnetic anisotropy

Science.gov (United States)

Åkerman, Johan

2013-03-01

The theoretical prediction, by Ivanov and Kosevich, of ``magnon drop'' solitons in thin films with perpendicular magnetic anisotropy (PMA) and zero damping, dates back to the 1970s. More recently, Hoefer, Silva and Keller, demonstrated analytically and numerically that related ``magnetic droplet'' solitons should be possible to excite in nano-contact spin-torque oscillators (NC-STOs) based on PMA materials, where spin transfer torque locally realizes the zero-damping condition required in. In my talk, I will present the first experimental demonstration of such magnetic droplets, realized using 50-100 nm diameter nano-contacts (NCs) fabricated on top of orthogonal GMR stacks of Co8/Cu/Co0.3[Ni0.8/Co0.4]x4 (thicknesses in nm). The nucleation of a magnetic droplet manifests itself as a dramatic 10 GHz drop in microwave signal frequency at a drive-current dependent critical perpendicular field of the order of 0.5 - 1 T. The drop in frequency is accompanied by a simultaneous sharp resistance increase of the device and a sign change of its magnetoresistance, directly indicating the existence of a reversed magnetization in a region of the [Co/Ni] free layer underneath the NC. As predicted by numerical simulations the droplet exhibits rich magnetodynamic properties, experimentally observed as auto-modulation at approximately 1 GHz and sometimes sidebands at 1/2 and 3/2 of the fundamental droplet frequency. The 1 GHz modulation can be shown numerically to be related to the drift instability of the droplet, albeit with enough restoring force to make the droplet perform a periodic motion instead of leaving the NC region. The sidebands at 1/2 and 3/2 the droplet frequency are related to eigenmodes of the droplet perimeter. Magnetic droplet nucleation is found to be robust and reproducible over a wide number of NC-STOs with different NC sizes, making this new nanomagnetic object as fundamental and potentially useful to nanomagnetism as e.g. domain walls and vortices. Support

Fabrication of field-effect transistor utilizing oriented thin film of octahexyl-substituted phthalocyanine and its electrical anisotropy based on columnar structure

Science.gov (United States)

Ohmori, Masashi; Nakatani, Mitsuhiro; Kajii, Hirotake; Miyamoto, Ayano; Yoneya, Makoto; Fujii, Akihiko; Ozaki, Masanori

2018-03-01

Field-effect transistors with molecularly oriented thin films of metal-free non-peripherally octahexyl-substituted phthalocyanine (C6PcH2), which characteristically form a columnar structure, have been fabricated, and the electrical anisotropy of C6PcH2 has been investigated. The molecularly oriented thin films of C6PcH2 were prepared by the bar-coating technique, and the uniform orientation in a large area and the surface roughness at a molecular level were observed by polarized spectroscopy and atomic force microscopy, respectively. The field effect mobilities parallel and perpendicular to the column axis of C6PcH2 were estimated to be (1.54 ± 0.24) × 10-2 and (2.10 ± 0.23) × 10-3 cm2 V-1 s-1, respectively. The electrical anisotropy based on the columnar structure has been discussed by taking the simulated results obtained by density functional theory calculation into consideration.

Tailoring of in-plane magnetic anisotropy in polycrystalline cobalt thin films by external stress

Energy Technology Data Exchange (ETDEWEB)

Kumar, Dileep, E-mail: dkumar@csr.res.in [UGC-DAE Consortium for Scientic Research, Khandwa Road, Indore 452001 (India); Singh, Sadhana [UGC-DAE Consortium for Scientic Research, Khandwa Road, Indore 452001 (India); Vishawakarma, Pramod [School of Nanotechnology, RGPV, Bhopal 462036 (India); Dev, Arun Singh; Reddy, V.R. [UGC-DAE Consortium for Scientic Research, Khandwa Road, Indore 452001 (India); Gupta, Ajay [Amity Center for Spintronic Materials, Amity University, Sector 125, Noida 201303 (India)

2016-11-15

Polycrystalline Co films of nominal thickness ~180 Å were deposited on intentionally curved Si substrates. Tensile and compressive stresses of 100 MPa and 150 MPa were induced in the films by relieving the curvature. It has been found that, within the elastic limit, presence of stress leads to an in-plane magnetic anisotropy in the film and its strength increases with increasing stress. Easy axis of magnetization in the films is found to be parallel/ transverse to the compressive /tensile stresses respectively. The origin of magnetic anisotropy in the stressed films is understood in terms of magneto- elastic coupling, where the stress try to align the magnetic moments in order to minimize the magneto-elastic as well as anisotropy energy. Tensile stress is also found to be responsible for the surface smoothening of the films, which is attributed to the movement of the atoms associated with the applied stress. The present work provides a possible way to tailor the magnetic anisotropy and its direction in polycrystalline and amorphous films using external stress. - Highlights: • Tensile and compressive stresses were induced in Co films by removing the bending force from the substrates after film deposition. • Controlled external mechanical stress is found to be responsible for magnetic anisotropies in amorphous and polycrystalline thin films, where crystalline anisotropy is absent. • Tensile stress leads to surface smoothening of the polycrystalline Co films.

Electric-field assisted switching of magnetization in perpendicularly magnetized (Ga,Mn)As films at high temperatures

Science.gov (United States)

Wang, Hailong; Ma, Jialin; Yu, Xueze; Yu, Zhifeng; Zhao, Jianhua

2017-01-01

The electric-field effects on the magnetism in perpendicularly magnetized (Ga,Mn)As films at high temperatures have been investigated. An electric-field as high as 0.6 V nm-1 is applied by utilizing a solid-state dielectric Al2O3 film as a gate insulator. The coercive field, saturation magnetization and magnetic anisotropy have been clearly changed by the gate electric-field, which are detected via the anomalous Hall effect. In terms of the Curie temperature, a variation of about 3 K is observed as determined by the temperature derivative of the sheet resistance. In addition, electrical switching of the magnetization assisted by a fixed external magnetic field at 120 K is demonstrated, employing the gate-controlled coercive field. The above experimental results have been attributed to the gate voltage modulation of the hole density in (Ga,Mn)As films, since the ferromagnetism in (Ga,Mn)As is carrier-mediated. The limited modulation magnitude of magnetism is found to result from the strong charge screening effect introduced by the high hole concentration up to 1.10  ×  1021 cm-3, while the variation of the hole density is only about 1.16  ×  1020 cm-3.

Perpendicular magnetic anisotropy in Mo/Co2FeAl0.5Si0.5/MgO/Mo multilayers with optimal Mo buffer layer thickness

Science.gov (United States)

Saravanan, L.; Raja, M. Manivel; Prabhu, D.; Pandiyarasan, V.; Ikeda, H.; Therese, H. A.

2018-05-01

Perpendicular Magnetic Anisotropy (PMA) was realized in as-deposited Mo(10)/Co2FeAl0.5Si0.5(CFAS)(3)/MgO(0.5)/Mo multilayer stacks with large perpendicular magnetic anisotropy energy (Keff). PMA of this multilayer is found to be strongly dependent on the thickness of the individual CFAS (tCFAS), Mo (tMo) and MgO (tMgO) layers and annealing temperatures. The interactions at the Mo/CFAS/MgO interfaces are critical to induce PMA and are tuned by the interfacial oxidation. The major contribution to PMA is due to iron oxide at the CFAS/MgO interface. X-ray diffraction (XRD) and infrared spectroscopic (FT-IR) studies further ascertain this. However, an adequate oxidation of MgO and the formation of (0 2 4) and (0 1 8) planes of α-Fe2O3 at the optimal Mo buffer layer thickness is mainly inducing PMA in Mo/CFAS/MgO/Mo stack. Microstructural changes in the films are observed by atomic force microscopy (AFM). X-ray photoelectron spectroscopy (XPS) demonstrates the oxidation of CFAS/MgO interface and the formation of Fe-O bonds confirming that the real origin of PMA in Mo/CFAS/MgO is due to hybridization of Fe (3dz2) and O (2pz) orbitals and the resulted spin-orbit interaction at their interface. The half-metallic nature CFAS with Mo layer exhibiting PMA can be a potential candidate as p-MTJs electrodes for the new generation spintronic devices.

Magnetic ground and remanent states of synthetic metamagnets with perpendicular anisotropy

International Nuclear Information System (INIS)

Kiselev, N S; Roessler, U K; Bogdanov, A N; Hellwig, O

2011-01-01

In this work, we summarize our theoretical results within a phenomenological micromagnetic approach for magnetic ground state and nonequilibrium states as topological magnetic defects in multilayers with strong perpendicular anisotropy and antiferromagnetic (AF) interlayer exchange coupling (IEC), e.g. [Co/Pt(Pd)]/Ru(Ir, NiO). We give detailed analysis of our model together with the most representative results which elucidate common features of such systems. We discuss phase diagrams of the magnetic ground state, and compare solutions of our model with experimental data. A model to assess the stability of so-called tiger tail patterns is presented. It is found that these modulated topological defect cannot be stabilized by an interplay between magnetostatic and IEC energies only. It is argued that tiger tail patterns arise as nuclei of ferro-stripe structure in AF domain walls and that they are stabilized by domain wall pinning.

Relaxation dynamics of magnetization transitions in synthetic antiferromagnet with perpendicular anisotropy

Science.gov (United States)

Talantsev, A.; Lu, Y.; Fache, T.; Lavanant, M.; Hamadeh, A.; Aristov, A.; Koplak, O.; Morgunov, R.; Mangin, S.

2018-04-01

Two synthetic antiferromagnet bilayer systems with strong perpendicular anisotropy CoFeB/Ta/CoFeB and Pt/Co/Ir/Co/Pt have been grown using sputtering techniques. For both systems two types of magnetization transitions have been studied. The first one concerns transitions from a state where magnetizations of the two magnetic layers are parallel (P state) to a state where magnetizations of the two layers are aligned antiparallel (AP state). The second one concerns transitions between the two possible antiparallel alignments (AP+  to AP-). For both systems and both transitions after-effect measurements can be understood in the frame of nucleation—propagation model. Time derivative analysis of magnetic relaxation curves and mapping of the first order reversal curves at different temperature allowed us to demonstrate the presence of different pinning centers, which number can be controlled by magnetic field and temperature.

Layering and temperature-dependent magnetization and anisotropy of naturally produced Ni/NiO multilayers

Energy Technology Data Exchange (ETDEWEB)

Pappas, S. D.; Trachylis, D.; Velgakis, M. J. [Laboratory of High-Tech Materials, School of Engineering, University of Patras, 26504 Patras (Greece); Kapaklis, V.; Joensson, P. E.; Papaioannou, E. Th. [Department of Physics and Astronomy, Uppsala University, Box 516, SE-751 20 Uppsala (Sweden); Delimitis, A. [Chemical Process Engineering Research Institute (CPERI), Centre for Research and Technology Hellas (CERTH), 57001 Thermi, Thessaloniki (Greece); Poulopoulos, P. [Laboratory of High-Tech Materials, School of Engineering, University of Patras, 26504 Patras (Greece); Institut fuer Experimentalphysik, Freie Universitaet Berlin, Arnimallee 14, D-14195 Berlin-Dahlem (Germany); Materials Science Department, University of Patras, 26504 Patras (Greece); Fumagalli, P. [Institut fuer Experimentalphysik, Freie Universitaet Berlin, Arnimallee 14, D-14195 Berlin-Dahlem (Germany); Politis, C. [Laboratory of High-Tech Materials, School of Engineering, University of Patras, 26504 Patras (Greece); Department of Materials Science and Engineering, University of Texas at Arlington, Arlington, Texas 76019 (United States)

2012-09-01

Ni/NiO multilayers were grown by magnetron sputtering at room temperature, with the aid of the natural oxidation procedure. That is, at the end of the deposition of each single Ni layer, air is let to flow into the vacuum chamber through a leak valve. Then, a very thin NiO layer ({approx}1.2 nm) is formed. Simulated x-ray reflectivity patterns reveal that layering is excellent for individual Ni-layer thickness larger than 2.5 nm, which is attributed to the intercalation of amorphous NiO between the polycrystalline Ni layers. The magnetization of the films, measured at temperatures 5-300 K, has almost bulk-like value, whereas the films exhibit a trend to perpendicular magnetic anisotropy (PMA) with an unusual significant positive interface anisotropy contribution, which presents a weak temperature dependence. The power-law behavior of the multilayers indicates a non-negligible contribution of higher order anisotropies in the uniaxial anisotropy. Bloch-law fittings for the temperature dependence of the magnetization in the spin-wave regime show that the magnetization in the multilayers decreases faster as a function of temperature than the one of bulk Ni. Finally, when the individual Ni-layer thickness decreases below 2 nm, the multilayer stacking vanishes, resulting in a dramatic decrease of the interface magnetic anisotropy and consequently in a decrease of the perpendicular magnetic anisotropy.

Magnetic Anisotropy by Rashba Spin-Orbit Coupling in Antiferromagnetic Thin Films

Science.gov (United States)

Ieda, Jun'ichi; Barnes, Stewart E.; Maekawa, Sadamichi

2018-05-01

Magnetic anisotropy in an antiferromagnet (AFM) with inversion symmetry breaking (ISB) is investigated. The magnetic anisotropy energy (MAE) resulting from the Rashba spin-orbit and s-d type exchange interactions is determined for two different models of AFMs. The global ISB model, representing the effect of a surface, an interface, or a gating electric field, results in an easy-plane magnetic anisotropy. In contrast, for a local ISB model, i.e., for a noncentrosymmetric AFM, perpendicular magnetic anisotropy (PMA) arises. Both results differ from the ferromagnetic case, in which the result for PMA depends on the band structure and dimensionality. These MAE contributions play a key role in determining the direction of the Néel order parameter in antiferromagnetic nanostructures, and reflect the possibility of electrical-field control of the Néel vector.

Effect of soft underlayer magnetic anisotropy on perpendicular recording process

International Nuclear Information System (INIS)

Lim, C.K.; Kim, E.S.; Yoon, S.Y.; Kong, S.H.; Lee, H.S.; Oh, H.S.; Kim, Y.S.

2007-01-01

The presence of the soft magnetic underlayer (SUL) in perpendicular magnetic recording (PMR) media is essential for the application. It is commonly understood that the SUL provides the return flux path and enhances the writing field by enhancing the recording field from the write pole. However, SUL increases the magnetic noise during the read back process due to magnetic domain walls in the SUL. Hence, it is common to grow SUL with large uniaxial or unidirectional magnetic anisotropy field (H k ) to reduce domain wall noise. In this paper, we explore the effect of increasing SUL H k on the recording process. We studied this effect by using the finite element micromagnetic simulation. Our simulation results show that the contribution of SUL to the writing field amplitude is reduced with increasing H k . This reduction in magnetic field from high H k SUL actually improves the recording performance due to the better field gradient at SUL. The simulation results are qualitatively consistent with the actual experimental data obtained from the Guzik measurement

Magnetic anisotropy, damping, and interfacial spin transport in Pt/LSMO bilayers

Directory of Open Access Journals (Sweden)

H. K. Lee

2016-05-01

Full Text Available We report ferromagnetic resonance measurements of magnetic anisotropy and damping in epitaxial La0.7Sr0.3MnO3 (LSMO and Pt capped LSMO thin films on SrTiO3 (001 substrates. The measurements reveal large negative perpendicular magnetic anisotropy and a weaker uniaxial in-plane anisotropy that are unaffected by the Pt cap. The Gilbert damping of the bare LSMO films is found to be low α = 1.9(1 × 10−3, and two-magnon scattering is determined to be significant and strongly anisotropic. The Pt cap increases the damping by 50% due to spin pumping, which is also directly detected via inverse spin Hall effect in Pt. Our work demonstrates efficient spin transport across the Pt/LSMO interface.

Magnetic anisotropy, damping, and interfacial spin transport in Pt/LSMO bilayers

Energy Technology Data Exchange (ETDEWEB)

Lee, H. K., E-mail: hankl@uci.edu; Barsukov, I.; Yang, L.; Krivorotov, I. N. [Physics and Astronomy, University of California, Irvine, California 92697 (United States); Swartz, A. G.; Kim, B. [Geballe Laboratory for Advanced Materials, Department of Applied Physics, Stanford University, Stanford, California 94305 (United States); Hwang, H. Y. [Geballe Laboratory for Advanced Materials, Department of Applied Physics, Stanford University, Stanford, California 94305 (United States); Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, California 94025 (United States)

2016-05-15

We report ferromagnetic resonance measurements of magnetic anisotropy and damping in epitaxial La{sub 0.7}Sr{sub 0.3}MnO{sub 3} (LSMO) and Pt capped LSMO thin films on SrTiO{sub 3} (001) substrates. The measurements reveal large negative perpendicular magnetic anisotropy and a weaker uniaxial in-plane anisotropy that are unaffected by the Pt cap. The Gilbert damping of the bare LSMO films is found to be low α = 1.9(1) × 10{sup −3}, and two-magnon scattering is determined to be significant and strongly anisotropic. The Pt cap increases the damping by 50% due to spin pumping, which is also directly detected via inverse spin Hall effect in Pt. Our work demonstrates efficient spin transport across the Pt/LSMO interface.

On the Relationship of Magnetocrystalline Anisotropy and Stoichiometry in Epitaxial L1{sub 0} CoPt(001) and FePt(001) Thin Films

Energy Technology Data Exchange (ETDEWEB)

Barmak, K

2004-08-10

Two series of epitaxial CoPt and FePt films, with nominal thicknesses of 42 or 50 nm, were prepared by sputtering onto single crystal MgO(001) substrates in order to investigate the chemical ordering and the resultant magnetic properties as a function of alloy composition. In the first series, the film composition was kept constant, while the substrate temperature was increased from 144 to 704 C. In the second series the substrate temperature was kept constant at 704 C for CoPt and 620 C for FePt, while the alloy stoichiometry was varied in the nominalrange of 40-60 at% Co(Fe). Film compositions and thicknesses were measured via Rutherford backscattering spectrometry. The lattice and long-range order parameter for the L1{sub 0} phase were obtained for both sets of films using x-ray diffraction. The room-temperature magnetocrystalline anisotropy constants were determined for a subset of the films using torque magnetometry. The order parameter was found to increase with increasing temperature, with ordering occurring more readily in FePt when compared with CoPt. A perpendicular anisotropy developed in CoPt for substrate temperatures above 534 C and in FePt above 321 C. The structure and width of the magnetic domains in CoPt and FePt, as seen by magnetic force microscopy, also demonstrated an increase in magnetic anisotropy with increasing temperature. For the films deposited at the highest temperatures (704 C for CoPt and 620 C for FePt), the order parameter reached a maximum near the equiatomic composition, whereas the magnetocrystalline anisotropy increased as the concentration of Co or Fe was increased from below to slightly above the equiatomic composition. It is concluded that non-stoichiometric L1{sub 0} CoPt and FePt, with a slight excess of Co or Fe, are preferable for applications requiring the highest anisotropies.

Depth-Dependent Anisotropies of Amides and Sugar in Perpendicular and Parallel Sections of Articular Cartilage by Fourier Transform Infrared Imaging (FTIRI)

Science.gov (United States)

Xia, Yang; Mittelstaedt, Daniel; Ramakrishnan, Nagarajan; Szarko, Matthew; Bidthanapally, Aruna

2010-01-01

Full thickness blocks of canine humeral cartilage were microtomed into both perpendicular sections and a series of 100 parallel sections, each 6 μm thick. Fourier Transform Infrared Imaging (FTIRI) was used to image each tissue section eleven times under different infrared polarizations (from 0° to 180° polarization states in 20° increments and with an additional 90° polarization), at a spatial resolution of 6.25 μm and a wavenumber step of 8 cm−1. With increasing depth from the articular surface, amide anisotropies increased in the perpendicular sections and decreased in the parallel sections. Both types of tissue sectioning identified a 90° difference between amide I and amide II in the superficial zone of cartilage. The fibrillar distribution in the parallel sections from the superficial zone was shown to not be random. Sugar had the greatest anisotropy in the upper part of the radial zone in the perpendicular sections. The depth-dependent anisotropic data were fitted with a theoretical equation that contained three signature parameters, which illustrate the arcade structure of collagens with the aid of a fibril model. Infrared imaging of both perpendicular and parallel sections provides the possibility of determining the three-dimensional macromolecular structures in articular cartilage. Being sensitive to the orientation of the macromolecular structure in healthy articular cartilage aids the prospect of detecting the early onset of the tissue degradation that may lead to pathological conditions such as osteoarthritis. PMID:21274999

Microstructure and magnetic properties of nanocomposite FePt/MgO and FePt/Ag films

International Nuclear Information System (INIS)

Chen, S.C.; Kuo, P.C.; Sun, A.C.; Chou, C.Y.; Fang, Y.H.; Wu, T.H.

2006-01-01

An in-plane magnetic anisotropy of FePt film is obtained in the MgO 5 nm/FePt t nm/MgO 5 nm films (where t=5, 10 and 20 nm). Both the in-plane coercivity (H c- parallel ) and the perpendicular magnetic anisotropy of FePt films are increased when introducing an Ag-capped layer instead of MgO-capped layer. An in-plane coercivity is 3154 Oe for the MgO 5 nm/FePt 10 nm/MgO 5 nm film, and it can be increased to 4846 Oe as a 5 nm Ag-capped layer instead of MgO-capped layer. The transmission electron microscopy (TEM)-energy disperse spectrum (EDS) analysis shows that the Ag mainly distributed at the grain boundary of FePt, that leads the increase of the grain boundary energy, which will enhance coercivity and perpendicular magnetic anisotropy of FePt film

3D and 1D calculation of hysteresis loops and energy products for anisotropic nanocomposite films with perpendicular anisotropy

International Nuclear Information System (INIS)

Yuan, X.H.; Zhao, G.P.; Yue, Ming; Ye, L.N.; Xia, J.; Zhang, X.C.; Chang, J.

2013-01-01

In this paper, the magnetic reversal process, hysteresis loops and energy products for exchange-coupled Nd 2 Fe 14 B/α-Fe bilayers are studied systematically by a three-dimensional (3D) model. The 3D calculations are numerically solved using the finite difference method, where the results are carefully compared with those calculated by one-dimensional (1D) model. It is found that the calculated hysteresis loops and energy products based on the two methods are consistent with each other. Both nucleation fields and coercivities decrease monotonically as the soft layer thickness L s increases. In addition, the calculated spatial distributions of magnetization orientations in the thickness direction at various applied fields based on both methods signify a three-step magnetic reversal process, which are nucleation, growth and displacement of the domain wall. The calculated magnetic orientations within the film plane, however, are totally different according to the two methods. The 3D calculation exhibits a process of vortex formation and annihilation. On the other hand, the 1D calculation gives a quasi-coherent one, where magnetization orientation is coherent in the film plane and varies in the thickness direction. This new reversal mechanism displayed in the film plane has a systematic influence on the nucleation fields, coercivity and energy products. - Highlights: • Consistent hysteresis loops and energy products for 3D and 1D calculation. • Domain wall formation, evolution and displacement perpendicular to the film plane. • Vortex formation, annihilation and better loop squareness in 3D calculation. • Larger nucleation fields, remanence and smaller coercivity in 3D calculation

Magnetocrystalline anisotropy and its electric-field-assisted switching of Heusler-compound-based perpendicular magnetic tunnel junctions

International Nuclear Information System (INIS)

Bai, Zhaoqiang; Wu, Qingyun; Zeng, Minggang; Feng, Yuan Ping; Shen, Lei; Cai, Yongqing; Han, Guchang

2014-01-01

Employing density functional theory combined with the non-equilibrium Green's function formalism, we systematically investigate the structural, magnetic and magnetoelectric properties of the Co 2 FeAl(CFA)/MgO interface, as well as the spin-dependent transport characteristics of the CFA/MgO/CFA perpendicular magnetic tunnel junctions (p-MTJs). We find that the structure of the CFA/MgO interface with the oxygen-top FeAl termination has high thermal stability, which is protected by the thermodynamic equilibrium limit. Furthermore, this structure is found to have perpendicular magnetocrystalline anisotropy (MCA). Giant electric-field-assisted modifications of this interfacial MCA through magnetoelectric coupling are demonstrated with an MCA coefficient of up to 10 −7 erg V −1 cm. In addition, our non-collinear spin transport calculations of the CFA/MgO/CFA p-MTJ predict a good magnetoresistance performance of the device. (paper)

Effect of tilted anisotropy on spin states of strongly anisotropic 2D film

International Nuclear Information System (INIS)

Fridman, Yu. A.; Klevets, F. N.; Gorelikov, G. A.

2012-01-01

The spin states of a 2D film with a strong easy-plane anisotropy and single-ion tilted anisotropy, the axis of which forms a certain angle with the normal to the film plane are investigated. In this system, an angular ferromagnetic phase, a spatially inhomogeneous state, and a quadrupole phase can be formed; the realization of these states noticeably depends on the degree of tilted anisotropy.

Tunnel magnetoresistance in thermally robust Mo/CoFeB/MgO tunnel junction with perpendicular magnetic anisotropy

Directory of Open Access Journals (Sweden)

B. Fang

2015-06-01

Full Text Available We report on tunnel magnetoresistance and electric-field effect in the Mo buffered and capped CoFeB/MgO magnetic tunnel junctions (MTJs with perpendicular magnetic anisotropy. A large tunnel magnetoresistance of 120% is achieved. Furthermore, this structure shows greatly improved thermal stability and stronger electric-field-induced modulation effect in comparison with the Ta/CoFeB/MgO-based MTJs. These results suggest that the Mo-based MTJs are more desirable for next generation spintronic devices.

Remarkable strain-induced magnetic anisotropy in epitaxial Co2MnGa (0 0 1) films

International Nuclear Information System (INIS)

Pechan, Michael J.; Yu, Chengtao; Carr, David; Palmstroem, Chris J.

2005-01-01

Remarkably large, strain-induced anisotropy is observed in the thin-film Heusler alloy Co 2 MnGa. 30 nm Co 2 MnGa (0 0 1) films have been epitaxially grown on different interlayers/substrates with varied strain, and investigated with ferromagnetic resonance. The film grown on ErAs/InGaAs/InP experiences tension strain, resulting in an out-of-plane strain-induced anisotropy (∼1.1x10 6 erg/cm 3 ) adding to the effects of shape anisotropy. In contrast, the film grown on ScErAs/GaAs, experiences a compression strain, resulting in an out-of-plane strain-induced anisotropy (∼3.3x10 6 erg/cm 3 ) which almost totally cancels the effects of shape anisotropy, thus rendering the film virtually isotropic. This results in the formation of stripe domains in remanence. In addition, small, but well-defined 2-fold and 4-fold in-plane anisotropy coexist in each sample with weak, but interesting strain dependence. Transport measurement shows small (<1%) magnetoresistance effects in the compression film, but negligible magnetoresistance in the relaxed and tension strained samples

Influence of stresses and magnetostriction on the soft magnetic behavior of metallic films

NARCIS (Netherlands)

Chezan, AR; Craus, CB; Chechenin, NG; Vystavel, T; Niesen, L; De Hosson, JTM; Boerma, DO

Nanocrystalline soft magnetic Fe-Zr-N films have been successfully deposited by DC magnetron reactive sputtering. For thick films (>200 nm), the compressive stress in the as-deposited films and the positive matgnetostriction produce perpendicular anisotropy. The magnitude of this effect is smaller

Effects of deposition temperature and in-situ annealing time on structure and magnetic properties of (001) orientation FePt films

International Nuclear Information System (INIS)

Yu, Yongsheng; George, T.A.; Li, Haibo; Sun, Daqian; Ren, Zhenan; Sellmyer, D.J.

2013-01-01

FePt films were prepared on (100) oriented single crystal MgO substrates at high temperature ranging from 620 until 800 °C and in-situ annealed for different times ranging from 0 to 60 min to obtain ordered FePt films. The structural analysis indicates that FePt films grow epitaxially on MgO (100) substrates. Both increasing deposition temperature and in-situ annealing time enhance the (001) texture and ordering of FePt films. The magnetic analysis shows that these L1 0 FePt films have perpendicular anisotropy and the easy magnetization c-axis is perpendicular to the film plane. Magnetization reversal is controlled by a rotational mechanism. The hard magnetic properties of the films are improved with increasing deposition temperature or in-situ annealing time. - Highlights: ► The paper reports the texture and magnetic evolution of FePt films deposited on MgO substrates. ► Increasing deposition temperature or annealing time enhanced the texture and ordering. ► The magnetic analysis shows L1 0 FePt films have perpendicular anisotropy.

Artificially controlled stress anisotropy and magnetic properties of FeTaN thin films

International Nuclear Information System (INIS)

Deng, H.; Jarratt, J.D.; Minor, M.K.; Barnard, J.A.

1997-01-01

This article presents a new method of investigating internal stress effects on thin film magnetic properties, in this case magnetically soft FeTaN sputtered films. The FeTaN films were deposited on a series of oxidized silicon (111) substrates prestressed to different degrees. During sputtering all the deposition conditions were kept exactly the same for all the samples. However, anisotropic stresses with different amplitudes are systematically introduced into the films when the prestressed wafers were released. In this way, FeTaN films with compressive stress varying from 80 to 608 MPa are produced. We found that the saturation magnetostriction (λ s ), anisotropy field (H k ), initial permeability (μ i ) as well as easy axis orientation of FeTaN thin films are strongly affected by the induced stress anisotropy. A stress ratio concept is proposed as a measure of the degree of the stress anisotropy. Models for easy-hard axis switching induced by stress for magnetic films with positive magnetostriction are discussed. copyright 1997 American Institute of Physics

First-principles investigation of the very large perpendicular magnetic anisotropy at Fe | MgO and Co | MgO interfaces

KAUST Repository

Yang, H. X.; Chshiev, M.; Dieny, B.; Lee, J. H.; Manchon, Aurelien; Shin, K. H.

2011-01-01

The perpendicular magnetic anisotropy (PMA) arising at the interface between ferromagnetic transition metals and metallic oxides was investigated via first-principles calculations. In this work very large values of PMA, up to 3 erg/cm2, at Fe|MgO interfaces are reported, in agreement with recent experiments. The origin of PMA is attributed to overlap between O-pz and transition metal dz2 orbitals hybridized with dxz(yz) orbitals with stronger spin-orbit coupling-induced splitting around the Fermi level for perpendicular magnetization orientation. Furthermore, it is shown that the PMA value weakens in the case of over- or underoxidation due to the fact that oxygen pz and transition metal dz2 orbital overlap is strongly affected by disorder, in agreement with experimental observations in magnetic tunnel junctions.

First-principles investigation of the very large perpendicular magnetic anisotropy at Fe | MgO and Co | MgO interfaces

KAUST Repository

Yang, H. X.

2011-08-01

The perpendicular magnetic anisotropy (PMA) arising at the interface between ferromagnetic transition metals and metallic oxides was investigated via first-principles calculations. In this work very large values of PMA, up to 3 erg/cm2, at Fe|MgO interfaces are reported, in agreement with recent experiments. The origin of PMA is attributed to overlap between O-pz and transition metal dz2 orbitals hybridized with dxz(yz) orbitals with stronger spin-orbit coupling-induced splitting around the Fermi level for perpendicular magnetization orientation. Furthermore, it is shown that the PMA value weakens in the case of over- or underoxidation due to the fact that oxygen pz and transition metal dz2 orbital overlap is strongly affected by disorder, in agreement with experimental observations in magnetic tunnel junctions.

Giant enhancement of magnetocrystalline anisotropy in ultrathin manganite films via nanoscale 1D periodic depth modulation

Science.gov (United States)

Rajapitamahuni, Anil; Zhang, Le; Singh, Vijay; Burton, John; Koten, Mak; Shield, Jeffrey; Tsymbal, Evgeny; Hong, Xia

We report a unusual giant enhancement of in-plane magnetocrystalline anisotropy (MCA) in ultrathin colossal magnetoresistive oxide films due to 1D nanoscale periodic depth modulation. High quality epitaxial thin films of La0.67Sr0.33MnO3 (LSMO) of thickness 6 nm were grown on (001) SrTiO3 substrates via off-axis radio frequency magnetron sputtering. The top 2 nm of LSMO films are patterned into periodic nano-stripes using e-beam lithography and reactive ion etching. The resulting structure consists of nano-stripes of 2 nm height and 100-200 nm width on top of a 4 nm thick continuous base layer. We employed planar Hall effect measurements to study the in-plane magnetic anisotropy of the unpatterned and nanopatterned films. The unpatterned films show a biaxial anisotropy with easy axis along [110]. The extracted anisotropy energy density is ~1.1 x 105 erg/cm3, comparable to previously reported values. In the nanopatterned films, a strong uniaxial anisotropy is developed along one of the biaxial easy axes. The corresponding anisotropy energy density is ~5.6 x 106 erg/cm3 within the nano-striped volume, comparable to that of Co. We attribute the observed uniaxial MCA to MnO6 octahedral rotations/tilts and the enhancement in the anisotropy energy density to the strain gradient within the nano-stripes.

Some device implications of voltage controlled magnetic anisotropy in Co/Gd2O3 thin films through REDOX chemistry

Science.gov (United States)

Hao, Guanhua; Noviasky, Nicholas; Cao, Shi; Sabirianov, Ildar; Yin, Yuewei; Ilie, Carolina C.; Kirianov, Eugene; Sharma, Nishtha; Sokolov, Andrei; Marshall, Andrew; Xu, Xiaoshan; Dowben, Peter A.

2018-04-01

The effect of intermediate interfacial oxidation on the in-plane magnetization of multilayer stack Pt/Co/Gd2O3, on a p-type silicon substrate, has been investigated by magneto-optical Kerr effect (MOKE) measurements, the anomalous Hall effect, and magnetoresistance measurements. While voltage controlled perpendicular magnetic anisotropy of a metal/oxide heterostructure is known, this heterostructure displays an inverse relationship between voltage and coercivity. The anomalous Hall effect demonstrates a significant change in hysteresis, with the applied bias sign. There is a higher perpendicular magnetic anisotropy with positive bias exposure.

Voltage control of a magnetic switching field for magnetic tunnel junctions with low resistance and perpendicular magnetic anisotropy

Science.gov (United States)

Tezuka, N.; Oikawa, S.; Matsuura, M.; Sugimoto, S.; Nishimura, K.; Irisawa, T.; Nagamine, Y.; Tsunekawa, K.

2018-05-01

The authors investigated the voltage control of a magnetic anisotropy field for perpendicular-magnetic tunnel junctions (p-MTJs) with low and high resistance-area (RA) products and for synthetic antiferromagnetic free and pinned layers. It was found that the sample with low RA products was more sensitive to the applied bias voltage than the sample with high RA products. The bias voltage effect was less pronounced for our sample with the synthetic antiferromagnetic layer for high RA products compared to the MTJs with single free and pinned layers.

Wave and particle evolution downstream of quasi-perpendicular shocks

Science.gov (United States)

Mckean, M. E.; Omidi, N.; Krauss-Varban, D.; Karimabadi, H.

1995-01-01

Distributions of ions heated in quasi-perpendicular bow shocks have large perpendicular temperature anisotropies that provide free energy for the growth of Alfven ion cyclotron (AIC) and mirror waves. These modes are often obsreved in the Earth's magnetosheath. Using two-dimensional hybrid simulations, we show that these waves are produced near the shock front and convected downstream rather than being produced locally downstream. The wave activity reduces the proton anisotropy to magnetosheath levels within a few tens of gyroradii of the shock but takes significantly longer to reduce the anisotropy of He(++) ions. The waves are primarily driven by proton anisotropy and the dynamics of the helium ions is controlled by the proton waves. Downstream of high Mach number shocks, mirror waves compete effectively with AIC waves. Downstream of low Mach number shocks, AIC waves dominate.

Magnetic properties of amorphous Tb-Fe thin films with an artificially layered structure

International Nuclear Information System (INIS)

Sato, N.

1986-01-01

An alternating terbium-iron (Tb-Fe) multilayer structure artificially made in amorphous Tb-Fe thin films gives rise to excellent magnetic properties of large perpendicular uniaxial anisotropy, large saturation magnetization, and large coercivity over a wide range of Tb composition in the films. The films are superior to amorphous Tb-Fe alloy thin films, especially when they are piled up with a monatomic layer of Tb and several atomic layers of Fe in an alternating fashion. Small-angle x-ray diffraction analysis confirmed the layering of monatomic layers of Tb and Fe, where the periodicity of the layers was found to be about 5.9 A. Direct evidence for an artificially layered structure was obtained by transmission electron microscopic and Auger electron spectroscopic observations. Together with magnetic measurements of hysteresis loops and torque curves, it has been concluded that the most important origin of the large magnetic uniaxial anisotropy can be attributed to the Tb-Fe pairs aligned perpendicular to the films

Lack of dependence between intrinsic magnetic damping and perpendicular magnetic anisotropy in Cu(t{sub Cu})/[Ni/Co]{sub N} multilayers

Energy Technology Data Exchange (ETDEWEB)

Tang, Minghong [Key Laboratory of Micro and Nano Photonic Structures (Ministry of Education), Department of Optical Science and Engineering, Fudan University, Shanghai 200433 (China); Li, Wei [State Key Laboratory of Precision Spectroscopy, East China Normal University, Shanghai 200062 (China); Ren, Yang [School of Physics and Astronomy, Yunnan University, Kunming 650000 (China); Zhang, Zongzhi, E-mail: zzzhang@fudan.edu.cn [Key Laboratory of Micro and Nano Photonic Structures (Ministry of Education), Department of Optical Science and Engineering, Fudan University, Shanghai 200433 (China); Jin, Q.Y. [Key Laboratory of Micro and Nano Photonic Structures (Ministry of Education), Department of Optical Science and Engineering, Fudan University, Shanghai 200433 (China)

2017-04-15

The correlation between magnetic damping and perpendicular magnetic anisotropy has been investigated in Cu(t{sub Cu})/[Ni/Co]{sub N} multilayers by time-resolved magneto-optical Kerr effect. The uniaxial magnetic anisotropy constant K{sub u} is varied in the range of 3.0–3.6 Merg/cm{sup 3} by tuning either multilayer repetition number N or Cu thickness t{sub Cu}. It is found that the PMA strength K{sub u} increases with the increase of N, while the damping constant α{sub 0} keeps nearly a constant of 0.025, implying the intrinsic damping is independent of the K{sub u} tuned by N. In contrast, as t{sub Cu} increases from 2.5 to 20 nm, the α{sub 0} value rises continuously up to 0.040, in spite of the rather weak enhancement in K{sub u} and its non-monotonic variation behavior. We consider the constant α{sub 0} with N is due to the unchanged spin-orbit coupling strength at each Co/Ni interface, while the obvious enhancement in α{sub 0} with t{sub Cu} results mainly from the increased degree of spin disordering at the rougher Cu/Ni interface. - Highlights: • The perpendicular magnetic anisotropy K{sub u} is tuned in Cu(t{sub Cu})/[Ni/Co]{sub N} system. • The intrinsic magnetic damping is found to be independent K{sub u}. • Extrinsic damping increases with t{sub Cu} due to large interfacial spin disordering.

Thickness dependence of the magnetic anisotropy and dynamic magnetic response of ferromagnetic NiFe films

International Nuclear Information System (INIS)

Silva, E F; Corrêa, M A; Chesman, C; Bohn, F; Della Pace, R D; Plá Cid, C C; Kern, P R; Carara, M; Alves Santos, O; Rodríguez-Suárez, R L; Azevedo, A; Rezende, S M

2017-01-01

We investigate the thickness dependence of the magnetic anisotropy and dynamic magnetic response of ferromagnetic NiFe films. We go beyond quasi-static measurements and focus on the dynamic magnetic response by considering three complementary techniques: the ferromagnetic resonance, magnetoimpedance and magnetic permeability measurements. We verify remarkable modifications in the magnetic anisotropy, i.e. the well-known behavior of in-plane uniaxial magnetic anisotropy systems gives place to a complex magnetic behavior as the thickness increases, and splits the films in two groups according to the magnetic properties. We identify magnetoimpedance and magnetic permeability curves with multiple resonance peaks, as well as the evolution of the ferromagnetic resonance absorption spectra, as fingerprints of strong changes of the magnetic properties associated to the vanishing of the in-plane magnetic anisotropy and to the emergence of non-homogeneous magnetization configuration, local anisotropies and out-of-plane anisotropy contribution arisen as a consequence of the non-uniformities of the stress stored in the film as the thickness is increased and/or to the columnar growth of the film. We interpret the experimental results in terms of the structural and morphological properties, quasi-static magnetic behavior, magnetic domain structure and different mechanisms governing the magnetization dynamics at distinct frequency ranges. (paper)

Magnetic anisotropy of Ni/Cr multilayers

International Nuclear Information System (INIS)

Kang, S.; Xia, H.

1997-01-01

The magnetic anisotropy of Ni/Cr multilayers has been investigated by using vibrating sample magnetometer (VSM) and ferromagnetic resonance techniques (FMR). The FMR spectra are obtained as a function of the orientation of the applied magnetic field from in-plane to out-of-plane. The results are fitted theoretically to determine the magnetic anisotropy. From VSM and FMR, a positive value for Ni/Cr interface anisotropy is obtained, which favours a perpendicular easy axis. The possible mechanism for the perpendicular anisotropy has been discussed and it may be attributed to the magnetostriction, caused by intrinsic stress due to lattice mismatch. (orig.). With 005 figs., 001 tabs

Fourfold magnetic anisotropy, coercivity and magnetization reversal of Co/V bilayers grown on MgO(0 0 1)

Energy Technology Data Exchange (ETDEWEB)

Calleja, J F [Departamento de Fisica, Facultad de Ciencias, Universidad de Oviedo, Calvo Sotelo s/n, 33007 Oviedo (Spain); Muro, M GarcIa del [Departament de Fisica Fonamental and Institut de Nanociencia i Nanotecnologia IN2UB de la Universitat de Barcelona, MartIi Franques, 1, E-08028 Barcelona (Spain); Presa, B [Departamento de Fisica, Facultad de Ciencias, Universidad de Oviedo, Calvo Sotelo s/n, 33007 Oviedo (Spain); Matarranz, R [Departamento de Fisica, Facultad de Ciencias, Universidad de Oviedo, Calvo Sotelo s/n, 33007 Oviedo (Spain); Corrales, J A [Departmento de Informatica, Universidad de Oviedo, Edificio Departamental 1, Campus de Viesques s/n, 33204 Gijon (Spain); Labarta, A [Departament de Fisica Fonamental and Institut de Nanociencia i Nanotecnologia IN2UB de la Universitat de Barcelona, MartIi Franques, 1, E-08028 Barcelona (Spain); Contreras, M C [Departamento de Fisica, Facultad de Ciencias, Universidad de Oviedo, Calvo Sotelo s/n, 33007 Oviedo (Spain)

2007-11-21

Magnetic anisotropy and magnetization reversal of Al/Co/V/MgO(0 0 1) thin films have been investigated. The films were fabricated by magnetron sputtering. The roles of both Co and V layers thicknesses have been studied. Magnetic characterization has been carried out by transverse susceptibility (TS) measurements and hysteresis loops. Cobalt is grown in the hcp structure on V with the c axis parallel to the film plane. Two types of hcp Co crystal are grown with the c axes perpendicular to each other. This structure gives rise to a fourfold magnetic anisotropy. When the V layer thickness is below 40 A a superimposed uniaxial anisotropy develops, the effect of which is a depression in the TS, in agreement with theoretical calculations. This uniaxial anisotropy is induced by the substrate and due to a discontinuous growth of the V layer. For hcp Co grown on V, the magnetic anisotropy rapidly increases with Co layer thickness. In this case, unexpected shifted hysteresis loops along the hard axes were observed when the films were not saturated. This has been explained by taking into account the magnetization reversal along the hard axis: it proceeds via magnetization rotation of some portions of the film at high fields, and by domain wall motion of the rest of the film at lower field values.

Fourfold magnetic anisotropy, coercivity and magnetization reversal of Co/V bilayers grown on MgO(0 0 1)

International Nuclear Information System (INIS)

Calleja, J F; Muro, M GarcIa del; Presa, B; Matarranz, R; Corrales, J A; Labarta, A; Contreras, M C

2007-01-01

Magnetic anisotropy and magnetization reversal of Al/Co/V/MgO(0 0 1) thin films have been investigated. The films were fabricated by magnetron sputtering. The roles of both Co and V layers thicknesses have been studied. Magnetic characterization has been carried out by transverse susceptibility (TS) measurements and hysteresis loops. Cobalt is grown in the hcp structure on V with the c axis parallel to the film plane. Two types of hcp Co crystal are grown with the c axes perpendicular to each other. This structure gives rise to a fourfold magnetic anisotropy. When the V layer thickness is below 40 A a superimposed uniaxial anisotropy develops, the effect of which is a depression in the TS, in agreement with theoretical calculations. This uniaxial anisotropy is induced by the substrate and due to a discontinuous growth of the V layer. For hcp Co grown on V, the magnetic anisotropy rapidly increases with Co layer thickness. In this case, unexpected shifted hysteresis loops along the hard axes were observed when the films were not saturated. This has been explained by taking into account the magnetization reversal along the hard axis: it proceeds via magnetization rotation of some portions of the film at high fields, and by domain wall motion of the rest of the film at lower field values

Nd3-xBixFe4GaO12 (x = 2, 2.5 films on glass substrates prepared by MOD method

Directory of Open Access Journals (Sweden)

Yoshida T.

2014-07-01

Full Text Available We studied Nd3-XBiXFe4GaO12 films to obtain perpendicular magnetic anisotropy as well as large Faraday effect. NdBi2Fe4GaO12 (Bi2:NIGG and Nd0.5Bi2.5Fe4GaO12 (Bi2.5:NIGG films were obtained on Nd2BiFe4GaO12 (Bi1:NIGG layer prepared on glass substrates by metal-organic decomposition (MOD method. Bi2:NIGG and Bi2.5:NIGG films showed large Faraday rotation angles of 7.5 and 10.5 degree/µm, at a wavelength of 520 nm, respectively. Those films have perpendicular magnetic anisotropy with a coercivity of 350 Oe and a saturation magnetic field of 730 Oe.

X-ray magnetic circular dichroism and hard X-ray photoelectron spectroscopy of tetragonal Mn72Ge28 epitaxial thin film

Science.gov (United States)

Kim, Jinhyeok; Mizuguchi, Masaki; Inami, Nobuhito; Ueno, Tetsuro; Ueda, Shigenori; Takanashi, Koki

2018-04-01

An epitaxially grown Mn72Ge28 film with a tetragonal crystal structure was fabricated. It was clarified that the film had a perpendicular magnetization and a high perpendicular magnetic anisotropy energy of 14.3 Merg/cm3. The electronic structure was investigated by X-ray magnetic circular dichroism and hard X-ray photoelectron spectroscopy. The obtained X-ray magnetic circular dichroism spectrum revealed that the Mn orbital magnetic moment governed the magnetocrystalline anisotropy of the Mn72Ge28 film. A doublet structure was observed for the Mn 2p3/2 peak of hard X-ray photoelectron spectrum, indicating the spin exchange interaction between the 2p core-hole and 3d valence electrons.

