Microbial interspecies electron transfer via electric currents through conductive minerals

Science.gov (United States)

Kato, Souichiro; Hashimoto, Kazuhito; Watanabe, Kazuya

2012-01-01

In anaerobic biota, reducing equivalents (electrons) are transferred between different species of microbes [interspecies electron transfer (IET)], establishing the basis of cooperative behaviors and community functions. IET mechanisms described so far are based on diffusion of redox chemical species and/or direct contact in cell aggregates. Here, we show another possibility that IET also occurs via electric currents through natural conductive minerals. Our investigation revealed that electrically conductive magnetite nanoparticles facilitated IET from Geobacter sulfurreducens to Thiobacillus denitrificans, accomplishing acetate oxidation coupled to nitrate reduction. This two-species cooperative catabolism also occurred, albeit one order of magnitude slower, in the presence of Fe ions that worked as diffusive redox species. Semiconductive and insulating iron-oxide nanoparticles did not accelerate the cooperative catabolism. Our results suggest that microbes use conductive mineral particles as conduits of electrons, resulting in efficient IET and cooperative catabolism. Furthermore, such natural mineral conduits are considered to provide ecological advantages for users, because their investments in IET can be reduced. Given that conductive minerals are ubiquitously and abundantly present in nature, electric interactions between microbes and conductive minerals may contribute greatly to the coupling of biogeochemical reactions. PMID:22665802

An experimental study of perovskite-structured mixed ionic- electronic conducting oxides and membranes

Science.gov (United States)

Zeng, Pingying

In recent decades, ceramic membranes based on mixed ionic and electronic conducting (MIEC) perovskite-structured oxides have received many attentions for their applications for air separation, or as a membrane reactor for methane oxidation. While numerous perovskite oxide materials have been explored over the past two decades; there are hardly any materials with sufficient practical economic value and performance for large scale applications, which justifies continuing the search for new materials. The main purposes of this thesis study are: (1) develop several novel SrCoO3-delta based MIEC oxides, SrCoCo1-xMxO3-delta, based on which membranes exhibit excellent oxygen permeability; (2) investigate the significant effects of the species and concentration of the dopants M (metal ions with fixed valences) on the various properties of these membranes; (3) investigate the significant effects of sintering temperature on the microstructures and performance of oxygen permeation membranes; and (4) study the performance of oxygen permeation membranes as a membrane reactor for methane combustion. To stabilize the cubic phase structure of the SrCoO3-delta oxide, various amounts of scandium was doped into the B-site of SrCoO 3-delta to form a series of new perovskite oxides, SrScxCoCo 1-xO3-delta (SSCx, x = 0-0.7). The significant effects of scandium-doping concentration on the phase structure, electrical conductivity, sintering performance, thermal and structural stability, cathode performance, and oxygen permeation performance of the SSCx membranes, were systematically studied. Also for a more in-depth understanding, the rate determination steps for the oxygen transport process through the membranes were clarified by theoretical and experimental investigation. It was found that only a minor amount of scandium (5 mol%) doping into the B-site of SrCoO3-delta can effectively stabilize the cubic phase structure, and thus significantly improve the electrical conductivity and

Synthesis of oxide-free aluminum nanoparticles for application to conductive film

Science.gov (United States)

Jong Lee, Yung; Lee, Changsoo; Lee, Hyuck Mo

2018-02-01

Aluminum nanoparticles are considered promising as alternatives to conventional ink materials, replacing silver and copper nanoparticles, due to their extremely low cost and low melting temperature. However, a serious obstacle to realizing their use as conductive ink materials is the oxidation of aluminum. In this research, we synthesized the oxide-free aluminum nanoparticles using catalytic decomposition and an oleic acid coating method, and these materials were applied to conductive ink for the first time. The injection time of oleic acid determines the size of the aluminum nanoparticles by forming a self-assembled monolayer on the nanoparticles instead of allowing the formation of an oxide phase. Fabricated nanoparticles were analyzed by transmission electron microscopy and x-ray photoelectron spectroscopy to verify their structural and chemical composition. In addition, conductive inks made of these nanoparticles exhibit electrical properties when they are sintered at over 300 °C in a reducing atmosphere. This result shows that aluminum nanoparticles can be used as an alternative conductive material in printed electronics and can solve the cost issues associated with noble metals.

Surface-conduction electron-emitter characteristics and fabrication based on vertically aligned carbon nanotube arrays

Energy Technology Data Exchange (ETDEWEB)

Shih, Yi-Ting [Graduate Institute of Electro-Optical Engineering, National Taiwan University of Science and Technology, No. 43, Section 4, Keelung Road, Taipei 10607, Taiwan (China); Li, Kuan-Wei [Department of Electronic and Computer Engineering, National Taiwan University of Science and Technology, No. 43, Section 4, Keelung Road, Taipei 10607, Taiwan (China); Honda, Shin-ichi [Graduate School of Engineering, University of Hyogo, 2167 Shosha, Himeji, Hyogo 671-2280 (Japan); Lin, Pao-Hung; Huang, Ying-Sheng [Graduate Institute of Electro-Optical Engineering, National Taiwan University of Science and Technology, No. 43, Section 4, Keelung Road, Taipei 10607, Taiwan (China); Department of Electronic and Computer Engineering, National Taiwan University of Science and Technology, No. 43, Section 4, Keelung Road, Taipei 10607, Taiwan (China); Lee, Kuei-Yi, E-mail: kylee@mail.ntust.edu.tw [Graduate Institute of Electro-Optical Engineering, National Taiwan University of Science and Technology, No. 43, Section 4, Keelung Road, Taipei 10607, Taiwan (China); Department of Electronic and Computer Engineering, National Taiwan University of Science and Technology, No. 43, Section 4, Keelung Road, Taipei 10607, Taiwan (China)

2017-06-01

Graphical abstract: The pattern design provides a new structure of surface-conduction electron-emitter display (SED). Delta-star shaped vertically aligned CNT (VACNT) arrays with 20o tips can simultaneously provide three emitters to bombard the sides of equilateral triangles pattern of VACNT, which produces numerous secondary electrons and enhance the SED efficiency. - Highlights: • The carbon nanotube (CNT) has replaced palladium oxide (PdO) as the electrode material for surface-conduction electron-emitter (SCE) applications. • The vertically aligned CNT (VACNT) arrays with 20° tips of the delta-star arrangement are used as cathodes that easily emit electrons. The cathode pattern simultaneously provides three emitters to bombard the sides of equilateral triangles pattern of VACNT. • The VACNT arrays were covered with magnesium oxide (MgO) nanostructures to promote the surface-conduction electron-emitter display (SED) efficiency (η). • The η was stably maintained in the 75–85% range. The proposed design provides a facile new method for developing SED applications. - Abstract: The carbon nanotube (CNT) has replaced palladium oxide (PdO) as the electrode material for surface-conduction electron-emitter (SCE) applications. Vertically aligned CNT arrays with a delta-star arrangement were patterned and synthesized onto a quartz substrate using photolithography and thermal chemical vapor deposition. Delta-star shaped VACNT arrays with 20° tips are used as cathodes that easily emit electrons because of their high electrical field gradient. In order to improve the field emission and secondary electrons (SEs) in SCE applications, magnesium oxide (MgO) nanostructures were coated onto the VACNT arrays to promote the surface-conduction electron-emitter display (SED) efficiency (η). According to the definition of η in SCE applications, in this study, the η was stably maintained in the 75–85% range. The proposed design provides a facile new method for

Studies on high electronic energy deposition in transparent conducting indium tin oxide thin films

Energy Technology Data Exchange (ETDEWEB)

Deshpande, N G [Thin Film and Nanotechnology Laboratory, Department of Physics, Dr Babasaheb Ambedkar Marathwada University, Aurangabad-431004 (MS) (India); Gudage, Y G [Thin Film and Nanotechnology Laboratory, Department of Physics, Dr Babasaheb Ambedkar Marathwada University, Aurangabad-431004 (MS) (India); Ghosh, A [Thin Film and Nanotechnology Laboratory, Department of Physics, Dr Babasaheb Ambedkar Marathwada University, Aurangabad-431004 (MS) (India); Vyas, J C [Technical and Prototype Engineering Division, Bhabha Atomic Research Center, Trombay, Mumbai (MS) (India); Singh, F [Inter-University Accelerator Center, Aruna Asaf Ali Marg, Post Box 10502, New Delhi 110067 (India); Tripathi, A [Inter-University Accelerator Center, Aruna Asaf Ali Marg, Post Box 10502, New Delhi 110067 (India); Sharma, Ramphal [Thin Film and Nanotechnology Laboratory, Department of Physics, Dr Babasaheb Ambedkar Marathwada University, Aurangabad-431004 (MS) (India)

2008-02-07

We have examined the effect of swift heavy ions using 100 MeV Au{sup 8+} ions on the electrical properties of transparent, conducting indium tin oxide polycrystalline films with resistivity of 0.58 x 10{sup -4} {omega} cm and optical transmission greater than 78% (pristine). We report on the modifications occurring after high electronic energy deposition. With the increase in fluency, x-ray line intensity of the peaks corresponding to the planes (1 1 0), (4 0 0), (4 4 1) increased, while (3 3 1) remained constant. Surface morphological studies showed a pomegranate structure of pristine samples, which was highly disturbed with a high dose of irradiation. For the high dose, there was a formation of small spherical domes uniformly distributed over the entire surface. The transmittance was seen to be decreasing with the increase in ion fluency. At higher doses, the resistivity and photoluminescence intensity was seen to be decreased. In addition, the carrier concentration was seen to be increased, which was in accordance with the decrease in resistivity. The observed modifications after high electronic energy deposition in these films may lead to fruitful device applications.

Studies on high electronic energy deposition in transparent conducting indium tin oxide thin films

International Nuclear Information System (INIS)

Deshpande, N G; Gudage, Y G; Ghosh, A; Vyas, J C; Singh, F; Tripathi, A; Sharma, Ramphal

2008-01-01

We have examined the effect of swift heavy ions using 100 MeV Au 8+ ions on the electrical properties of transparent, conducting indium tin oxide polycrystalline films with resistivity of 0.58 x 10 -4 Ω cm and optical transmission greater than 78% (pristine). We report on the modifications occurring after high electronic energy deposition. With the increase in fluency, x-ray line intensity of the peaks corresponding to the planes (1 1 0), (4 0 0), (4 4 1) increased, while (3 3 1) remained constant. Surface morphological studies showed a pomegranate structure of pristine samples, which was highly disturbed with a high dose of irradiation. For the high dose, there was a formation of small spherical domes uniformly distributed over the entire surface. The transmittance was seen to be decreasing with the increase in ion fluency. At higher doses, the resistivity and photoluminescence intensity was seen to be decreased. In addition, the carrier concentration was seen to be increased, which was in accordance with the decrease in resistivity. The observed modifications after high electronic energy deposition in these films may lead to fruitful device applications

Patterning of high mobility electron gases at complex oxide interfaces

DEFF Research Database (Denmark)

Trier, Felix; Prawiroatmodjo, G. E. D. K.; von Soosten, Merlin

2015-01-01

Oxide interfaces provide an opportunity for electronics. However, patterning of electron gases at complex oxide interfaces is challenging. In particular, patterning of complex oxides while preserving a high electron mobility remains underexplored and inhibits the study of quantum mechanical effects...... of amorphous-LSM (a-LSM) thin films, which acts as a hard mask during subsequent depositions. Strikingly, the patterned modulation-doped interface shows electron mobilities up to ∼8 700 cm2/V s at 2 K, which is among the highest reported values for patterned conducting complex oxide interfaces that usually...... where extended electron mean free paths are paramount. This letter presents an effective patterning strategy of both the amorphous-LaAlO3/SrTiO3 (a-LAO/STO) and modulation-doped amorphous-LaAlO3/La7/8Sr1/8MnO3/SrTiO3 (a-LAO/LSM/STO) oxide interfaces. Our patterning is based on selective wet etching...

Highly conducting and transparent sprayed indium tin oxide

Energy Technology Data Exchange (ETDEWEB)

Rami, M.; Benamar, E.; Messaoudi, C.; Sayah, D.; Ennaoui, A. (Faculte des Sciences, Rabat (Morocco). Lab. de Physique des Materiaux)

1998-03-01

Indium tin oxide (ITO) has a wide range of applications in solar cells (e.g. by controlling the resistivity, we can use low conductivity ITO as buffer layer and highly conducting ITO as front contact in thin films CuInS[sub 2] and CuInSe[sub 2] based solar cells) due to its wide band gap (sufficient to be transparent) in both visible and near infrared range, and high carrier concentrations with metallic conduction. A variety of deposition techniques such as reactive electron beam evaporation, DC magnetron sputtering, evaporation, reactive thermal deposition, and spray pyrolysis have been used for the preparation of undoped and tin doped indium oxide. This latter process which makes possible the preparation of large area coatings has attracted considerable attention due to its simplicity and large scale with low cost fabrication. It has been used here to deposit highly transparent and conducting films of tin doped indium oxide onto glass substrates. The electrical, optical and structural properties have been investigated as a function of various deposition parameters namely dopant concentrations, temperature and nature of substrates. X-ray diffraction patterns have shown that deposited films are polycrystalline without second phases and have preferred orientation [400]. INdium tin oxide layers with small resistivity value around 7.10[sup -5] [omega].cm and transmission coefficient in the visible and near IR range of about 85-90% have been easily obtained. (authors) 13 refs.

Relationship between electronic structure and electric conductivity of double rhodium oxides from X-ray spectral data

International Nuclear Information System (INIS)

Firsov, M.N.; Nefedov, V.I.; Shaplygin, I.S.

1983-01-01

Quantum yield spectra of X-ray photoemission of O K - and Rh M 3 -bands of double rhodium oxides with Be, Mg, Ca, Sr, Ba, Cd, V, Nb, Ta, Mo, W are obtained. Quantum yield spectra are analogous to absorption spectra and reflect vacant states in a crystal, in particular, the quantum yield spectrum of O K-band is associated with oxygen vacant states of p-symmetry while Rh M 3 -band spectrum with rhomium vacant states of d-symmetry. In all rhodium compounds investigated the first vacant band is formed by the rhodium 4d-states. The forbidden zone between the last occupied and first free states of rhodiUm has a small width (eV fractions), which explains the semiconductor character of electric conductivity of the investigated compounds. Electric resistance variation in investigated series of rhodium compounds is in agreement with peculiarities of their electronic structure and entirely depends on variation in the electron density on rhodium atoms

Graphene oxide overprints for flexible and transparent electronics

Energy Technology Data Exchange (ETDEWEB)

Rogala, M., E-mail: rogala@uni.lodz.pl; Wlasny, I.; Kowalczyk, P. J.; Busiakiewicz, A.; Kozlowski, W.; Klusek, Z. [Department of Solid State Physics, Faculty of Physics and Applied Informatics, University of Lodz, Pomorska 149/153, 90-236 Lodz (Poland); Dabrowski, P.; Lipinska, L.; Jagiello, J.; Aksienionek, M.; Strupinski, W.; Krajewska, A. [Institute of Electronic Materials Technology, Wolczynska 133, 01-919 Warsaw (Poland); Sieradzki, Z. [Electrotechnological Company QWERTY Ltd., Siewna 21, 94-250 Lodz (Poland); Krucinska, I.; Puchalski, M.; Skrzetuska, E. [Department of Material and Commodity Sciences and Textile Metrology, Lodz University of Technology, Zeromskiego 116, 90-924 Lodz (Poland)

2015-01-26

The overprints produced in inkjet technology with graphene oxide dispersion are presented. The graphene oxide ink is developed to be fully compatible with standard industrial printers and polyester substrates. Post-printing chemical reduction procedure is proposed, which leads to the restoration of electrical conductivity without destroying the substrate. The presented results show the outstanding potential of graphene oxide for rapid and cost efficient commercial implementation to production of flexible electronics. Properties of graphene-based electrodes are characterized on the macro- and nano-scale. The observed nano-scale inhomogeneity of overprints' conductivity is found to be essential in the field of future industrial applications.

Electronic properties of hafnium oxide: A contribution from defects and traps

Energy Technology Data Exchange (ETDEWEB)

Gritsenko, Vladimir A., E-mail: grits@isp.nsc.ru; Perevalov, Timofey V.; Islamov, Damir R., E-mail: damir@isp.nsc.ru

2016-02-15

In the present article, we give a review of modern data and latest achievements pertaining to the study of electronic properties of oxygen vacancies in hafnium oxide. Hafnium oxide is a key dielectric for use in many advanced silicon devices. Oxygen vacancies in hafnium oxide largely determine the electronic properties of the material. We show that the electronic transitions between the states due to oxygen vacancies largely determine the optical absorption and luminescent properties of hafnium oxide. We discuss the role of oxygen vacancies as traps that facilitate charge transport in hafnium oxide films. Also, we demonstrate the fact that the electrical conductivity in hafnium oxide is controlled by the phonon-assisted tunnelling of charge carriers between traps that were identified as oxygen vacancies.

Mechanisms for Electron Transfer Through Pili to Fe(III) Oxide in Geobacter

Energy Technology Data Exchange (ETDEWEB)

Lovley, Derek R. [Univ. of Massachusetts, Amherst, MA (United States)

2015-03-09

The purpose of these studies was to aid the Department of Energy in its goal of understanding how microorganisms involved in the bioremediation of metals and radionuclides sustain their activity in the subsurface. This information is required in order to incorporate biological processes into decision making for environmental remediation and long-term stewardship of contaminated sites. The proposed research was designed to elucidate the mechanisms for electron transfer to Fe(III) oxides in Geobacter species because Geobacter species are abundant dissimilatory metal-reducing microorganisms in a diversity of sites in which uranium is undergoing natural attenuation via the reduction of soluble U(VI) to insoluble U(IV) or when this process is artificially stimulated with the addition of organic electron donors. This study investigated the novel, but highly controversial, concept that the final conduit for electron transfer to Fe(III) oxides are electrically conductive pili. The specific objectives were to: 1) further evaluate the conductivity along the pili of Geobacter sulfurreducens and related organisms; 2) determine the mechanisms for pili conductivity; and 3) investigate the role of pili in Fe(III) oxide reduction. The studies demonstrated that the pili of G. sulfurreducens are conductive along their length. Surprisingly, the pili possess a metallic-like conductivity similar to that observed in synthetic organic conducting polymers such as polyaniline. Detailed physical analysis of the pili, as well as studies in which the structure of the pili was genetically modified, demonstrated that the metallic-like conductivity of the pili could be attributed to overlapping pi-pi orbitals of aromatic amino acids. Other potential mechanisms for conductivity, such as electron hopping between cytochromes associated with the pili were definitively ruled out. Pili were also found to be essential for Fe(III) oxide reduction in G. metallireducens. Ecological studies demonstrated

Conductivity study of nitrogen-doped calcium zinc oxide prepared by spray pyrolysis

International Nuclear Information System (INIS)

Hsu, Yu-Ting; Lan, Wen-How; Huang, Kai-Feng; Lin, Jia-Ching; Chang, Kuo-Jen

2016-01-01

In this study, the spray pyrolysis method was used to prepare unintentionally doped and nitrogen-doped calcium zinc oxide films by using zinc acetate, calcium nitrate precursor, and ammonium acetate precursor. Morphological and structural analyses were conducted using scanning electron microscopy and X-ray diffraction. The results indicated that film grain size decreased as the nitrogen doping was increased. Both calcium oxide and zinc oxide structures were identified in the unintentionally doped calcium zinc oxide. When nitrogen doping was introduced, the film mainly exhibited a zinc oxide structure with preferred (002) and (101) orientations. The concentration and mobility were investigated using a Hall measurement system. P-type films with a mobility and concentration of 10.6 cm"2 V"−"1 s"−"1 and 2.8×10"1"7 cm"−"3, respectively, were obtained. Moreover, according to a temperature-dependent conductivity analysis, an acceptor state with activation energy 0.266 eV dominated the p-type conduction for the unintentionally doped calcium zinc oxide. By contrast, a grain boundary with a barrier height of 0.274–0.292 eV dominated the hole conduction for the nitrogen-doped calcium zinc oxide films.

Transparent conductive zinc oxide basics and applications in thin film solar cells

CERN Document Server

Klein, Andreas; Rech, Bernd

2008-01-01

Zinc oxide (ZnO) belongs to the class of transparent conducting oxides which can be used as transparent electrodes in electronic devices or heated windows. In this book the material properties of, the deposition technologies for, and applications of zinc oxide in thin film solar cells are described in a comprehensive manner. Structural, morphological, optical and electronic properties of ZnO are treated in this review. The editors and authors of this book are specialists in deposition, analysis and fabrication of thin-film solar cells and especially of ZnO. This book is intended as an overview and a data collection for students, engineers and scientist.

The Preparation and Property of Graphene /Tin Oxide Transparent Conductive Film

Directory of Open Access Journals (Sweden)

SUN Tao

2017-02-01

Full Text Available Graphene doped tin oxide composites were prepared with SnCIZ·2HZ 0 and graphene oxide as raw materials with sol-gel method and then spincoated on the quartz glass to manufacture a new transparent conductive film. The composite film was characterized with X-ray diffraction(XRDand scanning electron microscopy(SEM analysis. XRD results show that the graphene oxide was successfully prepared with Hummers method. The graphene layers and particulate SnOZ can be clearly observed in SEM photos. The transmittance and conductivity of the thin films were tested with ultraviolet visible spectrophotometer and Hall effect measurement. The results show that the transmittivity of composite film in visible region is more than 90% and surface square resistance is 41 S2/口.The graphene/ SnOZ film exhibits a higher performance in transparence and conductivity than commercial FTO glass.

Electron Transfer between Electrically Conductive Minerals and Quinones

Directory of Open Access Journals (Sweden)

Olga Taran

2017-07-01

Full Text Available Long-distance electron transfer in marine environments couples physically separated redox half-reactions, impacting biogeochemical cycles of iron, sulfur and carbon. Bacterial bio-electrochemical systems that facilitate electron transfer via conductive filaments or across man-made electrodes are well-known, but the impact of abiotic currents across naturally occurring conductive and semiconductive minerals is poorly understood. In this paper I use cyclic voltammetry to explore electron transfer between electrodes made of common iron minerals (magnetite, hematite, pyrite, pyrrhotite, mackinawite, and greigite, and hydroquinones—a class of organic molecules found in carbon-rich sediments. Of all tested minerals, only pyrite and magnetite showed an increase in electric current in the presence of organic molecules, with pyrite showing excellent electrocatalytic performance. Pyrite electrodes performed better than commercially available glassy carbon electrodes and showed higher peak currents, lower overpotential values and a smaller separation between oxidation and reduction peaks for each tested quinone. Hydroquinone oxidation on pyrite surfaces was reversible, diffusion controlled, and stable over a large number of potential cycles. Given the ubiquity of both pyrite and quinones, abiotic electron transfer between minerals and organic molecules is likely widespread in Nature and may contribute to several different phenomena, including anaerobic respiration of a wide variety of microorganisms in temporally anoxic zones or in the proximity of hydrothermal vent chimneys, as well as quinone cycling and the propagation of anoxic zones in organic rich waters. Finally, interactions between pyrite and quinones make use of electrochemical gradients that have been suggested as an important source of energy for the origins of life on Earth. Ubiquinones and iron sulfide clusters are common redox cofactors found in electron transport chains across all domains

Electron Transfer Between Electrically Conductive Minerals and Quinones

Science.gov (United States)

Taran, Olga

2017-07-01

Long-distance electron transfer in marine environments couples physically separated redox half-reactions, impacting biogeochemical cycles of iron, sulfur and carbon. Bacterial bio-electrochemical systems that facilitate electron transfer via conductive filaments or across man-made electrodes are well known, but the impact of abiotic currents across naturally occurring conductive and semiconducitve minerals is poorly understood. In this paper I use cyclic voltammetry to explore electron transfer between electrodes made of common iron minerals (magnetite, hematite, pyrite, pyrrhotite, mackinawite and greigite), and hydroquinones - a class of organic molecules found in carbon-rich sediments. Of all tested minerals, only pyrite and magnetite showed an increase in electric current in the presence of organic molecules, with pyrite showing excellent electrocatalytic performance. Pyrite electrodes performed better than commercially available glassy carbon electrodes and showed higher peak currents, lower overpotential values and a smaller separation between oxidation and reduction peaks for each tested quinone. Hydroquinone oxidation on pyrite surfaces was reversible, diffusion controlled, and stable over a large number of potential cycles. Given the ubiquity of both pyrite and quinones, abiotic electron transfer between minerals and organic molecules is likely widespread in Nature and may contribute to several different phenomena, including anaerobic respiration of a wide variety of microorganisms in temporally anoxic zones or in the proximity of hydrothermal vent chimneys, as well as quinone cycling and the propagation of anoxic zones in organic rich waters. Finally, interactions between pyrite and quinones make use of electrochemical gradients that have been suggested as an important source of energy for the origins of life on Earth. Ubiquinones and iron sulfide clusters are common redox cofactors found in electron transport chains across all domains of life and

Transparent conducting oxide top contacts for organic electronics

KAUST Repository

Franklin, Joseph B.

2014-01-01

A versatile method for the deposition of transparent conducting oxide (TCO) layers directly onto conjugated polymer thin film substrates is presented. Using pulsed laser deposition (PLD) we identify a narrow window of growth conditions that permit the deposition of highly transparent, low sheet resistance aluminium-doped zinc oxide (AZO) without degradation of the polymer film. Deposition on conjugated polymers mandates the use of low growth temperatures (<200°C), here we deposit AZO onto poly-3-hexylthiophene (P3HT) thin films at 150°C, and investigate the microstructural and electrical properties of the AZO as the oxygen pressure in the PLD chamber is varied (5-75 mTorr). The low oxygen pressure conditions previously optimized for AZO deposition on rigid substrates are shown to be unsuitable, resulting in catastrophic damage of the polymer films. By increasing the oxygen pressure, thus reducing the energy of the ablated species, we identify conditions that allow direct deposition of continuous, transparent AZO films without P3HT degradation. We find that uptake of oxygen into the AZO films reduces the intrinsic charge carriers and AZO films with a measured sheet resistance of approximately 500 Ω □-1 can be prepared. To significantly reduce this value we identify a novel process in which AZO is deposited over a range of oxygen pressures-enabling the deposition of highly transparent AZO with sheet resistances below 50 Ω □-1 directly onto P3HT. We propose these low resistivity films are widely applicable as transparent top-contacts in a range of optoelectronic devices and highlight this by demonstrating the operation of a semi-transparent photovoltaic device. © 2014 The Royal Society of Chemistry. 2014.

Transparent conducting oxides and production thereof

Science.gov (United States)

Gessert, Timothy A.; Yoshida, Yuki; Coutts, Timothy J.

2014-06-10

Transparent conducting oxides and production thereof are disclosed. An exemplary method of producing a transparent conducting oxide (TCO) material may comprise: providing a TCO target doped with either a high-permittivity oxide or a low-permittivity oxide in a process chamber. The method may also comprise depositing a metal oxide on the target in the process chamber to form a thin film having enhanced optical properties without substantially decreasing electrical quality.

Electron small polarons and their mobility in iron (oxyhydr)oxide nanoparticles

DEFF Research Database (Denmark)

Katz, Jordan E; Zhang, Xiaoyi; Attenkofer, Klaus

2012-01-01

Electron mobility within iron (oxyhydr)oxides enables charge transfer between widely separated surface sites. There is increasing evidence that this internal conduction influences the rates of interfacial reactions and the outcomes of redox-driven phase transformations of environmental interest....... To determine the links between crystal structure and charge-transport efficiency, we used pump-probe spectroscopy to study the dynamics of electrons introduced into iron(III) (oxyhydr)oxide nanoparticles via ultrafast interfacial electron transfer. Using time-resolved x-ray spectroscopy and ab initio...

Amorphous semiconducting and conducting transparent metal oxide thin films and production thereof

Science.gov (United States)

Perkins, John; Van Hest, Marinus Franciscus Antonius Maria; Ginley, David; Taylor, Matthew; Neuman, George A.; Luten, Henry A.; Forgette, Jeffrey A.; Anderson, John S.

2010-07-13

Metal oxide thin films and production thereof are disclosed. An exemplary method of producing a metal oxide thin film may comprise introducing at least two metallic elements and oxygen into a process chamber to form a metal oxide. The method may also comprise depositing the metal oxide on a substrate in the process chamber. The method may also comprise simultaneously controlling a ratio of the at least two metallic elements and a stoichiometry of the oxygen during deposition. Exemplary amorphous metal oxide thin films produced according to the methods herein may exhibit highly transparent properties, highly conductive properties, and/or other opto-electronic properties.

Transparent Oxide Semiconductors for Emerging Electronics

KAUST Repository

Caraveo-Frescas, Jesus Alfonso

2013-11-01

Transparent oxide electronics have emerged as promising materials to shape the future of electronics. While several n-type oxides have been already studied and demonstrated feasibility to be used as active materials in thin film transistors, high performance p-type oxides have remained elusive. This dissertation is devoted to the study of transparent p-type oxide semiconductor tin monoxide and its use in the fabrication of field effect devices. A complete study on the deposition of tin monoxide thin films by direct current reactive magnetron sputtering is performed. Carrier density, carrier mobility and conductivity are studied over a set of deposition conditions where p-type conduction is observed. Density functional theory simulations are performed in order to elucidate the effect of native defects on carrier mobility. The findings on the electrical properties of SnO thin films are then translated to the fabrication of thin films transistors. The low processing temperature of tin monoxide thin films below 200 oC is shown advantageous for the fabrication of fully transparent and flexible thin film transistors. After careful device engineering, including post deposition annealing temperature, gate dielectric material, semiconductor thickness and source and drain electrodes material, thin film transistors with record device performance are demonstrated, achieving a field effect mobility >6.7 cm2V-1s-1. Device performance is further improved to reach a field effect mobility of 10.8 cm2V-1s-1 in SnO nanowire field effect transistors fabricated from the sputtered SnO thin films and patterned by electron beam lithography. Downscaling device dimension to nano scale is shown beneficial for SnO field effect devices not only by achieving a higher hole mobility but enhancing the overall device performance including better threshold voltage, subthreshold swing and lower number of interfacial defects. Use of p-type semiconductors in nonvolatile memory applications is then

Sputtered tin oxide and titanium oxide thin films as alternative transparent conductive oxides

Energy Technology Data Exchange (ETDEWEB)

Boltz, Janika

2011-12-12

Alternative transparent conductive oxides to tin doped indium oxide have been investigated. In this work, antimony doped tin oxide and niobium doped titanium oxide have been studied with the aim to prepare transparent and conductive films. Antimony doped tin oxide and niobium doped titanium oxide belong to different groups of oxides; tin oxide is a soft oxide, while titanium oxide is a hard oxide. Both oxides are isolating materials, in case the stoichiometry is SnO{sub 2} and TiO{sub 2}. In order to achieve transparent and conductive films free carriers have to be generated by oxygen vacancies, by metal ions at interstitial positions in the crystal lattice or by cation doping with Sb or Nb, respectively. Antimony doped tin oxide and niobium doped titanium oxide films have been prepared by reactive direct current magnetron sputtering (dc MS) from metallic targets. The process parameters and the doping concentration in the films have been varied. The films have been electrically, optically and structurally analysed in order to analyse the influence of the process parameters and the doping concentration on the film properties. Post-deposition treatments of the films have been performed in order to improve the film properties. For the deposition of transparent and conductive tin oxide, the dominant parameter during the deposition is the oxygen content in the sputtering gas. The Sb incorporation as doping atoms has a minor influence on the electrical, optical and structural properties. Within a narrow oxygen content in the sputtering gas highly transparent and conductive tin oxide films have been prepared. In this study, the lowest resistivity in the as deposited state is 2.9 m{omega} cm for undoped tin oxide without any postdeposition treatment. The minimum resistivity is related to a transition to crystalline films with the stoichiometry of SnO{sub 2}. At higher oxygen content the films turn out to have a higher resistivity due to an oxygen excess. After post

Quantum conductance of zigzag graphene oxide nanoribbons

International Nuclear Information System (INIS)

Kan, Zhe; Nelson, Christopher; Khatun, Mahfuza

2014-01-01

The electronic properties of zigzag graphene oxide nanoribbons (ZGOR) are presented. The results show interesting behaviors which are considerably different from the properties of the perfect graphene nanoribbons (GNRs). The theoretical methods include a Huckel-tight binding approach, a Green's function methodology, and the Landauer formalism. The presence of oxygen on the edge results in band bending, a noticeable change in density of states and thus the conductance. Consequently, the occupation in the valence bands increase for the next neighboring carbon atom in the unit cell. Conductance drops in both the conduction and valence band regions are due to the reduction of allowed k modes resulting from band bending. The asymmetry of the energy band structure of the ZGOR is due to the energy differences of the atoms. The inclusion of a foreign atom's orbital energies changes the dispersion relation of the eigenvalues in energy space. These novel characteristics are important and valuable in the study of quantum transport of GNRs

The Electronic Thermal Conductivity of Graphene.

Science.gov (United States)

Kim, Tae Yun; Park, Cheol-Hwan; Marzari, Nicola

2016-04-13

Graphene, as a semimetal with the largest known thermal conductivity, is an ideal system to study the interplay between electronic and lattice contributions to thermal transport. While the total electrical and thermal conductivity have been extensively investigated, a detailed first-principles study of its electronic thermal conductivity is still missing. Here, we first characterize the electron-phonon intrinsic contribution to the electronic thermal resistivity of graphene as a function of doping using electronic and phonon dispersions and electron-phonon couplings calculated from first-principles at the level of density-functional theory and many-body perturbation theory (GW). Then, we include extrinsic electron-impurity scattering using low-temperature experimental estimates. Under these conditions, we find that the in-plane electronic thermal conductivity κe of doped graphene is ∼300 W/mK at room temperature, independently of doping. This result is much larger than expected and comparable to the total thermal conductivity of typical metals, contributing ∼10% to the total thermal conductivity of bulk graphene. Notably, in samples whose physical or domain sizes are of the order of few micrometers or smaller, the relative contribution coming from the electronic thermal conductivity is more important than in the bulk limit, because lattice thermal conductivity is much more sensitive to sample or grain size at these scales. Last, when electron-impurity scattering effects are included we find that the electronic thermal conductivity is reduced by 30 to 70%. We also find that the Wiedemann-Franz law is broadly satisfied at low and high temperatures but with the largest deviations of 20-50% around room temperature.

Reversible solid oxide fuel cells (R-SOFCs) with chemically stable proton-conducting oxides

KAUST Repository

Bi, Lei

2015-07-01

Proton-conducting oxides offer a promising way of lowering the working temperature of solid oxide cells to the intermediate temperate range (500 to 700. °C) due to their better ionic conductivity. In addition, the application of proton-conducting oxides in both solid oxide fuel cells (SOFCs) and sold oxide electrolysis cells (SOECs) provides unique advantages compared with the use of conventional oxygen-ion conducting conductors, including the formation of water at the air electrode site. Since the discovery of proton conduction in some oxides about 30. years ago, the development of proton-conducting oxides in SOFCs and SOECs (the reverse mode of SOFCs) has gained increased attention. This paper briefly summarizes the development in the recent years of R-SOFCs with proton-conducting electrolytes, focusing on discussing the importance of adopting chemically stable materials in both fuel cell and electrolysis modes. The development of electrode materials for proton-conducting R-SOFCs is also discussed. © 2015 Elsevier B.V.

Electron uptake by iron-oxidizing phototrophic bacteria

Energy Technology Data Exchange (ETDEWEB)

Bose, A; Gardel, EJ; Vidoudez, C; Parra, EA; Girguis, PR

2014-02-26

Oxidation-reduction reactions underlie energy generation in nearly all life forms. Although most organisms use soluble oxidants and reductants, some microbes can access solid-phase materials as electron-acceptors or -donors via extracellular electron transfer. Many studies have focused on the reduction of solid-phase oxidants. Far less is known about electron uptake via microbial extracellular electron transfer, and almost nothing is known about the associated mechanisms. Here we show that the iron-oxidizing photoautotroph Rhodopseudomonas palustris TIE-1 accepts electrons from a poised electrode, with carbon dioxide as the sole carbon source/electron acceptor. Both electron uptake and ruBisCo form I expression are stimulated by light. Electron uptake also occurs in the dark, uncoupled from photosynthesis. Notably, the pioABC operon, which encodes a protein system essential for photoautotrophic growth by ferrous iron oxidation, influences electron uptake. These data reveal a previously unknown metabolic versatility of photoferrotrophs to use extracellular electron transfer for electron uptake.

Adaptive oxide electronics: A review

Science.gov (United States)

Ha, Sieu D.; Ramanathan, Shriram

2011-10-01

Novel information processing techniques are being actively explored to overcome fundamental limitations associated with CMOS scaling. A new paradigm of adaptive electronic devices is emerging that may reshape the frontiers of electronics and enable new modalities. Creating systems that can learn and adapt to various inputs has generally been a complex algorithm problem in information science, albeit with wide-ranging and powerful applications from medical diagnosis to control systems. Recent work in oxide electronics suggests that it may be plausible to implement such systems at the device level, thereby drastically increasing computational density and power efficiency and expanding the potential for electronics beyond Boolean computation. Intriguing possibilities of adaptive electronics include fabrication of devices that mimic human brain functionality: the strengthening and weakening of synapses emulated by electrically, magnetically, thermally, or optically tunable properties of materials.In this review, we detail materials and device physics studies on functional metal oxides that may be utilized for adaptive electronics. It has been shown that properties, such as resistivity, polarization, and magnetization, of many oxides can be modified electrically in a non-volatile manner, suggesting that these materials respond to electrical stimulus similarly as a neural synapse. We discuss what device characteristics will likely be relevant for integration into adaptive platforms and then survey a variety of oxides with respect to these properties, such as, but not limited to, TaOx, SrTiO3, and Bi4-xLaxTi3O12. The physical mechanisms in each case are detailed and analyzed within the framework of adaptive electronics. We then review theoretically formulated and current experimentally realized adaptive devices with functional oxides, such as self-programmable logic and neuromorphic circuits. Finally, we speculate on what advances in materials physics and engineering may

Electron thermal conduction in LASNEX

International Nuclear Information System (INIS)

Munro, D.; Weber, S.

1994-01-01

This report is a transcription of hand-written notes by DM dated 29 January 1986, transcribed by SW, with some clarifying comments added and details specific to running the LASNEX code deleted. Reference to the esoteric measurement units employed in LASNEX has also been deleted by SW (hopefully, without introducing errors in the numerical constants). The report describes the physics equations only, and only of electron conduction. That is, it does not describe the numerical method, which may be finite difference or finite element treatment in space, and (usually) implicit treatment in time. It does not touch on other electron transport packages which are available, and which include suprathermal electrons, nonlocal conduction, Krook model conduction, and modifications to electron conduction by magnetic fields. Nevertheless, this model is employed for the preponderance of LASNEX simulations

Control of Electronic Conduction at an Oxide Heterointerface using Surface Polar Adsorbates

Energy Technology Data Exchange (ETDEWEB)

Bell, Christopher

2011-08-19

We study the effect of the surface adsorption of a variety of common laboratory solvents on the conductivity at the interface between LaAlO{sub 3} and SrTiO{sub 3}. This interface possesses a range of intriguing physics, notably a proposed connection between the surface state of the LaAlO{sub 3} and the conductivity buried in the SrTiO{sub 3}. We show that the application of chemicals such as acetone, ethanol, and water can induce a large change (factor of three) in the conductivity. This phenomenon is observed only for polar solvents. These data provide experimental evidence for a general polarization-facilitated electronic transfer mechanism.

Electrical Properties of Conductive Cotton Yarn Coated with Eosin Y Functionalized Reduced Graphene Oxide.

Science.gov (United States)

Kim, Eunju; Arul, Narayanasamy Sabari; Han, Jeong In

2016-06-01

This study reports the fabrication and investigation of the electrical properties of two types of conductive cotton yarns coated with eosin Y or eosin B functionalized reduced graphene (RGO) and bare graphene oxide (GO) using dip-coating method. The surface morphology of the conductive cotton yarn coated with reduced graphene oxide was observed by Scanning Electron Microscope (SEM). Due to the strong electrostatic attractive forces, the negatively charged surface such as the eosin Y functionalized reduced graphene oxide or bare GO can be easily coated to the positively charged polyethyleneimine (PEI) treated cotton yarn. The maximum current for the conductive cotton yarn coated with eosin Y functionalized RGO and bare GO with 20 cycles repetition of (5D + R) process was found to be 793.8 μA and 3482.8 μA. Our results showed that the electrical conductivity of bare GO coated conductive cotton yarn increased by approximately four orders of magnitude with the increase in the dipping cycle of (5D+R) process.

The 2016 oxide electronic materials and oxide interfaces roadmap

DEFF Research Database (Denmark)

Lorenz, M.; Rao, M. S. Ramachandra; Venkatesan, T.

2016-01-01

of these materials to understand the tunability of their properties and the novel properties that evolve due to their nanostructured nature is another facet of the challenge. The research related to the oxide electronic field is at an impressionable stage, and this has motivated us to contribute with a roadmap......, Pentcheva, and Gegenwart. Finally, Miletto Granozio presents the European action ‘towards oxide-based electronics’ which develops an oxide electronics roadmap with emphasis on future nonvolatile memories and the required technologies.In summary, we do hope that this oxide roadmap appears as an interesting...

Enhancing the Electronic Conductivity of Vanadium-tellurite Glasses by Tuning the Redox State

DEFF Research Database (Denmark)

Kjeldsen, Jonas; Yue, Yuanzheng

Transition metal oxides are used in a variety of electronic purposes, e.g., vanadium tellurite as cathode material in high-power demanding batteries. By tuning the redox state of vanadium, it is possible to achieve a lower internal resistance within the entire battery unit, thus a higher capacity....... In this work we vary the redox state of a given vanadium tellurite system by performing post heat-treatment in controlled atmosphere. This process is in theory not limited only to varying electronic conductivity, but also varying the glass structure, and hence, changing properties of the glasses, e.g, thermal...... and mechanical properties. Finally we give insight into the relation between the redox state and electronic conductivity....

Microfabrication of passive electronic components with printed graphene-oxide deposition

Science.gov (United States)

Sinar, Dogan; Knopf, George K.; Nikumb, Suwas

2014-03-01

Flexible electronic circuitry is an emerging technology that will significantly impact the future of healthcare and medicine, food safety inspection, environmental monitoring, and public security. Recent advances in drop-on-demand printing technology and electrically conductive inks have enabled simple electronic circuits to be fabricated on mechanically flexible polymers, paper, and bioresorbable silk. Research has shown that graphene, and its derivative formulations, can be used to create low-cost electrically conductive inks. Graphene is a one atom thick two-dimensional layer composed of carbon atoms arranged in a hexagonal lattice forming a material with very high fracture strength, high Young's Modulus, and low electrical resistance. Non-conductive graphene-oxide (GO) inks can also be synthesized from inexpensive graphite powders. Once deposited on the flexible substrate the electrical conductivity of the printed GO microcircuit traces can be restored through thermal reduction. In this paper, a femtosecond laser with a wavelength of 775nm and pulse width of 120fs is used to transform the non-conductive printed GO film into electrically conductive oxygen reduced graphene-oxide (rGO) passive electronic components by the process of laser assisted thermal reduction. The heat affected zone produced during the process was minimized because of the femtosecond pulsed laser. The degree of conductivity exhibited by the microstructure is directly related to the laser power level and exposure time. Although rGO films have higher resistances than pristine graphene, the ability to inkjet print capacitive elements and modify local resistive properties provides for a new method of fabricating sensor microcircuits on a variety of substrate surfaces.

Composite electrolyte with proton conductivity for low-temperature solid oxide fuel cell

Energy Technology Data Exchange (ETDEWEB)

Raza, Rizwan, E-mail: razahussaini786@gmail.com [Department of Physics, COMSATS Institute of Information Technology, Lahore 54000 (Pakistan); Department of Energy Technology, Royal Institute of Technology, KTH, Stockholm 10044 (Sweden); Ahmed, Akhlaq; Akram, Nadeem; Saleem, Muhammad; Niaz Akhtar, Majid; Ajmal Khan, M.; Abbas, Ghazanfar; Alvi, Farah; Yasir Rafique, M. [Department of Physics, COMSATS Institute of Information Technology, Lahore 54000 (Pakistan); Sherazi, Tauqir A. [Department of Chemistry, COMSATS Institute of Information Technology, Abbotabad 22060 (Pakistan); Shakir, Imran [Sustainable Energy Technologies (SET) center, College of Engineering, King Saud University, PO-BOX 800, Riyadh 11421 (Saudi Arabia); Mohsin, Munazza [Department of Physics, Lahore College for Women University, Lahore, 54000 (Pakistan); Javed, Muhammad Sufyan [Department of Physics, COMSATS Institute of Information Technology, Lahore 54000 (Pakistan); Department of Applied Physics, Chongqing University, Chongqing 400044 (China); Zhu, Bin, E-mail: binzhu@kth.se, E-mail: zhubin@hubu.edu.cn [Department of Energy Technology, Royal Institute of Technology, KTH, Stockholm 10044 (Sweden); Hubei Collaborative Innovation Center for Advanced Organic Chemical Materials, Faculty of Physics and Electronic Science/Faculty of Computer and Information, Hubei University, Wuhan, Hubei 430062 (China)

2015-11-02

In the present work, cost-effective nanocomposite electrolyte (Ba-SDC) oxide is developed for efficient low-temperature solid oxide fuel cells (LTSOFCs). Analysis has shown that dual phase conduction of O{sup −2} (oxygen ions) and H{sup +} (protons) plays a significant role in the development of advanced LTSOFCs. Comparatively high proton ion conductivity (0.19 s/cm) for LTSOFCs was achieved at low temperature (460 °C). In this article, the ionic conduction behaviour of LTSOFCs is explained by carrying out electrochemical impedance spectroscopy measurements. Further, the phase and structure analysis are investigated by X-ray diffraction and scanning electron microscopy techniques. Finally, we achieved an ionic transport number of the composite electrolyte for LTSOFCs as high as 0.95 and energy and power density of 90% and 550 mW/cm{sup 2}, respectively, after sintering the composite electrolyte at 800 °C for 4 h, which is promising. Our current effort toward the development of an efficient, green, low-temperature solid oxide fuel cell with the incorporation of high proton conductivity composite electrolyte may open frontiers in the fields of energy and fuel cell technology.

Composite electrolyte with proton conductivity for low-temperature solid oxide fuel cell

Science.gov (United States)

Raza, Rizwan; Ahmed, Akhlaq; Akram, Nadeem; Saleem, Muhammad; Niaz Akhtar, Majid; Sherazi, Tauqir A.; Ajmal Khan, M.; Abbas, Ghazanfar; Shakir, Imran; Mohsin, Munazza; Alvi, Farah; Javed, Muhammad Sufyan; Yasir Rafique, M.; Zhu, Bin

2015-11-01

In the present work, cost-effective nanocomposite electrolyte (Ba-SDC) oxide is developed for efficient low-temperature solid oxide fuel cells (LTSOFCs). Analysis has shown that dual phase conduction of O-2 (oxygen ions) and H+ (protons) plays a significant role in the development of advanced LTSOFCs. Comparatively high proton ion conductivity (0.19 s/cm) for LTSOFCs was achieved at low temperature (460 °C). In this article, the ionic conduction behaviour of LTSOFCs is explained by carrying out electrochemical impedance spectroscopy measurements. Further, the phase and structure analysis are investigated by X-ray diffraction and scanning electron microscopy techniques. Finally, we achieved an ionic transport number of the composite electrolyte for LTSOFCs as high as 0.95 and energy and power density of 90% and 550 mW/cm2, respectively, after sintering the composite electrolyte at 800 °C for 4 h, which is promising. Our current effort toward the development of an efficient, green, low-temperature solid oxide fuel cell with the incorporation of high proton conductivity composite electrolyte may open frontiers in the fields of energy and fuel cell technology.

Optical properties and electronic transitions of zinc oxide, ferric oxide, cerium oxide, and samarium oxide in the ultraviolet and extreme ultraviolet

DEFF Research Database (Denmark)

Pauly, N; Yubero, F; Espinós, J P

2017-01-01

Optical properties and electronic transitions of four oxides, namely zinc oxide, ferric oxide, cerium oxide, and samarium oxide, are determined in the ultraviolet and extreme ultraviolet by reflection electron energy loss spectroscopy using primary electron energies in the range 0.3-2.0 ke...

Pulsed laser deposition of transparent conductive oxide thin films on flexible substrates

Science.gov (United States)

Socol, G.; Socol, M.; Stefan, N.; Axente, E.; Popescu-Pelin, G.; Craciun, D.; Duta, L.; Mihailescu, C. N.; Mihailescu, I. N.; Stanculescu, A.; Visan, D.; Sava, V.; Galca, A. C.; Luculescu, C. R.; Craciun, V.

2012-11-01

The influence of target-substrate distance during pulsed laser deposition of indium zinc oxide (IZO), indium tin oxide (ITO) and aluminium-doped zinc oxide (AZO) thin films grown on polyethylene terephthalate (PET) substrates was investigated. It was found that the properties of such flexible transparent conductive oxide (TCO)/PET electrodes critically depend on this parameter. The TCO films that were deposited at distances of 6 and 8 cm exhibited an optical transmittance higher than 90% in the visible range and electrical resistivities around 5 × 10-4 Ω cm. In addition to these excellent electrical and optical characteristics the films grown at 8 cm distance were homogenous, smooth, adherent, and without cracks or any other extended defects, being suitable for opto-electronic device applications.

Highly Conductive One-Dimensional Manganese Oxide Wires by Coating with Graphene Oxides

Science.gov (United States)

Tojo, Tomohiro; Shinohara, Masaki; Fujisawa, Kazunori; Muramatsu, Hiroyuki; Hayashi, Takuya; Ahm Kim, Yoong; Endo, Morinobu

2012-10-01

Through coating with graphene oxides, we have developed a chemical route to the bulk production of long, thin manganese oxide (MnO2) nanowires that have high electrical conductivity. The average diameter of these hybrid nanowires is about 25 nm, and their average length is about 800 nm. The high electrical conductivity of these nanowires (ca. 189.51+/-4.51 µS) is ascribed to the homogeneous coating with conductive graphene oxides as well as the presence of non-bonding manganese atoms. The growth mechanism of the nanowires is theoretically supported by the initiation of morphological conversion from graphene oxide to wrapped structures through the formation of covalent bonds between manganese and oxygen atoms at the graphene oxide edge.

High adhesion transparent conducting films using graphene oxide hybrid carbon nanotubes

International Nuclear Information System (INIS)

Da, Shi-Xun; Wang, Jie; Geng, Hong-Zhang; Jia, Song-Lin; Xu, Chun-Xia; Li, Lin-Ge; Shi, Pei-Pei; Li, Guangfen

2017-01-01

Graphical abstract: The GO hybrid CNTs to fabricate TCFs could dramatically enhance the conductivity, adhesion, flatness, and wettability of the films, all these improvements are advantageous for optoelectronic applications. - Highlights: • TCFs were fabricated using GO/CNT hybrid inks by a simple spray method. • Conductivity of TCFs was improved through the hybrid of GO/CNT, sheet resistance of TCFs was 146 Ω/sq at the transmittance of 86.0% when the ratio of GO/CNT got 1.5:1.0. • The flatness and wettability of TCFs were improved dramatically, which is advantageous for the solution-based processing of organic electronics for spraying and printing. • The adhesion of the TCFs increased dramatically with the raise of the ratio GO/CNT hybrid. - Abstract: Flexible transparent conducting films (TCFs) with carbon nanotubes (CNTs) have attracted more and more attention for their wide range of potential applications. While, there are still some problems to be solved on several aspects. In this study, a graphene oxide/carbon nanotube (GO/CNT) hybrid TCF was fabricated through the simple spray coating method. GO sheets were introduced to form new electron transporting channels. It was found that the best optoelectronic property films were fabricated when the ratio of GO/CNT is 1.5:1.0, which the sheet resistance of the film was found to be 146 Ω/sq at the transmittance of 86.0%. Due to the two-dimensional structure and the oxidation groups of GO sheets, flatness and wettability of the electrode surface was improved obviously. Adhesion factor of the TCFs was calculated by the change of transparent and sheet resistance after trial test, the addition of GO sheets enhanced the adhesion dramatically and the mechanism was analyzed. Improvements of conductivity, flatness, wettability and adhesion above are all advantageous for the solution-based processing of organic electronics for spraying and printing.

High adhesion transparent conducting films using graphene oxide hybrid carbon nanotubes

Energy Technology Data Exchange (ETDEWEB)

Da, Shi-Xun; Wang, Jie; Geng, Hong-Zhang, E-mail: genghz@tjpu.edu.cn; Jia, Song-Lin; Xu, Chun-Xia; Li, Lin-Ge; Shi, Pei-Pei; Li, Guangfen

2017-01-15

Graphical abstract: The GO hybrid CNTs to fabricate TCFs could dramatically enhance the conductivity, adhesion, flatness, and wettability of the films, all these improvements are advantageous for optoelectronic applications. - Highlights: • TCFs were fabricated using GO/CNT hybrid inks by a simple spray method. • Conductivity of TCFs was improved through the hybrid of GO/CNT, sheet resistance of TCFs was 146 Ω/sq at the transmittance of 86.0% when the ratio of GO/CNT got 1.5:1.0. • The flatness and wettability of TCFs were improved dramatically, which is advantageous for the solution-based processing of organic electronics for spraying and printing. • The adhesion of the TCFs increased dramatically with the raise of the ratio GO/CNT hybrid. - Abstract: Flexible transparent conducting films (TCFs) with carbon nanotubes (CNTs) have attracted more and more attention for their wide range of potential applications. While, there are still some problems to be solved on several aspects. In this study, a graphene oxide/carbon nanotube (GO/CNT) hybrid TCF was fabricated through the simple spray coating method. GO sheets were introduced to form new electron transporting channels. It was found that the best optoelectronic property films were fabricated when the ratio of GO/CNT is 1.5:1.0, which the sheet resistance of the film was found to be 146 Ω/sq at the transmittance of 86.0%. Due to the two-dimensional structure and the oxidation groups of GO sheets, flatness and wettability of the electrode surface was improved obviously. Adhesion factor of the TCFs was calculated by the change of transparent and sheet resistance after trial test, the addition of GO sheets enhanced the adhesion dramatically and the mechanism was analyzed. Improvements of conductivity, flatness, wettability and adhesion above are all advantageous for the solution-based processing of organic electronics for spraying and printing.

