Nano-islands Based Charge Trapping Memory: A Scalability Study

KAUST Repository

Elatab, Nazek

2017-10-19

Zinc-oxide (ZnO) and zirconia (ZrO2) metal oxides have been studied extensively in the past few decades with several potential applications including memory devices. In this work, a scalability study, based on the ITRS roadmap, is conducted on memory devices with ZnO and ZrO2 nano-islands charge trapping layer. Both nano-islands are deposited using atomic layer deposition (ALD), however, the different sizes, distribution and properties of the materials result in different memory performance. The results show that at the 32-nm node charge trapping memory with 127 ZrO2 nano-islands can provide a 9.4 V memory window. However, with ZnO only 31 nano-islands can provide a window of 2.5 V. The results indicate that ZrO2 nano-islands are more promising than ZnO in scaled down devices due to their higher density, higher-k, and absence of quantum confinement effects.

Charged particle traps II applications

CERN Document Server

Werth, Günther; Major, Fouad G

2009-01-01

This, the second volume of Charged Particle Traps, is devoted to applications, complementing the first volume’s comprehensive treatment of the theory and practice of charged particle traps, their many variants and refinements. In recent years, applications of far reaching importance have emerged ranging from the ultra-precise mass determinations of elementary particles and their antiparticles and short-lived isotopes, to high-resolution Zeeman spectroscopy on multiply-charged ions, to microwave and optical spectroscopy, some involving "forbidden" transitions from metastable states of such high resolution that optical frequency standards are realized by locking lasers to them. Further the potential application of trapped ions to quantum computing is explored, based on the extraordinary quantum state coherence made possible by the particle isolation. Consideration is given to the Paul and Penning traps as potential quantum information processors.

High-k shallow traps observed by charge pumping with varying discharging times

International Nuclear Information System (INIS)

Ho, Szu-Han; Chen, Ching-En; Tseng, Tseung-Yuen; Chang, Ting-Chang; Lu, Ying-Hsin; Lo, Wen-Hung; Tsai, Jyun-Yu; Liu, Kuan-Ju; Wang, Bin-Wei; Cao, Xi-Xin; Chen, Hua-Mao; Cheng, Osbert; Huang, Cheng-Tung; Chen, Tsai-Fu

2013-01-01

In this paper, we investigate the influence of falling time and base level time on high-k bulk shallow traps measured by charge pumping technique in n-channel metal-oxide-semiconductor field-effect transistors with HfO 2 /metal gate stacks. N T -V high level characteristic curves with different duty ratios indicate that the electron detrapping time dominates the value of N T for extra contribution of I cp traps. N T is the number of traps, and I cp is charge pumping current. By fitting discharge formula at different temperatures, the results show that extra contribution of I cp traps at high voltage are in fact high-k bulk shallow traps. This is also verified through a comparison of different interlayer thicknesses and different Ti x N 1−x metal gate concentrations. Next, N T -V high level characteristic curves with different falling times (t falling time ) and base level times (t base level ) show that extra contribution of I cp traps decrease with an increase in t falling time . By fitting discharge formula for different t falling time , the results show that electrons trapped in high-k bulk shallow traps first discharge to the channel and then to source and drain during t falling time . This current cannot be measured by the charge pumping technique. Subsequent measurements of N T by charge pumping technique at t base level reveal a remainder of electrons trapped in high-k bulk shallow traps

Evidence of interfacial charge trapping mechanism in polyaniline/reduced graphene oxide nanocomposites

Energy Technology Data Exchange (ETDEWEB)

Islam, Rakibul; Brun, Jean-François; Roussel, Frederick, E-mail: frederick.roussel@univ-lille1.fr [University of Lille, Sciences & Technologies, Unité Matériaux et Transformations (UMET), UMR CNRS 8207, U.F.R. de Physique, P5, 59655 Villeneuve d' Ascq Cedex (France); COMUE Lille Nord de France, BP 50458-59658 Villeneuve d' Ascq Cedex (France); Papathanassiou, Anthony N. [Physics Department, Solid State Physics Section, University of Athens, Panepistimiopolis, GR15784 Zografos, Athens (Greece); Chan Yu King, Roch [Science Division, University of Science and Arts of Oklahoma, Chickasha, Oklahoma 73018 (United States)

2015-08-03

Relaxation mechanisms in polyaniline (PANI)/Reduced Graphene Oxide (RGO) nanocomposites are investigated using broad band dielectric spectroscopy. The multilayered nanostructural features of the composites and the intimate interactions between PANI and RGO are evidenced by field emission scanning electron microscopy, transmission electron microscopy, and Raman spectroscopy. Increasing the RGO fraction in the composites results in a relaxation process observed at a frequency of ca. 5 kHz. This mechanism is associated with an electrical charge trapping phenomenon occurring at the PANI/RGO interfaces. The dielectric relaxation processes are interpreted according to the Sillars approach and the results are consistent with the presence of conducting prolate spheroids (RGO) embedded into a polymeric matrix (PANI). Dielectric permittivity data are analyzed within the framework of the Kohlrausch-William-Watts model, evidencing a Debye-like relaxation process.

Direct exchange between silicon nanocrystals and tunnel oxide traps under illumination on single electron photodetector

Energy Technology Data Exchange (ETDEWEB)

Chatbouri, S., E-mail: Samir.chatbouri@yahoo.com; Troudi, M.; Sghaier, N.; Kalboussi, A. [Avenue de I’environnement, Université de Monastir, Laboratoire de Micro électronique et Instrumentation (LR13ES12), Faculté des Sciences de Monastir (Tunisia); Aimez, V. [Université de Sherbrooke, Laboratoire Nanotechnologies et Nanosystémes (UMI-LN2 3463), Université de Sherbrooke—CNRS—INSA de Lyon-ECL-UJF-CPE Lyon, Institut Interdisciplinaire d’Innovation Technologique (Canada); Drouin, D. [Avenue de I’environnement, Université de Monastir, Laboratoire de Micro électronique et Instrumentation (LR13ES12), Faculté des Sciences de Monastir (Tunisia); Souifi, A. [Institut des Nanotechnologies de Lyon—site INSA de Lyon, UMR CNRS 5270 (France)

2016-09-15

In this paper we present the trapping of photogenerated charge carriers for 300 s resulted by their direct exchange under illumination between a few silicon nanocrystals (ncs-Si) embedded in an oxide tunnel layer (SiO{sub x} = 1.5) and the tunnel oxide traps levels for a single electron photodetector (photo-SET or nanopixel). At first place, the presence of a photocurrent limited in the inversion zone under illumination in the I–V curves confirms the creation of a pair electron/hole (e–h) at high energy. This photogenerated charge carriers can be trapped in the oxide. Using the capacitance-voltage under illumination (the photo-CV measurements) we show a hysteresis chargement limited in the inversion area, indicating that the photo-generated charge carriers are stored at traps levels at the interface and within ncs-Si. The direct exchange of the photogenerated charge carriers between the interface traps levels and the ncs-Si contributed on the photomemory effect for 300 s for our nanopixel at room temperature.

Stressing effects on the charge trapping of silicon oxynitride prepared by thermal oxidation of LPCVD Si-rich silicon nitride

International Nuclear Information System (INIS)

Choi, H.Y.; Wong, H.; Filip, V.; Sen, B.; Kok, C.W.; Chan, M.; Poon, M.C.

2006-01-01

It was recently found that the silicon oxynitride prepared by oxidation of silicon-rich silicon nitride (SRN) has several important features. The high nitrogen and extremely low hydrogen content of this material allows it to have a high dielectric constant and a low trap density. The present work investigates in further detail the electrical reliability of this kind of gate dielectric films by studying the charge trapping and interface state generation induced by constant current stressing. Capacitance-voltage (C-V) measurements indicate that for oxidation temperatures of 850 and 950 deg. C, the interface trap generation is minimal because of the high nitrogen content at the interface. At a higher oxidation temperature of 1050 deg. C, a large flatband shift is found for constant current stressing. This observation can be explained by the significant reduction of the nitrogen content and the phase separation effect at this temperature as found by X-ray photoelectron spectroscopy study. In addition to the high nitrogen content, the Si atoms at the interface exist in the form of random bonding to oxygen and nitrogen atoms for samples oxidized at 850 and 950 deg. C. This structure reduces the interface bonding constraint and results in the low interface trap density. For heavily oxidized samples the trace amount of interface nitrogen atoms exist in the form of a highly constraint SiN 4 phase and the interface oxynitride layer is a random mixture of SiO 4 and SiN 4 phases, which consequently reduces the reliability against high energy electron stressing

Atomic layer-deposited Al–HfO{sub 2}/SiO{sub 2} bi-layers towards 3D charge trapping non-volatile memory

Energy Technology Data Exchange (ETDEWEB)

Congedo, Gabriele, E-mail: gabriele.congedo@mdm.imm.cnr.it; Wiemer, Claudia; Lamperti, Alessio; Cianci, Elena; Molle, Alessandro; Volpe, Flavio G.; Spiga, Sabina, E-mail: sabina.spiga@mdm.imm.cnr

2013-04-30

A metal/oxide/high-κ dielectric/oxide/silicon (MOHOS) planar charge trapping memory capacitor including SiO{sub 2} as tunnel oxide, Al–HfO{sub 2} as charge trapping layer, SiO{sub 2} as blocking oxide and TaN metal gate was fabricated and characterized as test vehicle in the view of integration into 3D cells. The thin charge trapping layer and blocking oxide were grown by atomic layer deposition, the technique of choice for the implementation of these stacks into 3D structures. The oxide stack shows a good thermal stability for annealing temperature of 900 °C in N{sub 2}, as required for standard complementary metal–oxide–semiconductor processes. MOHOS capacitors can be efficiently programmed and erased under the applied voltages of ± 20 V to ± 12 V. When compared to a benchmark structure including thin Si{sub 3}N{sub 4} as charge trapping layer, the MOHOS cell shows comparable program characteristics, with the further advantage of the equivalent oxide thickness scalability due to the high dielectric constant (κ) value of 32, and an excellent retention even for strong testing conditions. Our results proved that high-κ based oxide structures grown by atomic layer deposition can be of interest for the integration into three dimensionally stacked charge trapping devices. - Highlights: ► Charge trapping device with Al–HfO{sub 2} storage layer is fabricated and characterized. ► Al–HfO{sub 2} and SiO{sub 2} blocking oxides are deposited by atomic layer deposition. ► The oxide stack shows a good thermal stability after annealing at 900 °C. ► The device can be efficiently programmed/erased and retention is excellent. ► The oxide stack could be used for 3D-stacked Flash non-volatile memories.

Simulation of trapping properties of high κ material as the charge storage layer for flash memory application

International Nuclear Information System (INIS)

Yeo, Yee Ngee; Wang Yingqian; Samanta, Santanu Kumar; Yoo, Won Jong; Samudra, Ganesh; Gao, Dongyue; Chong, Chee Ching

2006-01-01

We investigated the trapping properties of high κ material as the charge storage layer in non-volatile flash memory devices using a two-dimensional device simulator, Medici. The high κ material is sandwiched between two silicon oxide layers, resulting in the Silicon-Oxide-High κ-Oxide-Silicon (SOHOS) structure. The trap energy levels of the bulk electron traps in high κ material were determined. The programming and erasing voltage and time using Fowler Nordheim tunneling were estimated by simulation. The effect of deep level traps on erasing was investigated. Also, the effect of bulk traps density, thickness of block oxide and thickness of high κ material on the threshold voltage of the device was simulated

High-k shallow traps observed by charge pumping with varying discharging times

Energy Technology Data Exchange (ETDEWEB)

Ho, Szu-Han; Chen, Ching-En; Tseng, Tseung-Yuen [Department of Electronics Engineering, National Chiao Tung University, Hsinchu 300, Taiwan (China); Chang, Ting-Chang, E-mail: tcchang@mail.phys.nsysu.edu.tw [Department of Physics, National Sun Yat-Sen University, Kaohsiung 804, Taiwan (China); Advanced Optoelectronics Technology Center, National Cheng Kung University, Tainan, Taiwan (China); Lu, Ying-Hsin; Lo, Wen-Hung; Tsai, Jyun-Yu; Liu, Kuan-Ju [Department of Physics, National Sun Yat-Sen University, Kaohsiung 804, Taiwan (China); Wang, Bin-Wei; Cao, Xi-Xin [Department of Embedded System Engineering, Peking University, Beijing, P.R.China (China); Chen, Hua-Mao [Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, Hsinchu, Taiwan (China); Cheng, Osbert; Huang, Cheng-Tung; Chen, Tsai-Fu [Device Department, United Microelectronics Corporation, Tainan Science Park, Taiwan (China)

2013-11-07

In this paper, we investigate the influence of falling time and base level time on high-k bulk shallow traps measured by charge pumping technique in n-channel metal-oxide-semiconductor field-effect transistors with HfO{sub 2}/metal gate stacks. N{sub T}-V{sub high} {sub level} characteristic curves with different duty ratios indicate that the electron detrapping time dominates the value of N{sub T} for extra contribution of I{sub cp} traps. N{sub T} is the number of traps, and I{sub cp} is charge pumping current. By fitting discharge formula at different temperatures, the results show that extra contribution of I{sub cp} traps at high voltage are in fact high-k bulk shallow traps. This is also verified through a comparison of different interlayer thicknesses and different Ti{sub x}N{sub 1−x} metal gate concentrations. Next, N{sub T}-V{sub high} {sub level} characteristic curves with different falling times (t{sub falling} {sub time}) and base level times (t{sub base} {sub level}) show that extra contribution of I{sub cp} traps decrease with an increase in t{sub falling} {sub time}. By fitting discharge formula for different t{sub falling} {sub time}, the results show that electrons trapped in high-k bulk shallow traps first discharge to the channel and then to source and drain during t{sub falling} {sub time}. This current cannot be measured by the charge pumping technique. Subsequent measurements of N{sub T} by charge pumping technique at t{sub base} {sub level} reveal a remainder of electrons trapped in high-k bulk shallow traps.

Trap-controlled charge transport in corona-charged Teflon

International Nuclear Information System (INIS)

Gross, B.; Giacometti, J.A.; Ferreira, G.F.L.; Moreno A, R.A.

1980-01-01

The stability of negatively charged Teflon electrets is discussed. It is stated that it can only be explained by the assumption that the transport of excess charge is trap - controlled rather than mobility - controlled. (I.C.R.) [pt

The effect of interface trapped charges in DMG-S-SOI MOSFET: a perspective study

International Nuclear Information System (INIS)

Mohapatra, S K; Pradhan, K P; Sahu, P K; Pati, G S; Kumar, M R

2014-01-01

In this paper, the existing two-dimensional (2D) threshold voltage model for a dual material gate fully depleted strained silicon on insulator (DMG-FD-S-SOI) metal-oxide-semiconductor field effect transistor (MOSFET) is modified by considering the interface trapped charge effects. The interface trapped charge is a common phenomenon, and this charge cannot be neglected in nanoscale devices. For finding out the surface potential, parabolic approximation has been utilized and the virtual cathode potential method is used to formulate the threshold voltage. The developed threshold voltage model incorporates both positive as well as negative interface charges. Finally, validity of the presented model is verified with 2D device simulator Sentaurus™. (paper)

The effect of interface trapped charges in DMG-S-SOI MOSFET: a perspective study

Science.gov (United States)

Mohapatra, S. K.; Pradhan, K. P.; Sahu, P. K.; Pati, G. S.; Kumar, M. R.

2014-12-01

In this paper, the existing two-dimensional (2D) threshold voltage model for a dual material gate fully depleted strained silicon on insulator (DMG-FD-S-SOI) metal-oxide-semiconductor field effect transistor (MOSFET) is modified by considering the interface trapped charge effects. The interface trapped charge is a common phenomenon, and this charge cannot be neglected in nanoscale devices. For finding out the surface potential, parabolic approximation has been utilized and the virtual cathode potential method is used to formulate the threshold voltage. The developed threshold voltage model incorporates both positive as well as negative interface charges. Finally, validity of the presented model is verified with 2D device simulator Sentaurus™.

Highly charged ion trapping and cooling

International Nuclear Information System (INIS)

Beck, B. R.; Church, D. A.; Gruber, L.; Holder, J. P.; Schneider, D.; Steiger, J.

1998-01-01

In the past few years a cryogenic Penning trap (RETRAP) has been operational at the Electron Beam Ion Trap (EBIT) facility at Lawrence Livermore National Laboratory. The combination of RETRAP and EBIT provides a unique possibility of producing and re-trapping highly charged ions and cooling them to very low temperatures. Due to the high Coulomb potentials in such an ensemble of cold highly charged ions the Coulomb coupling parameter (the ratio of Coulomb potential to the thermal energy) can easily reach values of 172 and more. To study such systems is not only of interest in astrophysics to simulate White Dwarf star interiors but opens up new possibilities in a variety of areas (e.g. laser spectroscopy), cold highly charged ion beams

Nanographene charge trapping memory with a large memory window

International Nuclear Information System (INIS)

Meng, Jianling; Yang, Rong; Zhao, Jing; He, Congli; Wang, Guole; Shi, Dongxia; Zhang, Guangyu

2015-01-01

Nanographene is a promising alternative to metal nanoparticles or semiconductor nanocrystals for charge trapping memory. In general, a high density of nanographene is required in order to achieve high charge trapping capacity. Here, we demonstrate a strategy of fabrication for a high density of nanographene for charge trapping memory with a large memory window. The fabrication includes two steps: (1) direct growth of continuous nanographene film; and (2) isolation of the as-grown film into high-density nanographene by plasma etching. Compared with directly grown isolated nanographene islands, abundant defects and edges are formed in nanographene under argon or oxygen plasma etching, i.e. more isolated nanographene islands are obtained, which provides more charge trapping sites. As-fabricated nanographene charge trapping memory shows outstanding memory properties with a memory window as wide as ∼9 V at a relative low sweep voltage of ±8 V, program/erase speed of ∼1 ms and robust endurance of >1000 cycles. The high-density nanographene charge trapping memory provides an outstanding alternative for downscaling technology beyond the current flash memory. (paper)

MOHOS-type memory performance using HfO2 nanoparticles as charge trapping layer and low temperature annealing

International Nuclear Information System (INIS)

Molina, Joel; Ortega, Rafael; Calleja, Wilfrido; Rosales, Pedro; Zuniga, Carlos; Torres, Alfonso

2012-01-01

Highlights: ► HfO 2 nanoparticles used as charge trapping layer in MOHOS memory devices. ► Increasing HfO 2 nanoparticles concentration enhances charge injection and trapping. ► Enhancement of memory performance with low temperature annealing. ► Charge injection is done without using any hot-carrier injection mechanism. ► Using injected charge density is better for comparison of scaled memory devices. - Abstract: In this work, HfO 2 nanoparticles (np-HfO 2 ) are embedded within a spin-on glass (SOG)-based oxide matrix and used as a charge trapping layer in metal–oxide–high-k–oxide–silicon (MOHOS)-type memory applications. This charge trapping layer is obtained by a simple sol–gel spin coating method after using different concentrations of np-HfO 2 and low temperature annealing (down to 425 °C) in order to obtain charge–retention characteristics with a lower thermal budget. The memory's charge trapping characteristics are quantized by measuring both the flat-band voltage shift of MOHOS capacitors (writing/erasing operations) and their programming retention times after charge injection while correlating all these data to np-HfO 2 concentration and annealing temperature. Since a large memory window has been obtained for our MOHOS memory, the relatively easy injection/annihilation (writing/erasing) of charge injected through the substrate opens the possibility to use this material as an effective charge trapping layer. It is shown that by using lower annealing temperatures for the charge trapping layer, higher densities of injected charge are obtained along with enhanced retention times. In conclusion, by using np-HfO 2 as charge trapping layer in memory devices, moderate programming and retention characteristics have been obtained by this simple and yet low-cost spin-coating method.

Enhanced memory effect with embedded graphene nanoplatelets in ZnO charge trapping layer

International Nuclear Information System (INIS)

El-Atab, Nazek; Nayfeh, Ammar; Cimen, Furkan; Alkis, Sabri; Okyay, Ali K.

2014-01-01

A charge trapping memory with graphene nanoplatelets embedded in atomic layer deposited ZnO (GNIZ) is demonstrated. The memory shows a large threshold voltage V t shift (4 V) at low operating voltage (6/−6 V), good retention (>10 yr), and good endurance characteristic (>10 4 cycles). This memory performance is compared to control devices with graphene nanoplatelets (or ZnO) and a thicker tunnel oxide. These structures showed a reduced V t shift and retention characteristic. The GNIZ structure allows for scaling down the tunnel oxide thickness along with improving the memory window and retention of data. The larger V t shift indicates that the ZnO adds available trap states and enhances the emission and retention of charges. The charge emission mechanism in the memory structures with graphene nanoplatelets at an electric field E ≥ 5.57 MV/cm is found to be based on Fowler-Nordheim tunneling. The fabrication of this memory device is compatible with current semiconductor processing, therefore, has great potential in low-cost nano-memory applications.

Spectroscopy with trapped highly charged ions

International Nuclear Information System (INIS)

Beiersdorfer, Peter

2009-01-01

We give an overview of atomic spectroscopy performed on electron beam ion traps at various locations throughout the world. Spectroscopy at these facilities contributes to various areas of science and engineering, including but not limited to basic atomic physics, astrophysics, extreme ultraviolet lithography, and the development of density and temperature diagnostics of fusion plasmas. These contributions are accomplished by generating, for example, spectral surveys, making precise radiative lifetime measurements, accounting for radiative power emitted in a given wavelength band, illucidating isotopic effects, and testing collisional-radiative models. While spectroscopy with electron beam ion traps had originally focused on the x-ray emission from highly charged ions interacting with the electron beam, the operating modes of such devices have expanded to study radiation in almost all wavelength bands from the visible to the hard x-ray region; and at several facilities the ions can be studied even in the absence of an electron beam. Photon emission after charge exchange or laser excitation has been observed; and the work is no longer restricted to highly charged ions. Much of the experimental capabilities are unique to electron beam ion traps, and the work performed with these devices cannot be undertaken elsewhere. However, in other areas the work on electron beam ion traps rivals the spectroscopy performed with conventional ion traps or heavy-ion storage rings. The examples we present highlight many of the capabilities of the existing electron beam ion traps and their contributions to physics.

Determining oxide trapped charges in Al2O3 insulating films on recessed AlGaN/GaN heterostructures by gate capacitance transients measurements

Science.gov (United States)

Fiorenza, Patrick; Greco, Giuseppe; Schilirò, Emanuela; Iucolano, Ferdinando; Lo Nigro, Raffaella; Roccaforte, Fabrizio

2018-05-01

This letter presents time-dependent gate-capacitance transient measurements (C–t) to determine the oxide trapped charges (N ot) in Al2O3 films deposited on recessed AlGaN/GaN heterostructures. The C–t transients acquired at different temperatures under strong accumulation allowed to accurately monitor the gradual electron trapping, while hindering the re-emission by fast traps that may affect conventional C–V hysteresis measurements. Using this method, an increase of N ot from 2 to 6 × 1012 cm‑2 was estimated between 25 and 150 °C. The electron trapping is ruled by an Arrhenius dependence with an activation energy of 0.12 eV which was associated to points defects present in the Al2O3 films.

Interface and oxide traps in high-κ hafnium oxide films

International Nuclear Information System (INIS)

Wong, H.; Zhan, N.; Ng, K.L.; Poon, M.C.; Kok, C.W.

2004-01-01

The origins of the interface trap generation and the effects of thermal annealing on the interface and bulk trap distributions are studied in detail. We found that oxidation of the HfO 2 /Si interface, removal of deep trap centers, and crystallization of the as-deposited film will take place during the post-deposition annealing (PDA). These processes will result in the removal of interface traps and deep oxide traps and introduce a large amount of shallow oxide traps at the grain boundaries of the polycrystalline film. Thus, trade-off has to be made in considering the interface trap density and oxide trap density when conducting PDA. In addition, the high interface trap and oxide trap densities of the HfO 2 films suggest that we may have to use the SiO 2 /HfO 2 stack or hafnium silicate structure for better device performance

Effect of oxide charge trapping on x-ray photoelectron spectroscopy of HfO2/SiO2/Si structures

International Nuclear Information System (INIS)

Abe, Yasuhiro; Miyata, Noriyuki; Suzuki, Haruhiko; Kitamura, Koji; Igarashi, Satoru; Nohira, Hiroshi; Ikenaga, Eiji

2009-01-01

We examined the effects of interfacial SiO 2 layers and a surface metal layer on the photoelectron spectra of HfO 2 /SiO 2 /Si structures by hard X-ray photoemission spectroscopy with synchrotron radiation as well as conventional X-ray photoelectron spectroscopy (XPS). The Hf 4f and Hf 3d photoelectron peaks broadened and shifted toward a higher binding energy with increasing thickness of the interfacial SiO 2 layer, even though photoelectrons may have been emitted from the HfO 2 layer with the same chemical composition. Thinning the interfacial Si oxide layer to approximately one monolayer and depositing a metal layer on the HfO 2 surface suppressed these phenomena. The O 1s photoelectron spectra revealed marked differences between the metal- and nonmetal-deposited HfO 2 /SiO 2 /Si structures; HfO 2 and SiO 2 components in the O 1s photoelectron spectra for the metal-deposited structures were observed at reasonably separated binding energies, but those for the nonmetal-deposited structures were not separated clearly. From this behavior concerning the effects of interfacial SiO 2 and surface metal layers, we concluded that the Hf 4f, Hf 3d, and O 1s spectra measured from the HfO 2 /SiO 2 /Si structures did not reflect actual chemical bonding states. We consider that potential variations in the HfO 2 film owing to charge trapping strongly affect the measured photoelectron spectra. On the basis of angle-resolved XPS measurements, we propose that positive charges are trapped at the HfO 2 surface and negative charges are trapped inside the HfO 2 layer. (author)

Space-charge effects in Penning ion traps

Science.gov (United States)

Porobić, T.; Beck, M.; Breitenfeldt, M.; Couratin, C.; Finlay, P.; Knecht, A.; Fabian, X.; Friedag, P.; Fléchard, X.; Liénard, E.; Ban, G.; Zákoucký, D.; Soti, G.; Van Gorp, S.; Weinheimer, Ch.; Wursten, E.; Severijns, N.

2015-06-01

The influence of space-charge on ion cyclotron resonances and magnetron eigenfrequency in a gas-filled Penning ion trap has been investigated. Off-line measurements with K39+ using the cooling trap of the WITCH retardation spectrometer-based setup at ISOLDE/CERN were performed. Experimental ion cyclotron resonances were compared with ab initio Coulomb simulations and found to be in agreement. As an important systematic effect of the WITCH experiment, the magnetron eigenfrequency of the ion cloud was studied under increasing space-charge conditions. Finally, the helium buffer gas pressure in the Penning trap was determined by comparing experimental cooling rates with simulations.

Performance improvement of charge trap flash memory by using a composition-modulated high-k trapping layer

International Nuclear Information System (INIS)

Tang Zhen-Jie; Li Rong; Yin Jiang

2013-01-01

A composition-modulated (HfO 2 ) x (Al 2 O3) 1−x charge trapping layer is proposed for charge trap flash memory by controlling the Al atom content to form a peak and valley shaped band gap. It is found that the memory device using the composition-modulated (HfO 2 ) x (Al 2 O 3 ) 1−x as the charge trapping layer exhibits a larger memory window of 11.5 V, improves data retention even at high temperature, and enhances the program/erase speed. Improvements of the memory characteristics are attributed to the special band-gap structure resulting from the composition-modulated trapping layer. Therefore, the composition-modulated charge trapping layer may be useful in future nonvolatile flash memory device application. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

Retrospective accident dosimetry using trapped charges

Energy Technology Data Exchange (ETDEWEB)

Lee, J. I.; Kim, J. L.; Chang, I.; Kim, B. H. [Korea Atomic Energy Research Institute, Daejeon (Korea, Republic of)

2015-10-15

Dicentric chromosome aberrations technique scoring of aberrations in metaphases prepared from human lymphocytes is most commonly used. This is considered as a reliable technique because the sample is extracted from the individual human body itself. There are other techniques in biological dosimetry such as Fluorescence In Situ Hybridization (FISH) using translocations, premature chromosome condensation (PCC) and micronucleus assay. However the minimum detectable doses (MDD) are relatively high and sample preparation time is also relatively longer. Therefore, there is limitation in use of these techniques for the purpose of triage in a short time in case of emergency situation relating large number of persons. Electronic paramagnetic resonance (EPR) technique is based on the signal from unpaired electrons such as free radicals in irradiated materials especially tooth enamel, however it has also limitation for the purpose of triage because of difficulty of sample taking and its high MDD. Recently as physical methods, thermoluminescence (TL) and optically stimulated luminescence (OSL) technique have been attracted due to its lower MDD and simplicity of sample preparation. Density of the trapped charges is generally proportional to the radiation dose absorbed and the intensity of emitting light is also proportional to the density of trapped charges, thus it can be applied to measure radiation dose retrospectively. In this presentation, TL and OSL techniques are going to introduced and discussed as physical methods for retrospective accident dosimetry using trapped charges especially in electronic component materials. As a tool for dose reconstruction for emergency situation, thermoluminescece and optically stimulated luminescence techniques which are based on trapped charges during exposure of material are introduced. These techniques have several advantages such as high sensitivity, fast evaluation and ease to sample collection over common biological dosimetry and EPR

The origin of traps and the effect of nitrogen plasma in oxide-nitride-oxide structures for non-volatile memories

International Nuclear Information System (INIS)

Kim, W. S.; Kwak, D. W.; Oh, J. S.; Lee, D. W.; Cho, H. Y.

2010-01-01

Ultrathin oxide-nitride-oxide (ONO) dielectric stacked layers are fundamental structures of silicon-oxide-nitride-oxide-silicon (SONOS) non-volatile memory devices in which information is known to be stored as charges trapped in silicon nitride. Deep-level transient spectroscopy (DLTS) and a capacitance-voltage (CV) analysis were introduced to observe the trap behavior related to the memory effect in memory devices. The DLTS results verified that the nitride-related traps were a dominant factor in the memory effect. The energy of hole traps was 0.307 eV above the balance band. To improve the memory effects of the non-volatile memory devices with ONO structures, we introduced a nitrogen plasma treatment. After the N-plasma treatment, the flat-band voltage shift (ΔV FB ) was increased by about 1.5 times. The program and the erase (P-E) characteristics were also shown to be better than those for the as-ONO structure. In addition, the retention characteristics were improved by over 2.4 times.

Internal photoemission study on charge trapping behavior in rapid thermal oxides on strained-Si/SiGe heterolayers

International Nuclear Information System (INIS)

Bera, M.K.; Mahata, C.; Bhattacharya, S.; Chakraborty, A.K.; Armstrong, B.M.; Gamble, H.S.; Maiti, C.K.

2008-01-01

A comparative study on the nature of defects and their relationship to charge trapping with enhanced photosensitivity has been investigated through magnetic resonance and internal photoemission (IPE) experiments for rapid thermal grown oxides (RTO) on strained-Si/Si 0.8 Ge 0.2 and on co-processed bulk-Si (1 0 0) substrates. Both the band and defect-related electronic states were characterized through EPR, IPE, C-V and I-V measurements under UV-illumination. Surface chemical characterization of as-grown ultrathin oxides (5-7 nm) has been performed using high-resolution XPS. Enhancement in Ge-segregation with increasing oxidation temperature is reported. Comparative studies on interface properties and leakage current behavior of rapid thermal oxides have also been studied through fabricating metal-oxide-semiconductor capacitor structures. A degraded electrical property with increasing oxidation temperature is reported. Constant voltage stressing (CVS) in the range of 5.5-7 V was used to study the breakdown characteristics of different samples. We observe a distinguishably different time-to-breakdown (t bd ) phenomenon for bulk-Si and strained-Si/SiGe samples. Whereas the oxide on bulk-Si shows a typical breakdown behavior, the RTO grown oxide on strained-Si/SiGe samples showed a quasi-or soft-breakdown with lower t bd value. It may be pointed out that quasi-breakdown may be a stronger reliability limiting factor for strained-Si/SiGe devices in the oxide thickness range studied

6th International Conference on Trapped Charged Particles and Fundamental Physics

CERN Document Server

Schury, Peter; Ichikawa, Yuichi

2017-01-01

This volume presents the proceedings of the International Conference on Trapped Charged Particles and Fundamental Physics (TCP 14). It presents recent developments in the theoretical and experimental research on trapped charged particles and related fundamental physics and applications. The content has been divided topic-wise covering basic questions of Fundamental Physics, Quantum and QED Effects, Plasmas and Collective Behavior and Anti-Hydrogen. More technical issues include Storage Ring Physics, Precision Spectroscopy and Frequency Standards, Highly Charged Ions in Traps, Traps for Radioactive Isotopes and New Techniques and Facilities. An applied aspect of ion trapping is discussed in section devoted to Applications of Particle Trapping including Quantum Information and Processing. Each topic has a more general introduction, but also more detailed contributions are included. A selection of contributions exemplifies the interdisciplinary nature of the research on trapped charged particles worldwide. Repri...

Location of trapped charge in aluminum-implanted SiO2

International Nuclear Information System (INIS)

DiMaria, D.J.; Young, D.R.; Hunter, W.R.; Serrano, C.M.

1978-01-01

The position of the centroid of electrons trapped on sites resulting from aluminum implantation into SiO 2 is measured by using the photo I-V technique for energies from 15 to 40 keV, oxide thicknesses from 49 to 140 nm, and post-implant annealing temperature from 600 to 1050 0 C in N 2 for 30 min. The centroid of the trapped electrons is found to be identical to that of the implanted aluminum from SIMS measurements, regardless of annealing temperature from 600 to 1050 0 C, and located closer (by less than 9 nm) to the Al--SiO 2 interface than predicted from the Lindhard-Scharff-Schott (LSS) calculations of Gibbons, Johnson, and Mylroie. Comparison of centroids determined from photo I-V and SIMS measurements as a function of SiO 2 thickness also implies that the distributions of the ions and negative trapped charge are the same. The trapping behavior of these sites is discussed in the accompanying paper by Young et al

Characterization of nitride hole lateral transport in a charge trap flash memory by using a random telegraph signal method

Science.gov (United States)

Liu, Yu-Heng; Jiang, Cheng-Min; Lin, Hsiao-Yi; Wang, Tahui; Tsai, Wen-Jer; Lu, Tao-Cheng; Chen, Kuang-Chao; Lu, Chih-Yuan

2017-07-01

We use a random telegraph signal method to investigate nitride trapped hole lateral transport in a charge trap flash memory. The concept of this method is to utilize an interface oxide trap and its associated random telegraph signal as an internal probe to detect a local channel potential change resulting from nitride charge lateral movement. We apply different voltages to the drain of a memory cell and vary a bake temperature in retention to study the electric field and temperature dependence of hole lateral movement in a nitride. Thermal energy absorption by trapped holes in lateral transport is characterized. Mechanisms of hole lateral transport in retention are investigated. From the measured and modeled results, we find that thermally assisted trap-to-band tunneling is a major trapped hole emission mechanism in nitride hole lateral transport.

Multi-frequency inversion-charge pumping for charge separation and mobility analysis in high-k/InGaAs metal-oxide-semiconductor field-effect transistors

Energy Technology Data Exchange (ETDEWEB)

Djara, V.; Cherkaoui, K.; Negara, M. A.; Hurley, P. K., E-mail: paul.hurley@tyndall.ie [Tyndall National Institute, University College Cork, Dyke Parade, Cork (Ireland)

2015-11-28

An alternative multi-frequency inversion-charge pumping (MFICP) technique was developed to directly separate the inversion charge density (N{sub inv}) from the trapped charge density in high-k/InGaAs metal-oxide-semiconductor field-effect transistors (MOSFETs). This approach relies on the fitting of the frequency response of border traps, obtained from inversion-charge pumping measurements performed over a wide range of frequencies at room temperature on a single MOSFET, using a modified charge trapping model. The obtained model yielded the capture time constant and density of border traps located at energy levels aligned with the InGaAs conduction band. Moreover, the combination of MFICP and pulsed I{sub d}-V{sub g} measurements enabled an accurate effective mobility vs N{sub inv} extraction and analysis. The data obtained using the MFICP approach are consistent with the most recent reports on high-k/InGaAs.

Bias dependent charge trapping in MOSFETs during 1 and 6 MeV electron irradiation

Energy Technology Data Exchange (ETDEWEB)

Shinde, N.S. [Department of Chemical Engineering, Mie University, 5148507 (Japan); Kulkarni, V.R.; Mathakari, N.L.; Bhoraskar, V.N. [Department of Physics, Univeristy of Pune, Pune 411007 (India); Dhole, S.D. [Department of Physics, Univeristy of Pune, Pune 411007 (India)], E-mail: sanjay@physics.unipune.ernet.in

2008-06-15

To study irradiation-induced charge trapping in SiO{sub 2} and around the SiO{sub 2}-Si interface, depletion n-MOSFETs (metal-oxide-semiconductor field effect transistor) were used. The devices were gate biased during 1 and 6 MeV pulsed electron irradiation. The I{sub D}-V{sub DS} (drain current versus drain voltage) and I{sub D}-V{sub GS} (drain current versus gate voltage) characteristics were measured before and after irradiation. The shift in threshold voltage {delta}V{sub T} (difference in threshold voltage V{sub T} before and after irradiation) exhibited trends depending on the applied gate bias during 1 MeV electron irradiation. This behavior can be associated to the contribution of irradiation-induced negative charge {delta}N{sub IT} buildup around the SiO{sub 2}-Si interface to {delta}V{sub T}, which is sensitive to the electron tunneling from the substrates. However, only weak gate bias dependence was observed in 6 MeV electron irradiated devices. Independent of the energy loss and applied bias, the positive oxide trapped charge {delta}N{sub OT} is marginal and can be associated to thin and good quality of SiO{sub 2}. These results are explained using screening of free and acceptor states by the applied bias during irradiation, thereby reducing the total irradiation-induced charges.

Atomic-layer deposited IrO2 nanodots for charge-trap flash-memory devices

International Nuclear Information System (INIS)

Choi, Sangmoo; Cha, Young-Kwan; Seo, Bum-Seok; Park, Sangjin; Park, Ju-Hee; Shin, Sangmin; Seol, Kwang Soo; Park, Jong-Bong; Jung, Young-Soo; Park, Youngsoo; Park, Yoondong; Yoo, In-Kyeong; Choi, Suk-Ho

2007-01-01

Charge-trap flash- (CTF) memory structures have been fabricated by employing IrO 2 nanodots (NDs) grown by atomic-layer deposition. A band of isolated IrO 2 NDs of about 3 nm lying almost parallel to Si/SiO 2 interface is confirmed by transmission electron microscopy and x-ray photoelectron spectroscopy. The memory device with IrO 2 NDs shows much larger capacitance-voltage (C-V) hysteresis and memory window compared with the control sample without IrO 2 NDs. After annealing at 800 deg. C for 20 min, the ND device shows almost no change in the width of C-V hysteresis and the ND distribution. These results indicate that the IrO 2 NDs embedded in SiO 2 can be utilized as thermally stable, discrete charge traps, promising for metal oxide-ND-based CTF memory devices

Trapping-charging ability and electrical properties study of amorphous insulator by dielectric spectroscopy

International Nuclear Information System (INIS)

Mekni, Omar; Arifa, Hakim; Askri, Besma; Yangui, Béchir; Raouadi, Khaled; Damamme, Gilles

2014-01-01

Usually, the trapping phenomenon in insulating materials is studied by injecting charges using a Scanning Electron Microscope. In this work, we use the dielectric spectroscopy technique for showing a correlation between the dielectric properties and the trapping-charging ability of insulating materials. The evolution of the complex permittivity (real and imaginary parts) as a function of frequency and temperature reveals different types of relaxation according to the trapping ability of the material. We found that the space charge relaxation at low frequencies affects the real part of the complex permittivity ε ′ and the dissipation factor Tan(δ). We prove that the evolution of the imaginary part of the complex permittivity against temperature ε ″ =f(T) reflects the phenomenon of charge trapping and detrapping as well as trapped charge evolution Q p (T). We also use the electric modulus formalism to better identify the space charge relaxation. The investigation of trapping or conductive nature of insulating materials was mainly made by studying the activation energy and conductivity. The conduction and trapping parameters are determined using the Correlated Barrier Hopping (CBH) model in order to confirm the relation between electrical properties and charge trapping ability.

Electron trapping during irradiation in reoxidized nitrided oxide

International Nuclear Information System (INIS)

Mallik, A.; Vasi, J.; Chandorkar, A.N.

1993-01-01

Isochronal detrapping experiments have been performed following irradiation under different gate biases in reoxidized nitrided oxide (RNO) MOS capacitors. These show electron trapping by the nitridation-induced electron traps at low oxide fields during irradiation. A difference in the detrapping behavior of trapped holes and electrons is observed, with trapped holes being detrapped at relatively lower temperatures compared to trapped electrons. Electron trapping shows a strong dependence on tile magnitude of the applied gate bias during irradiation but is independent of its polarity. Conventional oxide devices, as expected, do not show any electron trapping during irradiation by the native electron traps. Finally, a comparison of the isochronal detrapping behavior following irradiation and following avalanche injection of electrons has been made to estimate the extent of electron trapping. The results show that electron trapping by the nitridation-induced electron traps does not play the dominant role in improving radiation performance of RNO, though its contribution cannot be completely neglected for low oxide field irradiations

Charge separation technique for metal-oxide-silicon capacitors in the presence of hydrogen deactivated dopants

International Nuclear Information System (INIS)

Witczak, Steven C.; Winokur, Peter S.; Lacoe, Ronald C.; Mayer, Donald C.

2000-01-01

An improved charge separation technique for metal-oxide-silicon (MOS) capacitors is presented which accounts for the deactivation of substrate dopants by hydrogen at elevated irradiation temperatures or small irradiation biases. Using high-frequency capacitance-voltage (C-V) measurements, radiation-induced inversion voltage shifts are separated into components due to oxide trapped charge, interface traps and deactivated dopants, where the latter is computed from a reduction in Si capacitance. In the limit of no radiation-induced dopant deactivation, this approach reduces to the standard midgap charge separation technique used widely for the analysis of room-temperature irradiations. The technique is demonstrated on a p-type MOS capacitor irradiated with 60 Co γ-rays at 100 C and zero bias, where the dopant deactivation is significant

Space-charge effects in Penning ion traps

Czech Academy of Sciences Publication Activity Database

Porobic, T.; Beck, M.; Breitenfeldt, M.; Couratin, C.; Finlay, P.; Knecht, A.; Fabian, X.; Friedag, P.; Flechard, X.; Lienard, E.; Ban, G.; Zákoucký, Dalibor; Soti, G.; Van Gorp, S.; Weinheimer, C.; Wursten, E.; Severijns, N.

2015-01-01

Roč. 785, JUN (2015), s. 153-162 ISSN 0168-9002 R&D Projects: GA MŠk LA08015; GA MŠk(CZ) LG13031 Institutional support: RVO:61389005 Keywords : Penning trap * space-charge * magnetron motion * ion trapping * buffer gas cooling * ion cyclotron resonance Subject RIV: BG - Nuclear, Atomic and Molecular Physics, Colliders Impact factor: 1.200, year: 2015

HITRAP: A Facility for Experiments with Trapped Highly Charged Ions

International Nuclear Information System (INIS)

Quint, W.; Dilling, J.; Djekic, S.; Haeffner, H.; Hermanspahn, N.; Kluge, H.-J.; Marx, G.; Moore, R.; Rodriguez, D.; Schoenfelder, J.; Sikler, G.; Valenzuela, T.; Verdu, J.; Weber, C.; Werth, G.

2001-01-01

HITRAP is a planned ion trap facility for capturing and cooling of highly charged ions produced at GSI in the heavy-ion complex of the UNILAC-SIS accelerators and the ESR storage ring. In this facility heavy highly charged ions up to uranium will be available as bare nuclei, hydrogen-like ions or few-electron systems at low temperatures. The trap for receiving and studying these ions is designed for operation at extremely high vacuum by cooling to cryogenic temperatures. The stored highly charged ions can be investigated in the trap itself or can be extracted from the trap at energies up to about 10 keV/q. The proposed physics experiments are collision studies with highly charged ions at well-defined low energies (eV/u), high-accuracy measurements to determine the g-factor of the electron bound in a hydrogen-like heavy ion and the atomic binding energies of few-electron systems, laser spectroscopy of HFS transitions and X-ray spectroscopy

Tunnel field-effect transistor charge-trapping memory with steep subthreshold slope and large memory window

Science.gov (United States)

Kino, Hisashi; Fukushima, Takafumi; Tanaka, Tetsu

2018-04-01

Charge-trapping memory requires the increase of bit density per cell and a larger memory window for lower-power operation. A tunnel field-effect transistor (TFET) can achieve to increase the bit density per cell owing to its steep subthreshold slope. In addition, a TFET structure has an asymmetric structure, which is promising for achieving a larger memory window. A TFET with the N-type gate shows a higher electric field between the P-type source and the N-type gate edge than the conventional FET structure. This high electric field enables large amounts of charges to be injected into the charge storage layer. In this study, we fabricated silicon-oxide-nitride-oxide-semiconductor (SONOS) memory devices with the TFET structure and observed a steep subthreshold slope and a larger memory window.

Experimental characterization of the Hitrap Cooler trap with highly charged ions.

OpenAIRE

Fedotova, Svetlana

2013-01-01

The HITRAP (Highly charged Ions TRAP)facility is being set up and commissioned at GSI, Darmstadt. It will provide heavy, highly charged ions at low velocities to high-precision atomic physics experiments. Within this work the Cooler trap- the key element of the HITRAP facility was tested. The Cooler trap was assembled, aligned, and commissioned in trapping experiments with ions from off-line sources.The work performed within the scope of this thesis provided the baseline for further operation...

The electron trap parameter extraction-based investigation of the relationship between charge trapping and activation energy in IGZO TFTs under positive bias temperature stress

Science.gov (United States)

Rhee, Jihyun; Choi, Sungju; Kang, Hara; Kim, Jae-Young; Ko, Daehyun; Ahn, Geumho; Jung, Haesun; Choi, Sung-Jin; Myong Kim, Dong; Kim, Dae Hwan

2018-02-01

Experimental extraction of the electron trap parameters which are associated with charge trapping into gate insulators under the positive bias temperature stress (PBTS) is proposed and demonstrated for the first time in amorphous indium-gallium-zinc-oxide thin-film transistors. This was done by combining the PBTS/recovery time-evolution of the experimentally decomposed threshold voltage shift (ΔVT) and the technology computer-aided design (TCAD)-based charge trapping simulation. The extracted parameters were the trap density (NOT) = 2.6 × 1018 cm-3, the trap energy level (ΔET) = 0.6 eV, and the capture cross section (σ0) = 3 × 10-19 cm2. Furthermore, based on the established TCAD framework, the relationship between the electron trap parameters and the activation energy (Ea) is comprehensively investigated. It is found that Ea increases with an increase in σ0, whereas Ea is independent of NOT. In addition, as ΔET increases, Ea decreases in the electron trapping-dominant regime (low ΔET) and increases again in the Poole-Frenkel (PF) emission/hopping-dominant regime (high ΔET). Moreover, our results suggest that the cross-over ΔET point originates from the complicated temperature-dependent competition between the capture rate and the emission rate. The PBTS bias dependence of the relationship between Ea and ΔET suggests that the electric field dependence of the PF emission-based electron hopping is stronger than that of the thermionic field emission-based electron trapping.

Characterization of trapped charges distribution in terms of mirror plot curve.

Science.gov (United States)

Al-Obaidi, Hassan N; Mahdi, Ali S; Khaleel, Imad H

2018-01-01

Accumulation of charges (electrons) at the specimen surface in scanning electron microscope (SEM) lead to generate an electrostatic potential. By using the method of image charges, this potential is defined in the chamber's space of such apparatus. The deduced formula is expressed in terms a general volumetric distribution which proposed to be an infinitesimal spherical extension. With aid of a binomial theorem the defined potential is expanded to a multipolar form. Then resultant formula is adopted to modify a novel mirror plot equation so as to detect the real distribution of trapped charges. Simulation results reveal that trapped charges may take a various sort of arrangement such as monopole, quadruple and octuple. But existence of any of these arrangements alone may never be take place, rather are some a formations of a mix of them. Influence of each type of these profiles depends on the distance between the incident electron and surface of a sample. Result also shows that trapped charge's amount of trapped charges can refer to a threshold for failing of point charge approximation. Copyright © 2017 Elsevier B.V. All rights reserved.

CrossRef Space-charge effects in Penning ion traps

CERN Document Server

Porobić, T; Breitenfeldt, M; Couratin, C; Finlay, P; Knecht, A; Fabian, X; Friedag, P; Fléchard, X; Liénard, E; Ban, G; Zákoucký, D; Soti, G; Van Gorp, S; Weinheimer, Ch; Wursten, E; Severijns, N

2015-01-01

The influence of space-charge on ion cyclotron resonances and magnetron eigenfrequency in a gas-filled Penning ion trap has been investigated. Off-line measurements with View the MathML source using the cooling trap of the WITCH retardation spectrometer-based setup at ISOLDE/CERN were performed. Experimental ion cyclotron resonances were compared with ab initio Coulomb simulations and found to be in agreement. As an important systematic effect of the WITCH experiment, the magnetron eigenfrequency of the ion cloud was studied under increasing space-charge conditions. Finally, the helium buffer gas pressure in the Penning trap was determined by comparing experimental cooling rates with simulations.

Equivalent distributed capacitance model of oxide traps on frequency dispersion of C – V curve for MOS capacitors

International Nuclear Information System (INIS)

Lu Han-Han; Xu Jing-Ping; Liu Lu; Lai Pui-To; Tang Wing-Man

2016-01-01

An equivalent distributed capacitance model is established by considering only the gate oxide-trap capacitance to explain the frequency dispersion in the C – V curve of MOS capacitors measured for a frequency range from 1 kHz to 1 MHz. The proposed model is based on the Fermi–Dirac statistics and the charging/discharging effects of the oxide traps induced by a small ac signal. The validity of the proposed model is confirmed by the good agreement between the simulated results and experimental data. Simulations indicate that the capacitance dispersion of an MOS capacitor under accumulation and near flatband is mainly caused by traps adjacent to the oxide/semiconductor interface, with negligible effects from the traps far from the interface, and the relevant distance from the interface at which the traps can still contribute to the gate capacitance is also discussed. In addition, by excluding the negligible effect of oxide-trap conductance, the model avoids the use of imaginary numbers and complex calculations, and thus is simple and intuitive. (paper)

Optical patterning of trapped charge in nitrogen-doped diamond

Science.gov (United States)

Jayakumar, Harishankar; Henshaw, Jacob; Dhomkar, Siddharth; Pagliero, Daniela; Laraoui, Abdelghani; Manson, Neil B.; Albu, Remus; Doherty, Marcus W.; Meriles, Carlos A.

2016-08-01

The nitrogen-vacancy (NV) centre in diamond is emerging as a promising platform for solid-state quantum information processing and nanoscale metrology. Of interest in these applications is the manipulation of the NV charge, which can be attained by optical excitation. Here, we use two-colour optical microscopy to investigate the dynamics of NV photo-ionization, charge diffusion and trapping in type-1b diamond. We combine fixed-point laser excitation and scanning fluorescence imaging to locally alter the concentration of negatively charged NVs, and to subsequently probe the corresponding redistribution of charge. We uncover the formation of spatial patterns of trapped charge, which we qualitatively reproduce via a model of the interplay between photo-excited carriers and atomic defects. Further, by using the NV as a probe, we map the relative fraction of positively charged nitrogen on localized optical excitation. These observations may prove important to transporting quantum information between NVs or to developing three-dimensional, charge-based memories.

Channel mobility degradation and charge trapping in high-k/metal gate NMOSFETs

International Nuclear Information System (INIS)

Mathew, Shajan; Bera, L.K.; Balasubramanian, N.; Joo, M.S.; Cho, B.J.

2004-01-01

NMOSFETs with Metalo-Organic Chemical Vapor Deposited (MOCVD) HfAlO gate dielectric and TiN metal gate have been fabricated. Channel electron mobility was measured using the split-CV method and compared with SiO 2 devices. All high-k devices showed lower mobility compared with SiO 2 reference devices. High-k MOSFETs exhibited significant charge trapping and threshold instability. Threshold voltage recovery with time was studied on devices with oxide/nitride interfacial layer between high-k film and silicon substrate

Penning traps with unitary architecture for storage of highly charged ions.

Science.gov (United States)

Tan, Joseph N; Brewer, Samuel M; Guise, Nicholas D

2012-02-01

Penning traps are made extremely compact by embedding rare-earth permanent magnets in the electrode structure. Axially-oriented NdFeB magnets are used in unitary architectures that couple the electric and magnetic components into an integrated structure. We have constructed a two-magnet Penning trap with radial access to enable the use of laser or atomic beams, as well as the collection of light. An experimental apparatus equipped with ion optics is installed at the NIST electron beam ion trap (EBIT) facility, constrained to fit within 1 meter at the end of a horizontal beamline for transporting highly charged ions. Highly charged ions of neon and argon, extracted with initial energies up to 4000 eV per unit charge, are captured and stored to study the confinement properties of a one-magnet trap and a two-magnet trap. Design considerations and some test results are discussed.

Penning traps with unitary architecture for storage of highly charged ions

International Nuclear Information System (INIS)

Tan, Joseph N.; Guise, Nicholas D.; Brewer, Samuel M.

2012-01-01

Penning traps are made extremely compact by embedding rare-earth permanent magnets in the electrode structure. Axially-oriented NdFeB magnets are used in unitary architectures that couple the electric and magnetic components into an integrated structure. We have constructed a two-magnet Penning trap with radial access to enable the use of laser or atomic beams, as well as the collection of light. An experimental apparatus equipped with ion optics is installed at the NIST electron beam ion trap (EBIT) facility, constrained to fit within 1 meter at the end of a horizontal beamline for transporting highly charged ions. Highly charged ions of neon and argon, extracted with initial energies up to 4000 eV per unit charge, are captured and stored to study the confinement properties of a one-magnet trap and a two-magnet trap. Design considerations and some test results are discussed.

Effects of thickness and geometric variations in the oxide gate stack on the nonvolatile memory behaviors of charge-trap memory thin-film transistors

Science.gov (United States)

Bak, Jun Yong; Kim, So-Jung; Byun, Chun-Won; Pi, Jae-Eun; Ryu, Min-Ki; Hwang, Chi Sun; Yoon, Sung-Min

2015-09-01

Device designs of charge-trap oxide memory thin-film transistors (CTM-TFTs) were investigated to enhance their nonvolatile memory performances. The first strategy was to optimize the film thicknesses of the tunneling and charge-trap (CT) layers in order to meet requirements of both higher operation speed and longer retention time. While the program speed and memory window were improved for the device with a thinner tunneling layer, a long retention time was obtained only for the device with a tunneling layer thicker than 5 nm. The carrier concentration and charge-trap densities were optimized in the 30-nm-thick CT layer. It was observed that 10-nm-thick tunneling, 30-nm-thick CT, and 50-nm-thick blocking layers were the best configuration for our proposed CTM-TFTs, where a memory on/off margin higher than 107 was obtained, and a memory margin of 6.6 × 103 was retained even after the lapse of 105 s. The second strategy was to examine the effects of the geometrical relations between the CT and active layers for the applications of memory elements embedded in circuitries. The CTM-TFTs fabricated without an overlap between the CT layer and the drain electrode showed an enhanced program speed by the reduced parasitic capacitance. The drain-bias disturbance for the memory off-state was effectively suppressed even when a higher read-out drain voltage was applied. Appropriate device design parameters, such as the film thicknesses of each component layer and the geometrical relations between them, can improve the memory performances and expand the application fields of the proposed CTM-TFTs.

Trapped charged particles a graduate textbook with problems and solutions

CERN Document Server

Madsen, Niels; Thompson, Richard C

2016-01-01

At Les Houches in January 2015, experts in the field of particle trapping came together to discuss the fundamental physics of traps and the different types of applications. This textbook collates the lectures delivered there; the Second Winter School on Physics with Trapped Charged Particles. Taken as a whole, the book gives an overview of why traps for charged particles are important, how they work, their special features and limitations, and their application in areas such as precision measurements, mass spectrometry, optical clocks, plasma physics, antihydrogen creation, quantum simulation and quantum information processing. Chapters from various world experts include those on the basic properties of Penning traps, RF traps and particle accelerators, as well as those covering important practical aspects such as vacuum systems, detection techniques, and different types of particle cooling including laser cooling. Finally, individual chapters deal with the different areas of application listed above. Each ...