High thermal stability in W/MgO/CoFeB/W/CoFeB/W stacks via ultrathin W insertion with perpendicular magnetic anisotropy

Energy Technology Data Exchange (ETDEWEB)

Liu, Yi; Yu, Tao [School of Physics and Nuclear Energy Engineering, Beihang University, Beijing 100191 (China); Zhu, Zhengyong; Zhong, Huicai [Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029 (China); Khamis, Khamis Masoud [School of Physics and Nuclear Energy Engineering, Beihang University, Beijing 100191 (China); Zhu, Kaigui, E-mail: kgzhu@buaa.edu.cn [School of Physics and Nuclear Energy Engineering, Beihang University, Beijing 100191 (China); Key Laboratory of Micro-Nano Measurement-Manipulation and Physics, Ministry of Education, Beihang University, Beijing 100191 (China)

2016-07-15

The perpendicular magnetic anisotropy (PMA) of a series of top MgO/CoFeB/W stacks were studied. In these stacks, the thickness of CoFeB is limited in a range of 1.1–2.2 nm. It was found that the stack can still maintain PMA in a 1.9 nm thick CoFeB free layer. Besides, we investigated the thermal stability factor ∆ of a spin transfer torque magnetic random access memory (STT-MRAM) by inserting an ultra-thin W film of 0.8 nm between two CoFeB films. The result shows a clear PMA behavior for the samples with CoFeB thickness up to 2.5 nm, and an in-plane magnetic anisotropy (IMA) when the CoFeB is thicker than 2.5 nm. Moreover, the thermal stability factor ∆ of the CoFeB stack with W insertion is about 132 for a 50 nm size STT-MRAM device, which is remarkably improved compared to 112 for a sample without W insertion. Our results represent an alternative way to realize the endurance at high annealing temperature, high-density and high ∆ in STT-MRAM device by ultra-thin W insertion. - Highlights: • The MgO/CoFeB/W multilayer can still maintain PMA in a CoFeB thickness of 1.9 nm. • The sample with 2.5 nm thickness of CoFeB by W insertion can still maintain PMA. • The sample with W insertion can still maintain PMA until the annealing temperature as high as 350 °C. • The thermal stability factor ∆ of sample with W insertion could be increase to about 132 for a 50 nm size STT-MRAM device.

Ferromagnetic resonance and spin-wave resonances in GaMnAsP films

Science.gov (United States)

Liu, Xinyu; Li, Xiang; Bac, Seul-Ki; Zhang, Xucheng; Dong, Sining; Lee, Sanghoon; Dobrowolska, Margaret; Furdyna, Jacek K.

2018-05-01

A series of Ga1-xMnxAs1-yPy films grown by MBE on GaAs (100) substrates was systematically studied by ferromagnetic resonance (FMR). Magnetic anisotropy parameters were obtained by analyzing the angular dependence of the FMR data. The results clearly show that the easy axis of the films shifts from the in-plane [100] direction to the out-of-plane [001], indicating the emergence of a strong tensile-strain-induced perpendicular anisotropy when the P content exceeds y ≈ 0.07. Multiple resonances were observed in Ga1-xMnxAs1-yPy films with thicknesses over 48 nm, demonstrating the existence of exchange-dominated non-propagating spin-wave modes governed by surface anisotropy.

Magnetic and transport properties of single and double perpendicular magnetic tunnel junctions

International Nuclear Information System (INIS)

Cuchet, Lea

2015-01-01

Due to their advantageous properties in terms of data retention, storage density and critical current density for Spin Transfer Torque (STT) switching, the magnetic tunnel junctions with perpendicular anisotropy have become predominant in the developments for MRAM applications. The aim of this thesis is to improve the anisotropy and transport properties of such structures and to realize even more complex stacks such as perpendicular double junctions. Studies on the magnetic properties and Tunnel Magnetoresistance (TMR) measurements showed that to optimize the performances of the junctions, all the thicknesses of the different layers constituting the stack have to be adapted. To guaranty both a large TMR as well a strong perpendicular anisotropy, compromises are most of the time needed. Studies as a function of magnetic thickness enabled to extract the saturation magnetization, the critical thickness and the magnetic dead layer thickness both in the bottom reference and the top storage layer in structures capped with Ta. This type of junction could be tested electrically after patterning the sample into nano-pillars. Knowing that perpendicular anisotropy mostly arises at the metal/oxide interface, the Ta capping layer was replaced by a MgO one, leading to a huge increase in the anisotropy of the free layer. A second top reference was then added on such a stack to create functional perpendicular double junctions. CoFeB/insertion/CoFeB synthetic antiferromagnetic storage layers could be developed and were proved to be stable enough to replace the standard Co/Pt-based reference layers. (author) [fr

Magnetic anisotropy in iron thin films evaporated under ultra-high vacuum

International Nuclear Information System (INIS)

Dinhut, J.F.; Eymery, J.P.; Krishnan, R.

1992-01-01

α-iron thin films with thickness ranging between 20 and 1500 nm have been evaporated using an electron gun under ultra-high vacuum conditions (5.10 -7 P). The columnar structure observed in cross-sectional TEM is related to the large surface diffusion. From Moessbauer spectra the spin orientation is deduced and found to be influenced by the column axis. Spins can be obtained perpendicularly to the film plane by rotating the substrte during the deposition. The magnetization of the samples is reduced by about 30% and the reduction attributed to the interstitial space which increases with the incident angle. The substrate rotation also decreases Ku( parallel ) by a factor 2 and increases Ku( perpendicular to ). (orig.)

Investigation of magnetic anisotropy and role of underlayer in obliquely sputtered metallic thin films

International Nuclear Information System (INIS)

Lisfi, A.; Nguyen, L.T.; Lodder, J.C.; Williams, C.M.

2004-01-01

Co and Co-Ni films have been obliquely sputtered on polyethylene terephthalate (PET) with and without Cr underlayer. The spin-reorientation observed in films directly deposited on PET is related to the low magnetocrystalline anisotropy of Co (FCC) and change in microstructure from columns to elongated nuclei. Cr underlayer enhances magnetic anisotropy due to HCP structure of Co, which dominates the shape of columns. The double switching in Co/Cr films grown at 70 deg. is a consequence of low packing density of Cr columns of the underlayer

Stochastic simulation of thermally assisted magnetization reversal in sub-100 nm dots with perpendicular anisotropy

International Nuclear Information System (INIS)

Purnama, Budi; Koga, Masashi; Nozaki, Yukio; Matsuyama, Kimihide

2009-01-01

Thermally assisted magnetization reversal of sub-100 nm dots with perpendicular anisotropy has been investigated using a micromagnetic Langevin model. The performance of the two different reversal modes of (i) a reduced barrier writing scheme and (ii) a Curie point writing scheme are compared. For the reduced barrier writing scheme, the switching field H swt decreases with an increase in writing temperature but is still larger than that of the Curie point writing scheme. For the Curie point writing scheme, the required threshold field H th , evaluated from 50 simulation results, saturates at a value, which is not simply related to the energy barrier height. The value of H th increases with a decrease in cooling time owing to the dynamic aspects of the magnetic ordering process. Dependence of H th on material parameters and dot sizes has been systematically studied

Origin of interfacial perpendicular magnetic anisotropy in MgO/CoFe/metallic capping layer structures.

Science.gov (United States)

Peng, Shouzhong; Wang, Mengxing; Yang, Hongxin; Zeng, Lang; Nan, Jiang; Zhou, Jiaqi; Zhang, Youguang; Hallal, Ali; Chshiev, Mairbek; Wang, Kang L; Zhang, Qianfan; Zhao, Weisheng

2015-12-11

Spin-transfer-torque magnetic random access memory (STT-MRAM) attracts extensive attentions due to its non-volatility, high density and low power consumption. The core device in STT-MRAM is CoFeB/MgO-based magnetic tunnel junction (MTJ), which possesses a high tunnel magnetoresistance ratio as well as a large value of perpendicular magnetic anisotropy (PMA). It has been experimentally proven that a capping layer coating on CoFeB layer is essential to obtain a strong PMA. However, the physical mechanism of such effect remains unclear. In this paper, we investigate the origin of the PMA in MgO/CoFe/metallic capping layer structures by using a first-principles computation scheme. The trend of PMA variation with different capping materials agrees well with experimental results. We find that interfacial PMA in the three-layer structures comes from both the MgO/CoFe and CoFe/capping layer interfaces, which can be analyzed separately. Furthermore, the PMAs in the CoFe/capping layer interfaces are analyzed through resolving the magnetic anisotropy energy by layer and orbital. The variation of PMA with different capping materials is attributed to the different hybridizations of both d and p orbitals via spin-orbit coupling. This work can significantly benefit the research and development of nanoscale STT-MRAM.

Study of anisotropy, magnetization reversal and damping in ultrathin Co films on MgO (0 0 1) substrate

Science.gov (United States)

Mallik, Srijani; Bedanta, Subhankar

2018-01-01

Ultrathin Co films of 3 nm thickness have been prepared on MgO (0 0 1) substrate in presence or absence of substrate pre-annealing. Uniaxial anisotropy is induced in the samples due to the deposition under oblique angle of incidence. Along with the oblique deposition induced anisotropy, another uniaxial anisotropy contribution has been observed due to pre-annealing. However, no cubic anisotropy has been observed here as compared to the thicker films. Angle dependent ferromagnetic resonance (FMR) measurement confirms the presence of two anisotropies in the pre-annealed sample with ∼18° misalignment with each other. The two anisotropy constants were calculated from both superconducting quantum interference device (SQUID) magnetometry and FMR spectroscopy. The magnetization reversal is governed by nucleation dominated aftereffect followed by domain wall motion for the pre-annealed sample. Branched domains are observed for the sample prepared without pre-annealing which indicates grain disorientation of Co. However, in the thicker (25 nm) Co films ripple domains were observed in contrary to ultrathin (3 nm) films.

Perpendicular Structure Formation of Block Copolymer Thin Films during Thermal Solvent Vapor Annealing : Solvent and Thickness Effects

NARCIS (Netherlands)

Yang, Qiuyan; Loos, Katja

2017-01-01

Solvent vapor annealing of block copolymer (BCP) thin films can produce a range of interesting morphologies, especially when the perpendicular orientation of micro-domains with respect to the substrate plays a role. This, for instance, allows BCP thin films to serve as useful templates for

Strong out-of-plane magnetic anisotropy in ion irradiated anatase TiO2 thin films

Directory of Open Access Journals (Sweden)

M. Stiller

2016-12-01

Full Text Available The temperature and field dependence of the magnetization of epitaxial, undoped anatase TiO2 thin films on SrTiO3 substrates was investigated. Low-energy ion irradiation was used to modify the surface of the films within a few nanometers, yet with high enough energy to produce oxygen and titanium vacancies. The as-prepared thin film shows ferromagnetism which increases after irradiation with low-energy ions. An optimal and clear magnetic anisotropy was observed after the first irradiation, opposite to the expected form anisotropy. Taking into account the experimental parameters, titanium vacancies as di-Frenkel pairs appear to be responsible for the enhanced ferromagnetism and the strong anisotropy observed in our films. The magnetic impurities concentrations was measured by particle-induced X-ray emission with ppm resolution. They are ruled out as a source of the observed ferromagnetism before and after irradiation.

Freezing field dependence of the exchange bias in uniaxial FeF sub 2 -CoPt heterosystems with perpendicular anisotropy

CERN Document Server

Kagerer, B; Kleemann, W

2000-01-01

The exchange bias effect is measured for the first time in FeF sub 2 -CoPt heterosystems with perpendicular anisotropy. The exchange field exhibits a strong dependence on the axial freezing field. This behavior is explained in terms of the microscopic spin structure at the interface, which is established on cooling to below T sub N. We calculate the dependence of the spin structure on the freezing field within the framework of an Ising model. It takes into account the Zeeman energy as well as an antiferromagnetic exchange coupling between the adjacent layers at the interface.

Controlling the induced anisotropy in soft magnetic films for high-frequency applications

NARCIS (Netherlands)

Chezan, A.R.; Craus, C.B.; Chechenin, N.G.; Vystavel, T.; Hosson, J.Th.M. De; Niesen, L.; Boerma, D.O.

Nanocrystalline soft magnetic Fe–Zr–N films were successfully deposited by dc magnetron reactive sputtering. The nitrogen content was controlled by varying the Ar/N2 ratio and/or the substrate temperature. The films have saturation magnetization and induced uniaxial anisotropy values in the range

Magnetic domains in Ni-Mn-Ga martensitic thin films

International Nuclear Information System (INIS)

Chernenko, V A; Anton, R Lopez; Kohl, M; Ohtsuka, M; Orue, I; Barandiaran, J M

2005-01-01

A series of martensitic Ni 52 Mn 24 Ga 24 thin films deposited on alumina ceramic substrates has been prepared by using RF(radio-frequency) magnetron sputtering. The film thickness, d, varies from 0.1 to 5.0m. Magnetic domain patterns have been imaged by the MFM (magnetic force microscopy) technique. A maze domain structure is found for all studied films. MFM shows a large out-of-plane magnetization component and a rather uniform domain width for each film thickness. The domain width, δ, depends on the film thickness as δ∝√d in the whole studied range of film thickness. This dependence is the expected one for magnetic anisotropy and magnetostatic contributions in a perpendicular magnetic domain configuration. The proportionality coefficient is also consistent with the values of saturation magnetization and magnetic anisotropy determined in the samples

(0 0 1) textured CoPt-Ag nanocomposite films for high-density perpendicular magnetic recording

International Nuclear Information System (INIS)

Xue, S.X.; Wang, H.; Wang, H.B.; Yang, F.J.; Wang, J.A.; Cao, X.; Gao, Y.; Huang, Z.B.; Li, Z.Y.; Li, Q.; Wong, S.P.

2006-01-01

CoPt/Ag nanocomposite films were prepared by magnetron sputtering. The dependence of texture and magnetic properties on film thickness, Ag atomic fraction and annealing conditions is investigated. Films with a thickness about 20 nm are easy to form with (0 0 1) orientation. The existence of the Ag in the film plays a dominant role in inducing the (0 0 1) texture of the film and suppressing the growth of the CoPt grains during annealing. The Co 35 Pt 38 Ag 27 film after annealing at 600 deg. C exhibits a large perpendicular coercivity of 5.6 kOe and a squareness of 0.90 with a small average grains size of 12.5 nm

Bending behaviour of polypyrrole films with anisotropy for artificial muscles

International Nuclear Information System (INIS)

Onoda, Mitsuyoshi; Shonaka, Hirokazu; Tada, Kazuya

2006-01-01

A polypyrrole (PPy) film electrochemically grown in a thin slab vessel consisting of poly(tetrafluoroethylene) walls exhibits a notable anisotropy along the thickness direction. This anisotropy allows the film to bend in a regular direction upon electrochemical undoping and revert upon doping. In this study, the size effect, i.e. the length dependence of reduction current, of the actuator has been studied. The length was changed by trimming the tip of the actuator, 12 mm of which was initially soaked in an electrolyte. It has been clarified that current saturates when the actuator exceeds a certain length. This may reflect the reduction in the conductivity of PPy upon undoping, which makes the tip of the actuator almost insulated from the power source. It is also found that the width of the actuator and the electrolyte do not influence the size effect

Surface-termination-dependent magnetism and strong perpendicular magnetocrystalline anisotropy of an FeRh(001) thin film

Czech Academy of Sciences Publication Activity Database

Jekal, S.; Rhim, S.H.; Hong, S.C.; Son, W.-J.; Shick, Alexander

2015-01-01

Roč. 92, č. 6 (2015), " 064410-1"-" 064410-6" ISSN 1098-0121 R&D Projects: GA ČR GA15-07172S Institutional support: RVO:68378271 Keywords : magnetic anisotropy * magnetic recording * surface science Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.736, year: 2014

Role of the substrate on the magnetic anisotropy of magnetite thin films grown by ion-assisted deposition

International Nuclear Information System (INIS)

Prieto, Pilar; Prieto, José Emilio; Gargallo-Caballero, Raquel; Marco, José Francisco; Figuera, Juan de la

2015-01-01

Graphical abstract: - Highlights: • The magnetic anisotropy of magnetite thin films is controlled by the substrate induced microstructure. • Single-crystal oxide substrates induce fourfold in-plane magnetic anisotropy • MgO and SrTiO_3 substrates show the same magnetic behavior despite its different mismatch with Fe_3O_4 films. • Silicon and glass substrates induce in-plane magnetic isotropy and uniaxial anisotropy, respectively. - Abstract: Magnetite (Fe_3O_4) thin films were deposited on MgO (0 0 1), SrTiO_3 (0 0 1), LaAlO_3 (0 0 1) single crystal substrates as well on as silicon and amorphous glass in order to study the effect of the substrate on their magnetic properties, mainly the magnetic anisotropy. We have performed a structural, morphological and compositional characterization by X-ray diffraction, atomic force microscopy and Rutherford backscattering ion channeling in oxygen resonance mode. The magnetic anisotropy has been investigated by vectorial magneto-optical Kerr effect. The results indicate that the magnetic anisotropy is especially influenced by the substrate-induced microstructure. In-plane isotropy and uniaxial anisotropy behavior have been observed on silicon and glass substrates, respectively. The transition between both behaviors depends on grain size. For LaAlO_3 substrates, in which the lattice mismatch between the Fe_3O_4 films and the substrate is significant, a weak in-plane fourfold magnetic anisotropy is induced. However when magnetite is deposited on MgO (0 0 1) and SrTiO_3 (0 0 1) substrates, a well-defined fourfold in-plane magnetic anisotropy is observed with easy axes along [1 0 0] and [0 1 0] directions. The magnetic properties on these two latter substrates are similar in terms of magnetic anisotropy and coercive fields.

Perpendicular Structure Formation of Block Copolymer Thin Films during Thermal Solvent Vapor Annealing: Solvent and Thickness Effects

Directory of Open Access Journals (Sweden)

Qiuyan Yang

2017-10-01

Full Text Available Solvent vapor annealing of block copolymer (BCP thin films can produce a range of interesting morphologies, especially when the perpendicular orientation of micro-domains with respect to the substrate plays a role. This, for instance, allows BCP thin films to serve as useful templates for nanolithography and hybrid materials preparation. However, precise control of the arising morphologies is essential, but in most cases difficult to achieve. In this work, we investigated the solvent and thickness effects on the morphology of poly(styrene-b-2 vinyl pyridine (PS-b-P2VP thin films with a film thickness range from 0.4 L0 up to 0.8 L0. Ordered perpendicular structures were achieved. One of the main merits of our work is that the phase behavior of the ultra-high molecular weight BCP thin films, which hold a 100-nm sized domain distance, can be easily monitored via current available techniques, such as scanning electron microscope (SEM, atomic force microscope (AFM, and transmission electron microscope (TEM. Systematic monitoring of the self-assembly behavior during solvent vapor annealing can thus provide an experimental guideline for the optimization of processing conditions of related BCP films systems.

Magnetic and structural properties of Co2FeAl thin films grown on Si substrate

International Nuclear Information System (INIS)

Belmeguenai, Mohamed; Tuzcuoglu, Hanife; Gabor, Mihai; Petrisor, Traian; Tiusan, Coriolan; Berling, Dominique; Zighem, Fatih; Mourad Chérif, Salim

2015-01-01

The correlation between magnetic and structural properties of Co 2 FeAl (CFA) thin films of different thicknesses (10 nmfilms. The deduced lattice parameter increases with the film thickness. Moreover, pole figures showed no in-plane preferential growth orientation. The magneto-optical Kerr effect hysteresis loops showed the presence of a weak in-plane uniaxial anisotropy with a random easy axis direction. The coercive field, measured with the applied field along the easy axis direction, and the uniaxial anisotropy field increase linearly with the inverse of the CFA thickness. The microstrip line ferromagnetic resonance measurements for in-plane and perpendicular applied magnetic fields revealed that the effective magnetization and the uniaxial in-plane anisotropy field follow a linear variation versus the inverse CFA thickness. This allows deriving a perpendicular surface anisotropy coefficient of −1.86 erg/cm 2 . - Highlights: • Various Co 2 FeAl thin films were grown on a Si(001) substrates and annealed at 600 °C. • The thickness dependence of magnetic and structural properties has been studied. • X-ray measurements revealed an (011) out-of-plane textured growth of the films. • The easy axis coercive field varies linearly with the inverse CFA thickness. • The effective magnetization increases linearly with the inverse film thickness

Structural and magnetic anisotropy in the epitaxial FeV2O4 (110) spinel thin films

Science.gov (United States)

Shi, Xiaolan; Wang, Yuhang; Zhao, Kehan; Liu, Na; Sun, Gaofeng; Zhang, Liuwan

2015-11-01

The epitaxial 200-nm-thick FeV2O4(110) films on (110)-oriented SrTiO3, LaAlO3 and MgAl2O4 substrates were fabricated for the first time by pulsed laser deposition, and the structural, magnetic, and magnetoresistance anisotropy were investigated systematically. All the films are monoclinic, whereas its bulk is cubic. Compared to FeV2O4 single crystals, films on SrTiO3 and MgAl2O4 are strongly compressively strained in [001] direction, while slightly tensily strained along normal [110] and in-plane [ 1 1 ¯ 0 ] directions. In contrast, films on LaAlO3 are only slightly distorted from cubic. The magnetic hard axis is in direction, while the easier axis is along normal [110] direction for films on SrTiO3 and MgAl2O4, and in-plane [ 1 1 ¯ 0 ] direction for films on LaAlO3. Magnetoresistance anisotropy follows the magnetization. The magnetic anisotropy is dominated by the magnetocrystalline energy, and tuned by the magneto-elastic coupling.

Structural anisotropy in amorphous SnO2 film probed by X-ray absorption spectroscopy

Science.gov (United States)

Zhu, Q.; Ma, Q.; Buchholz, D. B.; Chang, R. P. H.; Bedzyk, M. J.; Mason, T. O.

2013-07-01

Polarization-dependent X-ray absorption measurements reveal the existence of structural anisotropy in amorphous (a-) SnO2 film. The anisotropy is readily seen for the second neighbor interaction whose magnitude differs along three measured directions. The differences can be well accounted for by 10%-20% variation in the Debye-Waller factor. Instead of a single Gaussian distribution found in crystalline SnO2, the Sn-O bond distribution is bimodal in a-SnO2 whose separation shows a weak angular dependence. The oxygen vacancies, existing in the a-SnO2 film in the order of 1021 cm-3, distribute preferentially along the film surface direction.

Nano-patterning of perpendicular magnetic recording media by low-energy implantation of chemically reactive ions

International Nuclear Information System (INIS)

Martin-Gonzalez, M.S.; Briones, F.; Garcia-Martin, J.M.; Montserrat, J.; Vila, L.; Faini, G.; Testa, A.M.; Fiorani, D.; Rohrmann, H.

2010-01-01

Magnetic nano-patterning of perpendicular hard disk media with perpendicular anisotropy, but preserving disk surface planarity, is presented here. Reactive ion implantation is used to locally modify the chemical composition (hence the magnetization and magnetic anisotropy) of the Co/Pd multilayer in irradiated areas. The procedure involves low energy, chemically reactive ion irradiation through a resist mask. Among N, P and As ions, P are shown to be most adequate to obtain optimum bit density and topography flatness for industrial Co/Pd multilayer media. The effect of this ion contributes to isolate perpendicular bits by destroying both anisotropy and magnetic exchange in the irradiated areas. Low ion fluences are effective due to the stabilization of atomic displacement levels by the chemical effect of covalent impurities.

Spin-wave resonance frequency in ferromagnetic thin film with interlayer exchange coupling and surface anisotropy

Science.gov (United States)

Zhang, Shuhui; Rong, Jianhong; Wang, Huan; Wang, Dong; Zhang, Lei

2018-01-01

We have investigated the dependence of spin-wave resonance(SWR) frequency on the surface anisotropy, the interlayer exchange coupling, the ferromagnetic layer thickness, the mode number and the external magnetic field in a ferromagnetic superlattice film by means of the linear spin-wave approximation and Green's function technique. The SWR frequency of the ferromagnetic thin film is shifted to higher values corresponding to those of above factors, respectively. It is found that the linear behavior of SWR frequency curves of all modes in the system is observed as the external magnetic field is increasing, however, SWR frequency curves are nonlinear with the lower and the higher modes for different surface anisotropy and interlayer exchange coupling in the system. In addition, the SWR frequency of the lowest (highest) mode is shifted to higher (lower) values when the film thickness is thinner. The interlayer exchange coupling is more important for the energetically higher modes than for the energetically lower modes. The surface anisotropy has a little effect on the SWR frequency of the highest mode, when the surface anisotropy field is further increased.

Description of spin reorientation transition in Au/Co/Au sandwich with Co film thickness within a simple phenomenological model of ferromagnetic film

International Nuclear Information System (INIS)

Popov, A.P.

2012-01-01

Simple phenomenological model of ferromagnetic film characterized by equal energies of surface anisotropies at two sides of a film (symmetric film) is considered. The model is used to describe a two-step spin reorientation transition (SRT) in Au/Co/Au sandwich with Co film thickness: the SRT from perpendicular to canted noncollinear (CNC) state at N ⊥ =6.3 atomic layers and the subsequent SRT from CNC to in-plane state at N ∥ =10.05 atomic layers. Analytic expressions for the stability criterion of collinear perpendicular and in-plane states of a film are derived with account of discrete location of atomic layers. The dependence of borders that separate regions corresponding to various magnetic states of a film in the (k B ,k S )-diagram on film thickness N is established. k S (k B ) is surface (bulk) reduced anisotropy constant. The comparison of theory with experiment related to Au/Co/Au sandwich shows that there is a whole region in the (k B ,k S )-diagram corresponding to experimentally determined values of threshold film thicknesses N ⊥ =6.3 and N ∥ =10.05. The comparison of this region with similar region determined earlier for a bare Co/Au film within the same model of asymmetric film and characterized by N ⊥ =3.5, N ∥ =5.5 shows that the intersection of these regions is not empty. Hence, both the SRT in Au/Co/Au sandwich and in bare Co/Au film with Co film thickness can be described within the same model using the same magnitudes of model parameters k S , k B . Based on this result we conclude that the energy of Neel surface anisotropy at free Co surface is negligible compared to the energy of Co–Au interface anisotropy. It is demonstrated that the destabilization of collinear states in symmetric film leads to occurrence of the ground CNC state and two novel metastable CNC states. These three CNC states exhibit different kinds of symmetry. In case of asymmetric film only ground CNC state occurs on destabilization of collinear states of a film

Magnetic and structural properties of Co{sub 2}FeAl thin films grown on Si substrate

Energy Technology Data Exchange (ETDEWEB)

Belmeguenai, Mohamed, E-mail: belmeguenai.mohamed@univ-paris13.fr [LSPM (CNRS-UPR 3407) 99 Avenue Jean-Baptiste Clément Université Paris 13, 93430 Villetaneuse (France); Tuzcuoglu, Hanife [LSPM (CNRS-UPR 3407) 99 Avenue Jean-Baptiste Clément Université Paris 13, 93430 Villetaneuse (France); Gabor, Mihai; Petrisor, Traian [Center for Superconductivity, Spintronics and Surface Science, Technical University of Cluj-Napoca, Street Memorandumului No. 28, RO-400114 Cluj-Napoca (Romania); Tiusan, Coriolan [Center for Superconductivity, Spintronics and Surface Science, Technical University of Cluj-Napoca, Street Memorandumului No. 28, RO-400114 Cluj-Napoca (Romania); Institut Jean Lamour, CNRS, Université de Nancy, BP 70239, F-54506 Vandoeuvre (France); Berling, Dominique [IS2M (CNRS-LRC 7228), 15 rue Jean Starcky, Université de Haute-Alsace, BP 2488, 68057 Mulhouse-Cedex (France); Zighem, Fatih; Mourad Chérif, Salim [LSPM (CNRS-UPR 3407) 99 Avenue Jean-Baptiste Clément Université Paris 13, 93430 Villetaneuse (France)

2015-01-01

The correlation between magnetic and structural properties of Co{sub 2}FeAl (CFA) thin films of different thicknesses (10 nmfilms. The deduced lattice parameter increases with the film thickness. Moreover, pole figures showed no in-plane preferential growth orientation. The magneto-optical Kerr effect hysteresis loops showed the presence of a weak in-plane uniaxial anisotropy with a random easy axis direction. The coercive field, measured with the applied field along the easy axis direction, and the uniaxial anisotropy field increase linearly with the inverse of the CFA thickness. The microstrip line ferromagnetic resonance measurements for in-plane and perpendicular applied magnetic fields revealed that the effective magnetization and the uniaxial in-plane anisotropy field follow a linear variation versus the inverse CFA thickness. This allows deriving a perpendicular surface anisotropy coefficient of −1.86 erg/cm{sup 2}. - Highlights: • Various Co{sub 2}FeAl thin films were grown on a Si(001) substrates and annealed at 600 °C. • The thickness dependence of magnetic and structural properties has been studied. • X-ray measurements revealed an (011) out-of-plane textured growth of the films. • The easy axis coercive field varies linearly with the inverse CFA thickness. • The effective magnetization increases linearly with the inverse film thickness.

Thick CoFeB with perpendicular magnetic anisotropy in CoFeB-MgO based magnetic tunnel junction

Directory of Open Access Journals (Sweden)

V. B. Naik

2012-12-01

Full Text Available We have investigated the effect of an ultra-thin Ta insertion in the CoFeB (CoFeB/Ta/CoFeB free layer (FL on magnetic and tunneling magnetoresistance (TMR properties of a CoFeB-MgO system with perpendicular magnetic anisotropy (PMA. It is found that the critical thickness (tc to sustain PMA is doubled (tc = 2.6 nm in Ta-inserted CoFeB FL as compared to single CoFeB layer (tc = 1.3 nm. While the effective magnetic anisotropy is found to increase with Ta insertion, the saturation magnetization showed a slight reduction. As the CoFeB thickness increasing, the thermal stability of Ta inserted structure is significantly increased by a factor of 2.5 for total CoFeB thickness less than 2 nm. We have observed a reasonable value of TMR for a much thicker CoFeB FL (thickness = 2-2.6 nm with Ta insertion, and without significant increment in resistance-area product. Our results reveal that an ultra-thin Ta insertion in CoFeB might pay the way towards developing the high-density memory devices with enhanced thermal stability.

Role of polarizer-tilting-angle in zero-field spin-transfer nano-oscillators with perpendicular anisotropy

Energy Technology Data Exchange (ETDEWEB)

Gonzalez-Fuentes, C.; Gallardo, R. A., E-mail: rodolfo.gallardo@usm.cl; Landeros, P. [Departamento de Física, Universidad Técnica Federico Santa María, Avenida España 1680, 2390123 Valparaíso (Chile)

2015-10-05

An analytical model for studying the stability of a single domain ferromagnetic layer under the influence of a spin-polarized current is presented. The theory is applied to bias-field-free nano-oscillators with perpendicular anisotropy, which allows to obtain a polarizer-angle vs. current phase diagram that describes the stability of magnetic states. Explicit formulae for the critical current densities unveil the influence of the relative orientation between free and polarizer layers, allowing the emergence of precessional steady-states, and also the possibility to reduce the magnitude of the threshold current density to produce microwave oscillations. It is shown that oscillating steady-states arise in a broad angular region, and the dependence of their boundaries is fully specified by the model. The reliability of the analytical results has been corroborated by comparison to numerical calculations. Such structures are currently under intense research because of remarkable properties offering new prospects for microwave applications in communication technologies.

Spin wave propagation in perpendicularly magnetized nm-thick yttrium iron garnet films

Science.gov (United States)

Chen, Jilei; Heimbach, Florian; Liu, Tao; Yu, Haiming; Liu, Chuanpu; Chang, Houchen; Stückler, Tobias; Hu, Junfeng; Zeng, Lang; Zhang, Youguang; Liao, Zhimin; Yu, Dapeng; Zhao, Weisheng; Wu, Mingzhong

2018-03-01

Magnonics offers a new way for information transport that uses spin waves (SWs) and is free of charge currents. Unlike Damon-Eshbach SWs, the magneto-static forward volume SWs offer the reciprocity configuration suitable for SW logic devices with low power consumption. Here, we study forward volume SW propagation in yttrium iron garnet (YIG) thin films with an ultra-low damping constant α = 8 ×10-5 . We design different integrated microwave antenna with different k-vector excitation distributions on YIG thin films. Using a vector network analyzer, we measured SW transmission with the films magnetized in perpendicular orientation. Based on the experimental results, we extract the group velocity as well as the dispersion relation of SWs and directly compare the power efficiency of SW propagation in YIG using coplanar waveguide and micro stripline for SW excitation and detection.

Critical currents in multilayered superconducting films

International Nuclear Information System (INIS)

Raffy, Helene

1977-01-01

The superconducting critical currents Isub(c) were measured as a function of magnetic field H and temperature T, on multilayered films. These films consist of alternating layers of two different superconductors S 1 and S 2 being a weaker superconductor acting as a flux pinning barrier region. A strong anisotropy was observed between the two situations where the magnetic field H is applied parallel or perpendicular to the layers. In the case discussed, there is a peak effect in the curves Isub(c)H well defined at the highest temperatures, and disappearing at low temperatures. The anisotropy of the critical current at constant field presents a maximum at a temperature T* close to the critical temperature Tsub(c 2 ) of S 2 [fr

Field-impressed anisotropy of susceptibility in iron-terbium thin films

International Nuclear Information System (INIS)

Stephenson, A.; Booth, N.A.

1995-01-01

Two thin films of Fe 1-x Tb x where x=0.17 and 0.23 are shown to exhibit the effect of field-impressed anisotropy. After application of a direct field of 80 mT, which gives them an isothermal remanent magnetization (IRM) in their plane, the anisotropy of initial susceptibility differs from that measured after the films have been tumble-demagnetized. By subtracting the susceptibility results of the tumble-demagnetized state from those obtained after the application of the 80 mT direct field, it is shown that the effect of this field is to decrease the susceptibility measured along the former applied field direction and to increase the susceptibility at right angles to this. The effect is almost certainly due to changes in domain alignment. Even though these films contain many domains, the above results are similar to those previously obtained for single-domain γFe 2 O 3 and magnetite particles. The sense of the effect is opposite to that for multi-domain magnetite particles where the susceptibility has been found to increase along the previously applied field direction. ((orig.))

Electric-field tunable perpendicular magnetic anisotropy in tetragonal Fe4N/BiFeO3 heterostructures

Science.gov (United States)

Yin, Li; Wang, Xiaocha; Mi, Wenbo

2017-07-01

Electric field control on perpendicular magnetic anisotropy (PMA) is indispensable for spintronic devices. Herewith, in tetragonal Fe4N/BiFeO3 heterostructures with the FeAFeB/Fe-O2 interface, PMA in each Fe4N layer, not merely interfacial layers, is modulated by the electric field, which is attributed to the broken spin screening of the electric field in highly spin-polarized Fe4N. Moreover, the periodical dx y+dy z+dz2 and dx y+dx2-y2 orbital-PMA oscillation enhances the interactions between adjacent FeAFeB and (FeB)2N atomic layers, which benefits the electric field modulation on PMA in the whole Fe4N atomic layers. The electric-field control on PMA in Fe4N/BiFeO3 heterostructures is favored by the electric-field-lifted potential in Fe4N.

Magnetic and structural properties of NdFeB thin film prepared by step annealing

International Nuclear Information System (INIS)

Serrona, Leo K.E.B.; Sugimura, A.; Fujisaki, R.; Okuda, T.; Adachi, N.; Ohsato, H.; Sakamoto, I.; Nakanishi, A.; Motokawa, M.

2003-01-01

The crystallization of the amorphous phase into the tetragonal Nd 2 Fe 14 B (PHI) phase and the corresponding changes in magnetic properties have been examined by step annealing experiment using a 2 μm thick NdFeB film sample. Microstructural and magnetic analysis indicate that the film was magnetically soft as deposited with the coercivity H ciperp -1 and the remnant magnetization 4πM rperp -1 was developed and diffraction analysis showed evidence of PHI phase 002l peaks being aligned perpendicular to the film plane. At an optimum annealing temperature of 575 deg. C, the remnant magnetization of this anisotropic thin film is around 0.60 T with intrinsic coercivity of ∼1340 kA m -1 . Annealing the film sample at 200 deg. C≤T ann ≤750 deg. C showed variations in magnetic properties that were mostly due to the change in the perpendicular anisotropy. Based on 4πM sperpendicular values plotted against T ann , a dip in 4πM sperpendicular values was observed as T ann increased in the soft-to-hard magnetic characteristics transition region and rose as the hard crystalline phase started to form. The results show that the magnetic properties of the NdFeB film were slightly influenced by the presence of NdO, film surface roughening and the small increase in crystal size as a consequence of repeated heat treatment. At T ann ∼300 deg. C, the nominal saturation magnetization indicated a certain degree of weak perpendicular magnetic anisotropy in the film sample considered to be essential in the enhancement of coercivity in crystallized films

Atomically flat surface of (0 0 1) textured FePt thin films by residual stress control

Energy Technology Data Exchange (ETDEWEB)

Liu, S.H. [Department of Materials Science and Engineering, Feng Chia University, Taichung 407, Taiwan (China); Hsiao, S.N., E-mail: pmami.hsiao@gmail.com [Department of Materials Science and Engineering, Feng Chia University, Taichung 407, Taiwan (China); Department of Power Mechanical Engineering, National Tsing Hua University, Hsinchu 300, Taiwan (China); Chou, C.L.; Chen, S.K. [Department of Materials Science and Engineering, Feng Chia University, Taichung 407, Taiwan (China); Lee, H.Y. [National Synchrotron Radiation Research Center, Hsinchu 300, Taiwan (China); Department of Applied Science, National Hsinchu University of Education, Hsinchu 300, Taiwan (China)

2015-11-01

Highlights: • We demonstrate crystallographic structure, (0 0 1) texture, surface roughness, and residual stress in the single-layered FePt thin films annealed at various heating rates (10–110 K/s). • Texture coefficient of (0 0 1)-plane of the samples increases with increasing heating rate from 10 to 40 K/s, which is correlated with perpendicular magnetic anisotropy and in-plane tensile stress. • Dewetting phenomenon due to stress relaxation leads to the broadening of [0 0 1] easy axis and degradation of perpendicular magnetic anisotropy. • A strong dependence of surface roughness on in-plane residual stress was revealed. • When the samples are RTA at 40 K/s, the enhanced perpendicular magnetic anisotropy and atomically surface roughness are achieved. - Abstract: Single-layered Fe{sub 52}Pt{sub 48} films with thickness of 10 nm were sputter-deposited on glass substrates. Rapid thermal annealing with different heating rates (10–110 K/s) was applied to transform as-deposited fcc phase into L1{sub 0} phase and meanwhile to align [0 0 1]-axis of L1{sub 0} crystal along plane normal direction. Based on X-ray diffractometry using synchrotron radiation source, the texture coefficient of (0 0 1)-plane increases with increasing heating rate from 10 to 40 K/s, which is correlated with perpendicular magnetic anisotropy and in-plane tensile stress analyzed by asymmetric sin{sup 2} ψ method. Furthermore, it was revealed by atomic force microscopy that the dewetting process occurred as heating rate was raised up to 80 K/s and higher. The change in the microstructure due to stress relaxation leads to the degradation of (0 0 1) orientation and magnetic properties. Surface roughness is closely related to the in-plane tensile stress. Enhanced perpendicular magnetic anisotropy and atomically flat surface were achieved for the samples annealed at 40 K/s, which may be suitable for further practical applications. This work also suggests a feasible way for surface

Scanning tunneling microscope observation and magnetic anisotropy of molecular beam epitaxy-grown Fe/Pt superlattices with (111) and (001) orientations

International Nuclear Information System (INIS)

Yamamoto, S.; Kato, T.; Iwata, S.; Tsunashima, S.; Uchiyama, S.

2004-01-01

The surface morphology and the perpendicular magnetic anisotropy for (001) and (111) oriented [Pt(nML)/Fe(nML)] 10 superlattices were investigated. From in situ scanning tunneling microscope observation, the small grain whose diameter was about 5-10 nm and height was 0.2-0.4 nm, was observed in the Fe(2 ML) surface grown at room temperature on the Pt(111) seed layer, while the surface of the Fe deposited at 150 deg. C was covered with flat terraces and steps. It is found that the (111) oriented films were all in-plane magnetized. On the other hand, the (001) films were in-plane magnetized at room temperature, perpendicular magnetized at 100 deg. C and 150 deg. C

Feasibilty of a Multi-bit Cell Perpendicular Magnetic Tunnel Junction Device

Science.gov (United States)

Kim, Chang Soo

deposition because the high sputtering power can degrade perpendicular magnetic anisotropy of the bottom L1 0 FePt film and also increase RMS film surface roughness of the MgO tunnel barrier layer. From a lithographically unpatterned PMTJ sample, MR ratio and RA were measured at room temperature by the CIPT method and found to be 138% and 6.4 kOmicrom2, respectively. A completed PMTJ test pattern with a junction size of 80x40 microm2 was fabricated and showed a measured MR ratio and RA product of 108% and 4~6 kOmicrom 2, respectively. These values agree relatively well with the corresponding values of 138% and 6.4 kOmicrom2 obtained from the unpatterned PMTJ sample measured by a current-in-plane tunneling (CIPT) method.

Stress anisotropy and stress gradient in magnetron sputtered films with different deposition geometries

International Nuclear Information System (INIS)

Zhao, Z.B.; Yalisove, S.M.; Bilello, J.C.

2006-01-01

Mo films were deposited via magnetron sputtering with two different deposition geometries: dynamic deposition (moving substrate) and static deposition (fixed substrate). The residual stress and structural morphologies of these films were investigated, with particular focus on in-plane anisotropy of the biaxial stress and stress gradient across the film thickness. The results revealed that the Mo films developed distinct states of residual stress, which depended on both deposition geometry and film thickness. With the dynamic geometry, the Mo films generally exhibited anisotropic stress. Both the degree of anisotropy and the magnitude of stress varied as functions of film thickness. The variation of stress was linked to the evolution of anisotropic microstructures in the films. The Mo films from the static geometry developed isotropic residual stress, which was more compressive and noticeably larger in magnitude than that of the Mo films from the dynamic geometry. Aside from these disparities, the two types of Mo films (i.e., anisotropic and isotropic) exhibited notably similar trends of stress variation with film thickness. Depth profiling indicated the presence of large stress gradients for the Mo films, irrespective of the deposition geometries. This observation seems to be consistent with the premise that Mo films develop a zone T structure, which is inherently inhomogeneous along the film thickness. Moreover, the largest stress gradient for both types of deposition geometries arises at roughly the same film depth (∼240 nm from substrate), where the stresses sharply transits from highly compressive to less compressive or even tensile. This appears to correspond to the boundary region that separates two distinct stages of microstructural evolution, a feature unique to zone T-type structure

Read/write performance of perpendicular double-layered cylindrical media

International Nuclear Information System (INIS)

Yamada, H.; Shimatsu, T.; Watanabe, I.; Tsuchiyama, R.; Aoi, H.; Muraoka, H.; Nakamura, Y.

2005-01-01

A cylindrical magnetic storage system using perpendicular double-layered media has been developed. CoCrTa/CoZrNb deposited on a rotating cylindrical substrate shows perpendicular anisotropy and magnetic properties, which have almost the same characteristics as conventional disk-media. The fundamental read/write characteristics of perpendicular double-layered cylindrical media were measured using a single-pole-type (SPT) writer with a sliding-contact-type slider and a merged giant magneto-resistive (GMR) reader with a one-pad-type slider designed for use with cylindrical media. Preliminary studies for improving the characteristics of the recording layer are also described

Exchange bias and bistable magneto-resistance states in amorphous TbFeCo thin films

Energy Technology Data Exchange (ETDEWEB)

Li, Xiaopu, E-mail: xl6ba@virginia.edu; Ma, Chung T.; Poon, S. Joseph, E-mail: sjp9x@virginia.edu [Department of Physics, University of Virginia, Charlottesville, Virginia 22904 (United States); Lu, Jiwei [Department of Materials Science and Engineering, University of Virginia, Charlottesville, Virginia 22904 (United States); Devaraj, Arun [Environmental Molecular Sciences Laboratory, Pacific Northwest National Laboratory, Richland, Washington 99352 (United States); Spurgeon, Steven R.; Comes, Ryan B. [Physical and Computational Sciences Directorate, Pacific Northwest National Laboratory, Richland, Washington 99352 (United States)

2016-01-04

Amorphous TbFeCo thin films sputter deposited at room temperature on thermally oxidized Si substrate are found to exhibit strong perpendicular magnetic anisotropy. Atom probe tomography, scanning transmission electron microscopy, and energy dispersive X-ray spectroscopy mapping have revealed two nanoscale amorphous phases with different Tb atomic percentages distributed within the amorphous film. Exchange bias accompanied by bistable magneto-resistance states has been uncovered near room temperature by magnetization and magneto-transport measurements. The exchange anisotropy originates from the exchange interaction between the ferrimagnetic and ferromagnetic components corresponding to the two amorphous phases. This study provides a platform for exchange bias and magneto-resistance switching using single-layer amorphous ferrimagnetic thin films that require no epitaxial growth.

On the in-plane uniaxial anisotropy formation by using Fe–Co–Zr–N films: A theoretical and experimental investigation

Energy Technology Data Exchange (ETDEWEB)

Seemann, K., E-mail: klaus.seemann@kit.edu; Beirle, S.; Leiste, H.

2016-09-01

In the present paper a simple theoretical approach for the in-plane uniaxial anisotropy evolution in thin films is introduced. In order to show, what are the conditions for a uniaxial anisotropy formation during annealing a ferromagnetic film in an external static magnetic field, a Hamiltonian, i.e., mean energy balances were established with introducing their annealing temperature dependence. At this point, a 1-dimesional chain-like arrangement of Fe and Co elements for an “isotropic” and uniaxial anisotropy state for the numerical computation was assumed. It was shown that a critical energy and annealing temperature (temperature threshold) can be attained from which a uniaxial anisotropy arises. Comparatively, calculations according to the Neél theory delivered the activation energy for inducing a uniaxial anisotropy. The experimental verification of the calculations, by using Fe{sub 40}Co{sub 37}Zr{sub 11}N{sub 12} films which were produced by reactive magnetron sputtering, yielded the activation energy of about 250 meV. Annealing temperatures above 473 K (200 °C) enabled marked uniaxial anisotropies. This correlated with the numerical quantum mechanical estimations which yielded a critical annealing temperature of approximately 449 K (176 °C). The calculated critical energy of 243 meV was in a good agreement with the verified experiments if one assumes a short range order of at least 10 ferromagnetic atoms in line (5Fe+5Co) for computation. - Highlights: • Model and theoretical description of the uniaxial anisotropy in ferromagnetic films. • Critical energy and a critical temperature for inducing the uniaxial anisotropy. • Investigation of the activation energy for inducing the uniaxial anisotropy. • Comparison with the model and according to the Neél theory.

Temperature dependence of magnetic anisotropies in ultrathin Fe film on vicinal Si(111)

Energy Technology Data Exchange (ETDEWEB)

Zhang, Yong-Sheng; He, Wei; Ye, Jun; Hu, Bo; Tang, Jin; Zhang, Xiang-Qun [State Key Laboratory of Magnetism and Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China); Cheng, Zhao-Hua, E-mail: zhcheng@aphy.iphy.ac.cn [State Key Laboratory of Magnetism and Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China); School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190 (China)

2017-05-01

The temperature dependence of magnetic anisotropy of ultrathin Fe film with different thickness epitaxially grown on vicinal Si(111) substrate has been quantitatively investigated using the anisotropic magnetoresistance(AMR) measurements. Due to the effect of the vicinal substrate, the magnetic anisotropy is the superposition of a four-fold, a two-fold and a weakly six-fold contribution. It is found that the temperature dependence of the first-order magnetocrystalline anisotropies coefficient follows power laws of the reduced magnetization m(T)(=M(T)/M(0)) being consistent with the Callen and Callen's theory. However the temperature dependence of uniaxial magnetic anisotropy (UMA) shows novel behavior that decreases roughly as a function of temperature with different power law for samples with different thickness. We also found that the six-fold magnetocrystalline anisotropy is almost invariable over a wide temperature range. Possible mechanisms leading to the different exponents are discussed.

Metallic transport and large anomalous Hall effect at room temperature in ferrimagnetic Mn4N epitaxial thin film

International Nuclear Information System (INIS)

Shen, Xi; Shigematsu, Kei; Chikamatsu, Akira; Fukumura, Tomoteru; Hirose, Yasushi; Hasegawa, Tetsuya

2014-01-01

We report the electrical transport properties of ferrimagnetic Mn 4 N (001) epitaxial thin films grown by pulsed laser deposition on MgO (001) substrates. The Mn 4 N thin films were tetragonally distorted with a ratio of out-of-plane to in-plane lattice constants of 0.987 and showed perpendicular magnetic anisotropy with an effective magnetic anisotropy constant of 0.16 MJ/m 3 , which is comparable with that of a recently reported molecular-beam-epitaxy-grown film. The thin films exhibited metallic transport with a room temperature resistivity of 125 μΩ cm in addition to a large anomalous Hall effect with a Hall angle tangent of 0.023.