Transparent Oxide Semiconductors for Emerging Electronics

KAUST Repository

Caraveo-Frescas, Jesus Alfonso

2013-01-01

Transparent oxide electronics have emerged as promising materials to shape the future of electronics. While several n-type oxides have been already studied and demonstrated feasibility to be used as active materials in thin film transistors, high

Electronic Conductivity of Doped-Lanthanum Gallate Electrolytes

Science.gov (United States)

Yamaji, Katsuhiko; Xiong, Yue Ping; Kishimoto, Haruo; Horita, Teruhisa; Sakai, Natsuko; Brito, Manuel E.; Yokokawa, Harumi

Electronic conductivity of doped lanthanum gallate electrolytes were determined by using a Hebb-Wagner type polarization cell. Electronic conductivity of cobalt-doped, La0.8Sr0.2Ga0.8Mg0.15Co0.5O3-δ (LSGMC), and non cobalt-doped, La0.8Sr0.2Ga0.8Mg0.2O2.8 (LSGM8282), were measured as a function of oxygen partial pressures. The electronic conductivity of LSGM8282 showed a linear dependence on p(O2)1/4 in the higher p(O2) region, which is attributed to the electronic hole conductivity. The electronic conductivity of LSGMC showed a linear dependence on p(O2)1/6 in the higher p(O2) region. LSGMC has higher electronic conductivity than LSGM, and the conductivity was not clearly changed with temperatures between 600 and 800 °C. In lower p(O2) region, the electronic conductivity data have poor reproducibility and did not show any dependence on p(O2) because of the degradation of the electrolytes in severe reducing atmospheres.

Transparent conducting oxide nanotubes

Science.gov (United States)

Alivov, Yahya; Singh, Vivek; Ding, Yuchen; Nagpal, Prashant

2014-09-01

Thin film or porous membranes made of hollow, transparent, conducting oxide (TCO) nanotubes, with high chemical stability, functionalized surfaces and large surface areas, can provide an excellent platform for a wide variety of nanostructured photovoltaic, photodetector, photoelectrochemical and photocatalytic devices. While large-bandgap oxide semiconductors offer transparency for incident light (below their nominal bandgap), their low carrier concentration and poor conductivity makes them unsuitable for charge conduction. Moreover, materials with high conductivity have nominally low bandgaps and hence poor light transmittance. Here, we demonstrate thin films and membranes made from TiO2 nanotubes heavily-doped with shallow Niobium (Nb) donors (up to 10%, without phase segregation), using a modified electrochemical anodization process, to fabricate transparent conducting hollow nanotubes. Temperature dependent current-voltage characteristics revealed that TiO2 TCO nanotubes, doped with 10% Nb, show metal-like behavior with resistivity decreasing from 6.5 × 10-4 Ωcm at T = 300 K (compared to 6.5 × 10-1 Ωcm for nominally undoped nanotubes) to 2.2 × 10-4 Ωcm at T = 20 K. Optical properties, studied by reflectance measurements, showed light transmittance up to 90%, within wavelength range 400 nm-1000 nm. Nb doping also improves the field emission properties of TCO nanotubes demonstrating an order of magnitude increase in field-emitter current, compared to undoped samples.

A single-source precursor route to anisotropic halogen-doped zinc oxide particles as a promising candidate for new transparent conducting oxide materials

Directory of Open Access Journals (Sweden)

Daniela Lehr

2015-11-01

Full Text Available Numerous applications in optoelectronics require electrically conducting materials with high optical transparency over the entire visible light range. A solid solution of indium oxide and substantial amounts of tin oxide for electronic doping (ITO is currently the most prominent example for the class of so-called TCOs (transparent conducting oxides. Due to the limited, natural occurrence of indium and its steadily increasing price, it is highly desired to identify materials alternatives containing highly abundant chemical elements. The doping of other metal oxides (e.g., zinc oxide, ZnO is a promising approach, but two problems can be identified. Phase separation might occur at the required high concentration of the doping element, and for successful electronic modification it is mandatory that the introduced heteroelement occupies a defined position in the lattice of the host material. In the case of ZnO, most attention has been attributed so far to n-doping via substitution of Zn2+ by other metals (e.g., Al3+. Here, we present first steps towards n-doped ZnO-based TCO materials via substitution in the anion lattice (O2− versus halogenides. A special approach is presented, using novel single-source precursors containing a potential excerpt of the target lattice 'HalZn·Zn3O3' preorganized on the molecular scale (Hal = I, Br, Cl. We report about the synthesis of the precursors, their transformation into halogene-containing ZnO materials, and finally structural, optical and electronic properties are investigated using a combination of techniques including FT-Raman, low-T photoluminescence, impedance and THz spectroscopies.

The exothermic reaction route of a self-heatable conductive ink for rapid processable printed electronics

Science.gov (United States)

Shin, Dong-Youn; Han, Jin Wook; Chun, Sangki

2013-12-01

We report the exothermic reaction route and new capability of a self-heatable conductive ink (Ag2O and silver 2,2-dimethyloctanoate) in order to achieve both a low sintering temperature and electrical resistivity within a short sintering time for flexible printed electronics and display appliances. Unlike conventional conductive ink, which requires a costly external heating instrument for rapid sintering, self-heatable conductive ink by itself is capable of generating heat as high as 312 °C when its exothermic reaction is triggered at a temperature of 180 °C. This intensive exothermic reaction is found to result from the recursive reaction of the 2,2-dimethyloctanoate anion, which is thermally dissociated from silver 2,2-dimethyloctanoate, with silver oxide microparticles. Through this recursive reaction, a massive number of silver atoms are supplied from silver oxide microparticles, and the nucleation of silver atoms and the fusion of silver nanoparticles become the major source of heat. This exothermic reaction eventually realizes the electrical resistivity of self-heatable conductive ink as low as 27.5 μΩ cm within just 40 s by combining chemical annealing, which makes it suitable for the roll-to-roll printable electronics such as a flexible touch screen panel.We report the exothermic reaction route and new capability of a self-heatable conductive ink (Ag2O and silver 2,2-dimethyloctanoate) in order to achieve both a low sintering temperature and electrical resistivity within a short sintering time for flexible printed electronics and display appliances. Unlike conventional conductive ink, which requires a costly external heating instrument for rapid sintering, self-heatable conductive ink by itself is capable of generating heat as high as 312 °C when its exothermic reaction is triggered at a temperature of 180 °C. This intensive exothermic reaction is found to result from the recursive reaction of the 2,2-dimethyloctanoate anion, which is thermally

Wide and ultra-wide bandgap oxides: where paradigm-shift photovoltaics meets transparent power electronics

Science.gov (United States)

Pérez-Tomás, Amador; Chikoidze, Ekaterine; Jennings, Michael R.; Russell, Stephen A. O.; Teherani, Ferechteh H.; Bove, Philippe; Sandana, Eric V.; Rogers, David J.

2018-03-01

Oxides represent the largest family of wide bandgap (WBG) semiconductors and also offer a huge potential range of complementary magnetic and electronic properties, such as ferromagnetism, ferroelectricity, antiferroelectricity and high-temperature superconductivity. Here, we review our integration of WBG and ultra WBG semiconductor oxides into different solar cells architectures where they have the role of transparent conductive electrodes and/or barriers bringing unique functionalities into the structure such above bandgap voltages or switchable interfaces. We also give an overview of the state-of-the-art and perspectives for the emerging semiconductor β- Ga2O3, which is widely forecast to herald the next generation of power electronic converters because of the combination of an UWBG with the capacity to conduct electricity. This opens unprecedented possibilities for the monolithic integration in solar cells of both self-powered logic and power electronics functionalities. Therefore, WBG and UWBG oxides have enormous promise to become key enabling technologies for the zero emissions smart integration of the internet of things.

Synthesis and characterization of a novel electron conducting biocomposite as biofuel cell anode.

Science.gov (United States)

Perveen, Ruma; Inamuddin; Nasar, Abu; Beenish; Asiri, Abdullah M

2018-01-01

This study is based on the construction of an enzymatic bioanode adopting the exclusively reported layer-by-layer (LBL) assembly of Ppy-Ag-GO/ferritin (Frt)/glucose oxidase (GOx). The glassy carbon (GC) electrode was immobilised with the conducting polypyrrole (Ppy)-silver nanoparticles (Ag)-graphene oxide (GO) based biocomposite as electron transfer elevator, horse spleen ferritin (Frt) protein as electron transfer mediator and glucose oxidase (GOx) enzyme in layer by layer configuration. The fabricated bioanode exhibited good electrochemical performance with a maximum current response of 5.7mAcm -2 accompanied with biocompatibility and environmental stability because of the synergistic effect between outstanding properties of PPy, silver and GO, thereby, showing superior catalytic efficiency for the oxidation of glucose. Copyright © 2017. Published by Elsevier B.V.

Electron donating and acid-base properties of cerium oxide and its mixed oxides with alumina

International Nuclear Information System (INIS)

Sugunan, S.; Jalaja, J.M.

1994-01-01

The electron donating properties of cerium oxide activated at 300, 500 and 800 degC and of its mixed oxides with alumina were examined based on the adsorption of electron acceptors exhibiting different electron affinities. The surface acidity/basicity of the oxides was determined by titrimetry; the H 0,max values are given. The limit of electron transfer from the oxide surface lies within the region of 1.77 and 2.40 eV in terms of the electron affinity of the electron acceptor. Cerium oxide promotes the electron donor nature of alumina while leaving the limit of electron transfer unchanged. 2 tabs., 4 figs., 13 refs

Effects of interfacial Fe electronic structures on magnetic and electronic transport properties in oxide/NiFe/oxide heterostructures

International Nuclear Information System (INIS)

Liu, Qianqian; Chen, Xi; Zhang, Jing-Yan; Yang, Meiyin; Li, Xu-Jing; Jiang, Shao-Long; Liu, Yi-Wei; Cao, Yi; Wu, Zheng-Long; Feng, Chun; Ding, Lei; Yu, Guang-Hua

2015-01-01

Highlights: • The magnetic and transport properties of oxide/NiFe/oxide films were studied. • The oxide (SiO 2 , MgO and HfO 2 ) has different elemental electronegativity. • Redox reaction at different NiFe/oxide interface is dependent on the oxide layer. • Different interfacial electronic structures shown by XPS influence the properties. - Abstract: We report that the magnetic and electronic transport properties in oxide/NiFe(2 nm)/oxide film (oxide = SiO 2 , MgO or HfO 2 ) are strongly influenced by the electronic structure of NiFe/oxide interface. Magnetic measurements show that there exist magnetic dead layers in the SiO 2 sandwiched film and MgO sandwiched film, whereas there is no magnetic dead layer in the HfO 2 sandwiched film. Furthermore, in the ultrathin SiO 2 sandwiched film no magnetoresistance (MR) is detected, while in the ultrathin MgO sandwiched film and HfO 2 sandwiched film the MR ratios reach 0.35% and 0.88%, respectively. The investigation by X-ray photoelectron spectroscopy reveals that the distinct interfacial redox reactions, which are dependent on the oxide layers, lead to the variation of magnetic and transport properties in different oxide/NiFe/oxide heterostructures

Electron trapping during irradiation in reoxidized nitrided oxide

International Nuclear Information System (INIS)

Mallik, A.; Vasi, J.; Chandorkar, A.N.

1993-01-01

Isochronal detrapping experiments have been performed following irradiation under different gate biases in reoxidized nitrided oxide (RNO) MOS capacitors. These show electron trapping by the nitridation-induced electron traps at low oxide fields during irradiation. A difference in the detrapping behavior of trapped holes and electrons is observed, with trapped holes being detrapped at relatively lower temperatures compared to trapped electrons. Electron trapping shows a strong dependence on tile magnitude of the applied gate bias during irradiation but is independent of its polarity. Conventional oxide devices, as expected, do not show any electron trapping during irradiation by the native electron traps. Finally, a comparison of the isochronal detrapping behavior following irradiation and following avalanche injection of electrons has been made to estimate the extent of electron trapping. The results show that electron trapping by the nitridation-induced electron traps does not play the dominant role in improving radiation performance of RNO, though its contribution cannot be completely neglected for low oxide field irradiations

Conductive iron oxides accelerate thermophilic methanogenesis from acetate and propionate.

Science.gov (United States)

Yamada, Chihaya; Kato, Souichiro; Ueno, Yoshiyuki; Ishii, Masaharu; Igarashi, Yasuo

2015-06-01

Anaerobic digester is one of the attractive technologies for treatment of organic wastes and wastewater, while continuous development and improvements on their stable operation with efficient organic removal are required. Particles of conductive iron oxides (e.g., magnetite) are known to facilitate microbial interspecies electron transfer (termed as electric syntrophy). Electric syntrophy has been reported to enhance methanogenic degradation of organic acids by mesophilic communities in soil and anaerobic digester. Here we investigated the effects of supplementation of conductive iron oxides (magnetite) on thermophilic methanogenic microbial communities derived from a thermophilic anaerobic digester. Supplementation of magnetite accelerated methanogenesis from acetate and propionate under thermophilic conditions, while supplementation of ferrihydrite also accelerated methanogenesis from propionate. Microbial community analysis revealed that supplementation of magnetite drastically changed bacterial populations in the methanogenic acetate-degrading cultures, in which Tepidoanaerobacter sp. and Coprothermobacter sp. dominated. These results suggest that supplementation of magnetite induce electric syntrophy between organic acid-oxidizing bacteria and methanogenic archaea and accelerate methanogenesis even under thermophilic conditions. Findings from this study would provide a possibility for the achievement of stably operating thermophilic anaerobic digestion systems with high efficiency for removal of organics and generation of CH4. Copyright © 2014 The Society for Biotechnology, Japan. Published by Elsevier B.V. All rights reserved.

Structure of conduction electrons on polysilanes

Energy Technology Data Exchange (ETDEWEB)

Ichikawa, Tsuneki [Hokkaido Univ., Sapporo (Japan); Kumagai, Jun

1998-10-01

The orbital structures of conduction electrons on permethylated oligosilane, Si{sub 2n}(CH{sub 3}){sub 2n+2}(n = 2 - 8), and poly(cyclohexylmethylsilane) have been determined by the electron spin-echo envelope modulation signals of the radical anions of these silanes in a deuterated rigid matrix at 77 K. The conduction electron on permethylated oligosilane is delocalized over the entire main chain, whereas that on poly(cyclohexylmethylsilane) is localized on a part of the main chain composed of about six Si atoms. Quantum-chemical calculations suggest that Anderson localization due to fluctuation of {sigma} conjugation by conformational disorder of the main chain is responsible for the localization of both the conduction electron and the hole. (author)

Triple-conducting layered perovskites as cathode materials for proton-conducting solid oxide fuel cells.

Science.gov (United States)

Kim, Junyoung; Sengodan, Sivaprakash; Kwon, Goeun; Ding, Dong; Shin, Jeeyoung; Liu, Meilin; Kim, Guntae

2014-10-01

We report on an excellent anode-supported H(+) -SOFC material system using a triple conducting (H(+) /O(2-) /e(-) ) oxide (TCO) as a cathode material for H(+) -SOFCs. Generally, mixed ionic (O(2-) ) and electronic conductors (MIECs) have been selected as the cathode material of H(+) -SOFCs. In an H(+) -SOFC system, however, MIEC cathodes limit the electrochemically active sites to the interface between the proton conducting electrolyte and the cathode. New approaches to the tailoring of cathode materials for H(+) -SOFCs should therefore be considered. TCOs can effectively extend the electrochemically active sites from the interface between the cathode and the electrolyte to the entire surface of the cathode. The electrochemical performance of NBSCF/BZCYYb/BZCYYb-NiO shows excellent long term stability for 500 h at 1023 K with high power density of 1.61 W cm(-2) . © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Fabrication and excellent conductive performance of antimony-doped tin oxide-coated diatomite with porous structure

International Nuclear Information System (INIS)

Du Yucheng; Yan Jing; Meng Qi; Wang Jinshu; Dai Hongxing

2012-01-01

Graphical abstract: Antimony-doped tin oxide (ATO)-coated diatomite with porous structures are fabricated using the co-precipitation method. The porous ATO-coated diatomite material shows excellent conductive performance. Highlights: ► Sb-doped SnO 2 (ATO)-coated diatomite materials with porous structures are prepared. ► Sn/Sb ratio, ATO coating amount, pH value, and temperature influence resistivity. ► Porous ATO-coated diatomite materials show excellent conductive performance. ► The lowest resistivity of the porous ATO-coated diatomite sample is 10 Ω cm. - Abstract: Diatomite materials coated with antimony-doped tin oxide (ATO) were prepared by the co-precipitation method, and characterized by means of the techniques, such as X-ray diffraction, Fourier transform infrared spectroscopy, scanning electron microscopy, transmission electron microscopy, selected-area electron diffraction, X-ray fluorescence spectroscopy, and N 2 adsorption–desorption measurement. It was shown that the coated ATO possessed a tetragonal rutile crystal structure, and the ATO-coated diatomite materials had a multi-pore (micro- meso-, and macropores) architecture. The porous ATO-coated diatomite materials exhibited excellent electrical conductive behaviors. The best conductive performance (volume resistivity = 10 Ω cm) was achieved for the sample that was prepared under the conditions of Sn/Sb molar ratio = 5.2, Sn/Sb coating amount = 45 wt%, pH = 1.0, and reaction temperature = 50 °C. Such a conductive porous material is useful for the applications in physical and chemical fields.

Method of forming electronically conducting polymers on conducting and nonconducting substrates

Science.gov (United States)

Murphy, Oliver J. (Inventor); Hitchens, G. Duncan (Inventor); Hodko, Dalibor (Inventor); Clarke, Eric T. (Inventor); Miller, David L. (Inventor); Parker, Donald L. (Inventor)

2001-01-01

The present invention provides electronically conducting polymer films formed from photosensitive formulations of pyrrole and an electron acceptor that have been selectively exposed to UV light, laser light, or electron beams. The formulations may include photoinitiators, flexibilizers, solvents and the like. These solutions can be used in applications including printed circuit boards and through-hole plating and enable direct metallization processes on non-conducting substrates. After forming the conductive polymer patterns, a printed wiring board can be formed by sensitizing the polymer with palladium and electrolytically depositing copper.

Phosphonic Acids for Interfacial Engineering of Transparent Conductive Oxides

KAUST Repository

Paniagua, Sergio A.; Giordano, Anthony J.; Smith, O’ Neil L.; Barlow, Stephen; Li, Hong; Armstrong, Neal R.; Pemberton, Jeanne E.; Bredas, Jean-Luc; Ginger, David; Marder, Seth R.

2016-01-01

Transparent conducting oxides (TCOs), such as indium tin oxide and zinc oxide, play an important role as electrode materials in organic-semiconductor devices. The properties of the inorganic-organic interface - the offset between the TCO Fermi level and the relevant transport level, the extent to which the organic semiconductor can wet the oxide surface, and the influence of the surface on semiconductor morphology - significantly affect device performance. This review surveys the literature on TCO modification with phosphonic acids (PAs), which has increasingly been used to engineer these interfacial properties. The first part outlines the relevance of TCO surface modification to organic electronics, surveys methods for the synthesis of PAs, discusses the modes by which they can bind to TCO surfaces, and compares PAs to alternative organic surface modifiers. The next section discusses methods of PA monolayer deposition, the kinetics of monolayer formation, and structural evidence regarding molecular orientation on TCOs. The next sections discuss TCO work-function modification using PAs, tuning of TCO surface energy using PAs, and initiation of polymerizations from TCO-tethered PAs. Finally, studies that examine the use of PA-modified TCOs in organic light-emitting diodes and organic photovoltaics are compared. © 2016 American Chemical Society.

Phosphonic Acids for Interfacial Engineering of Transparent Conductive Oxides

KAUST Repository

Paniagua, Sergio A.

2016-05-26

Transparent conducting oxides (TCOs), such as indium tin oxide and zinc oxide, play an important role as electrode materials in organic-semiconductor devices. The properties of the inorganic-organic interface - the offset between the TCO Fermi level and the relevant transport level, the extent to which the organic semiconductor can wet the oxide surface, and the influence of the surface on semiconductor morphology - significantly affect device performance. This review surveys the literature on TCO modification with phosphonic acids (PAs), which has increasingly been used to engineer these interfacial properties. The first part outlines the relevance of TCO surface modification to organic electronics, surveys methods for the synthesis of PAs, discusses the modes by which they can bind to TCO surfaces, and compares PAs to alternative organic surface modifiers. The next section discusses methods of PA monolayer deposition, the kinetics of monolayer formation, and structural evidence regarding molecular orientation on TCOs. The next sections discuss TCO work-function modification using PAs, tuning of TCO surface energy using PAs, and initiation of polymerizations from TCO-tethered PAs. Finally, studies that examine the use of PA-modified TCOs in organic light-emitting diodes and organic photovoltaics are compared. © 2016 American Chemical Society.

Effect of oxidizer on grain size and low temperature DC electrical conductivity of tin oxide nanomaterial synthesized by gel combustion method

International Nuclear Information System (INIS)

Rajeeva, M. P.; Jayanna, H. S.; Ashok, R. L.; Naveen, C. S.; Bothla, V. Prasad

2014-01-01

Nanocrystalline Tin oxide material with different grain size was synthesized using gel combustion method by varying the fuel (C 6 H 8 O 7 ) to oxidizer (HNO 3 ) molar ratio by keeping the amount of fuel as constant. The prepared samples were characterized by using X-Ray Diffraction (XRD), Scanning Electron Microscope (SEM) and Energy Dispersive Analysis X-ray Spectroscopy (EDAX). The effect of fuel to oxidizer molar ratio in the gel combustion method was investigated by inspecting the grain size of nano SnO 2 powder. The grain size was found to be reduced with the amount of oxidizer increases from 0 to 6 moles in the step of 2. The X-ray diffraction patterns of the calcined product showed the formation of high purity tetragonal tin (IV) oxide with the grain size in the range of 12 to 31 nm which was calculated by Scherer's formula. Molar ratio and temperature dependence of DC electrical conductivity of SnO 2 nanomaterial was studied using Keithley source meter. DC electrical conductivity of SnO 2 nanomaterial increases with the temperature from 80K to 300K. From the study it was observed that the DC electrical conductivity of SnO 2 nanomaterial decreases with the grain size at constant temperature

Conduction at domain walls in oxide multiferroics

Science.gov (United States)

Seidel, J.; Martin, L. W.; He, Q.; Zhan, Q.; Chu, Y.-H.; Rother, A.; Hawkridge, M. E.; Maksymovych, P.; Yu, P.; Gajek, M.; Balke, N.; Kalinin, S. V.; Gemming, S.; Wang, F.; Catalan, G.; Scott, J. F.; Spaldin, N. A.; Orenstein, J.; Ramesh, R.

2009-03-01

Domain walls may play an important role in future electronic devices, given their small size as well as the fact that their location can be controlled. Here, we report the observation of room-temperature electronic conductivity at ferroelectric domain walls in the insulating multiferroic BiFeO3. The origin and nature of the observed conductivity are probed using a combination of conductive atomic force microscopy, high-resolution transmission electron microscopy and first-principles density functional computations. Our analyses indicate that the conductivity correlates with structurally driven changes in both the electrostatic potential and the local electronic structure, which shows a decrease in the bandgap at the domain wall. Additionally, we demonstrate the potential for device applications of such conducting nanoscale features.

Heterojunction oxide thin-film transistors with unprecedented electron mobility grown from solution.

Science.gov (United States)

Faber, Hendrik; Das, Satyajit; Lin, Yen-Hung; Pliatsikas, Nikos; Zhao, Kui; Kehagias, Thomas; Dimitrakopulos, George; Amassian, Aram; Patsalas, Panos A; Anthopoulos, Thomas D

2017-03-01

Thin-film transistors made of solution-processed metal oxide semiconductors hold great promise for application in the emerging sector of large-area electronics. However, further advancement of the technology is hindered by limitations associated with the extrinsic electron transport properties of the often defect-prone oxides. We overcome this limitation by replacing the single-layer semiconductor channel with a low-dimensional, solution-grown In 2 O 3 /ZnO heterojunction. We find that In 2 O 3 /ZnO transistors exhibit band-like electron transport, with mobility values significantly higher than single-layer In 2 O 3 and ZnO devices by a factor of 2 to 100. This marked improvement is shown to originate from the presence of free electrons confined on the plane of the atomically sharp heterointerface induced by the large conduction band offset between In 2 O 3 and ZnO. Our finding underscores engineering of solution-grown metal oxide heterointerfaces as an alternative strategy to thin-film transistor development and has the potential for widespread technological applications.

Heterojunction oxide thin-film transistors with unprecedented electron mobility grown from solution

KAUST Repository

Faber, Hendrik

2017-04-28

Thin-film transistors made of solution-processed metal oxide semiconductors hold great promise for application in the emerging sector of large-area electronics. However, further advancement of the technology is hindered by limitations associated with the extrinsic electron transport properties of the often defect-prone oxides. We overcome this limitation by replacing the single-layer semiconductor channel with a low-dimensional, solution-grown In2O3/ZnO heterojunction. We find that In2O3/ZnO transistors exhibit band-like electron transport, with mobility values significantly higher than single-layer In2O3 and ZnO devices by a factor of 2 to 100. This marked improvement is shown to originate from the presence of free electrons confined on the plane of the atomically sharp heterointerface induced by the large conduction band offset between In2O3 and ZnO. Our finding underscores engineering of solution-grown metal oxide heterointerfaces as an alternative strategy to thin-film transistor development and has the potential for widespread technological applications.

Mechanistic analysis of temperature-dependent current conduction through thin tunnel oxide in n+-polySi/SiO2/n+-Si structures

Science.gov (United States)

Samanta, Piyas

2017-09-01

We present a detailed investigation on temperature-dependent current conduction through thin tunnel oxides grown on degenerately doped n-type silicon (n+-Si) under positive bias ( VG ) on heavily doped n-type polycrystalline silicon (n+-polySi) gate in metal-oxide-semiconductor devices. The leakage current measured between 298 and 573 K and at oxide fields ranging from 6 to 10 MV/cm is primarily attributed to Poole-Frenkel (PF) emission of trapped electrons from the neutral electron traps located in the silicon dioxide (SiO2) band gap in addition to Fowler-Nordheim (FN) tunneling of electrons from n+-Si acting as the drain node in FLOating gate Tunnel OXide Electrically Erasable Programmable Read-Only Memory devices. Process-induced neutral electron traps are located at 0.18 eV and 0.9 eV below the SiO2 conduction band. Throughout the temperature range studied here, PF emission current IPF dominates FN electron tunneling current IFN at oxide electric fields Eox between 6 and 10 MV/cm. A physics based new analytical formula has been developed for FN tunneling of electrons from the accumulation layer of degenerate semiconductors at a wide range of temperatures incorporating the image force barrier rounding effect. FN tunneling has been formulated in the framework of Wentzel-Kramers-Brilloiun taking into account the correction factor due to abrupt variation of the energy barrier at the cathode/oxide interface. The effect of interfacial and near-interfacial trapped-oxide charges on FN tunneling has also been investigated in detail at positive VG . The mechanism of leakage current conduction through SiO2 films plays a crucial role in simulation of time-dependent dielectric breakdown of the memory devices and to precisely predict the normal operating field or applied floating gate (FG) voltage for lifetime projection of the devices. In addition, we present theoretical results showing the effect of drain doping concentration on the FG leakage current.

Conductivity in transparent oxide semiconductors.

Science.gov (United States)

King, P D C; Veal, T D

2011-08-24

Despite an extensive research effort for over 60 years, an understanding of the origins of conductivity in wide band gap transparent conducting oxide (TCO) semiconductors remains elusive. While TCOs have already found widespread use in device applications requiring a transparent contact, there are currently enormous efforts to (i) increase the conductivity of existing materials, (ii) identify suitable alternatives, and (iii) attempt to gain semiconductor-engineering levels of control over their carrier density, essential for the incorporation of TCOs into a new generation of multifunctional transparent electronic devices. These efforts, however, are dependent on a microscopic identification of the defects and impurities leading to the high unintentional carrier densities present in these materials. Here, we review recent developments towards such an understanding. While oxygen vacancies are commonly assumed to be the source of the conductivity, there is increasing evidence that this is not a sufficient mechanism to explain the total measured carrier concentrations. In fact, many studies suggest that oxygen vacancies are deep, rather than shallow, donors, and their abundance in as-grown material is also debated. We discuss other potential contributions to the conductivity in TCOs, including other native defects, their complexes, and in particular hydrogen impurities. Convincing theoretical and experimental evidence is presented for the donor nature of hydrogen across a range of TCO materials, and while its stability and the role of interstitial versus substitutional species are still somewhat open questions, it is one of the leading contenders for yielding unintentional conductivity in TCOs. We also review recent work indicating that the surfaces of TCOs can support very high carrier densities, opposite to the case for conventional semiconductors. In thin-film materials/devices and, in particular, nanostructures, the surface can have a large impact on the total

One-step synthesis of high conductivity silver nanoparticle-reduced graphene oxide composite films by electron beam irradiation

Energy Technology Data Exchange (ETDEWEB)

Liu, Gang; Wang, Yujia; Pu, Xianjuan; Jiang, Yong; Cheng, Lingli, E-mail: chenglingli@shu.edu.cn; Jiao, Zheng, E-mail: zjiao@shu.edu.cn

2015-09-15

Graphical abstract: - Highlights: • Both graphene oxide and silver ion were reduced simultaneously by electron beam-based method. • The size of AgNPs can be controlled by changing the irradiation dose of electron beam. • The AgNPs/rGO nanocomposite exhibits much lower sheet resistivity (0.06 Ω m). - Abstract: A rapid, eco-friendly, one-step electron beam (EB)-based method for both the reduction of graphene oxide and loading of Ag nanoparticles (AgNPs) were achieved. Further, the effects of irradiation dose on the morphology of AgNPs and the sheet resistance of Ag nanoparticles/reduced graphene oxide (AgNPs/rGO) were studied. The results reveal that when the irradiation dose increased from 70 kGy to 350 kGy, the size of the AgNPs decreased and became uniformly distributed over the surface of the rGO nanosheets. However the size of the AgNPs increased when the irradiation dose reached 500 kGy. Four-point probe measurement showed that the sheet resistance of the AgNPs/rGO films decreased with decreasing AgNPs size. The lowest sheet resistivity of 0.06 Ω m was obtained in the film corresponding to 350 kGy irradiation dose, which showed a much lower resistivity than the GO film (5.04 × 10{sup 5} Ω m). The formation mechanisms of the as-prepared AgNPs/rGO nanocomposites were proposed. This study provides a fast and eco-friendly EB irradiation induced method to controlling the dimensions of AgNPs/rGO nanocomposites, which can strongly support the mass production of AgNPs/rGO nanocomposites for practical applications.

One-step synthesis of high conductivity silver nanoparticle-reduced graphene oxide composite films by electron beam irradiation

International Nuclear Information System (INIS)

Liu, Gang; Wang, Yujia; Pu, Xianjuan; Jiang, Yong; Cheng, Lingli; Jiao, Zheng

2015-01-01

Graphical abstract: - Highlights: • Both graphene oxide and silver ion were reduced simultaneously by electron beam-based method. • The size of AgNPs can be controlled by changing the irradiation dose of electron beam. • The AgNPs/rGO nanocomposite exhibits much lower sheet resistivity (0.06 Ω m). - Abstract: A rapid, eco-friendly, one-step electron beam (EB)-based method for both the reduction of graphene oxide and loading of Ag nanoparticles (AgNPs) were achieved. Further, the effects of irradiation dose on the morphology of AgNPs and the sheet resistance of Ag nanoparticles/reduced graphene oxide (AgNPs/rGO) were studied. The results reveal that when the irradiation dose increased from 70 kGy to 350 kGy, the size of the AgNPs decreased and became uniformly distributed over the surface of the rGO nanosheets. However the size of the AgNPs increased when the irradiation dose reached 500 kGy. Four-point probe measurement showed that the sheet resistance of the AgNPs/rGO films decreased with decreasing AgNPs size. The lowest sheet resistivity of 0.06 Ω m was obtained in the film corresponding to 350 kGy irradiation dose, which showed a much lower resistivity than the GO film (5.04 × 10 5 Ω m). The formation mechanisms of the as-prepared AgNPs/rGO nanocomposites were proposed. This study provides a fast and eco-friendly EB irradiation induced method to controlling the dimensions of AgNPs/rGO nanocomposites, which can strongly support the mass production of AgNPs/rGO nanocomposites for practical applications

Reversible solid oxide fuel cells (R-SOFCs) with chemically stable proton-conducting oxides

KAUST Repository

Bi, Lei; Boulfrad, Samir; Traversa, Enrico

2015-01-01

Proton-conducting oxides offer a promising way of lowering the working temperature of solid oxide cells to the intermediate temperate range (500 to 700. °C) due to their better ionic conductivity. In addition, the application of proton

Temperature dependent electronic conduction in semiconductors

International Nuclear Information System (INIS)

Roberts, G.G.; Munn, R.W.

1980-01-01

This review describes the temperature dependence of bulk-controlled electronic currents in semiconductors. The scope of the article is wide in that it contrasts conduction mechanisms in inorganic and organic solids and also single crystal and disordered semiconductors. In many experimental situations it is the metal-semiconductor contact or the interface between two dissimilar semiconductors that governs the temperature dependence of the conductivity. However, in order to keep the length of the review within reasonable bounds, these topics have been largely avoided and emphasis is therefore placed on bulk-limited currents. A central feature of electronic conduction in semiconductors is the concentrations of mobile electrons and holes that contribute to the conductivity. Various statistical approaches may be used to calculate these densities which are normally strongly temperature dependent. Section 1 emphasizes the relationship between the position of the Fermi level, the distribution of quantum states, the total number of electrons available and the absolute temperature of the system. The inclusion of experimental data for several materials is designed to assist the experimentalist in his interpretation of activation energy curves. Sections 2 and 3 refer to electronic conduction in disordered solids and molecular crystals, respectively. In these cases alternative approaches to the conventional band theory approach must be considered. For example, the velocities of the charge carriers are usually substantially lower than those in conventional inorganic single crystal semiconductors, thus introducing the possibility of an activated mobility. Some general electronic properties of these materials are given in the introduction to each of these sections and these help to set the conduction mechanisms in context. (orig.)

Transport of electrons in lead oxide studied by CELIV technique

International Nuclear Information System (INIS)

Semeniuk, O; Juska, G; Oelerich, J O; Jandieri, K; Baranovskii, S D; Reznik, A

2017-01-01

Although polycrystalline lead oxide (PbO) has a long history of application in optoelectronics and imaging, the transport mechanism for electrons in this material has not yet been clarified. Using the photo-generated charge extraction by linear increasing voltage (photo-CELIV) technique, we provide the temperature- and field-dependences of electron mobility in poly-PbO. It is found that electrons undergo dispersive transport, i.e. their mobility decreases in the course of time. Multiple trapping of electrons from the conduction band into the developed band tail is revealed as the dominant transport mechanism. This differs dramatically from the dispersive transport of holes in the same material, dominated by topological factors and not by energy disorder. (paper)

Fabrication and excellent conductive performance of antimony-doped tin oxide-coated diatomite with porous structure

Energy Technology Data Exchange (ETDEWEB)

Du Yucheng, E-mail: ychengdu@bjut.edu.cn [Key Lab of Advanced Functional Materials, Ministry of Education, College of Materials Science and Engineering, Beijing University of Technology, Beijing 100124 (China); Yan Jing; Meng Qi; Wang Jinshu [Key Lab of Advanced Functional Materials, Ministry of Education, College of Materials Science and Engineering, Beijing University of Technology, Beijing 100124 (China); Dai Hongxing, E-mail: hxdai@bjut.edu.cn [Laboratory of Catalysis Chemistry and Nanoscience, Department of Chemistry and Chemical Engineering, College of Environmental and Energy Engineering, Beijing University of Technology, Beijing 100124 (China)

2012-04-16

Graphical abstract: Antimony-doped tin oxide (ATO)-coated diatomite with porous structures are fabricated using the co-precipitation method. The porous ATO-coated diatomite material shows excellent conductive performance. Highlights: Black-Right-Pointing-Pointer Sb-doped SnO{sub 2} (ATO)-coated diatomite materials with porous structures are prepared. Black-Right-Pointing-Pointer Sn/Sb ratio, ATO coating amount, pH value, and temperature influence resistivity. Black-Right-Pointing-Pointer Porous ATO-coated diatomite materials show excellent conductive performance. Black-Right-Pointing-Pointer The lowest resistivity of the porous ATO-coated diatomite sample is 10 {Omega} cm. - Abstract: Diatomite materials coated with antimony-doped tin oxide (ATO) were prepared by the co-precipitation method, and characterized by means of the techniques, such as X-ray diffraction, Fourier transform infrared spectroscopy, scanning electron microscopy, transmission electron microscopy, selected-area electron diffraction, X-ray fluorescence spectroscopy, and N{sub 2} adsorption-desorption measurement. It was shown that the coated ATO possessed a tetragonal rutile crystal structure, and the ATO-coated diatomite materials had a multi-pore (micro- meso-, and macropores) architecture. The porous ATO-coated diatomite materials exhibited excellent electrical conductive behaviors. The best conductive performance (volume resistivity = 10 {Omega} cm) was achieved for the sample that was prepared under the conditions of Sn/Sb molar ratio = 5.2, Sn/Sb coating amount = 45 wt%, pH = 1.0, and reaction temperature = 50 Degree-Sign C. Such a conductive porous material is useful for the applications in physical and chemical fields.

ZnO based transparent conductive oxide films with controlled type of conduction

Energy Technology Data Exchange (ETDEWEB)

Zaharescu, M., E-mail: mzaharescu@icf.ro [Institute of Physical Chemistry “Ilie Murgulescu”, Romanian Academy, 202 Splaiul Independentei, 060021 Bucharest (Romania); Mihaiu, S., E-mail: smihaiu@icf.ro [Institute of Physical Chemistry “Ilie Murgulescu”, Romanian Academy, 202 Splaiul Independentei, 060021 Bucharest (Romania); Toader, A. [Institute of Physical Chemistry “Ilie Murgulescu”, Romanian Academy, 202 Splaiul Independentei, 060021 Bucharest (Romania); Atkinson, I., E-mail: irinaatkinson@yahoo.com [Institute of Physical Chemistry “Ilie Murgulescu”, Romanian Academy, 202 Splaiul Independentei, 060021 Bucharest (Romania); Calderon-Moreno, J.; Anastasescu, M.; Nicolescu, M.; Duta, M.; Gartner, M. [Institute of Physical Chemistry “Ilie Murgulescu”, Romanian Academy, 202 Splaiul Independentei, 060021 Bucharest (Romania); Vojisavljevic, K.; Malic, B. [Institute Jožef Stefan, Ljubljana (Slovenia); Ivanov, V.A.; Zaretskaya, E.P. [State Scientific and Production Association “Scientific-Practical Materials Research Center of the National Academy of Science Belarus, P. Brovska str.19, 220072, Minsk (Belarus)

2014-11-28

The transparent conductive oxide films with controlled type of conduction are of great importance and their preparation is intensively studied. In our work, the preparation of such films based on doped ZnO was realized in order to achieve controlled type of conduction and high concentration of the charge carriers. Sol–gel method was used for films preparation and several dopants were tested (Sn, Li, Ni). Multilayer deposition was performed on several substrates: SiO{sub 2}/Si wafers, silica-soda-lime and/or silica glasses. The structural and morphological characterization of the obtained films were done by scanning electron microscopy, X-ray diffraction, X-ray fluorescence, X-ray photoelectron spectroscopy and atomic force microscopy respectively, while spectroscopic ellipsometry and transmittance measurements were done for determination of optical properties. The selected samples with the best structural, morphological and optical properties were subjected to electrical measurement (Hall and Seebeck effect). In all studied cases, samples with good adherence and homogeneous morphology as well as monophasic wurtzite type structure were obtained. The optical constants (refractive index and extinction coefficient) were calculated from spectroscopic ellipsometry data using Cauchy model. Films with n- or p-type conduction were obtained depending on the composition, number of deposition and thermal treatment temperature. - Highlights: • Transparent conductive ZnO based thin films were prepared by the sol–gel method. • Controlled type of conduction is obtained in (Sn, Li) doped and Li-Ni co-doped ZnO films. • Hall and Seebeck measurements proved the p-type conductivity for Li-Ni co-doped ZnO films. • The p-type conductivity was maintained even after 4-months of storage. • Influence of dopant- and substrate-type on the ZnO films properties was established.

High-Pressure Thermodynamic Properties of f-electron Metals, Transition Metal Oxides, and Half-Metallic Magnets

International Nuclear Information System (INIS)

Richard T. Scalettar; Warren E. Pickett

2005-01-01

This project involves research into the thermodynamic properties of f-electron metals, transition metal oxides, and half-metallic magnets at high pressure. These materials are ones in which the changing importance of electron-electron interactions as the distance between atoms is varied can tune the system through phase transitions from localized to delocalized electrons, from screened to unscreened magnetic moments, and from normal metal to one in which only a single spin specie can conduct. Three main thrusts are being pursued: (1) Mott transitions in transition metal oxides, (2) magnetism in half-metallic compounds, and (3) large volume-collapse transitions in f-band metals

High-Pressure Thermodynamic Properties of f-electron Metals, Transition Metal Oxides, and Half-Metallic Magnets

Energy Technology Data Exchange (ETDEWEB)

Scalettar, Richard T.; Pickett, Warren E.

2004-07-01

This project involves research into the thermodynamic properties of f-electron metals, transition metal oxides, and half-metallic magnets at high pressure. These materials are ones in which the changing importance of electron-electron interactions as the distance between atoms is varied can tune the system through phase transitions from localized to delocalized electrons, from screened to unscreened magnetic moments, and from normal metal to one in which only a single spin specie can conduct. Three main thrusts are being pursued: (1) Mott transitions in transition metal oxides, (2) magnetism in half-metallic compounds, and (3) large volume-collapse transitions in f-band metals.

High-Pressure Thermodynamic Properties of f-electron Metals, Transition Metal Oxides, and Half-Metallic Magnets

Energy Technology Data Exchange (ETDEWEB)

Richard T. Scalettar; Warren E. Pickett

2005-08-02

This project involves research into the thermodynamic properties of f-electron metals, transition metal oxides, and half-metallic magnets at high pressure. These materials are ones in which the changing importance of electron-electron interactions as the distance between atoms is varied can tune the system through phase transitions from localized to delocalized electrons, from screened to unscreened magnetic moments, and from normal metal to one in which only a single spin specie can conduct. Three main thrusts are being pursued: (i) Mott transitions in transition metal oxides, (ii) magnetism in half-metallic compounds, and (iii) large volume-collapse transitions in f-band metals.

Oxide interfaces with enhanced ion conductivity

NARCIS (Netherlands)

Leon, C.; Santamaria, J.; Boukamp, Bernard A.

2013-01-01

The new field of nano-ionics is expected to yield large improvements in the performance of oxide-based energy generation and storage devices based on exploiting size effects in ion conducting materials. The search for novel materials with enhanced ionic conductivity for application in energy devices

Pseudo-diode based on protonic/electronic hybrid oxide transistor

Science.gov (United States)

Fu, Yang Ming; Liu, Yang Hui; Zhu, Li Qiang; Xiao, Hui; Song, An Ran

2018-01-01

Current rectification behavior has been proved to be essential in modern electronics. Here, a pseudo-diode is proposed based on protonic/electronic hybrid indium-gallium-zinc oxide electric-double-layer (EDL) transistor. The oxide EDL transistors are fabricated by using phosphorous silicate glass (PSG) based proton conducting electrolyte as gate dielectric. A diode operation mode is established on the transistor, originating from field configurable proton fluxes within the PSG electrolyte. Current rectification ratios have been modulated to values ranged between ˜4 and ˜50 000 with gate electrode biased at voltages ranged between -0.7 V and 0.1 V. Interestingly, the proposed pseudo-diode also exhibits field reconfigurable threshold voltages. When the gate is biased at -0.5 V and 0.3 V, threshold voltages are set to ˜-1.3 V and -0.55 V, respectively. The proposed pseudo-diode may find potential applications in brain-inspired platforms and low-power portable systems.

The exothermic reaction route of a self-heatable conductive ink for rapid processable printed electronics.

Science.gov (United States)

Shin, Dong-Youn; Han, Jin Wook; Chun, Sangki

2014-01-07

We report the exothermic reaction route and new capability of a self-heatable conductive ink (Ag2O and silver 2,2-dimethyloctanoate) in order to achieve both a low sintering temperature and electrical resistivity within a short sintering time for flexible printed electronics and display appliances. Unlike conventional conductive ink, which requires a costly external heating instrument for rapid sintering, self-heatable conductive ink by itself is capable of generating heat as high as 312 °C when its exothermic reaction is triggered at a temperature of 180 °C. This intensive exothermic reaction is found to result from the recursive reaction of the 2,2-dimethyloctanoate anion, which is thermally dissociated from silver 2,2-dimethyloctanoate, with silver oxide microparticles. Through this recursive reaction, a massive number of silver atoms are supplied from silver oxide microparticles, and the nucleation of silver atoms and the fusion of silver nanoparticles become the major source of heat. This exothermic reaction eventually realizes the electrical resistivity of self-heatable conductive ink as low as 27.5 μΩ cm within just 40 s by combining chemical annealing, which makes it suitable for the roll-to-roll printable electronics such as a flexible touch screen panel.

Correlative scanning electron and confocal microscopy imaging of labeled cells coated by indium-tin-oxide

KAUST Repository

Rodighiero, Simona

2015-03-22

Confocal microscopy imaging of cells allows to visualize the presence of specific antigens by using fluorescent tags or fluorescent proteins, with resolution of few hundreds of nanometers, providing their localization in a large field-of-view and the understanding of their cellular function. Conversely, in scanning electron microscopy (SEM), the surface morphology of cells is imaged down to nanometer scale using secondary electrons. Combining both imaging techniques have brought to the correlative light and electron microscopy, contributing to investigate the existing relationships between biological surface structures and functions. Furthermore, in SEM, backscattered electrons (BSE) can image local compositional differences, like those due to nanosized gold particles labeling cellular surface antigens. To perform SEM imaging of cells, they could be grown on conducting substrates, but obtaining images of limited quality. Alternatively, they could be rendered electrically conductive, coating them with a thin metal layer. However, when BSE are collected to detect gold-labeled surface antigens, heavy metals cannot be used as coating material, as they would mask the BSE signal produced by the markers. Cell surface could be then coated with a thin layer of chromium, but this results in a loss of conductivity due to the fast chromium oxidation, if the samples come in contact with air. In order to overcome these major limitations, a thin layer of indium-tin-oxide was deposited by ion-sputtering on gold-decorated HeLa cells and neurons. Indium-tin-oxide was able to provide stable electrical conductivity and preservation of the BSE signal coming from the gold-conjugated markers. © 2015 Wiley Periodicals, Inc.

A graphene oxide-carbon nanotube grid for high-resolution transmission electron microscopy of nanomaterials

International Nuclear Information System (INIS)

Zhang Lina; Zhang Haoxu; Zhou Ruifeng; Chen Zhuo; Li Qunqing; Fan Shoushan; Jiang Kaili; Ge Guanglu; Liu Renxiao

2011-01-01

A novel grid for use in transmission electron microscopy is developed. The supporting film of the grid is composed of thin graphene oxide films overlying a super-aligned carbon nanotube network. The composite film combines the advantages of graphene oxide and carbon nanotube networks and has the following properties: it is ultra-thin, it has a large flat and smooth effective supporting area with a homogeneous amorphous appearance, high stability, and good conductivity. The graphene oxide-carbon nanotube grid has a distinct advantage when characterizing the fine structure of a mass of nanomaterials over conventional amorphous carbon grids. Clear high-resolution transmission electron microscopy images of various nanomaterials are obtained easily using the new grids.

Transparent oxide electronics from materials to devices

CERN Document Server

Martins, Rodrigo; Barquinha, Pedro; Pereira, Luis

2012-01-01

Transparent electronics is emerging as one of the most promising technologies for the next generation of electronic products, away from the traditional silicon technology. It is essential for touch display panels, solar cells, LEDs and antistatic coatings. The book describes the concept of transparent electronics, passive and active oxide semiconductors, multicomponent dielectrics and their importance for a new era of novel electronic materials and products. This is followed by a short history of transistors, and how oxides have revolutionized this field. It concludes with a glance at lo

High mobility transparent conducting oxides for thin film solar cells

International Nuclear Information System (INIS)

Calnan, S.; Tiwari, A.N.

2010-01-01

A special class of transparent conducting oxides (TCO) with high mobility of > 65 cm 2 V -1 s -1 allows film resistivity in the low 10 -4 Ω cm range and a high transparency of > 80% over a wide spectrum, from 300 nm to beyond 1500 nm. This exceptional coincidence of desirable optical and electrical properties provides opportunities to improve the performance of opto-electronic devices and opens possibilities for new applications. Strategies to attain high mobility (HM) TCO materials as well as the current status of such materials based on indium and cadmium containing oxides are presented. Various concepts used to understand the underlying mechanisms for high mobility in HMTCO films are discussed. Examples of HMTCO layers used as transparent electrodes in thin film solar cells are used to illustrate possible improvements in solar cell performance. Finally, challenges and prospects for further development of HMTCO materials are discussed.

Large-Area Chemical Vapor Deposited MoS2 with Transparent Conducting Oxide Contacts toward Fully Transparent 2D Electronics

KAUST Repository

Dai, Zhenyu; Wang, Zhenwei; He, Xin; Zhang, Xixiang; Alshareef, Husam N.

2017-01-01

2D semiconductors are poised to revolutionize the future of electronics and photonics, much like transparent oxide conductors and semiconductors have revolutionized the display industry. Herein, these two types of materials are combined to realize

Silicon oxide: a non-innocent surface for molecular electronics and nanoelectronics studies.

Science.gov (United States)

Yao, Jun; Zhong, Lin; Natelson, Douglas; Tour, James M

2011-02-02

Silicon oxide (SiO(x)) has been widely used in many electronic systems as a supportive and insulating medium. Here, we demonstrate various electrical phenomena such as resistive switching and related nonlinear conduction, current hysteresis, and negative differential resistance intrinsic to a thin layer of SiO(x). These behaviors can largely mimic numerous electrical phenomena observed in molecules and other nanomaterials, suggesting that substantial caution should be paid when studying conduction in electronic systems with SiO(x) as a component. The actual electrical phenomena can be the result of conduction from SiO(x) at a post soft-breakdown state and not the presumed molecular or nanomaterial component. These electrical properties and the underlying mechanisms are discussed in detail.

Conducting polymer based biomolecular electronic devices

Indian Academy of Sciences (India)

Conducting polymers; LB films; biosensor microactuators; monolayers. ... have been projected for applications for a wide range of biomolecular electronic devices such as optical, electronic, drug-delivery, memory and biosensing devices.

Cellulose nanofibers/reduced graphene oxide flexible transparent conductive paper.

Science.gov (United States)

Gao, Kezheng; Shao, Ziqiang; Wu, Xue; Wang, Xi; Li, Jia; Zhang, Yunhua; Wang, Wenjun; Wang, Feijun

2013-08-14

The cellulose nanofibers (CNFs) paper exhibit high visible light transmittance, high mechanical strength, and excellent flexibility. Therefore, CNFs paper may be an excellent substrate material for flexible transparent electronic devices. In this paper, we endeavor to prepare CNFs-based flexible transparent conductive paper by layer-by-layer (LbL) assembly using divalent copper ions (Cu(2+)) as the crosslinking agent. The thickness of the reduced graphene oxide (RGO) active layer in the CNFs paper can be controlled by the cycle times of the LbL assembly. CNFs/[RGO]20 paper has the sheet resistances of ∼2.5 kΩ/□, and the transmittance of about 76% at a wavelength of 550 nm. Furthermore, CNFs/[RGO]20 paper inherits the excellent mechanical properties of CNFs paper, and the ultimate strength is about 136 MPa. CNFs-based flexible transparent conductive paper also exhibits excellent electrical stability and flexibility. Copyright © 2013. Published by Elsevier Ltd.

Electron transport properties of indium oxide - indium nitride metal-oxide-semiconductor heterostructures

International Nuclear Information System (INIS)

Wang, C.Y.; Hauguth, S.; Polyakov, V.; Schwierz, F.; Cimalla, V.; Kups, T.; Himmerlich, M.; Schaefer, J.A.; Krischok, S.; Ambacher, O.; Morales, F.M.; Lozano, J.G.; Gonzalez, D.; Lebedev, V.

2008-01-01

The structural, chemical and electron transport properties of In 2 O 3 /InN heterostructures and oxidized InN epilayers are reported. It is shown that the accumulation of electrons at the InN surface can be manipulated by the formation of a thin surface oxide layer. The epitaxial In 2 O 3 /InN heterojunctions show an increase in the electron concentration due to the increasing band banding at the heterointerface. The oxidation of InN results in improved transport properties and in a reduction of the sheet carrier concentration of the InN epilayer very likely caused by a passivation of surface donors. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Structure-Property Relationships in Amorphous Transparent Conducting Oxides

Science.gov (United States)

Moffitt, Stephanie Lucille

Over the last 20 years a new field of amorphous transparent conducting oxides (a-TCOs) has developed. The amorphous nature of these films makes them well suited for large area applications. In addition, a-TCOs can be made at low temperatures and through solution processing methods. These assets provide promising opportunities to improve applications such as solar cells and back-lit displays where traditional crystalline TCOs are used. In addition, it opens the door for new technological applications including the possibility for transparent, flexible electronics. Despite the recent growth in this field, fundamental understanding of the true nature of conductivity and the amorphous structure in this materials system is still progressing. To develop a greater understanding of a-TCOs, structure-property relationships were developed in the a-IGO and a-IZO systems. From the combination of element-specific local structure studies and liquid quench molecular dynamics simulations it is clear that a degree of structure remains in a-TCOs. By understanding this structure, the effect of gallium on thermal stability, carrier concentration and carrier mobility is understood. The source of charge carriers in a-IZO is identified as oxygen vacancies through the application of in situ Brouwer analysis. The continued development of the Brouwer analysis technique for use in amorphous oxides adds to the available methods for studying defects in amorphous systems. Finally, the foundational knowledge gained from the in-depth study of a-IGO was extended to understand the role of combustion processing and pulsed laser deposition as growth methods for transistors based on a-IGO.

Electronic Conductivity of Vanadium-Tellurite Glass-Ceramics

DEFF Research Database (Denmark)

Kjeldsen, Jonas; Yue, Yuanzheng; Bragatto, Caio B.

2013-01-01

In this paper, we investigate the electronic conductivity of 2TeO2-V2O5 glass-ceramics with crystallinity ranging from 0 to 100 wt.%, i.e., from entirely amorphous to completely crystalline. The glass is prepared by the melt quenching technique, and the crystal is prepared by subsequent heat...... spectroscopy. We find similar activation energies for both glass and crystal, implying that they have similar conduction mechanisms, i.e., thermally activated hopping. The electronic conductivity of 2TeO2-V2O5 glass is about one order of magnitude higher than that of the corresponding crystal......, and a percolation phenomenon occurs at a glass fraction of 61 wt.%, increasing from a lower conductivity in the crystal to a higher conductivity in the glass. We explain the behavior of electronic conduction in the 2TeO2-V2O5 glass-ceramics by considering constriction effects between particles as well...

Transparent and conductive polyethylene oxide film by the introduction of individualized single-walled carbon nanotubes.

