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Sample records for oxide-confined vertical-cavity surface-emitting

  1. Proton irradiation effects in oxide-confined vertical cavity surface emitting laser (VCSEL) diodes

    International Nuclear Information System (INIS)

    Barnes, C.E.; Swift, G.M.; Guertin, S.; Schwank, J.R.; Armendariz, M.G.; Hash, G.L.; Choquette, K.D.

    1999-01-01

    Vertical cavity surface emitting laser (VCSEL) diodes are employed as the emitter portion of opto-couplers that are used in space applications. Proton irradiation studies on VCSELs were performed at the Indiana University cyclotron facility. The beam energy was set at 192 MeV, the beam current was 200 nA that is equivalent to a flux of approximately 1*10 11 protons/cm 2 .s. We conclude that the oxide confined VCSELs examined in this study show more than sufficient radiation hardness for nearly all space applications. The observed proton-induced decreases in light output and the corresponding increases in laser threshold current can be explained in terms of proton-induced displacement damage which introduces non-radiative recombination centers in the active region of the lasers and causes a decrease in laser efficiency. These radiation effects accentuate the detrimental thermal effects observed at high currents. We also note that forward bias annealing is effective in these devices in producing at least partial recovery of the light output, and that this may be a viable hardness assurance technique during a flight mission. (A.C.)

  2. Self-sustained pulsation in the oxide-confined vertical-cavity surface-emitting lasers based on submonolayer InGaAs quantum dots

    International Nuclear Information System (INIS)

    Kuzmenkov, A. G.; Ustinov, V. M.; Sokolovskii, G. S.; Maleev, N. A.; Blokhin, S. A.; Deryagin, A. G.; Chumak, S. V.; Shulenkov, A. S.; Mikhrin, S. S.; Kovsh, A. R.; McRobbie, A. D.; Sibbett, W.; Cataluna, M. A.; Rafailov, E. U.

    2007-01-01

    The authors report the observation of strong self-pulsations in molecular-beam epitaxy-grown oxide-confined vertical-cavity surface-emitting lasers based on submonolayer InGaAs quantum dots. At continuous-wave operation, self-pulsations with pulse durations of 100-300 ps and repetition rates of 0.2-0.6 GHz were measured. The average optical power of the pulsations was 0.5-1.0 mW at the laser continuous-wave current values of 1.5-2.5 mA

  3. An iterative model for the steady state current distribution in oxide-confined vertical-cavity surface-emitting lasers (VCSELs)

    Science.gov (United States)

    Chuang, Hsueh-Hua

    The purpose of this dissertation is to develop an iterative model for the analysis of the current distribution in vertical-cavity surface-emitting lasers (VCSELs) using a circuit network modeling approach. This iterative model divides the VCSEL structure into numerous annular elements and uses a circuit network consisting of resistors and diodes. The measured sheet resistance of the p-distributed Bragg reflector (DBR), the measured sheet resistance of the layers under the oxide layer, and two empirical adjustable parameters are used as inputs to the iterative model to determine the resistance of each resistor. The two empirical values are related to the anisotropy of the resistivity of the p-DBR structure. The spontaneous current, stimulated current, and surface recombination current are accounted for by the diodes. The lateral carrier transport in the quantum well region is analyzed using drift and diffusion currents. The optical gain is calculated as a function of wavelength and carrier density from fundamental principles. The predicted threshold current densities for these VCSELs match the experimentally measured current densities over the wavelength range of 0.83 mum to 0.86 mum with an error of less than 5%. This model includes the effects of the resistance of the p-DBR mirrors, the oxide current-confining layer and spatial hole burning. Our model shows that higher sheet resistance under the oxide layer reduces the threshold current, but also reduces the current range over which single transverse mode operation occurs. The spatial hole burning profile depends on the lateral drift and diffusion of carriers in the quantum wells but is dominated by the voltage drop across the p-DBR region. To my knowledge, for the first time, the drift current and the diffusion current are treated separately. Previous work uses an ambipolar approach, which underestimates the total charge transferred in the quantum well region, especially under the oxide region. However, the total

  4. Vertical-cavity surface-emitting lasers for medical diagnosis

    DEFF Research Database (Denmark)

    Ansbæk, Thor

    This thesis deals with the design and fabrication of tunable Vertical-Cavity Surface-Emitting Lasers (VCSELs). The focus has been the application of tunable VCSELs in medical diagnostics, specifically OCT. VCSELs are candidates as light sources for swept-source OCT where their high sweep rate, wide...

  5. Emerging applications for vertical cavity surface emitting lasers

    International Nuclear Information System (INIS)

    Harris, J S; O'sullivan, T; Sarmiento, T; Lee, M M; Vo, S

    2011-01-01

    Vertical cavity surface emitting lasers (VCSELs) emitting at 850 nm have experienced explosive growth in the past decade because of their many attractive optical features and incredibly low-cost manufacturability. This review reviews the foundations for GaAs-based VCSEL technology as well as the materials and device challenges to extend the operating wavelength to both shorter and longer wavelengths. We discuss some of the applications that are enabled by the integration of VCSELs with both active and passive semiconductor elements for telecommunications, both in vivo and in vitro biosensing, high-density optical storage and imaging at wavelengths much less than the diffraction limit of light

  6. Vertical-cavity surface-emitting laser vapor sensor using swelling polymer reflection modulation

    DEFF Research Database (Denmark)

    Ansbæk, Thor; Nielsen, Claus Højgård; Dohn, Søren

    2012-01-01

    Vapor detection using a low-refractive index polymer for reflection modulation of the top mirror in a vertical-cavity surface-emitting laser (VCSEL) is demonstrated. The VCSEL sensor concept presents a simple method to detect the response of a sensor polymer in the presence of volatile organic...

  7. Acetone vapor sensing using a vertical cavity surface emitting laser diode coated with polystyrene

    DEFF Research Database (Denmark)

    Ansbæk, Thor; Nielsen, Claus Højgaard; Larsen, Niels Bent

    2009-01-01

    We report theoretical and experimental on a new vapor sensor, using a single-mode vertical-cavity surface-emitting laser (VCSEL) coated with a polymer sensor coating, which can detect acetone vapor at a volume fraction of 2.5%. The sensor provides the advantage of standard packaging, small form...

  8. Polymer-coated vertical-cavity surface-emitting laser diode vapor sensor

    DEFF Research Database (Denmark)

    Ansbæk, Thor; Nielsen, Claus Højgaard; Larsen, Niels Bent

    2010-01-01

    We report a new method for monitoring vapor concentration of volatile organic compounds using a vertical-cavity surface-emitting laser (VCSEL). The VCSEL is coated with a polymer thin film on the top distributed Bragg reflector (DBR). The analyte absorption is transduced to the electrical domain ...

  9. Transverse-mode-selectable microlens vertical-cavity surface-emitting laser

    DEFF Research Database (Denmark)

    Chung, Il-Sug; Debernardi, Pierluigi; Lee, Yong Tak

    2010-01-01

    A new vertical-cavity surface-emitting laser structure employing a thin microlens is suggested and numerically investigated. The laser can be made to emit in either a high-power Gaussian-shaped single-fundamental mode or a high-power doughnut-shaped higher-order mode. The physical origin...

  10. Ultrafast directional beam switching in coupled vertical-cavity surface-emitting lasers

    International Nuclear Information System (INIS)

    Ning, C. Z.; Goorjian, P.

    2001-01-01

    We propose a strategy to performing ultrafast directional beam switching using two coupled vertical-cavity surface-emitting lasers (VCSELs). The proposed strategy is demonstrated for two VCSELs of 5.6 μm in diameter placed about 1 μm apart from the edges, showing a switching speed of 42 GHz with a maximum far-field angle span of about 10 degree. [copyright] 2001 American Institute of Physics

  11. Self-mixing interferometry in vertical-cavity surface-emitting lasers for nanomechanical cantilever sensing

    Science.gov (United States)

    Larsson, David; Greve, Anders; Hvam, Jørn M.; Boisen, Anja; Yvind, Kresten

    2009-03-01

    We have experimentally investigated self-mixing interference produced by the feedback of light from a polymer micrometer-sized cantilever into a vertical-cavity surface-emitting laser for sensing applications. In particular we have investigated how the visibility of the optical output power and the junction voltage depends on the laser injection current and the distance to the cantilever. The highest power visibility obtained from cantilevers without reflective coatings was ˜60%, resulting in a very high sensitivity of 45 mV/nm with a noise floor below 1.2 mV. Different detection schemes are discussed.

  12. Self-mixing interferometry in vertical-cavity surface-emitting lasers for nanomechanical cantilever sensing

    DEFF Research Database (Denmark)

    Larsson, David; Greve, Anders; Hvam, Jørn Märcher

    2009-01-01

    We have experimentally investigated self-mixing interference produced by the feedback of light from a polymer micrometer-sized cantilever into a vertical-cavity surface-emitting laser for sensing applications. In particular we have investigated how the visibility of the optical output power...... and the junction voltage depends on the laser injection current and the distance to the cantilever. The highest power visibility obtained from cantilevers without reflective coatings was 60%, resulting in a very high sensitivity of 45 mV/nm with a noise floor below 1.2 mV. Different detection schemes are discussed....

  13. Spectral-Modulation Characteristics of Vertical-Cavity Surface-Emitting Lasers

    Science.gov (United States)

    Vas'kovskaya, M. I.; Vasil'ev, V. V.; Zibrov, S. A.; Yakovlev, V. P.; Velichanskii, V. L.

    2018-01-01

    The requirements imposed on vertical-cavity surface-emitting lasers in a number of metrological problems in which optical pumping of alkali atoms is used are considered. For lasers produced by different manufacturers, these requirements are compared with the experimentally observed spectral characteristics at a constant pump current and in the microwave modulation mode. It is shown that a comparatively small number of lasers in the microwave modulation mode make it possible to obtain the spectrum required for atomic clocks based on the coherent population-trapping effect.

  14. Sub-monolayer dot vertical-cavity surface-emitting lasers

    International Nuclear Information System (INIS)

    Blokhin, S.A.; Maleev, N.A.; Kuz'menkov, A.G.

    2006-01-01

    Vertical-cavity surface-emitting lasers (VCSELs) based on submonolayer InGaAs quantum-dot active region and doped with AlGaAs/GaAs distributed Bragg reflectors were grown by molecular beam epitaxy. 3 μm aperture single-mode VCSELs demonstrate lasing at 980 nm with threshold current of 0.6 mA, maximum output power of 4 mW and external differential efficiency as high as 68%. Ultimately low internal optical losses were measured for these multimode sub-monolayer quantum dot VCSELs [ru

  15. Transverse mode selection in vertical-cavity surface-emitting lasers via deep impurity-induced disordering

    Science.gov (United States)

    O'Brien, Thomas R.; Kesler, Benjamin; Dallesasse, John M.

    2017-02-01

    Top emission 850-nm vertical-cavity surface-emitting lasers (VCSELs) demonstrating transverse mode selection via impurity-induced disordering (IID) are presented. The IID apertures are fabricated via closed ampoule zinc diffusion. A simple 1-D plane wave model based on the intermixing of Group III atoms during IID is presented to optimize the mirror loss of higher-order modes as a function of IID strength and depth. In addition, the impact of impurity diffusion into the cap layer of the lasers is shown to improve contact resistance. Further investigation of the mode-dependent characteristics of the device imply an increase in the thermal impedance associated with the fraction of IID contained within the oxide aperture. The optimization of the ratio of the IID aperture to oxide aperture is experimentally determined. Single fundamental mode output of 1.6 mW with 30 dBm side mode suppression ratio is achieved by a 3.0 μm oxide-confined device with an IID aperture of 1.3 μm indicating an optimal IID aperture size of 43% of the oxide aperture.

  16. The simulation of thermal characteristics of 980 nm vertical cavity surface emitting lasers

    Science.gov (United States)

    Fang, Tianxiao; Cui, Bifeng; Hao, Shuai; Wang, Yang

    2018-02-01

    In order to design a single mode 980 nm vertical cavity surface emitting laser (VCSEL), a 2 μm output aperture is designed to guarantee the single mode output. The effects of different mesa sizes on the lattice temperature, the output power and the voltage are simulated under the condition of continuous working at room temperature, to obtain the optimum process parameters of mesa. It is obtained by results of the crosslight simulation software that the sizes of mesa radius are between 9.5 to 12.5 μm, which cannot only obtain the maximum output power, but also improve the heat dissipation of the device. Project supported by the Beijing Municipal Eduaction Commission (No. PXM2016_014204_500018) and the Construction of Scientific and Technological Innovation Service Ability in 2017 (No. PXM2017_014204_500034).

  17. VCSELs Fundamentals, Technology and Applications of Vertical-Cavity Surface-Emitting Lasers

    CERN Document Server

    2013-01-01

    The huge progress which has been achieved in the field is covered here, in the first comprehensive monograph on vertical-cavity surface-emitting lasers (VCSELs) since eight years. Apart from chapters reviewing the research field and the laser fundamentals, there are comprehensive updates on red and blue emitting VCSELs, telecommunication VCSELs, optical transceivers, and parallel-optical links for computer interconnects. Entirely new contributions are made to the fields of vectorial three-dimensional optical modeling, single-mode VCSELs, polarization control, polarization dynamics, very-high-speed design, high-power emission, use of high-contrast gratings, GaInNAsSb long-wavelength VCSELs, optical video links, VCSELs for optical mice and sensing, as well as VCSEL-based laser printing. The book appeals to researchers, optical engineers and graduate students.

  18. Nonlinear dynamic behaviors of an optically injected vertical-cavity surface-emitting laser

    International Nuclear Information System (INIS)

    Li Xiaofeng; Pan Wei; Luo Bin; Ma Dong; Wang Yong; Li Nuohan

    2006-01-01

    Nonlinear dynamics of a vertical-cavity surface-emitting laser (VCSEL) with external optical injection are studied numerically. We consider a master-slave configuration where the dynamic characteristics of the slave are affected by the optical injection from the master, and we also establish the corresponding Simulink model. The period-doubling route as well as the period-halving route is observed, where the regular, double-periodic, and chaotic pulsings are found. By adjusting the injection strength properly, the laser can be controlled to work at a given state. The effects of frequency detuning on the nonlinear behaviors are also investigated in terms of the bifurcation diagrams of photon density with the frequency detuning. For weak injection case, the nonlinear dynamics shown by the laser are quite different when the value of frequency detuning varies contrarily (positive and negative direction). If the optical injection is strong enough, the slave can be locked by the master even though the frequency detuning is relatively large

  19. Nonpolar III-nitride vertical-cavity surface-emitting lasers incorporating an ion implanted aperture

    KAUST Repository

    Leonard, J. T.; Cohen, D. A.; Yonkee, B. P.; Farrell, R. M.; Margalith, T.; Lee, S.; DenBaars, S. P.; Speck, J. S.; Nakamura, S.

    2015-01-01

    © 2015 AIP Publishing LLC. We report on our recent progress in improving the performance of nonpolar III-nitride vertical-cavity surface-emitting lasers (VCSELs) by using an Al ion implanted aperture and employing a multi-layer electron-beam evaporated ITO intracavity contact. The use of an ion implanted aperture improves the lateral confinement over SiNx apertures by enabling a planar ITO design, while the multi-layer ITO contact minimizes scattering losses due to its epitaxially smooth morphology. The reported VCSEL has 10 QWs, with a 3nm quantum well width, 1nm barriers, a 5nm electron-blocking layer, and a 6.95- λ total cavity thickness. These advances yield a single longitudinal mode 406nm nonpolar VCSEL with a low threshold current density (∼16kA/cm2), a peak output power of ∼12μW, and a 100% polarization ratio. The lasing in the current aperture is observed to be spatially non-uniform, which is likely a result of filamentation caused by non-uniform current spreading, lateral optical confinement, contact resistance, and absorption loss.

  20. Optoelectronic integrated circuits utilising vertical-cavity surface-emitting semiconductor lasers

    International Nuclear Information System (INIS)

    Zakharov, S D; Fyodorov, V B; Tsvetkov, V V

    1999-01-01

    Optoelectronic integrated circuits with additional optical inputs/outputs, in which vertical-cavity surface-emitting (VCSE) lasers perform the data transfer functions, are considered. The mutual relationship and the 'affinity' between optical means for data transfer and processing, on the one hand, and the traditional electronic component base, on the other, are demonstrated in the case of implementation of three-dimensional interconnects with a high transmission capacity. Attention is drawn to the problems encountered when semiconductor injection lasers are used in communication lines. It is shown what role can be played by VCSE lasers in solving these problems. A detailed analysis is made of the topics relating to possible structural and technological solutions in the fabrication of single lasers and of their arrays, and also of the problems hindering integrating of lasers into emitter arrays. Considerable attention is given to integrated circuits with optoelectronic smart pixels. Various technological methods for vertical integration of GaAs VCSE lasers with the silicon substrate of a microcircuit (chip) are discussed. (review)

  1. Nonpolar III-nitride vertical-cavity surface-emitting lasers incorporating an ion implanted aperture

    KAUST Repository

    Leonard, J. T.

    2015-07-06

    © 2015 AIP Publishing LLC. We report on our recent progress in improving the performance of nonpolar III-nitride vertical-cavity surface-emitting lasers (VCSELs) by using an Al ion implanted aperture and employing a multi-layer electron-beam evaporated ITO intracavity contact. The use of an ion implanted aperture improves the lateral confinement over SiNx apertures by enabling a planar ITO design, while the multi-layer ITO contact minimizes scattering losses due to its epitaxially smooth morphology. The reported VCSEL has 10 QWs, with a 3nm quantum well width, 1nm barriers, a 5nm electron-blocking layer, and a 6.95- λ total cavity thickness. These advances yield a single longitudinal mode 406nm nonpolar VCSEL with a low threshold current density (∼16kA/cm2), a peak output power of ∼12μW, and a 100% polarization ratio. The lasing in the current aperture is observed to be spatially non-uniform, which is likely a result of filamentation caused by non-uniform current spreading, lateral optical confinement, contact resistance, and absorption loss.

  2. Vertical cavity surface emitting lasers from all-inorganic perovskite quantum dots

    Science.gov (United States)

    Sun, Handong; Wang, Yue; Li, Xiaoming; Zeng, Haibo

    We report the breakthrough in realizing the challenging while practically desirable vertical cavity surface emitting lasers (VCSELs) based on the CsPbX3 inorganic perovskite nanocrystals (IPNCs). These laser devices feature record low threshold (9 µJ/cm2), unidirectional output (beam divergence of 3.6º) and superb stability. We show that both single-mode and multimode lasing operation are achievable in the device. In contrast to traditional metal chacogenide colloidal quantum dots based lasers where the pump thresholds for the green and blue wavelengths are typically much higher than that of the red, these CsPbX3 IPNC-VCSEL devices are able to lase with comparable thresholds across the whole visible spectral range, which is appealing for achieving single source-pumped full-color lasers. We further reveal that these lasers can operate in quasi-steady state regime, which is very practical and cost-effective. Given the facile solution processibility, our CsPbX3 IPNC-VCSEL devices may hold great potential in developing low-cost yet high-performance lasers, promising in revolutionizing the vacuum-based epitaxial semiconductor lasers.

  3. High-power, format-flexible, 885-nm vertical-cavity surface-emitting laser arrays

    Science.gov (United States)

    Wang, Chad; Talantov, Fedor; Garrett, Henry; Berdin, Glen; Cardellino, Terri; Millenheft, David; Geske, Jonathan

    2013-03-01

    High-power, format flexible, 885 nm vertical-cavity surface-emitting laser (VCSEL) arrays have been developed for solid-state pumping and illumination applications. In this approach, a common VCSEL size format was designed to enable tiling into flexible formats and operating configurations. The fabrication of a common chip size on ceramic submount enables low-cost volume manufacturing of high-power VCSEL arrays. This base VCSEL chip was designed to be 5x3.33 mm2, and produced up to 50 Watts of peak continuous wave (CW) power. To scale to higher powers, multiple chips can be tiled into a combination of series or parallel configurations tailored to the application driver conditions. In actively cooled CW operation, the VCSEL array chips were packaged onto a single water channel cooler, and we have demonstrated 0.5x1, 1x1, and 1x3 cm2 formats, producing 150, 250, and 500 Watts of peak power, respectively, in under 130 A operating current. In QCW operation, the 1x3 cm2 VCSEL module, which contains 18 VCSEL array chips packaged on a single water cooler, produced over 1.3 kW of peak power. In passively cooled packages, multiple chip configurations have been developed for illumination applications, producing over 300 Watts of peak power in QCW operating conditions. These VCSEL chips use a substrate-removed structure to allow for efficient thermal heatsinking to enable high-power operation. This scalable, format flexible VCSEL architecture can be applied to wavelengths ranging from 800 to 1100 nm, and can be used to tailor emission spectral widths and build high-power hyperspectral sources.

  4. Transverse and polarization effects in index-guided vertical-cavity surface-emitting lasers

    International Nuclear Information System (INIS)

    Torre, M. S.; Masoller, C.; Mandel, Paul

    2006-01-01

    We study numerically the polarization dynamics of vertical-cavity surface-emitting lasers (VCSEL's) operating in the fundamental transverse mode. We use an extension of the spin-flip model that not only accounts for the vector nature of the laser field, but also considers spatial transverse effects. The model assumes two orthogonal, linearly polarized fields, which are coupled to two carrier populations, associated with different spin sublevels of the conduction and valence bands in the quantum-well active region. Spatial effects are taken into account by considering transverse profiles for the two polarizations, for the two carrier populations, and for the carrier diffusion. The optical profile is the LP 01 mode, suitable for describing index-guided VCSEL's with cylindrical symmetry emitting on the fundamental transverse mode for both polarizations. We find that in small-active-region VCSEL's, fast carrier diffusion induces self-sustained oscillations of the total laser output, which are not present in larger-area devices or with slow carrier diffusion. These self-pulsations appear close to threshold, and, as the injection current increases, they grow in amplitude; however, there is saturation and the self-pulsations disappear at higher injection levels. The dependence of the oscillation amplitude on various laser parameters is investigated, and the results are found to be in good qualitative agreement with those reported by Van der Sande et al. [Opt. Lett. 29, 53 (2004)], based on a rate-equation model that takes into account transverse inhomogeneities through an intensity-dependent confinement factor

  5. Spin-controlled ultrafast vertical-cavity surface-emitting lasers

    Science.gov (United States)

    Höpfner, Henning; Lindemann, Markus; Gerhardt, Nils C.; Hofmann, Martin R.

    2014-05-01

    Spin-controlled semiconductor lasers are highly attractive spintronic devices providing characteristics superior to their conventional purely charge-based counterparts. In particular, spin-controlled vertical-cavity surface emitting lasers (spin-VCSELs) promise to offer lower thresholds, enhanced emission intensity, spin amplification, full polarization control, chirp control and ultrafast dynamics. Most important, the ability to control and modulate the polarization state of the laser emission with extraordinarily high frequencies is very attractive for many applications like broadband optical communication and ultrafast optical switches. We present a novel concept for ultrafast spin-VCSELs which has the potential to overcome the conventional speed limitation for directly modulated lasers by the relaxation oscillation frequency and to reach modulation frequencies significantly above 100 GHz. The concept is based on the coupled spin-photon dynamics in birefringent micro-cavity lasers. By injecting spin-polarized carriers in the VCSEL, oscillations of the coupled spin-photon system can by induced which lead to oscillations of the polarization state of the laser emission. These oscillations are decoupled from conventional relaxation oscillations of the carrier-photon system and can be much faster than these. Utilizing these polarization oscillations is thus a very promising approach to develop ultrafast spin-VCSELs for high speed optical data communication in the near future. Different aspects of the spin and polarization dynamics, its connection to birefringence and bistability in the cavity, controlled switching of the oscillations, and the limitations of this novel approach will be analysed theoretically and experimentally for spin-polarized VCSELs at room temperature.

  6. Optical Injection Locking of Vertical Cavity Surface-Emitting Lasers: Digital and Analog Applications

    Science.gov (United States)

    Parekh, Devang

    With the rise of mobile (cellphones, tablets, notebooks, etc.) and broadband wireline communications (Fiber to the Home), there are increasing demands being placed on transmitters for moving data from device to device and around the world. Digital and analog fiber-optic communications have been the key technology to meet this challenge, ushering in ubiquitous Internet and cable TV over the past 20 years. At the physical layer, high-volume low-cost manufacturing of semiconductor optoelectronic devices has played an integral role in allowing for deployment of high-speed communication links. In particular, vertical cavity surface emitting lasers (VCSEL) have revolutionized short reach communications and are poised to enter more markets due to their low cost, small size, and performance. However, VCSELs have disadvantages such as limited modulation performance and large frequency chirp which limits fiber transmission speed and distance, key parameters for many fiber-optic communication systems. Optical injection locking is one method to overcome these limitations without re-engineering the VCSEL at the device level. By locking the frequency and phase of the VCSEL by the direct injection of light from another laser oscillator, improved device performance is achieved in a post-fabrication method. In this dissertation, optical injection locking of VCSELs is investigated from an applications perspective. Optical injection locking of VCSELs can be used as a pathway to reduce complexity, cost, and size of both digital and analog fiber-optic communications. On the digital front, reduction of frequency chirp via bit pattern inversion for large-signal modulation is experimentally demonstrated showing up to 10 times reduction in frequency chirp and over 90 times increase in fiber transmission distance. Based on these results, a new reflection-based interferometric model for optical injection locking was established to explain this phenomenon. On the analog side, the resonance

  7. Proton Irradiation Effects in Oxide-Confined Vertical Cavity Surface Emitting Laser (VCSEL) Diodes

    International Nuclear Information System (INIS)

    Armendariz, M.G.; Barnes, C.E.; Choquette, K.D.; Guertin, S.; Hash, G.L.; Schwank, J.R.; Swift, G.M.

    1999-01-01

    Recent space experience has shown that the use of commercial optocouplers can be problematic in spacecraft, such as TOPEX/Poseidon, that must operate in significant radiation environments. Radiation--induced failures of these devices have been observed in space and have been further documented at similar radiation doses in the laboratory. The ubiquitous use of optocouplers in spacecraft systems for a variety of applications, such as electrical isolation, switching and power transfer, is indicative of the need for optocouplers that can withstand the space radiation environment. In addition, the distributed nature of their use implies that it is not particularly desirable to shield optocouplers for use in radiation environments. Thus, it will be important for the space community to have access to radiation hardened/tolerant optocouplers. For many microelectronic and photonic devices, it is difficult to achieve radiation hardness without sacrificing performance. However, in the case of optocouplers, one should be able to achieve both superior radiation hardness and performance for such characteristics as switching speed, current transfer ratio (CTR), minimum power usage and array power transfer, if standard light emitting diodes (LEDs), such as those in the commercial optocouplers mentioned above, are avoided, and VCSELs are employed as the emitter portion of the optocoupler. The physical configuration of VCSELs allows one to achieve parallel use of an array of devices and construct a multichannel optocoupler in the standard fashion with the emitters and detectors looking at each other. In addition, detectors similar in structure to the VCSELs can be fabricated which allows bidirectional functionality of the optocoupler. Recent discussions suggest that VCSELs will enjoy widespread applications in the telecommunications and data transfer fields

  8. Few-mode vertical-cavity surface-emitting laser: Optional emission of transverse modes with different polarizations

    Science.gov (United States)

    Zhong, Chuyu; Zhang, Xing; Hofmann, Werner; Yu, Lijuan; Liu, Jianguo; Ning, Yongqiang; Wang, Lijun

    2018-05-01

    Few-mode vertical-cavity surface-emitting lasers that can be controlled to emit certain modes and polarization states simply by changing the biased contacts are proposed and fabricated. By directly etching trenches in the p-doped distributed Bragg reflector, the upper mesa is separated into several submesas above the oxide layer. Individual contacts are then deposited. Each contact is used to control certain transverse modes with different polarization directions emitted from the corresponding submesa. These new devices can be seen as a prototype of compact laser sources in mode division multiplexing communications systems.

  9. High-Speed Semiconductor Vertical-Cavity Surface-Emitting Lasers for Optical Data-Transmission Systems (Review)

    Science.gov (United States)

    Blokhin, S. A.; Maleev, N. A.; Bobrov, M. A.; Kuzmenkov, A. G.; Sakharov, A. V.; Ustinov, V. M.

    2018-01-01

    The main problems of providing a high-speed operation semiconductor lasers with a vertical microcavity (so-called "vertical-cavity surface-emitting lasers") under amplitude modulation and ways to solve them have been considered. The influence of the internal properties of the radiating active region and the electrical parasitic elements of the equivalent circuit of lasers are discussed. An overview of approaches that lead to an increase of the cutoff parasitic frequency, an increase of the differential gain of the active region, the possibility of the management of mode emission composition and the lifetime of photons in the optical microcavities, and reduction of the influence of thermal effects have been presented. The achieved level of modulation bandwidth of ˜30 GHz is close to the maximum achievable for the classical scheme of the direct-current modulation, which makes it necessary to use a multilevel modulation format to further increase the information capacity of optical channels constructed on the basis of vertical-cavity surface-emitting lasers.

  10. Single-exposure two-dimensional superresolution in digital holography using a vertical cavity surface-emitting laser source array.

    Science.gov (United States)

    Granero, Luis; Zalevsky, Zeev; Micó, Vicente

    2011-04-01

    We present a new implementation capable of producing two-dimensional (2D) superresolution (SR) imaging in a single exposure by aperture synthesis in digital lensless Fourier holography when using angular multiplexing provided by a vertical cavity surface-emitting laser source array. The system performs the recording in a single CCD snapshot of a multiplexed hologram coming from the incoherent addition of multiple subholograms, where each contains information about a different 2D spatial frequency band of the object's spectrum. Thus, a set of nonoverlapping bandpass images of the input object can be recovered by Fourier transformation (FT) of the multiplexed hologram. The SR is obtained by coherent addition of the information contained in each bandpass image while generating an enlarged synthetic aperture. Experimental results demonstrate improvement in resolution and image quality.

  11. Fast pulsing dynamics of a vertical-cavity surface-emitting laser operating in the low-frequency fluctuation regime

    International Nuclear Information System (INIS)

    Sciamanna, M.; Rogister, F.; Megret, P.; Blondel, M.; Masoller, C.; Abraham, N. B.

    2003-01-01

    We analyze the dynamics of a vertical-cavity surface-emitting laser with optical feedback operating in the low-frequency fluctuation regime. By focusing on the fast pulsing dynamics, we show that the two linearly polarized modes of the laser exhibit two qualitatively different behaviors: they emit pulses in phase just after a power dropout and they emit pulses out of phase after the recovery process of the output power. As a consequence, two distinct statistical distributions of the fast pulsating total intensity are observed, either monotonically decaying from the noise level or peaked around the mean intensity value. We further show that gain self-saturation of the lasing transition strongly modifies the shape of the intensity distribution

  12. Impact of optical feedback on current-induced polarization behavior of 1550 nm vertical-cavity surface-emitting lasers.

    Science.gov (United States)

    Deng, Tao; Wu, Zheng-Mao; Xie, Yi-Yuan; Wu, Jia-Gui; Tang, Xi; Fan, Li; Panajotov, Krassimir; Xia, Guang-Qiong

    2013-06-01

    Polarization switching (PS) between two orthogonal linearly polarized fundamental modes is experimentally observed in commercial free-running 1550 nm vertical-cavity surface-emitting lasers (VCSELs) (Raycan). The characteristics of this PS are strongly modified after introducing a polarization-preserved (PP) or polarization-orthogonal (PO) optical feedback. Under the case that the external cavity is approximately 30 cm, the PP optical feedback results in the PS point shifting toward a lower injection current, and the region within which the two polarization modes coexist is enlarged with the increase of the PP feedback strength. Under too-strong PP feedback levels, the PS disappears. The impact of PO optical feedback on VCSEL polarization behavior is quite similar to that of PP optical feedback, but larger feedback strength is needed to obtain similar results.

  13. Steady-state characteristics of lateral p-n junction vertical-cavity surface-emitting lasers

    Science.gov (United States)

    Ryzhii, V.; Tsutsui, N.; Khmyrova, I.; Ikegami, T.; Vaccaro, P. O.; Taniyama, H.; Aida, T.

    2001-09-01

    We developed an analytical device model for lateral p-n junction vertical-cavity surface-emitting lasers (LJVCSELs) with a quantum well active region. The model takes into account the features of the carrier injection, transport, and recombination in LJVCSELs as well as the features of the photon propagation in the cavity. This model is used for the calculation and analysis of the LJVCSEL steady-state characteristics. It is shown that the localization of the injected electrons primarily near the p-n junction and the reabsorption of lateral propagating photons significantly effects the LJVCSELs performance, in particular, the LJVCSEL threshold current and power-current characteristics. The reincarnation of electrons and holes due to the reabsorption of lateral propagating photons can substantially decrease the threshold current.

  14. Operation of a novel hot-electron vertical-cavity surface-emitting laser

    Science.gov (United States)

    Balkan, Naci; O'Brien-Davies, Angela; Thoms, A. B.; Potter, Richard J.; Poolton, Nigel; Adams, Michael J.; Masum, J.; Bek, Alpan; Serpenguzel, Ali; Aydinli, Atilla; Roberts, John S.

    1998-07-01

    The hot Electron Light Emission and Lasing in Semiconductor Heterostructures devices (HELLISH-1) is novel surface emitter consisting of a GaAs quantum well, within the depletion region, on the n side of Ga1-xAlxAs p- n junction. It utilizes hot electron transport parallel to the layers and injection of hot electron hole pairs into the quantum well through a combination of mechanisms including tunnelling, thermionic emission and diffusion of `lucky' carriers. Super Radiant HELLISH-1 is an advanced structure incorporating a lower distributed Bragg reflector (DBR). Combined with the finite reflectivity of the upper semiconductor-air interface reflectivity it defines a quasi- resonant cavity enabling emission output from the top surface with a higher spectral purity. The output power has increased by two orders of magnitude and reduced the full width at half maximum (FWHM) to 20 nm. An upper DBR added to the structure defines HELLISH-VCSEL which is currently the first operational hot electron surface emitting laser and lases at room temperature with a 1.5 nm FWHM. In this work we demonstrate and compare the operation of UB-HELLISH-1 and HELLISH-VCSEL using experimental and theoretical reflectivity spectra over an extensive temperature range.

  15. Direct visualization of the in-plane leakage of high-order transverse modes in vertical-cavity surface-emitting lasers mediated by oxide-aperture engineering

    Science.gov (United States)

    Ledentsov, N.; Shchukin, V. A.; Kropp, J.-R.; Burger, S.; Schmidt, F.; Ledentsov, N. N.

    2016-03-01

    Oxide-confined apertures in vertical cavity surface emitting laser (VCSEL) can be engineered such that they promote leakage of the transverse optical modes from the non- oxidized core region to the selectively oxidized periphery of the device. The reason of the leakage is that the VCSEL modes in the core can be coupled to tilted modes in the periphery if the orthogonality between the core mode and the modes at the periphery is broken by the oxidation-induced optical field redistribution. Three-dimensional modeling of a practical VCSEL design reveals i) significantly stronger leakage losses for high-order transverse modes than that of the fundamental one as high-order modes have a higher field intensity close to the oxide layers and ii) narrow peaks in the far-field profile generated by the leaky component of the optical modes. Experimental 850-nm GaAlAs leaky VCSELs produced in the modeled design demonstrate i) single-mode lasing with the aperture diameters up to 5μm with side mode suppression ratio >20dB at the current density of 10kA/cm2; and ii) narrow peaks tilted at 37 degrees with respect to the vertical axis in excellent agreement with the modeling data and confirming the leaky nature of the modes and the proposed mechanism of mode selection. The results indicate that in- plane coupling of VCSELs, VCSELs and p-i-n photodiodes, VCSEL and delay lines is possible allowing novel photonic integrated circuits. We show that the approach enables design of oxide apertures, air-gap apertures, devices created by impurity-induced intermixing or any combinations of such designs through quantitative evaluation of the leaky emission.

  16. A GaInAsP/InP Vertical Cavity Surface Emitting Laser for 1.5 m m operation

    Science.gov (United States)

    Sceats, R.; Balkan, N.; Adams, M. J.; Masum, J.; Dann, A. J.; Perrin, S. D.; Reid, I.; Reed, J.; Cannard, P.; Fisher, M. A.; Elton, D. J.; Harlow, M. J.

    1999-04-01

    We present the results of our studies concerning the pulsed operation of a bulk GaInAsP/InP vertical cavity surface emitting laser (VCSEL). The device is tailored to emit at around 1.5 m m at room temperature. The structure has a 45 period n-doped GaInAsP/InP bottom distributed Bragg reflector (DBR), and a 4 period Si/Al2O3 dielectric top reflector defining a 3-l cavity. Electroluminescence from a 16 m m diameter top window was measured in the pulsed injection mode. Spectral measurements were recorded in the temperature range between 125K and 240K. Polarisation, lasing threshold current and linewidth measurements were also carried out at the same temperatures. The threshold current density has a broad minimum at temperatures between 170K and 190K, (Jth=13.2 kA/cm2), indicating a good match between the gain and the cavity resonance in this temperature range. Maximum emitted power from the VCSEL is 0.18 mW at 180K.

  17. Upstream vertical cavity surface-emitting lasers for fault monitoring and localization in WDM passive optical networks

    Science.gov (United States)

    Wong, Elaine; Zhao, Xiaoxue; Chang-Hasnain, Connie J.

    2008-04-01

    As wavelength division multiplexed passive optical networks (WDM-PONs) are expected to be first deployed to transport high capacity services to business customers, real-time knowledge of fiber/device faults and the location of such faults will be a necessity to guarantee reliability. Nonetheless, the added benefit of implementing fault monitoring capability should only incur minimal cost associated with upgrades to the network. In this work, we propose and experimentally demonstrate a fault monitoring and localization scheme based on a highly-sensitive and potentially low-cost monitor in conjunction with vertical cavity surface-emitting lasers (VCSELs). The VCSELs are used as upstream transmitters in the WDM-PON. The proposed scheme benefits from the high reflectivity of the top distributed Bragg reflector (DBR) mirror of optical injection-locked (OIL) VCSELs to reflect monitoring channels back to the central office for monitoring. Characterization of the fault monitor demonstrates high sensitivity, low bandwidth requirements, and potentially low output power. The added advantage of the proposed fault monitoring scheme incurs only a 0.5 dB penalty on the upstream transmissions on the existing infrastructure.

  18. Chaos synchronization in vertical-cavity surface-emitting laser based on rotated polarization-preserved optical feedback.

    Science.gov (United States)

    Nazhan, Salam; Ghassemlooy, Zabih; Busawon, Krishna

    2016-01-01

    In this paper, the influence of the rotating polarization-preserved optical feedback on the chaos synchronization of a vertical-cavity surface-emitting laser (VCSEL) is investigated experimentally. Two VCSELs' polarization modes (XP) and (YP) are gradually rotated and re-injected back into the VCSEL. The anti-phase dynamics synchronization of the two polarization modes is evaluated using the cross-correlation function. For a fixed optical feedback, a clear relationship is found between the cross-correlation coefficient and the polarization angle θp. It is shown that high-quality anti-phase polarization-resolved chaos synchronization is achieved at higher values of θp. The maximum value of the cross-correlation coefficient achieved is -0.99 with a zero time delay over a wide range of θp beyond 65° with a poor synchronization dynamic at θp less than 65°. Furthermore, it is observed that the antiphase irregular oscillation of the XP and YP modes changes with θp. VCSEL under the rotating polarization optical feedback can be a good candidate as a chaotic synchronization source for a secure communication system.

  19. Attractor hopping between polarization dynamical states in a vertical-cavity surface-emitting laser subject to parallel optical injection

    Science.gov (United States)

    Denis-le Coarer, Florian; Quirce, Ana; Valle, Angel; Pesquera, Luis; Rodríguez, Miguel A.; Panajotov, Krassimir; Sciamanna, Marc

    2018-03-01

    We present experimental and theoretical results of noise-induced attractor hopping between dynamical states found in a single transverse mode vertical-cavity surface-emitting laser (VCSEL) subject to parallel optical injection. These transitions involve dynamical states with different polarizations of the light emitted by the VCSEL. We report an experimental map identifying, in the injected power-frequency detuning plane, regions where attractor hopping between two, or even three, different states occur. The transition between these behaviors is characterized by using residence time distributions. We find multistability regions that are characterized by heavy-tailed residence time distributions. These distributions are characterized by a -1.83 ±0.17 power law. Between these regions we find coherence enhancement of noise-induced attractor hopping in which transitions between states occur regularly. Simulation results show that frequency detuning variations and spontaneous emission noise play a role in causing switching between attractors. We also find attractor hopping between chaotic states with different polarization properties. In this case, simulation results show that spontaneous emission noise inherent to the VCSEL is enough to induce this hopping.

  20. Single-mode temperature and polarisation-stable high-speed 850nm vertical cavity surface emitting lasers

    International Nuclear Information System (INIS)

    Nazaruk, D E; Blokhin, S A; Maleev, N A; Bobrov, M A; Pavlov, M M; Kulagina, M M; Vashanova, K A; Zadiranov, Yu M; Ustinov, V M; Kuzmenkov, A G; Vasil'ev, A P; Gladyshev, A G; Blokhin, A A; Salut, 7 Larina Str, N Novgorod, 603950 (Russian Federation))" data-affiliation=" (JSV Salut, 7 Larina Str, N Novgorod, 603950 (Russian Federation))" >Fefelov, A G

    2014-01-01

    A new intracavity-contacted design to realize temperature and polarization-stable high-speed single-mode 850 nm vertical cavity surface emitting lasers (VCSELs) grown by molecular-beam epitaxy is proposed. Temperature dependences of static and dynamic characteristics of the 4.5 pm oxide aperture InGaAlAs VCSEL were investigated in detail. Due to optimal gain-cavity detuning and enhanced carrier localization in the active region the threshold current remains below 0.75 mA for the temperature range within 20-90°C, while the output power exceeds 1 mW up to 90°C. Single-mode operation with side-mode suppression ratio higher than 30 dB and orthogonal polarization suppression ratio more than 18 dB was obtained in the whole current and temperature operation range. Device demonstrates serial resistance less than 250 Ohm, which is rather low for any type of single-mode short- wavelength VCSELs. VCSEL demonstrates temperature robust high-speed operation with modulation bandwidth higher than 13 GHz in the entire temperature range of 20-90°C. Despite high resonance frequency the high-speed performance of developed VCSELs was limited by the cut-off frequency of the parasitic low pass filter created by device resistances and capacitances. The proposed design is promising for single-mode high-speed VCSEL applications in a wide spectral range

  1. Comparison of nonpolar III-nitride vertical-cavity surface-emitting lasers with tunnel junction and ITO intracavity contacts

    KAUST Repository

    Leonard, J. T.

    2016-03-01

    We report on the lasing of III-nitride nonpolar, violet, vertical-cavity surface-emitting lasers (VCSELs) with III-nitride tunnel-junction (TJ) intracavity contacts and ion implanted apertures (IIAs). The TJ VCSELs are compared to similar VCSELs with tin-doped indium oxide (ITO) intracavity contacts. Prior to analyzing device results, we consider the relative advantages of III-nitride TJs for blue and green emitting VCSELs. The TJs are shown to be most advantageous for violet and UV VCSELs, operating near or above the absorption edge for ITO, as they significantly reduce the total internal loss in the cavity. However, for longer wavelength III-nitride VCSELs, TJs primarily offer the advantage of improved cavity design flexibility, allowing one to make the p-side thicker using a thick n-type III-nitride TJ intracavity contact. This offers improved lateral current spreading and lower loss, compare to using ITO and p-GaN, respectively. These aspects are particularly important for achieving high-power CW VCSELs, making TJs the ideal intracavity contact for any III-nitride VCSEL. A brief overview of III-nitride TJ growth methods is also given, highlighting the molecular-beam epitaxy (MBE) technique used here. Following this overview, we compare 12 mu m aperture diameter, violet emitting, TJ and ITO VCSEL experimental results, which demonstrate the significant improvement in differential efficiency and peak power resulting from the reduced loss in the TJ design. Specifically, the TJ VCSEL shows a peak power of similar to 550 mu W with a threshold current density of similar to 3.5 kA/cm(2), while the ITO VCSELs show peak powers of similar to 80 mu W and threshold current densities of similar to 7 kA/cm

  2. Nonpolar III-nitride vertical-cavity surface-emitting laser with a photoelectrochemically etched air-gap aperture

    Energy Technology Data Exchange (ETDEWEB)

    Leonard, J. T., E-mail: jtleona01@gmail.com; Yonkee, B. P.; Cohen, D. A.; Megalini, L.; Speck, J. S. [Materials Department, University of California, Santa Barbara, California 93106 (United States); Lee, S. [Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106 (United States); DenBaars, S. P.; Nakamura, S. [Materials Department, University of California, Santa Barbara, California 93106 (United States); Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106 (United States)

    2016-01-18

    We demonstrate a III-nitride nonpolar vertical-cavity surface-emitting laser (VCSEL) with a photoelectrochemically (PEC) etched aperture. The PEC lateral undercut etch is used to selectively remove the multi-quantum well (MQW) region outside the aperture area, defined by an opaque metal mask. This PEC aperture (PECA) creates an air-gap in the passive area of the device, allowing one to achieve efficient electrical confinement within the aperture, while simultaneously achieving a large index contrast between core of the device (the MQW within the aperture) and the lateral cladding of the device (the air-gap formed by the PEC etch), leading to strong lateral confinement. Scanning electron microscopy and focused ion-beam analysis is used to investigate the precision of the PEC etch technique in defining the aperture. The fabricated single mode PECA VCSEL shows a threshold current density of ∼22 kA/cm{sup 2} (25 mA), with a peak output power of ∼180 μW, at an emission wavelength of 417 nm. The near-field emission profile shows a clearly defined single linearly polarized (LP) mode profile (LP{sub 12,1}), which is in contrast to the filamentary lasing that is often observed in III-nitride VCSELs. 2D mode profile simulations, carried out using COMSOL, give insight into the different mode profiles that one would expect to be displayed in such a device. The experimentally observed single mode operation is proposed to be predominantly a result of poor current spreading in the device. This non-uniform current spreading results in a higher injected current at the periphery of the aperture, which favors LP modes with high intensities near the edge of the aperture.

  3. Comparison of nonpolar III-nitride vertical-cavity surface-emitting lasers with tunnel junction and ITO intracavity contacts

    KAUST Repository

    Leonard, J. T.; Young, E. C.; Yonkee, B. P.; Cohen, D. A.; Shen, Chao; Margalith, T.; Ng, Tien Khee; Denbaars, S. P.; Ooi, Boon S.; Speck, J. S.; Nakamura, S.

    2016-01-01

    We report on the lasing of III-nitride nonpolar, violet, vertical-cavity surface-emitting lasers (VCSELs) with III-nitride tunnel-junction (TJ) intracavity contacts and ion implanted apertures (IIAs). The TJ VCSELs are compared to similar VCSELs with tin-doped indium oxide (ITO) intracavity contacts. Prior to analyzing device results, we consider the relative advantages of III-nitride TJs for blue and green emitting VCSELs. The TJs are shown to be most advantageous for violet and UV VCSELs, operating near or above the absorption edge for ITO, as they significantly reduce the total internal loss in the cavity. However, for longer wavelength III-nitride VCSELs, TJs primarily offer the advantage of improved cavity design flexibility, allowing one to make the p-side thicker using a thick n-type III-nitride TJ intracavity contact. This offers improved lateral current spreading and lower loss, compare to using ITO and p-GaN, respectively. These aspects are particularly important for achieving high-power CW VCSELs, making TJs the ideal intracavity contact for any III-nitride VCSEL. A brief overview of III-nitride TJ growth methods is also given, highlighting the molecular-beam epitaxy (MBE) technique used here. Following this overview, we compare 12 mu m aperture diameter, violet emitting, TJ and ITO VCSEL experimental results, which demonstrate the significant improvement in differential efficiency and peak power resulting from the reduced loss in the TJ design. Specifically, the TJ VCSEL shows a peak power of similar to 550 mu W with a threshold current density of similar to 3.5 kA/cm(2), while the ITO VCSELs show peak powers of similar to 80 mu W and threshold current densities of similar to 7 kA/cm

  4. Amplification of an Autodyne Signal in a Bistable Vertical-Cavity Surface-Emitting Laser with the Use of a Vibrational Resonance

    Science.gov (United States)

    Chizhevsky, V. N.

    2018-01-01

    For the first time, it is demonstrated experimentally that a vibrational resonance in a polarization-bistable vertical-cavity surface-emitting laser can be used to increase the laser response in autodyne detection of microvibrations from reflecting surfaces. In this case, more than 25-fold signal amplification is achieved. The influence of the asymmetry of the bistable potential on the microvibration-detection efficiency is studied.

  5. Vertical Cavity Surface Emitting Laser for Operation at 1.5 µm with Integral AlGaInAs/InP Bragg mirrors

    OpenAIRE

    Linnik, M.; Christou, A.

    2001-01-01

    The design and performance of a low threshold selectively oxidized Vertical Cavity Surface Emitting Laser (VCSEL) fabricated for operation at a wavelength of 1.55 µm is based on III-V quaternary semiconductor alloys and is grown by Molecular Beam Epitaxy technique. The theoretical investigation of the optical properties of the compound semiconductor alloys allows one to select the optimum materials for highly reflective Bragg mirrors. The simulation of the designed VCSEL performance has been ...

  6. Growth of 1.5 micron gallium indium nitrogen arsenic antimonide vertical cavity surface emitting lasers by molecular beam epitaxy

    Science.gov (United States)

    Wistey, Mark Allan

    Fiber optics has revolutionized long distance communication and long haul networks, allowing unimaginable data speeds and noise-free telephone calls around the world for mere pennies per hour at the trunk level. But the high speeds of optical fiber generally do not extend to individual workstations or to the home, in large part because it has been difficult and expensive to produce lasers which emitted light at wavelengths which could take advantage of optical fiber. One of the most promising solutions to this problem is the development of a new class of semiconductors known as dilute nitrides. Dilute nitrides such as GaInNAs can be grown directly on gallium arsenide, which allows well-established processing techniques. More important, gallium arsenide allows the growth of vertical-cavity surface-emitting lasers (VCSELs), which can be grown in dense, 2D arrays on each wafer, providing tremendous economies of scale for manufacturing, testing, and packaging. Unfortunately, GaInNAs lasers have suffered from what has been dubbed the "nitrogen penalty," with high thresholds and low efficiency as the fraction of nitrogen in the semiconductor was increased. This thesis describes the steps taken to identify and essentially eliminate the nitrogen penalty. Protecting the wafer surface from plasma ignition, using an arsenic cap, greatly improved material quality. Using a Langmuir probe, we further found that the nitrogen plasma source produced a large number of ions which damaged the wafer during growth. The ions were dramatically reduced using deflection plates. Low voltage deflection plates were found to be preferable to high voltages, and simulations showed low voltages to be adequate for ion removal. The long wavelengths from dilute nitrides can be partly explained by wafer damage during growth. As a result of these studies, we demonstrated the first CW, room temperature lasers at wavelengths beyond 1.5mum on gallium arsenide, and the first GaInNAs(Sb) VCSELs beyond 1

  7. 1.3 μm wavelength vertical cavity surface emitting laser fabricated by orientation-mismatched wafer bonding: A prospect for polarization control

    Science.gov (United States)

    Okuno, Yae L.; Geske, Jon; Gan, Kian-Giap; Chiu, Yi-Jen; DenBaars, Steven P.; Bowers, John E.

    2003-04-01

    We propose and demonstrate a long-wavelength vertical cavity surface emitting laser (VCSEL) which consists of a (311)B InP-based active region and (100) GaAs-based distributed Bragg reflectors (DBRs), with an aim to control the in-plane polarization of output power. Crystal growth on (311)B InP substrates was performed under low-migration conditions to achieve good crystalline quality. The VCSEL was fabricated by wafer bonding, which enables us to combine different materials regardless of their lattice and orientation mismatch without degrading their quality. The VCSEL was polarized with a power extinction ratio of 31 dB.

  8. Characterization of 2.3 μm GaInAsSb-based vertical-cavity surface-emitting laser structures using photo-modulated reflectance

    Energy Technology Data Exchange (ETDEWEB)

    Chai, G. M. T. [Ibnu Sina Institute for Fundamental Science Studies, Universiti Teknologi Malaysia, Johor Bahru 81310 (Malaysia); Hosea, T. J. C., E-mail: j.hosea@surrey.ac.uk [Ibnu Sina Institute for Fundamental Science Studies, Universiti Teknologi Malaysia, Johor Bahru 81310 (Malaysia); Advanced Technology Institute and Department of Physics, University of Surrey, Guildford GU2 7XH (United Kingdom); Fox, N. E.; Hild, K.; Ikyo, A. B.; Marko, I. P.; Sweeney, S. J. [Advanced Technology Institute and Department of Physics, University of Surrey, Guildford GU2 7XH (United Kingdom); Bachmann, A.; Arafin, S.; Amann, M.-C. [Walter Schottky Institut, Technische Universität Munchen, Am Coulombwall 4, D-85748 Garching (Germany)

    2014-01-07

    We report angle dependent and temperature dependent (9 K–300 K) photo-modulated reflectance (PR) studies on vertical-cavity surface-emitting laser (VCSEL) structures, designed for 2.3 μm mid-infrared gas sensing applications. Changing the temperature allows us to tune the energies of the quantum well (QW) transitions relative to the VCSEL cavity mode (CM) energy. These studies show that this VCSEL structure has a QW-CM offset of 21 meV at room temperature. Consequently the QW ground-state transition comes into resonance with the CM at 220 ± 2 K. The results from these PR studies are closely compared with those obtained in a separate study of actual operating devices and show how the PR technique may be useful for device optimisation without the necessity of having first to process the wafers into working devices.

  9. Characterization of 2.3 μm GaInAsSb-based vertical-cavity surface-emitting laser structures using photo-modulated reflectance

    International Nuclear Information System (INIS)

    Chai, G. M. T.; Hosea, T. J. C.; Fox, N. E.; Hild, K.; Ikyo, A. B.; Marko, I. P.; Sweeney, S. J.; Bachmann, A.; Arafin, S.; Amann, M.-C.

    2014-01-01

    We report angle dependent and temperature dependent (9 K–300 K) photo-modulated reflectance (PR) studies on vertical-cavity surface-emitting laser (VCSEL) structures, designed for 2.3 μm mid-infrared gas sensing applications. Changing the temperature allows us to tune the energies of the quantum well (QW) transitions relative to the VCSEL cavity mode (CM) energy. These studies show that this VCSEL structure has a QW-CM offset of 21 meV at room temperature. Consequently the QW ground-state transition comes into resonance with the CM at 220 ± 2 K. The results from these PR studies are closely compared with those obtained in a separate study of actual operating devices and show how the PR technique may be useful for device optimisation without the necessity of having first to process the wafers into working devices

  10. Control of emitted light polarization in a 1310 nm dilute nitride spin-vertical cavity surface emitting laser subject to circularly polarized optical injection

    Energy Technology Data Exchange (ETDEWEB)

    Alharthi, S. S., E-mail: ssmalh@essex.ac.uk; Hurtado, A.; Al Seyab, R. K.; Henning, I. D.; Adams, M. J. [School of Computer Science and Electronic Engineering, University of Essex, Wivenhoe Park, Colchester CO4 3SQ (United Kingdom); Korpijarvi, V.-M.; Guina, M. [Optoelectronics Research Centre (ORC), Tampere University of Technology, P.O. Box 692, FIN-33101 Tampere (Finland)

    2014-11-03

    We experimentally demonstrate the control of the light polarization emitted by a 1310 nm dilute nitride spin-Vertical Cavity Surface Emitting Laser (VCSEL) at room temperature. This is achieved by means of a combination of polarized optical pumping and polarized optical injection. Without external injection, the polarization of the optical pump controls that of the spin-VCSEL. However, the addition of the externally injected signal polarized with either left- (LCP) or right-circular polarization (RCP) is able to control the polarization of the spin-VCSEL switching it at will to left- or right-circular polarization. A numerical model has been developed showing a very high degree of agreement with the experimental findings.

  11. Comparison of Mesa and Device Diameter Variation in Double Wafer-Fused Multi Quantum-Well, Long-Wavelength, Vertical Cavity Surface Emitting Lasers

    International Nuclear Information System (INIS)

    Menon, P.S.; Kandiah, K.; Burhanuddin Yeop Majlis; Shaari, S.

    2011-01-01

    Long-wavelength vertical-cavity surface-emitting lasers (LW-VCSELs) have profound advantages compared to traditional edge-emitting lasers offering improved properties with respect to mode selectivity, fibre coupling, threshold currents and integration into 2D arrays or with other electronic devices. Its commercialization is gaining momentum as the local and access network in optical communication system expand. Numerical modeling of LW-VCSEL utilizing wafer-fused InP-based multi-quantum wells (MQW) and GaAs-based distributed Bragg reflectors (DBRs) is presented in this paper. Emphasis is on the device and mesa/pillar diameter design parameter comparison and its effect on the device characteristics. (author)

  12. A UWOC system based on a 6 m/5.2 Gbps 680 nm vertical-cavity surface-emitting laser

    Science.gov (United States)

    Li, Chung-Yi; Tsai, Wen-Shing

    2018-02-01

    This study proves that an underwater wireless optical communication (UWOC) based on a 6 m/5.2 Gbps 68 nm vertical-cavity surface-emitting laser (VCSEL)-based system is superior to a 405 nm UWOC system. This UWOC application is the first to use a VCSEL at approximately 680 nm. The experiment also proved that a 680 nm VCSEL has the same transmission distance as that of an approximately 405 nm laser diode. The 680 nm VCSEL has a 5.2 Gbps high transmission rate and can transmit up to 6 m. Thus, the setup is the best alternative solution for high-speed UWOC applications.

  13. Development of a compact vertical-cavity surface-emitting laser end-pumped actively Q-switched laser for laser-induced breakdown spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Li, Shuo; Chen, Rongzhang; Nelsen, Bryan; Chen, Kevin, E-mail: pec9@pitt.edu [Department of Electrical and Computer Engineering, University of Pittsburgh, Pittsburgh, Pennsylvania 15260 (United States); Liu, Lei; Huang, Xi; Lu, Yongfeng [Department of Electrical and Computer Engineering, University of Nebraska-Lincoln, Lincoln, Nebraska 68588 (United States)

    2016-03-15

    This paper reports the development of a compact and portable actively Q-switched Nd:YAG laser and its applications in laser-induced breakdown spectroscopy (LIBS). The laser was end-pumped by a vertical-cavity surface-emitting laser (VCSEL). The cavity lases at a wavelength of 1064 nm and produced pulses of 16 ns with a maximum pulse energy of 12.9 mJ. The laser exhibits a reliable performance in terms of pulse-to-pulse stability and timing jitter. The LIBS experiments were carried out using this laser on NIST standard alloy samples. Shot-to-shot LIBS signal stability, crater profile, time evolution of emission spectra, plasma electron density and temperature, and limits of detection were studied and reported in this paper. The test results demonstrate that the VCSEL-pumped solid-state laser is an effective and compact laser tool for laser remote sensing applications.

  14. GaN-based vertical-cavity surface-emitting lasers with tunnel junction contacts grown by metal-organic chemical vapor deposition

    Science.gov (United States)

    Lee, SeungGeun; Forman, Charles A.; Lee, Changmin; Kearns, Jared; Young, Erin C.; Leonard, John T.; Cohen, Daniel A.; Speck, James S.; Nakamura, Shuji; DenBaars, Steven P.

    2018-06-01

    We report the first demonstration of III–nitride vertical-cavity surface-emitting lasers (VCSELs) with tunnel junction (TJ) intracavity contacts grown completely by metal–organic chemical vapor deposition (MOCVD). For the TJs, n++-GaN was grown on in-situ activated p++-GaN after buffered HF surface treatment. The electrical properties and epitaxial morphologies of the TJs were first investigated on TJ LED test samples. A VCSEL with a TJ intracavity contact showed a lasing wavelength of 408 nm, a threshold current of ∼15 mA (10 kA/cm2), a threshold voltage of 7.8 V, a maximum output power of 319 µW, and a differential efficiency of 0.28%.

  15. The vertical-cavity surface-emitting laser incorporating a high contrast grating mirror as a sensing device

    Science.gov (United States)

    Marciniak, Magdalena; Gebski, Marcin; Piskorski, Łukasz; Dems, Maciej; Wasiak, M.; Panajotov, Krassimir; Lott, James A.; Czyszanowski, Tomasz

    2018-02-01

    We propose a novel optical sensing system based on one device that both emits and detects light consisting of a verticalcavity surface-emitting laser (VCSEL) incorporating an high contrast grating (HCG) as a top mirror. Since HCGs can be very sensitive to the optical properties of surrounding media, they can be used to detect gases and liquid. The presence of a gas or a liquid around an HCG mirror causes changes of the power reflectance of the mirror, which corresponds to changes of the VCSEL's cavity quality factor and current-voltage characteristic. By observation of the current-voltage characteristic we can collect information about the medium around the HCG. In this paper we investigate how the properties of the HCG mirror depend on the refractive index of the HCG surroundings. We present results of a computer simulation performed with a three-dimensional fully vectorial model. We consider silicon HCGs on silica and designed for a 1300 nm VCSEL emission wavelength. We demonstrate that our approach can be applied to other wavelengths and material systems.

  16. Continuous wave vertical cavity surface emitting lasers at 2.5 μm with InP-based type-II quantum wells

    International Nuclear Information System (INIS)

    Sprengel, S.; Andrejew, A.; Federer, F.; Veerabathran, G. K.; Boehm, G.; Amann, M.-C.

    2015-01-01

    A concept for electrically pumped vertical cavity surface emitting lasers (VCSEL) for emission wavelength beyond 2 μm is presented. This concept integrates type-II quantum wells into InP-based VCSELs with a buried tunnel junction as current aperture. The W-shaped quantum wells are based on the type-II band alignment between GaInAs and GaAsSb. The structure includes an epitaxial GaInAs/InP and an amorphous AlF 3 /ZnS distributed Bragg reflector as bottom and top (outcoupling) mirror, respectively. Continuous-wave operation up to 10 °C at a wavelength of 2.49 μm and a peak output power of 400 μW at −18 °C has been achieved. Single-mode emission with a side-mode suppression ratio of 30 dB for mesa diameters up to 14 μm is presented. The long emission wavelength and current tunability over a wavelength range of more than 5 nm combined with its single-mode operation makes this device ideally suited for spectroscopy applications

  17. Complex-enhanced chaotic signals with time-delay signature suppression based on vertical-cavity surface-emitting lasers subject to chaotic optical injection

    Science.gov (United States)

    Chen, Jianjun; Duan, Yingni; Zhong, Zhuqiang

    2018-03-01

    A chaotic system is constructed on the basis of vertical-cavity surface-emitting lasers (VCSELs), where a slave VCSEL subject to chaotic optical injection (COI) from a master VCSEL with the external feedback. The complex degree (CD) and time-delay signature (TDS) of chaotic signals generated by this chaotic system are investigated numerically via permutation entropy (PE) and self-correlation function (SF) methods, respectively. The results show that, compared with master VCSEL subject to optical feedback, complex-enhanced chaotic signals with TDS suppression can be achieved for S-VCSEL subject to COI. Meanwhile, the influences of several controllable parameters on the evolution maps of CD of chaotic signals are carefully considered. It is shown that the CD of chaotic signals for S-VCSEL is always higher than that for M-VCSEL due to the CIO effect. The TDS of chaotic signals can be significantly suppressed by choosing the reasonable parameters in this system. Furthermore, TDS suppression and high CD chaos can be obtained simultaneously in the specific parameter ranges. The results confirm that this chaotic system may effectively improve the security of a chaos-based communication scheme.

  18. An efficient approach to characterizing and calculating carrier loss due to heating and barrier height variation in vertical-cavity surface-emitting lasers

    International Nuclear Information System (INIS)

    Jian, Wu; Summers, H. D.

    2010-01-01

    It is important to determine quantitatively the internal carrier loss arising from heating and barrier height variation in a vertical-cavity surface-emitting quantum well laser (VCSEL). However, it is generally difficult to realize this goal using purely theoretical formulas due to difficulty in deriving the parameters relating to the quantum well structure. In this paper, we describe an efficient approach to characterizing and calculating the carrier loss due to the heating and the barrier height change in the VCSEL. In the method, the thermal carrier loss mechanism is combined with gain measurement and calculation. The carrier loss is re-characterized in a calculable form by constructing the threshold current and gain detuning-related loss current using the measured gain data and then substituting them for the quantum well-related parameters in the formula. The result can be expressed as a product of an exponential weight factor linked to the barrier height change and the difference between the threshold current and gain detuning-related loss current. The gain variation at cavity frequency due to thermal carrier loss and gain detuning processes is measured by using an AlInGaAs–AlGaAs VCSEL structure. This work provides a useful approach to analysing threshold and loss properties of the VCSEL, particularly, gain offset design for high temperature operation of VCSELs. (classical areas of phenomenology)

  19. Compact electro-absorption modulator integrated with vertical-cavity surface-emitting laser for highly efficient millimeter-wave modulation

    International Nuclear Information System (INIS)

    Dalir, Hamed; Ahmed, Moustafa; Bakry, Ahmed; Koyama, Fumio

    2014-01-01

    We demonstrate a compact electro-absorption slow-light modulator laterally-integrated with an 850 nm vertical-cavity surface-emitting laser (VCSEL), which enables highly efficient millimeter-wave modulation. We found a strong leaky travelling wave in the lateral direction between the two cavities via widening the waveguide width with a taper shape. The small signal response of the fabricated device shows a large enhancement of over 55 dB in the modulation amplitude at frequencies beyond 35 GHz; thanks to the photon-photon resonance. A large group index of over 150 in a Bragg reflector waveguide enables the resonance at millimeter wave frequencies for 25 μm long compact modulator. Based on the modeling, we expect a resonant modulation at a higher frequency of 70 GHz. The resonant modulation in a compact slow-light modulator plays a significant key role for high efficient narrow-band modulation in the millimeter wave range far beyond the intrinsic modulation bandwidth of VCSELs.