Comparison of field swept ferromagnetic resonance methods - A case study using Ni-Mn-Sn films

Science.gov (United States)

Modak, R.; Samantaray, B.; Mandal, P.; Srinivasu, V. V.; Srinivasan, A.

2018-05-01

Ferromagnetic resonance spectroscopy is used to understand the magnetic behavior of Ni-Mn-Sn Heusler alloy film. Two popular experimental methods available for recording FMR spectra are presented here. In plane angular (φH) variation of magnetic relaxation is used to evaluate the in plane anisotropy (Ku) of the film. The out of plane (θH) variation of FMR spectra has been numerically analyzed to extract the Gilbert damping coefficient, effective magnetization and perpendicular magnetic anisotropy (K1). Magnetic homogeneity of the film had also been evaluated in terms of 2-magnon contribution from FMR linewidth. The advantage and limitations of these two popular FMR techniques are discussed on the basis of the results obtained in this comparative study.

Metallic transport and large anomalous Hall effect at room temperature in ferrimagnetic Mn{sub 4}N epitaxial thin film

Energy Technology Data Exchange (ETDEWEB)

Shen, Xi; Shigematsu, Kei [Department of Chemistry, The University of Tokyo, Tokyo 113-0033 (Japan); Chikamatsu, Akira, E-mail: chikamatsu@chem.s.u-tokyo.ac.jp; Fukumura, Tomoteru [Department of Chemistry, The University of Tokyo, Tokyo 113-0033 (Japan); CREST, Japan Science and Technology Agency (JST), Tokyo 113-0033 (Japan); Hirose, Yasushi; Hasegawa, Tetsuya [Department of Chemistry, The University of Tokyo, Tokyo 113-0033 (Japan); CREST, Japan Science and Technology Agency (JST), Tokyo 113-0033 (Japan); Kanagawa Academy of Science and Technology (KAST), Kawasaki 213-0012 (Japan)

2014-08-18

We report the electrical transport properties of ferrimagnetic Mn{sub 4}N (001) epitaxial thin films grown by pulsed laser deposition on MgO (001) substrates. The Mn{sub 4}N thin films were tetragonally distorted with a ratio of out-of-plane to in-plane lattice constants of 0.987 and showed perpendicular magnetic anisotropy with an effective magnetic anisotropy constant of 0.16 MJ/m{sup 3}, which is comparable with that of a recently reported molecular-beam-epitaxy-grown film. The thin films exhibited metallic transport with a room temperature resistivity of 125 μΩ cm in addition to a large anomalous Hall effect with a Hall angle tangent of 0.023.

Interplay of uniaxial and cubic anisotropy in epitaxial Fe thin films on MgO (001 substrate

Directory of Open Access Journals (Sweden)

Srijani Mallik

2014-09-01

Full Text Available Epitaxial Fe thin films were grown on annealed MgO(001 substrates at oblique incidence by DC magnetron sputtering. Due to the oblique growth configuration, uniaxial anisotropy was found to be superimposed on the expected four-fold cubic anisotropy. A detailed study of in-plane magnetic hysteresis for Fe on MgO thin films has been performed by Magneto Optic Kerr Effect (MOKE magnetometer. Both single step and double step loops have been observed depending on the angle between the applied field and easy axis i.e. along ⟨100⟩ direction. Domain images during magnetization reversal were captured by Kerr microscope. Domain images clearly evidence two successive and separate 90° domain wall (DW nucleation and motion along cubic easy cum uniaxial easy axis and cubic easy cum uniaxial hard axis, respectively. However, along cubic hard axis two 180° domain wall motion dominate the magnetization reversal process. In spite of having four-fold anisotropy it is essential to explain magnetization reversal mechanism in 0°< ϕ < 90° span as uniaxial anisotropy plays a major role in this system. Also it is shown that substrate rotation can suppress the effect of uniaxial anisotropy superimposed on four-fold anisotropy.

Observation of second spin reorientation transition within ultrathin region in Fe films on Ag(001) surface

International Nuclear Information System (INIS)

Khim, T.-Y.; Shin, M.; Lee, H.; Park, B.-G.; Park, J.-H.

2014-01-01

We acquired direct measurements for in-plane and perpendicular-to-plane magnetic moments of Fe films using an x-ray magnetic circular dichroism technique with increase of the Fe thickness (up to 40 Å) on the Ag(001) surface. Epitaxial Fe/Ag(001) films were grown in situ with the thickness varying from 2 Å to 40 Å, and the magnetic anisotropy was carefully investigated as a function of the film thickness. We found re-entrance of the in-plane magnetic anisotropy of the Fe film in ultrathin region. The results manifest that the epitaxial Fe/Ag(001) film undergoes two distinct spin reorientation transitions from in-plane to out-of-plane at the film thickness t ≈ 9 Å and back to in-plane at t ≈ 18 Å as t increases.

Solvent Annealing Induced Perpendicular Orientation of Cylindrical Microdomains in Polystyrene-b-poly(4-hydroxyl styrene)/PEG Oligomer Blend Thin Film Made by Spin-coating from Selective Solvent

Energy Technology Data Exchange (ETDEWEB)

Matsutani, Taito; Yamamoto, Katsuhiro, E-mail: yamamoto.katsuhiro@nitech.ac.jp [Department of Materials Science and Technology, Graduate School of Engineering, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555 (Japan)

2011-01-01

The microphase separated structure of PS-b-PHS/PEG blend thin film with thickness of 500 {approx} 600 nm was investigated by grazing incidence small angle X-ray scattering. The thin film was obtained by two different solutions; one was THF which was common good solvent for all components of polymers used here. The other is toluene which was selective solvent for PS and poor-solvent for PHS and PEG. The equilibrium morphology of the block copolymer and blend sample was hexagonally packed cylinder in the bulk and thin film. The structure in the thin film obtained by spin cast from toluene solution was non-equilibrium. After THF vopar annealing of the thin film (cast from toluene), the highly ordered and perpendicular oriented cylindrical structure was obtained. Perpendicular orientation was failure when the thin film sample made by spin cast from THF solution and subsequent THF vapor annealing. The perpendicular nano-holes were fabricated after removing PEG oligomer by washing with water.

In-plane current induced domain wall nucleation and its stochasticity in perpendicular magnetic anisotropy Hall cross structures

International Nuclear Information System (INIS)

Sethi, P.; Murapaka, C.; Lim, G. J.; Lew, W. S.

2015-01-01

Hall cross structures in magnetic nanowires are commonly used for electrical detection of magnetization reversal in which a domain wall (DW) is conventionally nucleated by a local Oersted field. In this letter, we demonstrate DW nucleation in Co/Ni perpendicular magnetic anisotropy nanowire at the magnetic Hall cross junction. The DWs are nucleated by applying an in-plane pulsed current through the nanowire without the need of a local Oersted field. The change in Hall resistance, detected using anomalous Hall effect, is governed by the magnetic volume switched at the Hall junction, which can be tuned by varying the magnitude of the applied current density and pulse width. The nucleated DWs are driven simultaneously under the spin transfer torque effect when the applied current density is above a threshold. The possibility of multiple DW generation and variation in magnetic volume switched makes nucleation process stochastic in nature. The in-plane current induced stochastic nature of DW generation may find applications in random number generation

Epitaxial Growth of Hard Ferrimagnetic Mn3Ge Film on Rhodium Buffer Layer

Directory of Open Access Journals (Sweden)

Atsushi Sugihara

2015-06-01

Full Text Available Mn\\(_3\\Ge has a tetragonal Heusler-like D0\\(_{22}\\ crystal structure, exhibiting a large uniaxial magnetic anisotropy and small saturation magnetization due to its ferrimagnetic spin structure; thus, it is a hard ferrimagnet. In this report, epitaxial growth of a Mn\\(_3\\Ge film on a Rh buffer layer was investigated for comparison with that of a film on a Cr buffer layer in terms of the lattice mismatch between Mn\\(_3\\Ge and the buffer layer. The film grown on Rh had much better crystalline quality than that grown on Cr, which can be attributed to the small lattice mismatch. Epitaxial films of Mn\\(_3\\Ge on Rh show somewhat small coercivity (\\(H_{\\rm c}\\ = 12.6 kOe and a large perpendicular magnetic anisotropy (\\(K_{\\rm u}\\ = 11.6 Merg/cm\\(^3\\, comparable to that of the film grown on Cr.

Optical and electro-optic anisotropy of epitaxial PZT thin films

Science.gov (United States)

Zhu, Minmin; Du, Zehui; Jing, Lin; Yoong Tok, Alfred Iing; Tong Teo, Edwin Hang

2015-07-01

Strong optical and electro-optic (EO) anisotropy has been investigated in ferroelectric Pb(Zr0.48Ti0.52)O3 thin films epitaxially grown on Nb-SrTiO3 (001), (011), and (111) substrates using magnetron sputtering. The refractive index, electro-optic, and ferroelectric properties of the samples demonstrate the significant dependence on the growth orientation. The linear electro-optic coefficients of the (001), (011), and (111)-oriented PZT thin films were 270.8, 198.8, and 125.7 pm/V, respectively. Such remarkable anisotropic EO behaviors have been explained according to the structure correlation between the orientation dependent distribution, spontaneous polarization, epitaxial strain, and domain pattern.

Electric-field-control of magnetic anisotropy of Co0.6Fe0.2B0.2/oxide stacks using reduced voltage

Science.gov (United States)

Kita, Koji; Abraham, David W.; Gajek, Martin J.; Worledge, D. C.

2012-08-01

We have demonstrated purely electrical manipulation of the magnetic anisotropy of a Co0.6Fe0.2B0.2 film by applying only 8 V across the CoFeB/oxide stack. A clear transition from in-plane to perpendicular anisotropy was observed. The quantitative relationship between interface anisotropy energy and the applied electric-field was determined from the linear voltage dependence of the saturation field. By comparing the dielectric stacks of MgO/Al2O3 and MgO/HfO2/Al2O3, enhanced voltage control was also demonstrated, due to the higher dielectric constant of the HfO2. These results suggest the feasibility of purely electrical control of magnetization with small voltage bias for spintronics applications.

Domain wall motion in ferromagnetic systems with perpendicular magnetization

International Nuclear Information System (INIS)

Szambolics, H.; Toussaint, J.-Ch.; Marty, A.; Miron, I.M.; Buda-Prejbeanu, L.D.

2009-01-01

Although we lack clear experimental evidence, apparently out-of-plane magnetized systems are better suited for spintronic applications than the in-plane magnetized ones, mainly due to the smaller current densities required for achieving domain wall motion. [Co/Pt] multilayers belong to the first category of materials, the out-of-plane magnetization orientation arising from the strong perpendicular magnetocrystalline anisotropy. If the magnetization arranges itself out-of-plane narrow Bloch walls occur. In the present paper, both field and current-driven domain wall motion have been investigated for this system, using micromagnetic simulations. Three types of geometries have been taken into account: bulk, thin film and wire, and for all of them a full comparison is done between the effect of the applied field and injected current. The reduction of the system's dimension induces the decrease of the critical field and the critical current, but it does not influence the domain wall displacement mechanism.

Magnetism of coherent Co and Ni thin films on Cu(111) and Au(111) substrates: An ab initio study

Energy Technology Data Exchange (ETDEWEB)

Zelený, Martin, E-mail: zeleny@fme.vutbr.cz; Dlouhý, Ivo

2017-02-15

We present an ab initio study of structural and magnetic properties of coherent Co and Ni thin films on Cu(111) and Au(111) substrates with thicknesses of up to 6 monolayers. All studied films on Cu(111) substrates prefer structures close their ground state (hcp for Co and fcc for Ni), whereas only the hcp stacking sequence has been found for both films on Au(111) substrates. All studied films exhibit instability of the first monolayer with respect to decomposition into 2-monolayer- or 3-monolayer-high islands, which is in agreement with experimental findings. All studied films are also ferromagnetic, nevertheless the Ni/Cu(111) films reduce their magnetic moments in the layer adjacent to the substrate due to a stronger Cu–Ni interaction at the interface. The magnetic anisotropy of a Co film does not depend on the film thickness: all the studied Co/Au(111) films exhibit a perpendicular magnetic anisotropy, whereas all the Co/Cu(111) films prefer in-plane magnetization. On the other hand, both Ni films change their preference for in-plane orientation of their easy axis to out-of-plane orientation at a critical thickness of 2 monolayers, however, the magnetic anisotropy energies for films thicker than 1 monolayer are smaller than 1 meV/Ni atom. These behaviors of magnetic anisotropy do not depend on the structure of the studied films. - Highlights: • All films exhibit instability of the first monolayer and prefer grow in islands. • The Cu–Ni interaction is responsible for reduced Ni magnetic moments in Ni/Cu(111) films. • The Co/Au(111) and Co/Cu(111) films show different orientations of magnetic anisotropy. • The Ni films exhibit in-plane magnetization only for single monolayer. • Behaviors of magnetic anisotropy do not depend on the structure of the studied films.

Direct Observation of Field and Temperature Induced Domain Replication in Dipolar Coupled Perpendicular Anisotropy Films

Energy Technology Data Exchange (ETDEWEB)

Hauet, T.; Gunther, C.M.; Pfau, B.; Eisebitt, S.; Fischer, P.; Rick, R. L.; Thiele, J.-U.; Hellwig, O.; Schabes, M.E.

2007-07-01

Dipolar interactions in a soft/Pd/hard [CoNi/Pd]{sub 30}/Pd/[Co/Pd]{sub 20} multilayer system, where a thick Pd layer between two ferromagnetic units prevents direct exchange coupling, are directly revealed by combining magnetometry and state-of-the-art layer resolving soft x-ray imaging techniques with sub-100-nm spatial resolution. The domains forming in the soft layer during external magnetic field reversal are found to match the domains previously trapped in the hard layer. The low Curie temperature of the soft layer allows varying its intrinsic parameters via temperature and thus studying the competition with dipolar fields due to the domains in the hard layer. Micromagnetic simulations elucidate the role of [CoNi/Pd] magnetization, exchange, and anisotropy in the duplication process. Finally, thermally driven domain replication in remanence during temperature cycling is demonstrated.

Anomalous Nernst Effects of [CoSiB/Pt] Multilayer Films

OpenAIRE

Kelekci, O.; Lee, H. N.; Kim, T. W.; Noh, H.

2013-01-01

We report a measurement for the anomalous Nernst effects induced by a temperature gradient in [CoSiB/Pt] multilayer films with perpendicular magnetic anisotropy. The Nernst voltage shows a characteristic hysteresis which reflects the magnetization of the film as in the case of the anomalous Hall effects. With a local heating geometry, we also measure the dependence of the anomalous Nernst voltage on the distance d from the heating element. It is roughly proportional to 1/d^1.3, which can be c...

Elastic anisotropy of polycrystalline Au films: Modeling and respective contributions of X-ray diffraction, nanoindentation and Brillouin light scattering

International Nuclear Information System (INIS)

Faurie, D.; Djemia, P.; Le Bourhis, E.; Renault, P.-O.; Roussigne, Y.; Cherif, S.M.; Brenner, R.; Castelnau, O.; Patriarche, G.; Goudeau, Ph.

2010-01-01

Elastic properties of non-textured and {1 1 1}-fiber-textured gold thin films were investigated experimentally by several complementary techniques, namely in situ tensile testing under X-ray diffraction (XRD), nanoindentation and Brillouin light scattering (BLS). Specimens were probed along different directions to reveal the strong effects of elastic anisotropy at the (local) grain and (global) film scales. XRD allows the investigation of both local and global anisotropies, while BLS and nanoindentation are limited to global analyses. A micromechanical model, based on the self-consistent scheme, and accounting for the actual microstructure of the films, is applied to interpret experimental data. Although different types of elastic constants can be determined with the used experimental techniques (static/dynamic, local/global), a good agreement is obtained, showing that comparison of these techniques is feasible when carried out carefully. In particular, the use of a micromechanical model to estimate the effects of the local elastic anisotropy at the film scale is unavoidable. The presented results show that XRD, BLS and nanoindentation should capture anisotropic texture effects on elastic constants measurements for materials with a Zener anisotropy index larger than 2. Conversely, the actual texture of a given specimen should be taken into account for a proper analysis of elastic constants measurements using those three experimental techniques.

Thickness dependence of magnetic anisotropy and domains in amorphous Co{sub 40}Fe{sub 40}B{sub 20} thin films grown on PET flexible substrates

Energy Technology Data Exchange (ETDEWEB)

Tang, Zhenhua, E-mail: tangzhenhua1988@163.com [Guangdong Provincial Key Laboratory of Functional Soft Condensed Matter, School of Materials and Energy, Guangdong University of Technology, Guangzhou 510006 (China); Department of Physics, The University of Hong Kong, Pokfulam Road, Hong Kong (China); Ni, Hao [Department of Physics, The University of Hong Kong, Pokfulam Road, Hong Kong (China); College of science, China university of petroleum, Qingdao, Shandong 266580 China (China); Lu, Biao [Guangdong Provincial Key Laboratory of Functional Soft Condensed Matter, School of Materials and Energy, Guangdong University of Technology, Guangzhou 510006 (China); Zheng, Ming [Department of Physics, The University of Hong Kong, Pokfulam Road, Hong Kong (China); Huang, Yong-An [Guangdong Provincial Key Laboratory of Functional Soft Condensed Matter, School of Materials and Energy, Guangdong University of Technology, Guangzhou 510006 (China); Lu, Sheng-Guo, E-mail: sglu@gdut.edu.cn [Guangdong Provincial Key Laboratory of Functional Soft Condensed Matter, School of Materials and Energy, Guangdong University of Technology, Guangzhou 510006 (China); Tang, Minghua [Key Laboratory of Low Dimensional Materials and Application Technology, Ministry of Education (Xiangtan University), Xiangtan, Hunan 411105 (China); Gao, Ju [Department of Physics, The University of Hong Kong, Pokfulam Road, Hong Kong (China)

2017-03-15

The amorphous Co{sub 40}Fe{sub 40}B{sub 20} (CoFeB) films (5–200 nm in thickness) were grown on flexible polyethylene terephthalate (PET) substrates using the DC magnetron-sputtering method. The thickness dependence of structural and magnetic properties of flexible CoFeB thin films was investigated in detail. The in-plane uniaxial magnetic anisotropy induced by strain as a function of thickness was obtained in flexible CoFeB thin films, and a critical thickness of ~150 nm for in-plane magnetic anisotropy was observed. Moreover, the domains and the uniaxial anisotropy as a function of angular direction of applied magnetic field were characterized. The results show potential for designing CoFeB-based flexible spintronic devices in which the physical parameters could be tailored by controlling the thickness of the thin film. - Graphical abstract: The in-plane uniaxial magnetic anisotropy induced by strain as a function of thickness was obtained in flexible CoFeB thin films, and a critical thickness of ~150 nm for in-plane magnetic anisotropy was observed. Moreover, the domains and the uniaxial anisotropy as a function of angular direction of applied magnetic field were characterized. - Highlights: • The thickness effect on the magnetic properties in amorphous CoFeB thin films grown on flexible substrates was investigated. • The in-plane uniaxial magnetic anisotropy induced by strains was observed. • A critical thickness of ~ 150 nm for the flexible CoFeB thin film on PET substrate was obtained.

AFM, XRD and HRTEM Studies of Annealed FePd Thin Films

International Nuclear Information System (INIS)

Perzanowski, M.; Zabila, Y.; Polit, A.; Krupinski, M.; Dobrowolska, A.; Marszalek, M.; Morgiel, J.

2010-01-01

Ferromagnetic FePd L1 0 ordered alloys are highly expected as forthcoming high-density recording materials, because they reveal a large perpendicular magnetocrystalline anisotropy. The value of the magnetic anisotropy of FePd alloy strongly depends on the alloy composition, degree of alloy order as well as on the crystallographic grain orientation. In particular, to obtain the perpendicular anisotropy, it is necessary to get the films with (001) texture. One of the successful methods, which allows one to obtain highly ordered alloy, is a subsequent deposition of Fe and Pd layers, followed by an annealing at high temperature. This paper presents the study of the FePd thin alloy film structure changing in the result of high temperature annealing. During the annealing in high vacuum, the measurements of electrical resistance were performed, indicating the regions of different structure evolution. Changes in the crystal structure and surface morphology induced by thermal treatment were investigated by X-ray diffraction, atomic force microscopy, as well as high resolution transmission electron microscopy and then compared with electrical resistivity measurement. The slow thermal annealing of the deposited layers leads to the formation of L1 0 ordered FePd alloy with preferred (111) grain orientation. After the annealing at the highest used temperature, the dewetting process was observed, resulting in a creation of well oriented, regular nanoparticles. (author)

Through-plane uniformity of optical anisotropy in spin-coated biphenyl dianhydride-p-phenylenediamine films

International Nuclear Information System (INIS)

Diao Jie; Hess, Dennis W.

2005-01-01

The uniformity of the average refractive index and birefringence of poly-(biphenyl dianhydride-p-phenylenediamine) (BPDA-PDA) films has been investigated experimentally as a function of film thickness. Spin-cast and cured BPDA-PDA films were thinned sequentially by reactive ion etching and the dependence of average refractive index and birefringence on the post-thinned film thickness was determined using a prism wave-guide coupler. Negligible changes in the average refractive index and the birefringence were observed as a result of the thinning process. These results confirm previous assumptions that assert uniform optical anisotropy in the through-plane direction for spin-cast BPDA-PDA films

Ta thickness-dependent perpendicular magnetic anisotropy features in Ta/CoFeB/MgO/W free layer stacks

Energy Technology Data Exchange (ETDEWEB)

Yang, SeungMo; Lee, JaBin; An, GwangGuk [Novel Functional Materials and Devices Lab, The Research Institute for Natural Science, Department of Physics, Hanyang University, Seoul 133-791 (Korea, Republic of); Kim, JaeHong [Division of Nano-Scale Semiconductor Engineering, Hanyang University, Seoul 133-791 (Korea, Republic of); Chung, WooSeong [Nano Quantum Electronics Lab, Department of Electronics and Computer Engineering, Hanyang University, Seoul 133-791 (Korea, Republic of); Hong, JinPyo, E-mail: jphong@hanyang.ac.kr [Novel Functional Materials and Devices Lab, The Research Institute for Natural Science, Department of Physics, Hanyang University, Seoul 133-791 (Korea, Republic of); Division of Nano-Scale Semiconductor Engineering, Hanyang University, Seoul 133-791 (Korea, Republic of)

2015-07-31

We describe Ta underlayer thickness influence on thermal stability of perpendicular magnetic anisotropy in Ta/CoFeB/MgO/W stacks. It is believed that thermal stability based on Ta underlay is associated with thermally-activated Ta atom diffusion during annealing. The difference in Ta thickness-dependent diffusion behaviors was confirmed with X-ray photoelectron spectroscopy analysis. Along with a feasible Ta thickness model, our observations suggest that an appropriate seed layer choice is needed for high temperature annealing stability, a critical issue in the memory industry. - Highlights: • We observed changes in the diffusion behavior with regard to Ta seed layer thickness. • It was observed that a thinner Ta seed layer induced more annealing-stable features. • However, ultra-thin (0.75 nm) Ta shows unstable characteristics about the annealing process. • It was possibly due to a rugged interface of the Ta layer by the island growth process.

A magneto-optic technique for studying magnetization reversal processes and anisotropies applied to Co/Cu/Co trilayer structures

Science.gov (United States)

Daboo, C.; Bland, J. A. C.; Hicken, R. J.; Ives, A. J. R.; Baird, M. J.; Walker, M. J.

1993-05-01

We report the magnetization reversal and magnetic anisotropy behavior of ultrathin Co/Cu(111)/Co (dCu=20 and 27 Å) trilayer structures prepared by MBE on a 500-Å Ge/GaAs(110) epilayer. We describe an arrangement in which the magnetization components parallel and perpendicular to the applied field are both determined from longitudinal MOKE measurements. For the samples examined, coherent rotation of the magnetization vector is observed when the magnetic field is applied along the hard in-plane anisotropy axis, with the magnitude of the magnetization vector constant and close to its bulk value. Results of micromagnetic calculations closely reproduce the observed parallel and perpendicular magnetization loops, and yield strong uniaxial magnetic anisotropies in both layers while the interlayer coupling appears to be absent or negligible in comparison with the anisotropy strengths. An absence of antiferromagnetic (AF) coupling has been observed previously [W. F. Egelhoff, Jr. and M. T. Kief, Phys. Rev. B 45, 7795 (1992)] in contrast to recent results, indicating that AF coupling [M. T. Johnson et al., Phys. Rev. Lett. 69, 969 (1992)] and GMR [D. Grieg et al., J. Magn. Magn. Mater. 110, L239 (1992)] can occur in Co/Cu(111)/Co structures grown by MBE, but these properties are sensitively dependent on growth conditions. The absence of coupling in our samples is attributed to the presence of a significant interface roughness induced by the Ge epilayer. The uniaxial anisotropies are assumed to arise from strain or defects induced in the film.

Magnetic Phase Transition in Ion-Irradiated Ultrathin CoN Films via Magneto-Optic Faraday Effect.

Science.gov (United States)

Su, Chiung-Wu; Chang, Yen-Chu; Chang, Sheng-Chi

2013-11-15

The magnetic properties of 1 nm thick in-plane anisotropic Co ultrathin film on ZnO(0001) were investigated through successive 500 eV nitrogen-ion sputtering. Magneto-optical Faraday effects were used to observe the evolution of the ion-irradiated sample in longitudinal and perpendicular magnetic fields. The ferromagnetic phase of the initial in-plane anisotropic fcc β-Co phase transformation to β-Co(N) phase was terminated at paramagnetic CoN x phase. In-plane anisotropy with weak out-of-plane anisotropy of the Co/ZnO sample was initially observed in the as-grown condition. In the sputtering process, the N⁺ ions induced simultaneous sputtering and doping. An abrupt spin reorientation behavior from in-plane to out-of-plane was found under prolonged sputtering condition. The existence of perpendicular anisotropy measured from the out-of-plane Faraday effect may be attributed to the co-existence of residual β-Co and Co₄N exchange bonding force by the gradual depletion of Co-N thickness.

Thickness and angular dependent magnetic anisotropy of La0.67Sr0.33MnO3 thin films by Vectorial Magneto Optical Kerr Magnetometry

Science.gov (United States)

Chaluvadi, S. K.; Perna, P.; Ajejas, F.; Camarero, J.; Pautrat, A.; Flament, S.; Méchin, L.

2017-10-01

We investigate the in-plane magnetic anisotropy in La0.67Sr0.33MnO3 thin films grown on SrTiO3 (001) substrate using angular dependent room temperature Vectorial Magneto-Optical Kerr Magnetometry. The experimental data reveals that the magnetic anisotropy symmetry landscape significantly changes depending upon the strain and thickness. At low film thickness (12 and 25 nm) the dominant uniaxial anisotropy is due to interface effects, step edges due to mis-cut angle of SrTiO3 substrate. At intermediate thickness, the magnetic anisotropy presents a competition between magnetocrystalline (biaxial) and substrate step induced (uniaxial) anisotropy. Depending upon their relative strengths, a profound biaxial or uniaxial or mixed anisotropy is favoured. Above the critical thickness, magnetocrystalline anisotropy dominates all other effects and shows a biaxial anisotropy.

Effect of defects, magnetocrystalline anisotropy, and shape anisotropy on magnetic structure of iron thin films by magnetic force microscopy

Directory of Open Access Journals (Sweden)

Ke Xu

2017-05-01

Full Text Available Microstructures of magnetic materials, including defects and crystallographic orientations, are known to strongly influence magnetic domain structures. Measurement techniques such as magnetic force microscopy (MFM thus allow study of correlations between microstructural and magnetic properties. The present work probes effects of anisotropy and artificial defects on the evolution of domain structure with applied field. Single crystal iron thin films on MgO substrates were milled by Focused Ion Beam (FIB to create different magnetically isolated squares and rectangles in [110] crystallographic orientations, having their easy axis 45° from the sample edge. To investigate domain wall response on encountering non-magnetic defects, a 150 nm diameter hole was created in the center of some samples. By simultaneously varying crystal orientation and shape, both magnetocrystalline anisotropy and shape anisotropy, as well as their interaction, could be studied. Shape anisotropy was found to be important primarily for the longer edge of rectangular samples, which exaggerated the FIB edge effects and provided nucleation sites for spike domains in non-easy axis oriented samples. Center holes acted as pinning sites for domain walls until large applied magnetic fields. The present studies are aimed at deepening the understanding of the propagation of different types of domain walls in the presence of defects and different crystal orientations.

Discoveries that guided the beginning of perpendicular magnetic recording

International Nuclear Information System (INIS)

Iwasaki, S.

2001-01-01

The speculations and discoveries that guided the beginning of perpendicular magnetic recording, which have never been systematically discussed before, are described in this paper. Especially, four important discoveries of perpendicular magnetization, Co-Cr film, effect of double layered medium, and complementarity law are described in detail. The studies on thin film media and recording mechanisms at short wavelengths aiming at the advancement of longitudinal magnetic recording in the 1960's lead to the realization of the new perpendicular magnetic recording through these discoveries. None of these works was on any list of research targets in the 1960's. The study of perpendicular magnetic recording has taught us that research should proceed systematically with definite targets and that it is important to have an attitude not to neglect phenomena that are different from the common sense at the time

Controlling growth rate anisotropy for formation of continuous ZnO thin films from seeded substrates

International Nuclear Information System (INIS)

Zhang, R H; Slamovich, E B; Handwerker, C A

2013-01-01

Solution-processed zinc oxide (ZnO) thin films are promising candidates for low-temperature-processable active layers in transparent thin film electronics. In this study, control of growth rate anisotropy using ZnO nanoparticle seeds, capping ions, and pH adjustment leads to a low-temperature (90 ° C) hydrothermal process for transparent and high-density ZnO thin films. The common 1D ZnO nanorod array was grown into a 2D continuous polycrystalline film using a short-time pure solution method. Growth rate anisotropy of ZnO crystals and the film morphology were tuned by varying the chloride (Cl − ) ion concentration and the initial pH of solutions of zinc nitrate and hexamethylenetetramine (HMTA), and the competitive adsorption effects of Cl − ions and HMTA ligands on the anisotropic growth behavior of ZnO crystals were proposed. The lateral growth of nanorods constituting the film was promoted by lowering the solution pH to accelerate the hydrolysis of HMTA, thereby allowing the adsorption effects from Cl − to dominate. By optimizing the growth conditions, a dense ∼100 nm thickness film was fabricated in 15 min from a solution of [Cl − ]/[Zn 2+ ] = 1.5 and pH= 4.8 ± 0.1. This film shows >80% optical transmittance and a field-effect mobility of 2.730 cm 2 V −1 s −1 at zero back-gate bias. (paper)

Thickness dependence of magnetization reversal mechanism in perpendicularly magnetized L1{sub 0} FePt films

Energy Technology Data Exchange (ETDEWEB)

Bi, Mei; Wang, Xin, E-mail: xinwang@uestc.edu.cn; Lu, Haipeng; Zhang, Li; Deng, Longjiang; Xie, Jianliang

2017-04-15

We have studied the magnetic switching behavior of L1{sub 0}-ordered FePt films with varying thickness. It was found that coercivity is strongly dependent on the film thickness. The obvious variations of the coercivity in the thin films are confirmed by the measurements of structural and magnetic properties. With increasing thickness, the degree of L1{sub 0} chemical ordering increased, while the magnetization reversal process transforms from a pinned two-steps magnetization reversal to a comparatively smooth domain wall motion behavior. Although considering anisotropy, exchange interaction and applied magnetic field, the switching behavior in films is quite complex, the main features of the magnetization reversal mechanism can be understood by performing detailed investigation on the effect of the deposition temperature and the angle of magnetic field. - Highlights: • Series of FePt films with L1{sub 0} phase have been prepared. • We focused on the magnetization reversal mechanism with varying thicknesses. • The angle-dependence of switching process is revealed in the FePt films. • Different switching mechanisms were found by increasing the film thickness.

Study of the magnetic anisotropy in Ni/Cu and Ni/glass thin films

International Nuclear Information System (INIS)

Cherif, S.-M.; Layadi, A.; Ben Youssef, J.; Nacereddine, C.; Roussigne, Y.

2007-01-01

The magnetic properties of evaporated Ni/Cu and Ni/glass thin films have been investigated by means of the vibrating sample magnetometer (VSM), the Brillouin light scattering (BLS) and magnetic force microscopy (MFM). The Ni thickness, t, ranges from 31 to 165 nm. The second- and fourth-order magnetic anisotropy constants, K 1 and K 2 , have been included; for the Ni/Cu series, K 1 was found to decrease from 1.0x10 6 to 0.18x10 6 erg/cm 3 as t increases from 31 to 165 nm, while K 2 increased from 0.24x10 6 to 0.8x10 6 erg/cm 3 . Over all the thickness range, the magnetization easy axis is in plane. For thinner films, there is a good agreement between anisotropy constant values inferred from VSM and BLS. Stripe domains were observed for t≥165 nm in Ni/glass and t≥90 nm in Ni/Cu

Non-monotonic probability of thermal reversal in thin-film biaxial nanomagnets with small energy barriers

Directory of Open Access Journals (Sweden)

N. Kani

2017-05-01

Full Text Available The goal of this paper is to investigate the short time-scale, thermally-induced probability of magnetization reversal for an biaxial nanomagnet that is characterized with a biaxial magnetic anisotropy. For the first time, we clearly show that for a given energy barrier of the nanomagnet, the magnetization reversal probability of an biaxial nanomagnet exhibits a non-monotonic dependence on its saturation magnetization. Specifically, there are two reasons for this non-monotonic behavior in rectangular thin-film nanomagnets that have a large perpendicular magnetic anisotropy. First, a large perpendicular anisotropy lowers the precessional period of the magnetization making it more likely to precess across the x^=0 plane if the magnetization energy exceeds the energy barrier. Second, the thermal-field torque at a particular energy increases as the magnitude of the perpendicular anisotropy increases during the magnetization precession. This non-monotonic behavior is most noticeable when analyzing the magnetization reversals on time-scales up to several tens of ns. In light of the several proposals of spintronic devices that require data retention on time-scales up to 10’s of ns, understanding the probability of magnetization reversal on the short time-scales is important. As such, the results presented in this paper will be helpful in quantifying the reliability and noise sensitivity of spintronic devices in which thermal noise is inevitably present.

The effect of the MgO buffer layer thickness on magnetic anisotropy in MgO/Fe/Cr/MgO buffer/MgO(001)

Energy Technology Data Exchange (ETDEWEB)

Kozioł-Rachwał, Anna, E-mail: a.koziolrachwal@aist.go.jp [National Institute of Advanced Industrial Science and Technology, Spintronics Research Center, Tsukuba, Ibaraki 305-8568 (Japan); AGH University of Science and Technology, Faculty of Physics and Applied Computer Science, al. Mickiewicza 30, 30-059 Kraków (Poland); Nozaki, Takayuki; Zayets, Vadym; Kubota, Hitoshi; Fukushima, Akio; Yuasa, Shinji [National Institute of Advanced Industrial Science and Technology, Spintronics Research Center, Tsukuba, Ibaraki 305-8568 (Japan); Suzuki, Yoshishige [National Institute of Advanced Industrial Science and Technology, Spintronics Research Center, Tsukuba, Ibaraki 305-8568 (Japan); Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama, Toyonaka, Osaka 560-8531 (Japan)

2016-08-28

The relationship between the magnetic properties and MgO buffer layer thickness d was studied in epitaxial MgO/Fe(t)/Cr/MgO(d) layers grown on MgO(001) substrate in which the Fe thickness t ranged from 0.4 nm to 1.1 nm. For 0.4 nm ≤ t ≤ 0.7 nm, a non-monotonic coercivity dependence on the MgO buffer thickness was shown by perpendicular magneto-optic Kerr effect magnetometry. For thicker Fe films, an increase in the buffer layer thickness resulted in a spin reorientation transition from perpendicular to the in-plane magnetization direction. Possible origins of these unusual behaviors were discussed in terms of the suppression of carbon contamination at the Fe surface and changes in the magnetoelastic anisotropy in the system. These results illustrate a method to control magnetic anisotropy in MgO/Fe/Cr/MgO(d) via an appropriate choice of MgO buffer layer thickness d.

Termination layer compensated tunnelling magnetoresistance in ferrimagnetic Heusler compounds with high perpendicular magnetic anisotropy.

Science.gov (United States)

Jeong, Jaewoo; Ferrante, Yari; Faleev, Sergey V; Samant, Mahesh G; Felser, Claudia; Parkin, Stuart S P

2016-01-18

Although high-tunnelling spin polarization has been observed in soft, ferromagnetic, and predicted for hard, ferrimagnetic Heusler materials, there has been no experimental observation to date of high-tunnelling magnetoresistance in the latter. Here we report the preparation of highly textured, polycrystalline Mn3Ge films on amorphous substrates, with very high magnetic anisotropy fields exceeding 7 T, making them technologically relevant. However, the small and negative tunnelling magnetoresistance that we find is attributed to predominant tunnelling from the lower moment Mn-Ge termination layers that are oppositely magnetized to the higher moment Mn-Mn layers. The net spin polarization of the current reflects the different proportions of the two distinct termination layers and their associated tunnelling matrix elements that result from inevitable atomic scale roughness. We show that by engineering the spin polarization of the two termination layers to be of the same sign, even though these layers are oppositely magnetized, high-tunnelling magnetoresistance is possible.

Large anisotropy in colossal magnetoresistance of charge orbital ordered epitaxial Sm(0.5)Ca(0.5)MnO(3) films.

Science.gov (United States)

Chen, Y Z; Sun, J R; Zhao, J L; Wang, J; Shen, B G; Pryds, N

2009-11-04

We investigated the structure and magnetotransport properties of Sm(0.5)Ca(0.5)MnO(3) (SCMO) films epitaxially grown on (011)-oriented SrTiO(3) substrates, which exhibited clear charge/orbital ordering transition. A significant anisotropy of ∼1000 in the colossal magnetoresistance (CMR) effect was observed in the films with a thickness between 50 and 80 nm, which was distinctly different from the basically isotropic CMR effect in bulk SCMO. The large anisotropy in the CMR can be ascribed to the intrinsic asymmetric strain in the film, which plays an important role in tuning the spin-orbit coupling in manganite films. The origin of the peculiar CMR effect is discussed.

Characterization of the magnetic anisotropy in thin films of La1-xSrxMnO3 using the planar Hall effect

International Nuclear Information System (INIS)

Bason, Y.; Klein, L.; Yau, J.B.; Hong, X.; Ahn, C.H.

2004-01-01

Thin films of the colossal magnetoresistance material La 1-x Sr x MnO 3 (LSMO) grown on SrTiO 3 substrates exhibit bi-axial magnetocrystalline anisotropy with easy axes along the [110] and [1 anti 1 0] directions. We have recently discovered that the intrinsic biaxial magnetic anisotropy combined with a giant planar Hall effect lead to striking switching behavior in the transverse resistivity of LSMO films (Appl. Phys. Lett. 84, 2593 (2004)). Here we use this phenomenon as a sensitive tool for measuring in-plane magnetization in order to characterize the magnetic anisotropy. (Abstract Copyright [2004], Wiley Periodicals, Inc.)

Influence of the interface on the magnetic properties of NiZn ferrite thin films treated by proton irradiation

Energy Technology Data Exchange (ETDEWEB)

Jiang, X.D. [Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou 730000 (China); Key Laboratory for Magnetism and Magnetic Materials of the Ministry of Education, Lanzhou University, Lanzhou 730000 (China); Guo, D.W. [Key Laboratory for Magnetism and Magnetic Materials of the Ministry of Education, Lanzhou University, Lanzhou 730000 (China); Zhang, C.H., E-mail: c.h.zhang@impcas.ac.cn [Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou 730000 (China); Fan, X.L.; Chai, G.Z. [Key Laboratory for Magnetism and Magnetic Materials of the Ministry of Education, Lanzhou University, Lanzhou 730000 (China); Xue, D.S., E-mail: xueds@lzu.edu.cn [Key Laboratory for Magnetism and Magnetic Materials of the Ministry of Education, Lanzhou University, Lanzhou 730000 (China)

2015-09-01

In order to systematically investigate the influence of the interface on the magnetic properties, polycrystalline NiZn ferrite thin films were irradiated with 60 keV proton in the dose range from 5 × 10{sup 12} to 5 × 10{sup 16} ions/cm{sup 2}. A non-destructive approach by proton irradiation was found to finely adjust the magnetic properties of polycrystalline NiZn ferrite thin films such as coercivity, perpendicular magnetic anisotropy as well as the effective g value. The coercivity is about 725 Oe for high proton dose ferrite, which is twice larger than the unirradiated one. The ferromagnetic resonance measurements indicated that perpendicular magnetic anisotropy and the effective g value increase with the irradiation dose. Our finding indicates that all modifications of these magnetic properties were associated with the change of interface due to the diffusion and the stress induced by proton irradiation. The change of the effective g value is a result of lattice expansion and the decrease of the magnetic dipole interaction between the columnar grains. This work provides a feasible way to tailor the magnetic properties of thin films by ion irradiation and promotes investigations for the stability of magnetic thin film devices in space or unclear radiation environments.

Antiferromagnetic iridium-manganese intermediate layers for perpendicular recording media (invited)

Science.gov (United States)

Srinivasan, Kumar; Piramanayagam, S. N.; Sbiaa, Rachid; Kay, Yew Seng; Tan, Hang Khume; Wong, Seng Kai

2009-04-01

Current generation of cobalt-oxide-based perpendicular magnetic recording media uses single or dual ruthenium intermediate layers in order to grow crystallographically textured, and magnetically isolated granular media. In this work, the potential advantages of an antiferromagnetic iridium-manganese intermediate layer directly under the recording layer are highlighted. Owing to its close lattice matching with hexagonal cobalt, iridium-manganese which has the L12, or AuCu3-type crystal structure, can support the heteroepitaxial growth of the cobalt-based recording layer. In one of the media schemes described here, (111) textured iridium-manganese thin film was grown on 7.5 nm thick ruthenium layer. On the iridium-manganese as segregation layer, the Co-oxide-based magnetic recording layer showed perpendicular texture with Δθ50 below 4°, coercivity of over 4000 Oe alongside magnetic exchange decoupling, average grain sizes of 6 nm with distributions under 14%, and improved thermal stability. Measurements of the anisotropy constant did not show any significant change and even an IrMn capping layer was observed to improve the thermal stability. The possible mechanisms through which the IrMn layer could affect the thermal stability are hypothesized. The initial layers of the magnetic recording layer on IrMn segregation layers also showed exchange-decoupled and segregated grains, which is unlike that observed on Ru segregation layers. In a second media scheme, (111) textured iridium-manganese thin film was grown on a crystalline soft magnetic underlayer belonging on top of amorphous soft underlayers. In this scheme, partial pinning of the soft underlayer due to exchange-bias interaction with the IrMn layer was observed. This scheme offers the possibility to reduce the intermediate layer thickness, thus improve media writability, and with further optimization, could potentially facilitate the approach toward 1 Tbits/in.2.

Speeding up nanomagnetic logic by DMI enhanced Pt/Co/Ir films

Science.gov (United States)

Ziemys, Grazvydas; Ahrens, Valentin; Mendisch, Simon; Csaba, Gyorgy; Becherer, Markus

2018-05-01

We investigated a new type of multilayer film for Nanomagnetic Logic with perpendicular anisotropy (pNML) enhanced by the Dzyaloshinskii-Moriya interaction (DMI). The DMI effect provides an additional energy term and widens the design space for pNML film optimization. In this work we added an Ir layer between Co and Pt to our standard pNML multilayer (ML) film stack - [Co/Pt]x4. Multilayer stacks of films with and w/o Ir were sputtered and patterned to nanowires of 400 nm width by means of focused ion beam lithography (FIB). For comparability of the films they were tuned to show identical anisotropy for multilayer stacks with and w/o Ir. The field-driven domain wall (DW) velocity in the nanowires was measured by using wide-field MOKE microscopy. We found a strong impact of Ir on the DW velocity being up to 2 times higher compared to the standard [Co/Pt]x4 ML films. Moreover, the maximum velocity is reached at much lower magnetic field, which is beneficial for pNML operation. These results pave the way for pNML with higher clocking rates and at the same time allow a further reduce power consumption.

Bidirectional recording performance of a perpendicular evaporated Co-CoO tape

Energy Technology Data Exchange (ETDEWEB)

Motohashi, K. [Sony Corporation, 3-4-1 Sakuragi, Tagajo-shi, Miyagi 985-0842 (Japan)], E-mail: Kazunari.Motohashi@jp.sony.com; Ikeda, N.; Sato, T.; Shiga, D.; Ono, H.; Onodera, S. [Sony Corporation, 3-4-1 Sakuragi, Tagajo-shi, Miyagi 985-0842 (Japan)

2008-11-15

It is the first report on the recording performance of a perpendicular metal evaporated (ME) tape measured with a giant magnetoresistive head. To solve the application difficulty of oblique evaporated tape media to linear scan tape systems, a perpendicular evaporated Co-CoO tape was proposed instead. The prepared sample showed perpendicular anisotropy with coercivity of 107.3 kA/m, M{sub r}t of 3.9 mA and squareness of 0.25. Identical recording characteristics were obtained for both head-media moving directions, which enables the application of perpendicular evaporated Co-CoO tape to linear scan tape systems. The better carrier-to-noise ratio was also confirmed by comparison with a current advanced product of metal particulate tape, which can realize the higher recording density of linear scan tape systems using ME tape.

Bidirectional recording performance of a perpendicular evaporated Co-CoO tape

International Nuclear Information System (INIS)

Motohashi, K.; Ikeda, N.; Sato, T.; Shiga, D.; Ono, H.; Onodera, S.

2008-01-01

It is the first report on the recording performance of a perpendicular metal evaporated (ME) tape measured with a giant magnetoresistive head. To solve the application difficulty of oblique evaporated tape media to linear scan tape systems, a perpendicular evaporated Co-CoO tape was proposed instead. The prepared sample showed perpendicular anisotropy with coercivity of 107.3 kA/m, M r t of 3.9 mA and squareness of 0.25. Identical recording characteristics were obtained for both head-media moving directions, which enables the application of perpendicular evaporated Co-CoO tape to linear scan tape systems. The better carrier-to-noise ratio was also confirmed by comparison with a current advanced product of metal particulate tape, which can realize the higher recording density of linear scan tape systems using ME tape

The correlation between mechanical stress and magnetic anisotropy in ultrathin films

International Nuclear Information System (INIS)

Sander, D.

1999-01-01

The impact of stress-driven structural transitions and of film strain on the magnetic properties of nm ferromagnetic films is discussed. The stress-induced bending of film-substrate composites is analysed to derive information on film stress due to lattice mismatch or due to surface-stress effects. The magneto-elastic coupling in epitaxial films is determined directly from the magnetostrictive bending of the substrate. The combination of stress measurements with magnetic investigations by the magneto-optical Kerr effect (MOKE) reveals the modification of the magnetic anisotropy by film stress. Stress-strain relations are derived for various epitaxial orientations to facilitate the analysis of the substrate curvature. Biaxial film stress and magneto-elastic coupling coefficients are measured in epitaxial Fe films in situ on W single-crystal substrates. Tremendous film stress of more than 10 GPa is measured in pseudomorphic Fe layers, and the important role of film stress as a driving force for the formation of misfit distortions and for inducing changes of the growth mode in monolayer thin films is presented. The direct measurement of the magneto-elastic coupling in epitaxial films proves that the magnitude and sign of the magneto-elastic coupling deviate from the respective bulk value. Even a small film strain of order 0.1% is found to induce a significant change of the effective magneto-elastic coupling coefficient. This peculiar behaviour is ascribed to a second-order strain dependence of the magneto-elastic energy density, in contrast to the linear strain dependence that is valid for bulk samples. (author)

Evidence of thermal transport anisotropy in stable glasses of vapor deposited organic molecules

Science.gov (United States)

Ràfols-Ribé, Joan; Dettori, Riccardo; Ferrando-Villalba, Pablo; Gonzalez-Silveira, Marta; Abad, Llibertat; Lopeandía, Aitor F.; Colombo, Luciano; Rodríguez-Viejo, Javier

2018-03-01

Vapor deposited organic glasses are currently in use in many optoelectronic devices. Their operation temperature is limited by the glass transition temperature of the organic layers and thermal management strategies become increasingly important to improve the lifetime of the device. Here we report the unusual finding that molecular orientation heavily influences heat flow propagation in glassy films of small molecule organic semiconductors. The thermal conductivity of vapor deposited thin-film semiconductor glasses is anisotropic and controlled by the deposition temperature. We compare our data with extensive molecular dynamics simulations to disentangle the role of density and molecular orientation on heat propagation. Simulations do support the view that thermal transport along the backbone of the organic molecule is strongly preferred with respect to the perpendicular direction. This is due to the anisotropy of the molecular interaction strength that limits the transport of atomic vibrations. This approach could be used in future developments to implement small molecule glassy films in thermoelectric or other organic electronic devices.