Science.gov (United States)

Jung, Yong Chae; Muramatsu, Hiroyuki; Park, Ki Chul; Shimamoto, Daisuke; Kim, Jin Hee; Hayashi, Takuya; Song, Sung Moo; Kim, Yoong Ahm; Endo, Morinobu; Dresselhaus, Mildred S

2009-12-16

It is demonstrated that an optically transparent and electrically conductive polyethylene oxide (PEO) film is fabricated by the introduction of individualized single-walled carbon nanotubes (SWNTs). The incorporated SWNTs in the PEO film sustain their intrinsic electronic and optical properties and, in addition, the intrinsic properties of the polymer matrix are retained. The individualized SWNTs with smaller diameter provide high transmittance as well as good electrical conductivity in PEO films. Copyright © 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Dense ceramic membranes based on ion conducting oxides

International Nuclear Information System (INIS)

Fontaine, M.L.; Larring, Y.; Bredesen, R.; Norby, T.; Grande, T.

2007-01-01

This chapter reviews the recent progress made in the fields of high temperature oxygen and hydrogen separation membranes. Studies of membranes for oxygen separation are mainly focusing on materials design to improve flux, and to lesser extent, related to stability issues. High oxygen fluxes satisfying industrial requirements can be obtained but, for many materials, the surface exchange rate is limiting the performance. The current status on electrolyte-type and mixed proton and electron conducting membranes is outlined, highlighting materials with improved stability in typical applications as solid oxide fuel cell technology and gas separation. In our presentation more fundamental aspects related to transport properties, chemical and mechanical stability of membrane materials are also treated. It is concluded that a significantly better understanding of the long term effects of operation in chemical gradients is needed for these types of membrane materials. (authors)

2015 Progress Report/July 2016: Iron Oxide Redox Transformation Pathways: The Bulk Electrical Conduction Mechanism

Energy Technology Data Exchange (ETDEWEB)

Scherer, Michelle M. [Univ. of Iowa, Iowa City, IA (United States); Rosso, Kevin M. [Pacific Northwest National Lab. (PNNL), Richland, WA (United States)

2016-07-25

Despite decades of research on the reactivity and stable isotope properties of Fe oxides, the ability to describe the redox behavior of Fe oxides in the environment is still quite limited. This is due, in large part, to the analytical and spatial complexities associated with studying microscopic processes at the Fe oxide-water interface. This project had the long-term vision of filling this gap by developing a detailed understanding of the relationship between interfacial ET processes, surface structure and charge, and mineral semiconducting properties. We focused on the Fe(III)-oxides and oxyhydroxides because of their geochemical preponderance, versatility in synthesis of compositionally, structurally, and morphologically tailored phases, and because they are amenable to a wide range of surface and bulk properties characterization. In particular, reductive transformation of phases such as hematite (α-Fe₂O₃) and goethite (α-FeOOH) in aqueous solution can serve as excellent model systems for studies of electron conduction processes, as well as provide valuable insights into effect of nanoscale conductive materials on contaminant fate at DOE sites. More specifically, the goal of the Iowa component of this project was to use stable Fe isotope measurements to simultaneously measure isotope specific oxidation states and concentrations of Fe at the hematite-water and goethite-water interface. This work builds on our previous work where we used an innovative combination of ⁵⁷Fe Mössbauer spectroscopy and high precision isotope ratio measurements (MC-ICP-MS) to probe the dynamics of the reaction of aqueous Fe(II) with goethite. Mössbauer spectroscopy detects ⁵⁷Fe only among all other Fe isotopes and we have capitalized on this to spectroscopically demonstrate Fe(II)-Fe(III) electron transfer between sorbed Fe(II) and Fe(III) oxides (Handler, et al., 2009; Gorski, et al. 2010; Rosso et al., 2010). By combining the M�

Tuning the Electron Gas at an Oxide Heterointerface via Free Surface Charges

Energy Technology Data Exchange (ETDEWEB)

Bell, Christopher

2011-08-11

Oxide heterointerfaces are emerging as one of the most exciting materials systems in condensed matter science. One remarkable example is the LaAlO{sub 3}/SrTiO{sub 3} (LAO/STO) interface, a model system in which a highly mobile electron gas forms between two band insulators, exhibiting two dimensional superconductivity and unusual magnetotransport properties. An ideal tool to tune such an electron gas is the electrostatic field effect. In principle, the electrostatic field can be generated by bound charges due to polarization (as in the normal and ferroelectric field effects) or by adding excess free charge. In previous studies, a large modulation of the carrier density and mobility of the LAO/STO interface has been achieved using the normal field effect. However, little attention has been paid to the field effect generated by free charges. This issue is scarcely addressed, even in conventional semiconductor devices, since the free charges are typically not stable. Here, we demonstrate an unambiguous tuning of the LAO/STO interface conductivity via free surface charges written using conducting atomic force microscopy (AFM). The modulation of the carrier density was found to be reversible, nonvolatile and surprisingly large, {approx}3 x 10{sup 13} cm{sup -2}, comparable to the maximum modulation by the normal field effect. Our finding reveal the efficiency of free charges in controlling the conductivity of this oxide interface, and suggest that this technique may be extended more generally to other oxide systems.

Electron conductivity model for dense plasmas

International Nuclear Information System (INIS)

Lee, Y.T.; More, R.M.

1984-01-01

An electron conductivity model for dense plasmas is described which gives a consistent and complete set of transport coefficients including not only electrical conductivity and thermal conductivity, but also thermoelectric power, and Hall, Nernst, Ettinghausen, and Leduc--Righi coefficients. The model is useful for simulating plasma experiments with strong magnetic fields. The coefficients apply over a wide range of plasma temperature and density and are expressed in a computationally simple form. Different formulas are used for the electron relaxation time in plasma, liquid, and solid phases. Comparisons with recent calculations and available experimental measurement show the model gives results which are sufficiently accurate for many practical applications

Engineering Mixed Ionic Electronic Conduction in La 0.8 Sr 0.2 MnO 3+ δ Nanostructures through Fast Grain Boundary Oxygen Diffusivity

KAUST Repository

Saranya, Aruppukottai M.; Pla, Dolors; Morata, Alex; Cavallaro, Andrea; Canales-Vá zquez, Jesú s; Kilner, John A.; Burriel, Mó nica; Tarancó n, Albert

2015-01-01

to implement in nanostructures. Here, an artificial mixed ionic electronic conducting oxide is fabricated by grain boundary (GB) engineering thin films of La0.8Sr0.2MnO3+δ. This electronic conductor is converted into a good mixed ionic electronic conductor

Preparation and properties of highly conductive palmitic acid/graphene oxide composites as thermal energy storage materials

International Nuclear Information System (INIS)

Mehrali, Mohammad; Latibari, Sara Tahan; Mehrali, Mehdi; Indra Mahlia, Teuku Meurah; Cornelis Metselaar, Hendrik Simon

2013-01-01

PA/GO (palmitic acid/graphene oxide) as PCMs (phase change materials) prepared by vacuum impregnation method, have high thermal conductivity. The GO (graphene oxide) composite was used as supporting material to improve thermal conductivity and shape stabilization of composite PCM (phase change material). SEM (Scanning electronic microscope), FT-IR (Fourier transformation infrared spectroscope) and XRD (X-ray diffractometer) were applied to determine microstructure, chemical structure and crystalloid phase of palmitic acid/GO composites, respectively. DSC (Differential scanning calorimeter) test was done to investigate thermal properties which include melting and solidifying temperatures and latent heat. FT-IR analysis represented that the composite instruction of porous palmitic acid and GO were physical. The temperatures of melting, freezing and latent heats of the composite measured through DSC analysis were 60.45, 60.05 °C, 101.23 and 101.49 kJ/kg, respectively. Thermal cycling test showed that the form-stable composite PCM has good thermal reliability and chemical stability. Thermal conductivity of the composite PCM was improved by more than three times from 0.21 to 1.02. As a result, due to their acceptable thermal properties, good thermal reliability, chemical stability and great thermal conductivities, we can consider the prepared form-stable composites as highly conductive PCMs for thermal energy storage applications. - Highlights: • Novel composite PCM with high thermal conductivity and latent heat storage. • New thermal cycling test for thermal reliability of composite PCMs. • Increasing thermal conductivity of composite PCM with graphene oxide. • Increasing thermal stability of phase change material by adding graphene oxide

From chemolithoautotrophs to electrolithoautotrophs: CO2 fixation by Fe(II)-oxidizing bacteria coupled with direct uptake of electrons from solid electron sources.

Science.gov (United States)

Ishii, Takumi; Kawaichi, Satoshi; Nakagawa, Hirotaka; Hashimoto, Kazuhito; Nakamura, Ryuhei

2015-01-01

At deep-sea vent systems, hydrothermal emissions rich in reductive chemicals replace solar energy as fuels to support microbial carbon assimilation. Until recently, all the microbial components at vent systems have been assumed to be fostered by the primary production of chemolithoautotrophs; however, both the laboratory and on-site studies demonstrated electrical current generation at vent systems and have suggested that a portion of microbial carbon assimilation is stimulated by the direct uptake of electrons from electrically conductive minerals. Here we show that chemolithoautotrophic Fe(II)-oxidizing bacterium, Acidithiobacillus ferrooxidans, switches the electron source for carbon assimilation from diffusible Fe(2+) ions to an electrode under the condition that electrical current is the only source of energy and electrons. Site-specific marking of a cytochrome aa3 complex (aa3 complex) and a cytochrome bc1 complex (bc1 complex) in viable cells demonstrated that the electrons taken directly from an electrode are used for O2 reduction via a down-hill pathway, which generates proton motive force that is used for pushing the electrons to NAD(+) through a bc1 complex. Activation of carbon dioxide fixation by a direct electron uptake was also confirmed by the clear potential dependency of cell growth. These results reveal a previously unknown bioenergetic versatility of Fe(II)-oxidizing bacteria to use solid electron sources and will help with understanding carbon assimilation of microbial components living in electronically conductive chimney habitats.

Nanostructured Transparent Conducting Oxides for Device Applications

Science.gov (United States)

Dutta, Titas

2011-12-01

Research on transparent conducting oxides (TCOs) alternative to indium tin oxide (ITO) has attracted a lot of attention due to the serious concern related to cost and chemical stability of indium tin oxide. The primary aim of this research is to develop low cost alternative transparent conducting oxides with an eye towards (1) increasing the organic solar cell efficiency and (2) fabricating transparent electronic devices utilizing p-type TCOs. To investigate the fundamental properties, the novel TCO films have been grown on sapphire and economical glass substrates using pulsed laser deposition (PLD) technique. The films were also grown under different deposition conditions in order to understand the effect of processing parameters on the film properties. The characteristics of the thin films have been investigated in detail using (X-ray diffraction, TEM, X-ray photoelectron spectroscopy (XPS), UV- photoelectron spectroscopy (UPS), four probe resistivity and UV-Vis transmittance measurements) in order to establish processing-structure-property correlation. ZnO doped with group III elements is a promising candidate because of its superior stability in hydrogen environment, benign nature and relatively inexpensive supply. However, ZnO based TCO films suffer from low work function (4.4 eV, compared to that of 4.8 eV for ITO), which increases the energy barrier and affects the carrier transport across ZnGa0.05O/organic layer interface. To overcome this issue of ZnO based TCOs, the growth of bilayered structure consisting of very thin MoOx (2.0 target composition. These optimized bilayer films exhibited good optical transmittance (≥ 80%) and low resistivity of ˜ 10-4 O-cm. The optimized NiO1+x / GZO and MoOx / GZO bilayers showed significant increase in work function values (˜5.3 eV). The work function of the bilayer films was tuned by varying the processing conditions and doping of over layers. Preliminary test device results of the organic photovoltaic cells (OPVs

Paramagnetic resonance and electronic conduction in organic semiconductors

International Nuclear Information System (INIS)

Nechtschein, M.

1963-01-01

As some organic bodies simultaneously display semi-conducting properties and a paramagnetism, this report addresses the study of conduction in organic bodies. The author first briefly recalls how relationships between conductibility and Electron Paramagnetic Resonance (EPR) can be noticed in a specific case (mineral and metallic semiconductors). He discusses published results related to paramagnetism and conductibility in organic bodies. He reviews various categories of organic bodies in which both properties are simultaneously present. He notably addresses radical molecular crystals, non-radical molecular crystals, charge transfer complexes, pyrolyzed coals, and pseudo-ferromagnetic organic structures. He discusses the issue of relationships between conduction (charge transfer by electrons) and ERP (which reveals the existence of non-paired electrons which provide free spins)

Conducting metal oxide and metal nitride nanoparticles

Science.gov (United States)

DiSalvo, Jr., Francis J.; Subban, Chinmayee V.

2017-12-26

Conducting metal oxide and nitride nanoparticles that can be used in fuel cell applications. The metal oxide nanoparticles are comprised of for example, titanium, niobium, tantalum, tungsten and combinations thereof. The metal nitride nanoparticles are comprised of, for example, titanium, niobium, tantalum, tungsten, zirconium, and combinations thereof. The nanoparticles can be sintered to provide conducting porous agglomerates of the nanoparticles which can be used as a catalyst support in fuel cell applications. Further, platinum nanoparticles, for example, can be deposited on the agglomerates to provide a material that can be used as both an anode and a cathode catalyst support in a fuel cell.

Ionic Conductivity and its Role in Oxidation Reactions

Science.gov (United States)

Tamimi, Mazin Abdulla

In the field of solid oxide fuel cells (SOFCs), a substantial portion of research is focused on the ability of some oxide materials to conduct oxygen anions through their structure. For electrolytes, the benefits of improving bulk transport of ions are obvious: decrease the resistive losses of the electrolyte, and device efficiency goes up and higher power densities are possible. Even for cathode materials, better bulk ion transport leads to an increase in the oxygen exchange rate at the cathode surface, and the oxygen reduction reaction at the cathode surface is the rate limiting step for SOFC operation at intermediate temperatures (500-700ºC). As operation in this regime is a key step towards lowering the manufacturing cost and increasing the lifetime of devices, much effort is spent searching for new, more conductive materials, and analyzing existing materials to discover the structure-activity relationships that influence ionic conductivity. In the first part of this work, an overview is given of the neutron powder diffraction (NPD) techniques that are used to probe the structure of the materials in later parts. In the second part, NPD was used to analyze the structures of perovskite-type cathode materials, and show that increases in bulk conductivity led to increases in the surface oxygen exchange rate of these materials. In the final part, the methods used for SOFC cathode design were applied towards the design of oxide catalysts used for certain hydrocarbon partial oxidation reactions. The reactions studied follow the Mars van Krevelen mechanism, where oxygen atoms in the catalyst are consumed as part of the reaction and are subsequently replenished by oxygen in the gas phase. Similar to SOFC cathode operation, these processes include an oxygen reduction step, so it was hypothesized that increasing the ionic conductivity of the catalysts would improve their performance, just as it does for SOFC cathode materials. While the results are preliminary, the

Graphene oxide-loaded shortening as an environmentally friendly heat transfer fluid with high thermal conductivity

Directory of Open Access Journals (Sweden)

Vongsetskul Thammasit

2017-01-01

Full Text Available Graphene oxide-loaded shortening (GOS, an environmentally friendly heat transfer fluid with high thermal conductivity, was successfully prepared by mixing graphene oxide (GO with a shortening. Scanning electron microscopy revealed that GO particles, prepared by the modified Hummer’s method, dispersed well in the shortening. In addition, the latent heat of GOS decreased while their viscosity and thermal conductivity increased with increasing the amount of loaded GO. The thermal conductivity of the GOS with 4% GO was higher than that of pure shortening of ca. three times, from 0.1751 to 0.6022 W/mK, and increased with increasing temperature. The GOS started to be degraded at ca. 360°C. After being heated and cooled at 100°C for 100 cycles, its viscosity slightly decreased and no chemical degradation was observed. Therefore, the prepared GOS is potentially used as environmentally friendly heat transfer fluid at high temperature.

Pulsed laser deposition of transparent conductive oxide thin films on flexible substrates

International Nuclear Information System (INIS)

Socol, G.; Socol, M.; Stefan, N.; Axente, E.; Popescu-Pelin, G.; Craciun, D.; Duta, L.; Mihailescu, C.N.; Mihailescu, I.N.; Stanculescu, A.; Visan, D.; Sava, V.; Galca, A.C.; Luculescu, C.R.; Craciun, V.

2012-01-01

Highlights: ► TCO thin films were grown by PLD on PET substrate at low temperature. ► We found that the quality of TCO on PET substrate depends on the target–substrate distance. ► TCO with high transparency (>95%) and reduced electrical resistivity (∼5 × 10 −4 Ω cm) were obtained. ► Optimized TCO films deposited on PET were free of any cracks. - Abstract: The influence of target–substrate distance during pulsed laser deposition of indium zinc oxide (IZO), indium tin oxide (ITO) and aluminium-doped zinc oxide (AZO) thin films grown on polyethylene terephthalate (PET) substrates was investigated. It was found that the properties of such flexible transparent conductive oxide (TCO)/PET electrodes critically depend on this parameter. The TCO films that were deposited at distances of 6 and 8 cm exhibited an optical transmittance higher than 90% in the visible range and electrical resistivities around 5 × 10 −4 Ω cm. In addition to these excellent electrical and optical characteristics the films grown at 8 cm distance were homogenous, smooth, adherent, and without cracks or any other extended defects, being suitable for opto-electronic device applications.

Electronic structure and charge transport in nonstoichiometric tantalum oxide

Science.gov (United States)

Perevalov, T. V.; Gritsenko, V. A.; Gismatulin, A. A.; Voronkovskii, V. A.; Gerasimova, A. K.; Aliev, V. Sh; Prosvirin, I. A.

2018-06-01

The atomic and electronic structure of nonstoichiometric oxygen-deficient tantalum oxide TaO x<2.5 grown by ion beam sputtering deposition was studied. The TaO x film content was analyzed by x-ray photoelectron spectroscopy and by quantum-chemistry simulation. TaO x is composed of Ta2O5, metallic tantalum clusters and tantalum suboxides. A method for evaluating the stoichiometry parameter of TaO x from the comparison of experimental and theoretical photoelectron valence band spectra is proposed. The charge transport properties of TaO x were experimentally studied and the transport mechanism was quantitatively analyzed with four theoretical dielectric conductivity models. It was found that the charge transport in almost stoichiometric and nonstoichiometric tantalum oxide can be consistently described by the phonon-assisted tunneling between traps.

Using Electronic Mail to Conduct Survey Research.

Science.gov (United States)

Thach, Liz

1995-01-01

Describes public and private online networks and the characteristics of electronic mail. Reviews the literature on survey research conducted via electronic mail, and examines the issues of design, implementation, and response. A table displays advantages and disadvantages of electronic mail surveys. (AEF)

A 3D graphene interface (Si-doped) of Ag matrix with excellent electronic transmission and thermal conductivity via nano-assembly modification

Science.gov (United States)

Ye, Xianzhu; Li, Ming; Zhang, Yafei

2018-04-01

The wide development of electronic materials requires higher load capacity and high temperature resistance. In this study, a novel architecture was fabricated consisting of a 3D reduced graphene oxide (rGO)-Si interface using a simple nano-assembly sintering to achieve high current capacity and excellent thermal features. Via the analysis of catalytic oxidation for methanol, the loading catalytic activity of nano-Ag still remained to a certain extent for the composite with 0.8 vol.% rGO. The final Ag-rGO composite apparently possesses a higher initial oxidation temperature and lower rate of oxidation for internal passing and shielding, and the thermal conductivity is significantly enhanced from 344 to 407 W m‑1 K‑1. Importantly, with a 3D synergistic transportation network, the resistivity of the Ag-rGO composite is much lower than pure Ag, and with a longer conductive time under a stress condition of current density of 6.0  ×  104 A cm‑2. Thermal-electronic features demonstrate that the dispersed graphene interface can efficiently suppress the primary failure pathways (high temperature) in Ag matrix and make it uniquely efficient for the advancement of microscale and thermal-management electronics.

David Adler Lectureship Award in the Field of Materials Physics Talk: Novel Nitride and Oxide Electronics

Science.gov (United States)

Pearton, Stephen

2011-03-01

Recent progress in development of GaN-based transistors for gas and bio-sensing applications and amorphous IGZO layers for use thin film transistors (TFTs)on flexible substrates, including paper,will be presented. For the detection of gases such as hydrogen, the gateless GaN transistors are typically coated with a catalyst metal such as Pd or Pt to increase the detection sensitivity at room temperature. Functionalizing the surface with oxides, polymers and nitrides is also useful in enhancing the detection sensitivity for gases and ionic solutions.The use of enzymes or adsorbed antibody layers on the semiconductor surface leads to highly specific detection of a broad range of antigens of interest in the medical and security fields. We give examples of recent work showing sensitive detection of glucose, lactic acid, prostate cancer and breast cancer markers and the integration of the sensors with wireless data transmission systems to achieve robust, portable sensors. The amorphous transparent conducting oxide InZnGaO4 (IGZO) is attracting attention because of its high electron mobility (10-50 cm2.V-1.sec-1), high transparency in the visible region of the spectrum and its ability to be deposited with a wide range of conductivities.This raises the possibility of making low-cost electronics on a very wide range of arbitrary surfaces, including paper and plastics. N-type oxides such as zinc oxide, zinc tin oxide, indium gallium oxide, and indium gallium zinc tin oxide (IGZO) exhibit surprisingly high carrier mobilities even for amorphous films deposited at 300K. This has been explained by the fact that the conduction in these materials is predominantly through non-directional s orbitals which are less affected by disorder than the directional sp3 orbitals which control electron transport in Si. Examples of progress and discussion of remaining obstacles to use of IGZO TFTs will be presented Work performed in collaboration with Fan Ren.

Neoclassical electron heat conduction in tokamaks performed by the ions

International Nuclear Information System (INIS)

Ware, A.A.

1987-07-01

The increment to neoclassical ion heat conduction caused by electron collisions is shown to act like electron heat conduction since the energy is taken from and given back to the electrons at each diffusion step length. It can exceed electron neoclassical heat conduction by an order of magnitude

Electron-beam-induced conduction in polyethylene terephthalate films

Energy Technology Data Exchange (ETDEWEB)

Beckley, L M; Lewis, T J; Taylor, D M [University Coll. of North Wales, Bangor (UK). School of Electronic Engineering Science

1976-06-21

Measurements are reported of electron-beam-induced conduction in thin polyethylene terephthalate (PET) films for electron energies up to 10 keV. The ratio of induced dielectric current to incident beam current (the gain) is orders of magnitude less than unity over practically the whole range of beam penetration. This result is quite unlike that normally found for inorganic dielectrics where the gain will exceed unity and reach a maximum at or near full penetration. In spite of the very different gain characteristics it is shown that the model recently proposed by Nunes de Oliviera and Gross (J. App. Phys.; 46:3132 (1975)), and by Aris et al (IEE Conf. Publ. No.129.; 267 (1975) and J. Phys. C. Solid State Phys.; 9:797 (1976)) and applied to mica and tantalum oxide respectively is also applicable to PET. Use is made of the known carrier mobility and lifetime data for this polymer and it is shown that very large space-charge distortions of the field can be produced by the beam which may well account for the frequent sample failure experienced during the experiments. The work supports suggestions by earlier workers that the current in unirradiated PET is electrode limited and predicts the maximum (space-charge limited) current likely to occur in this polymer.

The electronic structure of co-sputtered zinc indium tin oxide thin films

Energy Technology Data Exchange (ETDEWEB)

Carreras, Paz; Antony, Aldrin; Bertomeu, Joan [Departament de Fisica Aplicada i Optica, Universitat de Barcelona, 08028 Barcelona (Spain); Gutmann, Sebastian [Department of Chemistry, University of South Florida, Tampa, Florida 33620 (United States); Schlaf, Rudy [Department of Electrical Engineering, University of South Florida, Tampa, Florida 33620 (United States)

2011-10-01

Zinc indium tin oxide (ZITO) transparent conductive oxide layers were deposited via radio frequency (RF) magnetron co-sputtering at room temperature. A series of samples with gradually varying zinc content was investigated. The samples were characterized with x-ray and ultraviolet photoemission spectroscopy (XPS, UPS) to determine the electronic structure of the surface. Valence and conduction bands maxima (VBM, CBM), and work function were determined. The experiments indicate that increasing Zn content results in films with a higher defect rate at the surface leading to the formation of a degenerately doped surface layer if the Zn content surpasses {approx}50%. Furthermore, the experiments demonstrate that ZITO is susceptible to ultraviolet light induced work function reduction, similar to what was earlier observed on ITO and TiO{sub 2} films.

Detecting Kondo Entanglement by Electron Conductance

Science.gov (United States)

Yoo, Gwangsu; Lee, S.-S. B.; Sim, H.-S.

2018-04-01

Quantum entanglement between an impurity spin and electrons nearby is a key property of the single-channel Kondo effects. We show that the entanglement can be detected by measuring electron conductance through a double quantum dot in an orbital Kondo regime. We derive a relation between the entanglement and the conductance, when the SU(2) spin symmetry of the regime is weakly broken. The relation reflects the universal form of many-body states near the Kondo fixed point. Using it, the spatial distribution of the entanglement—hence, the Kondo cloud—can be detected, with breaking of the symmetry spatially nonuniformly by electrical means.

Low-voltage protonic/electronic hybrid indium zinc oxide synaptic transistors on paper substrates

International Nuclear Information System (INIS)

Wu, Guodong; Wan, Changjin; Wan, Qing; Zhou, Jumei; Zhu, Liqiang

2014-01-01

Low-voltage (1.5 V) indium zinc oxide (IZO)-based electric-double-layer (EDL) thin-film transistors (TFTs) gated by nanogranular proton conducting SiO 2 electrolyte films are fabricated on paper substrates. Both enhancement-mode and depletion-mode operation are obtained by tuning the thickness of the IZO channel layer. Furthermore, such flexible IZO protonic/electronic hybrid EDL TFTs can be used as artificial synapses, and synaptic stimulation response and short-term synaptic plasticity function are demonstrated. The protonic/electronic hybrid EDL TFTs on paper substrates proposed here are promising for low-power flexible paper electronics, artificial synapses and bioelectronics. (paper)

Assembly and benign step-by-step post-treatment of oppositely charged reduced graphene oxides for transparent conductive thin films with multiple applications

Science.gov (United States)

Zhu, Jiayi; He, Junhui

2012-05-01

We report a new approach for the fabrication of flexible and transparent conducting thin films via the layer-by-layer (LbL) assembly of oppositely charged reduced graphene oxide (RGO) and the benign step-by-step post-treatment on substrates with a low glass-transition temperature, such as glass and poly(ethylene terephthalate) (PET). The RGO dispersions and films were characterized by means of atomic force microscopy, UV-visible absorption spectrophotometery, Raman spectroscopy, transmission electron microscopy, contact angle/interface systems and a four-point probe. It was found that the graphene thin films exhibited a significant increase in electrical conductivity after the step-by-step post-treatments. The graphene thin film on the PET substrate had a good conductivity retainability after multiple cycles (30 cycles) of excessively bending (bending angle: 180°), while tin-doped indium oxide (ITO) thin films on PET showed a significant decrease in electrical conductivity. In addition, the graphene thin film had a smooth surface with tunable wettability.We report a new approach for the fabrication of flexible and transparent conducting thin films via the layer-by-layer (LbL) assembly of oppositely charged reduced graphene oxide (RGO) and the benign step-by-step post-treatment on substrates with a low glass-transition temperature, such as glass and poly(ethylene terephthalate) (PET). The RGO dispersions and films were characterized by means of atomic force microscopy, UV-visible absorption spectrophotometery, Raman spectroscopy, transmission electron microscopy, contact angle/interface systems and a four-point probe. It was found that the graphene thin films exhibited a significant increase in electrical conductivity after the step-by-step post-treatments. The graphene thin film on the PET substrate had a good conductivity retainability after multiple cycles (30 cycles) of excessively bending (bending angle: 180°), while tin-doped indium oxide (ITO) thin films on

Hot-wire substoichiometric tungsten oxide films deposited in hydrogen environment with n-type conductivity

International Nuclear Information System (INIS)

Kostis, I; Vasilopoulou, M; Giannakopoulos, K; Papadimitropoulos, G; Davazoglou, D; Michalas, L; Papaioannou, G; Konofaos, N; Iliadis, A A; Kennou, S

2012-01-01

Substoichiometric tungsten oxide nanostructured films were synthesized by a hot-wire deposition technique in hydrogen-rich environment and characterized for their structural and electrical properties. A semiconducting behaviour was identified, allowing n-type conductivity even at room temperature which is an important result since it is well known that fully stoichiometric tungsten trioxide is nearly an insulator. Current-voltage characteristics for various temperatures were measured for tungsten oxide/Si heterostructures and analysed using proper modelling. As a result, the conduction mechanism inside the films was identified and found to be of a dual nature, with variable range hopping being dominant at near room temperatures. The saturation current was found to be thermally activated and the activation energy was calculated at 0.40 eV and the grain boundaries barrier at 150 meV. From Hall measurements it was also revealed that the dominant carriers are electrons and a carrier concentration of about 10 14 cm -3 was estimated.

Deep electron traps in HfO_2-based metal-oxide-semiconductor capacitors

International Nuclear Information System (INIS)

Salomone, L. Sambuco; Lipovetzky, J.; Carbonetto, S.H.; García Inza, M.A.; Redin, E.G.; Campabadal, F.

2016-01-01

Hafnium oxide (HfO_2) is currently considered to be a good candidate to take part as a component in charge-trapping nonvolatile memories. In this work, the electric field and time dependences of the electron trapping/detrapping processes are studied through a constant capacitance voltage transient technique on metal-oxide-semiconductor capacitors with atomic layer deposited HfO_2 as insulating layer. A tunneling-based model is proposed to reproduce the experimental results, obtaining fair agreement between experiments and simulations. From the fitting procedure, a band of defects is identified, located in the first 1.7 nm from the Si/HfO_2 interface at an energy level E_t = 1.59 eV below the HfO_2 conduction band edge with density N_t = 1.36 × 10"1"9 cm"−"3. A simplified analytical version of the model is proposed in order to ease the fitting procedure for the low applied voltage case considered in this work. - Highlights: • We characterized deep electron trapping/detrapping in HfO_2 structures. • We modeled the experimental results through a tunneling-based model. • We obtained an electron trap energy level of 1.59 eV below conduction band edge. • We obtained a spatial trap distribution extending 1.7 nm within the insulator. • A simplified tunneling front model is able to reproduce the experimental results.

Organic photovoltaic cell incorporating electron conducting exciton blocking layers

Science.gov (United States)

Forrest, Stephen R.; Lassiter, Brian E.

2014-08-26

The present disclosure relates to photosensitive optoelectronic devices including a compound blocking layer located between an acceptor material and a cathode, the compound blocking layer including: at least one electron conducting material, and at least one wide-gap electron conducting exciton blocking layer. For example, 3,4,9,10 perylenetetracarboxylic bisbenzimidazole (PTCBI) and 1,4,5,8-napthalene-tetracarboxylic-dianhydride (NTCDA) function as electron conducting and exciton blocking layers when interposed between the acceptor layer and cathode. Both materials serve as efficient electron conductors, leading to a fill factor as high as 0.70. By using an NTCDA/PTCBI compound blocking layer structure increased power conversion efficiency is achieved, compared to an analogous device using a conventional blocking layers shown to conduct electrons via damage-induced midgap states.

Conductive oxide cantilever for cryogenic nano-potentiometry

International Nuclear Information System (INIS)

Hiroya, Tsutomu; Inagaki, Katsuhiko; Tanda, Satoshi; Tsuneta, Taku; Yamaya, Kazuhiko

2003-01-01

Nanoscale electrical transport properties have attracted attentions because of new phenomena such as ballistic transport, quantized resistance, and Coulomb blockade. For measurement of nanoscale resistance, we have been developing a cryogenic atomic force microscope that can operate at 1.8 K. To use it as an electrode, we coated the cantilever with conductive oxides of TiO and indium tin oxide (ITO). We verified that TiO and ITO thin films remain conductive even at 4.2 K. Also we measured I-V characteristics of the tip-sample contact with a standard sample of NbSe 2 single crystal, and found that the conductive coats were not lost under large stresses due to the tip-sample contact. Moreover, we succeeded in obtaining a room temperature nano-potentiometry of a gold thin film with the ITO coated cantilever. In conclusion, the TiO and ITO coated cantilevers are applicable to cryogenic nano-potentiometry

Secondary electron emission characteristics of oxide electrodes in flat electron emission lamp

Directory of Open Access Journals (Sweden)

Chang-Lin Chiang

2016-01-01

Full Text Available The present study concerns with the secondary electron emission coefficient, γ, of the cathode materials used in the newly developed flat electron emission lamp (FEEL devices, which essentially integrates the concept of using cathode for fluorescent lamp and anode for cathode ray tube (CRT to obtain uniform planar lighting. Three different cathode materials, namely fluorine-doped tin oxide (FTO, aluminum oxide coated FTO (Al2O3/FTO and magnesium oxide coated FTO (MgO/FTO were prepared to investigate how the variations of γ and working gases influence the performance of FEEL devices, especially in lowering the breakdown voltage and pressure of the working gases. The results indicate that the MgO/FTO bilayer cathode exhibited a relatively larger effective secondary electron emission coefficient, resulting in significant reduction of breakdown voltage to about 3kV and allowing the device to be operated at the lower pressure to generate the higher lighting efficiency.

Secondary electron emission characteristics of oxide electrodes in flat electron emission lamp

Energy Technology Data Exchange (ETDEWEB)

Chiang, Chang-Lin, E-mail: CLChiang@itri.org.tw; Li, Chia-Hung [Green Energy and Environment Research Laboratories, Industrial Technology Research Institute, 195, Sec. 4, Chung Hsing Road, Chutung 310, Taiwan (China); Department of Electrophysics, National Chiao Tung University, 1001 Ta Hsueh Road, Hsinchu 300, Taiwan (China); Zeng, Hui-Kai [Department of Electronic Engineering, Chung Yuan Christian University, 200 Chung Pei Road, Chung Li 320, Taiwan (China); Li, Jung-Yu, E-mail: JY-Lee@itri.org.tw; Chen, Shih-Pu; Lin, Yi-Ping [Green Energy and Environment Research Laboratories, Industrial Technology Research Institute, 195, Sec. 4, Chung Hsing Road, Chutung 310, Taiwan (China); Hsieh, Tai-Chiung; Juang, Jenh-Yih, E-mail: jyjuang@cc.nctu.edu.tw [Department of Electrophysics, National Chiao Tung University, 1001 Ta Hsueh Road, Hsinchu 300, Taiwan (China)

2016-01-15

The present study concerns with the secondary electron emission coefficient, γ, of the cathode materials used in the newly developed flat electron emission lamp (FEEL) devices, which essentially integrates the concept of using cathode for fluorescent lamp and anode for cathode ray tube (CRT) to obtain uniform planar lighting. Three different cathode materials, namely fluorine-doped tin oxide (FTO), aluminum oxide coated FTO (Al{sub 2}O{sub 3}/FTO) and magnesium oxide coated FTO (MgO/FTO) were prepared to investigate how the variations of γ and working gases influence the performance of FEEL devices, especially in lowering the breakdown voltage and pressure of the working gases. The results indicate that the MgO/FTO bilayer cathode exhibited a relatively larger effective secondary electron emission coefficient, resulting in significant reduction of breakdown voltage to about 3kV and allowing the device to be operated at the lower pressure to generate the higher lighting efficiency.

Electrical conductivity of activated carbon-metal oxide nanocomposites under compression: a comparison study.

Science.gov (United States)

Barroso-Bogeat, A; Alexandre-Franco, M; Fernández-González, C; Macías-García, A; Gómez-Serrano, V

2014-12-07

From a granular commercial activated carbon (AC) and six metal oxide (Al2O3, Fe2O3, SnO2, TiO2, WO3 and ZnO) precursors, two series of AC-metal oxide nanocomposites were prepared by wet impregnation, oven-drying at 120 °C, and subsequent heat treatment at 200 or 850 °C in an inert atmosphere. Here, the electrical conductivity of the resulting products was studied under moderate compression. The influence of the applied pressure, sample volume, mechanical work, and density of the hybrid materials was thoroughly investigated. The DC electrical conductivity of the compressed samples was measured at room temperature by the four-probe method. Compaction assays suggest that the mechanical properties of the nanocomposites are largely determined by the carbon matrix. Both the decrease in volume and the increase in density were relatively small and only significant at pressures lower than 100 kPa for AC and most nanocomposites. In contrast, the bulk electrical conductivity of the hybrid materials was strongly influenced by the intrinsic conductivity, mean crystallite size, content and chemical nature of the supported phases, which ultimately depend on the metal oxide precursor and heat treatment temperature. The supported nanoparticles may be considered to act as electrical switches either hindering or favouring the effective electron transport between the AC cores of neighbouring composite particles in contact under compression. Conductivity values as a rule were lower for the nanocomposites than for the raw AC, all of them falling in the range of semiconductor materials. With the increase in heat treatment temperature, the trend is toward the improvement of conductivity due to the increase in the crystallite size and, in some cases, to the formation of metals in the elemental state and even metal carbides. The patterns of variation of the electrical conductivity with pressure and mechanical work were slightly similar, thus suggesting the predominance of the pressure

Ionic conductivity in new perovskite type oxides: NaAZrMO6 (A = Ca or Sr; M = Nb or Ta)

International Nuclear Information System (INIS)

Rajendran, Deepthi N.; Ravindran Nair, K.; Prabhakar Rao, P.; Sibi, K.S.; Koshy, Peter; Vaidyan, V.K.

2008-01-01

New oxides of the type, NaAZrMO 6 (M = Ca or Sr; M = Nb or Ta), have been prepared by the solid-state reaction technique. Phase identification by powder X-ray diffraction (XRD) shows that NaCaZrMO 6 has orthorhombic perovskite type structure (Pnma) and NaSrZrMO 6 has cubic perovskite type structure (Pm3m). The grain morphology observation by scanning electron microscope (SEM) shows well-sintered grains. ac impedance spectra and electrical conductivity measurements in air, oxygen and nitrogen atmospheres indicate that they are probable oxide ion conductors with ionic conductivities of the order of 10 -3 S cm -1 at 750 deg. C

Electron conductance in curved quantum structures

DEFF Research Database (Denmark)

Willatzen, Morten; Gravesen, Jens

2010-01-01

is computationally fast and provides direct (geometrical) parameter insight as regards the determination of the electron transmission coefficient. We present, as a case study, calculations of the electron conductivity of a helically shaped quantum-wire structure and discuss the influence of the quantum......A differential-geometry analysis is employed to investigate the transmission of electrons through a curved quantum-wire structure. Although the problem is a three-dimensional spatial problem, the Schrodinger equation can be separated into three general coordinates. Hence, the proposed method...

Deep vs shallow nature of oxygen vacancies and consequent n -type carrier concentrations in transparent conducting oxides

Science.gov (United States)

Buckeridge, J.; Catlow, C. R. A.; Farrow, M. R.; Logsdail, A. J.; Scanlon, D. O.; Keal, T. W.; Sherwood, P.; Woodley, S. M.; Sokol, A. A.; Walsh, A.

2018-05-01

The source of n -type conductivity in undoped transparent conducting oxides has been a topic of debate for several decades. The point defect of most interest in this respect is the oxygen vacancy, but there are many conflicting reports on the shallow versus deep nature of its related electronic states. Here, using a hybrid quantum mechanical/molecular mechanical embedded cluster approach, we have computed formation and ionization energies of oxygen vacancies in three representative transparent conducting oxides: In2O3 ,SnO2, and ZnO. We find that, in all three systems, oxygen vacancies form well-localized, compact donors. We demonstrate, however, that such compactness does not preclude the possibility of these states being shallow in nature, by considering the energetic balance between the vacancy binding electrons that are in localized orbitals or in effective-mass-like diffuse orbitals. Our results show that, thermodynamically, oxygen vacancies in bulk In2O3 introduce states above the conduction band minimum that contribute significantly to the observed conductivity properties of undoped samples. For ZnO and SnO2, the states are deep, and our calculated ionization energies agree well with thermochemical and optical experiments. Our computed equilibrium defect and carrier concentrations, however, demonstrate that these deep states may nevertheless lead to significant intrinsic n -type conductivity under reducing conditions at elevated temperatures. Our study indicates the importance of oxygen vacancies in relation to intrinsic carrier concentrations not only in In2O3 , but also in SnO2 and ZnO.

Titanium oxidation-reduction at low oxygen pressure under electron bombardment

International Nuclear Information System (INIS)

Brasca, R.; Passeggi, M.C.G.; Ferron, J.

2006-01-01

The effect of the electron bombardment on the first stages of the titanium oxidation process has been studied by means of Auger Electron Spectroscopy. Using Factor Analysis and the valence electron dependence behaviour of the titanium LMV Auger transition, we found that the process is strongly dependent on the oxygen pressure and electron current density. Depending on the irradiation conditions, films of different thickness and Ti oxidized states are obtained

A novel method for qualitative analysis of edible oil oxidation using an electronic nose.

Science.gov (United States)

Xu, Lirong; Yu, Xiuzhu; Liu, Lei; Zhang, Rui

2016-07-01

An electronic nose (E-nose) was used for rapid assessment of the degree of oxidation in edible oils. Peroxide and acid values of edible oil samples were analyzed using data obtained by the American Oil Chemists' Society (AOCS) Official Method for reference. Qualitative discrimination between non-oxidized and oxidized oils was conducted using the E-nose technique developed in combination with cluster analysis (CA), principal component analysis (PCA), and linear discriminant analysis (LDA). The results from CA, PCA and LDA indicated that the E-nose technique could be used for differentiation of non-oxidized and oxidized oils. LDA produced slightly better results than CA and PCA. The proposed approach can be used as an alternative to AOCS Official Method as an innovative tool for rapid detection of edible oil oxidation. Copyright © 2016 Elsevier Ltd. All rights reserved.

Gamma- and electron dose response of the electrical conductivity of polyaniline based polymer blends

International Nuclear Information System (INIS)

Sevil, U.A.; Gueven, O.; Slezsak, I.

2002-01-01

Complete text of publication follows. Conducting polymers, also known as 'synthetic metals' have been the subject of widespread investigations over the past decade due to their very promising characteristics. Polyaniline (PANI) holds a special position among conducting polymers in that its most highly conducting doped form can be reached by protonic acid doping or oxidative doping. It was published earlier, that the electrical conductivity of some polyaniline based polymer composites increases to a significant extent when irradiated to gamma, electron or UV radiation. The aim of the present study was to measure the high frequency conductivity of blended films of PANI with poly(vinylchloride), PVC, and chlorinated poly(propylene) irradiated in air to different doses. In order to find the most suitable composition od these composites the mass percentage of PANI within the PPCl and PVC matrix was changed between 5 - 30%. These samples were then gamma irradiated and the induced electrical conductivity was measured in the 1 kHz - 1 MHz frequency range to determine the most sensitive evaluation conditions. After selecting both the most suitable measuring conditions as well as the blend compositions the dose response of the chosen samples was determined in the dose range of 10 - 250 kGy. With respect to potential dosimetry application the effect of electron irradiation, the effect of irradiation temperature and the stability of the irradiated samples have also been investigated

Correlation between resistance-change effect in transition-metal oxides and secondary-electron contrast of scanning electron microscope images

International Nuclear Information System (INIS)

Kinoshita, K.; Kishida, S.; Yoda, T.

2011-01-01

Conductive atomic-force microscopy (C-AFM) writing is attracting attention as a technique for clarifying the switching mechanism of resistive random-access memory by providing a wide area filled with filaments, which can be regarded as one filament with large radius. The writing area on a nickel-oxide (NiO) film formed by conductive atomic-force microscopy was observed by scanning electron microscope, and a correlation between the contrast in a secondary-electron image (SEI) and the resistance written by C-AFM was revealed. In addition, the dependence of the SEI contrast on the beam accelerating voltage (V accel ) suggests that the resistance-change effect occurs near the surface of the NiO film. As for the effects of electron irradiation and vacuum annealing on the C-AFM writing area, it was shown that the resistance-change effect is caused by exchange of oxygen with the atmosphere at the surface of the NiO film. This result suggests that the low-resistance and high-resistance areas are, respectively, p-type Ni 1+δ O (δ 1+δ O (δ≥ 0).

Nanostructuring the electronic conducting La0.8Sr0.2MnO3-δ cathode for high-performance in proton-conducting solid oxide fuel cells below 600°C

KAUST Repository

Da’ as, Eman Husni; Bi, Lei; Boulfrad, Samir; Traversa, Enrico

2017-01-01

Proton-conducting oxides offer a promising electrolyte solution for intermediate temperature solid oxide fuel cells (SOFCs) due to their high conductivity and low activation energy. However, the lower operation temperature leads to a reduced cathode activity and thus a poorer fuel cell performance. La0.8Sr0.2MnO3-δ (LSM) is the classical cathode material for high-temperature SOFCs, which lack features as a proper SOFC cathode material at intermediate temperatures. Despite this, we here successfully couple nanostructured LSM cathode with proton-conducting electrolytes to operate below 600°C with desirable SOFC performance. Inkjet printing allows depositing nanostructured particles of LSM on Y-doped BaZrO3(BZY) backbones as cathodes for proton-conducting SOFCs, which provides one of the highest power output for the BZY-based fuel cells below 600°C. This somehow changes the common knowledge that LSM can be applied as a SOFC cathode materials only at high temperatures (above 700°C).

Nanostructuring the electronic conducting La0.8Sr0.2MnO3-δ cathode for high-performance in proton-conducting solid oxide fuel cells below 600°C

KAUST Repository

Da’as, Eman Husni

2017-10-28

Proton-conducting oxides offer a promising electrolyte solution for intermediate temperature solid oxide fuel cells (SOFCs) due to their high conductivity and low activation energy. However, the lower operation temperature leads to a reduced cathode activity and thus a poorer fuel cell performance. La0.8Sr0.2MnO3-δ (LSM) is the classical cathode material for high-temperature SOFCs, which lack features as a proper SOFC cathode material at intermediate temperatures. Despite this, we here successfully couple nanostructured LSM cathode with proton-conducting electrolytes to operate below 600°C with desirable SOFC performance. Inkjet printing allows depositing nanostructured particles of LSM on Y-doped BaZrO3(BZY) backbones as cathodes for proton-conducting SOFCs, which provides one of the highest power output for the BZY-based fuel cells below 600°C. This somehow changes the common knowledge that LSM can be applied as a SOFC cathode materials only at high temperatures (above 700°C).

Electron transfer oxidation of DNA radicals by paranitroacetophenone

Energy Technology Data Exchange (ETDEWEB)

Whillans, D W; Adams, G E [Mount Vernon Hospital, Northwood (UK)

1975-12-01

The reaction of a typical electron-affinic sensitizer, paranitroacetophenone (PNAP) with the model compounds thymine, thymidine, thymidylic acid, deoxyribose and single and double-stranded DNA has been investigated by pulse radiolysis. Radicals formed by one-electron reduction of the bases and of DNA reacted rapidly and efficiently with PNAP by electron transfer. A small yield of transfer (< 10 per cent) was also observed arising from oxidation of the radicals formed by the small proportion of OH which reacted at the sugar moieties in DNA. In contrast, electron transfer oxidation by PNAP of radicals formed by the addition of OH to the base moieties, e.g. thymine, was not an efficient process. Further, addition of the sensitizer to the thymine OH-adduct proceeded at a rate that was too low to measure the pulse radiolysis. We conclude that, since the major sites of OH reaction by DNA are the heterocyclic bases (> 80 per cent), oxidation of the resultant radicals is unlikely to be a major step in the mechanism of sensitization by this typical hypoxic-cell sensitizer.

Transmission Electron Microscopy Studies of Electron-Selective Titanium Oxide Contacts in Silicon Solar Cells

KAUST Repository

Ali, Haider

2017-08-15

In this study, the cross-section of electron-selective titanium oxide (TiO2) contacts for n-type crystalline silicon solar cells were investigated by transmission electron microscopy. It was revealed that the excellent cell efficiency of 21.6% obtained on n-type cells, featuring SiO2/TiO2/Al rear contacts and after forming gas annealing (FGA) at 350°C, is due to strong surface passivation of SiO2/TiO2 stack as well as low contact resistivity at the Si/SiO2/TiO2 heterojunction. This can be attributed to the transformation of amorphous TiO2 to a conducting TiO2-x phase. Conversely, the low efficiency (9.8%) obtained on cells featuring an a-Si:H/TiO2/Al rear contact is due to severe degradation of passivation of the a-Si:H upon FGA.

The special features of the crystal structure and properties of oxides with mixed conductivity based on lanthanum gallate

Science.gov (United States)

Politova, E. D.; Ivanov, S. A.; Kaleva, G. M.; Mosunov, A. V.; Rusakov, V. S.

2008-10-01

The paper presents a review of works on the synthesis, structural composition effects, phase transitions, and electrical conductivity properties of multicomponent solid solutions based on heterosubstituted lanthanum gallate (La,A)(Ga,M)O3 - y . High-temperature phase transitions and structural and charge ordering effects were studied. The presence of iron cations in different valence states was proved; the relative contents of these cations depended on the x parameter and nonstoichiometry parameter y of the base composition. For M = Fe, antiferromagnetic ordering was observed; its temperature interval was determined by the concentration of iron cations in the high-spin state. The total conductivity was found to increase as the concentration of transition metal cations grew because of an increase in the electronic conductivity component. The data on structural parameters and dc and ac conductivity substantiated the conclusion that the highest ionic conductivity and permeability to oxygen were characteristic of iron-containing oxides. The results obtained are evidence that crystal chemical factors play a determining role in the formation of the ion-conducting properties of anion-deficient perovskite-like oxides.

Highly n-Type Titanium Oxide as an Electronically Active Support for Platinum in the Catalytic Oxidation of Carbon Monoxide

KAUST Repository

Baker, L. Robert

2011-08-18

The role of the oxide-metal interface in determining the activity and selectivity of chemical reactions catalyzed by metal particles on an oxide support is an important topic in science and industry. A proposed mechanism for this strong metal-support interaction is electronic activation of surface adsorbates by charge carriers. Motivated by the goal of using electronic activation to drive nonthermal chemistry, we investigated the ability of the oxide support to mediate charge transfer. We report an approximately 2-fold increase in the turnover rate of catalytic carbon monoxide oxidation on platinum nanoparticles supported on stoichiometric titanium dioxide (TiO2) when the TiO2 is made highly n-type by fluorine (F) doping. However, for nonstoichiometric titanium oxide (TiOX<2) the effect of F on the turnover rate is negligible. Studies of the titanium oxide electronic structure show that the energy of free electrons in the oxide determines the rate of reaction. These results suggest that highly n-type TiO2 electronically activates adsorbed oxygen (O) by electron spillover to form an active O- intermediate. © 2011 American Chemical Society.

Nanoscale patterning of electronic devices at the amorphous LaAlO3/SrTiO3 oxide interface using an electron sensitive polymer mask

DEFF Research Database (Denmark)

Bjorlig, Anders V.; von Soosten, Merlin; Erlandsen, Ricci

2018-01-01

A simple approach is presented for designing complex oxide mesoscopic electronic devices based on the conducting interfaces of room temperature grown LaAlO3/SrTiO3 heterostructures. The technique is based entirely on methods known from conventional semiconductor processing technology, and we demo...

Tungsten oxide proton conducting films for low-voltage transparent oxide-based thin-film transistors

International Nuclear Information System (INIS)

Zhang, Hongliang; Wan, Qing; Wan, Changjin; Wu, Guodong; Zhu, Liqiang

2013-01-01

Tungsten oxide (WO x ) electrolyte films deposited by reactive magnetron sputtering showed a high room temperature proton conductivity of 1.38 × 10 −4 S/cm with a relative humidity of 60%. Low-voltage transparent W-doped indium-zinc-oxide thin-film transistors gated by WO x -based electrolytes were self-assembled on glass substrates by one mask diffraction method. Enhancement mode operation with a large current on/off ratio of 4.7 × 10 6 , a low subthreshold swing of 108 mV/decade, and a high field-effect mobility 42.6 cm 2 /V s was realized. Our results demonstrated that WO x -based proton conducting films were promising gate dielectric candidates for portable low-voltage oxide-based devices.

Nanoroses of nickel oxides: Synthesis, electron tomography study, and application in CO oxidation and energy storage

KAUST Repository

Fihri, Aziz; Sougrat, Rachid; Baby, Rakhi Raghavan; Rahal, Raed; Cha, Dong Kyu; Hedhili, Mohamed N.; Bouhrara, Mohamed; Alshareef, Husam N.; Polshettiwar, Vivek

2012-01-01

Nickel oxide and mixed-metal oxide structures were fabricated by using microwave irradiation in pure water. The nickel oxide self-assembled into unique rose-shaped nanostructures. These nickel oxide roses were studied by performing electron

Electronic structure of the high-temperature oxide superconductors

International Nuclear Information System (INIS)

Pickett, W.E.

1989-01-01

Since the discovery of superconductivity above 30 K by Bednorz and Mueller in the La copper oxide system, the critical temperature has been raised to 90 K in YBa 2 Cu 3 O 7 and to 110 and 125 K in Bi-based and Tl-based copper oxides, respectively. In the two years since this Nobel-prize-winning discovery, a large number of electronic structure calculations have been carried out as a first step in understanding the electronic properties of these materials. In this paper these calculations (mostly of the density-functional type) are gathered and reviewed, and their results are compared with the relevant experimental data. The picture that emerges is one in which the important electronic states are dominated by the copper d and oxygen p orbitals, with strong hybridization between them. Photon, electron, and positron spectroscopies provide important information about the electronic states, and comparison with electronic structure calculations indicates that, while many features can be interpreted in terms of existing calculations, self-energy corrections (''correlations'') are important for a more detailed understanding. The antiferromagnetism that occurs in some regions of the phase diagram poses a particularly challenging problem for any detailed theory. The study of structural stability, lattice dynamics, and electron-phonon coupling in the copper oxides is also discussed. Finally, a brief review is given of the attempts so far to identify interaction constants appropriate for a model Hamiltonian treatment of many-body interactions in these materials

Surface and Core Electronic Structure of Oxidized Silicon Nanocrystals

Directory of Open Access Journals (Sweden)

Noor A. Nama

2010-01-01

Full Text Available Ab initio restricted Hartree-Fock method within the framework of large unit cell formalism is used to simulate silicon nanocrystals between 216 and 1000 atoms (1.6–2.65 nm in diameter that include Bravais and primitive cell multiples. The investigated properties include core and oxidized surface properties. Results revealed that electronic properties converge to some limit as the size of the nanocrystal increases. Increasing the size of the core of a nanocrystal resulted in an increase of the energy gap, valence band width, and cohesive energy. The lattice constant of the core and oxidized surface parts shows a decreasing trend as the nanocrystal increases in a size that converges to 5.28 Ǻ in a good agreement with the experiment. Surface and core convergence to the same lattice constant reflects good adherence of oxide layer at the surface. The core density of states shows highly degenerate states that split at the oxygenated (001-(1×1 surface due to symmetry breaking. The nanocrystal surface shows smaller gap and higher valence and conduction bands when compared to the core part, due to oxygen surface atoms and reduced structural symmetry. The smaller surface energy gap shows that energy gap of the nanocrystal is controlled by the surface part. Unlike the core part, the surface part shows a descending energy gap that proves its obedience to quantum confinement effects. Nanocrystal geometry proved to have some influence on all electronic properties including the energy gap.

