Bidirectional electroluminescence from p-SnO2/i-MgZnO/n-ZnO heterojunction light-emitting diodes

International Nuclear Information System (INIS)

Yang, Yanqin; Li, Songzhan; Liu, Feng; Zhang, Nangang; Liu, Kan; Wang, Shengxiang; Fang, Guojia

2017-01-01

Light-emitting diodes based on p-SnO 2 /i-MgZnO/n-ZnO heterojunction have been fabricated. The material properties and the performance of heterojunction device are characterized. Current-voltage characteristics of the device show a diode-like rectifying behavior. Under forward bias, two prominent emission peaks located at 589 nm and 722 nm in the visible region and a weak ultraviolet emission are observed from p-SnO 2 /i-MgZnO/n-ZnO heterojunction device. As the device is under reverse bias, a broad visible emission band dominates the electroluminescence spectrum at a high current. Furthermore, the emission mechanism has been discussed in terms of energy band structures of the device under forward and reverse biases.

High performance p-i-n CdTe and CdZnTe detectors

CERN Document Server

Khusainov, A K; Ilves, A G; Morozov, V F; Pustovoit, A K; Arlt, R D

1999-01-01

A breakthrough in the performance of p-i-n CdTe and CdZnTe detectors is reported. The detector stability has been significantly improved, allowing their use in precise gamma and XRF applications. Detectors with energy resolution close to Si and Ge were produced operating with only -30--35 deg. C cooling (by a Peltier cooler of 15x15x10 mm size and a consumed power less than 5 W). Presently detectors with volume of up to 300 mm sup 3 are available. In terms of photoelectric effect efficiency it corresponds to HPGe detectors with volumes of about 1.5 cm sup 3. The possibilities of further improvement of CdTe and CdZnTe detector characteristics are discussed in this paper.

Silicon Waveguide with Lateral p-i-n Diode for Nonlinearity Compensation by On-Chip Optical Phase Conjugation

DEFF Research Database (Denmark)

Gajda, A.; Da Ros, Francesco; Porto da Silva, Edson

2018-01-01

A 1-dB Q-factor improvement through optical phase conjugation in a silicon waveguide with a lateral p-i-n diode enables BER

Lead Halide Perovskite Photovoltaic as a Model p-i-n Diode.

Science.gov (United States)

Miyano, Kenjiro; Tripathi, Neeti; Yanagida, Masatoshi; Shirai, Yasuhiro

2016-02-16

The lead halide perovskite photovoltaic cells, especially the iodide compound CH3NH3PbI3 family, exhibited enormous progress in the energy conversion efficiency in the past few years. Although the first attempt to use the perovskite was as a sensitizer in a dye-sensitized solar cell, it has been recognized at the early stage of the development that the working of the perovskite photovoltaics is akin to that of the inorganic thin film solar cells. In fact, theoretically perovskite is always treated as an ordinary direct band gap semiconductor and hence the perovskite photovoltaics as a p-i-n diode. Despite this recognition, research effort along this line of thought is still in pieces and incomplete. Different measurements have been applied to different types of devices (different not only in the materials but also in the cell structures), making it difficult to have a coherent picture. To make the situation worse, the perovskite photovoltaics have been plagued by the irreproducible optoelectronic properties, most notably the sweep direction dependent current-voltage relationship, the hysteresis problem. Under such circumstances, it is naturally very difficult to analyze the data. Therefore, we set out to make hysteresis-free samples and apply time-tested models and numerical tools developed in the field of inorganic semiconductors. A series of electrical measurements have been performed on one type of CH3NH3PbI3 photovoltaic cells, in which a special attention was paid to ensure that their electronic reproducibility was better than the fitting error in the numerical analysis. The data can be quantitatively explained in terms of the established models of inorganic semiconductors: current/voltage relationship can be very well described by a two-diode model, while impedance spectroscopy revealed the presence of a thick intrinsic layer with the help of a numerical solver, SCAPS, developed for thin film solar cell analysis. These results point to that CH3NH3PbI3 is an

Bidirectional electroluminescence from p-SnO{sub 2}/i-MgZnO/n-ZnO heterojunction light-emitting diodes

Energy Technology Data Exchange (ETDEWEB)

Yang, Yanqin [School of Electronic and Electrical Engineering, Hubei Collaborative Innovation Center of Textile Industrial Chain Generic Technology, Wuhan Textile University, Wuhan 430073 (China); Li, Songzhan, E-mail: liszhan@whu.edu.cn [School of Electronic and Electrical Engineering, Hubei Collaborative Innovation Center of Textile Industrial Chain Generic Technology, Wuhan Textile University, Wuhan 430073 (China); Key Lab of Artificial Micro- and Nano-Structures of Ministry of Education of China, School of Physics and Technology, Wuhan University, Wuhan 430072 (China); Liu, Feng; Zhang, Nangang; Liu, Kan [School of Electronic and Electrical Engineering, Hubei Collaborative Innovation Center of Textile Industrial Chain Generic Technology, Wuhan Textile University, Wuhan 430073 (China); Wang, Shengxiang, E-mail: sxwang@wtu.edu.cn [School of Electronic and Electrical Engineering, Hubei Collaborative Innovation Center of Textile Industrial Chain Generic Technology, Wuhan Textile University, Wuhan 430073 (China); Fang, Guojia [Key Lab of Artificial Micro- and Nano-Structures of Ministry of Education of China, School of Physics and Technology, Wuhan University, Wuhan 430072 (China)

2017-06-15

Light-emitting diodes based on p-SnO{sub 2}/i-MgZnO/n-ZnO heterojunction have been fabricated. The material properties and the performance of heterojunction device are characterized. Current-voltage characteristics of the device show a diode-like rectifying behavior. Under forward bias, two prominent emission peaks located at 589 nm and 722 nm in the visible region and a weak ultraviolet emission are observed from p-SnO{sub 2}/i-MgZnO/n-ZnO heterojunction device. As the device is under reverse bias, a broad visible emission band dominates the electroluminescence spectrum at a high current. Furthermore, the emission mechanism has been discussed in terms of energy band structures of the device under forward and reverse biases.

Energy dependence of commercially available diode detectors for in-vivo dosimetry

International Nuclear Information System (INIS)

Saini, Amarjit S.; Zhu, Timothy C.

2007-01-01

The energy dependence of commercially available diode detectors was measured for nominal accelerating potential ranging between Co-60 and 17 MV. The measurements were performed in a liquid water phantom at 5 cm depth for 10x10 cm 2 collimator setting and source-to-detector distance of 100 cm. The response (nC/Gy) was normalized to Co-60 beam after corrections for the dose rate and temperature dependences for each diode. The energy dependence, calculated by taking the percent difference between the maximum and minimum sensitivity normalized to Co-60 beam, varied by 39% for the n-type Isorad Red, 26% for the n-type Isorad Electron, 19% for the QED Red (p-type), 15% for the QED Electron (p-type), 11% for the QED Blue (p-type), and 6% for the EDP10 diode for nominal accelerating potential between Co-60 and 17 MV. It varied by 34% for the Isorad-3 Gold 1 and 2, 35% for the Veridose Green, 15% for the Veridose Yellow, 9% for the Veridose Electron, 21% for the n-type QED Gold, 24% for the n-type QED Red, 3% for the EDP2 3G , 2% for the PFD (photon field detector), 7% for the EDP10 3G , and 16% for the EDP20 3G for nominal accelerating potential between Co-60 and 15 MV. The magnitude of the energy dependence is verified by Monte Carlo simulation. We concluded that the energy dependence does not depend on whether the diode is n- or p-type but rather depends mainly on the material around the die such as the buildup and the geometry of the buildup material. As a result, the value of the energy dependence can vary for each individual diode depending on the actual geometry and should be used with caution

Detection mechanisms in silicon diodes used as α-particle and thermal neutron detectors

International Nuclear Information System (INIS)

Cerofolini, G.F.; Ferla, G.; Foglio Para, A.

1981-01-01

Some common silicon devices (diodes, RAMs etc.) can be used as α and thermal neutron detectors. An α resolution of approx. equal to 3% can be obtained utilizing p + /n or n + /p diodes with no external bias. Thermal neutrons are detected by means of the reaction 10 B(n,α) 7 Li on the 10 B present in the devices. Neutron efficiency has been substantially improved by implantation of 10 B ions in the p + region of the diodes. Experimental results allow us to clarify the carrier collection mechanisms throughout the device. Some current opinions in the field are contradicted. (orig.)

Fabrication of p-Si/n-ZnO:Al heterojunction diode and determination of electrical parameters

Science.gov (United States)

Ilican, Saliha; Gorgun, Kamuran; Aksoy, Seval; Caglar, Yasemin; Caglar, Mujdat

2018-03-01

We present a fundamental experimental study of a microwave assisted chemical bath deposition (MW-CBD) method for Al doped ZnO films. Field emission scanning electron microscopy (FESEM) and X-ray diffraction (XRD) spectroscopy were used to analyze the microstructures and crystalline structures of these films, respectively. The p-Si/n-ZnO:Al heterojunction diodes were fabricated. The current-voltage (I-V) characteristics of these diodes were measured at room temperature. The important electrical parameters such as series resistance, the ideality factor and the barrier height were determined by performing plots from the forward bias I-V characteristics using different methods. The obtained results indicate that Al doping improve the electrical properties of the p-Si/n-ZnO diode. The best rectification properties were observed in the p-Si/n-ZnO:5%Al heterojunction diode, so only capacitance-voltage (C-V) measurements of this diode were taken. Electrical parameter values such as series resistance, the built-in potential and the acceptor concentration calculated for this heterojunction diode.

Investigation of thermometrical characteristics of p+–n-GaP diodes

Directory of Open Access Journals (Sweden)

Sypko N. I.

2008-12-01

Full Text Available The method of reception of p+–n-diode epitaxial structures of GaP from liquid phase is developed. In the temperature range of 80—520 K thermometric and current-voltage characteristics of test models of diode temperature sensors are measured and their basic technical parameters are determined. Perspectivity of developed GaP-diodes application as sensitive elements of high-temperature sensor is shown.

BPW34 Commercial p-i-n Diodes for High-Level 1-MeV Neutron Equivalent Fluence Monitoring

CERN Document Server

Ravotti, F; Moll, M; Saigne, F

2008-01-01

The BPW34 p-i-n diode was characterized at CERN in view of its utilization as radiation monitor at the LHC to cover the broad 1-MeV neutron equivalent fluence (Phieq) range expected for the LHC machine and experiments during operation. Electrical measurements for both forward and reverse bias were used to characterize the device and to understand its behavior under irradiation. When the device is powered forward, a sensitivity to fast hadrons for Phieq > 2 times1012 cm-2 has been observed. With increasing particle fluences the forward I- V characteristics of the diode shifts towards higher voltages. At Phieq > 3times1013 cm-2, the forward characteristic starts to bend back assuming a thyristor-like behavior. An explanation for this phenomenon is given in this article. Finally, detailed radiation-response curves for the forward bias-operation and annealing studies of the diode's forward voltage are presented for proton, neutron and gamma irradiation.

Dose rate and SDD dependence of commercially available diode detectors

International Nuclear Information System (INIS)

Saini, Amarjit S.; Zhu, Timothy C.

2004-01-01

The dose-rate dependence of commercially available diode detectors was measured under both high instantaneous dose-rate (pulsed) and low dose rate (continuous, Co-60) radiation. The dose-rate dependence was measured in an acrylic miniphantom at a 5-cm depth in a 10x10 cm 2 collimator setting, by varying source-to-detector distance (SDD) between at least 80 and 200 cm. The ratio of a normalized diode reading to a normalized ion chamber reading (both at SDD=100 cm) was used to determine diode sensitivity ratio for pulsed and continuous radiation at different SDD. The inverse of the diode sensitivity ratio is defined as the SDD correction factor (SDD CF). The diode sensitivity ratio increased with increasing instantaneous dose rate (or decreasing SDD). The ratio of diode sensitivity, normalized to 4000 cGy/s, varied between 0.988 (1490 cGy/s)-1.023 (38 900 cGy/s) for unirradiated n-type Isorad Gold, 0.981 (1460 cGy/s)-1.026 (39 060 cGy/s) for unirradiated QED Red (n type), 0.972 (1490 cGy/s)-1.068 (38 900 cGy/s) for preirradiated Isorad Red (n type), 0.985 (1490 cGy/s)-1.012 (38 990 cGy/s) for n-type Pt-doped Isorad-3 Gold, 0.995 (1450 cGy/s)-1.020 (21 870 cGy/s) for n-type Veridose Green, 0.978 (1450 cGy/s)-1.066 (21 870 cGy/s) for preirradiated Isorad-p Red, 0.994 (1540 cGy/s)-1.028 (17 870 cGy/s) for p-type preirradiated QED, 0.998 (1450 cGy/s)-1.003 (21 870 cGy/s) for the p-type preirradiated Scanditronix EDP20 3G , and 0.998 (1490 cGy/s)-1.015 (38 880 cGy/s) for Scanditronix EDP10 3G diodes. The p-type diodes do not always show less dose-rate dependence than the n-type diodes. Preirradiation does not always reduce diode dose-rate dependence. A comparison between the SDD dependence measured at the surface of a full scatter phantom and that in a miniphantom was made. Using a direct adjustment of radiation pulse height, we concluded that the SDD dependence of diode sensitivity can be explained by the instantaneous dose-rate dependence if sufficient buildup is

Investigations of thin p-GaN light-emitting diodes

DEFF Research Database (Denmark)

Fadil, Ahmed; Ou, Yiyu; Iida, Daisuke

2016-01-01

We investigate device performance of InGaN light-emitting diodes with a 30-nm p-GaN layer. The metallization used to separate the p-contact from plasmonic metals, reveals limitations on current spreading which reduces surface plasmonic enhancement.......We investigate device performance of InGaN light-emitting diodes with a 30-nm p-GaN layer. The metallization used to separate the p-contact from plasmonic metals, reveals limitations on current spreading which reduces surface plasmonic enhancement....

GaAs Schottky versus p/i/n diodes for pixellated X-ray detectors

CERN Document Server

Bourgoin, J C

2002-01-01

We discuss the performances of GaAs p/i/n structures and Schottky barriers for application as photodetectors for high-energy photons. We compare the magnitude of the leakage current and the width of the depleted region for a given reverse bias. We mention the effect of states present at the metal-semiconductor interface on the extension of the space charge region in Schottky barriers. We illustrate this effect by a description of the capacitance behaviour of a Au-GaAs barrier under gamma irradiation.

P-n junction diodes with polarization induced p-type graded InxGa1-xN layer

Science.gov (United States)

Enatsu, Yuuki; Gupta, Chirag; Keller, Stacia; Nakamura, Shuji; Mishra, Umesh K.

2017-10-01

In this study, p-n junction diodes with polarization induced p-type layer are demonstrated on Ga polar (0001) bulk GaN substrates. A quasi-p-type region is obtained by linearly grading the indium composition in un-doped InxGa1-xN layers from 0% to 5%, taking advantage of the piezoelectric and spontaneous polarization fields which exist in group III-nitride heterostructures grown in the typical (0001) or c-direction. The un-doped graded InxGa1-xN layers needed to be capped with a thin Mg-doped InxGa1-xN layer to make good ohmic contacts and to reduce the on-resistance of the p-n diodes. The Pol-p-n junction diodes exhibited similar characteristics compared to reference samples with traditional p-GaN:Mg layers. A rise in breakdown voltage from 30 to 110 V was observed when the thickness of the graded InGaN layer was increased from 100 to 600 nm at the same grade composition.

InAs/InP/InSb Nanowires as Low Capacitance n-n Heterojunction Diodes

Directory of Open Access Journals (Sweden)

A. Pitanti

2011-08-01

Full Text Available Nanowire diodes have been realized by employing an axial heterojunction between InAs and InSb semiconductor materials. The broken-gap band alignment (type III leads to a strong rectification effect when the current-voltage (I-V characteristic is inspected at room temperature. The additional insertion of a narrow InP barrier reduces the thermionic contribution, which results in a net decrease of leakage current in the reverse bias with a corresponding enhanced rectification in terms of asymmetry in the I-V characteristics. The investigated diodes compare favorably with the ones realized with p-n heterostructured nanowires, making InAs/InP/InSb devices appealing candidates to be used as building blocks for nanowire-based ultrafast electronics and for the realization of photodetectors in the THz spectral range.

Electrical characterization of proton irradiated p+-n-n+ Si diode

International Nuclear Information System (INIS)

Kim, J.H.; Lee, D.U.; Kim, E.K.; Bae, Y.H.

2006-01-01

Electrical characterization of p + -n-n + Si power electric diodes was done with proton irradiation. The kinetic energies of irradiated protons were 2.32, 2.55 and 2.97MeV, and for each energy condition, doses of 1x10 11 , 1x10 12 and 1x10 13 cm -2 were given. By modulating the kinetic energy, the proton penetration depth into Si crystal could be adjusted to the range of 55-90μm, and then controlled to the special depth regions such as junction region, depletion region and neutral region over the depletion layer in the p + -n-n + diode structure. Defects produced by the proton irradiation affected to electrical property of the Si diode because of their carrier trapping, and then the reverse recovery time was improved from 240 to 50ns. It appeared that the defect states with activation energies of 0.47 and 0.54eV may be responsible for the decrease of the minority carrier lifetime in the proton-irradiated diode with 2.97MeV energy and 1x10 13 cm -2 doses

Single n+-i-n+ InP nanowires for highly sensitive terahertz detection.

Science.gov (United States)

Peng, Kun; Parkinson, Patrick; Gao, Qian; Boland, Jessica L; Li, Ziyuan; Wang, Fan; Mokkapati, Sudha; Fu, Lan; Johnston, Michael B; Tan, Hark Hoe; Jagadish, Chennupati

2017-03-24

Developing single-nanowire terahertz (THz) electronics and employing them as sub-wavelength components for highly-integrated THz time-domain spectroscopy (THz-TDS) applications is a promising approach to achieve future low-cost, highly integrable and high-resolution THz tools, which are desirable in many areas spanning from security, industry, environmental monitoring and medical diagnostics to fundamental science. In this work, we present the design and growth of n + -i-n + InP nanowires. The axial doping profile of the n + -i-n + InP nanowires has been calibrated and characterized using combined optical and electrical approaches to achieve nanowire devices with low contact resistances, on which the highly-sensitive InP single-nanowire photoconductive THz detectors have been demonstrated. While the n + -i-n + InP nanowire detector has a only pA-level response current, it has a 2.5 times improved signal-to-noise ratio compared with the undoped InP nanowire detector and is comparable to traditional bulk THz detectors. This performance indicates a promising path to nanowire-based THz electronics for future commercial applications.

n-(CdMgTe/CdTe)/(p-(CdTe/ZnCdTe/ZnTe)/p-GaAs heterostructure diode for photosensor applications

Science.gov (United States)

Yahia, I. S.; AlFaify, S.; Abutalib, M. M.; Chusnutdinow, S.; Wojtowicz, T.; Karczewski, G.; Yakuphanoglu, F.; Al-Bassam, A.; El-Naggar, A. M.; El-Bashir, S. M.

2016-05-01

High quality n-(CdMgTe:I/n-CdTe:I)/(p-CdTe:N/p-ZnCdTe:N/p-ZnTe:N)/p-GaAs heterojunction diodes have been fabricated by molecular beam epitaxial growth. The illumination effect on the complex impedance and conductivity of heterostructure diode was investigated. The illumination intensities were taken up to the 200 mW/cm2 with frequency range of 42 Hz to 1 MHz. The observed real and imaginary parts of the complex impedance were strongly dependent on the illumination frequency. The inverse relation was observed between the illumination intensity and the complex impedance. The relaxation mechanism of the diode was analyzed by the Cole-Cole plots. The radius of the Cole-Cole curve decreases with increasing illumination intensity. This suggests a mechanism of illumination dependent on the relaxation process. It is also found that the conductivity increases linearly with increasing the illumination intensity. We can conclude that the new design heterostructure diode in our work is a good candidate in photodetector and optoelectronic applications.

Application of AXUV diode detectors at ASDEX Upgrade

Science.gov (United States)

Bernert, M.; Eich, T.; Burckhart, A.; Fuchs, J. C.; Giannone, L.; Kallenbach, A.; McDermott, R. M.; Sieglin, B.

2014-03-01

In the ASDEX Upgrade tokamak, a radiation measurement for a wide spectral range, based on semiconductor detectors, with 256 lines of sight and a time resolution of 5μs was recently installed. In combination with the foil based bolometry, it is now possible to estimate the absolutely calibrated radiated power of the plasma on fast timescales. This work introduces this diagnostic based on AXUV (Absolute eXtended UltraViolet) n-on-p diodes made by International Radiation Detectors, Inc. The measurement and the degradation of the diodes in a tokamak environment is shown. Even though the AXUV diodes are developed to have a constant sensitivity for all photon energies (1 eV-8 keV), degradation leads to a photon energy dependence of the sensitivity. The foil bolometry, which is restricted to a time resolution of less than 1 kHz, offers a basis for a time dependent calibration of the diodes. The measurements of the quasi-calibrated diodes are compared with the foil bolometry and found to be accurate on the kHz time scale. Therefore, it is assumed, that the corrected values are also valid for the highest time resolution (200 kHz). With this improved diagnostic setup, the radiation induced by edge localized modes is analyzed on fast timescales.

Application of AXUV diode detectors at ASDEX Upgrade

International Nuclear Information System (INIS)

Bernert, M.; Eich, T.; Burckhart, A.; Fuchs, J. C.; Giannone, L.; Kallenbach, A.; McDermott, R. M.; Sieglin, B.

2014-01-01

In the ASDEX Upgrade tokamak, a radiation measurement for a wide spectral range, based on semiconductor detectors, with 256 lines of sight and a time resolution of 5μs was recently installed. In combination with the foil based bolometry, it is now possible to estimate the absolutely calibrated radiated power of the plasma on fast timescales. This work introduces this diagnostic based on AXUV (Absolute eXtended UltraViolet) n-on-p diodes made by International Radiation Detectors, Inc. The measurement and the degradation of the diodes in a tokamak environment is shown. Even though the AXUV diodes are developed to have a constant sensitivity for all photon energies (1 eV-8 keV), degradation leads to a photon energy dependence of the sensitivity. The foil bolometry, which is restricted to a time resolution of less than 1 kHz, offers a basis for a time dependent calibration of the diodes. The measurements of the quasi-calibrated diodes are compared with the foil bolometry and found to be accurate on the kHz time scale. Therefore, it is assumed, that the corrected values are also valid for the highest time resolution (200 kHz). With this improved diagnostic setup, the radiation induced by edge localized modes is analyzed on fast timescales

Recent Technological Developments on LGAD and iLGAD Detectors for Tracking and Timing Applications

OpenAIRE

Pellegrini, G.; Baselga, M.; Carulla, M.; Fadeyev, V.; Fernández-Martínez, P.; Fernandez-Garcia, M.; Flores, D.; Galloway, Z.; Gallrapp, C.; Hidalgo, S.; Liang, Z.; Merlos, A.; Moll, M.; Quirion, D.; Sadrozinski, H.

2015-01-01

This paper reports the last technological development on the Low Gain Avalanche Detector (LGAD) and introduces a new architecture of these detectors called inverse-LGAD (iLGAD). Both approaches are based on the standard Avalanche Photo Diodes (APD) concept, commonly used in optical and X-ray detection applications, including an internal multiplication of the charge generated by radiation. The multiplication is inherent to the basic n++-p+-p structure, where the doping profile of the p+ layer ...

Comparison of silicon pin diode detector fabrication processes using ion implantation and thermal doping

International Nuclear Information System (INIS)

Zhou, C.Z.; Warburton, W.K.

1996-01-01

Two processes for the fabrication of silicon p-i-n diode radiation detectors are described and compared. Both processes are compatible with conventional integrated-circuit fabrication techniques and yield very low leakage currents. Devices made from the process using boron thermal doping have about a factor of 2 lower leakage current than those using boron ion implantation. However, the boron thermal doping process requires additional process steps to remove boron skins. (orig.)

Fabrication of detectors and transistors on high-resistivity silicon

International Nuclear Information System (INIS)

Holland, S.

1988-06-01

A new process for the fabrication of silicon p-i-n diode radiation detectors is described. The utilization of backside gettering in the fabrication process results in the actual physical removal of detrimental impurities from critical device regions. This reduces the sensitivity of detector properties to processing variables while yielding low diode reverse-leakage currents. In addition, gettering permits the use of processing temperatures compatible with integrated-circuit fabrication. P-channel MOSFETs and silicon p-i-n diodes have been fabricated simultaneously on 10 kΩ/centerreverse arrowdot/cm silicon using conventional integrated-circuit processing techniques. 25 refs., 5 figs

The Influence of High-Energy Electrons Irradiation on Surface of n-GaP and on Au/n-GaP/Al Schottky Barrier Diode

Science.gov (United States)

Demir, K. Çinar; Kurudirek, S. V.; Oz, S.; Biber, M.; Aydoğan, Ş.; Şahin, Y.; Coşkun, C.

We fabricated 25 Au/n-GaP/Al Schottky devices and investigated the influence of high electron irradiation, which has 12MeV on the devices, at room temperature. The X-ray diffraction patterns, scanning electron microscopic images and Raman spectra of a gallium phosphide (GaP) semiconductor before and after electron irradiation have been analyzed. Furthermore, some electrical measurements of the devices were carried out through the current-voltage (I-V) and capacitance-voltage (C-V) measurements. From the I-V characteristics, experimental ideality factor n and barrier height Φ values of these Schottky diodes have been determined before and after irradiation, respectively. The results have also been analyzed statically, and a gauss distribution has been obtained. The built-in potential Vbi, barrier height Φ, Fermi level EF and donor concentration Nd values have been determined from the reverse bias C-V and C-2-V curves of Au/n-GaP/Al Schottky barrier diodes at 100kHz before and after 12MeV electron irradiation. Furthermore, we obtained the series resistance values of Au/n-GaP/Al Schottky barrier diodes with the help of different methods. Experimental results confirmed that the electrical characterization of the device changed with the electron irradiation.

Processing and first characterization of detectors made with high resistivity n- and p-type Czochralski silicon

International Nuclear Information System (INIS)

Bruzzi, M.; Bisello, D.; Borrello, L.; Borchi, E.; Boscardin, M.; Candelori, A.; Creanza, D.; Dalla Betta, G.-F.; DePalma, M.; Dittongo, S.; Focardi, E.; Khomenkov, V.; Litovchenko, A.; Macchiolo, A.; Manna, N.; Menichelli, D.; Messineo, A.; Miglio, S.; Petasecca, M.; Piemonte, C.; Pignatel, G.U.; Radicci, V.; Ronchin, S.; Scaringella, M.; Segneri, G.; Sentenac, D.; Tosi, C.; Zorzi, N.

2005-01-01

We report on the design, manufacturing and first characterisation of pad diodes, test structures and microstrip detectors processed with high resistivity magnetic Czochralski (MCz) p- and n-type Si. The pre-irradiation study on newly processed microstrip detectors and test structures show a good overall quality of the processed wafers. After irradiation with 24 GeV/c protons up to 4x10 14 cm -2 the characterisation of n-on-p and p-on-n MCz Si sensors with the C-V method show a decrease of the full depletion voltage and no space charge sign inversion. Microscopic characterisation has been performed to study the role of thermal donors in Czochralski Si. No evidence of thermal donor activation was observed in n-type MCz Si detectors if contact sintering was performed at a temperature lower than 380 deg. C and the final passivation oxide was omitted

p - n junction diodes fabricated from isolated electrospun fibers of (P(NDI2ODT2)) and an inorganic p-doped semiconductor

Science.gov (United States)

Rosado, Alexander; Pinto, Nicholas

2013-03-01

A simple method to fabricate, under ambient conditions and within seconds, p - n diodes using an individual electrospun poly{[N, N'-bis(2-octyldodecyl)-naphthalene-1,4,5,8-bis(dicarboximide)-2,6-diyl]-alt-5,5'-(2,2'-bithiophene)}-(P(NDI2ODT2)) fiber and a commercially available p-doped Si/SiO2 substrate is presented. Band bending at the fiber/Si+ interface leads to asymmetric I-V characteristic curves resembling that of a diode. The diode turn-on voltage was in the range 1V and was unaffected via UV light irradiation. The rectification ratio however could be tuned reversibly thereby making this device multifunctional. In addition to being a rectifier, the advantage of our design is the complete exposure of the rectifying junction to the surrounding environment. This has the advantage of making them attractive candidates in the potential fabrication of low power, sensitive and rapid response photo-sensors. NSF

Characterization of proton and neutron irradiated low resistivity p-on-n magnetic Czochralski ministrip sensors and diodes

International Nuclear Information System (INIS)

Pacifico, Nicola; Dolenc Kittelmann, Irena; Fahrer, Manuel; Moll, Michael; Militaru, Otilia

2011-01-01

Transient Current Technique (TCT) and Charge Collection Efficiency (CCE) measurements were performed on low resistivity (280Ωcm) n-bulk, p-readout magnetic Czochralski ministrip sensors and diodes. The detectors were irradiated with neutrons and 24 GeV/c protons up to a total NIEL equivalent fluence of 8×10 15 /cm 2 . The study was addressed to assess the radiation tolerance of the detectors up to fluences expected in the next generations of High Energy Physics experiments. The charge collection efficiency after irradiation was found to be much higher than for standard FZ silicon p-in-n sensors. The underlying physics of this remarkable result was investigated by performing Edge-TCT measurements on one of the neutron irradiated ministrip sensors to extract detailed informations about the field and efficiency profiles of the detector.

P.I.X.S.C.A.N.: a micro-CT scanner for small animal based on hybrid pixel detectors

International Nuclear Information System (INIS)

Khoury, R.

2008-03-01

Since more than a dozen years, efforts were led in the field of X-ray tomography for small animals, principally for the improvement of spatial resolution and the diminution of the absorbed dose. The C.P.P.M. developed the micro-CT P.I.X.S.C.A.N. based on the hybrid pixel detector X.P.A.D.2. In this context, my thesis work consists in studying the demonstrator P.I.X.S.C.A.N./X.P.A.D.2 and the contribution of the hybrid pixels in the imaging of small animals. A fast analytical simulation, FastSimu, was developed. An extrapolation of the performance of the demonstrator P.I.X.S.C.A.N, as well as the validation of the results obtained with the measured data, were led by means of the analytical simulator FastSimu. The demonstrator P.I.X.S.C.A.N./X.P.A.D.2 allowed to obtain reconstructed images with a rather good quality for a relatively weak absorbed dose. Its spatial resolution is degraded by the high number of defective pixels of the detector X.P.A.D.2. Beyond this study, a new version of the demonstrator P.I.X.S.C.A.N./X.P.A.D.2 is under construction. This latter, characterized by two and a half times smaller pixels and about no defective pixels will bring a considerable improvement on spatial resolution. (author)

Growth and characterization of Ag/n-ZnO/p-Si/Al heterojunction diode by sol–gel spin technique

International Nuclear Information System (INIS)

Keskenler, E.F.; Tomakin, M.; Doğan, S.; Turgut, G.; Aydın, S.; Duman, S.; Gürbulak, B.

2013-01-01

Highlights: ► Ag/n-ZnO/p-Si/Al heterojunction diode was grown via sol–gel technique. ► The characterization of ZnO material was investigated. ► The heterojunction structure showed a rectification behavior. ► Ideality factor and barrier height were found to be 2.03 and 0.71 eV, respectively. - Abstract: Polycrystalline ZnO thin film was obtained on the p-Si for the heterojunction diode fabrication by sol–gel method. X-ray diffraction study showed that the texture of the film is hexagonal with a strong (0 0 2) preferred direction. Scanning electron microscope image of ZnO showed that the obtained ZnO thin films had more porous character. High purity vacuum evaporated silver (Ag) and aluminum (Al) metals were used to make Ohmic contacts to the n-ZnO/p-Si heterojunction structure. The electrical properties of Ag/n-ZnO/p-Si/Al diode were investigated by using current–voltage measurements. Ag/n-ZnO/p-Si/Al heterojunction diode showed a rectification behavior, and its ideality factor and barrier height values were found to be 2.03 and 0.71 eV by applying a thermionic emission theory, respectively. The values of series resistance from dV/d (ln I) versus I and H(I) versus I curves were found to be 42.1 and 198.3 Ω, respectively.

n-GaAs/InGaP/p-GaAs core-multishell nanowire diodes for efficient light-to-current conversion

Energy Technology Data Exchange (ETDEWEB)

Gutsche, Christoph; Lysov, Andrey; Regolin, Ingo; Keller, Gregor; Prost, Werner; Tegude, Franz-Josef [Department of Solid-State Electronics and CeNIDE University of Duisburg-Essen, Duisburg (Germany); Braam, Daniel; Li, Zi-An; Geller, Martin; Spasova, Marina [Department of Experimental Physics and CeNIDE University of Duisburg-Essen, Duisburg (Germany)

2012-03-07

Heterostructure n-GaAs/InGaP/p-GaAs core-multishell nanowire diodes are synthesized by metal-organic vapor-phase epitaxy. This structure allows a reproducible, selective wet etching of the individual shells and therefore a simplified contacting of single nanowire p-i-n junctions. Nanowire diodes show leakage currents in a low pA range and at a high rectification ratio of 3500 (at {+-}1V). Pronounced electroluminescence at 1.4 eV is measured at room temperature and gives evidence of the device quality. Photocurrent generation is demonstrated at the complete area of the nanowire p-i-n junction by scanning photocurrent microscopy. A solar-conversion efficiency of 4.7%, an open-circuit voltage of 0.5 V and a fill factor of 52% are obtained under AM 1.5G conditions. These results will guide the development of nanowire-based photonic and photovoltaic devices. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Characterization of proton and neutron irradiated low resistivity p-on-n magnetic Czochralski ministrip sensors and diodes

Energy Technology Data Exchange (ETDEWEB)

Pacifico, Nicola, E-mail: nicola.pacifico@cern.ch [CERN, Geneva (Switzerland); Dolenc Kittelmann, Irena; Fahrer, Manuel; Moll, Michael [CERN, Geneva (Switzerland); Militaru, Otilia [UCL, Louvain (Belgium)

2011-12-01

Transient Current Technique (TCT) and Charge Collection Efficiency (CCE) measurements were performed on low resistivity (280{Omega}cm) n-bulk, p-readout magnetic Czochralski ministrip sensors and diodes. The detectors were irradiated with neutrons and 24 GeV/c protons up to a total NIEL equivalent fluence of 8 Multiplication-Sign 10{sup 15}/cm{sup 2}. The study was addressed to assess the radiation tolerance of the detectors up to fluences expected in the next generations of High Energy Physics experiments. The charge collection efficiency after irradiation was found to be much higher than for standard FZ silicon p-in-n sensors. The underlying physics of this remarkable result was investigated by performing Edge-TCT measurements on one of the neutron irradiated ministrip sensors to extract detailed informations about the field and efficiency profiles of the detector.

Photon detector configured to employ the Gunn effect and method of use

Science.gov (United States)

Cich, Michael J

2015-03-17

Embodiments disclosed herein relate to photon detectors configured to employ the Gunn effect for detecting high-energy photons (e.g., x-rays and gamma rays) and methods of use. In an embodiment, a photon detector for detecting high-energy photons is disclosed. The photon detector includes a p-i-n semiconductor diode having a p-type semiconductor region, an n-type semiconductor region, and a compensated i-region disposed between the p-type semiconductor region and the n-type semiconductor region. The compensated i-region and has a width of about 100 .mu.m to about 400 .mu.m and is configured to exhibit the Gunn effect when the p-i-n semiconductor diode is forward biased a sufficient amount. The compensated i-region is doped to include a free carrier concentration of less than about 10.sup.10 cm.sup.-3.

Photon response of silicon diode neutron detectors

International Nuclear Information System (INIS)

McCall, R.C.; Jenkins, T.M.; Oliver, G.D. Jr.

1976-07-01

The photon response of silicon diode neutron detectors was studied to solve the problem on detecting neutrons in the presence of high energy photons at accelerator neutron sources. For the experiment Si diodes, Si discs, and moderated activation foil detectors were used. The moderated activation foil detector consisted of a commercial moderator and indium foils 2'' in diameter and approximately 2.7 grams each. The moderator is a cylinder of low-density polyethylene 6 1 / 4 '' in diameter by 6 1 / 16 '' long covered with 0.020'' of cadmium. Neutrons are detected by the reaction 115 In (n,γ) 116 In(T/sub 1 / 2 / = 54 min). Photons cannot be detected directly but photoneutrons produced in the moderator assembly can cause a photon response. The Si discs were thin slices of single-crystal Si about 1.4 mils thick and 1'' in diameter which were used as activation detectors, subsequently being counted on a thin-window pancake G.M. counter. The Si diode fast neutron dosimeter 5422, manufactured by AB Atomenergi in Studsvik, Sweden, consists of a superdoped silicon wafer with a base width of 0.050 inches between two silver contacts coated with 2 mm of epoxy. For this experiment, the technique of measuring the percent change of voltage versus dose was used. Good precision was obtained using both unirradiated and preirradiated diodes. All diodes, calibrated against 252 CF in air,were read out 48 hours after irradiation to account for any room temperature annealing. Results are presented and discussed

Ultrafast photoconductor detector-laser-diode transmitter

International Nuclear Information System (INIS)

Wang, C.L.; Davis, B.A.; Davies, T.J.; Nelson, M.A.; Thomas, M.C.; Zagarino, P.A.

1987-01-01

We report the results of an experiment in which we used an ultrafast, photoconductive, radiation detector to drive a fast laser-diode transmitter. When we irradiated the neutron-damaged Cr-doped GaAs detector with 17-MeV electron beams, the temporal response was measured to be less than 30 ps. The pulses from this detector modulated a fast GaAlAs laser diode to transmit the laser output through 30- and 1100-m optical fibers. Preliminary results indicate that 50- and 80-ps time resolutions, respectively, are obtainable with these fibers. We are now working to integrate the photoconductive detector and the laser diode transmitter into a single chip

Zn doping induced conductivity transformation in NiO films for realization of p-n homo junction diode

Science.gov (United States)

Dewan, Sheetal; Tomar, Monika; Tandon, R. P.; Gupta, Vinay

2017-06-01

Mixed transition metal oxide, zinc doped NiO, Z n x N i 1 - x O (x = 0, 0.01, 0.02, 0.05, and 0.10), thin films have been fabricated by the RF magnetron sputtering technique in an oxygen deficit ambience at a growth temperature of 400 °C. The present report highlights the effect of Zn doping in NiO thin films on its structural, optical, and electrical properties. Optical transmission enhancement and band gap engineering in a-axis oriented NiO films have been demonstrated via Zn substitution. Hall effect measurements of the prepared samples revealed a transition from p-type to n-type conductivity in NiO at 2% Zn doping. A NiO based transparent p-n homojunction diode has been fabricated successfully, and the conduction mechanism dominating the diode properties is reported in detail. Current-voltage (I-V) characteristics of the homojunction diode are found to obey the Space Charge Limited Conduction mechanism with non-ideal square law behaviour.

Ultrafast photoconductive detector-laser-diode transmitter

International Nuclear Information System (INIS)

Wang, C.L.; Davies, T.J.; Nelson, M.A.; Thomas, M.C.; Zagarino, P.A.; Davis, B.A.

1987-01-01

The authors report the results of an experiment in which they used an ultrafast, photoconductive, radiation detector to drive a fast laser-diode transmitter. When they irradiated the neutron-damaged Cr-doped Ga/As detector with 17-MeV electron beams, the temporal response of was measured to be less than 30 ps. The pulses from this detector modulated a fast GaAlAs laser diode to transmit the laser output through 30- and 1100-m optical fibers. Preliminary results indicate that 50- and 80-ps time resolutions, respectively, are obtainable with these fibers. They are now working to integrate the photoconductive detector and the laser diode transmitter into a single chip

The All Boron Carbide Diode Neutron Detector: Experiment and Modeling Approach

International Nuclear Information System (INIS)

Sabirianov, Ildar F.; Brand, Jennifer I.; Fairchild, Robert W.

2008-01-01

Boron carbide diode detectors, fabricated from two different polytypes of semiconducting boron carbide, will detect neutrons in reasonable agreement with theoretical expectations. The performance of the all boron carbide neutron detector differs, as expected, from devices where a boron rich neutron capture layer is distinct from the diode charge collection region (i.e. a conversion layer solid state detector). Diodes were fabricated from natural abundance boron (20% 10 B and 80% 11 B.) directly on the metal substrates and metal contacts applied to the films as grown. The total boron depth was on the order of 2 microns. This is clearly not a conversion-layer configuration. The diodes were exposed to thermal neutrons generated from a paraffin moderated plutonium-beryllium source in moderated and un-moderated, as well as shielded and unshielded experimental configurations, where the expected energy peaks at at 2.31 MeV and 2.8 MeV were clearly observed, albeit with some incomplete charge collection typical of thinner diode structures. The results are compared with other boron based thin film detectors and literature models. (authors)

Temperature dependent characterization of gallium arsenide X-ray mesa p-i-n photodiodes

Energy Technology Data Exchange (ETDEWEB)

Lioliou, G., E-mail: G.Lioliou@sussex.ac.uk; Barnett, A. M. [Semiconductor Materials and Devices Laboratory, Department Engineering and Design, School of Engineering and Informatics, University of Sussex, Falmer, Brighton BN1 9QT (United Kingdom); Meng, X.; Ng, J. S. [Department of Electronic and Electrical Engineering, University of Sheffield, Mappin Street, Sheffield S1 3JD (United Kingdom)

2016-03-28

Electrical characterization of two GaAs p{sup +}-i-n{sup +} mesa X-ray photodiodes over the temperature range 0 °C to 120 °C together with characterization of one of the diodes as an X-ray detector over the temperature range 0 °C to 60 °C is reported as part of the development of photon counting X-ray spectroscopic systems for harsh environments. The randomly selected diodes were fully etched and unpassivated. The diodes were 200 μm in diameter and had 7 μm thick i layers. The leakage current density was found to increase from (3 ± 1) nA/cm{sup −2} at 0 °C to (24.36 ± 0.05) μA/cm{sup −2} at 120 °C for D1 and from a current density smaller than the uncertainty (0.2 ± 1.2) nA/cm{sup −2} at 0 °C to (9.39 ± 0.02) μA/cm{sup −2} at 120 °C for D2 at the maximum investigated reverse bias (15 V). The best energy resolution (FWHM at 5.9 keV) was achieved at 5 V reverse bias, at each temperature; 730 eV at 0 °C, 750 eV at 20 °C, 770 eV at 40 °C, and 840 eV at 60 °C. It was found that the parallel white noise was the main source of the photopeak broadening only when the detector operated at 60 °C, at 5 V, 10 V, and 15 V reverse bias and at long shaping times (>5 μs), whereas the sum of the dielectric noise and charge trapping noise was the dominant source of noise for all the other spectra.

Transparent CH{sub 3}NH{sub 3}SnCl{sub 3}/Al-ZnO p-n heterojunction diode

Energy Technology Data Exchange (ETDEWEB)

Kumar, Sunil, E-mail: skbgudha@gmail.com; Ansari, Mohd Zubair; Khare, Neeraj [Department of Physics, Indian Institute of Technology, Hauz Khas, New Delhi, Delhi-110016 (India)

2016-05-23

A p-type Organic inorganic tin chloride (CH{sub 3}NH{sub 3}SnCl{sub 3}) perovskite thin film has been synthesized by solution method. An n-type 1% Al doped ZnO (AZO) film has been deposited on FTO substrate by ultrasonic assisted chemical vapor deposition technique. A transparent CH{sub 3}NH{sub 3}SnCl{sub 3}/AZO p-n heterojunction diode has been fabricated by spin coating technique. CH{sub 3}NH{sub 3}SnCl{sub 3}/AZO p-n heterojunction shows 75% transparency in the visible region. I-V characteristic of CH{sub 3}NH{sub 3}SnCl{sub 3}/AZO p-n heterojunction shows rectifying behavior of the diode. The diode parameters calculated as ideality factor η=2.754 and barrier height Φ= 0.76 eV. The result demonstrates the potentiality of CH{sub 3}NH{sub 3}SnCl{sub 3}/AZO p-n heterojunction for transparent electronics.

Vertically p-n-junctioned GaN nano-wire array diode fabricated on Si(111) using MOCVD.

Science.gov (United States)

Park, Ji-Hyeon; Kim, Min-Hee; Kissinger, Suthan; Lee, Cheul-Ro

2013-04-07

We demonstrate the fabrication of n-GaN:Si/p-GaN:Mg nanowire arrays on (111) silicon substrate by metal organic chemical vapor deposition (MOCVD) method .The nanowires were grown by a newly developed two-step growth process. The diameter of as-grown nanowires ranges from 300-400 nm with a density of 6-7 × 10(7) cm(-2). The p- and n-type doping of the nanowires is achieved with Mg and Si dopant species. Structural characterization by X-ray diffraction (XRD) and high-resolution transmission electron microscopy (HRTEM) indicates that the nanowires are relatively defect-free. The room-temperature photoluminescence emission with a strong peak at 370 nm indicates that the n-GaN:Si/p-GaN:Mg nanowire arrays have potential application in light-emitting nanodevices. The cathodoluminscence (CL) spectrum clearly shows a distinct optical transition of GaN nanodiodes. The nano-n-GaN:Si/p-GaN:Mg diodes were further completed using a sputter coating approach to deposit Au/Ni metal contacts. The polysilazane filler has been etched by a wet chemical etching process. The n-GaN:Si/p-GaN:Mg nanowire diode was fabricated for different Mg source flow rates. The current-voltage (I-V) measurements reveal excellent rectifying properties with an obvious turn-on voltage at 1.6 V for a Mg flow rate of 5 sccm (standard cubic centimeters per minute).

Crosstalk of HgCdTe LWIR n-on-p diode arrays

International Nuclear Information System (INIS)

Sun Yinghui; Zhang Bo; Yu Meifang; Liao Qingjun; Zhang Yan; Wen Xin; Jiang Peilu; Hu Xiaoning; Dai Ning

2009-01-01

Crosstalk of HgCdTe long-wavelength infrared (LWIR) n-on-p diode arrays was measured using scanning laser microscopy. During the measurement, HgCdTe diode arrays with different diode pitches were frontside illuminated by a He-Ne laser at liquid nitrogen temperature and room temperature. The experimental results show that crosstalk between the nearest neighboring diodes decreases exponentially as the diode pitch increases, and the factors that affect the obtained crosstalk are presented and analyzed. Crosstalk out of the nominal diode area (optically sensitive area) is also measured and discussed.

Experimental analysis and theoretical model for anomalously high ideality factors in ZnO/diamond p-n junction diode

International Nuclear Information System (INIS)

Wang Chengxin; Yang Guowei; Liu Hongwu; Han Yonghao; Luo Jifeng; Gao Chunxiao; Zou Guangtian

2004-01-01

High-quality heterojunctions between p-type diamond single-crystalline films and highly oriented n-type ZnO films were fabricated by depositing the p-type diamond single-crystal films on the I o -type diamond single crystal using a hot filament chemical vapor deposition, and later growing a highly oriented n-type ZnO film on the p-type diamond single-crystal film by magnetron sputtering. Interestingly, anomalously high ideality factors (n>>2.0) in the prepared ZnO/diamond p-n junction diode in the interim bias voltage range were measured. For this, detailed electronic characterizations of the fabricated p-n junction were conducted, and a theoretical model was proposed to clarify the much higher ideality factors of the special heterojunction diode

Origin analysis of expanded stacking faults by applying forward current to 4H-SiC p-i-n diodes

Science.gov (United States)

Hayashi, Shohei; Naijo, Takanori; Yamashita, Tamotsu; Miyazato, Masaki; Ryo, Mina; Fujisawa, Hiroyuki; Miyajima, Masaaki; Senzaki, Junji; Kato, Tomohisa; Yonezawa, Yoshiyuki; Kojima, Kazutoshi; Okumura, Hajime

2017-08-01

Stacking faults expanded by the application of forward current to 4H-SiC p-i-n diodes were observed using a transmission electron microscope to investigate the expansion origin. It was experimentally confirmed that long-zonal-shaped stacking faults expanded from basal-plane dislocations converted into threading edge dislocations. In addition, stacking fault expansion clearly penetrated into the substrate to a greater depth than the dislocation conversion point. This downward expansion of stacking faults strongly depends on the degree of high-density minority carrier injection.

Field profile tailoring in a-Si:H radiation detectors

International Nuclear Information System (INIS)

Fujieda, I.; Cho, G.; Conti, M.; Drewery, J.; Kaplan, S.N.; Perez-Mendez, V.; Quershi, S.; Wildermuth, D.; Street, R.A.

1990-03-01

The capability of tailoring the field profile in reverse-biased a-Si:H diodes by doping and/or manipulating electrode shapes opens a way to many interesting device structures. Charge collection in a-Si:H radiation detectors is improved for high LET particle detection by inserting thin doped layers into the i-layer of the usual p-i-n diode. This buried p-i-n structure enables us to apply higher reverse-bias and the electric field is enhanced in the mid i-layer. Field profiles of the new structures are calculated and the improved charge collection process is discussed. Also discussed is the possibility of field profile tailoring by utilizing the fixed space charges in i-layers and/or manipulating electrode shapes of the reverse-biased p-i-n diodes. 10 refs., 7 figs

Fabrication of p-CuO/n-ZnO heterojunction diode via sol-gel spin coating technique

Energy Technology Data Exchange (ETDEWEB)

Prabhu, Rajeev R., E-mail: rajeevrprabhu@gmail.com [Nanophotonic and Optoelectronic Devices Laboratory, Department of Physics, Cochin University of Science and Technology, Kochi 682 022 (India); Saritha, A.C.; Shijeesh, M.R. [Nanophotonic and Optoelectronic Devices Laboratory, Department of Physics, Cochin University of Science and Technology, Kochi 682 022 (India); Jayaraj, M.K. [Nanophotonic and Optoelectronic Devices Laboratory, Department of Physics, Cochin University of Science and Technology, Kochi 682 022 (India); Centre for Advanced Materials, Cochin University of Science and Technology, Kochi 682 022 (India)

2017-06-15

Highlights: • Facile all-solution growth of nanostructured p-CuO and n-ZnO TSO films is reported. • Annealing the films in air affects the structural, electrical and optical properties. • p-n heterojunction using these films was fabricated in ITO/n-ZnO/p-CuO/Au structure. • Transparent heterojunction diode performed well with a V{sub on} of 2.5 V and n of 3.15. • Fabricated p-CuO/n-ZnO heterojunction diode can be used for UV detector application. - Abstract: We report a facile all-solution approach for the growth of nanostructured p-CuO and n-ZnO thin films. The influence of annealing temperature on the physical properties of CuO and ZnO thin films was examined. XRD and Raman spectra depict the structural and phase purity of solution grown CuO and ZnO films. The electrical as well as the optical properties of thin films were also studied. The average optical transmission of CuO and ZnO thin films in the visible spectral region was found to be above 80 and 95% respectively. Band gap energy variations on annealing temperature were investigated for CuO as well as ZnO films. Surface morphology analyzed by FESEM shows that the films are very smooth. All solution grown p-n heterojunction using p-CuO and n-ZnO films was fabricated in the structure ITO/n-ZnO/p-CuO/Au which showed rectification behavior with a turn on voltage of 2.5 V and an ideality factor of 3.15.