Trap state passivation improved hot-carrier instability by zirconium-doping in hafnium oxide in a nanoscale n-metal-oxide semiconductor-field effect transistors with high-k/metal gate

International Nuclear Information System (INIS)

Liu, Hsi-Wen; Tsai, Jyun-Yu; Liu, Kuan-Ju; Lu, Ying-Hsin; Chang, Ting-Chang; Chen, Ching-En; Tseng, Tseung-Yuen; Lin, Chien-Yu; Cheng, Osbert; Huang, Cheng-Tung; Ye, Yi-Han

2016-01-01

This work investigates the effect on hot carrier degradation (HCD) of doping zirconium into the hafnium oxide high-k layer in the nanoscale high-k/metal gate n-channel metal-oxide-semiconductor field-effect-transistors. Previous n-metal-oxide semiconductor-field effect transistor studies demonstrated that zirconium-doped hafnium oxide reduces charge trapping and improves positive bias temperature instability. In this work, a clear reduction in HCD is observed with zirconium-doped hafnium oxide because channel hot electron (CHE) trapping in pre-existing high-k bulk defects is the main degradation mechanism. However, this reduced HCD became ineffective at ultra-low temperature, since CHE traps in the deeper bulk defects at ultra-low temperature, while zirconium-doping only passivates shallow bulk defects.

Defect states and charge trapping characteristics of HfO2 films for high performance nonvolatile memory applications

International Nuclear Information System (INIS)

Zhang, Y.; Shao, Y. Y.; Lu, X. B.; Zeng, M.; Zhang, Z.; Gao, X. S.; Zhang, X. J.; Liu, J.-M.; Dai, J. Y.

2014-01-01

In this work, we present significant charge trapping memory effects of the metal-hafnium oxide-SiO 2 -Si (MHOS) structure. The devices based on 800 °C annealed HfO 2 film exhibit a large memory window of ∼5.1 V under ±10 V sweeping voltages and excellent charge retention properties with only small charge loss of ∼2.6% after more than 10 4  s retention. The outstanding memory characteristics are attributed to the high density of deep defect states in HfO 2 films. We investigated the defect states in the HfO 2 films by photoluminescence and photoluminescence excitation measurements and found that the defect states distributed in deep energy levels ranging from 1.1 eV to 2.9 eV below the conduction band. Our work provides further insights for the charge trapping mechanisms of the HfO 2 based MHOS devices.

A comparative study of charge trapping in HfO{sub 2}/Al{sub 2}O{sub 3} and ZrO{sub 2}/Al{sub 2}O{sub 3} based multilayered metal/high-k/oxide/Si structures

Energy Technology Data Exchange (ETDEWEB)

Spassov, D., E-mail: d_spassov@abv.bg [Institute of Solid State Physics, Bulgarian Academy of Sciences, Tzarigradsko Chaussee 72, Sofia 1784 (Bulgaria); Skeparovski, A. [Institute of Physics, Faculty of Natural Sciences and Mathematics, University “Ss. Cyril and Methodius”, Arhimedova 3, 1000 Skopje (Macedonia, The Former Yugoslav Republic of); Paskaleva, A. [Institute of Solid State Physics, Bulgarian Academy of Sciences, Tzarigradsko Chaussee 72, Sofia 1784 (Bulgaria); Novkovski, N. [Institute of Physics, Faculty of Natural Sciences and Mathematics, University “Ss. Cyril and Methodius”, Arhimedova 3, 1000 Skopje (Macedonia, The Former Yugoslav Republic of)

2016-09-01

The electrical properties of multilayered HfO{sub 2}/Al{sub 2}O{sub 3}/HfO{sub 2}/SiO{sub 2} and ZrO{sub 2}/Al{sub 2}O{sub 3}/ZrO{sub 2}/SiO{sub 2} metal-oxide semiconductor capacitors were investigated in order to evaluate the possibility of their application in charge-trapping non-volatile memory devices. The stacks were deposited by reactive radiofrequency magnetron sputtering on Si substrates with thermal SiO{sub 2} with a thickness ranging from 2 to 5 nm. Both types of stacks show negative initial oxide charge and its density is higher for HfO{sub 2}-based structures. Memory window up to 6V at sweeping voltage range of ± 16V was obtained for HfO{sub 2}-based stacks. The hysteresis in these structures is mainly due to a trapping of electrons injected from the Si substrate. The charge-trapping properties of ZrO{sub 2}-based samples are compromised by the high leakage currents and the dielectric breakdown. The conduction through the capacitors at low applied voltages results from hopping of thermally excited electrons from one isolated state to another. The energy depth of the traps participating in the hopping conduction was determined as ~ 0.7 eV for the HfO{sub 2}-based layers and ~ 0.6 eV for ZrO{sub 2}-based ones, originating from negatively charged oxygen vacancies. At high electric fields, the current voltage characteristics were interpreted in terms of space charge limited currents, Fowler–Nordheim tunneling, Schottky emission, and Poole–Frenkel mechanism. The charge retention characteristics do not depend on the thickness of the tunnel SiO{sub 2}. - Highlights: • Sputtered HfO{sub 2}/Al{sub 2}O{sub 3}/HfO{sub 2} and ZrO{sub 2}/Al{sub 2}O{sub 3}/ZrO{sub 2} charge-trapping layers were studied. • HfO{sub 2}/Al{sub 2}O{sub 3}/HfO{sub 2} stacks show memory window up to 6 V and good retention times. • Negatively charged oxygen vacancies were identified as main defects in the stacks. • Electrical breakdown compromise the charge-trapping properties

Stability of Trapped Electrons in SiO(2)

International Nuclear Information System (INIS)

Fleetwood, D.M.; Winokur, P.S.

1999-01-01

Thermally stimulated current and capacitance voltage methods are used to investigate the thermal stability of trapped electrons associated with radiation-induced trapped positive charge in metal-oxide-semiconductor capacitors. The density of deeply trapped electrons in radiation-hardened 45 nm oxides exceeds that of shallow electrons by a factor of ∼3 after radiation exposure, and by up to a factor of 10 or more during biased annealing. Shallow electron traps anneal faster than deep traps, and seem to be at least qualitatively consistent with the model of Lelis et al. Deeper traps maybe part of a fundamentally distinct dipole complex, and/or have shifted energy levels that inhibit charge exchange with the Si

Electronic structure and charge transport in nonstoichiometric tantalum oxide

Science.gov (United States)

Perevalov, T. V.; Gritsenko, V. A.; Gismatulin, A. A.; Voronkovskii, V. A.; Gerasimova, A. K.; Aliev, V. Sh; Prosvirin, I. A.

2018-06-01

The atomic and electronic structure of nonstoichiometric oxygen-deficient tantalum oxide TaO x<2.5 grown by ion beam sputtering deposition was studied. The TaO x film content was analyzed by x-ray photoelectron spectroscopy and by quantum-chemistry simulation. TaO x is composed of Ta2O5, metallic tantalum clusters and tantalum suboxides. A method for evaluating the stoichiometry parameter of TaO x from the comparison of experimental and theoretical photoelectron valence band spectra is proposed. The charge transport properties of TaO x were experimentally studied and the transport mechanism was quantitatively analyzed with four theoretical dielectric conductivity models. It was found that the charge transport in almost stoichiometric and nonstoichiometric tantalum oxide can be consistently described by the phonon-assisted tunneling between traps.

Equivalent distributed capacitance model of oxide traps on frequency dispersion of C-V curve for MOS capacitors

Science.gov (United States)

Lu, Han-Han; Xu, Jing-Ping; Liu, Lu; Lai, Pui-To; Tang, Wing-Man

2016-11-01

An equivalent distributed capacitance model is established by considering only the gate oxide-trap capacitance to explain the frequency dispersion in the C-V curve of MOS capacitors measured for a frequency range from 1 kHz to 1 MHz. The proposed model is based on the Fermi-Dirac statistics and the charging/discharging effects of the oxide traps induced by a small ac signal. The validity of the proposed model is confirmed by the good agreement between the simulated results and experimental data. Simulations indicate that the capacitance dispersion of an MOS capacitor under accumulation and near flatband is mainly caused by traps adjacent to the oxide/semiconductor interface, with negligible effects from the traps far from the interface, and the relevant distance from the interface at which the traps can still contribute to the gate capacitance is also discussed. In addition, by excluding the negligible effect of oxide-trap conductance, the model avoids the use of imaginary numbers and complex calculations, and thus is simple and intuitive. Project supported by the National Natural Science Foundation of China (Grant Nos. 61176100 and 61274112), the University Development Fund of the University of Hong Kong, China (Grant No. 00600009), and the Hong Kong Polytechnic University, China (Grant No. 1-ZVB1).

Hydration of excess electrons trapped in charge pockets on molecular surfaces

Science.gov (United States)

Jalbout, Abraham F.; Del Castillo, R.; Adamowicz, Ludwik

2007-01-01

In this work we strive to design a novel electron trap located on a molecular surface. The process of electron trapping involves hydration of the trapped electron. Previous calculations on surface electron trapping revealed that clusters of OH groups can form stable hydrogen-bonded networks on one side of a hydrocarbon surface (i.e. cyclohexane sheets), while the hydrogen atoms on the opposite side of the surface form pockets of positive charge that can attract extra negative charge. The excess electron density on such surfaces can be further stabilized by interactions with water molecules. Our calculations show that these anionic systems are stable with respect to vertical electron detachment (VDE).

Photo-reactive charge trapping memory based on lanthanide complex

Science.gov (United States)

Zhuang, Jiaqing; Lo, Wai-Sum; Zhou, Li; Sun, Qi-Jun; Chan, Chi-Fai; Zhou, Ye; Han, Su-Ting; Yan, Yan; Wong, Wing-Tak; Wong, Ka-Leung; Roy, V. A. L.

2015-10-01

Traditional utilization of photo-induced excitons is popularly but restricted in the fields of photovoltaic devices as well as photodetectors, and efforts on broadening its function have always been attempted. However, rare reports are available on organic field effect transistor (OFET) memory employing photo-induced charges. Here, we demonstrate an OFET memory containing a novel organic lanthanide complex Eu(tta)3ppta (Eu(tta)3 = Europium(III) thenoyltrifluoroacetonate, ppta = 2-phenyl-4,6-bis(pyrazol-1-yl)-1,3,5-triazine), in which the photo-induced charges can be successfully trapped and detrapped. The luminescent complex emits intense red emission upon ultraviolet (UV) light excitation and serves as a trapping element of holes injected from the pentacene semiconductor layer. Memory window can be significantly enlarged by light-assisted programming and erasing procedures, during which the photo-induced excitons in the semiconductor layer are separated by voltage bias. The enhancement of memory window is attributed to the increasing number of photo-induced excitons by the UV light. The charges are stored in this luminescent complex for at least 104 s after withdrawing voltage bias. The present study on photo-assisted novel memory may motivate the research on a new type of light tunable charge trapping photo-reactive memory devices.

Deep electron traps in HfO_2-based metal-oxide-semiconductor capacitors

International Nuclear Information System (INIS)

Salomone, L. Sambuco; Lipovetzky, J.; Carbonetto, S.H.; García Inza, M.A.; Redin, E.G.; Campabadal, F.

2016-01-01

Hafnium oxide (HfO_2) is currently considered to be a good candidate to take part as a component in charge-trapping nonvolatile memories. In this work, the electric field and time dependences of the electron trapping/detrapping processes are studied through a constant capacitance voltage transient technique on metal-oxide-semiconductor capacitors with atomic layer deposited HfO_2 as insulating layer. A tunneling-based model is proposed to reproduce the experimental results, obtaining fair agreement between experiments and simulations. From the fitting procedure, a band of defects is identified, located in the first 1.7 nm from the Si/HfO_2 interface at an energy level E_t = 1.59 eV below the HfO_2 conduction band edge with density N_t = 1.36 × 10"1"9 cm"−"3. A simplified analytical version of the model is proposed in order to ease the fitting procedure for the low applied voltage case considered in this work. - Highlights: • We characterized deep electron trapping/detrapping in HfO_2 structures. • We modeled the experimental results through a tunneling-based model. • We obtained an electron trap energy level of 1.59 eV below conduction band edge. • We obtained a spatial trap distribution extending 1.7 nm within the insulator. • A simplified tunneling front model is able to reproduce the experimental results.

Theoretical Evaluation of the Escape Rate of Charged Particles Trapped in a Potential Energy Well

International Nuclear Information System (INIS)

Chang Yongbin; Ordonez, C.A.

2003-01-01

In various types of charged particle sources and traps, charged particles are temporarily trapped within a potential energy well. In the work reported, a theoretical evaluation of the escape rate of trapped charged particles is carried out. As a specific example, the loss rate is evaluated for trapped plasma particles that are undergoing both collisions among themselves and collisions with particles of a different plasma species having a different temperature. Conditions are considered in which both species are confined within a nested Penning trap

Nested Penning Trap as a Source of Singly Charged Ions

International Nuclear Information System (INIS)

Ordonez, C.A.

2003-01-01

In the work reported, the possibility of using a nested Penning trap as a high purity source of low-charge-state ions is studied. For the configuration considered, a relatively dense ion plasma is confined by a three-dimensional electric potential well. The three-dimensional well is produced by the electric field generated by both the trap electrodes and a trapped electron plasma. The ion and electron plasmas are each considered to have Maxwellian velocity distributions. However, it is shown that the electron plasma must have a temperature that is higher than that of the ion plasma when the ions have low charge states. The work reported includes a self-consistent prediction of a possible plasma equilibrium

Current leakage relaxation and charge trapping in ultra-porous low-k materials

International Nuclear Information System (INIS)

Borja, Juan; Plawsky, Joel L.; Gill, William N.; Lu, T.-M.; Bakhru, Hassaram

2014-01-01

Time dependent dielectric failure has become a pivotal aspect of interconnect design as industry pursues integration of sub-22 nm process-technology nodes. Literature has provided key information about the role played by individual species such as electrons, holes, ions, and neutral impurity atoms. However, no mechanism has been shown to describe how such species interact and influence failure. Current leakage relaxation in low-k dielectrics was studied using bipolar field experiments to gain insight into how charge carrier flow becomes impeded by defects within the dielectric matrix. Leakage current decay was correlated to injection and trapping of electrons. We show that current relaxation upon inversion of the applied field can be described by the stretched exponential function. The kinetics of charge trapping events are consistent with a time-dependent reaction rate constant, k=k 0 ⋅(t+1) β−1 , where 0 < β < 1. Such dynamics have previously been observed in studies of charge trapping reactions in amorphous solids by W. H. Hamill and K. Funabashi, Phys. Rev. B 16, 5523–5527 (1977). We explain the relaxation process in charge trapping events by introducing a nonlinear charge trapping model. This model provides a description on the manner in which the transport of mobile defects affects the long-tail current relaxation processes in low-k films

Winter School on Physics with Trapped Charged Particles - Abstracts and slides

International Nuclear Information System (INIS)

Pedersen, T.S.; Thompson, R.C.; Madsen, N.; Champenois, C.; Anderegg, F.; Fajans, J.; Knoop, M.; Scott Hangst, J.; Hilico, L.; Ulmer, S.; Blaum, K.; Drewsen, M.; Roos, C.; Schmidt, P.

2016-01-01

This winter school covered various topics of the physics of trapped charged particles. Lectures covered basic trap physics and recent developments in Penning traps, Paul traps..., collective behavior and non-neutral plasmas, as well as applications for fundamental physics, laser cooling, precision spectroscopy and quantum information. This document gathers a booklet of abstracts and the available slides of the presentations

Charge trapping/de-trapping in nitrided SiO2 dielectrics and its influence on device reliability

Science.gov (United States)

Kambour, Kenneth; Hjalmarson, Harold; Nguyen, Duc; Kouhestani, Camron; Devine, Roderick

2012-02-01

Field effect devices with insulator gate dielectrics are excellent test vehicles to probe the physics of defects and charge trapping in the insulator/ semiconductor structure. p-channel field effect device reliability under negative bias stressing has been identified to originate from at least two terms: a) charged defect generation at the Si substrate/SiOxNy interface and b) charge trapping at neutral defect pre-cursors in the ``bulk'' of the SiOxNy beyond the interface. Measurements of transistor characteristics enable extraction of the two terms. We report the results of such measurements and demonstrate that short time effects are associated primarily with electric field assisted tunneling of holes from the inversion layer to neutral traps. This is confirmed by bias stressing measurements at different frequencies in the range 1 Hz to 2 MHz. First principles modeling of the tunneling/trapping phenomena is presented. K.Kambour worked under contract FA9453-08-C-0245 with the Air Force Research Laboratory/RVSE. Sandia National Labs is a multi-program laboratory managed and operated by Sandia Corporation, a wholly owned subsidiary of Lockheed Martin Corporation, for the U.S. Department of Energy's National Nuclear Security Administration under contract DE-AC04-94AL85000.

4th International Conference on Trapped Charged Particles and Fundamental Physics

CERN Document Server

Comyn, M; Thomson, J; Gwinner, G; TCP'06; TCP 2006

2007-01-01

The TCP06 conference in Parksville on Vancouver Island showcased the impressive progress in the study of fundamental physics using trapped charged particles. Atom and ion trapping has revolutionized atomic physics and related fields. It has proven to be particularly useful for fundamental physics experiments, as the tight control over the particles' degrees of freedom leads to increased precision and efficient use of exotic species such as radioactive atoms or anti-matter. The topics of the meeting included fundamental interactions and symmetries, quantum electrodynamics, quantum state manipulation and quantum information, precision spectroscopy and frequency standards, storage ring physics, highly charged ions in traps, traps for radioactive isotopes, plasmas and collective behaviour, and anti-hydrogen. Highlights from related fields such as fundamental physics studies with neutral, trapped atoms were also presented. The combination of overview articles by leaders in the field and detailed reports on recent ...

Charge trapping at organic/self-assembly molecule interfaces studied by electrical switching behaviour in a crosspoint structure

International Nuclear Information System (INIS)

Li Yun; Pan Lijia; Pu Lin; Shi Yi; Liu Chuan; Tsukagoshi, Kazuhito

2012-01-01

Charge trapping at organic/self-assembly molecule (SAM) interfaces is studied by the electrical switching behaviour in a crosspoint structure, where interfacial charge trapping tunes the potential barrier of the SAM layer. The sample with rubrene exhibits the write-once read-many-times memory effect, which is due to the interfacial charges trapped at deep states. On the other hand, the sample with 2-amino-4,5-dicyanoimidazole presents recyclable conduction transition, which results from the trapped charges distributed at shallow states. Moreover, the percentage of the charges trapped at shallow states can be estimated from electrical transition levels. (paper)

Charge trapping at organic/self-assembly molecule interfaces studied by electrical switching behaviour in a crosspoint structure

Science.gov (United States)

Li, Yun; Liu, Chuan; Pan, Lijia; Pu, Lin; Tsukagoshi, Kazuhito; Shi, Yi

2012-01-01

Charge trapping at organic/self-assembly molecule (SAM) interfaces is studied by the electrical switching behaviour in a crosspoint structure, where interfacial charge trapping tunes the potential barrier of the SAM layer. The sample with rubrene exhibits the write-once read-many-times memory effect, which is due to the interfacial charges trapped at deep states. On the other hand, the sample with 2-amino-4,5-dicyanoimidazole presents recyclable conduction transition, which results from the trapped charges distributed at shallow states. Moreover, the percentage of the charges trapped at shallow states can be estimated from electrical transition levels.

Effect of Coulomb scattering from trapped charges on the mobility in an organic field-effect transistor

NARCIS (Netherlands)

Sharma, A.; Janssen, N.M.A.; Matthijssen, S.J.G.; de Leeuw, D.M.; Kemerink, M.; Bobbert, P.A.

2011-01-01

We investigate the effect of Coulomb scattering from trapped charges on the mobility in the two-dimensional channel of an organic field-effect transistor. The number of trapped charges can be tuned by applying a prolonged gate bias. Surprisingly, after increasing the number of trapped charges to a

Charge trapping and carrier transport mechanism in silicon-rich silicon oxynitride

International Nuclear Information System (INIS)

Yu Zhenrui; Aceves, Mariano; Carrillo, Jesus; Lopez-Estopier, Rosa

2006-01-01

The charge-trapping and carrier transport properties of silicon-rich silicon oxynitride (SRO:N) were studied. The SRO:N films were deposited by low pressure chemical vapor deposition. Infrared (IR) and transmission electron microscopic (TEM) measurements were performed to characterize their structural properties. Capacitance versus voltage and current versus voltage measurements (I-V) were used to study the charge-trapping and carrier transport mechanism. IR and TEM measurements revealed the existence of Si nanodots in SRO:N films. I-V measurements revealed that there are two conduction regimes divided by a threshold voltage V T . When the applied voltage is smaller than V T , the current is dominated by the charge transfer between the SRO:N and substrate; and in this regime only dynamic charging/discharging of the SRO:N layer is observed. When the voltage is larger than V T , the current increases rapidly and is dominated by the Poole-Frenkel mechanism; and in this regime, large permanent trapped charge density is obtained. Nitrogen incorporation significantly reduced the silicon nanodots or defects near the SRO:N/Si interface. However, a significant increase of the density of silicon nanodot in the bulk of the SRO:N layer is obtained

The control mechanism of surface traps on surface charge behavior in alumina-filled epoxy composites

International Nuclear Information System (INIS)

Li, Chuanyang; Hu, Jun; Lin, Chuanjie; He, Jinliang

2016-01-01

To investigate the role surface traps play in the charge injection and transfer behavior of alumina-filled epoxy composites, surface traps with different trap levels are introduced by different surface modification methods which include dielectric barrier discharges plasma, direct fluorination, and Cr 2 O 3 coating. The resulting surface physicochemical characteristics of experimental samples were observed using atomic force microscopy, scanning electron microscopy and fourier transform infrared spectroscopy. The surface potential under dc voltage was detected and the trap level distribution was measured. The results suggest that the surface morphology of the experimental samples differs dramatically after treatment with different surface modification methods. Different surface trap distributions directly determine the charge injection and transfer property along the surface. Shallow traps with trap level of 1.03–1.11 eV and 1.06–1.13 eV introduced by plasma and fluorination modifications are conducive for charge transport along the insulating surface, and the surface potential can be modified, producing a smoother potential curve. The Cr 2 O 3 coating can introduce a large number of deep traps with energy levels ranging from 1.09 to 1.15 eV. These can prevent charge injection through the reversed electric field formed by intensive trapped charges in the Cr 2 O 3 coatings. (paper)

Interfacial charge trapping in the polymer solar cells and its elimination by solvent annealing

Directory of Open Access Journals (Sweden)

A. K. Chauhan

2016-09-01

Full Text Available The PCDTBT:PCBM solar cells were fabricated adopting a tandem layer approach to investigate the critical issues of charge trapping, radiation absorption, and efficiency in polymer solar cells. This layered structure was found to be a source of charge trapping which was identified and confirmed by impedance spectroscopy. The low efficiency in multilayered structures was related to trapping of photo-generated carriers and low carrier mobility, and thus an increased recombination. Solvent annealing of the structures in tetrahydrofuran vapors was found beneficial in homogenizing the active layer, dissolving additional interfaces, and elimination of charge traps which improved the carrier mobilities and eventually the device efficiencies.

Model for thickness dependence of radiation charging in MOS structures

Science.gov (United States)

Viswanathan, C. R.; Maserjian, J.

1976-01-01

The model considers charge buildup in MOS structures due to hole trapping in the oxide and the creation of sheet charge at the silicon interface. The contribution of hole trapping causes the flatband voltage to increase with thickness in a manner in which square and cube dependences are limiting cases. Experimental measurements on samples covering a 200 - 1000 A range of oxide thickness are consistent with the model, using independently obtained values of hole-trapping parameters. An important finding of our experimental results is that a negative interface charge contribution due to surface states created during irradiation compensates most of the positive charge in the oxide at flatband. The tendency of the surface states to 'track' the positive charge buildup in the oxide, for all thicknesses, applies both in creation during irradiation and in annihilation during annealing. An explanation is proposed based on the common defect origin of hole traps and potential surface states.

Evaporative cooling of highly charged ions in EBIT [Electron Beam Ion Trap]: An experimental realization

International Nuclear Information System (INIS)

Schneider, M.B.; Levine, M.A.; Bennett, C.L.; Henderson, J.R.; Knapp, D.A.; Marrs, R.E.

1988-01-01

Both the total number and trapping lifetime of near-neon-like gold ions held in an electron beam ion trap have been greatly increased by a process of 'evaporative cooling'. A continuous flow of low-charge-state ions into the trap cools the high-charge-state ions in the trap. Preliminary experimental results using titanium ions as a coolant are presented. 8 refs., 6 figs., 2 tabs

Electron spin resonance characterization of trapping centers in Unibond reg-sign buried oxides

International Nuclear Information System (INIS)

Conley, J.F. Jr.; Lenahan, P.M.; Wallace, B.D.

1996-01-01

Electron spin resonance and capacitance vs. voltage measurements are used to evaluate the radiation response of Unibond buried oxides. When damaged by hole injection, it is found that Unibond reg-sign buried oxides exhibit a rough correspondence between E' centers and positive charge as well as generation of P b centers at the Unibond buried oxide/Si interface. In these respects, Unibond buried oxides qualitatively resemble thermal SiO 2 . However, a hydrogen complexed E' center known as the 74 G doublet is also detected in the Unibond buried oxides. This defect is not detectable in thermal SiO 2 under similar circumstances. Since the presence of 74 G doublet center is generally indicative of very high hydrogen content and since hydrogen is clearly a significant participant in radiation damage, this result suggests a qualitative difference between the radiation response of Unibond and thermal SiO 2 . Unibond results are also compared and contrasted with similar investigations on separation-by-implanted-oxygen (SIMOX) buried oxides. Although the charge trapping response of Unibond buried oxides may be inferior to that of radiation hardened thermal SiO 2 , it appears to be more simple and superior to that of SIMOX buried oxides

Field oxide radiation damage measurements in silicon strip detectors

Energy Technology Data Exchange (ETDEWEB)

Laakso, M [Particle Detector Group, Fermilab, Batavia, IL (United States) Research Inst. for High Energy Physics (SEFT), Helsinki (Finland); Singh, P; Shepard, P F [Dept. of Physics and Astronomy, Univ. Pittsburgh, PA (United States)

1993-04-01

Surface radiation damage in planar processed silicon detectors is caused by radiation generated holes being trapped in the silicon dioxide layers on the detector wafer. We have studied charge trapping in thick (field) oxide layers on detector wafers by irradiating FOXFET biased strip detectors and MOS test capacitors. Special emphasis was put on studying how a negative bias voltage across the oxide during irradiation affects hole trapping. In addition to FOXFET biased detectors, negatively biased field oxide layers may exist on the n-side of double-sided strip detectors with field plate based n-strip separation. The results indicate that charge trapping occurred both close to the Si-SiO[sub 2] interface and in the bulk of the oxide. The charge trapped in the bulk was found to modify the electric field in the oxide in a way that leads to saturation in the amount of charge trapped in the bulk when the flatband/threshold voltage shift equals the voltage applied over the oxide during irradiation. After irradiation only charge trapped close to the interface is annealed by electrons tunneling to the oxide from the n-type bulk. (orig.).

Technologies for Trapped-Ion Quantum Information Systems

Science.gov (United States)

2016-03-21

we discuss work aiming to leverage a commer- cial CMOS (complementary metal-oxide- semiconductor ) process to develop an integrated ion trap architecture...this integration: alignment of optical elements with tiny modes to point emitters, and trap- ping charged particles close to dielectric surfaces. Inte...far by heating in several ways. The deep optical potentials required to confine a charged particle against stray fields impart significant recoil

Atomic physics of highly charged ions in an electron beam ion trap

International Nuclear Information System (INIS)

Marrs, R.E.

1990-07-01

Two electron beam ion traps are in use at LLNL for the purpose of studying the properties of very highly charged ions and their interactions with electrons. This paper reviews the operation of the traps and discusses recent experiments in three areas: precision transition energy measurements in the limit of very high ion charge, dielectronic recombination measurements for the He-like isoelectronic sequence, and measurements of x-ray polarization. 22 refs., 11 figs., 1 tab

Geometric component of charge pumping current in nMOSFETs due to low-temperature irradiation

Science.gov (United States)

Witczak, S. C.; King, E. E.; Saks, N. S.; Lacoe, R. C.; Shaneyfelt, M. R.; Hash, G. L.; Hjalmarson, H. P.; Mayer, D. C.

2002-12-01

The geometric component of charge pumping current was examined in n-channel metal-oxide-silicon field effect transistors (MOSFETs) following low-temperature irradiation. In addition to the usual dependencies on channel length and gate bias transition time, the geometric component was found to increase with radiation-induced oxide-trapped charge density and decreasing temperature. A postirradiation injection of electrons into the gate oxide reduces the geometric component along with the density of oxide-trapped charge, which clearly demonstrates that the two are correlated. A fit of the injection data to a first-order model for trapping kinetics indicates that the electron trapping occurs predominantly at a single type of Coulomb-attractive trap site. The geometric component results primarily from the bulk recombination of channel electrons that fail to transport to the source or drain during the transition from inversion to accumulation. The radiation response of these transistors suggests that Coulomb scattering by oxide-trapped charge increases the bulk recombination at low temperatures by impeding electron transport. These results imply that the geometric component must be properly accounted for when charge pumping irradiated n-channel MOSFETs at low temperatures.

Charge transport model in nanodielectric composites based on quantum tunneling mechanism and dual-level traps

Energy Technology Data Exchange (ETDEWEB)

Li, Guochang; Chen, George, E-mail: gc@ecs.soton.ac.uk, E-mail: sli@mail.xjtu.edu.cn [State Key Laboratory of Electrical Insulation and Power Equipment, Xi' an Jiaotong University, Xi' an 710049 (China); School of Electronic and Computer Science, University of Southampton, Southampton SO17 1BJ (United Kingdom); Li, Shengtao, E-mail: gc@ecs.soton.ac.uk, E-mail: sli@mail.xjtu.edu.cn [State Key Laboratory of Electrical Insulation and Power Equipment, Xi' an Jiaotong University, Xi' an 710049 (China)

2016-08-08

Charge transport properties in nanodielectrics present different tendencies for different loading concentrations. The exact mechanisms that are responsible for charge transport in nanodielectrics are not detailed, especially for high loading concentration. A charge transport model in nanodielectrics has been proposed based on quantum tunneling mechanism and dual-level traps. In the model, the thermally assisted hopping (TAH) process for the shallow traps and the tunnelling process for the deep traps are considered. For different loading concentrations, the dominant charge transport mechanisms are different. The quantum tunneling mechanism plays a major role in determining the charge conduction in nanodielectrics with high loading concentrations. While for low loading concentrations, the thermal hopping mechanism will dominate the charge conduction process. The model can explain the observed conductivity property in nanodielectrics with different loading concentrations.

Field effect of fixed negative charges on oxidized silicon induced by AlF3 layers with fluorine deficiency

International Nuclear Information System (INIS)

Koenig, D.; Zahn, D.R.T.; Ebest, G.

2004-01-01

We recently discovered that in an AlF 3 /SiO 2 /Si structure extrinsic electrons are trapped at fluorine (F) vacancies in AlF 3 at the interface with SiO 2 , generating a high sheet density of fixed negative charges. p- and n-Type Si substrates were oxidized using rapid thermal oxidation (RTO) or furnace oxidation (th); some samples were passivated in hydrogen (H 2 ). AlF 3 was deposited onto oxidized Si wafers by a modified PVD process, leading to a F deficiency (AlF x ). Samples were characterized by mercury probe (Hg) CV and microwave photo conduction decay (μW-PCD), determining charge and trap densities and effective carrier lifetime τ eff , respectively. An effective charge density of up to |Q eff = -6.9 x 10 12 cm -2 is reached due to electrons tunneling from Si into AlF 3 , occupying F vacancies. Lifetime scans of p-type float zone (FZ) Si samples with 1.5 nm RTO and 20 nm AlF 3 show an increase in effective minority carrier lifetime by a factor of 8.4 compared to samples with 1.5 nm RTO only. The fixed negative charge density increases with exposure time to sunlight or at simulated ageing by a 24 h anneal at 200 deg. C in air

Interface charge trapping induced flatband voltage shift during plasma-enhanced atomic layer deposition in through silicon via

Science.gov (United States)

Li, Yunlong; Suhard, Samuel; Van Huylenbroeck, Stefaan; Meersschaut, Johan; Van Besien, Els; Stucchi, Michele; Croes, Kristof; Beyer, Gerald; Beyne, Eric

2017-12-01

A Through Silicon Via (TSV) is a key component for 3D integrated circuit stacking technology, and the diameter of a TSV keeps scaling down to reduce the footprint in silicon. The TSV aspect ratio, defined as the TSV depth/diameter, tends to increase consequently. Starting from the aspect ratio of 10, to improve the TSV sidewall coverage and reduce the process thermal budget, the TSV dielectric liner deposition process has evolved from sub-atmospheric chemical vapour deposition to plasma-enhanced atomic layer deposition (PE-ALD). However, with this change, a strong negative shift in the flatband voltage is observed in the capacitance-voltage characteristic of the vertical metal-oxide-semiconductor (MOS) parasitic capacitor formed between the TSV copper metal and the p-Si substrate. And, no shift is present in planar MOS capacitors manufactured with the same PE-ALD oxide. By comparing the integration process of these two MOS capacitor structures, and by using Elastic Recoil Detection to study the elemental composition of our films, it is found that the origin of the negative flatband voltage shift is the positive charge trapping at the Si/SiO2 interface, due to the positive PE-ALD reactants confined to the narrow cavity of high aspect ratio TSVs. This interface charge trapping effect can be effectively mitigated by high temperature annealing. However, this is limited in the real process due to the high thermal budget. Further investigation on liner oxide process optimization is needed.

Confinement in a cryogenic Penning trap of highest charge state ions from EBIT

International Nuclear Information System (INIS)

Schneider, D.

1994-01-01

The retrapping of highly charged Xe 44+ and Th 68+,72+ ions extracted from an open-quotes Electron Beam Ion Trapclose quotes (EBIT) is demonstrated after injection of the ions into RETRAP, a cryogenic Penning trap (up to 6 Tesla magnetic field) currently with an open cylinder design. Ion extraction in a short pulse (5-20 μsec) from EBIT, essential for efficient retrapping, is employed. The ions are slowed down upon entering a deceleration tube mounted above the trap within the magnetic field. The potential is then rapidly (100 ns) decreased, enabling low energy ions to enter the trap. Capture efficiencies up to 25% are observed via detection of the delayed ion release pulse with a detector below the trap. Signal voltages induced in a tuned circuit due to single and multiple ions have been observed by tuning the ion resonant axial oscillation frequencies for different ions. Results from transporting and retrapping of the ions, as well as their detection, are described and the trapping efficiency is discussed, The motivation for these studies is to cool the trapped very highly charged ions to low temperatures (< 4 K) in order to perform ultrahigh resolution precision spectroscopy, collision studies at ultra low energies and to observe phase transitions in Coulomb clusters of highly charged ions

New Method for Shallow and Deep Trap Distribution Analysis in Oil Impregnated Insulation Paper Based on the Space Charge Detrapping

Directory of Open Access Journals (Sweden)

Jian Hao

2018-01-01

Full Text Available Space charge has close relation with the trap distribution in the insulation material. The phenomenon of charges trapping and detrapping has attracted significant attention in recent years. Space charge and trap parameters are effective parameters for assessing the ageing condition of the insulation material qualitatively. In this paper, a new method for calculating trap distribution based on the double exponential fitting analysis of charge decay process and its application on characterizing the trap distribution of oil impregnated insulation paper was investigated. When compared with the common first order exponential fitting analysis method, the improved dual-level trap method could obtain the energy level range and density of both shallow traps and deep traps, simultaneously. Space charge decay process analysis of the insulation paper immersed with new oil and aged oil shows that the improved trap distribution calculation method can distinguish the physical defects and chemical defects. The trap density shows an increasing trend with the oil ageing, especially for the deep traps mainly related to chemical defects. The greater the energy could be filled by the traps, the larger amount of charges could be trapped, especially under higher electric field strength. The deep trap energy level and trap density could be used to characterize ageing. When one evaluates the ageing condition of oil-paper insulation using trap distribution parameters, the influence of oil performance should not be ignored.

A Study of the Charge Trap Transistor (CTT) for Post-Fab Modification of Wafers

Science.gov (United States)

2018-04-01

AFRL-RY-WP-TR-2018-0030 A STUDY OF THE CHARGE TRAP TRANSISTOR (CTT) FOR POST- FAB MODIFICATION OF WAFERS Subramanian S. Iyer University of California...Final 13 June 2016 – 13 December 2017 4. TITLE AND SUBTITLE A STUDY OF THE CHARGE TRAP TRANSISTOR (CTT) FOR POST- FAB MODIFICATION OF WAFERS 5a. CONTRACT

Two-dimensional analytical model of double-gate tunnel FETs with interface trapped charges including effects of channel mobile charge carriers

Science.gov (United States)

Xu, Huifang; Dai, Yuehua

2017-02-01

A two-dimensional analytical model of double-gate (DG) tunneling field-effect transistors (TFETs) with interface trapped charges is proposed in this paper. The influence of the channel mobile charges on the potential profile is also taken into account in order to improve the accuracy of the models. On the basis of potential profile, the electric field is derived and the expression for the drain current is obtained by integrating the BTBT generation rate. The model can be used to study the impact of interface trapped charges on the surface potential, the shortest tunneling length, the drain current and the threshold voltage for varying interface trapped charge densities, length of damaged region as well as the structural parameters of the DG TFET and can also be utilized to design the charge trapped memory devices based on TFET. The biggest advantage of this model is that it is more accurate, and in its expression there are no fitting parameters with small calculating amount. Very good agreements for both the potential, drain current and threshold voltage are observed between the model calculations and the simulated results. Project supported by the National Natural Science Foundation of China (No. 61376106), the University Natural Science Research Key Project of Anhui Province (No. KJ2016A169), and the Introduced Talents Project of Anhui Science and Technology University.

Enhanced memory performance by tailoring the microstructural evolution of (ZrO{sub 2}){sub 0.6}(SiO{sub 2}){sub 0.4} charge trapping layer in the nanocrystallites-based charge trap flash memory cells

Energy Technology Data Exchange (ETDEWEB)

Tang, Zhenjie; Xu, Hanni; Xia, Yidong; Yin, Jiang; Li, Aidong; Liu, Zhiguo [Nanjing University, Department of Materials Science and Engineering and National Laboratory of Solid State Microstructures, Nanjing (China); Zhu, Xinhua [Nanjing University, Department of Physics and National and Laboratory of Solid State Microstructures, Nanjing (China); Yan, Feng [Nanjing University, School of Electronics Science and Engineering, Nanjing (China)

2012-07-15

ZrO{sub 2} nanocrystallites based charge trap memory cells by incorporating a (ZrO{sub 2}){sub 0.6}(SiO{sub 2}){sub 0.4} film as a charge trapping layer and amorphous Al{sub 2}O{sub 3} as tunneling and blocking layer were prepared and investigated. The precipitation reaction in charge trapping layer forming ZrO{sub 2} nanocrystallites during rapid thermal annealing was investigated by transmission electron microscopy. The density and size of ZrO{sub 2} nanocrystallites are the critical factors for controlling the charge storage characteristics. The ZrO{sub 2} nanocrystallites based memory cells after postannealing at 800 C for 60 s exhibit the best electrical characteristics and a low charge loss {proportional_to}5 % after 10{sup 5} write/erase cycles operation. (orig.)

Trapping, self-trapping and the polaron family

International Nuclear Information System (INIS)

Stoneham, A M; Gavartin, J; Shluger, A L; Kimmel, A V; Ramo, D Munoz; Roennow, H M; Aeppli, G; Renner, C

2007-01-01

The earliest ideas of the polaron recognized that the coupling of an electron to ionic vibrations would affect its apparent mass and could effectively immobilize the carrier (self-trapping). We discuss how these basic ideas have been generalized to recognize new materials and new phenomena. First, there is an interplay between self-trapping and trapping associated with defects or with fluctuations in an amorphous solid. In high dielectric constant oxides, like HfO 2 , this leads to oxygen vacancies having as many as five charge states. In colossal magnetoresistance manganites, this interplay makes possible the scanning tunnelling microscopy (STM) observation of polarons. Second, excitons can self-trap and, by doing so, localize energy in ways that can modify the material properties. Third, new materials introduce new features, with polaron-related ideas emerging for uranium dioxide, gate dielectric oxides, Jahn-Teller systems, semiconducting polymers and biological systems. The phonon modes that initiate self-trapping can be quite different from the longitudinal optic modes usually assumed to dominate. Fourth, there are new phenomena, like possible magnetism in simple oxides, or with the evolution of short-lived polarons, like muons or excitons. The central idea remains that of a particle whose properties are modified by polarizing or deforming its host solid, sometimes profoundly. However, some of the simpler standard assumptions can give a limited, indeed misleading, description of real systems, with qualitative inconsistencies. We discuss representative cases for which theory and experiment can be compared in detail

Effects of vacuum ultraviolet irradiation on trapped charges and leakage currents of low-k organosilicate dielectrics

Energy Technology Data Exchange (ETDEWEB)

Zheng, H.; Guo, X.; Pei, D.; Shohet, J. L. [Plasma Processing and Technology Laboratory and Department of Electrical and Computer Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706 (United States); Ryan, E. T. [GLOBALFOUNDRIES, Albany, New York 12203 (United States); Nishi, Y. [Stanford University, Stanford, California 94305 (United States)

2015-05-11

Vacuum ultraviolet (VUV) photoemission spectroscopy is utilized to investigate the distribution of trapped charges within the bandgap of low dielectric constant (low-k) organosilicate (SiCOH) materials. It was found that trapped charges are continuously distributed within the bandgap of porous SiCOH and the center of the trapped states is 1.3 eV above the valence band of the tested sample. By comparing photoemission spectroscopic results before and after VUV exposure, VUV irradiation with photon energies between 7.6 and 8.9 eV was found to deplete trapped charge while UV exposure with photon energies less than 6.0 eV induces more trapped charges in tested samples. Current-Voltage (IV) characteristics results show that the reliability of dielectrics is improved after VUV irradiation with photon energies between 7.6 and 8.9 eV, while UV exposure results in an increased level of leakage current and a decreased breakdown voltage, both of which are harmful to the reliability of the dielectric. This work shows that VUV irradiation holds the potential to substitute for UV curing in microelectronic processing to improve the reliability of low-k dielectrics by mitigating the leakage currents and trapped charges induced by UV irradiation.

The nonlinear dustgrain-charging on large amplitude electrostatic waves in a dusty plasma with trapped ions

Directory of Open Access Journals (Sweden)

Y.-N. Nejoh

1998-01-01

Full Text Available The nonlinear dustgrain-charging and the influence of the ion density and temperature on electrostatic waves in a dusty plasma having trapped ions are investigated by numerical calculation. This work is the first approach to the effect of trapped ions in dusty plasmas. The nonlinear variation of the dust-charge is examined, and it is shown that the characteristics of the dustcharge number sensitively depend on the plasma potential, Mach number, dust mass-to-charge ratio, trapped ion density and temperature. The fast and slow wave modes are shown in this system. An increase of the ion temperature decreases the dust-charging rate and the propagation speed of ion waves. It is found that the existence of electrostatic ion waves sensitively depends on the ion to electron density ratio. New findings of the variable-charge dust grain particles, ion density and temperature in a dusty plasma with trapped ions are predicted.

MOS Capacitance—Voltage Characteristics III. Trapping Capacitance from 2-Charge-State Impurities

International Nuclear Information System (INIS)

Jie Binbin; Sah Chihtang

2011-01-01

Low-frequency and high-frequency capacitance—voltage curves of Metal—Oxide—Semiconductor Capacitors are presented to illustrate giant electron and hole trapping capacitances at many simultaneously present two-charge-state and one-trapped-carrier, or one-energy-level impurity species. Models described include a donor electron trap and an acceptor hole trap, both donors, both acceptors, both shallow energy levels, both deep, one shallow and one deep, and the identical donor and acceptor. Device and material parameters are selected to simulate chemically and physically realizable capacitors for fundamental trapping parameter characterizations and for electrical and optical signal processing applications. (invited papers)

Cold highly charged ions in a cryogenic Paul trap

Energy Technology Data Exchange (ETDEWEB)

Versolato, O. O., E-mail: oscar.versolato@mpi-hd.mpg.de; Schwarz, M.; Windberger, A.; Ullrich, J. [Max-Planck-Institut fuer Kernphysik (Germany); Schmidt, P. O. [Physikalisch-Technische Bundesanstalt (Germany); Drewsen, M. [University of Aarhus, Department of Physics and Astronomy (Denmark); Crespo Lopez-Urrutia, J. R. [Max-Planck-Institut fuer Kernphysik (Germany)

2013-03-15

Narrow optical transitions in highly charged ions (HCIs) are of particular interest for metrology and fundamental physics, exploiting the high sensitivity of HCIs to new physics. The highest sensitivity for a changing fine structure constant ever predicted for a stable atomic system is found in Ir{sup 17 + }. However, laser spectroscopy of HCIs is hindered by the large ({approx} 10{sup 6} K) temperatures at which they are produced and trapped. An unprecedented improvement in such laser spectroscopy can be obtained when HCIs are cooled down to the mK range in a linear Paul trap. We have developed a cryogenic linear Paul trap in which HCIs will be sympathetically cooled by {sup 9}Be{sup + } ions. Optimized optical access for laser light is provided while maintaining excellent UHV conditions. The Paul trap will be connected to an electron beam ion trap (EBIT) which is able to produce a wide range of HCIs. This EBIT will also provide the first experimental input needed for the determination of the transition energies in Ir{sup 17 + }, enabling further laser-spectroscopic investigations of this promising HCI.

Operation mode switchable charge-trap memory based on few-layer MoS2

Science.gov (United States)

Hou, Xiang; Yan, Xiao; Liu, Chunsen; Ding, Shijin; Zhang, David Wei; Zhou, Peng

2018-03-01

Ultrathin layered two-dimensional (2D) semiconductors like MoS2 and WSe2 have received a lot of attention because of their excellent electrical properties and potential applications in electronic devices. We demonstrate a charge-trap memory with two different tunable operation modes based on a few-layer MoS2 channel and an Al2O3/HfO2/Al2O3 charge storage stack. Our device shows excellent memory properties under the traditional three-terminal operation mode. More importantly, unlike conventional charge-trap devices, this device can also realize the memory performance with just two terminals (drain and source) because of the unique atomic crystal electrical characteristics. Under the two-terminal operation mode, the erase/program current ratio can reach up to 104 with a stable retention property. Our study indicates that the conventional charge-trap memory cell can also realize the memory performance without the gate terminal based on novel two dimensional materials, which is meaningful for low power consumption and high integration density applications.

Traps in Zirconium Alloys Oxide Layers

Directory of Open Access Journals (Sweden)

Helmar Frank

2005-01-01

Full Text Available Oxide films long-time grown on tubes of three types of zirconium alloys in water and in steam were investigated, by analysing I-V characteristic measured at constant voltages with various temperatures. Using theoretical concepts of Rose [3] and Gould [5], ZryNbSn(Fe proved to have an exponential distribution of trapping centers below the conduction band edge, wheras Zr1Nb and IMP Zry-4 proved to have single energy trap levels.

Analysis of Conduction and Charging Mechanisms in Atomic Layer Deposited Multilayered HfO2/Al2O3 Stacks for Use in Charge Trapping Flash Memories

Directory of Open Access Journals (Sweden)

Nenad Novkovski

2018-01-01

Full Text Available Method for characterization of electrical and trapping properties of multilayered high permittivity stacks for use in charge trapping flash memories is proposed. Application of the method to the case of multilayered HfO2/Al2O3 stacks is presented. By applying our previously developed comprehensive model for MOS structures containing high-κ dielectrics on the J-V characteristics measured in the voltage range without marked degradation and charge trapping (from −3 V to +3 V, several parameters of the structure connected to the interfacial layer and the conduction mechanisms have been extracted. We found that the above analysis gives precise information on the main characteristics and the quality of the injection layer. C-V characteristics of stressed (with write and erase pulses structures recorded in a limited range of voltages between −1 V and +1 V (where neither significant charge trapping nor visible degradation of the structures is expected to occur were used in order to provide measures of the effect of stresses with no influence of the measurement process. Both trapped charge and the distribution of interface states have been determined using modified Terman method for fresh structures and for structures stressed with write and erase cycles. The proposed method allows determination of charge trapping and interface state with high resolution, promising a precise characterization of multilayered high permittivity stacks for use in charge trapping flash memories.

Time-dependence hole and electron trapping effects in SIMOX buried oxides

International Nuclear Information System (INIS)

Boesch, H.E. Jr.; Taylor, T.L.; Hite, L.R.; Bailey, W.E.

1990-01-01

Back-channel threshold shift associated with the buried oxide layers of separation by implanted oxygen (SIMOX) and zone-melted recrystallization (ZMR) field-effect transistors (FETs) was measured following pulsed irradiation as a function of temperature and back-gate bias using a fast time-resolved I-V measurement technique. The SIMOX FETs showed large initial negative voltage shifts at 0.2 ms after irradiation followed by temperature- and bias-dependent additional negative shifts to 800s. Analysis and modeling of the results indicate efficient deep trapping of radiation-generated holes in the bulk of the oxide, substantial initial trapping of radiation-generated electrons in the oxide, and rapid removal of the trapped electrons by a thermal detrapping process. The ZMR FETs showed evidence of substantial trapping of holes alone in the oxide bulk

Particle trapping by nonlinear resonances and space charge

International Nuclear Information System (INIS)

Franchetti, G.; Hofmann, I.

2006-01-01

In the FAIR [C.D.R. http://www.gsi.de/GSI Future/cdr/] facility planned at GSI high space charge effects and nonlinear dynamics may play an important role for limiting nominal machine performance. The most relevant interplay of these two effects on the single particle dynamics has been proposed in terms of trapping of particles into stable islands [G. Franchetti, I. Hofmann, AIP Conf. Proc. 642 (2002) 260]. Subsequent numerical studies and dedicated experiments have followed [G. Franchetti et al., Phys. Rev. ST Accel. Beams 6 (2003) 124201; G. Franchetti et al., AIP Conf. Proc. 773 (2005) 137]. We present here the effect of the chromaticity on the mechanisms of halo formation induced by particle trapping into resonances

Dynamics of charge carrier trapping in NO 2 sensors based on ZnO field-effect transistors

NARCIS (Netherlands)

Andringa, A.-M.; Vlietstra, N.; Smits, E.C.P.; Spijkman, M.-J.; Gomes, H.L.; Klootwijk, J.H.; Blom, P.W.M.; Leeuw, D.M. de

2012-01-01

Nitrogen dioxide (NO 2) detection with ZnO field-effect transistors is based on charge carrier trapping. Here we investigate the dynamics of charge trapping and recovery as a function of temperature by monitoring the threshold voltage shift. The threshold voltage shifts follow a

DIRECT TUNNELLING AND MOSFET BORDER TRAPS

Directory of Open Access Journals (Sweden)

Vladimir Drach

2015-09-01

Full Text Available The border traps, in particular slow border traps, are being investigated in metal-oxide-semiconductor structures, utilizing n-channel MOSFET as a test sample. The industrial process technology of test samples manufacturing is described. The automated experimental setup is discussed, the implementation of the experimental setup had made it possible to complete the entire set of measurements. The schematic diagram of automated experimental setup is shown. The charging time characteristic of the ID-VG shift reveals that the charging process is a direct tunnelling process and highly bias dependent.

Highly charged ions trapping for lifetime measurements; Piegeage d'ions tres charges pour la mesure de duree de vie d'etats metastables

Energy Technology Data Exchange (ETDEWEB)

Attia, D

2007-10-15

A new experimental setup dedicated to highly charged ion trapping is presented in this work. The final goal is to perform lifetime measurement of metastable states produced by our ECR (Electron Cyclotron Resonance) ion source. Lifetimes to be measured are in the range of a few ms and more. We have measured the lifetimes of the M1 transitions of the metastable states of Ar{sup 9+}, Ar{sup 13+} and Ar{sup 14+}. These measurements are useful to test the N-body problem in the relativistic range. The trap we have built, was designed a few years ago at the Weizman Institute in Israel, it allows ions with an energy of several keV to be trapped for lifetimes of about 1 second. This trap was originally designed to study the dynamics of excited molecules. We have shown for the first time how the trap operates and that it can operate with highly charged ions. We have studied the beam dynamics of highly charged ions and the trap has been tested with various species of ions and different charge states: from O{sup +} to O{sup 6+}, from Ar{sup 8+} to Ar{sup 13+}, and from Kr{sup 13+} to Kr{sup 20+}.

Charge trapping of Ge-nanocrystals embedded in TaZrOx dielectric films

International Nuclear Information System (INIS)

Lehninger, D.; Seidel, P.; Geyer, M.; Schneider, F.; Heitmann, J.; Klemm, V.; Rafaja, D.; Borany, J. von

2015-01-01

Ge-nanocrystals (NCs) were synthesized in amorphous TaZrO x by thermal annealing of co-sputtered Ge-TaZrO x layers. Formation of spherical shaped Ge-NCs with small variation of size, areal density, and depth distribution was confirmed by high-resolution transmission electron microscopy. The charge storage characteristics of the Ge-NCs were investigated by capacitance-voltage and constant-capacity measurements using metal-insulator-semiconductor structures. Samples with Ge-NCs exhibit a maximum memory window of 5 V by sweeping the bias voltage from −7 V to 7 V and back. Below this maximum, the width of the memory window can be controlled by the bias voltage. The fitted slope of the memory window versus bias voltage characteristics is very close to 1 for samples with one layer Ge-NCs. A second layer Ge-NCs does not result in a second flat stair in the memory window characteristics. Constant-capacity measurements indicate charge storage in trapping centers at the interfaces between the Ge-NCs and the surrounding materials (amorphous matrix/tunneling oxide). Charge loss occurs by thermal detrapping and subsequent band-to-band tunneling. Reference samples without Ge-NCs do not show any memory window

Charge trapping characteristics of Au nanocrystals embedded in remote plasma atomic layer-deposited Al2O3 film as the tunnel and blocking oxides for nonvolatile memory applications

International Nuclear Information System (INIS)

Lee, Jaesang; Kim, Hyungchul; Park, Taeyong; Ko, Youngbin; Ryu, Jaehun; Jeon, Heeyoung; Park, Jingyu; Jeon, Hyeongtag

2012-01-01

Remote plasma atomic layer deposited (RPALD) Al 2 O 3 films were investigated to apply as tunnel and blocking layers in the metal-oxide-semiconductor capacitor memory utilizing Au nanocrystals (NCs) for nonvolatile memory applications. The interface stability of an Al 2 O 3 film deposited by RPALD was studied to observe the effects of remote plasma on the interface. The interface formed during RPALD process has high oxidation states such as Si +3 and Si +4 , indicating that RPALD process can grow more stable interface which has a small amount of fixed oxide trap charge. The significant memory characteristics were also observed in this memory device through the electrical measurement. The memory device exhibited a relatively large memory window of 5.6 V under a 10/-10 V program/erase voltage and also showed the relatively fast programming/erasing speed and a competitive retention characteristic after 10 4 s. These results indicate that Al 2 O 3 films deposited via RPALD can be applied as the tunnel and blocking oxides for next-generation flash memory devices.

Radiation induced leakage due to stochastic charge trapping in isolation layers of nanoscale MOSFETs

Science.gov (United States)

Zebrev, G. I.; Gorbunov, M. S.; Pershenkov, V. S.

2008-03-01

The sensitivity of sub-100 nm devices to microdose effects, which can be considered as intermediate case between cumulative total dose and single event errors, is investigated. A detailed study of radiation-induced leakage due to stochastic charge trapping in irradiated planar and nonplanar devices is developed. The influence of High-K insulators on nanoscale ICs reliability is discussed. Low critical values of trapped charge demonstrate a high sensitivity to single event effect.