The temperature dependence of magnetic anisotropy of Nd-Fe-B thin films

Science.gov (United States)

Sato, Takuya; Hashimoto, Ryuji; Tanaka, Yoshitomo; Suzuki, Kenichi; Enokido, Yasushi; Choi, Kyung-Ku; Suzuki, Takao

2018-05-01

The magnetic properties of Nd-Fe-B thin films with the three different compositions (#1: Nd12.6Fe81.5B5.9, #2: Nd14.6Fe78.1B7.4 and #3: Nd22.6Fe66.2B11.2) are discussed. With increasing Nd content, the c-axis orientation along the film normal is enhanced. It is found that sample #2 possesses the saturation magnetization Ms very close to that for Nd2Fe14B over a temperature range from 100 to about 300K. The magnetic anisotropy constant Ku2 for sample #2 is the highest among those samples, but smaller by about 20%, as compared to that for Nd2Fe14B. It is of interest to note that the temperature TR at which Ku1 changes its sign is lower by about 30K as compared to that previously reported for Nd2Fe14B. The reason for this discrepancy is not clear, but could be due to the presence of the minority phases of Nd-rich compounds and also a possible contribution of the magneto-elastic effect to the net magnetic anisotropy.

The stochastic nature of the domain wall motion along high perpendicular anisotropy strips with surface roughness

International Nuclear Information System (INIS)

Martinez, Eduardo

2012-01-01

The domain wall dynamics along thin ferromagnetic strips with high perpendicular magnetocrystalline anisotropy driven by either magnetic fields or spin-polarized currents is theoretically analyzed by means of full micromagnetic simulations and a one-dimensional model, including both surface roughness and thermal effects. At finite temperature, the results show a field dependence of the domain wall velocity in good qualitative agreement with available experimental measurements, indicating a low field, low velocity creep regime, and a high field, linear regime separated by a smeared depinning region. Similar behaviors were also observed under applied currents. In the low current creep regime the velocity-current characteristic does not depend significantly on the non-adiabaticity. At high currents, where the domain wall velocity becomes insensitive to surface pinning, the domain wall shows a precessional behavior even when the non-adiabatic parameter is equal to the Gilbert damping. These analyses confirm the relevance of both thermal fluctuations and surface roughness for the domain wall dynamics, and that complete micromagnetic modeling and one-dimensional studies taking into account these effects are required to interpret the experimental measurements in order to get a better understanding of the origin, the role and the magnitude of the non-adiabaticity. (paper)

Effect of Grafting Density of Random Copolymer Brushes on Perpendicular Alignment in PS-b-PMMA Thin Films

KAUST Repository

Lee, Wooseop; Park, Sungmin; Kim, Yeongsik; Sethuraman, Vaidyanathan; Rebello, Nathan; Ganesan, Venkat; Ryu, Du Yeol

2017-01-01

We modulated the grafting density (σ) of a random copolymer brush of poly(styrene-r-methyl methacrylate) on substrates to probe its effect on the formation of perpendicularly aligned lamellae of polystyrene-b-poly(methyl methacrylate) (PS-b-PMMA). Supported by coarse-grained simulation results, we hypothesized that an increase in σ will allow us to systematically tune the block copolymer interfacial interactions with the substrates from being preferential to one of the blocks to being neutral toward both blocks and will thereby facilitate enhanced regimes of perpendicularly aligned lamellae. We verified such a hypothesis by using a simple grafting-to approach to modify the substrates and characterized the thickness window for perpendicular lamellae as a function of brush thickness (or σ) on the grafted substrates using scanning force microscopy (SFM) images and grazing incidence small-angle X-ray scattering (GISAXS) measurements. The experimental results validated our hypothesis and suggested that the σ of random copolymer brushes can be used as an additional versatile parameter to modulate the interfacial interactions and the resulting alignment of block copolymer films.

Effect of Grafting Density of Random Copolymer Brushes on Perpendicular Alignment in PS-b-PMMA Thin Films

KAUST Repository

Lee, Wooseop

2017-07-18

We modulated the grafting density (σ) of a random copolymer brush of poly(styrene-r-methyl methacrylate) on substrates to probe its effect on the formation of perpendicularly aligned lamellae of polystyrene-b-poly(methyl methacrylate) (PS-b-PMMA). Supported by coarse-grained simulation results, we hypothesized that an increase in σ will allow us to systematically tune the block copolymer interfacial interactions with the substrates from being preferential to one of the blocks to being neutral toward both blocks and will thereby facilitate enhanced regimes of perpendicularly aligned lamellae. We verified such a hypothesis by using a simple grafting-to approach to modify the substrates and characterized the thickness window for perpendicular lamellae as a function of brush thickness (or σ) on the grafted substrates using scanning force microscopy (SFM) images and grazing incidence small-angle X-ray scattering (GISAXS) measurements. The experimental results validated our hypothesis and suggested that the σ of random copolymer brushes can be used as an additional versatile parameter to modulate the interfacial interactions and the resulting alignment of block copolymer films.

Study of the magnetic anisotropy in Ni/Cu and Ni/glass thin films

Energy Technology Data Exchange (ETDEWEB)

Cherif, S.-M. [Laboratoire PMTM, Institut Galilee, Univeriste Paris 13, Villetaneuse, 93340 (France); Layadi, A. [Departement de Physique, Universite Ferhat Abbas, Setif 19000 (Algeria)]. E-mail: a_layadi@yahoo.fr; Ben Youssef, J. [Laboratoire de Magnetisme de Bretagne, U.B.O., Brest 29238 (France); Nacereddine, C. [Departement de Physique, Universite Ferhat Abbas, Setif 19000 (Algeria); Roussigne, Y. [Laboratoire PMTM, Institut Galilee, Univeriste Paris 13, Villetaneuse, 93340 (France)

2007-01-01

The magnetic properties of evaporated Ni/Cu and Ni/glass thin films have been investigated by means of the vibrating sample magnetometer (VSM), the Brillouin light scattering (BLS) and magnetic force microscopy (MFM). The Ni thickness, t, ranges from 31 to 165 nm. The second- and fourth-order magnetic anisotropy constants, K {sub 1} and K {sub 2}, have been included; for the Ni/Cu series, K {sub 1} was found to decrease from 1.0x10{sup 6} to 0.18x10{sup 6} erg/cm{sup 3} as t increases from 31 to 165 nm, while K {sub 2} increased from 0.24x10{sup 6} to 0.8x10{sup 6} erg/cm{sup 3}. Over all the thickness range, the magnetization easy axis is in plane. For thinner films, there is a good agreement between anisotropy constant values inferred from VSM and BLS. Stripe domains were observed for t{>=}165 nm in Ni/glass and t{>=}90 nm in Ni/Cu.

Calculation of the magnetic anisotropy energy and finite-temperature magnetic properties of transition-metal films

International Nuclear Information System (INIS)

Garibay-Alonso, R; Villasenor-Gonzalez, P; Dorantes-Davila, J; Pastor, G M

2004-01-01

The magnetic anisotropy energy at the interface (IMAE) of Co films deposited on the Pd(111) surface are determined in the framework of a self-consistent, real-space tight-binding method at zero temperature. Significant spin moments are induced at the Pd atoms at the interface which have an important influence on the observed reorientation transitions as a function of Co film thickness. Film-substrate hybridizations are therefore crucial for the magneto-anisotropic behaviour of thin transition-metal films deposited on metallic non-magnetic substrates. Furthermore, using a real-space recursive expansion of the local Green function and within the virtual-crystal approximation we calculate the magnetization curves and the Curie temperature T C for free-standing Fe films

Selective tuning of magnetization dynamics damping in Tb- and Nd-doped permalloy ultrathin films by adjacent copper nanolayers

Energy Technology Data Exchange (ETDEWEB)

Zhang, Dong, E-mail: physzd@yahoo.com [School of Physics Science and Information Engineering, Key Lab. of Communication Science and Technology of Shandong Province, Liaocheng University, Liaocheng 252059 (China); Physics Department, Southeast University, Nanjing 211189 (China); Yue, Jinjin; Jiang, Sheng [Physics Department, Southeast University, Nanjing 211189 (China); Zhai, Ya, E-mail: yazhai@seu.edu.cn [Physics Department, Southeast University, Nanjing 211189 (China); National Laboratory of Solid Microstructures, Nanjing University, Nanjing 210093 (China); Du, Jun; Zhai, Hongru [National Laboratory of Solid Microstructures, Nanjing University, Nanjing 210093 (China)

2016-07-05

The mechanism of angular dependence of ferromagnetic resonance linewidth of dilute Tb and Nd doping in permalloy thin films with various thicknesses of adjacent copper layer are investigated by experimental approach and theoretical fitting by considering the contributions from intrinsic spin-orbit coupling, inhomogeneous broadening and two-magnon scattering. The results show that the damping coefficient α, by intrinsic contribution extracted from ferromagnetic resonance linewidth, increases from 0.0153 to 0.0218 for NiFe–Nd films and from 0.0193 to 0.0261 for NiFe–Tb films resulting from the spin pumping effect at the interface of NiFe–Nd(or Tb)/Cu as the thickness of copper layer increases from 1 nm to 15 nm. The surface magnetic anisotropy constant K{sub 1} is obtained and shows an decreasing trend from positive to negative, which implies that the copper layer could reduce the surface perpendicular anisotropy. The fitting spin mixed conductivity is (2.72 ± 0.18) × 10{sup 15} cm{sup −2} at NiFe–Tb/Cu interface and (2.4 ± 0.2) × 10{sup 15} cm{sup −2} at Cu/NiFe–Nd interface, respectively. - Highlights: • The thickness of Cu buffer layer affects the surface perpendicular anisotropy of FM layer. • The interface roughness could be investigated by using FMR linewidth. • The damping coefficient is enhanced by spin-pumping effect.

Preferential growth of short aligned, metallic-rich single-walled carbon nanotubes from perpendicular layered double hydroxide film.

Science.gov (United States)

Zhao, Meng-Qiang; Tian, Gui-Li; Zhang, Qiang; Huang, Jia-Qi; Nie, Jing-Qi; Wei, Fei

2012-04-07

Direct bulk growth of single-walled carbon nanotubes (SWCNTs) with required properties, such as diameter, length, and chirality, is the first step to realize their advanced applications in electrical and optical devices, transparent conductive films, and high-performance field-effect transistors. Preferential growth of short aligned, metallic-rich SWCNTs is a great challenge to the carbon nanotube community. We report the bulk preferential growth of short aligned SWCNTs from perpendicular Mo-containing FeMgAl layered double hydroxide (LDH) film by a facile thermal chemical vapor deposition with CH(4) as carbon source. The growth of the short aligned SWCNTs showed a decreased growth velocity with an initial value of 1.9 nm s(-1). Such a low growth velocity made it possible to get aligned SWCNTs shorter than 1 μm with a growth duration less than 15 min. Raman spectra with different excitation wavelengths indicated that the as-grown short aligned SWCNTs showed high selectivity of metallic SWCNTs. Various kinds of materials, such as mica, quartz, Cu foil, and carbon fiber, can serve as the substrates for the growth of perpendicular FeMoMgAl LDH films and also the growth of the short aligned SWCNTs subsequently. These findings highlight the easy route for bulk preferential growth of aligned metallic-rich SWCNTs with well defined length for further bulk characterization and applications. This journal is © The Royal Society of Chemistry 2012

Study of relaxation processes and uniaxial anisotropy in the Europium Gallium Garnet epitaxial films

International Nuclear Information System (INIS)

Mukhopadhyay, P.

1987-04-01

We report here the magnetic properties of Europium-Gallium Garnet LPE films of the type Eu x Y 3-x Fe 5-y Ga y O 12 (where O< x<1.2 and 1< y<1.1). The mechanism by which the magnetic moments relax in Eu or Sm Garnets is still not fully understood. We have made studies on Eu-Ga garnet films and explain some of the results observed in these films. Pb and Pt ions are always found as impurities in our films. Pb ions contribute to the anisotropy in the film. Most of the experimental results can be explained with the three sub lattice model. The shape of the FMR line width shows strong sensitivity towards the surface impurities. (author). 18 refs, 6 figs, 1 tab

Structure induced magnetic anisotropy behavior in Co/GaAs(001) films

Science.gov (United States)

Blundell, S. J.; Gester, M.; Bland, J. A. C.; Daboo, C.; Gu, E.; Baird, M. J.; Ives, A. J. R.

1993-05-01

Epitaxial Co has been grown on GaAs(001) and studied by both low-energy electron diffraction (LEED) and reflection high-energy electron diffraction (RHEED), and by the magneto-optic Kerr effect (MOKE) and polarized neutron reflection (PNR). Three samples were fabricated using different growth procedures: (1) ``interrupted'' growth (including an anneal); (2) and (3) continuous growth of similar thicknesses. For sample 1, RHEED patterns indicate an initial growth in the bcc phase followed by a relaxation into a distorted single phase at completion of growth, whereas samples 2 and 3 showed a multicrystalline structure after growth. LEED patterns were used to check the existence of the 2×4 reconstruction patterns before growth, but no LEED patterns could be obtained after more than 2 Å Co was deposited, in contrast to the RHEED patterns which remained visible throughout the growth. Structural analysis of the completed films indicates the formation of a ˜10 Å CoO layer on the Co/air interface, and gives thicknesses for magnetic material of (1) 30 Å and (2) 80 Å. Sample 1 showed a dominant fourfold magnetic anisotropy with the easy axis parallel to the (100) direction and with a strength 2K4/M of ˜0.5 kOe, smaller in magnitude than that reported for bcc films on GaAs(110) but along the same axis [G. A. Prinz et al., J. Appl. Phys. 57, 3672 (1985)]. However, samples 2 and 3 showed only a large uniaxial anisotropy along the (110) direction of strength 2K1/M of ˜1.5 kOe and ˜2.5 kOe, respectively, similar in magnitude to those previously observed [G. A. Prinz et al., J. Appl. Phys. 57, 3676 (1985)]. We attribute the origin of the contrasting magnetic anisotropy behavior observed to the differences in final structure.

Electrical anisotropy in the presence of oceans—a sensitivity study

Science.gov (United States)

Cembrowski, Marcel; Junge, Andreas

2018-05-01

Electrical anisotropy in the presence of oceans is particularly relevant at continent-ocean subduction zones (e.g. Cascadian and Andean Margin), where seismic anisotropy has been found with trench-parallel or perpendicular fast direction. The identification of electrical anisotropy at such locations sheds new light on the relation between seismic and electrical anisotropies. At areas confined by two opposite oceans, for example the Pyrenean Area and Central America, we demonstrate that the superposed responses of both oceans generate a uniform and large phase split of the main phase tensor axes. The pattern of the tipper arrows is comparatively complicated and it is often difficult to associate their length and orientation to the coast effect. On the basis of simple forward models involving opposite oceans and anisotropic layers, we show that both structures generate similar responses. In the case of a deep anisotropic layer, the resistivity and phase split generated by the oceans alone will be increased or decreased depending on the azimuth of the conducting horizontal principal axes. The 3-D isotropic inversion of the anisotropic forward responses reproduces the input data reasonably well. The anisotropy is explained by large opposed conductors outside the station grid and by tube-like elongated conductors representing a macroscopic anisotropy. If the conductive direction is perpendicular to the shorelines, the anisotropy is not recovered by 3-D isotropic inversion.

Preparation and evaluation of Mn3GaN1-x thin films with controlled N compositions

Science.gov (United States)

Ishino, Sunao; So, Jongmin; Goto, Hirotaka; Hajiri, Tetsuya; Asano, Hidefumi

2018-05-01

Thin films of antiperovskite Mn3GaN1-x were grown on MgO (001) substrates by reactive magnetron sputtering, and their structural, magnetic, and magneto-optical properties were systematically investigated. It was found that the combination of the deposition rate and the N2 gas partial pressure could produce epitaxial films with a wide range of N composition (N-deficiency) and resulting c/a values (0.93 - 1.0). While the films with c/a = 0.992 - 1.0 were antiferromagnetic, the films with c/a = 0.93 - 0.989 showed perpendicular magnetic anisotropy (PMA) with the maximum PMA energy up to 1.5×106 erg/cm3. Systematic dependences of the energy spectra of the polar Kerr signals on the c/a ratio were observed, and the Kerr ellipticity was as large as 2.4 deg. at 1.9 eV for perpendicularly magnetized ferromagnetic thin films with c/a = 0.975. These results highlight that the tetragonal distortion plays an important role in magnetic and magneto-optical properties of Mn3GaN1-x thin films.

Dependence of magnetic anisotropy on MgO sputtering pressure in Co20Fe60B20/MgO stacks

Science.gov (United States)

Kaidatzis, A.; Serletis, C.; Niarchos, D.

2017-10-01

We investigated the dependence of magnetic anisotropy of Ta/Co20Fe60B20/MgO stacks on the Ar partial pressure during MgO deposition, in the range between 0.5 and 15 mTorr. The stacks are studied before and after annealing at 300°C and it is shown that magnetic anisotropy significantly depends on Ar partial pressure. High pressure results in stacks with very low perpendicular magnetic anisotropy even after annealing, while low pressure results in stacks with perpendicular anisotropy even at the as-deposited state. A monotonic increase of magnetic anisotropy energy is observed as Ar partial pressure is decreased.

Mechanism of tailored magnetic anisotropy in amorphous Co{sub 68}Fe{sub 24}Zr{sub 8} thin films

Energy Technology Data Exchange (ETDEWEB)

Fu, Yu, E-mail: yu.fu@uni-due.de, E-mail: cangcangzhulin@gmail.com; Meckenstock, R.; Farle, M. [Fakultät für Physik and Center for Nanointegration Duisburg-Essen (CeNIDE), Universität Duisburg-Essen, 47057 Duisburg (Germany); Barsukov, I., E-mail: ibarsuko@uci.edu [Fakultät für Physik and Center for Nanointegration Duisburg-Essen (CeNIDE), Universität Duisburg-Essen, 47057 Duisburg (Germany); Physics and Astronomy, University of California, Irvine, California 92697 (United States); Lindner, J. [Fakultät für Physik and Center for Nanointegration Duisburg-Essen (CeNIDE), Universität Duisburg-Essen, 47057 Duisburg (Germany); Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf e.V., Bautzner Landstr. 400, 01328 Dresden (Germany); Raanaei, H. [Department of Physics, Persian Gulf University, Bushehr 75169 (Iran, Islamic Republic of); Hjörvarsson, B. [Department of Physics and Astronomy, Uppsala University, Box 516 SE-75120 Uppsala (Sweden)

2014-02-17

The mechanism of tailored magnetic anisotropy in amorphous Co{sub 68}Fe{sub 24}Zr{sub 8} thin films was investigated by ferromagnetic resonance (FMR) on samples deposited without an applied magnetic field, with an out-of-plane field and an in-plane field. Analysis of FMR spectra profiles, high frequency susceptibility calculations, and statistical simulations using a distribution of local uniaxial magnetic anisotropy reveal the presence of atomic configurations with local uniaxial anisotropy, of which the direction can be tailored while the magnitude remains at an intrinsically constant value of 3.0(2) kJ/m{sup 3}. The in-plane growth field remarkably sharpens the anisotropy distribution and increases the sample homogeneity. The results benefit designing multilayer spintronic devices based on highly homogeneous amorphous layers with tailored magnetic anisotropy.

Optical anisotropy, molecular orientations, and internal stresses in thin sulfonated poly(ether ether ketone) films

NARCIS (Netherlands)

Koziara, B.T.; Nijmeijer, K.; Benes, N.E.

2015-01-01

The thickness, the refractive index, and the optical anisotropy of thin sulfonated poly(ether ether ketone) films, prepared by spin-coating or solvent deposition, have been investigated with spectroscopic ellipsometry. For not too high polymer concentrations (≤5 wt%) and not too low spin speeds

Optical anisotropy, molecular orientations, and internal stresses in thin sulfonated poly(ether ether ketone) films

NARCIS (Netherlands)

Koziara, Beata; Nijmeijer, Dorothea C.; Benes, Nieck Edwin

2015-01-01

The thickness, the refractive index, and the optical anisotropy of thin sulfonated poly(ether ether ketone) films, prepared by spin-coating or solvent deposition, have been investigated with spectroscopic ellipsometry. For not too high polymer concentrations (B5 wt%) and not too low spin speeds

Magnetic and exchange bias properties of YCo thin films and IrMn/YCo bilayers

Science.gov (United States)

Venkat Narayana, M.; Manivel Raja, M.; Jammalamadaka, S. Narayana

2018-02-01

We report on the structural and magnetic properties of YCo thin films and IrMn/YCo bilayers. X-ray diffraction infer that all the films are amorphous in nature. Magnetization versus magnetic field measurements reveal room temperature soft ferromagnetism in all the YCo films. Thin films which were grown at 100 W sputter power with growth rates of 0.677, 0.694 and 0.711 Å/sec show better morphology and composition than 50 W (0.333, 0.444 and 0.277 Å/sec) grown films. Perpendicular exchange bias in as deposited bilayers is evident for IrMn/YCo bilayers. Exchange bias (EB) decreases in case of in plane measurements and enhances for out of plane measurements after perpendicular field annealing. EB is more in case of out of plane direction due to large perpendicular anisotropy in comparison with in plane direction. Above the critical thickness, EB variation is explained on the basis of random field model in the Heisenberg regime, which has been proposed by Malozemoff. Indeed there exists an inverse relationship between EB and IrMn layer thickness. Evidenced vertical shift apart from the horizontal shift for magnetization loops is attributed to frozen magnetic moments in one of the layers at the interface. Present results would prove to be helpful in spintronic device applications.

Friction Anisotropy with Respect to Topographic Orientation

Science.gov (United States)

Yu, Chengjiao; Wang, Q. Jane

2012-01-01

Friction characteristics with respect to surface topographic orientation were investigated using surfaces of different materials and fabricated with grooves of different scales. Scratching friction tests were conducted using a nano-indentation-scratching system with the tip motion parallel or perpendicular to the groove orientation. Similar friction anisotropy trends were observed for all the surfaces studied, which are (1) under a light load and for surfaces with narrow grooves, the tip motion parallel to the grooves offers higher friction coefficients than does that perpendicular to them, (2) otherwise, equal or lower friction coefficients are found under this motion. The influences of groove size relative to the diameter of the mating tip (as a representative asperity), surface contact stiffness, contact area, and the characteristic stiction length are discussed. The appearance of this friction anisotropy is independent of material; however, the boundary and the point of trend transition depend on material properties. PMID:23248751

Four-fold magnetic anisotropy in a Co film on MgO(0 0 1)

International Nuclear Information System (INIS)

Pires, M.J.M.; Cotta, A.A.C.; Martins, M.D.; Silva, A.M.A.; Macedo, W.A.A.

2011-01-01

The development of devices based on magnetic tunnel junctions has raised new interests on the structural and magnetic properties of the interface Co/MgO. In this context, we have grown ultrathin Co films (≤30 A) by molecular-beam epitaxy on MgO(0 0 1) substrates kept at different temperatures (T S ). Their structural and magnetic properties were correlated and discussed in the context of distinct magnetic anisotropies for Co phases reported in the literature. The sample characterization has been done by reflection high energy electron diffraction, magneto-optical Kerr effect and ferromagnetic resonance. The main focus of the work is on a sample deposited at T S =25 o C, as its particular way of growth has enabled a bct Co structure to settle on the substrate, where it is not normally obtained without specific seed layers. This sample presented the best crystallinity, softer magnetic properties and a four-fold in-plane magnetic anisotropy with Co easy directions. Concerning the samples prepared at T S =200 and 500 o C, they show fcc and polycrystalline structures, respectively and more intricate magnetic anisotropy patterns. - Research Highlights: →Results suggest the lattice is already after the Bain transformation for T S =25 o C, and the Co film has a bct structure instead of an fct one. →For deposition temperature of T S =25 o C, a four-fold in-plane magnetic anisotropy with Co easy directions has been obtained. →The growth mode of Co on MgO single crystals at different temperatures resulted in bct Co at T S =25 o C, fcc Co at T S =200 o C and polycrystalline Co at T S =500 o C.

Anisotropy effect on strengths of metamorphic rocks

Directory of Open Access Journals (Sweden)

Ahmet Özbek

2018-02-01

Full Text Available This paper aims to study the effect of anisotropy on strengths of several metamorphic rocks of southern (Çine submassif of Menderes metamorphic massif in southwest Turkey. Four different metamorphic rocks including foliated phyllite, schist, gneiss and marble (calcschist were selected and examined. Discontinuity surveys were made along lines for each rock and evaluated with DIPS program. L-type Schmidt hammer was applied in the directions parallel and perpendicular to foliation during the field study. Several hand samples and rock blocks were collected during the field study for measurements of dry and saturated densities, dry and saturated unit weights and porosity, and for petrographic analysis and strength determination in laboratory. L- and N-type Schmidt hammers were applied in the directions perpendicular (anisotropy angle of 0° and parallel (anisotropy angle of 90° to the foliation on selected blocks of phyllite, schist, gneiss and marble (calcschist. The phyllite and schist have higher porosity and lower density values than the other rocks. However, coarse crystalline gneiss and marble (calcschist have higher rebound values and strengths, and they are classified as strong–very strong rocks. Generally, the rebound values in the direction perpendicular to the foliation are slightly higher than that in the direction parallel to foliation. Rebound values of N-type Schmidt hammer are higher than the L-type values except for phyllite. Sometimes, the rebound values of laboratory and field applications gave different results. This may result from variable local conditions such as minerals differentiation, discontinuities, water content, weathering degree and thickness of foliated structure.

Enhanced post-annealing stability of perpendicular Ta/CoFeB/Mg/MgO multilayers by inhibiting Ta diffusion

Energy Technology Data Exchange (ETDEWEB)

Li, Xu-Jing; Jiang, Shao-Long; Zhang, Jing-Yan; Liu, Qian-Qian; Liu, Yi-Wei; Zhao, Jian-Cheng [Department of Materials Physics and Chemistry, University of Science and Technology Beijing, Beijing 100083 (China); Wu, Zheng-Long [Analytical and Testing Center, Beijing Normal University, Beijing 100875 (China); Feng, Chun, E-mail: fengchun@ustb.edu.cn [Department of Materials Physics and Chemistry, University of Science and Technology Beijing, Beijing 100083 (China); Li, Ming-Hua [Department of Materials Physics and Chemistry, University of Science and Technology Beijing, Beijing 100083 (China); Yu, Guang-Hua, E-mail: ghyu@mater.ustb.edu.cn [Department of Materials Physics and Chemistry, University of Science and Technology Beijing, Beijing 100083 (China)

2016-03-01

Graphical abstract: To reveal the underlying mechanism of Mg influence on the enhanced post-annealing stability of perpendicular Ta/CoFeB/Mg/MgO multilayers, the X-ray photoelectron spectroscopy analysis have been performed. It is found that a certain amount of Mg interlayer at the CoFeB/MgO interface could prevent the Ta oxidation to some extent due to the oxygen deficit MgO{sub x} (x < 1), and consequently lower the diffusion motivation of Ta from the bottom layer to the CoFeB/MgO interfaces to some extent during the annealing process. The prevention of Ta diffusion realizes the effective hybridization of Fe and O at the CoFeB/MgO interface and maintains interfacial magnetic anisotropy (K{sub CoFeB/MgO}). As a result, the perpendicular magnetic anisotropy at high annealing temperatures was maintained. - Highlights: • High annealing stability of perpendicular Ta/CoFeB/Mg/MgO multilayers was realized. • X-ray photoelectron spectroscopy analysis has been performed to explore the reasons. • The prevention of Ta diffusion was realized by introducing Mg at the CoFeB/MgO interface. - Abstracts: To reveal the underlying mechanism of Mg influence on the enhanced post-annealing stability of perpendicular Ta/CoFeB/Mg/MgO multilayers, the X-ray photoelectron spectroscopy analysis has been performed. It is found that a certain amount of Mg interlayer at the CoFeB/MgO interface could prevent the Ta oxidation, and consequently lower the diffusion motivation of Ta from the bottom layer to the CoFeB/MgO interfaces to some extent in the annealing process. The prevention of Ta diffusion realizes the effective hybridization of Fe and O at the CoFeB/MgO interface and maintains interfacial magnetic anisotropy (KCoFeB/MgO). As a result, the perpendicular magnetic anisotropy at high annealing temperatures is maintained.

Enhanced post-annealing stability of perpendicular Ta/CoFeB/Mg/MgO multilayers by inhibiting Ta diffusion

International Nuclear Information System (INIS)

Li, Xu-Jing; Jiang, Shao-Long; Zhang, Jing-Yan; Liu, Qian-Qian; Liu, Yi-Wei; Zhao, Jian-Cheng; Wu, Zheng-Long; Feng, Chun; Li, Ming-Hua; Yu, Guang-Hua

2016-01-01

Graphical abstract: To reveal the underlying mechanism of Mg influence on the enhanced post-annealing stability of perpendicular Ta/CoFeB/Mg/MgO multilayers, the X-ray photoelectron spectroscopy analysis have been performed. It is found that a certain amount of Mg interlayer at the CoFeB/MgO interface could prevent the Ta oxidation to some extent due to the oxygen deficit MgO_x (x < 1), and consequently lower the diffusion motivation of Ta from the bottom layer to the CoFeB/MgO interfaces to some extent during the annealing process. The prevention of Ta diffusion realizes the effective hybridization of Fe and O at the CoFeB/MgO interface and maintains interfacial magnetic anisotropy (K_C_o_F_e_B_/_M_g_O). As a result, the perpendicular magnetic anisotropy at high annealing temperatures was maintained. - Highlights: • High annealing stability of perpendicular Ta/CoFeB/Mg/MgO multilayers was realized. • X-ray photoelectron spectroscopy analysis has been performed to explore the reasons. • The prevention of Ta diffusion was realized by introducing Mg at the CoFeB/MgO interface. - Abstracts: To reveal the underlying mechanism of Mg influence on the enhanced post-annealing stability of perpendicular Ta/CoFeB/Mg/MgO multilayers, the X-ray photoelectron spectroscopy analysis has been performed. It is found that a certain amount of Mg interlayer at the CoFeB/MgO interface could prevent the Ta oxidation, and consequently lower the diffusion motivation of Ta from the bottom layer to the CoFeB/MgO interfaces to some extent in the annealing process. The prevention of Ta diffusion realizes the effective hybridization of Fe and O at the CoFeB/MgO interface and maintains interfacial magnetic anisotropy (KCoFeB/MgO). As a result, the perpendicular magnetic anisotropy at high annealing temperatures is maintained

Preventing dewetting during rapid-thermal annealing of FePt films with enhanced L10 ordering by introducing Ag cap-layers

International Nuclear Information System (INIS)

Hsiao, S.N.; Wu, S.C.; Liu, S.H.; Tsai, J.L.; Chen, S.K.; Chang, Y.C.; Lee, H.Y.

2015-01-01

High-order FePt continuous films with a strong (001) texture were fabricated on a glass substrate by introducing Ag layers and rapid thermal annealing (RTA). The dewetting of the (001)-textured FePt was suppressed during RTA with high heating rates (>80 K/s). The Ag cap layers not only increased the in-plane tensile stress, but also improved the (001) anisotropy and L1 0 ordering of the FePt layers. All continuous Ag/FePt bilayer films possessed strong perpendicular anisotropies and high-ordered states irrespective of the Ag layer thickness. - Highlights: • Dewetting of (001) FePt fims were suppressed by introducing Ag cap layers. • Ag layers enhanced in-plane tensile stress, (001) texture and L1 0 ordering. • Irrespective of Ag thickness, the Ag/FePt films exhibited strong (001) texture

Spin-wave resonances and surface spin pinning in Ga1-xMnxAs thin films

Science.gov (United States)

Bihler, C.; Schoch, W.; Limmer, W.; Goennenwein, S. T. B.; Brandt, M. S.

2009-01-01

We investigate the dependence of the spin-wave resonance (SWR) spectra of Ga0.95Mn0.05As thin films on the sample treatment. We find that for the external magnetic field perpendicular to the film plane, the SWR spectrum of the as-grown thin films and the changes upon etching and short-term hydrogenation can be quantitatively explained via a linear gradient in the uniaxial magnetic anisotropy field in growth direction. The model also qualitatively explains the SWR spectra observed for the in-plane easy-axis orientation of the external magnetic field. Furthermore, we observe a change in the effective surface spin pinning of the partially hydrogenated sample, which results from the tail in the hydrogen-diffusion profile. The latter leads to a rapidly changing hole concentration/magnetic anisotropy profile acting as a barrier for the spin-wave excitations. Therefore, short-term hydrogenation constitutes a simple method to efficiently manipulate the surface spin pinning.

UV-Induced Anisotropy In CdBr2-CdBr2: Cu Nanostructures

Directory of Open Access Journals (Sweden)

El-Naggar A. M.

2015-09-01

Full Text Available We have found an occurrence of anisotropy in the nanostructure CdBr2-CdBr2: Cu nanocrystalline films. The film thickness was varied from 4 nm up to 80 nm. The films were prepared by successive deposition of the novel layers onto the basic nanocrystals. The detection of anisotropy was performed by occurrence of anisotropy in the polarized light at 633 nm He-Ne laser wavelength. The occurrence of anisotropy was substantially dependent on the film thickness and the photoinduced power density. Possible mechanisms of the observed phenomena are discussed.

Thermal strain-induced dielectric anisotropy in Ba0.7Sr0.3TiO3 thin films grown on silicon-based substrates

International Nuclear Information System (INIS)

Zhu, X. H.; Defaye, E.; Aied, M.; Guigues, B.; Dubarry, C.

2009-01-01

Dielectric properties of Ba 0.7 Sr 0.3 TiO 3 (BST) thin films, which were prepared on silicon-based substrates by ion beam sputtering and postdeposition annealing method, were systematically investigated in different electrode configurations of metal-insulator-metal and coplanar interdigital capacitors. It was found that a large dielectric anisotropy exists in the films with better in-plane dielectric properties (higher dielectric permittivity and tunability) than those along the out-of-plane direction. The observed anisotropic dielectric responses are explained qualitatively in terms of a thermal strain effect that is related to dissimilar film strains along the in-plane and out-of-plane directions. Another reason for the dielectric anisotropy is due to different influences of the interfacial low-dielectric layer between the BST film and the substrate (metal electrode).

Thermal strain-induced dielectric anisotropy in Ba0.7Sr0.3TiO3 thin films grown on silicon-based substrates

Science.gov (United States)

Zhu, X. H.; Guigues, B.; Defaÿ, E.; Dubarry, C.; Aïd, M.

2009-07-01

Dielectric properties of Ba0.7Sr0.3TiO3 (BST) thin films, which were prepared on silicon-based substrates by ion beam sputtering and postdeposition annealing method, were systematically investigated in different electrode configurations of metal-insulator-metal and coplanar interdigital capacitors. It was found that a large dielectric anisotropy exists in the films with better in-plane dielectric properties (higher dielectric permittivity and tunability) than those along the out-of-plane direction. The observed anisotropic dielectric responses are explained qualitatively in terms of a thermal strain effect that is related to dissimilar film strains along the in-plane and out-of-plane directions. Another reason for the dielectric anisotropy is due to different influences of the interfacial low-dielectric layer between the BST film and the substrate (metal electrode).

Preventing dewetting during rapid-thermal annealing of FePt films with enhanced L1{sub 0} ordering by introducing Ag cap-layers

Energy Technology Data Exchange (ETDEWEB)

Hsiao, S.N., E-mail: pmami.hsiao@gmail.com [Department of Materials Science and Engineering, Feng Chia University, Taichung 40724, Taiwan (China); Department of Power Mechanical Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan (China); Wu, S.C. [Department of Materials Science and Engineering, National Chung Hsing University, Taichung 40227, Taiwan (China); Liu, S.H. [Department of Materials Science and Engineering, Feng Chia University, Taichung 40724, Taiwan (China); Tsai, J.L., E-mail: tsaijl@dragon.nchu.edu.tw [Department of Materials Science and Engineering, National Chung Hsing University, Taichung 40227, Taiwan (China); Chen, S.K. [Department of Materials Science and Engineering, Feng Chia University, Taichung 40724, Taiwan (China); Chang, Y.C. [Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan (China); Lee, H.Y. [Scientific Research Division, National Synchrotron Radiation Research Center, Hsinchu 30077, Taiwan (China)

2015-11-15

High-order FePt continuous films with a strong (001) texture were fabricated on a glass substrate by introducing Ag layers and rapid thermal annealing (RTA). The dewetting of the (001)-textured FePt was suppressed during RTA with high heating rates (>80 K/s). The Ag cap layers not only increased the in-plane tensile stress, but also improved the (001) anisotropy and L1{sub 0} ordering of the FePt layers. All continuous Ag/FePt bilayer films possessed strong perpendicular anisotropies and high-ordered states irrespective of the Ag layer thickness. - Highlights: • Dewetting of (001) FePt fims were suppressed by introducing Ag cap layers. • Ag layers enhanced in-plane tensile stress, (001) texture and L1{sub 0} ordering. • Irrespective of Ag thickness, the Ag/FePt films exhibited strong (001) texture.

Dynamical formation of spatially localized arrays of aligned nanowires in plastic films with magnetic anisotropy.

Science.gov (United States)

Fragouli, Despina; Buonsanti, Raffaella; Bertoni, Giovanni; Sangregorio, Claudio; Innocenti, Claudia; Falqui, Andrea; Gatteschi, Dante; Cozzoli, Pantaleo Davide; Athanassiou, Athanassia; Cingolani, Roberto

2010-04-27

We present a simple technique for magnetic-field-induced formation, assembling, and positioning of magnetic nanowires in a polymer film. Starting from a polymer/iron oxide nanoparticle casted solution that is allowed to dry along with the application of a weak magnetic field, nanocomposite films incorporating aligned nanocrystal-built nanowire arrays are obtained. The control of the dimensions of the nanowires and of their localization across the polymer matrix is achieved by varying the duration of the applied magnetic field, in combination with the evaporation dynamics. These multifunctional anisotropic free-standing nanocomposite films, which demonstrate high magnetic anisotropy, can be used in a wide field of technological applications, ranging from sensors to microfluidics and magnetic devices.

Epitaxial growth and magnetic properties of Fe4-xMnxN thin films grown on MgO(0 0 1) substrates by molecular beam epitaxy

Science.gov (United States)

Anzai, Akihito; Takata, Fumiya; Gushi, Toshiki; Toko, Kaoru; Suemasu, Takashi

2018-05-01

Epitaxial Fe4-xMnxN (x = 0, 1, 2, 3, and 4) thin films were successfully grown on MgO(0 0 1) single-crystal substrates by molecular beam epitaxy, and their crystalline qualities and magnetic properties were investigated. It was found that the lattice constants of Fe4-xMnxN obtained from X-ray diffraction measurement increased with the Mn content. The ratio of the perpendicular lattice constant c to the in-plane lattice constant a of Fe4-xMnxN was found to be about 0.99 at x ⩾ 2. The magnetic properties evaluated using a vibrating sample magnetometer at room temperature revealed that all of the Fe4-xMnxN films exhibited ferromagnetic behavior regardless of the value of x. In addition, the saturation magnetization decreased non-linearly as the Mn content increased. Finally, FeMn3N and Mn4N exhibited perpendicular anisotropy and their uniaxial magnetic anisotropy energies were 2.2 × 105 and 7.5 × 105 erg/cm3, respectively.

Magnetocrystalline Anisotropy of Magnetic Grains in Co80Pt20:Oxide Thin Films Probed by X-ray Magnetic Circular Dichroism

Energy Technology Data Exchange (ETDEWEB)

Zhang, W.; Morton, S. A.; Wong, P. K. J.; Arenholz, E.; Lu, B.; Cheng, T. Y.; Xu, Y. B.; Laan, G. van der; Hu, X.F

2011-01-12

Using angle-dependent x-ray magnetic circular dichroism, we have measured magnetic hysteresis loops at the Co L2,3 edges of oxide-doped Co80Pt20 thin films. The magnetocrystalline anisotropy energy (MAE) of the Co atoms, which is the main source of the magnetocrystalline anisotropy of the CoPt magnetic grains, has been determined directly from these element-specific hysteresis loops. When the oxide volume fraction (OVF) is increased from 16.6% to 20.7%, the Co MAE has been found to decrease from 0.117 meV/atom to 0.076 meV/atom. While a larger OVF helps one to achieve a smaller grain size, it reduces the magnetocrystalline anisotropy, as demonstrated unambiguously from the direct Co MAE measurements. Our results suggest that those Co80Pt20:oxide films with an OVF between 19.1% and 20.7% are suitable candidates for high-density magnetic recording.

Magnetic properties of Co/Pt-Pd multilayer thin film media

Energy Technology Data Exchange (ETDEWEB)

Inaba, N.; Igarashi, S.; Fujita, F.; Koike, K.; Kato, H. [Faculty of Engineering, Yamagata University, Yonezawa, Yamagata 992-8510 (Japan); Kirino, F. [National University of Fine Arts and Music, Taitou-ku, Tokyo 110-8714 (Japan)

2007-12-15

We investigated the dependence of magnetic properties for Co/Pt{sub 100-x}Pd{sub x} multilayer thin films on the concentration in the Pt-Pd alloy layers. Perpendicular magneto anisotropy constant K {sub p} increases with increasing Pt concentration in the Pt-Pd layer, since the interface anisotropy between the Co and the Pt-Pd layers is enhanced by the increase of the Pt concentration. The Curie temperature and the temperature dependence of K{sub p} for the specimens increase with increasing the amount of Pt in the Pt-Pd layer. These results may indicate that the lattice distortion of the Co layer caused by the interface from the Pt-Pd layer becomes larger and the increase of the distortion enhances the interface anisotropy, since the lattice misfit between the Pt-Pd and the Co increases with increasing the Pt concentration. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Asymmetric driven dynamics of Dzyaloshinskii domain walls in ultrathin ferromagnetic strips with perpendicular magnetic anisotropy

Energy Technology Data Exchange (ETDEWEB)

Sánchez-Tejerina, L. [Dpto. Electricidad y Electrónica, Facultad de Ciencias, Universidad de Valladolid, 47011 Valladolid (Spain); Alejos, Ó., E-mail: oscaral@ee.uva.es [Dpto. Electricidad y Electrónica, Facultad de Ciencias, Universidad de Valladolid, 47011 Valladolid (Spain); Martínez, E. [Dpto. Física Aplicada, Facultad de Ciencias, Universidad de Salamanca, 37011 Salamanca (Spain); Muñoz, J.M. [Dpto. Electricidad y Electrónica, Facultad de Ciencias, Universidad de Valladolid, 47011 Valladolid (Spain)

2016-07-01

The dynamics of domain walls in ultrathin ferromagnetic strips with perpendicular magnetic anisotropy is studied from both numerical and analytical micromagnetics. The influence of a moderate interfacial Dzyaloshinskii–Moriya interaction associated to a bi-layer strip arrangement has been considered, giving rise to the formation of Dzyaloshinskii domain walls. Such walls possess under equilibrium conditions an inner magnetization structure defined by a certain orientation angle that make them to be considered as intermediate configurations between Bloch and Néel walls. Two different dynamics are considered, a field-driven and a current-driven dynamics, in particular, the one promoted by the spin torque due to the spin-Hall effect. Results show an inherent asymmetry associated with the rotation of the domain wall magnetization orientation before reaching the stationary regime, characterized by a constant terminal speed. For a certain initial DW magnetization orientation at rest, the rotation determines whether the reorientation of the DW magnetization prior to reach stationary motion is smooth or abrupt. This asymmetry affects the DW motion, which can even reverse for a short period of time. Additionally, it is found that the terminal speed in the case of the current-driven dynamics may depend on either the initial DW magnetization orientation at rest or the sign of the longitudinally injected current. - Highlights: • The asymmetric response of domain walls in bilayer strips with PMA is studied. • Out-of-plane fields and SHE longitudinal currents are applied. • The response is associated to the rotation of the domain wall inner magnetization. • Clockwise and counter-clockwise magnetization rotations are not equivalent. • The asymmetry results in different travelled distances and/or terminal speeds.

Asymmetric driven dynamics of Dzyaloshinskii domain walls in ultrathin ferromagnetic strips with perpendicular magnetic anisotropy

International Nuclear Information System (INIS)

Sánchez-Tejerina, L.; Alejos, Ó.; Martínez, E.; Muñoz, J.M.

2016-01-01

The dynamics of domain walls in ultrathin ferromagnetic strips with perpendicular magnetic anisotropy is studied from both numerical and analytical micromagnetics. The influence of a moderate interfacial Dzyaloshinskii–Moriya interaction associated to a bi-layer strip arrangement has been considered, giving rise to the formation of Dzyaloshinskii domain walls. Such walls possess under equilibrium conditions an inner magnetization structure defined by a certain orientation angle that make them to be considered as intermediate configurations between Bloch and Néel walls. Two different dynamics are considered, a field-driven and a current-driven dynamics, in particular, the one promoted by the spin torque due to the spin-Hall effect. Results show an inherent asymmetry associated with the rotation of the domain wall magnetization orientation before reaching the stationary regime, characterized by a constant terminal speed. For a certain initial DW magnetization orientation at rest, the rotation determines whether the reorientation of the DW magnetization prior to reach stationary motion is smooth or abrupt. This asymmetry affects the DW motion, which can even reverse for a short period of time. Additionally, it is found that the terminal speed in the case of the current-driven dynamics may depend on either the initial DW magnetization orientation at rest or the sign of the longitudinally injected current. - Highlights: • The asymmetric response of domain walls in bilayer strips with PMA is studied. • Out-of-plane fields and SHE longitudinal currents are applied. • The response is associated to the rotation of the domain wall inner magnetization. • Clockwise and counter-clockwise magnetization rotations are not equivalent. • The asymmetry results in different travelled distances and/or terminal speeds.

Magnetic anisotropy in GaMnAs; Magnetische Anisotropie in GaMnAs

Energy Technology Data Exchange (ETDEWEB)

Daeubler, Joachim

2009-07-02

The goal of the present work was the detailed investigation of the impact of parameters like vertical strain, hole concentration, substrate orientation and patterning on the MA in GaMnAs. At first a method is introduced enabling us to determine the MA from angle-dependent magnetotransport measurements. This method was used to analyze the impact of vertical strain {epsilon}{sub zz} on the MA in a series of GaMnAs layers with a Mn content of 5% grown on relaxed InGaAs-templates. While hole concentration and Curie temperature were found to be unaffected by vertical strain, a significant dependence of the MA on {epsilon}{sub zz} was found. The most pronounced dependence was observed for the anisotropy parameter B{sub 2} {sub perpendicular} {sub to}, representing the intrinsic contribution to the MA perpendicular to the layer plane. For this parameter a linear dependence on {epsilon}{sub zz} was found, resulting in a strain-induced transition of the magnetic easy axis with increasing strain from in-plane to out-of-plane at {epsilon}{sub zz} {approx} -0.13%. Post-growth annealing of the samples leads to an outdiffusion and/or regrouping of the highly mobile Mn interstitial donor defects, resulting in an increase in both p and T{sub C}. For the annealed samples, the transition from in-plane to out-of-plane easy axis takes place at {epsilon}{sub zz} {approx} -0.07%. From a comparison of as-grown and annealed samples, B{sub 2} {sub perpendicular} {sub to} was found to be proportional to both p and {epsilon}{sub zz}, B{sub 2} {sub perpendicular} {sub to} {proportional_to} p .{epsilon}{sub zz}. To study the influence of substrate orientation on the magnetic properties of GaMnAs, a series of GaMnAs layers with Mn contents up to 5% was grown on (001)- and (113)A-oriented GaAs substrates. The hole densities and Curie temperatures, determined from magnetotransport measurements, are drastically reduced in the (113)A layers. The differences in the magnetic properties of (113)A- and

Thermodynamic and kinetic anisotropies in octane thin films

International Nuclear Information System (INIS)

Haji-Akbari, Amir; Debenedetti, Pablo G.