  20. Demonstration of a III-nitride vertical-cavity surface-emitting laser with a III-nitride tunnel junction intracavity contact

    International Nuclear Information System (INIS)

    Leonard, J. T.; Young, E. C.; Yonkee, B. P.; Cohen, D. A.; Margalith, T.; Speck, J. S.; DenBaars, S. P.; Nakamura, S.

    2015-01-01

    We report on a III-nitride vertical-cavity surface-emitting laser (VCSEL) with a III-nitride tunnel junction (TJ) intracavity contact. The violet nonpolar VCSEL employing the TJ is compared to an equivalent VCSEL with a tin-doped indium oxide (ITO) intracavity contact. The TJ VCSEL shows a threshold current density (J th ) of ∼3.5 kA/cm 2 , compared to the ITO VCSEL J th of 8 kA/cm 2 . The differential efficiency of the TJ VCSEL is also observed to be significantly higher than that of the ITO VCSEL, reaching a peak power of ∼550 μW, compared to ∼80 μW for the ITO VCSEL. Both VCSELs display filamentary lasing in the current aperture, which we believe to be predominantly a result of local variations in contact resistance, which may induce local variations in refractive index and free carrier absorption. Beyond the analyses of the lasing characteristics, we discuss the molecular-beam epitaxy (MBE) regrowth of the TJ, as well as its unexpected performance based on band-diagram simulations. Furthermore, we investigate the intrinsic advantages of using a TJ intracavity contact in a VCSEL using a 1D mode profile analysis to approximate the threshold modal gain and general loss contributions in the TJ and ITO VCSEL

  1. Demonstration of a III-nitride vertical-cavity surface-emitting laser with a III-nitride tunnel junction intracavity contact

    Energy Technology Data Exchange (ETDEWEB)

    Leonard, J. T., E-mail: jtleona01@gmail.com; Young, E. C.; Yonkee, B. P.; Cohen, D. A.; Margalith, T.; Speck, J. S. [Materials Department, University of California, Santa Barbara, California 93106 (United States); DenBaars, S. P.; Nakamura, S. [Materials Department, University of California, Santa Barbara, California 93106 (United States); Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106 (United States)

    2015-08-31

    We report on a III-nitride vertical-cavity surface-emitting laser (VCSEL) with a III-nitride tunnel junction (TJ) intracavity contact. The violet nonpolar VCSEL employing the TJ is compared to an equivalent VCSEL with a tin-doped indium oxide (ITO) intracavity contact. The TJ VCSEL shows a threshold current density (J{sub th}) of ∼3.5 kA/cm{sup 2}, compared to the ITO VCSEL J{sub th} of 8 kA/cm{sup 2}. The differential efficiency of the TJ VCSEL is also observed to be significantly higher than that of the ITO VCSEL, reaching a peak power of ∼550 μW, compared to ∼80 μW for the ITO VCSEL. Both VCSELs display filamentary lasing in the current aperture, which we believe to be predominantly a result of local variations in contact resistance, which may induce local variations in refractive index and free carrier absorption. Beyond the analyses of the lasing characteristics, we discuss the molecular-beam epitaxy (MBE) regrowth of the TJ, as well as its unexpected performance based on band-diagram simulations. Furthermore, we investigate the intrinsic advantages of using a TJ intracavity contact in a VCSEL using a 1D mode profile analysis to approximate the threshold modal gain and general loss contributions in the TJ and ITO VCSEL.

  2. A Study of the interaction of radiation and semiconductor lasers: an analysis of transient and permanent effects induced on edge emitting and vertical cavity surface emitting laser diodes

    International Nuclear Information System (INIS)

    Pailharey, Eric

    2000-01-01

    The behavior of laser diodes under transient environment is presented in this work. The first section describes the basic phenomena of radiation interaction with matter. The radiative environments, the main characteristics of laser diodes and the research undertaken on the subject are presented and discussed. The tests on 1300 nm edge emitting laser diode are presented in the second section. The response to a transient ionizing excitation is explored using a 532 nm laser beam. The time of return to steady state after the perturbation is decomposed into several steps: decrease of the optical power during excitation, turn-on delay, relaxation oscillations and optical power offset. Their origins are analyzed using the device structure. To include all the phenomena in a numerical simulation of the device, an individual study of low conductivity materials used for the lateral confinement of the current density is undertaken. The effects of a single particle traversing the optical cavity and an analysis of permanent damages induced by neutrons are also determined. In the last section, 850 nm vertical cavity surface emitting laser diodes (VCSEL) are studied. The behavior of these devices which performances are in constant evolution, is investigated as a function of both temperature and polarization. Then VCSEL are submitted to transient ionizing irradiation and their responses are compared to those of edge emitting diodes. When proton implantation is used in the process, we observe the same behavior for both technologies. VCSEL were submitted to neutron fluence and we have studied the influence of the damages on threshold current, emission patterns and maximum of optical power. (author) [fr

  3. Swept-source optical coherence tomography powered by a 1.3-μm vertical cavity surface emitting laser enables 2.3-mm-deep brain imaging in mice in vivo

    Science.gov (United States)

    Choi, Woo June; Wang, Ruikang K.

    2015-10-01

    We report noninvasive, in vivo optical imaging deep within a mouse brain by swept-source optical coherence tomography (SS-OCT), enabled by a 1.3-μm vertical cavity surface emitting laser (VCSEL). VCSEL SS-OCT offers a constant signal sensitivity of 105 dB throughout an entire depth of 4.25 mm in air, ensuring an extended usable imaging depth range of more than 2 mm in turbid biological tissue. Using this approach, we show deep brain imaging in mice with an open-skull cranial window preparation, revealing intact mouse brain anatomy from the superficial cerebral cortex to the deep hippocampus. VCSEL SS-OCT would be applicable to small animal studies for the investigation of deep tissue compartments in living brains where diseases such as dementia and tumor can take their toll.

  4. Systematic characterization of a 1550 nm microelectromechanical (MEMS)-tunable vertical-cavity surface-emitting laser (VCSEL) with 7.92 THz tuning range for terahertz photomixing systems

    Science.gov (United States)

    Haidar, M. T.; Preu, S.; Cesar, J.; Paul, S.; Hajo, A. S.; Neumeyr, C.; Maune, H.; Küppers, F.

    2018-01-01

    Continuous-wave (CW) terahertz (THz) photomixing requires compact, widely tunable, mode-hop-free driving lasers. We present a single-mode microelectromechanical system (MEMS)-tunable vertical-cavity surface-emitting laser (VCSEL) featuring an electrothermal tuning range of 64 nm (7.92 THz) that exceeds the tuning range of commercially available distributed-feedback laser (DFB) diodes (˜4.8 nm) by a factor of about 13. We first review the underlying theory and perform a systematic characterization of the MEMS-VCSEL, with particular focus on the parameters relevant for THz photomixing. These parameters include mode-hop-free CW tuning with a side-mode-suppression-ratio >50 dB, a linewidth as narrow as 46.1 MHz, and wavelength and polarization stability. We conclude with a demonstration of a CW THz photomixing setup by subjecting the MEMS-VCSEL to optical beating with a DFB diode driving commercial photomixers. The achievable THz bandwidth is limited only by the employed photomixers. Once improved photomixers become available, electrothermally actuated MEMS-VCSELs should allow for a tuning range covering almost the whole THz domain with a single system.

  5. Enhancement of slope efficiency and output power in GaN-based vertical-cavity surface-emitting lasers with a SiO2-buried lateral index guide

    Science.gov (United States)

    Kuramoto, Masaru; Kobayashi, Seiichiro; Akagi, Takanobu; Tazawa, Komei; Tanaka, Kazufumi; Saito, Tatsuma; Takeuchi, Tetsuya

    2018-03-01

    We have achieved a high output power of 6 mW from a 441 nm GaN-based vertical-cavity surface-emitting laser (VCSEL) under continuous wave (CW) operation, by reducing both the internal loss and the reflectivity of the front cavity mirror. A preliminary analysis of the internal loss revealed an enormously high transverse radiation loss in a conventional GaN-based VCSEL without lateral optical confinement (LOC). Introducing an LOC structure enhanced the slope efficiency by a factor of 4.7, with a further improvement to a factor of 6.7 upon reducing the front mirror reflectivity. The result was a slope efficiency of 0.87 W/A and an external differential quantum efficiency of 32% under pulsed operation. A flip-chip-bonded VCSEL also exhibited a high slope efficiency of 0.64 W/A and an external differential quantum efficiency of 23% for the front-side output under CW operation. The reflectivity of the cavity mirror was adjusted by varying the number of AlInN/GaN distributed Bragg reflector pairs from 46 to 42, corresponding to reflectivity values from 99.8% to 99.5%. These results demonstrate that a combination of internal loss reduction and cavity mirror control is a very effective way of obtaining a high output GaN-based VCSEL.

  6. 850-nm Zn-diffusion vertical-cavity surface-emitting lasers with with oxide-relief structure for high-speed and energy-efficient optical interconnects from very-short to medium (2km) reaches

    Science.gov (United States)

    Shi, Jin-Wei; Wei, Chia-Chien; Chen, Jason (Jyehong); Yang, Ying-Jay

    2015-03-01

    High-speed and "green" ~850 nm vertical-cavity surface-emitting lasers (VCSELs) have lately attracted lots of attention due to their suitability for applications in optical interconnects (OIs). To further enhance the speed and its maximum allowable linking distance of VCSELs are two major trends to meet the requirement of OI in next generation data centers. Recently, by use of the advanced 850 nm VCSEL technique, data rate as high as 64 Gbit/sec over 57m and 20 Gbit/sec over 2km MMF transmission have been demonstrated, respectively. Here, we will review our recent work about 850 nm Zn-diffusion VCSELs with oxide-relief apertures to further enhance the above-mentioned performances. By using Zn-diffusion, we can not only reduce the device resistance but also manipulate the number of optical modes to benefit transmission. Combing such device, which has excellent single-mode (SMSR >30 dB) and high-power (~7mW) performance, with advanced modulation format (OFDM), record-high bit-rate-distance-product through MMF (2.3 km×28 Gbit/sec) has been demonstrated. Furthermore, by selective etching away the oxide aperture inside Zn-diffusion VCSEL, significant enhancement of device speed, D-factor, and reliability can be observed. With such unique VCSEL structure, >40 Gbit/sec energy-efficient transmission over 100m MMF under extremely low-driving current density (<10kA/cm2) has been successfully demonstrated.

  7. Single-mode 850-nm vertical-cavity surface-emitting lasers with Zn-diffusion and oxide-relief apertures for > 50 Gbit/sec OOK and 4-PAM transmission

    Science.gov (United States)

    Shi, Jin-Wei; Wei, Chia-Chien; Chen, Jyehong; Ledentsov, N. N.; Yang, Ying-Jay

    2017-02-01

    Vertical-cavity surface-emitting lasers (VCSELs) has become the most important light source in the booming market of short-reach (targeted at 56 Gbit/sec data rate per channel (CEI-56G) with the total data rate up to 400 Gbit/sec. However, the serious modal dispersion of multi-mode fiber (MMF), limited speed of VCSEL, and its high resistance (> 150 Ω) seriously limits the >50 Gbit/sec linking distance (50 Gbit/sec transmission due to that it can save one-half of the required bandwidth. Nevertheless, a 4.7 dB optical power penalty and the linearity of transmitter would become issues in the 4-PAM linking performance. Besides, in the modern OI system, the optics transreceiver module must be packaged as close as possible with the integrated circuits (ICs). The heat generated from ICs will become an issue in speed of VSCEL. Here, we review our recent work about 850 nm VCSEL, which has unique Zn-diffusion/oxide-relief apertures and special p- doping active layer with strong wavelength detuning to further enhance its modulation speed and high-temperature (85°C) performances. Single-mode (SM) devices with high-speed ( 26 GHz), reasonable resistance ( 70 Ω) and moderate output power ( 1.5 mW) can be achieved. Error-free 54 Gbit/sec OOK transmission through 1km MMF has been realized by using such SM device with signal processing techniques. Besides, the volterra nonlinear equalizer has been applied in our 4-PAM 64 Gbit/sec transmission through 2-km OM4 MMF, which significantly enhance the linearity of device and outperforms fed forward equalization (FFE) technique. Record high bit-rate distance product of 128.km is confirmed for optical-interconnect applications.

  8. Pb{sub 1–x}Eu{sub x}Te alloys (0 ⩽ x ⩽ 1) as materials for vertical-cavity surface-emitting lasers in the mid-infrared spectral range of 4–5 μm

    Energy Technology Data Exchange (ETDEWEB)

    Pashkeev, D. A., E-mail: d.pashkeev@gmail.com; Selivanov, Yu. G.; Chizhevskii, E. G.; Zasavitskiy, I. I. [Russian Academy of Sciences, Lebedev Physical Institute (Russian Federation)

    2016-02-15

    The optical properties of epitaxial layers and heterostructures based on Pb{sub 1–x}Eu{sub x}Te alloys (0 ⩽ x ⩽ 1) are analyzed in the context of designing Bragg mirrors and vertical-cavity surface-emitting lasers for the midinfrared spectral range. It is shown that the optimal heteropair for laser microcavities is Pb{sub 1–x}Eu{sub x}Te(x ≈ 0.06)/EuTe. On the basis of this heteropair, highly reflective Bragg mirrors consisting of just three periods and featuring a reflectance of R ⩾ 99.8% at the center of the stop band are grown by molecular-beam epitaxy on BaF{sub 2} (111) substrates. Single-mode optically pumped vertical-cavity surface-emitting lasers for the 4–5 μm spectral range operating at liquid-nitrogen temperatures are demonstrated.

  9. Highly strained InGaAs oxide confined VCSELs emitting in 1.25 μm

    International Nuclear Information System (INIS)

    Chang, S.J.; Yu, H.C.; Su, Y.K.; Chen, I.L.; Lee, T.D.; Lu, C.M.; Chiou, C.H.; Lee, Z.H.; Yang, H.P.; Sung, C.P.

    2005-01-01

    Highly strained GaAs-based all-epitaxial oxide confined vertical cavity surface emitting lasers (VCSELs) emitting in 1.25 μm were fabricated. Compared with the designed cavity resonance, it was found that lasing wavelength blue shifted by 29 nm when the driving current was small. The observation of such oxide mode is attributed to the effective optical thickness shrinkage of the oxide layer, and large detuning between the gain peak and cavity resonance

  10. 20 Gbit/s error free transmission with ~850 nm GaAs-based vertical cavity surface emitting lasers (VCSELs) containing InAs-GaAs submonolayer quantum dot insertions

    Science.gov (United States)

    Lott, J. A.; Shchukin, V. A.; Ledentsov, N. N.; Stinz, A.; Hopfer, F.; Mutig, A.; Fiol, G.; Bimberg, D.; Blokhin, S. A.; Karachinsky, L. Y.; Novikov, I. I.; Maximov, M. V.; Zakharov, N. D.; Werner, P.

    2009-02-01

    We report on the modeling, epitaxial growth, fabrication, and characterization of 830-845 nm vertical cavity surface emitting lasers (VCSELs) that employ InAs-GaAs quantum dot (QD) gain elements. The GaAs-based VCSELs are essentially conventional in design, grown by solid-source molecular beam epitaxy, and include top and bottom gradedheterointerface AlGaAs distributed Bragg reflectors, a single selectively-oxidized AlAs waveguiding/current funneling aperture layer, and a quasi-antiwaveguiding microcavity. The active region consists of three sheets of InAs-GaAs submonolayer insertions separated by AlGaAs matrix layers. Compared to QWs the InAs-GaAs insertions are expected to offer higher exciton-dominated modal gain and improved carrier capture and retention, thus resulting in superior temperature stability and resilience to degradation caused by operating at the larger switching currents commonly employed to increase the data rates of modern optical communication systems. We investigate the robustness and temperature performance of our QD VCSEL design by fabricating prototype devices in a high-frequency ground-sourceground contact pad configuration suitable for on-wafer probing. Arrays of VCSELs are produced with precise variations in top mesa diameter from 24 to 36 μm and oxide aperture diameter from 1 to 12 μm resulting in VCSELs that operate in full single-mode, single-mode to multi-mode, and full multi-mode regimes. The single-mode QD VCSELs have room temperature threshold currents below 0.5 mA and peak output powers near 1 mW, whereas the corresponding values for full multi-mode devices range from about 0.5 to 1.5 mA and 2.5 to 5 mW. At 20°C we observe optical transmission at 20 Gb/s through 150 m of OM3 fiber with a bit error ratio better than 10-12, thus demonstrating the great potential of our QD VCSELs for applications in next-generation short-distance optical data communications and interconnect systems.

  11. Hybrid vertical cavity laser

    DEFF Research Database (Denmark)

    Chung, Il-Sug; Mørk, Jesper

    2010-01-01

    A new hybrid vertical cavity laser structure for silicon photonics is suggested and numerically investigated. It incorporates a silicon subwavelength grating as a mirror and a lateral output coupler to a silicon ridge waveguide.......A new hybrid vertical cavity laser structure for silicon photonics is suggested and numerically investigated. It incorporates a silicon subwavelength grating as a mirror and a lateral output coupler to a silicon ridge waveguide....

  12. Electrically Pumped Vertical-Cavity Amplifiers

    DEFF Research Database (Denmark)

    Greibe, Tine

    2007-01-01

    In this work, the design of electrically pumped vertical cavity semiconductor optical amplifiers (eVCAs) for use in a mode-locked external-cavity laser has been developed, investigated and analysed. Four different eVCAs, one top-emitting and three bottom emitting structures, have been designed...... and discussed. The thesis concludes with recommendations for further work towards the realisation of compact electrically pumped mode-locked vertical externalcavity surface emitting lasers....

  13. Vertical cavity laser

    DEFF Research Database (Denmark)

    2016-01-01

    The present invention provides a vertical cavity laser comprising a grating layer comprising an in-plane grating, the grating layer having a first side and having a second side opposite the first side and comprising a contiguous core grating region having a grating structure, wherein an index...

  14. Dilute nitride vertical-cavity surface-emitting lasers

    International Nuclear Information System (INIS)

    Jouhti, T; Okhotnikov, O; Konttinen, J; Gomes, L A; Peng, C S; Karirinne, S; Pavelescu, E-M; Pessa, M

    2003-01-01

    A novel quaternary compound semiconductor material, Ga 1-x In x N y As 1-y (0 0.65 In 0.35 N 0.014 As 0.986 /GaAs quantum wells with special strain-mediating layers. The laser characterization was carried out by using a fibre pigtailed 980 nm pump laser diode, 980/1300 nm wavelength division multiplexer and an optical spectrum analyser. A high optical output power of 3.5 mW was coupled lenslessly into a standard single-mode fibre

  15. Hybrid vertical-cavity laser with lateral emission into a silicon waveguide

    DEFF Research Database (Denmark)

    Park, Gyeong Cheol; Xue, Weiqi; Taghizadeh, Alireza

    2015-01-01

    into the waveguide integrated with the laser. This laser has the advantages of long-wavelength vertical-cavity surface-emitting lasers, such as low threshold and high side-mode suppression ratio, while allowing integration with silicon photonic circuits, and is fabricated using CMOS compatible processes. It has......We experimentally demonstrate an optically-pumped III-V/Si vertical-cavity laser with lateral emission into a silicon waveguide. This on-chip hybrid laser comprises a distributed Bragg reflector, a III-V active layer, and a high-contrast grating reflector, which simultaneously funnels light...

  16. Near-infrared wafer-fused vertical-cavity surface-emitting lasers for HF detection

    Czech Academy of Sciences Publication Activity Database

    Civiš, Svatopluk; Zelinger, Zdeněk; Nevrlý, V.; Dorogan, A.; Ferus, Martin; Iakovlev, V.; Sirbu, A.; Mereuta, A.; Caliman, A.; Suruceanu, G.; Kapon, E.

    2014-01-01

    Roč. 147, NOV 2014 (2014), s. 53-59 ISSN 0022-4073 R&D Projects: GA MŠk(CZ) LD14022 Grant - others:Ministerstvo financí, Centrum zahraniční pomoci(CZ) PF049 Institutional support: RVO:61388955 ; RVO:68081707 Keywords : High resolution absorption spectroscopy * Monitoring of hydrogen fluoride, methane, and ammonia * Tunable diode laser spectroscopy (TDLS) Subject RIV: CF - Physical ; Theoretical Chemistry Impact factor: 2.645, year: 2014

  17. Vertical-Cavity Surface-Emitting Lasers: Advanced Modulation Formats and Coherent Detection

    DEFF Research Database (Denmark)

    Rodes Lopez, Roberto

    transmission link with real-time demodulation. Furthermore, advanced modulation formats are considered in this thesis to expand the state-of-the-art in high-speed short-range data transmission system based on VCSELs. First, directly modulation of a VCSEL with a 4-level pulse amplitude modulation (PAM-4) signal...... at 50 Gb/s is achieved. This is the highest data rate ever transmitted with a single VCSEL at the time of this thesis work. The capacity of this system is increased to 100 Gb/s by using polarization multiplexing emulation and forward error correction techniques. Compared to a non return-to-zero on-off...

  18. Theory and Modeling of Lasing Modes in Vertical Cavity Surface Emitting Lasers

    Directory of Open Access Journals (Sweden)

    Benjamin Klein

    1998-01-01

    modes that the VCSEL can support are then determined by matching the gain necessary for the optical system in both magnitude and phase to the gain available from the laser's electronic system. Examples are provided.

  19. Integration of electro-absorption modulator in a vertical-cavity surface-emitting laser

    Science.gov (United States)

    Marigo-Lombart, L.; Calvez, S.; Arnoult, A.; Rumeau, A.; Viallon, C.; Thienpont, H.; Panajotov, K.; Almuneau, G.

    2018-02-01

    VCSELs became dominant laser sources in many short optical link applications such as datacenter, active cables, etc. Actual standards and commercialized VCSEL are providing 25 Gb/s data rates, but new solutions are expected to settle the next device generation enabling 100 Gb/s. Directly modulated VCSEL have been extensively studied and improved to reach bandwidths in the range of 26-32 GHz [Chalmers, TU Berlin], however at the price of increased applied current and thus reduced device lifetime. Furthermore, the relaxation oscillation limit still subsists with this solution. Thus, splitting the emission and the modulation functions as done with DFB lasers is a very promising alternative [TI-Tech, TU Berlin]. Here, we study the vertical integration of an ElectroAbsorption Modulator (EAM) within a VCSEL, where the output light of the VCSEL is modulated through the EAM section. In our original design, we finely optimized the EAM design to maximize the modulation depth by implementing perturbative Quantum Confined Stark Effect (QCSE) calculations, while designing the vertical integration of the EAM without penalty on the VCSEL static performances. We will present the different fabricated vertical structures, as well as the experimental electrical and optical static measurements for those configurations demonstrating a very good agreement with the reflectivity and absorption simulations obtained for both the VCSEL and the EAM-VCSEL structures. Finally, to reach very high frequency modulation we studied the BCB electrical properties up to 110 GHz and investigated coplanar and microstrip lines access to decrease both the parasitic capacitance and the influence of the substrate.

  20. Design and Fabrication of 850 and 980 nm Vertical Cavity Surface Emitting Laser

    National Research Council Canada - National Science Library

    Das, N

    2004-01-01

    .... VCSELs on GaAs substrates were grown by the molecular beam epitaxy technique. In this report we present detailed procedures to design and fabricate 850-nm top-emitting and 980-nm bottom-emitting VCSELs...

  1. Transverse mode control in proton-implanted and oxide-confined VCSELs via patterned dielectric anti-phase filters

    Science.gov (United States)

    Kesler, Benjamin; O'Brien, Thomas; Dallesasse, John M.

    2017-02-01

    A novel method for controlling the transverse lasing modes in both proton implanted and oxide-confined vertical- cavity surface-emitting lasers (VCSELs) with a multi-layer, patterned, dielectric anti-phase (DAP) filter is pre- sented. Using a simple photolithographic liftoff process, dielectric layers are deposited and patterned on individual VCSELs to modify (increase or decrease) the mirror reflectivity across the emission aperture via anti-phase reflections, creating spatially-dependent threshold material gain. The shape of the dielectric pattern can be tailored to overlap with specific transverse VCSEL modes or subsets of transverse modes to either facilitate or inhibit lasing by decreasing or increasing, respectively, the threshold modal gain. A silicon dioxide (SiO2) and titanium dioxide (TiO2) anti-phase filter is used to achieve a single-fundamental-mode, continuous-wave output power greater than 4.0 mW in an oxide-confined VCSEL at a lasing wavelength of 850 nm. A filter consisting of SiO2 and TiO2 is used to facilitate injection-current-insensitive fundamental mode and lower order mode lasing in proton implanted VCSELs at a lasing wavelength of 850 nm. Higher refractive index dielectric materials such as amorphous silicon (a-Si) can be used to increase the effectiveness of the anti-phase filter on proton implanted devices by reducing the threshold modal gain of any spatially overlapping modes. This additive, non-destructive method allows for mode selection at any lasing wavelength and for any VCSEL layer structure without the need for semiconductor etching or epitaxial regrowth. It also offers the capability of designing a filter based upon available optical coating materials.

  2. Submonolayer Quantum Dots for High Speed Surface Emitting Lasers

    Directory of Open Access Journals (Sweden)

    Zakharov ND

    2007-01-01

    Full Text Available AbstractWe report on progress in growth and applications of submonolayer (SML quantum dots (QDs in high-speed vertical-cavity surface-emitting lasers (VCSELs. SML deposition enables controlled formation of high density QD arrays with good size and shape uniformity. Further increase in excitonic absorption and gain is possible with vertical stacking of SML QDs using ultrathin spacer layers. Vertically correlated, tilted or anticorrelated arrangements of the SML islands are realized and allow QD strain and wavefunction engineering. Respectively, both TE and TM polarizations of the luminescence can be achieved in the edge-emission using the same constituting materials. SML QDs provide ultrahigh modal gain, reduced temperature depletion and gain saturation effects when used in active media in laser diodes. Temperature robustness up to 100 °C for 0.98 μm range vertical-cavity surface-emitting lasers (VCSELs is realized in the continuous wave regime. An open eye 20 Gb/s operation with bit error rates better than 10−12has been achieved in a temperature range 25–85 °Cwithout current adjustment. Relaxation oscillations up to ∼30 GHz have been realized indicating feasibility of 40 Gb/s signal transmission.

  3. Ring cavity surface emitting semiconductor lasers

    International Nuclear Information System (INIS)

    Mujagic, E.

    2010-01-01

    Quantum cascade lasers (QCLs) are electrically driven semiconductor lasers, which have undergone a steady improvement since the first demonstration in 1994. These are now well established as reliable sources of coherent light in the mid-infrared (MIR) and terahertz (THz)range of the electromagnetic spectrum (3-300 μm). The rapid progress of this type of lasers is based on a high degree of freedom in tailoring the emission wavelength within a large variety of semiconductor heterostructure designs and materials. These properties have attracted the attention of various applications such as gas analysis, chemical sensing, spectral imaging and free-space telecommunication. In order to improve the selectivity, sensitivity and efficiency of today's sensor systems, high optical power, continuous wave and room temperature performance, single-mode operation and low divergence optical beams, are highly desirable qualities of a compact laser source in this field of research. Since all of these features cannot be provided by a conventional edge-emitting device at the same time, research has put focus on the development of surface emitting devices. Nowadays, the vertical cavity surface emitting lasers (VCSELs) are the most prominent representative for this type of light emitters. With its capability of producing narrow circular beams, the feasibility of two-dimensional arrays and on-wafer testing, such a coherent light source results in a reduction of the fabrication effort and production costs. Since the radiation in QCLs is strictly polarized normal to the epitaxial layer plane, fabrication of VCSELs based on QC structures is not viable. The subject of this work is the design and realization of 'ring cavity surface emitting lasers' (ring-CSELs). This type of lasers employs a circular ring cavity and a resonant distributed feedback (DFB) surface grating. Ring-CSELs were fabricated on the basis of MIR and THz QC structures, which cover a wavelength range from 4 μm to 93

  4. GaN-based vertical-cavity laser performance improvements using tunnel-junction-cascaded active regions

    International Nuclear Information System (INIS)

    Piprek, Joachim

    2014-01-01

    This Letter investigates the output power enhancement achieved by tunnel junction insertion into the InGaN multi-quantum well (MQW) active region of a 410 nm vertical-cavity surface-emitting laser which enables the repeated use of carriers for light generation (carrier recycling). While the number of quantum wells remains unchanged, the tunnel junction eliminates absorption caused by the non-uniform MQW carrier distribution. The thermal resistance drops and the excess bias lead to a surprisingly small rise in self-heating.

  5. Long-term vacuum tests of single-mode vertical cavity surface emitting laser diodes used for a scalar magnetometer

    Science.gov (United States)

    Hagen, C.; Ellmeier, M.; Piris, J.; Lammegger, R.; Jernej, I.; Magnes, W.; Murphy, E.; Pollinger, A.; Erd, C.; Baumjohann, W.

    2017-11-01

    Scalar magnetometers measure the magnitude of the magnetic field, while vector magnetometers (mostly fluxgate magnetometers) produce three-component outputs proportional to the magnitude and the direction of the magnetic field. While scalar magnetometers have a high accuracy, vector magnetometers suffer from parameter drifts and need to be calibrated during flight. In some cases, full science return can only be achieved by a combination of vector and scalar magnetometers.

  6. Vertical-Cavity In-plane Heterostructures: Physics and Applications

    DEFF Research Database (Denmark)

    Taghizadeh, Alireza; Mørk, Jesper; Chung, Il-Sug

    2015-01-01

    We show that the in-plane heterostructures realized in vertical cavities with high contrast grating(HCG) reflector enables exotic configurations of heterostructure and photonic wells. In photonic crystal heterostructures forming a photonic well, the property of a confined mode is determined...... by the well width and barrier height. We show that in vertical-cavity in-plane heterostructures, anisotropic dispersion curvatures plays a key role as well, leading to exotic effects such as a photonic well with conduction band like well and a valence band like barrier. We investigate three examples...

  7. Vertical-cavity laser with a novel grating mirror

    DEFF Research Database (Denmark)

    Park, Gyeong Cheol

    Hybrid III-V on silicon (Si) ‘vertical cavity lasers’ (hybrid VCLs), which can emit light laterally into a Si waveguide, are fabricated and investigated. The Si-integrated hybrid VCL consists of a top dielectric Bragg reflector (DBR), a III-V active layer, and a bottom high contrast grating (HCG...... the vertical cavity laterally into the Si waveguide. The measured inplane emission proves the lasing action with a side-mode suppression ratio (SMSR) of 27.5 dB at a peak wavelength of 1486 nm. The threshold pumping power corresponds to a current injection of 1.1 mA. A signature of highly anisotropic cavity...... dispersion has been observed and discussed, which is unique for HCG-based vertical cavities. The second version proves the potential for high-speed operation of hybrid VCL structure. In the hybrid VCL structure, the effective cavity length is substantially reduced by using a dielectric DBR and a TM...

  8. Exploiting broad-area surface emitting lasers to manifest the path-length distributions of finite-potential quantum billiards.

    Science.gov (United States)

    Yu, Y T; Tuan, P H; Chang, K C; Hsieh, Y H; Huang, K F; Chen, Y F

    2016-01-11

    Broad-area vertical-cavity surface-emitting lasers (VCSELs) with different cavity sizes are experimentally exploited to manifest the influence of the finite confinement strength on the path-length distribution of quantum billiards. The subthreshold emission spectra of VCSELs are measured to obtain the path-length distributions by using the Fourier transform. It is verified that the number of the resonant peaks in the path-length distribution decreases with decreasing the confinement strength. Theoretical analyses for finite-potential quantum billiards are numerically performed to confirm that the mesoscopic phenomena of quantum billiards with finite confinement strength can be analogously revealed by using broad-area VCSELs.

  9. Cryogenic infrastructure for Fermilab's ILC vertical cavity test facility

    International Nuclear Information System (INIS)

    Carcagno, R.; Ginsburg, C.; Huang, Y.; Norris, B.; Ozelis, J.; Peterson, T.; Poloubotko, V.; Rabehl, R.; Sylvester, C.; Wong, M.; Fermilab

    2006-01-01

    Fermilab is building a Vertical Cavity Test Facility (VCTF) to provide for R and D and pre-production testing of bare 9-cell, 1.3-GHz superconducting RF (SRF) cavities for the International Linear Collider (ILC) program. This facility is located in the existing Industrial Building 1 (IB1) where the Magnet Test Facility (MTF) also resides. Helium and nitrogen cryogenics are shared between the VCTF and MTF including the existing 1500-W at 4.5-K helium refrigerator with vacuum pumping for super-fluid operation (125-W capacity at 2-K). The VCTF is being constructed in multiple phases. The first phase is scheduled for completion in mid 2007, and includes modifications to the IB1 cryogenic infrastructure to allow helium cooling to be directed to either the VCTF or MTF as scheduling demands require. At this stage, the VCTF consists of one Vertical Test Stand (VTS) cryostat for the testing of one cavity in a 2-K helium bath. Planning is underway to provide a total of three Vertical Test Stands at VCTF, each capable of accommodating two cavities. Cryogenic infrastructure improvements necessary to support these additional VCTF test stands include a dedicated ambient temperature vacuum pump, a new helium purification skid, and the addition of helium gas storage. This paper describes the system design and initial cryogenic operation results for the first VCTF phase, and outlines future cryogenic infrastructure upgrade plans for expanding to three Vertical Test Stands

  10. CRYOGENIC INFRASTRUCTURE FOR FERMILAB'S ILC VERTICAL CAVITY TEST FACILITY

    International Nuclear Information System (INIS)

    Carcagno, R.; Ginsburg, C.; Huang, Y.; Norris, B.; Ozelis, J.; Peterson, T.; Poloubotko, V.; Rabehl, R.; Sylvester, C.; Wong, M.

    2008-01-01

    Fermilab is building a Vertical Cavity Test Facility (VCTF) to provide for R and D and pre-production testing of bare 9-cell, 1.3-GHz superconducting RF (SRF) cavities for the International Linear Collider (ILC) program. This facility is located in the existing Industrial Building 1 (IB1) where the Magnet Test Facility (MTF) also resides. Helium and nitrogen cryogenics are shared between the VCTF and MTF including the existing 1500-W at 4.5-K helium refrigerator with vacuum pumping for super-fluid operation (125-W capacity at 2-K). The VCTF is being constructed in multiple phases. The first phase is scheduled for completion in mid 2007, and includes modifications to the IB1 cryogenic infrastructure to allow helium cooling to be directed to either the VCTF or MTF as scheduling demands require. At this stage, the VCTF consists of one Vertical Test Stand (VTS) cryostat for the testing of one cavity in a 2-K helium bath. Planning is underway to provide a total of three Vertical Test Stands at VCTF, each capable of accommodating two cavities. Cryogenic infrastructure improvements necessary to support these additional VCTF test stands include a dedicated ambient temperature vacuum pump, a new helium purification skid, and the addition of helium gas storage. This paper describes the system design and initial cryogenic operation results for the first VCTF phase, and outlines future cryogenic infrastructure upgrade plans for expanding to three Vertical Test Stands

  11. Hybrid III-V-on-Si Vertical Cavity laser for Optical Interconnects

    DEFF Research Database (Denmark)

    Park, Gyeong Cheol; Semenova, Elizaveta; Chung, Il-Sug

    2013-01-01

    Combining a III-V active material onto the Si platform is an attractive approach for silicon photonics light source. We have developed fabrication methods for novel III-V on Si vertical cavity lasers.......Combining a III-V active material onto the Si platform is an attractive approach for silicon photonics light source. We have developed fabrication methods for novel III-V on Si vertical cavity lasers....

  12. Short-wavelength infrared imaging using low dark current InGaAs detector arrays and vertical-cavity surface-emitting laser illuminators

    Science.gov (United States)

    Macdougal, Michael; Geske, Jon; Wang, Chad; Follman, David

    2011-06-01

    We describe the factors that go into the component choices for a short wavelength IR (SWIR) imager, which include the SWIR sensor, the lens, and the illuminator. We have shown the factors for reducing dark current, and shown that we can achieve well below 1.5 nA/cm2 for 15 μm devices at 7 °C. In addition, we have mated our InGaAs detector arrays to 640×512 readout integrated integrated circuits to make focal plane arrays (FPAs). The resulting FPAs are capable of imaging photon fluxes with wavelengths between 1 and 1.6 μm at low light levels. The dark current associated with these FPAs is extremely low, exhibiting a mean dark current density of 0.26 nA/cm2 at 0 °C. Noise due to the readout can be reduced from 95 to 57 electrons by using off-chip correlated double sampling. In addition, Aerius has developed laser arrays that provide flat illumination in scenes that are normally light-starved. The illuminators have 40% wall-plug efficiency and provide low-speckle illumination, and provide artifact-free imagery versus conventional laser illuminators.

  13. Numerical Investigation of Vertical Cavity Lasers With High-Contrast Gratings Using the Fourier Modal Method

    DEFF Research Database (Denmark)

    Taghizadeh, Alireza; Mørk, Jesper; Chung, Il-Sug

    2016-01-01

    We explore the use of a modal expansion technique, Fourier modal method (FMM), for investigating the optical properties of vertical cavities employing high-contrast gratings (HCGs). Three techniques for determining the resonance frequency and quality factor (Q-factor) of a cavity mode are compared......, the scattering losses of several HCG-based vertical cavities with inplane heterostructures which have promising prospects for fundamental physics studies and on-chip laser applications, are investigated. This type of parametric study of 3D structures would be numerically very demanding using spatial...

  14. Oxide-confined 2D VCSEL arrays for high-density inter/intra-chip interconnects

    Science.gov (United States)

    King, Roger; Michalzik, Rainer; Jung, Christian; Grabherr, Martin; Eberhard, Franz; Jaeger, Roland; Schnitzer, Peter; Ebeling, Karl J.

    1998-04-01

    We have designed and fabricated 4 X 8 vertical-cavity surface-emitting laser (VCSEL) arrays intended to be used as transmitters in short-distance parallel optical interconnects. In order to meet the requirements of 2D, high-speed optical links, each of the 32 laser diodes is supplied with two individual top contacts. The metallization scheme allows flip-chip mounting of the array modules junction-side down on silicon complementary metal oxide semiconductor (CMOS) chips. The optical and electrical characteristics across the arrays with device pitch of 250 micrometers are quite homogeneous. Arrays with 3 micrometers , 6 micrometers and 10 micrometers active diameter lasers have been investigated. The small devices show threshold currents of 600 (mu) A, single-mode output powers as high as 3 mW and maximum wavelength deviations of only 3 nm. The driving characteristics of all arrays are fully compatible to advanced 3.3 V CMOS technology. Using these arrays, we have measured small-signal modulation bandwidths exceeding 10 GHz and transmitted pseudo random data at 8 Gbit/s channel over 500 m graded index multimode fiber. This corresponds to a data transmission rate of 256 Gbit/s per array of 1 X 2 mm2 footprint area.

  15. Continuous-wave optically pumped green perovskite vertical-cavity surface-emitter

    KAUST Repository

    Alias, Mohd Sharizal; Liu, Zhixiong; Alatawi, Abdullah; Ng, Tien Khee; Wu, Tao; Ooi, Boon S.

    2017-01-01

    We report an optically pumped green perovskite vertical-cavity surface-emitter operating in continuous-wave (CW) with a power density threshold of ~89 kW/cm2. The device has an active region of CH3NH3PbBr3 embedded in a dielectric microcavity

  16. Theoretical Investigation of Subwavelength Gratings and Vertical Cavity Lasers Employing Grating Structures

    DEFF Research Database (Denmark)

    Taghizadeh, Alireza

    This thesis deals with theoretical investigations of a newly proposed grating structure, referred to as hybrid grating (HG) as well as vertical cavity lasers based on the grating reflectors. The HG consists of a near-subwavelength grating layer and an unpatterned high-refractive-index cap layer...... directions, which is analogous to electronic quantum wells in conduction or valence bands. Several interesting configurations of heterostructures have been investigated and their potential in fundamental physics study and applications are discussed. For numerical and theoretical studies, a three...... feasibility than the HCG-based ones. Furthermore, the concept of cavity dispersion in vertical cavities is introduced and its importance in the modal properties is numerically investigated. The dispersion curvature of a cavity mode is interpreted as the effective photon mass of the cavity mode. In a vertical...

  17. Efficient quality-eactor estimation of a vertical cavity employing a high-contrast grating

    DEFF Research Database (Denmark)

    Taghizadeh, Alireza; Mørk, Jesper; Chung, Il-Sug

    2017-01-01

    Hybrid vertical cavity lasers employing high-contrast grating reflectors are attractive for Si-integrated light source applications. Here, a method for reducing a three-dimensional (3D) optical simulation of this laser structure to lower-dimensional simulations is suggested, which allows for very...... fast and approximate analysis of the quality-factor of the 3D cavity. This approach enables us to efficiently optimize the laser cavity design without performing cumbersome 3D simulations....

  18. Bistable laser device with multiple coupled active vertical-cavity resonators

    Science.gov (United States)

    Fischer, Arthur J.; Choquette, Kent D.; Chow, Weng W.

    2003-08-19

    A new class of bistable coupled-resonator vertical-cavity semiconductor laser devices has been developed. These bistable laser devices can be switched, either electrically or optically, between lasing and non-lasing states. A switching signal with a power of a fraction of a milliwatt can change the laser output of such a device by a factor of a hundred, thereby enabling a range of optical switching and data encoding applications.

  19. Surface emitting ring quantum cascade lasers for chemical sensing

    Science.gov (United States)

    Szedlak, Rolf; Hayden, Jakob; Martín-Mateos, Pedro; Holzbauer, Martin; Harrer, Andreas; Schwarz, Benedikt; Hinkov, Borislav; MacFarland, Donald; Zederbauer, Tobias; Detz, Hermann; Andrews, Aaron Maxwell; Schrenk, Werner; Acedo, Pablo; Lendl, Bernhard; Strasser, Gottfried

    2018-01-01

    We review recent advances in chemical sensing applications based on surface emitting ring quantum cascade lasers (QCLs). Such lasers can be implemented in monolithically integrated on-chip laser/detector devices forming compact gas sensors, which are based on direct absorption spectroscopy according to the Beer-Lambert law. Furthermore, we present experimental results on radio frequency modulation up to 150 MHz of surface emitting ring QCLs. This technique provides detailed insight into the modulation characteristics of such lasers. The gained knowledge facilitates the utilization of ring QCLs in combination with spectroscopic techniques, such as heterodyne phase-sensitive dispersion spectroscopy for gas detection and analysis.

  20. Bistable output from a coupled-resonator vertical-cavity laser diode

    International Nuclear Information System (INIS)

    Fischer, A. J.; Choquette, K. D.; Chow, W. W.; Allerman, A. A.; Geib, K.

    2000-01-01

    We report a monolithic coupled-resonator vertical-cavity laser with an ion-implanted top cavity and a selectively oxidized bottom cavity which exhibits bistable behavior in the light output versus injection current. Large bistability regions over current ranges as wide as 18 mA have been observed with on/off contrast ratios of greater than 20 dB. The position and width of the bistability region can be varied by changing the bias to the top cavity. Switching between on and off states can be accomplished with changes as small as 250 μW to the electrical power applied to the top cavity. The bistable behavior is the response of the nonlinear susceptibility in the top cavity to the changes in the bottom intracavity laser intensity as the bottom cavity reaches the thermal rollover point

  1. Continuous-wave optically pumped green perovskite vertical-cavity surface-emitter

    KAUST Repository

    Alias, Mohd Sharizal

    2017-09-11

    We report an optically pumped green perovskite vertical-cavity surface-emitter operating in continuous-wave (CW) with a power density threshold of ~89 kW/cm2. The device has an active region of CH3NH3PbBr3 embedded in a dielectric microcavity; this feat was achieved with a combination of optimal spectral alignment of the optical cavity modes with the perovskite optical gain, an adequate Q-factor of the microcavity, adequate thermal stability, and improved material quality with a smooth, passivated, and annealed thin active layer. Our results signify a way towards efficient CW perovskite emitter operation and electrical injection using low-cost fabrication methods for addressing monolithic optoelectronic integration and lasing in the green gap.

  2. Cryogenic infrastructure for Fermilab's ILC vertical cavity test facility

    Energy Technology Data Exchange (ETDEWEB)

    Carcagno, R.; Ginsburg, C.; Huang, Y.; Norris, B.; Ozelis, J.; Peterson, T.; Poloubotko, V.; Rabehl, R.; Sylvester, C.; Wong, M.; /Fermilab

    2006-06-01

    Fermilab is building a Vertical Cavity Test Facility (VCTF) to provide for R&D and pre-production testing of bare 9-cell, 1.3-GHz superconducting RF (SRF) cavities for the International Linear Collider (ILC) program. This facility is located in the existing Industrial Building 1 (IB1) where the Magnet Test Facility (MTF) also resides. Helium and nitrogen cryogenics are shared between the VCTF and MTF including the existing 1500-W at 4.5-K helium refrigerator with vacuum pumping for super-fluid operation (125-W capacity at 2-K). The VCTF is being constructed in multiple phases. The first phase is scheduled for completion in mid 2007, and includes modifications to the IB1 cryogenic infrastructure to allow helium cooling to be directed to either the VCTF or MTF as scheduling demands require. At this stage, the VCTF consists of one Vertical Test Stand (VTS) cryostat for the testing of one cavity in a 2-K helium bath. Planning is underway to provide a total of three Vertical Test Stands at VCTF, each capable of accommodating two cavities. Cryogenic infrastructure improvements necessary to support these additional VCTF test stands include a dedicated ambient temperature vacuum pump, a new helium purification skid, and the addition of helium gas storage. This paper describes the system design and initial cryogenic operation results for the first VCTF phase, and outlines future cryogenic infrastructure upgrade plans for expanding to three Vertical Test Stands.

  3. Near Field and Far Field Effects in the Taguchi-Optimized Design of AN InP/GaAs-BASED Double Wafer-Fused Mqw Long-Wavelength Vertical-Cavity Surface-Emitting Laser

    Science.gov (United States)

    Menon, P. S.; Kandiah, K.; Mandeep, J. S.; Shaari, S.; Apte, P. R.

    Long-wavelength VCSELs (LW-VCSEL) operating in the 1.55 μm wavelength regime offer the advantages of low dispersion and optical loss in fiber optic transmission systems which are crucial in increasing data transmission speed and reducing implementation cost of fiber-to-the-home (FTTH) access networks. LW-VCSELs are attractive light sources because they offer unique features such as low power consumption, narrow beam divergence and ease of fabrication for two-dimensional arrays. This paper compares the near field and far field effects of the numerically investigated LW-VCSEL for various design parameters of the device. The optical intensity profile far from the device surface, in the Fraunhofer region, is important for the optical coupling of the laser with other optical components. The near field pattern is obtained from the structure output whereas the far-field pattern is essentially a two-dimensional fast Fourier Transform (FFT) of the near-field pattern. Design parameters such as the number of wells in the multi-quantum-well (MQW) region, the thickness of the MQW and the effect of using Taguchi's orthogonal array method to optimize the device design parameters on the near/far field patterns are evaluated in this paper. We have successfully increased the peak lasing power from an initial 4.84 mW to 12.38 mW at a bias voltage of 2 V and optical wavelength of 1.55 μm using Taguchi's orthogonal array. As a result of the Taguchi optimization and fine tuning, the device threshold current is found to increase along with a slight decrease in the modulation speed due to increased device widths.

  4. Development of III-Sb metamorphic DBR membranes on InP for vertical cavity laser applications

    Science.gov (United States)

    Addamane, S. J.; Mansoori, A.; Renteria, E. J.; Dawson, N.; Shima, D. M.; Rotter, T. J.; Hains, C. P.; Dawson, L. R.; Balakrishnan, G.

    2016-04-01

    Sb-based metamorphic DBR membranes are developed for InP-based vertical cavity laser applications. The reflectivity of the metamorphic DBR membrane is compared to the reflectivity of a lattice-matched DBR to characterize the optical quality of the DBR membrane. The metamorphic interface between InP and the III-antimonides is found to degrade the reflectivity of the DBR. Therefore, the growth temperature for the metamorphic DBR is optimized in order to obtain highly reflective (>99.8%) III-Sb thin-film membranes.

  5. Modeling of circular-grating surface-emitting lasers

    Science.gov (United States)

    Shams-Zadeh-Amiri, Ali M.

    Grating-coupled surface-emitting lasers became an area of growing interest due to their salient features. Emission from a broad area normal to the wafer surface, makes them very well suited in high power applications and two- dimensional laser arrays. These new possibilities have caused an interest in different geometries to fully develop their potential. Among them, circular-grating lasers have the additional advantage of producing a narrow beam with a circular cross section. This special feature makes them ideal for coupling to optical fibers. All existing theoretical models dealing with circular- grating lasers only consider first-order gratings, or second-order gratings, neglecting surface emission. In this thesis, the emphasis is to develop accurate models describing the laser performance by considering the radiation field. Toward this aim, and due to the importance of the radiation modes in surface-emitting structures, a theoretical study of these modes in multilayer planar structures has been done in a rigorous and systematic fashion. Problems like orthogonality of the radiation modes have been treated very accurately. We have considered the inner product of radiation modes using the distribution theory. Orthogonality of degenerate radiation modes is an important issue. We have examined its validity using the transfer matrix method. It has been shown that orthogonality of degenerate radiation modes in a very special case leads to the Brewster theorem. In addition, simple analytical formulas for the normalization of radiation modes have been derived. We have shown that radiation modes can be handled in a much easier way than has been thought before. A closed-form spectral dyadic Green's function formulation of multilayer planar structures has been developed. In this formulation, both rectangular and cylindrical structures can be treated within the same mathematical framework. The Hankel transform of some auxiliary functions defined on a circular aperture has

  6. High-energy terahertz wave parametric oscillator with a surface-emitted ring-cavity configuration.

    Science.gov (United States)

    Yang, Zhen; Wang, Yuye; Xu, Degang; Xu, Wentao; Duan, Pan; Yan, Chao; Tang, Longhuang; Yao, Jianquan

    2016-05-15

    A surface-emitted ring-cavity terahertz (THz) wave parametric oscillator has been demonstrated for high-energy THz output and fast frequency tuning in a wide frequency range. Through the special optical design with a galvano-optical scanner and four-mirror ring-cavity structure, the maximum THz wave output energy of 12.9 μJ/pulse is achieved at 1.359 THz under the pump energy of 172.8 mJ. The fast THz frequency tuning in the range of 0.7-2.8 THz can be accessed with the step response of 600 μs. Moreover, the maximum THz wave output energy from this configuration is 3.29 times as large as that obtained from the conventional surface-emitted THz wave parametric oscillator with the same experimental conditions.

  7. 2 W high efficiency PbS mid-infrared surface emitting laser

    Science.gov (United States)

    Ishida, A.; Sugiyama, Y.; Isaji, Y.; Kodama, K.; Takano, Y.; Sakata, H.; Rahim, M.; Khiar, A.; Fill, M.; Felder, F.; Zogg, H.

    2011-09-01

    High efficiency laser operation with output power exceeding 2 W was obtained for vertical external-cavity PbS based IV-VI compound surface emitting quantum-well structures. The laser showed external quantum efficiency as high as 16%. Generally, mid-infrared III-V or II-VI semiconductor laser operation utilizing interband electron transitions are restricted by Auger recombination and free carrier absorption. Auger recombination is much lower in the IV-VI semiconductors, and the free-carrier absorption is significantly reduced by an optically pumped laser structure including multi-step optical excitation layers.

  8. Reactive ion beam etching for microcavity surface emitting laser fabrication: technology and damage characterization

    International Nuclear Information System (INIS)

    Matsutani, A.; Tadokoro, T.; Koyama, F.; Iga, K.

    1993-01-01

    Reactive ion beam etching (RIBE) is an effective dry etching technique for the fabrication of micro-sized surface emitting (SE) lasers and optoelectronic devices. In this chapter, some etching characteristics for GaAs, InP and GaInAsP with a Cl 2 gas using an RIBE system are discussed. Micro-sized circular mesas including GaInAsP/InP multilayers with vertical sidewalls were fabricated. RIBE-induced damage in InP substrates was estimated by C-V and PL measurement. In addition, the removal of the induced damage by the second RIBE with different conditions for the InP wafer was proposed. The sidewall damage is characterized by photoluminescence emitted from the etched sidewall of a GaInAsP/InP DH wafer. (orig.)

  9. Terahertz-wave surface-emitted difference-frequency generation without quasi-phase-matching technique.

    Science.gov (United States)

    Avetisyan, Yuri H

    2010-08-01

    A scheme of terahertz (THz)-wave surface-emitted difference-frequency generation (SEDFG), which lacks the drawbacks associated with the usage of periodically orientation-inverted structures, is proposed. It is shown that both material birefringence of the bulk LiNbO(3) crystal and modal birefringence of GaAs/AlAs waveguide are sufficient to obtain SEDFG up to a frequency of approximately 3THz. The simplicity of the proposed scheme, along with the fact that there is a much smaller THz-wave decay in nonlinear crystal, makes it a good candidate for the practical realization of efficient THz generation. The use of a GaAs waveguide with an oxidized AlAs layer is proposed for enhanced THz-wave SEDFG in the vicinity of the GaAs polariton resonance at 8THz.

  10. Continuously tunable monomode mid-infrared vertical external cavity surface emitting laser on Si

    Science.gov (United States)

    Khiar, A.; Rahim, M.; Fill, M.; Felder, F.; Hobrecker, F.; Zogg, H.

    2010-10-01

    A tunable PbTe based mid-infrared vertical external cavity surface emitting laser is described. The active part is a ˜1 μm thick PbTe layer grown epitaxially on a Bragg mirror on the Si-substrate. The cavity is terminated with a curved Si/SiO Bragg top mirror and pumped optically with a 1.55 μm laser. Cavity length is <100 μm in order that only one longitudinal mode is supported. By changing the cavity length, up to 5% wavelength continuous and mode-hop free tuning is achieved at fixed temperature. The total tuning extends from 5.6 to 4.7 μm at 100-170 K operation temperature.

  11. Optical Characterizations of VCSEL for Emission at 850 nm with Al Oxide Confinement Layers

    Science.gov (United States)

    Mokhtari, Merwan; Pagnod-Rossiaux, Philippe; Laruelle, Francois; Landesman, Jean-Pierre; Moreac, Alain; Levallois, Christophe; Cassidy, Daniel T.

    2018-03-01

    In-plane micro-photoluminescence (μ-PL) and micro-reflectivity measurements have been performed at room temperature by optical excitation perpendicular to the surface of two different structures: a complete vertical surface-emitting laser (VCSEL) structure and a VCSEL without the upper p-type distributed Bragg reflector (P-DBR). The two structures were both laterally oxidized and measurements were made on the top of oxidized and unoxidized regions. We show that, since the photoluminescence (PL) spectra consist of the cumulative effect of InGaAs/AlGaAs multi-quantum wells (MQWs) luminescence and interferences in the DBR, the presence or not of the P-DBR and oxide layers can significantly modify the spectrum. μ-PL mapping performed on full VCSEL structures clearly shows oxidized and unoxidized regions that are not resolved with visible light optical microscopy. Finally, preliminary measurements of the degree of polarization (DOP) of the PL have been made on a complete VCSEL structure before and after an oxidation process. We obtain an image of DOP measured by polarization-resolved μ-PL. These measurements allow us to evaluate the main components of strain.

  12. Design of photonic crystal surface emitting lasers with indium-tin-oxide top claddings

    Science.gov (United States)

    Huang, Shen-Che; Hong, Kuo-Bin; Chiu, Han-Lun; Lan, Shao-Wun; Chang, Tsu-Chi; Li, Heng; Lu, Tien-Chang

    2018-02-01

    Electrically pumped GaAs-based photonic crystal surface emitting lasers were fabricated using a simple fabrication process by directly capping the indium-tin-oxide transparent conducting thin film as the top cladding layer upon a photonic crystal layer. Optimization of the separate-confinement heterostructures of a laser structure is crucial to improving characteristics by providing advantageous optical confinements. The turn-on voltage, series resistance, threshold current, and slope efficiency of the laser with a 100 × 100 μm2 photonic crystal area operated at room temperature were 1.3 V, 1.5 Ω, 121 mA, and 0.2 W/A, respectively. Furthermore, we demonstrated a single-lobed lasing wavelength of 928.6 nm at 200 mA and a wavelength redshift rate of 0.05 nm/K in temperature-dependent measurements. The device exhibited the maximum output power of approximately 400 mW at an injection current of 2 A; moreover, divergence angles of less than 1° for the unpolarized circular-shaped laser beam were measured at various injection currents. Overall, the low threshold current, excellent beam quality, small divergence, high output power, and high-operating-temperature (up to 343 K) of our devices indicate that they can potentially fill the requirements for next-generation light sources and optoelectronic devices.

  13. Surface-Emitting Distributed Feedback Terahertz Quantum-Cascade Lasers in Metal-Metal Waveguides

    Science.gov (United States)

    Kumar, Sushil; Williams, Benjamin S.; Qin, Qi; Lee, Alan W. M.; Hu, Qing; Reno, John L.

    2007-01-01

    Single-mode surface-emitting distributed feedback terahertz quantumcascade lasers operating around 2.9 THz are developed in metal-metal waveguides. A combination of techniques including precise control of phase of reflection at the facets, and u e of metal on the sidewalls to eliminate higher-order lateral modes allow robust single-mode operation over a range of approximately 0.35 THz. Single-lobed far-field radiation pattern is obtained using a pi phase-shift in center of the second-order Bragg grating. A grating device operating at 2.93 THz lased up to 149 K in pulsed mode and a temperature tuning of 19 .7 GHz was observed from 5 K to 147 K. The same device lased up to 78 K in continuous-wave (cw) mode emitting more than 6 m W of cw power at 5 K. ln general, maximum temperature of pulsed operation for grating devices was within a few Kelvin of that of multi-mode Fabry-Perot ridge lasers

  14. Photodegradation and polarization properties of vertical external surface-emitting organic laser

    International Nuclear Information System (INIS)

    Leang, Tatiana

    2014-01-01

    Although organic solid-state dye lasers can provide wavelength tunability in the whole visible spectrum and offers perspectives of low-cost compact lasers, they are still limited by several drawbacks, especially photodegradation. The geometry of a Vertical External Cavity Surface-emitting Organic Laser (VECSOL) enables organic lasers to reach high energies, excellent conversion efficiencies and good beam quality, it also enables an external control on many parameters, a feature that we have used here to study the photodegradation phenomenon as well as some polarization properties of organic solid-state lasers. In the first part of this thesis, we studied the lifetime of the laser upon varying several parameters (pump pulse-width, repetition rate, output coupling,...) and we found that the intracavity laser intensity, independently of the pump intensity, had a major on photodegradation rate. Moreover, we observed that the profile of the laser beam was also degrading with time: while it is Gaussian in the beginning it gradually shifts to an annular shape. In the second part, we investigated the polarization properties of VECSOLs, with a special emphasis on fluorescence properties of some typical dyes used in lasers. The crucial role played by resonant non-radiative energy transfers between dye molecules (HOMO-FRET) is evidenced and enables explaining the observed fluorescence depolarization, compared to the expected limiting fluorescence anisotropy. Energy transfers happen to play a negligible role above laser threshold, as the organic laser beam is shown to be linearly polarized in a wide range of experimental conditions when excitation occurs in the first singlet state. (author) [fr

  15. 5-μm vertical external-cavity surface-emitting laser (VECSEL) for spectroscopic applications

    Science.gov (United States)

    Rahim, M.; Khiar, A.; Felder, F.; Fill, M.; Zogg, H.; Sigrist, M. W.

    2010-08-01

    Mid-IR tunable VECSELs (Vertical External-Cavity Surface-Emitting Lasers) emitting at 4-7 μm wavelengths and suitable for spectroscopic sensing applications are described. They are realized with lead-chalcogenide (IV-VI) narrow band gap materials. The active part, a single 0.6-2-μm thick PbTe or PbSe gain layer, is grown onto an epitaxial Bragg mirror consisting of two or three Pb1- y Eu y Te/BaF2 quarter-wavelength layer pairs. All layers are deposited by MBE in a single run employing a BaF2 or Si substrate, no further processing is needed. The cavity is completed with an external curved top mirror, which is again realized with an epitaxial Bragg structure. Pumping is performed optically with a 1.5-μm laser. Maximum output power for pulsed operation is currently up to >1 Wp at -173°C and >10 mW at 10°C. In continuous wave (CW) operation, 18 mW at 100 K are reached. Still higher operating temperatures and/or powers are expected with better heat-removal structures and better designs employing QW (Quantum-Wells). Advantages of mid-IR VECSELs compared to edge-emitting lasers are their very good beam quality (circular beam with 15 μm are accessible with Pb1- y X y Z (X=Sr, Eu, Sn, Z=Se, Te) and/or including QW.

  16. Hybrid Vertical-Cavity Laser

    DEFF Research Database (Denmark)

    2010-01-01

    The present invention provides a light source (2) for light circuits on a silicon platform (3). A vertical laser cavity is formed by a gain region (101) arranged between a top mirror (4) and a bottom grating-mirror (12) in a grating region (11) in a silicon layer (10) on a substrate. A waveguide...... (18, 19) for receiving light from the grating region (11) is formed within or to be connected to the grating region, and functions as an 5 output coupler for the VCL. Thereby, vertical lasing modes (16) are coupled to lateral in-plane modes (17, 20) of the in-plane waveguide formed in the silicon...

  17. Highly Selective Volatile Organic Compounds Breath Analysis Using a Broadly-Tunable Vertical-External-Cavity Surface-Emitting Laser.

    Science.gov (United States)

    Tuzson, Béla; Jágerská, Jana; Looser, Herbert; Graf, Manuel; Felder, Ferdinand; Fill, Matthias; Tappy, Luc; Emmenegger, Lukas

    2017-06-20

    A broadly tunable mid-infrared vertical-external-cavity surface-emitting laser (VECSEL) is employed in a direct absorption laser spectroscopic setup to measure breath acetone. The large wavelength coverage of more than 30 cm -1 at 3.38 μm allows, in addition to acetone, the simultaneous measurement of isoprene, ethanol, methanol, methane, and water. Despite the severe spectral interferences from water and alcohols, an unambiguous determination of acetone is demonstrated with a precision of 13 ppbv that is achieved after 5 min averaging at typical breath mean acetone levels in synthetic gas samples mimicking human breath.

  18. 4.5 μm wavelength vertical external cavity surface emitting laser operating above room temperature

    Science.gov (United States)

    Rahim, M.; Khiar, A.; Felder, F.; Fill, M.; Zogg, H.

    2009-05-01

    A midinfrared vertical external cavity surface emitting laser with 4.5 μm emission wavelength and operating above room temperature has been realized. The active part consists of a single 850 nm thick epitaxial PbSe gain layer. It is followed by a 2 1/2 pair Pb1-yEuyTe/BaF2 Bragg mirror. No microstructural processing is needed. Excitation is done optically with a 1.5 μm wavelength laser. The device operates up to 45 °C with 100 ns pulses and delivers 6 mW output power at 27 °C heat-sink temperature.

  19. A high-energy, low-threshold tunable intracavity terahertz-wave parametric oscillator with surface-emitted configuration

    International Nuclear Information System (INIS)

    Wang, Y Y; Xu, D G; Jiang, H; Zhong, K; Yao, J Q

    2013-01-01

    A high-energy, low-threshold THz-wave output has been experimentally demonstrated with an intracavity terahertz-wave parametric oscillator based on a surface-emitted configuration, which was pumped by a diode-side-pumped Q-switched Nd:YAG laser. Different beam sizes and repetition rates of the pump light have been investigated for high-energy and high-efficiency THz-wave generation. The maximum THz-wave output energy of 283 nJ/pulse was obtained at 1.54 THz under an intracavity 1064 nm pump energy of 59 mJ. The conversion efficiency was 4.8 × 10 −6 , corresponding to a photon conversion efficiency of 0.088%. The pump threshold was 12.9 mJ/pulse. A continuously tunable range from 0.75 to 2.75 THz was realized. (paper)

  20. Lead-chalcogenide mid-infrared vertical external cavity surface emitting lasers with improved threshold: Theory and experiment

    Science.gov (United States)

    Fill, Matthias; Debernardi, Pierluigi; Felder, Ferdinand; Zogg, Hans

    2013-11-01

    Mid-infrared Vertical External Cavity Surface Emitting Lasers (VECSEL) based on narrow gap lead-chalcogenide (IV-VI) semiconductors exhibit strongly reduced threshold powers if the active layers are structured laterally for improved optical confinement. This is predicted by 3-d optical calculations; they show that lateral optical confinement is needed to counteract the anti-guiding features of IV-VIs due to their negative temperature dependence of the refractive index. An experimental proof is performed with PbSe quantum well based VECSEL grown on a Si-substrate by molecular beam epitaxy and emitting around 3.3 μm. With proper mesa-etching, the threshold intensity is about 8-times reduced.

  1. Modular PbSrS/PbS mid-infrared vertical external cavity surface emitting laser on Si

    Science.gov (United States)

    Khiar, A.; Rahim, M.; Fill, M.; Felder, F.; Zogg, H.; Cao, D.; Kobayashi, S.; Yokoyama, T.; Ishida, A.