High spatial resolution radiation detectors based on hydrogenated amorphous silicon and scintillator

International Nuclear Information System (INIS)

Jing, T.; Lawrence Berkeley Lab., CA

1995-05-01

Hydrogenated amorphous silicon (a-Si:H) as a large-area thin film semiconductor with ease of doping and low-cost fabrication capability has given a new impetus to the field of imaging sensors; its high radiation resistance also makes it a good material for radiation detectors. In addition, large-area microelectronics based on a-Si:H or polysilicon can be made with full integration of peripheral circuits, including readout switches and shift registers on the same substrate. Thin a-Si:H p-i-n photodiodes coupled to suitable scintillators are shown to be suitable for detecting charged particles, electrons, and X-rays. The response speed of CsI/a-Si:H diode combinations to individual particulate radiation is limited by the scintillation light decay since the charge collection time of the diode is very short (< 10ns). The reverse current of the detector is analyzed in term of contact injection, thermal generation, field enhanced emission (Poole-Frenkel effect), and edge leakage. A good collection efficiency for a diode is obtained by optimizing the p layer of the diode thickness and composition. The CsI(Tl) scintillator coupled to an a-Si:H photodiode detector shows a capability for detecting minimum ionizing particles with S/N ∼20. In such an arrangement a p-i-n diode is operated in a photovoltaic mode (reverse bias). In addition, a p-i-n diode can also work as a photoconductor under forward bias and produces a gain yield of 3--8 for shaping times of 1 micros. The mechanism of the formation of structured CsI scintillator layers is analyzed. Initial nucleation in the deposited layer is sensitive to the type of substrate medium, with imperfections generally catalyzing nucleation. Therefore, the microgeometry of a patterned substrate has a significant effect on the structure of the CsI growth

High spatial resolution radiation detectors based on hydrogenated amorphous silicon and scintillator

Energy Technology Data Exchange (ETDEWEB)

Jing, Tao [Univ. of California, Berkeley, CA (United States). Dept. of Engineering-Nuclear Engineering

1995-05-01

Hydrogenated amorphous silicon (a-Si:H) as a large-area thin film semiconductor with ease of doping and low-cost fabrication capability has given a new impetus to the field of imaging sensors; its high radiation resistance also makes it a good material for radiation detectors. In addition, large-area microelectronics based on a-Si:H or polysilicon can be made with full integration of peripheral circuits, including readout switches and shift registers on the same substrate. Thin a-Si:H p-i-n photodiodes coupled to suitable scintillators are shown to be suitable for detecting charged particles, electrons, and X-rays. The response speed of CsI/a-Si:H diode combinations to individual particulate radiation is limited by the scintillation light decay since the charge collection time of the diode is very short (< 10ns). The reverse current of the detector is analyzed in term of contact injection, thermal generation, field enhanced emission (Poole-Frenkel effect), and edge leakage. A good collection efficiency for a diode is obtained by optimizing the p layer of the diode thickness and composition. The CsI(Tl) scintillator coupled to an a-Si:H photodiode detector shows a capability for detecting minimum ionizing particles with S/N ~20. In such an arrangement a p-i-n diode is operated in a photovoltaic mode (reverse bias). In addition, a p-i-n diode can also work as a photoconductor under forward bias and produces a gain yield of 3--8 for shaping times of 1 {micro}s. The mechanism of the formation of structured CsI scintillator layers is analyzed. Initial nucleation in the deposited layer is sensitive to the type of substrate medium, with imperfections generally catalyzing nucleation. Therefore, the microgeometry of a patterned substrate has a significant effect on the structure of the CsI growth.

A Needle-Type p-i-n Junction Semiconductor Detector for In-Vivo Measurement of Beta Tracer Activity

Energy Technology Data Exchange (ETDEWEB)

Lauber, A; Rosencrantz, B

1964-10-15

A miniature detector probe has been developed for in-vivo detection of beta tracer activity. A lithium-drifted p-i-n detector shaped as a cylinder 0.9 mm in diameter and 3 mm long acts as the sensing element. The detector is encased in a stainless steel tube 50 mm long, fastened to a holder fitted with a miniature coaxial contact. The free end of the tube has a syringe-like, entirely tight tip. The steel tube has an outer diameter of 1.4 mm except for 10 mm at the free end where the outer diameter is 1.1 mm corresponding to a wall thickness of 005 mm. The detector is placed in the 1.1 mm part of the tube. The construction and the properties of the probe are described.

A Needle-Type p-i-n Junction Semiconductor Detector for In-Vivo Measurement of Beta Tracer Activity

International Nuclear Information System (INIS)

Lauber, A.; Rosencrantz, B.

1964-10-01

A miniature detector probe has been developed for in-vivo detection of beta tracer activity. A lithium-drifted p-i-n detector shaped as a cylinder 0.9 mm in diameter and 3 mm long acts as the sensing element. The detector is encased in a stainless steel tube 50 mm long, fastened to a holder fitted with a miniature coaxial contact. The free end of the tube has a syringe-like, entirely tight tip. The steel tube has an outer diameter of 1.4 mm except for 10 mm at the free end where the outer diameter is 1.1 mm corresponding to a wall thickness of 005 mm. The detector is placed in the 1.1 mm part of the tube. The construction and the properties of the probe are described

Space charge sign inversion and electric field reconstruction in 24 GeV/c proton-irradiated MCZ Si p+-n(TD)-n+ detectors processed via thermal donor introduction

International Nuclear Information System (INIS)

Li, Z.; Verbitskaya, E.; Carini, G.; Chen, W.; Eremin, V.; Gul, R.; Haerkoenen, J.; Li, M.

2009-01-01

The aim of this study is the evaluation of radiation effects in detectors based on p-type magnetic czochralski (MCZ) Si that was converted to n-type by thermal donor (TD) introduction. As-processed p + -p-n + detectors were annealed at 430 deg. C resulting in p + -n(TD)-n + structures. The space charge sign and the electric field distribution E(x) in MCz Si p + -n(TD)-n + detectors irradiated by 24 GeV/c protons were analyzed using the data on the current pulse response and the Double Peak (DP) electric field distribution model for heavily irradiated detectors. The approach considers an irradiated detector as a structure with three regions in which the electric field depends on the coordinate, and the induced current pulse response arises from the drift process of free carriers in the detector with variable electric field. Reconstruction of the E(x) profile from the pulse response shapes is performed employing a new method for DP electric field reconstruction. This method includes: (a) a direct extraction of charge loss due to trapping and (b) the fitting of a simulated pulse response to the 'corrected' pulse by adjusting the electric field profiles in the three regions. Reconstruction of E(x) distribution showed that in the diodes irradiated by a proton fluence of (2-4)x10 14 p/cm 2 space charge sign inversion has occurred. This is the evidence that the influence of 24 GeV/c proton radiation on MCz Si p + -n(TD)-n + detectors is similar to that on p + -n-n + detectors based on FZ or diffusion oxygenated n-type Si.

A new type photodiode: p-Si/GaN pn junction in series with GaN/Ag Schottky diode

Energy Technology Data Exchange (ETDEWEB)

Yakuphanoglu, F., E-mail: fyhanoglu@firat.edu.tr [Department of Physics, Faculty of Science, Firat University, Elazig (Turkey); Department of Physics, Faculty of Science, King Abdulaziz University, Jeddah (Saudi Arabia); Shokr, F.S. [Physics Department, Faculty of Science & Arts, King Abdulaziz University, Rabigh (Saudi Arabia); Gupta, R.K., E-mail: ramguptamsu@gmail.com [Department of Chemistry and Kansas Polymer Research Center, Pittsburg State University, Pittsburg (United States); Al-Ghamdi, Ahmed A. [Department of Physics, Faculty of Science, King Abdulaziz University, Jeddah (Saudi Arabia); Bin-Omran, S. [Department of Physics and Astronomy, College of Science, King Saud University, Riyadh (Saudi Arabia); Al-Turki, Yusuf [Department of Electrical and Computer Engineering, King Abdulaziz University, Jeddah (Saudi Arabia); El-Tantawy, Farid [Department of Physics, Faculty of Science, Suez Canal University, Ismailia (Egypt)

2015-11-25

Large quantities of gallium nitride (GaN) nanoparticles were successfully synthesized via a facile sol-gel approach. X-ray diffraction analysis confirms the polycrystalline nature of the GaN with hexagonal wurtzite structure and lattice constants a = 0.3189 nm and c = 0.5185 nm. The morphology of the GaN film was investigated by field emission scanning electron microscopy. The obtained results indicate that the synthesized GaN nanorods have an average length of around 60 nm and an average diameter of 23 nm. The optical band gap of the GaN film was obtained to be 3.4 eV. The gallium nitride/p-Si Schottky diode was fabricated by thermal evaporation technique on p-silicon. The current–voltage (I–V) characteristics of the fabricated diode was tested under dark and various light intensities. T The diode ideality factor and barrier height were computed using forward bias I–V characteristics of the diode and are found to be 1.66 and 0.53 eV, respectively. The obtained results suggest that the film preparation by sol gel method is fast and simple to prepare GaN based photodiode by according to metal organic deposition methods. - Highlights: • Facile method was used to synthesize GaN powder. • The Al/p-Si/GaN/Ag diode was fabricated using thermal evaporator technique. • Al/p-Si/GaN/Ag diode can be used as a photosensor for optoelectronic applications.

First results on the charge collection properties of segmented detectors made with p-type bulk silicon

International Nuclear Information System (INIS)

Casse, G.; Allport, P.P.; Bowcock, T.J.V.; Greenall, A.; Hanlon, M.; Jackson, J.N.

2002-01-01

Radiation damage of n-type bulk detectors introduces stable defects acting as effective p-type doping and leads to the change of the conductivity type of the silicon substrate (type inversion) after a fluence of a few times 10 13 protons cm -2 . The diode junction after inversion migrates from the original side to the back plane of the detector. The migration of the junction can be prevented using silicon detectors with p-type substrates. Furthermore, the use of n-side readout gives higher charge collection efficiency for segmented devices operated below the full depletion voltage. Large area (∼6.4x6.4 cm 2 ) capacitively coupled 80 μm pitch detectors using polysilicon bias resistors have been fabricated on p-type substrates (n-in-p diode structure). These detectors have been irradiated with 24 GeV/c protons to an integrated fluence of 3x10 14 cm -2 and kept for 7 days at 25 deg. C to reach the broad minimum of the annealing curve. Results are presented on the comparison of their charge collection properties with detectors using p-strip read-out after corresponding dose and annealing

Room-temperature-processed flexible n-InGaZnO/p-Cu2O heterojunction diodes and high-frequency diode rectifiers

International Nuclear Information System (INIS)

Chen, Wei-Chung; Hsu, Po-Ching; Chien, Chih-Wei; Chang, Kuei-Ming; Hsu, Chao-Jui; Chang, Ching-Hsiang; Lee, Wei-Kai; Chou, Wen-Fang; Wu, Chung-Chih; Hsieh, Hsing-Hung

2014-01-01

In this work, we report successful implementation of room-temperature-processed flexible n-InGaZnO/p-Cu 2 O heterojunction diodes on polyethylene naphthalate (PEN) plastic substrates using the sputtering technique. Using n-type InGaZnO and p-type Cu 2 O films deposited by sputtering at room temperature, flexible n-InGaZnO/p-Cu 2 O heterojunction diodes were successfully fabricated on PEN plastic substrates. The didoes on PEN substrates exhibited a low apparent turn-on voltage of 0.44 V, a high rectification ratio of up to 3.4 × 10 4 at ±1.2 V, a high forward current of 1 A cm −2 around 1 V and a decent ideality factor of 1.4, similar to the characteristics of n-InGaZnO/p-Cu 2 O diodes fabricated on glass substrates. The characterization of the frequency response of the room-temperature-processed flexible n-InGaZnO/p-Cu 2 O heterojunction diode rectifiers indicated that they are capable of high-frequency operation up to 27 MHz, sufficient for high-frequency (13.56 MHz) applications. Preliminary bending tests on diode characteristics and rectifier frequency responses indicate their promise for applications in flexible electronics. (paper)

Polarization-enhanced InGaN/GaN-based hybrid tunnel junction contacts to GaN p-n diodes and InGaN LEDs

Science.gov (United States)

Mughal, Asad J.; Young, Erin C.; Alhassan, Abdullah I.; Back, Joonho; Nakamura, Shuji; Speck, James S.; DenBaars, Steven P.

2017-12-01

Improved turn-on voltages and reduced series resistances were realized by depositing highly Si-doped n-type GaN using molecular beam epitaxy on polarization-enhanced p-type InGaN contact layers grown using metal-organic chemical vapor deposition. We compared the effects of different Si doping concentrations and the addition of p-type InGaN on the forward voltages of p-n diodes and light-emitting diodes, and found that increasing the Si concentrations from 1.9 × 1020 to 4.6 × 1020 cm-3 and including a highly doped p-type InGaN at the junction both contributed to reductions in the depletion width, the series resistance of 4.2 × 10-3-3.4 × 10-3 Ω·cm2, and the turn-on voltages of the diodes.

5.0 kV breakdown-voltage vertical GaN p-n junction diodes

Science.gov (United States)

Ohta, Hiroshi; Hayashi, Kentaro; Horikiri, Fumimasa; Yoshino, Michitaka; Nakamura, Tohru; Mishima, Tomoyoshi

2018-04-01

A high breakdown voltage of 5.0 kV has been achieved for the first time in vertical GaN p-n junction diodes by using our newly developed guard-ring structures. A resistance device was inserted between the main diode portion and the guard-ring portion in a ring-shaped p-n diode to generate a voltage drop over the resistance device by leakage current flowing through the guard-ring portion under negatively biased conditions before breakdown. The voltage at the outer mesa edge of the guard-ring portion, where the electric field intensity is highest and the destructive breakdown usually occurs, is decreased by the voltage drop, so the electric field concentration in the portion is reduced. By adopting this structure, the breakdown voltage (V B) is raised by about 200 V. Combined with a low measured on-resistance (R on) of 1.25 mΩ cm2, Baliga’s figure of merit (V\\text{B}2/R\\text{on}) was as high as 20 GW/cm2.

Electronic properties of Al/DNA/p-Si MIS diode: Application as temperature sensor

International Nuclear Information System (INIS)

Guellue, O.; Tueruet, A.

2011-01-01

Research highlights: → This work proposes that DNA molecules should be considered, among other candidates, as a potential organic thin film for metal-interface layer-semiconductor devices. → We successfully fabricated Al/DNA/p-Si device with interlayer by a simple cast method. → The temperature is found to significantly effect the electrical properties of the Al/DNA/p-Si device. → The facts: (i) that the technology of the fabrication of a Al/DNA/p-Si Schottky diode much simpler and economical than that for the Si p-n junction and (ii) the sensibility of the Al/DNA/p-Si Schottky diode as temperature sensor is 42% higher than that of a Si p-n junction, indicate that the Al/DNA/p-Si Schottky diode is a good alternative as temperature sensor. - Abstract: The current-voltage (I-V) measurements were performed in the temperature range (200-300 K) on Al/DNA/p-Si Schottky barrier type diodes. The Schottky diode shows non-ideal I-V behaviour with ideality factors n equal to 1.34 ± 0.02 and 1.70 ± 0.02 at 300 K and 200 K, respectively, and is thought to have a metal-interface layer-semiconductor (MIS) configuration. The zero-bias barrier height Φ b determined from the I-V measurements was 0.75 ± 0.01 eV at 300 K and decreases to 0.61 ± 0.01 eV at 200 K. The forward voltage-temperature (V F -T) characteristics were obtained from the I-V measurements in the temperature range 200-300 K at different activation currents (I F ) in the range 20 nA-6 μA. The V F -T characteristics were linear for three activation currents in the diode. From the V F -T characteristics at 20 nA, 100 nA and 6 μA, the values of the temperature coefficients of the forward bias voltage (dV F /dT) for the diode were determined as -2.30 mV K -1 , -2.60 mV K -1 and -3.26 mV K -1 with a standard error of 0.05 mV K -1 , respectively.

Electronic properties of Al/DNA/p-Si MIS diode: Application as temperature sensor

Energy Technology Data Exchange (ETDEWEB)

Guellue, O., E-mail: omergullu@gmail.com [Batman University, Science and Art Faculty, Department of Physics, 72060 Batman (Turkey); Osmaniye Korkut Ata University, Science and Art Faculty, Department of Physics, 80000 Osmaniye (Turkey); Tueruet, A. [Atatuerk University, Science Faculty, Department of Physics, 25240 Erzurum (Turkey)

2011-01-21

Research highlights: > This work proposes that DNA molecules should be considered, among other candidates, as a potential organic thin film for metal-interface layer-semiconductor devices. > We successfully fabricated Al/DNA/p-Si device with interlayer by a simple cast method. > The temperature is found to significantly effect the electrical properties of the Al/DNA/p-Si device. > The facts: (i) that the technology of the fabrication of a Al/DNA/p-Si Schottky diode much simpler and economical than that for the Si p-n junction and (ii) the sensibility of the Al/DNA/p-Si Schottky diode as temperature sensor is 42% higher than that of a Si p-n junction, indicate that the Al/DNA/p-Si Schottky diode is a good alternative as temperature sensor. - Abstract: The current-voltage (I-V) measurements were performed in the temperature range (200-300 K) on Al/DNA/p-Si Schottky barrier type diodes. The Schottky diode shows non-ideal I-V behaviour with ideality factors n equal to 1.34 {+-} 0.02 and 1.70 {+-} 0.02 at 300 K and 200 K, respectively, and is thought to have a metal-interface layer-semiconductor (MIS) configuration. The zero-bias barrier height {Phi}{sub b} determined from the I-V measurements was 0.75 {+-} 0.01 eV at 300 K and decreases to 0.61 {+-} 0.01 eV at 200 K. The forward voltage-temperature (V{sub F}-T) characteristics were obtained from the I-V measurements in the temperature range 200-300 K at different activation currents (I{sub F}) in the range 20 nA-6 {mu}A. The V{sub F}-T characteristics were linear for three activation currents in the diode. From the V{sub F}-T characteristics at 20 nA, 100 nA and 6 {mu}A, the values of the temperature coefficients of the forward bias voltage (dV{sub F}/dT) for the diode were determined as -2.30 mV K{sup -1}, -2.60 mV K{sup -1} and -3.26 mV K{sup -1} with a standard error of 0.05 mV K{sup -1}, respectively.

Solid State pH Sensor Based on Light Emitting Diodes (LED) As Detector Platform

OpenAIRE

Lau, King Tong; Shepherd, R.; Diamond, Danny; Diamond, Dermot

2006-01-01

A low-power, high sensitivity, very low-cost light emitting diode (LED)-based device developed for low-cost sensor networks was modified with bromocresol green membrane to work as a solid-state pH sensor. In this approach, a reverse-biased LED functioning as a photodiode is coupled with a second LED configured in conventional emission mode. A simple timer circuit measures how long (in microsecond) it takes for the photocurrent generated on the detector LED to discharge its capacitance from lo...

Investigations of thin p-GaN light-emitting diodes with surface plasmon compatible metallization

DEFF Research Database (Denmark)

Fadil, Ahmed; Ou, Yiyu; Iida, Daisuke

2016-01-01

We investigate device performance of InGaN light-emitting diodes with a 30-nm p-GaN layer. The metallization used to separate the p-contact from plasmonic metals, reveals limitations on current spreading which reduces surface plasmonic enhancement.......We investigate device performance of InGaN light-emitting diodes with a 30-nm p-GaN layer. The metallization used to separate the p-contact from plasmonic metals, reveals limitations on current spreading which reduces surface plasmonic enhancement....

Inhomogeneous barrier height effect on the current-voltage characteristics of an Au/n-InP Schottky diode

Science.gov (United States)

Zeghdar, Kamal; Dehimi, Lakhdar; Saadoune, Achour; Sengouga, Nouredine

2015-12-01

We report the current-voltage (I-V) characteristics of the Schottky diode (Au/n-InP) as a function of temperature. The SILVACO-TCAD numerical simulator is used to calculate the I-V characteristic in the temperature range of 280-400 K. This is to study the effect of temperature on the I-V curves and assess the main parameters that characterize the Schottky diode such as the ideality factor, the height of the barrier and the series resistance. The I-V characteristics are analyzed on the basis of standard thermionic emission (TE) theory and the inhomogeneous barrier heights (BHs) assuming a Gaussian distribution. It is shown that the ideality factor decreases while the barrier height increases with increasing temperature, on the basis of TE theory. Furthermore, the homogeneous BH value of approximately 0.524 eV for the device has been obtained from the linear relationship between the temperature-dependent experimentally effective BHs and ideality factors. The modified Richardson plot, according to the inhomogeneity of the BHs, has a good linearity over the temperature range. The evaluated Richardson constant A* was 10.32 A·cm-2·K-2, which is close to the theoretical value of 9.4 A·cm-2·K-2 for n-InP. The temperature dependence of the I-V characteristics of the Au/n-InP Schottky diode have been successfully explained on the basis of the thermionic emission (TE) mechanism with a Gaussian distribution of the Schottky barrier heights (SBHs). Simulated I-V characteristics are in good agreement with the measurements [Korucu D, Mammadov T S. J Optoelectronics Advanced Materials, 2012, 14: 41]. The barrier height obtained using Gaussian Schottky barrier distribution is 0.52 eV, which is about half the band gap of InP.

Recent technological developments on LGAD and iLGAD detectors for tracking and timing applications

Science.gov (United States)

Pellegrini, G.; Baselga, M.; Carulla, M.; Fadeyev, V.; Fernández-Martínez, P.; García, M. Fernández; Flores, D.; Galloway, Z.; Gallrapp, C.; Hidalgo, S.; Liang, Z.; Merlos, A.; Moll, M.; Quirion, D.; Sadrozinski, H.; Stricker, M.; Vila, I.

2016-09-01

This paper reports the latest technological development on the Low Gain Avalanche Detector (LGAD) and introduces a new architecture of these detectors called inverse-LGAD (iLGAD). Both approaches are based on the standard Avalanche Photo Diodes (APD) concept, commonly used in optical and X-ray detection applications, including an internal multiplication of the charge generated by radiation. The multiplication is inherent to the basic n++-p+-p structure, where the doping profile of the p+ layer is optimized to achieve high field and high impact ionization at the junction. The LGAD structures are optimized for applications such as tracking or timing detectors for high energy physics experiments or medical applications where time resolution lower than 30 ps is required. Detailed TCAD device simulations together with the electrical and charge collection measurements are presented through this work.

Recent technological developments on LGAD and iLGAD detectors for tracking and timing applications

International Nuclear Information System (INIS)

Pellegrini, G.; Baselga, M.; Carulla, M.; Fadeyev, V.; Fernández-Martínez, P.; García, M. Fernández; Flores, D.; Galloway, Z.; Gallrapp, C.; Hidalgo, S.; Liang, Z.; Merlos, A.; Moll, M.; Quirion, D.; Sadrozinski, H.; Stricker, M.; Vila, I.

2016-01-01

This paper reports the latest technological development on the Low Gain Avalanche Detector (LGAD) and introduces a new architecture of these detectors called inverse-LGAD (iLGAD). Both approaches are based on the standard Avalanche Photo Diodes (APD) concept, commonly used in optical and X-ray detection applications, including an internal multiplication of the charge generated by radiation. The multiplication is inherent to the basic n"+"+–p"+–p structure, where the doping profile of the p"+ layer is optimized to achieve high field and high impact ionization at the junction. The LGAD structures are optimized for applications such as tracking or timing detectors for high energy physics experiments or medical applications where time resolution lower than 30 ps is required. Detailed TCAD device simulations together with the electrical and charge collection measurements are presented through this work.

Recent technological developments on LGAD and iLGAD detectors for tracking and timing applications

Energy Technology Data Exchange (ETDEWEB)

Pellegrini, G.; Baselga, M.; Carulla, M. [Centro Nacional de Microelectrónica, IMB-CNM-CSIC, Barcelona (Spain); Fadeyev, V. [Santa Cruz Institute of Particle Physics SCIPP, Santa Cruz, CA (United States); Fernández-Martínez, P. [Centro Nacional de Microelectrónica, IMB-CNM-CSIC, Barcelona (Spain); García, M. Fernández [Instituto de Física de Cantabria IFCA-CSIC-UC, Santander (Spain); Flores, D. [Centro Nacional de Microelectrónica, IMB-CNM-CSIC, Barcelona (Spain); Galloway, Z. [Santa Cruz Institute of Particle Physics SCIPP, Santa Cruz, CA (United States); Gallrapp, C. [CERN, Geneva (Switzerland); Hidalgo, S. [Centro Nacional de Microelectrónica, IMB-CNM-CSIC, Barcelona (Spain); Liang, Z. [Santa Cruz Institute of Particle Physics SCIPP, Santa Cruz, CA (United States); Merlos, A. [Centro Nacional de Microelectrónica, IMB-CNM-CSIC, Barcelona (Spain); Moll, M. [CERN, Geneva (Switzerland); Quirion, D. [Centro Nacional de Microelectrónica, IMB-CNM-CSIC, Barcelona (Spain); Sadrozinski, H. [Santa Cruz Institute of Particle Physics SCIPP, Santa Cruz, CA (United States); Stricker, M. [CERN, Geneva (Switzerland); Vila, I. [Instituto de Física de Cantabria IFCA-CSIC-UC, Santander (Spain)

2016-09-21

This paper reports the latest technological development on the Low Gain Avalanche Detector (LGAD) and introduces a new architecture of these detectors called inverse-LGAD (iLGAD). Both approaches are based on the standard Avalanche Photo Diodes (APD) concept, commonly used in optical and X-ray detection applications, including an internal multiplication of the charge generated by radiation. The multiplication is inherent to the basic n{sup ++}–p{sup +}–p structure, where the doping profile of the p{sup +} layer is optimized to achieve high field and high impact ionization at the junction. The LGAD structures are optimized for applications such as tracking or timing detectors for high energy physics experiments or medical applications where time resolution lower than 30 ps is required. Detailed TCAD device simulations together with the electrical and charge collection measurements are presented through this work.

Heterojunction p-Cu2O/n-Ga2O3 diode with high breakdown voltage

Science.gov (United States)

Watahiki, Tatsuro; Yuda, Yohei; Furukawa, Akihiko; Yamamuka, Mikio; Takiguchi, Yuki; Miyajima, Shinsuke

2017-11-01

Heterojunction p-Cu2O/n-β-Ga2O3 diodes were fabricated on an epitaxially grown β-Ga2O3(001) layer. The reverse breakdown voltage of these p-n diodes reached 1.49 kV with a specific on-resistance of 8.2 mΩ cm2. The leakage current of the p-n diodes was lower than that of the Schottky barrier diode due to the higher barrier height against the electron. The ideality factor of the p-n diode was 1.31. It indicated that some portion of the recombination current at the interface contributed to the forward current, but the diffusion current was the dominant. The forward current more than 100 A/cm2 indicated the lower conduction band offset at the hetero-interface between Cu2O and Ga2O3 layers than that predicted from the bulk properties, resulting in such a high forward current without limitation. These results open the possibility of advanced device structures for wide bandgap Ga2O3 to achieve higher breakdown voltage and lower on-resistance.

Constant-current regulator improves tunnel diode threshold-detector performance

Science.gov (United States)

Cancro, C. A.

1965-01-01

Grounded-base transistor is placed in a tunnel diode threshold detector circuit, and a bias voltage is applied to the tunnel diode. This provides the threshold detector with maximum voltage output and overload protection.

Improvements in DC Current-Ioltage (I-V) Characteristics of n-GaN Schottky Diode using Metal Overlap Edge Termination

International Nuclear Information System (INIS)

Munir, T.; Aziz, A. A.; Abdullah, M. J.; Ain, M. F.

2010-01-01

Practical design of GaN Schottky diodes incorporating a field plate necessitates an understanding of how the addition of such plate affects the diode performance. In this paper, we investigated the effects on DC current-voltage (I-V) characteristics of n-GaN schottky diode by incorporating metal overlap edge termination. The thickness of the oxide film varies from 0.001 to 1 micron. Two-dimensional Atlas/Blaze simulations revealed that severe electric field crowding across the metal semiconductor contact will cause reliability concern and limit device breakdown voltage. DC current-voltage (I-V) measurements indicate that the forward currents are higher for thinner oxide film schottky diodes with metal overlap edge termination than those of unterminated schottky diodes. The forward current increased due to formation of an accumulation layer underneath the oxide layer. Extending the field plate to beyond periphery regions of schottky contact does not result in any significant increase in forward current. The new techniques of ramp oxide metal overlap edge termination have been implemented to increase the forward current of n-GaN schottky diode. In reverse bias, breakdown voltage increased with edge termination oxide up to a certain limit of oxide thickness.

Development of Schottky diode detectors at Research Institute of Electrical Communication, Tohoku University

International Nuclear Information System (INIS)

Mizuno, K.; Ono, S.; Suzuki, T.; Daiku, Y.

1982-01-01

Schottky diode detectors are widely used as fast, sensitive submillimeter detectors in plasma physics, radio astronomy, frequency standards and so on. In this paper, the research on submillimeter Schottky diodes at Tohoku University is described. A brief description is given on the theoretical examination of diode parameters for video detection in design and on the fabrication of n/n + GaAs Schottky diode chips. Antennas for Schottky barrier diodes are discussed. Three types of antenna structures have been proposed, and used for whisker-contacted Schottky diodes so far. These are compared with each other for their frequency response and gain. The bicone type antenna is promising because of its larger frequency response, but the optimum design for this type of antenna has not yet sufficiently been obtained. As the application of Schottky barrier diodes, the intensity modulation of submillimeter laser and a quasi-optically coupled harmonic mixer have been studied. The modulation degree of about 4 % for HCN laser output has been so far obtained at the maximum modulation frequency of 2 GHz. Since 1976, a quasi-optically coupled harmonic mixer has been used with a Schottky diode in harmonic mixing between microwaves, millimeter waves, and submillimeter waves. (Wakatsuki, Y.)

Titanium-dioxide nanotube p-n homojunction diode

Science.gov (United States)

Alivov, Yahya; Ding, Yuchen; Singh, Vivek; Nagpal, Prashant

2014-12-01

Application of semiconductors in functional optoelectronic devices requires precise control over their doping and formation of junction between p- and n-doped semiconductors. While doped thin films have led to several semiconductor devices, need for high-surface area nanostructured devices for photovoltaic, photoelectrochemical, and photocatalytic applications has been hindered by lack of desired doping in nanostructures. Here, we show titanium-dioxide (TiO2) nanotubes doped with nitrogen (N) and niobium (Nb) as acceptors and donors, respectively, and formation of TiO2 nanotubes p-n homojunction. This TiO2:N/TiO2:Nb homojunction showed distinct diode-like behaviour with rectification ratio of 1115 at ±5 V and exhibited good photoresponse for ultraviolet light (λ = 365 nm) with sensitivity of 0.19 A/W at reverse bias of -5 V. These results can have important implications for development of nanostructured metal-oxide solar-cells, photodiodes, LED's, photocatalysts, and photoelectrochemical devices.

Titanium-dioxide nanotube p-n homojunction diode

Energy Technology Data Exchange (ETDEWEB)

Alivov, Yahya, E-mail: y.alivov@colorado.edu, E-mail: pnagpal@colorado.edu; Ding, Yuchen; Singh, Vivek [Department of Chemical and Biological Engineering, University of Colorado Boulder, 3415 Colorado Avenue, Boulder, Colorado 80303 (United States); Nagpal, Prashant, E-mail: y.alivov@colorado.edu, E-mail: pnagpal@colorado.edu [Department of Chemical and Biological Engineering, University of Colorado Boulder, 3415 Colorado Avenue, Boulder, Colorado 80303 (United States); Materials Science and Engineering, University of Colorado Boulder, 3415 Colorado Avenue, Boulder, Colorado 80303 (United States); Renewable and Sustainable Energy Institute, University of Colorado Boulder, 2445 Kittredge Loop, Boulder, Colorado 80309 (United States)

2014-12-29

Application of semiconductors in functional optoelectronic devices requires precise control over their doping and formation of junction between p- and n-doped semiconductors. While doped thin films have led to several semiconductor devices, need for high-surface area nanostructured devices for photovoltaic, photoelectrochemical, and photocatalytic applications has been hindered by lack of desired doping in nanostructures. Here, we show titanium-dioxide (TiO{sub 2}) nanotubes doped with nitrogen (N) and niobium (Nb) as acceptors and donors, respectively, and formation of TiO{sub 2} nanotubes p-n homojunction. This TiO{sub 2}:N/TiO{sub 2}:Nb homojunction showed distinct diode-like behaviour with rectification ratio of 1115 at ±5 V and exhibited good photoresponse for ultraviolet light (λ = 365 nm) with sensitivity of 0.19 A/W at reverse bias of −5 V. These results can have important implications for development of nanostructured metal-oxide solar-cells, photodiodes, LED's, photocatalysts, and photoelectrochemical devices.

Monte Carlo simulation of THz radiation from GaAs p-i-n diodes under high electric fields using an extended valley model

International Nuclear Information System (INIS)

Dinh Nhu Thao

2008-01-01

We have applied a self-consistent ensemble Monte Carlo simulation procedure using an extended valley model to consider the THz radiation from GaAs p-i-n diodes under high electric fields. The present calculation has shown an important improvement of the numerical results when using this model instead of the usual valley model. It has been shown the importance of the full band-structure in the simulation of processes in semiconductors, especially under the influence of high electric fields. (author)

Optically transparent ZnO-based n-i-p ultraviolet photodetectors

International Nuclear Information System (INIS)

Wang, Kai; Vygranenko, Yuriy; Nathan, Arokia

2007-01-01

An optically transparent tin-doped indium oxide/ZnO/NiO n-i-p heterostructure photodiode was fabricated by ion beam assisted e-beam evaporation. The diode clearly demonstrates rectifying current-voltage (J-V) characteristics with a current rectification ratio up to 10 4 at bias ± 2 V and a low reverse current of ∼ 100 nA/cm 2 at - 5 V. Analysis of J-V characteristics including time dependence of the dark current shows that the leakage current at low biases is attributed to thermal generation via defect states, and at high biases, field-enhanced carrier generation from the ZnO layer dominates. Spectral response and linearity measurements indicate that such a diode is particularly suitable for low level of ultraviolet detection

Resonant metallic nanostructure for enhanced two-photon absorption in a thin GaAs p-i-n diode

Energy Technology Data Exchange (ETDEWEB)

Portier, Benjamin; Pardo, Fabrice; Péré-Laperne, Nicolas; Steveler, Emilie; Dupuis, Christophe; Bardou, Nathalie; Lemaître, Aristide; Pelouard, Jean-Luc, E-mail: jean-luc.pelouard@lpn.cnrs.fr [Laboratoire de Photonique et de Nanostructures (LPN-CNRS), Route de Nozay, 91460 Marcoussis (France); Vest, Benjamin; Jaeck, Julien; Rosencher, Emmanuel [ONERA The French Aerospace Lab, Chemin de la Hunière, F-91760 Palaiseau (France); Haïdar, Riad [ONERA The French Aerospace Lab, Chemin de la Hunière, F-91760 Palaiseau (France); École Polytechnique, Département de Physique, F-91128 Palaiseau (France)

2014-07-07

Degenerate two-photon absorption (TPA) is investigated in a 186 nm thick gallium arsenide (GaAs) p-i-n diode embedded in a resonant metallic nanostructure. The full device consists in the GaAs layer, a gold subwavelength grating on the illuminated side, and a gold mirror on the opposite side. For TM-polarized light, the structure exhibits a resonance close to 1.47 μm, with a confined electric field in the intrinsic region, far from the metallic interfaces. A 109 times increase in photocurrent compared to a non-resonant device is obtained experimentally, while numerical simulations suggest that both gain in TPA-photocurrent and angular dependence can be further improved. For optimized grating parameters, a maximum gain of 241 is demonstrated numerically and over incidence angle range of (−30°; +30°).

Resonant metallic nanostructure for enhanced two-photon absorption in a thin GaAs p-i-n diode

International Nuclear Information System (INIS)

Portier, Benjamin; Pardo, Fabrice; Péré-Laperne, Nicolas; Steveler, Emilie; Dupuis, Christophe; Bardou, Nathalie; Lemaître, Aristide; Pelouard, Jean-Luc; Vest, Benjamin; Jaeck, Julien; Rosencher, Emmanuel; Haïdar, Riad

2014-01-01

Degenerate two-photon absorption (TPA) is investigated in a 186 nm thick gallium arsenide (GaAs) p-i-n diode embedded in a resonant metallic nanostructure. The full device consists in the GaAs layer, a gold subwavelength grating on the illuminated side, and a gold mirror on the opposite side. For TM-polarized light, the structure exhibits a resonance close to 1.47 μm, with a confined electric field in the intrinsic region, far from the metallic interfaces. A 109 times increase in photocurrent compared to a non-resonant device is obtained experimentally, while numerical simulations suggest that both gain in TPA-photocurrent and angular dependence can be further improved. For optimized grating parameters, a maximum gain of 241 is demonstrated numerically and over incidence angle range of (−30°; +30°).

Low absorption loss p-AlGaN superlattice cladding layer for current-injection deep ultraviolet laser diodes

Energy Technology Data Exchange (ETDEWEB)

Martens, M.; Kuhn, C.; Ziffer, E.; Simoneit, T.; Rass, J.; Wernicke, T. [Institute of Solid State Physics, Technische Universität Berlin, Hardenbergstr. 36, EW 6-1, 10623 Berlin (Germany); Kueller, V.; Knauer, A.; Einfeldt, S.; Weyers, M. [Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Str. 4, 12489 Berlin (Germany); Kneissl, M. [Institute of Solid State Physics, Technische Universität Berlin, Hardenbergstr. 36, EW 6-1, 10623 Berlin (Germany); Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Str. 4, 12489 Berlin (Germany)

2016-04-11

Current injection into AlGaN-based laser diode structures with high aluminum mole fractions for deep ultraviolet emission is investigated. The electrical characteristics of laser diode structures with different p-AlGaN short period superlattice (SPSL) cladding layers with various aluminum mole fractions are compared. The heterostructures contain all elements that are needed for a current-injection laser diode including cladding and waveguide layers as well as an AlGaN quantum well active region emitting near 270 nm. We found that with increasing aluminum content in the p-AlGaN cladding, the diode turn-on voltage increases, while the series resistance slightly decreases. By introducing an SPSL instead of bulk layers, the operating voltage is significantly reduced. A gain guided broad area laser diode structure with transparent p-Al{sub 0.70}Ga{sub 0.30}N waveguide layers and a transparent p-cladding with an average aluminum content of 81% was designed for strong confinement of the transverse optical mode and low optical losses. Using an optimized SPSL, this diode could sustain current densities of more than 4.5 kA/cm{sup 2}.

Low absorption loss p-AlGaN superlattice cladding layer for current-injection deep ultraviolet laser diodes

International Nuclear Information System (INIS)

Martens, M.; Kuhn, C.; Ziffer, E.; Simoneit, T.; Rass, J.; Wernicke, T.; Kueller, V.; Knauer, A.; Einfeldt, S.; Weyers, M.; Kneissl, M.

2016-01-01

Current injection into AlGaN-based laser diode structures with high aluminum mole fractions for deep ultraviolet emission is investigated. The electrical characteristics of laser diode structures with different p-AlGaN short period superlattice (SPSL) cladding layers with various aluminum mole fractions are compared. The heterostructures contain all elements that are needed for a current-injection laser diode including cladding and waveguide layers as well as an AlGaN quantum well active region emitting near 270 nm. We found that with increasing aluminum content in the p-AlGaN cladding, the diode turn-on voltage increases, while the series resistance slightly decreases. By introducing an SPSL instead of bulk layers, the operating voltage is significantly reduced. A gain guided broad area laser diode structure with transparent p-Al_0_._7_0Ga_0_._3_0N waveguide layers and a transparent p-cladding with an average aluminum content of 81% was designed for strong confinement of the transverse optical mode and low optical losses. Using an optimized SPSL, this diode could sustain current densities of more than 4.5 kA/cm"2.

One-cm-thick Si detector at LHe temperature

Energy Technology Data Exchange (ETDEWEB)

Braggio, C. [Dipartimento di Fisica, Universita di Ferrara, Via Saragat 1, 44100 Ferrara (Italy)], E-mail: braggio@pd.infn.it; Bressi, G. [INFN, Sez. di Pavia, Via Bassi 6, 27100 Pavia (Italy); Carugno, G. [INFN, Sez. di Padova, Via Marzolo 8, 35131 Padova (Italy); Galeazzi, G. [Laboratori Nazionali di Legnaro, Via dell' Universita 1, 35020 Legnaro (Italy); Serafin, A. [Dipartimento di Fisica, Universita di Padova, Via Marzolo 8, 35131 Padova (Italy)

2007-10-11

A silicon p-i-n diode of thickness 1 cm has been studied experimentally at liquid helium temperature. This preliminary study is aimed at the construction of a much bigger detector to detect low energy neutrino events.

One-cm-thick Si detector at LHe temperature

International Nuclear Information System (INIS)

Braggio, C.; Bressi, G.; Carugno, G.; Galeazzi, G.; Serafin, A.

2007-01-01

A silicon p-i-n diode of thickness 1 cm has been studied experimentally at liquid helium temperature. This preliminary study is aimed at the construction of a much bigger detector to detect low energy neutrino events

Characterization of plasma etching damage on p-type GaN using Schottky diodes

International Nuclear Information System (INIS)

Kato, M.; Mikamo, K.; Ichimura, M.; Kanechika, M.; Ishiguro, O.; Kachi, T.

2008-01-01

The plasma etching damage in p-type GaN has been characterized. From current-voltage and capacitance-voltage characteristics of Schottky diodes, it was revealed that inductively coupled plasma (ICP) etching causes an increase in series resistance of the Schottky diodes and compensation of acceptors in p-type GaN. We investigated deep levels near the valence band of p-type GaN using current deep level transient spectroscopy (DLTS), and no deep level originating from the ICP etching damage was observed. On the other hand, by capacitance DLTS measurements for n-type GaN, we observed an increase in concentration of a donor-type defect with an activation energy of 0.25 eV after the ICP etching. The origin of this defect would be due to nitrogen vacancies. We also observed this defect by photocapacitance measurements for ICP-etched p-type GaN. For both n- and p-type GaN, we found that the low bias power ICP etching is effective to reduce the concentration of this defect introduced by the high bias power ICP etching

Dual-polarization wavelength conversion of 16-QAM signals in a single silicon waveguide with a lateral p-i-n diode [Invited

DEFF Research Database (Denmark)

Da Ros, Francesco; Gajda, Andrzej; Liebig, Erik

2018-01-01

with an optical signal-to-noise ratio penalty below 0.7 dB. High-quality converted signals are generated thanks to the low polarization dependence (≤0.5 dB) and the high conversion efficiency (CE) achievable. The strong Kerr nonlinearity in silicon and the decrease of detrimental free-carrier absorption due......A polarization-diversity loop with a silicon waveguide with a lateral p-i-n diode as a nonlinear medium is used to realize polarization insensitive four-wave mixing. Wavelength conversion of seven dual-polarization 16-quadrature amplitude modulation (QAM) signals at 16 GBd is demonstrated...

Horizontal Assembly of Single Nanowire Diode Fabricated by p-n Junction GaN NW Grown by MOCVD

Directory of Open Access Journals (Sweden)

Ji-Hyeon Park

2014-01-01

Full Text Available Uniaxially p-n junction gallium nitride nanowires have been synthesized via metal-organic chemical vapor deposition method. Nanowires prepared on Si(111 substrates were found to grow perpendicular to the substrate, and the transmission electron microscopy studies demonstrated that the nanowires had singlecrystalline structures with a growth axis. The parallel assembly of the p-n junction nanowire was prepared on a Si substrate with a thermally grown SiO2 layer. The transport studies of horizontal gallium nitride nanowire structures assembled from p- and n-type materials show that these junctions correspond to well-defined p-n junction diodes. The p-n junction devices based on GaN nanowires suspended over the electrodes were fabricated and their electrical properties were investigated. The horizontally assembled gallium nitride nanowire diodes suspended over the electrodes exhibited a substantial increase in conductance under UV light exposure. Apart from the selectivity to different light wavelengths, high responsivity and extremely short response time have also been obtained.

Growth and characterization of n-ZnO/p-GaN nanorods on silicon for the fabrication of heterojunction diodes

Energy Technology Data Exchange (ETDEWEB)

Guan-Hung Shen [Department of Chemical Engineering, National Cheng Kung University, Tainan 70101, Taiwan (China); Hong, Franklin Chau-Nan, E-mail: hong@mail.ncku.edu.tw [Department of Chemical Engineering, National Cheng Kung University, Tainan 70101, Taiwan (China); Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 70101, Taiwan (China); Center for Micro/Nano Science and Technology, National Cheng Kung University, Tainan 70101, Taiwan (China); NCKU Research Center for Energy Technology and Strategy, National Cheng Kung University, Tainan 70101, Taiwan (China)

2014-11-03

A heterojunction n-ZnO/p-GaN diode device was fabricated and characterized on Si (111) substrate. Vertically-aligned Mg-doped GaN nanorods (NRs) were grown on Si (111) by plasma assisted chemical vapor deposition. Intrinsic n-type ZnO was subsequently grown on top of p-GaN nanorods by hydrothermal method at low temperature. The effects of precursor concentrations on the morphology and optical properties of ZnO nanostructures were investigated. Various ZnO nanostructures could be synthesized to obtain different heterojunction nanostructures. The high resolution transmission electron microscopy and selected area electron diffraction results further verified that the GaN NRs were single crystals with the growth orientation along [0001], and the epitaxial wurtzite ZnO films were grown on GaN NRs. The n-ZnO film/p-GaN NR heterojunction diodes were thus fabricated. Diode-like rectifying behavior was actually observed with a leakage current of less than 2.0 × 10{sup −4} A at − 20 V bias, a forward current of 7.2 × 10{sup −3} A at 20 V bias, and the turn-on voltage at around 5.6 V. - Highlights: • High-quality zinc oxide layer was epitaxially grown on gallium nitride nanorods. • The morphology of zinc oxide can be controlled by varying the growth conditions. • The n-zinc oxide/p-gallium nitride diodes with rectifying behavior were fabricated.

Growth and characterization of n-ZnO/p-GaN nanorods on silicon for the fabrication of heterojunction diodes

International Nuclear Information System (INIS)

Guan-Hung Shen; Hong, Franklin Chau-Nan

2014-01-01

A heterojunction n-ZnO/p-GaN diode device was fabricated and characterized on Si (111) substrate. Vertically-aligned Mg-doped GaN nanorods (NRs) were grown on Si (111) by plasma assisted chemical vapor deposition. Intrinsic n-type ZnO was subsequently grown on top of p-GaN nanorods by hydrothermal method at low temperature. The effects of precursor concentrations on the morphology and optical properties of ZnO nanostructures were investigated. Various ZnO nanostructures could be synthesized to obtain different heterojunction nanostructures. The high resolution transmission electron microscopy and selected area electron diffraction results further verified that the GaN NRs were single crystals with the growth orientation along [0001], and the epitaxial wurtzite ZnO films were grown on GaN NRs. The n-ZnO film/p-GaN NR heterojunction diodes were thus fabricated. Diode-like rectifying behavior was actually observed with a leakage current of less than 2.0 × 10 −4 A at − 20 V bias, a forward current of 7.2 × 10 −3 A at 20 V bias, and the turn-on voltage at around 5.6 V. - Highlights: • High-quality zinc oxide layer was epitaxially grown on gallium nitride nanorods. • The morphology of zinc oxide can be controlled by varying the growth conditions. • The n-zinc oxide/p-gallium nitride diodes with rectifying behavior were fabricated

Trap assisted space charge conduction in p-NiO/n-ZnO heterojunction diode

International Nuclear Information System (INIS)

Tyagi, Manisha; Tomar, Monika; Gupta, Vinay

2015-01-01

Highlights: • p-NiO/n-ZnO heterojunction diode with enhanced junction parameters has been prepared. • Temperature dependent I–V throw insight into the involved conduction mechanism. • SCLC with exponential trap distribution was found to be the dominant mechanism. • C–V measurement at different frequencies support the presence of traps. - Abstract: The development of short-wavelength p–n junction is essentially important for the realization of transparent electronics for next-generation optoelectronic devices. In the present work, a p–n heterojunction diode based on p-NiO/n-ZnO has been prepared under the optimised growth conditions exhibiting improved electrical and junction parameters. The fabricated heterojunction gives typical current–voltage (I–V) characteristics with good rectifying behaviour (rectification ratio ≈ 10 4 at 2 V). The temperature dependent current–voltage characteristics of heterojunction diode have been studied and origin of conduction mechanism is identified. The space-charge limited conduction with exponential trap distribution having deep level trap is found to be the dominant conduction mechanism in the fabricated p–n heterojunction diode. The conduction and valence band discontinuities for NiO/ZnO heterostructure have been determined from the capacitance–voltage (C–V) measurements

Room temperature current-voltage (I-V) characteristics of Ag/InGaN/n-Si Schottky barrier diode

Energy Technology Data Exchange (ETDEWEB)

Erdoğan, Erman, E-mail: e.erdogan@alparslan.edu.tr [Department of Physics, Faculty of Art and Science, Muş Alparslan University, Muş 49250 (Turkey); Kundakçı, Mutlu [Department of Physics, Faculty of Science, Atatürk University, Erzurum 25240 (Turkey)

2017-02-01

Metal-semiconductors (MSs) or Schottky barrier diodes (SBDs) have a significant potential in the integrated device technology. In the present paper, electrical characterization of Ag/InGaN/n-Si Schottky diode have been systematically carried out by simple Thermionic method (TE) and Norde function based on the I-V characteristics. Ag ohmic and schottky contacts are deposited on InGaN/n-Si film by thermal evaporation technique under a vacuum pressure of 1×10{sup −5} mbar. Ideality factor, barrier height and series resistance values of this diode are determined from I-V curve. These parameters are calculated by TE and Norde methods and findings are given in a comparetive manner. The results show the consistency for both method and also good agreement with other results obtained in the literature. The value of ideality factor and barrier height have been determined to be 2.84 and 0.78 eV at room temperature using simple TE method. The value of barrier height obtained with Norde method is calculated as 0.79 eV.

Room temperature current-voltage (I-V) characteristics of Ag/InGaN/n-Si Schottky barrier diode

Science.gov (United States)

Erdoğan, Erman; Kundakçı, Mutlu

2017-02-01

Metal-semiconductors (MSs) or Schottky barrier diodes (SBDs) have a significant potential in the integrated device technology. In the present paper, electrical characterization of Ag/InGaN/n-Si Schottky diode have been systematically carried out by simple Thermionic method (TE) and Norde function based on the I-V characteristics. Ag ohmic and schottky contacts are deposited on InGaN/n-Si film by thermal evaporation technique under a vacuum pressure of 1×10-5 mbar. Ideality factor, barrier height and series resistance values of this diode are determined from I-V curve. These parameters are calculated by TE and Norde methods and findings are given in a comparetive manner. The results show the consistency for both method and also good agreement with other results obtained in the literature. The value of ideality factor and barrier height have been determined to be 2.84 and 0.78 eV at room temperature using simple TE method. The value of barrier height obtained with Norde method is calculated as 0.79 eV.

Enhancement of breakdown voltage for fully-vertical GaN-on-Si p-n diode by using strained layer superlattice as drift layer

Science.gov (United States)

Mase, Suguru; Hamada, Takeaki; Freedsman, Joseph J.; Egawa, Takashi

2018-06-01

We have demonstrated a vertical GaN-on-Si p-n diode with breakdown voltage (BV) as high as 839 V by using a low Si-doped strained layer superlattice (SLS). The p-n vertical diode fabricated by using the n‑-SLS layer as a part of the drift layer showed a remarkable enhancement in BV, when compared with the conventional n‑-GaN drift layer of similar thickness. The vertical GaN-on-Si p-n diodes with 2.3 μm-thick n‑-GaN drift layer and 3.0 μm-thick n‑-SLS layer exhibited a differential on-resistance of 4.0 Ω · cm2 and a BV of 839 V.