Atomic layer deposition of Al{sub 2}O{sub 3} for single electron transistors utilizing Pt oxidation and reduction

Energy Technology Data Exchange (ETDEWEB)

McConnell, Michael S., E-mail: mmcconn5@nd.edu; Schneider, Louisa C.; Karbasian, Golnaz; Rouvimov, Sergei; Orlov, Alexei O.; Snider, Gregory L. [Department of Electrical Engineering, University of Notre Dame, 275 Fitzpatrick Hall, Notre Dame, Indiana 46556 (United States)

2016-01-15

This work describes the fabrication of single electron transistors using electron beam lithography and atomic layer deposition to form nanoscale tunnel transparent junctions of alumina (Al{sub 2}O{sub 3}) on platinum nanowires using either water or ozone as the oxygen precursor and trimethylaluminum as the aluminum precursor. Using room temperature, low frequency conductance measurements between the source and drain, it was found that devices fabricated using water had higher conductance than devices fabricated with ozone. Subsequent annealing caused both water- and ozone-based devices to increase in conductance by more than 2 orders of magnitude. Furthermore, comparison of devices at low temperatures (∼4 K) showed that annealed devices displayed much closer to the ideal behavior (i.e., constant differential conductance) outside of the Coulomb blockade region and that untreated devices showed nonlinear behavior outside of the Coulomb blockade region (i.e., an increase in differential conductance with source-drain voltage bias). Transmission electron microscopy cross-sectional images showed that annealing did not significantly change device geometry, but energy dispersive x-ray spectroscopy showed an unusually large amount of oxygen in the bottom platinum layer. This suggests that the atomic layer deposition process results in the formation of a thin platinum surface oxide, which either decomposes or is reduced during the anneal step, resulting in a tunnel barrier without the in-series native oxide contribution. Furthermore, the difference between ozone- and water-based devices suggests that ozone promotes atomic layer deposition nucleation by oxidizing the surface but that water relies on physisorption of the precursors. To test this theory, devices were exposed to forming gas at room temperature, which also reduces platinum oxide, and a decrease in resistance was observed, as expected.

Factors controlling the oxide ion conductivity of fluorite and perovskite structured oxides

DEFF Research Database (Denmark)

Mogensen, Mogens Bjerg; Lybye, D.; Bonanos, N.

2004-01-01

Many metal oxides of fluorite and perovskite related structures are oxide ion conductors, which have practical applications in devices such as oxygen sensors, solid oxide fuel cells (SOFC) and electrolysers. Several structural and thermodynamic parameters such as (1) critical radius of the pathway...... such parameters for fluorite and perovskite oxides by considering their sensitivities to the individual ionic radii. Based on experimental data available in the literature, it is argued that lattice distortion (lattice stress and deviation from cubic symmetry) due to ion radii mismatch determines the ionic...... conductivity to a very large extent, and that lattice distortion is of much greater importance than many other proposed parameters. In case of the perovskites, the charge of the B-site ion is also of major importance. (C) 2004 Published by Elsevier B.V....

Conductivity in redox modified conducting polymers. In-situ conductivity of poly(cyclopentadithiophenes) bearing p-nitrophenyl and 4-N-methylpyridinium groups

Energy Technology Data Exchange (ETDEWEB)

Zotti, G. [Consiglio Nazionale delle Ricerche, (Italy). Istituto di Polarografia ed Elettrochimica Preparativa; Berlin, A. [Milan Univ. (Italy). Dipartimento di Chimica Organica e Industriale; Pagani, G. [Milan Univ. (Italy). Dipartimento di Chimica Organica e Industriale; Schiavon, G. [Consiglio Nazionale delle Ricerche, (Italy). Istituto di Polarografia ed Elettrochimica Preparativa; Zecchin, S. [Consiglio Nazionale delle Ricerche, (Italy). Istituto di Polarografia ed Elettrochimica Preparativa

1995-01-01

Redox-modified polythiophenes exhibiting the highest mixed-valence conductivities of any polymer containing a pendant redox group are reported. The ordering of the polymer, in which the backbone has been oxidized to a bipolaron conducting state and the redox sites have been reduced to a mixed-valence conducting state, encourages inter-site hopping and results in the high conductivities. Electron interactions are shown not have an influence on the conduction. (orig.)

Iodine doping effects on the lattice thermal conductivity of oxidized polyacetylene nanofibers

Energy Technology Data Exchange (ETDEWEB)

Bi, Kedong, E-mail: lishi@mail.utexas.edu, E-mail: kedongbi@seu.edu.cn [Jiangsu Key Laboratory for Design and Manufacture of Micro-Nano Biomedical Instruments, School of Mechanical Engineering, Southeast University, Nanjing 211189 (China); Department of Mechanical Engineering, University of Texas at Austin, Austin, Texas 78712 (United States); Weathers, Annie; Pettes, Michael T.; Shi, Li, E-mail: lishi@mail.utexas.edu, E-mail: kedongbi@seu.edu.cn [Department of Mechanical Engineering, University of Texas at Austin, Austin, Texas 78712 (United States); Matsushita, Satoshi; Akagi, Kazuo [Department of Polymer Chemistry, Kyoto University, Kyoto 615-8510 (Japan); Goh, Munju [Department of Polymer Chemistry, Kyoto University, Kyoto 615-8510 (Japan); Institute of Advanced Composite Materials, Korea Institute of Science and Technology (KIST), Eunha-ri san 101, Bondong-eup, Wanju-gun, Jeolabuk-do 565-905 (Korea, Republic of)

2013-11-21

Thermal transport in oxidized polyacetylene (PA) nanofibers with diameters in the range between 74 and 126 nm is measured with the use of a suspended micro heater device. With the error due to both radiation and contact thermal resistance corrected via a differential measurement procedure, the obtained thermal conductivity of oxidized PA nanofibers varies in the range between 0.84 and 1.24 W m{sup −1} K{sup −1} near room temperature, and decreases by 40%–70% after iodine doping. It is also found that the thermal conductivity of oxidized PA nanofibers increases with temperature between 100 and 350 K. Because of exposure to oxygen during sample preparation, the PA nanofibers are oxidized to be electrically insulating before and after iodine doping. The measurement results reveal that iodine doping can result in enhanced lattice disorder and reduced lattice thermal conductivity of PA nanofibers. If the oxidation issue can be addressed via further research to increase the electrical conductivity via doping, the observed suppressed lattice thermal conductivity in doped polymer nanofibers can be useful for the development of such conducting polymer nanostructures for thermoelectric energy conversion.

Iodine doping effects on the lattice thermal conductivity of oxidized polyacetylene nanofibers

International Nuclear Information System (INIS)

Bi, Kedong; Weathers, Annie; Pettes, Michael T.; Shi, Li; Matsushita, Satoshi; Akagi, Kazuo; Goh, Munju

2013-01-01

Thermal transport in oxidized polyacetylene (PA) nanofibers with diameters in the range between 74 and 126 nm is measured with the use of a suspended micro heater device. With the error due to both radiation and contact thermal resistance corrected via a differential measurement procedure, the obtained thermal conductivity of oxidized PA nanofibers varies in the range between 0.84 and 1.24 W m −1  K −1 near room temperature, and decreases by 40%–70% after iodine doping. It is also found that the thermal conductivity of oxidized PA nanofibers increases with temperature between 100 and 350 K. Because of exposure to oxygen during sample preparation, the PA nanofibers are oxidized to be electrically insulating before and after iodine doping. The measurement results reveal that iodine doping can result in enhanced lattice disorder and reduced lattice thermal conductivity of PA nanofibers. If the oxidation issue can be addressed via further research to increase the electrical conductivity via doping, the observed suppressed lattice thermal conductivity in doped polymer nanofibers can be useful for the development of such conducting polymer nanostructures for thermoelectric energy conversion

Investigation of defects in In–Ga–Zn oxide thin film using electron spin resonance signals

International Nuclear Information System (INIS)

Nonaka, Yusuke; Kurosawa, Yoichi; Komatsu, Yoshihiro; Ishihara, Noritaka; Oota, Masashi; Nakashima, Motoki; Hirohashi, Takuya; Takahashi, Masahiro; Yamazaki, Shunpei; Obonai, Toshimitsu; Hosaka, Yasuharu; Koezuka, Junichi; Yamauchi, Jun

2014-01-01

In–Ga–Zn oxide (IGZO) is a next-generation semiconductor material seen as an alternative to silicon. Despite the importance of the controllability of characteristics and the reliability of devices, defects in IGZO have not been fully understood. We investigated defects in IGZO thin films using electron spin resonance (ESR) spectroscopy. In as-sputtered IGZO thin films, we observed an ESR signal which had a g-value of g = 2.010, and the signal was found to disappear under thermal treatment. Annealing in a reductive atmosphere, such as N 2 atmosphere, generated an ESR signal with g = 1.932 in IGZO thin films. The temperature dependence of the latter signal suggests that the signal is induced by delocalized unpaired electrons (i.e., conduction electrons). In fact, a comparison between the conductivity and ESR signal intensity revealed that the signal's intensity is related to the number of conduction electrons in the IGZO thin film. The signal's intensity did not increase with oxygen vacancy alone but also with increases in both oxygen vacancy and hydrogen concentration. In addition, first-principle calculation suggests that the conduction electrons in IGZO may be generated by defects that occur when hydrogen atoms are inserted into oxygen vacancies

Investigation of defects in In–Ga–Zn oxide thin film using electron spin resonance signals

Energy Technology Data Exchange (ETDEWEB)

Nonaka, Yusuke; Kurosawa, Yoichi; Komatsu, Yoshihiro; Ishihara, Noritaka; Oota, Masashi; Nakashima, Motoki; Hirohashi, Takuya; Takahashi, Masahiro; Yamazaki, Shunpei [Semiconductor Energy Laboratory Co., Ltd., 398 Hase, Atsugi, Kanagawa 243-0036 (Japan); Obonai, Toshimitsu; Hosaka, Yasuharu; Koezuka, Junichi [Advanced Film Device, Inc., 161-2 Masuzuka, Tsuga-machi, Tochigi, Tochigi 328-0114 (Japan); Yamauchi, Jun [Semiconductor Energy Laboratory Co., Ltd., 398 Hase, Atsugi, Kanagawa 243-0036 (Japan); Emeritus Professor of Kyoto University, Oiwake-cho, Kitashirakawa, Kyoto 606-8502 (Japan)

2014-04-28

In–Ga–Zn oxide (IGZO) is a next-generation semiconductor material seen as an alternative to silicon. Despite the importance of the controllability of characteristics and the reliability of devices, defects in IGZO have not been fully understood. We investigated defects in IGZO thin films using electron spin resonance (ESR) spectroscopy. In as-sputtered IGZO thin films, we observed an ESR signal which had a g-value of g = 2.010, and the signal was found to disappear under thermal treatment. Annealing in a reductive atmosphere, such as N{sub 2} atmosphere, generated an ESR signal with g = 1.932 in IGZO thin films. The temperature dependence of the latter signal suggests that the signal is induced by delocalized unpaired electrons (i.e., conduction electrons). In fact, a comparison between the conductivity and ESR signal intensity revealed that the signal's intensity is related to the number of conduction electrons in the IGZO thin film. The signal's intensity did not increase with oxygen vacancy alone but also with increases in both oxygen vacancy and hydrogen concentration. In addition, first-principle calculation suggests that the conduction electrons in IGZO may be generated by defects that occur when hydrogen atoms are inserted into oxygen vacancies.

Mechanisms of electrical conductivity in olivine

International Nuclear Information System (INIS)

Schock, R.N.; Duba, A.G.; Shankland, T.J.

1984-01-01

Data on the electrical conductivity and the thermoelectric effect in single crystals indicate that the charge conduction mechanism in pure magnesium forsterite is electrons. The concentration of electrons can be varied by controlling the number of oxygen vacancies through manipulation of the oxygen pressure. For iron bearing olivine, the conduction mechanism is by electron holes localized on an iron ion. Since iron strongly affects the creep process as well, oxidation of iron is probably accompanied by the production of magnesium vacancies. 15 references

Radiative shocks with electron thermal conduction

International Nuclear Information System (INIS)

Borkowski, Kazimierz.

1988-01-01

The authors studies the influence of electron thermal conduction on radiative shock structure for both one- and two-temperature plasmas. The dimensionless ratio of the conductive length to the cooling length determines whether or not conduction is important, and shock jump conditions with conduction are established for a collisionless shock front. He obtains approximate solutions with the assumptions that the ionization state of the gas is constant and the cooling rate is a function of temperature alone. In the absence of magnetic fields, these solutions indicate that conduction noticeably influences normal-abundance interstellar shocks with velocities 50-100 km s -1 and dramatically affects metal-dominated shocks over a wide range of shock velocities. Magnetic fields inhibit conduction, but the conductive energy flux and the corresponding decrease in the post-shock electron temperature may still be appreciable. He calculates detailed steady-state radiative shock models in gas composed entirely of oxygen, with the purpose of explaining observations of fast-moving knots in Cas A and other oxygen-rich supernova remnants (SNRs). The O III ion, whose forbidden emission usually dominates the observed spectra, is present over a wide range of shock velocities, from 100 to 170 kms -1 . All models with conduction have extensive warm photoionization zones, which provides better agreement with observed optical (O I) line strengths. However, the temperatures in these zones could be lowered by (Si II) 34.8 μm and (Ne II) 12.8 μm cooling if Si and Ne are present in appreciable abundance relative to O. Such low temperatures would be inconsistent with the observed (O I) emission in oxygen-rich SNRs

Metal oxide semiconductor thin-film transistors for flexible electronics

Energy Technology Data Exchange (ETDEWEB)

Petti, Luisa; Vogt, Christian; Büthe, Lars; Cantarella, Giuseppe; Tröster, Gerhard [Electronics Laboratory, Swiss Federal Institute of Technology, Zürich (Switzerland); Münzenrieder, Niko [Electronics Laboratory, Swiss Federal Institute of Technology, Zürich (Switzerland); Sensor Technology Research Centre, University of Sussex, Falmer (United Kingdom); Faber, Hendrik; Bottacchi, Francesca; Anthopoulos, Thomas D. [Department of Physics and Centre for Plastic Electronics, Imperial College London, London (United Kingdom)

2016-06-15

The field of flexible electronics has rapidly expanded over the last decades, pioneering novel applications, such as wearable and textile integrated devices, seamless and embedded patch-like systems, soft electronic skins, as well as imperceptible and transient implants. The possibility to revolutionize our daily life with such disruptive appliances has fueled the quest for electronic devices which yield good electrical and mechanical performance and are at the same time light-weight, transparent, conformable, stretchable, and even biodegradable. Flexible metal oxide semiconductor thin-film transistors (TFTs) can fulfill all these requirements and are therefore considered the most promising technology for tomorrow's electronics. This review reflects the establishment of flexible metal oxide semiconductor TFTs, from the development of single devices, large-area circuits, up to entirely integrated systems. First, an introduction on metal oxide semiconductor TFTs is given, where the history of the field is revisited, the TFT configurations and operating principles are presented, and the main issues and technological challenges faced in the area are analyzed. Then, the recent advances achieved for flexible n-type metal oxide semiconductor TFTs manufactured by physical vapor deposition methods and solution-processing techniques are summarized. In particular, the ability of flexible metal oxide semiconductor TFTs to combine low temperature fabrication, high carrier mobility, large frequency operation, extreme mechanical bendability, together with transparency, conformability, stretchability, and water dissolubility is shown. Afterward, a detailed analysis of the most promising metal oxide semiconducting materials developed to realize the state-of-the-art flexible p-type TFTs is given. Next, the recent progresses obtained for flexible metal oxide semiconductor-based electronic circuits, realized with both unipolar and complementary technology, are reported. In

Does the conductivity of interconnect coatings matter for solid oxide fuel cell applications?

Science.gov (United States)

Goebel, Claudia; Fefekos, Alexander G.; Svensson, Jan-Erik; Froitzheim, Jan

2018-04-01

The present work aims to quantify the influence of typical interconnect coatings used for solid oxide fuel cells (SOFC) on area specific resistance (ASR). To quantify the effect of the coating, the dependency of coating thickness on the ASR is examined on Crofer 22 APU at 600 °C. Three different Co coating thicknesses are investigated, 600 nm, 1500 nm, and 3000 nm. Except for the reference samples, the material is pre-oxidized prior to coating to mitigate the outward diffusion of iron and consequent formation of poorly conducting (Co,Fe)3O4 spinel. Exposures are carried out at 600 °C in stagnant laboratory air for 500 h and subsequent ASR measurements are performed. Additionally the microstructure is investigated with scanning electron microscopy (SEM). On all pre-oxidized samples, a homogenous dense Co3O4 top layer is observed beneath which a thin layer of Cr2O3 is present. As the ASR values range between 7 and 12 mΩcm2 for all pre-oxidized samples, even though different Co3O4 thicknesses are observed, the results strongly suggest that for most applicable cases the impact of the coating on ASR is negligible and the main contributor is Cr2O3.

Hard X-ray PhotoElectron Spectroscopy of transition metal oxides: Bulk compounds and device-ready metal-oxide interfaces

International Nuclear Information System (INIS)

Borgatti, F.; Torelli, P.; Panaccione, G.

2016-01-01

Highlights: • Hard X-ray PhotoElectron Spectroscopy (HAXPES) applied to buried interfaces of systems involving Transition Metal Oxides. • Enhanced contribution of the s states at high kinetic energies both for valence and core level spectra. • Sensitivity to chemical changes promoted by electric field across metal-oxide interfaces in resistive switching devices. - Abstract: Photoelectron spectroscopy is one of the most powerful tool to unravel the electronic structure of strongly correlated materials also thanks to the extremely large dynamic range in energy, coupled to high energy resolution that this form of spectroscopy covers. The kinetic energy range typically used for photoelectron experiments corresponds often to a strong surface sensitivity, and this turns out to be a disadvantage for the study of transition metal oxides, systems where structural and electronic reconstruction, different oxidation state, and electronic correlation may significantly vary at the surface. We report here selected Hard X-ray PhotoElectron Spectroscopy (HAXPES) results from transition metal oxides, and from buried interfaces, where we highlight some of the important features that such bulk sensitive technique brings in the analysis of electronic properties of the solids.

Hard X-ray PhotoElectron Spectroscopy of transition metal oxides: Bulk compounds and device-ready metal-oxide interfaces

Energy Technology Data Exchange (ETDEWEB)

Borgatti, F., E-mail: francesco.borgatti@cnr.it [Istituto per lo Studio dei Materiali Nanostrutturati (ISMN), Consiglio Nazionale delle Ricerche (CNR), via P. Gobetti 101, Bologna I-40129 (Italy); Torelli, P.; Panaccione, G. [Istituto Officina dei Materiali (IOM)-CNR, Laboratorio TASC, Area Science Park, Trieste I-34149 (Italy)

2016-04-15

Highlights: • Hard X-ray PhotoElectron Spectroscopy (HAXPES) applied to buried interfaces of systems involving Transition Metal Oxides. • Enhanced contribution of the s states at high kinetic energies both for valence and core level spectra. • Sensitivity to chemical changes promoted by electric field across metal-oxide interfaces in resistive switching devices. - Abstract: Photoelectron spectroscopy is one of the most powerful tool to unravel the electronic structure of strongly correlated materials also thanks to the extremely large dynamic range in energy, coupled to high energy resolution that this form of spectroscopy covers. The kinetic energy range typically used for photoelectron experiments corresponds often to a strong surface sensitivity, and this turns out to be a disadvantage for the study of transition metal oxides, systems where structural and electronic reconstruction, different oxidation state, and electronic correlation may significantly vary at the surface. We report here selected Hard X-ray PhotoElectron Spectroscopy (HAXPES) results from transition metal oxides, and from buried interfaces, where we highlight some of the important features that such bulk sensitive technique brings in the analysis of electronic properties of the solids.

Electron transport investigation of layered MoO3 oxides doped with different concentrations of Nb2O5 oxide

International Nuclear Information System (INIS)

Al-Khawaja, S.; Kasem, M.

2008-07-01

The dc and ac electric conductivity has been studied for numerous samples of molybdenum oxide MoO 3 doped with niobium oxide Nb 2 O 5 elaborated via the solid state reactions. By means of the electric resistivity and dielectricity curves obtained as a function of temperature, and according to the dopant concentration, the behaviour of these compounds has been allocated. Most of the investigated samples, which are insulating at room temperature, have been witnessed to exhibit simultaneously two different electric comportments; metallic and semiconducting within the range of low and high temperatures respectively, designated by a critical temperature related to the nature of the material. Both of these behaviours are attributed electronically to ionic conduction mechanism, occurring in the solid material formed upon doping with Nb 2 O 5 , which is utterly diffused into the layered structure of MoO 3 particularly for x≥40% concentrations and accompanied by relaxation in the dielectric function between 5 Hz and 13 M Hz.(Authors)

The effect of driven electron-phonon coupling on the electronic conductance of a polar nanowire

Energy Technology Data Exchange (ETDEWEB)

Mardaani, Mohammad, E-mail: mohammad-m@sci.sku.ac.ir; Rabani, Hassan, E-mail: rabani-h@sci.sku.ac.ir [Department of Physics, Faculty of Science, Shahrekord University, P. O. Box 115, Shahrekord (Iran, Islamic Republic of); Nanotechnology Research Center, Shahrekord University, 8818634141 Shahrekord (Iran, Islamic Republic of); Esmaili, Esmat; Shariati, Ashrafalsadat [Department of Physics, Faculty of Science, Shahrekord University, P. O. Box 115, Shahrekord (Iran, Islamic Republic of)

2015-08-07

A semi-classical model is proposed to explore the effect of electron-phonon coupling on the coherent electronic transport of a polar chain which is confined between two rigid leads in the presence of an external electric field. To this end, we construct the model by means of Green's function technique within the nearest neighbor tight-binding and harmonic approximations. For a time-periodic electric field, the atomic displacements from the equilibrium positions are obtained precisely. The result is then used to compute the electronic transport properties of the chain within the Peierls-type model. The numerical results indicate that the conductance of the system shows interesting behavior in some special frequencies. For each special frequency, there is an electronic quasi-state in which the scattering of electrons by vibrating atoms reaches maximum. The system electronic conductance decreases dramatically at the strong electron-phonon couplings and low electron energies. In the presence of damping forces, the electron-phonon interaction has a less significant effect on the conductance.

The effect of driven electron-phonon coupling on the electronic conductance of a polar nanowire

International Nuclear Information System (INIS)

Mardaani, Mohammad; Rabani, Hassan; Esmaili, Esmat; Shariati, Ashrafalsadat

2015-01-01

A semi-classical model is proposed to explore the effect of electron-phonon coupling on the coherent electronic transport of a polar chain which is confined between two rigid leads in the presence of an external electric field. To this end, we construct the model by means of Green's function technique within the nearest neighbor tight-binding and harmonic approximations. For a time-periodic electric field, the atomic displacements from the equilibrium positions are obtained precisely. The result is then used to compute the electronic transport properties of the chain within the Peierls-type model. The numerical results indicate that the conductance of the system shows interesting behavior in some special frequencies. For each special frequency, there is an electronic quasi-state in which the scattering of electrons by vibrating atoms reaches maximum. The system electronic conductance decreases dramatically at the strong electron-phonon couplings and low electron energies. In the presence of damping forces, the electron-phonon interaction has a less significant effect on the conductance

Pentacene ohmic contact on the transparent conductive oxide films

International Nuclear Information System (INIS)

Chu, Jian-An; Zeng, Jian-Jhou; Wu, Kuo-Chen; Lin, Yow-Jon

2010-01-01

Low-resistance ohmic contacts are essential to improve the performance of pentacene-based electronic and optoelectronic devices. In this study, we reported ohmic contact formation at the indium tin oxide (ITO)/pentacene and indium cerium oxide (ICO)/pentacene interfaces. According to the observed results from current-voltage and Kelvin probe measurements, we found that the lower contact resistivity of the ICO/pentacene sample than the ITO/pentacene sample may be attributed to the higher surface work function of ICO than ITO.

A polarity-induced defect mechanism for conductivity and magnetism at polar-nonpolar oxide interfaces.

Science.gov (United States)

Yu, Liping; Zunger, Alex

2014-10-13

The discovery of conductivity and magnetism at the polar-nonpolar interfaces of insulating nonmagnetic oxides such as LaAlO3 and SrTiO3 has raised prospects for attaining interfacial functionalities absent in the component materials. Yet, the microscopic origin of such emergent phenomena remains unclear, posing obstacles to design of improved functionalities. Here we present first principles calculations of electronic and defect properties of LaAlO3/SrTiO3 interfaces and reveal a unifying mechanism for the origins of both conductivity and magnetism. We demonstrate that the polar discontinuity across the interface triggers thermodynamically the spontaneous formation of certain defects that in turn cancel the polar field induced by the polar discontinuity. The ionization of the spontaneously formed surface oxygen vacancy defects leads to interface conductivity, whereas the unionized Ti-on-Al antisite defects lead to interface magnetism. The proposed mechanism suggests practical design principles for inducing and controlling both conductivity and magnetism at general polar-nonpolar interfaces.

New lithium-ion conducting perovskite oxides related to (Li, La)TiO3

Indian Academy of Sciences (India)

Unknown

We describe the synthesis and lithium-ion conductivity of new perovskite-related oxides ... work on lithium-ion conducting perovskite oxides containing d0 cations. Keywords. ..... On the other hand, Nb/Ta compounds show a higher conductivity.

Electrically conductive aluminum oxide thin film used as cobalt catalyst-support layer in vertically aligned carbon nanotube growth

International Nuclear Information System (INIS)

Azam, Mohd Asyadi; Ismail, Syahriza; Mohamad, Noraiham; Isomura, Kazuki; Shimoda, Tatsuya

2015-01-01

This paper will present the unique characteristics of aluminum oxide (Al–O) and cobalt catalyst included in aligned carbon nanotube (CNT) electrode system of energy storage device, namely electrochemical capacitor. Electrical conductivity and nanostructure of the thermally oxidized Al–O used as catalyst-support layer in vertically grown single-walled CNTs were studied. Al–O films were characterized by means of current–voltage measurement and high resolution transmission electron microscopy analysis. The Al–O support layer was found to be conductive, with a relatively low resistance and, approximately 20 nm film thickness of Al–O is suggested to be too thin to form insulating barrier. The scanning TEM—annular dark field analysis confirmed that the nanosized cobalt catalyst particles distributed on Al–O surfaces and also embedded inside the Al–O film structure. (paper)

Thermal diffusivity and conductivity of thorium- uranium mixed oxides

Science.gov (United States)

Saoudi, M.; Staicu, D.; Mouris, J.; Bergeron, A.; Hamilton, H.; Naji, M.; Freis, D.; Cologna, M.

2018-03-01

Thorium-uranium oxide pellets with high densities were prepared at the Canadian Nuclear Laboratories (CNL) by co-milling, pressing, and sintering at 2023 K, with UO2 mass contents of 0, 1.5, 3, 8, 13, 30, 60 and 100%. At the Joint Research Centre, Karlsruhe (JRC-Karlsruhe), thorium-uranium oxide pellets were prepared using the spark plasma sintering (SPS) technique with 79 and 93 wt. % UO2. The thermal diffusivity of (Th1-xUx)O2 (0 ≤ x ≤ 1) was measured at CNL and at JRC-Karlsruhe using the laser flash technique. ThO2 and (Th,U)O2 with 1.5, 3, 8 and 13 wt. % UO2 were found to be semi-transparent to the infrared wavelength of the laser and were coated with graphite for the thermal diffusivity measurements. This semi-transparency decreased with the addition of UO2 and was lost at about 30 wt. % of UO2 in ThO2. The thermal conductivity was deduced using the measured density and literature data for the specific heat capacity. The thermal conductivity for ThO2 is significantly higher than for UO2. The thermal conductivity of (Th,U)O2 decreases rapidly with increasing UO2 content, and for UO2 contents of 60% and higher, the conductivity of the thorium-uranium oxide fuel is close to UO2. As the mass difference between the Th and U atoms is small, the thermal conductivity decrease is attributed to the phonon scattering enhanced by lattice strain due to the introduction of uranium in ThO2 lattice. The new results were compared to the data available in the literature and were evaluated using the classical phonon transport model for oxide systems.

Proton Conducting Graphene Oxide/Chitosan Composite Electrolytes as Gate Dielectrics for New-Concept Devices.

Science.gov (United States)

Feng, Ping; Du, Peifu; Wan, Changjin; Shi, Yi; Wan, Qing

2016-09-30

New-concept devices featuring the characteristics of ultralow operation voltages and low fabrication cost have received increasing attention recently because they can supplement traditional Si-based electronics. Also, organic/inorganic composite systems can offer an attractive strategy to combine the merits of organic and inorganic materials into promising electronic devices. In this report, solution-processed graphene oxide/chitosan composite film was found to be an excellent proton conducting electrolyte with a high specific capacitance of ~3.2 μF/cm 2 at 1.0 Hz, and it was used to fabricate multi-gate electric double layer transistors. Dual-gate AND logic operation and two-terminal diode operation were realized in a single device. A two-terminal synaptic device was proposed, and some important synaptic behaviors were emulated, which is interesting for neuromorphic systems.

Steam electrolysis by solid oxide electrolysis cells (SOECs) with proton-conducting oxides

KAUST Repository

Bi, Lei; Boulfrad, Samir; Traversa, Enrico

2014-01-01

Energy crisis and environmental problems caused by the conventional combustion of fossil fuels boost the development of renewable and sustainable energies. H2 is regarded as a clean fuel for many applications and it also serves as an energy carrier for many renewable energy sources, such as solar and wind power. Among all the technologies for H2 production, steam electrolysis by solid oxide electrolysis cells (SOECs) has attracted much attention due to its high efficiency and low environmental impact, provided that the needed electrical power is generated from renewable sources. However, the deployment of SOECs based on conventional oxygen-ion conductors is limited by several issues, such as high operating temperature, hydrogen purification from water, and electrode stability. To avoid these problems, proton-conducting oxides are proposed as electrolyte materials for SOECs. This review paper provides a broad overview of the research progresses made for proton-conducting SOECs, summarizing the past work and finding the problems for the development of proton-conducting SOECs, as well as pointing out potential development directions.

Steam electrolysis by solid oxide electrolysis cells (SOECs) with proton-conducting oxides.

Science.gov (United States)

Bi, Lei; Boulfrad, Samir; Traversa, Enrico

2014-12-21

Energy crisis and environmental problems caused by the conventional combustion of fossil fuels boost the development of renewable and sustainable energies. H2 is regarded as a clean fuel for many applications and it also serves as an energy carrier for many renewable energy sources, such as solar and wind power. Among all the technologies for H2 production, steam electrolysis by solid oxide electrolysis cells (SOECs) has attracted much attention due to its high efficiency and low environmental impact, provided that the needed electrical power is generated from renewable sources. However, the deployment of SOECs based on conventional oxygen-ion conductors is limited by several issues, such as high operating temperature, hydrogen purification from water, and electrode stability. To avoid these problems, proton-conducting oxides are proposed as electrolyte materials for SOECs. This review paper provides a broad overview of the research progresses made for proton-conducting SOECs, summarizing the past work and finding the problems for the development of proton-conducting SOECs, as well as pointing out potential development directions.

Low Temperature Synthesis of Fluorine-Doped Tin Oxide Transparent Conducting Thin Film by Spray Pyrolysis Deposition.

Science.gov (United States)

Ko, Eun-Byul; Choi, Jae-Seok; Jung, Hyunsung; Choi, Sung-Churl; Kim, Chang-Yeoul

2016-02-01

Transparent conducting oxide (TCO) is widely used for the application of flat panel display like liquid crystal displays and plasma display panel. It is also applied in the field of touch panel, solar cell electrode, low-emissivity glass, defrost window, and anti-static material. Fluorine-doped tin oxide (FTO) thin films were fabricated by spray pyrolysis of ethanol-added FTO precursor solutions. FTO thin film by spray pyrolysis is very much investigated and normally formed at high temperature, about 500 degrees C. However, these days, flexible electronics draw many attentions in the field of IT industry and the research for flexible transparent conducting thin film is also required. In the industrial field, indium-tin oxide (ITO) film on polymer substrate is widely used for touch panel and displays. In this study, we investigated the possibility of FTO thin film formation at relatively low temperature of 250 degrees C. We found out that the control of volume of input precursor and exhaust gases could make it possible to form FTO thin film with a relatively low electrical resistance, less than 100 Ohm/sq and high optical transmittance about 88%.

Enhancing oxygen transport through Mixed-Ionic-and-Electronic-Conducting ceramic membranes

Science.gov (United States)

Yu, Anthony S.

Ceramic membranes based on Mixed-Ionic-and-Electronic-Conducting (MIEC) oxides are capable of separating oxygen from air in the presence of an oxygen partial-pressure gradient. These MIEC membranes show great promise for oxygen consuming industrial processes, such as the production of syngas from steam reforming of natural gas (SRM), as well as for electricity generation in Solid Oxide Fuel Cells (SOFC). For both applications, the overall performance is dictated by the rate of oxygen transport across the membrane. Oxygen transport across MIEC membranes is composed of a bulk oxygen-ion diffusion process and surface processes, such as surface reactions and adsorption/desorption of gaseous reactants/products. The main goal of this thesis was to determine which process is rate-limiting in order to significantly enhance the overall rate of oxygen transport in MIEC membrane systems. The rate-limiting step was determined by evaluating the total resistance to oxygen transfer, Rtot. Rtot is the sum of a bulk diffusion resistance in the membrane itself, Rb, and interfacial loss components, Rs. Rb is a function of the membrane's ionic conductivity and thickness, while Rs arises primarily from slow surface-exchange kinetics that cause the P(O2) at the surfaces of the membrane to differ from the P(O 2) in the adjacent gas phases. Rtot can be calculated from the Nernst potential across the membrane and the measured oxygen flux. The rate-limiting process can be determined by evaluating the relative contributions of the various losses, Rs and Rb, to Rtot. Using this method, this thesis demonstrates that for most membrane systems, Rs is the dominating factor. In the development of membrane systems with high oxygen transport rates, thin membranes with high ionic conductivities are required to achieve fast bulk oxygen-ion diffusion. However, as membrane thickness is decreased, surface reaction kinetics become more important in determining the overall transport rate. The two

Mixed conductivity in erbia-stabilized bismuth oxide

NARCIS (Netherlands)

Vinke, I.C.; Vinke, I.C.; Boukamp, Bernard A.; de Vries, K.J.; de Vries, Karel Jan; Burggraaf, Anthonie; Burggraaf, A.J.

1992-01-01

The mixed conducting solid solution 0.75Bi2O3−0.25Tb4O7 (BT40) was studied by impedance techniques using ionically blocking electrodes. These measurements confirmed the p-type electronic conductivity suggested in literature. In air at temperatures between 600 and 900 K the ionic transference number

The thermodynamical foundation of electronic conduction in solids

Science.gov (United States)

Bringuier, E.

2018-03-01

In elementary textbooks, the microscopic justification of Ohm’s local law in a solid medium starts with Drude’s classical model of electron transport and next discusses the quantum-dynamical and statistical amendments. In this paper, emphasis is laid instead upon the thermodynamical background motivated by the Joule-Lenz heating effect accompanying conduction and the fact that the conduction electrons are thermalized at the lattice temperature. Both metals and n-type semiconductors are considered; but conduction under a magnetic field is not. Proficiency in second-year thermodynamics and vector analysis is required from an undergraduate university student in physics so that the content of the paper can be taught to third-year students. The necessary elements of quantum mechanics are posited in this paper without detailed justification. We start with the equilibrium-thermodynamic notion of the chemical potential of the electron gas, the value of which distinguishes metals from semiconductors. Then we turn to the usage of the electrochemical potential in the description of near-equilibrium electron transport. The response of charge carriers to the electrochemical gradient involves the mobility, which is the reciprocal of the coefficient of the effective friction force opposing the carrier drift. Drude’s calculation of mobility is restated with the dynamical requirements of quantum physics. Where the carrier density is inhomogeneous, there appears diffusion, the coefficient of which is thermodynamically related to the mobility. Next, it is remarked that the release of heat was ignored in Drude’s original model. In this paper, the flow of Joule heat is handled thermodynamically within an energy balance where the voltage generator, the conduction electrons and the host lattice are involved in an explicit way. The notion of dissipation is introduced as the rate of entropy creation in a steady state. The body of the paper is restricted to the case of one

Participation of Low Molecular Weight Electron Carriers in Oxidative Protein Folding

Directory of Open Access Journals (Sweden)

József Mandl

2009-03-01

Full Text Available Oxidative protein folding is mediated by a proteinaceous electron relay system, in which the concerted action of protein disulfide isomerase and Ero1 delivers the electrons from thiol groups to the final acceptor. Oxygen appears to be the final oxidant in aerobic living organisms, although the existence of alternative electron acceptors, e.g. fumarate or nitrate, cannot be excluded. Whilst the protein components of the system are well-known, less attention has been turned to the role of low molecular weight electron carriers in the process. The function of ascorbate, tocopherol and vitamin K has been raised recently. In vitro and in vivo evidence suggests that these redox-active compounds can contribute to the functioning of oxidative folding. This review focuses on the participation of small molecular weight redox compounds in oxidative protein folding.

Oxide Thin-Film Electronics using All-MXene Electrical Contacts

KAUST Repository

Wang, Zhenwei

2018-02-23

2D MXenes have shown great promise in electrochemical and electromagnetic shielding applications. However, their potential use in electronic devices is significantly less explored. The unique combination of metallic conductivity and hydrophilic surface suggests that MXenes can also be promising in electronics and sensing applications. Here, it is shown that metallic Ti3C2 MXene with work function of 4.60 eV can make good electrical contact with both zinc oxide (ZnO) and tin monoxide (SnO) semiconductors, with negligible band offsets. Consequently, both n-type ZnO and p-type SnO thin-film transistors (TFTs) have been fabricated entirely using large-area MXene (Ti3C2) electrical contacts, including gate, source, and drain. The n- and p-type TFTs show balanced performance, including field-effect mobilities of 2.61 and 2.01 cm2 V−1 s−1 and switching ratios of 3.6 × 106 and 1.1 × 103, respectively. Further, complementary metal oxide semiconductor (CMOS) inverters are demonstrated. The CMOS inverters show large voltage gain of 80 and excellent noise margin of 3.54 V, which is 70.8% of the ideal value. Moreover, the operation of CMOS inverters is shown to be very stable under a 100 Hz square waveform input. The current results suggest that MXene (Ti3C2) can play an important role as contact material in nanoelectronics.

Transparent conductive oxides for thin-film silicon solar cells

NARCIS (Netherlands)

Löffler, J.

2005-01-01

This thesis describes research on thin-film silicon solar cells with focus on the transparent conductive oxide (TCO) for such devices. In addition to the formation of a transparent and electrically conductive front electrode for the solar cell allowing photocurrent collection with low ohmic losses,

Ionic conductivity in new perovskite type oxides: NaAZrMO{sub 6} (A = Ca or Sr; M = Nb or Ta)

Energy Technology Data Exchange (ETDEWEB)

Rajendran, Deepthi N.; Ravindran Nair, K. [Regional Research Laboratory (CSIR), Trivandrum 695019 (India); Prabhakar Rao, P. [Regional Research Laboratory (CSIR), Trivandrum 695019 (India)], E-mail: padala_rao@yahoo.com; Sibi, K.S.; Koshy, Peter [Regional Research Laboratory (CSIR), Trivandrum 695019 (India); Vaidyan, V.K. [Department of Physics, University of Kerala, Trivandrum 695581 (India)

2008-06-15

New oxides of the type, NaAZrMO{sub 6} (M = Ca or Sr; M = Nb or Ta), have been prepared by the solid-state reaction technique. Phase identification by powder X-ray diffraction (XRD) shows that NaCaZrMO{sub 6} has orthorhombic perovskite type structure (Pnma) and NaSrZrMO{sub 6} has cubic perovskite type structure (Pm3m). The grain morphology observation by scanning electron microscope (SEM) shows well-sintered grains. ac impedance spectra and electrical conductivity measurements in air, oxygen and nitrogen atmospheres indicate that they are probable oxide ion conductors with ionic conductivities of the order of 10{sup -3} S cm{sup -1} at 750 deg. C.

Proton and oxide ion conductivity of doped LaScO3

DEFF Research Database (Denmark)

Lybye, D.; Bonanos, N.

1999-01-01

. At temperatures below 800 degrees C and low partial pressure of oxygen, proton conduction was dominant. Above this temperature, the ionic conductivity is dominated by oxide ion transport. The protonic transport number was estimated from the conductivities measured in dry and in water-moisturised gas. An isotope......The conductivity of La0.9Sr0.1Sc0.9Mg0.1O3 has been studied by impedance spectroscopy in controlled atmospheres. The material was found to be a mixed conductor with p-type conduction at high oxygen partial pressures and a combined proton and oxide ion conductor at low oxygen partial pressures...

RF-superimposed DC and pulsed DC sputtering for deposition of transparent conductive oxides

International Nuclear Information System (INIS)

Stowell, Michael; Mueller, Joachim; Ruske, Manfred; Lutz, Mark; Linz, Thomas

2007-01-01

Transparent conductive oxide films are widely used materials for electronic applications such as flat panel displays and solar cells. The superposition of DC and pulsed DC power by a certain fraction of RF power was applied to deposit indium tin oxide films. This technique allows an additional tuning of different parameters relevant to film growth, and yields high quality films even under kinetically limited conditions. A long-term stable RF/DC process could be realized by using different combinations of standard power supply components, which includes a fully reliable arc handling system for both the RF and DC generators. The effectiveness of the arc handling system is illustrated by the current and voltage behavior recorded for actual arcing events. The resistivity of indium tin oxide films is strongly influenced by the respective sputtering mode. The best resistivity values of 145-148 μΩ cm were obtained by RF-superimposed pulsed DC sputtering at a pulse frequency between 100 and 200 kHz and a substrate temperature as low as 140 deg. C. In addition, the films were extremely smooth with a surface roughness of 1-2.5 nm

Electronic conductance of quantum wire with serial periodic potential structures

International Nuclear Information System (INIS)

Fayad, Hisham M.; Shabat, Mohammed M.; Abdus Salam International Centre for Theoretical Physics, Trieste

2000-08-01

A theory based on the total transfer matrix is presented to investigate the electronic conductance in a quantum wire with serial periodic potentials. We apply the formalism in computation of the electronic conductance in a wire with different physical parameters of the wire structure. The numerical results could be used in designing some future quantum electronic devices. (author)

Three-dimensional ionic conduction in the strained electrolytes of solid oxide fuel cells

International Nuclear Information System (INIS)

Han, Yupei; Zou, Minda; Lv, Weiqiang; He, Weidong; Mao, Yiwu; Wang, Wei

2016-01-01

Flexible power sources including fuel cells and batteries are the key to realizing flexible electronic devices with pronounced foldability. To understand the bending effects in these devices, theoretical analysis on three-dimensional (3-D) lattice bending is necessary. In this report, we derive a 3-D analytical model to analyze the effects of electrolyte crystal bending on ionic conductivity in flexible solid-state batteries/fuel cells. By employing solid oxide fuel cells as a materials' platform, the intrinsic parameters of bent electrolyte materials, including lattice constant, Young's modulus, and Poisson ratio, are evaluated. Our work facilitates the rational design of highly efficient flexible electrolytes for high-performance flexible device applications.

Relation between electron- and photon-caused oxidation in EUVL optics

Science.gov (United States)

Malinowski, Michael E.; Steinhaus, Charles A.; Meeker, Donald E.; Clift, W. Miles; Klebanoff, Leonard E.; Bajt, Sasa

2003-06-01

Extreme ultraviolet (EUV)-induced oxidation of silicon-capped, [Mo/Si] multilayer mirrors in the presence of background levels of water vapor is recognized as one of the most serious threats to multilayer lifetime since oxidation of the top silicon layer is an irreversible process. The current work directly compares the oxidation on a silicon-capped, [Mo/Si] multilayers caused by EUV photons with the oxidation caused by 1 keV electrons in the presence of the same water vapor environment (2 x 10-6 Torr). Similar, 4 nm, silicon-capped, [Mo/Si] multilayer mirror samples were exposed to photons (95.3 eV) + water vapor at the ALS, LBNL, and also to a 1 keV electron beam + water vapor in separate experimental systems. The results of this work showed that the oxidation produced by ~1 µA of e-beam current was found to be equivalent to that produced by ~1 mW of EUV exposure. These results will help allow the use of 1 keV electrons beams, instead of EUV photons, to perform environmental testing of multilayers in a low-pressure water environment and to more accurately determine projected mirror lifetimes based on the electron beam exposures.

Lipase immobilized on nanostructured cerium oxide thin film coated on transparent conducting oxide electrode for butyrin sensing

International Nuclear Information System (INIS)

Panky, Sreedevi; Thandavan, Kavitha; Sivalingam, Durgajanani; Sethuraman, Swaminathan; Krishnan, Uma Maheswari; Jeyaprakash, Beri Gopalakrishnan; Rayappan, John Bosco Balaguru

2013-01-01

Nanostructured cerium oxide (CeO 2 ) thin films were deposited on transparent conducting oxide (TCO) substrate using spray pyrolysis technique with cerium nitrate salt, Ce(NO 3 ) 3 ·6H 2 O as precursor. Fluorine doped cadmium oxide (CdO:F) thin film prepared using spray pyrolysis technique acts as the TCO film and hence the bare electrode. The structural, morphological and elemental characterizations of the films were carried out using X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM) and energy dispersive X-ray analysis (EDX) respectively. The diffraction peak positions in XRD confirmed the formation of highly crystalline ceria with cubic structure and FE-SEM images showed uniform adherent films with granular morphology. The band gaps of CeO 2 and TCO were found to be 3.2 eV and 2.6 eV respectively. Lipase enzyme was physisorbed on the surface of CeO 2 /TCO film to form the lipase/nano-CeO 2 /TCO bioelectrode. Sensing studies were carried out using cyclic voltammetry and amperometry, with lipase/nano-CeO 2 /TCO as working electrode and tributyrin as substrate. The mediator-free biosensor with nanointerface exhibited excellent linearity (0.33–1.98 mM) with a lowest detection limit of 2 μM with sharp response time of 5 s and a shelf life of about 6 weeks. -- Graphical abstract: Nanostructured cerium oxide thin films were deposited on transparent conducting oxide (TCO) substrate using spray pyrolysis technique. Fluorine doped cadmium oxide (CdO:F) thin film acts as the TCO film and hence the working electrode. Lipase enzyme was physisorbed on the surface of CeO 2 /TCO film and hence the lipase/nano-CeO 2 /TCO bioelectrode has been fabricated. Sensing studies were carried out using cyclic voltammetry and amperometry with tributyrin as substrate. The mediator-free biosensor with nanointerface exhibited excellent linearity (0.33–1.98 mM) with a lowest detection limit of 2 μM with sharp response time of 5 s and a shelf life of about 6

Lateral protonic/electronic hybrid oxide thin-film transistor gated by SiO2 nanogranular films

International Nuclear Information System (INIS)

Zhu, Li Qiang; Chao, Jin Yu; Xiao, Hui

2014-01-01

Ionic/electronic interaction offers an additional dimension in the recent advancements of condensed materials. Here, lateral gate control of conductivities of indium-zinc-oxide (IZO) films is reported. An electric-double-layer (EDL) transistor configuration was utilized with a phosphorous-doped SiO 2 nanogranular film to provide a strong lateral electric field. Due to the strong lateral protonic/electronic interfacial coupling effect, the IZO EDL transistor could operate at a low-voltage of 1 V. A resistor-loaded inverter is built, showing a high voltage gain of ∼8 at a low supply voltage of 1 V. The lateral ionic/electronic coupling effects are interesting for bioelectronics and portable electronics

Transparent Conducting Films with Multilayered Structures Formed by Carbon Nanotubes and Reduced Graphene Oxides

International Nuclear Information System (INIS)

Kang, Jie Hun; Jang, Hyun Chul; Choi, Jung Mi; Hyeon, Jae Young; Sok, Jung Hyun

2014-01-01

The replacement for indium tin oxide (ITO) in electronic displays should have comparable optical transmittance and electrical conductivity while being easy to source and manufacture. However, novel materials such as single walled carbon nanotubes (SWCNTs) and reduced graphene oxides (RGOs) are incapable of addressing these challenges. We demonstrate a simple method to fabricate good transparent conductive films (TCFs) by combining and leveraging the superior optical transparency of RGOs and the excellent electrical conductivity of SWCNTs. This method affords thin multilayers of SWCNTs and RGOs with excellent optical and electrical properties because these properties are correlated with spraying time and the amount of SWCNTs or RGOs. In general, transmittance is advantageous to RGO as conductance is to CNTs. With a view to finding good TCFs with reduced sheet resistance, but with little sacrifice of transmittance, it is natural to explore the combination of CNT and RGO. The sandwiched multilayer of SWCNTs and RGOs exhibited a low sheet resistance of 214.2 Ω/sq, which was comparable to that of SWCNTs, and a transmittance of 60% at a wavelength of 550 nm. To further reduce the sheet resistance and improve the transparency of the multilayer TCFs, Au doping was carried out. The doping, in combination with controlled spraying of the amount of SWCNTs and RGOs, led to multilayers with resistance/transmittance combinations of 141.3 Ω/sq and 70% and 371.5 Ω/sq and 83%. These properties meet the requisite criteria for an ITO replacement.

Nanostructured transparent conducting oxide electrochromic device

Science.gov (United States)

Milliron, Delia; Tangirala, Ravisubhash; Llordes, Anna; Buonsanti, Raffaella; Garcia, Guillermo

2016-05-17

The embodiments described herein provide an electrochromic device. In an exemplary embodiment, the electrochromic device includes (1) a substrate and (2) a film supported by the substrate, where the film includes transparent conducting oxide (TCO) nanostructures. In a further embodiment, the electrochromic device further includes (a) an electrolyte, where the nanostructures are embedded in the electrolyte, resulting in an electrolyte, nanostructure mixture positioned above the substrate and (b) a counter electrode positioned above the mixture. In a further embodiment, the electrochromic device further includes a conductive coating deposited on the substrate between the substrate and the mixture. In a further embodiment, the electrochromic device further includes a second substrate positioned above the mixture.

Self-limited kinetics of electron doping in correlated oxides

International Nuclear Information System (INIS)

Chen, Jikun; Zhou, You; Jiang, Jun; Shi, Jian; Ramanathan, Shriram; Middey, Srimanta; Chakhalian, Jak; Chen, Nuofu; Chen, Lidong; Shi, Xun; Döbeli, Max

2015-01-01

Electron doping by hydrogenation can reversibly modify the electrical properties of complex oxides. We show that in order to realize large, fast, and reversible response to hydrogen, it is important to consider both the electron configuration on the transition metal 3d orbitals, as well as the thermodynamic stability in nickelates. Specifically, large doping-induced resistivity modulations ranging several orders of magnitude change are only observed for rare earth nickelates with small ionic radii on the A-site, in which case both electron correlation effects and the meta-stability of Ni 3+ are important considerations. Charge doping via metastable incorporation of ionic dopants is of relevance to correlated oxide-based devices where advancing approaches to modify the ground state electronic properties is an important problem

In-plane conductance of thin films as a probe of surface chemical environment: Adsorbate effects on film electronic properties of indium tin oxide and gold

Science.gov (United States)

Swint, Amy Lynn

Changes in the in-plane conductance of conductive thin films are observed as a result of chemical adsorption at the surface. Reaction of the indium tin oxide (ITO) surface with Bronsted acids (bases) leads to increases (decreases) in its in-plane conductance as measured by a four-point probe configuration. The conductance varies monotonically with pH suggesting that the degree of surface protonation or hydroxylation controls the surface charge density, which in turn affects the width of the n-type depletion layer, and ultimately the in-plane conductance. Measurements at constant pH with a series of tetraalkylammonium hydroxide species of varying cation size indicate that surface dipoles also affect ITO conductance by modulating the magnitude of the surface polarization. Modulating the double layer with varying aqueous salt solutions also affects ITO conductance, though not to the same degree as strong Bronsted acids and bases. Solvents of varying dielectric constant and proton donating ability (ethanol, dimethylformamide) decrease ITO conductance relative to H2O. In addition, changing solvent gives rise to thermally-derived conductance transients, which result from exothermic solvent mixing. The self-assembly of alkanethiols at the surface increases the conductance of ITO films, most likely through carrier population effects. In all cases examined the combined effects of surface charge, adsorbed dipole layer magnitude and carrier injection are responsible for altering the ITO conductance. Besides being directly applicable to the control of electronic properties, these results also point to the use of four-point probe resistance measurements in condensed phase sensing applications. Ultrasensitive conductance-based gas phase sensing of organothiol adsorption to gold nanowires is accomplished with a limit of detection in the 105 molecule range. Further refinement of the inherently low noise resistance measurement may lead to observation of single adsorption events at

Highly Conductive and Reliable Copper-Filled Isotropically Conductive Adhesives Using Organic Acids for Oxidation Prevention

Science.gov (United States)

Chen, Wenjun; Deng, Dunying; Cheng, Yuanrong; Xiao, Fei

2015-07-01

The easy oxidation of copper is one critical obstacle to high-performance copper-filled isotropically conductive adhesives (ICAs). In this paper, a facile method to prepare highly reliable, highly conductive, and low-cost ICAs is reported. The copper fillers were treated by organic acids for oxidation prevention. Compared with ICA filled with untreated copper flakes, the ICA filled with copper flakes treated by different organic acids exhibited much lower bulk resistivity. The lowest bulk resistivity achieved was 4.5 × 10-5 Ω cm, which is comparable to that of commercially available Ag-filled ICA. After 500 h of 85°C/85% relative humidity (RH) aging, the treated ICAs showed quite stable bulk resistivity and relatively stable contact resistance. Through analyzing the results of x-ray diffraction, x-ray photoelectron spectroscopy, and thermogravimetric analysis, we found that, with the assistance of organic acids, the treated copper flakes exhibited resistance to oxidation, thus guaranteeing good performance.

The electrical conductivity of an interacting electron gas

International Nuclear Information System (INIS)

Kojima, D.Y.

1977-01-01

A manybody theory by the propagator method developed by Montroll and Ward for the equilibrium statistical mechanics, is reformulated to describe the electrical conductivity for an electron gas system containing impurity. The theory includes electron-impurity interaction to the infinite order and electron-electron interaction to the first order exchange effect. The propagator used by Montroll and Ward is separated into two propagators, each of which satisfies either Bloch or Schroedinger equation, to utilize the perturbation method. Correct counting of graphs are presented. Change in the relaxation time due to the electron-electron interaction is explicity shown and compared with recent works [pt

Electron heat conduction and suprathermal particles

International Nuclear Information System (INIS)

Bakunin, O.G.; Krasheninnikov, S.I.

