WorldWideScience

Sample records for p-i-n detector diodes

  1. Noise in a-Si:H p-i-n detector diodes

    International Nuclear Information System (INIS)

    Cho, G.; Qureshi, S.; Drewery, J.S.; Jing, T.; Kaplan, S.N.; Lee, H.; Mireshghi, A.; Perez-Mendez, V.; Wildermuth, D.

    1991-10-01

    Noise of a-Si:H p-i-n diodes (5 ∼ 50 μm thick) under reverse bias was investigated. The current dependent 1/f type noise was found to be the main noise component at high bias. At low bias the thermal noise from a series resistance of the p-layer and of the metallic contacts is the dominant noise source which is unrelated to the reverse current through the diode. The noise associated with the p-layer resistance decreased significantly on annealing under reverse bias, reducing the total zero bias noise by a factor 2 approximately. The noise recovered to the original value on subsequent annealing without bias. In addition to the resistive noise there seems to be a shaping time independent noise component at zero biased diodes

  2. Simulation of Si P-i-N diodes for use in a positron emission tomography detector module

    International Nuclear Information System (INIS)

    Bailey, M.J.; University of Wollongong, NSW; Rosenfeld, A.; Lerch, M.; Taylor, G.; Heiser, G.

    2000-01-01

    Full text: Current Positron Emission Tomography (PET) systems consist of scintillation crystals optically coupled to photomultiplier tubes with associated electronics used to detect photons generated within the scintillator. The cost of photomultiplier tubes (PMTs) is considerable and is the major factor in the cost of PET systems. It has been suggested that Si P-i-N diodes can replace PMTs and provide Depth of Interaction (DOI) information for improved spatial resolution. Si P-i-N diodes of 25mm x 300μm and 3mm x 300μm cross sectional area were simulated using a 2D Monte Carlo program (PClD V5) from the UNSW photovoltics group. The diffusion lengths were varied from 0.5μm to 5μm and the charge collection characteristics of the diodes were observed. A 400nm monochromatic light source was used for the excitation as an approximation of the mean wavelength output from LSO crystal. The diodes were reverse biased with voltages 40V, 20V and 10V. The optimum diffusion length of up to 2μm and bias voltage of 40V were determined using the electric field, current density, carrier density and potential distribution results. These parameters will be used for the design of a device for optimal charge collection capabilities for the wavelengths encountered in PET applications. Further studies need to be conducted using spectra from LSO rather than a monochromatic source. The response of various Si P-i-N diodes to a monochromatic light source have been modeled in order to design a device for application in a PET detector module for DOI measurements. The charge collection within the first 2μm has been emphasized due to the strong absorption of photons from LSO near the surface.Copyright (2000) Australasian College of Physical Scientists and Engineers in Medicine

  3. GaAs Schottky versus p/i/n diodes for pixellated X-ray detectors

    CERN Document Server

    Bourgoin, J C

    2002-01-01

    We discuss the performances of GaAs p/i/n structures and Schottky barriers for application as photodetectors for high-energy photons. We compare the magnitude of the leakage current and the width of the depleted region for a given reverse bias. We mention the effect of states present at the metal-semiconductor interface on the extension of the space charge region in Schottky barriers. We illustrate this effect by a description of the capacitance behaviour of a Au-GaAs barrier under gamma irradiation.

  4. Leakage current of amorphous silicon p-i-n diodes made by ion shower doping

    International Nuclear Information System (INIS)

    Kim, Hee Joon; Cho, Gyuseong; Choi, Joonhoo; Jung, Kwan-Wook

    2002-01-01

    In this letter, we report the leakage current of amorphous silicon (a-Si:H) p-i-n photodiodes, of which the p layer is formed by ion shower doping. The ion shower doping technique has an advantage over plasma-enhanced chemical vapor deposition (PECVD) in the fabrication of a large-area amorphous silicon flat-panel detector. The leakage current of the ion shower diodes shows a better uniformity within a 30 cmx40 cm substrate than that of the PECVD diodes. However, it shows a higher leakage current of 2-3 pA/mm 2 at -5 V. This high current originates from the high injection current at the p-i junction

  5. Characterization of an Mg-implanted GaN p-i-n Diode

    Science.gov (United States)

    2016-03-31

    Characterization of an Mg- implanted GaN p-i-n Diode Travis J. Anderson, Jordan D. Greenlee, Boris N. Feigelson, Karl D. Hobart, and Francis J...Kub Naval Research Laboratory, Washington, DC 20375 Abstract: A p-i-n diode formed by the implantation of Mg in GaN was fabricated and...characterized. After implantation , Mg was activated using the symmetrical multicycle rapid thermal annealing technique with heating pulses up to 1340C

  6. Recombination of charge carriers in the GaAs-based p-i-n diode

    International Nuclear Information System (INIS)

    Ayzenshtat, G. I.; Yushenko, A. Y.; Gushchin, S. M.; Dmitriev, D. V.; Zhuravlev, K. S.; Toropov, A. I.

    2010-01-01

    It is established that the radiative recombination of charge carriers plays a substantial role in the GaAs-based p-i-n diodes at high densities of the forward current. It is shown experimentally that the diodes operating in microwave integrated circuits intensely emit light in the IR range with wavelengths from 890 to 910 nm. The obtained results indicate the necessity of taking into account the features of recombination processes in the GaAs-based microwave p-i-n diodes.

  7. Improved charge collection of the buried p-i-n a-Si:H radiation detectors

    International Nuclear Information System (INIS)

    Fujieda, I.; Cho, G.; Conti, M.; Drewery, J.; Kaplan, S.N.; Perez-Mendez, V.; Qureshi, S.; Street, R.A.

    1989-09-01

    Charge collection in hydrogenated amorphous silicon (a-Si:H) radiation detectors is improved for high LET particle detection by adding thin intrinsic layers to the usual p-i-n structure. This buried p-i-n structure enables us to apply higher bias and the electric field is enhanced. When irradiated by 5.8 MeV α particles, the 5.7 μm thick buried p-i-n detector with bias 300V gives a signal size of 60,000 electrons, compared to about 20,000 electrons with the simple p-i-n detectors. The improved charge collection in the new structure is discussed. The capability of tailoring the field profile by doping a-Si:H opens a way to some interesting device structures. 17 refs., 7 figs

  8. Signal amplification and leakage current suppression in amorphous silicon p-i-n diodes by field profile tailoring

    International Nuclear Information System (INIS)

    Hong, W.S.; Zhong, F.; Mireshghi, A.; Perez-Mendez, V.

    1999-01-01

    The performance of amorphous silicon p-i-n diodes as radiation detectors in terms of signal amplitude can be greatly improved when there is a built-in signal gain mechanism. The authors describe an avalanche gain mechanism which is achieved by introducing stacked intrinsic, p-type, and n-type layers into the diode structure. They replaced the intrinsic layer of the conventional p-i-n diode with i 1 -p-i 2 -n-i 3 multilayers. The i 2 layer (typically 1 ∼ 3 microm) achieves an electric field > 10 6 V/cm, while maintaining the p-i interfaces to the metallic contact at electric fields 4 V/cm, when the diode is fully depleted. For use in photo-diode applications the whole structure is less than 10 microm thick. Avalanche gains of 10 ∼ 50 can be obtained when the diode is biased to ∼ 500 V. Also, dividing the electrodes to strips of 2 microm width and 20 microm pitch reduced the leakage current up to an order of magnitude, and increased light transmission without creating inactive regions

  9. Waveguide photonic crystals with characteristics controlled with p-i-n diodes

    International Nuclear Information System (INIS)

    Usanov, D. A.; Skripal, A. V.; Abramov, A. V.; Bogolyubov, A. S.; Skvortsov, V. S.; Merdanov, M. K.

    2010-01-01

    A one-dimensional waveguide photonic structure-specifically, a photonic crystal with a controllable frequency characteristic-is designed. The central frequency of the spectral window of the photonic crystal can be tuned by choosing the parameters of disturbance of periodicity in the photonic crystal, whereas the transmission coefficient at a particular frequency can be controlled by varying the voltage at a p-i-n diode. It is shown that the possibility exists of using the waveguide photonic crystal to design a microwave device operating in the 3-cm-wavelength region, with a transmission band of 70 MHz at a level 3 dB and the transmission coefficient controllable in the range from -1.5 to -25 dB under variations in the forward voltage bias at the p-i-n diode from zero to 700 mV.

  10. Influence of production technology and design on characteristics neutron-sensitive P-I-N diodes

    International Nuclear Information System (INIS)

    Perevertaylo, V.L.; Kovrygin, V.I.

    2012-01-01

    This paper presents the results of tests on neutron-sensitive p-i-n diode with local p-n junction, which allows to measure not only the integral dose by nonionizing energy loss (NIEL), but also the real-time dose and dose rate because of ionizing energy losses (IEL). The influence of design and process parameters and the lifetime of minority carriers on the radiation characteristics of the device considered. Sensitivity at low doses (from one to ten rad) is limited due to a decrease in the lifetime because of influence of lateral sides of cut. The sensitivity and accuracy of dose can be increased by moving of p-n junction away from the cut surface. The dependence of the voltage drop across the diode on the neutron dose irradiation up to 5 krad received, and the sensitivity was 2 - 3 mV/rad. We have demonstrated that replacement of the bulk p-i-n diode with total p-n junction by new diodes with local p-n junction allow for increase sensitivity, accuracy of dose and application in NIEL and IEL measurements simultaneously. Explanation for the extinction of a direct current through the diode with increasing doses of neutron irradiation proposed

  11. The 1/f noise in a p-i-n diode and in a diode laser below threshold

    NARCIS (Netherlands)

    Fronen, R.J.; Hooge, F.N.

    1991-01-01

    --A theoretical treatment is given of number fluctuations induced by mobility fluctuations in the intrinsic region of a p-i-n diode. Mobility fluctuations lead to fluctuations in voltage across the intrinsic region. In the a.c. short-circuit situation, fluctuations across the intrinsic region result

  12. Design and characterization of GaN p-i-n diodes for betavoltaic devices

    Science.gov (United States)

    Khan, Muhammad R.; Smith, Joshua R.; Tompkins, Randy P.; Kelley, Stephen; Litz, Marc; Russo, John; Leathersich, Jeff; Shahedipour-Sandvik, Fatemeh (Shadi); Jones, Kenneth A.; Iliadis, Agis

    2017-10-01

    The performance of gallium nitride (GaN) p-i-n diodes were investigated for use as a betavoltaic device. Dark IV measurements showed a turn on-voltage of approximately 3.2 V, specific-on-resistance of 15.1 mΩ cm2 and a reverse leakage current of -0.14 mA/cm2 at -10 V. A clear photo-response was observed when IV curves were measured under a light source at a wavelength of 310 nm (4.0 eV). In addition, GaN p-i-n diodes were tested under an electron-beam in order to simulate common beta radiation sources ranging from that of 3H (5.6 keV average) to 63Ni (17 keV average). From this data, we estimated output powers of 53 nW and 750 nW with overall efficiencies of 0.96% and 4.4% for our device at incident electron energies of 5.6 keV and 17 keV corresponding to 3H and 63Ni beta sources respectively.

  13. High performance p-i-n CdTe and CdZnTe detectors

    CERN Document Server

    Khusainov, A K; Ilves, A G; Morozov, V F; Pustovoit, A K; Arlt, R D

    1999-01-01

    A breakthrough in the performance of p-i-n CdTe and CdZnTe detectors is reported. The detector stability has been significantly improved, allowing their use in precise gamma and XRF applications. Detectors with energy resolution close to Si and Ge were produced operating with only -30--35 deg. C cooling (by a Peltier cooler of 15x15x10 mm size and a consumed power less than 5 W). Presently detectors with volume of up to 300 mm sup 3 are available. In terms of photoelectric effect efficiency it corresponds to HPGe detectors with volumes of about 1.5 cm sup 3. The possibilities of further improvement of CdTe and CdZnTe detector characteristics are discussed in this paper.

  14. Lead Halide Perovskite Photovoltaic as a Model p-i-n Diode.

    Science.gov (United States)

    Miyano, Kenjiro; Tripathi, Neeti; Yanagida, Masatoshi; Shirai, Yasuhiro

    2016-02-16

    The lead halide perovskite photovoltaic cells, especially the iodide compound CH3NH3PbI3 family, exhibited enormous progress in the energy conversion efficiency in the past few years. Although the first attempt to use the perovskite was as a sensitizer in a dye-sensitized solar cell, it has been recognized at the early stage of the development that the working of the perovskite photovoltaics is akin to that of the inorganic thin film solar cells. In fact, theoretically perovskite is always treated as an ordinary direct band gap semiconductor and hence the perovskite photovoltaics as a p-i-n diode. Despite this recognition, research effort along this line of thought is still in pieces and incomplete. Different measurements have been applied to different types of devices (different not only in the materials but also in the cell structures), making it difficult to have a coherent picture. To make the situation worse, the perovskite photovoltaics have been plagued by the irreproducible optoelectronic properties, most notably the sweep direction dependent current-voltage relationship, the hysteresis problem. Under such circumstances, it is naturally very difficult to analyze the data. Therefore, we set out to make hysteresis-free samples and apply time-tested models and numerical tools developed in the field of inorganic semiconductors. A series of electrical measurements have been performed on one type of CH3NH3PbI3 photovoltaic cells, in which a special attention was paid to ensure that their electronic reproducibility was better than the fitting error in the numerical analysis. The data can be quantitatively explained in terms of the established models of inorganic semiconductors: current/voltage relationship can be very well described by a two-diode model, while impedance spectroscopy revealed the presence of a thick intrinsic layer with the help of a numerical solver, SCAPS, developed for thin film solar cell analysis. These results point to that CH3NH3PbI3 is an

  15. Silicon Waveguide with Lateral p-i-n Diode for Nonlinearity Compensation by On-Chip Optical Phase Conjugation

    DEFF Research Database (Denmark)

    Gajda, A.; Da Ros, Francesco; Porto da Silva, Edson

    2018-01-01

    A 1-dB Q-factor improvement through optical phase conjugation in a silicon waveguide with a lateral p-i-n diode enables BER

  16. A final report for Gallium arsenide P-I-N detectors for high-sensitivity imaging of thermal neutrons

    CERN Document Server

    Vernon, S M

    1999-01-01

    This SBIR Phase I developed neutron detectors made FR-om gallium arsenide (GaAs) p-type/ intrinsic/n-type (P-I-N) diodes grown by metalorganic chemical vapor deposition (MOCVD) onto semi-insulating (S1) bulk GaAs wafers. A layer of isotonically enriched boron-10 evaporated onto the FR-ont surface serves to convert incoming neutrons into lithium ions and a 1.47 MeV alpha particle which creates electron-hole pairs that are detected by the GaAs diode. Various thicknesses of ''intrinsic'' (I) undoped GaAs were tested, as was use of a back-surface field (BSF) formed FR-om a layer of Al sub x Ga sub 1 sub - sub x As. Schottky-barrier diodes formed FR-om the same structures without the p+ GaAs top layer were tested as a comparison. After mesa etching and application of contacts, devices were tested in visible light before application of the boron coating. Internal quantum efficiency (IQE) of the best diode near the GaAs bandedge is over 90%. The lowest dark current measured is 1 x 10 sup - sup 1 sup 2 amps at -1 V o...

  17. Characterization of Lateral Structure of the p-i-n Diode for Thin-Film Silicon Solar Cell.

    Science.gov (United States)

    Kiaee, Zohreh; Joo, Seung Ki

    2018-03-01

    The lateral structure of the p-i-n diode was characterized for thin-film silicon solar cell application. The structure can benefit from a wide intrinsic layer, which can improve efficiency without increasing cell thickness. Compared with conventional thin-film p-i-n cells, the p-i-n diode lateral structure exploited direct light irradiation on the absorber layer, one-side contact, and bifacial irradiation. Considering the effect of different carrier lifetimes and recombinations, we calculated efficiency parameters by using a commercially available simulation program as a function of intrinsic layer width, as well as the distance between p/i or n/i junctions to contacts. We then obtained excellent parameter values of 706.52 mV open-circuit voltage, 24.16 mA/Cm2 short-circuit current, 82.66% fill factor, and 14.11% efficiency from a lateral cell (thickness = 3 μm; intrinsic layer width = 53 μm) in monofacial irradiation mode (i.e., only sunlight from the front side was considered). Simulation results of the cell without using rear-side reflector in bifacial irradiation mode showed 11.26% front and 9.72% rear efficiencies. Our findings confirmed that the laterally structured p-i-n cell can be a potentially powerful means for producing highly efficient, thin-film silicon solar cells.

  18. BPW34 Commercial p-i-n Diodes for High-Level 1-MeV Neutron Equivalent Fluence Monitoring

    CERN Document Server

    Ravotti, F; Moll, M; Saigne, F

    2008-01-01

    The BPW34 p-i-n diode was characterized at CERN in view of its utilization as radiation monitor at the LHC to cover the broad 1-MeV neutron equivalent fluence (Phieq) range expected for the LHC machine and experiments during operation. Electrical measurements for both forward and reverse bias were used to characterize the device and to understand its behavior under irradiation. When the device is powered forward, a sensitivity to fast hadrons for Phieq > 2 times1012 cm-2 has been observed. With increasing particle fluences the forward I- V characteristics of the diode shifts towards higher voltages. At Phieq > 3times1013 cm-2, the forward characteristic starts to bend back assuming a thyristor-like behavior. An explanation for this phenomenon is given in this article. Finally, detailed radiation-response curves for the forward bias-operation and annealing studies of the diode's forward voltage are presented for proton, neutron and gamma irradiation.

  19. Prediction of the Response of the Commercial BPW34FS Silicon p-i-n Diode Used as Radiation Monitoring Sensors up to Very High Fluences

    CERN Document Server

    Mekki, J; Glaser, M; Moll, M; Dusseau, L

    2010-01-01

    The effect of radiation damage on Silicon p-i-n diodes has been studied. I-V characteristics of BPW34FS silicon p-i-n diodes irradiated with 24 GeV/c protons up to 6.3 x 10(15) n(eq)/cm(2) have been measured and analyzed. A parameterization predicting the radiation response in the fluence range relevant for the use of the diodes as radiation monitors in Super-LHC experiments is presented.

  20. Luminescence in amorphous silicon p-i-n diodes under double-injection dispersive-transport-controlled recombination

    International Nuclear Information System (INIS)

    Han, D.; Wang, K.; Yeh, C.; Yang, L.; Deng, X.; Von Roedern, B.

    1997-01-01

    The temperature and electric-field dependence of the forward bias current and the electroluminescence (EL) in hydrogenated amorphous silicon (a-Si:H) p-i-n and n-i-p diodes have been studied. Both the current and the EL efficiency temperature dependence show three regions depending on either hopping-controlled or multiple-trapping or ballistic transport mechanisms. Comparing the thermalization-controlled geminate recombination processes of photoluminescence to the features of EL, the differences can be explained by transport-controlled nongeminate recombination in trap-rich materials. copyright 1997 The American Physical Society

  1. Resonant metallic nanostructure for enhanced two-photon absorption in a thin GaAs p-i-n diode

    Energy Technology Data Exchange (ETDEWEB)

    Portier, Benjamin; Pardo, Fabrice; Péré-Laperne, Nicolas; Steveler, Emilie; Dupuis, Christophe; Bardou, Nathalie; Lemaître, Aristide; Pelouard, Jean-Luc, E-mail: jean-luc.pelouard@lpn.cnrs.fr [Laboratoire de Photonique et de Nanostructures (LPN-CNRS), Route de Nozay, 91460 Marcoussis (France); Vest, Benjamin; Jaeck, Julien; Rosencher, Emmanuel [ONERA The French Aerospace Lab, Chemin de la Hunière, F-91760 Palaiseau (France); Haïdar, Riad [ONERA The French Aerospace Lab, Chemin de la Hunière, F-91760 Palaiseau (France); École Polytechnique, Département de Physique, F-91128 Palaiseau (France)

    2014-07-07

    Degenerate two-photon absorption (TPA) is investigated in a 186 nm thick gallium arsenide (GaAs) p-i-n diode embedded in a resonant metallic nanostructure. The full device consists in the GaAs layer, a gold subwavelength grating on the illuminated side, and a gold mirror on the opposite side. For TM-polarized light, the structure exhibits a resonance close to 1.47 μm, with a confined electric field in the intrinsic region, far from the metallic interfaces. A 109 times increase in photocurrent compared to a non-resonant device is obtained experimentally, while numerical simulations suggest that both gain in TPA-photocurrent and angular dependence can be further improved. For optimized grating parameters, a maximum gain of 241 is demonstrated numerically and over incidence angle range of (−30°; +30°).

  2. Resonant metallic nanostructure for enhanced two-photon absorption in a thin GaAs p-i-n diode

    International Nuclear Information System (INIS)

    Portier, Benjamin; Pardo, Fabrice; Péré-Laperne, Nicolas; Steveler, Emilie; Dupuis, Christophe; Bardou, Nathalie; Lemaître, Aristide; Pelouard, Jean-Luc; Vest, Benjamin; Jaeck, Julien; Rosencher, Emmanuel; Haïdar, Riad

    2014-01-01

    Degenerate two-photon absorption (TPA) is investigated in a 186 nm thick gallium arsenide (GaAs) p-i-n diode embedded in a resonant metallic nanostructure. The full device consists in the GaAs layer, a gold subwavelength grating on the illuminated side, and a gold mirror on the opposite side. For TM-polarized light, the structure exhibits a resonance close to 1.47 μm, with a confined electric field in the intrinsic region, far from the metallic interfaces. A 109 times increase in photocurrent compared to a non-resonant device is obtained experimentally, while numerical simulations suggest that both gain in TPA-photocurrent and angular dependence can be further improved. For optimized grating parameters, a maximum gain of 241 is demonstrated numerically and over incidence angle range of (−30°; +30°).

  3. Very high resolution detection of gamma radiation at room-temperature using P-I-N detectors of CdZnTe and HgCdTe

    Science.gov (United States)

    Hamilton, W. J.; Rhiger, D. R.; Sen, S.; Kalisher, M. H.; James, K.; Reid, C. P.; Gerrish, V.; Baccash, C. O.

    1994-08-01

    High-energy photon detectors have been constructed by engineering and fabricating p-i-n diode structures consisting of bulk CdZnTe and epitaxial HgCdTe. The p-i-n structure was obtained by liquid-phase epitaxial growth of p and n doped HgCdTe layers on 'intrinsic' CdZnTe material about 1mm thick and approximately 25mm square. Curve tracing shows I-V curves with diode characteristics having resistivity above 1011 Omega -cm and leakage current of less than 400 pA to about - 60V reverse bias on a typical test piece approximately 5 x 8 x 1 mm. Spectra of similar test pieces have been obtained at room temperature with various nuclear isotopic sources over the range of 22 keV to 662 keV which show exceptionally high energy resolution. Resolution as good as 1.82% FWHM was obtained for the 356 keV line of 133Ba with a P/V = 3.4. The performance of these detectors combined with contemporary infrared technology capable of fabricating 2D arrays of these II-VI materials opens up manifold exciting applications in astrophysics, medical, industrial, environmental, and defense spectroscopy and imaging.

  4. A Needle-Type p-i-n Junction Semiconductor Detector for In-Vivo Measurement of Beta Tracer Activity

    Energy Technology Data Exchange (ETDEWEB)

    Lauber, A; Rosencrantz, B

    1964-10-15

    A miniature detector probe has been developed for in-vivo detection of beta tracer activity. A lithium-drifted p-i-n detector shaped as a cylinder 0.9 mm in diameter and 3 mm long acts as the sensing element. The detector is encased in a stainless steel tube 50 mm long, fastened to a holder fitted with a miniature coaxial contact. The free end of the tube has a syringe-like, entirely tight tip. The steel tube has an outer diameter of 1.4 mm except for 10 mm at the free end where the outer diameter is 1.1 mm corresponding to a wall thickness of 005 mm. The detector is placed in the 1.1 mm part of the tube. The construction and the properties of the probe are described.

  5. A Needle-Type p-i-n Junction Semiconductor Detector for In-Vivo Measurement of Beta Tracer Activity

    International Nuclear Information System (INIS)

    Lauber, A.; Rosencrantz, B.

    1964-10-01

    A miniature detector probe has been developed for in-vivo detection of beta tracer activity. A lithium-drifted p-i-n detector shaped as a cylinder 0.9 mm in diameter and 3 mm long acts as the sensing element. The detector is encased in a stainless steel tube 50 mm long, fastened to a holder fitted with a miniature coaxial contact. The free end of the tube has a syringe-like, entirely tight tip. The steel tube has an outer diameter of 1.4 mm except for 10 mm at the free end where the outer diameter is 1.1 mm corresponding to a wall thickness of 005 mm. The detector is placed in the 1.1 mm part of the tube. The construction and the properties of the probe are described

  6. Recombination centers and electrical characteristics in silicon power p-i-n diodes irradiated with high energy electrons

    International Nuclear Information System (INIS)

    Fuochi, P.G.; Martelli, A.; Passerini, B.; Zambelli, M.

    1988-01-01

    Recombination centers introduced by irradiation with 12 MeV electrons in large area silicon diodes with p-i-n structure are studied with the Deep Level Transient Spectroscopy technique (DLTS). The effects of these levels on the electrical characteristics of the devices are related to their position Esub(t) in the silicon forbidden gap, their concentration and their electron capture cross section. Changes of defect configuration during an annealing process at 360 0 C have been observed and a detailed analysis of the DLTS spectra has shown a complex defect pattern. Four major recombination centers have been identified: Esub(c) - Esub(t) = 0.17 eV, Esub(c) - Esub(t) = 0.19 eV, Esub(c) -Esub(t) 0.31 eV, Esub(c) - Esub(t) = 0.39 eV, where Esub(c) is the energy corresponding to the lower limit of the conduction band. The first energy level, known as A-center, is the dominant recombination level controlling the minority carrier lifetime after room temperature irradiation. As the annealing proceeds the center at Esub(c) - Esub(t) = 0.31 eV becomes the dominant one. The complex structure of the centers has been studied and demonstrated with the aid of proper modelling implemented on a set of numerical simulation tools. In this way it has been possible to analyze more accurately the defect kinetics during annealing. The study of the defect behaviour during the annealing process has resulted in an improved application of electron irradiation as a standard production technique in the manufacturing process of high power devices. (author)

  7. Origin analysis of expanded stacking faults by applying forward current to 4H-SiC p-i-n diodes

    Science.gov (United States)

    Hayashi, Shohei; Naijo, Takanori; Yamashita, Tamotsu; Miyazato, Masaki; Ryo, Mina; Fujisawa, Hiroyuki; Miyajima, Masaaki; Senzaki, Junji; Kato, Tomohisa; Yonezawa, Yoshiyuki; Kojima, Kazutoshi; Okumura, Hajime

    2017-08-01

    Stacking faults expanded by the application of forward current to 4H-SiC p-i-n diodes were observed using a transmission electron microscope to investigate the expansion origin. It was experimentally confirmed that long-zonal-shaped stacking faults expanded from basal-plane dislocations converted into threading edge dislocations. In addition, stacking fault expansion clearly penetrated into the substrate to a greater depth than the dislocation conversion point. This downward expansion of stacking faults strongly depends on the degree of high-density minority carrier injection.

  8. Monte Carlo simulation of THz radiation from GaAs p-i-n diodes under high electric fields using an extended valley model

    International Nuclear Information System (INIS)

    Dinh Nhu Thao

    2008-01-01

    We have applied a self-consistent ensemble Monte Carlo simulation procedure using an extended valley model to consider the THz radiation from GaAs p-i-n diodes under high electric fields. The present calculation has shown an important improvement of the numerical results when using this model instead of the usual valley model. It has been shown the importance of the full band-structure in the simulation of processes in semiconductors, especially under the influence of high electric fields. (author)

  9. Dual-polarization wavelength conversion of 16-QAM signals in a single silicon waveguide with a lateral p-i-n diode [Invited

    DEFF Research Database (Denmark)

    Da Ros, Francesco; Gajda, Andrzej; Liebig, Erik

    2018-01-01

    with an optical signal-to-noise ratio penalty below 0.7 dB. High-quality converted signals are generated thanks to the low polarization dependence (≤0.5 dB) and the high conversion efficiency (CE) achievable. The strong Kerr nonlinearity in silicon and the decrease of detrimental free-carrier absorption due......A polarization-diversity loop with a silicon waveguide with a lateral p-i-n diode as a nonlinear medium is used to realize polarization insensitive four-wave mixing. Wavelength conversion of seven dual-polarization 16-quadrature amplitude modulation (QAM) signals at 16 GBd is demonstrated...

  10. CdS-based p-i-n diodes using indium and copper doped CdS films by pulsed laser deposition

    International Nuclear Information System (INIS)

    Hernandez-Como, N; Berrellez-Reyes, F; Mizquez-Corona, R; Ramirez-Esquivel, O; Mejia, I; Quevedo-Lopez, M

    2015-01-01

    In this work we report a method to dope cadmium sulfide (CdS) thin films using pulsed laser deposition. Doping is achieved during film growth at substrate temperatures of 100 °C by sequential deposition of the CdS and the dopant material. Indium sulfide and copper disulfide targets were used as the dopant sources for n-type and p-type doping, respectively. Film resistivities as low as 0.2 and 1 Ω cm were achieved for indium and copper doped films, respectively. Hall effect measurements demonstrated the change in conductivity type from n-type to p-type when the copper dopants are incorporated into the film. The controlled incorporation of indium or copper, in the undoped CdS film, results in substitutional defects in the CdS, which increases the electron and hole concentration up to 4 × 10 18 cm −3 and 3 × 10 20 cm −3 , respectively. The results observed with CdS doping can be expanded to other chalcogenides material compounds by just selecting different targets. With the optimized doped films, CdS-based p-i-n diodes were fabricated yielding an ideality factor of 4, a saturation current density of 2 × 10 −6 A cm −2 and a rectification ratio of three orders of magnitude at ±3 V. (paper)

  11. Portable gamma- and X-ray analyzers based on CdTe p-i-n detectors

    CERN Document Server

    Khusainov, A K; Bahlanov, S V; Derbin, A V; Ivanov, V V; Lysenko, V V; Morozov, F; Mouratov, V G; Muratova, V N; Petukhov, Y A; Pirogov, A M; Polytsia, O P; Saveliev, V D; Solovei, V A; Yegorov, K A; Zhucov, M P

    1999-01-01

    Several portable instruments are designed using previously reported CdTe detector technology. These can be divided into three groups according to their energy ranges: (1) 3-30 keV XRF analyzers, (2) 5-120 keV wide range XRF analyzers and (3) gamma-ray spectrometers for operation up to 1500 keV. These instruments are used to inspect several hundreds of samples in situ during a working day in applications such as a metal alloy verification at customs control. Heavy metals are identified through a 3-100 mm thick package with these instruments. Surface contamination by heavy metals (for example toxins such as Hg, Th and Pb in housing environmental control), the determination of Pb concentration in gasoline, geophysical control in mining, or nuclear material control are other applications. The weight of these XRF probes is about 1 kg and two electronic designs are used: one with embedded computer and another based on a standard portable PC. The instruments have good precision and high productivity for measurements...

  12. Continuous Holdup Measurements with Silicon P-I-N Photodiodes

    International Nuclear Information System (INIS)

    Bell, Z.W.; Oberer, R.B.; Williams, J.A.; Smith, D.E.; Paulus, M.J.

    2002-01-01

    We report on the behavior of silicon P-I-N photodiodes used to perform holdup measurements on plumbing. These detectors differ from traditional scintillation detectors in that no high-voltage is required, no scintillator is used (gamma and X rays are converted directly by the diode), and they are considerably more compact. Although the small size of the diodes means they are not nearly as efficient as scintillation detectors, the diodes' size does mean that a detector module, including one or more diodes, pulse shaping electronics, analog-to-digital converter, embedded microprocessor, and digital interface can be realized in a package (excluding shielding) the size of a pocket calculator. This small size, coupled with only low-voltage power requirement, completely solid-state realization, and internal control functions allows these detectors to be strategically deployed on a permanent basis, thereby reducing or eliminating the need for manual holdup measurements. In this paper, we report on the measurement of gamma and X rays from 235 U and 238 U contained in steel pipe. We describe the features of the spectra, the electronics of the device and show how a network of them may be used to improve estimates of inventory in holdup

  13. Influence of basal-plane dislocation structures on expansion of single Shockley-type stacking faults in forward-current degradation of 4H-SiC p-i-n diodes

    Science.gov (United States)

    Hayashi, Shohei; Yamashita, Tamotsu; Senzaki, Junji; Miyazato, Masaki; Ryo, Mina; Miyajima, Masaaki; Kato, Tomohisa; Yonezawa, Yoshiyuki; Kojima, Kazutoshi; Okumura, Hajime

    2018-04-01

    The origin of expanded single Shockley-type stacking faults in forward-current degradation of 4H-SiC p-i-n diodes was investigated by the stress-current test. At a stress-current density lower than 25 A cm-2, triangular stacking faults were formed from basal-plane dislocations in the epitaxial layer. At a stress-current density higher than 350 A cm-2, both triangular and long-zone-shaped stacking faults were formed from basal-plane dislocations that converted into threading edge dislocations near the interface between the epitaxial layer and the substrate. In addition, the conversion depth of basal-plane dislocations that expanded into the stacking fault was inside the substrate deeper than the interface. These results indicate that the conversion depth of basal-plane dislocations strongly affects the threshold stress-current density at which the expansion of stacking faults occurs.

  14. Comparison of silicon pin diode detector fabrication processes using ion implantation and thermal doping

    International Nuclear Information System (INIS)

    Zhou, C.Z.; Warburton, W.K.

    1996-01-01

    Two processes for the fabrication of silicon p-i-n diode radiation detectors are described and compared. Both processes are compatible with conventional integrated-circuit fabrication techniques and yield very low leakage currents. Devices made from the process using boron thermal doping have about a factor of 2 lower leakage current than those using boron ion implantation. However, the boron thermal doping process requires additional process steps to remove boron skins. (orig.)

  15. Ultrafast photoconductor detector-laser-diode transmitter

    International Nuclear Information System (INIS)

    Wang, C.L.; Davis, B.A.; Davies, T.J.; Nelson, M.A.; Thomas, M.C.; Zagarino, P.A.

    1987-01-01

    We report the results of an experiment in which we used an ultrafast, photoconductive, radiation detector to drive a fast laser-diode transmitter. When we irradiated the neutron-damaged Cr-doped GaAs detector with 17-MeV electron beams, the temporal response was measured to be less than 30 ps. The pulses from this detector modulated a fast GaAlAs laser diode to transmit the laser output through 30- and 1100-m optical fibers. Preliminary results indicate that 50- and 80-ps time resolutions, respectively, are obtainable with these fibers. We are now working to integrate the photoconductive detector and the laser diode transmitter into a single chip

  16. Ultrafast photoconductive detector-laser-diode transmitter

    International Nuclear Information System (INIS)

    Wang, C.L.; Davies, T.J.; Nelson, M.A.; Thomas, M.C.; Zagarino, P.A.; Davis, B.A.

    1987-01-01

    The authors report the results of an experiment in which they used an ultrafast, photoconductive, radiation detector to drive a fast laser-diode transmitter. When they irradiated the neutron-damaged Cr-doped Ga/As detector with 17-MeV electron beams, the temporal response of was measured to be less than 30 ps. The pulses from this detector modulated a fast GaAlAs laser diode to transmit the laser output through 30- and 1100-m optical fibers. Preliminary results indicate that 50- and 80-ps time resolutions, respectively, are obtainable with these fibers. They are now working to integrate the photoconductive detector and the laser diode transmitter into a single chip

  17. Photon response of silicon diode neutron detectors

    International Nuclear Information System (INIS)

    McCall, R.C.; Jenkins, T.M.; Oliver, G.D. Jr.

    1976-07-01

    The photon response of silicon diode neutron detectors was studied to solve the problem on detecting neutrons in the presence of high energy photons at accelerator neutron sources. For the experiment Si diodes, Si discs, and moderated activation foil detectors were used. The moderated activation foil detector consisted of a commercial moderator and indium foils 2'' in diameter and approximately 2.7 grams each. The moderator is a cylinder of low-density polyethylene 6 1 / 4 '' in diameter by 6 1 / 16 '' long covered with 0.020'' of cadmium. Neutrons are detected by the reaction 115 In (n,γ) 116 In(T/sub 1 / 2 / = 54 min). Photons cannot be detected directly but photoneutrons produced in the moderator assembly can cause a photon response. The Si discs were thin slices of single-crystal Si about 1.4 mils thick and 1'' in diameter which were used as activation detectors, subsequently being counted on a thin-window pancake G.M. counter. The Si diode fast neutron dosimeter 5422, manufactured by AB Atomenergi in Studsvik, Sweden, consists of a superdoped silicon wafer with a base width of 0.050 inches between two silver contacts coated with 2 mm of epoxy. For this experiment, the technique of measuring the percent change of voltage versus dose was used. Good precision was obtained using both unirradiated and preirradiated diodes. All diodes, calibrated against 252 CF in air,were read out 48 hours after irradiation to account for any room temperature annealing. Results are presented and discussed

  18. One-cm-thick Si detector at LHe temperature

    Energy Technology Data Exchange (ETDEWEB)

    Braggio, C. [Dipartimento di Fisica, Universita di Ferrara, Via Saragat 1, 44100 Ferrara (Italy)], E-mail: braggio@pd.infn.it; Bressi, G. [INFN, Sez. di Pavia, Via Bassi 6, 27100 Pavia (Italy); Carugno, G. [INFN, Sez. di Padova, Via Marzolo 8, 35131 Padova (Italy); Galeazzi, G. [Laboratori Nazionali di Legnaro, Via dell' Universita 1, 35020 Legnaro (Italy); Serafin, A. [Dipartimento di Fisica, Universita di Padova, Via Marzolo 8, 35131 Padova (Italy)

    2007-10-11

    A silicon p-i-n diode of thickness 1 cm has been studied experimentally at liquid helium temperature. This preliminary study is aimed at the construction of a much bigger detector to detect low energy neutrino events.

  19. One-cm-thick Si detector at LHe temperature

    International Nuclear Information System (INIS)

    Braggio, C.; Bressi, G.; Carugno, G.; Galeazzi, G.; Serafin, A.

    2007-01-01

    A silicon p-i-n diode of thickness 1 cm has been studied experimentally at liquid helium temperature. This preliminary study is aimed at the construction of a much bigger detector to detect low energy neutrino events

  20. Junction depth dependence of breakdown in silicon detector diodes

    International Nuclear Information System (INIS)

    Beck, G.A.; Carter, A.A.; Carter, J.R.; Greenwood, N.M.; Lucas, A.D.; Munday, D.J.; Pritchard, T.W.; Robinson, D.; Wilburn, C.D.; Wyllie, K.

    1996-01-01

    The high voltage capability of detector diodes fabricated in the planar process is limited by the high field generated at the edge of the junction.We have fabricated diodes with increased junction depth with respect to our standard process and find a significantly higher breakdown voltage,in reasonable agreement with previous studies of junction breakdown. (orig.)

  1. Characterisation of different hole transport materials as used in organic p-i-n solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Pfuetzner, Steffen; Petrich, Annette; Koch, Maik; Riede, Moritz; Leo, Karl [Institut fuer Angewandte Photophysik, Technische Universitaet Dresden (Germany); Malbrich, Christine [Leibniz-Institut fuer Festkoerper- und Werkstoffforschung, Dresden (Germany); Hildebrandt, Dirk; Pfeiffer, Martin [Heliatek GmbH, Dresden (Germany)

    2008-07-01

    This work focuses on the replacement of hole transport material MeO-TPD, which has been used so far in organic p-i-n- solar cells despite its has unfavourable behaviour at elevated temperatures. For this reason, different characterisation and investigations of the hole transport materials PV-TPD, PV-TPDoM, Di-NPB and MeO-Spiro-TPD were done, i.e. dopability, hole mobility, absorption, reflection, cyclic voltametry and glass transition temperature were measured. With simplified structures, e.g. m-i-p diodes, and simplified solar cells, consisting of the blue absorbing fullerene C{sub 60} as acceptor and the transparent donor material 4P-TPD, further specific material properties were determined.

  2. Fabrication of detectors and transistors on high-resistivity silicon

    International Nuclear Information System (INIS)

    Holland, S.

    1988-06-01

    A new process for the fabrication of silicon p-i-n diode radiation detectors is described. The utilization of backside gettering in the fabrication process results in the actual physical removal of detrimental impurities from critical device regions. This reduces the sensitivity of detector properties to processing variables while yielding low diode reverse-leakage currents. In addition, gettering permits the use of processing temperatures compatible with integrated-circuit fabrication. P-channel MOSFETs and silicon p-i-n diodes have been fabricated simultaneously on 10 kΩ/centerreverse arrowdot/cm silicon using conventional integrated-circuit processing techniques. 25 refs., 5 figs

  3. Constant-current regulator improves tunnel diode threshold-detector performance

    Science.gov (United States)

    Cancro, C. A.

    1965-01-01

    Grounded-base transistor is placed in a tunnel diode threshold detector circuit, and a bias voltage is applied to the tunnel diode. This provides the threshold detector with maximum voltage output and overload protection.

  4. Integrated Amorphous Silicon p-i-n Temperature Sensor for CMOS Photonics

    Directory of Open Access Journals (Sweden)

    Sandro Rao

    2016-01-01

    Full Text Available Hydrogenated amorphous silicon (a-Si:H shows interesting optoelectronic and technological properties that make it suitable for the fabrication of passive and active micro-photonic devices, compatible moreover with standard microelectronic devices on a microchip. A temperature sensor based on a hydrogenated amorphous silicon p-i-n diode integrated in an optical waveguide for silicon photonics applications is presented here. The linear dependence of the voltage drop across the forward-biased diode on temperature, in a range from 30 °C up to 170 °C, has been used for thermal sensing. A high sensitivity of 11.9 mV/°C in the bias current range of 34–40 nA has been measured. The proposed device is particularly suitable for the continuous temperature monitoring of CMOS-compatible photonic integrated circuits, where the behavior of the on-chip active and passive devices are strongly dependent on their operating temperature.

  5. Responses of diode detectors to radiation beams from teletherapy machines

    International Nuclear Information System (INIS)

    Malinda, Lora; Nasukha

    2003-01-01

    Responses of diode detectors to radiation beams from teletherapy machines. It has been carried out responses to two sets of diode detector by using the beams of teletherapy Co-60 and medical linear accelerator. Each set of consist of 8 diode detectors was irradiated by using gamma beams from teletherapy Co-60 machines and 6 MV and 10 MV foron beams from medical linear accelerator and 6.9.12.16. and 20 MeV electron beams from medical linear accelerator. The detectors were positioned on the phantom circularly and radially and electronic equilibrium condition for all type and energy beams. It was found that every detectors had own individual response and it is not to be uniformity, since the fluctuation in between 16.6 % to 30.9 %. All detectors responses are linear to gamma and foron beams, and also for energy above 6 MeV for electron beams. Nonlinearity response occurs for 6 MeV electron beam, it is probably from the assumption of electronic equilibrium

  6. Application of AXUV photoelectric diode detector

    International Nuclear Information System (INIS)

    Yu Guogang; Pan Ningdong; Liu Yi

    2006-01-01

    Based on the photo-voltage effect of PN junction, two kinds of detector are introduced. Newly designed AXUV (Absolute Extreme Ultra Violet) photodiodes array radiation diagnostic system is installed in the HA-2A tokamak device. The advantages of AXUV detector are its near theoretical high quantum efficiency, high sensitivity, high responsibility, electromagnetic and vibration immunity, low price. (authors)

  7. Application of a diode-array detector in capillary electrophoresis

    NARCIS (Netherlands)

    Beck, W.; Hoek, van R.; Engelhardt, H.

    1993-01-01

    In the last decade diode-array detection has proved to be extremely useful in high performance liquid chromatography in recording UV-visible spectra directly and on-line in the column effluent. In capillary electrophoresis (CE) only fast-scanning detectors with long scan times (up to 2 s) are

  8. Particle detectors based on InP Schottky diodes

    Czech Academy of Sciences Publication Activity Database

    Yatskiv, Roman; Grym, Jan

    2012-01-01

    Roč. 10, č. 7 (2012), C100051-C100055 ISSN 1748-0221 R&D Projects: GA MŠk(CZ) OC10021; GA MŠk LD12014 Institutional support: RVO:67985882 Keywords : Particle detector * High purity InP layer * Schottky diode Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering Impact factor: 1.869, year: 2011

  9. Application of AXUV diode detectors at ASDEX Upgrade

    Science.gov (United States)

    Bernert, M.; Eich, T.; Burckhart, A.; Fuchs, J. C.; Giannone, L.; Kallenbach, A.; McDermott, R. M.; Sieglin, B.

    2014-03-01

    In the ASDEX Upgrade tokamak, a radiation measurement for a wide spectral range, based on semiconductor detectors, with 256 lines of sight and a time resolution of 5μs was recently installed. In combination with the foil based bolometry, it is now possible to estimate the absolutely calibrated radiated power of the plasma on fast timescales. This work introduces this diagnostic based on AXUV (Absolute eXtended UltraViolet) n-on-p diodes made by International Radiation Detectors, Inc. The measurement and the degradation of the diodes in a tokamak environment is shown. Even though the AXUV diodes are developed to have a constant sensitivity for all photon energies (1 eV-8 keV), degradation leads to a photon energy dependence of the sensitivity. The foil bolometry, which is restricted to a time resolution of less than 1 kHz, offers a basis for a time dependent calibration of the diodes. The measurements of the quasi-calibrated diodes are compared with the foil bolometry and found to be accurate on the kHz time scale. Therefore, it is assumed, that the corrected values are also valid for the highest time resolution (200 kHz). With this improved diagnostic setup, the radiation induced by edge localized modes is analyzed on fast timescales.

  10. Application of AXUV diode detectors at ASDEX Upgrade

    International Nuclear Information System (INIS)

    Bernert, M.; Eich, T.; Burckhart, A.; Fuchs, J. C.; Giannone, L.; Kallenbach, A.; McDermott, R. M.; Sieglin, B.

    2014-01-01

    In the ASDEX Upgrade tokamak, a radiation measurement for a wide spectral range, based on semiconductor detectors, with 256 lines of sight and a time resolution of 5μs was recently installed. In combination with the foil based bolometry, it is now possible to estimate the absolutely calibrated radiated power of the plasma on fast timescales. This work introduces this diagnostic based on AXUV (Absolute eXtended UltraViolet) n-on-p diodes made by International Radiation Detectors, Inc. The measurement and the degradation of the diodes in a tokamak environment is shown. Even though the AXUV diodes are developed to have a constant sensitivity for all photon energies (1 eV-8 keV), degradation leads to a photon energy dependence of the sensitivity. The foil bolometry, which is restricted to a time resolution of less than 1 kHz, offers a basis for a time dependent calibration of the diodes. The measurements of the quasi-calibrated diodes are compared with the foil bolometry and found to be accurate on the kHz time scale. Therefore, it is assumed, that the corrected values are also valid for the highest time resolution (200 kHz). With this improved diagnostic setup, the radiation induced by edge localized modes is analyzed on fast timescales

  11. Dose rate and SDD dependence of commercially available diode detectors

    International Nuclear Information System (INIS)

    Saini, Amarjit S.; Zhu, Timothy C.

    2004-01-01

    The dose-rate dependence of commercially available diode detectors was measured under both high instantaneous dose-rate (pulsed) and low dose rate (continuous, Co-60) radiation. The dose-rate dependence was measured in an acrylic miniphantom at a 5-cm depth in a 10x10 cm 2 collimator setting, by varying source-to-detector distance (SDD) between at least 80 and 200 cm. The ratio of a normalized diode reading to a normalized ion chamber reading (both at SDD=100 cm) was used to determine diode sensitivity ratio for pulsed and continuous radiation at different SDD. The inverse of the diode sensitivity ratio is defined as the SDD correction factor (SDD CF). The diode sensitivity ratio increased with increasing instantaneous dose rate (or decreasing SDD). The ratio of diode sensitivity, normalized to 4000 cGy/s, varied between 0.988 (1490 cGy/s)-1.023 (38 900 cGy/s) for unirradiated n-type Isorad Gold, 0.981 (1460 cGy/s)-1.026 (39 060 cGy/s) for unirradiated QED Red (n type), 0.972 (1490 cGy/s)-1.068 (38 900 cGy/s) for preirradiated Isorad Red (n type), 0.985 (1490 cGy/s)-1.012 (38 990 cGy/s) for n-type Pt-doped Isorad-3 Gold, 0.995 (1450 cGy/s)-1.020 (21 870 cGy/s) for n-type Veridose Green, 0.978 (1450 cGy/s)-1.066 (21 870 cGy/s) for preirradiated Isorad-p Red, 0.994 (1540 cGy/s)-1.028 (17 870 cGy/s) for p-type preirradiated QED, 0.998 (1450 cGy/s)-1.003 (21 870 cGy/s) for the p-type preirradiated Scanditronix EDP20 3G , and 0.998 (1490 cGy/s)-1.015 (38 880 cGy/s) for Scanditronix EDP10 3G diodes. The p-type diodes do not always show less dose-rate dependence than the n-type diodes. Preirradiation does not always reduce diode dose-rate dependence. A comparison between the SDD dependence measured at the surface of a full scatter phantom and that in a miniphantom was made. Using a direct adjustment of radiation pulse height, we concluded that the SDD dependence of diode sensitivity can be explained by the instantaneous dose-rate dependence if sufficient buildup is

  12. Highly Efficient p-i-n Type Organic Light-emitting Diodes Using ...

    African Journals Online (AJOL)

    operating voltage of 3.0 V. In addition, impressive characteristics of white .... low voltage drops in the transport layers due to their ... thermal evaporation in high vacuum or organic vapor ... the calibrated silicon photodiode above the OLEDs.

  13. Highly Efficient p-i-n Type Organic Light-emitting Diodes Using ...

    African Journals Online (AJOL)

    Both predominantly hole transporting material (TCTA) and an exclusively electron transporting host material (TAZ) are doped with the green phosphorescent dye tris(phenylpyridine)iridium [Ir(ppy)3]. The intrinsic and doped transport and emission layers are formed using a high vacuum controlled co-evaporation deposition ...

  14. Method of producing p-i-n structures by compensation of lithium ions from both side of silicon

    International Nuclear Information System (INIS)

    Muminov, R.A.; Radjapov, S.A.; Saymbetov, A.K.; Tursunkulov, O.M.; Pindurin, Yu.S.

    2007-01-01

    Full text: Semiconductor nuclear radiation detectors are needed to solve certain problems in nuclear spectroscopy. The development of efficiency detectors became possible with advances in growing high purify silicon single crystals with the required properties, satisfying the requirements for obtaining detectors based on them. One important requirement for obtaining detectors with sensitive area is that its resistance must be high. This is achieved by using the lithium ion drift process in the volume of the semiconductor detector. Thus it has been developed and created silicon semiconductor nuclear radiation detectors with vide range of diameter of sensitive area up to 100 mm and thickness (from 1mm to 10mm). At present work a new method for producing p-i-n structures was developed to decrease substantially the time required for compensation of silicon by lithium ions and to eliminate at the same time the negative consequences of holding the crystal at a high temperature and under a high voltage. Drift of lithium ions from two ends of prepared samples is conducted to a depth sufficient for the required compensation of the initial acceptor impurity in silicon. The method described above was used to fabricate a batch of Si(Li) detectors with a 1-10 mm thick and 10-110 mm in diameter sensitive region. The thickness of the sensitive region was determined by performing standard measurements and chemical pigmentation. Advantages of detectors are they have improved properties and less time for compensation of lithium ions. (authors)

  15. Field profile tailoring in a-Si:H radiation detectors

    International Nuclear Information System (INIS)

    Fujieda, I.; Cho, G.; Conti, M.; Drewery, J.; Kaplan, S.N.; Perez-Mendez, V.; Quershi, S.; Wildermuth, D.; Street, R.A.

    1990-03-01

    The capability of tailoring the field profile in reverse-biased a-Si:H diodes by doping and/or manipulating electrode shapes opens a way to many interesting device structures. Charge collection in a-Si:H radiation detectors is improved for high LET particle detection by inserting thin doped layers into the i-layer of the usual p-i-n diode. This buried p-i-n structure enables us to apply higher reverse-bias and the electric field is enhanced in the mid i-layer. Field profiles of the new structures are calculated and the improved charge collection process is discussed. Also discussed is the possibility of field profile tailoring by utilizing the fixed space charges in i-layers and/or manipulating electrode shapes of the reverse-biased p-i-n diodes. 10 refs., 7 figs

  16. Photo-Detectors Integrated with Resonant Tunneling Diodes

    Directory of Open Access Journals (Sweden)

    José M. L. Figueiredo

    2013-07-01

    Full Text Available We report on photo-detectors consisting of an optical waveguide that incorporates a resonant tunneling diode (RTD. Operating at wavelengths around 1.55 μm in the optical communications C band we achieve maximum sensitivities of around 0.29 A/W which is dependent on the bias voltage. This is due to the nature of RTD nonlinear current-voltage characteristic that has a negative differential resistance (NDR region. The resonant tunneling diode photo-detector (RTD-PD can be operated in either non-oscillating or oscillating regimes depending on the bias voltage quiescent point. The oscillating regime is apparent when the RTD-PD is biased in the NDR region giving rise to electrical gain and microwave self-sustained oscillations Taking advantage of the RTD’s NDR distinctive characteristics, we demonstrate efficient detection of gigahertz (GHz modulated optical carriers and optical control of a RTD GHz oscillator. RTD-PD based devices can have applications in generation and optical control of GHz low-phase noise oscillators, clock recovery systems, and fiber optic enabled radio frequency communication systems.

  17. Flat-response x-ray-diode-detector development

    International Nuclear Information System (INIS)

    Tirsell, G.

    1982-10-01

    In this report we discuss the design of an improved sub-nanosecond flat response x-ray diode detector needed for ICF diagnostics. This device consists of a high Z cathode and a complex filter tailored to flatten the response so that the total x-ray energy below 1.5 keV can be measured using a single detector. Three major problems have become evident as a result of our work with the original LLNL design including deviation from flatness due to a peak in the response below 200 eV, saturation at relatively low x-ray fluences, and long term gold cathode instability. We are investigating grazing incidence reflection to reduce the response below 200 eV, new high Z cathode materials for long term stability, and a new complex filter for improved flatness. Better saturation performance will require a modified XRD detector under development with reduced anode to cathode spacing and increased anode bias voltage

  18. Temperature dependent characterization of gallium arsenide X-ray mesa p-i-n photodiodes

    Energy Technology Data Exchange (ETDEWEB)

    Lioliou, G., E-mail: G.Lioliou@sussex.ac.uk; Barnett, A. M. [Semiconductor Materials and Devices Laboratory, Department Engineering and Design, School of Engineering and Informatics, University of Sussex, Falmer, Brighton BN1 9QT (United Kingdom); Meng, X.; Ng, J. S. [Department of Electronic and Electrical Engineering, University of Sheffield, Mappin Street, Sheffield S1 3JD (United Kingdom)

    2016-03-28

    Electrical characterization of two GaAs p{sup +}-i-n{sup +} mesa X-ray photodiodes over the temperature range 0 °C to 120 °C together with characterization of one of the diodes as an X-ray detector over the temperature range 0 °C to 60 °C is reported as part of the development of photon counting X-ray spectroscopic systems for harsh environments. The randomly selected diodes were fully etched and unpassivated. The diodes were 200 μm in diameter and had 7 μm thick i layers. The leakage current density was found to increase from (3 ± 1) nA/cm{sup −2} at 0 °C to (24.36 ± 0.05) μA/cm{sup −2} at 120 °C for D1 and from a current density smaller than the uncertainty (0.2 ± 1.2) nA/cm{sup −2} at 0 °C to (9.39 ± 0.02) μA/cm{sup −2} at 120 °C for D2 at the maximum investigated reverse bias (15 V). The best energy resolution (FWHM at 5.9 keV) was achieved at 5 V reverse bias, at each temperature; 730 eV at 0 °C, 750 eV at 20 °C, 770 eV at 40 °C, and 840 eV at 60 °C. It was found that the parallel white noise was the main source of the photopeak broadening only when the detector operated at 60 °C, at 5 V, 10 V, and 15 V reverse bias and at long shaping times (>5 μs), whereas the sum of the dielectric noise and charge trapping noise was the dominant source of noise for all the other spectra.

  19. Silicon P.I.N. Junctions used for studies of radiation damage

    International Nuclear Information System (INIS)

    Lanore, J.

    1964-06-01

    Irradiation of silicon P.I.N. junction has been studied primarily for the purpose of developing a radiation damage dosimeter, but also for the purpose of investigating silicon itself. It is known that the rate of recombination of electrons and holes is a linear function of defects introduced by neutron irradiation. Two methods have been used to measure that rate of recombination: forward characteristic measurements, recovery time measurements. In order to explain how these two parameters depend on recombination rate we have given a theory of the P.I.N. junction. We have also given an idea of the carrier lifetime dependence versus temperature. Annealing effects in the range of 70 to 700 K have also been studied, we found five annealing stages with corresponding activation energies. As an application for these studies, we developed a radiation damage dosimeter with which we made several experiments in facilities such as Naiade or Marias. (author) [fr

  20. Investigations on commercial semiconductor diodes as possible high dose rate radiation detectors

    International Nuclear Information System (INIS)

    Breitenhuber, L.; Kindl, P.; Obenaus, B.

    1992-12-01

    Investigations concerning the relevant properties of commercial semiconductor diodes such as their sensitivity and its dependence on accumulated dose, dose rate, energy, temperature and direction have been made in order to obtain their usefullness as radiation detectors. (authors)

  1. Operation of a high-purity silicon diode alpha particle detector at 1.4 K

    International Nuclear Information System (INIS)

    Martoff, C.J.; Kaczanowicz, E.; Neuhauser, B.J.; Lopez, E.; Zhang, Y.; Ziemba, F.P.

    1991-01-01

    Detection of alpha particles at temperatures as low as 1.4 K was demonstrated using a specially fabricated Si diode. The diode was 475 mm 2 by 0.280 mm thick, fabricated from high-purity silicon with degenerately doped contacts. This is an important step toward development of dual-mode (ionization plus phonon) silicon detectors for low energy radiation. (orig.)

  2. Spectral perturbations from silicon diode detector encapsulation and shielding in photon fields.

    Science.gov (United States)

    Eklund, Karin; Ahnesjö, Anders

    2010-11-01

    Silicon diodes are widely used as detectors for relative dose measurements in radiotherapy. The common manufacturing practice is to encapsulate the diodes in plastic for protection and to facilitate mounting in scanning devices. Diodes intended for use in photon fields commonly also have a shield of a high atomic number material (usually tungsten) integrated into the encapsulation to selectively absorb low-energy photons to which silicon diodes would otherwise over-response. However, new response models based on cavity theories and spectra calculations have been proposed for direct correction of the readout from unshielded (e.g., "electron") diodes used in photon fields. This raises the question whether it is correct to assume that the spectrum in a water phantom at the location of the detector cavity is not perturbed by the detector encapsulation materials. The aim of this work is to investigate the spectral effects of typical encapsulations, including shielding, used for clinical diodes. The effects of detector encapsulation of an unshielded and a shielded commercial diode on the spectra at the detector cavity location are studied through Monte Carlo simulations with PENELOPE-2005. Variance reduction based on correlated sampling is applied to reduce the CPU time needed for the simulations. The use of correlated sampling is found to be efficient and to not introduce any significant bias to the results. Compared to reference spectra calculated in water, the encapsulation for an unshielded diode is demonstrated to not perturb the spectrum, while a tungsten shielded diode caused not only the desired decrease in low-energy scattered photons but also a large increase of the primary electron fluence. Measurements with a shielded diode in a 6 MV photon beam proved that the shielding does not completely remove the field-size dependence of the detector response caused by the over-response from low-energy photons. Response factors of a properly corrected unshielded diode

  3. Evaluation Of Silicon Diodes As IN-SITU Cryogenic Field Emission Detectors For SRF Cavity Development

    International Nuclear Information System (INIS)

    Palczewski, Ari; Geng, Rongli

    2012-01-01

    We performed in-situ cryogenic testing of four silicon diodes as possible candidates for field emission (FE) monitors of superconducting radio frequency (SRF) cavities during qualification testing and in accelerator cryo-modules. We evaluated diodes from 2 companies - from Hamamatsu corporation model S1223-01; and from OSI Optoelectronics models OSD35-LR-A, XUV-50C, and FIL-UV20. The measurements were done by placing the diodes in superfluid liquid helium near the top of a field emitting 9-cell cavity during its vertical test. For each diode, we will discuss their viability as a 2K cryogenic detector for FE mapping of SRF cavities and the directionality of S1223-01 in such environments. We will also present calibration curves between the diodes and JLab's standard radiation detector placed above the Dewar's top plate.

  4. Pin Diode Detector For Radiation Field Monitoring In A Current Mode

    International Nuclear Information System (INIS)

    Beck, A.; Wengrowicz, U.; Kadmon, Y.; Tirosh, D.; Osovizky, A.; Vulasky, E.; Tal, N.

    1999-01-01

    Thus paper presents calculations and tests made for a detector based on a bare Pin diode and a Pin diode coupled to a plastic scintillator. These configurations have a variety of applications in radiation field monitoring. For example, the Positron Emission Tomography (PET) technology which becomes an established diagnostic imaging modality. Flour-18 is one of the major isotopes being used by PET imaging. The PET method utilizes short half life β + radioisotopes which, by annihilation, produce a pair of high energy photons (511 keV). Fluoro-deoxyglucose producers are required to meet federal regulations and licensing requirements. Some of the regulations are related to the production in chemistry modules regarding measuring the Start Of Synthesis (SOS) activity and verifying the process repeatability. Locating a radiation detector based on Pin diode inside the chemistry modules is suitable for this purpose. The dimensions of a Pin diode based detector can be small, with expected linearity over several scale decades

  5. A Prototype RICH Detector Using Multi-Anode Photo Multiplier Tubes and Hybrid Photo-Diodes

    CERN Document Server

    Albrecht, E; Bibby, J H; Brook, N H; Doucas, G; Duane, A; Easo, S; Eklund, L; French, M; Gibson, V; Gys, Thierry; Halley, A W; Harnew, N; John, M; Piedigrossi, D; Rademacker, J; Simmons, B; Smale, N J; Teixeira-Dias, P; Toudup, L W; Websdale, David M; Wilkinson, G R; Wotton, S A

    2001-01-01

    The performance of a prototype Ring Imaging Cherenkov Detector is studied using a charged particle beam. The detector performance, using CF4 and air as radiators, is described. Cherenkov angle precision and photoelectron yield using hybrid photo-diodes and multi-anode PMTs agree with simulations and are assessed in terms of the requirements of the LHCb experiment.

  6. Defects influence on short circuit current density in p-i-n silicon solar cell

    International Nuclear Information System (INIS)

    Wagah F Mohamad; Alhan M Mustafa

    2006-01-01

    The admittance analysis method has been used to calculate the collection efficiency and the short circuit current density in a-Si:H p-i-n solar cell, as a function of the thickness of i-layer. Its is evident that the results of the short circuit current can be used to determine the optimal thickness of the i-layer of a cell, and it will be more accurate in comparison with the previous studies using a constant generation rate or an empirical exponential function for the generation of charge carriers throughout the i-layer

  7. Density of states measurements in a p-i-n solar cell

    Energy Technology Data Exchange (ETDEWEB)

    Crandall, R.S.; Wang, Q. [National Renewable Energy Lab., Golden, CO (United States)

    1996-05-01

    The authors describe results of density of states (DOS) profiling in p-i-n solar-cell devices using drive-level capacitance (DLC) techniques. Near the p-i interface the defect density is high, decreasing rapidly into the interior, reaching low values in the central region of the cell, and rising rapidly again at the n-i interface. They show that the states in the central region are neutral dangling-bond defects, whereas those near the interfaces with the doped layers are charged dangling bonds.

  8. Simulation based comparative analysis of photoresponse in front- and back-illuminated GaN P-I-N ultraviolet photodetectors

    Science.gov (United States)

    Wang, Jun; Guo, Jin; Xie, Feng; Wang, Guosheng; Wu, Haoran; Song, Man; Yi, Yuanyuan

    2016-10-01

    This paper presents the comparative analysis of influence of doping level and doping profile of the active region on zero bias photoresponse characteristics of GaN-based p-i-n ultraviolet (UV) photodetectors operating at front- and back-illuminated. A two dimensional physically-based computer simulation of GaN-based p-i-n UV photodetectors is presented. We implemented GaN material properties and physical models taken from the literature. It is shown that absorption layer doping profile has notable impacts on the photoresponse of the device. Especially, the effect of doping concentration and distribution of the absorption layer on photoresponse is discussed in detail. In the case of front illumination, comparative to uniform n-type doping, the device with n-type Gaussian doping profiles at absorption layer has higher responsivity. Comparative to front illumination, back illuminated detector with p-type doping profiles at absorption layer has higher maximum photoresponse, while the Gaussian doping profiles have a weaker ability to enhance the device responsivity. It is demonstrated that electric field distribution, mobility degradation, and recombinations are jointly responsible for the variance of photoresponse. Our work enriches the understanding and utilization of GaN based p-i-n UV photodetectors.

  9. Development of Schottky diode detectors at Research Institute of Electrical Communication, Tohoku University

    International Nuclear Information System (INIS)

    Mizuno, K.; Ono, S.; Suzuki, T.; Daiku, Y.

    1982-01-01

    Schottky diode detectors are widely used as fast, sensitive submillimeter detectors in plasma physics, radio astronomy, frequency standards and so on. In this paper, the research on submillimeter Schottky diodes at Tohoku University is described. A brief description is given on the theoretical examination of diode parameters for video detection in design and on the fabrication of n/n + GaAs Schottky diode chips. Antennas for Schottky barrier diodes are discussed. Three types of antenna structures have been proposed, and used for whisker-contacted Schottky diodes so far. These are compared with each other for their frequency response and gain. The bicone type antenna is promising because of its larger frequency response, but the optimum design for this type of antenna has not yet sufficiently been obtained. As the application of Schottky barrier diodes, the intensity modulation of submillimeter laser and a quasi-optically coupled harmonic mixer have been studied. The modulation degree of about 4 % for HCN laser output has been so far obtained at the maximum modulation frequency of 2 GHz. Since 1976, a quasi-optically coupled harmonic mixer has been used with a Schottky diode in harmonic mixing between microwaves, millimeter waves, and submillimeter waves. (Wakatsuki, Y.)

  10. Operation of a high-purity silicon diode alpha particle detector at 1. 4 K

    Energy Technology Data Exchange (ETDEWEB)

    Martoff, C.J.; Kaczanowicz, E. (Temple Univ., Philadelphia, PA (USA)); Neuhauser, B.J.; Lopez, E.; Zhang, Y. (San Francisco State Univ., CA (USA)); Ziemba, F.P. (Quantrad Corp. (USA))

    1991-03-01

    Detection of alpha particles at temperatures as low as 1.4 K was demonstrated using a specially fabricated Si diode. The diode was 475 mm{sup 2} by 0.280 mm thick, fabricated from high-purity silicon with degenerately doped contacts. This is an important step toward development of dual-mode (ionization plus phonon) silicon detectors for low energy radiation. (orig.).