2015-01-01

Confinement breaks the translational symmetry of materials, making all thermodynamic and kinetic quantities functions of position. Such symmetry breaking can be used to obtain configurations that are not otherwise accessible in the bulk. Here, we use computer simulations to explore the effect of substrate-liquid interactions on thermodynamic and kinetic anisotropies induced by a solid substrate. We consider n-octane nano-films that are in contact with substrates with varying degrees of attraction, parameterized by an interaction parameter ϵ S . Complete freezing of octane nano-films is observed at low temperatures, irrespective of ϵ S , while at intermediate temperatures, a frozen monolayer emerges at solid-liquid and vapor-liquid interfaces. By carefully inspecting the profiles of translational and orientational relaxation times, we confirm that the translational and orientational degrees of freedom are decoupled at these frozen monolayers. At sufficiently high temperatures, however, free interfaces and solid-liquid interfaces close to loose (low-ϵ S ) substrates undergo “pre-freezing,” characterized by mild peaks in several thermodynamic quantities. Two distinct dynamic regimes are observed at solid-liquid interfaces. The dynamics is accelerated in the vicinity of loose substrates, while sticky (high-ϵ S ) substrates decelerate dynamics, sometimes by as much as two orders of magnitude. These two distinct dynamical regimes have been previously reported by Haji-Akbari and Debenedetti [J. Chem. Phys. 141, 024506 (2014)] for a model atomic glass-forming liquid. We also confirm the existence of two correlations—proposed in the above-mentioned work—in solid-liquid subsurface regions of octane thin films, i.e., a correlation between atomic density and normal stress, and between atomic translational relaxation time and lateral stress. Finally, we inspect the ability of different regions of an octane film to explore the potential energy landscape by performing

Thermodynamic and kinetic anisotropies in octane thin films

Energy Technology Data Exchange (ETDEWEB)

Haji-Akbari, Amir; Debenedetti, Pablo G., E-mail: pdebene@exchange.princeton.edu [Department of Chemical and Biological Engineering, Princeton University, Princeton, New Jersey 08544 (United States)

2015-12-07

Confinement breaks the translational symmetry of materials, making all thermodynamic and kinetic quantities functions of position. Such symmetry breaking can be used to obtain configurations that are not otherwise accessible in the bulk. Here, we use computer simulations to explore the effect of substrate-liquid interactions on thermodynamic and kinetic anisotropies induced by a solid substrate. We consider n-octane nano-films that are in contact with substrates with varying degrees of attraction, parameterized by an interaction parameter ϵ{sub S}. Complete freezing of octane nano-films is observed at low temperatures, irrespective of ϵ{sub S}, while at intermediate temperatures, a frozen monolayer emerges at solid-liquid and vapor-liquid interfaces. By carefully inspecting the profiles of translational and orientational relaxation times, we confirm that the translational and orientational degrees of freedom are decoupled at these frozen monolayers. At sufficiently high temperatures, however, free interfaces and solid-liquid interfaces close to loose (low-ϵ{sub S}) substrates undergo “pre-freezing,” characterized by mild peaks in several thermodynamic quantities. Two distinct dynamic regimes are observed at solid-liquid interfaces. The dynamics is accelerated in the vicinity of loose substrates, while sticky (high-ϵ{sub S}) substrates decelerate dynamics, sometimes by as much as two orders of magnitude. These two distinct dynamical regimes have been previously reported by Haji-Akbari and Debenedetti [J. Chem. Phys. 141, 024506 (2014)] for a model atomic glass-forming liquid. We also confirm the existence of two correlations—proposed in the above-mentioned work—in solid-liquid subsurface regions of octane thin films, i.e., a correlation between atomic density and normal stress, and between atomic translational relaxation time and lateral stress. Finally, we inspect the ability of different regions of an octane film to explore the potential energy

Thermodynamic and kinetic anisotropies in octane thin films.

Science.gov (United States)

Haji-Akbari, Amir; Debenedetti, Pablo G

2015-12-07

Confinement breaks the translational symmetry of materials, making all thermodynamic and kinetic quantities functions of position. Such symmetry breaking can be used to obtain configurations that are not otherwise accessible in the bulk. Here, we use computer simulations to explore the effect of substrate-liquid interactions on thermodynamic and kinetic anisotropies induced by a solid substrate. We consider n-octane nano-films that are in contact with substrates with varying degrees of attraction, parameterized by an interaction parameter ϵS. Complete freezing of octane nano-films is observed at low temperatures, irrespective of ϵS, while at intermediate temperatures, a frozen monolayer emerges at solid-liquid and vapor-liquid interfaces. By carefully inspecting the profiles of translational and orientational relaxation times, we confirm that the translational and orientational degrees of freedom are decoupled at these frozen monolayers. At sufficiently high temperatures, however, free interfaces and solid-liquid interfaces close to loose (low-ϵS) substrates undergo "pre-freezing," characterized by mild peaks in several thermodynamic quantities. Two distinct dynamic regimes are observed at solid-liquid interfaces. The dynamics is accelerated in the vicinity of loose substrates, while sticky (high-ϵS) substrates decelerate dynamics, sometimes by as much as two orders of magnitude. These two distinct dynamical regimes have been previously reported by Haji-Akbari and Debenedetti [J. Chem. Phys. 141, 024506 (2014)] for a model atomic glass-forming liquid. We also confirm the existence of two correlations-proposed in the above-mentioned work-in solid-liquid subsurface regions of octane thin films, i.e., a correlation between atomic density and normal stress, and between atomic translational relaxation time and lateral stress. Finally, we inspect the ability of different regions of an octane film to explore the potential energy landscape by performing inherent

Permanent magnetic properties of NdFe12Nx sputtered films epitaxially grown on V buffer layer

Science.gov (United States)

Sato, T.; Ohsuna, T.; Yano, M.; Kato, A.; Kaneko, Y.

2017-08-01

To clarify the magnetic properties of the NdFe12Nx compound, which shows promise as a high-performance permanent magnet material, NdFe12Nx epitaxial films fabricated by using a V underlayer on MgO (100) single-crystalline substrates were investigated. Nd-Fe films deposited on a V underlayer consist of NdFe12 grains, which have a c-axis orientation perpendicular to the film plane, as well as α-Fe and Nd2Fe17 phases. In the Nd-Fe-N film obtained by subsequent nitridation of the Nd-Fe film, NdFe12Nx grains grew as the dominant phase, and the volume fractions of α-Fe phases dropped below 5%. A Nd-Fe-N film with a thickness of 50 nm exhibits a saturation magnetization (Ms) of 1.7 T, an anisotropy field (HA) of ˜60 kOe, a magnetocrystalline anisotropy energy (K1) of ˜4.1 MJ/m3, and a coercivity (Hc) of 1.7 kOe. The Hc of a Nd-Fe-N film with a thickness of 25 nm is 4.3 kOe. These results indicate that NdFe12Nx compounds have a superior Ms compared to Nd-Fe-B magnets, while the enhancement in Hc is indispensable.

Synthesis, structure and magnetic properties of crystallographically aligned CuCr_2Se_4 thin films

International Nuclear Information System (INIS)

Esters, Marco; Liebig, Andreas; Ditto, Jeffrey J.; Falmbigl, Matthias; Albrecht, Manfred; Johnson, David C.

2016-01-01

We report the low temperature synthesis of highly textured CuCr_2Se_4 thin films using the modulated elemental reactant (MER) method. The structure of CuCr_2Se_4 is determined for the first time in its thin film form and exhibits cell parameters that are smaller than found in bulk CuCr_2Se_4. X-ray diffraction and precession electron diffraction show a strong degree of crystallographic alignment of the crystallites, where the axis is oriented perpendicular to the substrate surface, while being rotationally disordered within the plane. Temperature and field dependent in-plane and out-of-plane magnetization measurements show that the film is ferromagnetic with a Curie temperature of 406 K CuCr_2Se_4 synthesized utilizing the MER method shows stronger magnetic anisotropy (effective anisotropy: 1.82 × 10"6 erg cm"−"3; shape anisotropy: 1.07 × 10"6 erg cm"−"3), with the easy axis lying out of plane, and a larger magnetic moment (6 μ_B/f.u.) than bulk CuCr_2Se_4. - Highlights: • Crystallographically aligned, phase pure CuCr_2Se_4 were synthesized. • The degree of alignment decreases with annealing time. • The films are ferromagnetic with the easy axis along the direction. • The magnetization is larger than bulk CuCr_2Se_4 or other CuCr_2Se_4 films made to date.

Controlling the anisotropy and domain structure with oblique deposition and substrate rotation

Directory of Open Access Journals (Sweden)

N. Chowdhury

2014-02-01

Full Text Available Effect of substrate rotation on anisotropy and domain structure for a thin ferromagnetic film has been investigated in this work. For this purpose Co films with 10 nm thickness have been prepared by sputtering with oblique angle of incidence for various substrate rotations. This method of preparation induces a uniaxial anisotropy due to shadow deposition effect. The magnetization reversal is studied by magneto-optic Kerr effect (MOKE based microscope in the longitudinal geometry. The Co films prepared by rotating the substrate with 10 and 20 rpm weakens the anisotropy but does not completely give isotropic films. But this leads to high dispersion in local grain anisotropy resulting in ripple and labyrinth domains. It is observed that the substrate rotation has moderate effect on uniaxial anisotropy but has significant effect on the magnetization reversal process and the domain structure.

Plagioclase-dominated Seismic Anisotropy in the Basin and Range Lower Crust

Science.gov (United States)

Bernard, R. E.; Behr, W. M.

2017-12-01

Observations of seismic anisotropy have the ability to provide important information on deformation and structures within the lithosphere. While the mechanisms controlling seismic anisotropy in the upper mantle are fairly well understood (i.e., olivine "lattice preferred orientation" or LPO), less is known about the minerals and structures controlling regional lower crustal anisotropy. We use lower crustal xenoliths from young cinder cones in the eastern Mojave/western Basin and Range to investigate mineral LPOs and their effect on seismic anisotropy. Lower crustal gabbros were collected from two areas roughly 80 km apart — the Cima and Deadman Lake Volcanic Fields. Lower crustal fabrics measured using EBSD are dominated by LPOs in plagioclase associated with both plastic deformation and magmatic flow. In all fabric types, plagioclase LPOs produce seismic fast axes oriented perpendicular to the foliation plane. This is in contrast to mantle peridotite xenoliths from the same locations, which preserve olivine LPOs with fast axes aligned parallel to the foliation plane. The orthogonal orientations of mantle and lower crustal fast axes relative to foliation implies that even where fabric development in both layers is coeval and kinematically compatible, their measured anisotropies can be perpendicular to each other, therefore appearing anti-correlated when measured seismically. Furthermore, our observation of plagioclase-dominated LPO and negligible concentrations of mica is at odds with the common assumption that lower crustal anisotropy is dominated by micaceous minerals, whose slow axes reliably align parallel to lineation or flow. In contrast, our data show that for plagioclase, fast axes align perpendicular to flow and the slow axes are variably aligned within the foliation plane. Therefore, for a crustal section dominated by plagioclase LPO with assumed horizontal foliation, there would be a vertical rather than a horizontal axis of symmetry, resulting in a

Microscopic return point memory in Co/Pd multilayer films

Energy Technology Data Exchange (ETDEWEB)

Seu, K.A.; Su, R.; Roy, S.; Parks, D.; Shipton, E.; Fullerton, E.E.; Kevan, S.D.

2009-10-01

We report soft x-ray speckle metrology measurements of microscopic return point and complementary point memory in Co/Pd magnetic films having perpendicular anisotropy. We observe that the domains assemble into a common labyrinth phase with a period that varies by nearly a factor of two between initial reversal and fields near saturation. Unlike previous studies of similar systems, the ability of the film to reproduce its domain structure after magnetic cycling through saturation varies from loop to loop, from position to position on the sample, and with the part of the speckle pattern used in the metrology measurements. We report the distribution of memory as a function of field and discuss these results in terms of the reversal process.

Tuning giant anomalous Hall resistance ratio in perpendicular Hall balance

Energy Technology Data Exchange (ETDEWEB)

Zhang, J. Y.; Yang, G. [Department of Materials Physics and Chemistry, University of Science and Technology Beijing, Beijing 100083 (China); State Key Laboratory of Magnetism, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China); Wang, S. G., E-mail: sgwang@iphy.ac.cn, E-mail: ghyu@mater.ustb.edu.cn [State Key Laboratory of Magnetism, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China); Liu, J. L. [State Key Laboratory of Magnetism, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China); Department of Physics, Beijing University of Aeronautics and Astronautics, Beijing 100191 (China); Wang, R. M. [Department of Physics, Beijing University of Aeronautics and Astronautics, Beijing 100191 (China); Amsellem, E.; Kohn, A. [Department of Materials Engineering, Ilse Katz Institute for Nanoscale Science and Technology, Ben-Gurion University of the Negev, Beer-Sheva 84105 (Israel); Yu, G. H., E-mail: sgwang@iphy.ac.cn, E-mail: ghyu@mater.ustb.edu.cn [Department of Materials Physics and Chemistry, University of Science and Technology Beijing, Beijing 100083 (China)

2015-04-13

Anomalous Hall effect at room temperature in perpendicular Hall balance with a core structure of [Pt/Co]{sub 4}/NiO/[Co/Pt]{sub 4} has been tuned by functional CoO layers, where [Pt/Co]{sub 4} multilayers exhibit perpendicular magnetic anisotropy. A giant Hall resistance ratio up to 69 900% and saturation Hall resistance (R{sub S}{sup P}) up to 2590 mΩ were obtained in CoO/[Pt/Co]{sub 4}/NiO/[Co/Pt]{sub 4}/CoO system, which is 302% and 146% larger than that in the structure without CoO layers, respectively. Transmission electron microscopy shows highly textured [Co/Pt]{sub 4} multilayers and oxide layers with local epitaxial relations, indicating that the crystallographic structure has significant influence on spin dependent transport properties.

Magneto-optical enhancement of TbFeCo/Al films at short wavelength

International Nuclear Information System (INIS)

Song, K.; Ito, H.; Naoe, M.

1992-01-01

In this paper, the bilayered films composed of magneto-optical (MO) amorphous Tb-Te-Co alloy and reflective Al layers were deposited successively on glass slide substrates without plasma exposure by using the facing targets sputtering system. The specimen films with the thickness of MO layer t MO below 5 nm showed apparent perpendicular magnetic anisotropy constant Ku of 2 to 3 x 10 6 erg/cm3 and rectangular Kerr loop. The specimen film with t MO of 14 nm took the Kerr rotation angle θ k as large as about 0.36 degree, at the wavelength λ as short as about 400 nm. These values of θ k is considerably larger than those of the bilayered films in the conventional MO media. Normally, the bilayered films with t MO above 50 nm took θ k of about 0.25 degree at θ k of 400 nm

Properties of HTS YBCO thin films deposited on tilted NdGaO3 substrates

International Nuclear Information System (INIS)

Nurgaliev, T.; Donchev, T.; Mateev, E.; Miteva, S.; Mozhaev, P.B.; Mozhaeva, J.E.

2005-01-01

Thin YBa 2 Cu 3 O 7 films were fabricated by 2-opposed DC magnetron sputtering onto NdGaO 3 substrates, tilted from standard (1 1 0) orientation by 0-26 deg , and their surface morphology and electrical characteristics were investigated. Normal state resistivity (at 295 K) and microwave surface resistance (at 77 K and ∼8 GHz) of the films demonstrated anisotropy, introduced by the tilted substrate, and some improvement of the superconducting parameters of the films was observed at small tilt angles (θ ∼ 1.5-3 deg ). The increase of the microwave surface resistance at high tilt angles for the current tracks, perpendicular to the steps of the substrate, was described in the framework of a simple model, which takes into account the complex conductivity of the film and the weak links between the film terraces

On the Acceleration and Anisotropy of Ions Within Magnetotail Dipolarizing Flux Bundles

Science.gov (United States)

Zhou, Xu-Zhi; Runov, Andrei; Angelopoulos, Vassilis; Artemyev, Anton V.; Birn, Joachim

2018-01-01

Dipolarizing flux bundles (DFBs), earthward propagating structures with enhanced northward magnetic field Bz, are usually believed to carry a distinctly different plasma population from that in the ambient magnetotail plasma sheet. The ion distribution functions within the DFB, however, have been recently found to be largely controlled by the ion adiabaticity parameter κ in the ambient plasma sheet outside the DFB. According to these observations, the ambient κ values of 2-3 usually correspond to a strong perpendicular anisotropy of suprathermal ions within the DFB, whereas for lower κ values the DFB ions become more isotropic. Here we utilize a simple, test particle model to explore the nature of the anisotropy and its dependence on the ambient κ values. We find that the anisotropy originates from successive ion reflections and reentries to the DFB, during which the ions are consecutively accelerated in the perpendicular direction by the DFB-associated electric field. This consecutive acceleration may be interrupted, however, when magnetic field lines are highly curved in the ambient plasma sheet. In this case, the ion trajectories become stochastic outside the DFB, which makes the reflected ions less likely to return to the DFB for another cycle of acceleration; as a consequence, the perpendicular ion anisotropy does not appear. Given that the DFB ions are a free energy source for instabilities when they are injected toward Earth, our simple model (that reproduces most observational features on the anisotropic DFB ion distributions) may shed new lights on the coupling process between magnetotail and inner magnetosphere.

Magnetocrystalline and configurational anisotropies in Fe nanostructures

International Nuclear Information System (INIS)

Vavassori, P.; Bisero, D.; Carace, F.; Liberati, M.; Di Bona, A.; Gazzadi, G.C.; Valeri, S.

2005-01-01

Arrays of single-crystal Fe micron and submicron squares and disks, have been fabricated using a focused ion beam apparatus from a film epitaxially grown on MgO. The hysteresis loops of the patterned areas differ from those of the continuous film as a consequence of the different reversal determined by the lateral confinement of the Fe film. By means of modulated field magneto-optical anisometry measurements we studied the symmetry and the strength of the overall anisotropy. For the smaller square elements we observed a higher-order term in the overall anisotropy with eightfold symmetry arising from the configurational contribution

Experimental investigation of ultrasonic velocity anisotropy in ...

Indian Academy of Sciences (India)

Permanent link: https://www.ias.ac.in/article/fulltext/pram/077/02/0345-0355. Keywords. Magnetic fluids; ultrasonic wave; sound velocity; anisotropy. Abstract. Magnetic field-induced dispersion of ultrasonic velocity in a Mn0.7Zn0.3Fe2O4 fluid (applied magnetic field is perpendicular to the ultrasonic propagation vector) is ...

Ion temperature anisotropy limitation in high beta plasmas

International Nuclear Information System (INIS)

Scime, Earl E.; Keiter, Paul A.; Balkey, Matthew M.; Boivin, Robert F.; Kline, John L.; Blackburn, Melanie; Gary, S. Peter

2000-01-01

Measurements of parallel and perpendicular ion temperatures in the Large Experiment on Instabilities and Anisotropies (LEIA) space simulation chamber display an inverse correlation between the upper bound on the ion temperature anisotropy and the parallel ion beta (β=8πnkT/B 2 ). Fluctuation measurements indicate the presence of low frequency, transverse, electromagnetic waves with wave numbers and frequencies that are consistent with predictions for Alfven Ion Cyclotron instabilities. These observations are also consistent with in situ spacecraft measurements in the Earth's magnetosheath and with a theoretical/computational model that predicts that such an upper bound on the ion temperature anisotropy is imposed by scattering from enhanced fluctuations due to growth of the Alfven ion cyclotron instability. (c) 2000 American Institute of Physics

Influence of magnetic anisotropy on dynamic magnonic crystals created by surface acoustic waves in yttrium iron garnet films

Energy Technology Data Exchange (ETDEWEB)

Kryshtal, R.G.; Medved, A.V., E-mail: avm@ms.ire.rssi.ru

2017-03-15

Experimental results on the investigation of the influence of magnetic crystallographic anisotropy onto parameters of dynamic magnonic crystals arising at surface acoustic wave (SAW) propagation in yttrium iron garnet (YIG) films are presented. The main features of such an influence, as we have shown, are: 1) appearance of extra magnonic band gaps together with the normal magnonic band gap existing without anisotropy, 2) the absence of reflections of the incident surface magnetostatic wave at the frequency of these extra gaps, 3) the same depth for the extra gaps was achieved with a relatively small SAW power, almost by the order of magnitude less than in the case of normal magnonic gaps caused by SAW. A possible explanation of the features is given on the base of inelastic scattering of surface magnetostatic waves by SAW with the transformation of the reflected surface wave to the anisotropic direct volume magnetostatic wave existence of which is due to cubic crystallographic anisotropy in YIG. These results may be useful in designing new devices of information processing. - Highlights: • A new mechanism of creation of dynamic magnonic crystals by SAW propagating in real YIG films with magnetic anisotropy is investigated. • This mechanism is based on inelastic scattering of SMSW by SAW with SMSW transformation to the anisotropic volume magnetostatic wave. • This mechanism brings to creating by SAW additional (extra) magnonic stop bands for SMSW. • The given depth of these band gaps is achieved at SAW powers of the order of magnitude less than in the case of normal magnonic gaps created by SAW in the magnonic crystal without taking into account the anisotropy. • No reflected waves, usually taking place at SMSW propagation at the frequency of normal magnonic gaps, were detected. Such extra gaps look like a magnonic 'black hole' for SMSW. • These new properties of SAW-magnonic crystals, given by the magnetic anisotropy, may be used at creating

Influence of magnetic anisotropy on dynamic magnonic crystals created by surface acoustic waves in yttrium iron garnet films

International Nuclear Information System (INIS)

Kryshtal, R.G.; Medved, A.V.

2017-01-01

Experimental results on the investigation of the influence of magnetic crystallographic anisotropy onto parameters of dynamic magnonic crystals arising at surface acoustic wave (SAW) propagation in yttrium iron garnet (YIG) films are presented. The main features of such an influence, as we have shown, are: 1) appearance of extra magnonic band gaps together with the normal magnonic band gap existing without anisotropy, 2) the absence of reflections of the incident surface magnetostatic wave at the frequency of these extra gaps, 3) the same depth for the extra gaps was achieved with a relatively small SAW power, almost by the order of magnitude less than in the case of normal magnonic gaps caused by SAW. A possible explanation of the features is given on the base of inelastic scattering of surface magnetostatic waves by SAW with the transformation of the reflected surface wave to the anisotropic direct volume magnetostatic wave existence of which is due to cubic crystallographic anisotropy in YIG. These results may be useful in designing new devices of information processing. - Highlights: • A new mechanism of creation of dynamic magnonic crystals by SAW propagating in real YIG films with magnetic anisotropy is investigated. • This mechanism is based on inelastic scattering of SMSW by SAW with SMSW transformation to the anisotropic volume magnetostatic wave. • This mechanism brings to creating by SAW additional (extra) magnonic stop bands for SMSW. • The given depth of these band gaps is achieved at SAW powers of the order of magnitude less than in the case of normal magnonic gaps created by SAW in the magnonic crystal without taking into account the anisotropy. • No reflected waves, usually taking place at SMSW propagation at the frequency of normal magnonic gaps, were detected. Such extra gaps look like a magnonic 'black hole' for SMSW. • These new properties of SAW-magnonic crystals, given by the magnetic anisotropy, may be used at creating

Phase states of a 2D easy-plane ferromagnet with strong inclined anisotropy

International Nuclear Information System (INIS)

Fridman, Yu. A.; Klevets, F. N.; Gorelikov, G. A.; Meleshko, A. G.

2012-01-01

We investigate the spin states of a 2D film exhibiting easy-axis anisotropy and a strong single-ion inclined anisotropy whose axis forms a certain angle with the normal to the film surface. Such a system may have an angular ferromagnetic phase, a spatially inhomogeneous state, and a quadrupole phase, whose realization depends substantially on the inclined anisotropy and the orientation of the wavevector in the film plane.

Tunable anomalous hall effect induced by interfacial catalyst in perpendicular multilayers

Science.gov (United States)

Zhang, J. Y.; Peng, W. L.; Sun, Q. Y.; Liu, Y. W.; Dong, B. W.; Zheng, X. Q.; Yu, G. H.; Wang, C.; Zhao, Y. C.; Wang, S. G.

2018-04-01

The interfacial structures, playing a critical role on the transport properties and the perpendicular magnetic anisotropy in thin films and multilayers, can be modified by inserting an ultrathin functional layer at the various interfaces. The anomalous Hall effect (AHE) in the multilayers with core structure of Ta/CoFeB/X/MgO/Ta (X: Hf or Pt) is tuned by interfacial catalytic engineering. The saturation anomalous Hall resistance (RAH) is increased by 16.5% with 0.1 nm Hf insertion compared with the reference sample without insertion. However, the RAH value is decreased by 9.0% with 0.1 nm Pt insertion. The interfacial states were characterized by the X-ray photoelectron spectroscopy (XPS). The XPS results indicate that a strong bonding between Hf and O for Hf insertion, but no bonding between Pt and O for Pt insertion. The bonding between metal and oxygen leads to various oxygen migration behavior at the interfaces. Therefore, the opposite behavior about the RAH originates from the different oxygen behavior due to various interfacial insertion. This work provides a new approach to manipulate spin transport property for the potential applications.

Origin of variation of shift field via annealing at 400°C in a perpendicular-anisotropy magnetic tunnel junction with [Co/Pt]-multilayers based synthetic ferrimagnetic reference layer

Directory of Open Access Journals (Sweden)

H. Honjo

2017-05-01

Full Text Available We investigated properties of perpendicular-anisotropy magnetic tunnel junctions (p-MTJs with [Co/Pt]-multilayer based synthetic ferrimagnetic reference (SyF layer at elevated annealing temperature Ta from 350°C to 400°C. Shift field HS defined as center field of minor resistance versus magnetic field curve of the MTJs increased with increase of Ta from 350°C to 400°C. The variation of HS is attributed to the variation of saturation magnetic moment in the SyF reference layer. Cross sectional energy dispersive X-ray spectroscopy analysis revealed that Fe element of CoFeB in the reference layer diffuses to Co/Pt multilayers in the SyF reference layer.

Perpendicular exchange coupling effects in ferrimagnetic TbFeCo/GdFeCo hard/soft structures

Science.gov (United States)

Wang, Ke; Wang, Yahong; Ling, Fujin; Xu, Zhan

2018-04-01

Bilayers consisting of magnetically hard TbFeCo and soft GdFeCo alloy were fabricated. Exchange-spring and sharp switching in a step-by-step fashion were observed in the TbFeCo/GdFeCo hard/soft bilayers with increasing GdFeCo thickness. A perpendicular exchange bias field of several hundred Oersteds is observed from the shift of minor loops pinned by TbFeCo layer. The perpendicular exchange energy is derived to be in the range of 0.18-0.30 erg/cm2. The exchange energy is shown to increase with the thickness of GdFeCo layer in the bilayers, which can be attributed to the enhanced perpendicular anisotropy of GdFeCo layer in our experimental range.

Adsorption induced modification of in-plane magnetic anisotropy in epitaxial Co and Fe/Co films on Fe(110)

Science.gov (United States)

Ślezak, M.; Ślezak, T.; Matlak, K.; DróŻdŻ, P.; Korecki, J.

2018-05-01

A study of in-plane magnetic anisotropy (MA) in epitaxial bcc Co films and Fe/Co bilayers on a Fe(110) surface is reported. Surface MA of as-deposited Co films and Fe/Co bilayers strongly depends on the Co (dCo) and Fe (dFe) thickness. Adsorption of residual gases drastically modifies in-plane MA of both Co films and Fe/Co bilayers. We present two dimensional MA maps in the (dCo, dFe) space for both as grown and adsorption-modified films. Our results indicate how to precisely engineer in-plane MA that can be controlled by dCo, dFe and is sensitive to the residual gas adsorption.

Observation of the domain structure in Fe-Au superlattices with perpendicular anisotropy

Energy Technology Data Exchange (ETDEWEB)

Zoladz, M. E-mail: zoladz@uci.agh.edu.pl; Slezak, T.; Wilgocka-Slezak, D.; Spiridis, N.; Korecki, J.; Stobiecki, T. E-mail: stobieck@uci.agh.edu.pl; Roell, K

2004-05-01

Polar Kerr Microscopy was used to visualize characteristic transitions and external magnetic field driven domain structure evolution in a perpendicularly magnetized Fe-Au AF/FM double multilayer structure. Real time imaging performed in the external magnetic field allowed for identification of all sublayers magnetization reversal in accordance with measured PMOKE magnetization curve, showing strong dependence of transition character on the interlayer coupling type and adjacent sublayers magnetization orientation.

Observation of the domain structure in Fe-Au superlattices with perpendicular anisotropy

International Nuclear Information System (INIS)

Zoladz, M.; Slezak, T.; Wilgocka-Slezak, D.; Spiridis, N.; Korecki, J.; Stobiecki, T.; Roell, K.

2004-01-01

Polar Kerr Microscopy was used to visualize characteristic transitions and external magnetic field driven domain structure evolution in a perpendicularly magnetized Fe-Au AF/FM double multilayer structure. Real time imaging performed in the external magnetic field allowed for identification of all sublayers magnetization reversal in accordance with measured PMOKE magnetization curve, showing strong dependence of transition character on the interlayer coupling type and adjacent sublayers magnetization orientation

Mesoscale simulations of confined Nafion thin films

Science.gov (United States)

Vanya, P.; Sharman, J.; Elliott, J. A.

2017-12-01

The morphology and transport properties of thin films of the ionomer Nafion, with thicknesses on the order of the bulk cluster size, have been investigated as a model system to explain the anomalous behaviour of catalyst/electrode-polymer interfaces in membrane electrode assemblies. We have employed dissipative particle dynamics (DPD) to investigate the interaction of water and fluorocarbon chains, with carbon and quartz as confining materials, for a wide range of operational water contents and film thicknesses. We found confinement-induced clustering of water perpendicular to the thin film. Hydrophobic carbon forms a water depletion zone near the film interface, whereas hydrophilic quartz results in a zone with excess water. There are, on average, oscillating water-rich and fluorocarbon-rich regions, in agreement with experimental results from neutron reflectometry. Water diffusivity shows increasing directional anisotropy of up to 30% with decreasing film thickness, depending on the hydrophilicity of the confining material. A percolation analysis revealed significant differences in water clustering and connectivity with the confining material. These findings indicate the fundamentally different nature of ionomer thin films, compared to membranes, and suggest explanations for increased ionic resistances observed in the catalyst layer.

Effect of Cu buffer layer on magnetic anisotropy of cobalt thin films deposited on MgO(001 substrate

Directory of Open Access Journals (Sweden)

Syed Sheraz Ahmad

2016-11-01

Full Text Available Cobalt thin films with 5 nm thickness were prepared on single-crystal MgO (001 substrates with different thickness Cu buffer (0 nm, 5 nm, 10 nm, 20 nm. The structure, magnetic properties and transport behaviors were investigated by employing low-energy-electron-diffraction (LEED, magneto-optical Kerr effect (MOKE and anisotropic magnetoresistance (AMR. By comparing the magnetic properties of the sample as-deposited (without Cu buffer layer one with those having the buffer Cu, we found that the magnetic anisotropy was extremely affected by the Cu buffer layer. The magnetic anisotropy of the as-deposited, without buffer layer, sample shows the uniaxial magnetic anisotropy (UMA. We found that the symmetry of the magnetic anisotropy is changed from UMA to four-fold when the thickness of the Cu buffer layer reaches to 20 nm. Meanwhile, the coercivity increased from 49 Oe (without buffer layer to 300 Oe (with 20 nm Cu buffer, in the easy axis direction, as the thickness of the buffer layer increases. Moreover, the magnitudes of various magnetic anisotropy constants were determined from torque curves on the basis of AMR results. These results support the phenomenon shown in the MOKE.

Effect of the growth conditions on the anisotropy, domain structures and the relaxation in Co thin films

Energy Technology Data Exchange (ETDEWEB)

Mallik, Srijani; Mallick, Sougata; Bedanta, Subhankar, E-mail: sbedanta@niser.ac.in

2017-04-15

We report a systematic study on the anisotropy symmetry, magnetic domains and magnetic relaxation behavior in Co thin films deposited on MgO (001) substrate by varying (i) the pre-annealing condition and (ii) the speed of substrate rotation during deposition. Substrate annealing prior to deposition leads to the formation of textured thin films. On contrary Co films prepared without substrate pre-annealing exhibit polycrystalline nature. Surface topography imaged by atomic force microscopy (AFM) depicts a profound effect of growth condition on grain size and its distribution. Magnetic hysteresis measurement along with simultaneous domain imaging has been performed by magneto optic Kerr effect (MOKE) based microscope by varying the angle (ϕ) between the easy axis and the direction of applied magnetic field. We observed the existence of cubic and uniaxial anisotropy due to the presence of substrate annealing and oblique angular deposition, respectively. Along the easy axis, magnetization reversal is governed by 180° domain wall motion via branched domains. However, for easy axis<ϕfilms.

Magnetic properties, domain-wall creep motion, and the Dzyaloshinskii-Moriya interaction in Pt/Co/Ir thin films

Science.gov (United States)

Shepley, Philippa M.; Tunnicliffe, Harry; Shahbazi, Kowsar; Burnell, Gavin; Moore, Thomas A.

2018-04-01

We study the magnetic properties of perpendicularly magnetized Pt/Co/Ir thin films and investigate the domain-wall creep method of determining the interfacial Dzyaloshinskii-Moriya (DM) interaction in ultrathin films. Measurements of the Co layer thickness dependence of saturation magnetization, perpendicular magnetic anisotropy, and symmetric and antisymmetric (i.e., DM) exchange energies in Pt/Co/Ir thin films have been made to determine the relationship between these properties. We discuss the measurement of the DM interaction by the expansion of a reverse domain in the domain-wall creep regime. We show how the creep parameters behave as a function of in-plane bias field and discuss the effects of domain-wall roughness on the measurement of the DM interaction by domain expansion. Whereas modifications to the creep law with DM field and in-plane bias fields have taken into account changes in the energy barrier scaling parameter α , we find that both α and the velocity scaling parameter v0 change as a function of in-plane bias field.

Slow electron contribution to inelastic reflection anisotropy

International Nuclear Information System (INIS)

Podsvirov, O.A.; Kuznetsov, Yu.A.

1980-01-01

Investigated is electron contribution with low energy (up to 1 keV) to the anisotropy of electron inelastic reflection (IRE) from silicon monocrystal (111) within 12-50 keV energy range of primary electrons. Experimental data on IRE anisotropy are presented: delay curves for silicon monocrystal, permitting to separate electrons with the energy up to 1 keV, dependences of IRE anisotropy on the energy of primary electrons for the systems - monocrystalline silicon-amorphous silicon film and delay curves for such systems (film thickness varies from 20 to 2000 A). Suggested is a phenomenologic model, permitting to take into account the contribution of slow electrons to IRE anisotropy: it is supposed, that three groups of electrons take part in the formation of the latter: elastic and inelastic reflected electrons, slow electrons, excited by primary electrons and slow electrons, generated by the reverse flow of the scattered electrons. Contribution of electrons, different by origin, to IRE anisotropy is evaluated in accordance with the experimental data on the basis of this model. It is stated, that slow electrons constitute approximately one half of the IRE anisotropy value, the contribution of both groups of slow electrons being approximately equal

A structural study of effects of NiP seed layer on the magnetic properties of CoCrPt/Ti/NiP perpendicular magnetic films

CERN Document Server

Sun, C J; Wang, J P; Soo, E W; Noh, D Y; Je, J H; Hwu, Y K

2003-01-01

The CoCrPt/Ti/NiP films for perpendicular magnetic recording were studied using X-ray scattering and anomalous X-ray scattering. When the NiP seed layer was used, the long range order of the texture peak of the magnetic film decreased and less Co was associated with this Bragg order. The structural results were consistent with the observed increased coercivity and decreased magnetization due to the increased magnetic grain isolation caused by the presence of NiP seed layer.

Anisotropy and vortex behaviour in BiSrCaCuO thin films and multilayers probed by columnar pinning centers

International Nuclear Information System (INIS)

Raffy, H.; Murrills, C.D.; Pomar, A.; Stiufiuc, G.; Stiufiuc, R.; Li, Z.Z.

2006-01-01

In this paper we review typical mixed state transport results obtained on a variety of Bi 2 Sr 2 Ca n-1 Cu n O y thin films and artificial multilayers, which allowed us to cover the range from low to high anisotropy. The vortex behaviour, 2D or 3D, probed by the pinning properties of columnar defects, is shown to be highly dependant on the anisotropy, and therefore on the microstructure of the system. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (Abstract Copyright [2006], Wiley Periodicals, Inc.)

Enzyme entrapment in polyaniline films observed via fluorescence anisotropy and antiquenching

Science.gov (United States)

Nemzer, Louis R.; McCaffrey, Marisa; Epstein, Arthur J.

2014-05-01

The facile entrapment of oxidoreductase enzymes within polyaniline polymer films by inducing hydrophobic collapse using phosphate buffered saline (PBS) has been shown to be a cost-effective method for fabricating organic biosensors. Here, we use fluorescence anisotropy measurements to verify enzyme immobilization and subsequent electron donation to the polymer matrix, both prerequisites for an effective biosensor. Specifically, we measure a three order of magnitude decrease in the ratio of the fluorescence to rotational lifetimes. In addition, the observed fluorescence antiquenching supports the previously proposed model that the polymer chain assumes a severely coiled conformation when exposed to PBS. These results help to empirically reinforce the theoretical basis previously laid out for this biosensing platform.

Fast switching and signature of efficient domain wall motion driven by spin-orbit torques in a perpendicular anisotropy magnetic insulator/Pt bilayer

Science.gov (United States)

Avci, Can Onur; Rosenberg, Ethan; Baumgartner, Manuel; Beran, Lukáš; Quindeau, Andy; Gambardella, Pietro; Ross, Caroline A.; Beach, Geoffrey S. D.

2017-08-01

We report fast and efficient current-induced switching of a perpendicular anisotropy magnetic insulator thulium iron garnet by using spin-orbit torques (SOT) from the Pt overlayer. We first show that, with quasi-DC (10 ms) current pulses, SOT-induced switching can be achieved with an external field as low as 2 Oe, making TmIG an outstanding candidate to realize efficient switching in heterostructures that produce moderate stray fields without requiring an external field. We then demonstrate deterministic switching with fast current pulses (≤20 ns) with an amplitude of ˜1012 A/m2, similar to all-metallic structures. We reveal that, in the presence of an initially nucleated domain, the critical switching current is reduced by up to a factor of five with respect to the fully saturated initial state, implying efficient current-driven domain wall motion in this system. Based on measurements with 2 ns-long pulses, we estimate the domain wall velocity of the order of ˜400 m/s per j = 1012 A/m2.

Dynamics and morphology of chiral magnetic bubbles in perpendicularly magnetized ultra-thin films

Science.gov (United States)

Sarma, Bhaskarjyoti; Garcia-Sanchez, Felipe; Nasseri, S. Ali; Casiraghi, Arianna; Durin, Gianfranco

2018-06-01

We study bubble domain wall dynamics using micromagnetic simulations in perpendicularly magnetized ultra-thin films with disorder and Dzyaloshinskii-Moriya interaction. Disorder is incorporated into the material as grains with randomly distributed sizes and varying exchange constant at the edges. As expected, magnetic bubbles expand asymmetrically along the axis of the in-plane field under the simultaneous application of out-of-plane and in-plane fields. Remarkably, the shape of the bubble has a ripple-like part which causes a kink-like (steep decrease) feature in the velocity versus in-plane field curve. We show that these ripples originate due to the nucleation and interaction of vertical Bloch lines. Furthermore, we show that the Dzyaloshinskii-Moriya interaction field is not constant but rather depends on the in-plane field. We also extend the collective coordinate model for domain wall motion to a magnetic bubble and compare it with the results of micromagnetic simulations.

Magnetic properties and configuration of Fe{sub 50}Pt{sub 50*x}Rh{sub x} films

Energy Technology Data Exchange (ETDEWEB)

Fenske, Jochen; Lott, Dieter; Schreyer, Andreas [Helmholt-Zentrum, Geesthacht (Germany); Schmidt, Wolfgang; Schmalzl, Karin [IFF Forschungszentrum, Juelich (Germany); JCNS at ILL (France); Mankey, Gary J. [MINT Center, University of Alabama (United States); Klose, Frank [Ansto, Bragg Institute (Australia); Tartakowskaya, Helena [Institute for Magnetism, National Accademy of Scinece (Ukraine)

2011-07-01

Ordered FePt alloys with L1{sub 0} structure are known as materials with FM order and a high magnetic moment of Fe providing a large magnetization. The large atomic number of Pt on the other hand results in a high magnetic anisotropy. If grown in thin films, the high anisotropy often results in perpendicular magnetization which is the preferred orientation for current magnetic recording media. One way to control the magnetic properties in these materials is through the introduction of a third element into the crystal matrix e.g. Rh. When Rh is added to replace Pt in the equiatomic alloy, new magnetic phases emerge. Here we present neutron diffraction studies on the magnetic properties of different 200nm thick Fe{sub 50}Pt{sub 50*x}Rh{sub x} films in dependence of the temperature and external magnetic fields. Additional resonant x-ray measurements on the Fe and Pt absorption edges provide additional information about the magnetic moments on these sites.

Magnetic switching, relaxation, and domain structure of a Co/Si(111) film

Science.gov (United States)

Baird, M. J.; Bland, J. A. C.; Gu, E.; Ives, A. J. R.; Schumann, F. O.; Hughes, H. P.

1993-11-01

We have used scanning magneto-optic Kerr effect (MOKE) microscopy to investigate the magnetic relaxation of a polycrystalline hcp 125 Å Co/Si(111) film with planar uniaxial anisotropy, on time scales between 10 and 2400 s and with a spatial resolution of 15 μm. In a static magnetic field slightly less than the coercive field and applied along the easy axis direction, domains develop and the magnetization reversal proceeds via displacements of 180° domain walls. Microscopic images of this metastable state allow the 180° domains to be identified by calibration of the MOKE signal with respect to that for the saturated magnetization states. The 180° reversed domains are observed to grow in the direction of the field in the form of narrow fingers, extending via short Barkhausen jumps, randomly spaced in time over the entire time-scale range investigated, with typical distances between pinning sites of the order of microns. This reversal behavior is qualitatively similar to that reported for Au/Co perpendicular anisotropy films a few monolayers thick.

Anisotropies in sputtered FeCoV films and FeCoV/Ti:N multilayers

Energy Technology Data Exchange (ETDEWEB)

Clemens, D.; Vananti, A.; Terrier, C.; Boeni, P.; Schnyder, B.; Tixier, S.; Horisberger, M. [Paul Scherrer Inst. (PSI), Villigen (Switzerland)

1997-09-01

SQUID and MOKE magnetometry as well as mechanical and X-ray stress analysis have been used in order to prove the magnetostrictive nature of the anisotropy in Fe{sub 0.50}Co{sub 0.48}V{sub 0.02} films and Fe{sub 0.50}Co{sub 0.48}V{sub 0.02} /Ti:N multilayers. The investigation stresses on the dependence on the sputter gas pressure and on the thickness of the deposited layer. (author) 1 fig., 6 refs.

Role of the magnetic anisotropy in organic spin valves

Directory of Open Access Journals (Sweden)

V. Kalappattil

2017-09-01

Full Text Available Magnetic anisotropy plays an important role in determining the magnetic functionality of thin film based electronic devices. We present here, the first systematic study of the correlation between magnetoresistance (MR response in organic spin valves (OSVs and magnetic anisotropy of the bottom ferromagnetic electrode over a wide temperature range (10 K–350 K. The magnetic anisotropy of a La0.67Sr0.33MnO3 (LSMO film epitaxially grown on a SrTiO3 (STO substrate was manipulated by reducing film thickness from 200 nm to 20 nm. Substrate-induced compressive strain was shown to drastically increase the bulk in-plane magnetic anisotropy when the LSMO became thinner. In contrast, the MR response of LSMO/OSC/Co OSVs for many organic semiconductors (OSCs does not depend on either the in-plane magnetic anisotropy of the LSMO electrodes or their bulk magnetization. All the studied OSV devices show a similar temperature dependence of MR, indicating a similar temperature-dependent spinterface effect irrespective of LSMO thickness, resulting from the orbital hybridization of carriers at the OSC/LSMO interface.

Photoinduced domain structures in monocrystalline films of yttrium-iron garnets

International Nuclear Information System (INIS)

Doroshenko, R.A.; Vladimirov, I.V.; Setchenkov, M.S.

1988-01-01

Results of investigating the domain structure in Y 3 Fe 5 O 12 epitaxial films under polarized light effect are presented. The domain structure was observed using Faraday effect at 80 K, crystallographic directions were determined by X-ray method. The sample structure is shown to consist of macrodomains, which parallel boundaries are oriented on (011), (110), (101) and are reoriented under the light effect, therewith easiest magnetization axes are brought about perpendicular to vector E of the affecting light. When explaining such changes in domain structure elastic stresses and induced anisotropy of elastic nature must be taken accout of

Role of Ta-spacer layer on tuning the tilt angle magnetic anisotropy of L1{sub 1}-CoPt/Ta/NiFe exchange springs

Energy Technology Data Exchange (ETDEWEB)

Saravanan, P., E-mail: psdrdo@gmail.com [Defence Metallurgical Research Laboratory, Hyderabad 500058 (India); Talapatra, A.; Mohanty, J. [Department of Physics, Indian Institute of Technology Hyderabad, Hyderabad 502285 (India); Hsu, Jen-Hwa, E-mail: jhhsu@phys.ntu.edu.tw [Department of Physics, National Taiwan University, Taipei 106, Taiwan (China); Kamat, S.V. [Defence Metallurgical Research Laboratory, Hyderabad 500058 (India)

2017-06-15

Highlights: • Role of Ta-spacer layer in L1{sub 1}-CoPt(10 nm)/Ta//NiFe(4 nm) trilayers was investigated. • Domain size increased at the expense of magnetic phase contrast with increasing t{sub Ta}. • Tilt angle magnetization increased from 43° to 77° upon increasing t{sub Ta} (0–2.5 nm). • Micromagnetic studies confirmed the existence of tilted magnetic anisotropy. • Ta-spacer is effective in preserving competing anisotropies of CoPt and NiFe-layers. - Abstract: L1{sub 1}-CoPt/Ta/NiFe trilayers are chosen as model films for probing the role of spacer layer on tuning the tilt angle magnetization (θ{sub M}) in such exchange springs. For this purpose, a non-magnetic layer (Ta) with varying thickness (t{sub Ta}) from 0 to 2.5 nm was inserted between 10-nm thick CoPt film exhibiting strong perpendicular magnetic anisotropy (PMA) and 4-nm thick NiFe film having in-plane magnetic anisotropy (IMA). With the insertion of Ta-spacer, the magnetic hysteresis loops become more and more tilted as t{sub Ta} increases. Upon increasing the t{sub Ta} from 0 to 2.5 nm, the estimated SQR{sub ⊥} (=M{sub r⊥}/M{sub s⊥}) from the M–H loops is found to decrease moderately; while the θ{sub M} increases significantly from 43° to 77°. MFM images revealed maze-like domain patterns and the domain size tends to increase at the expense of magnetic phase contrast with increasing t{sub Ta}. Micro-magnetic simulation of tilt in the anisotropy axis with respect to the bare CoPt-layer showed a trend similar to that of those observed with the M–H loops obtained by VSM measurements. The results of present study suggest that the insertion of Ta-spacer is not only beneficial in terms of preserving the competing anisotropies such as PMA and IMA of CoPt and NiFe-layers respectively through weakened exchange coupling; but also, act as an appropriate means for realizing tunable tilted magnetic anisotropy in the L1{sub 1}-CoPt/NiFe exchange springs.