1991-01-01

As recognized at present, the applicability of Spitzer-Harm's theory on electron heat conduction along the magnetic field is limited by comparatively small values of the thermal electron mean free path ratio, λ to the characteristic length of changes in plasma parameters, L: γ=λ/L≤10 -2 . The stationary kinetic equation for the electron distribution function inhomogeneous along the x-axis f e (v,x) allows one to have solutions in the self-similar variables. The objective of a given study is to generalize the solutions for the case of arbitrary Z eff , that will allow one to compare approximate solutions to the kinetic equation with the precise ones in a wide range of parameters. (author) 8 refs., 2 figs

Gallium ion implantation greatly reduces thermal conductivity and enhances electronic one of ZnO nanowires

Directory of Open Access Journals (Sweden)

Minggang Xia

2014-05-01

Full Text Available The electrical and thermal conductivities are measured for individual zinc oxide (ZnO nanowires with and without gallium ion (Ga+ implantation at room temperature. Our results show that Ga+ implantation enhances electrical conductivity by one order of magnitude from 1.01 × 103 Ω−1m−1 to 1.46 × 104 Ω−1m−1 and reduces its thermal conductivity by one order of magnitude from 12.7 Wm−1K−1 to 1.22 Wm−1K−1 for ZnO nanowires of 100 nm in diameter. The measured thermal conductivities are in good agreement with those in theoretical simulation. The increase of electrical conductivity origins in electron donor doping by Ga+ implantation and the decrease of thermal conductivity is due to the longitudinal and transverse acoustic phonons scattering by Ga+ point scattering. For pristine ZnO nanowires, the thermal conductivity decreases only two times when its diameter reduces from 100 nm to 46 nm. Therefore, Ga+-implantation may be a more effective method than diameter reduction in improving thermoelectric performance.

Transmission Electron Microscopy Studies of Electron-Selective Titanium Oxide Contacts in Silicon Solar Cells

KAUST Repository

Ali, Haider; Yang, Xinbo; Weber, Klaus; Schoenfeld, Winston V.; Davis, Kristopher O.

2017-01-01

In this study, the cross-section of electron-selective titanium oxide (TiO2) contacts for n-type crystalline silicon solar cells were investigated by transmission electron microscopy. It was revealed that the excellent cell efficiency of 21

Transparent Conducting Oxides for Photovoltaics: Manipulation of Fermi Level, Work Function and Energy Band Alignment

Directory of Open Access Journals (Sweden)

Diana E. Proffit

2010-11-01

Full Text Available Doping limits, band gaps, work functions and energy band alignments of undoped and donor-doped transparent conducting oxides Zn0, In2O3, and SnO2 as accessed by X-ray and ultraviolet photoelectron spectroscopy (XPS/UPS are summarized and compared. The presented collection provides an extensive data set of technologically relevant electronic properties of photovoltaic transparent electrode materials and illustrates how these relate to the underlying defect chemistry, the dependence of surface dipoles on crystallographic orientation and/or surface termination, and Fermi level pinning.

The electronic and optical properties of germanium tellurite glasses containing various transition metal oxides

International Nuclear Information System (INIS)

Khan, M.N.

1988-01-01

Various transition metal oxides, such as TiO 2 , V 2 O 5 , NiO, CuO, and ZnO are added to germanium-tellurite glass and measurements are reported of the electrical conductivity, density, optical absorption, infra-red absorption spectra, and electron spin resonance. It is found that the d.c. conductivity of glasses containing the same amount of V 2 O 5 is higher than that of germanium tellurite glasses containing a similar amount of other transition metal oxides, and is due to hopping between localized states. The optical absorption measurements show that the fundamental absorption edge is a function of glass composition and the optical absorption is due to forbidden indirect transitions. From the infra-red absorption spectra, it is found that the addition of transition metal oxides does not introduce any new absorption band in the infra-red spectrum of germanium tellurite glasses. A small shift of existing absorptions toward higher wave number is observed. The ESR measurements revealed that some transition metal ions are diamagnetic while others are paramagnetic in the glass network. (author)

Ionic Conductance, Thermal and Morphological Behavior of PEO-Graphene Oxide-Salts Composites

Directory of Open Access Journals (Sweden)

Mohammad Saleem Khan

2015-01-01

Full Text Available Thin films composites of poly(ethylene oxide-graphene oxide were fabricated with and without lithium salts by solvent cast method. The ionic conductivity of these composites was studied at various concentrations of salt polymer-GO complexes and at different temperatures. The effects of temperature and graphene oxide concentration were measured from Arrhenius conductance plots. It is shown that the addition of salts in pure PEO increases conductance many times. The graphene oxide addition has enhanced the conductance approximately 1000 times as compared to that of pure PEO. The activation energies were determined for all the systems which gave higher values for pure PEO and the value decreased with the addition of LiClO4 and LiCl salts and further decreases with the addition of graphene oxide. The composite has also lowered the activation energy values which mean that incorporation of GO in PEO has decreased crystallinity and the amorphous region has increased the local mobility of polymer chains resulting in lower activation energies. SEM analysis shows uniform distribution of GO in polymer matrix. The thermal stability studies reveal that incorporation of GO has somewhat enhanced the thermal stability of the films.

Oxidized calmodulin kinase II regulates conduction following myocardial infarction: a computational analysis.

Directory of Open Access Journals (Sweden)

Matthew D Christensen

2009-12-01

Full Text Available Calmodulin kinase II (CaMKII mediates critical signaling pathways responsible for divergent functions in the heart including calcium cycling, hypertrophy and apoptosis. Dysfunction in the CaMKII signaling pathway occurs in heart disease and is associated with increased susceptibility to life-threatening arrhythmia. Furthermore, CaMKII inhibition prevents cardiac arrhythmia and improves heart function following myocardial infarction. Recently, a novel mechanism for oxidative CaMKII activation was discovered in the heart. Here, we provide the first report of CaMKII oxidation state in a well-validated, large-animal model of heart disease. Specifically, we observe increased levels of oxidized CaMKII in the infarct border zone (BZ. These unexpected new data identify an alternative activation pathway for CaMKII in common cardiovascular disease. To study the role of oxidation-dependent CaMKII activation in creating a pro-arrhythmia substrate following myocardial infarction, we developed a new mathematical model of CaMKII activity including both oxidative and autophosphorylation activation pathways. Computer simulations using a multicellular mathematical model of the cardiac fiber demonstrate that enhanced CaMKII activity in the infarct BZ, due primarily to increased oxidation, is associated with reduced conduction velocity, increased effective refractory period, and increased susceptibility to formation of conduction block at the BZ margin, a prerequisite for reentry. Furthermore, our model predicts that CaMKII inhibition improves conduction and reduces refractoriness in the BZ, thereby reducing vulnerability to conduction block and reentry. These results identify a novel oxidation-dependent pathway for CaMKII activation in the infarct BZ that may be an effective therapeutic target for improving conduction and reducing heterogeneity in the infarcted heart.

Cu-Ag core–shell nanoparticles with enhanced oxidation stability for printed electronics

International Nuclear Information System (INIS)

Lee, Changsoo; Kim, Na Rae; Koo, Jahyun; Lee, Yung Jong; Lee, Hyuck Mo

2015-01-01

In this work, we synthesized uniform Cu–Ag core–shell nanoparticles using a facile two-step process that consists of thermal decomposition and galvanic displacement methods. The core–shell structure of these nanoparticles was confirmed through characterization using transmission electron microscopy, energy-dispersive spectroscopy, and x-ray diffraction. Furthermore, we investigated the oxidation stability of the Cu–Ag core–shell nanoparticles in detail. Both qualitative and quantitative x-ray photoelectron spectroscopy analyses confirm that the Cu–Ag core–shell nanoparticles have considerably higher oxidation stability than Cu nanoparticles. Finally, we formulated a conductive ink using the synthesized nanoparticles and coated it onto glass substrates. Following the sintering process, we compared the resistivity of the Cu–Ag core–shell nanoparticles with that of the Cu nanoparticles. The results of this study clearly show that the Cu–Ag core–shell nanoparticles can potentially be used as an alternative to Ag nanoparticles because of their superior oxidation stability and electrical properties. (paper)

Electronic structure investigation of oxidized aluminium films with electron momentum spectroscopy

International Nuclear Information System (INIS)

Guo, X.; Canney, S.; Kheifets, A.S.; Vos, M.; Fang, Z.; Utteridge, S.; McCarthy, I.E.; Weigold, E.

1996-09-01

Electron momentum spectroscopy (EMS) of (e, 2e) measurements with oxidized aluminium thin films have been performed. Due to the surface sensitive mature of the EMS spectrometer employed the measured (e, 2e) events come from the front oxidized layer as viewed by the electron detectors. The measurements show clearly two major features in the spectral momentum density distribution and they are related to the upper valence band and the lower valence band of aluminum oxide. The first is a 'dual parabola' energy-momentum dispersion pattern spanning about 8 eV in the upper valence band. This 'dual parabola' pattern has been qualitatively reproduced by a linear muffin-tin orbital (LMTO) calculation on spherically averaged α-A1 2 O 3 with nearly the same energy span. In the lower valence band, the LMTO calculation indicates a dispersion spanning about 5 eV, and the measured spectral momentum density plot shows a similar 'bowl' shape but with less dispersion. The possible causes which blur the dispersion in the lower valence band are discussed. Other features in the spectral momentum density distribution are also discussed and compared with the LMTO calculation. 45 refs., 1 tab., 10 figs

Latest progress in gallium-oxide electronic devices

Science.gov (United States)

Higashiwaki, Masataka; Wong, Man Hoi; Konishi, Keita; Nakata, Yoshiaki; Lin, Chia-Hung; Kamimura, Takafumi; Ravikiran, Lingaparthi; Sasaki, Kohei; Goto, Ken; Takeyama, Akinori; Makino, Takahiro; Ohshima, Takeshi; Kuramata, Akito; Yamakoshi, Shigenobu; Murakami, Hisashi; Kumagai, Yoshinao

2018-02-01

Gallium oxide (Ga2O3) has emerged as a new competitor to SiC and GaN in the race toward next-generation power switching and harsh environment electronics by virtue of the excellent material properties and the relative ease of mass wafer production. In this proceedings paper, an overview of our recent development progress of Ga2O3 metal-oxide-semiconductor field-effect transistors and Schottky barrier diodes will be reported.

Electrochemical supercapacitors of cobalt hydroxide nanoplates grown on conducting cadmium oxide base-electrodes

Directory of Open Access Journals (Sweden)

Kailas K. Tehare

2017-05-01

Full Text Available Dopant-free and cost-effective sprayed cadmium oxide (CdO conducting base-electrodes, obtained at different concentrations (0.5, 1 and 1.5 M, characterized for their structures, morphologies and conductivities by using X-ray diffraction, scanning electron microscopy and electrical conductivity measurements, respectively, are employed as base-electrodes for growing cobalt hydroxide (Co(OH2 nanoplates using a simple electrodeposition method which further are envisaged for electrochemical supercapacitor application. Polycrystalline nature and mushroom-like plane-views are confirmed from the structure and morphology analyses. Both CdO and CdO–Co(OH2 electrodes reveal specific capacitances as high as 312 F g−1 and 1119 F g−1, respectively, in 0.1 M KOH electrolyte at 10 mV s−1 sweep rate. Optimized Co(OH2–CdO configuration electrode demonstrates energy density of 98.83 W h kg−1 and power density of 0.75 kW kg−1. In order to investigate the charge transfer kinematics electrochemical impedance measurements are carried out and explored.

Structural changes in graphene oxide thin film by electron-beam irradiation

Energy Technology Data Exchange (ETDEWEB)

Tyagi, Chetna, E-mail: tchetna91@gmail.com [Materials Science Group, Inter University Accelerator Centre, New Delhi 67 (India); Lakshmi, G.B.V.S.; Kumar, Sunil; Tripathi, Ambuj [Materials Science Group, Inter University Accelerator Centre, New Delhi 67 (India); Avasthi, D.K. [Amity University, Noida 201313, Uttar Pradesh (India)

2016-07-15

Although we have a whole class of 2D materials, graphene has drawn much attention for its excellent electronic, optical, thermal and mechanical properties. Recent researches have shown its large scale production by the reduction of graphene oxide either thermally, chemically or electrochemically. Although the structure of graphene oxide is inhomogeneous and hence complicated due to the presence of organic moieties e.g. epoxy, carboxylic acid, hydroxyl groups etc., its properties can be tuned by reduction according to desired application. The aim of this work is to synthesize continuous thin film of graphene oxide using commercially available graphene oxide solution and to study its reduction by 25 keV electron beam irradiation at fluences varying from 2 × 10{sup 11} to 2 × 10{sup 13} e{sup −}/cm{sup 2}. Our studies using X-ray diffraction, Raman microscopy and UV–Vis spectroscopy showed that electron-beam irradiation is an effective tool for reduction of graphene oxide and for tuning its band gap.

Temperature Dependence of the Spin-Hall Conductivity of a Two-Dimensional Impure Rashba Electron Gas in the Presence of Electron-Phonon and Electron-Electron Interactions

Science.gov (United States)

Yavari, H.; Mokhtari, M.; Bayervand, A.

2015-03-01

Based on Kubo's linear response formalism, temperature dependence of the spin-Hall conductivity of a two-dimensional impure (magnetic and nonmagnetic impurities) Rashba electron gas in the presence of electron-electron and electron-phonon interactions is analyzed theoretically. We will show that the temperature dependence of the spin-Hall conductivity is determined by the relaxation rates due to these interactions. At low temperature, the elastic lifetimes ( and are determined by magnetic and nonmagnetic impurity concentrations which are independent of the temperature, while the inelastic lifetimes ( and related to the electron-electron and electron-phonon interactions, decrease when the temperature increases. We will also show that since the spin-Hall conductivity is sensitive to temperature, we can distinguish the intrinsic and extrinsic contributions.

The iron and cerium oxide influence on the electric conductivity and the corrosion resistance of anodized aluminium

International Nuclear Information System (INIS)

Souza, Kellie Provazi de

2006-01-01

The influence of different treatments on the aluminum system covered with aluminum oxide is investigated. The aluminum anodization in sulphuric media and in mixed sulphuric and phosphoric media was used to alter the corrosion resistance, thickness, coverage degree and microhardness of the anodic oxide. Iron electrodeposition inside the anodic oxide was used to change its electric conductivity and corrosion resistance. Direct and pulsed current were used for iron electrodeposition and the Fe(SO 4 ) 2 (NH 4 ) 2 .6H 2 O electrolyte composition was changed with the addition of boric and ascorbic acids. To the sealing treatment the CeCl 3 composition was varied. The energy dispersive x-ray (EDS), the x-ray fluorescence spectroscopy (FRX) and the morphologic analysis by scanning electronic microscopy (SEM) allowed to verify that, the pulsed current increase the iron content inside the anodic layer and that the use of the additives inhibits the iron oxidation. The chronopotentiometric curves obtained during iron electrodeposition indicated that the boric and ascorbic acids mixture increased the electrodeposition process efficiency. The electrochemical impedance spectroscopy (EIE), the Vickers (Hv) microhardness measurements and morphologic analysis evidenced that the sealing treatment improves the corrosion resistance of the anodic film modified with iron. The electrical impedance (EI) technique allowed to prove the electric conductivity increase of the anodized aluminum with iron electrodeposited even after the cerium low concentration treatment. Iron nanowires were prepared by using the anodic oxide pores as template. (author)

Room temperature Compton profiles of conduction electrons in α-Ga ...

Indian Academy of Sciences (India)

Room temperature Compton profiles of momentum distribution of conduction electrons in -Ga metal are calculated in band model. For this purpose, the conduction electron wave functions are determined in a temperature-dependent non-local model potential. The profiles calculated along the crystallographic directions, ...

Conduction mechanism studies on electron transfer of disordered system

Institute of Scientific and Technical Information of China (English)

徐慧; 宋祎璞; 李新梅

2002-01-01

Using the negative eigenvalue theory and the infinite order perturbation theory, a new method was developed to solve the eigenvectors of disordered systems. The result shows that eigenvectors change from the extended state to the localized state with the increase of the site points and the disordered degree of the system. When electric field is exerted, the electrons transfer from one localized state to another one. The conductivity is induced by the electron transfer. The authors derive the formula of electron conductivity and find the electron hops between localized states whose energies are close to each other, whereas localized positions differ from each other greatly. At low temperature the disordered system has the character of the negative differential dependence of resistivity and temperature.

Tantalum surface oxidation: Bond relaxation, energy entrapment, and electron polarization

Energy Technology Data Exchange (ETDEWEB)

Guo, Yongling [Key Laboratory of Low-Dimensional Materials and Application Technologies (Ministry of Education), Hunan Provincial Key Laboratory of Thin Film Materials and Devices, Faculty of Materials Science and Engineering, Xiangtan University, Hunan 411105 (China); Bo, Maolin [Yangtze Normal University, College of Mechanical and Electrical Engineering, Chongqing 408100 (China); Wang, Yan [School of Information and Electronic Engineering, Hunan University of Science and Technology, Hunan 411201 (China); Liu, Yonghui [Key Laboratory of Low-Dimensional Materials and Application Technologies (Ministry of Education), Hunan Provincial Key Laboratory of Thin Film Materials and Devices, Faculty of Materials Science and Engineering, Xiangtan University, Hunan 411105 (China); Sun, Chang Q. [NOVITAS, School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798 (Singapore); Huang, Yongli, E-mail: huangyongli@xtu.edu.cn [Key Laboratory of Low-Dimensional Materials and Application Technologies (Ministry of Education), Hunan Provincial Key Laboratory of Thin Film Materials and Devices, Faculty of Materials Science and Engineering, Xiangtan University, Hunan 411105 (China)

2017-02-28

Graphical abstract: The bond, electron and energy relaxation result in core level energy shift, local densification, quantum entrapment and electron polarization of bonding electrons. - Highlights: • Increasing the oxygen coverage lowers the adsorption energy associated with lattice reconstruction. • Electrons transfer from Ta surface atoms to sp-hydrated oxygen, creating dipole moment that decreases the work function. • Oxygen chemisorption modified valence density-of-state (DOS) for Ta with four excessive DOS features: O−Ta bonding, O{sup 2−} lone pairs, Ta+ electron holes, and the lone-pair polarized Ta dipoles. • The bond, electron and energy relaxation between surface undercoordinated atoms are responsible for core level energy shift, local densification, quantum entrapment and electron polarization of bonding electrons. - Abstract: A combination of photoelectron spectrometric analysis and density functional theory calculations has enabled reconciliation of the bond-energy-electron relaxation for the Ta(100, 110, 111) surfaces chemisorbed with oxygen at different coverages. Results show that increasing oxygen coverage lowers the adsorption energy associated with lattice reconstruction. Valence electrons transfer from Ta surface atoms to oxygen to create four excessive DOS features in terms of O−Ta bonding, lone pairs of oxygen, Ta{sup +} electron holes, and polarized Ta dipoles. Oxidation proceeds in the following dynamics: oxygen gets electrons from two neighboring Ta atoms left behind Ta{sup +}; the sp{sup 3}-orbital hybridization takes place with additional two electron lone pairs, the lone pairs polarize the other two Ta neighbors becoming dipoles. X-ray photoelectron spectral analysis results in the 4f binding energy of an isolated Ta atom and its shift upon bond formation and oxidation. Exercises provide not only a promising numerical approach for the quantitative information about the bond and electronic behavior but also consistent

Tantalum surface oxidation: Bond relaxation, energy entrapment, and electron polarization

International Nuclear Information System (INIS)

Guo, Yongling; Bo, Maolin; Wang, Yan; Liu, Yonghui; Sun, Chang Q.; Huang, Yongli

2017-01-01

Graphical abstract: The bond, electron and energy relaxation result in core level energy shift, local densification, quantum entrapment and electron polarization of bonding electrons. - Highlights: • Increasing the oxygen coverage lowers the adsorption energy associated with lattice reconstruction. • Electrons transfer from Ta surface atoms to sp-hydrated oxygen, creating dipole moment that decreases the work function. • Oxygen chemisorption modified valence density-of-state (DOS) for Ta with four excessive DOS features: O−Ta bonding, O"2"− lone pairs, Ta+ electron holes, and the lone-pair polarized Ta dipoles. • The bond, electron and energy relaxation between surface undercoordinated atoms are responsible for core level energy shift, local densification, quantum entrapment and electron polarization of bonding electrons. - Abstract: A combination of photoelectron spectrometric analysis and density functional theory calculations has enabled reconciliation of the bond-energy-electron relaxation for the Ta(100, 110, 111) surfaces chemisorbed with oxygen at different coverages. Results show that increasing oxygen coverage lowers the adsorption energy associated with lattice reconstruction. Valence electrons transfer from Ta surface atoms to oxygen to create four excessive DOS features in terms of O−Ta bonding, lone pairs of oxygen, Ta"+ electron holes, and polarized Ta dipoles. Oxidation proceeds in the following dynamics: oxygen gets electrons from two neighboring Ta atoms left behind Ta"+; the sp"3-orbital hybridization takes place with additional two electron lone pairs, the lone pairs polarize the other two Ta neighbors becoming dipoles. X-ray photoelectron spectral analysis results in the 4f binding energy of an isolated Ta atom and its shift upon bond formation and oxidation. Exercises provide not only a promising numerical approach for the quantitative information about the bond and electronic behavior but also consistent insight into the

Oxide-cathode activation and surface temperature calculation of electron cooler

International Nuclear Information System (INIS)

Li Jie; Yang Xiaodong; Mao Lijun; Li Guohong; Yuan Youjin; Liu Zhanwen; Zhang Junhui; Yang Xiaotian; Ma Xiaoming; Yan Tailai

2011-01-01

The pollution on electron gun ceramic insulation of electron cooler restricted the operation of electron cooler at HIRFL-CSR main ring. To cool and accumulate ion beam well, the pollution was cleared and a new oxide-coated cathode was assembled. The processes of cathode replacement,vacuum chamber baking-out, and thermal decomposition of coating binders and alkaline earth metal carbonates, and cathode activation are presented. The electron gun perveance of 10.6 μA/V 1.5 was attained under the heating power of 60 W. The typical surface temperature of oxide-coated cathode that is calculated through grey-body radiation is 1 108 K which shows a comparable result to the experimental measurement 1 078 K. The perveance growth of electron gun during the electron cooler operation is also explained by partial activation of the cathode. (authors)

Importance of conduction electron correlation in a Kondo lattice, Ce₂CoSi₃.

Science.gov (United States)

Patil, Swapnil; Pandey, Sudhir K; Medicherla, V R R; Singh, R S; Bindu, R; Sampathkumaran, E V; Maiti, Kalobaran

2010-06-30

Kondo systems are usually described by the interaction of the correlation induced local moments with the highly itinerant conduction electrons. Here, we study the role of electron correlations among conduction electrons in the electronic structure of a Kondo lattice compound, Ce₂CoSi₃, using high resolution photoemission spectroscopy and ab initio band structure calculations, where Co 3d electrons contribute in the conduction band. High energy resolution employed in the measurements helped to reveal the signatures of Ce 4f states derived Kondo resonance features at the Fermi level and the dominance of Co 3d contributions at higher binding energies in the conduction band. The lineshape of the experimental Co 3d band is found to be significantly different from that obtained from the band structure calculations within the local density approximations, LDA. Consideration of electron-electron Coulomb repulsion, U, among Co 3d electrons within the LDA + U method leads to a better representation of experimental results. The signature of an electron correlation induced satellite feature is also observed in the Co 2p core level spectrum. These results clearly demonstrate the importance of the electron correlation among conduction electrons in deriving the microscopic description of such Kondo systems.

Paramagnetic resonance and electronic conduction in organic semiconductors; Resonance paramagnetique et conduction electroniques dans les semi-conducteurs organiques

Energy Technology Data Exchange (ETDEWEB)

Nechtschein, M. [Commissariat a l' energie atomique et aux energies alternatives - CEA, Laboratoire de Resonance Magnetique (France)

1963-07-01

As some organic bodies simultaneously display semi-conducting properties and a paramagnetism, this report addresses the study of conduction in organic bodies. The author first briefly recalls how relationships between conductibility and Electron Paramagnetic Resonance (EPR) can be noticed in a specific case (mineral and metallic semiconductors). He discusses published results related to paramagnetism and conductibility in organic bodies. He reviews various categories of organic bodies in which both properties are simultaneously present. He notably addresses radical molecular crystals, non-radical molecular crystals, charge transfer complexes, pyrolyzed coals, and pseudo-ferromagnetic organic structures. He discusses the issue of relationships between conduction (charge transfer by electrons) and ERP (which reveals the existence of non-paired electrons which provide free spins)

Lateral protonic/electronic hybrid oxide thin-film transistor gated by SiO{sub 2} nanogranular films

Energy Technology Data Exchange (ETDEWEB)

Zhu, Li Qiang, E-mail: lqzhu@nimte.ac.cn; Chao, Jin Yu; Xiao, Hui [Ningbo Institute of Material Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201 (China)

2014-12-15

Ionic/electronic interaction offers an additional dimension in the recent advancements of condensed materials. Here, lateral gate control of conductivities of indium-zinc-oxide (IZO) films is reported. An electric-double-layer (EDL) transistor configuration was utilized with a phosphorous-doped SiO{sub 2} nanogranular film to provide a strong lateral electric field. Due to the strong lateral protonic/electronic interfacial coupling effect, the IZO EDL transistor could operate at a low-voltage of 1 V. A resistor-loaded inverter is built, showing a high voltage gain of ∼8 at a low supply voltage of 1 V. The lateral ionic/electronic coupling effects are interesting for bioelectronics and portable electronics.

The electronic structure and metal-insulator transitions in vanadium oxides

International Nuclear Information System (INIS)

Mossanek, Rodrigo Jose Ochekoski

2010-01-01

The electronic structure and metal-insulator transitions in vanadium oxides (SrVO_3, CaVO_3, LaVO_3 and YVO_3) are studied here. The purpose is to show a new interpretation to the spectra which is coherent with the changes across the metal-insulator transition. The main experimental techniques are the X-ray photoemission (PES) and X-ray absorption (XAS) spectroscopies. The spectra are interpreted with cluster model, band structure and atomic multiplet calculations. The presence of charge-transfer satellites in the core-level PES spectra showed that these vanadium oxides cannot be classified in the Mott-Hubbard regime. Further, the valence band and core-level spectra presented a similar behavior across the metal insulator transition. In fact, the structures in the spectra and their changes are determined by the different screening channels present in the metallic or insulating phases. The calculated spectral weight showed that the coherent fluctuations dominate the spectra at the Fermi level and give the metallic character to the SrVO_3 and CaVO_3 compounds. The vanishing of this charge fluctuation and the replacement by the Mott-Hubbard screening in the LaVO_3 and YVO_3 systems is ultimately responsible for the opening of a band gap and the insulating character. Further, the correlation effects are, indeed, important to the occupied electronic structure (coherent and incoherent peaks). On the other hand, the unoccupied electronic structure is dominated by exchange and crystal field effects (t2g and eg sub-bands of majority and minority spins). The optical conductivity spectrum was obtained by convoluting the removal and addition states. It showed that the oxygen states, as well as the crystal field and exchange effects are necessary to correctly compare and interpret the experimental results. Further, a correlation at the charge-transfer region of the core-level and valence band optical spectra was observed, which could be extended to other transition metal oxides

Lipase immobilized on nanostructured cerium oxide thin film coated on transparent conducting oxide electrode for butyrin sensing

Energy Technology Data Exchange (ETDEWEB)

Panky, Sreedevi; Thandavan, Kavitha [Centre for Nanotechnology and Advanced Biomaterials (CeNTAB), SASTRA University, Thanjavur 613 401, Tamil Nadu (India); School of Chemical and Biotechnology, SASTRA University, Thanjavur 613 401, Tamil Nadu (India); Sivalingam, Durgajanani [Centre for Nanotechnology and Advanced Biomaterials (CeNTAB), SASTRA University, Thanjavur 613 401, Tamil Nadu (India); School of Electrical and Electronics Engineering, SASTRA University, Thanjavur 613 401, Tamil Nadu (India); Sethuraman, Swaminathan; Krishnan, Uma Maheswari [Centre for Nanotechnology and Advanced Biomaterials (CeNTAB), SASTRA University, Thanjavur 613 401, Tamil Nadu (India); School of Chemical and Biotechnology, SASTRA University, Thanjavur 613 401, Tamil Nadu (India); Jeyaprakash, Beri Gopalakrishnan [Centre for Nanotechnology and Advanced Biomaterials (CeNTAB), SASTRA University, Thanjavur 613 401, Tamil Nadu (India); School of Electrical and Electronics Engineering, SASTRA University, Thanjavur 613 401, Tamil Nadu (India); Rayappan, John Bosco Balaguru, E-mail: rjbosco@ece.sastra.edu [Centre for Nanotechnology and Advanced Biomaterials (CeNTAB), SASTRA University, Thanjavur 613 401, Tamil Nadu (India); School of Electrical and Electronics Engineering, SASTRA University, Thanjavur 613 401, Tamil Nadu (India)

2013-01-15

Nanostructured cerium oxide (CeO{sub 2}) thin films were deposited on transparent conducting oxide (TCO) substrate using spray pyrolysis technique with cerium nitrate salt, Ce(NO{sub 3}){sub 3}{center_dot}6H{sub 2}O as precursor. Fluorine doped cadmium oxide (CdO:F) thin film prepared using spray pyrolysis technique acts as the TCO film and hence the bare electrode. The structural, morphological and elemental characterizations of the films were carried out using X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM) and energy dispersive X-ray analysis (EDX) respectively. The diffraction peak positions in XRD confirmed the formation of highly crystalline ceria with cubic structure and FE-SEM images showed uniform adherent films with granular morphology. The band gaps of CeO{sub 2} and TCO were found to be 3.2 eV and 2.6 eV respectively. Lipase enzyme was physisorbed on the surface of CeO{sub 2}/TCO film to form the lipase/nano-CeO{sub 2}/TCO bioelectrode. Sensing studies were carried out using cyclic voltammetry and amperometry, with lipase/nano-CeO{sub 2}/TCO as working electrode and tributyrin as substrate. The mediator-free biosensor with nanointerface exhibited excellent linearity (0.33-1.98 mM) with a lowest detection limit of 2 {mu}M with sharp response time of 5 s and a shelf life of about 6 weeks. -- Graphical abstract: Nanostructured cerium oxide thin films were deposited on transparent conducting oxide (TCO) substrate using spray pyrolysis technique. Fluorine doped cadmium oxide (CdO:F) thin film acts as the TCO film and hence the working electrode. Lipase enzyme was physisorbed on the surface of CeO{sub 2}/TCO film and hence the lipase/nano-CeO{sub 2}/TCO bioelectrode has been fabricated. Sensing studies were carried out using cyclic voltammetry and amperometry with tributyrin as substrate. The mediator-free biosensor with nanointerface exhibited excellent linearity (0.33-1.98 mM) with a lowest detection limit of 2 {mu}M with sharp

p-Type Transparent Conducting Oxide/n-Type Semiconductor Heterojunctions for Efficient and Stable Solar Water Oxidation.

Science.gov (United States)

Chen, Le; Yang, Jinhui; Klaus, Shannon; Lee, Lyman J; Woods-Robinson, Rachel; Ma, Jie; Lum, Yanwei; Cooper, Jason K; Toma, Francesca M; Wang, Lin-Wang; Sharp, Ian D; Bell, Alexis T; Ager, Joel W

2015-08-05

Achieving stable operation of photoanodes used as components of solar water splitting devices is critical to realizing the promise of this renewable energy technology. It is shown that p-type transparent conducting oxides (p-TCOs) can function both as a selective hole contact and corrosion protection layer for photoanodes used in light-driven water oxidation. Using NiCo2O4 as the p-TCO and n-type Si as a prototypical light absorber, a rectifying heterojunction capable of light driven water oxidation was created. By placing the charge separating junction in the Si using a np(+) structure and by incorporating a highly active heterogeneous Ni-Fe oxygen evolution catalyst, efficient light-driven water oxidation can be achieved. In this structure, oxygen evolution under AM1.5G illumination occurs at 0.95 V vs RHE, and the current density at the reversible potential for water oxidation (1.23 V vs RHE) is >25 mA cm(-2). Stable operation was confirmed by observing a constant current density over 72 h and by sensitive measurements of corrosion products in the electrolyte. In situ Raman spectroscopy was employed to investigate structural transformation of NiCo2O4 during electrochemical oxidation. The interface between the light absorber and p-TCO is crucial to produce selective hole conduction to the surface under illumination. For example, annealing to produce more crystalline NiCo2O4 produces only small changes in its hole conductivity, while a thicker SiOx layer is formed at the n-Si/p-NiCo2O4 interface, greatly reducing the PEC performance. The generality of the p-TCO protection approach is demonstrated by multihour, stable, water oxidation with n-InP/p-NiCo2O4 heterojunction photoanodes.

Electron Gas Dynamic Conductivity Tensor on the Nanotube Surface in Magnetic Field

Directory of Open Access Journals (Sweden)

A. M. Ermolaev

2011-01-01

Full Text Available Kubo formula was derived for the electron gas conductivity tensor on the nanotube surface in longitudinal magnetic field considering spatial and time dispersion. Components of the degenerate and nondegenerate electron gas conductivity tensor were calculated. The study has showed that under high electron density, the conductivity undergoes oscillations of de Haas-van Alphen and Aharonov-Bohm types with the density of electrons and magnetic field changes.

Measurement and modelling of the defect chemistry and transport properties of ceramic oxide mixed ionic and electronic conductors

DEFF Research Database (Denmark)

Dalslet, Bjarke Thomas

2008-01-01

The subject of this thesis is ceramic mixed ionic and electronic conductors (MIECs). MIECs have potential uses, such as solid oxygen permeation membranes, as catalysts, and as components in fuel cells. The MIECs examined in this thesis are all oxide ion conducting materials. This thesis describes...

Design and fabrication of polymeric nanocomposites with conducting fillers as electronic nanomaterials

Science.gov (United States)

Mushibe, Eliud Kizito

The growing demand for small, portable and high performance electronic devices has resulted in research activity for embedded electronic components. This offers prospects for the development of flexible electronic components that combines the use of organic and inorganic materials and can be produced on a roll-to-roll process. This dissertation presents advances in the fabrication and characterization of flexible polymeric nanocomposite thin films. Inorganic and synthetic metal nanostructures with high electrical and dielectric properties were employed as filler materials. The processability of these functional filler materials was achieved by dispersion in conventional polymer matrices such as polystyrene (PS), polymethylmethacrylate (PMMA) and poly(vinylidene fluoride) to afford electroactive polymeric composite materials. In the fabrication of inorganic nanostructures, a Tubes by Fiber Template technique was employed to afford submicron metal and metal oxide tubes. Silver and copper nanostructures were fabricated by electroless deposition on electrospun fiber templates. To obtain hollow, submicron tubes, the sacrificial polymer template materials were removed by a combination of solvent dissolution and thermal degradation under an inert atmosphere. Polyaniline thin film deposited on the fiber template was used as a binding interface to enhance uniform and continuous deposition of the metal. This was instrumental in fabricating tubes with varied wall thicknesses ranging from 50 to 300 nm obtained as a function of plating time. By doping electrically conducting polymers such as polyaniline, the conductivity can be modified. We describe the fabrication of highly conducting polyaniline nanostructures via template free synthesis. A novel approach that involves a combination of hydrochloric acid and camphorsulfonic acid dopant at low concentrations was adopted. This approach afforded nanofibers with diameters of 150 ± 50 nm and high electrical conductivity of 4.2 �

A comparison between different oxide dispersion strengthened ferritic steel ongoing in situ oxide dissolution in High Voltage Electron Microscope

International Nuclear Information System (INIS)

Monnet, I.; Van den Berghe, T.; Dubuisson, Ph.

2012-01-01

ODS materials are considered for nuclear applications but previous experimental studies have shown a partial dissolution of some oxides under neutron irradiation. In this work, electron irradiations were used to evaluate the stability of the oxides depending on the chemical composition of the oxide dispersion. Four ferritic steels based on EM10 (Fe–9Cr–1Mo) and reinforced respectively by Al 2 O 3 , MgO, MgAl 2 O 4 and Y 2 O 3 , were studied. These materials were irradiated with 1 MeV or 1.2 MeV electrons in a High Voltage Electron Microscope. This technique allows to follow one single oxide and to determine the evolution of its size during the irradiation. In situ HVEM observations indicate that the dissolution rate depends on the chemical composition of the oxide, on the temperature and on the irradiation dose.

Interstitial pressure dependence of the thermal conductivity of some rare earth oxide powders

International Nuclear Information System (INIS)

Pradeep, P.

1997-01-01

Thermal transport properties of powdered materials depend upon interstitial gas pressure. The present study reports the experimental results for the effective thermal conductivity of three rare earth oxide powders viz. yttrium oxide, samarium oxide, and gadolinium oxide, at various interstitial pressures by using transient plane source (TPS) method. A theoretical model is also proposed for the interpretation of the variation of the effective thermal conductivity with interstitial gas pressure. Its validity is found to be good in low pressure range of 45 mm Hg to normal pressure when compared with the experimental results. Also an attempt has been made to calculate the variation of thermal conductivity with interstitial pressure in the high pressure range up to 2 kbar using the proposed model. (author)

Copper:molybdenum sub-oxide blend as transparent conductive electrode (TCE) indium free

Science.gov (United States)

Hssein, Mehdi; Cattin, Linda; Morsli, Mustapha; Addou, Mohammed; Bernède, Jean-Christian

2016-05-01

Oxide/metal/oxide structures have been shown to be promising alternatives to ITO. In such structures, in order to decrease the high light reflection of the metal film it is embedded between two metal oxides dielectric. MoO3-x is often used as oxide due to its capacity to be a performing anode buffer layer in organic solar cells, while silver is the metal the most often used [1]. Some attempts to use cheaper metal such as copper have been done. However it was shown that Cu diffuses strongly into MoO3-x [2]. Here we used this property to grow simple new transparent conductive oxide (TCE), i.e., Cu: MoO3-x blend. After the deposition of a thin Cu layer, a film of MoO3-x is deposited by sublimation. An XPS study shows more than 50% of Cu is present at the surface of the structure. In order to limit the Cu diffusion an ultra-thin Al layer is deposited onto MoO3-x. Then, in order to obtain a good hole collecting contact with the electron donor of the organic solar cells, a second MoO3-x layer is deposited. After optimization of the thickness of the different layers, the optimum structure is as follow: Cu (12 nm) : MoO3-x (20 nm)/Al (0.5 nm)/ MoO3-x (10 nm). The sheet resistance of this structure is Rsq = 5.2 Ω/sq. and its transmittance is Tmax = 65%. The factor of merit ϕM = T10/Rsq. = 2.41 × 10-3 Ω-1, which made this new TCE promising as anode in organic solar cells. Contribution to the topical issue "Materials for Energy Harvesting, Conversion and Storage (ICOME 2015) - Elected submissions", edited by Jean-Michel Nunzi, Rachid Bennacer and Mohammed El Ganaoui

Metal-insulator transition in tin doped indium oxide (ITO thin films: Quantum correction to the electrical conductivity

Directory of Open Access Journals (Sweden)

Deepak Kumar Kaushik

2017-01-01

Full Text Available Tin doped indium oxide (ITO thin films are being used extensively as transparent conductors in several applications. In the present communication, we report the electrical transport in DC magnetron sputtered ITO thin films (prepared at 300 K and subsequently annealed at 673 K in vacuum for 60 minutes in low temperatures (25-300 K. The low temperature Hall effect and resistivity measurements reveal that the ITO thin films are moderately dis-ordered (kFl∼1; kF is the Fermi wave vector and l is the electron mean free path and degenerate semiconductors. The transport of charge carriers (electrons in these disordered ITO thin films takes place via the de-localized states. The disorder effects lead to the well-known ‘metal-insulator transition’ (MIT which is observed at 110 K in these ITO thin films. The MIT in ITO thin films is explained by the quantum correction to the conductivity (QCC; this approach is based on the inclusion of quantum-mechanical interference effects in Boltzmann’s expression of the conductivity of the disordered systems. The insulating behaviour observed in ITO thin films below the MIT temperature is attributed to the combined effect of the weak localization and the electron-electron interactions.

Metal-insulator transition in tin doped indium oxide (ITO) thin films: Quantum correction to the electrical conductivity

Science.gov (United States)

Kaushik, Deepak Kumar; Kumar, K. Uday; Subrahmanyam, A.

2017-01-01

Tin doped indium oxide (ITO) thin films are being used extensively as transparent conductors in several applications. In the present communication, we report the electrical transport in DC magnetron sputtered ITO thin films (prepared at 300 K and subsequently annealed at 673 K in vacuum for 60 minutes) in low temperatures (25-300 K). The low temperature Hall effect and resistivity measurements reveal that the ITO thin films are moderately dis-ordered (kFl˜1; kF is the Fermi wave vector and l is the electron mean free path) and degenerate semiconductors. The transport of charge carriers (electrons) in these disordered ITO thin films takes place via the de-localized states. The disorder effects lead to the well-known `metal-insulator transition' (MIT) which is observed at 110 K in these ITO thin films. The MIT in ITO thin films is explained by the quantum correction to the conductivity (QCC); this approach is based on the inclusion of quantum-mechanical interference effects in Boltzmann's expression of the conductivity of the disordered systems. The insulating behaviour observed in ITO thin films below the MIT temperature is attributed to the combined effect of the weak localization and the electron-electron interactions.

A stretchable and screen-printable conductive ink for stretchable electronics

Science.gov (United States)

Mohammed, Anwar; Pecht, Michael

2016-10-01

Stretchable electronics can offer an added degree of design freedom and generate products with unprecedented capabilities. Stretchable conductive ink serving as interconnect, is a key enabler for stretchable electronics. This paper focuses on the development of a stretchable and screen printable conductive ink which could be stretched more than 500 cycles at 20% strain while maintaining electrical and mechanical integrity. The screen printable and stretchable conductive ink developed in this paper marks an important milestone for this nascent technology.

Oxide bipolar electronics: materials, devices and circuits

International Nuclear Information System (INIS)

Grundmann, Marius; Klüpfel, Fabian; Karsthof, Robert; Schlupp, Peter; Schein, Friedrich-Leonhard; Splith, Daniel; Yang, Chang; Bitter, Sofie; Von Wenckstern, Holger

2016-01-01

We present the history of, and the latest progress in, the field of bipolar oxide thin film devices. As such we consider primarily pn-junctions in which at least one of the materials is a metal oxide semiconductor. A wide range of n-type and p-type oxides has been explored for the formation of such bipolar diodes. Since most oxide semiconductors are unipolar, challenges and opportunities exist with regard to the formation of heterojunction diodes and band lineups. Recently, various approaches have led to devices with high rectification, namely p-type ZnCo 2 O 4 and NiO on n-type ZnO and amorphous zinc-tin-oxide. Subsequent bipolar devices and applications such as photodetectors, solar cells, junction field-effect transistors and integrated circuits like inverters and ring oscillators are discussed. The tremendous progress shows that bipolar oxide electronics has evolved from the exploration of various materials and heterostructures to the demonstration of functioning integrated circuits. Therefore a viable, facile and high performance technology is ready for further exploitation and performance optimization. (topical review)

Cooperative electrocatalytic alcohol oxidation with electron-proton-transfer mediators

Science.gov (United States)

Badalyan, Artavazd; Stahl, Shannon S.

2016-07-01

The electrochemical oxidation of alcohols is a major focus of energy and chemical conversion efforts, with potential applications ranging from fuel cells to biomass utilization and fine-chemical synthesis. Small-molecule electrocatalysts for processes of this type are promising targets for further development, as demonstrated by recent advances in nickel catalysts for electrochemical production and oxidation of hydrogen. Complexes with tethered amines that resemble the active site of hydrogenases have been shown both to catalyse hydrogen production (from protons and electrons) with rates far exceeding those of such enzymes and to mediate reversible electrocatalytic hydrogen production and oxidation with enzyme-like performance. Progress in electrocatalytic alcohol oxidation has been more modest. Nickel complexes similar to those used for hydrogen oxidation have been shown to mediate efficient electrochemical oxidation of benzyl alcohol, with a turnover frequency of 2.1 per second. These compounds exhibit poor reactivity with ethanol and methanol, however. Organic nitroxyls, such as TEMPO (2,2,6,6-tetramethyl-1-piperidine N-oxyl), are the most widely studied electrocatalysts for alcohol oxidation. These catalysts exhibit good activity (1-2 turnovers per second) with a wide range of alcohols and have great promise for electro-organic synthesis. Their use in energy-conversion applications, however, is limited by the high electrode potentials required to generate the reactive oxoammonium species. Here we report (2,2‧-bipyridine)Cu/nitroxyl co-catalyst systems for electrochemical alcohol oxidation that proceed with much faster rates, while operating at an electrode potential a half-volt lower than that used for the TEMPO-only process. The (2,2‧-bipyridine)Cu(II) and TEMPO redox partners exhibit cooperative reactivity and exploit the low-potential, proton-coupled TEMPO/TEMPOH redox process rather than the high-potential TEMPO/TEMPO+ process. The results show how

Titanium Oxide/Platinum Catalysis: Charge Transfer from a Titanium Oxide Support Controls Activity and Selectivity in Methanol Oxidation on Platinum

KAUST Repository

Hervier, Antoine

2011-11-24

Platinum films of 1 nm thickness were deposited by electron beam evaporation onto 100 nm thick titanium oxide films (TiOx) with variable oxygen vacancy concentrations and fluorine (F) doping. Methanol oxidation on the platinum films produced formaldehyde, methyl formate, and carbon dioxide. F-doped samples demonstrated significantly higher activity for methanol oxidation when the TiOx was stoichiometric (TiO 2), but lower activity when it was nonstoichiometric (TiO 1.7 and TiO1.9). These results correlate with the chemical behavior of the same types of catalysts in CO oxidation. Fluorine doping of stoichiometric TiO2 also increased selectivity toward partial oxidation of methanol to formaldehyde and methyl formate, but had an opposite effect in the case of nonstoichiometric TiOx. Introduction of oxygen vacancies and fluorine doping both increased the conductivity of the TiO x film. For oxygen vacancies, this occurred by the formation of a conduction channel in the band gap, whereas in the case of fluorine doping, F acted as an n-type donor, forming a conduction channel at the bottom of the conduction band, about 0.5-1.0 eV higher in energy. The higher energy electrons in F-doped stoichiometric TiOx led to higher turnover rates and increased selectivity toward partial oxidation of methanol. This correlation between electronic structure and turnover rate and selectivity indicates that the ability of the support to transfer charges to surface species controls in part the activity and selectivity of the reaction. © 2011 American Chemical Society.

Nanoroses of nickel oxides: Synthesis, electron tomography study, and application in CO oxidation and energy storage

KAUST Repository

Fihri, Aziz

2012-04-11

Nickel oxide and mixed-metal oxide structures were fabricated by using microwave irradiation in pure water. The nickel oxide self-assembled into unique rose-shaped nanostructures. These nickel oxide roses were studied by performing electron tomography with virtual cross-sections through the particles to understand their morphology from their interior to their surface. These materials exhibited promising performance as nanocatalysts for CO oxidation and in energy storage devices. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Effect of Samarium Oxide on the Electrical Conductivity of Plasma-Sprayed SOFC Anodes

Science.gov (United States)

Panahi, S. N.; Samadi, H.; Nemati, A.

2016-10-01

Solid oxide fuel cells (SOFCs) are rapidly becoming recognized as a new alternative to traditional energy conversion systems because of their high energy efficiency. From an ecological perspective, this environmentally friendly technology, which produces clean energy, is likely to be implemented more frequently in the future. However, the current SOFC technology still cannot meet the demands of commercial applications due to temperature constraints and high cost. To develop a marketable SOFC, suppliers have tended to reduce the operating temperatures by a few hundred degrees. The overall trend for SOFC materials is to reduce their service temperature of electrolyte. Meanwhile, it is important that the other components perform at the same temperature. Currently, the anodes of SOFCs are being studied in depth. Research has indicated that anodes based on a perovskite structure are a more promising candidate in SOFCs than the traditional system because they possess more favorable electrical properties. Among the perovskite-type oxides, SrTiO3 is one of the most promising compositions, with studies demonstrating that SrTiO3 exhibits particularly favorable electrical properties in contrast with other perovskite-type oxides. The main purpose of this article is to describe our study of the effect of rare-earth dopants with a perovskite structure on the electrical behavior of anodes in SOFCs. Sm2O3-doped SrTiO3 synthesized by a solid-state reaction was coated on substrate by atmospheric plasma spray. To compare the effect of the dopant on the electrical conductivity of strontium titanate, different concentrations of Sm2O3 were used. The samples were then investigated by x-ray diffraction, four-point probe at various temperatures (to determine the electrical conductivity), and a scanning electron microscope. The study showed that at room temperature, nondoped samples have a higher electrical resistance than doped samples. As the temperature was increased, the electrical

Electronic Structure Control of Tungsten Oxide Activated by Ni for Ultrahigh-Performance Supercapacitors.

Science.gov (United States)

Meng, Tian; Kou, Zongkui; Amiinu, Ibrahim Saana; Hong, Xufeng; Li, Qingwei; Tang, Yongfu; Zhao, Yufeng; Liu, Shaojun; Mai, Liqiang; Mu, Shichun

2018-04-17

Tuning the electron structure is of vital importance for designing high active electrode materials. Here, for boosting the capacitive performance of tungsten oxide, an atomic scale engineering approach to optimize the electronic structure of tungsten oxide by Ni doping is reported. Density functional theory calculations disclose that through Ni doping, the density of state at Fermi level for tungsten oxide can be enhanced, thus promoting its electron transfer. When used as electrode of supercapacitors, the obtained Ni-doped tungsten oxide with 4.21 at% Ni exhibits an ultrahigh mass-specific capacitance of 557 F g -1 at the current density of 1 A g -1 and preferable durability in a long-term cycle test. To the best of knowledge, this is the highest supercapacitor performance reported so far in tungsten oxide and its composites. The present strategy demonstrates the validity of the electronic structure control in tungsten oxide via introducing Ni atoms for pseudocapacitors, which can be extended to other related fields as well. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Effects of solid fission products forming dissolved oxide (Nd) and metallic precipitate (Ru) on the thermal conductivity of uranium base oxide fuel

International Nuclear Information System (INIS)

Kim, Dong-Joo; Yang, Jae-Ho; Kim, Jong-Hun; Rhee, Young-Woo; Kang, Ki-Won; Kim, Keon-Sik; Song, Kun-Woo

2007-01-01

The effects of solid fission products on the thermal conductivity of uranium base oxide nuclear fuel were experimentally investigated. Neodymium (Nd) and ruthenium (Ru) were added to represent the physical states of solid fission products such as 'dissolved oxide' and 'metallic precipitate', respectively. Thermal conductivity was determined on the basis of the thermal diffusivity, density and specific heat values. The effects of the additives on the thermal conductivity were quantified in the form of the thermal resistivity equation - the reciprocal of the phonon conduction equation - which was determined from the measured data. It is concluded that the thermal conductivity of the irradiated nuclear fuel is affected by both the 'dissolved oxide' and the 'metallic precipitate', however, the effects are in the opposite direction and the 'dissolved oxide' influences the thermal conductivity more significantly than that of the 'metallic precipitate'

Ultrafast electron and energy transfer in dye-sensitized iron oxide and oxyhydroxide nanoparticles

DEFF Research Database (Denmark)

Gilbert, Benjamin; Katz, Jordan E.; Huse, Nils

2013-01-01

photo-initiated interfacial electron transfer. This approach enables time-resolved study of the fate and mobility of electrons within the solid phase. However, complete analysis of the ultrafast processes following dye photoexcitation of the sensitized iron(iii) oxide nanoparticles has not been reported....... We addressed this topic by performing femtosecond transient absorption (TA) measurements of aqueous suspensions of uncoated and DCF-sensitized iron oxide and oxyhydroxide nanoparticles, and an aqueous iron(iii)–dye complex. Following light absorption, excited state relaxation times of the dye of 115...... a four-state model of the dye-sensitized system, finding electron and energy transfer to occur on the same ultrafast timescale. The interfacial electron transfer rates for iron oxides are very close to those previously reported for DCF-sensitized titanium dioxide (for which dye–oxide energy transfer...

Preparation of high surface area and high conductivity polyaniline nanoparticles using chemical oxidation polymerization technique

Science.gov (United States)

Budi, S.; Yusmaniar; Juliana, A.; Cahyana, U.; Purwanto, A.; Imaduddin, A.; Handoko, E.

2018-03-01

In this work, polyaniline nanoparticles were synthesized using a chemical oxidation polymerization technique. The ammonium peroxydisulfate (APS)/aniline ratio, APS dropping time, and polymerization temperature were optimized to increase the surface area and conductivity of the polyaniline.The Fourier-transform infrared (FTIR) spectrum confirmed the formation of emeraldine salt polyaniline. X-ray diffraction (XRD) patterns indicated that amorphous and crystalline phases of the polyaniline were formed with crystallinity less than 40%. Scanning electron microscope (SEM) micrographs showed that the finest nanoparticles with uniform size distribution were obtained at the polymerization temperature of 0°C. A surface area analyzer (SAA) showed that the highest Brunauer-Emmett-Teller surface area (SBET ) of 42.14 m2/gwas obtained from an APS/aniline ratio of 0.75 with a dropping time of 0 s at a polymerization temperature of 0°C. A four-point probe measurement conducted at 75–300K indicated relatively high conductivity of the semiconductor characteristic of the polyaniline.

Graphene oxide and reduced graphene oxide studied by the XRD, TEM and electron spectroscopy methods

International Nuclear Information System (INIS)

Stobinski, L.; Lesiak, B.; Malolepszy, A.; Mazurkiewicz, M.; Mierzwa, B.; Zemek, J.; Jiricek, P.; Bieloshapka, I.

2014-01-01

Highlights: • Graphene oxide (FL-GOc) and reduced graphene oxide (FL-RGOc): XRD, TEM, XPS, REELS. • FL-GOc: stacking nanostructure—22 × 6 nm (DxH), 0.9 nm layers separation (XRD). • FL-RGOc: stacking nanostructure—8 × 1 nm (DxH), 0.4 nm layers separation (XRD). • Reduction: oxygen group degradation, decreasing distance between graphene layers. • Number of graphene layers in stacking nanostructure: 6–7 (FL-GOc), 2–3 (FL-RGOc). - Abstract: The commercial and synthesised few-layer graphene oxide, prepared using oxidation reactions, and few-layer reduced graphene oxide samples were structurally and chemically investigated by the X-ray diffraction (XRD), transmission electron microscopy (TEM) and electron spectroscopy methods, i.e. X-ray photoelectron spectroscopy (XPS) and reflection electron energy loss spectroscopy (REELS). The commercial graphene oxide (FL-GOc) shows a stacking nanostructure of about 22 × 6 nm average diameter by height with the distance of 0.9 nm between 6-7 graphene layers, whereas the respective reduced graphene oxide (FL-RGOc)—about 8 × 1 nm average diameter by height stacking nanostructure with the distance of 0.4 nm between 2-3 graphene layers (XRD). The REELS results are consistent with those by the XRD indicating 8 (FL-GOc) and 4 layers (FL-RGOc). In graphene oxide and reduced graphene oxide prepared from the graphite the REELS indicates 8–11 and 7–10 layers. All graphene oxide samples show the C/O ratio of 2.1–2.3, 26.5–32.1 at% of C sp 3 bonds and high content of functional oxygen groups (hydroxyl—C-OH, epoxy—C-O-C, carbonyl—C=O, carboxyl—C-OOH, water) (XPS). Reduction increases the C/O ratio to 2.8–10.3, decreases C sp 3 content to 11.4–20.3 at% and also the content of C-O-C and C=O groups, accompanied by increasing content of C-OH and C-OOH groups. Formation of additional amount of water due to functional oxygen group reduction leads to layer delamination. Removing of functional oxygen groups

Etched ion tracks in silicon oxide and silicon oxynitride as charge injection or extraction channels for novel electronic structures

International Nuclear Information System (INIS)

Fink, D.; Petrov, A.V.; Hoppe, K.; Fahrner, W.R.; Papaleo, R.M.; Berdinsky, A.S.; Chandra, A.; Chemseddine, A.; Zrineh, A.; Biswas, A.; Faupel, F.; Chadderton, L.T.