Design and experimental testing of air slab caps which convert commercial electron diodes into dual purpose, correction-free diodes for small field dosimetry

Energy Technology Data Exchange (ETDEWEB)

Charles, P. H., E-mail: paulcharles111@gmail.com [Department of Radiation Oncology, Princess Alexandra Hospital, Ipswich Road, Woolloongabba, Brisbane, Queensland 4102, Australia and School of Chemistry, Physics and Mechanical Engineering, Queensland University of Technology, GPO Box 2434, Brisbane, Queensland 4001 (Australia); Cranmer-Sargison, G. [Department of Medical Physics, Saskatchewan Cancer Agency, 20 Campus Drive, Saskatoon, Saskatchewan S7L 3P6, Canada and College of Medicine, University of Saskatchewan, 107 Wiggins Road, Saskatoon, Saskatchewan S7N 5E5 (Canada); Thwaites, D. I. [Institute of Medical Physics, School of Physics, University of Sydney, New South Wales 2006 (Australia); Kairn, T. [School of Chemistry, Physics and Mechanical Engineering, Queensland University of Technology, GPO Box 2434, Brisbane, Queensland 4001, Australia and Genesis CancerCare Queensland, The Wesley Medical Centre, Suite 1, 40 Chasely Street, Auchenflower, Brisbane, Queensland 4066 (Australia); Crowe, S. B.; Langton, C. M.; Trapp, J. V. [School of Chemistry, Physics and Mechanical Engineering, Queensland University of Technology, GPO Box 2434, Brisbane, Queensland 4001 (Australia); Pedrazzini, G. [Genesis CancerCare Queensland, The Wesley Medical Centre, Suite 1, 40 Chasely Street, Auchenflower, Brisbane, Queensland 4066 (Australia); Aland, T.; Kenny, J. [Epworth Radiation Oncology, 89 Bridge Road, Richmond, Melbourne, Victoria 3121 (Australia)

2014-10-15

Purpose: Two diodes which do not require correction factors for small field relative output measurements are designed and validated using experimental methodology. This was achieved by adding an air layer above the active volume of the diode detectors, which canceled out the increase in response of the diodes in small fields relative to standard field sizes. Methods: Due to the increased density of silicon and other components within a diode, additional electrons are created. In very small fields, a very small air gap acts as an effective filter of electrons with a high angle of incidence. The aim was to design a diode that balanced these perturbations to give a response similar to a water-only geometry. Three thicknesses of air were placed at the proximal end of a PTW 60017 electron diode (PTWe) using an adjustable “air cap”. A set of output ratios (OR{sub Det}{sup f{sub c}{sub l}{sub i}{sub n}}) for square field sizes of side length down to 5 mm was measured using each air thickness and compared to OR{sub Det}{sup f{sub c}{sub l}{sub i}{sub n}} measured using an IBA stereotactic field diode (SFD). k{sub Q{sub c{sub l{sub i{sub n,Q{sub m{sub s{sub r}{sup f{sub c}{sub l}{sub i}{sub n},f{sub m}{sub s}{sub r}}}}}}}}} was transferred from the SFD to the PTWe diode and plotted as a function of air gap thickness for each field size. This enabled the optimal air gap thickness to be obtained by observing which thickness of air was required such that k{sub Q{sub c{sub l{sub i{sub n,Q{sub m{sub s{sub r}{sup f{sub c}{sub l}{sub i}{sub n},f{sub m}{sub s}{sub r}}}}}}}}} was equal to 1.00 at all field sizes. A similar procedure was used to find the optimal air thickness required to make a modified Sun Nuclear EDGE detector (EDGEe) which is “correction-free” in small field relative dosimetry. In addition, the feasibility of experimentally transferring k{sub Q{sub c{sub l{sub i{sub n,Q{sub m{sub s{sub r}{sup f{sub c}{sub l}{sub i}{sub n},f{sub m}{sub s}{sub r

Compact CsI(Tl)-PIN detectors for nuclear physics applications

International Nuclear Information System (INIS)

Bhattacharjee, T.; Basu, S.K.; Bhattacharyya, S.; Chanda, S.; Chowdhury, A.; Mukhopadhyay, P.; Chatterjee, M.B.; Dey, C.C.; Mukherjee, Anjali

2005-01-01

Prototype detector elements, based on CsI(Tl) - Si PIN diodes, have been fabricated and optimized for use in a near 4p charged particle multiplicity filter array. The important aspects of fabrication of such compact detector elements along with the off-line and on-line performance test results will be reported. An early implementation of the proposed multiplicity filter array will be described. The planned use of the array in conjunction with the Indian National Gamma Array (INGA) as a reaction filter in high spin spectroscopic studies would be stressed. (author)

VUV and ultrasoft X-ray diode detectors for tokamak plasmas

International Nuclear Information System (INIS)

Lee, P.; Snider, R.T.; Gernhardt, J.; Armontrout, C.J.

1987-11-01

Ultrasoft X-ray diode (USXRD) arrays have been used on D-IIID and ASDEX to study plasma edge radiation, in the photon energy range from 10 eV to 10 keV. The detectors are extremely useful and versatile due to their simplicity and compactness. Furthermore, absolute quantum efficiencies (QE) of many photocathodes such as vitreous C, Al, Cu CuI, CsI and Au have been measured in recent years. With filter technique, broadband resolution, E/ΔE ≅ 1, is possible. QE comparison of USXRD with semiconductor XRD is also presented to better understand the regions of applicability for each detector. (orig.)

Trap assisted space charge conduction in p-NiO/n-ZnO heterojunction diode

Energy Technology Data Exchange (ETDEWEB)

Tyagi, Manisha [Department of Physics and Astrophysics, University of Delhi, Delhi-110007 (India); Tomar, Monika [Physics department, Miranda House, University of Delhi, Delhi-110007 (India); Gupta, Vinay, E-mail: drguptavinay@gmail.com [Department of Physics and Astrophysics, University of Delhi, Delhi-110007 (India)

2015-06-15

Highlights: • p-NiO/n-ZnO heterojunction diode with enhanced junction parameters has been prepared. • Temperature dependent I–V throw insight into the involved conduction mechanism. • SCLC with exponential trap distribution was found to be the dominant mechanism. • C–V measurement at different frequencies support the presence of traps. - Abstract: The development of short-wavelength p–n junction is essentially important for the realization of transparent electronics for next-generation optoelectronic devices. In the present work, a p–n heterojunction diode based on p-NiO/n-ZnO has been prepared under the optimised growth conditions exhibiting improved electrical and junction parameters. The fabricated heterojunction gives typical current–voltage (I–V) characteristics with good rectifying behaviour (rectification ratio ≈ 10{sup 4} at 2 V). The temperature dependent current–voltage characteristics of heterojunction diode have been studied and origin of conduction mechanism is identified. The space-charge limited conduction with exponential trap distribution having deep level trap is found to be the dominant conduction mechanism in the fabricated p–n heterojunction diode. The conduction and valence band discontinuities for NiO/ZnO heterostructure have been determined from the capacitance–voltage (C–V) measurements.

X- and gamma-ray N+PP+ silicon detectors with high radiation resistance

International Nuclear Information System (INIS)

Petris, M.; Ruscu, R.; Moraru, R.; Cimpoca, V.

1998-01-01

We have investigated the use of p-type silicon detectors as starting material for X-and gamma-ray detectors because of several potential benefits it would bring: 1. high purity p-type silicon grown by the float-zone process exhibits better radial dopant uniformity than n-type float-zone silicon; 2. it is free of radiation damage due to the neutron transmutation doping process and behaves better in a radiation field because mainly acceptor like centers are created through the exposure and the bulk material type inversion does not occur as in the n-type silicon. But the p-type silicon, in combination with a passivating layer of silicon dioxide, leads to a more complex detector layout since the positive charge in the oxide causes an inversion in the surface layer under the silicon dioxide. Consequently, it would be expected that N + P diodes have a higher leakage current than P + N ones. All these facts have been demonstrated experimentally. These features set stringent requirements for the technology of p-type silicon detectors. Our work presents two new geometries and an improved technology for p-type high resistivity material to obtain low noise radiation detectors. Test structures were characterized before and after the gamma exposure with a cumulative dose in the range 10 4 - 5 x 10 6 rad ( 60 Co). Results indicate that proposed structures and their technology enable the development of reliable N + PP + silicon detectors. For some samples (0.8 - 12 mm 2 ), extremely low reverse currents were obtained and, in combination with a low noise charge preamplifier, the splitting of 241 Am X-ray lines was possible and also the Mn Kα line (5.9 keV) was extracted from the noise with a 1.9 keV FWHM at the room temperature. An experimental model of a nuclear probe based on these diodes was designed for X-ray detection applications. (authors)

P-spray implant optimization for the fabrication of n-in-p microstrip detectors

International Nuclear Information System (INIS)

Fleta, Celeste; Lozano, Manuel; Pellegrini, Giulio; Campabadal, Francesca; Rafi, Joan Marc; Ullan, Miguel

2007-01-01

This work reports on an optimization study of the p-spray profile for the fabrication of n-in-p microstrip silicon detectors. A thorough simulation process of the expected electrical performance of different p-spray technologies was carried out. The best technological options for the p-spray implantation were chosen for the fabrication of miniature n-in-p microstrip detectors on high resistivity FZ wafers at the IMB-CNM clean room. The main conclusions derived from the simulations, and the electrical performance of a sample of the fabricated devices is presented

Flexible substrate compatible solution processed P-N heterojunction diodes with indium-gallium-zinc oxide and copper oxide

Energy Technology Data Exchange (ETDEWEB)

Choudhary, Ishan; Deepak, E-mail: saboo@iitk.ac.in

2017-04-15

Highlights: • Both n and p-type semiconductors are solution processed. • Temperature compatibility with flexible substrates such as polyimide. • Compatibility of p-type film (CuO) on n-type film (IZO). • Diode with rectification ratio of 10{sup 4} and operating voltage <1.5 V. • Construction of band alignment using XPS. - Abstract: Printed electronics on flexible substrates requires low temperature and solution processed active inks. With n-type indium-gallium-zinc oxide (IGZO) based electronics maturing for thin film transistor (TFT), we here demonstrate its heterojunction diode with p-copper oxide, prepared by sol-gel method and processed at temperatures compatible with polyimide substrates. The phase obtained for copper oxide is CuO. When coated on n-type oxide, it is prone to develop morphological features, which are minimized by annealing treatment. Diodes of p-CuO films with IGZO are of poor quality due to its high resistivity while, conducting indium-zinc oxide (IZO) films yielded good diode with rectification ratio of 10{sup 4} and operating voltage <1.5 V. A detailed measurement at the interface by X-ray photoelectron spectroscopy and optical absorption ascertained the band alignment to be of staggered type. Consistently, the current in the diode is established to be due to electrons tunnelling from n-IZO to p-CuO.

CdS-based p-i-n diodes using indium and copper doped CdS films by pulsed laser deposition

International Nuclear Information System (INIS)

Hernandez-Como, N; Berrellez-Reyes, F; Mizquez-Corona, R; Ramirez-Esquivel, O; Mejia, I; Quevedo-Lopez, M

2015-01-01

In this work we report a method to dope cadmium sulfide (CdS) thin films using pulsed laser deposition. Doping is achieved during film growth at substrate temperatures of 100 °C by sequential deposition of the CdS and the dopant material. Indium sulfide and copper disulfide targets were used as the dopant sources for n-type and p-type doping, respectively. Film resistivities as low as 0.2 and 1 Ω cm were achieved for indium and copper doped films, respectively. Hall effect measurements demonstrated the change in conductivity type from n-type to p-type when the copper dopants are incorporated into the film. The controlled incorporation of indium or copper, in the undoped CdS film, results in substitutional defects in the CdS, which increases the electron and hole concentration up to 4 × 10 18 cm −3 and 3 × 10 20 cm −3 , respectively. The results observed with CdS doping can be expanded to other chalcogenides material compounds by just selecting different targets. With the optimized doped films, CdS-based p-i-n diodes were fabricated yielding an ideality factor of 4, a saturation current density of 2 × 10 −6 A cm −2 and a rectification ratio of three orders of magnitude at ±3 V. (paper)

Suppression of irradiation effects in gold-doped silicon detectors

International Nuclear Information System (INIS)

McPherson, M.; Sloan, T.; Jones, B.K.

1997-01-01

Two sets of silicon detectors were irradiated with 1 MeV neutrons to different fluences and then characterized. The first batch were ordinary p-i-n photodiodes fabricated from high-resistivity (400 Ω cm) silicon, while the second batch were gold-doped powder diodes fabricated from silicon material initially of low resistivity (20 Ω cm). The increase in reverse leakage current after irradiation was found to be more in the former case than in the latter. The fluence dependence of the capacitance was much more pronounced in the p-i-n diodes than in the gold-doped diodes. Furthermore, photo current generation by optical means was less in the gold doped devices. All these results suggest that gold doping in silicon somewhat suppresses the effects of neutron irradiation. (author)

Responses of diode detectors to radiation beams from teletherapy machines

International Nuclear Information System (INIS)

Malinda, Lora; Nasukha

2003-01-01

Responses of diode detectors to radiation beams from teletherapy machines. It has been carried out responses to two sets of diode detector by using the beams of teletherapy Co-60 and medical linear accelerator. Each set of consist of 8 diode detectors was irradiated by using gamma beams from teletherapy Co-60 machines and 6 MV and 10 MV foron beams from medical linear accelerator and 6.9.12.16. and 20 MeV electron beams from medical linear accelerator. The detectors were positioned on the phantom circularly and radially and electronic equilibrium condition for all type and energy beams. It was found that every detectors had own individual response and it is not to be uniformity, since the fluctuation in between 16.6 % to 30.9 %. All detectors responses are linear to gamma and foron beams, and also for energy above 6 MeV for electron beams. Nonlinearity response occurs for 6 MeV electron beam, it is probably from the assumption of electronic equilibrium

Determination of the k{sub Q{sub c{sub l{sub i{sub n,Q{sub m{sub s{sub r}{sup f{sub c}{sub l}{sub i}{sub n},f{sub m}{sub s}{sub r}}}}}}}}} correction factors for detectors used with an 800 MU/min CyberKnife{sup ®} system equipped with fixed collimators and a study of detector response to small photon beams using a Monte Carlo method

Energy Technology Data Exchange (ETDEWEB)

Moignier, C., E-mail: cyril.moignier@free.fr; Huet, C. [Institut de Radioprotection et de Sûreté Nucléaire (IRSN), Service de Dosimétrie Externe, 92260, Fontenay-aux-Roses (France); Makovicka, L. [IRMA/CE UMR 6249 CNRS, Université de Franche-Comté, 25200, Montbéliard (France)

2014-07-15

Purpose: In a previous work, output ratio (OR{sub det}) measurements were performed for the 800 MU/min CyberKnife{sup ®} at the Oscar Lambret Center (COL, France) using several commercially available detectors as well as using two passive dosimeters (EBT2 radiochromic film and micro-LiF TLD-700). The primary aim of the present work was to determine by Monte Carlo calculations the output factor in water (OF{sub MC,w}) and the k{sub Q{sub c{sub l{sub i{sub n,Q{sub m{sub s{sub r}{sup f{sub c}{sub l}{sub i}{sub n},f{sub m}{sub s}{sub r}}}}}}}}} correction factors. The secondary aim was to study the detector response in small beams using Monte Carlo simulation. Methods: The LINAC head of the CyberKnife{sup ®} was modeled using the PENELOPE Monte Carlo code system. The primary electron beam was modeled using a monoenergetic source with a radial gaussian distribution. The model was adjusted by comparisons between calculated and measured lateral profiles and tissue-phantom ratios obtained with the largest field. In addition, the PTW 60016 and 60017 diodes, PTW 60003 diamond, and micro-LiF were modeled. Output ratios with modeled detectors (OR{sub MC,det}) and OF{sub MC,w} were calculated and compared to measurements, in order to validate the model for smallest fields and to calculate k{sub Q{sub c{sub l{sub i{sub n,Q{sub m{sub s{sub r}{sup f{sub c}{sub l}{sub i}{sub n},f{sub m}{sub s}{sub r}}}}}}}}} correction factors, respectively. For the study of the influence of detector characteristics on their response in small beams; first, the impact of the atomic composition and the mass density of silicon, LiF, and diamond materials were investigated; second, the material, the volume averaging, and the coating effects of detecting material on the detector responses were estimated. Finally, the influence of the size of silicon chip on diode response was investigated. Results: Looking at measurement ratios (uncorrected output factors) compared to the OF{sub MC,w}, the PTW 60016

ATLAS irradiation studies of n-in-n and p-in-n silicon microstrip detectors

CERN Document Server

Allport, P P; Buttar, C M; Carter, J; Drage, L M; Ferrère, D; Morgan, D; Riedler, P; Robinson, D

1999-01-01

Prior to the module production of the ATLAS silicon microstrip tracker for the barrel and the forward wheels, the characterisation of full-size prototype silicon detectors after radiation to fluences corresponding to 10 years of ATLAS operation is required. The behaviour of p-in-n and n-in-n detectors produced by several manufacturers before and after irradiation to a fluence of 3*10/sup 14/ protons/cm/sup 2/ at the CERN PS facility is discussed. This article summarises some recent results from the ATLAS SCT collaboration. The measurements of leakage current, full depletion voltage, signal-to-noise ratio and charge collection efficiency are presented. Despite the better efficiency performance of n-in-n detectors below depletion, the collaboration chose the p-in-n technology due to its simpler and less costly production since good charge collection efficiencies were achieved at the desired maximum bias voltage. (14 refs).

Spectral perturbations from silicon diode detector encapsulation and shielding in photon fields.

Science.gov (United States)

Eklund, Karin; Ahnesjö, Anders

2010-11-01

Silicon diodes are widely used as detectors for relative dose measurements in radiotherapy. The common manufacturing practice is to encapsulate the diodes in plastic for protection and to facilitate mounting in scanning devices. Diodes intended for use in photon fields commonly also have a shield of a high atomic number material (usually tungsten) integrated into the encapsulation to selectively absorb low-energy photons to which silicon diodes would otherwise over-response. However, new response models based on cavity theories and spectra calculations have been proposed for direct correction of the readout from unshielded (e.g., "electron") diodes used in photon fields. This raises the question whether it is correct to assume that the spectrum in a water phantom at the location of the detector cavity is not perturbed by the detector encapsulation materials. The aim of this work is to investigate the spectral effects of typical encapsulations, including shielding, used for clinical diodes. The effects of detector encapsulation of an unshielded and a shielded commercial diode on the spectra at the detector cavity location are studied through Monte Carlo simulations with PENELOPE-2005. Variance reduction based on correlated sampling is applied to reduce the CPU time needed for the simulations. The use of correlated sampling is found to be efficient and to not introduce any significant bias to the results. Compared to reference spectra calculated in water, the encapsulation for an unshielded diode is demonstrated to not perturb the spectrum, while a tungsten shielded diode caused not only the desired decrease in low-energy scattered photons but also a large increase of the primary electron fluence. Measurements with a shielded diode in a 6 MV photon beam proved that the shielding does not completely remove the field-size dependence of the detector response caused by the over-response from low-energy photons. Response factors of a properly corrected unshielded diode

Solid State pH Sensor Based on Light Emitting Diodes (LED As Detector Platform

Directory of Open Access Journals (Sweden)

Dermot Diamond

2006-08-01

Full Text Available A low-power, high sensitivity, very low-cost light emitting diode (LED-baseddevice developed for low-cost sensor networks was modified with bromocresol greenmembrane to work as a solid-state pH sensor. In this approach, a reverse-biased LEDfunctioning as a photodiode is coupled with a second LED configured in conventionalemission mode. A simple timer circuit measures how long (in microsecond it takes for thephotocurrent generated on the detector LED to discharge its capacitance from logic 1 ( 5 Vto logic 0 ( 1.7 V. The entire instrument provides an inherently digital output of lightintensity measurements for a few cents. A light dependent resistor (LDR modified withsimilar sensor membrane was also used as a comparison method. Both the LED sensor andthe LDR sensor responded to various pH buffer solutions in a similar way to obtainsigmoidal curves expected of the dye. The pKa value obtained for the sensors was found toagree with the literature value.

Solid State pH Sensor Based on Light Emitting Diodes (LED) As Detector Platform

Science.gov (United States)

Lau, King Tong; Shepherd, R.; Diamond, Danny; Diamond, Dermot

2006-01-01

A low-power, high sensitivity, very low-cost light emitting diode (LED)-based device developed for low-cost sensor networks was modified with bromocresol green membrane to work as a solid-state pH sensor. In this approach, a reverse-biased LED functioning as a photodiode is coupled with a second LED configured in conventional emission mode. A simple timer circuit measures how long (in microsecond) it takes for the photocurrent generated on the detector LED to discharge its capacitance from logic 1 (+5 V) to logic 0 (+1.7 V). The entire instrument provides an inherently digital output of light intensity measurements for a few cents. A light dependent resistor (LDR) modified with similar sensor membrane was also used as a comparison method. Both the LED sensor and the LDR sensor responded to various pH buffer solutions in a similar way to obtain sigmoidal curves expected of the dye. The pKa value obtained for the sensors was found to agree with the literature value.

Detection and dosimetry studies on the response of silicon diodes to an 241Am-Be source

International Nuclear Information System (INIS)

Lotfi, Y; Dizaji, H Zaki; Davani, F Abbasi

2014-01-01

Silicon diode detectors show potential for the development of an active personal dosimeter for neutron and photon radiation. Photons interact with the constituents of the diode detector and produce electrons. Fast neutrons interact with the constituents of the diode detector and converter, producing recoil nuclei and causing (n,α) and (n,p) reactions. These photon- and neutron-induced charged particles contribute to the response of diode detectors. In this work, a silicon pin diode was used as a detector to produce pulses created by photon and neutron. A polyethylene fast neutron converter was used as a recoil proton source in front of the detector. The total registered photon and neutron efficiency and the partial contributions of the efficiency, due to interactions with the diode and converter, were calculated. The results show that the efficiency of the converter-diode is a function of the incident photon and neutron energy. The optimized thicknesses of the converter for neutron detection and neutron dosimetry were found to be 1 mm and 0.1 mm respectively. The neutron records caused by the (n,α) and (n,p) reactions were negligible. The photon records were strongly dependent upon the energy and the depletion layer of the diode. The photons and neutrons efficiency of the diode-based dosimeter was calculated by the MCNPX code, and the results were in good agreement with experimental results for photons and neutrons from an 241 Am-Be source

P.I.X.S.C.A.N.: a micro-CT scanner for small animal based on hybrid pixel detectors; PIXSCAN: micro-tomodensitrometre a pixels hybrides pour le petit animal

Energy Technology Data Exchange (ETDEWEB)

Khoury, R

2008-03-15

Since more than a dozen years, efforts were led in the field of X-ray tomography for small animals, principally for the improvement of spatial resolution and the diminution of the absorbed dose. The C.P.P.M. developed the micro-CT P.I.X.S.C.A.N. based on the hybrid pixel detector X.P.A.D.2. In this context, my thesis work consists in studying the demonstrator P.I.X.S.C.A.N./X.P.A.D.2 and the contribution of the hybrid pixels in the imaging of small animals. A fast analytical simulation, FastSimu, was developed. An extrapolation of the performance of the demonstrator P.I.X.S.C.A.N, as well as the validation of the results obtained with the measured data, were led by means of the analytical simulator FastSimu. The demonstrator P.I.X.S.C.A.N./X.P.A.D.2 allowed to obtain reconstructed images with a rather good quality for a relatively weak absorbed dose. Its spatial resolution is degraded by the high number of defective pixels of the detector X.P.A.D.2. Beyond this study, a new version of the demonstrator P.I.X.S.C.A.N./X.P.A.D.2 is under construction. This latter, characterized by two and a half times smaller pixels and about no defective pixels will bring a considerable improvement on spatial resolution. (author)

Correlation between dislocations and leakage current of p-n diodes on a free-standing GaN substrate

Science.gov (United States)

Usami, Shigeyoshi; Ando, Yuto; Tanaka, Atsushi; Nagamatsu, Kentaro; Deki, Manato; Kushimoto, Maki; Nitta, Shugo; Honda, Yoshio; Amano, Hiroshi; Sugawara, Yoshihiro; Yao, Yong-Zhao; Ishikawa, Yukari

2018-04-01

Dislocations that cause a reverse leakage current in vertical p-n diodes on a GaN free-standing substrate were investigated. Under a high reverse bias, dot-like leakage spots were observed using an emission microscope. Subsequent cathodoluminescence (CL) observations revealed that the leakage spots coincided with part of the CL dark spots, indicating that some types of dislocation cause reverse leakage. When etch pits were formed on the dislocations by KOH etching, three sizes of etch pits were obtained (large, medium, and small). Among these etch pits, only the medium pits coincided with leakage spots. Additionally, transmission electron microscopy observations revealed that pure screw dislocations are present under the leakage spots. The results revealed that 1c pure screw dislocations are related to the reverse leakage in vertical p-n diodes.

Slanted n-ZnO/p-GaN nanorod arrays light-emitting diodes grown by oblique-angle deposition

Directory of Open Access Journals (Sweden)

Ya-Ju Lee

2014-05-01

Full Text Available High-efficient ZnO-based nanorod array light-emitting diodes (LEDs were grown by an oblique-angle deposition scheme. Due to the shadowing effect, the inclined ZnO vapor-flow was selectively deposited on the tip surfaces of pre-fabricated p-GaN nanorod arrays, resulting in the formation of nanosized heterojunctions. The LED architecture composed of the slanted n-ZnO film on p-GaN nanorod arrays exhibits a well-behaving current rectification of junction diode with low turn-on voltage of 4.7 V, and stably emits bluish-white luminescence with dominant peak of 390 nm under the operation of forward injection currents. In general, as the device fabrication does not involve passivation of using a polymer or sophisticated material growth techniques, the revealed scheme might be readily applied on other kinds of nanoscale optoelectronic devices.

Isoelectronic Ln doping in p-GaN and its effects on InGaN light-emitting diodes

International Nuclear Information System (INIS)

Kim, C. S.; Cheong, H. S.; Kang, D. S.; Kim, J. Y.; Hong, C. H.; Suh, E. K.; Lee, H. J.; Cho, H. K.; Adesida, I.

2004-01-01

The effects of isoelectronic In doping in a Mg-doped p-GaN layer on device performance of InGaN light-emitting diodes (LED) were investigated. It was found that there was a decrease of Hall resistivity and contact resistivity in p-GaN with In doping, compared to typical Mg-doped p-GaN. Isoelectronic In doping in p-GaN seems to cause a kind of surfactant effect and/or purification effect similar to the In-doped GaN case, which exhibits a decrease of non-radiative recombination centers and an enhancement of carrier concentration. Light output power and operating voltage were improved by applying an In-doped p-GaN contact layer to the LED.

UV photo-detector based on p-NiO thin film/n-ZnO nanorods heterojunction prepared by a simple process

International Nuclear Information System (INIS)

Echresh, Ahmad; Chey, Chan Oeurn; Zargar Shoushtari, Morteza; Khranovskyy, Volodymyr; Nur, Omer; Willander, Magnus

2015-01-01

Highlights: • The p-NiO/n-ZnO heterojunction showed an obvious rectifying behavior and the response of the diode was excellent in generating photocurrent upon UV illumination. • Diode electrical performance presented here were superior to those achieved from similar heterojunction prepared by different methods. • The XPS results show that the heterojunction has a type-II band alignment with a valence band offset of 1.50 eV and conduction band offset of 1.83 eV. - Abstract: A UV photo-detector based on p-NiO thin film/n-ZnO nanorods heterojunction was fabricated using a simple two-step fabrication process. The aqueous chemical hydrothermal and thermal evaporation methods were combined to grow the ZnO nanorods and the NiO thin film, respectively. Structural investigation indicated that well aligned ZnO nanorods with hexagonal face having a preferential orientation along the c-axis (0 0 2) have been achieved and that the NiO thin film is covering all the ZnO nanorods. X-ray photoelectron spectroscopy (XPS) was used to investigate the band alignment of the heterojunction and the valence and the conduction band offsets were determined to be 1.50 eV and 1.83 eV, respectively. The current–voltage characteristics of the p-NiO thin film/ZnO nanorods heterojunction showed a clear rectifying behavior under both dark and UV illumination conditions. The response of the heterojunction diode was excellent regarding the photocurrent generation. Although other similar heterojunction diodes demonstrated lower threshold voltage, the rectification ratio and the sensitivity of the fabricated diode were superior in comparison to other similar heterojunctions reported recently, implying the vitality of the presented two-step process

Correction of measured Gamma-Knife output factors for angular dependence of diode detectors and PinPoint ionization chamber.

Science.gov (United States)

Hršak, Hrvoje; Majer, Marija; Grego, Timor; Bibić, Juraj; Heinrich, Zdravko

2014-12-01

Dosimetry for Gamma-Knife requires detectors with high spatial resolution and minimal angular dependence of response. Angular dependence and end effect time for p-type silicon detectors (PTW Diode P and Diode E) and PTW PinPoint ionization chamber were measured with Gamma-Knife beams. Weighted angular dependence correction factors were calculated for each detector. The Gamma-Knife output factors were corrected for angular dependence and end effect time. For Gamma-Knife beams angle range of 84°-54°. Diode P shows considerable angular dependence of 9% and 8% for the 18 mm and 14, 8, 4 mm collimator, respectively. For Diode E this dependence is about 4% for all collimators. PinPoint ionization chamber shows angular dependence of less than 3% for 18, 14 and 8 mm helmet and 10% for 4 mm collimator due to volumetric averaging effect in a small photon beam. Corrected output factors for 14 mm helmet are in very good agreement (within ±0.3%) with published data and values recommended by vendor (Elekta AB, Stockholm, Sweden). For the 8 mm collimator diodes are still in good agreement with recommended values (within ±0.6%), while PinPoint gives 3% less value. For the 4 mm helmet Diodes P and E show over-response of 2.8% and 1.8%, respectively. For PinPoint chamber output factor of 4 mm collimator is 25% lower than Elekta value which is generally not consequence of angular dependence, but of volumetric averaging effect and lack of lateral electronic equilibrium. Diodes P and E represent good choice for Gamma-Knife dosimetry. Copyright © 2014 Associazione Italiana di Fisica Medica. Published by Elsevier Ltd. All rights reserved.

Electrical parameters of metal doped n-CdO/p-Si heterojunction diodes

Energy Technology Data Exchange (ETDEWEB)

Umadevi, P. [Department of Physics, Sri Vidya College of Engineering & Technology, Virudhunagar 626005, Tamilnadu (India); Prithivikumaran, N., E-mail: janavi_p@yahoo.com [Nanoscience Research Lab, Department of Physics, VHNSN College, Virudhunagar 626001, Tamilnadu (India)

2016-11-15

The CdO, Al doped CdO and Cu doped CdO thin films were coated on p-type silicon substrates by sol–gel spin coating method. The structural, surface morphological and electrical properties of undoped, Al and Cu doped CdO films on silicon substrate were studied. The Ag/CdO/p-Si, Ag/Al: CdO/p-Si and Ag/Cu: CdO/p-Si heterojunction diodes were fabricated and the diode parameters such as reverse saturation current, barrier height and ideality factor of the diodes were investigated by current–voltage (I–V)characteristics. The reverse current of the diode was found to increase strongly with the doping. The values of barrier height and ideality factor were decreased by doping with aluminium and copper. Photo response of the heterojunction diodes was studied and it was found that, the heterojunction diode constructed with the doped CdO has larger Photo response than the undoped heterojunction diode.

Analysis of the auger recombination rate in P+N-n-N-N HgCdTe detectors for HOT applications

Science.gov (United States)

Schuster, J.; Tennant, W. E.; Bellotti, E.; Wijewarnasuriya, P. S.

2016-05-01

Infrared (IR) photon detectors must be cryogenically cooled to provide the highest possible performance, usually to temperatures at or below ~ 150K. Such low operating temperatures (Top) impose very stringent requirements on cryogenic coolers. As such, there is a constant push in the industry to engineer new detector architectures that operate at higher temperatures, so called higher operating temperature (HOT) detectors. The ultimate goal for HOT detectors is room temperature operation. While this is not currently possibly for photon detectors, significant increases in Top are nonetheless beneficial in terms of reduced size, weight, power and cost (SWAP-C). The most common HgCdTe IR detector architecture is the P+n heterostructure photodiode (where a capital letter indicates a wide band gap relative to the active layer or "AL"). A variant of this architecture, the P+N-n-N-N heterostructure photodiode, should have a near identical photo-response to the P+n heterostructure, but with significantly lower dark diffusion current. The P+N-n-N-N heterostructure utilizes a very low doped AL, surrounded on both sides by wide-gap layers. The low doping in the AL, allows the AL to be fully depleted, which drastically reduces the Auger recombination rate in that layer. Minimizing the Auger recombination rate reduces the intrinsic dark diffusion current, thereby increasing Top. Note when we use the term "recombination rate" for photodiodes, we are actually referring to the net generation and recombination of minority carriers (and corresponding dark currents) by the Auger process. For these benefits to be realized, these devices must be intrinsically limited and well passivated. The focus of this proceeding is on studying the fundamental physics of the intrinsic dark currents in ideal P+N-n-N-N heterostructures, namely Auger recombination. Due to the complexity of these devices, specifically the presence of multiple heterojunctions, numerical device modeling techniques must be

Characterization of 3D-DDTC detectors on p-type substrates

CERN Document Server

Betta, G -F Dalla; Bosisio, Luciano; Darbo, Giovanni; Gabos, Paolo; Gemme, Claudia; Koehler, Michael; La Rosa, Alessandro; Parzefall, Ulrich; Pernegger, Heinz; Piemonte, Claudio; Povoli, Marco; Rachevskaia, Irina; Ronchin, Sabina; Wiik, Liv; Zoboli, Aanrea; Zorzi, Nicola

2009-01-01

We report on the electrical and functional characterization of 3D Double-side, Double-Type-Column (3D- DDTC) detectors fabricated on p-type substrates. Results relevant to detectors in the diode, strip and pixel configurations are presented, and demonstrate a clear improvement in the charge collection performance compared to the first prototypes of these detectors.

Effects of interface modification by H2O2 treatment on the electrical properties of n-type ZnO/p-type Si diodes

International Nuclear Information System (INIS)

He, Guan-Ru; Lin, Yow-Jon; Chang, Hsing-Cheng; Chen, Ya-Hui

2012-01-01

The fabrication and detailed electrical properties of heterojunction diodes based on n-type ZnO and p-type Si were reported. The effect of interface modification by H 2 O 2 treatment on the electrical properties of n-type ZnO/p-type Si diodes was investigated. The n-type ZnO/p-type Si diode without H 2 O 2 treatment showed a poor rectifying behavior with an ideality factor (n) of 2.5 and high leakage, indicating that the interfacial ZnSi x O y layer influenced the electronic conduction through the device. However, the n-type ZnO/p-type Si diode with H 2 O 2 treatment showed a good rectifying behavior with n of 1.3 and low leakage. This is because the thin SiO x layer acts as a thermodynamically stable buffer layer to suppress interfacial reaction between ZnO and Si. In addition, the enhanced photo-responsivity can be interpreted by the device rectifying performance and interface passivation. - Highlights: ► The electrical properties of n-ZnO/p-Si heterojunction diodes were researched. ► The n-ZnO/p-Si diode without H 2 O 2 treatment showed a poor rectifying behavior. ► The n-ZnO/H 2 O 2 -treated p-Si diode showed a good rectifying behavior. ► The enhanced responsivity can be interpreted by the device rectifying performance.

In situ growth of p and n-type graphene thin films and diodes by pulsed laser deposition

KAUST Repository

Sarath Kumar, S. R.

2013-11-07

We report the in situ growth of p and n-type graphene thin films by ultraviolet pulsed laser deposition in the presence of argon and nitrogen, respectively. Electron microscopy and Raman studies confirmed the growth, while temperature dependent electrical conductivity and Seebeck coefficient studies confirmed the polarity type of graphene films. Nitrogen doping at different sites of the honeycomb structure, responsible for n-type conduction, is identified using X-ray photoelectron spectroscopy, for films grown in nitrogen. A diode-like rectifying behavior is exhibited by p-n junction diodes fabricated using the graphene films.

Integrated Amorphous Silicon p-i-n Temperature Sensor for CMOS Photonics

Directory of Open Access Journals (Sweden)

Sandro Rao

2016-01-01

Full Text Available Hydrogenated amorphous silicon (a-Si:H shows interesting optoelectronic and technological properties that make it suitable for the fabrication of passive and active micro-photonic devices, compatible moreover with standard microelectronic devices on a microchip. A temperature sensor based on a hydrogenated amorphous silicon p-i-n diode integrated in an optical waveguide for silicon photonics applications is presented here. The linear dependence of the voltage drop across the forward-biased diode on temperature, in a range from 30 °C up to 170 °C, has been used for thermal sensing. A high sensitivity of 11.9 mV/°C in the bias current range of 34–40 nA has been measured. The proposed device is particularly suitable for the continuous temperature monitoring of CMOS-compatible photonic integrated circuits, where the behavior of the on-chip active and passive devices are strongly dependent on their operating temperature.

Pin Diode Detector For Radiation Field Monitoring In A Current Mode

International Nuclear Information System (INIS)

Beck, A.; Wengrowicz, U.; Kadmon, Y.; Tirosh, D.; Osovizky, A.; Vulasky, E.; Tal, N.

1999-01-01

Thus paper presents calculations and tests made for a detector based on a bare Pin diode and a Pin diode coupled to a plastic scintillator. These configurations have a variety of applications in radiation field monitoring. For example, the Positron Emission Tomography (PET) technology which becomes an established diagnostic imaging modality. Flour-18 is one of the major isotopes being used by PET imaging. The PET method utilizes short half life β + radioisotopes which, by annihilation, produce a pair of high energy photons (511 keV). Fluoro-deoxyglucose producers are required to meet federal regulations and licensing requirements. Some of the regulations are related to the production in chemistry modules regarding measuring the Start Of Synthesis (SOS) activity and verifying the process repeatability. Locating a radiation detector based on Pin diode inside the chemistry modules is suitable for this purpose. The dimensions of a Pin diode based detector can be small, with expected linearity over several scale decades

The electrical properties of n-ZnO/p-SnO heterojunction diodes

Science.gov (United States)

Javaid, K.; Xie, Y. F.; Luo, H.; Wang, M.; Zhang, H. L.; Gao, J. H.; Zhuge, F.; Liang, L. Y.; Cao, H. T.

2016-09-01

In the present work, n-type zinc oxide (ZnO) and p-type tin monoxide (SnO) based heterostructure diodes were fabricated on an indium-tin-oxide glass using the radio frequency magnetron sputtering technique. The prepared ZnO/SnO diodes exhibited a typical rectifying behavior, with a forward to reverse current ratio about 500 ± 5 at 2 V and turn on voltage around 1.6 V. The built-in voltage of the diode was extracted to be 0.5 V based on the capacitance-voltage (C-V) measurement. The valence and conduction band offsets were deliberated through the band energy diagram of ZnO/SnO heterojunction, as 1.08 eV and 0.41 eV, respectively. The potential barrier-dependent carrier transportation mechanism across the space charge region was also investigated.

Enhanced Output Power of Near-Ultraviolet Light-Emitting Diodes by p-GaN Micro-Rods

Science.gov (United States)

Wang, Dong-Sheng; Zhang, Ke-Xiong; Liang, Hong-Wei; Song, Shi-Wei; Yang, De-Chao; Shen, Ren-Sheng; Liu, Yang; Xia, Xiao-Chuan; Luo, Ying-Min; Du, Guo-Tong

2014-02-01

Near-ultraviolet (UV) InGaN/AlGaN light-emitting diodes (LEDs) are grown by low-pressure metal-organic chemical vapor deposition. The scanning electronic microscope image shows that the p-GaN micro-rods are formed above the interface of p-AlGaN/p-GaN due to the rapid growth rate of p-GaN in the vertical direction. The p-GaN micro-rods greatly increase the escape probability of photons inside the LED structure. Electroluminescence intensities of the 372 nm UV LED lamps with p-GaN micro rods are 88% higher than those of the flat surface LED samples.

Stability issues of high-energy resolution diode type CdTe nuclear radiation detectors in a long-term operation

CERN Document Server

Niraula, M; Aoki, T; Tomita, Y; Hatanaka, Y

2002-01-01

High-energy resolution diode type CdTe detectors were fabricated by growing an n-type epitaxial layer on high resistivity p-like crystal wafers, and their stability issues during a long-term operation were studied. Room temperature stability of the detectors was not good at low operating biases of around 200 V. However, it could be improved significantly by operating them at higher biases under full depletion conditions. On the other hand, detectors exhibited excellent stability by cooling them slightly below room temperature down to 0 deg. C. The effect of this low level of cooling on detector stability was found to be more significant than that of applying high biases at room temperature. By using the detector type presented here, stable operation could be obtained at moderate operating voltages of around 400 V and with a modest degree of cooling.

Study of araldite in edge protection of n-type and p-type surface barrier detectors

International Nuclear Information System (INIS)

Alencar, M.A.V.; Jesus, E.F.O.; Lopes, R.T.

1995-01-01

The aim of this work is the realization of a comparative study between the surface barrier detectors performance n and type using the epoxy resin Araldite as edge protection material with the purpose of determining which type of detector (n or p) the use of Araldite is more indicated. The surface barrier detectors were constructed using n and p type silicon wafer with resistivity of 3350Ω.cm and 5850 Ω.cm respectively. In the n type detectors, the metals used as ohmic and rectifier contacts were the Al and Au respectively, while in the p type detectors, the ohmic and rectifier contacts were Au and Al. All metallic contacts were done by evaporation in high vacuum (∼10 -4 Torr) and with deposit of 40 μm/cm 2 . The obtained results for the detectors (reverse current of -350nA and resolution from 21 to 26 keV for p type detectors and reserve current of 1μA and resolution from 44 to 49 keV for n type detectors) tend to demonstrate that use of epoxy resin Araldite in the edge protection is more indicated to p type surface barrier detectors. (author). 3 refs., 4 figs., 1 tab

Performance of n-in-p pixel detectors irradiated at fluences up to $5x10^{15} n_{eq}/cm^{2}$ for the future ATLAS upgrades

CERN Document Server

INSPIRE-00219560; La Rosa, A.; Nisius, R.; Pernegger, H.; Richter, R.H.; Weigell, P.

We present the results of the characterization of novel n-in-p planar pixel detectors, designed for the future upgrades of the ATLAS pixel system. N-in-p silicon devices are a promising candidate to replace the n-in-n sensors thanks to their radiation hardness and cost effectiveness, that allow for enlarging the area instrumented with pixel detectors. The n-in-p modules presented here are composed of pixel sensors produced by CiS connected by bump-bonding to the ATLAS readout chip FE-I3. The characterization of these devices has been performed with the ATLAS pixel read-out systems, TurboDAQ and USBPIX, before and after irradiation with 25 MeV protons and neutrons up to a fluence of 5x10**15 neq /cm2. The charge collection measurements carried out with radioactive sources have proven the feasibility of employing this kind of detectors up to these particle fluences. The collected charge has been measured to be for any fluence in excess of twice the value of the FE-I3 threshold, tuned to 3200 e. The first result...

InGaAs/InP heteroepitaxial Schottky barrier diodes for terahertz applications

Science.gov (United States)

Bhapkar, Udayan V.; Li, Yongjun; Mattauch, Robert J.

1992-01-01

This paper explores the feasibility of planar, sub-harmonically pumped, anti-parallel InGaAs/InP heteroepitaxial Schottky diodes for terahertz applications. We present calculations of the (I-V) characteristics of such diodes using a numerical model that considers tunneling. We also present noise and conversion loss predictions of diode mixers operated at 500 GHz, and obtained from a multi-port mixer analysis, using the I-V characteristics predicted by our model. Our calculations indicate that InGaAs/InP heteroepitaxial Schottky barrier diodes are expected to have an I-V characteristic with an ideality factor comparable to that of GaAs Schottky diodes. However, the reverse saturation current of InGaAs/InP diodes is expected to be much greater than that of GaAs diodes. These predictions are confirmed by experiment. The mixer analyses predict that sub-harmonically pumped anti-parallel InGaAs/InP diode mixers are expected to offer a 2 dB greater conversion loss and a somewhat higher single sideband noise temperature than their GaAs counterparts. More importantly, the InGaAs/InP devices are predicted to require only one-tenth of the local oscillator power required by similar GaAs diodes.

Characterization of vertical GaN p-n diodes and junction field-effect transistors on bulk GaN down to cryogenic temperatures

Science.gov (United States)

Kizilyalli, I. C.; Aktas, O.

2015-12-01

There is great interest in wide-bandgap semiconductor devices and most recently in vertical GaN structures for power electronic applications such as power supplies, solar inverters and motor drives. In this paper the temperature-dependent electrical behavior of vertical GaN p-n diodes and vertical junction field-effect transistors fabricated on bulk GaN substrates of low defect density (104 to 106 cm-2) is described. Homoepitaxial MOCVD growth of GaN on its native substrate and the ability to control the doping in the drift layers in GaN have allowed the realization of vertical device architectures with drift layer thicknesses of 6 to 40 μm and net carrier electron concentrations as low as 1 × 1015 cm-3. This parameter range is suitable for applications requiring breakdown voltages of 1.2 kV to 5 kV. Mg, which is used as a p-type dopant in GaN, is a relatively deep acceptor (E A ≈ 0.18 eV) and susceptible to freeze-out at temperatures below 200 K. The loss of holes in p-GaN has a deleterious effect on p-n junction behavior, p-GaN contacts and channel control in junction field-effect transistors at temperatures below 200 K. Impact ionization-based avalanche breakdown (BV > 1200 V) in GaN p-n junctions is characterized between 77 K and 423 K for the first time. At higher temperatures the p-n junction breakdown voltage improves due to increased phonon scattering. A positive temperature coefficient in the breakdown voltage is demonstrated down to 77 K; however, the device breakdown characteristics are not as abrupt at temperatures below 200 K. On the other hand, contact resistance to p-GaN is reduced dramatically above room temperature, improving the overall device performance in GaN p-n diodes in all cases except where the n-type drift region resistance dominates the total forward resistance. In this case, the electron mobility can be deconvolved and is found to decrease with T -3/2, consistent with a phonon scattering model. Also, normally-on vertical junction

A monolithically integrated detector-preamplifier on high-resistivity silicon

International Nuclear Information System (INIS)

Holland, S.; Spieler, H.

1990-02-01

A monolithically integrated detector-preamplifier on high-resistivity silicon has been designed, fabricated and characterized. The detector is a fully depleted p-i-n diode and the preamplifier is implemented in a depletion-mode PMOS process which is compatible with detector processing. The amplifier is internally compensated and the measured gain-bandwidth product is 30 MHz with an input-referred noise of 15 nV/√Hz in the white noise regime. Measurements with an Am 241 radiation source yield an equivalent input noise charge of 800 electrons at 200 ns shaping time for a 1.4 mm 2 detector with on-chip amplifier in an experimental setup with substantial external pickup

Barrier height and interface effect of Pt-n-GaN and Pd-n-GaN Schottky diodes

International Nuclear Information System (INIS)

Khan, M.R.H.; Saha, S.L.; Sawaki, N.

1999-01-01

Schottky barriers on n-type GaN films by Pt and Pd are fabricated and characterized. A thin Pt or Pd layer is deposited on n-GaN layers to form Schottky contacts in a vacuum below 1x10/sup -6/ Torr. The area of all diodes is 3.46 x 10-4 cm/sup 2/. Several samples of Pt-n GaN and Pd-n GaN were studied. The ideality factor of Pt-n-GaN diode is 1.26 and of Pd-n-GaN is 1.17. The breakdown voltage of Pt-n-GaN and Pd-n-GaN diodes is 21 V and 26 V respectively. In both the cases the leakage current varies between 1x10-9 A and 5x 10-9 A. The Schottky barrier heights (phi/sub B/ ) of Pt-GaN diode is been determined to be 1.02 eV by current voltage (I-V) and 1.07 eV by capacitance (C-V) measurements Also, phi/sub B/ of Pd-GaN diode is determined to be 0.91 eV by I-V and 0.98 eV, by C-V measurements. The departure of the values of the ideality factor is considered to be due to spatial inhomogeneities at the meal semiconductor interface. The difference in the values of phi/sub B/ determined by I-V and C-V measurements is attributed to the deformation of the spatial barrier distribution. (author)

Junction depth dependence of breakdown in silicon detector diodes

International Nuclear Information System (INIS)

Beck, G.A.; Carter, A.A.; Carter, J.R.; Greenwood, N.M.; Lucas, A.D.; Munday, D.J.; Pritchard, T.W.; Robinson, D.; Wilburn, C.D.; Wyllie, K.

1996-01-01

The high voltage capability of detector diodes fabricated in the planar process is limited by the high field generated at the edge of the junction.We have fabricated diodes with increased junction depth with respect to our standard process and find a significantly higher breakdown voltage,in reasonable agreement with previous studies of junction breakdown. (orig.)

On the effect of N-GaN/P-GaN/N-GaN/P-GaN/N-GaN built-in junctions in the n-GaN layer for InGaN/GaN light-emitting diodes.

Science.gov (United States)

Kyaw, Zabu; Zhang, Zi-Hui; Liu, Wei; Tan, Swee Tiam; Ju, Zhen Gang; Zhang, Xue Liang; Ji, Yun; Hasanov, Namig; Zhu, Binbin; Lu, Shunpeng; Zhang, Yiping; Sun, Xiao Wei; Demir, Hilmi Volkan

2014-01-13

N-GaN/P-GaN/N-GaN/P-GaN/N-GaN (NPNPN-GaN) junctions embedded between the n-GaN region and multiple quantum wells (MQWs) are systematically studied both experimentally and theoretically to increase the performance of InGaN/GaN light emitting diodes (LEDs) in this work. In the proposed architecture, each thin P-GaN layer sandwiched in the NPNPN-GaN structure is completely depleted due to the built-in electric field in the NPNPN-GaN junctions, and the ionized acceptors in these P-GaN layers serve as the energy barriers for electrons from the n-GaN region, resulting in a reduced electron over flow and enhanced the current spreading horizontally in the n- GaN region. These lead to increased optical output power and external quantum efficiency (EQE) from the proposed device.

Solution-processed n-ZnO nanorod/p-Co_3O_4 nanoplate heterojunction light-emitting diode

International Nuclear Information System (INIS)

Kim, Jong-Woo; Lee, Su Jeong; Biswas, Pranab; Lee, Tae Il; Myoung, Jae-Min

2017-01-01

Highlights: • The n-ZnO nanorods were epitaxially grown on p-Co_3O_4 nanoplates. • The heteroepitaxial p-n junction was fabricated by using hydrothermal process. • The LEDs emitted reddish-orange and violet light related to ZnO point defects. • The Co_3O_4 nanoplates function as a hole injection layer. • Junction between 1D NRs and 2D NPs provides a new approach to design nanostructures. - Abstract: A heterojunction light-emitting diode (LED) based on p-type cobalt oxide (Co_3O_4) nanoplates (NPs)/n-type zinc oxide (ZnO) nanorods (NRs) is demonstrated. Using a low-temperature aqueous solution process, the n-type ZnO NRs were epitaxially grown on Co_3O_4 NPs which were two-dimensionally assembled by a modified Langmuir-Blodgett process. The heterojunction LEDs exhibited a typical rectifying behavior with a turn-on voltage of about 2 V and emitted not only reddish-orange light at 610 nm but also violet light at about 400 nm. From the comparative analyses of electroluminescence and photoluminescence, it was determined that the reddish-orange light emission was related to the electronic transitions from zinc interstitials (Zn_i) to oxygen interstitials (O_i) or conduction-band minimum (CBM) to oxygen vacancies (V_O), and the violet light emission was attribute to the transition from CBM to valence-band maximum (VBM) or Zn_i to zinc vacancies (V_Z_n).

Facile fabrication and electrical investigations of nanostructured p-Si/n-TiO2 hetero-junction diode

Science.gov (United States)

Kumar, Arvind; Mondal, Sandip; Rao, K. S. R. Koteswara

2018-05-01

In this work, we have fabricated the nanostructured p-Si/n-TiO2 hetero-junction diode by using a facile spin-coating method. The XRD analysis suggests the presence of well crystalline anatase TiO2 film on Si with small grain size (˜16 nm). We have drawn the band alignment using Anderson model to understand the electrical transport across the junction. The current-voltage (J-V) characteristics analysis reveals the good rectification ratio (103 at ± 3 V) and slightly higher ideality factor (4.7) of our device. The interface states are responsible for the large ideality factor as Si/TiO2 form a dissimilar interface and possess a large number of dangling bonds. The study reveals the promises to be used Si/TiO2 diode as an alternative to the traditional p-n homo-junction diode, which typically require high budget.

Damage coefficient and defect level of copper-contaminated silicon N+P diode

International Nuclear Information System (INIS)

Usami, A.; Kato, Y.

1975-01-01

The damage coefficient at 298 0 K of copper-contaminated N + P diodes is smaller than that of non-contaminated ones. In these copper-contaminated samples, the higher the bulk resistivity is, the smaller is the damage coefficient. For non-contaminated diodes, the damage coefficient of samples of pulled bulk crystals is smaller than that of floating zone crystals, and the higher bulk resistivity diodes have smaller damage coefficient. At 217 0 K measurement, the effect of copper-contamination on the damage coefficient could not be observed. The energy levels of defects introduced by gamma ray irradiation are approximately0.30 eV, and approximately0.28 eV with non-contaminated FZ 135 ohm-cm and CZ 10 ohm-cm bulk samples, respectively. In copper-contaminated samples, approximately0.60 eV and approximately0.45 eV are obtained as the defect energy levels for FZ 135 ohm-cm and CZ 10 ohm-cm bulk samples. (U.S.)

Black Phosphorus-Zinc Oxide Nanomaterial Heterojunction for p-n Diode and Junction Field-Effect Transistor.