  11. Performance evaluation of a lossy transmission lines based diode detector at cryogenic temperature.

    Science.gov (United States)

    Villa, E; Aja, B; de la Fuente, L; Artal, E

    2016-01-01

    This work is focused on the design, fabrication, and performance analysis of a square-law Schottky diode detector based on lossy transmission lines working under cryogenic temperature (15 K). The design analysis of a microwave detector, based on a planar gallium-arsenide low effective Schottky barrier height diode, is reported, which is aimed for achieving large input return loss as well as flat sensitivity versus frequency. The designed circuit demonstrates good sensitivity, as well as a good return loss in a wide bandwidth at Ka-band, at both room (300 K) and cryogenic (15 K) temperatures. A good sensitivity of 1000 mV/mW and input return loss better than 12 dB have been achieved when it works as a zero-bias Schottky diode detector at room temperature, increasing the sensitivity up to a minimum of 2200 mV/mW, with the need of a DC bias current, at cryogenic temperature.

  12. Detection mechanisms in silicon diodes used as α-particle and thermal neutron detectors

    International Nuclear Information System (INIS)

    Cerofolini, G.F.; Ferla, G.; Foglio Para, A.

    1981-01-01

    Some common silicon devices (diodes, RAMs etc.) can be used as α and thermal neutron detectors. An α resolution of approx. equal to 3% can be obtained utilizing p + /n or n + /p diodes with no external bias. Thermal neutrons are detected by means of the reaction 10 B(n,α) 7 Li on the 10 B present in the devices. Neutron efficiency has been substantially improved by implantation of 10 B ions in the p + region of the diodes. Experimental results allow us to clarify the carrier collection mechanisms throughout the device. Some current opinions in the field are contradicted. (orig.)

  13. Room Temperature Direct Band Gap Emission from Ge p-i-n Heterojunction Photodiodes

    Directory of Open Access Journals (Sweden)

    E. Kasper

    2012-01-01

    Full Text Available Room temperature direct band gap emission is observed for Si-substrate-based Ge p-i-n heterojunction photodiode structures operated under forward bias. Comparisons of electroluminescence with photoluminescence spectra allow separating emission from intrinsic Ge (0.8 eV and highly doped Ge (0.73 eV. Electroluminescence stems from carrier injection into the intrinsic layer, whereas photoluminescence originates from the highly n-doped top layer because the exciting visible laser wavelength is strongly absorbed in Ge. High doping levels led to an apparent band gap narrowing from carrier-impurity interaction. The emission shifts to higher wavelengths with increasing current level which is explained by device heating. The heterostructure layer sequence and the light emitting device are similar to earlier presented photodetectors. This is an important aspect for monolithic integration of silicon microelectronics and silicon photonics.

  14. The All Boron Carbide Diode Neutron Detector: Experiment and Modeling Approach

    International Nuclear Information System (INIS)

    Sabirianov, Ildar F.; Brand, Jennifer I.; Fairchild, Robert W.

    2008-01-01

    Boron carbide diode detectors, fabricated from two different polytypes of semiconducting boron carbide, will detect neutrons in reasonable agreement with theoretical expectations. The performance of the all boron carbide neutron detector differs, as expected, from devices where a boron rich neutron capture layer is distinct from the diode charge collection region (i.e. a conversion layer solid state detector). Diodes were fabricated from natural abundance boron (20% 10 B and 80% 11 B.) directly on the metal substrates and metal contacts applied to the films as grown. The total boron depth was on the order of 2 microns. This is clearly not a conversion-layer configuration. The diodes were exposed to thermal neutrons generated from a paraffin moderated plutonium-beryllium source in moderated and un-moderated, as well as shielded and unshielded experimental configurations, where the expected energy peaks at at 2.31 MeV and 2.8 MeV were clearly observed, albeit with some incomplete charge collection typical of thinner diode structures. The results are compared with other boron based thin film detectors and literature models. (authors)

  15. Analysis of diodes used as precision power detectors above the square law region

    DEFF Research Database (Denmark)

    Guldbrandsen, Tom

    1990-01-01

    The deviation from square law found in diode power detectors at moderate power levels has been modeled for a general system consisting of a number of diode detectors connected to a common arbitrary linear passive network, containing an approximately sinusoidal source. This situation covers the case...... if an extra-set of measurements is made in situ. For precision measurements the maximum power level can be increased by about 10 dB. The dynamic range can thus be increased sufficiently to enable fast measurements to be made with an accuracy of 10-3 dB...

  16. Suppression of irradiation effects in gold-doped silicon detectors

    International Nuclear Information System (INIS)

    McPherson, M.; Sloan, T.; Jones, B.K.

    1997-01-01

    Two sets of silicon detectors were irradiated with 1 MeV neutrons to different fluences and then characterized. The first batch were ordinary p-i-n photodiodes fabricated from high-resistivity (400 Ω cm) silicon, while the second batch were gold-doped powder diodes fabricated from silicon material initially of low resistivity (20 Ω cm). The increase in reverse leakage current after irradiation was found to be more in the former case than in the latter. The fluence dependence of the capacitance was much more pronounced in the p-i-n diodes than in the gold-doped diodes. Furthermore, photo current generation by optical means was less in the gold doped devices. All these results suggest that gold doping in silicon somewhat suppresses the effects of neutron irradiation. (author)

  17. The Light-Emitting Diode as a Light Detector

    Science.gov (United States)

    Baird, William H.; Hack, W. Nathan; Tran, Kiet; Vira, Zeeshan; Pickett, Matthew

    2011-01-01

    A light-emitting diode (LED) and operational amplifier can be used as an affordable method to provide a digital output indicating detection of an intense light source such as a laser beam or high-output LED. When coupled with a microcontroller, the combination can be used as a multiple photogate and timer for under $50. A similar circuit is used…

  18. Applications of Liquid Chromatography with Fluorescence Detector Diodes and the Analysis of Environmental Pollutants

    International Nuclear Information System (INIS)

    Garcia, S.; Perez, R. M.

    2012-01-01

    It presents a review on the determination of major types of organic pollutants in environmental samples by HPLC with diode array or fluorescence molecular detectors. Main objective has been to make a compilation of the analytical potential of the technique based on literature and our laboratory studies on the main aspects of analytical methodology used in the determination of these compounds. (Author) 53 refs.

  19. Quantum dot resonant tunneling diode single photon detector with aluminum oxide aperture defined tunneling area

    DEFF Research Database (Denmark)

    Li, H.W.; Kardynal, Beata; Ellis, D.J.P.

    2008-01-01

    Quantum dot resonant tunneling diode single photon detector with independently defined absorption and sensing areas is demonstrated. The device, in which the tunneling is constricted to an aperture in an insulating layer in the emitter, shows electrical characteristics typical of high quality res...

  20. BPM Electronics based on Compensated Diode Detectors – Results from development Systems

    CERN Document Server

    Gasior, M; Steinhagen, RJ

    2012-01-01

    High resolution beam position monitor (BPM) electronics based on diode peak detectors is being developed for processing signals from button BPMs embedded into future LHC collimators. Its prototypes were measured in a laboratory as well as with beam signals from the collimator BPM installed on the SPS and with LHC BPMs. Results from these measurements are presented and discussed.

  1. GaAs nanowire array solar cells with axial p-i-n junctions.

    Science.gov (United States)

    Yao, Maoqing; Huang, Ningfeng; Cong, Sen; Chi, Chun-Yung; Seyedi, M Ashkan; Lin, Yen-Ting; Cao, Yu; Povinelli, Michelle L; Dapkus, P Daniel; Zhou, Chongwu

    2014-06-11

    Because of unique structural, optical, and electrical properties, solar cells based on semiconductor nanowires are a rapidly evolving scientific enterprise. Various approaches employing III-V nanowires have emerged, among which GaAs, especially, is under intense research and development. Most reported GaAs nanowire solar cells form p-n junctions in the radial direction; however, nanowires using axial junction may enable the attainment of high open circuit voltage (Voc) and integration into multijunction solar cells. Here, we report GaAs nanowire solar cells with axial p-i-n junctions that achieve 7.58% efficiency. Simulations show that axial junctions are more tolerant to doping variation than radial junctions and lead to higher Voc under certain conditions. We further study the effect of wire diameter and junction depth using electrical characterization and cathodoluminescence. The results show that large diameter and shallow junctions are essential for a high extraction efficiency. Our approach opens up great opportunity for future low-cost, high-efficiency photovoltaics.

  2. Photon detector configured to employ the Gunn effect and method of use

    Science.gov (United States)

    Cich, Michael J

    2015-03-17

    Embodiments disclosed herein relate to photon detectors configured to employ the Gunn effect for detecting high-energy photons (e.g., x-rays and gamma rays) and methods of use. In an embodiment, a photon detector for detecting high-energy photons is disclosed. The photon detector includes a p-i-n semiconductor diode having a p-type semiconductor region, an n-type semiconductor region, and a compensated i-region disposed between the p-type semiconductor region and the n-type semiconductor region. The compensated i-region and has a width of about 100 .mu.m to about 400 .mu.m and is configured to exhibit the Gunn effect when the p-i-n semiconductor diode is forward biased a sufficient amount. The compensated i-region is doped to include a free carrier concentration of less than about 10.sup.10 cm.sup.-3.

  3. Extraction of depth-dependent perturbation factors for silicon diodes using a plastic scintillation detector.

    Science.gov (United States)

    Lacroix, Frederic; Guillot, Mathieu; McEwen, Malcolm; Gingras, Luc; Beaulieu, Luc

    2011-10-01

    This work presents the experimental extraction of the perturbation factor in megavoltage electron beams for three models of silicon diodes (IBA Dosimetry, EFD and SFD, and the PTW 60012 unshielded) using a plastic scintillation detector (PSD). The authors used a single scanning PSD mounted on a high-precision scanning tank to measure depth-dose curves in 6-, 12-, and 18-MeV clinical electron beams. They also measured depth-dose curves using the IBA Dosimetry, EFD and SFD, and the PTW 60012 unshielded diodes. The authors used the depth-dose curves measured with the PSD as a perturbation-free reference to extract the perturbation factors of the diodes. The authors found that the perturbation factors for the diodes increased substantially with depth, especially for low-energy electron beams. The experimental results show the same trend as published Monte Carlo simulation results for the EFD diode; however, the perturbations measured experimentally were greater. They found that using an effective point of measurement (EPOM) placed slightly away from the source reduced the variation of perturbation factors with depth and that the optimal EPOM appears to be energy dependent. The manufacturer recommended EPOM appears to be incorrect at low electron energy (6 MeV). In addition, the perturbation factors for diodes may be greater than predicted by Monte Carlo simulations.

  4. Extraction of depth-dependent perturbation factors for silicon diodes using a plastic scintillation detector

    International Nuclear Information System (INIS)

    Lacroix, Frederic; Guillot, Mathieu; McEwen, Malcolm; Gingras, Luc; Beaulieu, Luc

    2011-01-01

    Purpose: This work presents the experimental extraction of the perturbation factor in megavoltage electron beams for three models of silicon diodes (IBA Dosimetry, EFD and SFD, and the PTW 60012 unshielded) using a plastic scintillation detector (PSD). Methods: The authors used a single scanning PSD mounted on a high-precision scanning tank to measure depth-dose curves in 6-, 12-, and 18-MeV clinical electron beams. They also measured depth-dose curves using the IBA Dosimetry, EFD and SFD, and the PTW 60012 unshielded diodes. The authors used the depth-dose curves measured with the PSD as a perturbation-free reference to extract the perturbation factors of the diodes. Results: The authors found that the perturbation factors for the diodes increased substantially with depth, especially for low-energy electron beams. The experimental results show the same trend as published Monte Carlo simulation results for the EFD diode; however, the perturbations measured experimentally were greater. They found that using an effective point of measurement (EPOM) placed slightly away from the source reduced the variation of perturbation factors with depth and that the optimal EPOM appears to be energy dependent. Conclusions: The manufacturer recommended EPOM appears to be incorrect at low electron energy (6 MeV). In addition, the perturbation factors for diodes may be greater than predicted by Monte Carlo simulations.

  5. Silicon diodes as an alternative to diamond detectors for depth dose curves and profile measurements of photon and electron radiation.

    Science.gov (United States)

    Scherf, Christian; Peter, Christiane; Moog, Jussi; Licher, Jörg; Kara, Eugen; Zink, Klemens; Rödel, Claus; Ramm, Ulla

    2009-08-01

    Depth dose curves and lateral dose profiles should correspond to relative dose to water in any measured point, what can be more or less satisfied with different detectors. Diamond as detector material has similar dosimetric properties like water. Silicon diodes and ionization chambers are also commonly used to acquire dose profiles. The authors compared dose profiles measured in an MP3 water phantom with a diamond detector 60003, unshielded and shielded silicon diodes 60008 and 60012 and a 0.125-cm(3) thimble chamber 233642 (PTW, Freiburg, Germany) for 6- and 25-MV photons. Electron beams of 6, 12 and 18 MeV were investigated with the diamond detector, the unshielded diode and a Markus chamber 23343. The unshielded diode revealed relative dose differences at the water surface below +10% for 6-MV and +4% for 25-MV photons compared to the diamond data. These values decreased to less than 1% within the first millimeters of water depth. The shielded diode was only required to obtain correct data of the fall-off zones for photon beams larger than 10 x 10 cm(2) because of important contributions of low-energy scattered photons. For electron radiation the largest relative dose difference of -2% was observed with the unshielded silicon diode for 6 MeV within the build-up zone. Spatial resolutions were always best with the small voluminous silicon diodes. Relative dose profiles obtained with the two silicon diodes have the same degree of accuracy as with the diamond detector.

  6. Design and Characterization of p-i-n Devices for Betavoltaic Microbatteries on Gallium Nitride

    Science.gov (United States)

    Khan, Muhammad Raziuddin A.

    Betavoltaic microbatteries convert nuclear energy released as beta particles directly into electrical energy. These batteries are well suited for electrical applications such as micro-electro-mechanical systems (MEMS), implantable medical devices and sensors. Such devices are often located in hard to access places where long life, micro-size and lightweight are required. The working principle of a betavoltaic device is similar to a photovoltaic device; they differ only in that the electron hole pairs (EHPs) are generated in the device by electrons instead of photons. In this study, the performance of a betavoltaic device fabricated from gallium nitride (GaN) is investigated for beta particle energies equivalent to Tritium (3H) and Nickel-63 (N63) beta sources. GaN is an attractive choice for fabricating betavoltaic devices due to its wide band gap and radiation resistance. Another advantage GaN has is that it can be alloyed with aluminum (Al) to further increase the bandgap, resulting in a higher output power and increased efficiency. Betavoltaic devices were fabricated on p-i-n GaN structures grown by metalorganic chemical vapor deposition (MOCVD). The devices were characterized using current - voltage (IV) measurements without illumination (light or beta), using a laser driven light source, and under an electron beam. Dark IV measurements showed a turn on-voltage of ~ 3.4 V, specific-on-resistance of 15.1 m O-cm2, and a leakage current of 0.5 mA at -- 10 V. A clear photo-response was observed when IV curves were measured for these devices under a light source at a wavelength of 310 nm (4.0 eV). These devices were tested under an electron beam in order to evaluate their behavior as betavoltaic microbatteries without using radioactive materials. Output power of 70 nW and 640 nW with overall efficiencies of 1.2% and 4.0% were determined at the average energy emission of 3H (5.6 keV) and 63N (17 keV) respectively.

  7. Energy dependence of commercially available diode detectors for in-vivo dosimetry

    International Nuclear Information System (INIS)

    Saini, Amarjit S.; Zhu, Timothy C.

    2007-01-01

    The energy dependence of commercially available diode detectors was measured for nominal accelerating potential ranging between Co-60 and 17 MV. The measurements were performed in a liquid water phantom at 5 cm depth for 10x10 cm 2 collimator setting and source-to-detector distance of 100 cm. The response (nC/Gy) was normalized to Co-60 beam after corrections for the dose rate and temperature dependences for each diode. The energy dependence, calculated by taking the percent difference between the maximum and minimum sensitivity normalized to Co-60 beam, varied by 39% for the n-type Isorad Red, 26% for the n-type Isorad Electron, 19% for the QED Red (p-type), 15% for the QED Electron (p-type), 11% for the QED Blue (p-type), and 6% for the EDP10 diode for nominal accelerating potential between Co-60 and 17 MV. It varied by 34% for the Isorad-3 Gold 1 and 2, 35% for the Veridose Green, 15% for the Veridose Yellow, 9% for the Veridose Electron, 21% for the n-type QED Gold, 24% for the n-type QED Red, 3% for the EDP2 3G , 2% for the PFD (photon field detector), 7% for the EDP10 3G , and 16% for the EDP20 3G for nominal accelerating potential between Co-60 and 15 MV. The magnitude of the energy dependence is verified by Monte Carlo simulation. We concluded that the energy dependence does not depend on whether the diode is n- or p-type but rather depends mainly on the material around the die such as the buildup and the geometry of the buildup material. As a result, the value of the energy dependence can vary for each individual diode depending on the actual geometry and should be used with caution

  8. Persistent photoeffects in p-i-n GaAs/AlGaAs heterostructures with double quantum wells

    DEFF Research Database (Denmark)

    Dorozhkin, S.I.; Timofeev, V.B.; Hvam, Jørn Märcher

    2001-01-01

    Abrupt changes in the capacitance between the p and n regions were observed in a planar p-i-n GaAs/AlGaAs heterostructure with two tunneling-coupled quantum wells exposed to laser irradiation (lambda = 633 nm). These changes can be caused by variations in both temperature (in the vicinity of T...

  9. Testing digital recursive filtering method for radiation measurement channel using pin diode detector

    International Nuclear Information System (INIS)

    Talpalariu, C. M.; Talpalariu, J.; Popescu, O.; Mocanasu, M.; Lita, I.; Visan, D. A.

    2016-01-01

    In this work we have studied a software filtering method implemented in a pulse counting computerized measuring channel using PIN diode radiation detector. In case our interest was focalized for low rate decay radiation measurement accuracies improvement and response time optimization. During works for digital mathematical algorithm development, we used a hardware radiation measurement channel configuration based on PIN diode BPW34 detector, preamplifier, filter and programmable counter, computer connected. We report measurement results using two digital recursive methods in statically and dynamically field evolution. Software for graphical input/output real time diagram representation was designed and implemented, facilitating performances evaluation between the response of fixed configuration software recursive filter and dynamically adaptive configuration recursive filter. (authors)

  10. Natural gas pipeline leak detector based on NIR diode laser absorption spectroscopy.

    Science.gov (United States)

    Gao, Xiaoming; Fan, Hong; Huang, Teng; Wang, Xia; Bao, Jian; Li, Xiaoyun; Huang, Wei; Zhang, Weijun

    2006-09-01

    The paper reports on the development of an integrated natural gas pipeline leak detector based on diode laser absorption spectroscopy. The detector transmits a 1.653 microm DFB diode laser with 10 mW and detects a fraction of the backscatter reflected from the topographic targets. To eliminate the effect of topographic scatter targets, a ratio detection technique was used. Wavelength modulation and harmonic detection were used to improve the detection sensitivity. The experimental detection limit is 50 ppmm, remote detection for a distance up to 20 m away topographic scatter target is demonstrated. Using a known simulative leak pipe, minimum detectable pipe leak flux is less than 10 ml/min.

  11. Measurement and deconvolution of detector response time for short HPM pulses: Part 1, Microwave diodes

    International Nuclear Information System (INIS)

    Bolton, P.R.

    1987-06-01

    A technique is described for measuring and deconvolving response times of microwave diode detection systems in order to generate corrected input signals typical of an infinite detection rate. The method has been applied to cases of 2.86 GHz ultra-short HPM pulse detection where pulse rise time is comparable to that of the detector; whereas, the duration of a few nanoseconds is significantly longer. Results are specified in terms of the enhancement of equivalent deconvolved input voltages for given observed voltages. The convolution integral imposes the constraint of linear detector response to input power levels. This is physically equivalent to the conservation of integrated pulse energy in the deconvolution process. The applicable dynamic range of a microwave diode is therefore limited to a smaller signal region as determined by its calibration

  12. Analytical Issues on the Determination of Carotenoids in Microalgae by Liquid Chromatography with Diode Array Detector

    International Nuclear Information System (INIS)

    Garcia, S.; Perez, R. M.

    2012-01-01

    A preliminary study of literature review on the determination of carotenoids in microalgae samples by HPLC with diode array detector is presented. Main objective has been focused to compile data from literature and based on the main aspects of the analytical methodology used in the determination of these compounds. The work is structured as follows and affecting major analytical difficulties: Procurement and commercial availability of standard solutions. Stage of sample treatment. Chromatographic analysis. (Author) 19 refs.

  13. Comparative study of afterpulsing behavior and models in single photon counting avalanche photo diode detectors.

    Science.gov (United States)

    Ziarkash, Abdul Waris; Joshi, Siddarth Koduru; Stipčević, Mario; Ursin, Rupert

    2018-03-22

    Single-photon avalanche diode (SPAD) detectors, have a great importance in fields like quantum key distribution, laser ranging, florescence microscopy, etc. Afterpulsing is a non-ideal behavior of SPADs that adversely affects any application that measures the number or timing of detection events. Several studies based on a few individual detectors, derived distinct mathematical models from semiconductor physics perspectives. With a consistent testing procedure and statistically large data sets, we show that different individual detectors - even if identical in type, make, brand, etc. - behave according to fundamentally different mathematical models. Thus, every detector must be characterized individually and it is wrong to draw universal conclusions about the physical meaning behind these models. We also report the presence of high-order afterpulses that are not accounted for in any of the standard models.

  14. VUV and ultrasoft X-ray diode detectors for tokamak plasmas

    International Nuclear Information System (INIS)

    Lee, P.; Snider, R.T.; Gernhardt, J.; Armontrout, C.J.

    1987-11-01

    Ultrasoft X-ray diode (USXRD) arrays have been used on D-IIID and ASDEX to study plasma edge radiation, in the photon energy range from 10 eV to 10 keV. The detectors are extremely useful and versatile due to their simplicity and compactness. Furthermore, absolute quantum efficiencies (QE) of many photocathodes such as vitreous C, Al, Cu CuI, CsI and Au have been measured in recent years. With filter technique, broadband resolution, E/ΔE ≅ 1, is possible. QE comparison of USXRD with semiconductor XRD is also presented to better understand the regions of applicability for each detector. (orig.)

  15. A car-borne highly sensitive near-IR diode-laser methane detector

    International Nuclear Information System (INIS)

    Berezin, A G; Ershov, Oleg V; Shapovalov, Yu P

    2003-01-01

    A highly sensitive automated car-borne detector for measuring methane concentration in real time is designed, developed and tested under laboratory and field conditions. Measurements were made with the help of an uncooled tunable near-IR 1.65-μm laser diode. The detector consists of a multipass optical cell with a 45-m long optical path and a base length of 0.5 m. The car-borne detector is intended for monitoring the methane concentration in air from the moving car to reveal the leakage of domestic gas. The sensitivity limit (standard deviation) under field conditions is 1 ppm (20 ppb under laboratory conditions) for a measuring time of 0.4 s. The measuring technique based on the detection of a single methane line ensured a high selectivity of methane detector relative to other gases. The methane detector can be easily modified for measuring other simple-molecule gases (e.g., CO, CO 2 , HF, NO 2 , H 2 O) by replacing the diode laser and varying the parameters of the control program. (special issue devoted to the memory of academician a m prokhorov)

  16. Dosimetry of Gamma Knife and linac-based radiosurgery using radiochromic and diode detectors

    International Nuclear Information System (INIS)

    Somigliana, A.; Borelli, S.; Zonca, G.; Pignoli, E.; Loi, G.; Marchesini, R.; Cattaneo, G.M.; Fiorino, C.; Vecchio, A. del; Calandrino, R.

    1999-01-01

    In stereotactic radiosurgery the choice of appropriate detectors, whether for absolute or relative dosimetry, is very important due to the steep dose gradient and the incomplete lateral electronic equilibrium. For both linac-based and Leksell Gamma Knife radiosurgery units, we tested the use of calibrated radiochromic film to measure absolute doses and relative dose distributions. In addition a small diode was used to estimate the relative output factors. The data obtained using radiochromic and diode detectors were compared with measurements performed with other conventional methods of dosimetry, with calculated values by treatment planning systems and with data prestored in the treatment planning system supplied by the Leksell Gamma Knife (LGK) vendor. Two stereotactic radiosurgery techniques were considered: Leksell Gamma Knife (using γ-rays from 60 Co) and linac-based radiosurgery (LR) (6 MV x-rays). Different detectors were used for both relative and absolute dosimetry: relative output factors (OFs) were estimated by using radiochromic and radiographic films and a small diode; relative dose distributions in the axial and coronal planes of a spherical polystyrene phantom were measured using radiochromic film and calculated by two different treatment planning systems (TPSs). The absolute dose at the sphere centre was measured by radiochromic film and a small ionization chamber. An accurate selection of radiochromic film was made: samples of unexposed film showing a percentage standard deviation of less than 3% were used for relative dose profiles, and for absolute dose and OF evaluations this value was reduced to 1.5%. Moreover a proper calibration curve was made for each set of measurements. With regard to absolute doses, the results obtained with the ionization chamber are in good correlation with radiochromic film-generated data, for both LGK and LR, showing a dose difference of less than 1%. The output factor evaluations, performed using different methods

  17. An ultra-thin Schottky diode as a transmission particle detector for biological microbeams

    Science.gov (United States)

    Harken, Andrew; Randers-Pehrson, Gerhard; Attinger, Daniel; Brenner, David J.

    2013-01-01

    We fabricated ultrathin metal-semiconductor Schottky diodes for use as transmission particle detectors in the biological microbeam at Columbia University’s Radiological Research Accelerator Facility (RARAF). The RARAF microbeam can deliver a precise dose of ionizing radiation in cell nuclei with sub-micron precision. To ensure an accurate delivery of charged particles, the facility currently uses a commercial charged-particle detector placed after the sample. We present here a transmission detector that will be placed between the particle accelerator and the biological specimen, allowing the irradiation of samples that would otherwise block radiation from reaching a detector behind the sample. Four detectors were fabricated with co-planar gold and aluminum electrodes thermally evaporated onto etched n-type crystalline silicon substrates, with device thicknesses ranging from 8.5 μm – 13.5 μm. We show coincident detections and pulse-height distributions of charged particles in both the transmission detector and the commercial detector above it. Detections are demonstrated at a range of operating conditions, including incoming particle type, count rate, and beam location on the detectors. The 13.5 μm detector is shown to work best to detect 2.7 MeV protons (H+), and the 8.5 μm detector is shown to work best to detect 5.4 MeV alpha particles (4He++). The development of a transmission detector enables a range of new experiments to take place at RARAF on radiation-stopping samples such as thick tissues, targets that need immersion microscopy, and integrated microfluidic devices for handling larger quantities of cells and small organisms. PMID:24058378

  18. An ultra-thin Schottky diode as a transmission particle detector for biological microbeams

    International Nuclear Information System (INIS)

    Grad, M; Harken, A; Randers-Pehrson, G; Brenner, D J; Attinger, D

    2012-01-01

    We fabricated ultrathin metal-semiconductor Schottky diodes for use as transmission particle detectors in the biological microbeam at Columbia University's Radiological Research Accelerator Facility (RARAF). The RARAF microbeam can deliver a precise dose of ionizing radiation in cell nuclei with sub-micron precision. To ensure an accurate delivery of charged particles, the facility currently uses a commercial charged-particle detector placed after the sample. We present here a transmission detector that will be placed between the particle accelerator and the biological specimen, allowing the irradiation of samples that would otherwise block radiation from reaching a detector behind the sample. Four detectors were fabricated with co-planar gold and aluminum electrodes thermally evaporated onto etched n-type crystalline silicon substrates, with device thicknesses ranging from 8.5 μm - 13.5 μm. We show coincident detections and pulse-height distributions of charged particles in both the transmission detector and the commercial detector above it. Detections are demonstrated at a range of operating conditions, including incoming particle type, count rate, and beam location on the detectors. The 13.5 μm detector is shown to work best to detect 2.7 MeV protons (H + ), and the 8.5 μm detector is shown to work best to detect 5.4 MeV alpha particles ( 4 He ++ ). The development of a transmission detector enables a range of new experiments to take place at RARAF on radiation-stopping samples such as thick tissues, targets that need immersion microscopy, and integrated microfluidic devices for handling larger quantities of cells and small organisms.

  19. A study on dose attenuation in bone density when TBI using diode detector and TLD

    International Nuclear Information System (INIS)

    Im, Hyun Sil; Lee, Jung Jin; Jang, Ahn Ki; KIm, Wan Sun

    2003-01-01

    Uniform dose distribution of the whole body is essential factor for the total body irradiation(TBI). In order to achieved this goal, we used to compensation filter to compensate body contour irregularity and thickness differences. But we can not compensate components of body, namely lung or bone. The purpose of this study is evaluation of dose attenuation in bone tissue when TBI using diode detectors and TLD system. The object of this study were 5 patients who undergo TBI at our hospital. Dosimetry system were diode detectors and TLD system. Treatment method was bilateral and delivered 10 MV X-ray from linear accelerator. Measurement points were head, neck, pelvis, knees and ankles. TLD used two patients and diode detectors used three patients. Results are as followed. All measured dose value were normalized skin dose. TLD dosimetry : Measured skin dose of head, neck, pelvis, knees and ankles were 92.78±3.3, 104.34±2.3, 98.03±1.4, 99.9±2.53, 98.17±0.56 respectably. Measured mid-depth dose of pelvis, knees and ankles were 86±1.82, 93.24±2.53, 91.50±2.84 respectably. There were 6.67%-11.65% dose attenuation at mid-depth in pelvis, knees and ankles. Diode detector : Measured skin dose of head, neck, pelvis, knees and ankles were 95.23±1.18, 98.33±0.6, 93.5±1.5, 87.3±1.5, 86.90±1.16 respectably. There were 4.53%-12.6% dose attenuation at mid-depth in pelvis, knees and ankles. We concluded that dose measurement with TLD or diode detector was inevitable when TBI treatment. Considered dose attenuation in bone tissue, We must have adequately deduction of compensator thickness that body portion involved bone tissue.

  20. Effect of III-nitride polarization on V{sub OC} in p-i-n and MQW solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Namkoong, Gon; Boland, Patrick; Foe, Kurniawan; Latimer, Kevin [Department of Electrical and Computer Engineering, Old Dominion University, Applied Research Center, 12050 Jefferson Avenue, Newport News, VA 23606 (United States); Bae, Si-Young; Shim, Jae-Phil; Lee, Dong-Seon [School of Information and Communications, Gwangju Institute of Science and Technology, 261 Cheomdan-gwagiro (Oryong-dong), Buk-gu, Gwangju 500-712 (Korea, Republic of); Jeon, Seong-Ran [Korea Photonics Technology Institute, 971-35, Wolchul-dong, Buk-gu, Gwangju, 500-779 (Korea, Republic of); Doolittle, W. Alan [School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA 30332 (United States)

    2011-02-15

    We performed detailed studies of the effect of polarization on III-nitride solar cells. Spontaneous and piezoelectric polarizations were assessed to determine their impacts upon the open circuit voltages (V{sub OC}) in p-i(InGaN)-n and multi-quantum well (MQW) solar cells. We found that the spontaneous polarization in Ga-polar p-i-n solar cells strongly modifies energy band structures and corresponding electric fields in a way that degrades V{sub OC} compared to non-polar p-i-n structures. In contrast, we found that piezoelectric polarization in Ga-polar MQW structures does not have a large influence on V{sub OC} compared to non-polar MQW structures. (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  1. The evaluation of dose of TSEI with TLD and diode detector of the uterine cervix cancer

    International Nuclear Information System (INIS)

    Je, Young Wan; Na, Keyung Su; Yoon, Il Kyu; Park, Heung Deuk

    2005-01-01

    To evaluate radiation dose and accuracy with TLD and diode detector when treat total skin with electron beam. Using Stanford Technique, we treated patient with Mycosis Fungoides. 6 MeV electron beam of LINAC was used and the SSD was 300 cm. Also, acrylic speller(0.8 cm) was used. The patient position was 6 types and the gantry angle was 64, 90 and 116 degree. The patient's skin dose and the output were detected 5 to 6 times with TLD and diode. The deviations of dose detected with TLD from tumor dose were CA + 6%, thigh + 8%, umbilicus + 4%, calf - 8%, vertex - 74.4%, deep axillae - 10.2%, anus and testis - 87%, sole - 86% and nails shielded with 4 mm lead + 4%. The deviations of dose detected with diode were - 4.5% ∼ + 5% at the patient center and - 1.1% ∼ + 1% at the speller. The deviation of total skin dose was + 8% ∼ - 8% and that deviation was within the acceptable range(±10%). The boost dose was irradiated for the low dose areas(vertex, anus, sole). The electron beam output detected at the sootier was stable. It is thought that the deviation of dose at patient center detected with diode was induced by detection point and patient position.

  2. Silicon diodes as an alternative to diamond detectors for depth dose curves and profile measurements of photon and electron radiation

    International Nuclear Information System (INIS)

    Scherf, Christian; Moog, Jussi; Licher, Joerg; Kara, Eugen; Roedel, Claus; Ramm, Ulla; Peter, Christiane; Zink, Klemens

    2009-01-01

    Background: Depth dose curves and lateral dose profiles should correspond to relative dose to water in any measured point, what can be more or less satisfied with different detectors. Diamond as detector material has similar dosimetric properties like water. Silicon diodes and ionization chambers are also commonly used to acquire dose profiles. Material and Methods: The authors compared dose profiles measured in an MP3 water phantom with a diamond detector 60003, unshielded and shielded silicon diodes 60008 and 60012 and a 0.125-cm 3 thimble chamber 233642 (PTW, Freiburg, Germany) for 6- and 25-MV photons. Electron beams of 6, 12 and 18 MeV were investigated with the diamond detector, the unshielded diode and a Markus chamber 23343. Results: The unshielded diode revealed relative dose differences at the water surface below +10% for 6-MV and +4% for 25-MV photons compared to the diamond data. These values decreased to less than 1% within the first millimeters of water depth. The shielded diode was only required to obtain correct data of the fall-off zones for photon beams larger than 10 x 10 cm 2 because of important contributions of low-energy scattered photons. For electron radiation the largest relative dose difference of -2% was observed with the unshielded silicon diode for 6 MeV within the build-up zone. Spatial resolutions were always best with the small voluminous silicon diodes. Conclusion: Relative dose profiles obtained with the two silicon diodes have the same degree of accuracy as with the diamond detector. (orig.)

  3. Amorphous silicon based radiation detectors

    International Nuclear Information System (INIS)

    Perez-Mendez, V.; Cho, G.; Drewery, J.; Jing, T.; Kaplan, S.N.; Qureshi, S.; Wildermuth, D.; Fujieda, I.; Street, R.A.

    1991-07-01

    We describe the characteristics of thin(1 μm) and thick (>30μm) hydrogenated amorphous silicon p-i-n diodes which are optimized for detecting and recording the spatial distribution of charged particles, x-rays and γ rays. For x-ray, γ ray, and charged particle detection we can use thin p-i-n photosensitive diode arrays coupled to evaporated layers of suitable scintillators. For direct detection of charged particles with high resistance to radiation damage, we use the thick p-i-n diode arrays. 13 refs., 7 figs

  4. Silicon P.I.N. Junctions used for studies of radiation damage; Etude de l'irradiation aux neutrons rapides du silicium au moyen de jonctions P.I.N

    Energy Technology Data Exchange (ETDEWEB)

    Lanore, J [Commissariat a l' Energie Atomique, Fontenay-aux-Roses (France). Centre d' Etudes Nucleaires

    1964-06-01

    Irradiation of silicon P.I.N. junction has been studied primarily for the purpose of developing a radiation damage dosimeter, but also for the purpose of investigating silicon itself. It is known that the rate of recombination of electrons and holes is a linear function of defects introduced by neutron irradiation. Two methods have been used to measure that rate of recombination: forward characteristic measurements, recovery time measurements. In order to explain how these two parameters depend on recombination rate we have given a theory of the P.I.N. junction. We have also given an idea of the carrier lifetime dependence versus temperature. Annealing effects in the range of 70 to 700 K have also been studied, we found five annealing stages with corresponding activation energies. As an application for these studies, we developed a radiation damage dosimeter with which we made several experiments in facilities such as Naiade or Marias. (author) [French] L'irradiation de structures P.I.N. etait faite dans le but d'etudier principalement la mise au point d'un dosimetre a ''radiation damage'' et aussi pour etudier plus profondement le silicium lui-meme. On sait que le taux de recombinaison electrons-trous est une fonction lineaire du taux de defauts introduits par irradiation aux neutrons. Deux methodes ont ete utilisees pour atteindre ce taux de recombinaison: mesures de la caracteristique directe, mesures du temps de retournement. Pour expliquer de quelle facon ces parametres dependent du taux de recombinaison. Nous avons donne une theorie de la jonction P.I.N. Nous avons aussi donne l'allure des variations du temps de vie des porteurs en fonction de la temperature. Nous avons d'autre part effectue des recuits entre 70 et 700 K, domaine dans lequel nous avons trouve cinq etapes de ''guerison'' avec les energies d'activation correspondantes. En application de ces etudes nous avons mis ou point un dosimetre a ''radiation damage'' avec lequel nous avons effectue des

  5. Silicon P.I.N. Junctions used for studies of radiation damage; Etude de l'irradiation aux neutrons rapides du silicium au moyen de jonctions P.I.N

    Energy Technology Data Exchange (ETDEWEB)

    Lanore, J. [Commissariat a l' Energie Atomique, Fontenay-aux-Roses (France). Centre d' Etudes Nucleaires

    1964-06-01

    Irradiation of silicon P.I.N. junction has been studied primarily for the purpose of developing a radiation damage dosimeter, but also for the purpose of investigating silicon itself. It is known that the rate of recombination of electrons and holes is a linear function of defects introduced by neutron irradiation. Two methods have been used to measure that rate of recombination: forward characteristic measurements, recovery time measurements. In order to explain how these two parameters depend on recombination rate we have given a theory of the P.I.N. junction. We have also given an idea of the carrier lifetime dependence versus temperature. Annealing effects in the range of 70 to 700 K have also been studied, we found five annealing stages with corresponding activation energies. As an application for these studies, we developed a radiation damage dosimeter with which we made several experiments in facilities such as Naiade or Marias. (author) [French] L'irradiation de structures P.I.N. etait faite dans le but d'etudier principalement la mise au point d'un dosimetre a ''radiation damage'' et aussi pour etudier plus profondement le silicium lui-meme. On sait que le taux de recombinaison electrons-trous est une fonction lineaire du taux de defauts introduits par irradiation aux neutrons. Deux methodes ont ete utilisees pour atteindre ce taux de recombinaison: mesures de la caracteristique directe, mesures du temps de retournement. Pour expliquer de quelle facon ces parametres dependent du taux de recombinaison. Nous avons donne une theorie de la jonction P.I.N. Nous avons aussi donne l'allure des variations du temps de vie des porteurs en fonction de la temperature. Nous avons d'autre part effectue des recuits entre 70 et 700 K, domaine dans lequel nous avons trouve cinq etapes de ''guerison'' avec les energies d'activation correspondantes. En application de ces etudes nous avons mis ou point un

  6. Solid State pH Sensor Based on Light Emitting Diodes (LED) As Detector Platform

    OpenAIRE

    Lau, King Tong; Shepherd, R.; Diamond, Danny; Diamond, Dermot

    2006-01-01

    A low-power, high sensitivity, very low-cost light emitting diode (LED)-based device developed for low-cost sensor networks was modified with bromocresol green membrane to work as a solid-state pH sensor. In this approach, a reverse-biased LED functioning as a photodiode is coupled with a second LED configured in conventional emission mode. A simple timer circuit measures how long (in microsecond) it takes for the photocurrent generated on the detector LED to discharge its capacitance from lo...

  7. Characteristics of Si-PIN diode X-ray detector with DSP electronics

    International Nuclear Information System (INIS)

    Dutta, Juhi; Tapader, Srijita; Bisoi, Abhijit; Ray, Sudatta; Saha Sarkar, M.; Pramanik, Dibyadyuti; Saha, Archisman

    2012-01-01

    In the present work, the studies to investigate the features of PIN diodes detector coupled with a digital processor have been extended. At low energies, backscattered Compton peaks are close in energy to photo peak of the gamma of interest. Thus the backscattered peaks pose a serious problem in the analysis of spectra of low energy gamma rays. It has been initiated some measurements to quantitatively estimate the same as function of energy and Z of the scatterer. Recently there has been application of backscattering in high-resolution gamma backscatter imaging for technical applications

  8. Characterization of a SiC MIS Schottky diode as RBS particle detector

    Science.gov (United States)

    Kaufmann, I. R.; Pick, A. C.; Pereira, M. B.; Boudinov, H. I.

    2018-02-01

    A 4H-SiC Schottky diode was investigated as a particle detector for Rutherford Backscattering Spectroscopy (RBS) experiment. The device was fabricated on a commercial 4H-SiC epitaxial n-type layer grown onto a 4H-SiC n+ type substrate wafer doped with nitrogen. Hafnium oxide with thickness of 1 nm was deposited by Atomic Layer Deposition and 10 nm of Ni were deposited by sputtering to form the Ni/HfO2/4H-SiC MIS Schottky structure. Current-Voltage curves with variable temperature were measured to extract the real Schottky Barrier Height (0.32 V) and ideality factor values (1.15). Reverse current and Capacitance-Voltage measurements were performed on the 4H-SiC detector and compared to a commercial Si barrier detector acquired from ORTEC. RBS data for four alpha energies (1, 1.5, 2 and 2.5 MeV) were collected from an Au/Si sample using the fabricated SiC and the commercial Si detectors simultaneously. The energy resolution for the fabricated detector was estimated to be between 75 and 80 keV.

  9. Near-infrared Raman spectroscopy using a diode laser and CCD detector for tissue diagnostics

    International Nuclear Information System (INIS)

    Gustafsson, U.

    1993-09-01

    This paper surveys the possibility to observe high-quality NIR Raman spectra of both fluorescent and non-fluorescent samples with the use of a diode laser, a fibre optic sample, a single spectrometer and a charge-coupled device (CCD) detector. A shifted excitation difference technique was implemented for removing the broad-band fluorescence emission from Raman spectra of the highly fluorescent samples. Raman spectra of 1.4-dioxane, toluene, rhodamine 6G, and HITCI in the 640 to 1840 cm -1 spectral region and 1.4-dioxane and toluene in the 400 to 3400 cm -1 spectral region have been recorded. The results open the field of sensitive tissue characterisation and the possibility of optical biopsy in vivo by using NIR Raman spectroscopy with fibre optic sampling, a single spectrometer, and a CCD detector

  10. High spatial resolution radiation detectors based on hydrogenated amorphous silicon and scintillator

    International Nuclear Information System (INIS)

    Jing, T.; Lawrence Berkeley Lab., CA

    1995-05-01

    Hydrogenated amorphous silicon (a-Si:H) as a large-area thin film semiconductor with ease of doping and low-cost fabrication capability has given a new impetus to the field of imaging sensors; its high radiation resistance also makes it a good material for radiation detectors. In addition, large-area microelectronics based on a-Si:H or polysilicon can be made with full integration of peripheral circuits, including readout switches and shift registers on the same substrate. Thin a-Si:H p-i-n photodiodes coupled to suitable scintillators are shown to be suitable for detecting charged particles, electrons, and X-rays. The response speed of CsI/a-Si:H diode combinations to individual particulate radiation is limited by the scintillation light decay since the charge collection time of the diode is very short (< 10ns). The reverse current of the detector is analyzed in term of contact injection, thermal generation, field enhanced emission (Poole-Frenkel effect), and edge leakage. A good collection efficiency for a diode is obtained by optimizing the p layer of the diode thickness and composition. The CsI(Tl) scintillator coupled to an a-Si:H photodiode detector shows a capability for detecting minimum ionizing particles with S/N ∼20. In such an arrangement a p-i-n diode is operated in a photovoltaic mode (reverse bias). In addition, a p-i-n diode can also work as a photoconductor under forward bias and produces a gain yield of 3--8 for shaping times of 1 micros. The mechanism of the formation of structured CsI scintillator layers is analyzed. Initial nucleation in the deposited layer is sensitive to the type of substrate medium, with imperfections generally catalyzing nucleation. Therefore, the microgeometry of a patterned substrate has a significant effect on the structure of the CsI growth

  11. High spatial resolution radiation detectors based on hydrogenated amorphous silicon and scintillator

    Energy Technology Data Exchange (ETDEWEB)

    Jing, Tao [Univ. of California, Berkeley, CA (United States). Dept. of Engineering-Nuclear Engineering

    1995-05-01

    Hydrogenated amorphous silicon (a-Si:H) as a large-area thin film semiconductor with ease of doping and low-cost fabrication capability has given a new impetus to the field of imaging sensors; its high radiation resistance also makes it a good material for radiation detectors. In addition, large-area microelectronics based on a-Si:H or polysilicon can be made with full integration of peripheral circuits, including readout switches and shift registers on the same substrate. Thin a-Si:H p-i-n photodiodes coupled to suitable scintillators are shown to be suitable for detecting charged particles, electrons, and X-rays. The response speed of CsI/a-Si:H diode combinations to individual particulate radiation is limited by the scintillation light decay since the charge collection time of the diode is very short (< 10ns). The reverse current of the detector is analyzed in term of contact injection, thermal generation, field enhanced emission (Poole-Frenkel effect), and edge leakage. A good collection efficiency for a diode is obtained by optimizing the p layer of the diode thickness and composition. The CsI(Tl) scintillator coupled to an a-Si:H photodiode detector shows a capability for detecting minimum ionizing particles with S/N ~20. In such an arrangement a p-i-n diode is operated in a photovoltaic mode (reverse bias). In addition, a p-i-n diode can also work as a photoconductor under forward bias and produces a gain yield of 3--8 for shaping times of 1 {micro}s. The mechanism of the formation of structured CsI scintillator layers is analyzed. Initial nucleation in the deposited layer is sensitive to the type of substrate medium, with imperfections generally catalyzing nucleation. Therefore, the microgeometry of a patterned substrate has a significant effect on the structure of the CsI growth.

  12. Simulation for spectral response of solar-blind AlGaN based p-i-n photodiodes

    Science.gov (United States)

    Xue, Shiwei; Xu, Jintong; Li, Xiangyang

    2015-04-01

    In this article, we introduced how to build a physical model of refer to the device structure and parameters. Simulations for solar-blind AlGaN based p-i-n photodiodes spectral characteristics were conducted in use of Silvaco TCAD, where device structure and parameters are comprehensively considered. In simulation, the effects of polarization, Urbach tail, mobility, saturated velocities and lifetime in AlGaN device was considered. Especially, we focused on how the concentration-dependent Shockley-Read-Hall (SRH) recombination model affects simulation results. By simulating, we analyzed the effects in spectral response caused by TAUN0 and TAUP0, and got the values of TAUN0 and TAUP0 which can bring a result coincides with test results. After that, we changed their values and made the simulation results especially the part under 255 nm performed better. In conclusion, the spectral response between 200 nm and 320 nm of solar-blind AlGaN based p-i-n photodiodes were simulated and compared with test results. We also found that TAUN0 and TAUP0 have a large impact on spectral response of AlGaN material.

  13. A Simple, Small-Scale Lego Colorimeter with a Light-Emitting Diode (LED) Used as Detector

    Science.gov (United States)

    Asheim, Jonas; Kvittingen, Eivind V.; Kvittingen, Lise; Verley, Richard

    2014-01-01

    This article describes how to construct a simple, inexpensive, and robust colorimeter from a few Lego bricks, in which one light-emitting diode (LED) is used as a light source and a second LED as a light detector. The colorimeter is suited to various grades and curricula.

  14. Correction of measured Gamma-Knife output factors for angular dependence of diode detectors and PinPoint ionization chamber.

    Science.gov (United States)

    Hršak, Hrvoje; Majer, Marija; Grego, Timor; Bibić, Juraj; Heinrich, Zdravko

    2014-12-01

    Dosimetry for Gamma-Knife requires detectors with high spatial resolution and minimal angular dependence of response. Angular dependence and end effect time for p-type silicon detectors (PTW Diode P and Diode E) and PTW PinPoint ionization chamber were measured with Gamma-Knife beams. Weighted angular dependence correction factors were calculated for each detector. The Gamma-Knife output factors were corrected for angular dependence and end effect time. For Gamma-Knife beams angle range of 84°-54°. Diode P shows considerable angular dependence of 9% and 8% for the 18 mm and 14, 8, 4 mm collimator, respectively. For Diode E this dependence is about 4% for all collimators. PinPoint ionization chamber shows angular dependence of less than 3% for 18, 14 and 8 mm helmet and 10% for 4 mm collimator due to volumetric averaging effect in a small photon beam. Corrected output factors for 14 mm helmet are in very good agreement (within ±0.3%) with published data and values recommended by vendor (Elekta AB, Stockholm, Sweden). For the 8 mm collimator diodes are still in good agreement with recommended values (within ±0.6%), while PinPoint gives 3% less value. For the 4 mm helmet Diodes P and E show over-response of 2.8% and 1.8%, respectively. For PinPoint chamber output factor of 4 mm collimator is 25% lower than Elekta value which is generally not consequence of angular dependence, but of volumetric averaging effect and lack of lateral electronic equilibrium. Diodes P and E represent good choice for Gamma-Knife dosimetry. Copyright © 2014 Associazione Italiana di Fisica Medica. Published by Elsevier Ltd. All rights reserved.

  15. Large area double p-i-n heterostructure for signal multiplexing and demultiplexing in the visible range

    International Nuclear Information System (INIS)

    Vieira, M.; Louro, P.; Fernandes, M.; Vieira, M.A.; Fantoni, A.; Barata, M.

    2009-01-01

    Results on the use of a double a-SiC:H p-i-n heterostructure for signal multiplexing and demultiplexing applications in the visible range, are presented. Modulated monochromatic beams together (multiplexing mode), or a single polychromatic beam (demultiplexing mode) impinge in the device and are absorbed, accordingly to their wavelength, giving rise to a time and wavelength dependent electrical field modulation. Red, green and blue pulsed input channels are transmitted together, each one with a specific transmission rate. The combined optical signal is analyzed by reading out, under different applied voltages, the generated photocurrent. Results show that in the multiplexing mode the output signal is balanced by the wavelength and transmission rate of each input channel, keeping the memory of the incoming optical carriers. In the demultiplexing mode the photocurrent is controlled by the applied voltage allowing regaining the transmitted information. An electrical model gives insight into the device operation.

  16. Phase regeneration of DPSK signals in a silicon waveguide with reverse-biased p-i-n junction

    DEFF Research Database (Denmark)

    Da Ros, Francesco; Vukovic, Dragana; Gajda, Andrzej

    2014-01-01

    Phase regeneration of differential phase-shift keying (DPSK) signals is demonstrated using a silicon waveguide as nonlinear medium for the first time. A p-i-n junction across the waveguide enables decreasing the nonlinear losses introduced by free-carrier absorption (FCA), thus allowing phase......-sensitive extinction ratios as high as 20 dB to be reached under continuous-wave (CW) pumping operation. Furthermore the regeneration properties are investigated under dynamic operation for a 10-Gb/s DPSK signal degraded by phase noise, showing receiver sensitivity improvements above 14 dB. Different phase noise...... frequencies and amplitudes are examined, resulting in an improvement of the performance of the regenerated signal in all the considered cases....

  17. Beam related response of in vivo diode detectors for external radiotherapy

    Energy Technology Data Exchange (ETDEWEB)

    Baci, Syrja, E-mail: sbarci2013@gmail.com [Department of Physics, Faculty of Natural Sciences, University of Gjirokastra, “Eqrem Çabej” (Albania); Telhaj, Ervis [Department of Medical Physics, Hygeia Hospital Tirana (Albania); Malkaj, Partizan [Department of Physical Engineering, Polytechnic University, Tirana (Albania)

    2016-03-25

    In Vivo Dosimetry (IVD) is a set of methods used in cancer treatment clinics to determine the real dose of radiation absorbed by target volume in a patient’s body. IVD has been widely implemented in radiotherapy treatment centers and is now recommended part of Quality Assurance program by many International health and radiation organizations. Because of cost and lack of specialized personnel, IVD has not been practiced as yet, in Albanian radiotherapy clinics. At Hygeia Hospital Tirana, patients are irradiated with high energy photons generated by Elekta Synergy Accelerators. We have recently started experimenting with the purpose of establishing an IVD practice at this hospital. The first set of experiments was aimed at calibration of diodes that are going to be used for IVD. PMMA, phantoms by PTW were used to calibrate p – type Si, semiconductor diode dosimeters, made by PTW Freiburg for entrance dose. Response of the detectors is affected by energy of the beam, accumulated radiation dose, dose rate, temperature, angle against the beam axis, etc. Here we present the work done for calculating calibration factor and correction factors of source to surface distance, field size, and beam incidence for the entrance dose for both 6 MV photon beam and 18 MV photon beam. Dependence of dosimeter response was found to be more pronounced with source to surface distance as compared to other variables investigated.

  18. Beam related response of in vivo diode detectors for external radiotherapy

    International Nuclear Information System (INIS)

    Baci, Syrja; Telhaj, Ervis; Malkaj, Partizan

    2016-01-01

    In Vivo Dosimetry (IVD) is a set of methods used in cancer treatment clinics to determine the real dose of radiation absorbed by target volume in a patient’s body. IVD has been widely implemented in radiotherapy treatment centers and is now recommended part of Quality Assurance program by many International health and radiation organizations. Because of cost and lack of specialized personnel, IVD has not been practiced as yet, in Albanian radiotherapy clinics. At Hygeia Hospital Tirana, patients are irradiated with high energy photons generated by Elekta Synergy Accelerators. We have recently started experimenting with the purpose of establishing an IVD practice at this hospital. The first set of experiments was aimed at calibration of diodes that are going to be used for IVD. PMMA, phantoms by PTW were used to calibrate p – type Si, semiconductor diode dosimeters, made by PTW Freiburg for entrance dose. Response of the detectors is affected by energy of the beam, accumulated radiation dose, dose rate, temperature, angle against the beam axis, etc. Here we present the work done for calculating calibration factor and correction factors of source to surface distance, field size, and beam incidence for the entrance dose for both 6 MV photon beam and 18 MV photon beam. Dependence of dosimeter response was found to be more pronounced with source to surface distance as compared to other variables investigated.

  19. Near space radiation dosimetry in Australian outback using a balloon borne energy compensated PIN diode detector

    International Nuclear Information System (INIS)

    Mukherjee, Bhaskar; Wu, Xiaofeng; Maczka, Tomasz; Kwan, Trevor; Huang, Yijun; Mares, Vladimir

    2016-01-01

    This paper reports the near space ballooning experiment carried out at Australian outback town West Wyalong (33°51′S, 147°24′E) on 19 July 2015. Several dedicated electronic detectors including digital temperature and acceleration (vibration) sensors and an energy compensated PIN-diode gamma ray dosimeter were installed in a thermally insulated Styrofoam payload box. A 9 V Lithium-Polymer battery powered all the devices. The payload box was attached to a helium-filled latex weather balloon and set afloat. The balloon reached a peak burst altitude of 30 km and then soft-landed aided by a self-deploying parachute 66.2 km away form the launch site. The payload box was retrieved and data collected from the electronic sensors analysed. The integrated cosmic ray induced photon ambient dose equivalent recorded by the PIN diode detector was evaluated to be 0.36 ± 0.05 μSv. Furthermore, a high-altitude extended version of commercially available aviation dosimetry package EPCARD.Net (European Program package for the Calculation of Aviation Route Doses) was used to calculate the ambient dose equivalents during the balloon flight. The radiation environment originated from the secondary cosmic ray shower is composed of neutrons, protons, electrons, muons, pions and photons. The photon ambient dose equivalent estimated by the EPCARD.Net code found to be 0.47 ± 0.09 μSv. The important aspects of balloon based near-space radiation dosimetry are highlighted in this paper. - Highlights: • Near space ballooning experiment in Australian outback. • A PIN diode based gamma dosimeter was sent to an altitude of 30 km. • Ambient photon dose equivalent was evaluated as a function of altitude. • Results agreed well with the simulated data delivered by EPCARD.Net Code. • The atmospheric temperature and payload jerks were also assessed.

  20. Photoinduced entropy of InGaN/GaN p-i-n double-heterostructure nanowires

    KAUST Repository

    Alfaraj, Nasir

    2017-04-17

    The photoinduced entropy of InGaN/GaN p-i-n nanowires was investigated using temperature-dependent (6–290 K) photoluminescence. We also analyzed the photocarrier dynamics in the InGaN active regions using time-resolved photoluminescence. An increasing trend in the amount of generated photoinduced entropy of the system above 250 K was observed, while we observed an oscillatory trend in the generated entropy of the system below 250 K that stabilizes between 200 and 250 K. Strong exciton localization in indium-rich clusters, carrier trapping by surface defect states, and thermodynamic entropy effects were examined and related to the photocarrier dynamics. We conjecture that the amount of generated photoinduced entropy of the system increases as more non-radiative channels become activated and more shallowly localized carriers settle into deeply localized states; thereby, additional degrees of uncertainty related to the energy of states involved in thermionic transitions are attained.

  1. The effect of hole transporting layer in charge accumulation properties of p-i-n perovskite solar cells

    Directory of Open Access Journals (Sweden)

    Fedros Galatopoulos

    2017-07-01

    Full Text Available The charge accumulation properties of p-i-n perovskite solar cells were investigated using three representative organic and inorganic hole transporting layer (HTL: (a Poly(3,4-ethylenedioxythiophene-poly(styrenesulfonate (PEDOT:PSS, Al 4083, (b copper-doped nickel oxide (Cu:NiOx, and (c Copper oxide (CuO. Through impedance spectroscopy analysis and modelling, it is shown that charge accumulation is decreased in the HTL/perovskite interface, between PEDOT:PSS to Cu:NiOx and CuO. This was indicative from the decrease in double layer capacitance (Cdl and interfacial charge accumulation capacitance (Cel, resulting in an increase to recombination resistance (Rrec, thus decreased charge recombination events between the three HTLs. Through AFM measurements, it is also shown that the reduced recombination events (followed by the increase in Rrec are also a result of increased grain size between the three HTLs, thus reduction in the grain boundary area. These charge accumulation properties of the three HTLs have resulted in an increase to the power conversion efficiency between the PEDOT:PSS (8.44%, Cu:NiOx (11.45%, and CuO (15.3%-based devices.

  2. Optoelectric Properties of GaInP p-i-n Solar Cells with Different i-Layer Thicknesses

    Directory of Open Access Journals (Sweden)

    Tsung-Shine Ko

    2015-01-01

    Full Text Available The optoelectric properties of GaInP p-i-n solar cells with different intrinsic layer (i-layer thicknesses from 0.25 to 1 μm were studied. Both emission intensity and full width at half maximum features of the photoluminescence spectrum indicate that the optimum i-layer thickness would be between 0.5 and 0.75 μm. The integrated current results of photocurrent experiment also point out that the samples with 0.5 to 0.75 μm i-layer thicknesses have optimum value around 156 nA. Electroreflectance measurements reveal that the built-in electric field strength of the sample gradually deviates from the theoretical value larger when i-layer thickness of the sample is thicker than 0.75 μm. I-V measurements also confirm crystal quality for whole samples by obtaining the information about short currents of photovoltaic performances. A series of experiments reflect that thicker i-layer structure would induce more defects generation lowering crystal quality.

  3. Highly transparent front electrodes with metal fingers for p-i-n thin-film silicon solar cells

    Directory of Open Access Journals (Sweden)

    Moulin Etienne

    2015-01-01

    Full Text Available The optical and electrical properties of transparent conductive oxides (TCOs, traditionally used in thin-film silicon (TF-Si solar cells as front-electrode materials, are interlinked, such that an increase in TCO transparency is generally achieved at the cost of reduced lateral conductance. Combining a highly transparent TCO front electrode of moderate conductance with metal fingers to support charge collection is a well-established technique in wafer-based technologies or for TF-Si solar cells in the substrate (n-i-p configuration. Here, we extend this concept to TF-Si solar cells in the superstrate (p-i-n configuration. The metal fingers are used in conjunction with a millimeter-scale textured foil, attached to the glass superstrate, which provides an antireflective and retroreflective effect; the latter effect mitigates the shadowing losses induced by the metal fingers. As a result, a substantial increase in power conversion efficiency, from 8.7% to 9.1%, is achieved for 1-μm-thick microcrystalline silicon solar cells deposited on a highly transparent thermally treated aluminum-doped zinc oxide layer combined with silver fingers, compared to cells deposited on a state-of-the-art zinc oxide layer.

  4. Photoinduced entropy of InGaN/GaN p-i-n double-heterostructure nanowires

    KAUST Repository

    Alfaraj, Nasir; Mitra, Somak; Wu, Feng; Ajia, Idris A.; Janjua, Bilal; Prabaswara, Aditya; Aljefri, Renad A.; Sun, Haiding; Ng, Tien Khee; Ooi, Boon S.; Roqan, Iman S.; Li, Xiaohang

    2017-01-01

    The photoinduced entropy of InGaN/GaN p-i-n nanowires was investigated using temperature-dependent (6–290 K) photoluminescence. We also analyzed the photocarrier dynamics in the InGaN active regions using time-resolved photoluminescence. An increasing trend in the amount of generated photoinduced entropy of the system above 250 K was observed, while we observed an oscillatory trend in the generated entropy of the system below 250 K that stabilizes between 200 and 250 K. Strong exciton localization in indium-rich clusters, carrier trapping by surface defect states, and thermodynamic entropy effects were examined and related to the photocarrier dynamics. We conjecture that the amount of generated photoinduced entropy of the system increases as more non-radiative channels become activated and more shallowly localized carriers settle into deeply localized states; thereby, additional degrees of uncertainty related to the energy of states involved in thermionic transitions are attained.

  5. A compact 16-module camera using 64-pixel CsI(Tl)/Si p-i-n photodiode imaging modules

    Science.gov (United States)

    Choong, W.-S.; Gruber, G. J.; Moses, W. W.; Derenzo, S. E.; Holland, S. E.; Pedrali-Noy, M.; Krieger, B.; Mandelli, E.; Meddeler, G.; Wang, N. W.; Witt, E. K.

    2002-10-01

    We present a compact, configurable scintillation camera employing a maximum of 16 individual 64-pixel imaging modules resulting in a 1024-pixel camera covering an area of 9.6 cm/spl times/9.6 cm. The 64-pixel imaging module consists of optically isolated 3 mm/spl times/3 mm/spl times/5 mm CsI(Tl) crystals coupled to a custom array of Si p-i-n photodiodes read out by a custom integrated circuit (IC). Each imaging module plugs into a readout motherboard that controls the modules and interfaces with a data acquisition card inside a computer. For a given event, the motherboard employs a custom winner-take-all IC to identify the module with the largest analog output and to enable the output address bits of the corresponding module's readout IC. These address bits identify the "winner" pixel within the "winner" module. The peak of the largest analog signal is found and held using a peak detect circuit, after which it is acquired by an analog-to-digital converter on the data acquisition card. The camera is currently operated with four imaging modules in order to characterize its performance. At room temperature, the camera demonstrates an average energy resolution of 13.4% full-width at half-maximum (FWHM) for the 140-keV emissions of /sup 99m/Tc. The system spatial resolution is measured using a capillary tube with an inner diameter of 0.7 mm and located 10 cm from the face of the collimator. Images of the line source in air exhibit average system spatial resolutions of 8.7- and 11.2-mm FWHM when using an all-purpose and high-sensitivity parallel hexagonal holes collimator, respectively. These values do not change significantly when an acrylic scattering block is placed between the line source and the camera.

  6. Solid State pH Sensor Based on Light Emitting Diodes (LED As Detector Platform

    Directory of Open Access Journals (Sweden)

    Dermot Diamond

    2006-08-01

    Full Text Available A low-power, high sensitivity, very low-cost light emitting diode (LED-baseddevice developed for low-cost sensor networks was modified with bromocresol greenmembrane to work as a solid-state pH sensor. In this approach, a reverse-biased LEDfunctioning as a photodiode is coupled with a second LED configured in conventionalemission mode. A simple timer circuit measures how long (in microsecond it takes for thephotocurrent generated on the detector LED to discharge its capacitance from logic 1 ( 5 Vto logic 0 ( 1.7 V. The entire instrument provides an inherently digital output of lightintensity measurements for a few cents. A light dependent resistor (LDR modified withsimilar sensor membrane was also used as a comparison method. Both the LED sensor andthe LDR sensor responded to various pH buffer solutions in a similar way to obtainsigmoidal curves expected of the dye. The pKa value obtained for the sensors was found toagree with the literature value.

  7. Solid State pH Sensor Based on Light Emitting Diodes (LED) As Detector Platform

    Science.gov (United States)

    Lau, King Tong; Shepherd, R.; Diamond, Danny; Diamond, Dermot

    2006-01-01

    A low-power, high sensitivity, very low-cost light emitting diode (LED)-based device developed for low-cost sensor networks was modified with bromocresol green membrane to work as a solid-state pH sensor. In this approach, a reverse-biased LED functioning as a photodiode is coupled with a second LED configured in conventional emission mode. A simple timer circuit measures how long (in microsecond) it takes for the photocurrent generated on the detector LED to discharge its capacitance from logic 1 (+5 V) to logic 0 (+1.7 V). The entire instrument provides an inherently digital output of light intensity measurements for a few cents. A light dependent resistor (LDR) modified with similar sensor membrane was also used as a comparison method. Both the LED sensor and the LDR sensor responded to various pH buffer solutions in a similar way to obtain sigmoidal curves expected of the dye. The pKa value obtained for the sensors was found to agree with the literature value.

  8. Spin-photon entangling diode

    DEFF Research Database (Denmark)

    Flindt, Christian; Sørensen, A. S.; Lukin, M. D.

    2007-01-01

    We propose a semiconductor device that can electrically generate entangled electron spin-photon states, providing a building block for entanglement of distant spins. The device consists of a p-i-n diode structure that incorporates a coupled double quantum dot. We show that electronic control of t...

  9. Measurement of Rectal Radiation dose in the Patients with Uterine Cervix fencer using In Vivo Dosimetry(Diode Detector)

    International Nuclear Information System (INIS)

    Kim, Sung Kee; Kim, Wan Sun

    2004-01-01

    A rectum and a bladder should be carefully considered in order to decrease side effects when HDR patient of uterine cervix cancer. Generally speaking, the value of dosimeter at a rectum and a bladder only depends on the value of a planning equipment, while some analyses of the value of dosimetry at rectum with TLD has been reported Or the contrary, it is hardly to find a report with in vivo dosimetry(diode detector). On this thesis, we would like to suggest the following. When a patient of uterine cervix cancer is in therapy, it is helpful to put a diode detector inside of a rectum in order to measure the rectal dose Based upon the result of the dosimetry, the result can be used as basic data at decreasing side effects. Six patients of uterine cervix cancer(four with tandem and ovoid, one with cylinder, and the other one with tandem and cylinder) who had been irradiated with HDR. Ir-192 totally 28 times from February 2003 to June 2003. We irradiated twice in the same distant spots with anterior film and lateral film whenever we measured with a diode detector. Then we did planning and compared each film. The result of the measurement 4 patients with a diode detector is the following. The average and deviation from 3 patients with tandem and ovoid were 274±13.4 cGy, from 1 patient with tandem and ovoid were 126.1±7.2 cGy, from 1 patient with cylinder were 99.7±7.1 cGy, and from 1 patient with tandem and cylinder were 77.7±11.5 cGy. It is difficult to predict how the side effect of a rectum since the result of measurement with a diode detector depends on the state of a rectum. According to the result of the study, it is effective to use a TLD or an in vivo dosimetry and measure a rectum in order to consider the side effect. It is very necessary to decrease the amount of irradiation by controlling properly the duration of the irradiation and gauze packing, and by using shield equipment especially when side effects can be expected.

