Optical and electrical characteristics of plasma enhanced chemical vapor deposition boron carbonitride thin films derived from N-trimethylborazine precursor

Energy Technology Data Exchange (ETDEWEB)

Sulyaeva, Veronica S., E-mail: veronica@niic.nsc.ru [Department of Functional Materials Chemistry, Nikolaev Institute of Inorganic Chemistry SB RAS, Novosibirsk 630090 (Russian Federation); Kosinova, Marina L.; Rumyantsev, Yurii M.; Kuznetsov, Fedor A. [Department of Functional Materials Chemistry, Nikolaev Institute of Inorganic Chemistry SB RAS, Novosibirsk 630090 (Russian Federation); Kesler, Valerii G. [Laboratory of Physical Principles for Integrated Microelectronics, Rzhanov Institute of Semiconductor Physics SB RAS, Novosibirsk 630090 (Russian Federation); Kirienko, Viktor V. [Laboratory of Nonequilibrium Semiconductors Systems, Rzhanov Institute of Semiconductor Physics SB RAS, Novosibirsk 630090 (Russian Federation)

2014-05-02

Thin BC{sub x}N{sub y} films have been obtained by plasma enhanced chemical vapor deposition using N-trimethylborazine as a precursor. The films were deposited on Si(100) and fused silica substrates. The grown films were characterized by ellipsometry, Fourier transform infrared spectroscopy, scanning electron microscopy, X-ray energy dispersive spectroscopy, X-ray photoelectron spectroscopy, spectrophotometry, capacitance–voltage and current–voltage measurements. The deposition parameters, such as substrate temperature (373–973 K) and gas phase composition were varied. Low temperature BC{sub x}N{sub y} films were found to be high optical transparent layers in the range of 300–2000 nm, the transmittance as high as 93% has been achieved. BC{sub x}N{sub y} layers are dielectrics with dielectric constant k = 2.2–8.9 depending on the synthesis conditions. - Highlights: • Thin BC{sub x}N{sub y} films have been obtained by plasma enhanced chemical vapor deposition. • N-trimethylborazine was used as a precursor. • Low temperature BC{sub x}N{sub y} films were found to be high optical transparent layers (93%). • BC{sub x}N{sub y} layers are dielectrics with dielectric constant k = 2.2–8.9.

Properties of CuS thin films treated in air plasma

International Nuclear Information System (INIS)

Rodriguez-Lazcano, Y.; Martinez, H.; Calixto-Rodriguez, M.; Nunez Rodriguez, A.

2009-01-01

Copper sulfide thin films were grown by chemical deposition and post treated in air plasma during 20 min. Air plasma was generated by alternating current discharge at a pressure of 4 x 10 2 Pa. The power discharge was maintained at an output of 220 V and a current of 0.2 A. Thermal annealing at 300 o C was performed for comparison. X-ray diffraction shows that plasma treatment results in phase transformation of Cu 39 S 28 (as grown) to CuS (treated by plasma). The copper lost is confirmed by X-ray fluorescence. No significant change in the optical band gap was observed due to plasma action. In addition, the electrical conductivity increases in one order of magnitude. On the other hand, the samples under plasma condition show a parallel growth to the substrate and an increase in the surface uniformity. The plasma etching removes copper due to its affinity with oxygen to form CuO, as is corroborated by optical emission spectroscopy.

Role of plasma activation in tailoring the nanostructure of multifunctional oxides thin films

Energy Technology Data Exchange (ETDEWEB)

Giangregorio, Maria M.; Losurdo, Maria; Capezzuto, Pio [Institute of Inorganic Methodologies and Plasmas, IMIP-CNR, and Department of Chemistry, University of Bari, via Orabona, 4-70125 Bari (Italy); Bruno, Giovanni [Institute of Inorganic Methodologies and Plasmas, IMIP-CNR, and Department of Chemistry, University of Bari, via Orabona, 4-70125 Bari (Italy)], E-mail: giovanni.bruno@ba.imip.cnr.it

2009-03-01

Potential of O{sub 2} remote plasmas for improving structural, morphological and optical properties of various multifunctional oxides thin films both during plasma assisted growth as well as by post-growth treatments is discussed. In particular, an O{sub 2} remote plasma metalorganic chemical vapor deposition (RP-MOCVD) route is presented for tailoring the structural, morphological and optical properties of Er{sub 2}O{sub 3} and ZnO films. Furthermore, post-growth room-temperature remote O{sub 2} plasma treatments of indium-tin-oxides (ITO) films are demonstrated to be effective in improving morphology of ITO films.

High-density plasma etching characteristics of indium-gallium-zinc oxide thin films in CF4/Ar plasma

International Nuclear Information System (INIS)

Joo, Young-Hee; Kim, Chang-Il

2015-01-01

We investigated the etching process of indium-gallium-zinc oxide (IGZO) thin films in an inductively coupled plasma system. The dry etching characteristics of the IGZO thin films were studied by varying the CF 4 /Ar gas mixing ratio, RF power, DC-bias voltage, and process pressure. We determined the following optimized process conditions: an RF power of 700 W, a DC-bias voltage of − 150 V, and a process pressure of 2 Pa. A maximum etch rate of 25.63 nm/min for the IGZO thin films was achieved in a plasma with CF 4 /Ar(= 25:75), and the selectivity of IGZO to Al and TiN was found to be 1.3 and 0.7, respectively. We determined the ionic composition of the CF 4 /Ar plasma using optical emission spectroscopy. Analysis of chemical reactions at the IGZO thin film surfaces was performed using X-ray photoelectron spectroscopy. - Highlights: • IGZO thin film was etched by CF 4 /Ar plasma as a function of gas mixing ratio. • IGZO bonds were broken Ar + sputtering and then reacted with the C-F x radicals. • The physical sputtering is dominant in etch control compared with chemical etching

Optical constants of silicon-like (Si:Ox:Cy:Hz) thin films deposited on quartz using hexamethyldisiloxane in a remote RF hollow cathode discharge plasma

International Nuclear Information System (INIS)

Saloum, S.; Naddaf, M.