    2011-07-01

    A mid-infrared vertical external cavity surface emitting laser (VECSEL) based on undoped PbS is described herein. A 200 nm-thick PbS active layer embedded between PbSrS cladding layers forms a double heterostructure. The layers are grown on a lattice and thermal expansion mismatched Si-substrate. The substrate is placed onto a flat bottom Bragg mirror again grown on a Si substrate, and the VECSEL is completed with a curved top mirror. Pumping is done optically with a 1.55 μm laser diode. This leads to an extremely simple modular fabrication process. Lasing wavelengths range from 3-3.8 μm at 100-260 K heat sink temperature. The lowest threshold power is ˜210 mWp and highest output power is ˜250 mWp. The influence of the different recombination mechanism as well as free carrier absorption on the threshold power is modeled.

  2. Lead-chalcogenide mid-infrared vertical external cavity surface emitting lasers with improved threshold: Theory and experiment

    Energy Technology Data Exchange (ETDEWEB)

    Fill, Matthias [ETH Zurich, Laser Spectroscopy and Sensing Lab, 8093 Zurich (Switzerland); Phocone AG, 8005 Zurich (Switzerland); Debernardi, Pierluigi [IEIIT-CNR, Torino 10129 (Italy); Felder, Ferdinand [Phocone AG, 8005 Zurich (Switzerland); Zogg, Hans [ETH Zurich (Switzerland)

    2013-11-11

    Mid-infrared Vertical External Cavity Surface Emitting Lasers (VECSEL) based on narrow gap lead-chalcogenide (IV-VI) semiconductors exhibit strongly reduced threshold powers if the active layers are structured laterally for improved optical confinement. This is predicted by 3-d optical calculations; they show that lateral optical confinement is needed to counteract the anti-guiding features of IV-VIs due to their negative temperature dependence of the refractive index. An experimental proof is performed with PbSe quantum well based VECSEL grown on a Si-substrate by molecular beam epitaxy and emitting around 3.3 μm. With proper mesa-etching, the threshold intensity is about 8-times reduced.

  3. PbSe quantum well mid-infrared vertical external cavity surface emitting laser on Si-substrates

    Science.gov (United States)

    Fill, M.; Khiar, A.; Rahim, M.; Felder, F.; Zogg, H.

    2011-05-01

    Mid-infrared vertical external cavity surface emitting lasers based on PbSe/PbSrSe multi-quantum-well structures on Si-substrates are realized. A modular design allows growing the active region and the bottom Bragg mirror on two different Si-substrates, thus facilitating comparison between different structures. Lasing is observed from 3.3 to 5.1 μm wavelength and up to 52 °C heat sink temperature with 1.55 μm optical pumping. Simulations show that threshold powers are limited by Shockley-Read recombination with lifetimes as short as 0.1 ns. At higher temperatures, an additional threshold power increase occurs probably due to limited carrier diffusion length and carrier leakage, caused by an unfavorable band alignment.

  4. InGaN multiple-quantum-well epifilms on GaN-sillicon substrates for microcavities and surface-emitting lasers

    International Nuclear Information System (INIS)

    Lee, June Key; Cho, Hoon; Kim, Bok Hee; Park, Si Hyun; Gu, Erdan; Watson, Ian; Dawson, Martin

    2006-01-01

    We report the processing of InGaN/GaN epifilms on GaN-silicon substrates. High-quality InGaN/GaN multi-quantum wells (MQWs) were grown on GaN-silicon substrates, and their membranes were successfully fabricated using a selective wet etching of silicon followed by a dry etching of the AlGaN buffer layer. With atomic force microscope (AFM) measurements and photoluminescence (PL) measurements, we investigated the physical and the optical properties of the InGaN/GaN MQWs membranes. On the InGaN/GaN MQW membranes, dielectric distributed Bragg reflector (DBRs) were successfully deposited, which give, new possibilities for use in GaN microcavity and surface-emitting laser fabrication.

  5. Mid-infrared PbTe vertical external cavity surface emitting laser on Si-substrate with above 1 W output power

    Science.gov (United States)

    Rahim, M.; Fill, M.; Felder, F.; Chappuis, D.; Corda, M.; Zogg, H.

    2009-12-01

    Mid-infrared vertical external cavity surface emitting lasers (VECSELs) emitting above 1 W output power in pulsed mode and up to 17 mW in continuous mode at -172 °C were realized. Emission wavelength changes from 5 μm at -172 °C to 3.6 μm at 20 °C heat sink temperature. The active medium is a one wavelength thick PbTe layer grown by molecular beam epitaxy on a Si-substrate. It is followed by a 2.5 pair Pb1-yEuyTe/EuTe epitaxial Bragg mirror. The cavity is completed with an external curved Pb1-yEuyTe/BaF2 mirror. The VECSEL is optically pumped with 1.55 μm wavelength laser and In-soldered to Cu heat sink. No microstructural processing is needed.

  6. Commercialized VCSEL components fabricated at TrueLight Corporation

    Science.gov (United States)

    Pan, Jin-Shan; Lin, Yung-Sen; Li, Chao-Fang A.; Chang, C. H.; Wu, Jack; Lee, Bor-Lin; Chuang, Y. H.; Tu, S. L.; Wu, Calvin; Huang, Kai-Feng

    2001-05-01

    TrueLight Corporation was found in 1997 and it is the pioneer of VCSEL components supplier in Taiwan. We specialize in the production and distribution of VCSEL (Vertical Cavity Surface Emitting Laser) and other high-speed PIN-detector devices and components. Our core technology is developed to meet blooming demand of fiber optic transmission. Our intention is to diverse the device application into data communication, telecommunication and industrial markets. One mission is to provide the high performance, highly reliable and low-cost VCSEL components for data communication and sensing applications. For the past three years, TrueLight Corporation has entered successfully into the Gigabit Ethernet and the Fiber Channel data communication area. In this paper, we will focus on the fabrication of VCSEL components. We will present you the evolution of implanted and oxide-confined VCSEL process, device characterization, also performance in Gigabit data communication and the most important reliability issue

  7. Novel Cavities in Vertical External Cavity Surface Emitting Lasers for Emission in Broad Spectral Region by Means of Nonlinear Frequency Conversion

    Science.gov (United States)

    Lukowski, Michal L.

    Optically pumped semiconductor vertical external cavity surface emitting lasers (VECSEL) were first demonstrated in the mid 1990's. Due to the unique design properties of extended cavity lasers VECSELs have been able to provide tunable, high-output powers while maintaining excellent beam quality. These features offer a wide range of possible applications in areas such as medicine, spectroscopy, defense, imaging, communications and entertainment. Nowadays, newly developed VECSELs, cover the spectral regions from red (600 nm) to around 5 microm. By taking the advantage of the open cavity design, the emission can be further expanded to UV or THz regions by the means of intracavity nonlinear frequency generation. The objective of this dissertation is to investigate and extend the capabilities of high-power VECSELs by utilizing novel nonlinear conversion techniques. Optically pumped VECSELs based on GaAs semiconductor heterostructures have been demonstrated to provide exceptionally high output powers covering the 900 to 1200 nm spectral region with diffraction limited beam quality. The free space cavity design allows for access to the high intracavity circulating powers where high efficiency nonlinear frequency conversions and wavelength tuning can be obtained. As an introduction, this dissertation consists of a brief history of the development of VECSELs as well as wafer design, chip fabrication and resonator cavity design for optimal frequency conversion. Specifically, the different types of laser cavities such as: linear cavity, V-shaped cavity and patented T-shaped cavity are described, since their optimization is crucial for transverse mode quality, stability, tunability and efficient frequency conversion. All types of nonlinear conversions such as second harmonic, sum frequency and difference frequency generation are discussed in extensive detail. The theoretical simulation and the development of the high-power, tunable blue and green VECSEL by the means of type I

  8. Low power consumption O-band VCSEL sources for upstream channels in PON systems

    DEFF Research Database (Denmark)

    Vegas Olmos, Juan José; Rodes Lopez, Roberto; Tafur Monroy, Idelfonso

    2012-01-01

    This paper presents an experimental validation of a low power optical network unit employing vertical-cavity surface-emitting lasers as upstream sources for passive optical networks with an increased power budget, enabling even larger splitting ratios....

  9. Atomic Interferometry, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — Vertical cavity surface emitting lasers (VCSELs) is a new technology which can be used for developing high performance laser components for atom-based sensors...

  10. Single-photon emission at a rate of 143 MHz from a deterministic quantum-dot microlens triggered by a mode-locked vertical-external-cavity surface-emitting laser

    Energy Technology Data Exchange (ETDEWEB)

    Schlehahn, A.; Gschrey, M.; Schnauber, P.; Schulze, J.-H.; Rodt, S.; Strittmatter, A.; Heindel, T., E-mail: tobias.heindel@tu-berlin.de; Reitzenstein, S. [Institut für Festkörperphysik, Technische Universität Berlin, Berlin 10623 (Germany); Gaafar, M.; Vaupel, M.; Stolz, W.; Rahimi-Iman, A.; Koch, M. [Department of Physics and Materials Science Center, Philipps-Universität Marburg, 35032 Marburg (Germany)

    2015-07-27

    We report on the realization of a quantum dot (QD) based single-photon source with a record-high single-photon emission rate. The quantum light source consists of an InGaAs QD which is deterministically integrated within a monolithic microlens with a distributed Bragg reflector as back-side mirror, which is triggered using the frequency-doubled emission of a mode-locked vertical-external-cavity surface-emitting laser (ML-VECSEL). The utilized compact and stable laser system allows us to excite the single-QD microlens at a wavelength of 508 nm with a pulse repetition rate close to 500 MHz at a pulse width of 4.2 ps. Probing the photon statistics of the emission from a single QD state at saturation, we demonstrate single-photon emission of the QD-microlens chip with g{sup (2)}(0) < 0.03 at a record-high single-photon flux of (143 ± 16) MHz collected by the first lens of the detection system. Our approach is fully compatible with resonant excitation schemes using wavelength tunable ML-VECSELs, which will optimize the quantum optical properties of the single-photon emission in terms of photon indistinguishability.

  11. High-speed highly temperature stable 980 nm VCSELs operating at 25 Gb/s at up to 85 °C for short reach optical interconnects

    Science.gov (United States)

    Mutig, Alex; Lott, James A.; Blokhin, Sergey A.; Moser, Philip; Wolf, Philip; Hofmann, Werner; Nadtochiy, Alexey M.; Bimberg, Dieter

    2011-03-01

    The progressive penetration of optical communication links into traditional copper interconnect markets greatly expands the applications of vertical cavity surface emitting lasers (VCSELs) for the next-generation of board-to-board, moduleto- module, chip-to-chip, and on-chip optical interconnects. Stability of the VCSEL parameters at high temperatures is indispensable for such applications, since these lasers typically reside directly on or near integrated circuit chips. Here we present 980 nm oxide-confined VCSELs operating error-free at bit rates up to 25 Gbit/s at temperatures as high as 85 °C without adjustment of the drive current and peak-to-peak modulation voltage. The driver design is therefore simplified and the power consumption of the driver electronics is lowered, reducing the production and operational costs. Small and large signal modulation experiments at various temperatures from 20 up to 85 °C for lasers with different oxide aperture diameters are presented in order to analyze the physical processes controlling the performance of the VCSELs. Temperature insensitive maximum -3 dB bandwidths of around 13-15 GHz for VCSELs with aperture diameters of 10 μm and corresponding parasitic cut-off frequencies exceeding 22 GHz are observed. Presented results demonstrate the suitability of our VCSELs for practical high speed and high temperature stable short-reach optical links.

  12. 32 x 16 CMOS smart pixel array for optical interconnects

    Science.gov (United States)

    Kim, Jongwoo; Guilfoyle, Peter S.; Stone, Richard V.; Hessenbruch, John M.; Choquette, Kent D.; Kiamilev, Fouad E.

    2000-05-01

    Free space optical interconnects can increase throughput capacities and eliminate much of the energy consumption required for `all electronic' systems. High speed optical interconnects can be achieved by integrating optoelectronic devices with conventional electronics. Smart pixel arrays have been developed which use optical interconnects. An individual smart pixel cell is composed of a vertical cavity surface emitting laser (VCSEL), a photodetector, an optical receiver, a laser driver, and digital logic circuitry. Oxide-confined VCSELs are being developed to operate at 850 nm with a threshold current of approximately 1 mA. Multiple quantum well photodetectors are being fabricated from AlGaAs for use with the 850 nm VCSELs. The VCSELs and photodetectors are being integrated with complementary metal oxide semiconductor (CMOS) circuitry using flip-chip bonding. CMOS circuitry is being integrated with a 32 X 16 smart pixel array. The 512 smart pixels are serially linked. Thus, an entire data stream may be clocked through the chip and output electrically by the last pixel. Electrical testing is being performed on the CMOS smart pixel array. Using an on-chip pseudo random number generator, a digital data sequence was cycled through the chip verifying operation of the digital circuitry. Although, the prototype chip was fabricated in 1.2 micrometers technology, simulations have demonstrated that the array can operate at 1 Gb/s per pixel using 0.5 micrometers technology.

  13. Direct high-frequency modulation of VCSELs and applications in fibre optic RF and microwave links

    International Nuclear Information System (INIS)

    Larsson, Anders; Carlsson, Christina; Gustavsson, Johan; Haglund, Asa; Modh, Peter; Bengtsson, Joergen

    2004-01-01

    With the rapid development of wireless communication networks there is an increasing demand for efficient and cost-effective transmission and distribution of RF signals. Fibre optic RF links, employing directly modulated semiconductor lasers, provide many of the desired characteristics for such distribution systems and in the search for cost-effective solutions, the vertical cavity surface emitting laser (VCSEL) is of interest. It has therefore been the purpose of this work to investigate whether 850 nm VCSELs fulfil basic performance requirements for fibre optic RF links operating in the low-GHz range. The performance of single- and multimode oxide confined VCSELs has been compared, in order to pin-point limitations and to find the optimum design. Fibre optic RF links using VCSELs and multimode fibres have been assembled and evaluated with respect to performance characteristics of importance for wireless communication systems. We have found that optimized single-mode VCSELs provide the highest performance and that links using such VCSELs and high-bandwidth multimode fibres satisfy the requirements in a number of applications, including cellular systems for mobile communication and wireless local area networks

  14. Strong Exciton-photon Coupling in Semiconductor Microcavities

    DEFF Research Database (Denmark)

    Jensen, Jacob Riis; Borri, Paola; Hvam, Jørn Märcher

    1999-01-01

    The basic building block of vertical cavity surface emitting lasers (VCSELs) and high efficiency diodes, is a quantum well embedded in a semiconductor microcavity. The high finesse that may be achieved in such a cavity is utilised to get a low threshold current in the VCSELs and a high directiona......The basic building block of vertical cavity surface emitting lasers (VCSELs) and high efficiency diodes, is a quantum well embedded in a semiconductor microcavity. The high finesse that may be achieved in such a cavity is utilised to get a low threshold current in the VCSELs and a high......-optical switches based on semiconductor microcavities....

  15. High phase noise tolerant pilot-tone-aided DP-QPSK optical communication systems

    DEFF Research Database (Denmark)

    Zhang, Xu; Pang, Xiaodan; Deng, Lei

    2012-01-01

    In this paper we experimentally demonstrate a novel, high phase-noise tolerant, optical dual polarization (DP) quadrature phase-shift keying (QPSK) communication system based on pilot-tone-aided phase noise cancellation (PNC) algorithm. Vertical cavity surface emitting lasers (VCSELs) with approx......In this paper we experimentally demonstrate a novel, high phase-noise tolerant, optical dual polarization (DP) quadrature phase-shift keying (QPSK) communication system based on pilot-tone-aided phase noise cancellation (PNC) algorithm. Vertical cavity surface emitting lasers (VCSELs...

  16. Dynamical dispersion engineering in coupled vertical cavities employing a high-contrast grating

    DEFF Research Database (Denmark)

    Taghizadeh, Alireza; Chung, Il-Sug

    2017-01-01

    , including a case capable of dynamically controlling the photon’s effective mass to a large extent while keeping the resonance frequency same. We believe that full-control and dynamical-tuning of the photon’s effective mass may enable new possibilities for cavity quantum electrodynamics studies...

  17. Membrane Reflector Vertical Cavity Lasers at Near- and Midwave-Infrared

    Science.gov (United States)

    2014-05-30

    independent broadband reflectors based on cross-stacked gratings, Optics Express, (04 2011): 9050. doi: 10.1364/OE.19.009050 Tapas Kumar Saha, Mingyu Lu... Mingyu Lu, Huiqing Zhai, Deyin Zhao, Weidong Zhou. Design of a compact grating coupler with controllable linewidths via transverse resonance and

  18. Commercial mode-locked vertical external cavity surface emitting lasers

    Science.gov (United States)

    Head, C. Robin; Paboeuf, David; Ortega, Tiago; Lubeigt, Walter; Bialkowski, Bartlomiej; Lin, Jipeng; Hempler, Nils; Maker, Gareth T.; Malcolm, Graeme P. A.

    2018-02-01

    This paper presents the latest efforts in the development of commercial optically-pumped semiconductor disk lasers (SDLs) at M Squared Lasers. Two types of SDLs are currently being developed: an ultrafast system and a continuous wave single frequency system under the names of Dragonfly and Infinite, respectively. Both offer a compact, low-cost, easy-to-use and maintenance-free tool for a range of growing markets including nonlinear microscopy and quantum technology. To facilitate consumer uptake of the SDL technology, the performance specifications aim to closely match the currently employed systems. An extended Dragonfly system is being developed targeting the nonlinear microscopy market, which typically requires 1-W average power pulse trains with pulse durations below 200 fs. The pulse repetition frequency (PRF) of the commonly used laser systems, typically Titanium-sapphire lasers, is 80 MHz. This property is particularly challenging for mode-locked SDLs which tend to operate at GHz repetition rates, due to their short upper state carrier lifetime. Dragonfly has found a compromise at 200 MHz to balance mode-locking instabilities with a low PRF. In the ongoing development of Dragonfly, additional pulse compression and nonlinear spectral broadening stages are used to obtain pulse durations as short as 130 fs with an average power of 0.85 W, approaching the required performance. A variant of the Infinite system was adapted to provide a laser source suitable for the first stage of Sr atom cooling at 461 nm. Such a source requires average powers of approximately 1 W with a sub-MHz linewidth. As direct emission in the blue is not a viable approach at this stage, an SDL emitting at 922 nm followed by an M Squared Lasers SolTiS ECD-X doubler is currently under development. The SDL oscillator delivered >1 W of single frequency (RMS frequency noise <150kHz) light at 922 nm.

  19. Reach Extension and Capacity Enhancement of VCSEL-Based Transmission Over Single-Lane MMF Links

    DEFF Research Database (Denmark)

    Tatarczak, Anna; Motaghiannezam, S. M. Reza; Kocot, Chris

    2017-01-01

    This paper reviews and examines several techniques for expanding the carrying capacity of multimode fiber (MMF) using vertical cavity surface emitting lasers (VCSELs). The first approach utilizes short wavelength division multiplexing in combination with MMF optimized for operation between 850 an...

  20. Lippmann-Schwinger integral equation approach to the emission of radiation by sources located inside finite-sized dielectric structures

    DEFF Research Database (Denmark)

    Søndergaard, T.; Tromborg, Bjarne

    2002-01-01

    uses for analyzing the emission of light by sources in some antennas and optical components such as vertical cavity surface emitting lasers, microdisk lasers, and light emitting diodes. The methods also have prospective uses in quantum electrodynamics for studies of spontaneous emission from, e...

  1. Characterization of 850nm-15μm GaAs/AlGaAs quantum-well ...

    African Journals Online (AJOL)

    In this report, operating characteristics and performance of 15μm diameter vertical cavity surface emitting lasers (VCSELs) emitting at 850nm and fabricated by gas source molecular beam-epitaxy (GSMBE) is presented. The device characterisation is performed by observing the continuous wave (cw) operation under room ...

  2. Dielectric structures with bound modes for microcavity lasers

    NARCIS (Netherlands)

    Visser, P.M.; Allaart, K.; Lenstra, D.

    2002-01-01

    Cavity modes of dielectric microsphcres and vertical cavity surface emitting lasers, in spite of their high Q, are never exactly bound, but have a finite width due to leakage at the borders. We propose types of microstructures that sustain three-dimensionally bound modes of the radiation field when

  3. Visible laser and superluminescent diode based free space and underwater communications

    KAUST Repository

    Ooi, Boon S.

    2017-01-30

    We report on our recent progress in high-modulation-efficiency, InGaN-based integrated waveguide modulator-laser diodes (IWM-LDs), high-speed violet and blue emitting superluminescent diodes (SLDs), InGaN-based vertical-cavity surface-emitting lasers (VCSELs), and their applications for gigahertz laser based free-space and underwater wireless optical communications.

  4. 1060-nm Tunable Monolithic High Index Contrast Subwavelength Grating VCSEL

    DEFF Research Database (Denmark)

    Ansbæk, Thor; Chung, Il-Sug; Semenova, Elizaveta

    2013-01-01

    We present the first tunable vertical-cavity surface-emitting laser (VCSEL) where the top distributed Bragg reflector has been completely substituted by an air-cladded high-index-contrast subwavelength grating (HCG) mirror. In this way, an extended cavity design can be realized by reducing...

  5. Laser self-mixing interferometry in VCSELs - an ultra-compact and massproduceable deflection detection system for nanomechanical polymer cantilever sensors

    DEFF Research Database (Denmark)

    Larsson, David; Yvind, Kresten; Hvam, Jørn Märcher

    2008-01-01

    We have realised an ultra-compact deflection detection system based on laser self-mixing interferometry in a Vertical-Cavity Surface-Emitting Laser (VCSEL). The system can be used together with polymer nanomechanical cantilevers to form chemical sensors capable of detecting less than 1nm deflection....

  6. Full standard triple wireless transmission over 50m large core diameter graded index POF

    NARCIS (Netherlands)

    Shi, Y.; Morant, M.; Tangdiongga, E.; Llorente, R.; Koonen, A.M.J.

    2011-01-01

    We demonstrated for the first time a successful radio-over-1mm core diameter plastic optical fibre transmission of three simultaneous full standard wireless signals. Up to 50-m long transmission distance employing an eye-safe vertical cavity surface emitting laser has been achieved. The transmission

  7. Optimization of VCSELs for Self-Mixing Sensing

    DEFF Research Database (Denmark)

    Larsson, David; Yvind, Kresten; Chung, Il-Sug

    2010-01-01

    We have simulated the variations in optical output power from a vertical-cavity surface-emitting laser (VCSEL) subject to self-mixing feedback, which is very important for applications in sensing. In order to maximize the self-mixing signal for a given feedback we have optimized the epitaxial...

  8. Visible laser and superluminescent diode based free space and underwater communications

    KAUST Repository

    Ooi, Boon S.

    2017-01-01

    We report on our recent progress in high-modulation-efficiency, InGaN-based integrated waveguide modulator-laser diodes (IWM-LDs), high-speed violet and blue emitting superluminescent diodes (SLDs), InGaN-based vertical-cavity surface-emitting lasers (VCSELs), and their applications for gigahertz laser based free-space and underwater wireless optical communications.

  9. VCSEL Based Coherent PONs

    DEFF Research Database (Denmark)

    Jensen, Jesper Bevensee; Rodes, Roberto; Caballero Jambrina, Antonio

    2014-01-01

    We present a review of research performed in the area of coherent access technologies employing vertical cavity surface emitting lasers (VCSELs). Experimental demonstrations of optical transmission over a passive fiber link with coherent detection using VCSEL local oscillators and directly modula...

  10. Vectorial analysis of dielectric photonic crystal VCSEL

    DEFF Research Database (Denmark)

    Chung, Il-Sug; Mørk, Jesper

    2009-01-01

    A new vertical-cavity surface-emitting laser structure employing a dielectric photonic crystal mirror has been suggested and been numerically investigated. The new structure has a smaller threshold gain, a moderate strength of single-transverse-mode operation, a high quality of emission beam free...

  11. Continuous-wave Optically Pumped Lasing of Hybrid Perovskite VCSEL at Green Wavelength

    KAUST Repository

    Alias, Mohd Sharizal

    2017-05-08

    We demonstrate the lasing of a perovskite vertical-cavity surface-emitting laser at green wavelengths, which operates under continuous-wave optical pumping at room-temperature by embedding hybrid perovskite between dielectric mirrors deposited at low-temperature.

  12. Continuous-wave Optically Pumped Lasing of Hybrid Perovskite VCSEL at Green Wavelength

    KAUST Repository

    Alias, Mohd Sharizal; Liu, Zhixiong; Alatawi, Abdullah; Ng, Tien Khee; Wu, Tao; Ooi, Boon S.

    2017-01-01

    We demonstrate the lasing of a perovskite vertical-cavity surface-emitting laser at green wavelengths, which operates under continuous-wave optical pumping at room-temperature by embedding hybrid perovskite between dielectric mirrors deposited at low-temperature.

  13. All-VCSEL Transmitters With Remote Optical Injection for WDM-OFDM-PON

    DEFF Research Database (Denmark)

    Deng, Lei; Zhao, Ying; Pang, Xiaodan

    2014-01-01

    We report on a novel scheme that uses vertical cavity surface emitting lasers (VCSELs) and remote optical injection technique in the hybrid wavelength division multiplexing orthogonal frequency division multiplexing (OFDM) passive optical network. In the proposed scheme, 1.55-$\\mu{\\rm m}$ VCSELs ...

  14. 80-nm-tunable high-index-contrast subwavelength grating long-wavelength VCSEL: Proposal and numerical simulations

    DEFF Research Database (Denmark)

    Chung, Il-Sug; Mørk, Jesper; Sirbu, Alexei

    2010-01-01

    A widely-tunable single-mode long wavelength vertical-cavity surface-emitting laser structure employing a MEMStunable high-index-contrast subwavelength grating (HCG) is suggested and numerically investigated. A very large 80- nm linear tuning range was obtained as the HCG was actuated by -220 to ...

  15. Room-temperature continuous-wave operation of the In(Ga)As/GaAs quantum-dot VCSELs for the 1.3 µm optical-fibre communication

    International Nuclear Information System (INIS)

    Xu Dawei; Tong Cunzhu; Yoon, Soon Fatt; Fan Weijun; Zhang, Dao Hua; Wasiak, Michał; Piskorski, Łukasz; Gutowski, Krzysztof; Sarzała, Robert P; Nakwaski, Włodzimierz

    2009-01-01

    Efficient room-temperature (RT) continuous-wave (CW) lasing operation of the 1.3 µm MBE (molecular-beam epitaxy) In(Ga)As/GaAs quantum-dot (QD) top-emitting oxide-confined vertical-cavity surface-emitting diode lasers (VCSELs) for the second-generation optical-fibre communication has been achieved. In their design, a concept of a QD inside a quantum well (QW) has been utilized. The proposed In(Ga)As/GaAs QD active region is composed of five groups of three 8 nm In 0.15 Ga 0.85 As QWs, each containing one InAs QD sheet layer. In each group located close to successive anti-node positions of the optical standing wave within the 3λ cavity, QWs are separated by 32 nm GaAs barriers. Besides, at both active-region edges, additional single InGaAs QWs are located containing single QD layers. For the 10 µm diameter QD VCSELs, the RT CW threshold current of only 6.2 mA (7.9 kA cm −2 ), differential efficiency of 0.11 W A −1 and the maximal output power of 0.85 mW have been recorded. The experimental characteristics are in excellent agreement with theoretical ones obtained using the optical-electrical-thermal-recombination self-consistent computer model. According to this, for the 10 µm devices, the fundamental linearly polarized LP 01 mode remains the dominating one up to the current of 9.1 mA. The lowest RT CW lasing threshold below 5 mA is expected for 6 µm devices

  16. Semiconductor lasers stability, instability and chaos

    CERN Document Server

    Ohtsubo, Junji

    2017-01-01

    This book describes the fascinating recent advances made concerning the chaos, stability and instability of semiconductor lasers, and discusses their applications and future prospects in detail. It emphasizes the dynamics in semiconductor lasers by optical and electronic feedback, optical injection, and injection current modulation. Applications of semiconductor laser chaos, control and noise, and semiconductor lasers are also demonstrated. Semiconductor lasers with new structures, such as vertical-cavity surface-emitting lasers and broad-area semiconductor lasers, are intriguing and promising devices. Current topics include fast physical number generation using chaotic semiconductor lasers for secure communication, development of chaos, quantum-dot semiconductor lasers and quantum-cascade semiconductor lasers, and vertical-cavity surface-emitting lasers. This fourth edition has been significantly expanded to reflect the latest developments. The fundamental theory of laser chaos and the chaotic dynamics in se...

  17. Resonant MEMS tunable VCSEL

    DEFF Research Database (Denmark)

    Ansbæk, Thor; Chung, Il-Sug; Semenova, Elizaveta

    2013-01-01

    We demonstrate how resonant excitation of a microelectro-mechanical system can be used to increase the tuning range of a vertical-cavity surface-emitting laser two-fold by enabling both blue- and red-shifting of the wavelength. In this way a short-cavity design enabling wide tuning range can...... be realized. A high-index-contrast subwavelength grating verticalcavity surface-emitting laser with a monolithically integrated anti-reflection coating is presented. By incorporating an antireflection coating into the air cavity, higher tuning efficiency can be achieved at low threshold current. The first...

  18. Simplified nonplanar wafer bonding for heterogeneous device integration

    Science.gov (United States)

    Geske, Jon; Bowers, John E.; Riley, Anton

    2004-07-01

    We demonstrate a simplified nonplanar wafer bonding technique for heterogeneous device integration. The improved technique can be used to laterally integrate dissimilar semiconductor device structures on a lattice-mismatched substrate. Using the technique, two different InP-based vertical-cavity surface-emitting laser active regions have been integrated onto GaAs without compromising the quality of the photoluminescence. Experimental and numerical simulation results are presented.

  19. Radiation tolerant optical links for the readout of the ATLAS experiment

    CERN Document Server

    Pearce, M

    2000-01-01

    The ATLAS experiment will use radiation tolerant optical links to transfer data to and from sub-detector systems. The link specifications can be broadly divided into two classes, represented by the inner tracking detectors and the electromagnetic calorimeter. A feature common to all the readout links is the use of vertical cavity surface emitting laser diodes coupled to multimode optical fibres. Results from the development for both of these environments are reviewed with particular attention bring paid to irradiation studies. (8 refs).

  20. Advanced vectorial simulation of VCSELs with nano structures invited paper

    DEFF Research Database (Denmark)

    Chung, Il-Sug; Mørk, Jesper

    2009-01-01

    The single-mode properties and design issues of three vertical-cavity surface-emitting laser (VCSEL) structures incorporating nano structures are rigorously investigated. Nano structuring enables to deliver selective pumping or loss to the fundamental mode as well as stabilizing the output...... polarization state. Comparison of three vectorial simulation methods reveals that the modal expansion method is suitable for treating the nano structured VCSEL designs....

  1. Modal loss mechanism of micro-structured VCSELs studied using full vector FDTD method.

    Science.gov (United States)

    Jo, Du-Ho; Vu, Ngoc Hai; Kim, Jin-Tae; Hwang, In-Kag

    2011-09-12

    Modal properties of vertical cavity surface-emitting lasers (VCSELs) with holey structures are studied using a finite difference time domain (FDTD) method. We investigate loss behavior with respect to the variation of structural parameters, and explain the loss mechanism of VCSELs. We also propose an effective method to estimate the modal loss based on mode profiles obtained using FDTD simulation. Our results could provide an important guideline for optimization of the microstructures of high-power single-mode VCSELs.

  2. Vers l'intégration monolithique d'une micro-optique active en polymère sur VCELs

    OpenAIRE

    Reig , Benjamin

    2011-01-01

    This thesis deals with the study and the development of novel polymer MOEMS (Micro Optical Electrical Mechanical Systems) for Vertical-Cavity Surface-Emitting Lasers (VCSELs) passive and active beam shaping. To improve the photonic integration of these compact laser sources in optical communication and detection systems (sensors, biomedical analysis), we have designed and fabricated a polymer-based microsystem suitable for a monolithic integration on VCSELs. It includes a refractive microlens...

  3. Growth of GaAs-based VCSEL/RCE Structures for Optoelectronic Applications via Molecular Beam Epitaxy

    Directory of Open Access Journals (Sweden)

    A. S. Somintac

    2003-06-01

    Full Text Available High intensity and sharp emission peaks, at light-hole (842 nm and heavy-hole (857 nm excitonic transitionsfor a 90 Å GaAs quantum well (QW were observed for vertical-cavity surface-emitting laser (VCSELstructure. Excellent wavelength selectivity and sensitivity were demonstrated by resonant cavity enhanced(RCE photodetector at 859 nm, corresponding to the energy level of a 95 Å GaAs quantum well.

  4. InAs quantum wires on InP substrate for VCSEL applications

    OpenAIRE

    Lamy , Jean-Michel; Paranthoën , Cyril; Levallois , Christophe; Nakkar , Abdulhadi; Folliot , Hervé; Dehaese , Olivier; Le Corre , Alain; Loualiche , Slimane; Castany , Olivier; Dupont , Laurent

    2008-01-01

    International audience; Quantum dash based vertical cavity surface emitting lasers (VCSEL) on InP substrate are presented. Single and close stacking layers were successfully grown with molecular beam epitaxy. Optimized quantum dash layers exhibit a strong polarized 1.55 µm photoluminescence along the [1-10] crystallographic axis. Continuous wave laser emission is demonstrated at room temperature for the first time on a quantum dash VCSEL structure on InP susbtrate. The quantum dash VCSEL lase...

  5. Growth of GaAs-based VCSEL/RCE Structures for Optoelectronic Applications via Molecular Beam Epitaxy

    OpenAIRE

    A. S. Somintac; E. Estacio,; M. F. Bailon; A. A. Salvador

    2003-01-01

    High intensity and sharp emission peaks, at light-hole (842 nm) and heavy-hole (857 nm) excitonic transitionsfor a 90 Å GaAs quantum well (QW) were observed for vertical-cavity surface-emitting laser (VCSEL)structure. Excellent wavelength selectivity and sensitivity were demonstrated by resonant cavity enhanced(RCE) photodetector at 859 nm, corresponding to the energy level of a 95 Å GaAs quantum well.

  6. Influence of oxidation treatment on ballistic electron surface-emitting display of porous silicon

    International Nuclear Information System (INIS)

    Du, Wentao; Zhang, Xiaoning; Zhang, Yujuan; Wang, Wenjiang; Duan, Xiaotao

    2012-01-01

    Two groups of porous silicon (PS) samples are treated by rapid thermal oxidation (RTO) and electrochemical oxidation (ECO), respectively. Scanning electron microscopy images show that PS samples are segmented into two layers. Oxidized film layer is formed on the top surface of PS samples treated by RTO while at the bottom of PS samples treated by ECO. Both ECO and RTO treatment can make emission current density, diode current density, and emission efficiency of PS increase with the bias voltage increasing. The emission current density and the field emission enhancement factor β of PS sample treated by RTO are larger than that treated by ECO. The Fowler–Nordheim curves of RTO and ECO samples are linear which indicates that high electric field exists on the oxidized layer and field emission occurs whether PS is treated by RTO or ECO.

  7. Evolution of the Novalux extended cavity surface-emitting semiconductor laser (NECSEL)

    Science.gov (United States)

    McInerney, John G.

    2016-03-01

    Novalux Inc was an enterprise founded by Aram Mooradian in 1998 to commercialise a novel electrically pumped vertical extended cavity semiconductor laser platform, initially aiming to produce pump lasers for optical fiber telecommunication networks. Following successful major investment in 2000, the company developed a range of single- and multi-mode 980 nm pump lasers emitting from 100-500 mW with excellent beam quality and efficiency. This rapid development required solution of several significant problems in chip and external cavity design, substrate and DBR mirror optimization, thermal engineering and mode selection. Output coupling to single mode fiber was exceptional. Following the collapse of the long haul telecom market in late 2001, a major reorientation of effort was undertaken, initially to develop compact 60-100 mW hybrid monolithically integrated pumplets for metro/local amplified networks, then to frequency-doubled blue light emitters for biotech, reprographics and general scientific applications. During 2001-3 I worked at Novalux on a career break from University College Cork, first as R&D Director managing a small group tasked with producing new capabilities and product options based on the NECSEL platform, including high power, pulsed and frequency doubled versions, then in 2002 as Director of New Product Realization managing the full engineering team, leading the transition to frequency doubled products.

  8. Ultrafast pulse amplification in mode-locked vertical external-cavity surface-emitting lasers

    Energy Technology Data Exchange (ETDEWEB)

    Böttge, C. N., E-mail: boettge@optics.arizona.edu; Hader, J.; Kilen, I.; Moloney, J. V. [College of Optical Sciences, The University of Arizona, 1630 E. University Blvd., Tucson, Arizona 85721 (United States); Koch, S. W. [College of Optical Sciences, The University of Arizona, 1630 E. University Blvd., Tucson, Arizona 85721 (United States); Department of Physics and Material Sciences Center, Philipps-Universität Marburg, Renthof 5, 35032 Marburg (Germany)

    2014-12-29

    A fully microscopic many-body Maxwell–semiconductor Bloch model is used to investigate the influence of the non-equilibrium carrier dynamics on the short-pulse amplification in mode-locked semiconductor microlaser systems. The numerical solution of the coupled equations allows for a self-consistent investigation of the light–matter coupling dynamics, the carrier kinetics in the saturable absorber and the multiple-quantum-well gain medium, as well as the modification of the light field through the pulse-induced optical polarization. The influence of the pulse-induced non-equilibrium modifications of the carrier distributions in the gain medium and the saturable absorber on the single-pulse amplification in the laser cavity is identified. It is shown that for the same structure, quantum wells, and gain bandwidth the non-equilibrium carrier dynamics lead to two preferred operation regimes: one with pulses in the (sub-)100 fs-regime and one with multi-picosecond pulses. The recovery time of the saturable absorber determines in which regime the device operates.

  9. Generation of tunable narrow-band surface-emitted terahertz radiation in periodically poled lithium niobate.

    Science.gov (United States)

    Weiss, C; Torosyan, G; Avetisyan, Y; Beigang, R

    2001-04-15

    Generation of tunable narrow-band terahertz (THz) radiation perpendicular to the surface of periodically poled lithium niobate by optical rectification of femtosecond pulses is reported. The generated THz radiation can be tuned by use of different poling periods and different observation angles, limited only by the available bandwidth of the pump pulse. Typical bandwidths were 50-100 GHz, depending on the collection angle and the number of periods involved.

  10. Monolithic beam steering in a mid-infrared, surface-emitting, photonic integrated circuit.

    Science.gov (United States)

    Slivken, Steven; Wu, Donghai; Razeghi, Manijeh

    2017-08-16

    The mid-infrared (2.5 < λ < 25 μm) spectral region is utilized for many purposes, such as chemical/biological sensing, free space communications, and illuminators/countermeasures. Compared to near-infrared optical systems, however, mid-infrared component technology is still rather crude, with isolated components exhibiting limited functionality. In this manuscript, we make a significant leap forward in mid-infrared technology by developing a platform which can combine functions of multiple mid-infrared optical elements, including an integrated light source. In a single device, we demonstrate wide wavelength tuning (240 nm) and beam steering (17.9 degrees) in the mid-infrared with a significantly reduced beam divergence (down to 0.5 degrees). The architecture is also set up to be manufacturable and testable on a wafer scale, requiring no cleaved facets or special mirror coating to function.

  11. High power VCSELs for miniature optical sensors

    Science.gov (United States)

    Geske, Jon; Wang, Chad; MacDougal, Michael; Stahl, Ron; Follman, David; Garrett, Henry; Meyrath, Todd; Snyder, Don; Golden, Eric; Wagener, Jeff; Foley, Jason

    2010-02-01

    Recent advances in Vertical-cavity Surface-emitting Laser (VCSEL) efficiency and packaging have opened up alternative applications for VCSELs that leverage their inherent advantages over light emitting diodes and edge-emitting lasers (EELs), such as low-divergence symmetric emission, wavelength stability, and inherent 2-D array fabrication. Improvements in reproducible highly efficient VCSELs have allowed VCSELs to be considered for high power and high brightness applications. In this talk, Aerius will discuss recent advances with Aerius' VCSELs and application of these VCSELs to miniature optical sensors such as rangefinders and illuminators.

  12. Coherent population trapping magnetometer by differential detecting magneto–optic rotation effect

    International Nuclear Information System (INIS)

    Zhang Fan; Tian Yuan; Zhang Yi; Gu Si-Hong

    2016-01-01

    A pocket coherent population trapping (CPT) atomic magnetometer scheme that uses a vertical cavity surface emitting laser as a light source is proposed and experimentally investigated. Using the differential detecting magneto–optic rotation effect, a CPT spectrum with the background canceled and a high signal-to-noise ratio is obtained. The experimental results reveal that the sensitivity of the proposed scheme can be improved by half an order, and the ability to detect weak magnetic fields is extended one-fold. Therefore, the proposed scheme is suited to realize a pocket-size CPT magnetometer. (paper)

  13. Miniaturised optical sensors for industrial applications

    DEFF Research Database (Denmark)

    Jakobsen, Michael Linde; Hanson, Steen Grüner

    2010-01-01

    . The technology is based on compact and low-cost laser sources such as Vertical Cavity Surface Emitting Lasers (VCSELs). The methods characterise the object motion by speckle translation in the near field (imaging) or far field (optical Fourier transform) by optical spatial filtering velocimetry. The volume...... of the two optical solutions is less than 1 cm3, including the application specific integrated circuit (ASIC), which processes the data and interfaces a PC/Laptop directly via a USB driver. The sensors are designed for working distances of 2 and 12 mm for near field and far field, respectively. We...

  14. Radiation-hard/high-speed parallel optical links

    Energy Technology Data Exchange (ETDEWEB)

    Gan, K.K., E-mail: gan@mps.ohio-state.edu [Department of Physics, The Ohio State University, Columbus, OH 43210 (United States); Buchholz, P.; Heidbrink, S. [Fachbereich Physik, Universität Siegen, Siegen (Germany); Kagan, H.P.; Kass, R.D.; Moore, J.; Smith, D.S. [Department of Physics, The Ohio State University, Columbus, OH 43210 (United States); Vogt, M.; Ziolkowski, M. [Fachbereich Physik, Universität Siegen, Siegen (Germany)

    2016-09-21

    We have designed and fabricated a compact parallel optical engine for transmitting data at 5 Gb/s. The device consists of a 4-channel ASIC driving a VCSEL (Vertical Cavity Surface Emitting Laser) array in an optical package. The ASIC is designed using only core transistors in a 65 nm CMOS process to enhance the radiation-hardness. The ASIC contains an 8-bit DAC to control the bias and modulation currents of the individual channels in the VCSEL array. The performance of the optical engine up at 5 Gb/s is satisfactory.

  15. Fiber-optic link components for maintenance tasks in thermonuclear fusion environments

    International Nuclear Information System (INIS)

    Van Uffelen, M.; Nowodzinski, A.; Jucker, Ph.; Berghmans, F.; Brichard, B.; Vos, F.; Decreton, M.

    1999-01-01

    While standard single mode fibers proved their relative durability against radiation, our results indicate that specific rad-hard fibers can be mostly beneficial when exposed to doses exceeding the kGy-level. Gamma irradiations of multimode VCSELs (vertical cavity surface-emitting laser) confirmed their excellent radiation tolerance and thermal stability. However, particular care should be taken about the packaging, as severe degradation of focusing lenses can seriously limit the available optical power. Further experiments are planned and should complete these first results. (authors)

  16. Interchip link system using an optical wiring method.

    Science.gov (United States)

    Cho, In-Kui; Ryu, Jin-Hwa; Jeong, Myung-Yung

    2008-08-15

    A chip-scale optical link system is presented with a transmitter/receiver and optical wire link. The interchip link system consists of a metal optical bench, a printed circuit board module, a driver/receiver integrated circuit, a vertical cavity surface-emitting laser/photodiode array, and an optical wire link composed of plastic optical fibers (POFs). We have developed a downsized POF and an optical wiring method that allows on-site installation with a simple annealing as optical wiring technologies for achieving high-density optical interchip interconnection within such devices. Successful data transfer measurements are presented.

  17. Digital Photonic Receivers for Wireless and Wireline Optical Fiber Transmission Links

    DEFF Research Database (Denmark)

    Guerrero Gonzalez, Neil

    services. The experimental demonstration supported the following transmissions systems: a baseband, 5 Gbps, intensity modulation system employing a directly modulated vertical cavity surface emitting laser (VCSEL), a baseband 20 Gbps non-return-to-zero quadrature phase-shift keying (NRZ-QPSK) system...... receivers in hybrid wireless and wireline optical fiber transmission links. Furthermore, the digital signal processing framework presented in this thesis can be extended to design probabilistic-based digital photonic receivers that can find applications in cognitive heterogeneous reconfigurable optical...

  18. Study of a low power dissipation, miniature laser-pumped rubidium frequency standard

    Institute of Scientific and Technical Information of China (English)

    Liu Guo-Bin; Zhao Feng; Gu Si-Hong

    2009-01-01

    This paper studies a miniature low power consumption laser-pumped atom vapour cell clock scheme. Pumping 87Rb with a vertical cavity surface emitting laser diode pump and locking the laser frequency on a Doppler-broadened spectral line,it records a 5×10-11τ-1/2 (τ<500 s) frequency stability with a table-top system in a primary experiment.The study reveals that the evaluated scheme is at the level of 2.7 watts power consumption,90 cm3 volume and 10-12τ- 1/2 short-term frequency stability.

  19. Compliant heterogeneous assemblies of micro-VCSELs as a new materials platform for integrated optoelectronics

    Science.gov (United States)

    Kang, Dongseok; Lee, Sung-Min; Kwong, Anthony; Yoon, Jongseung

    2015-03-01

    Despite many unique advantages, vertical cavity surface emitting lasers (VCSELs) have been available mostly on rigid, planar wafers over restricted areas, thereby limiting their usage for applications that can benefit from large-scale, programmable assemblies, hybrid integration with dissimilar materials and devices, or mechanically flexible constructions. Here, materials design and fabrication strategies that address these limitations of conventional VCSELs are presented. Specialized design of epitaxial materials and etching processes, together with printing-based deterministic assemblies and substrate thermal engineering, enabled defect-free release of microscale VCSELs and their device- and circuit-level implementation on non-native, flexible substrates with performance comparable to devices on the growth substrate.

  20. Experimental coherent control of lasers

    International Nuclear Information System (INIS)

    Gordon, R.; Ramsay, A.J.; Cleaver, J.R.A.; Heberle, A.P.

    2002-01-01

    We experimentally demonstrate coherent control of a laser. A resonant 100-fs optical pulse is injected into a vertical cavity surface emitting laser to introduce a field component with well-defined phase and thereby excite beating oscillations between the transverse lasing modes. By changing the relative phase between two injected pulses, we can enhance or destroy the beating oscillations and select which lasing modes are excited. We discuss resonant pulse injection into lasers and show how mode competition improves controllability by suppressing the phase-sensitive effects of the carriers

  1. Modal gain and confinement factors in top- and bottom-emitting photonic-crystal VCSEL

    International Nuclear Information System (INIS)

    Czyszanowski, T; Thienpont, H; Panajotov, K; Dems, M

    2008-01-01

    We investigate the modal characteristics of a phosphide photonic-crystal vertical-cavity surface-emitting diode laser (VCSEL) by using the three-dimensional, full vectorial plane wave admittance method. A single-defect, photonic crystal is defined as a regular, hexagonal net of holes with varying depths. The modal gain and confinement factors are compared for two VCSEL structures: with emission either through the DBR with the photonic crystal or through the DBR free of photonic crystal. Significant improvement in the beam quality is demonstrated for the second design

  2. 4 Gbps Impulse Radio (IR) Ultra-Wideband (UWB) Transmission over 100 Meters Multi Mode Fiber with 4 Meters Wireless Transmission

    DEFF Research Database (Denmark)

    Jensen, Jesper Bevensee; Rodes Lopez, Roberto; Caballero Jambrina, Antonio

    2009-01-01

    We present experimental demonstrations of in-building impulse radio (IR) ultra-wideband (UWB) link consisting of 100 m multi mode fiber (MMF) and 4 m wireless transmission at a record 4 Gbps, and a record 8 m wireless transmission at 2.5 Gbps. A directly modulated vertical cavity surface emitting...... laser (VCSEL) was used for the generation of the optical signal. 8 m at 2.5 Gbps corresponds to a bit rate - distance product of 20; the highest yet reported for wireless IR-UWB transmission...

  3. Compactly packaged monolithic four-wavelength VCSEL array with 100-GHz wavelength spacing for future-proof mobile fronthaul transport.

    Science.gov (United States)

    Lee, Eun-Gu; Mun, Sil-Gu; Lee, Sang Soo; Lee, Jyung Chan; Lee, Jong Hyun

    2015-01-12

    We report a cost-effective transmitter optical sub-assembly using a monolithic four-wavelength vertical-cavity surface-emitting laser (VCSEL) array with 100-GHz wavelength spacing for future-proof mobile fronthaul transport using the data rate of common public radio interface option 6. The wavelength spacing is achieved using selectively etched cavity control layers and fine current adjustment. The differences in operating current and output power for maintaining the wavelength spacing of four VCSELs are fiber without any dispersion-compensation techniques.

  4. Comparison of PAM and CAP modulations robustness against mode partition noise in optical links

    Science.gov (United States)

    Stepniak, Grzegorz

    2017-08-01

    Mode partition noise (MPN) of the laser employed at the transmitter can significantly degrade the transmission performance. In the paper, we introduce a simulation model of MPN in vertical cavity surface emitting laser (VCSEL) and simulate transmission of pulse amplitude modulation (PAM) and carrierless amplitude phase (CAP) signals in multimode fiber (MMF) link. By turning off other effects, like relative intensity noise (RIN), we focus solely on the influence of MPN on transmission performance degradation. Robustness of modulation and equalization type against MPN is studied.

  5. System tests of radiation hard optical links for the ATLAS semiconductor tracker

    International Nuclear Information System (INIS)

    Charlton, D.G.; Dowell, J.D.; Homer, R.J.; Jovanovic, P.; Kenyon, I.R.; Mahout, G.; Shaylor, H.R.; Wilson, J.A.; Rudge, A.; Fopma, J.; Mandic, I.; Nickerson, R.B.; Shield, P.; Wastie, R.; Weidberg, A.R.; Eek, L.-O.; Go, A.; Lund-Jensen, B.; Pearce, M.; Soederqvist, J.; Morrissey, M.; White, D.J.

    2000-01-01

    A prototype optical data and Timing, Trigger and Control transmission system based on LEDs and PIN-diodes has been constructed. The system would be suitable in terms of radiation hardness and radiation length for use in the ATLAS SemiConductor Tracker. Bit error rate measurements were performed for the data links and for the links distributing the Timing, Trigger and Control data from the counting room to the front-end modules. The effects of cross-talk between the emitters and receivers were investigated. The advantages of using Vertical Cavity Surface Emitting Lasers (VCSELs) instead of LEDs are discussed

  6. Experimental Investigations of 3-D-/4-D-CAP Modulation With Directly Modulated VCSELs

    DEFF Research Database (Denmark)

    Binti Othman, Maisara; Zhang, Xu; Deng, Lei

    2012-01-01

    correction limit of 2.8 × 10-3 for error-free reception is achieved after 20 km of SSMF transmission. Spectral efficiencies of 2.68 and 2.08 b/s/Hz are reported for 3-D-CAP and 4-D-CAP, respectively. We believe that multidimensional modulation formats represent an attractive solution for providing more......In this letter, we present experimental investigations of multidimensional multilevel carrierless amplitude phase (CAP) modulation with directly modulated vertical cavity surface-emitting lasers. The signals are transmitted over 20 km of standard single-mode fiber (SSMF). For multilevel 3-D...

  7. Commercialization issues and funding opportunities for high-performance optoelectronic computing modules

    Science.gov (United States)

    Hessenbruch, John M.; Guilfoyle, Peter S.

    1997-01-01

    Low power, optoelectronic integrated circuits are being developed for high speed switching and data processing applications. These high performance optoelectronic computing modules consist of three primary components: vertical cavity surface emitting lasers, diffractive optical interconnect elements, and detector/amplifier/laser driver arrays. Following the design and fabrication of an HPOC module prototype, selected commercial funding sources will be evaluated to support a product development stage. These include the formation of a strategic alliance with one or more microprocessor or telecommunications vendors, and/or equity investment from one or more venture capital firms.

  8. The miniature optical transmitter and transceiver for the High-Luminosity LHC (HL-LHC) experiments

    International Nuclear Information System (INIS)

    Liu, C; Zhao, X; Deng, B; Gong, D; Guo, D; Li, X; Liang, F; Liu, G; Liu, T; Xiang, A C; Ye, J; Chen, J; Huang, D; Hou, S; Teng, P-K

    2013-01-01

    We present the design and test results of the Miniature optical Transmitter (MTx) and Transceiver (MTRx) for the high luminosity LHC (HL-LHC) experiments. MTx and MTRx are Transmitter Optical Subassembly (TOSA) and Receiver Optical Subassembly (ROSA) based. There are two major developments: the Vertical Cavity Surface Emitting Laser (VCSEL) driver ASIC LOCld and the mechanical latch that provides the connection to fibers. In this paper, we concentrate on the justification of this work, the design of the latch and the test results of these two modules with a Commercial Off-The-Shelf (COTS) VCSEL driver

  9. Characterization of InAs quantum wires on (001) InP: toward the realization of VCSEL structures with a stabilized polarization

    OpenAIRE

    Lamy , Jean-Michel; Levallois , Christophe; Nakkar , Abdulhadi; Caroff , Philippe; Paranthoen , Cyril; Dehaese , Olivier; Le Corre , Alain; Ramdane , Abderrahim; Loualiche , Slimane

    2006-01-01

    International audience; We propose a new type of long-wavelength vertical cavity surface emitting laser (VCSEL) which consists of quantum wires (QWires) layers of InAs/InGaAsP grown on InP(001) and dielectrics Bragg mirrors, in order to control the in plane polarization of output power. QWires and quantum wells growth are performed by molecular beam epitaxy. QWires present a strong photoluminescence dependence to the polarization in contrast to the quantum wells, a polarization rate of 33% is...

  10. Optical and Electrical Characterization of InGaAsN used for 1.3 µm lasers

    OpenAIRE

    Dumitras, Gheorghe

    2007-01-01

    This work represents a study of the quaternary semiconductor alloy InGaAsN, which is used in quantum-well lasers. The optical part deals with absorption as well as normal and time-resolved photoluminescence. The results of this part are used for the optimization of InGaAsN growth by molecular beam epitaxy for state-of-the-art 1.3 µm Vertical Cavity Surface Emitting Lasers (VCSEL). The influence of the thermal annealing on the optical properties of InGaAsN quantum-wells is examined. By means o...

  11. Grüne oberflächenemittierende Halbleiterlaser (VCSEL) auf Basis von II-VI-Verbindungen

    OpenAIRE

    Kruse, Carsten

    2004-01-01

    Semiconductor-based laser diodes represent a key technology, which is used e.g. for optical data storage, data transmission and metrology purposes. However, the usual edge-emitting device design has some drawbacks concerning the properties of the emitted laser beam. This can be overcome by a more sophisticated approach called vertical-cavity surface emitting laser (VCSEL). The aim of the research within this thesis was the realization of a green fully-epitaxial VCSEL based on the II-VI materi...

  12. Surface emission of InxGa1-xN epilayers under strong optical excitation

    International Nuclear Information System (INIS)

    Jiang, H.X.; Lin, J.Y.; Khan, M.A.; Chen, Q.; Yang, J.W.

    1997-01-01

    Effects of strong optical excitation on the properties of surface emission from an InGaN/GaN heterostructure grown by metal-organic chemical-vapor deposition have been investigated. An intriguing feature observed was that as the excitation intensity increased the surface emission spectrum evolved abruptly from a single dominating band to two dominating bands at a critical intensity. This phenomenon has a sharp phase transition or a switching character and can be accounted for by (i) the formation of an electron endash hole plasma state in the InGaN vertical cavity under strong optical excitation, (ii) the photoreflectance effect (variation of index of refraction with excitation intensity), and (c) the Fabry endash Pacute erot interference effect in the InGaN vertical cavity. These findings are expected to have impact on the design of the laser structures, in particular on the design of the vertical-cavity surface-emitting laser diodes based on III-nitride wide-band-gap semiconductors. copyright 1997 American Institute of Physics

  13. Size of the virtual source behind a convex spherical surface emitting a space charge limited ion current

    International Nuclear Information System (INIS)

    Chavet, I.

    1987-01-01

    A plasma source fitted with a circular orifice and emitting a space charge limited ion current can be made to operate with a convex spherical plasma boundary (meniscus) by appropriately adjusting its extraction parameters. In this case, the diameter of the virtual source behind the meniscus is much smaller than the orifice diameter. The effective value of this virtual source diameter depends significantly on various practical factors that are more or less controllable. Its lower ideal limit, however, depends only on the radio δ of the interelectrode distance to the meniscus curvature radius and on the ratio ω of the initial to final ion energy. This ideal limit is given for the ranges 0.1 ≤ δ ≤ 10 and 10 -7 ≤ ω ≤ 10 -3 . Preliminary experimental results are reported. (orig.)

  14. Vertical electro-absorption modulator design and its integration in a VCSEL

    Science.gov (United States)

    Marigo-Lombart, L.; Calvez, S.; Arnoult, A.; Thienpont, H.; Almuneau, G.; Panajotov, K.

    2018-04-01

    Electro-absorption modulators, either embedded in CMOS technology or integrated with a semiconductor laser, are of high interest for many applications such as optical communications, signal processing and 3D imaging. Recently, the integration of a surface-normal electro-absorption modulator into a vertical-cavity surface-emitting laser has been considered. In this paper we implement a simple quantum well electro-absorption model and design and optimize an asymmetric Fabry-Pérot semiconductor modulator while considering all physical properties within figures of merit. We also extend this model to account for the impact of temperature on the different parameters involved in the calculation of the absorption, such as refractive indices and exciton transition broadening. Two types of vertical modulator structures have been fabricated and experimentally characterized by reflectivity and photocurrent measurements demonstrating a very good agreement with our model. Finally, preliminary results of an electro-absorption modulator vertically integrated with a vertical-cavity surface-emitting laser device are presented, showing good modulation performances required for high speed communications.

  15. High-Capacity Short-Range Optical Communication Links

    DEFF Research Database (Denmark)

    Tatarczak, Anna

    Over the last decade, we have observed a tremendous spread of end-user mobile devices. The user base of a mobile application can grow or shrink by millions per day. This situation creates a pressing need for highly scalable server infrastructure; a need nowadays satisfied through cloud computing...... offered by data centers. As the popularity of cloud computing soars, the demand for high-speed, short-range data center links grows. Vertical cavity surface emitting lasers (VCSEL) and multimode fibers (MMF) prove especially well-suited for such scenarios. VCSELs have high modulation bandwidths......, we achieve 10 Gbps over 400 m and then conrm the approach in an optimized system at 25 Gbps over 300 m. The techniques described in this thesis leverage additional degrees of freedom to better utilize the available resources of short-range links. The proposed schemes enable higher speeds and longer...

  16. High-power VCSELs for smart munitions

    Science.gov (United States)

    Geske, Jon; MacDougal, Michael; Cole, Garrett; Snyder, Donald

    2006-08-01

    The next generation of low-cost smart munitions will be capable of autonomously detecting and identifying targets aided partly by the ability to image targets with compact and robust scanning rangefinder and LADAR capabilities. These imaging systems will utilize arrays of high performance, low-cost semiconductor diode lasers capable of achieving high peak powers in pulses ranging from 5 to 25 nanoseconds in duration. Aerius Photonics is developing high-power Vertical-Cavity Surface-Emitting Lasers (VCSELs) to meet the needs of these smart munitions applications. The authors will report the results of Aerius' development program in which peak pulsed powers exceeding 60 Watts were demonstrated from single VCSEL emitters. These compact packaged emitters achieved pulse energies in excess of 1.5 micro-joules with multi kilo-hertz pulse repetition frequencies. The progress of the ongoing effort toward extending this performance to arrays of VCSEL emitters and toward further improving laser slope efficiency will be reported.

  17. Optical data transmission ASICs for the high-luminosity LHC (HL-LHC) experiments

    International Nuclear Information System (INIS)

    Li, X; Huang, G; Sun, X; Liu, G; Deng, B; Gong, D; Guo, D; Liu, C; Liu, T; Xiang, A C; Ye, J; Zhao, X; Chen, J; You, Y; He, M; Hou, S; Teng, P-K; Jin, G; Liang, H; Liang, F

    2014-01-01

    We present the design and test results of two optical data transmission ASICs for the High-Luminosity LHC (HL-LHC) experiments. These ASICs include a two-channel serializer (LOCs2) and a single-channel Vertical Cavity Surface Emitting Laser (VCSEL) driver (LOCld1V2). Both ASICs are fabricated in a commercial 0.25-μm Silicon-on-Sapphire (SoS) CMOS technology and operate at a data rate up to 8 Gbps per channel. The power consumption of LOCs2 and LOCld1V2 are 1.25 W and 0.27 W at 8-Gbps data rate, respectively. LOCld1V2 has been verified meeting the radiation-tolerance requirements for HL-LHC experiments

  18. Recent Advances of VCSEL Photonics

    Science.gov (United States)

    Koyama, Fumio

    2006-12-01

    A vertical-cavity surface emitting laser (VCSEL) was invented 30 years ago. A lot of unique features can be expected, such as low-power consumption, wafer-level testing, small packaging capability, and so on. The market of VCSELs has been growing up rapidly in recent years, and they are now key devices in local area networks using multimode optical fibers. Also, long wavelength VCSELs are currently attracting much interest for use in single-mode fiber metropolitan area and wide area network applications. In addition, a VCSEL-based disruptive technology enables various consumer applications such as a laser mouse and laser printers. In this paper, the recent advance of VCSEL photonics will be reviewed, which include the wavelength extension of single-mode VCSELs and their wavelength integration/control. Also, this paper explores the potential and challenges for new functions of VCSELs toward optical signal processing.

  19. MBE growth of VCSELs for high volume applications

    Science.gov (United States)

    Jäger, Roland; Riedl, Michael C.

    2011-05-01

    Mass market applications like laser computer mouse or optical data transmission based on vertical-cavity surface-emitting laser (VCSEL) chips need a high over all yield including epitaxy, processing, dicing, mounting and testing. One yield limitation for VCSEL structures is the emission wavelength variation of the substrate surface area leading to the fraction on laser chips which are below or above the specification limits. For most 850 nm VCSEL products a resonator wavelength variation of ±2 nm is common. This represents an average resonator thickness variation of much less than 1% which is quite challenging to be fulfilled on the entire processed wafer surface area. A high over all yield is demonstrated on MBE grown VCSEL structures.

  20. Study of the Radiation-Hardness of VCSEL and PIN

    CERN Document Server

    Gan, K K; Fernando, W; Kagan, H P; Kass, R D; Lebbai, M R M; Merritt, H; Moore, J R; Nagarkar, A; Rizatdinova, F; Skubic, P L; Smith, D S; Strang, M

    2009-01-01

    The silicon trackers of the ATLAS experiment at the Large Hadron Collider (LHC) at CERN (Geneva) use optical links for data transmission. An upgrade of the trackers is planned for the Super LHC (SLHC), an upgraded LHC with ten times higher luminosity. We study the radiation-hardness of VCSELs (Vertical-Cavity Surface-Emitting Laser) and GaAs and silicon PINs using 24 GeV/c protons at CERN for possible application in the data transmission upgrade. The optical power of VCSEL arrays decreases significantly after the irradiation but can be partially annealed with high drive currents. The responsivities of the PIN diodes also decrease significantly after irradiation, but can be recovered by operating at higher bias voltage. This provides a simple mechanism to recover from the radiation damage.

  1. VCSEL proliferation

    Science.gov (United States)

    Tatum, Jim

    2007-02-01

    Since the commercialization of Vertical Cavity Surface Emitting Lasers (VCSELs) in 1996, Finisar's Advanced Optical Components Division has shipped well over 50 Million VCSELs. The vast majority of these were shipped into the data communications industry, which was essentially the only volume application until 2005. The driver for VCSEL manufacturing might well shift to the increasingly popular laser based optical mouse. The advantages of the laser based mouse over traditional LED mice include operation on a wider range of surfaces, higher resolution, and increased battery lifetime. What is the next application that will drive growth in VCSELs? This paper will offer a historical perspective on the emergence of VCSELs from the laboratory to reality, and the companies that have played key roles in VCSEL commercialization. Furthermore, a perspective on the market needs of future VCSEL development and applications is described.

  2. Performance of a 60-GHz DCM-OFDM and BPSK-Impulse Ultra-Wideband System with Radio-Over-Fiber and Wireless Transmission Employing a Directly-Modulated VCSEL

    DEFF Research Database (Denmark)

    Beltrán, Marta; Jensen, Jesper Bevensee; Yu, Xianbin

    2011-01-01

    The performance of radio-over-fiber optical transmission employing vertical-cavity surface-emitting lasers (VCSELs), and further wireless transmission, of the two major ultra-wideband (UWB) implementations is reported when operating in the 60-GHz radio band. Performance is evaluated at 1.44 Gbit...... in bend-insensitive single-mode fiber with wireless transmission up to 5 m in both cases is demonstrated with no penalty. A simulation analysis has also been performed in order to investigate the operational limits. The analysis results are in excellent agreement with the experimental work and indicate...... good tolerance to chromatic dispersion due to the chirp characteristics of electro-optical conversion when a directly-modulated VCSEL is employed. The performance comparison indicates that BPSK-IR UWB exhibits better tolerance to optical transmission impairments requiring lower received optical power...