  10. Improved efficiency of NiOx-based p-i-n perovskite solar cells by using PTEG-1 as electron transport layer

    NARCIS (Netherlands)

    Groeneveld, Bart G. H. M.; Najafi, Mehrdad; Steensma, Bauke; Adjokatse, Sampson; Fang, Hong-Hua; Jahani, Fatemeh; Qiu, Li; ten Brink, Gert H.; Hummelen, Jan C.; Loi, Maria Antonietta

    We present efficient p-i-n type perovskite solar cells using NiOx as the hole transport layer and a fulleropyrrolidine with a triethylene glycol monoethyl ether side chain (PTEG-1) as electron transport layer. This electron transport layer leads to higher power conversion efficiencies compared to

  11. Enhanced power conversion efficiency of p-i-n type organic solar cells by employing a p-layer of palladium phthalocyanine

    KAUST Repository

    Kim, Inho; Haverinen, Hanna M.; Li, Jian; Jabbour, Ghassan E.

    2010-01-01

    We demonstrate an enhancement in the power conversion efficiency (PCE) of p-i-n type organic solar cells consisting of zinc phthalocyanine (ZnPc) and fullerene (C60) using a p-layer of palladium phthalocyanine (PdPc). Solar cells employing three

  12. Shot-Noise-Limited Dual-Beam Detector for Atmospheric Trace-Gas Monitoring with Near-Infrared Diode Lasers

    Science.gov (United States)

    Durry, Georges; Pouchet, Ivan; Amarouche, Nadir; Danguy, Théodore; Megie, Gerard

    2000-10-01

    A dual-beam detector is used to measure atmospheric trace species by differential absorption spectroscopy with commercial near-infrared InGaAs laser diodes. It is implemented on the Spectrom tre Diodes Laser Accordables, a balloonborne tunable diode laser spectrometer devoted to the in situ monitoring of CH 4 and H 2 O. The dual-beam detector is made of simple analogical subtractor circuits combined with InGaAs photodiodes. The detection strategy consists in taking the balanced analogical difference between the reference and the sample signals detected at the input and the output of an open optical multipass cell to apply the full dynamic range of the measurements (16 digits) to the weak molecular absorption information. The obtained sensitivity approaches the shot-noise limit. With a 56-m optical cell, the detection limit obtained when the spectra is recorded within 8 ms is 10 4 (expressed in absorbance units). The design and performances of both a simple substractor and an upgraded feedback substractor circuit are discussed with regard to atmospheric in situ CH 4 absorption spectra measured in the 1.653- m region. Mixing ratios are obtained from the absorption spectra by application of a nonlinear least-squares fit to the full molecular line shape in conjunction with in situ P and T measurements.

  13. Results from a 64-pixel PIN-diode detector system for low-energy beta-electrons

    Energy Technology Data Exchange (ETDEWEB)

    Wuestling, Sascha, E-mail: sascha.wuestling@kit.ed [Forschungszentrum Karlsruhe, Institut fuer Prozessdatenverarbeitung und Elektronik, Postfach 3640, 76021 Karlsruhe (Germany); Fraenkle, F.; Habermehl, F.; Renschler, P. [Universitaet Karlsruhe - TH, Institut fuer Experimentelle Kernphysik, Postfach 6980, 76128 Karlsruhe (Germany); Steidl, M [Forschungszentrum Karlsruhe, Institut fuer Kernphysik, Postfach 3640, 76021 Karlsruhe (Germany)

    2010-12-11

    The KATRIN neutrino mass experiment is based on a precise energy measurement ({Delta}E/E=5x10{sup -5}) of electrons emerging from tritium beta decay (E{sub max}=18.6 keV). This is done by a large electrostatic retarding spectrometer (MAC-E Filter), which is followed by an electron detector. Key requirements for this detector are a large sensitive area ({approx}80 cm{sup 2}), a certain energy resolution ({Delta}E=600 eV - 18.6 keV) but also a certain spatial resolution ({approx}3 mm), which leads to a multi-pixel design. As a tentative design on the way to the final detector, but also for operational service on the so-called pre-spectrometer experiment, a detector system with a reduced size (16 cm{sup 2}) and a reduced pixel number (64), making use of a monolithic segmented silicon PIN diode, was designed and built. While the design and very first measurements have been presented in Wuestling et al. , this publication shows the operational performance of the detector system. The robust concept of the electronics allowed adaptation to mechanically different experimental setups. The spacial resolution of the detector system proved to be essential in examining Penning trap induced background and other effects in the pre-spectrometer experiment. The detector performance test runs include energy resolution and calibration, background rates, correlation between pixels (crosstalk), spatially resolved rate analysis, and a dead-layer measurement . The detector allows for background searches with a sensitivity as low as 1.3x10{sup -3} cps/cm{sup 2} in the energy range of 20 keV. This allows the pre-spectrometer to be characterized with e-gun illumination with a signal to background ratio of better than 10{sup 5} and the search for ultra low Penning discharge emissions.

  14. Results from a 64-pixel PIN-diode detector system for low-energy beta-electrons

    Science.gov (United States)

    Wuestling, Sascha; Fraenkle, F.; Habermehl, F.; Renschler, P.; Steidl, M.

    2010-12-01

    The KATRIN neutrino mass experiment is based on a precise energy measurement (Δ E/ E=5×10 -5) of electrons emerging from tritium beta decay ( Emax=18.6 keV). This is done by a large electrostatic retarding spectrometer (MAC-E Filter), which is followed by an electron detector. Key requirements for this detector are a large sensitive area (˜80 cm 2), a certain energy resolution (Δ E=600 eV @ 18.6 keV) but also a certain spatial resolution (˜3 mm), which leads to a multi-pixel design. As a tentative design on the way to the final detector, but also for operational service on the so-called pre-spectrometer experiment, a detector system with a reduced size (16 cm 2) and a reduced pixel number (64), making use of a monolithic segmented silicon PIN diode, was designed and built. While the design and very first measurements have been presented in Wuestling et al. [6], this publication shows the operational performance of the detector system. The robust concept of the electronics allowed adaptation to mechanically different experimental setups. The spacial resolution of the detector system proved to be essential in examining Penning trap induced background and other effects in the pre-spectrometer experiment. The detector performance test runs include energy resolution and calibration, background rates, correlation between pixels (crosstalk), spatially resolved rate analysis, and a dead-layer measurement [7]. The detector allows for background searches with a sensitivity as low as 1.3×10 -3 cps/cm 2 in the energy range of 20 keV. This allows the pre-spectrometer to be characterized with e-gun illumination with a signal to background ratio of better than 10 5 and the search for ultra low Penning discharge emissions.

  15. Paired emitter-detector light emitting diodes for the measurement of lead(II) and cadmium(II)

    Energy Technology Data Exchange (ETDEWEB)

    Lau, K.-T. [Adaptive Sensors Group, National Centre for Sensor Research, School of Chemical Sciences, Dublin City University, Dublin 9 (Ireland)]. E-mail: kim.lau@dcu.ie; McHugh, Eimear [Adaptive Sensors Group, National Centre for Sensor Research, School of Chemical Sciences, Dublin City University, Dublin 9 (Ireland); Baldwin, Susan [Adaptive Sensors Group, National Centre for Sensor Research, School of Chemical Sciences, Dublin City University, Dublin 9 (Ireland); Diamond, Dermot [Adaptive Sensors Group, National Centre for Sensor Research, School of Chemical Sciences, Dublin City University, Dublin 9 (Ireland)]. E-mail: Dermot.diamond@dcu.ie

    2006-05-31

    A transmittance mode optical device based on using a reverse biased light emitting diode (LED) as light detector has been developed for colorimetric analysis. This new optical device was validated with bromocresol green dye for absorbance measurements before being employed for detecting cadmium(II) and lead(II) in water. Results show that the performance of this LED-based device is comparable to much more expensive bench top UV-vis instruments, but with the advantages of being low cost, low power and simple to operate.

  16. Paired emitter-detector light emitting diodes for the measurement of lead(II) and cadmium(II)

    International Nuclear Information System (INIS)

    Lau, K.-T.; McHugh, Eimear; Baldwin, Susan; Diamond, Dermot

    2006-01-01

    A transmittance mode optical device based on using a reverse biased light emitting diode (LED) as light detector has been developed for colorimetric analysis. This new optical device was validated with bromocresol green dye for absorbance measurements before being employed for detecting cadmium(II) and lead(II) in water. Results show that the performance of this LED-based device is comparable to much more expensive bench top UV-vis instruments, but with the advantages of being low cost, low power and simple to operate

  17. A miniature silicon diode matrix detector for in vivo measurement of 133Xe disappearance following local tissue injection

    DEFF Research Database (Denmark)

    Bendtsen, K; Svendsen, Jesper Hastrup; Rasmussen, H B

    1992-01-01

    have the capability of measuring the lowest energies (25-40 keV) of gamma and x-ray emitters with sufficient efficiency when applied on the skin surface and close to the indicator depot. The purpose of the present study was firstly to evaluate a portable Si photodiode matrix detector system, composed...... and sensitivity within the range 20-38 degrees C and calibrated to +/- 1% between diodes. The in vivo investigations comprised two SC injections on humans with four measuring periods for comparison, and four SC and five SM injections on dogs, resulting in eight and five measuring periods for comparison. Only when...

  18. Absorbance detector for high performance liquid chromatography based on a deep-UV light-emitting diode at 235nm.

    Science.gov (United States)

    da Silveira Petruci, João Flavio; Liebetanz, Michael G; Cardoso, Arnaldo Alves; Hauser, Peter C

    2017-08-25

    In this communication, we describe a flow-through optical absorption detector for HPLC using for the first time a deep-UV light-emitting diode with an emission band at 235nm as light source. The detector is also comprised of a UV-sensitive photodiode positioned to enable measurement of radiation through a flow-through cuvette with round aperture of 1mm diameter and optical path length of 10mm, and a second one positioned as reference photodiode; a beam splitter and a power supply. The absorbance was measured and related to the analyte concentration by emulating the Lambert-Beer law with a log-ratio amplifier circuitry. This detector showed noise levels of 0.30mAU, which is comparable with our previous LED-based detectors employing LEDs at 280 and 255nm. The detector was coupled to a HPLC system and successfully evaluated for the determination of the anti-diabetic drugs pioglitazone and glimepiride in an isocratic separation and the benzodiazepines flurazepam, oxazepam and clobazam in a gradient elution. Good linearities (r>0.99), a precision better than 0.85% and limits of detection at sub-ppm levels were achieved. Copyright © 2017 Elsevier B.V. All rights reserved.

  19. Silicon PIN diode hybrid arrays for charged particle detection: Building blocks for vertex detectors at the SSC

    International Nuclear Information System (INIS)

    Kramer, G.; Gaalema, S.; Shapiro, S.L.; Dunwoodie, W.M.; Arens, J.F.; Jernigan, J.G.

    1989-05-01

    Two-dimensional arrays of solid state detectors have long been used in visible and infrared systems. Hybrid arrays with separately optimized detector and readout substrates have been extensively developed for infrared sensors. The characteristics and use of these infrared readout chips with silicon PIN diode arrays produced by MICRON SEMICONDUCTOR for detecting high-energy particles are reported. Some of these arrays have been produced in formats as large as 512 /times/ 512 pixels; others have been radiation hardened to total dose levels beyond 1 Mrad. Data generation rates of 380 megasamples/second have been achieved. Analog and digital signal transmission and processing techniques have also been developed to accept and reduce these high data rates. 9 refs., 15 figs., 2 tabs

  20. Super high voltage Schottky diode with low leakage current for x- and γ-ray detector application

    International Nuclear Information System (INIS)

    Kosyachenko, L. A.; Sklyarchuk, V. M.; Sklyarchuk, O. F.; Maslyanchuk, O. L.; Gnatyuk, V. A.; Aoki, T.

    2009-01-01

    A significant improvement in x-/γ-ray detector performance has been achieved by forming both rectifying and near-Ohmic contacts by the deposition of Ni on opposite surfaces of semi-insulating CdTe crystals pretreated by special chemical etching and Ar-ion bombardment with different parameters. The reduced injection of the minority carriers from the near-Ohmic contact in the neutral part of the diode provides low leakage current even at high bias ( 2 at 2000 V and 293 K). The electrical properties of the detectors are well described quantitatively by the generation-recombination Sah-Noyce-Shockley theory excepting the high reverse voltage range where some injection of minority carriers takes place

  1. A monolithically integrated detector-preamplifier on high-resistivity silicon

    International Nuclear Information System (INIS)

    Holland, S.; Spieler, H.

    1990-02-01

    A monolithically integrated detector-preamplifier on high-resistivity silicon has been designed, fabricated and characterized. The detector is a fully depleted p-i-n diode and the preamplifier is implemented in a depletion-mode PMOS process which is compatible with detector processing. The amplifier is internally compensated and the measured gain-bandwidth product is 30 MHz with an input-referred noise of 15 nV/√Hz in the white noise regime. Measurements with an Am 241 radiation source yield an equivalent input noise charge of 800 electrons at 200 ns shaping time for a 1.4 mm 2 detector with on-chip amplifier in an experimental setup with substantial external pickup

  2. CHICSi - a compact ultra-high vacuum compatible detector system for nuclear reaction experiments at storage rings. II. Detectors

    Energy Technology Data Exchange (ETDEWEB)

    Golubev, P.; Avdeichikov, V.; Carlen, L.; Jakobsson, B. E-mail: bo.jakobsson@kosufy.lu.se; Siwek, A.; Veldhuizen, E.J. van; Westerberg, L.; Whitlow, H.J

    2003-03-11

    We describe the detectors for identification of charged particles and fragments in CHICSi, a large solid angle multi-telescope system mounted inside an ultra-high vacuum (UHV), cluster-jet target chamber. CHICSi performs nuclear reaction experiments at storage rings. The telescopes consist of a first very thin, 10-14 {mu}m Si detector, a second 300 {mu}m (or possibly 500 {mu}m) ion implanted Si detector supplemented by a 6 mm GSO(Ce) scintillator read out by a photodiode (PD) or by a third 300 {mu}m Si detector. The telescopes provide full charge separation up to Z=17 and mass resolution up to A=9 in the energy range 0.7-60A MeV. The thin p-i-n diode detector, etched out from a 280 {mu}m Si wafer, and the GSO/PD detector, both exclusively developed for CHICSi, provide an energy resolution {<=}8%, while the standard 300 {mu}m detectors have {<=}2% energy resolution. Radiation stability of the Si detectors is confirmed up to an integrated flux of 10{sup 10} alpha particles. The GSO detector has 70% light collection efficiency with the optical coupling to the PD a simple open, 0.2 mm, gap. A new method, developed to perform absolute energy calibration for the GSO/PD detector is presented.

  3. CHICSi - a compact ultra-high vacuum compatible detector system for nuclear reaction experiments at storage rings. II. Detectors

    International Nuclear Information System (INIS)

    Golubev, P.; Avdeichikov, V.; Carlen, L.; Jakobsson, B.; Siwek, A.; Veldhuizen, E.J. van; Westerberg, L.; Whitlow, H.J.

    2003-01-01

    We describe the detectors for identification of charged particles and fragments in CHICSi, a large solid angle multi-telescope system mounted inside an ultra-high vacuum (UHV), cluster-jet target chamber. CHICSi performs nuclear reaction experiments at storage rings. The telescopes consist of a first very thin, 10-14 μm Si detector, a second 300 μm (or possibly 500 μm) ion implanted Si detector supplemented by a 6 mm GSO(Ce) scintillator read out by a photodiode (PD) or by a third 300 μm Si detector. The telescopes provide full charge separation up to Z=17 and mass resolution up to A=9 in the energy range 0.7-60A MeV. The thin p-i-n diode detector, etched out from a 280 μm Si wafer, and the GSO/PD detector, both exclusively developed for CHICSi, provide an energy resolution ≤8%, while the standard 300 μm detectors have ≤2% energy resolution. Radiation stability of the Si detectors is confirmed up to an integrated flux of 10 10 alpha particles. The GSO detector has 70% light collection efficiency with the optical coupling to the PD a simple open, 0.2 mm, gap. A new method, developed to perform absolute energy calibration for the GSO/PD detector is presented

  4. Fabrication, characterization and simulation of 4H-SiC Schottky diode alpha particle detectors for pyroprocessing actinide monitoring

    Science.gov (United States)

    Garcia, Timothy Richard

    Pyroprocessing is a method of using high-temperature molten salts and electric fields to separate and collect fuel isotopes of used nuclear fuel. It has been has been tested in the U.S. at Idaho National Laboratory as a key step in closing the nuclear fuel cycle. One technical problem with the pyroprocessing method is a lack of knowledge regarding the actinide concentrations in the salt bath during operation, since on-line techniques for measuring these concentrations are not presently available. 4H-SiC Schottky diode detectors can potentially fulfill this need. Such detectors would operate in contact with the molten salt, and measure concentrations via alpha-particle spectroscopy. This work seeks to fabricate and characterize 4H-SiC Schottky diode detectors at high temperature, model the alpha particle spectrum expected in a molten salt, and model the operation of the detectors to confirm the physics of operation is as expected. In this work, 4H-SiC Schottky diode detectors were fabricated at OSU Nanotech West. After fabrication, these detectors were characterized using both I-V curves and Am-241 alpha-particle energy spectra. All measurements were made as a function of temperature, from room temperature up to 500°C. The average energy required to create an electron-hole pair was observed to decrease with an increase of temperature, due to a decrease of both the 4H-SiC bandgap and non-linear energy loss terms. Furthermore, the FWHM of the spectra was observed to be dependent on the leakage current at a certain temperature, and not dependent on the temperature itself. Secondly, the alpha particle energy spectrum in the pyroprocessing environment was modeled using SRIM. The molten salt was modeled in 3 different geometries, with or without a protective cover material on top of the detector. Due to the loss of alpha-particle energy in the molten salt itself, a high-energy alpha emitter may completely cover the spectrum from a lower-energy alpha emitter. Each of the

  5. Development of readout electronics for monolithic integration with diode strip detectors

    International Nuclear Information System (INIS)

    Hosticka, B.J.; Wrede, M.; Zimmer, G.; Kemmer, J.; Hofmann, R.; Lutz, G.

    1984-03-01

    Parallel in - serial out analog readout electronics integrated with silicon strip detectors will bring a reduction of two orders of magnitude in external electronics. The readout concept and the chosen CMOS technology solve the basic problem of low noise and low power requirements. A hybrid solution is an intermediate step towards the final goal of monolithic integration of detector and electronics. (orig.)

  6. Detector with internal gain for short-wave infrared ranging applications

    Science.gov (United States)

    Fathipour, Vala; Mohseni, Hooman

    2017-09-01

    Abstarct.Highly sensitive photon detectors are regarded as the key enabling elements in many applications. Due to the low photon energy at the short-wave infrared (SWIR), photon detection and imaging at this band are very challenging. As such, many efforts in photon detector research are directed toward improving the performance of the photon detectors operating in this wavelength range. To solve these problems, we have developed an electron-injection (EI) technique. The significance of this detection mechanism is that it can provide both high efficiency and high sensitivity at room temperature, a condition that is very difficult to achieve in conventional SWIR detectors. An EI detector offers an overall system-level sensitivity enhancement due to a feedback stabilized internal avalanche-free gain. Devices exhibit an excess noise of unity, operate in linear mode, require bias voltage of a few volts, and have a cutoff wavelength of 1700 nm. We review the material system, operating principle, and development of EI detectors. The shortcomings of the first-generation devices were addressed in the second-generation detectors. Measurement on second-generation devices showed a high-speed response of ˜6 ns rise time, low jitter of less than 20 ps, high amplification of more than 2000 (at optical power levels larger than a few nW), unity excess noise factor, and low leakage current (amplified dark current ˜10 nA at a bias voltage of -3 V and at room temperature. These characteristics make EI detectors a good candidate for high-resolution flash light detection and ranging (LiDAR) applications with millimeter scale depth resolution at longer ranges compared with conventional p-i-n diodes. Based on our experimentally measured device characteristics, we compare the performance of the EI detector with commercially available linear mode InGaAs avalanche photodiode (APD) as well as a p-i-n diode using a theoretical model. Flash LiDAR images obtained by our model show that the EI

  7. Quantification of lycopene in the processed tomato-based products by means of the light-emitting diode (LED) and compact photoacoustic (PA) detector

    NARCIS (Netherlands)

    Bicanic, D.D.; Skenderovic, H.; Markovic, K.; Doka, O.; Pichler, L.; Pichler, G.; Luterotti, S.

    2010-01-01

    The combined use of a high power light emitting diode (LED) and the compact photoacoustic (PA) detector offers the possibility for a rapid (no extraction needed), accurate (precision 1.5%) and inexpensive quantification of lycopene in different products derived from the thermally processed tomatoes.

  8. Real-time 2.5 Gbit/s ultra-wideband transmission using a Schottky diode-based envelope detector

    DEFF Research Database (Denmark)

    Rommel, Simon; Cimoli, Bruno; Valdecasa, Guillermo Silva

    2017-01-01

    An experimental demonstration of 2.5 Gbit/s real-time ultra-wideband transmission is presented, using a Schottky diode-based envelope detector fabricated ad-hoc using microstrip technology on a Rogers6002 substrate and surface-mount components. Real-time transmission with a BER below FEC threshold...

  9. Effect of doping on room temperature carrier escape mechanisms in InAs/GaAs quantum dot p-i-n junction photovoltaic cells

    Energy Technology Data Exchange (ETDEWEB)

    Sellers, D. G.; Chen, E. Y.; Doty, M. F. [Department of Materials Science and Engineering, University of Delaware, Newark, Delaware 19716 (United States); Polly, S. J.; Hubbard, S. M. [NanoPower Research Laboratory, Rochester Institute of Technology, Rochester, New York 14623 (United States)

    2016-05-21

    We investigate the effect of doping on the mechanisms of carrier escape from intermediate states in delta-doped InAs/GaAs intermediate band solar cells. The intermediate states arise from InAs quantum dots embedded in a GaAs p-i-n junction cell. We find that doping the sample increases the number of excited-state carriers participating in a cycle of trapping and carrier escape via thermal, optical, and tunneling mechanisms. However, we find that the efficiency of the optically-driven carrier escape mechanism is independent of doping and remains small.

  10. Silicon PIN diode based electron-gamma coincidence detector system for Noble Gases monitoring.

    Science.gov (United States)

    Khrustalev, K; Popov, V Yu; Popov, Yu S

    2017-08-01

    We present a new second generation SiPIN based electron-photon coincidence detector system developed by Lares Ltd. for use in the Noble Gas measurement systems of the International Monitoring System and the On-site Inspection verification regimes of the Comprehensive Nuclear-Test Ban Treaty (CTBT). The SiPIN provide superior energy resolution for electrons. Our work describes the improvements made in the second generation detector cells and the potential use of such detector systems for other applications such as In-Situ Kr-85 measurements for non-proliferation purposes. Copyright © 2017 Elsevier Ltd. All rights reserved.

  11. Fermi level splitting and thermionic current improvement in low-dimensional multi-quantum-well (MQW) p-i-n structures

    International Nuclear Information System (INIS)

    Varonides, Argyrios C.

    2006-01-01

    Photo-excitation and subsequent thermionic currents are essential components of photo-excited carrier transport in multi-quantum-well photovoltaic (hetero-PV) structures. p-i-n multi-quantum structures are useful probes for a better understanding of PV device properties. Illumination of the intrinsic region of p-i-n multi-structures causes carrier trapping in any of the quantum wells, and subsequent carrier recombination or thermal escape is possible. At the vicinity of a quantum well, we find that the (quasi) Fermi levels undergo an upward split by a small, but non-negligible, energy amount ΔE F in the order of 12 meV. We conclude this fact by comparing the photo-excited carriers trapped in a quantum well, under illumination, to the carrier concentrations under dark. Based on such a prediction, we subsequently relate thermionic current density dependence on Fermi level splitting, concluding that excess thermal currents may increase by a factor of the order of 2. We conclude that illumination causes (a) Fermi level separation and (b) an apparent increase in thermionic currents

  12. Influence of doped-charge transport layers on the photovoltaic performance of donor-acceptor blend p-i-n type organic solar cells

    Directory of Open Access Journals (Sweden)

    D. Gebeyehu

    2004-06-01

    Full Text Available This report demonstrates external power conversion efficiencies of 2% under 100 mW/cm2 simulated AM1.5 illumination for organic thin-film photovoltaic cells using a phthalocyanine-fullerene (ZnPc/C60 bulk heterojunction as an active layer, embedded into a p-i-n type architecture with doped wide-gap charge transport layers. For an optically optimized device, we found internal quantum efficiency (IQE of above 80% under short circuit conditions. Such optically thin cells with high internal quantum efficiency are an important step towards high efficiency tandem cells. The p-i-n architecture allows for the design of solar cells with high internal quantum efficiency where only the photoactive region absorbs visible light and recombination losses at contacts are avoided. The I-V characteristics, power conversion efficiencies, the dependence of short circuit current on incident white light intensity, incident photon to collected electron efficiency (IPCE and absorption spectra of the active layer system are discussed.

  13. Photovoltaic performance and stability of fullerene/cerium oxide double electron transport layer superior to single one in p-i-n perovskite solar cells

    Science.gov (United States)

    Xing, Zhou; Li, Shu-Hui; Wu, Bao-Shan; Wang, Xin; Wang, Lu-Yao; Wang, Tan; Liu, Hao-Ran; Zhang, Mei-Lin; Yun, Da-Qin; Deng, Lin-Long; Xie, Su-Yuan; Huang, Rong-Bin; Zheng, Lan-Sun

    2018-06-01

    Interface engineering that involves in the metal cathodes and the electron transport layers (ETLs) facilitates the simultaneous improvement of device performances and stability in perovskite solar cells (PSCs). Herein, low-temperature solution-processed cerium oxide (CeOx) films are prepared by a facile sol-gel method and employed as the interface layers between [6,6]-phenyl-C61-butyric acid methyl ester (PC61BM) and an Ag back contact to form PC61BM/CeOx double ETLs. The introduction of CeOx enables electron extraction to the Ag electrode and protects the underlying perovskite layer and thus improves the device performance and stability of the p-i-n PSCs. The p-i-n PSCs with double PC61BM/CeOx ETLs demonstrate a maximum power conversion efficiency (PCE) of 17.35%, which is superior to those of the devices with either PC61BM or CeOx single ETLs. Moreover, PC61BM/CeOx devices exhibit excellent stability in light soaking, which is mainly due to the chemically stable CeOx interlayer. The results indicate that CeOx is a promising interface modification layer for stable high-efficiency PSCs.

  14. Effect of a lithium ion drift on the characteristics of Si(Li) p-i-n-detectors of nuclear radiation

    Energy Technology Data Exchange (ETDEWEB)

    Azimov, S.A.; Iskanderov, A.Sh.; Muminov, R.A.; Khasanov, D.K.; Yafasov, A.Ya.

    1976-01-01

    An examination is made of the effect that temperature during drift has on the thickness of high-resistance layers and the specific resistance of the compensatory region. Diagrams are presented illustrating the relationship between the specific resistance of the compensatory region and temperature during drift, and the relationship between the relative thickness of high-resistance layers and temperature during drift. The optimal temperature during drift at which the thickness of the heterogenous layers is minimal and the compensation of the i-region is sufficient, was found to be 110 to 125/sup 0/C. 6 references, 2 figures.

  15. Applications of Liquid Chromatography with Fluorescence Detector Diodes and the Analysis of Environmental Pollutants; Aplicaciones de la Cromatografia Liquida con Detector de Diodos y Fluorescencia al Analisis de Contaminantes Medioambientales

    Energy Technology Data Exchange (ETDEWEB)

    Garcia, S; Perez, R M

    2012-04-11

    It presents a review on the determination of major types of organic pollutants in environmental samples by HPLC with diode array or fluorescence molecular detectors. Main objective has been to make a compilation of the analytical potential of the technique based on literature and our laboratory studies on the main aspects of analytical methodology used in the determination of these compounds. (Author) 53 refs.

  16. Miniature silicon diode matrix-detector for in vivo measurement of 133xenon disappearance in the canine myocardium following local tissue injection

    DEFF Research Database (Denmark)

    Svendsen, Jesper Hastrup; Rasmussen, H B; Damgaard, Y

    1992-01-01

    recording appearing from the gamma-energy of the photopeak. The detector matrix concept allows elimination of motion artefacts and indicator distribution in the myocardial tissue. Due to the uniformity and low cost of Si-diodes the perspective may be the introduction as a disposable transducer useful during......After local tissue depositioning of 133Xenon (133Xe) the regional washout is usually registered by a NaI(Tl) detector. The residual radioactivity of 133Xe is usually measured at its 81 keV photopeak. However, using small Silicon (Si) photodiodes it is feasible to measure only the low-energy...... activity in the X-ray energy range. In the myocardium of open chest dogs 133Xe washout measurements by a matrix of Si diodes composed in a 4 x 4 array and a conventional NaI(Tl) detector were carried out simultaneously. Fourteen separate pairs of measurements were performed in 3 dogs. When the Si...

  17. CsI/PIN Diode Detector Manufacture and Gamma-ray Response Measurement

    International Nuclear Information System (INIS)

    Ha, Jang Ho; Park, Se Hwan; Kang, Sang Mook; Kim, Yong Kyun; Lee, Wo Kyu

    2007-01-01

    In the nuclear industry changes fast to expand from conventional industry to newly emerging market industry. Such industries are environment and security field. Conventional devices to field-orientation application are too heavy not enough to be hand held. Especially emerging environment and security markets need a device which should be handheld and available long term battery operation. Photomultiplier based detection system could not satisfied these requirements. One of the promising system is the scintillator/PIN diode device. Present investigation is motivated for the purpose of developing a gamma-ray monitoring system with nuclei identification and small and light enough to be transportable by worker

  18. Spectrophotometric flow-injection analysis assay of tetracycline antibiotics using a dual light-emitting diode based detector

    Directory of Open Access Journals (Sweden)

    Prinya Masawat

    2008-02-01

    Full Text Available In this paper, a small dual light-emitting diode (LED-based detector for FIA process analyser has been designed. The detector’s optical parts comprise a flow-through cell, a dual-blue LED and a photodiode. Neither mirrors nor lenses are used. The optical path for the first LED detects the blank, while the other LED detects the sample. The detector’s electronic components including a signal amplifier and an A/D converter are integrated on one small board connected to a PC for measuring the results. The designed spectrophotometric detector was used for the determination of tetracycline antibiotics. Uranyl acetate was used as a reagent forming orange-red complexes with the drugs in N,N– dimethylformamide. The complexes show absorption maxima at 410, 416 and 408 nm for tetracycline hydrochloride (TCH, chlortetracycline hydrochloride (CTCH, and doxycycline hydrochloride (DCH, respectively. The detection limit was found to be 0.38, 0.75, 1.44 µg mL-1 and the linear range was obtained at 1.0-3.0, 3.0-5.0, and 3.0-10.0 µg mL-1 for TCH, CTCH and DCH, respectively. The proposed method has been successfully applied to the determination of tetracycline antibiotic residues in milk samples. Moreover, this method is an environmentally friendly approach and suitable for routine analysis.

  19. SiC Schottky Diode Detectors for Measurement of Actinide Concentrations from Alpha Activities in Molten Salt Electrolyte

    International Nuclear Information System (INIS)

    Windl, Wolfgang; Blue, Thomas

    2013-01-01

    In this project, we have designed a 4H-SiC Schottky diode detector device in order to monitor actinide concentrations in extreme environments, such as present in pyroprocessing of spent fuel. For the first time, we have demonstrated high temperature operation of such a device up to 500 °C in successfully detecting alpha particles. We have used Am-241 as an alpha source for our laboratory experiments. Along with the experiments, we have developed a multiscale model to study the phenomena controlling the device behavior and to be able to predict the device performance. Our multiscale model consists of ab initio modeling to understand defect energetics and their effect on electronic structure and carrier mobility in the material. Further, we have developed the basis for a damage evolution model incorporating the outputs from ab initio model in order to predict respective defect concentrations in the device material. Finally, a fully equipped TCAD-based device model has been developed to study the phenomena controlling the device behavior. Using this model, we have proven our concept that the detector is capable of performing alpha detection in a salt bath with the mixtures of actinides present in a pyroprocessing environment.

  20. SiC Schottky Diode Detectors for Measurement of Actinide Concentrations from Alpha Activities in Molten Salt Electrolyte

    Energy Technology Data Exchange (ETDEWEB)

    Windl, Wolfgang [The Ohio State Univ., Columbus, OH (United States); Blue, Thomas [The Ohio State Univ., Columbus, OH (United States)

    2013-01-28

    In this project, we have designed a 4H-SiC Schottky diode detector device in order to monitor actinide concentrations in extreme environments, such as present in pyroprocessing of spent fuel. For the first time, we have demonstrated high temperature operation of such a device up to 500 °C in successfully detecting alpha particles. We have used Am-241 as an alpha source for our laboratory experiments. Along with the experiments, we have developed a multiscale model to study the phenomena controlling the device behavior and to be able to predict the device performance. Our multiscale model consists of ab initio modeling to understand defect energetics and their effect on electronic structure and carrier mobility in the material. Further, we have developed the basis for a damage evolution model incorporating the outputs from ab initio model in order to predict respective defect concentrations in the device material. Finally, a fully equipped TCAD-based device model has been developed to study the phenomena controlling the device behavior. Using this model, we have proven our concept that the detector is capable of performing alpha detection in a salt bath with the mixtures of actinides present in a pyroprocessing environment.

  1. A Low-Noise X-ray Astronomical Silicon-On-Insulator Pixel Detector Using a Pinned Depleted Diode Structure.

    Science.gov (United States)

    Kamehama, Hiroki; Kawahito, Shoji; Shrestha, Sumeet; Nakanishi, Syunta; Yasutomi, Keita; Takeda, Ayaki; Tsuru, Takeshi Go; Arai, Yasuo

    2017-12-23

    This paper presents a novel full-depletion Si X-ray detector based on silicon-on-insulator pixel (SOIPIX) technology using a pinned depleted diode structure, named the SOIPIX-PDD. The SOIPIX-PDD greatly reduces stray capacitance at the charge sensing node, the dark current of the detector, and capacitive coupling between the sensing node and SOI circuits. These features of the SOIPIX-PDD lead to low read noise, resulting high X-ray energy resolution and stable operation of the pixel. The back-gate surface pinning structure using neutralized p-well at the back-gate surface and depleted n-well underneath the p-well for all the pixel area other than the charge sensing node is also essential for preventing hole injection from the p-well by making the potential barrier to hole, reducing dark current from the Si-SiO₂ interface and creating lateral drift field to gather signal electrons in the pixel area into the small charge sensing node. A prototype chip using 0.2 μm SOI technology shows very low readout noise of 11.0 e - rms , low dark current density of 56 pA/cm² at -35 °C and the energy resolution of 200 eV(FWHM) at 5.9 keV and 280 eV (FWHM) at 13.95 keV.

  2. Stability issues of high-energy resolution diode type CdTe nuclear radiation detectors in a long-term operation

    CERN Document Server

    Niraula, M; Aoki, T; Tomita, Y; Hatanaka, Y

    2002-01-01

    High-energy resolution diode type CdTe detectors were fabricated by growing an n-type epitaxial layer on high resistivity p-like crystal wafers, and their stability issues during a long-term operation were studied. Room temperature stability of the detectors was not good at low operating biases of around 200 V. However, it could be improved significantly by operating them at higher biases under full depletion conditions. On the other hand, detectors exhibited excellent stability by cooling them slightly below room temperature down to 0 deg. C. The effect of this low level of cooling on detector stability was found to be more significant than that of applying high biases at room temperature. By using the detector type presented here, stable operation could be obtained at moderate operating voltages of around 400 V and with a modest degree of cooling.

  3. An Ultra-Wideband Schottky Diode Based Envelope Detector for 2.5 Gbps signals

    DEFF Research Database (Denmark)

    Cimoli, Bruno; Valdecasa, Guillermo Silva; Granja, Angel Blanco

    2016-01-01

    to 2.5 Gbps at 6-9 GHz carrier frequency. The detector uses microstrip and surface-mount device (SMD) components and it is fabricated on a Rogers 6002 substrate. Experimental results show error free transmissions up to 2.5 Gbps at an input power level of -11 dBm. The highest measured conversion gain...

  4. An extended collection length model for the description of keV-electron induced degradation and thermal recovery of p-i-n solar cells

    International Nuclear Information System (INIS)

    Schneider, U.; Schroder, B.

    1990-01-01

    The results of keV-electron degradation and annealing experiments obtained on a-Si:H based p-i-n solar cells are interpretated under inclusion of models developed earlier for the degradation of a-Si:H films and are placed in the framework of an extended collection length model. The strong degradation of the cell parameters j sc and FF due to considerable keV-electron irradiation can be explained quantitatively. This enables a crucial test of the validity of the mathematical models for the keV-electron induced effects developed so far. Furthermore the results of a detailed investigation of the thermal recovery of electron-degraded solar cells can be cleared up consistently. Some unresolved issues are discussed, and experiments to resolve these questions are proposed

  5. Enhanced power conversion efficiency of p-i-n type organic solar cells by employing a p-layer of palladium phthalocyanine

    KAUST Repository

    Kim, Inho

    2010-11-15

    We demonstrate an enhancement in the power conversion efficiency (PCE) of p-i-n type organic solar cells consisting of zinc phthalocyanine (ZnPc) and fullerene (C60) using a p-layer of palladium phthalocyanine (PdPc). Solar cells employing three different device structures such as ZnPc/ZnPc:C60/C60, PdPc/PdPc:C60/C60, and PdPc/ZnPc:C60/C60 with varying thickness of mixed interlayers were fabricated by thermal evaporation. The mixed i-layers were deposited by co-evaporation of MPc (M=Zn,Pd) and C60 by 1:1 ratio. PCE of 3.7% was obtained for optimized cells consisting of PdPc/ZnPc:C60/C60, while cells with device structure of ZnPc/ZnPc:C60/C60 showed PCE of 3.2%.

  6. Improved efficiency of NiOx-based p-i-n perovskite solar cells by using PTEG-1 as electron transport layer

    Science.gov (United States)

    Groeneveld, Bart G. H. M.; Najafi, Mehrdad; Steensma, Bauke; Adjokatse, Sampson; Fang, Hong-Hua; Jahani, Fatemeh; Qiu, Li; ten Brink, Gert H.; Hummelen, Jan C.; Loi, Maria Antonietta

    2017-07-01

    We present efficient p-i-n type perovskite solar cells using NiOx as the hole transport layer and a fulleropyrrolidine with a triethylene glycol monoethyl ether side chain (PTEG-1) as electron transport layer. This electron transport layer leads to higher power conversion efficiencies compared to perovskite solar cells with PCBM (phenyl-C61-butyric acid methyl ester). The improved performance of PTEG-1 devices is attributed to the reduced trap-assisted recombination and improved charge extraction in these solar cells, as determined by light intensity dependence and photoluminescence measurements. Through optimization of the hole and electron transport layers, the power conversion efficiency of the NiOx/perovskite/PTEG-1 solar cells was increased up to 16.1%.

  7. 20 Gbps operation of membrane-based GaInAs/InP waveguide-type p-i-n photodiode bonded on Si substrate

    Science.gov (United States)

    Gu, Zhichen; Inoue, Daisuke; Amemiya, Tomohiro; Nishiyama, Nobuhiko; Arai, Shigehisa

    2018-02-01

    A GaInAs/InP waveguide-type p-i-n membrane photodetector is shown to be a strong candidate for on-chip optical interconnection. A responsivity of 0.95 A/W is estimated for a device length of 30 µm. The 3 dB cutoff frequency is measured to be 13.3 GHz at a reverse bias of 3 V, which is in good agreement with the observed clear eye opening pattern up to 20 Gbps for a non-return-to-zero signal. Moreover, a bit error rate of less than 1 × 10-9 is obtained at data rates of 20 and 10 Gbps with input powers of -10 and -13 dBm, respectively.

  8. Review of the hybrid photo diode tube (HPD) an advanced light detector for physics

    International Nuclear Information System (INIS)

    Anzivino, G.; Baillon, P.; Benetti, P.; Boskma, L.; Burger, P.; Contin, A.; DeSalvo, R.; Gorodetzky, P.; Grassi, D.; Hao, W.; He, H.; Liu, L.; Lundin, M.; Mondardini, M.R.; Paolucci, S.; Rossella, M.; Santiard, J.C.; Schomaker, R.; You, K.; Wang, K.; Wang, Y.; Xia, X.; Xu, C.; Yang, C.; Zhao, M.

    1995-01-01

    The HPD is a nonmultiplicative light detector with typical gain of 1000 to 5000. Its development project, mainly supported by the CERN LAA project and by the INFN group V, was originally intended to find a replacement for the photo multiplier (PM) tubes for scintillating fibre calorimeter readout. After five years of development the HPD has become a versatile light detector, commercially available for everyday use, that can outperform PM tubes in photon counting efficiency and resolution, multi tesla magnetic field operation, uniformity of response, fast pulse dynamic range, and gain stability. The HPD has also a wide edge on PMs on pixelization potential and it is getting more and more competitive on timing properties. A review of the HPD performances and its latest advances are reported. (orig.)

  9. Review of the hybrid photo diode tube (HPD) an advanced light detector for physics

    Energy Technology Data Exchange (ETDEWEB)

    Anzivino, G. [Istituto Nazionale di Fisica Nucleare, Frascati (Italy). Lab. Nazionale di Frascati; Arnaudon, H. [Universite` L. Pasteur, 4, rue B. Pascal, F-67000 Strasbourg (France); Baillon, P. [CERN, CH-1211 Geneva 23 (Switzerland); Benetti, P. [INFN Sezione di Pavia and Universita` di Pavia, via A. Bassi 6, I-27100 Pavia (Italy); Boskma, L. [DEP, P.O. box 60, NL-9300 AB Roden (Netherlands); Burger, P. [Canberra, Lammerdries 25, B-2250 Olen (Belgium); Contin, A. [CERN, CH-1211 Geneva 23 (Switzerland)]|[INFN Sezione di Bologna and Universita` di Bologna, via Irnerio 46, I-40126 Bologna (Italy); DeSalvo, R. [CERN, CH-1211 Geneva 23 (Switzerland); Gorodetzky, P. [CNRS, Strasbourg (France); Grassi, D. [INFN Sezione di Pavia and Universita` di Pavia, via A. Bassi 6, I-27100 Pavia (Italy); Hao, W. [IHEP, Beijing (China); He, H. [IHEP, Beijing (China); Liu, L. [IHEP, Beijing (China); Lundin, M. [Cornell University, Ithaca, NY 14853 (United States); Mondardini, M.R. [Cornell University, Ithaca, NY 14853 (United States); Paolucci, S. [INFN Sezione di Pavia and Universita` di Pavia, via A. Bassi 6, I-27100 Pavia (Italy); Rossella, M. [INFN Sezione di Pavia and Universita` di Pavia, via A. Bassi 6, I-27100 Pavia (Italy); Santiard, J.C. [CERN, CH-1211 Geneva 23 (Switzerland); Schomaker, R. [DEP, P.O. box 60, NL-9300 AB Roden (Netherlands); You, K. [IHEP, Beijing (China); Wang, K. [IHEP, Beijing (China); Wang, Y. [IHEP, Beijing (China); Xia, X. [IHEP, Beijing (China); Xu, C. [IHEP, Beijing (China); Yang, C. [IHEP, Beijing (China); Zhao, M. [IHEP, Beijing (China)

    1995-11-01

    The HPD is a nonmultiplicative light detector with typical gain of 1000 to 5000. Its development project, mainly supported by the CERN LAA project and by the INFN group V, was originally intended to find a replacement for the photo multiplier (PM) tubes for scintillating fibre calorimeter readout. After five years of development the HPD has become a versatile light detector, commercially available for everyday use, that can outperform PM tubes in photon counting efficiency and resolution, multi tesla magnetic field operation, uniformity of response, fast pulse dynamic range, and gain stability. The HPD has also a wide edge on PMs on pixelization potential and it is getting more and more competitive on timing properties. A review of the HPD performances and its latest advances are reported. (orig.).

  10. Simultaneous determination of bioactive constituents in Danggui Buxue Tang for quality control by HPLC coupled with a diode array detector, an evaporative light scattering detector and mass spectrometry.

    Science.gov (United States)

    Yi, Ling; Qi, Lian-Wen; Li, Ping; Ma, Yi-Han; Luo, Yong-Jing; Li, Hai-Yun

    2007-09-01

    Danggui Buxue Tang (DBT), a classical traditional Chinese formula comprising Radix Angelicae Sinensis (RAS) and Radix Astragali (RA), has been widely used to treat menopausal irregularity in Chinese women for nearly 800 years. In this study, a comprehensive analytical method of simultaneously determining the main types of bioactive constituents, eighteen in all from the formula, involving flavonoids, saponins, organic acid and some volatile compounds, was developed. This method was based on HPLC coupled to a diode array and evaporative light scattering detectors (HPLC-DAD-ELSD) on a common reverse-phase C(18) column. Liquid chromatography coupled with on-line electrospray ionization mass spectrometry (LC-ESI-MS) was also used to further validate and analyze the constituents. It was found that 0.3% aqueous formic acid and acetonitrile was the optimum mobile phase for gradient elution. This method, which showed good precision and accuracy, was successfully used to quantify the bioactive constituents in six products. As a result, the validated HPLC method, together with the LC-ESI-MS analysis, provided a new basis for assessing the quality of traditional Chinese medicinal compound preparations (TCMCPs) consisting of many bioactive components.

  11. Quantification of lycopene in the processed tomato-based products by means of the light-emitting diode (LED) and compact photoacoustic (PA) detector

    Science.gov (United States)

    Bicanic, D.; Skenderović, H.; Marković, K.; Dóka, O.; Pichler, L.; Pichler, G.; Luterotti, S.

    2010-03-01

    The combined use of a high power light emitting diode (LED) and the compact photoacoustic (PA) detector offers the possibility for a rapid (no extraction needed), accurate (precision 1.5%) and inexpensive quantification of lycopene in different products derived from the thermally processed tomatoes. The concentration of lycopene in selected products ranges from a few mg to several tens mg per 100 g fresh weight. The HPLC was used as the well established reference method.

  12. Quantification of lycopene in the processed tomato-based products by means of the light-emitting diode (LED) and compact photoacoustic (PA) detector

    International Nuclear Information System (INIS)

    Bicanic, D; Skenderovic, H; Pichler, L; Pichler, G; Markovic, K; Doka, O; Luterotti, S

    2010-01-01

    The combined use of a high power light emitting diode (LED) and the compact photoacoustic (PA) detector offers the possibility for a rapid (no extraction needed), accurate (precision 1.5%) and inexpensive quantification of lycopene in different products derived from the thermally processed tomatoes. The concentration of lycopene in selected products ranges from a few mg to several tens mg per 100 g fresh weight. The HPLC was used as the well established reference method.

  13. Simultaneous Determination of Six Food Additives in drinks by high performance liquid chromatography coupled to diode array detector detection

    International Nuclear Information System (INIS)

    Yan, Q.

    2013-01-01

    A reversed-phase high performance liquid chromatographic method for the successful separation and determination of 6 synthetic food additives (aspartame, acesulfame potassium, benzoic acid, sodium saccharin, tartrazine and sunset yellow) was developed. A EclipseXDB-C18 column (250x4.6 mm I.D.; 5 micro m) was used and the mobile phase contained methanol and 0.02 mol/L ammonium acetate (pH 6.0) (30:70, v/v) was pumped at a flow rate of 0.7 mL/min at room temperature. Successful separation conditions were obtained for all the compounds using an optimized gradient elution within 10 min. The diode array detector was used to monitor the food additives at 230 nm. The method was thoroughly validated, detection limits for all substances varied between 0.03 and 1.35 micro g/mg, the intra-day precision (as RSD) ranged from 1.57% to 4.72 %, the inter-day precision (as RSD) was between 2.05 % and 4.18 %. Satisfactory recoveries, ranging from 90.00 % to 109.87 %, were obtained. The proposed system was applied to drink samples. (author)

  14. Analytical Issues on the Determination of Carotenoids in Microalgae by Liquid Chromatography with Diode Array Detector; Aspectos Analiticos sobre la Determinacion de Compuestos Carotenoides en Microalgas mediante Cromatografia de Liquidos con Detector de Diodos

    Energy Technology Data Exchange (ETDEWEB)

    Garcia, S.; Perez, R. M.

    2012-04-11

    A preliminary study of literature review on the determination of carotenoids in microalgae samples by HPLC with diode array detector is presented. Main objective has been focused to compile data from literature and based on the main aspects of the analytical methodology used in the determination of these compounds. The work is structured as follows and affecting major analytical difficulties: Procurement and commercial availability of standard solutions. Stage of sample treatment. Chromatographic analysis. (Author) 19 refs.

  15. Analytic formalism for current crowding in light emitting diodes

    International Nuclear Information System (INIS)

    Lee, Kyu-Seok

    2012-01-01

    This paper presents an analytic approach to simulating current crowding (CC) in light-emitting diodes with parallel p- and n-contacts. The electrical potential difference across the p-i-n layers is derived from the Laplace equation, whereas the current density through the p-i-n layers is obtained from the current density - voltage relation of a single-diode model. Since these two properties influence each other, they are calculated iteratively. It is found that CC depends on the applied voltage (or the average current density), the sheet resistances of the p- and the n-contact layers, the width of the active region, and the specific series resistance and ideality factor of the p-i-n layers. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  16. Improvement in the performance of graphene nanoribbon p-i-n tunneling field effect transistors by applying lightly doped profile on drain region

    Science.gov (United States)

    Naderi, Ali

    2017-12-01

    In this paper, an efficient structure with lightly doped drain region is proposed for p-i-n graphene nanoribbon field effect transistors (LD-PIN-GNRFET). Self-consistent solution of Poisson and Schrödinger equation within Nonequilibrium Green’s function (NEGF) formalism has been employed to simulate the quantum transport of the devices. In proposed structure, source region is doped by constant doping density, channel is an intrinsic GNR, and drain region contains two parts with lightly and heavily doped doping distributions. The important challenge in tunneling devices is obtaining higher current ratio. Our simulations demonstrate that LD-PIN-GNRFET is a steep slope device which not only reduces the leakage current and current ratio but also enhances delay, power delay product, and cutoff frequency in comparison with conventional PIN GNRFETs with uniform distribution of impurity and with linear doping profile in drain region. Also, the device is able to operate in higher drain-source voltages due to the effectively reduced electric field at drain side. Briefly, the proposed structure can be considered as a more reliable device for low standby-power logic applications operating at higher voltages and upper cutoff frequencies.

  17. Effect of resonant tunneling on electroluminescence in nc-Si/SiO2 multilayers-based p-i-n structure

    International Nuclear Information System (INIS)

    Chen, D.Y.; Wang, Y.Y.; Sun, Y.; He, Y.J.; Zhang, G.

    2015-01-01

    P-i-n structures with SiO 2 /nc-Si/SiO 2 multilayers as intrinsic layer were prepared in conventional plasma enhanced chemical vapor deposition system. Their carrier transport and electroluminescence properties were investigated. Two resonant tunneling related current peaks with current dropping gradually under forward bias were observed in the current voltage curve. Non-uniformity of the interfaces might be responsible for the gradual dropping of the current. Electroluminescence intensity of the device under bias of 7 V which is near the resonant tunneling peak voltage of 7.2 V was weaker than that under 6.5 V. According to the Gaussian fitting results of the spectra, the intensity of the sub-peak of 650 nm originating from recombination of injected electrons and holes was decreased the most. When resonant tunneling conditions are met, it might be that most of the injected electrons participate in resonant tunneling and fewer in Pool–Frenkel tunneling, which is the main carrier transport mechanism, to contribute to electroluminescence intensity. - Highlights: • Two resonant tunneling peaks with current dropping gradually were observed. • The EL intensity of the structure under resonant tunneling peak voltage is weakened. • P–F tunneling is the main transport mechanism besides resonant tunneling

  18. Sn-based Ge/Ge{sub 0.975}Sn{sub 0.025}/Ge p-i-n photodetector operated with back-side illumination

    Energy Technology Data Exchange (ETDEWEB)

    Chang, C.; Li, H.; Huang, S. H.; Cheng, H. H., E-mail: hhcheng@ntu.edu.tw [Center for Condensed Matter Sciences and Graduate Institute of Electronics Engineering, National Taiwan University, Taipei 106, Taiwan (China); Sun, G.; Soref, R. A. [Department of Engineering, University of Massachusetts Boston, Boston, Massachusetts 02125 (United States)

    2016-04-11

    We report an investigation of a GeSn-based p-i-n photodetector grown on a Ge wafer that collects light signal from the back of the wafer. Temperature dependent absorption measurements performed over a wide temperature range (300 K down to 25 K) show that (a) absorption starts at the indirect bandgap of the active GeSn layer and continues up to the direct bandgap of the Ge wafer, and (b) the peak responsivity increases rapidly at first with decreasing temperature, then increases more slowly, followed by a decrease at the lower temperatures. The maximum responsivity happens at 125 K, which can easily be achieved with the use of liquid nitrogen. The temperature dependence of the photocurrent is analyzed by taking into consideration of the temperature dependence of the electron and hole mobility in the active layer, and the analysis result is in reasonable agreement with the data in the temperature regime where the rapid increase occurs. This investigation demonstrates the feasibility of a GeSn-based photodiode that can be operated with back-side illumination for applications in image sensing systems.

  19. Detection of 14 MeV neutrons in high temperature environment up to 500 deg. C using 4H-SiC based diode detector

    Energy Technology Data Exchange (ETDEWEB)

    Szalkai, D.; Klix, A. [KIT- Karlsruhe Institute of Technology, Institute of Neutron Physics and Reactor Technology Karlsruhe 76344 (Germany); Ferone, R.; Issa, F.; Ottaviani, L.; Vervisch, V. [IM2NP, UMR CNRS 7334, Aix-Marseille University, Case 231 -13397 Marseille Cedex 20 (France); Gehre, D. [Inst. for Nucl.- and Particle-Phys., Dresden University of Technology, Dresden 01069 (Germany); Lyoussi, A. [CEA, DEN, Departement d' Etudes des Reacteurs, Service de Physique Experimentale, Laboratoire Dosimetrie Capteurs Instrumentation, 13108 Saint-Paul-lez-Durance (France)

    2015-07-01

    In reactor technology and industrial applications detection of fast and thermal neutrons plays a crucial role in getting relevant information about the reactor environment and neutron yield. The inevitable elevated temperatures make neutron yield measurements problematic. Out of the currently available semiconductors 4H-SiC seems to be the most suitable neutron detector material under extreme conditions due to its high heat and radiation resistance, large band-gap and lower cost of production than in case of competing diamond detectors. In the framework of the European I-Smart project, optimal {sup 4}H-SiC diode geometries were developed for high temperature neutron detection and have been tested with 14 MeV fast neutrons supplied by a deuterium-tritium neutron generator with an average neutron flux of 10{sup 10}-10{sup 11} n/(s*cm{sup 2}) at Neutron Laboratory of the Technical University of Dresden in Germany from room temperatures up to several hundred degrees Celsius. Based on the results of the diode measurements, detector geometries appear to play a crucial role for high temperature measurements up to 500 deg. C. Experimental set-ups using SiC detectors were constructed to simulate operation in the harsh environmental conditions found in the tritium breeding blanket of the ITER fusion reactor, which is planned to be the location of neutron flux characterization measurements in the near future. (authors)

  20. A novel liquid chromatography method using diode-array detector for the determination of oleuropein in dietary supplements.

    Science.gov (United States)

    Bertolini, Tiziana; Vicentini, Lorenza; Boschetti, Silvia; Andreatta, Paolo; Gatti, Rita

    2016-09-10

    A simple and fast chromatographic method using ultraviolet diode-array detector (UV-DAD) was developed for the automatic high performance liquid chromatography (HPLC) determination of the title of oleuropein in a new dietary supplements in form of effervescent granules. The chromatographic separations were performed on a C18 core-shell column with detection at λ=232nm. The mobile phase consisted of deionized water with 0.1% TFA and acetonitrile under gradient conditions at a flow-rate of 0.8mL/min. Oleuropein and oleuroside present in the raw material were characterized by high performance liquid chromatography-electrospray ionization tandem mass spectrometry (HPLC-ESI-MS/MS). The validation of the analytical procedure has been performed determining the following parameters: specificity, linearity, repeatability, reproducibility, accuracy, limit of quantification (LOQ), stability of the standard and sample solutions. Linear response was observed in fortified placebo solutions (determination coefficient: 0.9998). Intra-day precision (relative standard deviation, RSD) was ≤5.0% for peak area and for retention times (tR) without significant differences between intra- and inter-day data. The limits of quantitation (LOQ) was about 5μg/mL and 9pmol/inject. Oleuropein recovery studies gave good results (99.9%) with a R.S.D. of 0.5%. The speed of analysis and the stability of the solutions with a fluctuation Δ (%) ≤2.0 at room temperature means an undoubted advantage of the method allowing the simultaneous preparation of many samples and consecutive chromatographic analyses by using an autosampler. The developed method is suitable for the quality control of oleuropein in raw material and industrial products. The method can be applied in any analytical laboratory not requiring a sophisticated instrumentation. Copyright © 2016 Elsevier B.V. All rights reserved.

  1. Optimal density assignment to 2D diode array detector for different dose calculation algorithms in patient specific VMAT QA

    International Nuclear Information System (INIS)

    Park, So Yeon; Park, Jong Min; Choi, Chang Heon; Chun, MinSoo; Han, Ji Hye; Cho, Jin Dong; Kim, Jung In

    2017-01-01

    The purpose of this study is to assign an appropriate density to virtual phantom for 2D diode array detector with different dose calculation algorithms to guarantee the accuracy of patient-specific QA. Ten VMAT plans with 6 MV photon beam and ten VMAT plans with 15 MV photon beam were selected retrospectively. The computed tomography (CT) images of MapCHECK2 with MapPHAN were acquired to design the virtual phantom images. For all plans, dose distributions were calculated for the virtual phantoms with four different materials by AAA and AXB algorithms. The four materials were polystyrene, 455 HU, Jursinic phantom, and PVC. Passing rates for several gamma criteria were calculated by comparing the measured dose distribution with calculated dose distributions of four materials. For validation of AXB modeling in clinic, the mean percentages of agreement in the cases of dose difference criteria of 1.0% and 2.0% for 6 MV were 97.2%±2.3%, and 99.4%±1.1%, respectively while those for 15 MV were 98.5%±0.85% and 99.8%±0.2%, respectively. In the case of 2%/2 mm, all mean passing rates were more than 96.0% and 97.2% for 6 MV and 15 MV, respectively, regardless of the virtual phantoms of different materials and dose calculation algorithms. The passing rates in all criteria slightly increased for AXB as well as AAA when using 455 HU rather than polystyrene. The virtual phantom which had a 455 HU values showed high passing rates for all gamma criteria. To guarantee the accuracy of patent-specific VMAT QA, each institution should fine-tune the mass density or HU values of this device

  2. Optimal density assignment to 2D diode array detector for different dose calculation algorithms in patient specific VMAT QA

    Energy Technology Data Exchange (ETDEWEB)

    Park, So Yeon; Park, Jong Min; Choi, Chang Heon; Chun, MinSoo; Han, Ji Hye; Cho, Jin Dong; Kim, Jung In [Dept. of Radiation Oncology, Seoul National University Hospital, Seoul (Korea, Republic of)

    2017-03-15

    The purpose of this study is to assign an appropriate density to virtual phantom for 2D diode array detector with different dose calculation algorithms to guarantee the accuracy of patient-specific QA. Ten VMAT plans with 6 MV photon beam and ten VMAT plans with 15 MV photon beam were selected retrospectively. The computed tomography (CT) images of MapCHECK2 with MapPHAN were acquired to design the virtual phantom images. For all plans, dose distributions were calculated for the virtual phantoms with four different materials by AAA and AXB algorithms. The four materials were polystyrene, 455 HU, Jursinic phantom, and PVC. Passing rates for several gamma criteria were calculated by comparing the measured dose distribution with calculated dose distributions of four materials. For validation of AXB modeling in clinic, the mean percentages of agreement in the cases of dose difference criteria of 1.0% and 2.0% for 6 MV were 97.2%±2.3%, and 99.4%±1.1%, respectively while those for 15 MV were 98.5%±0.85% and 99.8%±0.2%, respectively. In the case of 2%/2 mm, all mean passing rates were more than 96.0% and 97.2% for 6 MV and 15 MV, respectively, regardless of the virtual phantoms of different materials and dose calculation algorithms. The passing rates in all criteria slightly increased for AXB as well as AAA when using 455 HU rather than polystyrene. The virtual phantom which had a 455 HU values showed high passing rates for all gamma criteria. To guarantee the accuracy of patent-specific VMAT QA, each institution should fine-tune the mass density or HU values of this device.

  3. Quantification of maltol in Korean ginseng (Panax ginseng) products by high-performance liquid chromatography-diode array detector

    Science.gov (United States)

    Jeong, Hyun Cheol; Hong, Hee-Do; Kim, Young-Chan; Rhee, Young Kyoung; Choi, Sang Yoon; Kim, Kyung-Tack; Kim, Sung Soo; Lee, Young-Chul; Cho, Chang-Won

    2015-01-01

    Background: Maltol, as a type of phenolic compounds, is produced by the browning reaction during the high-temperature treatment of ginseng. Thus, maltol can be used as a marker for the quality control of various ginseng products manufactured by high-temperature treatment including red ginseng. For the quantification of maltol in Korean ginseng products, an effective high-performance liquid chromatography-diode array detector (HPLC-DAD) method was developed. Materials and Methods: The HPLC-DAD method for maltol quantification coupled with a liquid-liquid extraction (LLE) method was developed and validated in terms of linearity, precision, and accuracy. An HPLC separation was performed on a C18 column. Results: The LLE methods and HPLC running conditions for maltol quantification were optimized. The calibration curve of the maltol exhibited good linearity (R2 = 1.00). The limit of detection value of maltol was 0.26 μg/mL, and the limit of quantification value was 0.79 μg/mL. The relative standard deviations (RSDs) of the data of the intra- and inter-day experiments were <1.27% and 0.61%, respectively. The results of the recovery test were 101.35–101.75% with an RSD value of 0.21–1.65%. The developed method was applied successfully to quantify the maltol in three ginseng products manufactured by different methods. Conclusion: The results of validation demonstrated that the proposed HPLC-DAD method was useful for the quantification of maltol in various ginseng products. PMID:26246746

  4. Electrically modulated lateral photovoltage in μc-SiOx:H/a-Si:H/c-Si p-i-n structure at low temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Jihong; Qiao, Shuang, E-mail: sqiao@hbu.edu.cn; Wang, Jianglong; Wang, Shufang, E-mail: sfwang@hbu.edu.cn; Fu, Guangsheng

    2017-04-15

    Graphical abstract: In this paper, the temperature dependence of the LPE has been experimentally studied under illumination of different lasers ranging from visible to infrared for the μc-SiOx:H/a-Si:H/c-Si p-i-n structure. It was found that the position sensitivity increases nearly linearly with wavelength from 405 nm to 980 nm in the whole temperature range, and the saturated position sensitivity decreased quickly from 32.4 mV/mm to a very low value of 1.26 mV/mm and the nonlinearity improved from 7.01% to 3.54% with temperature decreasing from 296 K to 80 K for 532 nm laser illumination. By comparing the experiment results of μc-SiOx:H/a-Si:H/c-Si and ITO/c-Si, it is suggest that the position sensitivity was mainly determined by the temperature-dependent SB and the nonlinearity was directly related to the decreased resistivity of conductive layer. When an external bias voltage was applied, the LPE improved greatly and the position sensitivity of 361.35 mV/mm under illumination of 80 mW at 80 K is 286.7 times as large as that without biased voltage. More importantly, both the position sensitivity and the nonlinearity were independent of temperature again, which can be ascribed to the large constant transmission probability and diffusion length induced by the greatly increased SB. Our research provides an essential insight on the bias voltage-modulated LPE at different temperatures, and this temperature-independent greatly improved LPE is thought to be very useful for developing novel photoelectric devices. - Highlights: • The LPE is proportional to the laser wavelength in the whole temperature range. • The LPE decreases gradually with decreasing temperature from 296 K to 80 K. • Nonlinearity of the LPV curve improves a little with decreasing temperature. • The LPE improves dramatically and is independent of temperature with the aid of a bias voltage. - Abstract: The lateral photovoltaic effect (LPE) in μc-SiOx:H/a-Si:H/c-Si p-i-n structure is studied

  5. Amorphous silicon pixel radiation detectors and associated thin film transistor electronics readout

    International Nuclear Information System (INIS)

    Perez-Mendez, V.; Cho, G.; Drewery, J.; Jing, T.; Kaplan, S.N.; Mireshghi, A.; Wildermuth, D.; Goodman, C.; Fujieda, I.

    1992-07-01

    We describe the characteristics of thin (1 μm) and thick (> 30 μm) hydrogenated amorphous silicon p-i-n diodes which are optimized for detecting and recording the spatial distribution of charged particles, x-ray, γ rays and thermal neutrons. For x-ray, γ ray, and charged particle detection we can use thin p-i-n photosensitive diode arrays coupled to evaporated layers of suitable scintillators. For thermal neutron detection we use thin (2∼5 μm) gadolinium converters on 30 μm thick a-Si:H diodes. For direct detection of minimum ionizing particles and others with high resistance to radiation damage, we use the thick p-i-n diode arrays. Diode and amorphous silicon readouts as well as polysilicon pixel amplifiers are described

  6. Amorphous silicon pixel radiation detectors and associated thin film transistor electronics readout

    International Nuclear Information System (INIS)

    Perez-Mendez, V.; Drewery, J.; Hong, W.S.; Jing, T.; Kaplan, S.N.; Lee, H.; Mireshghi, A.

    1994-10-01

    We describe the characteristics of thin (1 μm) and thick (>30 μm) hydrogenated amorphous silicon p-i-n diodes which are optimized for detecting and recording the spatial distribution of charged particles, x-rays and γ rays. For x-ray, γ ray, and charged particle detection we can use thin p-i-n photosensitive diode arrays coupled to evaporated layers of suitable scintillators. For direct detection of charged particles with high resistance to radiation damage, we use the thick p-i-n diode arrays. Deposition techniques using helium dilution, which produce samples with low stress are described. Pixel arrays for flux exposures can be readout by transistor, single diode or two diode switches. Polysilicon charge sensitive pixel amplifiers for single event detection are described. Various applications in nuclear, particle physics, x-ray medical imaging, neutron crystallography, and radionuclide chromatography are discussed

  7. In-situ gallium-doping for forming p{sup +} germanium-tin and application in germanium-tin p-i-n photodetector

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Wei; Dong, Yuan; D' Costa, Vijay Richard; Yeo, Yee-Chia, E-mail: yeo@ieee.org [Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117576 (Singapore); Vajandar, Saumitra; Lim, Sin Leng; Osipowicz, Thomas; Tok, Eng Soon [Department of Physics and Yale-NUS College, National University of Singapore, Singapore 117551 (Singapore)

    2016-04-21

    The in-situ Ga doping technique was used to form heavily p-type doped germanium-tin (Ge{sub 1−x}Sn{sub x}) layers by molecular beam epitaxy, avoiding issues such as Sn precipitation and surface segregation at high annealing temperatures that are associated with the alternative implant and anneal approach. In this way, an electrically active Ga concentration of up to ∼3.2 × 10{sup 20 }cm{sup −3} can be realized for Ge{sub 1−x}Sn{sub x}. The impacts of varying the Ga concentration on the crystalline quality and the mobility of p-type Ge{sub 1−x}Sn{sub x} were investigated. High crystalline quality Ge{sub 0.915}Sn{sub 0.085} can be realized with an active Ga concentration of up to ∼1.2 × 10{sup 20 }cm{sup −3}. More than 98% of the Sn atoms are located on substitutional lattice sites, although the substitutionality of Sn in p-type Ge{sub 1−x}Sn{sub x} decreases with an increasing Ga concentration. When the Ga concentration introduced is higher than 3.2 × 10{sup 20 }cm{sup −3}, excess Ga atoms cannot be substitutionally incorporated, and segregation of Ga and Sn towards the surface during growth is observed. The in-situ Ga-doped Ge{sub 0.915}Sn{sub 0.085} epitaxy was integrated in a Ge{sub 0.915}Sn{sub 0.085}-on-Si p-i-n (PIN) photodiode fabrication process, and well-behaved Ge{sub 0.915}Sn{sub 0.085}/Si PIN junction characteristics were obtained. A large forward-bias current to reverse bias current ratio of 6 × 10{sup 4} and a low reverse current (dark current) of 0.24 μA were achieved at V{sub bias} = −1 V.