Science.gov (United States)

Jeon, Pyo Jin; Lee, Young Tack; Lim, June Yeong; Kim, Jin Sung; Hwang, Do Kyung; Im, Seongil

2016-02-10

Black phosphorus (BP) nanosheet is two-dimensional (2D) semiconductor with distinct band gap and attracting recent attention from researches because it has some similarity to gapless 2D semiconductor graphene in the following two aspects: single element (P) for its composition and quite high mobilities depending on its fabrication conditions. Apart from several electronic applications reported with BP nanosheet, here we report for the first time BP nanosheet-ZnO nanowire 2D-1D heterojunction applications for p-n diodes and BP-gated junction field effect transistors (JFETs) with n-ZnO channel on glass. For these nanodevices, we take advantages of the mechanical flexibility of p-type conducting of BP and van der Waals junction interface between BP and ZnO. As a result, our BP-ZnO nanodimension p-n diode displays a high ON/OFF ratio of ∼10(4) in static rectification and shows kilohertz dynamic rectification as well while ZnO nanowire channel JFET operations are nicely demonstrated by BP gate switching in both electrostatics and kilohertz dynamics.

Ultraviolet electroluminescence from n-ZnO/p-NiO heterojunction light-emitting diode

International Nuclear Information System (INIS)

Deng, R.; Yao, B.; Li, Y.F.; Xu, Y.; Li, J.C.; Li, B.H.; Zhang, Z.Z.; Zhang, L.G.; Zhao, H.F.; Shen, D.Z.

2013-01-01

The n-ZnO/p-NiO heterojunction was prepared by depositing a p-type NiO film on a c-plane sapphire by rf magnetron sputtering and then growing a n-type ZnO film on the NiO film by plasma-assisted molecular beam epitaxy. The heterojunction shows a diode-like rectification characteristic with a turn-on voltage of ∼3.6 V and emits UV light upon putting a forward bias. The intensity of the UV emission increases as injection current increases from 0.5 to 3.5 mA, but the wavelength of the UV emission decreases from 404 to 387 nm. It is demonstrated that the UV emission comes from near band-edge radiative recombination of electron and hole in the ZnO layer. The mechanism of the UV electroluminescence is discussed in the present work. - Highlights: ► The n-ZnO/p-NiO heterojunction was prepared by rf magnetron sputtering. ► The heterojunction shows a diode-like rectification characteristic with a turn-on voltage of ∼3.6 V. ► The heterojunction realizes UV EL emission with wavelength of 387 nm at the injection current of 3.5 mA.

Fabrication and characterization of GaN-based light-emitting diodes without pre-activation of p-type GaN.

Science.gov (United States)

Hu, Xiao-Long; Wang, Hong; Zhang, Xi-Chun

2015-01-01

We fabricated GaN-based light-emitting diodes (LEDs) without pre-activation of p-type GaN. During the fabrication process, a 100-nm-thick indium tin oxide film was served as the p-type contact layer and annealed at 500°C in N2 ambient for 20 min to increase its transparency as well as to activate the p-type GaN. The electrical measurements showed that the LEDs were featured by a lower forward voltage and higher wall-plug efficiency in comparison with LEDs using pre-activation of p-type GaN. We discussed the mechanism of activation of p-type GaN at 500°C in N2 ambient. Furthermore, x-ray photoemission spectroscopy examinations were carried out to study the improved electrical performances of the LEDs without pre-activation of p-type GaN.

Scanning transient current study of the I-V stabilization phenomena in silicon detectors irradiated by fast neutrons

International Nuclear Information System (INIS)

Eremin, V.; Verbitskaya, E.; Sidorov, A.; Fretwurst, E.; Lindstrom, G.

1996-03-01

Investigation of the I-V stabilization phenomena in neutron irradiated silicon detectors has been carried out using scanning transient current technique (STCT) on non-irradiated PP + -p-n + detectors. The PP + -p-n + detectors were used to simulate the PP + -n-n + detectors irradiated beyond the space charge sign inversion (SCSI). Two mechanisms partially responsible for the I- V stabilization have been identified

Ge-semiconductor detectors with a p-implanted n+-contact

International Nuclear Information System (INIS)

Protic, D.; Riepe, G.

1979-01-01

P-implanted large-surface-detectors with improved properties can be produced by implantation of the n + -contact with relatively low dose and high energy. After an annealing process a nearly perfect lattice structure is obtained. By a subsequent p-implantation step with high dose and low energy, the surface restisivity can be reduced. The p + -contacts are obtained by B-implantation. (DG) [de

Characterisation of different hole transport materials as used in organic p-i-n solar cells

Energy Technology Data Exchange (ETDEWEB)

Pfuetzner, Steffen; Petrich, Annette; Koch, Maik; Riede, Moritz; Leo, Karl [Institut fuer Angewandte Photophysik, Technische Universitaet Dresden (Germany); Malbrich, Christine [Leibniz-Institut fuer Festkoerper- und Werkstoffforschung, Dresden (Germany); Hildebrandt, Dirk; Pfeiffer, Martin [Heliatek GmbH, Dresden (Germany)

2008-07-01

This work focuses on the replacement of hole transport material MeO-TPD, which has been used so far in organic p-i-n- solar cells despite its has unfavourable behaviour at elevated temperatures. For this reason, different characterisation and investigations of the hole transport materials PV-TPD, PV-TPDoM, Di-NPB and MeO-Spiro-TPD were done, i.e. dopability, hole mobility, absorption, reflection, cyclic voltametry and glass transition temperature were measured. With simplified structures, e.g. m-i-p diodes, and simplified solar cells, consisting of the blue absorbing fullerene C{sub 60} as acceptor and the transparent donor material 4P-TPD, further specific material properties were determined.

Amorphous silicon based radiation detectors

International Nuclear Information System (INIS)

Perez-Mendez, V.; Cho, G.; Drewery, J.; Jing, T.; Kaplan, S.N.; Qureshi, S.; Wildermuth, D.; Fujieda, I.; Street, R.A.

1991-07-01

We describe the characteristics of thin(1 μm) and thick (>30μm) hydrogenated amorphous silicon p-i-n diodes which are optimized for detecting and recording the spatial distribution of charged particles, x-rays and γ rays. For x-ray, γ ray, and charged particle detection we can use thin p-i-n photosensitive diode arrays coupled to evaporated layers of suitable scintillators. For direct detection of charged particles with high resistance to radiation damage, we use the thick p-i-n diode arrays. 13 refs., 7 figs

Mis-diode as a low-energy X- and γ-ray spectrometer

International Nuclear Information System (INIS)

Konova, A.

1980-01-01

Considered are main peculiarities of apparata called MIS-diods having metal-thin isolating semiconductor structure and used as detectors of low-energy gamma and X-ray radiation. Discussed are advantages of tunnel MIS-diods based on non-primitive carriers. Presented are results of experimental measurements carried out using system of metal-silion oxide-silicon with the oxide layer width of 10-25 A (silicon with acceptor concentration of 10 19 m -3 ). Data presented show that MIS-diods can be considered as diods with p-n - transition in which n + - region is an inversion layer near the semiconductor surface, and further a leant region is situated. When voltage is applied only the depth of the leant region changes. In case of high quality diods the leakage currents are very small. Results of the investigation performed show that MIS-diods with oxide film wiolth of 10-22 A (the film covering p-silicon with high specific resistance) can be used as spectrometers of low-energy photons having particularly high energetic solution at room temperature. An advantage of new diods is the reverse current significantly lower in comparison with that of usual detectors with the Schottky barrier

Forward Current Transport Mechanisms of Ni/Au—InAlN/AlN/GaN Schottky Diodes

Science.gov (United States)

Wang, Xiao-Feng; Shao, Zhen-Guang; Chen, Dun-Jun; Lu, Hai; Zhang, Rong; Zheng, You-Dou

2014-05-01

We fabricate two Ni/Au-In0.17Al0.83N/AlN/GaN Schottky diodes on substrates of sapphire and Si, respectively, and investigate their forward-bias current transport mechanisms by temperature-dependent current-voltage measurements. In the temperature range of 300-485 K, the Schottky barrier heights (SBHs) calculated by using the conventional thermionic-emission (TE) model are strongly positively dependent on temperature, which is in contrast to the negative-temperature-dependent characteristic of traditional semiconductor Schottky diodes. By fitting the forward-bias I-V characteristics using different current transport models, we find that the tunneling current model can describe generally the I-V behaviors in the entire measured range of temperature. Under the high forward bias, the traditional TE mechanism also gives a good fit to the measured I-V data, and the actual barrier heights calculated according to the fitting TE curve are 1.434 and 1.413 eV at 300K for InAlN/AlN/GaN Schottky diodes on Si and the sapphire substrate, respectively, and the barrier height shows a slightly negative temperature coefficient. In addition, a formula is given to estimate SBHs of Ni/Au—InAlN/AlN/GaN Schottky diodes taking the Fermi-level pinning effect into account.

Detector with internal gain for short-wave infrared ranging applications

Science.gov (United States)

Fathipour, Vala; Mohseni, Hooman

2017-09-01

Abstarct.Highly sensitive photon detectors are regarded as the key enabling elements in many applications. Due to the low photon energy at the short-wave infrared (SWIR), photon detection and imaging at this band are very challenging. As such, many efforts in photon detector research are directed toward improving the performance of the photon detectors operating in this wavelength range. To solve these problems, we have developed an electron-injection (EI) technique. The significance of this detection mechanism is that it can provide both high efficiency and high sensitivity at room temperature, a condition that is very difficult to achieve in conventional SWIR detectors. An EI detector offers an overall system-level sensitivity enhancement due to a feedback stabilized internal avalanche-free gain. Devices exhibit an excess noise of unity, operate in linear mode, require bias voltage of a few volts, and have a cutoff wavelength of 1700 nm. We review the material system, operating principle, and development of EI detectors. The shortcomings of the first-generation devices were addressed in the second-generation detectors. Measurement on second-generation devices showed a high-speed response of ˜6 ns rise time, low jitter of less than 20 ps, high amplification of more than 2000 (at optical power levels larger than a few nW), unity excess noise factor, and low leakage current (amplified dark current ˜10 nA at a bias voltage of -3 V and at room temperature. These characteristics make EI detectors a good candidate for high-resolution flash light detection and ranging (LiDAR) applications with millimeter scale depth resolution at longer ranges compared with conventional p-i-n diodes. Based on our experimentally measured device characteristics, we compare the performance of the EI detector with commercially available linear mode InGaAs avalanche photodiode (APD) as well as a p-i-n diode using a theoretical model. Flash LiDAR images obtained by our model show that the EI

Dual-wavelength electroluminescence from an n-ZnO/p-GaN heterojunction light emitting diode

International Nuclear Information System (INIS)

Tsai, Bor-Sheng; Chiu, Hung-Jen; Chen, Tai-Hong; Lai, Li-Wen; Ho, Chai-Cheng; Liu, Day-Shan

2015-01-01

Highlights: • The LEDs fabricated by 450 °C- and 700 °C-annealed n-ZnO/p-GaN heterojunction structures were investigated. • The structure annealed at 700 °C emitted yellowish light composed of the dual-wavelength radiations centered at 420 and 610 nm. • The long-wavelength radiation was attributed to emerge from the deep-level emission and the Ga–O interlayer emission. - Abstract: We investigated the electro-optical properties of light emitting diodes (LEDs) fabricated by using the n-ZnO/p-GaN heterojunction structures annealed at 450 °C and 700 °C, in vacuum ambient. A dominant near-UV emission at approximately 420 nm was observed from the LED fabricated by the 450 °C-annealed n-ZnO/p-GaN heterojunction structure, whereas that of the structure annealed at 700 °C emitted a yellowish light composed of the dual-wavelength emissions centered at 420 and 610 nm. The mechanism responsible for the broad long-wavelength radiation was ascribed to the transitions associated with both the deep-level emissions due to the activation of the native defects on the n-ZnO side surface and the formation of the Ga–O interlayer resulting from the in-diffusion of oxygen atoms to the p-GaN side surface of the n-ZnO/p-GaN interface.

An investigation of characteristics parameters of Ag/p-Si Schottky diodes based on I-V-T and C-V-T measurements

International Nuclear Information System (INIS)

Selcuk, A.B.

2004-01-01

The current-voltage (I-V) measurements on Ag/p-Si Schottky barrier diodes in the temperature range 125-300 K were carried out. The experimental values of n and Φ b 0 were determined from intercepts and slopes of the forward bias In I-V plot at each temperature. The Φ b 0 and n determined from semilog-forwaid I- V plots were found to be a strong function of temperature. The ideality factor n was found to increase, while the Φ b 0 decrease with decreasing temperature. The flat-band barrier height Φ b f and series resistance R s are also determined from the I-V measurements. Furthermore, the diffusion potential V D , experimental carrier doping density N A , Fermi level E F and barrier height Φ C V are determined from the C- V measurements. It is shown that the values of R s estimated from Cheung's method were strongly temperature dependent decreased with increasing temperature

Characterization of a SiC MIS Schottky diode as RBS particle detector

Science.gov (United States)

Kaufmann, I. R.; Pick, A. C.; Pereira, M. B.; Boudinov, H. I.

2018-02-01

A 4H-SiC Schottky diode was investigated as a particle detector for Rutherford Backscattering Spectroscopy (RBS) experiment. The device was fabricated on a commercial 4H-SiC epitaxial n-type layer grown onto a 4H-SiC n+ type substrate wafer doped with nitrogen. Hafnium oxide with thickness of 1 nm was deposited by Atomic Layer Deposition and 10 nm of Ni were deposited by sputtering to form the Ni/HfO2/4H-SiC MIS Schottky structure. Current-Voltage curves with variable temperature were measured to extract the real Schottky Barrier Height (0.32 V) and ideality factor values (1.15). Reverse current and Capacitance-Voltage measurements were performed on the 4H-SiC detector and compared to a commercial Si barrier detector acquired from ORTEC. RBS data for four alpha energies (1, 1.5, 2 and 2.5 MeV) were collected from an Au/Si sample using the fabricated SiC and the commercial Si detectors simultaneously. The energy resolution for the fabricated detector was estimated to be between 75 and 80 keV.

Photo-Detectors Integrated with Resonant Tunneling Diodes

Directory of Open Access Journals (Sweden)

José M. L. Figueiredo

2013-07-01

Full Text Available We report on photo-detectors consisting of an optical waveguide that incorporates a resonant tunneling diode (RTD. Operating at wavelengths around 1.55 μm in the optical communications C band we achieve maximum sensitivities of around 0.29 A/W which is dependent on the bias voltage. This is due to the nature of RTD nonlinear current-voltage characteristic that has a negative differential resistance (NDR region. The resonant tunneling diode photo-detector (RTD-PD can be operated in either non-oscillating or oscillating regimes depending on the bias voltage quiescent point. The oscillating regime is apparent when the RTD-PD is biased in the NDR region giving rise to electrical gain and microwave self-sustained oscillations Taking advantage of the RTD’s NDR distinctive characteristics, we demonstrate efficient detection of gigahertz (GHz modulated optical carriers and optical control of a RTD GHz oscillator. RTD-PD based devices can have applications in generation and optical control of GHz low-phase noise oscillators, clock recovery systems, and fiber optic enabled radio frequency communication systems.

Inductively Coupled Plasma-Induced Etch Damage of GaN p-n Junctions

International Nuclear Information System (INIS)

SHUL, RANDY J.; ZHANG, LEI; BACA, ALBERT G.; WILLISON, CHRISTI LEE; HAN, JUNG; PEARTON, S.J.; REN, F.

1999-01-01

Plasma-induced etch damage can degrade the electrical and optical performance of III-V nitride electronic and photonic devices. We have investigated the etch-induced damage of an Inductively Coupled Plasma (ICP) etch system on the electrical performance of mesa-isolated GaN pn-junction diodes. GaN p-i-n mesa diodes were formed by Cl 2 /BCl 3 /Ar ICP etching under different plasma conditions. The reverse leakage current in the mesa diodes showed a strong relationship to chamber pressure, ion energy, and plasma flux. Plasma induced damage was minimized at moderate flux conditions (≤ 500 W), pressures ≥2 mTorr, and at ion energies below approximately -275 V

Effect of interface voids on electroluminescence colors for ZnO microdisk/p-GaN heterojunction light-emitting diodes

Science.gov (United States)

Mo, Ran; Choi, Ji Eun; Kim, Hyeong Jin; Jeong, Junseok; Kim, Jong Chan; Kim, Yong-Jin; Jeong, Hu Young; Hong, Young Joon

2017-10-01

This study investigates the influence of voids on the electroluminescence (EL) emission color of ZnO microdisk/p-GaN heterojunction light-emitting diodes (LEDs). For this study, position-controlled microdisk arrays were fabricated on patterned p-GaN via wet chemical epitaxy of ZnO, and specifically, the use of trisodium citrate dihydrate (TCD) yielded high-density voids at the bottom of the microdisk. Greenish yellow or whitish blue EL was emitted from the microdisk LEDs formed with or without TCD, respectively, at reverse-bias voltages. Such different EL colors were found to be responsible for the relative EL intensity ratio between indigo and yellow emission peaks, which were originated from radiative recombination at p-GaN and ZnO, respectively. The relative EL intensity between dichromatic emissions is discussed in terms of (i) junction edge effect provoked by interfacial voids and (ii) electron tunneling probability depending on the depletion layer geometry.

Simulation based comparative analysis of photoresponse in front- and back-illuminated GaN P-I-N ultraviolet photodetectors

Science.gov (United States)

Wang, Jun; Guo, Jin; Xie, Feng; Wang, Guosheng; Wu, Haoran; Song, Man; Yi, Yuanyuan

2016-10-01

This paper presents the comparative analysis of influence of doping level and doping profile of the active region on zero bias photoresponse characteristics of GaN-based p-i-n ultraviolet (UV) photodetectors operating at front- and back-illuminated. A two dimensional physically-based computer simulation of GaN-based p-i-n UV photodetectors is presented. We implemented GaN material properties and physical models taken from the literature. It is shown that absorption layer doping profile has notable impacts on the photoresponse of the device. Especially, the effect of doping concentration and distribution of the absorption layer on photoresponse is discussed in detail. In the case of front illumination, comparative to uniform n-type doping, the device with n-type Gaussian doping profiles at absorption layer has higher responsivity. Comparative to front illumination, back illuminated detector with p-type doping profiles at absorption layer has higher maximum photoresponse, while the Gaussian doping profiles have a weaker ability to enhance the device responsivity. It is demonstrated that electric field distribution, mobility degradation, and recombinations are jointly responsible for the variance of photoresponse. Our work enriches the understanding and utilization of GaN based p-i-n UV photodetectors.

The development of p-type silicon detectors for the high radiation regions of the LHC

CERN Document Server

Hanlon, M D L

1998-01-01

This thesis describes the production and characterisation of silicon microstrip detectors and test structures on p-type substrates. An account is given of the production and full parameterisation of a p-type microstrip detector, incorporating the ATLAS-A geometry in a beam test. This detector is an AC coupled device incorporating a continuous p-stop isolation frame and polysilicon biasing and is typical of n-strip devices proposed for operation at the LHC. It was successfully read out using the FELix-128 analogue pipeline chip and a signal to noise (s/n) of 17+-1 is reported, along with a spatial resolution of 14.6+-0.2 mu m. Diode test structures were fabricated on both high resistivity float zone material and on epitaxial material and subsequently irradiated with 24 GeV protons at the CERN PS up to a dose of (8.22+-0.23) x 10 sup 1 sup 4 per cm sup 2. An account of the measurement program is presented along with results on the changes in the effective doping concentration (N sub e sub f sub f) with irradiat...

Diode characteristics and residual deep-level defects of p+n abrupt junctions fabricated by rapid thermal annealing of boron implanted silicon

International Nuclear Information System (INIS)

Usami, A.; Katayama, M.; Wada, T.; Tokuda, Y.

1987-01-01

p + n diodes were fabricated by rapid thermal annealing (RTA) of boron implanted silicon in the annealing temperature range 700-1100 0 C for around 7 s, and the RTA temperature dependence of electrical characteristics of these diodes was studied. Deep-level transient spectroscopy (DLTS) measurements were made to evaluate residual deep-level defects in the n-type bulk. Three electron traps were observed in p + n diodes fabricated by RTA at 700 0 C. It was considered that these three traps were residual point defects near the tail of the implantation damage after RTA. Residual defect concentrations increased in the range 700-900 0 C and decreased in the range 1000-1100 0 C. The growth of defects in the bulk was ascribed to the diffusion of defects from the implanted layer during RTA. Concentrations of electron traps observed in p + n diodes fabricated by RTA at 1100 0 C were approx. 10 12 cm -3 . It was found that these residual deep-level defects observed by DLTS were inefficient generation-recombination centres since the reverse current was independent of the RTA temperatures. (author)

Photosensitive and temperature-dependent I–V characteristics of p-NiO film/n-ZnO nanorod array heterojunction diode

Energy Technology Data Exchange (ETDEWEB)

Long, Hao; Ai, Lei [Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education of China, Department of Electronic Science and Technology, School of Physics and Technology, Wuhan University, Wuhan, Hubei 430072 (China); Li, Songzhan [Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education of China, Department of Electronic Science and Technology, School of Physics and Technology, Wuhan University, Wuhan, Hubei 430072 (China); School of Electronic and Electrical Engineering, Wuhan Textile University, Wuhan, Hubei 430073 (China); Huang, Huihui; Mo, Xiaoming; Wang, Haoning; Chen, Zhao; Liu, Yuping [Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education of China, Department of Electronic Science and Technology, School of Physics and Technology, Wuhan University, Wuhan, Hubei 430072 (China); Fang, Guojia, E-mail: gjfang@whu.edu.cn [Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education of China, Department of Electronic Science and Technology, School of Physics and Technology, Wuhan University, Wuhan, Hubei 430072 (China)

2014-05-01

Highlights: • A p-NiO film/n-ZnO nanorod array heterojunction was prepared. • The heterojunction shows good morphology and crystal properties. • The diode exhibits excellent rectifying behavior. • The diode exhibits strong temperature dependent I–V properties. • The hybrid diode shows good photosensitivity under the ultraviolet irradiation. - Abstract: A p-NiO film/n-ZnO nanorod (NR) array heterojunction was prepared by deposition of NiO film on ZnO NRs using radio-frequency reactive magnetron sputtering. The well-aligned ZnO NRs were fabricated by a simple and economic hydrothermal method on a ZnO:Al-coated glass substrate. Good morphology and crystal properties of the fabricated ZnO NRs and NiO film were confirmed by scanning electron microscopy and X-ray diffraction. The p–n heterojunction exhibits excellent rectifying behaviour and strong temperature-dependent current–voltage properties in the range from −50 to 80 °C. The hybrid NR heterojunction diode shows good photosensitivity under the irradiation of 365 nm ultraviolet light. These results present potential applications in future microelectronic devices based on NiO films and the one-dimensional ZnO nanomaterials.

Electrical performance of GaN diode as betavoltaic isotope battery energy converter

International Nuclear Information System (INIS)

Wang Guanquan; Yang Yuqing; Liu Yebing; Hu Rui; Li Hao; Zhong Zhengkun; Luo Shunzhong

2013-01-01

Two kinds of GaN PiN diodes were prepared to be the energy converters of betavoltaic batteries, and irradiated by 63 Ni and 3 H radioactive sources. The I sc was 5.4 nA and V oc was 771 mV for 63 Ni source; the I sc was 10.8 nA and V oc was 839 mV for 3 H source. These results show that their V oc are far better than silicon diodes', but their I sc are poor. And there are some differences between the theory values and experiment results. There would be greatly improving space in electrical performance of beta voltaic isotope batteries with GaN diodes as the energy converters, if the dislocation could be reduced in GaN material producing process, the Ohmic contact could be prepared very well and the diodes configuration could be designed more optimizedly in the future. (authors)

Fabrication and characterization of high quality n-ZnO/p-GaN heterojunction light emission diodes

International Nuclear Information System (INIS)

Zheng Hao; Mei, Z.X.; Zeng, Z.Q.; Liu, Y.Z.; Guo, L.W.; Jia, J.F.; Xue, Q.K.; Zhang, Z.; Du, X.L.

2011-01-01

High quality single crystalline n-type ZnO film was grown on p-type GaN substrate using molecular beam epitaxy. Transmission electron microscopy reveals a sharp ZnO/GaN interface. Light-emitting diode was fabricated from this heterostructure, and a turn-on voltage of ∼ 3.4 V was demonstrated. We found that the emission peak shifts from violet (430 nm) to near-ultraviolet (375 nm) when the driving current increases from 0.38 mA to 3.08 mA. This intriguing phenomenon can be understood by charged carrier's radical recombination occurring at both sides of the device, and the current enhancement of ZnO emission efficiency.

Nano-crystalline p-ZnGa{sub 2}Te{sub 4}/n-Si as a new heterojunction diode

Energy Technology Data Exchange (ETDEWEB)

Sakr, G.B. [Nano-Science Lab., Department of Physics, Faculty of Education, Ain Shams University, Roxy, Cairo (Egypt); Fouad, S.S. [Department of Physics, Faculty of Education, Ain Shams University, Roxy, Cairo (Egypt); Yahia, I.S., E-mail: dr_isyahia@yahoo.com [Nano-Science Lab., Department of Physics, Faculty of Education, Ain Shams University, Roxy, Cairo (Egypt); Semicondcutor Lab., Department of Physics, Faculty of Education, Ain Shams University, Roxy, Cairo (Egypt); Department of Physics, Faculty of Science, King Khalid University, P.O. Box 9004, Abha (Saudi Arabia); Abdel Basset, D.M. [Department of Physics, Faculty of Education, Ain Shams University, Roxy, Cairo (Egypt); Yakuphanoglu, F. [Physics Department, Faculty of Science and Arts, Firat University, Elazig (Turkey)

2013-02-15

Graphical abstract: Display Omitted Highlights: ► ZnGa{sub 2}Te{sub 4}/Si thin film was prepared by thermal evaporation technique. ► XRD and AFM graphs support the nano-crystalline of the studied device. ► Dark current–voltage characteristics of the heterojunction diode were investigated. ► Electrical parameters and conduction mechanism were determined. ► Conduction mechanisms were controlled by TE, SCLC and TCLC. -- Abstract: In this communication, ZnGa{sub 2}Te{sub 4} thin film was prepared by thermal evaporation technique on n-Si substrate. P-ZnGa{sub 2}Te{sub 4}/n-Si heterojunction diode was fabricated. The structure of ZnGa{sub 2}Te{sub 4} thin film was checked by XRD pattern and confirmed by AFM micrographs. The dark current–voltage characteristics of the heterojunction diode were investigated to determine the electrical parameters and conduction mechanism as a function of forward and reverse biasing conditions in the range (−10 V to 10 V) at temperature interval (303–423 K). The conduction mechanism was controlled by thermionic emission, space charge limited (SCLC) and trap-charge limited current (TCLC) mechanisms. The basic parameters such as the series resistance R{sub s}, the shunt resistance R{sub sh}, the ideality factor n and the barrier height φ{sub b} of the diode, the total density of trap states N{sub 0} and the exponential trapping distribution P{sub o} were determined. The obtained results showed that ZnGa{sub 2}Te{sub 4} is a good candidate for the applications of electronic devices.

Two dimensional MoS{sub 2}/graphene p-n heterojunction diode: Fabrication and electronic characteristics

Energy Technology Data Exchange (ETDEWEB)

Su, Wei-Jhih [Graduate Institute of Electro-Optical Engineering, National Taiwan University of Science and Technology, 43, Section 4, Keelung Road, Taipei 10607, Taiwan (China); Chang, Hsuan-Chen [Department of Electronic and Computer Engineering, National Taiwan University of Science and Technology, 43, Section 4, Keelung Road, Taipei 10607, Taiwan (China); Shih, Yi-Ting [Graduate Institute of Electro-Optical Engineering, National Taiwan University of Science and Technology, 43, Section 4, Keelung Road, Taipei 10607, Taiwan (China); Wang, Yi-Ping [Department of Electronic and Computer Engineering, National Taiwan University of Science and Technology, 43, Section 4, Keelung Road, Taipei 10607, Taiwan (China); Hsu, Hung-Pin [Department of Electronic Engineering, Ming Chi University of Technology, 84 Gungjuan Road, New Taipei City 24301, Taiwan (China); Huang, Ying-Sheng [Graduate Institute of Electro-Optical Engineering, National Taiwan University of Science and Technology, 43, Section 4, Keelung Road, Taipei 10607, Taiwan (China); Department of Electronic and Computer Engineering, National Taiwan University of Science and Technology, 43, Section 4, Keelung Road, Taipei 10607, Taiwan (China); Lee, Kuei-Yi, E-mail: kylee@mail.ntust.edu.tw [Graduate Institute of Electro-Optical Engineering, National Taiwan University of Science and Technology, 43, Section 4, Keelung Road, Taipei 10607, Taiwan (China); Department of Electronic and Computer Engineering, National Taiwan University of Science and Technology, 43, Section 4, Keelung Road, Taipei 10607, Taiwan (China)

2016-06-25

Molybdenum disulfide (MoS{sub 2}) films are currently the most potential semiconductor materials of the two-dimensional nano-material heterojunction. Few-layer MoS{sub 2} is an n-type semiconductor that has good mechanical strength, high carrier mobility, and has similar thickness as graphene. Graphene is presently the thinnest two-dimensional material with good thermal conductivity and high carrier mobility. The graphene Fermi level can be precisely controlled using the oxygen adsorption. Therefore, graphene can be tuned from zero-gap to p-type semiconductor material using the amount of adsorbed oxygen. In this study we combine few-layer MoS{sub 2} and graphene to produce a heterojunction and exhaustively study the interface properties for heterojunction diode application. According to the results, the MoS{sub 2} band-gap increases with decreasing thickness. The I–V characteristics of the MoS{sub 2}/Graphene p-n junction diodes can be precisely tuned by adjusting different thicknesses of the MoS{sub 2} films. By applying our fabricating method, MoS{sub 2}/Graphene heterojunction diode can be easily constructed and have potential to different applications. - Highlights: • We controlled the layer thickness of MoS{sub 2} by different exfoliation times. • We presented Raman scattering of MoS{sub 2} and define their layers number. • The few-layer MoS{sub 2}/graphene pn junction diode was synthesized. • We measured the device current and voltage characteristics. • The built-in potential barrier could be adjusted by controlling MoS{sub 2} thicknesses.

The bipolar silicon microstrip detector: A proposal for a novel precision tracking device

International Nuclear Information System (INIS)

Horisberger, R.

1990-01-01

It is proposed to combine the technology of fully depleted microstrip detectors fabricated on n doped high resistivity silicon with the concept of the bipolar transistor. This is done by adding a n ++ doped region inside the normal p + implanted region of the reverse biased p + n diode. The resulting structure has amplifying properties and is referred to as bipaolar pixel transistor. The simplest readout scheme of a bipolar pixel array by an aluminium strip bus leads to the bipolar microstrip detector. The bipolar pixel structure is expected to give a better signal-to-noise performance for the detection of minimum ionizing charged particle tracks than the normal silicon diode strip detector and therefore should allow in future the fabrication of thinner silicon detectors for precision tracking. (orig.)

Change of I-V characteristics of SiC diodes upon reactor irradiation; Modification des caracteristiques I-V de jonctions p-n au SiC du fait d'une irradiation dans un reacteur; Izmeneniya kharakteristik I-V vyrashchennogo v SiC perekhoda tipa p-n posle oblucheniya ego v reaktore; Modificaciones que sufren por irradiacion en un reactor las caracteristicas I-V de uniones p-n en SiC

Energy Technology Data Exchange (ETDEWEB)

Heerschap, M; De Coninck, R [Solid State Physics Dept., SCK-CEN, Mol (Belgium)

1962-04-15

In search for semiconductors, which can be used in high-flux reactors in order to measure flux distributions, we irradiated SiC p-n junctions in the Belgium BR-1 reactor. Two types of SiC-diodes of different origin have been irradiated. These junctions are grown in the Lely-furnace. The change in forward and reverse characteristics have been measured during and after irradiation up to temperatures of 150{sup o}C, while measurements up to a temperature of 500{sup o}C are in progress. It has been found that one type resists BR-1 neutrons up to an integrated flux of 10{sup 15} n/cm{sup 2}, while the other resists irradiation up to a flux of 10{sup 17} n/cm{sup 2}. The changes in characteristics are given as well as the result of some annealing experiments. (author) [French] En recherchant des semi-conducteurs pouvant servir a mesurer les distributions de flux dans les reacteurs a haut flux de neutrons, les auteurs ont irradie des jonctions p-n au SiC dans le reacteur belge BR-1. Deux types de diodes a SiC d'origines differentes ont ete ainsi irradies. Les jonctions en question sont preparees par etirage dans le four Lely. Les auteurs ont mesure les modifications subies par les caracteristiques I-V apres et pendant l'irradiation a des temperatures allant jusqu'a 150{sup o}C; ils poursuivent leurs mesures dans la gamme des temperatures allant de 150{sup o}C a 500{sup o}C. Us ont constate que l'un des types de diode a SiC resiste aux neutrons du reacteur BR-1 jusqu'a 10{sup 15} n/cm{sup 2}, tandis que l'autre type resiste a l'irradiation jusqu'a 10{sup 17} n/cm{sup 2}. Les auteurs indiquent les modifications subies par les caracteristiques, ainsi que le resultat de certaines experiences de recuit. (author) [Spanish] Los autores estan tratando de encontrar semiconductores con los que sea posible medir distribuciones de flujo en reactores de flujo elevado, y con este fin irradiaron uniones p-n del SiC en el reactor BR-1 de Belgica. Irradiaron dos tipos de diodos de SiC de

Study of seed layer effect in nuclear battery with P-N diode junction

Energy Technology Data Exchange (ETDEWEB)

Uhm, Young Rang; Son, Kwang Jae; Lee, Jun Sig [Korea Atomic Energy Research Institute, Daejeon (Korea, Republic of); Choi, Byoung Gun [Kookmin Univ., Seoul (Korea, Republic of)

2014-10-15

A nuclear battery with diode junction is a device that converts nuclear radiation directly to electric power. The mechanism of a nuclear battery is same as the P-N junction diode for solar cell application. The photovoltaic is operated by converted photons to electrical energy in the junction. In betavoltaic battery, beta particles are collected and converted to electrical energy as similar principle as photovoltaic. A very low current, order of nano or micro amps, is generated in devices. If a radioisotope (RI) with a long halflife (over 50 years) is used, a lifetime of a power source is extended as long as halflife time of RI.. Some special applications require long-lived compact power sources. These include space equipment, sensors in remote locations (space, underground, etc.), and implantable medical devices. Conventionally, these sources rely on converting chemical energy to electricity. This means they require a large storage of chemical 'fuel' since the amount of energy released per reaction is small. The nuclear battery is a novel solution to solve the power needs of these applications. For the {sup 63}Ni beta-source we used, the half-life is 100.2 years. Hence, the power sources we describe could extend a system's operating life by several decades or even a century, during which time the system could gain learned behavior without worrying about the power turning off. Radioactive thin-film-based power sources also have energy density orders of magnitude higher than chemical-reaction-based energy sources. In this study, we fabricate nuclear battery using {sup 63}Ni source with diode junction, and studied seed layer effect for optimization of structure of p-n junction.

Pixelized M-pi-n CdTe detector coupled to Medipix2 readout chip

CERN Document Server

Kalliopuska, J; Penttila, R; Andersson, H; Nenonen, S; Gadda, A; Pohjonen, H; Vanttajac, I; Laaksoc, P; Likonen, J

2011-01-01

We have realized a simple method for patterning an M-pi-n CdTe diode with a deeply diffused pn-junction, such as indium anode on CdTe. The method relies on removing the semiconductor material on the anode-side of the diode until the physical junction has been reached. The pixelization of the p-type CdTe diode with an indium anode has been demonstrated by patterning perpendicular trenches with a high precision diamond blade and pulsed laser. Pixelization or microstrip pattering can be done on both sides of the diode, also on the cathode-side to realize double sided detector configuration. The article compares the patterning quality of the diamond blade process, pulsed pico-second and femto-second lasers processes. Leakage currents and inter-strip resistance have been measured and are used as the basis of the comparison. Secondary ion mass spectrometry (SIMS) characterization has been done for a diode to define the pn-junction depth and to see the effect of the thermal loads of the flip-chip bonding process. Th...

Plasma vapor deposited n-indium tin oxide/p-copper indium oxide heterojunctions for optoelectronic device applications

Science.gov (United States)

Jaya, T. P.; Pradyumnan, P. P.

2017-12-01

Transparent crystalline n-indium tin oxide/p-copper indium oxide diode structures were fabricated on quartz substrates by plasma vapor deposition using radio frequency (RF) magnetron sputtering. The p-n heterojunction diodes were highly transparent in the visible region and exhibited rectifying current-voltage (I-V) characteristics with a good ideality factor. The sputter power during fabrication of the p-layer was found to have a profound effect on I-V characteristics, and the diode with the p-type layer deposited at a maximum power of 200 W exhibited the highest value of the diode ideality factor (η value) of 2.162, which suggests its potential use in optoelectronic applications. The ratio of forward current to reverse current exceeded 80 within the range of applied voltages of -1.5 to +1.5 V in all cases. The diode structure possessed an optical transmission of 60-70% in the visible region.

Fabrication of p-{beta}-Fe{sub 1{minus}x}Mn{sub x}Si{sub 2}/nSi heterostructure diode and their electrical and optical properties

Energy Technology Data Exchange (ETDEWEB)

Takada, T; Katsumata, H; Makita, Y; Kobayashi, N; Hasegawa, M; Uekusa, S

1997-07-01

The authors report on the fabrication of p-type {beta}-FeSi{sub 2} layers on n-type Si(100) substrates and the investigation of their p-n diode characteristics. Since the undoped {beta}-FeSi{sub 2} layers have typically shown n-type conductivity, the p-type layers were formed by the introduction of Mn impurity into {beta}-FeSi{sub 2} layers using two types of doping methods; one is an Electron-Beam-Deposition (EBD) procedure of Fe{sub 1{minus}x}Mn{sub x}Si{sub 2} (x < {approximately}0.1) at room temperature and subsequent annealing at 900 C for 1--120 min, where FeSi{sub 2} ingots added with Mn({approximately}10%) were used as starting materials. The other is a {sup 55}Mn{sup +}-implantation into {beta}-FeSi{sub 2} layers formed by EBD and subsequent annealing at 850 C for 1--120 min. From van der Pauw measurements, p-type {beta}-Fe{sub 1{minus}x}Mn{sub x}Si{sub 2} layers with the resistivity of 0.0036--0.031 {Omega}{center{underscore}dot}cm and hole mobility of 11.9--89.0 cm{sup 2}/V{center{underscore}dot}sec were found to be successfully formed on n-Si substrates by both doping methods. The p-n diode characteristics of these heterostructure diodes were investigated by I-V and C-V measurements. The results indicate that the carrier distribution does not agree with either ideal one-side step or one-side slop junctions, although optical transmittance and reflectance measurements indicate that the silicide/Si interface is of good quality.

Performance evaluation of a lossy transmission lines based diode detector at cryogenic temperature.

Science.gov (United States)

Villa, E; Aja, B; de la Fuente, L; Artal, E

2016-01-01

This work is focused on the design, fabrication, and performance analysis of a square-law Schottky diode detector based on lossy transmission lines working under cryogenic temperature (15 K). The design analysis of a microwave detector, based on a planar gallium-arsenide low effective Schottky barrier height diode, is reported, which is aimed for achieving large input return loss as well as flat sensitivity versus frequency. The designed circuit demonstrates good sensitivity, as well as a good return loss in a wide bandwidth at Ka-band, at both room (300 K) and cryogenic (15 K) temperatures. A good sensitivity of 1000 mV/mW and input return loss better than 12 dB have been achieved when it works as a zero-bias Schottky diode detector at room temperature, increasing the sensitivity up to a minimum of 2200 mV/mW, with the need of a DC bias current, at cryogenic temperature.

Planar InP-based Schottky barrier diodes for terahertz applications

International Nuclear Information System (INIS)

Zhou Jingtao; Yang Chengyue; Ge Ji; Jin Zhi

2013-01-01

Based on characteristics such as low barrier and high electron mobility of lattice matched In 0.53 Ga 0.47 As layer, InP-based Schottky barrier diodes (SBDs) exhibit the superiorities in achieving a lower turn-on voltage and series resistance in comparison with GaAs ones. Planar InP-based SBDs have been developed in this paper. Measurements show that a low forward turn-on voltage of less than 0.2 V and a cutoff frequency of up to 3.4 THz have been achieved. The key factors of the diode such as series resistance and the zero-biased junction capacitance are measured to be 3.32 Ω; and 9.1 fF, respectively. They are highly consistent with the calculated values. The performances of the InP-based SBDs in this work, such as low noise and low loss, are promising for applications in the terahertz mixer, multiplier and detector circuits. (semiconductor devices)

A car-borne highly sensitive near-IR diode-laser methane detector

International Nuclear Information System (INIS)

Berezin, A G; Ershov, Oleg V; Shapovalov, Yu P

2003-01-01

A highly sensitive automated car-borne detector for measuring methane concentration in real time is designed, developed and tested under laboratory and field conditions. Measurements were made with the help of an uncooled tunable near-IR 1.65-μm laser diode. The detector consists of a multipass optical cell with a 45-m long optical path and a base length of 0.5 m. The car-borne detector is intended for monitoring the methane concentration in air from the moving car to reveal the leakage of domestic gas. The sensitivity limit (standard deviation) under field conditions is 1 ppm (20 ppb under laboratory conditions) for a measuring time of 0.4 s. The measuring technique based on the detection of a single methane line ensured a high selectivity of methane detector relative to other gases. The methane detector can be easily modified for measuring other simple-molecule gases (e.g., CO, CO 2 , HF, NO 2 , H 2 O) by replacing the diode laser and varying the parameters of the control program. (special issue devoted to the memory of academician a m prokhorov)

Miniature silicon diode matrix-detector for in vivo measurement of 133xenon disappearance in the canine myocardium following local tissue injection

DEFF Research Database (Denmark)

Svendsen, Jesper Hastrup; Rasmussen, H B; Damgaard, Y

1992-01-01

recording appearing from the gamma-energy of the photopeak. The detector matrix concept allows elimination of motion artefacts and indicator distribution in the myocardial tissue. Due to the uniformity and low cost of Si-diodes the perspective may be the introduction as a disposable transducer useful during......After local tissue depositioning of 133Xenon (133Xe) the regional washout is usually registered by a NaI(Tl) detector. The residual radioactivity of 133Xe is usually measured at its 81 keV photopeak. However, using small Silicon (Si) photodiodes it is feasible to measure only the low-energy...... activity in the X-ray energy range. In the myocardium of open chest dogs 133Xe washout measurements by a matrix of Si diodes composed in a 4 x 4 array and a conventional NaI(Tl) detector were carried out simultaneously. Fourteen separate pairs of measurements were performed in 3 dogs. When the Si...

Investigation of p-n-junctions in n-InP based on voltage dependence of differential capacity

International Nuclear Information System (INIS)

Agaev, Ja.; Atabaev, Kh.; Gazakov, O.; Sadykov, K.B.

1976-01-01

The barrier capacity of alloyed p-n transitions on n-InP crystals grown by the crystallization method has been investigated. The transitions have been obtained by fusing In + 3 - 10% Zn. Step-by-step distribution of the impurity concentration in the space charge layer takes place in the alloyed diodes under investigation. The coefficient characterizing the impurity distribution in the space charge layer has been determined. The well-expressed dependence of I/C 2 =f/u) observed both at a room temperature and at the temperature of liquid nitrogen indicates that the density of ground carriers in the p-n regions are constant at a definite distance from the p-n transition. The main parameters of p-n transitions have been determined

Recombination centers and electrical characteristics in silicon power p-i-n diodes irradiated with high energy electrons

International Nuclear Information System (INIS)

Fuochi, P.G.; Martelli, A.; Passerini, B.; Zambelli, M.

1988-01-01

Recombination centers introduced by irradiation with 12 MeV electrons in large area silicon diodes with p-i-n structure are studied with the Deep Level Transient Spectroscopy technique (DLTS). The effects of these levels on the electrical characteristics of the devices are related to their position Esub(t) in the silicon forbidden gap, their concentration and their electron capture cross section. Changes of defect configuration during an annealing process at 360 0 C have been observed and a detailed analysis of the DLTS spectra has shown a complex defect pattern. Four major recombination centers have been identified: Esub(c) - Esub(t) = 0.17 eV, Esub(c) - Esub(t) = 0.19 eV, Esub(c) -Esub(t) 0.31 eV, Esub(c) - Esub(t) = 0.39 eV, where Esub(c) is the energy corresponding to the lower limit of the conduction band. The first energy level, known as A-center, is the dominant recombination level controlling the minority carrier lifetime after room temperature irradiation. As the annealing proceeds the center at Esub(c) - Esub(t) = 0.31 eV becomes the dominant one. The complex structure of the centers has been studied and demonstrated with the aid of proper modelling implemented on a set of numerical simulation tools. In this way it has been possible to analyze more accurately the defect kinetics during annealing. The study of the defect behaviour during the annealing process has resulted in an improved application of electron irradiation as a standard production technique in the manufacturing process of high power devices. (author)

Polarization-enhanced InGaN/GaN-based hybrid tunnel junction contacts to GaN p–n diodes and InGaN LEDs

KAUST Repository

Mughal, Asad J.

2017-11-27

Improved turn-on voltages and reduced series resistances were realized by depositing highly Si-doped n-type GaN using molecular beam epitaxy on polarization-enhanced p-type InGaN contact layers grown using metal–organic chemical vapor deposition. We compared the effects of different Si doping concentrations and the addition of p-type InGaN on the forward voltages of p–n diodes and light-emitting diodes, and found that increasing the Si concentrations from 1.9 × 1020 to 4.6 × 1020 cm−3 and including a highly doped p-type InGaN at the junction both contributed to reductions in the depletion width, the series resistance of 4.2 × 10−3–3.4 × 10−3 Ωcenterdotcm2, and the turn-on voltages of the diodes.

Polarization-enhanced InGaN/GaN-based hybrid tunnel junction contacts to GaN p–n diodes and InGaN LEDs

KAUST Repository

Mughal, Asad J.; Young, Erin C.; Alhassan, Abdullah I.; Back, Joonho; Nakamura, Shuji; Speck, James S.; DenBaars, Steven P.

2017-01-01

Improved turn-on voltages and reduced series resistances were realized by depositing highly Si-doped n-type GaN using molecular beam epitaxy on polarization-enhanced p-type InGaN contact layers grown using metal–organic chemical vapor deposition. We compared the effects of different Si doping concentrations and the addition of p-type InGaN on the forward voltages of p–n diodes and light-emitting diodes, and found that increasing the Si concentrations from 1.9 × 1020 to 4.6 × 1020 cm−3 and including a highly doped p-type InGaN at the junction both contributed to reductions in the depletion width, the series resistance of 4.2 × 10−3–3.4 × 10−3 Ωcenterdotcm2, and the turn-on voltages of the diodes.

Performance of a high-resolution CsI(Tl)-PIN readout detector

International Nuclear Information System (INIS)

Kudenko, Yu.G.; Imazato, J.

1992-10-01

A study of a large-volume CsI(Tl) detector with a PIN diode readout was carried out. Our results show a light output of ≤20000 photoelectrons/MeV, an equivalent noise charge (rms) of about 900 electrons, and an equivalent noise level of ≤ 60 keV. We obtained an energy resolution of 11.2% (fwhm) for 1275 keV gamma rays from a 22 Na source. The characteristics of the PIN - preamplifier system as well as the parameters of a small CsI(Tl) - PIN detector with a direct and wavelength shifter readout are also reported. (author)

Solution-processed n-ZnO nanorod/p-Co{sub 3}O{sub 4} nanoplate heterojunction light-emitting diode

Energy Technology Data Exchange (ETDEWEB)

Kim, Jong-Woo; Lee, Su Jeong; Biswas, Pranab [Department of Materials Science and Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul 03722 (Korea, Republic of); Lee, Tae Il [Department of BioNano Technology, Gachon University, 1342 Seongnam Daero, Seongnam 13120 (Korea, Republic of); Myoung, Jae-Min, E-mail: jmmyoung@yonsei.ac.kr [Department of Materials Science and Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul 03722 (Korea, Republic of)

2017-06-01

Highlights: • The n-ZnO nanorods were epitaxially grown on p-Co{sub 3}O{sub 4} nanoplates. • The heteroepitaxial p-n junction was fabricated by using hydrothermal process. • The LEDs emitted reddish-orange and violet light related to ZnO point defects. • The Co{sub 3}O{sub 4} nanoplates function as a hole injection layer. • Junction between 1D NRs and 2D NPs provides a new approach to design nanostructures. - Abstract: A heterojunction light-emitting diode (LED) based on p-type cobalt oxide (Co{sub 3}O{sub 4}) nanoplates (NPs)/n-type zinc oxide (ZnO) nanorods (NRs) is demonstrated. Using a low-temperature aqueous solution process, the n-type ZnO NRs were epitaxially grown on Co{sub 3}O{sub 4} NPs which were two-dimensionally assembled by a modified Langmuir-Blodgett process. The heterojunction LEDs exhibited a typical rectifying behavior with a turn-on voltage of about 2 V and emitted not only reddish-orange light at 610 nm but also violet light at about 400 nm. From the comparative analyses of electroluminescence and photoluminescence, it was determined that the reddish-orange light emission was related to the electronic transitions from zinc interstitials (Zn{sub i}) to oxygen interstitials (O{sub i}) or conduction-band minimum (CBM) to oxygen vacancies (V{sub O}), and the violet light emission was attribute to the transition from CBM to valence-band maximum (VBM) or Zn{sub i} to zinc vacancies (V{sub Zn}).

Polarization-engineered GaN/InGaN/GaN tunnel diodes

International Nuclear Information System (INIS)

Krishnamoorthy, Sriram; Nath, Digbijoy N.; Akyol, Fatih; Park, Pil Sung; Esposto, Michele; Rajan, Siddharth

2010-01-01

We report on the design and demonstration of polarization-engineered GaN/InGaN/GaN tunnel junction diodes with high current density and low tunneling turn-on voltage. Wentzel-Kramers-Brillouin calculations were used to model and design tunnel junctions with narrow band gap InGaN-based barrier layers. N-polar p-GaN/In 0.33 Ga 0.67 N/n-GaN heterostructure tunnel diodes were grown using molecular beam epitaxy. Efficient interband tunneling was achieved close to zero bias with a high current density of 118 A/cm 2 at a reverse bias of 1 V, reaching a maximum current density up to 9.2 kA/cm 2 . These results represent the highest current density reported in III-nitride tunnel junctions and demonstrate the potential of III-nitride tunnel devices for a broad range of optoelectronic and electronic applications.

Investigation of the Electrical Characteristics of Al/p-Si/Al Schottky Diode

Science.gov (United States)

Şenarslan, Elvan; Güzeldir, Betül; Sağlam, Mustafa

2016-04-01

In this study, p-type Si semiconductor wafer with (100) orientation, 400 μm thickness and 1-10 Ω cm resistivity was used. The Si wafer before making contacts were chemically cleaned with the Si cleaning procedure which for remove organic contaminations were ultrasonically cleaned at acetone and methanol for 10 min respectively and then rinsed in deionized water of 18 MΩ and dried with high purity N2. Then respectively RCA1(i.e., boiling in NH3+H2O2+6H2O for 10 min at 60°C ), RCA2 (i.e., boiling in HCl+H2O2+6H2O for 10 min at 60°C ) cleaning procedures were applied and rinsed in deionized water followed by drying with a stream of N2. After the cleaning process, the wafer is immediately inserted in to the coating unit. Ohmic contact was made by evaporating of Al on the non-polished side of the p-Si wafer pieces under ~ 4,2 10-6 Torr pressure. After process evaporation, p-Si with omic contac thermally annealed 580°C for 3 min in a quartz tube furnace in N2. Then, the rectifier contact is made by evaporation Al metal diameter of about 1.0 mm on the polished surface of p-Si in turbo molecular pump at about ~ 1 10-6 Torr. Consequently, Al/p-Si/Al Schottky diode was obtained. The I-V measurements of this diode performed by the use of a KEITLEY 487 Picoammeter/Voltage Source and the C-V measurements were performed with HP 4192A (50-13 MHz) LF Impedance Analyzer at room temperature and in dark.

Evaluation Of Silicon Diodes As IN-SITU Cryogenic Field Emission Detectors For SRF Cavity Development

International Nuclear Information System (INIS)

Palczewski, Ari; Geng, Rongli

2012-01-01

We performed in-situ cryogenic testing of four silicon diodes as possible candidates for field emission (FE) monitors of superconducting radio frequency (SRF) cavities during qualification testing and in accelerator cryo-modules. We evaluated diodes from 2 companies - from Hamamatsu corporation model S1223-01; and from OSI Optoelectronics models OSD35-LR-A, XUV-50C, and FIL-UV20. The measurements were done by placing the diodes in superfluid liquid helium near the top of a field emitting 9-cell cavity during its vertical test. For each diode, we will discuss their viability as a 2K cryogenic detector for FE mapping of SRF cavities and the directionality of S1223-01 in such environments. We will also present calibration curves between the diodes and JLab's standard radiation detector placed above the Dewar's top plate.