Photo-excited charge collection spectroscopy probing the traps in field-effect transistors

CERN Document Server

Im, Seongil; Kim, Jae Hoon

2013-01-01

Solid state field-effect devices such as organic and inorganic-channel thin-film transistors (TFTs) have been expected to promote advances in display and sensor electronics. The operational stabilities of such TFTs are thus important, strongly depending on the nature and density of charge traps present at the channel/dielectric interface or in the thin-film channel itself. This book contains how to characterize these traps, starting from the device physics of field-effect transistor (FET). Unlike conventional analysis techniques which are away from well-resolving spectral results, newly-introduced photo-excited charge-collection spectroscopy (PECCS) utilizes the photo-induced threshold voltage response from any type of working transistor devices with organic-, inorganic-, and even nano-channels, directly probing on the traps. So, our technique PECCS has been discussed through more than ten refereed-journal papers in the fields of device electronics, applied physics, applied chemistry, nano-devices and materia...

Microscopic studies of the fate of charges in organic semiconductors: Scanning Kelvin probe measurements of charge trapping, transport, and electric fields in p- and n-type devices

Science.gov (United States)

Smieska, Louisa Marion

Organic semiconductors could have wide-ranging applications in lightweight, efficient electronic circuits. However, several fundamental questions regarding organic electronic device behavior have not yet been fully addressed, including the nature of chemical charge traps, and robust models for injection and transport. Many studies focus on engineering devices through bulk transport measurements, but it is not always possible to infer the microscopic behavior leading to the observed measurements. In this thesis, we present scanning-probe microscope studies of organic semiconductor devices in an effort to connect local properties with local device behavior. First, we study the chemistry of charge trapping in pentacene transistors. Working devices are doped with known pentacene impurities and the extent of charge trap formation is mapped across the transistor channel. Trap-clearing spectroscopy is employed to measure an excitation of the pentacene charge trap species, enabling identification of the degradationrelated chemical trap in pentacene. Second, we examine transport and trapping in peryelene diimide (PDI) transistors. Local mobilities are extracted from surface potential profiles across a transistor channel, and charge injection kinetics are found to be highly sensitive to electrode cleanliness. Trap-clearing spectra generally resemble PDI absorption spectra, but one derivative yields evidence indicating variation in trap-clearing mechanisms for different surface chemistries. Trap formation rates are measured and found to be independent of surface chemistry, contradicting a proposed silanol trapping mechanism. Finally, we develop a variation of scanning Kelvin probe microscopy that enables measurement of electric fields through a position modulation. This method avoids taking a numeric derivative of potential, which can introduce high-frequency noise into the electric field signal. Preliminary data is presented, and the theoretical basis for electric field

Ion trapping in one-minimum potentials via charge-exchange collisions

International Nuclear Information System (INIS)

Maier, H.; Kuhn, S.

1994-01-01

A (1 d, 2 v), electrostatic, kinetics model for time-independent single-ended Q-machine states with a positively biased cold plate and a single internal minimum near the hot plate is presented. While the electrons are treated as collisionless, charge-exchange collisions between the ions and the neutral background gas atoms are taken into account by means of a linearized Boltzmann collision operator. The self-consistent plasma states are found by using an iterative analytic-numerical trajectory-simulation method in which the charge-density and potential distributions are alternately determined numerical results clearly demonstrate the sensitive role that trapped ions play in shaping the microscopic and macroscopic properties of the dc states under study. The trapped-ion distributions themselves are shown to be controlled critically by the detailed scattering conditions, which in turn are determined by the choice of the background properties. (author). 10 refs, 3 figs

A charged-particle manipulator utilizing a co-axial tube electrodynamic trap with an integrated camera

International Nuclear Information System (INIS)

Jiang, L; Pau, S; Whitten, W B

2011-01-01

A charged-particle manipulator was designed and fabricated with an integrated imaging camera allowing real-time in-situ monitoring of trapped particle motion even when the trap device is under motion or rotation. The trap device was made of two co-axial electrically conductive tubes with diameters of 5.5 mm and 7 mm for the inner tube and outer tube, respectively; the imaging camera with its optical fiber bundle was integrated within the tubular trap device to realize a single instrument functioning as a manipulator. Motion of suspended microparticles of 3 μm to 50 μm in diameter can be monitored using the integrated camera regardless of the trap device orientations. This manipulator provides capability of controlled manipulation of trapped particles by tuning the operating conditions while monitoring the feedback of real-time particle motion. Imaging of suspended particles was not interrupted while the manipulator was translated and/or rotated. This integrated manipulator can be used for charged particle transport and repositioning.

Charge trapping and de-trapping in isolated CdSe/ZnS nanocrystals under an external electric field: indirect evidence for a permanent dipole moment.

Science.gov (United States)

Zang, Huidong; Cristea, Mihail; Shen, Xuan; Liu, Mingzhao; Camino, Fernando; Cotlet, Mircea

2015-09-28

Single nanoparticle studies of charge trapping and de-trapping in core/shell CdSe/ZnS nanocrystals incorporated into an insulating matrix and subjected to an external electric field demonstrate the ability to reversibly modulate the exciton dynamics and photoluminescence blinking while providing indirect evidence for the existence of a permanent ground state dipole moment in such nanocrystals. A model assuming the presence of energetically deep charge traps physically aligned along the direction of the permanent dipole is proposed in order to explain the dynamics of nanocrystal blinking in the presence of a permanent dipole moment.

Thermoluminescence study of the trapped charge at an alumina surface electrode in different dielectric barrier discharge regimes

Energy Technology Data Exchange (ETDEWEB)

Ambrico, P F; Ambrico, M; Dilecce, G; De Benedictis, S [Consiglio Nazionale delle Ricerche, Istituto di Metodologie Inorganiche e dei Plasmi UOS Bari-c/o Dipartimento di Chimica, Universita degli Studi di Bari ' Aldo Moro' , via Orabona, 4, 70126 Bari (Italy); Colaianni, A [Dipartimento di Geologia e Geofisica, Universita degli Studi di Bari ' Aldo Moro' , via Orabona, 4, 70126 Bari (Italy); Schiavulli, L, E-mail: paolofrancesco.ambrico@cnr.i [Dipartimento Interateneo di Fisica, Universita degli Studi di Bari ' Aldo Moro' , via Orabona, 4, 70126 Bari (Italy)

2010-08-18

In this study, the charge trapping effect in alumina dielectric surfaces has been deeply investigated by means of a dedicated dielectric barrier discharge apparatus in different discharge regimes and gas mixtures. This work further validates our previous findings in the case of air discharges in a filamentary regime. Long lasting charge trapping has been evidenced by ex situ thermoluminescence characterizations of alumina dielectric barrier plates exposed to a plasma. The density of trapped surface charges was found to be higher in the glow discharge with respect to pseudo-glow and filamentary regimes, and for all regimes the minimum trap activation temperature was 390 K and the trap energy was less than or around 1 eV. This implies that in the case of glow discharges a higher reservoir of electrons is present. Also, the effect was found to persist for several days after running the discharge.

Thermoluminescence study of the trapped charge at an alumina surface electrode in different dielectric barrier discharge regimes

International Nuclear Information System (INIS)

Ambrico, P F; Ambrico, M; Dilecce, G; De Benedictis, S; Colaianni, A; Schiavulli, L

2010-01-01

In this study, the charge trapping effect in alumina dielectric surfaces has been deeply investigated by means of a dedicated dielectric barrier discharge apparatus in different discharge regimes and gas mixtures. This work further validates our previous findings in the case of air discharges in a filamentary regime. Long lasting charge trapping has been evidenced by ex situ thermoluminescence characterizations of alumina dielectric barrier plates exposed to a plasma. The density of trapped surface charges was found to be higher in the glow discharge with respect to pseudo-glow and filamentary regimes, and for all regimes the minimum trap activation temperature was 390 K and the trap energy was less than or around 1 eV. This implies that in the case of glow discharges a higher reservoir of electrons is present. Also, the effect was found to persist for several days after running the discharge.

Interfacial dynamic surface traps of lead sulfide (PbS) nanocrystals: test-platform for interfacial charge carrier traps at the organic/inorganic functional interface

Science.gov (United States)

Kim, Youngjun; Ko, Hyungduk; Park, Byoungnam

2018-04-01

Nanocrystal (NC) size and ligand dependent dynamic trap formation of lead sulfide (PbS) NCs in contact with an organic semiconductor were investigated using a pentacene/PbS field effect transistor (FET). We used a bilayer pentacene/PbS FET to extract information of the surface traps of PbS NCs at the pentacene/PbS interface through the field effect-induced charge carrier density measurement in the threshold and subthreshold regions. PbS size and ligand dependent trap properties were elucidated by the time domain and threshold voltage measurements in which threshold voltage shift occurs by carrier charging and discharging in the trap states of PbS NCs. The observed threshold voltage shift is interpreted in context of electron trapping through dynamic trap formation associated with PbS NCs. To the best of our knowledge, this is the first demonstration of the presence of interfacial dynamic trap density of PbS NC in contact with an organic semiconductor (pentacene). We found that the dynamic trap density of the PbS NC is size dependent and the carrier residence time in the specific trap sites is more sensitive to NC size variation than to NC ligand exchange. The probing method presented in the study offers a means to investigate the interfacial surface traps at the organic-inorganic hetero-junction, otherwise understanding of the buried surface traps at the functional interface would be elusive.

Ti–Al–O nanocrystal charge trapping memory cells fabricated by atomic layer deposition

International Nuclear Information System (INIS)

Cao, Zheng-Yi; Li, Ai-Dong; Li, Xin; Cao, Yan-Qiang; Wu, Di

2014-01-01

Charge trapping memory cells using Ti–Al–O (TAO) film as charge trapping layer and amorphous Al 2 O 3 as the tunneling and blocking layers were fabricated on Si substrates by atomic layer deposition method. As-deposited TAO films were annealed at 700 °C, 800 °C and 900 °C for 3 min in N 2 with a rapid thermal annealing process to form nanocrystals. High-resolution transmission electron microscopy and X-ray photoelectron spectroscopy were used to characterize the microstructure and band diagram of the heterostructures. The electrical characteristics and charge storage properties of the Al 2 O 3 /TAO/Al 2 O 3 /Si stack structures were also evaluated. Compared to 700 °C and 900 °C samples, the memory cells annealed at 800 °C exhibit better memory performance with larger memory window of 4.8 V at ± 6 V sweeping, higher program/erase speed and excellent endurance. - Highlights: • The charge trapping memory cells were fabricated by atomic layer deposition method. • The anneal temperature plays a key role in forming nanocrystals. • The memory cells annealed at 800 °C exhibit better memory performance. • The band alignment is beneficial to enhance the retention characteristics

Charge transport in dye-sensibilized porous zinc oxide films; Ladungstransport in farbstoffsensibilisierten poroesen Zinkoxidfilmen

Energy Technology Data Exchange (ETDEWEB)

Reemts, J.

2006-05-18

During the last decades, zinc oxide has attracted a lot of attention as an important material in various electrical, chemical, and optical applications. In the present work results are discussed gained from investigations of highly porous electrochemically deposited zinc oxide, which is a promising electrode material both in the area of solar energy conversion and sensor technology. The films were prepared by adding detergents during the electrodeposition process. The detergents have a structure-directing influence during the film deposition and, therefore, on the morphology of the films. The obtained electrodes can easily be sensitized for light or different chemicals by a simple adsorption of different molecules. In the present work I discuss the fundamental charge transport properties of electrochemically deposited zinc oxide films. Temperature-dependent measurements of the current-voltage characteristics are carried out and the spectral response of the photoconductivity is investigated. In order to understand the charge transport properties of this highly porous material, it is necessary to get a deeper insight in the electrode morphology. Therefore, different optical and scanning probe microscopy methods are used to characterize the inner structure of the electrodes. The electrical conductivity of the zinc oxide films can be seen as a thermally activated process, which can be explained by electronic transitions from the valence band of the zinc oxide to two shallow impurity levels. The current-voltage characteristic unveils a nonlinear behavior which can be explained by a space-charge-limited current model with traps distributed in energy. Upon excitation with different wavelengths, the conductivity of the zinc oxide increases already under sub-band gap illumination due to widely distributed trap states within the band gap. The transients of the photoconductivity follow a stretched exponential law with time scales in the range of several hours, either if the

Poling effect of a charge-trapping layer in glass waveguides

DEFF Research Database (Denmark)

Ren, Yitao; Marckmann, Carl Johan; Jacobsen, Rune Shim

2004-01-01

Germanium-doped multi-layer waveguides containing a silicon oxy-nitride layer as a charge trapper are thermally poled in an air environment. Compared to the waveguides without the trapping layer, the induced linear electro-optic coefficient increases more than 20%. A comparable rise in the intern...

Quantitative analysis of charge trapping and classification of sub-gap states in MoS2 TFT by pulse I-V method

Science.gov (United States)

Park, Junghak; Hur, Ji-Hyun; Jeon, Sanghun

2018-04-01

The threshold voltage instabilities and huge hysteresis of MoS2 thin film transistors (TFTs) have raised concerns about their practical applicability in next-generation switching devices. These behaviors are associated with charge trapping, which stems from tunneling to the adjacent trap site, interfacial redox reaction and interface and/or bulk trap states. In this report, we present quantitative analysis on the electron charge trapping mechanism of MoS2 TFT by fast pulse I-V method and the space charge limited current (SCLC) measurement. By adopting the fast pulse I-V method, we were able to obtain effective mobility. In addition, the origin of the trap states was identified by disassembling the sub-gap states into interface trap and bulk trap states by simple extraction analysis. These measurement methods and analyses enable not only quantitative extraction of various traps but also an understanding of the charge transport mechanism in MoS2 TFTs. The fast I-V data and SCLC data obtained under various measurement temperatures and ambient show that electron transport to neighboring trap sites by tunneling is the main charge trapping mechanism in thin-MoS2 TFTs. This implies that interfacial traps account for most of the total sub-gap states while the bulk trap contribution is negligible, at approximately 0.40% and 0.26% in air and vacuum ambient, respectively. Thus, control of the interface trap states is crucial to further improve the performance of devices with thin channels.

Evidence for charge-trapping inducing polymorphic structural-phase transition in pentacene.

Science.gov (United States)

Ando, Masahiko; Kehoe, Tom B; Yoneya, Makoto; Ishii, Hiroyuki; Kawasaki, Masahiro; Duffy, Claudia M; Minakata, Takashi; Phillips, Richard T; Sirringhaus, Henning

2015-01-07

Trapped-charge-induced transformation of pentacene polymorphs is observed by using in situ Raman spectroscopy and molecular dynamics simulations reveal that the charge should be localized in pentacene molecules at the interface with static intermolecular disorder along the long axis. Quantum chemical calculations of the intermolecular transfer integrals suggest the disorder to be large enough to induce Anderson-type localization. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Charging and trapping of macroparticles in near-electrode regions of fluorocarbon plasmas with negative ions

International Nuclear Information System (INIS)

Ostrikov, K.N.; Kumar, S.; Sugai, H.

2001-01-01

Charging and trapping of macroparticles in the near-electrode region of fluorocarbon etching plasmas with negative ions is considered. The equilibrium charge and forces on particles are computed as a function of the local position in the plasma presheath and sheath. The ionic composition of the plasma corresponds to the etching experiments in 2.45 GHz surface-wave sustained and 13.56 MHz inductively coupled C 4 F 8 +Ar plasmas. It is shown that despite negligible negative ion currents collected by the particles, the negative fluorine ions affect the charging and trapping of particulates through modification of the sheath/presheath structure

Theory and application of dual-transistor charge separation analysis

International Nuclear Information System (INIS)

Fleetwood, D.M.; Schwank, J.R.; Winokur, P.S.; Sexton, F.W.; Shaneyfelt, M.R.

1989-01-01

The authors describe a dual-transistor charge separation method to evaluate the radiation response of MOS transistors. This method requires that n- and p-channel transistors with identically processed oxides be irradiated under identical conditions at the same oxide electric fields. Combining features of single-transistor midgap and mobility methods, the authors show how one may determine threshold voltage shifts due to oxide-trapped and interface-trapped charge from standard threshold voltage and mobility measurements. These measurements can be made at currents 2-5 orders of magnitude higher than those required for midgap, subthreshold slope, and charge-pumping methods. The dual-transistor method contains no adjustable parameters, and includes an internal self-consistency check. The accuracy of the method is verified by comparison to midgap, subthreshold slope, and charge-pumping methods for several MOS processes and technologies

Theoretical study of charge trapping levels in silicon nitride using the LDA-1/2 self-energy correction scheme for excited states

International Nuclear Information System (INIS)

Patrocinio, Weslley S.; Ribeiro, Mauro; Fonseca, Leonardo R.C.

2012-01-01

Silicon nitride, with a permittivity mid-way between SiO 2 and common high-k materials such as HfO 2 , is widely used in microelectronics as an insulating layer on top of oxides where it serves as an impurity barrier with the positive side effect of increasing the dielectric constant of the insulator when it is SiO 2 . It is also employed as charge storage in nonvolatile memory devices thanks to its high concentration of charge traps. However, in the case of memories, it is still unclear which defects are responsible for charge trapping and what is the impact of defect concentration on the structural and electronic properties of SiN x . Indeed, for the amorphous phase the band gap was measured in the range 5.1–5.5 eV, with long tails in the density of states penetrating the gap region. It is still not clear which defects are responsible for the tails. On the other hand, the K-center defects have been associated with charge trapping, though its origin is assigned to one Si back bond. To investigate the contribution of defect states to the band edge tails and band gap states, we adopted the β phase of stoichiometric silicon nitride (β-Si 3 N 4 ) as our model material and calculated its electronic properties employing ab initio DFT/LDA simulations with self-energy correction to improve the location of defect states in the SiN x band gap through the correction of the band gap underestimation typical of DFT/LDA. We considered some important defects in SiN x , as the Si anti-site and the N vacancy with H saturation, in two defect concentrations. The location of our calculated defect levels in the band gap correlates well with the available experimental data, offering a structural explanation to the measured band edge tails and charge trapping characteristics.

Charge trapping of Ge-nanocrystals embedded in TaZrO{sub x} dielectric films

Energy Technology Data Exchange (ETDEWEB)

Lehninger, D., E-mail: David.Lehninger@physik.tu-freiberg.de; Seidel, P.; Geyer, M.; Schneider, F.; Heitmann, J. [Institute of Applied Physics, TU Bergakademie Freiberg, D-09596 Freiberg (Germany); Klemm, V.; Rafaja, D. [Institute of Materials Science, TU Bergakademie Freiberg, D-09596 Freiberg (Germany); Borany, J. von [Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, D-01314 Dresden (Germany)

2015-01-12

Ge-nanocrystals (NCs) were synthesized in amorphous TaZrO{sub x} by thermal annealing of co-sputtered Ge-TaZrO{sub x} layers. Formation of spherical shaped Ge-NCs with small variation of size, areal density, and depth distribution was confirmed by high-resolution transmission electron microscopy. The charge storage characteristics of the Ge-NCs were investigated by capacitance-voltage and constant-capacity measurements using metal-insulator-semiconductor structures. Samples with Ge-NCs exhibit a maximum memory window of 5 V by sweeping the bias voltage from −7 V to 7 V and back. Below this maximum, the width of the memory window can be controlled by the bias voltage. The fitted slope of the memory window versus bias voltage characteristics is very close to 1 for samples with one layer Ge-NCs. A second layer Ge-NCs does not result in a second flat stair in the memory window characteristics. Constant-capacity measurements indicate charge storage in trapping centers at the interfaces between the Ge-NCs and the surrounding materials (amorphous matrix/tunneling oxide). Charge loss occurs by thermal detrapping and subsequent band-to-band tunneling. Reference samples without Ge-NCs do not show any memory window.

Charge accumulation in the buried oxide of SOI structures with the bonded Si/SiO2 interface under γ-irradiation: effect of preliminary ion implantation

International Nuclear Information System (INIS)

Naumova, O V; Fomin, B I; Ilnitsky, M A; Popov, V P

2012-01-01

In this study, we examined the effect of preliminary boron or phosphorous implantation on charge accumulation in the buried oxide of SOI-MOSFETs irradiated with γ-rays in the total dose range (D) of 10 5 –5 × 10 7 rad. The buried oxide was obtained by high-temperature thermal oxidation of Si, and it was not subjected to any implantation during the fabrication process of SOI structures. It was found that implantation with boron or phosphorous ions, used in fabrication technologies of SOI-MOSFETs, increases the concentration of precursor traps in the buried oxide of SOI structures. Unlike in the case of boron implantation, phosphorous implantation leads to an increased density of states at the Si/buried SiO 2 interface during subsequent γ-irradiation. In the γ-irradiated SOI-MOSFETs, the accumulated charge density and the density of surface states in the Si/buried oxide layer systems both vary in proportion to k i ln D. The coefficients k i for as-fabricated and ion-implanted Si/buried SiO 2 systems were evaluated. From the data obtained, it was concluded that a low density of precursor hole traps was a factor limiting the positive charge accumulation in the buried oxide of as-fabricated (non-implanted) SOI structures with the bonded Si/buried SiO 2 interface. (paper)

Effect of non-Maxwellian particle trapping and dust grain charging on dust acoustic solitary waves

International Nuclear Information System (INIS)

Rubab, N.; Murtaza, G.; Mushtaq, A.

2006-01-01

The role of adiabatic trapped ions on a small but finite amplitude dust acoustic wave, including the effect of adiabatic dust charge variation, is investigated in an unmagnetized three-component dusty plasma consisting of electrons, ions and massive micron sized negatively charged dust particulates. We have assumed that electrons and ions obey (r,q) velocity distribution while the dust species is treated fluid dynamically. It is found that the dynamics of dust acoustic waves is governed by a modified r dependent Korteweg-de Vries equation. Further, the spectral indices (r,q) affect the charge fluctuation as well as the trapping of electrons and ions and consequently modify the dust acoustic solitary wave

Energy of charged states in the acetanilide crystal: Trapping of charge-transfer states at vacancies as a possible mechanism for optical damage

Science.gov (United States)

Tsiaousis, D.; Munn, R. W.

2004-04-01

Calculations for the acetanilide crystal yield the effective polarizability (16.6 Å3), local electric field tensor, effective dipole moment (5.41 D), and dipole-dipole energy (-12.8 kJ/mol). Fourier-transform techniques are used to calculate the polarization energy P for a single charge in the perfect crystal (-1.16 eV); the charge-dipole energy WD is zero if the crystal carries no bulk dipole moment. Polarization energies for charge-transfer (CT) pairs combine with the Coulomb energy EC to give the screened Coulomb energy Escr; screening is nearly isotropic, with Escr≈EC/2.7. For CT pairs WD reduces to a term δWD arising from the interaction of the charge on each ion with the change in dipole moment on the other ion relative to the neutral molecule. The dipole moments calculated by density-functional theory methods with the B3LYP functional at the 6-311++G** level are 3.62 D for the neutral molecule, changing to 7.13 D and 4.38 D for the anion and cation, relative to the center of mass. Because of the large change in the anion, δWD reaches -0.9 eV and modifies the sequence of CT energies markedly from that of Escr, giving the lowest two CT pairs at -1.98 eV and -1.41 eV. The changes in P and WD near a vacancy are calculated; WD changes for the individual charges because the vacancy removes a dipole moment and modifies the crystal dielectric response, but δWD and EC do not change. A vacancy yields a positive change ΔP that scatters a charge or CT pair, but the change ΔWD can be negative and large enough to outweigh ΔP, yielding traps with depths that can exceed 150 meV for single charges and for CT pairs. Divacancies yield traps with depths nearly equal to the sum of those produced by the separate vacancies and so they can exceed 300 meV. These results are consistent with a mechanism of optical damage in which vacancies trap optically generated CT pairs that recombine and release energy; this can disrupt the lattice around the vacancy, thereby favoring

Persistent photoconductivity due to trapping of induced charges in Sn/ZnO thin film based UV photodetector

Science.gov (United States)

Yadav, Harish Kumar; Sreenivas, K.; Gupta, Vinay

2010-05-01

Photoconductivity relaxation in rf magnetron sputtered ZnO thin films integrated with ultrathin tin metal overlayer is investigated. Charge carriers induced at the ZnO-metal interface by the tin metal overlayer compensates the surface lying trap centers and leads to the enhanced photoresponse. On termination of ultraviolet radiation, recombination of the photoexcited electrons with the valence band holes leaves the excess carriers deeply trapped at the recombination center and holds the dark conductivity level at a higher value. Equilibrium between the recombination centers and valence band, due to trapped charges, eventually stimulates the persistent photoconductivity in the Sn/ZnO photodetectors.

Persistent photoconductivity due to trapping of induced charges in Sn/ZnO thin film based UV photodetector

International Nuclear Information System (INIS)

Yadav, Harish Kumar; Sreenivas, K.; Gupta, Vinay

2010-01-01

Photoconductivity relaxation in rf magnetron sputtered ZnO thin films integrated with ultrathin tin metal overlayer is investigated. Charge carriers induced at the ZnO-metal interface by the tin metal overlayer compensates the surface lying trap centers and leads to the enhanced photoresponse. On termination of ultraviolet radiation, recombination of the photoexcited electrons with the valence band holes leaves the excess carriers deeply trapped at the recombination center and holds the dark conductivity level at a higher value. Equilibrium between the recombination centers and valence band, due to trapped charges, eventually stimulates the persistent photoconductivity in the Sn/ZnO photodetectors.

Resistive cooling circuits for charged particle traps using crystal resonators

CERN Document Server

Kaltenbacher, T; Doser, M; Kellerbauer, A; Pribyl, W

2011-01-01

The paper addresses a novel method to couple a signal from charged particles in a Penning trap to a high Q resonant circuit using a crystal resonator. Traditionally the trap capacity is converted into a resonator by means of an inductance. When normal conducting wires (e.g. copper) are applied to build up a coil, the unloaded Q value is limited to a value in the order of 1000. The tuned circuit’s Q factor is directly linked to the input impedance “seen” by the trapped particles at resonance frequency. This parallel resonance impedance is a measure of the efficiency of resistive cooling and thus it should be optimized. We propose here a commercially available crystal resonator since it exhibits a very high Q value and a parallel resonance impedance of several MOhm. The possibility to tune the parallel resonance frequency of the quartz results in filter behavior that allows covering a broad range of frequencies.

Effects of irradiation and isochronal anneal temperature on hole and electron trapping in MOS devices

International Nuclear Information System (INIS)

Fleetwood, D.M.; Winokur, P.S.; Shaneyfelt, M.R.; Riewe, L.C.; Flament, O.; Paillet, P.; Leray, J.L.

1998-02-01

Capacitance-voltage and thermally-stimulated-current techniques are used to estimate trapped hole and electron densities in MOS oxides as functions of irradiation and isochronal anneal temperature. Trapped-charge annealing and compensation effects are discussed

Dependence of secondary electron emission on surface charging in sapphire and polycrystalline alumina: Evaluation of the effective cross sections for recombination and trapping

International Nuclear Information System (INIS)

Said, K.; Damamme, G.; Si Ahmed, A.; Moya, G.; Kallel, A.

2014-01-01

Highlights: • A novel approach for the analysis of the secondary electron emission in connection with the surface density of trapped charges. • Experimental estimation of the effective cross section for electron–hole recombination and electron trapping in defects. • A simplified charge transport and trapping model which corroborates qualitatively the interpretation of the results. - Abstract: The evolution of the secondary electron emission from sapphire and polycrystalline alumina during electron irradiation, achieved in a scanning electron microscope at room temperature, is derived from the measurement of the induced and the secondary electron currents. The semi-logarithmic plot of the secondary electron emission yield versus the surface density of trapped charges displays a plateau followed by a linear variation. For positive charging, the slope of the linear part, whose value is of about 10 −9 cm 2 , is independent of the primary electron energy, the microstructure and the impurities. It is interpreted as an effective microscopic cross section for electron–hole recombination. For negative charging of sapphire, the slope is associated with an effective electron trapping cross section close to 10 −11 cm 2 , which can be assigned to the dominant impurity trap. These effective values reflect the multiple interactions leading to the accumulation of charges. The yield corresponding to the plateau is controlled by the initial density of impurity traps. A charge transport and trapping >model, based on simplifying assumptions, confirms qualitatively these inferences

MoO3 trapping layers with CF4 plasma treatment in flash memory applications

International Nuclear Information System (INIS)

Kao, Chuyan Haur; Chen, Hsiang; Chen, Su-Zhien; Chen, Chian Yu; Lo, Kuang-Yu; Lin, Chun Han

2014-01-01

Highlights: • MoO 3 -based flash memories have been fabricated. • CF4 plasma treatment could enhance good memory performance. • Material analyses confirm that plasma treatment eliminated defects. • Fluorine atoms might fix the dangling bonds. - Abstract: In this research, we used MoO 3 with CF 4 plasma treatment as charge trapping layer in metal-oxide-high-k -oxide-Si-type memory. We analyzed material properties and electrical characteristics with multiple analyses. The plasma treatment could increase the trapping density, reduce the leakage current, expand band gap, and passivate the defect to enhance the memory performance. The MoO 3 charge trapping layer memory with suitable CF 4 plasma treatment is promising for future nonvolatile memory applications

Applying low-energy multipulse excimer laser annealing to improve charge retention of Au nanocrystals embedded MOS capacitors

International Nuclear Information System (INIS)

Shen, Kuan-Yuan; Chen, Hung-Ming; Liao, Ting-Wei; Kuan, Chieh-Hsiung

2015-01-01

The low-energy multipulse excimer laser annealing (LEM-ELA) is proposed to anneal the nanostructure of nanocrystal (NC) embedded in a SiO 2 thin film without causing atomic diffusion and damaging the NCs, since the LEM-ELA combining the advantages of laser annealing and UV curing features rapid heating and increasing oxide network connectivity. A Fourier transform infrared spectroscopy (FTIR) characterization of SiO 2 thin films annealed using LEM-ELA indicated that the quality was improved through the removal of water-related impurities and the reconstruction of the network Si–O–Si bonds. Then, LEM-ELA was applied to a SiO 2 thin film embedded with Au NCs, which were fabricated as MOS capacitors. The charge retention was greatly improved and the percentage of retained charges was about 10% after 3  ×  10 8  s. To investigate and differentiate the effects of LEM-ELA on charges stored in both oxide traps and in the Au NCs, a double-mechanism charge relaxation analysis was performed. The results indicated that the oxide traps were removed and the confinement ability of Au NCs was enhanced. The separated memory windows contributed from the charges in Au NCs and those in oxide traps were obtained and further confirmed that the LEM-ELA removed oxide traps without damaging the Au NCs. (paper)

Characterisation of retention properties of charge-trapping memory cells at low temperatures

International Nuclear Information System (INIS)

Yurchuk, E; Bollmann, J; Mikolajick, T

2009-01-01

The density of states of deep level centers in silicon oxynitride layer of SONOS memory cells are calculated from temperature dependent retention measurement. The dominating charge loss mechanisms are direct trap-to-band tunneling (TB) and thermally stimulated emission (TE). Retention measurements at low temperatures (80 - 300K) will be dominated by TE from more 'shallow' traps with energies below 1eV and by TB. Taking into account both independent and rival processes the density of states could be calculated self consisting. The results are in excellent agreement with elsewhere published data.

Characterisation of retention properties of charge-trapping memory cells at low temperatures

Science.gov (United States)

Yurchuk, E.; Bollmann, J.; Mikolajick, T.

2009-09-01

The density of states of deep level centers in silicon oxynitride layer of SONOS memory cells are calculated from temperature dependent retention measurement. The dominating charge loss mechanisms are direct trap-to-band tunneling (TB) and thermally stimulated emission (TE). Retention measurements at low temperatures (80 - 300K) will be dominated by TE from more "shallow" traps with energies below 1eV and by TB. Taking into account both independent and rival processes the density of states could be calculated self consisting. The results are in excellent agreement with elsewhere published data.

A comprehensive study of charge trapping in organic field-effect devices with promising semiconductors and different contact metals by displacement current measurements

International Nuclear Information System (INIS)

Bisoyi, Sibani; Tiwari, Shree Prakash; Rödel, Reinhold; Zschieschang, Ute; Klauk, Hagen; Kang, Myeong Jin; Takimiya, Kazuo

2016-01-01

A systematic and comprehensive study on the charge-carrier injection and trapping behavior was performed using displacement current measurements in long-channel capacitors based on four promising small-molecule organic semiconductors (pentacene, DNTT, C 10 -DNTT and DPh-DNTT). In thin-film transistors, these semiconductors showed charge-carrier mobilities ranging from 1.0 to 7.8 cm 2 V −1 s −1 . The number of charges injected into and extracted from the semiconductor and the density of charges trapped in the device during each measurement were calculated from the displacement current characteristics and it was found that the density of trapped charges is very similar in all devices and of the order 10 12 cm −2 , despite the fact that the four semiconductors show significantly different charge-carrier mobilities. The choice of the contact metal (Au, Ag, Cu, Pd) was also found to have no significant effect on the trapping behavior. (paper)

Local charge trapping in Ge nanoclustersdetected by Kelvin probe force microscopy

Energy Technology Data Exchange (ETDEWEB)

Kondratenko, S.V., E-mail: kondr@univ.kiev.ua [Taras Shevchenko National University of Kyiv, 64/13 Volodymyrska Str., 01601, Kyiv (Ukraine); Lysenko, V.S. [Institute of Semiconductor Physics, 41 Prospect Nauki, 03028, Kyiv (Ukraine); Kozyrev, Yu. N. [O.O. Chuiko Institute of Surface Chemistry, 17 GeneralaNaumova Str. 03164, Kiev (Ukraine); Kratzer, M. [Institute of Physics, MontanuniversitätLeoben, Franz Josef Str. 18, A-8700, Leoben (Austria); Storozhuk, D.P.; Iliash, S.A. [Taras Shevchenko National University of Kyiv, 64/13 Volodymyrska Str., 01601, Kyiv (Ukraine); Czibula, C. [Institute of Physics, MontanuniversitätLeoben, Franz Josef Str. 18, A-8700, Leoben (Austria); Teichert, C., E-mail: teichert@unileoben.ac.at [Institute of Physics, MontanuniversitätLeoben, Franz Josef Str. 18, A-8700, Leoben (Austria)

2016-12-15

The understanding of local charge trapping on the nanoscale is crucial for the design of novel electronic devices and photodetectors based on SiGe nanoclusters (NCs). Here, the local spatial distribution of the surface potential of the Ge NCs was detected using Kelvin probe force microscopy (KPFM). Different surface potentials between Ge NCs and the wetting layer (WL) surface were detected at room temperature. Changes of the local contact potential differences (CPD) were studied after injection of electrons or holes into single Ge NCs on top of the Si layer using a conductive atomic force microscopy tip. The CPD image contrast was increased after electron injection by applying a forward bias to the n-tip/i-Ge NC/p-Si junction. Injecting holes into a single Ge NC was also accompanied by filling of two-dimensional states in the surrounding region, which is governed by leakage currents through WL or surface states and Coulomb charging effects. A long retention time of holes trapped by the Ge NC was found.

Effects of abscisic acid and nitric oxide on trap formation and trapping of nematodes by the fungus Drechslerella stenobrocha AS6.1.

Science.gov (United States)

Xu, Ling-Ling; Lai, Yi-Ling; Wang, Lin; Liu, Xing-Zhong

2011-02-01

The in vitro effects of abscisic acid (ABA) and nitric oxide (NO) on the nematode-trapping fungus Drechslerella stenobrocha AS6.1 were examined. The average number of traps (constricting rings) per colony and the percentage of nematodes (Caenorhabditis elegans) trapped were greatly increased by addition of ABA but greatly suppressed by addition of sodium nitroprusside (SNP, an NO donor) to corn meal agar. The suppressive effect of SNP was not negated by addition of an NO synthase competitive inhibitor (l-naphthylacetic acid, L-NNA) or an NO-specific scavenger [2-(4-carboxyphenyl)-4,4, 5,5-tetramethylimidazoline-1-oxyl-3-oxide, cPTIO]. When added without SNP, however, L-NNA and cPTIO caused moderate increases in trap number and trapping. The results indicate that the trap formation and nematode-trapping ability of D. stenobrocha were enhanced by ABA but decreased by exogenous NO. Copyright © 2010 The British Mycological Society. Published by Elsevier Ltd. All rights reserved.

A Study on the Trapping Characteristics of Rhenium Oxide Using Ca(OH)_2

International Nuclear Information System (INIS)

Lee, Tae-Kyo; Eun, Hee-Chul; Choi, Jung-Hoon; Lee, Ki-Rak; Han, Seung-Youb; Park, Hwan-Seo

2017-01-01

The objective of this study was to obtain basic data for trapping gaseous technetium (Tc) oxide generated from the voloxidation process in spent nuclear fuel pyroprocessing. Rhenium (Re) and Ca(OH)_2 were used as surrogates for the technetium and a trapping material, respectively. The trapping characteristics of rhenium oxide were investigated with changing temperatures and molar ratios of calcium (Ca) over rhenium, and the thermal behaviors of the trapping products were observed. The products following after the trapping test were identified as Ca(ReO_4)_2 and Ca_5Re_2O_1_2. The conversion to Ca_5Re_2O_1_2 was preferred with increasing temperatures, and the trapping products were completely converted into Ca5Re2O12 under conditions exceeding 800 ℃, or when maintained at 750 ℃ for 4 hr. The trapping efficiency at a molar ratio of 2.5 (Ca:Re=5:2) was significantly superior to that at the molar ratio of 2.

Charge state of oxide layer of SIMOX-structures

CERN Document Server

Askinazi, A Y; Dmitriev, V A; Miloglyadova, L V

2001-01-01

The charge state of the oxide layer of the SIMOX-structures, obtained in the course of forming the oxide layers, bricked up in the silicon volume, through the oxygen ions implantation into the Si, is studied. The charge state of the given structures is studied through the method of the layer-by-layer profiling, which makes it possible to obtain the dependence of the plane zones potential on the oxide layer thickness. It is established, that during the process of the SIMOX-structures formation in the oxide layer near the boundary with the Si there appear defects, responsible for the charge. The radiation from the near-the-ultraviolet (NUV) area without the applied electric field neutralizes the given charge. The simultaneous impact of the NUV-radiation and electric field leads to the formation of significantly positive charge

Improved speed and data retention characteristics in flash memory using a stacked HfO2/Ta2O5 charge-trapping layer

International Nuclear Information System (INIS)

Zheng, Zhiwei; Huo, Zongliang; Zhang, Manhong; Zhu, Chenxin; Liu, Jing; Liu, Ming

2011-01-01

This paper reports the simultaneous improvements in erase speed and data retention characteristics in flash memory using a stacked HfO 2 /Ta 2 O 5 charge-trapping layer. In comparison to a memory capacitor with a single HfO 2 trapping layer, the erase speed of a memory capacitor with a stacked HfO 2 /Ta 2 O 5 charge-trapping layer is 100 times faster and its memory window is enlarged from 2.7 to 4.8 V for the same ±16 V sweeping voltage range. With the same initial window of ΔV FB = 4 V, the device with a stacked HfO 2 /Ta 2 O 5 charge-trapping layer has a 3.5 V extrapolated 10-year retention window, while the control device with a single HfO 2 trapping layer has only 2.5 V for the extrapolated 10-year window. The present results demonstrate that the device with the stacked HfO 2 /Ta 2 O 5 charge-trapping layer has a strong potential for future high-performance nonvolatile memory application

Top-Down Charge Transfer Dissociation (CTD) of Gas-Phase Insulin: Evidence of a One-Step, Two-Electron Oxidation Mechanism

Science.gov (United States)

Li, Pengfei; Kreft, Iris; Jackson, Glen P.

2018-02-01

Top-down analyses of protonated insulin cations of charge states of 4+, 5+, or 6+ were performed by exposing the isolated precursor ions to a beam of helium cations with kinetic energy of more than 6 keV, in a technique termed charge transfer dissociation (CTD). The 100 ms charge transfer reaction resulted in approximately 20% conversion efficiency to other intact charge exchange products (CTnoD), and a range of low abundance fragment ions. To increase backbone and sulfide cleavages, and to provide better structural information than straightforward MS2 CTD, the CTnoD oxidized products were isolated and subjected to collisional activation at the MS3 level. The MS3 CTD/CID reaction effectively broke the disulfide linkages, separated the two chains, and yielded more structurally informative fragment ions within the inter-chain cyclic region. CTD also provided doubly oxidized intact product ions at the MS2 level, and resonance ejection of the singly oxidized product ion revealed that the doubly oxidized product originates directly from the isolated precursor ion and not from consecutive CTD reactions of a singly oxidized intermediate. MS4 experiments were employed to help identify potential radical cations and diradical cations, but the results were negative or inconclusive. Nonetheless, the two-electron oxidation process is a demonstration of the very large potential energy (>20 eV) available through CTD, and is a notable capability for a 3D ion trap platform.

Homogeneous-oxide stack in IGZO thin-film transistors for multi-level-cell NAND memory application

Science.gov (United States)

Ji, Hao; Wei, Yehui; Zhang, Xinlei; Jiang, Ran

2017-11-01

A nonvolatile charge-trap-flash memory that is based on amorphous indium-gallium-zinc-oxide thin film transistors was fabricated with a homogeneous-oxide structure for a multi-level-cell application. All oxide layers, i.e., tunneling layer, charge trapping layer, and blocking layer, were fabricated with Al2O3 films. The fabrication condition (including temperature and deposition method) of the charge trapping layer was different from those of the other oxide layers. This device demonstrated a considerable large memory window of 4 V between the states fully erased and programmed with the operation voltage less than 14 V. This kind of device shows a good prospect for multi-level-cell memory applications.

Spectroscopy of Charge Carriers and Traps in Field-Doped Single Crystal Organic Semiconductors

Energy Technology Data Exchange (ETDEWEB)

Zhu, Xiaoyang [Columbia Univ., New York, NY (United States); Frisbie, Daniel [Univ. of Minnesota, Minneapolis, MN (United States)

2017-03-31

The proposed research aims to achieve quantitative, molecular level understanding of charge carriers and traps in field-doped crystalline organic semiconductors via in situ linear and nonlinear optical spectroscopy, in conjunction with transport measurements and molecular/crystal engineering.

Reduction of charge trapping and electron tunneling in SIMOX by supplemental implantation of oxygen

International Nuclear Information System (INIS)

Stahlbush, R.E.; Hughes, H.L.; Krull, W.A.

1993-01-01

Silicon-on-insulator, SOI, technologies are being aggressively pursued to produce high density, high speed, radiation tolerant electronics. The dielectric isolation of the buried oxide makes it possible to design integrated circuits that greatly minimize single event upset and eliminate dose-rate induced latchup and upset. The reduction of excess-silicon related defects in SIMOX by the supplemental implantation of oxygen has been examined. The supplemental implant is 6% of the oxygen dose used to form the buried oxide, and is followed by a 1,000 C anneal, in contrast to the >1,300 C anneal used to form the buried oxide layer of SIMOX. The defects examined include shallow electron traps, deep hole traps, and silicon clusters. The radiation-induced shallow electron and deep hole trapping are measured by cryogenic detrapping and isothermal annealing techniques. The low-field (3 to 6 MV/cm) electron tunneling is interpreted as due to a two phase mixture of stoichiometric SiO 2 and Si clusters a few nm in size. Single and triple SIMOS samples have been examined. All of the defects are reduced by the supplemental oxygen processing. Shallow electron trapping is reduced by an order of magnitude. Because of the larger capture cross section for hole trapping, hole trapping is not reduced as much. The low-field electron tunneling due to Si clusters is also significantly reduced. Both uniform and nonuniform electron tunneling have been observed in SIMOX samples without supplement processing. In samples exhibiting only uniform tunneling, electron capture at holes has been observed. The nonuniform tunneling is superimposed upon the uniform tunneling and is characterized by current spiking

Non-contact, non-destructive, quantitative probing of interfacial trap sites for charge carrier transport at semiconductor-insulator boundary

Energy Technology Data Exchange (ETDEWEB)

Choi, Wookjin; Miyakai, Tomoyo; Sakurai, Tsuneaki; Saeki, Akinori [Department of Applied Chemistry, Graduate School of Engineering, Osaka University, Suita 565-0871 (Japan); Yokoyama, Masaaki [Kaneka Fundamental Technology Research Alliance Laboratories, Graduate School of Engineering, Osaka University, Suita 565-0871 (Japan); Seki, Shu, E-mail: seki@chem.eng.osaka-u.ac.jp [Department of Applied Chemistry, Graduate School of Engineering, Osaka University, Suita 565-0871 (Japan); Kaneka Fundamental Technology Research Alliance Laboratories, Graduate School of Engineering, Osaka University, Suita 565-0871 (Japan)

2014-07-21

The density of traps at semiconductor–insulator interfaces was successfully estimated using microwave dielectric loss spectroscopy with model thin-film organic field-effect transistors. The non-contact, non-destructive analysis technique is referred to as field-induced time-resolved microwave conductivity (FI-TRMC) at interfaces. Kinetic traces of FI-TRMC transients clearly distinguished the mobile charge carriers at the interfaces from the immobile charges trapped at defects, allowing both the mobility of charge carriers and the number density of trap sites to be determined at the semiconductor-insulator interfaces. The number density of defects at the interface between evaporated pentacene on a poly(methylmethacrylate) insulating layer was determined to be 10{sup 12 }cm{sup −2}, and the hole mobility was up to 6.5 cm{sup 2} V{sup −1} s{sup −1} after filling the defects with trapped carriers. The FI-TRMC at interfaces technique has the potential to provide rapid screening for the assessment of interfacial electronic states in a variety of semiconductor devices.

High performance SONOS flash memory with in-situ silicon nanocrystals embedded in silicon nitride charge trapping layer

Science.gov (United States)

Lim, Jae-Gab; Yang, Seung-Dong; Yun, Ho-Jin; Jung, Jun-Kyo; Park, Jung-Hyun; Lim, Chan; Cho, Gyu-seok; Park, Seong-gye; Huh, Chul; Lee, Hi-Deok; Lee, Ga-Won

2018-02-01

In this paper, SONOS-type flash memory device with highly improved charge-trapping efficiency is suggested by using silicon nanocrystals (Si-NCs) embedded in silicon nitride (SiNX) charge trapping layer. The Si-NCs were in-situ grown by PECVD without additional post annealing process. The fabricated device shows high program/erase speed and retention property which is suitable for multi-level cell (MLC) application. Excellent performance and reliability for MLC are demonstrated with large memory window of ∼8.5 V and superior retention characteristics of 7% charge loss for 10 years. High resolution transmission electron microscopy image confirms the Si-NC formation and the size is around 1-2 nm which can be verified again in X-ray photoelectron spectroscopy (XPS) where pure Si bonds increase. Besides, XPS analysis implies that more nitrogen atoms make stable bonds at the regular lattice point. Photoluminescence spectra results also illustrate that Si-NCs formation in SiNx is an effective method to form deep trap states.

Spectroscopy of highly charged tungsten ions with Electron Beam Ion Traps

International Nuclear Information System (INIS)

Sakaue, Hiroyuki A.; Kato, Daiji; Morita, Shigeru; Murakami, Izumi; Yamamoto, Norimasa; Ohashi, Hayato; Yatsurugi, Junji; Nakamura, Nobuyuki

2013-01-01

We present spectra of highly charged tungsten ions in the extreme ultra-violet (EUV) by using electron beam ion traps. The electron energy dependence of spectra is investigated of electron energies from 490 to 1440 eV. Previously unreported lines are presented in the EUV range, and some of them are identified by comparing the wavelengths with theoretical calculations. (author)

Radiation effects in metal-oxide-semiconductor capacitors

International Nuclear Information System (INIS)

Collins, J.L.

1987-01-01

The effects of various radiations on commercially made Al-SiO 2 -Si Capacitors (MOSCs) have been investigated. Intrinsic dielectric breakdown in MOSCs has been shown to be a two-stage process dominated by charge injection in a pre-breakdown stage; this is associated with localised high-field injection of carriers from the semiconductor substrate to interfacial and bulk charge traps which, it is proposed, leads to the formation of conducting channels through the dielectric with breakdown occurring as a result of the dissipation of the conduction band energy. A study of radiation-induced dielectric breakdown has revealed the possibility of anomalous hot-electron injection to an excess of bulk oxide traps in the ionization channel produced by very heavily ionizing radiation, which leads to intrinsic breakdown in high-field stressed devices. This is interpreted in terms of a modified model for radiation-induced dielectric breakdown based upon the primary dependence of breakdown on charge injection rather than high-field mechanisms. A detailed investigation of charge trapping and interface state generation due to various radiations has revealed evidence of neutron induced interface states, and the generation of positive oxide charge in devices due to all the radiations tested. The greater the linear energy transfer of the radiation, the greater the magnitude of charge trapped in the oxide and the number of interface states generated. This is interpreted in terms of Si-H and Si-OH bond-breaking at the Si-SiO 2 interface which is enhanced by charge carrier transfer to the interface and by anomalous charge injection to compensate for the excess of charge carriers created by the radiation. (author)

Organic nonvolatile memory devices with charge trapping multilayer graphene film

International Nuclear Information System (INIS)

Ji, Yongsung; Choe, Minhyeok; Cho, Byungjin; Song, Sunghoon; Yoon, Jongwon; Ko, Heung Cho; Lee, Takhee

2012-01-01

We fabricated an array-type organic nonvolatile memory device with multilayer graphene (MLG) film embedded in polyimide (PI) layers. The memory devices showed a high ON/OFF ratio (over 10 6 ) and a long retention time (over 10 4 s). The switching of the Al/PI/MLG/PI/Al memory devices was due to the presence of the MLG film inserted into the PI layers. The double-log current–voltage characteristics could be explained by the space-charge-limited current conduction based on a charge-trap model. A conductive atomic force microscopy found that the conduction paths in the low-resistance ON state were distributed in a highly localized area, which was associated with a carbon-rich filamentary switching mechanism. (paper)

Charge-trapping effect of doped fluorescent dye on the electroluminescent processes and its performance in polymer light-emitting diodes

Energy Technology Data Exchange (ETDEWEB)

Ye Tengling; Chen Zhenyu; Chen Jiangshan [State Key Laboratory of Polymer Physics and Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Graduate School of Chinese Academy of Sciences, Changchun 130022 (China); Ma Dongge, E-mail: mdg1014@ciac.jl.cn [State Key Laboratory of Polymer Physics and Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Graduate School of Chinese Academy of Sciences, Changchun 130022 (China)

2010-11-15

We have measured the temperature dependence of the steady-state current-voltage (I-V) characteristics and the transient electroluminescent (EL) characteristics in 4-(dicyanomethylene)-2-t-propyl-6-(1,1,7, 7-tetramethyljulolidyl-9-enyl)-4H-pyran (DCJTB) doped polyfluorene devices to study the charge-trapping effect of DCJTB fluorescent dye on luminescence processes and on device performance. Physical and chemical analyses prove that DCJTB molecules serve both as electron and hole traps, and the charge-trapping effect is more sensitive against the electrons than the holes at the low dopant concentration. This intrinsic characteristic causes the electron to be injected into the emitting layer first and then trapped in the bulk, producing a strong effect on device performance.

Structure and dynamics of highly charged heavy ions studied with the electron beam ion trap in Tokyo

International Nuclear Information System (INIS)

Nakamura, Nobuyuki; Hu, Zhimin; Watanabe, Hirofumi; Li, Yueming; Kato, Daiji; Currell, Fred J.; Tong Xiaomin; Watanabe, Tsutomu; Ohtani, Shunsuke

2011-01-01

In this paper, we present the structure and the dynamics of highly charged heavy ions studied through dielectronic recombination (DR) observations performed with the Tokyo electron beam ion trap. By measuring the energy dependence of the ion abundance ratio in the trap at equilibrium, we have observed DR processes for open shell systems very clearly. Remarkable relativistic effects due to the generalized Breit interaction have been clearly shown in DR for highly charged heavy ions. We also present the first result for the coincidence measurement of two photons emitted from a single DR event.

Intrinsic electron traps in atomic-layer deposited HfO{sub 2} insulators

Energy Technology Data Exchange (ETDEWEB)

Cerbu, F.; Madia, O.; Afanas' ev, V. V.; Houssa, M.; Stesmans, A. [Laboratory of Semiconductor Physics, Department of Physics and Astronomy, University of Leuven, 3001 Leuven (Belgium); Andreev, D. V. [Laboratory of Semiconductor Physics, Department of Physics and Astronomy, University of Leuven, 3001 Leuven (Belgium); Bauman Moscow State Technical University—Kaluga Branch, 248000 Kaluga, Moscow obl. (Russian Federation); Fadida, S.; Eizenberg, M. [Department of Materials Science and Engineering, Technion-Israel Institute of Technology, 32000 Haifa (Israel); Breuil, L. [imec, 3001 Leuven (Belgium); Lisoni, J. G. [imec, 3001 Leuven (Belgium); Institute of Physics and Mathematics, Faculty of Science, Universidad Austral de Chile, Valdivia (Chile); Kittl, J. A. [Laboratory of Semiconductor Physics, Department of Physics and Astronomy, University of Leuven, 3001 Leuven (Belgium); Advanced Logic Lab, Samsung Semiconductor, Inc., Austin, 78754 Texas (United States); Strand, J.; Shluger, A. L. [Department of Physics and Astronomy, University College London, London WC1E 6BT (United Kingdom)

2016-05-30

Analysis of photodepopulation of electron traps in HfO{sub 2} films grown by atomic layer deposition is shown to provide the trap energy distribution across the entire oxide bandgap. The presence is revealed of two kinds of deep electron traps energetically distributed at around E{sub t} ≈ 2.0 eV and E{sub t} ≈ 3.0 eV below the oxide conduction band. Comparison of the trapped electron energy distributions in HfO{sub 2} layers prepared using different precursors or subjected to thermal treatment suggests that these centers are intrinsic in origin. However, the common assumption that these would implicate O vacancies cannot explain the charging behavior of HfO{sub 2}, suggesting that alternative defect models should be considered.

Charge transport in metal oxide nanocrystal-based materials

Science.gov (United States)

Runnerstrom, Evan Lars

There is probably no class of materials more varied, more widely used, or more ubiquitous than metal oxides. Depending on their composition, metal oxides can exhibit almost any number of properties. Of particular interest are the ways in which charge is transported in metal oxides: devices such as displays, touch screens, and smart windows rely on the ability of certain metal oxides to conduct electricity while maintaining visible transparency. Smart windows, fuel cells, and other electrochemical devices additionally rely on efficient transport of ionic charge in and around metal oxides. Colloidal synthesis has enabled metal oxide nanocrystals to emerge as a relatively new but highly tunable class of materials. Certain metal oxide nanocrystals, particularly highly doped metal oxides, have been enjoying rapid development in the last decade. As in myriad other materials systems, structure dictates the properties of metal oxide nanocrystals, but a full understanding of how nanocrystal synthesis, the processing of nanocrystal-based materials, and the structure of nanocrystals relate to the resulting properties of nanocrystal-based materials is still nascent. Gaining a fundamental understanding of and control over these structure-property relationships is crucial to developing a holistic understanding of metal oxide nanocrystals. The unique ability to tune metal oxide nanocrystals by changing composition through the introduction of dopants or by changing size and shape affords a way to study the interplay between structure, processing, and properties. This overall goal of this work is to chemically synthesize colloidal metal oxide nanocrystals, process them into useful materials, characterize charge transport in materials based on colloidal metal oxide nanocrystals, and develop ways to manipulate charge transport. In particular, this dissertation characterizes how the charge transport properties of metal oxide nanocrystal-based materials depend on their processing and

Charge Carrier Trapping Processes in RE2O2S (RE = La, Gd, Y, and Lu)

NARCIS (Netherlands)

Luo, H.; Bos, A.J.J.; Dorenbos, P.