2004-01-01

The impact of swift heavy ions onto silicon oxide and silicon oxynitride on silicon creates etchable tracks in these insulators. After their etching and filling-up with highly resistive matter, these nanometric pores can be used as charge extraction or injection paths towards the conducting channel in the underlying silicon. In this way, a novel family of electronic structures has been realized. The basic characteristics of these 'TEMPOS' (=tunable electronic material with pores in oxide on silicon) structures are summarized. Their functionality is determined by the type of insulator, the etch track diameters and lengths, their areal densities, the type of conducting matter embedded therein, and of course by the underlying semiconductor and the contact geometry. Depending on the TEMPOS preparation recipe and working point, the structures may resemble gatable resistors, condensors, diodes, transistors, photocells, or sensors, and they are therefore rather universally applicable in electronics. TEMPOS structures are often sensitive to temperature, light, humidity and organic gases. Also light-emitting TEMPOS structures have been produced. About 37 TEMPOS-based circuits such as thermosensors, photosensors, humidity and alcohol sensors, amplifiers, frequency multipliers, amplitude modulators, oscillators, flip-flops and many others have already been designed and successfully tested. Sometimes TEMPOS-based circuits are more compact than conventional electronics

Novel transparent conducting oxide technology for solar cells

Energy Technology Data Exchange (ETDEWEB)

Bishop, P.T.; Sutton, P.A.; Gardener, M.; Wakefield, G.

2005-07-01

This report outlines the development of both n- and p-type transparent Conducting Oxide (TCO) materials and the demonstrated feasibility of economic production of TCO films by deposition techniques. Descriptions are given of the four main tasks of the project with Task A concentrating on material design and synthesis covering the new precursor to zinc oxide thin films and selection of polymers for formulation; Task B dealing with film formation involving film deposition by spin coating, screen printing, inkjet printing, dip coating and chemical vapour deposition; Task C concerning performance evaluation; and Task D examining manufacturing process development. The prospects for commercialisation are explored and recommendation for future work are considered.

Shrinkage Effects of the Conduction Zone in the Electrical Properties of Metal Oxide Nanocrystals: The Basis for Room Temperature Conductometric Gas Sensor

Directory of Open Access Journals (Sweden)

M. Manzanares

2009-01-01

Full Text Available The influence of charge localized at the surface of minute metal oxide nanocrystals was studied in WO3 and In2O3 nanostructures, which were obtained replicating mesoporous silica templates. Here, it is shown that the very high resistive states observed at room temperature and dark conditions were originated by the total shrinkage of the conductive zone in the inner part of these nanocrystals. On the contrary, at room temperature and under UV illumination, both photogenerated electron-hole pairs and empty surface states generated by photons diminished the negative charge accumulated at the surface, enlarging the conductive zone and, as a consequence, leading to a reduction of the electrical resistance. Under these conditions, empty surface states produced by UV light reacted with oxidizing gaseous molecules. The charge exchange associated to these reactions also affected the size of the inner conductive zone, and leaded to a new steady-state resistance. These chemical, physical and geometrical effects can be used for gas detection, and constitutes the basis for developing novel room temperature conductometric gas sensors responsive to oxidizing species.

Magnetron sputtered transparent conductive zinc-oxide stabilized amorphous indium oxide thin films on polyethylene terephthalate substrates at ambient temperature

International Nuclear Information System (INIS)

Yan, Y.; Zhang, X.-F.; Ding, Y.-T.

2013-01-01

Amorphous transparent conducting zinc-oxide stabilized indium oxide thin films, named amorphous indium zinc oxide (a-IZO), were deposited by direct current magnetron sputtering at ambient temperature on flexible polyethylene terephthalate substrates. It has been demonstrated that the electrical resistivity could attain as low as ∼ 5 × 10 −4 Ω cm, which was noticeably lower than amorphous indium tin oxide films prepared at the same condition, while the visible transmittance exceeded 84% with the refractive index of 1.85–2.00. In our experiments, introduction of oxygen gas appeared to be beneficial to the improvement of the transparency and electrical conductivity. Both free carrier absorption and indirect transition were observed and Burstein–Moss effect proved a-IZO to be a degenerated amorphous semiconductor. However, the linear relation between the optical band gap and the band tail width which usually observed in covalent amorphous semiconductor such as a-Si:H was not conserved. Besides, porosity could greatly determine the resistivity and optical constants for the thickness variation at this deposition condition. Furthermore, a broad photoluminescence peak around 510 nm was identified when more than 1.5 sccm oxygen was introduced. - Highlights: ► Highly conducting amorphous zinc-oxide stabilized indium oxide thin films were prepared. ► The films were fabricated on polyethylene terephthalate at ambient temperature. ► Introduction of oxygen can improve the transparency and electrical conductivity. ► The linear relation between optical band gap and band tail width was not conserved

Cellulose nanocrystal: electronically conducting polymer nanocomposites for supercapacitors

OpenAIRE

Liew, Soon Yee

2012-01-01

This thesis describes the use of cellulose nanocrystals for the fabrication of porous nanocomposites with electronic conducting polymers for electrochemical supercapacitor applications. The exceptional strength and negatively charged surface functionalities on cellulose nanocrystals are utilised in these nanocomposites. The negatively charged surface functionalities on cellulose nanocrystals allow their simultaneous incorporation into electropolymerised, positively charged conducting polymer ...

The influence of oxidation properties on the electron emission characteristics of porous silicon

International Nuclear Information System (INIS)

He, Li; Zhang, Xiaoning; Wang, Wenjiang; Wei, Haicheng

2016-01-01

Highlights: • Evaluated the oxidation properties of porous silicon from semi-quantitative methods. • Discovered the relationship between oxidation properties and emission characteristics. • Revealed the micro-essence of the electron emission of the porous silicon. - Abstract: In order to investigate the influence of oxidation properties such as oxygen content and its distribution gradient on the electron emission characteristics of porous silicon (PS) emitters, emitters with PS thickness of 8 μm, 5 μm, and 3 μm were prepared and then oxidized by electrochemical oxidation (ECO) and ECO-RTO (rapid thermal oxidation) to get different oxidation properties. The experimental results indicated that the emission current density, efficiency, and stability of the PS emitters are mainly determined by oxidation properties. The higher oxygen content and the smaller oxygen distribution gradient in the PS layer, the larger emission current density and efficiency we noted. The most favorable results occurred for the PS emitter with the smallest oxygen distribution gradient and the highest level of oxygen content, with an emission current density of 212.25 μA/cm"2 and efficiency of 59.21‰. Additionally, it also demonstrates that thick PS layer benefits to the emission stability due to its longer electron acceleration tunnel. The FN fitting plots indicated that the effective emission areas of PS emitters can be enlarged and electron emission thresholds is decreased because of the higher oxygen content and smaller distribution gradient, which were approved by the optical micrographs of top electrode of PS emitters before and after electron emission.

The influence of oxidation properties on the electron emission characteristics of porous silicon

Energy Technology Data Exchange (ETDEWEB)

He, Li [Key Laboratory of Physical Electronics and Devices of the Ministry of Education, Xi’an Jiaotong University, Xi’an 710049 (China); Zhang, Xiaoning, E-mail: znn@mail.xjtu.edu.cn [Key Laboratory of Physical Electronics and Devices of the Ministry of Education, Xi’an Jiaotong University, Xi’an 710049 (China); Wang, Wenjiang [Key Laboratory of Physical Electronics and Devices of the Ministry of Education, Xi’an Jiaotong University, Xi’an 710049 (China); Wei, Haicheng [School of Electrical and Information Engineering, Beifang University of Nationalities, Yinchuan750021 (China)

2016-09-30

Highlights: • Evaluated the oxidation properties of porous silicon from semi-quantitative methods. • Discovered the relationship between oxidation properties and emission characteristics. • Revealed the micro-essence of the electron emission of the porous silicon. - Abstract: In order to investigate the influence of oxidation properties such as oxygen content and its distribution gradient on the electron emission characteristics of porous silicon (PS) emitters, emitters with PS thickness of 8 μm, 5 μm, and 3 μm were prepared and then oxidized by electrochemical oxidation (ECO) and ECO-RTO (rapid thermal oxidation) to get different oxidation properties. The experimental results indicated that the emission current density, efficiency, and stability of the PS emitters are mainly determined by oxidation properties. The higher oxygen content and the smaller oxygen distribution gradient in the PS layer, the larger emission current density and efficiency we noted. The most favorable results occurred for the PS emitter with the smallest oxygen distribution gradient and the highest level of oxygen content, with an emission current density of 212.25 μA/cm{sup 2} and efficiency of 59.21‰. Additionally, it also demonstrates that thick PS layer benefits to the emission stability due to its longer electron acceleration tunnel. The FN fitting plots indicated that the effective emission areas of PS emitters can be enlarged and electron emission thresholds is decreased because of the higher oxygen content and smaller distribution gradient, which were approved by the optical micrographs of top electrode of PS emitters before and after electron emission.

Conductance oscillation in graphene-nanoribbon-based electronic Fabry-Perot resonators

International Nuclear Information System (INIS)

Zhang Yong; Han Mei; Shen Linjiang

2010-01-01

By using the tight-binding approximation and the Green's function method, the quantum conductance of the Fabry-Perot-like electronic resonators composed of zigzag and metallic armchair edge graphene nanoribbons (GNRs) was studied numerically. Obtained results show that due to Fabry-Perot-like electronic interference, the conductance of the GNR resonators oscillates periodically with the Fermi energy. The effects of disorders and coupling between the electrodes and the GNR on conductance oscillations were explored. It is found that the conductance oscillations appear at the strong coupling and become resonant peaks as the coupling is very weak. It is also found that the strong disorders in the GNR can smear the conductance oscillation periods. In other words, the weak coupling and the strong disorders all can blur the conductance oscillations, making them unclearly distinguished.

Electronic structure classifications using scanning tunneling microscopy conductance imaging

International Nuclear Information System (INIS)

Horn, K.M.; Swartzentruber, B.S.; Osbourn, G.C.; Bouchard, A.; Bartholomew, J.W.

1998-01-01

The electronic structure of atomic surfaces is imaged by applying multivariate image classification techniques to multibias conductance data measured using scanning tunneling microscopy. Image pixels are grouped into classes according to shared conductance characteristics. The image pixels, when color coded by class, produce an image that chemically distinguishes surface electronic features over the entire area of a multibias conductance image. Such open-quotes classedclose quotes images reveal surface features not always evident in a topograph. This article describes the experimental technique used to record multibias conductance images, how image pixels are grouped in a mathematical, classification space, how a computed grouping algorithm can be employed to group pixels with similar conductance characteristics in any number of dimensions, and finally how the quality of the resulting classed images can be evaluated using a computed, combinatorial analysis of the full dimensional space in which the classification is performed. copyright 1998 American Institute of Physics

Properties of TiO{sub 2}-based transparent conducting oxides

Energy Technology Data Exchange (ETDEWEB)

Hitosugi, Taro [Kanagawa Academy of Science and Technology (KAST), 213-0012 Kawasaki (Japan); Advanced Institute for Materials Research (WPI-AIMR), Tohoku University, 980-8577 Sendai (Japan); Yamada, Naoomi; Nakao, Shoichiro [Kanagawa Academy of Science and Technology (KAST), 213-0012 Kawasaki (Japan); Hirose, Yasushi; Hasegawa, Tetsuya [Kanagawa Academy of Science and Technology (KAST), 213-0012 Kawasaki (Japan); Department of Chemistry, University of Tokyo, 113-0033 Tokyo (Japan)

2010-07-15

The development and properties of titanium dioxide (TiO{sub 2})-based transparent conducting oxides (TCO), which exhibit properties comparable to those of In{sub 2-x}Sn{sub x}O{sub 3} (ITO), are reviewed in this article. An epitaxial thin film of anatase Ti{sub 0.94}Nb{sub 0.06}O{sub 2} exhibited a resistivity ({rho}) of 2.3 x 10{sup -4}{omega} cm and internal transmittance of {proportional_to}95% in the visible light region. Furthermore, we prepared polycrystalline films with {rho} of 6.4 x 10{sup -4}{omega} cm at room temperature on glass substrates by using sputtering. We focus on characteristics unique to TiO{sub 2}-based TCO, such as a high refractive index, high transmittance in infrared, and high stability in reducing atmospheres. Possible applications of TiO{sub 2}-based TCOs, as well as the mechanism of the transparent conducting properties found in this d-electron-based TCO, are discussed in this review. Photograph showing TiO{sub 2}-based TCO on a transparent plastic film. Note that the film appears greenish due to interference in the film originating from its high refractive index. This high refractive index is one of the unique characteristics of TiO{sub 2}-based TCO. (Abstract Copyright [2010], Wiley Periodicals, Inc.)

Room Temperature Electrochemical Sintering of Zn Microparticles and Its Use in Printable Conducting Inks for Bioresorbable Electronics.

Science.gov (United States)

Lee, Yoon Kyeung; Kim, Jeonghyun; Kim, Yerim; Kwak, Jean Won; Yoon, Younghee; Rogers, John A

2017-10-01

This study describes a conductive ink formulation that exploits electrochemical sintering of Zn microparticles in aqueous solutions at room temperature. This material system has relevance to emerging classes of biologically and environmentally degradable electronic devices. The sintering process involves dissolution of a surface passivation layer of zinc oxide in CH 3 COOH/H 2 O and subsequent self-exchange of Zn and Zn 2+ at the Zn/H 2 O interface. The chemical specificity associated with the Zn metal and the CH 3 COOH/H 2 O solution is critically important, as revealed by studies of other material combinations. The resulting electrochemistry establishes the basis for a remarkably simple procedure for printing highly conductive (3 × 10 5 S m -1 ) features in degradable materials at ambient conditions over large areas, with key advantages over strategies based on liquid phase (fusion) sintering that requires both oxide-free metal surfaces and high temperature conditions. Demonstrations include printed magnetic loop antennas for near-field communication devices. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Detecting Electron Transport of Amino Acids by Using Conductance Measurement

Directory of Open Access Journals (Sweden)

Wei-Qiong Li

2017-04-01

Full Text Available The single molecular conductance of amino acids was measured by a scanning tunneling microscope (STM break junction. Conductance measurement of alanine gives out two conductance values at 10−1.85 G0 (1095 nS and 10−3.7 G0 (15.5 nS, while similar conductance values are also observed for aspartic acid and glutamic acid, which have one more carboxylic acid group compared with alanine. This may show that the backbone of NH2–C–COOH is the primary means of electron transport in the molecular junction of aspartic acid and glutamic acid. However, NH2–C–COOH is not the primary means of electron transport in the methionine junction, which may be caused by the strong interaction of the Au–SMe (methyl sulfide bond for the methionine junction. The current work reveals the important role of the anchoring group in the electron transport in different amino acids junctions.

III-V/Si wafer bonding using transparent, conductive oxide interlayers

Energy Technology Data Exchange (ETDEWEB)

Tamboli, Adele C., E-mail: Adele.Tamboli@nrel.gov; Hest, Maikel F. A. M. van; Steiner, Myles A.; Essig, Stephanie; Norman, Andrew G.; Bosco, Nick; Stradins, Paul [National Center for Photovoltaics, National Renewable Energy Laboratory, 15013 Denver West Pkwy, Golden, Colorado 80401 (United States); Perl, Emmett E. [Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106-9560 (United States)

2015-06-29

We present a method for low temperature plasma-activated direct wafer bonding of III-V materials to Si using a transparent, conductive indium zinc oxide interlayer. The transparent, conductive oxide (TCO) layer provides excellent optical transmission as well as electrical conduction, suggesting suitability for Si/III-V hybrid devices including Si-based tandem solar cells. For bonding temperatures ranging from 100 °C to 350 °C, Ohmic behavior is observed in the sample stacks, with specific contact resistivity below 1 Ω cm{sup 2} for samples bonded at 200 °C. Optical absorption measurements show minimal parasitic light absorption, which is limited by the III-V interlayers necessary for Ohmic contact formation to TCOs. These results are promising for Ga{sub 0.5}In{sub 0.5}P/Si tandem solar cells operating at 1 sun or low concentration conditions.

Comparative study of electron conduction in azulene and naphthalene

Indian Academy of Sciences (India)

Wintec

tional or electronic devices. Recent advances in experi- mental techniques have allowed ... stimulates us to study the electronic conduction in azulene molecule and to compare that with its isomer, naphthalene. ..... ernment of India, for funding and (SD) acknowledges CSIR,. Government of India, for a research fellowship.

Preparation of Conductive Organometallic Complexes and Their Pastes or Inks Using the Electron Beam Apparatus

International Nuclear Information System (INIS)

Gu, Ja Min; Lee, Hyosun; Lee, Byung Cheol; Park, Ji Hyun

2011-01-01

We have synthesized the silver and copper complexes using the ligands, amine derivatives Ν-methylhydantoin amine, Ν-triethanol amine, the copper complexes are prepared depending on the equivalents of starting materials, however the silver complexes failed. In case of terephthalic acid, glutaric acid, we have synthesized silver and copper complexes successfully. We have measured conductivity of silver and copper complexes paste and ink themselves by thermal reduction using PULSE UV method. A couple of synthesized copper complex's paste have shown some resistance which is not enough for the conductive materials. Commercially silver pastes composed of silver oxide and silver salt of carboxylic acid, applied to the printed transistor circuits with suitable process, i. e. thermal reduction. This process substituted for electron beam brings a simplification of process, economical, environmental friendly process and a development of in the application of flexible substrate

Tuning the Electrical and Thermal Conductivities of Thermoelectric Oxides through Impurity Doping

Science.gov (United States)

Torres Arango, Maria A.

Waste heat and thermal gradients available at power plants can be harvested to power wireless networks and sensors by using thermoelectric (TE) generators that directly transform temperature differentials into electrical power. Oxide materials are promising for TE applications in harsh industrial environments for waste heat recovery at high temperatures in air, because they are lightweight, cheaply produced, highly efficient, and stable at high temperatures in air. Ca3Co4O9(CCO) with layered structure is a promising p-type thermoelectric oxide with extrapolated ZT value of 0.87 in single crystal form [1]. However the ZT values for the polycrystalline ceramics remain low of ˜0.1-0.3. In this research, nanostructure engineering approaches including doping and addition of nanoinclusions were applied to the polycrystalline CCO ceramic to improve the energy conversion efficiency. Polycrystalline CCO samples with various Bi doping levels were prepared through the sol-gel chemical route synthesis of powders, pressing and sintering of the pellets. Microstructure features of Bi doped ceramic bulk samples such as porosity, development of crystal texture, grain boundary dislocations and segregation of Bi dopants at various grain boundaries are investigated from microns to atomic scale. The results of the present study show that the Bi-doping is affecting both the electrical conductivity and thermal conductivity simultaneously, and the optimum Bi doping level is strongly correlated with the microstructure and the processing conditions of the ceramic samples. At the optimum doping level and processing conditions of the ceramic samples, the Bi substitution of Ca results in the increase of the electrical conductivity, decrease of the thermal conductivity, and improvement of the crystal texture. The atomic resolution Scanning Transmission Electron Microscopy (STEM) Z-contrast imaging and the chemistry analysis also reveal the Bi-segregation at grain boundaries of CCO

Multielectronic conduction in La1-xSrxGa1/2Mn1/2O3-δ as solid oxide fuel cell cathode

Science.gov (United States)

Iguchi, E.; Hashimoto, Y.; Kurumada, M.; Munakata, F.

2003-08-01

Four-probe dc conductivities, capacitances, and thermopower have been measured in the temperature range of 80-1123 K for La1-xSrxGa1/2Mn1/2O3-δ, which is a desirable cathode material for lanthanum-gallate electrolytes of solid oxide fuel cells. The dc conductivities in the specimens (0.1⩽x⩽0.3) are insensitive to x but the thermopower is very sensitive to x, although the x=0 specimen exhibits a somewhat different conduction behavior. At T500 K, the band conduction dominates the electronic transports. The ionic conduction due to O2- migration seems difficult to contribute directly to the dc conduction even at high temperature.

Immobilization, hybridization, and oxidation of synthetic DNA on gold surface: Electron transfer investigated by electrochemistry and scanning tunneling microscopy

Energy Technology Data Exchange (ETDEWEB)

McEwen, Gerald D.; Chen Fan [Biological Engineering Program, Department of Biological and Irrigation Engineering, Utah State University, 4105 Old Main Hill, Logan, UT 84322-4105 (United States); Zhou Anhong, E-mail: Anhong.Zhou@usu.edu [Biological Engineering Program, Department of Biological and Irrigation Engineering, Utah State University, 4105 Old Main Hill, Logan, UT 84322-4105 (United States)

2009-06-08

Fundamental understanding of interfacial electron transfer (ET) among electrolyte/DNA/solid-surface will facilitate the design for electrical detection of DNA molecules. In this report, the electron transfer characteristics of synthetic DNA (sequence from pathogenic Cryptosporidium parvum) self-assembled on a gold surface was electrochemically studied. The effects of immobilization order on the interface ET related parameters such as diffusion coefficient (D{sub 0}), surface coverage ({theta}{sub R}), and monolayer thickness (d{sub i}) were determined by cyclic voltammetry (CV) and electrochemical impedance spectroscopy (EIS). DNA surface density ({Gamma}{sub DNA}) was determined by the integration of the charge of the electro-oxidation current peaks during the initial cyclic voltammetry scans. It was found that the DNA surface densities at different modifications followed the order: {Gamma}{sub DNA} (dsS-DNA/Au) > {Gamma}{sub DNA} (MCH/dsS-DNA/Au) > {Gamma}{sub DNA} (dsS-DNA/MCH/Au). It was also revealed that the electro-oxidation of the DNA modified gold surface would involve the oxidation of nucleotides (guanine and adenine) with a 5.51 electron transfer mechanism and the oxidative desorption of DNA and MCH molecules by a 3 electron transfer mechanism. STM topography and current image analysis indicated that the surface conductivity after each surface modification followed the order: dsS-DNA/Au < MCH/dsS-DNA/Au < oxidized MCH/dsS-DNA/Au < Hoechst/oxidized MCH/dsS-DNA/Au. The results from this study suggested a combination of variations in immobilization order may provide an alternative approach for the optimization of DNA hybridization and the further development for electrical detection of DNA.

Effect of pressure on f-electron delocalization and oxidation in actinide dioxides

Energy Technology Data Exchange (ETDEWEB)

Petit, L., E-mail: leon.petit@stfc.ac.uk [Daresbury Laboratory, Daresbury, Warrington WA4 4AD (United Kingdom); Szotek, Z.; Temmerman, W.M. [Daresbury Laboratory, Daresbury, Warrington WA4 4AD (United Kingdom); Stocks, G.M. [Materials Science and Technology Division and Center for Defect Physics, Oak Ridge National Laboratory, Oak Ridge, TN 37831 (United States); Svane, A. [Department of Physics and Astronomy, University of Aarhus, DK-8000 Aarhus C (Denmark)

2014-08-01

Using first principles calculations, we have investigated f-electron delocalization and oxidation in the actinide dioxides under pressure. Whilst UO{sub 2} is found on the verge of an insulator to metal transition at the equilibrium volume, increasingly larger pressures are required to delocalize f-electrons in NpO{sub 2}, PuO{sub 2}, and AmO{sub 2}, respectively 49, 112, and 191 GPa. Compared to this broad range of pressures, the experimentally observed structural transitions, in all four dioxides, occur between 30 and 40 GPa, which leads us to conclude that the associated volume collapse is not due to f-electron delocalization. In contrast, oxidation of the dioxides is found to be linked to the degree of f-electron localization, but it emerges that for naturally occurring pressures (<10 GPa), higher oxides only exist for UO{sub 2}.

Interpretation of electron beam induced charging of oxide layers in a transistor studied using electron holography

DEFF Research Database (Denmark)

Ubaldi, F; Pozzi, G; Kasama, Takeshi

2010-01-01

Off-axis electron holography has been used to characterize a linear array of transistors, which was prepared for examination in cross-sectional geometry in the transmission electron microscope using focused ion beam milling. In reconstructed phase images, regions of silicon oxide that are located...... into account the mean inner potential of the specimen and the perturbed vacuum reference wave. The simulations suggest that the oxide layers contain a uniform volume density of positive charge and that the elliptical contours result from the combined effect of the electrostatic potential in the specimen...

Mesoporous silica wrapped with graphene oxide-conducting PANI nanowires as a novel hybrid electrode for supercapacitor

Science.gov (United States)

Javed, Mohsin; Abbas, Syed Mustansar; Siddiq, Mohammad; Han, Dongxue; Niu, Li

2018-02-01

A high charge-carrier transport is an important aim in the synthesis of nanostructures for an effective supercapacitor. This article describes a methodology to prepare mesoporous silica nanoparticles (MSNs) wrapped with graphene oxide (GO) together with conducting polyaniline (PANI) wires. The morphology and chemical structure of the prepared samples have been tested by transmission electron microscopy (TEM), high-resolution TEM (HRTEM), and X-ray diffraction (XRD), whereas the stability and electrostatic interaction of the structures have been verified by thermogravimetric analysis (TGA) and Fourier-transform infrared (FT-IR) spectroscopy, respectively. The supercapacitive behaviour of these nanocomposites has been analysed by cyclic voltammetry (CV), charge-discharge tests, and electrochemical impedance spectroscopy (EIS). Compared with pristine MSNs and PANI, the 20%-GO@MSNs/PANI nanocomposite had the highest specific capacitance, reaching 412 F g-1. The nanocomposite structure maximizes the synergy between mesoporous metal oxide, conducting PANI, and GO, yielding a significantly enhanced specific capacitance, rapid charge-discharge rates, and good cycling stability of the resulting device. The wrapping with GO prevents the structural breakdown and acts as a highly conductive pathway by bridging the individual particles, whereas the MSNs nanoparticles greatly enlarge the specific surface area to facilitate ion transport and charge transfer throughout the cycling performance of supercapacitor. The approach adopted in this article can be applied for preparing similar novel functional materials in future for electrochemical applications.

Evidence for Single Metal Two Electron Oxidative Addition and Reductive Elimination at Uranium

OpenAIRE

Gardner, Benedict M; Kefalidis, Christos E; Lu, Erli; Patel, Dipti; Mcinnes, Eric; Tuna, Floriana; Wooles, Ashley; Maron, Laurent; Liddle, Stephen

2017-01-01

Reversible single-metal two-electron oxidative addition and reductive elimination are common fundamental reactions for transition metals that underpin major catalytic transformations. However, these reactions have never been observed together in the f-block because these metals exhibit irreversible one- or multi-electron oxidation or reduction reactions. Here, we report that azobenzene oxidises sterically and electronically unsaturated uranium(III) complexes to afford a uranium(V)-imido compl...

Pressure-Dependent Electronic and Transport Properties of Bulk Platinum Oxide by Density Functional Theory

Science.gov (United States)

Kansara, Shivam; Gupta, Sanjeev K.; Sonvane, Yogesh; Nekrasov, Kirill A.; Kichigina, Natalia V.

2018-02-01

The structural, electronic, and vibrational properties of bulk platinum oxide (PtO) at compressive pressures in the interval from 0 GPa to 35 GPa are investigated using the density functional theory. The calculated electronic band structure of PtO shows poor metallicity at very low density of states on the Fermi level. However, the hybrid pseudopotential calculation yielded 0.78 eV and 1.30 eV direct band and indirect gap, respectively. Importantly, our results predict that PtO has a direct band gap within the framework of HSE06, and it prefers equally zero magnetic order at different pressures. In the Raman spectra, peaks are slightly shifted towards higher frequency with the decrease in pressure. We have also calculated the thermoelectric properties, namely the electronic thermal conductivity and electrical conductivity, with respect to temperature and thermodynamic properties such as entropy, specific heat at constant volume, enthalpy and Gibbs free energy with respect to pressure. The result shows that PtO is a promising candidate for use as a catalyst, in sensors, as a photo-cathode in water electrolysis, for thermal decomposition of inorganic salt and fuel cells.

Electrodeposition of silver nanoparticle arrays on transparent conductive oxides

International Nuclear Information System (INIS)

Zhang, Dezhong; Tang, Yang; Jiang, Fuguo; Han, Zhihua; Chen, Jie

2016-01-01

Highlights: • The sliver nanoparticles' size and the distance between nanoparticles are tunable. - Abstract: In this paper, we present a facile method for the preparation of silver nanoparticles on aluminum-doped zinc oxide (AZO) via electrodeposition techniques at room temperature. The morphology and structure of silver nanoparticles are characterized by scanning electron microscopy (SEM), transmission electron microscopy (TEM), respectively. Due to localized surface plasmon resonances, as-prepared silver nanoparticles on AZO glass exhibited different reflectivity in contrast with bare AZO glass. The weighted reflection of AZO substrate increased from 10.2% to 12.8%. The high reflection property of silver nanoparticle arrays on AZO substrate might be applicable for thin film solar cells and other optoelectronics applications.

Electrodeposition of silver nanoparticle arrays on transparent conductive oxides

Energy Technology Data Exchange (ETDEWEB)

Zhang, Dezhong; Tang, Yang, E-mail: tangyang@nicenergy.com; Jiang, Fuguo; Han, Zhihua; Chen, Jie

2016-04-30

Highlights: • The sliver nanoparticles' size and the distance between nanoparticles are tunable. - Abstract: In this paper, we present a facile method for the preparation of silver nanoparticles on aluminum-doped zinc oxide (AZO) via electrodeposition techniques at room temperature. The morphology and structure of silver nanoparticles are characterized by scanning electron microscopy (SEM), transmission electron microscopy (TEM), respectively. Due to localized surface plasmon resonances, as-prepared silver nanoparticles on AZO glass exhibited different reflectivity in contrast with bare AZO glass. The weighted reflection of AZO substrate increased from 10.2% to 12.8%. The high reflection property of silver nanoparticle arrays on AZO substrate might be applicable for thin film solar cells and other optoelectronics applications.

Replacing Electron Transport Cofactors with Hydrogenases

KAUST Repository

Laamarti, Rkia

2016-01-01

to directly exchange electrons with electrodes. Hence, the co-immobilization of both, an electron-utilizing and an electron-generating oxidoreductase on conductive nanoparticles should facilitate the direct electron flow from an enzymatic oxidation to a

Time-dependence hole and electron trapping effects in SIMOX buried oxides

International Nuclear Information System (INIS)

Boesch, H.E. Jr.; Taylor, T.L.; Hite, L.R.; Bailey, W.E.

1990-01-01

Back-channel threshold shift associated with the buried oxide layers of separation by implanted oxygen (SIMOX) and zone-melted recrystallization (ZMR) field-effect transistors (FETs) was measured following pulsed irradiation as a function of temperature and back-gate bias using a fast time-resolved I-V measurement technique. The SIMOX FETs showed large initial negative voltage shifts at 0.2 ms after irradiation followed by temperature- and bias-dependent additional negative shifts to 800s. Analysis and modeling of the results indicate efficient deep trapping of radiation-generated holes in the bulk of the oxide, substantial initial trapping of radiation-generated electrons in the oxide, and rapid removal of the trapped electrons by a thermal detrapping process. The ZMR FETs showed evidence of substantial trapping of holes alone in the oxide bulk

Structure and properties of a model conductive filament/host oxide interface in HfO2-based ReRAM

Science.gov (United States)

Padilha, A. C. M.; McKenna, K. P.

2018-04-01

Resistive random-access memory (ReRAM) is a promising class of nonvolatile memory capable of storing information via its resistance state. In the case of hafnium oxide-based devices, experimental evidence shows that a conductive oxygen-deficient filament is formed and broken inside of the device by oxygen migration, leading to switching of its resistance state. However, little is known about the nature of this conductive phase, its interface with the host oxide, or the associated interdiffusion of oxygen, presenting a challenge to understanding the switching mechanism and device properties. To address these problems, we present atomic-scale first-principles simulations of a prototypical conductive phase (HfO), the electronic properties of its interface with HfO2, as well as stability with respect to oxygen diffusion across the interface. We show that the conduction-band offset between HfO and HfO2 is 1.3 eV, smaller than typical electrode-HfO2 band offsets, suggesting that positive charging and band bending should occur at the conductive filament-HfO2 interface. We also show that transfer of oxygen across the interface, from HfO2 into HfO, costs around 1.2 eV per atom and leads to a gradual opening of the HfO band gap, and hence disruption of the electrical conductivity. These results provide invaluable insights into understanding the switching mechanism for HfO2-based ReRAM.

Electronic conductivity studies on oxyhalide glasses containing TMO

Energy Technology Data Exchange (ETDEWEB)

Vijayatha, D. [R& D Center, Bharatiar University, Coimbatore, Tamil Nadu (India); Department of Physics, Gurunanak Institute of Technology, Hyderabad -040 (India); Viswanatha, R. [Solid State and Structural Chemistry Unit, Indian Institute of Science, Bangalore 560012 (India); Sujatha, B. [Department of Electronics and Communcation, MSRIT, Bangalore 560054 (India); Narayana Reddy, C., E-mail: nivetejareddy@gmail.com [Department of Physics, Sree Siddaganga College of Arts, Science and Commerce, Tumkur 572102 (India)

2016-05-06

Microwave-assisted synthesis is cleaner, more economical and much faster than conventional methods. The development of new routes for the synthesis of solid materials is an integral part of material science and technology. The electronic conductivity studies on xPbCl{sub 2} – 60 PbO – (40-x) V{sub 2}O{sub 5} (1 ≥ x ≤ 10) glass system has been carried out over a wide range of composition and temperature (300 K to 423 K). X-ray diffraction study confirms the amorphous nature of the samples. The Scanning electron microscopic studies reveal the formation of cluster like morphology in PbCl{sub 2} containing glasses. The d.c conductivity exhibits Arrhenius behaviour and increases with V{sub 2}O{sub 5} concentration. Analysis of the results is interpreted in view Austin-Mott’s small polaron model of electron transport. Activation energies calculated using regression analysis exhibit composition dependent trend and the variation is explained in view of the structure of lead-vanadate glass.

Ionic-to-Electronic Conductivity Crossover in CdTe-AgI-As2Te3 Glasses: An 110mAg Tracer Diffusion Study.

Science.gov (United States)

Kassem, M; Alekseev, I; Bokova, M; Le Coq, D; Bychkov, E

2018-04-12

Conductivity isotherms of (CdTe) x (AgI) 0.5- x/2 (As 2 Te 3 ) 0.5- x/2 glasses (0.0 ≤ x ≤ 0.15) reveal a nonmonotonic behavior with increasing CdTe content reminiscent of mixed cation effect in oxide and chalcogenide glasses. Nevertheless, the apparent similarity appears to be partly incorrect. Using 110m Ag tracer diffusion measurements, we show that semiconducting CdTe additions produce a dual effect: (i) decreasing the Ag + ion transport by a factor of ≈200 with a simultaneous increase of the diffusion activation energy and (ii) increasing the electronic conductivity by 1.5 orders of magnitude. Consequently, the conductivity minimum at x = 0.05 reflects an ionic-to-electronic transport crossover; the silver-ion transport number decreases by 3 orders of magnitude with increasing x.

Electrochemical properties and electrocatalytic activity of conducting polymer/copper nanoparticles supported on reduced graphene oxide composite

Science.gov (United States)

Ehsani, Ali; Jaleh, Babak; Nasrollahzadeh, Mahmoud

2014-07-01

Reduced graphene oxide (rGO) was used to support Cu nanoparticles. As electro-active electrodes for supercapacitors composites of reduced graphene oxide/Cu nanoparticles (rGO/CuNPs) and polytyramine (PT) with good uniformity are prepared by electropolymerization. Composite of rGO/CuNPs-PT was synthesized by cyclic voltammetry (CV) methods and electrochemical properties of film were investigated by using electrochemical techniques. The results show that, the rGO/CuNPs-PT/G has better capacitance performance. This is mainly because of the really large surface area and the better electronic and ionic conductivity of rGO/CuNPs-PT/G, which lead to greater double-layer capacitance and faradic pseudo capacitance. Modified graphite electrodes (rGO/CuNPs-PT/G) were examined for their redox process and electrocatalytic activities towards the oxidation of methanol in alkaline solutions. The methods of cyclic voltammetry (CV), chronoamperometry (CA) and electrochemical impedance spectroscopy (EIS) were employed. In comparison with a Cu-PT/G (Graphite), rGO/CuNPs-PT/G modified electrode shows a significantly higher response for methanol oxidation. A mechanism based on the electro-chemical generation of Cu(III) active sites and their subsequent consumptions by methanol have been discussed.

Amorphous Tin Oxide as a Low-Temperature-Processed Electron-Transport Layer for Organic and Hybrid Perovskite Solar Cells

KAUST Repository

Barbe, Jeremy

2017-02-08

Chemical bath deposition (CBD) of tin oxide (SnO) thin films as an electron-transport layer (ETL) in a planar-heterojunction n-i-p organohalide lead perovskite and organic bulk-heterojunction (BHJ) solar cells is reported. The amorphous SnO (a-SnO) films are grown from a nontoxic aqueous bath of tin chloride at a very low temperature (55 °C) and do not require postannealing treatment to work very effectively as an ETL in a planar-heterojunction n-i-p organohalide lead perovskite or organic BHJ solar cells, in lieu of the commonly used ETL materials titanium oxide (TiO) and zinc oxide (ZnO), respectively. Ultraviolet photoelectron spectroscopy measurements on the glass/indium-tin oxide (ITO)/SnO/methylammonium lead iodide (MAPbI)/2,2′,7,7′-tetrakis(N,N-di-p-methoxyphenylamine)-9,9′-spirobifluorene device stack indicate that extraction of photogenerated electrons is facilitated by a perfect alignment of the conduction bands at the SnO/MAPbI interface, while the deep valence band of SnO ensures strong hole-blocking properties. Despite exhibiting very low electron mobility, the excellent interfacial energetics combined with high transparency (E > 4 eV) and uniform substrate coverage make the a-SnO ETL prepared by CBD an excellent candidate for the potentially low-cost and large-scale fabrication of organohalide lead perovskite and organic photovoltaics.

Conductivity of the electron-impurity system

International Nuclear Information System (INIS)

Goettig, S.

1983-09-01

The free-carrier absorption of electromagnetic radiation due to the presence of static scatterers is examined taking into account the electron-electron interaction, the plasma-phonon polar coupling and the plasma anisotropy. For the case of strong coupling in the isotropic plasma the absorption due to the collective-mode excitation processes is, for frequencies just above the plasmon-like collective mode frequency, shown to be dominant over the absorption due to single-particle excitations. The expression for the frequency-dependent absorptive part of the conductivity due to the long-wavelength collective-mode excitations is derived for the case of multicomponent anisotropic degenerate plasma (e.g. lead chalcogenides). The results are discussed in detail and compared with available experimental data for n-PbSe. The comparison with the previous theories is also given. (author)

A novel technique for increase the figure of merit of indium-tin oxide transparent conducting coatings

International Nuclear Information System (INIS)

Keshmiri, S.H.; Roknabadi, M.R.

1999-01-01

Indium-Tin Oxide (ITO) films have been used as transparent electrodes in many optoelectronic devices. Although the free electron concentration in these films can be rather high, but due to low drift mobilities, the electrical conductivity of ITO films are much lower than that of metals. This is mainly due to high concentration of trapping centers created by structural defects in an ITO film. In this article, a simple technique is explained for post-deposition hydrogenation of ITO films. It was found that exposure of ITO films to atomic-hydrogen plasma produced a significant increases in the electrical conductivity of the films. At the optimum condition, an increase of about 330% in the electrical conductivity of an ITO film was observed. The hydrogenation process did not affect optical transparency of he samples adversely. But some slight improvements (in visible wavelengths) were observed. SEM studies indicated that the microstructure of the films was not noticeably changed by the hydrogenation process. (author)

Proton conducting sodium alginate electrolyte laterally coupled low-voltage oxide-based transistors

Energy Technology Data Exchange (ETDEWEB)

Liu, Yang Hui; Wan, Qing, E-mail: wanqing@nju.edu.cn [Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201 (China); School of Electronic Science and Engineering, Nanjing University, Nanjing 210093 (China); Qiang Zhu, Li, E-mail: lqzhu@nimte.ac.cn [Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201 (China); Shi, Yi [School of Electronic Science and Engineering, Nanjing University, Nanjing 210093 (China)

2014-03-31

Solution-processed sodium alginate electrolyte film shows a high proton conductivity of ∼5.5 × 10{sup −3} S/cm and a high lateral electric-double-layer (EDL) capacitance of ∼2.0 μF/cm{sup 2} at room temperature with a relative humidity of 57%. Low-voltage in-plane-gate indium-zinc-oxide-based EDL transistors laterally gated by sodium alginate electrolytes are fabricated on glass substrates. The field-effect mobility, current ON/OFF ratio, and subthreshold swing of such EDL transistors are estimated to be 4.2 cm{sup 2} V{sup −1} s{sup −1}, 2.8 × 10{sup 6}, and 130 mV/decade, respectively. At last, a low-voltage driven resistor-load inverter is also demonstrated. Such in-plane-gate EDL transistors have potential applications in portable electronics and low-cost biosensors.

Electron quantum interferences and universal conductance fluctuations

International Nuclear Information System (INIS)

Benoit, A.; Pichard, J.L.

1988-05-01

Quantum interferences yield corrections to the classical ohmic behaviour predicted by Boltzmann theory in electronic transport: for instance the well-known ''weak localization'' effects. Furthermore, very recently, quantum interference effects have been proved to be responsible for statistically different phenomena, associated with Universal Conductance Fluctuations and observed on very small devices [fr

Ionic and electronic conductivity in lead-zirconate-titanate (PZT)

NARCIS (Netherlands)

Boukamp, Bernard A.; Pham thi ngoc mai, P.T.N.M.; Blank, David H.A.; Bouwmeester, Henricus J.M.

2004-01-01

Accurate impedance measurements on differently sized samples of lead–zirconate–titanate (PbZr0.53Ti0.47O3, PZT) have been analyzed with a CNLS procedure, resulting in the separation of the ionic and electronic conductivities over a temperature range from f150 to 630 jC. At 603 jC the electronic

Investigations of the electronic, magnetic and crystalline structure of perovskite oxides and an oxide-oxide interface

International Nuclear Information System (INIS)

Raisch, Christoph Werner

2013-01-01

The mineral perovskite CaTiO 3 lends its name to the class of compounds with composition ABX 3 , which have the same type of crystal structure known as the perovskite structure. Here, A and B are cations while X is typically a halogen or oxygen anion. The bigger cation A and the X anions form a cubic close packing AX 3 with the smaller B cation occupying one quarter of the octahedral sites. The underlying work deals with three classes of perovskite oxides, the ''titanates'', the ''cuprates'' and the ''manganites'', where the central B cations are Ti, Cu and Mn respectively, each class with very characteristic properties. Strontium titanate, STO, like so many oxides is an insulator, yet paraelectric and diamagnetic. It gained special interest as a commercially available, high quality substrate for the growth of hightemperature superconductors and other oxide thin films. The huge class of perovskite cuprates is most famous for members like YBCO, the well-known high-temperature superconductor. Finally, the doped, mixed-valent perovskite manganites LXMO (here X = Sr, Ca, Ce) have to be mentioned. They appeared on the screen of experimental and theoretical physicists in the 1950s when ferromagnetism and magnetoresistance were discovered in these compounds, leading to the theory of double exchange. In the mid-1990s they further increased their importance, following the description of the Jahn-Teller polaron and the discovery of the colossal magnetoresistance phenomenom. They may be derived from an insulator, LaMnO 3 , but the doping allows the control of electric and magnetic properties over a wide range, i.e. from insulating behavior to metallic conductivity or from diamagnet to ferromagnet. Further notable effects are found when electric or magnetic fields are applied, including spin polarization and the related effect of colossal magnetoresistance. These substances may be approximated as consisting of

Measuring the residual stress of transparent conductive oxide films on PET by the double-beam shadow Moiré interferometer

Science.gov (United States)

Chen, Hsi-Chao; Huang, Kuo-Ting; Lo, Yen-Ming; Chiu, Hsuan-Yi; Chen, Guan-Jhen

2011-09-01

The purpose of this research was to construct a measurement system which can fast and accurately analyze the residual stress of the flexible electronics. The transparent conductive oxide (TCO) films, tin-doped indium oxide (ITO), were deposited by radio frequency (RF) magnetron sputtering using corresponding oxide targets on PET substrate. As we know that the shadow Moiré interferometry is a useable way to measure the large deformation. So we set up a double beam shadow Moiré interferometer to measure and analyze the residual stress of TCO films on PET. The feature was to develop a mathematical model and combine the image processing software. By the LabVIEW graphical software, we could measure the distance which is between the left and right fringe on the pattern to solve the curvature of deformed surface. Hence, the residual stress could calculate by the Stoney correction formula for the flexible electronics. By combining phase shifting method with shadow Moiré, the measurement resolution and accuracy have been greatly improved. We also had done the error analysis for the system whose relative error could be about 2%. Therefore, shadow Moiré interferometer is a non-destructive, fast, and simple system for the residual stress on TCO/PET films.

Forging Fast Ion Conducting Nanochannels with Swift Heavy Ions: The Correlated Role of Local Electronic and Atomic Structure

Energy Technology Data Exchange (ETDEWEB)

Sachan, Ritesh [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Material Science and Technology Division; Cooper, Valentino R. [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Material Science and Technology Division; Liu, Bin [Univ. of Tennessee, Knoxville, TN (United States). Dept. of Materials Science and Engineering; Aidhy, Dilpuneet S. [Univ. of Wyoming, Laramie, WY (United States). Dept. of Mechanical Engineering; Voas, Brian K. [Iowa State Univ., Ames, IA (United States). Dept. of Materials Science and Engineering; Lang, Maik [Univ. of Tennessee, Knoxville, TN (United States). Dept. of Nuclear Engineering; Ou, Xin [Chinese Academy of Sciences (CAS), Shanghai (China). State Key Lab. of Functional Material for Informatics; Trautmann, Christina [GSI Helmholtz Centre for Heavy Ion Research, Darmstadt (Germany); Technical Univ. of Darmstadt (Germany). Dept. of Materials Science; Zhang, Yanwen [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Material Science and Technology Division; Univ. of Tennessee, Knoxville, TN (United States). Dept. of Materials Science and Engineering; Chisholm, Matthew F. [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Material Science and Technology Division; Weber, William J. [Univ. of Tennessee, Knoxville, TN (United States). Dept. of Materials Science and Engineering; Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Material Science and Technology Division

2016-12-19

Atomically disordered oxides have attracted significant attention in recent years due to the possibility of enhanced ionic conductivity. However, the correlation between atomic disorder, corresponding electronic structure, and the resulting oxygen diffusivity is not well understood. The disordered variants of the ordered pyrochlore structure in gadolinium titanate (Gd₂Ti₂O₇) are seen as a particularly interesting prospect due to intrinsic presence of a vacant oxygen site in the unit atomic structure, which could provide a channel for fast oxygen conduction. In this paper, we provide insights into the subangstrom scale on the disordering-induced variations in the local atomic environment and its effect on the electronic structure in high-energy ion irradiation-induced disordered nanochannels, which can be utilized as pathways for fast oxygen ion transport. With the help of an atomic plane-by-plane-resolved analyses, the work shows how the presence of various types of TiO_x polyhedral that exist in the amorphous and disordered crystalline phase modify the electronic structures relative to the ordered pyrochlore phase in Gd₂Ti₂O₇. Finally, the correlated molecular dynamics simulations on the disordered structures show a remarkable enhancement in oxygen diffusivity as compared with ordered pyrochlore lattice and make that a suitable candidate for applications requiring fast oxygen conduction.

Ionic conductivity in oxide heterostructures: the role of interfaces

Directory of Open Access Journals (Sweden)

Emiliana Fabbri, Daniele Pergolesi and Enrico Traversa

2010-01-01

Full Text Available Rapidly growing attention is being directed to the investigation of ionic conductivity in oxide film heterostructures. The main reason for this interest arises from interfacial phenomena in these heterostructures and their applications. Recent results revealed that heterophase interfaces have faster ionic conduction pathways than the bulk or homophase interfaces. This finding can open attractive opportunities in the field of micro-ionic devices. The influence of the interfaces on the conduction properties of heterostructures is becoming increasingly important with the miniaturization of solid-state devices, which leads to an enhanced interface density at the expense of the bulk. This review aims to describe the main evidence of interfacial phenomena in ion-conducting film heterostructures, highlighting the fundamental and technological relevance and offering guidelines to understanding the interface conduction mechanisms in these structures.

Light-Enhanced Antibacterial Activity of Graphene Oxide, Mainly via Accelerated Electron Transfer.

Science.gov (United States)

Chong, Yu; Ge, Cuicui; Fang, Ge; Wu, Renfei; Zhang, He; Chai, Zhifang; Chen, Chunying; Yin, Jun-Jie

2017-09-05

Before graphene derivatives can be exploited as next-generation antimicrobials, we must understand their behavior under environmental conditions. Here, we demonstrate how exposure to simulated sunlight significantly enhances the antibacterial activity of graphene oxide (GO) and reveal the underlying mechanism. Our measurements of reactive oxygen species (ROS) showed that only singlet oxygen ( 1 O 2 ) is generated by GO exposed to simulated sunlight, which contributes only slightly to the oxidation of antioxidant biomolecules. Unexpectedly, we find the main cause of oxidation is light-induced electron-hole pairs generated on the surface of GO. These light-induced electrons promote the reduction of GO, introducing additional carbon-centered free radicals that may also enhance the antibacterial activities of GO. We conclude that GO-mediated oxidative stress mainly is ROS-independent; simulated sunlight accelerates the transfer of electrons from antioxidant biomolecules to GO, thereby destroying bacterial antioxidant systems and causing the reduction of GO. Our insights will help support the development of graphene for antibacterial applications.

Conducting single-molecule magnet materials.

Science.gov (United States)

Cosquer, Goulven; Shen, Yongbing; Almeida, Manuel; Yamashita, Masahiro

2018-05-11

Multifunctional molecular materials exhibiting electrical conductivity and single-molecule magnet (SMM) behaviour are particularly attractive for electronic devices and related applications owing to the interaction between electronic conduction and magnetization of unimolecular units. The preparation of such materials remains a challenge that has been pursued by a bi-component approach of combination of SMM cationic (or anionic) units with conducting networks made of partially oxidized (or reduced) donor (or acceptor) molecules. The present status of the research concerning the preparation of molecular materials exhibiting SMM behaviour and electrical conductivity is reviewed, describing the few molecular compounds where both SMM properties and electrical conductivity have been observed. The evolution of this research field through the years is discussed. The first reported compounds are semiconductors in spite being able to present relatively high electrical conductivity, and the SMM behaviour is observed at low temperatures where the electrical conductivity of the materials is similar to that of an insulator. During the recent years, a breakthrough has been achieved with the coexistence of high electrical conductivity and SMM behaviour in a molecular compound at the same temperature range, but so far without evidence of a synergy between these properties. The combination of high electrical conductivity with SMM behaviour requires not only SMM units but also the regular and as far as possible uniform packing of partially oxidized molecules, which are able to provide a conducting network.

Electron transfer behaviour of single-walled carbon nanotubes electro-decorated with nickel and nickel oxide layers

Energy Technology Data Exchange (ETDEWEB)

Adekunle, Abolanle S.; Ozoemena, Kenneth I. [Department of Chemistry, University of Pretoria, Pretoria 0002 (South Africa)

2008-08-01

The electron transfer behaviour of nickel film-decorated single-walled carbon nanotubes (SWCNTs-Ni) at edge plane pyrolytic graphite electrodes (EPPGEs) was investigated. The impact of SWCNTs on the redox properties of the nickel film was investigated with cyclic voltammetry and electrochemical impedance spectroscopy (EIS). From EIS data, obtained using ferrocyanide/ferricyanide as a redox probe, we show that the electrodes based on nickel and nickel oxide films follow electrical equivalent circuit models typical of partial charge transfer or adsorption-controlled kinetics, resembling the 'electrolyte-insulator-semiconductor sensors (EIS)'. From the models, we prove that EPPGE-SWCNT-Ni exhibits the least resistance to charge transport compared to other electrodes (approximately 30 times faster than the EPPGE-SWCNT-NiO, 25 times faster than EPPGE-SWCNT, and over 300 times faster than the bare EPPGE) suggesting the ability of the SWCNTs to act as efficient conducting species that facilitate electron transport of the integrated nickel and nickel oxide particles. (author)

Electronic conduction in doped multiferroic BiFeO3

Science.gov (United States)

Yang, Chan-Ho; Seidel, Jan; Kim, Sang-Yong; Gajek, M.; Yu, P.; Holcomb, M. B.; Martin, L. W.; Ramesh, R.; Chu, Y. H.

2009-03-01

Competition between multiple ground states, that are energetically similar, plays a key role in many interesting material properties and physical phenomena as for example in high-Tc superconductors (electron kinetic energy vs. electron-electron repulsion), colossal magnetoresistance (metallic state vs. charge ordered insulating state), and magnetically frustrated systems (spin-spin interactions). We are exploring the idea of similar competing phenomena in doped multiferroics by control of band-filling. In this paper we present systematic investigations of divalent Ca doping of ferroelectric BiFeO3 in terms of structural and electronic conduction properties as well as diffusion properties of oxygen vacancies.

Plasmonically sensitized metal-oxide electron extraction layers for organic solar cells.

Science.gov (United States)

Trost, S; Becker, T; Zilberberg, K; Behrendt, A; Polywka, A; Heiderhoff, R; Görrn, P; Riedl, T

2015-01-16

ZnO and TiOx are commonly used as electron extraction layers (EELs) in organic solar cells (OSCs). A general phenomenon of OSCs incorporating these metal-oxides is the requirement to illuminate the devices with UV light in order to improve device characteristics. This may cause severe problems if UV to VIS down-conversion is applied or if the UV spectral range (λ work, silver nanoparticles (AgNP) are used to plasmonically sensitize metal-oxide based EELs in the vicinity (1-20 nm) of the metal-oxide/organic interface. We evidence that plasmonically sensitized metal-oxide layers facilitate electron extraction and afford well-behaved highly efficient OSCs, even without the typical requirement of UV exposure. It is shown that in the plasmonically sensitized metal-oxides the illumination with visible light lowers the WF due to desorption of previously ionosorbed oxygen, in analogy to the process found in neat metal oxides upon UV exposure, only. As underlying mechanism the transfer of hot holes from the metal to the oxide upon illumination with hν < Eg is verified. The general applicability of this concept to most common metal-oxides (e.g. TiOx and ZnO) in combination with different photoactive organic materials is demonstrated.