  8. The Fabrication and Characterization of Ni/4H-SiC Schottky Diode Radiation Detectors with a Sensitive Area of up to 4 cm².

    Science.gov (United States)

    Liu, Lin-Yue; Wang, Ling; Jin, Peng; Liu, Jin-Liang; Zhang, Xian-Peng; Chen, Liang; Zhang, Jiang-Fu; Ouyang, Xiao-Ping; Liu, Ao; Huang, Run-Hua; Bai, Song

    2017-10-13

    Silicon carbide (SiC) detectors of an Ni/4H-SiC Schottky diode structure and with sensitive areas of 1-4 cm² were fabricated using high-quality lightly doped epitaxial 4H-SiC material, and were tested in the detection of alpha particles and pulsed X-rays/UV-light. A linear energy response to alpha particles ranging from 5.157 to 5.805 MeV was obtained. The detectors were proved to have a low dark current, a good energy resolution, and a high neutron/gamma discrimination for pulsed radiation, showing the advantages in charged particle detection and neutron detection in high-temperature and high-radiation environments.

  9. The Fabrication and Characterization of Ni/4H-SiC Schottky Diode Radiation Detectors with a Sensitive Area of up to 4 cm2

    Directory of Open Access Journals (Sweden)

    Lin-Yue Liu

    2017-10-01

    Full Text Available Silicon carbide (SiC detectors of an Ni/4H-SiC Schottky diode structure and with sensitive areas of 1–4 cm2 were fabricated using high-quality lightly doped epitaxial 4H-SiC material, and were tested in the detection of alpha particles and pulsed X-rays/UV-light. A linear energy response to alpha particles ranging from 5.157 to 5.805 MeV was obtained. The detectors were proved to have a low dark current, a good energy resolution, and a high neutron/gamma discrimination for pulsed radiation, showing the advantages in charged particle detection and neutron detection in high-temperature and high-radiation environments.

  10. Improvement of thick a-Si radiation detectors by field profile tailoring

    International Nuclear Information System (INIS)

    Drewery, J.S.; Cho, G.; Jing, T.; Kaplan, S.N.; Mireshghi, A.; Perez-Mendez, V.; Wildermuth, D.

    1992-04-01

    Application of thick (∼50 μm) a-Si p-i-n diodes as a direct radiation detector for minimum ionizing particles is hampered by the need to apply large bias voltages in order fully to deplete the detecting intrinsic layer, which typically contains 5 - 10 x 10 14 ionizable dangling bonds per CM 3 . By insertion of thin p-type layers at intervals within the intrinsic layer, the required depletion voltage can be reduced by a factor of at least 1/(n+l) where n is the number of layers inserted. This principle is demonstrated for devices approximately 12μm in thickness. It is shown that electron losses within the p type layer can be kept to minimum by choice of a low doping concentration for the introduced players

  11. Properties of films and p-i-n photo-transformed structures on the basis of a-Si:H and its alloys, received in glow discharge of a constant current

    International Nuclear Information System (INIS)

    Tauasarov, K.

    1997-01-01

    The work devoted to investigation and control of structural, optical and photoelectric properties of films of amorphous hydrogenated silicon and its alloys, deposited in glow discharge of a constant current were done, creation of photo transformed p-i-n structures investigation its photoelectric characteristics. The main results and conclusions: A new method of deposition in glow discharge of a constant current qualitative doping and un doping a-Si:H layer and p-i-n structures on the basis of amorphous hydrogenated silicon was developed. For reception of amorphous p + and n - films for first time synthesised and applied mono-silborina and mono-silphosfin, containing pointed Si-B and Si-P linkages. New layered linear - organized structure in the films a-Si:H (T=200 deg C) was found out with distance between layers 7,5 A-o. Degree of crystallinity from combinational spectrum was determined. Concentration of films and connection between a hydrogen and silicon was determined from a IR-spectrum. It was shown that introduction of vary zone p + layer from a-Si x C 1-x :H into photo transformed p-i-n structure on the basis of a-Si:H results to decreasing of recombination losses in the area of p-i hetero boundary, and as result a photosensitive in the short-wave area of a spectrum increased. Best p-i-n structures in condition of natural illumination had following parameters: density of current of short circuit I sc =12,9 m A/cm 2 , voltage in single course U lm =0,85 V, factor of Ff.=0,55 filling and h=7% efficiency. (author)

  12. Optical sensing system based on wireless paired emitter detector diode device and ionogels for lab-on-a-disc water quality analysis.

    Science.gov (United States)

    Czugala, Monika; Gorkin, Robert; Phelan, Thomas; Gaughran, Jennifer; Curto, Vincenzo Fabio; Ducrée, Jens; Diamond, Dermot; Benito-Lopez, Fernando

    2012-12-07

    This work describes the first use of a wireless paired emitter detector diode device (PEDD) as an optical sensor for water quality monitoring in a lab-on-a-disc device. The microfluidic platform, based on an ionogel sensing area combined with a low-cost optical sensor, is applied for quantitative pH and qualitative turbidity monitoring of water samples at point-of-need. The autonomous capabilities of the PEDD system, combined with the portability and wireless communication of the full device, provide the flexibility needed for on-site water testing. Water samples from local fresh and brackish sources were successfully analysed using the device, showing very good correlation with standard bench-top systems.

  13. Analysis of Naturally Occurring Phenolic Compounds in Aromatic Plants by RP-HPLC Coupled to Diode Array Detector (DAD and GC-MS after Silylation

    Directory of Open Access Journals (Sweden)

    Charalampos Proestos

    2013-03-01

    Full Text Available The following aromatic plants of Greek origin, Origanum dictamnus (dictamus, Eucalyptus globulus (eucalyptus, Origanum vulgare L. (oregano, Mellisa officinalis L. (balm mint and Sideritis cretica (mountain tea, were examined for the content of phenolic substances. Reversed phase HPLC coupled to diode array detector (DAD was used for the analysis of the plant extracts. The gas chromatography-mass spectrometry method (GC-MS was also used for identification of phenolic compounds after silylation. The most abundant phenolic acids were: gallic acid (1.5–2.6 mg/100 g dry sample, ferulic acid (0.34–6.9 mg/100 g dry sample and caffeic acid (1.0–13.8 mg/100 g dry sample. (+-Catechin and (−-epicatechin were the main flavonoids identified in oregano and mountain tea. Quercetin was detected only in eucalyptus and mountain tea.

  14. SU-E-T-446: Evaluation of the Dosimetric Properties of a Diode Detector to Proton Radiosurgery

    Energy Technology Data Exchange (ETDEWEB)

    Teran, A [Loma Linda University Medical Center, Loma Linda, CA (United States); San Diego State University, San Diego, CA (United States); McAuley, G; Slater, J M [Loma Linda University, Loma Linda, CA (United States); Slater, J D; Wroe, A [Loma Linda University Medical Center, Loma Linda, CA (United States)

    2014-06-01

    Purpose: To test the PTW PR60020 proton dosimetry diode in radiation fields relevant to proton radiosurgery applications and evaluate its suitability as a high resolution, real time dosimetry device. Methods: Data was collected using our standard nominal radiosurgery energies of 126 MeV and 155 MeV through a single stage scattering system, corresponding to a range of 9.7 and 15 cm in water respectively. Various beam modulations were tested as part of this study. Depth dose and beam profile measurements were completed with the PTW PR60020 dosimetry diode with comparative measurements using a PTW Markus ionization chamber and EBT2 Gafchromic film. Monte Carlo simulations were also completed for comparison. Results: The single 1 mm{sup 2} by 20 μm thick sensitive volume allowed for high spatial resolution measurements while maintaining sufficient sensitive volume to ensure that measurements could be completed without excessive beam delivery. Depth dose profiles exhibited negligible LET dependence which typically impacts film and other solid state dosimetry devices, while beam ranges measured with the PTW diode were within 1 mm of ion chamber data. In an edge on arrangement beam profiles were also measured within 0.5 mm full-width at half-maximum at various depths as compared to film and simulation data. Conclusion: The PTW PR60020 proved to be a very useful radiation metrology apparatus for proton radiosurgery applications. Its waterproof and rugged construction allowed for easy deployment in phantoms or water tanks that are commonly used in proton radiosurgery QA. Dosimetrically, the diode exhibited negligible LET dependence as a function of depth, while in edge on arrangement to the incident proton beam it facilitated the measurement of beam profiles with a spatial resolution comparable to both Monte Carlo and film measurements. This project was sponsored in part by funding from the Department of Defense (DOD# W81XWH-BAA-10-1)

  15. The effect of incremental gamma-ray doses and incremental neutron fluences upon the performance of self-biased sup 1 sup 0 B-coated high-purity epitaxial GaAs thermal neutron detectors

    CERN Document Server

    Gersch, H K; Simpson, P A

    2002-01-01

    High-purity epitaxial GaAs sup 1 sup 0 B-coated thermal neutron detectors advantageously operate at room temperature without externally applied voltage. Sample detectors were systematically irradiated at fixed grid locations near the core of a 2 MW research reactor to determine their operational neutron dose threshold. Reactor pool locations were assigned so that fast and thermal neutron fluxes to the devices were similar. Neutron fluences ranged between 10 sup 1 sup 1 and 10 sup 1 sup 4 n/cm sup 2. GaAs detectors were exposed to exponential fluences of base ten. Ten detector designs were irradiated and studied, differentiated between p-i-n diodes and Schottky barrier diodes. The irradiated sup 1 sup 0 B-coated detectors were tested for neutron detection sensitivity in a thermalized neutron beam. Little damage was observed for detectors irradiated at neutron fluences of 10 sup 1 sup 2 n/cm sup 2 and below, but signals noticeably degraded at fluences of 10 sup 1 sup 3 n/cm sup 2. Catastrophic damage was appare...

  16. Development of analog solid-state photo-detectors for Positron Emission Tomography

    Energy Technology Data Exchange (ETDEWEB)

    Bisogni, Maria Giuseppina, E-mail: giuseppina.bisogni@pi.infn.it; Morrocchi, Matteo

    2016-02-11

    Solid-state photo-detectors are one of the main innovations of past century in the field of sensors. First produced in the early forties with the invention of the p–n junction in silicon and the study of its optical properties, photo-detectors received a major boost in the sixties when the p-i-n (PIN) photodiode was developed and successfully used in several applications. The development of devices with internal gain, avalanche photodiodes (APD) first and then Geiger-mode avalanche photodiodes, named single photon avalanche diode (SPAD), leads to a substantial improvement in sensitivity and allowed single photon detection. Later on, thousands of SPADs have been assembled in arrays of few millimeters squared (named SiPM, silicon photo-multiplier) with single photon resolution. The high internal gain of SiPMs, together with other features peculiar of the silicon technology like compactness, speed and compatibility with magnetic fields, promoted SiPMs as the principal photo-detector competitor of photomultipliers in many applications from radiation detection to medical imaging. This paper provides a review of the properties of analog solid-state photo-detectors. Particular emphasis is given to latest advances on Positron Emission Tomography instrumentation boosted by the adoption of the silicon photo-detectors as an alternative to photomultiplier tubes (PMTs). Special attention is dedicated to the SiPMs, which are playing a key role in the development of innovative scanners.

  17. Development of analog solid-state photo-detectors for Positron Emission Tomography

    International Nuclear Information System (INIS)

    Bisogni, Maria Giuseppina; Morrocchi, Matteo

    2016-01-01

    Solid-state photo-detectors are one of the main innovations of past century in the field of sensors. First produced in the early forties with the invention of the p–n junction in silicon and the study of its optical properties, photo-detectors received a major boost in the sixties when the p-i-n (PIN) photodiode was developed and successfully used in several applications. The development of devices with internal gain, avalanche photodiodes (APD) first and then Geiger-mode avalanche photodiodes, named single photon avalanche diode (SPAD), leads to a substantial improvement in sensitivity and allowed single photon detection. Later on, thousands of SPADs have been assembled in arrays of few millimeters squared (named SiPM, silicon photo-multiplier) with single photon resolution. The high internal gain of SiPMs, together with other features peculiar of the silicon technology like compactness, speed and compatibility with magnetic fields, promoted SiPMs as the principal photo-detector competitor of photomultipliers in many applications from radiation detection to medical imaging. This paper provides a review of the properties of analog solid-state photo-detectors. Particular emphasis is given to latest advances on Positron Emission Tomography instrumentation boosted by the adoption of the silicon photo-detectors as an alternative to photomultiplier tubes (PMTs). Special attention is dedicated to the SiPMs, which are playing a key role in the development of innovative scanners.

  18. Transient current changes induced in pin-diodes by nanosecond electron pulses

    International Nuclear Information System (INIS)

    Leonhardt, J.W.; Goldner, R.; Bos, J.; Mehnert, R.

    1984-01-01

    The electron pulse technique can be applied as a diagnostic method to measure charge carrier lifetimes, diffusion length or junction width in semiconductor p + -i-n + diodes. The described effect of the pulse length dependence on the electron energy might be of importance as an energy monitor for pulsed electron accelerators. (author)

  19. Modelling of current-voltage characteristics of infrared photo-detectors based on type – II InAs/GaSb super-lattice diodes with unipolar blocking layers

    Directory of Open Access Journals (Sweden)

    Vishnu Gopal

    2015-09-01

    Full Text Available It is shown that current-voltage characteristics of infrared photo-detectors based on type-II InAs/GaSb super-lattices with uni-polar blocking layers can be modelled similar to a junction diode with a finite series resistance on account of blocking barriers. As an example this paper presents the results of a study of current-voltage characteristics of a type II InAs/GaSb super-lattice diode with PbIbN architecture using a recently proposed [J. Appl. Phys. 116, 084502 (2014] method for modelling of illuminated photovoltaic detectors. The thermal diffusion, generation – recombination (g-r, and ohmic currents are found as principal components besides a component of photocurrent due to background illumination. The experimentally observed reverse bias diode current in excess of thermal current (diffusion + g-r, photo-current and ohmic shunt current is reported to be best described by an exponential function of the type, Iexcess = Ir0 + K1exp(K2 V, where Ir0, K1 and K2 are fitting parameters and V is the applied bias voltage. The present investigations suggest that the exponential growth of excess current with the applied bias voltage may be taking place along the localized regions in the diode. These localized regions are the shunt resistance paths on account of the surface leakage currents and/or defects and dislocations in the base of the diode.

  20. Single-laboratory validation of a high-performance liquid chromatographic-diode array detector-fluorescence detector/mass spectrometric method for simultaneous determination of water-soluble vitamins in multivitamin dietary tablets.

    Science.gov (United States)

    Chen, Pei; Atkinson, Renata; Wolf, Wayne R

    2009-01-01

    The purpose of this study was to develop a single-laboratory validated (SLV) method using high-performance liquid chromatography with different detectors [diode array detector (DAD); fluorescence detector (FLD); and mass spectrometry (MS)] for determination of 7 B-complex vitamins (B1-thiamin, B2-riboflavin, B3-nicotinamide, B6-pyridoxine, B9-folic acid, pantothenic acid, and biotin) and vitamin C in multivitamin/multimineral dietary supplements. The method involves the use of a reversed-phase octadecylsilyl column (4 microm, 250 x 2.0 mm id) and a gradient mobile phase profile. Gradient elution was performed at a flow rate of 0.25 mL/min. After a 5 min isocratic elution at 100% A (0.1% formic acid in water), a linear gradient to 50% A and 50% B (0.1% formic acid in acetonitrile) at 15 min was employed. Detection was performed with a DAD as well as either an FLD or a triple-quadrupole MS detector in the multiple reaction monitoring mode. SLV was performed using Standard Reference Material (SRM) 3280 Multivitamin/Multimineral Tablets, being developed by the National Institute of Standards and Technology, with support by the Office of Dietary Supplements of the National Institutes of Health. Phosphate buffer (10 mM, pH 2.0) extracts of the NIST SRM 3280 were analyzed by the liquid chromatographic (LC)-DAD-FLDIMS method. Following extraction, the method does not require any sample cleanup/preconcentration steps except centrifugation and filtration.

  1. A Planar, Chip-Based, Dual-Beam Refractometer Using an Integrated Organic Light Emitting Diode (OLED) Light Source and Organic Photovoltaic (OPV) Detectors

    Science.gov (United States)

    Ratcliff, Erin L.; Veneman, P. Alex; Simmonds, Adam; Zacher, Brian; Huebner, Daniel

    2010-01-01

    We present a simple chip-based refractometer with a central organic light emitting diode (OLED) light source and two opposed organic photovoltaic (OPV) detectors on an internal reflection element (IRE) substrate, creating a true dual-beam sensor platform. For first-generation platforms, we demonstrate the use of a single heterojunction OLED based on electroluminescence emission from an Alq3/TPD heterojunction (tris-(8-hydroxyquinoline)aluminum/N,N′-Bis(3-methylphenyl)-N,N′-diphenylbenzidine) and light detection with planar heterojunction pentacene/C60 OPVs. The sensor utilizes the considerable fraction of emitted light from conventional thin film OLEDs that is coupled into guided modes in the IRE instead of into the forward (display) direction. A ray-optics description is used to describe light throughput and efficiency-limiting factors for light coupling from the OLED into the substrate modes, light traversing through the IRE substrate, and light coupling into the OPV detectors. The arrangement of the OLED at the center of the chip provides for two sensing regions, a “sample” and “reference” channel, with detection of light by independent OPV detectors. This configuration allows for normalization of the sensor response against fluctuations in OLED light output, stability, and local fluctuations (temperature) which might influence sensor response. The dual beam configuration permits significantly enhanced sensitivity to refractive index changes relative to single-beam protocols, and is easily integrated into a field-portable instrumentation package. Changes in refractive index (ΔR.I.) between 10−2 and 10−3 R.I. units could be detected for single channel operation, with sensitivity increased to ΔR.I. ≈ 10−4 units when the dual beam configuration is employed. PMID:20218580

  2. Fabrication study of GaAs mesa diodes for X-ray detection

    OpenAIRE

    Ng, J.S.; Meng, X.; Lees, J.E.; Barnett, A.; Tan, C.H.

    2014-01-01

    A study of leakage currents using GaAs mesa p-i-n diodes for X-ray photon counting is presented. Different wet chemical etching solution and etch depth were used in the fabrication of these mesa diodes. Low and uniform leakage currents were achieved when the diode fabrication used (i) a combination of main etching solution and finishing etching solution for the etching, and (ii) partially etched mesas. The diodes fabricated using these methods showed well-defined X-ray peaks when illuminated ...

  3. Determination of Carotenoids in Human Serum and Breast Milk Using High Performance Liquid Chromatography Coupled with a Diode Array Detector (HPLC-DAD

    Directory of Open Access Journals (Sweden)

    Jing Tan

    2017-05-01

    Full Text Available High performance liquid chromatography (HPLC coupled with a diode array detector (HPLC-DAD for the identification and quantification of carotenoids, namely all-trans lutein, zeaxanthin, β-cryptoxanthin, α-carotene, and β-carotene, in biological samples such as human serum and breast milk, has been developed and validated. Good chromatography separation was achieved using a binary mobile phase system on a YMC C30 column (150 × 2.1 mm, 3 µm at 30 °C. Owing to the smaller column particle size and diameter of the column, the separation was achieved in 18 min, which is significantly reduced from the typical 30–40 min of other methods. The diode array detector (DAD acquisition was set at a wavelength of 445 nm; 3D spectra ranging from wavelengths of 240–600 nm were also recorded. Peaks were identified by matching their retention time and spectra with those of standards. Quantification was achieved by internal standard calibration using echinenone as the internal standard. Good linearity was obtained for each compound (R2 > 0.9999. The method quantification limits (MQLs for serum and breast milk were 10 ng/mL and 5 ng/mL, in matrix, respectively. A spike recovery study and standard reference material (SRM from the National Institute of Standards and Technology (NIST 968e analysis has proven that the method has a high degree of accuracy, precision, and robustness. The stability study showed that the carotenoid standard and sample extracts could be stored in a chilled autosampler at 8 °C up to 48 h without being comprised, which provides guidance on re-test time frames. The freeze/thaw process was found to be detrimental to carotenoids, and should always be avoided. Most importantly, UV standardization of the stock standard is to be performed prior to each assay, and simply taking the values on Certificate of Analysis (CoA for calculation of the standard concentration is not recommended.

  4. Monte Carlo simulated corrections for beam commissioning measurements with circular and MLC shaped fields on the CyberKnife M6 System: a study including diode, microchamber, point scintillator, and synthetic microdiamond detectors

    Science.gov (United States)

    Francescon, P.; Kilby, W.; Noll, J. M.; Masi, L.; Satariano, N.; Russo, S.

    2017-02-01

    Monte Carlo simulation was used to calculate correction factors for output factor (OF), percentage depth-dose (PDD), and off-axis ratio (OAR) measurements with the CyberKnife M6 System. These include the first such data for the InCise MLC. Simulated detectors include diodes, air-filled microchambers, a synthetic microdiamond detector, and point scintillator. Individual perturbation factors were also evaluated. OF corrections show similar trends to previous studies. With a 5 mm fixed collimator the diode correction to convert a measured OF to the corresponding point dose ratio varies between  -6.1% and  -3.5% for the diode models evaluated, while in a 7.6 mm  ×  7.7 mm MLC field these are  -4.5% to  -1.8%. The corresponding microchamber corrections are  +9.9% to  +10.7% and  +3.5% to  +4.0%. The microdiamond corrections have a maximum of  -1.4% for the 7.5 mm and 10 mm collimators. The scintillator corrections are  15%, reducing to    d max were  M6 Systems and retrospectively checking estimated corrections used previously. We recommend the PDD and OAR corrections are used to guide detector selection and inform the evaluation of results rather than to explicitly correct measurements.

  5. Spectral Light Measurements in Microbenthic Phototrophic Communities with a Fiberoptic Microprobe Coupled to a Sensitive Diode-Array Detector Rid A-1977-2009

    DEFF Research Database (Denmark)

    KUHL, M.; JØRGENSEN, BB

    1992-01-01

    with microelectrode measurements of oxygenic photosynthesis in the coastal sediment. With an incident light intensity of 200 muEinst m-2 s-1, photon scalar irradiance reached a maximum of 283 muEinst m-2 s-1 at the sediment surface. The lower boundary of the euphotic zone was 2.2 mm below the surface at a light......A diode array detector system for microscale light measurements with fiber-optic microprobes was developed; it measures intensities of 400-900-nm light over >6 orders of magnitude with a spectral resolution of 2-5 nm. Fiber-optic microprobes to measure field radiance or scalar irradiance were...... extinction maxima in measured radiance spectra at 430-550 nm (Chl a and carotenoids), 620-625 nm (phycocyanin), 675 nm (Chl a), 745-750 nm (BChl c), 800-810 nm, and 860-880 nm (BChl a). Scalar irradiance spectra exhibited a different spectral composition and a higher light intensity at the sediment surface...

  6. Evaluation of Drying Process on the Composition of Black Pepper Ethanolic Extract by High Performance Liquid Chromatography With Diode Array Detector

    Science.gov (United States)

    Namjoyan, Foroogh; Hejazi, Hoda; Ramezani, Zahra

    2012-01-01

    Background Black pepper (Piper nigrum) is one of the well-known spices extensively used worldwide especially in India, and Southeast Asia. The presence of alkaloids in the pepper, namely, piperine and its three stereoisomers, isopiperine, chavicine and isochavicine are well noticed. Objectives The current study evaluated the effect of lyophilization and oven drying on the stability and decomposition of constituents of black pepper ethanolic extract. Materials and Methods In the current study ethanolic extract of black pepper obtained by maceration method was dried using two methods. The effect of freeze and oven drying on the chemical composition of the extract especially piperine and its three isomers were evaluated by HPLC analysis of the ethanolic extract before and after drying processes using diode array detector. The UV Vis spectra of the peaks at piperine retention time before and after each drying methods indicated maximum absorbance at 341.2 nm corresponding to standard piperine. Results The results indicated a decrease in intensity of the chromatogram peaks at approximately all retention times after freeze drying, indicating a few percent loss of piperine and its isomers upon lyophilization. Two impurity peaks were completely removed from the extract. Conclusions In oven dried samples two of the piperine stereoisomers were completely removed from the extract and the intensity of piperine peak was increased. PMID:24624176

  7. Simultaneous determination three phytosterol compounds, campesterol, stigmasterol and daucosterol in Artemisia apiacea by high performance liquid chromatography-diode array ultraviolet/visible detector

    Science.gov (United States)

    Lee, Jiwoo; Weon, Jin Bae; Yun, Bo-Ra; Eom, Min Rye; Ma, Choong Je

    2015-01-01

    Background: Artemisia apiacea is a traditional herbal medicine using treatment of eczema and jaundice in Eastern Asia, including China, Korea, and Japan. Objective: An accurate and sensitive analysis method using high performance liquid chromatography-diode array ultraviolet/visible detector and liquid chromatography–mass spectrometry for the simultaneous determination of three phytosterol compounds, campesterol, stigmasterol and daucosterol in A. apiacea was established. Materials and Methods: The analytes were separated on a Shiseido C18 column (5 μm, 4.6 mm I.D. ×250 mm) with gradient elution of 0.1% trifluoroacetic acid and acetonitrile. The flow rate was 1 mL/min and detection wavelengths were set at 205 and 254 nm. Results: Validation of the method was performed to demonstrate its linearity, precision and accuracy. The calibration curves showed good linearity (R2 > 0.9994). The limits of detection and limits of quantification were within the ranges 0.55–7.07 μg/mL and 1.67–21.44 μg/mL, respectively. And, the relative standard deviations of intra- and inter-day precision were <2.93%. The recoveries were found to be in the range of 90.03–104.91%. Conclusion: The developed method has been successfully applied to the analysis for quality control of campesterol, stigmasterol and daucosterol in A. apiacea. PMID:25829768

  8. Quality evaluation of mycelial Antrodia camphorata using high-performance liquid chromatography (HPLC coupled with diode array detector and mass spectrometry (DAD-MS

    Directory of Open Access Journals (Sweden)

    Leung Kelvin

    2010-01-01

    Full Text Available Abstract Background Antrodia camphorata (AC is an important fungus native to Taiwanese forested regions. Scientific studies have demonstrated that extracts of AC possess a variety of pharmacological functions. This study aims to identify the full profile fingerprint of nucleosides and nucleobases in mycelial AC and to assess the quality of two commercial mycelial AC products. Methods High-performance liquid chromatography coupled with diode array detector and mass spectrometry was employed to identify the major components in mycelial AC. The chemical separation was carried out using a gradient program on a reverse phase Alltima C18 AQ analytical column (250 × 4.6 mm, 5 μm with the mobile phase consisting of deionized water and methanol. Results Ten nucleosides and nucleobases, two maleimide derivatives, and a sterol were identified as the major constituents in mycelial AC. These groups of chemical compounds constitute the first chromatographic fingerprint as an index for quality assessment of this medicinal fungus. Conclusions This study provides the first chromatographic fingerprint to assess the quality of mycelial AC.

  9. Development and validation of carbofuran and 3-hydroxycarbofuran analysis by high-pressure liquid chromatography with diode array detector (HPLC-DAD) for forensic Veterinary Medicine.

    Science.gov (United States)

    Gonçalves, Vagner; Hazarbassanov, Nicolle Queiroz; de Siqueira, Adriana; Florio, Jorge Camilo; Ciscato, Claudia Helena Pastor; Maiorka, Paulo Cesar; Fukushima, André Rinaldi; de Souza Spinosa, Helenice

    2017-10-15

    Agricultural pesticides used with the criminal intent to intoxicate domestic and wild animals are a serious concern in Veterinary Medicine. In order to identify the pesticide carbofuran and its metabolite 3- hydroxycarbofuran in animals suspected of exogenous intoxication a high pressure liquid chromatography with diode array detector (HPLC-DAD) method was developed and validated in stomach contents, liver, vitreous humor and blood. The method was evaluated using biological samples from seven different animal species. The following parameters of analytical validation were evaluated: linearity, precision, accuracy, selectivity, recovery and matrix effect. The method was linear at the range of 6.25-100μg/mL and the correlation coefficient (r 2 ) values were >0.9811 for all matrices. The precision and accuracy of the method was determined by coefficient of variation (CV) and the relative standard deviation error (RSE), and both were less than 15%. Recovery ranged from 74.29 to 100.1% for carbofuran and from 64.72 to 100.61% for 3-hydroxycarbofuran. There were no significant interfering peaks or matrix effects. This method was suitable for detecting 25 positive cases for carbofuran amongst a total of 64 animal samples suspected of poisoning brought to the Toxicology Diagnostic Laboratory, School of Veterinary Medicine and Animal Sciences, University of Sao Paulo. Copyright © 2017 Elsevier B.V. All rights reserved.

  10. Simultaneous quantification of coumarins, flavonoids and limonoids in Fructus Citri Sarcodactylis by high performance liquid chromatography coupled with diode array detector.

    Science.gov (United States)

    Chu, Jun; Li, Song-Lin; Yin, Zhi-Qi; Ye, Wen-Cai; Zhang, Qing-Wen

    2012-07-01

    A high performance liquid chromatography coupled with diode array detector (HPLC-DAD) method was developed for simultaneous quantification of eleven major bioactive components including six coumarins, three flavonoids and two limonoids in Fructus Citri Sarcodactylis. The analysis was performed on a Cosmosil 5 C(18)-MS-II column (4.6 mm × 250 mm, 5 μm) with water-acetonitrile gradient elution. The method was validated in terms of linearity, sensitivity, precision, stability and accuracy. It was found that the calibration curves for all analytes showed good linearity (R(2)>0.9993) within the test ranges. The overall limit of detection (LOD) and limit of quantification (LOQ) were less than 3.0 and 10.2 ng. The relative standard deviations (RSDs) for intra- and inter-day repeatability were not more than 4.99% and 4.92%, respectively. The sample was stable for at least 48 h. The spike recoveries of eleven components were 95.1-104.9%. The established method was successfully applied to determine eleven components in three samples from different locations. The results showed that the newly developed HPLC-DAD method was linear, sensitive, precise and accurate, and could be used for quality control of Fructus Citri Sarcodactylis. Copyright © 2012 Elsevier B.V. All rights reserved.

  11. Online extraction-high performance liquid chromatography-diode array detector-quadrupole time-of-flight tandem mass spectrometry for rapid flavonoid profiling of Fructus aurantii immaturus.

    Science.gov (United States)

    Tong, Runna; Peng, Mijun; Tong, Chaoying; Guo, Keke; Shi, Shuyun

    2018-03-01

    Chemical profiling of natural products by high performance liquid chromatography (HPLC) was critical for understanding of their clinical bioactivities, and sample pretreatment steps have been considered as a bottleneck for analysis. Currently, concerted efforts have been made to develop sample pretreatment methods with high efficiency, low solvent and time consumptions. Here, a simple and efficient online extraction (OLE) strategy coupled with HPLC-diode array detector-quadrupole time-of-flight tandem mass spectrometry (HPLC-DAD-QTOF-MS/MS) was developed for rapid chemical profiling. For OLE strategy, guard column inserted with ground sample (2 mg) instead of sample loop was connected with manual injection valve, in which components were directly extracted and transferred to HPLC-DAD-QTOF-MS/MS system only by mobile phase without any extra time, solvent, instrument and operation. By comparison with offline heat-reflux extraction for Fructus aurantii immaturus (Zhishi), OLE strategy presented higher extraction efficiency perhaps because of the high pressure and gradient elution mode. A total of eighteen flavonoids were detected according to their retention times, UV spectra, exact mass, and fragmentation ions in MS/MS spectra, and compound 9, natsudaidain-3-O-glucoside, was discovered in Zhishi for the first time. It is concluded that the developed OLE-HPLC-DAD-QTOF-MS/MS system offers new perspectives for rapid chemical profiling of natural products. Copyright © 2018. Published by Elsevier B.V.

  12. Charge-sensitive and shaping amplifier microassemblies for dosimetry and spectrometry on CZT-detectors

    International Nuclear Information System (INIS)

    Perevertaylo, V.L.; Zaitsevsky, I.L.; Tarasenko, L.I.; Perevertaylo, A.V.; Shkirenko, E.A.

    2012-01-01

    Developments of new spectrometric channel electronics on the basis of microassemblies, which allowed to reduce the noise and increase of signal-to-noise ratio, lowering power consumption and dimensions. The complete line of front-end electronics for CZT detectors implemented as micro-assemblies is described, the design concept, operation details and application features of charge sensitive amplifier and shaping amplifier microassemblies are discussed, and the results obtained when registering low energy X-ray spectra are shown. It has a high energy resolution δE at the level of the leading companies. For direct detection with silicon p-i-n-diode new electronic channel can resolve 241 Am peaks up to 8 keV with a resolution of about 2 keV at room temperature. New electronics is universal and can be used with different semiconductor detectors - Si, CdZnTe, Scintillator-photodiode, as shown in the spectra. Low power consumption and reduced dimensions allows the using in portable equipment. Manufacturability of micro assembly opens up the possibility for mass production and low cost opens up the possibility to supply them with detectors as S tart kit f or the construction of radiometric and spectrometric devices

  13. A gas ionisation Direct-STIM detector for MeV ion microscopy

    International Nuclear Information System (INIS)

    Norarat, Rattanaporn; Guibert, Edouard; Jeanneret, Patrick; Dellea, Mario; Jenni, Josef; Roux, Adrien; Stoppini, Luc; Whitlow, Harry J.

    2015-01-01

    Direct-Scanning Transmission Ion Microscopy (Direct-STIM) is a powerful technique that yields structural information in sub-cellular whole cell imaging. Usually, a Si p-i-n diode is used in Direct-STIM measurements as a detector. In order to overcome the detrimental effects of radiation damage which appears as a broadening in the energy resolution, we have developed a gas ionisation detector for use with a focused ion beam. The design is based on the ETH Frisch grid-less off-axis Geiger–Müller geometry. It is developed for use in a MeV ion microscope with a standard Oxford Microbeams triplet lens and scanning system. The design has a large available solid angle for other detectors (e.g. proton induced fluorescence). Here we report the performance for imaging ReNcells VM with μm resolution where energy resolutions of <24 keV fwhm could be achieved for 1 MeV protons using isobutane gas

  14. Simultaneous separation of antihyperlipidemic drugs by green ultrahigh-performance liquid chromatography-diode array detector method: Improving the health of liquid chromatography.

    Science.gov (United States)

    Alghazi, Mansoor; Alanazi, Fars; Mohsin, Kazi; Siddiqui, Nasir Ali; Shakeel, Faiyaz; Haq, Nazrul

    2017-04-01

    Statins in combination with fibrates show beneficial effects on the lipoprotein profile of patients because they have positive complimentary effects on lipid profile. A new green ultrahigh-performance liquid chromatography-diode array detector method for simultaneous analysis of simvastatin (SMV) and fenofibrate (FNF) in standard form, marketed formulations, and self-emulsifying drug delivery system formulations was developed and validated in the present investigation. The method utilized C 18 as stationary phase and a combination of methanol:water (8:2) as an eluent. It was found that selected eluent provided short run time (2.5 minutes), better peak symmetry and satisfactory values of other chromatographic parameters such as resolution (Rs=2.325), capacity factor (k, 3.0 and 4.2 for SMV and FNF, respectively), selectivity (α =1.4), and number of theoretical plates (N, 4265 and 5285 for SMV and FNF, respectively). An excellent linear relationship (r 2 0.998 and 0.997 for SMV and FNF, respectively) was observed for linear regression data for the calibration plots. The developed system was validated for accuracy, precision, robustness (˃ 2% for both drugs) and recovery (98-102% for both drugs). Results obtained from the statistical treatment of the values obtained for different parameters proved that the method is suitable, reproducible, and selective for the simultaneous analysis of SMV and FNF in bulk, marketed, and self-emulsifying drug delivery system formulations. The replacement of commonly applied toxic solvents with innocuous and environmentally benign solvents provides a better option than the more toxic processes in drug analysis. Copyright © 2016. Published by Elsevier B.V.

  15. Development and validation of an high-performance liquid chromatography-diode array detector method for the simultaneous determination of six phenolic compounds in abnormal savda munziq decoction

    Science.gov (United States)

    Tian, Shuge; Liu, Wenxian; Liu, Feng; Zhang, Xuejia; Upur, Halmuart

    2015-01-01

    Aims: Given the high-effectiveness and low-toxicity of abnormal savda munziq (ASMQ), its herbal formulation has long been used in traditional Uyghur medicine to treat complex diseases, such as cancer, diabetes, and cardiovascular diseases. Settings and Design: ASMQ decoction by reversed-phase high-performance liquid chromatography coupled with a diode array detector was successfully developed for the simultaneous quality assessment of gallic acid, protocatechuic acid, caffeic acid, rutin, rosmarinic acid, and luteolin. The six phenolic compounds were separated on an Agilent TC-C18 reversed-phase analytical column (4.6 × 250 mm, 5 μm) by gradient elution using 0.3% aqueous formic acid (v/v) and 0.3% methanol formic acid (v/v) at 1.0 mL/min. Materials and Methods: The plant material was separately ground and mixed at the following ratios (10): Cordia dichotoma (10.6), Anchusa italic (10.6), Euphorbia humifusa (4.9), Adiantum capillus-veneris (4.9), Ziziphus jujube (4.9), Glycyrrhiza uralensis (7.1), Foeniculum vulgare (4.9), Lavandula angustifolia (4.9), Dracocephalum moldavica L. (4.9), and Alhagi pseudoalhagi (42.3). Statistical Analysis Used: The precisions of all six compounds were Highly significant linear correlations were found between component concentrations and specific chromatographic peak areas (R2 > 0.999). Results: The proposed method was successfully applied to determine the levels of six active components in ASMQ. Conclusions: Given the simplicity, precision, specificity, and sensitivity of the method, it can be utilized as a quality control approach to simultaneously determining the six phenolic compounds in AMSQ. PMID:25709227

  16. Qualitative and quantitative analysis of an alkaloid fraction from Piper longum L. using ultra-high performance liquid chromatography-diode array detector-electrospray ionization mass spectrometry.

    Science.gov (United States)

    Li, Kuiyong; Fan, Yunpeng; Wang, Hui; Fu, Qing; Jin, Yu; Liang, Xinmiao

    2015-05-10

    In a previous research, an alkaloid fraction and 18 alkaloid compounds were prepared from Piper longum L. by series of purification process. In this paper, a qualitative and quantitative analysis method using ultra-high performance liquid chromatography-diode array detector-mass spectrometry (UHPLC-DAD-MS) was developed to evaluate the alkaloid fraction. Qualitative analysis of the alkaloid fraction was firstly completed by UHPLC-DAD method and 18 amide alkaloid compounds were identified. A further qualitative analysis of the alkaloid fraction was accomplished by UHPLC-MS/MS method. Another 25 amide alkaloids were identified according to their characteristic ions and neutral losses. At last, a quantitative method for the alkaloid fraction was established using four marker compounds including piperine, pipernonatine, guineensine and N-isobutyl-2E,4E-octadecadienamide. After the validation of this method, the contents of above four marker compounds in the alkaloid fraction were 57.5mg/g, 65.6mg/g, 17.7mg/g and 23.9mg/g, respectively. Moreover, the relative response factors of other three compounds to piperine were calculated. A comparative study between external standard quantification and relative response factor quantification proved no remarkable difference. UHPLC-DAD-MS method was demonstrated to be a powerful tool for the characterization of the alkaloid fraction from P. longum L. and the result proved that the quality of alkaloid fraction was efficiently improved after appropriate purification. Copyright © 2015. Published by Elsevier B.V.

  17. SU-F-T-32: Evaluation of the Performance of a Multiple-Array-Diode Detector for Quality Assurance Tests in High-Dose-Rate Brachytherapy with Ir-192 Source

    Energy Technology Data Exchange (ETDEWEB)

    Harpool, K; De La Fuente Herman, T; Ahmad, S; Ali, I [University of Oklahoma Health Sciences Center, Oklahoma City, OK (United States)

    2016-06-15

    Purpose: To evaluate the performance of a two-dimensional (2D) array-diode- detector for geometric and dosimetric quality assurance (QA) tests of high-dose-rate (HDR) brachytherapy with an Ir-192-source. Methods: A phantom setup was designed that encapsulated a two-dimensional (2D) array-diode-detector (MapCheck2) and a catheter for the HDR brachytherapy Ir-192 source. This setup was used to perform both geometric and dosimetric quality assurance for the HDR-Ir192 source. The geometric tests included: (a) measurement of the position of the source and (b) spacing between different dwell positions. The dosimteric tests include: (a) linearity of output with time, (b) end effect and (c) relative dose verification. The 2D-dose distribution measured with MapCheck2 was used to perform the previous tests. The results of MapCheck2 were compared with the corresponding quality assurance testes performed with Gafchromic-film and well-ionization-chamber. Results: The position of the source and the spacing between different dwell-positions were reproducible within 1 mm accuracy by measuring the position of maximal dose using MapCheck2 in contrast to the film which showed a blurred image of the dwell positions due to limited film sensitivity to irradiation. The linearity of the dose with dwell times measured from MapCheck2 was superior to the linearity measured with ionization chamber due to higher signal-to-noise ratio of the diode readings. MapCheck2 provided more accurate measurement of the end effect with uncertainty < 1.5% in comparison with the ionization chamber uncertainty of 3%. Although MapCheck2 did not provide absolute calibration dosimeter for the activity of the source, it provided accurate tool for relative dose verification in HDR-brachytherapy. Conclusion: The 2D-array-diode-detector provides a practical, compact and accurate tool to perform quality assurance for HDR-brachytherapy with an Ir-192 source. The diodes in MapCheck2 have high radiation sensitivity and

  18. An analytical study of the minority carrier distribution and photocurrent of a p-i-n quantum dot solar cell based on the InAs/GaAs system

    Science.gov (United States)

    Biswas, Sayantan; Sinha, Amitabha

    2017-10-01

    An analytical study has been carried out on the InAs/GaAs p+-i-n+ quantum dot solar cell, taking into consideration the contributions of each region of the cell to the total photocurrent. The expressions for the excess minority carrier concentration and photocurrent from the front and the rear regions of the device have been obtained and their variations with different device parameters have been studied. Also, based on the investigations reported by some researchers earlier, the photocurrent contribution from the intrinsic region of the solar has been studied, taking into account the quantum dot ensemble absorption coefficient, which depends significantly on the quantum dot size and size dispersion. It is observed that all the three regions of the cell contribute to the overall internal quantum efficiency (IQE) of the cell. The contribution of each region of the solar cell to the total IQE has been shown graphically. From these studies it is observed that the incorporation of the quantum dots in the intrinsic region enhance the photocurrent density and hence the IQE of such solar cell, as it absorbs low energy photons, which are beyond the absorption range of GaAs. Finally, the fill factor of the solar cell has been calculated.

  19. Development and validation of a rapid ultra-high performance liquid chromatography diode array detector method for Vitex agnus-castus.

    Science.gov (United States)

    Högner, C; Sturm, S; Seger, C; Stuppner, H

    2013-05-15

    A rapid ultra-high performance liquid chromatography diode array detector (UHPLC-DAD) method was developed and validated for the simultaneous determination of all classes of non-volatile phytochemicals (iridoids, flavonoids and diterpenes) in Vitex agnus-castus (Lamiaceae) fruits, a traditional medicinal plant used against premenstrual symptoms (PMS) and other disorders. Seven marker compounds, 3,4-dihydroxybenzoic acid, p-hydroxybenzoic acid, agnuside, 5-hydroxykaempferol-3,6,7,4'-tetramethylether, 1,2-dibenzoic acid glucose, methoxy-vitexilactone, and vitetrifolin D were isolated from the methanol extract of V. agnus-castus to be used as reference substances. Chromatographic separation was performed on a Zorbax Eclipse XDB-C18 (50mm×2.1mm) UHPLC column with 1.8μm particle size, within 20min. A solvent gradient from 0.5% acetic acid to acetonitrile at a flow rate of 0.6mL/min was used as mobile phase. Analyte detection and quantification was realized at 210nm and 260nm. The UHPLC-DAD assay was validated for the quantitative analysis of agnuside, isovitexin, casticin, 5-hydroxykaempferol-3,6,7,4'-tetramethylether and vitetrifolin D. It was found to be specific, accurate, precise, and reproducible for the quantification of these compound within a concentration range of 0.7-500.0μg/mL for casticin and 5-hydroxykaempferol-3,6,7,4'-tetramethylether, 1.4-1000.0μg/mL for isovitexin and agnuside, and 12.4-1000.0μg/mL for vitetrifolin D. Intra- and inter-day variations showed relative standard deviations (RSD) of less than 3.9% and 6.4%, respectively. Tentatively assignment of 62 chromatographic features found in the UHPLC-DAD assay was carried out by coupling the UHPLC instrument to a quadrupole time-of-flight mass spectrometer via an electrospray ionization interface (ESI-QTOF-MS) operated in positive and negative ion mode. By using the established quantitative UHPLC-DAD assay to asses agnuside, isovitexin, casticin, 5-hydroxykaempferol-3,6,7,4'-tetramethylether and

  20. State of the art in semiconductor detectors

    International Nuclear Information System (INIS)

    Rehak, P.; Gatti, E.

    1990-01-01

    The state of the art in semiconductor detectors for elementary particle physics and X-ray astronomy is briefly reviewed. Semiconductor detectors are divided into two groups; i) classical semiconductor diode detectors and ii) semiconductor memory detectors. Principles of signal formation for both groups of detectors are described and their performance is compared. New developments of silicon detectors are reported here. (orig.)

  1. State of the art in semiconductor detectors

    International Nuclear Information System (INIS)

    Rehak, P.; Gatti, E.

    1989-01-01

    The state of the art in semiconductor detectors for elementary particle physics and x-ray astronomy is briefly reviewed. Semiconductor detectors are divided into two groups; classical semiconductor diode detectors; and semiconductor memory detectors. Principles of signal formation for both groups of detectors are described and their performance is compared. New developments of silicon detectors are reported here. 13 refs., 8 figs

  2. Role of SiNx Barrier Layer on the Performances of Polyimide Ga2O3-doped ZnO p-i-n Hydrogenated Amorphous Silicon Thin Film Solar Cells

    Science.gov (United States)

    Wang, Fang-Hsing; Kuo, Hsin-Hui; Yang, Cheng-Fu; Liu, Min-Chu

    2014-01-01

    In this study, silicon nitride (SiNx) thin films were deposited on polyimide (PI) substrates as barrier layers by a plasma enhanced chemical vapor deposition (PECVD) system. The gallium-doped zinc oxide (GZO) thin films were deposited on PI and SiNx/PI substrates at room temperature (RT), 100 and 200 °C by radio frequency (RF) magnetron sputtering. The thicknesses of the GZO and SiNx thin films were controlled at around 160 ± 12 nm and 150 ± 10 nm, respectively. The optimal deposition parameters for the SiNx thin films were a working pressure of 800 × 10−3 Torr, a deposition power of 20 W, a deposition temperature of 200 °C, and gas flowing rates of SiH4 = 20 sccm and NH3 = 210 sccm, respectively. For the GZO/PI and GZO-SiNx/PI structures we had found that the GZO thin films deposited at 100 and 200 °C had higher crystallinity, higher electron mobility, larger carrier concentration, smaller resistivity, and higher optical transmittance ratio. For that, the GZO thin films deposited at 100 and 200 °C on PI and SiNx/PI substrates with thickness of ~000 nm were used to fabricate p-i-n hydrogenated amorphous silicon (α-Si) thin film solar cells. 0.5% HCl solution was used to etch the surfaces of the GZO/PI and GZO-SiNx/PI substrates. Finally, PECVD system was used to deposit α-Si thin film onto the etched surfaces of the GZO/PI and GZO-SiNx/PI substrates to fabricate α-Si thin film solar cells, and the solar cells’ properties were also investigated. We had found that substrates to get the optimally solar cells’ efficiency were 200 °C-deposited GZO-SiNx/PI. PMID:28788494

  3. Role of SiNx Barrier Layer on the Performances of Polyimide Ga2O3-doped ZnO p-i-n Hydrogenated Amorphous Silicon Thin Film Solar Cells

    Directory of Open Access Journals (Sweden)

    Fang-Hsing Wang

    2014-02-01

    Full Text Available In this study, silicon nitride (SiNx thin films were deposited on polyimide (PI substrates as barrier layers by a plasma enhanced chemical vapor deposition (PECVD system. The gallium-doped zinc oxide (GZO thin films were deposited on PI and SiNx/PI substrates at room temperature (RT, 100 and 200 °C by radio frequency (RF magnetron sputtering. The thicknesses of the GZO and SiNx thin films were controlled at around 160 ± 12 nm and 150 ± 10 nm, respectively. The optimal deposition parameters for the SiNx thin films were a working pressure of 800 × 10−3 Torr, a deposition power of 20 W, a deposition temperature of 200 °C, and gas flowing rates of SiH4 = 20 sccm and NH3 = 210 sccm, respectively. For the GZO/PI and GZO-SiNx/PI structures we had found that the GZO thin films deposited at 100 and 200 °C had higher crystallinity, higher electron mobility, larger carrier concentration, smaller resistivity, and higher optical transmittance ratio. For that, the GZO thin films deposited at 100 and 200 °C on PI and SiNx/PI substrates with thickness of ~1000 nm were used to fabricate p-i-n hydrogenated amorphous silicon (α-Si thin film solar cells. 0.5% HCl solution was used to etch the surfaces of the GZO/PI and GZO-SiNx/PI substrates. Finally, PECVD system was used to deposit α-Si thin film onto the etched surfaces of the GZO/PI and GZO-SiNx/PI substrates to fabricate α-Si thin film solar cells, and the solar cells’ properties were also investigated. We had found that substrates to get the optimally solar cells’ efficiency were 200 °C-deposited GZO-SiNx/PI.

  4. Thermometric characteristics of silicon semiconductor diodes

    International Nuclear Information System (INIS)

    Bezverkhnyaya, N.S.; Vasil'ev, L.M.; Dmitrevskij, Yu.P.; Mel'nik, Yu.M.

    1975-01-01

    To substantiate the feasibility of using silicon diodes made by the Soviet industry as detectors of temperature in the 15 - 300 K range, 25 different types of silicon diodes have been investigated. The results obtained for the thermometric characteristics of the diodes are presented in tabular form. It is shown that a stability of readings of up to 0.05 deg can be obtained [ru

  5. Application of PIN diodes in Physics Research

    International Nuclear Information System (INIS)

    Ramirez-Jimenez, F. J.; Mondragon-Contreras, L.; Cruz-Estrada, P.

    2006-01-01

    A review of the application of PIN diodes as radiation detectors in different fields of Physics research is presented. The development and research in semiconductor technology, the use of PIN diodes in particle counting, X-and γ-ray spectroscopy, medical applications and charged particle spectroscopy are considered. Emphasis is made in the activities realized in the different research and development Mexican institutions dealing with this kind of radiation detectors

  6. Solid state detector module

    International Nuclear Information System (INIS)

    Hoffman, D. M.

    1985-01-01

    A solid state detector in which each scintillator is optimally configured and coupled with its associated sensing diode in a way which exploits light piping effects to enhance efficiency, and at the same time provide a detector which is modular in nature. To achieve light piping, the scintillator crystal is oriented such that its sides conform with the crystal cleavage plane, and the sides are highly polished. An array of tungsten collimator plates define the individual channels. Multi-channel scintillator/diode modules are mounted behind and in registry with the plurality of collimator plates. A plurality of scintillators are bonded together after coating the surfaces thereof to minimize optical crosstalk. After lapping the face of the scintillator module, it is then bonded to a diode module with individual scintillators in registration with individual diodes. The module is then positioned in the detector array with collimator plates at the junctions between the scintillators

  7. Properties of silicium n-i-p junctions - application to the detection of relativist particles; Propriete des jonctions nip de silicium - Application a la detection des particules relativistes; Svojstva perekhoda p-i-n v kremnii - primenenie k obnaruzheniyu relyativistskikh chastits; Propiedades de estructuras nip de silicio - Aplicacion a la deteccion de particulas relativistas

    Energy Technology Data Exchange (ETDEWEB)

    Koch, L; Messier, J; Valin, J [Centre d' Etudes Nucleaires de Saclay (France)

    1962-04-15

    . (author) [Spanish] Los autores describen la experiencia adquirida en el CENS, en lo que se refiere a la deteccion de particulas nucleares por medio de semiconductores. Han estudiado especialmente cierto tipo de detector, de estructura pin. Suponiendo que se trabaje con materiales de igual pureza inicial, este dispositivo presenta, con respecto a los aparatos de estructura corriente pn o npp{sup +}, la ventaja de poseer un mayor volumen sensible. En efecto: a) a igual diferencia de potencial aplicada al cristal, el espesor total de las barreras es mayor; b) a igualdad de la corriente inversa, la maxima diferencia de potencial que admiten es mayor; c) siendo iguales todas las demas condiciones, su capacidad por unidad de superficie es menor y la maxima superficie admisible es, pues, mas elevada. Los autores describen detalladamente ciertos procedimientos que permiten obtener estructuras pin en el silicio, con un espesor de zona intermedia que alcanza a 1 mm. Finalmente, describen algunas aplicaciones de estos detectores, tales como la espectroscopia {alpha} y {gamma}, y la medida de dE/dX en el caso de las particulas relativistas. (author) [Russian] V dannoj rabote govoritsya ob opyte, provedennom v TSentre yadernykh issledovanij v Sakle, v oblasti obnaruzheniya yadernykh chastits s pomoshch'yu poluprovodnikov. V chastnosti, izuchalsya tip detektora s perekhodom p-i-n. Po sravneniyu s obychnymi perekhodami p-n ili npp{sup +} i pri uslovii ravnoj chistoty iskhodnogo materiala, ehtot perekhod imeet preimushchestvo, zaklyuchayushcheesya v bolee vysokoj chuvstvitel'nosti ; dejstvitel'no: 1) pri ravnoj raznosti potentsialov, prilozhennoj k kristallu, samym vazhnym yavlyaetsya obshchaya tolshchina bar'erov; 2) pri ravnom obratnom toke maksimal'naya raznost' potentsialov, kotoruyu oni vyderzhivayut, bolee vysoka; 3) pri drugikh ravnykh velichinakh ikh emkost' na edinitsu poverkhnosti nizhe, a maksimal'no dopustimaya poverkhnost' vyshe. V rabote podrobno opisyvayutsya nekotorye

  8. Characterisation of Silicon Pad Diodes

    CERN Document Server

    Hodson, Thomas Connor

    2017-01-01

    Silicon pad sensors are used in high luminosity particle detectors because of their excellent timing resolution, radiation tolerance and possible high granularity. The effect of different design decisions on detector performance can be investigated nondestructively through electronic characterisation of the sensor diodes. Methods for making accurate measurements of leakage current and cell capacitance are described using both a standard approach with tungsten needles and an automated approach with a custom multiplexer and probing setup.

  9. Analysis of the influence of processing of stir-baking with glycyrrhizae on the main components of Euodiae Fructus by high-performance liquid chromatography with diode array detector.

    Science.gov (United States)

    Hu, Jue; Wu, Xin; Cao, Gang; Chen, Xiaocheng

    2014-01-01

    Euodiae Fructus is one of the most commonly used Chinese herbs in China. Specifically, the crude Euodiae Fructus and its processed products of Gancao Zhi Pin are used clinically for the treatment of different diseases. In order to improve the quality control standard and evaluate the crude and processed Euodiae Fructus, in this study, a simple and sensitive high-performance liquid chromatography-diode array detector method was developed for the simultaneous determination of five major compounds in Euodiae Fructus. The results indicated that the five components had significant linear relation (r(2) ≥ 0.9997) between the peak area and the injected concentration. The average recoveries of the five components were in the range from 97.38% to 102.56%. Overall intra- and inter-day variations were less than 1.36%. The developed method can be applied to the intrinsic quality control of crude and processed Euodiae Fructus.

  10. Design and fabrication of a novel self-powered solid-state neutron detector

    Science.gov (United States)

    LiCausi, Nicholas

    There is a strong interest in intercepting special nuclear materials (SNM) at national and international borders and ports for homeland security applications. Detection of SNM such as U and Pu is often accomplished by sensing their natural or induced neutron emission. Such detector systems typically use thermal neutron detectors inside a plastic moderator. In order to achieve high detection efficiency gas filled detectors are often used; these detectors require high voltage bias for operation, which complicates the system when tens or hundreds of detectors are deployed. A better type of detector would be an inexpensive solid-state detector that can be mass-produced like any other computer chip. Research surrounding solid-state detectors has been underway since the late 1990's. A simple solid-state detector employs a planar solar-cell type p-n junction and a thin conversion material that converts incident thermal neutrons into detectable alpha-particles and 7Li ions. Existing work has typically used 6LiF or 10B as this conversion layer. Although a simple planar detector can act as a highly portable, low cost detector, it is limited to relatively low detection efficiency (˜10%). To increase the efficiency, 3D perforated p-i-n silicon devices were proposed. To get high efficiency, these detectors need to be biased, resulting in increased leakage current and hence detector noise. In this research, a new type of detector structure was proposed, designed and fabricated. Among several detector structures evaluated, a honeycomb-like silicon p-n structure was selected, which is filled with natural boron as the neutron converter. A silicon p+-n diode formed on the thin silicon wall of the honeycomb structure detects the energetic alpha-particles emitted from the boron conversion layer. The silicon detection layer is fabricated to be fully depleted with an integral step during the boron filling process. This novel feature results in a simplified fabrication process. Three

  11. Amorphous silicon based particle detectors

    OpenAIRE

    Wyrsch, N.; Franco, A.; Riesen, Y.; Despeisse, M.; Dunand, S.; Powolny, F.; Jarron, P.; Ballif, C.

    2012-01-01

    Radiation hard monolithic particle sensors can be fabricated by a vertical integration of amorphous silicon particle sensors on top of CMOS readout chip. Two types of such particle sensors are presented here using either thick diodes or microchannel plates. The first type based on amorphous silicon diodes exhibits high spatial resolution due to the short lateral carrier collection. Combination of an amorphous silicon thick diode with microstrip detector geometries permits to achieve micromete...

  12. Detectors - Electronics

    International Nuclear Information System (INIS)

    Bregeault, J.; Gabriel, J.L.; Hierle, G.; Lebotlan, P.; Leconte, A.; Lelandais, J.; Mosrin, P.; Munsch, P.; Saur, H.; Tillier, J.

    1998-01-01

    The reports presents the main results obtained in the fields of radiation detectors and associated electronics. In the domain of X-ray gas detectors for the keV range efforts were undertaken to rise the detector efficiency. Multiple gap parallel plate chambers of different types as well as different types of X → e - converters were tested to improve the efficiency (values of 2.4% at 60 KeV were reached). In the field of scintillators a study of new crystals has been carried out (among which Lutetium orthosilicate). CdTe diode strips for obtaining X-ray imaging were studied. The complete study of a linear array of 8 CdTe pixels has been performed and certified. The results are encouraging and point to this method as a satisfying solution. Also, a large dimension programmable chamber was used to study the influence of temperature on the inorganic scintillators in an interval from -40 deg. C to +150 deg. C. Temperature effects on other detectors and electronic circuits were also investigated. In the report mentioned is also the work carried out for the realization of the DEMON neutron multidetector. For neutron halo experiments different large area Si detectors associated with solid and gas position detectors were realized. In the frame of a contract with COGEMA a systematic study of Li doped glasses was undertaken aiming at replacing with a neutron probe the 3 He counters presently utilized in pollution monitoring. An industrial prototype has been realised. Other studies were related to integrated analog chains, materials for Cherenkov detectors, scintillation probes for experiments on fundamental processes, gas position sensitive detectors, etc. In the field of associated electronics there are mentioned the works related to the multidetector INDRA, data acquisition, software gamma spectrometry, automatic gas pressure regulation in detectors, etc

  13. Quantitative Analysis and Comparison of Four Major Flavonol Glycosides in the Leaves of Toona sinensis (A. Juss.) Roemer (Chinese Toon) from Various Origins by High-Performance Liquid Chromatography-Diode Array Detector and Hierarchical Clustering Analysis

    Science.gov (United States)

    Sun, Xiaoxiang; Zhang, Liting; Cao, Yaqi; Gu, Qinying; Yang, Huan; Tam, James P.

    2016-01-01

    Background: Toona sinensis (A. Juss.) Roemer is an endemic species of Toona genus native to Asian area. Its dried leaves are applied in the treatment of many diseases; however, few investigations have been reported for the quantitative analysis and comparison of major bioactive flavonol glycosides in the leaves harvested from various origins. Objective: To quantitatively analyze four major flavonol glycosides including rutinoside, quercetin-3-O-β-D-glucoside, quercetin-3-O-α-L-rhamnoside, and kaempferol-3-O-α-L-rhamnoside in the leaves from different production sites and classify them according to the content of these glycosides. Materials and Methods: A high-performance liquid chromatography-diode array detector (HPLC-DAD) method for their simultaneous determination was developed and validated for linearity, precision, accuracy, stability, and repeatability. Moreover, the method established was then employed to explore the difference in the content of these four glycosides in raw materials. Finally, a hierarchical clustering analysis was performed to classify 11 voucher specimens. Results: The separation was performed on a Waters XBridge Shield RP18 column (150 mm × 4.6 mm, 3.5 μm) kept at 35°C, and acetonitrile and H2O containing 0.30% trifluoroacetic acid as mobile phase was driven at 1.0 mL/min during the analysis. Ten microliters of solution were injected and 254 nm was selected to monitor the separation. A strong linear relationship between the peak area and concentration of four analytes was observed. And, the method was also validated to be repeatable, stable, precise, and accurate. Conclusion: An efficient and reliable HPLC-DAD method was established and applied in the assays for the samples from 11 origins successfully. Moreover, the content of those flavonol glycosides varied much among different batches, and the flavonoids could be considered as biomarkers to control the quality of Chinese Toon. SUMMARY Four major flavonol glycosides in the leaves

  14. Department of Radiation Detectors - Overview

    International Nuclear Information System (INIS)

    Piekoszewski, J.

    1997-01-01

    Work carried out in 1996 in the Department of Radiation Detectors concentrated on three subjects: (i) Semiconductor Detectors (ii) X-ray Tube Generators (iii) Material Modification Using Ion and Plasma Beams. The Departamental objectives are: a search for new types of detectors, adapting modern technologies (especially of industrial microelectronics) to detector manufacturing, producing unique detectors tailored for physics experiments, manufacturing standard detectors for radiation measuring instruments. These objectives were accomplished in 1996 by: research on unique detectors for nuclear physics (e.g. a spherical set of particle detectors silicon ball), detectors for particle identification), development of technology of high-resistivity silicon detectors HRSi (grant proposal), development of thermoelectric cooling systems (grant proposal), research on p-i-n photodiode-based personal dosimeters, study of applicability of industrial planar technology in producing detectors, manufacturing detectors developed in previous years, re-generating and servicing customer detectors of various origin. The Department conducts research on the design and technology involved in producing X-ray generators based on X-ray tubes of special construction. Various tube models and their power supplies were developed. Some work has also been devoted to the detection and dosimetry of X-rays. X-ray tube generators are applied to non-destructive testing and are components of analytical systems such as: X-ray fluorescence chemical composition analysis, gauges of layer thickness and composition stress measurements, on-line control of processes, others where an X-ray tube may replace a radio-isotope source. In 1996, the Department: reviewed the domestic demand for X-ray generators, developed an X-ray generator for diagnosis of ostheroporosis of human limbs, prepared a grant proposal for the development of a new instrument for radiotherapy, the so-called needle-like X-ray tube. (author)

  15. Department of Radiation Detectors - Overview

    Energy Technology Data Exchange (ETDEWEB)

    Piekoszewski, J. [Soltan Inst. for Nuclear Studies, Otwock-Swierk (Poland)

    1997-12-31

    Work carried out in 1996 in the Department of Radiation Detectors concentrated on three subjects: (i) Semiconductor Detectors (ii) X-ray Tube Generators (iii) Material Modification Using Ion and Plasma Beams. The Departamental objectives are: a search for new types of detectors, adapting modern technologies (especially of industrial microelectronics) to detector manufacturing, producing unique detectors tailored for physics experiments, manufacturing standard detectors for radiation measuring instruments. These objectives were accomplished in 1996 by: research on unique detectors for nuclear physics (e.g. a spherical set of particle detectors silicon ball), detectors for particle identification), development of technology of high-resistivity silicon detectors HRSi (grant proposal), development of thermoelectric cooling systems (grant proposal), research on p-i-n photodiode-based personal dosimeters, study of applicability of industrial planar technology in producing detectors, manufacturing detectors developed in previous years, re-generating and servicing customer detectors of various origin. The Department conducts research on the design and technology involved in producing X-ray generators based on X-ray tubes of special construction. Various tube models and their power supplies were developed. Some work has also been devoted to the detection and dosimetry of X-rays. X-ray tube generators are applied to non-destructive testing and are components of analytical systems such as: X-ray fluorescence chemical composition analysis, gauges of layer thickness and composition stress measurements, on-line control of processes, others where an X-ray tube may replace a radio-isotope source. In 1996, the Department: reviewed the domestic demand for X-ray generators, developed an X-ray generator for diagnosis of ostheroporosis of human limbs, prepared a grant proposal for the development of a new instrument for radiotherapy, the so-called needle-like X-ray tube. (author).

  16. Systematic chemical profiling of Citrus grandis 'Tomentosa' by ultra-fast liquid chromatography/diode-array detector/quadrupole time-of-flight tandem mass spectrometry.

    Science.gov (United States)

    Li, Pan-lin; Liu, Meng-hua; Hu, Jie-hui; Su, Wei-wei

    2014-03-01

    Citrus grandis 'Tomentosa', as the original plant of the traditional Chinese medicine "Huajuhong", has been used as antitussive and expectorant in clinic for thousands of years. The fruit epicarp and whole fruit of this plant were both literarily recorded and commonly used. In the present study, an ultra-fast liquid chromatography coupled with diode-array detection and quadrupole/time-of-flight mass spectrometry (UFLC-DAD-Q-TOF-MS/MS) based chemical profiling method was developed for rapid holistic quality evaluation of C. grandis 'Tomentosa', which laid basis for chemical comparison of two medicinal parts. As a result, forty-eight constituents, mainly belonging to flavonoids and coumarins, were unambiguously identified by comparison with reference standards and/or tentatively characterized by elucidating UV spectra, quasi-molecular ions and fragment ions referring to information available in literature. Both of the epicarp and whole fruit samples were rich in flavonoids and coumarins, but major flavonoids contents in whole fruit were significantly higher than in epicarp (P<0.5). The proposed method could be useful in quality control and standardization of C. grandis 'Tomentosa' raw materials and its products. Results obtained in this study will provide a basis for quality assessment and further study in vivo. Copyright © 2013 Elsevier B.V. All rights reserved.