Model of inter-cell interference phenomenon in 10 nm magnetic tunnel junction with perpendicular anisotropy array due to oscillatory stray field from neighboring cells

Science.gov (United States)

Ohuchida, Satoshi; Endoh, Tetsuo

2018-06-01

In this paper, we propose a new model of inter-cell interference phenomenon in a 10 nm magnetic tunnel junction with perpendicular anisotropy (p-MTJ) array and investigated the interference effect between a program cell and unselected cells due to the oscillatory stray field from neighboring cells by Landau–Lifshitz–Gilbert micromagnetic simulation. We found that interference brings about a switching delay in a program cell and excitation of magnetization precession in unselected cells even when no programing current passes through. The origin of interference is ferromagnetic resonance between neighboring cells. During the interference period, the precession frequency of the program cell is 20.8 GHz, which synchronizes with that of the theoretical precession frequency f = γH eff in unselected cells. The disturbance strength of unselected cells decreased to be inversely proportional to the cube of the distance from the program cell, which is in good agreement with the dependence of stray field on the distance from the program cell calculated by the dipole approximation method.

Angular tuning of the magnetic birefringence in rippled cobalt films

Energy Technology Data Exchange (ETDEWEB)

Arranz, Miguel A., E-mail: MiguelAngel.Arranz@uclm.es [Facultad de Ciencias y Tecnologías Químicas, Universidad de Castilla-La Mancha, Avda. Camilo J. Cela 10, 13071 Ciudad Real (Spain); Colino, José M. [Instituto de Nanociencia, Nanotecnología y Materiales Moleculares, Universidad de Castilla-La Mancha, Campus de la Fábrica de Armas, 45071 Toledo (Spain)

2015-06-22

We report the measurement of magnetically induced birefringence in rippled Co films. For this purpose, the magneto-optical properties of ion beam eroded ferromagnetic films were studied using Kerr magnetometry and magnetic birefringence in the transmitted light intensity. Upon sufficient ion sculpting, these ripple surface nanostructures developed a defined uniaxial anisotropy in the in-plane magnetization, finely tuning the magnetic birefringence effect. We have studied its dependence on the relative orientation between the ripple direction and the magnetic field, and found this effect to be dramatically correlated with the capability to neatly distinguish the mechanisms for the in-plane magnetization reversal, i.e., rotation and nucleation. This double refraction corresponds univocally to the two magnetization axes, parallel and perpendicular to the ripples direction. We have also observed that tuned birefringence in stack assemblies of rippled Co films, which enables us to technically manipulate the number and direction of refraction axes.

Angular tuning of the magnetic birefringence in rippled cobalt films

International Nuclear Information System (INIS)

Arranz, Miguel A.; Colino, José M.

2015-01-01

We report the measurement of magnetically induced birefringence in rippled Co films. For this purpose, the magneto-optical properties of ion beam eroded ferromagnetic films were studied using Kerr magnetometry and magnetic birefringence in the transmitted light intensity. Upon sufficient ion sculpting, these ripple surface nanostructures developed a defined uniaxial anisotropy in the in-plane magnetization, finely tuning the magnetic birefringence effect. We have studied its dependence on the relative orientation between the ripple direction and the magnetic field, and found this effect to be dramatically correlated with the capability to neatly distinguish the mechanisms for the in-plane magnetization reversal, i.e., rotation and nucleation. This double refraction corresponds univocally to the two magnetization axes, parallel and perpendicular to the ripples direction. We have also observed that tuned birefringence in stack assemblies of rippled Co films, which enables us to technically manipulate the number and direction of refraction axes

Electric anisotropy in high density polyethylene + carbon black composites induced by mechanical deformation

Energy Technology Data Exchange (ETDEWEB)

Vigueras-Santiago, E; Hernandez-Lopez, S; Camacho-Lopez, M A; Lara-Sanjuan, O, E-mail: eviguerass@uaemex.m [Laboratorio de Investigacion y Desarrollo de Materiales Avanzados (LIDMA), Facultad de Quimica, UAEM. Paseo Colon esq. con Paseo Tollocan, s/n. C.P. 50000, Toluca (Mexico)

2009-05-01

High density polyethylene + carbon black composites with electrical anisotropy was studied. Electrical anisotropy was induced by uniaxial mechanical deformation and injection moulding. We show that anisotropy depends on the carbon black concentration and percentage deformation. Resistivity had the highest anisotropy resistivity around the percolation threshold. Perpendicular resistivity showed two magnitude orders higher than parallel resistivity for injected samples, whereas resistivity showed an inverse behaviour for 100% tensile samples. Both directions were set respect to the deformation axe. Anisotropy could be explained in terms of the molecular deformation (alignment) of the polymer chains as a response of the deformation process originating a redistribution of the carbon black particles in both directions. Alignment of the polymer chains was evidenced by polarized Raman spectroscopy.

Ferromagnetic and paramagnetic magnetization of implanted GaN:Ho,Tb,Sm,Tm films

Energy Technology Data Exchange (ETDEWEB)

Maryško, M., E-mail: marysko@fzu.cz; Hejtmánek, J.; Laguta, V. [Institute of Physics of ASCR v.v.i., Cukrovarnická 10, 162 00 Prague 6 (Czech Republic); Sofer, Z.; Sedmidubský, D.; Šimek, P.; Veselý, M. [Department of Inorganic Chemistry, Institute of Chemical Technology, 166 28 Prague 6 (Czech Republic); Mikulics, M. [Peter Grünberg Institut, PGI-9, Forschung Centrum, Jülich D-52425 (Germany); JARA, Fundamentals of Future Information Technology, D52425 Jülich (Germany); Buchal, C. [Peter Grünberg Institut, PGI-9, Forschung Centrum, Jülich D-52425 (Germany); Macková, A.; Malínský, P. [Nuclear Physics Institute of the ASCR v.v.i., 250 68 Řež (Czech Republic); Department of Physics, Faculty of Science, J.E.Purkinje University, České mládeže, 400 96 Ústí nad Labem (Czech Republic); Wilhelm, R. A. [Helmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, Dresden (Germany); Technische Universität Dresden, 01062 Dresden (Germany)

2015-05-07

The SQUID magnetic measurements were performed on the GaN films prepared by metal-organic vapour phase epitaxy and implanted by Tb{sup 3+}, Tm{sup 3+}, Sm{sup 3+}, and Ho{sup 3+} ions. The sapphire substrate was checked by the electron paramagnetic resonance method which showed a content of Cr{sup 3+} and Fe{sup 3+} impurities. The samples 5 × 5 mm{sup 2} were positioned in the classical straws and within an estimated accuracy of 10{sup −6 }emu, no ferromagnetic moment was detected in the temperature region of 2–300 K. The paramagnetic magnetization was studied for parallel and perpendicular orientation. In the case of GaN:Tb sample, at T = 2 K, a pronounced anisotropy with the easy axis perpendicular to the film was observed which can be explained by the lowest quasi-doublet state of the non-Kramers Tb{sup 3+} ion. The Weiss temperature deduced from the susceptibility data using the Curie-Weiss (C-W) law was found to depend substantially on the magnetic field.

Giant Spin Hall Effect and Switching Induced by Spin-Transfer Torque in a W /Co40Fe40B20/MgO Structure with Perpendicular Magnetic Anisotropy

Science.gov (United States)

Hao, Qiang; Xiao, Gang

2015-03-01

We obtain robust perpendicular magnetic anisotropy in a β -W /Co40Fe40B20/MgO structure without the need of any insertion layer between W and Co40Fe40B20 . This is achieved within a broad range of W thicknesses (3.0-9.0 nm), using a simple fabrication technique. We determine the spin Hall angle (0.40) and spin-diffusion length for the bulk β form of tungsten with a large spin-orbit coupling. As a result of the giant spin Hall effect in β -W and careful magnetic annealing, we significantly reduce the critical current density for the spin-transfer-torque-induced magnetic switching in Co40Fe40B20 . The elemental β -W is a superior candidate for magnetic memory and spin-logic applications.

SQUID-magnetometry on Fe monolayers on GaAs(001) in UHV

Energy Technology Data Exchange (ETDEWEB)

Kebe, T

2006-12-11

This thesis deals with the characterization of the growth and of the magnetic properties of ultrathin Fe films on GaAs(001). In particular, a scanning SQUID (superconducting quantum interference device) magnetometer was used in ultrahigh vacuum (UHV), whose performance has been improved within the scope of this thesis. By probing the magnetic stray field of a magnetized film, the absolute remanent magnetization can be determined with submonolayer sensitivity. In the context of this thesis the magnetic stray field has been calculated analytically. The combined use of SQUID and ferromagnetic resonance (FMR) on the same film in UHV allows for the independent determination of the magnetization and the magnetic anisotropy constants as a function of temperature, film thickness, topography of the substrate and oxygen exposure. The results of this thesis are: 1. The thickness dependent remanent magnetization from 2 to 20 monolayer (ML) Fe on GaAs(001) without cap layer was measured as a function of temperature. 2. The continuous in-plane reorientation of the magnetization (from [1 1 0] to [1 0 0]) of Fe films with increasing film thickness was observed using the scanning SQUID technique and showed good agreement with FMR measurements. 3. The influence of controlled oxygen exposure on the remanent magnetization and the magnetic anisotropy constants of 5 to 16 ML Fe was investigated. A faster reduction of the magnetization is found for the thinner Fe films when the volume of the Fe oxide is taken into consideration. At low oxygen exposure (<10 Langmuir), the perpendicular uniaxial anisotropy constant K{sub 2} {sub perpendicular} {sub to} is reduced by about 40% whereas other anisotropy contributions remain virtually unchanged. In addition, structural investigations using IV-LEED during the oxygen exposure were carried out. 4. An 8.6 ML Fe/GaAs(001) film which was exposed to 25000 L O{sub 2} exhibits a spontaneous magnetization perpendicular to the film plane at low

Buckling of anisotropic films on cylindrical substrates: insights for self-assembly fabrication of 3D helical gears

International Nuclear Information System (INIS)

Yin Jie; Chen Xi

2010-01-01

We propose an effective way of fabricating true three-dimensional helical gear-like structures (with inclined gear teeth) by using self-assembled stress-driven buckling of anisotropic films on compliant cylindrical substrates. Key parameters characterizing the helical undulation profile, in particular the gear teeth number and the inclined teeth angle, are investigated numerically using finite element simulations. Based on the insights from numerical calculations, a simplified theoretical model is established to effectively predict the teeth number. The results show that the anisotropic modulus ratio has a larger effect on the teeth number than the anisotropy angle. The orientation of gear teeth is related to the coupled effects of the anisotropic modulus ratio, anisotropy angle, substrate curvature and substrate aspect ratio. In general, the undulation orientation tends to be perpendicular to the direction of minimum bending stiffness in the film. The findings in this paper provide useful guidance for the self-assembly fabrication of helical gears and other 3D structures at various length scales.

Properties of HTS YBCO thin films deposited on tilted NdGaO{sub 3} substrates

Energy Technology Data Exchange (ETDEWEB)

Nurgaliev, T. [Laboratory of Superconductivity and Cryoelectronics, Institute of Electronics BAS, 72 Tsarigradsko Chausse, 1784 Sofia (Bulgaria)]. E-mail: timur@ie.bas.bg; Donchev, T. [Laboratory of Superconductivity and Cryoelectronics, Institute of Electronics BAS, 72 Tsarigradsko Chausse, 1784 Sofia (Bulgaria); Mateev, E. [Laboratory of Superconductivity and Cryoelectronics, Institute of Electronics BAS, 72 Tsarigradsko Chausse, 1784 Sofia (Bulgaria); Miteva, S. [Laboratory of Superconductivity and Cryoelectronics, Institute of Electronics BAS, 72 Tsarigradsko Chausse, 1784 Sofia (Bulgaria); Mozhaev, P.B. [Institute of Physics and Technology RAS, Nakhimovsky Ave. 36, 117218 Moscow (Russian Federation); Mozhaeva, J.E. [Institute of Physics and Technology RAS, Nakhimovsky Ave. 36, 117218 Moscow (Russian Federation)

2005-03-15

Thin YBa{sub 2}Cu{sub 3}O{sub 7} films were fabricated by 2-opposed DC magnetron sputtering onto NdGaO{sub 3} substrates, tilted from standard (1 1 0) orientation by 0-26 deg , and their surface morphology and electrical characteristics were investigated. Normal state resistivity (at 295 K) and microwave surface resistance (at 77 K and {approx}8 GHz) of the films demonstrated anisotropy, introduced by the tilted substrate, and some improvement of the superconducting parameters of the films was observed at small tilt angles ({theta} {approx} 1.5-3 deg ). The increase of the microwave surface resistance at high tilt angles for the current tracks, perpendicular to the steps of the substrate, was described in the framework of a simple model, which takes into account the complex conductivity of the film and the weak links between the film terraces.

Solar Wind Proton Temperature Anisotropy: Linear Theory and WIND/SWE Observations

Science.gov (United States)

Hellinger, P.; Travnicek, P.; Kasper, J. C.; Lazarus, A. J.

2006-01-01

We present a comparison between WIND/SWE observations (Kasper et al., 2006) of beta parallel to p and T perpendicular to p/T parallel to p (where beta parallel to p is the proton parallel beta and T perpendicular to p and T parallel to p are the perpendicular and parallel proton are the perpendicular and parallel proton temperatures, respectively; here parallel and perpendicular indicate directions with respect to the ambient magnetic field) and predictions of the Vlasov linear theory. In the slow solar wind, the observed proton temperature anisotropy seems to be constrained by oblique instabilities, by the mirror one and the oblique fire hose, contrary to the results of the linear theory which predicts a dominance of the proton cyclotron instability and the parallel fire hose. The fast solar wind core protons exhibit an anticorrelation between beta parallel to c and T perpendicular to c/T parallel to c (where beta parallel to c is the core proton parallel beta and T perpendicular to c and T parallel to c are the perpendicular and parallel core proton temperatures, respectively) similar to that observed in the HELIOS data (Marsch et al., 2004).

Dimensional behavior of the anisotropy in the mixed state of a-axis oriented EuBa{sub 2}Cu{sub 3}O{sub 7}/PrBa{sub 2}Cu{sub 3}O{sub 7} and EuBa{sub 2}Cu{sub 3}O{sub 7}/SrTiO{sub 3} multilayers

Energy Technology Data Exchange (ETDEWEB)

Gonzalez, E.M.; Gonzalez, J.M. [Consejo Superior de Investigaciones Cientificas, Madrid (Spain). Inst. de Ciencia de Materiales; Gomez, A.M. [Dept. de Fisica de Materiales, Univ. Nacional de Educacion a Distancia, Madrid (Spain); Vicent, J.L. [Dept. de Fisica de Materiales, Univ. Complutense, Madrid (Spain)

1998-01-01

Thin films and superconducting/insulating multilayers of the 123-high temperature superconductor (HTS) family have been grown by a sputtering technique. The samples are grown with the so-called a-axis orientation (CuO{sub 2} planes perpendicular to the substrate). The angular dependence of the onset of dissipation (resistivity) has been measured with applied magnetic fields up to 90 kOe. In the a-axis multilayers the artificially induced anisotropy oververcomes the intrinsic anisotropy in a broad angular interval, and the insulating layers break down the dimensional scaling laws above some critical angle ({theta}{sub c}). (orig.) 8 refs.

Consequences of elastic anisotropy in patterned substrate heteroepitaxy.

Science.gov (United States)

Dixit, Gopal Krishna; Ranganathan, Madhav

2018-06-13

The role of elastic anisotropy on quantum dot formation and evolution on a pre-patterned substrate is evaluated within the framework of a continuum model. We first extend the formulation for surface evolution to take elastic anisotropy into account. Using a small slope approximation, we derive the evolution equation and show how it can be numerically implemented up to linear and second order for stripe and egg-carton patterned substrates using an accurate and efficient procedure. The semi--infinite nature of the substrate is used to solve the elasticity problem subject to other boundary conditions at the free surface and at the film--substrate interface. The positioning of the quantum dots with respect to the peaks and valleys of the pattern is explained by a competition between the length scale of the pattern and the wavelength of the Asaro--Tiller--Grinfeld instability, which is also affected by the elastic anisotropy. The alignment of dots is affected by a competition between the elastic anisotropy of the film and the pattern orientation. A domain of pattern inversion, wherein the quantum dots form exclusively in the valleys of the patterns is identified as a function of the average film thickness and the elastic anisotropy, and the time--scale for this inversion as function of height is analyzed. © 2018 IOP Publishing Ltd.

Anisotropic perpendicular axis magnetostriction in twinned TbxDy1-xFe1.95

International Nuclear Information System (INIS)

Teter, J.P.; Wun-Fogle, M.; Clark, A.E.; Mahoney, K.

1990-01-01

The longitudinal magnetostriction (Δl/l) for twinned Tb x Dy 1-x Fe 1.95 material, prepared by the free-standing float-zone method, has been previously measured and found to be very large (2000x10 -6 ) at room temperature. The magnetostrictions for the [111] and [1 bar 10] crystallographic axes perpendicular to the applied stress and magnetic-field [11 bar 2] direction are presented as functions of temperature, applied stress, and applied magnetic field. The temperature range is ±60 degree C centered about the anisotropy compensation temperature of Terfenol-D (+10 degree C). The stress ranges from 2 to 32 MPa and the magnetic field to ±2000 Oe. The temperature dependence of the perpendicular axes magnetostriction is similar to that of the conventional magnetostriction measured parallel to the [11 bar 2] growth axis. Relative values for the saturation magnetostriction exhibit a large anisotropy in the perpendicular direction, ranging from -117% for the [111] to +19% for the [1 bar 10] direction. This ratio stays constant as a function of temperature above the compensation temperature for a given prestress above 8 MPa. The largest absolute value of magnetostriction (2260x10 -6 ) occurs in the [111] direction at 10 degree C at a prestress pressure of 12 MPa. Above this temperature the magnetostriction falls at a rate of -8.5x10 -6 /degree C. The volume magnetostriction is shown to be small and highly sample dependent. All data is consistent with the parent-twin magnetization model and also the magnetostriction values along nonprincipal axes

Synthesis, structure and magnetic properties of crystallographically aligned CuCr{sub 2}Se{sub 4} thin films

Energy Technology Data Exchange (ETDEWEB)

Esters, Marco [Department of Chemistry, University of Oregon, Eugene, OR 97403 (United States); Liebig, Andreas [Institut für Physik, Universität Augsburg, 86159 Augsburg (Germany); Ditto, Jeffrey J.; Falmbigl, Matthias [Department of Chemistry, University of Oregon, Eugene, OR 97403 (United States); Albrecht, Manfred [Institut für Physik, Universität Augsburg, 86159 Augsburg (Germany); Johnson, David C., E-mail: davej@uoregon.edu [Department of Chemistry, University of Oregon, Eugene, OR 97403 (United States)

2016-06-25

We report the low temperature synthesis of highly textured CuCr{sub 2}Se{sub 4} thin films using the modulated elemental reactant (MER) method. The structure of CuCr{sub 2}Se{sub 4} is determined for the first time in its thin film form and exhibits cell parameters that are smaller than found in bulk CuCr{sub 2}Se{sub 4}. X-ray diffraction and precession electron diffraction show a strong degree of crystallographic alignment of the crystallites, where the <111> axis is oriented perpendicular to the substrate surface, while being rotationally disordered within the plane. Temperature and field dependent in-plane and out-of-plane magnetization measurements show that the film is ferromagnetic with a Curie temperature of 406 K CuCr{sub 2}Se{sub 4} synthesized utilizing the MER method shows stronger magnetic anisotropy (effective anisotropy: 1.82 × 10{sup 6} erg cm{sup −3}; shape anisotropy: 1.07 × 10{sup 6} erg cm{sup −3}), with the easy axis lying out of plane, and a larger magnetic moment (6 μ{sub B}/f.u.) than bulk CuCr{sub 2}Se{sub 4}. - Highlights: • Crystallographically aligned, phase pure CuCr{sub 2}Se{sub 4} were synthesized. • The degree of alignment decreases with annealing time. • The films are ferromagnetic with the easy axis along the <111> direction. • The magnetization is larger than bulk CuCr{sub 2}Se{sub 4} or other CuCr{sub 2}Se{sub 4} films made to date.

Aspects of 'low field' magnetotransport in epitaxial thin films of the ferromagnetic metallic oxide SrRuO3

International Nuclear Information System (INIS)

Moran, O.; Saldarriaga, W.; Baca, E.

2007-01-01

Epitaxial thin films of the conductive ferromagnetic oxide SrRuO 3 were grown on an (001) SrTiO 3 (STO) substrate by using DC sputtering technique. The magnetic and magnetoresistive properties of the films were measured by applying the magnetic field both perpendicular (out-of-plane) and parallel (in-plane) to the film plane and ever maintaining the direction of the applied field perpendicular to that of the transport current. The films grown on an (001) STO substrate showed identical magnetization properties in two orthogonal crystallographic directions of the substrate, [100] S and [001] S (in-plane and out-of-plane geometry), which suggests the presence of a multi domain structure within the plane of the film. For such samples, no anisotropic field (hard axis) along de [001]s direction, i.e., perpendicular to the film-plane could be detected. Nevertheless, a distinguishable temperature dependent out-of-plane anisotropic magnetoresistance (MR) along with strong temperature dependent low field hysteretic MR(H) behavior was detected for the studied films. A negative MR ratio MR(T)=[ρ(μ 0 H=9T; T)-ρ( μ 0 H=0T; T)]/ρ( μ 0 H=0T; T) on the order of a few percent, with maximums of ∼6% and ∼4% (right at the Curie temperature, T C ∼160K) was calculated for an in-plane and out-of plane measuring geometry, respectively. In addition there is an equally strong MR effect at low temperatures, which might be related to the temperature dependence of the magnetocrystalline anisotropy together with a magnetization rotation. Both the MR(T) behavior and the achieved values (except for T 3 films grown on 2 o miscut (001) STO substrates with the current parallel to the field and parallel to the [1-bar11] direction, which was identified as the easier axis for magnetization

Temperature dependence of microwave oscillations in magnetic tunnel junctions with a perpendicularly magnetized free layer

International Nuclear Information System (INIS)

Guo, Peng; Feng, Jiafeng; Wei, Hongxiang; Han, Xiufeng; Fang, Bin; Zhang, Baoshun; Zeng, Zhongming

2015-01-01

We experimentally study the temperature dependence of the spin-transfer-torque-induced microwave oscillations in MgO-based magnetic tunnel junction nanopillars with a perpendicularly magnetized free layer. We demonstrate that the oscillation frequency increases rapidly with decreasing temperature, which is mainly ascribed to the temperature dependence of both the saturation magnetization and the perpendicular magnetic anisotropy. We also find that a strong temperature dependence of the output power while a nonmonotonic temperature dependence of spectral linewidth are maintained for a constant dc bias in measured temperature range. Possible mechanisms leading to the different dependences of oscillation frequency, output power, and linewidth are discussed

Structurally Oriented Nano-Sheets in Co Thin Films: Changing Their Anisotropic Physical Properties by Thermally-Induced Relaxation.

Science.gov (United States)

Vergara, José; Favieres, Cristina; Magén, César; de Teresa, José María; Ibarra, Manuel Ricardo; Madurga, Vicente

2017-12-05

We show how nanocrystalline Co films formed by separated oblique nano-sheets display anisotropy in their resistivity, magnetization process, surface nano-morphology and optical transmission. After performing a heat treatment at 270 °C, these anisotropies decrease. This loss has been monitored measuring the resistivity as a function of temperature. The resistivity measured parallel to the direction of the nano-sheets has been constant up to 270 °C, but it decreases when measured perpendicular to the nano-sheets. This suggests the existence of a structural relaxation, which produces the change of the Co nano-sheets during annealing. The changes in the nano-morphology and the local chemical composition of the films at the nanoscale after heating above 270 °C have been analysed by scanning transmission electron microscopy (STEM). Thus, an approach and coalescence of the nano-sheets have been directly visualized. The spectrum of activation energies of this structural relaxation has indicated that the coalescence of the nano-sheets has taken place between 1.2 and 1.7 eV. In addition, an increase in the size of the nano-crystals has occurred in the samples annealed at 400 °C. This study may be relevant for the application in devices working, for example, in the GHz range and to achieve the retention of the anisotropy of these films at higher temperatures.

Structurally Oriented Nano-Sheets in Co Thin Films: Changing Their Anisotropic Physical Properties by Thermally-Induced Relaxation

Directory of Open Access Journals (Sweden)

José Vergara

2017-12-01

Full Text Available We show how nanocrystalline Co films formed by separated oblique nano-sheets display anisotropy in their resistivity, magnetization process, surface nano-morphology and optical transmission. After performing a heat treatment at 270 °C, these anisotropies decrease. This loss has been monitored measuring the resistivity as a function of temperature. The resistivity measured parallel to the direction of the nano-sheets has been constant up to 270 °C, but it decreases when measured perpendicular to the nano-sheets. This suggests the existence of a structural relaxation, which produces the change of the Co nano-sheets during annealing. The changes in the nano-morphology and the local chemical composition of the films at the nanoscale after heating above 270 °C have been analysed by scanning transmission electron microscopy (STEM. Thus, an approach and coalescence of the nano-sheets have been directly visualized. The spectrum of activation energies of this structural relaxation has indicated that the coalescence of the nano-sheets has taken place between 1.2 and 1.7 eV. In addition, an increase in the size of the nano-crystals has occurred in the samples annealed at 400 °C. This study may be relevant for the application in devices working, for example, in the GHz range and to achieve the retention of the anisotropy of these films at higher temperatures.

In situ X-ray diffraction studies on the piezoelectric response of PZT thin films

Energy Technology Data Exchange (ETDEWEB)

Davydok, A., E-mail: davydok@mpie.de [Aix Marseille Université, CNRS, Université de Toulon, IM2NP UMR 7334, 13397 Marseille (France); Max-Planck-Institut für Eisenforschung, Department Structure and Nano-/Micromechanics of Materials, D-40237 Düsseldorf (Germany); Cornelius, T.W. [Aix Marseille Université, CNRS, Université de Toulon, IM2NP UMR 7334, 13397 Marseille (France); Mocuta, C. [SOLEIL Synchrotron, DiffAbs beamline, L' Orme des Merisiers, Saint-Aubin - BP 48, 91192 Gif-sur-Yvette Cedex (France); Lima, E.C. [Universidade Federal do Tocantins, 77500-000 Porto Nacional, TO (Brazil); Araujo, E.B. [Departamento de Fisica e Quimica, Universidade Estadual Paulista, Av. Brasil, 56 Centro, 15385-000 Ilha Solteira, SP (Brazil); Thomas, O. [Aix Marseille Université, CNRS, Université de Toulon, IM2NP UMR 7334, 13397 Marseille (France)

2016-03-31

Piezoelectric properties of randomly oriented self-polarized PbZr{sub 0.50}Ti{sub 0.50}O{sub 3} (PZT) thin films were investigated using in situ synchrotron X-ray diffraction. Possibilities for investigating the piezoelectric effect using micro-sized hard X-ray beams are demonstrated and perspectives for future dynamical measurements on PZT samples with variety of compositions and thicknesses are given. Studies performed on the crystalline [100, 110] directions evidenced piezoelectric anisotropy. The piezoelectric coefficient d{sub 33} was calculated in terms of the lab reference frame (d{sub perp}) and found to be two times larger along the [100] direction than along the [110] direction. The absolute values for the d{sub perp} amount to 120 and 230 pm/V being in good agreement with experimental and theoretical values found in literature for bulk PZT ceramics. - Highlights: • We performed in situ synchrotron X-ray diffraction studies on (PZT) thin films. • We discuss anisotropy of piezo effect in different crystallographic directions. • Perpendicular component Piezo coefficient of thin PZT layer is defined.

Critical currents in columnar vanadium films

International Nuclear Information System (INIS)

Cherkasova, V.G.; Kolin'ko, A.E.; Slatin, A.E.; Fogel, N.Y.

1982-01-01

The angular dependence of the critical current I/sub c/ is studied in columnar vanadium films. In measurements in constant magnetic fields an anomalous maximum I/sub c/ is found on the I/sub c/(theta) curves at arbitrary values of the external magnetic field and temperature, when the magnetic field is perpendicular to the plane of the specimen. The angular dependence of I/sub c/ measured in constant reduced magnetic fields h = H/H/sub c/2(T,theta) shows no singularities in the vicinity of the angle at which the I/sub c/ peak is found in the case H = const, i.e., the critical current is isotropic. This implies that a change in the relative orientation of the vortices and column boundaries produces no change in critical current. The experimental data obtained permit the conclusion that the anisotropy of I/sub c/ observed in a constant magnetic field H is merely a consequence of the anisotropy of the critical magnetic field H/sub c/: the critical current ''tracking'' the magnitude and angular dependence of H/sub c/

Positive temperature coefficient of magnetic anisotropy in polyvinylidene fluoride (PVDF)-based magnetic composites

OpenAIRE

Liu, Yiwei; Wang, Baomin; Zhan, Qingfeng; Tang, Zhenhua; Yang, Huali; Liu, Gang; Zuo, Zhenghu; Zhang, Xiaoshan; Xie, Yali; Zhu, Xiaojian; Chen, Bin; Wang, Junling; Li, Run-Wei

2014-01-01

The magnetic anisotropy is decreased with increasing temperature in normal magnetic materials, which is harmful to the thermal stability of magnetic devices. Here, we report the realization of positive temperature coefficient of magnetic anisotropy in a novel composite combining β-phase polyvinylidene fluoride (PVDF) with magnetostrictive materials (magnetostrictive film/PVDF bilayer structure). We ascribe the enhanced magnetic anisotropy of the magnetic film at elevated temperature to the st...

Anisotropy in electromagnetic field variations and its implication for lateral inhomogeneity of the electrical conductivity structure

Science.gov (United States)

Honkura, Y.; Watanabe, N.; Kaneko, Y.; Oshima, S.

1989-03-01

Two-dimensional analyses of magnetotelluric data provide information on anisotropic response for two different polarization cases; the so-called B-polarization and E-polarization cases. Similar anisotropy should also be observed in the horizontal components of magnetic field variations. On the assumption that a reference station provides the normal magnetic field, transfer functions for the horizontal magnetic fields can be derived in a fashion similar to the impedance analysis for magnetotelluric data. We applied this method to magnetic data obtained at some observation sites in a geothermal area in Japan. Transfer functions for the horizontal magnetic fields exhibit a strong anisotropy with the preferred direction nearly perpendicular to that for the electric field. This result implies the existence of strong electric currents flowing in the direction perpendicular to the above preferred direction for the magnetic field. The present method was also applied to the horizontal components of magnetic field variations observed at the seafloor. In this case, a magnetic observatory on land was taken as the reference station, and attenuation of the amplitude of horizontal magnetic field variation was examined. Anisotropy in attenuation was then found with the preferred direction perpendicular to the axis of the Okinawa trough where the seafloor measurement was undertaken.

Modeling elastic anisotropy in strained heteroepitaxy.

Science.gov (United States)

Dixit, Gopal Krishna; Ranganathan, Madhav

2017-09-20

Using a continuum evolution equation, we model the growth and evolution of quantum dots in the heteroepitaxial Ge on Si(0 0 1) system in a molecular beam epitaxy unit. We formulate our model in terms of evolution due to deposition, and due to surface diffusion which is governed by a free energy. This free energy has contributions from surface energy, curvature, wetting effects and elastic energy due to lattice mismatch between the film and the substrate. In addition to anisotropy due to surface energy which favors facet formation, we also incorporate elastic anisotropy due to an underlying crystal lattice. The complicated elastic problem of the film-substrate system subjected to boundary conditions at the free surface, interface and the bulk substrate is solved by perturbation analysis using a small slope approximation. This permits an analysis of effects at different orders in the slope and sheds new light on the observed behavior. Linear stability analysis shows the early evolution of the instability towards dot formation. The elastic anisotropy causes a change in the alignment of dots in the linear regime, whereas the surface energy anisotropy changes the dot shapes at the nonlinear regime. Numerical simulation of the full nonlinear equations shows the evolution of the surface morphology. In particular, we show, for parameters of the [Formula: see text] [Formula: see text] on Si(0 0 1), the surface energy anisotropy dominates the shapes of the quantum dots, whereas their alignment is influenced by the elastic energy anisotropy. The anisotropy in elasticity causes a further elongation of the islands whose coarsening is interrupted due to [Formula: see text] facets on the surface.

Modeling elastic anisotropy in strained heteroepitaxy

Science.gov (United States)

Krishna Dixit, Gopal; Ranganathan, Madhav

2017-09-01

Using a continuum evolution equation, we model the growth and evolution of quantum dots in the heteroepitaxial Ge on Si(0 0 1) system in a molecular beam epitaxy unit. We formulate our model in terms of evolution due to deposition, and due to surface diffusion which is governed by a free energy. This free energy has contributions from surface energy, curvature, wetting effects and elastic energy due to lattice mismatch between the film and the substrate. In addition to anisotropy due to surface energy which favors facet formation, we also incorporate elastic anisotropy due to an underlying crystal lattice. The complicated elastic problem of the film-substrate system subjected to boundary conditions at the free surface, interface and the bulk substrate is solved by perturbation analysis using a small slope approximation. This permits an analysis of effects at different orders in the slope and sheds new light on the observed behavior. Linear stability analysis shows the early evolution of the instability towards dot formation. The elastic anisotropy causes a change in the alignment of dots in the linear regime, whereas the surface energy anisotropy changes the dot shapes at the nonlinear regime. Numerical simulation of the full nonlinear equations shows the evolution of the surface morphology. In particular, we show, for parameters of the Ge0.25 Si0.75 on Si(0 0 1), the surface energy anisotropy dominates the shapes of the quantum dots, whereas their alignment is influenced by the elastic energy anisotropy. The anisotropy in elasticity causes a further elongation of the islands whose coarsening is interrupted due to facets on the surface.

Perpendicular magnetic tunnel junction with a strained Mn-based nanolayer

Science.gov (United States)

Suzuki, K. Z.; Ranjbar, R.; Okabayashi, J.; Miura, Y.; Sugihara, A.; Tsuchiura, H.; Mizukami, S.

2016-07-01

A magnetic tunnel junction with a perpendicular magnetic easy-axis (p-MTJ) is a key device for spintronic non-volatile magnetoresistive random access memory (MRAM). Co-Fe-B alloy-based p-MTJs are being developed, although they have a large magnetisation and medium perpendicular magnetic anisotropy (PMA), which make it difficult to apply them to a future dense MRAM. Here, we demonstrate a p-MTJ with an epitaxially strained MnGa nanolayer grown on a unique CoGa buffer material, which exhibits a large PMA of more than 5 Merg/cm3 and magnetisation below 500 emu/cm3 these properties are sufficient for application to advanced MRAM. Although the experimental tunnel magnetoresistance (TMR) ratio is still low, first principles calculations confirm that the strain-induced crystal lattice distortion modifies the band dispersion along the tetragonal c-axis into the fully spin-polarised state; thus, a huge TMR effect can be generated in this p-MTJ.

Laser deposition of SnO2 thin films by continuous CO2 laser and their characterizations

International Nuclear Information System (INIS)

Kayed, K.; Awad, F.; Saiof, F.

2003-01-01

There are wide uses of tin oxide thin films, especially in the field of transparent conductors, solar cells, gas sensors and piezoelectric materials. Laser deposition is considered one of the most important techniques followed to obtain these films. In this research, we developed a technique to obtain homogeneous thin films of tin oxide depending on vaporization of pile targets of this oxide by continuous CO 2 laser in the atmosphere, with a fan which guarantees obtaining homogenous films. Some of these films were annealed in different conditions. The optical microscope images revealed the presence of high degree of homogeneity, while the x-ray study showed different crystallization grain orientations which depend on the preparation conditions. The preferred direction is (110). The optical absorption gives information about the value of the effective band gal for the samples before and after thermal annealing. We have found that some films E g =3.2 eV before annealing, and after long annealing they have E g =1.3 eV. In addition, the hard annealed thin films reveal anisotropy in the optical and electrical characteristics, they have different absorption coefficients in two perpendicular directions, also there is an electrical resistance anisotropy along these two directions especially after hard annealing. The E b was 0.73 eV before annealing, it became 0.37 eV for one direction and 0.32 eV for the other direction. (Authors)

Preparation of c-axis perpendicularly oriented ultra-thin L10-FePt films on MgO and VN underlayers

Science.gov (United States)

Futamoto, Masaaki; Shimizu, Tomoki; Ohtake, Mitsuru

2018-05-01

Ultra-thin L10-FePt films of 2 nm average thickness are prepared on (001) oriented MgO and VN underlayers epitaxially grown on base substrate of SrTiO3(001) single crystal. Detailed cross-sectional structures are observed by high-resolution transmission electron microscopy. Continuous L10-FePt(001) thin films with very flat surface are prepared on VN(001) underlayer whereas the films prepared on MgO(001) underlayer consist of isolated L10-FePt(001) crystal islands. Presence of misfit dislocation and lattice bending in L10-FePt material is reducing the effective lattice mismatch with respect to the underlayer to be less than 0.5 %. Formation of very flat and continuous FePt layer on VN underlayer is due to the large surface energy of VN material where de-wetting of FePt material at high temperature annealing process is suppressed under a force balance between the surface and interface energies of FePt and VN materials. An employment of underlayer or substrate material with the lattice constant and the surface energy larger than those of L10-FePt is important for the preparation of very thin FePt epitaxial thin continuous film with the c-axis controlled to be perpendicular to the substrate surface.

Temperature anisotropy instabilities in a plasma containing cold and hot species in the magnetosphere

International Nuclear Information System (INIS)

Renuka, G.; Viswanathan, K.S.

1980-01-01

The nature of convective instability has been investigated for an electromagnetic wave, either right circularly polarised or left circularly polarised, propagating along a magnetic line of force in a plasma whose distribution function exhibits a temperature anisotropy in the hot species, a loss cone structure and a beam of cold electrons or ions travelling along the line of force with velocity V 1 . Detailed numerical calculations have been made using a computer for the growth and decay of the wave for different values of the anisotropy ratio Tsub(perpendicular to)/Tsub(parallel to) delta of the perpendicular and parallel temperatures, the McIlwain parameter L, the loss cone index j, velocity V 1 of the streaming particle and the particle density ratio epsilon. The ranges of the values of epsilon and delta for which the waves becomes unstable have been studied in detail. It is found that wave propagation shows no dependence on the loss cone index but shows very strong dependence on the temperature anisotropy delta. (author)

Increasing the electrical anisotropy of solution-grown PbI2 thin films by addition of CdI2

International Nuclear Information System (INIS)

Ponpon, J.P.; Amann, M.

2010-01-01

In the present study up to 20% CdI 2 has been added to a lead iodide-water solution, which is used to grow PbI 2 polycrystalline thin films. As a result, a significant increase in the anisotropy of the lead iodide film's electrical properties has been observed: the resistivity in the direction parallel to the c-axis reached 10 15 Ω cm but did not change significantly in the orthogonal direction. This behavior can be explained by the modification of the transport properties related to the crystallographic structure of the films along the c-axis. As suggested by thermally stimulated current measurements, only a small number of the Cd atoms incorporated into the PbI 2 lattice could behave as dopants.

Superconducting properties of In-Ge mixture films

International Nuclear Information System (INIS)

Gerber, A.; Deutscher, G.

1987-01-01

We report on measurements of the perpendicular H/sub c//sub perpendicular/ and parallel H/sub c//sub X/ upper critical fields of superconducting In-Ge mixture films in a wide range of In concentrations. The resistivities of the samples varied from about 10 μΩX, corresponding to high In concentration, up to about 1300 μΩ cm, corresponding to an In concentration close to the percolation threshold of the system. The critical temperatures of the samples in a zero external field have also been studied. For high metal concentrations the results have been analyzed and found to fit the predictions of the dirty limit for type-II superconductors. Near the threshold, however, where the normal-state resistivity goes to infinity, the critical fields saturate to a finite value. This result is in accordance with the prediction of percolation theory in the anomalous diffusion regime. As the threshold is approached the anisotropy ratio decreases to a constant value of 1.2 from its homogeneous type-II limit 1.69

Synthesis, Characterization and Photoinduction of Optical Anisotropy in Liquid Crystalline Diblock Azo-Copolymers

DEFF Research Database (Denmark)

Forcén, P; Oriol, L; Sánchez, C

2007-01-01

Diblock copolymers with polymethyl methacrylate and side chain liquid crystalline WC) azopolymethacrylate blocks were synthesized by atom transfer radical polymerization (ATRP). The azobeazene content in these copolymers ranges from 52 to 7 wt %. For an azo conteat dowri to 20% they exhibit a LC...... anisotropy induced in these films by illumination with linearly polarized 488 nm light was studied and the resuits compared with those of the azo homopolymer and of a random copolymer with a similar composition. The formation of azo aggregates inside the azo blocks is strongly reduced in going from...... the homopolymer to the copolymers. Photoinduced azo orientation perpendicular to the 488 nm light polarization was found in aH the polymers. The orientational order parameter is very similar in the homopolymer and in the block copolymers with an azo content down to 20 wt %, while it is much lower in the random...

Large anisotropy in colossal magnetoresistance of charge orbital ordered epitaxial Sm0.5Ca0.5MnO3 films

DEFF Research Database (Denmark)

Chen, Yunzhong; Sun, J.R.; Zhao, J.L.

2009-01-01

We investigated the structure and magnetotransport properties of Sm0.5Ca0.5MnO3 (SCMO) films epitaxially grown on (011)-oriented SrTiO3 substrates, which exhibited clear charge/orbital ordering transition. A significant anisotropy of ~1000 in the colossal magnetoresistance (CMR) effect was observ...

Thickness Dependence of the Dzyaloshinskii-Moriya Interaction in Co2 FeAl Ultrathin Films: Effects of Annealing Temperature and Heavy-Metal Material

Science.gov (United States)

Belmeguenai, M.; Roussigné, Y.; Bouloussa, H.; Chérif, S. M.; Stashkevich, A.; Nasui, M.; Gabor, M. S.; Mora-Hernández, A.; Nicholson, B.; Inyang, O.-O.; Hindmarch, A. T.; Bouchenoire, L.

2018-04-01

The interfacial Dzyaloshinskii-Moriya interaction (IDMI) is investigated in Co2FeAl (CFA) ultrathin films of various thicknesses (0.8 nm ≤tCFA≤2 nm ) grown by sputtering on Si substrates, using Pt, W, Ir, and MgO buffer or/and capping layers. Vibrating sample magnetometry reveals that the magnetization at saturation (Ms ) for the Pt- and Ir-buffered films is higher than the usual Ms of CFA due to the proximity-induced magnetization (PIM) in Ir and Pt estimated to be 19% and 27%, respectively. The presence of PIM in these materials is confirmed using x-ray resonant magnetic reflectivity. Moreover, while no PIM is induced in W, higher PIM is obtained with Pt when it is used as a buffer layer rather than a capping layer. Brillouin light scattering in the Damon-Eshbach geometry is used to investigate the thickness dependences of the IDMI constants from the spin-wave nonreciprocity and the perpendicular anisotropy field versus the annealing temperature. The IDMI sign is found to be negative for Pt /CFA and Ir /CFA , while it is positive for W /CFA . The thickness dependence of the effective IDMI constant for stacks involving Pt and W shows the existence of two regimes similar to that of the perpendicular anisotropy constant due to the degradation of the interfaces as the CFA thickness approaches a critical thickness. The surface IDMI and anisotropy constants of each stack are determined for the thickest samples where a linear thickness dependence of the effective IDMI constant and the effective magnetization are observed. The interface anisotropy and IDMI constants investigated for the Pt /CFA /MgO system show different trends with the annealing temperature. The decrease of the IDMI constant with increasing annealing temperature is probably due to the electronic structure changes at the interfaces, while the increase of the interface anisotropy constant is coherent with the interface quality and disorder enhancement.

Micropore extrusion-induced alignment transition from perpendicular to parallel of cylindrical domains in block copolymers.

Science.gov (United States)

Qu, Ting; Zhao, Yongbin; Li, Zongbo; Wang, Pingping; Cao, Shubo; Xu, Yawei; Li, Yayuan; Chen, Aihua

2016-02-14

The orientation transition from perpendicular to parallel alignment of PEO cylindrical domains of PEO-b-PMA(Az) films has been demonstrated by extruding the block copolymer (BCP) solutions through a micropore of a plastic gastight syringe. The parallelized orientation of PEO domains induced by this micropore extrusion can be recovered to perpendicular alignment via ultrasonication of the extruded BCP solutions and subsequent annealing. A plausible mechanism is proposed in this study. The BCP films can be used as templates to prepare nanowire arrays with controlled layers, which has enormous potential application in the field of integrated circuits.

Determination of perpendicular magnetic anisotropy based on the magnetic droplet nucleation

Science.gov (United States)

Nishimura, Tomoe; Kim, Duck-Ho; Okuno, Takaya; Hirata, Yuushou; Futakawa, Yasuhiro; Yoshikawa, Hiroki; Kim, Sanghoon; Tsukamoto, Arata; Shiota, Yoichi; Moriyama, Takahiro; Ono, Teruo

2018-05-01

We propose an alternative method of determining the magnetic anisotropy field μ0 H K in ferro-/ferrimagnets. On the basis of the droplet nucleation model, there exists linearity between domain-wall (DW) energy density and in-plane magnetic field. We find that the slope is simply represented by μ0 H K and Dzyaloshinskii–Moriya interaction (DMI). By measuring the in-plane magnetic field dependence of the coercivity field, closely corresponding to the DW energy density, a robust value for μ0 H K can be quantified. This robust value can be used to determine μ0 H K over a wide range of values, overcoming the limitations caused by the small strength of the external magnetic field typically used in experiments.

Magnetization reversal in ultrashort magnetic field pulses

International Nuclear Information System (INIS)

Bauer, M.; Lopusnik, R.; Fassbender, J.; Hillebrands, B.

2000-01-01

We report the switching properties of a thin magnetic film subject to an ultrashort, laterally localized magnetic field pulse, obtained by numerical investigations. The magnetization distribution in the film is calculated on a grid assuming Stoner-like coherent rotation within the grid square size. Perpendicularly and in-plane magnetized films exhibit a magnetization reversal due to a 4 ps magnetic field pulse. Outside the central region the pulse duration is short compared to the precession period. In this area the evolution of the magnetization during the field pulse does not depend strongly on magnetic damping and/or pulse shape. However, the final magnetization distribution is affected by the magnetic damping. Although the pulse duration is short compared to the precession period, the time needed for the relaxation of the magnetization to the equilibrium state is rather large. The influence of the different magnetic anisotropy contributions and the magnetic damping parameter enters into the magnetization reversal process. Comparing the case of perpendicular anisotropy with different kinds of in-plane anisotropies, a principal difference is found due to the symmetry of the shape anisotropy with respect to the anisotropy in question

Structure and magnetic properties of Co/Pd multilayers prepared on porous nanotubular TiO{sub 2} substrate

Energy Technology Data Exchange (ETDEWEB)

Maximenko, A. [Institute of Nuclear Physics Polish Academy of Sciences, PL 31-342 Krakow (Poland); Research Institute for Nuclear Problems of Belarusian State University, Bobruiskaya str. 11, 220030 Minsk (Belarus); Marszałek, M., E-mail: marta.marszalek@ifj.edu.pl [Institute of Nuclear Physics Polish Academy of Sciences, PL 31-342 Krakow (Poland); Fedotova, J. [Research Institute for Nuclear Problems of Belarusian State University, Bobruiskaya str. 11, 220030 Minsk (Belarus); Zarzycki, A.; Zabila, Y. [Institute of Nuclear Physics Polish Academy of Sciences, PL 31-342 Krakow (Poland); Kupreeva, O.; Lazarouk, S. [Belarusian State University of Informatics and Radioelectronics, P.Brovka str. 6, 220013 Minsk (Belarus); Kasiuk, J. [Research Institute for Nuclear Problems of Belarusian State University, Bobruiskaya str. 11, 220030 Minsk (Belarus); Zavadski, S. [Belarusian State University of Informatics and Radioelectronics, P.Brovka str. 6, 220013 Minsk (Belarus)

2017-07-15

Highlights: • nanotubular templates of TiO{sub 2} were applied for fabrication of Co/Pd antidot arrays. • morphology of porous multilayers followed the features of the initial template. • the formation of Co0.4Pd0.6 alloy at the Co/Pd interface. • the conservation of perpendicular magnetic anisotropy in the CoPd porous film. • change of the magnetization reversal from domain wall motion to coherent rotation. - Abstract: We used porous nanotubular templates of TiO{sub 2} for fabrication of Co/Pd antidot arrays with strong perpendicular magnetic anisotropy. The morphology of porous multilayers followed the features of the initial template demonstrating a pronounced relief consisting of the cells with periodic pores with small inclination. We confirmed the formation of Co{sub 0.4}Pd{sub 0.6} alloy at the Co/Pd interface. We observed the conservation of perpendicular magnetic anisotropy in the Co/Pd porous film with coercive field H{sub C} = 2.7 kOe, enhanced with respect to the continuous film due to the pinning of magnetic moments on the nanopore edges. From angular dependence of the coercive field H{sub C} we deduced the change of the magnetization reversal mechanism from domain wall motion in the continuous film to the predominantly coherent rotation mechanism in the porous film.