2017-01-01

Two different charge carrier trapping processes have been investigated in RE2O2S:Ln3+ (RE = La, Gd, Y, and Lu; Ln = Ce, Pr, and Tb) and RE2O2S:M (M = Ti4+ and Eu3+). Cerium, praseodymium and terbium act as recombination centers and hole trapping centers while host intrinsic defects provide the

Conduction mechanism of leakage current due to the traps in ZrO2 thin film

International Nuclear Information System (INIS)

Seo, Yohan; Lee, Sangyouk; An, Ilsin; Jeong, Heejun; Song, Chulgi

2009-01-01

In this work, a metal-oxide-semiconductor capacitor with zirconium oxide (ZrO 2 ) gate dielectric was fabricated by an atomic layer deposition (ALD) technique and the leakage current characteristics under negative bias were studied. From the result of current–voltage curves there are two possible conduction mechanisms to explain the leakage current in the ZrO 2 thin film. The dominant mechanism is the space charge limited conduction in the high-electric field region (1.5–5.0 MV cm −1 ) while the trap-assisted tunneling due to the existence of traps is prevailed in the low-electric field region (0.8–1.5 MV cm −1 ). Conduction caused by the trap-assisted tunneling is found from the experimental results of a weak temperature dependence of current, and the trap barrier height is obtained. The space charge limited conduction is evidenced, for different temperatures, by Child's law dependence of current density versus voltage. Child's law dependence can be explained by considering a single discrete trapping level and we can obtain the activation energy of 0.22 eV

Conduction mechanism of leakage current due to the traps in ZrO2 thin film

Science.gov (United States)

Seo, Yohan; Lee, Sangyouk; An, Ilsin; Song, Chulgi; Jeong, Heejun

2009-11-01

In this work, a metal-oxide-semiconductor capacitor with zirconium oxide (ZrO2) gate dielectric was fabricated by an atomic layer deposition (ALD) technique and the leakage current characteristics under negative bias were studied. From the result of current-voltage curves there are two possible conduction mechanisms to explain the leakage current in the ZrO2 thin film. The dominant mechanism is the space charge limited conduction in the high-electric field region (1.5-5.0 MV cm-1) while the trap-assisted tunneling due to the existence of traps is prevailed in the low-electric field region (0.8-1.5 MV cm-1). Conduction caused by the trap-assisted tunneling is found from the experimental results of a weak temperature dependence of current, and the trap barrier height is obtained. The space charge limited conduction is evidenced, for different temperatures, by Child's law dependence of current density versus voltage. Child's law dependence can be explained by considering a single discrete trapping level and we can obtain the activation energy of 0.22 eV.

La modified TiO{sub 2} photoanode and its effect on DSSC performance: A comparative study of doping and surface treatment on deep and surface charge trapping

Energy Technology Data Exchange (ETDEWEB)

Ako, Rajour Tanyi [Faculty of Science, Universiti Brunei Darussalam, Jalan Tungku Link, BE1410, Negara Brunei Darussalam (Brunei Darussalam); Ekanayake, Piyasiri, E-mail: piyasiri.ekanayake@ubd.edu.bn [Faculty of Science, Universiti Brunei Darussalam, Jalan Tungku Link, BE1410, Negara Brunei Darussalam (Brunei Darussalam); Centre for Advanced Material and Energy Sciences (CAMES), Universiti Brunei Darussalam, Jalan Tungku Link, BE1410, Negara Brunei Darussalam (Brunei Darussalam); Tan, Ai Ling [Faculty of Science, Universiti Brunei Darussalam, Jalan Tungku Link, BE1410, Negara Brunei Darussalam (Brunei Darussalam); Young, David James [Faculty of Science, Universiti Brunei Darussalam, Jalan Tungku Link, BE1410, Negara Brunei Darussalam (Brunei Darussalam); Faculty of Science, Health, Education and Engineering, University of the Sunshine Coast, Maroochydore DC, Queensland, 4558 (Australia); Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research - A*STAR, #08-03, 2 Fusionopolis Way, Innovis, 138634 (Singapore)

2016-04-01

The effect of Lanthanum ions (La{sup 3+}) on charge trapping in dye-sensitized solar cell (DSSC) photoanodes has been investigated with doped and surface-treated TiO{sub 2} nanoparticles. Doped nanoparticles consisting of 0.5 mol.% Mg and La co-doped TiO{sub 2}, 0.5 mol.% Mg doped TiO{sub 2} and pure TiO{sub 2} were synthesized by the sol gel method. Surface-treated nanoparticles of Mg doped TiO{sub 2} and pure TiO{sub 2} were prepared by ball milling in 0.05 M aqueous La{sup 3+} solution. All materials were analyzed by XRD, XPS and UV–Vis DRS. Cell performance, surface free energy state changes and electron injection efficiency of DSSCs based on these nanoparticles were evaluated using current –voltage measurements, EIS and Incident photon to current conversion efficiency. Doped materials had La and Mg ions incorporated into the TiO{sub 2} lattice, while no lattice changes were observed for the surface-treated materials. Less visible light was absorbed by treated oxides compared with doped oxide samples. The overall power conversion efficiencies (PCE) of DSSC photoanodes based on doped materials were twice those of photoanodes fabricated from treated nanoparticles. Doping establishes deep traps that reduce the recombination of electron–hole (e–h) pairs. Conversely, the presence of absorbed oxygen in treated materials enhances e–h recombination with electrolyte at surface trap sites. - Highlights: • DSSC performance is investigated using photoanodes of doped and La{sup 3+} surface treated TiO{sub 2}. • TiO{sub 2} and Mg–TiO{sub 2} treated with La{sup 3+} absorbed less visible light. • A high concentration of absorbed oxygen on surface treated oxides reduced band bending. • Increased surface free energy in the modified DSSC anodes is caused more by Mg{sup 2+} at Ti{sup 4+} than by La{sup 3+} at the surfaces. • Near surface charge traps due to La{sup 3+} treatment promotes e–h recombination.

EUV spectrum of highly charged tungsten ions in electron beam ion trap

International Nuclear Information System (INIS)

Sakaue, H.A.; Kato, D.; Murakami, I.; Nakamura, N.

2016-01-01

We present spectra of highly charged tungsten ions in the extreme ultra-violet (EUV) by using electron beam ion traps. The electron energy dependence of spectra was investigated for electron energy from 540 to 1370 eV. Previously unreported lines were presented in the EUV range, and comparing the wavelengths with theoretical calculations identified them. (author)

Fast and slow border traps in MOS devices

International Nuclear Information System (INIS)

Fleetwood, D.M.

1996-01-01

Convergent lines of evidence are reviewed which show that near-interfacial oxide traps (border traps) that exchange charge with the Si can strongly affect the performance, radiation response, and long-term reliability of MOS devices. Observable effects of border traps include capacitance-voltage (C-V) hysteresis, enhanced l/f noise, compensation of trapped holes, and increased thermally stimulated current in MOS capacitors. Effects of faster (switching times between ∼10 -6 s and ∼1 s) and slower (switching times greater than ∼1 s) border traps have been resolved via a dual-transistor technique. In conjunction with studies of MOS electrical response, electron paramagnetic resonance and spin dependent recombination studies suggest that E' defects (trivalent Si centers in SiO 2 associated with O vacancies) can function as border traps in MOS devices exposed to ionizing radiation or high-field stress. Hydrogen-related centers may also be border traps

Extraction of sub-gap density of states via capacitance-voltage measurement for the erasing process in a TFT charge-trapping memory

Science.gov (United States)

Chiang, Yen-Chang; Hsiao, Yang-Hsuan; Li, Jeng-Ting; Chen, Jen-Sue

2018-02-01

Charge-trapping memories (CTMs) based on zinc tin oxide (ZTO) semiconductor thin-film transistors (TFTs) can be programmed by a positive gate voltage and erased by a negative gate voltage in conjunction with light illumination. To understand the mechanism involved, the sub-gap density of states associated with ionized oxygen vacancies in the ZTO active layer is extracted from optical response capacitance-voltage (C-V) measurements. The corresponding energy states of ionized oxygen vacancies are observed below the conduction band minimum at approximately 0.5-1.0 eV. From a comparison of the fitted oxygen vacancy concentration in the CTM-TFT after the light-bias erasing operation, it is found that the pristine-erased device contains more oxygen vacancies than the program-erased device because the trapped electrons in the programmed device are pulled into the active layer and neutralized by the oxygen vacancies that are present there.

Correlated lifetimes of free paraexcitons and excitons trapped at oxygen vacancies in cuprous oxide

International Nuclear Information System (INIS)

Koirala, Sandhaya; Naka, Nobuko; Tanaka, Koichiro

2013-01-01

We have studied transients of luminescence due to free excitons and excitons trapped at oxygen vacancies in cuprous oxide. We find that both trapped and free paraexcitons have lifetime dependent on temperature and on the oxygen concentration. By using samples containing much less copper vacancies relative to oxygen vacancies, we find out the direct correlation between the free paraexciton lifetime and trapped exciton lifetime. - Highlights: ► We have investigated trapping of free excitons at oxygen vacancies in cuprous oxide. ► Lifetimes of free and trapped excitons exhibit correlative temperature dependence. ► Four-level model with the activation energy of 33 meV well explains the observation. ► Comparison is made using the four samples with different vacancy concentrations. ► We clarified the crucial role of the oxygen vacancy in shortening the lifetimes.

A Study on the Trapping Characteristics of Rhenium Oxide Using Ca(OH){sub 2}

Energy Technology Data Exchange (ETDEWEB)

Lee, Tae-Kyo; Eun, Hee-Chul; Choi, Jung-Hoon; Lee, Ki-Rak; Han, Seung-Youb; Park, Hwan-Seo [Korea Atomic Energy Research Institute, Daejeon (Korea, Republic of)

2017-01-15

The objective of this study was to obtain basic data for trapping gaseous technetium (Tc) oxide generated from the voloxidation process in spent nuclear fuel pyroprocessing. Rhenium (Re) and Ca(OH){sub 2} were used as surrogates for the technetium and a trapping material, respectively. The trapping characteristics of rhenium oxide were investigated with changing temperatures and molar ratios of calcium (Ca) over rhenium, and the thermal behaviors of the trapping products were observed. The products following after the trapping test were identified as Ca(ReO{sub 4}){sub 2} and Ca{sub 5}Re{sub 2}O{sub 12}. The conversion to Ca{sub 5}Re{sub 2}O{sub 12} was preferred with increasing temperatures, and the trapping products were completely converted into Ca5Re2O12 under conditions exceeding 800 ℃, or when maintained at 750 ℃ for 4 hr. The trapping efficiency at a molar ratio of 2.5 (Ca:Re=5:2) was significantly superior to that at the molar ratio of 2.

Photoreductive dissolution of iron oxides trapped in ice and its environmental implications.

Science.gov (United States)

Kim, Kitae; Choi, Wonyong; Hoffmann, Michael R; Yoon, Ho-Il; Park, Byong-Kwon

2010-06-01

The availability of iron has been thought to be a main limiting factor for the productivity of phytoplankton and related with the uptake of atmospheric CO(2) and algal blooms in fresh and sea waters. In this work, the formation of bioavailable iron (Fe(II)(aq)) from the dissolution of iron oxide particles was investigated in the ice phase under both UV and visible light irradiation. The photoreductive dissolution of iron oxides proceeded slowly in aqueous solution (pH 3.5) but was significantly accelerated in polycrystalline ice, subsequently releasing more bioavailable ferrous iron upon thawing. The enhanced photogeneration of Fe(II)(aq) in ice was confirmed regardless of the type of iron oxides [hematite, maghemite (gamma-Fe(2)O(3)), goethite (alpha-FeOOH)] and the kind of electron donors. The ice-enhanced dissolution of iron oxides was also observed under visible light irradiation, although the dissolution rate was much slower compared with the case of UV radiation. The iron oxide particles and organic electron donors (if any) in ice are concentrated and aggregated in the liquid-like grain boundary region (freeze concentration effect) where protons are also highly concentrated (lower pH). The enhanced photodissolution of iron oxides should occur in this confined boundary region. We hypothesized that electron hopping through the interconnected grain boundaries of iron oxide particles facilitates the separation of photoinduced charge pairs. The outdoor experiments carried out under ambient solar radiation of Ny-Alesund (Svalbard, 78 degrees 55'N) also showed that the generation of dissolved Fe(II)(aq) via photoreductive dissolution is enhanced when iron oxides are trapped in ice. Our results imply that the ice(snow)-covered surfaces and ice-cloud particles containing iron-rich mineral dusts in the polar and cold environments provide a source of bioavailable iron when they thaw.

Charge and excitation dynamics in semiconducting polymer layers doped with emitters and charge carrier traps; Ladungstraeger- und Anregungsdynamik in halbleitenden Polymerschichten mit eingemischten Emittern und Ladungstraegerfallen

Energy Technology Data Exchange (ETDEWEB)

Jaiser, F

2006-06-15

Light-emitting diodes generate light from the recombination of injected charge carriers. This can be obtained in inorganic materials. Here, it is necessary to produce highly ordered crystalline structures that determine the properties of the device. Another possibility is the utilization of organic molecules and polymers. Based on the versatile organic chemistry, it is possible to tune the properties of the semiconducting polymers already during synthesis. In addition, semiconducting polymers are mechanically flexible. Thus, it is possible to construct flexible, large-area light sources and displays. The first light-emitting diode using a polymer emitter was presented in 1990. Since then, this field of research has grown rapidly up to the point where first products are commercially available. It has become clear that the properties of polymer light-emitting diodes such as color and efficiency can be improved by incorporating multiple components inside the active layer. At the same time, this gives rise to new interactions between these components. While components are often added either to improve the charge transport or to change the emission, it has to made sure that other processes are not influenced in a negative manner. This work investigates some of these interactions and describes them with simple physical models. First, blue light-emitting diodes based on polyfluorene are analyzed. This polymer is an efficient emitter, but it is susceptible to the formation of chemical defects that can not be suppressed completely. These defects form electron traps, but their effect can be compensated by the addition of hole traps. The underlying process, namely the changed charge carrier balance, is explained. In the following, blend systems with dendronized emitters that form electron traps are investigated. The different influence of the insulating shell on the charge and energy transfer between polymer host and the emissive core of the dendrimers is examined. In the

Dissipative dust-acoustic shock waves in a varying charge electronegative magnetized dusty plasma with trapped electrons

Energy Technology Data Exchange (ETDEWEB)

Bacha, Mustapha [Faculty of Physics, Theoretical Physics Laboratory, Plasma Physics Group, University of Bab-Ezzouar, USTHB, B.P. 32, El Alia, Algiers 16111 (Algeria); Tribeche, Mouloud, E-mail: mouloudtribeche@yahoo.fr, E-mail: mtribeche@usthb.dz [Faculty of Physics, Theoretical Physics Laboratory, Plasma Physics Group, University of Bab-Ezzouar, USTHB, B.P. 32, El Alia, Algiers 16111 (Algeria); Algerian Academy of Sciences and Technologies, Algiers (Algeria)

2016-08-15

The combined effects of an oblique magnetic field and electron trapping on dissipative dust-acoustic waves are examined in varying charge electronegative dusty plasmas with application to the Halley Comet plasma (∼10{sup 4} km from the nucleus). A weakly nonlinear analysis is carried out to derive a modified Korteweg-de Vries-Burger-like equation. Making use of the equilibrium current balance equation, the physically admissible values of the electron trapping parameter are first constrained. We then show that the Burger dissipative term is solely due to the dust charge variation process. It is found that an increase of the magnetic field obliqueness or a decrease of its magnitude renders the shock structure more dispersive.

Dependence of the carrier mobility and trapped charge limited conduction on silver nanoparticles embedment in doped polypyrrole nanostructures

Science.gov (United States)

Biswas, Swarup; Dutta, Bula; Bhattacharya, Subhratanu

2013-10-01

The present article demonstrates an intensive study upon the temperature dependent current density (J)-voltage (V) characteristics of moderately doped polypyrrole nanostructure and its silver nanoparticles incorporated nanocomposites. Analysis of the measured J-V characteristics of different synthesized nano-structured samples within a wide temperature range revealed that the electrical conduction behavior followed a trapped charge-limited conduction and a transition of charge transport mechanism from deep exponential trap limited conduction to shallow traps limited conduction had been occurred due to the incorporation of silver nanoparticles within the polypyrrole matrix. A direct evaluation of carrier mobility as a function of electric field and temperature from the measured J-V characteristics illustrates that the incorporation of silver nanoparticles within the polypyrrole matrix enhances the carrier mobility at a large extent by reducing the concentration of traps within the polypyrrole matrix. The calculated mobility is consistent with the Poole-Frenkel form for the electrical field up to a certain temperature range. The nonlinear low temperature dependency of mobility of all the nanostructured samples was explained by Mott variable range hopping conduction mechanisms. Quantitative information regarding the charge transport parameters obtained from the above study would help to extend optimization strategies for the fabrication of new organic semiconducting nano-structured devices.

Long charged macromolecule in an entropic trap with rough surfaces.

Science.gov (United States)

Mamasakhlisov, Yevgeni Sh; Hayryan, Shura; Hu, Chin-Kun

2012-11-01

The kinetics of the flux of a charged macromolecular solution through an environment of changing geometry with wide and constricted regions is investigated analytically. A model device consisting of alternating deep and shallow slits known as an "entropic trap" is used to represent the environment. The flux is supported by the external electrostatic field. The "wormlike chain" model is used for the macromolecule (dsDNA in the present study). The chain entropy in both the deep and the shallow slits, the work by the electric field, and the energy of the elastic bending of the chain are taken into account accurately. Based on the calculated free energy, the kinetics and the scaling behavior of the chain escaping from the entropic trap are studied. We find that the escape process occurs in two kinetic stages with different time scales and discuss the possible influence of the surface roughness. The scope of the accuracy of the proposed model is discussed.

Transparent Flash Memory using Single Ta2O5 Layer for both Charge Trapping and Tunneling Dielectrics

KAUST Repository

Hota, Mrinal Kanti

2017-06-08

We report reproducible multibit transparent flash memory in which a single solution-derived Ta2O5 layer is used simultaneously as charge trapping and tunneling layer. This is different from conventional flash cells, where two different dielectric layers are typically used. Under optimized programming/erasing operations, the memory device shows excellent programmable memory characteristics with a maximum memory window of ~10 V. Moreover, the flash memory device shows a stable 2-bit memory performance, good reliability, including data retention for more than 104 sec and endurance performance for more than 100 cycles. The use of a common charge trapping and tunneling layer can simplify advanced flash memory fabrication.

Transparent Flash Memory using Single Ta2O5 Layer for both Charge Trapping and Tunneling Dielectrics

KAUST Repository

Hota, Mrinal Kanti; Alshammari, Fwzah H.; Salama, Khaled N.; Alshareef, Husam N.

2017-01-01

We report reproducible multibit transparent flash memory in which a single solution-derived Ta2O5 layer is used simultaneously as charge trapping and tunneling layer. This is different from conventional flash cells, where two different dielectric layers are typically used. Under optimized programming/erasing operations, the memory device shows excellent programmable memory characteristics with a maximum memory window of ~10 V. Moreover, the flash memory device shows a stable 2-bit memory performance, good reliability, including data retention for more than 104 sec and endurance performance for more than 100 cycles. The use of a common charge trapping and tunneling layer can simplify advanced flash memory fabrication.

Hysteresis in Lanthanide Aluminum Oxides Observed by Fast Pulse CV Measurement

Directory of Open Access Journals (Sweden)

Chun Zhao

2014-10-01

Full Text Available Oxide materials with large dielectric constants (so-called high-k dielectrics have attracted much attention due to their potential use as gate dielectrics in Metal Oxide Semiconductor Field Effect Transistors (MOSFETs. A novel characterization (pulse capacitance-voltage method was proposed in detail. The pulse capacitance-voltage technique was employed to characterize oxide traps of high-k dielectrics based on the Metal Oxide Semiconductor (MOS capacitor structure. The variation of flat-band voltages of the MOS structure was observed and discussed accordingly. Some interesting trapping/detrapping results related to the lanthanide aluminum oxide traps were identified for possible application in Flash memory technology. After understanding the trapping/detrapping mechanism of the high-k oxides, a solid foundation was prepared for further exploration into charge-trapping non-volatile memory in the future.

Shell model for REO{sub x} nanoclusters in amorphous SiO{sub 2}: charge trapping and electroluminescence quenching

Energy Technology Data Exchange (ETDEWEB)

Tiagulskyi, S.; Nazarov, A.; Tyagulskii, I.; Lysenko, V. [Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, Prospekt Nauki 41, 03028 Kiev (Ukraine); Rebohle, L.; Lehmann, J.; Skorupa, W. [Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden Rossendorf e.V., POB 510119, 01314 Dresden (Germany)

2012-06-15

In this work charge trapping and electroluminescence (EL) quenching in rare-earth (RE) implanted SiO{sub 2} on Si as a function of injected charge into the dielectric were studied. The blocking of the luminescent REO{sub X} nanoclusters from the hot exciting electrons by negative charge trapping in a defect region (shell) located in the vicinity of the REO{sub X} nanocluster/SiO{sub 2} interface is considered as the main mechanism of EL quenching for small size (up to 10 nm) REO{sub X} nanoclusters. It is suggested that the increase of the nanoclusters size results in disordering of the SiO{sub 2} matrix but in a decrease of local blocking for excitation of the luminescent centers. (copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Penning-trap mass spectrometry of radioactive, highly charged ions. Measurements of neutron-rich Rb and Sr nuclides for nuclear astrophysics and development of a novel Penning trap for cooling highly charged ions

International Nuclear Information System (INIS)

Simon, Vanessa Veronique

2012-01-01

High-precision atomic mass measurements are vital for the description of nuclear structure, investigations of nuclear astrophysical processes, and tests of fundamental symmetries. The neutron-rich A ∼ 100 region presents challenges for modeling the astrophysical r-process because of sudden nuclear shape transitions. This thesis reports on high-precision masses of short-lived neutron-rich 94,97,98 Rb and 94,97-99 Sr isotopes using the TITAN Penning-trap mass spectrometer at TRIUMF. The isotopes were charge-bred to q = 15+; uncertainties of less than 4 keV were achieved. Results deviate by up to 11σ compared to earlier measurements and extend the region of nuclear deformation observed in the A∼100 region. A parameterized r-process model network calculation shows that mass uncertainties for the elemental abundances in this region are now negligible. Although beneficial for the measurement precision, the charge breeding process leads to an increased energy spread of the ions on the order of tens of eV/q. To eliminate this drawback, a Cooler Penning Trap (CPET) has been developed as part of this thesis. The novel multi-electrode trap structure of CPET forms nested potentials to cool HCI sympathetically using either electrons or protons to increase the overall efficiency and precision of the mass measurement. The status of the off-line setup and initial commissioning experiments are presented.

Electron cooling of highly charged ions in penning traps; Elektronenkuehlung hochgeladener Ionen in Penningfallen

Energy Technology Data Exchange (ETDEWEB)

Moellers, B.

2007-02-08

For many high precision experiments with highly charged ions in ion traps it is necessary to work with low energy ions. One possibility to slow ions down to a very low energy in a trap is electron cooling, a method, which is already successfully used in storage rings to produce ion beams with high phase space density. Fast ions and a cold electron plasma are inserted into a Penning trap. The ions lose their energy due to Coulomb interaction with the electrons while they cross the plasma, the electrons are heated. The cooling time is the time, which is needed to cool an ion from a given initial energy to a low final energy. To calculate cooling times it is necessary to solve coupled differential equations for the ion energy and electron temperature. In a Penning trap the strong external magnetic field constitutes a theoretical challenge, as it influences the energy loss of the ions in an electron plasma, which can no longer be calculated analytically. In former estimates of cooling times this influence is neglected. But simulations show a dramatic decrease of the energy loss in the presence of a strong magnetic field, so it is necessary to investigate the effect of the magnetic field on the cooling times. This work presents a model to calculate cooling times, which includes both the magnetic field and the trap geometry. In a first step a simplified model without the external trap potential is developed. The energy loss of the ions in the magnetized electron plasma is calculated by an analytic approximation, which requires a numerical solution of integrals. With this model the dependence of the cooling time on different parameters like electron and ion density, magnetic field and the angle between ion velocity and magnetic field is studied for fully ionized uranium. In addition the influence of the electron heating is discussed. Another important topic in this context is the recombination between ions and electrons. The simplified model for cooling times allows to

Estimation of the spatial distribution of traps using space-charge-limited current measurements in an organic single crystal

KAUST Repository

Dacuña, Javier

2012-09-06

We used a mobility edge transport model and solved the drift-diffusion equation to characterize the space-charge-limited current of a rubrene single-crystal hole-only diode. The current-voltage characteristics suggest that current is injection-limited at high voltage when holes are injected from the bottom contact (reverse bias). In contrast, the low-voltage regime shows that the current is higher when holes are injected from the bottom contact as compared to hole injection from the top contact (forward bias), which does not exhibit injection-limited current in the measured voltage range. This behavior is attributed to an asymmetric distribution of trap states in the semiconductor, specifically, a distribution of traps located near the top contact. Accounting for a localized trap distribution near the contact allows us to reproduce the temperature-dependent current-voltage characteristics in forward and reverse bias simultaneously, i.e., with a single set of model parameters. We estimated that the local trap distribution contains 1.19×1011 cm -2 states and decays as exp(-x/32.3nm) away from the semiconductor-contact interface. The local trap distribution near one contact mainly affects injection from the same contact, hence breaking the symmetry in the charge transport. The model also provides information of the band mobility, energy barrier at the contacts, and bulk trap distribution with their corresponding confidence intervals. © 2012 American Physical Society.

New experimental initiatives using very highly charged ions from an 'electron beam ion trap'

International Nuclear Information System (INIS)

Schneider, D.

1996-01-01

A short review of the experimental program in highly-charged heavy ion physics conducted at the Lawrence Livermore National Laboratory Electron Beam Ion Trap (EBIT) facility is presented. The heavy-ion research, involving ions up to fully stripped U 92+ , includes precision x-ray spectroscopy and lifetime studies, electron impact ionization and excitation cross section measurements. The investigations of ion-surface interactions following the impact of high-Z highly charged ions on surfaces are aimed to study the neutralization dynamics effecting the ion and the response of the surface as well. (author)

Analysis of carrier transport and carrier trapping in organic diodes with polyimide-6,13-Bis(triisopropylsilylethynyl)pentacene double-layer by charge modulation spectroscopy and optical second harmonic generation measurement

Energy Technology Data Exchange (ETDEWEB)

Lim, Eunju, E-mail: elim@dankook.ac.kr, E-mail: taguchi.d.aa@m.titech.ac.jp, E-mail: iwamoto@pe.titech.ac.jp [Department of Applied Physics, Institute of Nanosensor and Biotechnology, Dankook University, Jukjeon-dong, Gyeonggi-do 448-701 (Korea, Republic of); Taguchi, Dai, E-mail: elim@dankook.ac.kr, E-mail: taguchi.d.aa@m.titech.ac.jp, E-mail: iwamoto@pe.titech.ac.jp; Iwamoto, Mitsumasa, E-mail: elim@dankook.ac.kr, E-mail: taguchi.d.aa@m.titech.ac.jp, E-mail: iwamoto@pe.titech.ac.jp [Department of Physical Electronics, Tokyo Institute of Technology 2-12-1, O-okayama, Meguro-ku, Tokyo 152-8552 (Japan)

2014-08-18

We studied the carrier transport and carrier trapping in indium tin oxide/polyimide (PI)/6,13-Bis(triisopropylsilylethynyl)pentacene (TIPS-pentacene)/Au diodes by using charge modulation spectroscopy (CMS) and time-resolved electric field induced optical second harmonic generation (TR-EFISHG) measurements. TR-EFISHG directly probes the spatial carrier behaviors in the diodes, and CMS is useful in explaining the carrier motion with respect to energy. The results clearly indicate that the injected carriers move across TIPS-pentacene thorough the molecular energy states of TIPS-pentacene and accumulate at the PI/TIPS-pentacene interface. However, some carriers are trapped in the PI layers. These findings take into account the capacitance-voltage and current-voltage characteristics of the diodes.

Preparation and cooling of magnesium ion crystals for sympathetic cooling of highly charged ions in a Penning trap

Energy Technology Data Exchange (ETDEWEB)

Murboeck, Tobias

2017-07-01

In this work, laser-cooled ion crystals containing 10{sup 3} to 10{sup 5} singly charged magnesium ions (Mg{sup +}) were prepared in a Penning trap. The properties of the ion crystals and their structure displaying long-range ordering were analyzed by various nondestructive techniques. After creation of the Mg{sup +} ions in the form of ion bunches in an external source, the ions were injected into the Penning trap where their temperature was reduced by eight orders of magnitude within seconds using a combination of buffer gas cooling and Doppler laser cooling. The achieved temperatures in the millikelvin-regime were close to the theoretical Doppler-cooling limit and sufficiently low to induce the transition to a crystal phase exhibiting long-range ordering. The structure of these mesoscopic ion crystals is in agreement with a model describing the crystal as a set of planar shells. This allows for a derivation of properties such as the charge density or the temperature of the observed crystals. For the process of combined buffer-gas and Doppler laser cooling an analytical model has been developed, which explains the time development of the temperature and the fluorescence signal in agreement with the experimental results. The external ion source for the production of singly charged magnesium ions was developed and characterized. A SIMION simulation of the ion creation and extraction process allows to describe the ion bunch structure and to increase the Mg{sup +} number by three orders of magnitude to 10{sup 6} Mg{sup +} ions per bunch. Other ion species with charge states between one (H{sup +}{sub 2}, C{sup +}, N{sup +}{sub 2}, CO{sup +}{sub 2}) and three (Ar{sup 3+}) were injected into the Mg{sup +} crystals. Ion crystals containing more than one ion species were observed with structures in agreement with the theory of centrifugal separation, which indicates sympathetic cooling of the non-fluorescing ion species. This preparation of mixed ion crystals is an

Radiation effects on the electrical properties of hafnium oxide based MOS capacitors.

Energy Technology Data Exchange (ETDEWEB)

Petrosky, J. C. (Air Force Institute of Technology, Wright-Patterson Air Force Base, OH); McClory, J. W. (Air Force Institute of Technology, Wright-Patterson Air Force Base, OH); Bielejec, Edward Salvador; Foster, J. C. (Air Force Institute of Technology, Wright-Patterson Air Force Base, OH)

2010-10-01

Hafnium oxide-based MOS capacitors were investigated to determine electrical property response to radiation environments. In situ capacitance versus voltage measurements were analyzed to identify voltage shifting as a result of changes to trapped charge with increasing dose of gamma, neutron, and ion radiation. In situ measurements required investigation and optimization of capacitor fabrication to include dicing, cleaning, metalization, packaging, and wire bonding. A top metal contact of 200 angstroms of titanium followed by 2800 angstroms of gold allowed for repeatable wire bonding and proper electrical response. Gamma and ion irradiations of atomic layer deposited hafnium oxide on silicon devices both resulted in a midgap voltage shift of no more than 0.2 V toward less positive voltages. This shift indicates recombination of radiation induced positive charge with negative trapped charge in the bulk oxide. Silicon ion irradiation caused interface effects in addition to oxide trap effects that resulted in a flatband voltage shift of approximately 0.6 V also toward less positive voltages. Additionally, no bias dependent voltage shifts with gamma irradiation and strong oxide capacitance room temperature annealing after ion irradiation was observed. These characteristics, in addition to the small voltage shifts observed, demonstrate the radiation hardness of hafnium oxide and its applicability for use in space systems.

Deep level transient spectroscopy studies of charge traps introduced into silicon by channeling ion implantation of phosphorus

International Nuclear Information System (INIS)

McCallum, J.C.; Lay, M.; Deenapanray, P.N.K.; Jagadish, C.

2002-01-01

Full text: The operating conditions of a silicon-based quantum computer are expected to place stringent requirements on the quality of the material and the processes used to make it. In the Special Research Centre for Quantum Computer Technology, ion implantation is one of the principle processing techniques under investigation for forming an ordered array of phosphorus atoms. This technique introduces defect centres in silicon which act as charge traps. Charge traps are expected to be detrimental to operation of the device. These defect centres, their dependence on ion implantation and thermal annealing conditions are being quantified using Deep Level Transient Spectroscopy (DLTS). Since the aspect ratio of the masks required for the top-down fabrication process restrict the incident ions to a range of angles in which they may undergo channeling implantation in the silicon substrate, we have examined the effect of channeling implantation on the nature and quantity of the charge traps produced. This is the first time that DLTS studies have been performed for channeling implantation of a dopant species in silicon. DLTS is well-suited to the dose regime of ∼10 11 P/cm 3 required for the quantum computer, however, a standard DLTS measurement is unable to probe the shallow depth range of ∼ 20 nm required for the P atoms (∼ 10-15 keV implantation energy). Our aim has therefore been to perform P implants in the appropriate dose regime but using higher implantation energies, ∼ 75-450 keV, where DLTS can directly identify and profile the charge traps induced by the implantation step and monitor their annealing characteristics during subsequent processing. To map the behaviour observed in this energy regime onto the low energy range required for the quantum computer we are comparing the DLTS results to damage profiles predicted by the Monte Carlo code Crystal Trim which is used in the semiconductor industry to simulate ion implantation processes in crystalline

Charge yield for cobalt-60 and 10-keV x-ray irradiations of MOS devices

International Nuclear Information System (INIS)

Shaneyfelt, M.R.; Fleetwood, D.M.; Schwank, J.R.; Hughes, K.L.

1991-01-01

In this paper the radiation response of MOS devices exposed to 60 Co and low-energy (∼10 keV) x-ray irradiation is evaluated as a function of electric field during exposure. Improved charge yield estimates are obtained for 60 Co irradiations at fields below 1 MV/cm by matching voltage shifts due to oxide-trap and interface-trap charge to an E -0.55 electric field dependence. Combining these improved charge yield estimates and calculated dose enhancement factors, the relative response of x-ray to 60 Co irradiations is accurately predicted for oxide electric fields from 0.03 MV/cm to 5.0 MV/cm. The ability to predict the relative response of x-ray to 60 Co irradiations should speed acceptance of x-ray testers as a hardness assurance tool

Electrocatalytic oxidation of ascorbic acid by [Fe(CN){sub 6}]{sup 3-/4-} redox couple electrostatically trapped in cationic N,N-dimethylaniline polymer film electropolymerized on diamond electrode

Energy Technology Data Exchange (ETDEWEB)

Roy, Protiva Rani [Department of Electronic Chemistry, Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, Mail Box G1-5, 4259 Nagatsuta, Midori-ku, Yokohama 226-8502 (Japan); Saha, Madhu Sudan [Department of Electronic Chemistry, Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, Mail Box G1-5, 4259 Nagatsuta, Midori-ku, Yokohama 226-8502 (Japan); Okajima, Takeyoshi [Department of Electronic Chemistry, Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, Mail Box G1-5, 4259 Nagatsuta, Midori-ku, Yokohama 226-8502 (Japan); Ohsaka, Takeo [Department of Electronic Chemistry, Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, Mail Box G1-5, 4259 Nagatsuta, Midori-ku, Yokohama 226-8502 (Japan)]. E-mail: ohsaka@echem.titech.ac.jp

2006-06-01

Multinegatively charged metal complex, hexacyanoferrate ([Fe(CN){sub 6}]{sup 4-}), was electrostatically trapped in the cationic polymer film of N,N-dimethylaniline (PDMA) which was electrochemically deposited on the boron-doped diamond (BDD) electrode by controlled-potential electro-oxidation of the monomer. This ferrocyanide-trapped PDMA film was used to catalyze the oxidation of ascorbic acid (AA). Increase in the oxidation current response with a negative shift of the anodic peak potential was observed at the cationic PDMA film-coated BDD (PDMA|BDD) electrode, compared with that at the bare BDD electrode. A more drastic enhancement in the oxidation peak current as well as more negative shift of oxidation potential was found at the ferrocyanide-trapped PDMA film-coated BDD ([Fe(CN){sub 6}]{sup 3-/4-}|PDMA|BDD) electrode. This [Fe(CN){sub 6}]{sup 3-/4-}|PDMA|BDD electrode can be used as an amperometric sensor of AA. Ferrocyanide, electrostatically trapped in the polymer film shows more electrocatalytic activity than that coordinatively attached to the polymer film or dissolved in the solution phase. The electrocatalytic current depends on the surface coverage of ferricyanide, {gamma} {sub Fe}, within the polymer film. Diffusion coefficient (D) of AA in the solution was estimated by rotating disk electrode voltammetry: D = (5.8 {+-} 0.3) x 10{sup -6} cm{sup 2} s{sup -1}. The second-order rate constant for the catalytic oxidation of AA by ferricyanide was also estimated to be 9.0 x 10{sup 4} M{sup -1} s{sup -1}. In the hydrodynamic amperometry using the [Fe(CN){sub 6}]{sup 3-/4-}|PDMA|BDD electrode, a successive addition of 1 {mu}M AA caused the successive increase in current response with equal amplitude and the sensitivity was calculated as 0.233 {mu}A cm{sup -2} {mu}M{sup -1}.

Developing Antimatter Containment Technology: Modeling Charged Particle Oscillations in a Penning-Malmberg Trap

Science.gov (United States)

Chakrabarti, S.; Martin, J. J.; Pearson, J. B.; Lewis, R. A.

2003-01-01

The NASA MSFC Propulsion Research Center (PRC) is conducting a research activity examining the storage of low energy antiprotons. The High Performance Antiproton Trap (HiPAT) is an electromagnetic system (Penning-Malmberg design) consisting of a 4 Tesla superconductor, a high voltage confinement electrode system, and an ultra high vacuum test section; designed with an ultimate goal of maintaining charged particles with a half-life of 18 days. Currently, this system is being experimentally evaluated using normal matter ions which are cheap to produce and relatively easy to handle and provide a good indication of overall trap behavior, with the exception of assessing annihilation losses. Computational particle-in-cell plasma modeling using the XOOPIC code is supplementing the experiments. Differing electrode voltage configurations are employed to contain charged particles, typically using flat, modified flat and harmonic potential wells. Ion cloud oscillation frequencies are obtained experimentally by amplification of signals induced on the electrodes by the particle motions. XOOPIC simulations show that for given electrode voltage configurations, the calculated charged particle oscillation frequencies are close to experimental measurements. As a two-dimensional axisymmetric code, XOOPIC cannot model azimuthal plasma variations, such as those induced by radio-frequency (RF) modulation of the central quadrupole electrode in experiments designed to enhance ion cloud containment. However, XOOPIC can model analytically varying electric potential boundary conditions and particle velocity initial conditions. Application of these conditions produces ion cloud axial and radial oscillation frequency modes of interest in achieving the goal of optimizing HiPAT for reliable containment of antiprotons.

Trap assisted space charge conduction in p-NiO/n-ZnO heterojunction diode

International Nuclear Information System (INIS)

Tyagi, Manisha; Tomar, Monika; Gupta, Vinay

2015-01-01

Highlights: • p-NiO/n-ZnO heterojunction diode with enhanced junction parameters has been prepared. • Temperature dependent I–V throw insight into the involved conduction mechanism. • SCLC with exponential trap distribution was found to be the dominant mechanism. • C–V measurement at different frequencies support the presence of traps. - Abstract: The development of short-wavelength p–n junction is essentially important for the realization of transparent electronics for next-generation optoelectronic devices. In the present work, a p–n heterojunction diode based on p-NiO/n-ZnO has been prepared under the optimised growth conditions exhibiting improved electrical and junction parameters. The fabricated heterojunction gives typical current–voltage (I–V) characteristics with good rectifying behaviour (rectification ratio ≈ 10 4 at 2 V). The temperature dependent current–voltage characteristics of heterojunction diode have been studied and origin of conduction mechanism is identified. The space-charge limited conduction with exponential trap distribution having deep level trap is found to be the dominant conduction mechanism in the fabricated p–n heterojunction diode. The conduction and valence band discontinuities for NiO/ZnO heterostructure have been determined from the capacitance–voltage (C–V) measurements

Modeling low-dose-rate effects in irradiated bipolar-base oxides

International Nuclear Information System (INIS)

Graves, R.J.; Cirba, C.R.; Schrimpf, R.D.; Milanowski, R.J.; Saigne, F.; Michez, A.; Fleetwood, D.M.; Witczak, S.C.

1997-02-01

A physical model is developed to quantify the contribution of oxide-trapped charge to enhanced low-dose-rate gain degradation in BJTs. Simulations show that space charge limited transport is partially responsible for the low-dose-rate enhancement

Influence of the charge trap density distribution in a gate insulator on the positive-bias stress instability of amorphous indium-gallium-zinc oxide thin-film transistors

Energy Technology Data Exchange (ETDEWEB)

Kim, Eungtaek; Kim, Choong-Ki; Lee, Myung Keun; Bang, Tewook; Choi, Yang-Kyu; Choi, Kyung Cheol, E-mail: shkp@kaist.ac.kr, E-mail: kyungcc@kaist.ac.kr [School of Electrical Engineering, KAIST, Daejeon 34141 (Korea, Republic of); Park, Sang-Hee Ko, E-mail: shkp@kaist.ac.kr, E-mail: kyungcc@kaist.ac.kr [Department of Material Science and Engineering, KAIST, Daejeon 34141 (Korea, Republic of)

2016-05-02

We investigated the positive-bias stress (PBS) instability of thin film transistors (TFTs) composed of different types of first-gate insulators, which serve as a protection layer of the active surface. Two different deposition methods, i.e., the thermal atomic layer deposition (THALD) and plasma-enhanced ALD (PEALD) of Al{sub 2}O{sub 3}, were applied for the deposition of the first GI. When THALD was used to deposit the GI, amorphous indium-gallium-zinc oxide (a-IGZO) TFTs showed superior stability characteristics under PBS. For example, the threshold voltage shift (ΔV{sub th}) was 0 V even after a PBS time (t{sub stress}) of 3000 s under a gate voltage (V{sub G}) condition of 5 V (with an electrical field of 1.25 MV/cm). On the other hand, when the first GI was deposited by PEALD, the ΔV{sub th} value of a-IGZO TFTs was 0.82 V after undergoing an identical amount of PBS. In order to interpret the disparate ΔV{sub th} values resulting from PBS quantitatively, the average oxide charge trap density (N{sub T}) in the GI and its spatial distribution were investigated through low-frequency noise characterizations. A higher N{sub T} resulted during in the PEALD type GI than in the THALD case. Specifically, the PEALD process on a-IGZO layer surface led to an increasing trend of N{sub T} near the GI/a-IGZO interface compared to bulk GI owing to oxygen plasma damage on the a-IGZO surface.

Influence of the charge trap density distribution in a gate insulator on the positive-bias stress instability of amorphous indium-gallium-zinc oxide thin-film transistors

International Nuclear Information System (INIS)

Kim, Eungtaek; Kim, Choong-Ki; Lee, Myung Keun; Bang, Tewook; Choi, Yang-Kyu; Choi, Kyung Cheol; Park, Sang-Hee Ko

2016-01-01

We investigated the positive-bias stress (PBS) instability of thin film transistors (TFTs) composed of different types of first-gate insulators, which serve as a protection layer of the active surface. Two different deposition methods, i.e., the thermal atomic layer deposition (THALD) and plasma-enhanced ALD (PEALD) of Al_2O_3, were applied for the deposition of the first GI. When THALD was used to deposit the GI, amorphous indium-gallium-zinc oxide (a-IGZO) TFTs showed superior stability characteristics under PBS. For example, the threshold voltage shift (ΔV_t_h) was 0 V even after a PBS time (t_s_t_r_e_s_s) of 3000 s under a gate voltage (V_G) condition of 5 V (with an electrical field of 1.25 MV/cm). On the other hand, when the first GI was deposited by PEALD, the ΔV_t_h value of a-IGZO TFTs was 0.82 V after undergoing an identical amount of PBS. In order to interpret the disparate ΔV_t_h values resulting from PBS quantitatively, the average oxide charge trap density (N_T) in the GI and its spatial distribution were investigated through low-frequency noise characterizations. A higher N_T resulted during in the PEALD type GI than in the THALD case. Specifically, the PEALD process on a-IGZO layer surface led to an increasing trend of N_T near the GI/a-IGZO interface compared to bulk GI owing to oxygen plasma damage on the a-IGZO surface.

Effect of re-oxidation annealing process on the SiO2/SiC interface characteristics

International Nuclear Information System (INIS)

Yan Hongli; Jia Renxu; Tang Xiaoyan; Song Qingwen; Zhang Yuming

2014-01-01

The effect of the different re-oxidation annealing (ROA) processes on the SiO 2 /SiC interface characteristics has been investigated. With different annealing processes, the flat band voltage, effective dielectric charge density and interface trap density are obtained from the capacitance—voltage curves. It is found that the lowest interface trap density is obtained by the wet-oxidation annealing process at 1050 °C for 30 min, while a large number of effective dielectric charges are generated. The components at the SiO 2 /SiC interface are analyzed by X-ray photoelectron spectroscopy (XPS) testing. It is found that the effective dielectric charges are generated due to the existence of the C and H atoms in the wet-oxidation annealing process. (semiconductor technology)

Impacts of oxidants in atomic layer deposition method on Al2O3/GaN interface properties

Science.gov (United States)

Taoka, Noriyuki; Kubo, Toshiharu; Yamada, Toshikazu; Egawa, Takashi; Shimizu, Mitsuaki

2018-01-01

The electrical interface properties of GaN metal-oxide-semiconductor (MOS) capacitors with an Al2O3 gate insulator formed by atomic layer deposition method using three kinds of oxidants were investigated by the capacitance-voltage technique, Terman method, and conductance method. We found that O3 and the alternate supply of H2O and O3 (AS-HO) are effective for reducing the interface trap density (D it) at the energy range of 0.15 to 0.30 eV taking from the conduction band minimum. On the other hand, we found that surface potential fluctuation (σs) induced by interface charges for the AS-HO oxidant is much larger than that for a Si MOS capacitor with a SiO2 layer formed by chemical vapor deposition despite the small D it values for the AS-HO oxidant compared with the Si MOS capacitor. This means that the total charged center density including the fixed charge density, charged slow trap density, and charged interface trap density for the GaN MOS capacitor is higher than that for the Si MOS capacitor. Therefore, σs has to be reduced to improve the performances and reliability of GaN devices with the Al2O3/GaN interfaces.

Charge generation and trapping in bisphenol-A-polycarbonate/N-isopropylcarbazole mixture: A study by electron bombardment-induced conductivity

International Nuclear Information System (INIS)

Santos, S.; Caraballo, D.

2007-01-01

Electron bombardment-induced conductivity measurements were carried out on cast films of N-isopropylcarbazole (NIPC) dispersed into an amorphous matrix of bisphenol-A-polycarbonate. The charge generation was studied by estimating the hole yield (g), the fraction of charge escaping recombination, as a function of electric field and concentration of NIPC at room temperature. The hole yield, besides increasing by increasing the content of NIPC, was observed to increase with the electric field in the manner predicted by the Onsager theory of geminate recombination. Deep trapping levels were studied by filling under electron bombardment and observing transients. The deep traps were neutral in nature with a concentration on the order of 8.0x10 14 cm -3 , which was low enough not to degrade transport under normal conditions

High-Performance Nonvolatile Organic Field-Effect Transistor Memory Based on Organic Semiconductor Heterostructures of Pentacene/P13/Pentacene as Both Charge Transport and Trapping Layers.

Science.gov (United States)

Li, Wen; Guo, Fengning; Ling, Haifeng; Zhang, Peng; Yi, Mingdong; Wang, Laiyuan; Wu, Dequn; Xie, Linghai; Huang, Wei

2017-08-01

Nonvolatile organic field-effect transistor (OFET) memory devices based on pentacene/ N , N '-ditridecylperylene-3,4,9,10-tetracarboxylic diimide (P13)/pentacene trilayer organic heterostructures have been proposed. The discontinuous n-type P13 embedded in p-type pentacene layers can not only provide electrons in the semiconductor layer that facilitates electron trapping process; it also works as charge trapping sites, which is attributed to the quantum well-like pentacene/P13/pentacene organic heterostructures. The synergistic effects of charge trapping in the discontinuous P13 and the charge-trapping property of the poly(4-vinylphenol) (PVP) layer remarkably improve the memory performance. In addition, the trilayer organic heterostructures have also been successfully applied to multilevel and flexible nonvolatile memory devices. The results provide a novel design strategy to achieve high-performance nonvolatile OFET memory devices and allow potential applications for different combinations of various organic semiconductor materials in OFET memory.

Aspirin degradation in surface-charged TEMPO-oxidized mesoporous crystalline nanocellulose.

Science.gov (United States)

Carlsson, Daniel O; Hua, Kai; Forsgren, Johan; Mihranyan, Albert

2014-01-30

TEMPO-mediated surface oxidation of mesoporous highly crystalline Cladophora cellulose was used to introduce negative surface charges onto cellulose nanofibrils without significantly altering other structural characteristics. This enabled the investigation of the influence of mesoporous nanocellulose surface charges on aspirin chemical stability to be conducted. The negative surface charges (carboxylate content 0.44±0.01 mmol/g) introduced on the mesoporous crystalline nanocellulose significantly accelerated aspirin degradation, compared to the starting material which had significantly less surface charge (0.06±0.01 mmol/g). This effect followed from an increased aspirin amorphisation ability in mesopores of the oxidized nanocellulose. These results highlight the importance of surface charges in formulating nanocellulose for drug delivery. Copyright © 2013 Elsevier B.V. All rights reserved.

Trap assisted space charge conduction in p-NiO/n-ZnO heterojunction diode

Energy Technology Data Exchange (ETDEWEB)

Tyagi, Manisha [Department of Physics and Astrophysics, University of Delhi, Delhi-110007 (India); Tomar, Monika [Physics department, Miranda House, University of Delhi, Delhi-110007 (India); Gupta, Vinay, E-mail: drguptavinay@gmail.com [Department of Physics and Astrophysics, University of Delhi, Delhi-110007 (India)

2015-06-15

Highlights: • p-NiO/n-ZnO heterojunction diode with enhanced junction parameters has been prepared. • Temperature dependent I–V throw insight into the involved conduction mechanism. • SCLC with exponential trap distribution was found to be the dominant mechanism. • C–V measurement at different frequencies support the presence of traps. - Abstract: The development of short-wavelength p–n junction is essentially important for the realization of transparent electronics for next-generation optoelectronic devices. In the present work, a p–n heterojunction diode based on p-NiO/n-ZnO has been prepared under the optimised growth conditions exhibiting improved electrical and junction parameters. The fabricated heterojunction gives typical current–voltage (I–V) characteristics with good rectifying behaviour (rectification ratio ≈ 10{sup 4} at 2 V). The temperature dependent current–voltage characteristics of heterojunction diode have been studied and origin of conduction mechanism is identified. The space-charge limited conduction with exponential trap distribution having deep level trap is found to be the dominant conduction mechanism in the fabricated p–n heterojunction diode. The conduction and valence band discontinuities for NiO/ZnO heterostructure have been determined from the capacitance–voltage (C–V) measurements.

Trap-induced photoconductivity in singlet fission pentacene diodes

Energy Technology Data Exchange (ETDEWEB)

Qiao, Xianfeng, E-mail: qiaoxianfeng@hotmail.com; Zhao, Chen; Chen, Bingbing; Luan, Lin [WuHan National Laboratory for Optoelectronics and School of Optical and Electronic Information, Huazhong University of Science and Technology, Wu Han 430074 (China)

2014-07-21

This paper reports a trap-induced photoconductivity in ITO/pentacene/Al diodes by using current-voltage and magneto-conductance measurements. The comparison of photoconductivity between pentacene diodes with and without trap clearly shows that the traps play a critical role in generating photoconductivity. It shows that no observable photoconductivity is detected for trap-free pentacene diodes, while significant photoconductivity is observed in diodes with trap. This is because the initial photogenerated singlet excitons in pentacene can rapidly split into triplet excitons with higher binding energy prior to dissociating into free charge carriers. The generated triplet excitons react with trapped charges to release charge-carriers from traps, leading to a trap-induced photoconductivity in the single-layer pentacene diodes. Our studies elucidated the formation mechanisms of photoconductivity in pentacene diodes with extremely fast singlet fission rate.

A nanogravimmetric investigation of the charging processes on ruthenium oxide thin films and their effect on methanol oxidation

International Nuclear Information System (INIS)

Santos, M.C.; Cogo, L.; Tanimoto, S.T.; Calegaro, M.L.; Bulhoes, L.O.S

2006-01-01

The charging processes and methanol oxidation that occur during the oxidation-reduction cycles in a ruthenium oxide thin film electrode (deposited by the sol-gel method on Pt covered quartz crystals) were investigated by using cyclic voltammetry, chronoamperometry and electrochemical quartz crystal nanobalance techniques. The ruthenium oxide rutile phase structure was determined by X-ray diffraction analysis. The results obtained during the charging of rutile ruthenium oxide films indicate that in the anodic sweep the transition from Ru(II) to Ru(VI) occurs followed by proton de-intercalation. In the cathodic sweep, electron injection occurs followed by proton intercalation, leading to Ru(II). The proton intercalation/de-intercalation processes can be inferred from the mass/charge relationship which gives a slope close to 1 g mol -1 (multiplied by the Faraday constant) corresponding to the molar mass of hydrogen. From the chronoamperometric measurements, charge and mass saturation of the RuO 2 thin films was observed (440 ng cm -2 ) during the charging processes, which is related to the total number of active sites in these films. Using the electrochemical quartz crystal nanobalance technique to study the methanol oxidation reaction at these films was possible to demonstrate that bulk oxidation occurs without the formation of strongly adsorbed intermediates such as CO ads , demonstrating that Pt electrodes modified by ruthenium oxide particles can be promising catalysts for the methanol oxidation as already shown in the literature

The Role of Electron Transport and Trapping in MOS Total-Dose Modeling

International Nuclear Information System (INIS)

Fleetwood, D.M.; Winokur, P.S.; Riewe, L.C.; Flament, O.; Paillet, P.; Leray, J.L.

1999-01-01

Radiation-induced hole and electron transport and trapping are fundamental to MOS total-dose models. Here we separate the effects of electron-hole annihilation and electron trapping on the neutralization of radiation-induced charge during switched-bias irradiation for hard and soft oxides, via combined thermally stimulated current (TSC) and capacitance-voltage measurements. We also show that present total-dose models cannot account for the thermal stability of deeply trapped electrons near the Si/SiO 2 interface, or the inability of electrons in deep or shallow traps to contribute to TSC at positive bias following (1) room-temperature, (2) high-temperature, or (3) switched-bias irradiation. These results require revisions of modeling parameters and boundary conditions for hole and electron transport in SiO 2 . The nature of deep and shallow electron traps in the near-interfacial SiO 2 is discussed

Negative charge induced degradation of PMOSFETs with BF2-implanted p+-poly gate

International Nuclear Information System (INIS)

Lu, C.Y.; Sung, J.M.

1989-01-01

A new degradation phenomenon on thin gate oxide PMOS-FETs with BF 2 implanted p + -poly gate has been demonstrated and investigated. The cause of this type of degradation is a combination of the boron penetration through the gate oxide and charge trap generation due to the presence of fluorine in the gate oxide and some other processing-induced effects. The negative charge-induced degradation other than enhanced boron diffusion has been studied in detail here. The impact of this process-sensitive p + -poly gate structure on deep submicron CMOS process integration has been discussed. (author)

Modeling space-charge-limited currents in organic semiconductors: Extracting trap density and mobility

KAUST Repository

Dacuña, Javier

2011-11-28

We have developed and have applied a mobility edge model that takes drift and diffusion currents to characterize the space-charge-limited current in organic semiconductors into account. The numerical solution of the drift-diffusion equation allows the utilization of asymmetric contacts to describe the built-in potential within the device. The model has been applied to extract information of the distribution of traps from experimental current-voltage measurements of a rubrene single crystal from Krellner showing excellent agreement across several orders of magnitude in the current. Although the two contacts are made of the same metal, an energy offset of 580 meV between them, ascribed to differences in the deposition techniques (lamination vs evaporation) was essential to correctly interpret the shape of the current-voltage characteristics at low voltage. A band mobility of 0.13cm 2V-1s-1 for holes is estimated, which is consistent with transport along the long axis of the orthorhombic unit cell. The total density of traps deeper than 0.1 eV was 2.2×1016cm -3. The sensitivity analysis and error estimation in the obtained parameters show that it is not possible to accurately resolve the shape of the trap distribution for energies deeper than 0.3 eV or shallower than 0.1 eV above the valence-band edge. The total number of traps deeper than 0.3 eV, however, can be estimated. Contact asymmetry and the diffusion component of the current play an important role in the description of the device at low bias and are required to obtain reliable information about the distribution of deep traps. © 2011 American Physical Society.

Interface Trap Profiles in 4H- and 6H-SiC MOS Capacitors with Nitrogen- and Phosphorus-Doped Gate Oxides

Science.gov (United States)

Jiao, C.; Ahyi, A. C.; Dhar, S.; Morisette, D.; Myers-Ward, R.

2017-04-01

We report results on the interface trap density ( D it) of 4H- and 6H-SiC metal-oxide-semiconductor (MOS) capacitors with different interface chemistries. In addition to pure dry oxidation, we studied interfaces formed by annealing thermal oxides in NO or POCl3. The D it profiles, determined by the C- ψ s method, show that, although the as-oxidized 4H-SiC/SiO2 interface has a much higher D it profile than 6H-SiC/SiO2, after postoxidation annealing (POA), both polytypes maintain comparable D it near the conduction band edge for the gate oxides incorporated with nitrogen or phosphorus. Unlike most conventional C- V- or G- ω-based methods, the C- ψ s method is not limited by the maximum probe frequency, therefore taking into account the "fast traps" detected in previous work on 4H-SiC. The results indicate that such fast traps exist near the band edge of 6H-SiC also. For both polytypes, we show that the total interface trap density ( N it) integrated from the C- ψ s method is several times that obtained from the high-low method. The results suggest that the detected fast traps have a detrimental effect on electron transport in metal-oxide-semiconductor field-effect transistor (MOSFET) channels.