Self-similar variables and the problem of nonlocal electron heat conductivity

International Nuclear Information System (INIS)

Krasheninnikov, S.I.; Bakunin, O.G.

1993-10-01

Self-similar solutions of the collisional electron kinetic equation are obtained for the plasmas with one (1D) and three (3D) dimensional plasma parameter inhomogeneities and arbitrary Z eff . For the plasma parameter profiles characterized by the ratio of the mean free path of thermal electrons with respect to electron-electron collisions, γ T , to the scale length of electron temperature variation, L, one obtains a criterion for determining the effect that tail particles with motion of the non-diffusive type have on the electron heat conductivity. For these conditions it is shown that the use of a open-quotes symmetrizedclose quotes kinetic equation for the investigation of the strong nonlocal effect of suprathermal electrons on the electron heat conductivity is only possible at sufficiently high Z eff (Z eff ≥ (L/γ T ) 1/2 ). In the case of 3D inhomogeneous plasma (spherical symmetry), the effect of the tail electrons on the heat transport is less pronounced since they are spread across the radius r

Oxidation under electron bombardment. A tool for studying the initial states of silicon oxidation

Energy Technology Data Exchange (ETDEWEB)

Carriere, B.; Deville, J.P.; El Maachi, A.

1987-06-01

The exciting beam of an Auger electron spectrometer has been used to monitor the oxidation of silicon single crystals at room temperature and very low pressures of oxygen (approx. 10/sup -7/ Torr). This process allows us to build ultra-thin layers of silica on silicon (down to 30 A) but it is mostly used to investigate the mechanisms of the initial stages of oxidation. Auger spectra recorded continuously during the oxidation process provide information on (1) the nature of the silicon-oxygen chemical bonds which are interpreted through fine structure in the Auger peak, and (2) the kinetics of oxide formation which are deduced from curves of Auger signal versus time. An account is given of the contribution of these Auger studies to the description of the intermediate oxide layer during the reaction between silicon and oxygen and the influence of surface structural disorder, induced mainly by argon-ion bombardment, is discussed in terms of reactivity and oxide coverage.

Ultrabroadband terahertz conductivity of highly doped ZnO and ITO

DEFF Research Database (Denmark)

Wang, Tianwu; Zalkovskij, Maksim; Iwaszczuk, Krzysztof

2015-01-01

The broadband complex conductivities of transparent conducting oxides (TCO), namely aluminum-doped zinc oxide (AZO), gallium-doped zinc oxide (GZO) and tin-doped indium oxide (ITO), were investigated by terahertz time domain spectroscopy (THz-TDS) in the frequency range from 0.5 to 18 THz using air...... to be more thickness dependent than GZO and ITO, indicating high importance of the surface states for electron dynamics in AZO. Finally, we measure the transmittance of the TCO films from 10 to 200 THz with Fourier transform infrared spectroscopy (FTIR) measurements, thus closing the gap between THz...

Defect studies in copper-based p-type transparent conducting oxides

Science.gov (United States)

Ameena, Fnu

Among other intrinsic open-volume defects, copper vacancy (VCu) has been theoretically identified as the major acceptor in p-type Cu-based semiconducting transparent oxides, which has potential as low-cost photovoltaic absorbers in semi-transparent solar cells. A series of positron annihilation experiments with pure Cu, Cu2O, and CuO presented strong presence of VCu and its complexes in the copper oxides. The lifetime data also showed that the density of VCu was becoming higher as the oxidation state of Cu increased which was consistent with the decrease in the formation energy of VCu. Doppler broadening measurements further indicated that electrons with low momentum made more contribution to the contributed as pure Cu oxidizes to copper oxides. The metastable defects are known to be generated in Cu2O upon illumination and it has been known to affect the performance of Cu2O-based hetero-junctions used in solar cells. The metastable effect was studied using positron annihilation lifetime spectroscopy and its data showed the change in the defect population upon light exposure and the minimal effect of light-induced electron density increase in the bulk of materials to the average lifetime of the positrons. The change in the defect population is concluded to be related to the dissociation and association of VCu -- V Cu complexes. For example, the shorter lifetime under light was ascribed to the annihilation with smaller size vacancies, which explains the dissociation of the complexes with light illumination. Doppler broadening of the annihilation was independent of light illumination, which suggested that the chemical nature of the defects remained without change upon their dissociation and association -- only the size distribution of copper vacancies varied. The delafossite metal oxides, CuMIIIO2 are emerging wide-bandgap p-type semiconductors. In this research, the formation energies of structural vacancies are calculated using Van Vechten cavity model as an attempt

Preparation of solid silver nanoparticles for inkjet printed flexible electronics with high conductivity.

Science.gov (United States)

Shen, Wenfeng; Zhang, Xianpeng; Huang, Qijin; Xu, Qingsong; Song, Weijie

2014-01-01

Silver nanoparticles (NPs) which could be kept in solid form and were easily stored without degeneration or oxidation at room temperature for a long period of time were synthesized by a simple and environmentally friendly wet chemistry method in an aqueous phase. Highly stable dispersions of aqueous silver NP inks, sintered at room temperature, for printing highly conductive tracks (∼8.0 μΩ cm) were prepared simply by dispersing the synthesized silver NP powder in water. These inks are stable, fairly homogeneous and suitable for a wide range of patterning techniques. The inks were successfully printed on paper and polyethylene terephthalate (PET) substrates using a common color printer. Upon annealing at 180 °C, the resistivity of the printed silver patterns decreased to 3.7 μΩ cm, which is close to twice that of bulk silver. Various factors affecting the resistivity of the printed silver patterns, such as annealing temperature and the number of printing cycles, were investigated. The resulting high conductivity of the printed silver patterns reached over 20% of the bulk silver value under ambient conditions, which enabled the fabrication of flexible electronic devices, as demonstrated by the inkjet printing of conductive circuits of LED devices.

Design of nanophotonic, hot-electron solar-blind ultraviolet detectors with a metal-oxide-semiconductor structure

International Nuclear Information System (INIS)

Wang, Zhiyuan; Wang, Xiaoxin; Liu, Jifeng

2014-01-01

Solar-blind ultraviolet (UV) detection refers to photon detection specifically in the wavelength range of 200 nm–320 nm. Without background noises from solar radiation, it has broad applications from homeland security to environmental monitoring. The most commonly used solid state devices for this application are wide band gap (WBG) semiconductor photodetectors (Eg > 3.5 eV). However, WBG semiconductors are difficult to grow and integrate with Si readout integrated circuits (ROICs). In this paper, we design a nanophotonic metal-oxide-semiconductor structure on Si for solar-blind UV detectors. Instead of using semiconductors as the active absorber, we use Sn nano-grating structures to absorb UV photons and generate hot electrons for internal photoemission across the Sn/SiO 2 interfacial barrier, thereby generating photocurrent between the metal and the n-type Si region upon UV excitation. Moreover, the transported hot electron has an excess kinetic energy >3 eV, large enough to induce impact ionization and generate another free electron in the conduction band of n-Si. This process doubles the quantum efficiency. On the other hand, the large metal/oxide interfacial energy barrier (>3.5 eV) also enables solar-blind UV detection by blocking the less energetic electrons excited by visible photons. With optimized design, ∼75% UV absorption and hot electron excitation can be achieved within the mean free path of ∼20 nm from the metal/oxide interface. This feature greatly enhances hot electron transport across the interfacial barrier to generate photocurrent. The simple geometry of the Sn nano-gratings and the MOS structure make it easy to fabricate and integrate with Si ROICs compared to existing solar-blind UV detection schemes. The presented device structure also breaks through the conventional notion that photon absorption by metal is always a loss in solid-state photodetectors, and it can potentially be extended to other active metal photonic devices. (paper)

Decomposition of organic pollutants in industrial Effluent induced by advanced oxidation process with Electron beam irradiation

International Nuclear Information System (INIS)

Duarte, C.L.; Sampa, M.H.O.; Rela, P.R.; Oikawa, H.; Silveira, C.G.

2001-01-01

Advanced Oxidation Process (AOP) by electron beam irradiation induce the decomposition of pollutants in industrial effluent. Experiments were conducted using a Radiation Dynamics Electron Beam Accelerator with 1.5 MeV energy and 37 Kew power. Experiments were conducted using samples from a Governmental Wastewater Treatment Plant (WTP) that receives about 20% of industrial wastewater, with the objective of use the electrons beam technology to destroy the refractory organic pollutants. Samples from WTP main Industrial Receiver Unit influent (IRU), Coarse Bar Screens effluent (CBS), Medium Bar Screens effluent (MBS), Primary Sedimentation effluent (PS) and Final Effluent (FE), were collected and irradiated in the electron beam accelerator in a batch system. The delivered doses were 5.0kGy, 10.0kGy and 20.0kGy. The electron beam irradiation showed be efficient on destroying the organic compounds delivered in these effluents mainly chloroform, dichloroethane, methyl isobutyl ketone, benzene, toluene, xylene, phenol. The necessary dose to remove 90% of the most organic compounds from industry effluent was 20 kGy. The removal of organic compounds from this complex mixture were described by the destruction G value (Gd) that were obtained for those compounds in different initial concentration and compared with literature

Effects of reduction temperature on the optoelectronic properties of diodes based on n-type Si and reduced graphene oxide doped with a conductive polymer

International Nuclear Information System (INIS)

Zeng, Jian-Jhou; Lin, Yow-Jon; Ruan, Cheng-He; Lin, Jian-Huang

2013-01-01

The effect of reduction temperature on the optoelectronic properties of diodes based on n-type Si and reduced graphene oxide (RGO) doped with a conductive polymer [poly(3,4-ethylenedioxythiophene) doped with poly(4-styrenesulfonate) (PEDOT:PSS)] was examined in this study. It is found that conductivity of RGO-doped PEDOT:PSS films increases with increasing reduction temperature of graphene oxide (GO) sheets. The improvement of electrical conductivity is considered to mainly come from the carrier mobility enhancement. In addition, the ideality factor of n-type Si/RGO-doped PEDOT:PSS diodes decreases with increasing reduction temperature of GO sheets. The device-performance improvement originates from high-mobility hole transport combined with long-lifetime electron trapping in the RGO-doped PEDOT:PSS film. In addition, note that a suitable reduction temperature is an important issue for improving the device performance. (paper)

Electrodes as Terminal Electron Acceptors in Anaerobic Ammonium Oxidation

Science.gov (United States)

Ruiz-Urigüen, M.; Jaffe, P. R.

2017-12-01

Anaerobic ammonium (NH4+) oxidation under iron (Fe) reducing conditions is a microbial- mediated process known as Feammox. This is a novel pathway in the nitrogen cycle, and a key process for alleviating NH4+ accumulation in anoxic soils, wetlands, and wastewater. Acidimicrobiaceae-bacterium A6, phylum Actinobacteria, are one type of autotrophic bacteria linked to this process. The Feammox-bacteria obtain their energy by oxidizing NH4+ and transferring the electrons to a terminal electron acceptor (TEA). Under environmental conditions, iron oxides are the TEAs. However, in this study we show that electrodes in Microbial Electrolysis Cells (MECs) or electrodes set in the field can be used as TEAs by Feammox-bacteria. The potential difference between electrodes is the driving force for electron transfer, making the reaction energetically feasible. Our results show that MECs containing Feammox cultures can remove NH4+ up to 3.5 mg/L in less than 4 hours, compared to an average of 9 mg/L in 2 weeks when cultured under traditional conditions. Concomitantly, MECs produce an average current of 30.5 A/m3 whilst dead bacteria produced low (Actinobacteria when compared to bulk soil. Electrodes as TEAs enhance electrogenic bacteria recovery and culturing. The use of MECs for the productions of Feammox-bacteria eliminates the dependence of Fe, a finite electron acceptor, therefore, allowing for continuous NH4+ removal. Finally, Fe-free Feammox-bacteria can be applied to reduce other metals of environmental concern; therefore, opening the range of possible application of Feammox-bacteria.

Thermal Conductivity of Wurtzite Zinc-Oxide from First-Principles Lattice Dynamics – a Comparative Study with Gallium Nitride

Science.gov (United States)

Wu, Xufei; Lee, Jonghoon; Varshney, Vikas; Wohlwend, Jennifer L.; Roy, Ajit K.; Luo, Tengfei

2016-01-01

Wurtzite Zinc-Oxide (w-ZnO) is a wide bandgap semiconductor that holds promise in power electronics applications, where heat dissipation is of critical importance. However, large discrepancies exist in the literature on the thermal conductivity of w-ZnO. In this paper, we determine the thermal conductivity of w-ZnO using first-principles lattice dynamics and compare it to that of wurtzite Gallium-Nitride (w-GaN) – another important wide bandgap semiconductor with the same crystal structure and similar atomic masses as w-ZnO. However, the thermal conductivity values show large differences (400 W/mK of w-GaN vs. 50 W/mK of w-ZnO at room temperature). It is found that the much lower thermal conductivity of ZnO originates from the smaller phonon group velocities, larger three-phonon scattering phase space and larger anharmonicity. Compared to w-GaN, w-ZnO has a smaller frequency gap in phonon dispersion, which is responsible for the stronger anharmonic phonon scattering, and the weaker interatomic bonds in w-ZnO leads to smaller phonon group velocities. The thermal conductivity of w-ZnO also shows strong size effect with nano-sized grains or structures. The results from this work help identify the cause of large discrepancies in w-ZnO thermal conductivity and will provide in-depth understanding of phonon dynamics for the design of w-ZnO-based electronics. PMID:26928396

Structure and conductive properties of poly(ethylene oxide)/layered double hydroxide nanocomposite polymer electrolytes

International Nuclear Information System (INIS)

Liao, C.-S.; Ye, W.-B.

2004-01-01

The oligo(ethylene oxide) modified layered double hydroxide (LDH) prepared by template method was added as a nanoscale nucleating agent into poly(ethylene oxide) (PEO) to form PEO/OLDH nanocomposite electrolytes. The effects of OLDH addition on morphology and conductivities of nanocomposite electrolytes were studied using wide-angle X-ray diffractometer, polarized optical microscopy, differential scanning calorimetry and ionic conductivity measurement. The results show that the exfoliated morphology of nanocomposites is formed due to the surface modification of LDH layers with PEO matrix compatible oligo(ethylene oxide)s. The nanoscale dispersed OLDH layers inhibit the crystal growth of PEO crystallites and result in a plenty amount of intercrystalline grain boundary within PEO/OLDH nanocomposites. The ionic conductivities of nanocomposite electrolytes are enhanced by three orders of magnitude compared to the pure PEO polymer electrolytes at ambient temperature. It can be attributed to the ease transport of Li + along intercrystalline amorphous phase. This novel nanocomposite electrolytes system with high conductivities will be benefited to fabricate the thin-film type of Li-polymer secondary battery

Realization of the Switching Mechanism in Resistance Random Access Memory™ Devices: Structural and Electronic Properties Affecting Electron Conductivity in a Hafnium Oxide-Electrode System Through First-Principles Calculations

Science.gov (United States)

Aspera, Susan Meñez; Kasai, Hideaki; Kishi, Hirofumi; Awaya, Nobuyoshi; Ohnishi, Shigeo; Tamai, Yukio

2013-01-01

The resistance random access memory (RRAM™) device, with its electrically induced nanoscale resistive switching capacity, has attracted considerable attention as a future nonvolatile memory device. Here, we propose a mechanism of switching based on an oxygen vacancy migration-driven change in the electronic properties of the transition-metal oxide film stimulated by set pulse voltages. We used density functional theory-based calculations to account for the effect of oxygen vacancies and their migration on the electronic properties of HfO2 and Ta/HfO2 systems, thereby providing a complete explanation of the RRAM™ switching mechanism. Furthermore, computational results on the activation energy barrier for oxygen vacancy migration were found to be consistent with the set and reset pulse voltage obtained from experiments. Understanding this mechanism will be beneficial to effectively realizing the materials design in these devices.

Proton dynamics in oxides: insight into the mechanics of proton conduction from quasielastic neutron scattering.

Science.gov (United States)

Karlsson, Maths

2015-01-07

This article is concerned with the use of quasielastic neutron scattering as a technique for investigation of the dynamical properties of proton conducting oxides. Currently, the main interest in these materials comes from their promise as electrolytes in future electrochemical devices and particularly through their use as electrolytes in next-generation, intermediate-temperature, fuel cells. However, the realization of such devices depends critically on the development of new, more highly proton conducting oxides. Such a development depends on increasing the current understanding of proton conduction in oxides and for this purpose quasielastic neutron scattering is an important mean. The aim of this article is to introduce the non-specialist reader to the basic principles of quasielastic neutron scattering, its advantages and disadvantages, to summarize the work that has been done on proton conducting oxides using this technique, as well as to discuss future opportunities within this field of research.

Laser ablation under different electron heat conduction models in inertial confinement fusion

Science.gov (United States)

Li, Shuanggui; Ren, Guoli; Huo, Wen Yi

2018-06-01

In this paper, we study the influence of three different electron heat conduction models on the laser ablation of gold plane target. Different from previous studies, we concentrate on the plasma conditions, the conversion efficiency from laser into soft x rays and the scaling relation of mass ablation, which are relevant to hohlraum physics study in indirect drive inertial confinement fusion. We find that the simulated electron temperature in corona region is sensitive to the electron heat conduction models. For different electron heat conduction models, there are obvious differences in magnitude and spatial profile of electron temperature. For the flux limit model, the calculated conversion efficiency is sensitive to flux limiters. In the laser ablation of gold, most of the laser energies are converted into x rays. So the scaling relation of mass ablation rate is quite different from that of low Z materials.

Coupling ultraviolet light and ultrasound irradiation with Conductive-Diamond Electrochemical Oxidation for the removal of progesterone

International Nuclear Information System (INIS)

Vidales, María J. Martín de; Barba, Silvia; Sáez, Cristina; Cañizares, Pablo; Rodrigo, Manuel A.

2014-01-01

Highlights: • Single sonolysis and photolysis technologies entail a slight progesterone removal and nil mineralization. • Synergistic effects of irradiating UV light and US are clearly observed in the oxidation rate. • The energy required by CDSEO and CDSPEO prevents against their application. • CDSEO mainly favors the mass transfer of organics to the conductive-diamond surface. • CDPEO promotes the formation of radicals in the bulk solution. - Abstract: This work focusses on the improvement of the efficiency of Conductive Diamond Electrochemical Oxidation (CDEO) by coupling US and UV irradiation in the degradation of progesterone from wastewater. Results show that CDEO is a promising technology for the degradation of progesterone, just the opposite of that observed for single sonolysis and photolysis technologies, which only entail a slight removal of progesterone and nil mineralization. Coupling UV light and US irradiations with CDEO seems to have a very positive effect, improving results obtained by single CDEO very significantly. Conductive Diamond Sono Electrochemical Oxidation (CDSEO) mainly seems to improve the transfer of pollutants to the conductive-diamond surface, while Conductive Diamond Photo Electrochemical Oxidation (CDPEO) seems to promote the formation of radicals from oxidants produced electrochemically. Soft oxidation conditions are obtained with the single application of both irradiation technologies, whereas an efficient mineralization is attained with CDEO, CDSEO, CDPEO and Conductive Diamond Sono-Photo Electrochemical Oxidation (CDSPEO). However, the high energy demands of US irradiation technologies advices against the use of CDSEO and CDSPEO

In situ Reduction and Oxidation of Nickel from Solid Oxide Fuel Cells in a Transmission Electron Microscope

DEFF Research Database (Denmark)

Faes, Antonin; Jeangros, Quentin; Wagner, Jakob Birkedal

2009-01-01

Environmental transmission electron microscopy was used to characterize in situ the reduction and oxidation of nickel from a Ni/YSZ solid oxide fuel cell anode support between 300-500{degree sign}C. The reduction is done under low hydrogen pressure. The reduction initiates at the NiO/YSZ interface...

Electronic Conductivity of Polypyrrole−Dodecyl Benzene Sulfonate Complexes

DEFF Research Database (Denmark)

West, Keld; Bay, Lasse; Nielsen, Martin Meedom

2004-01-01

The electronic conductivity of the electroactive polymer polypyrrole-dodecyl benzene sulfonate (PPy-DBS) has been characterized as function of the redox level. The polymer was synthesized with different isomers of the dopant anions: the common mixed DBS tenside and three well-defined synthetic...

Electron molecular beam epitaxy: Layer-by-layer growth of complex oxides via pulsed electron-beam deposition

International Nuclear Information System (INIS)

Comes, Ryan; Liu Hongxue; Lu Jiwei; Gu, Man; Khokhlov, Mikhail; Wolf, Stuart A.

2013-01-01

Complex oxide epitaxial film growth is a rich and exciting field, owing to the wide variety of physical properties present in oxides. These properties include ferroelectricity, ferromagnetism, spin-polarization, and a variety of other correlated phenomena. Traditionally, high quality epitaxial oxide films have been grown via oxide molecular beam epitaxy or pulsed laser deposition. Here, we present the growth of high quality epitaxial films using an alternative approach, the pulsed electron-beam deposition technique. We demonstrate all three epitaxial growth modes in different oxide systems: Frank-van der Merwe (layer-by-layer); Stranski-Krastanov (layer-then-island); and Volmer-Weber (island). Analysis of film quality and morphology is presented and techniques to optimize the morphology of films are discussed.

Mixed ionic-electronic conduction in Ni doped lanthanum gallate perovskites

Energy Technology Data Exchange (ETDEWEB)

Long, N.J.; Tuller, H.L.

1998-07-01

Lanthanum gallate is a promising material for monolithic fuel cells or oxygen pumps, i.e., one in which the electrolyte and electrodes are formed from a common phase. The authors have investigated La{sub 1{minus}x}Sr{sub x}Ga{sub 1{minus}y}Ni{sub y}O{sub 3} (LSGN{sub x{minus}y}) with x = 0.1 and y = 0.2 and 0.5 as a potential cathode material for such an electrochemical device. The {sigma}(PO{sub 2},T) for LSGN{sub 10--20} points to a p-type electronic conductivity at high PO{sub 2} and predominantly ionic conductivity at low PO{sub 2}. LSGN{sub 10-50} has an electronic conductivity suitable for SOFC applications of approximately 50 S/cm in air at high temperature. AC impedance spectroscopy on an electron blocking cell of the form M/LSG/LSGN/LSG/M was used to isolate the ionic conductivity in the LSGN{sub 10--20} material. The ionic conductivity was found to have a similar magnitude and activation energy to that of undoped LSG material with {sigma}{sub i} = 0.12 S/cm at 800 C and E{sub A} = 1.0 {+-} 0.1 eV. Thermal expansion measurements on the LSGN materials were characterized as a function of temperature and dopant level and were found to match that of the electrolyte under operating conditions.

Electronic structure and ionicity of actinide oxides from first principles

DEFF Research Database (Denmark)

Petit, Leon; Svane, Axel; Szotek, Z.

2010-01-01

The ground-state electronic structures of the actinide oxides AO, A2O3, and AO2 (A=U, Np, Pu, Am, Cm, Bk, and Cf) are determined from first-principles calculations, using the self-interaction corrected local spin-density approximation. Emphasis is put on the degree of f-electron localization, whi...

The influence of reduced graphene oxide on electrical conductivity of LiFePO4-based composite as cathode material

International Nuclear Information System (INIS)

Arifin, Muhammad; Aimon, Akfiny Hasdi; Winata, Toto; Abdullah, Mikrajuddin; Iskandar, Ferry

2016-01-01

LiFePO 4 is fascinating cathode active materials for Li-ion batteries application because of their high electrochemical performance such as a stable voltage at 3.45 V and high specific capacity at 170 mAh.g −1 . However, their low intrinsic electronic conductivity and low ionic diffusion are still the hindrance for their further application on Li-ion batteries. Therefore, the efforts to improve their conductivity are very important to elevate their prospecting application as cathode materials. Herein, we reported preparation of additional of reduced Graphene Oxide (rGO) into LiFePO 4 -based composite via hydrothermal method and the influence of rGO on electrical conductivity of LiFePO 4 −based composite by varying mass of rGO in composition. Vibration of LiFePO 4 -based composite was detected on Fourier Transform Infrared Spectroscopy (FTIR) spectra, while single phase of LiFePO 4 nanocrystal was observed on X-Ray Diffraction (XRD) pattern, it furthermore, Scanning Electron Microscopy (SEM) images showed that rGO was distributed around LiFePO4-based composite. Finally, the 4-point probe measurement result confirmed that the optimum electrical conductivity is in additional 2 wt% rGO for range 1 to 2 wt% rGO

Two-electron electrochemical oxidation of quercetin and kaempferol changes only the flavonoid C-ring

DEFF Research Database (Denmark)

Jørgensen, Lars; Cornett, Claus; Justesen, Ulla

1998-01-01

Bulk electrolysis of the antioxidant flavonoids quercetin and kaempferol in acetonitrile both yield a single oxidation product in two-electron processes. The oxidation products are more polar than their parent compounds, with an increased molecular weight of 16g/mol, and were identified as 2......-(3,4-dihydroxybenzoyl)-2,4,6-trihydroxy-3 (2H)-benzofuranone and 2-(4-hydroxybenzoyl)-2,4,6-trihydroxy-3(2H)-benzofuranone for quercetin and kaempferol, respectively. Two-electron oxidation of the parent flavonoid is suggested to yield a 3,4-flavandione with unchanged substitution pattern in the A- and B-ring, which...... may rearrange to form the substituted 3(2H)-benzofuranone through the chalcan-trione ring-chain tautomer. The acidity of the 3-OH group is suggested to determine the fate of the flavonoid phenoxyl radical originally formed by one-electron oxidation, as no well-defined oxidation product of luteolin...

Thermal conductivity of electron-irradiated graphene

Science.gov (United States)

Weerasinghe, Asanka; Ramasubramaniam, Ashwin; Maroudas, Dimitrios

2017-10-01

We report results of a systematic analysis of thermal transport in electron-irradiated, including irradiation-induced amorphous, graphene sheets based on nonequilibrium molecular-dynamics simulations. We focus on the dependence of the thermal conductivity, k, of the irradiated graphene sheets on the inserted irradiation defect density, c, as well as the extent of defect passivation with hydrogen atoms. While the thermal conductivity of irradiated graphene decreases precipitously from that of pristine graphene, k0, upon introducing a low vacancy concentration, c reduction of the thermal conductivity with the increasing vacancy concentration exhibits a weaker dependence on c until the amorphization threshold. Beyond the onset of amorphization, the dependence of thermal conductivity on the vacancy concentration becomes significantly weaker, and k practically reaches a plateau value. Throughout the range of c and at all hydrogenation levels examined, the correlation k = k0(1 + αc)-1 gives an excellent description of the simulation results. The value of the coefficient α captures the overall strength of the numerous phonon scattering centers in the irradiated graphene sheets, which include monovacancies, vacancy clusters, carbon ring reconstructions, disorder, and a rough nonplanar sheet morphology. Hydrogen passivation increases the value of α, but the effect becomes very minor beyond the amorphization threshold.

Bending of conjugated molecular wires and its effect on electron conduction properties

International Nuclear Information System (INIS)

Das, Bidisa

2010-01-01

The electronic structure and electron transport properties of simple conjugated molecular wires like oligophenylene ethynylene (OPE) and oligophenylene vinylene (OPV) are studied under compression. If artificially confined to a given shorter length, the oligomers tend to bend and bending causes a loss in the overlap of the conjugated molecular orbitals. Theoretical modeling of electronic transport has been carried out for all undistorted and compressed OPE/OPV oligomers. OPV exists in step-like or V-like conformations and they have the same stability with very similar frontier molecular orbitals. The conductances of these molecular wires are calculated when inserted between two gold probes and the conductances for OPV are found to be comparable to OPE when the interfaces are same. The conductance decreases with bending due to the gradual loss in overlap of the molecular orbitals. It is also found that the conductances of the molecular wires decrease very strongly if the terminal sulfur atom is simultaneously bonded to hydrogen and a gold surface, thus reflecting the importance of the interface in determining the conductance in two-probe systems. From the conductance studies it may be concluded that if one or more benzene rings of OPE are rotated from coplanar conditions, the orthogonal molecular orbitals may completely block the electronic transport, rendering the molecule insulating.

Charging effects during focused electron beam induced deposition of silicon oxide

NARCIS (Netherlands)

de Boer, Sanne K.; van Dorp, Willem F.; De Hosson, Jeff Th. M.

2011-01-01

This paper concentrates on focused electron beam induced deposition of silicon oxide. Silicon oxide pillars are written using 2, 4, 6, 8, 10-pentamethyl-cyclopenta-siloxane (PMCPS) as precursor. It is observed that branching of the pillar occurs above a minimum pillar height. The branching is

Rare earth oxide doping in oxide cathodes

International Nuclear Information System (INIS)

Engelsen, Daniel den; Gaertner, Georg

2006-01-01

The effect on life performance and poisoning with O 2 by doping oxide cathodes with rare earth oxides and pseudo rare earth oxides, notably yttria, is qualitatively explained in terms of electrolysis of BaO during emission of electrons. Doped cathodes show less electrolysis and consume therefore less Ba during life: consequently, doped cathodes have a better life performance. However, the lower Ba-production makes doped cathodes more sensitive to oxygen poisoning. The experimentally found relation between conductivity and yttria concentration was the motive to propose a new model for the crystal imperfections in BaO. In this new imperfection model most Y 3+ -ions will combine with barium vacancies, therefore, the increase of the conductivity is modest and also the effect on the position of the Fermi level is modest. By assuming a combination of bulk and surface conductivity, the agreement between experiment and theory can be improved further

Measurement of thermal conductivity of the oxide coating on autoclaved monel-400

International Nuclear Information System (INIS)

Dua, A.K.; George, V.C.; Agarwala, R.P.

1982-01-01

Thermal conductivity of the oxide coating on monel-400 has been measured by a direct method. The oxide coating is applied on an electrically conducting wire having stable characteristics. The wire is placed in a constant temperature bath and a constant direct current is passed through it. The wire gets heated and loses heat to the surrounding. Temperature is measured by considering it as a resistance thermometer. A convection heat transfer coefficient, which is difficult to measure experimentally but is involved in the analytical expression for thermal conductivity, is eliminated by connecting a second uncoated wire of a noble metal having similar surface finish as that of the coated wire in series with it. The accuracy of the method is nearly six percent. However, the method is not easily applicable for very thin (thickness <= 1μ), highly porous coatings and materials having relatively large thermal conductivity. (M.G.B.)

Single Molecule Conductance of Oligothiophene Derivatives

Science.gov (United States)

Dell, Emma J.

to sample similar conformers. This work demonstrates that the conductance of bithiophene displays a strong dependence on the conformational fluctuations accessible within a given junction configuration, and that the symmetry of such small molecules can significantly influence their conductance behavior. Next, the single-molecule conductance of a family of oligothiophenes comprising one to six thiophene units was measured. An anomalous behavior was found: the peak of the conductance histogram distribution did not follow a clear exponential decay with increasing number of thiophene units in the chain. The electronic properties of the materials were characterized by optical spectroscopy and electrochemistry to gain an understanding of the factors affecting the conductance of these molecules. Different conformers in the junction were postulated to be a contributing factor to the anomalous trend in the observed conductance as a function of molecule length. Then, the electronic properties of the thiophene-1,1-dioxide unit were investigated. These motifs have become synthetically accessible in the last decade, due to Rozen's unprecedentedly potent oxidizing reagent - HOF˙CH 3CN - which has been shown to be powerful yet selective enough to oxidize thiophenes in various environments. The resulting thiophene-1,1-dioxides show great promise for electronic devices. The oxidation chemistry of thiophenes was expanded and tuning of the frontier energy levels was demonstrated through combining electron poor and electron rich units. Finally, charge carriers in single-molecule junctions were shown to be tunable within a family of molecules containing these thiophene-1,1-dioxide (TDO) building blocks. Oligomers of TDO were designed in order to increase electron affinity, maintain delocalized frontier orbitals, while significantly decreasing the transport gap. Through thermopower measurements, the dominant charge carriers were shown to change from holes to electrons as the number of

Respiration sensor made from indium tin oxide-coated conductive fabrics

Science.gov (United States)

Kim, Sun Hee; Lee, Joo Hyeon; Jee, Seung Hyun

2015-02-01

Conductive fabrics with new properties and applications have been the subject of extensive research over the last few years, with wearable respiration sensors attracting much attention. Different methods can be used to obtain fabrics that are electrically conducting, an essential property for various applications. For instance, fabrics can be coated with conductive polymers. Here, indium tin oxide (ITO)-coated conductive fabrics with cross-linked polyvinyl alcohol (C-PVA) were prepared using a doctor-blade. The C-PVA was employed in the synthesis to bind ITO on the fabrics with the highest possible mechanical strength. The feasibility of a respiration sensor prepared using the ITO-coated conductive fabric was investigated. The ITO-coated conductive fabric with the C-PVA was demonstrated to have a high potential for use in respiration sensors.

Highly active bidirectional electron transfer by a self-assembled electroactive reduced-graphene-oxide-hybridized biofilm.

Science.gov (United States)

Yong, Yang-Chun; Yu, Yang-Yang; Zhang, Xinhai; Song, Hao

2014-04-22

Low extracellular electron transfer performance is often a bottleneck in developing high-performance bioelectrochemical systems. Herein, we show that the self-assembly of graphene oxide and Shewanella oneidensis MR-1 formed an electroactive, reduced-graphene-oxide-hybridized, three-dimensional macroporous biofilm, which enabled highly efficient bidirectional electron transfers between Shewanella and electrodes owing to high biomass incorporation and enhanced direct contact-based extracellular electron transfer. This 3D electroactive biofilm delivered a 25-fold increase in the outward current (oxidation current, electron flux from bacteria to electrodes) and 74-fold increase in the inward current (reduction current, electron flux from electrodes to bacteria) over that of the naturally occurring biofilms. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Stretchable, Twisted Conductive Microtubules for Wearable Computing, Robotics, Electronics, and Healthcare

OpenAIRE

Thanh Nho Do; Yon Visell

2017-01-01

Stretchable and flexible multifunctional electronic components, including sensors and actuators, have received increasing attention in robotics, electronics, wearable, and healthcare applications. Despite advances, it has remained challenging to design analogs of many electronic components to be highly stretchable, to be efficient to fabricate, and to provide control over electronic performance. Here, we describe highly elastic sensors and interconnects formed from thin, twisted conductive mi...

An internal report: Electron Spectroscopy of the Oxidation and Aging of U and Pu

Energy Technology Data Exchange (ETDEWEB)

Tobin, J. G. [Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)

2015-04-27

Uranium and Plutonium are highly reactive elements that undergo not only chemical reactions but also nuclear reactions. This can lead to possibly significant materials degradation, a matter of potentially great concern. Here, the issue of the electronic structure changes that occur with oxidation and radiological aging will be addressed, in a fairly empirical manner. In essence, the sensitivity of various electron spectroscopic techniques to oxidation and aging will be surveyed and discussed, including the apparent limitations. It will be found that 5d and 4d X-ray absorption and electron energy loss are essentially blind to the changes corresponding to oxidation and aging in U and Pu.

Ionic conductivity of perovskite LaCoO3 measured by oxygen permeation technique

NARCIS (Netherlands)

Chen, C.H.; Kruidhof, H.; Bouwmeester, Henricus J.M.; Burggraaf, Anthonie; Burggraaf, A.J.

1997-01-01

Oxygen permeation measurement is demonstrated, not only for a mixed oxide ionic and electronic conductor, but also as a new alternative to determine ambipolar conductivities, which can be usually reduced to be partial conductivities (either ionic or electronic). As a model system and an end member

Enhanced reducibility and electronic conductivity of Nb or W doped Ce0.9Gd0.1O1.95 - δ

DEFF Research Database (Denmark)

Chatzichristodoulou, Christodoulos; Ricote, Sandrine; Foghmoes, Søren Preben Vagn

2015-01-01

The transport and thermomechanical properties of acceptor (Gd) and donor (Nb or W) co-doped ceria were investigated. The solubility limit of Nb in Ce0.9Gd0.1O2 - δ (CGO10) exceeds 4 at.%, whereas that of W is approximately 2 at.%. Both the thermal and stoichiometric expansion coefficients...... are decreased relative to that of CGO10. Charge compensation of the donor dopants takes place primarily by annihilation of oxide ion vacancies, and a sharp decrease in ionic mobility is observed upon Nb or W doping of CGO10. On the other hand, the n-type electronic conductivity, associated with the reduction...... of Ce4+, increases upon doping with Nb or W, due to enhanced reducibility of cerium. This is beneficial for applications where electronic conductivity is also required, like oxygen permeation membranes. Modeling shows that 4 at.% Nb or W doped CGO10 will deliver higher oxygen fluxes than CGO10, due...

Evidence for single metal two electron oxidative addition and reductive elimination at uranium.

Science.gov (United States)

Gardner, Benedict M; Kefalidis, Christos E; Lu, Erli; Patel, Dipti; McInnes, Eric J L; Tuna, Floriana; Wooles, Ashley J; Maron, Laurent; Liddle, Stephen T

2017-12-01

Reversible single-metal two-electron oxidative addition and reductive elimination are common fundamental reactions for transition metals that underpin major catalytic transformations. However, these reactions have never been observed together in the f-block because these metals exhibit irreversible one- or multi-electron oxidation or reduction reactions. Here we report that azobenzene oxidises sterically and electronically unsaturated uranium(III) complexes to afford a uranium(V)-imido complex in a reaction that satisfies all criteria of a single-metal two-electron oxidative addition. Thermolysis of this complex promotes extrusion of azobenzene, where H-/D-isotopic labelling finds no isotopomer cross-over and the non-reactivity of a nitrene-trap suggests that nitrenes are not generated and thus a reductive elimination has occurred. Though not optimally balanced in this case, this work presents evidence that classical d-block redox chemistry can be performed reversibly by f-block metals, and that uranium can thus mimic elementary transition metal reactivity, which may lead to the discovery of new f-block catalysis.

Analysis of sources of bulk conductivity change in saturated silica sand after unbuffered TCE oxidation by permanganate.

Science.gov (United States)

Hort, Ryan D; Revil, André; Munakata-Marr, Junko

2014-09-01

Time lapse resistivity surveys could potentially improve monitoring of permanganate-based in situ chemical oxidation (ISCO) of organic contaminants such as trichloroethene (TCE) by tracking changes in subsurface conductivity that result from injection of permanganate and oxidation of the contaminant. Bulk conductivity and pore fluid conductivity changes during unbuffered TCE oxidation using permanganate are examined through laboratory measurements and conductivity modeling using PHREEQC in fluid samples and porous media samples containing silica sand. In fluid samples, oxidation of one TCE molecule produces three chloride ions and one proton, resulting in an increase in fluid electrical conductivity despite the loss of two permanganate ions in the reaction. However, in saturated sand samples in which up to 8mM TCE was oxidized, at least 94% of the fluid conductivity associated with the presence of protons was removed within 3h of sand contact, most likely through protonation of silanol groups found on the surface of the sand grains. Minor conductivity effects most likely associated with pH-dependent reductive dissolution of manganese dioxide were also observed but not accounted for in pore-fluid conductivity modeling. Unaccounted conductivity effects resulted in an under-calculation of post-reaction pore fluid conductivity of 2.1% to 5.5%. Although small increases in the porous media formation factor resulting from precipitation of manganese dioxide were detected (about 3%), these increases could not be confirmed to be statistically significant. Both injection of permanganate and oxidation of TCE cause increases in bulk conductivity that would be detectable through time-lapse resistivity surveys in field conditions. Copyright © 2014 Elsevier B.V. All rights reserved.

Electron transport through supported biomembranes at the nanoscale by conductive atomic force microscopy

International Nuclear Information System (INIS)

Casuso, I; Fumagalli, L; Samitier, J; Padros, E; Reggiani, L; Akimov, V; Gomila, G

2007-01-01

We present a reliable methodology to perform electron transport measurements at the nanoscale on supported biomembranes by conductive atomic force microscopy (C-AFM). It allows measurement of both (a) non-destructive conductive maps and (b) force controlled current-voltage characteristics in wide voltage bias range in a reproducible way. Tests experiments were performed on purple membrane monolayers, a two-dimensional (2D) crystal lattice of the transmembrane protein bacteriorhodopsin. Non-destructive conductive images show uniform conductivity of the membrane with isolated nanometric conduction defects. Current-voltage characteristics under different compression conditions show non-resonant tunneling electron transport properties, with two different conduction regimes as a function of the applied bias, in excellent agreement with theoretical predictions. This methodology opens the possibility for a detailed study of electron transport properties of supported biological membranes, and of soft materials in general

Electron transport through supported biomembranes at the nanoscale by conductive atomic force microscopy

Energy Technology Data Exchange (ETDEWEB)

Casuso, I [Department Electronica, Universitat de Barcelona and Laboratori de Nanobioenginyeria-IBEC, Parc CientIfic de Barcelona, Barcelona (Spain); Fumagalli, L [Department Electronica, Universitat de Barcelona and Laboratori de Nanobioenginyeria-IBEC, Parc CientIfic de Barcelona, Barcelona (Spain); Samitier, J [Department Electronica, Universitat de Barcelona and Laboratori de Nanobioenginyeria-IBEC, Parc CientIfic de Barcelona, Barcelona (Spain); Padros, E [Unitat de BiofIsica, Departamento de BioquImica i de Biologia Molecular, Facultat de Medicina i Centre d' Estudis en BiofIsica, Universitat Autonoma de Barcelona, Barcelona (Spain); Reggiani, L [CNR-INFM National Nanotechnology Laboratory, Dipartimento di Ingegneria dell' Innovazione, Universita di Lecce, Lecce (Italy); Akimov, V [CNR-INFM National Nanotechnology Laboratory, Dipartimento di Ingegneria dell' Innovazione, Universita di Lecce, Lecce (Italy); Gomila, G [Department Electronica, Universitat de Barcelona and Laboratori de Nanobioenginyeria-IBEC, Parc CientIfic de Barcelona, Barcelona (Spain)

2007-11-21

We present a reliable methodology to perform electron transport measurements at the nanoscale on supported biomembranes by conductive atomic force microscopy (C-AFM). It allows measurement of both (a) non-destructive conductive maps and (b) force controlled current-voltage characteristics in wide voltage bias range in a reproducible way. Tests experiments were performed on purple membrane monolayers, a two-dimensional (2D) crystal lattice of the transmembrane protein bacteriorhodopsin. Non-destructive conductive images show uniform conductivity of the membrane with isolated nanometric conduction defects. Current-voltage characteristics under different compression conditions show non-resonant tunneling electron transport properties, with two different conduction regimes as a function of the applied bias, in excellent agreement with theoretical predictions. This methodology opens the possibility for a detailed study of electron transport properties of supported biological membranes, and of soft materials in general.

Engineering Mixed Ionic Electronic Conduction in La 0.8 Sr 0.2 MnO 3+ δ Nanostructures through Fast Grain Boundary Oxygen Diffusivity

KAUST Repository

Saranya, Aruppukottai M.

2015-04-09

© 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. Nanoionics has become an increasingly promising field for the future development of advanced energy conversion and storage devices, such as batteries, fuel cells, and supercapacitors. Particularly, nanostructured materials offer unique properties or combinations of properties as electrodes and electrolytes in a range of energy devices. However, the enhancement of the mass transport properties at the nanoscale has often been found to be difficult to implement in nanostructures. Here, an artificial mixed ionic electronic conducting oxide is fabricated by grain boundary (GB) engineering thin films of La0.8Sr0.2MnO3+δ. This electronic conductor is converted into a good mixed ionic electronic conductor by synthesizing a nanostructure with high density of vertically aligned GBs with high concentration of strain-induced defects. Since this type of GBs present a remarkable enhancement of their oxide-ion mass transport properties (of up to six orders of magnitude at 773 K), it is possible to tailor the electrical nature of the whole material by nanoengineering, especially at low temperatures. The presented results lead to fundamental insights into oxygen diffusion along GBs and to the application of these engineered nanomaterials in new advanced solid state ionics devices such are micro-solid oxide fuel cells or resistive switching memories. An electronic conductor such as La0.8Sr0.2MnO3+δ is converted into a good mixed ionic electronic conductor by synthesizing a nanostructure with excellent electronic and oxygen mass transport properties. Oxygen diffusion highways are created by promoting a high concentration of strain-induced defects in the grain boundary region. This novel strategy opens the way for synthesizing new families of artificial mixed ionic-electronic conductors by design.

Thermal conductivity of graphene with defects induced by electron beam irradiation

Science.gov (United States)

Malekpour, Hoda; Ramnani, Pankaj; Srinivasan, Srilok; Balasubramanian, Ganesh; Nika, Denis L.; Mulchandani, Ashok; Lake, Roger K.; Balandin, Alexander A.

2016-07-01

We investigate the thermal conductivity of suspended graphene as a function of the density of defects, ND, introduced in a controllable way. High-quality graphene layers are synthesized using chemical vapor deposition, transferred onto a transmission electron microscopy grid, and suspended over ~7.5 μm size square holes. Defects are induced by irradiation of graphene with the low-energy electron beam (20 keV) and quantified by the Raman D-to-G peak intensity ratio. As the defect density changes from 2.0 × 1010 cm-2 to 1.8 × 1011 cm-2 the thermal conductivity decreases from ~(1.8 +/- 0.2) × 103 W mK-1 to ~(4.0 +/- 0.2) × 102 W mK-1 near room temperature. At higher defect densities, the thermal conductivity reveals an intriguing saturation-type behavior at a relatively high value of ~400 W mK-1. The thermal conductivity dependence on the defect density is analyzed using the Boltzmann transport equation and molecular dynamics simulations. The results are important for understanding phonon - point defect scattering in two-dimensional systems and for practical applications of graphene in thermal management.We investigate the thermal conductivity of suspended graphene as a function of the density of defects, ND, introduced in a controllable way. High-quality graphene layers are synthesized using chemical vapor deposition, transferred onto a transmission electron microscopy grid, and suspended over ~7.5 μm size square holes. Defects are induced by irradiation of graphene with the low-energy electron beam (20 keV) and quantified by the Raman D-to-G peak intensity ratio. As the defect density changes from 2.0 × 1010 cm-2 to 1.8 × 1011 cm-2 the thermal conductivity decreases from ~(1.8 +/- 0.2) × 103 W mK-1 to ~(4.0 +/- 0.2) × 102 W mK-1 near room temperature. At higher defect densities, the thermal conductivity reveals an intriguing saturation-type behavior at a relatively high value of ~400 W mK-1. The thermal conductivity dependence on the defect density is

Characterization of Li-rich layered oxides by using transmission electron microscope

Directory of Open Access Journals (Sweden)

Hu Zhao

2017-07-01

Full Text Available Lithium-rich layered oxides (LrLOs deliver extremely high specific capacities and are considered to be promising candidates for electric vehicle and smart grid applications. However, the application of LrLOs needs further understanding of the structural complexity and dynamic evolution of monoclinic and rhombohedral phases, in order to overcome the issues including voltage decay, poor rate capability, initial irreversible capacity loss and etc. The development of aberration correction for the transmission electron microscope and concurrent progress in electron spectroscopy, have fueled rapid progress in the understanding of the mechanism of such issues. New techniques based on the transmission electron microscope are first surveyed, and the applications of these techniques for the study of the structure, migration of transition metal, and the activation of oxygen of LrLOs are then explored in detail, with a particular focus on the mechanism of voltage decay. Keywords: Lithium-ion battery, Transmission electron microscope, Lithium-rich layered oxide, Cathode material

Electron beam induced conductivity in 'PET' and 'FEP'

International Nuclear Information System (INIS)

Walzade, S.J.; Jog, J.P.; Dake, S.B.; Bhoraskar, S.V.

1983-01-01

Electron Beam Induced Conductivity (EBIC), classified into EBIC (bulk) and EBIC (surface) have been measured in PET and FEP respectively. The peculiar oscillatory nature of the induced gain versus beam energy variations is explained in terms of the spatial distributions of the trapping centres near the surface of the polymers. (author)

The oxidation kinetics for sublimates formed during niobium electron-beam remelting

International Nuclear Information System (INIS)

Chumarev, V.M.; Gulyaeva, R.I.; Mar'evich, V.P.; Upolovnikova, A.G.; Udoeva, L.Yu.

2003-01-01

The oxidation of sublimates of Nb-Al electron beam remelting is investigated under conditions of isothermal and continuous heating in the air. It is stated that basic oxidation products are niobium and aluminium oxides, as well as aluminium niobates of variable composition of Al 2 O 3 · mNb 2 O 5 . The more aluminium enriched sublimates possess an increased resistance to oxidation. Formed in sublimates NbAl 3 intermetallic compound features the highest heat resistance. Oxidation parameters are determined by the method of nonisothermic kinetics. It is noted that the running processes exhibit a multistage nature and are limited by internal diffusion [ru

Formation of quinones by one-electron oxidation in the metabolism of benzo[a]pyrene and 6-fluorobenzo[a]pyrene

International Nuclear Information System (INIS)

Cavalieri, E.; Wong, A.; Cremonesi, P.; Warner, C.; Rogan, E.

1986-01-01

Metabolic activation of polycyclic aromatic hydrocarbons (PAH), as well as other chemical carcinogens, occurs by two major pathways: One-electron oxidation and two-electron oxidation, or monooxygenation. One-electron oxidation generates radical cations or radicals, depending on the molecule in which the oxidation occurs, whereas two-electron oxidation produces oxygenated metabolites. Radical cations of PAH are ultimate electrophilic metabolites capable of binding to cellular macromolecules to initiate the tumor process. In this paper the authors will provide evidence that one-electron oxidation is involved not only in PAH carcinogenesis, but also in the formation of certain metabolites. Metabolism of benzo[a]pyrene (BP) by cytochrome P-450 monooxygenase yields three classes of products: phenols, dihydrodiols and the quinones, 1,6-, 3,6- and 6,12- dione

Artificial electron acceptors decouple archaeal methane oxidation from sulfate reduction.

Science.gov (United States)

Scheller, Silvan; Yu, Hang; Chadwick, Grayson L; McGlynn, Shawn E; Orphan, Victoria J

2016-02-12

The oxidation of methane with sulfate is an important microbial metabolism in the global carbon cycle. In marine methane seeps, this process is mediated by consortia of anaerobic methanotrophic archaea (ANME) that live in syntrophy with sulfate-reducing bacteria (SRB). The underlying interdependencies within this uncultured symbiotic partnership are poorly understood. We used a combination of rate measurements and single-cell stable isotope probing to demonstrate that ANME in deep-sea sediments can be catabolically and anabolically decoupled from their syntrophic SRB partners using soluble artificial oxidants. The ANME still sustain high rates of methane oxidation in the absence of sulfate as the terminal oxidant, lending support to the hypothesis that interspecies extracellular electron transfer is the syntrophic mechanism for the anaerobic oxidation of methane. Copyright © 2016, American Association for the Advancement of Science.

Methodologies For Characterising Mixed Conducting Oxides For Oxygen Membrane And SOFC Cathode Application

DEFF Research Database (Denmark)

Hendriksen, Peter Vang; Søgaard, Martin; Plonczak, Pawel

2012-01-01

Two methods for detailed characterization of the process of oxygen exchange between the gas phase and a mixed conducting solid oxide are discussed. First, the use of solid electrolyte probes for measuring the change in oxygen activity over the surface of a mixed conductor is presented and advanta......Two methods for detailed characterization of the process of oxygen exchange between the gas phase and a mixed conducting solid oxide are discussed. First, the use of solid electrolyte probes for measuring the change in oxygen activity over the surface of a mixed conductor is presented...

Interface engineering for oxide electronics: tuning electronic properties by atomically controlled growth

NARCIS (Netherlands)

Huijben, Mark

2006-01-01

The main aim of this thesis is to develop a controlled growth with atomic precision for the realization of artificial perovskite structures, to exploit the exceptional physical properties of complex oxide materials such as high-temperature superconductors and conducting interfaces between band

Mechanistic interaction study of thin oxide dielectric with conducting organic electrode

International Nuclear Information System (INIS)

Sharma, Himani; Sethi, Kanika; Raj, P. Markondeya; Gerhardt, R.A.; Tummala, Rao

2012-01-01

Highlights: ► Thin film-oxide dielectric-organic electrode interface studies for investigating the leakage mechanism. ► XPS to elucidate chemical-structural changes on dielectric oxide surface. ► Correlates structural characterization data with capacitor leakage current and impedance spectroscopy characteristics. - Abstract: This paper aims at understanding the interaction of intrinsic conducting polymer, PEDT, with ALD-deposited Al 2 O 3 and thermally oxidized Ta 2 O 5 dielectrics, and the underlying mechanisms for increase in leakage currents in PEDT-based capacitors. Conducting polymers offer several advantages as electrodes for high surface area capacitors because of their lower resistance, self-healing and enhanced conformality. However, capacitors with in situ polymerized PEDT show poor electrical properties that are attributed to the interfacial interaction between the organic electrode and the oxide dielectric. This study focuses on characterizing these interactions. A combination of compositional, structural and electrical characterization techniques was applied to polymer-solid-state-capacitor to understand the interfacial chemical behavior and dielectric property deterioration of alumina and tantalum-oxide films. XPS and impedance studies were employed to understand the stiochiometric and compositional changes that occur in the dielectric film on interaction with in situ deposited PEDT. Based on the observations from several complimentary techniques, it is concluded that tantalum-pentoxide has more resistance towards chemical interaction with in situ polymerized PEDT. The thermally oxidized Ta 2 O 5 -PEDT system showed leakage current of 280 nA μF −1 at 3 V with a breakdown voltage of 30 V. On the other hand, Al 2 O 3 -PEDT capacitor showed leakage current of 50 μA μF −1 and a breakdown voltage of 40 V. The study reports direct evidence for the mechanism of resistivity drop in alumina dielectric with in situ polymerized PEDT electrode.

Low-temperature growth and electronic structures of ambipolar Yb-doped zinc tin oxide transparent thin films

Science.gov (United States)

Oh, Seol Hee; Ferblantier, Gerald; Park, Young Sang; Schmerber, Guy; Dinia, Aziz; Slaoui, Abdelilah; Jo, William

2018-05-01

The compositional dependence of the crystal structure, optical transmittance, and surface electric properties of the zinc tin oxide (Zn-Sn-O, shortened ZTO) thin films were investigated. ZTO thin films with different compositional ratios were fabricated on glass and p-silicon wafers using radio frequency magnetron sputtering. The binding energy of amorphous ZTO thin films was examined by a X-ray photoelectron spectroscopy. The optical transmittance over 70% in the visible region for all the ZTO films was observed. The optical band gap of the ZTO films was changed as a result of the competition between the Burstein-Moss effect and renormalization. An electron concentration in the films and surface work function distribution were measured by a Hall measurement and Kelvin probe force microscopy, respectively. The mobility of the n- and p-type ZTO thin films have more than 130 cm2/V s and 15 cm2/V s, respectively. We finally constructed the band structure which contains band gap, work function, and band edges such as valence band maximum and conduction band minimum of ZTO thin films. The present study results suggest that the ZTO thin film is competitive compared with the indium tin oxide, which is a representative material of the transparent conducting oxides, regarding optoelectronic devices applications.