  3. Comparative study on stained InGaAs quantum wells for high-speed optical-interconnect VCSELs

    Science.gov (United States)

    Li, Hui; Jia, Xiaowei

    2018-05-01

    The gain-carrier characteristics of InGaAs quantum well for 980 nm high-speed, energy-efficient vertical-cavity surface-emitting lasers are investigated. We specially studied the potentially InGaAs quantum well designs can be used for the active region of energy-efficient, temperature-stable 980-nm VCSEL, which introduced a quantum well gain peak wavelength-to-cavity resonance wavelength offset to improve the dynamic performance at high operation temperature. Several candidate quantum wells are being compared in theory and measurement. We found that ∼5 nm InGaAs QW with ∼6 nm barrier thickness is suitable for the active region of high-speed optical interconnect 980 nm VCSELs, and no significant improvement in the 20% range of In content of InGaAs QWs. The results are useful for next generation green photonic device design.

  4. Permutation entropy with vector embedding delays

    Science.gov (United States)

    Little, Douglas J.; Kane, Deb M.

    2017-12-01

    Permutation entropy (PE) is a statistic used widely for the detection of structure within a time series. Embedding delay times at which the PE is reduced are characteristic timescales for which such structure exists. Here, a generalized scheme is investigated where embedding delays are represented by vectors rather than scalars, permitting PE to be calculated over a (D -1 ) -dimensional space, where D is the embedding dimension. This scheme is applied to numerically generated noise, sine wave and logistic map series, and experimental data sets taken from a vertical-cavity surface emitting laser exhibiting temporally localized pulse structures within the round-trip time of the laser cavity. Results are visualized as PE maps as a function of embedding delay, with low PE values indicating combinations of embedding delays where correlation structure is present. It is demonstrated that vector embedding delays enable identification of structure that is ambiguous or masked, when the embedding delay is constrained to scalar form.

  5. Board-to-Board Free-Space Optical Interconnections Passing through Boards for a Bookshelf-Assembled Terabit-Per-Second-Class ATM Switch.

    Science.gov (United States)

    Hirabayashi, K; Yamamoto, T; Matsuo, S; Hino, S

    1998-05-10

    We propose free-space optical interconnections for a bookshelf-assembled terabit-per-second-class ATM switch. Thousands of arrayed optical beams, each having a rate of a few gigabits per second, propagate vertically to printed circuit boards, passing through some boards, and are connected to arbitrary transmitters and receivers on boards by polarization controllers and prism arrays. We describe a preliminary experiment using a 1-mm-pitch 2 x 2 beam-collimator array that uses vertical-cavity surface-emitting laser diodes. These optical interconnections can be made quite stable in terms of mechanical shock and temperature fluctuation by the attachment of reinforcing frames to the boards and use of an autoalignment system.

  6. High Dimensional Modulation and MIMO Techniques for Access Networks

    DEFF Research Database (Denmark)

    Binti Othman, Maisara

    Exploration of advanced modulation formats and multiplexing techniques for next generation optical access networks are of interest as promising solutions for delivering multiple services to end-users. This thesis addresses this from two different angles: high dimensionality carrierless...... the capacity per wavelength of the femto-cell network. Bit rate up to 1.59 Gbps with fiber-wireless transmission over 1 m air distance is demonstrated. The results presented in this thesis demonstrate the feasibility of high dimensionality CAP in increasing the number of dimensions and their potentially......) optical access network. 2 X 2 MIMO RoF employing orthogonal frequency division multiplexing (OFDM) with 5.6 GHz RoF signaling over all-vertical cavity surface emitting lasers (VCSEL) WDM passive optical networks (PONs). We have employed polarization division multiplexing (PDM) to further increase...

  7. Oxygen measurement by multimode diode lasers employing gas correlation spectroscopy.

    Science.gov (United States)

    Lou, Xiutao; Somesfalean, Gabriel; Chen, Bin; Zhang, Zhiguo

    2009-02-10

    Multimode diode laser (MDL)-based correlation spectroscopy (COSPEC) was used to measure oxygen in ambient air, thereby employing a diode laser (DL) having an emission spectrum that overlaps the oxygen absorption lines of the A band. A sensitivity of 700 ppm m was achieved with good accuracy (2%) and linearity (R(2)=0.999). For comparison, measurements of ambient oxygen were also performed by tunable DL absorption spectroscopy (TDLAS) technique employing a vertical cavity surface emitting laser. We demonstrate that, despite slightly degraded sensitivity, the MDL-based COSPEC-based oxygen sensor has the advantages of high stability, low cost, ease-of-use, and relaxed requirements in component selection and instrument buildup compared with the TDLAS-based instrument.

  8. Strong exciton-photon coupling in organic single crystal microcavity with high molecular orientation

    Energy Technology Data Exchange (ETDEWEB)

    Goto, Kaname [Department of Electronics, Graduate School of Science and Technology, Kyoto Institute of Technology, Matsugasaki, Sakyo-ku, Kyoto 606-8585 (Japan); Yamashita, Kenichi, E-mail: yamasita@kit.ac.jp [Faculty of Electrical Engineering and Electronics, Kyoto Institute of Technology, Matsugasaki, Sakyo-ku, Kyoto 606-8585 (Japan); Yanagi, Hisao [Graduate School of Materials Science, Nara Institute of Science and Technology (NAIST), 8916-5 Takayama, Ikoma, Nara 630-0192 (Japan); Yamao, Takeshi; Hotta, Shu [Faculty of Materials Science and Technology, Kyoto Institute of Technology, Matsugasaki, Sakyo-ku, Kyoto 606-8585 (Japan)

    2016-08-08

    Strong exciton-photon coupling has been observed in a highly oriented organic single crystal microcavity. This microcavity consists of a thiophene/phenylene co-oligomer (TPCO) single crystal laminated on a high-reflection distributed Bragg reflector. In the TPCO crystal, molecular transition dipole was strongly polarized along a certain horizontal directions with respect to the main crystal plane. This dipole polarization causes significantly large anisotropies in the exciton transition and optical constants. Especially the anisotropic exciton transition was found to provide the strong enhancement in the coupling with the cavity mode, which was demonstrated by a Rabi splitting energy as large as ∼100 meV even in the “half-vertical cavity surface emitting lasing” microcavity structure.

  9. Strong exciton-photon coupling in organic single crystal microcavity with high molecular orientation

    Science.gov (United States)

    Goto, Kaname; Yamashita, Kenichi; Yanagi, Hisao; Yamao, Takeshi; Hotta, Shu

    2016-08-01

    Strong exciton-photon coupling has been observed in a highly oriented organic single crystal microcavity. This microcavity consists of a thiophene/phenylene co-oligomer (TPCO) single crystal laminated on a high-reflection distributed Bragg reflector. In the TPCO crystal, molecular transition dipole was strongly polarized along a certain horizontal directions with respect to the main crystal plane. This dipole polarization causes significantly large anisotropies in the exciton transition and optical constants. Especially the anisotropic exciton transition was found to provide the strong enhancement in the coupling with the cavity mode, which was demonstrated by a Rabi splitting energy as large as ˜100 meV even in the "half-vertical cavity surface emitting lasing" microcavity structure.

  10. Strong exciton-photon coupling in organic single crystal microcavity with high molecular orientation

    International Nuclear Information System (INIS)

    Goto, Kaname; Yamashita, Kenichi; Yanagi, Hisao; Yamao, Takeshi; Hotta, Shu

    2016-01-01

    Strong exciton-photon coupling has been observed in a highly oriented organic single crystal microcavity. This microcavity consists of a thiophene/phenylene co-oligomer (TPCO) single crystal laminated on a high-reflection distributed Bragg reflector. In the TPCO crystal, molecular transition dipole was strongly polarized along a certain horizontal directions with respect to the main crystal plane. This dipole polarization causes significantly large anisotropies in the exciton transition and optical constants. Especially the anisotropic exciton transition was found to provide the strong enhancement in the coupling with the cavity mode, which was demonstrated by a Rabi splitting energy as large as ∼100 meV even in the “half-vertical cavity surface emitting lasing” microcavity structure.

  11. Polarization Properties of Laser Solitons

    Directory of Open Access Journals (Sweden)

    Pedro Rodriguez

    2017-04-01

    Full Text Available The objective of this paper is to summarize the results obtained for the state of polarization in the emission of a vertical-cavity surface-emitting laser with frequency-selective feedback added. We start our research with the single soliton; this situation presents two perpendicular main orientations, connected by a hysteresis loop. In addition, we also find the formation of a ring-shaped intensity distribution, the vortex state, that shows two homogeneous states of polarization with very close values to those found in the soliton. For both cases above, the study shows the spatially resolved value of the orientation angle. It is important to also remark the appearance of a non-negligible amount of circular light that gives vectorial character to all the different emissions investigated.

  12. A hybrid CATV/16-QAM-OFDM visible laser light communication system

    International Nuclear Information System (INIS)

    Lin, Chun-Yu; Li, Chung-Yi; Lu, Hai-Han; Chen, Chia-Yi; Jhang, Tai-Wei; Ruan, Sheng-Siang; Wu, Kuan-Hung

    2014-01-01

    A visible laser light communication (VLLC) system employing a vertical cavity surface emitting laser and spatial light modulator with hybrid CATV/16-QAM-OFDM modulating signals over a 5 m free-space link is proposed and demonstrated. With the assistance of a push-pull scheme, low-noise amplifier, and equalizer, good performances of composite second-order and composite triple beat are obtained, accompanied by an acceptable carrier-to-noise ratio performance for a CATV signal, and a low bit error rate value and clear constellation map are achieved for a 16-QAM-OFDM signal. Such a hybrid CATV/16-QAM-OFDM VLLC system would be attractive for providing services including CATV, Internet and telecommunication services. (paper)

  13. Demonstration of Raman-based, dispersion-managed VCSEL technology for fibre-to-the-hut application

    Science.gov (United States)

    Rotich Kipnoo, E. K.; Kiboi Boiyo, D.; Isoe, G. M.; Chabata, T. V.; Gamatham, R. R. G.; Leitch, A. W. R.; Gibbon, T. B.

    2017-03-01

    For the first time, we experimentally investigate the use of vertical cavity surface emitting lasers (VCSELs) in the fibre-to-the-home (FTTH) flavour for Africa, known as fibre-to-the-hut. Fibre-to-the-hut is a VCSEL based passive optical network technology designed and optimized for African continent. VCSELs have attracted attention in optical communication due to its vast advantages; low power consumption, relatively cheap costs among others. A 4.25 Gb/s uncooled VCSEL is used in a dispersion managed, Raman assisted network achieving beyond 100 km of error free transmission suited for FTTHut scenario. Energy-efficient high performance VCSEL is modulated using a 27-1 PRBS pattern and the signal transmitted on a G.655 fibre utilizing the minimum attenuation window.

  14. Semiconductor lasers driven by self-sustained chaotic electronic oscillators and applications to optical chaos cryptography.

    Science.gov (United States)

    Kingni, Sifeu Takougang; Mbé, Jimmi Hervé Talla; Woafo, Paul

    2012-09-01

    In this work, we numerically study the dynamics of vertical cavity surface emitting laser (VCSEL) firstly when it is driven by Chua's oscillator, secondly in case where it is driven by a broad frequency spectral bandwidth chaotic oscillator developed by Nana et al. [Commun. Nonlinear Sci. Numer. Simul. 14, 2266 (2009)]. We demonstrated that the VCSEL generated robust chaotic dynamics compared to the ones found in VCSEL subject to a sinusoidally modulated current and therefore it is more suitable for chaos encryption techniques. The synchronization characteristics and the communication performances of unidirectional coupled VCSEL driven by the broad frequency spectral bandwidth chaotic oscillators are investigated numerically. The results show that high-quality synchronization and transmission of messages can be realized for suitable system parameters. Chaos shift keying method is successfully applied to encrypt a message at a high bitrate.

  15. Free-Space Optical Interconnect Employing VCSEL Diodes

    Science.gov (United States)

    Simons, Rainee N.; Savich, Gregory R.; Torres, Heidi

    2009-01-01

    Sensor signal processing is widely used on aircraft and spacecraft. The scheme employs multiple input/output nodes for data acquisition and CPU (central processing unit) nodes for data processing. To connect 110 nodes and CPU nodes, scalable interconnections such as backplanes are desired because the number of nodes depends on requirements of each mission. An optical backplane consisting of vertical-cavity surface-emitting lasers (VCSELs), VCSEL drivers, photodetectors, and transimpedance amplifiers is the preferred approach since it can handle several hundred megabits per second data throughput.The next generation of satellite-borne systems will require transceivers and processors that can handle several Gb/s of data. Optical interconnects have been praised for both their speed and functionality with hopes that light can relieve the electrical bottleneck predicted for the near future. Optoelectronic interconnects provide a factor of ten improvement over electrical interconnects.

  16. Full 3D FDTD analysis of Electromagnetic Field in Photonic Crystal VCSEL

    International Nuclear Information System (INIS)

    Liu Fa; Xu Chen; Xie Yiyang; Zhao Zhenbo; Zhou Kang; Wang Baoqiang; Liu Yingming; Shen Guangdi

    2011-01-01

    The effect of etch damage to the mode characteristics of photonic crystal vertical cavity surface emitting lasers was simulated in this paper. The devices simulated in this paper are 850-nm GaAs-based VCSELs with photonic crystal. And the devices were simulated by using finite difference time domain (FDTD) method. Limited to the computer resource, the top DBR was simulated only, and the traverse size was smaller than the real size. In order to highlight the impact of the etch damage, several kinds of light sources and photonic crystal structures were simulated separately, and each situation is calculated in the condition of ideal photonic crystal and photonic crystal with etch damage respectively. All parameters of device and light feature are referred to the real condition.

  17. Full 3D FDTD analysis of Electromagnetic Field in Photonic Crystal VCSEL

    Energy Technology Data Exchange (ETDEWEB)

    Liu Fa; Xu Chen; Xie Yiyang; Zhao Zhenbo; Zhou Kang; Wang Baoqiang; Liu Yingming; Shen Guangdi, E-mail: liufa20719@126.com [Key Laboratory of Opto-electronics Technology (Beijing University of Technology), Ministry of Education, Beijing University of Technology, 100 Ping Le Yuan, Chaoyang District, Beijing 100124 (China)

    2011-02-01

    The effect of etch damage to the mode characteristics of photonic crystal vertical cavity surface emitting lasers was simulated in this paper. The devices simulated in this paper are 850-nm GaAs-based VCSELs with photonic crystal. And the devices were simulated by using finite difference time domain (FDTD) method. Limited to the computer resource, the top DBR was simulated only, and the traverse size was smaller than the real size. In order to highlight the impact of the etch damage, several kinds of light sources and photonic crystal structures were simulated separately, and each situation is calculated in the condition of ideal photonic crystal and photonic crystal with etch damage respectively. All parameters of device and light feature are referred to the real condition.

  18. Intraoperative imaging of pediatric vocal fold lesions using optical coherence tomography

    Science.gov (United States)

    Benboujja, Fouzi; Garcia, Jordan A.; Beaudette, Kathy; Strupler, Mathias; Hartnick, Christopher J.; Boudoux, Caroline

    2016-01-01

    Optical coherence tomography (OCT) has been previously identified as a promising tool for exploring laryngeal pathologies in adults. Here, we present an OCT handheld probe dedicated to imaging the unique geometry involved in pediatric laryngoscopy. A vertical cavity surface emitting laser-based wavelength-swept OCT system operating at 60 frames per second was coupled to the probe to acquire three-dimensional (3-D) volumes in vivo. In order to evaluate the performance of the proposed probe and system, we imaged pediatric vocal fold lesions of patients going under direct laryngoscopy. Through this in vivo study, we extracted OCT features characterizing each pediatric vocal fold lesion, which shows a great potential for noninvasive laryngeal lesion discrimination. We believe OCT vocal fold examination in 3-D will result in improved knowledge of the pediatric anatomy and could aid in managing pediatric laryngeal diseases.

  19. Semiconductor Lasers Stability, Instability and Chaos

    CERN Document Server

    Ohtsubo, Junji

    2013-01-01

    This third edition of “Semiconductor Lasers, Stability, Instability and Chaos” was significantly extended.  In the previous edition, the dynamics and characteristics of chaos in semiconductor lasers after the introduction of the fundamental theory of laser chaos and chaotic dynamics induced by self-optical feedback and optical injection was discussed. Semiconductor lasers with new device structures, such as vertical-cavity surface-emitting lasers and broad-area semiconductor lasers, are interesting devices from the viewpoint of chaotic dynamics since they essentially involve chaotic dynamics even in their free-running oscillations. These topics are also treated with respect to the new developments in the current edition. Also the control of such instabilities and chaos control are critical issues for applications. Another interesting and important issue of semiconductor laser chaos in this third edition is chaos synchronization between two lasers and the application to optical secure communication. One o...

  20. System performances of optical space code-division multiple-access-based fiber-optic two-dimensional parallel data link.

    Science.gov (United States)

    Nakamura, M; Kitayama, K

    1998-05-10

    Optical space code-division multiple access is a scheme to multiplex and link data between two-dimensional processors such as smart pixels and spatial light modulators or arrays of optical sources like vertical-cavity surface-emitting lasers. We examine the multiplexing characteristics of optical space code-division multiple access by using optical orthogonal signature patterns. The probability density function of interference noise in interfering optical orthogonal signature patterns is calculated. The bit-error rate is derived from the result and plotted as a function of receiver threshold, code length, code weight, and number of users. Furthermore, we propose a prethresholding method to suppress the interference noise, and we experimentally verify that the method works effectively in improving system performance.

  1. Experimental Demonstration of 84 Gb/s PAM-4 Over up to 1.6 km SSMF Using a 20-GHz VCSEL at 1525 nm

    DEFF Research Database (Denmark)

    Eiselt, Nicklas; Griesser, Helmut; Wei, Jinlong

    2017-01-01

    We demonstrate 84-Gb/s four-level pulse amplitude modulation (PAM-4) over up to 1.6-km standard single mode fiber using a 20-GHz single mode short cavity vertical cavity surface emitting laser diode at a transmission wavelength of 1525 nm. Different equalizer approaches including a common...... feedforward equalizer, a nonlinear Volterra equalizer (NLVE), a maximum likelihood sequence estimator (MLSE) and their combinations are evaluated working either as an equalizer for a standard PAM-4 or a partial response PAM-4 signal with seven levels. It is demonstrated that a standard FFE is not enough...... for a transmission distance of >0.6 km, while the use of an NLVE or FFE + MLSE is able to improve the transmission distance towards 1 km. The use of partial-response PAM-4 FFE in combination with a short memory MLSE is able to efficiently equalize the bandwidth limitations, showing more than 10-times BER improvement...

  2. A full-duplex working integrated optoelectronic device for optical interconnect

    Science.gov (United States)

    Liu, Kai; Fan, Huize; Huang, Yongqing; Duan, Xiaofeng; Wang, Qi; Ren, Xiaomin; Wei, Qi; Cai, Shiwei

    2018-05-01

    In this paper, a full-duplex working integrated optoelectronic device is proposed. It is constructed by integrating a vertical cavity surface emitting laser (VCSEL) unit above a resonant cavity enhanced photodetector (RCE-PD) unit. Analysis shows that, the VCSEL unit has a threshold current of 1 mA and a slop efficiency of 0.66 W/A at 849.7 nm, the RCE-PD unit obtains its maximal absorption quantum efficiency of 90.24% at 811 nm with a FWHM of 4 nm. Moreover, the two units of the proposed integrated device can work independently from each other. So that the proposed integrated optoelectronic device can work full-duplex. It can be applied for single fiber bidirectional optical interconnects system.

  3. Reflection Enhancement Using TiO2/SiO2 Bilayer Films Prepared by Cost-Effective Sol-gel Method

    Directory of Open Access Journals (Sweden)

    R. Ajay Kumar

    2017-04-01

    Full Text Available Multilayer dielectric thin film structure has been demanded for its application in optoelectronic devices such as optical waveguides, vertical cavity surface-emitting devices, biosensors etc. In this paper, we present the fabrication and characterization of bilayer thin films of TiO2/SiO2 using sol-gel spin coating method. Ellipsometer measurement showed refractive index values 1.46, 2.1 corresponding to the SiO2 and TiO2 films respectively. The FTIR transmittance peaks observed at ~970 cm-1, ~1100 cm-1 and ~1400 cm-1 are attributed to the Ti-O-Si, Si-O-Si and Ti-O-Ti bonds respectively. Maximum reflectance is observed from two bilayer film structure which can be further optimized to get the high reflection to a broad wavelength range.

  4. Investigation of the Static and Dynamic Characteristics for a Wafer-Fused C-band VCSEL in the Mode of the Optical-Electric Converter

    Science.gov (United States)

    Belkin, M. E.

    2018-01-01

    The results of an experimental study for a long wavelength vertical cavity surface-emitting laser of a wafer-fused construction as an effective resonant cavity enhanced photodetector of analog optical signals are described. The device is of interest for a number of promising microwave photonics applications and for creation of a low-cost photoreceiver in a high-speed fiber optics telecommunication system with dense wavelength division multiplexing. The schematic of the testbed, the original technique allowing to calculate the passband of the built-in optical cavity, and the results of measuring dark current, current responsivity, amplitude- and phase-frequency characteristics during the process of photo-detection are demonstrated.

  5. Metamorphic distributed Bragg reflectors for the 1440–1600 nm spectral range: Epitaxy, formation, and regrowth of mesa structures

    International Nuclear Information System (INIS)

    Egorov, A. Yu.; Karachinsky, L. Ya.; Novikov, I. I.; Babichev, A. V.; Berezovskaya, T. N.; Nevedomskiy, V. N.

    2015-01-01

    It is shown that metamorphic In 0.3 Ga 0.7 As/In 0.3 Al 0.7 As distributed Bragg reflectors (DBRs) with a reflection band at 1440–1600 nm and a reflectance of no less than 0.999 can be fabricated by molecular beam epitaxy (MBE) on a GaAs substrate. It is demonstrated that mesa structures formed from metamorphic DBRs on a GaAs substrate can be regrown by MBE and microcavities can be locally formed in two separate epitaxial processes. The results obtained can find wide application in the fabrication of vertical-cavity surface-emitting lasers (VCSELs) with a buried tunnel junction

  6. VCSELs based on arrays of sub-monolayer InGaAs quantum dots

    International Nuclear Information System (INIS)

    Blokhin, S. A.; Maleev, N. A.; Kuz'menkov, A. G.; Shernyakov, Yu. M.; Novikov, I. I.; Gordeev, N. Yu.; Dyudelev, V. V.; Sokolovskii, G. S.; Kuchinskii, V. I.; Kulagina, M. M.; Maximov, M. V.; Ustinov, V. M.; Kovsh, A. R.; Mikhrin, S. S.; Ledentsov, N. N.

    2006-01-01

    Vertical-cavity surface-emitting lasers (VCSELs) with an active region based on sub-monolayer InGaAs quantum dots and doped AlGaAs/GaAs distributed Bragg reflectors were grown by MBE. VCSELs with current aperture of 3 μm in diameter demonstrate single-mode lasing in 980-nm range with the threshold current of 0.6 mA, maximum output power up to 4 mW, and external differential efficiency of 68%. Multimode VCSELs with a (10-12)-μm aperture demonstrate ultralow internal optical loss of 0.09% per pass, which compares favorably with the best results obtained in similar lasers with undoped distributed Bragg reflectors

  7. Graphene oxide-confined synthesis of Li4Ti5O12 microspheres as high-performance anodes for lithium ion batteries

    International Nuclear Information System (INIS)

    Zhang, Jiawei; Cai, Yurong; Wu, Jun; Yao, Juming

    2015-01-01

    This paper reports a graphene oxide (GO) confined strategy to synthesize reduced GO-coated lithium titanate (Li 4 Ti 5 O 12, LTO) microspheres using as-prepared TiO 2 microspheres and GO as raw materials. The obtained samples are characterized by X-ray diffraction, field emission scanning electron microscopy and spectrophotometer. Results show that the spherical LTO is formed with approximate 1 μm diameter after hydrothermal reactions, which is due to a confined effect of GO on the surface of TiO 2 spheres. Electrochemical tests reveal that the presence of rGO can increase the capacity and cycling stability of LTO anodes, especially at higher C rate. The 3 wt% rGO-coated LTO anodes present a higher reversible Li-ion storage with a specific discharge capacity of 131.6 mAh g −1 at 5 C and 97% retention even after 500 cycles, which are more excellent than those of pristine LTO. The GO-confined method is anticipated to synthesize other electrode materials with high electrochemical performances

  8. Mode-locking of an InAs Quantum Dot Based Vertical External Cavity Surface Emitting Laser Using Atomic Layer Graphene

    Science.gov (United States)

    2015-07-16

    catalyzed on either a copper foil or on nickel coated substrates. The graphene must be transferred off of these substrates and then on to the DBR/spacer to...properties of graphene in both the exfoliated single layer graphene (SLG) and few layer graphene (FLG) flakes . Sun et al. make use of bile salts to...semiconductors and dielectrics is the transfer of CVD graphene grown on copper foils. The graphene is grown on thin Cu-foils by CVD using methane and

  9. Printed Large-Area Single-Mode Photonic Crystal Bandedge Surface-Emitting Lasers on Silicon (Open Access Publisher’s Version)

    Science.gov (United States)

    2016-01-04

    TM, p) polarizations, for PCSEL-I and -II respectively. One can see that all of these bands are very flat at the edges close to Γ point, which... organised In0. 5Ga0. 5As quantum dot laser on silicon. Electron. Lett. 41, 742–744 (2005). 7. Balakrishnan, G. et al. Room-Temperature Optically Pumped

  10. Final report on LDRD project : narrow-linewidth VCSELs for atomic microsystems.

    Energy Technology Data Exchange (ETDEWEB)

    Chow, Weng Wah; Geib, Kent Martin; Peake, Gregory Merwin; Serkland, Darwin Keith

    2011-09-01

    Vertical-cavity surface-emitting lasers (VCSELs) are well suited for emerging photonic microsystems due to their low power consumption, ease of integration with other optical components, and single frequency operation. However, the typical VCSEL linewidth of 100 MHz is approximately ten times wider than the natural linewidth of atoms used in atomic beam clocks and trapped atom research, which degrades or completely destroys performance in those systems. This report documents our efforts to reduce VCSEL linewidths below 10 MHz to meet the needs of advanced sub-Doppler atomic microsystems, such as cold-atom traps. We have investigated two complementary approaches to reduce VCSEL linewidth: (A) increasing the laser-cavity quality factor, and (B) decreasing the linewidth enhancement factor (alpha) of the optical gain medium. We have developed two new VCSEL devices that achieved increased cavity quality factors: (1) all-semiconductor extended-cavity VCSELs, and (2) micro-external-cavity surface-emitting lasers (MECSELs). These new VCSEL devices have demonstrated linewidths below 10 MHz, and linewidths below 1 MHz seem feasible with further optimization.

  11. High brightness diode lasers controlled by volume Bragg gratings

    Science.gov (United States)

    Glebov, Leonid

    2017-02-01

    Volume Bragg gratings (VBGs) recorded in photo-thermo-refractive (PTR) glass are holographic optical elements that are effective spectral and angular filters withstanding high power laser radiation. Reflecting VBGs are narrow-band spectral filters while transmitting VBGs are narrow-band angular filters. The use of these optical elements in external resonators of semiconductor lasers enables extremely resonant feedback that provides dramatic spectral and angular narrowing of laser diodes radiation without significant power and efficiency penalty. Spectral narrowing of laser diodes by reflecting VBGs demonstrated in wide spectral region from near UV to 3 μm. Commercially available VBGs have spectral width ranged from few nanometers to few tens of picometers. Efficient spectral locking was demonstrated for edge emitters (single diodes, bars, modules, and stacks), vertical cavity surface emitting lasers (VCSELs), grating coupled surface emitting lasers (GCSELs), and interband cascade lasers (ICLs). The use of multiplexed VBGs provides multiwavelength emission from a single emitter. Spectrally locked semiconductor lasers demonstrated CW power from milliwatts to a kilowatt. Angular narrowing by transmitting VBGs enables single transverse mode emission from wide aperture diode lasers having resonators with great Fresnel numbers. This feature provides close to diffraction limit divergence along a slow axis of wide stripe edge emitters. Radiation exchange between lasers by means of spatially profiled or multiplexed VBGs enables coherent combining of diode lasers. Sequence of VBGs or multiplexed VBGs enable spectral combining of spectrally narrowed diode lasers or laser modules. Thus the use of VBGs for diode lasers beam control provides dramatic increase of brightness.

  12. Large-area high-power VCSEL pump arrays optimized for high-energy lasers

    Science.gov (United States)

    Wang, Chad; Geske, Jonathan; Garrett, Henry; Cardellino, Terri; Talantov, Fedor; Berdin, Glen; Millenheft, David; Renner, Daniel; Klemer, Daniel

    2012-06-01

    Practical, large-area, high-power diode pumps for one micron (Nd, Yb) as well as eye-safer wavelengths (Er, Tm, Ho) are critical to the success of any high energy diode pumped solid state laser. Diode efficiency, brightness, availability and cost will determine how realizable a fielded high energy diode pumped solid state laser will be. 2-D Vertical-Cavity Surface-Emitting Laser (VCSEL) arrays are uniquely positioned to meet these requirements because of their unique properties, such as low divergence circular output beams, reduced wavelength drift with temperature, scalability to large 2-D arrays through low-cost and high-volume semiconductor photolithographic processes, high reliability, no catastrophic optical damage failure, and radiation and vacuum operation tolerance. Data will be presented on the status of FLIR-EOC's VCSEL pump arrays. Analysis of the key aspects of electrical, thermal and mechanical design that are critical to the design of a VCSEL pump array to achieve high power efficient array performance will be presented.

  13. Modelling optical fibers acquisition and transmission systems for their use in nuclear environments

    International Nuclear Information System (INIS)

    Van-Uffelen, Marco

    2001-01-01

    In order to introduce connections based on optical fibres in the field of civil nuclear activities, it is important to have a good knowledge of their behaviour under irradiation. The objective of this research thesis is thus to develop a tool to predict the lifetime of such an optical connection which would allow a predictive maintenance. The adopted methodology relies on a modular approach and consists in the characterization of the behaviour of individual components under test conditions which are representative of addressed applications. Transfer functions are then chained to obtain the connection predictive model. Various components have been studied: mono- and multi-mode optical fibres, light-emitting diodes, vertical-cavity surface-emitting laser diodes (VCSEL), as well as Si and InGaAs sensors. These components have been submitted to a range of dose rates and cumulated dose under temperatures reaching 85 C. Based on on-line measurements, a pragmatic approach has been assessed to predict the evolution of optical losses induced in optical fibres during several months. The difference between measurements and predictions ranges between 10 and 20 per cent depending on the fibre type and on the wavelength. VCSELs display a high tolerance to gamma radiation and a steady operation at high temperatures, whereas sensors appear to be the weakest link [fr

  14. Radiation hardness and lifetime studies of LEDs and VCSELs for the optical readout of the ATLAS SCT

    CERN Document Server

    Beringer, J; Mommsen, R K; Nickerson, R B; Weidberg, A R; Monnier, E; Hou, H Q; Lear, K L

    1999-01-01

    We study the radiation hardness and the lifetime of Light Emitting Diodes (LEDs) and Vertical Cavity Surface Emitting Laser diodes (VCSELs) in the context of the development of the optical readout for the ATLAS SemiConductor Tracker (SCT) at LHC. About 170 LEDs from two different manufacturers and about 130 VCSELs were irradiated with neutron and proton fluences equivalent to (and in some cases more than twice as high as) the combined neutral and charged particle fluence of about 5x10 sup 1 sup 4 n (1 MeV eq. in GaAs)/cm sup 2 expected in the ATLAS inner detector. We report on the radiation damage and the conditions required for its partial annealing under forward bias, we calculate radiation damage constants, and we present post-irradiation failure rates for LEDs and VCSELs. The lifetime after irradiation was investigated by operating the diodes at an elevated temperature of 50 degree sign C for several months, resulting in operating times corresponding to up to 70 years of operation in the ATLAS SCT. From o...

  15. Radiation-hard/high-speed parallel optical links

    International Nuclear Information System (INIS)

    Gan, K.K.; Buchholz, P.; Kagan, H.P.; Kass, R.D.; Moore, J.; Smith, D.S.; Wiese, A.; Ziolkowski, M.

    2014-01-01

    We have designed an ASIC for use in a parallel optical engine for a new layer of the ATLAS pixel detector in the initial phase of the LHC luminosity upgrade. The ASIC is a 12-channel VCSEL (Vertical Cavity Surface Emitting Laser) array driver capable of operating up to 5 Gb/s per channel. The ASIC is designed using a 130 nm CMOS process to enhance the radiation-hardness. A scheme for redundancy has also been implemented to allow bypassing of a broken VCSEL. The ASIC also contains a power-on reset circuit that sets the ASIC to a default configuration with no signal steering. In addition, the bias and modulation currents of the individual channels are programmable. The performance of the first prototype ASIC up to 5 Gb/s is satisfactory. Furthermore, we are able to program the bias and modulation currents and to bypass a broken VCSEL channel. We are currently upgrading our design to allow operation at 10 Gb/s per channel yielding an aggregated bandwidth of 120 Gb/s. Some preliminary results of the design will be presented

  16. Real-time multi-target ranging based on chaotic polarization laser radars in the drive-response VCSELs.

    Science.gov (United States)

    Zhong, Dongzhou; Xu, Geliang; Luo, Wei; Xiao, Zhenzhen

    2017-09-04

    According to the principle of complete chaos synchronization and the theory of Hilbert phase transformation, we propose a novel real-time multi-target ranging scheme by using chaotic polarization laser radar in the drive-response vertical-cavity surface-emitting lasers (VCSELs). In the scheme, to ensure each polarization component (PC) of the master VCSEL (MVCSEL) to be synchronized steadily with that of the slave VCSEL, the output x-PC and y-PC from the MVCSEL in the drive system and those in the response system are modulated by the linear electro-optic effect simultaneously. Under this condition, by simulating the influences of some key parameters of the system on the synchronization quality and the relative errors of the two-target ranging, related operating parameters can be optimized. The x-PC and the y-PC, as two chaotic radar sources, are used to implement the real-time ranging for two targets. It is found that the measured distances of the two targets at arbitrary position exhibit strong real-time stability and only slight jitter. Their resolutions are up to millimeters, and their relative errors are very small and less than 2.7%.

  17. Microfabrication in free-standing gallium nitride using UV laser micromachining

    International Nuclear Information System (INIS)

    Gu, E.; Howard, H.; Conneely, A.; O'Connor, G.M.; Illy, E.K.; Knowles, M.R.H.; Edwards, P.R.; Martin, R.W.; Watson, I.M.; Dawson, M.D.

    2006-01-01

    Gallium nitride (GaN) and related alloys are important semiconductor materials for fabricating novel photonic devices such as ultraviolet (UV) light-emitting diodes (LEDs) and vertical cavity surface-emitting lasers (VCSELs). Recent technical advances have made free-standing GaN substrates available and affordable. However, these materials are strongly resistant to wet chemical etching and also, low etch rates restrict the use of dry etching. Thus, to develop alternative high-resolution processing for these materials is increasingly important. In this paper, we report the fabrication of microstructures in free-standing GaN using pulsed UV lasers. An effective method was first developed to remove the re-deposited materials due to the laser machining. In order to achieve controllable machining and high resolution in GaN, machining parameters were carefully optimised. Under the optimised conditions, precision features such as holes (through holes, blind or tapered holes) on a tens of micrometer length scale have been machined. To fabricate micro-trenches in GaN with vertical sidewalls and a flat bottom, different process strategies of laser machining were tested and optimised. Using this technique, we have successfully fabricated high-quality micro-trenches in free-standing GaN with various widths and depths. The approach combining UV laser micromachining and other processes is also discussed. Our results demonstrate that the pulsed UV laser is a powerful tool for fabricating precision microstructures and devices in gallium nitride

  18. Optical pumping in a microfabricated Rb vapor cell using a microfabricated Rb discharge light source

    International Nuclear Information System (INIS)

    Venkatraman, V.; Kang, S.; Affolderbach, C.; Mileti, G.; Shea, H.

    2014-01-01

    Miniature ( 3 ) vapor-cell based devices using optical pumping of alkali atoms, such as atomic clocks and magnetometers, today mostly employ vertical-cavity surface-emitting lasers as pump light sources. Here, we report on the demonstration of optical pumping in a microfabricated alkali vapor resonance cell using (1) a microfabricated Rb discharge lamp light source, as well as (2) a conventional glass-blown Rb discharge lamp. The microfabricated Rb lamp cell is a dielectric barrier discharge (DBD) light source, having the same inner cell volume of around 40 mm 3 as that of the resonance cell, both filled with suitable buffer gases. A miniature (∼2 cm 3 volume) test setup based on the M z magnetometer interrogation technique was used for observation of optical-radiofrequency double-resonance signals, proving the suitability of the microfabricated discharge lamp to introduce efficient optical pumping. The pumping ability of this light source was found to be comparable to or even better than that of a conventional glass-blown lamp. The reported results indicate that the micro-fabricated DBD discharge lamp has a high potential for the development of a new class of miniature atomic clocks, magnetometers, and quantum sensors

  19. Optical pumping in a microfabricated Rb vapor cell using a microfabricated Rb discharge light source

    Energy Technology Data Exchange (ETDEWEB)

    Venkatraman, V.; Kang, S.; Affolderbach, C.; Mileti, G., E-mail: gaetano.mileti@unine.ch [Laboratoire Temps-Fréquence, University of Neuchâtel, Neuchâtel 2000 (Switzerland); Shea, H. [Microsystems for Space Technologies Laboratory, Ecole Polytechnique Fédérale de Lausanne (EPFL), Neuchâtel 2002 (Switzerland)

    2014-02-03

    Miniature (vertical-cavity surface-emitting lasers as pump light sources. Here, we report on the demonstration of optical pumping in a microfabricated alkali vapor resonance cell using (1) a microfabricated Rb discharge lamp light source, as well as (2) a conventional glass-blown Rb discharge lamp. The microfabricated Rb lamp cell is a dielectric barrier discharge (DBD) light source, having the same inner cell volume of around 40 mm{sup 3} as that of the resonance cell, both filled with suitable buffer gases. A miniature (∼2 cm{sup 3} volume) test setup based on the M{sub z} magnetometer interrogation technique was used for observation of optical-radiofrequency double-resonance signals, proving the suitability of the microfabricated discharge lamp to introduce efficient optical pumping. The pumping ability of this light source was found to be comparable to or even better than that of a conventional glass-blown lamp. The reported results indicate that the micro-fabricated DBD discharge lamp has a high potential for the development of a new class of miniature atomic clocks, magnetometers, and quantum sensors.

  20. On the feasibility of self-mixing interferometer sensing for detection of the surface electrocardiographic signal using a customized electro-optic phase modulator

    International Nuclear Information System (INIS)

    Bakar, A Ashrif A; Lim, Yah Leng; Wilson, Stephen J; Fuentes, Miguel; Bertling, Karl; Taimre, Thomas; Rakić, Aleksandar D; Bosch, Thierry

    2013-01-01

    Optical sensing offers an attractive option for detection of surface biopotentials in human subjects where electromagnetically noisy environments exist or safety requirements dictate a high degree of galvanic isolation. Such circumstances may be found in modern magnetic resonance imaging systems for example. The low signal amplitude and high source impedance of typical biopotentials have made optical transduction an uncommon sensing approach. We propose a solution consisting of an electro-optic phase modulator as a transducer, coupled to a vertical-cavity surface-emitting laser and the self-mixing signal detected via a photodiode. This configuration is physically evaluated with respect to synthesized surface electrocardiographic (EKG) signals of varying amplitudes and using differing optical feedback regimes. Optically detected EKG signals using strong optical feedback show the feasibility of this approach and indicate directions for optimization of the electro-optic transducer for improved signal-to-noise ratios. This may provide a new means of biopotential detection suited for environments characterized by harsh electromagnetic interference. (paper)

  1. Novel Electro-Optical Coupling Technique for Magnetic Resonance-Compatible Positron Emission Tomography Detectors

    Directory of Open Access Journals (Sweden)

    Peter D. Olcott

    2009-03-01

    Full Text Available A new magnetic resonance imaging (MRI-compatible positron emission tomography (PET detector design is being developed that uses electro-optical coupling to bring the amplitude and arrival time information of high-speed PET detector scintillation pulses out of an MRI system. The electro-optical coupling technology consists of a magnetically insensitive photodetector output signal connected to a nonmagnetic vertical cavity surface emitting laser (VCSEL diode that is coupled to a multimode optical fiber. This scheme essentially acts as an optical wire with no influence on the MRI system. To test the feasibility of this approach, a lutetium-yttrium oxyorthosilicate crystal coupled to a single pixel of a solid-state photomultiplier array was placed in coincidence with a lutetium oxyorthosilicate crystal coupled to a fast photomultiplier tube with both the new nonmagnetic VCSEL coupling and the standard coaxial cable signal transmission scheme. No significant change was observed in 511 keV photopeak energy resolution and coincidence time resolution. This electro-optical coupling technology enables an MRI-compatible PET block detector to have a reduced electromagnetic footprint compared with the signal transmission schemes deployed in the current MRI/PET designs.

  2. Novel electro-optical coupling technique for magnetic resonance-compatible positron emission tomography detectors.

    Science.gov (United States)

    Olcott, Peter D; Peng, Hao; Levin, Craig S

    2009-01-01

    A new magnetic resonance imaging (MRI)-compatible positron emission tomography (PET) detector design is being developed that uses electro-optical coupling to bring the amplitude and arrival time information of high-speed PET detector scintillation pulses out of an MRI system. The electro-optical coupling technology consists of a magnetically insensitive photodetector output signal connected to a nonmagnetic vertical cavity surface emitting laser (VCSEL) diode that is coupled to a multimode optical fiber. This scheme essentially acts as an optical wire with no influence on the MRI system. To test the feasibility of this approach, a lutetium-yttrium oxyorthosilicate crystal coupled to a single pixel of a solid-state photomultiplier array was placed in coincidence with a lutetium oxyorthosilicate crystal coupled to a fast photomultiplier tube with both the new nonmagnetic VCSEL coupling and the standard coaxial cable signal transmission scheme. No significant change was observed in 511 keV photopeak energy resolution and coincidence time resolution. This electro-optical coupling technology enables an MRI-compatible PET block detector to have a reduced electromagnetic footprint compared with the signal transmission schemes deployed in the current MRI/PET designs.

  3. A 4×8-Gbps VCSEL array driver ASIC and integration with a custom array transmitter module for the LHC front-end transmission

    International Nuclear Information System (INIS)

    Guo, Di; Liu, Chonghan; Chen, Jinghong; Chramowicz, John; Gong, Datao; He, Huiqin; Hou, Suen; Liu, Tiankuan; Prosser, Alan; Teng, Ping-Kun; Xiang, Annie C.; Xiao, Le; Ye, Jingbo

    2016-01-01

    This paper describes the design, fabrication and experiment results of a 4×8-Gbps Vertical-Cavity Surface-Emitting Laser (VCSEL) array driver ASIC with the adjustable active-shunt peaking technique and the novel balanced output structure under the Silicon-on-Sapphire (SOS) process, and a custom array optical transmitter module, featuring a compact size of 10 mm×15 mm×5.3 mm. Both the array driver ASIC and the module have been fully tested after integration as a complete parallel transmitter. Optical eye diagram of each channel passes the eye mask at 8 Gbps/ch with adjacent channel working simultaneously with a power consumption of 150 mW/ch. The optical transmission of Bit-Error Rate (BER) less than 10E-12 is achieved at an aggregated data rate of 4×8-Gbps. - Highlights: • An anode-driven VCSEL Array driver ASIC with the configurable active-shunt peaking technique in pre-driving stages. • A novel full-differential balanced output structure is used to minimize the noise and crosstalk from the power. • A custom array optical transmitter module with custom low-cost reliable alignment method.

  4. Hybrid UWB and WiMAX radio-over-multi-mode fibre for in-building optical networks

    International Nuclear Information System (INIS)

    Perez, J; Llorente, R

    2014-01-01

    In this paper the use of hybrid WiMedia-defined ultra-wideband (UWB) and IEEE 802.16d WiMAX radio-over-fibre is proposed and experimentally demonstrated for multi-mode based in-building optical networks with the advantage of great immunity to optical transmission impairments. In the proposed approach, spectral coexistence of both signals must be achieved with negligible mutual interference. The experimental study performed addressed an indoor configuration with 50 μm multi-mode fibres (MMF) and 850 nm vertical-cavity surface-emitting laser (VCSEL) transmitters. The results indicate that the impact of the wireless convergence in radio-over-multi-mode fibre (RoMMF) is significant for UWB transmissions, mainly due to MMF dispersion and electrooptical (EO) devices with limited bandwidth. On the other hand, WiMAX transmission is feasible for a 300 m MMF and 30 m wireless link in the presence of UWB, with −31 dBm WiMAX EVM. (paper)

  5. High-speed VCSEL-based optical interconnects

    Science.gov (United States)

    Ishak, Waguih S.

    2001-11-01

    Vertical Cavity Surface Emitting Lasers (VCSEL) have made significant inroads into commercial realization especially in the area of data communications. Single VCSEL devices are key components in Gb Ethernet Transceivers. A multi-element VCSEL array is the key enabling technology for high-speed multi Gb/s parallel optical interconnect modules. In 1996, several companies introduced a new generation of fiber optic products based VCSEL technology such as multimode fiber transceivers for the ANSI Fiber Channel and Gigabit Ethernet IEEE 802.3 standards. VCSELs offer unique advantages over its edge-emitting counterparts in several areas. These include low-cost (LED-like) manufacturability, low current operation and array integrability. As data rates continue to increase, VCSELs offer the advantage of being able to provide the highest modulation bandwidth per milliamp of modulation current. Currently, most of the VCSEL-based products use short (780 - 980 nm) wavelength lasers. However, significant research efforts are taking place at universities and industrial research labs around the world to develop reliable, manufacturable and high-power long (1300 - 1550 nm) wavelength VCSELs. These lasers will allow longer (several km) transmission distances and will help alleviate some of the eye-safety issues. Perhaps, the most important advantage of VCSELs is the ability to form two-dimensional arrays much easier than in the case of edge-emitting lasers. These arrays (single and two-dimensional) will allow a whole new family of applications, specifically in very high-speed computer and switch interconnects.

  6. Modeling and characterization of VCSEL-based avionics full-duplex ethernet (AFDX) gigabit links

    Science.gov (United States)

    Ly, Khadijetou S.; Rissons, A.; Gambardella, E.; Bajon, D.; Mollier, J.-C.

    2008-02-01

    Low cost and intrinsic performances of 850 nm Vertical Cavity Surface Emitting Lasers (VCSELs) compared to Light Emitting Diodes make them very attractive for high speed and short distances data communication links through optical fibers. Weight saving and Electromagnetic Interference withstanding requirements have led to the need of a reliable solution to improve existing avionics high speed buses (e.g. AFDX) up to 1Gbps over 100m. To predict and optimize the performance of the link, the physical behavior of the VCSEL must be well understood. First, a theoretical study is performed through the rate equations adapted to VCSEL in large signal modulation. Averaged turn-on delays and oscillation effects are analytically computed and analyzed for different values of the on- and off state currents. This will affect the eye pattern, timing jitter and Bit Error Rate (BER) of the signal that must remain within IEEE 802.3 standard limits. In particular, the off-state current is minimized below the threshold to allow the highest possible Extinction Ratio. At this level, the spontaneous emission is dominating and leads to significant turn-on delay, turn-on jitter and bit pattern effects. Also, the transverse multimode behavior of VCSELs, caused by Spatial Hole Burning leads to some dispersion in the fiber and degradation of BER. VCSEL to Multimode Fiber coupling model is provided for prediction and optimization of modal dispersion. Lastly, turn-on delay measurements are performed on a real mock-up and results are compared with calculations.

  7. A 1550-nm all-optical VCSEL-to-VCSEL wavelength conversion of a 8.5-Gb/s data signal and transmission over a 24.7-km fibre

    Science.gov (United States)

    Boiyo, D. Kiboi; Isoe, G. M.; Gamatham, R. R. G.; Leitch, A. W. R.; Gibbon, T. B.

    2016-02-01

    For the first time, we demonstrate, VCSEL-to-VCSEL wavelength conversion within the low attenuation 1550 nm window, including transmission over fibre and bit error rate (BER) performance characterization. We experimentally demonstrate a low injection power optical wavelength conversion by injecting an optical beam from a signal carrier master vertical cavity surface-emitting laser (VCSEL) into the side-mode of the slave VCSEL. This technique solves the challenge of wavelength collisions and also provides wavelength re-use in typical wavelength division multiplexed (WDM) systems. This paper, for the first time, uses two 1550 nm VCSELs with tunability range of 3 nm for a 5-9.8 mA bias current. The master VCSEL is modulated with a non-return-to-zero (NRZ) pseudo-random binary sequence (PRBS_27-1) 8.5 Gb/s data. A data conversion penalty of 1.1 dB is realized when a 15 dBm injection beam is used. The transmission performance of the converted wavelength from the slave VCSEL is evaluated using BER measurement at a 10-9 threshold. A 0.5 dB transmission penalty of the converted wavelength data is realized in an 8.5 Gb/s transmission over 24.7 km. This work is vital for optical fibre systems that may require wavelength switching for transmission of data signals.

  8. Reconfigurable high-speed optical fibre networks: Optical wavelength conversion and switching using VCSELs to eliminate channel collisions

    Science.gov (United States)

    Boiyo, Duncan Kiboi; Chabata, T. V.; Kipnoo, E. K. Rotich; Gamatham, R. R. G.; Leitch, A. W. R.; Gibbon, T. B.

    2017-01-01

    We experimentally provide an alternative solution to channel collisions through up-wavelength conversion and switching by using vertical cavity surface-emitting lasers (VCSELs). This has been achieved by utilizing purely optical wavelength conversion on VCSELs at the low attenuation, 1550 nm transmission window. The corresponding transmission and bit error-rate (BER) performance evaluation is also presented. In this paper, two 1550 nm VCSELs with 50-150 GHz channel spacing are modulated with a 10 Gb/s NRZ PRBS 27-1 data and their interferences investigated. A channel interference penalty range of 0.15-1.63 dB is incurred for 150-50 GHz channel spacing without transmission. To avoid channel collisions and to minimize high interference penalties, the transmitting VCSEL with data is injected into the side-mode of a slave VCSEL to obtain a new up converted wavelength. A 16 dB extinction ratio of the incoming wavelength is achieved when a 15 dBm transmitting beam is injected into the side-mode of a -4.5 dBm slave VCSEL. At 8.5 Gb/s, a 1.1 dB conversion and a 0.5 dB transmission penalties are realized when the converted wavelength is transmitted over a 24.7 km G.655 fibre. This work offers a low-cost, effective wavelength conversion and channel switching to reduce channel collision probability by reconfiguring channels at the node of networks.

  9. High reflectivity YDH/SiO2 distributed Bragg reflector for UV-C wavelength regime

    KAUST Repository

    Alias, Mohd Sharizal

    2018-02-15

    A distributed Bragg reflector (DBR) composed of Y2O3-doped HfO2 (YDH)/SiO2 layers with high reflectivity spectrum centered at a wavelength of ~240 nm is deposited using radio-frequency magnetron sputtering. Before the DBR deposition, optical properties for a single layer of YDH, SiO2, and HfO2 thin films were studied using spectroscopic ellipsometry and spectrophotometry. To investigate the performance of YDH as a material for the high refractive index layer in the DBR, a comparison of its optical properties was made with HfO2 thin films. Due to larger optical bandgap, the YDH thin films demonstrated higher transparency, lower extinction coefficient, and lower absorption coefficient in the UV-C regime (especially for wavelengths below 250 nm) compared to the HfO2 thin films. The deposited YDH/SiO2 DBR consisting of 15 periods achieved a reflectivity higher than 99.9% at the wavelength of ~240 nm with a stopband of ~50 nm. The high reflectivity and broad stopband of YDH/SiO2 DBRs will enable further advancement of various photonic devices such as vertical-cavity surface-emitting lasers, resonant-cavity light-emitting diodes, and resonant-cavity photodetectors operating in the UV-C wavelength regime.

  10. Integrated Micro-Optical Fluorescence Detection System for Microfluidic Electrochromatography

    International Nuclear Information System (INIS)

    ALLERMAN, ANDREW A.; ARNOLD, DON W.; ASBILL, RANDOLPH E.; BAILEY, CHRISTOPHER G.; CARTER, TONY RAY; KEMME, SHANALYN A.; MATZKE, CAROLYN M.; SAMORA, SALLY; SWEATT, WILLIAM C.; WARREN, MIAL E.; WENDT, JOEL R.

    1999-01-01

    The authors describe the design and microfabrication of an extremely compact optical system as a key element in an integrated capillary-channel electrochromatograph with laser induced fluorescence detection. The optical design uses substrate-mode propagation within the fused silica substrate. The optical system includes a vertical cavity surface-emitting laser (VCSEL) array, two high performance microlenses and a commercial photodetector. The microlenses are multilevel diffractive optics patterned by electron beam lithography and etched by reactive ion etching in fused silica. Two generations of optical subsystems are described. The first generation design is integrated directly onto the capillary channel-containing substrate with a 6 mm separation between the VCSEL and photodetector. The second generation design separates the optical system onto its own module and the source to detector length is further compressed to 3.5 mm. The systems are designed for indirect fluorescence detection using infrared dyes. The first generation design has been tested with a 750 nm VCSEL exciting a 10(sup -4) M solution of CY-7 dye. The observed signal-to-noise ratio of better than 100:1 demonstrates that the background signal from scattered pump light is low despite the compact size of the optical system and meets the system sensitivity requirements

  11. Time skewing and amplitude nonlinearity mitigation by feedback equalization for 56 Gbps VCSEL-based PAM-4 links

    Science.gov (United States)

    You, Yue; Zhang, Wenjia; Sun, Lin; Du, Jiangbing; Liang, Chenyu; Yang, Fan; He, Zuyuan

    2018-03-01

    The vertical cavity surface emitting laser (VCSEL)-based multimode optical transceivers enabled by pulse amplitude modulation (PAM)-4 will be commercialized in near future to meet the 400-Gbps standard short reach optical interconnects. It is still challenging to achieve over 56/112-Gbps with the multilevel signaling as the multimode property of the device and link would introduce the nonlinear temporal response for the different levels. In this work, we scrutinize the distortions that relates to the multilevel feature of PAM-4 modulation, and propose an effective feedback equalization scheme for 56-Gbps VCSEL-based PAM-4 optical interconnects system to mitigate the distortions caused by eye timing-skew and nonlinear power-dependent noise. Level redistribution at Tx side is theoretically modeled and constructed to achieve equivalent symbol error ratios (SERs) of four levels and improved BER performance. The cause of the eye skewing and the mitigation approach are also simulated at 100-Gbps and experimentally investigated at 56-Gbps. The results indicate more than 2-dB power penalty improvement has been achieved by using such a distortion aware equalizer.

  12. Advances and new functions of VCSEL photonics

    Science.gov (United States)

    Koyama, Fumio

    2014-11-01

    A vertical cavity surface emitting laser (VCSEL) was born in Japan. The 37 years' research and developments opened up various applications including datacom, sensors, optical interconnects, spectroscopy, optical storages, printers, laser displays, laser radar, atomic clock and high power sources. A lot of unique features have been already proven, such as low power consumption, a wafer level testing and so on. The market of VCSELs has been growing up rapidly and they are now key devices in local area networks based on multi-mode optical fibers. Optical interconnections in data centers and supercomputers are attracting much interest. In this paper, the advances on VCSEL photonics will be reviewed. We present the high-speed modulation of VCSELs based on a coupled cavity structure. For further increase in transmission capacity per fiber, the wavelength engineering of VCSEL arrays is discussed, which includes the wavelength stabilization and wavelength tuning based on a micro-machined cantilever structure. We also address a lateral integration platform and new functions, including high-resolution beam scanner, vortex beam creation and large-port free space wavelength selective switch with a Bragg reflector waveguide.

  13. Optical Breath Gas Sensor for Extravehicular Activity Application

    Science.gov (United States)

    Wood, William R.; Casias, Miguel E.; Vakhtin, Andrei B.; Pilgrim, Jeffrey S.; Chullen, Cinda; Falconi, Eric A.; McMillin, Summer

    2013-01-01

    The function of the infrared gas transducer used during extravehicular activity in the current space suit is to measure and report the concentration of carbon dioxide (CO2) in the ventilation loop. The next generation portable life support system (PLSS) requires next generation CO2 sensing technology with performance beyond that presently in use on the Space Shuttle/International Space Station extravehicular mobility unit (EMU). Accommodation within space suits demands that optical sensors meet stringent size, weight, and power requirements. A laser diode spectrometer based on wavelength modulation spectroscopy is being developed for this purpose by Vista Photonics, Inc. Two prototype devices were delivered to NASA Johnson Space Center (JSC) in September 2011. The sensors incorporate a laser diode-based CO2 channel that also includes an incidental water vapor (humidity) measurement and a separate oxygen channel using a vertical cavity surface emitting laser. Both prototypes are controlled digitally with a field-programmable gate array/microcontroller architecture. The present development extends and upgrades the earlier hardware to the Advanced PLSS 2.0 test article being constructed and tested at JSC. Various improvements to the electronics and gas sampling are being advanced by this project. The combination of low power electronics with the performance of a long wavelength laser spectrometer enables multi-gas sensors with significantly increased performance over that presently offered in the EMU.

  14. Low Power Greenhouse Gas Sensors for Unmanned Aerial Vehicles

    Directory of Open Access Journals (Sweden)

    David J. Lary

    2012-05-01

    Full Text Available We demonstrate compact, low power, lightweight laser-based sensors for measuring trace gas species in the atmosphere designed specifically for electronic unmanned aerial vehicle (UAV platforms. The sensors utilize non-intrusive optical sensing techniques to measure atmospheric greenhouse gas concentrations with unprecedented vertical and horizontal resolution (~1 m within the planetary boundary layer. The sensors are developed to measure greenhouse gas species including carbon dioxide, water vapor and methane in the atmosphere. Key innovations are the coupling of very low power vertical cavity surface emitting lasers (VCSELs to low power drive electronics and sensitive multi-harmonic wavelength modulation spectroscopic techniques. The overall mass of each sensor is between 1–2 kg including batteries and each one consumes less than 2 W of electrical power. In the initial field testing, the sensors flew successfully onboard a T-Rex Align 700E robotic helicopter and showed a precision of 1% or less for all three trace gas species. The sensors are battery operated and capable of fully automated operation for long periods of time in diverse sensing environments. Laser-based trace gas sensors for UAVs allow for high spatial mapping of local greenhouse gas concentrations in the atmospheric boundary layer where land/atmosphere fluxes occur. The high-precision sensors, coupled to the ease-of-deployment and cost effectiveness of UAVs, provide unprecedented measurement capabilities that are not possible with existing satellite-based and suborbital aircraft platforms.

  15. Communication links for fusion reactor maintenance operations

    International Nuclear Information System (INIS)

    Van Uffelen, M.

    2005-01-01

    Different architectures are envisaged for data transmission with fibre optic links in a radiation environment, as proposed in literature for both space and high energy physics applications. Their needs and constraints differ from those encountered for maintenance tasks in the future ITER environment, not only in terms of temperature and radiation levels, but also with respect to transmission speed requirements. Our approach attempts to limit the use of radiation-sensitive electronics for transmission of both digital and/or analogue data to the control room, using glass fibres as transport medium. We therefore assessed the radiation behaviour of a cost-effective fibre optic transmitter at 850 nm, consisting of a PWM (pulse width modulator), a radiation tolerant current driver (previously developed at SCK-CEN) and a VCSEL (Vertical-Cavity Surface Emitting Laser assembly, up to 10 MGy at 60 degrees Celsius. The PWM enables to transform an analogue sensor signal into a pseudo numerical signal, with a pulse width proportional to the incoming signal. The main objective of this task is to contribute to the major design of the maintenance equipment and strategy needed for the remote replacement of the divertor system in the future ITER fusion reactor, with particular attention to the implications of radiation hardening rules and recommendations. Next to the radiation assessment studies of remote handling tools, including actuators and sensors, we also develop radiation tolerant communication links with multiplexing capabilities

  16. Investigation and experimental validation of the contribution of optical interconnects in the SYMPHONIE massively parallel computer

    International Nuclear Information System (INIS)

    Scheer, Patrick

    1998-01-01

    Progress in microelectronics lead to electronic circuits which are increasingly integrated, with an operating frequency and an inputs/outputs count larger than the ones supported by printed circuit board and back-plane technologies. As a result, distributed systems with several boards cannot fully exploit the performance of integrated circuits. In synchronous parallel computers, the situation is worsen since the overall system performances rely on the efficiency of electrical interconnects between the integrated circuits which include the processing elements (PE). The study of a real parallel computer named SYMPHONIE shows for instance that the system operating frequency is far smaller than the capabilities of the microelectronics technology used for the PE implementation. Optical interconnections may cancel these limitations by providing more efficient connections between the PE. Especially, free-space optical interconnections based on vertical-cavity surface-emitting lasers (VCSEL), micro-lens and PIN photodiodes are compatible with the required features of the PE communications. Zero bias modulation of VCSEL with CMOS-compatible digital signals is studied and experimentally demonstrated. A model of the propagation of truncated gaussian beams through micro-lenses is developed. It is then used to optimise the geometry of the detection areas. A dedicated mechanical system is also proposed and implemented for integrating free-space optical interconnects in a standard electronic environment, representative of the one of parallel computer systems. A specially designed demonstrator provides the experimental validation of the above physical concepts. (author) [fr

  17. Noise induced stabilization of chaotic free-running laser diode

    Energy Technology Data Exchange (ETDEWEB)

    Virte, Martin, E-mail: mvirte@b-phot.org [Brussels Photonics Team, Department of Applied Physics and Photonics, Vrije Universiteit Brussel, Pleinlaan 2, 1050 Brussel (Belgium)

    2016-05-15

    In this paper, we investigate theoretically the stabilization of a free-running vertical-cavity surface-emitting laser exhibiting polarization chaos dynamics. We report the existence of a boundary isolating the chaotic attractor on one side and a steady-state on the other side and identify the unstable periodic orbit playing the role of separatrix. In addition, we highlight a small range of parameters where the chaotic attractor passes through this boundary, and therefore where chaos only appears as a transient behaviour. Then, including the effect of spontaneous emission noise in the laser, we demonstrate that, for realistic levels of noise, the system is systematically pushed over the separating solution. As a result, we show that the chaotic dynamics cannot be sustained unless the steady-state on the other side of the separatrix becomes unstable. Finally, we link the stability of this steady-state to a small value of the birefringence in the laser cavity and discuss the significance of this result on future experimental work.

  18. Single-mode electrically pumped GaSb-based VCSELs emitting continuous-wave at 2.4 and 2.6 μm

    International Nuclear Information System (INIS)

    Bachmann, Alexander; Arafin, Shamsul; Kashani-Shirazi, Kaveh

    2009-01-01

    Vertical-cavity surface-emitting lasers (VCSELs) are perfect light sources for spectroscopic applications, where properties such as continuous-wave (cw) operation, single-mode emission, high lifetime and often low power consumption are crucial. For applications such as tunable diode laser absorption spectroscopy (TDLAS), there is a growing interest in laser devices emitting in the near- to mid-infrared wavelength range, where many environmentally and technologically important gases show strong absorption lines. The (AlGaIn)(AsSb) material system based on GaSb is the material of choice for covering the 2.0-3.3 μm range. In this paper, we report on electrically pumped single-mode VCSELs with emission wavelengths of 2.4 and 2.6 μm, operating cw at room temperature and beyond. By (electro-) thermal tuning, the emission wavelength can be tuned mode-hop free over a range of several nanometers. In addition, low threshold currents of several milliamperes promise mobile application. In the devices, a structured buried tunnel junction with subsequent overgrowth has been used in order to achieve efficient current confinement, reduced optical losses and increased electrical conductivity. Furthermore, strong optical confinement is introduced in the lasers due to laterally differing cavity lengths.

  19. Using a Single VCSEL Source Employing OFDM Downstream Signal and Remodulated OOK Upstream Signal for Bi-directional Visible Light Communications.

    Science.gov (United States)

    Yeh, Chien-Hung; Wei, Liang-Yu; Chow, Chi-Wai

    2017-11-20

    In this work, we propose and demonstrate for the first time up to our knowledge, using a 682 nm visible vertical-cavity surface-emitting laser (VCSEL) applied in a bi-directional wavelength remodulated VLC system with a free space transmission distance of 3 m. To achieve a high VLC downstream traffic, spectral efficient orthogonal-frequency-division-multiplexing quadrature-amplitude-modulation (OFDM-QAM) with bit and power loading algorithms are applied on the VCSEL in the central office (CO). The OFDM downstream wavelength is remodulated by an acousto-optic modulator (AOM) with OOK modulation to produce the upstream traffic in the client side. Hence, only a single VCSEL laser is needed for the proposed bi-directional VLC system, achieving 10.6 Gbit/s OFDM downstream and 2 Mbit/s remodulated OOK upstream simultaneously. For the proposed system, as a single laser source with wavelength remodulation is used, the laser wavelength and temperature managements at the client side are not needed; and the whole system could be cost effective and energy efficient.

  20. The application of cost-effective lasers in coherent UDWDM-OFDM-PON aided by effective phase noise suppression methods.