Investigation of two-frequency Paul traps for antihydrogen production

Energy Technology Data Exchange (ETDEWEB)

Leefer, Nathan; Krimmel, Kai, E-mail: kkrimmel@students.uni-mainz.de [Helmholtz-Institut Mainz (Germany); Bertsche, William [University of Manchester (United Kingdom); Budker, Dmitry [Helmholtz-Institut Mainz (Germany); Fajans, Joel [University of California at Berkeley, Department of Physics (United States); Folman, Ron [Ben-Gurion University of the Negev, Department of Physics (Israel); Häffner, Hartmut [University of California at Berkeley, Department of Physics (United States); Schmidt-Kaler, Ferdinand [Helmholtz-Institut Mainz (Germany)

2017-11-15

Radio-frequency (rf) Paul traps operated with multifrequency rf trapping potentials provide the ability to independently confine charged particle species with widely different charge-to-mass ratios. In particular, these traps may find use in the field of antihydrogen recombination, allowing antiproton and positron clouds to be trapped and confined in the same volume without the use of large superconducting magnets. We explore the stability regions of two-frequency Paul traps and perform numerical simulations of small samples of multispecies charged-particle mixtures of up to twelve particles that indicate the promise of these traps for antihydrogen recombination.

Spin Trapping Radicals from Lipid Oxidation in Liposomes in the Presence of Flavonoids

International Nuclear Information System (INIS)

Arshad, N.

2013-01-01

Interactions of four structurally related flavonoids - quercetin, rutin, morin and catechin with peroxyl radicals using liposome/N-tert-butyl-alpha-phenylnitrone (PBN) and liposome -(4-pyridyl-N-oxide)-N-tert-butylnitrone (POBN)-spin trap systems have been studied through spin trapping ESR. Results obtained were different from that of conjugated diene analysis experiments, where lag phases indicated radical scavenging activity of all the flavonoids. No clear lag phase was observed in ESR experiments under same conditions. In the presence of flavonoids decreasing ESR signals of spin adducts in PBN, while no or negligibly smaller spin adducts with POBN system were observed which may be attributed to the possibility that spin traps interacted with free radicals. Experiments with buffer/spin trap systems without liposome revealed that spin adducts were only stable with catechin and destroyed by quercetin, rutin and morin in buffer/spin trap systems. These results further assured that quercetin, rutin and morin not only interacted with peroxyl radicals but also with spin adducts. (author)

Electrodeposited reduced-graphene oxide/cobalt oxide electrodes for charge storage applications

Energy Technology Data Exchange (ETDEWEB)

García-Gómez, A. [CQE, Instituto Superior Técnico, Universidade de Lisboa, Lisboa (Portugal); Eugénio, S., E-mail: s.eugenio@tecnico.ulisboa.pt [CQE, Instituto Superior Técnico, Universidade de Lisboa, Lisboa (Portugal); Duarte, R.G. [CQE, Instituto Superior Técnico, Universidade de Lisboa, Lisboa (Portugal); ESTBarreiro, Instituto Politécnico de Setúbal, Setúbal (Portugal); Silva, T.M. [CQE, Instituto Superior Técnico, Universidade de Lisboa, Lisboa (Portugal); ADEM, GI-MOSM, ISEL-Instituto Superior de Engenharia de Lisboa, Instituto Politécnico de Lisboa, Lisboa (Portugal); Carmezim, M.J. [CQE, Instituto Superior Técnico, Universidade de Lisboa, Lisboa (Portugal); ESTSetúbal, Instituto Politécnico de Setúbal, Setúbal (Portugal); Montemor, M.F. [CQE, Instituto Superior Técnico, Universidade de Lisboa, Lisboa (Portugal)

2016-09-30

Highlights: • Electrochemically reduced graphene/CoOx composites were successfully produced by electrodeposition. • The composite material presents a specific capacitance of about 430 F g{sup −1}. • After heat treatment, the capacitance retention of the composite was 76% after 3500 cycles. - Abstract: In the present work, electrochemically reduced-graphene oxide/cobalt oxide composites for charge storage electrodes were prepared by a one-step pulsed electrodeposition route on stainless steel current collectors and after that submitted to a thermal treatment at 200 °C. A detailed physico-chemical characterization was performed by X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM) and Raman spectroscopy. The electrochemical response of the composite electrodes was studied by cyclic voltammetry and charge-discharge curves and related to the morphological and phase composition changes induced by the thermal treatment. The results revealed that the composites were promising materials for charge storage electrodes for application in redox supercapacitors, attaining specific capacitances around 430 F g{sup −1} at 1 A g{sup −1} and presenting long-term cycling stability.

Relation between microstructure and dielectric breakdown in the case of aluminous ceramics (SEMM method); Comportement d'alumines face a l'injection de charges. Relation microstructure - claquage dielectrique - mesure des charges d'influence (methode SEMM)

Energy Technology Data Exchange (ETDEWEB)

Liebault, J.

1999-02-01

The dielectric breakdown is strongly linked to the injection and the accumulation of charges in a non-conducting material. The physics of charged insulators proposes mechanisms of trapping and transport of charges in aluminium oxides by considering defects as localization sources of charges and of energy. In order to measure the influence of defects on dielectric breakdown, various aluminous ceramics have been elaborated. The nature and the quantity of defects have been characterized by the nature and the rate of impurities, by porosity, by the quantity of grain boundaries and by the presence and distribution of secondary phases. These materials have undergone breakdown tests. The dielectric rigidity depends strongly on the nature and the distribution of crystallographic defects (vacancy, interstitial ions and dislocation), on the other hand porosity below 5% has no influence. The doping of an alumina ceramic containing less than 100 ppm of impurities implies a diminution of its dielectric rigidity. The measurement of the SEMM (scanning electron microscopy mirror) effect allows the characterization of insulating materials. This method permits the evaluation of the ability for materials to trap charges, it gives information about the charge kinetic of trapping, charge localization and the energy levels of traps. (A.C.)

GaAs metal-oxide-semiconductor based non-volatile flash memory devices with InAs quantum dots as charge storage nodes

Energy Technology Data Exchange (ETDEWEB)

Islam, Sk Masiul, E-mail: masiulelt@gmail.com; Chowdhury, Sisir; Sarkar, Krishnendu; Nagabhushan, B.; Banerji, P. [Materials Science Centre, Indian Institute of Technology, Kharagpur 721 302 (India); Chakraborty, S. [Applied Materials Science Division, Saha Institute of Nuclear Physics, 1/AF Bidhannagar, Sector-I, Kolkata 700 064 (India); Mukherjee, Rabibrata [Department of Chemical Engineering, Indian Institute of Technology, Kharagpur 721302 (India)

2015-06-24

Ultra-thin InP passivated GaAs metal-oxide-semiconductor based non-volatile flash memory devices were fabricated using InAs quantum dots (QDs) as charge storing elements by metal organic chemical vapor deposition technique to study the efficacy of the QDs as charge storage elements. The grown QDs were embedded between two high-k dielectric such as HfO{sub 2} and ZrO{sub 2}, which were used for tunneling and control oxide layers, respectively. The size and density of the QDs were found to be 5 nm and 1.8×10{sup 11} cm{sup −2}, respectively. The device with a structure Metal/ZrO{sub 2}/InAs QDs/HfO{sub 2}/GaAs/Metal shows maximum memory window equivalent to 6.87 V. The device also exhibits low leakage current density of the order of 10{sup −6} A/cm{sup 2} and reasonably good charge retention characteristics. The low value of leakage current in the fabricated memory device is attributed to the Coulomb blockade effect influenced by quantum confinement as well as reduction of interface trap states by ultra-thin InP passivation on GaAs prior to HfO{sub 2} deposition.

Self-Consistent Approach to Global Charge Neutrality in Electrokinetics: A Surface Potential Trap Model

Directory of Open Access Journals (Sweden)

Li Wan

2014-03-01

Full Text Available In this work, we treat the Poisson-Nernst-Planck (PNP equations as the basis for a consistent framework of the electrokinetic effects. The static limit of the PNP equations is shown to be the charge-conserving Poisson-Boltzmann (CCPB equation, with guaranteed charge neutrality within the computational domain. We propose a surface potential trap model that attributes an energy cost to the interfacial charge dissociation. In conjunction with the CCPB, the surface potential trap can cause a surface-specific adsorbed charge layer σ. By defining a chemical potential μ that arises from the charge neutrality constraint, a reformulated CCPB can be reduced to the form of the Poisson-Boltzmann equation, whose prediction of the Debye screening layer profile is in excellent agreement with that of the Poisson-Boltzmann equation when the channel width is much larger than the Debye length. However, important differences emerge when the channel width is small, so the Debye screening layers from the opposite sides of the channel overlap with each other. In particular, the theory automatically yields a variation of σ that is generally known as the “charge regulation” behavior, attendant with predictions of force variation as a function of nanoscale separation between two charged surfaces that are in good agreement with the experiments, with no adjustable or additional parameters. We give a generalized definition of the ζ potential that reflects the strength of the electrokinetic effect; its variations with the concentration of surface-specific and surface-nonspecific salt ions are shown to be in good agreement with the experiments. To delineate the behavior of the electro-osmotic (EO effect, the coupled PNP and Navier-Stokes equations are solved numerically under an applied electric field tangential to the fluid-solid interface. The EO effect is shown to exhibit an intrinsic time dependence that is noninertial in its origin. Under a step-function applied

Effect of trap states and microstructure on charge carrier conduction mechanism through semicrystalline poly(vinyl alcohol) granular film

Science.gov (United States)

Das, A. K.; Bhowmik, R. N.; Meikap, A. K.

2018-05-01

We report a comprehensive study on hysteresis behaviour of current-voltage characteristic and impedance spectroscopy of granular semicrystalline poly(vinyl alcohol) (PVA) film. The charge carrier conduction mechanism and charge traps of granular PVA film by measuring and analyzing the temperature dependent current-voltage characteristic indicate a bi-stable electronic state in the film. A sharp transformation of charge carrier conduction mechanism from Poole-Frenkel emission to space charge limited current mechanism has been observed. An anomalous oscillatory behaviour of current has been observed due to electric pulse effect on the molecular chain of the polymer. Effect of microstructure on charge transport mechanism has been investigated from impedance spectroscopy analysis. An equivalent circuit model has been proposed to explain the result.

Mechanism of phosphorus passivation of near-interface oxide traps in 4H–SiC MOS devices investigated by CCDLTS and DFT calculation

Science.gov (United States)

Jayawardena, Asanka; Shen, X.; Mooney, P. M.; Dhar, Sarit

2018-06-01

Interfacial charge trapping in 4H–SiC MOS capacitors with P doped SiO2 or phospho-silicate glass (PSG) as a gate dielectric has been investigated with temperature dependent capacitance–voltage measurements and constant capacitance deep level transient spectroscopy (CCDLTS) measurements. The measurements indicate that P doping in the dielectric results in significant reduction of near-interface electron traps that have energy levels within 0.5 eV of the 4H–SiC conduction band edge. Extracted trap densities confirm that the phosphorus induced near-interface trap reduction is significantly more effective than interfacial nitridation, which is typically used for 4H–SiC MOSFET processing. The CCDLTS measurements reveal that the two broad near-interface trap peaks, named ‘O1’ and ‘O2’, with activation energies around 0.15 eV and 0.4 eV below the 4H–SiC conduction band that are typically observed in thermal oxides on 4H–SiC, are also present in PSG devices. Previous atomic scale ab initio calculations suggested these O1 and O2 traps to be carbon dimers substituted for oxygen dimers (CO=CO) and interstitial Si (Sii) in SiO2, respectively. Theoretical considerations in this work suggest that the presence of P in the near-interfacial region reduces the stability of the CO=CO defects and reduces the density of Sii defects through the network restructuring. Qualitative comparison of results in this work and reported work suggest that the O1 and O2 traps in SiO2/4H–SiC MOS system negatively impact channel mobility in 4H–SiC MOSFETs.

Myofibrillar protein oxidation affects filament charges, aggregation and water-holding

NARCIS (Netherlands)

Bao, Yulong; Boeren, Sjef; Ertbjerg, Per

2018-01-01

Hypochlorous acid (HClO) is a strong oxidant that is able to mediate protein oxidation. In order to study the effect of oxidation on charges, aggregation and water-holding of myofibrillar proteins, extracted myofibrils were oxidized by incubation with different concentrations of HClO (0, 1, 5,

Extreme ultra-violet emission spectroscopy of highly charged gadolinium ions with an electron beam ion trap

International Nuclear Information System (INIS)

Ohashi, Hayato; Nakamura, Nobuyuki; Sakaue, Hiroyuki A

2013-01-01

We present extreme ultra-violet emission spectra of highly charged gadolinium ions obtained with an electron beam ion trap at electron energies of 0.53–1.51 keV. The electron energy dependence of the spectra in the 5.7–11.3 nm range is compared with calculation with the flexible atomic code. (paper)

Severe signal loss in diamond beam loss monitors in high particle rate environments by charge trapping in radiation-induced defects

CERN Document Server

Kassel, Florian; Dabrowski, Anne; de Boer, Wim

2016-01-01

The beam condition monitoring leakage (BCML) system is a beam monitoring device in the compact muon solenoid (CMS) experiment at the large hadron collider (LHC). As detectors 32 poly-crystalline (pCVD) diamond sensors are positioned in rings around the beam pipe. Here, high particle rates occur from the colliding beams scattering particles outside the beam pipe. These particles cause defects, which act as traps for the ionization, thus reducing the charge collection efficiency (CCE). However, the loss in CCE was much more severe than expected from low rate laboratory measurements and simulations, especially in single-crystalline (sCVD) diamonds, which have a low initial concentration of defects. The reason why in real experiments the CCE is much worse than in laboratory experiments is related to the ionization rate. At high particle rates the trapping rate of the ionization is so high compared with the detrapping rate, that space charge builds up. This space charge reduces locally the internal electric field,...

Stability of trapped electrons in SiO2

International Nuclear Information System (INIS)

Fleetwood, D.M.; Winokur, P.S.; Flament, O.; Leray, J.L.

1998-01-01

Electron trapping near the Si/SiO 2 interface plays a crucial role in mitigating the response of MOS devices to ionizing radiation or high-field stress. These electrons offset positive charge due to trapped holes, and can be present at densities exceeding 10 12 cm -2 in the presence of a similar density of trapped positive charge. The nature of the defects that serve as hosts for trapped electrons in the near-interfacial SiO 2 is presently unknown, although there is compelling evidence that these defects are often intimately associated with trapped holes. This association is depicted most directly in the model of Lelis et al., which suggests that trapped electrons and holes occupy opposite sides of a compensated E center in SiO 2 . Charge exchange between electron traps and the Si can occur over a wide range of time scales, depending on the trap depth and location relative to the Si/SiO 2 interface. Here the authors report a detailed study of the stability of electron traps associated with trapped holes near the Si/SiO 2 interface

Impact of continuing scaling on the device performance of 3D cylindrical junction-less charge trapping memory

International Nuclear Information System (INIS)

Li Xinkai; Huo Zongliang; Jin Lei; Jiang Dandan; Hong Peizhen; Xu Qiang; Tang Zhaoyun; Li Chunlong; Ye Tianchun

2015-01-01

This work presents a comprehensive analysis of 3D cylindrical junction-less charge trapping memory device performance regarding continuous scaling of the structure dimensions. The key device performance, such as program/erase speed, vertical charge loss, and lateral charge migration under high temperature are intensively studied using the Sentaurus 3D device simulator. Although scaling of channel radius is beneficial for operation speed improvement, it leads to a retention challenge due to vertical leakage, especially enhanced charge loss through TPO. Scaling of gate length not only decreases the program/erase speed but also leads to worse lateral charge migration. Scaling of spacer length is critical for the interference of adjacent cells and should be carefully optimized according to specific cell operation conditions. The gate stack shape is also found to be an important factor affecting the lateral charge migration. Our results provide guidance for high density and high reliability 3D CTM integration. (paper)

Physics with Trapped Antihydrogen

Science.gov (United States)

Charlton, Michael

2017-04-01

For more than a decade antihydrogen atoms have been formed by mixing antiprotons and positrons held in arrangements of charged particle (Penning) traps. More recently, magnetic minimum neutral atom traps have been superimposed upon the anti-atom production region, promoting the trapping of a small quantity of the antihydrogen yield. We will review these advances, and describe some of the first physics experiments performed on anrtihydrogen including the observation of the two-photon 1S-2S transition, invesigation of the charge neutrailty of the anti-atom and studies of the ground state hyperfine splitting. We will discuss the physics motivations for undertaking these experiments and describe some near-future initiatives.

Asymmetric ion trap

Science.gov (United States)

Barlow, Stephan E.; Alexander, Michael L.; Follansbee, James C.

1997-01-01

An ion trap having two end cap electrodes disposed asymmetrically about a center of a ring electrode. The inner surface of the end cap electrodes are conformed to an asymmetric pair of equipotential lines of the harmonic formed by the application of voltages to the electrodes. The asymmetry of the end cap electrodes allows ejection of charged species through the closer of the two electrodes which in turn allows for simultaneously detecting anions and cations expelled from the ion trap through the use of two detectors charged with opposite polarity.

Charge Transport in Spiro-OMeTAD Investigated through Space-Charge-Limited Current Measurements

Science.gov (United States)

Röhr, Jason A.; Shi, Xingyuan; Haque, Saif A.; Kirchartz, Thomas; Nelson, Jenny

2018-04-01

Extracting charge-carrier mobilities for organic semiconductors from space-charge-limited conduction measurements is complicated in practice by nonideal factors such as trapping in defects and injection barriers. Here, we show that by allowing the bandlike charge-carrier mobility, trap characteristics, injection barrier heights, and the shunt resistance to vary in a multiple-trapping drift-diffusion model, a numerical fit can be obtained to the entire current density-voltage curve from experimental space-charge-limited current measurements on both symmetric and asymmetric 2 ,2',7 ,7' -tetrakis(N ,N -di-4-methoxyphenylamine)-9 ,9' -spirobifluorene (spiro-OMeTAD) single-carrier devices. This approach yields a bandlike mobility that is more than an order of magnitude higher than the effective mobility obtained using analytical approximations, such as the Mott-Gurney law and the moving-electrode equation. It is also shown that where these analytical approximations require a temperature-dependent effective mobility to achieve fits, the numerical model can yield a temperature-, electric-field-, and charge-carrier-density-independent mobility. Finally, we present an analytical model describing trap-limited current flow through a semiconductor in a symmetric single-carrier device. We compare the obtained charge-carrier mobility and trap characteristics from this analytical model to the results from the numerical model, showing excellent agreement. This work shows the importance of accounting for traps and injection barriers explicitly when analyzing current density-voltage curves from space-charge-limited current measurements.

Bounds on area and charge for marginally trapped surfaces with a cosmological constant

International Nuclear Information System (INIS)

Simon, Walter

2012-01-01

We sharpen the known inequalities AΛ ≤ 4π(1 - g) (Hayward et al 1994 Phys. Rev. D 49 5080, Woolgar 1999 Class. Quantum Grav. 16 3005) and A ≤ 4πQ 2 (Dain et al 2012 Class. Quantum Grav. 29 035013) between the area A and the electric charge Q of a stable marginally outer-trapped surface (MOTS) of genus g in the presence of a cosmological constant Λ. In particular, instead of requiring stability we include the principal eigenvalue λ of the stability operator. For Λ* Λ+λ > 0, we obtain a lower and an upper bound for Λ*A in terms of Λ*Q 2 , as well as the upper bound Q≤1/(2√(Λ * )) for the charge, which reduces to Q≤1/(2√(Λ)) in the stable case λ ≥ 0. For Λ* < 0, there only remains a lower bound on A. In the spherically symmetric, static, stable case, one of our area inequalities is saturated iff the surface gravity vanishes. We also discuss implications of our inequalities for 'jumps' and mergers of charged MOTS. (fast track communication)

A time-resolved current method and TSC under vacuum conditions of SEM: Trapping and detrapping processes in thermal aged XLPE insulation cables

Science.gov (United States)

Boukezzi, L.; Rondot, S.; Jbara, O.; Boubakeur, A.

2017-03-01

Thermal aging of cross-linked polyethylene (XLPE) can cause serious concerns in the safety operation in high voltage system. To get a more detailed picture on the effect of thermal aging on the trapping and detrapping process of XLPE in the melting temperature range, Thermal Stimulated Current (TSC) have been implemented in a Scanning Electron Microscope (SEM) with a specific arrangement. The XLPE specimens are molded and aged at two temperatures (120 °C and 140 °C) situated close to the melting temperature of the material. The use of SEM allows us to measure both leakage and displacement currents induced in samples under electron irradiation. The first represents the conduction process of XLPE and the second gives information on the trapping of charges in the bulk of the material. TSC associated to the SEM leads to show spectra of XLPE discharge under thermal stimulation using both currents measured after electron irradiation. It was found that leakage current in the charging process may be related to the physical defects resulting in crystallinity variation under thermal aging. However the trapped charge can be affected by the carbonyl groups resulting from the thermo-oxidation degradation and the disorder in the material. It is evidenced from the TSC spectra of unaged XLPE that there is no detrapping charge under heat stimulation. Whereas the presence of peaks in the TSC spectra of thermally aged samples indicates that there is some amount of trapped charge released by heating. The detrapping behavior of aged XLPE is supported by the supposition of the existence of two trap levels: shallow traps and deep traps. Overall, physico-chemical reactions under thermal aging at high temperatures leads to the enhancement of shallow traps density and changes in range of traps depth. These changes induce degradation of electrical properties of XLPE.

Impact of GaN cap on charges in Al₂O₃/(GaN/)AlGaN/GaN metal-oxide-semiconductor heterostructures analyzed by means of capacitance measurements and simulations

Energy Technology Data Exchange (ETDEWEB)

Ťapajna, M., E-mail: milan.tapajna@savba.sk; Jurkovič, M.; Válik, L.; Haščík, Š.; Gregušová, D.; Kuzmík, J. [Institute of Electrical Engineering, Slovak Academy of Sciences, Dúbravská cesta 9, 841 04 Bratislava (Slovakia); Brunner, F.; Cho, E.-M. [Ferdinand-Braun-Institut, Leibniz Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Strasse 4, 12489 Berlin (Germany); Hashizume, T. [Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University, 060-0814 Sapporo, Japan and JST-CREST, 102-0075 Tokyo (Japan)

2014-09-14

Oxide/semiconductor interface trap density (D{sub it}) and net charge of Al₂O₃/(GaN)/AlGaN/GaN metal-oxide-semiconductor high-electron mobility transistor (MOS-HEMT) structures with and without GaN cap were comparatively analyzed using comprehensive capacitance measurements and simulations. D{sub it} distribution was determined in full band gap of the barrier using combination of three complementary capacitance techniques. A remarkably higher D{sub it} (∼5–8 × 10¹²eV⁻¹ cm⁻²) was found at trap energies ranging from E_C-0.5 to 1 eV for structure with GaN cap compared to that (D{sub it} ∼ 2–3 × 10¹²eV⁻¹ cm⁻²) where the GaN cap was selectively etched away. D{sub it} distributions were then used for simulation of capacitance-voltage characteristics. A good agreement between experimental and simulated capacitance-voltage characteristics affected by interface traps suggests (i) that very high D{sub it} (>10¹³eV⁻¹ cm⁻²) close to the barrier conduction band edge hampers accumulation of free electron in the barrier layer and (ii) the higher D{sub it} centered about E_C-0.6 eV can solely account for the increased C-V hysteresis observed for MOS-HEMT structure with GaN cap. Analysis of the threshold voltage dependence on Al₂O₃ thickness for both MOS-HEMT structures suggests that (i) positive charge, which compensates the surface polarization, is not necessarily formed during the growth of III-N heterostructure, and (ii) its density is similar to the total surface polarization charge of the GaN/AlGaN barrier, rather than surface polarization of the top GaN layer only. Some constraints for the positive surface compensating charge are discussed.

Interface passivation and trap reduction via hydrogen fluoride for molybdenum disulfide on silicon oxide back-gate transistors

Science.gov (United States)

Hu, Yaoqiao; San Yip, Pak; Tang, Chak Wah; Lau, Kei May; Li, Qiang

2018-04-01

Layered semiconductor molybdenum disulfide (MoS2) has recently emerged as a promising material for flexible electronic and optoelectronic devices because of its finite bandgap and high degree of gate control. Here, we report a hydrogen fluoride (HF) passivation technique for improving the carrier mobility and interface quality of chemical vapor deposited monolayer MoS2 on a SiO2/Si substrate. After passivation, the fabricated MoS2 back-gate transistors demonstrate a more than double improvement in average electron mobility, a reduced gate hysteresis gap of 3 V, and a low interface trapped charge density of ˜5.8 × 1011 cm-2. The improvements are attributed to the satisfied interface dangling bonds, thus a reduction of interface trap states and trapped charges. Surface x-ray photoelectron spectroscopy analysis and first-principles simulation were performed to verify the HF passivation effect. The results here highlight the necessity of a MoS2/dielectric passivation strategy and provides a viable route for enhancing the performance of MoS2 nano-electronic devices.

Extraction of highly charged ions from the Berlin Electron Beam Ion Trap for interactions with a gas target

International Nuclear Information System (INIS)

Allen, F.I.; Biedermann, C.; Radtke, R.; Fussmann, G.

2006-01-01

Highly charged ions are extracted from the Berlin Electron Beam Ion Trap for investigations of charge exchange with a gas target. The classical over-the-barrier model for slow highly charged ions describes this process, whereby one or more electrons are captured from the target into Rydberg states of the ion. The excited state relaxes via a radiative cascade of the electron to ground energy. The cascade spectra are characteristic of the capture state. We investigate x-ray photons emitted as a result of interactions between Ar 17+ ions at energies ≤5q keV with Ar atoms. Of particular interest is the velocity dependence of the angular momentum capture state l c

Negative charging effect of traps on the gate leakage current of an AlGaN/GaN HEMT

Energy Technology Data Exchange (ETDEWEB)

Kim, J. J.; Lim, J. H.; Yang, J. W. [Chonbuk National University, Jeonju (Korea, Republic of); Stanchina, W. [University of Pittsburgh, Pittsburgh, PA (United States)

2014-08-15

The negative charging effect of surface traps on the gate leakage current of AlGaN/GaN high electron mobility transistors (HEMTs) was investigated. The gate leakage current could be decreased by two orders of magnitude by using a photo-electrochemical process to treat of the source and the drain region, but current flowed into the gate even at a negative voltage in a limited region when the measurement was executed with a gate voltage sweep from negative to positive voltage. Also the electrical characteristics of the HEMT were degraded by pulsed operation of the gate. Traps newly generated on the surface were regarded as sources for the current that flowed against the applied voltage, and the number of traps was estimated. Also, a slow transient in the drain current was confirmed based on the results of delayed sweep measurements.

Effect of grain alignment on interface trap density of thermally oxidized aligned-crystalline silicon films

Science.gov (United States)

Choi, Woong; Lee, Jung-Kun; Findikoglu, Alp T.

2006-12-01

The authors report studies of the effect of grain alignment on interface trap density of thermally oxidized aligned-crystalline silicon (ACSi) films by means of capacitance-voltage (C-V) measurements. C-V curves were measured on metal-oxide-semiconductor (MOS) capacitors fabricated on ⟨001⟩-oriented ACSi films on polycrystalline substrates. From high-frequency C-V curves, the authors calculated a decrease of interface trap density from 2×1012to1×1011cm-2eV-1 as the grain mosaic spread in ACSi films improved from 13.7° to 6.5°. These results demonstrate the effectiveness of grain alignment as a process technique to achieve significantly enhanced performance in small-grained (⩽1μm ) polycrystalline Si MOS-type devices.

Effects of low-temperature (120 °C) annealing on the carrier concentration and trap density in amorphous indium gallium zinc oxide thin film transistors

Energy Technology Data Exchange (ETDEWEB)

Kim, Jae-sung; Piao, Mingxing; Jang, Ho-Kyun; Kim, Gyu-Tae, E-mail: gtkim@korea.ac.kr [School of Electrical Engineering, Korea University, Seoul 136-701 (Korea, Republic of); Oh, Byung Su [School of Electrical Engineering, Korea University, Seoul 136-701 (Korea, Republic of); Samsung Display Company, Yongin (Korea, Republic of); Joo, Min-Kyu [School of Electrical Engineering, Korea University, Seoul 136-701 (Korea, Republic of); IMEP-LAHC, Grenoble INP, Minatec, CS 50257, 38016 Grenoble (France); Ahn, Seung-Eon [School of Electrical Engineering, Korea University, Seoul 136-701 (Korea, Republic of); Samsung Advanced Institute of Technology, Samsung Electronics Corporations, Yongin 446-712 (Korea, Republic of)

2014-12-28

We report an investigation of the effects of low-temperature annealing on the electrical properties of amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs). X-ray photoelectron spectroscopy was used to characterize the charge carrier concentration, which is related to the density of oxygen vacancies. The field-effect mobility was found to decrease as a function of the charge carrier concentration, owing to the presence of band-tail states. By employing the transmission line method, we show that the contact resistance did not significantly contribute to the changes in device performance after annealing. In addition, using low-frequency noise analyses, we found that the trap density decreased by a factor of 10 following annealing at 120 °C. The switching operation and on/off ratio of the a-IGZO TFTs improved considerably after low-temperature annealing.

High‐Performance Nonvolatile Organic Field‐Effect Transistor Memory Based on Organic Semiconductor Heterostructures of Pentacene/P13/Pentacene as Both Charge Transport and Trapping Layers

Science.gov (United States)

Li, Wen; Guo, Fengning; Ling, Haifeng; Zhang, Peng; Wang, Laiyuan; Wu, Dequn

2017-01-01

Nonvolatile organic field‐effect transistor (OFET) memory devices based on pentacene/N,N′‐ditridecylperylene‐3,4,9,10‐tetracarboxylic diimide (P13)/pentacene trilayer organic heterostructures have been proposed. The discontinuous n‐type P13 embedded in p‐type pentacene layers can not only provide electrons in the semiconductor layer that facilitates electron trapping process; it also works as charge trapping sites, which is attributed to the quantum well‐like pentacene/P13/pentacene organic heterostructures. The synergistic effects of charge trapping in the discontinuous P13 and the charge‐trapping property of the poly(4‐vinylphenol) (PVP) layer remarkably improve the memory performance. In addition, the trilayer organic heterostructures have also been successfully applied to multilevel and flexible nonvolatile memory devices. The results provide a novel design strategy to achieve high‐performance nonvolatile OFET memory devices and allow potential applications for different combinations of various organic semiconductor materials in OFET memory. PMID:28852619

Controlling charge on levitating drops.

Science.gov (United States)

Hilger, Ryan T; Westphall, Michael S; Smith, Lloyd M

2007-08-01

Levitation technologies are used in containerless processing of materials, as microscale manipulators and reactors, and in the study of single drops and particles. Presented here is a method for controlling the amount and polarity of charge on a levitating drop. The method uses single-axis acoustic levitation to trap and levitate a single, initially neutral drop with a diameter between 400 microm and 2 mm. This drop is then charged in a controllable manner using discrete packets of charge in the form of charged drops produced by a piezoelectric drop-on-demand dispenser equipped with a charging electrode. The magnitude of the charge on the dispensed drops can be adjusted by varying the voltage applied to the charging electrode. The polarity of the charge on the added drops can be changed allowing removal of charge from the trapped drop (by neutralization) and polarity reversal. The maximum amount of added charge is limited by repulsion of like charges between the drops in the trap. This charging scheme can aid in micromanipulation and the study of charged drops and particles using levitation.

FIB-SEM investigation of trapped intermetallic particles in anodic oxide films on AA1050 aluminium

DEFF Research Database (Denmark)

Jariyaboon, Manthana; Møller, Per; Dunin-Borkowski, Rafal E.

2011-01-01

-containing intermetallic particles incorporated into the anodic oxide films on industrially pure aluminium (AA1050, 99.5 per cent) has been investigated. AA1050 aluminium was anodized in a 100?ml/l sulphuric acid bath with an applied voltage of 14?V at 20°C ±2°C for 10 or 120?min. The anodic film subsequently was analyzed......Purpose - The purpose of this investigation is to understand the structure of trapped intermetallics particles and localized composition changes in the anodized anodic oxide film on AA1050 aluminium substrates. Design/methodology/approach - The morphology and composition of Fe......-shaped particles were embedded in the anodic oxide film as a thin strip structure and located near the top surface of the film, whereas the round-shaped particles were trapped in the film with a spherical structure, but partially dissolved and were located throughout the thickness of the anodic film. The Fe...

Charge-transfer spectra of tetravalent lanthanide ions in oxides

NARCIS (Netherlands)

Hoefdraad, H.E.

The charge-transfer spectra of Ce4+, Pr4+ and Tb4+ in a number of oxides are reported. It is noted that the position of the first charge-transfer band is fixed for the metal ion in an oxygen coordination of VI, but varies in VIII coordination as a function of the host lattice. It is argued that this

Improved memory characteristics by NH3-nitrided GdO as charge storage layer for nonvolatile memory applications

International Nuclear Information System (INIS)

Liu, L.; Xu, J. P.; Ji, F.; Chen, J. X.; Lai, P. T.

2012-01-01

Charge-trapping memory capacitor with nitrided gadolinium oxide (GdO) as charge storage layer (CSL) is fabricated, and the influence of post-deposition annealing in NH 3 on its memory characteristics is investigated. Transmission electron microscopy, x-ray photoelectron spectroscopy, and x-ray diffraction are used to analyze the cross-section and interface quality, composition, and crystallinity of the stack gate dielectric, respectively. It is found that nitrogen incorporation can improve the memory window and achieve a good trade-off among the memory properties due to NH 3 -annealing-induced reasonable distribution profile of a large quantity of deep-level bulk traps created in the nitrided GdO film and reduction of shallow traps near the CSL/SiO 2 interface.

Stable Trapping of Multielectron Helium Bubbles in a Paul Trap

Science.gov (United States)

Joseph, E. M.; Vadakkumbatt, V.; Pal, A.; Ghosh, A.

2017-06-01

In a recent experiment, we have used a linear Paul trap to store and study multielectron bubbles (MEBs) in liquid helium. MEBs have a charge-to-mass ratio (between 10^{-4} and 10^{-2} C/kg) which is several orders of magnitude smaller than ions (between 10^6 and 10^8 C/kg) studied in traditional ion traps. In addition, MEBs experience significant drag force while moving through the liquid. As a result, the experimental parameters for stable trapping of MEBs, such as magnitude and frequency of the applied electric fields, are very different from those used in typical ion trap experiments. The purpose of this paper is to model the motion of MEBs inside a linear Paul trap in liquid helium, determine the range of working parameters of the trap, and compare the results with experiments.

Molecular Dynamics Simulations of Collisional Cooling and Ordering of Multiply Charged Ions in a Penning Trap

International Nuclear Information System (INIS)

Holder, J.P.; Church, D.A.; Gruber, L.; DeWitt, H.E.; Beck, B.R.; Schneider, D.

2000-01-01

Molecular dynamics simulations are used to help design new experiments by modeling the cooling of small numbers of trapped multiply charged ions by Coulomb interactions with laser-cooled Be + ions. A Verlet algorithm is used to integrate the equations of motion of two species of point ions interacting in an ideal Penning trap. We use a time step short enough to follow the cyclotron motion of the ions. Axial and radial temperatures for each species are saved periodically. Direct heating and cooling of each species in the simulation can be performed by periodically rescaling velocities. Of interest are Fe 11+ due to a EUV-optical double resonance for imaging and manipulating the ions, and Ca 14+ since a ground state fine structure transition has a convenient wavelength in the tunable laser range

Charge collection and space charge distribution in neutron-irradiated epitaxial silicon detectors

International Nuclear Information System (INIS)

Poehlsen, Thomas

2010-04-01

In this work epitaxial n-type silicon diodes with a thickness of 100 μm and 150 μm are investigated. After neutron irradiation with fluences between 10 14 cm -2 and 4 x 10 15 cm -2 annealing studies were performed. CV-IV curves were taken and the depletion voltage was determined for different annealing times. All investigated diodes with neutron fluences greater than 2 x 10 14 cm -2 showed type inversion due to irradiation. Measurements with the transient current technique (TCT) using a pulsed laser were performed to investigate charge collection effects for temperatures of -40 C, -10 C and 20 C. The charge correction method was used to determine the effective trapping time τ eff . Inconsistencies of the results could be explained by assuming field dependent trapping times. A simulation of charge collection could be used to determine the field dependent trapping time τ eff (E) and the space charge distribution in the detector bulk. Assuming a linear field dependence of the trapping times and a linear space charge distribution the data could be described. Indications of charge multiplication were seen in the irradiated 100 μm thick diodes for all investigated fluences at voltages above 800 V. The space charge distribution extracted from TCT measurements was compared to the results of the CV measurements and showed good agreement. (orig.)

Light-erasable embedded charge-trapping memory based on MoS2 for system-on-panel applications

Science.gov (United States)

He, Long-Fei; Zhu, Hao; Xu, Jing; Liu, Hao; Nie, Xin-Ran; Chen, Lin; Sun, Qing-Qing; Xia, Yang; Wei Zhang, David

2017-11-01

The continuous scaling and challenges in device integrations in modern portable electronic products have aroused many scientific interests, and a great deal of effort has been made in seeking solutions towards a more microminiaturized package assembled with smaller and more powerful components. In this study, an embedded light-erasable charge-trapping memory with a high-k dielectric stack (Al2O3/HfO2/Al2O3) and an atomically thin MoS2 channel has been fabricated and fully characterized. The memory exhibits a sufficient memory window, fast programming and erasing (P/E) speed, and high On/Off current ratio up to 107. Less than 25% memory window degradation is observed after projected 10-year retention, and the device functions perfectly after 8000 P/E operation cycles. Furthermore, the programmed device can be fully erased by incident light without electrical assistance. Such excellent memory performance originates from the intrinsic properties of two-dimensional (2D) MoS2 and the engineered back-gate dielectric stack. Our integration of 2D semiconductors in the infrastructure of light-erasable charge-trapping memory is very promising for future system-on-panel applications like storage of metadata and flexible imaging arrays.

Origin of interface states and oxide charges generated by ionizing radiation

International Nuclear Information System (INIS)

Sah, C.T.

1976-01-01

The randomly located trivalent silicon atoms are shown to account for the thermally generated interface states at the SiO 2 -Si interface. The interface state density is greatly reduced in water containing ambients at low temperatures (450 0 C) by forming trivalent silicon hydroxide bonds. Interface states are regenerated when the /triple bond/Si-OH bonds are broken by ionizing radiation and the OH ions are drifted away. In the bulk of the oxide film, the trivalent silicon and the interstitial oxygen donor centers are shown to be responsible for the heat and radiation generated positive space charge build-up (oxide charge) in thermally grown silicon oxide

Generation and confinement of mobile charges in buried oxide of SOI substrates

International Nuclear Information System (INIS)

Gruber, O.; Krawiec, S.; Musseau, O.; Paillet, Ph.; Courtot-Descharles, A.

1999-01-01

We analyze the mechanisms of generation and confinement of mobile protons resulting from hydrogen annealing of SOI buried oxides. This study of the mechanisms of generation and confinement of mobile protons in the buried oxide of SOI wafers emphasizes the importance of H+ diffusion in the oxide in the formation of a mobile charge. Under specific electric field conditions the irradiation of these devices results in a pinning of this mobile charge at the bottom Si-SiO 2 interface. Ab initio calculations are in progress to investigate the possible precursor defects in the oxide and detail the mechanism for mobile proton generation and confinement. (authors)

Radiation-enhanced short channel effects due to multi-dimensional influence from charge at trench isolation oxides

International Nuclear Information System (INIS)

Youk, G.U.; Khare, P.S.; Schrimpf, R.D.; Massengill, L.W.; Galloway, K.F.

1999-01-01

Radiation enhanced drain induced barrier lowering (DIBL) was experimentally observed and verified by 3-D simulations for submicron devices with trench isolation oxides. Submicron MOSFETs with shallow trench isolation were exposed to total-ionizing-dose radiation. Prior to irradiation, the devices exhibited near-ideal current-voltage characteristics, with no significant short-channel effects for as-drawn gate lengths of 0.4 microm. Following irradiation, the off-state leakage current increased significantly for total doses above about 650 krad(SiO 2 ). In addition, the irradiated devices exhibited DIBL that increased the drain current by 5--10x for a gate length of 0.4 microm (the nominal minimum gate length for this process) and much more for slightly shorter devices (0.35 microm). The increase in the off-state leakage current and the accompanying DIBL are shown to be associated with a parasitic field-effect transistor that is present at the edge of the shallow trench. Three-dimensional simulations are used to illustrate the effect. Simulations show that trapped charge at the trench sidewalls enhance the DIBL by depleting the edges of the channel. Radiation-induced charge may decrease the effectiveness of short-channel engineering

Graphene-quantum-dot nonvolatile charge-trap flash memories

International Nuclear Information System (INIS)

Sin Joo, Soong; Kim, Jungkil; Seok Kang, Soo; Kim, Sung; Choi, Suk-Ho; Won Hwang, Sung

2014-01-01

Nonvolatile flash-memory capacitors containing graphene quantum dots (GQDs) of 6, 12, and 27 nm average sizes (d) between SiO 2 layers for use as charge traps have been prepared by sequential processes: ion-beam sputtering deposition (IBSD) of 10 nm SiO 2 on a p-type wafer, spin-coating of GQDs on the SiO 2 layer, and IBSD of 20 nm SiO 2 on the GQD layer. The presence of almost a single array of GQDs at a distance of ∼13 nm from the SiO 2 /Si wafer interface is confirmed by transmission electron microscopy and photoluminescence. The memory window estimated by capacitance–voltage curves is proportional to d for sweep voltages wider than  ± 3 V, and for d = 27 nm the GQD memories show a maximum memory window of 8 V at a sweep voltage of  ± 10 V. The program and erase speeds are largest at d = 12 and 27 nm, respectively, and the endurance and data-retention properties are the best at d = 27 nm. These memory behaviors can be attributed to combined effects of edge state and quantum confinement. (papers)

Radiation induced leakage current and stress induced leakage current in ultra-thin gate oxides

International Nuclear Information System (INIS)

Ceschia, M.; Paccagnella, A.; Cester, A.; Scarpa, A.

1998-01-01

Low-field leakage current has been measured in thin oxides after exposure to ionizing radiation. This Radiation Induced Leakage Current (RILC) can be described as an inelastic tunneling process mediated by neutral traps in the oxide, with an energy loss of about 1 eV. The neutral trap distribution is influenced by the oxide field applied during irradiation, thus indicating that the precursors of the neutral defects are charged, likely being defects associated to trapped holes. The maximum leakage current is found under zero-field condition during irradiation, and it rapidly decreases as the field is enhanced, due to a displacement of the defect distribution across the oxide towards the cathodic interface. The RILC kinetics are linear with the cumulative dose, in contrast with the power law found on electrically stressed devices

Electron Spin Resonance study of charge trapping in α-ZnMoO.sub.4./sub. single crystal scintillator

Czech Academy of Sciences Publication Activity Database

Buryi, Maksym; Spassky, D.A.; Hybler, Jiří; Laguta, Valentyn; Nikl, Martin

2015-01-01

Roč. 47, Sep (2015), 244-250 ISSN 0925-3467 R&D Projects: GA MŠk LO1409; GA MŠk(CZ) LM2011029; GA ČR GAP204/12/0805 Institutional support: RVO:68378271 Keywords : Electron Spin Resonance * scintillator * charge traps * zinc molybdate Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 2.183, year: 2015

Severe signal loss in diamond beam loss monitors in high particle rate environments by charge trapping in radiation-induced defects

Energy Technology Data Exchange (ETDEWEB)

Kassel, Florian; Boer, Wim de [Institute for Experimental Nuclear Physics (IEKP), KIT, Karlsruhe (Germany); Guthoff, Moritz; Dabrowski, Anne [CERN, Meyrin (Switzerland)

2016-10-15

The beam condition monitoring leakage (BCML) system is a beam monitoring device in the compact muon solenoid (CMS) experiment at the large hadron collider (LHC). As detectors 32 poly-crystalline (pCVD) diamond sensors are positioned in rings around the beam pipe. Here, high particle rates occur from the colliding beams scattering particles outside the beam pipe. These particles cause defects, which act as traps for the ionization, thus reducing the charge collection efficiency (CCE). However, the loss in CCE was much more severe than expected from low rate laboratory measurements and simulations, especially in single-crystalline (sCVD) diamonds, which have a low initial concentration of defects. After an integrated luminosity of a few fb{sup -1} corresponding to a few weeks of LHC operation, the CCE of the sCVD diamonds dropped by a factor of five or more and quickly approached the poor CCE of pCVD diamonds. The reason why in real experiments the CCE is much worse than in laboratory experiments is related to the ionization rate. At high particle rates the trapping rate of the ionization is so high compared with the detrapping rate, that space charge builds up. This space charge reduces locally the internal electric field, which in turn increases the trapping rate and recombination and hence reduces the CCE in a strongly non-linear way. A diamond irradiation campaign was started to investigate the rate-dependent electrical field deformation with respect to the radiation damage. Besides the electrical field measurements via the transient current technique (TCT), the CCE was measured. The experimental results were used to create an effective deep trap model that takes the radiation damage into account. Using this trap model, the rate-dependent electrical field deformation and the CCE were simulated with the software SILVACO TCAD. The simulation, tuned to rate-dependent measurements from a strong radioactive source, was able to predict the non-linear decrease of the

Severe signal loss in diamond beam loss monitors in high particle rate environments by charge trapping in radiation-induced defects

International Nuclear Information System (INIS)

Kassel, Florian; Boer, Wim de; Guthoff, Moritz; Dabrowski, Anne

2016-01-01

The beam condition monitoring leakage (BCML) system is a beam monitoring device in the compact muon solenoid (CMS) experiment at the large hadron collider (LHC). As detectors 32 poly-crystalline (pCVD) diamond sensors are positioned in rings around the beam pipe. Here, high particle rates occur from the colliding beams scattering particles outside the beam pipe. These particles cause defects, which act as traps for the ionization, thus reducing the charge collection efficiency (CCE). However, the loss in CCE was much more severe than expected from low rate laboratory measurements and simulations, especially in single-crystalline (sCVD) diamonds, which have a low initial concentration of defects. After an integrated luminosity of a few fb -1 corresponding to a few weeks of LHC operation, the CCE of the sCVD diamonds dropped by a factor of five or more and quickly approached the poor CCE of pCVD diamonds. The reason why in real experiments the CCE is much worse than in laboratory experiments is related to the ionization rate. At high particle rates the trapping rate of the ionization is so high compared with the detrapping rate, that space charge builds up. This space charge reduces locally the internal electric field, which in turn increases the trapping rate and recombination and hence reduces the CCE in a strongly non-linear way. A diamond irradiation campaign was started to investigate the rate-dependent electrical field deformation with respect to the radiation damage. Besides the electrical field measurements via the transient current technique (TCT), the CCE was measured. The experimental results were used to create an effective deep trap model that takes the radiation damage into account. Using this trap model, the rate-dependent electrical field deformation and the CCE were simulated with the software SILVACO TCAD. The simulation, tuned to rate-dependent measurements from a strong radioactive source, was able to predict the non-linear decrease of the CCE in

Controlling the interface charge density in GaN-based metal-oxide-semiconductor heterostructures by plasma oxidation of metal layers

International Nuclear Information System (INIS)

Hahn, Herwig; Kalisch, Holger; Vescan, Andrei; Pécz, Béla; Kovács, András; Heuken, Michael

2015-01-01

In recent years, investigating and engineering the oxide-semiconductor interface in GaN-based devices has come into focus. This has been driven by a large effort to increase the gate robustness and to obtain enhancement mode transistors. Since it has been shown that deep interface states act as fixed interface charge in the typical transistor operating regime, it appears desirable to intentionally incorporate negative interface charge, and thus, to allow for a positive shift in threshold voltage of transistors to realise enhancement mode behaviour. A rather new approach to obtain such negative charge is the plasma-oxidation of thin metal layers. In this study, we present transmission electron microscopy and energy dispersive X-ray spectroscopy analysis as well as electrical data for Al-, Ti-, and Zr-based thin oxide films on a GaN-based heterostructure. It is shown that the plasma-oxidised layers have a polycrystalline morphology. An interfacial amorphous oxide layer is only detectable in the case of Zr. In addition, all films exhibit net negative charge with varying densities. The Zr layer is providing a negative interface charge density of more than 1 × 10 13  cm –2 allowing to considerably shift the threshold voltage to more positive values

Two-species mixing in a nested Penning trap for antihydrogen trapping

International Nuclear Information System (INIS)

Ordonez, C. A.; Weathers, D. L.

2008-01-01

There exists an international quest to trap neutral antimatter in the form of antihydrogen for scientific study. One method that is being developed for trapping antihydrogen employs a nested Penning trap. Such a trap serves to mix positrons and antiprotons so as to produce low energy antihydrogen atoms. Mixing is achieved when the confinement volumes of the two species overlap one another. In the work presented here, a theoretical understanding of the mixing process is developed by analyzing a mixing scheme that was recently reported [G. Gabrielse et al., Phys. Rev. Lett. 100, 113001 (2008)]. The results indicate that positron space charge or collisions among antiprotons may substantially reduce the fraction of antiprotons that have an energy suitable for antihydrogen trapping

DFT+U study of self-trapping, trapping, and mobility of oxygen-type hole polarons in barium stannate

Science.gov (United States)

Geneste, Grégory; Amadon, Bernard; Torrent, Marc; Dezanneau, Guilhem

2017-10-01

The charge-transfer insulating perovskite oxides currently used as fuel cell electrolytes undergo, at high temperature, an oxidation reaction 1/2 O2(g ) +VO••→OOX+2 h• , that produces oxygen-type holes. Understanding the nature and mobility of these oxygen-type holes is an important step to improve the performance of devices, but presents a theoretical challenge since, in their localized form, they cannot be captured by standard density functional theory. Here, we employ the DFT+U formalism with a Hubbard correction on the p orbitals of oxygen to investigate several properties of these holes, in the particular case of BaSnO3. We describe the small oxygen-type hole polarons, the self-trapping at their origin, and their trapping by trivalent dopants (Ga, Sc, In, Lu, Y, Gd, La). Strong similarities with protonic defects are observed concerning the evolution of the trapping energy with ionic radius of the dopant. Moreover, we show that long-range diffusion of holes is a complex phenomenon, that proceeds by a succession of several mechanisms. However, the standard implementation of DFT+U within the projector augmented-wave (PAW) formalism leads to use very large, unphysical values of U for the O-p orbital. We propose here a slightly modified DFT+U scheme, that takes into account the fact that the O-p is truncated in usual DFT+U implementation in PAW. This scheme yields more physical values of U than the ones traditionally used in the literature, and describes well the properties of the hole polaron.

Oxidation of spin-traps by chlorine dioxide (ClO2) radical in aqueous solutions: first ESR evidence of formation of new nitroxide radicals.

Science.gov (United States)

Ozawa, T; Miura, Y; Ueda, J

1996-01-01

The reactivities of the chlorine dioxide (ClO2), which is a stable free radical towards some water-soluble spin-traps were investigated in aqueous solutions by an electron spin resonance (ESR) spectroscopy. The ClO2 radical was generated from the redox reaction of Ti3+ with potassium chlorate (KClO3) in aqueous solutions. When one of the spin-traps, 5,5-dimethyl-1-pyrroline N-oxide (DMPO), was included in the Ti3+-KClO3 reaction system, ESR spectrum due to the ClO2 radical completely disappeared and a new ESR spectrum [aN(1) = 0.72 mT, aH(2) = 0.41 mT], which is different from that of DMPO-ClO2 adduct, was observed. The ESR parameters of this new ESR signal was identical to those of 5,5-dimethylpyrrolidone-(2)-oxyl-(1) (DMPOX), suggesting the radical species giving the new ESR spectrum is assignable to DMPOX. The similar ESR spectrum consisting of a triplet [aN(1) = 0.69 mT] was observed when the derivative of DMPO, 3,3,5,5-tetramethyl-1-pyrroline N-oxide (M4PO) was included in the Ti3+-KClO3 reaction system. This radical species is attributed to the oxidation product of M4PO, 3,3,5,5-tetramethylpyrrolidone-(2)-oxyl-(1) (M4POX). When another nitrone spin-trap, alpha-(4-pyridyl-1-oxide)-N-t-butylnitrone (POBN) was used as a spin-trap, the ESR signal intensity due to the ClO2 radical decreased and a new ESR signal consisting of a triplet [aN(1) = 0.76 mT] was observed. The similar ESR spectrum was observed when N-t-butyl-alpha- nitrone (PBN) was used as a spin-trap. This ESR parameter [a(N)(1) = 0.85 mT] was identical to the oxidation product of PBN, PBNX. Thus, the new ESR signal observed from POBN may be assigned to the oxidation product of POBN, POBNX. These results suggest that the ClO2, radical does not form the stable spin adducts with nitrone spin-traps, but oxidizes these spin-traps to give the corresponding nitroxyl radicals. On the other hand, nitroso spin-traps, 5,5-dibromo-4-nitrosobenzenesulfonate (DBNBS), and 2-methyl-2-nitrosopropane (MNP) did not trap

Research on total-dose hardening for H-gate PD NMOSFET/SIMOX by ion implanting into buried oxide

International Nuclear Information System (INIS)

Qian Cong; Zhang Zhengxuan; Zhang Feng; Lin Chenglu

2008-01-01

In this work, we investigate the back-gate I-V characteristics for two kinds of NMOSFET/SIMOX transistors with H gate structure fabricated on two different SOI wafers. A transistors are made on the wafer implanted with Si + and then annealed in N 2 , and B transistors are made on the wafer without implantation and annealing. It is demonstrated experimentally that A transistors have much less back-gate threshold voltage shift ΔV th than B transistors under X-ray total close irradiation. Subthreshold charge separation technique is employed to estimate the build-up of oxide charge and interface traps during irradiation, showing that the reduced ΔV th for A transistors is mainly due to its less build-up of oxide charge than B transistors. Photo-luminescence (PL) research indicates that Si implantation results in the formation of silicon nanocrystalline (nanocluster) whose size increases with the implant dose. This structure can trap electrons to compensate the positive charge build-up in the buried oxide during irradiation, and thus reduce the threshold voltage negative shift. (authors)

Tailoring Charge Recombination in Photoelectrodes Using Oxide Nanostructures

DEFF Research Database (Denmark)

Iandolo, Beniamino; Wickman, Björn; Svensson, Elin

2016-01-01

Optimizing semiconductor devices for solar energy conversion requires an explicit control of the recombination of photogenerated electron−hole pairs. Here we show how the recombination of charge carriers can be controlled in semiconductor thin films by surface patterning with oxide nanodisks....... The control mechanism relies on the formation of dipole-like electric fields at the interface that, depending on the field direction, attract or repel minority carriers from underneath the disks. The charge recombination rate can be controlled through the choice of oxide material and the surface coverage...... of nanodisks. We provide proof-of-principle demonstration of this approach by patterning the surface of Fe2O3, one of the most studied semiconductors for light-driven water splitting, with TiO2 and Cu2O nanodisks. We expect this method to be generally applicable to a range of semiconductor-based solar energy...

Charge collection and space charge distribution in neutron-irradiated epitaxial silicon detectors

Energy Technology Data Exchange (ETDEWEB)

Poehlsen, Thomas

2010-04-15

In this work epitaxial n-type silicon diodes with a thickness of 100 {mu}m and 150 {mu}m are investigated. After neutron irradiation with fluences between 10{sup 14} cm{sup -2} and 4 x 10{sup 15} cm{sup -2} annealing studies were performed. CV-IV curves were taken and the depletion voltage was determined for different annealing times. All investigated diodes with neutron fluences greater than 2 x 10{sup 14} cm{sup -2} showed type inversion due to irradiation. Measurements with the transient current technique (TCT) using a pulsed laser were performed to investigate charge collection effects for temperatures of -40 C, -10 C and 20 C. The charge correction method was used to determine the effective trapping time {tau}{sub eff}. Inconsistencies of the results could be explained by assuming field dependent trapping times. A simulation of charge collection could be used to determine the field dependent trapping time {tau}{sub eff}(E) and the space charge distribution in the detector bulk. Assuming a linear field dependence of the trapping times and a linear space charge distribution the data could be described. Indications of charge multiplication were seen in the irradiated 100 {mu}m thick diodes for all investigated fluences at voltages above 800 V. The space charge distribution extracted from TCT measurements was compared to the results of the CV measurements and showed good agreement. (orig.)