  17. Second-order capillary electrophoresis diode array detector data modeled with the Tucker3 algorithm: A novel strategy for Argentinean white wine discrimination respect to grape variety.

    Science.gov (United States)

    Azcarate, Silvana M; de Araújo Gomes, Adriano; Vera-Candioti, Luciana; Cesar Ugulino de Araújo, Mário; Camiña, José M; Goicoechea, Héctor C

    2016-07-01

    Data obtained by capillary electrophoresis with diode array detection (CE-DAD) were modeled with the purpose to discriminate Argentinean white wines samples produced from three grape varieties (Torrontés, Chardonnay, and Sauvignon blanc). Thirty-eight samples of commercial white wine from four wine-producing provinces of Argentina (Mendoza, San Juan, Salta, and Rio Negro) were analyzed. CE-DAD matrices with dimensions of 421 elution times (from 1.17 to 7.39 minutes) × 71 wavelengths (from 227 to 367 nm) were joined in a three way data array and decomposed by Tucker3 method under non-negativity constraint, employing 18, 18 and six factors in the modes 1, 2 and 3, respectively. Using the scores of Tucker model, it was possible to discriminate samples of Argentinean white wine by linear discriminant analysis and Kernel linear discriminant analysis. Core element analysis of the Tucker3 model allows identifying the loading profiles in spectral mode related to Argentinean white wine samples. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  18. Identification of protein binders in works of art by high-performance liquid chromatography-diode array detector analysis of their tryptic digests.

    Science.gov (United States)

    Fremout, Wim; Sanyova, Jana; Saverwyns, Steven; Vandenabeele, Peter; Moens, Luc

    2009-04-01

    Proteins in works of art are generally determined by the relative amounts of amino acids. This method, however, implies a loss of information on the protein structure and its modifications. Consequently, we propose a method based on the analysis of trypsin digests using high-performance liquid chromatography (HPLC) UV diode array detection (DAD) for painting binder studies. All reaction steps are done in the same vial; no extraction methods or sample transfer is needed, reducing the risk of sample losses. A collection of pure binders (collagen, ovalbumin, yolk and casein) as well as homemade and historical paint samples have been investigated with this method. Chromatograms of unknowns at 214 nm and 280 nm are compared with those of the reference samples as a fingerprint. There is a good agreement between many peptides, but others seem to have been lost or their retention time shifted due to small compositional changes because of ageing and degradation of the paint. The results are comparable with the results of other techniques used for binder identification on the same samples, with the additional advantage of differentiation between egg yolk and glair.

  19. Ionization detector

    Energy Technology Data Exchange (ETDEWEB)

    Solomon, E E

    1976-02-27

    This invention concerns a fire detection system making use of a beta source. The ionisation detector includes a first and second chamber respectively comprising a first and second electrode, preferably a plate, with a common electrode separating the first and second chamber. Communication is provided between these chambers through a set of orifices and each chamber also has a set of orifices for communication with the ambient atmosphere. One or both chambers can comprise a particle source, preferably beta. The detector also has an adjustable electrode housed in one of the chambers to regulate the voltage between the fixed electrode of this chamber and the common electrode located between the chambers. The electrodes of the structure are connected to a detection circuit that spots a change in the ionisation current when a fire alarm condition arises. The detection circuit of a new type includes a relaxation oscillator with a programmable unijunction transistor and a light emitting diode.

  20. Simultaneous Determination of Procainamide and N-acetylprocainamide in Rat Plasma by Ultra-High-Pressure Liquid Chromatography Coupled with a Diode Array Detector and Its Application to a Pharmacokinetic Study in Rats.

    Science.gov (United States)

    Balla, Anusha; Cho, Kwan Hyung; Kim, Yu Chul; Maeng, Han-Joo

    2018-03-30

    A simple, sensitive, and reliable reversed-phase, Ultra-High-Pressure Liquid Chromatography (UHPLC) coupled with a Diode Array Detector (DAD) method for the simultaneous determination of Procainamide (PA) and its major metabolite, N -acetylprocainamide (NAPA), in rat plasma was developed and validated. A simple deproteinization method with methanol was applied to the rat plasma samples, which were analyzed using UHPLC equipped with DAD at 280 nm, and a Synergi™ 4 µm polar, reversed-phase column using 1% acetic acid (pH 5.5) and methanol (76:24, v / v ) as eluent in isocratic mode at a flow rate 0.2 mL/min. The method showed good linearity ( r ² > 0.998) over the concentration range of 20-100,000 and 20-10,000 ng/mL for PA and NAPA, respectively. Intra- and inter-day accuracies ranged from 97.7 to 110.9%, and precision was HPLC methods is that it requires small sample and injection volumes, with a straightforward, one-step sample preparation. It overcomes the limitations of previous methods, which use large sample volume and complex sample preparation. The devised method was successfully applied to the quantification of PA and NAPA after an intravenous bolus administration of 10 mg/kg procainamide hydrochloride to rats.

  1. Simultaneous quantification of eight bioactive components of Houttuynia cordata and related Saururaceae medicinal plants by on-line high performance liquid chromatography-diode array detector-electrospray mass spectrometry.

    Science.gov (United States)

    Meng, Jiang; Leung, Kelvin Sze-Yin; Dong, Xiao-Ping; Zhou, Yi-Sheng; Jiang, Zhi-Hong; Zhao, Zhong-Zhen

    2009-12-01

    An on-line high performance liquid chromatography (HPLC)-diode array detector (DAD)-electrospray ionization mass spectrometry (ESI-MS) method has been developed to quantify simultaneously eight bioactive chemical components in Houttuynia cordata Thunb and related Saururaceae medicinal plants. Simultaneous separation of these eight compounds was achieved on a C(18) analytical column with gradient elution of acetonitrile and 0.2% acetic acid (v/v) at a flow rate of 0.6 mL/min and being detected at 280 nm. These eight compounds were completely separated within 90 min. Good linear regression relationship (r(2)>0.9978) within test ranges was shown in all calibration curves. Good repeatabilty for the quantification of these eight compounds in H.cordata was also demonstrated in this method, with intra- and inter-day variations less than 3.0%. The method established was successfully applied to quantify eight bioactive compounds in closely related species of H.cordata, which provides a new basis for quality assessment of H.cordata.

  2. Position detector

    International Nuclear Information System (INIS)

    Hayakawa, Toshifumi.

    1985-01-01

    Purpose: To enable to detect the position of an moving object in a control rod position detector, stably in a digital manner at a high accuracy and free from the undesired effects of circumstantial conditions such as the reactor temperature. Constitution: Coils connected in parallel with each other are disposed along the passage of a moving object and variable resistors and relays are connected in series with each of the coils respectively. Light emitting diodes is connected in series with the contacts of the respective relays. The resistance value of the variable resistors are adjusted depending on the changes in the circumstantial conditions and temperature distribution upon carrying out the positional detection. When the object is inserted into a coils, the relevant relay is deenergized, by which the relay contacts are closed to light up the diode. In the same manner, as the object is successively inserted into the coils, the diodes are lighted-up successively thereby enabling highly accurate and stable positional detection in a digital manner, free from the undesired effects of the circumstantial conditions. (Horiuchi, T.)

  3. Cold cathode diode X-ray source

    International Nuclear Information System (INIS)

    Cooperstein, G.; Lanza, R.C.; Sohval, A.R.

    1983-01-01

    A cold cathode diode X-ray source for radiation imaging, especially computed tomography, comprises a rod-like anode and a generally cylindrical cathode, concentric with the anode. The spacing between anode and cathode is so chosen that the diode has an impedance in excess of 100 ohms. The anode may be of tungsten, or of carbon with a tungsten and carbon coating. An array of such diodes may be used with a closely packed array of detectors to produce images of rapidly moving body organs, such as the beating heart. (author)

  4. Determination of flavonoids, phenolic acid and polyalcohol in Butea monosperma and Hedychium coronarium by semi-preparative HPLC Photo Diode Array (PDA Detector

    Directory of Open Access Journals (Sweden)

    Jignasu P. Mehta

    2014-12-01

    Full Text Available The semi preparative HPLC method with PDA Detector was proposed for the determination of one phenolic acid, three flavonoids and one polyalcohol from Butea monosperma and Hedychium coronarium in gradient elution system. The influence of composition of the mobile phase concentration of the mix modifier and temperature on the separation of gallic acid, quercetin, iso-butrin, butrin and eugenol for 90 min was studied. Two different gradient programmes were used to separate these components. The lower limit of quantification of phenolic acid, flavonoids and eugenol is 0.050–0.150 μg/mL and was determined by the least square method and a good correlation was obtained for all separated components.

  5. White LEDs as broad spectrum light sources for spectrophotometry: demonstration in the visible spectrum range in a diode-array spectrophotometric detector.

    Science.gov (United States)

    Piasecki, Tomasz; Breadmore, Michael C; Macka, Mirek

    2010-11-01

    Although traditional lamps, such as deuterium lamps, are suitable for bench-top instrumentation, their compatibility with the requirements of modern miniaturized instrumentation is limited. This study investigates the option of utilizing solid-state light source technology, namely white LEDs, as a broad band spectrum source for spectrophotometry. Several white light LEDs of both RGB and white phosphorus have been characterized in terms of their emission spectra and energy output and a white phosphorus Luxeon LED was then chosen for demonstration as a light source for visible-spectrum spectrophotometry conducted in CE. The Luxeon LED was fixed onto the base of a dismounted deuterium (D(2) ) lamp so that the light-emitting spot was geometrically positioned exactly where the light-emitting spot of the original D(2) lamp is placed. In this manner, the detector of a commercial CE instrument equipped with a DAD was not modified in any way. As the detector hardware and electronics remained the same, the change of the deuterium lamp for the Luxeon white LED allowed a direct comparison of their performances. Several anionic dyes as model analytes with absorption maxima between 450 and 600 nm were separated by CE in an electrolyte of 0.01 mol/L sodium tetraborate. The absorbance baseline noise as the key parameter was 5 × lower for the white LED lamp, showing clearly superior performance to the deuterium lamp in the available, i.e. visible part of the spectrum. Copyright © 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  6. Vertex detectors

    International Nuclear Information System (INIS)

    Lueth, V.

    1992-07-01

    The purpose of a vertex detector is to measure position and angles of charged particle tracks to sufficient precision so as to be able to separate tracks originating from decay vertices from those produced at the interaction vertex. Such measurements are interesting because they permit the detection of weakly decaying particles with lifetimes down to 10 -13 s, among them the τ lepton and charm and beauty hadrons. These two lectures are intended to introduce the reader to the different techniques for the detection of secondary vertices that have been developed over the past decades. The first lecture includes a brief introduction to the methods used to detect secondary vertices and to estimate particle lifetimes. It describes the traditional technologies, based on photographic recording in emulsions and on film of bubble chambers, and introduces fast electronic registration of signals derived from scintillating fibers, drift chambers and gaseous micro-strip chambers. The second lecture is devoted to solid state detectors. It begins with a brief introduction into semiconductor devices, and then describes the application of large arrays of strip and pixel diodes for charged particle tracking. These lectures can only serve as an introduction the topic of vertex detectors. Time and space do not allow for an in-depth coverage of many of the interesting aspects of vertex detector design and operation

  7. Diodes based on semi-insulating CdTe crystals with Mo/MoO{sub x} contacts for X- and γ-ray detectors

    Energy Technology Data Exchange (ETDEWEB)

    Maslyanchuk, O.; Kulchynsky, V.; Solovan, M. [Chernivtsi National University, Chernivtsi (Ukraine); Gnatyuk, V. [Institute of Semiconductor Physics, NAS of Ukraine, Kyiv (Ukraine); Potiriadis, C. [Greek Atomic Energy Commission, Attiki (Greece); Kaissas, I. [Greek Atomic Energy Commission, Attiki (Greece); Department of Electrical and Computer Engineering, Aristotle University of Thessaloniki (Greece); Brus, V. [Helmholtz-Zentrum Berlin fuer Materialien und Energie GmbH, Berlin (Germany)

    2017-03-15

    This paper reports on the possible applications of molybdenum oxide (Mo/MoO{sub x}) contacts in combination with semi-insulating CdTe crystals. The electrical contacts to p-type Cl-doped CdTe crystals were formed by the deposition of molybdenum oxide and pure molybdenum thin films by the DC reactive magnetron sputtering. Electrical properties of the prepared Mo-MoO{sub x}/p-CdTe/MoO{sub x}-Mo surface-barrier structures were investigated at different temperatures. It is shown that the rapid growth of the reverse current with increasing bias voltage higher than 10 V is caused by the space-charge limited currents. Spectrometric properties of the Mo-MoO{sub x}/p-CdTe/MoO{sub x}-Mo structures have been also analyzed. It is revealed that the developed heterojunction has shown promising characteristics for its practical application in X- and γ-ray radiation detector fabrication. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  8. Characterisation of nucleosides and nucleobases in Mactra veneriformis by high performance liquid chromatography coupled with diode array detector-mass spectrometry (HPLC-DAD-MS).

    Science.gov (United States)

    Liu, Rui; Ji, Jing; Wang, Lingchong; Chen, Shiyong; Guo, Sheng; Wu, Hao

    2012-11-15

    Mactra veneriformis has been used as sea food and traditional Chinese medicine (TCM) for thousands of years in China. In the present study, a high performance liquid chromatograph coupled with photodiode array detector and electrospray ionisation-mass spectrometer (HPLC-DAD-ESI-MS) method was established for detection of the nucleosides and nucleobases in M. veneriformis from four aquaticultural area of Jiangsu during different harvest time of one year. The validated method was successfully applied to identifying 10 nucleosides and nucleobases in 48 M. veneriformis samples. Quantitative analysis showed that nucleosides and nucleobases are rich in all M. veneriformis samples. However, their contents vary in different areas and harvest times. Principal component analysis (PCA) was used to classify the 48 samples based on the contents of the nucleosides and nucleobases. As a result, the samples could be mainly clustered into four groups, which was similar as aquaticultural areas classification. Based on the results, present method might be applicable for the quality control of M. veneriformis, or even other marine shellfish aquiculture and their products, and the quality of M. veneriformis might be more related with aquaticultural areas. Copyright © 2012 Elsevier Ltd. All rights reserved.

  9. Liquid diode

    International Nuclear Information System (INIS)

    1976-01-01

    The liquid diode is designed for a flowmeter chamber which has an inlet and an outlet duct, and a flow chamber with a cross-section which is greater than inlet. In the space between the inlet and outlet are two screens with a number of spheres, which may be of different sizes and weights. The screen on the inlet side is smaller than that at the outlet, so that the spheres are able to block the inlet under reverse flow conditions, but do not block the outlet. The system functions as a non-return valve. (G.C.)

  10. Personal neutron diode dosemeter

    International Nuclear Information System (INIS)

    Barthe, J.; Lahaye, T.; Moiseev, T.; Portal, G.

    1993-01-01

    The control and management of neutron doses, received by workers in nuclear power or research facilities, requires a knowledge of cumulated dose equivalent or dose equivalent rate in real time. Individual dosemeters so far developed for this purpose are scarce and not very satisfactory. Passive dosemeters such as TLD systems based on the albedo effect, nuclear emulsions or solid track detectors, do not give sufficiently accurate measurements. Furthermore, the increase in the quality factor and the more restrictive new ICRP recommendations diminish the maximum admissible threshold making currently used systems obsolete. Other than bubble dosemeter systems, based on thermodynamic effects of a superheated gel, no simple electronic device is available at the present time. The development of diode based dosimetric gamma badges, having a size similar to that of credit cards, has stimulated us to design and develop a personal neutron dosemeter based on a double diode system. The results obtained are very encouraging and practical models should become available in the near future. (author)

  11. Sensitive characterization of polyphenolic antioxidants in Polygonatum odoratum by selective solid phase extraction and high performance liquid chromatography-diode array detector-quadrupole time-of-flight tandem mass spectrometry.

    Science.gov (United States)

    Hu, Xin; Zhao, Huading; Shi, Shuyun; Li, Hui; Zhou, Xiaoling; Jiao, Feipeng; Jiang, Xinyu; Peng, Dongming; Chen, Xiaoqin

    2015-08-10

    The complexity of natural products always leads to the co-elution of interfering compounds with bioactive compounds, which then has a detrimental effect on structural elucidation. Here, a new method, based on selective solid phase extraction combined with 1,1-diphenyl-2-picrylhydrazyl radical (DPPH) spiking and high performance liquid chromatography-diode array detector-quadrupole time-of-flight tandem mass spectrometry (HPLC-DAD-QTOF-MS/MS), is described for sensitive screening, selective extraction and identification of polyphenolic antioxidants in Polygonatum odoratum. First, 25 polyphenolic antioxidants (1-25) were screened by DPPH spiking with HPLC. Second, polydopamine coated Fe3O4 microspheres (Fe3O4@PDA) were prepared to selectively extract target antioxidants with extraction efficiency from 55% to 100% when the amount of Fe3O4@PDA, extraction time, desorption solvent and time were 10mg, 20 min, acetonitrile, and 5 min. Third, 25 antioxidants (10 cinnamides and 15 homoisoflavanones) were identified by HPLC-DAD-QTOF-MS/MS. Furthermore, the DPPH scavenging activities of purified compounds (IC50, 1.6-32.8 μg/mL) validated the method. Among the identified antioxidants, four of them (12, 13, 18 and 19) were new compounds, four of them (2, 4, 8 and 14) were first obtained from family Liliaceae, five of them (1, 3, 5, 7 and 9) were first reported in genus Polygonatum, while one compound (24) was first identified in this species. The results indicated that the proposed method was an efficient and sensitive approach to explore polyphenolic antioxidants from complex natural products. Copyright © 2015 Elsevier B.V. All rights reserved.

  12. High-speed counter-current chromatography coupled online to high performance liquid chromatography-diode array detector-mass spectrometry for purification, analysis and identification of target compounds from natural products.

    Science.gov (United States)

    Liang, Xuejuan; Zhang, Yuping; Chen, Wei; Cai, Ping; Zhang, Shuihan; Chen, Xiaoqin; Shi, Shuyun

    2015-03-13

    A challenge in coupling high-speed counter-current chromatography (HSCCC) online with high performance liquid chromatography (HPLC) for purity analysis was their time incompatibility. Consequently, HSCCC-HPLC was conducted by either controlling HPLC analysis time and HSCCC flow rate or using stop-and-go scheme. For natural products containing compounds with a wide range of polarities, the former would optimize experimental conditions, while the latter required more time. Here, a novel HSCCC-HPLC-diode array detector-mass spectrometry (HSCCC-HPLC-DAD-MS) was developed for undisrupted purification, analysis and identification of multi-compounds from natural products. Two six-port injection valves and a six-port switching valve were used as interface for collecting key HSCCC effluents alternatively for HPLC-DAD-MS analysis and identification. The ethyl acetate extract of Malus doumeri was performed on the hyphenated system to verify its efficacy. Five main flavonoids, 3-hydroxyphloridzin (1), phloridzin (2), 4',6'-dihydroxyhydrochalcone-2'-O-β-D-glucopyranoside (3, first found in M. doumeri), phloretin (4), and chrysin (5), were purified with purities over 99% by extrusion elution and/or stepwise elution mode in two-step HSCCC, and 25mM ammonium acetate solution was selected instead of water to depress emulsification in the first HSCCC. The online system shortened manipulation time largely compared with off-line analysis procedure and stop-and-go scheme. The results indicated that the present method could serve as a simple, rapid and effective way to achieve target compounds with high purity from natural products. Copyright © 2015 Elsevier B.V. All rights reserved.

  13. Simultaneous Determination of Four Compounds, Campesterol, Emodin8-O-β-D-Glucopyranoside, Quercetin, and Isoquercitrin in Reynoutria sachalinensis by High-performance Liquid Chromatography-Diode Array Detector

    Science.gov (United States)

    Eom, Min Rye; Weon, Jin Bae; Jung, Youn Sik; Ryu, Ga Hee; Yang, Woo Seung; Ma, Choong Je

    2017-01-01

    Background: Reynoutria sachalinensis is a well-known and used herbal medicine to treatment of arthralgia, jaundice, amenorrhea, coughs, carbuncles, and sores. Objective: We have developed high-performance liquid chromatography analysis method for simultaneous determination of isolated four compounds, campesterol, emodin8-O-β-D-glucopyranoside, quercetin, and isoquercitrin from R. sachalinensis is. Materials and Methods: The four compounds were separated on Shiseido C18 column (S-5 μm, 4.6 mm I.D. ×250 mm) at a column temperature of 25°C. The mobile phase composed of water and methanol with gradient elution system, and flow rate is 1.0 ml/min. The detection wavelength was set at 205 nm. Results: Validation of this analytical method was evaluated by linearity, precision, and accuracy test. This established method had good linearity (R2 > 0.997). The relative standard deviation values of intra- and inter-day testing were indicated that <2%, and accuracy is 91.66%–103.31% at intraday and 91.69%–103.31% at intraday. The results of recovery test were 92.60%–108.99%. Conclusion: In these results, developed method was accurate and reliable to the quality evaluation of campesterol, emodin 8-O-β-D-glucopyranoside, quercetin, and isoquercitrin isolated from R. sachalinensis. SUMMARY We have developed high-performance liquid analysis method for simultaneous determination of 4 compounds of Reynoutria sachalinensis. Abbreviations used: HPLC: High-performance liquid chromatography, DAD: Diode array detector, LOD: Limit of detection, LOQ: Limit of quantitation, ICH: International Conference on Harmonisation. PMID:28808389

  14. Calibration comparative results for X - and gamma ray spectrometry with HPGe and BEGe detectors for a radon reference chamber

    International Nuclear Information System (INIS)

    Zoran, Maria; Paul, Annette; Arnold, Dirk

    2002-01-01

    Inhaled decay products of 222 Rn are the dominant components of the natural radiation exposure being responsible for about 30% of the whole human radioactive exposure. Field instruments for 222 Rn and his progeny monitoring are calibrated in 'radon climate rooms', where it is possible to vary and monitor 222 Rn and the indoor air parameters ( temperature, humidity, ventilation rate, aerosol concentration). German radon reference chamber used was developed and installed at the Physikalisch-Technische Bundesanstalt in order to serve as a metrological standard for radon and his progeny calibration of active and passive, indoor and outdoor radon monitoring devices in air climate. The basic parts of experimental setup for this γ and X -ray spectrometry analysis consists of a γ-X ray source in a lead shield/collimator, the detectors, the electronics necessary for pulse-height analysis (PHA) to obtain energy spectra. For calibrating system with 226 Ra standard sources (multienergy X ray and gamma emitters), two germanium detectors HPGe (12.5 nominal efficiency) and BEGe (22.5 nominal efficiency) were used. Germanium detectors are semiconductor diodes having a P-I-N structure in which the Intrinsic (I) region is sensitive to ionizing radiation, particularly X-rays and gamma rays. The BEGe is designed with an electrode structure that enhances low energy resolution and is fabricated from selected germanium having an impurity profile that improves charge collection (thus resolution and peak shape) at high energies which is really important in analysis of the complex spectra for uranium and finally for 226 Ra. MAESTRO MCA software and GNUPLOT program were used for spectra acquisition and spectra analysis, respectively . The main aim of this paper was to do a comparatively analysis of the detector performances for this radon chamber spectrometric chain. The calibration data analysis includes energy calibrations for both detection systems as well as comparative X and gamma

  15. Solid state radiation detector system

    International Nuclear Information System (INIS)

    1977-01-01

    A solid state radiation flux detector system utilizes a detector element, consisting of a bar of semiconductor having electrical conductance of magnitude dependent upon the magnitude of photon and charged particle flux impinging thereon, and negative feedback circuitry for adjusting the current flow through a light emitting diode to facilitate the addition of optical flux, having a magnitude decreasing in proportion to any increase in the magnitude of radiation (e.g. x-ray) flux incident upon the detector element, whereby the conductance of the detector element is maintained essentially constant. The light emitting diode also illuminates a photodiode to generate a detector output having a stable, highly linear response with time and incident radiation flux changes

  16. Hydrogenated amorphous silicon radiation detectors: Material parameters; radiation hardness; charge collection

    International Nuclear Information System (INIS)

    Qureshi, S.

    1991-01-01

    Properties of hydrogenated amorphous silicon p-i-n diodes relevant to radiation detection applications were studied. The interest in using this material for radiation detection applications in physics and medicine was motivated by its high radiation hardness and the fact that it can be deposited over large area at relatively low cost. Thick, fully depleted a-Si:H diodes are required for sufficient energy deposition by a charged particle and better signal to noise ratio. A sizeable electric field is essential for charge collection in a -Si:H diodes. The large density of ionized defects that exist in the i layer when the diode is under DC bias causes the electric field to be uniform. Material parameters, namely carrier mobility and lifetime and the ionized defect density in thick a-Si:H p-i-n diodes were studied by the transient photoconductivity method. The increase in diode leakage current with reverse bias over the operating bias was consistent with the Poole-Frenkel effect, involving excitation of carriers from neutral defects. The diode noise over the operating voltage range was completely explained in terms of the shot noise component for CR-(RC) 4 (pseudo-Gaussian) shaping at 3 μs shaping time and the noise component at 0 V bias (delta and thermal noise) added in quadrature. Irradiation with 1 Mev neutrons produced no significant degradation in leakage current and noise at fluences exceeding 4 x 10 14 cm -2 . Irradiation with 1.4 Mev proton fluence of 1 x 10 14 cm -2 decreased carrier lifetime by a factor of ∼4. Degradation in leakage current and noise became significant at proton fluence of ∼10 13 cm -2

  17. Coaxial foilless diode

    OpenAIRE

    Long Kong; QingXiang Liu; XiangQiang Li; ShaoMeng Wang

    2014-01-01

    A kind of coaxial foilless diode is proposed in this paper, with the structure model and operating principle of the diode are given. The current-voltage relation of the coaxial foilless diode and the effects of structure parameters on the relation are studied by simulation. By solving the electron motion equation, the beam deviation characteristic in the presence of external magnetic field in transmission process is analyzed, and the relationship between transverse misalignment with diode par...

  18. Long pulse diode experiments

    Science.gov (United States)

    McClenahan, Charles R.; Weber, Gerald J.; Omalley, Martin W.; Stewart, Joseph; Rinehart, Larry F.; Buttram, Malcolm T.

    1990-10-01

    A diode employing a thermionic cathode has produced 80 A beams at 200 kV for at least 6 microseconds. Moreover, the diode operates at rates as high as 1 Hz. EGUN simulations of the experimental geometry agree with the experiments. Finally, simulation of a proposed diode geometry predicts a 1 kA, 500 kV beam.

  19. Thin epitaxial silicon detectors

    International Nuclear Information System (INIS)

    Stab, L.

    1989-01-01

    Manufacturing procedures of thin epitaxial surface barriers will be given. Some improvements have been obtained: larger areas, lower leakage currents and better resolutions. New planar epitaxial dE/dX detectors, made in a collaboration work with ENERTEC-INTERTECHNIQUE, and a new application of these thin planar diodes to EXAFS measurements, made in a collaboration work with LURE (CNRS,CEA,MEN) will also be reported

  20. Semiconductor detectors in nuclear and particle physics

    International Nuclear Information System (INIS)

    Rehak, P.; Gatti, E.

    1992-01-01

    Semiconductor detectors for elementary particle physics and nuclear physics in the energy range above 1 GeV are briefly reviewed. In these two fields semiconductor detectors are used mainly for the precise position sensing. In a typical experiment, the position of a fast charged particle crossing a relatively thin semiconductor detector is measured. The position resolution achievable by semiconductor detectors is compared with the resolution achievable by gas filled position sensing detectors. Semiconductor detectors are divided into two groups: Classical semiconductor diode detectors and semiconductor memory detectors. Principles of the signal formation and the signal read-out for both groups of detectors are described. New developments of silicon detectors of both groups are reported

  1. Semiconductor detectors in nuclear and particle physics

    International Nuclear Information System (INIS)

    Rehak, P.; Gatti, E.

    1995-01-01

    Semiconductor detectors for elementary particle physics and nuclear physics in the energy range above 1 GeV are briefly reviewed. In these two fields semiconductor detectors are used mainly for the precise position sensing. In a typical experiment, the position of a fast charged particle crossing a relatively thin semiconductor detector is measured. The position resolution achievable by semiconductor detectors is compared with the resolution achievable by gas filled position sensing detectors. Semiconductor detectors are divided into two groups; (i) classical semiconductor diode detectors and (ii) semiconductor memory detectors. Principles of the signal formation and the signal read-out for both groups of detectors are described. New developments of silicon detectors of both groups are reported. copyright 1995 American Institute of Physics

  2. Radiation detectors

    International Nuclear Information System (INIS)

    2013-01-01

    This sixth chapter presents the operational principles of the radiation detectors; detection using photographic emulsions; thermoluminescent detectors; gas detectors; scintillation detectors; liquid scintillation detectors; detectors using semiconductor materials; calibration of detectors; Bragg-Gray theory; measurement chain and uncertainties associated to measurements

  3. Detection and dosimetry studies on the response of silicon diodes to an 241Am-Be source

    International Nuclear Information System (INIS)

    Lotfi, Y; Dizaji, H Zaki; Davani, F Abbasi

    2014-01-01

    Silicon diode detectors show potential for the development of an active personal dosimeter for neutron and photon radiation. Photons interact with the constituents of the diode detector and produce electrons. Fast neutrons interact with the constituents of the diode detector and converter, producing recoil nuclei and causing (n,α) and (n,p) reactions. These photon- and neutron-induced charged particles contribute to the response of diode detectors. In this work, a silicon pin diode was used as a detector to produce pulses created by photon and neutron. A polyethylene fast neutron converter was used as a recoil proton source in front of the detector. The total registered photon and neutron efficiency and the partial contributions of the efficiency, due to interactions with the diode and converter, were calculated. The results show that the efficiency of the converter-diode is a function of the incident photon and neutron energy. The optimized thicknesses of the converter for neutron detection and neutron dosimetry were found to be 1 mm and 0.1 mm respectively. The neutron records caused by the (n,α) and (n,p) reactions were negligible. The photon records were strongly dependent upon the energy and the depletion layer of the diode. The photons and neutrons efficiency of the diode-based dosimeter was calculated by the MCNPX code, and the results were in good agreement with experimental results for photons and neutrons from an 241 Am-Be source

  4. Study of PIN diode energy traps created by neutrons

    International Nuclear Information System (INIS)

    Sopko, V; Dammer, J; Sopko, B; Chren, D

    2013-01-01

    Characterization of radiation defects is still ongoing and finds greater application in the increasing radiation doses on semiconductor detectors in experiments. Studying the changes of silicon PIN diode for high doses of radiation is the fundamental motivation for our measurements. In this article we describe the behavior of the PIN diode and development of the disorder caused by neutrons from a 252Cf and doses up to 8 Gy. The calibration curve for PIN diode shows the effect of disorders as the changes of the voltampere characteristics depending on the dose of neutron irradiation. The measured values for defects are in good agreement with created energy traps.

  5. Development of a semiconductor neutron dosimeter with a PIN diode

    International Nuclear Information System (INIS)

    Kim, Seungho; Lee, Namho; Cho, Jaiwan; Youk, Geunuck

    2004-01-01

    When a Si PIN diode is exposed to fast neutrons, it produces displacement in Si lattice structure of the diode. Defects induced from structural dislocation become effective recombination centers for carriers which pass through the base of a PIN diode. Hence, increasing the resistivity of the diode decreases the current for the applied forward voltage. This paper involves the development of a neutron sensor based on the phenomena of the displacement effect damaged by neutron exposure. The neutron effect on the semiconductor was analyzed, and multi PIN diode arrays with various intrinsic layer (I layer) thicknesses and cross sections were fabricated. Under irradiation tests with a neutron beam, the manufactured diodes have good characteristics of linearity in a neutron irradiation experiment and give results that the increase of thickness of I layer and the decrease of the cross-section of the PIN diodes improve the sensitivity. Newly developed PIN diodes with a thicker I layer and various cross sections were retested and showed the best neutron sensitivity in the condition that the I layer thickness was similar to the length of a side of the cross-section. On the basis of two test results, final PIN diodes with a rectangular shape were manufactured and the characteristics for neutron detectors were analyzed through the neutron beam test using the on-line electronic dosimetry system. The developed PIN diode shows a good linearity to absorbed dose in the range of 0 to 1,000cGy (Tissue) and its neutron sensitivity is 13 mV/cGy at a constant current of 5 mA, that is three higher than that of similar commercially developed neutron detectors. Moreover the device shows less dependency on the orientation of the neutron beam and a considerable stability in an annealing test for a long period. (author)

  6. Coaxial foilless diode

    Energy Technology Data Exchange (ETDEWEB)

    Kong, Long; Liu, QingXiang; Li, XiangQiang; Wang, ShaoMeng [College of Physical Science and Technology, Southwest Jiaotong University, Chengdu 610031 (China)

    2014-05-15

    A kind of coaxial foilless diode is proposed in this paper, with the structure model and operating principle of the diode are given. The current-voltage relation of the coaxial foilless diode and the effects of structure parameters on the relation are studied by simulation. By solving the electron motion equation, the beam deviation characteristic in the presence of external magnetic field in transmission process is analyzed, and the relationship between transverse misalignment with diode parameters is obtained. These results should be of interest to the area of generation and propagation of radial beam for application of generating high power microwaves.

  7. Coaxial foilless diode

    Directory of Open Access Journals (Sweden)

    Long Kong

    2014-05-01

    Full Text Available A kind of coaxial foilless diode is proposed in this paper, with the structure model and operating principle of the diode are given. The current-voltage relation of the coaxial foilless diode and the effects of structure parameters on the relation are studied by simulation. By solving the electron motion equation, the beam deviation characteristic in the presence of external magnetic field in transmission process is analyzed, and the relationship between transverse misalignment with diode parameters is obtained. These results should be of interest to the area of generation and propagation of radial beam for application of generating high power microwaves.

  8. Low-threshold amplitude discriminator circuit with tunnel diode and two transistors in differential connection

    International Nuclear Information System (INIS)

    Ryba, J.; Volny, J.

    1973-01-01

    The connection is designed of a low-threshold amplitude discriminator and a tunnel diode with two transistors in differential connection. The discriminator is by its simple connection, its low consumption and high temperature stability suitable especially for portable radiation detectors. The tunnel diode is connected by one pole to a collector clamp and by the other to the supply voltage. A suitable resistor is connected in parallel with the tunnel diode to meet demands for higher sensitivity. (Z.S.)

  9. Development of high performance Schottky barrier diode and its application to plasma diagnostics

    International Nuclear Information System (INIS)

    Fujita, Junji; Kawahata, Kazuo; Okajima, Shigeki

    1993-10-01

    At the conclusion of the Supporting Collaboration Research on 'Development of High Performance Detectors in the Far Infrared Range' carried out from FY1990 to FY1992, the results of developing Schottky barrier diode and its application to plasma diagnostics are summarized. Some remarks as well as technical know-how for the correct use of diodes are also described. (author)

  10. Detectors - Electronics; Detecteurs - Electronique

    Energy Technology Data Exchange (ETDEWEB)

    Bregeault, J.; Gabriel, J.L.; Hierle, G.; Lebotlan, P.; Leconte, A.; Lelandais, J.; Mosrin, P.; Munsch, P.; Saur, H.; Tillier, J. [Lab. de Physique Corpusculaire, Caen Univ., 14 (France)

    1998-04-01

    The reports presents the main results obtained in the fields of radiation detectors and associated electronics. In the domain of X-ray gas detectors for the keV range efforts were undertaken to rise the detector efficiency. Multiple gap parallel plate chambers of different types as well as different types of X {yields} e{sup -} converters were tested to improve the efficiency (values of 2.4% at 60 KeV were reached). In the field of scintillators a study of new crystals has been carried out (among which Lutetium orthosilicate). CdTe diode strips for obtaining X-ray imaging were studied. The complete study of a linear array of 8 CdTe pixels has been performed and certified. The results are encouraging and point to this method as a satisfying solution. Also, a large dimension programmable chamber was used to study the influence of temperature on the inorganic scintillators in an interval from -40 deg. C to +150 deg. C. Temperature effects on other detectors and electronic circuits were also investigated. In the report mentioned is also the work carried out for the realization of the DEMON neutron multidetector. For neutron halo experiments different large area Si detectors associated with solid and gas position detectors were realized. In the frame of a contract with COGEMA a systematic study of Li doped glasses was undertaken aiming at replacing with a neutron probe the {sup 3}He counters presently utilized in pollution monitoring. An industrial prototype has been realised. Other studies were related to integrated analog chains, materials for Cherenkov detectors, scintillation probes for experiments on fundamental processes, gas position sensitive detectors, etc. In the field of associated electronics there are mentioned the works related to the multidetector INDRA, data acquisition, software gamma spectrometry, automatic gas pressure regulation in detectors, etc

  11. Formation of a quasi-neutral region in Schottky diodes based on semi-insulating GaAs and the influence of the compensation mechanism on the particle detector performance

    CERN Document Server

    Rogalla, M

    1999-01-01

    A model for the electric field distribution beneath the Schottky contact in semi-insulating (SI) GaAs particle detectors is developed. The model is based on a field-enhanced electron capture of the EL2-defect. The influence of the compensation mechanism in SI-GaAs on the field distribution, leakage current density and charge collection properties of the detectors will be discussed. The detailed understanding allows then a device optimization. (author)

  12. Vortex diode jet

    Science.gov (United States)

    Houck, Edward D.

    1994-01-01

    A fluid transfer system that combines a vortex diode with a jet ejector to transfer liquid from one tank to a second tank by a gas pressurization method having no moving mechanical parts in the fluid system. The vortex diode is a device that has a high resistance to flow in one direction and a low resistance to flow in the other.

  13. Spectroscopic amplifier for pin diode

    International Nuclear Information System (INIS)

    Alonso M, M. S.; Hernandez D, V. M.; Vega C, H. R.

    2014-10-01

    The photodiode remains the basic choice for the photo-detection and is widely used in optical communications, medical diagnostics and field of corpuscular radiation. In detecting radiation it has been used for monitoring radon and its progeny and inexpensive spectrometric systems. The development of a spectroscopic amplifier for Pin diode is presented which has the following characteristics: canceler Pole-Zero (P/Z) with a time constant of 8 μs; constant gain of 57, suitable for the acquisition system; 4th integrator Gaussian order to waveform change of exponential input to semi-Gaussian output and finally a stage of baseline restorer which prevents Dc signal contribution to the next stage. The operational amplifier used is the TLE2074 of BiFET technology of Texas Instruments with 10 MHz bandwidth, 25 V/μs of slew rate and a noise floor of 17 nv/(Hz)1/2. The integrated circuit has 4 operational amplifiers and in is contained the total of spectroscopic amplifier that is the goal of electronic design. The results show like the exponential input signal is converted to semi-Gaussian, modifying only the amplitude according to the specifications in the design. The total system is formed by the detector, which is the Pin diode, a sensitive preamplifier to the load, the spectroscopic amplifier that is what is presented and finally a pulse height analyzer (Mca) which is where the spectrum is shown. (Author)

  14. Ultrastrong light-matter coupling in electrically doped microcavity organic light emitting diodes

    Energy Technology Data Exchange (ETDEWEB)

    Mazzeo, M., E-mail: marco.mazzeo@unisalento.it [Dipartimento di Matematica e Fisica “Ennio De Giorgi”, Università del Salento, Via Monteroni, 73100 Lecce (Italy); NNL, Istituto Nanoscienze - CNR, Via Arnesano, 73100 Lecce (Italy); Genco, A. [Dipartimento di Matematica e Fisica “Ennio De Giorgi”, Università del Salento, Via Monteroni, 73100 Lecce (Italy); Gambino, S. [NNL, Istituto Nanoscienze - CNR, Via Arnesano, 73100 Lecce (Italy); CBN, Istituto Italiano Tecnologia, Via Barsanti 1, 73010 Lecce (Italy); Ballarini, D.; Mangione, F.; Sanvitto, D. [NNL, Istituto Nanoscienze - CNR, Via Arnesano, 73100 Lecce (Italy); Di Stefano, O.; Patanè, S.; Savasta, S. [Dipartimento di Fisica e Scienze della Terra, Università di Messina, Viale F. Stagno d' Alcontres 31, 98166 Messina (Italy); Gigli, G. [Dipartimento di Matematica e Fisica “Ennio De Giorgi”, Università del Salento, Via Monteroni, 73100 Lecce (Italy); NNL, Istituto Nanoscienze - CNR, Via Arnesano, 73100 Lecce (Italy); CBN, Istituto Italiano Tecnologia, Via Barsanti 1, 73010 Lecce (Italy)

    2014-06-09

    The coupling of the electromagnetic field with an electronic transition gives rise, for strong enough light-matter interactions, to hybrid states called exciton-polaritons. When the energy exchanged between light and matter becomes a significant fraction of the material transition energy an extreme optical regime called ultrastrong coupling (USC) is achieved. We report a microcavity embedded p-i-n monolithic organic light emitting diode working in USC, employing a thin film of squaraine dye as active layer. A normalized coupling ratio of 30% has been achieved at room temperature. These USC devices exhibit a dispersion-less angle-resolved electroluminescence that can be exploited for the realization of innovative optoelectronic devices. Our results may open the way towards electrically pumped polariton lasers.

  15. Ionization detector

    International Nuclear Information System (INIS)

    Steele, D.S.

    1987-01-01

    An ionization detector having an array of detectors has, for example, grounding pads positioned in the spaces between some detectors (data detectors) and other detectors (reference detectors). The grounding pads are kept at zero electric potential, i.e. grounded. The grounding serves to drain away electrons and thereby prevent an unwanted accumulation of charge in the spaces, and cause the electric field lines to be more perpendicular to the detectors in regions near the grounding pads. Alternatively, no empty space is provided there being additional, grounded, detectors provided between the data and reference detectors. (author)

  16. Performance measurements of hybrid PIN diode arrays

    International Nuclear Information System (INIS)

    Jernigan, J.G.; Arens, J.F.; Collins, T.; Herring, J.; Shapiro, S.L.; Wilburn, C.D.

    1990-05-01

    We report on the successful effort to develop hybrid PIN diode arrays and to demonstrate their potential as components of vertex detectors. Hybrid pixel arrays have been fabricated by the Hughes Aircraft Co. by bump bonding readout chips developed by Hughes to an array of PIN diodes manufactured by Micron Semiconductor Inc. These hybrid pixel arrays were constructed in two configurations. One array format having 10 x 64 pixels, each 120 μm square, and the other format having 256 x 256 pixels, each 30 μm square. In both cases, the thickness of the PIN diode layer is 300 μm. Measurements of detector performance show that excellent position resolution can be achieved by interpolation. By determining the centroid of the charge cloud which spreads charge into a number of neighboring pixels, a spatial resolution of a few microns has been attained. The noise has been measured to be about 300 electrons (rms) at room temperature, as expected from KTC and dark current considerations, yielding a signal-to-noise ratio of about 100 for minimum ionizing particles. 4 refs., 13 figs

  17. Powerful infrared emitting diodes

    Directory of Open Access Journals (Sweden)

    Kogan L. M.

    2012-02-01

    Full Text Available Powerful infrared LEDs with emission wavelength 805 ± 10, 870 ± 20 and 940 ± 10 nm developed at SPC OED "OPTEL" are presented in the article. The radiant intensity of beam diode is under 4 W/sr in the continuous mode and under 100 W/sr in the pulse mode. The radiation power of wide-angle LEDs reaches 1 W in continuous mode. The external quantum efficiency of emission IR diodes runs up to 30%. There also has been created infrared diode modules with a block of flat Fresnel lenses with radiant intensity under 70 W/sr.

  18. Silicon detectors

    International Nuclear Information System (INIS)

    Klanner, R.

    1984-08-01

    The status and recent progress of silicon detectors for high energy physics is reviewed. Emphasis is put on detectors with high spatial resolution and the use of silicon detectors in calorimeters. (orig.)

  19. Production of intense negative ion beams in magnetically insulated diodes

    International Nuclear Information System (INIS)

    Lindenbaum, H.

    1988-01-01

    Production of intense negative ion beams in magnetically insulated diodes was studied in order to develop an understanding of this process by measuring the ion-beam parameters as a function of diode and cathode plasma conditions in different magnetically insulated diodes. A coral diode, a racetrack diode, and an annular diode were used. The UCI APEX pulse line, with a nominal output of 1MV, 140kA, was used under matched conditions with a pulse length of 50 nsec. Negative-ion intensity and divergence were measured with Faraday cups and CR-39 track detectors. Cathode plasma was produced by passive dielectric cathodes and later, by an independent plasma gun. Negative-ion currents had an intensity of a few A/cm 2 with a divergence ranging between a few tenths milliradians for an active TiH 2 plasma gun and 300 milliradians for a passive polyethelene cathode. Negative ions were usually emitted from a few hot spots on the cathode surface. These hot spots are believed to cause transverse electrical fields in the diode gap responsible for the beam divergence. Mass spectrometry measurements showed that the ion beam consists of mainly H - ions when using a polyethelene or a TiH 2 cathodes, and mainly of negative carbon ions when using a carbon cathode

  20. Low-cost radon detector

    International Nuclear Information System (INIS)

    Simon, W.E.; Powers, T.L.; Ernsberger, G.W.

    1989-01-01

    This patent describes a detector for alpha particles produced by radioactive decay in a test medium. It comprises: a solid state diode having a depletion layer disposed close enough to the test medium that alpha particles emitted in the test medium deposit energy in the depletion layer; a first amplifier connected to amplify a signal produced by the diode. The first amplifier being operable to produce an output pulse upon energy being deposited in the depletion layer; a second amplifier having at least one connection in common with the first amplifier. The second amplifier having inputs connected other than to the signal produced by the diode. Both the first and second amplifiers produce output pulses due to transients and only the first amplifier produces output pulses due to alpha particles; and means to sense output pulses occurring on the first amplifier only, and to ignore output pulses occurring on both the first and second amplifiers

  1. Investigation of MIM Diodes for RF Applications

    KAUST Repository

    Khan, Adnan

    2015-05-01

    Metal Insulator Metal (MIM) diodes that work on fast mechanism of tunneling have been used in a number of very high frequency applications such as (Infra-Red) IR detectors and optical Rectennas for energy harvesting. Their ability to operate under zero bias condition as well as the possibility of realizing them through printing makes them attractive for (Radio Frequency) RF applications. However, MIM diodes have not been explored much for RF applications. One reason preventing their widespread RF use is the requirement of a very thin oxide layer essential for the tunneling operation that requires sophisticated nano-fabrication processes. Another issue is that the reliability and stable performance of MIM diodes is highly dependent on the surface roughness of the metallic electrodes. Finally, comprehensive RF characterization has not been performed for MIM diodes reported in the literature, particularly from the perspective of their integration with antennas as well as their rectification abilities. In this thesis, various metal deposition methods such as sputtering, electron beam evaporation, and Atomic Layer Deposition (ALD) are compared in pursuit of achieving low surface roughness. It is worth mentioning here that MIM diodes realized through ALD method have been presented for the first time in this thesis. Amorphous metal alloy have also been investigated in terms of their low surface roughness. Zinc-oxide has been investigated for its suitability as a thin dielectric layer for MIM diodes. Finally, comprehensive RF characterization of MIM diodes has been performed in two ways: 1) by standard S-parameter methods, and 2) by investigating their rectification ability under zero bias operation. It is concluded from the Atomic Force Microscopy (AFM) imaging that surface roughness as low as sub 1 nm can be achieved reliably from crystalline metals such as copper and platinum. This value is comparable to surface roughness achieved from amorphous alloys, which are non

  2. Position sensitive detector with semiconductor and image electron tube comprising such a detector

    International Nuclear Information System (INIS)

    Roziere, Guy.

    1977-01-01

    This invention concerns a position sensitive detector comprising a semiconducting substrate. It also concerns the electron tubes in which the detector may be incorporated in order to obtain an image formed at the tube input by an incident flux of particles or radiation. When a charged particle or group of such particles, electrons in particular, enter the space charge region of an inversely biased semiconductor diode, the energy supplied by these particles releases in the diode a certain number of electron-hole pairs which move in the field existing in the area towards the diode contacts. A corresponding current arises in the connections of this diode which constitutes the signal corresponding to the incident energy. Such a tube or chain of tubes is employed in nuclear medicine for observing parts of the human body, particularly by gamma radiation [fr

  3. Powering laser diode systems

    CERN Document Server

    Trestman, Grigoriy A

    2017-01-01

    This Tutorial Text discusses the competent design and skilled use of laser diode drivers (LDDs) and power supplies (PSs) for the electrical components of laser diode systems. It is intended to help power-electronic design engineers during the initial design stages: the choice of the best PS topology, the calculation of parameters and components of the PS circuit, and the computer simulation of the circuit. Readers who use laser diode systems for research, production, and other purposes will also benefit. The book will help readers avoid errors when creating laser systems from ready-made blocks, as well as understand the nature of the "mystical failures" of laser diodes (and possibly prevent them).

  4. Magnetically insulated H- diodes

    International Nuclear Information System (INIS)

    Fisher, A.; Bystritskii, V.; Garate, E.; Prohaska, R.; Rostoker, N.

    1993-01-01

    At the Univ. of California, Irvine, the authors have been studying the production of intense H - beams using pulse power techniques for the past 7 years. Previously, current densities of H - ions for various diode designs at UCI have been a few A/cm 2 . Recently, they have developed diodes similar to the coaxial design of the Lebedev Physical Institute, Moscow, USSR, where current densities of up to 200 A/cm 2 were reported using nuclear activation of a carbon target. In experiments at UCI employing the coaxial diode, current densities of up to 35 A/cm 2 from a passive polyethylene cathode loaded with TiH 2 have been measured using a pinhole camera and CR-39 track recording plastic. The authors have also been working on a self-insulating, annular diode which can generate a directed beam of H - ions. In the annular diode experiments a plasma opening switch was used to provide a prepulse and a current path which self-insulated the diode. These experiments were done on the machine APEX, a 1 MV, 50 ns, 7 Ω pulseline with a unipolar negative prepulse of ∼ 100 kV and 400 ns duration. Currently, the authors are modifying the pulseline to include an external LC circuit which can generate a bipolar, 150 kV, 1 μs duration prepulse (similar prepulse characteristic as in the Lebedev Institute experiments cited above)

  5. Nonstandard Farey sequences in a realistic diode map

    International Nuclear Information System (INIS)

    Perez, G.; Sinha, S.; Cerdeira, H.

    1991-06-01

    We study a realistic coupled map system, modelling a p - i - n diode structure. As we vary the parameter corresponding to the (scaled) external potential in the model, the dynamics goes through a flip bifurcation and then a Hopf bifurcation, and as the parameter is increased further, we find evidence of a sequence of mode locked windows embedded in the quasiperiodic motion, with periodic attractors whose winding numbers p = p/q, are given by a Farey series. The interesting thing about this Farey sequence is that it is generated between two parent attractors with p = 2/7 and 2/8, where 2/8 implies two distinct coexisting attractors with p = 1/4, and the correct series is obtained only when we use parent winding number 2/8 and not 1/4. So unlike a regular Farey tree, p and q need not be relatively prime here, p = 2 x p/2 x q is permissible, where such attractors are actually comprised of two coexisting attractors with p = p/q. We also checked that the positions and widths of these windows exhibit well defined power law scaling. When the potential is increased further, the Farey windows still provide a ''skeleton'' for the dynamics, and within each window there is a host of other interesting dynamical features, including multiple forward and reverse Feigenbaum trees. (author). 15 refs, 7 figs

  6. n-GaAs/InGaP/p-GaAs core-multishell nanowire diodes for efficient light-to-current conversion

    Energy Technology Data Exchange (ETDEWEB)

    Gutsche, Christoph; Lysov, Andrey; Regolin, Ingo; Keller, Gregor; Prost, Werner; Tegude, Franz-Josef [Department of Solid-State Electronics and CeNIDE University of Duisburg-Essen, Duisburg (Germany); Braam, Daniel; Li, Zi-An; Geller, Martin; Spasova, Marina [Department of Experimental Physics and CeNIDE University of Duisburg-Essen, Duisburg (Germany)

    2012-03-07

    Heterostructure n-GaAs/InGaP/p-GaAs core-multishell nanowire diodes are synthesized by metal-organic vapor-phase epitaxy. This structure allows a reproducible, selective wet etching of the individual shells and therefore a simplified contacting of single nanowire p-i-n junctions. Nanowire diodes show leakage currents in a low pA range and at a high rectification ratio of 3500 (at {+-}1V). Pronounced electroluminescence at 1.4 eV is measured at room temperature and gives evidence of the device quality. Photocurrent generation is demonstrated at the complete area of the nanowire p-i-n junction by scanning photocurrent microscopy. A solar-conversion efficiency of 4.7%, an open-circuit voltage of 0.5 V and a fill factor of 52% are obtained under AM 1.5G conditions. These results will guide the development of nanowire-based photonic and photovoltaic devices. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  7. Development of X-ray diode with high performance

    International Nuclear Information System (INIS)

    Hou Lifei; Yang Gouhong; Liu Shenye; Wei Minxi; Yi Tao; Jiang Shao'en; Sun Kexu

    2011-01-01

    A new type of X-ray diode (XRD-II) with ultrafast response time was developed. XRD-II detector was improved on the basis of old XRD (XRD-I), and its performances were studied on the 8 ps laser facility. The results show that XRD-II has excellent high-Jantage tolerance (to 6 kV) and super-fast response time (rise time is about 40 ps, and full width at half maximum (FWHM) is about 80 ps when bias Jantage is 5 kV). The detector calibration was carried out on Beijing synchrotron radiation facility, which shows that the detector's sensitivity has not deteriorated. (authors)

  8. Laser tests of silicon detectors

    International Nuclear Information System (INIS)

    Dolezal, Zdenek; Escobar, Carlos; Gadomski, Szymon; Garcia, Carmen; Gonzalez, Sergio; Kodys, Peter; Kubik, Petr; Lacasta, Carlos; Marti, Salvador; Mitsou, Vasiliki A.; Moorhead, Gareth F.; Phillips, Peter W.; Reznicek, Pavel; Slavik, Radan

    2007-01-01

    This paper collects experiences from the development of a silicon sensor laser testing setup and from tests of silicon strip modules (ATLAS End-cap SCT), pixel modules (DEPFET) and large-area diodes using semiconductor lasers. Lasers of 1060 and 680 nm wavelengths were used. A sophisticated method of focusing the laser was developed. Timing and interstrip properties of modules were measured. Analysis of optical effects involved and detailed discussion about the usability of laser testing for particle detectors are presented

  9. Large volume cryogenic silicon detectors

    International Nuclear Information System (INIS)

    Braggio, C.; Boscardin, M.; Bressi, G.; Carugno, G.; Corti, D.; Galeazzi, G.; Zorzi, N.

    2009-01-01

    We present preliminary measurements for the development of a large volume silicon detector to detect low energy and low rate energy depositions. The tested detector is a one cm-thick silicon PIN diode with an active volume of 31 cm 3 , cooled to the liquid helium temperature to obtain depletion from thermally-generated free carriers. A thorough study has been done to show that effects of charge trapping during drift disappears at a bias field value of the order of 100V/cm.

  10. Large volume cryogenic silicon detectors

    Energy Technology Data Exchange (ETDEWEB)

    Braggio, C. [Dipartimento di Fisica, Universita di Padova, via Marzolo 8, 35131 Padova (Italy); Boscardin, M. [Fondazione Bruno Kessler (FBK), via Sommarive 18, I-38100 Povo (Italy); Bressi, G. [INFN sez. di Pavia, via Bassi 6, 27100 Pavia (Italy); Carugno, G.; Corti, D. [INFN sez. di Padova, via Marzolo 8, 35131 Padova (Italy); Galeazzi, G. [INFN lab. naz. Legnaro, viale dell' Universita 2, 35020 Legnaro (Italy); Zorzi, N. [Fondazione Bruno Kessler (FBK), via Sommarive 18, I-38100 Povo (Italy)

    2009-12-15

    We present preliminary measurements for the development of a large volume silicon detector to detect low energy and low rate energy depositions. The tested detector is a one cm-thick silicon PIN diode with an active volume of 31 cm{sup 3}, cooled to the liquid helium temperature to obtain depletion from thermally-generated free carriers. A thorough study has been done to show that effects of charge trapping during drift disappears at a bias field value of the order of 100V/cm.

  11. Ampfion-hybrid diode on the Cornell LION accelerator

    International Nuclear Information System (INIS)

    Rondeau, G.D.; Greenly, J.B.; Hammer, D.A.

    1984-01-01

    An ampfion hybrid diode, previously run on the HYDRAMITE accelerator at Sandia National Laboratories has recently been installed on the Cornell LION accelerator (1 TW, 1.8 MV, 40 ns pulse). The ampfion hybrid diode is magnetically insulated by means of a field coil in series with the cathode structure of the diode. An epoxy dielectric flashboard on the anode provides an anode plasma to supply the extracted ions. The diode has a geometric focal length of 20 cm. The experiment is equipped with plasma erosion opening switches on the anode stock to eliminate prepulse and improve the generator voltage risetime. Diagnostics include magnetic pickup loops to measure currents in the diode structure and non-neutral beam currents, biased charge collectors, and damage targets. An alpha particle pin hole camera utilizing the p,α reaction of fast (>500 kV) protons on boron or lithium is being developed to measure focus quality and proton current. Plastic track detector will be used to image the alpha particles coming from a boron or lithium target. A second pin hole camera uses a plastic scintillator and light detector to give time resolved focused ion intensity

  12. X-ray Peltier cooled detectors for X-ray fluorescence analysis

    International Nuclear Information System (INIS)

    Loupilov, A.; Sokolov, A.; Gostilo, V.

    2001-01-01

    The recent results on development of X-ray Si(Li), Si-planar and CdTe p-i-n detectors cooled by Peltier coolers for fabrication of laboratory and portable XRF analysers for different applications are discussed. Low detection limits of XRF analysers are provided by increasing of detectors sensitive surface; improvement of their spectrometrical characteristics; decreasing of front-end-electronics noise level; Peltier coolers and vacuum chambers cooling modes optimization. Solution of all mentioned tasks allowed to develop Peltier cooled detectors with the following performances: (1.) Si(Li) detectors: S=20 mm 2 , thickness=3.5 mm, 175 eV (5.9 keV), 430 eV (59.6 keV); S=100 mm 2 ; thickness=4.5 mm, 270 eV (5.9 keV), 485 eV (59.6 keV). (2.) Si-planar detector: S=10 mm 2 , thickness=0.4 mm, 230 eV (5.9 keV), 460 eV (59.6 keV). (3.) CdTe p-i-n detectors: S=16 mm 2 , thickness=0.5 mm, 350 eV (5.9 keV), 585 eV (59.6 keV). S=16 mm 2 , thickness=1.2 mm, 310 eV (5.9 keV), 600 eV (59.6 keV). Advantages and disadvantages of all types of detectors for X-ray fluorescence analysis are compared. Spectra are presented. Application of different XRF analysers based on developed detectors in medicine, environmental science, industry, cryminalistics and history of art are demonstrated

  13. X-ray Peltier cooled detectors for X-ray fluorescence analysis

    International Nuclear Information System (INIS)

    Loupilov, A.; Sokolov, A.; Gostilo, V.

    2000-01-01

    The recent results on development of X-ray Si(Li), Si-planar and CdTe p-i- n detectors cooled by Peltier coolers for fabrication of laboratory and portable XRF analysers for different applications are discussed. Low detection limits of XRF analysers are provided by increasing of detectors sensitive surface; improvement of their spectrometrical characteristics; decreasing of front-end-electronics noise level; Peltier coolers and vacuum chambers cooling modes optimization. Solution of all mentioned tasks allowed to develop Peltier cooled detectors with the following performances: (1) Si(Li) detectors: S = 20 mm 2 , thickness = 3.5 mm, 175 eV (5.9 keV), 430 eV (59.6 keV); S = 100 mm 2 ; thickness = 4.5 mm, 270 eV (5.9 keV), 485 eV (59,6 keV). (2) Si-planar detector: S = 10 mm 2 , thickness = 0.4 mm, 230 eV (5.9 keV), 460 eV (59.6 keV). (3) CdTe p-i-n detectors: S = 16 mm 2 , thickness 0.5 mm, 350 eV (5.9 keV), 585 eV (59.6 keV). S = 16 mm 2 , thickness = 1.2 mm, 310 eV (5.9 keV), 600 eV (59.6 keV). Advantages and disadvantages of all types of detectors for X-ray fluorescence analysis are compared. Spectra are presented. Application of different XRF analysers based on developed detectors in medicine, environmental science, industry, criminalistics and history of art are demonstrated. (author)

  14. In vivo dosimetry with silicon diodes in total body irradiation

    International Nuclear Information System (INIS)

    Oliveira, F.F.; Amaral, L.L.; Costa, A.M.; Netto, T.G.

    2014-01-01

    The aim of this work is the characterization and application of silicon diode detectors for in vivo dosimetry in total body irradiation (TBI) treatments. It was evaluated the diode response with temperature, dose rate, gantry angulations and field size. A maximum response variation of 2.2% was obtained for temperature dependence. The response variation for dose rate and angular was within 1.2%. For field size dependence, the detector response increased with field until reach a saturation region, where no more primary radiation beam contributes for dose. The calibration was performed in a TBI setup. Different lateral thicknesses from one patient were simulated and then the calibration factors were determined by means of maximum depth dose readings. Subsequent to calibration, in vivo dosimetry measurements were performed. The response difference between diode readings and the prescribed dose for all treatments was below 4%. This difference is in agreement as recommended by the International Commission on Radiation Units and Measurements (ICRU), which is ±5%. The present work to test the applicability of a silicon diode dosimetry system for performing in vivo dose measurements in TBI techniques presented good results. These measurements demonstrated the value of diode dosimetry as a treatment verification method and its applicability as a part of a quality assurance program in TBI treatments. - Highlights: ► Characterization of a silicon diode dosimetry system. ► Application of the diodes for in vivo dosimetry in total body irradiation treatments. ► Implementation of in vivo dosimetry as a part of a quality assurance program in radiotherapy

  15. High-Performance Liquid Chromatography with Diode Array Detector and Electrospray Ionization Ion Trap Time-of-Flight Tandem Mass Spectrometry to Evaluate Ginseng Roots and Rhizomes from Different Regions.

    Science.gov (United States)

    Wang, Hong-Ping; Zhang, You-Bo; Yang, Xiu-Wei; Yang, Xin-Bao; Xu, Wei; Xu, Feng; Cai, Shao-Qing; Wang, Ying-Ping; Xu, Yong-Hua; Zhang, Lian-Xue

    2016-05-09

    Ginseng, Panax ginseng C. A. Meyer, is an industrial crop in China and Korea. The functional components in ginseng roots and rhizomes are characteristic ginsenosides. This work developed a new high-performance liquid chromatography coupled with electrospray ionization ion trap time-of-flight multistage mass spectrometry (LC-ESI-IT-TOF-MS(n)) method to identify the triterpenoids. Sixty compounds (1-60) including 58 triterpenoids were identified from the ginseng cultivated in China. Substances 1, 2, 7, 15-20, 35, 39, 45-47, 49, 55-57, 59, and 60 were identified for the first time. To evaluate the quality of ginseng cultivated in Northeast China, this paper developed a practical liquid chromatography-diode array detection (LC-DAD) method to simultaneously quantify 14 interesting ginsenosides in ginseng collected from 66 different producing areas for the first time. The results showed the quality of ginseng roots and rhizomes from different sources was different due to growing environment, cultivation technology, and so on. The developed LC-ESI-IT-TOF-MS(n) method can be used to identify many more ginsenosides and the LC-DAD method can be used not only to assess the quality of ginseng, but also to optimize the cultivation conditions for the production of ginsenosides.

  16. Transmutation detectors

    Energy Technology Data Exchange (ETDEWEB)

    Viererbl, L., E-mail: vie@ujv.c [Research Centre Rez Ltd. (Czech Republic); Nuclear Research Institute Rez plc (Czech Republic); Lahodova, Z. [Research Centre Rez Ltd. (Czech Republic); Nuclear Research Institute Rez plc (Czech Republic); Klupak, V. [Nuclear Research Institute Rez plc (Czech Republic); Sus, F. [Research Centre Rez Ltd. (Czech Republic); Nuclear Research Institute Rez plc (Czech Republic); Kucera, J. [Research Centre Rez Ltd. (Czech Republic); Nuclear Physics Institute, Academy of Sciences of the Czech Republic (Czech Republic); Kus, P.; Marek, M. [Research Centre Rez Ltd. (Czech Republic); Nuclear Research Institute Rez plc (Czech Republic)

    2011-03-11

    We have designed a new type of detectors, called transmutation detectors, which can be used primarily for neutron fluence measurement. The transmutation detector method differs from the commonly used activation detector method in evaluation of detector response after irradiation. Instead of radionuclide activity measurement using radiometric methods, the concentration of stable non-gaseous nuclides generated by transmutation in the detector is measured using analytical methods like mass spectrometry. Prospective elements and nuclear reactions for transmutation detectors are listed and initial experimental results are given. The transmutation detector method could be used primarily for long-term measurement of neutron fluence in fission nuclear reactors, but in principle it could be used for any type of radiation that can cause transmutation of nuclides in detectors. This method could also be used for measurement in accelerators or fusion reactors.

  17. Transmutation detectors

    International Nuclear Information System (INIS)

    Viererbl, L.; Lahodova, Z.; Klupak, V.; Sus, F.; Kucera, J.; Kus, P.; Marek, M.

    2011-01-01

    We have designed a new type of detectors, called transmutation detectors, which can be used primarily for neutron fluence measurement. The transmutation detector method differs from the commonly used activation detector method in evaluation of detector response after irradiation. Instead of radionuclide activity measurement using radiometric methods, the concentration of stable non-gaseous nuclides generated by transmutation in the detector is measured using analytical methods like mass spectrometry. Prospective elements and nuclear reactions for transmutation detectors are listed and initial experimental results are given. The transmutation detector method could be used primarily for long-term measurement of neutron fluence in fission nuclear reactors, but in principle it could be used for any type of radiation that can cause transmutation of nuclides in detectors. This method could also be used for measurement in accelerators or fusion reactors.

  18. Rapid screening of transferrin-binders in the flowers of Bauhinia blakeana Dunn by on-line high-performance liquid chromatography-diode-array detector-electrospray ionization-ion-trap-time-of-flight-mass spectrometry-transferrin-fluorescence detection system.