2008-01-01

Deposition of amorphous silicon-like (Si:O x :C y :H z ) thin films in a remote RF hollow cathode discharge plasma using Hexamethyldisoloxane as monomer and Ar as feed gas; has been investigated for films optical constants and plasma diagnostic as a function of RF power (100-300 W) and precursor flow rate (1-10 sccm). Plasma diagnostic has been performed using optical emission spectroscopy (OES). The optical constants (refractive index, extinction coefficient and dielectric constant) have been obtained by reflection/transmission measurements in the range 300-700 nm. It is found that the refractive index increases from 1.92 to 1.97 with increasing power from 100 to 300 W, and from 1.70 to 1.92 with increasing precursor flow rate from 1 to 10 sccm. The optical energy-band gap E g and the optical-absorption tail ΔE have been estimated from optical absorption spectra, it is found that E g decreases from 3.28 eV to 3.14 eV with power increase from 100 to 300 W, and from 3.54 eV to 3.28 eV with precursor flow rate increase from 1 to 10 sccm. ΔE is found to increase with applied RF power and precursor flow rate increase. The dependence of optical constants on deposition parameters has been correlated to plasma OES. (author)

Photocatalytic Anatase TiO2 Thin Films on Polymer Optical Fiber Using Atmospheric-Pressure Plasma.

Science.gov (United States)

Baba, Kamal; Bulou, Simon; Choquet, Patrick; Boscher, Nicolas D

2017-04-19

Due to the undeniable industrial advantages of low-temperature atmospheric-pressure plasma processes, such as low cost, low temperature, easy implementation, and in-line process capabilities, they have become the most promising next-generation candidate system for replacing thermal chemical vapor deposition or wet chemical processes for the deposition of functional coatings. In the work detailed in this article, photocatalytic anatase TiO 2 thin films were deposited at a low temperature on polymer optical fibers using an atmospheric-pressure plasma process. This method overcomes the challenge of forming crystalline transition metal oxide coatings on polymer substrates by using a dry and up-scalable method. The careful selection of the plasma source and the titanium precursor, i.e., titanium ethoxide with a short alkoxy group, allowed the deposition of well-adherent, dense, and crystalline TiO 2 coatings at low substrate temperature. Raman and XRD investigations showed that the addition of oxygen to the precursor's carrier gas resulted in a further increase of the film's crystallinity. Furthermore, the films deposited in the presence of oxygen exhibited a better photocatalytic activity toward methylene blue degradation assumedly due to their higher amount of photoactive {101} facets.

Compressing and focusing a short laser pulse by a thin plasma lens

International Nuclear Information System (INIS)

Ren, C.; Duda, B. J.; Hemker, R. G.; Mori, W. B.; Katsouleas, T.; Antonsen, T. M.; Mora, P.

2001-01-01

We consider the possibility of using a thin plasma slab as an optical element to both focus and compress an intense laser pulse. By thin we mean that the focal length is larger than the lens thickness. We derive analytic formulas for the spot size and pulse length evolution of a short laser pulse propagating through a thin uniform plasma lens. The formulas are compared to simulation results from two types of particle-in-cell code. The simulations give a greater final spot size and a shorter focal length than the analytic formulas. The difference arises from spherical aberrations in the lens which lead to the generation of higher-order vacuum Gaussian modes. The simulations also show that Raman side scattering can develop. A thin lens experiment could provide unequivocal evidence of relativistic self-focusing

High-density plasma etching characteristics of indium-gallium-zinc oxide thin films in CF{sub 4}/Ar plasma

Energy Technology Data Exchange (ETDEWEB)

Joo, Young-Hee; Kim, Chang-Il

2015-05-29

We investigated the etching process of indium-gallium-zinc oxide (IGZO) thin films in an inductively coupled plasma system. The dry etching characteristics of the IGZO thin films were studied by varying the CF{sub 4}/Ar gas mixing ratio, RF power, DC-bias voltage, and process pressure. We determined the following optimized process conditions: an RF power of 700 W, a DC-bias voltage of − 150 V, and a process pressure of 2 Pa. A maximum etch rate of 25.63 nm/min for the IGZO thin films was achieved in a plasma with CF{sub 4}/Ar(= 25:75), and the selectivity of IGZO to Al and TiN was found to be 1.3 and 0.7, respectively. We determined the ionic composition of the CF{sub 4}/Ar plasma using optical emission spectroscopy. Analysis of chemical reactions at the IGZO thin film surfaces was performed using X-ray photoelectron spectroscopy. - Highlights: • IGZO thin film was etched by CF{sub 4}/Ar plasma as a function of gas mixing ratio. • IGZO bonds were broken Ar{sup +} sputtering and then reacted with the C-F{sub x} radicals. • The physical sputtering is dominant in etch control compared with chemical etching.