Modelling of space-charge accumulation process in dielectrics of MDS structures under irradiation

International Nuclear Information System (INIS)

Gurtov, V.A.; Nazarov, A.I.; Travkov, I.V.

1990-01-01

Results of numerical modelling of radiation-induced space charge (RISC) accumulation in MOS structure silicon dioxide are given. Diffusion-drift model which takes account of trap heterogeneous distribution within dielectric volume and channeling of carriers captured at traps represents basis for calculations. Main physical processes affecting RISC accumulation are picked out and character of capture filling in dielectric volume under stress in MOS structure shutter during irradiation on the basis of comparison of experimental results for different thickness oxides with calculation data are predicted

On the investigation of electronic defect states in ZnO thin films by space charge spectroscopy with optical excitation

Science.gov (United States)

Schmidt, Matthias; Wenckstern, Holger von; Pickenhain, Rainer; Grundmann, Marius

2012-09-01

Electronic defect states in a n-type conducting zinc oxide thin film sample were investigated by means of space charge spectroscopy focussing on levels in the midgap region as well as on hole traps. To overcome the experimental difficulties arising from the wide bandgap and the lack of p-type conduction, optical excitation was employed to measure the emission of trapped charge carriers from these levels. Therefore - besides deep-level transient spectroscopy measurements - photo-capacitance, optically chopped photo-current, minority carrier transient spectroscopy, and optical capacitance-voltage experiments were conducted. In doing so, a midgap level labelled T4, and hole traps labelled TH1 and TH2 were detected. In the case of T4 and TH1 the photo-ionisation cross-section spectra were determined.

Chemical trapping and characterization of small oxoacids of sulfur (SOS) generated in aqueous oxidations of H2S.

Science.gov (United States)

Kumar, Murugaeson R; Farmer, Patrick J

2018-04-01

Small oxoacids of sulfur (SOS) are elusive molecules like sulfenic acid, HSOH, and sulfinic acid, HS(O)OH, generated during the oxidation of hydrogen sulfide, H 2 S, in aqueous solution. Unlike their alkyl homologs, there is a little data on their generation and speciation during H 2 S oxidation. These SOS may exhibit both nucleophilic and electrophilic reactivity, which we attribute to interconversion between S(II) and S(IV) tautomers. We find that SOS may be trapped in situ by derivatization with nucleophilic and electrophilic trapping agents and then characterized by high resolution LC MS. In this report, we compare SOS formation from H 2 S oxidation by a variety of biologically relevant oxidants. These SOS appear relatively long lived in aqueous solution, and thus may be involved in the observed physiological effects of H 2 S. Copyright © 2017 The Authors. Published by Elsevier B.V. All rights reserved.

Density of Trap States and Auger-mediated Electron Trapping in CdTe Quantum-Dot Solids

NARCIS (Netherlands)

Boehme, Simon C.; Mikel Azpiroz, Jon; Aulin, Yaroslav V.; Grozema, Ferdinand C.; Vanmaekelbergh, Daniel; Siebbeles, Laurens D. A.; Infante, Ivan; Houtepen, Arjan J.

Charge trapping is an ubiquitous process in colloidal quantum-dot solids and a major limitation to the efficiency of quantum dot based devices such as solar cells, LEDs, and thermoelectrics. Although empirical approaches led to a reduction of trapping and thereby efficiency enhancements, the exact

Density of trap states and Auger-mediated electron trapping in CdTe quantum-dot solids

NARCIS (Netherlands)

Boehme, Simon C.; Azpiroz, Jon Mikel; Aulin, Yaroslav V.; Grozema, Ferdinand C.; Vanmaekelbergh, Daniël; Siebbeles, Laurens D A; Infante, Ivan; Houtepen, Arjan J.

2015-01-01

Charge trapping is an ubiquitous process in colloidal quantum-dot solids and a major limitation to the efficiency of quantum dot based devices such as solar cells, LEDs, and thermoelectrics. Although empirical approaches led to a reduction of trapping and thereby efficiency enhancements, the exact

Investigations on MGy ionizing dose effects in thin oxides of micro-electronic devices

Energy Technology Data Exchange (ETDEWEB)

Gaillardin, M.; Paillet, P.; Raine, M.; Martinez, M.; Marcandella, C.; Duhamel, O.; Richard, N.; Leray, J.L. [CEA, DAM, DIF, F-91297 Arpajon (France); Goiffon, V.; Corbiere, F.; Rolando, S.; Molina, R.; Magnan, P. [ISAE, Universite de Toulouse, 10 avenue Edouard Belin, BP 54032, 31055 Toulouse Cedex 4 (France); Girard, S.; Ouerdane, Y.; Boukenter, A. [Universite de Saint-Etienne, Laboratoire H. Curien, UMR-5516, 42000, Saint-Etienne (France)

2015-07-01

Total ionizing dose (TID) effects have been studied for a long time in micro-electronic components designed to operate in natural and artificial environments. In most cases, TID induces both charge trapping in the bulk of irradiated oxides and the buildup of interface traps located at semiconductor/dielectric interfaces. Such effects result from basic mechanisms driven by both the shape of the electric field which stands into the oxide and by fabrication process parameters inducing pre-existing traps in the oxide's bulk. From the pioneering studies based on 'thick' oxide technologies to the most recent ones dedicated to innovative technologies, most studies concluded that the impact of total ionizing dose effects reduces with the oxide thinning. This is specifically the case for the gate-oxide of Metal-Oxide-Semiconductor Field Effect Transistors (MOSFET) for which it is generally considered that TID is not a major issue anymore at kGy dose ranges. TID effects are now mainly due to charge trapping in the field oxides such as Shallow Trench Isolation. This creates either parasitic conduction paths or Radiation-Induced Narrow Channel Effects (RINCE). Static current-voltage (I-V) electrical characteristics are then modified through a significant increase of the off-current of NMOS transistors or by shifting the whole I-V curves (of both NMOS and PMOS transistors). Based on these assumptions, no significant shift of I-V curves should be observed in modern bulk CMOS technologies. However, such phenomenon may not be directly extrapolated to higher TID ranges, typically of several MGy for which only few data are available in the literature. This paper presents evidences of large threshold voltage shifts measured at MGy dose levels despite the fact that transistors are designed in a submicron bulk technology which features a 7-nm thin gate-oxide on GO2 transistors dedicated to mixed analog/digital integrated circuits. Such electrical shifts are encountered

Investigations on MGy ionizing dose effects in thin oxides of micro-electronic devices

International Nuclear Information System (INIS)

Gaillardin, M.; Paillet, P.; Raine, M.; Martinez, M.; Marcandella, C.; Duhamel, O.; Richard, N.; Leray, J.L.; Goiffon, V.; Corbiere, F.; Rolando, S.; Molina, R.; Magnan, P.; Girard, S.; Ouerdane, Y.; Boukenter, A.

2015-01-01

Total ionizing dose (TID) effects have been studied for a long time in micro-electronic components designed to operate in natural and artificial environments. In most cases, TID induces both charge trapping in the bulk of irradiated oxides and the buildup of interface traps located at semiconductor/dielectric interfaces. Such effects result from basic mechanisms driven by both the shape of the electric field which stands into the oxide and by fabrication process parameters inducing pre-existing traps in the oxide's bulk. From the pioneering studies based on 'thick' oxide technologies to the most recent ones dedicated to innovative technologies, most studies concluded that the impact of total ionizing dose effects reduces with the oxide thinning. This is specifically the case for the gate-oxide of Metal-Oxide-Semiconductor Field Effect Transistors (MOSFET) for which it is generally considered that TID is not a major issue anymore at kGy dose ranges. TID effects are now mainly due to charge trapping in the field oxides such as Shallow Trench Isolation. This creates either parasitic conduction paths or Radiation-Induced Narrow Channel Effects (RINCE). Static current-voltage (I-V) electrical characteristics are then modified through a significant increase of the off-current of NMOS transistors or by shifting the whole I-V curves (of both NMOS and PMOS transistors). Based on these assumptions, no significant shift of I-V curves should be observed in modern bulk CMOS technologies. However, such phenomenon may not be directly extrapolated to higher TID ranges, typically of several MGy for which only few data are available in the literature. This paper presents evidences of large threshold voltage shifts measured at MGy dose levels despite the fact that transistors are designed in a submicron bulk technology which features a 7-nm thin gate-oxide on GO2 transistors dedicated to mixed analog/digital integrated circuits. Such electrical shifts are encountered

Impact of negative capacitance effect on Germanium Double Gate pFET for enhanced immunity to interface trap charges

Science.gov (United States)

Bansal, Monika; Kaur, Harsupreet

2018-05-01

In this work, a comprehensive drain current model has been developed for long channel Negative Capacitance Germanium Double Gate p-type Field Effect Transistor (NCGe-DG-pFET) by using 1-D Poisson's equation and Landau-Khalatnikov equation. The model takes into account interface trap charges and by using the derived model various parameters such as surface potential, gain, gate capacitance, subthreshold swing, drain current, transconductance, output conductance and Ion/Ioff ratio have been obtained and it is demonstrated that by incorporating ferroelectric material as gate insulator with Ge-channel, subthreshold swing values less than 60 mV/dec can be achieved along with improved gate controllability and current drivability. Further, to critically analyze the advantages offered by NCGe-DG-pFET, a detailed comparison has been done with Germanium Double Gate p-type Field Effect Transistor (Ge-DG-pFET) and it is shown that NCGe-DG-pFET exhibits high gain, enhanced transport efficiency in channel, very less or negligible degradation in device characteristics due to interface trap charges as compared to Ge-DG-pFET. The analytical results so obtained show good agreement with simulated results obtained from Silvaco ATLAS TCAD tool.

Guest Editor’s Notes on the “Atoms” Special Issue on “Perspectives of Atomic Physics with Trapped Highly Charged Ions”

Directory of Open Access Journals (Sweden)

Elmar Träbert

2016-02-01

Full Text Available The study of highly charged ions (HCI was pursued first at Uppsala (Sweden, by Edlén and Tyrén in the 1930s. Their work led to the recognition that the solar corona is populated by such ions, an insight which forced massive paradigm changes in solar physics. Plasmas aiming at controlled fusion in the laboratory, laser-produced plasmas, foil-excited swift ion beams, and electron beam ion traps have all pushed the envelope in the production of HCI. However, while there are competitive aspects in the race for higher ion charge states, the real interest lies in the very many physics topics that can be studied in these ions. Out of this rich field, the Special Issue concentrates on atomic physics studies that investigate highly charged ions produced, maintained, and/or manipulated in ion traps. There have been excellent achievements in the field in the past, and including fairly recent work, they have been described by their authors at conferences and in the appropriate journals. The present article attempts an overview over current lines of development, some of which are expanded upon in this Special Issue.

Hydrogen traps in the oxide/alloy interface region of Zr-Nb alloys

International Nuclear Information System (INIS)

Khatamian, D.

1995-03-01

In this study the 1 H( 15 N,αγ) 12 C nuclear reaction has been used to measure hydrogen profiles of anodically oxidized Zr-Nb specimens containing various amounts of niobium. The profiles have been correlated with oxygen profiles, obtained using a Scanning Auger Microprobe (SAM), and with X-ray diffraction patterns. In addition, unoxidized Zr-2.5Nb (Zr-2.5 wt% Nb) samples were implanted with oxygen and hydrogen to study the interaction between these two species when dissolved in the alloy. All the anodically oxidized specimens, except the pure Zr and the single-phase β-Zr (Zr-20Nb) samples, displayed hydrogen peaks beneath the oxide layer. These results, in conjunction with the results from the implanted specimens, indicate that the hydrogen moves under the influence of a stress gradient to the sub-oxide region, where the metal lattice has been expanded due to superficial oxide growth. The results show that dissolved oxygen sites in Zr-2.5Nb alloy do not trap hydrogen. (author). 16 refs., 6 figs

Laboratory X-ray Studies with Trapped Highly Charged Ions Using Synchrotrons and Free-electron Lasers

Science.gov (United States)

Crespo López-Urrutia, José R.

2018-06-01

Laboratory studies on highly charged ions (HCI) using electron beam ion traps (EBITs) can cover all charge states and chemical elements found in astrophysical sources. Since their introduction in 1986, a wealth of emission measurements from the optical to the x-ray range has been carried out by different groups. In most of the work, electron-impact excitation was the driving mechanism, and high resolution spectrometers were used for the diagnostic of the emitted radiation. Other recent studies included x-ray emission following charge exchange, a mechanism which is present in many astrophysical environments and can help explain some of the unknown spectral features at 3.55 keV.In the last decade, excitation and photoionization have also been investigated by exposing HCI trapped in an EBIT to intense, monochromatic radiation from free-electron lasers and synchrotron sources. Here, advanced monochromators in powerful undulator beamlines allowed us to work at photon energies from 50 eV to 15 keV while resolving the natural linewidths of x-ray transitions like the Kα complex of Fe up to the highest charge states, and to measure the oscillator strengths of, e. g., the neonlike Fe16+ spectrum. Photoionization studies have been performed for those species as well. Very recently, our novel compact EBIT with an off-axis electron gun allows for simultaneously using the photon beam downstream, enabling exact wavelength determinations referenced to HCI with accurately calculable transitions. We have performed a recalibration of the molecular and atomic oxygen soft x-ray absorption lines in the 500 eV range with an uncertainty estimate of 30 meV. This revealed a 600 meV calibration error that propagated through the literature for decades with the consequence of a 200 km/s misfit of the velocity in interstellar oxygen absorbers. Other possibilities for the compact EBIT are investigations of resonant photorecombination processes with excellent energy resolution. With the

Drift of nonequilibrium charge carriers in GaAs-crystals with traps in ultrasonic fields

International Nuclear Information System (INIS)

Zaveryukhina, N.N.; Zaveryukhin, B.N.; Zaveryukhina, E.B.

2007-01-01

Full text: The drift of nonequilibrium charge carriers in a semiconductor is one of the basic processes determining the efficiency of semiconductor photodetectors. Gallium arsenide possesses certain advantages to other semiconductors in this respect, which allow GaAs-photodetectors to be obtained which possess the maximum efficiency in comparison with all other systems. The purpose of this study was to deepen and expand our knowledge about the acoustic-drift processes in GaAs- crystals. As is known, the drift of nonequilibrium charge carriers in a semiconductor is determined either by external electric fields and/or by internal (built-in) electrostatic fields related to an impurity concentration gradient in the semiconductor. Gallium arsenide is a piezoelectric semiconductor with a structure possessing no center of symmetry. An electric field applied to such a crystal produces deformation of the crystal, and vice versa, any deformation of the crystal leads to the appearance of an induced electric field. Therefore, investigation of the effect of deformation on the drift of nonequilibrium charge carriers is a very important task. One of the possible straining factors is ultrasonic wave. Interaction of the charge carriers with ultrasonic waves in piezo-semiconductors is mediated by piezo exertion. Straining a semiconductor by an ultrasonic wave field gives rise to a force acting upon the charge carriers, which is proportional to the wave vector and the piezoelectric constant of the crystal. The physics of interaction between an ultrasonic wave and nonequilibrium charge carriers in GaAs, as well as in non-polar semiconductors (Si, Ge), consists in the energy and momentum exchange between the wave and the carriers. Besides the ultrasonic waves interact with the traps of carriers and devastate them. These both acoustic effects lead to rise of amplitude of signal of GaAs-photodetectors. (authors)

Charge transfer in rectifying oxide heterostructures and oxide access elements in ReRAM

Energy Technology Data Exchange (ETDEWEB)

Stefanovich, G. B.; Pergament, A. L.; Boriskov, P. P.; Kuroptev, V. A., E-mail: v.a.kuroptev@gmail.com; Stefanovich, T. G. [Petrozavodsk State University (Russian Federation)

2016-05-15

The main aspects of the synthesis and experimental research of oxide diode heterostructures are discussed with respect to their use as selector diodes, i.e., access elements in oxide resistive memory. It is shown that charge transfer in these materials differs significantly from the conduction mechanism in p–n junctions based on conventional semiconductors (Si, Ge, A{sup III}–B{sup V}), and the model should take into account the electronic properties of oxides, primarily the low carrier drift mobility. It is found that an increase in the forward current requires an oxide with a small band gap (<1.3 eV) in the heterostructure composition. Heterostructures with Zn, In–Zn (IZO), Ti, Ni, and Cu oxides are studied; it is found that the CuO–IZO heterojunction has the highest forward current density (10{sup 4} A/cm{sup 2}).

Tuning the Electron Gas at an Oxide Heterointerface via Free Surface Charges

Energy Technology Data Exchange (ETDEWEB)

Bell, Christopher

2011-08-11

Oxide heterointerfaces are emerging as one of the most exciting materials systems in condensed matter science. One remarkable example is the LaAlO{sub 3}/SrTiO{sub 3} (LAO/STO) interface, a model system in which a highly mobile electron gas forms between two band insulators, exhibiting two dimensional superconductivity and unusual magnetotransport properties. An ideal tool to tune such an electron gas is the electrostatic field effect. In principle, the electrostatic field can be generated by bound charges due to polarization (as in the normal and ferroelectric field effects) or by adding excess free charge. In previous studies, a large modulation of the carrier density and mobility of the LAO/STO interface has been achieved using the normal field effect. However, little attention has been paid to the field effect generated by free charges. This issue is scarcely addressed, even in conventional semiconductor devices, since the free charges are typically not stable. Here, we demonstrate an unambiguous tuning of the LAO/STO interface conductivity via free surface charges written using conducting atomic force microscopy (AFM). The modulation of the carrier density was found to be reversible, nonvolatile and surprisingly large, {approx}3 x 10{sup 13} cm{sup -2}, comparable to the maximum modulation by the normal field effect. Our finding reveal the efficiency of free charges in controlling the conductivity of this oxide interface, and suggest that this technique may be extended more generally to other oxide systems.

Charge mobility increase in indium-molybdenum oxide thin films by hydrogen doping

Energy Technology Data Exchange (ETDEWEB)

Catalán, S.; Álvarez-Fraga, L. [Instituto de Ciencia de Materiales de Madrid, Consejo Superior de Investigaciones Científicas (ICMM-CSIC), Cantoblanco, E-28049 Madrid (Spain); Salas, E. [Spline CRG, ESRF, 38043 Grenoble (France); Ramírez-Jiménez, R. [Departamento de Física, Escuela Politécnica Superior, Universidad Carlos III de Madrid, Avenida Universidad 30, Leganés, 28911 Madrid (Spain); Rodriguez-Palomo, A.; Andrés, A. de [Instituto de Ciencia de Materiales de Madrid, Consejo Superior de Investigaciones Científicas (ICMM-CSIC), Cantoblanco, E-28049 Madrid (Spain); Prieto, C., E-mail: cprieto@icmm.csic.es [Instituto de Ciencia de Materiales de Madrid, Consejo Superior de Investigaciones Científicas (ICMM-CSIC), Cantoblanco, E-28049 Madrid (Spain)

2016-11-15

Highlights: • The charge mobility in IMO films is correlated with its hydrogen content. • The mobility behavior is explained by the presence of OH{sup −} groups in IMO films. • Mo{sup 4+} is identified in transparent conductive IMO by X-ray absorption spectroscopy. - Abstract: The increase of charge mobility in transparent conductive indium molybdenum oxide (IMO) films is correlated with the presence of hydroxyl groups. The introduction of H{sub 2} in the chamber during sputtering deposition compensates the excess charge introduced by cationic Mo doping of indium oxide either by oxygen or hydroxyl interstitials. Films present a linear increase of carrier mobility correlated with H{sub 2} content only after vacuum annealing. This behavior is explained because vacuum annealing favors the removal of oxygen interstitials over that of hydroxyl groups. Since hydroxyl groups offer lower effective charge and smaller lattice distortions than those associated with interstitial oxygen, this compensation mechanism offers the conditions for the observed increase in mobility. Additionally, the short-range order around molybdenum is evaluated by extended X-ray absorption fine structure (EXAFS) spectroscopy, showing that Mo{sup 4+} is placed at the In site of the indium oxide.

EBIT trapping program

International Nuclear Information System (INIS)

Elliott, S.R.; Beck, B.; Beiersdorfer, P.; Church, D.; DeWitt, D.; Knapp, D.K.; Marrs, R.E.; Schneider, D.; Schweikhard, L.

1993-01-01

The LLNL electron beam ion trap provides the world's only source of stationary highly charged ions up to bare U. This unique capability makes many new atomic and nuclear physics experiments possible. (orig.)

Tunable Mobility in Double-Gated MoTe2 Field-Effect Transistor: Effect of Coulomb Screening and Trap Sites.

Science.gov (United States)

Ji, Hyunjin; Joo, Min-Kyu; Yi, Hojoon; Choi, Homin; Gul, Hamza Zad; Ghimire, Mohan Kumar; Lim, Seong Chu

2017-08-30

There is a general consensus that the carrier mobility in a field-effect transistor (FET) made of semiconducting transition-metal dichalcogenides (s-TMDs) is severely degraded by the trapping/detrapping and Coulomb scattering of carriers by ionic charges in the gate oxides. Using a double-gated (DG) MoTe 2 FET, we modulated and enhanced the carrier mobility by adjusting the top- and bottom-gate biases. The relevant mechanism for mobility tuning in this device was explored using static DC and low-frequency (LF) noise characterizations. In the investigations, LF-noise analysis revealed that for a strong back-gate bias the Coulomb scattering of carriers by ionized traps in the gate dielectrics is strongly screened by accumulation charges. This significantly reduces the electrostatic scattering of channel carriers by the interface trap sites, resulting in increased mobility. The reduction of the number of effective trap sites also depends on the gate bias, implying that owing to the gate bias, the carriers are shifted inside the channel. Thus, the number of active trap sites decreases as the carriers are repelled from the interface by the gate bias. The gate-controlled Coulomb-scattering parameter and the trap-site density provide new handles for improving the carrier mobility in TMDs, in a fundamentally different way from dielectric screening observed in previous studies.

Status and outlook of CHIP-TRAP: The Central Michigan University high precision Penning trap

Science.gov (United States)

Redshaw, M.; Bryce, R. A.; Hawks, P.; Gamage, N. D.; Hunt, C.; Kandegedara, R. M. E. B.; Ratnayake, I. S.; Sharp, L.

2016-06-01

At Central Michigan University we are developing a high-precision Penning trap mass spectrometer (CHIP-TRAP) that will focus on measurements with long-lived radioactive isotopes. CHIP-TRAP will consist of a pair of hyperbolic precision-measurement Penning traps, and a cylindrical capture/filter trap in a 12 T magnetic field. Ions will be produced by external ion sources, including a laser ablation source, and transported to the capture trap at low energies enabling ions of a given m / q ratio to be selected via their time-of-flight. In the capture trap, contaminant ions will be removed with a mass-selective rf dipole excitation and the ion of interest will be transported to the measurement traps. A phase-sensitive image charge detection technique will be used for simultaneous cyclotron frequency measurements on single ions in the two precision traps, resulting in a reduction in statistical uncertainty due to magnetic field fluctuations.

Abnormal Multiple Charge Memory States in Exfoliated Few-Layer WSe2 Transistors.

Science.gov (United States)

Chen, Mikai; Wang, Yifan; Shepherd, Nathan; Huard, Chad; Zhou, Jiantao; Guo, L J; Lu, Wei; Liang, Xiaogan

2017-01-24

To construct reliable nanoelectronic devices based on emerging 2D layered semiconductors, we need to understand the charge-trapping processes in such devices. Additionally, the identified charge-trapping schemes in such layered materials could be further exploited to make multibit (or highly desirable analog-tunable) memory devices. Here, we present a study on the abnormal charge-trapping or memory characteristics of few-layer WSe 2 transistors. This work shows that multiple charge-trapping states with large extrema spacing, long retention time, and analog tunability can be excited in the transistors made from mechanically exfoliated few-layer WSe 2 flakes, whereas they cannot be generated in widely studied few-layer MoS 2 transistors. Such charge-trapping characteristics of WSe 2 transistors are attributed to the exfoliation-induced interlayer deformation on the cleaved surfaces of few-layer WSe 2 flakes, which can spontaneously form ambipolar charge-trapping sites. Our additional results from surface characterization, charge-retention characterization at different temperatures, and density functional theory computation strongly support this explanation. Furthermore, our research also demonstrates that the charge-trapping states excited in multiple transistors can be calibrated into consistent multibit data storage levels. This work advances the understanding of the charge memory mechanisms in layered semiconductors, and the observed charge-trapping states could be further studied for enabling ultralow-cost multibit analog memory devices.

Integration of ammonia-plasma-functionalized graphene nanodiscs as charge trapping centers for nonvolatile memory applications

KAUST Repository

Wang, Jer-Chyi

2016-11-23

Graphene nanodiscs (GNDs), functionalized using NH3 plasma, as charge trapping sites (CTSs) for non-volatile memory applications have been investigated in this study. The fabrication process relies on the patterning of Au nanoparticles (Au-NPs), whose thicknesses are tuned to adjust the GND density and size upon etching. A GND density as high as 8 × 1011 cm−2 and a diameter of approximately 20 nm are achieved. The functionalization of GNDs by NH3 plasma creates Nsingle bondH+ functional groups that act as CTSs, as observed by Raman and Fourier transform infrared spectroscopy. This inherently enhances the density of CTSs in the GNDs, as a result, the memory window becomes more than 2.4 V and remains stable after 104 operating cycles. The charge loss is less than 10% for a 10-year data retention testing, making this low-temperature process suitable for low-cost non-volatile memory applications on flexible substrates.

Effect of Single-Electron Interface Trapping in Decanano MOSFETs: A 3D Atomistic Simulation Study

Science.gov (United States)

Asenov, Asen; Balasubramaniam, R.; Brown, A. R.; Davies, J. H.

2000-01-01

We study the effect of trapping/detrapping of a single-electron in interface states in the channel of n-type MOSFETs with decanano dimensions using 3D atomistic simulation techniques. In order to highlight the basic dependencies, the simulations are carried out initially assuming continuous doping charge, and discrete localized charge only for the trapped electron. The dependence of the random telegraph signal (RTS) amplitudes on the device dimensions and on the position of the trapped charge in the channel are studied in detail. Later, in full-scale, atomistic simulations assuming discrete charge for both randomly placed dopants and the trapped electron, we highlight the importance of current percolation and of traps with strategic position where the trapped electron blocks a dominant current path.

Crossover from band-like to thermally activated charge transport in organic transistors due to strain-induced traps

KAUST Repository

Mei, Yaochuan

2017-08-02

The temperature dependence of the charge-carrier mobility provides essential insight into the charge transport mechanisms in organic semiconductors. Such knowledge imparts critical understanding of the electrical properties of these materials, leading to better design of high-performance materials for consumer applications. Here, we present experimental results that suggest that the inhomogeneous strain induced in organic semiconductor layers by the mismatch between the coefficients of thermal expansion (CTE) of the consecutive device layers of field-effect transistors generates trapping states that localize charge carriers. We observe a universal scaling between the activation energy of the transistors and the interfacial thermal expansion mismatch, in which band-like transport is observed for similar CTEs, and activated transport otherwise. Our results provide evidence that a high-quality semiconductor layer is necessary, but not sufficient, to obtain efficient charge-carrier transport in devices, and underline the importance of holistic device design to achieve the intrinsic performance limits of a given organic semiconductor. We go on to show that insertion of an ultrathin CTE buffer layer mitigates this problem and can help achieve band-like transport on a wide range of substrate platforms.

Crossover from band-like to thermally activated charge transport in organic transistors due to strain-induced traps.

Science.gov (United States)

Mei, Yaochuan; Diemer, Peter J; Niazi, Muhammad R; Hallani, Rawad K; Jarolimek, Karol; Day, Cynthia S; Risko, Chad; Anthony, John E; Amassian, Aram; Jurchescu, Oana D

2017-08-15

The temperature dependence of the charge-carrier mobility provides essential insight into the charge transport mechanisms in organic semiconductors. Such knowledge imparts critical understanding of the electrical properties of these materials, leading to better design of high-performance materials for consumer applications. Here, we present experimental results that suggest that the inhomogeneous strain induced in organic semiconductor layers by the mismatch between the coefficients of thermal expansion (CTE) of the consecutive device layers of field-effect transistors generates trapping states that localize charge carriers. We observe a universal scaling between the activation energy of the transistors and the interfacial thermal expansion mismatch, in which band-like transport is observed for similar CTEs, and activated transport otherwise. Our results provide evidence that a high-quality semiconductor layer is necessary, but not sufficient, to obtain efficient charge-carrier transport in devices, and underline the importance of holistic device design to achieve the intrinsic performance limits of a given organic semiconductor. We go on to show that insertion of an ultrathin CTE buffer layer mitigates this problem and can help achieve band-like transport on a wide range of substrate platforms.

New levy on nitrogen oxide emissions: First 'refundable' pollution charge

International Nuclear Information System (INIS)

Andersson, Sus; Hanneberg, P.

1991-01-01

A new law imposing a charge on nitrogen oxide emissions from combustion installations will soon be coming into force in Sweden. The money generated by the charge will not stay in the exchequer, however, but will be repaid to the plants concerned in proportion to the amount of useful energy they produce. This will be the first environment levy in Sweden to be based on measurements of actual emissions. Emissions of sulphur and carbon dioxide are already taxed. These taxes, unlike other environmental charges, not only have an incentive function, but are also a source of income for the state

Magnetic monopole search with the MoEDAL test trapping detector

Directory of Open Access Journals (Sweden)

Katre Akshay

2016-01-01

Full Text Available IMoEDAL is designed to search for monopoles produced in high-energy Large Hadron Collider (LHC collisions, based on two complementary techniques: nucleartrack detectors for high-ionisation signatures and other highly ionising avatars of new physics, and trapping volumes for direct magnetic charge measurements with a superconducting magnetometer. The MoEDAL test trapping detector array deployed in 2012, consisting of over 600 aluminium samples, was analysed and found to be consistent with zero trapped magnetic charge. Stopping acceptances are obtained from a simulation of monopole propagation in matter for a range of charges and masses, allowing to set modelindependent and model-dependent limits on monopole production cross sections. Multiples of the fundamental Dirac magnetic charge are probed for the first time at the LHC.

Magnetic monopole search with the MoEDAL test trapping detector

Science.gov (United States)

Katre, Akshay

2016-11-01

IMoEDAL is designed to search for monopoles produced in high-energy Large Hadron Collider (LHC) collisions, based on two complementary techniques: nucleartrack detectors for high-ionisation signatures and other highly ionising avatars of new physics, and trapping volumes for direct magnetic charge measurements with a superconducting magnetometer. The MoEDAL test trapping detector array deployed in 2012, consisting of over 600 aluminium samples, was analysed and found to be consistent with zero trapped magnetic charge. Stopping acceptances are obtained from a simulation of monopole propagation in matter for a range of charges and masses, allowing to set modelindependent and model-dependent limits on monopole production cross sections. Multiples of the fundamental Dirac magnetic charge are probed for the first time at the LHC.

The influence of oxidation on space charge formation in gamma-irradiated low-density polyethylene

CERN Document Server

Chen, G; Xie, H K; Banford, H M; Davies, A E

2003-01-01

The research presented in this paper investigates the role of oxidation in the formation of space charge in gamma-irradiated low-density polyethylene after being electrically stressed under dc voltage. Polyethylene plaques both with and without antioxidant were irradiated up to 500 kGy using a sup 6 sup 0 Co gamma source and space charge distributions were measured using the piezoelectric induced pressure wave propagation method. It has been found that a large amount of positive charge evolved adjacent to the cathode in the sample without antioxidant and was clearly associated with oxidation of the surface. The amount of charge formed for a given applied stress increased with the dose absorbed by the material. A model has been proposed to explain the formation of space charge and its profile. The charge decay after the removal of the external applied stress is dominated by a process being controlled by the cathode interfacial stress (charge injection) rather than a conventional RC circuit model. On the other ...

Charging effects of PET under electron beam irradiation in a SEM

International Nuclear Information System (INIS)

Jbara, O; Rondot, S; Hadjadj, A; Patat, J M; Fakhfakh, S; Belhaj, M

2008-01-01

This paper deals with charge trapping and charge transport of polyethylene terephthalate (PET) polymer subjected to electron irradiation in a scanning electron microscope (SEM). Measurement of displacement current and leakage current using an arrangement adapted to the SEM allows the amount of trapped charge during and after electron irradiation to be determined and the charge mechanisms regulation to be studied. These mechanisms involve several parameters related to the electronic injection, the characteristics of insulator and the effects of the trapped charge itself. The dynamic trapping properties of PET samples are investigated and the time constants of charging are evaluated for various conditions of irradiation. The determination of the trapping cross section for electrons is possible by using the trapping rate at the onset of irradiation. Many physical processes are involved in the charging and discharging mechanisms; among them surface conduction is outlined. Through the control of irradiation conditions, various types of surface discharging (flashover phenomenon) behaviour are also observed. The strength of the electric field initiating surface discharge is estimated.

Effect of charged impurities and morphology on oxidation reactivity of graphene

Science.gov (United States)

Yamamoto, Mahito; Cullen, William; Einstein, Theodore; Fuhrer, Michael

2012-02-01

Chemical reactivity of single layer graphene supported on a substrate is observed to be enhanced over thicker graphene. Possible mechanisms for the enhancement are Fermi level fluctuations due to ionized impurities on the substrate, and structural deformation of graphene induced by coupling to the substrate geometry. Here, we study the substrate-dependent oxidation reactivity of graphene, employing various substrates such as SiO2, mica, SiO2 nanoparticle thin film, and hexagonal boron nitride, which exhibit different charged impurity concentrations and surface roughness. Graphene is prepared on each substrate via mechanical exfoliation and oxidized in Ar/O2 mixture at temperatures from 400-600 ^oC. After oxidation, the Raman spectrum of graphene is measured, and the Raman D to G peak ratio is used to quantify the density of point defects introduced by oxidation. We will discuss the correlations among the defect density in oxidized graphene, substrate charge inhomogeneity, substrate corrugations, and graphene layer thickness. This work has been supported by the University of Maryland NSF-MRSEC under Grant No. DMR 05-20471 with supplemental funding from NRI, and NSF-DMR 08-04976.

The InP - SiO2 interface: Electron tunneling into oxide traps

International Nuclear Information System (INIS)

Prasad, S.J.; Owen, S.J.T.

1985-01-01

Indium Phosphide is an attractive material for high-speed devices. Though many successful devices have been built and demonstrated, InP MISFET's still suffer from drain current drift. From the data current drift measurements, the shift in the threshold voltage ΔV was computed for different times. It was found that a linear relationship exists between √ΔV and log(t). When a positive bias-stress was applied to the gate of an MIS capacitor for a time t, the C-V cure shifted by an amount ΔV and again, a linear relationship was observed between √ΔV and log(t). This was verified on four different gate insulators: pyrolytic SiO 2 at 320 0 C and 360 0 C, plasma oxide at 300 0 C and photo CVD oxide at 225 0 C. These results can only be explained by a model in which electrons tunnel from the substrate into oxide traps

ATRAP - Progress Towards Trapped Antihydrogen

International Nuclear Information System (INIS)

Grzonka, D.; Goldenbaum, F.; Oelert, W.; Sefzick, T.; Zhang, Z.; Comeau, D.; Hessels, E.A.; Storry, C.H.; Gabrielse, G.; Larochelle, P.; Lesage, D.; Levitt, B.; Speck, A.; Haensch, T.W.; Pittner, H.; Walz, J.

2005-01-01

The ATRAP experiment at the CERN antiproton decelerator AD aims for a test of the CPT invariance by a high precision comparison of the 1s-2s transition in the hydrogen and the antihydrogen atom.Antihydrogen production is routinely operated at ATRAP and detailed studies have been performed in order to optimize the production efficiency of useful antihydrogen.For high precision measurements of atomic transitions cold antihydrogen in the ground state is required which must be trapped due to the low number of available antihydrogen atoms compared to the cold hydrogen beam used for hydrogen spectroscopy. To ensure a reasonable antihydrogen trapping efficiency a magnetic trap has to be superposed the nested Penning trap. First trapping tests of charged particles within a combined magnetic/Penning trap have started at ATRAP

ATRAP Progress Towards Trapped Antihydrogen

CERN Document Server

Grzonka, D; Gabrielse, G; Goldenbaum, F; Hänsch, T W; Hessels, E A; Larochelle, P; Le Sage, D; Levitt, B; Oelert, W; Pittner, H; Sefzick, T; Speck, A; Storry, C H; Walz, J; Zhang, Z

2005-01-01

The ATRAP experiment at the CERN antiproton decelerator AD aims for a test of the CPT invariance by a high precision comparison of the 1s‐2s transition in the hydrogen and the antihydrogen atom. Antihydrogen production is routinely operated at ATRAP and detailed studies have been performed in order to optimize the production efficiency of useful antihydrogen. For high precision measurements of atomic transitions cold antihydrogen in the ground state is required which must be trapped due to the low number of available antihydrogen atoms compared to the cold hydrogen beam used for hydrogen spectroscopy. To ensure a reasonable antihydrogen trapping efficiency a magnetic trap has to be superposed the nested Penning trap. First trapping tests of charged particles within a combined magnetic/Penning trap have started at ATRAP.

Low temperature luminescence and charge carrier trapping in a cryogenic scintillator Li{sub 2}MoO{sub 4}

Energy Technology Data Exchange (ETDEWEB)

Spassky, D.A., E-mail: deris2002@mail.ru [Institute of Physics, University of Tartu, Ravila 14c, 50411 Tartu (Estonia); Skobeltsyn Institute of Nuclear Physics, Moscow State University, 119991 Moscow (Russian Federation); Nagirnyi, V. [Institute of Physics, University of Tartu, Ravila 14c, 50411 Tartu (Estonia); Savon, A.E. [Skobeltsyn Institute of Nuclear Physics, Moscow State University, 119991 Moscow (Russian Federation); Kamenskikh, I.A. [Physics Faculty, Moscow State University, 119991 Moscow (Russian Federation); Barinova, O.P.; Kirsanova, S.V. [D. Mendeleyev University of Chemical Technology of Russia, 125047 Moscow (Russian Federation); Grigorieva, V.D.; Ivannikova, N.V.; Shlegel, V.N. [Nikolaev Institute of Inorganic Chemistry, SB RAS, 630090 Novosibirsk (Russian Federation); Aleksanyan, E. [Institute of Physics, University of Tartu, Ravila 14c, 50411 Tartu (Estonia); A.Alikhanyan National Science Laboratory, 2 Br. Alikhanyan Str., 0036 Yerevan (Armenia); Yelisseyev, A.P. [Sobolev Institute of Geology and Mineralogy, SB RAS, 630090 Novosibirsk (Russian Federation); Belsky, A. [Institute of Light and Matter, CNRS, University Lyon1, 69622 Villeurbanne (France)

2015-10-15

The luminescence and optical properties of promising cryogenic scintillator Li{sub 2}MoO{sub 4} were studied in the temperature region of 2–300 K. The data on luminescence spectra and decay characteristics, excitation spectra, thermostimulated luminescence curves and spectra as well as transmission and reflectivity spectra are presented for the single crystals grown by two different procedures, the conventional Czochralski method and the low-temperature gradient Czochralski technique. The bandgap of Li{sub 2}MoO{sub 4} is estimated from the analysis of transmission, luminescence excitation and reflectivity spectra. Up to three luminescence bands with the maxima at 1.98, 2.08 and 2.25 eV are detected in the emission spectra of crystals and their origin is discussed. In the thermoluminescence curves of both studied crystals, two high-intensity peaks were observed at 22 and 42 K, which are ascribed to the thermal release of self-trapped charge carriers. The coexistence of self-trapped electrons and holes allows one to explain the poor scintillation light yield of Li{sub 2}MoO{sub 4} at low temperatures. - Highlights: • Single crystals of Li{sub 2}MoO{sub 4} were grown by two methods. • The transparency cutoff (~4.3 eV) and bandgap values (<4.9 eV) are estimated. • The emission 2.08 eV is ascribed to self-trapped excitons and quenches at T>7 K. • Shallow traps considerably influence the energy transfer to emission centres. • Co-existence of self-trapped holes and electrons results in a low light yield.

Numerical experiments on charging of a spherical body in a plasma with Maxwellian distributions of charged particles

Science.gov (United States)

Krasovsky, Victor L.; Kiselyov, Alexander A.

2017-12-01

New results of numerical simulation of collisionless plasma perturbation caused by a sphere absorbing electrons and ions are presented. Consideration is given to nonstationary phenomena accompanying the process of charging as well as to plasma steady state reached at long times. Corresponding asymptotic values of charges of the sphere and trapped-ion cloud around it have been found along with self-consistent electric field pattern depending on parameters of the unperturbed plasma. It is established that contribution of the trapped ions to screening of the charged sphere can be quite significant, so that the screening becomes essentially nonlinear in nature. A simple interconnection between the sphere radius, electron and ion Debye lengths has been revealed as the condition for maximum trapped-ion effect. Kinetic structure of the space charge induced in the plasma is discussed with relation to the specific form of the unperturbed charged particle distribution functions.

Charge transport in electrically doped amorphous organic semiconductors.

Science.gov (United States)

Yoo, Seung-Jun; Kim, Jang-Joo

2015-06-01

This article reviews recent progress on charge generation by doping and its influence on the carrier mobility in organic semiconductors (OSs). The doping induced charge generation efficiency is generally low in OSs which was explained by the integer charge transfer model and the hybrid charge transfer model. The ionized dopants formed by charge transfer between hosts and dopants can act as Coulomb traps for mobile charges, and the presence of Coulomb traps in OSs broadens the density of states (DOS) in doped organic films. The Coulomb traps strongly reduce the carrier hopping rate and thereby change the carrier mobility, which was confirmed by experiments in recent years. In order to fully understand the doping mechanism in OSs, further quantitative and systematic analyses of charge transport characteristics must be accomplished. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Injection into electron plasma traps

International Nuclear Information System (INIS)

Gorgadze, Vladimir; Pasquini, Thomas A.; Fajans, Joel; Wurtele, Jonathan S.

2003-01-01

Computational studies and experimental measurements of plasma injection into a Malmberg-Penning trap reveal that the number of trapped particles can be an order of magnitude higher than predicted by a simple estimates based on a ballistic trapping model. Enhanced trapping is associated with a rich nonlinear dynamics generated by the space-charge forces of the evolving trapped electron density. A particle-in-cell simulation is used to identify the physical mechanisms that lead to the increase in trapped electrons. The simulations initially show strong two-stream interactions between the electrons emitted from the cathode and those reflected off the end plug of the trap. This is followed by virtual cathode oscillations near the injection region. As electrons are trapped, the initially hollow longitudinal phase-space is filled, and the transverse radial density profile evolves so that the plasma potential matches that of the cathode. Simple theoretical arguments are given that describe the different dynamical regimes. Good agreement is found between simulation and theory

Trap-assisted and Langevin-type recombination in organic light-emitting diodes

Science.gov (United States)

Wetzelaer, G. A. H.; Kuik, M.; Nicolai, H. T.; Blom, P. W. M.

2011-04-01

Trapping of charges is known to play an important role in the charge transport of organic semiconductors, but the role of traps in the recombination process has not been addressed. Here we show that the ideality factor of the current of organic light-emitting diodes (OLEDs) in the diffusion-dominated regime has a temperature-independent value of 2, which reveals that nonradiative trap-assisted recombination dominates the current. In contrast, the ideality factor of the light output approaches unity, demonstrating that luminance is governed by recombination of the bimolecular Langevin type. This apparent contradiction can be resolved by measuring the current and luminance ideality factor for a white-emitting polymer, where both free and trapped charge carriers recombine radiatively. With increasing bias voltage, Langevin recombination becomes dominant over trap-assisted recombination due to its stronger dependence on carrier density, leading to an enhancement in OLED efficiency.

Nitric Oxide Detection with Glassy Carbon Electrodes Coated with Charge-different Polymer Films

Directory of Open Access Journals (Sweden)

Jianping Lei

2005-04-01

Full Text Available Trace amounts of nitric oxide (NO have been determined in aqueous phosphate buffersolutions (pH=7.4 by using a glassy carbon electrode coated with three charge-different polymerfilms. The glassy carbon electrode was coated first with negatively charged Nafion film containingtetrakis(pentafluorophenylporphyrin iron(III chloride (Fe(IIITPFPP as the NO oxidation catalyst,and then with positively charged poly(acrylamide-co-diallyldimethylammonium chloride (PADDAand with neutral poly(dimethylsiloxane (silicone at the outermost layer. This polymer-coatedelectrode showed an excellent selectivity towards NO against possible concomitants in blood such asnitrite, ascorbic acid, uric acid, and dopamine. All current ratios between each concomitant and NOat the cyclic voltammogram was in 10-3 ~ 10-4. This type of electrode showed a detection limit of80 nM for NO. It was speculated from the electrochemical study in methanol that high-valent oxoiron(IV of Fe(TPFPP participated in the catalytic oxidation of NO.

Current-transport studies and trap extraction of hydrothermally grown ZnO nanotubes using gold Schottky diode

Energy Technology Data Exchange (ETDEWEB)

Amin, G.; Hussain, I.; Zaman, S.; Bano, N.; Nur, O.; Willander, M. [Department of Science and Technology, Campus Norrkoeping, Linkoeping University, 60174 Norrkoeping (Sweden)

2010-03-15

High-quality zinc oxide (ZnO) nanotubes (NTs) were grown by the hydrothermal technique on n-Si substrate. The room temperature (RT) current-transport mechanisms of Au Schottky diodes fabricated from ZnO NTs and nanorods (NRs) reference samples have been studied and compared. The tunneling mechanisms via deep-level states was found to be the main conduction process at low applied voltage but at the trap-filled limit voltage (V{sub TFL}) all traps were filled and the space-charge-limited current conduction was the dominating current-transport mechanism. The deep-level trap energy and the trap concentration for the NTs were obtained as {proportional_to}0.27 eV and 2.1 x 10{sup 16} cm{sup -3}, respectively. The same parameters were also extracted for the ZnO NRs. The deep-level states observed crossponds to zinc interstitials (Zn{sub i}), which are responsible for the violet emission. (Abstract Copyright [2010], Wiley Periodicals, Inc.)

Trap-assisted and Langevin-type recombination in organic light-emitting diodes

NARCIS (Netherlands)

Wetzelaer, G. A. H.; Kuik, M.; Nicolai, H. T.; Blom, P. W. M.

2011-01-01

Trapping of charges is known to play an important role in the charge transport of organic semiconductors, but the role of traps in the recombination process has not been addressed. Here we show that the ideality factor of the current of organic light-emitting diodes (OLEDs) in the

Enhancing Charge Carrier Lifetime in Metal Oxide Photoelectrodes through Mild Hydrogen Treatment

KAUST Repository

Jang, Ji-Wook

2017-08-25

Widespread application of solar water splitting for energy conversion is largely dependent on the progress in developing not only efficient but also cheap and scalable photoelectrodes. Metal oxides, which can be deposited with scalable techniques and are relatively cheap, are particularly interesting, but high efficiency is still hindered by the poor carrier transport properties (i.e., carrier mobility and lifetime). Here, a mild hydrogen treatment is introduced to bismuth vanadate (BiVO4), which is one of the most promising metal oxide photoelectrodes, as a method to overcome the carrier transport limitations. Time-resolved microwave and terahertz conductivity measurements reveal more than twofold enhancement of the carrier lifetime for the hydrogen-treated BiVO4, without significantly affecting the carrier mobility. This is in contrast to the case of tungsten-doped BiVO4, although hydrogen is also a donor type dopant in BiVO4. The enhancement in carrier lifetime is found to be caused by significant reduction of trap-assisted recombination, either via passivation or reduction of deep trap states related to vanadium antisite on bismuth or vanadium interstitials according to density functional theory calculations. Overall, these findings provide further insights on the interplay between defect modulation and carrier transport in metal oxides, which benefit the development of low-cost, highly-efficient solar energy conversion devices.

Atomic and nuclear physics with stored particles in ion traps

CERN Document Server

Kluge, H J; Herfurth, F; Quint, W

2002-01-01

Trapping and cooling techniques play an increasingly important role in many areas of science. This review concentrates on recent applications of ion traps installed at accelerator facilities to atomic and nuclear physics such as mass spectrometry of radioactive isotopes, weak interaction studies, symmetry tests, determination of fundamental constants, laser spectroscopy, and spectroscopy of highly-charged ions. In addition, ion traps are proven to be extremely efficient devices for (radioactive) ion beam manipulation as, for example, retardation, accumulation, cooling, beam cleaning, charge-breeding, and bunching.

Applicability of new spin trap agent, 2-diphenylphosphinoyl-2-methyl-3,4-dihydro-2H-pyrrole N-oxide, in biological system

International Nuclear Information System (INIS)

Karakawa, Tomohiro; Sato, Keizo; Muramoto, Yosuke; Mitani, Yoshihiro; Kitamado, Masataka; Iwanaga, Tatsuya; Nabeshima, Tetsuji; Maruyama, Kumiko; Nakagawa, Kazuko; Ishida, Kazuhiko; Sasamoto, Kazumi

2008-01-01

Electron spin resonance using spin-trapping is a useful technique for detecting direct reactive oxygen species, such as superoxide (O 2 .- ). However, the widely used spin trap 2,2-dimethyl-3,4-dihydro-2H-pyrrole N-oxide (DMPO) has several fundamental limitations in terms of half-life and stability. Recently, the new spin trap 2-diphenylphosphinoyl-2-methyl-3,4-dihydro-2H-pyrrole N-oxide (DPhPMPO) was developed by us. We evaluated the biological applicability of DPhPMPO to analyze O 2 .- in both cell-free and cellular systems. DPhPMPO had a larger rate constant for O 2 .- and formed more stable spin adducts for O 2 .- than DMPO in the xanthine/xanthine oxidase (X/XO) system. In the phorbol myristate acetate-activated neutrophil system, the detection potential of DPhPMPO for O 2 .- was significantly higher than that of DMPO (k DMPO = 13.95 M -1 s -1 , k DPhPMPO = 42.4 M -1 s -1 ). These results indicated that DPhPMPO is a potentially good candidate for trapping O 2 .- in a biological system

Dynamics of Oxidation of Aluminum Nanoclusters using Variable Charge Molecular-Dynamics Simulations on Parallel Computers

Science.gov (United States)

Campbell, Timothy; Kalia, Rajiv K.; Nakano, Aiichiro; Vashishta, Priya; Ogata, Shuji; Rodgers, Stephen

1999-06-01

Oxidation of aluminum nanoclusters is investigated with a parallel molecular-dynamics approach based on dynamic charge transfer among atoms. Structural and dynamic correlations reveal that significant charge transfer gives rise to large negative pressure in the oxide which dominates the positive pressure due to steric forces. As a result, aluminum moves outward and oxygen moves towards the interior of the cluster with the aluminum diffusivity 60% higher than that of oxygen. A stable 40 Å thick amorphous oxide is formed; this is in excellent agreement with experiments.

Positron trapping at defects in copper oxide superconductors

International Nuclear Information System (INIS)

McMullen, T.; Jena, P.; Khanna, S.N.; Li, Y.; Jensen, K.O.

1991-01-01

Positron states and lifetimes at defects in the copper oxide superconductors La 2-x Sr x CuO 4 , YBa 2 Cu 3 O 7-x , and Bi 2 Sr 2 CaCu 2 O 8+x are calculated with use of the superposed-atom model. In the Bi 2 Sr 2 CaCu 2 O 8+x compound, we find that the smaller metal-ion vacancies appear to only bind positrons weakly, while missing oxygens do not trap positrons. In contrast, metal-ion vacancies in La 2-x Sr x CuO 4 and YBa 2 Cu 3 O 7-x bind positrons by ∼1 eV, and oxygen-related defects appear to be the weak-binding sites in these materials. The sites that bind positrons only weakly, by energies ∼k BT , are of particular interest in view of the complex temperature dependences of the annihilation characteristics that are observed in these materials

Charge storage mechanisms of manganese oxide nanosheets and N-doped reduced graphene oxide aerogel for high-performance asymmetric supercapacitors

Science.gov (United States)

Iamprasertkun, Pawin; Krittayavathananon, Atiweena; Seubsai, Anusorn; Chanlek, Narong; Kidkhunthod, Pinit; Sangthong, Winyoo; Maensiri, Santi; Yimnirun, Rattikorn; Nilmoung, Sukanya; Pannopard, Panvika; Ittisanronnachai, Somlak; Kongpatpanich, Kanokwan; Limtrakul, Jumras; Sawangphruk, Montree

2016-01-01

Although manganese oxide- and graphene-based supercapacitors have been widely studied, their charge storage mechanisms are not yet fully investigated. In this work, we have studied the charge storage mechanisms of K-birnassite MnO2 nanosheets and N-doped reduced graphene oxide aerogel (N-rGOae) using an in situ X-ray absorption spectroscopy (XAS) and an electrochemical quart crystal microbalance (EQCM). The oxidation number of Mn at the MnO2 electrode is +3.01 at 0 V vs. SCE for the charging process and gets oxidized to +3.12 at +0.8 V vs. SCE and then reduced back to +3.01 at 0 V vs. SCE for the discharging process. The mass change of solvated ions, inserted to the layers of MnO2 during the charging process is 7.4 μg cm−2. Whilst, the mass change of the solvated ions at the N-rGOae electrode is 8.4 μg cm−2. An asymmetric supercapacitor of MnO2//N-rGOae (CR2016) provides a maximum specific capacitance of ca. 467 F g−1 at 1 A g−1, a maximum specific power of 39 kW kg−1 and a specific energy of 40 Wh kg−1 with a wide working potential of 1.6 V and 93.2% capacity retention after 7,500 cycles. The MnO2//N-rGOae supercapacitor may be practically used in high power and energy applications. PMID:27857225

Charge storage mechanisms of manganese oxide nanosheets and N-doped reduced graphene oxide aerogel for high-performance asymmetric supercapacitors

Science.gov (United States)

Iamprasertkun, Pawin; Krittayavathananon, Atiweena; Seubsai, Anusorn; Chanlek, Narong; Kidkhunthod, Pinit; Sangthong, Winyoo; Maensiri, Santi; Yimnirun, Rattikorn; Nilmoung, Sukanya; Pannopard, Panvika; Ittisanronnachai, Somlak; Kongpatpanich, Kanokwan; Limtrakul, Jumras; Sawangphruk, Montree

2016-11-01

Although manganese oxide- and graphene-based supercapacitors have been widely studied, their charge storage mechanisms are not yet fully investigated. In this work, we have studied the charge storage mechanisms of K-birnassite MnO2 nanosheets and N-doped reduced graphene oxide aerogel (N-rGOae) using an in situ X-ray absorption spectroscopy (XAS) and an electrochemical quart crystal microbalance (EQCM). The oxidation number of Mn at the MnO2 electrode is +3.01 at 0 V vs. SCE for the charging process and gets oxidized to +3.12 at +0.8 V vs. SCE and then reduced back to +3.01 at 0 V vs. SCE for the discharging process. The mass change of solvated ions, inserted to the layers of MnO2 during the charging process is 7.4 μg cm-2. Whilst, the mass change of the solvated ions at the N-rGOae electrode is 8.4 μg cm-2. An asymmetric supercapacitor of MnO2//N-rGOae (CR2016) provides a maximum specific capacitance of ca. 467 F g-1 at 1 A g-1, a maximum specific power of 39 kW kg-1 and a specific energy of 40 Wh kg-1 with a wide working potential of 1.6 V and 93.2% capacity retention after 7,500 cycles. The MnO2//N-rGOae supercapacitor may be practically used in high power and energy applications.

Trapping and Evolution Dynamics of Ultracold Two-Component Plasmas

International Nuclear Information System (INIS)

Choi, J.-H.; Knuffman, B.; Zhang, X. H.; Povilus, A. P.; Raithel, G.

2008-01-01

We demonstrate the trapping of a strongly magnetized, quasineutral ultracold plasma in a nested Penning trap with a background field of 2.9 T. Electrons remain trapped in this system for several milliseconds. Early in the evolution, the dynamics are driven by a breathing-mode oscillation in the ionic charge distribution, which modulates the electron trap depth. Over longer times scales, the electronic component undergoes cooling. Trap loss resulting from ExB drift is characterized

Ion trapping within the dust grain plasma sheath

International Nuclear Information System (INIS)

Jovanovic, D.; Shukla, P.K.