    Science.gov (United States)

    Liu, Yue; Yang, Chuanchuan; Yang, Feng; Li, Hongbin

    2014-03-24

    Digital coherent passive optical network (PON), especially the coherent orthogonal frequency division multiplexing PON (OFDM-PON), is a strong candidate for the 2nd-stage-next-generation PON (NG-PON2). As is known, OFDM is very sensitive to the laser phase noise which severely limits the application of the cost-effective distributed feedback (DFB) lasers and more energy-efficient vertical cavity surface emitting lasers (VCSEL) in the coherent OFDM-PON. The current long-reach coherent OFDM-PON experiments always choose the expensive external cavity laser (ECL) as the optical source for its narrow linewidth (usuallyOFDM-PON and study the possibility of the application of the DFB lasers and VCSEL in coherent OFDM-PON. A typical long-reach coherent ultra dense wavelength division multiplexing (UDWDM) OFDM-PON has been set up. The numerical results prove that the OBE method can stand severe phase noise of the lasers in this architecture and the DFB lasers as well as VCSEL can be used in coherent OFDM-PON. In this paper, we have also analyzed the performance of the RF-pilot-aided (RFP) phase noise suppression method in coherent OFDM-PON.

  1. Continuous wave and modulation performance of 1550nm band wafer-fused VCSELs with MBE-grown InP-based active region and GaAs-based DBRs

    Science.gov (United States)

    Babichev, A. V.; Karachinsky, L. Ya.; Novikov, I. I.; Gladyshev, A. G.; Mikhailov, S.; Iakovlev, V.; Sirbu, A.; Stepniak, G.; Chorchos, L.; Turkiewicz, J. P.; Agustin, M.; Ledentsov, N. N.; Voropaev, K. O.; Ionov, A. S.; Egorov, A. Yu.

    2017-02-01

    We report for the first time on wafer-fused InGaAs-InP/AlGaAs-GaAs 1550 nm vertical-cavity surface-emitting lasers (VCSELs) incorporating a InAlGaAs/InP MQW active region with re-grown tunnel junction sandwiched between top and bottom undoped AlGaAs/GaAs distributed Bragg reflectors (DBRs) all grown by molecular beam epitaxy. InP-based active region includes seven compressively strained quantum wells (2.8 nm) optimized to provide high differential gain. Devices with this active region demonstrate lasing threshold current 2 mW in the temperature range of 10-70°C. The wall-plug efficiency (WPE) value-reaches 20 %. Lasing spectra show single mode CW operation with a longitudinal side mode suppression ratio (SMSR) up to 45 dB at > 2 mW output power. Small signal modulation response measurements show a 3-dB modulation bandwidth of 9 GHz at pump current of 10 mA and a D-factor value of 3 GHz/(mA)1/2. Open-eye diagram at 30 Gb/s of standard NRZ is demonstrated. Achieved CW and modulation performance is quite sufficient for fiber to the home (FTTH) applications where very large volumes of low-cost lasers are required.

  2. Long ranging swept-source optical coherence tomography-based angiography outperforms its spectral-domain counterpart in imaging human skin microcirculations

    Science.gov (United States)

    Xu, Jingjiang; Song, Shaozhen; Men, Shaojie; Wang, Ruikang K.

    2017-11-01

    There is an increasing demand for imaging tools in clinical dermatology that can perform in vivo wide-field morphological and functional examination from surface to deep tissue regions at various skin sites of the human body. The conventional spectral-domain optical coherence tomography-based angiography (SD-OCTA) system is difficult to meet these requirements due to its fundamental limitations of the sensitivity roll-off, imaging range as well as imaging speed. To mitigate these issues, we demonstrate a swept-source OCTA (SS-OCTA) system by employing a swept source based on a vertical cavity surface-emitting laser. A series of comparisons between SS-OCTA and SD-OCTA are conducted. Benefiting from the high system sensitivity, long imaging range, and superior roll-off performance, the SS-OCTA system is demonstrated with better performance in imaging human skin than the SD-OCTA system. We show that the SS-OCTA permits remarkable deep visualization of both structure and vasculature (up to ˜2 mm penetration) with wide field of view capability (up to 18×18 mm2), enabling a more comprehensive assessment of the morphological features as well as functional blood vessel networks from the superficial epidermal to deep dermal layers. It is expected that the advantages of the SS-OCTA system will provide a ground for clinical translation, benefiting the existing dermatological practice.

  3. Electrical addressing and temporal tweezing of localized pulses in passively mode-locked semiconductor lasers

    Science.gov (United States)

    Javaloyes, J.; Camelin, P.; Marconi, M.; Giudici, M.

    2017-08-01

    This work presents an overview of a combined experimental and theoretical analysis on the manipulation of temporal localized structures (LSs) found in passively Vertical-Cavity Surface-Emitting Lasers coupled to resonant saturable absorber mirrors. We show that the pumping current is a convenient parameter for manipulating the temporal Localized Structures, also called localized pulses. While short electrical pulses can be used for writing and erasing individual LSs, we demonstrate that a current modulation introduces a temporally evolving parameter landscape allowing to control the position and the dynamics of LSs. We show that the localized pulses drifting speed in this landscape depends almost exclusively on the local parameter value instead of depending on the landscape gradient, as shown in quasi-instantaneous media. This experimental observation is theoretically explained by the causal response time of the semiconductor carriers that occurs on an finite timescale and breaks the parity invariance along the cavity, thus leading to a new paradigm for temporal tweezing of localized pulses. Different modulation waveforms are applied for describing exhaustively this paradigm. Starting from a generic model of passive mode-locking based upon delay differential equations, we deduce the effective equations of motion for these LSs in a time-dependent current landscape.

  4. Optical interconnects based on VCSELs and low-loss silicon photonics

    Science.gov (United States)

    Aalto, Timo; Harjanne, Mikko; Karppinen, Mikko; Cherchi, Matteo; Sitomaniemi, Aila; Ollila, Jyrki; Malacarne, Antonio; Neumeyr, Christian

    2018-02-01

    Silicon photonics with micron-scale Si waveguides offers most of the benefits of submicron SOI technology while avoiding most of its limitations. In particular, thick silicon-on-insulator (SOI) waveguides offer 0.1 dB/cm propagation loss, polarization independency, broadband single-mode (SM) operation from 1.2 to >4 µm wavelength and ability to transmit high optical powers (>1 W). Here we describe the feasibility of Thick-SOI technology for advanced optical interconnects. With 12 μm SOI waveguides we demonstrate efficient coupling between standard single-mode fibers, vertical-cavity surface-emitting lasers (VCSELs) and photodetectors (PDs), as well as wavelength multiplexing in small footprint. Discrete VCSELs and PDs already support 28 Gb/s on-off keying (OOK), which shows a path towards 50-100 Gb/s bandwidth per wavelength by using more advanced modulation formats like PAM4. Directly modulated VCSELs enable very power-efficient optical interconnects for up to 40 km distance. Furthermore, with 3 μm SOI waveguides we demonstrate extremely dense and low-loss integration of numerous optical functions, such as multiplexers, filters, switches and delay lines. Also polarization independent and athermal operation is demonstrated. The latter is achieved by using short polymer waveguides to compensate for the thermo-optic effect in silicon. New concepts for isolator integration and polarization rotation are also explained.

  5. Ultrahigh speed endoscopic optical coherence tomography using micromotor imaging catheter and VCSEL technology.

    Science.gov (United States)

    Tsai, Tsung-Han; Potsaid, Benjamin; Tao, Yuankai K; Jayaraman, Vijaysekhar; Jiang, James; Heim, Peter J S; Kraus, Martin F; Zhou, Chao; Hornegger, Joachim; Mashimo, Hiroshi; Cable, Alex E; Fujimoto, James G

    2013-07-01

    We developed a micromotor based miniature catheter with an outer diameter of 3.2 mm for ultrahigh speed endoscopic swept source optical coherence tomography (OCT) using a vertical cavity surface-emitting laser (VCSEL) at a 1 MHz axial scan rate. The micromotor can rotate a micro-prism at several hundred frames per second with less than 5 V drive voltage to provide fast and stable scanning, which is not sensitive to the bending of the catheter. The side-viewing probe can be pulled back to acquire a three-dimensional (3D) data set covering a large area on the specimen. The VCSEL provides a high axial scan rate to support dense sampling under high frame rate operation. Using a high speed data acquisition system, in vivo 3D-OCT imaging in the rabbit GI tract and ex vivo imaging of a human colon specimen with 8 μm axial resolution, 8 μm lateral resolution and 1.2 mm depth range in tissue at a frame rate of 400 fps was demonstrated.

  6. Ultrahigh speed endoscopic swept source optical coherence tomography using a VCSEL light source and micromotor catheter

    Science.gov (United States)

    Tsai, Tsung-Han; Ahsen, Osman O.; Lee, Hsiang-Chieh; Liang, Kaicheng; Giacomelli, Michael G.; Potsaid, Benjamin M.; Tao, Yuankai K.; Jayaraman, Vijaysekhar; Kraus, Martin F.; Hornegger, Joachim; Figueiredo, Marisa; Huang, Qin; Mashimo, Hiroshi; Cable, Alex E.; Fujimoto, James G.

    2014-03-01

    We developed an ultrahigh speed endoscopic swept source optical coherence tomography (OCT) system for clinical gastroenterology using a vertical-cavity surface-emitting laser (VCSEL) and micromotor based imaging catheter, which provided an imaging speed of 600 kHz axial scan rate and 8 μm axial resolution in tissue. The micromotor catheter was 3.2 mm in diameter and could be introduced through the 3.7 mm accessory port of an endoscope. Imaging was performed at 400 frames per second with an 8 μm spot size using a pullback to generate volumetric data over 16 mm with a pixel spacing of 5 μm in the longitudinal direction. Three-dimensional OCT (3D-OCT) imaging was performed in patients with a cross section of pathologies undergoing standard upper and lower endoscopy at the Veterans Affairs Boston Healthcare System (VABHS). Patients with Barrett's esophagus, dysplasia, and inflammatory bowel disease were imaged. The use of distally actuated imaging catheters allowed OCT imaging with more flexibility such as volumetric imaging in the terminal ileum and the assessment of the hiatal hernia using retroflex imaging. The high rotational stability of the micromotor enabled 3D volumetric imaging with micron scale volumetric accuracy for both en face and cross-sectional imaging. The ability to perform 3D OCT imaging in the GI tract with microscopic accuracy should enable a wide range of studies to investigate the ability of OCT to detect pathology as well as assess treatment response.

  7. Depth-encoded all-fiber swept source polarization sensitive OCT

    Science.gov (United States)

    Wang, Zhao; Lee, Hsiang-Chieh; Ahsen, Osman Oguz; Lee, ByungKun; Choi, WooJhon; Potsaid, Benjamin; Liu, Jonathan; Jayaraman, Vijaysekhar; Cable, Alex; Kraus, Martin F.; Liang, Kaicheng; Hornegger, Joachim; Fujimoto, James G.

    2014-01-01

    Polarization sensitive optical coherence tomography (PS-OCT) is a functional extension of conventional OCT and can assess depth-resolved tissue birefringence in addition to intensity. Most existing PS-OCT systems are relatively complex and their clinical translation remains difficult. We present a simple and robust all-fiber PS-OCT system based on swept source technology and polarization depth-encoding. Polarization multiplexing was achieved using a polarization maintaining fiber. Polarization sensitive signals were detected using fiber based polarization beam splitters and polarization controllers were used to remove the polarization ambiguity. A simplified post-processing algorithm was proposed for speckle noise reduction relaxing the demand for phase stability. We demonstrated systems design for both ophthalmic and catheter-based PS-OCT. For ophthalmic imaging, we used an optical clock frequency doubling method to extend the imaging range of a commercially available short cavity light source to improve polarization depth-encoding. For catheter based imaging, we demonstrated 200 kHz PS-OCT imaging using a MEMS-tunable vertical cavity surface emitting laser (VCSEL) and a high speed micromotor imaging catheter. The system was demonstrated in human retina, finger and lip imaging, as well as ex vivo swine esophagus and cardiovascular imaging. The all-fiber PS-OCT is easier to implement and maintain compared to previous PS-OCT systems and can be more easily translated to clinical applications due to its robust design. PMID:25401008

  8. Ultrahigh speed endoscopic optical coherence tomography for gastroenterology.

    Science.gov (United States)

    Tsai, Tsung-Han; Lee, Hsiang-Chieh; Ahsen, Osman O; Liang, Kaicheng; Giacomelli, Michael G; Potsaid, Benjamin M; Tao, Yuankai K; Jayaraman, Vijaysekhar; Figueiredo, Marisa; Huang, Qin; Cable, Alex E; Fujimoto, James; Mashimo, Hiroshi

    2014-12-01

    We describe an ultrahigh speed endoscopic swept source optical coherence tomography (OCT) system for clinical gastroenterology using a vertical-cavity surface-emitting laser (VCSEL) and micromotor imaging catheter. The system had a 600 kHz axial scan rate and 8 µm axial resolution in tissue. Imaging was performed with a 3.2 mm diameter imaging catheter at 400 frames per second with a 12 µm spot size. Three-dimensional OCT (3D-OCT) imaging was performed in patients with a cross section of pathologies undergoing upper and lower endoscopy. The use of distally actuated imaging catheters enabled OCT imaging with more flexibility, such as volumetric imaging in the small intestine and the assessment of hiatal hernia using retroflex imaging. The high rotational scanning stability of the micromotor enabled 3D volumetric imaging with micron scale volumetric accuracy for both en face OCT and cross-sectional imaging, as well as OCT angiography (OCTA) for 3D visualization of subsurface microvasculature. The ability to perform both structural and functional 3D OCT imaging in the GI tract with microscopic accuracy should enable a wide range of studies and enhance the sensitivity and specificity of OCT for detecting pathology.

  9. Flip-chip bonded optoelectronic integration based on ultrathin silicon (UTSi) CMOS

    Science.gov (United States)

    Hong, Sunkwang; Ho, Tawei; Zhang, Liping; Sawchuk, Alexander A.

    2003-06-01

    We describe the design and test of flip-chip bonded optoelectronic CMOS devices based on Peregrine Semiconductor's 0.5 micron Ultra-Thin Silicon on sapphire (UTSi) technology. The UTSi process eliminates the substrate leakage that typically results in crosstalk and reduces parasitic capacitance to the substrate, providing many benefits compared to bulk silicon CMOS. The low-loss synthetic sapphire substrate is optically transparent and has a coefficient of thermal expansion suitable for flip-chip bonding of vertical cavity surface emitting lasers (VCSELs) and detectors. We have designed two different UTSi CMOS chips. One contains a flip-chip bonded 1 x 4 photodiode array, a receiver array, a double edge triggered D-flip flop-based 2047-pattern pseudo random bit stream (PRBS) generator and a quadrature-phase LC-voltage controlled oscillator (VCO). The other chip contains a flip-chip bonded 1 x 4 VCSEL array, a driver array based on high-speed low-voltage differential signals (LVDS) and a full-balanced differential LC-VCO. Each VCSEL driver and receiver has individual input and bias voltage adjustments. Each UTSi chip is mounted on different printed circuit boards (PCBs) which have holes with about 1 mm radius for optical output and input paths through the sapphire substrate. We discuss preliminary testing of these chips.

  10. Two-dimensional optoelectronic interconnect-processor and its operational bit error rate

    Science.gov (United States)

    Liu, J. Jiang; Gollsneider, Brian; Chang, Wayne H.; Carhart, Gary W.; Vorontsov, Mikhail A.; Simonis, George J.; Shoop, Barry L.

    2004-10-01

    Two-dimensional (2-D) multi-channel 8x8 optical interconnect and processor system were designed and developed using complementary metal-oxide-semiconductor (CMOS) driven 850-nm vertical-cavity surface-emitting laser (VCSEL) arrays and the photodetector (PD) arrays with corresponding wavelengths. We performed operation and bit-error-rate (BER) analysis on this free-space integrated 8x8 VCSEL optical interconnects driven by silicon-on-sapphire (SOS) circuits. Pseudo-random bit stream (PRBS) data sequence was used in operation of the interconnects. Eye diagrams were measured from individual channels and analyzed using a digital oscilloscope at data rates from 155 Mb/s to 1.5 Gb/s. Using a statistical model of Gaussian distribution for the random noise in the transmission, we developed a method to compute the BER instantaneously with the digital eye-diagrams. Direct measurements on this interconnects were also taken on a standard BER tester for verification. We found that the results of two methods were in the same order and within 50% accuracy. The integrated interconnects were investigated in an optoelectronic processing architecture of digital halftoning image processor. Error diffusion networks implemented by the inherently parallel nature of photonics promise to provide high quality digital halftoned images.

  11. Room temperature continuous wave mid-infrared VCSEL operating at 3.35 μm

    Science.gov (United States)

    Jayaraman, V.; Segal, S.; Lascola, K.; Burgner, C.; Towner, F.; Cazabat, A.; Cole, G. D.; Follman, D.; Heu, P.; Deutsch, C.

    2018-02-01

    Tunable vertical cavity surface emitting lasers (VCSELs) offer a potentially low cost tunable optical source in the 3-5 μm range that will enable commercial spectroscopic sensing of numerous environmentally and industrially important gases including methane, ethane, nitrous oxide, and carbon monoxide. Thus far, achieving room temperature continuous wave (RTCW) VCSEL operation at wavelengths beyond 3 μm has remained an elusive goal. In this paper, we introduce a new device structure that has enabled RTCW VCSEL operation near the methane absorption lines at 3.35 μm. This device structure employs two GaAs/AlGaAs mirrors wafer-bonded to an optically pumped active region comprising compressively strained type-I InGaAsSb quantum wells grown on a GaSb substrate. This substrate is removed in processing, as is one of the GaAs mirror substrates. The VCSEL structure is optically pumped at room temperature with a CW 1550 nm laser through the GaAs substrate, while the emitted 3.3 μm light is captured out of the top of the device. Power and spectrum shape measured as a function of pump power exhibit clear threshold behavior and robust singlemode spectra.

  12. Onset of surface stimulated emission at 260 nm from AlGaN multiple quantum wells

    KAUST Repository

    Li, Xiaohang

    2015-12-14

    We demonstrated onset of deep-ultraviolet (DUV) surface stimulated emission (SE) from c-plane AlGaNmultiple-quantum well(MQW)heterostructuresgrown on a sapphire substrate by optical pumping at room temperature. The onset of SE became observable at a pumping power density of 630 kW/cm2. Spectral deconvolution revealed superposition of a linearly amplified spontaneous emission peak at λ ∼ 257.0 nm with a full width at half maximum (FWHM) of ∼12 nm and a superlinearly amplified SE peak at λ ∼ 260 nm with a narrow FWHM of less than 2 nm. In particular, the wavelength of ∼260 nm is the shortest wavelength of surface SE from III-nitride MQWheterostructures to date. Atomic force microscopy and scanning transmission electron microscopy measurements were employed to investigate the material and structural quality of the AlGaNheterostructures, showing smooth surface and sharp layer interfaces. This study offers promising results for AlGaNheterostructuresgrown on sapphire substrates for the development of DUV vertical cavity surface emitting lasers(VCSELs).

  13. A 4×8-Gbps VCSEL array driver ASIC and integration with a custom array transmitter module for the LHC front-end transmission

    Energy Technology Data Exchange (ETDEWEB)

    Guo, Di [Department of Physics, Southern Methodist University, Dallas, TX 75275 (United States); State Key Laboratory of Particle Detection and Electronics, University of Science and Technology of China, Hefei Anhui 230026 (China); Liu, Chonghan [Department of Physics, Southern Methodist University, Dallas, TX 75275 (United States); Chen, Jinghong [Department of Electrical and Computer Engineering, University of Houston, Houston, TX 77004 (United States); Chramowicz, John [Real-Time Systems Engineering Department, Fermi National Laboratory, Batavia, IL 60510 (United States); Gong, Datao [Department of Physics, Southern Methodist University, Dallas, TX 75275 (United States); He, Huiqin [Department of Physics, Southern Methodist University, Dallas, TX 75275 (United States); Shenzhen Polytechnic, Shenzhen 518055 (China); Hou, Suen [Institute of Physics, Academia Sinica, Nangang 11529, Taipei, Taiwan (China); Liu, Tiankuan [Department of Physics, Southern Methodist University, Dallas, TX 75275 (United States); Prosser, Alan [Real-Time Systems Engineering Department, Fermi National Laboratory, Batavia, IL 60510 (United States); Teng, Ping-Kun [Institute of Physics, Academia Sinica, Nangang 11529, Taipei, Taiwan (China); Xiang, Annie C. [Department of Physics, Southern Methodist University, Dallas, TX 75275 (United States); Xiao, Le [Department of Physics, Southern Methodist University, Dallas, TX 75275 (United States); Department of Physics, Central China Normal University, Wuhan, Hubei 430079 (China); Ye, Jingbo [Department of Physics, Southern Methodist University, Dallas, TX 75275 (United States)

    2016-09-21

    This paper describes the design, fabrication and experiment results of a 4×8-Gbps Vertical-Cavity Surface-Emitting Laser (VCSEL) array driver ASIC with the adjustable active-shunt peaking technique and the novel balanced output structure under the Silicon-on-Sapphire (SOS) process, and a custom array optical transmitter module, featuring a compact size of 10 mm×15 mm×5.3 mm. Both the array driver ASIC and the module have been fully tested after integration as a complete parallel transmitter. Optical eye diagram of each channel passes the eye mask at 8 Gbps/ch with adjacent channel working simultaneously with a power consumption of 150 mW/ch. The optical transmission of Bit-Error Rate (BER) less than 10E-12 is achieved at an aggregated data rate of 4×8-Gbps. - Highlights: • An anode-driven VCSEL Array driver ASIC with the configurable active-shunt peaking technique in pre-driving stages. • A novel full-differential balanced output structure is used to minimize the noise and crosstalk from the power. • A custom array optical transmitter module with custom low-cost reliable alignment method.

  14. Optically pumped lasing in single crystals of organometal halide perovskites prepared by cast-capping method

    Energy Technology Data Exchange (ETDEWEB)

    Nguyen, Van-Cao; Katsuki, Hiroyuki; Yanagi, Hisao, E-mail: yanagi@ms.naist.jp [Graduate School of Materials Science, Nara Institute of Science and Technology (NAIST), 8916-5 Takayama, Ikoma, Nara 630-0192 (Japan); Sasaki, Fumio [Electronics and Photonics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568 (Japan)

    2016-06-27

    A simple “cast-capping” method is adopted to prepare single-crystal perovskites of methyl ammonium lead bromide (CH{sub 3}NH{sub 3}PbBr{sub 3}). By capping a CH{sub 3}NH{sub 3}PbBr{sub 3} solution casted on one substrate with another substrate such as glass, mica, and distributed Bragg reflector (DBR), the slow evaporation of solvent enables large-size cubic crystals to grow between the two substrates. Under optical pumping, edge-emitting lasing is observed based on Fabry–Pérot resonation between parallel side facets of a strip-shaped crystal typically with a lateral cavity length of a few tens of μm. On the other hand, vertical-cavity surface-emitting lasing (VCSEL) is obtained from a planar crystal grown between two DBRs with a cavity thickness of a few μm. Simultaneous detection of those edge- and surface-emissions reveals that the threshold excitation fluence of VCSEL is higher than that of the edge-emitting lasing due to thickness gradient in the planar crystal.

  15. Ultralow-threshold electrically pumped quantum-dot photonic-crystal nanocavity laser

    Science.gov (United States)

    Ellis, Bryan; Mayer, Marie A.; Shambat, Gary; Sarmiento, Tomas; Harris, James; Haller, Eugene E.; Vučković, Jelena

    2011-05-01

    Efficient, low-threshold and compact semiconductor laser sources are under investigation for many applications in high-speed communications, information processing and optical interconnects. The best edge-emitting and vertical-cavity surface-emitting lasers have thresholds on the order of 100 µA (refs 1,2), but dissipate too much power to be practical for many applications, particularly optical interconnects. Optically pumped photonic-crystal nanocavity lasers represent the state of the art in low-threshold lasers; however, to be practical, techniques to electrically pump these structures must be developed. Here, we demonstrate a quantum-dot photonic-crystal nanocavity laser in gallium arsenide pumped by a lateral p-i-n junction formed by ion implantation. Continuous-wave lasing is observed at temperatures up to 150 K. Thresholds of only 181 nA at 50 K and 287 nA at 150 K are observed--the lowest thresholds ever observed in any type of electrically pumped laser.

  16. Semiconductor laser joint study program with Rome Laboratory

    Science.gov (United States)

    Schaff, William J.; Okeefe, Sean S.; Eastman, Lester F.

    1994-09-01

    A program to jointly study vertical-cavity surface emitting lasers (VCSEL) for high speed vertical optical interconnects (VOI) has been conducted under an ES&E between Rome Laboratory and Cornell University. Lasers were designed, grown, and fabricated at Cornell University. A VCSEL measurement laboratory has been designed, built, and utilized at Rome Laboratory. High quality VCSEL material was grown and characterized by fabricating conventional lateral cavity lasers that emitted at the design wavelength of 1.04 microns. The VCSEL's emit at 1.06 microns. Threshold currents of 16 mA at 4.8 volts were obtained for 30 microns diameter devices. Output powers of 5 mW were measured. This is 500 times higher power than from the light emitting diodes employed previously for vertical optical interconnects. A new form of compositional grading using a cosinusoidal function has been developed and is very successful for reducing diode series resistance for high speed interconnection applications. A flip-chip diamond package compatible with high speed operation of 16 VCSEL elements has been designed and characterized. A flip-chip device binding effort at Rome Laboratory was also designed and initiated. This report presents details of the one-year effort, including process recipes and results.

  17. Optical power of VCSELs stabilized to 35 ppm/°C without a TEC

    Science.gov (United States)

    Downing, John

    2015-03-01

    This paper reports a method and system comprising a light source, an electronic method, and a calibration procedure for stabilizing the optical power of vertical-cavity surface-emitting lasers (VCSELs) and laser diodes (LDs) without the use thermoelectric coolers (TECs). The system eliminates the needs for custom interference coatings, polarization adjustments, and the exact alignment required by the optical method reported in 2013 [1]. It can precisely compensate for the effects of temperature and wavelength drift on photodiode responsivity as well as changes in VCSEL beam quality and polarization angle over a 50°C temperature range. Data obtained from light sources built with single-mode polarization-locked VCSELs demonstrate that 30 ppm/°C stability can be readily obtained. The system has advantages over TECstabilized laser modules that include: 1) 90% lower relative RMS optical power and temperature sensitivity, 2) a five-fold enhancement of wall-plug efficiency, 3) less component testing and sorting, 4) lower manufacturing costs, and 5) automated calibration in batches at time of manufacture is practical. The system is ideally suited for battery-powered environmental and in-home medical monitoring applications.

  18. Microscope-Integrated Intraoperative Ultrahigh-Speed Swept-Source Optical Coherence Tomography for Widefield Retinal and Anterior Segment Imaging.

    Science.gov (United States)

    Lu, Chen D; Waheed, Nadia K; Witkin, Andre; Baumal, Caroline R; Liu, Jonathan J; Potsaid, Benjamin; Joseph, Anthony; Jayaraman, Vijaysekhar; Cable, Alex; Chan, Kinpui; Duker, Jay S; Fujimoto, James G

    2018-02-01

    To demonstrate the feasibility of retinal and anterior segment intraoperative widefield imaging using an ultrahigh-speed, swept-source optical coherence tomography (SS-OCT) surgical microscope attachment. A prototype post-objective SS-OCT using a 1,050-nm wavelength, 400 kHz A-scan rate, vertical cavity surface-emitting laser (VCSEL) light source was integrated to a commercial ophthalmic surgical microscope after the objective. Each widefield OCT data set was acquired in 3 seconds (1,000 × 1,000 A-scans, 12 × 12 mm 2 for retina and 10 × 10 mm 2 for anterior segment). Intraoperative SS-OCT was performed in 20 eyes of 20 patients. In six of seven membrane peels and five of seven rhegmatogenous retinal detachment repair surgeries, widefield retinal imaging enabled evaluation pre- and postoperatively. In all seven cataract cases, anterior imaging evaluated the integrity of the posterior lens capsule. Ultrahigh-speed SS-OCT enables widefield intraoperative viewing in the posterior and anterior eye. Widefield imaging visualizes ocular structures and pathology without requiring OCT realignment. [Ophthalmic Surg Lasers Imaging Retina. 2018;49:94-102.]. Copyright 2018, SLACK Incorporated.

  19. Onset of surface stimulated emission at 260 nm from AlGaN multiple quantum wells

    International Nuclear Information System (INIS)

    Li, Xiaohang; Xie, Hongen; Ponce, Fernando A.; Ryou, Jae-Hyun; Detchprohm, Theeradetch; Dupuis, Russell D.

    2015-01-01

    We demonstrated onset of deep-ultraviolet (DUV) surface stimulated emission (SE) from c-plane AlGaN multiple-quantum well (MQW) heterostructures grown on a sapphire substrate by optical pumping at room temperature. The onset of SE became observable at a pumping power density of 630 kW/cm 2 . Spectral deconvolution revealed superposition of a linearly amplified spontaneous emission peak at λ ∼ 257.0 nm with a full width at half maximum (FWHM) of ∼12 nm and a superlinearly amplified SE peak at λ ∼ 260 nm with a narrow FWHM of less than 2 nm. In particular, the wavelength of ∼260 nm is the shortest wavelength of surface SE from III-nitride MQW heterostructures to date. Atomic force microscopy and scanning transmission electron microscopy measurements were employed to investigate the material and structural quality of the AlGaN heterostructures, showing smooth surface and sharp layer interfaces. This study offers promising results for AlGaN heterostructures grown on sapphire substrates for the development of DUV vertical cavity surface emitting lasers (VCSELs)

  20. Characteristics of VCSELs and VCSEL arrays for optical data links

    Science.gov (United States)

    Gaw, Craig A.; Jiang, Wenbin; Lebby, Michael S.; Kiely, Philip A.; Claisse, Paul R.

    1997-05-01

    High performance, low cost, and highly reliable vertical cavity surface emitting lasers (VCSELs) have been developed and are currently being used in both parallel and serial optical interconnect applications. For example, Motorola's OPTOBUSTM parallel optical interconnect relies heavily on the unique characteristics of arrays of GaAs based VCSELs emitting at 850 nm to achieve its stringent performance goals at low cost. Representative parametric results of discrete VCSELs and VCSEL arrays will be compared, including `optical power output-current' and `current-voltage' curves, optical wall plug efficiencies, and modulation characteristics. The use of statistical parameter analysis across a wafer and subsequent parametric wafer maps has proven to be a valuable tool for maintaining control of the fabrication process. The consistency of VCSEL parameters across individual VCSEL arrays will be discussed. VCSELs are very robust devices. Life times at room ambient in excess of 3E6 hours have been reported by several groups. Degradation behavior of selected device parameters will be discussed. Failure analysis demonstrating the effect of proton implant depth on reliability will be presented. ESD damage at forward bias is shown to be process related, while ESD damage at reverse bias is shown to be material related. These VCSELs are ESD Class 1 devices.

  1. Effect of low and staggered gap quantum wells inserted in GaAs tunnel junctions

    Science.gov (United States)

    Louarn, K.; Claveau, Y.; Marigo-Lombart, L.; Fontaine, C.; Arnoult, A.; Piquemal, F.; Bounouh, A.; Cavassilas, N.; Almuneau, G.

    2018-04-01

    In this article, we investigate the impact of the insertion of either a type I InGaAs or a type II InGaAs/GaAsSb quantum well on the performances of MBE-grown GaAs tunnel junctions (TJs). The devices are designed and simulated using a quantum transport model based on the non-equilibrium Green’s function formalism and a 6-band k.p Hamiltonian. We experimentally observe significant improvements of the peak tunneling current density on both heterostructures with a 460-fold increase for a moderately doped GaAs TJ when the InGaAs QW is inserted at the junction interface, and a 3-fold improvement on a highly doped GaAs TJ integrating a type II InGaAs/GaAsSb QW. Thus, the simple insertion of staggered band lineup heterostructures enables us to reach a tunneling current well above the kA cm‑2 range, equivalent to the best achieved results for Si-doped GaAs TJs, implying very interesting potential for TJ-based components, such as multi-junction solar cells, vertical cavity surface emitting lasers and tunnel-field effect transistors.

  2. Fabrication of high performance microlenses for an integrated capillary channel electrochromatograph with fluorescence detection

    International Nuclear Information System (INIS)

    Wendt, J. R.; Warren, M. E.; Sweatt, W. C.; Bailey, C. G.; Matzke, C. M.; Arnold, D. W.; Allerman, A. A.; Carter, T. R.; Asbill, R. E.; Samora, S.

    1999-01-01

    We describe the microfabrication of an extremely compact optical system as a key element in an integrated capillary channel electrochromatograph with fluorescence detection. The optical system consists of a vertical cavity surface-emitting laser (VCSEL), two high performance microlenses, and a commercial photodetector. The microlenses are multilevel diffractive optics patterned by electron beam lithography and etched by reactive ion etching in fused silica. The design uses substrate-mode propagation within the fused silica substrate. Two generations of optical subsystems are described. The first generation design has a 6 mm optical length and is integrated directly onto the capillary channel-containing substrate. The second generation design separates the optical system onto its own substrate module and the optical path length is further compressed to 3.5 mm. The first generation design has been tested using direct fluorescence detection with a 750 nm VCSEL pumping a 10 -4 M solution of CY-7 dye. The observed signal-to-noise ratio of better than 100:1 demonstrates that the background signal from scattered pump light is low despite the compact size of the optical system and is adequate for system sensitivity requirements. (c) 1999 American Vacuum Society

  3. High-Speed, Radiation-Tolerant Laser Drivers in 0.13 $\\mu$m CMOS Technology for HEP Applications

    CERN Document Server

    AUTHOR|(CDS)2073369; Moreira, Paulo; Calvo, Daniela; De Remigis, Paolo; Olantera, Lauri; Soos, Csaba; Troska, Jan; Wyllie, Ken

    2014-01-01

    The gigabit laser driver (GBLD) and low-power GBLD (LpGBLD) are two radiation-tolerant laser drivers designed to drive laser diodes at data rates up to 4.8 Gb/s. They have been designed in the framework of the gigabit-transceiver (GBT) and versatile-link projects to provide fast optical links capable of operation in the radiation environment of future high-luminosity high-energy physics experiments. The GBLD provides laser bias and modulation currents up to 43 mA and 24 mA, respectively. It can thus be used to drive vertical cavity surface emitting laser (VCSEL) and edge-emitting laser diodes. A pre-emphasis circuit, which can provide up to 12 mA in 70 ps pulses, has also been implemented to compensate for high external capacitive loads. The current driving capabilities of the LpGBLD are 2 times smaller that those of the GBLD as it has been optimized to drive VCSELs in order to minimize the power consumption. Both application-specific integrated circuits are designed in 0.13 m commercial complementary metal-o...

  4. Simultaneous 10 Gbps data and polarization-based pulse-per-second clock transmission using a single VCSEL for high-speed optical fibre access networks

    Science.gov (United States)

    Isoe, G. M.; Wassin, S.; Gamatham, R. R. G.; Leitch, A. W. R.; Gibbon, T. B.

    2017-01-01

    Access networks based on vertical cavity surface emitting laser (VCSEL) transmitters offer alternative solution in delivering different high bandwidth, cost effective services to the customer premises. Clock and reference frequency distribution is critical for applications such as Coordinated Universal Time (UTC), GPS, banking and big data science projects. Simultaneous distribution of both data and timing signals over shared infrastructure is thus desirable. In this paper, we propose and experimentally demonstrate a novel, cost-effective technique for multi-signal modulation on a single VCSEL transmitter. Two signal types, an intensity modulated 10 Gbps data signal and a polarization-based pulse per second (PPS) clock signal are directly modulated onto a single VCSEL carrier at 1310 nm. Spectral efficiency is maximized by exploiting inherent orthogonal polarization switching of the VCSEL with changing bias in transmission of the PPS signal. A 10 Gbps VCSEL transmission with PPS over 11 km of G.652 fibre introduced a transmission penalty of 0.52 dB. The contribution of PPS to this penalty was found to be 0.08 dB.

  5. New VCSEL technology with scalability for single mode operation and densely integrated arrays

    Science.gov (United States)

    Zhao, Guowei; Demir, Abdullah; Freisem, Sabine; Zhang, Yu; Liu, Xiaohang; Deppe, Dennis G.

    2011-06-01

    Data are presented demonstrating a new lithographic vertical-cavity surface-emitting laser (VCSEL) technology, which produces simultaneous mode- and current-confinement only by lithography and epitaxial crystal growth. The devices are grown by solid source molecular beam epitaxy, and have lithographically defined sizes that vary from 3 μm to 20 μm. The lithographic process allows the devices to have high uniformity throughout the wafer and scalability to very small size. The 3 μm device shows a threshold current of 310 μA, the slope efficiency of 0.81 W/A, and the maximum output power of more than 5 mW. The 3 μm device also shows single-mode single-polarization operation without the use of surface grating, and has over 25 dB side-mode-suppression-ratio up to 1 mW of output power. The devices have low thermal resistance due to the elimination of oxide aperture. High reliability is achieved by removal of internal strain caused by the oxide, stress test shows no degradation for the 3 μm device operating at very high injection current level of 142 kA/cm2 for 1000 hours, while at this dive level commercial VCSELs fail rapidly. The lithographic VCSEL technology can lead to manufacture of reliable small size laser diode, which will have application in large area 2-D arrays and low power sensors.

  6. Characterization of InAs quantum wires on (001)InP: toward the realization of VCSEL structures with a stabilized polarization

    Energy Technology Data Exchange (ETDEWEB)

    Lamy, J.M.; Levallois, C.; Nakhar, A.; Caroff, P.; Paranthoen, C.; Piron, R.; Le Corre, A.; Loualiche, S. [UMR C6082 FOTON - INSA de Rennes, 20 Avenue des Buttes de Coesmes, 35043 Rennes (France); Ramdane, A. [Laboratoire de Photonique et Nanostructures, CNRS UPR20, Route de Nozay, 91460 Marcoussis (France)

    2007-06-15

    We propose a new type of long-wavelength vertical cavity surface emitting laser (VCSEL) which consists of quantum wires (QWires) layers of InAs/InGaAsP grown on InP(001) and dielectrics Bragg mirrors, in order to control the in plane polarization of output power. QWires and quantum wells growth are performed by molecular beam epitaxy. QWires present a strong photoluminescence dependence to the polarization in contrast to the quantum wells, a polarization rate of 33% is measured. The optically pumped VCSEL is fabricated by metallic bonding, which allows the deposition of two dielectrics Bragg mirrors. The VCSEL with an active region based on InGaAs/InGaAsP quantum wells exhibits a lasing emission at 1.578 {mu}m at room temperature under continuous wave operation. The VCSEL with an active region based on quantum wires shows a luminescence at 1.53 {mu}m strongly polarized along the direction [1 anti 10] which is promising for the stabilization of in plane polarization of VCSEL emission. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  7. Characterization of InAs quantum wires on (001)InP: toward the realization of VCSEL structures with a stabilized polarization

    International Nuclear Information System (INIS)

    Lamy, J.M.; Levallois, C.; Nakhar, A.; Caroff, P.; Paranthoen, C.; Piron, R.; Le Corre, A.; Loualiche, S.; Ramdane, A.

    2007-01-01

    We propose a new type of long-wavelength vertical cavity surface emitting laser (VCSEL) which consists of quantum wires (QWires) layers of InAs/InGaAsP grown on InP(001) and dielectrics Bragg mirrors, in order to control the in plane polarization of output power. QWires and quantum wells growth are performed by molecular beam epitaxy. QWires present a strong photoluminescence dependence to the polarization in contrast to the quantum wells, a polarization rate of 33% is measured. The optically pumped VCSEL is fabricated by metallic bonding, which allows the deposition of two dielectrics Bragg mirrors. The VCSEL with an active region based on InGaAs/InGaAsP quantum wells exhibits a lasing emission at 1.578 μm at room temperature under continuous wave operation. The VCSEL with an active region based on quantum wires shows a luminescence at 1.53 μm strongly polarized along the direction [1 anti 10] which is promising for the stabilization of in plane polarization of VCSEL emission. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  8. Chronic monitoring of cortical hemodynamics in behaving, freely-moving rats using a miniaturized head-mounted optical microscope

    Science.gov (United States)

    Sigal, Iliya; Gad, Raanan; Koletar, Margaret; Ringuette, Dene; Stefanovic, Bojana; Levi, Ofer

    2016-03-01

    Growing interest within the neurophysiology community in assessing healthy and pathological brain activity in animals that are awake and freely-behaving has triggered the need for optical systems that are suitable for such longitudinal studies. In this work we report label-free multi-modal imaging of cortical hemodynamics in the somatosensory cortex of awake, freely-behaving rats, using a novel head-mounted miniature optical microscope. The microscope employs vertical cavity surface emitting lasers (VCSELs) at three distinct wavelengths (680 nm, 795 nm, and 850 nm) to provide measurements of four hemodynamic markers: blood flow speeds, HbO, HbR, and total Hb concentration, across a > 2 mm field of view. Blood flow speeds are extracted using Laser Speckle Contrast Imaging (LSCI), while oxygenation measurements are performed using Intrinsic Optical Signal Imaging (IOSI). Longitudinal measurements on the same animal are made possible over the course of > 6 weeks using a chronic window that is surgically implanted into the skull. We use the device to examine changes in blood flow and blood oxygenation in superficial cortical blood vessels and tissue in response to drug-induced absence-like seizures, correlating motor behavior with changes in blood flow and blood oxygenation in the brain.

  9. Capacity upgrade in short-reach optical fibre networks: simultaneous 4-PAM 20 Gbps data and polarization-modulated PPS clock signal using a single VCSEL carrier

    Science.gov (United States)

    Isoe, G. M.; Wassin, S.; Gamatham, R. R. G.; Leitch, A. W. R.; Gibbon, T. B.

    2017-11-01

    In this work, a four-level pulse amplitude modulation (4-PAM) format with a polarization-modulated pulse per second (PPS) clock signal using a single vertical cavity surface emitting laser (VCSEL) carrier is for the first time experimentally demonstrated. We propose uncomplex alternative technique for increasing capacity and flexibility in short-reach optical communication links through multi-signal modulation onto a single VCSEL carrier. A 20 Gbps 4-PAM data signal is directly modulated onto a single mode 10 GHz bandwidth VCSEL carrier at 1310 nm, therefore, doubling the network bit rate. Carrier spectral efficiency is further maximized by exploiting the inherent orthogonal polarization switching of the VCSEL carrier with changing bias in transmission of a PPS clock signal. We, therefore, simultaneously transmit a 20 Gbps 4-PAM data signal and a polarization-based PPS clock signal using a single VCSEL carrier. It is the first time a signal VCSEL carrier is reported to simultaneously transmit a directly modulated 20 Gbps 4-PAM data signal and a polarization-based PPS clock signal. We further demonstrate on the design of a software-defined digital signal processing (DSP)-assisted receiver as an alternative to costly receiver hardware. Experimental results show that a 3.21 km fibre transmission with simultaneous 20 Gbps 4-PAM data signal and polarization-based PPS clock signal introduced a penalty of 3.76 dB. The contribution of polarization-based PPS clock signal to this penalty was found out to be 0.41 dB. Simultaneous distribution of data and timing clock signals over shared network infrastructure significantly increases the aggregated data rate at different optical network units (ONUs), without costly investment.

  10. New Architecture of Optical Interconnect for High-Speed Optical Computerized Data Networks (Nonlinear Response

    Directory of Open Access Journals (Sweden)

    El-Sayed A. El-Badawy

    2008-02-01

    Full Text Available Although research into the use of optics in computers has increased in the last and current decades, the fact remains that electronics is still superior to optics in almost every way. Research into the use of optics at this stage mirrors the research into electronics after the 2nd World War. The advantages of using fiber optics over wiring are the same as the argument for using optics over electronics in computers. Even through totally optical computers are now a reality, computers that combine both electronics and optics, electro-optic hybrids, have been in use for some time. In the present paper, architecture of optical interconnect is built up on the bases of four Vertical-Cavity Surface- Emitting Laser Diodes (VCSELD and two optical links where thermal effects of both the diodes and the links are included. Nonlinear relations are correlated to investigate the power-current and the voltage-current dependences of the four devices. The good performance (high speed of the interconnect is deeply and parametrically investigated under wide ranges of the affecting parameters. The high speed performance is processed through three different effects, namely the device 3-dB bandwidth, the link dispersion characteristics, and the transmitted bit rate (soliton. Eight combinations are investigated; each possesses its own characteristics. The best architecture is the one composed of VCSELD that operates at 850 nm and the silica fiber whatever the operating set of causes. This combination possesses the largest device 3-dB bandwidth, the largest link bandwidth and the largest soliton transmitted bit rate. The increase of the ambient temperature reduces the high-speed performance of the interconnect

  11. Analysis of thin-film photonic crystal microstructures

    International Nuclear Information System (INIS)

    Pottage, John Mark

    2003-01-01

    Optical-scale microstructures containing thin-film photonic crystals (TFPCs) are modelled by transfer/scattering matrix methods, based on Fourier-series expansion of the optical Bloch eigenmodes. The majority of the TFPCs considered consist of 2D arrays of holes arranged in a triangular lattice, etched into high-index Al x Ga 1-x As and placed on a low-index oxidised substrate. These TFPCs can be easily fabricated by standard electron-beam lithography techniques. Unlike most photonic crystal devices that have been proposed, our 'intra-pass-band' TFPCs would work by exploiting the somewhat surprising properties of propagating optical Bloch waves rather than directly relying on photonic bandgaps. By numerical modelling, it is demonstrated that 2D-patterned TFPCs can support highly dispersive high-Q quasi-guided and truly-guided resonant modes, and the unusual properties of these modes are explained in terms of their Bloch-wave compositions. Modal dispersion diagrams of TFPCs, showing the loci of the resonant modes in in-plane wavevector space at fixed frequency, are calculated. These so-called 'resonance diagrams' and variants thereof, are shown to be a useful design tool for TFPC-based integrated optical components. It is suggested that TFPCs may be a viable alternative to distributed Bragg reflectors in semiconductor vertical cavity surface-emitting lasers, possessing potential advantages in terms of compactness and ease of fabrication. The high angular and spectral dispersion of the resonant modes implies that TFPCs could form the basis of a new family of compact devices for performing such functions as wavelength-division multiplexing/demultiplexing, beam-steering and frequency-selective filtering. Enhancement of nonlinear effects could also be achieved in TFPC resonators, because in them a high cavity Q-factor and a low in-plane group-velocity can be attained simultaneously. (author)

  12. Measurement of atmospheric carbon dioxide and water vapor in built-up urban areas in the Gandhinagar-Ahmedabad region in India using a portable tunable diode laser spectroscopy system.

    Science.gov (United States)

    Roy, Anirban; Sharma, Neetesh Kumar; Chakraborty, Arup Lal; Upadhyay, Abhishek

    2017-11-01

    This paper reports open-path in situ measurements of atmospheric carbon dioxide at Gandhinagar (23.2156°N, 72.6369°E) and Ahmedabad (23.0225°N, 72.5714°E) in the heavily industrialized state of Gujarat in western India. Calibration-free second harmonic wavelength modulation spectroscopy (2f WMS) is used to carry out accurate and fully automated measurements. The mean values of the mole fraction of carbon dioxide at four locations were 438 ppm, 495 ppm, 550 ppm, and 740 ppm, respectively. These values are much higher than the current global average of 406.67 ppm. A 1 mW, 2004-nm vertical cavity surface-emitting laser is used to selectively interrogate the R16 transition of carbon dioxide at 2003.5 nm (4991.2585 cm -1 ). The 2f WMS signal corresponding to the gas absorption line shape is simulated using spectroscopic parameters available in the HITRAN database and relevant laser parameters that are extracted in situ from non-absorbing spectral wings of the harmonic signals. The mole fraction of carbon dioxide is extracted in real-time by a MATLAB program from least-squares fit of the simulated 2f WMS signal to the corresponding experimentally obtained signal. A 10-mW, 1392.54-nm distributed feedback laser is used at two of the locations to carry out water vapor measurements using direct absorption spectroscopy. This is the first instance of a portable tunable diode laser spectroscopy system being deployed in an urban location in India to measure atmospheric carbon dioxide and water vapor under varying traffic conditions. The measurements clearly demonstrate the need to adopt tunable diode laser spectroscopy for precise long-term monitoring of greenhouse gases in the Indian subcontinent.

  13. Multiband corrections for the semi-classical simulation of interband tunneling in GaAs tunnel junctions

    Science.gov (United States)

    Louarn, K.; Claveau, Y.; Hapiuk, D.; Fontaine, C.; Arnoult, A.; Taliercio, T.; Licitra, C.; Piquemal, F.; Bounouh, A.; Cavassilas, N.; Almuneau, G.

    2017-09-01

    The aim of this study is to investigate the impact of multiband corrections on the current density in GaAs tunnel junctions (TJs) calculated with a refined yet simple semi-classical interband tunneling model (SCITM). The non-parabolicity of the considered bands and the spin-orbit effects are considered by using a recently revisited SCITM available in the literature. The model is confronted to experimental results from a series of molecular beam epitaxy grown GaAs TJs and to numerical results obtained with a full quantum model based on the non-equilibrium Green’s function formalism and a 6-band k.p Hamiltonian. We emphasize the importance of considering the non-parabolicity of the conduction band by two different measurements of the energy-dependent electron effective mass in N-doped GaAs. We also propose an innovative method to compute the non-uniform electric field in the TJ for the SCITM simulations, which is of prime importance for a successful operation of the model. We demonstrate that, when considering the multiband corrections and this new computation of the non-uniform electric field, the SCITM succeeds in predicting the electrical characteristics of GaAs TJs, and are also in agreement with the quantum model. Besides the fundamental study of the tunneling phenomenon in TJs, the main benefit of this SCITM is that it can be easily embedded into drift-diffusion software, which are the most widely-used simulation tools for electronic and opto-electronic devices such as multi-junction solar cells, tunnel field-effect transistors, or vertical-cavity surface-emitting lasers.

  14. Progress Toward Measuring CO2 Isotopologue Fluxes in situ with the LLNL Miniature, Laser-based CO2 Sensor

    Science.gov (United States)

    Osuna, J. L.; Bora, M.; Bond, T.

    2015-12-01

    One method to constrain photosynthesis and respiration independently at the ecosystem scale is to measure the fluxes of CO2­ isotopologues. Instrumentation is currently available to makes these measurements but they are generally costly, large, bench-top instruments. Here, we present progress toward developing a laser-based sensor that can be deployed directly to a canopy to passively measure CO2 isotopologue fluxes. In this study, we perform initial proof-of-concept and sensor characterization tests in the laboratory and in the field to demonstrate performance of the Lawrence Livermore National Laboratory (LLNL) tunable diode laser flux sensor. The results shown herein demonstrate measurement of bulk CO2 as a first step toward achieving flux measurements of CO2 isotopologues. The sensor uses a Vertical Cavity Surface Emitting Laser (VCSEL) in the 2012 nm range. The laser is mounted in a multi-pass White Cell. In order to amplify the absorption signal of CO2 in this range we employ wave modulation spectroscopy, introducing an alternating current (AC) bias component where f is the frequency of modulation on the laser drive current in addition to the direct current (DC) emission scanning component. We observed a strong linear relationship (r2 = 0.998 and r2 = 0.978 at all and low CO2 concentrations, respectively) between the 2f signal and the CO2 concentration in the cell across the range of CO2 concentrations relevant for flux measurements. We use this calibration to interpret CO2 concentration of a gas flowing through the White cell in the laboratory and deployed over a grassy field. We will discuss sensor performance in the lab and in situ as well as address steps toward achieving canopy-deployed, passive measurements of CO2 isotopologue fluxes. This work performed under the auspices of the U.S. Department of Energy by Lawrence Livermore National Laboratory under Contract DE-AC52-07NA27344. LLNL-ABS-675788

  15. Measurement of ciliary beat frequency using Doppler optical coherence tomography.

    Science.gov (United States)

    Lemieux, Bryan T; Chen, Jason J; Jing, Joseph; Chen, Zhongping; Wong, Brian J F

    2015-11-01

    Measuring ciliary beat frequency (CBF) is a technical challenge and difficult to perform in vivo. Doppler optical coherence tomography (D-OCT) is a mesoscopic noncontact imaging modality that provides high-resolution tomographic images and detects micromotion simultaneously in living tissues. In this work we used D-OCT to measure CBF in ex vivo tissue as the first step toward translating this technology to clinical use. Fresh ex vivo samples of rabbit tracheal mucosa were imaged using both D-OCT and phase-contrast microscopy (n = 5). The D-OCT system was designed and built to specification in our lab (1310-nm swept source vertical-cavity surface-emitting laser [VCSEL], 6-μm axial resolution). The samples were placed in culture and incubated at 37°C. A fast Fourier transform was performed on the D-OCT signal recorded on the surface of the samples to gauge CBF. High-speed digital video of the epithelium recorded via phase-contrast microscopy was analyzed to confirm the CBF measurements. The D-OCT system detected Doppler signal at the epithelial layer of ex vivo rabbit tracheal samples suggestive of ciliary motion. CBF was measured at 9.36 ± 1.22 Hz using D-OCT and 9.08 ± 0.48 Hz using phase-contrast microscopy. No significant differences were found between the 2 methods (p > 0.05). D-OCT allows for the quantitative measurement of CBF without the need to resolve individual cilia. Furthermore, D-OCT technology can be incorporated into endoscopic platforms that allow clinicians to readily measure CBF in the office and provide a direct measurement of mucosal health. © 2015 ARS-AAOA, LLC.

  16. The material system (AlGaIn)(AsSb). Properties and suitability for GaSb based vertical-resonator laser diodes

    International Nuclear Information System (INIS)

    Dier, Oliver

    2008-01-01

    The present thesis studies the particular properties of GaSb-based materials, where they differ from pure arsenides or phosphides, and also the impact of theses properties on long-wavelength vertical-cavity surface-emitting lasers (VCSELs). The goal is the first realisation of an electrically pumped VCSEL with a current aperture in this material system. After the basics, which are necessary for the understanding of the physical effects, the special features of antimony-containing materials are discussed with a focus on topics like band-structure, doping issues and miscibility gaps, which are relevant for devices. A VCSEL-structure optimized for long-wavelength applications is presented using an appropriate description of the device in its optical, electrical and thermal properties. A focus of this work is on the growth of laser-structures by molecular beam epitaxy. Annealing studies on this material showed a good prediction of the final wavelength after the temperature step, which is necessary due to the overgrowth of the tunnel-junction. The full-width at half maximum of the low-temperature photoluminescence signal shows a very low value of 3.95 meV for the quaternary active region. By using the type-II-band alignment of GaSb:Si and InAsSb:Si a low-resistive tunneljunction has been realised. After completion of the device processing a strong electroluminescence outside the DBR stopband and resonant modes within the stopband were found. A linear shift of the emission wavelength with temperature of 0.23 nm/K between -11 C and +30 C was found. (orig.)

  17. Use of microring resonators for biospecific interaction analysis

    Science.gov (United States)

    Chalyan, Tatevik; Besselink, Geert A. J.; Heideman, Rene G.; Pavesi, Lorenzo

    2017-08-01

    Integrated optical biosensors based on Mach-Zehnder Interferometers and Microring Resonators are widely used for food/drug monitoring and protein studies thank to their high intrinsic sensitivity, easy integration and miniaturization, and low cost.1, 2 In this study, we present a system to perform antibody interaction analysis using a photonic chip made of an array of six microring resonators (MRRs) based on the TriPleX platform. A compact system is presented where the input light is provided by a Vertical Cavity Surface Emitting Laser (VCSEL) pigtailed to a single mode fiber and operating at a ≍ 850nm wavelength. The output signal is detected by PIN photodetectors placed in the optical signal read-out module (the so-called OSROM) and processed by an easy-to-use Fourier Transform algorithm. Bulk sensitivity (Sb=98+/-2.1 nm/RIU) and Limit of Detection (LOD=(7.5+/- 0.5) x10-6 RIU) are measured and appeared to be very similar for the six MRRs on the same chip,3 which is an important property for multianalyte detection. An analysis of the anti-biotin interaction with immobilized biotin is performed by using different concentrations of anti-biotin antibody. The dependence of the resonance wavelength shift from the antibody concentration, as well as the association and the dissociation rate constants are calculated. For the average dissociation constant (KD) of anti-biotin antibody toward immobilized biotin, a value of (1.9+/-0.5) x10-7M is estimated, which is of the same order of magnitude of other published data.4 Furthermore, the specificity of the interaction is confirmed by using negative control antibodies and by performing competition with free, i.e., dissolved, biotin. In addition, the functional surface of the sensors could be regenerated for repeated measurements up to eight times by using 10 mM glycine/HCl pH 1.5.

  18. Key techniques for space-based solar pumped semiconductor lasers

    Science.gov (United States)

    He, Yang; Xiong, Sheng-jun; Liu, Xiao-long; Han, Wei-hua

    2014-12-01

    In space, the absence of atmospheric turbulence, absorption, dispersion and aerosol factors on laser transmission. Therefore, space-based laser has important values in satellite communication, satellite attitude controlling, space debris clearing, and long distance energy transmission, etc. On the other hand, solar energy is a kind of clean and renewable resources, the average intensity of solar irradiation on the earth is 1353W/m2, and it is even higher in space. Therefore, the space-based solar pumped lasers has attracted much research in recent years, most research focuses on solar pumped solid state lasers and solar pumped fiber lasers. The two lasing principle is based on stimulated emission of the rare earth ions such as Nd, Yb, Cr. The rare earth ions absorb light only in narrow bands. This leads to inefficient absorption of the broad-band solar spectrum, and increases the system heating load, which make the system solar to laser power conversion efficiency very low. As a solar pumped semiconductor lasers could absorb all photons with energy greater than the bandgap. Thus, solar pumped semiconductor lasers could have considerably higher efficiencies than other solar pumped lasers. Besides, solar pumped semiconductor lasers has smaller volume chip, simpler structure and better heat dissipation, it can be mounted on a small satellite platform, can compose satellite array, which can greatly improve the output power of the system, and have flexible character. This paper summarizes the research progress of space-based solar pumped semiconductor lasers, analyses of the key technologies based on several application areas, including the processing of semiconductor chip, the design of small and efficient solar condenser, and the cooling system of lasers, etc. We conclude that the solar pumped vertical cavity surface-emitting semiconductor lasers will have a wide application prospects in the space.

  19. CENTRAL WAVELENGTH ADJUSTMENT OF LIGHT EMITTING SOURCE IN INTERFEROMETRIC SENSORS BASED ON FIBER-OPTIC BRAGG GRATINGS

    Directory of Open Access Journals (Sweden)

    A. S. Aleynik

    2015-09-01

    Full Text Available The paper is focused on the investigation of fiber-optic interferometric sensor based on the array of fiber Bragg gratings. Reflection spectra displacement mechanism of the fiber Bragg gratings under the external temperature effects and the static pressure is described. The experiment has shown that reflection spectra displacement of Bragg gratings reduces the visibility of the interference pattern. A method of center wavelength adjustment is proposed for the optical radiation source in accord ance with the current Bragg gratings reflection spectra based on the impulse relative modulation of control signal for the Peltier element controller. The semiconductor vertical-cavity surface-emitting laser controlled by a pump driver is used as a light source. The method is implemented by the Peltier element controller regulating and stabilizing the light source temperature, and a programmable logic-integrated circuit monitoring the Peltier element controller. The experiment has proved that the proposed method rendered possible to regulate the light source temperature at a pitch of 0.05 K and adjust the optical radiation source center wavelength at a pitch of 0.05 nm. Experimental results have revealed that the central wavelength of the radiation adjustment at a pitch of 0.005 nm gives the possibility for the capacity of the array consisting of four opticalfiber sensors based on the fiber Bragg gratings. They are formed in one optical fiber under the Bragg grating temperature change from 0° C to 300° C and by the optical fiber mechanical stretching by the force up to 2 N.

  20. Self-aligned BCB planarization method for high-frequency signal injection in a VCSEL with an integrated modulator

    Science.gov (United States)

    Marigo-Lombart, Ludovic; Doucet, Jean-Baptiste; Lecestre, Aurélie; Reig, Benjamin; Rousset, Bernard; Thienpont, Hugo; Panajotov, Krassimir; Almuneau, Guilhem

    2016-04-01

    The huge increase of datacom capacities requires lasers sources with more and more bandwidth performances. Vertical-Cavity Surface-Emitting Lasers (VCSEL) in direct modulation is a good candidate, already widely used for short communication links such as in datacenters. Recently several different approaches have been proposed to further extend the direct modulation bandwidth of these devices, by improving the VCSEL structure, or by combining the VCSEL with another high speed element such as lateral slow light modulator or transistor/laser based structure (TVCSEL). We propose to increase the modulation bandwidth by vertically integrating a continuous-wave VCSEL with a high-speed electro-modulator. This vertical structure implies multiple electrodes with sufficiently good electrical separation between the different input electrical signals. This high frequency modulation requires both good electrical insulation between metal electrodes and an optimized design of the coplanar lines. BenzoCyclobutene (BCB) thanks to its low dielectric constant, low losses, low moisture absorption and good thermal stability, is often used as insulating layer. Also, BCB planarization offers the advantages of simpler and more reliable technological process flow in such integrated VCSEL/modulator structures with important reliefs. As described by Burdeaux et al. a degree of planarization (DOP) of about 95% can be achieved by simple spin coating whatever the device thickness. In most of the cases, the BCB planarization process requires an additional photolithography step in order to open an access to the mesa surface, thus involving a tight mask alignment and resulting in a degraded planarization. In this paper, we propose a self-aligned process with improved BCB planarization by combining a hot isostatic pressing derived from nanoimprint techniques with a dry plasma etching step.

  1. Comparison of single-/few-/multi-mode 850 nm VCSELs for optical OFDM transmission.

    Science.gov (United States)

    Kao, Hsuan-Yun; Tsai, Cheng-Ting; Leong, Shan-Fong; Peng, Chun-Yen; Chi, Yu-Chieh; Huang, Jian Jang; Kuo, Hao-Chung; Shih, Tien-Tsorng; Jou, Jau-Ji; Cheng, Wood-Hi; Wu, Chao-Hsin; Lin, Gong-Ru

    2017-07-10

    For high-speed optical OFDM transmission applications, a comprehensive comparison of the homemade multi-/few-/single-transverse mode (MM/FM/SM) vertical cavity surface emitting laser (VCSEL) chips is performed. With microwave probe, the direct encoding of pre-leveled 16-QAM OFDM data and transmission over 100-m-long OM4 multi-mode-fiber (MMF) are demonstrated for intra-datacenter applications. The MM VCSEL chip with the largest emission aperture of 11 μm reveals the highest differential quantum efficiency which provides the highest optical power of 8.67 mW but exhibits the lowest encodable bandwidth of 21 GHz. In contrast, the SM VCSEL chip fabricated with the smallest emission aperture of only 3 μm provides the highest 3-dB encoding bandwidth up to 23 GHz at a cost of slight heat accumulation. After optimization, with the trade-off set between the receiving signal-to-noise ratio (SNR) and bandwidth, the FM VCSEL chip guarantees the highest optical OFDM transmission bit rate of 96 Gbit/s under back-to-back case with its strongest throughput. Among three VCSEL chips, the SM VCSEL chip with nearly modal-dispersion free feature is treated as the best candidate for carrying the pre-leveled 16-QAM OFDM data over 100-m OM4-MMF with same material structure but exhibits different oxide-layer confined gain cross-sections with one another at 80-Gbit/s with the smallest receiving power penalty of 1.77 dB.

  2. Development of integrated semiconductor optical sensors for functional brain imaging

    Science.gov (United States)

    Lee, Thomas T.

    Optical imaging of neural activity is a widely accepted technique for imaging brain function in the field of neuroscience research, and has been used to study the cerebral cortex in vivo for over two decades. Maps of brain activity are obtained by monitoring intensity changes in back-scattered light, called Intrinsic Optical Signals (IOS), that correspond to fluctuations in blood oxygenation and volume associated with neural activity. Current imaging systems typically employ bench-top equipment including lamps and CCD cameras to study animals using visible light. Such systems require the use of anesthetized or immobilized subjects with craniotomies, which imposes limitations on the behavioral range and duration of studies. The ultimate goal of this work is to overcome these limitations by developing a single-chip semiconductor sensor using arrays of sources and detectors operating at near-infrared (NIR) wavelengths. A single-chip implementation, combined with wireless telemetry, will eliminate the need for immobilization or anesthesia of subjects and allow in vivo studies of free behavior. NIR light offers additional advantages because it experiences less absorption in animal tissue than visible light, which allows for imaging through superficial tissues. This, in turn, reduces or eliminates the need for traumatic surgery and enables long-term brain-mapping studies in freely-behaving animals. This dissertation concentrates on key engineering challenges of implementing the sensor. This work shows the feasibility of using a GaAs-based array of vertical-cavity surface emitting lasers (VCSELs) and PIN photodiodes for IOS imaging. I begin with in-vivo studies of IOS imaging through the skull in mice, and use these results along with computer simulations to establish minimum performance requirements for light sources and detectors. I also evaluate the performance of a current commercial VCSEL for IOS imaging, and conclude with a proposed prototype sensor.