Experimental and computational investigation of graphene/SAMs/n-Si Schottky diodes

Science.gov (United States)

Aydin, H.; Bacaksiz, C.; Yagmurcukardes, N.; Karakaya, C.; Mermer, O.; Can, M.; Senger, R. T.; Sahin, H.; Selamet, Y.

2018-01-01

We have investigated the effect of two different self-assembled monolayers (SAMs) on electrical characteristics of bilayer graphene (BLG)/n-Si Schottky diodes. Novel 4″bis(diphenylamino)-1, 1‧:3″-terphenyl-5‧ carboxylic acids (TPA) and 4,4-di-9H-carbazol-9-yl-1,1‧:3‧1‧-terphenyl-5‧ carboxylic acid (CAR) aromatic SAMs have been used to modify n-Si surfaces. Cyclic voltammetry (CV) and Kelvin probe force microscopy (KPFM) results have been evaluated to verify the modification of n-Si surface. The current-voltage (I-V) characteristics of bare and SAMs modified devices show rectification behaviour verifying a Schottky junction at the interface. The ideality factors (n) from ln(I)-V dependences were determined as 2.13, 1.96 and 2.07 for BLG/n-Si, BLG/TPA/n-Si and BLG/CAR/n-Si Schottky diodes, respectively. In addition, Schottky barrier height (SBH) and series resistance (Rs) of SAMs modified diodes were decreased compared to bare diode due to the formation of a compatible interface between graphene and Si as well as π-π interaction between aromatic SAMs and graphene. The CAR-based device exhibits better diode characteristic compared to the TPA-based device. Computational simulations show that the BLG/CAR system exhibits smaller energy-level-differences than the BLG/TPA, which supports the experimental findings of a lower Schottky barrier and series resistance in BLG/CAR diode.

Analysis of diodes used as precision power detectors above the square law region

DEFF Research Database (Denmark)

Guldbrandsen, Tom

1990-01-01

The deviation from square law found in diode power detectors at moderate power levels has been modeled for a general system consisting of a number of diode detectors connected to a common arbitrary linear passive network, containing an approximately sinusoidal source. This situation covers the case...... if an extra-set of measurements is made in situ. For precision measurements the maximum power level can be increased by about 10 dB. The dynamic range can thus be increased sufficiently to enable fast measurements to be made with an accuracy of 10-3 dB...

Silicon-CsI detector array for heavy-ion reactions

CERN Document Server

Norbeck, E; Pogodin, P I; Cheng, Y W; Ingram, F D; Bjarki, O; Grévy, S; Magestro, D J; Molen, A M V; Westfall, G D

2000-01-01

An array of 60 silicon-CsI(Tl) detector telescopes has been developed along with associated electronics. The close packing of the telescopes required novel designs for the photodiodes and the silicon DELTA E detectors. Newly developed electronics include preamplifiers, shaping amplifiers, test pulse circuitry, and a module to monitor leakage currents in the silicon diodes. The array covers angles from 5 deg. to 18 deg. in the 4 pi Array at the National Superconducting Cyclotron Laboratory at Michigan State University. It measures protons to 150 MeV and has isotopic resolution for intermediate mass nuclei.

Application of a diode-array detector in capillary electrophoresis

NARCIS (Netherlands)

Beck, W.; Hoek, van R.; Engelhardt, H.

1993-01-01

In the last decade diode-array detection has proved to be extremely useful in high performance liquid chromatography in recording UV-visible spectra directly and on-line in the column effluent. In capillary electrophoresis (CE) only fast-scanning detectors with long scan times (up to 2 s) are

Investigation of significantly high barrier height in Cu/GaN Schottky diode

Directory of Open Access Journals (Sweden)

Manjari Garg

2016-01-01

Full Text Available Current-voltage (I-V measurements combined with analytical calculations have been used to explain mechanisms for forward-bias current flow in Copper (Cu Schottky diodes fabricated on Gallium Nitride (GaN epitaxial films. An ideality factor of 1.7 was found at room temperature (RT, which indicated deviation from thermionic emission (TE mechanism for current flow in the Schottky diode. Instead the current transport was better explained using the thermionic field-emission (TFE mechanism. A high barrier height of 1.19 eV was obtained at room temperature. X-ray photoelectron spectroscopy (XPS was used to investigate the plausible reason for observing Schottky barrier height (SBH that is significantly higher than as predicted by the Schottky-Mott model for Cu/GaN diodes. XPS measurements revealed the presence of an ultrathin cuprous oxide (Cu2O layer at the interface between Cu and GaN. With Cu2O acting as a degenerate p-type semiconductor with high work function of 5.36 eV, a high barrier height of 1.19 eV is obtained for the Cu/Cu2O/GaN Schottky diode. Moreover, the ideality factor and barrier height were found to be temperature dependent, implying spatial inhomogeneity of barrier height at the metal semiconductor interface.

Ultraviolet light-absorbing and emitting diodes consisting of a p-type transparent-semiconducting NiO film deposited on an n-type GaN homoepitaxial layer

Science.gov (United States)

Nakai, Hiroshi; Sugiyama, Mutsumi; Chichibu, Shigefusa F.

2017-05-01

Gallium nitride (GaN) and related (Al,Ga,In)N alloys provide practical benefits in the production of light-emitting diodes (LEDs) and laser diodes operating in ultraviolet (UV) to green wavelength regions. However, obtaining low resistivity p-type AlN or AlGaN of large bandgap energies (Eg) is a critical issue in fabricating UV and deep UV-LEDs. NiO is a promising candidate for useful p-type transparent-semiconducting films because its Eg is 4.0 eV and it can be doped into p-type conductivity of sufficiently low resistivity. By using these technologies, heterogeneous junction diodes consisting of a p-type transparent-semiconducting polycrystalline NiO film on an n-type single crystalline GaN epilayer on a low threading-dislocation density, free-standing GaN substrate were fabricated. The NiO film was deposited by using the conventional RF-sputtering method, and the GaN homoepitaxial layer was grown by metalorganic vapor phase epitaxy. They exhibited a significant photovoltaic effect under UV light and also exhibited an electroluminescence peak at 3.26 eV under forward-biased conditions. From the conduction and valence band (EV) discontinuities, the NiO/GaN heterointerface is assigned to form a staggered-type (TYPE-II) band alignment with the EV of NiO higher by 2.0 eV than that of GaN. A rectifying property that is consistent with the proposed band diagram was observed in the current-voltage characteristics. These results indicate that polycrystalline NiO functions as a hole-extracting and injecting layer of UV optoelectronic devices.

Natural gas pipeline leak detector based on NIR diode laser absorption spectroscopy.

Science.gov (United States)

Gao, Xiaoming; Fan, Hong; Huang, Teng; Wang, Xia; Bao, Jian; Li, Xiaoyun; Huang, Wei; Zhang, Weijun

2006-09-01

The paper reports on the development of an integrated natural gas pipeline leak detector based on diode laser absorption spectroscopy. The detector transmits a 1.653 microm DFB diode laser with 10 mW and detects a fraction of the backscatter reflected from the topographic targets. To eliminate the effect of topographic scatter targets, a ratio detection technique was used. Wavelength modulation and harmonic detection were used to improve the detection sensitivity. The experimental detection limit is 50 ppmm, remote detection for a distance up to 20 m away topographic scatter target is demonstrated. Using a known simulative leak pipe, minimum detectable pipe leak flux is less than 10 ml/min.

Design, fabrication and characterization of multi-guard-ring furnished p+n-n+ silicon strip detectors for future HEP experiments

Science.gov (United States)

Lalwani, Kavita; Jain, Geetika; Dalal, Ranjeet; Ranjan, Kirti; Bhardwaj, Ashutosh

2016-07-01

Si detectors, in various configurations (strips and pixels), have been playing a key role in High Energy Physics (HEP) experiments due to their excellent vertexing and high precision tracking information. In future HEP experiments like upgrade of the Compact Muon Solenoid experiment (CMS) at the Large Hadron Collider (LHC), CERN and the proposed International Linear Collider (ILC), the Si tracking detectors will be operated in a very harsh radiation environment, which leads to both surface and bulk damage in Si detectors which in turn changes their electrical properties, i.e. change in the full depletion voltage, increase in the leakage current and decrease in the charge collection efficiency. In order to achieve the long term durability of Si-detectors in future HEP experiments, it is required to operate these detectors at very high reverse biases, beyond the full depletion voltage, thus requiring higher detector breakdown voltage. Delhi University (DU) is involved in the design, fabrication and characterization of multi-guard-ring furnished ac-coupled, single sided, p+n-n+ Si strip detectors for future HEP experiments. The design has been optimized using a two-dimensional numerical device simulation program (TCAD-Silvaco). The Si strip detectors are fabricated with eight-layers mask process using the planar fabrication technology by Bharat Electronic Lab (BEL), India. Further an electrical characterization set-up is established at DU to ensure the quality performance of fabricated Si strip detectors and test structures. In this work measurement results on non irradiated Si Strip detectors and test structures with multi-guard-rings using Current Voltage (IV) and Capacitance Voltage (CV) characterization set-ups are discussed. The effect of various design parameters, for example guard-ring spacing, number of guard-rings and metal overhang on breakdown voltage of test structures have been studied.

Enhancement of the Si p-n diode NIR photoresponse by embedding β-FeSi2 nanocrystallites.

Science.gov (United States)

Shevlyagin, A V; Goroshko, D L; Chusovitin, E A; Galkin, K N; Galkin, N G; Gutakovskii, A K

2015-10-05

By using solid phase epitaxy of thin Fe films and molecular beam epitaxy of Si, a p(+)-Si/p-Si/β-FeSi2 nanocrystallites/n-Si(111) diode structure was fabricated. Transmission electron microscopy data confirmed a well-defined multilayered structure with embedded nanocrystallites of two typical sizes: 3-4 and 15-20 nm, and almost coherent epitaxy of the nanocrystallites with the Si matrix. The diode at zero bias conditions exhibited a current responsivity of 1.7 mA/W, an external quantum efficiency of about 0.2%, and a specific detectivity of 1.2 × 10(9) cm × Hz(1/2)/W at a wavelength of 1300 nm at room temperature. In the avalanche mode, the responsivity reached up to 20 mA/W (2% in terms of efficiency) with a value of avalanche gain equal to 5. The data obtained indicate that embedding of β-FeSi2 nanocrystallites into the depletion region of the Si p-n junction results in expansion of the spectral sensitivity up to 1600 nm and an increase of the photoresponse by more than two orders of magnitude in comparison with a conventional Si p-n junction. Thereby, fabricated structure combines advantage of the silicon photodiode functionality and simplicity with near infrared light detection capability of β-FeSi2.

Flat-response x-ray-diode-detector development

International Nuclear Information System (INIS)

Tirsell, G.

1982-10-01

In this report we discuss the design of an improved sub-nanosecond flat response x-ray diode detector needed for ICF diagnostics. This device consists of a high Z cathode and a complex filter tailored to flatten the response so that the total x-ray energy below 1.5 keV can be measured using a single detector. Three major problems have become evident as a result of our work with the original LLNL design including deviation from flatness due to a peak in the response below 200 eV, saturation at relatively low x-ray fluences, and long term gold cathode instability. We are investigating grazing incidence reflection to reduce the response below 200 eV, new high Z cathode materials for long term stability, and a new complex filter for improved flatness. Better saturation performance will require a modified XRD detector under development with reduced anode to cathode spacing and increased anode bias voltage

Admittance studies of neutron-irradiated silicon p+-n diodes

International Nuclear Information System (INIS)

Tokuda, Y.; Usami, A.

1977-01-01

Defects introduced in n-type silicon by neutron irradiation were investigated by measuring the conductance (G) and the capacitance (C) of p + -n diodes. The method of the determination of the energy level, capture cross section, and concentration for each defect from the G-T and C-T curves for various frequencies was presented. Assuming that capture cross sections are independent of temperature, the energy levels of E/sub c/-0.15 eV, E/sub c/-0.22 eV, and E/sub c/-0.39 eV were obtained. For these defects, the calculated values of the electron capture cross section were 2.6 x 10 -14 , 3.7 x 10 -15 , and 2.0 x 10 -14 cm 2 , respectively. The introduction rate of defects for E/sub c/-0.39 eV was twice that for E/sub c/-0.22 eV which was twice that for E/sub c/-0.15 eV. Comparing with other published data, the energy levels of E/sub c/-0.15 eV and E/sub c/-0.39 eV were found to be correlated with the A center and the divacancy, respectively

Detection of 14 MeV neutrons in high temperature environment up to 500 deg. C using 4H-SiC based diode detector

Energy Technology Data Exchange (ETDEWEB)

Szalkai, D.; Klix, A. [KIT- Karlsruhe Institute of Technology, Institute of Neutron Physics and Reactor Technology Karlsruhe 76344 (Germany); Ferone, R.; Issa, F.; Ottaviani, L.; Vervisch, V. [IM2NP, UMR CNRS 7334, Aix-Marseille University, Case 231 -13397 Marseille Cedex 20 (France); Gehre, D. [Inst. for Nucl.- and Particle-Phys., Dresden University of Technology, Dresden 01069 (Germany); Lyoussi, A. [CEA, DEN, Departement d' Etudes des Reacteurs, Service de Physique Experimentale, Laboratoire Dosimetrie Capteurs Instrumentation, 13108 Saint-Paul-lez-Durance (France)

2015-07-01

In reactor technology and industrial applications detection of fast and thermal neutrons plays a crucial role in getting relevant information about the reactor environment and neutron yield. The inevitable elevated temperatures make neutron yield measurements problematic. Out of the currently available semiconductors 4H-SiC seems to be the most suitable neutron detector material under extreme conditions due to its high heat and radiation resistance, large band-gap and lower cost of production than in case of competing diamond detectors. In the framework of the European I-Smart project, optimal {sup 4}H-SiC diode geometries were developed for high temperature neutron detection and have been tested with 14 MeV fast neutrons supplied by a deuterium-tritium neutron generator with an average neutron flux of 10{sup 10}-10{sup 11} n/(s*cm{sup 2}) at Neutron Laboratory of the Technical University of Dresden in Germany from room temperatures up to several hundred degrees Celsius. Based on the results of the diode measurements, detector geometries appear to play a crucial role for high temperature measurements up to 500 deg. C. Experimental set-ups using SiC detectors were constructed to simulate operation in the harsh environmental conditions found in the tritium breeding blanket of the ITER fusion reactor, which is planned to be the location of neutron flux characterization measurements in the near future. (authors)

Radiation Effects of n-type, Low Resistivity, Spiral Silicon Drift Detector Hybrid Systems

International Nuclear Information System (INIS)

Chen, W.; De Geronimo, G.; Carini, G.A.; Gaskin, J.A.; Keister, J.W.; Li, S.; Li, Z.; Ramsey, B.D.; Siddons, D.P.; Smith, G.C.; Verbitskaya, E.

2011-01-01

We have developed a new thin-window, n-type, low-resistivity, spiral silicon drift detector (SDD) array - to be used as an extraterrestrial X-ray spectrometer (in varying environments) for NASA. To achieve low-energy response, a thin SDD entrance window was produced using a previously developed method. These thin-window devices were also produced on lower resistivity, thinner, n-type, silicon material, effectively ensuring their radiation hardness in anticipation of operation in potentially harsh radiation environments (such as found around the Jupiter system). Using the Indiana University Cyclotron Facility beam line RERS1, we irradiated a set of suitable diodes up to 5 Mrad and the latest iteration of our ASICs up to 12 Mrad. Then we irradiated two hybrid detectors consisting of newly, such-produced in-house (BNL) SDD chips bonded with ASICs with doses of 0.25 Mrad and 1 Mrad. Also we irradiated another hybrid detector consisting of previously produced (by KETEK) on n-type, high-resistivity SDD chip bonded with BNL's ASICs with a dose of 1 Mrad. The measurement results of radiated diodes (up to 5 Mrad), ASICs (up to 12 Mrad) and hybrid detectors (up to 1 Mrad) are presented here.

Factors affecting the energy resolution in alpha particle spectrometry with silicon diodes

International Nuclear Information System (INIS)

Camargo, Fabio de.

2005-01-01

In this work are presented the studies about the response of a multi-structure guard rings silicon diode for detection and spectrometry of alpha particles. This ion-implanted diode (Al/p + /n/n + /Al) was processed out of 300 μm thick, n type substrate with a resistivity of 3 kΩ·cm and an active area of 4 mm 2 . In order to use this diode as a detector, the bias voltage was applied on the n + side, the first guard ring was grounded and the electrical signals were readout from the p + side. These signals were directly sent to a tailor made preamplifier, based on the hybrid circuit A250 (Amptek), followed by a conventional nuclear electronic. The results obtained with this system for the direct detection of alpha particles from 241 Am showed an excellent response stability with a high detection efficiency (≅ 100 %). The performance of this diode for alpha particle spectrometry was studied and it was prioritized the influence of the polarization voltage, the electronic noise, the temperature and the source-diode distance on the energy resolution. The results showed that the major contribution for the deterioration of this parameter is due to the diode dead layer thickness (1 μm). However, even at room temperature, the energy resolution (FWHM = 18.8 keV) measured for the 5485.6 MeV alpha particles ( 241 Am) is comparable to those obtained with ordinary silicon barrier detectors frequently used for these particles spectrometry. (author)

Trap-mediated electronic transport properties of gate-tunable pentacene/MoS2 p-n heterojunction diodes.

Science.gov (United States)

Kim, Jae-Keun; Cho, Kyungjune; Kim, Tae-Young; Pak, Jinsu; Jang, Jingon; Song, Younggul; Kim, Youngrok; Choi, Barbara Yuri; Chung, Seungjun; Hong, Woong-Ki; Lee, Takhee

2016-11-10

We investigated the trap-mediated electronic transport properties of pentacene/molybdenum disulphide (MoS 2 ) p-n heterojunction devices. We observed that the hybrid p-n heterojunctions were gate-tunable and were strongly affected by trap-assisted tunnelling through the van der Waals gap at the heterojunction interfaces between MoS 2 and pentacene. The pentacene/MoS 2 p-n heterojunction diodes had gate-tunable high ideality factor, which resulted from trap-mediated conduction nature of devices. From the temperature-variable current-voltage measurement, a space-charge-limited conduction and a variable range hopping conduction at a low temperature were suggested as the gate-tunable charge transport characteristics of these hybrid p-n heterojunctions. Our study provides a better understanding of the trap-mediated electronic transport properties in organic/2-dimensional material hybrid heterojunction devices.

Analytic formalism for current crowding in light emitting diodes

International Nuclear Information System (INIS)

Lee, Kyu-Seok

2012-01-01

This paper presents an analytic approach to simulating current crowding (CC) in light-emitting diodes with parallel p- and n-contacts. The electrical potential difference across the p-i-n layers is derived from the Laplace equation, whereas the current density through the p-i-n layers is obtained from the current density - voltage relation of a single-diode model. Since these two properties influence each other, they are calculated iteratively. It is found that CC depends on the applied voltage (or the average current density), the sheet resistances of the p- and the n-contact layers, the width of the active region, and the specific series resistance and ideality factor of the p-i-n layers. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Inhomogeneous barrier height effect on the current–voltage characteristics of an Au/n-InP Schottky diode

International Nuclear Information System (INIS)

Zeghdar, Kamal; Dehimi, Lakhdar; Saadoune, Achour; Sengouga, Nouredine

2015-01-01

We report the current–voltage (I–V) characteristics of the Schottky diode (Au/n-InP) as a function of temperature. The SILVACO-TCAD numerical simulator is used to calculate the I–V characteristic in the temperature range of 280–400 K. This is to study the effect of temperature on the I–V curves and assess the main parameters that characterize the Schottky diode such as the ideality factor, the height of the barrier and the series resistance. The I–V characteristics are analyzed on the basis of standard thermionic emission (TE) theory and the inhomogeneous barrier heights (BHs) assuming a Gaussian distribution. It is shown that the ideality factor decreases while the barrier height increases with increasing temperature, on the basis of TE theory. Furthermore, the homogeneous BH value of approximately 0.524 eV for the device has been obtained from the linear relationship between the temperature-dependent experimentally effective BHs and ideality factors. The modified Richardson plot, according to the inhomogeneity of the BHs, has a good linearity over the temperature range. The evaluated Richardson constant A * was 10.32 A·cm −2 ·K −2 , which is close to the theoretical value of 9.4 A·cm −2 ·K −2 for n-InP. The temperature dependence of the I–V characteristics of the Au/n-InP Schottky diode have been successfully explained on the basis of the thermionic emission (TE) mechanism with a Gaussian distribution of the Schottky barrier heights (SBHs). Simulated I–V characteristics are in good agreement with the measurements [Korucu D, Mammadov T S. J Optoelectronics Advanced Materials, 2012, 14: 41]. The barrier height obtained using Gaussian Schottky barrier distribution is 0.52 eV, which is about half the band gap of InP. (paper)

The two sides of silicon detectors

International Nuclear Information System (INIS)

Devine, S.R.

2001-10-01

Results are presented on in situ irradiation of silicon detector's at cryogenic temperature. The results show that irradiation at cryogenic temperatures does not detrimentally effect a silicon detectors performance when compared to its irradiation at room temperature. Operation of silicon devices at cryogenic temperatures offers the advantage of reducing radiation-induced leakage current to levels of a few pA, while at 130K the Lazarus Effect plays an important role i.e. minimum voltage required for full depletion. Performing voltage scans on a 'standard' silicon pad detector pre- and post annealing, the charge collection efficiency was found to be 60% at 200V and 95% at 200V respectively. Time dependence measurements are presented, showing that for a dose of 6.5x10 14 p/cm 2 (450GeV protons) the time dependence of the charge collection efficiency is negligible. However, for higher doses, 1.2x10 15 p/cm 2 , the charge collection efficiency drops from an initial measured value of 67% to a stable value of 58% over a period of 15 minutes for reversed biased diodes. An analysis of the 'double junction' effect is also presented. A comparison between the Transient Current Technique and an X-ray technique is presented. The double junction has been observed in p + /n/n + silicon detectors after irradiation beyond 'type inversion', corresponding to a fluence equivalent to ∼3x10 13 cm -2 1MeV neutrons, producing p + /p/n + and essentially two p-n junctions within one device. With increasing bias voltage, as the electric field is extending into the detector bulk from opposite sides of the silicon detector, there are two distinct depletion regions that collect charge signal independently. Summing the signal charge from the two regions, one is able to reconstruct the initial energy of the incident particle. From Transient Current measurements it is apparent that E-field manipulation is possible by excess carrier injection, enabling a high enough E-field to extend across the

Low-temperature current-voltage characteristics of MIS Cu/n-GaAs and inhomogeneous Cu/n-GaAs Schottky diodes

Energy Technology Data Exchange (ETDEWEB)

Biber, M

2003-01-01

The current-voltage (I-V) characteristics of metal-insulating layer-semiconductor Cu/n-GaAs and inhomogeneous Cu/n-GaAs Schottky barrier diodes were determined in the temperature range 80-300 K. The evaluation of the experimental I-V data reveals a nonlinear increase of the zero-bias barrier height (qPHI{sub 0}) for the inhomogeneous Cu/n-GaAs Schottky barrier diodes and a linear increase of the zero-bias barrier height (qPHI{sub 0}) for Cu/n-GaAs Schottky barrier diodes with an interfacial layer. The ideality factor n decreases with increasing temperature for all diodes. Furthermore, the changes in PHI{sub 0} and n become quite significant below 150 K and the plot of ln(I{sub 0}/T{sup 2}) versus 1/T exhibits a non-linearity below 180 K for the inhomogeneous barrier diodes. Such behavior is attributed to barrier inhomogeneities by assuming a Gaussian distribution of barrier heights at the interface. The value of the Richardson constant was found to be 5.033 A/cm{sup 2} K{sup 2}, which is close to the theoretical value of 8.16 A/cm{sup 2} K{sup 2} used for the determination of the zero-bias barrier height.

A study on dose attenuation in bone density when TBI using diode detector and TLD

International Nuclear Information System (INIS)

Im, Hyun Sil; Lee, Jung Jin; Jang, Ahn Ki; KIm, Wan Sun

2003-01-01

Uniform dose distribution of the whole body is essential factor for the total body irradiation(TBI). In order to achieved this goal, we used to compensation filter to compensate body contour irregularity and thickness differences. But we can not compensate components of body, namely lung or bone. The purpose of this study is evaluation of dose attenuation in bone tissue when TBI using diode detectors and TLD system. The object of this study were 5 patients who undergo TBI at our hospital. Dosimetry system were diode detectors and TLD system. Treatment method was bilateral and delivered 10 MV X-ray from linear accelerator. Measurement points were head, neck, pelvis, knees and ankles. TLD used two patients and diode detectors used three patients. Results are as followed. All measured dose value were normalized skin dose. TLD dosimetry : Measured skin dose of head, neck, pelvis, knees and ankles were 92.78±3.3, 104.34±2.3, 98.03±1.4, 99.9±2.53, 98.17±0.56 respectably. Measured mid-depth dose of pelvis, knees and ankles were 86±1.82, 93.24±2.53, 91.50±2.84 respectably. There were 6.67%-11.65% dose attenuation at mid-depth in pelvis, knees and ankles. Diode detector : Measured skin dose of head, neck, pelvis, knees and ankles were 95.23±1.18, 98.33±0.6, 93.5±1.5, 87.3±1.5, 86.90±1.16 respectably. There were 4.53%-12.6% dose attenuation at mid-depth in pelvis, knees and ankles. We concluded that dose measurement with TLD or diode detector was inevitable when TBI treatment. Considered dose attenuation in bone tissue, We must have adequately deduction of compensator thickness that body portion involved bone tissue.

Study of the reaction {sup 22}O(p,p') with MUST detector. Development of the Cs(Tl) part of MUST-2 detector; Etude de la reaction {sup 22}O(p,p') avec le detecteur MUST. Developpement de l'etage CsI(Tl) de l'ensemble MUST 2

Energy Technology Data Exchange (ETDEWEB)

Becheva, E

2004-11-01

Elastic and inelastic proton scattering on the unstable nuclei {sup 22}O was measured in inverse kinematics at the GANIL facility. A secondary beam of {sup 22}O at 46.6 MeV/A with intensity of {approx} 1000 pps, impinged on a (CH{sub 2}){sub n} target. Recoiling protons were detected in the silicon strip array MUST. We measured the angular distributions of the ground and 2{sub 1}{sup +} states of {sup 22}O. Phenomenological and microscopic analysis of the data were performed. The phenomenological analysis using a global potential parameterization of Becchetti and Greenlees and CH89 yields a value of the deformation parameter {beta}{sub p,p}, = 0.23{+-}0.04 for {sup 22}O, much lower than that of {sup 20}O. The ratio of neutron and proton matrix element M{sub n}/M{sub p} is found equal to 1.46{+-}0.50. The microscopic analysis used of densities and transition densities calculated within HFB and QRPA models respectively. Optical potential were obtained through both folding and JLM procedures. A ratio M{sub n}/M{sub p}=2.5{+-}1.0 is deduced. Contrary of {sup 20}O, {sup 22}O behaviours like a doubly magic nucleus, suggesting a pronounced sub-shell closure at N=14. To develop the study of direct reactions induced by radioactive beams, we have developed and built, a new multi-detector MUST II devoted to light charged particle detection. In this work we established the requirements for the CsI(Tl) detector stage, and test four CsI detector prototypes, constructed by the SCIONIX company. (author)

SU-F-T-490: Separating Effects Influencing Detector Response in Small MV Photon Fields

Energy Technology Data Exchange (ETDEWEB)

Wegener, S; Sauer, O [University of Wuerzburg, Wuerzburg (Germany)

2016-06-15

Purpose: Different detector properties influence their responses especially in field sizes below the lateral electron range. Due to the finite active volume, the detector density and electron perturbation at other structural parts, the response factor is in general field size dependent. We aimed to visualize and separate the main effects contributing to detector behavior for a variety of detector types. This was achieved in an experimental setup, shielding the field center. Thus, effects caused by scattered radiation could be examined separately. Methods: Signal ratios for field sizes down to 8 mm (SSD 90 cm, water depth 10 cm) of a 6MV beam from a Siemens Primus LINAC were recorded with several detectors: PTW microDiamond and PinPoint ionization chamber, shielded diodes (PTW P-60008, IBA PFD and SNC Edge) and unshielded diodes (PTW E-60012 and IBA SFD). Measurements were carried out in open fields and with an aluminum pole of 4 mm diameter as a central block. The geometric volume effect was calculated from profiles obtained with Gafchromic EBT3 film, evaluated using FilmQA Pro software (Ashland, USA). Results: Volume corrections were 1.7% at maximum. After correction, in small open fields, unshielded diodes showed a lower response than the diamond, i.e. diamond detector over-response seems to be higher than that for unshielded diodes. Beneath the block, this behavior was amplified by a factor of 2. For the shielded diodes, the overresponse for small open fields could be confirmed. However their lateral response behavior was strongly type dependent, e.g. the signal ratio dropped from 1.02 to 0.98 for the P-60008 diode. Conclusion: The lateral detector response was experimentally examined. Detector volume and density alone do not fully account for the field size dependence of detector response. Detector construction details play a major role, especially for shielded diodes.

The effect of incremental gamma-ray doses and incremental neutron fluences upon the performance of self-biased sup 1 sup 0 B-coated high-purity epitaxial GaAs thermal neutron detectors

CERN Document Server

Gersch, H K; Simpson, P A

2002-01-01

High-purity epitaxial GaAs sup 1 sup 0 B-coated thermal neutron detectors advantageously operate at room temperature without externally applied voltage. Sample detectors were systematically irradiated at fixed grid locations near the core of a 2 MW research reactor to determine their operational neutron dose threshold. Reactor pool locations were assigned so that fast and thermal neutron fluxes to the devices were similar. Neutron fluences ranged between 10 sup 1 sup 1 and 10 sup 1 sup 4 n/cm sup 2. GaAs detectors were exposed to exponential fluences of base ten. Ten detector designs were irradiated and studied, differentiated between p-i-n diodes and Schottky barrier diodes. The irradiated sup 1 sup 0 B-coated detectors were tested for neutron detection sensitivity in a thermalized neutron beam. Little damage was observed for detectors irradiated at neutron fluences of 10 sup 1 sup 2 n/cm sup 2 and below, but signals noticeably degraded at fluences of 10 sup 1 sup 3 n/cm sup 2. Catastrophic damage was appare...

Design, fabrication and characterization of an a-Si:H-based UV detector for sunburn applications

Science.gov (United States)

Bayat, Khadijeh; Vygranenko, Yuriy; Sazonov, Andrei; Farrokh-Baroughi, Mahdi

2006-12-01

A thin-film a-Si:H pin detector was developed for selective detection of UVA (320-400 nm) radiation. In order for the fabrication technology to be transferable onto flexible substrates, all of the processing steps were conducted at temperatures less than 125 °C. The measured saturation current as low as 2 pA cm-2 and the ideality factor of 1.47 show that the pin diodes have a good quality i-layer as well as p-i and n-i interfaces. The film thicknesses were optimized to suppress the detector sensitivity in the visible spectral range, and the peak of spectral response was observed at 410 nm. The selectivity estimated from the ratio of the photocurrent generated by UVA absorption to the total photocurrent is 21%.

Investigation of p-type depletion doping for InGaN/GaN-based light-emitting diodes

Science.gov (United States)

Zhang, Yiping; Zhang, Zi-Hui; Tan, Swee Tiam; Hernandez-Martinez, Pedro Ludwig; Zhu, Binbin; Lu, Shunpeng; Kang, Xue Jun; Sun, Xiao Wei; Demir, Hilmi Volkan

2017-01-01

Due to the limitation of the hole injection, p-type doping is essential to improve the performance of InGaN/GaN multiple quantum well light-emitting diodes (LEDs). In this work, we propose and show a depletion-region Mg-doping method. Here we systematically analyze the effectiveness of different Mg-doping profiles ranging from the electron blocking layer to the active region. Numerical computations show that the Mg-doping decreases the valence band barrier for holes and thus enhances the hole transportation. The proposed depletion-region Mg-doping approach also increases the barrier height for electrons, which leads to a reduced electron overflow, while increasing the hole concentration in the p-GaN layer. Experimentally measured external quantum efficiency indicates that Mg-doping position is vitally important. The doping in or adjacent to the quantum well degrades the LED performance due to Mg diffusion, increasing the corresponding nonradiative recombination, which is well supported by the measured carrier lifetimes. The experimental results are well numerically reproduced by modifying the nonradiative recombination lifetimes, which further validate the effectiveness of our approach.

Front-side biasing of n-in-p silicon strip detectors

CERN Document Server

Baselga Bacardit, Marta; Dierlamm, Alexander Hermann; Dragicevic, Marko Gerhart; Konig, Axel; Pree, Elias; Metzler, Marius

2018-01-01

Front-side biasing is an alternative method to bias a silicon sensor. Instead of directly applying high voltage to the back-side, one can exploit the conductive properties of the edge region to bias a detector exclusively via top-side connections. This option can be beneficial for the detector design and might help to facilitate the assembly process of modules. The effective bias voltage is affected by the resistance of the edge region and the sensor current. The measurements of n-in-p sensors performed to qualify this concept have shown that the voltage drop emerging from this resistance is negligible before irradiation. After irradiation, however, the resistivity of the edge region increases with fluence and saturates in the region of 10$^{7}\\,\\Omega$ at a fluence of 1$\\,\\cdot\\,10^{15}\\,$n$_{\\textrm{eq}}$cm$^{-2}$. The measurements are complemented by TCAD simulations and interpretations of the observed effects.

Investigation of the Electrical Characteristics of Al/p-Si/Al Schottky Diode

International Nuclear Information System (INIS)

Şenarslan, Elvan; Güzeldir, Betül; Sağlam, Mustafa

2016-01-01

In this study, p-type Si semiconductor wafer with (100) orientation, 400 μm thickness and 1-10 Ω cm resistivity was used. The Si wafer before making contacts were chemically cleaned with the Si cleaning procedure which for remove organic contaminations were ultrasonically cleaned at acetone and methanol for 10 min respectively and then rinsed in deionized water of 18 MΩ and dried with high purity N 2 . Then respectively RCA1(i.e., boiling in NH 3 +H 2 O 2 +6H 2 O for 10 min at 60°C ), RCA2 (i.e., boiling in HCl+H 2 O 2 +6H 2 O for 10 min at 60°C ) cleaning procedures were applied and rinsed in deionized water followed by drying with a stream of N 2 . After the cleaning process, the wafer is immediately inserted in to the coating unit. Ohmic contact was made by evaporating of Al on the non-polished side of the p-Si wafer pieces under ∼ 4,2 10 -6 Torr pressure. After process evaporation, p-Si with omic contac thermally annealed 580°C for 3 min in a quartz tube furnace in N 2 . Then, the rectifier contact is made by evaporation Al metal diameter of about 1.0 mm on the polished surface of p-Si in turbo molecular pump at about ∼ 1 10 -6 Torr. Consequently, Al/p-Si/Al Schottky diode was obtained. The I–V measurements of this diode performed by the use of a KEITLEY 487 Picoammeter/Voltage Source and the C–V measurements were performed with HP 4192A (50–13 MHz) LF Impedance Analyzer at room temperature and in dark. (paper)

Microscopic investigation of InGaN/GaN heterostructure laser diode degradation using Kelvin probe force microscopy

International Nuclear Information System (INIS)

Lochthofen, A; Mertin, W; Bacher, G; Furitsch, M; Bruederl, G; Strauss, U; Haerle, V

2008-01-01

We report on Kelvin probe force microscopy (KPFM) measurements on fresh and artificially aged InGaN/GaN laser test structures. In the case of an unbiased laser diode, a comparison of the surface potential between a fresh and a stressed laser diode shows a pronounced modification of the laser facet due to the aging process. Performing KPFM measurements under forward bias, a correlation between the macroscopic I-V characteristics and the microscopic voltage drop across the heterostructure layer sequence is found. This clearly demonstrates the potential of KPFM for investigating InGaN/GaN laser diode degradation

Silicon diodes as an alternative to diamond detectors for depth dose curves and profile measurements of photon and electron radiation

International Nuclear Information System (INIS)

Scherf, Christian; Moog, Jussi; Licher, Joerg; Kara, Eugen; Roedel, Claus; Ramm, Ulla; Peter, Christiane; Zink, Klemens

2009-01-01

Background: Depth dose curves and lateral dose profiles should correspond to relative dose to water in any measured point, what can be more or less satisfied with different detectors. Diamond as detector material has similar dosimetric properties like water. Silicon diodes and ionization chambers are also commonly used to acquire dose profiles. Material and Methods: The authors compared dose profiles measured in an MP3 water phantom with a diamond detector 60003, unshielded and shielded silicon diodes 60008 and 60012 and a 0.125-cm 3 thimble chamber 233642 (PTW, Freiburg, Germany) for 6- and 25-MV photons. Electron beams of 6, 12 and 18 MeV were investigated with the diamond detector, the unshielded diode and a Markus chamber 23343. Results: The unshielded diode revealed relative dose differences at the water surface below +10% for 6-MV and +4% for 25-MV photons compared to the diamond data. These values decreased to less than 1% within the first millimeters of water depth. The shielded diode was only required to obtain correct data of the fall-off zones for photon beams larger than 10 x 10 cm 2 because of important contributions of low-energy scattered photons. For electron radiation the largest relative dose difference of -2% was observed with the unshielded silicon diode for 6 MeV within the build-up zone. Spatial resolutions were always best with the small voluminous silicon diodes. Conclusion: Relative dose profiles obtained with the two silicon diodes have the same degree of accuracy as with the diamond detector. (orig.)

Silicon diodes as an alternative to diamond detectors for depth dose curves and profile measurements of photon and electron radiation.

Science.gov (United States)

Scherf, Christian; Peter, Christiane; Moog, Jussi; Licher, Jörg; Kara, Eugen; Zink, Klemens; Rödel, Claus; Ramm, Ulla

2009-08-01

Depth dose curves and lateral dose profiles should correspond to relative dose to water in any measured point, what can be more or less satisfied with different detectors. Diamond as detector material has similar dosimetric properties like water. Silicon diodes and ionization chambers are also commonly used to acquire dose profiles. The authors compared dose profiles measured in an MP3 water phantom with a diamond detector 60003, unshielded and shielded silicon diodes 60008 and 60012 and a 0.125-cm(3) thimble chamber 233642 (PTW, Freiburg, Germany) for 6- and 25-MV photons. Electron beams of 6, 12 and 18 MeV were investigated with the diamond detector, the unshielded diode and a Markus chamber 23343. The unshielded diode revealed relative dose differences at the water surface below +10% for 6-MV and +4% for 25-MV photons compared to the diamond data. These values decreased to less than 1% within the first millimeters of water depth. The shielded diode was only required to obtain correct data of the fall-off zones for photon beams larger than 10 x 10 cm(2) because of important contributions of low-energy scattered photons. For electron radiation the largest relative dose difference of -2% was observed with the unshielded silicon diode for 6 MeV within the build-up zone. Spatial resolutions were always best with the small voluminous silicon diodes. Relative dose profiles obtained with the two silicon diodes have the same degree of accuracy as with the diamond detector.

Studies of the dependence on oxidation thermal processes of effects on the electrical properties of silicon detectors by fast neutron radiation

International Nuclear Information System (INIS)

Li, Zheng; Kraner, H.W.

1991-11-01

High resistivity silicon detectors along with MOS capacitors made on five silicon dioxides with different thermal conditions (975 degree C to 1200 degree C) have been exposed to fast neutron irradiation up to the fluence of a few times 10 14 n/cm 2 . New measurement techniques such as capacitance-voltage (C-V) of MOS capacitors and current-voltage (I-V) of back to back diodes (p + -n - - p + if n - is not inverted to p) or resistors (p + -p-p + if inverted) have been introduced in this study in monitoring the possible type-inversion (n→p) under high neutron fluence. No type-inversion in the material underneath SiO 2 and the p + contact has been observed so far in this work for detectors made on the five oxides up to the neutron fluence of a few times 10 13 n/cm 2 . However, it has been found that detectors made on higher temperature oxides (T≤ 1100 degree C) exhibit less leakage current increase at high neutron fluence (φ ≤ 10 13 n/cm 2 )

Modeling of radiation damage recovery in particle detectors based on GaN

Energy Technology Data Exchange (ETDEWEB)

Gaubas, E., E-mail: eugenijus.gaubas@ff.vu.lt; Ceponis, T.; Pavlov, J.

2015-12-15

The pulsed characteristics of the capacitor-type and PIN diode type detectors based on GaN have been simulated using the dynamic and drift–diffusion models. The drift–diffusion current simulations have been implemented by employing the commercial software package Synopsys TCAD Sentaurus. The bipolar drift regime has been analyzed. The possible internal gain in charge collection through carrier multiplication processes determined by impact ionization has been considered in order to compensate carrier lifetime reduction due to radiation defects introduced into GaN material of detector.

Radiation effects on the current-voltage and capacitance-voltage characteristics of advanced p-n junction diodes surrounded by shallow trench isolation

International Nuclear Information System (INIS)

Poyai, A.; Simoen, E.; Claeys, C.; Hayama, K.; Kobayashi, K.; Ohyama, H.

2002-01-01

This paper investigates the impact of 20 MeV proton irradiation on the current-voltage (I-V) and capacitance-voltage (C-V) characteristics of different geometry n + -p-well junction diodes surrounded by shallow trench isolation and processed in a 0.18 μm CMOS technology. From I-V characteristics, a higher current damage coefficient was found for the bulk than for the peripheral component. The radiation-induced boron de-activation resulted in a lowering of the p-well doping, which has been derived from high-frequency C-V measurements. This was confirmed by deep level transient spectroscopy (DLTS) analysis, revealing the presence of interstitial boron related radiation defects. As will be demonstrated for the bulk leakage-current damage coefficient, the electric field enhanced generation rate of charge carriers and the radiation-induced boron de-activation should be accounted for properly

Amorphous silicon pixel radiation detectors and associated thin film transistor electronics readout

International Nuclear Information System (INIS)

Perez-Mendez, V.; Cho, G.; Drewery, J.; Jing, T.; Kaplan, S.N.; Mireshghi, A.; Wildermuth, D.; Goodman, C.; Fujieda, I.

1992-07-01

We describe the characteristics of thin (1 μm) and thick (> 30 μm) hydrogenated amorphous silicon p-i-n diodes which are optimized for detecting and recording the spatial distribution of charged particles, x-ray, γ rays and thermal neutrons. For x-ray, γ ray, and charged particle detection we can use thin p-i-n photosensitive diode arrays coupled to evaporated layers of suitable scintillators. For thermal neutron detection we use thin (2∼5 μm) gadolinium converters on 30 μm thick a-Si:H diodes. For direct detection of minimum ionizing particles and others with high resistance to radiation damage, we use the thick p-i-n diode arrays. Diode and amorphous silicon readouts as well as polysilicon pixel amplifiers are described

CCE measurements and annealing studies on proton-irradiated p-type MCz silicon diodes

CERN Document Server

Hoedlmoser, H; Köhler, M; Nordlund, H

2007-01-01

Magnetic Czochralski (MCz) silicon has recently been investigated for the development of radiation tolerant detectors for future high-luminosity HEP experiments. A study of p-type MCz Silicon diodes irradiated with protons up to a fluence of has been performed by means of Charge Collection Efficiency (CCE) measurements as well as standard CV/IV characterizations. The changes of CCE, full depletion voltage and leakage current as a function of fluence are reported. A subsequent annealing study of the irradiated detectors shows an increase in effective doping concentration and a decrease in the leakage current, whereas the CCE remains basically unchanged. Two different series of detectors have been compared differing in the implantation dose of p-spray isolation as well as effective doping concentration (Neff) of the p-type bulk presumably due to a difference in thermal donor (TD) activation during processing. The series with the higher concentration of TDs shows a delayed reverse annealing of Neff after irradia...

Shot-Noise-Limited Dual-Beam Detector for Atmospheric Trace-Gas Monitoring with Near-Infrared Diode Lasers

Science.gov (United States)

Durry, Georges; Pouchet, Ivan; Amarouche, Nadir; Danguy, Théodore; Megie, Gerard

2000-10-01

A dual-beam detector is used to measure atmospheric trace species by differential absorption spectroscopy with commercial near-infrared InGaAs laser diodes. It is implemented on the Spectrom tre Diodes Laser Accordables, a balloonborne tunable diode laser spectrometer devoted to the in situ monitoring of CH 4 and H 2 O. The dual-beam detector is made of simple analogical subtractor circuits combined with InGaAs photodiodes. The detection strategy consists in taking the balanced analogical difference between the reference and the sample signals detected at the input and the output of an open optical multipass cell to apply the full dynamic range of the measurements (16 digits) to the weak molecular absorption information. The obtained sensitivity approaches the shot-noise limit. With a 56-m optical cell, the detection limit obtained when the spectra is recorded within 8 ms is 10 4 (expressed in absorbance units). The design and performances of both a simple substractor and an upgraded feedback substractor circuit are discussed with regard to atmospheric in situ CH 4 absorption spectra measured in the 1.653- m region. Mixing ratios are obtained from the absorption spectra by application of a nonlinear least-squares fit to the full molecular line shape in conjunction with in situ P and T measurements.

Influence of basal-plane dislocation structures on expansion of single Shockley-type stacking faults in forward-current degradation of 4H-SiC p-i-n diodes

Science.gov (United States)

Hayashi, Shohei; Yamashita, Tamotsu; Senzaki, Junji; Miyazato, Masaki; Ryo, Mina; Miyajima, Masaaki; Kato, Tomohisa; Yonezawa, Yoshiyuki; Kojima, Kazutoshi; Okumura, Hajime

2018-04-01

The origin of expanded single Shockley-type stacking faults in forward-current degradation of 4H-SiC p-i-n diodes was investigated by the stress-current test. At a stress-current density lower than 25 A cm-2, triangular stacking faults were formed from basal-plane dislocations in the epitaxial layer. At a stress-current density higher than 350 A cm-2, both triangular and long-zone-shaped stacking faults were formed from basal-plane dislocations that converted into threading edge dislocations near the interface between the epitaxial layer and the substrate. In addition, the conversion depth of basal-plane dislocations that expanded into the stacking fault was inside the substrate deeper than the interface. These results indicate that the conversion depth of basal-plane dislocations strongly affects the threshold stress-current density at which the expansion of stacking faults occurs.

Effect of annealing temperature on electrical properties of Au/polyvinyl alcohol/n-InP Schottky barrier structure

International Nuclear Information System (INIS)

Reddy, V. Rajagopal; Reddy, M. Siva Pratap; Kumar, A. Ashok; Choi, Chel-Jong

2012-01-01

In the present work, thin film of polyvinyl alcohol (PVA) is fabricated on n-type InP substrate as an interfacial layer for electronic modification of Au/n-InP Schottky contact. The electrical characteristics of Au/PVA/n-InP Schottky diode are determined at annealing temperature in the range of 100–300 °C by current–voltage (I-V) and capacitance–voltage (C-V) methods. The Schottky barrier height and ideality factor (n) values of the as-deposited Au/PVA/n-InP diode are obtained at room temperature as 0.66 eV (I-V), 0.82 eV (C-V) and 1.32, respectively. Upon annealing at 200 °C in nitrogen atmosphere for 1 min, the barrier height value increases to 0.81 eV (I-V), 0.99 eV (C-V) and ideality factor decreases to 1.18. When the contact is annealed at 300 °C, the barrier height value decreases to 0.77 eV (I-V), 0.96 eV (C-V) and ideality factor increases to 1.22. It is observed that the interfacial layer of PVA increases the barrier height by the influence of the space charge region of the Au/n-InP Schottky junction. The discrepancy between Schottky barrier heights calculated from I-V and C-V measurements is also explained. Further, Cheung's functions are used to extract the series resistance of Au/PVA/n-InP Schottky diode. The interface state density as determined by Terman's method is found to be 1.04 × 10 12 and 0.59 × 10 12 cm −2 eV −1 for the as-deposited and 200 °C annealed Au/PVA/n-InP Schottky diodes. Finally, it is seen that the Schottky diode parameters changed with increase in the annealing temperature. - Highlights: ► Electrical properties of Au/polyvinyl alcohol (PVA)/n-InP structure have been studied. ► The Au/PVA/n-InP Schottky structure showed a good rectifying behavior. ► A maximum barrier height is obtained when the contact is annealed at 200 °C. ► Interface state density found to be 0.59 × 10 12 cm −2 eV −1 for 200 °C annealed contact. ► Significant effect of interface state density and series resistance on electrical

Electrical properties of Au/perylene-monoimide/p-Si Schottky diode

International Nuclear Information System (INIS)

Yüksel, Ö.F.; Tuğluoğlu, N.; Gülveren, B.; Şafak, H.; Kuş, M.

2013-01-01

Graphical abstract: In this work, we have fabricated an Au/perylene-monoimide (PMI)/p-Si Schottky barrier diode. An emphasis is placed on how electrical and interface characteristics like current–voltage (I–V) variation, ideality factor (n), barrier height (Φ B ) and series resistance (R s ) of Au/PMI/p-Si diode structure change with the temperatures between 100 and 300 K. The temperature dependence of barrier height shows that the Schottky barrier height is inhomogeneous in nature at the interface. Such inhomogeneous behavior was explained on the basis of thermionic emission mechanism by assuming the existence of a Gaussian distribution of barrier heights. -- Highlights: •An Au/perylene-monoimide (PMI)/p-Si Schottky diode having an organic interlayer has been fabricated. •I–V characteristics have been investigated over a wide temperature range 100–300 K. •C–V measurements have been analyzed at room temperature. -- Abstract: In this work, we have fabricated an Au/perylene-monoimide (PMI)/p-Si Schottky barrier diode. We have investigated how electrical and interface characteristics like current–voltage characteristics (I–V), ideality factor (n), barrier height (Φ B ) and series resistance (R s ) of diode change with temperature over a wide range of 100–300 K. Detailed analysis on the electrical properties of structure is performed by assuming the standard thermionic emission (TE) model. Possible mechanisms such as image force lowering, generation–recombination processes and interface states which cause deviations of n values from the unity have been discussed. Cheung–Cheung method is also employed to analysis the current–voltage characteristics and a good agreement is observed between the results. It is shown that the electronic properties of Schottky diode are very sensitive to the modification of perylene-monoimide (PMI) interlayer organic material and also to the temperature. The ideality factor was found to decrease and the barrier

Testing digital recursive filtering method for radiation measurement channel using pin diode detector

International Nuclear Information System (INIS)

Talpalariu, C. M.; Talpalariu, J.; Popescu, O.; Mocanasu, M.; Lita, I.; Visan, D. A.

2016-01-01

In this work we have studied a software filtering method implemented in a pulse counting computerized measuring channel using PIN diode radiation detector. In case our interest was focalized for low rate decay radiation measurement accuracies improvement and response time optimization. During works for digital mathematical algorithm development, we used a hardware radiation measurement channel configuration based on PIN diode BPW34 detector, preamplifier, filter and programmable counter, computer connected. We report measurement results using two digital recursive methods in statically and dynamically field evolution. Software for graphical input/output real time diagram representation was designed and implemented, facilitating performances evaluation between the response of fixed configuration software recursive filter and dynamically adaptive configuration recursive filter. (authors)

Optical characterization of magnesium incorporation in p-GaN layers for core–shell nanorod light-emitting diodes

Science.gov (United States)

Gîrgel, I.; Šatka, A.; Priesol, J.; Coulon, P.-M.; Le Boulbar, E. D.; Batten, T.; Allsopp, D. W. E.; Shields, P. A.

2018-04-01

III-nitride nanostructures are of interest for a new generation of light-emitting diodes (LEDs). However, the characterization of doping incorporation in nanorod (NR) structures, which is essential for creating the p-n junction diodes, is extremely challenging. This is because the established electrical measurement techniques (such as capacitance–voltage or Hall-effect methods) require a simple sample geometry and reliable ohmic contacts, both of which are difficult to achieve in nanoscale devices. The need for homogenous, conformal n-type or p-type layers in core–shell nanostructures magnifies these challenges. Consequently, we demonstrate how a combination of non-contact methods (micro-photoluminescence, micro-Raman and cathodoluminescence), as well as electron-beam-induced-current, can be used to analyze the uniformity of magnesium incorporation in core–shell NRs and make a first estimate of doping levels by the evolution of band transitions, strain and current mapping. These techniques have been used to optimize the growth of core–shell nanostructures for electrical carrier injection, a significant milestone for their use in LEDs.