2002-01-01

One of the most important and still unresolved problems in the physics of dusty plasmas is the determination of the dust charge. The grains are not directly accessible to measurements and it is necessary to have a reliable theoretical model of the electron and ion dynamics inside the Debye sphere for the interpretation of the relevant experimental data, which include also the effects of the surrounding electron and ion clouds. Recent computer simulations [6] and laboratory experiments [9] indicate that the plasma sheath is dominated by trapped ions, orbiting the grain on closed trajectories at distances smaller than the Debye radius, that cannot be accounted for by the classical theories. We present the first analytical, fully self-consistent, calculations of the electrostatic shielding of a charged dust grain in a collisional plasma. In the regime when the mean free path for the ion-dust collisions is larger than that for the ion-neutral collisions, we solve the kinetic equation for the ions, coupled with Boltzmann distributed electrons and Poisson's equation. The ion velocity distribution function, in the form of a spherically symmetric ion hole, is found to be anisotropic in the presence of charge-exchange collisions. The number of trapped ions and their spatial distribution are determined from the interplay between the collective plasma interaction and the collisional trapping/de-trapping. The stationary state results from the self-tuning of the trapped ion density by the feedback based on the nonlocality of the collisional integral, and on the ion mixing in the radial direction along elongated orbits. Our results confirm the existence of a strong Debye shielding of the dust charge, allowing also the over-population of the trapped ion distribution (ion hump)

The Multipole Plasma Trap-PIC Modeling Results

Science.gov (United States)

Hicks, Nathaniel; Bowman, Amanda; Godden, Katarina

2017-10-01

A radio-frequency (RF) multipole structure is studied via particle-in-cell computer modeling, to assess the response of quasi-neutral plasma to the imposed RF fields. Several regimes, such as pair plasma, antimatter plasma, and conventional (ion-electron) plasma are considered. In the case of equal charge-to-mass ratio of plasma species, the effects of the multipole field are symmetric between positive and negative particles. In the case of a charge-to-mass disparity, the multipole RF parameters (frequency, voltage, structure size) may be chosen such that the light species (e.g. electrons) is strongly confined, while the heavy species (e.g. positive ions) does not respond to the RF field. In this case, the trapped negative space charge creates a potential well that then traps the positive species. 2D and 3D particle-in-cell simulations of this concept are presented, to assess plasma response and trapping dependences on multipole order, consequences of the formation of an RF plasma sheath, and the effects of an axial magnetic field. The scalings of trapped plasma parameters are explored in each of the mentioned regimes, to guide the design of prospective experiments investigating each. Supported by U.S. NSF/DOE Partnership in Basic Plasma Science and Engineering Grant PHY-1619615.

Charging and heat collection by a positively charged dust grain in a plasma.

Science.gov (United States)

Delzanno, Gian Luca; Tang, Xian-Zhu

2014-07-18

Dust particulates immersed in a quasineutral plasma can emit electrons in several important applications. Once electron emission becomes strong enough, the dust enters the positively charged regime where the conventional orbital-motion-limited (OML) theory can break down due to potential-well effects on trapped electrons. A minimal modification of the trapped-passing boundary approximation in the so-called OML(+) approach is shown to accurately predict the dust charge and heat collection flux for a wide range of dust size and temperature.

Electrocatalytic glucose oxidation at gold and gold-carbon nanoparticulate film prepared from oppositely charged nanoparticles

International Nuclear Information System (INIS)

Karczmarczyk, Aleksandra; Celebanska, Anna; Nogala, Wojciech; Sashuk, Volodymyr; Chernyaeva, Olga; Opallo, Marcin

2014-01-01

Graphical abstract: - Highlights: • Gold nanoparticulate film electrodes were prepared by layer-by-layer method from oppositely charged nanoparticles. • Positively charged nanoparticles play dominant role in glucose oxidation in alkaline solution. • Gold and gold-carbon nanoparticulate film electrodes exhibit similar glucose oxidation current and onset potential. - Abstract: Electrocatalytic oxidation of glucose was studied at nanoparticulate gold and gold-carbon film electrodes. These electrodes were prepared by a layer-by-layer method without application of any linker molecules. Gold nanoparticles were stabilized by undecane thiols functionalized by trimethyl ammonium or carboxylate groups, whereas the carbon nanoparticles were covered by phenylsulfonate functionalities. The gold nanoparticulate electrodes were characterized by UV-vis and XPS spectroscopy, atomic force microscopy and voltammetry, before and after heat-treatment. Heat-treatment facilitates the aggregation of the nanoparticles and affects the structure of the film. The comparison of the results obtained with film electrodes prepared from gold nanoparticles with the same charge and with gold-carbon nanoparticulate electrodes, proved that positively charged nanoparticles are responsible for the high electrocatalytic activity, whereas negatively charged ones act rather as a linker of the film

Plasma treatment effect on charge carrier concentrations and surface traps in a-InGaZnO thin-film transistors

Energy Technology Data Exchange (ETDEWEB)

Kim, Jae-Sung; Xing Piao, Ming; Jang, Ho-Kyun; Kim, Gyu-Tae, E-mail: gtkim@korea.ac.kr [School of Electrical Engineering, Korea University, Seoul 136-701 (Korea, Republic of); Joo, Min-Kyu [School of Electrical Engineering, Korea University, Seoul 136-701 (Korea, Republic of); IMEP-LAHC, Grenoble INP, Minatec, CS 50257, 38016 Grenoble (France); Ahn, Seung-Eon [School of Electrical Engineering, Korea University, Seoul 136-701 (Korea, Republic of); Samsung Advanced Institute of Technology, Samsung Electronics Corporations, Yongin, Gyeonggi-Do 446-712 (Korea, Republic of); Choi, Yong-Hee [School of Electrical Engineering, Korea University, Seoul 136-701 (Korea, Republic of); Semiconductor R and D Center, Samsung Electronics, Hwasung, Gyeonggi-do 445-701 (Korea, Republic of)

2014-03-21

Various plasma treatment effects such as oxygen (O{sub 2}), nitrogen (N{sub 2}), and argon (Ar) on amorphous indium gallium zinc oxide thin-film transistors (a-IGZO TFTs) are investigated. To study oxygen stoichiometry in a-IGZO TFTs with respect to various plasma environments, X-ray photoelectron spectroscopy was employed. The results showed that oxygen vacancies were reduced by O{sub 2} and N{sub 2} plasmas while they were increased after Ar plasma treatment. Additionally, the effects of plasma treatment on trap distribution in bulk and surface channels were explored by means of low-frequency noise analysis. Details of the mechanisms used for generating and restoring traps on the surface and bulk channel are presented.

Direct probing of electron and hole trapping into nano-floating-gate in organic field-effect transistor nonvolatile memories

Energy Technology Data Exchange (ETDEWEB)

Cui, Ze-Qun; Wang, Shun; Chen, Jian-Mei; Gao, Xu; Dong, Bin, E-mail: wangsd@suda.edu.cn, E-mail: chilf@suda.edu.cn, E-mail: bdong@suda.edu.cn; Chi, Li-Feng, E-mail: wangsd@suda.edu.cn, E-mail: chilf@suda.edu.cn, E-mail: bdong@suda.edu.cn; Wang, Sui-Dong, E-mail: wangsd@suda.edu.cn, E-mail: chilf@suda.edu.cn, E-mail: bdong@suda.edu.cn [Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Institute of Functional Nano and Soft Materials (FUNSOM), Soochow University, Suzhou, Jiangsu 215123 (China)

2015-03-23

Electron and hole trapping into the nano-floating-gate of a pentacene-based organic field-effect transistor nonvolatile memory is directly probed by Kelvin probe force microscopy. The probing is straightforward and non-destructive. The measured surface potential change can quantitatively profile the charge trapping, and the surface characterization results are in good accord with the corresponding device behavior. Both electrons and holes can be trapped into the nano-floating-gate, with a preference of electron trapping than hole trapping. The trapped charge quantity has an approximately linear relation with the programming/erasing gate bias, indicating that the charge trapping in the device is a field-controlled process.

Direct probing of electron and hole trapping into nano-floating-gate in organic field-effect transistor nonvolatile memories

International Nuclear Information System (INIS)

Cui, Ze-Qun; Wang, Shun; Chen, Jian-Mei; Gao, Xu; Dong, Bin; Chi, Li-Feng; Wang, Sui-Dong

2015-01-01

Electron and hole trapping into the nano-floating-gate of a pentacene-based organic field-effect transistor nonvolatile memory is directly probed by Kelvin probe force microscopy. The probing is straightforward and non-destructive. The measured surface potential change can quantitatively profile the charge trapping, and the surface characterization results are in good accord with the corresponding device behavior. Both electrons and holes can be trapped into the nano-floating-gate, with a preference of electron trapping than hole trapping. The trapped charge quantity has an approximately linear relation with the programming/erasing gate bias, indicating that the charge trapping in the device is a field-controlled process

Generation and confinement of mobile charges in buried oxide of SOI substrates; Generation et confinement de charges mobiles dans les oxydes enterres de substrats SOI

Energy Technology Data Exchange (ETDEWEB)

Gruber, O.; Krawiec, S.; Musseau, O.; Paillet, Ph.; Courtot-Descharles, A. [CEA Bruyeres-le-Chatel, DIF, 91 (France)

1999-07-01

We analyze the mechanisms of generation and confinement of mobile protons resulting from hydrogen annealing of SOI buried oxides. This study of the mechanisms of generation and confinement of mobile protons in the buried oxide of SOI wafers emphasizes the importance of H+ diffusion in the oxide in the formation of a mobile charge. Under specific electric field conditions the irradiation of these devices results in a pinning of this mobile charge at the bottom Si-SiO{sub 2} interface. Ab initio calculations are in progress to investigate the possible precursor defects in the oxide and detail the mechanism for mobile proton generation and confinement. (authors)

First two operational years of the electron-beam ion trap charge breeder at the National Superconducting Cyclotron Laboratory

Directory of Open Access Journals (Sweden)

A. Lapierre

2018-05-01

Full Text Available The electron-beam ion trap (EBIT charge breeder of the ReA post-accelerator, located at the National Superconducting Cyclotron Laboratory (Michigan State University, started on-line operation in September 2015. Since then, the EBIT has delivered many pilot beams of stable isotopes and several rare-isotope beams. An operating aspect of the ReA EBIT is the breeding of high charge states to reach high reaccelerated beam energies. Efficiencies in single charge states of more than 20% were measured with ^{39}K^{15+}, ^{85}Rb^{27+}, ^{47}K^{17+}, and ^{34}Ar^{15+}. Producing high charge states demands long breeding times. This reduces the ejection frequency and, hence, increases the number of ions ejected per pulse. Another operating aspect is the ability to spread the distribution in time of the ejected ion pulses to lower the instantaneous rate delivered to experiments. Pulse widths were stretched from a natural 25  μs up to ∼70  ms. This publication reviews the progress of the ReA EBIT system over the years and presents the results of charge-breeding efficiency measurements and pulse-stretching tests obtained with stable- and rare-isotope beams. Studies performed with high sensitivity to identify and quantify stable-isotope contaminants from the EBIT are also presented, along with a novel method for purifying beams.

Fe atoms trapped on graphene as a potential efficient catalyst for room-temperature complete oxidation of formaldehyde: a first-principles investigation

KAUST Repository

Guo, Huimin

2017-03-24

We investigated the oxidation of formaldehyde, one of the major indoor air pollutants, into CO2 and H2O over Fe atoms trapped in defects on graphene by first-principles based calculations. These trapped Fe atoms are not only stable to withstand interference from the reaction environments but are also efficient in catalyzing the reactions between coadsorbed O-2 and formaldehyde. The oxidation of formaldehyde starts with the formation of a peroxide-like intermediate and continues by its dissociation into. eta(1)-OCHO coadsorbed with an OH radical. Then, the adsorbed OCHO undergoes conformational changes and hydride transfer, leading to the formation of H2O and CO2. Subsequent adsorption of O2 or formaldehyde facilitates desorption of H2O and a new reaction cycle initiates. The calculated barriers for formation and dissociation of the peroxide-like intermediate are 0.43 and 0.40 eV, respectively, and those for conformation changes and hydride transfer are 0.47 and 0.13 eV, respectively. These relatively low barriers along the reaction path suggest the potential high catalytic performance of trapped Fe atoms for formaldehyde oxidation.

Fe atoms trapped on graphene as a potential efficient catalyst for room-temperature complete oxidation of formaldehyde: a first-principles investigation

KAUST Repository

Guo, Huimin; Li, Min; Liu, Xin; Meng, Changgong; Linguerri, Roberto; Han, Yu; Chambaud, Gilberte

2017-01-01

We investigated the oxidation of formaldehyde, one of the major indoor air pollutants, into CO2 and H2O over Fe atoms trapped in defects on graphene by first-principles based calculations. These trapped Fe atoms are not only stable to withstand interference from the reaction environments but are also efficient in catalyzing the reactions between coadsorbed O-2 and formaldehyde. The oxidation of formaldehyde starts with the formation of a peroxide-like intermediate and continues by its dissociation into. eta(1)-OCHO coadsorbed with an OH radical. Then, the adsorbed OCHO undergoes conformational changes and hydride transfer, leading to the formation of H2O and CO2. Subsequent adsorption of O2 or formaldehyde facilitates desorption of H2O and a new reaction cycle initiates. The calculated barriers for formation and dissociation of the peroxide-like intermediate are 0.43 and 0.40 eV, respectively, and those for conformation changes and hydride transfer are 0.47 and 0.13 eV, respectively. These relatively low barriers along the reaction path suggest the potential high catalytic performance of trapped Fe atoms for formaldehyde oxidation.

Adsorption of polyelectrolytes and charged block copolymers on oxides consequences for colloidal stability

NARCIS (Netherlands)

Hoogeveen, N.G.

1996-01-01

The aim of the study described in this thesis was to examine the adsorption properties of polyelectrolytes and charged block copolymers on oxides, and the effect of these polymers on the colloidal stability of oxidic dispersions. For this purpose the interaction of some well-characterised

(Anti)hydrogen recombination studies in a nested Penning trap

International Nuclear Information System (INIS)

Quint, W.; Kaiser, R.; Hall, D.; Gabrielse, G.

1993-01-01

Extremely cold antiprotons, stored in Penning trap at 4 K, open the way toward the production and study of cold antihydrogen. We have begun experimentally investigating the possibility to recombine cold positrons and antiprotons within nested Penning traps. Trap potentials are adjusted to allow cold trapped protons (and positive helium ions) to pass through cold trapped electrons. Electrons, protons and ions are counted by ejecting them to a cold channel plate and by nondestructive radiofrequency techniques. The effect of the space charge of one trapped species upon another trapped species passing through is clearly observed. (orig.)

Trapped antihydrogen

CERN Document Server

Butler, E; Ashkezari, M D; Baquero-Ruiz, M; Bertsche, W; Bowe, P D; Cesar, C L; Chapman, S; Charlton, M; Deller, A; Eriksson, S; Fajans, J; Friesen, T; Fujiwara, M C; Gill, D R; Gutierrez, A; Hangst, J S; Hardy, W N; Hayden, M E; Humphries, A J; Hydomako, R; Jenkins, M J; Jonsell, S; Jørgensen, L V; Kemp, S L; Kurchaninov, L; Madsen, N; Menary, S; Nolan, P; Olchanski, K; Olin, A; Povilus, A; Pusa, P; Rasmussen, C Ø; Robicheaux, F; Sarid, E; Seif el Nasr, S; Silveira, D M; So, C; Storey, J W; Thompson, R I; van der Werf, D P; Wurtele, J S; Yamazaki,Y

2012-01-01

Precision spectroscopic comparison of hydrogen and antihydrogen holds the promise of a sensitive test of the Charge-Parity-Time theorem and matter-antimatter equivalence. The clearest path towards realising this goal is to hold a sample of antihydrogen in an atomic trap for interrogation by electromagnetic radiation. Achieving this poses a huge experimental challenge, as state-of-the-art magnetic-minimum atom traps have well depths of only ∼1 T (∼0.5 K for ground state antihydrogen atoms). The atoms annihilate on contact with matter and must be ‘born’ inside the magnetic trap with low kinetic energies. At the ALPHA experiment, antihydrogen atoms are produced from antiprotons and positrons stored in the form of non-neutral plasmas, where the typical electrostatic potential energy per particle is on the order of electronvolts, more than 104 times the maximum trappable kinetic energy. In November 2010, ALPHA published the observation of 38 antiproton annihilations due to antihydrogen atoms that had been ...

Interpreting anomalies observed in oxide semiconductor TFTs under negative and positive bias stress

Directory of Open Access Journals (Sweden)

Jong Woo Jin

2016-08-01

Full Text Available Oxide semiconductor thin-film transistors can show anomalous behavior under bias stress. Two types of anomalies are discussed in this paper. The first is the shift in threshold voltage (VTH in a direction opposite to the applied bias stress, and highly dependent on gate dielectric material. We attribute this to charge trapping/detrapping and charge migration within the gate dielectric. We emphasize the fundamental difference between trapping/detrapping events occurring at the semiconductor/dielectric interface and those occurring at gate/dielectric interface, and show that charge migration is essential to explain the first anomaly. We model charge migration in terms of the non-instantaneous polarization density. The second type of anomaly is negative VTH shift under high positive bias stress, with logarithmic evolution in time. This can be argued as electron-donating reactions involving H2O molecules or derived species, with a reaction rate exponentially accelerated by positive gate bias and exponentially decreased by the number of reactions already occurred.

Interpreting anomalies observed in oxide semiconductor TFTs under negative and positive bias stress

Energy Technology Data Exchange (ETDEWEB)

Jin, Jong Woo [LPICM, CNRS, Ecole Polytechnique, Université Paris Saclay, 91128, Palaiseau (France); Nathan, Arokia, E-mail: an299@cam.ac.uk [Engineering Department, University of Cambridge, Cambridge, CB3 0FA (United Kingdom); Barquinha, Pedro; Pereira, Luís; Fortunato, Elvira; Martins, Rodrigo [i3N/CENIMAT, Department of Materials Science, Faculty of Science and Technology, Universidade NOVA de Lisboa and CEMOP/UNINOVA, Campus de Caparica, 2829-516 Caparica (Portugal); Cobb, Brian [Holst Centre/TNO, Eindhoven, 5656 AE (Netherlands)

2016-08-15

Oxide semiconductor thin-film transistors can show anomalous behavior under bias stress. Two types of anomalies are discussed in this paper. The first is the shift in threshold voltage (V{sub TH}) in a direction opposite to the applied bias stress, and highly dependent on gate dielectric material. We attribute this to charge trapping/detrapping and charge migration within the gate dielectric. We emphasize the fundamental difference between trapping/detrapping events occurring at the semiconductor/dielectric interface and those occurring at gate/dielectric interface, and show that charge migration is essential to explain the first anomaly. We model charge migration in terms of the non-instantaneous polarization density. The second type of anomaly is negative V{sub TH} shift under high positive bias stress, with logarithmic evolution in time. This can be argued as electron-donating reactions involving H{sub 2}O molecules or derived species, with a reaction rate exponentially accelerated by positive gate bias and exponentially decreased by the number of reactions already occurred.

Charge compensation and electrostatic transferability in three entropy-stabilized oxides: Results from density functional theory calculations

Energy Technology Data Exchange (ETDEWEB)

Rak, Zs.; Rost, C. M.; Lim, M.; Maria, J.-P.; Brenner, D. W. [Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695-7907 (United States); Sarker, P.; Toher, C.; Curtarolo, S. [Department of Mechanical Engineering and Materials Science and Center for Materials Genomics, Duke University, Durham, North Carolina 27708 (United States)

2016-09-07

Density functional theory calculations were carried out for three entropic rocksalt oxides, (Mg{sub 0.1}Co{sub 0.1}Ni{sub 0.1}Cu{sub 0.1}Zn{sub 0.1})O{sub 0.5}, termed J14, and J14 + Li and J14 + Sc, to understand the role of charge neutrality and electronic states on their properties, and to probe whether simple expressions may exist that predict stability. The calculations predict that the average lattice constants of the ternary structures provide good approximations to that of the random structures. For J14, Bader charges are transferable between the binary, ternary, and random structures. For J14 + Sc and J14 + Li, average Bader charges in the entropic structures can be estimated from the ternary compositions. Addition of Sc to J14 reduces the majority of Cu, which show large displacements from ideal lattice sites, along with reduction of a few Co and Ni cations. Addition of Li to J14 reduces the lattice constant, consistent with experiment, and oxidizes some of Co as well as some of Ni and Cu. The Bader charges and spin-resolved density of states (DOS) for Co{sup +3} in J14 + Li are very different from Co{sup +2}, while for Cu and Ni the Bader charges form continuous distributions and the two DOS are similar for the two oxidation states. Experimental detection of different oxidation states may therefore be challenging for Cu and Ni compared to Co. Based on these results, empirical stability parameters for these entropic oxides may be more complicated than those for non-oxide entropic solids.

Antimatter Plasmas in a Multipole Trap for Antihydrogen

CERN Document Server

Andresen, G B; Boston, A; Bowe, P D; Cesar, C L; Chapman, S; Charlton, M; Chartier, M; Deutsch, A; Fajans, J; Fujiwara, M C; Funakoshi, R; Gill, D R; Gomberoff, K; Hangst, J S; Hayano, R S; Hydomako, R; Jenkins, M J; Jørgensen, L V; Kurchaninov, L; Madsen, N; Nolan, P; Olchanski, K; Olin, A; Povilus, A; Robicheaux, F; Sarid, E; Silveira, D M; Storey, J W; Telle, H H; Thompson, R I; van der Werf, D P; Wurtele, J S; Yamazaki, Y

2007-01-01

We have demonstrated storage of plasmas of the charged constituents of the antihydrogen atom, antiprotons and positrons, in a Penning trap surrounded by a minimum-B magnetic trap designed for holding neutral antiatoms. The neutral trap comprises a superconducting octupole and two superconducting, solenoidal mirror coils. We have measured the storage lifetimes of antiproton and positron plasmas in the combined Penning-neutral trap, and compared these to lifetimes without the neutral trap fields. The magnetic well depth was 0.6 T, deep enough to trap ground state antihydrogen atoms of up to about 0.4 K in temperature. We have demonstrated that both particle species can be stored for times long enough to permit antihydrogen production and trapping studies.

Antimatter plasmas in a multipole trap for antihydrogen.

Science.gov (United States)

Andresen, G; Bertsche, W; Boston, A; Bowe, P D; Cesar, C L; Chapman, S; Charlton, M; Chartier, M; Deutsch, A; Fajans, J; Fujiwara, M C; Funakoshi, R; Gill, D R; Gomberoff, K; Hangst, J S; Hayano, R S; Hydomako, R; Jenkins, M J; Jørgensen, L V; Kurchaninov, L; Madsen, N; Nolan, P; Olchanski, K; Olin, A; Povilus, A; Robicheaux, F; Sarid, E; Silveira, D M; Storey, J W; Telle, H H; Thompson, R I; van der Werf, D P; Wurtele, J S; Yamazaki, Y

2007-01-12

We have demonstrated storage of plasmas of the charged constituents of the antihydrogen atom, antiprotons and positrons, in a Penning trap surrounded by a minimum-B magnetic trap designed for holding neutral antiatoms. The neutral trap comprises a superconducting octupole and two superconducting, solenoidal mirror coils. We have measured the storage lifetimes of antiproton and positron plasmas in the combined Penning-neutral trap, and compared these to lifetimes without the neutral trap fields. The magnetic well depth was 0.6 T, deep enough to trap ground state antihydrogen atoms of up to about 0.4 K in temperature. We have demonstrated that both particle species can be stored for times long enough to permit antihydrogen production and trapping studies.

Effect of Titanium Dioxide Dopping on Charge Trapping in ...

African Journals Online (AJOL)

The charge storage properties of corona charged pure and TiO2 doped polystyrene (PS) films have been studied. Thermally stimulated charge decay and open circuit thermally stimulated charges were measured. A half-value charge decay temperature T1/2 ∼ 140oC is optimum at 3 wt % TiO2 doping. This implies that ...

Influence of Structure and Charge State on the Mechanism of CO Oxidation on Gold Clusters

Science.gov (United States)

Johnson, Grant; Burgel, Christian; Reilly, Nelly; Mitric, Roland; Kimble, Michele; Tyo, Eric; Castleman, A. W.; Bonacic-Koutecky, Vlasta

2008-05-01

Gas-phase reactivity experiments and high level theoretical calculations have been employed to study the interaction of both positively and negatively charged gold oxide clusters with carbon monoxide (CO). We demonstrate that for negatively charged clusters CO is oxidized to CO2 by an Eley-Ridel-like (ER-) mechanism involving the attack of CO on oxygen rather than gold. In contrast, for positively charged clusters, the oxidation reaction may also occur by a Langmuir-Hinshelwood-like (LH-) mechanism involving the initial binding of CO to a gold atom followed by subsequent migration to an oxygen site. The LH mechanism is made possible through the large energy gain associated with the adsorption of two CO molecules onto cationic gold clusters. Structure-reactivity relationships are also established which demonstrate that terminally bound oxygen atoms are the most active sites for CO oxidation. Bridge bonded oxygen atoms and molecularly bound O2 units are shown to be inert. We also establish an inverse relationship between the binding energy of CO to gold clusters and the energy of the clusters lowest unoccupied molecular orbital (LUMO).

Electron beam ion trap bi-annual report 1996/1997

International Nuclear Information System (INIS)

Schneider, D.

1999-01-01

The research of the EBIT (Electron Beam Ion Trap) program in N Division of the Physics and Space Technology Directorate at LLNL continues to contribute significantly to the understanding of physical processes with low energy highly charged ions in atomic physics, plasma physics, and material science. Low-energy highly charged ions (up to U 92+ ), provided by the EBIT facilities, provide a unique laboratory opportunity to study high field effects in atomic structures and dynamic interaction processes. The formation, existence, and structure of highly charged ions in astrophysical environments and laboratory plasmas make highly charged ions desirable for diagnosing various plasma conditions. The strong interaction of highly charged ions with matter and the response of solid surfaces make them a sensitive analysis tool and possibly a future capability for materials modifications at the atomic scale (nano technology). These physical applications require a good understanding and careful study of the dynamics of the interactions of the ions with complex systems. The EBIT group hosted an international conference and a workshop on trapped charged particles. The various talks and discussions showed that physics research with trapped charged particles is a very active and attractive area of innovative research, and provides a basis for research efforts in new areas. It also became obvious that the EBIT/RETRAP project has unique capabilities to perform important new experiments with trapped very highly charged ions at rest, which are complementary to and competitive with research at heavy ion storage rings and other trapping facilities planned or in operation in Europe, Japan, and the United States. Atomic structure research at EBIT provides ever better and more experimental complete benchmark data, supplying data needed to improve atomic theories. Research highlights through 1996 and 1997 include hyperfine structure measurements in H-like ions, QED studies, lifetime and

Analytical models for total dose ionization effects in MOS devices.

Energy Technology Data Exchange (ETDEWEB)

Campbell, Phillip Montgomery; Bogdan, Carolyn W.

2008-08-01

MOS devices are susceptible to damage by ionizing radiation due to charge buildup in gate, field and SOI buried oxides. Under positive bias holes created in the gate oxide will transport to the Si / SiO{sub 2} interface creating oxide-trapped charge. As a result of hole transport and trapping, hydrogen is liberated in the oxide which can create interface-trapped charge. The trapped charge will affect the threshold voltage and degrade the channel mobility. Neutralization of oxidetrapped charge by electron tunneling from the silicon and by thermal emission can take place over long periods of time. Neutralization of interface-trapped charge is not observed at room temperature. Analytical models are developed that account for the principal effects of total dose in MOS devices under different gate bias. The intent is to obtain closed-form solutions that can be used in circuit simulation. Expressions are derived for the aging effects of very low dose rate radiation over long time periods.

Properties of slow traps of ALD Al{sub 2}O{sub 3}/GeO{sub x}/Ge nMOSFETs with plasma post oxidation

Energy Technology Data Exchange (ETDEWEB)

Ke, M., E-mail: kiramn@mosfet.t.u-tokyo.ac.jp; Yu, X.; Chang, C.; Takenaka, M.; Takagi, S. [Department of Electrical Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan and JST-CREST, K' s Gobancho 6F, 7 Gobancho, Chiyoda-ku, Tokyo 102-0076 (Japan)

2016-07-18

The realization of Ge gate stacks with a small amount of slow trap density as well as thin equivalent oxide thickness and low interface state density (D{sub it}) is a crucial issue for Ge CMOS. In this study, we examine the properties of slow traps, particularly the location of slow traps, of Al{sub 2}O{sub 3}/GeO{sub x}/n-Ge and HfO{sub 2}/Al{sub 2}O{sub 3}/GeO{sub x}/n-Ge MOS interfaces with changing the process and structural parameters, formed by atomic layer deposition (ALD) of Al{sub 2}O{sub 3} and HfO{sub 2}/Al{sub 2}O{sub 3} combined with plasma post oxidation. It is found that the slow traps can locate in the GeO{sub x} interfacial layer, not in the ALD Al{sub 2}O{sub 3} layer. Furthermore, we study the time dependence of channel currents in the Ge n-MOSFETs with 5-nm-thick Al{sub 2}O{sub 3}/GeO{sub x}/Ge gate stacks, with changing the thickness of GeO{sub x}, in order to further clarify the position of slow traps. The time dependence of the current drift and the effective time constant of slow traps do not change among the MOSFETs with the different thickness GeO{sub x}, demonstrating that the slow traps mainly exist near the interfaces between Ge and GeO{sub x}.

Charge retention in scaled SONOS nonvolatile semiconductor memory devices—Modeling and characterization

Science.gov (United States)

Hu, Yin; White, Marvin H.

1993-10-01

A new analytical model is developed to investigate the influence of the charge loss processes in the retention mode of the SONOS NVSM device. The model considers charge loss by the following processes: (1) electron back-tunneling from the nitride traps to the Si conduction band, (2) electron back-tunneling from the nitride traps to the Si/SiO 2 interface traps and (3) hole injection from the Si valence band to the nitride traps. An amphoteric trap charge distribution is used in this model. The new charge retention model predicts that process (1) determines the short term retention, while processes (2) and (3) determine the long term retention. Good agreement has been reached between the results of analytical calculations and the experimental retention data on both surface channel and buried channel SONOS devices.

Evaluation of hydrogen trapping mechanisms during performance of different hydrogen fugacity in a lean duplex stainless steel

Energy Technology Data Exchange (ETDEWEB)

Silverstein, R., E-mail: barrav@post.bgu.ac.il [Department of Material Science and Engineering, Ben-Gurion University of the Negev, Beer-Sheva (Israel); Eliezer, D. [Department of Material Science and Engineering, Ben-Gurion University of the Negev, Beer-Sheva (Israel); Glam, B.; Eliezer, S.; Moreno, D. [Soreq Nuclear Research Center, Yavne, 81800 (Israel)

2015-11-05

Hydrogen trapping behavior in a lean duplex stainless steel (LDS) is studied by means of thermal desorption spectrometry (TDS). The susceptibility of a metal to hydrogen embrittlement is directly related to the trap characteristics: source or sink (reversible or irreversible, respectively). Since trapping affects the metal's diffusivity, it has a major influence on the hydrogen assisted cracking (HAC) phenomenon. It is known from previously published works that the susceptibility will depend on the competition between reversible and irreversible traps; meaning a direct relation to the hydrogen's initial state in the steel. In this research the trapping mechanism of LDS, exposed to different hydrogen charging environments, is analyzed by means of TDS. The TDS analysis was supported and confirmed by means of X-ray diffraction (XRD), hydrogen quantitative measurements and microstructural observations. It was found that gaseous charging (which produces lower hydrogen fugacity) creates ∼22% higher activation energy for hydrogen trapping compared with cathodic charging (which produces higher hydrogen fugacity). These results are due to the different effects on the hydrogen behavior in LDS which causes a major difference in the hydrogen contents and different hydrogen assisted phase transitions. The highest activation energy value in the cathodic charged sample was ascribed to the dominant phase transformation of γ → γ{sup ∗}, whereas in the gaseous charged sample it was ascribed to the dominant formation of intermetallic compound, sigma (σ). The relation between hydrogen distribution in LDS and hydrogen trapping mechanism is discussed in details. - Highlights: • The relation between hydrogen distribution and trapping in LDS is discussed. • Hydrogen's initial state in LDS causes different microstructural changes. • Gaseous charged LDS creates higher trapping energy compared to cathodic charged LDS. • The dominant phase transformation in

A New Method for Negative Bias Temperature Instability Assessment in P-Channel Metal Oxide Semiconductor Transistors

Science.gov (United States)

Djezzar, Boualem; Tahi, Hakim; Benabdelmoumene, Abdelmadjid; Chenouf, Amel; Kribes, Youcef

2012-11-01

In this paper, we present a new method, named on the fly oxide trap (OTFOT), to extract the bias temperature instability (BTI) in MOS transistors. The OTFOT method is based on charge pumping technique (CP) at low and high frequencies. We emphasize on the theoretical-based concept, giving a clear insight on the easy-use of the OTFOT methodology and demonstrating its viability to characterize the negative BTI (NBTI). Using alternatively high and low frequencies, OTFOT method separates the interface-traps (ΔNit) and border-trap (ΔNbt) (switching oxide-trap) densities independently and also their contributions to the threshold voltage shift (ΔVth), without needing additional methods. The experimental results, from two experimental scenarios, showing the extraction of NBTI-induced shifts caused by interface- and oxide-trap increases are also presented. In the first scenario, all stresses are performed on the same transistor. It exhibits an artifact value of exponent n. In the second scenario, each voltage stress is applied only on one transistor. Its results show an average n of 0.16, 0.05, and 0.11 for NBTI-induced ΔNit, ΔNbt, ΔVth, respectively. Therefore, OTFOT method can contribute to further understand the behavior of the NBTI degradation, especially through the threshold voltage shift components such as ΔVit and ΔVot caused by interface-trap and border-trap, respectively.

Adsorption of poly(ethylene oxide) on smectite: Effect of layer charge.

Science.gov (United States)

Su, Chia-Chi; Shen, Yun-Hwei

2009-04-01

The adsorption of polymers on clay is important in many applications. However the mechanisms of poly(ethylene oxide) (PEO) adsorption on smectite is not well elucidated at present. The aim of this study was to investigate the effect of layer charge density on the adsorption of PEO by smectite. The results indicated that both the hydrophobic interaction (between CH(2)CH(2) groups and siloxane surface) and the hydrogen bonding (between ether oxygen of PEO and structure OH of smectite) lead to PEO preferential adsorption on the surface of low-charge smectite. In addition, the delamination of low-charge smectite in water is enhanced upon PEO adsorption presumably due to the hydrophilic ether oxygen of adsorbed PEO.

Trap-induced charge transfer/transport at energy harvesting assembly

Science.gov (United States)

Cho, Seongeun; Paik, Hanjong; Kim, Tae Wan; Park, Byoungnam

2017-02-01

Understanding interfacial electronic properties between electron donors and acceptors in hybrid optoelectronic solar cells is crucial in governing the device parameters associated with energy harvesting. To probe the electronic localized states at an electron donor/acceptor interface comprising a representative hybrid solar cell, we investigated the electrical contact properties between Al-doped zinc oxide (AZO) and poly (3-hexylthiophene) (P3HT) using AZO as the source and drain electrodes, pumping carriers from AZO into P3HT. The injection efficiency was evaluated using the transmission line method (TLM) in combination with field effect transistor characterizations. Highly conductive AZO films worked as the source and drain electrodes in the devices for TLM and field effect measurements. A comparable contact resistance difference between AZO/P3HT/AZO and Au/P3HT/Au structures contradicts the fact that a far larger energy barrier exists for electrons and holes between AZO and P3HT compared with between P3HT and Au based on the Schottky-Mott model. It is suggested that band to band tunneling accounts for the contradiction through the initial hop from AZO to P3HT for hole injection. The involvement of the tunneling mechanism in determining the contact resistance implies that there is a high density of electronic traps in the organic side.

Influence of gamma-ray irradiation on 6H-SiC MOSFETs

International Nuclear Information System (INIS)

Ohshima, Takeshi; Yoshikawa, Masahito; Itoh, Hisayoshi; Nashiyama, Isamu; Okada, Sohei

1998-01-01

Enhancement-type n-channel MOSFETs were fabricated on 6H-SiC epitaxial films using pyrogenic or dry oxidation process. Oxide-trapped charges and interface traps produced in 6H-Sic MOSFETs by gamma-ray irradiation are evaluated from changes in the subthreshold-current curve. The net numbers of radiation-induced-oxide-trapped charges and interface traps depend on the oxidation process. The 6H-SiC MOSFETs exhibit higher radiation resistance than Si MOSFETs. (author)

Fabrication of solid-state secondary battery using semiconductors and evaluation of its charge/discharge characteristics

Science.gov (United States)

Sasaki, Atsuya; Sasaki, Akito; Hirabayashi, Hideaki; Saito, Shuichi; Aoki, Katsuaki; Kataoka, Yoshinori; Suzuki, Koji; Yabuhara, Hidehiko; Ito, Takahiro; Takagi, Shigeyuki

2018-04-01

Li-ion batteries have attracted interest for use as storage batteries. However, the risk of fire has not yet been resolved. Although solid Li-ion batteries are possible alternatives, their performance characteristics are unsatisfactory. Recently, research on utilizing the accumulation of carriers at the trap levels of semiconductors has been performed. However, the detailed charge/discharge characteristics and principles have not been reported. In this report, we attempted to form new n-type oxide semiconductor/insulator/p-type oxide semiconductor structures. The battery characteristics of these structures were evaluated by charge/discharge measurements. The obtained results clearly indicated the characteristics of rechargeable batteries. Furthermore, the fabricated structure accumulated an approximately 5000 times larger number of carriers than a parallel plate capacitor. Additionally, by constructing circuit models based on the experimental results, the charge/discharge mechanisms were considered. This is the first detailed experimental report on a rechargeable battery that operates without the double injection of ions and electrons.

Charged vortices in high-Tc superconductors

International Nuclear Information System (INIS)

Matsuda, Y.; Kumagai, K.

2002-01-01

It is well known that a vortex in type II superconductors traps a magnetic flux. Recently the possibility that a vortex can accumulate a finite electric charge as well has come to be realized. The sign and magnitude of the vortex charge not only is closely related to the microscopic electronic structure of the vortex, but also strongly affects the dynamical properties of the vortex. In this chapter we demonstrate that a vortex in high-T c superconductors (HTSC) indeed traps a finite electronic charge, using the high resolution measurements of the nuclear quadrupole frequencies. We then discuss the vortex Hall anomaly whose relation with the vortex charging effect has recently received considerable attention. We show that the sign of the trapped charge is opposite to the sign predicted by the conventional BCS theory and deviation of the magnitude of the charge from the theory is also significant. We also show that the electronic structure of underlying system is responsible for the Hall sign in the vortex state and again the Hall sign is opposite to the sign predicted by the BCS theory. It appears that these unexpected features observed in both electrostatics and dynamics of the vortex may be attributed to the novel electronic structure of the vortex in HTSC. (orig.)

Conditions for minimization of halo particle production during transverse compression of intense ion charge bunches in the Paul Trap Simulator Experiment (PTSX)

International Nuclear Information System (INIS)

Gilson, Erik P.; Chung, Moses; Davidson, Ronald C.; Dorf, Mikhail; Efthimion, Philip C.; Grote, David P.; Majeski, Richard; Startsev, Edward A.

2007-01-01

The Paul Trap Simulator Experiment (PTSX) is a compact laboratory Paul trap that simulates propagation of a long, thin charged-particle bunch coasting through a multi-kilometer-long magnetic alternating-gradient (AG) transport system by putting the physicist in the frame-of-reference of the beam. The transverse dynamics of particles in both systems are described by the same sets of equations-including all nonlinear space-charge effects. The time-dependent quadrupolar voltages applied to the PTSX confinement electrodes correspond to the axially dependent magnetic fields applied in the AG system. This paper presents the results of experiments in which the amplitude of the applied confining voltage is changed over the course of the experiment in order to transversely compress a beam with an initial depressed tune ν/ν 0 ∼0.9. Both instantaneous and smooth changes are considered. Particular emphasis is placed on determining the conditions that minimize the emittance growth and, generally, the number of particles that are found at large radius (so-called halo particles) after the beam compression. The experimental data are also compared with the results of particle-in-cell (PIC) simulations performed with the WARP code

Effect of oxide insertion layer on resistance switching properties of copper phthalocyanine

Science.gov (United States)

Joshi, Nikhil G.; Pandya, Nirav C.; Joshi, U. S.

2013-02-01

Organic memory device showing resistance switching properties is a next-generation of the electrical memory unit. We have investigated the bistable resistance switching in current-voltage (I-V) characteristics of organic diode based on copper phthalocyanine (CuPc) film sandwiched between aluminum (Al) electrodes. Pronounced hysteresis in the I-V curves revealed a resistance switching with on-off ratio of the order of 85%. In order to control the charge injection in the CuPc, nanoscale indium oxide buffer layer was inserted to form Al/CuPc/In2O3/Al device. Analysis of I-V measurements revealed space charge limited switching conduction at the Al/CuPc interface. The traps in the organic layer and charge blocking by oxide insertion layer have been used to explain the absence of resistance switching in the oxide buffer layered memory device cell. Present study offer potential applications for CuPc organic semiconductor in low power non volatile resistive switching memory and logic circuits.

Oxidation and metal-insertion in molybdenite surfaces: evaluation of charge-transfer mechanisms and dynamics

Directory of Open Access Journals (Sweden)

Shutthanandan V

2008-06-01

Full Text Available Abstract Molybdenum disulfide (MoS2, a layered transition-metal dichalcogenide, has been of special importance to the research community of geochemistry, materials and environmental chemistry, and geotechnical engineering. Understanding the oxidation behavior and charge-transfer mechanisms in MoS2 is important to gain better insight into the degradation of this mineral in the environment. In addition, understanding the insertion of metals into molybdenite and evaluation of charge-transfer mechanism and dynamics is important to utilize these minerals in technological applications. Furthermore, a detailed investigation of thermal oxidation behavior and metal-insertion will provide a basis to further explore and model the mechanism of adsorption of metal ions onto geomedia. The present work was performed to understand thermal oxidation and metal-insertion processes of molybdenite surfaces. The analysis was performed using atomic force microscopy (AFM, scanning electron microscopy (SEM, transmission electron microscopy (TEM, Rutherford backscattering spectrometry (RBS, and nuclear reaction analysis (NRA. Structural studies using SEM and TEM indicate the local-disordering of the structure as a result of charge-transfer process between the inserted lithium and the molybdenite layer. Selected area electron diffraction measurements indicate the large variations in the diffusivity of lithium confirming that the charge-transfer is different along and perpendicular to the layers in molybdenite. Thermal heating of molybenite surface in air at 400°C induces surface oxidation, which is slow during the first hour of heating and then increases significantly. The SEM results indicate that the crystals formed on the molybdenite surface as a result of thermal oxidation exhibit regular thin-elongated shape. The average size and density of the crystals on the surface is dependent on the time of annealing; smaller size and high density during the first one-hour and

Oxidation and metal-insertion in molybdenite surfaces: evaluation of charge-transfer mechanisms and dynamics.

Science.gov (United States)

Ramana, C V; Becker, U; Shutthanandan, V; Julien, C M

2008-06-05

Molybdenum disulfide (MoS2), a layered transition-metal dichalcogenide, has been of special importance to the research community of geochemistry, materials and environmental chemistry, and geotechnical engineering. Understanding the oxidation behavior and charge-transfer mechanisms in MoS2 is important to gain better insight into the degradation of this mineral in the environment. In addition, understanding the insertion of metals into molybdenite and evaluation of charge-transfer mechanism and dynamics is important to utilize these minerals in technological applications. Furthermore, a detailed investigation of thermal oxidation behavior and metal-insertion will provide a basis to further explore and model the mechanism of adsorption of metal ions onto geomedia.The present work was performed to understand thermal oxidation and metal-insertion processes of molybdenite surfaces. The analysis was performed using atomic force microscopy (AFM), scanning electron microscopy (SEM), transmission electron microscopy (TEM), Rutherford backscattering spectrometry (RBS), and nuclear reaction analysis (NRA).Structural studies using SEM and TEM indicate the local-disordering of the structure as a result of charge-transfer process between the inserted lithium and the molybdenite layer. Selected area electron diffraction measurements indicate the large variations in the diffusivity of lithium confirming that the charge-transfer is different along and perpendicular to the layers in molybdenite. Thermal heating of molybenite surface in air at 400 degrees C induces surface oxidation, which is slow during the first hour of heating and then increases significantly. The SEM results indicate that the crystals formed on the molybdenite surface as a result of thermal oxidation exhibit regular thin-elongated shape. The average size and density of the crystals on the surface is dependent on the time of annealing; smaller size and high density during the first one-hour and significant

Low voltage stress-induced leakage current and traps in ultrathin oxide (1.2 2.5 nm) after constant voltage stresses

Science.gov (United States)

Petit, C.; Zander, D.

2007-10-01

It has been shown that the low voltage gate current in ultrathin oxide metal-oxide-semiconductor devices is very sensitive to electrical stresses. Therefore, it can be used as a reliability monitor when the oxide thickness becomes too small for traditional electrical measurements to be used. In this work, we present a study on n-MOSCAP devices at negative gate bias in the direct tunneling (DT) regime. If the low voltage stress-induced leakage current (LVSILC) depends strongly on the low sense voltages, it also depends strongly on the stress voltage magnitude. We show that two LVSILC peaks appear as a function of the sense voltage in the LVSILC region and that their magnitude, one compared to the other, depends strongly on the stress voltage magnitude. One is larger than the other at low stress voltage and smaller at high stress voltage. From our experimental results, different conduction mechanisms are analyzed. To explain LVSILC variations, we propose a model of the conduction through the ultrathin gate oxide based on two distinctly different trap-assisted tunneling mechanisms: inelastic of gate electron (INE) and trap-assisted electron (ETAT).

Subthreshold slope as a measure of interfacial trap density in pentacene films

International Nuclear Information System (INIS)

Kwon, Yongwoo; Park, Byoungnam

2016-01-01

Electrical properties in organic field effect transistors (FETs) are dominated by charge transport in the accumulation layer, few molecular layers close to the gate dielectric. Through comparison of the subthreshold slope between monolayer (ML) and thick pentacene FETs, formation of the second layer islands on top of the complete first layer is found to be crucial in determining the charge transport in ML pentacene FETs. It is demonstrated that a pentacene ML field effect transistor (FET) is an excellent probe that can detect electronic states of organic semiconductors interfacing with the gate dielectric at nanometer scale. Far higher sub-threshold slope in ML FETs, as a measure of interfacial charge trap density, than that in thick pentacene FETs is translated that the path of the induced carriers in ML FETs is limited into the molecular layer interfacing with the gate dielectric with a high density of charge traps, while carriers in thicker films have alternative pathways through more electrically conductive layer above the first layer with much less trap density. - Highlights: • Sub-threshold slope is demonstrated to be a measure of interface traps. • For application to sensors, effective charge transport layer should be chosen. • Monolayer transistors can be used as a platform for probing localized states.

Subthreshold slope as a measure of interfacial trap density in pentacene films

Energy Technology Data Exchange (ETDEWEB)

Kwon, Yongwoo; Park, Byoungnam, E-mail: metalpbn@hongik.ac.kr

2016-01-29

Electrical properties in organic field effect transistors (FETs) are dominated by charge transport in the accumulation layer, few molecular layers close to the gate dielectric. Through comparison of the subthreshold slope between monolayer (ML) and thick pentacene FETs, formation of the second layer islands on top of the complete first layer is found to be crucial in determining the charge transport in ML pentacene FETs. It is demonstrated that a pentacene ML field effect transistor (FET) is an excellent probe that can detect electronic states of organic semiconductors interfacing with the gate dielectric at nanometer scale. Far higher sub-threshold slope in ML FETs, as a measure of interfacial charge trap density, than that in thick pentacene FETs is translated that the path of the induced carriers in ML FETs is limited into the molecular layer interfacing with the gate dielectric with a high density of charge traps, while carriers in thicker films have alternative pathways through more electrically conductive layer above the first layer with much less trap density. - Highlights: • Sub-threshold slope is demonstrated to be a measure of interface traps. • For application to sensors, effective charge transport layer should be chosen. • Monolayer transistors can be used as a platform for probing localized states.

Near interface traps in SiO{sub 2}/4H-SiC metal-oxide-semiconductor field effect transistors monitored by temperature dependent gate current transient measurements

Energy Technology Data Exchange (ETDEWEB)

Fiorenza, Patrick; La Magna, Antonino; Vivona, Marilena; Roccaforte, Fabrizio [Consiglio Nazionale delle Ricerche-Istituto per la Microelettronica e Microsistemi (CNR-IMM), Strada VIII 5, Zona Industriale 95121 Catania (Italy)

2016-07-04

This letter reports on the impact of gate oxide trapping states on the conduction mechanisms in SiO{sub 2}/4H-SiC metal-oxide-semiconductor field effect transistors (MOSFETs). The phenomena were studied by gate current transient measurements, performed on n-channel MOSFETs operated in “gate-controlled-diode” configuration. The measurements revealed an anomalous non-steady conduction under negative bias (V{sub G} > |20 V|) through the SiO{sub 2}/4H-SiC interface. The phenomenon was explained by the coexistence of a electron variable range hopping and a hole Fowler-Nordheim (FN) tunnelling. A semi-empirical modified FN model with a time-depended electric field is used to estimate the near interface traps in the gate oxide (N{sub trap} ∼ 2 × 10{sup 11} cm{sup −2}).

Simulation of electron transmittance and tunnel current in n{sup +} Poly-Si/HfSiO{sub x}N/Trap/SiO{sub 2}/Si(100) capacitors using analytical and numerical approaches

Energy Technology Data Exchange (ETDEWEB)

Noor, Fatimah A., E-mail: fatimah@fi.itb.ac.id; Iskandar, Ferry; Abdullah, Mikrajuddin; Khairurrijal [Physics of Electronic Materials Research Division Faculty of Mathematics and Natural Sciences, Institut Teknologi Bandung Jalan Ganesa 10, Bandung 40132 (Indonesia)

2015-04-16

In this paper, we discuss the electron transmittance and tunneling current in high-k-based-MOS capacitors with trapping charge by including the off-diagonal effective-mass tensor elements and the effect of coupling between transverse and longitudinal energies represented by an electron velocity in the gate. The HfSiO{sub x}N/SiO{sub 2} dual ultrathin layer is used as the gate oxide in an n{sup +} poly- Si/oxide/Si capacitor to replace SiO{sub 2}. The main problem of using HfSiO{sub x}N is the charge trapping formed at the HfSiO{sub x}N/SiO{sub 2} interface that can influence the performance of the device. Therefore, it is important to develop a model taking into account the presence of electron traps at the HfSiO{sub x}N/SiO{sub 2} interface in the electron transmittance and tunneling current. The transmittance and tunneling current in n{sup +} poly- Si/HfSiO{sub x}N/trap/SiO2/Si(100) capacitors are calculated by using Airy wavefunctions and a transfer matrix method (TMM) as analytical and numerical approaches, respectively. The transmittance and tunneling current obtained from the Airy wavefunction are compared to those computed by the TMM. The effects of the electron velocity on the transmittance and tunneling current are also discussed.

Evaluation of the density of the charge trapped in organic ferroelectric capacitors based on the Mott-Schottky model

Energy Technology Data Exchange (ETDEWEB)

Kim, Won-Ho [Samsung Display Co. Ltd., Yongin (Korea, Republic of); Kwon, Jin-Hyuk; Park, Gyeong-Tae; Kim, Jae-Hyun; Bae, Jin-Hyuk [Kyungpook National University, Daegu (Korea, Republic of); Zhang, Xue; Park, Jae-Hoon [Hallym University, Chuncheon (Korea, Republic of)

2014-09-15

Organic ferroelectric capacitors were fabricated using pentacene and poly (vinylidene fluoride trifluoroethylene) (PVDF-TrFE) as an organic semiconductor and a ferroelectric material, respectively. A paraelectric poly(vinyl cinnamate) layer was adopted as an interlayer between the PVDFTrFE layer and the bottom electrode. The paraelectric interlayer induced a depolarization field opposite to the direction of the polarization formed in the ferroelectric PVDF-TrFE insulator, thereby suppressing spontaneous polarization. As a result, the Mott-Schottky model could be used to evaluate, from the extracted flat-band voltages, the density of the charge trapped in the organic ferroelectric capacitors.

Thickness dependent charge transport in ferroelectric BaTiO3 heterojunctions

Science.gov (United States)

Singh, Pooja; Rout, P. K.; Singh, Manju; Rakshit, R. K.; Dogra, Anjana

2015-09-01

We have investigated the effect of ferroelectric barium titanate (BaTiO3) film thickness on the charge transport mechanism in pulsed laser deposited epitaxial metal-ferroelectric semiconductor junctions. The current (I)-voltage (V) measurements across the junctions comprising of 20-500 nm thick BaTiO3 and conducting bottom electrode (Nb: SrTiO3 substrate or La2/3Ca1/3MnO3 buffer layer) demonstrate the space charge limited conduction. Further analysis indicates a reduction in the ratio of free to trapped carriers with increasing thickness in spite of decreasing trap density. Such behaviour arises the deepening of the shallow trap levels (I-V curves implies a bipolar resistive switching behaviour, which can be explained in terms of charge trapping and de-trapping process.

Trapping of oxidized LDL in lysosomes of Kupffer cells is a trigger for hepatic inflammation.

Science.gov (United States)

Bieghs, Veerle; Walenbergh, Sofie M A; Hendrikx, Tim; van Gorp, Patrick J; Verheyen, Fons; Olde Damink, Steven W; Masclee, Ad A; Koek, Ger H; Hofker, Marten H; Binder, Christoph J; Shiri-Sverdlov, Ronit

2013-08-01

Non-alcoholic steatohepatitis (NASH) is characterized by steatosis and inflammation. The transition from steatosis towards NASH represents a key step in pathogenesis, as it will set the stage for further severe liver damage. Under normal conditions, lipoproteins that are endocytosed by Kupffer cells (KCs) are easily transferred from the lysosomes into the cytoplasm. Oxidized LDL (oxLDL) that is taken up by the macrophages in vitro is trapped within the lysosomes, while acetylated LDL (acLDL) is leading to normal lysosomal hydrolysis, resulting in cytoplasmic storage. We have recently demonstrated that hepatic inflammation is correlated with lysosomal trapping of lipids. So far, a link between lysosomal trapping of oxLDL and inflammation was not established. We hypothesized that lysosomal trapping of oxLDL in KCs will lead to hepatic inflammation. Ldlr(-/-) mice were injected with LDL, acLDL and oxLDL and sacrificed after 2, 6 and 24 h. Electron microscopy of KCs demonstrated that after oxLDL injection, small lipid inclusions were present inside the lysosomes after all time points and were mostly pronounced after 6 and 24 h. In contrast, no lipid inclusions were present inside KCs after LDL or acLDL injection. Hepatic expression of several inflammatory genes and scavenger receptors was higher after oxLDL injections compared with LDL or acLDL. These data suggest that trapping of oxLDL inside lysosomes of KCs in vivo is causally linked to increased hepatic inflammatory gene expression. Our novel observations provide new bases for prevention and treatment of NASH. © 2013 John Wiley & Sons A/S. Published by John Wiley & Sons Ltd.

Experiments with highly charged ions up to bare U92+ on the electron beam ion trap

International Nuclear Information System (INIS)

Beiersdorfer, P.

1994-07-01

An overview is given of the current experimental effort to investigate the level structure of highly charged ions with the Livermore electron beam ion trap (EBIT) facility. The facility allows the production and study of virtually any ionization state of any element up to bare U 92+ . Precision spectroscopic measurements have been performed for a range of Δn = 0 and Δn = 1 transitions. Examples involving 3-4 and 2-3 as well as 3-3 and 2-2 transitions in uranium ions are discussed that illustrated some of the measurement and analysis techniques employed. The measurements have allowed tests of calculations of the the quantum electrodynamical contributions to the transitions energies at the 0.4% level in a regime where (Zα) ∼ 1

Development of in-situ trap characterisation techniques for EMCCDs

Science.gov (United States)

Bush, N.; Hall, D.; Holland, A.; Burgon, R.; Jordan, D.; Morrissey, P.; Demers, R.; Harding, L. K.; Nemati, B.; Effinger, R.; Bottom, M.