Plasma properties during magnetron sputtering of lithium phosphorous oxynitride thin films

DEFF Research Database (Denmark)

Christiansen, Ane Sælland; Stamate, Eugen; Thydén, Karl Tor Sune

2015-01-01

The nitrogen dissociation and plasma parameters during radio frequency sputtering of lithium phosphorus oxynitride thin films in nitrogen gas are investigated by mass appearance spectrometry, electrostatic probes and optical emission spectroscopy, and the results are correlated with electrochemical...... properties and microstructure of the films. Low pressure and moderate power are associated with lower plasma density, higher electron temperature, higher plasma potential and larger diffusion length for sputtered particles. This combination of parameters favors the presence of more atomic nitrogen, a fact...

Characterization of thin TiO2 films prepared by plasma enhanced chemical vapour deposition for optical and photocatalytic applications

International Nuclear Information System (INIS)

Sobczyk-Guzenda, A.; Gazicki-Lipman, M.; Szymanowski, H.; Kowalski, J.; Wojciechowski, P.; Halamus, T.; Tracz, A.

2009-01-01

Thin titanium oxide films were deposited using a radio frequency (RF) plasma enhanced chemical vapour deposition method. Their optical properties and thickness were determined by means of ultraviolet-visible absorption spectrophotometry. Films of the optical parameters very close to those of titanium dioxide have been obtained at the high RF power input. Their optical quality is high enough to allow for their use in a construction of stack interference optical filters. At the same time, these materials exhibit strong photocatalytic effects. The results of structural analysis, carried out by Raman Shift Spectroscopy, show that the coatings posses amorphous structure. However, Raman spectra of the same films subjected to thermal annealing at 450 o C disclose an appearance of a crystalline form, namely that of anatase. Surface morphology of the films has also been characterized by Atomic Force Microscopy revealing granular, broccoli-like topography of the films.

The role of Ar plasma treatment in generating oxygen vacancies in indium tin oxide thin films prepared by the sol-gel process

Energy Technology Data Exchange (ETDEWEB)

Hwang, Deuk-Kyu [Department of Materials Science and Engineering, Yonsei University, 50 Yonsei-ro, Seoul, 03722 (Korea, Republic of); Misra, Mirnmoy; Lee, Ye-Eun [Department of BioNano Technology, Gachon University, 1342 Seong-nam dae-ro, Seong-nam si, Gyeonggi-do, 13120 (Korea, Republic of); Baek, Sung-Doo [Department of Materials Science and Engineering, Yonsei University, 50 Yonsei-ro, Seoul, 03722 (Korea, Republic of); Myoung, Jae-Min, E-mail: jmmyoung@yonsei.ac.kr [Department of Materials Science and Engineering, Yonsei University, 50 Yonsei-ro, Seoul, 03722 (Korea, Republic of); Lee, Tae Il, E-mail: t2.lee77@gachon.ac.kr [Department of BioNano Technology, Gachon University, 1342 Seong-nam dae-ro, Seong-nam si, Gyeonggi-do, 13120 (Korea, Republic of)

2017-05-31

Highlights: • Indium tin oxide thin film with about 41 nm thickness was obtained by the sol-gel process. • Thin film exhibited low resistivity. • Sheet resistance of thin film decreases with Ar plasma treatment time. • Ar plasma treatment on thin film does not alter the crystal structure and optical properties of the ITO thin-film. • There is no significant change in oxygen vacancies after 20 min of plasma treatment. - Abstract: Argon (Ar) plasma treatment was carried out to reduce the sheet resistance of indium tin oxide (ITO) thin films. The Ar plasma treatment did not cause any significant changes to the crystal structure, surface morphology, or optical properties of the ITO thin films. However, an X-ray photoelectron spectroscopy study confirmed that the concentration of oxygen vacancies in the film dramatically increased with the plasma treatment time. Thus, we concluded that the decrease in the sheet resistance was caused by the increase in the oxygen vacancy concentration in the film. Furthermore, to verify how the concentration of oxygen vacancies in the film increased with the Ar plasma treatment time, cumulative and continuous plasma treatments were conducted. The oxygen vacancies were found to be created by surface heating via the outward thermal diffusion of oxygen atoms from inside the film.

Removal of carbon contaminations by RF plasma generated reactive species and subsequent effects on optical surface

Energy Technology Data Exchange (ETDEWEB)

Yadav, P. K., E-mail: praveenyadav@rrcat.gov.in; Rai, S. K.; Modi, M. H.; Nayak, M.; Lodha, G. S. [Indus Synchrotron Utilization Division, Raja Ramanna Centre for Advanced Technology, Indore-452013 (India); Kumar, M.; Chakera, J. A.; Naik, P. A. [Laser Plasma Laboratory, Laser Plasma Division, Raja Ramanna Centre for Advanced Technology, Indore-452013 (India)

2015-06-24

Carbon contamination on optical elements is a serious issue in synchrotron beam lines for several decades. The basic mechanism of carbon deposition on optics and cleaning strategies are not fully understood. Carbon growth mechanism and optimized cleaning procedures are worldwide under development stage. Optimized RF plasma cleaning is considered an active remedy for the same. In present study carbon contaminated optical test surfaces (carbon capped tungsten thin film) are exposed for 30 minutes to four different gases, rf plasma at constant power and constant dynamic pressure. Structural characterization (thickness, roughness and density) of virgin samples and plasma exposed samples was done by soft x-ray (λ=80 Å) reflectivity measurements at Indus-1 reflectivity beam line. Different gas plasma removes carbon with different rate (0.4 to 0.65 nm /min). A thin layer 2 to 9 nm of different roughness and density is observed at the top surface of tungsten film. Ar gas plasma is found more suitable for cleaning of tungsten surface.