  3. Thermal wave interference with high-power VCSEL arrays for locating vertically oriented subsurface defects

    Science.gov (United States)

    Thiel, Erik; Kreutzbruck, Marc; Studemund, Taarna; Ziegler, Mathias

    2018-04-01

    Among the photothermal methods, full-field thermal imaging is used to characterize materials, to determine thicknesses of layers, or to find inhomogeneities such as voids or cracks. The use of classical light sources such as flash lamps (impulse heating) or halogen lamps (modulated heating) led to a variety of nondestructive testing methods, in particular, lock-in and flash-thermography. In vertical-cavity surface-emitting lasers (VCSELs), laser light is emitted perpendicularly to the surface with a symmetrical beam profile. Due to the vertical structure, they can be arranged in large arrays of many thousands of individual lasers, which allows power scaling into the kilowatt range. Recently, a high-power yet very compact version of such a VCSEL-array became available that offers both the fast timing behavior of a laser as well as the large illumination area of a lamp. Moreover, it allows a spatial and temporal control of the heating because individual parts of the array can be controlled arbitrarily in frequency, amplitude, and phase. In conjunction with a fast infrared camera, such structured heating opens up a field of novel thermal imaging and testing methods. As a first demonstration of this approach, we chose a testing problem very challenging to conventional thermal infrared testing: The detection of very thin subsurface defects perpendicularly oriented to the surface of metallic samples. First, we generate destructively interfering thermal wave fields, which are then affected by the presence of defects within their reach. It turned out that this technique allows highly sensitive detection of subsurface defects down to depths in excess of the usual thermographic rule of thumb, with no need for a reference or surface preparation.

  4. A novel conductive-polymer-based integration process for high-performance flip-chip packages

    Science.gov (United States)

    Lohokare, Saurabh

    Conductive polymers have recently attracted considerable attention for low-temperature fabrication of lead-free, reworkable, and flexible flip-chip interconnects. Using these materials, I demonstrate in this thesis a process that enables low-cost and high-resolution flip-chip interconnects using conventional micro-fabrication techniques. This fabrication process offers improved performance as compared to conventional flip-chip techniques, such as screen-printing, and allows for definition of interconnects with excellent surface uniformity and control over the bump profile. In order to demonstrate the utility and wide applicability of this process, several test implementations that serve as case studies were investigated. Specifically, novel InGaAsSb avalanche photodiodes (APDs), operating around lambda = 2m and targeted for free-space communication and biomedical spectroscopy applications, were fabricated and flip-chip-integrated to test the static electrical characteristics of the polymer bumps. Additionally, the dynamic electrical performance characteristics of the polymer bumps were studied by using AlGaAsSb/AlGaSb p-i-n photodetectors as a case study. The fabrication of these photodetectors, operating around lambda = 1.55mum and targeted for optical communication applications, was accomplished using a customized inductively coupled plasma (ICP) etch process that resulted in a low dark current and excellent speed (3dB bandwidth of 10GHz) and, responsivity (60% external quantum efficiency) characteristics. Furthermore, flip-chip integration was used to demonstrate a three-dimensional, point-to-point micro-optical interconnect, which was 2.33mm-long in a system 15.27mm3 in volume. Lastly, high-speed parallel optical interconnects were demonstrated using polymer-flip-chip-integrated 10GHz vertical-cavity surface-emitting laser (VCSEL) and DOEs. Such interconnects offer the ability to alleviate the communication bottleneck that is projected to occur in future, high

  5. Ultra-thin silicon (UTSi) on insulator CMOS transceiver and time-division multiplexed switch chips for smart pixel integration

    Science.gov (United States)

    Zhang, Liping; Sawchuk, Alexander A.

    2001-12-01

    We describe the design, fabrication and functionality of two different 0.5 micron CMOS optoelectronic integrated circuit (OEIC) chips based on the Peregrine Semiconductor Ultra-Thin Silicon on insulator technology. The Peregrine UTSi silicon- on-sapphire (SOS) technology is a member of the silicon-on- insulator (SOI) family. The low-loss synthetic sapphire substrate is optically transparent and has good thermal conductivity and coefficient of thermal expansion properties, which meet the requirements for flip-chip bonding of VCSELs and other optoelectronic input-output components. One chip contains transceiver and network components, including four channel high-speed CMOS transceiver modules, pseudo-random bit stream (PRBS) generators, a voltage controlled oscillator (VCO) and other test circuits. The transceiver chips can operate in both self-testing mode and networking mode. An on- chip clock and true-single-phase-clock (TSPC) D-flip-flop have been designed to generate a PRBS at over 2.5 Gb/s for the high-speed transceiver arrays to operate in self-testing mode. In the networking mode, an even number of transceiver chips forms a ring network through free-space or fiber ribbon interconnections. The second chip contains four channel optical time-division multiplex (TDM) switches, optical transceiver arrays, an active pixel detector and additional test devices. The eventual applications of these chips will require monolithic OEICs with integrated optical input and output. After fabrication and testing, the CMOS transceiver array dies will be packaged with 850 nm vertical cavity surface emitting lasers (VCSELs), and metal-semiconductor- metal (MSM) or GaAs p-i-n detector die arrays to achieve high- speed optical interconnections. The hybrid technique could be either wire bonding or flip-chip bonding of the CMOS SOS smart-pixel arrays with arrays of VCSELs and photodetectors onto an optoelectronic chip carrier as a multi-chip module (MCM).

  6. The material system (AlGaIn)(AsSb). Properties and suitability for GaSb based vertical-resonator laser diodes; Das Materialsystem (AlGaIn)(AsSb). Eigenschaften und Eignung fuer GaSb-basierte Vertikalresonator-Laserdioden

    Energy Technology Data Exchange (ETDEWEB)

    Dier, Oliver

    2008-07-01

    The present thesis studies the particular properties of GaSb-based materials, where they differ from pure arsenides or phosphides, and also the impact of theses properties on long-wavelength vertical-cavity surface-emitting lasers (VCSELs). The goal is the first realisation of an electrically pumped VCSEL with a current aperture in this material system. After the basics, which are necessary for the understanding of the physical effects, the special features of antimony-containing materials are discussed with a focus on topics like band-structure, doping issues and miscibility gaps, which are relevant for devices. A VCSEL-structure optimized for long-wavelength applications is presented using an appropriate description of the device in its optical, electrical and thermal properties. A focus of this work is on the growth of laser-structures by molecular beam epitaxy. Annealing studies on this material showed a good prediction of the final wavelength after the temperature step, which is necessary due to the overgrowth of the tunnel-junction. The full-width at half maximum of the low-temperature photoluminescence signal shows a very low value of 3.95 meV for the quaternary active region. By using the type-II-band alignment of GaSb:Si and InAsSb:Si a low-resistive tunneljunction has been realised. After completion of the device processing a strong electroluminescence outside the DBR stopband and resonant modes within the stopband were found. A linear shift of the emission wavelength with temperature of 0.23 nm/K between -11 C and +30 C was found. (orig.)

  7. Determination of gas temperature and thermometric species in inductively coupled plasmas by emission and diode laser absorption

    International Nuclear Information System (INIS)

    Bol'shakov, Alexander A; Cruden, Brett A; Sharma, Surendra P

    2004-01-01

    A vertical cavity surface-emitting laser diode (VCSEL) was used as a spectrally tunable emission source for measurements of the radial-integrated gas temperature inside an inductively coupled plasma reactor. The data were obtained by profiling the Doppler-broadened absorption of metastable Ar atoms at 763.51 nm in argon and argon/nitrogen plasmas (3%, 45%, and 90% N 2 in Ar) at pressures of 0.5-70 Pa and inductive powers of 100 and 300 W. The results were compared to the rotational temperature derived from the N 2 emission at the (0,0) vibrational transition of the C 3 Π u -B 3 Π g system. The differences in integrated rotational and Doppler temperatures were attributed to non-uniform spatial distributions of both temperature and thermometric species (Ar * and N 2 *) that varied depending on the conditions. A two-dimensional, three-temperature fluid plasma simulation was employed to explain these differences. This work should facilitate further development of a miniature sensor for non-intrusive acquisition of data (temperature and densities of multiple plasma species) during micro- and nano-fabrication plasma processing, thus enabling diagnostic-assisted continuous optimization and advanced control over the processes. Such sensors would also enable us to track the origins and pathways of damaging contaminants, thereby providing real-time feedback for adjustment of processes. Our work serves as an example of how two line-of-sight integrated temperatures derived from different thermometric species make it possible to characterize the radial non-uniformity of the plasma

  8. Determination of gas temperature and thermometric species in inductively coupled plasmas by emission and diode laser absorption

    Energy Technology Data Exchange (ETDEWEB)

    Bol' shakov, Alexander A; Cruden, Brett A; Sharma, Surendra P [NASA Ames Research Center, Moffett Field, CA 94035 (United States)

    2004-11-01

    A vertical cavity surface-emitting laser diode (VCSEL) was used as a spectrally tunable emission source for measurements of the radial-integrated gas temperature inside an inductively coupled plasma reactor. The data were obtained by profiling the Doppler-broadened absorption of metastable Ar atoms at 763.51 nm in argon and argon/nitrogen plasmas (3%, 45%, and 90% N{sub 2} in Ar) at pressures of 0.5-70 Pa and inductive powers of 100 and 300 W. The results were compared to the rotational temperature derived from the N{sub 2} emission at the (0,0) vibrational transition of the C {sup 3}{pi}{sub u}-B {sup 3}{pi} {sub g} system. The differences in integrated rotational and Doppler temperatures were attributed to non-uniform spatial distributions of both temperature and thermometric species (Ar{sup *} and N{sub 2}*) that varied depending on the conditions. A two-dimensional, three-temperature fluid plasma simulation was employed to explain these differences. This work should facilitate further development of a miniature sensor for non-intrusive acquisition of data (temperature and densities of multiple plasma species) during micro- and nano-fabrication plasma processing, thus enabling diagnostic-assisted continuous optimization and advanced control over the processes. Such sensors would also enable us to track the origins and pathways of damaging contaminants, thereby providing real-time feedback for adjustment of processes. Our work serves as an example of how two line-of-sight integrated temperatures derived from different thermometric species make it possible to characterize the radial non-uniformity of the plasma.

  9. Electrical characterisation of p-doped distributed Bragg reflectors in electrically pumped GaInNAs VCSOAs for 1.3 {mu}m operation

    Energy Technology Data Exchange (ETDEWEB)

    Chaqmaqchee, F.A.I. [University of Essex, School of Computer Science and Electronic Engineering Colchester, CO43SQ (United Kingdom); Mazzucato, S., E-mail: smazzu@essex.ac.uk [University of Essex, School of Computer Science and Electronic Engineering Colchester, CO43SQ (United Kingdom); Sun, Y.; Balkan, N. [University of Essex, School of Computer Science and Electronic Engineering Colchester, CO43SQ (United Kingdom); Tiras, E. [Anadolu University, Faculty of Science, Physics Department, Yunus Emre Campus 26470, Eskisehir (Turkey); Hugues, M.; Hopkinson, M. [University of Sheffield, Electronic and Electrical Engineering Department, S1 3JD (United Kingdom)

    2012-06-05

    Highlights: Black-Right-Pointing-Pointer We electrically characterised two p-type doped DBRs for 1.3 {mu}m VCSOA applications. Black-Right-Pointing-Pointer Abrupt and graded structures were designed and investigated. Black-Right-Pointing-Pointer Longitudinal and vertical transports were measured as function of temperature. Black-Right-Pointing-Pointer Low series resistivity achieved using the interface composition grading technique. Black-Right-Pointing-Pointer Theoretical model confirmed the obtained results. - Abstract: The high resistivity that is encountered in p-type DBRs is an important problem in vertical cavity surface emitting lasers and optical amplifiers (VCSELs and VCSOAs). This is because the formation of potential barriers at the interfaces between layers of high and low refractive index inhibits the carrier flow, thus increasing the DBR series resistance. In this work, the electrical characteristics of two p-type doped DBR structures grown on undoped and p-type doped GaAs substrates have been investigated. The DBRs are designed for VCSOAs operating at 1.3 {mu}m and consist of 14-periods of alternating GaAs and Al{sub 0.9}Ga{sub 0.1}As in the first sample and 14-periods of GaAs and Al{sub 0.3}Ga{sub 0.7}As/Al{sub 0.9}Ga{sub 0.1}As in the second one. For the longitudinal transport sample, Hall mobility and sheet carrier density were measured in the temperature range from 77 to 300 K. In the vertical transport sample, current-voltage (I-V) measurements across the DBR layers were carried out at different temperatures in the range between 15 and 300 K. We achieved resistivity reduction in our samples by using an interface composition grading technique aimed at improving the VCSOA characteristics.

  10. High-efficiency VCSEL arrays for illumination and sensing in consumer applications

    Science.gov (United States)

    Seurin, Jean-Francois; Zhou, Delai; Xu, Guoyang; Miglo, Alexander; Li, Daizong; Chen, Tong; Guo, Baiming; Ghosh, Chuni

    2016-03-01

    There has been increased interest in vertical-cavity surface-emitting lasers (VCSELs) for illumination and sensing in the consumer market, especially for 3D sensing ("gesture recognition") and 3D image capture. For these applications, the typical wavelength range of interest is 830~950nm and power levels vary from a few milli-Watts to several Watts. The devices are operated in short pulse mode (a few nano-seconds) with fast rise and fall times for time-of-flight applications (ToF), or in CW/quasi-CW for structured light applications. In VCSELs, the narrow spectrum and its low temperature dependence allows the use of narrower filters and therefore better signal-to-noise performance, especially for outdoor applications. In portable devices (mobile devices, wearable devices, laptops etc.) the size of the illumination module (VCSEL and optics) is a primary consideration. VCSELs offer a unique benefit compared to other laser sources in that they are "surface-mountable" and can be easily integrated along with other electronics components on a printed circuit board (PCB). A critical concern is the power-conversion efficiency (PCE) of the illumination source operating at high temperatures (>50 deg C). We report on various VCSEL based devices and diffuser-integrated modules with high efficiency at high temperatures. Over 40% PCE was achieved in broad temperature range of 0-70 °C for either low power single devices or high power VCSEL arrays, with sub- nano-second rise and fall time. These high power VCSEL arrays show excellent reliability, with extracted mean-time-to-failure (MTTF) of over 500 years at 60 °C ambient temperature and 8W peak output.

  11. Unmanned Aerial Systems for Monitoring Trace Tropospheric Gases

    Directory of Open Access Journals (Sweden)

    Travis J. Schuyler

    2017-10-01

    Full Text Available The emission of greenhouse gases (GHGs has changed the composition of the atmosphere during the Anthropocene. Accurately documenting the sources and magnitude of GHGs emission is an important undertaking for discriminating the contributions of different processes to radiative forcing. Currently there is no mobile platform that is able to quantify trace gases at altitudes <100 m above ground level that can achieve spatiotemporal resolution on the order of meters and seconds. Unmanned aerial systems (UASs can be deployed on-site in minutes and can support the payloads necessary to quantify trace gases. Therefore, current efforts combine the use of UASs available on the civilian market with inexpensively designed analytical systems for monitoring atmospheric trace gases. In this context, this perspective introduces the most relevant classes of UASs available and evaluates their suitability to operate three kinds of detectors for atmospheric trace gases. The three subsets of UASs discussed are: (1 micro aerial vehicles (MAVs; (2 vertical take-off and landing (VTOL; and, (3 low-altitude short endurance (LASE systems. The trace gas detectors evaluated are first the vertical cavity surface emitting laser (VCSEL, which is an infrared laser-absorption technique; second two types of metal-oxide semiconductor sensors; and, third a modified catalytic type sensor. UASs with wingspans under 3 m that can carry up to 5 kg a few hundred meters high for at least 30 min provide the best cost and convenience compromise for sensors deployment. Future efforts should be focused on the calibration and validation of lightweight analytical systems mounted on UASs for quantifying trace atmospheric gases. In conclusion, UASs offer new and exciting opportunities to study atmospheric composition and its effect on weather patterns and climate change.

  12. Handheld ultrahigh speed swept source optical coherence tomography instrument using a MEMS scanning mirror.

    Science.gov (United States)

    Lu, Chen D; Kraus, Martin F; Potsaid, Benjamin; Liu, Jonathan J; Choi, Woojhon; Jayaraman, Vijaysekhar; Cable, Alex E; Hornegger, Joachim; Duker, Jay S; Fujimoto, James G

    2013-12-20

    We developed an ultrahigh speed, handheld swept source optical coherence tomography (SS-OCT) ophthalmic instrument using a 2D MEMS mirror. A vertical cavity surface-emitting laser (VCSEL) operating at 1060 nm center wavelength yielded a 350 kHz axial scan rate and 10 µm axial resolution in tissue. The long coherence length of the VCSEL enabled a 3.08 mm imaging range with minimal sensitivity roll-off in tissue. Two different designs with identical optical components were tested to evaluate handheld OCT ergonomics. An iris camera aided in alignment of the OCT beam through the pupil and a manual fixation light selected the imaging region on the retina. Volumetric and high definition scans were obtained from 5 undilated normal subjects. Volumetric OCT data was acquired by scanning the 2.4 mm diameter 2D MEMS mirror sinusoidally in the fast direction and linearly in the orthogonal slow direction. A second volumetric sinusoidal scan was obtained in the orthogonal direction and the two volumes were processed with a software algorithm to generate a merged motion-corrected volume. Motion-corrected standard 6 x 6 mm(2) and wide field 10 x 10 mm(2) volumetric OCT data were generated using two volumetric scans, each obtained in 1.4 seconds. High definition 10 mm and 6 mm B-scans were obtained by averaging and registering 25 B-scans obtained over the same position in 0.57 seconds. One of the advantages of volumetric OCT data is the generation of en face OCT images with arbitrary cross sectional B-scans registered to fundus features. This technology should enable screening applications to identify early retinal disease, before irreversible vision impairment or loss occurs. Handheld OCT technology also promises to enable applications in a wide range of settings outside of the traditional ophthalmology or optometry clinics including pediatrics, intraoperative, primary care, developing countries, and military medicine.

  13. Solution-Grown CsPbBr3 /Cs4 PbBr6 Perovskite Nanocomposites: Toward Temperature-Insensitive Optical Gain.

    Science.gov (United States)

    Wang, Yue; Yu, Dejian; Wang, Zeng; Li, Xiaoming; Chen, Xiaoxuan; Nalla, Venkatram; Zeng, Haibo; Sun, Handong

    2017-09-01

    With regards to developing miniaturized coherent light sources, the temperature-insensitivity in gain spectrum and threshold is highly desirable. Quantum dots (QDs) are predicted to possess a temperature-insensitive threshold by virtue of the separated electronic states; however, it is never observed in colloidal QDs due to the poor thermal stability. Besides, for the classical II-VI QDs, the gain profile generally redshifts with increasing temperature, plaguing the device chromaticity. Herein, this paper addresses the above two issues simultaneously by embedding ligands-free CsPbBr 3 nanocrystals in a wider band gap Cs 4 PbBr 6 matrix by solution-phase synthesis. The unique electronic structures of CsPbBr 3 nanocrystals enable temperature-insensitive gain spectrum while the lack of ligands and protection from Cs 4 PbBr 6 matrix ensure the thermal stability and high temperature operation. Specifically, a color drift-free stimulated emission irrespective of temperature change (20-150 °C) upon two-photon pumping is presented and the characteristic temperature is determined to be as high as ≈260 K. The superior gain properties of the CsPbBr 3 /Cs 4 PbBr 6 perovskite nanocomposites are directly validated by a vertical cavity surface emitting laser operating at temperature as high as 100 °C. The results shed light on manipulating optical gain from the advantageous CsPbBr 3 nanocrystals and represent a significant step toward the temperature-insensitive frequency-upconverted lasers. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  14. Low-energy-consumption hybrid lasers for silicon photonics

    DEFF Research Database (Denmark)

    Chung, Il-Sug; Ran, Qijiang; Mørk, Jesper

    2012-01-01

    Physics and characteristics of a hybrid vertical-cavity laser that can be an on-chip Si light source with high speed and low energy consumption are discussed.......Physics and characteristics of a hybrid vertical-cavity laser that can be an on-chip Si light source with high speed and low energy consumption are discussed....

  15. Effect of External Optical Feedback for Nano-laser Structures

    DEFF Research Database (Denmark)

    Taghizadeh, Alireza; Mørk, Jesper; Chung, Il-Sug

    2013-01-01

    We theoretically investigated the effect of optical feedback on a photonic crystal nanolaser, comparing with conventional in-plane and vertical-cavity lasers.......We theoretically investigated the effect of optical feedback on a photonic crystal nanolaser, comparing with conventional in-plane and vertical-cavity lasers....

  16. Ultra-wideband WDM VCSEL arrays by lateral heterogeneous integration

    Science.gov (United States)

    Geske, Jon

    Advancements in heterogeneous integration are a driving factor in the development of evermore sophisticated and functional electronic and photonic devices. Such advancements will merge the optical and electronic capabilities of different material systems onto a common integrated device platform. This thesis presents a new lateral heterogeneous integration technology called nonplanar wafer bonding. The technique is capable of integrating multiple dissimilar semiconductor device structures on the surface of a substrate in a single wafer bond step, leaving different integrated device structures adjacent to each other on the wafer surface. Material characterization and numerical simulations confirm that the material quality is not compromised during the process. Nonplanar wafer bonding is used to fabricate ultra-wideband wavelength division multiplexed (WDM) vertical-cavity surface-emitting laser (VCSEL) arrays. The optically-pumped VCSEL arrays span 140 nm from 1470 to 1610 nm, a record wavelength span for devices operating in this wavelength range. The array uses eight wavelength channels to span the 140 nm with all channels separated by precisely 20 nm. All channels in the array operate single mode to at least 65°C with output power uniformity of +/- 1 dB. The ultra-wideband WDM VCSEL arrays are a significant first step toward the development of a single-chip source for optical networks based on coarse WDM (CWDM), a low-cost alternative to traditional dense WDM. The CWDM VCSEL arrays make use of fully-oxidized distributed Bragg reflectors (DBRs) to provide the wideband reflectivity required for optical feedback and lasing across 140 rim. In addition, a novel optically-pumped active region design is presented. It is demonstrated, with an analytical model and experimental results, that the new active-region design significantly improves the carrier uniformity in the quantum wells and results in a 50% lasing threshold reduction and a 20°C improvement in the peak

  17. Self-assembled InAs/InP quantum dots and quantum dashes: Material structures and devices

    KAUST Repository

    Khan, Mohammed Zahed Mustafa; Ng, Tien Khee; Ooi, Boon S.

    2014-01-01

    The advances in lasers, electronic and photonic integrated circuits (EPIC), optical interconnects as well as the modulation techniques allow the present day society to embrace the convenience of broadband, high speed internet and mobile network connectivity. However, the steep increase in energy demand and bandwidth requirement calls for further innovation in ultra-compact EPIC technologies. In the optical domain, advancement in the laser technologies beyond the current quantum well (Qwell) based laser technologies are already taking place and presenting very promising results. Homogeneously grown quantum dot (Qdot) lasers and optical amplifiers, can serve in the future energy saving information and communication technologies (ICT) as the work-horse for transmitting and amplifying information through optical fiber. The encouraging results in the zero-dimensional (0D) structures emitting at 980 nm, in the form of vertical cavity surface emitting laser (VCSEL), are already operational at low threshold current density and capable of 40 Gbps error-free transmission at 108 fJ/bit. Subsequent achievements for lasers and amplifiers operating in the O-, C-, L-, U-bands, and beyond will eventually lay the foundation for green ICT. On the hand, the inhomogeneously grown quasi 0D quantum dash (Qdash) lasers are brilliant solutions for potential broadband connectivity in server farms or access network. A single broadband Qdash laser operating in the stimulated emission mode can replace tens of discrete narrow-band lasers in dense wavelength division multiplexing (DWDM) transmission thereby further saving energy, cost and footprint. We herein reviewed the1 progress of both Qdots and Qdash devices, based on the InAs/InGaAlAs/InP and InAs/InGaAsP/InP material systems, from the angles of growth and device performance. In particular, we discussed the progress in lasers, semiconductor optical amplifiers (SOA), mode locked lasers, and superluminescent diodes, which are the building

  18. (AlGaIn)(AsPSb)-based heterostructures for light emission in the range of 1.3-3.5 μm; (AlGaIn)(AsPSb)-basierte Heterostrukturen fuer Lichtemission im Bereich von 1.3-3.5 μm

    Energy Technology Data Exchange (ETDEWEB)

    Grasse, Christian

    2014-08-15

    In this work, (AlGaIn)(AsPSb)-based heterostructures were crystalline grown on InP substrates by low pressure Metal Organic Vapor Phase Epitaxy (MOVPE). To demonstrate electrically pumped emission in the wavelength range from 1.3 μm to 3.5 μm, these structures are implemented into Vertical-Cavity Surface-Emitting Lasers (VCSEL) and Resonant-Cavity Light Emitting Diodes (RC-LED). Since the type-II GaAsSb/GaInAs-based tunnel diode has a sheet resistance of only 7 x 10{sup -7} Ωcm{sup 2}, the complete SC-VCSEL has an electrical resistance of just 24 Ω at a BTJ-diameter of 8 μm. Due to the resulting low parasitics (RC-constants) and the SC-design the first realized SC-VCSEL already achieved a high modulations bandwidth of 7.5 GHz, enabling ultrafast data transmission speeds of 10 Gbit/s. The emitted wavelength of 1.3 μm with a sidemode suppression ratio (SMSR) of more than 30 dB and an output power in the milliwatt range (continuous wave) are appropriate for Fiber to the home (FTTH) applications. The type-II band alignment of the GaAsSb/GaInAs heterostructure also offered the possibility to expand the accessible emission wavelength of InP-based devices into the mid-infrared. To accomplish this task, two different design concepts were implemented as active regions into RC-LEDs. The ''Superlattice'' design consisted of periods of GaAsSb/GaInAs, while the ''W'' design used periods of GaInAs/GaAsSb/GaInAs with an additional barrier layer. Here a tradeoff is given between low quantization energy (thick quantum wells) and high wavefunction overlap (thin quantum wells). By applying high crystalline strain this tradeoff has been avoided. This allows electroluminescence at 3.5 μm with continuous wave operation up to a heat sink temperature of 80 C. Due to the wavefunction decoupling caused by using thick barriers, the type-II active region of the '' W'' design has a smaller linewidth than that of the &apos

  19. Final Scientific/Technical Report. A closed path methane and water vapor gas analyzer

    Energy Technology Data Exchange (ETDEWEB)

    Xu, Liukang [LI-COR Inc., Lincoln, NE (United States); McDermitt, Dayle [LI-COR Inc., Lincoln, NE (United States); Anderson, Tyler [LI-COR Inc., Lincoln, NE (United States); Riensche, Brad [LI-COR Inc., Lincoln, NE (United States); Komissarov, Anatoly [LI-COR Inc., Lincoln, NE (United States); Howe, Julie [LI-COR Inc., Lincoln, NE (United States)

    2012-02-01

    Robust, economical, low-power and reliable closed-path methane (CH4), carbon dioxide (CO2), and water vapor (H2O) analyzers suitable for long-term measurements are not readily available commercially. Such analyzers are essential for quantifying the amount of CH4 and CO2 released from various ecosystems (wetlands, rice paddies, forests, etc.) and other surface contexts (e.g. landfills, animal husbandry lots, etc.), and for understanding the dynamics of the atmospheric CH4 and CO2 budget and their impact on climate change and global warming. The purpose of this project is to develop a closed-path methane, carbon dioxide gas and water vapor analyzer capable of long-term measurements in remote areas for global climate change and environmental research. The analyzer will be capable of being deployed over a wide range of ecosystems to understand methane and carbon dioxide exchange between the atmosphere and the surface. Measurements of methane and carbon dioxide exchange need to be made all year-round with limited maintenance requirements. During this Phase II effort, we successfully completed the design of the electronics, optical bench, trace gas detection method and mechanical infrastructure. We are using the technologies of two vertical cavity surface emitting lasers, a multiple-pass Herriott optical cell, wavelength modulation spectroscopy and direct absorption to measure methane, carbon dioxide, and water vapor. We also have designed the instrument application software, Field Programmable Gate Array (FPGA), along with partial completion of the embedded software. The optical bench has been tested in a lab setting with very good results. Major sources of optical noise have been identified and through design, the optical noise floor is approaching -60dB. Both laser modules can be temperature controlled to help maximize the stability of the analyzer. Additionally, a piezo electric transducer has been

  20. Optical Multi-Gas Monitor Technology Demonstration on the International Space Station

    Science.gov (United States)

    Pilgrim, Jeffrey S.; Wood, William R.; Casias, Miguel E.; Vakhtin, Andrei B,; Johnson, Michael D.; Mudgett, Paul D.

    2014-01-01

    There are a variety of both portable and fixed gas monitors onboard the International Space Station (ISS). Devices range from rack-mounted mass spectrometers to hand-held electrochemical sensors. An optical Multi-Gas Monitor has been developed as an ISS Technology Demonstration to evaluate long-term continuous measurement of 4 gases. Based on tunable diode laser spectroscopy, this technology offers unprecedented selectivity, concentration range, precision, and calibration stability. The monitor utilizes the combination of high performance laser absorption spectroscopy with a rugged optical path length enhancement cell that is nearly impossible to misalign. The enhancement cell serves simultaneously as the measurement sampling cell for multiple laser channels operating within a common measurement volume. Four laser diode based detection channels allow quantitative determination of ISS cabin concentrations of water vapor (humidity), carbon dioxide, ammonia and oxygen. Each channel utilizes a separate vertical cavity surface emitting laser (VCSEL) at a different wavelength. In addition to measuring major air constituents in their relevant ranges, the multiple gas monitor provides real time quantitative gaseous ammonia measurements between 5 and 20,000 parts-per-million (ppm). A small ventilation fan draws air with no pumps or valves into the enclosure in which analysis occurs. Power draw is only about 3 W from USB sources when installed in Nanoracks or when connected to 28V source from any EXPRESS rack interface. Internal battery power can run the sensor for over 20 hours during portable operation. The sensor is controlled digitally with an FPGA/microcontroller architecture that stores data internally while displaying running average measurements on an LCD screen and interfacing with the rack or laptop via USB. Design, construction and certification of the Multi-Gas Monitor were a joint effort between Vista Photonics, Nanoracks and NASA-Johnson Space Center (JSC

  1. Self-assembled InAs/InP quantum dots and quantum dashes: Material structures and devices

    KAUST Repository

    Khan, Mohammed Zahed Mustafa

    2014-11-01

    The advances in lasers, electronic and photonic integrated circuits (EPIC), optical interconnects as well as the modulation techniques allow the present day society to embrace the convenience of broadband, high speed internet and mobile network connectivity. However, the steep increase in energy demand and bandwidth requirement calls for further innovation in ultra-compact EPIC technologies. In the optical domain, advancement in the laser technologies beyond the current quantum well (Qwell) based laser technologies are already taking place and presenting very promising results. Homogeneously grown quantum dot (Qdot) lasers and optical amplifiers, can serve in the future energy saving information and communication technologies (ICT) as the work-horse for transmitting and amplifying information through optical fiber. The encouraging results in the zero-dimensional (0D) structures emitting at 980 nm, in the form of vertical cavity surface emitting laser (VCSEL), are already operational at low threshold current density and capable of 40 Gbps error-free transmission at 108 fJ/bit. Subsequent achievements for lasers and amplifiers operating in the O-, C-, L-, U-bands, and beyond will eventually lay the foundation for green ICT. On the hand, the inhomogeneously grown quasi 0D quantum dash (Qdash) lasers are brilliant solutions for potential broadband connectivity in server farms or access network. A single broadband Qdash laser operating in the stimulated emission mode can replace tens of discrete narrow-band lasers in dense wavelength division multiplexing (DWDM) transmission thereby further saving energy, cost and footprint. We herein reviewed the1 progress of both Qdots and Qdash devices, based on the InAs/InGaAlAs/InP and InAs/InGaAsP/InP material systems, from the angles of growth and device performance. In particular, we discussed the progress in lasers, semiconductor optical amplifiers (SOA), mode locked lasers, and superluminescent diodes, which are the building

  2. (AlGaIn)(AsPSb)-based heterostructures for light emission in the range of 1.3-3.5 μm

    International Nuclear Information System (INIS)

    Grasse, Christian

    2014-01-01

    In this work, (AlGaIn)(AsPSb)-based heterostructures were crystalline grown on InP substrates by low pressure Metal Organic Vapor Phase Epitaxy (MOVPE). To demonstrate electrically pumped emission in the wavelength range from 1.3 μm to 3.5 μm, these structures are implemented into Vertical-Cavity Surface-Emitting Lasers (VCSEL) and Resonant-Cavity Light Emitting Diodes (RC-LED). Since the type-II GaAsSb/GaInAs-based tunnel diode has a sheet resistance of only 7 x 10 -7 Ωcm 2 , the complete SC-VCSEL has an electrical resistance of just 24 Ω at a BTJ-diameter of 8 μm. Due to the resulting low parasitics (RC-constants) and the SC-design the first realized SC-VCSEL already achieved a high modulations bandwidth of 7.5 GHz, enabling ultrafast data transmission speeds of 10 Gbit/s. The emitted wavelength of 1.3 μm with a sidemode suppression ratio (SMSR) of more than 30 dB and an output power in the milliwatt range (continuous wave) are appropriate for Fiber to the home (FTTH) applications. The type-II band alignment of the GaAsSb/GaInAs heterostructure also offered the possibility to expand the accessible emission wavelength of InP-based devices into the mid-infrared. To accomplish this task, two different design concepts were implemented as active regions into RC-LEDs. The ''Superlattice'' design consisted of periods of GaAsSb/GaInAs, while the ''W'' design used periods of GaInAs/GaAsSb/GaInAs with an additional barrier layer. Here a tradeoff is given between low quantization energy (thick quantum wells) and high wavefunction overlap (thin quantum wells). By applying high crystalline strain this tradeoff has been avoided. This allows electroluminescence at 3.5 μm with continuous wave operation up to a heat sink temperature of 80 C. Due to the wavefunction decoupling caused by using thick barriers, the type-II active region of the '' W'' design has a smaller linewidth than that of the ''Superlattice''-design. Reduced wavefunction overlap compared to type-I quantum

  3. Calibration and Field Deployment of the NSF G-V VCSEL Hygrometer

    Science.gov (United States)

    DiGangi, J. P.; O'Brien, A.; Diao, M.; Hamm, C.; Zhang, Q.; Beaton, S. P.; Zondlo, M. A.

    2012-12-01

    Cloud formation and dynamics have a significant influence on the Earth's radiative forcing budget, which illustrates the importance of clouds with respect to global climate. Therefore, an accurate understanding of the microscale processes dictating cloud formation is crucial for accurate computer modeling of global climate change. A critical tool for understanding these processes from an airborne platform is an instrument capable of measuring water vapor with both high accuracy and time, thus spatial, resolution. Our work focuses on an open-path, compact, vertical-cavity surface-emitting laser (VCSEL) absorption-based hygrometer, capable of 25 Hz temporal resolution, deployed on the NSF/NCAR Gulfstream-V aircraft platform. The open path nature of our instrument also helps to minimize sampling artifacts. We will discuss our efforts toward achieving within 5% accuracy over 5 orders of magnitude of water vapor concentrations. This involves an intercomparison of five independent calibration methods: ice surface saturators using an oil temperature bath, solvent slush baths (e.g. chloroform/LN2, water/ice), a research-grade frost point hygrometer, static pressure experiments, and Pt catalyzed hydrogen gas. This wide variety of available tools allows us to accurately constrain the calibrant water vapor concentrations both before and after the VCSEL hygrometer sampling chamber. For example, the mixing ratio as measured by research-grade frost point hygrometer after the VCSEL hygrometer agreed within 2% of the mixing ration expected from the water/ice bubbler source before the VCSEL over the temperature range -50°C to 20°C. Finally, due to the compact nature of our instrument, we are able to perform these calibrations simultaneously at the same temperatures (-80°C to 30°C) and pressures (150 mbar to 760 mbar) as sampled ambient air during a flight. This higher accuracy can significantly influence the science utilizing this data, which we will illustrate using

  4. Miniature and low cost fiber Bragg grating interrogator for structural monitoring in nano-satellites

    Science.gov (United States)

    Toet, P. M.; Hagen, R. A. J.; Hakkesteegt, H. C.; Lugtenburg, J.; Maniscalco, M. P.

    2017-11-01

    In this paper we present a newly developed Fiber Optic measurement system, consisting of Fiber Bragg Grating (FBG) sensors and an FBG interrogator. The development of the measuring system is part of the PiezoElectric Assisted Smart Satellite Structure (PEASSS) project, which was initiated at the beginning of 2013 and is financed by the Seventh Framework Program (FP7) of the European Commission. Within the PEASSS project, a Nano-Satellite is being designed and manufactured to be equipped with new technology that will help keep Europe on the cutting edge of space research, potentially reducing the cost and development time for more accurate future sensor platforms including synthetic aperture optics, moving target detection and identification, and compact radars. After on ground testing the satellite is planned to be launched at the end of 2015. Within the satellite, different technologies will be demonstrated on orbit to show their capabilities for different in-space applications. For our application the FBG interrogator monitors the structural and thermal behaviour of a so called "smart panel". These panels will enable fine angle control and thermal and vibration compensation in order to improve all types of future Earth observations, such as environmental and planetary mapping, border and regional imaging. The Fiber Optic (FO) system in PEASSS includes four FBG strain sensors and two FBG temperature sensors. The 3 channel interrogator has to have a small footprint (110x50x40mm), is low cost, low in mass and has a low power consumption. In order to meet all these requirements, an interrogator has been designed based on a tunable Vertical-Cavity Surface-Emitting Laser (VCSEL) enabling a wavelength sweep of around 7 nm. To guarantee the absolute and relative performance, two reference methods are included internally in the interrogator. First, stabilized reference FBG sensors are used to obtain absolute wavelength calibrations. This method is used for the temperature

  5. Current status of AlInN layers lattice-matched to GaN for photonics and electronics

    International Nuclear Information System (INIS)

    Butte, R; Carlin, J-F; Feltin, E; Gonschorek, M; Nicolay, S; Christmann, G; Simeonov, D; Castiglia, A; Dorsaz, J; Buehlmann, H J; Christopoulos, S; Hoegersthal, G Baldassarri Hoeger von; Grundy, A J D; Mosca, M; Pinquier, C; Py, M A; Demangeot, F; Frandon, J; Lagoudakis, P G; Baumberg, J J; Grandjean, N

    2007-01-01

    We report on the current properties of Al 1-x In x N (x ∼ 0.18) layers lattice-matched (LM) to GaN and their specific use to realize nearly strain-free structures for photonic and electronic applications. Following a literature survey of the general properties of AlInN layers, structural and optical properties of thin state-of-the-art AlInN layers LM to GaN are described showing that despite improved structural properties these layers are still characterized by a typical background donor concentration of (1-5) x 10 18 cm -3 and a large Stokes shift (∼800 meV) between luminescence and absorption edge. The use of these AlInN layers LM to GaN is then exemplified through the properties of GaN/AlInN multiple quantum wells (QWs) suitable for near-infrared intersubband applications. A built-in electric field of 3.64 MV cm -1 solely due to spontaneous polarization is deduced from photoluminescence measurements carried out on strain-free single QW heterostructures, a value in good agreement with that deduced from theoretical calculation. Other potentialities regarding optoelectronics are demonstrated through the successful realization of crack-free highly reflective AlInN/GaN distributed Bragg reflectors (R > 99%) and high quality factor microcavities (Q > 2800) likely to be of high interest for short wavelength vertical light emitting devices and fundamental studies on the strong coupling regime between excitons and cavity photons. In this respect, room temperature (RT) lasing of a LM AlInN/GaN vertical cavity surface emitting laser under optical pumping is reported. A description of the selective lateral oxidation of AlInN layers for current confinement in nitride-based light emitting devices and the selective chemical etching of oxidized AlInN layers is also given. Finally, the characterization of LM AlInN/GaN heterojunctions will reveal the potential of such a system for the fabrication of high electron mobility transistors through the report of a high two

  6. INTRODUCTION: Surface Dynamics, Phonons, Adsorbate Vibrations and Diffusion

    Science.gov (United States)

    Bruch, L. W.

    2004-07-01

    understanding of the underlying factors determining the optical quality of GaInNAs, such as composition, growth and annealing conditions. We are still far from establishing an understanding of the band structure and its dependence on composition. Fundamental electronic interactions such as electron-electron and electron-phonon scattering, dependence of effective mass on composition, strain and orientation, quantum confinement effects, effects of localized nitrogen states on high field transport and on galvanometric properties, and mechanisms for light emission in these materials, are yet to be fully understood. Nature and formation mechanisms of grown-in and processing-induced defects that are important for material quality and device performance are still unknown. Such knowledge is required in order to design strategies to efficiently control and eliminate harmful defects. For many potential applications (such as solar cells, HBTs) it is essential to get more information on the transport properties of dilute nitride materials. The mobility of minority carriers is known to be low in GaInNAs and related material. The experimental values are far from reaching the theoretical ones, due to defects and impurities introduced in the material during the growth. The role of the material inhomogeneities on the lateral carrier transport also needs further investigation. From the device's point of view most attention to date has been focused on the GaInNAs/GaAs system, mainly because of its potential for optoelectronic devices covering the 1.3-1.55 µm data and telecommunications wavelength bands. As is now widely appreciated, these GaAs-compatible structures allow monolithic integration of AlGaAs-based distributed Bragg reflector mirrors (DBRs) for vertical cavity surface-emitting lasers with low temperature sensitivity and compatibility with AlOx-based confinement techniques. In terms of conventional edge-emitting lasers (EELs), the next step is to extend the wavelength range for cw room

  7. Compact Optical Technique for Streak Camera Calibration

    International Nuclear Information System (INIS)

    Bell, P; Griffith, R; Hagans, K; Lerche, R; Allen, C; Davies, T; Janson, F; Justin, R; Marshall, B; Sweningsen, O

    2004-01-01

    to a streak camera just before and at shot time to verify that the streak camera sweep unit is functioning properly. A comb signal applied at shot time does not have the statistical quality of the multiple recordings used to calibrate a streak camera time base. However, it does allow the user to verify that the correct sweep card is installed and that it is functioning within about 1.5% of its expected speed2. The principle component in the comb generator is a custom packaged Vertical Cavity Surface Emitting Laser (VCSEL), Figure 2. The laser is modulated either directly by a crystal controlled sine wave oscillator or by an impulse generator that is supplied by the oscillator, Figure 3. A pulse bias is added to the sine wave or impulse input to bring the VCSEL to lasing for the time interval that the optical comb train is required. The pulse bias can be used to adjust the intensity of the optical pulse train. An example of a 3 GHz comb streak is shown in Figure 4(a)

  8. High-Efficiency Nitride-Based Solid-State Lighting. Final Technical Progress Report

    International Nuclear Information System (INIS)

    Paul T. Fini; Shuji Nakamura

    2005-01-01

    In this final technical progress report we summarize research accomplished during Department of Energy contract DE-FC26-01NT41203, entitled ''High-Efficiency Nitride-Based Solid-State Lighting''. Two teams, from the University of California at Santa Barbara (Principle Investigator: Dr. Shuji Nakamura) and the Lighting Research Center at Rensselaer Polytechnic Institute (led by Dr. N. Narendran), pursued the goals of this contract from thin film growth, characterization, and packaging/luminaire design standpoints. The UCSB team initially pursued the development of blue gallium nitride (GaN)-based vertical-cavity surface-emitting lasers, as well as ultraviolet GaN-based light emitting diodes (LEDs). In Year 2, the emphasis shifted to resonant-cavity light emitting diodes, also known as micro-cavity LEDs when extremely thin device cavities are fabricated. These devices have very directional emission and higher light extraction efficiency than conventional LEDs. Via the optimization of thin-film growth and refinement of device processing, we decreased the total cavity thickness to less than 1 (micro)m, such that micro-cavity effects were clearly observed and a light extraction efficiency of over 10% was reached. We also began the development of photonic crystals for increased light extraction, in particular for so-called ''guided modes'' which would otherwise propagate laterally in the device and be re-absorbed. Finally, we pursued the growth of smooth, high-quality nonpolar a-plane and m-plane GaN films, as well as blue light emitting diodes on these novel films. Initial nonpolar LEDs showed the expected behavior of negligible peak wavelength shift with increasing drive current. M-plane LEDs in particular show promise, as unpackaged devices had unsaturated optical output power of ∼ 3 mW at 200 mA drive current. The LRC's tasks were aimed at developing the subcomponents necessary for packaging UCSB's light emitting diodes, and packaging them to produce a white light

  9. LOW-POWER SOLUTION FOR EDDY COVARIANCE MEASUREMENTS OF METHANE FLUX

    Science.gov (United States)

    Anderson, T.; Burba, G. G.; Komissarov, A.; McDermitt, D. K.; Xu, L.; Zona, D.; Oechel, W. C.; Schedlbauer, J. L.; Oberbauer, S. F.; Riensche, B.; Allyn, D.

    2009-12-01

    Open-path analyzers offer a number of advantages for measuring methane fluxes, including undisturbed in-situ flux measurements, spatial integration using the Eddy Covariance approach, zero frequency response errors due to tube attenuation, confident water and thermal density terms from co-located fast measurements of water and sonic temperature, and possibility of remote and mobile solar-powered or small-generator-powered deployments due to lower power demands in the absence of a pump. The LI-7700 open-path methane analyzer is a VCSEL (vertical-cavity surface-emitting laser)-based instrument. It employs an open Herriott cell and measures levels of methane with RMS noise below 5 ppb at 10 Hz sampling in controlled laboratory conditions. The power consumption of the stand-alone LI-7700 in steady-state is about 8W, so it can be deployed in any methane-generating location of interest on a portable or mobile solar-powered tower, and it does not have to have grid power or permanent industrial generator. Eddy Covariance measurements of methane flux using the LI-7700 open-path methane analyzer were conducted in 2006-2009 in five ecosystems with contrasting weather and moisture conditions: (1) sawgrass wetland in the Florida Everglades; (2) coastal wetlands in an Arctic tundra; and (3) pacific mangroves in Mexico; (4) maize field and (5) ryegrass field in Nebraska. Methane co-spectra behaved in a manner similar to that of the co-spectra of carbon dioxide, water vapor, and air temperature, demonstrating that the LI-7700 adequately measured fluctuations in methane concentration across the whole spectrum of frequencies contributing to vertical atmospheric turbulent transport at the experimental sites. All co-spectra also closely followed the Kaimal model, and demonstrated good agreement with another methane co-spectrum obtained with a TDLS (Tunable Diode Laser Spectroscope; Unisearch Associates, Inc.) over a peatland. Overall, hourly methane fluxes ranged from near-zero at

  10. High-Efficiency Nitride-Based Solid-State Lighting

    Energy Technology Data Exchange (ETDEWEB)

    Paul T. Fini; Shuji Nakamura

    2005-07-30

    In this final technical progress report we summarize research accomplished during Department of Energy contract DE-FC26-01NT41203, entitled ''High-Efficiency Nitride-Based Solid-State Lighting''. Two teams, from the University of California at Santa Barbara (Principle Investigator: Dr. Shuji Nakamura) and the Lighting Research Center at Rensselaer Polytechnic Institute (led by Dr. N. Narendran), pursued the goals of this contract from thin film growth, characterization, and packaging/luminaire design standpoints. The UCSB team initially pursued the development of blue gallium nitride (GaN)-based vertical-cavity surface-emitting lasers, as well as ultraviolet GaN-based light emitting diodes (LEDs). In Year 2, the emphasis shifted to resonant-cavity light emitting diodes, also known as micro-cavity LEDs when extremely thin device cavities are fabricated. These devices have very directional emission and higher light extraction efficiency than conventional LEDs. Via the optimization of thin-film growth and refinement of device processing, we decreased the total cavity thickness to less than 1 {micro}m, such that micro-cavity effects were clearly observed and a light extraction efficiency of over 10% was reached. We also began the development of photonic crystals for increased light extraction, in particular for so-called ''guided modes'' which would otherwise propagate laterally in the device and be re-absorbed. Finally, we pursued the growth of smooth, high-quality nonpolar a-plane and m-plane GaN films, as well as blue light emitting diodes on these novel films. Initial nonpolar LEDs showed the expected behavior of negligible peak wavelength shift with increasing drive current. M-plane LEDs in particular show promise, as unpackaged devices had unsaturated optical output power of {approx} 3 mW at 200 mA drive current. The LRC's tasks were aimed at developing the subcomponents necessary for packaging UCSB's light

  11. Quantitative Measurement of Oxygen in Microgravity Combustion

    Science.gov (United States)

    Silver, Joel A.

    1997-01-01

    water vapor mole fractions in the NASA Lewis 2.2-sec Drop Tower. In that system, the laser and all electronics resided at the top of the drop tower and was connected via a fiber optic cable to the rig, on which a 'pitch and catch' set of fiber collimating lenses were used to transmit the laser beam across a jet diffusion flame. This system required eight independent detection/demodulation units and had poor spatial resolution. This research builds on this earlier work, resulting in an improved capability for quantitative, nonintrusive measurement of major combustion species. A vertical cavity surface-emitting diode laser (VCSEL) and a continuous spatial scanning method permit the measurement of temporal and spatial profiles of the concentrations and temperatures of molecular oxygen. High detection sensitivity is achieved with wavelength modulation spectroscopy (WMS). One-g experiments are performed using a slot diffusion flame. Microgravity measurements on a solid fuel (cellulose sheet) system are planned for the NASA Lewis 2.2-second Drop Tower Facility.

  12. Parallel interconnect for a novel system approach to short distance high information transfer data links

    Science.gov (United States)

    Raskin, Glenn; Lebby, Michael S.; Carney, F.; Kazakia, M.; Schwartz, Daniel B.; Gaw, Craig A.

    1997-04-01

    architecture uses AlGaAs vertical cavity surface emitting lasers (VCSELs) at 850 nm in conjunction with unique opto-electronic packaging concepts. Most laser based transmitter subsystems are incapable of carrying an arbitrary NRZ data stream at high data rates. The receiver subsystem utilizes a conventional GaAs PIN photo-detector. In parallel interconnect systems. The design must take into account the simultaneous switching noise from the neighboring systems. If not well controlled, the high density of the multiple interconnects can limit the sensitivity and therefore the performance of the system. The packaging approach of the VCSEL and PIN arrays allow for high bandwidths and provide the coupling mechanisms necessary to interface to the 62.5 micrometer multi mode fiber. To allow for extremely high electrical signals the OPTOBUSTM package utilizes a multilayer tape automated bonded (TAB) lead frame. The lead frame contains separate signal and ground layers. The ground layer successfully provides for a pseudo-coaxial environment (low inductance and effective signal coupling to the ground plane).

  13. Fabrication of a novel gigabit/second free-space optical interconnect - photodetector characterization and testing and system development

    Science.gov (United States)

    Savich, Gregory R.

    2004-01-01

    The time when computing power is limited by the copper wire inherent in the computer system and not the speed of the microprocessor is rapidly approaching. With constant advances in computer technology, many researchers believe that in only a few years, optical interconnects will begin to replace copper wires in your Central Processing Unit (CPU). On a more macroscopic scale, the telecommunications industry has already made the switch to optical data transmission as, to date, fiber optic technology is the only reasonable method of reliable, long range data transmission. Within the span of a decade, we will see optical technologies move from the macroscopic world of the telecommunications industry to the microscopic world of the computer chip. Already, the communications industry is marketing commercially available optical links to connect two personal computers, thereby eliminating the need for standard and comparatively slow wired and wireless Ethernet transfers and greatly increasing the distance the computers can be separated. As processing demands continue to increase, the realm of optical communications will continue to move closer to the microprocessor and quite possibly onto the microprocessor itself. A day may come when copper connections are used only to supply power, not transfer data. This summer s work marks some of the beginning stages of a 5 to 10 year, long-term research project to create and study a free-space, 1 Gigabit/sec optical interconnect. The research will result in a novel fabricated, chip-to-chip interconnect consisting of a Vertical Cavity Surface Emitting Laser (VCSEL) Diode linked through free space to a Metal- Semiconductor-Metal (MSM) Photodetector with the possible integration of microlenses for signal focusing and Micro-Electromechanical Systems (MEMS) devices for optical signal steering. The advantages, disadvantages, and practicality of incorporating flip-chip mounting technologies will also be addressed. My work began with the

  14. A critical analysis of radiation-matter interaction

    International Nuclear Information System (INIS)

    Milani, M.; Previdi, F.

    2000-01-01

    of realistically complex active devices. Finally, a CA model will be proposed for the cooperative effects in phase-locked arrays of Vertical Cavity Surface Emitting Lasers (VCSELs) when provides predictions of near-field and far-field emission patterns. In sect. 7 it shall be seen how the CA approach permits, also in a case of biological interest in the field of cell morphogenesis, to investigate the role of the intracellular electromagnetic field in cytoskeleton structure formation through the simulation of the propagation of an electromagnetic field in a solution of proteins. The ensuing CA model results from a refinement of the previous semiconductor laser model obtained by means of the introduction of the effects of the ponderomotive force and of thermally induced random hydrodynamic flows present in cytoplasm. It will be seen how the simulation of the whole process of interaction allows to follow the formation and dynamics of the filamentary structures comprising cytoskeleton, and how it enables to make the non-linearity of the solution emerge from the effects of the ponderomotive force acting on biomolecules. Since the proposed approach has proved to be successful, it seems reasonable to extend it to the case of more complex systems and physical processes, that are currently out of reach in standard approaches, such as four-wave mixing elementary processes in laser-plasma interaction, lasers with optical feedback and to other situations that are of interest even out of the strict field of physics such as the competition among biological species in ecosystems. A survey of these possible extensions is presented in sect. 8 together with the conclusions

  15. Ultrabroadband Hybrid III-V/SOI Grating Reflector for On-chip Lasers

    DEFF Research Database (Denmark)

    Park, Gyeong Cheol; Taghizadeh, Alireza; Chung, Il-Sug

    2016-01-01

    We report on a new type of III-V/SOI grating reflector with a broad stopband of 350 nm. This reflector has promising prospects for applications in high-speed III-V/SOI vertical cavity lasers with an improved heat dissipation capability.......We report on a new type of III-V/SOI grating reflector with a broad stopband of 350 nm. This reflector has promising prospects for applications in high-speed III-V/SOI vertical cavity lasers with an improved heat dissipation capability....

  16. All-optical packet envelope detection using a slow semiconductor saturable absorber gate and a semiconductor optical amplifier

    NARCIS (Netherlands)

    Porzi, C.; Fresi, F.; Poti, L.; Bogoni, A.; Guina, M.; Orsila, L.; Okhotnikov, O.; Calabretta, N.

    2008-01-01

    Abstract—We propose a simple and effective scheme for alloptical packet envelope detection (AO-PED), exploiting a slow saturable absorber-based vertical cavity semiconductor gate and a semiconductor optical amplifier. A high extinction ratio of 15 dB was measured for the recovered envelope signal.

  17. 1-W quasi-cw near-diffraction-limited semiconductor laser pumped optically by a fibre-coupled diode bar

    OpenAIRE

    Dhanjal, S.; Hoogland, S.; Roberts, J.S.; Hayward, R.A.; Clarkson, W.A.; Tropper, Anne

    2000-01-01

    We describe a diode-bar-pumped vertical-external-cavity surface-emitting semiconductor laser, which in quasi-cw operation emitted a peak power of >1 W at 1020 nm in a circular, near diffraction-limited beam.

  18. NUMERICAL MODELING OF CONJUGATE HEAT TRANSFER IN AN INSULATED GLASS UNIT (IGU WITH ACCOUNT FOR ITS DEFORMATION

    Directory of Open Access Journals (Sweden)

    Golubev Stanislav Sergeevich

    2012-12-01

    The effects of different climatic impacts lead to the deformation of glasses within an IGU (and its vertical cavity, respectively. Deformation of glasses and vertical cavities reduces the thermal resistance of an IGU. A numerical simulation of conjugate heat transfer within an IGU was implemented as part of the research into this phenomenon. Calculations were performed in ANSYS FLUENT CFD package. Basic equations describing the conservation of mass, conservation of momentum (in the Boussinesq approximation, conservation of energy were solved. Also, the radiation of the cavity wall was taken into account. Vertical walls were considered as non-isothermal, while horizontal walls were adiabatic. Calculations were made for several patterns of glass deformations. Calculation results demonstrate that the heat flow over vertical walls intensifies as the distance between centres of IGU glasses is reduced. The temperature in the central area of the hot glass drops.

  19. Solid state microcavity dye lasers fabricated by nanoimprint lithography

    DEFF Research Database (Denmark)

    Nilsson, Daniel; Nielsen, Theodor; Kristensen, Anders

    2004-01-01

    propagating TE–TM modes. The laser cavity has the lateral shape of a trapezoid, supporting lasing modes by reflection on the vertical cavity walls. The solid polymer dye lasers emit laterally through one of the vertical cavity walls, when pumped optically through the top surface by means of a frequency...... doubled, pulsed Nd:YAG laser. Lasing in the wavelength region from 560 to 570 nm is observed from a laser with a side-length of 50 µm. In this proof of concept, the lasers are multimode with a mode wavelength separation of approximately 1.6 nm, as determined by the waveguide propagation constant......We present a solid state polymer microcavity dye laser, fabricated by thermal nanoimprint lithography (NIL) in a dye-doped thermoplast. The thermoplast poly-methylmethacrylate (PMMA) is used due to its high transparency in the visible range and its robustness to laser radiation. The laser dye...

  20. Group III nitride-arsenide long wavelength lasers grown by elemental source molecular beam epitaxy

    International Nuclear Information System (INIS)

    Coldren, C. W.; Spruytte, S. G.; Harris, J. S.; Larson, M. C.

    2000-01-01

    Elemental source molecular beam epitaxy was used to grow InGaNAs quantum well samples, edge-emitting laser diodes, and vertical-cavity laser diodes on GaAs substrates. The quantum well samples exhibited an as-grown room temperature photoluminescence peak beyond 1310 nm which both increased dramatically in intensity and blueshifted with thermal annealing. Edge emitting laser diodes had threshold current densities as low as 450 and 750 A/cm 2 for single and triple quantum well active regions, respectively, and emitted light at 1220-1250 nm. The vertical cavity laser diodes emitted light at 1200 nm and had threshold current densities of 3 kA/cm 2 and efficiencies of 0.066 W/A. (c) 2000 American Vacuum Society

  1. Hybrid III-V/SOI resonant cavity enhanced photodetector

    DEFF Research Database (Denmark)

    Learkthanakhachon, Supannee; Taghizadeh, Alireza; Park, Gyeong Cheol

    2016-01-01

    A hybrid III–V/SOI resonant-cavity-enhanced photodetector (RCE-PD) structure comprising a high-contrast grating (HCG) reflector, a hybrid grating (HG) reflector, and an air cavity between them, has been proposed and investigated. In the proposed structure, a light absorbing material is integrated...... as part of the HG reflector, enabling a very compact vertical cavity. Numerical investigations show that a quantum efficiency close to 100 % and a detection linewidth of about 1 nm can be achieved, which are desirable for wavelength division multiplexing applications. Based on these results, a hybrid RCE...

  2. Convection in a colloidal suspension in a closed horizontal cell

    International Nuclear Information System (INIS)

    Smorodin, B. L.; Cherepanov, I. N.

    2015-01-01

    The experimentally detected [1] oscillatory regimes of convection in a colloidal suspension of nanoparticles with a large anomalous thermal diffusivity in a closed horizontal cell heated from below have been simulated numerically. The concentration inhomogeneity near the vertical cavity boundaries arising from the interaction of thermal-diffusion separation and convective mixing has been proven to serve as a source of oscillatory regimes (traveling waves). The dependence of the Rayleigh number at the boundary of existence of the traveling-wave regime on the aspect ratio of the closed cavity has been established. The spatial characteristics of the emerging traveling waves have been determined

  3. VCSELs and silicon light sources exploiting SOI grating mirrors

    DEFF Research Database (Denmark)

    Chung, Il-Sug; Mørk, Jesper

    2012-01-01

    In this talk, novel vertical-cavity laser structure consisting of a dielectric Bragg reflector, a III-V active region, and a high-index-contrast grating made in the Si layer of a silicon-on-insulator (SOI) wafer will be presented. In the Si light source version of this laser structure, the SOI...... the Bragg reflector. Numerical simulations show that both the silicon light source and the VCSEL exploiting SOI grating mirrors have superior performances, compared to existing silicon light sources and long wavelength VCSELs. These devices are highly adequate for chip-level optical interconnects as well...

  4. The influence of temperature on the work function of W, LaB 6 and pseudo-alloys

    Science.gov (United States)

    Bulyga, A. V.; Solonovich, V. K.

    1989-12-01

    The experimental temperature dependences α f = d F/d T of the work function F = F( T) for W(111), LaB 6(100) and W-Ni-LaB 6 pseudo-alloy surfaces emitting thermoelectrons are compared with α f predicted by the Hohenberg-Lang-Kohn theory.

  5. Transient heating and entropy generation of a fluid inside a large aspect ratio cavity

    International Nuclear Information System (INIS)

    Cajas, J.C.; Trevino, C.

    2013-01-01

    In this work, the transient heating of a fluid inside a vertical cavity of large aspect ratio (height/length) was studied numerically by the use of the SIMPLE algorithm. The heat sources are two vertical plates localized in the side walls of the cavity near the bottom. Calculations were performed for a fixed value of the Prandtl number, Pr = 7, aspect ratio of 12 and six different Rayleigh numbers between 10 3 and 10 6 . The temperature and entropy production fields, the non-dimensional heat flux on the heated plates (given by the average Nusselt number) have been obtained. From a clear dependence on the Rayleigh number, different mechanisms of symmetry break and heat transfer in the cavity were found, where vortices dynamics play a very important role. A universal behavior of the mean values of the overall reduced entropy production rate was found, valid after a short initial transient. (authors)

  6. Characterization of GaN quantum discs embedded in AlxGa1-xN nanocolumns grown by molecular beam epitaxy

    International Nuclear Information System (INIS)

    Ristic, J.; Calleja, E.; Sanchez-Garcia, M.A.; Ulloa, J.M.; Sanchez-Paramo, J.; Calleja, J.M.; Jahn, U.; Trampert, A.; Ploog, K.H.

    2003-01-01

    GaN quantum discs embedded in AlGaN nanocolumns with outstanding crystal quality and very high luminescence efficiency were grown on Si(111) substrates by plasma-assisted molecular beam epitaxy under highly N-rich conditions. Nanocolumns with diameters in the range of 30-150 nm, with no traces of any extended defects, as confirmed by transmission electron microscopy, were obtained. GaN quantum discs, 2 and 4 nm thick, were grown embedded in AlGaN nanocolumns by switching on and off the Al flux during variable time spans. Strong optical emissions from GaN quantum discs, observed by photoluminescence and cathodoluminescence measurements, reveal quantum confinement effects. While Raman data indicate that the nanocolumns are fully relaxed, the quantum discs appear to be fully strained. These nanostructures have a high potential for application in efficient vertical cavity emitters

  7. Transient heat characteristics of water-saturated porous media with freezing; Toketsu wo tomonau gansui takoshitsu sonai no hiteijo netsu tokusei

    Energy Technology Data Exchange (ETDEWEB)

    Sasaki, A [Akita National College of Technology, Akita (Japan)

    1998-02-25

    Analytical and experimental investigations were performed to examine the transient heat characteristics of water-saturated porous media with freezing. As a physical model, a two-dimensional vertical cavity was considered. One vertical wall was abruptly cooled below the fusion temperature. Other three walls were thermally insulated. Three different sizes of glass, and iron, alumina and copper beads were used as the porous media in this study. The cold energy stored up in the porous media and the average thickness of frozen layer were measured in the experiments. Comparisons of the analytical results with the experimental ones were made, and the effects of Darcy number, Stefan number and modified Prandtl number on the transient heat characteristics were discussed. The dimensionless equations for predicting the averaged frozen layer thickness and the stored cold energy were obtained as a function of various dimensionless parameters. 8 refs., 16 figs., 1 tab.

  8. Tracking an oil slick from multiple natural sources, Coal Oil Point, California

    International Nuclear Information System (INIS)

    Leifer, Ira; Luyendyk, Bruce; Broderick, Kris

    2006-01-01

    Oil slicks on the ocean surface emitted from natural marine hydrocarbon seeps offshore from Coal Oil Point in the Santa Barbara Channel, California were tracked and sampled over a 2-h period. The objectives were to characterize the seep oil and to track its composition over time using a new sampling device, a catamaran drum sampler (CATDRUMS). The sampler was designed and developed at UCSB. Chromatograms showed that oil originating from an informally named, very active seep area, Shane Seep, primarily evolved during the first hour due to mixing with oil originating from a convergence zone slick surrounding Shane Seep. (author)

  9. Tracking an oil slick from multiple natural sources, Coal Oil Point, California

    Energy Technology Data Exchange (ETDEWEB)

    Leifer, Ira [Marine Sciences Institute, University of California, Santa Barbara, CA 93106 (United States); Luyendyk, Bruce [Department of Geological Sciences, University of California, Santa Barbara, CA 93106 (United States); Broderick, Kris [Exxon/Mobil Exploration Company, 13401 N. Freeway, Houston, TX 77060 (United States)

    2006-06-15

    Oil slicks on the ocean surface emitted from natural marine hydrocarbon seeps offshore from Coal Oil Point in the Santa Barbara Channel, California were tracked and sampled over a 2-h period. The objectives were to characterize the seep oil and to track its composition over time using a new sampling device, a catamaran drum sampler (CATDRUMS). The sampler was designed and developed at UCSB. Chromatograms showed that oil originating from an informally named, very active seep area, Shane Seep, primarily evolved during the first hour due to mixing with oil originating from a convergence zone slick surrounding Shane Seep. (author)

  10. Semiconductor quantum-dot lasers and amplifiers

    DEFF Research Database (Denmark)

    Hvam, Jørn Märcher; Borri, Paola; Ledentsov, N. N.