    Science.gov (United States)

    Liu, Meixian; Dong, Jing; Lin, Zongtao; Niu, Yanyan; Zhang, Xiaotian; Jiang, Haixiu; Guo, Ning; Li, Wei; Wang, Hong; Chen, Shizhong

    2016-06-10

    Transferrin (Transferrin, TRF, TF) has drawn increasing attention in cancer therapy due to its potential applications in drug delivery. TF receptor, highly expressed in tumor cells, recognizes and transports Fe(3+)-TF into cells to release iron into cytoplasm. Thus, discovering TF-binding compounds has become an active research area and is of great importance for target therapy. In this study, an on-line analysis method was established for screening TF-binding compounds from the flowers of Bauhinia blakeana Dunn using a high-performance liquid chromatography-diode-array detector-multi-stage mass spectrometry-transferrin-fluorescence detector (HPLC-DAD-MS(n)-TF-FLD) method. As a result, 33 of 80 identified or tentatively characterized compounds in the sample were TF-binding active. Twenty-five flavonol glycosides and eight phenolic acids were identified as TF-binders. Twelve of these active compounds together with six standard compounds were used to study the dose-response effects and structure-activity relationships of flavonoids and phenolic acids. The method was validated by vitexin with a good linearity in the range of concentrations used in the study. The limit of detection for vitexin was 0.1596 nmol. Our study indicated that the established method is simple, rapid and sensitive for screening TF-binding active compounds in the extract of Bauhinia blakeana Dunn, and therefore is important for discovering potential anti-cancer ingredients from complex samples for TF related drug delivery. Copyright © 2016 Elsevier B.V. All rights reserved.

  19. Daily check of the electron beams with a diode system

    Energy Technology Data Exchange (ETDEWEB)

    Pilette, P [Hospital Civil de Charleroi (Belgium). Centre for Radiotherapy

    1995-12-01

    A fast systems to check all the accelerator beams on a daily basis has been developed. A cheap home-made detector, based on non-medical diodes (type 1N5408), has been used since July 1992 to verify all the electron beams every day. The relative energy and Top-cGy correspondence is verified with one single irradiation of less than 1 minute by 6 diodes fixed in a polystyrene phantom. The principle of construction, software implementation and results are presented.

  20. Epitaxial silicon semiconductor detectors, past developments, future prospects

    International Nuclear Information System (INIS)

    Gruhn, C.R.

    1976-01-01

    A review of the main physical characteristics of epitaxial silicon as it relates to detector development is presented. As examples of applications results are presented on (1) epitaxial silicon avalanche diodes (ESAD); signal-to-noise, non-linear aspects of the avalanche gain mechanism, gain-bandwidth product, (2) ultrathin epitaxial silicon surface barrier (ESSB) detectors, response to heavy ions, (3) an all-epitaxial silicon diode (ESD), response to heavy ions, charge transport and charge defect. Future prospects of epitaxial silicon as it relates to new detector designs are summarized

  1. Evaluating the Antibacterial Properties of Polyacetylene and Glucosinolate Compounds with Further Identification of Their Presence within Various Carrot (Daucus carota) and Broccoli (Brassica oleracea) Cultivars Using High-Performance Liquid Chromatography with a Diode Array Detector and Ultra Performance Liquid Chromatography-Tandem Mass Spectrometry Analyses.

    Science.gov (United States)

    Hinds, L; Kenny, O; Hossain, M B; Walsh, D; Sheehy, E; Evans, P; Gaffney, M; Rai, D K

    2017-08-23

    Ongoing consumer concerns over using synthetic additives in foods has strongly influenced efforts worldwide to source suitable natural alternatives. In this study, the antibacterial efficacy of polyacetylene and glucosinolate compounds was evaluated against both Gram positive and Gram negative bacterial strains. Falcarinol [minimum inhibitory concentration (MIC) = 18.8-37.6 μg/mL] demonstrated the best overall antibacterial activity, while sinigrin (MIC = 46.9-62.5 μg/mL) was the most active glucosinolate compound. High-performance liquid chromatography with a diode array detector analysis showed falcarinol [85.13-244.85 μg/g of dry weight (DW)] to be the most abundant polyacetylene within six of the eight carrot (Daucus carota) cultivars investigated. Meanwhile, sinigrin (100.2-244.3 μg/g of DW) was the most abundant glucosinolate present within the majority of broccoli (Brassica oleracea) cultivars investigated using ultra performance liquid chromatography-tandem mass spectrometry analysis. The high abundance of both falcarinol and sinigrin within these respective species suggests that they could serve as potential sources of natural antibacterial agents for use as such in food products.

  2. Diode laser pumping

    International Nuclear Information System (INIS)

    Skagerlund, L.E.

    1975-01-01

    A diode laser is pumped or pulsed by a repeated capacitive discharge. A capacitor is periodically charged from a dc voltage source via a transformer, the capacitor being discharged through the diode laser via a controlled switching means after one or more charging periods. During a first interval of each charging period the transformer, while unloaded, stores a specific amount of energy supplied from the dc voltage source. During a subsequent interval of the charging period said specific amount of energy is transmitted from the transformer to the capacitor. The discharging of the capacitor takes place during a first interval of a charging period. (auth)

  3. Detector to detector corrections: a comprehensive experimental study of detector specific correction factors for beam output measurements for small radiotherapy beams

    DEFF Research Database (Denmark)

    Azangwe, Godfrey; Grochowska, Paulina; Georg, Dietmar

    2014-01-01

    -doped aluminium oxide (Al2O3:C), organic plastic scintillators, diamond detectors, liquid filled ion chamber, and a range of small volume air filled ionization chambers (volumes ranging from 0.002 cm3 to 0.3 cm3). All detector measurements were corrected for volume averaging effect and compared with dose ratios...... measurements, the authors recommend the use of detectors that require relatively little correction, such as unshielded diodes, diamond detectors or microchambers, and solid state detectors such as alanine, TLD, Al2O3:C, or scintillators....

  4. Application of spherical diodes for megavoltage photon beams dosimetry

    International Nuclear Information System (INIS)

    Barbés, Benigno; Azcona, Juan D.; Burguete, Javier; Martí-Climent, Josep M.

    2014-01-01

    Purpose: External beam radiation therapy (EBRT) usually uses heterogeneous dose distributions in a given volume. Designing detectors for quality control of these treatments is still a developing subject. The size of the detectors should be small to enhance spatial resolution and ensure low perturbation of the beam. A high uniformity in angular response is also a very important feature in a detector, because it has to measure radiation coming from all the directions of the space. It is also convenient that detectors are inexpensive and robust, especially to performin vivo measurements. The purpose of this work is to introduce a new detector for measuring megavoltage photon beams and to assess its performance to measure relative dose in EBRT. Methods: The detector studied in this work was designed as a spherical photodiode (1.8 mm in diameter). The change in response of the spherical diodes is measured regarding the angle of incidence, cumulated irradiation, and instantaneous dose rate (or dose per pulse). Additionally, total scatter factors for large and small fields (between 1 × 1 cm 2 and 20 × 20 cm 2 ) are evaluated and compared with the results obtained from some commercially available ionization chambers and planar diodes. Additionally, the over-response to low energy scattered photons in large fields is investigated using a shielding layer. Results: The spherical diode studied in this work produces a high signal (150 nC/Gy for photons of nominal energy of 15 MV and 160 for 6 MV, after 12 kGy) and its angular dependence is lower than that of planar diodes: less than 5% between maximum and minimum in all directions, and 2% around one of the axis. It also has a moderated variation with accumulated dose (about 1.5%/kGy for 15 MV photons and 0.7%/kGy for 6 MV, after 12 kGy) and a low variation with dose per pulse (±0.4%), and its behavior is similar to commercial diodes in total scatter factor measurements. Conclusions: The measurements of relative dose using

  5. Application of spherical diodes for megavoltage photon beams dosimetry.

    Science.gov (United States)

    Barbés, Benigno; Azcona, Juan D; Burguete, Javier; Martí-Climent, Josep M

    2014-01-01

    External beam radiation therapy (EBRT) usually uses heterogeneous dose distributions in a given volume. Designing detectors for quality control of these treatments is still a developing subject. The size of the detectors should be small to enhance spatial resolution and ensure low perturbation of the beam. A high uniformity in angular response is also a very important feature in a detector, because it has to measure radiation coming from all the directions of the space. It is also convenient that detectors are inexpensive and robust, especially to perform in vivo measurements. The purpose of this work is to introduce a new detector for measuring megavoltage photon beams and to assess its performance to measure relative dose in EBRT. The detector studied in this work was designed as a spherical photodiode (1.8 mm in diameter). The change in response of the spherical diodes is measured regarding the angle of incidence, cumulated irradiation, and instantaneous dose rate (or dose per pulse). Additionally, total scatter factors for large and small fields (between 1 × 1 cm(2) and 20 × 20 cm(2)) are evaluated and compared with the results obtained from some commercially available ionization chambers and planar diodes. Additionally, the over-response to low energy scattered photons in large fields is investigated using a shielding layer. The spherical diode studied in this work produces a high signal (150 nC/Gy for photons of nominal energy of 15 MV and 160 for 6 MV, after 12 kGy) and its angular dependence is lower than that of planar diodes: less than 5% between maximum and minimum in all directions, and 2% around one of the axis. It also has a moderated variation with accumulated dose (about 1.5%/kGy for 15 MV photons and 0.7%/kGy for 6 MV, after 12 kGy) and a low variation with dose per pulse (± 0.4%), and its behavior is similar to commercial diodes in total scatter factor measurements. The measurements of relative dose using the spherical diode described in this

  6. Detector Unit

    CERN Multimedia

    1960-01-01

    Original detector unit of the Instituut voor Kernfysisch Onderzoek (IKO) BOL project. This detector unit shows that silicon detectors for nuclear physics particle detection were already developed and in use in the 1960's in Amsterdam. Also the idea of putting 'strips' onto the silicon for high spatial resolution of a particle's impact on the detector were implemented in the BOL project which used 64 of these detector units. The IKO BOL project with its silicon particle detectors was designed, built and operated from 1965 to roughly 1977. Detector Unit of the BOL project: These detectors, notably the ‘checkerboard detector’, were developed during the years 1964-1968 in Amsterdam, The Netherlands, by the Natuurkundig Laboratorium of the N.V. Philips Gloeilampen Fabrieken. This was done in close collaboration with the Instituut voor Kernfysisch Onderzoek (IKO) where the read-out electronics for their use in the BOL Project was developed and produced.

  7. Detector trends

    International Nuclear Information System (INIS)

    Charpak, G.

    1986-01-01

    The author describes briefly the development of detectors for high energy physics experiments. Especially considered are semiconductor microstrip detectors, drift tubes, holographic bubble chambers, scintillating fiber optics, and calorimeters. (HSI).

  8. Infrared detectors

    CERN Document Server

    Rogalski, Antonio

    2010-01-01

    This second edition is fully revised and reorganized, with new chapters concerning third generation and quantum dot detectors, THz detectors, cantilever and antenna coupled detectors, and information on radiometry and IR optics materials. Part IV concerning focal plane arrays is significantly expanded. This book, resembling an encyclopedia of IR detectors, is well illustrated and contains many original references … a really comprehensive book.-F. Sizov, Institute of Semiconductor Physics, National Academy of Sciences, Kiev, Ukraine

  9. In 0.35Ga 0.65P light-emitting diodes grown by gas-source MBE

    Science.gov (United States)

    Masselink, W. Ted; Zachau, Martin

    1993-02-01

    This paper describes the growth and optical characteristics of In yGa 1- yP with 0.3Raman spectra of these undoped films and observe strong excitonic luminescence over the entire composition range investigated. The band gap derived from the luminescence excitation spectra corresponds to that of a fully relaxed InGaP film with no residual strain, which is confirmed by the Raman measurements. Light-emitting diodes with peak (300 K) emission centered at less than 590 nm have been fabricated from p-i-n junctions in In 0.35Ga 0.65P. This alloy is close to that with the largest direct band gap in the In yGa 1- y P system and has lattice mismatch from the GaAs substrate of 1%.

  10. Characterization of 3D-DDTC detectors on p-type substrates

    CERN Document Server

    Betta, G -F Dalla; Bosisio, Luciano; Darbo, Giovanni; Gabos, Paolo; Gemme, Claudia; Koehler, Michael; La Rosa, Alessandro; Parzefall, Ulrich; Pernegger, Heinz; Piemonte, Claudio; Povoli, Marco; Rachevskaia, Irina; Ronchin, Sabina; Wiik, Liv; Zoboli, Aanrea; Zorzi, Nicola

    2009-01-01

    We report on the electrical and functional characterization of 3D Double-side, Double-Type-Column (3D- DDTC) detectors fabricated on p-type substrates. Results relevant to detectors in the diode, strip and pixel configurations are presented, and demonstrate a clear improvement in the charge collection performance compared to the first prototypes of these detectors.

  11. Diode lasers and arrays

    International Nuclear Information System (INIS)

    Streifer, W.

    1988-01-01

    This paper discusses the principles of operation of III-V semiconductor diode lasers, the use of distributed feedback, and high power laser arrays. The semiconductor laser is a robust, miniature, versatile device, which directly converts electricity to light with very high efficiency. Applications to pumping solid-state lasers and to fiber optic and point-to-point communications are reviewed

  12. Deep diode atomic battery

    International Nuclear Information System (INIS)

    Anthony, T.R.; Cline, H.E.

    1977-01-01

    A deep diode atomic battery is made from a bulk semiconductor crystal containing three-dimensional arrays of columnar and lamellar P-N junctions. The battery is powered by gamma rays and x-ray emission from a radioactive source embedded in the interior of the semiconductor crystal

  13. Infrared diode laser spectroscopy

    Czech Academy of Sciences Publication Activity Database

    Civiš, Svatopluk; Cihelka, Jaroslav; Matulková, Irena

    2010-01-01

    Roč. 18, č. 4 (2010), s. 408-420 ISSN 1230-3402 R&D Projects: GA AV ČR IAA400400705 Institutional research plan: CEZ:AV0Z40400503 Keywords : FTIR spectroscopy * absorption spectroscopy * laser diodes Subject RIV: CF - Physical ; Theoretical Chemistry Impact factor: 1.027, year: 2010

  14. Design and experimental testing of air slab caps which convert commercial electron diodes into dual purpose, correction-free diodes for small field dosimetry.

    Science.gov (United States)

    Charles, P H; Cranmer-Sargison, G; Thwaites, D I; Kairn, T; Crowe, S B; Pedrazzini, G; Aland, T; Kenny, J; Langton, C M; Trapp, J V

    2014-10-01

    Two diodes which do not require correction factors for small field relative output measurements are designed and validated using experimental methodology. This was achieved by adding an air layer above the active volume of the diode detectors, which canceled out the increase in response of the diodes in small fields relative to standard field sizes. Due to the increased density of silicon and other components within a diode, additional electrons are created. In very small fields, a very small air gap acts as an effective filter of electrons with a high angle of incidence. The aim was to design a diode that balanced these perturbations to give a response similar to a water-only geometry. Three thicknesses of air were placed at the proximal end of a PTW 60017 electron diode (PTWe) using an adjustable "air cap". A set of output ratios (ORDet (fclin) ) for square field sizes of side length down to 5 mm was measured using each air thickness and compared to ORDet (fclin) measured using an IBA stereotactic field diode (SFD). kQclin,Qmsr (fclin,fmsr) was transferred from the SFD to the PTWe diode and plotted as a function of air gap thickness for each field size. This enabled the optimal air gap thickness to be obtained by observing which thickness of air was required such that kQclin,Qmsr (fclin,fmsr) was equal to 1.00 at all field sizes. A similar procedure was used to find the optimal air thickness required to make a modified Sun Nuclear EDGE detector (EDGEe) which is "correction-free" in small field relative dosimetry. In addition, the feasibility of experimentally transferring kQclin,Qmsr (fclin,fmsr) values from the SFD to unknown diodes was tested by comparing the experimentally transferred kQclin,Qmsr (fclin,fmsr) values for unmodified PTWe and EDGEe diodes to Monte Carlo simulated values. 1.0 mm of air was required to make the PTWe diode correction-free. This modified diode (PTWeair) produced output factors equivalent to those in water at all field sizes (5-50 mm

  15. Single-Band and Dual-Band Infrared Detectors

    Science.gov (United States)

    Ting, David Z. (Inventor); Gunapala, Sarath D. (Inventor); Soibel, Alexander (Inventor); Nguyen, Jean (Inventor); Khoshakhlagh, Arezou (Inventor)

    2017-01-01

    Bias-switchable dual-band infrared detectors and methods of manufacturing such detectors are provided. The infrared detectors are based on a back-to-back heterojunction diode design, where the detector structure consists of, sequentially, a top contact layer, a unipolar hole barrier layer, an absorber layer, a unipolar electron barrier, a second absorber, a second unipolar hole barrier, and a bottom contact layer. In addition, by substantially reducing the width of one of the absorber layers, a single-band infrared detector can also be formed.

  16. Needle Type Solid State Detectors for In-Vivo Measurement of Tracer Activity

    Energy Technology Data Exchange (ETDEWEB)

    Lauber, A [AB Atomenergi, Nykoeping (Sweden); Wolgast, W [Univ. of Uppsala (Sweden). Inst. of Physiology and Medical Biophysics

    1970-07-15

    A set of miniature detector probes for in-vivo-measurement of beta and gamma tracer activity is described. The probes use a lithium-compensated p-i-n silicon detector as sensing element. The standard 'needle probe' contains a cylindrical detector 0.9 mm in diameter and 3 mm long, enclosed in a stainless steel tube 1.1 mm in outer diameter and with walls 0. 05 mm thick. For particular applications several modified types have been developed: probes with larger sensing elements, probes with extra thin walls for low-energy beta detection, probes with two or three sensing elements in the same needle and probes containing a movable sensing element. This report describes the construction and the properties of the different needle probes.

  17. Needle Type Solid State Detectors for In-Vivo Measurement of Tracer Activity

    International Nuclear Information System (INIS)

    Lauber, A.; Wolgast, W.

    1970-07-01

    A set of miniature detector probes for in-vivo-measurement of beta and gamma tracer activity is described. The probes use a lithium-compensated p-i-n silicon detector as sensing element. The standard 'needle probe' contains a cylindrical detector 0.9 mm in diameter and 3 mm long, enclosed in a stainless steel tube 1.1 mm in outer diameter and with walls 0. 05 mm thick. For particular applications several modified types have been developed: probes with larger sensing elements, probes with extra thin walls for low-energy beta detection, probes with two or three sensing elements in the same needle and probes containing a movable sensing element. This report describes the construction and the properties of the different needle probes

  18. Manipulating Ion Migration for Highly Stable Light-Emitting Diodes with Single-Crystalline Organometal Halide Perovskite Microplatelets.

    Science.gov (United States)

    Chen, Mingming; Shan, Xin; Geske, Thomas; Li, Junqiang; Yu, Zhibin

    2017-06-27

    Ion migration has been commonly observed as a detrimental phenomenon in organometal halide perovskite semiconductors, causing the measurement hysteresis in solar cells and ultrashort operation lifetimes in light-emitting diodes. In this work, ion migration is utilized for the formation of a p-i-n junction at ambient temperature in single-crystalline organometal halide perovskites. The junction is subsequently stabilized by quenching the ionic movement at a low temperature. Such a strategy of manipulating the ion migration has led to efficient single-crystalline light-emitting diodes that emit 2.3 eV photons starting at 1.8 V and sustain a continuous operation for 54 h at ∼5000 cd m -2 without degradation of brightness. In addition, a whispering-gallery-mode cavity and exciton-exciton interaction in the perovskite microplatelets have both been observed that can be potentially useful for achieving electrically driven laser diodes based on single-crystalline organometal halide perovskite semiconductors.

  19. Response of the diode scanditronix EFD-3D high-dose per pulse

    International Nuclear Information System (INIS)

    Sendon del Rio, J. R.; Polo Cezon, R.; Ayala Lazaro, R.; Garcia Hernandez, M. J.; San Miguel Avedillo, F.; Gomez Cores, S.; Jimenez Rojas, R.; Lopez Bote, M. A.

    2015-01-01

    We check that the sensitivity of a diode type p-ES-3G size decreases with increasing pulse electron beam in the range between 0.6 and 6 0.0 cGy / pulse. This effect stems from the detector, since we have isolated the saturation effects associated with electrometer, and its magnitude varies between similar but different nominal diodes sensitivities. We recommend evaluate the response of diode-electrometer set in the size range of working pulse, before use in an accelerator relative dosimetry. (Author)

  20. Thick and large area PIN diodes for hard X-ray astronomy

    CERN Document Server

    Ota, N; Sugizaki, M; Kaneda, M; Tamura, T; Ozawa, H; Kamae, T; Makishima, K; Takahashi, T; Tashiro, M; Fukazawa, Y; Kataoka, J; Yamaoka, K; Kubo, S; Tanihata, C; Uchiyama, Y; Matsuzaki, K; Iyomoto, N; Kokubun, M; Nakazawa, T; Kubota, A; Mizuno, T; Matsumoto, Y; Isobe, N; Terada, Y; Sugiho, M; Onishi, T; Kubo, H; Ikeda, H; Nomachi, M; Ohsugi, T; Muramatsu, M; Akahori, H

    1999-01-01

    Thick and large area PIN diodes for the hard X-ray astronomy in the 10-60 keV range are developed. To cover this energy range in a room temperature and in a low background environment, Si PIN junction diodes of 2 mm in thickness with 2.5 cm sup 2 in effective area were developed, and will be used in the bottom of the Phoswich Hard X-ray Detector (HXD), on-board the ASTRO-E satellite. Problems related to a high purity Si and a thick depletion layer during our development and performance of the PIN diodes are presented in detail.

  1. Diode pumped solid state laser by two diodes

    International Nuclear Information System (INIS)

    Li Mingzhong; Zhang Xiaomin; Liang Yue; Man Yongzai; Zhou Pizhang

    1995-01-01

    A Nd: YLF laser is pumped by home-made quantum well diode lasers. Datum of laser output energy 60 μJ and peak power 120 mw are observed at wavelength 1.047 μm. On the same pumping condition, the output power synchronously pumped by two diodes is higher than the total output power pumped by two diodes separately. The fluctuation is <3%. The results agree with theoretical analysis

  2. Mis-diode as a low-energy X- and γ-ray spectrometer

    International Nuclear Information System (INIS)

    Konova, A.

    1980-01-01

    Considered are main peculiarities of apparata called MIS-diods having metal-thin isolating semiconductor structure and used as detectors of low-energy gamma and X-ray radiation. Discussed are advantages of tunnel MIS-diods based on non-primitive carriers. Presented are results of experimental measurements carried out using system of metal-silion oxide-silicon with the oxide layer width of 10-25 A (silicon with acceptor concentration of 10 19 m -3 ). Data presented show that MIS-diods can be considered as diods with p-n - transition in which n + - region is an inversion layer near the semiconductor surface, and further a leant region is situated. When voltage is applied only the depth of the leant region changes. In case of high quality diods the leakage currents are very small. Results of the investigation performed show that MIS-diods with oxide film wiolth of 10-22 A (the film covering p-silicon with high specific resistance) can be used as spectrometers of low-energy photons having particularly high energetic solution at room temperature. An advantage of new diods is the reverse current significantly lower in comparison with that of usual detectors with the Schottky barrier

  3. Spin-Wave Diode

    Directory of Open Access Journals (Sweden)

    Jin Lan (兰金

    2015-12-01

    Full Text Available A diode, a device allowing unidirectional signal transmission, is a fundamental element of logic structures, and it lies at the heart of modern information systems. The spin wave or magnon, representing a collective quasiparticle excitation of the magnetic order in magnetic materials, is a promising candidate for an information carrier for the next-generation energy-saving technologies. Here, we propose a scalable and reprogrammable pure spin-wave logic hardware architecture using domain walls and surface anisotropy stripes as waveguides on a single magnetic wafer. We demonstrate theoretically the design principle of the simplest logic component, a spin-wave diode, utilizing the chiral bound states in a magnetic domain wall with a Dzyaloshinskii-Moriya interaction, and confirm its performance through micromagnetic simulations. Our findings open a new vista for realizing different types of pure spin-wave logic components and finally achieving an energy-efficient and hardware-reprogrammable spin-wave computer.

  4. SU-F-T-490: Separating Effects Influencing Detector Response in Small MV Photon Fields

    Energy Technology Data Exchange (ETDEWEB)

    Wegener, S; Sauer, O [University of Wuerzburg, Wuerzburg (Germany)

    2016-06-15

    Purpose: Different detector properties influence their responses especially in field sizes below the lateral electron range. Due to the finite active volume, the detector density and electron perturbation at other structural parts, the response factor is in general field size dependent. We aimed to visualize and separate the main effects contributing to detector behavior for a variety of detector types. This was achieved in an experimental setup, shielding the field center. Thus, effects caused by scattered radiation could be examined separately. Methods: Signal ratios for field sizes down to 8 mm (SSD 90 cm, water depth 10 cm) of a 6MV beam from a Siemens Primus LINAC were recorded with several detectors: PTW microDiamond and PinPoint ionization chamber, shielded diodes (PTW P-60008, IBA PFD and SNC Edge) and unshielded diodes (PTW E-60012 and IBA SFD). Measurements were carried out in open fields and with an aluminum pole of 4 mm diameter as a central block. The geometric volume effect was calculated from profiles obtained with Gafchromic EBT3 film, evaluated using FilmQA Pro software (Ashland, USA). Results: Volume corrections were 1.7% at maximum. After correction, in small open fields, unshielded diodes showed a lower response than the diamond, i.e. diamond detector over-response seems to be higher than that for unshielded diodes. Beneath the block, this behavior was amplified by a factor of 2. For the shielded diodes, the overresponse for small open fields could be confirmed. However their lateral response behavior was strongly type dependent, e.g. the signal ratio dropped from 1.02 to 0.98 for the P-60008 diode. Conclusion: The lateral detector response was experimentally examined. Detector volume and density alone do not fully account for the field size dependence of detector response. Detector construction details play a major role, especially for shielded diodes.

  5. Diode, transistor & fet circuits manual

    CERN Document Server

    Marston, R M

    2013-01-01

    Diode, Transistor and FET Circuits Manual is a handbook of circuits based on discrete semiconductor components such as diodes, transistors, and FETS. The book also includes diagrams and practical circuits. The book describes basic and special diode characteristics, heat wave-rectifier circuits, transformers, filter capacitors, and rectifier ratings. The text also presents practical applications of associated devices, for example, zeners, varicaps, photodiodes, or LEDs, as well as it describes bipolar transistor characteristics. The transistor can be used in three basic amplifier configuration

  6. Design and fabrication of metal-insulator-metal diode for high frequency applications

    Science.gov (United States)

    Azad, Ibrahim; Ram, Manoj K.; Goswami, D. Yogi; Stefanakos, Elias

    2017-02-01

    Metal-insulator-metal (MIM) diodes play significant role in high speed electronics where high frequency rectification is needed. Quantum based tunneling mechanism helps MIM diodes to rectify at high frequency signals. Rectenna, antenna coupled MIM diodes are becoming popular due to their potential use as IR detectors and energy harvesters. Because of small active area, MIM diodes could easily be incorporated into integrated circuits (IC's). The objective of the work is to design and develop MIM diodes for high frequency rectification. In this work, thin insulating layer of ZnO was fabricated using Langmuir-Blodgett (LB) technique which facilitates ultrathin thin, uniform and pinhole free fabrication of insulating layer. The ZnO layer was synthesized from organic precursor of zinc acetate layer. The optimization in the LB technique of fabrication process led to fabricate MIM diodes with high non-linearity and sensitivity. Moreover, the top and bottom electrodes as well as active area of the diodes were patterned using UV-tunneling conduction mechanism. The highest sensitivity of the diode was measured around 37 (A/W), and the rectification ratio was found around 36 under low applied bias at +/-100 mV.

  7. Experience from operating germanium detectors in GERDA

    Science.gov (United States)

    Palioselitis, Dimitrios; GERDA Collaboration

    2015-05-01

    Phase I of the Germanium Detector Array (GERDA) experiment, searching for the neutrinoless double beta (0νββ) decay of 76Ge, was completed in September 2013. The most competitive half-life lower limit for the 0νββ decay of 76Ge was set (T-0ν1/2 > 2.1 · 1025 yr at 90% C.L.). GERDA operates bare Ge diodes immersed in liquid argon. During Phase I, mainly refurbished semi-coaxial high purity Ge detectors from previous experiments were used. The experience gained with handling and operating bare Ge diodes in liquid argon, as well as the stability and performance of the detectors during GERDA Phase I are presented. Thirty additional new enriched BEGe-type detectors were produced and will be used in Phase II. A subgroup of these detectors has already been used successfully in GERDA Phase I. The present paper gives an overview of the production chain of the new germanium detectors, the steps taken to minimise the exposure to cosmic radiation during manufacturing, and the first results of characterisation measurements in vacuum cryostats.

  8. Experience from operating germanium detectors in GERDA

    International Nuclear Information System (INIS)

    Palioselitis, Dimitrios

    2015-01-01

    Phase I of the Germanium Detector Array (GERDA) experiment, searching for the neutrinoless double beta (0νββ) decay of 76 Ge, was completed in September 2013. The most competitive half-life lower limit for the 0νββ decay of 76 Ge was set (T- 0ν 1/2 > 2.1 · 10 25 yr at 90% C.L.). GERDA operates bare Ge diodes immersed in liquid argon. During Phase I, mainly refurbished semi-coaxial high purity Ge detectors from previous experiments were used. The experience gained with handling and operating bare Ge diodes in liquid argon, as well as the stability and performance of the detectors during GERDA Phase I are presented. Thirty additional new enriched BEGe-type detectors were produced and will be used in Phase II. A subgroup of these detectors has already been used successfully in GERDA Phase I. The present paper gives an overview of the production chain of the new germanium detectors, the steps taken to minimise the exposure to cosmic radiation during manufacturing, and the first results of characterisation measurements in vacuum cryostats. (paper)

  9. Thick amorphous silicon layers suitable for the realization of radiation detectors

    International Nuclear Information System (INIS)

    Hong, Wan-Shick; Drewery, J.S.; Jing, Tao; Lee, Hyong-Koo; Perez-Mendez, V.; Petrova-Koch, V.

    1995-04-01

    Thick silicon films with good electronic quality have been prepared by glow discharge of He-diluted SiH 4 at a substrate temperature ∼ 150 degree C and subsequent annealing at 160 degree C for about 100 hours. The stress in the films obtained this way decreased to ∼ 100 MPa compared to the 350 MPa in conventional a-Si:H. The post-annealing helped to reduce the ionized dangling bond density from 2.5 x 10 15 cm -3 to 7 x 10 14 cm -3 without changing the internal stress. IR spectroscopy and hydrogen effusion measurements implied the existence of microvoids and tiny crystallites in the material showing satisfactory electronic properties. P-I-N diodes for radiation detection applications have been realized out of the new material

  10. Cryogenic detectors

    International Nuclear Information System (INIS)

    Zehnder, A.

    1987-01-01

    Presently the development of new large scale detector systems, used in very high energy physics experiments, is very active. In the low energy range, the introduction of charge coupled devices allows improved spacial and energy resolution. In the keV region, high resolution can only be achieved via the well established diffraction spectrometers with the well-known disadvantage of a small throughput. There exist no efficient detectors for non-ionizing radiation such as coherent nuclear scattering of weakly interacting particles. The development of high resolution solid state detectors in the keV-region with the possibility of nuclear recoil detection is therefore highly desired. Such detectors applied in astro and particle physics would thus allow one to obtain new information not achievable otherwise. Three types of cryogenic detectors exist: Calorimeters/Bolometers. This type is sensitive to the produced excess phonons and measures the deposited energy by detecting the heat pulses. Excess charge carriers should be used to produce phonons. Tunneling junctions. This type is sensitive to excess charge produced by the Cooper pair breakup. Excess phonons should be used to break up Cooper pairs. Superheated superconducting granules (SSG). An SSG detector consists of granules, the metastability of which is disturbed by radiation. The Meissner effect then causes a change in the field distribution of the applied external field, which can be detected. The present paper discusses the basic principle of calorimetric and tunneling junction detectors and some of their applications. 26 refs., 7 figs., 1 tab

  11. Processes governing pinch formation in diodes

    International Nuclear Information System (INIS)

    Blaugrund, A.E.; Cooperstein, G.; Goldstein, S.A.

    1975-01-01

    The process of pinch formation in large aspect ratio diodes has been studied by means of streak photography and time-resolved x-ray detectors. A tight pinch is formed at the anode center by a collapsing thin hollow electron beam. The collapse velocity depends, among other things, on the type of material in the top 1 μm layer of the anode. In a tentative model it is assumed that an anode plasma is at least partially created from gases released from the surface layer of the anode by the heating action of the beam. These gases are ionized by primary, backscattered, and secondary electrons. Ions emitted from this plasma modify the electron trajectories in the diode leading to a radial collapse of the hollow electron beam. The observed monotonic dependence of the collapse velocity on the atomic number of the anode material can be explained by the smooth dependence on Z of both the specific heat and the electron backscatter coefficient. In the case of high-Z anodes the ion expansion time appears to be the factor limiting the collapse velocity. Detailed experimental data are presented

  12. Soft x-ray detection with diamond photoconductive detectors

    International Nuclear Information System (INIS)

    Kania, D.R.; Pan, L.; Kornblum, H.; Bell, P.; Landen, O.N.; Pianetta, P.

    1990-01-01

    Photoconductive detectors fabricated from natural lla diamonds have been used to measure the x-ray power emitted from laser produced plasmas. The detector was operated without any absorbing filters to distort the x-ray power measurement. The 5.5 eV bandgap of the detector material practically eliminates its sensitivity to scattered laser radiation thus permitting filterless operation. The detector response time or carrier life time was 90 ps. Excellent agreement was achieved between a diamond PCD and a multichannel photoemissive diode array in the measurement of radiated x-ray power and energy. 4 figs

  13. Hydrogen detector

    International Nuclear Information System (INIS)

    Kumagaya, Hiromichi; Yoshida, Kazuo; Sanada, Kazuo; Chigira, Sadao.

    1994-01-01

    The present invention concerns a hydrogen detector for detecting water-sodium reaction. The hydrogen detector comprises a sensor portion having coiled optical fibers and detects hydrogen on the basis of the increase of light transmission loss upon hydrogen absorption. In the hydrogen detector, optical fibers are wound around and welded to the outer circumference of a quartz rod, as well as the thickness of the clad layer of the optical fiber is reduced by etching. With such procedures, size of the hydrogen detecting sensor portion can be decreased easily. Further, since it can be used at high temperature, diffusion rate is improved to shorten the detection time. (N.H.)

  14. Focusing of a new germanium counter type : the composite detector. Uses of the TREFLE detector in the EUROGAM multidetector

    International Nuclear Information System (INIS)

    Han, L.

    1995-05-01

    The aim of this thesis is the development of new types of germanium detectors: the composite detectors. Two types of prototypes are then conceived: the stacked planar detector (EDP) and the assembly of coaxial diodes (TREFLE). They are designed for the multidetector EUROGAM destined to the research of nuclear structure at high angular momentum. The four planar diodes of EDP detector were of 7 cm diameter and of 15 to 20 mm thick. The difference between the calculated and measured photopic efficiency is observed. The importance of surface channel induces a weak resistance of neutron damages. The sputtering method for the surface treatment reducing the germanium dead layer as well as a rule of selection concerning the impurity concentration and the thickness of crystal is helpful for the later production of germanium detector. The CLOVER detector consist of for mean size crystals in the same cryostat. The photopic efficiency is much larger than that of the greatest monocrystal detector. And the granulation of composite detector allowed the Doppler broadening correction of gamma ray observed in the nuclear reaction where the recoil velocity is very high. This new type of detector enable the linear polarization measurement of gamma ray. Twenty-four CLOVER detector are actually mounted in the EUROGAM array. The characteristics measured in source as well as in beam, reported in this thesis, meet exactly the charge account. (author). 47 refs., 61 figs., 18 tabs

  15. Polymer light emitting diodes

    International Nuclear Information System (INIS)

    Gautier-Thianche, Emmmanuelle

    1998-01-01

    We study sandwich type semiconducting polymer light emitting diodes; anode/polymer/cathode. ITO is selected as anode, this polymer is a blend of a commercially available polymer with a high hole transport ability: polyvinyl-carbazole and a laser dye: coumarin-515. Magnesium covered with silver is chosen for the anode. We study the influence of polymer thickness and coumarin doping ratio on electroluminescence spectrum, electric characteristics and quantum efficiency. An important drawback is that diodes lifetime remains low. In the second part of our study we determine degradations causes with X-Ray reflectivity experiments. It may be due to ITO very high roughness. We realize a new type of planar electroluminescent device: a channel type electroluminescent device in which polymer layer is inserted into an aluminium channel. Such a device is by far more stable than using classical sandwich structures with the same polymer composition: indeed, charges are generated by internal-field ionization and there is no injection from the electrode to the polymer. This avoids electrochemical reactions at electrodes, thus reducing degradations routes. (author) [fr

  16. DUMAND detector

    CERN Multimedia

    This object is one of the 256 other detectors of the DUMAND (Deep Underwater Muon And Neutrino Detection) experiment. The goal of the experiment was the construction of the first deep ocean high energy neutrino detector, to be placed at 4800 m depth in the Pacific Ocean off Keahole Point on the Big Island of Hawaii. A few years ago, a European conference with Cosmic experiments was organized at CERN as they were projects like DUMAND in Hawaii. Along with the conference, a temporary exhibition was organised as well. It was a collaboration of institutions from Germany, Japan, Switzerland and the U.S.A. CERN had borrowed equipment and objects from different institutes around the world, including this detector of the DUMAND experiment. Most of the equipment were sent back to the institutes, however this detector sphere was offered to a CERN member of the personnel.

  17. Detector applications

    International Nuclear Information System (INIS)

    Pehl, R.H.

    1977-10-01

    Semiconductor detectors are now applied to a very wide range of problems. The combination of relatively low cost, excellent energy resolution, and simultaneous broad energy-spectrum analysis is uniquely suited to many applications in both basic and applied physics. Alternative techniques, such as magnetic spectrometers for charged-particle spectroscopy, while offering better energy resolution, are bulky, expensive, and usually far more difficult to use. Furthermore, they do not directly provide the broad energy-spectrum measurements easily accomplished using semiconductor detectors. Scintillation detectors, which are approximately equivalent to semiconductor detectors in convenience and cost, exhibit 10 to 100 times worse energy resolution. However, their high efficiency and large potential size recommend their use in some measurements

  18. Smoke detectors

    International Nuclear Information System (INIS)

    Bryant, J.; Howes, J.H.; Smout, D.W.S.

    1979-01-01

    A smoke detector is described which provides a smoke sensing detector and an indicating device and in which a radioactive substance is used in conjunction with two ionisation chambers. The system includes an outer electrode, a collector electrode and an inner electrode which is made of or supports the radioactive substance which, in this case, is 241 Am. The invention takes advantage of the fact that smoke particles can be allowed to enter freely the inner ionisation chamber. (U.K.)

  19. Radiation detector

    International Nuclear Information System (INIS)

    Gillies, W.

    1980-01-01

    The radiation detector for measuring e.g. a neutron flux consists of a central emitter, an insulating shell arranged around it, and a tube-shaped collector enclosing both. The emitter itself is composed of a great number of stranded, spiral wires of small diameter giving a defined flexibility to the detector. For emitter material Pt, Rh, V, Co, Ce, Os or Ta may be used. (DG) [de

  20. Split detector

    International Nuclear Information System (INIS)

    Cederstrand, C.N.; Chism, H.R.

    1982-01-01

    A gas analyzer is disclosed which provides a dual channel capability for the simultaneous determination of the presence and concentration of two gases in a stream of sample gas and which has a single infrared source, a single sample cell, two infrared bandpass filters, and two infrared detectors. A separator between the filters and detectors prevents interchange of radiation between the filters. The separator is positioned by fitting it in a slot

  1. Performance of semiconductor radiation sensors for simple and low-cost radiation detector

    International Nuclear Information System (INIS)

    Tanimura, Yoshihiko; Birumachi, Atsushi; Yoshida, Makoto; Watanabe, Tamaki

    2008-01-01

    In order to develop a simple but reliable radiation detector for the general public, photon detection performances of radiation sensors have been studied in photon calibration fields and by Monte Carlo simulations. A silicon p-i-n photodiode and a CdTe detector were selected for the low cost sensors. Their energy responses to ambient dose equivalent H * (10) were evaluated over the energy range from 60 keV to 2 MeV. The response of the CdTe decreases markedly with increasing photon energy. On the other hand, the photodiode has the advantage of almost flat response above 150 keV. The sensitivities of these sensors are 4 to 6 cpm for the natural radiation. Detection limits of the radiation level are low enough to know the extreme increase of radiation due to emergency situations of nuclear power plants, fuel treatment facilities and so on. (author)

  2. Tracking the NOvA Detectors' Performance

    Science.gov (United States)

    Psihas, Fernanda; NOvA Collaboration

    2016-03-01

    The NOvA experiment measures long baseline νμ -->νe oscillations in Fermilab's NuMI beam. We employ two detectors equipped with over 10 thousand sets of data-taking electronics; avalanche photo diodes and front end boards which collect and process the scintillation signal from particle interactions within the detectors. These sets of electronics -as well as the systems which power and cool them- must be monitored and maintained at precise working conditions to ensure maximal data-taking uptime, good data quality and a lasting life for our detectors. This poster describes the automated systems used on NOvA to simultaneously monitor our data quality, diagnose hardware issues, track our performance and coordinate maintenance for the detectors.

  3. Sensitivity of photodiode detector for industrial computed tomography

    International Nuclear Information System (INIS)

    Wang Jue; Chen Jiaoze; Chen Xufeng; Tan Hui

    2012-01-01

    Studying on sensitivity of detector has most guiding significance for the selecting of X-ray Energy, the designing of detector and matching between X-ray source and detector. Several major factors of sensitivity and their quantitative relation were studied. First, factors such as energy deposition rate, absolute scintillation efficiency, light collection efficiency and photoelectrical conversion efficiency were analyzed. Then, a simulation for energy deposition rate of scintillation crystal and light collection efficiency was carried out by Monte Carlo method. The fluorescence conversion efficiency of the CsI (Tl) scintillator and the photoelectric conversion efficiency of the photoelectric diode were computed. The concept of matching between the scintillator and the photoelectric diode was defined. Finally, the sensitivity expression with universal meaning of the detector was obtained. The maximum error between theoretical value and practical measurement result is less than 20.4%. The experiments show the validity and the accuracy of the computing method of the sensitivity. (authors)

  4. A multi-channel photometric detector for multi-component analysis in flow injection analysis.

    Science.gov (United States)

    Tan, A; Huang, J; Geng, L; Xu, J; Zhao, X

    1994-01-01

    The detector, a multi-channel photometric detector, described in this paper was developed using multi-wavelength LEDs (light emitting diode) and phototransistors for absorbance measurement controlled by an Intel 8031 8-bit single chip microcomputer. Up to four flow cells can be attached to the detector. The LEDs and phototransistors are both inexpensive, and reliable. The results given by the detector for simultaneous determination of trace amounts of cobalt and cadmium in zinc sulphate electrolyte are reported. Because of the newly developed detector, this approach employs much less hardware apparatus than by employing conventional photometric detectors.

  5. Poster - 20: Detector selection for commissioning of a Monte Carlo based electron dose calculation algorithm

    Energy Technology Data Exchange (ETDEWEB)

    Anusionwu, Princess [Medical Physics, CancerCare Manitoba, Winnipeg Canada (Canada); Department of Physics & Astronomy, University of Manitoba, Winnipeg Canada (Canada); Alpuche Aviles, Jorge E. [Medical Physics, CancerCare Manitoba, Winnipeg Canada (Canada); Pistorius, Stephen [Medical Physics, CancerCare Manitoba, Winnipeg Canada (Canada); Department of Physics & Astronomy, University of Manitoba, Winnipeg Canada (Canada); Department of Radiology, University of Manitoba, Winnipeg (Canada)

    2016-08-15

    Objective: Commissioning of a Monte Carlo based electron dose calculation algorithm requires percentage depth doses (PDDs) and beam profiles which can be measured with multiple detectors. Electron dosimetry is commonly performed with cylindrical chambers but parallel plate chambers and diodes can also be used. The purpose of this study was to determine the most appropriate detector to perform the commissioning measurements. Methods: PDDs and beam profiles were measured for beams with energies ranging from 6 MeV to 15 MeV and field sizes ranging from 6 cm × 6 cm to 40 cm × 40 cm. Detectors used included diodes, cylindrical and parallel plate ionization chambers. Beam profiles were measured in water (100 cm source to surface distance) and in air (95 cm source to detector distance). Results: PDDs for the cylindrical chambers were shallower (1.3 mm averaged over all energies and field sizes) than those measured with the parallel plate chambers and diodes. Surface doses measured with the diode and cylindrical chamber were on average larger by 1.6 % and 3% respectively than those of the parallel plate chamber. Profiles measured with a diode resulted in penumbra values smaller than those measured with the cylindrical chamber by 2 mm. Conclusion: The diode was selected as the most appropriate detector since PDDs agreed with those measured with parallel plate chambers (typically recommended for low energies) and results in sharper profiles. Unlike ion chambers, no corrections are needed to measure PDDs, making it more convenient to use.

  6. Characterization of a synthetic single crystal diamond Schottky diode for radiotherapy electron beam dosimetry.

    Science.gov (United States)

    Di Venanzio, C; Marinelli, Marco; Milani, E; Prestopino, G; Verona, C; Verona-Rinati, G; Falco, M D; Bagalà, P; Santoni, R; Pimpinella, M

    2013-02-01

    To investigate the dosimetric properties of synthetic single crystal diamond based Schottky diodes under irradiation with therapeutic electron beams from linear accelerators. A single crystal diamond detector was fabricated and tested under 6, 8, 10, 12, and 15 MeV electron beams. The detector performances were evaluated using three types of commercial detectors as reference dosimeters: an Advanced Markus plane parallel ionization chamber, a Semiflex cylindrical ionization chamber, and a p-type silicon detector. Preirradiation, linearity with dose, dose rate dependence, output factors, lateral field profiles, and percentage depth dose profiles were investigated and discussed. During preirradiation the diamond detector signal shows a weak decrease within 0.7% with respect to the plateau value and a final signal stability of 0.1% (1σ) is observed after about 5 Gy. A good linear behavior of the detector response as a function of the delivered dose is observed with deviations below ±0.3% in the dose range from 0.02 to 10 Gy. In addition, the detector response is dose rate independent, with deviations below 0.3% in the investigated dose rate range from 0.17 to 5.45 Gy∕min. Percentage depth dose curves obtained from the diamond detector are in good agreement with the ones from the reference dosimeters. Lateral beam profile measurements show an overall good agreement among detectors, taking into account their respective geometrical features. The spatial resolution of solid state detectors is confirmed to be better than that of ionization chambers, being the one from the diamond detector comparable to that of the silicon diode. A good agreement within experimental uncertainties was also found in terms of output factor measurements between the diamond detector and reference dosimeters. The observed dosimetric properties indicate that the tested diamond detector is a suitable candidate for clinical electron beam dosimetry.

  7. Time-of-flight measurements of heavy ions using Si PIN diodes

    Energy Technology Data Exchange (ETDEWEB)

    Strekalovsky, A. O., E-mail: alex.strek@bk.ru; Kamanin, D. V. [Joint Institute for Nuclear Research (Russian Federation); Pyatkov, Yu. V. [National Nuclear Research University MEPhI (Moscow Engineering Physics Institute) (Russian Federation); Kondratyev, N. A.; Zhuchko, V. E. [Joint Institute for Nuclear Research (Russian Federation); Ilić, S. [University of Novi Sad (Serbia); Alexandrov, A. A.; Alexandrova, I. A. [Joint Institute for Nuclear Research (Russian Federation); Jacobs, N. [University of Stellenbosch, Faculty of Military Science, Military Academy (South Africa); Kuznetsova, E. A.; Mishinsky, G. V.; Strekalovsky, O. V. [Joint Institute for Nuclear Research (Russian Federation)

    2016-12-15

    A new off-line timing method for PIN diode signals is presented which allows the plasma delay effect to be suppressed. Velocities of heavy ions measured by the new method are in good agreement within a wide range of masses and energies with velocities measured by time stamp detectors based on microchannel plates.

  8. Cosmic Ray Measurements by Scintillators with Metal Resistor Semiconductor Avalanche Photo Diodes

    Science.gov (United States)

    Blanco, Francesco; La Rocca, Paola; Riggi, Francesco; Akindinov, Alexandre; Mal'kevich, Dmitry

    2008-01-01

    An educational set-up for cosmic ray physics experiments is described. The detector is based on scintillator tiles with a readout through metal resistor semiconductor (MRS) avalanche photo diode (APD) arrays. Typical measurements of the cosmic angular distribution at sea level and a study of the East-West asymmetry obtained by such a device are…

  9. Atomic spectroscopy with diode lasers

    International Nuclear Information System (INIS)

    Tino, G.M.

    1994-01-01

    Some applications of semiconductor diode lasers in atomic spectroscopy are discussed by describing different experiments performed with lasers emitting in the visible and in the near-infrared region. I illustrate the results obtained in the investigation of near-infrared transitions of atomic oxygen and of the visible intercombination line of strontium. I also describe how two offset-frequency-locked diode lasers can be used to excite velocity selective Raman transitions in Cs. I discuss the spectral resolution, the accuracy of frequency measurements, and the detection sensitivity achievable with diode lasers. (orig.)

  10. Laser amplitude stabilization for advanced interferometric gravitational wave detectors

    International Nuclear Information System (INIS)

    Barr, B W; Strain, K A; Killow, C J

    2005-01-01

    We present results of experiments into the stabilization of the amplitude of Nd:YAG lasers for use in advanced gravitational wave detectors. By feeding back directly to the pump-diode driving current we achieved shot-noise-limited stabilization at frequencies up to several kHz with some residual noise at lower frequencies (sub ∼100 Hz). The method used is applicable to higher powered laser systems planned for advanced interferometric gravitational wave detectors

  11. Laterally injected light-emitting diode and laser diode

    Science.gov (United States)

    Miller, Mary A.; Crawford, Mary H.; Allerman, Andrew A.

    2015-06-16

    A p-type superlattice is used to laterally inject holes into an III-nitride multiple quantum well active layer, enabling efficient light extraction from the active area. Laterally-injected light-emitting diodes and laser diodes can enable brighter, more efficient devices that impact a wide range of wavelengths and applications. For UV wavelengths, applications include fluorescence-based biological sensing, epoxy curing, and water purification. For visible devices, applications include solid state lighting and projection systems.

  12. InP Schotky junctions for zero bias detector diodes

    Czech Academy of Sciences Publication Activity Database

    Horvath, Zs. J.; Rakovics, V.; Szentpáli, B.; Püspöki, S.; Žďánský, Karel

    2003-01-01

    Roč. 71, 1/2 (2003), s. 113-116 ISSN 0042-207X. [Joint Vacuum Conference JVC /9./. Schloss Seggau, Leibnitz by Graz, 16.06.2002-20.06.2002] R&D Projects: GA AV ČR KSK1010104 Projekt 04/01:4044 Grant - others:OTKA(HU) T035272 Institutional research plan: CEZ:AV0Z2067918 Keywords : Schottky barriers * semiconductor technology Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 0.612, year: 2003

  13. Narrow optical linewidths and spin pumping on charge-tunable close-to-surface self-assembled quantum dots in an ultrathin diode

    Science.gov (United States)

    Löbl, Matthias C.; Söllner, Immo; Javadi, Alisa; Pregnolato, Tommaso; Schott, Rüdiger; Midolo, Leonardo; Kuhlmann, Andreas V.; Stobbe, Søren; Wieck, Andreas D.; Lodahl, Peter; Ludwig, Arne; Warburton, Richard J.

    2017-10-01

    We demonstrate full charge control, narrow optical linewidths, and optical spin pumping on single self-assembled InGaAs quantum dots embedded in a 162.5 -nm -thin diode structure. The quantum dots are just 88 nm from the top GaAs surface. We design and realize a p -i -n -i -n diode that allows single-electron charging of the quantum dots at close-to-zero applied bias. In operation, the current flow through the device is extremely small resulting in low noise. In resonance fluorescence, we measure optical linewidths below 2 μ eV , just a factor of 2 above the transform limit. Clear optical spin pumping is observed in a magnetic field of 0.5 T in the Faraday geometry. We present this design as ideal for securing the advantages of self-assembled quantum dots—highly coherent single-photon generation, ultrafast optical spin manipulation—in the thin diodes required in quantum nanophotonics and nanophononics applications.

  14. Shaped detector

    International Nuclear Information System (INIS)

    Carlson, R.W.

    1981-01-01

    A radiation detector or detector array which has a non-constant spatial response, is disclosed individually and in combination with a tomographic scanner. The detector has a first dimension which is oriented parallel to the plane of the scan circle in the scanner. Along the first dimension, the detector is most responsive to radiation received along a centered segment of the dimension and less responsive to radiation received along edge segments. This non-constant spatial response can be achieved in a detector comprised of a scintillation crystal and a photoelectric transducer. The scintillation crystal in one embodiment is composed of three crystals arranged in layers, with the center crystal having the greatest light conversion efficiency. In another embodiment, the crystal is covered with a reflective substance around the center segment and a less reflective substance around the remainder. In another embodiment, an optical coupling which transmits light from adjacent the center segment with the greatest intensity couples the scintillation crystal and the photoelectric transducer. In yet another embodiment, the photoelectric transducer comprises three photodiodes, one receiving light produced adjacent the central segment and the other two receiving light produced adjacent the edge segments. The outputs of the three photodiodes are combined with a differential amplifier

  15. Thermometric Property of a Diode.

    Science.gov (United States)

    Inman, Fred W.; Woodruff, Dan

    1995-01-01

    Presents a simple way to implement the thermometric property of a semiconductor diode to produce a thermometer with a nearly linear dependence upon temperature over a wide range of temperatures. (JRH)

  16. Enhanced vbasis laser diode package

    Science.gov (United States)

    Deri, Robert J.; Chen, Diana; Bayramian, Andy; Freitas, Barry; Kotovsky, Jack

    2014-08-19

    A substrate having an upper surface and a lower surface is provided. The substrate includes a plurality of v-grooves formed in the upper surface. Each v-groove includes a first side and a second side perpendicular to the first side. A laser diode bar assembly is disposed within each of the v-grooves and attached to the first side. The laser diode bar assembly includes a first adhesion layer disposed on the first side of the v-groove, a metal plate attached to the first adhesion layer, a second adhesion layer disposed over the metal plate, and a laser diode bar attached to the second adhesion layer. The laser diode bar has a coefficient of thermal expansion (CTE) substantially similar to that of the metal plate.

  17. Monte Carlo modelling of Schottky diode for rectenna simulation

    Science.gov (United States)

    Bernuchon, E.; Aniel, F.; Zerounian, N.; Grimault-Jacquin, A. S.

    2017-09-01

    Before designing a detector circuit, the electrical parameters extraction of the Schottky diode is a critical step. This article is based on a Monte-Carlo (MC) solver of the Boltzmann Transport Equation (BTE) including different transport mechanisms at the metal-semiconductor contact such as image force effect or tunneling. The weight of tunneling and thermionic current is quantified according to different degrees of tunneling modelling. The I-V characteristic highlights the dependence of the ideality factor and the current saturation with bias. Harmonic Balance (HB) simulation on a rectifier circuit within Advanced Design System (ADS) software shows that considering non-linear ideality factor and saturation current for the electrical model of the Schottky diode does not seem essential. Indeed, bias independent values extracted in forward regime on I-V curve are sufficient. However, the non-linear series resistance extracted from a small signal analysis (SSA) strongly influences the conversion efficiency at low input powers.

  18. Radiation detectors of PIN type for X-rays

    International Nuclear Information System (INIS)

    Ramirez-Jimenez, F.J.

    2003-01-01

    In this laboratory session, tree experiments are proposed: the measurement of X-ray energy spectra from radioactive sources with a high resolution cooled Si-Li detector, with a room temperature PIN diode and the measurement of the response of a PIN diode to the intensity of X-rays of radio-diagnostic units. The spectra obtained with the Si-Li detector help to understand the energy distribution of X-rays and are used as a reference to compare the results obtained with the PIN diode. Measurements in medical X-ray machines are proposed. Low cost, simple electronic instruments and systems are used as tools to make measurements in X-ray units used in radio-diagnostic

  19. BES detector

    International Nuclear Information System (INIS)

    Bai, J.Z.; Bian, Q.; Chen, G.M.; Chen, L.J.; Chen, S.N.; Chen, Y.Q.; Chen, Z.Q.; Chi, Y.K.; Cui, H.C.; Cui, X.Z.; Deng, S.S.; Deng, Y.W.; Ding, H.L.; Dong, B.Z.; Dong, X.S.; Du, X.; Du, Z.Z.; Feng, C.; Feng, Z.; Fu, Z.S.; Gao, C.S.; Gao, M.L.; Gao, S.Q.; Gao, W.X.; Gao, Y.N.; Gu, S.D.; Gu, W.X.; Guan, Y.Z.; Guo, H.F.; Guo, Y.N.; Guo, Y.Y.; Han, S.W.; Han, Y.; Hao, W.; He, J.; He, K.R.; He, M.J.; Hou, X.J.; Hu, G.Y.; Hu, J.S.; Hu, J.W.; Huang, D.Q.; Huang, Y.Z.; Jia, Q.P.; Jiang, C.H.; Ju, Q.; Lai, Y.F.; Lang, P.F.; Li, D.S.; Li, F.; Li, H.; Li Jia; Li, J.T.; Li Jin; Li, L.L.; Li, P.Q.; Li, Q.M.; Li, R.B.; Li, S.Q.; Li, W.; Li, W.G.; Li, Z.X.; Liang, G.N.; Lin, F.C.; Lin, S.Z.; Lin, W.; Liu, Q.; Liu, R.G.; Liu, W.; Liu, X.; Liu, Z.A.; Liu, Z.Y.; Lu, C.G.; Lu, W.D.; Lu, Z.Y.; Lu, J.G.; Ma, D.H.; Ma, E.C.; Ma, J.M.; Mao, H.S.; Mao, Z.P.; Meng, X.C.; Ni, H.L.; Nie, J.; Nie, Z.D.; Niu, W.P.; Pan, L.J.; Qi, N.D.; Qian, J.J.; Qu, Y.H.; Que, Y.K.; Rong, G.; Ruan, T.Z.; Shao, Y.Y.; Shen, B.W.; Shen, D.L.; Shen, J.; Sheng, H.Y.; Sheng, J.P.; Shi, H.Z.; Song, X.F.; Sun, H.S.; Tang, F.K.; Tang, S.Q.; Tian, W.H.; Wang, F.; Wang, G.Y.; Wang, J.G.; Wang, J.Y.; Wang, L.S.; Wang, L.Z.; Wang, M.; Wang, P.; Wang, P.L.; Wang, S.M.; Wang, S.Q.; Wang, T.J.; Wang, X.W.; Wang, Y.Y.; Wang, Z.H.; Wang, Z.J.; Wei, C.L.; Wei, Z.Z.; Wu, J.W.; Wu, S.H.; Wu, S.Q.; Wu, W.M.; Wu, X.D.; Wu, Z.D.; Xi, D.M.; Xia, X.M.; Xiao, J.; Xie, P.P.; Xie, X.X.; Xu, J.G.; Xu, R.S.; Xu, Z.Q.; Xuan, B.C.; Xue, S.T.; Yan, J.; Yan, S.P.; Yan, W.G.; Yang, C.Z.; Yang, C.M.; Yang, C.Y.; Yang, X.F.; Yang, X.R.; Ye, M.H.; Yu, C.H.; Yu, C.S.; Yu, Z.Q.; Zhang, B.Y.; Zhang, C.D.; Zhang, C.C.; Zhang, C.Y.; Zhang, D.H.; Zhang, G.; Zhang, H.Y.; Zhang, H.L.; Zhang, J.W.; Zhang, L.S.; Zhang, S.Q.; Zhang, Y.P.; Zhang, Y.; Zhang, Y.M.; Zhao, D.X.; Zhao, J.W.; Zhao, M.; Zhao, P.D.; Zhao, P.P.; Zhao, W.R.; Zhao, Z.G.; Zhao, Z.Q.; Zheng, J.P.; Zheng, L.S.; Zheng, M.; Zheng, W.S.; Zheng, Z.P.; Zhong, G.P.; Zhou, G.P.; Zhou, H.S.; Zhou, J.; Zhou Li; Zhou Lin; Zhou, M.; Zhou, Y.S.; Zhou, Y.H.; Zhu, G.S.; Zhu, Q.M.; Zhu, S.G.; Zhu, Y.C.; Zhu, Y.S.; Zhuang, B.A.

    1994-01-01

    The Beijing Spectrometer (BES) is a general purpose solenoidal detector at the Beijing Electron Positron Collider (BEPC). It is designed to study exclusive final states in e + e - annihilations at the center of mass energy from 3.0 to 5.6 GeV. This requires large solid angle coverage combined with good charged particle momentum resolution, good particle identification and high photon detection efficiency at low energies. In this paper we describe the construction and the performance of BES detector. (orig.)

  20. Solid State Neutron Detector - A Review of Status

    International Nuclear Information System (INIS)

    Mukhopadhyay, Sanjoy

    2010-01-01

    The PowerPoint presentation was organized into the following areas: Driving forces behind research in semiconductor neutron devices; The (sup 3)He shortage crisis; Alternative detectors for neutron; Semiconductor diodes coated with boron; Perforated semiconductors for neutron detection; and, Three dimensional pillar and trench structured semiconductors.

  1. Method applied for the HPGe detector characterization

    International Nuclear Information System (INIS)

    Guillot, Nicolas; Monestier, Mathieu; Saurel, Nicolas

    2013-06-01

    Gamma ray spectrometry is a passive non destructive assay most commonly used to identify and quantify the radionuclides present in the complex huge objects such as nuclear waste packages. The treatment of spectra from the measurement of nuclear waste is performed in two steps: the first step is to extract the raw data from the spectra (energies and net photoelectric absorption peaks areas) and the second step is to determine the detection efficiency of the measured scene. The establishment by numerical modeling of the detection efficiency of the measured scene requires numerical modeling of both the measuring device (in this case a hyper pure germanium detector HPGe) and numerical modeling of the measured object. Numerical detector modeling is also called diode characterization, and has a spatial response equivalent to these of the real HPGe detector. This characterization is essential for the quantification of complex and non reproducible huge objects for which the detection efficiency can not be determined empirically. The Nuclear Measurement and Valuation Laboratory (LMNE) at the Atomic Energy Commission Valduc (CEA Valduc) has developed a new methodology for characterizing the HPGe detector. It has been tested experimentally with a real diode present in the laboratory (P-type planar detector). The characterization obtained with this methodology is similar to these of a real HPGe detector with an uncertainty approaching 5 percents. It is valid for a distance ranging from 10 cm to 150 cm, an angle ranging from 0 to 90 degrees and energy range from 53 keV to 1112 keV. The energy range is obtained with a source of Barium-133 and a source of Europium-152. The continuity of the detection efficiency curve is checked between the two sources with an uncertainty less than 2 percents. In addition, this methodology can be extrapolated to any type of detector crystal geometry (planar). (authors)

  2. The FPGA Pixel Array Detector

    International Nuclear Information System (INIS)

    Hromalik, Marianne S.; Green, Katherine S.; Philipp, Hugh T.; Tate, Mark W.; Gruner, Sol M.

    2013-01-01

    A proposed design for a reconfigurable x-ray Pixel Array Detector (PAD) is described. It operates by integrating a high-end commercial field programmable gate array (FPGA) into a 3-layer device along with a high-resistivity diode detection layer and a custom, application-specific integrated circuit (ASIC) layer. The ASIC layer contains an energy-discriminating photon-counting front end with photon hits streamed directly to the FPGA via a massively parallel, high-speed data connection. FPGA resources can be allocated to perform user defined tasks on the pixel data streams, including the implementation of a direct time autocorrelation function (ACF) with time resolution down to 100 ns. Using the FPGA at the front end to calculate the ACF reduces the required data transfer rate by several orders of magnitude when compared to a fast framing detector. The FPGA-ASIC high-speed interface, as well as the in-FPGA implementation of a real-time ACF for x-ray photon correlation spectroscopy experiments has been designed and simulated. A 16×16 pixel prototype of the ASIC has been fabricated and is being tested. -- Highlights: ► We describe the novelty and need for the FPGA Pixel Array Detector. ► We describe the specifications and design of the Diode, ASIC and FPGA layers. ► We highlight the Autocorrelation Function (ACF) for speckle as an example application. ► Simulated FPGA output calculates the ACF for different input bitstreams to 100 ns. ► Reduced data transfer rate by 640× and sped up real-time ACF by 100× other methods.

  3. Filtered x-ray diode diagnostics fielded on the Z-accelerator for source power measurements

    International Nuclear Information System (INIS)

    Chandler, G.A.; Deeney, C.; Cuneo, M.

    1998-01-01

    Filtered x-ray diode, (XRD), detectors are used as primary radiation flux diagnostics on Sandia's Z-accelerator, which generates nominally a 200 TW, 2 MJ, x-ray pulse. Given such flux levels and XRD sensitivities the detectors are being fielded 23 meters from the source. The standard diagnostic setup and sensitivities are discussed. Vitreous carbon photocathodes are being used to reduce the effect of hydrocarbon contamination present in the Z-machine vacuum system. Nevertheless pre- and post-calibration data taken indicate spectrally dependent changes in the sensitivity of these detectors by up to factors up to 2 or 3

  4. Smoke detectors

    International Nuclear Information System (INIS)

    Macdonald, E.

    1976-01-01

    A smoke detector is described consisting of a ventilated ionisation chamber having a number of electrodes and containing a radioactive source in the form of a foil supported on the surface of the electrodes. This electrode consists of a plastic material treated with graphite to render it electrically conductive. (U.K.)

  5. Semiconductor Detectors

    International Nuclear Information System (INIS)

    Cortina, E.

    2007-01-01

    Particle detectors based on semiconductor materials are among the few devices used for particle detection that are available to the public at large. In fact we are surrounded by them in our daily lives: they are used in photoelectric cells for opening doors, in digital photographic and video camera, and in bar code readers at supermarket cash registers. (Author)

  6. Capillary detectors

    International Nuclear Information System (INIS)

    Konijn, J.; Winter, K.; Vilain, P.; Wilquet, G.; Fabre, J.P.; Kozarenko, E.; Kreslo, I.; Goldberg, J.; Hoepfner, K.; Bay, A.; Currat, C.; Koppenburg, P.; Frekers, D.; Wolff, T.; Buontempo, S.; Ereditato, A.; Frenkel, A.; Liberti, B.; Martellotti, G.; Penso, G.; Ekimov, A.; Golovkin, S.; Govorun, V.; Medvedkov, A.; Vasil'chenko, V.

    1998-01-01

    The option for a microvertex detector using glass capillary arrays filled with liquid scintillator is presented. The status of capillary layers development and possible read-out techniques for high rate environment are reported. (Copyright (c) 1998 Elsevier Science B.V., Amsterdam. All rights reserved.)

  7. A filter technique for optimising the photon energy response of a silicon pin diode dosemeter

    International Nuclear Information System (INIS)

    Olsher, R.H.; Eisen, Y.