White electroluminescence from ZnO nanorods/p-GaN heterojunction light-emitting diodes under reverse bias

International Nuclear Information System (INIS)

Zhang, Lichun; Li, Qingshan; Qu, Chong; Zhang, Zhongjun; Huang, Ruizhi; Zhao, Fengzhou

2013-01-01

Heterojunction light-emitting diodes (LEDs) based on arrays of ZnO nanorods were fabricated on p-GaN films by the hydrothermal method. Without any phosphors, white-light electroluminescence (EL) from ZnO nanorods/p-GaN heterojunction LEDs operated at reverse breakdown bias was observed. The EL spectra are composed of an ultraviolet (UV) emission centered at 382 nm, a blue light located at 431 nm and a broadband yellow–green light at around 547 nm, which originated from band-edge emission in ZnO, the Mg acceptor levels in p-GaN and the deep-level states near the ZnO/GaN interface, respectively. The chromaticity coordinates of EL spectrum are very close to the (0.333, 0.333) of standard white light. The origin of these emissions has been discussed and the tunneling effect in the interface is probably the mechanism to explain EL emission. (paper)

An ultra-thin Schottky diode as a transmission particle detector for biological microbeams

International Nuclear Information System (INIS)

Grad, M; Harken, A; Randers-Pehrson, G; Brenner, D J; Attinger, D

2012-01-01

We fabricated ultrathin metal-semiconductor Schottky diodes for use as transmission particle detectors in the biological microbeam at Columbia University's Radiological Research Accelerator Facility (RARAF). The RARAF microbeam can deliver a precise dose of ionizing radiation in cell nuclei with sub-micron precision. To ensure an accurate delivery of charged particles, the facility currently uses a commercial charged-particle detector placed after the sample. We present here a transmission detector that will be placed between the particle accelerator and the biological specimen, allowing the irradiation of samples that would otherwise block radiation from reaching a detector behind the sample. Four detectors were fabricated with co-planar gold and aluminum electrodes thermally evaporated onto etched n-type crystalline silicon substrates, with device thicknesses ranging from 8.5 μm - 13.5 μm. We show coincident detections and pulse-height distributions of charged particles in both the transmission detector and the commercial detector above it. Detections are demonstrated at a range of operating conditions, including incoming particle type, count rate, and beam location on the detectors. The 13.5 μm detector is shown to work best to detect 2.7 MeV protons (H + ), and the 8.5 μm detector is shown to work best to detect 5.4 MeV alpha particles ( 4 He ++ ). The development of a transmission detector enables a range of new experiments to take place at RARAF on radiation-stopping samples such as thick tissues, targets that need immersion microscopy, and integrated microfluidic devices for handling larger quantities of cells and small organisms.

An ultra-thin Schottky diode as a transmission particle detector for biological microbeams

Science.gov (United States)

Harken, Andrew; Randers-Pehrson, Gerhard; Attinger, Daniel; Brenner, David J.

2013-01-01

We fabricated ultrathin metal-semiconductor Schottky diodes for use as transmission particle detectors in the biological microbeam at Columbia University’s Radiological Research Accelerator Facility (RARAF). The RARAF microbeam can deliver a precise dose of ionizing radiation in cell nuclei with sub-micron precision. To ensure an accurate delivery of charged particles, the facility currently uses a commercial charged-particle detector placed after the sample. We present here a transmission detector that will be placed between the particle accelerator and the biological specimen, allowing the irradiation of samples that would otherwise block radiation from reaching a detector behind the sample. Four detectors were fabricated with co-planar gold and aluminum electrodes thermally evaporated onto etched n-type crystalline silicon substrates, with device thicknesses ranging from 8.5 μm – 13.5 μm. We show coincident detections and pulse-height distributions of charged particles in both the transmission detector and the commercial detector above it. Detections are demonstrated at a range of operating conditions, including incoming particle type, count rate, and beam location on the detectors. The 13.5 μm detector is shown to work best to detect 2.7 MeV protons (H+), and the 8.5 μm detector is shown to work best to detect 5.4 MeV alpha particles (4He++). The development of a transmission detector enables a range of new experiments to take place at RARAF on radiation-stopping samples such as thick tissues, targets that need immersion microscopy, and integrated microfluidic devices for handling larger quantities of cells and small organisms. PMID:24058378

Fabricate heterojunction diode by using the modified spray pyrolysis method to deposit nickel-lithium oxide on indium tin oxide substrate.

Science.gov (United States)

Wu, Chia-Ching; Yang, Cheng-Fu

2013-06-12

P-type lithium-doped nickel oxide (p-LNiO) thin films were deposited on an n-type indium tin oxide (ITO) glass substrate using the modified spray pyrolysis method (SPM), to fabricate a transparent p-n heterojunction diode. The structural, optical, and electrical properties of the p-LNiO and ITO thin films and the p-LNiO/n-ITO heterojunction diode were characterized by field emission scanning electron microscopy (FE-SEM), X-ray diffraction (XRD), UV-visible spectroscopy, Hall effect measurement, and current-voltage (I-V) measurements. The nonlinear and rectifying I-V properties confirmed that a heterojunction diode characteristic was successfully formed in the p-LNiO/n-ITO (p-n) structure. The I-V characteristic was dominated by space-charge-limited current (SCLC), and the Anderson model demonstrated that band alignment existed in the p-LNiO/n-ITO heterojunction diode.

Electrical transport through Pb(Zr,Ti)O3 p-n and p-p heterostructures modulated by bound charges at a ferroelectric surface: Ferroelectric p-n diode

Science.gov (United States)

Watanabe, Yukio

1999-05-01

Current through (Pb,La)(Zr,Ti)O3 ferroelectrics on perovskite semiconductors is found to exhibit diode characteristics of which polarity is universally determined by the carrier conduction-type semiconductors. A persisting highly reproducible resistance modulation by a dc voltage, which has a short retention, is observed and is ascribed to a band bending of the ferroelectric by the formation of charged traps. This interpretation is consistent with a large relaxation current observed at a low voltage. On the other hand, a reproducible resistance modulation by a pulse voltage, which has a long retention, is observed in metal/(Pb,La)(Zr,Ti)O3/SrTiO3:Nb but not in metal/(Pb,La)(Zr,Ti)O3/(La,Sr)2CuO4 and is attributed to a possible band bending due to the spontaneous polarization (P) switching. The observed current voltage (IV) characteristics, the polarity dependence, the relaxation, and the modulation are explicable, if we assume a p-n or a p-p junction at the ferroelectric semiconductor interface (p: hole conduction type, n: electron conduction type). The analysis suggests that an intrinsically inhomogeneous P (∇P) near the ferroelectric/metal interface is likely very weak or existing in a very thin layer, when a reaction of the metal with the ferroelectric is eliminated. Additionally, the various aspects of transport through ferroelectrics are explained as a transport in the carrier depleted region.

Fabrication of radiation detector using PbI{sub 2} crystal

Energy Technology Data Exchange (ETDEWEB)

Shoji, T; Sakamoto, K; Ohba, K; Suehiro, T; Hiratate, Y [Tohoku Inst. of Tech., Sendai (Japan)

1996-07-01

In this paper, we will discuss the PbI{sub 2} radiation detector fabricated from a crystal grown by the zone melting method and by the vapor phase method, together with characteristics of the crystal obtained by a XPS analyzer. (J.P.N.)

Universal tunneling behavior in technologically relevant P/N junction diodes

International Nuclear Information System (INIS)

Solomon, Paul M.; Jopling, Jason; Frank, David J.; D'Emic, Chris; Dokumaci, O.; Ronsheim, P.; Haensch, W.E.

2004-01-01

Band-to-band tunneling was studied in ion-implanted P/N junction diodes with profiles representative of present and future silicon complementary metal-oxide-silicon (CMOS) field effect transistors. Measurements were done over a wide range of temperatures and implant parameters. Profile parameters were derived from analysis of capacitance versus voltage characteristics, and compared to secondary-ion mass spectroscopy analysis. When the tunneling current was plotted against the effective tunneling distance (tunneling distance corrected for band curvature) a quasi-universal exponential reduction of tunneling current versus, tunneling distance was found with an attenuation length of 0.38 nm, corresponding to a tunneling effective mass of 0.29 times the free electron mass (m 0 ), and an extrapolated tunneling current at zero tunnel distance of 5.3x10 7 A/cm 2 at 300 K. These results are directly applicable for predicting drain to substrate currents in CMOS transistors on bulk silicon, and body currents in CMOS transistors in silicon-on-insulator

A new CVD diamond mosaic-detector for (n, α) cross-section measurements at the n{sub T}OF experiment at CERN

Energy Technology Data Exchange (ETDEWEB)

Weiß, C., E-mail: christina.weiss@cern.ch [Atominstitut, Technische Universität Wien (Austria); European Organization for Nuclear Research (CERN), Geneva (Switzerland); Griesmayer, E. [Atominstitut, Technische Universität Wien (Austria); Guerrero, C. [European Organization for Nuclear Research (CERN), Geneva (Switzerland); Altstadt, S. [Johann-Wolfgang-Goethe Universität, Frankfurt (Germany); Andrzejewski, J. [Uniwersytet Łódzki, Lodz (Poland); Audouin, L. [Centre National de la Recherche Scientifique/IN2P3 - IPN, Orsay (France); Badurek, G. [Atominstitut, Technische Universität Wien (Austria); Barbagallo, M. [Istituto Nazionale di Fisica Nucleare, Bari (Italy); Bécares, V. [Centro de Investigaciones Energeticas Medioambientales y Tecnológicas (CIEMAT), Madrid (Spain); Bečvář, F. [Charles University, Prague (Czech Republic); Belloni, F. [Commissariat à l’Énergie Atomique (CEA) Saclay - Irfu, Gif-sur-Yvette (France); Berthoumieux, E. [Commissariat à l’Énergie Atomique (CEA) Saclay - Irfu, Gif-sur-Yvette (France); European Organization for Nuclear Research (CERN), Geneva (Switzerland); Billowes, J. [University of Manchester, Oxford Road, Manchester (United Kingdom); Boccone, V. [European Organization for Nuclear Research (CERN), Geneva (Switzerland); Bosnar, D. [Department of Physics, Faculty of Science, University of Zagreb (Croatia); Brugger, M.; Calviani, M. [European Organization for Nuclear Research (CERN), Geneva (Switzerland); Calviño, F. [Universitat Politecnica de Catalunya, Barcelona (Spain); and others

2013-12-21

At the n{sub T}OF experiment at CERN a dedicated single-crystal chemical vapor deposition (sCVD) Diamond Mosaic-Detector has been developed for (n,α) cross-section measurements. The detector, characterized by an excellent time and energy resolution, consists of an array of 9 sCVD diamond diodes. The detector has been characterized and a cross-section measurement has been performed for the {sup 59}Ni(n,α){sup 56}Fe reaction in 2012. The characteristics of the detector, its performance and the promising preliminary results of the experiment are presented. -- Highlights: •A large-area detector of 3 ×3 sCVD diamonds was built for (n, α) measurements. •The {sup 59}Ni(n, α){sup 56}Fe cross-section was measured successfully at n{sub T}OF/CERN. •The energy resolution of the detector meets the expectations from simulations. •The reaction products during the measurement at n{sub T}OF could clearly be separated. •The detector is suitable for (n, α) measurements in a heterogeneous beam.

Low cost, p-ZnO/n-Si, rectifying, nano heterojunction diode: Fabrication and electrical characterization

Directory of Open Access Journals (Sweden)

Vinay Kabra

2014-11-01

Full Text Available A low cost, highly rectifying, nano heterojunction (p-ZnO/n-Si diode was fabricated using solution-processed, p-type, ZnO nanoparticles and an n-type Si substrate. p-type ZnO nanoparticles were synthesized using a chemical synthesis route and characterized by XRD and a Hall effect measurement system. The device was fabricated by forming thin film of synthesized p-ZnO nanoparticles on an n-Si substrate using a dip coating technique. The device was then characterized by current–voltage (I–V and capacitance–voltage (C–V measurements. The effect of UV illumination on the I–V characteristics was also explored and indicated the formation of a highly rectifying, nano heterojunction with a rectification ratio of 101 at 3 V, which increased nearly 2.5 times (232 at 3 V under UV illumination. However, the cut-in voltage decreases from 1.5 V to 0.9 V under UV illumination. The fabricated device could be used in switches, rectifiers, clipper and clamper circuits, BJTs, MOSFETs and other electronic circuitry.

Bulk GaN Schottky Diodes for Millimeter Wave Frequency Multipliers, Phase I

Data.gov (United States)

National Aeronautics and Space Administration — Within the context of this project, White Light Power Inc. (WLPI) will demonstrate the feasibility of using vertical GaN Schottky diodes for high-power rectification...

Investigations on commercial semiconductor diodes as possible high dose rate radiation detectors

International Nuclear Information System (INIS)

Breitenhuber, L.; Kindl, P.; Obenaus, B.

1992-12-01

Investigations concerning the relevant properties of commercial semiconductor diodes such as their sensitivity and its dependence on accumulated dose, dose rate, energy, temperature and direction have been made in order to obtain their usefullness as radiation detectors. (authors)

A Low-Noise X-ray Astronomical Silicon-On-Insulator Pixel Detector Using a Pinned Depleted Diode Structure.

Science.gov (United States)

Kamehama, Hiroki; Kawahito, Shoji; Shrestha, Sumeet; Nakanishi, Syunta; Yasutomi, Keita; Takeda, Ayaki; Tsuru, Takeshi Go; Arai, Yasuo

2017-12-23

This paper presents a novel full-depletion Si X-ray detector based on silicon-on-insulator pixel (SOIPIX) technology using a pinned depleted diode structure, named the SOIPIX-PDD. The SOIPIX-PDD greatly reduces stray capacitance at the charge sensing node, the dark current of the detector, and capacitive coupling between the sensing node and SOI circuits. These features of the SOIPIX-PDD lead to low read noise, resulting high X-ray energy resolution and stable operation of the pixel. The back-gate surface pinning structure using neutralized p-well at the back-gate surface and depleted n-well underneath the p-well for all the pixel area other than the charge sensing node is also essential for preventing hole injection from the p-well by making the potential barrier to hole, reducing dark current from the Si-SiO₂ interface and creating lateral drift field to gather signal electrons in the pixel area into the small charge sensing node. A prototype chip using 0.2 μm SOI technology shows very low readout noise of 11.0 e - rms , low dark current density of 56 pA/cm² at -35 °C and the energy resolution of 200 eV(FWHM) at 5.9 keV and 280 eV (FWHM) at 13.95 keV.

Operation of a high-purity silicon diode alpha particle detector at 1.4 K

International Nuclear Information System (INIS)

Martoff, C.J.; Kaczanowicz, E.; Neuhauser, B.J.; Lopez, E.; Zhang, Y.; Ziemba, F.P.

1991-01-01

Detection of alpha particles at temperatures as low as 1.4 K was demonstrated using a specially fabricated Si diode. The diode was 475 mm 2 by 0.280 mm thick, fabricated from high-purity silicon with degenerately doped contacts. This is an important step toward development of dual-mode (ionization plus phonon) silicon detectors for low energy radiation. (orig.)

Operation of a high-purity silicon diode alpha particle detector at 1. 4 K

Energy Technology Data Exchange (ETDEWEB)

Martoff, C.J.; Kaczanowicz, E. (Temple Univ., Philadelphia, PA (USA)); Neuhauser, B.J.; Lopez, E.; Zhang, Y. (San Francisco State Univ., CA (USA)); Ziemba, F.P. (Quantrad Corp. (USA))

1991-03-01

Detection of alpha particles at temperatures as low as 1.4 K was demonstrated using a specially fabricated Si diode. The diode was 475 mm{sup 2} by 0.280 mm thick, fabricated from high-purity silicon with degenerately doped contacts. This is an important step toward development of dual-mode (ionization plus phonon) silicon detectors for low energy radiation. (orig.).

Current–voltage characteristics of high-voltage 4H-SiC p{sup +}–n{sub 0}–n{sup +} diodes in the avalanche breakdown mode

Energy Technology Data Exchange (ETDEWEB)

Ivanov, P. A., E-mail: Pavel.Ivanov@mail.ioffe.ru; Potapov, A. S.; Samsonova, T. P.; Grekhov, I. V. [Ioffe Physical–Technical Institute (Russian Federation)

2017-03-15

p{sup +}–n{sub 0}–n{sup +} 4H-SiC diodes with homogeneous avalanche breakdown at 1860 V are fabricated. The pulse current–voltage characteristics are measured in the avalanche-breakdown mode up to a current density of 4000 A/cm{sup 2}. It is shown that the avalanche-breakdown voltage increases with increasing temperature. The following diode parameters are determined: the avalanche resistance (8.6 × 10{sup –2} Ω cm{sup 2}), the electron drift velocity in the n{sub 0} base at electric fields higher than 10{sup 6} V/cm (7.8 × 10{sup 6} cm/s), and the relative temperature coefficient of the breakdown voltage (2.1 × 10{sup –4} K{sup –1}).

Leakage current reduction of vertical GaN junction barrier Schottky diodes using dual-anode process

Science.gov (United States)

Hayashida, Tetsuro; Nanjo, Takuma; Furukawa, Akihiko; Watahiki, Tatsuro; Yamamuka, Mikio

2018-04-01

The origin of the leakage current of a trench-type vertical GaN diode was discussed. We found that the edge of p-GaN is the main leakage spot. To reduce the reverse leakage current at the edge of p-GaN, a dual-anode process was proposed. As a result, the reverse blocking voltage defined at the leakage current density of 1 mA/cm2 of a vertical GaN junction barrier Schottky (JBS) diode was improved from 780 to 1,190 V, which is the highest value ever reported for vertical GaN Schottky barrier diodes (SBDs).

Amorphous silicon pixel radiation detectors and associated thin film transistor electronics readout

International Nuclear Information System (INIS)

Perez-Mendez, V.; Drewery, J.; Hong, W.S.; Jing, T.; Kaplan, S.N.; Lee, H.; Mireshghi, A.

1994-10-01

We describe the characteristics of thin (1 μm) and thick (>30 μm) hydrogenated amorphous silicon p-i-n diodes which are optimized for detecting and recording the spatial distribution of charged particles, x-rays and γ rays. For x-ray, γ ray, and charged particle detection we can use thin p-i-n photosensitive diode arrays coupled to evaporated layers of suitable scintillators. For direct detection of charged particles with high resistance to radiation damage, we use the thick p-i-n diode arrays. Deposition techniques using helium dilution, which produce samples with low stress are described. Pixel arrays for flux exposures can be readout by transistor, single diode or two diode switches. Polysilicon charge sensitive pixel amplifiers for single event detection are described. Various applications in nuclear, particle physics, x-ray medical imaging, neutron crystallography, and radionuclide chromatography are discussed

Structural transformations of TiO{sub 2} films with deposition temperature and electrical properties of nanostructure n-TiO{sub 2}/p-Si heterojunction diode

Energy Technology Data Exchange (ETDEWEB)

Aksoy, Seval; Caglar, Yasemin, E-mail: yasemincaglar@anadolu.edu.tr

2014-11-15

Highlights: • Titanium oxide (TiO{sub 2}) films have been deposited on p-Si substrates by sol gel spin coating technique. • The effect of deposition temperatures on structural and morphological properties of TiO{sub 2} films. • The electrical parameters of nanostructure n-TiO{sub 2}/p-Si heterojunction diode such as n, R{sub s} and ϕ{sub b} were investigated. - Abstract: Titanium oxide (TiO{sub 2}) films have been deposited on p-Si substrates by sol–gel method using spin coating technique. Structural and morphological properties were studied as a function of deposition temperatures by X-ray diffraction (XRD) and field emission scanning electron microscopy (FE-SEM). The deposition temperatures were chosen from 700 °C to 1100 °C. Crystallization of the anatase phase and its transformation to the rutile phase were observed at 700 °C and 800 °C, respectively. The fabrication of nanostructure n-TiO{sub 2}/p-Si heterojunction diode was formed by using T7 film deposited at 700 °C. The electrical parameters such as barrier height (ϕ{sub b}) and ideality factor (n) of nanostructure n-TiO{sub 2}/p-Si heterojunction diode were investigated by using I–V measurements and observed to be 0.58 eV and 5.39, respectively. Also, the values of ϕ{sub b} and series resistance (R{sub s}) were determined by using Cheung’s and Norde methods. From the I–V measurements taken at room temperature, the space charge limited (SCLC) mechanism was determined at the low voltage region. The obtained results showed that n-TiO{sub 2}/p-Si heterojunction diode is a good candidate for the applications of semiconductor electronic devices.

The development of p-type silicon detectors for the high radiation regions of the LHC

International Nuclear Information System (INIS)

Hanlon, M.D.L.

1998-04-01

This thesis describes the production and characterisation of silicon microstrip detectors and test structures on p-type substrates. An account is given of the production and full parameterisation of a p-type microstrip detector, incorporating the ATLAS-A geometry in a beam test. This detector is an AC coupled device incorporating a continuous p-stop isolation frame and polysilicon biasing and is typical of n-strip devices proposed for operation at the LHC. It was successfully read out using the FELix-128 analogue pipeline chip and a signal to noise (s/n) of 17±1 is reported, along with a spatial resolution of 14.6±0.2 μm. Diode test structures were fabricated on both high resistivity float zone material and on epitaxial material and subsequently irradiated with 24 GeV protons at the CERN PS up to a dose of (8.22±0.23) x 10 14 per cm 2 . An account of the measurement program is presented along with results on the changes in the effective doping concentration (N eff ) with irradiation and the changes in bulk current. Changes in the effective doping concentration and leakage current for high resistivity p-type material under irradiation were found to be similar to to that of n-type material. Values of α=(3.30±0.08) x 10 -17 A cm -1 for the leakage current parameter and g c =(1.20±0.05)x10 -2 cm -1 for the effective dopant introduction rate were found for this material. The epitaxial material did not perform better than the float zone material for the range of doses studied. Surprising results were obtained for highly irradiated p-type diodes illuminated on the ohmic side with an α-source, in that signals were observed well below the full depletion voltage. The processing that had been used to fabricate the test structures and the initial prototype that was studied in the test beam was based on the process used to fabricate devices on n-type material. Presented in this thesis are the modifications that were made to the process, which centred on the oxidation

Improvement of thick a-Si radiation detectors by field profile tailoring

International Nuclear Information System (INIS)

Drewery, J.S.; Cho, G.; Jing, T.; Kaplan, S.N.; Mireshghi, A.; Perez-Mendez, V.; Wildermuth, D.

1992-04-01

Application of thick (∼50 μm) a-Si p-i-n diodes as a direct radiation detector for minimum ionizing particles is hampered by the need to apply large bias voltages in order fully to deplete the detecting intrinsic layer, which typically contains 5 - 10 x 10 14 ionizable dangling bonds per CM 3 . By insertion of thin p-type layers at intervals within the intrinsic layer, the required depletion voltage can be reduced by a factor of at least 1/(n+l) where n is the number of layers inserted. This principle is demonstrated for devices approximately 12μm in thickness. It is shown that electron losses within the p type layer can be kept to minimum by choice of a low doping concentration for the introduced players

A circuital model of switching behaviour of 4H-SiC p+-n-n+ diodes valid at any current and temperature

International Nuclear Information System (INIS)

Bellone, S; Benedetto, L Di; Licciardo, G D; Corte, F Della

2014-01-01

A circuital model of 4H-SiC p + -n-n + diodes is presented, which is able to describe the switching behaviour of the devices in a wide range of current, voltage and temperature, at an arbitrary instant, with comparable accuracy of numerical simulations. The model has been analytically derived under generic conditions and is capable to calculate also the dynamic spatial distribution of minority carriers in the epitaxial layer. The accuracy of the model is shown by comparison with numerical simulations and experimental measurements.

Dependencies of surface plasmon coupling effects on the p-GaN thickness of a thin-p-type light-emitting diode.

Science.gov (United States)

Su, Chia-Ying; Lin, Chun-Han; Yao, Yu-Feng; Liu, Wei-Heng; Su, Ming-Yen; Chiang, Hsin-Chun; Tsai, Meng-Che; Tu, Charng-Gan; Chen, Hao-Tsung; Kiang, Yean-Woei; Yang, C C

2017-09-04

The high performance of a light-emitting diode (LED) with the total p-type thickness as small as 38 nm is demonstrated. By increasing the Mg doping concentration in the p-AlGaN electron blocking layer through an Mg pre-flow process, the hole injection efficiency can be significantly enhanced. Based on this technique, the high LED performance can be maintained when the p-type layer thickness is significantly reduced. Then, the surface plasmon coupling effects, including the enhancement of internal quantum efficiency, increase in output intensity, reduction of efficiency droop, and increase of modulation bandwidth, among the thin p-type LED samples of different p-type thicknesses that are compared. These advantageous effects are stronger as the p-type layer becomes thinner. However, the dependencies of these effects on p-type layer thickness are different. With a circular mesa size of 10 μm in radius, through surface plasmon coupling, we achieve the record-high modulation bandwidth of 625.6 MHz among c-plane GaN-based LEDs.

Dosimetry of Gamma Knife and linac-based radiosurgery using radiochromic and diode detectors

International Nuclear Information System (INIS)

Somigliana, A.; Borelli, S.; Zonca, G.; Pignoli, E.; Loi, G.; Marchesini, R.; Cattaneo, G.M.; Fiorino, C.; Vecchio, A. del; Calandrino, R.

1999-01-01

In stereotactic radiosurgery the choice of appropriate detectors, whether for absolute or relative dosimetry, is very important due to the steep dose gradient and the incomplete lateral electronic equilibrium. For both linac-based and Leksell Gamma Knife radiosurgery units, we tested the use of calibrated radiochromic film to measure absolute doses and relative dose distributions. In addition a small diode was used to estimate the relative output factors. The data obtained using radiochromic and diode detectors were compared with measurements performed with other conventional methods of dosimetry, with calculated values by treatment planning systems and with data prestored in the treatment planning system supplied by the Leksell Gamma Knife (LGK) vendor. Two stereotactic radiosurgery techniques were considered: Leksell Gamma Knife (using γ-rays from 60 Co) and linac-based radiosurgery (LR) (6 MV x-rays). Different detectors were used for both relative and absolute dosimetry: relative output factors (OFs) were estimated by using radiochromic and radiographic films and a small diode; relative dose distributions in the axial and coronal planes of a spherical polystyrene phantom were measured using radiochromic film and calculated by two different treatment planning systems (TPSs). The absolute dose at the sphere centre was measured by radiochromic film and a small ionization chamber. An accurate selection of radiochromic film was made: samples of unexposed film showing a percentage standard deviation of less than 3% were used for relative dose profiles, and for absolute dose and OF evaluations this value was reduced to 1.5%. Moreover a proper calibration curve was made for each set of measurements. With regard to absolute doses, the results obtained with the ionization chamber are in good correlation with radiochromic film-generated data, for both LGK and LR, showing a dose difference of less than 1%. The output factor evaluations, performed using different methods

Investigation of diode parameters using I-V and C-V characteristics of In/SiO{sub 2}/p-Si (MIS) Schottky diodes

Energy Technology Data Exchange (ETDEWEB)

Yueksel, O.F. [Department of Physics, Faculty of Arts and Science, Selcuk University, Kampus, Konya 42075 (Turkey)], E-mail: fyuksel@selcuk.edu.tr; Selcuk, A.B.; Ocak, S.B. [PK, 14 Etlik, Ankara (Turkey)

2008-08-01

A study on interface states density distribution and characteristic parameters of the In/SiO{sub 2}/p-Si (MIS) capacitor has been made. The thickness of the SiO{sub 2} film obtained from the measurement of the corrected capacitance in the strong accumulation region for MIS Schottky diodes was 220 A. The diode parameters from the forward bias I-V characteristics such as ideality factor, series resistance and barrier heights were found to be 1.75, 106-112 {omega} and 0.592 eV, respectively. The energy distribution of the interface state density D{sub it} was determined from the forward bias I-V characteristics by taking into account the bias dependence of the effective barrier height. The interface state density obtained using the I-V characteristics had an exponential growth, with bias towards the top of the valance band, from 9.44x10{sup 13} eV{sup -1} cm{sup -2} in 0.329-E{sub v} eV to 1.11x10{sup 13} eV{sup -1} cm{sup -2} in 0.527-E{sub v} eV at room temperature. Furthermore, the values of interface state density D{sub it} obtained by the Hill-Coleman method from the C-V characteristics range from 52.9x10{sup 13} to 1.11x10{sup 13} eV{sup -1} cm{sup -2} at a frequency range of 30kHz-1 MHz. These values of D{sub it} and R{sub s} were responsible for the non-ideal behaviour of I-V and C-V characteristics.

A Prototype RICH Detector Using Multi-Anode Photo Multiplier Tubes and Hybrid Photo-Diodes

CERN Document Server

Albrecht, E; Bibby, J H; Brook, N H; Doucas, G; Duane, A; Easo, S; Eklund, L; French, M; Gibson, V; Gys, Thierry; Halley, A W; Harnew, N; John, M; Piedigrossi, D; Rademacker, J; Simmons, B; Smale, N J; Teixeira-Dias, P; Toudup, L W; Websdale, David M; Wilkinson, G R; Wotton, S A

2001-01-01

The performance of a prototype Ring Imaging Cherenkov Detector is studied using a charged particle beam. The detector performance, using CF4 and air as radiators, is described. Cherenkov angle precision and photoelectron yield using hybrid photo-diodes and multi-anode PMTs agree with simulations and are assessed in terms of the requirements of the LHCb experiment.

Pulse shape discrimination studies of Phase I Ge-detectors

Energy Technology Data Exchange (ETDEWEB)

Kirsch, Andrea [MPI fuer Kernphysik, Saupfercheckweg 1, 69117 Heidelberg (Germany); Collaboration: GERDA-Collaboration

2013-07-01

The GERmanium Detector Array experiment aims to search for the neutrinoless double beta decay (0νββ) of {sup 76}Ge by using isotopically enriched germanium crystals as source and detector simultaneously. The bare semiconductor diodes are operated in liquid argon at cryogenic temperatures in an ultra-low background environment. In addition, Gerda applies different active background reduction techniques, one of which is pulse shape discrimination studies of the current Phase I germanium detectors. The analysis of the signal time structure provides an important tool to distinguish single site events (SSE) of the ββ-decay from multi site events (MSE) of common gamma-ray background or surface events. To investigate the correlation between the signal shape and the interaction position, a new, also to the predominantly deployed closed-ended coaxial HPGe detectors applicable analysis technique has been developed. A summary of the used electronic/detector assembly is given and followed by a discussion of the performed classification procedure by means of accurate pulse shape simulations of 0νββ-like signals. Finally, the obtained results are presented along with an evaluation of the relevance for the Gerda experiment.

Characterization and Performance of Silicon n-in-p Pixel Detectors for the ATLAS Upgrades

CERN Document Server

Weigell, Philipp; Gallrapp, Christian; La Rosa, Alessandro; Macchiolo, Anna; Nisius, Richard; Pernegger, Heinz; Richter, Rainer

2011-01-01

The existing ATLAS Tracker will be at its functional limit for particle fluences of 10^15 neq/cm^2 (LHC). Thus for the upgrades at smaller radii like in the case of the planned Insertable B-Layer (IBL) and for increased LHC luminosities (super LHC) the development of new structures and materials which can cope with the resulting particle fluences is needed. N-in-p silicon devices are a promising candidate for tracking detectors to achieve these goals, since they are radiation hard, cost efficient and are not type inverted after irradiation. A n-in-p pixel production based on a MPP/HLL design and performed by CiS (Erfurt, Germany) on 300 \\mu m thick Float-Zone material is characterised and the electrical properties of sensors and single chip modules (SCM) are presented, including noise, charge collection efficiencies, and measurements with MIPs as well as an 241Am source. The SCMs are built with sensors connected to the current the ATLAS read-out chip FE-I3. The characterisation has been performed with the ATL...

Polarization phenomena in Al/p-CdTe/Pt X-ray detectors

Energy Technology Data Exchange (ETDEWEB)

Principato, F., E-mail: fabio.principato@unipa.it; Turturici, A.A.; Gallo, M.; Abbene, L.

2013-12-01

Over the last decades, CdTe detectors are widely used for the development of room temperature X-ray and gamma ray spectrometers. Typically, high resolution CdTe detectors are fabricated with blocking contacts (indium and aluminum) ensuring low leakage currents and high electric field for optimum charge collection. As well known, time instability under bias voltage (termed as polarization) is the major drawback of CdTe diode detectors. Polarization phenomena cause a progressive degradation of the spectroscopic performance with time, due to hole trapping and detrapping from deep acceptors levels. In this work, we studied the polarization phenomenon on new Al/p-CdTe/Pt detectors, manufactured by Acrorad (Japan), through electrical and spectroscopic approaches. In particular, we investigated on the time degradation of the spectroscopic response of the detectors at different temperatures, voltages and energies. Current transient measurements were also performed to better understand the properties of the deep acceptor levels and their correlation with the polarization effect.

Formation of definite GaN p-n junction by Mg-ion implantation to n--GaN epitaxial layers grown on a high-quality free-standing GaN substrate

Science.gov (United States)

Oikawa, Takuya; Saijo, Yusuke; Kato, Shigeki; Mishima, Tomoyoshi; Nakamura, Tohru

2015-12-01

P-type conversion of n--GaN by Mg-ion implantation was successfully performed using high quality GaN epitaxial layers grown on free-standing low-dislocation-density GaN substrates. These samples showed low-temperature PL spectra quite similar to those observed from Mg-doped MOVPE-grown p-type GaN, consisting of Mg related donor-acceptor pair (DAP) and acceptor bound exciton (ABE) emission. P-n diodes fabricated by the Mg-ion implantation showed clear rectifying I-V characteristics and UV and blue light emissions were observed at forward biased conditions for the first time.

Study of edge effects in the breakdown process of p sup + on n-bulk silicon diodes

CERN Document Server

Militaru, O; Bozzi, C; Rold, M D; Dell'Orso, R; Dutta, S; Messineo, A; Mihul, A; Tonelli, G; Verdini, P G; Wheadon, R; Xie, Z

2000-01-01

The paper describes the role of the n sup + edge implants in the breakdown process of p sup + on n-bulk silicon diodes. Laboratory measurements and simulation studies are presented on a series of test structures aimed at an optimization of the design in the edge region. The dependence of the breakdown voltage on the geometrical parameters of the devices is discussed in detail. Design rules are extracted for the use of n sup + -layers along the scribe line to avoid surface conduction of current generated by the exposed edges. The effect of neutron irradiation has been studied up to a fluence of 1.8x10 sup 1 sup 5 cm sup - sup 2.

AlGaInN-based ultraviolet light-emitting diodes grown on Si(111)

International Nuclear Information System (INIS)

Kipshidze, G.; Kuryatkov, V.; Borisov, B.; Holtz, M.; Nikishin, S.; Temkin, H.

2002-01-01

Ultraviolet light-emitting diodes grown on Si(111) by gas-source molecular-beam epitaxy with ammonia are described. The layers are composed of superlattices of AlGaN/GaN and AlN/AlGaInN. The layers are doped n and p type with Si and Mg, respectively. Hole concentration of 4x10 17 cm -3 , with a mobility of 8 cm2/Vs, is measured in Al 0.4 Ga 0.6 N/GaN. We demonstrate effective n- and p-type doping of structures based on AlN/AlGaInN. Light-emitting diodes based on these structures show light emission between 290 and 334 nm

Fabrication study of GaAs mesa diodes for X-ray detection

OpenAIRE

Ng, J.S.; Meng, X.; Lees, J.E.; Barnett, A.; Tan, C.H.

2014-01-01

A study of leakage currents using GaAs mesa p-i-n diodes for X-ray photon counting is presented. Different wet chemical etching solution and etch depth were used in the fabrication of these mesa diodes. Low and uniform leakage currents were achieved when the diode fabrication used (i) a combination of main etching solution and finishing etching solution for the etching, and (ii) partially etched mesas. The diodes fabricated using these methods showed well-defined X-ray peaks when illuminated ...

Enhancement of light output power of GaN-based light-emitting diodes with photonic quasi-crystal patterned on p-GaN surface and n-side sidewall roughing

Science.gov (United States)

2013-01-01

In this paper, GaN-based light-emitting diodes (LEDs) with photonic quasi-crystal (PQC) structure on p-GaN surface and n-side roughing by nano-imprint lithography are fabricated and investigated. At an injection current of 20 mA, the LED with PQC structure on p-GaN surface and n-side roughing increased the light output power of the InGaN/GaN multiple quantum well LEDs by a factor of 1.42, and the wall-plug efficiency is 26% higher than the conventional GaN-based LED type. After 500-h life test (55°C/50 mA), it was found that the normalized output power of GaN-based LED with PQC structure on p-GaN surface and n-side roughing only decreased by 6%. These results offer promising potential to enhance the light output powers of commercial light-emitting devices using the technique of nano-imprint lithography. PMID:23683526

Radiation resistance and comparative performance of ITO/InP and n/p InP homojunction solar cells

International Nuclear Information System (INIS)

Weinberg, I.; Swartz, C.K.; Hart, R.E. Jr.; Coutts, T.J.

1988-09-01

The radiation resistance of ITO/InP cells processed by DC magnetron sputtering is compared to that of standard n/p InP and GaAs homojunction cells. After 20 MeV proton irradiations, it is found that the radiation resistance of the present ITO/InP cell is comparable to that of the n/p homojunction InP cell and that both InP cell types have radiation resistance significantly greater than GaAs. The relatively lower radiation resistance, observed at higher fluence, for the InP cell with the deepest junction depth, is attributed to losses in the cells emitter region. Diode parameters obtained from I sub sc - V sub oc plots, data from surface Raman spectroscopy, and determinations of surface conductivity types are used to investigate the configuration of the ITO/InP cells. It is concluded that thesee latter cells are n/p homojunctions, the n-region consisting of a disordered layer at the oxide semiconductor

Comprehensive study of the electronic and optical behavior of highly degenerate p-type Mg-doped GaN and AlGaN

Science.gov (United States)

Gunning, Brendan P.; Fabien, Chloe A. M.; Merola, Joseph J.; Clinton, Evan A.; Doolittle, W. Alan; Wang, Shuo; Fischer, Alec M.; Ponce, Fernando A.

2015-01-01

The bulk and 2-dimensional (2D) electrical transport properties of heavily Mg-doped p-type GaN films grown on AlN buffer layers by Metal Modulated Epitaxy are explored. Distinctions are made between three primary p-type conduction mechanisms: traditional valence band conduction, impurity band conduction, and 2D conduction within a 2D hole gas at a hetero-interface. The bulk and 2D contributions to the overall carrier transport are identified and the relative contributions are found to vary strongly with growth conditions. Films grown with III/V ratio less than 1.5 exhibit high hole concentrations exceeding 2 × 1019 cm-3 with effective acceptor activation energies of 51 meV. Films with III/V ratios greater than 1.5 exhibit lower overall hole concentrations and significant contributions from 2D transport at the hetero-interface. Films grown with III/V ratio of 1.2 and Mg concentrations exceeding 2 × 1020 cm-3 show no detectable inversion domains or Mg precipitation. Highly Mg-doped p-GaN and p-AlGaN with Al fractions up to 27% similarly exhibit hole concentrations exceeding 2 × 1019 cm-3. The p-GaN and p-Al0.11Ga0.89N films show broad ultraviolet (UV) photoluminescence peaks, which intercept the valence band, supporting the presence of a Mg acceptor band. Finally, a multi-quantum-well light-emitting diode (LED) and p-i-n diode are grown, both of which demonstrate rectifying behavior with turn-on voltages of 3-3.5 V and series resistances of 6-10 Ω without the need for any post-metallization annealing. The LED exhibits violet-blue luminescence at 425 nm, while the p-i-n diode shows UV luminescence at 381 nm, and both devices still show substantial light emission even when submerged in liquid nitrogen at 77 K.

Nuclear radiation detector based on ion implanted p-n junction in 4H-SiC

International Nuclear Information System (INIS)

Vervisch, V.; Issa, F.; Ottaviani, L.; Lazar, M.; Kuznetsov, A.; Szalkai, D.; Klix, A.; Lyoussi, A.; Vermeeren, L.; Hallen, A.

2013-06-01

In this paper, we propose a new device detector based on ion implanted p-n junction in 4H-SiC for nuclear instrumentation. We showed the interest to use 10 Boron as a Neutron Converter Layer in order to detect thermal neutrons. We present the main results obtained during irradiation tests performed in the Belgian Reactor 1. We show the capability of our detector by means of first results of the detector response at different reverse voltage biases and at different reactor power (authors)

Studies of frequency dependent C-V characteristics of neutron irradiated p+-n silicon detectors

International Nuclear Information System (INIS)

Li, Zheng; Kraner, H.W.

1990-10-01

Frequency-dependent capacitance-voltage fluence (C-V) characteristics of neutron irradiated high resistivity silicon p + -n detectors have been observed up to a fluence of 8.0 x 10 12 n/cm 2 . It has been found that frequency dependence of the deviation of the C-V characteristic (from its normal V -1/2 dependence), is strongly dependent on the ratio of the defect density and the effective doping density N t /N' d . As the defect density approaches the effective dopant density, or N t /N' d → 1, the junction capacitance eventually assumes the value of the detector geometry capacitance at high frequencies (f ≤ 10 5 Hz), independent of voltage. A two-trap-level model using the concept of quasi-fermi levels has been developed, which predicts both the effects of C-V frequency dependence and dopant compensation observed in this study

Characterization of 150μm thick epitaxial silicon detectors from different producers after proton irradiation

International Nuclear Information System (INIS)

Hoedlmoser, H.; Moll, M.; Haerkoenen, J.; Kronberger, M.; Trummer, J.; Rodeghiero, P.

2007-01-01

Epitaxial (EPI) silicon has recently been investigated for the development of radiation tolerant detectors for future high-luminosity HEP experiments. A study of 150μm thick EPI silicon diodes irradiated with 24GeV/c protons up to a fluence of 3x10 15 p/cm 2 has been performed by means of Charge Collection Efficiency (CCE) measurements, investigations with the Transient Current Technique (TCT) and standard CV/IV characterizations. The aim of the work was to investigate the impact of radiation damage as well as the influence of the wafer processing on the material performance by comparing diodes from different manufacturers. The changes of CCE, full depletion voltage and leakage current as a function of fluence are reported. While the generation of leakage current due to irradiation is similar in all investigated series of detectors, a difference in the effective doping concentration can be observed after irradiation. In the CCE measurements an anomalous drop in performance was found even for diodes exposed to very low fluences (5x10 13 p/cm 2 ) in all measured series. This result was confirmed for one series of diodes in TCT measurements with an infrared laser. TCT measurements with a red laser showed no type inversion up to fluences of 3x10 15 p/cm 2 for n-type devices whereas p-type diodes undergo type inversion from p- to n-type for fluences higher than ∼2x10 14 p/cm 2

Conduction mechanism in electron beam irradiated Al/n-Si Schottky diode

International Nuclear Information System (INIS)

Vali, Indudhar Panduranga; Shetty, Pramoda Kumara; Mahesha, M.G.; Petwal, V.C.

2016-01-01

In the high energy physics experiments, silicon based diodes are used to fabricate radiation detector to detect the charged particles. The Schottky barrier diodes have been studied extensively to understand the behavior of metal semiconductor interface, since such interfaces have been utilized as typical contacts in silicon devices. Because of surface states, interfacial layer, microscopic clusters of metal-semiconductor phases and other effects, it is difficult to fabricate junctions with barriers near the ideal values predicted from the work functions of the two isolated materials, therefore measured barrier heights are used in the device design. In this work, the Al/n-Si Schottky contacts are employed to study the diode parameters (Schottky barrier height and ideality factor), where the Schottky contacts were fabricated on electron beam irradiated silicon wafers. The interface behavior between electron irradiated Si wafer and post metal deposition is so far not reported. This method could be an alternative way to tailor the Schottky barrier height (SBH) without subjecting semiconductor sample to pre chemical and/or post heat treatments during fabrication

Low temperature p-type doping of (Al)GaN layers using ammonia molecular beam epitaxy for InGaN laser diodes

Science.gov (United States)

Malinverni, M.; Lamy, J.-M.; Martin, D.; Feltin, E.; Dorsaz, J.; Castiglia, A.; Rossetti, M.; Duelk, M.; Vélez, C.; Grandjean, N.

2014-12-01

We demonstrate state-of-the-art p-type (Al)GaN layers deposited at low temperature (740 °C) by ammonia molecular beam epitaxy (NH3-MBE) to be used as top cladding of laser diodes (LDs) with the aim of further reducing the thermal budget on the InGaN quantum well active region. Typical p-type GaN resistivities and contact resistances are 0.4 Ω cm and 5 × 10-4 Ω cm2, respectively. As a test bed, we fabricated a hybrid laser structure emitting at 400 nm combining n-type AlGaN cladding and InGaN active region grown by metal-organic vapor phase epitaxy, with the p-doped waveguide and cladding layers grown by NH3-MBE. Single-mode ridge-waveguide LD exhibits a threshold voltage as low as 4.3 V for an 800 × 2 μm2 ridge dimension and a threshold current density of ˜5 kA cm-2 in continuous wave operation. The series resistance of the device is 6 Ω and the resistivity is 1.5 Ω cm, confirming thereby the excellent electrical properties of p-type Al0.06Ga0.94N:Mg despite the low growth temperature.

Determination of ascorbic acid by high performance liquid chromatography (H. P. L. C.) using photodiode array detector

International Nuclear Information System (INIS)

Elbashier, E. E.; Greenway, G. M; Townshend, A.

2005-01-01

This paper describes a simple and rapid method for the determination of vitamin C using H. P. L. C. A reversed phase C 1 8 column was used to perform ion pairing chromatography, the ion pairing agent tri-n-butylamine and mobile phase 90:10 phospate buffer (pH 4.5) to methanol. A diode array spectrophotometric detector facilitated method development allowing chromatograms to be obtained for range of wavelengths. A linear calibration curve was obtained in range 0-50 μg/ml with correlation coefficient of 0.999 and detection limit was 1.5 μg/ml and relative standard deviation was 1.8% for ten samples at 10μg/ml.(Author)

Spin-photon entangling diode

DEFF Research Database (Denmark)

Flindt, Christian; Sørensen, A. S.; Lukin, M. D.

2007-01-01

We propose a semiconductor device that can electrically generate entangled electron spin-photon states, providing a building block for entanglement of distant spins. The device consists of a p-i-n diode structure that incorporates a coupled double quantum dot. We show that electronic control of t...

Experience from operating germanium detectors in GERDA

Science.gov (United States)

Palioselitis, Dimitrios; GERDA Collaboration

2015-05-01

Phase I of the Germanium Detector Array (GERDA) experiment, searching for the neutrinoless double beta (0νββ) decay of 76Ge, was completed in September 2013. The most competitive half-life lower limit for the 0νββ decay of 76Ge was set (T-0ν1/2 > 2.1 · 1025 yr at 90% C.L.). GERDA operates bare Ge diodes immersed in liquid argon. During Phase I, mainly refurbished semi-coaxial high purity Ge detectors from previous experiments were used. The experience gained with handling and operating bare Ge diodes in liquid argon, as well as the stability and performance of the detectors during GERDA Phase I are presented. Thirty additional new enriched BEGe-type detectors were produced and will be used in Phase II. A subgroup of these detectors has already been used successfully in GERDA Phase I. The present paper gives an overview of the production chain of the new germanium detectors, the steps taken to minimise the exposure to cosmic radiation during manufacturing, and the first results of characterisation measurements in vacuum cryostats.

N-isopropyl-p-[I[sup 123

Energy Technology Data Exchange (ETDEWEB)

Tada, Hiroshi; Morooka, Keiichi; Arimoto, Kiyoshi; Matsuo, Takiko; Takagi, Kazue; Yanagawa, Etsuko (Toho Univ., Tokyo (Japan). School of Medicine)

1992-09-01

We studied the clinical usefulness of I[sup 123]-IMP SPECT in 50 pediatric patients with CNS disorders, which were categorized into the convulsive disorder group (n=20), the cerebrovascular disorder group (n=10), the acute encephalopathy or CNS infection group (n=10), the metabolic or degenerative disorder group (n=6), the congenital abnormality group (n=2) and the migraine group (n=2). The findings obtained were compared with those of cranial CT. I[sup 123]-IMP SPECT revealed abnormal findings in 45 out of the 50 patients (90%), although cranial CT showed abnormal findings in only 24 patients (48%). This difference was statistically significant (p<0.01). In all groups except the migraine, we could find abnormal findings in more than 90% of the patients. Out of 28 patients without focal findings on the initial CT scanning. I[sup 123]-IMP SPECT showed focal abnormalities in 26 patients (93%). Moreover in many patients with focal neurological abnormalities, we found focal abnormalities of I[sup 123]-IMP SPECT related with neurological abnormalities of the patients. From these findings, we think I[sup 123]-IMP SPECT might be superior to CT scanning in examining a localized lesion. It was found that in many patients with focal abnormalities in CT scanning, I[sup 123]-IMP SPECT showed larger abnormalities in CT scanning. By using I[sup 123]-IMP SPECT we might be able to study the blood perfusional state surrounding the abnormal area shown by CT. In 3 patients with acute cerebrovascular disorders, I[sup 123]-IMP SPECT revealed abnormal findings 3 to 11 days earlier than cranial CT. I[sup 123]-IMP SPECT might be useful for early recognition of the pathological state. From these experiences, we concluded that I[sup 123]-IMP SPECT was useful for studying the pathophysiology of CNS disorders in children. (author).

CHICSi - a compact ultra-high vacuum compatible detector system for nuclear reaction experiments at storage rings. II. Detectors

Energy Technology Data Exchange (ETDEWEB)

Golubev, P.; Avdeichikov, V.; Carlen, L.; Jakobsson, B. E-mail: bo.jakobsson@kosufy.lu.se; Siwek, A.; Veldhuizen, E.J. van; Westerberg, L.; Whitlow, H.J

2003-03-11

We describe the detectors for identification of charged particles and fragments in CHICSi, a large solid angle multi-telescope system mounted inside an ultra-high vacuum (UHV), cluster-jet target chamber. CHICSi performs nuclear reaction experiments at storage rings. The telescopes consist of a first very thin, 10-14 {mu}m Si detector, a second 300 {mu}m (or possibly 500 {mu}m) ion implanted Si detector supplemented by a 6 mm GSO(Ce) scintillator read out by a photodiode (PD) or by a third 300 {mu}m Si detector. The telescopes provide full charge separation up to Z=17 and mass resolution up to A=9 in the energy range 0.7-60A MeV. The thin p-i-n diode detector, etched out from a 280 {mu}m Si wafer, and the GSO/PD detector, both exclusively developed for CHICSi, provide an energy resolution {<=}8%, while the standard 300 {mu}m detectors have {<=}2% energy resolution. Radiation stability of the Si detectors is confirmed up to an integrated flux of 10{sup 10} alpha particles. The GSO detector has 70% light collection efficiency with the optical coupling to the PD a simple open, 0.2 mm, gap. A new method, developed to perform absolute energy calibration for the GSO/PD detector is presented.

CHICSi - a compact ultra-high vacuum compatible detector system for nuclear reaction experiments at storage rings. II. Detectors

International Nuclear Information System (INIS)

Golubev, P.; Avdeichikov, V.; Carlen, L.; Jakobsson, B.; Siwek, A.; Veldhuizen, E.J. van; Westerberg, L.; Whitlow, H.J.