    2002-01-01

    -power surface emitting VCSELs. We investigated the ultrafast dynamics of quantum-dot semiconductor optical amplifiers. The dephasing time at room temperature of the ground-state transition in semiconductor quantum dots is around 250 fs in an unbiased amplifier, decreasing to below 50 fs when the amplifier...... is biased to positive net gain. We have further measured gain recovery times in quantum dot amplifiers that are significantly lower than in bulk and quantum-well semiconductor optical amplifiers. This is promising for future demonstration of quantum dot devices with high modulation bandwidth...

  11. Analysis on characteristic and application of THz frequency comb and THz sub-comb

    International Nuclear Information System (INIS)

    Liu Pengxiang; Xu Degang; Yao Jianquan

    2011-01-01

    In this paper, we proposed a method for THz sub-comb generation based on spectral interference. The result of our calculation indicated that the THz pulse train, generated by surface-emitted optical rectification of femtosecond (fs) laser pulse in periodically poled lithium niobate (PPLN), has a comb-like spectrum. The characteristic of this THz sub-comb was analyzed both in frequency and time domain. Compared with the THz frequency comb emitted by a photoconductive antenna (PCA), THz sub-comb has a lower spectral resolution and wider free spectral range. Thus it could be an ideal source for wavelength division multiplexing (WDM) in THz wireless communication system.

  12. InP-based three-dimensional photonic integrated circuits

    Science.gov (United States)

    Tsou, Diana; Zaytsev, Sergey; Pauchard, Alexandre; Hummel, Steve; Lo, Yu-Hwa

    2001-10-01

    Fast-growing internet traffic volumes require high data communication bandwidth over longer distances than short wavelength (850 nm) multi-mode fiber systems can provide. Access network bottlenecks put pressure on short-range (SR) telecommunication systems. To effectively address these datacom and telecom market needs, low cost, high-speed laser modules at 1310 and 1550 nm wavelengths are required. The great success of GaAs 850 nm VCSELs for Gb/s Ethernet has motivated efforts to extend VCSEL technology to longer wavelengths in the 1310 and 1550 nm regimes. However, the technological challenges associated with available intrinsic materials for long wavelength VCSELs are tremendous. Even with recent advances in this area, it is believed that significant additional development is necessary before long wavelength VCSELs that meet commercial specifications will be widely available. In addition, the more stringent OC192 and OC768 specifications for single-mode fiber (SMF) datacom may require more than just a long wavelength laser diode, VCSEL or not, to address numerous cost and performance issues. We believe that photonic integrated circuits, which compactly integrate surface-emitting lasers with additional active and passive optical components with extended functionality, will provide the best solutions to today's problems. Photonic integrated circuits (PICs) have been investigated for more than a decade. However, they have produced limited commercial impact to date primarily because the highly complicated fabrication processes produce significant yield and device performance issues. In this presentation, we will discuss a new technology platform for fabricating InP-based photonic integrated circuits compatible with surface-emitting laser technology. Employing InP transparency at 1310 and 1550 nm wavelengths, we have created 3-D photonic integrated circuits (PICs) by utilizing light beams in both surface normal and in-plane directions within the InP-based structure

  13. Terahertz wave parametric oscillations at polariton resonance using a MgO:LiNbO3 crystal.

    Science.gov (United States)

    Li, Zhongyang; Bing, Pibin; Yuan, Sheng; Xu, Degang; Yao, Jianquan

    2015-06-20

    Terahertz wave (THz-wave) parametric oscillations with a noncollinear phase-matching scheme at polariton resonance using a MgO:LiNbO3 crystal with a surface-emitted configuration are investigated. We investigate frequency tuning characteristics of a THz-wave via varying the wavelength of the pump wave and phase-matching angle. The effective parametric gain length under the noncollinear phase-matching condition is calculated. Parametric gain and absorption characteristics of a THz-wave in the vicinity of polariton resonances are analyzed.

  14. A tunable lighting system integrated by inorganic and transparent organic light-emitting diodes

    Science.gov (United States)

    Zhang, Jing-jing; Zhang, Tao; Jin, Ya-fang; Liu, Shi-shen; Yuan, Shi-dong; Cui, Zhao; Zhang, Li; Wang, Wei-hui

    2014-05-01

    A tunable surface-emitting integrated lighting system is constructed using a combination of inorganic light-emitting diodes (LEDs) and transparent organic LEDs (OLEDs). An RB two-color LED is used to supply red and blue light emission, and a green organic LED is used to supply green light emission. Currents of the LED and OLED are tuned to produce a white color, showing different Commission Internationale d'Eclairage (CIE) chromaticity coordinates and correlated color temperatures with a wide adjustable range. Such an integration can compensate for the lack of the LED's luminance uniformity and the transparent OLED's luminance intensity.

  15. PbSe Quantum Well VECSEL on Si

    Science.gov (United States)

    Fill, M.; Khiar, A.; Rahim, M.; Felder, F.; Zogg, H.

    2011-12-01

    Vertical external cavity surface emitting lasers in the wavelength region from 3-5 μm are presented. They are based on PbSe quantum wells grown on Si substrates. As host material Pb1-xEuxSe and Pb1-xSrxSe are used. With Pb1-xSrxSe as host material maximum operation temperatures of 325 K are achieved, while with Pb1-xEuxSe an operation temperature of 245 K could not be overcome. This may be explained by a band alignment transition from type I to type II with increasing temperature.

  16. Mid-Infrared Continuously Tunable Single Mode VECSEL

    Science.gov (United States)

    Khiar, A.; Rahim, M.; Felder, F.; Fill, M.; Zogg, H.

    2011-12-01

    Tunable mid-infrared vertical external cavity surface emitting lasers were developed for the wavelength range around 3.8-3.9 μm and 3.2-3.3 μm, respectively. The devices are based on lead salt materials epitaxially grown by MBE on a Si substrate. The active part consists of PbSe QW in a PbSrSe host layer. Both devices are operated around -20 °C and have output power of several 10 mW. By changing the cavity length, a single mode hop free tuning range up to 80 cm-1 is achieved.

  17. 2D modelling of a UF6 container in a fire

    International Nuclear Information System (INIS)

    Duret, B.; Seiler, J.M.

    1993-01-01

    We present some results on 2D thermal modelisation of the behaviour of UF6 in a fire. A cylindrical container is engulfed by a high temperature space where the heat transfer is expected to occur by radiation only. During the first minutes, we assume that the thermal resistance is between the external wall and the UF6 solid, the heat transfer can be split up into three kinds: 1) conduction to solid UF6 through a contact surface. 2) radiative transfer. 3) gas layer with a small heat conductance. This thermal resistance is initially determined by the UF6 filling type, shape and also is time dependant by thermal dilatation effects. On the onset of liquifying the heat transfer increases because of the larger liquid exchange. The liquid and boiling heat flow is then calculated by a model on the basis of classical correlations in vertical cavities. Numerical evaluations have been performed with a finite element model using: ANSYS. With a realistic hypothesis, the effect of the following parameters is estimated: thermal conductivity of UF6 solid, contact surface fraction, UF6 emissivity, gas gap thickness, liquid UF6 wall exchange, solid liquid transition criteria, non condensation factor k. (J.P.N.)

  18. Experimental investigation of the charge/discharge process for an organic PCM macroencapsulated in an aluminium rectangular cavity

    Science.gov (United States)

    Bejan, Andrei-Stelian; Labihi, Abdelouhab; Croitoru, Cristiana Verona; Catalina, Tiberiu; Chehouani, Hassan; Benhamou, Brahim

    2018-02-01

    Buildings sector has one of the highest potential regarding the reduction of greenhouse gases emissions, as being responsible for more than 40% of energy consumption worldwide. This is why, in order to achieve indoor thermal comfort, it is mandatory to use energy-efficient systems. Materials acting as thermal energy storage (TES) represents one of the most effective strategy that can be implemented and nowadays, many studies are focusing their attention on latent heat storage, respectively on phase changing materials (PCM) which can embed a large embed a high quantity of energy, unlike classic materials acting as thermal mass. This purpose of this paper is to experimentally investigate the charge and discharge processes for an organic PCM (RT35 paraffin) macroencapsulated in an aluminium rectangular cavity which was placed first in a horizontal position and after in a vertical position. After several experimental campaigns conducted we determined that the vertical position enhance the heat transfer because of the natural convection which occurs inside the cavity. Therefore, the charging time is lower in case of the vertical cavity and the temperature measured inside and on the surface is higher.

  19. Cost-effective parallel optical interconnection module based on fully passive-alignment process

    Science.gov (United States)

    Son, Dong Hoon; Heo, Young Soon; Park, Hyoung-Jun; Kang, Hyun Seo; Kim, Sung Chang

    2017-11-01

    In optical interconnection technology, high-speed and large data transitions with low error rate and cost reduction are key issues for the upcoming 8K media era. The researchers present notable types of optical manufacturing structures of a four-channel parallel optical module by fully passive alignment, which are able to reduce manufacturing time and cost. Each of the components, such as vertical-cavity surface laser/positive-intrinsic negative-photodiode array, microlens array, fiber array, and receiver (RX)/transmitter (TX) integrated circuit, is integrated successfully using flip-chip bonding, die bonding, and passive alignment with a microscope. Clear eye diagrams are obtained by 25.78-Gb/s (for TX) and 25.7-Gb/s (for RX) nonreturn-to-zero signals of pseudorandom binary sequence with a pattern length of 231 to 1. The measured responsivity and minimum sensitivity of the RX are about 0.5 A/W and ≤-6.5 dBm at a bit error rate (BER) of 10-12, respectively. The optical power margin at a BER of 10-12 is 7.5 dB, and cross talk by the adjacent channel is ≤1 dB.

  20. Quasi-periodicity and chaos in a differentially heated cavity

    Energy Technology Data Exchange (ETDEWEB)

    Mercader, Isabel; Batiste, Oriol [Universitat Politecnica de Catalunya, Dep. Fisica Aplicada, Barcelona (Spain); Ruiz, Xavier [Univesitat Rovira i Virgili, Lab. Fisica Aplicada, Facultat de Ciencies Quimiques, Tarragona (Spain)

    2004-11-01

    Convective flows of a small Prandtl number fluid contained in a two-dimensional vertical cavity subject to a lateral thermal gradient are studied numerically. The chosen geometry and the values of the material parameters are relevant to semiconductor crystal growth experiments in the horizontal configuration of the Bridgman method. For increasing Rayleigh numbers we find a transition from a steady flow to periodic solutions through a supercritical Hopf bifurcation that maintains the centro-symmetry of the basic circulation. For a Rayleigh number of about ten times that of the Hopf bifurcation, the periodic solution loses stability in a subcritical Neimark-Sacker bifurcation, which gives rise to a branch of quasiperiodic states. In this branch, several intervals of frequency locking have been identified. Inside the resonance horns the stable limit cycles lose and gain stability via some typical scenarios in the bifurcation of periodic solutions. After a complicated bifurcation diagram of the stable limit cycle of the 1:10 resonance horn, a soft transition to chaos is obtained. (orig.)

  1. Volumetric cutaneous microangiography of human skin in vivo by VCSEL swept-source optical coherence tomography

    Energy Technology Data Exchange (ETDEWEB)

    Woo June Choi; Wang, R K [University of Washington, Department of Bioengineering, Seattle, Washington 98195 (United States)

    2014-08-31

    We demonstrate volumetric cutaneous microangiography of the human skin in vivo that utilises 1.3-μm high-speed sweptsource optical coherence tomography (SS-OCT). The swept source is based on a micro-electro-mechanical (MEMS)-tunable vertical cavity surface emission laser (VCSEL) that is advantageous in terms of long coherence length over 50 mm and 100 nm spectral bandwidth, which enables the visualisation of microstructures within a few mm from the skin surface. We show that the skin microvasculature can be delineated in 3D SS-OCT images using ultrahigh-sensitive optical microangiography (UHS-OMAG) with a correlation mapping mask, providing a contrast enhanced blood perfusion map with capillary flow sensitivity. 3D microangiograms of a healthy human finger are shown with distinct cutaneous vessel architectures from different dermal layers and even within hypodermis. These findings suggest that the OCT microangiography could be a beneficial biomedical assay to assess cutaneous vascular functions in clinic. (laser biophotonics)

  2. Volumetric cutaneous microangiography of human skin in vivo by VCSEL swept-source optical coherence tomography

    International Nuclear Information System (INIS)

    Woo June Choi; Wang, R K

    2014-01-01

    We demonstrate volumetric cutaneous microangiography of the human skin in vivo that utilises 1.3-μm high-speed sweptsource optical coherence tomography (SS-OCT). The swept source is based on a micro-electro-mechanical (MEMS)-tunable vertical cavity surface emission laser (VCSEL) that is advantageous in terms of long coherence length over 50 mm and 100 nm spectral bandwidth, which enables the visualisation of microstructures within a few mm from the skin surface. We show that the skin microvasculature can be delineated in 3D SS-OCT images using ultrahigh-sensitive optical microangiography (UHS-OMAG) with a correlation mapping mask, providing a contrast enhanced blood perfusion map with capillary flow sensitivity. 3D microangiograms of a healthy human finger are shown with distinct cutaneous vessel architectures from different dermal layers and even within hypodermis. These findings suggest that the OCT microangiography could be a beneficial biomedical assay to assess cutaneous vascular functions in clinic. (laser biophotonics)

  3. Simplified analytical model for thermal transfer in vertical hollow brick

    Energy Technology Data Exchange (ETDEWEB)

    Lorente, S [Lab. d` Etudes Thermiques et Mecaniques, INSA, UPS, Toulouse (France); Petit, M [Lab. d` Etudes Thermiques et Mecaniques, INSA, UPS, Toulouse (France); Javelas, R [Lab. d` Etudes Thermiques et Mecaniques, INSA, UPS, Toulouse (France)

    1996-12-01

    A modern building envelope has a lot of little cavities. Most of them are vertical with a high height to thickness ratio. We present here the conception of a software to determine heat transfer through terra-cotta bricks full of large vertical cavities. After a bibliographic study on convective heat transfer in such cavities, we made an analytical model based on Karman-Polhausen`s method for convection and on the radiosity method for radiative heat transfer. We used a test apparatus of a single cavity to determine the temperature field inside the cavity. Using these experimental results, we showed that the exchange was two-dimensional. We also realised heat flux measurements. Then we expose our theoretical study: We propose relations between central core temperatures and active face temperatures, then between outside and inside active face temperatures. We calculate convective superficial heat transfer because we noticed we have boundary layers along the active faces. We realise a heat flux balance between convective plus radiative heat transfer and conductive heat transfer, so we propose an algorithm to calculate global heat transfer through a single cavity. Finally, we extend our model to a whole hollow brick with lined-up cavities and propose an algorithm to calculate heat flux and thermal resistance with a good accuracy ({approx}7.5%) compared to previous experimental results. (orig.)

  4. A Novel Manufacturing Process for Compact, Low-Weight and Flexible Ultra-Wideband Cavity Backed Textile Antennas

    Directory of Open Access Journals (Sweden)

    Dries Van Baelen

    2018-01-01

    Full Text Available A novel manufacturing procedure for the fabrication of ultra-wideband cavity-backed substrate integrated waveguide antennas on textile substrates is proposed. The antenna cavity is constructed using a single laser-cut electrotextile patch, which is folded around the substrate. Electrotextile slabs protruding from the laser-cut patch are then vertically folded and glued to form the antenna cavity instead of rigid metal tubelets to implement the vertical cavity walls. This approach drastically improves mechanical flexibility, decreases the antenna weight to slightly more than 1 g and significantly reduces alignment errors. As a proof of concept, a cavity-backed substrate integrated waveguide antenna is designed and realized for ultra-wideband operation in the [5.15–5.85] GHz band. Antenna performance is validated in free space as well as in two on body measurement scenarios. Furthermore, the antenna’s figures of merit are characterized when the prototype is bent at different curvature radii, as commonly encountered during deployment on the human body. Also the effect of humidity content on antenna performance is studied. In all scenarios, the realized antenna covers the entire operating frequency band, meanwhile retaining a stable radiation pattern with a broadside gain above 5 dBi, and a radiation efficiency of at least 70%.

  5. Industrialization of the nitrogen-doping preparation for SRF cavities for LCLS-II

    Science.gov (United States)

    Gonnella, D.; Aderhold, S.; Burrill, A.; Daly, E.; Davis, K.; Grassellino, A.; Grimm, C.; Khabiboulline, T.; Marhauser, F.; Melnychuk, O.; Palczewski, A.; Posen, S.; Ross, M.; Sergatskov, D.; Sukhanov, A.; Trenikhina, Y.; Wilson, K. M.

    2018-03-01

    The Linac Coherent Light Source II (LCLS-II) is a new state-of-the-art coherent X-ray source being constructed at SLAC National Accelerator Laboratory. It employs 280 superconducting radio frequency (SRF) cavities in order operate in continuous wave (CW) mode. To reduce the overall cryogenic cost of such a large accelerator, nitrogen-doping of the SRF cavities is being used. Nitrogen-doping has consistently been shown to increase the efficiency of SRF cavities operating in the 2.0 K regime and at medium fields (15-20 MV/m) in vertical cavity tests and horizontal cryomodule tests. While nitrogen-doping's efficacy for improvement of cavity performance was demonstrated at three independent labs, Fermilab, Jefferson Lab, and Cornell University, transfer of the technology to industry for LCLS-II production was not without challenges. Here we present results from the beginning of LCLS-II cavity production. We discuss qualification of the cavity vendors and the first cavities from each vendor. Finally, we demonstrate that nitrogen-doping has been successfully transferred to SRF cavity vendors, resulting in consistent production of cavities with better cryogenic efficiency than has ever been achieved for a large-scale accelerator.

  6. Quantum dot spin-V(E)CSELs: polarization switching and periodic oscillations

    Science.gov (United States)

    Li, Nianqiang; Alexandropoulos, Dimitris; Susanto, Hadi; Henning, Ian; Adams, Michael

    2017-09-01

    Spin-polarized vertical (external) cavity surface-emitting lasers [Spin-V(E)CSELs] using quantum dot (QD) material for the active region, can display polarization switching between the right- and left-circularly polarized fields via control of the pump polarization. In particular, our previous experimental results have shown that the output polarization ellipticity of the spin-V(E)CSEL emission can exhibit either the same handedness as that of the pump polarization or the opposite, depending on the experimental operating conditions. In this contribution, we use a modified version of the spin-flip model in conjunction with combined time-independent stability analysis and direct time integration. With two representative sets of parameters our simulation results show good agreement with experimental observations. In addition periodic oscillations provide further insight into the dynamic properties of spin-V(E)CSELs.

  7. Planar integrated metasurfaces for highly-collimated terahertz quantum cascade lasers

    Science.gov (United States)

    Liang, Guozhen; Dupont, Emmanuel; Fathololoumi, Saeed; Wasilewski, Zbigniew R.; Ban, Dayan; Liang, Hou Kun; Zhang, Ying; Yu, Siu Fung; Li, Lianhe H.; Davies, Alexander Giles; Linfield, Edmund H.; Liu, Hui Chun; Wang, Qi Jie

    2014-01-01

    We report planar integration of tapered terahertz (THz) frequency quantum cascade lasers (QCLs) with metasurface waveguides that are designed to be spoof surface plasmon (SSP) out-couplers by introducing periodically arranged SSP scatterers. The resulting surface-emitting THz beam profile is highly collimated with a divergence as narrow as ~4° × 10°, which indicates a good waveguiding property of the metasurface waveguide. In addition, the low background THz power implies a high coupling efficiency for the THz radiation from the laser cavity to the metasurface structure. Furthermore, since all the structures are in-plane, this scheme provides a promising platform where well-established surface plasmon/metasurface techniques can be employed to engineer the emitted beam of THz QCLs controllably and flexibly. More importantly, an integrated active THz photonic circuit for sensing and communication applications could be constructed by incorporating other optoelectronic devices such as Schottky diode THz mixers, and graphene modulators and photodetectors. PMID:25403796

  8. Direct transparent electrode patterning on layered GaN substrate by screen printing of indium tin oxide nanoparticle ink for Eu-doped GaN red light-emitting diode

    International Nuclear Information System (INIS)

    Kashiwagi, Y.; Yamamoto, M.; Saitoh, M.; Takahashi, M.; Ohno, T.; Nakamoto, M.; Koizumi, A.; Fujiwara, Y.; Takemura, Y.; Murahashi, K.; Ohtsuka, K.; Furuta, S.

    2014-01-01

    Transparent electrodes were formed on Eu-doped GaN-based red-light-emitting diode (GaN:Eu LED) substrates by the screen printing of indium tin oxide nanoparticle (ITO np) inks as a wet process. The ITO nps with a mean diameter of 25 nm were synthesized by the controlled thermolysis of a mixture of indium complexes and tin complexes. After the direct screen printing of ITO np inks on GaN:Eu LED substrates and sintering at 850 °C for 10 min under atmospheric conditions, the resistivity of the ITO film was 5.2 mΩ cm. The fabricated LED up to 3 mm square surface emitted red light when the on-voltage was exceeded

  9. Direct transparent electrode patterning on layered GaN substrate by screen printing of indium tin oxide nanoparticle ink for Eu-doped GaN red light-emitting diode

    Science.gov (United States)

    Kashiwagi, Y.; Koizumi, A.; Takemura, Y.; Furuta, S.; Yamamoto, M.; Saitoh, M.; Takahashi, M.; Ohno, T.; Fujiwara, Y.; Murahashi, K.; Ohtsuka, K.; Nakamoto, M.

    2014-12-01

    Transparent electrodes were formed on Eu-doped GaN-based red-light-emitting diode (GaN:Eu LED) substrates by the screen printing of indium tin oxide nanoparticle (ITO np) inks as a wet process. The ITO nps with a mean diameter of 25 nm were synthesized by the controlled thermolysis of a mixture of indium complexes and tin complexes. After the direct screen printing of ITO np inks on GaN:Eu LED substrates and sintering at 850 °C for 10 min under atmospheric conditions, the resistivity of the ITO film was 5.2 mΩ cm. The fabricated LED up to 3 mm square surface emitted red light when the on-voltage was exceeded.

  10. Direct transparent electrode patterning on layered GaN substrate by screen printing of indium tin oxide nanoparticle ink for Eu-doped GaN red light-emitting diode

    Energy Technology Data Exchange (ETDEWEB)

    Kashiwagi, Y., E-mail: kasiwagi@omtri.or.jp; Yamamoto, M.; Saitoh, M.; Takahashi, M.; Ohno, T.; Nakamoto, M. [Osaka Municipal Technical Research Institute, 1-6-50 Morinomiya, Joto-ku, Osaka 536-8553 (Japan); Koizumi, A.; Fujiwara, Y. [Division of Materials and Manufacturing Science, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871 (Japan); Takemura, Y.; Murahashi, K.; Ohtsuka, K. [Okuno Chemical Industries Co., Ltd., 2-1-25 Hanaten-nishi, Joto-ku, Osaka 536-0011 (Japan); Furuta, S. [Tomoe Works Co., Ltd., 7-13 Tsurumachi, Amagasaki 660-0092 (Japan)

    2014-12-01

    Transparent electrodes were formed on Eu-doped GaN-based red-light-emitting diode (GaN:Eu LED) substrates by the screen printing of indium tin oxide nanoparticle (ITO np) inks as a wet process. The ITO nps with a mean diameter of 25 nm were synthesized by the controlled thermolysis of a mixture of indium complexes and tin complexes. After the direct screen printing of ITO np inks on GaN:Eu LED substrates and sintering at 850 °C for 10 min under atmospheric conditions, the resistivity of the ITO film was 5.2 mΩ cm. The fabricated LED up to 3 mm square surface emitted red light when the on-voltage was exceeded.

  11. Multi-angle VECSEL cavities for dispersion control and multi-color operation

    Science.gov (United States)

    Baker, Caleb; Scheller, Maik; Laurain, Alexandre; Yang, Hwang-Jye; Ruiz Perez, Antje; Stolz, Wolfgang; Addamane, Sadhvikas J.; Balakrishnan, Ganesh; Jones, R. Jason; Moloney, Jerome V.

    2017-02-01

    We present a novel Vertical External Cavity Surface Emitting Laser (VECSEL) cavity design which makes use of multiple interactions with the gain region under different angles of incidence in a single round trip. This design allows for optimization of the net, round-trip Group Delay Dispersion (GDD) by shifting the GDD of the gain via cavity fold angle while still maintaining the high gain of resonant structures. The effectiveness of this scheme is demonstrated with femtosecond-regime pulses from a resonant structure and record pulse energies for the VECSEL gain medium. In addition, we show that the interference pattern of the intracavity mode within the active region, resulting from the double-angle multifold, is advantageous for operating the laser in CW on multiple wavelengths simultaneously. Power, noise, and mode competition characterization is presented.

  12. High brightness diode-pumped organic solid-state laser

    Energy Technology Data Exchange (ETDEWEB)

    Zhao, Zhuang; Mhibik, Oussama; Nafa, Malik; Chénais, Sébastien; Forget, Sébastien, E-mail: sebastien.forget@univ-paris13.fr [Université Paris 13, Sorbonne Paris Cité, Laboratoire de Physique des Lasers, F-93430, Villetaneuse (France); CNRS, UMR 7538, LPL, F-93430, Villetaneuse (France)

    2015-02-02

    High-power, diffraction-limited organic solid-state laser operation has been achieved in a vertical external cavity surface-emitting organic laser (VECSOL), pumped by a low-cost compact blue laser diode. The diode-pumped VECSOLs were demonstrated with various dyes in a polymer matrix, leading to laser emissions from 540 nm to 660 nm. Optimization of both the pump pulse duration and output coupling leads to a pump slope efficiency of 11% for a DCM based VECSOLs. We report output pulse energy up to 280 nJ with 100 ns long pump pulses, leading to a peak power of 3.5 W in a circularly symmetric, diffraction-limited beam.

  13. Visible Quantum Nanophotonics.

    Energy Technology Data Exchange (ETDEWEB)

    Subramania, Ganapathi Subramanian [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Wang, George T. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Fischer, Arthur J. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Wierer, Jonathan J. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Tsao, Jeffrey Y. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Koleske, Daniel [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Coltrin, Michael E. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Agarwal, Sapan [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Anderson, P. Duke [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Leung, Ben [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

    2017-09-01

    The goal of this LDRD is to develop a quantum nanophotonics capability that will allow practical control over electron (hole) and photon confinement in more than one dimension. We plan to use quantum dots (QDs) to control electrons, and photonic crystals to control photons. InGaN QDs will be fabricated using quantum size control processes, and methods will be developed to add epitaxial layers for hole injection and surface passivation. We will also explore photonic crystal nanofabrication techniques using both additive and subtractive fabrication processes, which can tailor photonic crystal properties. These two efforts will be combined by incorporating the QDs into photonic crystal surface emitting lasers (PCSELs). Modeling will be performed using finite-different time-domain and gain analysis to optimize QD-PCSEL designs that balance laser performance with the ability to nano-fabricate structures. Finally, we will develop design rules for QD-PCSEL architectures, to understand their performance possibilities and limits.

  14. Physically transient photonics: random versus distributed feedback lasing based on nanoimprinted DNA.

    Science.gov (United States)

    Camposeo, Andrea; Del Carro, Pompilio; Persano, Luana; Cyprych, Konrad; Szukalski, Adam; Sznitko, Lech; Mysliwiec, Jaroslaw; Pisignano, Dario

    2014-10-28

    Room-temperature nanoimprinted, DNA-based distributed feedback (DFB) laser operation at 605 nm is reported. The laser is made of a pure DNA host matrix doped with gain dyes. At high excitation densities, the emission of the untextured dye-doped DNA films is characterized by a broad emission peak with an overall line width of 12 nm and superimposed narrow peaks, characteristic of random lasing. Moreover, direct patterning of the DNA films is demonstrated with a resolution down to 100 nm, enabling the realization of both surface-emitting and edge-emitting DFB lasers with a typical line width of <0.3 nm. The resulting emission is polarized, with a ratio between the TE- and TM-polarized intensities exceeding 30. In addition, the nanopatterned devices dissolve in water within less than 2 min. These results demonstrate the possibility of realizing various physically transient nanophotonics and laser architectures, including random lasing and nanoimprinted devices, based on natural biopolymers.

  15. Vortex Laser based on III-V semiconductor metasurface: direct generation of coherent Laguerre-Gauss modes carrying controlled orbital angular momentum.

    Science.gov (United States)

    Seghilani, Mohamed S; Myara, Mikhael; Sellahi, Mohamed; Legratiet, Luc; Sagnes, Isabelle; Beaudoin, Grégoire; Lalanne, Philippe; Garnache, Arnaud

    2016-12-05

    The generation of a coherent state, supporting a large photon number, with controlled orbital-angular-momentum L = ħl (of charge l per photon) presents both fundamental and technological challenges: we demonstrate a surface-emitting laser, based on III-V semiconductor technology with an integrated metasurface, generating vortex-like coherent state in the Laguerre-Gauss basis. We use a first order phase perturbation to lift orbital degeneracy of wavefunctions, by introducing a weak anisotropy called here "orbital birefringence", based on a dielectric metasurface. The azimuthal symmetry breakdown and non-linear laser dynamics create "orbital gain dichroism" allowing selecting vortex handedness. This coherent photonic device was characterized and studied, experimentally and theoretically. It exhibits a low divergence (50 dB vortex purity), and single frequency operation in a stable low noise regime (0.1% rms). Such high performance laser opens the path to widespread new photonic applications.

  16. Fundamentals of metasurface lasers based on resonant dark states

    International Nuclear Information System (INIS)

    Droulias, Sotiris; Technology - Hellas; Jain, Aditya; Koschny, Thomas; Soukoulis, Costas M.; Technology - Hellas; Ames Laboratory and Iowa State University, Ames, IA

    2017-01-01

    Recently, our group proposed a metamaterial laser design based on explicitly coupled dark resonant states in low-loss dielectrics, which conceptually separates the gain-coupled resonant photonic state responsible for macroscopic stimulated emission from the coupling to specific free-space propagating modes, allowing independent adjustment of the lasing state and its coherent radiation output. Due to this functionality, it is now possible to make lasers that can overcome the trade-off between system dimensions and Q factor, especially for surface emitting lasers with deeply subwavelength thickness. In this paper, we give a detailed discussion of the key functionality and benefits of this design, such as radiation damping tunability, directionality, subwavelength integration, and simple layer-by-layer fabrication. Finally, we examine in detail the fundamental design tradeoffs that establish the principle of operation and must be taken into account and give guidance for realistic implementations.

  17. Frequency-agile THz-wave generation and detection system using nonlinear frequency conversion at room temperature.

    Science.gov (United States)

    Guo, Ruixiang; Ikar'i, Tomofumi; Zhang, Jun; Minamide, Hiroaki; Ito, Hiromasa

    2010-08-02

    A surface-emitting THz parametric oscillator is set up to generate a narrow-linewidth, nanosecond pulsed THz-wave radiation. The THz-wave radiation is coherently detected using the frequency up-conversion in MgO: LiNbO(3) crystal. Fast frequency tuning and automatic achromatic THz-wave detection are achieved through a special optical design, including a variable-angle mirror and 1:1 telescope devices in the pump and THz-wave beams. We demonstrate a frequency-agile THz-wave parametric generation and THz-wave coherent detection system. This system can be used as a frequency-domain THz-wave spectrometer operated at room-temperature, and there are a high possible to develop into a real-time two-dimensional THz spectral imaging system.

  18. Influence of Coulomb screening on lateral lasing in VECSELs.

    Science.gov (United States)

    Wang, Chengao; Malloy, Kevin; Sheik-Bahae, Mansoor

    2015-12-14

    Parasitic lateral lasing in certain optically pumped semiconductor disc lasers drains the gain of the vertical mode and thus causes power scaling degradation and premature rollover in surface emitting operation. We have observed this effect in both multiple quantum wells (MQW) (GaInAs/GaAs) and double heterostructures (DHS) (GaInP/GaAs/GaInP) under pulsed excitation even when the gain chip lateral dimensions are much larger than the diameter of the pump laser. Lateral lasing occurs persistently between cleaved facets at a band-tail wavelength much longer than the peak of the gain. We show that the effect of bandgap renormalization due to Coulomb screening explains this phenomena. Exploiting the simple analytical plasma theory of bulk semiconductors (Banyai & Koch, 1986), we can account for such an effect in double heterostructures.

  19. New developments in THz-time domain spectroscopy involving ML-VECSELs

    Science.gov (United States)

    Apostolopoulos, Vasilis; Tropper, Anne C.; Keenlyside, Benjamin; Chen-Sverre, Theo; Woods, Jonathan R. C.

    2018-02-01

    The THz time domain spectrometer (THz-TDS) has revolutionized the adoption of THz science in fields such as medicine, material characterization, pharmaceutical research and biology among others. Traditionally a THz-TDS was based on a titanium sapphire laser, while most of the commercially sold spectrometers today adopt fiber lasers. Vertical External Cavity Surface emitting lasers or VECSELs have potential to be the future laser of choice for the implementation of THz spectrometers, as they are small, low-cost, low noise and high repetition rate. Here I will outline the progress in our laboratory and the general community concerning VECSEL-THz technology and I will account the problems that have to be solved for the VECSEL-THz technology to succeed.

  20. CRDS with a VECSEL for broad-band high sensitivity spectroscopy in the 2.3 μm window

    Energy Technology Data Exchange (ETDEWEB)

    Čermák, P., E-mail: cermak@fmph.uniba.sk [University Grenoble Alpes, LIPhy, F-38000 Grenoble (France); CNRS, LIPhy, UMR 5588, F-38000 Grenoble (France); Department of Experimental Physics, Faculty of Mathematics, Physics and Informatics, Comenius University, Mlynská Dolina, 842 48 Bratislava (Slovakia); Chomet, B. [IES, CNRS, UMR5214, University Montpellier, F-34000 Montpellier (France); Innoptics, Institut d’Optique d’Aquitaine Rue François Mitterrand, 33400 Talence (France); Ferrieres, L.; Denet, S.; Lecocq, V. [Innoptics, Institut d’Optique d’Aquitaine Rue François Mitterrand, 33400 Talence (France); Vasilchenko, S. [University Grenoble Alpes, LIPhy, F-38000 Grenoble (France); CNRS, LIPhy, UMR 5588, F-38000 Grenoble (France); Laboratory of Molecular Spectroscopy, V.E. Zuev Institute of Atmospheric Optics, SB Russian Academy of Science, 1 Academician Zuev Square, 634021 Tomsk (Russian Federation); Mondelain, D.; Kassi, S.; Campargue, A. [University Grenoble Alpes, LIPhy, F-38000 Grenoble (France); CNRS, LIPhy, UMR 5588, F-38000 Grenoble (France); Myara, M.; Cerutti, L.; Garnache, A. [IES, CNRS, UMR5214, University Montpellier, F-34000 Montpellier (France)

    2016-08-15

    The integration of an industry ready packaged Sb-based Vertical-External-Cavity Surface-Emitting-Laser (VECSEL) into a Cavity Ring Down Spectrometer (CRDS) is presented. The instrument operates in the important 2.3 μm atmospheric transparency window and provides a high sensitivity (minimum detectable absorption of 9 × 10{sup −11} cm{sup −1}) over a wide spectra range. The VECSEL performances combine a large continuous tunability over 120 cm{sup −1} around 4300 cm{sup −1} together with a powerful (∼5 mW) TEM{sub 00} diffraction limited beam and linewidth at MHz level (for 1 ms of integration time). The achieved performances are illustrated by high sensitivity recordings of the very weak absorption spectrum of water vapor in the region. The developed method gives potential access to the 2-2.7 μm range for CRDS.

  1. CRDS with a VECSEL for broad-band high sensitivity spectroscopy in the 2.3 μm window.

    Science.gov (United States)

    Čermák, P; Chomet, B; Ferrieres, L; Vasilchenko, S; Mondelain, D; Kassi, S; Campargue, A; Denet, S; Lecocq, V; Myara, M; Cerutti, L; Garnache, A

    2016-08-01

    The integration of an industry ready packaged Sb-based Vertical-External-Cavity Surface-Emitting-Laser (VECSEL) into a Cavity Ring Down Spectrometer (CRDS) is presented. The instrument operates in the important 2.3 μm atmospheric transparency window and provides a high sensitivity (minimum detectable absorption of 9 × 10(-11) cm(-1)) over a wide spectra range. The VECSEL performances combine a large continuous tunability over 120 cm(-1) around 4300 cm(-1) together with a powerful (∼5 mW) TEM00 diffraction limited beam and linewidth at MHz level (for 1 ms of integration time). The achieved performances are illustrated by high sensitivity recordings of the very weak absorption spectrum of water vapor in the region. The developed method gives potential access to the 2-2.7 μm range for CRDS.

  2. IV-VI mid-infrared VECSEL on Si-substrate

    Science.gov (United States)

    Fill, M.; Felder, F.; Rahim, M.; Khiar, A.; Rodriguez, R.; Zogg, H.; Ishida, A.

    2012-03-01

    Optically pumped VECSEL (vertical external cavity surface emitting lasers) based on IV-VI semiconductors grown on Si cover the entire wavelength range between 3.0 and 10 μm. Thanks to their simple structure and large wavelength coverage they are an interesting alternative laser technology to access the mid-infrared wavelength region. The active layers consist either of homogeneous "bulk" layers, double heterostructures or quantum well structures of the PbSe, PbTe or PbS material system. Maximum operation temperatures of 325 K are achieved with output powers above 200 mWp. Further, continuously tunable VECSEL are presented, emitting between 3.2 and 5.4 μm. The single emission mode is continuously tunable over 50-100 nm around the center wavelength, yielding an output power > 10 mWp. The axial symmetric emission beam has a half divergence angle of < 3.3°.

  3. Broadly tunable mid-infrared VECSEL for multiple components hydrocarbon gas sensing

    Science.gov (United States)

    Rey, J. M.; Fill, M.; Felder, F.; Sigrist, M. W.

    2014-12-01

    A new sensing platform to simultaneously identify and quantify volatile C1 to C4 alkanes in multi-component gas mixtures is presented. This setup is based on an optically pumped, broadly tunable mid-infrared vertical-external-cavity surface-emitting laser (VECSEL) developed for gas detection. The lead-chalcogenide VECSEL is the key component of the presented optical sensor. The potential of the proposed sensing setup is illustrated by experimental absorption spectra obtained from various mixtures of volatile hydrocarbons and water vapor. The sensor has a sub-ppm limit of detection for each targeted alkane in a hydrocarbon gas mixture even in the presence of a high water vapor content.

  4. Above Room Temperature Lead Salt VECSELs

    Science.gov (United States)

    Rahim, M.; Khiar, A.; Felder, F.; Fill, M.; Chappuis, D.; Zogg, H.

    2010-01-01

    Mid-infrared vertical external cavity surface emitting lasers (VECSEL) were developed for the wavelength range 4 to 5 μm. The devices are based on lead salt materials grown by MBE on BaF2 or Si substrate. The VECSELs are optically pumped with a 1.55 μm wavelength laser. They are operating up to above room temperature. An output power 6 mWp was reached at a temperature of +27°C. The VECSELs are temperature tunable and lasing is observed from ˜4.8 μm at -60°C down to ˜4.2 μm at +40°C heat sink temperature.

  5. 3-4.5 μm continuously tunable single mode VECSEL

    Science.gov (United States)

    Fill, M.; Felder, F.; Rahim, M.; Khiar, A.; Zogg, H.

    2012-11-01

    We present continuously tunable Vertical External Cavity Surface Emitting Lasers (VECSEL) in the mid-infrared. The structure based on IV-VI semiconductors is epitaxially grown on a Si-substrates. The VECSEL emit one single mode, which is mode hop-free tunable over 50-100 nm around the center wavelength. In this work, two different devices are presented, emitting at 3.4 μm and 3.9 μm, respectively. The lasers operate near room temperature with thermoelectric stabilization. They are optically pumped, yielding an output power >10 mWp. The axial symmetric emission beam has a half divergence angle of <3.3∘.

  6. Mid infrared resonant cavity detectors and lasers with epitaxial lead-chalcogenides

    Science.gov (United States)

    Zogg, H.; Rahim, M.; Khiar, A.; Fill, M.; Felder, F.; Quack, N.

    2010-09-01

    Wavelength tunable emitters and detectors in the mid-IR wavelength region allow applications including thermal imaging and gas spectroscopy. One way to realize such tunable devices is by using a resonant cavity. By mechanically changing the cavity length with MEMS mirror techniques, the wavelengths may be tuned over a considerable range. Resonant cavity enhanced detectors (RCED) are sensitive at the cavity resonance only. They may be applied for low resolution spectroscopy, and, when arrays of such detectors are realized, as multicolour IR-FPA or "IR-AFPA", adaptive focal plane arrays. We report the first room temperature mid-IR VECSEL (vertical external cavity surface emitting laser) with a wavelength above 3 μm. The active region is just 850 nm PbSe, followed by a 2.5 pair Bragg mirror. Output power is > 10 mW at RT.

  7. Metasurface external cavity laser

    Energy Technology Data Exchange (ETDEWEB)

    Xu, Luyao, E-mail: luyaoxu.ee@ucla.edu; Curwen, Christopher A.; Williams, Benjamin S. [Department of Electrical Engineering, University of California, Los Angeles, California 90095 (United States); California NanoSystems Institute, University of California, Los Angeles, California 90095 (United States); Hon, Philip W. C.; Itoh, Tatsuo [Department of Electrical Engineering, University of California, Los Angeles, California 90095 (United States); Chen, Qi-Sheng [Northrop Grumman Aerospace Systems, Redondo Beach, California 90278 (United States)

    2015-11-30

    A vertical-external-cavity surface-emitting-laser is demonstrated in the terahertz range, which is based upon an amplifying metasurface reflector composed of a sub-wavelength array of antenna-coupled quantum-cascade sub-cavities. Lasing is possible when the metasurface reflector is placed into a low-loss external cavity such that the external cavity—not the sub-cavities—determines the beam properties. A near-Gaussian beam of 4.3° × 5.1° divergence is observed and an output power level >5 mW is achieved. The polarized response of the metasurface allows the use of a wire-grid polarizer as an output coupler that is continuously tunable.

  8. Long-wavelength photonic integrated circuits and avalanche photodetectors

    Science.gov (United States)

    Tsou, Yi-Jen D.; Zaytsev, Sergey; Pauchard, Alexandre; Hummel, Steve; Lo, Yu-Hwa

    2001-10-01

    Fast-growing internet traffic volume require high data communication bandwidth over longer distances. Access network bottlenecks put pressure on short-range (SR) telecommunication systems. To effectively address these datacom and telecom market needs, low-cost, high-speed laser modules at 1310 to 1550 nm wavelengths and avalanche photodetectors are required. The great success of GaAs 850nm VCSEls for Gb/s Ethernet has motivated efforts to extend VCSEL technology to longer wavelengths in the 1310 and 1550 nm regimes. However, the technological challenges associated with materials for long wavelength VCSELs are tremendous. Even with recent advances in this area, it is believed that significant additional development is necessary before long wavelength VCSELs that meet commercial specifications will be widely available. In addition, the more stringent OC192 and OC768 specifications for single-mode fiber (SMF) datacom may require more than just a long wavelength laser diode, VCSEL or not, to address numerous cost and performance issues. We believe that photonic integrated circuits (PICs), which compactly integrate surface-emitting lasers with additional active and passive optical components with extended functionality, will provide the best solutions to today's problems. Photonic integrated circuits have been investigated for more than a decade. However, they have produced limited commercial impact to date primarily because the highly complicated fabrication processes produce significant yield and device performance issues. In this presentation, we will discuss a new technology platform of InP-based PICs compatible with surface-emitting laser technology, as well as a high data rate externally modulated laser module. Avalanche photodetectors (APDs) are the key component in the receiver to achieve high data rate over long transmission distance because of their high sensitivity and large gain- bandwidth product. We have used wafer fusion technology to achieve In

  9. Computational fluid dynamics modeling of mixed convection flows in buildings enclosures

    Energy Technology Data Exchange (ETDEWEB)

    Kayne, Alexander; Agarwal, Ramesh K. [Department of Mechanical Engineering and Materials Science, Washington University, St. Louis, MO 63130 (United States)

    2013-07-01

    In recent years Computational Fluid Dynamics (CFD) simulations are increasingly used to model the air circulation and temperature environment inside the rooms of residential and office buildings to gain insight into the relative energy consumptions of various HVAC systems for cooling/heating for climate control and thermal comfort. This requires accurate simulation of turbulent flow and heat transfer for various types of ventilation systems using the Reynolds-Averaged Navier-Stokes (RANS) equations of fluid dynamics. Large Eddy Simulation (LES) or Direct Numerical Simulation (DNS) of Navier-Stokes equations is computationally intensive and expensive for simulations of this kind. As a result, vast majority of CFD simulations employ RANS equations in conjunction with a turbulence model. In order to assess the modeling requirements (mesh, numerical algorithm, turbulence model etc.) for accurate simulations, it is critical to validate the calculations against the experimental data. For this purpose, we use three well known benchmark validation cases, one for natural convection in 2D closed vertical cavity, second for forced convection in a 2D rectangular cavity and the third for mixed convection in a 2D square cavity. The simulations are performed on a number of meshes of different density using a number of turbulence models. It is found that k-epsilon two-equation turbulence model with a second-order algorithm on a reasonable mesh gives the best results. This information is then used to determine the modeling requirements (mesh, numerical algorithm, turbulence model etc.) for flows in 3D enclosures with different ventilation systems. In particular two cases are considered for which the experimental data is available. These cases are (1) air flow and heat transfer in a naturally ventilated room and (2) airflow and temperature distribution in an atrium. Good agreement with the experimental data and computations of other investigators is obtained.

  10. Ice-water convection in an inclined rectangular cavity filled with a porous medium

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, X. (Dept. of Mechanical Engineering, Ecole Polytechnique de Montreal (Canada)); Kahawita, R. (Dept. of Civil Engineering, Ecole Polytechnique de Montreal (Canada))

    1994-10-01

    This paper reports on the results of a numerical study on the equilibrium state of the convection of water in the presence of ice in an inclined rectangular cavity filled with a porous medium. One side of the cavity is maintained at a temperature higher than the fusion temperature while the opposite side is cooled to a temperature lower than the fusion temperature. The two remaining sides are insulated. Results are analysed in terms of the density inversion parameter, the tilt angle, and the cooling temperature. It appears that the phenomenon of density inversion plays an important role in the equilibrium of an ice-water system when the heating temperature is below 20 . In a vertical cavity, the density inversion causes the formation of two counter-rotating vortices leading to a water volume which is wider at the bottom than at the top. When the cavity is inclined, there exist two branches of solutions which exhibit the bottom heating and the side heating characteristics, respectively (the Benard and side heating branches). Due to the inversion of density, the solution on the Benard branch may fail to converge to a steady state at small tilt angles and exhibits an oscillating behavior. On the side heating branch, a maximum heat transfer rate is obtained at a tilt angle of about 70 but the water volume was found to depend very weakly on the inclination of the cavity. Under the effect of subcooling, the interplay between conduction in the solid phase and convection in the liquid leads to an equilibrium ice-water interface which is most distorted at some intermediate cooling temperature. (orig.)

  11. Tests on model of a prestressed concrete nuclear pressure vessel with multiple cavities

    International Nuclear Information System (INIS)

    Favre, R.; Koprna, M.; Jaccoud, J.P.

    1977-01-01

    The prestressed concrete pressure vessel (prototype) is a cylinder having a diameter of 48 m and a height of 39 m. It has 25 vertical cavities (reactor, heat exchangers, heat recuperators) and 3 horizontal cavities (gas turbines of 500 kw). The cavities are closed by plugs, and their tightness is ensured by a steel lining. A model, on a scale of 1/20, made of microconcrete, was loaded in several cycles, by a uniform inner pressure in the cavities, increasing to the point of failure. The three successive stages were examined: stage of globally elastic behavior, cracking stage, ultimate stage. The behavior of the model is globally elastic up to an inner pressure of 120 to 130 kp/cm 2 , corresponding to about twice the maximum pressure of service, equal to 65 kp/cm 2 . The prestressed tendons at this stage show practically no stress increase. The first detectable cracks appear on the lateral side half-way up the model, as soon as the pressure exceeded 120 kp/cm 2 . From 150-165 kp/cm 2 , the cracking stage can be considered as achieved and the main crack pattern entirely formed. A horizontal crack continues in the middle of the barrel, as well as vertical cracks at each outer cavity. Beyond a pressure of 150-165 kp/cm 2 the ultimate stage begins. The strains of the stresses in the tendons grow more rapidly. The steel lining is highly solicited. Above about 210 kp/cm 2 the model behaves like a structure composed of a group of concrete blocks bound by the tendons and the lining. The failure (240 kp/cm 2 ) occurred through a mechanism of ejection and bending of the concrete ring at the periphery of the barrel of the vessel, which was solicited mainly in tension

  12. Applications of Gunn lasers

    Science.gov (United States)

    Balkan, N.; Chung, S. H.

    2008-04-01

    The principle of the operation of a Gunn laser is based on the band to band recombination of impact ionized non-equilibrium electron-hole pairs in propagating high field space-charge domains in a Gunn diode, which is biased above the negative differential resistance threshold and placed in a Fabry-Perot or a vertical micro cavity (VCSEL). In conventional VCSEL structures, unless specific measures such as the addition of oxide apertures and use of small windows are employed, the lack of uniformity in the density of current injected into the active region can reduce the efficiency and delay the lasing threshold. In a vertical-cavity structured Gunn device, however, the current is uniformly injected into the active region independently of the distributed Bragg reflector (DBR) layers. Therefore, lasing occurs from the entire surface of the device. The light emission from Gunn domains is an electric field induced effect. Therefore, the operation of Gunn-VCSEL or F-P laser is independent of the polarity of the applied voltage. Red-NIR VCSELs emitting in the range of 630-850 nm are also possible when Ga 1-xAl xAs (x communications. Furthermore the device may find applications as an optical clock and cross link between microwave and NIR communications. The operation of a both Gunn-Fabry-Perot laser and Gunn-VCSEL has been demonstrated by us recently. In the current work we present the potential results of experimental and theoretical studies concerning the applications together with the gain and emission characteristics of Gunn-Lasers.

  13. Tafonomía sobre asociaciones de vertebrados registradas en trampas fluviales de la Región Pampeana (Buenos Aires, Argentina

    Directory of Open Access Journals (Sweden)

    Pomi, L. H.

    2008-12-01

    Full Text Available We describe a new taphonomic mode from a fluvial system developed in channel terraces located at the Pampean Region (Quequén Grande River, Buenos Aires, Argentina associated with natural vertical cavities («marmits». We analyzed a recent (mainly aquatic vertebrate assemblage accumulated in these cavities, which operate as bone traps. Our observations suggest that these traps have accumulated isolated specimens and live or dead complete individuals during high hydric regime (torrential rains. Skeletal part representation indicates that exists a bone selection. We compare the element differential survey with different variables (structural bone density, original representation in a skeleton, size, form and volume, concluding that selection was associated with floating capabilities of missing bones (e.g. vertebrae.Se da a conocer un nuevo modo tafonómico reconocido en un sistema fluvial ubicado en la Región Pampeana (provincia de Buenos Aires, Argentina. Éste se encuentra asociado a cavidades verticales (marmitas desarrolladas en terrazas del canal principal del río Quequén Grande. Se estudió una asociación de vertebrados actuales (en su mayoría de hábitos acuáticos acumulados en estas cavidades, las cuales actuaron como trampas para los especímenes. El estudio de la muestra y observaciones realizadas in situ, sugieren que dicha trampa acumuló individuos completos (vivos o muertos y especímenes aislados durante eventos de alto régimen hídrico (lluvias torrenciales. La representación de partes anatómicas indica una selección de elementos. Se comparó la supervivencia diferencial de cada elemento con diferentes variables (densidad ósea estructural, representación original en el esqueleto, tamaño, forma y volumen, concluyendo que la selección observada se produjo por la capacidad de flotación de los elementos ausentes (p. ej., vértebras.

  14. Resonant cavity light-emitting diodes based on dielectric passive cavity structures

    Science.gov (United States)

    Ledentsov, N.; Shchukin, V. A.; Kropp, J.-R.; Zschiedrich, L.; Schmidt, F.; Ledentsov, N. N.

    2017-02-01

    A novel design for high brightness planar technology light-emitting diodes (LEDs) and LED on-wafer arrays on absorbing substrates is proposed. The design integrates features of passive dielectric cavity deposited on top of an oxide- semiconductor distributed Bragg reflector (DBR), the p-n junction with a light emitting region is introduced into the top semiconductor λ/4 DBR period. A multilayer dielectric structure containing a cavity layer and dielectric DBRs is further processed by etching into a micrometer-scale pattern. An oxide-confined aperture is further amended for current and light confinement. We study the impact of the placement of the active region into the maximum or minimum of the optical field intensity and study an impact of the active region positioning on light extraction efficiency. We also study an etching profile composed of symmetric rings in the etched passive cavity over the light emitting area. The bottom semiconductor is an AlGaAs-AlAs multilayer DBR selectively oxidized with the conversion of the AlAs layers into AlOx to increase the stopband width preventing the light from entering the semiconductor substrate. The approach allows to achieve very high light extraction efficiency in a narrow vertical angle keeping the reasonable thermal and current conductivity properties. As an example, a micro-LED structure has been modeled with AlGaAs-AlAs or AlGaAs-AlOx DBRs and an active region based on InGaAlP quantum well(s) emitting in the orange spectral range at 610 nm. A passive dielectric SiO2 cavity is confined by dielectric Ta2O5/SiO2 and AlGaAs-AlOx DBRs. Cylindrically-symmetric structures with multiple ring patterns are modeled. It is demonstrated that the extraction coefficient of light to the air can be increased from 1.3% up to above 90% in a narrow vertical angle (full width at half maximum (FWHM) below 20°). For very small oxide-confined apertures 100nm the narrowing of the FWHM for light extraction can be reduced down to 5

  15. Multiphoton microscopy in every lab: the promise of ultrafast semiconductor disk lasers

    Science.gov (United States)

    Emaury, Florian; Voigt, Fabian F.; Bethge, Philipp; Waldburger, Dominik; Link, Sandro M.; Carta, Stefano; van der Bourg, Alexander; Helmchen, Fritjof; Keller, Ursula

    2017-07-01

    We use an ultrafast diode-pumped semiconductor disk laser (SDL) to demonstrate several applications in multiphoton microscopy. The ultrafast SDL is based on an optically pumped Vertical External Cavity Surface Emitting Laser (VECSEL) passively mode-locked with a semiconductor saturable absorber mirror (SESAM) and generates 170-fs pulses at a center wavelength of 1027 nm with a repetition rate of 1.63 GHz. We demonstrate the suitability of this laser for structural and functional multiphoton in vivo imaging in both Drosophila larvae and mice for a variety of fluorophores (including mKate2, tdTomato, Texas Red, OGB-1, and R-CaMP1.07) and for endogenous second-harmonic generation in muscle cell sarcomeres. We can demonstrate equivalent signal levels compared to a standard 80-MHz Ti:Sapphire laser when we increase the average power by a factor of 4.5 as predicted by theory. In addition, we compare the bleaching properties of both laser systems in fixed Drosophila larvae and find similar bleaching kinetics despite the large difference in pulse repetition rates. Our results highlight the great potential of ultrafast diode-pumped SDLs for creating a cost-efficient and compact alternative light source compared to standard Ti:Sapphire lasers for multiphoton imaging.

  16. Blue laser diode (LD) and light emitting diode (LED) applications

    International Nuclear Information System (INIS)

    Bergh, Arpad A.

    2004-01-01

    The family of blue LEDs, edge emitting and surface emitting lasers, enable a number of applications. Blue lasers are used in digital applications such as optical storage in high density DVDs. The resolution of the spot size and hence the storage density is diffraction limited and is inversely proportional to the square of the wavelength of the laser. Other applications include printing, optical scanners, and high-resolution photo-lithography. As light emitters, blue LEDs are used for signaling and in direct view large area emissive displays. They are also making inroads into signage and LCD back-lighting, mobile platforms, and decorative accent lighting in curtains, furniture, etc. Blue LEDs produce white light either with phosphor wavelength converters or in combination with red and green LEDs. The full potential of LED light sources will require three devices to enable complete control over color and intensity. Sensing and medical/bio applications have a major impact on home security, on monitoring the environment, and on health care. New emerging diagnostic and therapeutic applications will improve the quality and reduce the cost of health care. (copyright 2004 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  17. Blue laser diode (LD) and light emitting diode (LED) applications

    Energy Technology Data Exchange (ETDEWEB)

    Bergh, Arpad A [Optoelectronics Industry Development Association (OIDA), 1133 Connecticut Avenue, NW, Suite 600, Washington, DC 20036-4329 (United States)

    2004-09-01

    The family of blue LEDs, edge emitting and surface emitting lasers, enable a number of applications. Blue lasers are used in digital applications such as optical storage in high density DVDs. The resolution of the spot size and hence the storage density is diffraction limited and is inversely proportional to the square of the wavelength of the laser. Other applications include printing, optical scanners, and high-resolution photo-lithography. As light emitters, blue LEDs are used for signaling and in direct view large area emissive displays. They are also making inroads into signage and LCD back-lighting, mobile platforms, and decorative accent lighting in curtains, furniture, etc. Blue LEDs produce white light either with phosphor wavelength converters or in combination with red and green LEDs. The full potential of LED light sources will require three devices to enable complete control over color and intensity. Sensing and medical/bio applications have a major impact on home security, on monitoring the environment, and on health care. New emerging diagnostic and therapeutic applications will improve the quality and reduce the cost of health care. (copyright 2004 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  18. Optically pumped VECSELs: review of technology and progress

    International Nuclear Information System (INIS)

    Guina, M; Rantamäki, A; Härkönen, A

    2017-01-01

    Vertical-external-cavity surface-emitting lasers (VECSELs) are the most versatile laser sources, combining unique features such as wide spectral coverage, ultrashort pulse operation, low noise properties, high output power, high brightness and compact form-factor. This paper reviews the recent technological developments of VECSELs in connection with the new milestones that continue to pave the way towards their use in numerous applications. Significant attention is devoted to the fabrication of VECSEL gain mirrors in challenging wavelength regions, especially at the yellow and red wavelengths. The reviewed fabrication approaches address wafer-bonded VECSEL structures as well as the use of hybrid mirror structures. Moreover, a comprehensive summary of VECSEL characterization methods is presented; the discussion covers different stages of VECSEL development and different operation regimes, pointing out specific characterization techniques for each of them. Finally, several emerging applications are discussed, with emphasis on the unique application objectives that VECSELs render possible, for example in atom and molecular physics, dermatology and spectroscopy. (topical review)

  19. Design and properties of high-power highly-coherent single-frequency VECSEL emitting in the near- to mid-IR for photonic applications

    Science.gov (United States)

    Garnache, A.; Laurain, A.; Myara, M.; Sellahi, M.; Cerutti, L.; Perez, J. P.; Michon, A.; Beaudoin, G.; Sagnes, I.; Cermak, P.; Romanini, D.

    2017-11-01

    We demonstrate high power (multiwatt) low noise single frequency operation of tunable compact verical-external- cavity surface-emitting-lasers exhibiting a low divergence high beam quality, of great interest for photonics applications. The quantum-well based lasers are operating in CW at RT at 1μm and 2.3μm exploiting GaAs and Sb technologies. For heat management purpose the VECSEL membranes were bonded on a SiC substrate. Both high power diode pumping (using GaAs commercial diode) at large incidence angle and electrical pumping are developed. The design and physical properties of the coherent wave are presented. We took advantage of thermal lens-based stability to develop a short (0.5-5mm) external cavity without any intracavity filter. We measured a low divergence circular TEM00 beam (M2 = 1.2) close to diffraction limit, with a linear light polarization (> 30 dB). The side mode suppression ratio is > 45 dB. The free running laser linewidth is 37 kHz limited by pump induced thermal fluctuations. Thanks to this high-Q external cavity approach, the frequency noise is low and the dynamics is in the relaxation-oscillation-free regime, exhibiting low intensity noise (laser power and coherence will be discussed. These design/properties can be extended to other wavelengths.

  20. Additional compound semiconductor nanowires for photonics

    Science.gov (United States)

    Ishikawa, F.

    2016-02-01

    GaAs related compound semiconductor heterostructures are one of the most developed materials for photonics. Those have realized various photonic devices with high efficiency, e. g., lasers, electro-optical modulators, and solar cells. To extend the functions of the materials system, diluted nitride and bismide has been paid attention over the past decade. They can largely decrease the band gap of the alloys, providing the greater tunability of band gap and strain status, eventually suppressing the non-radiative Auger recombinations. On the other hand, selective oxidation for AlGaAs is a vital technique for vertical surface emitting lasers. That enables precisely controlled oxides in the system, enabling the optical and electrical confinement, heat transfer, and mechanical robustness. We introduce the above functions into GaAs nanowires. GaAs/GaAsN core-shell nanowires showed clear redshift of the emitting wavelength toward infrared regime. Further, the introduction of N elongated the carrier lifetime at room temperature indicating the passivation of non-radiative surface recombinations. GaAs/GaAsBi nanowire shows the redshift with metamorphic surface morphology. Selective and whole oxidations of GaAs/AlGaAs core-shell nanowires produce semiconductor/oxide composite GaAs/AlGaOx and oxide GaOx/AlGaOx core-shell nanowires, respectively. Possibly sourced from nano-particle species, the oxide shell shows white luminescence. Those property should extend the functions of the nanowires for their application to photonics.

  1. Fusion of Terra-MODIS and Landsat TM data for geothermal sites investigation in Jiangsu Province, China

    Science.gov (United States)

    Chen, Shengbo

    2006-01-01

    Geothermal resources are generally confined to areas of the Earth's crust where heat flow higher than in surrounding areas heats the water contained in permeable rocks (reservoirs) at depth. It is becoming one of attractive solutions for clean and sustainable energy future for the world. The geothermal fields commonly occurs at the boundaries of plates, and only occasionally in the middle of a plate. The study area, Jiangsu Province, as an example, located in the east of China, is a potential area of geothermal energy. In this study, Landsat thematic Mapper (TM) data were georeferenced to position spatially the geothermal energy in the study area. Multi-spectral infrared data of Moderate Resolution Imaging Spectroradiometer (MODIS) aboard the Terra platform were georeferenced to Landsat TM images. Based on the Wien Displacement Law, these infrared data indicate the surface emitted radiance under the same atmospheric condition, and stand for surface bright temperature respectively. Thus, different surface bright temperature data from Terra-MODIS band 20 or band 31 (R), together with Landsat TM band 4 (G) and band 3 (B) separately, were made up false color composite images (RGB) to generate the distribution maps of surface bright temperatures. Combing with geologic environment and geophysical anomalies, the potential area of geothermal energy with different geo-temperature were mapped respectively. Specially, one geothermal spot in Qinhu Lake Scenery Area in Taizhou city was validated by drilling, and its groundwater temperature is up to some 51°.

  2. Secondary ion emission from cleaned surfaces bombarded by 100 MeV accelerator beams at the GSI Darmstadt

    International Nuclear Information System (INIS)

    Wien, K.; Becker, O.; Guthier, W.; Knippelberg, W.; Koczon, P.

    1988-01-01

    The 1.4 MeV/n beam facility for the UNILAC/GSI has been used to study secondary ion emission from surfaces cleaned under UHV conditions by ion etching or cleaving of crystals. The desorption phenomena observed by means of TOF mass spectrometry can be classified as follows: (1) Clean metal surfaces emit metal ions being ejected by atomic collisions cascades. Electronic excitation of surface states seems to support ionization. (2) The desorption of contaminants adsorbed at the metal surface is strongly correlated with the electronic energy loss of the projectiles - even, if the content of impurities is very low. (3) Ion formation at the epitaxial surface of fluoride crystals as CaF 2 , MgF 2 and NaF is initiated by the electronic excitation of the crystal. At high beam energies the mass spectrum is dominated by a series of cluster ions. These cluster ions disappear below a certain energy deposit threshold, whereas small atomic ions are observed over the whole energy range

  3. Detection of microparticles in dynamic processes

    International Nuclear Information System (INIS)

    Ten, K A; Pruuel, E R; Kashkarov, A O; Rubtsov, I A; Shechtman, L I; Zhulanov, V V; Tolochko, B P; Rykovanov, G N; Muzyrya, A K; Smirnov, E B; Stolbikov, M Yu; Prosvirnin, K M

    2016-01-01

    When a metal plate is subjected to a strong shock impact, its free surface emits a flow of particles of different sizes (shock-wave “dusting”). Traditionally, the process of dusting is investigated by the methods of pulsed x-ray or piezoelectric sensor or via an optical technique. The particle size ranges from a few microns to hundreds of microns. The flow is assumed to include also finer particles, which cannot be detected with the existing methods yet. On the accelerator complex VEPP-3-VEPP-4 at the BINP there are two experiment stations for research on fast processes, including explosion ones. The stations enable measurement of both passed radiation (absorption) and small-angle x-ray scattering on synchrotron radiation (SR). Radiation is detected with a precision high-speed detector DIMEX. The detector has an internal memory of 32 frames, which enables recording of the dynamics of the process (shooting of movies) with intervals of 250 ns to 2 μ s. Flows of nano- and microparticles from free surfaces of various materials (copper and tin) have been examined. Microparticle flows were emitted from grooves of 50-200 μ s in size and joints (gaps) between metal parts. With the soft x-ray spectrum of SR one can explore the dynamics of a single microjet of micron size. The dynamics of density distribution along micro jets were determined. Under a shock wave (∼ 60 GPa) acting on tin disks, flows of microparticles from a smooth surface were recorded. (paper)

  4. Toward continuous-wave operation of organic semiconductor lasers

    Science.gov (United States)

    Sandanayaka, Atula S. D.; Matsushima, Toshinori; Bencheikh, Fatima; Yoshida, Kou; Inoue, Munetomo; Fujihara, Takashi; Goushi, Kenichi; Ribierre, Jean-Charles; Adachi, Chihaya

    2017-01-01

    The demonstration of continuous-wave lasing from organic semiconductor films is highly desirable for practical applications in the areas of spectroscopy, data communication, and sensing, but it still remains a challenging objective. We report low-threshold surface-emitting organic distributed feedback lasers operating in the quasi–continuous-wave regime at 80 MHz as well as under long-pulse photoexcitation of 30 ms. This outstanding performance was achieved using an organic semiconductor thin film with high optical gain, high photoluminescence quantum yield, and no triplet absorption losses at the lasing wavelength combined with a mixed-order distributed feedback grating to achieve a low lasing threshold. A simple encapsulation technique greatly reduced the laser-induced thermal degradation and suppressed the ablation of the gain medium otherwise taking place under intense continuous-wave photoexcitation. Overall, this study provides evidence that the development of a continuous-wave organic semiconductor laser technology is possible via the engineering of the gain medium and the device architecture. PMID:28508042

  5. Nonlinear Optics: Materials, Fundamentals, and Applications. Postdeadline papers

    Science.gov (United States)

    1992-08-01

    The Nonlinear Optics: Materials, Fundamentals, and Applications conference was held on 17-21 Aug. 1992. The following topics were addressed: subpicosecond time resolved four-wave mixing spectroscopy in heteroepitaxial ZnSe thin layers; anisotropic two-photon transition in GaAs/AlGaAs multiple quantum well waveguides; two picosecond, narrow-band, tunable, optical parametric systems using BBO and LBO; second generation in an optically active liquid: experimental observation of a fourth-order optical nonlinearity due to molecular chirality; optical image recognition system implemented with a 3-D memory disk; phase-matched second-harmonic generation in waveguides of polymeric Langmuir-Blodgett films; fluence dependent dynamics observed in the resonant third-order optical response of C60 and C70 films; temporal modulation of spatial optical solitons: a variational approach; measurements of light-scattering noise during two-wave mixing in a Kerr medium; excess noise introduced by beam propagation through an atomic vapor; an approach to all-optical switching based on second-order nonlinearities; multilayer, nonlinear ARROW waveguides for surface emitted sum-frequency mixing; energy scaling of SBS phase conjugate mirrors to 4J; vector versus scalar theory for the double phase conjugate mirror; cross-talk and error probability in counter-beam lambda-multiplexed digital holograms; and modal growth of SHG in doped silica thin film waveguides.