Optical properties of diamond like carbon nanocomposite thin films

Science.gov (United States)

Alam, Md Shahbaz; Mukherjee, Nillohit; Ahmed, Sk. Faruque

2018-05-01

The optical properties of silicon incorporated diamond like carbon (Si-DLC) nanocomposite thin films have been reported. The Si-DLC nanocomposite thin film deposited on glass and silicon substrate by radio frequency plasma enhanced chemical vapor deposition (RF-PECVD) process. Fourier transformed infrared spectroscopic analysis revealed the presence of different bonding within the deposited films and deconvolution of FTIR spectra gives the chemical composition i.e., sp3/sp2 ratio in the films. Optical band gap calculated from transmittance spectra increased from 0.98 to 2.21 eV with a variation of silicon concentration from 0 to 15.4 at. %. Due to change in electronic structure by Si incorporation, the Si-DLC film showed a broad photoluminescence (PL) peak centered at 467 nm, i.e., in the visible range and its intensity was found to increase monotonically with at. % of Si.

Structure and optical band-gap energies of Ba0.5Sr0.5TiO3 thin films fabricated by RF magnetron plasma sputtering

International Nuclear Information System (INIS)

Xu, Zhimou; Suzuki, Masato; Yokoyama, Shin

2005-01-01

The structure and optical band-gap energies of Ba 0.5 Sr 0.5 TiO 3 (BST0.5) thin films prepared on SiO 2 /Si and fused quartz substrates by RF magnetron plasma sputtering were studied in terms of deposition temperature and film thickness. Highly (100)-oriented BST0.5 thin films were successfully sputtered on a Si substrate with an approximately 1.0-μm-thick SiO 2 layer at a deposition temperature of above 450degC. The optical transmittance of BST0.5 thin films weakly depended on the magnitude of X-ray diffraction (XRD) peak intensity. This is very helpful for monolithic integration of BST0.5 films for electrooptical functions directly onto a SiO 2 /Si substrate. The band-gap energies showed a strong dependence on the deposition temperature and film thickness. It was mainly related to the quantum size effect and the influence of the crystallinity of thin films, such as grain boundaries, grain size, oriented growth, and the existence of an amorphous phase. The band-gap energy values, which were much larger than those of single crystals, decreased with the increase in the deposition temperature and the thickness of BST0.5 thin films. The band-gap energy of 311-nm-thick amorphous BST0.5 thin film was about 4.45 eV and that of (100)-oriented BST0.5 thin film with a thickness of 447 nm was about 3.89 eV. It is believed that the dependence of the band-gap energies of the thin films on the crystallinity for various values of deposition temperature and film thickness means that there could be application in integrated optical devices. (author)

Modifications in SnS thin films by plasma treatments

Energy Technology Data Exchange (ETDEWEB)

Martinez, H., E-mail: hm@fis.unam.mx [Instituto de Ciencias Fisicas, Universidad Nacional Autonoma de Mexico, Apartado Postal 48-3, 62210 Cuernavaca, Morelos (Mexico); Avellaneda, D. [Facultad de Ingenieria Mecanica y Electrica, Universidad Autonoma de Nuevo Leon (Mexico)

2012-02-01

The present study shows the modifications of structural, optical and electrical characteristics that occur in tin sulfide (SnS) thin films treated in air and in nitrogen plasma at different pressure conditions. The films were obtained by the chemical bath deposition method, which results in SnS thin films with an orthorhombic crystalline structure, band gap (E{sub g}) of 1.1-1.2 eV, and electrical conductivities ({sigma}) in the order of 10{sup -6} {Omega}{sup -1}cm{sup -1}. The films treated with air plasma at pressures between 1 and 4 Torr, showed the presence of SnS{sub 2}, Sn{sub 2}S{sub 3}, and SnO{sub 2} phases, within the band gap values ranging from 0.9 to 1.5 eV. On the other hand, the films treated with nitrogen plasma presented the same phases, but showed a significant modification in the electrical conductivity, increasing from 10{sup -6} {Omega}{sup -1}cm{sup -1} (as-deposited) up to 10{sup -2}-10{sup -3} {Omega}{sup -1}cm{sup -1} (plasma treated). This result is a suitable range of conductivity for the improvement of the solar cells with SnS as an absorber material. Also, emission spectroscopy measurements were carried out in both air and nitrogen plasma treatments.

Optical thin films and coatings from materials to applications

CERN Document Server

Flory, Francois

2013-01-01

Optical coatings, including mirrors, anti-reflection coatings, beam splitters, and filters, are an integral part of most modern optical systems. This book provides an overview of thin film materials, the properties, design and manufacture of optical coatings and their use across a variety of application areas.$bOptical coatings, including mirrors, anti-reflection coatings, beam splitters, and filters, are an integral part of most modern optical systems. Optical thin films and coatings provides an overview of thin film materials, the properties, design and manufacture of optical coatings and their use across a variety of application areas. Part one explores the design and manufacture of optical coatings. Part two highlights unconventional features of optical thin films including scattering properties of random structures in thin films, optical properties of thin film materials at short wavelengths, thermal properties and colour effects. Part three focusses on novel materials for optical thin films and coatings...