Tuning the electrical and optical anisotropy of a monolayer black phosphorus magnetic superlattice

Science.gov (United States)

Li, X. J.; Yu, J. H.; Luo, K.; Wu, Z. H.; Yang, W.

2018-04-01

We investigate theoretically the effects of modulated periodic perpendicular magnetic fields on the electronic states and optical absorption spectrum in monolayer black phosphorus (phosphorene). We demonstrate that different phosphorene magnetic superlattice (PMS) orientations can give rise to distinct energy spectra, i.e. tuning the intrinsic electronic anisotropy. Rashba spin-orbit coupling (RSOC) develops a spin-splitting energy dispersion in this phosphorene magnetic superlattice. Anisotropic momentum-dependent carrier distributions along/perpendicular to the magnetic strips are demonstrated. The manipulations of these exotic electronic properties by tuning superlattice geometry, magnetic field and the RSOC term are addressed systematically. Accordingly, we find bright-to-dark transitions in the ground-state electron-hole pair transition rate spectrum and the PMS orientation-dependent anisotropic optical absorption spectrum. This feature offers us a practical way of modulating the electronic anisotropy in phosphorene by magnetic superlattice configurations and detecting this modulation capability by using an optical technique.

Electric field modulation of magnetic anisotropy and microwave absorption properties in Fe50Ni50/Teflon composite films

Directory of Open Access Journals (Sweden)

Zhenjun Xia

2016-05-01

Full Text Available Fe50Ni50 nanoparticle films with the size about 6 nm were deposited by a high energetic cluster deposition source. An electric field of about 0 - 40 kV was applied on the sample platform when the films were prepared. The field assisted deposition technique can dramatically induce in-plane magnetic anisotropy. To probe the microwave absorption properties, the Fe50Ni50 nanoparticles were deliberately deposited on the dielectric Teflon sheet. Then the laminated Fe50Ni50/Teflon composites were used to do reflection loss scan. The results prove that the application of electric field is an effective avenue to improve the GHz microwave absorption performance of our magnetic nanoparticles films expressed by the movement of reflection loss peak to high GHz region for the composites.

Temperature-induced transitions between domain structures of ultrathin magnetic films

International Nuclear Information System (INIS)

Polyakova, T.; Zablotskii, V.

2005-01-01

scenarios: i) DS adapts its period to the changing magnetic parameters; ii) conserving the initial domain period and size, DS becomes metastable. Such a metastable state can be frozen by domain wall coercivity and/or by the topological laws restricting the domain wall reconstruction (to delete or create an additional wall one should overcome an energy barrier which is proportional to σ). Reaching a critical metastability degree (temperature) the domain structure undergoes a transition to the equilibrium one and this transition is accompanied by jumps of the domain mean size and period. Temperature dependencies of the domain period as well as temperature intervals of the DSs stability in ultrathin films with perpendicular anisotropy were calculated. The work was supported by Marie Curie Fellowships for 'Transfer of Knowledge' ('NANOMAG-LAB', N 2004-003177). [1] O. Portmann, A. Vaterlaus, and D. Pescia, Nature 422, 701 (2003)

Field driven ferromagnetic phase nucleation and propagation from the domain boundaries in antiferromagnetically coupled perpendicular anisotropy films

Energy Technology Data Exchange (ETDEWEB)

Hauet, Thomas; Gunther, Christian M.; Hovorka, Ondrej; Berger, Andreas; Im, Mi-Young; Fischer, Peter; Hellwig, Olav

2008-12-09

We investigate the reversal process in antiferromagnetically coupled [Co/Pt]{sub X-1}/{l_brace}Co/Ru/[Co/Pt]{sub X-1}{r_brace}{sub 16} multilayer films by combining magnetometry and Magnetic soft X-ray Transmission Microscopy (MXTM). After out-of-plane demagnetization, a stable one dimensional ferromagnetic (FM) stripe domain phase (tiger-tail phase) for a thick stack sample (X=7 is obtained), while metastable sharp antiferromagnetic (AF) domain walls are observed in the remanent state for a thinner stack sample (X=6). When applying an external magnetic field the sharp domain walls of the thinner stack sample transform at a certain threshold field into the FM stripe domain wall phase. We present magnetic energy calculations that reveal the underlying energetics driving the overall reversal mechanisms.

Effect of pressure anisotropy on the m=1 small wavelength modes in Z-pinches

International Nuclear Information System (INIS)

Faghihi, M.

1987-01-01

A generalization of Freidberg's perpendicular MHD model is used to investigate the effect of pressure anisotropy on the small wavelength internal kink (m=1) mode instability in a Z-Pinch. A normal mode analysis of perturbed motion of an incompressible, collisionless and cylindrical plasma is performed. The stability criterion is (rΣB 2 )' ≤ 0, where Σ = 1 - (P parallel - P perpendicular to )/B 2 . It cannot be fulfilled without violation of the fire hose stability condition Σ ≥ 0. (orig.)

Use of bias sputtering to enhance decoupling in oxide composite perpendicular recording media

International Nuclear Information System (INIS)

Lee, Hwan-Soo; Bain, James A.; Laughlin, David E.

2007-01-01

The effects of substrate bias on two types of oxide composite perpendicular recording media CoCrPt-SiO 2 and FePt-MgO were investigated. The use of substrate bias greatly modified the thin film microstructure and resulted in the enhanced grain decoupling in the films. The growth characteristics due to preferential resputtering were interpreted to arise mainly from weak surface bonding to the growing films for nontextured growth, combined with strong cohesion for the textured growth

Strength and Anisotropy in Tournemire Shale: Temperature, Pressure and Time Dependences

Science.gov (United States)

Bonnelye, A.; Schubnel, A.; Zhi, G.; David, C.; Dick, P.

2017-12-01

Time and temperature dependent rock deformation has both scientific and socio-economic implications for natural hazards, the oil and gas industry and nuclear waste disposal. During the past decades, most studies on brittle creep have focused on igneous rocks and porous sedimentary rocks. To our knowledge, only few studies have been carried out on the brittle creep behavior of shale. We conducted a series of creep experiments on shale specimens coming from the French Institute for Nuclear Safety (IRSN) underground research laboratory located in Tournemire, France, under two different temperatures (26°C, 75°C) and confining pressures (10 MPa, 80 MPa), for three orientations (σ1along, perpendicular and 45° to bedding). In these long-term experiments (approximately 10 days), stress and strains were recorded continuously, while ultrasonic acoustic velocities were recorded every 1 15 minutes. The brittle creep failure stress of our Tournemire shale samples was systematically observed 50% higher than its short-term peak strength, with larger final axial strain accumulated. During creep, ultrasonic wave velocities first decreased, and then increased gradually. The magnitude of elastic wave velocity variations showed an important orientation and temperature dependence: velocities measured perpendicular to bedding showed increased variation, variation that was enhanced at higher temperature and higher pressure. The case of complete elastic anisotropy reversal was observed for sample deformed perpendicular to bedding, with amount of axial strain needed to reach anisotropy reversal reduced at higher temperature. SEM observations highlight the competition between crack growth, sealing/healing, and possibly mineral rotation, pressure solution or anisotropic compaction during creep defromation. Our study highlights that the short-term peak strength has little meaning in shale material, which can over-consolidate importantly by `plastic' flow. In addition, we show that elastic

Determination of the Fe magnetic anisotropies and the CoO frozen spins in epitaxial CoO/Fe/Ag(001)

Energy Technology Data Exchange (ETDEWEB)

Meng, J. Li, Y.; Park, J. S.; Jenkins, C. A.; Arenholz, E.; Scholl, A.; Tan, A.; Son, H.; Zhao, H. W.; Hwang, Chanyong; Qiu, Z. Q.

2011-04-28

CoO/Fe/Ag(001) films were grown epitaxially and studied by X-ray Magnetic Circular Dichroism (XMCD) and X-ray Magnetic Linear Dichroism (XMLD). After field cooling along the Fe[100] axis to 80 K, exchange bias, uniaxial anisotropy, and 4-fold anisotropy of the films were determined by hysteresis loop and XMCD measurements by rotating the Fe magnetization within the film plane. The CoO frozen spins were determined by XMLD measurement as a function of CoO thickness.We find that among the exchange bias, uniaxial anisotropy, and 4-fold anisotropy, only the uniaxial magnetic anisotropy follows thickness dependence of the CoO frozen spins.

Heterogeneous seismic anisotropy in the transition zone and uppermost lower mantle: evidence from South America, Izu-Bonin and Japan

Science.gov (United States)

Lynner, Colton; Long, Maureen D.

2015-06-01

Measurements of seismic anisotropy are commonly used to constrain deformation in the upper mantle. Observations of anisotropy at mid-mantle depths are, however, relatively sparse. In this study we probe the anisotropic structure of the mid-mantle (transition zone and uppermost lower mantle) beneath the Japan, Izu-Bonin, and South America subduction systems. We present source-side shear wave splitting measurements for direct teleseismic S phases from earthquakes deeper than 300 km that have been corrected for the effects of upper mantle anisotropy beneath the receiver. In each region, we observe consistent splitting with delay times as large as 1 s, indicating the presence of anisotropy at mid-mantle depths. Clear splitting of phases originating from depths as great as ˜600 km argues for a contribution from anisotropy in the uppermost lower mantle as well as the transition zone. Beneath Japan, fast splitting directions are perpendicular or oblique to the slab strike and do not appear to depend on the propagation direction of the waves. Beneath South America and Izu-Bonin, splitting directions vary from trench-parallel to trench-perpendicular and have an azimuthal dependence, indicating lateral heterogeneity. Our results provide evidence for the presence of laterally variable anisotropy and are indicative of variable deformation and dynamics at mid-mantle depths in the vicinity of subducting slabs.

Structure and magnetoresistive properties of current-perpendicular-to-plane pseudo-spin valves using polycrystalline Co2Fe-based Heusler alloy films

International Nuclear Information System (INIS)

Nakatani, T.M.; Du, Ye; Takahashi, Y.K.; Furubayashi, T.; Hono, K.

2013-01-01

We report current-perpendicular-to-plane giant magnetoresistance (CPP–GMR) of pseudo-spin valves (PSVs) with polycrystalline Co 2 Fe(Al 0.5 Si 0.5 ) (CFAS) and Co 2 Fe(Ga 0.5 Ge 0.5 ) (CFGG) Heusler alloy films. Strongly [0 1 1] textured polycrystalline Heusler alloy films grew on the Ta/Ru/Ag underlayer. Relatively large CPP–GMR values of ΔRA up to 4 mΩ μm 2 and ΔR/R up to 10% were obtained with 5 nm thick Heusler alloy films and Ag spacer layer by annealing CFAS PSV at 450 °C and CFGG PSV at 350 °C. Transmission electron microscopy revealed a flat and sharp interface between the [0 1 1] textured CFAS layers and the [1 1 1] textured Ag spacer layer. Annealing above an optimal temperature for each PSV led to reductions in MR values as a result of the thickening of the spacer layer induced by the Ag diffusion from the outer Ag layers

Magnetic anisotropy of ultrafine 316L stainless steel fibers

Energy Technology Data Exchange (ETDEWEB)

Shyr, Tien-Wei, E-mail: twshyr@fcu.edu.tw [Department of Fiber and Composite Materials, Feng Chia University, No. 100, Wenhwa Road, Seatwen, Taichung 40724, Taiwan, ROC (China); Huang, Shih-Ju [Department of Fiber and Composite Materials, Feng Chia University, No. 100, Wenhwa Road, Seatwen, Taichung 40724, Taiwan, ROC (China); Wur, Ching-Shuei [Department of Physics, National Cheng Kung University, No. 1, University Road, Tainan 70101, Taiwan, ROC (China)

2016-12-01

An as-received 316L stainless steel fiber with a diameter of 20 μm was drawn using a bundle drawing process at room temperature to form ultrafine stainless steel fibers with diameters of 12, 8, and 6 μm. The crystalline phases of the fibers were analyzed using the X-ray diffraction (XRD) profile fitting technique. The grain sizes of γ-austenite and α′-martensite were reduced to nanoscale sizes after the drawing process. XRD analysis and focused ion beam-scanning electron microscope observations showed that the newly formed α′-martensitic grains were closely arrayed in the drawing direction. The magnetic property was measured using a superconducting quantum interference device vibrating sample magnetometer. The magnetic anisotropy of the fibers was observed by applying a magnetic field parallel and perpendicular to the fiber axis. The results showed that the microstructure anisotropy including the shape anisotropy, magnetocrystalline anisotropy, and the orientation of the crystalline phases strongly contributed to the magnetic anisotropy. - Highlights: • The martensitic transformation of the 316L SS fiber occurred during the cold drawn. • The grain sizes of γ-austenite and α′-martensite were reduced to the nanoscale. • The newly formed martensitic grains were closely arrayed in the drawing direction. • The drawing process caused the magnetic easy axis to be aligned with the fiber axis. • The microstructure anisotropy strongly contributed to the magnetic anisotropy.

Linearly and circularly polarized laser photoinduced molecular order in azo dye doped polymer films

Directory of Open Access Journals (Sweden)

Saad Bendaoud

2017-01-01

Full Text Available Photo-induced behavior of Azo Disperse one (AZD1 doped Poly(Methyl MethAcrylate (PMMA using both linear and circular polarized light is studied. The anisotropy is not erased by the circular polarization light. The circular polarization light combined with relatively long lifetime of the cis state in azo dye doped polymers activate all transverse directions of the angular hole burning through the spot in the film inducing anisotropy. Under circular polarized light, there is no orientation perpendicularly to the helex described by the rotating electric field vector, trans molecules reorients in the propagation direction of the pump beam. The polarization state of the probe beam after propagation through the pumped spot depends strongly on the angle of incidence of both pump and probe beams on the input face. In the case where circular polarized pump and probe beams are under the same angle of incidence, the probe beam “sees” anisotropic film as if it is isotropic. Results of this work shows the possibility to reorient azobenzene-type molecules in two orthogonal directions using alternately linearly and circularly polarized beams.

Magnetization switching diagram of a perpendicular synthetic ferrimagnet CoFeB/Ta/CoFeB bilayer

Energy Technology Data Exchange (ETDEWEB)

Koplak, O. [Immanuel Kant Baltic Federal University, 236041 Kaliningrad (Russian Federation); Institute of Problems of Chemical Physics, 142432 Chernogolovka, Moscow (Russian Federation); Talantsev, A. [Institute of Problems of Chemical Physics, 142432 Chernogolovka, Moscow (Russian Federation); Lu, Y.; Hamadeh, A.; Pirro, P.; Hauet, T. [Institut Jean Lamour, UMR 7198 CNRS, Université de Lorraine (France); Morgunov, R., E-mail: morgunov2005@yandex.ru [Institute of Problems of Chemical Physics, 142432 Chernogolovka, Moscow (Russian Federation); Tambov State Technical University, 392000 Tambov (Russian Federation); Mangin, S. [Institut Jean Lamour, UMR 7198 CNRS, Université de Lorraine (France)

2017-07-01

Highlights: • Anisotropy, Zeeman and exchange energy determine sequence of magnetic transitions. • Three temperature ranges manifest different shapes of the hysteresis loop. • The critical transition fields are temperature dependent. - Abstract: Magnetic configurations in synthetic ferrimagnet CoFeB/Ta/CoFeB bilayer with strong perpendicular anisotropy have been systematically studied. Magnetization versus field hysteresis loop has been measured for different temperature ranging from 5 to 300 K. The applied field – temperature (H-T) magnetization switching diagram has been constructed by extracting the different switching fields as a function of temperature. This switching diagram can be well explained by considering the competition between energy barrier of layer’s magnetization reversal, interlayer exchange coupling, and Zeeman energy.

Magnetization switching diagram of a perpendicular synthetic ferrimagnet CoFeB/Ta/CoFeB bilayer

International Nuclear Information System (INIS)

Koplak, O.; Talantsev, A.; Lu, Y.; Hamadeh, A.; Pirro, P.; Hauet, T.; Morgunov, R.; Mangin, S.

2017-01-01

Highlights: • Anisotropy, Zeeman and exchange energy determine sequence of magnetic transitions. • Three temperature ranges manifest different shapes of the hysteresis loop. • The critical transition fields are temperature dependent. - Abstract: Magnetic configurations in synthetic ferrimagnet CoFeB/Ta/CoFeB bilayer with strong perpendicular anisotropy have been systematically studied. Magnetization versus field hysteresis loop has been measured for different temperature ranging from 5 to 300 K. The applied field – temperature (H-T) magnetization switching diagram has been constructed by extracting the different switching fields as a function of temperature. This switching diagram can be well explained by considering the competition between energy barrier of layer’s magnetization reversal, interlayer exchange coupling, and Zeeman energy.

3D Anisotropy of Solar Wind Turbulence, Tubes, or Ribbons?

Science.gov (United States)

Verdini, Andrea; Grappin, Roland; Alexandrova, Olga; Lion, Sonny

2018-01-01

We study the anisotropy with respect to the local magnetic field of turbulent magnetic fluctuations at magnetofluid scales in the solar wind. Previous measurements in the fast solar wind obtained axisymmetric anisotropy, despite that the analysis method allows nonaxisymmetric structures. These results are probably contaminated by the wind expansion that introduces another symmetry axis, namely, the radial direction, as indicated by recent numerical simulations. These simulations also show that while the expansion is strong, the principal fluctuations are in the plane perpendicular to the radial direction. Using this property, we separate 11 yr of Wind spacecraft data into two subsets characterized by strong and weak expansion and determine the corresponding turbulence anisotropy. Under strong expansion, the small-scale anisotropy is consistent with the Goldreich & Sridhar critical balance. As in previous works, when the radial symmetry axis is not eliminated, the turbulent structures are field-aligned tubes. Under weak expansion, we find 3D anisotropy predicted by the Boldyrev model, that is, turbulent structures are ribbons and not tubes. However, the very basis of the Boldyrev phenomenology, namely, a cross-helicity increasing at small scales, is not observed in the solar wind: the origin of the ribbon formation is unknown.

Geometry anisotropy and mechanical property isotropy in titanium foam fabricated by replica impregnation method

International Nuclear Information System (INIS)

Manonukul, Anchalee; Srikudvien, Pathompoom; Tange, Makiko; Puncreobutr, Chedtha

2016-01-01

Polyurethane (PU) foams have both geometry and mechanical property anisotropy. Metal foams, which are manufacturing by investment casting or melt deposition method and using PU foam as a template, also have mechanical property anisotropy. This work studied the mechanical properties in two directions of titanium foam with four different cell sizes fabricated using the replica impregnation method. The two directions are (1) the loading direction parallel to the foaming direction where the cells are elongated (EL direction) and (2) the loading direction perpendicular to the foaming direction where the cell are equiaxed (EQ direction). The results show that the compression responses for both EL and EQ directions are isotropy. Micrographs and X-ray micro-computed tomography show that the degree of geometry anisotropy is not strong enough to results in mechanical property anisotropy.

Geometry anisotropy and mechanical property isotropy in titanium foam fabricated by replica impregnation method

Energy Technology Data Exchange (ETDEWEB)

Manonukul, Anchalee, E-mail: anchalm@mtec.or.th [National Metal and Materials Technology Center (MTEC), National Science and Technology Development Agency (NSTDA), 114 Thailand Science Park, Paholyothin Rd., Klong 1, Klong Luang, Pathumthani 12120 (Thailand); Srikudvien, Pathompoom [National Metal and Materials Technology Center (MTEC), National Science and Technology Development Agency (NSTDA), 114 Thailand Science Park, Paholyothin Rd., Klong 1, Klong Luang, Pathumthani 12120 (Thailand); Tange, Makiko [Taisei Kogyo Thailand Co., Ltd., Room INC2d-409, Innovation Cluster 2 Building, Tower D, 141 Thailand Science Park, Paholyothin Rd., Klong 1, Klong Luang, Pathumthani 12120 (Thailand); Puncreobutr, Chedtha [Department of Metallurgical Engineering, Faculty of Engineering, Chulalongkorn University, Pathumwan, Bangkok 10330 (Thailand)

2016-02-08

Polyurethane (PU) foams have both geometry and mechanical property anisotropy. Metal foams, which are manufacturing by investment casting or melt deposition method and using PU foam as a template, also have mechanical property anisotropy. This work studied the mechanical properties in two directions of titanium foam with four different cell sizes fabricated using the replica impregnation method. The two directions are (1) the loading direction parallel to the foaming direction where the cells are elongated (EL direction) and (2) the loading direction perpendicular to the foaming direction where the cell are equiaxed (EQ direction). The results show that the compression responses for both EL and EQ directions are isotropy. Micrographs and X-ray micro-computed tomography show that the degree of geometry anisotropy is not strong enough to results in mechanical property anisotropy.

Effects of ion temperature anisotropy on the interhemispheric plasma transport during plasmaspheric refilling

International Nuclear Information System (INIS)

Singh, N.; Torr, D.G.

1990-01-01

Effects of temperature anisotropies on the early stage refilling of the outer plasmasphere are studied by solving an appropriate set of hydrodynamic equations. The anisotropies result from the supersonic outflows from the conjugate ionospheres and from the perpendicular ion heating in the equatorial region. The equatorial ion heating affected by wave-particle interaction is included phenomenologically. Even for the equatorial heating associated with moderate wave levels, the mirror force on the flows severely limits the interhemispheric plasma exchange. The temporal evolution of the flow developing in an empty flux tube is characterized by: (1) supersonic plasma outflows from the conjugate ionospheres, (2) reflections of the flows by the mirror force as they begin to penetrate into the opposite hemispheres, (3) formation of shocks in the reflection region and (4) propagations of the shocks to the ionospheres of the origins of the flows. In the quasi-steady state when flow completely subsides, the density distribution in the flux tube shows distinctive large-scale features, determined by the balance between electric, pressure and anisotropy forces. The latter force becomes significant in a broad equatorial region where T t >> T p and also at relatively high geomagnetic latitudes where T t p ; T t and T p are the perpendicular and parallel ion temperatures, respectively

Rapid thermal annealing of FePt and FePt/Cu thin films

Energy Technology Data Exchange (ETDEWEB)

Brombacher, Christoph

2011-01-10

Chemically ordered FePt is one of the most promising materials to reach the ultimate limitations in storage density of future magnetic recording devices due to its high uniaxial magnetocrystalline anisotropy and a corrosion resistance superior to rare-earth based magnets. In this study, FePt and FePt/Cu bilayers have been sputter deposited at room temperature onto thermally oxidized silicon wafers, glass substrates and self-assembled arrays of spherical SiO{sub 2} particles with diameters down to 10 nm. Millisecond flash lamp annealing, as well as conventional rapid thermal annealing was employed to induce the phase transformation from the chemically disordered A1 phase into the chemically ordered L1{sub 0} phase. The influence of the annealing temperature, annealing time and the film thickness on the ordering transformation and (001) texture evolution of FePt films with near equiatomic composition was studied. Whereas flash lamp annealed FePt films exhibit a polycrystalline morphology with high chemical L1{sub 0} order, rapid thermal annealing can lead to the formation of chemically ordered FePt films with (001) texture on amorphous SiO{sub 2}/Si substrates. The resultant high perpendicular magnetic anisotropy and large coercivities up to 40 kOe are demonstrated. Simultaneously to the ordering transformation, rapid thermal annealing to temperatures exceeding 600 C leads to a break up of the continuous FePt film into separated islands. This dewetting behavior was utilized to create regular arrays of FePt nanostructures on SiO{sub 2} particle templates with periods down to 50 nm. The addition of Cu improves the (001) texture formation and chemical ordering for annealing temperatures T{sub a} {<=}600 C. In addition, the magnetic anisotropy and the coercivity of the ternary FePtCu alloy can be effectively tailored by adjusting the Cu content. The prospects of FePtCu based exchange spring media, as well as the magnetic properties of FePtCu nanostructures fabricated

Magnetization process in FePd thin films

International Nuclear Information System (INIS)

Klein, O.; Samson, Y.; Marty, A.; Guillous, S.; Viret, M.; Fermon, C.; Alloul, H.

2001-01-01

A custom made magnetic force microscope is used to study the magnetization process in thin films of FePd throughout the entire hysteresis loop. The 40 nm thick sample has a strong perpendicular anisotropy, which leads to a maze of 80 nm wide stripes of opposite polarity in the remanent state. The growth of M, when H increases, happens through an unwinding of the reversed domain along their axis. Together with the length recession, the reversed domain width also contracts with increasing field. The later effect is estimated by comparison of our images with magneto-optical Kerr measurements. A large disorder in the propagation process of the domain walls is observed. It is also found that the bubble configuration near the saturation field is unstable. [copyright] 2001 American Institute of Physics

Magnetic anisotropy of (Sm, Y)2Fe17Ny compounds

International Nuclear Information System (INIS)

Lu, Y.; Tegus, O.; Li, Q.A.; Tang, N.; Yu, M.J.; Zhao, R.W.; Kuang, J.P.; Yang, F.M.; Zhou, G.F.; Li, X.; Boer, F.R. de

1992-01-01

A study of the crystal structure and the magnetic properties, especially the magnetocrystalline anisotropy of (Sm 1-x Y x ) 2 Fe 17 N y compounds (x = 0, 0.2, 0.4, 0.6, 0.8, and 1.0, 2 2 Zn 17 - or Th 2 Ni 17 -type structure as the original compounds. The Curie temperatures decrease from 750 to 700 K as x increases from 0 to 1. The anisotropy field decreases linearly with increasing yttrium content. The spin reorientation has been investigated by means of high field magnetization measurements, AC-susceptibility measurements and thermomagnetic analysis, combined with X-ray diffraction. The anisotropy constants K 1 , K 2 and K 3 were derived by a phenomenological analysis, using magnetization curves measured in high fields, applied perpendicular to the alignment direction of the powder samples. A tentative spin phase diagram of the series is presented. (orig.)

Field geometry dependence of magnetotransport in epitaxial La2/3Ca1/3MnO3 thin films

International Nuclear Information System (INIS)

Saldarriaga, W.; Baca, E.; Prieto, P.; Moran, O.; Grube, K.; Fuchs, D.; Schneider, R.

2006-01-01

In-plane and out-of-plane magnetoresistance measurements on epitaxial ∼200nm thin (001)-oriented films of high oxygen pressure DC-sputtering grown manganite La 2/3 Ca 1/3 MnO 3 were carried out. Single crystal (001)-SrTiO 3 substrates were used. The samples featured a Curie temperature T C ∼260K and a magnetic moment μ(T->0K)∼3μ B per Mn atom. Magnetocrystalline anisotropy with the easy axes lying on film plane was evidenced by recording the in-plane and out-of-plane magnetization loops at temperatures, below T C , in magnetic field strengths up to 5T. Evidence for anisotropic magnetotransport in these films was provided by electric measurements in a wide temperature range up to 6T magnetic field strengths applied both perpendicular and parallel to the film plane. In both applied magnetic field geometries, current and magnetic field were maintained perpendicular to each other. Neither low-field magnetoresistance nor large magnetoresistance hysteresis were observed on these samples, suggesting that the tensile strain imposed by the substrate in the first monolayers has partially been released. In addition, by rotating the sample 360 o around an axis parallel to film plane, in magnetic fields >=2T, a quadratic sinusoidal dependence of the magnetoresistance on the polar angle θ was observed. These results can be consistently interpreted using a generalized version of the theory of anisotropic magnetoresistance in transition-metal ferromagnets

MHD turbulence in the solar wind: evolution and anisotropy

International Nuclear Information System (INIS)

Horbury, T. S.; Forman, M. A.; Oughton, S.

2005-01-01

Spacecraft measurements in the solar wind offer the opportunity to study magnetohydrodynamic turbulence in a collisionless plasma in great detail. We review some of the key results of the study of this medium: the presence of large amplitude Alfven waves propagating predominantly away from the Sun; the existence of an active turbulent cascade; and intermittency similar to that in neutral fluids. The presence of a magnetic field leads to anisotropy of the fluctuations, which are predominantly perpendicular to this direction, as well as anisotropy of the spectrum. Some models suggest that MHD turbulence can evolve to a state with power predominantly in wave vectors either parallel to the magnetic field (slab fluctuations) or approximately perpendicular to it (2D). We present results of a new, wavelet-based analysis of magnetic field fluctuations in the solar wind, and demonstrate that the 2D component has a spectral index near the Kolmogorov value of 5/3, while slab fluctuations have a spectral index near 2. We also estimate the relative power levels in slab and 2D fluctuations, as well as the level of compressive fluctuations. Deviations of the data from the simple slab/2D model suggest the presence of power in intermediate directions and we compare our data with critical balance models. (Author)

Preliminary results of characteristic seismic anisotropy beneath Sunda-Banda subduction-collision zone

Energy Technology Data Exchange (ETDEWEB)

Wiyono, Samsul H., E-mail: samsul.wiyono@bmkg.go.id [Study Program of Earth Sciences, Faculty of Earth Sciences and Technology, Institute of Technology Bandung, Bandung 40132 (Indonesia); Indonesia’s Agency for Meteorology Climatology and Geophysics, Jakarta 10610 (Indonesia); Nugraha, Andri Dian, E-mail: nugraha@gf.itb.ac.id [Indonesia’s Agency for Meteorology Climatology and Geophysics, Jakarta 10610 (Indonesia); Global Geophysics Research Group, Faculty of Mining and Petroleum Engineering, Institute of Technology Bandung, Bandung 40132, Indonesia, Phone: +62-22 2534137 (Indonesia)

2015-04-24

Determining of seismic anisotropy allowed us for understanding the deformation processes that occured in the past and present. In this study, we performed shear wave splitting to characterize seismic anisotropy beneath Sunda-Banda subduction-collision zone. For about 1,610 XKS waveforms from INATEWS-BMKG networks have been analyzed. From its measurements showed that fast polarization direction is consistent with trench-perpendicular orientation but several stations presented different orientation. We also compared between fast polarization direction with absolute plate motion in the no net rotation and hotspot frame. Its result showed that both absolute plate motion frame had strong correlation with fast polarization direction. Strong correlation between the fast polarization direction and the absolute plate motion can be interpreted as the possibility of dominant anisotropy is in the asthenosphere.

Absence of field anisotropy in the intrinsic ferromagnetic signals of highly oriented pyrolytic graphite

International Nuclear Information System (INIS)

Ballestar, A.; Setzer, A.; Esquinazi, P.; Garcia, N.

2011-01-01

We have measured the magnetization of bulk samples of highly oriented pyrolytic graphite (HOPG) at magnetic fields applied parallel and perpendicular to the graphene layers. Within experimental error the intrinsic ferromagnetic signals of the samples show similar magnetic moments at saturation for the two magnetic field directions, in contrast to recently published data (J. Cervenka et al., Nat. Phys. 5 (2009) 840). To check that the SQUID device provides correctly the small ferromagnetic signals obtained after subtracting the 100 times larger diamagnetic background, we have prepared a sample with a superconducting Pb-film deposited on one of the HOPG surfaces. We show that the field dependence of the measured magnetic moment and after the background subtraction is highly reliable even in the sub-μ emu range providing the real magnetic properties of the embedded small ferromagnetic and superconducting signals. - Research Highlights: → We have measured the magnetization of bulk samples of highly oriented pyrolytic graphite (HOPG) at magnetic fields applied parallel and perpendicular to the graphene layers.→ Within experimental error the intrinsic ferromagnetic signals of the samples show similar magnetic moments at saturation for the two magnetic field directions.→ The absence of magnetic anisotropy of the intrinsic ferromagnetic order found in HOPG samples contrasts recently published data by Cervenka et al., Nat Phys 5, 840 (2009).

Effect of pressure anisotropy on the m=1 small wavelength modes in Z-pinches

Energy Technology Data Exchange (ETDEWEB)

Faghihi, M. (Royal Inst. of Tech., Stockholm, Sweden. Dept. of Plasma Physics and Fusion Research)

1987-05-01

A generalization of Freidberg's perpendicular MHD model is used to investigate the effect of pressure anisotropy on the small wavelength internal kink (m=1) mode instability in a Z-Pinch. A normal mode analysis of perturbed motion of an incompressible, collisionless and cylindrical plasma is performed. The stability criterion is (r{SIGMA}B{sup 2})' {le} 0, where {SIGMA} = 1 - (P{sub parallel} - P{sub perpendicular} {sub to})/B/sup 2/. It cannot be fulfilled without violation of the fire hose stability condition {SIGMA} {ge} 0.

Effects of buffer layer temperature on the magnetic properties of NdFeB thin film magnets

International Nuclear Information System (INIS)

Kim, Y.B.; Cho, S.H.; Kim, H.T.; Ryu, K.S.; Lee, S.H.; Lee, K.H.; Kapustin, G.A.

2004-01-01

Effects of the buffer layer temperature (T b ) on the magnetic properties and microstructure of [Mo/NdFeB/Mo]-type thin films have been investigated. The Mo-buffer layer with low T b is composed of fine grains while that with high T b has coarse grains. The subsequent NdFeB layer also grows with fine or coarse grains following the buffer layer structure. The NdFeB layer grown on a low T b buffer shows high coercivity and strong perpendicular anisotropy. The best magnetic properties of i H c =1.01 MA/m (12.7 kOe), B r =1.31 T (13.1 kG) and BH max =329 kJ/m 3 (41.4 MGOe) were obtained from the film with T b =400 deg. C

Correlation between physical structure and magnetic anisotropy of a magnetic nanoparticle colloid

Science.gov (United States)

Dennis, C. L.; Jackson, A. J.; Borchers, J. A.; Gruettner, C.; Ivkov, R.

2018-05-01

We show the effects of a time-invariant magnetic field on the physical structure and magnetic properties of a colloid comprising 44 nm diameter magnetite magnetic nanoparticles, with a 24 nm dextran shell, in water. Structural ordering in this colloid parallel to the magnetic field occurs simultaneously with the onset of a colloidal uniaxial anisotropy. Further increases in the applied magnetic field cause the nanoparticles to order perpendicular to the field, producing unexpected colloidal unidirectional and trigonal anisotropies. This magnetic behavior is distinct from the cubic magnetocrystalline anisotropy of the magnetite and has its origins in the magnetic interactions among the mobile nanoparticles within the colloid. Specifically, these field-induced anisotropies and colloidal rearrangements result from the delicate balance between the magnetostatic and steric forces between magnetic nanoparticles. These magnetic and structural rearrangements are anticipated to influence applications that rely upon time-dependent relaxation of the magnetic colloids and fluid viscosity, such as magnetic hyperthermia and shock absorption.

Numerical modeling of the 22-year variation of the cosmic ray intensity and anisotropy

International Nuclear Information System (INIS)

Kadokura, A.; Nishida, A.

1986-01-01

We have solved the two-dimensional time-dependent diffusion-convection equation numerically to obtain the distribution and anisotropy of cosmic rays in the heliosphere. We have assumed that the parallel and perpendicular mean free paths are proportional to the particle Larmor radius, and we have treated each proportionality constant (a,b) as a parameter. We have found that the set (a,b) = (4,2) gives the steady state solution compatible with observations on the intensity and the solar diurnal anisotropy of cosmic rays in 0.5- to 10-GeV range as obtained at the earth. This set of (a,b) corresponds to the ratio of the diffusion coefficients D/sub parallel//D/sub perpendicular/ = 10. In our solution the intensity for the (pre-1980) interplanetary magnetic field (IMF) state where the solar magnetic dipole and the angular velocity vector are parallel is higher than for the (post-1980) state where they are antiparallel, while the phase of the diurnal anisotropy is about 15 hours for the parallel state and about 18 hours for the antiparallel state. We have also reproduced the observed small radial gradient for each IMF state. We discuss the nature of the solution in order to understand the effect of the density gradient drift motion on the cosmic ray distribution

Theoretical study on the perpendicular anisotropic magnetoresistance using Rashba-type ferromagnetic model

Science.gov (United States)

Yahagi, Y.; Miura, D.; Sakuma, A.

2018-05-01

We investigated the anisotropic magnetoresistance (AMR) effects in ferromagnetic-metal multi-layers stacked on non-magnetic insulators in the context of microscopic theory. We represented this situation with tight-binding models that included the exchange and Rashba fields, where the Rashba field was assumed to originate from spin-orbit interactions as junction effects with the insulator. To describe the AMR ratios, the DC conductivity was calculated based on the Kubo formula. As a result, we showed that the Rashba field induced both perpendicular and in-plane AMR effects and that the perpendicular AMR effect rapidly decayed with increasing film thickness.

Understanding the magnetic anisotropy in Fe-Si amorphous alloys

Energy Technology Data Exchange (ETDEWEB)

Diaz, J.; Hamdan, N.M.; Jalil, P.; Hussain, Z.; Valvidares, S.M.; Alameda, J.M.

2002-08-01

The origin of the magnetic anisotropy in a very disordered Fe-Si alloy has been investigated. The alloy containing 40 percent at. Si was prepared in the form of a thin film in a DC magnetron sputtering chamber. Structural disorder was obtained from Extended X-ray Absorption Fine Structure spectroscopy. The uniformity and lack of inhomogeneities at a microscopic level was checked by measuring their transverse magnetic susceptibility and hysteresis loops. The orbital component of the magnetic moment was measured by X-ray Magnetic Circular Dichroism spectroscopy. The orbital moment was extraordinary high, 0.4mB. Such a high value contrasted with the relatively small uniaxial anisotropy energy of the thin film (2kJ/m3). This suggests that the cause of the magnetic anisotropy in this alloy was a small degree of correlation in the orientation of the local orbital moments along a preferential direction.

Understanding the magnetic anisotropy in Fe-Si amorphous alloys

International Nuclear Information System (INIS)

Diaz, J.; Hamdan, N.M.; Jalil, P.; Hussain, Z.; Valvidares, S.M.; Alameda, J.M.

2002-01-01

The origin of the magnetic anisotropy in a very disordered Fe-Si alloy has been investigated. The alloy containing 40 percent at. Si was prepared in the form of a thin film in a DC magnetron sputtering chamber. Structural disorder was obtained from Extended X-ray Absorption Fine Structure spectroscopy. The uniformity and lack of inhomogeneities at a microscopic level was checked by measuring their transverse magnetic susceptibility and hysteresis loops. The orbital component of the magnetic moment was measured by X-ray Magnetic Circular Dichroism spectroscopy. The orbital moment was extraordinary high, 0.4mB. Such a high value contrasted with the relatively small uniaxial anisotropy energy of the thin film (2kJ/m3). This suggests that the cause of the magnetic anisotropy in this alloy was a small degree of correlation in the orientation of the local orbital moments along a preferential direction

Domain structures and temperature-dependent spin reorientation transitions in c-axis oriented Co-Cr thin films

International Nuclear Information System (INIS)

Kusinski, Greg J.; Krishnan, Kannan M.; Thomas, Gareth; Nelson, E. C.

2000-01-01

Highly c-axis oriented Co 95 Cr 5 films with perpendicular anisotropy were grown epitaxially on Si (111), using an Ag seed layer, by physical vapor deposition. Films were characterized by x-ray diffraction, transmission electron microscopy (TEM), selected area electron diffraction, and Lorentz microscopy in a TEM. The following epitaxial relationship was confirmed: (111) Si (parallel sign)(111) Ag (parallel sign)(0001) CoCr ;[2(bar sign)20] Si (parallel sign)[2(bar sign)20] Ag (parallel sign)[1(bar sign)100] CoCr . Magnetic domain structures of these films were observed as a function of thickness; t, in the range, 200 Aa c ≅300 Aa, the magnetization was found to be effectively in-plane of the film, and above t c a regular, stripe-like domain pattern with a significant, alternating in sign, perpendicular component was observed. The spin reorientation transitions of the stripe domains to the in-plane magnetization were studied dynamically by observing the domains as a function of temperature by in situ heating up to 350 degree sign C. The critical transition thickness, t c , which is a function of K u and magnetostatic energy, was found to increase with increasing temperature. The stripe-domain period, L observed at room temperature was found to increase gradually with thickness; L=90 nm at t=300 Aa, and L=110 nm at t=700 Aa. (c) 2000 American Institute of Physics

Bias voltage dependence of tunneling magnetoresistance in granular C60–Co films with current-perpendicular-to-plane geometry

International Nuclear Information System (INIS)

Sakai, Seiji; Mitani, Seiji; Matsumoto, Yoshihiro; Entani, Shiro; Avramov, Pavel; Ohtomo, Manabu; Naramoto, Hiroshi; Takanashi, Koki

2012-01-01

Voltage-dependence of the tunneling magnetoresistance effect in the granular C 60 –Co films has been investigated for the samples with the current-perpendicular-to-plane geometry. The transport measurements under this geometry demonstrate that the granular C 60 –Co films show an unusual exponential bias voltage dependence of the magnetoresistance ratio down to zero voltage. Small characteristic energies of less than 10's meV are derived from the temperature dependences of the characteristic voltage in the exponential relationship. Considering the magnitudes of the voltage drop between Co nanoparticles and also the effect of cotunneling on the energy values, the characteristic energies for the voltage-induced degradation of the spin polarization are found to show a satisfactory agreement with that for the thermally-induced one. It can be reasonably expected that the onset of magnetic disorder to the localized d-electron spins at the interface region of the C 60 -based matrix (C 60 –Co compound) with Co nanoparticles leading to the unusual voltage and temperature dependence of the magnetoresistance ratio and the spin polarization at low temperatures. - Highlights: ► Unusual voltage dependence of the TMR effect in granular C 60 –Co films is studied. ► Linear temperature-characteristic voltage dependence in the MR–V relationship. ► Spin-flip scattering by the exchange-coupled d-electron spins at the interface.

Magnetic bubbles and domain evolution in Fe/Gd multilayer nanodots

Science.gov (United States)

Wang, T. T.; Liu, W.; Dai, Z. M.; Zhao, X. T.; Zhao, X. G.; Zhang, Z. D.

2018-04-01

The formation of magnetic bubbles and the domain-evolution processes, induced by a perpendicular magnetic field in Fe/Gd multilayer films and nanodots, have been investigated. At room temperature, the stripe domains in a continuous film transform into magnetic bubbles in an external field, while bubbles form spontaneously in nanodots due to the existence of shape anisotropy. When the temperature decreases to 20 K, the enhancement of the perpendicular magnetic anisotropy of the samples results in an increase of the domain size in the continuous film and the magnetization-reversal behavior of each nanodot becomes independent, and most reversed dots do not depend on each other, indicating the magnetic characteristics of a single domain. The present research provides further understanding of the evolution of magnetic bubbles in the Fe/Gd system and suggests their promising applications in patterned recording materials.

Tilted spin torque-driven ferromagnetic resonance in a perpendicular-analyzer magnetic trilayer

International Nuclear Information System (INIS)

Wang Rixing; He Pengbin; Liu Quanhui; Li Zaidong; Pan Anlian; Zou Bingsuo; Wang Yanguo

2010-01-01

A theoretical study is presented on the current-driven ferromagnetic resonance in the magnetic trilayers. On the basis of the Landau-Lifshitz-Gilbert-Slonczewski equation, we derive the output dc voltage for arbitrary anisotropy in the free and pinned layers by the linearization method. As an example, the resonance spectra of the tilted-polarizer and perpendicular-analyzer trilayer show that the equilibrium position, the resonant linewidth and the resonant location can be tuned by changing the magnitude and the direction of spin torque. The effective damping can be minimized through adjusting the current and the pinned-layer magnetization direction.

Annealing and thickness effects on magnetic properties of Co2FeAl alloy films

Science.gov (United States)

Wang, Ke; Xu, Zhan; Ling, Fujin; Wang, Yahong; Dong, Shuo

2018-03-01

Co2FeAl (CFA) films in a wide thickness range between 2 and 100 nm are sputtered at room temperature. Perpendicular magnetic anisotropy (PMA) is achieved in the annealed structure of Pd/CFA/MgO with CFA thickness ranging between 2.3 and 4.9 nm. PMA as high as 2 × 106 erg/cm3 is demonstrated in the structures annealed in the temperature range between 300 and 350 °C. Positive contributions to the PMA made by the interfaces of Pd/CFA and CFA/MgO are identified. For the as-deposited structure of MgO/CFA/Ta with thick CFA alloy up to 5 nm or above a high effective saturation magnetization of 983.9 ± 30.1 emu/cc is derived from the fitting and an in-plane uniaxial magnetic anisotropy of 104 erg/cm3 in magnitude is revealed by angular dependent magnetic measurements. In addition to the increase in saturation magnetization, a fourfold cubic magnetic anisotropy is found to develop with annealing, in line with the improvement of the crystalline structure confirmed by X-ray diffraction measurements. Out results provide some useful information for the design of the CFA-based magnetoelectronic devices.

Development and anisotropy of three-dimensional turbulence in a current sheet

International Nuclear Information System (INIS)

Onofri, M.; Veltri, P.; Malara, F.

2007-01-01

The nonlinear evolution of three-dimensional reconnection instabilities are studied in a current sheet where many resonant surfaces are simultaneously present at different locations of the simulation domain. The nonlinear evolution produces the development of anisotropic magnetohydrodynamic turbulence. The development of the energy spectrum is followed until the energy is transported to the dissipative length scale and the anisotropy of the spectrum is analyzed. The energy cascade is affected by the Alfven effect and it takes place mainly in the direction perpendicular to the local average magnetic field. Anisotropy is also affected by propagation of perturbations across the main magnetic field, due to the growth of a transverse component related to reconnection. The direction of anisotropy varies with the position in space. The spectral index is different both from what is found in homogeneous isotropic turbulence and from the values predicted for magnetohydrodynamic turbulence with a uniform large-scale magnetic field

Magnetic anisotropies in epitaxial Fe3O4/GaAs(100) patterned structures

International Nuclear Information System (INIS)

Zhang, W.; Zhang, D.; Yuan, S. J.; Huang, Z. C.; Zhai, Y.; Wong, P. K. J.; Wu, J.; Xu, Y. B.

2014-01-01

Previous studies on epitaxial Fe 3 O 4 rings in the context of spin-transfer torque effect have revealed complicated and undesirable domain structures, attributed to the intrinsic fourfold magnetocrystalline anisotropy in the ferrite. In this Letter, we report a viable solution to this problem, utilizing a 6-nm-thick epitaxial Fe 3 O 4 thin film on GaAs(100), where the fourfold magnetocrystalline anisotropy is negligible. We demonstrate that in the Fe 3 O 4 planar wires patterned from our thin film, such a unique magnetic anisotropy system has been preserved, and relatively simple magnetic domain configurations compared to those previous reports can be obtained

Electric-regulated enhanced in-plane uniaxial anisotropy in FeGa/PMN-PT composite using oblique pulsed laser deposition

Science.gov (United States)

Zhang, Yi; Huang, Chaojuan; Turghun, Mutellip; Duan, Zhihua; Wang, Feifei; Shi, Wangzhou

2018-04-01

The FeGa film with in-plane uniaxial magnetic anisotropy was fabricated onto different oriented single-crystal lead magnesium niobate-lead titanate using oblique pulsed laser deposition. An enhanced in-plane uniaxial magnetic anisotropy field of FeGa film can be adjusted from 18 Oe to 275 Oe by tuning the oblique angle and polarizing voltage. The competitive relationship of shape anisotropy and strain anisotropy has been discussed, which was induced by oblique angle and polarizing voltage, respectively. The (100)-oriented and (110)-oriented PMN-PT show completely different characters on voltage-dependent magnetic properties, which could be attributed to various anisotropy directions depended on different strain directions.