2003-01-01

We describe the detectors for identification of charged particles and fragments in CHICSi, a large solid angle multi-telescope system mounted inside an ultra-high vacuum (UHV), cluster-jet target chamber. CHICSi performs nuclear reaction experiments at storage rings. The telescopes consist of a first very thin, 10-14 μm Si detector, a second 300 μm (or possibly 500 μm) ion implanted Si detector supplemented by a 6 mm GSO(Ce) scintillator read out by a photodiode (PD) or by a third 300 μm Si detector. The telescopes provide full charge separation up to Z=17 and mass resolution up to A=9 in the energy range 0.7-60A MeV. The thin p-i-n diode detector, etched out from a 280 μm Si wafer, and the GSO/PD detector, both exclusively developed for CHICSi, provide an energy resolution ≤8%, while the standard 300 μm detectors have ≤2% energy resolution. Radiation stability of the Si detectors is confirmed up to an integrated flux of 10 10 alpha particles. The GSO detector has 70% light collection efficiency with the optical coupling to the PD a simple open, 0.2 mm, gap. A new method, developed to perform absolute energy calibration for the GSO/PD detector is presented

SPECTRAL CHARACTERISTICS OF MID-INFRARED LIGHT-EMITTING DIODES BASED ON InAs (Sb,P

Directory of Open Access Journals (Sweden)

N. K. Zhumashev

2016-01-01

Full Text Available Subject of Study. We consider spectral characteristics of mid-infrared light-emitting diodes with heterostructures based on InAs(Sb,P emitting at T=300 K in the wavelength range 3.4–4.1 micrometers. The aim of the study was to search for the ways of increasing the diode efficiency. Methods. The heterostructures were grown from metal-organic chemical compounds with the use of vapor-phase epitaxial technique. The spectra were recorded under pulse excitation with the use of computer-controlled installation employing MDR-23 grating monochromator and a lock-in amplifier. InSb photodiode was used as a detector. Comparative study of electroluminescence spectra of the diodes was carried out at the temperatures equal to 300 K and 77 K. We compared the obtained data with the calculation results of the band diagrams of the heterostructures. Main Results. As a result of comparative study of the electroluminescence spectra of the diodes recorded at 300 K and 77 K we have established that increasing of their efficiency is hindered by substantial influence of Auger recombination. For the first time at 77 К we have observed the effect of stimulated emission from InAsSb active layer in light-emitting structures made of InAs/InAsSb/InAsSbP. For heterostructures with quantum wells InAs/(InAs/InAsSb/InAsSbP we have found out that at 77 К the carrier recombination occurs outside quantum wells, which points out to the insufficient carrier localization in the active layer. Thus, we have shown that the efficiency of mid-infrared light-emitting diodes based on InAs(Sb,P can be increased via suppression of Auger-recombination and improvement of carrier localization in the active region. Practical Relevance. The results of the study can be used for development of heterostructures for mid-infrared light-emitting diodes.

A Planar, Chip-Based, Dual-Beam Refractometer Using an Integrated Organic Light Emitting Diode (OLED) Light Source and Organic Photovoltaic (OPV) Detectors

Science.gov (United States)

Ratcliff, Erin L.; Veneman, P. Alex; Simmonds, Adam; Zacher, Brian; Huebner, Daniel

2010-01-01

We present a simple chip-based refractometer with a central organic light emitting diode (OLED) light source and two opposed organic photovoltaic (OPV) detectors on an internal reflection element (IRE) substrate, creating a true dual-beam sensor platform. For first-generation platforms, we demonstrate the use of a single heterojunction OLED based on electroluminescence emission from an Alq3/TPD heterojunction (tris-(8-hydroxyquinoline)aluminum/N,N′-Bis(3-methylphenyl)-N,N′-diphenylbenzidine) and light detection with planar heterojunction pentacene/C60 OPVs. The sensor utilizes the considerable fraction of emitted light from conventional thin film OLEDs that is coupled into guided modes in the IRE instead of into the forward (display) direction. A ray-optics description is used to describe light throughput and efficiency-limiting factors for light coupling from the OLED into the substrate modes, light traversing through the IRE substrate, and light coupling into the OPV detectors. The arrangement of the OLED at the center of the chip provides for two sensing regions, a “sample” and “reference” channel, with detection of light by independent OPV detectors. This configuration allows for normalization of the sensor response against fluctuations in OLED light output, stability, and local fluctuations (temperature) which might influence sensor response. The dual beam configuration permits significantly enhanced sensitivity to refractive index changes relative to single-beam protocols, and is easily integrated into a field-portable instrumentation package. Changes in refractive index (ΔR.I.) between 10−2 and 10−3 R.I. units could be detected for single channel operation, with sensitivity increased to ΔR.I. ≈ 10−4 units when the dual beam configuration is employed. PMID:20218580

Radiation damage resistance of AlGaN detectors for applications in the extreme-ultraviolet spectral range

Energy Technology Data Exchange (ETDEWEB)

Barkusky, Frank; Peth, Christian; Bayer, Armin; Mann, Klaus [Laser-Laboratorium-Goettingen e.V., Hans-Adolf-Krebs-Weg 1, D-37077 Goettingen (Germany); John, Joachim; Malinowski, Pawel E. [Interuniversity MicroElectronic Center (IMEC), Kapeldreef 75, B-3001 Leuven (Belgium)

2009-09-15

We report on the fabrication of aluminum gallium nitride (AlGaN) Schottky-photodiode-based detectors. AlGaN layers were grown using metal-organic chemical vapor deposition (MOCVD) on Si(111) wafers. The diodes were characterized at a wavelength of 13.5 nm using a table-top extreme-ultraviolet (EUV) radiation source, consisting of a laser-produced xenon plasma and a Schwarzschild objective. The responsivity of the diodes was tested between EUV energies ranging from 320 nJ down to several picojoules. For low fluences, a linear responsivity of 7.14 mAs/J could be determined. Saturation starts at approximately 1 nJ, merging into a linear response of 0.113 mAs/J, which could be attributed to the photoeffect on the Au electrodes on top of the diode. Furthermore, degradation tests were performed up to an absolute dose of 3.3x10{sup 19} photons/cm{sup 2}. AlGaN photodiodes were compared to commercially available silicon-based photodetectors. For AlGaN diodes, responsivity does not change even for the highest EUV dose, whereas the response of the Si diode decreases linearly to {approx}93% after 2x10{sup 19} photons/cm{sup 2}.

Fully integrated InGaAs/InP single-photon detector module with gigahertz sine wave gating

Energy Technology Data Exchange (ETDEWEB)

Liang Xiaolei; Ma Jian; Jin Ge; Chen Zengbing; Zhang Jun; Pan Jianwei [Hefei National Laboratory for Physical Sciences at Microscale and Department of Modern Physics, University of Science and Technology of China, Hefei, Anhui 230026 (China); Liu Jianhong; Wang Quan; Du Debing [Anhui Quantum Communication Technology Co., Ltd., Hefei, Anhui 230088 (China)

2012-08-15

InGaAs/InP single-photon avalanche diodes (SPADs) working in the regime of GHz clock rates are crucial components for the high-speed quantum key distribution (QKD). We have developed for the first time a compact, stable, and user-friendly tabletop InGaAs/InP single-photon detector system operating at a 1.25 GHz gate rate that fully integrates functions for controlling and optimizing SPAD performance. We characterize the key parameters of the detector system and test the long-term stability of the system for continuous operation of 75 h. The detector system can substantially enhance QKD performance and our present work paves the way for practical high-speed QKD applications.

Electronic parameters of high barrier Au/Rhodamine-101/n-Inp Schottky diode with organic ınterlayer

International Nuclear Information System (INIS)

Güllü, Ö.; Aydoğan, S.; Türüt, A.

2012-01-01

In this work, we present that Rhodamine-101 (Rh-101) organic molecules can control the electrical characteristics of conventional Au/n-InP metal–semiconductor contacts. An Au/n-InP Schottky junction with Rh-101 interlayer has been formed by using a simple cast process. A potential barrier height as high as 0.88 eV has been achieved for Au/Rh-101/n-InP Schottky diodes, which have good current–voltage (I–V) characteristics. This good performance is attributed to the effect of formation of interfacial organic thin layer between Au and n-InP. By using capacitance-voltage measurement of the Au/Rh-101/n-InP Schottky diode the diffusion potential and the barrier height have been calculated as 0.78 V and 0.88 eV, respectively. From the I–V measurement of the diode under illumination, short circuit current and open circuit voltage have been extracted as 1.70 μA and 240 mV, respectively.

The novel transparent sputtered p-type CuO thin films and Ag/p-CuO/n-Si Schottky diode applications

Directory of Open Access Journals (Sweden)

A. Tombak

2015-01-01

Full Text Available In the current paper, the physical properties and microelectronic parameters of direct current (DC sputtered p-type CuO film and diode have been investigated. The film of CuO as oxide and p-type semiconductor is grown onto glass and n-Si substrates by reactive DC sputtering at 250 °C. After deposition, a post-annealing procedure is applied at various temperatures in ambient. Through this research, several parameters are determined such structural, optical and electrical magnitudes. The thickness of CuO thin films goes from 122 to 254 nm. A (111-oriented cubic crystal structure is revealed by X-ray analysis. The grain size is roughly depending on the post-annealing temperature, it increases with temperature within the 144–285 nm range. The transmittance reaches 80% simultaneously in visible and infrared bands. The optical band gap is varied between 1.99 and 2.52 eV as a result of annealing temperature while the resistivity and the charge carrier mobility decrease with an increase in temperature from 135 to 14 Ω cm and 0.92 to 0.06 cm2/Vs, respectively. The surface of samples is homogenous, bright dots are visible when temperature reaches the highest value. As a diode, Ag/CuO/n-Si exhibits a non-ideal behavior and the ideality factor is about 3.5. By Norde method, the barrier height and the series resistance are extracted and found to be 0.96 V and 86.6 Ω respectively.

Low Energy X-Ray and γ-Ray Detectors Fabricated on n-Type 4H-SiC Epitaxial Layer

Science.gov (United States)

Mandal, Krishna C.; Muzykov, Peter G.; Chaudhuri, Sandeep K.; Terry, J. Russell

2013-08-01

Schottky barrier diode (SBD) radiation detectors have been fabricated on n-type 4H-SiC epitaxial layers and evaluated for low energy x- and γ-rays detection. The detectors were found to be highly sensitive to soft x-rays in the 50 eV to few keV range and showed 2.1 % energy resolution for 59.6 keV gamma rays. The response to soft x-rays for these detectors was significantly higher than that of commercial off-the-shelf (COTS) SiC UV photodiodes. The devices have been characterized by current-voltage (I-V) measurements in the 94-700 K range, thermally stimulated current (TSC) spectroscopy, x-ray diffraction (XRD) rocking curve measurements, and defect delineating chemical etching. I-V characteristics of the detectors at 500 K showed low leakage current ( nA at 200 V) revealing a possibility of high temperature operation. The XRD rocking curve measurements revealed high quality of the epitaxial layer exhibiting a full width at half maximum (FWHM) of the rocking curve 3.6 arc sec. TSC studies in a wide range of temperature (94-550 K) revealed presence of relatively shallow levels ( 0.25 eV) in the epi bulk with a density 7×1013 cm-3 related to Al and B impurities and deeper levels located near the metal-semiconductor interface.

Comparison of electrical characteristic between AlN/GaN and AlGaN/GaN heterostructure Schottky diodes

International Nuclear Information System (INIS)

Lü Yuan-Jie; Feng Zhi-Hong; Gu Guo-Dong; Dun Shao-Bo; Yin Jia-Yun; Han Ting-Ting; Cai Shu-Jun; Lin Zhao-Jun

2014-01-01

Ni/Au Schottky contacts on AlN/GaN and AlGaN/GaN heterostructures are fabricated. Based on the measured current—voltage and capacitance—voltage curves, the electrical characteristics of AlN/GaN Schottky diode, such as Schottky barrier height, turn-on voltage, reverse breakdown voltage, ideal factor, and the current-transport mechanism, are analyzed and then compared with those of an AlGaN/GaN diode by self-consistently solving Schrödinger's and Poisson's equations. It is found that the dislocation-governed tunneling is dominant for both AlN/GaN and AlGaN/GaN Schottky diodes. However, more dislocation defects and a thinner barrier layer for AlN/GaN heterostructure results in a larger tunneling probability, and causes a larger leakage current and lower reverse breakdown voltage, even though the Schottky barrier height of AlN/GaN Schottky diode is calculated to be higher that of an AlGaN/GaN diode. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

Low temperature p-type doping of (Al)GaN layers using ammonia molecular beam epitaxy for InGaN laser diodes

Energy Technology Data Exchange (ETDEWEB)

Malinverni, M., E-mail: marco.malinverni@epfl.ch; Lamy, J.-M.; Martin, D.; Grandjean, N. [ICMP, École Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne (Switzerland); Feltin, E.; Dorsaz, J. [NOVAGAN AG, CH-1015 Lausanne (Switzerland); Castiglia, A.; Rossetti, M.; Duelk, M.; Vélez, C. [EXALOS AG, CH-8952 Schlieren (Switzerland)

2014-12-15

We demonstrate state-of-the-art p-type (Al)GaN layers deposited at low temperature (740 °C) by ammonia molecular beam epitaxy (NH{sub 3}-MBE) to be used as top cladding of laser diodes (LDs) with the aim of further reducing the thermal budget on the InGaN quantum well active region. Typical p-type GaN resistivities and contact resistances are 0.4 Ω cm and 5 × 10{sup −4} Ω cm{sup 2}, respectively. As a test bed, we fabricated a hybrid laser structure emitting at 400 nm combining n-type AlGaN cladding and InGaN active region grown by metal-organic vapor phase epitaxy, with the p-doped waveguide and cladding layers grown by NH{sub 3}-MBE. Single-mode ridge-waveguide LD exhibits a threshold voltage as low as 4.3 V for an 800 × 2 μm{sup 2} ridge dimension and a threshold current density of ∼5 kA cm{sup −2} in continuous wave operation. The series resistance of the device is 6 Ω and the resistivity is 1.5 Ω cm, confirming thereby the excellent electrical properties of p-type Al{sub 0.06}Ga{sub 0.94}N:Mg despite the low growth temperature.

DLTS spectra of silicon diodes with p+-n-junction irradiated with high energy krypton ions

Directory of Open Access Journals (Sweden)

Nikolai A. Poklonski

2016-06-01

Full Text Available p+-n-Diodes have been studied. The diodes were manufactured on wafers (thickness 460 μm, (111 plane of uniformly phosphorus doped float-zone-grown single-crystal silicon. The resistivity of silicon was 90 Ω cm and the phosphorus concentration was 5×1013 cm−3. The diodes were irradiated with 250 MeV krypton ions. The irradiation fluence was 108 cm−2. Deep-level transient spectroscopy (DLTS was used to examine the defects induced by high energy krypton ion implantation. The DLTS spectra were recorded at a frequency of 1 MHz in the 78–290 K temperature range. The capacity-voltage characteristics have been measured at a reverse bias voltage from 0 to −19 V at a frequency of 1 MHz. We show that the main irradiation-induced defects are A-centers and divacancies. The behavior of DLTS spectra in the 150–260 K temperature range depends essentially on the emission voltage Ue. The variation of Ue allows us to separate the contributions of different defects into the DLTS spectrum in the 150–260 K temperature range. We show that, in addition to A-centers and divacancies, irradiation produces multivacancy complexes with the energy level Et = Ec−(0.5±0.02 eV and an electron capture cross section of ~4×10–13 cm2.

BPM Electronics based on Compensated Diode Detectors – Results from development Systems

CERN Document Server

Gasior, M; Steinhagen, RJ

2012-01-01

High resolution beam position monitor (BPM) electronics based on diode peak detectors is being developed for processing signals from button BPMs embedded into future LHC collimators. Its prototypes were measured in a laboratory as well as with beam signals from the collimator BPM installed on the SPS and with LHC BPMs. Results from these measurements are presented and discussed.

P-type silicon surface barrier detector used for x-ray dosimetry

International Nuclear Information System (INIS)

Yamamoto, Hisao; Hatakeyama, Satoru; Norimura, Toshiyuki; Tsuchiya, Takehiko

1983-01-01

Responses to X-rays of a P-type surface barrier detector fabricated in our laboratory were studied, taking into consideration the dependence on the temperature in order to examine its applicability to dosimetry of short-range radiation. The study was also made in the case of N-type surface barrier detector. At room temperature, the short-circuit current increased linearly with exposure dose rate (15 - 50 R/min) for N- and P-type detectors. The open-circuit voltage showed a nonlinear dependence. With increasing temperature, the short-circuit current for the N-type detector was approximately constant up to 30 0 C and then decreased, though the open-circuit voltage decreased linearly. For the P- type detector, both open-circuit voltage and short-circuit current decreased almost linearly with increasing temperature. While a P-type detector is still open to some improvements, these results indicate that it can be used as a dosimeter. (author)

State of the art in semiconductor detectors

International Nuclear Information System (INIS)

Rehak, P.; Gatti, E.

1990-01-01

The state of the art in semiconductor detectors for elementary particle physics and X-ray astronomy is briefly reviewed. Semiconductor detectors are divided into two groups; i) classical semiconductor diode detectors and ii) semiconductor memory detectors. Principles of signal formation for both groups of detectors are described and their performance is compared. New developments of silicon detectors are reported here. (orig.)

Influence of electron irradiation at elevated temperatures on silicon diffuse structures with p-n-junctions

International Nuclear Information System (INIS)

Korshunov, F.P.; Marchenko, I.G.

2012-01-01

The behavior of the lifetime of nonequilibrium carriers (τ), reverse current (I R ), and forward voltage drop (U F ) in industrial p + -n-n + -diodes irradiated with electrons (E=6 MeV) at temperatures for the range T irr = 20-400 Celsius degree was investigated. The tests were conducted on the samples manufactured on phosphorous doped single-crystal Si during the CZ growing process of ingot (KAF) and using the nuclear reactions (KOF). The investigation showed that the problem to reach smaller τ values with a minimal increase of U F and I R in fast diodes can be solved by means of selection of a technological irradiation temperature regime. It was determined that the comparable changes of the τ value in the diode base area, the best trade-off of U F and I R in the samples (KAF) is observed at T irr = 300 Celsius degree, and in the KOF samples at T irr = 350 Celsius degree. (authors)

Development of a semiconductor neutron dosimeter with a PIN diode

International Nuclear Information System (INIS)

Kim, Seungho; Lee, Namho; Cho, Jaiwan; Youk, Geunuck

2004-01-01

When a Si PIN diode is exposed to fast neutrons, it produces displacement in Si lattice structure of the diode. Defects induced from structural dislocation become effective recombination centers for carriers which pass through the base of a PIN diode. Hence, increasing the resistivity of the diode decreases the current for the applied forward voltage. This paper involves the development of a neutron sensor based on the phenomena of the displacement effect damaged by neutron exposure. The neutron effect on the semiconductor was analyzed, and multi PIN diode arrays with various intrinsic layer (I layer) thicknesses and cross sections were fabricated. Under irradiation tests with a neutron beam, the manufactured diodes have good characteristics of linearity in a neutron irradiation experiment and give results that the increase of thickness of I layer and the decrease of the cross-section of the PIN diodes improve the sensitivity. Newly developed PIN diodes with a thicker I layer and various cross sections were retested and showed the best neutron sensitivity in the condition that the I layer thickness was similar to the length of a side of the cross-section. On the basis of two test results, final PIN diodes with a rectangular shape were manufactured and the characteristics for neutron detectors were analyzed through the neutron beam test using the on-line electronic dosimetry system. The developed PIN diode shows a good linearity to absorbed dose in the range of 0 to 1,000cGy (Tissue) and its neutron sensitivity is 13 mV/cGy at a constant current of 5 mA, that is three higher than that of similar commercially developed neutron detectors. Moreover the device shows less dependency on the orientation of the neutron beam and a considerable stability in an annealing test for a long period. (author)

Measurement and deconvolution of detector response time for short HPM pulses: Part 1, Microwave diodes

International Nuclear Information System (INIS)

Bolton, P.R.

1987-06-01

A technique is described for measuring and deconvolving response times of microwave diode detection systems in order to generate corrected input signals typical of an infinite detection rate. The method has been applied to cases of 2.86 GHz ultra-short HPM pulse detection where pulse rise time is comparable to that of the detector; whereas, the duration of a few nanoseconds is significantly longer. Results are specified in terms of the enhancement of equivalent deconvolved input voltages for given observed voltages. The convolution integral imposes the constraint of linear detector response to input power levels. This is physically equivalent to the conservation of integrated pulse energy in the deconvolution process. The applicable dynamic range of a microwave diode is therefore limited to a smaller signal region as determined by its calibration

Experience from operating germanium detectors in GERDA

International Nuclear Information System (INIS)

Palioselitis, Dimitrios

2015-01-01

Phase I of the Germanium Detector Array (GERDA) experiment, searching for the neutrinoless double beta (0νββ) decay of 76 Ge, was completed in September 2013. The most competitive half-life lower limit for the 0νββ decay of 76 Ge was set (T- 0ν 1/2 > 2.1 · 10 25 yr at 90% C.L.). GERDA operates bare Ge diodes immersed in liquid argon. During Phase I, mainly refurbished semi-coaxial high purity Ge detectors from previous experiments were used. The experience gained with handling and operating bare Ge diodes in liquid argon, as well as the stability and performance of the detectors during GERDA Phase I are presented. Thirty additional new enriched BEGe-type detectors were produced and will be used in Phase II. A subgroup of these detectors has already been used successfully in GERDA Phase I. The present paper gives an overview of the production chain of the new germanium detectors, the steps taken to minimise the exposure to cosmic radiation during manufacturing, and the first results of characterisation measurements in vacuum cryostats. (paper)

Use of GaN as a Scintillating Ionizing Radiation Detector

Science.gov (United States)

Wensman, Johnathan; Guardala, Noel; Mathur, Veerendra; Alasagas, Leslie; Vanhoy, Jeffrey; Statham, John; Marron, Daniel; Millett, Marshall; Marsh, Jarrod; Currie, John; Price, Jack

2017-09-01

Gallium nitride (GaN) is a III/V direct bandgap semiconductor which has been used in light emitting diodes (LEDs) since the 1990s. Currently, due to a potential for increased efficiency, GaN is being investigated as a replacement for silicon in power electronics finding potential uses ranging from data centers to electric vehicles. In addition to LEDs and power electronics though, doped GaN can be used as a gamma insensitive fast neutron detector due to the direct band-gap, light propagation properties, and response to ionizing radiations. Investigation of GaN as a semiconductor scintillator for use in a radiation detection system involves mapping the response function of the detector crystal over a range of photon and neutron energies, and measurements of light generation in the GaN crystal due to proton, alpha, and nitrogen projectiles. In this presentation we discuss the measurements made to date, and plausible interpretations of the response functions. This work funded in part by the Naval Surface Warfare Center, Carderock Division In-house Laboratory Independent Research program.

A hole modulator for InGaN/GaN light-emitting diodes

Science.gov (United States)

Zhang, Zi-Hui; Kyaw, Zabu; Liu, Wei; Ji, Yun; Wang, Liancheng; Tan, Swee Tiam; Sun, Xiao Wei; Demir, Hilmi Volkan

2015-02-01

The low p-type doping efficiency of the p-GaN layer has severely limited the performance of InGaN/GaN light-emitting diodes (LEDs) due to the ineffective hole injection into the InGaN/GaN multiple quantum well (MQW) active region. The essence of improving the hole injection efficiency is to increase the hole concentration in the p-GaN layer. Therefore, in this work, we have proposed a hole modulator and studied it both theoretically and experimentally. In the hole modulator, the holes in a remote p-type doped layer are depleted by the built-in electric field and stored in the p-GaN layer. By this means, the overall hole concentration in the p-GaN layer can be enhanced. Furthermore, the hole modulator is adopted in the InGaN/GaN LEDs, which reduces the effective valance band barrier height for the p-type electron blocking layer from ˜332 meV to ˜294 meV at 80 A/cm2 and demonstrates an improved optical performance, thanks to the increased hole concentration in the p-GaN layer and thus the improved hole injection into the MQWs.

Reverse Current Characteristics of InP Gunn Diodes for W-Band Waveguide Applications.

Science.gov (United States)

Kim, Hyun-Seok; Heo, Jun-Woo; Chol, Seok-Gyu; Ko, Dong-Sik; Rhee, Jin-Koo

2015-07-01

InP is considered as the most promising material for millimeter-wave laser-diode applications owing to its superior noise performance and wide operating frequency range of 75-110 GHz. In this study, we demonstrate the fabrication of InP Gunn diodes with a current-limiting structure using rapid thermal annealing to modulate the potential height formed between an n-type InP active layer and a cathode contact. We also explore the reverse current characteristics of the InP Gunn diodes. Experimental results indicate a maximum anode current and an oscillation frequency of 200 mA and 93.53 GHz, respectively. The current-voltage characteristics are modeled by considering the Schottky and ohmic contacts, work function variations, negative differential resistance (NDR), and tunneling effect. Although no direct indication of the NDR is observed, the simulation results match the measured data well. The modeling results show that the NDR effect is always present but is masked because of electron emission across the shallow Schottky barrier.

Comprehensive study of the electronic and optical behavior of highly degenerate p-type Mg-doped GaN and AlGaN

Energy Technology Data Exchange (ETDEWEB)

Gunning, Brendan P.; Fabien, Chloe A. M.; Merola, Joseph J.; Clinton, Evan A.; Doolittle, W. Alan, E-mail: alan.doolittle@ece.gatech.edu [School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332 (United States); Wang, Shuo; Fischer, Alec M.; Ponce, Fernando A. [Department of Physics, Arizona State University, Tempe, Arizona 85287 (United States)

2015-01-28

The bulk and 2-dimensional (2D) electrical transport properties of heavily Mg-doped p-type GaN films grown on AlN buffer layers by Metal Modulated Epitaxy are explored. Distinctions are made between three primary p-type conduction mechanisms: traditional valence band conduction, impurity band conduction, and 2D conduction within a 2D hole gas at a hetero-interface. The bulk and 2D contributions to the overall carrier transport are identified and the relative contributions are found to vary strongly with growth conditions. Films grown with III/V ratio less than 1.5 exhibit high hole concentrations exceeding 2 × 10{sup 19} cm{sup −3} with effective acceptor activation energies of 51 meV. Films with III/V ratios greater than 1.5 exhibit lower overall hole concentrations and significant contributions from 2D transport at the hetero-interface. Films grown with III/V ratio of 1.2 and Mg concentrations exceeding 2 × 10{sup 20} cm{sup −3} show no detectable inversion domains or Mg precipitation. Highly Mg-doped p-GaN and p-AlGaN with Al fractions up to 27% similarly exhibit hole concentrations exceeding 2 × 10{sup 19} cm{sup −3}. The p-GaN and p-Al{sub 0.11}Ga{sub 0.89}N films show broad ultraviolet (UV) photoluminescence peaks, which intercept the valence band, supporting the presence of a Mg acceptor band. Finally, a multi-quantum-well light-emitting diode (LED) and p-i-n diode are grown, both of which demonstrate rectifying behavior with turn-on voltages of 3–3.5 V and series resistances of 6–10 Ω without the need for any post-metallization annealing. The LED exhibits violet-blue luminescence at 425 nm, while the p-i-n diode shows UV luminescence at 381 nm, and both devices still show substantial light emission even when submerged in liquid nitrogen at 77 K.

Comprehensive study of the electronic and optical behavior of highly degenerate p-type Mg-doped GaN and AlGaN

International Nuclear Information System (INIS)

Gunning, Brendan P.; Fabien, Chloe A. M.; Merola, Joseph J.; Clinton, Evan A.; Doolittle, W. Alan; Wang, Shuo; Fischer, Alec M.; Ponce, Fernando A.

2015-01-01

The bulk and 2-dimensional (2D) electrical transport properties of heavily Mg-doped p-type GaN films grown on AlN buffer layers by Metal Modulated Epitaxy are explored. Distinctions are made between three primary p-type conduction mechanisms: traditional valence band conduction, impurity band conduction, and 2D conduction within a 2D hole gas at a hetero-interface. The bulk and 2D contributions to the overall carrier transport are identified and the relative contributions are found to vary strongly with growth conditions. Films grown with III/V ratio less than 1.5 exhibit high hole concentrations exceeding 2 × 10 19 cm −3 with effective acceptor activation energies of 51 meV. Films with III/V ratios greater than 1.5 exhibit lower overall hole concentrations and significant contributions from 2D transport at the hetero-interface. Films grown with III/V ratio of 1.2 and Mg concentrations exceeding 2 × 10 20 cm −3 show no detectable inversion domains or Mg precipitation. Highly Mg-doped p-GaN and p-AlGaN with Al fractions up to 27% similarly exhibit hole concentrations exceeding 2 × 10 19 cm −3 . The p-GaN and p-Al 0.11 Ga 0.89 N films show broad ultraviolet (UV) photoluminescence peaks, which intercept the valence band, supporting the presence of a Mg acceptor band. Finally, a multi-quantum-well light-emitting diode (LED) and p-i-n diode are grown, both of which demonstrate rectifying behavior with turn-on voltages of 3–3.5 V and series resistances of 6–10 Ω without the need for any post-metallization annealing. The LED exhibits violet-blue luminescence at 425 nm, while the p-i-n diode shows UV luminescence at 381 nm, and both devices still show substantial light emission even when submerged in liquid nitrogen at 77 K

Studies of defects in neutron-irradiated p-type silicon by admittance measurements of n+-p diodes

International Nuclear Information System (INIS)

Tokuda, Y.; Usami, A.

1978-01-01

Defects introduced in p-type silicon by neutron irradiation were studied by measuring the admittance of n + -p diodes. It was shown that the energy levels and capture cross sections estimated from the temperature dependence of the admittance had some uncertainty due to the temperature dependence of the concentration of free carriers in the bulk and the high-frequency-junction capacitance. So, we presented the method of determination of the energy levels, capture cross sections, and concentrations of defects from the frequency dependence of the admittance. This method consists of the measurements of G/ω and C as a function of frequency. From this method, assuming that capture cross sections are independent of temperature, the energy levels of E/sub v/+0.16 and E/sub v/+0.36 eV were obtained. For these defects, the calculated values of the hole capture cross section were 2.4 x 10 -14 and 3.7 x 10 -14 cm 2 , respectively. Comparing with other published data, the energy level of E/sub v/+0.36 eV was found to be correlated with the divacancy

Beam related response of in vivo diode detectors for external radiotherapy

Energy Technology Data Exchange (ETDEWEB)

Baci, Syrja, E-mail: sbarci2013@gmail.com [Department of Physics, Faculty of Natural Sciences, University of Gjirokastra, “Eqrem Çabej” (Albania); Telhaj, Ervis [Department of Medical Physics, Hygeia Hospital Tirana (Albania); Malkaj, Partizan [Department of Physical Engineering, Polytechnic University, Tirana (Albania)

2016-03-25

In Vivo Dosimetry (IVD) is a set of methods used in cancer treatment clinics to determine the real dose of radiation absorbed by target volume in a patient’s body. IVD has been widely implemented in radiotherapy treatment centers and is now recommended part of Quality Assurance program by many International health and radiation organizations. Because of cost and lack of specialized personnel, IVD has not been practiced as yet, in Albanian radiotherapy clinics. At Hygeia Hospital Tirana, patients are irradiated with high energy photons generated by Elekta Synergy Accelerators. We have recently started experimenting with the purpose of establishing an IVD practice at this hospital. The first set of experiments was aimed at calibration of diodes that are going to be used for IVD. PMMA, phantoms by PTW were used to calibrate p – type Si, semiconductor diode dosimeters, made by PTW Freiburg for entrance dose. Response of the detectors is affected by energy of the beam, accumulated radiation dose, dose rate, temperature, angle against the beam axis, etc. Here we present the work done for calculating calibration factor and correction factors of source to surface distance, field size, and beam incidence for the entrance dose for both 6 MV photon beam and 18 MV photon beam. Dependence of dosimeter response was found to be more pronounced with source to surface distance as compared to other variables investigated.

Beam related response of in vivo diode detectors for external radiotherapy

International Nuclear Information System (INIS)

Baci, Syrja; Telhaj, Ervis; Malkaj, Partizan

2016-01-01

In Vivo Dosimetry (IVD) is a set of methods used in cancer treatment clinics to determine the real dose of radiation absorbed by target volume in a patient’s body. IVD has been widely implemented in radiotherapy treatment centers and is now recommended part of Quality Assurance program by many International health and radiation organizations. Because of cost and lack of specialized personnel, IVD has not been practiced as yet, in Albanian radiotherapy clinics. At Hygeia Hospital Tirana, patients are irradiated with high energy photons generated by Elekta Synergy Accelerators. We have recently started experimenting with the purpose of establishing an IVD practice at this hospital. The first set of experiments was aimed at calibration of diodes that are going to be used for IVD. PMMA, phantoms by PTW were used to calibrate p – type Si, semiconductor diode dosimeters, made by PTW Freiburg for entrance dose. Response of the detectors is affected by energy of the beam, accumulated radiation dose, dose rate, temperature, angle against the beam axis, etc. Here we present the work done for calculating calibration factor and correction factors of source to surface distance, field size, and beam incidence for the entrance dose for both 6 MV photon beam and 18 MV photon beam. Dependence of dosimeter response was found to be more pronounced with source to surface distance as compared to other variables investigated.

Testbeam and laboratory test results of irradiated 3D CMS pixel detectors

Energy Technology Data Exchange (ETDEWEB)

Bubna, Mayur [Purdue University, Department of Physics, West Lafayette, IN 47907-1396 (United States); Purdue University, School of Electrical and Computer Engineering, West Lafayette, IN 47907-1396 (United States); Alagoz, Enver, E-mail: enver.alagoz@cern.ch [Purdue University, Department of Physics, West Lafayette, IN 47907-1396 (United States); Cervantes, Mayra; Krzywda, Alex; Arndt, Kirk [Purdue University, Department of Physics, West Lafayette, IN 47907-1396 (United States); Obertino, Margherita; Solano, Ada [Istituto Nazionale di Fisica Nucleare, Sezione di Torino, 10125 Torino (Italy); Dalla Betta, Gian-Franco [INFN Padova (Gruppo Collegato di Trento) (Italy); Dipartimento di Ingegneria e Scienzadella Informazione, Universitá di Trento, I-38123 Povo di Trento (Italy); Menace, Dario; Moroni, Luigi [Istituto Nazionale di Fisica Nucleare, Sezione di Milano Bicocca (Italy); Universitá degli Studi di Milano Bicocca, 20126 Milano (Italy); Uplegger, Lorenzo; Rivera, Ryan [Fermi National Accelerator Laboratory, Batavia, IL 60510-0500 (United States); Osipenkov, Ilya [Texas A and M University, Department of Physics, College Station, TX 77843-4242 (United States); Andresen, Jeff [Fermi National Accelerator Laboratory, Batavia, IL 60510-0500 (United States); Bolla, Gino; Bortoletto, Daniela [Purdue University, Department of Physics, West Lafayette, IN 47907-1396 (United States); Boscardin, Maurizio [Centro per i Materiali e i Microsistemi Fondazione Bruno Kessler (FBK), Trento, I-38123 Povo di Trento (Italy); Marie Brom, Jean [Strasbourg IPHC, Institut Pluriedisciplinaire Hubert Curien, F-67037 Strasbourg Cedex (France); Brosius, Richard [State University of New York at Buffalo (SUNY), Department of Physics, Buffalo, NY 14260-1500 (United States); Chramowicz, John [Fermi National Accelerator Laboratory, Batavia, IL 60510-0500 (United States); and others

2013-12-21

The CMS silicon pixel detector is the tracking device closest to the LHC p–p collisions, which precisely reconstructs the charged particle trajectories. The planar technology used in the current innermost layer of the pixel detector will reach the design limit for radiation hardness at the end of Phase I upgrade and will need to be replaced before the Phase II upgrade in 2020. Due to its unprecedented performance in harsh radiation environments, 3D silicon technology is under consideration as a possible replacement of planar technology for the High Luminosity-LHC or HL-LHC. 3D silicon detectors are fabricated by the Deep Reactive-Ion-Etching (DRIE) technique which allows p- and n-type electrodes to be processed through the silicon substrate as opposed to being implanted through the silicon surface. The 3D CMS pixel devices presented in this paper were processed at FBK. They were bump bonded to the current CMS pixel readout chip, tested in the laboratory, and testbeams carried out at FNAL with the proton beam of 120 GeV/c. In this paper we present the laboratory and beam test results for the irradiated 3D CMS pixel devices. -- Highlights: •Pre-irradiation and post-irradiation electrical properties of 3D sensors and 3D diodes from various FBK production batches were measured and analyzed. •I–T measurements of gamma irradiated diodes were analyzed to understand leakage current generation mechanism in 3D diodes. •Laboratory measurements: signal to noise ratio and charge collection efficiency of 3D sensors before and after irradiation. •Testbeam measurements: pre- and post-irradiation pixel cell efficiency and position resolution of 3D sensors.

p-Type modulation doped InGaN/GaN dot-in-a-wire white-light-emitting diodes monolithically grown on Si(111).

Science.gov (United States)

Nguyen, H P T; Zhang, S; Cui, K; Han, X; Fathololoumi, S; Couillard, M; Botton, G A; Mi, Z

2011-05-11

Full-color, catalyst-free InGaN/GaN dot-in-a-wire light-emitting diodes (LEDs) were monolithically grown on Si(111) by molecular beam epitaxy, with the emission characteristics controlled by the dot properties in a single epitaxial growth step. With the use of p-type modulation doping in the dot-in-a-wire heterostructures, we have demonstrated the most efficient phosphor-free white LEDs ever reported, which exhibit an internal quantum efficiency of ∼56.8%, nearly unaltered CIE chromaticity coordinates with increasing injection current, and virtually zero efficiency droop at current densities up to ∼640 A/cm(2). The remarkable performance is attributed to the superior three-dimensional carrier confinement provided by the electronically coupled dot-in-a-wire heterostructures, the nearly defect- and strain-free GaN nanowires, and the significantly enhanced hole transport due to the p-type modulation doping.

Fabrication and characterization of high-brightness light emitting diodes based on n-ZnO nanorods grown by a low-temperature chemical method on p-4H-SiC and p-GaN

International Nuclear Information System (INIS)

Alvi, N H; Riaz, M; Tzamalis, G; Nur, O; Willander, M

2010-01-01

Light emitting diodes (LEDs) based on n-ZnO nanorods (NRs)/p-4H-SiC and n-ZnO (NRs)/p-GaN were fabricated and characterized. For the two LEDs the ZnO NRs were grown using a low temperature (<100 °C) aqueous chemical growth (ACG) technique. Both LEDs showed very bright nearly white light electroluminescence (EL) emission. The observed luminescence was a result of the combination of three emission lines composed of violet-blue, green and orange-red peaks observed from the two LEDs. Room temperature photoluminescence (PL) was also measured and consistency with EL was observed. It was found that the green and violet-blue peaks are red-shifted while the orange peak is blue-shifted in the EL measurement. It was also found that due to the effect of the GaN substrate the violet-blue peak in the EL measurement is more red-shifted in n-ZnO (NRs)/p-GaN LEDs as compared to n-ZnO (NRs)/p-4H-SiC LEDs

Proto-I switching and diode studies

International Nuclear Information System (INIS)

Prestwich, K.R.; Miller, P.A.; McDaniel, D.H.; Poukey, J.W.; Widner, M.M.; Goldstein, S.A.

1975-01-01

Proto-I is a 3 MV, 800 kA, 24 ns electron beam accelerator that is under development at Sandia Laboratories. It represents an initial effort to develop a scalable technology that is applicable to accelerators for electron beam driven, inertial confinement fusion studies. Energy is supplied to each of the two diodes from six oil-dielectric Blumlein transmission lines (PFL) operating in parallel. A Marx generator charges three intermediate storage, water-dielectric capacitors which subsequently transfer the stored energy to the PFL. The discharge of the PFL is initiated by the simultaneous closure of 12 triggered oil-dielectric rail switches. Data will be presented on the operation of these multichannel switches. The two diodes have a common anode. Cathode diameters can be varied from 10 to 60 cm. Results of initial diode experiments and comparisons with theory are discussed. Plasma filled diode experiments are also reported, indicating pinch collapse velocities in excess of 10 9 cm/s

Site-controlled InGaN/GaN single-photon-emitting diode

Energy Technology Data Exchange (ETDEWEB)

Zhang, Lei; Deng, Hui, E-mail: dengh@umich.edu [Department of Physics, University of Michigan, 450 Church St., Ann Arbor, Michigan 48109 (United States); Teng, Chu-Hsiang; Ku, Pei-Cheng, E-mail: peicheng@umich.edu [Department of Electrical Engineering and Computer Science, University of Michigan, 1301 Beal Ave., Ann Arbor, Michigan 48109 (United States)

2016-04-11

We report single-photon emission from electrically driven site-controlled InGaN/GaN quantum dots. The device is fabricated from a planar light-emitting diode structure containing a single InGaN quantum well, using a top-down approach. The location, dimension, and height of each single-photon-emitting diode are controlled lithographically, providing great flexibility for chip-scale integration.

Temperature-Dependent Electrical Characteristics of Au/Si3N4/4H n-SiC MIS Diode

Science.gov (United States)

Yigiterol, F.; Güllü, H. H.; Bayraklı, Ö.; Yıldız, D. E.

2018-03-01

Electrical characteristics of the Au/Si3N4/4H n-SiC metal-insulator-semiconductor (MIS) diode were investigated under the temperature, T , interval of 160-400 K using current-voltage (I-V), capacitance-voltage ( C {-} V ) and conductance-voltage ( G/ω {-} V ) measurements. Firstly, the Schottky diode parameters as zero-bias barrier height ( Φ_{B0} ) and ideality factor ( n ) were calculated according to the thermionic emission (TE) from forward bias I-V analysis in the whole working T . Experimental results showed that the values of Φ_{B0} were in increasing behavior with increasing T while n values decreased with inverse proportionality in n versus Φ_{{{{B}}0}} plot. Therefore, the non-ideal I-V behavior with inhomogeneous barrier height (BH) formation has been discussed under the assumption of Gaussian distribution (GD). From the GD of BHs, the mean BH was found to be about 1.40 eV with 0.1697 standard deviation and the modified Richardson constant A^{*} of this diode was obtained as 141.65 A/cm2 K2 in good agreement with the literature (the theoretical value of A^{*} is 137.21 A/cm2 K2). The relationship between Φ_{B0} and n showed an abnormal I-V behavior depending on T , and it was modeled by TE theory with GD of BH due to the effect in inhomogeneous BH at the interface. Secondly, according to Cheung's model, series resistance, R_{{S}} values were calculated in the T range of 160-400 K and these values were found to decrease with increasing T . Finally, the density of interface states, D_{{it}} was calculated and the T dependence of energy distribution of D_{{it}} profiles determined the forward I {-} V measurements by taking into account the bias dependence of the effective BH, Φ_{{e}} and n . D_{{it}} were also calculated according to the Hill-Coleman method from C {-} V and G/ω {-} V analysis. Furthermore, the variation of D_{{it}} as a function of frequency, f and T were determined.

A hole accelerator for InGaN/GaN light-emitting diodes

Science.gov (United States)

Zhang, Zi-Hui; Liu, Wei; Tan, Swee Tiam; Ji, Yun; Wang, Liancheng; Zhu, Binbin; Zhang, Yiping; Lu, Shunpeng; Zhang, Xueliang; Hasanov, Namig; Sun, Xiao Wei; Demir, Hilmi Volkan

2014-10-01

The quantum efficiency of InGaN/GaN light-emitting diodes (LEDs) has been significantly limited by the insufficient hole injection, and this is caused by the inefficient p-type doping and the low hole mobility. The low hole mobility makes the holes less energetic, which hinders the hole injection into the multiple quantum wells (MQWs) especially when a p-type AlGaN electron blocking layer (EBL) is adopted. In this work, we report a hole accelerator to accelerate the holes so that the holes can obtain adequate kinetic energy, travel across the p-type EBL, and then enter the MQWs more efficiently and smoothly. In addition to the numerical study, the effectiveness of the hole accelerator is experimentally shown through achieving improved optical output power and reduced efficiency droop for the proposed InGaN/GaN LED.

T-CAD analysis of electric fields in n-in-p silicon strip detectors in dependence on the p-stop pattern and doping concentration

CERN Document Server

Printz, Martin

2015-01-01

However, n-in-p detectors necessarily need an isolation layer of the n+ strips due to an accumula- tion layer of electrons caused by positive charge in the SiO$_2$ at the sensor surface. An additional implantation of acceptors like boron between the n+ strips cuts the co...

Measurement of Rectal Radiation dose in the Patients with Uterine Cervix fencer using In Vivo Dosimetry(Diode Detector)

International Nuclear Information System (INIS)

Kim, Sung Kee; Kim, Wan Sun

2004-01-01

A rectum and a bladder should be carefully considered in order to decrease side effects when HDR patient of uterine cervix cancer. Generally speaking, the value of dosimeter at a rectum and a bladder only depends on the value of a planning equipment, while some analyses of the value of dosimetry at rectum with TLD has been reported Or the contrary, it is hardly to find a report with in vivo dosimetry(diode detector). On this thesis, we would like to suggest the following. When a patient of uterine cervix cancer is in therapy, it is helpful to put a diode detector inside of a rectum in order to measure the rectal dose Based upon the result of the dosimetry, the result can be used as basic data at decreasing side effects. Six patients of uterine cervix cancer(four with tandem and ovoid, one with cylinder, and the other one with tandem and cylinder) who had been irradiated with HDR. Ir-192 totally 28 times from February 2003 to June 2003. We irradiated twice in the same distant spots with anterior film and lateral film whenever we measured with a diode detector. Then we did planning and compared each film. The result of the measurement 4 patients with a diode detector is the following. The average and deviation from 3 patients with tandem and ovoid were 274±13.4 cGy, from 1 patient with tandem and ovoid were 126.1±7.2 cGy, from 1 patient with cylinder were 99.7±7.1 cGy, and from 1 patient with tandem and cylinder were 77.7±11.5 cGy. It is difficult to predict how the side effect of a rectum since the result of measurement with a diode detector depends on the state of a rectum. According to the result of the study, it is effective to use a TLD or an in vivo dosimetry and measure a rectum in order to consider the side effect. It is very necessary to decrease the amount of irradiation by controlling properly the duration of the irradiation and gauze packing, and by using shield equipment especially when side effects can be expected.

A gas ionisation Direct-STIM detector for MeV ion microscopy

International Nuclear Information System (INIS)

Norarat, Rattanaporn; Guibert, Edouard; Jeanneret, Patrick; Dellea, Mario; Jenni, Josef; Roux, Adrien; Stoppini, Luc; Whitlow, Harry J.

2015-01-01

Direct-Scanning Transmission Ion Microscopy (Direct-STIM) is a powerful technique that yields structural information in sub-cellular whole cell imaging. Usually, a Si p-i-n diode is used in Direct-STIM measurements as a detector. In order to overcome the detrimental effects of radiation damage which appears as a broadening in the energy resolution, we have developed a gas ionisation detector for use with a focused ion beam. The design is based on the ETH Frisch grid-less off-axis Geiger–Müller geometry. It is developed for use in a MeV ion microscope with a standard Oxford Microbeams triplet lens and scanning system. The design has a large available solid angle for other detectors (e.g. proton induced fluorescence). Here we report the performance for imaging ReNcells VM with μm resolution where energy resolutions of <24 keV fwhm could be achieved for 1 MeV protons using isobutane gas

In 0.35Ga 0.65P light-emitting diodes grown by gas-source MBE

Science.gov (United States)

Masselink, W. Ted; Zachau, Martin

1993-02-01

This paper describes the growth and optical characteristics of In yGa 1- yP with 0.3Raman spectra of these undoped films and observe strong excitonic luminescence over the entire composition range investigated. The band gap derived from the luminescence excitation spectra corresponds to that of a fully relaxed InGaP film with no residual strain, which is confirmed by the Raman measurements. Light-emitting diodes with peak (300 K) emission centered at less than 590 nm have been fabricated from p-i-n junctions in In 0.35Ga 0.65P. This alloy is close to that with the largest direct band gap in the In yGa 1- y P system and has lattice mismatch from the GaAs substrate of 1%.

A hole modulator for InGaN/GaN light-emitting diodes

International Nuclear Information System (INIS)

Zhang, Zi-Hui; Kyaw, Zabu; Liu, Wei; Ji, Yun; Wang, Liancheng; Tan, Swee Tiam; Sun, Xiao Wei; Demir, Hilmi Volkan

2015-01-01

The low p-type doping efficiency of the p-GaN layer has severely limited the performance of InGaN/GaN light-emitting diodes (LEDs) due to the ineffective hole injection into the InGaN/GaN multiple quantum well (MQW) active region. The essence of improving the hole injection efficiency is to increase the hole concentration in the p-GaN layer. Therefore, in this work, we have proposed a hole modulator and studied it both theoretically and experimentally. In the hole modulator, the holes in a remote p-type doped layer are depleted by the built-in electric field and stored in the p-GaN layer. By this means, the overall hole concentration in the p-GaN layer can be enhanced. Furthermore, the hole modulator is adopted in the InGaN/GaN LEDs, which reduces the effective valance band barrier height for the p-type electron blocking layer from ∼332 meV to ∼294 meV at 80 A/cm 2 and demonstrates an improved optical performance, thanks to the increased hole concentration in the p-GaN layer and thus the improved hole injection into the MQWs

A p-silicon nanowire/n-ZnO thin film heterojunction diode prepared by thermal evaporation

International Nuclear Information System (INIS)

Hazra, Purnima; Jit, S.

2014-01-01

This paper represents the electrical and optical characteristics of a SiNW/ZnO heterojunction diode and subsequent studies on the photodetection properties of the diode in the ultraviolet (UV) wavelength region. In this work, silicon nanowire arrays were prepared on p-type (100)-oriented Si substrate by an electroless metal deposition and etching method with the help of ultrasonication. After that, catalyst-free deposition of zinc oxide (ZnO) nanowires on a silicon nanowire (SiNW) array substrate was done by utilizing a simple and cost-effective thermal evaporation technique without using a buffer layer. The SEM and XRD techniques are used to show the quality of the as-grown ZnO nanowire film. The junction properties of the diode are evaluated by measuring current—voltage and capacitance—voltage characteristics. The diode has a well-defined rectifying behavior with a rectification ratio of 190 at ±2 V, turn-on voltage of 0.5 V, and barrier height is 0.727 eV at room temperature under dark conditions. The photodetection parameters of the diode are investigated in the bias voltage range of ±2 V. The diode shows responsivity of 0.8 A/W at a bias voltage of 2 V under UV illumination (wavelength = 365 nm). The characteristics of the device indicate that it can be used for UV detection applications in nano-optoelectronic and photonic devices. (semiconductor devices)

Processing of n{sup +}/p{sup −}/p{sup +} strip detectors with atomic layer deposition (ALD) grown Al{sub 2}O{sub 3} field insulator on magnetic Czochralski silicon (MCz-si) substrates

Energy Technology Data Exchange (ETDEWEB)

Härkönen, J., E-mail: jaakko.harkonen@helsinki.fi [Helsinki Institute of Physics (Finland); Tuovinen, E. [Helsinki Institute of Physics (Finland); VTT Technical Research Centre of Finland, Microsystems and Nanoelectronics (Finland); Luukka, P.; Gädda, A.; Mäenpää, T.; Tuominen, E.; Arsenovich, T. [Helsinki Institute of Physics (Finland); Junkes, A. [Institute for Experimental Physics, University of Hamburg (Germany); Wu, X. [VTT Technical Research Centre of Finland, Microsystems and Nanoelectronics (Finland); Picosun Oy, Tietotie 3, FI-02150 Espoo Finland (Finland); Li, Z. [School of Materials Science and Engineering, Xiangtan University, Xiangtan, Hunan 411105 (China)

2016-08-21

Detectors manufactured on p-type silicon material are known to have significant advantages in very harsh radiation environment over n-type detectors, traditionally used in High Energy Physics experiments for particle tracking. In p-type (n{sup +} segmentation on p substrate) position-sensitive strip detectors, however, the fixed oxide charge in the silicon dioxide is positive and, thus, causes electron accumulation at the Si/SiO{sub 2} interface. As a result, unless appropriate interstrip isolation is applied, the n-type strips are short-circuited. Widely adopted methods to terminate surface electron accumulation are segmented p-stop or p-spray field implantations. A different approach to overcome the near-surface electron accumulation at the interface of silicon dioxide and p-type silicon is to deposit a thin film field insulator with negative oxide charge. We have processed silicon strip detectors on p-type Magnetic Czochralski silicon (MCz-Si) substrates with aluminum oxide (Al{sub 2}O{sub 3}) thin film insulator, grown with Atomic Layer Deposition (ALD) method. The electrical characterization by current–voltage and capacitance−voltage measurement shows reliable performance of the aluminum oxide. The final proof of concept was obtained at the test beam with 200 GeV/c muons. For the non-irradiated detector the charge collection efficiency (CCE) was nearly 100% with a signal-to-noise ratio (S/N) of about 40, whereas for the 2×10{sup 15} n{sub eq}/cm{sup 2} proton irradiated detector the CCE was 35%, when the sensor was biased at 500 V. These results are comparable with the results from p-type detectors with the p-spray and p-stop interstrip isolation techniques. In addition, interestingly, when the aluminum oxide was irradiated with Co-60 gamma-rays, an accumulation of negative fixed oxide charge in the oxide was observed.