Complete plasma dropouts at Vela satellites during thinning of the plasma sheet

International Nuclear Information System (INIS)

Lui, A.T.Y.; Hones, E.W. Jr.; Venkatesan, D.; Akasofu, S.; Bame, S.J.

1975-01-01

Five satellite years of Vela data are examined for plasma sheet thinnings. Complete proton disappearances (plasma dropouts) are the main subject here. During such times, the Vela satellite is temporarily in the high-latitude tail lobe. The distribution of such plasma dropouts within the magnetotail suggests that the semithickness of the plasma sheet near midnight seldom reaches less than 1 R/sub E/ during substorms and that the dawn and dusk portions of the plasma sheet remain thicker than the midnight portion. But it is also shown that the plasma sheet occasionally becomes very thin near the dusk magnetopause. No such severe thinnings of the plasma sheet are found near the dawn magnetopause. Plasma dropouts can occur regardless of the sign of the Z component of the IMF, but their frequency of occurrence seems to be greater when the Z component is negative.Three plasma dropouts which occurred in the midnight sector at unusually large distances from the estimated position of the neutral sheet were observed during geomagnetic storms. It is likely that the midnight sector of the plasma sheet can become very thick (approx.18 R/sub E/) at certain times during the main phase of storms. Detailed measurements in the plasma sheet were obtained near the beginning of a geomagnetic storm whose sc triggered a substorm. A compression of the plasma sheet at X/sub SM/approx. =-15 R/sub E/ occurred about 10 min after the sc onset at the earth and about 5 min after the start of plasma sheet thinning associated with the sc-related substorm. If compression-thinning of the plasma sheet initiated this substorm, the triggering action must have occurred earthward of X/sub SM/approx. =-15 R/sub E/

Plasma-assisted co-evaporation of {beta}-indium sulfide thin films

Energy Technology Data Exchange (ETDEWEB)

Kosaraju, Sreenivas; Marino, Joseph A.; Harvey, John A.; Wolden, Colin A. [Department of Chemical Engineering, Colorado School of Mines, Golden, CO 80401 (United States)

2006-05-05

This paper describes the development of plasma-assisted co-evaporation (PACE) for the formation of {beta}-In{sub 2}S{sub 3} thin films. Indium was supplied by conventional thermal evaporation, while the chalcogen gas precursor (H{sub 2}S) was activated using an inductively coupled plasma (ICP) source. Using a combination of optical emission spectroscopy and mass spectrometry it was shown that the ICP effectively dissociated H{sub 2}S, producing atomic sulfur. Transport modeling was used to quantify the flux distributions of the co-evaporated metal and the plasma-generated species impinging the substrate. Model predictions were validated by measurements of deposition rate and film properties. Substantial improvements in both materials utilization and substrate temperature reduction were realized with respect to conventional co-evaporation. {beta}-In{sub 2}S{sub 3} was formed as low as 100{sup o}C and it was observed that quality was a strong function of S/In ratio. The grain size decreased and the optical band gap increased as the substrate temperature was reduced. (author)

Thin low Z coatings for plasma devices

International Nuclear Information System (INIS)

Norem, J.; Bowers, D.A.

1978-05-01

Coating the walls of the vacuum chamber with beryllium or some other low Z material has been proposed as a possible means of solving the problems of high Z influx into plasmas. We attempt to demonstrate that very thin, low Z coatings are compatible with the operation of plasma devices and beneficial to plasma performance. We determine that the thickness of coating material required is only about 10 monolayers. In a radiation environment, radiation-induced solute segregation should help to maintain the integrity of such thin coatings against diffusion and other processes. We discuss the properties of these thin coatings and possible means of in situ application and maintenance. Since deposition of plasma impurities on the walls will occur anyway, we discuss injection of solid pellets into the plasma as a direct way of introducing impurities which would ultimately serve as coating material

Non-linear optics of nano-scale pentacene thin film

Science.gov (United States)

Yahia, I. S.; Alfaify, S.; Jilani, Asim; Abdel-wahab, M. Sh.; Al-Ghamdi, Attieh A.; Abutalib, M. M.; Al-Bassam, A.; El-Naggar, A. M.

2016-07-01

We have found the new ways to investigate the linear/non-linear optical properties of nanostructure pentacene thin film deposited by thermal evaporation technique. Pentacene is the key material in organic semiconductor technology. The existence of nano-structured thin film was confirmed by atomic force microscopy and X-ray diffraction. The wavelength-dependent transmittance and reflectance were calculated to observe the optical behavior of the pentacene thin film. It has been observed the anomalous dispersion at wavelength λ 800. The non-linear refractive index of the deposited films was investigated. The linear optical susceptibility of pentacene thin film was calculated, and we observed the non-linear optical susceptibility of pentacene thin film at about 6 × 10-13 esu. The advantage of this work is to use of spectroscopic method to calculate the liner and non-liner optical response of pentacene thin films rather than expensive Z-scan. The calculated optical behavior of the pentacene thin films could be used in the organic thin films base advanced optoelectronic devices such as telecommunications devices.