Current induced domain wall motion and tilting in Pt/Co/Ta structures with perpendicular magnetic anisotropy in the presence of the Dyzaloshinskii–Moriya interaction

Science.gov (United States)

Yun, Jijun; Li, Dong; Cui, Baoshan; Guo, Xiaobin; Wu, Kai; Zhang, Xu; Wang, Yupei; Mao, Jian; Zuo, Yalu; Xi, Li

2018-04-01

Current induced domain wall motion (CIDWM) was studied in Pt/Co/Ta structures with perpendicular magnetic anisotropy and the Dyzaloshinskii–Moriya interaction (DMI) by the spin-orbit torque (SOT). We measured the strength of DMI and SOT efficiency in Pt/Co/Ta with the variation of the thickness of Ta using a current induced hysteresis loop shift method. The results indicate that the DMI stabilizes a chiral Néel-type domain wall (DW), and the DW motion can be driven by the enhanced large SOT generated from Pt and Ta with opposite signs of spin Hall angle in Pt/Co/Ta stacks. The CIDWM velocity, which is 104 times larger than the field driven DW velocity, obeys a creep law, and reaches around tens of meters per second with current density of ~106 A cm‑2. We also found that the Joule heating accompanied with current also accelerates the DW motion. Meanwhile, a domain wall tilting was observed, which increases with current density increasing. These results can be explained by the spin Hall effect generated from both heavy metals Pt and Ta, inherent DMI, and the current accompanying Joule heating effect. Our results could provide some new designing prospects to move multiple DWs by SOT for achieving racetrack memories.

Perpendicular STT_RAM cell in 8 nm technology node using Co1/Ni3(1 1 1)||Gr2||Co1/Ni3(1 1 1) structure as magnetic tunnel junction

Science.gov (United States)

Varghani, Ali; Peiravi, Ali; Moradi, Farshad

2018-04-01

The perpendicular anisotropy Spin-Transfer Torque Random Access Memory (P-STT-RAM) is considered to be a promising candidate for high-density memories. Many distinct advantages of Perpendicular Magnetic Tunnel Junction (P-MTJ) compared to the conventional in-plane MTJ (I-MTJ) such as lower switching current, circular cell shape that facilitates manufacturability in smaller technology nodes, large thermal stability, smaller cell size, and lower dipole field interaction between adjacent cells make it a promising candidate as a universal memory. However, for small MTJ cell sizes, the perpendicular technology requires new materials with high polarization and low damping factor as well as low resistance area product of a P-MTJ in order to avoid a high write voltage as technology is scaled down. A new graphene-based STT-RAM cell for 8 nm technology node that uses high perpendicular magnetic anisotropy cobalt/nickel (Co/Ni) multilayer as magnetic layers is proposed in this paper. The proposed junction benefits from enough Tunneling Magnetoresistance Ratio (TMR), low resistance area product, low write voltage, and low power consumption that make it suitable for 8 nm technology node.

Structure and superconducting properties of Nb-Zr alloy films made by a high-rate sputtering

International Nuclear Information System (INIS)

Sekine, Hisashi; Inoue, Kiyoshi; Tachikawa, Kyoji

1978-01-01

Superconducting Nb-Zr alloy films have been prepared by a continuous high-rate sputtering on tantalum substrates. A deposition rate of 330 nm/min has been attained. The compositional profile in the Nb-Zr film is quite uniform and the film has nearly the same composition as that of the target. The films deposited in a pure argon atmosphere show a columnar structure grown perpendicular to the substrate. The grain size strongly depends on the substrate temperature. The phase transformations in the Nb-Zr film become more apparent and the structure becomes closer to the equilibrium state as the film is deposited in higher atmosphere pressures and/or at lower target voltages. The superconducting transition temperature T sub(c) of the films is about the same as that of bulk samples. The dependence of T sub(c) on the substrate temperature is explainable on the phase transformations in the film. Critical current density J sub(c) and its anisotropy is closely related to the grain structure of the film. Grain boundaries seem to act as the most predominant flux pinning centers in the films. Effects of oxygen in the sputtering atmosphere on the structure and superconducting properties of the Nb-Zr films have been also investigated. Oxygen significantly decreases the grain size of the film. Oxygen increases J sub(c) but decreases T sub(c) of the film. (auth.)

CL 19: Anisotropy of the electron diffraction from femtosecond Laser excited Bismuth

International Nuclear Information System (INIS)

Zhou, P.; Ligges, M.; Streubuehr, C.; Brazda, Th.; Payer, Th.; Meyer zu Heringdorf, F.; Horn-von Hoegen, M.; Von der Linde, D.

2010-01-01

We report an electron diffraction experiment in Bi in which a linearly polarized E g optical phonon mode is detected after excitation of the material by a femtosecond laser pulse. Bismuth is a semimetal with rhombohedral crystal structure with two atoms in the unit cell. There are two types of optical phonon modes: (i) The totally symmetric A 1g mode which corresponds to a displacement of the atoms along the trigonal (111) direction, and (ii) the doubly degenerate E g mode which represents a motion in the plane perpendicular to (111). The A 1g mode can be coherently excited both by displacive excitation (DE) and by impulsive stimulated Raman scattering (ISRS). Symmetry properties prevent DE of E g modes leaving ISRS as a likely excitation mechanism. We performed time resolved electron diffraction experiments on femtosecond laser excited Bi membranes of 15 nm thickness which were grown on a NaCl crystal and detached by floating in water. The experimental setup is described elsewhere. The fundamental laser beam (800 nm) was used for the excitation of the Bi films. The films had a crystalline structure with the (111) axis perpendicular to the surface. The electron beam passed perpendicular to the surface through the film. In this geometry the diffraction pattern is insensitive to atomic displacements along the (111) direction, i.e. insensitive to A 1g phonon modes. On the other hand, the excitation of E g modes corresponding to atomic displacements in the plane normal to (111) decreases the intensity of particular diffraction orders. The individual cycles of the E g vibrations (duration 475 fs) could not be resolved because our time resolution about 700 fs was not sufficient. In our experiment excitation beam with a fluence of 1 mJ/cm 2 and variable linear polarization was incident from the backside at an angle of 40 degrees (counter propagating electron and laser beam). The diffraction patterns were recorded as a function of the delay time between laser pump and

State diagram of a perpendicular magnetic tunnel junction driven by spin transfer torque: A power dissipation approach

Energy Technology Data Exchange (ETDEWEB)

Lavanant, M. [Institut Jean Lamour, UMR CNRS 7198 – Université de Lorraine, Nancy (France); Department of Physics, New York University, New York, NY 10003 (United States); Petit-Watelot, S. [Institut Jean Lamour, UMR CNRS 7198 – Université de Lorraine, Nancy (France); Kent, A.D. [Department of Physics, New York University, New York, NY 10003 (United States); Mangin, S., E-mail: stephane.mangin@univ-lorraine.fr [Institut Jean Lamour, UMR CNRS 7198 – Université de Lorraine, Nancy (France)

2017-04-15

The state diagram of a magnetic tunnel junction with perpendicularly magnetized electrodes in the presence of spin-transfer torques is computed in a macrospin approximation using a power dissipation model. Starting from the macrospin's energy we determine the stability of energy extremum in terms of power received and dissipated, allowing the consideration of non-conservative torques associated with spin transfer and damping. The results are shown to be in agreement with those obtained by direct integration of the Landau-Lifshitz-Gilbert-Slonczewski equation. However, the power dissipation model approach is faster and shows the reason certain magnetic states are stable, such as states that are energy maxima but are stabilized by spin transfer torque. Breaking the axial system, such as by a tilted applied field or tilted anisotropy, is shown to dramatically affect the state diagrams. Finally, the influence of a higher order uniaxial anisotropy that can stabilize a canted magnetization state is considered and the results are compared to experimental data. - Highlights: • Methods to compute state Diagram (Voltage Versus Field) for perpendicular Magnetic Tunnel Junctions. • Comparison between the conventional LLG model and a model based on Power dissipation to study magnetization reversal in magnetic tunnel junction.

Effects of the shape anisotropy and biasing field on the magnetization reversal process of the diamond-shaped NiFe nano films

Science.gov (United States)

Xu, Sichen; Yin, Jianfeng; Tang, Rujun; Zhang, Wenxu; Peng, Bin; Zhang, Wanli

2017-11-01

The effects of the planar shape anisotropy and biasing field on the magnetization reversal process (MRP) of the diamond-shaped NiFe nano films have been investigated by micromagnetic simulations. Results show that when the length to width ratio (LWR) of the diamond-shaped film is small, the MRP of the diamond-shaped films are sensitive to LWR. But when LWR is larger than 2, a stable domain switching mode is observed which nucleates from the center of the diamond and then expands to the edges. At a fixed LWR, the magnitude of the switching fields decrease with the increase of the biasing field, but the domain switching mode is not affected by the biasing field. Further analysis shows that demagnetization energy dominates over the MRP of the diamond-shaped films. The above LWR dependence of MRP can be well explained by a variation of the shape anisotropic factor with LWR.

Gilbert damping constant of FePd alloy thin films estimated by broadband ferromagnetic resonance

Directory of Open Access Journals (Sweden)

Kawai T.

2014-07-01

Full Text Available Magnetic relaxation of FePd alloy epitaxial thin films with very flat surfaces prepared on MgO(001 substrate are measured by in-plane broadband ferromagnetic resonance (FMR. Magnetic relaxation is investigated as Δω for FMR absorption peak by frequency sweep measurements. ΔH is calculated by using the measured Δω. Gilbert damping constant, α, is estimated by employing a straight line fitting of the resonant frequency dependence of ΔH. The α value for an FePd film deposited at 200 ˚C, which shows disordered A1 structure, is 0.010 and ΔH0, which is frequency independent part of ΔH, is 10 Oe. The α value for a film annealed at 400 ˚C, which shows partially L10 ordered structure (S=0.32, is 0.013, which is slightly larger than that for the disorder A1 structure film. However, ΔH0 for the annealed film is 85 Oe, which is much larger than that for the film with disordered structure. The results show that the magnetic relaxation of the 400 ˚C annealed film is mainly dominated by ΔH0, which is related with magnetic in-homogeneity caused by the appearance of perpendicular anisotropy of partially ordered phase.

Gaps, tears and seismic anisotropy around the subducting slabs of the Antilles

Science.gov (United States)

Schlaphorst, David; Kendall, J.-Michael; Baptie, Brian; Latchman, Joan L.; Tait, Steve

2017-02-01

Seismic anisotropy in and beneath the subducting slabs of the Antilles is investigated using observations of shear-wave splitting. We use a combination of teleseismic and local events recorded at three-component broadband seismic stations on every major island in the area to map anisotropy in the crust, the mantle wedge and the slab/sub-slab mantle. To date this is the most comprehensive study of anisotropy in this region, involving 52 stations from 8 seismic networks. Local event delay times (0.21 ± 0.12 s) do not increase with depth, indicating a crustal origin in anisotropy and an isotropic mantle wedge. Teleseismic delay times are much larger (1.34 ± 0.47 s), with fast shear-wave polarisations that are predominantly parallel to trend of the arc. These observations can be interpreted three ways: (1) the presence of pre-existing anisotropy in the subducting slab; (2) anisotropy due to sub-slab mantle flow around the eastern margin of the nearly stationary Caribbean plate; (3) some combination of both mechanisms. However, there are two notable variations in the trench-parallel pattern of anisotropy - trench-perpendicular alignment is observed in narrow regions east of Puerto Rico and south of Martinique. These observations support previously proposed ideas of eastward sublithospheric mantle flow through gaps in the slab. Furthermore, the pattern of anisotropy south of Martinique, near Saint Lucia is consistent with a previously proposed location for the boundary between the North and South American plates.

The skyrmion-bubble transition in a ferromagnetic thin film

Directory of Open Access Journals (Sweden)

Anne Bernand-Mantel, Lorenzo Camosi, Alexis Wartelle, Nicolas Rougemaille, Michaël Darques, Laurent Ranno

2018-05-01

Full Text Available Magnetic skyrmions and bubbles, observed in ferromagnetic thin films with perpendicular magnetic anisotropy, are topological solitons which differ by their characteristic size and the balance in the energies at the origin of their stabilisation. However, these two spin textures have the same topology and a continuous transformation between them is allowed. In the present work, we derive an analytical model to explore the skyrmion-bubble transition. We evidence a region in the parameter space where both topological soliton solutions coexist and close to which transformations between skyrmion and bubbles are observed as a function of the magnetic field. Above a critical point, at which the energy barrier separating both solutions vanishes, only one topological soliton solution remains, which size can be continuously tuned from micrometer to nanometer with applied magnetic field.

Spin-reorientation and anisotropy of the magnetization in single crystalline Ho2Co15Si2

International Nuclear Information System (INIS)

Tegus, O.

2000-01-01

We have studied the magnetic properties of a Ho 2 Co 15 Si 2 single crystal. The easy magnetization direction is parallel to the c-axis in an extended temperature region below the Curie temperature. A spin-reorientation transition takes place at 323 K, leading to an easy magnetization direction perpendicular to the c-axis below this temperature. We have compared the present results with those obtained previously on various R 2 Co 17 single crystals and found that Si substitution not only leads to a sign reversal in the Co sublattice anisotropy but also leads to a substantial anisotropy of the saturation magnetization. Sign and magnitude of the magnetization anisotropy are conserved during the spin-reorientation transition. (orig.)

Effect of Pressure Anisotropy on the m = 1 Small Wavelength Modes in Z-Pinches

Science.gov (United States)

Faghihi, M.

1987-05-01

A generalization of Freidberg's perpendicular MHD model is used to investigate the effect of pressure anisotropy on the small wavelength internal kink (m = 1) mode instability in a Z-Pinch. A normal mode analysis of perturbed motion of an incompressible, collisionless and cylindrical plasma is performed. The stability criterion is (rΣB2)' = 0.

Pressure anisotropy and radial stress balance in the Jovian neutral sheet

Science.gov (United States)

Paranicas, C. P.; Mauk, B. H.; Krimigis, S. M.

1991-01-01

By examining particle and magnetic field data from the Voyager 1 and 2 spacecraft, signatures were found indicating that the (greater than about 28 keV) particle pressure parallel to the magnetic field is greater than the pressure perpendicular to the field within the nightside neutral sheet (three nightside neutral sheet crossings, with favorable experimental conditions, were used). By incorporating the pressure anisotropy into the calculation of radial forces within the hightside neutral sheet, it is found that (1) force balance is approximately achieved and (2) the anisotropy force term provides the largest contribution of the other particle forces considered (pressure gradients and the corotation centrifugal force). With regard to the problem of understanding the balance of radial forces within the dayside neutral sheet (McNutt, 1984; Mauk and Krimigis, 1987), the nightside pressure anisotropy force is larger than the dayside pressure gradient forces at equivalent radial distances; however, a full accounting of the dayside regions remains to be achieved.

Perpendicular magnetic tunnel junction with thin CoFeB/Ta/Co/Pd/Co reference layer

Energy Technology Data Exchange (ETDEWEB)

Gan, Huadong, E-mail: huadong@avalanche-technology.com; Malmhall, Roger; Wang, Zihui; Yen, Bing K; Zhang, Jing; Wang, Xiaobin; Zhou, Yuchen; Hao, Xiaojie; Jung, Dongha; Satoh, Kimihiro; Huai, Yiming [Avalanche Technology, 46600 Landing Parkway, Fremont, California 94538 (United States)

2014-11-10

Integration of high density spin transfer torque magnetoresistance random access memory requires a thin stack (less than 15 nm) of perpendicular magnetic tunnel junction (p-MTJ). We propose an innovative approach to solve this challenging problem by reducing the thickness and/or moment of the reference layer. A thin reference layer structure of CoFeB/Ta/Co/Pd/Co has 60% magnetic moment of the conventional thick structure including [Co/Pd] multilayers. We demonstrate that the perpendicular magnetization of the CoFeB/Ta/Co/Pd/Co structure can be realized by anti-ferromagnetically coupling to a pinned layer with strong perpendicular anisotropy via Ruderman-Kittel-Kasuya-Yosida exchange interaction. The pMTJ with thin CoFeB/Ta/Co/Pd/Co reference layer has a comparable TMR ratio (near 80%) as that with thick reference layer after annealing at 280 °C. The pMTJ with thin reference layer has a total thickness less than 15 nm, thereby significantly increasing the etching margin required for integration of high density pMTJ array on wafers with form factor of 300 mm and beyond.

Transport current anisotropy in oriented grained bulk YBa2Cu3Ox superconductor

International Nuclear Information System (INIS)

Selvamanickam, V.; Salama, K.

1990-01-01

The anisotropy in transport current density has been studied on bulk YBa 2 Cu 3 O x superconductor. The transport current density measurements were performed on oriented grained YBa 2 Cu 3 O x superconductor with the current aligned at different angles to the a endash b plane. The angular dependence of J c shows a rapid drop when the transport current is misaligned from the a endash b plane at small angles and then a slow decrease at higher angles. An anisotropy ratio of about 25 is observed at 77 K and zero field between the J c along a endash b plane and that perpendicular to the plane

Investigation of the magnetic phase transition in thin Fe{sub 50}Pt{sub 50-x}Rh{sub x} films by neutron diffraction

Energy Technology Data Exchange (ETDEWEB)

Fenske, Jochen; Lott, Dieter; Schreyer, Andreas [GKSS Research Centre, Geesthacht (Germany); Mankey, Gary J. [MINT Center, The University of Alabama, Tuscaloosa, AL (United States); Schmidt, Wolfgang; Schmalzl, Karin [JCNS, Juelich (Germany)

2008-07-01

In the last years perpendicular recording plays a major role in the development of novel magnetic data storage. Here, materials with high anisotropy are used which delivers good thermal stability. However in order to write the bits a high magnetic field is necessary. By the use of soft underlayers the write field can be significant reduced. Fe{sub 50}Pt{sub 50-x}Rh{sub x} is a promising candidate for such an underlayer. Magnetization measurements of the bulk samples for x=10 refer to a antiferromagnetic (AF)/ferromagnetic (FM) phase transition at about 150 K when heated. Additional magnetostriction measurements indicate that the phase transition could also be induced by applying a magnetic field. The FM state lowers the high anisotropy and therefore the high write field. The AF state helps to stabilize the recording media via exchange interaction. For technical applications the use of thin films are essential to save space and costs for the next generation of magnetic storage devices. Here we present results on several thin Fe{sub 50}Pt{sub 50-x}Rh{sub x} films with different concentration of Rh. The films were examined by polarized and unpolarized neutron diffraction in dependence of temperature and magnetic field.

Effect of anisotropy on the magnon energy gap in a two-layer ferromagnetic superlattice

International Nuclear Information System (INIS)

Qiu Rongke; Liang Jing; Li Qingfeng; Zhang Zhidong; Song Panpan; Hong Xiaomin

2009-01-01

The magnon energy bands or spectra in a two-layer ferromagnetic superlattice are studied. It is found that a modulated energy gap exists in the magnon energy band along K x direction perpendicular to the superlattice plane, which is different from the optical magnon gap at K x =0. The anisotropy, the spin quantum numbers and the interlayer exchange couplings all affect the magnon energy gap. If the anisotropy exists, there will be no acoustic energy branch in the system. There is a competition effect of the anisotropy and the spin quantum number on the magnon energy gap. The competition achieves a balance at the zero energy gap, at which the symmetry of the system is higher. The two energy spectra of the two-layer ferromagnetic superlattice are lowered with increasing temperature.

Light scattering of rectangular slot antennas: parallel magnetic vector vs perpendicular electric vector

Science.gov (United States)

Lee, Dukhyung; Kim, Dai-Sik

2016-01-01

We study light scattering off rectangular slot nano antennas on a metal film varying incident polarization and incident angle, to examine which field vector of light is more important: electric vector perpendicular to, versus magnetic vector parallel to the long axis of the rectangle. While vector Babinet’s principle would prefer magnetic field along the long axis for optimizing slot antenna function, convention and intuition most often refer to the electric field perpendicular to it. Here, we demonstrate experimentally that in accordance with vector Babinet’s principle, the incident magnetic vector parallel to the long axis is the dominant component, with the perpendicular incident electric field making a small contribution of the factor of 1/|ε|, the reciprocal of the absolute value of the dielectric constant of the metal, owing to the non-perfectness of metals at optical frequencies.

Anomalous Swelling in Wet-Spin Films of Divalent Calf-Thymus DNA

Science.gov (United States)

Marlowe, R. L.; Lee, S. A.; Rupprecht, A.

2004-03-01

The dimension of wet-spun oriented films of Ca- and MgDNA in the direction perpendicular to the helical axis has been measured using optical microscopy as a function of relative humidity (RH). Earlier work on monovalent DNA films found that the perpendicular dimension increases monotonically with RH. In contrast, both Ca - and MgDNA films display a 15% shrinkage in the perpendicular direction at about 93% RH and expand at higher values of RH.

Highly ordered FEPT and FePd magnetic nano-structures: Correlated structural and magnetic studies

International Nuclear Information System (INIS)

Lukaszew, Rosa Alejandra; Cebollada, Alfonso; Clavero, Cesar; Garcia-Martin, Jose Miguel

2006-01-01

The micro-structure of epitaxial FePt and FePd films grown on MgO (0 0 1) substrates is correlated to their magnetic behavior. The FePd films exhibit high chemical ordering and perpendicular magnetic anisotropy. On the other hand FePt films exhibit low chemical ordering, with nano-grains oriented in two orthogonal directions, forcing the magnetization to remain in the plane of the films

Linking strain anisotropy and plasticity in copper metallization

International Nuclear Information System (INIS)

Murray, Conal E.; Jordan-Sweet, Jean; Priyadarshini, Deepika; Nguyen, Son

2015-01-01

The elastic anisotropy of copper leads to significant variation in the x-ray elastic constants (XEC), which link diffraction-based strain measurements to stress. An accurate depiction of the mechanical response in copper thin films requires a determination of an appropriate grain interaction model that lies between Voigt and Reuss limits. It is shown that the associated XEC weighting fraction, x*, between these limits provides a metric by which strain anisotropy can be quantified. Experimental values of x*, as determined by a linear regression scheme of diffraction data collected from multiple reflections, reveal the degree of strain anisotropy and its dependence on plastic deformation induced during in-situ and ex-situ thermal treatments

Effects of Cr underlayer and Pt buffer layer on the interfacial structure and magnetic characteristics of sputtered FePt films

International Nuclear Information System (INIS)

Sun, A.-C.; Hsu, J.-H.; Huang, H.L.; Kuo, P.C.

2006-01-01

This work develops a new method for growing L1 0 FePt(0 0 1) thin film on a Pt/Cr bilayer using an amorphous glass substrate. Semi-coherent epitaxial growth was initiated from the Cr(0 0 2) underlayer, continued through the Pt(0 0 1) buffer layer, and extended into the L1 0 FePt(0 0 1) magnetic layer. The squareness of the L1 0 FePt film in the presence of both a Cr underlayer and a Pt buffer layer was close to unity as the magnetic field was applied perpendicular to the film plane. The single L1 0 FePt(1 1 1) orientation was observed in the absence of a Cr underlayer. When a Cr underlayer is inserted, the preferred orientation switched from L1 0 FePt(1 1 1) to L1 0 FePt(0 0 1) and the magnetic film exhibited perpendicular magnetic anisotropy. However, in the absence of an Pt intermediate layer, the Cr atoms diffused directly into the FePt magnetic layer and prevented the formation of the L1 0 FePt(0 0 1) preferred orientation. When a Pt buffer layer was introduced between the FePt and Cr underlayer, the L1 0 FePt(0 0 1) peak appeared. The thickness of the Pt buffer layer also substantially affected the magnetic properties and atomic arrangement at the FePt/Pt and Pt/Cr interfaces

Investigation of nanocrystalline thin cobalt films thermally evaporated on Si(100) substrates

Energy Technology Data Exchange (ETDEWEB)

Kozłowski, W., E-mail: wkozl@std2.phys.uni.lodz.pl [Department of Solid State Physics, Faculty of Physics and Applied Informatics, University of Łódź, Pomorska 149/153, 90-236 Łódź (Poland); Balcerski, J.; Szmaja, W. [Department of Solid State Physics, Faculty of Physics and Applied Informatics, University of Łódź, Pomorska 149/153, 90-236 Łódź (Poland); Piwoński, I. [Department of Materials Technology and Chemistry, Faculty of Chemistry, University of Łódź, Pomorska 163, 90-236 Łódź (Poland); Batory, D. [Institute of Materials Science and Engineering, Łódź University of Technology, Stefanowskiego 1/15, 90-924 Łódź (Poland); Miękoś, E. [Department of Inorganic and Analytical Chemistry, Faculty of Chemistry, University of Łódź, Tamka 12, 91-403 Łódź (Poland); and others

2017-03-15

We have made a quantitative study of the morphological and magnetic domain structures of 100 nm thick nanocrystalline cobalt films thermally evaporated on naturally oxidized Si(100) substrates. The morphological structure is composed of densely packed grains with the average grain size (35.6±0.8) nm. The grains exhibit no geometric alignment and no preferred elongation on the film surface. In the direction perpendicular to the film surface, the grains are aligned in columns. The films crystallize mainly in the hexagonal close-packed phase of cobalt and possess a crystallographic texture with the hexagonal axis perpendicular to the film surface. The magnetic domain structure consists of domains forming a maze stripe pattern with the average domain size (102±6) nm. The domains have their magnetizations oriented almost perpendicularly to the film surface. The domain wall energy, the domain wall thickness and the critical diameter for single-domain particle were determined. - Highlights: • 100 nm thick nanocrystalline cobalt films on Si(100) were studied quantitatively. • The grains are densely packed and possess the average size (35.6±0.8) nm. • The films have a texture with the hexagonal axis perpendicular to the film surface. • The magnetic domains form a maze stripe pattern with the average size (102±6) nm. • The domains are magnetized almost perpendicularly to the film surface.

Time scales of bias voltage effects in FE/MgO-based magnetic tunnel junctions with voltage-dependent perpendicular anisotropy

International Nuclear Information System (INIS)

Lytvynenko, Ia.M.; Hauet, T.; Montaigne, F.; Bibyk, V.V.; Andrieu, S.

2015-01-01

Interplay between voltage-induced magnetic anisotropy transition and voltage-induced atomic diffusion is studied in epitaxial V/Fe (0.7 nm)/ MgO/ Fe(5 nm)/Co/Au magnetic tunnel junction where thin Fe soft electrode has in-plane or out-of-plane anisotropy depending on the sign of the bias voltage. We investigate the origin of the slow resistance variation occurring when switching bias voltage in opposite polarity. We demonstrate that the time to reach resistance stability after voltage switching is reduced when increasing the voltage amplitude or the temperature. A single energy barrier of about 0.2 eV height is deduced from temperature dependence. Finally, we demonstrate that the resistance change is not correlated to a change in soft electrode anisotropy. This conclusion contrasts with observations recently reported on analogous systems. - Highlights: • Voltage-induced time dependence of resistance is studied in epitaxial Fe/MgO/Fe. • Resistance change is not related to the bottom Fe/MgO interface. • The effect is thermally activated with an energy barrier of the order of 0.2 eV height

Morphological Evolution of Gyroid-Forming Block Copolymer Thin Films with Varying Solvent Evaporation Rate.

Science.gov (United States)

Wu, Yi-Hsiu; Lo, Ting-Ya; She, Ming-Shiuan; Ho, Rong-Ming

2015-08-05

In this study, we aim to examine the morphological evolution of block copolymer (BCP) nanostructured thin films through solvent evaporation at different rates for solvent swollen polystyrene-block-poly(l-lactide) (PS-PLLA). Interesting phase transitions from disorder to perpendicular cylinder and then gyroid can be found while using a partially selective solvent for PS to swell PS-PLLA thin film followed by solvent evaporation. During the transitions, gyroid-forming BCP thin film with characteristic crystallographic planes of (111)G, (110)G, and (211)G parallel to air surface can be observed, and will gradually transform into coexisting (110)G and (211)G planes, and finally transforms to (211)G plane due to the preferential segregation of constituted block to the surface (i.e., the thermodynamic origin for self-assembly) that affects the relative amount of each component at the air surface. With the decrease on the evaporation rate, the disorder phase will transform to parallel cylinder and then directly to (211)G without transition to perpendicular cylinder phase. Most importantly, the morphological evolution of PS-PLLA thin films is strongly dependent upon the solvent removal rate only in the initial stage of the evaporation process due to the anisotropy of cylinder structure. Once the morphology is transformed back to the isotropic gyroid structure after long evaporation, the morphological evolution will only relate to the variation of the surface composition. Similar phase transitions at the substrate can also be obtained by controlling the ratio of PLLA-OH to PS-OH homopolymers to functionalize the substrate. As a result, the fabrication of well-defined nanostructured thin films with controlled orientation can be achieved by simple swelling and deswelling with controlled evaporation rate.

On the limits of uniaxial magnetic anisotropy tuning by a ripple surface pattern

Energy Technology Data Exchange (ETDEWEB)

Arranz, Miguel A. [Facultad de Ciencias Químicas, Universidad de Castilla-La Mancha, Avda. Camilo J. Cela 10, 13071 Ciudad Real (Spain); Colino, Jose M., E-mail: josemiguel.colino@uclm.es [Instituto de Nanociencia, Nanotecnología y Materiales Moleculares, Universidad de Castilla-La Mancha, Campus de la Fábrica de Armas, 45071 Toledo (Spain); Palomares, Francisco J. [Instituto de Ciencia de Materiales de Madrid, Consejo Superior de Investigaciones Científicas, c/ Sor Juana Inés de la Cruz 3, 28049 Madrid (Spain)

2014-05-14

Ion beam patterning of a nanoscale ripple surface has emerged as a versatile method of imprinting uniaxial magnetic anisotropy (UMA) on a desired in-plane direction in magnetic films. In the case of ripple patterned thick films, dipolar interactions around the top and/or bottom interfaces are generally assumed to drive this effect following Schlömann's calculations for demagnetizing fields of an ideally sinusoidal surface [E. Schlömann, J. Appl. Phys. 41, 1617 (1970)]. We have explored the validity of his predictions and the limits of ion beam sputtering to induce UMA in a ferromagnetic system where other relevant sources of magnetic anisotropy are neglected: ripple films not displaying any evidence of volume uniaxial anisotropy and where magnetocrystalline contributions average out in a fine grain polycrystal structure. To this purpose, the surface of 100 nm cobalt films grown on flat substrates has been irradiated at fixed ion energy, fixed ion fluency but different ion densities to make the ripple pattern at the top surface with wavelength Λ and selected, large amplitudes (ω) up to 20 nm so that stray dipolar fields are enhanced, while the residual film thickness t = 35–50 nm is sufficiently large to preserve the continuous morphology in most cases. The film-substrate interface has been studied with X-ray photoemission spectroscopy depth profiles and is found that there is a graded silicon-rich cobalt silicide, presumably formed during the film growth. This graded interface is of uncertain small thickness but the range of compositions clearly makes it a magnetically dead layer. On the other hand, the ripple surface rules both the magnetic coercivity and the uniaxial anisotropy as these are found to correlate with the pattern dimensions. Remarkably, the saturation fields in the hard axis of uniaxial continuous films are measured up to values as high as 0.80 kG and obey a linear dependence on the parameter ω{sup 2}/Λ/t in quantitative

Morphology of SiO2 films as a key factor in alignment of liquid crystals with negative dielectric anisotropy

Directory of Open Access Journals (Sweden)

Volodymyr Tkachenko

2016-11-01

Full Text Available Control of liquid crystal (LC orientation using a proper SiO2 alignment layer is essential for the optimization of vertically aligned nematic (VAN displays. With this aim, we studied the optical anisotropy of thin SiO2 films by generalized ellipsometry as a function of deposition angle. The columnar SiO2 structure orientation measured by a noninvasive ellipsometry technique is reported for the first time, and its morphology influence on the LC alignment is demonstrated for large deposition angles.

Transport current anisotropy in oriented grained bulk YBa2Cu3O(x) superconductor

International Nuclear Information System (INIS)

Selvamanickam, V.; Salama, K.

1990-01-01

The anisotropy in transport current density has been studied on bulk YBa2Cu3O(x) superconductor. The transport current density measurements were performed on oriented grained YBa2Cu3O(x) superconductor with the current aligned at different angles to the a-b plane. The angular dependence of Jc shows a rapid drop when the transport current is misaligned from the a-b plane at small angles and then a slow decrease at higher angles. An anisotropy ratio of about 25 is observed at 77 K and zero field between the Jc along a-b plane and that perpendicular to the plane. 15 refs

RAPID COSMIC-RAY ACCELERATION AT PERPENDICULAR SHOCKS IN SUPERNOVA REMNANTS

Energy Technology Data Exchange (ETDEWEB)

Takamoto, Makoto; Kirk, John G., E-mail: mtakamoto@eps.s.u-tokyo.ac.jp, E-mail: john.kirk@mpi-hd.mpg.de [Max-Planck-Institut für Kernphysik, Postfach 103980, D-69029 Heidelberg (Germany)

2015-08-10

Perpendicular shocks are shown to be rapid particle accelerators that perform optimally when the ratio u{sub s} of the shock speed to the particle speed roughly equals the ratio 1/η of the scattering rate to the gyro frequency. We use analytical methods and Monte-Carlo simulations to solve the kinetic equation that governs the anisotropy generated at these shocks, and find, for ηu{sub s} ≈ 1, that the spectral index softens by unity and the acceleration time increases by a factor of two compared to the standard result of the diffusive shock acceleration theory. These results provide a theoretical basis for the 30 year old conjecture that a supernova exploding into the wind of a Wolf–Rayet star may accelerate protons to an energy exceeding 10{sup 15} eV.

Anomalously large ferromagnetic resonance linewidth in the Gd/Cr/Fe film plane

Science.gov (United States)

Sun, Li; Zhang, Wen; Wong, Ping Kwan Johnny; Yin, Yuli; Jiang, Sheng; Huang, Zhaocong; Zhai, Ya; Yao, Zhongyu; Du, Jun; Sui, Yunxia; Zhai, Hongru

2018-04-01

As an important parameter for characterizing the magnetization dynamics, Gilbert damping constant α in a thin film or a multilayer is generally extracted from the linear fitting of the frequency-dependence of the ferromagnetic resonance linewidth, sometimes accompanied with a tiny deviation of the linewidth to a smaller value at the low-frequency or high-frequency region due to the two-magnon scattering with an in-plane-field configuration, in which an in-plane magnetic field H perpendicular to a microwave field h was applied in film plane during measurement. In contrast, here we report, in ultrathin Gd/Cr/Fe multilayers, an anomalously large linewidth in the film plane at the low-frequency region. For the first time, we have successfully extracted the Gilbert damping constant from perfect theoretical fitting to the experimental data, by considering the effective direction of the magnetization around in precession staying out of the film plane when the in-pane H at which the precession starts is below the saturation field. This magnetization deviation from the film plane is found to have an obvious contribution to the enhanced linewidth caused by two magnon scattering, while slightly reduce the intrinsic linewidth. Under the same resonance frequency, the deviation angle reaches the maximum values at tCr = 1.0 nm while decreases when tCr increases to 1.5 nm, which coincides with the trend of the surface perpendicular anisotropy constant K⊥. A reduced intrinsic damping constant α is obtained as the introduction of Gd layer and Cr layer as a result of the competition between the spin pumping effect and the interfacial effects at the Fe/Gd and Fe/Cr interfaces. While the decreasing α for film with Cr layer thickness increasing to 1.5 nm might means the contribution of the electron density of states at the Fermi energy n(EF). This study offers an effective way to accurately obtain the intrinsic damping constant of spintronic materials/devices, which is essential

Perpendicular magnetic tunnel junction with tunneling magnetoresistance ratio of 64% using MgO (100) barrier layer prepared at room temperature

International Nuclear Information System (INIS)

Ohmori, Hideto; Hatori, Tomoya; Nakagawa, Shigeki

2008-01-01

MgO (100) textured films can be prepared by reactive facing targets sputtering at room temperature without postdeposition annealing process when they were deposited on (100) oriented Fe buffer layers. This method allows fabrication of perpendicular magnetic tunnel junction (p-MTJ) with MgO (100) tunneling barrier layer and rare-earth transition metal (RE-TM) alloy thin films as perpendicularly magnetized free and pinned layers. The 3-nm-thick MgO tunneling barrier layer in p-MTJ multilayer prepared on glass substrate revealed (100) crystalline orientation. Extraordinary Hall effect measurement clarified that the perpendicular magnetic components of 3-nm-thick Fe buffer layers on the two ends of MgO tunneling barrier layer were increased by exchange coupling with RE-TM alloy layers. The RA of 35 kΩ μm 2 and tunneling magnetoresistance ratio of 64% was observed in the multilayered p-MTJ element by current-in-plane-tunneling

Fluorescense Anisotropy Studies of Molecularly Imprinted Polymer Sensors

Energy Technology Data Exchange (ETDEWEB)

Chen, Yin-Chu; Wang, Zheming; Yan, Mingdi; Prahl, Scott A.

2005-08-03

Molecularly imprinted polymers (MIPs) are used as recognition elements in biochemical sensors. In a fluorescence-based MIP sensor system, it is difficult to distinguish the analyte fluorescence from the background fluorescence of the polymer itself. We studied steady-state fluorescence anisotropy of anthracene imprinted in a polymer (polyurethane) matrix. Vertically polarized excitation light was incident on MIP films coated on silicon wafers; vertically and horizontally polarized emission was measured. We compared the fluorescence anisotropy of MIPs with imprinted molecules, MIPs with the imprinted molecules extracted, MIPs with rebound molecules, and nonimprinted control polymers (without binding cavities). It is shown that differences in fluorescence anisotropy between the polymers and imprinted fluorescent molecules may provide a means to discriminate the fluorescence of analyte from that of the background polymer.

Seismic Anisotropy of Soft Sands, Offshore Western AUstralia

Science.gov (United States)

Urosevic, M.; Gurevich, B.

2007-05-01

the VSP data. Further analysis of the soft sand anisotropy was conducted on surface seismic data. Magnitude of the overlain shale anisotropy was first established by measurements in the dominant horizontal stress direction. Subsequently pre-stack reflection amplitudes measured along several azimuths were matched to expected amplitudes from anisotropic AVO modelling. The results indicate that the anisotropy of the reservoir sands is high (more than 10%) at sonic frequencies but weak (about 2-3%), at seismic frequencies. We think this anisotropy is caused by the preferential closure of compliant inter-granular contacts oriented perpendicular to the principal horizontal stress. The effect is weaker at seismic frequencies since the wavelength in this case involves shales as well as sand. Furthermore, sonic anisotropy could have also been affected by the local stress conditions around the wellbore.

A method of producing small grain Ru intermediate layers for perpendicular magnetic media

International Nuclear Information System (INIS)

Yuan Hua; Qin Yueling; Laughlin, David E.

2008-01-01

NiAl + SiO 2 thin films were used as a grain size reducing seedlayer for cobalt alloy granular perpendicular magnetic recording media. The effect of this NiAl + SiO 2 seedlayer on the microstructure and crystalline orientation of Ru intermediate layer has been investigated. By co-sputtering the composite NiAl + SiO 2 seedlayer, the smallest average grain diameter of NiAl was significantly reduced to about 2.5 nm. The grain size of the subsequent Ru intermediate layer was reduced to about 4 nm. X-ray diffraction results indicate an epitaxial orientation relationship of NiAl (110) // Ru (0002) between the two layers. Moreover, significant improvement of this epitaxial relationship was developed, which produced narrow c-axis distribution of the Ru intermediate layer with small grain size. The addition of the NiAl + SiO 2 seedlayer is a very promising approach to reduce the Ru intermediate layer grain size and eventually the magnetic layer grain size for perpendicular magnetic recording media without deterioration of other properties of thin films

Application-related properties of giant magnetostrictive thin films

International Nuclear Information System (INIS)

Lim, S.H.; Kim, H.J.; Na, S.M.; Suh, S.J.

2002-01-01

In an effort to facilitate the utilization of giant magnetostrictive thin films in microdevices, application-related properties of these thin films, which include induced anisotropy, residual stress and corrosion properties, are investigated. A large induced anisotropy with an energy of 6x10 4 J/m 3 is formed in field-sputtered amorphous Sm-Fe-B thin films, resulting in a large magnetostriction anisotropy. Two components of residual stress, intrinsic compressive stress and tensile stress due to the difference of the thermal expansion coefficients between the substrate and thin film, are identified. The variation of residual stress with fabrication parameter and annealing temperature, and its influence on mechanical bending and magnetic properties are examined. Better corrosion properties are observed in Sm-Fe thin films than in Tb-Fe. Corrosion properties of Tb-Fe thin films, however, are much improved with the introduction of nitrogen to the thin films without deteriorating magnetostrictive properties

Shear bands and anisotropy of the mechanical properties of an MA2-1pch magnesium alloy after equal-channel angular pressing

Science.gov (United States)

Serebryany, V. N.; Khar'kova, M. A.; D'yakonov, G. S.; Kopylov, V. I.; Dobatkin, S. V.

2017-10-01

Effect of structure and texture on the anisotropy of the mechanical properties of the MA2-1pch magnesium alloy subjected to equal-channel angular pressing and subsequent annealing has been studied in two mutually perpendicular planes Y and X (along and across the pressing direction). The anisotropy of the mechanical properties is shown to be due to various orientations of shear bands and various types of texture inside the bands and outside them in planes X and Y.

The ab-anisotropy of twinfree YBa2Cu3O7-delta above and below Tc

NARCIS (Netherlands)

Dam, B.; Rector, J.; Surdeanu, R.; Wijngaarden, R.J.; Koster, Gertjan; Peerdeman, F.; van Berkum, J.; de Groot, D.G.; Griessen, R.

1998-01-01

High quality twin-free c-axis oriented YBa2Cu3O7 films were grown by pulsed laser deposition on NdGaO3. We find resistive anisotropies between 1 < a/b < 1.6. The resistive anisotropy above Tc appears to be correlated to the anisotropy in the critical current below Tc. The normal state properties of

Colossal X-Ray-Induced Persistent Photoconductivity in Current-Perpendicular-to-Plane Ferroelectric/Semiconductor Junctions

KAUST Repository

Hu, Weijin; Paudel, Tula R.; Lopatin, Sergei; Wang, Zhihong; Ma, He; Wu, Kewei; Bera, Ashok; Yuan, Guoliang; Gruverman, Alexei; Tsymbal, Evgeny Y.; Wu, Tao

2017-01-01

. So far, PPC has been observed in bulk materials and thin-film structures, where the current flows in the plane, limiting the magnitude of the effect. Here using epitaxial Nb:SrTiO3/Sm0.1Bi0.9FeO3/Pt junctions with a current-perpendicular-to-plane

Nanoscale control of stripe-ordered magnetic domain walls by vertical spin transfer torque in La0.67Sr0.33MnO3 film

Science.gov (United States)

Wang, Jing; Wu, Shizhe; Ma, Ji; Xie, Lishan; Wang, Chuanshou; Malik, Iftikhar Ahmed; Zhang, Yuelin; Xia, Ke; Nan, Ce-Wen; Zhang, Jinxing

2018-02-01

Stripe-ordered domains with perpendicular magnetic anisotropy have been intensively investigated due to their potential applications in high-density magnetic data-storage devices. However, the conventional control methods (e.g., epitaxial strain, local heating, magnetic field, and magnetoelectric effect) of the stripe-ordered domain walls either cannot meet the demands for miniaturization and low power consumption of spintronic devices or require high strength of the electric field due to the small value of the magnetoelectric effect at room temperature. Here, a domain-wall resistive effect of 0.1% was clarified in La0.67Sr0.33MnO3 thin films between the configurations of current in the plane and perpendicular to the plane of walls. Furthermore, a reversible nanoscale control of the domain-wall re-orientation by vertical spin transfer torque across the probe/film interface was achieved, where a probe voltage of 0.1 V was applied on a manganite-based capacitor. We also demonstrated that the stripe-ordered magnetic domain-wall re-orientation strongly depends on the AC frequency of the scanning probe voltage which was applied on the capacitor.

Role of an ultrathin platinum seed layer in antiferromagnet-based perpendicular exchange coupling and its electrical manipulation

Energy Technology Data Exchange (ETDEWEB)

Wang, Y.Y., E-mail: wangyy@buaa.edu.cn [Department of Physics, Beihang University, Beijing 100191 (China); Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing 100084 (China); Song, C., E-mail: songcheng@mail.tsinghua.edu.cn [Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing 100084 (China); Zhang, J.Y. [Department of Physics, Beihang University, Beijing 100191 (China); Pan, F. [Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing 100084 (China)

2017-04-15

The requirement for low-power consumption advances the development of antiferromagnetic (AFM) spintronics manipulated by electric fields. Here we report an electrical manipulation of metallic AFM moments within IrMn/[Co/Pt] by interface engineering, where ultrathin non-magnetic metals are highlighted between IrMn and ferroelectric substrates. Ultrathin Pt seed layers are proved to be vital in elevating the blocking temperature and enhancing the perpendicular exchange coupling through modulating the domain structures of as-prepared IrMn AFM. Further electrical manipulations of perpendicular magnetic anisotropy crucially verify the indispensable role of pre-deposited ultrathin Pt layers in modulating IrMn antiferromagnetic moments, which is confirmed by the intimate correlation between the electrically manipulating AFM and improving its blocking temperature. Instead of immediate contact between IrMn AFM and ferroelectric substrates in a conventional way, interface engineering by adopting ultrathin seed layers here adds a new twist to the electrical modulation of AFM metals. This would provide scientific basis on how to manipulate AFM moments and optimize the design of practical AFM spintronics. - Highlights: • An alternative for manipulating antiferromagnet by interface engineering is provided. • Ultrathin Pt seed layers are vital in elevating the blocking temperature of IrMn. • Perpendicular exchange coupling in IrMn/[Co/Pt] can be modulated by seed layers. • Ultrathin Pt seed layers enable electrical control of perpendicular exchange coupling.

Role of an ultrathin platinum seed layer in antiferromagnet-based perpendicular exchange coupling and its electrical manipulation

International Nuclear Information System (INIS)

Wang, Y.Y.; Song, C.; Zhang, J.Y.; Pan, F.

2017-01-01

The requirement for low-power consumption advances the development of antiferromagnetic (AFM) spintronics manipulated by electric fields. Here we report an electrical manipulation of metallic AFM moments within IrMn/[Co/Pt] by interface engineering, where ultrathin non-magnetic metals are highlighted between IrMn and ferroelectric substrates. Ultrathin Pt seed layers are proved to be vital in elevating the blocking temperature and enhancing the perpendicular exchange coupling through modulating the domain structures of as-prepared IrMn AFM. Further electrical manipulations of perpendicular magnetic anisotropy crucially verify the indispensable role of pre-deposited ultrathin Pt layers in modulating IrMn antiferromagnetic moments, which is confirmed by the intimate correlation between the electrically manipulating AFM and improving its blocking temperature. Instead of immediate contact between IrMn AFM and ferroelectric substrates in a conventional way, interface engineering by adopting ultrathin seed layers here adds a new twist to the electrical modulation of AFM metals. This would provide scientific basis on how to manipulate AFM moments and optimize the design of practical AFM spintronics. - Highlights: • An alternative for manipulating antiferromagnet by interface engineering is provided. • Ultrathin Pt seed layers are vital in elevating the blocking temperature of IrMn. • Perpendicular exchange coupling in IrMn/[Co/Pt] can be modulated by seed layers. • Ultrathin Pt seed layers enable electrical control of perpendicular exchange coupling.