Highly n-Type Titanium Oxide as an Electronically Active Support for Platinum in the Catalytic Oxidation of Carbon Monoxide

KAUST Repository

Baker, L. Robert; Hervier, Antoine; Seo, Hyungtak; Kennedy, Griffin; Komvopoulos, Kyriakos; Somorjai, Gabor A.

2011-01-01

-support interaction is electronic activation of surface adsorbates by charge carriers. Motivated by the goal of using electronic activation to drive nonthermal chemistry, we investigated the ability of the oxide support to mediate charge transfer. We report

Changing of the electron structure of dispersed iron oxide during interaction with amines and borofluoride

International Nuclear Information System (INIS)

Hobert, H.; Arnold, D.

1975-01-01

The mechanism of chemisorption on the surface of iron oxide was studied by Moessbauer spectroscopy performed on samples of iron oxide finely dispersed in SiO 2 . It was found from Moessbauer spectra that the interaction of the oxide with amines resulted in a reversible electron transition from the amine to the adsorbent. The interaction with BF 3 brought about an irreversible electron transition from iron to boron. (A.K.)

Secondary electron emission influenced by oxidation on the aluminum surface: the roles of the chemisorbed oxygen and the oxide layer

Science.gov (United States)

Li, Jiangtao; Hoekstra, Bart; Wang, Zhen-Bin; Qiu, Jie; Pu, Yi-Kang

2018-04-01

A relationship between the apparent secondary electron yield ({γ }{{se}}) and the oxygen coverage/oxide layer thickness on an aluminum cathode is obtained in an experiment under a controlled environment. The apparent secondary electron yield ({γ }{{se}}) is deduced from the breakdown voltage between two parallel plate electrodes in a 360 mTorr argon environment using a simple Townsend breakdown model with the assumption that the variation of the apparent secondary electron yield is dominated by the variation of the argon ion induced processes. The oxygen coverage/oxide layer thickness on the aluminum cathode is measured by a semi in situ x-ray photoemission spectroscopy equipment which is directly attached to the discharge chamber. It is found that three phases exist: (1) in the monomonolayer regime, as the oxygen coverage increases from 0 to 0.3, {γ }{{se}} decreases by nearly 40 % , (2) as the oxygen coverage increases from 0.3 to 1, {γ }{{se}} keeps nearly constant, (3) as the oxide layer thickness increases from about 0.3 nm to about 1.1 nm, {γ }{{se}} increases by 150 % . We propose that, in the submonolayer regime, the chemisorbed oxygen on the aluminum surface causes the decrease of {γ }{{se}} by creating a local potential barrier, which reduces the Auger neutralization rate and the energy gained by the Auger electrons. In the multilayer regime, as the oxide layer grows in thickness, there are three proposed mechanisms which cause the increase of {γ }{{se}}: (1) the work function decreases; (2) resonance neutralization and Auger de-excitation may exist. This is served as another channel for secondary electron production; (3) the kinetic energy of Auger electrons is increased on average, leading to a higher probability for electrons to overcome the surface potential barrier.

Nanocomposites of iridium oxide and conducting polymers as electroactive phases in biological media.

Science.gov (United States)

Moral-Vico, J; Sánchez-Redondo, S; Lichtenstein, M P; Suñol, C; Casañ-Pastor, N

2014-05-01

Much effort is currently devoted to implementing new materials in electrodes that will be used in the central nervous system, either for functional electrostimulation or for tests on nerve regeneration. Their main aim is to improve the charge capacity of the electrodes, while preventing damaging secondary reactions, such as peroxide formation, occurring while applying the electric field. Thus, hybrids may represent a new generation of materials. Two novel hybrid materials are synthesized using three known biocompatible materials tested in the neural system: polypyrrole (PPy), poly(3,4-ethylenedioxythiophene) (PEDOT) and iridium oxide (IrO2). In particular, PPy-IrO2 and PEDOT-IrO2 hybrid nanocomposite materials are prepared by chemical polymerization in hydrothermal conditions, using IrO2 as oxidizing agent. The reaction yields a significant ordered new hybrid where the conducting polymer is formed around the IrO2 nanoparticles, encapsulating them. Scanning electron microscopy and backscattering techniques show the extent of the encapsulation. Both X-ray photoelectron and Fourier transform infrared spectroscopies identify the components of the phases, as well as the absence of impurities. Electrochemical properties of the final phases in powder and pellet form are evaluated by cyclic voltammetry. Biocompatibility is tested with MTT toxicity tests using primary cultures of cortical neurons grown in vitro for 6 and 9days. Copyright © 2013 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

Dielectric response and ac conductivity analysis of hafnium oxide nanopowder

International Nuclear Information System (INIS)

Karahaliou, P K; Xanthopoulos, N; Krontiras, C A; Georga, S N

2012-01-01

The dielectric response of hafnium oxide nanopowder was studied in the frequency range of 10 -2 -10 6 MHz and in the temperature range of 20-180 °C. Broadband dielectric spectroscopy was applied and the experimental results were analyzed and discussed using the electric modulus (M*) and alternating current (ac) conductivity formalisms. The analyses of the dc conductivity and electric modulus data revealed the presence of mechanisms which are thermally activated, both with almost the same activation energy of 1.01 eV. A fitting procedure involving the superposition of the thermally activated dc conductivity, the universal dielectric responce and the near constant loss terms has been used to describe the frequency evolution of the real part of the specific electrical conductivity. The conductivity master curve was obtained, suggesting that the time-temperature superposition principle applies for the studied system, thus implying that the conductivity mechanisms are temperature independent.

A perovskite oxide with high conductivities in both air and reducing atmosphere for use as electrode for solid oxide fuel cells

Science.gov (United States)

Lan, Rong; Cowin, Peter I.; Sengodan, Sivaprakash; Tao, Shanwen

2016-08-01

Electrode materials which exhibit high conductivities in both oxidising and reducing atmospheres are in high demand for solid oxide fuel cells (SOFCs) and solid oxide electrolytic cells (SOECs). In this paper, we investigated Cu-doped SrFe0.9Nb0.1O3-δ finding that the primitive perovskite oxide SrFe0.8Cu0.1Nb0.1O3-δ (SFCN) exhibits a conductivity of 63 Scm-1and 60 Scm-1 at 415 °C in air and 5%H2/Ar respectively. It is believed that the high conductivity in 5%H2/Ar is related to the exsolved Fe (or FeCu alloy) on exposure to a reducing atmosphere. To the best of our knowledge, the conductivity of SrFe0.8Cu0.1Nb0.1O3-δ in a reducing atmosphere is the highest of all reported oxides which also exhibit a high conductivity in air. Fuel cell performance using SrFe0.8Cu0.1Nb0.1O3-δ as the anode, (Y2O3)0.08(ZrO2)0.92 as the electrolyte and La0.8Sr0.2FeO3-δ as the cathode achieved a power density of 423 mWcm-2 at 700 °C indicating that SFCN is a promising anode for SOFCs.

A first principles investigation of the electronic structure of actinide oxides

DEFF Research Database (Denmark)

Petit, Leon; Svane, Axel; Szotek, Zdzislawa

2010-01-01

The ground state electronic structures of the actinide oxides AO, A2O3 and AO2 (A=U, Np, Pu, Am, Cm, Bk, Cf) are determined from first-principles calculations using the selfinteraction corrected local spin-density approximation. Our study reveals a strong link between preferred oxidation number...... and degree of localization. The ionic nature of the actinide oxides emerges from the fact that those oxides where the ground state is calculated to be metallic do not exist in nature, as the corresponding delocalized f-states favour the accommodation of additional O atoms into the crystal lattice....

Written-in conductive patterns on robust graphene oxide biopaper by electrochemical microstamping.

Science.gov (United States)

Hu, Kesong; Tolentino, Lorenzo S; Kulkarni, Dhaval D; Ye, Chunhong; Kumar, Satish; Tsukruk, Vladimir V

2013-12-16

The silk road: By employing silk fibroin as a binder between graphene oxide films and aluminum foil for a facile, highly localized reduction process, conductive paper is reinvented. The flexible, robust biographene papers have high toughness and electrical conductivity. This electrochemical written-in approach is readily applicable for the fabrication of conductive patterned papers with complex circuitries. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Atom states and interatomic interactions in complex perovskite-like oxides. Communication XX. Origin of electron-ionic conductivity in lanthanum gallates doped with strontium and chromium

International Nuclear Information System (INIS)

Chezhina, N.V.; Zolotukhina, N.V.; Pijr, I.V.

2006-01-01

Magnetic susceptibilities and electric conductivities of solid solutions based on lanthanum gallate containing chromium and strontium atoms in the ratio of 10 : 2 were studied. It was shown that no partial oxidation of chromium to Cr(IV) occurs when lanthanum gallate is doped with chromium and strontium simultaneously, whereas the ionic conductivity is associated with the appearance of vacancies stabilized by chromium atoms in the oxygen sublattice [ru

A Novel Method of Fabricating Flexible Transparent Conductive Large Area Graphene Film

International Nuclear Information System (INIS)

Fan Tian-Ju; Yuan Chun-Qiu; Tang Wei; Tong Song-Zhao; Huang Wei; Min Yong-Gang; Liu Yi-Dong; Epstein, Arthur J.

2015-01-01

We fabricate flexible conductive and transparent graphene films on position-emission-tomography substrates and prepare large area graphene films by graphite oxide sheets with the new technical process. The multi-layer graphene oxide sheets can be chemically reduced by HNO 3 and HI to form a highly conductive graphene film on a substrate at lower temperature. The reduced graphene oxide sheets show a high conductivity sheet with resistance of 476 Ω/sq and transmittance of 76% at 550 nm (6 layers). The technique used to produce the transparent conductive graphene thin film is facile, inexpensive, and can be tunable for a large area production applied for electronics or touch screens. (paper)

First-principles calculation on electronic properties of zinc oxide by zinc–air system

Directory of Open Access Journals (Sweden)

Ahmad Azmin Mohamad

2017-07-01

Full Text Available First-principles calculations are performed to study the electronic properties of zinc oxide (ZnO formed on an anode after discharging a Zn–air system. Prior to calculation, the ZnO is characterised by X-ray diffraction using Rietveld refinement. Diffracted patterns proved the formation of single phase ZnO, while Rietveld analysis shows that the ZnO has a hexagonal wurtzite structure with lattice parameters, a = 3.244 and c = 5.199 Å. Geometry optimisation of the hexagonal wurtzite structure of the ZnO is performed using various exchange–correlation energy functionals. The local density approximation functional method is used to explain the structure, electronic band structure and density of state properties of hexagonal ZnO. The calculated energy band gap was 0.75 eV while the density of states reveals that the O 2p (the top valence band and Zn 4s (the bottom conduction band states domination.

Electronic properties of thermally formed thin iron oxide films

International Nuclear Information System (INIS)

Wielant, J.; Goossens, V.; Hausbrand, R.; Terryn, H.

2007-01-01

The oxide layer, present between an organic coating and the substrate, guarantees adhesion of the coating and plays a determinating role in the delamination rate of the organic coating. The purpose of this study is to compare the resistive and semiconducting properties of thermal oxides formed on steel in two different atmospheres at 250 deg. C: an oxygen rich atmosphere, air, and an oxygen deficient atmosphere, N 2 . In N 2 , a magnetite layer grows while in air a duplex oxide film forms composed by an inner magnetite layer and a thin outer hematite scale. The heat treatment for different amounts of time at high temperature was used as method to sample the thickness variation and change in electronic and semiconducting properties of the thermal oxide layers. Firstly, linear voltammetric measurements were performed to have a first insight in the electrochemical behavior of the thermal oxides in a borate buffer solution. Electrochemical impedance spectroscopy in the same buffer combined with the Mott-Schottky analysis were used to determine the semiconducting properties of the thermal oxides. By spectroscopic ellipsometry (SE) and atomic force microscopy (AFM), respectively, the thickness and roughness of the oxide layers were determined supporting the physical interpretation of the voltammetric and EIS data. These measurements clearly showed that oxide layers with different constitution, oxide resistance, flatband potential and doping concentration can be grown by changing the atmosphere

Synthesis of Oxidation-Resistant Cupronickel Nanowires for Transparent Conducting Nanowire Networks

Energy Technology Data Exchange (ETDEWEB)

Rathmall, Aaron [Duke University; Nguyen, Minh [Duke University; Wiley, Benjamin J [Duke University

2012-01-01

Nanowires of copper can be coated from liquids to create flexible, transparent conducting films that can potentially replace the dominant transparent conductor, indium tin oxide, in displays, solar cells, organic light-emitting diodes, and electrochromic windows. One issue with these nanowire films is that copper is prone to oxidation. It was hypothesized that the resistance to oxidation could be improved by coating copper nanowires with nickel. This work demonstrates a method for synthesizing copper nanowires with nickel shells as well as the properties of cupronickel nanowires in transparent conducting films. Time- and temperature-dependent sheet resistance measurements indicate that the sheet resistance of copper and silver nanowire films will double after 3 and 36 months at room temperature, respectively. In contrast, the sheet resistance of cupronickel nanowires containing 20 mol % nickel will double in about 400 years. Coating copper nanowires to a ratio of 2:1 Cu:Ni gave them a neutral gray color, making them more suitable for use in displays and electrochromic windows. These properties, and the fact that copper and nickel are 1000 times more abundant than indium or silver, make cupronickel nanowires a promising alternative for the sustainable, efficient production of transparent conductors.

On the interplay of morphology and electronic conductivity of rotationally spun carbon fiber mats

Science.gov (United States)

Opitz, Martin; Go, Dennis; Lott, Philipp; Müller, Sandra; Stollenwerk, Jochen; Kuehne, Alexander J. C.; Roling, Bernhard

2017-09-01

Carbon-based materials are used as electrode materials in a wide range of electrochemical applications, e.g., in batteries, supercapacitors, and fuel cells. For these applications, the electronic conductivity of the materials plays an important role. Currently, porous carbon materials with complex morphologies and hierarchical pore structures are in the focus of research. The complex morphologies influence the electronic transport and may lead to an anisotropic electronic conductivity. In this paper, we unravel the influence of the morphology of rotationally spun carbon fiber mats on their electronic conductivity. By combining experiments with finite-element simulations, we compare and evaluate different electrode setups for conductivity measurements. While the "bar-type method" with two parallel electrodes on the same face of the sample yields information about the intrinsic conductivity of the carbon fibers, the "parallel-plate method" with two electrodes on opposite faces gives information about the electronic transport orthogonal to the faces. Results obtained for the van-der-Pauw method suggest that this method is not well suited for understanding morphology-transport relations in these materials.

Oxide-ion and proton conducting electrolyte materials for clean energy applications: structural and mechanistic features.

Science.gov (United States)

Malavasi, Lorenzo; Fisher, Craig A J; Islam, M Saiful

2010-11-01

This critical review presents an overview of the various classes of oxide materials exhibiting fast oxide-ion or proton conductivity for use as solid electrolytes in clean energy applications such as solid oxide fuel cells. Emphasis is placed on the relationship between structural and mechanistic features of the crystalline materials and their ion conduction properties. After describing well-established classes such as fluorite- and perovskite-based oxides, new materials and structure-types are presented. These include a variety of molybdate, gallate, apatite silicate/germanate and niobate systems, many of which contain flexible structural networks, and exhibit different defect properties and transport mechanisms to the conventional materials. It is concluded that the rich chemistry of these important systems provides diverse possibilities for developing superior ionic conductors for use as solid electrolytes in fuel cells and related applications. In most cases, a greater atomic-level understanding of the structures, defects and conduction mechanisms is achieved through a combination of experimental and computational techniques (217 references).

Balancing activity, stability and conductivity of nanoporous core-shell iridium/iridium oxide oxygen evolution catalysts

Energy Technology Data Exchange (ETDEWEB)

Kim, Yong-Tae; Lopes, Pietro Papa; Park, Shin-Ae; Lee, A-Yeong; Lim, Jinkyu; Lee, Hyunjoo; Back, Seoin; Jung, Yousung; Danilovic, Nemanja; Stamenkovic, Vojislav; Erlebacher, Jonah; Snyder, Joshua; Markovic, Nenad M.

2017-11-13

The selection of oxide materials for catalyzing the Oxygen Evolution Reaction in acid-based electrolyzers must be guided by the proper balance between activity, stability and conductivity – a challenging mission of great importance for delivering affordable and environmentally friendly hydrogen. Here we report that the highly conductive nanoporous architecture of an iridium oxide shell on a metallic iridium core, formed through the fast dealloying of osmium from an Ir25Os75 alloy, exhibits an exceptional balance between oxygen evolution activity and stability as quantified by the Activity-Stability FactorASF. Based on this metric, the nanoporous Ir/IrO2 morphology of dealloyed Ir25Os75 shows a factor of ~30 improvement ASFrelative to conventional Ir-based oxide materials and a ~8 times improvement over dealloyed Ir25Os75 nanoparticles due to optimized stability and conductivity, respectively. We propose that the Activity-Stability FactorASF is the key “metric” for determining the technological relevance of oxide-based anodic water electrolyzer catalysts.

A facile strategy for the reduction of graphene oxide and its effect on thermal conductivity of epoxy based composites

Directory of Open Access Journals (Sweden)

F. Xie

2016-06-01

Full Text Available A facile and efficient approach to reduce graphene oxide with Al particles and potassium hydroxide was developed at moderate temperature and the graphene/epoxy composite was prepared by mould casting method. The as-prepared graphene has been confirmed by Transmission electron microscopy, Fourier transform infrared spectrometer, Raman spectroscopy, X-ray diffraction, X-ray photoelectron spectroscopy and Thermal gravimetric analysis. This provides a new green way to synthesize graphene with high surface area and opens another opportunity for the production of graphene. Effects of graphene on thermal conductivity, thermal stability and microstructures of the epoxy-based composite were also investigated. The results showed that thermal conductivity of the composite exhibited a remarkable improvement with increasing content of graphene and thermal conductivity could reach 1.192 W/(m*K when filled with 3 wt% graphene. Moreover, graphene/epoxy composite exhibits good thermal stability with 3 wt% graphene.

Thin film electronic devices with conductive and transparent gas and moisture permeation barriers

Science.gov (United States)

Simpson, Lin Jay

2013-12-17

A thin film stack (100, 200) is provided for use in electronic devices such as photovoltaic devices. The stack (100, 200) may be integrated with a substrate (110) such as a light transmitting/transmissive layer. A electrical conductor layer (120, 220) is formed on a surface of the substrate (110) or device layer such as a transparent conducting (TC) material layer (120,220) with pin holes or defects (224) caused by manufacturing. The stack (100) includes a thin film (130, 230) of metal that acts as a barrier for environmental contaminants (226, 228). The metal thin film (130,230) is deposited on the conductor layer (120, 220) and formed from a self-healing metal such as a metal that forms self-terminating oxides. A permeation plug or block (236) is formed in or adjacent to the thin film (130, 230) of metal at or proximate to the pin holes (224) to block further permeation of contaminants through the pin holes (224).

FAD oxidizes the ERO1-PDI electron transfer chain: The role of membrane integrity

International Nuclear Information System (INIS)

Papp, Eszter; Nardai, Gabor; Mandl, Jozsef; Banhegyi, Gabor; Csermely, Peter

2005-01-01

The molecular steps of the electron transfer in the endoplasmic reticulum from the secreted proteins during their oxidation are relatively unknown. We present here that flavine adenine dinucleotide (FAD) is a powerful oxidizer of the oxidoreductase system, Ero1 and PDI, besides the proteins of rat liver microsomes and HepG2 hepatoma cells. Inhibition of FAD transport hindered the action of FAD. Microsomal membrane integrity was mandatory for all FAD-related oxidation steps downstream of Ero1. The PDI inhibitor bacitracin could inhibit FAD-mediated oxidation of microsomal proteins and PDI, but did not hinder the FAD-driven oxidation of Ero1. Our data demonstrated that Ero1 can utilize FAD as an electron acceptor and that FAD-driven protein oxidation goes through the Ero1-PDI pathway and requires the integrity of the endoplasmic reticulum membrane. Our findings prompt further studies to elucidate the membrane-dependent steps of PDI oxidation and the role of FAD in redox folding

Magnetoresistance of tungsten thin wafer at the multichannel surface scattering of conduction electrons

International Nuclear Information System (INIS)

Lutsishin, P.P.; Nakhodkin, T.N.

1982-01-01

The magnetoresistance of tungsten thin wafer with the (110) surface was studied at the adsorption of tungsten dioxide. The method of low-energy electron diffraction was used to study the symmetry of ordered surface structures. Using the method of the magnetoresistance measurement the character of the scattering of conduction electrons was investigated. THe dependence of magnetoresistance on the surface concentration of tungsten dioxide correlated w1th the structure of the surface layer of atoms, what was explained with allowance for diffraction of conduction electrons at the metal boundary. The magnetoresistance maximum for the (2x2) structure, which characterised decrease in surface conduction under the conditions of static skin effect, was explained by multichannel mirror reflection with the recombinations of electron and ho.le sections of Fermi Surface

One-electron oxidation of BD84, an ellipticine antitumor derivative

International Nuclear Information System (INIS)

Sekaki, A.; Gardes-Albert, M.; Houee-Levin, C.; Ferradini, C.; Rivalle, C.; Bisagni, E.; Hickel, B.

1991-01-01

The one-electron oxidation of BD84, an ellipticine-related drug, has been studied by pulse radiolysis using OH· radicals as oxidizing agents. In the absence of oxygen, R· radicals are formed. They disappear by recombination. In the presence of oxygen, R· radicals react with O 2 to give peroxy radicals RO 2 ·, which decay by a second-order process. These results are compared to those obtained for other ellipticine derivatives [fr

Molecular Functionalization of Graphene Oxide for Next-Generation Wearable Electronics.

Science.gov (United States)

Zarrin, Hadis; Sy, Serubbabel; Fu, Jing; Jiang, Gaopeng; Kang, Keunwoo; Jun, Yun-Seok; Yu, Aiping; Fowler, Michael; Chen, Zhongwei

2016-09-28

Acquiring reliable and efficient wearable electronics requires the development of flexible electrolyte membranes (EMs) for energy storage systems with high performance and minimum dependency on the operating conditions. Herein, a freestanding graphene oxide (GO) EM is functionalized with 1-hexyl-3-methylimidazolium chloride (HMIM) molecules via both covalent and noncovalent bonds induced by esterification reactions and electrostatic πcation-π stacking, respectively. Compared to the commercial polymeric membrane, the thin HMIM/GO membrane demonstrates not only slightest performance sensitivity to the operating conditions but also a superior hydroxide conductivity of 0.064 ± 0.0021 S cm(-1) at 30% RH and room temperature, which was 3.8 times higher than that of the commercial membrane at the same conditions. To study the practical application of the HMIM/GO membranes in wearable electronics, a fully solid-state, thin, flexible zinc-air battery and supercapacitor are made exhibiting high battery performance and capacitance at low humidified and room temperature environment, respectively, favored by the bonded HMIM molecules on the surface of GO nanosheets. The results of this study disclose the strong potential of manipulating the chemical structure of GO to work as a lightweight membrane in wearable energy storage devices, possessing highly stable performance at different operating conditions, especially at low relative humidity and room temperature.

Electronic and atomic structure at metal-oxide heterointerfaces

International Nuclear Information System (INIS)

Schlueter, Christoph Friedrich

2013-01-01

The results of a series of investigations on modern oxide materials using hard X-ray photoelectron spectroscopy (HAXPES) combined with the X-ray standing wave (XSW) method are described in this thesis. The combination of hard X-ray photoelectron spectroscopy and X-ray standing waves enables the electronic structure to be measured with a spatial resolution in the picometer range. Under suitable preparation conditions, a quasi two-dimensional electron gas (2DEG) is formed at the heterointerfaces of strontium titanate (SrTiO 3 ) with polar oxides, such as lanthanum aluminate (LaAlO 3 ) or lanthanum gallate (LaGaO 3 ). Samples were grown at the ESRF and in Naples and surface X-ray diffraction confirmed the excellent epitaxial quality of the films. The XSW-method was used to reconstruct images of the structure of LaAlO 3 layers in real space. These images give evidence of distortions in the LaAlO 3 structure which facilitate the compensation of the potential differences. Furthermore, XSW/HAXPES measurements permit the Ti and Sr,O contributions to the 2DEG close to the Fermi level to be identified unambiguously. The analysis shows that the 3d band crosses the Fermi level and that some density of states is associated with oxygen vacancies. Superlattices of SrTiO 3 with polar calcium cuprate (CaCuO 2 ) were investigated by HAXPES. Similar to the case of SrTiO 3 /LaAlO 3 , the polarity of CaCuO 2 should lead to a diverging surface potential. The core level spectra from Ca, Sr, and Ti show that there is a redistribution mechanism for oxygen which compensates the potential differences. When the oxygen concentration is enhanced these superstructures become superconducting (T C = 40 K). The increased oxidation of the superconducting material is revealed by the additional components in the core level spectra of the metal atoms and in the appearance of a new screening channel in Cu 2p core level spectra, which signals the hole doping of the CaCuO 2 blocks. Magnetoresistive

Electron beam induced electronic transport in alkyl amine-intercalated VOx nanotubes

International Nuclear Information System (INIS)

O'Dwyer, C.; Lavayen, V.; Clavijo-Cedeno, C.; Torres, C.M.S.

2008-01-01

The electron beam induced electronic transport in primary alkyl amine-intercalated V 2 O 5 nanotubes is investigated where the organic amine molecules are employed as molecular conductive wires to an aminosilanized substrate surface and contacted to Au interdigitated electrode contacts. The results demonstrate that the high conductivity of the nanotubes is related to the non-resonant tunnelling through the amine molecules and a reduced polaron hopping conduction through the vanadium oxide itself. Both nanotube networks and individual nanotubes exhibit similarly high conductivities where the minority carrier transport is bias dependent and nanotube diameter invariant. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Electron momentum spectroscopy of the group I and Il metal and oxides

International Nuclear Information System (INIS)

Ford, M.J.; Dorsett, H.E.; Sashin, V.A.; Bolorizadeh, M.A.; Mikajlo, E.A.; Soule de Bas, B.; Nixon, K.L.; Coleman, V.A.

2002-01-01

Full text: The group I and Il metals and oxides are relatively simple condensed phase systems that are easily accessible to theoretical studies. For this reason they have been the subject of a number of studies using a range of theoretical techniques. Calculated electronic band structures have traditionally been compared with optical, X-ray and photo emissions measurements. While these techniques provide excellent data for testing theoretical predictions they generally probe certain aspects of the electronic structure, such as special point energies or densities of states, or require considerable theoretical input for their interpretation. In this paper we present our electron momentum spectroscopy (EMS) measurements for the lighter group Il metals and oxides and group I oxides. EMS can measure directly the full band dispersions and intensities and provides a sensitive test of theoretical predictions. We compare our measurements with Hartree-Fock (HF) and density functional theory (DFT) calculations carried out within the linear combination of atomic orbitals approximation. As expected HF significantly overestimates the bandwidths and bandgaps. DFT gives reasonable overall agreement, albeit with slight overestimation of bandwidths for the oxides. The intensity distribution for the oxides show a systematic difference from all the calculations which cannot easily be explained by experimental effects such as multiple scattering in the target. This work was funded by the Australian Research Council and Flinders University. EA Mikajlo and K L Nixon acknowledge receipt of SENRAC and Ferry scholarships respectively

Balancing Hole and Electron Conduction in Ambipolar Split-Gate Thin-Film Transistors.

Science.gov (United States)

Yoo, Hocheon; Ghittorelli, Matteo; Lee, Dong-Kyu; Smits, Edsger C P; Gelinck, Gerwin H; Ahn, Hyungju; Lee, Han-Koo; Torricelli, Fabrizio; Kim, Jae-Joon

2017-07-10

Complementary organic electronics is a key enabling technology for the development of new applications including smart ubiquitous sensors, wearable electronics, and healthcare devices. High-performance, high-functionality and reliable complementary circuits require n- and p-type thin-film transistors with balanced characteristics. Recent advancements in ambipolar organic transistors in terms of semiconductor and device engineering demonstrate the great potential of this route but, unfortunately, the actual development of ambipolar organic complementary electronics is currently hampered by the uneven electron (n-type) and hole (p-type) conduction in ambipolar organic transistors. Here we show ambipolar organic thin-film transistors with balanced n-type and p-type operation. By manipulating air exposure and vacuum annealing conditions, we show that well-balanced electron and hole transport properties can be easily obtained. The method is used to control hole and electron conductions in split-gate transistors based on a solution-processed donor-acceptor semiconducting polymer. Complementary logic inverters with balanced charging and discharging characteristics are demonstrated. These findings may open up new opportunities for the rational design of complementary electronics based on ambipolar organic transistors.

Preparation of Aluminum Nanomesh Thin Films from an Anodic Aluminum Oxide Template as Transparent Conductive Electrodes

Science.gov (United States)

Li, Yiwen; Chen, Yulong; Qiu, Mingxia; Yu, Hongyu; Zhang, Xinhai; Sun, Xiao Wei; Chen, Rui

2016-02-01

We have employed anodic aluminum oxide as a template to prepare ultrathin, transparent, and conducting Al films with a unique nanomesh structure for transparent conductive electrodes. The anodic aluminum oxide template is obtained through direct anodization of a sputtered Al layer on a glass substrate, and subsequent wet etching creates the nanomesh metallic film. The optical and conductive properties are greatly influenced by experimental conditions. By tuning the anodizing time, transparent electrodes with appropriate optical transmittance and sheet resistance have been obtained. The results demonstrate that our proposed strategy can serve as a potential method to fabricate low-cost TCEs to replace conventional indium tin oxide materials.

Conductive polymer/superconductor bilayer structures

International Nuclear Information System (INIS)

McDevitt, J.T.; Haupt, S.G.; Riley, D.R.; Zhao, J.; Grassi, J.; Lo, R.K.; Jones, C.

1994-01-01

The preparation of a hybrid conducting polymer/high-temperature superconductor device consisting of a polypyrrole-coated YBa 2 Cu 3 O 7-∂ microbridge is reported. Electrochemical techniques are exploited to alter the oxidation state of the polymer and, in doing so, it is found for the first time that superconductivity can be modulated in a controllable and reproducible fashion by a polymer layer. Whereas the neutral (insulating) polypyrrole only slightly influences the electrical properties of the underlying YBa 2 Cu 3 O 7-∂ film, the oxidized (conductive) polymer depresses Tc by up to 50K. In a similar fashion, the oxidation state of the polymer is found to modulate reversibly the magnitude of J c , the superconducting critical current. Thus, a new type of molecular switch for controlling superconductivity is demonstrated. Electrochemical, resistance vs. temperature, conact resistance, atomic force microscopy and scanning electron microscopy measurements are utilized to explore the polymer/superconductor interactions

Efficient reduction of graphene oxide film by low temperature heat treatment and its effect on electrical conductivity

Energy Technology Data Exchange (ETDEWEB)

Hu, Xuebing; Chen, Zheng [Jingdezhen Ceramic Institute, Jingdezhen (China). Key Lab. of Inorganic Membrane; Yu, Yun [Shanghai Institute of Ceramics, Shanghai (China). Key Lab. of Inorganic Coating Materials; Zhang, Xiaozhen; Wang, Yongqing; Zhou, Jianer [Jingdezhen Ceramic Institute, Jingdezhen (China). Dept. of Materials Engineering

2018-03-01

Graphene-based conductive films have already attracted great attention due to their unique and outstanding physical properties. In this work, in order to develop a novel, effective method to produce these films with good electrical conductivity, a simple and green method is reported to rapidly and effectively reduce graphene oxide film using a low temperature heat treatment. The reduction of graphene oxide film is verified by XRD, FT-IR and Raman spectroscopy. Compared with graphene oxide film, the obtained reduced graphene oxide film has better electrical conductivity and its sheet resistance decreases from 25.3 kΩ x sq{sup -1} to 3.3 kΩ x sq{sup -1} after the heat treatment from 160 to 230 C. The mechanism of thermal reduction of the graphene oxide film mainly results from the removal of the oxygen-containing functional groups and the structural changes. All these results indicate that the low temperature heat treatment is a suitable and effective method for the reduction of graphene oxide film.

One-electron oxidation of DNA: mechanism and consequences.

Science.gov (United States)

Schuster, Gary B

2009-01-01

All living organisms store the information necessary to maintain life in their DNA. Any process that damages DNA and causes loss or corruption of that information threatens the viability of the organism. One-electron oxidation is such a process. Loss of an electron from DNA generates a radical cation that is located primarily on its nucleobases. The radical cation migrates reversibly through duplex DNA by hopping until it is eventually trapped in an irreversible chemical reaction. The particular sequence of nucleobases in a DNA oligomer determines both the efficiency of hopping and the specific location and nature of the damaging chemical reaction. In its normal aqueous solutions, DNA is a polyanion because of the negative charge carried by its phosphate groups. Counter ions (typically Na(+)) to the phosphate groups play an important role in facilitating both the migration of the radical cation and in its eventual reaction with H(2)O. Irreversible reaction of a radical cation with H(2)O in duplex DNA occurs preferentially at the most reactive site. In normal DNA that is comprised of the four common DNA nucleobases, reaction occurs most commonly at a guanine and results in its conversion primarily to 8-oxo-7,8-dihydroguanine (8-OxoG). Both electronic and steric effects control the outcome of this process. If the DNA oligomer does not contain a suitable guanine, then reaction of the radical cation occurs at the thymine of a TT step primarily by a tandem process. The general outcomes revealed in the one-electron oxidation of DNA oligomers in solution appear to be generally valid also for more complex DNA structures and for the cellular DNA of living organisms.

Application of hydrogen-doped In2O3 transparent conductive oxide to thin-film microcrystalline Si solar cells

International Nuclear Information System (INIS)

Koida, Takashi; Sai, Hitoshi; Kondo, Michio

2010-01-01

Hydrogen-doped In 2 O 3 (IO:H) films with high electron mobility and improved near-infrared (NIR) transparency have been applied as a transparent conducting oxide (TCO) electrode in substrate-type hydrogenated microcrystalline silicon (μc-Si:H) solar cells. The incorporation of IO:H, instead of conventional Sn-doped In 2 O 3 , improved the short-circuit current density (J sc ) and the resulting conversion efficiency. Optical analysis of the solar cells and TCO films revealed that the improvement in J sc is due to the improved spectral sensitivity in the visible and NIR wavelengths by reduction of absorption loss caused by free carriers in the TCO films.

Type IV pili of Acidithiobacillus ferrooxidans can transfer electrons from extracellular electron donors.

Science.gov (United States)

Li, Yongquan; Li, Hongyu

2014-03-01

Studies on Acidithiobacillus ferrooxidans accepting electrons from Fe(II) have previously focused on cytochrome c. However, we have discovered that, besides cytochrome c, type IV pili (Tfp) can transfer electrons. Here, we report conduction by Tfp of A. ferrooxidans analyzed with a conducting-probe atomic force microscope (AFM). The results indicate that the Tfp of A. ferrooxidans are highly conductive. The genome sequence of A. ferrooxidans ATCC 23270 contains two genes, pilV and pilW, which code for pilin domain proteins with the conserved amino acids characteristic of Tfp. Multiple alignment analysis of the PilV and PilW (pilin) proteins indicated that pilV is the adhesin gene while pilW codes for the major protein element of Tfp. The likely function of Tfp is to complete the circuit between the cell surface and Fe(II) oxides. These results indicate that Tfp of A. ferrooxidans might serve as biological nanowires transferring electrons from the surface of Fe(II) oxides to the cell surface. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Ultra-fast transient plasmonics using transparent conductive oxides

Science.gov (United States)

Ferrera, Marcello; Carnemolla, Enrico G.

2018-02-01

During the last decade, plasmonic- and metamaterial-based applications have revolutionized the field of integrated photonics by allowing for deep subwavelength confinement and full control over the effective permittivity and permeability of the optical environment. However, despite the numerous remarkable proofs of principle that have been experimentally demonstrated, few key issues remain preventing a widespread of nanophotonic technologies. Among these fundamental limitations, we remind the large ohmic losses, incompatibility with semiconductor industry standards, and largely reduced dynamic tunability of the optical properties. In this article, in the larger context of the new emerging field of all-dielectric nanophotonics, we present our recent progresses towards the study of large optical nonlinearities in transparent conducting oxides (TCOs) also giving a general overview of the most relevant and recent experimental attainments using TCO-based technology. However, it is important to underline that the present article does not represent a review paper but rather an original work with a broad introduction. Our work lays in a sort of ‘hybrid’ zone in the middle between high index contrast systems, whose behaviour is well described by applying Mie scattering theory, and standard plasmonic elements where optical modes originate from the electromagnetic coupling with the electronic plasma at the metal-to-dielectric interface. Beside remaining in the context of plasmonic technologies and retaining all the fundamental peculiarities that promoted the success of plasmonics in the first place, our strategy has the additional advantage to allow for large and ultra-fast tunability of the effective complex refractive index by accessing the index-near-zero regime in bulk materials at telecom wavelength.

Magnetic impurity coupled to interacting conduction electrons

International Nuclear Information System (INIS)

Schork, T.

1996-01-01

We consider a magnetic impurity which interacts by hybridization with a system of weakly correlated electrons and determine the energy of the ground state by means of a 1/N f expansion. The correlations among the conduction electrons are described by a Hubbard Hamiltonian and are treated to the lowest order in the interaction strength. We find that their effect on the Kondo temperature, T K , in the Kondo limit is twofold: first, the position of the impurity level is shifted due to the reduction of charge fluctuations, which reduces T K . Secondly, the bare Kondo exchange coupling is enhanced as spin fluctuations are enlarged. In total, T K increases. Both corrections require intermediate states beyond the standard Varma-Yafet ansatz. This shows that the Hubbard interaction does not just provide quasiparticles, which hybridize with the impurity, but also renormalizes the Kondo coupling. copyright 1996 The American Physical Society

Phosphorene Oxide: Stability and electronic properties of a novel 2D material

OpenAIRE

Wang, Gaoxue; Pandey, Ravindra; Karna, Shashi P.

2014-01-01

Phosphorene, the monolayer form of the (black) phosphorus, was recently exfoliated from its bulk counterpart. Phosphorene oxide, by analogy to graphene oxide, is expected to have novel chemical and electronic properties, and may provide an alternative route to synthesis of phosphorene. In this letter, we investigate physical and chemical properties of the phosphorene oxide including its formation by the oxygen adsorption on the bare phosphorene. Analysis of the phonon dispersion curves finds ...

Nitric Oxide Synthases Reveal a Role for Calmodulin in Controlling Electron Transfer

Science.gov (United States)

Abu-Soud, Husam M.; Stuehr, Dennis J.

1993-11-01

Nitric oxide (NO) is synthesized within the immune, vascular, and nervous systems, where it acts as a wide-ranging mediator of mammalian physiology. The NO synthases (EC 1.14.13.39) isolated from neurons or endothelium are calmodulin dependent. Calmodulin binds reversibly to neuronal NO synthase in response to elevated Ca2+, triggering its NO production by an unknown mechanism. Here we show that calmodulin binding allows NADPH-derived electrons to pass onto the heme group of neuronal NO synthase. Calmodulin-triggered electron transfer to heme was independent of substrate binding, caused rapid enzymatic oxidation of NADPH in the presence of O_2, and was required for NO synthesis. An NO synthase isolated from cytokine-induced macrophages that contains tightly bound calmodulin catalyzed spontaneous electron transfer to its heme, consistent with bound calmodulin also enabling electron transfer within this isoform. Together, these results provide a basis for how calmodulin may regulate NO synthesis. The ability of calmodulin to trigger electron transfer within an enzyme is unexpected and represents an additional function for calcium-binding proteins in biology.

Secondary electron emission in nanostructured porous silicon

Energy Technology Data Exchange (ETDEWEB)

Ruano, G D; Ferron, J; Koropecki, R R, E-mail: gdruano@ceride.gov.a [INTEC-UNL-CONICET, Gueemes 3450 - 3000 Santa Fe (Argentina)

2009-05-01

We studied the reversible reduction induced by ion bombardment of the secondary electron emission (SEE) yield. This effect has been modelled as due to changes in dynamically sustained dipoles related with ions and electrons penetration ranges. Such charge configuration precludes the escape of electrons from the nanoporous silicon, making the SEE dependent on the flux of impinging ions. Since this dipolar momentum depends on the electric conduction of the porous medium, by controlled oxidation of the nanoporous structure we change the conduction features of the sample, studying the impact on the SEE reduction effect. Li ion bombardment was also used with the intention of changing the parameters determining the effect. FT-IR and Auger electron spectroscopy were used to characterize the oxidation degree of the samples at different depth scales

Microbial Anaerobic Ammonium Oxidation Under Iron Reducing Conditions, Alternative Electron Acceptors

Science.gov (United States)

Ruiz-Urigüen, M.; Jaffe, P. R.

2015-12-01

Autotrophic Acidimicrobiaceae-bacterium named A6 (A6), part of the Actinobacteria phylum have been linked to anaerobic ammonium (NH4+) oxidation under iron reducing conditions. These organisms obtain their energy by oxidizing NH4+ and transferring the electrons to a terminal electron acceptor (TEA). Under environmental conditions, the TEAs are iron oxides [Fe(III)], which are reduced to Fe(II), this process is known as Feammox. Our studies indicate that alternative forms of TEAs can be used by A6, e.g. iron rich clays (i.e. nontronite) and electrodes in bioelectrochemical systems such as Microbial Electrolysis Cells (MECs), which can sustain NH4+removal and A6 biomass production. Our results show that nontronite can support Feammox and promote bacterial cell production. A6 biomass increased from 4.7 x 104 to 3.9 x 105 cells/ml in 10 days. Incubations of A6 in nontronite resulted in up to 10 times more NH4+ removal and 3 times more biomass production than when ferrihydrite is used as the Fe(III) source. Additionally, Fe in nontronite can be reoxidized by aeration and A6 can reutilize it; however, Fe is still finite in the clay. In contrast, in MECs, A6 harvest electrons from NH4+ and use an anode as an unlimited TEA, as a result current is produced. We operated multiple MECs in parallel using a single external power source, as described by Call & Logan (2011). MECs were run with an applied voltage of 0.7V and different growing mediums always containing initial 5mM NH4+. Results show that current production is favored when anthraquinone-2,6-disulfonate (AQDS), an electron shuttled, is present in the medium as it facilitates the transfer of electrons from the bacterial cell to the anode. Additionally, A6 biomass increased from 1 x 104 to 9.77 x 105cells/ml in 14 days of operation. Due to Acidimicrobiaceae-bacterium A6's ability to use various TEAs, MECs represent an alternative, iron-free form, for optimized biomass production of A6 and its application in NH4

Low temperature formation of electrode having electrically conductive metal oxide surface

Science.gov (United States)

Anders, Simone; Anders, Andre; Brown, Ian G.; McLarnon, Frank R.; Kong, Fanping

1998-01-01

A low temperature process is disclosed for forming metal suboxides on substrates by cathodic arc deposition by either controlling the pressure of the oxygen present in the deposition chamber, or by controlling the density of the metal flux, or by a combination of such adjustments, to thereby control the ratio of oxide to metal in the deposited metal suboxide coating. The density of the metal flux may, in turn, be adjusted by controlling the discharge current of the arc, by adjusting the pulse length (duration of on cycle) of the arc, and by adjusting the frequency of the arc, or any combination of these parameters. In a preferred embodiment, a low temperature process is disclosed for forming an electrically conductive metal suboxide, such as, for example, an electrically conductive suboxide of titanium, on an electrode surface, such as the surface of a nickel oxide electrode, by such cathodic arc deposition and control of the deposition parameters. In the preferred embodiment, the process results in a titanium suboxide-coated nickel oxide electrode exhibiting reduced parasitic evolution of oxygen during charging of a cell made using such an electrode as the positive electrode, as well as exhibiting high oxygen overpotential, resulting in suppression of oxygen evolution at the electrode at full charge of the cell.

Growth of conductive HfO{sub 2-x} thin films by reactive molecular beam epitaxy

Energy Technology Data Exchange (ETDEWEB)

Hildebrandt, Erwin; Kurian, Jose; Alff, Lambert [Institut fuer Materialwissenschaft, TU Darmstadt (Germany); Kleebe, Hans-Joachim [Institut fuer Angewandte Geowissenschaften, TU Darmstadt (Germany)

2009-07-01

Thin films of oxygen deficient hafnium oxide were grown on single crystal c-cut and r-cut sapphire substrates by reactive molecular beam epitaxy. The oxidation conditions during growth were varied within a wide range using RF-activated oxygen. Hafnium oxide thin films were characterized using X-ray diffraction, resistivity measurements ({rho}-T) and transmission electron microscopy (TEM). The results show a dramatic increase in conductivity of the deposited oxygen deficient hafnium oxide thin films with decreasing oxidation conditions during growth. The electrical properties of deficient hafnium oxide thin films varied from insulating over semiconducting to conducting. X-ray diffraction data as well as TEM data rule out the possibility of conductivity due to metallic hafnium.

The influence of reduced graphene oxide on electrical conductivity of LiFePO{sub 4}-based composite as cathode material

Energy Technology Data Exchange (ETDEWEB)

Arifin, Muhammad; Aimon, Akfiny Hasdi; Winata, Toto; Abdullah, Mikrajuddin [Physics of Electronic Materials Research Division, Department of Physics, Institut Teknologi Bandung, Bandung 40132 Indonesia (Indonesia); Iskandar, Ferry, E-mail: ferry@fi.itb.ac.id [Physics of Electronic Materials Research Division, Department of Physics, Institut Teknologi Bandung, Bandung 40132 Indonesia (Indonesia); Research Center for Nanoscience and Nanotechnology Institut Teknologi Bandung, Bandung 40132 Indonesia (Indonesia)

2016-02-08

LiFePO{sub 4} is fascinating cathode active materials for Li-ion batteries application because of their high electrochemical performance such as a stable voltage at 3.45 V and high specific capacity at 170 mAh.g{sup −1}. However, their low intrinsic electronic conductivity and low ionic diffusion are still the hindrance for their further application on Li-ion batteries. Therefore, the efforts to improve their conductivity are very important to elevate their prospecting application as cathode materials. Herein, we reported preparation of additional of reduced Graphene Oxide (rGO) into LiFePO{sub 4}-based composite via hydrothermal method and the influence of rGO on electrical conductivity of LiFePO{sub 4}−based composite by varying mass of rGO in composition. Vibration of LiFePO{sub 4}-based composite was detected on Fourier Transform Infrared Spectroscopy (FTIR) spectra, while single phase of LiFePO{sub 4} nanocrystal was observed on X-Ray Diffraction (XRD) pattern, it furthermore, Scanning Electron Microscopy (SEM) images showed that rGO was distributed around LiFePO4-based composite. Finally, the 4-point probe measurement result confirmed that the optimum electrical conductivity is in additional 2 wt% rGO for range 1 to 2 wt% rGO.

Protonic/electronic hybrid oxide transistor gated by chitosan and its full-swing low voltage inverter applications

Energy Technology Data Exchange (ETDEWEB)

Chao, Jin Yu [Shanxi Province Key Laboratory High Gravity Chemical Engineering, North University of China, Taiyuan 030051 (China); Ningbo Institute of Material Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201 (China); Zhu, Li Qiang, E-mail: lqzhu@nimte.ac.cn; Xiao, Hui [Ningbo Institute of Material Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201 (China); Yuan, Zhi Guo, E-mail: ncityzg@163.com [Shanxi Province Key Laboratory High Gravity Chemical Engineering, North University of China, Taiyuan 030051 (China)

2015-12-21

Modulation of charge carrier density in condensed materials based on ionic/electronic interaction has attracted much attention. Here, protonic/electronic hybrid indium-zinc-oxide (IZO) transistors gated by chitosan based electrolyte were obtained. The chitosan-based electrolyte illustrates a high proton conductivity and an extremely strong proton gating behavior. The transistor illustrates good electrical performances at a low operating voltage of ∼1.0 V such as on/off ratio of ∼3 × 10{sup 7}, subthreshold swing of ∼65 mV/dec, threshold voltage of ∼0.3 V, and mobility of ∼7 cm{sup 2}/V s. Good positive gate bias stress stabilities are obtained. Furthermore, a low voltage driven resistor-loaded inverter was built by using an IZO transistor in series with a load resistor, exhibiting a linear relationship between the voltage gain and the supplied voltage. The inverter is also used for decreasing noises of input signals. The protonic/electronic hybrid IZO transistors have potential applications in biochemical sensors and portable electronics.

Effects of keV electron irradiation on the avalanche-electron generation rates of three donors on oxidized silicon

International Nuclear Information System (INIS)

Sah, C.; Sun, J.Y.; Tzou, J.J.

1983-01-01

After keV electron beam irradiation of oxidized silicon, the avalanche-electron-injection generation rates and densities of the bulk compensating donor, the interface states, and the turnaround trap all increase. Heating at 200 0 C can anneal out these three donor-like traps, however, it cannot restore the generation rates back to their original and lower pre-keV electron irradiation values. The experimental results also indicate that all three traps may be related to the same mobile impurity species whose bonds are loosened by the keV electrons and then broken or released by the avalanche injected electrons

Structure, Raman spectra and defect chemistry modelling of conductive pyrochlore oxides

DEFF Research Database (Denmark)

Poulsen, F.W.; Glerup, M.; Holtappels, P.

2000-01-01

-O(x) and V-O on the O site, interstitial oxygens O-i", and delocalised electrons and electron holes. Four mass action law expressions govern such a model. The defect model can rationalise why home-valent doping, i.e. substitution of Zr(4+) by Ce(4+), can lead to an increase in ionic conductivity...

Characterization of palladium nanoparticles anchored on graphene oxide obtained by electron beam

Energy Technology Data Exchange (ETDEWEB)

Sobrinho, Luiza F.; Garcia, Rafael H.L.; Silva, Flávia R.O.; Neto, Almir O.; Sakata, Solange K., E-mail: lunnaquimica@usp.br, E-mail: sksakata@ipen.br [Instituto de Pesquisas Energéticas e Nucleares (IPEN/CNEN-SP), São Paulo, SP (Brazil)

2017-07-01

Fuel Cells (FCs) are devices that convert chemical energy directly in electrical and thermal energy. There are two disadvantages in the process that difficult the implementation of these new power supply. The fuel, hydrogen, is highly flammable and it is difficult to transport and the catalyst is costly. FCs have been attracting worldwide attention because they are environmental friendly and potential as clean and efficient power source. However, their durability and cost have being identified as important issues in this power supply. The objective of this work is to provide a new material based on incorporation of palladium graphene oxide as catalyst. Graphene Oxide (GO) was synthesized from graphite by the modified Hummers method, in water/alcohol medium. The one-step method to incorporate nanoparticles on this nanomaterial was developed using by electron beam (EB). Additionally, this method also reduces the Graphene Oxide (GO). This nanocomposite were characterized by thermogravimetry (TG), Fourier transform infrared (FT-IR), transmission electron microscopy (TEM), x-rays diffraction (XRD) and its potential for electro catalysis were performed by cyclic voltammetry (CV) and amperometry (CA). The results showed that the incorporation of Pd on reduced GO (rGO) by electron beam was 20-40 % in mass. The process using EB and Pd nanoparticles supported on graphene oxide as a support are an alternative, in substitution of conventional methods to the production of electrodes for fuel cells. (author)

Characterization of palladium nanoparticles anchored on graphene oxide obtained by electron beam

International Nuclear Information System (INIS)

Sobrinho, Luiza F.; Garcia, Rafael H.L.; Silva, Flávia R.O.; Neto, Almir O.; Sakata, Solange K.

2017-01-01

Fuel Cells (FCs) are devices that convert chemical energy directly in electrical and thermal energy. There are two disadvantages in the process that difficult the implementation of these new power supply. The fuel, hydrogen, is highly flammable and it is difficult to transport and the catalyst is costly. FCs have been attracting worldwide attention because they are environmental friendly and potential as clean and efficient power source. However, their durability and cost have being identified as important issues in this power supply. The objective of this work is to provide a new material based on incorporation of palladium graphene oxide as catalyst. Graphene Oxide (GO) was synthesized from graphite by the modified Hummers method, in water/alcohol medium. The one-step method to incorporate nanoparticles on this nanomaterial was developed using by electron beam (EB). Additionally, this method also reduces the Graphene Oxide (GO). This nanocomposite were characterized by thermogravimetry (TG), Fourier transform infrared (FT-IR), transmission electron microscopy (TEM), x-rays diffraction (XRD) and its potential for electro catalysis were performed by cyclic voltammetry (CV) and amperometry (CA). The results showed that the incorporation of Pd on reduced GO (rGO) by electron beam was 20-40 % in mass. The process using EB and Pd nanoparticles supported on graphene oxide as a support are an alternative, in substitution of conventional methods to the production of electrodes for fuel cells. (author)

Catalytic, Conductive Bipolar Membrane Interfaces through Layer-by-Layer Deposition for the Design of Membrane-Integrated Artificial Photosynthesis Systems.

Science.gov (United States)

McDonald, Michael B; Freund, Michael S; Hammond, Paula T

2017-11-23

In the presence of an electric field, bipolar membranes (BPMs) are capable of initiating water disassociation (WD) within the interfacial region, which can make water splitting for renewable energy in the presence of a pH gradient possible. In addition to WD catalytic efficiency, there is also the need for electronic conductivity in this region for membrane-integrated artificial photosynthesis (AP) systems. Graphene oxide (GO) was shown to catalyze WD and to be controllably reduced, which resulted in electronic conductivity. Layer-by-layer (LbL) film deposition was employed to improve GO film uniformity in the interfacial region to enhance WD catalysis and, through the addition of a conducting polymer in the process, add electronic conductivity in a hybrid film. Three different deposition methods were tested to optimize conducting polymer synthesis with the oxidant in a metastable solution and to yield the best film properties. It was found that an approach that included substrate dipping in a solution containing the expected final monomer/oxidant ratio provided the most predictable film growth and smoothest films (by UV/Vis spectroscopy and atomic force microscopy/scanning electron microscopy, respectively), whereas dipping in excess oxidant or co-spraying the oxidant and monomer produced heterogeneous films. Optimized films were found to be electronically conductive and produced a membrane ohmic drop that was acceptable for AP applications. Films were integrated into the interfacial region of BPMs and revealed superior WD efficiency (≥1.4 V at 10 mA cm -2 ) for thinner films (<10 bilayers≈100 nm) than for either the pure GO catalyst or conducting polymer individually, which indicated that there was a synergistic effect between these materials in the structure configured by the LbL method. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

Positron annihilation induced Auger electron spectroscopic studies of oxide surfaces

Science.gov (United States)