A procedure for estimating the electron temperature and the departure of the LTE condition in a time-dependent, spatially homogeneous, optically thin plasma

Energy Technology Data Exchange (ETDEWEB)

Bredice, F. [Centro de Investigaciones Opticas, La Plata (Argentina); Borges, F.O., E-mail: borges@if.uff.br [Universidade Federal Fluminense (UFF), Niteroi, RJ (Brazil). Instituto de Fisica. Lab. de Plasma e Espectroscopia; Di Rocco, H.O. [Instituto de Fisica Arroyo Seco (IFAS), Universidad Nacional del Centro, Tandil (Argentina); Mercado, R.S. [Grupo de Espectroscopia Optica de Emision y Laser (GEOEL), Universidad del Atlantico, Barranquilla (Colombia); Villagran-Muniz, M. [Laboratorio de Fotofisica, Centro de Ciencias Aplicadas y Desarrollo Tecnologico, Universidad Nacional Autonoma de Mexico (Mexico); Palleschi, V. [Applied Laser Spectroscopy Laboratory, ICCOM-CNR, Pisa (Italy)

2013-08-15

We present a method to estimate the temperature of transient plasmas and their degree of departure from local thermodynamic equilibrium conditions. Our method is based on application of the Saha–Boltzmann equations on the temporal variation of the intensity of the spectral lines of the plasma, under the assumption that the plasmas at the different times when the spectra were obtained are in local thermodynamic equilibrium. The method requires no knowledge of the spectral efficiency of the spectrometer/detector, transition probabilities of the considered lines, or degeneracies of the upper and lower levels. Provided that the conditions of optically thin, homogeneous plasma in local thermodynamic equilibrium are satisfied, the accuracy of the procedure is limited only by the precision with which the line intensities and densities can be determined at two different temperatures. The procedure generates an equation describing the temporal evolution of the electron number density of transient plasmas under local thermodynamic equilibrium conditions. The method is applied to the analysis of two laser-induced breakdown spectra of cadmium at different temperatures. (author)

A procedure for estimating the electron temperature and the departure of the LTE condition in a time-dependent, spatially homogeneous, optically thin plasma

International Nuclear Information System (INIS)

Bredice, F.; Borges, F.O.; Mercado, R.S.; Villagran-Muniz, M.; Palleschi, V.

2013-01-01

We present a method to estimate the temperature of transient plasmas and their degree of departure from local thermodynamic equilibrium conditions. Our method is based on application of the Saha–Boltzmann equations on the temporal variation of the intensity of the spectral lines of the plasma, under the assumption that the plasmas at the different times when the spectra were obtained are in local thermodynamic equilibrium. The method requires no knowledge of the spectral efficiency of the spectrometer/detector, transition probabilities of the considered lines, or degeneracies of the upper and lower levels. Provided that the conditions of optically thin, homogeneous plasma in local thermodynamic equilibrium are satisfied, the accuracy of the procedure is limited only by the precision with which the line intensities and densities can be determined at two different temperatures. The procedure generates an equation describing the temporal evolution of the electron number density of transient plasmas under local thermodynamic equilibrium conditions. The method is applied to the analysis of two laser-induced breakdown spectra of cadmium at different temperatures. (author)

Fiber optic based optical tomography sensor for monitoring plasma uniformity

International Nuclear Information System (INIS)

Benck, Eric C.; Etemadi, Kasra

2001-01-01

A new type of fiber optic based optical tomography sensor has been developed for in situ monitoring of plasma uniformity. Optical tomography inverts optical emission measurements into the actual plasma distribution without assuming radial symmetry. The new sensor is designed to operate with only two small windows and acquire the necessary data in less than a second. Optical tomography is being tested on an ICP-GEC RF plasma source. Variations in plasma uniformity are measured as a function of different plasma conditions

Layer-controllable graphene by plasma thinning and post-annealing

Science.gov (United States)

Zhang, Lufang; Feng, Shaopeng; Xiao, Shaoqing; Shen, Gang; Zhang, Xiumei; Nan, Haiyan; Gu, Xiaofeng; Ostrikov, Kostya (Ken)

2018-05-01

The electronic structure of graphene depends crucially on its layer number and therefore engineering the number of graphene's atomic stacking layers is of great importance for the preparation of graphene-based devices. In this paper, we demonstrated a relatively less invasive, high-throughput and uniform large-area plasma thinning of graphene based on direct bombardment effect of fast-moving ionic hydrogen or argon species. Any desired number of graphene layers including trilayer, bilayer and monolayer can be obtained. Structural changes of graphene layers are studied by optical microscopy, Raman spectroscopy and atomic force microscopy. Post annealing is adopted to self-heal the lattice defects induced by the ion bombardment effect. This plasma etching technique is efficient and compatible with semiconductor manufacturing processes, and may find important applications for graphene-based device fabrication.

Measurements of recombination coefficient of hydrogen atoms on plasma deposited thin films

International Nuclear Information System (INIS)

Drenik, A.; Vesel, A.; Mozetic, M.