2018-02-01

The "trap pumping" technique has seen considerable use over recent years as a means to probe the intrinsic properties of silicon defects that can impact charge transfer performance within CCD-based technologies. While the theory behind the technique is reasonably well understood, it has to date only been applied to relatively simple pixel designs where the motion of charge between pixel phases is fairly easy to predict. For some devices, the intrinsic pixel architecture is more complex and can consist of unequal phase sizes and additional implants that deform the electronic potential. Here, we present the implementation of the trap pumping technique for the CCD201-20, a 2-phase Teledyne e2v EMCCD. Clocking schemes are presented that can provide the location of silicon defects to sub-micron resolution. Experimental techniques that allow determination of trap energy levels and emission cross sections are presented. These are then implemented on an irradiated CCD201-20 to determine the energy level and emission cross section for defects thought to be the double acceptor state of the silicon divacancy (VV--) and carbon-phosphorus (CiPs) pairs. An improvement in charge transfer performance through optimised parallel clock delay is demonstrated and found to correlate with the properties of defects found using the trap pumping technique.

Immunotoxicity of zinc oxide nanoparticles with different size and electrostatic charge.

Science.gov (United States)

Kim, Cheol-Su; Nguyen, Hai-Duong; Ignacio, Rosa Mistica; Kim, Jae-Hyun; Cho, Hyeon-Cheol; Maeng, Eun Ho; Kim, Yu-Ri; Kim, Meyoung-Kon; Park, Bae-Keun; Kim, Soo-Ki

2014-01-01

While zinc oxide (ZnO) nanoparticles (NPs) have been recognized to have promising applications in biomedicine, their immunotoxicity has been inconsistent and even contradictory. To address this issue, we investigated whether ZnO NPs with different size (20 or 100 nm) and electrostatic charge (positive or negative) would cause immunotoxicity in vitro and in vivo, and explored their underlying molecular mechanism. Using Raw 264.7 cell line, we examined the immunotoxicity mechanism of ZnO NPs as cell viability. We found that in a cell viability assay, ZnO NPs with different size and charge could induce differential cytotoxicity to Raw 264.7 cells. Specifically, the positively charged ZnO NPs exerted higher cytotoxicity than the negatively charged ones. Next, to gauge systemic immunotoxicity, we assessed immune responses of C57BL/6 mice after oral administration of 750 mg/kg/day dose of ZnO NPs for 2 weeks. In parallel, ZnO NPs did not alter the cell-mediated immune response in mice but suppressed innate immunity such as natural killer cell activity. The CD4(+)/CD8(+) ratio, a marker for matured T-cells was slightly reduced, which implies the alteration of immune status induced by ZnO NPs. Accordingly, nitric oxide production from splenocyte culture supernatant in ZnO NP-fed mice was lower than control. Consistently, serum levels of pro/anti-inflammatory (interleukin [IL]-1β, tumor necrosis factor-α, and IL-10) and T helper-1 cytokines (interferon-γ and IL-12p70) in ZnO NP-fed mice were significantly suppressed. Collectively, our results indicate that different sized and charged ZnO NPs would cause in vitro and in vivo immunotoxicity, of which nature is an immunosuppression.

Charge distribution on plutonium-containing aerosols produced in mixed-oxide reactor fuel fabrication and the laboratory

International Nuclear Information System (INIS)

Yeh, H.C.; Newton, G.J.; Teague, S.V.

1976-01-01

The inhalation toxicity of potentially toxic aerosols may be affected by the electrostatic charge on the particles. Charge may influence the deposition site during inhalation and therefore its subsequent clearance and dose patterns. The electrostatic charge distributions on plutonium-containing aerosols were measured with a miniature, parallel plate, aerosol electrical mobility spectrometer. Two aerosols were studied: a laboratory-produced 238 PuO 2 aerosol (15.8 Ci/g) and a plutonium mixed-oxide aerosol (PU-MOX, natural UO 2 plus PuO 2 , 0.02 Ci/g) formed during industrial centerless grinding of mixed-oxide reactor fuel pellets. Plutonium-238 dioxide particles produced in the laboratory exhibited a small net positive charge within a few minutes after passing through a 85 Kr discharger due to alpha particle emission removal of valence electrons. PU-MOX aerosols produced during centerless grinding showed a charge distribution essentially in Boltzmann equilibrium. The gross alpha aerosol concentrations (960-1200 nCi/l) within the glove box were sufficient to provide high ion concentrations capable of discharging the charge induced by mechanical and/or nuclear decay processes

Mats and LaSpec: High-precision experiments using ion traps and lasers at Fair

Energy Technology Data Exchange (ETDEWEB)

Rodriguez, D.; Lallena, A.M.; Blaum, K.; Bohm, C.; Cakirli, R.B.; Crespo Lopez-Urrutia, J.R.; Eliseev, S.; Ketelaer, J.; Kreim, M.S.; Kowalska, M.; Litvinov, Y.A.; Nagy, S.; Neidherr, D.; Repp, J.; Roux, C.; Schabinger, B.; Ullrich, J.; Nortershauser, W.; Eberhardt, K.; Geppert, C.; Kramer, J.; Krieger, A.; Sanchez, R.; Ahammed, M.; Das, P.; Ray, A.; Algora, A.; Rubio, B.; Tain, J.L.; Audi, G.; Lunney, D.; Naimi, S.; Aysto, J.; Jokinen, A.; Kolhinen, V.; Moore, I.; Beck, D.; Block, M.; Geissel, H.; Heinz, S.; Herfurth, F.; Litvinov, Y.A.; Minaya-Ramirez, E.; Plab, W.R.; Quint, W.; Scheidenberger, C.; Winkler, M.; Bender, M.; Billowes, J.; Campbell, P.; Flanagan, K.T.; Schwarz, S.; Bollen, G.; Ferrer, R.; George, S.; Kester, O.; Brodeur, M.; Brunner, T.; Delheij, P.; Dilling, J.; Ettenauer, S.; Lapierre, A.; Bushaw, B.A.; Cano-Ott, D.; Martinez, T.; Cortes, G.; Gomez-Hornillos, M.B.; Dax, A.; Herlert, A.; Yordanov, D.; De, A.; Dickel, T.; Geissel, H.; Jesch, C.; Kuhl, T.; Petrick, M.; PlaB, W.R.; Scheidenberger, C.; Garcia-Ramos, J.E.; Gartzke, E.; Habs, D.; Szerypo, J.; Thirolf, P.G.; Weber, C.; Gusev, Y.; Nesterenko, D.; Novikov, Y.N.; Popov, A.; Seliverstov, M.; Vasiliev, A.; Vorobjev, G.; Heenen, P.H.; Marx, G.; Schweikhard, L.; Ziegler, F.; Hobein, M.; Schuch, R.; Solders, A.; Suhonen, M.; Huber, G.; Wendt, K.; Huyse, M.; Koudriavtsev, I.; Neyens, G.; Van Duppen, P.; Le Blanc, F.; Matos, M.; Reinhard, P.G.; Schneider, D.

2010-05-15

Nuclear ground state properties including mass, charge radii, spins and moments can be determined by applying atomic physics techniques such as Penning-trap based mass spectrometry and laser spectroscopy. The MATS and LaSpec setups at the low-energy beamline at FAIR will allow us to extend the knowledge of these properties further into the region far from stability. With MATS (Precision Measurements of very short-lived nuclei using an Advanced Trapping System for highly-charged ions) at FAIR we aim to apply several techniques to very short-lived radionuclides: High-accuracy mass measurements, in-trap conversion electron and alpha spectroscopy, and trap-assisted spectroscopy. The experimental setup of MATS is a unique combination of an electron beam ion trap for charge breeding, ion traps for beam preparation, and a high-precision Penning trap system for mass measurements and decay studies. For the mass measurements, MATS offers both a high accuracy and a high sensitivity. A relative mass uncertainty of 10{sup -9} can be reached by employing highly-charged ions and a non-destructive Fourier-Transform Ion-Cyclotron-Resonance (FT-ICR) detection technique on single stored ions. Decay studies in ion traps will become possible with MATS. Laser spectroscopy of radioactive isotopes and isomers is an efficient and model-independent approach for the determination of nuclear ground and isomeric state properties. Hyperfine structures and isotope shifts in electronic transitions exhibit readily accessible information on the nuclear spin, magnetic dipole and electric quadrupole moments as well as root-mean-square charge radii. The accuracy of laser-spectroscopic-determined nuclear properties is very high while requirements concerning production rates are moderate. This Technical Design Report describes a new Penning trap mass spectrometry setup as well as a number of complementary experimental devices for laser spectroscopy. Since MATS and LaSpec require high-quality low

Mats and LaSpec: High-precision experiments using ion traps and lasers at Fair

International Nuclear Information System (INIS)

Rodriguez, D.; Lallena, A.M.; Blaum, K.; Bohm, C.; Cakirli, R.B.; Crespo Lopez-Urrutia, J.R.; Eliseev, S.; Ketelaer, J.; Kreim, M.S.; Kowalska, M.; Litvinov, Y.A.; Nagy, S.; Neidherr, D.; Repp, J.; Roux, C.; Schabinger, B.; Ullrich, J.; Nortershauser, W.; Eberhardt, K.; Geppert, C.; Kramer, J.; Krieger, A.; Sanchez, R.; Ahammed, M.; Das, P.; Ray, A.; Algora, A.; Rubio, B.; Tain, J.L.; Audi, G.; Lunney, D.; Naimi, S.; Aysto, J.; Jokinen, A.; Kolhinen, V.; Moore, I.; Beck, D.; Block, M.; Geissel, H.; Heinz, S.; Herfurth, F.; Litvinov, Y.A.; Minaya-Ramirez, E.; Plab, W.R.; Quint, W.; Scheidenberger, C.; Winkler, M.; Bender, M.; Billowes, J.; Campbell, P.; Flanagan, K.T.; Schwarz, S.; Bollen, G.; Ferrer, R.; George, S.; Kester, O.; Brodeur, M.; Brunner, T.; Delheij, P.; Dilling, J.; Ettenauer, S.; Lapierre, A.; Bushaw, B.A.; Cano-Ott, D.; Martinez, T.; Cortes, G.; Gomez-Hornillos, M.B.; Dax, A.; Herlert, A.; Yordanov, D.; De, A.; Dickel, T.; Geissel, H.; Jesch, C.; Kuhl, T.; Petrick, M.; PlaB, W.R.; Scheidenberger, C.; Garcia-Ramos, J.E.; Gartzke, E.; Habs, D.; Szerypo, J.; Thirolf, P.G.; Weber, C.; Gusev, Y.; Nesterenko, D.; Novikov, Y.N.; Popov, A.; Seliverstov, M.; Vasiliev, A.; Vorobjev, G.; Heenen, P.H.; Marx, G.; Schweikhard, L.; Ziegler, F.; Hobein, M.; Schuch, R.; Solders, A.; Suhonen, M.; Huber, G.; Wendt, K.; Huyse, M.; Koudriavtsev, I.; Neyens, G.; Van Duppen, P.; Le Blanc, F.; Matos, M.; Reinhard, P.G.; Schneider, D.

2010-01-01

Nuclear ground state properties including mass, charge radii, spins and moments can be determined by applying atomic physics techniques such as Penning-trap based mass spectrometry and laser spectroscopy. The MATS and LaSpec setups at the low-energy beamline at FAIR will allow us to extend the knowledge of these properties further into the region far from stability. With MATS (Precision Measurements of very short-lived nuclei using an Advanced Trapping System for highly-charged ions) at FAIR we aim to apply several techniques to very short-lived radionuclides: High-accuracy mass measurements, in-trap conversion electron and alpha spectroscopy, and trap-assisted spectroscopy. The experimental setup of MATS is a unique combination of an electron beam ion trap for charge breeding, ion traps for beam preparation, and a high-precision Penning trap system for mass measurements and decay studies. For the mass measurements, MATS offers both a high accuracy and a high sensitivity. A relative mass uncertainty of 10 -9 can be reached by employing highly-charged ions and a non-destructive Fourier-Transform Ion-Cyclotron-Resonance (FT-ICR) detection technique on single stored ions. Decay studies in ion traps will become possible with MATS. Laser spectroscopy of radioactive isotopes and isomers is an efficient and model-independent approach for the determination of nuclear ground and isomeric state properties. Hyperfine structures and isotope shifts in electronic transitions exhibit readily accessible information on the nuclear spin, magnetic dipole and electric quadrupole moments as well as root-mean-square charge radii. The accuracy of laser-spectroscopic-determined nuclear properties is very high while requirements concerning production rates are moderate. This Technical Design Report describes a new Penning trap mass spectrometry setup as well as a number of complementary experimental devices for laser spectroscopy. Since MATS and LaSpec require high-quality low-energy beams

Charge disproportionation in Fe/sup 4 + -/oxides with perovskite-type structures

Energy Technology Data Exchange (ETDEWEB)

Takano, M; Nakanishi, N [Konan Univ., Kobe (Japan). Faculty of Science; Takeda, Y; Naka, S [Nagoya Univ. (Japan)

1979-01-01

For a further examination and elaboration of our simple charge disproportionation model for Fe/sup 4 +/-oxides, 2Fe/sup 4 +/..-->..Fe/sup 3 +/ + Fe/sup 5 +/, two series of solid solutions Casub(1-x)Srsub(x)FeO/sub 3/ and Srsub(1-x)Lasub(x)FeO/sub 3/ with the perovskite structure have been studied. The Moessbauer spectrum of Srsub(0,5)Lasub(0.5)FeO/sub 3/ at 4 K clearly indicates the disproportionation. For both series of oxides, the disproportionation seems to set in at the Tsub(N).

Proximity effect in normal-superconductor hybrids for quasiparticle traps

Energy Technology Data Exchange (ETDEWEB)

Hosseinkhani, Amin [Peter Grunberg Institute (PGI-2), Forschungszentrum Julich, D-52425 Julich (Germany); JARA-Institute for Quantum Information, RWTH Aachen University, D-52056 Aachen (Germany)

2016-07-01

Coherent transport of charges in the form of Cooper pairs is the main feature of Josephson junctions which plays a central role in superconducting qubits. However, the presence of quasiparticles in superconducting devices may lead to incoherent charge transfer and limit the coherence time of superconducting qubits. A way around this so-called ''quasiparticle poisoning'' might be using a normal-metal island to trap quasiparticles; this has motivated us to revisit the proximity effect in normal-superconductor hybrids. Using the semiclassical Usadel equations, we study the density of states (DoS) both within and away from the trap. We find that in the superconducting layer the DoS quickly approaches the BCS form; this indicates that normal-metal traps should be effective at localizing quasiparticles.

Measurement and simulation of the pressure ratio between the two traps of double Penning trap mass spectrometers

International Nuclear Information System (INIS)

Neidherr, D.; Blaum, K.; Block, M.; Ferrer, R.; Herfurth, F.; Ketelaer, J.; Nagy, Sz.; Weber, C.

2008-01-01

Penning traps are ideal tools to perform high-precision mass measurements. For this purpose the cyclotron frequency of the stored charged particles is measured. In case of on-line mass measurements of short-lived nuclides produced at radioactive beam facilities the ions get in general first prepared and cooled by buffer-gas collisions in a preparation trap to reduce their motional amplitudes and are then transported to a precision trap for the cyclotron frequency determination. In modern Penning trap mass spectrometers both traps are placed in the homogeneous region of one superconducting magnet to optimize the transport efficiency. Because the gas pressure inside the precision trap has to be very low in order to minimize the damping of the ion motion caused by collisions with rest gas molecules during the frequency determination, a pumping barrier is installed between both traps. To predict the pressure difference between the two traps in the region of molecular gas flow the motion of each particle can be simulated without consideration of the other particles. Thus, it is possible to calculate the transit probability through a tube of a given geometry. The results are compared with experimentally obtained pressure differences.

Inverse spinel transition metal oxides for lithium-ion storage with different discharge/charge conversion mechanisms

International Nuclear Information System (INIS)

Wang, Jiawei; Ren, Yurong; Huang, Xiaobing; Ding, Jianning

2016-01-01

Highlights: • Inverse spinel structure relieves the irreversible phase transition of electrodes. • Anodes with the same structure show different discharge/charge conversion mechanisms. • High reversible capacity confirms the potential feasibility of composites. - Abstract: Inverse spinel transition metal oxides (Fe 3 O 4 , MnFe 2 O 4 , Fe 3 O 4 /reduced graphene oxide and MnFe 2 O 4 /reduced graphene oxide) are prepared by a facile ethylene-glycol-assisted hydrothermal method. The stability of inverse spinel structure and the high specific surface area of nanoscale provide transition metal oxides with high specific capacity. And the surface modification with reduced graphene oxide improves the poor conductivity of pristine transition metal oxides. Pristine Fe 3 O 4 and MnFe 2 O 4 deliver the high initial discharge capacity of 1137.1 and 1088.9 mAh g −1 , respectively. Fe 3 O 4 /reduced graphene oxide and MnFe 2 O 4 /reduced graphene oxide get the reversible capacity of 645.8 and 720 mAh g −1 , respectively, even after 55 cycles. The different discharge/charge conversion mechanisms make them different capacity stability. The great electrochemical performances of composites offer electrodes with suitable characteristics for high-performance energy storage application.

Electron Cooling of Protons in a Nested Penning Trap

International Nuclear Information System (INIS)

Hall, D.S.; Gabrielse, G.

1996-01-01

Trapped protons cool via collisions with trapped electrons at 4 K.This first demonstration of sympathetic cooling by trapped species of opposite sign of charge utilizes a nested Penning trap. The demonstrated interaction of electrons and protons at very low relative velocities, where recombination is predicted to be most rapid, indicates that this may be a route towards the study of low temperature recombination. The production of cold antihydrogen is of particular interest, and electron cooling of highly stripped ions may also be possible. copyright 1996 The American Physical Society

Spin trapping combined with quantitative mass spectrometry defines free radical redistribution within the oxidized hemoglobin:haptoglobin complex.

Science.gov (United States)

Vallelian, Florence; Garcia-Rubio, Ines; Puglia, Michele; Kahraman, Abdullah; Deuel, Jeremy W; Engelsberger, Wolfgang R; Mason, Ronald P; Buehler, Paul W; Schaer, Dominik J

2015-08-01

Extracellular or free hemoglobin (Hb) accumulates during hemolysis, tissue damage, and inflammation. Heme-triggered oxidative reactions can lead to diverse structural modifications of lipids and proteins, which contribute to the propagation of tissue damage. One important target of Hb׳s peroxidase reactivity is its own globin structure. Amino acid oxidation and crosslinking events destabilize the protein and ultimately cause accumulation of proinflammatory and cytotoxic Hb degradation products. The Hb scavenger haptoglobin (Hp) attenuates oxidation-induced Hb degradation. In this study we show that in the presence of hydrogen peroxide (H2O2), Hb and the Hb:Hp complex share comparable peroxidative reactivity and free radical generation. While oxidation of both free Hb and Hb:Hp complex generates a common tyrosine-based free radical, the spin-trapping reaction with 5,5-dimethyl-1-pyrroline N-oxide (DMPO) yields dissimilar paramagnetic products in Hb and Hb:Hp, suggesting that radicals are differently redistributed within the complex before reacting with the spin trap. With LC-MS(2) mass spectrometry we assigned multiple known and novel DMPO adduct sites. Quantification of these adducts suggested that the Hb:Hp complex formation causes extensive delocalization of accessible free radicals with drastic reduction of the major tryptophan and cysteine modifications in the β-globin chain of the Hb:Hp complex, including decreased βCys93 DMPO adduction. In contrast, the quantitative changes in DMPO adduct formation on Hb:Hp complex formation were less pronounced in the Hb α-globin chain. In contrast to earlier speculations, we found no evidence that free Hb radicals are delocalized to the Hp chain of the complex. The observation that Hb:Hp complex formation alters free radical distribution in Hb may help to better understand the structural basis for Hp as an antioxidant protein. Copyright © 2015 Elsevier Inc. All rights reserved.

Atomic physics measurements in an electron Beam Ion Trap

International Nuclear Information System (INIS)

Marrs, R.E.; Beiersdorfer, P.; Bennett, C.

1989-01-01

An electron Beam Ion Trap at Lawrence Livermore National Laboratory is being used to produce and trap very-highly-charged ions (q ≤ 70/+/) for x-ray spectroscopy measurements. Recent measurements of transition energies and electron excitation cross sections for x-ray line emission are summarized. 13 refs., 10 figs

New apparatus of single particle trap system for aerosol visualization

Science.gov (United States)

Higashi, Hidenori; Fujioka, Tomomi; Endo, Tetsuo; Kitayama, Chiho; Seto, Takafumi; Otani, Yoshio

2014-08-01

Control of transport and deposition of charged aerosol particles is important in various manufacturing processes. Aerosol visualization is an effective method to directly observe light scattering signal from laser-irradiated single aerosol particle trapped in a visualization cell. New single particle trap system triggered by light scattering pulse signal was developed in this study. The performance of the device was evaluated experimentally. Experimental setup consisted of an aerosol generator, a differential mobility analyzer (DMA), an optical particle counter (OPC) and the single particle trap system. Polystylene latex standard (PSL) particles (0.5, 1.0 and 2.0 μm) were generated and classified according to the charge by the DMA. Singly charged 0.5 and 1.0 μm particles and doubly charged 2.0 μm particles were used as test particles. The single particle trap system was composed of a light scattering signal detector and a visualization cell. When the particle passed through the detector, trigger signal with a given delay time sent to the solenoid valves upstream and downstream of the visualization cell for trapping the particle in the visualization cell. The motion of particle in the visualization cell was monitored by CCD camera and the gravitational settling velocity and the electrostatic migration velocity were measured from the video image. The aerodynamic diameter obtained from the settling velocity was in good agreement with Stokes diameter calculated from the electrostatic migration velocity for individual particles. It was also found that the aerodynamic diameter obtained from the settling velocity was a one-to-one function of the scattered light intensity of individual particles. The applicability of this system will be discussed.

Limit on the electric charge of antihydrogen

Energy Technology Data Exchange (ETDEWEB)

Capra, A., E-mail: acapra@triumf.ca; Amole, C. [York University, Department of Physics and Astronomy (Canada); Ashkezari, M. D. [Simon Fraser University, Department of Physics (Canada); Baquero-Ruiz, M. [University of California at Berkeley, Department of Physics (United States); Bertsche, W. [University of Manchester, School of Physics and Astronomy (United Kingdom); Butler, E. [Imperial College, Centre for Cold Matter (United Kingdom); Cesar, C. L. [Universidade Federal do Rio de Janeiro, Instituto de Física (Brazil); Charlton, M.; Eriksson, S. [Swansea University, Department of Physics, College of Science (United Kingdom); Fajans, J. [University of California at Berkeley, Department of Physics (United States); Friesen, T. [University of Calgary, Department of Physics and Astronomy (Canada); Fujiwara, M. C.; Gill, D. R. [TRIUMF (Canada); Gutierrez, A. [University of British Columbia, Department of Physics and Astronomy (Canada); Hangst, J. S. [CERN, Physics Department (Switzerland); Hardy, W. N. [University of British Columbia, Department of Physics and Astronomy (Canada); Hayden, M. E. [Simon Fraser University, Department of Physics (Canada); Isaac, C. A. [Swansea University, Department of Physics, College of Science (United Kingdom); Jonsell, S. [Stockholm University, Department of Physics (Sweden); Kurchaninov, L. [TRIUMF (Canada); and others

2017-11-15

The ALPHA collaboration has successfully demonstrated the production and the confinement of cold antihydrogen, H̅. An analysis of trapping data allowed a stringent limit to be placed on the electric charge of the simplest antiatom. Charge neutrality of matter is known to a very high precision, hence a neutrality limit of H̅ provides a test of CPT invariance. The experimental technique is based on the measurement of the deflection of putatively charged H̅ in an electric field. The tendency for trapped H̅ atoms to be displaced by electrostatic fields is measured and compared to the results of a detailed simulation of H̅ dynamics in the trap. An extensive survey of the systematic errors was performed, and this work focuses on those due to the silicon vertex detector, which is the device used to determine the H̅ annihilation position. The limit obtained on the charge of the H̅ atom is Q = (−1.3 ± 1.8 ± 0.4) × 10{sup −8}, representing the first precision measurement with H̅ [1].

Deuterium trapping in ion implanted and co-deposited beryllium oxide layers

International Nuclear Information System (INIS)

Markin, A.V.; Gorodetsky, A.E.; Zakharov, A.P.; Wu, C.H.

2000-01-01

Deuterium trapping in beryllium oxide films irradiated with 400 eV D ions has been studied by thermal desorption spectroscopy (TDS). It has been found that for thermally grown BeO films implanted in the range 300 - 900 K the total deuterium retention doesn't depend whereas TDS spectra do markedly on irradiation temperature. For R.T. implantation the deuterium is released in a wide range from 500 to 1100 K. At implantation above 600 K the main portion of retained deuterium is released in a single peak centered at about 1000 K. The similar TDS peak is measured for D/BeO co-deposited layer. In addition we correlate our implantation data on BeO with the relevant data on beryllium metal and carbon. The interrelations between deuterium retention and microstructure are discussed. (orig.)

Application of »Mass Titration« to Determination of Surface Charge of Metal Oxides

OpenAIRE

1998-01-01

The mass titration method, used for the point of zero charge determination, was extended to the measurement of the surface charge density. The results agree with the common method, which is the acid-base titration of the colloidal suspension. The advantage of mass titration is that one does not need to perform blank titration, instead one simply adds metal oxide powder to the electrolyte aqueous solution of known pH. To cover the pH range above and below the point of zero charge, two experime...

N-tert-butylmethanimine N-oxide is an efficient spin-trapping probe for EPR analysis of glutathione thiyl radical

Science.gov (United States)

Scott, Melanie J.; Billiar, Timothy R.; Stoyanovsky, Detcho A.

2016-01-01

The electron spin resonance (EPR) spin-trapping technique allows detection of radical species with nanosecond half-lives. This technique is based on the high rates of addition of radicals to nitrones or nitroso compounds (spin traps; STs). The paramagnetic nitroxides (spin-adducts) formed as a result of reactions between STs and radical species are relatively stable compounds whose EPR spectra represent “structural fingerprints” of the parent radical species. Herein we report a novel protocol for the synthesis of N-tert-butylmethanimine N-oxide (EBN), which is the simplest nitrone containing an α-H and a tertiary α′-C atom. We present EPR spin-trapping proof that: (i) EBN is an efficient probe for the analysis of glutathione thiyl radical (GS•); (ii) β-cyclodextrins increase the kinetic stability of the spin-adduct EBN/•SG; and (iii) in aqueous solutions, EBN does not react with superoxide anion radical (O2−•) to form EBN/•OOH to any significant extent. The data presented complement previous studies within the context of synthetic accessibility to EBN and efficient spin-trapping analysis of GS•. PMID:27941944

Single-molecule dynamics in nanofabricated traps

Science.gov (United States)

Cohen, Adam

2009-03-01

The Anti-Brownian Electrokinetic trap (ABEL trap) provides a means to immobilize a single fluorescent molecule in solution, without surface attachment chemistry. The ABEL trap works by tracking the Brownian motion of a single molecule, and applying feedback electric fields to induce an electrokinetic motion that approximately cancels the Brownian motion. We present a new design for the ABEL trap that allows smaller molecules to be trapped and more information to be extracted from the dynamics of a single molecule than was previously possible. In particular, we present strategies for extracting dynamically fluctuating mobilities and diffusion coefficients, as a means to probe dynamic changes in molecular charge and shape. If one trapped molecule is good, many trapped molecules are better. An array of single molecules in solution, each immobilized without surface attachment chemistry, provides an ideal test-bed for single-molecule analyses of intramolecular dynamics and intermolecular interactions. We present a technology for creating such an array, using a fused silica plate with nanofabricated dimples and a removable cover for sealing single molecules within the dimples. With this device one can watch the shape fluctuations of single molecules of DNA or study cooperative interactions in weakly associating protein complexes.

Preparation of Layered-Spinel Microsphere/Reduced Graphene Oxide Cathode Materials for Ultrafast Charge-Discharge Lithium-Ion Batteries.

Science.gov (United States)

Luo, Dong; Fang, Shaohua; Yang, Li; Hirano, Shin-Ichi

2017-12-22

Although Li-rich layered oxides (LLOs) have the highest capacity of any cathodes used, the rate capability of LLOs falls short of meeting the requirements of electric vehicles and smart grids. Herein, a layered-spinel microsphere/reduced graphene oxide heterostructured cathode (LS@rGO) is prepared in situ. This cathode is composed of a spinel phase, two layered structures, and a small amount of reduced graphene oxide (1.08 wt % of carbon). The assembly delivers a considerable charge capacity (145 mA h g -1 ) at an ultrahigh charge- discharge rate of 60 C (12 A g -1 ). The rate capability of LS@rGO is influenced by the introduced spinel phase and rGO. X-ray absorption and X-ray photoelectron spectroscopy data indicate that Cr ions move from octahedral lattice sites to tetrahedral lattice sites, and that Mn ions do not participate in the oxidation reaction during the initial charge process. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

Empirical study of the metal-nitride-oxide-semiconductor device characteristics deduced from a microscopic model of memory traps

International Nuclear Information System (INIS)

Ngai, K.L.; Hsia, Y.

1982-01-01

A graded-nitride gate dielectric metal-nitride-oxide-semiconductor (MNOS) memory transistor exhibiting superior device characteristics is presented and analyzed based on a qualitative microscopic model of the memory traps. The model is further reviewed to interpret some generic properties of the MNOS memory transistors including memory window, erase-write speed, and the retention-endurance characteristic features

Space-charge Effect on Electroresistance in Metal-Ferroelectric-Metal capacitors

Science.gov (United States)

Tian, Bo Bo; Liu, Yang; Chen, Liu Fang; Wang, Jian Lu; Sun, Shuo; Shen, Hong; Sun, Jing Lan; Yuan, Guo Liang; Fusil, Stéphane; Garcia, Vincent; Dkhil, Brahim; Meng, Xiang Jian; Chu, Jun Hao

2015-12-01

Resistive switching through electroresistance (ER) effect in metal-ferroelectric-metal (MFM) capacitors has attracted increasing interest due to its potential applications as memories and logic devices. However, the detailed electronic mechanisms resulting in large ER when polarisation switching occurs in the ferroelectric barrier are still not well understood. Here, ER effect up to 1000% at room temperature is demonstrated in C-MOS compatible MFM nanocapacitors with a 8.8 nm-thick poly(vinylidene fluoride) (PVDF) homopolymer ferroelectric, which is very promising for silicon industry integration. Most remarkably, using theory developed for metal-semiconductor rectifying contacts, we derive an analytical expression for the variation of interfacial barrier heights due to space-charge effect that can interpret the observed ER response. We extend this space-charge model, related to the release of trapped charges by defects, to MFM structures made of ferroelectric oxides. This space-charge model provides a simple and straightforward tool to understand recent unusual reports. Finally, this work suggests that defect-engineering could be an original and efficient route for tuning the space-charge effect and thus the ER performances in future electronic devices.

Trapping Dynamics in Photosystem I-Light Harvesting Complex I of Higher Plants Is Governed by the Competition Between Excited State Diffusion from Low Energy States and Photochemical Charge Separation.

Science.gov (United States)

Molotokaite, Egle; Remelli, William; Casazza, Anna Paola; Zucchelli, Giuseppe; Polli, Dario; Cerullo, Giulio; Santabarbara, Stefano

2017-10-26

The dynamics of excited state equilibration and primary photochemical trapping have been investigated in the photosystem I-light harvesting complex I isolated from spinach, by the complementary time-resolved fluorescence and transient absorption approaches. The combined analysis of the experimental data indicates that the excited state decay is described by lifetimes in the ranges of 12-16 ps, 32-36 ps, and 64-77 ps, for both detection methods, whereas faster components, having lifetimes of 550-780 fs and 4.2-5.2 ps, are resolved only by transient absorption. A unified model capable of describing both the fluorescence and the absorption dynamics has been developed. From this model it appears that the majority of excited state equilibration between the bulk of the antenna pigments and the reaction center occurs in less than 2 ps, that the primary charge separated state is populated in ∼4 ps, and that the charge stabilization by electron transfer is completed in ∼70 ps. Energy equilibration dynamics associated with the long wavelength absorbing/emitting forms harbored by the PSI external antenna are also characterized by a time mean lifetime of ∼75 ps, thus overlapping with radical pair charge stabilization reactions. Even in the presence of a kinetic bottleneck for energy equilibration, the excited state dynamics are shown to be principally trap-limited. However, direct excitation of the low energy chlorophyll forms is predicted to lengthen significantly (∼2-folds) the average trapping time.

Trapped antihydrogen

Energy Technology Data Exchange (ETDEWEB)

Butler, E., E-mail: eoin.butler@cern.ch [CERN, Physics Department (Switzerland); Andresen, G. B. [Aarhus University, Department of Physics and Astronomy (Denmark); Ashkezari, M. D. [Simon Fraser University, Department of Physics (Canada); Baquero-Ruiz, M. [University of California, Department of Physics (United States); Bertsche, W. [Swansea University, Department of Physics (United Kingdom); Bowe, P. D. [Aarhus University, Department of Physics and Astronomy (Denmark); Cesar, C. L. [Universidade Federal do Rio de Janeiro, Instituto de Fisica (Brazil); Chapman, S. [University of California, Department of Physics (United States); Charlton, M.; Deller, A.; Eriksson, S. [Swansea University, Department of Physics (United Kingdom); Fajans, J. [University of California, Department of Physics (United States); Friesen, T.; Fujiwara, M. C. [University of Calgary, Department of Physics and Astronomy (Canada); Gill, D. R. [TRIUMF (Canada); Gutierrez, A. [University of British Columbia, Department of Physics and Astronomy (Canada); Hangst, J. S. [Aarhus University, Department of Physics and Astronomy (Denmark); Hardy, W. N. [University of British Columbia, Department of Physics and Astronomy (Canada); Hayden, M. E. [Simon Fraser University, Department of Physics (Canada); Humphries, A. J. [Swansea University, Department of Physics (United Kingdom); Collaboration: ALPHA Collaboration; and others

2012-12-15

Precision spectroscopic comparison of hydrogen and antihydrogen holds the promise of a sensitive test of the Charge-Parity-Time theorem and matter-antimatter equivalence. The clearest path towards realising this goal is to hold a sample of antihydrogen in an atomic trap for interrogation by electromagnetic radiation. Achieving this poses a huge experimental challenge, as state-of-the-art magnetic-minimum atom traps have well depths of only {approx}1 T ({approx}0.5 K for ground state antihydrogen atoms). The atoms annihilate on contact with matter and must be 'born' inside the magnetic trap with low kinetic energies. At the ALPHA experiment, antihydrogen atoms are produced from antiprotons and positrons stored in the form of non-neutral plasmas, where the typical electrostatic potential energy per particle is on the order of electronvolts, more than 10{sup 4} times the maximum trappable kinetic energy. In November 2010, ALPHA published the observation of 38 antiproton annihilations due to antihydrogen atoms that had been trapped for at least 172 ms and then released-the first instance of a purely antimatter atomic system confined for any length of time (Andresen et al., Nature 468:673, 2010). We present a description of the main components of the ALPHA traps and detectors that were key to realising this result. We discuss how the antihydrogen atoms were identified and how they were discriminated from the background processes. Since the results published in Andresen et al. (Nature 468:673, 2010), refinements in the antihydrogen production technique have allowed many more antihydrogen atoms to be trapped, and held for much longer times. We have identified antihydrogen atoms that have been trapped for at least 1,000 s in the apparatus (Andresen et al., Nature Physics 7:558, 2011). This is more than sufficient time to interrogate the atoms spectroscopically, as well as to ensure that they have relaxed to their ground state.

Highly efficient bioinspired molecular Ru water oxidation catalysts with negatively charged backbone ligands.

Science.gov (United States)

Duan, Lele; Wang, Lei; Li, Fusheng; Li, Fei; Sun, Licheng

2015-07-21

The oxygen evolving complex (OEC) of the natural photosynthesis system II (PSII) oxidizes water to produce oxygen and reducing equivalents (protons and electrons). The oxygen released from PSII provides the oxygen source of our atmosphere; the reducing equivalents are used to reduce carbon dioxide to organic products, which support almost all organisms on the Earth planet. The first photosynthetic organisms able to split water were proposed to be cyanobacteria-like ones appearing ca. 2.5 billion years ago. Since then, nature has chosen a sustainable way by using solar energy to develop itself. Inspired by nature, human beings started to mimic the functions of the natural photosynthesis system and proposed the concept of artificial photosynthesis (AP) with the view to creating energy-sustainable societies and reducing the impact on the Earth environments. Water oxidation is a highly energy demanding reaction and essential to produce reducing equivalents for fuel production, and thereby effective water oxidation catalysts (WOCs) are required to catalyze water oxidation and reduce the energy loss. X-ray crystallographic studies on PSII have revealed that the OEC consists of a Mn4CaO5 cluster surrounded by oxygen rich ligands, such as oxyl, oxo, and carboxylate ligands. These negatively charged, oxygen rich ligands strongly stabilize the high valent states of the Mn cluster and play vital roles in effective water oxidation catalysis with low overpotential. This Account describes our endeavors to design effective Ru WOCs with low overpotential, large turnover number, and high turnover frequency by introducing negatively charged ligands, such as carboxylate. Negatively charged ligands stabilized the high valent states of Ru catalysts, as evidenced by the low oxidation potentials. Meanwhile, the oxygen production rates of our Ru catalysts were improved dramatically as well. Thanks to the strong electron donation ability of carboxylate containing ligands, a seven

Penning-trap Q-value determination of the 71Ga(ν,e−)71Ge reaction using threshold charge breeding of on-line produced isotopes

International Nuclear Information System (INIS)

Frekers, D.; Simon, M.C.; Andreoiu, C.; Bale, J.C.; Brodeur, M.; Brunner, T.; Chaudhuri, A.; Chowdhury, U.; Crespo López-Urrutia, J.R.; Delheij, P.; Ejiri, H.; Ettenauer, S.; Gallant, A.T.; Gavrin, V.; Grossheim, A.; Harakeh, M.N.; Jang, F.; Kwiatkowski, A.A.

2013-01-01

We present a first direct Q-value measurement of the 71 Ga(ν,e − ) 71 Ge reaction using the TITAN mass-measurement facility at ISAC/TRIUMF. The measurements were performed in a Penning trap on neon-like 71 Ga 21+ and 71 Ge 22+ using isobar separation of the on-line produced mother and daughter nuclei through threshold charge breeding in an electron-beam ion trap. In addition, isoionic samples of 71 Ga 21+ and 71 Ge 21+ were stored concurrently in the Penning trap and provided a separate Q-value measurement. Both independent measurements result in a combined Q-value of 233.5±1.2 keV, which is in agreement with the previously accepted Q-value for the ν cross-section calculations. Together with a recent measurement of the ν-response from the excited states in 71 Ge, we conclude that there are no further uncertainties in the nuclear structure, which could remove the persistent discrepancy between the SAGE and GALLEX calibration measurements performed with neutrinos from reactor-produced 51 Cr and 37 Ar sources and the theoretical expectation

Metal Oxides as Efficient Charge Transporters in Perovskite Solar Cells

KAUST Repository

Haque, Mohammed

2017-07-10

Over the past few years, hybrid halide perovskites have emerged as a highly promising class of materials for photovoltaic technology, and the power conversion efficiency of perovskite solar cells (PSCs) has accelerated at an unprecedented pace, reaching a record value of over 22%. In the context of PSC research, wide-bandgap semiconducting metal oxides have been extensively studied because of their exceptional performance for injection and extraction of photo-generated carriers. In this comprehensive review, we focus on the synthesis and applications of metal oxides as electron and hole transporters in efficient PSCs with both mesoporous and planar architectures. Metal oxides and their doped variants with proper energy band alignment with halide perovskites, in the form of nanostructured layers and compact thin films, can not only assist with charge transport but also improve the stability of PSCs under ambient conditions. Strategies for the implementation of metal oxides with tailored compositions and structures, and for the engineering of their interfaces with perovskites will be critical for the future development and commercialization of PSCs.

Interactions of human hemoglobin with charged ligand-functionalized iron oxide nanoparticles and effect of counterions

Energy Technology Data Exchange (ETDEWEB)

Ghosh, Goutam, E-mail: ghoshg@yahoo.com [UGC-DAE Consortium for Scientific Research, Mumbai Centre (India); Panicker, Lata [Bhabha Atomic Research Centre, Solid State Physics Division (India)

2014-12-15

Human hemoglobin is an important metalloprotein. It has tetrameric structure with each subunit containing a ‘heme’ group which carries oxygen and carbon dioxide in blood. In this work, we have investigated the interactions of human hemoglobin (Hb) with charged ligand-functionalized iron oxide nanoparticles and the effect of counterions, in aqueous medium. Several techniques like DLS and ζ-potential measurements, UV–vis, fluorescence, and CD spectroscopy have been used to characterize the interaction. The nanoparticle size was measured to be in the range of 20–30 nm. Our results indicated the binding of Hb with both positively as well as negatively charged ligand-functionalized iron oxide nanoparticles in neutral aqueous medium which was driven by the electrostatic and the hydrophobic interactions. The electrostatic binding interaction was not seen in phosphate buffer at pH 7.4. We have also observed that the ‘heme’ groups of Hb remained unaffected on binding with charged nanoparticles, suggesting the utility of the charged ligand-functionalized nanoparticles in biomedical applications.

Anti-tumor activity of self-charged (Eu,Ca):WO3 and Eu:CaWO4 nanoparticles

International Nuclear Information System (INIS)

Lin, Cao; Cong, Wang; De'An, Pan; Jiexin, Cao; Ping, Che; Volinsky, Alex A.

2012-01-01

Non-stoichiometric (Eu,Ca):WO 3 and Eu:CaWO 4 nanoparticles with anti-tumor activity are synthesized in a sol-gel method by adding excessive Eu 3+ and Ca 2+ ions to tungsten oxide crystal structure. Colorimetric assay shows that 10 nm (Eu,Ca):WO 3 and Eu:CaWO 4 nanoparticles can effectively inhibit growth of mammary cancer cells without any harm to normal cells. Nanoparticles are characterized by X-ray diffraction, high resolution transmission electron microscopy and fluorescence optical spectrometry. Nanomaterials, insoluble in synthesized water, have complicated self-charging surfaces that trap mammary cancer cells. Surface self-charging effect is suggested as the inhibition mechanism. (author)

Oxidation and Metal-Insertion in Molybdenite Surfaces: Evaluation of Charge-Transfer Mechanisms and Dynamics

Energy Technology Data Exchange (ETDEWEB)

Ramana, Chintalapalle V.; Becker, U.; Shutthanandan, V.; Julien, C. M.

2008-06-05

Molybdenum sulfide (MoS2), an important representative member of the layered transition-metal dichalcogenides, has been of special importance to the research community of geochemistry, materials and environmental chemistry, and industrial science and technology. Understanding the oxidation behavior and charge-transfer mechanisms in MoS2 is important to gain better insight into the degradation of this mineral in the environment. On the other hand understanding the insertion of metals into molybdenite and evaluation of charge-transfer mechanism and dynamics is quite important to utilize these minerals in technological applications. Furthermore, such a detailed investigation of thermal oxidation behavior and intercalation process will provide a basis to further explore and model the mechanism of adsorption of metal ions on to geomedia. Therefore, the present work was performed to understand the oxidation and intercalation processes of molybdenite surfaces. The results obtained, using a wide variety of analytical techniques, are presented and discussed in this paper.

Electron trapping in neutron-irradiated very thin films of Al2O3

International Nuclear Information System (INIS)

Srivastava, P.C.; Bardhan, A.R.

1979-01-01

Oxide layers of thicknesses less than 100 A have been prepared by thermal-oxidation of a base metal electrode film of aluminium. These films were then neutron-irradiated from a laboratory Ra-Be source to a fluence of approximately 10 11 neutrons cm -2 and the sandwich structure, Al-Al 2 O 3 -Au, was completed by depositing a thin metal film of gold over the irradiated oxide layer. D.C. steady and transient flow through the sandwich structures have been studied. Results obtained in the experiments with irradiated sandwiches have been compared with unirradiated ones to show that traps are introduced because of the damage caused by the incident neutrons. Transient voltage measurement across the junction gives a trap density of approximately 10 18 cm -3 . A capture cross-section of the order 10 -28 cm 2 is estimated for the traps. It is found that the (identified) traps are uniformly distributed within an energy of 0.099 eV below the conduction band edge of aluminium oxide. The physical nature of the traps is discussed by comparing the capture cross-sections of the physically known trapping centres. The possibility of vacancies or F-centres acting as traps (for the identified ones) has been suggested. (author)

Status of the Penning trap project in Munich

International Nuclear Information System (INIS)

Szerypo, J.; Kolhinen, V.S.; Gartzke, E.; Habs, D.; Neumayr, J.; Schuermann, C.; Sewtz, M.; Thirolf, P.G.; Bussmann, M.; Schramm, U.

2009-01-01

The MLLTRAP at the Maier-Leibnitz-Laboratory (Garching) is a new Penning trap facility designed to combine several novel technologies to decelerate, charge breed, cool, bunch and purify the reaction products and perform high-accuracy nuclear and atomic mass measurements. It is now in the commissioning phase, achieving a mass-resolving power of about 10 5 in the purification trap for stable ions. (orig.)

Status of the Penning trap project in Munich

Energy Technology Data Exchange (ETDEWEB)

Szerypo, J.; Kolhinen, V.S.; Gartzke, E.; Habs, D.; Neumayr, J.; Schuermann, C.; Sewtz, M.; Thirolf, P.G. [University of Munich (LMU) and Maier-Leibnitz-Laboratory (MLL), Faculty of Physics, Garching (Germany); Bussmann, M.; Schramm, U. [University of Munich (LMU) and Maier-Leibnitz-Laboratory (MLL), Faculty of Physics, Garching (Germany); Forschungszentrum Dresden-Rossendorf, Dresden (Germany)

2009-12-15

The MLLTRAP at the Maier-Leibnitz-Laboratory (Garching) is a new Penning trap facility designed to combine several novel technologies to decelerate, charge breed, cool, bunch and purify the reaction products and perform high-accuracy nuclear and atomic mass measurements. It is now in the commissioning phase, achieving a mass-resolving power of about 10{sup 5} in the purification trap for stable ions. (orig.)

Charge separation in contact systems with CdSe quantum dot layers

Energy Technology Data Exchange (ETDEWEB)

Zillner, Elisabeth Franziska

2013-03-06

Quantum dot (QD) solar cells are a fast developing area in the field of solution processed photovoltaics. Central aspects for the application of QDs in solar cells are separation and transport of charge carriers in the QD layers and the formation of charge selective contacts. Even though efficiencies of up to 7% were reached in QD solar cells, these processes are not yet fully understood. In this thesis the mechanisms of charge separation, transport and recombination in CdSe QD layers and layer systems were studied. Charge separation was measured via surface photovoltage (SPV) at CdSe QD layers with thicknesses in the range of monolayers. To determine the influence of interparticle distance of QDs and trap states on the surface of QDs on charge separation, QDs with four different surfactant layers were studied. Layers of CdSe QDs were prepared on ITO, Si, SiO{sub 2} and CdS by dip coating under inert atmosphere. The layers were characterized by Rutherford backscattering spectrometry, UV-vis spectroscopy, step profilometry and scanning electron microscopy to determine the areal density, the absorption and thickness of CdSe QD monolayers. SPV measurements show that initial charge separation from the CdSe QDs on ITO only happened from the fi rst monolayer of QDs. Electrons, photo-excited in the fi rst monolayer of CdSe QDs, were trapped on the ITO surface. The remaining free holes were trapped in surface states and/or diffused into the neighboring QD layers. The thick surfactant layer ({approx} 1.6 nm) of pristine QDs had to be reduced by washing and/or ligand exchange for separation of photo-excited charge carriers. Both, interparticle distance and trap density, influenced the processes of charge separation and recombination. SPV transients of CdSe monolayers could be described by a single QD approximation model, based on Miller-Abrahams hopping of holes between the delocalized excitonic state, traps on the surface of the QD and the filled trap on the ITO surface

Charge separation in contact systems with CdSe quantum dot layers

International Nuclear Information System (INIS)

Zillner, Elisabeth Franziska

2013-01-01

Quantum dot (QD) solar cells are a fast developing area in the field of solution processed photovoltaics. Central aspects for the application of QDs in solar cells are separation and transport of charge carriers in the QD layers and the formation of charge selective contacts. Even though efficiencies of up to 7% were reached in QD solar cells, these processes are not yet fully understood. In this thesis the mechanisms of charge separation, transport and recombination in CdSe QD layers and layer systems were studied. Charge separation was measured via surface photovoltage (SPV) at CdSe QD layers with thicknesses in the range of monolayers. To determine the influence of interparticle distance of QDs and trap states on the surface of QDs on charge separation, QDs with four different surfactant layers were studied. Layers of CdSe QDs were prepared on ITO, Si, SiO 2 and CdS by dip coating under inert atmosphere. The layers were characterized by Rutherford backscattering spectrometry, UV-vis spectroscopy, step profilometry and scanning electron microscopy to determine the areal density, the absorption and thickness of CdSe QD monolayers. SPV measurements show that initial charge separation from the CdSe QDs on ITO only happened from the fi rst monolayer of QDs. Electrons, photo-excited in the fi rst monolayer of CdSe QDs, were trapped on the ITO surface. The remaining free holes were trapped in surface states and/or diffused into the neighboring QD layers. The thick surfactant layer (∼ 1.6 nm) of pristine QDs had to be reduced by washing and/or ligand exchange for separation of photo-excited charge carriers. Both, interparticle distance and trap density, influenced the processes of charge separation and recombination. SPV transients of CdSe monolayers could be described by a single QD approximation model, based on Miller-Abrahams hopping of holes between the delocalized excitonic state, traps on the surface of the QD and the filled trap on the ITO surface

Ion traps fabricated in a CMOS foundry

Energy Technology Data Exchange (ETDEWEB)

Mehta, K. K.; Ram, R. J. [Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139 (United States); Eltony, A. M.; Chuang, I. L. [Center for Ultracold Atoms, Research Laboratory of Electronics and Department of Physics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139 (United States); Bruzewicz, C. D.; Sage, J. M., E-mail: jsage@ll.mit.edu; Chiaverini, J., E-mail: john.chiaverini@ll.mit.edu [Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts 02420 (United States)

2014-07-28

We demonstrate trapping in a surface-electrode ion trap fabricated in a 90-nm CMOS (complementary metal-oxide-semiconductor) foundry process utilizing the top metal layer of the process for the trap electrodes. The process includes doped active regions and metal interconnect layers, allowing for co-fabrication of standard CMOS circuitry as well as devices for optical control and measurement. With one of the interconnect layers defining a ground plane between the trap electrode layer and the p-type doped silicon substrate, ion loading is robust and trapping is stable. We measure a motional heating rate comparable to those seen in surface-electrode traps of similar size. This demonstration of scalable quantum computing hardware utilizing a commercial CMOS process opens the door to integration and co-fabrication of electronics and photonics for large-scale quantum processing in trapped-ion arrays.

BRICTEST: a code for charge breeding simulations in RF quadrupolar field

International Nuclear Information System (INIS)

Variale, V.; Claudione, M.

2005-01-01

In the framework of the SPES project (Study for Production of Exotic Species), funded by Istituto Nazionale Fisica Nucleare (INFN) at the Laboratori Nazionali Legnaro (LNL) (Padua) for Radioactive Ion Beam (RIB) production, an R and D experiment of a charge breeder device, called BRIC (BReeding Ion Charge), is in progress at LNL. BRIC is an Electron Beam Ion Source (EBIS) type ion charge state breeder in which a radio frequency (RF) quadrupolar field has been superimposed in the trapped ion region to introduce a selective containment with the aim of increasing the wanted ion trapping efficiency. A code that studies the motion and the ion charge state evolution in the trap region of the BRIC device has been recently developed in the Bari INFN section. That code has the aim of showing if, in the presence of an axial magnetic field and electron beam space charge force, the RF quadrupole field can still give a selective ion containment in the EBIS trap region. The code, furthermore, should allow choosing the RF quadrupole parameters to optimize the ion charge containment efficiency. In this paper the main feature of the code, named BRICTEST, and the simulation test will be presented and shortly discussed

Stability of Coulomb crystals in a linear Paul trap with storage-ring-like confinement

DEFF Research Database (Denmark)

Kjærgaard, Niels; Mølhave, Kristian; Drewsen, Michael

2002-01-01

We report experiments on the stability of ion Coulomb crystals in a linear Paul trap with storage-ring-like confinement. The transverse dynamics of charged particles in a trap of this type is analogous to that of a fast beam traveling through a channel with periodic, magnetic alternating gradient...... confinement. The experimentally observed stability conditions for stationary crystals comply remarkably well with current theory of crystalline plasmas and beams.......We report experiments on the stability of ion Coulomb crystals in a linear Paul trap with storage-ring-like confinement. The transverse dynamics of charged particles in a trap of this type is analogous to that of a fast beam traveling through a channel with periodic, magnetic alternating gradient...

Synthesis, electropolymerization and oxidation kinetics of an anthraquinone-functionalized poly(3,4-ethylenedioxythiophene)

International Nuclear Information System (INIS)

Arias-Pardilla, J.; Otero, T.F.; Blanco, R.; Segura, J.L.

2010-01-01

The chemical synthesis of an EDOT derivative endowed with an electron acceptor anthraquinone moiety (AQ-EDOT) is described. The electrochemical polymerization of the monomer has been studied by cyclic voltammetry, chronoamperometry and chronopotentiometry. The monomer oxidation-polymerization takes places on platinum at potentials more positive than 1.3 V vs. Ag/AgCl. The polymer film presents a stable redox process with E 0 = 0.22 V, that can be assigned to the characteristic exchange process of the parent unsubstituted PEDOT polymer. An unstable redox process at E 0 = -1.00 V, present decreasing charges on the consecutive cycles despite that the lost reduction charge is recovered by two irreversible oxidation processes taking place at high anodic potentials 0.00 and 0.16 V. A structural charge trapping effects occurring by reduction at -1.1 V and re-oxidation at 0.16 V of the anthraquinone moiety is suggested. The stable redox process is not affected by cycling allowing the obtention of the oxidation empirical kinetics, kinetic coefficients and reaction orders. Different initial states attained by reduction at different cathodic potentials for a constant time were explored for the kinetic study.

Synthesis, electropolymerization and oxidation kinetics of an anthraquinone-functionalized poly(3,4-ethylenedioxythiophene)

Energy Technology Data Exchange (ETDEWEB)

Arias-Pardilla, J. [Centre for Electrochemistry and Intelligent Materials (CEMI), Universidad Politecnica de Cartagena, ETSII, E-30203 Cartagena (Spain); Otero, T.F., E-mail: toribio.fotero@uptc.e [Centre for Electrochemistry and Intelligent Materials (CEMI), Universidad Politecnica de Cartagena, ETSII, E-30203 Cartagena (Spain); Blanco, R.; Segura, J.L. [Departamento de Quimica Organica, Facultad de Quimica, Universidad Complutense, E-28040 Madrid (Spain)

2010-02-01

The chemical synthesis of an EDOT derivative endowed with an electron acceptor anthraquinone moiety (AQ-EDOT) is described. The electrochemical polymerization of the monomer has been studied by cyclic voltammetry, chronoamperometry and chronopotentiometry. The monomer oxidation-polymerization takes places on platinum at potentials more positive than 1.3 V vs. Ag/AgCl. The polymer film presents a stable redox process with E{sup 0} = 0.22 V, that can be assigned to the characteristic exchange process of the parent unsubstituted PEDOT polymer. An unstable redox process at E{sup 0} = -1.00 V, present decreasing charges on the consecutive cycles despite that the lost reduction charge is recovered by two irreversible oxidation processes taking place at high anodic potentials 0.00 and 0.16 V. A structural charge trapping effects occurring by reduction at -1.1 V and re-oxidation at 0.16 V of the anthraquinone moiety is suggested. The stable redox process is not affected by cycling allowing the obtention of the oxidation empirical kinetics, kinetic coefficients and reaction orders. Different initial states attained by reduction at different cathodic potentials for a constant time were explored for the kinetic study.

Formation of Pentacene wetting layer on the SiO2 surface and charge trap in the wetting layer