Optoelectric Properties of GaInP p-i-n Solar Cells with Different i-Layer Thicknesses

Directory of Open Access Journals (Sweden)

Tsung-Shine Ko

2015-01-01

Full Text Available The optoelectric properties of GaInP p-i-n solar cells with different intrinsic layer (i-layer thicknesses from 0.25 to 1 μm were studied. Both emission intensity and full width at half maximum features of the photoluminescence spectrum indicate that the optimum i-layer thickness would be between 0.5 and 0.75 μm. The integrated current results of photocurrent experiment also point out that the samples with 0.5 to 0.75 μm i-layer thicknesses have optimum value around 156 nA. Electroreflectance measurements reveal that the built-in electric field strength of the sample gradually deviates from the theoretical value larger when i-layer thickness of the sample is thicker than 0.75 μm. I-V measurements also confirm crystal quality for whole samples by obtaining the information about short currents of photovoltaic performances. A series of experiments reflect that thicker i-layer structure would induce more defects generation lowering crystal quality.

Extended short wavelength infrared HgCdTe detectors on silicon substrates

Science.gov (United States)

Park, J. H.; Hansel, D.; Mukhortova, A.; Chang, Y.; Kodama, R.; Zhao, J.; Velicu, S.; Aqariden, F.

2016-09-01

We report high-quality n-type extended short wavelength infrared (eSWIR) HgCdTe (cutoff wavelength 2.59 μm at 77 K) layers grown on three-inch diameter CdTe/Si substrates by molecular beam epitaxy (MBE). This material is used to fabricate test diodes and arrays with a planar device architecture using arsenic implantation to achieve p-type doping. We use different variations of a test structure with a guarded design to compensate for the lateral leakage current of traditional test diodes. These test diodes with guarded arrays characterize the electrical performance of the active 640 × 512 format, 15 μm pitch detector array.

Quantum dot resonant tunneling diode single photon detector with aluminum oxide aperture defined tunneling area

DEFF Research Database (Denmark)

Li, H.W.; Kardynal, Beata; Ellis, D.J.P.

2008-01-01

Quantum dot resonant tunneling diode single photon detector with independently defined absorption and sensing areas is demonstrated. The device, in which the tunneling is constricted to an aperture in an insulating layer in the emitter, shows electrical characteristics typical of high quality res...

Effect of low temperature and electron irradiation on the volt-ampere characteristics of silicon structures with p-n junctions; Vliyanie nizkikh temperatur i ehlektronnogo oblucheniya na vol`t-ampernye kharakteristiki kremnievykh struktur s p-n perekhodami

Energy Technology Data Exchange (ETDEWEB)

Korshunov, F P [and others

1994-12-31

Features of volt-ampere characteristic behaviour of silicon, diffusion p-n-p structures making up the basis of force diodes under their operation in the mode of nominal and overload current densities are investigated.

Schottky barrier parameters and structural properties of rapidly annealed Zr Schottky electrode on p-type GaN

Science.gov (United States)

Rajagopal Reddy, V.; Asha, B.; Choi, Chel-Jong

2017-06-01

The Schottky barrier junction parameters and structural properties of Zr/p-GaN Schottky diode are explored at various annealing temperatures. Experimental analysis showed that the barrier height (BH) of the Zr/p-GaN Schottky diode increases with annealing at 400 °C (0.92 eV (I-V)/1.09 eV (C-V)) compared to the as-deposited one (0.83 eV (I-V)/0.93 eV (C-V)). However, the BH decreases after annealing at 500 °C. Also, at different annealing temperatures, the series resistance and BH are assessed by Cheung's functions and their values compared. Further, the interface state density (N SS) of the diode decreases after annealing at 400 °C and then somewhat rises upon annealing at 500 °C. Analysis reveals that the maximum BH is obtained at 400 °C, and thus the optimum annealing temperature is 400 °C for the diode. The XPS and XRD analysis revealed that the increase in BH may be attributed to the creation of Zr-N phases with increasing annealing up to 400 °C. The BH reduces for the diode annealed at 500 °C, which may be due to the formation of Ga-Zr phases at the junction. The AFM measurements reveal that the overall surface roughness of the Zr film is quite smooth during rapid annealing process. Project supported by the R&D Program for Industrial Core Technology (No. 10045216) and the Transfer Machine Specialized Lighting Core Technology Development Professional Manpower Training Project (No. N0001363) Funded by the Ministry of Trade, Industry and Energy (MOTIE), Republic of Korea.

Ultrathin NbN film superconducting single-photon detector array

International Nuclear Information System (INIS)

Smirnov, K; Korneev, A; Minaeva, O; Divochiy, A; Tarkhov, M; Ryabchun, S; Seleznev, V; Kaurova, N; Voronov, B; Gol'tsman, G; Polonsky, S

2007-01-01

We report on the fabrication process of the 2 x 2 superconducting single-photon detector (SSPD) array. The SSPD array is made from ultrathin NbN film and is operated at liquid helium temperatures. Each detector is a nanowire-based structure patterned by electron beam lithography process. The advances in fabrication technology allowed us to produce highly uniform strips and preserve superconducting properties of the unpatterned film. SSPD exhibit up to 30% quantum efficiency in near infrared and up to 1% at 5-μm wavelength. Due to 120 MHz counting rate and 18 ps jitter, the time-domain multiplexing read-out is proposed for large scale SSPD arrays. Single-pixel SSPD has already found a practical application in non-invasive testing of semiconductor very-large scale integrated circuits. The SSPD significantly outperformed traditional single-photon counting avalanche diodes

Doping concentration effect on performance of single QW double-heterostructure InGaN/AlGaN light emitting diode

Science.gov (United States)

Halim, N. Syafira Abdul; Wahid, M. Halim A.; Hambali, N. Azura M. Ahmad; Rashid, Shanise; Shahimin, Mukhzeer M.

2017-11-01

Light emitting diode (LED) employed a numerous applications such as displaying information, communication, sensing, illumination and lighting. In this paper, InGaN/AlGaN based on one quantum well (1QW) light emitting diode (LED) is modeled and studied numerically by using COMSOL Multiphysics 5.1 version. We have selected In0.06Ga0.94N as the active layer with thickness 50nm sandwiched between 0.15μm thick layers of p and n-type Al0.15Ga0.85N of cladding layers. We investigated an effect of doping concentration on InGaN/AlGaN double heterostructure of light-emitting diode (LED). Thus, energy levels, carrier concentration, electron concentration and forward voltage (IV) are extracted from the simulation results. As the doping concentration is increasing, the performance of threshold voltage, Vth on one quantum well (1QW) is also increases from 2.8V to 3.1V.

Doping concentration effect on performance of single QW double-heterostructure InGaN/AlGaN light emitting diode

Directory of Open Access Journals (Sweden)

Abdul Halim N. Syafira

2017-01-01

Full Text Available Light emitting diode (LED employed a numerous applications such as displaying information, communication, sensing, illumination and lighting. In this paper, InGaN/AlGaN based on one quantum well (1QW light emitting diode (LED is modeled and studied numerically by using COMSOL Multiphysics 5.1 version. We have selected In0.06Ga0.94N as the active layer with thickness 50nm sandwiched between 0.15μm thick layers of p and n-type Al0.15Ga0.85N of cladding layers. We investigated an effect of doping concentration on InGaN/AlGaN double heterostructure of light-emitting diode (LED. Thus, energy levels, carrier concentration, electron concentration and forward voltage (IV are extracted from the simulation results. As the doping concentration is increasing, the performance of threshold voltage, Vth on one quantum well (1QW is also increases from 2.8V to 3.1V.

Modelling of current-voltage characteristics of infrared photo-detectors based on type – II InAs/GaSb super-lattice diodes with unipolar blocking layers

Directory of Open Access Journals (Sweden)

Vishnu Gopal

2015-09-01

Full Text Available It is shown that current-voltage characteristics of infrared photo-detectors based on type-II InAs/GaSb super-lattices with uni-polar blocking layers can be modelled similar to a junction diode with a finite series resistance on account of blocking barriers. As an example this paper presents the results of a study of current-voltage characteristics of a type II InAs/GaSb super-lattice diode with PbIbN architecture using a recently proposed [J. Appl. Phys. 116, 084502 (2014] method for modelling of illuminated photovoltaic detectors. The thermal diffusion, generation – recombination (g-r, and ohmic currents are found as principal components besides a component of photocurrent due to background illumination. The experimentally observed reverse bias diode current in excess of thermal current (diffusion + g-r, photo-current and ohmic shunt current is reported to be best described by an exponential function of the type, Iexcess = Ir0 + K1exp(K2 V, where Ir0, K1 and K2 are fitting parameters and V is the applied bias voltage. The present investigations suggest that the exponential growth of excess current with the applied bias voltage may be taking place along the localized regions in the diode. These localized regions are the shunt resistance paths on account of the surface leakage currents and/or defects and dislocations in the base of the diode.

Characterisation of GERDA Phase-I detectors in liquid argon

Energy Technology Data Exchange (ETDEWEB)

Barnabe Heider, Marik; Schoenert, Stefan [Max-Planck-Institut fuer Kernphysik (Germany); Gusev, Konstantin [Russian Research Center, Kurchatov Institute (Russian Federation); Joint Institute for Nuclear Research (Russian Federation)

2009-07-01

GERDA will search for neutrinoless double beta decay in {sup 76}Ge by submerging bare enriched HPGe detectors in liquid argon. In GERDA Phase-I, reprocessed enriched-Ge detectors, which were previously operated by the Heidelberg-Moscow and IGEX collaborations, and reprocessed natural-Ge detectors from Genius-TF, will be redeployed. We have tested the operation and performance of bare HPGe detectors in liquid nitrogen and in liquid argon over more than three years with three non-enriched p-type prototype detectors. The detector handling and mounting procedures have been defined and the Phase-I detector technology, the low-mass assembly and the long-term stability in liquid argon have been tested successfully. The Phase-I detectors were reprocessed by Canberra Semiconductor NV, Olen, according to their standard technology but without the evaporation of a passivation layer. After their reprocessing, the detectors have been mounted in their low-mass holders and their characterisation in liquid argon performed. The leakage current, the counting characteristics and the efficiency of the detectors have been measured. The testing of the detectors was carried out in the liquid argon test stand of the GERDA underground Detector Laboratory (GDL) at LNGS. The detectors are now stored underground under vacuum until their operation in GERDA.

Segmentation of the Outer Contact on P-Type Coaxial Germanium Detectors

Energy Technology Data Exchange (ETDEWEB)

Hull, Ethan L.; Pehl, Richard H.; Lathrop, James R.; Martin, Gregory N.; Mashburn, R. B.; Miley, Harry S.; Aalseth, Craig E.; Hossbach, Todd W.

2006-09-21

Germanium detector arrays are needed for low-level counting facilities. The practical applications of such user facilities include characterization of low-level radioactive samples. In addition, the same detector arrays can also perform important fundamental physics measurements including the search for rare events like neutrino-less double-beta decay. Coaxial germanium detectors having segmented outer contacts will provide the next level of sensitivity improvement in low background measurements. The segmented outer detector contact allows performance of advanced pulse shape analysis measurements that provide additional background reduction. Currently, n-type (reverse electrode) germanium coaxial detectors are used whenever a segmented coaxial detector is needed because the outer boron (electron barrier) contact is thin and can be segmented. Coaxial detectors fabricated from p-type germanium cost less, have better resolution, and are larger than n-type coaxial detectors. However, it is difficult to reliably segment p-type coaxial detectors because thick (~1 mm) lithium-diffused (hole barrier) contacts are the standard outside contact for p-type coaxial detectors. During this Phase 1 Small Business Innovation Research (SBIR) we have researched the possibility of using amorphous germanium contacts as a thin outer contact of p-type coaxial detectors that can be segmented. We have developed amorphous germanium contacts that provide a very high hole barrier on small planar detectors. These easily segmented amorphous germanium contacts have been demonstrated to withstand several thousand volts/cm electric fields with no measurable leakage current (<1 pA) from charge injection over the hole barrier. We have also demonstrated that the contact can be sputter deposited around and over the curved outside surface of a small p-type coaxial detector. The amorphous contact has shown good rectification properties on the outside of a small p-type coaxial detector. These encouraging

Effect of band gap narrowing on GaAs tunnel diode I-V characteristics

Energy Technology Data Exchange (ETDEWEB)

Lebib, A.; Hannanchi, R. [Laboratoire d' énergie et de matériaux, LabEM-LR11ES34-Université de sousse (Tunisia); Beji, L., E-mail: lotbej_fr@yahoo.fr [Laboratoire d' énergie et de matériaux, LabEM-LR11ES34-Université de sousse (Tunisia); EL Jani, B. [Unité de Recherche sur les Hétéro-Epitaxies et Applications, Faculté des Sciences, Université de Monastir, 5019 Monastir (Tunisia)

2016-12-01

We report on experimental and theoretical study of current-voltage characteristics of C/Si-doped GaAs tunnel diode. For the investigation of the experimental data, we take into account the band-gap narrowing (BGN) effect due to heavily-doped sides of the tunnel diode. The BGN of the n- and p-sides of tunnel diode was measured by photoluminescence spectroscopy. The comparison between theoretical results and experimental data reveals that BGN effect enhances tunneling currents and hence should be considered to identify more accurately the different transport mechanisms in the junction. For C/Si-doped GaAs tunnel diode, we found that direct tunneling is the dominant transport mechanism at low voltages. At higher voltages, this mechanism is replaced by the rate-controlling tunneling via gap states in the forbidden gap.

Extraction of depth-dependent perturbation factors for silicon diodes using a plastic scintillation detector.

Science.gov (United States)

Lacroix, Frederic; Guillot, Mathieu; McEwen, Malcolm; Gingras, Luc; Beaulieu, Luc

2011-10-01

This work presents the experimental extraction of the perturbation factor in megavoltage electron beams for three models of silicon diodes (IBA Dosimetry, EFD and SFD, and the PTW 60012 unshielded) using a plastic scintillation detector (PSD). The authors used a single scanning PSD mounted on a high-precision scanning tank to measure depth-dose curves in 6-, 12-, and 18-MeV clinical electron beams. They also measured depth-dose curves using the IBA Dosimetry, EFD and SFD, and the PTW 60012 unshielded diodes. The authors used the depth-dose curves measured with the PSD as a perturbation-free reference to extract the perturbation factors of the diodes. The authors found that the perturbation factors for the diodes increased substantially with depth, especially for low-energy electron beams. The experimental results show the same trend as published Monte Carlo simulation results for the EFD diode; however, the perturbations measured experimentally were greater. They found that using an effective point of measurement (EPOM) placed slightly away from the source reduced the variation of perturbation factors with depth and that the optimal EPOM appears to be energy dependent. The manufacturer recommended EPOM appears to be incorrect at low electron energy (6 MeV). In addition, the perturbation factors for diodes may be greater than predicted by Monte Carlo simulations.

Extraction of depth-dependent perturbation factors for silicon diodes using a plastic scintillation detector

International Nuclear Information System (INIS)

Lacroix, Frederic; Guillot, Mathieu; McEwen, Malcolm; Gingras, Luc; Beaulieu, Luc

2011-01-01

Purpose: This work presents the experimental extraction of the perturbation factor in megavoltage electron beams for three models of silicon diodes (IBA Dosimetry, EFD and SFD, and the PTW 60012 unshielded) using a plastic scintillation detector (PSD). Methods: The authors used a single scanning PSD mounted on a high-precision scanning tank to measure depth-dose curves in 6-, 12-, and 18-MeV clinical electron beams. They also measured depth-dose curves using the IBA Dosimetry, EFD and SFD, and the PTW 60012 unshielded diodes. The authors used the depth-dose curves measured with the PSD as a perturbation-free reference to extract the perturbation factors of the diodes. Results: The authors found that the perturbation factors for the diodes increased substantially with depth, especially for low-energy electron beams. The experimental results show the same trend as published Monte Carlo simulation results for the EFD diode; however, the perturbations measured experimentally were greater. They found that using an effective point of measurement (EPOM) placed slightly away from the source reduced the variation of perturbation factors with depth and that the optimal EPOM appears to be energy dependent. Conclusions: The manufacturer recommended EPOM appears to be incorrect at low electron energy (6 MeV). In addition, the perturbation factors for diodes may be greater than predicted by Monte Carlo simulations.

On the AlxGa1-xN/AlyGa1-yN/AlxGa1-xN (x>y) p-electron blocking layer to improve the hole injection for AlGaN based deep ultraviolet light-emitting diodes

Science.gov (United States)

Chu, Chunshuang; Tian, Kangkai; Fang, Mengqian; Zhang, Yonghui; Li, Luping; Bi, Wengang; Zhang, Zi-Hui

2018-01-01

This work proposes the [0001] oriented AlGaN-based deep ultraviolet (DUV) light-emitting diode (LED) possessing a specifically designed p-electron blocking layer (p-EBL) to achieve the high internal quantum efficiency. Both electrons and holes can be efficiently injected into the active region by adopting the Al0.60Ga0.40N/Al0.50Ga0.50N/Al0.60Ga0.40N structured p-EBL, in which a p-Al0.50Ga0.50N layer is embedded into the p-EBL. Moreover, the impact of different thicknesses for the p-Al0.50Ga0.50N insertion layer on the hole and electron injections has also been investigated. Compared with the DUV LED with the bulk p-Al0.60Ga0.40N as the EBL, the proposed LED architectures improve the light output power if the thickness of the p-Al0.50Ga0.50N insertion layer is properly designed.

The origin of the red emission in n-ZnO nanotubes/p-GaN white light emitting diodes

Directory of Open Access Journals (Sweden)

Alvi N

2011-01-01

Full Text Available Abstract In this article, the electroluminescence (EL spectra of zinc oxide (ZnO nanotubes/p-GaN light emitting diodes (LEDs annealed in different ambients (argon, air, oxygen, and nitrogen have been investigated. The ZnO nanotubes by aqueous chemical growth (ACG technique on p-GaN substrates were obtained. The as-grown ZnO nanotubes were annealed in different ambients at 600°C for 30 min. The EL investigations showed that air, oxygen, and nitrogen annealing ambients have strongly affected the deep level emission bands in ZnO. It was concluded from the EL investigation that more than one deep level defect is involved in the red emission appearing between 620 and 750 nm and that the red emission in ZnO can be attributed to oxygen interstitials (Oi appearing in the range from 620 nm (1.99 eV to 690 nm (1.79 eV, and to oxygen vacancies (Vo appearing in the range from 690 nm (1.79 eV to 750 nm (1.65 eV. The annealing ambients, especially the nitrogen ambient, were also found to greatly influence the color-rendering properties and increase the CRI of the as - grown LEDs from 87 to 96.

The origin of the red emission in n-ZnO nanotubes/p-GaN white light emitting diodes

Science.gov (United States)

Alvi, N. H.; Ul Hasan, Kamran; Nur, Omer; Willander, Magnus

2011-12-01

In this article, the electroluminescence (EL) spectra of zinc oxide (ZnO) nanotubes/p-GaN light emitting diodes (LEDs) annealed in different ambients (argon, air, oxygen, and nitrogen) have been investigated. The ZnO nanotubes by aqueous chemical growth (ACG) technique on p-GaN substrates were obtained. The as-grown ZnO nanotubes were annealed in different ambients at 600°C for 30 min. The EL investigations showed that air, oxygen, and nitrogen annealing ambients have strongly affected the deep level emission bands in ZnO. It was concluded from the EL investigation that more than one deep level defect is involved in the red emission appearing between 620 and 750 nm and that the red emission in ZnO can be attributed to oxygen interstitials (Oi) appearing in the range from 620 nm (1.99 eV) to 690 nm (1.79 eV), and to oxygen vacancies (Vo) appearing in the range from 690 nm (1.79 eV) to 750 nm (1.65 eV). The annealing ambients, especially the nitrogen ambient, were also found to greatly influence the color-rendering properties and increase the CRI of the as - grown LEDs from 87 to 96.

High-performance tandem organic light-emitting diodes based on a buffer-modified p/n-type planar organic heterojunction as charge generation layer

Science.gov (United States)

Wu, Yukun; Sun, Ying; Qin, Houyun; Hu, Shoucheng; Wu, Qingyang; Zhao, Yi

2017-04-01

High-performance tandem organic light-emitting diodes (TOLEDs) were realized using a buffer-modified p/n-type planar organic heterojunction (OHJ) as charge generation layer (CGL) consisting of common organic materials, and the configuration of this p/n-type CGL was "LiF/N,N'-diphenyl-N,N'-bis(1-napthyl)-1,1'-biphenyl-4,4'-diamine (NPB)/4,7-diphenyl-1,10-phenanthroline (Bphen)/molybdenum oxide (MoOx)". The optimized TOLED exhibited a maximum current efficiency of 77.6 cd/A without any out-coupling techniques, and the efficiency roll-off was greatly improved compared to the single-unit OLED. The working mechanism of the p/n-type CGL was discussed in detail. It is found that the NPB/Bphen heterojunction generated enough charges under a forward applied voltage and the carrier extraction was a tunneling process. These results could provide a new method to fabricate high-performance TOLEDs.

Characterization of Schottky barrier diodes fabricated from electrochemical oxidation of {alpha} phase brass

Energy Technology Data Exchange (ETDEWEB)

Bond, John W., E-mail: jwb13@le.ac.u [Forensic Research Centre, University of Leicester, Leicester LE1 7 EA (United Kingdom)

2011-04-01

By careful selection of chloride ion concentration in aqueous sodium chloride, electrochemical oxidation of {alpha} phase brass is shown to permit fabrication of either p-type copper (I) oxide/metal or n-type zinc oxide/metal Schottky barrier diodes. X-ray photoelectron and Auger electron spectroscopies provide evidence that barrier formation and rectifying qualities depend on the relative surface abundance of copper (I) oxide and zinc oxide. X-ray diffraction of the resulting diodes shows polycrystalline oxides embedded in amorphous oxidation products that have a lower relative abundance than the diode forming oxide. Conventional I/V characteristics of these diodes show good rectifying qualities. When neither of the oxides dominate, the semiconductor/metal junction displays an absence of rectification.

Schottky barrier diode embedded AlGaN/GaN switching transistor

International Nuclear Information System (INIS)

Park, Bong-Ryeol; Lee, Jung-Yeon; Lee, Jae-Gil; Lee, Dong-Myung; Cha, Ho-Young; Kim, Moon-Kyung

2013-01-01

We developed a Schottky barrier diode (SBD) embedded AlGaN/GaN switching transistor to allow negative current flow during off-state condition. An SBD was embedded in a recessed normally-off AlGaN/GaN-on-Si metal-oxide-semiconductor heterostructure field-effect transistor (MOSHFET). The fabricated device exhibited normally-off characteristics with a gate threshold voltage of 2.8 V, a diode turn-on voltage of 1.2 V, and a breakdown voltage of 849 V for the anode-to-drain distance of 8 µm. An on-resistance of 2.66 mΩcm 2 was achieved at a gate voltage of 16 V in the forward transistor mode. Eliminating the need for an external diode, the SBD embedded switching transistor has advantages of significant reduction in parasitic inductance and chip area. (paper)

A Simple, Small-Scale Lego Colorimeter with a Light-Emitting Diode (LED) Used as Detector

Science.gov (United States)

Asheim, Jonas; Kvittingen, Eivind V.; Kvittingen, Lise; Verley, Richard

2014-01-01

This article describes how to construct a simple, inexpensive, and robust colorimeter from a few Lego bricks, in which one light-emitting diode (LED) is used as a light source and a second LED as a light detector. The colorimeter is suited to various grades and curricula.

Depletion voltage studies on n-in-n MCz silicon diodes after irradiation with 70 MeV protons

CERN Document Server

Holmkvist, William

2014-01-01

Silicon detectors is the main component in the pixel detectors in the ATLAS experiment at CERN in order to detect the particles and recreate their tracks after a proton-proton collision. One criteria on these detectors is to be able to operate in the high radiation field close to the particle collision. The usual behavior of the silicon detectors is that they get type inverted and an increase in the depletion voltage can be seen after exposed to significant amounts of radiation. In contrast n-type Magnetic Czochralski (MCz) silicon doesn’t follow FZ silicons pattern of getting type inverted when it comes to high energy particle irradiation, in the range of GeV. However it was observed that MCz silicon diodes that had been irradiated with 23 MeV protons followed the FZ silicon behavior and did type invert. The aim of the project is to find out how the depletion voltage of MCz silicon changes after being irradiated by 70 MeV at fluencies of 1E13, 1E14 and 5E14 neq/cm2, to give a further insight of at what en...

Piezoelectric polarization and quantum size effects on the vertical transport in AlGaN/GaN resonant tunneling diodes

International Nuclear Information System (INIS)

Dakhlaoui, H; Almansour, S

2016-01-01

In this work, the electronic properties of resonant tunneling diodes (RTDs) based on GaN-Al x Ga (1−x) N double barriers are investigated by using the non-equilibrium Green functions formalism (NEG). These materials each present a wide conduction band discontinuity and a strong internal piezoelectric field, which greatly affect the electronic transport properties. The electronic density, the transmission coefficient, and the current–voltage characteristics are computed with considering the spontaneous and piezoelectric polarizations. The influence of the quantum size on the transmission coefficient is analyzed by varying GaN quantum well thickness, Al x Ga (1−x) N width, and the aluminum concentration x Al . The results show that the transmission coefficient more strongly depends on the thickness of the quantum well than the barrier; it exhibits a series of resonant peaks and valleys as the quantum well width increases. In addition, it is found that the negative differential resistance (NDR) in the current–voltage ( I – V) characteristic strongly depends on aluminum concentration x Al . It is shown that the peak-to-valley ratio (PVR) increases with x Al value decreasing. These findings open the door for developing vertical transport nitrides-based ISB devices such as THz lasers and detectors. (paper)

Performance of RF sputtered p-Si/n-ZnO nanoparticle thin film heterojunction diodes in high temperature environment

Energy Technology Data Exchange (ETDEWEB)

Singh, Satyendra Kumar, E-mail: satyndra.singh.eee09@itbhu.ac.in [Department of Electronics and Communication Engineering, Model Institute of Engineering and Technology, Jammu, 181122 (India); Department of Electronics and Communication Engineering, Motilal Nehru National Institute of Technology, Allahabad, Uttar Pradesh, 211004 (India); Hazra, Purnima, E-mail: purnima.hazra@smvdu.ac.in [Department of Electronics and Communication Engineering, Shri Mata Vaishno Devi University, Katra, Jammu and Kashmir, 182320 (India)

2017-04-01

Highlights: • Synthesize ZnO nanoparticle thin film on p-Si substrate using RF sputtering method. • I–V and C–V characteristics of Si/ZnO heterojunction diode are studied. • High temperature performance is analyzed accounting barrier height inhomogeneities. • Gaussian distribution of BH inhomogeneities is considered to modify Richardson plot. • Modified R constant is 33.06 Acm{sup −2}K{sup −2}, i.e. nearer to theoretical value 32 Acm{sup −2}K{sup −2}. - Abstract: In this article, temperature-dependent current-voltage characteristics of n-ZnO/p-Si nanoparticle thin film heterojunction diode grown by RF sputtering technique are analyzed in the temperature range of 300–433 k to investigate the performance of the device in high temperature environment. The microstructural, morphological, optical and temptrature dependent electrical properties of as-grown nanoparticle thin film were characterized by X-ray diffractometer (XRD), atomic force microscopy (AFM), field emmision scanning electron microscopy (FESEM), energy-dispersive X-ray spectroscopy (EDX), variable angle ellipsometer and semiconductor device analyzer. XRD spectra of as-grown ZnO films are exhibited that highly c-axis oriented ZnO nanostructures are grown on p- Si〈100〉 substrate whereas AFM and FESEM images confirm the homogeneous deposition of ZnO nanoparticles on surface of Si substratewith minimum roughness.The optical propertiesof as-grown ZnO nanoparticles have been measured in the spectral range of 300–800 nm using variable angle ellipsometer.To measure electrical parameters of the device prototype in the temperature range of room temperature (300 K) to 433 K, large area ohmic contacts were fabricated on both side of the ZnO/Si heterostructure. From the current-voltage charcteristics of ZnO/Si heterojunction device, it is observed that the device exhibits rectifing nature at room temperature. However, with increase in temperature, reverse saturation current and barrier

Inductively coupled plasma-induced defects in n-type GaN studied from Schottky diode characteristics

International Nuclear Information System (INIS)

Nakamura, W.; Tokuda, Y.; Ueda, H.; Kachi, T.

2006-01-01

Inductively coupled plasma-(ICP-)induced defects in n-type GaN have been studied from current-voltage (I-V) characteristics and deep-level transient spectroscopy (DLTS) for Schottky diodes fabricated on etched surfaces. The samples after ICP etching show the ohmic I-V characteristics. Schottky characteristics are obtained after annealing at 600 and 800 deg. C in N 2 , but are not restored to that of the control samples. DLTS shows that the effect of ICP etching is small on the region beyond 80 nm from the surface. These results suggest that there remain ICP-induced damage in the near-surface region after thermal annealing

Characterization of HPGe detectors using Computed Tomography

Energy Technology Data Exchange (ETDEWEB)

Hedman, A., E-mail: Angelica.Hedman@foi.se [Swedish Defence Research Agency, Division of CBRN Defence and Security, SE-90182 Umeå (Sweden); Umeå University, Department of Radiation Sciences, Radiation Physics, SE-90187 Umeå (Sweden); Bahar Gogani, J.; Granström, M. [Swedish Defence Research Agency, Division of CBRN Defence and Security, SE-90182 Umeå (Sweden); Johansson, L.; Andersson, J.S. [Umeå University, Department of Radiation Sciences, Radiation Physics, SE-90187 Umeå (Sweden); Ramebäck, H. [Swedish Defence Research Agency, Division of CBRN Defence and Security, SE-90182 Umeå (Sweden); Chalmers University of Technology, Department of Chemical and Biological Engineering, Nuclear Chemistry, SE-41296 Göteborg (Sweden)

2015-06-11

Computed Tomography (CT) high-resolution imaging have been used to investigate if there is a significant change in the crystal-to-window distance, i.e. the air gap thickness, in a small n-type detector cooled to 77 K, and in a medium sized p-type HPGe detector when cooled to 100 K. The findings were compared to detector dimension data made available by the manufacturer. The air gap thickness increased by (0.38±0.07) mm for the n-type detector and by (0.40±0.15) mm for the p-type detector when the detectors were cooled to 77 resp. 100 K compared to at room temperature. Monte Carlo calculations indicate that these differences have a significant impact on the efficiency in close geometries (<5 cm). In the energy range of 40–700 keV with a source placed directly on endcap, the change in detector efficiency with temperature is 1.9–2.9% for the n-type detector and 0.3–2.1% for the p-type detector. The measured air gap thickness when cooling the detector was 1.1 mm thicker than manufacturer data for the n-type detector and 0.2 mm thicker for the p-type detector. In the energy range of 40–700 keV and with a source on endcap, this result in a change in detector efficiency of 5.2–7.1% for the n-type detector and 0.2–1.0% for the p-type detector, i.e. the detector efficiency is overestimated using data available by the manufacturer.

Near-field microscopy of waveguide architectures of InGaN/GaN diode lasers

Science.gov (United States)

Friede, Sebastian; Tomm, Jens W.; Kühn, Sergei; Hoffmann, Veit; Wenzel, Hans; Weyers, Markus

2016-11-01

Waveguide (WG) architectures of 420 nm emitting InGaN/GaN diode lasers are analyzed by photoluminescence and photocurrent spectroscopy using a nearfield scanning optical microscope that scans along their front facets. The components of the ‘optical active cavity’, quantum wells, WGs, and cladding layers are individually inspected with a spatial resolution of ∼100 nm. Separate analysis of the p- and n-sections of the WG was achieved, and reveals defect levels in the p-part. Moreover, it is demonstrated that the homogeneity of the n-WG section directly affects the quantum wells that are grown on top of this layer. Substantially increased carrier capture efficiencies into InGaN/GaN-WGs compared to GaN-WGs are demonstrated.

Method of producing p-i-n structures by compensation of lithium ions from both side of silicon

International Nuclear Information System (INIS)

Muminov, R.A.; Radjapov, S.A.; Saymbetov, A.K.; Tursunkulov, O.M.; Pindurin, Yu.S.

2007-01-01

Full text: Semiconductor nuclear radiation detectors are needed to solve certain problems in nuclear spectroscopy. The development of efficiency detectors became possible with advances in growing high purify silicon single crystals with the required properties, satisfying the requirements for obtaining detectors based on them. One important requirement for obtaining detectors with sensitive area is that its resistance must be high. This is achieved by using the lithium ion drift process in the volume of the semiconductor detector. Thus it has been developed and created silicon semiconductor nuclear radiation detectors with vide range of diameter of sensitive area up to 100 mm and thickness (from 1mm to 10mm). At present work a new method for producing p-i-n structures was developed to decrease substantially the time required for compensation of silicon by lithium ions and to eliminate at the same time the negative consequences of holding the crystal at a high temperature and under a high voltage. Drift of lithium ions from two ends of prepared samples is conducted to a depth sufficient for the required compensation of the initial acceptor impurity in silicon. The method described above was used to fabricate a batch of Si(Li) detectors with a 1-10 mm thick and 10-110 mm in diameter sensitive region. The thickness of the sensitive region was determined by performing standard measurements and chemical pigmentation. Advantages of detectors are they have improved properties and less time for compensation of lithium ions. (authors)

Reduced Graphene Oxide/Single-Walled Carbon Nanotube Hybrid Films Using Various p-Type Dopants and Their Application to GaN-Based Light-Emitting Diodes.

Science.gov (United States)

Lee, Byeong Ryong; Kim, Tae Geun

2017-01-01

This article reports the electrical and optical properties of the reduced graphene oxide (RGO)/single-walled carbon nanotube (SWCNT) films using various p-type dopants and their application to GaN-based light-emitting diodes. To enhance the current injection and spreading of the RGO/SWCNT films on the light-emitting diodes (LEDs), we increased the work function (Φ) of the films using chemical doping with AuCl₃, poly(3,4-ethylenedioxythiophene) oxidized with poly(4-styrenesulfonate) (PEDOT:PSS) and MoO₃; thereby reduced the Schottky barrier height between the RGO/SWCNT films and p-GaN. By comparison, LEDs fabricated with work-function-tuned RGO/SWCNT film doped with MoO₃ exhibited the decrease of the forward voltage from 5.3 V to 5.02 V at 20 mA and the increase of the output power up to 1.26 times. We also analyzed the current injection mechanism using ultraviolet photoelectron spectroscopy and X-ray photoelectron spectroscopy.

Reduced Graphene Oxide/Single-Walled Carbon Nanotube Hybrid Film Using Various p-Type Dopants and Its Application to GaN-Based Light-Emitting Diodes.

Science.gov (United States)

Lee, Byeong Ryong; Kim, Tae Geun

2016-06-01

This paper reports the electrical and optical properties of the reduced graphene oxide (RGO)/single-walled carbon nanotube (SWNT) films using various p-type dopants and its application to GaN-based light-emitting diodes. To enhance the current injection and spreading of the RGO/SWNT films on the light-emitting diodes (LEDs), we increased the work function (φ) of the films using chemical doping with AuCl3, poly(3,4-ethylenedioxythiophene) oxidized with poly(4-styrenesulfonate) ( PSS) and MoO3; thereby reduced the Schottky barrier height between the RGO/SWNT films and p-GaN. By comparison, LEDs fabricated with work-function-tuned RGO/SWNT film doped with MoO3 exhibited the decrease of the forward voltage from 5.3 V to 5.02 V at 20 mA and the increase of the output power up to 1.26 times. We also analyzed the current injection mechanism using ultraviolet photoelectron spectroscopy and X-ray photoelectron spectroscopy.

Annealing effect on I-V characteristic of n-ZnO-p-InSe heterojunction

Directory of Open Access Journals (Sweden)

Kovalyuk Z. D.

2015-12-01

Full Text Available The article is devoted to studying of influence of vacuum low-temperature annealing on the electrical and photoelectric characteristics of n-ZnO-p-InSe heterostructure. Indium monoselenide (InSe is a semiconductor of the A3B6 group of layered compounds. The basic unit consists of two planes of metal atoms sandwiched between two planes of chalcogen atoms (Se-In-In-Se. The absence of dangling bonds on InSe cleaved surface makes it possible to use this semiconductor as a substrate for fabrication of heterostructures based on semiconductor materials with different symmetries and lattice spacings. Zinc oxide (ZnO is the most suitable material for window materials and solar cells buffer layers application due to its marvelous transparency in the range of visible region. InSe single crystals were grown by the Bridgman technique from a nonstoichiometric melt and characterized by a pronounced layered structure along the whole length of a sample. ZnO thin oxide film was formed on freshly cleaved van der Waals surface of InSe layered crystal. n-ZnO-p-InSe heterostructure was prepared by the method of high-frequency magnetron sputtering. Sensitivity spectral areas were identified by MDR-3 monochromator with a resolution of 2.6 nm/mm. The current-voltage characteristics of the n-ZnO-p-InSe heterostructures showed a clearly pronounced diode character. In the forward bias of the initial samples, the diode factor had the value 3.7 at room temperature. It is shown that vacuum low-temperature annealing reduces shunt currents of the heterojunction, which is reflected in the decrease in the values of n from 3.7 to 2.7.

Embeded photonic crystal at the interface of p-GaN and Ag reflector to improve light extraction of GaN-based flip-chip light-emitting diode

International Nuclear Information System (INIS)

Zhen, Aigong; Ma, Ping; Zhang, Yonghui; Guo, Enqing; Tian, Yingdong; Liu, Boting; Guo, Shikuan; Shan, Liang; Wang, Junxi; Li, Jinmin

2014-01-01

In this experiment, a flip-chip light-emitting diode with photonic crystal was fabricated at the interface of p-GaN and Ag reflector via nanospheres lithography technique. In this structure, photonic crystal could couple with the guide-light efficiently by reason of the little distance between photonic crystal and active region. The light output power of light emitting diode with embedded photonic crystal was 1.42 times larger than that of planar flip-chip light-emitting diode. Moreover, the embedded photonic crystal structure makes the far-field divergence angle decreased by 18° without spectra shift. The three-dimensional finite difference time domain simulation results show that photonic crystal could improve the light extraction, and enhance the light absorption caused by Ag reflector simultaneously, because of the roughed surface. The depth of photonic crystal is the key parameter affecting the light extraction and absorption. Light extraction efficiency increases with the depth photonic crystal structure rapidly, and reaches the maximum at the depth 80 nm, beyond which light extraction decrease drastically

Technology development of p-type microstrip detectors with radiation hard p-spray isolation

International Nuclear Information System (INIS)

Pellegrini, G.; Fleta, C.; Campabadal, F.; Diez, S.; Lozano, M.; Rafi, J.M.; Ullan, M.

2006-01-01

A technology for the fabrication of p-type microstrip silicon radiation detectors using p-spray implant isolation has been developed at CNM-IMB. The p-spray isolation has been optimized in order to withstand a gamma irradiation dose up to 50 Mrad (Si), which represents the ionization radiation dose expected in the middle region of the SCT-Atlas detector of the future Super-LHC during 10 years of operation. The best technological options for the p-spray implant were found by using a simulation software package and dedicated calibration runs. Using the optimized technology, detectors have been fabricated in the Clean Room facility of CNM-IMB, and characterized by reverse current and capacitance measurements before and after irradiation. The average full depletion voltage measured on the non-irradiated detectors was V FD =41±3 V, while the leakage current density for the microstrip devices at V FD +20 V was 400 nA/cm 2

Fabrication of InGaN/GaN nanopillar light-emitting diode arrays

DEFF Research Database (Denmark)

Ou, Yiyu; Fadil, Ahmed; Ou, Haiyan

Nanopillar InGaN/GaN green light-emitting diode arrays were fabricated by using self-assembled nanopatterning and dry etching process. Both internal and external quantum efficiency were increased due to strain relaxation and enhanced light extraction.......Nanopillar InGaN/GaN green light-emitting diode arrays were fabricated by using self-assembled nanopatterning and dry etching process. Both internal and external quantum efficiency were increased due to strain relaxation and enhanced light extraction....

Minimizing guard ring dead space in silicon detectors with an n-type guard ring at the edge of the detector

International Nuclear Information System (INIS)

Palviainen, Tanja; Tuuva, Tuure; Leinonen, Kari

2007-01-01

Detectors with n-type silicon with an n + -type guard ring were investigated. In the present work, a new p + /n/n + detector structure with an n + guard ring is described. The guard ring is placed at the edge of the detector. The detector depletion region extends also sideways, allowing for signal collection very close to the n-guard ring. In this kind of detector structure, the dead space of the detector is minimized to be only below the guard ring. This is proved by simulations done using Silvaco/ATLAS software

Minimizing guard ring dead space in silicon detectors with an n-type guard ring at the edge of the detector

Energy Technology Data Exchange (ETDEWEB)

Palviainen, Tanja [Lappeenranta University of Technology, P.O. Box 20, FIN-53851 Lappeenranta (Finland)]. E-mail: tanja.palviainen@lut.fi; Tuuva, Tuure [Lappeenranta University of Technology, P.O. Box 20, FIN-53851 Lappeenranta (Finland); Leinonen, Kari [Lappeenranta University of Technology, P.O. Box 20, FIN-53851 Lappeenranta (Finland)

2007-04-01

Detectors with n-type silicon with an n{sup +}-type guard ring were investigated. In the present work, a new p{sup +}/n/n{sup +} detector structure with an n{sup +} guard ring is described. The guard ring is placed at the edge of the detector. The detector depletion region extends also sideways, allowing for signal collection very close to the n-guard ring. In this kind of detector structure, the dead space of the detector is minimized to be only below the guard ring. This is proved by simulations done using Silvaco/ATLAS software.

Factors affecting the energy resolution in alpha particle spectrometry with silicon diodes; Fatores que influenciam a resolucao em energia na espectrometria de particulas alfa com diodos de Si

Energy Technology Data Exchange (ETDEWEB)

Camargo, Fabio de. E-mail: f.camargo@bol.com.br

2005-07-01

In this work are presented the studies about the response of a multi-structure guard rings silicon diode for detection and spectrometry of alpha particles. This ion-implanted diode (Al/p{sup +}/n/n{sup +}/Al) was processed out of 300 {mu}m thick, n type substrate with a resistivity of 3 k{omega}{center_dot}cm and an active area of 4 mm{sup 2}. In order to use this diode as a detector, the bias voltage was applied on the n{sup +} side, the first guard ring was grounded and the electrical signals were readout from the p{sup +} side. These signals were directly sent to a tailor made preamplifier, based on the hybrid circuit A250 (Amptek), followed by a conventional nuclear electronic. The results obtained with this system for the direct detection of alpha particles from {sup 241}Am showed an excellent response stability with a high detection efficiency ({approx_equal} 100 %). The performance of this diode for alpha particle spectrometry was studied and it was prioritized the influence of the polarization voltage, the electronic noise, the temperature and the source-diode distance on the energy resolution. The results showed that the major contribution for the deterioration of this parameter is due to the diode dead layer thickness (1 {mu}m). However, even at room temperature, the energy resolution (FWHM = 18.8 keV) measured for the 5485.6 MeV alpha particles ({sup 241}Am) is comparable to those obtained with ordinary silicon barrier detectors frequently used for these particles spectrometry. (author)

Asymmetric quantum-well structures for AlGaN/GaN/AlGaN resonant tunneling diodes

Energy Technology Data Exchange (ETDEWEB)

Yang, Lin' an, E-mail: layang@xidian.edu.cn; Li, Yue; Wang, Ying; Xu, Shengrui; Hao, Yue [State Key Discipline Laboratory of Wide Bandgap Semiconductor Technology, School of Microelectronics, Xidian University, Xi' an 710071 (China)

2016-04-28

Asymmetric quantum-well (QW) structures including the asymmetric potential-barrier and the asymmetric potential-well are proposed for AlGaN/GaN/AlGaN resonant tunneling diodes (RTDs). Theoretical investigation gives that an appropriate decrease in Al composition and thickness for emitter barrier as well as an appropriate increase of both for collector barrier can evidently improve the negative-differential-resistance characteristic of RTD. Numerical simulation shows that RTD with a 1.5-nm-thick GaN well sandwiched by a 1.3-nm-thick Al{sub 0.15}Ga{sub 0.85}N emitter barrier and a 1.7-nm-thick Al{sub 0.25}Ga{sub 0.75}N collector barrier can yield the I-V characteristic having the peak current (Ip) and the peak-to-valley current ratio (PVCR) of 0.39 A and 3.6, respectively, about double that of RTD with a 1.5-nm-thick Al{sub 0.2}Ga{sub 0.8}N for both barriers. It is also found that an introduction of InGaN sub-QW into the diode can change the tunneling mode and achieve higher transmission coefficient of electron. The simulation demonstrates that RTD with a 2.8-nm-thick In{sub 0.03}Ga{sub 0.97}N sub-well in front of a 2.0-nm-thick GaN main-well can exhibit the I-V characteristic having Ip and PVCR of 0.07 A and 11.6, about 7 times and double the value of RTD without sub-QW, respectively. The purpose of improving the structure of GaN-based QW is to solve apparent contradiction between the device structure and the device manufacturability of new generation RTDs for sub-millimeter and terahertz applications.

Effect of surface states on electrical characteristic of metal - insulator - semiconductor (MIS) diodes

International Nuclear Information System (INIS)

Altindal, S.; Doekme, I.; Tataroglu, A.; Sahingoez, R.

2002-01-01

The current-voltage (I-V) characteristics of Metal-Insulator-Semiconductor (MIS) Schottky barrier diodes which is consider distribution of interface states in equilibrium with semiconductor were determined at two (low and high) temperature. The interface states were responsible for non-ideal behavior of the forward I-V characteristic of diodes. Both diodes (n and p type Si) showed non-ideal behavior with an ideality factor 1.6 and 1.85 respectively at room temperature. The higher values of n-type Si were attributed to an order of magnitude higher density of interface states in the both diodes. The effect of an interfacial insulator layer between the metal and semiconductor are also studied. The high density of interface states also caused a reduction in the barrier height of the MIS diode. It is shown that by using Norde function at low and high temperature, barrier height □ b , series resistance R s and ideality factor n can be determined even in the case 1 s obtained from Norde function strongly depend on temperature, and decrease with increasing temperature. In addition, the potential barrier height increases with increasing temperature. The mean density of interface states N ss decreases with increasing temperature. Particularly at low temperature the I-V characteristics are controlled by interface states density

Transient voltage suppressor diode designed for the protection of high-brightness GaN-based LEDs from various electrostatic discharge shocks

International Nuclear Information System (INIS)

Bouangeune, Daoheung; Lee, Yeji; Cho, Jaehee; Shim, Kyuhwan; Choi, Cheljong; Choi, Sangsik; Cho, Deokho

2014-01-01

Transient voltage suppressor (TVS) diodes were fabricated using low-temperature epitaxy technology and were employed to improve the electrostatic discharge (ESD) strength of GaN light emitting diodes (LEDs). The ESD performance and the protection capability of the TVS diodes were investigated using various ESD simulators of the human body model (HBM), the IEC (International Electrotechnical Commission) 61000-4-2 (IEC), and a transmission line pulse (TLP) analysis. According to the IEC, the manufactured TVS diode could withstand in excess of ±30 kV without any degradation in the I-V characteristics; meanwhile, the GaN LED itself exhibited catastrophic degradation caused by weak ESD power. The GaN LED assembled with the TVS diode had improved ESD robustness from ±3.8 kV to ±8 kV according to the HBM, from ±1.2 kV to > ±30 kV according to the IEC, and from 4.3 A to > ±30 A according to the TLP analysis. Furthermore, its performance was maintained perfect I-V manner with negligible changes in radiant power, leakage current and breakdown voltage up to the limit of the ESD simulators. Namely, the manufactured TVS diodes were effective in the protection of sensitive GaN LEDs from very strong ESD shocks.

Transient voltage suppressor diode designed for the protection of high-brightness GaN-based LEDs from various electrostatic discharge shocks

Energy Technology Data Exchange (ETDEWEB)

Bouangeune, Daoheung; Lee, Yeji; Cho, Jaehee; Shim, Kyuhwan; Choi, Cheljong [Chonbuk National University, Jeonju (Korea, Republic of); Choi, Sangsik; Cho, Deokho [Sigetronics, Inc., Jeonju (Korea, Republic of)

2014-10-15

Transient voltage suppressor (TVS) diodes were fabricated using low-temperature epitaxy technology and were employed to improve the electrostatic discharge (ESD) strength of GaN light emitting diodes (LEDs). The ESD performance and the protection capability of the TVS diodes were investigated using various ESD simulators of the human body model (HBM), the IEC (International Electrotechnical Commission) 61000-4-2 (IEC), and a transmission line pulse (TLP) analysis. According to the IEC, the manufactured TVS diode could withstand in excess of ±30 kV without any degradation in the I-V characteristics; meanwhile, the GaN LED itself exhibited catastrophic degradation caused by weak ESD power. The GaN LED assembled with the TVS diode had improved ESD robustness from ±3.8 kV to ±8 kV according to the HBM, from ±1.2 kV to > ±30 kV according to the IEC, and from 4.3 A to > ±30 A according to the TLP analysis. Furthermore, its performance was maintained perfect I-V manner with negligible changes in radiant power, leakage current and breakdown voltage up to the limit of the ESD simulators. Namely, the manufactured TVS diodes were effective in the protection of sensitive GaN LEDs from very strong ESD shocks.

Design of thin InGaAsN(Sb) n-i-p junctions for use in four-junction concentrating photovoltaic devices

Science.gov (United States)

Wilkins, Matthew M.; Gupta, James; Jaouad, Abdelatif; Bouzazi, Boussairi; Fafard, Simon; Boucherif, Abderraouf; Valdivia, Christopher E.; Arès, Richard; Aimez, Vincent; Schriemer, Henry P.; Hinzer, Karin

2017-04-01

Four-junction solar cells for space and terrestrial applications require a junction with a band gap of ˜1 eV for optimal performance. InGaAsN or InGaAsN(Sb) dilute nitride junctions have been demonstrated for this purpose, but in achieving the 14 mA/cm2 short-circuit current needed to match typical GaInP and GaAs junctions, the open-circuit voltage (VOC) and fill factor of these junctions are compromised. In multijunction devices incorporating materials with short diffusion lengths, we study the use of thin junctions to minimize sensitivity to varying material quality and ensure adequate transmission into lower junctions. An n-i-p device with 0.65-μm absorber thickness has sufficient short-circuit current, however, it relies less heavily on field-aided collection than a device with a 1-μm absorber. Our standard cell fabrication process, which includes a rapid thermal anneal of the contacts, yields a significant improvement in diffusion length and device performance. By optimizing a four-junction cell around a smaller 1-sun short-circuit current of 12.5 mA/cm2, we produced an InGaAsN(Sb) junction with open-circuit voltage of 0.44 V at 1000 suns (1 sun=100 mW/cm2), diode ideality factor of 1.4, and sufficient light transmission to allow >12.5 mA/cm2 in all four subcells.

Segmented detector for recoil neutrons in the p(γ, n)π+ reaction

International Nuclear Information System (INIS)

Korkmaz, E.; O'Rielly, G.V.; Hutcheon, D.A.; Feldman, G.; Jordan, D.; Kolb, N.R.; Pywell, R.E.; Retzlaff, G.A.; Sawatzky, B.D.; Skopik, D.M.; Vogt, J.M.; Cairns, E.; Giesen, U.; Holm, L.; Opper, A.K.; Rozon, F.M.; Soukup, J.

1999-01-01

A segmented neutron detector has been constructed and used for recoil neutron (6-13 MeV) measurements of the reaction γp→nπ + very close to threshold. BC-505 liquid scintillator was used to allow pulse shape discrimination between neutrons and photons. A measurement of the absolute efficiency of the detector was performed using stopped pions in the reaction π - p→nγ. Results of the efficiency calibration are compared to a Monte Carlo simulation. (author)

Characteristics of Si-PIN diode X-ray detector with DSP electronics

International Nuclear Information System (INIS)

Dutta, Juhi; Tapader, Srijita; Bisoi, Abhijit; Ray, Sudatta; Saha Sarkar, M.; Pramanik, Dibyadyuti; Saha, Archisman

2012-01-01

In the present work, the studies to investigate the features of PIN diodes detector coupled with a digital processor have been extended. At low energies, backscattered Compton peaks are close in energy to photo peak of the gamma of interest. Thus the backscattered peaks pose a serious problem in the analysis of spectra of low energy gamma rays. It has been initiated some measurements to quantitatively estimate the same as function of energy and Z of the scatterer. Recently there has been application of backscattering in high-resolution gamma backscatter imaging for technical applications

Simulation study of signal formation in position sensitive planar p-on-n silicon detectors after short range charge injection