2006-01-01

We have performed experiments in plasma afterglow in order to determine the recombination coefficients of plasma deposited thin films of tungsten and graphite. Plasma deposited films rather than bulk material were used in order to more closely emulate surface structure of plasma-facing material deposits in fusion reactors. We have also determined the recombination coefficient of 85250 borosilicate glass and Teflon. Plasma was created by means of a radio frequency generator in a mixture of argon and hydrogen at the pressures between 60 Pa and 280 Pa. The degree of dissociation of hydrogen molecules was found to be between 0.1 and 1. The H-atom density was measured by Fiber Optic Catalytic Probe. The recombination coefficient was determined by measuring the axial profile of the H-atom density and using Smith's side arm diffusion model. (author)

Structural, Optical, and Electrical Characterization of β-Ga2O3 Thin Films Grown by Plasma-Assisted Molecular Beam Epitaxy Suitable for UV Sensing

Directory of Open Access Journals (Sweden)

Abraham Arias

2018-01-01

Full Text Available β-Ga2O3 thin films were grown on c-plane sapphire substrates by plasma-assisted molecular beam epitaxy. The films were grown using an elemental gallium source and oxygen supplied by an RF plasma source. Reflection high-energy electron diffraction (RHEED was used to monitor the surface quality in real time. Both in situ RHEED and ex situ X-ray diffraction confirmed the formation of single crystal β-phase films with excellent crystallinity on c-plane sapphire. Spectroscopic ellipsometry was used to determine the film thicknesses, giving values in the 11.6–18.8 nm range and the refractive index dispersion curves. UV-Vis transmittance measurements revealed that strong absorption of β-Ga2O3 starts at ∼270 nm. Top metal contacts were deposited by thermal evaporation for I-V characterization, which has been carried out in dark, as well as under visible and UV light illumination. The optical and electrical measurements showed that the grown thin films of β-Ga2O3 are excellent candidates for deep-ultraviolet detection and sensing.

Optical and electro-optic anisotropy of epitaxial PZT thin films

Science.gov (United States)

Zhu, Minmin; Du, Zehui; Jing, Lin; Yoong Tok, Alfred Iing; Tong Teo, Edwin Hang

2015-07-01

Strong optical and electro-optic (EO) anisotropy has been investigated in ferroelectric Pb(Zr0.48Ti0.52)O3 thin films epitaxially grown on Nb-SrTiO3 (001), (011), and (111) substrates using magnetron sputtering. The refractive index, electro-optic, and ferroelectric properties of the samples demonstrate the significant dependence on the growth orientation. The linear electro-optic coefficients of the (001), (011), and (111)-oriented PZT thin films were 270.8, 198.8, and 125.7 pm/V, respectively. Such remarkable anisotropic EO behaviors have been explained according to the structure correlation between the orientation dependent distribution, spontaneous polarization, epitaxial strain, and domain pattern.

Effect of ablation geometry on the dynamics, composition, and geometrical shape of thin film plasma

Science.gov (United States)

Mondal, Alamgir; Singh, R. K.; Kumar, Ajai

2018-01-01

The characteristics of plasma plume produced by front and back ablation of thin films have been investigated using fast imaging and optical emission spectroscopy. Ablation geometry dependence of the plume dynamics, its geometrical aspect and composition is emphasized. Also, the effect of an ambient environment and the beam diameter of an ablating laser on the front and back ablations is briefly discussed. Analysis of time resolved images and plasma parameters indicates that the energetic and spherical plasma formed by front ablation is strikingly different in comparison to the slow and nearly cylindrical plasma plume observed in the case of back ablation. Further shock formation, plume confinement, thermalization and validity of different expansion models in these two ablation geometries are also presented. The present study demonstrates the manipulation of kinetic energy, shape, ion/neutral compositions and directionality of the expanding plume by adjusting the experimental configuration, which is highly relevant to its utilization in various applications e.g., generation of energetic particles, tokamak edge plasma diagnostics, thin film deposition, etc.

Thin Film Solar Cells and their Optical Properties

Directory of Open Access Journals (Sweden)

Stanislav Jurecka

2006-01-01

Full Text Available In this work we report on the optical parameters of the semiconductor thin film for solar cell applications determination. The method is based on the dynamical modeling of the spectral reflectance function combined with the stochastic optimization of the initial reflectance model estimation. The spectral dependency of the thin film optical parameters computations is based on the optical transitions modeling. The combination of the dynamical modeling and the stochastic optimization of the initial theoretical model estimation enable comfortable analysis of the spectral dependencies of the optical parameters and incorporation of the microstructure effects on the solar cell properties. The results of the optical parameters ofthe i-a-Si thin film determination are presented.

Optical modeling and simulation of thin-film photovoltaic devices

CERN Document Server

Krc, Janez

2013-01-01

In wafer-based and thin-film photovoltaic (PV) devices, the management of light is a crucial aspect of optimization since trapping sunlight in active parts of PV devices is essential for efficient energy conversions. Optical modeling and simulation enable efficient analysis and optimization of the optical situation in optoelectronic and PV devices. Optical Modeling and Simulation of Thin-Film Photovoltaic Devices provides readers with a thorough guide to performing optical modeling and simulations of thin-film solar cells and PV modules. It offers insight on examples of existing optical models

Effect of surface microstructure and wettability on plasma protein adsorption to ZnO thin films prepared at different RF powers

Energy Technology Data Exchange (ETDEWEB)

Huang Zhanyun; Chen Min; Chen Dihu [State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-Sen University, Guangzhou 510275 (China); Pan Shirong, E-mail: stscdh@mail.sysu.edu.c [Artificial Heart Lab, the 1st Affiliate Hospital of Sun Yat-Sen University, Guangzhou 510080 (China)

2010-10-01

In this paper, the adsorption behavior of plasma proteins on the surface of ZnO thin films prepared by radio frequency (RF) sputtering under different sputtering powers was studied. The microstructures and surface properties of the ZnO thin films were investigated by x-ray diffraction (XRD), scanning electron microscopy (SEM), UV-visible optical absorption spectroscopy and contact angle techniques. The results show that the ZnO thin films have better orientation of the (0 0 2) peak with increasing RF power, especially at around 160 W, and the optical band gap of the ZnO films varies from 3.2 to 3.4 eV. The contact angle test carried out by the sessile drop technique denoted a hydrophobic surface of the ZnO films, and the surface energy and adhesive work of the ZnO thin films decreased with increasing sputtering power. The amounts of human fibrinogen (HFG) and human serum albumin (HSA) adsorbing on the ZnO films and reference samples were determined by using enzyme-linked immunosorbent assay (ELISA). The results show that fewer plasma proteins and a smaller HFG/HSA ratio adsorb on the ZnO thin films' surface.