    1996-01-01

    Unless they are energy compensated, silicon PIN diodes used in electronic pocket dosemeters, have significant over-response below 200 keV. Siemens is using three diodes in parallel with individual filters to produce excellent energy and angular response. An algorithm based on the photon spectrum of a single diode could be used to flatten the energy response. The commercial practice is to use a single diode with a simple filter to flatten the energy response, despite the mediocre low energy photon. The filter technique with an opening has been used for energy compensating GM detectors and proportional counters and a new variation of it has been investigated which compensates the energy response of a silicon PIN diode and maintains an extended low energy response. It uses a composite filter of two or more materials with several openings whose individual area is in the range of 15% to 25% of the diode's active area. One opening is centred over the diode's active area and others are located at the periphery of the active area to preserve a good polar response to ±45 o . Monte Carlo radiation transport methods were used to simulate the coupled electron-photon transport through a Hamamatsu S2506-01 diode and to determine the energy response of the diode for a variety of filters. In current mode, the resultant dosemeter energy response relative to air dose was within -15% and +30% for 0 o incidence over the energy range from 15 keV to 1 MeV. In pulse mode, the resultant dosemeter energy response was within -25% and +50% for 0 o incidence over the energy range from 30 keV to 10 MeV. For ±45 o incidence, the energy response was within -25% and +40% from 40 keV to 10 MeV. Theoretical viability of the filter technique has been shown in this work (Author)

  8. Study of polarization phenomena in Schottky CdTe diodes using infrared light illumination

    Energy Technology Data Exchange (ETDEWEB)

    Sato, Goro, E-mail: gsato@astro.isas.jaxa.jp [Institute of Space and Astronautical Science, Japan Aerospace Exploration Agency, 3-1-1 Yoshinodai, Chuo-ku, Sagamihara, Kanagawa 252-5210 (Japan); Fukuyama, Taro [Institute of Space and Astronautical Science, Japan Aerospace Exploration Agency, 3-1-1 Yoshinodai, Chuo-ku, Sagamihara, Kanagawa 252-5210 (Japan); University of Tokyo, 7-3-1, Hongo, Bunkyo, Tokyo 113-0033 (Japan); Watanabe, Shin; Ikeda, Hirokazu; Ohta, Masayuki; Ishikawa, Shin' nosuke [Institute of Space and Astronautical Science, Japan Aerospace Exploration Agency, 3-1-1 Yoshinodai, Chuo-ku, Sagamihara, Kanagawa 252-5210 (Japan); Takahashi, Tadayuki [Institute of Space and Astronautical Science, Japan Aerospace Exploration Agency, 3-1-1 Yoshinodai, Chuo-ku, Sagamihara, Kanagawa 252-5210 (Japan); University of Tokyo, 7-3-1, Hongo, Bunkyo, Tokyo 113-0033 (Japan); Shiraki, Hiroyuki; Ohno, Ryoichi [ACRORAD Co., Ltd., 13-23 Suzaki, Uruma, Okinawa 904-2234 (Japan)

    2011-10-01

    Schottky CdTe diode detectors suffer from a polarization phenomenon, which is characterized by degradation of the spectral properties over time following exposure to high bias voltage. This is considered attributable to charge accumulation at deep acceptor levels. A Schottky CdTe diode was illuminated with an infrared light for a certain period during a bias operation, and two opposite behaviors emerged. The detector showed a recovery when illuminated after the bias-induced polarization had completely progressed. Conversely, when the detector was illuminated before the emergence of bias-induced polarization, the degradation of the spectral properties was accelerated. Interpretation of these effects and discussion on the energy level of deep acceptors are presented.

  9. p-i-n Homojunction in Organic Light-Emitting Transistors

    NARCIS (Netherlands)

    Bisri, Satria Zulkarnaen; Takenobu, Taishi; Sawabe, Kosuke; Tsuda, Satoshi; Yomogidao, Yohei; Yamao, Takeshi; Hotta, Shu; Adachi, Chihaya; Iwasa, Yoshihiro

    2011-01-01

    A new method for investigating light-emitting property in organic devices is demonstrated. We apply the ambipolar light-emitting transistors (LETS) to directly observe the recombination zone, and find a strong link between the transistor performance and the zone size. This finding unambiguously

  10. Open circuit voltage-decay behavior in amorphous p-i-n solar due to injection

    Science.gov (United States)

    Smrity, Manu; Dhariwal, S. R.

    2018-05-01

    The paper deals with the basic recombination processes at the dangling bond and the band tail states at various levels of injection, expressed in terms of short-circuit current density and their role in the behavior of amorphous solar cells. As the level of injection increases the fill factor decreases whereas the open circuit voltage increases very slowly, showing a saturation tendency. Calculations have been done for two values of tail state densities and shows that with an increase in tail state densities both, the fill factor and open circuit voltage decreases, results an overall degradation of the solar cell.

  11. Modeling of carrier transport in multi-quantum-well p-i-n modulators

    DEFF Research Database (Denmark)

    Højfeldt, Sune; Mørk, Jesper

    2002-01-01

    The dynamical properties of InGaAsP multi-quantum-well electroabsorption modulators are investigated using a comprehensive numerical device model. We calculate the time-dependent sweep-out of photo-generated carriers and the corresponding time-dependent absorption change. The sweep-out is influen......The dynamical properties of InGaAsP multi-quantum-well electroabsorption modulators are investigated using a comprehensive numerical device model. We calculate the time-dependent sweep-out of photo-generated carriers and the corresponding time-dependent absorption change. The sweep......-out is influenced by carriers being recaptured into subsequent wells as they move towards the contacts. This process drastically increases the sweep-out time in our ten-well structure (similar to25 ps) compared to the pure drift-time (similar to1 ps). We also compare the saturation properties of two components...

  12. Performances of epitaxial GaAs p/i/n structures for X-ray imaging

    CERN Document Server

    Sun, G C; Haguet, V; Pesant, J C; Montagne, J P; Lenoir, M; Bourgoin, J C

    2002-01-01

    We have realized 150 mu mx150 mu m pixels using ion implantation followed by photolithography, metallic contact evaporation and chemical etching on about 200 mu m thick GaAs epitaxial layers. These layers were grown on n sup + and p sup + substrates by an already described Chemical Reaction technique, which is economical, non-polluting and can attain growth rates of several microns per minute. The mesa p sup + /i/n sup + pixel were characterized using current-voltage and capacitance-voltage measurements. The charge collection efficiency was evaluated by photoconductivity measurements under typical conditions of standard radiological examinations.

  13. Peak reading detector circuit

    International Nuclear Information System (INIS)

    Courtin, E.; Grund, K.; Traub, S.; Zeeb, H.

    1975-01-01

    The peak reading detector circuit serves for picking up the instants during which peaks of a given polarity occur in sequences of signals in which the extreme values, their time intervals, and the curve shape of the signals vary. The signal sequences appear in measuring the foetal heart beat frequence from amplitude-modulated ultrasonic, electrocardiagram, and blood pressure signals. In order to prevent undesired emission of output signals from, e. g., disturbing intermediate extreme values, the circuit consists of the series connections of a circuit to simulate an ideal diode, a strong unit, a discriminator for the direction of charging current, a time-delay circuit, and an electronic switch lying in the decharging circuit of the storage unit. The time-delay circuit thereby causes storing of a preliminary maximum value being used only after a certain time delay for the emission of the output signal. If a larger extreme value occurs during the delay time the preliminary maximum value is cleared and the delay time starts running anew. (DG/PB) [de

  14. Silicon Based Mid Infrared SiGeSn Heterostructure Emitters and Detectors

    Science.gov (United States)

    2016-05-16

    AFRL-AFOSR-JP-TR-2016-0054 Silicon based mid infrared SiGeSn heterostrcture emitters and detectors Greg Sun UNIVERSITY OF MASSACHUSETTS Final Report... Silicon Based Mid Infrared SiGeSn Heterostructure Emitters and Detectors ” February 10, 2016 Principal Investigator: Greg Sun Engineering...diodes are incompatible with the CMOS process and therefore cannot be easily integrated with Si electronics . The GeSn mid IR detectors developed in

  15. Electron dosimetry in irradiation processing with rad-hard diodes

    International Nuclear Information System (INIS)

    Santos, Thais Cavalheri dos

    2012-01-01

    This work had the aim of the development of dosimetric systems based on Si special diodes, resistant to radiation damage to online monitoring of irradiation processing using 1.5 MeV electrons energy and for relative dosimetry and clinical electron beam scanning within an energy range of 6 MeV up to 21 MeV. The diodes used were produced by Float Zone standard (FZ), Magnetic Czochralski (MCz) and epitaxy growth (EPI) methods. In order to use the diodes as detectors, they were fixed on alumina base to allow the connection of the polarization electrodes and the signals extraction. After the diode assembly on the base, each one was housed in a black acrylic probe with aluminized Mylar® window and LEMO® connector. With the devices operating in photovoltaic mode, the integration of the current signals as a function of irradiation time allowed obtain the charge produced in the sensitive volume of each diode irradiated. The electron accelerator used for high doses irradiation was the DC 1500/25/4 JOB 188 of the 1.5 MeV installed at the Radiation Technology Center of the IPEN/CNEN-SP. The current profile as function of exposure time, the response repeatability, the sensitivity as function of absorbed dose and the dose response curve were studied for each device. In comparison to FZ diode, we observed a greater decrease in the sensitivity for MCz diode, and good repeatability in both cases. Also, the increasing of the charge with the absorbed dose was well fitted by a second order polynomial function. In the EPI diode characterization, this one exhibited repeatability better than CTA dosimeters applied routinely in radiation processing. The above results indicate the potential use of these radiation hardness Si diodes in online dosimetry to high doses applications. For low doses irradiation were used the linear accelerators KD2 and Primus, both manufactured by Siemens and located at Sirio-Libanes Hospital. The diodes responses were evaluated for electron beams within the

  16. Assessment of new small-field detectors against standard-field detectors for practical stereotactic beam data acquisition

    International Nuclear Information System (INIS)

    McKerracher, C.; Thwaites, D.I.

    1999-01-01

    Two new detectors (0.015 cm 3 ion chamber from PTW, 0.6 mm diameter diode from Scanditronix AB) designed specifically for use in small stereotactic fields were compared against similar, more routine, detectors (0.125 cm 3 ion chamber, parallel plate chamber, shielded and unshielded diodes and film). Percentage depth doses, tissue maximum ratios, off-axis ratios and relative output factors were compared for circular fields in the 40-12.5 mm diameter range, with a view to identifying the optimum detector for stereotactic beam data acquisition. Practical suggestions for beam data collection and analysis are made, with an emphasis on what is achievable practically in radiotherapy departments where the primary demand is to provide a routine service. No single detector was found to be ideal, and neither of the two new measurement devices had any significant advantages over more routine devices, in the situations measured. Although the new 0.015 cm 3 ion chamber was an improvement on a 0.125 cm 3 ion chamber in the measurement of profiles, it was still too large when compared with a diode. The new small diode had a low signal to noise ratio which made reliable data difficult to extract and its only advantage is possibly improved resolution in fields smaller than the range tested. The use of a larger unshielded diode is recommended for all measurements, with the additional cross-checking of data against at least one small ion chamber and film. A simple method of obtaining reliable output data from the detectors used is explained. (author)

  17. Characterisation of Silicon Timing Detectors for the RD50 Collaboration

    CERN Document Server

    Immig, David Maximilian

    2017-01-01

    Increasing pile-up and irradiation following with the high luminosity upgrade of the LHC, demands the development of improved semiconductor detectors. The former problem can be reduced by more precise time information, which can be obtained using a future detector based on the low gain avalanche diode (LGAD). LGADs are studied by the RD50-Collaboration, which studies the characteristics of semiconductor devices to improve these for future requirements of high energy physics. This reports is engaged with the process to characterise semiconductor detectors, specially LGADs, with capacitance-voltage and current-voltage measurements as well as transient current techniques of un- and irradiated semiconductor devices.

  18. Tracking with heavily irradiated silicon detectors operated at cryogenic temperatures

    International Nuclear Information System (INIS)

    Casagrande, L.; Barnett, B.M.; Bartalina, P.

    1999-01-01

    In this work, the authors show that a heavily irradiated double-sided silicon microstrip detector recovers its performance when operated at cryogenic temperatures. A DELPHI microstrip detector, irradiated to a fluence of ∼4 x 10 14 p/cm 2 , no longer operational at room temperature, cannot be distinguished from a non-irradiated one when operated at T < 120 K. Besides confirming the previously observed Lazarus effect in single diodes, these results establish, for the first time, the possibility of using standard silicon detectors for tracking applications in extremely demanding radiation environments

  19. Pre-clinical evaluation of a diode-based In vivo dosimetry system

    International Nuclear Information System (INIS)

    Trujillo, G.

    1998-01-01

    Diode detector systems are routinely used in a number of departments for the quality assurance of the delivered dose in radiation oncology (1,2,3,4,5). The main advantage of diode detectors for in vivo dosimetry (over TLDs, film dosimetry, ionization chambers) is that results are immediately available in real time, do not need external bias voltage and are more sensitive for the same detection volume than ionization chambers thereby allowing a direct and immediate check of the treatment accuracy. Also, is important to mention that is possible to obtain different accuracy levels. For example, in the case of the measurements designed for evaluating the dosimetric accuracy of a new treatment technique for dose escalation studies the action level should be tighter (the order of 2 % to 4 %, 2 standard deviations) than for routine measurements aiming to discover and correct for errors in the treatment of individual patients (± 5 % - 10 % or to avoid mis administrations (10 % - 15 %). This work describes the calibration method adopted and the evaluation of the accuracy and precision of in vivo dosimetry at Co 60 and 23 MV photon energies. Extensive phantoms measurements were made to determine the influence of physical conditions on the diode response. Parameters investigated included diode linearity, leakage, and measurement reproducibility, as well as the field size, SSD, and angular dependence. the practical consequences of these measurements are reported. There is still some controversy as to whether in vivo (diode) dosemeters are required for routine quality assurance purposes. Our work has shown that while care must be taken in choosing and handling diode detector systems they are able to provide an efficient and effective method of ensuring the dose delivered to the patient during treatment is within acceptable limits. (Author)

  20. Experimental comparison of profiles of acquired small fields with ionization chambers, diodes, radiochromic s and TLD films

    International Nuclear Information System (INIS)

    Venencia, D.; Garrigo, E.; Filipuzzi, M.; Germanier, A.

    2014-08-01

    The use of radiation small fields, introduced by new techniques, can bring a considerable uncertainty in the precision of the acquired profiles, due to the conditions of lateral electronic non-equilibrium and the perturbations introduced by the detectors (volume effect and alteration of the charged particles flowing) [Das et al., 2007]. The development of new miniature detectors looks to diminish the uncertainty created by the material and the size of the sensitive volume of the dosimeter. For this reason, comparative measurements for three sizes of square field were carried out (20 mm, 10 mm and 5 mm, of side) using a detectors series: 3 ionization chambers (PTW-31003, IBA-CC04, PTW-31016), 2 diodes (PTW-60012, IBA-Sfd), thermoluminescent detectors micro-cubes of 1 mm of edge (TLD-700) and radiochromic s films EBT-3. These last two were used as reference detectors, due to their spatial high resolution and similar performance with Monte Carlo simulations [Francescon et al., 1998]. So much the thermoluminescent detectors as the radiochromic films resolved the profiles in a similar way. Both diodes responded correctly, but the rest of the detectors overestimated the gloom of the fields, which allows conclude that the used TLD (and both diodes) can resolve field sizes correctly, usually utilized in radio-surgery, without producing significant alterations in the acquired data. (author)

  1. Neutron detector

    Science.gov (United States)

    Stephan, Andrew C [Knoxville, TN; Jardret,; Vincent, D [Powell, TN

    2011-04-05

    A neutron detector has a volume of neutron moderating material and a plurality of individual neutron sensing elements dispersed at selected locations throughout the moderator, and particularly arranged so that some of the detecting elements are closer to the surface of the moderator assembly and others are more deeply embedded. The arrangement captures some thermalized neutrons that might otherwise be scattered away from a single, centrally located detector element. Different geometrical arrangements may be used while preserving its fundamental characteristics. Different types of neutron sensing elements may be used, which may operate on any of a number of physical principles to perform the function of sensing a neutron, either by a capture or a scattering reaction, and converting that reaction to a detectable signal. High detection efficiency, an ability to acquire spectral information, and directional sensitivity may be obtained.

  2. Studies of cold protection diodes

    International Nuclear Information System (INIS)

    Carcagno, R.; Zeigler, J.

    1990-01-01

    The feasibility of a passive quench protection system for the Superconducting Supercollider (SSC) main ring magnets depends on the radiation resistance and reliability of the diodes used as current bypass elements. These diodes would be located inside the magnet cryostat, subjecting them to liquid helium temperature and a relatively high radiation flux. Experimental and theoretical efforts have identified a commercially available diode which appears to be capable of surviving the cryogenic temperature and radiation environment of the accelerator. High current IV measurements indicate that the usable lifetime of this diode, based on an estimate of the peak junction temperature during a quench pulse, is an order of magnitude greater then than the expected lifetime of the SSC itself. However, an unexpected relationship was discovered between the diode turn-on voltage at 5 K and the most recent reverse voltage or temperature excursion. This turn-on voltage as a function of radiation exposure appears to be erratic and indicates a need for further investigation. 14 refs., 8 figs., 2 tabs

  3. Studies of cold protection diodes

    International Nuclear Information System (INIS)

    Carcagno, R.; Zeigler, J.

    1990-03-01

    The feasibility of a passive quench protection system for the Superconducting Supercollider (SSC) main ring magnets depends on the radiation resistance and reliability of the diodes used as current bypass elements. These diodes would be located inside the magnet cryostat, subjecting them to liquid helium temperature and a relatively high radiation flux. Experimental and theoretical efforts have identified a commercially available diode which appears to be capable of surviving the cryogenic temperature and radiation environment of the accelerator. High current 4 measurements indicate that the usable lifetime of this diode, based on an estimate of the peak junction temperature during a quench pulse, is an order of magnitude greater then than the expected lifetime of the SSC itself. However, an unexpected relationship was discovered between the diode turn-on voltage at 5 K and the most recent reverse voltage or temperature excursion. This turn-on voltage as a function of radiation exposure appears to be erratic and indicates a need for further investigation. 11 refs., 8 figs., 2 tabs

  4. MUST detector

    International Nuclear Information System (INIS)

    Blumenfeld, Y.; Auger, F.; Sauvestre, J.E.

    1999-01-01

    The IPN-Orsay, in collaboration with the SPhN-Saclay and the DPTA Bruyeres, has built an array of 8 telescopes based on Si-strip technology for the study of direct reactions induced by radioactive beams. The detectors are described, along with the compact high density VXI electronics and the stand-alone data acquisition system developed in the laboratory. One telescope was tested using an 40 Ar beam and the measured performances are discussed. (authors)

  5. Radiation detector

    Energy Technology Data Exchange (ETDEWEB)

    Ohata, Shuichi; Takeuchi, Yoji

    1968-10-30

    Herein disclosed is an ionization chamber the airtightness of which can be readily tested. The ionization chamber is characterized in that a small amount of helium gas is filled in the chamber in combination with other ionization gases such as argon gas, xenon gas and the like. Helium leakage from the chamber is measured by a known helium gas sensor in a vacuum vessel. Hence the long term drift of the radiation detector sensitivity may be determined.

  6. A variable temperature cryostat that produces in situ clean-up germanium detector surfaces

    International Nuclear Information System (INIS)

    Pehl, R.H.; Madden, N.W.; Malone, D.F.; Cork, C.P.; Landis, D.A.; Xing, J.S.; Friesel, D.L.

    1988-11-01

    Variable temperature cryostats that can maintain germanium detectors at temperatures from 82 K to about 400 K while the thermal shield surrounding the detectors remains much colder when the detectors are warmed have been developed. Cryostats such as these offer the possibility of cryopumping material from the surface of detectors to the colder thermal shield. The diode characteristics of several detectors have shown very significant improvement following thermal cycles up to about 150 K in these cryostats. Important applications for cryostats having this attribute are many. 4 figs

  7. Performance of hybrid photon detector prototypes with encapsulated silicon pixel detector and readout for the RICH counters of LHCb

    International Nuclear Information System (INIS)

    Campbell, M.; George, K.A.; Girone, M.; Gys, T.; Jolly, S.; Piedigrossi, D.; Riedler, P.; Rozema, P.; Snoeys, W.; Wyllie, K.

    2003-01-01

    These proceedings report on the performance of the latest prototype pixel hybrid photon detector in preparation for the LHCb Ring Imaging Cherenkov detectors. The prototype encapsulates a silicon pixel detector bump-bonded to a binary read-out chip with short (25 ns) peaking time and low ( - ) detection threshold. A brief description of the prototype is given, followed by the preliminary results of the characterisation of the prototype behaviour when tested using a low intensity pulsed light emitting diode. The results obtained are in good agreement with those obtained using previous prototypes. The proceedings conclude with a summary of the current status and future plans

  8. Laser Diode Beam Basics, Manipulations and Characterizations

    CERN Document Server

    Sun, Haiyin

    2012-01-01

    Many optical design technical books are available for many years which mainly deal with image optics design based on geometric optics and using sequential raytracing technique. Some books slightly touched laser beam manipulation optics design. On the other hand many books on laser diodes have been published that extensively deal with laser diode physics with little touching on laser diode beam manipulations and characterizations. There are some internet resources dealing with laser diode beams. However, these internet resources have not covered enough materials with enough details on laser diode beam manipulations and characterizations. A technical book concentrated on laser diode beam manipulations and characterizations can fit in to the open and provide useful information to laser diode users. Laser Diode Beam Basics, Manipulations and  Characterizations is concentrated on the very practical side of the subject, it only discusses the basic physics and mathematics that are necessary for the readers in order...

  9. Few-photon optical diode

    OpenAIRE

    Roy, Dibyendu

    2010-01-01

    We propose a novel scheme of realizing an optical diode at the few-photon level. The system consists of a one-dimensional waveguide coupled asymmetrically to a two-level system. The two or multi-photon transport in this system is strongly correlated. We derive exactly the single and two-photon current and show that the two-photon current is asymmetric for the asymmetric coupling. Thus the system serves as an optical diode which allows transmission of photons in one direction much more efficie...

  10. Wideband 4-diode sampling circuit

    Science.gov (United States)

    Wojtulewicz, Andrzej; Radtke, Maciej

    2016-09-01

    The objective of this work was to develop a wide-band sampling circuit. The device should have the ability to collect samples of a very fast signal applied to its input, strengthen it and prepare for further processing. The study emphasizes the method of sampling pulse shaping. The use of ultrafast pulse generator allows sampling signals with a wide frequency spectrum, reaching several gigahertzes. The device uses a pulse transformer to prepare symmetrical pulses. Their final shape is formed with the help of the step recovery diode, two coplanar strips and Schottky diode. Made device can be used in the sampling oscilloscope, as well as other measurement system.

  11. Improved set of criticality accident detectors used in the intercomparison experiment in Valduc

    International Nuclear Information System (INIS)

    Jozefowicz, K.; Golnik, N.

    1996-01-01

    An improved set of critically accident detectors has been elaborated for the needs of the Inst. of Atomic Energy in Swierk. The sets, which consist of fission track detectors, wide-base silicon diodes and RPL glasses, were tested in the international intercomparison experiment in Valduc, France. Comparison of our results with the reference measurements showed a good agreement (within 25%) for both the neutron and gamma measurements. Additionally, the diode response to neutron kerma was investigated more extensively in the dose range between 2 and 10 Gy, where the dependence of the diode signal versus neutron kerma was not well known. A possibility of the multiple use of the diodes has been proved. (author)

  12. A new light emitting diode-light emitting diode portable carbon dioxide gas sensor based on an interchangeable membrane system for industrial applications.

    Science.gov (United States)

    de Vargas-Sansalvador, I M Pérez; Fay, C; Phelan, T; Fernández-Ramos, M D; Capitán-Vallvey, L F; Diamond, D; Benito-Lopez, F

    2011-08-12

    A new system for CO(2) measurement (0-100%) based on a paired emitter-detector diode arrangement as a colorimetric detection system is described. Two different configurations were tested: configuration 1 (an opposite side configuration) where a secondary inner-filter effect accounts for CO(2) sensitivity. This configuration involves the absorption of the phosphorescence emitted from a CO(2)-insensitive luminophore by an acid-base indicator and configuration 2 wherein the membrane containing the luminophore is removed, simplifying the sensing membrane that now only contains the acid-base indicator. In addition, two different instrumental configurations have been studied, using a paired emitter-detector diode system, consisting of two LEDs wherein one is used as the light source (emitter) and the other is used in reverse bias mode as the light detector. The first configuration uses a green LED as emitter and a red LED as detector, whereas in the second case two identical red LEDs are used as emitter and detector. The system was characterised in terms of sensitivity, dynamic response, reproducibility, stability and temperature influence. We found that configuration 2 presented a better CO(2) response in terms of sensitivity. Copyright © 2011 Elsevier B.V. All rights reserved.

  13. Smoke detectors

    International Nuclear Information System (INIS)

    Fung, C.K.

    1981-01-01

    This describes a smoke detector comprising a self-luminous light source and a photosensitive device which is so arranged that the light source is changed by the presence of smoke in a detecting region. A gaseous tritium light source is used. This consists of a borosilicate glass bulb with an internal phosphor coating, filled with tritium gas. The tritium emits low energy beta particles which cause the phosphor to glow. This is a reliable light source which needs no external power source. The photosensitive device may be a phototransistor and may drive a warning device through a directly coupled transistor amplifier. (U.K.)

  14. Photodiodes selection for the VIRGO detector, the first step

    International Nuclear Information System (INIS)

    Caron, B.; Dominjon, A.; Flaminio, R.; Hermel, R.; Lacotte, J.C.; Marion, F.; Massonet, L.; Morand, R.; Mours, B.

    1994-07-01

    In the framework of the Gravitational Waves detector VIRGO, the photodetector system is under construction. The diodes that will be used must satisfy at the same time quite unusual criteria, among them a good quantum efficiency at a wavelength of 1.06 μm and a good linearity at MHz frequencies for an incident light power of 100 mW. The test method and the first very promising results obtained towards these directions with commercially available diodes in InGaAs are presented. (author). 3 refs., 6 figs., 2 tabs

  15. Properties of CMOS devices and circuits fabricated on high-resistivity, detector-grade silicon

    International Nuclear Information System (INIS)

    Holland, S.

    1991-11-01

    A CMOS process that is compatible with silicon p-i-n radiation detectors has been developed and characterized. A total of twelve mask layers are used in the process. The NMOS device is formed in a retrograde well while the PMOS device is fabricated directly in the high-resistivity silicon. Isolation characteristics are similar to a standard foundary CMOS process. Circuit performance using 3 μm design rules has been evaluated. The measured propagation delay and power-delay product for a 51-stage ring oscillator was 1.5 ns and 43 fJ, respectively. Measurements on a simple cascode amplifier results in a gain-bandwidth product of 200 MHz at a bias current of 15 μA. The input-referred noise of the cascode amplifier is 20 nV/√Hz at 1 MHz

  16. New Type Far IR and THz Schottky Barrier Detectors for Scientific and Civil Application

    Directory of Open Access Journals (Sweden)

    V. G. Ivanov

    2011-01-01

    Full Text Available The results of an experimental investigation into a new type of VLWIR detector based on hot electron gas emission and architecture of the detector are presented and discussed. The detectors (further referred to as HEGED take advantage of the thermionic emission current change effect in a semiconductor diode with a Schottky barrier (SB as a result of the direct transfer of the absorbed radiation energy to the system of electronic gas in the quasimetallic layer of the barrier. The possibility of detecting radiation having the energy of quantums less than the height of the Schottky diode potential barrier and of obtaining a substantial improvement of a cutoff wavelength to VLWIR of the PtSi/Si detector has been demonstrated. The complementary contribution of two physical mechanisms of emanation detection—“quantum” and hot electrons gas emission—has allowed the creation of a superwideband IR detector using standard silicon technology.

  17. Laser diode technology and applications

    International Nuclear Information System (INIS)

    Figueroa, L.

    1989-01-01

    This book covers a wide range of semiconductor laser technology, from new laser structures and laser design to applications in communications, remote sensing, and optoelectronics. The authors report on new laser diode physics and applications and present a survey of the state of the art as well as progress in new developments

  18. Ultra-wideband balanced schottky envelope detector for data communication with high bitrate to carrier frequency ratio

    DEFF Research Database (Denmark)

    Granja, Angel Blanco; Cimoli, Bruno; Rodriguez, Sebastian

    2017-01-01

    This paper reports on an ultra-wideband (UWB) Schottky diode based balanced envelope detector for the L-, S-, C- and X- bands. The proposed circuit consists of a balun that splits the input signal into two 180° out of phase signals, a balanced detector, that demodulates the two signals, a low pass...

  19. Aggregation in organic light emitting diodes

    Science.gov (United States)

    Meyer, Abigail

    Organic light emitting diode (OLED) technology has great potential for becoming a solid state lighting source. However, there are inefficiencies in OLED devices that need to be understood. Since these inefficiencies occur on a nanometer scale there is a need for structural data on this length scale in three dimensions which has been unattainable until now. Local Electron Atom Probe (LEAP), a specific implementation of Atom Probe Tomography (APT), is used in this work to acquire morphology data in three dimensions on a nanometer scale with much better chemical resolution than is previously seen. Before analyzing LEAP data, simulations were used to investigate how detector efficiency, sample size and cluster size affect data analysis which is done using radial distribution functions (RDFs). Data is reconstructed using the LEAP software which provides mass and position data. Two samples were then analyzed, 3% DCM2 in C60 and 2% DCM2 in Alq3. Analysis of both samples indicated little to no clustering was present in this system.

  20. High power diode pumped solid state lasers

    International Nuclear Information System (INIS)

    Solarz, R.; Albrecht, G.; Beach, R.; Comaskey, B.

    1992-01-01

    Although operational for over twenty years, diode pumped solid state lasers have, for most of their existence, been limited to individual diodes pumping a tiny volume of active medium in an end pumped configuration. More recent years have witnessed the appearance of diode bars, packing around 100 diodes in a 1 cm bar which have enabled end and side pumped small solid state lasers at the few Watt level of output. This paper describes the subsequent development of how proper cooling and stacking of bars enables the fabrication of multi kill average power diode pump arrays with irradiances of 1 kw/cm peak and 250 W/cm 2 average pump power. Since typical conversion efficiencies from the diode light to the pumped laser output light are of order 30% or more, kW average power diode pumped solid state lasers now are possible

  1. Application of a-Si:H radiation detectors in medical imaging

    International Nuclear Information System (INIS)

    Lee, Hyoung-Koo.

    1995-06-01

    Monte Carlo simulations of a proposed a-Si:H-based current-integrating gamma camera were performed. The analysis showed that the intrinsic resolution of such a camera was 1 ∼ 2.5 mm, which is somewhat better than that of a conventional gamma camera, and that the greater blurring, due to the detection of scattered γ-rays, could be reduced considerably by image restoration techniques. This proposed gamma camera would be useful for imaging shallow organs such as the thyroid. Prototype charge-storage a-Si:H pixel detectors for such a camera were designed, constructed and tested. The detectors could store signal charge as long as 5 min at -26C. The thermal generation current in reverse biased a-Si:H p-i-n photodetectors was investigated, and the Poole-Frenkel effect was found to be the most significant source of the thermal generation current. Based on the Poole-Frenkel effect, voltage- and time-dependent thermal generation current was modeled. Using the model, the operating conditions of the proposed a-Si:H gamma camera, such as the operating temperature, the operating bias and the γ-scan period, could be predicted. The transient photoconductive gain mechanism in various a-Si:H devices was investigated for applications in digital radiography. Using the a-Si:H photoconductors in n-i-n configuration in pixel arrays, enhancement in signal collection (more than 200 times higher signal level) can be achieved in digital radiography, compared to the ordinary p-i-n type a-Si:H x-ray imaging arrays

  2. Fast random-number generation using a diode laser's frequency noise characteristic

    Science.gov (United States)

    Takamori, Hiroki; Doi, Kohei; Maehara, Shinya; Kawakami, Kohei; Sato, Takashi; Ohkawa, Masashi; Ohdaira, Yasuo

    2012-02-01

    Random numbers can be classified as either pseudo- or physical-random, in character. Pseudo-random numbers are generated by definite periodicity, so, their usefulness in cryptographic applications is somewhat limited. On the other hand, naturally-generated physical-random numbers have no calculable periodicity, thereby making them ideal for the task. Diode lasers' considerable wideband noise gives them tremendous capacity for generating physical-random numbers, at a high rate of speed. We measured a diode laser's output with a fast photo detector, and evaluated the binary-numbers from the diode laser's frequency noise characteristics. We then identified and evaluated the binary-number-line's statistical properties. We also investigate the possibility that much faster physical-random number parallel-generation is possible, using separate outputs of different optical-path length and character, which we refer to as "coherence collapse".

  3. Super fast physical-random number generation using laser diode frequency noises

    Science.gov (United States)

    Ushiki, Tetsuro; Doi, Kohei; Maehara, Shinya; Sato, Takashi; Ohkawa, Masashi; Ohdaira, Yasuo

    2011-02-01

    Random numbers can be classified as either pseudo- or physical-random in character. Pseudo-random numbers' periodicity renders them inappropriate for use in cryptographic applications, but naturally-generated physical-random numbers have no calculable periodicity, thereby making them ideally-suited to the task. The laser diode naturally produces a wideband "noise" signal that is believed to have tremendous capacity and great promise, for the rapid generation of physical-random numbers for use in cryptographic applications. We measured a laser diode's output, at a fast photo detector and generated physical-random numbers from frequency noises. We then identified and evaluated the binary-number-line's statistical properties. The result shows that physical-random number generation, at speeds as high as 40Gbps, is obtainable, using the laser diode's frequency noise characteristic.

  4. Response of CMS avalanche photo-diodes to low energy neutrons

    Science.gov (United States)

    Brown, R. M.; Deiters, K.; Ingram, Q.; Renker, D.

    2012-12-01

    The response of the Avalanche Photo-diodes (APDs) installed in the CMS detector at the LHC to neutrons from 241AmBe and 252Cf sources is reported. Signals in size equivalent to those of up to 106 photo-electrons with the nominal APD gain are observed. Measurements with an APD with the protective epoxy coating removed and with the source placed behind the APD show that there is an important response due to recoil protons from neutron interactions with the hydrogen in the epoxy, in addition to signals from neutron interactions with the silicon of the diode. The effective gain of these signals is much smaller than the diode's nominal gain.

  5. Achievement of high diode sensitivity via spin torque-induced resonant expulsion in vortex magnetic tunnel junction

    Science.gov (United States)

    Tsunegi, Sumito; Taniguchi, Tomohiro; Yakushiji, Kay; Fukushima, Akio; Yuasa, Shinji; Kubota, Hitoshi

    2018-05-01

    We investigated the spin-torque diode effect in a magnetic tunnel junction with FeB free layer. Vortex-core expulsion was observed near the boundary between vortex and uniform states. A high diode voltage of 24 mV was obtained with alternative input power of 0.3 µW, corresponding to huge diode sensitivity of 80,000 mV/mW. In the expulsion region, a broad peak in the high frequency region was observed, which is attributed to the weak excitation of uniform magnetization by thermal noise. The high diode sensitivity is of great importance for device applications such as telecommunications, radar detectors, and high-speed magnetic-field sensors.

  6. Design and experimental testing of air slab caps which convert commercial electron diodes into dual purpose, correction-free diodes for small field dosimetry

    Energy Technology Data Exchange (ETDEWEB)

    Charles, P. H., E-mail: paulcharles111@gmail.com [Department of Radiation Oncology, Princess Alexandra Hospital, Ipswich Road, Woolloongabba, Brisbane, Queensland 4102, Australia and School of Chemistry, Physics and Mechanical Engineering, Queensland University of Technology, GPO Box 2434, Brisbane, Queensland 4001 (Australia); Cranmer-Sargison, G. [Department of Medical Physics, Saskatchewan Cancer Agency, 20 Campus Drive, Saskatoon, Saskatchewan S7L 3P6, Canada and College of Medicine, University of Saskatchewan, 107 Wiggins Road, Saskatoon, Saskatchewan S7N 5E5 (Canada); Thwaites, D. I. [Institute of Medical Physics, School of Physics, University of Sydney, New South Wales 2006 (Australia); Kairn, T. [School of Chemistry, Physics and Mechanical Engineering, Queensland University of Technology, GPO Box 2434, Brisbane, Queensland 4001, Australia and Genesis CancerCare Queensland, The Wesley Medical Centre, Suite 1, 40 Chasely Street, Auchenflower, Brisbane, Queensland 4066 (Australia); Crowe, S. B.; Langton, C. M.; Trapp, J. V. [School of Chemistry, Physics and Mechanical Engineering, Queensland University of Technology, GPO Box 2434, Brisbane, Queensland 4001 (Australia); Pedrazzini, G. [Genesis CancerCare Queensland, The Wesley Medical Centre, Suite 1, 40 Chasely Street, Auchenflower, Brisbane, Queensland 4066 (Australia); Aland, T.; Kenny, J. [Epworth Radiation Oncology, 89 Bridge Road, Richmond, Melbourne, Victoria 3121 (Australia)

    2014-10-15

    Purpose: Two diodes which do not require correction factors for small field relative output measurements are designed and validated using experimental methodology. This was achieved by adding an air layer above the active volume of the diode detectors, which canceled out the increase in response of the diodes in small fields relative to standard field sizes. Methods: Due to the increased density of silicon and other components within a diode, additional electrons are created. In very small fields, a very small air gap acts as an effective filter of electrons with a high angle of incidence. The aim was to design a diode that balanced these perturbations to give a response similar to a water-only geometry. Three thicknesses of air were placed at the proximal end of a PTW 60017 electron diode (PTWe) using an adjustable “air cap”. A set of output ratios (OR{sub Det}{sup f{sub c}{sub l}{sub i}{sub n}}) for square field sizes of side length down to 5 mm was measured using each air thickness and compared to OR{sub Det}{sup f{sub c}{sub l}{sub i}{sub n}} measured using an IBA stereotactic field diode (SFD). k{sub Q{sub c{sub l{sub i{sub n,Q{sub m{sub s{sub r}{sup f{sub c}{sub l}{sub i}{sub n},f{sub m}{sub s}{sub r}}}}}}}}} was transferred from the SFD to the PTWe diode and plotted as a function of air gap thickness for each field size. This enabled the optimal air gap thickness to be obtained by observing which thickness of air was required such that k{sub Q{sub c{sub l{sub i{sub n,Q{sub m{sub s{sub r}{sup f{sub c}{sub l}{sub i}{sub n},f{sub m}{sub s}{sub r}}}}}}}}} was equal to 1.00 at all field sizes. A similar procedure was used to find the optimal air thickness required to make a modified Sun Nuclear EDGE detector (EDGEe) which is “correction-free” in small field relative dosimetry. In addition, the feasibility of experimentally transferring k{sub Q{sub c{sub l{sub i{sub n,Q{sub m{sub s{sub r}{sup f{sub c}{sub l}{sub i}{sub n},f{sub m}{sub s}{sub r

  7. Measurement of central nickel density in Doublet III plasmas with a soft x-ray diode array

    International Nuclear Information System (INIS)

    Groebner, R.J.; Jahns, G.L.; Ejima, S.; Hsieh, C.L.

    1985-01-01

    An array of soft x-ray diodes has been used to obtain central nickel densities for discharges in the Doublet III tokamak, during operation with an inconel primary limiter, in which nickel L-line radiation dominated the diode signals. The nature of the diode signals is determined primarily by comparison with soft x-ray spectra. The contribution of the continuum portion of the spectra to the central diode signal can be calculated and compared to the observed signal. When the diode signal is dominated by nickel L-line emission, the observed signal is considerably larger than the calculated continuum contribution. Chordal data from the array of diodes are inverted to provide the spatial profile of soft x-ray emission. Because the diodes are absolute detectors of radiation, the soft x-ray emission profile is used to obtain the absolute nickel concentration and density profile in the center of the plasma. A computer code, including over 100 nickel L-line transitions, has been developed to obtain the nickel density. The nickel L-line cooling rate, calculated with the code, is presented. The nickel density obtained by this technique agrees well with that obtained from the K/sub α/ line intensity measured with a soft x-ray spectrometer and that obtained from a bolometric measurement of central radiated power coupled with a coronal equilibrium model of the radiation

  8. Radiation detector

    International Nuclear Information System (INIS)

    Conrad, B.; Finkenzeller, J.; Kiiehn, G.; Lichtenberg, W.

    1984-01-01

    In an exemplary embodiment, a flat radiation beam is detected having a common electrode disposed parallel to the beam plane at one side and a common support with a series of individual conductors providing electrodes opposite successive portions of the common electrode and lying in a plane also parallel to the beam plane. The beam may be fan-shaped and the individual electrodes may be aligned with respective ray paths separated by uniform angular increments in the beam plane. The individual conductors and the connection thereof to the exterior of the detector housing may be formed on an insulator which can be folded into a T-shape for leading the supply conductors for alternate individual conductors toward terminals at opposite sides of the chamber

  9. Particle detectors

    CERN Document Server

    Hilke, Hans Jürgen; Joram, Christian; CERN. Geneva

    1991-01-01

    Lecture 5: Detector characteristics: ALEPH Experiment cut through the devices and events - Discuss the principles of the main techniques applied to particle detection ( including front-end electronics), the construction and performance of some of the devices presently in operartion and a few ideas on the future performance. Lecture 4-pt. b Following the Scintillators. Lecture 4-pt. a : Scintillators - Used for: -Timing (TOF, Trigger) - Energy Measurement (Calorimeters) - Tracking (Fibres) Basic scintillation processes- Inorganic Scintillators - Organic Scintil - Discuss the principles of the main techniques applied to particle detection ( including front-end electronics), the construction and performance of some of the devices presently in operation and a fiew ideas on future developpement session 3 - part. b Following Calorimeters lecture 3-pt. a Calorimeters - determine energy E by total absorption of charged or neutral particles - fraction of E is transformed into measurable quantities - try to acheive sig...

  10. Smoke detectors

    International Nuclear Information System (INIS)

    Bryant, J.

    1979-01-01

    An ionization smoke detector consisting of two electrodes defining an ionization chamber permitting entry of smoke, a radioactive source to ionize gas in the chamber and a potential difference applied across the first and second electrodes to cause an ion current to flow is described. The current is affected by entry of smoke. An auxiliary electrode is positioned in the ionization chamber between the first and second electrodes, and it is arranged to maintain or create a potential difference between the first electrode and the auxiliary electrode. The auxiliary electrode may be used for testing or for adjustment of sensitivity. A collector electrode divides the chamber into two regions with the auxiliary electrode in the outer sensing region. (U.K.)

  11. Ionization detector

    International Nuclear Information System (INIS)

    Solomon, E.E.

    1980-01-01

    A safe and reliable apparatus for detecting products of combustion and aerosols in the atmosphere was developed which uses a beta source. It is easy to adjust for optimum performance. The ionization detector comprises a double chamber; one of the chambers is the basic sensing chamber. The sensing chamber is ported to both the secondary chambers to account for slow ambient changes in the atmosphere outside of the chamber. The voltages from the ionization chamber are adjusted with electrodes in each chamber. The ionization chamber contains baffles to direct the air to be sensed as well as an electrostatic screen. A unique electronic circuit provides an inexpensive and reliable means for detecting the signal change which occurs in the ionization chamber. The decision level of the alarm circuit can be adjusted to allow for any desired sensitivity. (D.N.)

  12. Factors affecting the energy resolution in alpha particle spectrometry with silicon diodes

    International Nuclear Information System (INIS)

    Camargo, Fabio de.

    2005-01-01

    In this work are presented the studies about the response of a multi-structure guard rings silicon diode for detection and spectrometry of alpha particles. This ion-implanted diode (Al/p + /n/n + /Al) was processed out of 300 μm thick, n type substrate with a resistivity of 3 kΩ·cm and an active area of 4 mm 2 . In order to use this diode as a detector, the bias voltage was applied on the n + side, the first guard ring was grounded and the electrical signals were readout from the p + side. These signals were directly sent to a tailor made preamplifier, based on the hybrid circuit A250 (Amptek), followed by a conventional nuclear electronic. The results obtained with this system for the direct detection of alpha particles from 241 Am showed an excellent response stability with a high detection efficiency (≅ 100 %). The performance of this diode for alpha particle spectrometry was studied and it was prioritized the influence of the polarization voltage, the electronic noise, the temperature and the source-diode distance on the energy resolution. The results showed that the major contribution for the deterioration of this parameter is due to the diode dead layer thickness (1 μm). However, even at room temperature, the energy resolution (FWHM = 18.8 keV) measured for the 5485.6 MeV alpha particles ( 241 Am) is comparable to those obtained with ordinary silicon barrier detectors frequently used for these particles spectrometry. (author)

  13. Silicon radiation detectors

    International Nuclear Information System (INIS)

    Lutz, G.

    1995-01-01

    An introduction to and an overview of function principles and properties of semiconductor radiation detectors is attempted. The paper is addressed to people interested in detector development but not already experts in the field of semiconductor detectors. (orig.)

  14. Electronics for the Si detectors in APEX

    International Nuclear Information System (INIS)

    Wilt, P.R.; Betts, R.R.; Freer, M.

    1994-01-01

    APEX (ATLAS Positron EXperiment), a collaborative effort of ANL, FSU, MSU/NSCL, Princeton, Queen's, Rochester, Washington and Yale, is an experiment to study positron and electron production in very heavy ion collisions. The electrons and positrons are detected with two detector arrays, each consisting of 216 1 mm thick Si PIN diodes, and their energy and time-of-flight are measured. The number of detectors and limited space made it necessary to develop a system that could efficiently process and transfer signals from the detectors to the charge sensing ADC's and data readout electronics as well as monitor the condition of the detectors. The discussion will cover the electronics designed for the Si detectors, including the charge amplifier, ''Mother board'' for the charge amplifiers, 8 channel Shaper, 16 channel Constant Fraction Discriminator (CFD), 16 channel Peak-to-FERA (PTF) and the integration of the CFD and PTF with Charge sensing ADC's. Function and performance of the individual modules as well as the system as a whole will be discussed

  15. Solid-state radiation detectors for active personal dosimetry and radiations source tracking

    International Nuclear Information System (INIS)

    Talpalariu, Corneliu; Talpalariu, Jeni; Matei, Corina; Lita, Ioan; Popescu, Oana

    2010-01-01

    We report on the design of the readout electronics using PIN diode radiation detector of 5 mm thickness for nuclear safety and active personal dosimetry. Our effort consisted in designing and fabricating the electronics to reflect the needs of gamma radiations dosimetry and hybrids PIN diode arrays for charged particle detectors. We report results obtained during testing and characterizing the new devices in gamma fields, operating at room temperature. There were determined the energy spectrum resolution, radiation hardness and readout rate. Also, data recording methods and parallel acquisition problems from a transducer matrix are presented. (authors)

  16. Feasibility study into the use of silicon photo-diodes for the alignment of collimated X-rays on the SRS

    CERN Document Server

    Buffey, S G

    1999-01-01

    Dynamic alignment of beam on the crystal during data collection was studied. Development of silicon photo-diode detectors for the vacuum ultraviolet and soft X-ray spectral regions has led to the use of such devices as beam alignment tools for Protein Crystallography beamlines on the Synchrotron Radiation Source at Daresbury. Quadrant photo-diodes are used to provide signals proportional to the number of photons hitting each photo-diode, these are amplified, digitised and then summed to give the x-y position of the beam centre. (author)

  17. Calibration of detector efficiency of neutron detector

    International Nuclear Information System (INIS)

    Guo Hongsheng; He Xijun; Xu Rongkun; Peng Taiping

    2001-01-01

    BF 3 neutron detector has been set up. Detector efficiency is calibrated by associated particle technique. It is about 3.17 x 10 -4 (1 +- 18%). Neutron yield of neutron generator per pulse (10 7 /pulse) is measured by using the detector

  18. Study on photon sensitivity of silicon diodes related to materials used for shielding

    International Nuclear Information System (INIS)

    Moiseev, T.

    1999-01-01

    Large area silicon diodes used in electronic neutron dosemeters have a significant over-response to X- and gamma-rays, highly non-linear at photon energies below 200 keV. This over-response to photons is proportional to the diode's active area and strongly affects the neutron sensitivity of such dosemeters. Since silicon diodes are sensitive to light and electromagnetic fields, most diode detector assemblies are provided with a shielding, sometimes also used as radiation filter. In this paper, the influence of materials covering the diode's active area is investigated using the MCNP-4A code by estimating the photon induced pulses in a typical silicon wafer (300 μm thickness and 1 cm diameter) when provided with a front case cover. There have been simulated small-size diode front covers made of several materials with low neutron interaction cross-sections like aluminium, TEFLON, iron and lead. The estimated number of induced pulses in the silicon wafer is calculated for each type of shielding at normal photon incidence for several photon energies from 9.8 keV up to 1.15 MeV and compared with that in a bare silicon wafer. The simulated pulse height spectra show the origin of the photon-induced pulses in silicon for each material used as protective cover: the photoelectric effect for low Z front case materials at low-energy incident photons (up to about 65 keV) and the Compton and build-up effects for high Z case materials at higher photon energies. A simple means to lower and flatten the photon response of silicon diodes over an extended X- and gamma rays energy range is proposed by designing a composed photon filter. (author)

  19. Study on Photon Sensitivity of Silicon Diodes Related to Materials Used for Shielding

    International Nuclear Information System (INIS)

    Moiseev, T.

    2000-01-01

    Large area Silicon diodes used in electronic neutron dosemeters have a significant over-response to X and gamma rays, highly non-linear at photon energies below 200 keV. This over-response to photons is proportional to the diodes active area and strongly affects the neutron sensitivity of such dosemeters. Since Silicon diodes are sensitive to light and electromagnetic fields, most diode detector assemblies are provided with a shielding, sometimes also used as radiation filter. In this paper, the influence of materials covering the diode's active area is investigated using the MCNP-4A code by estimating the photon induced pulses in a typical silicon wafer (300 μm thickness and 1 cm diameter) when provided with a front case cover. There have been simulated small-size diode front covers made of several materials with low neutron interaction cross-sections like aluminium, TEFLON, iron and lead. The estimated number of induced pulses in the silicon wafer is calculated for each type of shielding at normal photon incidence for several photon energies from 9.8 keV up to 1.15 MeV and compared with that in a bare silicon wafer. The simulated pulse height spectra show the origin of the photon induced pulses in silicon for each material used as protective cover: the photoelectric effect for low Z front case materials at low energy incident photons (up to about 65 keV) and the Compton and build-up effects for high Z case materials at higher photon energies. A simple means to lower and flatten the photon response of silicon diodes over an extended X and gamma rays energy range is proposed by designing a composed photon filter. (author)

  20. A single-molecule diode

    Science.gov (United States)

    Elbing, Mark; Ochs, Rolf; Koentopp, Max; Fischer, Matthias; von Hänisch, Carsten; Weigend, Florian; Evers, Ferdinand; Weber, Heiko B.; Mayor, Marcel

    2005-01-01

    We have designed and synthesized a molecular rod that consists of two weakly coupled electronic π -systems with mutually shifted energy levels. The asymmetry thus implied manifests itself in a current–voltage characteristic with pronounced dependence on the sign of the bias voltage, which makes the molecule a prototype for a molecular diode. The individual molecules were immobilized by sulfur–gold bonds between both electrodes of a mechanically controlled break junction, and their electronic transport properties have been investigated. The results indeed show diode-like current–voltage characteristics. In contrast to that, control experiments with symmetric molecular rods consisting of two identical π -systems did not show significant asymmetries in the transport properties. To investigate the underlying transport mechanism, phenomenological arguments are combined with calculations based on density functional theory. The theoretical analysis suggests that the bias dependence of the polarizability of the molecule feeds back into the current leading to an asymmetric shape of the current–voltage characteristics, similar to the phenomena in a semiconductor diode. PMID:15956208

  1. Molecular diodes in optical rectennas

    Science.gov (United States)

    Duché, David; Palanchoke, Ujwol; Terracciano, Luigi; Dang, Florian-Xuan; Patrone, Lionel; Le Rouzo, Judikael; Balaban, Téodore Silviu; Alfonso, Claude; Charai, Ahmed; Margeat, Olivier; Ackermann, Jorg; Gourgon, Cécile; Simon, Jean-Jacques; Escoubas, Ludovic

    2016-09-01

    The photo conversion efficiencies of the 1st and 2nd generat ion photovoltaic solar cells are limited by the physical phenomena involved during the photo-conversion processes. An upper limit around 30% has been predicted for a monojunction silicon solar cell. In this work, we study 3rd generation solar cells named rectenna which could direct ly convert visible and infrared light into DC current. The rectenna technology is at odds with the actual photovoltaic technologies, since it is not based on the use of semi-conducting materials. We study a rectenna architecture consist ing of plasmonic nano-antennas associated with rectifying self assembled molecular diodes. We first opt imized the geometry of plasmonic nano-antennas using an FDTD method. The optimal antennas are then realized using a nano-imprint process and associated with self assembled molecular diodes in 11- ferrocenyl-undecanethiol. Finally, The I(V) characterist ics in darkness of the rectennas has been carried out using an STM. The molecular diodes exhibit averaged rect ification ratios of 5.

  2. MUON DETECTOR

    CERN Multimedia

    F. Gasparini

    DT As announced in the previous Bulletin MU DT completed the installation of the vertical chambers of barrel wheels 0, +1 and +2. 242 DT and RPC stations are now installed in the negative barrel wheels. The missing 8 (4 in YB-1 and 4 in YB-2) chambers can be installed only after the lowering of the two wheels into the UX cavern, which is planned for the last quarter of the year. Cabling on the surface of the negative wheels was finished in May after some difficulties with RPC cables. The next step was to begin the final commissioning of the wheels with the final trigger and readout electronics. Priority was giv¬en to YB0 in order to check everything before the chambers were covered by cables and services of the inner detectors. Commissioning is not easy since it requires both activity on the central and positive wheels underground, as well as on the negative wheels still on the surface. The DT community is requested to commission the negative wheels on surface to cope with a possible lack of time a...

  3. Modeling silicon diode energy response factors for use in therapeutic photon beams.

    Science.gov (United States)

    Eklund, Karin; Ahnesjö, Anders

    2009-10-21

    Silicon diodes have good spatial resolution, which makes them advantageous over ionization chambers for dosimetry in fields with high dose gradients. However, silicon diodes overrespond to low-energy photons, that are more abundant in scatter which increase with large fields and larger depths. We present a cavity-theory-based model for a general response function for silicon detectors at arbitrary positions within photon fields. The model uses photon and electron spectra calculated from fluence pencil kernels. The incident photons are treated according to their energy through a bipartition of the primary beam photon spectrum into low- and high-energy components. Primary electrons from the high-energy component are treated according to Spencer-Attix cavity theory. Low-energy primary photons together with all scattered photons are treated according to large cavity theory supplemented with an energy-dependent factor K(E) to compensate for energy variations in the electron equilibrium. The depth variation of the response for an unshielded silicon detector has been calculated for 5 x 5 cm(2), 10 x 10 cm(2) and 20 x 20 cm(2) fields in 6 and 15 MV beams and compared with measurements showing that our model calculates response factors with deviations less than 0.6%. An alternative method is also proposed, where we show that one can use a correlation with the scatter factor to determine the detector response of silicon diodes with an error of less than 3% in 6 MV and 15 MV photon beams.

  4. Modeling silicon diode energy response factors for use in therapeutic photon beams

    International Nuclear Information System (INIS)

    Eklund, Karin; Ahnesjoe, Anders

    2009-01-01

    Silicon diodes have good spatial resolution, which makes them advantageous over ionization chambers for dosimetry in fields with high dose gradients. However, silicon diodes overrespond to low-energy photons, that are more abundant in scatter which increase with large fields and larger depths. We present a cavity-theory-based model for a general response function for silicon detectors at arbitrary positions within photon fields. The model uses photon and electron spectra calculated from fluence pencil kernels. The incident photons are treated according to their energy through a bipartition of the primary beam photon spectrum into low- and high-energy components. Primary electrons from the high-energy component are treated according to Spencer-Attix cavity theory. Low-energy primary photons together with all scattered photons are treated according to large cavity theory supplemented with an energy-dependent factor K(E) to compensate for energy variations in the electron equilibrium. The depth variation of the response for an unshielded silicon detector has been calculated for 5 x 5 cm 2 , 10 x 10 cm 2 and 20 x 20 cm 2 fields in 6 and 15 MV beams and compared with measurements showing that our model calculates response factors with deviations less than 0.6%. An alternative method is also proposed, where we show that one can use a correlation with the scatter factor to determine the detector response of silicon diodes with an error of less than 3% in 6 MV and 15 MV photon beams.

  5. Review of surface dose detectors in radiotherapy

    LENUS (Irish Health Repository)

    O'Shea, E.

    2006-11-20

    Several instruments have been used to measure absorbed radiation dose under non-electronic equilibrium conditions, such as in the build-up region or near the interface between two different media, including the surface. Many of these detectors are discussed in this paper. A common method of measuring the absorbed dose distribution and electron contamination in the build-up region of high-energy beams for radiation therapy is by means of parallel-plate ionisation chambers. Thermoluminescent dosimeters (TLDs), diodes and radiographic film have also been used to obtain surface dose measurements. The diamond detector was used recently by the author in an investigation on the effects of beam-modifying devices on skin dose and it is also described in this report

  6. Studies of the sensitivity dependence of float zone silicon diodes on gamma absorbed dose

    International Nuclear Information System (INIS)

    Pascoalino, K.C.S.; Santos, T.C. dos; Barbosa, R.F.; Camargo, F. de; Goncalves, J.A.C.; Bueno, C.C.

    2011-01-01

    Full text: Several advantages of silicon diodes which include small size, low cost, high sensitivity and wide availability, make them suitable for dosimetry and for radiation field mapping. However, the small radiation tolerance of ordinary silicon devices has imposed constraints on their application in intense radiation fields such as found in industrial radiation processes. This scenario has been changed with the development of radiation hard silicon devices to be used as track detectors in high-energy physics experiments. Particularly, in this work it is presented the dosimetric results obtained with a batch of nine junction silicon diodes developed, in the framework of CERN RD50 Collaboration, as good candidates for improved radiation hardness. These diodes were produced with 300 micrometer n-type silicon substrate grown by standard float zone technique and processed by the Microelectronics Center of Helsinki University of Technology. The samples irradiation was performed using a Co-60 irradiator (Gammacell 220) which delivers a dose-rate of 2 kGy/h. During the irradiation, the unbiased diodes were connected through low-noise coaxial cables to the input of a KEITHLEY 617 electrometer, in order to monitor the devices photocurrent as a function of the exposure time. To study the response uniformity of the batch of nine diodes as well the sensitivity dependence on the absorbed dose, they were irradiated with different doses from 5 kGy up to 50 kGy. The sensitivity response of each device was investigated through the on-line measurements of the current signals as a function of the exposure time. For doses up to 5 kGy, all diodes exhibited a current decay of almost six percent in comparison with the value registered at the start-time of the irradiation. However, this decrease in the current sensitivity is much smaller than those observed with ordinary diodes for the same absorbed dose. The dose-response curves of the devices were also investigated through the plot

  7. The SISWICH, a detector telescope with intrinsic calibration

    International Nuclear Information System (INIS)

    Friese, J.; Gillitzer, A.; Koerener, H.J.; Reinhold, J.; Peter, M.; Maier, M.R.

    1992-10-01

    Phoswich counters have gained widespread popularity as detectors for medium energy charged particles. They provide adequate energy resolution and particle identification up to atomic numbers Z = 20. However, the question of calibration has not been resolved satisfactorily. To overcome this difficulty we have built a Silicon-Scintillator SandWICH (SISWICH). This detector consists of a silicon PIN photo diode glued to the front of a CsI (T ell) scintillator crystal. The signal coming from the PIN diode contains the energy loss of the particle in the silicon, which is fast (nuclear counter effect), and the light output of the scintillator which is slow. The component coming from the nuclear counter effect can be calibrated with a pulser. Therefore, since the energy loss of a particle with known Z has been measured, its energy is known, and this can be used to calibrate the signal from the scintillator. Results will be shown

  8. Electron injection in diodes with field emission

    International Nuclear Information System (INIS)

    Denavit, J.; Strobel, G.L.

    1986-01-01

    This paper presents self-consistent steady-state solutions of the space charge, transmitted current, and return currents in diodes with electron injection from the cathode and unlimited field emission of electrons and ions from both electrodes. Time-dependent particle simulations of the diode operation confirm the analytical results and show how these steady states are reached. The results are applicable to thermionic diodes and to photodiodes

  9. Electromagnetic wave analogue of electronic diode

    OpenAIRE

    Shadrivov, Ilya V.; Powell, David A.; Kivshar, Yuri S.; Fedotov, Vassili A.; Zheludev, Nikolay I.

    2010-01-01

    An electronic diode is a nonlinear semiconductor circuit component that allows conduction of electrical current in one direction only. A component with similar functionality for electromagnetic waves, an electromagnetic isolator, is based on the Faraday effect of the polarization state rotation and is also a key component of optical and microwave systems. Here we demonstrate a chiral electromagnetic diode, which is a direct analogue of an electronic diode: its functionality is underpinned by ...

  10. Laser diode technology for coherent communications

    Science.gov (United States)

    Channin, D. J.; Palfrey, S. L.; Toda, M.

    1989-01-01

    The effect of diode laser characteristics on the overall performance capabilities of coherent communication systems is discussed. In particular, attention is given to optical performance issues for diode lasers in coherent systems, measurements of key performance parameters, and optical requirements for coherent single-channel and multichannel communication systems. The discussion also covers limitations imposed by diode laser optical performance on multichannel system capabilities and implications for future developments.

  11. Thermic diode performance characteristics and design manual

    Science.gov (United States)

    Bernard, D. E.; Buckley, S.

    1979-01-01

    Thermic diode solar panels are a passive method of space and hot water heating using the thermosyphon principle. Simplified methods of sizing and performing economic analyses of solar heating systems had until now been limited to passive systems. A mathematical model of the thermic diode including its high level of stratification has been constructed allowing its performance characteristics to be studied. Further analysis resulted in a thermic diode design manual based on the f-chart method.

  12. Detector simulation needs for detector designers

    International Nuclear Information System (INIS)

    Hanson, G.G.

    1987-11-01

    Computer simulation of the components of SSC detectors and of the complete detectors will be very important for the designs of the detectors. The ratio of events from interesting physics to events from background processes is very low, so detailed understanding of detector response to the backgrounds is needed. Any large detector for the SSC will be very complex and expensive and every effort must be made to design detectors which will have excellent performance and will not have to undergo major rebuilding. Some areas in which computer simulation is particularly needed are pattern recognition in tracking detectors and development of shower simulation code which can be trusted as an aid in the design and optimization of calorimeters, including their electron identification performance. Existing codes require too much computer time to be practical and need to be compared with test beam data at energies of several hundred GeV. Computer simulation of the processing of the data, including electronics response to the signals from the detector components, processing of the data by microprocessors on the detector, the trigger, and data acquisition will be required. In this report we discuss the detector simulation needs for detector designers

  13. Calibration of the OPAL jet chamber with UV laser beams. Measurement of the beam position with position-sensitive silicon diodes (PSD)

    International Nuclear Information System (INIS)

    Koch, J.

    1990-03-01

    The OPAL jet chamber is calibrated with tracks produced by UV laser beams. Lateral effect diodes are used for monitoring the laser beam location in the detector. These position sensitive detectors locate the point of impact in two dimensions by the charge division method. Measurements on several diodes were carried out in order to calibrate these devices and to investigate to observed pin-cushion distortion. Using the telegraphers equation suitable expressions were obtained for describing the observed behaviour. It was shown that the magnetic field of OPAL as well as the UV laser wavelength and puls duration had no influence on the position information. (orig.)

  14. Focusing experiments with light ion diodes

    International Nuclear Information System (INIS)

    Johnson, D.L.

    1978-01-01

    A review of recent experimental and theoretical work at Sandia Laboratories on magnetically insulated single stage ion diodes for inertial confinement fusion experiments is presented. The production, focusing, and numerical simulation of a 0.5 TW annular proton beam using the Proto I dual transmission line generator is described. The modular magnetically insulated ion diode for the Hydra generator is also described along with recent experimental results. A brief description of how an array of modular diodes similar to the Hydra magnetically insulated diode could be used on the EBFA I generator for breakeven fusion experiments is presented

  15. Progress in semiconductor laser diodes: SPIE volume 723

    International Nuclear Information System (INIS)

    Eichen, E.

    1987-01-01

    This book contains proceedings arranged under the following session headings: High power diode lasers; single emitters and arrays; Ultrahigh speed modulation of semiconductor diode lasers; Coherence and linewidth stabilized semiconductor lasers; and Growth, fabrication, and evaluation of laser diodes

  16. Developing a fast simulator for irradiated silicon detectors

    CERN Document Server

    Diez Gonzalez-Pardo, Alvaro

    2015-01-01

    Simulation software for irradiated silicon detectors has been developed on the basis of an already existing C++ simulation software called TRACS[1]. This software has been already proven useful in understanding non-irradiated silicon diodes and microstrips. In addition a wide variety of user-focus features has been implemented to improve on TRACS flexibility. Such features include an interface to allow any program to leverage TRACS functionalities, a configuration file and improved documentation.

  17. Experience with parallel optical link for the CDF silicon detector

    International Nuclear Information System (INIS)

    Hou, S.

    2003-01-01

    The Dense Optical Interface Module (DOIM) is a byte-wide optical link developed for the Run II upgrade of the CDF silicon tracking system [1]. The module consists of a transmitter with a laser-diode array for conversion of digitized detector signals to light outputs, a 22 m optical fiber ribbon cable for light transmission, and a receiver converting the light pulses back to electrical signals. We report on the design feature, characteristics, and radiation tolerance

  18. Dosimetric characteristics of a new unshielded silicon diode and its application in clinical photon and electron beams

    International Nuclear Information System (INIS)

    Griessbach, Irmgard; Lapp, Markus; Bohsung, Joerg; Gademann, Guenther; Harder, Dietrich

    2005-01-01

    Shielded p-silicon diodes, frequently applied in general photon-beam dosimetry, show certain imperfections when applied in the small photon fields occurring in stereotactic or intensity modulated radiotherapy (IMRT), in electron beams and in the buildup region of photon beam dose distributions. Using as a study object the shielded p-silicon diode PTW 60008, well known for its reliable performance in general photon dosimetry, we have identified these imperfections as effects of electron scattering at the metallic parts of the shielding. In order to overcome these difficulties a new, unshielded diode PTW 60012 has been designed and manufactured by PTW Freiburg. By comparison with reference detectors, such as thimble and plane-parallel ionization chambers and a diamond detector, we could show the absence of these imperfections. An excellent performance of the new unshielded diode for the special dosimetric tasks in small photon fields, electron beams and build-up regions of photon beams has been observed. The new diode also has an improved angular response. However, due to its over-response to low-energy scattered photons, its recommended range of use does not include output factor measurements in large photon fields, although this effect can be compensated by a thin auxiliary lead shield

  19. Active volume studies with depleted and enriched BEGe detectors

    Energy Technology Data Exchange (ETDEWEB)

    Sturm, Katharina von [Eberhard Karls Universitaet Tuebingen (Germany); Universita degli Studi di Padova, Padua (Italy); Collaboration: GERDA-Collaboration

    2013-07-01

    The Gerda experiment is currently taking data for the search of the 0νββ decay in {sup 76}Ge. In 2013, 30 newly manufactured Broad Energy Germanium (BEGe) diodes will be deployed which will double the active mass within Gerda. These detectors were fabricated from high-purity germanium enriched in {sup 76}Ge and tested in the HADES underground laboratory, owned by SCK.CEN, in Mol, Belgium. As the BEGes are source and detector at the same time, one crucial parameter is their active volume which directly enters into the evaluation of the half-life. This talk illustrates the dead layer and active volume determination of prototype detectors from depleted germanium as well as the newly produced detectors from enriched material, using gamma spectroscopy methods and comparing experimental results to Monte-Carlo simulations. Recent measurements and their results are presented, and systematic effects are discussed.