  6. A new method of readout in radiochromic film dosimetry

    International Nuclear Information System (INIS)

    Kellermann, Peer Oliver; Gornik, Erich; Ertl, Adolf

    1998-01-01

    Radiochromic film as a dosimetry medium offers several advantages in high-resolution radiography. A new technique of readout was developed to measure the optical density distributions of the film in purely directed light. This technique implements radiochromic film dosimetry near the film's absorption maximum by using a single-mode top-surface emitting laser diode (675.2 nm). The effective sensitivity of the film, compared with a helium-neon laser densitometer (632.8 nm), is increased approximately threefold. Good accuracy, high spatial resolution and simple assembly of the readout system is achieved. Beam profiles of the four final collimator helmets of a Leksell Gamma Knife (Elekta Inc., Sweden) were experimentally determined. Measured profiles and full-widths at half maximum are consistent with the computer generated data of the dose planning system (Kula 4.4, Elekta Inc., Sweden). The output factor of the 4 mm collimator (the smallest collimator with the steepest dose gradient), essential for the application of well defined doses, was checked. The measurements established an output factor of 826±9 that lies 9±1% lower than the adjusted one. (author)

  7. CCST [Center for Compound Semiconductor Technology] research briefs

    International Nuclear Information System (INIS)

    Zipperian, T.E.; Voelker, E.R.

    1989-12-01

    This paper discusses the following topics: theoretical predictions of valence and conduction band offsets in III-V semiconductors; reflectance modulation of a semiconductor superlattice optical mirror; magnetoquantum oscillations of the phonon-drag thermoelectric power in quantum wells; correlation between photoluminescence line shape and device performance of p-channel strained-layer materials; control of threading dislocations in heteroepitaxial structures; improved growth of CdTe on GaAs by patterning; role of structure threading dislocations in relaxation of highly strained single-quantum-well structures; InAlAs growth optimization using reflection mass spectrometry; nonvolatile charge storage in III-V heterostructures; optically triggered thyristor switches; InAsSb strained-layer superlattice infrared detectors with high detectivities; resonant periodic gain surface-emitting semiconductor lasers; performance advantages of strained-quantum-well lasers in AlGaAs/InGaAs; optical integrated circuit for phased-array radar antenna control; and deposition and novel device fabrication from Tl 2 Ca 2 Ba 2 Cu 3 O y thin films

  8. Synthesis and optical properties modulation of ZnO/Eu2O3 nanocable arrays

    Science.gov (United States)

    Yang, Lei; She, Yajuan; Zhao, Shihua; Yue, Shihai; Wang, Qian; Hu, Aiping; Zhang, Wei

    2010-11-01

    White-light-emitting materials have attracted considerable attention because of their applications, such as large-surface emitting devices and displays. However, simply mixing nanoparticles would result in uneven color. Nanocables are expected to improve the chemical stability and color uniformity. Herein we demonstrate the synthesis of Eu2O3/ZnO nanocable arrays embedded in anodic alumina template via a versatile, simple, and cheap method. In order to control the composition of the cable with low cost, a two-step synthesis including an electric field deposition and a sol-gel template approach is used to fabricate the nanocable. The product is investigated by x-ray powder diffraction, transmission electron microscopy, selected area electron diffraction, and photoluminescence (PL) spectrum. The results show that ordered Eu2O3/ZnO nanocable arrays with an average inside diameter of 20-40 nm and wall thickness of 20-40 nm were prepared. By adjusting the excitation wavelength, change of the emitting color of the cables from blue to white could be obtained. Energy and charge transfer were found by investigating the electronic transition and recombination in the PL process. These arrays are promising for applications in display, white phosphors, and ultraviolet detectors owing to the special optical properties. And this method may be of much significance in the synthesis of nanocables with the controllable composition.

  9. Integration of organic LEDs with inorganic LEDs for a hybrid lighting system

    Science.gov (United States)

    Kong, H. J.; Park, J. W.; Kim, Y. M.

    2013-01-01

    We demonstrate that a surface-emitting hybrid light source can be realized by a combination of organic and inorganic light-emitting devices (LEDs). To this end, a blue inorganic LED bar is deployed at one side of a transparent light guide plate (LGP), and a yellow organic LED (OLED) is in contact with the rear surface of the LGP. In such a configuration, it is found that the overall luminance is almost equivalent to the sum of the luminances measured from each light source, and the overall luminance uniformity is determined mainly by the luminance uniformity of the OLED panel at high luminances. We have achieved a white color showing the Commission Internationale d'Eclairage (CIE) chromaticity coordinates of (x = 0.34, y = 0.33), the power efficiency of 9.3 lm/W, the luminance uniformity of 63% at the luminance of 3100 cd m-2, the color rendering index as high as 89.3, and the correlated color temperature finely tunable within the range between 3000 and 8000 K. Such a system facilitates color tuning by adjusting their luminous intensities and hence the implementation of the emotional lighting system.

  10. Integration of organic LEDs with inorganic LEDs for a hybrid lighting system

    International Nuclear Information System (INIS)

    Kong, H J; Kim, Y M; Park, J W

    2013-01-01

    We demonstrate that a surface-emitting hybrid light source can be realized by a combination of organic and inorganic light-emitting devices (LEDs). To this end, a blue inorganic LED bar is deployed at one side of a transparent light guide plate (LGP), and a yellow organic LED (OLED) is in contact with the rear surface of the LGP. In such a configuration, it is found that the overall luminance is almost equivalent to the sum of the luminances measured from each light source, and the overall luminance uniformity is determined mainly by the luminance uniformity of the OLED panel at high luminances. We have achieved a white color showing the Commission Internationale d'Eclairage (CIE) chromaticity coordinates of (x = 0.34, y = 0.33), the power efficiency of 9.3 lm/W, the luminance uniformity of 63% at the luminance of 3100 cd m –2 , the color rendering index as high as 89.3, and the correlated color temperature finely tunable within the range between 3000 and 8000 K. Such a system facilitates color tuning by adjusting their luminous intensities and hence the implementation of the emotional lighting system. (paper)

  11. Photonic quasi-crystal terahertz lasers

    Science.gov (United States)

    Vitiello, Miriam Serena; Nobile, Michele; Ronzani, Alberto; Tredicucci, Alessandro; Castellano, Fabrizio; Talora, Valerio; Li, Lianhe; Linfield, Edmund H.; Davies, A. Giles

    2014-12-01

    Quasi-crystal structures do not present a full spatial periodicity but are nevertheless constructed starting from deterministic generation rules. When made of different dielectric materials, they often possess fascinating optical properties, which lie between those of periodic photonic crystals and those of a random arrangement of scatterers. Indeed, they can support extended band-like states with pseudogaps in the energy spectrum, but lacking translational invariance, they also intrinsically feature a pattern of ‘defects’, which can give rise to critically localized modes confined in space, similar to Anderson modes in random structures. If used as laser resonators, photonic quasi-crystals open up design possibilities that are simply not possible in a conventional periodic photonic crystal. In this letter, we exploit the concept of a 2D photonic quasi crystal in an electrically injected laser; specifically, we pattern the top surface of a terahertz quantum-cascade laser with a Penrose tiling of pentagonal rotational symmetry, reaching 0.1-0.2% wall-plug efficiencies and 65 mW peak output powers with characteristic surface-emitting conical beam profiles, result of the rich quasi-crystal Fourier spectrum.

  12. IV-VI mid-IR tunable lasers and detectors with external resonant cavities

    Science.gov (United States)

    Zogg, H.; Rahim, M.; Khiar, A.; Fill, M.; Felder, F.; Quack, N.; Blunier, S.; Dual, J.

    2009-08-01

    Wavelength tunable emitters and detectors in the mid-IR wavelength region allow applications including thermal imaging and spectroscopy. Such devices may be realized using a resonant cavity. By mechanically changing the cavity length with MEMS mirror techniques, the wavelengths may be tuned over a considerable range. Vertical external cavity surface emitting lasers (VECSEL) may be applied for gas spectroscopy. Resonant cavity enhanced detectors (RCED) are sensitive at the cavity resonance only. They may be applied for low resolution spectroscopy, and, when arrays of such detectors are realized, as multicolor IR-FPA or IR-AFPA (IR-adaptive focal plane arrays). We review mid-infrared RCEDs and VECSELs using narrow gap IV-VI (lead chalcogenide) materials like PbTe and PbSe as the active medium. IV-VIs are fault tolerant and allow easy wavelength tuning. The VECSELs operate up to above room temperature and emit in the 4 - 5 μm range with a PbSe active layer. RCEDs with PbTe absorbing layers above 200 K operating temperature have higher sensitivities than the theoretical limit for a similar broad-band detector coupled with a passive tunable band-filter.

  13. GPU accelerated study of heat transfer and fluid flow by lattice Boltzmann method on CUDA

    Science.gov (United States)

    Ren, Qinlong

    ,000 US dollars. The release of NVIDIA's CUDA architecture which includes both hardware and programming environment in 2007 makes GPU computing attractive. Due to its highly parallel nature, lattice Boltzmann method is successfully ported into GPU with a performance benefit during the recent years. In the current work, LBM CUDA code is developed for different fluid flow and heat transfer problems. In this dissertation, lattice Boltzmann method and immersed boundary method are used to study natural convection in an enclosure with an array of conduting obstacles, double-diffusive convection in a vertical cavity with Soret and Dufour effects, PCM melting process in a latent heat thermal energy storage system with internal fins, mixed convection in a lid-driven cavity with a sinusoidal cylinder, and AC electrothermal pumping in microfluidic systems on a CUDA computational platform. It is demonstrated that LBM is an efficient method to simulate complex heat transfer problems using GPU on CUDA.

  14. Experimental and theoretical studies on the high pressure vessel

    International Nuclear Information System (INIS)

    So, Dong Sup

    1992-02-01

    A High Pressure Melt Ejection (HPME) is one of the most important phenomena relevant to Direct Containment Heating(DCH) which could lead to an early containment failure in a several accident of PWRs. Dispersal of core debris following a postulated high pressure failure of PWR reactor vessel has been investigated by experimental works and one-dimensional computer modeling to find the relation between the fraction of melt simulant retained in the cavity and the reactor vessel initial conditions as well as to examine the hydrodynamic processes in a reactor cavity geometry. Simulated HPME experiments have been performed with two small-scale (1/25-th and 1/41-st) transparent reactor cavity models of the Young-Gwang unit 1 and 2. Wood's metal and water have been used as melt sumulants while high pressure nitrogen and carbon dioxide have been used as driver gases to simulate the blowdown steam and gas from the breach of the reactor pressure vessel. The high speed movies of the transient tests showed that no fraction of the melt simulant exits the cavity model via the vertical cavity tunnel under its own momentum, and that the discharged simulant from the pressure vessel exits the reactor cavity model during the gas blowdown. The principal removal mechanism seemed to be a combined mechanism of film entrainment and particle levitation due to the driving force of the blowdown gas. Experimental data for the fraction of melt simulant retained in the cavity model (Y f ) during a postulated scenario of the HPME from PWR pressure vessels have been obtained as a function of various test parameters. These data have been used to develop a correlation for Y f that fits all the data (a total of 313 data points) within the standard deviation of 0.054 by means of dimensional analysis and nonlinear least squares optimization technique. The basic effects of important parameters used to describe the HPME accident sequence on the Y f are determined based on the correlation obtained here and

  15. REDUPP. Second annual report

    International Nuclear Information System (INIS)

    Zetterstroem Evins, L.; Vaehaenen, M.

    2013-05-01

    Understanding the interactions between solid surface and fluid during the dissolution process is essential for developing a model for spent fuel dissolution. This project aims to enhance the understanding of the dissolution process of fluorite-type materials; these have the same crystal structure as nuclear fuel. CaF 2 , CeO 2 , ThO 2 and UO 2 are here used in dissolution studies during which the evolution of the solution and surface is monitored as the dissolution proceeds. For the UO 2 -experiments, the effect of natural groundwater on the dissolution of a surface emitting alpha radiation is investigated. The goal is to use the experimental results in combination with first-principles modelling to formulate a model describing the surfaces of dissolving fluorite-type materials. The project is on-going and this report presents the progress after two years. The experimental results reported here point towards effects of surface area and surface area to volume ratios, exposed grain boundaries, and bulk vs. 'local' solubility. The importance of well-controlled analytical conditions and high-resolution measurements are emphasized, in order to distinguish differences between effects of remnant fines, amorphous precipitates, grain boundaries, surface defects and crystallographic orientation of the exposed surfaces. The progress with regards to modelling shows that a surface model is formulated which can predict the surface formation energies of all crystal planes of the fluorite structure. It has been shown that this quantity can be related with the experimental surface stability during dissolution, and that for any material with the fluorite structure the same relation between computed surface stability and experimental stability (dissolution rate) will hold. The work on setting up a model of the dissolution process is ongoing; this kind of modelling is computationally very demanding as it requires a combination of molecular dynamics simulations and ab initio electronic

  16. Improvement of electron emission characteristics of porous silicon emitter by using cathode reduction and electrochemical oxidation

    Energy Technology Data Exchange (ETDEWEB)

    Li, He; Wenjiang, Wang, E-mail: wwj@mail.xjtu.edu.cn; Xiaoning, Zhang

    2017-03-31

    Highlights: • An electron emitter based on porous silicon having the strong application potential was prepared in the studying. • A new simple and convenient post-treat technique was proposed to improve the electron emission properties of the PS emitter. • It demonstrated that the improving of the PS morphology and the oxygen distribution is very important to the PS emitter. - Abstract: A new simple and convenient post-treat technique combined the cathode reduction (CR) and electrochemical oxidation (ECO) was proposed to improve the electron emission properties of the surface-emitting cold cathodes based on the porous silicon (PS). It is demonstrated here that by introducing this new technique combined CR and ECO, the emission properties of the diode have been significantly improved than those as-prepared samples. The experimental results showed that the emission current densities and efficiencies of sample treated by CR were 62 μA/cm{sup 2} and 12.10‰, respectively, nearly 2 orders of magnitude higher than those of as-prepared sample. Furthermore, the CR-treated PS emitter shows higher repeatability and stability compared with the as-prepared PS emitter. The scanning electron microscope (SEM), atomic force microscope (AFM), energy dispersive spectrometer (EDS), furier transformed infrared (FTIR) spectroscopy results indicated that the improved mechanism is mainly due to the passivation of the PS, which not only improve the PS morphology by the passivation of the H{sup +} but also improve the uniformity of the oxygen content distribution in the whole PS layer. Therefore, the method combined the CR treatment and ECO is expected to be a valuable technique to enhance the electron emission characteristics of the PS emitter.

  17. Improvement of electron emission characteristics of porous silicon emitter by using cathode reduction and electrochemical oxidation

    International Nuclear Information System (INIS)

    Li, He; Wenjiang, Wang; Xiaoning, Zhang

    2017-01-01

    Highlights: • An electron emitter based on porous silicon having the strong application potential was prepared in the studying. • A new simple and convenient post-treat technique was proposed to improve the electron emission properties of the PS emitter. • It demonstrated that the improving of the PS morphology and the oxygen distribution is very important to the PS emitter. - Abstract: A new simple and convenient post-treat technique combined the cathode reduction (CR) and electrochemical oxidation (ECO) was proposed to improve the electron emission properties of the surface-emitting cold cathodes based on the porous silicon (PS). It is demonstrated here that by introducing this new technique combined CR and ECO, the emission properties of the diode have been significantly improved than those as-prepared samples. The experimental results showed that the emission current densities and efficiencies of sample treated by CR were 62 μA/cm"2 and 12.10‰, respectively, nearly 2 orders of magnitude higher than those of as-prepared sample. Furthermore, the CR-treated PS emitter shows higher repeatability and stability compared with the as-prepared PS emitter. The scanning electron microscope (SEM), atomic force microscope (AFM), energy dispersive spectrometer (EDS), furier transformed infrared (FTIR) spectroscopy results indicated that the improved mechanism is mainly due to the passivation of the PS, which not only improve the PS morphology by the passivation of the H"+ but also improve the uniformity of the oxygen content distribution in the whole PS layer. Therefore, the method combined the CR treatment and ECO is expected to be a valuable technique to enhance the electron emission characteristics of the PS emitter.

  18. Radiative effect of black carbon aerosol on a squall line case in North China

    Science.gov (United States)

    Fu, Shizuo; Deng, Xin; Li, Zhe; Xue, Huiwen

    2017-11-01

    The radiative effect of black carbon aerosol (BC) on a squall line case in north China is studied with the Weather Research and Forecasting model. Before the initiation of the squall line, the surface-emitted BC is mixed only in the boundary layer (BL). BC is then transported from the BL into the free troposphere by the updrafts in the squall line system. Once distributed in the atmosphere, BC absorbs solar radiation and heats the surrounding air. The maximum increase of temperature is 0.05 K for the moderately polluted case bc2 and 0.37 K for the heavily polluted case bc20. In case bc2, where the BC concentration is not very high, the solar flux reaching the surface, the sensible heat flux, and the latent heat flux are not significantly affected by BC. In case bc20, the solar flux reaching the surface, the sensible heat flux, and the latent heat flux are reduced by up to 80, 30, and 21 W m- 2, respectively. The reduced surface evaporation leads to a reduced vapor amount at the early stage. After some time, the heating effect causes a large-scale convergence and brings slightly more vapor into the domain. The effect of BC on the cold pool strength and low-level wind shear is small and hence does not significantly affect the triggering of new convections. In addition, our results show that the effect of BC is negligible on the strength and rain rate of the squall line case.

  19. High-contrast gratings for long-wavelength laser integration on silicon

    Science.gov (United States)

    Sciancalepore, Corrado; Descos, Antoine; Bordel, Damien; Duprez, Hélène; Letartre, Xavier; Menezo, Sylvie; Ben Bakir, Badhise

    2014-02-01

    Silicon photonics is increasingly considered as the most promising way-out to the relentless growth of data traffic in today's telecommunications infrastructures, driving an increase in transmission rates and computing capabilities. This is in fact challenging the intrinsic limit of copper-based, short-reach interconnects and microelectronic circuits in data centers and server architectures to offer enough modulation bandwidth at reasonable power dissipation. In the context of the heterogeneous integration of III-V direct-bandgap materials on silicon, optics with high-contrast metastructures enables the efficient implementation of optical functions such as laser feedback, input/output (I/O) to active/passive components, and optical filtering, while heterogeneous integration of III-V layers provides sufficient optical gain, resulting in silicon-integrated laser sources. The latest ensure reduced packaging costs and reduced footprint for the optical transceivers, a key point for the short reach communications. The invited talk will introduce the audience to the latest breakthroughs concerning the use of high-contrast gratings (HCGs) for the integration of III-V-on-Si verticalcavity surface-emitting lasers (VCSELs) as well as Fabry-Perot edge-emitters (EELs) in the main telecom band around 1.55 μm. The strong near-field mode overlap within HCG mirrors can be exploited to implement unique optical functions such as dense wavelength division multiplexing (DWDM): a 16-λ100-GHz-spaced channels VCSEL array is demonstrated. On the other hand, high fabrication yields obtained via molecular wafer bonding of III-V alloys on silicon-on-insulator (SOI) conjugate excellent device performances with cost-effective high-throughput production, supporting industrial needs for a rapid research-to-market transfer.

  20. Size-segregated emissions and metal content of vehicle-emitted particles as a function of mileage: Implications to population exposure

    International Nuclear Information System (INIS)

    Golokhvast, Kirill S.; Chernyshev, Valery V.; Chaika, Vladimir V.; Ugay, Sergey M.; Zelinskaya, Elena V.; Tsatsakis, Aristidis M.; Karakitsios, Spyros P.; Sarigiannis, Denis A.

    2015-01-01

    The study aims at investigating the characteristics (size distribution, active surface and metal content) of particles emitted by cars as a function of mileage using a novel methodology for characterizing particulate emissions captured by Exhaust Gas Suspension (EGS). EGS was obtained by passing the exhaust gases through a container of deionized water. EGS analysis was performed using laser granulometry, electron scanning microscopy, and high resolution mass spectrometry. Implications of the differences in key features of the emitted particles on population exposure were investigated using numerical simulation for estimating size-segregated PM deposition across human respiratory tract (HRT). It was found that vehicle mileage, age and the respective emissions class have almost no effect on the size distribution of the exhaust gas particulate released into the environment; about half of the examined vehicles with low mileage were found to release particles of aerodynamic diameter above 10 μm. The exhaust gas particulate detected in the EGS of all cars can be classified into three major size classes: (1) 0.1–5 µm – soot and ash particles, metals (Au, Pt, Pd, Ir); (2) 10–30 µm – metal (Cr, Fe, Cu, Zr, Ni) and ash particles; (3) 400–1,000 µm – metal (Fe, Cr, Pb) and ash particles. Newer vehicles with low mileage are substantial sources of soot and metal particles with median diameter of 200 nm with a higher surface area (up to 89,871.16 cm 2 /cm 3 ). These tend to deposit in the lower part of the human respiratory tract. - Highlights: • Car mileage has virtually no effect on the size of the solid particles released. • Newer diesel vehicles emit particles of lower aerodynamic diameter. • Particle active surface emitted by newer vehicles is on average 3 times higher. • Real-life emissions were translated into actual internal PM exposure.

  1. Modeling of urban atmospheric pollution and impact on health

    International Nuclear Information System (INIS)

    Myrto, Valari

    2009-10-01

    The goal of this dissertation, is to develop a methodology that provides an improved knowledge of the associations between atmospheric contaminant concentrations and health impact. The propagation of uncertainties from input data to the output concentrations through a Chemistry Transport Model was first studied. The influence of the resolutions of meteorological parameters and emissions data were studied separately, and their relative role was compared. It was found that model results do not improve linearly with the resolution of emission input. A critical resolution was found, beyond which model error becomes higher and the model breaks down. Based on this first investigation concerning the direct down scaling, further research focused on sub grid scale modeling. Thus, a statistical down scaling approach was adopted for the modeling of sub grid-scale concentration variability due to heterogeneous surface emissions. Emission fractions released from different types of sources (industry, roads, residential, natural etc.) were calculated from a high-resolution emission inventory. Then emission fluxes were mapped on surfaces emitting source-specific species. Simulations were run independently over the defined micro-environments allowing the modeling of sub grid-scale concentration variability. Sub grid scale concentrations were therefore combined with demographic and human activity data to provide exposure estimates. The spatial distribution of human exposure was parameterized through a Monte-Carlo model. The new information concerning exposure variability was added to an existing epidemiological model to study relative health risks. A log-linear Poisson regression model was used for this purpose. The principal outcome of the investigation was that a new functionality was added to the regression model which allows the dissociation of the health risk associated with each pollutant (e.g. NO 2 and PM 2.5 ). (author)

  2. Power of the uranium plate of Naiade; Puissance de la plaque d'uranium de Naiade

    Energy Technology Data Exchange (ETDEWEB)

    Lafore, P; Millot, J P; Rastoin, J [Commissariat a l' Energie Atomique, Saclay (France). Centre d' Etudes Nucleaires

    1958-07-01

    1. Calculation. Knowing the incident current of thermal neutrons, the sources of fast neutrons inside the plate are deduced. The fast flux leaving the plate is then determined. Isotropically, 0.57 fast neutrons come out for each incident thermal neutron. 2. Experiments. The incident thermal flux is measured by means of manganese detectors on reaching the plate, and estimated from the flux leaving the graphite. The fast flux coming out is measured with dose-rate films. The absorption of the fast flux in the swimming-pool water is measured. 3. Results. The uranium plate is equivalent to a disc placed at its surface emitting isotropically 3.8 x 10{sup 7} fast neutrons per cm{sup 2}/s, when Zoe operates at 100 kW. This result is valid to about 10 per cent. (author) [French] 1.Calcul. Connaissant le courant de neutrons thermiques incident, on deduit les sources de rapides a l'interieur de la plaque. Puis on determine le flux de rapides sortants de la plaque. Il sort, de facon isotrope, 0,57 neutrons rapides par neutron thermique incident. 2. Experiences. Le flux thermique incident est mesure par des detecteurs au manganese a l'arrivee sur la plaque et estime a partir du flux a la sortie du graphite. Le flux rapide sortant est mesure avec des films de dose. On mesure l'absorption du flux rapide dans l'eau de la piscine. 3. Resultats. La plaque d'uranium est equivalente a un disque place a sa surface emettant isotropiquement, 3,8 x 10{sup 7} neutrons rapides par cm{sup 2}/s, lorsque ZOE marche a 100 kW. Ce resultat est valable a 10 pour cent pres. (auteur)

  3. Size-segregated emissions and metal content of vehicle-emitted particles as a function of mileage: Implications to population exposure

    Energy Technology Data Exchange (ETDEWEB)

    Golokhvast, Kirill S.; Chernyshev, Valery V.; Chaika, Vladimir V.; Ugay, Sergey M. [Far Eastern Federal University, Vladivostok (Russian Federation); Zelinskaya, Elena V. [National Research Irkutsk State Technical University, Irkutsk (Russian Federation); Tsatsakis, Aristidis M. [University of Crete, Medical School, Department of Toxicology and Forensic Science, Heraklion, Crete (Greece); Karakitsios, Spyros P. [Aristotle University of Thessaloniki, Department of Chemical Engineering, Thessaloniki (Greece); Sarigiannis, Denis A., E-mail: denis@eng.auth.gr [Aristotle University of Thessaloniki, Department of Chemical Engineering, Thessaloniki (Greece)

    2015-10-15

    The study aims at investigating the characteristics (size distribution, active surface and metal content) of particles emitted by cars as a function of mileage using a novel methodology for characterizing particulate emissions captured by Exhaust Gas Suspension (EGS). EGS was obtained by passing the exhaust gases through a container of deionized water. EGS analysis was performed using laser granulometry, electron scanning microscopy, and high resolution mass spectrometry. Implications of the differences in key features of the emitted particles on population exposure were investigated using numerical simulation for estimating size-segregated PM deposition across human respiratory tract (HRT). It was found that vehicle mileage, age and the respective emissions class have almost no effect on the size distribution of the exhaust gas particulate released into the environment; about half of the examined vehicles with low mileage were found to release particles of aerodynamic diameter above 10 μm. The exhaust gas particulate detected in the EGS of all cars can be classified into three major size classes: (1) 0.1–5 µm – soot and ash particles, metals (Au, Pt, Pd, Ir); (2) 10–30 µm – metal (Cr, Fe, Cu, Zr, Ni) and ash particles; (3) 400–1,000 µm – metal (Fe, Cr, Pb) and ash particles. Newer vehicles with low mileage are substantial sources of soot and metal particles with median diameter of 200 nm with a higher surface area (up to 89,871.16 cm{sup 2}/cm{sup 3}). These tend to deposit in the lower part of the human respiratory tract. - Highlights: • Car mileage has virtually no effect on the size of the solid particles released. • Newer diesel vehicles emit particles of lower aerodynamic diameter. • Particle active surface emitted by newer vehicles is on average 3 times higher. • Real-life emissions were translated into actual internal PM exposure.

  4. Energy scaling of terahertz-wave parametric sources.

    Science.gov (United States)

    Tang, Guanqi; Cong, Zhenhua; Qin, Zengguang; Zhang, Xingyu; Wang, Weitao; Wu, Dong; Li, Ning; Fu, Qiang; Lu, Qingming; Zhang, Shaojun

    2015-02-23

    Terahertz-wave parametric oscillators (TPOs) have advantages of room temperature operation, wide tunable range, narrow line-width, good coherence. They have also disadvantage of small pulse energy. In this paper, several factors preventing TPOs from generating high-energy THz pulses and the corresponding solutions are analyzed. A scheme to generate high-energy THz pulses by using the combination of a TPO and a Stokes-pulse-injected terahertz-wave parametric generator (spi-TPG) is proposed and demonstrated. A TPO is used as a source to generate a seed pulse for the surface-emitted spi-TPG. The time delay between the pump and Stokes pulses is adjusted to guarantee they have good temporal overlap. The pump pulses have a large pulse energy and a large beam size. The Stokes beam is enlarged to make its size be larger than the pump beam size to have a large effective interaction volume. The experimental results show that the generated THz pulse energy from the spi-TPG is 1.8 times as large as that obtained from the TPO for the same pumping pulse energy density of 0.90 J/cm(2) and the same pumping beam size of 3.0 mm. When the pumping beam sizes are 5.0 and 7.0 mm, the enhancement times are 3.7 and 7.5, respectively. The spi-TPG here is similar to a difference frequency generator; it can also be used as a Stokes pulse amplifier.

  5. Design of extraction system on grid of plasma generator electrode for pulsed electron irradiator

    International Nuclear Information System (INIS)

    Agus Purwadi; Bambang Siswanto; Lely Susita RM; Suprapto; Anjar Anggraini H; Ihwanul Azis

    2016-01-01

    It has been carried out design and study of electron extraction particularly for obtaining the electron extraction current via grid on the Plasma Generator Chamber (PGC) caused by the existence of extraction voltage U_a. Electrons of plasma surface emitted to acceleration region through emission window and then extracted acceleration by extraction voltage U_a through foil window to atmospheric region for being applied to any target. Applied extraction voltage U_a on PEI device influences the forming and energy value of electron extraction current I_e then the PGC dimension influences the product of thermal electron emission current I_e_0. It has been determinated the PGC geometry and dimension of producing electron extraction current based on arc discharge plasma current to desire on any plasma density. From the calculation yield for the value of plasma density n_e = 78 x 10"1"0 cm"-"3 and the arc discharge current Id = 80 A (pulse width τ = 100µs) used the PGC size of (80 x 20 x 40) cm"3. Emission window area of (65 x 15) cm"2 located on the low part surface of PGC is covered by a grid sheet made of stainless steel of rectangular shape and the distance of one grid hole to another is 0,25 mm each others. Current value of I_e beside depends on plasma parameters also depends on the size of grid holes. The optimum of geometry and size is rectangular with its side size of p ≈ 0,50 mm with the plasma parameters optimum (density value n_e = 10"1"6 m"-"3 and electron temperature T_e = 6 eV). From the initial experiment yields obtained that the electron extraction efficiency value α = 37,25 % on extraction voltage V = 3 kV. (author)

  6. Progress Towards Identifying and Quantifying the Organic Ice Nucleating Particles in Soils and Aerosols

    Science.gov (United States)

    Hill, T. C. J.; DeMott, P. J.; Fröhlich-Nowoisky, J.; Tobo, Y.; Suski, K. J.; Levin, E. J.; Kreidenweis, S. M.; Franc, G. D.

    2014-12-01

    Soil and plant surfaces emit ice nucleating particles (INP) to the atmosphere, especially when disturbed by wind, harvesting, rain or fire. Organic (biogenic) INP are abundant in most soils and dominate the population that nucleate >-15°C. For example, the sandy topsoil of sagebrush shrubland, a widespread ecotype prone to wind erosion after fire, contains ~106 organic INP g-1 at -6°C. The relevance of organic INP may also extend to colder temperatures than previously thought: Particles of soil organic matter (SOM) have been shown to be more important than mineral particles for the ice nucleating ability of agricultural soil dusts to -34°C. While the abundance of ice nucleation active (INA) bacteria on plants has been established, the identity of the organic INP in and emitted by soils remains a 40-year-old mystery. The need to understand their production and release is highlighted by recent findings that INA bacteria (measured with qPCR) account for few, if any, of the warm-temperature organic INP that predominate in boundary layer aerosols and snow; organic INP lofted with soil dusts seem a likely source. The complexity of SOM hinders its investigation. It contains decomposing plant materials, a diverse microbial and microfaunal community, humus, and inert organic matter. All are biochemically complex and all may contain ice nucleating constituents, either by design or by chance. Indeed the smoothness of the INP temperature spectra of soils is indicative of numerous, overlapping distributions of INP. We report recent progress in identifying and quantifying the organic INP in soils and boundary layer aerosols representative of West Central U.S. ecosystems, and how their characteristics may affect their dispersal. Chemical, enzymatic and DNA-based tests were used to assess contributions of INP from plant tissues, INA bacteria, INA fungi, organic crystals, monolayers of aliphatic alcohols, carbohydrates, and humic substances, while heat- and peroxide-based tests

  7. Femtosecond time-resolved photodissociation dynamics of methyl halide molecules on ultrathin gold films

    Directory of Open Access Journals (Sweden)

    Mihai E. Vaida

    2011-09-01

    Full Text Available The photodissociation of small organic molecules, namely methyl iodide, methyl bromide, and methyl chloride, adsorbed on a metal surface was investigated in real time by means of femtosecond-laser pump–probe mass spectrometry. A weakly interacting gold surface was employed as substrate because the intact adsorption of the methyl halide molecules was desired prior to photoexcitation. The gold surface was prepared as an ultrathin film on Mo(100. The molecular adsorption behavior was characterized by coverage dependent temperature programmed desorption spectroscopy. Submonolayer preparations were irradiated with UV light of 266 nm wavelength and the subsequently emerging methyl fragments were probed by photoionization and mass spectrometric detection. A strong dependence of the excitation mechanism and the light-induced dynamics on the type of molecule was observed. Possible photoexcitation mechanisms included direct photoexcitation to the dissociative A-band of the methyl halide molecules as well as the attachment of surface-emitted electrons with transient negative ion formation and subsequent molecular fragmentation. Both reaction pathways were energetically possible in the case of methyl iodide, yet, no methyl fragments were observed. As a likely explanation, the rapid quenching of the excited states prior to fragmentation is proposed. This quenching mechanism could be prevented by modification of the gold surface through pre-adsorption of iodine atoms. In contrast, the A-band of methyl bromide was not energetically directly accessible through 266 nm excitation. Nevertheless, the one-photon-induced dissociation was observed in the case of methyl bromide. This was interpreted as being due to a considerable energetic down-shift of the electronic A-band states of methyl bromide by about 1.5 eV through interaction with the gold substrate. Finally, for methyl chloride no photofragmentation could be detected at all.

  8. Breakdown of predictability in gravitational collapse

    International Nuclear Information System (INIS)

    Hawking, S.W.

    1976-01-01

    In this paper it is claimed that the breakdown of classical concepts of space and time is not merely a result of our ignorance of the correct theory but that it represents a fundamental limitation to our ability to predict the future, a limitation that is analogous but additional to the limitation imposed by the normal quantum-mechanical uncertainty principle. The new limitation arises because general relativity allows the causal structure of space-time to be very different from that of Minkowski space. The interaction region can be bounded not only by an initial surface on which data are given and a final surface on which measurements are made but also a ''hidden surface'' about which the observer has only limited information such as the mass, angular momentum, and charge. Concerning this hidden surface one has a ''principle of ignorance'': The surface emits with equal probability all configurations of particles compatible with the observerslimited knowledge. It is shown that the ignorance principle holds for the quantum-mechanical evaporation of black holes: The black hole creates particles in pairs, with one particle always falling into the hole and the other possibly escaping to infinity. Because part of the information about the state of the system is lost down the hole, the final situation is represented by a density matrix rather than a pure quantum state. This means there is no S matrix for the process of black-hole formation and evaporation. Instead one has to introduce a new operator, called the superscattering operator, which maps density matrices describing the initial situation to density matrices describing the final situation

  9. Enhanced photochemistry on metal surfaces

    International Nuclear Information System (INIS)

    Goncher, G.M.; Parsons, C.A.; Harris, C.B.

    1984-01-01

    Due to the fast relaxation of molecular excited states in the vicinity of a metal or semiconductor surface, few observations of surface photochemistry have been reported. The following work concerns the surface-enhanced photo-reactions of a variety of physisorbed molecules on roughened Ag surfaces. In summary, photodecomposition leads to a graphitic surface carbon product which is monitored via surface-enhanced Raman scattering. In most cases an initial two-photon molecular absorption step followed by further absorption and fragmentation is thought to occur. Enhancement of the incident fields occurs through roughness-mediated surface plasmon resonances. This mechanism provides the amplified electromagnetic surface fields responsible for the observed photodecomposition. The photodecomposition experiments are performed under ultra-high vacuum. Surface characterization of the roughened surfaces was done by Scanning Electron Microscopy (SEM), and electron-stimulated emission. The SEM revealed morphology on the order of 300-400 A. This size of roughness feature, when modelled as isolated spheres should exhibit the well-known Mie resonances for light of the correct wavelengths. For protrusions existing on a surface these Mie resonances can be thought of as a coupling of the light with the surface plasmon. Experimental verification of these resonances was provided by the electron-stimulated light emission results. These showed that a polished Ag surface emitted only the expected transition radiation at the frequency of the Ag bulk plasmon. Upon roughening, however, a broad range of lower frequencies extending well into the visible are seen from electron irradiation of the surface. Large enhancements are expected for those frequencies which are able to couple into the surface modes

  10. Tight control of light trapping in surface addressable photonic crystal membranes: application to spectrally and spatially selective optical devices (Conference Presentation)

    Science.gov (United States)

    Letartre, Xavier; Blanchard, Cédric; Grillet, Christian; Jamois, Cécile; Leclercq, Jean-Louis; Viktorovitch, Pierre

    2016-04-01

    Surface addressable Photonic Crystal Membranes (PCM) are 1D or 2D photonic crystals formed in a slab waveguides where Bloch modes located above the light line are exploited. These modes are responsible for resonances in the reflection spectrum whose bandwidth can be adjusted at will. These resonances result from the coupling between a guided mode of the membrane and a free-space mode through the pattern of the photonic crystal. If broadband, these structures represent an ideal mirror to form compact vertical microcavity with 3D confinement of photons and polarization selectivity. Among numerous devices, low threshold VCSELs with remarkable and tunable modal properties have been demonstrated. Narrow band PCMs (or high Q resonators) have also been extensively used for surface addressable optoelectronic devices where an active material is embedded into the membrane, leading to the demonstration of low threshold surface emitting lasers, nonlinear bistables, optical traps... In this presentation, we will describe the main physical rules which govern the lifetime of photons in these resonant modes. More specifically, it will be emphasized that the Q factor of the PCM is determined, to the first order, by the integral overlap between the electromagnetic field distributions of the guided and free space modes and of the dielectric periodic perturbation which is applied to the homogeneous membrane to get the photonic crystal. It turns out that the symmetries of these distributions are of prime importance for the strength of the resonance. It will be shown that, by molding in-plane or vertical symmetries of Bloch modes, spectrally and spatially selective light absorbers or emitters can be designed. First proof of concept devices will be also presented.

  11. A full time-domain approach to spatio-temporal dynamics of semiconductor lasers. II. Spatio-temporal dynamics

    Science.gov (United States)

    Böhringer, Klaus; Hess, Ortwin

    The spatio-temporal dynamics of novel semiconductor lasers is discussed on the basis of a space- and momentum-dependent full time-domain approach. To this means the space-, time-, and momentum-dependent Full-Time Domain Maxwell Semiconductor Bloch equations, derived and discussed in our preceding paper I [K. Böhringer, O. Hess, A full time-domain approach to spatio-temporal dynamics of semiconductor lasers. I. Theoretical formulation], are solved by direct numerical integration. Focussing on the device physics of novel semiconductor lasers that profit, in particular, from recent advances in nanoscience and nanotechnology, we discuss the examples of photonic band edge surface emitting lasers (PBE-SEL) and semiconductor disc lasers (SDLs). It is demonstrated that photonic crystal effects can be obtained for finite crystal structures, and leading to a significant improvement in laser performance such as reduced lasing thresholds. In SDLs, a modern device concept designed to increase the power output of surface-emitters in combination with near-diffraction-limited beam quality, we explore the complex interplay between the intracavity optical fields and the quantum well gain material in SDL structures. Our simulations reveal the dynamical balance between carrier generation due to pumping into high energy states, momentum relaxation of carriers, and stimulated recombination from states near the band edge. Our full time-domain approach is shown to also be an excellent framework for the modelling of the interaction of high-intensity femtosecond and picosecond pulses with semiconductor nanostructures. It is demonstrated that group velocity dispersion, dynamical gain saturation and fast self-phase modulation (SPM) are the main causes for the induced changes and asymmetries in the amplified pulse shape and spectrum of an ultrashort high-intensity pulse. We attest that the time constants of the intraband scattering processes are critical to gain recovery. Moreover, we present

  12. Uncertainty in regional and zonal monthly mean downward surface irradiances from Edition 4.0 CERES Energy Balanced and Filled (EBAF) data product

    Science.gov (United States)

    Kato, S.; Rutan, D. A.; Rose, F. G.; Loeb, N. G.

    2017-12-01

    The surface of the Earth receives solar radiation (shortwave) and emission from the atmosphere (longwave). At a global and annual mean approximately 12% of solar radiation incident on the surface is reflected and the rest is absorbed by the surface. The surface emits radiation proportional to the forth power of the temperature. Although the uncertainty in global and annual mean surface irradiances is estimated in earlier studies (Zhang et al. 1995, 2004; L'Ecuyer et al. 2008; Stephens et al. 2012; Kato et al. 2012), only a few studies estimated the uncertainty in computed surface irradiances at smaller spatial and temporal scales (Zhang et al. 1995, 2004; Kato et al. 2012). We use surface observations at 46 buoys and 36 land sites and newly released the Edition 4.0 Clouds and the Earth's Radiant Energy System (CERES) Energy Balanced and Filled (EBAF)-surface data product to estimate the uncertainty in regional and zonal monthly mean downward shortwave and longwave surface irradiances. The root-mean-square difference of monthly mean computed and observed irradiances is used for the regional uncertainty. The uncertainty is separated into bias and spatially random components. The random component decreases when irradiances are averaged over a larger area, nearly inversely proportional to the number of surface observation sites. The presentation provides the uncertainty in the regional and zonal monthly mean downward surface irradiances over ocean and land. ReferencesKato, S. and N.G.Loeb, D. A.Rutan, F. G. Rose, S. Sun-Mack,W.F.Miller, and Y. Chen, 2012. Surv. Geophys., 33, 395-412, doi:10.1007/s10712-012-9179-x. L'Ecuyer, T. S., N. B. Wood, T. Haladay, G. L. Stephens, and P. W. Stackhouse Jr., 2008, J. Geophys. Res., 113, D00A15, doi:10.1029/2008JD009951. Stephens, G. L. and Coauthors, 2012, Nat. Geosci., 5, 691-696, doi:10.1038/ngeo1580. Zhang, Y., W. B. Rossow, A. A. Lacis, V. Oinas, and M. I. Mishchenko, 2004, J. Geophys. Res., 109, D19105, doi:10.1029/2003JD

  13. Denitrifiers in the surface zone are primarily responsible for the nitrous oxide emission of dairy manure compost

    Energy Technology Data Exchange (ETDEWEB)

    Maeda, Koki, E-mail: k_maeda@affrc.go.jp [Dairy Research Division, National Agricultural Research Center for Hokkaido Region, National Agricultural and Food Research Organization, 1 Hitsujigaoka, Sapporo 062-8555 (Japan); Department of Environmental Chemistry and Engineering, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8502 (Japan); Toyoda, Sakae [Department of Environmental Chemistry and Engineering, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8502 (Japan); Hanajima, Dai [Dairy Research Division, National Agricultural Research Center for Hokkaido Region, National Agricultural and Food Research Organization, 1 Hitsujigaoka, Sapporo 062-8555 (Japan); Yoshida, Naohiro [Department of Environmental Chemistry and Engineering, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8502 (Japan)

    2013-03-15

    Highlights: ► Nitrous oxide (N{sub 2}O) productions of each compost zones were compared. ► The pile surface emitted significant fluxes of N{sub 2}O. ► The isotopic signature of N{sub 2}O from surface and NO{sub 2}{sup −} amended core were different. ► The denitrifying gene abundance was significantly higher in pile surface than the pile core. -- Abstract: During the dairy manure composting process, significant nitrous oxide (N{sub 2}O) emissions occur just after the pile turnings. To understand the characteristics of this N{sub 2}O emission, samples were taken from the compost surface and core independently, and the N{sub 2}O production was monitored in laboratory incubation experiments. Equal amounts of surface and core samples were mixed to simulate the turning, and the {sup 15}N isotope ratios within the molecules of produced N{sub 2}O were analyzed by isotopomer analysis. The results showed that the surface samples emitted significant levels of N{sub 2}O, and these emissions were correlated with NO{sub x}{sup −}-N accumulation. Moreover, the surface samples and surface-core mixed samples incubated at 30 °C produced N{sub 2}O with a low site preference (SP) value (−0.9 to 7.0‰) that was close to bacteria denitrification (0‰), indicating that denitrifiers in the surface samples are responsible for this N{sub 2}O production. On the other hand, N{sub 2}O produced by NO{sub 2}{sup −}-amended core samples and surface samples incubated at 60 °C showed unrecognized isotopic signatures (SP = 11.4–20.3‰). From these results, it was revealed that the N{sub 2}O production occurring just after the turnings was mainly derived from bacterial denitrification (including nitrifier denitrification) of NO{sub x}{sup −}-N under mesophilic conditions, and surface denitrifying bacteria appeared to be the main contributor to this process.

  14. The CO_2 absorption spectrum in the 2.3 µm transparency window by high sensitivity CRDS: (I) Rovibrational lines

    International Nuclear Information System (INIS)

    Vasilchenko, S.; Konefal, M.; Mondelain, D.; Kassi, S.; Čermák, P.; Tashkun, S.A.; Perevalov, V.I.; Campargue, A.

    2016-01-01

    The absorption of carbon dioxide is very weak near 2.3 µm which makes this transparency window of particular interest for the study of Venus’ lower atmosphere. As a consequence of the weakness of the transitions located in this region, previous experimental data are very scarce and spectroscopic databases provide calculated line lists which should be tested and validated by experiment. In this work, we use the Cavity Ring Down Spectroscopy (CRDS) technique for a high sensitivity characterization of the CO_2 absorption spectrum in two spectral intervals of the 2.3 µm window: 4248–4257 and 4295–4380 cm"−"1 which were accessed using a Distributed Feed Back (DFB) diode laser and a Vertical External Cavity Surface Emitting Laser (VECSEL) as light sources, respectively. The achieved sensitivity (noise equivalent absorption, α_m_i_n, on the order of 5×10"−"1"0 cm"−"1) allowed detecting numerous new transitions with intensity values down to 5×10"−"3"0 cm/molecule. The rovibrational assignments were performed by comparison with available theoretical line lists in particular those obtained at IAO Tomsk using the global effective operator approach. Hot bands of the main isotopologue and "1"6O"1"2C"1"8O bands were found to be missing in the HITRAN database while they contribute importantly to the absorption in the region. Additional CRDS spectra of a CO_2 sample highly enriched in "1"8O were recorded in order to improve the spectroscopy of this isotopologue. As a result about 700 lines of "1"6O"1"2C"1"8O, "1"6O"1"2C"1"7O, "1"7O"1"2C"1"8O, "1"2C"1"8O_2 and "1"3C"1"8O_2 were newly measured. The status of the different databases (HITRAN, CDSD, variational calculations) in the important 2.3 µm transparency window is discussed. Possible improvements to correct evidenced deficiencies are suggested. - Highlights: • High sensitivity CRDS with a VECSEL in the 2.3 µm transparency window of CO_2. • Natural and "1"8O enriched CO_2 spectra recorded with

  15. Semiconductor Laser Diode Pumps for Inertial Fusion Energy Lasers

    International Nuclear Information System (INIS)

    Deri, R.J.

    2011-01-01

    Solid-state lasers have been demonstrated as attractive drivers for inertial confinement fusion on the National Ignition Facility (NIF) at Lawrence Livermore National Laboratory (LLNL) and at the Omega Facility at the Laboratory for Laser Energetics (LLE) in Rochester, NY. For power plant applications, these lasers must be pumped by semiconductor diode lasers to achieve the required laser system efficiency, repetition rate, and lifetime. Inertial fusion energy (IFE) power plants will require approximately 40-to-80 GW of peak pump power, and must operate efficiently and with high system availability for decades. These considerations lead to requirements on the efficiency, price, and production capacity of the semiconductor pump sources. This document provides a brief summary of these requirements, and how they can be met by a natural evolution of the current semiconductor laser industry. The detailed technical requirements described in this document flow down from a laser ampl9ifier design described elsewhere. In brief, laser amplifiers comprising multiple Nd:glass gain slabs are face-pumped by two planar diode arrays, each delivering 30 to 40 MW of peak power at 872 nm during a ∼ 200 (micro)s quasi-CW (QCW) pulse with a repetition rate in the range of 10 to 20 Hz. The baseline design of the diode array employs a 2D mosaic of submodules to facilitate manufacturing. As a baseline, they envision that each submodule is an array of vertically stacked, 1 cm wide, edge-emitting diode bars, an industry standard form factor. These stacks are mounted on a common backplane providing cooling and current drive. Stacks are conductively cooled to the backplane, to minimize both diode package cost and the number of fluid interconnects for improved reliability. While the baseline assessment in this document is based on edge-emitting devices, the amplifier design does not preclude future use of surface emitting diodes, which may offer appreciable future cost reductions and

  16. Regional uncertainty of GOSAT XCO2 retrievals in China: quantification and attribution

    Directory of Open Access Journals (Sweden)

    N. Bie

    2018-03-01

    Full Text Available The regional uncertainty of the column-averaged dry air mole fraction of CO2 (XCO2 retrieved using different algorithms from the Greenhouse gases Observing SATellite (GOSAT and its attribution are still not well understood. This paper investigates the regional performance of XCO2 within a latitude band of 37–42° N segmented into 8 cells in a grid of 5° from west to east (80–120° E in China, where typical land surface types and geographic conditions exist. The former includes desert, grassland and built-up areas mixed with cropland; and the latter includes anthropogenic emissions that change from small to large from west to east, including those from the megacity of Beijing. For these specific cells, we evaluate the regional uncertainty of GOSAT XCO2 retrievals by quantifying and attributing the consistency of XCO2 retrievals from four algorithms (ACOS, NIES, OCFP and SRFP by intercomparison. These retrievals are then specifically compared with simulated XCO2 from the high-resolution nested model in East Asia of the Goddard Earth Observing System 3-D chemical transport model (GEOS-Chem. We also introduce the anthropogenic CO2 emissions data generated from the investigation of surface emitting point sources that was conducted by the Ministry of Environmental Protection of China to GEOS-Chem simulations of XCO2 over the Chinese mainland. The results indicate that (1 regionally, the four algorithms demonstrate smaller absolute biases of 0.7–1.1 ppm in eastern cells, which are covered by built-up areas mixed with cropland with intensive anthropogenic emissions, than those in the western desert cells (1.0–1.6 ppm with a high-brightness surface from the pairwise comparison results of XCO2 retrievals. (2 Compared with XCO2 simulated by GEOS-Chem (GEOS-XCO2, the XCO2 values from ACOS and SRFP have better agreement, while values from OCFP are the least consistent with GEOS-XCO2. (3 Viewing attributions of XCO2 in the spatio

  17. Consolidated Ground Segment Requirements for a UHF Radar for the ESSAS

    Science.gov (United States)

    Muller, Florent; Vera, Juan

    2009-03-01

    . In order to be able to examine different kind of concepts, trade-offs must be possible. Degrees of freedom must be defined between accuracy and refreshment rate of the measurements, between survey zone and tracking zone (if different).Third part will deal with the requirements derived from various constraints. Logistical issues depend on the required availability of the system. People and environment security is also a big concern, related to maximal emitted power. There are current known technical limits (regarding current existing radars) that may need to be pushed: peak power, surface emitted power density, etc.Traceability of derived consolidated requirements is also a key driver of this part of the study. A methodology for traceability of requirements and tests will be defined. It shall be extendable to the next phases of the current study and further studies also. All the requirements will be written in accordance to this methodology.

  18. Infrared laser spectroscopic trace gas sensing

    Science.gov (United States)

    Sigrist, Markus

    2016-04-01

    Chemical sensing and analyses of gas samples by laser spectroscopic methods are attractive owing to several advantages such as high sensitivity and specificity, large dynamic range, multi-component capability, and lack of pretreatment or preconcentration procedures. The preferred wavelength range comprises the fundamental molecular absorption range in the mid-infared between 3 and 15 μm, whereas the near-infrared range covers the (10-100 times weaker) higher harmonics and combination bands. The availability of near-infrared and, particularly, of broadly tunable mid-infrared sources like external cavity quantum cascade lasers (EC-QCLs), interband cascade lasers (ICLs), difference frequency generation (DFG), optical parametric oscillators (OPOs), recent developments of diode-pumped lead salt semiconductor lasers, of supercontinuum sources or of frequency combs have eased the implementation of laser-based sensing devices. Sensitive techniques for molecular absorption measurements include multipass absorption, various configurations of cavity-enhanced techniques such as cavity ringdown (CRD), or of photoacoustic spectroscopy (PAS) including quartz-enhanced (QEPAS) or cantilever-enhanced (CEPAS) techniques. The application requirements finally determine the optimum selection of laser source and detection scheme. In this tutorial talk I shall discuss the basic principles, present various experimental setups and illustrate the performance of selected systems for chemical sensing of selected key atmospheric species. Applications include an early example of continuous vehicle emission measurements with a mobile CO2-laser PAS system [1]. The fast analysis of C1-C4 alkanes at sub-ppm concentrations in gas mixtures is of great interest for the petrochemical industry and was recently achieved with a new type of mid-infrared diode-pumped piezoelectrically tuned lead salt vertical external cavity surface emitting laser (VECSEL) [2]. Another example concerns measurements on short

  19. Regional uncertainty of GOSAT XCO2 retrievals in China: quantification and attribution

    Science.gov (United States)

    Bie, Nian; Lei, Liping; Zeng, ZhaoCheng; Cai, Bofeng; Yang, Shaoyuan; He, Zhonghua; Wu, Changjiang; Nassar, Ray

    2018-03-01

    The regional uncertainty of the column-averaged dry air mole fraction of CO2 (XCO2) retrieved using different algorithms from the Greenhouse gases Observing SATellite (GOSAT) and its attribution are still not well understood. This paper investigates the regional performance of XCO2 within a latitude band of 37-42° N segmented into 8 cells in a grid of 5° from west to east (80-120° E) in China, where typical land surface types and geographic conditions exist. The former includes desert, grassland and built-up areas mixed with cropland; and the latter includes anthropogenic emissions that change from small to large from west to east, including those from the megacity of Beijing. For these specific cells, we evaluate the regional uncertainty of GOSAT XCO2 retrievals by quantifying and attributing the consistency of XCO2 retrievals from four algorithms (ACOS, NIES, OCFP and SRFP) by intercomparison. These retrievals are then specifically compared with simulated XCO2 from the high-resolution nested model in East Asia of the Goddard Earth Observing System 3-D chemical transport model (GEOS-Chem). We also introduce the anthropogenic CO2 emissions data generated from the investigation of surface emitting point sources that was conducted by the Ministry of Environmental Protection of China to GEOS-Chem simulations of XCO2 over the Chinese mainland. The results indicate that (1) regionally, the four algorithms demonstrate smaller absolute biases of 0.7-1.1 ppm in eastern cells, which are covered by built-up areas mixed with cropland with intensive anthropogenic emissions, than those in the western desert cells (1.0-1.6 ppm) with a high-brightness surface from the pairwise comparison results of XCO2 retrievals. (2) Compared with XCO2 simulated by GEOS-Chem (GEOS-XCO2), the XCO2 values from ACOS and SRFP have better agreement, while values from OCFP are the least consistent with GEOS-XCO2. (3) Viewing attributions of XCO2 in the spatio-temporal pattern, ACOS and SRFP

  20. Fabrication of novel structures to enhance the performance of microwave, millimeter wave and optical radiators

    Science.gov (United States)

    Gbele, Kokou

    This dissertation has three parts which are distinctive from the perspective of their frequency regime of operation and from the nature of their contributions to the science and engineering communities. The first part describes work that was conducted on a vertical-external-cavity surface emitting-laser (VECSEL) in the optical frequency regime. We designed, fabricated, and tested a hybrid distributed Bragg reflector (DBR) mirror for a VECSEL sub-cavity operating at the laser emission wavelength of 1057 nm. The DBR mirror was terminated with a highly reflecting gold surface and integrated with an engineered pattern of titanium. This hybrid mirror achieved a reduction in half of the number of DBR layer pairs in comparison to a previously reported, successful VECSEL chip. Moreover, the output power of our VECSEL chip was measured to be beyond 4.0Wwith an optical-to-optical efficiency of 19.4%. Excellent power output stability was demonstrated; a steady 1.0 W output at 15.0 W pump power was measured for over an hour. The second part reports on an ultrafast in situ pump-probing of the nonequlibrium dynamics of the gain medium of a VECSEL under mode-locked conditions. We proposed and successfully tested a novel approach to measure the response of the inverted carriers in the active region of a VECSEL device while it was operating under passively mode-locked conditions. We employed the dual-frequency-comb spectroscopy (DFCS) technique using an asynchronous optical sampling (ASOPS) method based on modified time-domain spectroscopy (TDS) to measure the nonequilibrium dynamics of the gain medium of a phase-locked VECSEL that we designed and fabricated to operate at the 1030 nm emission wavelength. Our spectroscopic studies used a probe pulse of 100 fs and an in situ pump pulse of 13 ps. We probed the gain medium of the VECSEL and recorded a depletion time of 13 ps, a fast recovery period of 17 ps, and 110 ps for the slow recovery time. Our scans thus demonstrated a 140 ps

  1. MATLAB-based program for optimization of quantum cascade laser active region parameters and calculation of output characteristics in magnetic field

    Science.gov (United States)

    Smiljanić, J.; Žeželj, M.; Milanović, V.; Radovanović, J.; Stanković, I.

    2014-03-01

    A strong magnetic field applied along the growth direction of a quantum cascade laser (QCL) active region gives rise to a spectrum of discrete energy states, the Landau levels. By combining quantum engineering of a QCL with a static magnetic field, we can selectively inhibit/enhance non-radiative electron relaxation process between the relevant Landau levels of a triple quantum well and realize a tunable surface emitting device. An efficient numerical algorithm implementation is presented of optimization of GaAs/AlGaAs QCL region parameters and calculation of output properties in the magnetic field. Both theoretical analysis and MATLAB implementation are given for LO-phonon and interface roughness scattering mechanisms on the operation of QCL. At elevated temperatures, electrons in the relevant laser states absorb/emit more LO-phonons which results in reduction of the optical gain. The decrease in the optical gain is moderated by the occurrence of interface roughness scattering, which remains unchanged with increasing temperature. Using the calculated scattering rates as input data, rate equations can be solved and population inversion and the optical gain obtained. Incorporation of the interface roughness scattering mechanism into the model did not create new resonant peaks of the optical gain. However, it resulted in shifting the existing peaks positions and overall reduction of the optical gain. Catalogue identifier: AERL_v1_0 Program summary URL:http://cpc.cs.qub.ac.uk/summaries/AERL_v1_0.html Program obtainable from: CPC Program Library, Queen’s University, Belfast, N. Ireland Licensing provisions: Standard CPC licence, http://cpc.cs.qub.ac.uk/licence/licence.html No. of lines in distributed program, including test data, etc.: 37763 No. of bytes in distributed program, including test data, etc.: 2757956 Distribution format: tar.gz Programming language: MATLAB. Computer: Any capable of running MATLAB version R2010a or higher. Operating system: Any platform

  2. 3D Cloud Tomography, Followed by Mean Optical and Microphysical Properties, with Multi-Angle/Multi-Pixel Data

    Science.gov (United States)

    Davis, A. B.; von Allmen, P. A.; Marshak, A.; Bal, G.

    2010-12-01

    -type model is used where the cloud surface "emits" either reflected (sunny-side) or transmitted (shady-side) light at different levels. As it turns out, the reflected/transmitted light ratio yields an approximate cloud optical thickness. Another approach is to invoke tomography techniques to define the volume occupied by the cloud using, as it were, cloud masks for each direction of observation. In the shape and opacity refinement phase, initial guesses along with solar and viewing geometry information are used to predict radiance in each pixel using a fast diffusion model for the 3D RT in MISR's non-absorbing red channel (275 m resolution). Refinement is constrained and stopped when optimal resolution is reached. Finally, multi-pixel/mono-angle MODIS data for the same cloud (at comparable 250 m resolution) reveals the desired droplet size information, hence the volume-averaged LWC. This is an ambitious remote sensing science project drawing on cross-disciplinary expertise gained in medical imaging using both X-ray and near-IR sources and detectors. It is high risk but with potentially high returns not only for the cloud modeling community but also aerosol and surface characterization in the presence of broken 3D clouds.

  3. Time-resolved photoluminescence spectroscopy of semiconductors for optical applications beyond the visible spectral range

    Energy Technology Data Exchange (ETDEWEB)

    Chernikov, Alexey A.

    2011-07-01

    the impact of Coulomb-correlations on the carrier-phonon scattering. The experiments presented in chapter 5 deal with the characterization of recently synthesizedmaterial systems: ZnO/(ZnMg)O heterostructures, GaN quantum wires (QWires), as well as (GaAs)Bi quantum wells (QWs). TRPL spectroscopy is applied to gain insight as well as a better understanding of the respective carrier relaxation and recombination processes crucial for the device operation. The aim of the studies is the systematic investigation of carrier dynamics influenced by disorder. The measurements are supported by kinetic Monte- Carlo simulations, providing a quantitative analysis of carrier localization effects. In chapter 6, optimization and characterization studies of semiconductor lasers, based on the well-studied (GaIn)As material system designed for NIR applications, are performed. The device under investigation is the so-called vertical-external-cavity surface emitting laser (VECSEL). The experiments focus on the study of the thermal properties of a high-power VECSEL. The distribution and removal of the excess heat as well as the optimization of the laser for increased performance are addressed applying different heat-spreading and heat-transfer approaches. Based on these investigations, the possibility for power-scaling is evaluated and the underlying restrictions are analyzed. The latter investigations are performed applying spatially-resolved PL spectroscopy. An experimental setup is designed for monitoring the spatial distribution of heat in the semiconductor structure during laser operation.

  4. Preface

    Science.gov (United States)

    2003-10-01

    Light is absorbed by promoting electrons between quantum states. Our control of this key optoelectronic interaction has improved radically in recent years as we become smarter about finding ways to affect this fundamental process. For decades, researchers concentrated on improving optical properties through changing the properties of the electronic states, by choosing appropriate atoms, molecules or solids, and by growing crystals of a perfection not found in nature. Huge developments in material science saw the introduction of many optically special materials, such as compound semiconductors and their nanostructures. Recently we have found new ways to manipulate the light-matter interaction by modifying the photonic components, for instance by enhancing the optical field with feedback in cavities. This second `knob' on the light-matter interaction manipulates the optical density of states. Besides simply enhancing the interaction by locally amplifying the electromagnetic fields, the modified optical density of states produced by photonic structuring allows emission and absorption rates to be enhanced or suppressed, now known as the Purcell effect. Atom-filled optical cavities exhibit many of these interesting phenomena. But it was not until the advent of high-quality semiconductor epitaxy that transitions with sufficient oscillator strength and a narrow-enough linewidth could be produced to uncover a third approach to modifying the light-matter interaction. A simple offshoot of the technology development of vertical-cavity semiconductor lasers, the combination of high-reflectivity semiconductor mirrors and narrow strong absorption lines of semiconductor quantum wells, opens a new regime. This `strong-coupling' regime emerges when the time it takes a photon to be emitted and pass once around the cavity to be then reabsorbed (known as the inverse `Rabi' frequency) becomes less than the time for the photon to leak out of the cavity or for the electronic transition to