  20. Thermal blinding of gated detectors in quantum cryptography.

    Science.gov (United States)

    Lydersen, Lars; Wiechers, Carlos; Wittmann, Christoffer; Elser, Dominique; Skaar, Johannes; Makarov, Vadim

    2010-12-20

    It has previously been shown that the gated detectors of two commercially available quantum key distribution (QKD) systems are blindable and controllable by an eavesdropper using continuous-wave illumination and short bright trigger pulses, manipulating voltages in the circuit [Nat. Photonics 4, 686 (2010)]. This allows for an attack eavesdropping the full raw and secret key without increasing the quantum bit error rate (QBER). Here we show how thermal effects in detectors under bright illumination can lead to the same outcome. We demonstrate that the detectors in a commercial QKD system Clavis2 can be blinded by heating the avalanche photo diodes (APDs) using bright illumination, so-called thermal blinding. Further, the detectors can be triggered using short bright pulses once they are blind. For systems with pauses between packet transmission such as the plug-and-play systems, thermal inertia enables Eve to apply the bright blinding illumination before eavesdropping, making her more difficult to catch.

  1. High Frequency Amplitude Detector for GMI Magnetic Sensors

    Directory of Open Access Journals (Sweden)

    Aktham Asfour

    2014-12-01

    Full Text Available A new concept of a high-frequency amplitude detector and demodulator for Giant-Magneto-Impedance (GMI sensors is presented. This concept combines a half wave rectifier, with outstanding capabilities and high speed, and a feedback approach that ensures the amplitude detection with easily adjustable gain. The developed detector is capable of measuring high-frequency and very low amplitude signals without the use of diode-based active rectifiers or analog multipliers. The performances of this detector are addressed throughout the paper. The full circuitry of the design is given, together with a comprehensive theoretical study of the concept and experimental validation. The detector has been used for the amplitude measurement of both single frequency and pulsed signals and for the demodulation of amplitude-modulated signals. It has also been successfully integrated in a GMI sensor prototype. Magnetic field and electrical current measurements in open- and closed-loop of this sensor have also been conducted.

  2. Status of the KATRIN focal-plane detector

    Energy Technology Data Exchange (ETDEWEB)

    Seher, Agnes [Karlsruher Institute of Technology (KIT) (Germany). Institut fuer Kernphysik (IKP); Collaboration: KATRIN-Collaboration

    2016-07-01

    The KArlsruhe TRItium Neutrino (KATRIN) experiment aims to determine the mass of the electron anti-neutrino with a sensitivity of 200 meV/c{sup 2} by measuring the kinematics of tritium β-electrons close to the enpoint of the energy spectrum. The energy analysis of the experiment is performed with a high-resolution electrostatic spectrometer of MAC-E filter type which acts as an integranting high pass filter. Transmitted electrons are counted with a segmented silicon detector system located at the downstream end of the experiment. The detector system consists of two super-conducting solenoids (B{sub max}=6 T), a post-acceleration electrode, a detector wafer with silicon pixel-diodes, readout electronics as well as a calibration and monitoring devices. This talk gives an overview of the detector system and its current status as well as key performance parameters.

  3. Space-charge-limited-current diode model for amorphous silicon solar cell degradation

    International Nuclear Information System (INIS)

    Partain, L.D.

    1987-01-01

    A space-charge-limited-current (SCLI) diode model for trap controlled rectification in the dark is extended to a continuous trap distribution for p-i-n a-Si:H solar cells in the light. Light degradation, thermal annealing recovery, and 10% efficient device data are quantitatively fit with i layer, conduction electron concentrations between 1.95 (10 11 ) and 1.90 (10 12 ) cm -3 and band gap trap concentration densities between 7.66 (10 14 ) and 1.14 (10 18 ) cm -3 ev -1 for 0.2 to 0.5 eV below the conduction band edge (E/sub c/). Light exposure increased the trap density at 0.4 eV below E/sub c/ by a factor of 7. Annealing decreased the distance of the peak trap density from E/sub c/ by 0.2 eV. These results agree with trap distributions measured with field effect, DLTS, and ICTS and with theoretical models based on dangling bonds or on defect rearrangements. The model indicates that a minimum peak amplitude of 10 17 cm -3 eV -1 of trapping states is required at about 0.5 eV below E/sub c/ for high fill factors (FF) and open circuit voltages (V/sub oc/). Improved FF values of 0.76 are predicted for trap densities below 10 15 cm -3 eV -1 at 0.2 to 0.4 eV below E/sub c/. Increased V/sub oc/ values of 0.99 V are predicted for a peak trap density of 3.5 (10 17 ) cm -3 eV -1 at 0.5 eV below E/sub c/

  4. The GRANDE detector

    International Nuclear Information System (INIS)

    Adams, A.; Bond, R.; Coleman, L.; Rollefson, A.; Wold, D.; Bratton, C.B.; Gurr, H.; Kropp, W.; Nelson, M.; Price, L.R.; Reines, F.; Schultz, J.; Sobel, H.; Svoboda, R.; Yodh, G.; Burnett, T.; Chaloupka, V.; Wilkes, R.J.; Cherry, M.; Ellison, S.B.; Guzik, T.G.; Wefel, J.; Gaidos, J.; Loeffler, F.; Sembroski, G.; Wilson, C.; Goodman, J.; Haines, T.J.; Kielczewska, D.; Lane, C.; Steinberg, R.; Lieber, M.; Nagle, D.; Potter, M.; Tripp, R.

    1990-01-01

    In this paper we present a detector facility which meets the requirements outlined above for a next-generation instrument. GRANDE (Gamma Ray and Neutrino DEtector) is an imaging, water Cerenkov detector, which combines in one facility an extensive air shower array and a high-energy neutrino detector. (orig.)

  5. Spiral silicon drift detectors

    International Nuclear Information System (INIS)

    Rehak, P.; Gatti, E.; Longoni, A.; Sampietro, M.; Holl, P.; Lutz, G.; Kemmer, J.; Prechtel, U.; Ziemann, T.

    1988-01-01

    An advanced large area silicon photodiode (and x-ray detector), called Spiral Drift Detector, was designed, produced and tested. The Spiral Detector belongs to the family of silicon drift detectors and is an improvement of the well known Cylindrical Drift Detector. In both detectors, signal electrons created in silicon by fast charged particles or photons are drifting toward a practically point-like collection anode. The capacitance of the anode is therefore kept at the minimum (0.1pF). The concentric rings of the cylindrical detector are replaced by a continuous spiral in the new detector. The spiral geometry detector design leads to a decrease of the detector leakage current. In the spiral detector all electrons generated at the silicon-silicon oxide interface are collected on a guard sink rather than contributing to the detector leakage current. The decrease of the leakage current reduces the parallel noise of the detector. This decrease of the leakage current and the very small capacities of the detector anode with a capacitively matched preamplifier may improve the energy resolution of Spiral Drift Detectors operating at room temperature down to about 50 electrons rms. This resolution is in the range attainable at present only by cooled semiconductor detectors. 5 refs., 10 figs

  6. Determination of the 4 mm Gamma Knife helmet relative output factor using a variety of detectors

    International Nuclear Information System (INIS)

    Tsai, J.-S.; Rivard, Mark J.; Engler, Mark J.; Mignano, John E.; Wazer, David E.; Shucart, William A.

    2003-01-01

    Though the 4 mm Gamma Knife helmet is used routinely, there is disagreement in the Gamma Knife users community on the value of the 4 mm helmet relative output factor. A range of relative output factors is used, and this variation may impair observations of dose response and optimization of prescribed dose. To study this variation, measurements were performed using the following radiation detectors: silicon diode, diamond detector, radiographic film, radiochromic film, and TLD cubes. To facilitate positioning of the silicon diode and diamond detector, a three-dimensional translation micrometer was used to iteratively determine the position of maximum detector response. Positioning of the films and TLDs was accomplished by manufacturing custom holders for each technique. Results from all five measurement techniques indicate that the 4 mm helmet relative output factor is 0.868±0.014. Within the experimental uncertainties, this value is in good agreement with results obtained by other investigators using diverse techniques

  7. The bipolar silicon microstrip detector: A proposal for a novel precision tracking device

    International Nuclear Information System (INIS)

    Horisberger, R.

    1990-01-01

    It is proposed to combine the technology of fully depleted microstrip detectors fabricated on n doped high resistivity silicon with the concept of the bipolar transistor. This is done by adding a n ++ doped region inside the normal p + implanted region of the reverse biased p + n diode. The resulting structure has amplifying properties and is referred to as bipaolar pixel transistor. The simplest readout scheme of a bipolar pixel array by an aluminium strip bus leads to the bipolar microstrip detector. The bipolar pixel structure is expected to give a better signal-to-noise performance for the detection of minimum ionizing charged particle tracks than the normal silicon diode strip detector and therefore should allow in future the fabrication of thinner silicon detectors for precision tracking. (orig.)

  8. Laminated Amorphous Silicon Neutron Detector (pre-print)

    International Nuclear Information System (INIS)

    McHugh, Harry; Branz, Howard; Stradins, Paul; Xu, Yueqin

    2009-01-01

    An internal R and D project was conducted at the Special Technologies Laboratory (STL) of National Security Technologies, LLC (NSTec), to determine the feasibility of developing a multi-layer boron-10 based thermal neutron detector using the amorphous silicon (AS) technology currently employed in the manufacture of liquid crystal displays. The boron-10 neutron reaction produces an alpha that can be readily detected. A single layer detector, limited to an approximately 2-micron-thick layer of boron, has a theoretical sensitivity of about 3%; hence a thin multi-layer device with high sensitivity can theoretically be manufactured from single layer detectors. Working with National Renewable Energy Laboratory (NREL), an AS PiN diode alpha detector was developed and tested. The PiN diode was deposited on a boron-10 coated substrate. Testing confirmed that the neutron sensitivity was nearly equal to the theoretical value of 3%. However, adhesion problems with the boron-10 coating prevented successful development of a prototype detector. Future efforts will include boron deposition work and development of integrated AS signal processing circuitry.

  9. Improved designs of Si-based quantum wells and Schottky diodes for IR detection

    Energy Technology Data Exchange (ETDEWEB)

    Moeen, M., E-mail: moeen@kth.se [School of Information and Communication Technology, KTH Royal Institute of Technology, Stockholm, 16640, Kista (Sweden); Kolahdouz, M. [School of Electrical and Computer Engineering, University of Tehran, Tehran (Iran, Islamic Republic of); Salemi, A.; Abedin, A.; Östling, M. [School of Information and Communication Technology, KTH Royal Institute of Technology, Stockholm, 16640, Kista (Sweden); Radamson, H.H., E-mail: rad@kth.se [School of Information and Communication Technology, KTH Royal Institute of Technology, Stockholm, 16640, Kista (Sweden)

    2016-08-31

    Novel structures of intrinsic or carbon-doped multi quantum wells (MQWs) and intrinsic or carbon-doped Si Schottky diodes (SD), individually or in combination, have been manufactured to detect the infrared (IR) radiation. The carbon concentration in the structures was 5 × 10{sup 20} cm{sup −3} and the MQWs are located in the active part of the IR detector. A Schottky diode was designed and formed as one of the contacts (based on NiSi(C)/TiW) to MQWs where on the other side the structure had an Ohmic contact. The thermal response of the detectors is expressed in terms of temperature coefficient of resistance (TCR) and the quality of the electrical signal is quantified by the signal-to-noise ratio. The noise measurements provide the K{sub 1/f} parameter which is obtained from the power spectrum density. An excellent value of TCR = − 6%/K and K{sub 1/f} = 4.7 × 10{sup −14} was measured for the detectors which consist of the MQWs in series with the SD. These outstanding electrical results indicate a good opportunity to manufacture low cost Si-based IR detectors in the near future. - Highlights: • SiGe (C)/Si(C) multi quantum wells (MQWs) are evaluated to detect IR radiation. • Schottky diodes (SDs), individually or in series with MQWs are also fabricated. • Detectors consisted of MQWs in series with SD show excellent thermal sensing. • The noise values are also extremely low for MQWs in series with SD.

  10. Improved designs of Si-based quantum wells and Schottky diodes for IR detection

    International Nuclear Information System (INIS)

    Moeen, M.; Kolahdouz, M.; Salemi, A.; Abedin, A.; Östling, M.; Radamson, H.H.

    2016-01-01

    Novel structures of intrinsic or carbon-doped multi quantum wells (MQWs) and intrinsic or carbon-doped Si Schottky diodes (SD), individually or in combination, have been manufactured to detect the infrared (IR) radiation. The carbon concentration in the structures was 5 × 10 20 cm −3 and the MQWs are located in the active part of the IR detector. A Schottky diode was designed and formed as one of the contacts (based on NiSi(C)/TiW) to MQWs where on the other side the structure had an Ohmic contact. The thermal response of the detectors is expressed in terms of temperature coefficient of resistance (TCR) and the quality of the electrical signal is quantified by the signal-to-noise ratio. The noise measurements provide the K 1/f parameter which is obtained from the power spectrum density. An excellent value of TCR = − 6%/K and K 1/f = 4.7 × 10 −14 was measured for the detectors which consist of the MQWs in series with the SD. These outstanding electrical results indicate a good opportunity to manufacture low cost Si-based IR detectors in the near future. - Highlights: • SiGe (C)/Si(C) multi quantum wells (MQWs) are evaluated to detect IR radiation. • Schottky diodes (SDs), individually or in series with MQWs are also fabricated. • Detectors consisted of MQWs in series with SD show excellent thermal sensing. • The noise values are also extremely low for MQWs in series with SD.

  11. Semiconductor scintillator detector for gamma radiation

    International Nuclear Information System (INIS)

    Laan, F.T.V. der; Borges, V.; Zabadal, J.R.S.

    2015-01-01

    Nowadays the devices employed to evaluate individual radiation exposition are based on dosimetric films and thermoluminescent crystals, whose measurements must be processed in specific transductors. Hence, these devices carry out indirect measurements. Although a new generation of detectors based on semiconductors which are employed in EPD's (Electronic Personal Dosemeters) being yet available, it high producing costs and large dimensions prevents the application in personal dosimetry. Recent research works reports the development of new detection devices based on photovoltaic PIN diodes, which were successfully employed for detecting and monitoring exposition to X rays. In this work, we step forward by coupling a 2mm anthracene scintillator NE1, which converts the high energy radiation in visible light, generating a Strong signal which allows dispensing the use of photomultipliers. A low gain high performance amplifier and a digital acquisition device are employed to measure instantaneous and cumulative doses for energies ranging from X rays to Gamma radiation up to 2 MeV. One of the most important features of the PIN diode relies in the fact that it can be employed as a detector for ionization radiation, since it requires a small energy amount for releasing electrons. Since the photodiode does not amplify the corresponding photon current, it must be coupled to a low gain amplifier. Therefore, the new sensor works as a scintillator coupled with a photodiode PIN. Preliminary experiments are being performed with this sensor, showing good results for a wide range of energy spectrum. (author)

  12. New submillimeter detectors and antenna arrays

    International Nuclear Information System (INIS)

    Fetterman, H.R.; Reible, S.A.; Sollner, G.; Parker, C.D.

    1982-01-01

    Preliminary investigation has been made into the use of SIS (superconductor--insulator--superconductor) diodes for possible roles in sub-millimeter imaging systems. That is, extremely low noise, millimeter wave detectors and mixers have recently been reported which depend on single-particle tunnelling between two superconducting films separated by a thin oxide layer. The combination of excellent low-frequency sensitivity and well-developed fabrication technology make the SIS mixers particularly attractive for the systems using antenna structures and arrays in millimeter and submillimeter regions. The SIS diodes of Nb-Nb 2 O 5 -Pb showed a strong video response to the radiation which could be differentiated from the regular Josephson effect since it was not affected by a magnetic field. In exploring the three-terminal devices for possible detector and source applications in submillimeter region, the authors first determined that millimeter and submillimeter radiation could be effectively coupled to and detected in high-frequency FETs. Video response was readily obtained at 800 GHz, and carcinotron radiation at 350 GHz was mixed with the 5th harmonic of a 70 GHz klystron, producing over 45 db signal-to-noise ratio in the intermediate frequency. Since FET can function as a three-terminal oscillator simultaneously detecting submillimeter radiation or optical beats, it has interesting possibility, such as self-oscillating mixers or subharmonic local oscillators. (Wakatsuki, Y.)

  13. Solid state detector design

    International Nuclear Information System (INIS)

    Gunarwan Prayitno; Ahmad Rifai

    2010-01-01

    Much has been charged particle detector radiation detector made by the industry, especially those engaged in the development of detection equipment and components. The development and further research will be made solid state detector with silicon material. To be able to detect charged particles (radiation), required the processing of silicon material into the detector material. The method used to make silicon detector material is a lithium evaporations. Having formed an intrinsic region contactor installation process, and with testing. (author)

  14. Silicon for ultra-low-level detectors and sup 32 Si

    Energy Technology Data Exchange (ETDEWEB)

    Plaga, R. (Max Planck Inst. fuer Kernphysik, Heidelberg (Germany))

    1991-11-15

    A recent dark matter experiment using a silicon diode detector confirms that the decay of {sup 32}Si is a dangerous background in ultra-low-level experiments using silicon as detector material or shielding. In this Letter we study the mechanism of how {sup 32}Si enters commercially available silicon. Ways to avoid this contamination are pointed out. Limits on the {sup 32}Si content of silicon from measurements with miniaturized low-level proportional counters are also given. (orig.).

  15. Characterization of 3D-stc detectors fabricated at ITC-irst

    International Nuclear Information System (INIS)

    Boscardin, Maurizio; Bosisio, Luciano; Bruzzi, Mara; Dalla Betta, Gian-Franco; Piemonte, Claudio; Pozza, Alberto; Ronchin, Sabina; Tosi, Carlo; Zorzi, Nicola

    2007-01-01

    3D silicon radiation detectors offer many advantages over planar detectors, including improved radiation tolerance and faster charge collection time. We proposed a new 3D architecture (referred to as 3D-stc), which features columnar electrodes of one doping type only, thus, allowing a considerable simplification of the manufacturing process. In this paper, we report selected results from the electrical characterization of 3D diodes fabricated with this technology, along with preliminary results on the charge collection efficiency of these devices

  16. Recent Technological Developments on LGAD and iLGAD Detectors for Tracking and Timing Applications

    OpenAIRE

    Pellegrini, G.; Baselga, M.; Carulla, M.; Fadeyev, V.; Fernández-Martínez, P.; Fernandez-Garcia, M.; Flores, D.; Galloway, Z.; Gallrapp, C.; Hidalgo, S.; Liang, Z.; Merlos, A.; Moll, M.; Quirion, D.; Sadrozinski, H.

    2015-01-01

    This paper reports the last technological development on the Low Gain Avalanche Detector (LGAD) and introduces a new architecture of these detectors called inverse-LGAD (iLGAD). Both approaches are based on the standard Avalanche Photo Diodes (APD) concept, commonly used in optical and X-ray detection applications, including an internal multiplication of the charge generated by radiation. The multiplication is inherent to the basic n++-p+-p structure, where the doping profile of the p+ layer ...

  17. Dosimetric Verification Using 2D Planar Diode Arrays and 3D Cylindrical Diode Arrays in IMRT and VMAT

    International Nuclear Information System (INIS)

    Utitsarn, K.; Suriyapee, S.; Oonsiri, S.; Oonsiri, P.

    2012-01-01

    Introduction: Dosimetric verification of intensity modulated radiotherapy (IMRT) and volumetric modulated arc therapy (VMAT) before treatment is necessary due to the complexity of delivery beams. This work aims to evaluate the performance of 2D planar and 3D cylindrical diode arrays for patient specific QA in IMRT and VMAT. Methods: MapCHECK and ArcCHECK were studied for their properties before clinical use. The clinical performance was demonstrated with IMRT and VMAT plans, the measured results were compared with the calculation from Eclipse treatment planning. The gamma index of 3% /3mm with 10% threshold dose were the criteria of agreement between measured and calculated. Results: MapCHECK and ArcCHECK showed linearly dose response and demonstrated a short term and long term reproducibility within ± 0.2 and ± 2%, the repeatability rate effect was within ± 0.1 and ± 0.25 %, respectively. The dose rate response was within ± 1% for both detectors. The field size dependence was the same as ionization chamber response. The variation in energy response was within ± 4.5% for MapCHECK and ± 2% for ArcCHECK. The measured beam profile of open and 30° of hard and enhance dynamic wedge showed good agreement with calculated dose. Both detectors showed the excellent percentage passing for all 15 IMRT and VMAT plans. For IMRT, The average of the % pass of MapCHECK was 97.31 with the mean gamma of 0.45. The average number of detector was 344.80, while the average of the % pass of ArcCHECK was 97.21 with the mean gamma of 0.46. The average number of detector was 1049.31. For VMAT, The average of the % pass of MapCHECK was 98.55 with the mean gamma of 0.37. The average number of detector was 410, while the average of the % pass of ArcCHECK was 97.04 with the mean γ of 0.43. The average number of detector was 1054. Discussion: The more detectors of ArcCHECK than MapCHECK make more dose measurement points that increase the chance of dose difference. In addition, Map

  18. GERDA phase II detectors: Behind the production and characterisation at low background conditions

    Energy Technology Data Exchange (ETDEWEB)

    Maneschg, Werner [Max-Planck-Institut für Kernphysik, Saupfercheckweg 1, 69117 Heidelberg (Germany); Collaboration: GERDA Collaboration; and others

    2013-08-08

    The low background GERmanium Detector Array (GERDA) at Laboratori Nazionali del Gran Sasso (LNGS) is designed to search for the rare neutrinoless double beta decay (0νββ) in {sup 76}Ge. Bare germanium diodes are operated in liquid argon which is used as coolant, as passive and soon active as well shield against external radiation. Currently, Phase I of the experiment is running using ∼15 kg of co-axial High Purity Germanium diodes. In order to increase the sensitivity of the experiment 30 Broad Energy Germanium (BEGe) diodes will be added within 2013. This presentation reviews the production chain of the new BEGe detectors from isotopic enrichment to diode production and testing. As demonstrated all steps were carefully planned in order to minimize the exposure of the enriched germanium to cosmic radiation. Following this premise, acceptance and characterisation measurement of the newly produced diodes have been performed within the HEROICA project in the Belgian underground laboratory HADES close to the diode manufacturer. The test program and the results from a subset of the recently terminated GERDA Phase II BEGe survey will be presented.

  19. 3-D GaAs radiation detectors

    International Nuclear Information System (INIS)

    Meikle, A.R.; Bates, R.L.; Ledingham, K.; Marsh, J.H.; Mathieson, K.; O'Shea, V.; Smith, K.M.

    2002-01-01

    A novel type of GaAs radiation detector featuring a 3-D array of electrodes that penetrate through the detector bulk is described. The development of the technology to fabricate such a detector is presented along with electrical and radiation source tests. Simulations of the electrical characteristics are given for detectors of various dimensions. Laser drilling, wet chemical etching and metal evaporation were used to create a cell array of nine electrodes, each with a diameter of 60 μm and a pitch of 210 μm. Electrical measurements showed I-V characteristics with low leakage currents and high breakdown voltages. The forward and reverse I-V measurements showed asymmetrical characteristics, which are not seen in planar diodes. Spectra were obtained using alpha particle illumination. A charge collection efficiency of 50% and a S/N ratio of 3 : 1 were obtained. Simulations using the MEDICI software package were performed on cells with various dimensions and were comparable with experimental results. Simulations of a nine-electrode cell with 10 μm electrodes with a 25 μm pitch were also performed. The I-V characteristics again showed a high breakdown voltage with a low leakage current but also showed a full depletion voltage of just 8 V

  20. Large-aperture hybrid photo-detector

    International Nuclear Information System (INIS)

    Kawai, Y.; Nakayama, H.; Kusaka, A.; Kakuno, H.; Abe, T.; Iwasaki, M.; Aihara, H.; Tanaka, M.; Shiozawa, M.; Kyushima, H.; Suyama, M.

    2007-01-01

    We have developed the first complete large-aperture (13-inch diameter) hybrid photo-detector (HPD). The withstanding voltage problem has been overcome and we were able to attain an HPD operating voltage of +20 kV. Adoption of our newly developed backside illumination avalanche diode (AD) was also critical in successfully countering the additional problem of an increase in AD leakage after the activation process. We observed single photon signal timing jitter of under 450 ps in FWHM, electron transit time of ∼12 ns, and clear pulse height separation up to several photoelectron peaks, all greatly superior to the performance of any conventional large-aperture photomultiplier tubes (PMTs). In addition, our HPD has a much simpler structure than conventional large-aperture PMTs, which simplifies mass production and lowers manufacturing cost. We believe that these attributes position our HPD as the most suitable photo-detector for the next generation mega-ton class water-Cherenkov detector, which is expected to be more than 20x larger than the Super-Kamiokande (SK) detector

  1. Poster - 16: Time-resolved diode dosimetry for in vivo proton therapy range verification: calibration through numerical modeling

    Energy Technology Data Exchange (ETDEWEB)

    Toltz, Allison; Hoesl, Michaela; Schuemann, Jan; Seuntjens, Jan; Lu, Hsiao-Ming; Paganetti, Harald [McGill University, Harvard University, Massachusetts General Hospital, McGill University, Massachusetts General Hospital, Massachusetts General Hospital (United States)

    2016-08-15

    Purpose: A method to refine the implementation of an in vivo, adaptive proton therapy range verification methodology was investigated. Simulation experiments and in-phantom measurements were compared to validate the calibration procedure of a time-resolved diode dosimetry technique. Methods: A silicon diode array system has been developed and experimentally tested in phantom for passively scattered proton beam range verification by correlating properties of the detector signal to the water equivalent path length (WEPL). The implementation of this system requires a set of calibration measurements to establish a beam-specific diode response to WEPL fit for the selected ‘scout’ beam in a solid water phantom. This process is both tedious, as it necessitates a separate set of measurements for every ‘scout’ beam that may be appropriate to the clinical case, as well as inconvenient due to limited access to the clinical beamline. The diode response to WEPL relationship for a given ‘scout’ beam may be determined within a simulation environment, facilitating the applicability of this dosimetry technique. Measurements for three ‘scout’ beams were compared against simulated detector response with Monte Carlo methods using the Tool for Particle Simulation (TOPAS). Results: Detector response in water equivalent plastic was successfully validated against simulation for spread out Bragg peaks of range 10 cm, 15 cm, and 21 cm (168 MeV, 177 MeV, and 210 MeV) with adjusted R{sup 2} of 0.998. Conclusion: Feasibility has been shown for performing calibration of detector response for a given ‘scout’ beam through simulation for the time resolved diode dosimetry technique.

  2. Construction and performance of silicon detectors for the small angle spectrometers of the collider detector of Fermilab

    International Nuclear Information System (INIS)

    Apollinari, G.; Bedeschi, F.; Bellettini, G.; Bosi, F.; Bosisio, L.; Cervelli, F.; Del Fabbro, R.; Dell'Orso, M.; Di Virgilio, A.; Focardi, E.; Giannetti, P.; Giorgi, M.; Menzione, A.; Ristori, L.; Scribano, A.; Sestini, P.; Stefanini, A.; Tonelli, G.; Zetti, F.; Bertolucci, S.; Cordelli, M.; Curatolo, M.; Dulach, B.; Esposito, B.; Giromini, P.; Miscetti, S.; Sansoni, A.

    1987-01-01

    The manufacturing process of a series of position sensitive silicon detectors is described together with the tests performed to optimize the performance of the detectors. The detectors are Schottky diodes with strips on the ohmic contact which allow to determine the position of the incoming ionizing particles by charge partition. Four detectors were assembled in a telescope and tested inside the vacuum pipe of the Tevatron Collider at Fermilab. The system is a prototype of the Small Angle Silicon Spectrometer, designed primarily to study p-anti p elastic and diffractive cross sections, and is a part of the Collider Detector of Fermilab (CDF). Several tests were performed to check the efficiency and the linearity of response of various regions of the detectors. Scans of the beam halo were also done in high and low β optics to check how close to the beam the detectors could be operated. Finally, the dependence of the detector response on temperature and integrated radiation dose was investigated. (orig.)

  3. Compound Semiconductor Radiation Detector

    International Nuclear Information System (INIS)

    Kim, Y. K.; Park, S. H.; Lee, W. G.; Ha, J. H.

    2005-01-01

    In 1945, Van Heerden measured α, β and γ radiations with the cooled AgCl crystal. It was the first radiation measurement using the compound semiconductor detector. Since then the compound semiconductor has been extensively studied as radiation detector. Generally the radiation detector can be divided into the gas detector, the scintillator and the semiconductor detector. The semiconductor detector has good points comparing to other radiation detectors. Since the density of the semiconductor detector is higher than that of the gas detector, the semiconductor detector can be made with the compact size to measure the high energy radiation. In the scintillator, the radiation is measured with the two-step process. That is, the radiation is converted into the photons, which are changed into electrons by a photo-detector, inside the scintillator. However in the semiconductor radiation detector, the radiation is measured only with the one-step process. The electron-hole pairs are generated from the radiation interaction inside the semiconductor detector, and these electrons and charged ions are directly collected to get the signal. The energy resolution of the semiconductor detector is generally better than that of the scintillator. At present, the commonly used semiconductors as the radiation detector are Si and Ge. However, these semiconductor detectors have weak points. That is, one needs thick material to measure the high energy radiation because of the relatively low atomic number of the composite material. In Ge case, the dark current of the detector is large at room temperature because of the small band-gap energy. Recently the compound semiconductor detectors have been extensively studied to overcome these problems. In this paper, we will briefly summarize the recent research topics about the compound semiconductor detector. We will introduce the research activities of our group, too

  4. Destructive Single-Event Effects in Diodes

    Science.gov (United States)

    Casey, Megan C.; Lauenstein, Jean-Marie; Campola, Michael J.; Wilcox, Edward P.; Phan, Anthony M.; Label, Kenneth A.

    2017-01-01

    In this work, we discuss the observed single-event effects in a variety of types of diodes. In addition, we conduct failure analysis on several Schottky diodes that were heavy-ion irradiated. High- and low-magnitude optical microscope images, infrared camera images, and scanning electron microscope images are used to identify and describe the failure locations.

  5. outcome of diode laser cyclophotocoagulation in neovascular ...

    African Journals Online (AJOL)

    Duke

    including, ruby, ND:YAG, argon, krypton and, more recently, trans scleral cyclophotocoagulation with the diode laser, which has been shown to be more effective with less side effects than the others. The diode laser, 810nm, has. 4,5 greater melanin absorption compared to other lasers. Of the various cyclodestructive laser ...

  6. Graphene geometric diodes for terahertz rectennas

    International Nuclear Information System (INIS)

    Zhu Zixu; Joshi, Saumil; Grover, Sachit; Moddel, Garret

    2013-01-01

    We demonstrate a new thin-film graphene diode called a geometric diode that relies on geometric asymmetry to provide rectification at 28 THz. The geometric diode is coupled to an optical antenna to form a rectenna that rectifies incoming radiation. This is the first reported graphene-based antenna-coupled diode working at 28 THz, and potentially at optical frequencies. The planar structure of the geometric diode provides a low RC time constant, on the order of 10 −15 s, required for operation at optical frequencies, and a low impedance for efficient power transfer from the antenna. Fabricated geometric diodes show asymmetric current–voltage characteristics consistent with Monte Carlo simulations for the devices. Rectennas employing the geometric diode coupled to metal and graphene antennas rectify 10.6 µm radiation, corresponding to an operating frequency of 28 THz. The graphene bowtie antenna is the first demonstrated functional antenna made using graphene. Its response indicates that graphene is a suitable terahertz resonator material. Applications for this terahertz diode include terahertz-wave and optical detection, ultra-high-speed electronics and optical power conversion. (paper)

  7. Detectors and focal plane modules for weather satellites

    Science.gov (United States)

    D'Souza, A. I.; Robinson, E.; Masterjohn, S.; Ely, P.; Khalap, V.; Babu, S.; Smith, D. S.

    2016-05-01

    Weather satellite instruments require detectors with a variety of wavelengths ranging from the visible to VLWIR. One of the remote sensing applications is the geostationary GOES-ABI imager covering wavelengths from the 450 to 490 nm band through the 13.0 to 13.6 μm band. There are a total of 16 spectral bands covered. The Cross-track infrared Sounder (CrIS) is a Polar Orbiting interferometric sensor that measures earth radiances at high spectral resolution, using the data to provide pressure, temperature and moisture profiles of the atmosphere. The pressure, temperature and moisture sounding data are used in weather prediction models that track storms, predict levels of precipitation etc. The CrIS instrument contains SWIR (λc ~ 5 μm at 98K), MWIR (λc ~ 9 μm at 98K) and LWIRs (λc ~ 15.5 μm at 81K) bands in three Focal Plane Array Assemblies (FPAAs). GOES-ABI contains three focal plane modules (FPMs), (i) a visible-near infrared module consisting of three visible and three near infrared channels, (ii) a MWIR module comprised of five channels from 3.9 μm to 8.6 μm and (iii) a 9.6 μm to 13.3 μm, five-channel LWIR module. The VNIR FPM operates at 205 K, and the MWIR and LWIR FPMs operate at 60 K. Each spectral channel has a redundant array built into a single detector chip. Switching is thus permitted from the primary selected array in each channel to the redundant array, given any degradation in performance of the primary array during the course of the mission. Silicon p-i-n detectors are used for the 0.47 μm to 0.86 μm channels. The thirteen channels above 1 μm are fabricated in various compositions of Hg1-xCdxTe, and in this particular case using two different detector architectures. The 1.38 μm to 9.61 μm channels are all fabricated in Hg1-xCdxTe grown by Liquid Phase Epitaxy (LPE) using the HDVIP detector architecture. Molecular beam epitaxy (MBE)-grown Hg1-xCdxTe material are used for the LWIR 10.35 μm to 13.3 μm channels fabricated in Double

  8. Surface displacement imaging by interferometry with a light emitting diode

    International Nuclear Information System (INIS)

    Dilhaire, Stefan; Grauby, Stephane; Jorez, Sebastien; Lopez, Luis David Patino; Rampnoux, Jean-Michel; Claeys, Wilfrid

    2002-01-01

    We present an imaging technique to measure static surface displacements of electronic components. A device is supplied by a transient current that creates a variation of temperature, thus a surface displacement. To measure the latter, a setup that is based on a Michelson interferometer is used. To avoid the phenomenon of speckle and the drawbacks inherent to it, we use a light emitting diode as the light source for the interferometer. The detector is a visible CCD camera that analyzes the optical signal containing the information of surface displacement of the device. Combining images, we extract the amplitude of the surface displacement. Out-of-plane surface-displacement images of a thermoelectric device are presented

  9. Predicted radiation environment of the Saturn baseline diode

    International Nuclear Information System (INIS)

    Halbleib, J.A.; Lee, J.R.

    1987-09-01

    Coupled electron/photon Monte Carlo radiation transport was used to predict the radiation environment of the Saturn accelerator for the baseline diode design. The x-ray output has been calculated, as well as energy deposition in CaF 2 thermoluminescent dosimetry and silicon. It is found that the design criteria for the radiation environment will be met and that approximately 10 kJ of x rays will be available for simulation experiments, if the diode provides a nominal beam of 2.0-MeV electrons for 20 ns with a peak current of 12.5 MA. The penalty in dose and x-ray output for operating below the nominal energy in order to obtain a softer spectrum is quantified. The penalty for using excessive electron equilibration in the standard packaging of the thermoluminescent dosimeters is shown to be negligible. An intrinsic lack of electron equilibration for silicon elements of components and subsystems is verified for Saturn environments, demonstrating the ambiguity of design criteria based on silicon deposition. Validation of an efficient next-event-estimator method for predicting energy deposition in equilibrated detectors/dosimetry is confirmed. Finally, direct-electron depositions in excess of 1 kJ/g are shown to be easily achievable. 34 refs., 30 figs

  10. Spectroscopic amplifier for pin diode; Amplificador espectroscopico para diodo Pin

    Energy Technology Data Exchange (ETDEWEB)

    Alonso M, M. S.; Hernandez D, V. M.; Vega C, H. R., E-mail: bebe.luna_s@hotmail.com [Universidad Autonoma de Zacatecas, Unidad Academica de Estudios Nucleares, Cipres No. 10, Fracc. La Penuela, 98068 Zacatecas (Mexico)

    2014-10-15

    The photodiode remains the basic choice for the photo-detection and is widely used in optical communications, medical diagnostics and field of corpuscular radiation. In detecting radiation it has been used for monitoring radon and its progeny and inexpensive spectrometric systems. The development of a spectroscopic amplifier for Pin diode is presented which has the following characteristics: canceler Pole-Zero (P/Z) with a time constant of 8 μs; constant gain of 57, suitable for the acquisition system; 4th integrator Gaussian order to waveform change of exponential input to semi-Gaussian output and finally a stage of baseline restorer which prevents Dc signal contribution to the next stage. The operational amplifier used is the TLE2074 of BiFET technology of Texas Instruments with 10 MHz bandwidth, 25 V/μs of slew rate and a noise floor of 17 nv/(Hz)1/2. The integrated circuit has 4 operational amplifiers and in is contained the total of spectroscopic amplifier that is the goal of electronic design. The results show like the exponential input signal is converted to semi-Gaussian, modifying only the amplitude according to the specifications in the design. The total system is formed by the detector, which is the Pin diode, a sensitive preamplifier to the load, the spectroscopic amplifier that is what is presented and finally a pulse height analyzer (Mca) which is where the spectrum is shown. (Author)

  11. Electromagnetic wave analogue of an electronic diode

    International Nuclear Information System (INIS)

    Shadrivov, Ilya V; Powell, David A; Kivshar, Yuri S; Fedotov, Vassili A; Zheludev, Nikolay I

    2011-01-01

    An electronic diode is a nonlinear semiconductor circuit component that allows conduction of electrical current in one direction only. A component with similar functionality for electromagnetic waves, an electromagnetic isolator, is based on the Faraday effect of rotation of the polarization state and is also a key component in optical and microwave systems. Here we demonstrate a chiral electromagnetic diode, which is a direct analogue of an electronic diode: its functionality is underpinned by an extraordinarily strong nonlinear wave propagation effect in the same way as the electronic diode function is provided by the nonlinear current characteristic of a semiconductor junction. The effect exploited in this new electromagnetic diode is an intensity-dependent polarization change in an artificial chiral metamolecule. This microwave effect exceeds a similar optical effect previously observed in natural crystals by more than 12 orders of magnitude and a direction-dependent transmission that differs by a factor of 65.

  12. Laser diode package with enhanced cooling

    Science.gov (United States)

    Deri, Robert J [Pleasanton, CA; Kotovsky, Jack [Oakland, CA; Spadaccini, Christopher M [Oakland, CA

    2011-09-13

    A laser diode package assembly includes a reservoir filled with a fusible metal in close proximity to a laser diode. The fusible metal absorbs heat from the laser diode and undergoes a phase change from solid to liquid during the operation of the laser. The metal absorbs heat during the phase transition. Once the laser diode is turned off, the liquid metal cools off and resolidifies. The reservoir is designed such that that the liquid metal does not leave the reservoir even when in liquid state. The laser diode assembly further includes a lid with one or more fin structures that extend into the reservoir and are in contact with the metal in the reservoir.

  13. Carbon nanotube Schottky diode: an atomic perspective

    International Nuclear Information System (INIS)

    Bai, P; Li, E; Kurniawan, O; Koh, W S; Lam, K T

    2008-01-01

    The electron transport properties of semiconducting carbon nanotube (SCNT) Schottky diodes are investigated with atomic models using density functional theory and the non-equilibrium Green's function method. We model the SCNT Schottky diode as a SCNT embedded in the metal electrode, which resembles the experimental set-up. Our study reveals that the rectification behaviour of the diode is mainly due to the asymmetric electron transmission function distribution in the conduction and valence bands and can be improved by changing metal-SCNT contact geometries. The threshold voltage of the diode depends on the electron Schottky barrier height which can be tuned by altering the diameter of the SCNT. Contrary to the traditional perception, the metal-SCNT contact region exhibits better conductivity than the other parts of the diode

  14. Tunable diode-pumped-LNA laser

    International Nuclear Information System (INIS)

    Cassimi, A.; Hardy, V.; Hamel, J.; Leduc, M.

    1987-01-01

    Diode-pumped crystals provided recently new compact laser devices. We report the first end pumping of a La x Nd 1-x MgAl 11 O 19 (LNA) crystal using a 200mW diode array (Spectra Diode Lab). We also report the first results obtained with a 1mW diode (SONY). This C.W. laser can be tuned from 1.048μm to 1.086μm. Without selective elements in the cavity, the laser emits around 1.054μm with a threshold of 24mW and a slope efficiency of 4.4% (output mirror of transmission T = 1%) when pumped by the diode array. With the selective elements, the threshold increases to 100mW and we obtain a power of 4mW for a pump power of 200mW

  15. Radiation hazard detector

    International Nuclear Information System (INIS)

    Aslan, E.E.

    1986-01-01

    This patent describes an electric field sensitive probe comprising a set of sensing elements including a diode sensing element and a thermocouple sensing element. The diode sensing element is connected to a dipole and circuitry to exhibit a predetermined sensitivity to the field over a lower range of frequency, and the thermocouple sensing element exhibiting predetermined sensitivity to the field over a higher range of frequency. The lower and higher ranges are substantially adjacent to one another

  16. Comparison between rad-hard standard float zone (FZ) and magnetic Czochralski (MCZ) silicon diodes in radiotherapy electron beam dosimetry

    Energy Technology Data Exchange (ETDEWEB)

    Santos, T.C. dos; Goncalves, J.A.C.; Vasques, M.M.; Tobias, C.C.B. [Instituto de Pesquisas Energeticas e Nucleares (IPEN/CNEN-SP), Sao Paulo, SP (Brazil). Centro de Tecnologia das Radiacoes; Neves-Junior, W.F.P.; Haddad, C.M.K. [Hospital Sirio Libanes, Sao Paulo, SP (Brazil). Sociedade Beneficente de Senhoras; Harkonen, J. [Helsinki University of Technology (Denmark). Helsinki Inst. of Physics

    2010-07-01

    Full text. The use of semiconductor detectors has increased in radiotherapy practice since 1980s due to mainly their fast processing time, small sensitive volume and high relative sensitivity to ionizing radiation. Other major advantages of Si devices are excellent repeatability, good mechanical stability, high spatial resolution and the energy independence of mass collision stopping powers ratios (between silicon and water for electron beams with energy from 4 up to 20 MeV). However, ordinary silicon devices are very prone to radiation damage effects. In the last years, the development of radiation tolerant silicon detectors for High Energy Physics experiments has overcome this drawback. In this work we present the preliminary results obtained with a rad-hard epitaxial silicon diode as on-line clinical electron beam dosimeter. The diodes with 25 mm{sup 2} active area, were housed in a PMMA probe and connected, in a photovoltaic mode, to a Keithley 6517B electrometer. During all measurements, the diodes were held between PMMA plates, placed at Zref and centered in a radiation field of 10 cm x 10 cm, with the SSD kept at 100 cm. The devices dosimetric response was evaluated for 6, 9, 12, 15, 18 e 21 MeV electron beams from a Siemens KD 2 Radiotherapy Linear Accelerator, located at Sirio-Libanes Hospital. The radiation induced current in the diodes was registered as a function of the exposure time during 60 s for a fixed 300 MU. To study the short term repeatability, current signals were registered for the same radiation dose, for all energies. The dose-response of the diodes was achieved through the integration of the current signals as a function of the exposure time. The results obtained in the energy range of 6 up to 21 MeV evidenced that, for the same average dose rate of 5.0 cGy/s, the current signals are very stable and repeatable in both cases. For all energies, data shows good instantaneous repeatability with a percentage variation coefficient better than 2

  17. Evaluation and selection of optical feedback preamplifiers first cooled state for silicon-lithium detector

    International Nuclear Information System (INIS)

    Diaz Garcia, A.; Cabal Rodriguez, A.E.; Suarez Canner, E.

    1996-01-01

    The paper describes the principal characteristics of field-effect transistors and light-emitter diodes that allow to obtain a good energy resolution in Si Li detectors for X ray fluorescence manufactured at CEADEN. There exhibited transconductance values dl/dV and gate current for 16 researched field-effect transistor as well as the measurement circuits

  18. Stopping atoms with diode lasers

    International Nuclear Information System (INIS)

    Watts, R.N.; Wieman, C.E.

    1986-01-01

    The use of light pressure to cool and stop neutral atoms has been an area of considerable interest recently. Cooled neutral atoms are needed for a variety of interesting experiments involving neutral atom traps and ultrahigh-resolution spectroscopy. Laser cooling of sodium has previously been demonstrated using elegant but quite elaborate apparatus. These techniques employed stabilized dye lasers and a variety of additional sophisticated hardware. The authors have demonstrated that a frequency chirp technique can be implemented using inexpensive diode lasers and simple electronics. In this technique the atoms in an atomic beam scatter resonant photons from a counterpropagating laser beam. The momentum transfer from the photons slows the atoms. The primary difficulty is that as the atoms slow their Doppler shift changes, and so they are no longer in resonance with the incident photons. In the frequency chirp technique this is solved by rapidly changing the laser frequency so that the atoms remain in resonance. To achieve the necessary frequency sweep with a dye laser one must use an extremely sophisticated high-speed electrooptic modulator. With a diode laser, however, the frequency can be smoothly and rapidly varied over many gigahertz simply by changing the injection current

  19. Modelling of illuminated current–voltage characteristics to evaluate leakage currents in long wavelength infrared mercury cadmium telluride photovoltaic detectors

    International Nuclear Information System (INIS)

    Gopal, Vishnu; Qiu, WeiCheng; Hu, Weida

    2014-01-01

    The current–voltage characteristics of long wavelength mercury cadmium telluride infrared detectors have been studied using a recently suggested method for modelling of illuminated photovoltaic detectors. Diodes fabricated on in-house grown arsenic and vacancy doped epitaxial layers were evaluated for their leakage currents. The thermal diffusion, generation–recombination (g-r), and ohmic currents were found as principal components of diode current besides a component of photocurrent due to illumination. In addition, both types of diodes exhibited an excess current component whose growth with the applied bias voltage did not match the expected growth of trap-assisted-tunnelling current. Instead, it was found to be the best described by an exponential function of the type, I excess  = I r0  + K 1 exp (K 2 V), where I r0 , K 1 , and K 2 are fitting parameters and V is the applied bias voltage. A study of the temperature dependence of the diode current components and the excess current provided the useful clues about the source of origin of excess current. It was found that the excess current in diodes fabricated on arsenic doped epitaxial layers has its origin in the source of ohmic shunt currents. Whereas, the source of excess current in diodes fabricated on vacancy doped epitaxial layers appeared to be the avalanche multiplication of photocurrent. The difference in the behaviour of two types of diodes has been attributed to the difference in the quality of epitaxial layers

  20. Drift Chambers detectors; Detectores de deriva

    Energy Technology Data Exchange (ETDEWEB)

    Duran, I; Martinez laso, L

    1989-07-01

    We present here a review of High Energy Physics detectors based on drift chambers. The ionization, drift diffusion, multiplication and detection principles are described. Most common drift media are analysed, and a classification of the detectors according to its geometry is done. Finally the standard read-out methods are displayed and the limits of the spatial resolution are discussed. (Author) 115 refs.

  1. Memory effect in silicon time-gated single-photon avalanche diodes

    International Nuclear Information System (INIS)

    Dalla Mora, A.; Contini, D.; Di Sieno, L.; Tosi, A.; Boso, G.; Villa, F.; Pifferi, A.

    2015-01-01

    We present a comprehensive characterization of the memory effect arising in thin-junction silicon Single-Photon Avalanche Diodes (SPADs) when exposed to strong illumination. This partially unknown afterpulsing-like noise represents the main limiting factor when time-gated acquisitions are exploited to increase the measurement dynamic range of very fast (picosecond scale) and faint (single-photon) optical signals following a strong stray one. We report the dependences of this unwelcome signal-related noise on photon wavelength, detector temperature, and biasing conditions. Our results suggest that this so-called “memory effect” is generated in the deep regions of the detector, well below the depleted region, and its contribution on detector response is visible only when time-gated SPADs are exploited to reject a strong burst of photons

  2. Memory effect in silicon time-gated single-photon avalanche diodes

    Energy Technology Data Exchange (ETDEWEB)

    Dalla Mora, A.; Contini, D., E-mail: davide.contini@polimi.it; Di Sieno, L. [Dipartimento di Fisica, Politecnico di Milano, Piazza Leonardo da Vinci 32, I-20133 Milano (Italy); Tosi, A.; Boso, G.; Villa, F. [Dipartimento di Elettronica, Informazione e Bioingegneria, Politecnico di Milano, Piazza Leonardo da Vinci 32, I-20133 Milano (Italy); Pifferi, A. [Dipartimento di Fisica, Politecnico di Milano, Piazza Leonardo da Vinci 32, I-20133 Milano (Italy); CNR, Istituto di Fotonica e Nanotecnologie, Piazza Leonardo da Vinci 32, I-20133 Milano (Italy)

    2015-03-21

    We present a comprehensive characterization of the memory effect arising in thin-junction silicon Single-Photon Avalanche Diodes (SPADs) when exposed to strong illumination. This partially unknown afterpulsing-like noise represents the main limiting factor when time-gated acquisitions are exploited to increase the measurement dynamic range of very fast (picosecond scale) and faint (single-photon) optical signals following a strong stray one. We report the dependences of this unwelcome signal-related noise on photon wavelength, detector temperature, and biasing conditions. Our results suggest that this so-called “memory effect” is generated in the deep regions of the detector, well below the depleted region, and its contribution on detector response is visible only when time-gated SPADs are exploited to reject a strong burst of photons.

  3. Characterization and radiation studies of diode test structures in LFoundry CMOS technology

    Energy Technology Data Exchange (ETDEWEB)

    Daas, Michael; Gonella, Laura; Hemperek, Tomasz; Huegging, Fabian; Krueger, Hans; Pohl, David-Leon; Wermes, Norbert [Physikalisches Institut der Universitaet Bonn (Germany); Macchiolo, Anna [Max-Planck-Institut fuer Physik, Muenchen (Germany)

    2016-07-01

    In order to prepare for the High Luminosity upgrade of the LHC, all subdetector systems of the ATLAS experiment will be upgraded. In preparation for this process, different possibilities for new radiation-hard and cost-efficient silicon sensor technologies to be used as part of hybrid pixel detectors in the ATLAS inner tracker are being investigated. One promising way to optimize the cost-efficiency of silicon-based pixel detectors is to use commercially available CMOS technologies such as the 150 nm process by LFoundry. In this talk, several CMOS pixel test structures, such as simple diodes and small pixel arrays, that were manufactured in this technology are characterized regarding general performance and radiation hardness and compared to each other as well as to the current ATLAS pixel detector.

  4. CCE measurements and annealing studies on proton-irradiated p-type MCz silicon diodes

    CERN Document Server

    Hoedlmoser, H; Köhler, M; Nordlund, H

    2007-01-01

    Magnetic Czochralski (MCz) silicon has recently been investigated for the development of radiation tolerant detectors for future high-luminosity HEP experiments. A study of p-type MCz Silicon diodes irradiated with protons up to a fluence of has been performed by means of Charge Collection Efficiency (CCE) measurements as well as standard CV/IV characterizations. The changes of CCE, full depletion voltage and leakage current as a function of fluence are reported. A subsequent annealing study of the irradiated detectors shows an increase in effective doping concentration and a decrease in the leakage current, whereas the CCE remains basically unchanged. Two different series of detectors have been compared differing in the implantation dose of p-spray isolation as well as effective doping concentration (Neff) of the p-type bulk presumably due to a difference in thermal donor (TD) activation during processing. The series with the higher concentration of TDs shows a delayed reverse annealing of Neff after irradia...

  5. Electron Beam Induced Radiation Damage of the Semiconductor Radiation Detector based on Silicon

    International Nuclear Information System (INIS)

    Kim, Han Soo; Kim, Yong Kyun; Park, Se Hwan; Haa, Jang Ho; Kang, Sang Mook; Chung, Chong Eun; Cho, Seung Yeon; Park, Ji Hyun; Yoon, Tae Hyung

    2005-01-01

    A Silicon Surface Barrier (SSB) semiconductor detector which is generally used to detect a charged particle such as an alpha particle was developed. The performance of the developed SSB semiconductor detector was measured with an I-V curve and an alpha spectrum. The response for an alpha particle was measured by Pu-238 sources. A SSB semiconductor detector was irradiated firstly at 30sec, at 30μA and secondly 40sec, 40μA with a 2MeV pulsed electron beam generator in KAERI. And the electron beam induced radiation damage of a homemade SSB detector and the commercially available PIN photodiode were investigated. An annealing effect of the damaged SSB and PIN diode detector were also investigated using a Rapid Thermal Annealing (RTA). This data may assist in designing the silicon based semiconductor radiation detector when it is operated in a high radiation field such as space or a nuclear power plant

  6. Mica fission detectors

    International Nuclear Information System (INIS)

    Wong, C.; Anderson, J.D.; Hansen, L.; Lehn, A.V.; Williamson, M.A.

    1977-01-01

    The present development status of the mica fission detectors is summarized. It is concluded that the techniques have been refined and developed to a state such that the mica fission counters are a reliable and reproducible detector for fission events

  7. Barrier Infrared Detector (BIRD)

    Data.gov (United States)

    National Aeronautics and Space Administration — A recent breakthrough in MWIR detector design, has resulted in a high operating temperature (HOT) barrier infrared detector (BIRD) that is capable of spectral...

  8. Simulating detectors dead time

    International Nuclear Information System (INIS)

    Rustom, Ibrahim Farog Ibrahim

    2015-06-01

    Nuclear detectors are used in all aspects of nuclear measurements. All nuclear detectors are characterized by their dead time i.e. the time needed by a detector to recover from a previous incident. A detector dead time influences measurements taken by a detector and specially when measuring high decay rate (>) where is the detector dead time. Two models are usually used to correct for the dead time effect: the paralayzable and the non-paralayzable models. In the current work we use Monte Carlo simulation techniques to simulate radioactivity and the effect of dead time and the count rate of a detector with a dead time =5x10 - 5s assuming the non-paralayzable model. The simulation indicates that assuming a non -paralayzable model could be used to correct for decay rate measured by a detector. The reliability of the non-paralayzable model to correct the measured decay rate could be gauged using the Monte Carlo simulation. (Author)

  9. Forward tracking detectors

    Indian Academy of Sciences (India)

    Abstract. Forward tracking is an essential part of a detector at the international linear collider (ILC). The requirements for forward tracking are explained and the proposed solutions in the detector concepts are shown.

  10. Diode lasers: From laboratory to industry

    Science.gov (United States)

    Nasim, Hira; Jamil, Yasir

    2014-03-01

    The invention of first laser in 1960 triggered the discovery of several new families of lasers. A rich interplay of different lasing materials resulted in a far better understanding of the phenomena particularly linked with atomic and molecular spectroscopy. Diode lasers have gone through tremendous developments on the forefront of applied physics that have shown novel ways to the researchers. Some interesting attributes of the diode lasers like cost effectiveness, miniature size, high reliability and relative simplicity of use make them good candidates for utilization in various practical applications. Diode lasers are being used by a variety of professionals and in several spectroscopic techniques covering many areas of pure and applied sciences. Diode lasers have revolutionized many fields like optical communication industry, medical science, trace gas monitoring, studies related to biology, analytical chemistry including elemental analysis, war fare studies etc. In this paper the diode laser based technologies and measurement techniques ranging from laboratory research to automated field and industry have been reviewed. The application specific developments of diode lasers and various methods of their utilization particularly during the last decade are discussed comprehensively. A detailed snapshot of the current state of the art diode laser applications is given along with a detailed discussion on the upcoming challenges.

  11. A single-molecule diode

    Science.gov (United States)

    Elbing, Mark; Ochs, Rolf; Koentopp, Max; Fischer, Matthias; von Hänisch, Carsten; Weigend, Florian; Evers, Ferdinand; Weber, Heiko B.; Mayor, Marcel

    2005-06-01

    We have designed and synthesized a molecular rod that consists of two weakly coupled electronic π -systems with mutually shifted energy levels. The asymmetry thus implied manifests itself in a current-voltage characteristic with pronounced dependence on the sign of the bias voltage, which makes the molecule a prototype for a molecular diode. The individual molecules were immobilized by sulfur-gold bonds between both electrodes of a mechanically controlled break junction, and their electronic transport properties have been investigated. The results indeed show diode-like current-voltage characteristics. In contrast to that, control experiments with symmetric molecular rods consisting of two identical π -systems did not show significant asymmetries in the transport properties. To investigate the underlying transport mechanism, phenomenological arguments are combined with calculations based on density functional theory. The theoretical analysis suggests that the bias dependence of the polarizability of the molecule feeds back into the current leading to an asymmetric shape of the current-voltage characteristics, similar to the phenomena in a semiconductor diode. Author contributions: F.E., H.B.W., and M.M. designed research; M.E., R.O., M.K., M.F., F.E., H.B.W., and M.M. performed research; M.E., R.O., M.K., M.F., C.v.H., F.W., F.E., H.B.W., and M.M. contributed new reagents/analytic tools; M.E., R.O., M.K., C.v.H., F.E., H.B.W., and M.M. analyzed data; and F.E., H.B.W., and M.M. wrote the paper.This paper was submitted directly (Track II) to the PNAS office.Abbreviations: A, acceptor; D, donor; MCB, mechanically controlled break junction.Data deposition: The atomic coordinates have been deposited in the Cambridge Structural Database, Cambridge Crystallographic Data Centre, Cambridge CB2 1EZ, United Kingdom (CSD reference no. 241632).

  12. Study on dosimetric properties of radiophotoluminescent glass rod detector

    Energy Technology Data Exchange (ETDEWEB)

    Rah, Jeong Eun; Hong, Ju Young; Suh, Tea Suk [The Catholic University of Korea, Seoul (Korea, Republic of); Shin, Dong Oh [Kyunghee Univ., Seoul (Korea, Republic of); Kim, Hee Sun [Korea Hydro and Nuclear Power Co., Ltd, Daejeon (Korea, Republic of); Lim, Chun Il; Jeong, Hee Gyo [Korea Food and Drug Administration, Seoul (Korea, Republic of)

    2006-12-15

    A radiophotoluminescent Glass Rod Detector (GRD) system has recently become commercially available. We investigate the dosimetric properties of the GRD regarding the reproducibility of signal, dose linearity and energy dependence. The reproducibility of five measurements for 50 GRDs is presented by an average of one standard deviation of each GRD and it is {+-}1.2%. It is found to be linear in response to doses of {sup 60}Co beam in the range 0.5 to 50 Gy with a coefficient of linearity of 0.9998. The energy dependence of the GRD is determined by comparing the dose obtained using cylindrical chamber to that by using the GRD. The GRD response for each beam is normalized to the response for a {sup 60}Co beam. The responses for 6 and 15 MV x-ray beams are within {+-}1.5% (1SD). The energy response of GRD for high-energy photon is almost the same as the energy dependence of LiF:Mg:Ti (TLD-100) and shows little energy dependence unlike p-type silicon diode detector. The GRDs have advantages over other detectors such diode detector, and TLD: linearity, reproducibility and energy dependency. It has been verified to be an effective device for small field dosimetry for stereotactic radiosurgery.

  13. 4H-SiC Schottky diode arrays for X-ray detection

    Energy Technology Data Exchange (ETDEWEB)

    Lioliou, G. [Semiconductor Materials and Devices Laboratory, School of Engineering and Informatics, University of Sussex, Falmer, Brighton BN1 9QT (United Kingdom); Chan, H.K. [School of Electrical and Electronic Engineering, Newcastle University, Newcastle upon Tyne NE1 7RU (United Kingdom); Gohil, T. [Semiconductor Materials and Devices Laboratory, School of Engineering and Informatics, University of Sussex, Falmer, Brighton BN1 9QT (United Kingdom); Vassilevski, K.V.; Wright, N.G.; Horsfall, A.B. [School of Electrical and Electronic Engineering, Newcastle University, Newcastle upon Tyne NE1 7RU (United Kingdom); Barnett, A.M. [Semiconductor Materials and Devices Laboratory, School of Engineering and Informatics, University of Sussex, Falmer, Brighton BN1 9QT (United Kingdom)

    2016-12-21

    Five SiC Schottky photodiodes for X-ray detection have been electrically characterized at room temperature. One representative diode was also electrically characterized over the temperature range 20°C to 140 °C. The performance at 30 °C of all five X-ray detectors, in both current mode and for photon counting X-ray spectroscopy was investigated. The diodes were fabricated in an array form such that they could be operated as either a 2×2 or 1×3 pixel array. Although the devices showed double barrier heights, high ideality factors and higher than expected leakage current at room temperature (12 nA/cm{sup 2} at an internal electric field of 105 kV/cm), they operated as spectroscopic photon counting soft X-ray detectors uncooled at 30 °C. The measured energy resolution (FWHM at 17.4 keV, Mo Kα) varied from 1.36 to 1.68 keV among different diodes.

  14. Evaluation of 1024 channel VUV-photo-diodes for soft x-ray diagnostic applications

    International Nuclear Information System (INIS)

    Molvik, A.W.

    1997-01-01

    We tested the operation of 1024 channel diode arrays (Model AXUV-1024, from IRD, Inc.) in subdued room light to establish that they worked and to determine the direction and speed of the scan of the 1024 channels. Further tests were performed in vacuum in the HAP, High-Average-Power Facility. There we found that the bare or glass covered diodes detected primarily visible light as expected, but diodes filtered by aluminized parylene, produced a signal consistent with soft x-rays. It is probable that the spectral response and sensitivity, as discussed below, reproduce that previously demonstrated by 1 to 16 channel VUV-photodiodes; however, significantly more effort would be required to establish that experimentally. These detectors appear to be worth further evaluation where 25 w spatial resolution bolometers or spectrograph detectors of known sensitivity are required, and single-shot or 0.02-0.2s time response is adequate. (Presumably, faster readout would be available with custom drive circuitry.)

  15. Progress report on the use of hybrid silicon pin diode arrays in high energy physics

    International Nuclear Information System (INIS)

    Shapiro, S.L.; Jernigan, J.G.; Arens, J.F.

    1990-05-01

    We report on the successful effort to develop hybrid PIN diode arrays and to demonstrate their potential as components of vertex detectors. Hybrid pixel arrays have been fabricated by the Hughes Aircraft Co. by bump-bonding readout chips developed by Hughes to an array of PIN diodes manufactured by Micron Semiconductor Inc. These hybrid pixel arrays were constructed in two configurations. One array format has 10 x 64 pixels, each 120 μm square; and the other format has 256 x 156 pixels, each 30 μm square. In both cases, the thickness of the PIN diode layer is 300 μm. Measurements of detector performance show that excellent position resolution can be achieved by interpolation. By determining the centroid of the charge cloud which spreads charge into a number of neighboring pixels, a spatial resolution of a few microns has been attained. The noise has been measured to be about 300 electrons (rms) at room temperature, as expected from KTC and dark current considerations, yielding a signal-to-noise ratio of about 100 for minimum ionizing particles. 4 refs., 17 figs

  16. HIBP primary beam detector

    International Nuclear Information System (INIS)

    Schmidt, T.W.

    1979-01-01

    A position measuring detector was fabricated for the Heavy Ion Beam Probe. The 11 cm by 50 cm detector was a combination of 15 detector wires in one direction and 63 copper bars - .635 cm by 10 cm to measure along an orthogonal axis by means of a current divider circuit. High transmission tungsten meshes provide entrance windows and suppress secondary electrons. The detector dimensions were chosen to resolve the beam position to within one beam diameter

  17. The OSMOND detector

    Energy Technology Data Exchange (ETDEWEB)

    Bateman, J.E. [Technology Dept. Science and Technology Facilities Council, Rutherford Appleton Laboratory, Harwell Oxford, Oxfordshire, OX11 0QX (United Kingdom); Dalgliesh, R. [ISIS Dept. Science and Technology Facilities Council, Rutherford Appleton Laboratory, Harwell Oxford, Oxfordshire, OX11 0QX (United Kingdom); Duxbury, D.M., E-mail: dom.duxbury@stfc.ac.uk [Technology Dept. Science and Technology Facilities Council, Rutherford Appleton Laboratory, Harwell Oxford, Oxfordshire, OX11 0QX (United Kingdom); Helsby, W.I. [Science and Technology Facilities Council, Daresbury Laboratory, Keckwick Lane, Daresbury, Warrington WA4 4AD (United Kingdom); Holt, S.A.; Kinane, C.J. [ISIS Dept. Science and Technology Facilities Council, Rutherford Appleton Laboratory, Harwell Oxford, Oxfordshire, OX11 0QX (United Kingdom); Marsh, A.S. [Diamond Light Source LTD, Harwell Science and Innovation Campus, Diamond House, Chilton, Didcot, Oxfordshire, OX11 0DE (United Kingdom); Rhodes, N.J.; Schooneveld, E.M. [ISIS Dept. Science and Technology Facilities Council, Rutherford Appleton Laboratory, Harwell Oxford, Oxfordshire, OX11 0QX (United Kingdom); Spill, E.J.; Stephenson, R. [Technology Dept. Science and Technology Facilities Council, Rutherford Appleton Laboratory, Harwell Oxford, Oxfordshire, OX11 0QX (United Kingdom)

    2013-01-11

    The development and testing of the Off Specular MicrOstrip Neutron Detector (OSMOND) is described. Based on a microstrip gas chamber the aim of the project was to produce a high counting rate detector capable of replacing the existing rate limited scintillator detectors currently in use on the CRISP reflectometer for off specular reflectometry experiments. The detector system is described together with results of neutron beam tests carried out at the ISIS spallation neutron source.

  18. Coherence properties of spontaneous parametric down-conversion pumped by a multi-mode cw diode laser.

    Science.gov (United States)

    Kwon, Osung; Ra, Young-Sik; Kim, Yoon-Ho

    2009-07-20

    Coherence properties of the photon pair generated via spontaneous parametric down-conversion pumped by a multi-mode cw diode laser are studied with a Mach-Zehnder interferometer. Each photon of the pair enters a different input port of the interferometer and the biphoton coherence properties are studied with a two-photon detector placed at one output port. When the photon pair simultaneously enters the interferometer, periodic recurrence of the biphoton de Broglie wave packet is observed, closely resembling the coherence properties of the pump diode laser. With non-zero delays between the photons at the input ports, biphoton interference exhibits the same periodic recurrence but the wave packet shapes are shown to be dependent on both the input delay as well as the interferometer delay. These properties could be useful for building engineered entangled photon sources based on diode laser-pumped spontaneous parametric down-conversion.

  19. WORKSHOP: Scintillating fibre detectors

    International Nuclear Information System (INIS)

    Anon.

    1989-01-01

    Scintillating fibre detector development and technology for the proposed US Superconducting Supercollider, SSC, was the subject of a recent workshop at Fermilab, with participation from the high energy physics community and from industry. Sessions covered the current status of fibre technology and fibre detectors, new detector applications, fluorescent materials and scintillation compositions, radiation damage effects, amplification and imaging structures, and scintillation fibre fabrication techniques

  20. Shielded regenerative neutron detector

    International Nuclear Information System (INIS)

    Terhune, J.H.; Neissel, J.P.

    1978-01-01

    An ion chamber type neutron detector is disclosed which has a greatly extended lifespan. The detector includes a fission chamber containing a mixture of active and breeding material and a neutron shielding material. The breeding and shielding materials are selected to have similar or substantially matching neutron capture cross-sections so that their individual effects on increased detector life are mutually enhanced