Influence of bias voltage on structural and optical properties of TiN{sub x} thin films

Energy Technology Data Exchange (ETDEWEB)

Singh, Omveer, E-mail: poonia.omveer@gmail.com [Centre for Energy Studies, Indian Institute of Technology Delhi, New Delhi – 110016 (India); Dahiya, Raj P. [Centre for Energy Studies, Indian Institute of Technology Delhi, New Delhi – 110016 (India); Deenbandhu Chhotu Ram University of Science and Technology, Murthal – 131039 (India); Malik, Hitendra K.; Kumar, Parmod [Department of Physics, Indian Institute of Technology Delhi, New Delhi – 110016 (India)

2015-08-28

In the present work, Ti thin films were deposited on Si substrate using DC sputtering technique. Indigenous hot cathode arc discharge plasma system was used for nitriding over these samples, where the plasma parameters and work piece can be controlled independently. A mixture of H{sub 2} and N{sub 2} gases (in the ratio of 80:20) was supplied into the plasma chamber. The effect of bias voltage on the crystal structure, morphology and optical properties was investigated by employing various physical techniques such as X-ray Diffraction, Atomic Force Microscopy and UV-Vis spectrometry. It was found that bias voltage affects largely the crystal structure and band gap which in turn is responsible for the modifications in optical properties of the deposited films.

Plasma monitoring and PECVD process control in thin film silicon-based solar cell manufacturing

Directory of Open Access Journals (Sweden)

Gabriel Onno

2014-02-01

Full Text Available A key process in thin film silicon-based solar cell manufacturing is plasma enhanced chemical vapor deposition (PECVD of the active layers. The deposition process can be monitored in situ by plasma diagnostics. Three types of complementary diagnostics, namely optical emission spectroscopy, mass spectrometry and non-linear extended electron dynamics are applied to an industrial-type PECVD reactor. We investigated the influence of substrate and chamber wall temperature and chamber history on the PECVD process. The impact of chamber wall conditioning on the solar cell performance is demonstrated.

Thin films for precision optics

International Nuclear Information System (INIS)

Araujo, J.F.; Maurici, N.; Castro, J.C. de

1983-01-01

The technology of producing dielectric and/or metallic thin films for high precision optical components is discussed. Computer programs were developed in order to calculate and register, graphically, reflectance and transmittance spectra of multi-layer films. The technology of vacuum evaporation of several materials was implemented in our thin-films laboratory; various films for optics were then developed. The possibility of first calculate film characteristics and then produce the film is of great advantage since it reduces the time required to produce a new type of film and also reduces the cost of the project. (C.L.B.) [pt

Feasibility of Ultra-Thin Fiber-Optic Dosimeters for Radiotherapy Dosimetry.

Science.gov (United States)

Lee, Bongsoo; Kwon, Guwon; Shin, Sang Hun; Kim, Jaeseok; Yoo, Wook Jae; Ji, Young Hoon; Jang, Kyoung Won

2015-11-17

In this study, prototype ultra-thin fiber-optic dosimeters were fabricated using organic scintillators, wavelength shifting fibers, and plastic optical fibers. The sensor probes of the ultra-thin fiber-optic dosimeters consisted of very thin organic scintillators with thicknesses of 100, 150 and 200 μm. These types of sensors cannot only be used to measure skin or surface doses but also provide depth dose measurements with high spatial resolution. With the ultra-thin fiber-optic dosimeters, surface doses for gamma rays generated from a Co-60 therapy machine were measured. Additionally, percentage depth doses in the build-up regions were obtained by using the ultra-thin fiber-optic dosimeters, and the results were compared with those of external beam therapy films and a conventional fiber-optic dosimeter.

Wettability, optical properties and molecular structure of plasma polymerized diethylene glycol dimethyl ether

Energy Technology Data Exchange (ETDEWEB)

Azevedo, T C A M; Algatti, M A; Mota, R P; Honda, R Y; Kayama, M E; Kostov, K G; Fernandes, R S [FEG-DFQ-UNESP, Av. Ariberto Pereira da Cunha 333, 12516-410 - Guaratingueta, SP (Brazil); Cruz, N C; Rangel, E C, E-mail: algatti@feg.unesp.b [UNESP, Avenida Tres de Marco, 511, 18087-180 Sorocaba, SP (Brazil)

2009-05-01

Modern industry has frequently employed ethylene glycol ethers as monomers in plasma polymerization process to produce different types of coatings. In this work we used a stainless steel plasma reactor to grow thin polymeric films from low pressure RF excited plasma of diethylene glycol dimethyl ether. Plasmas were generated at 5W RF power in the range of 16 Pa to 60 Pa. The molecular structure of plasma polymerized films and their optical properties were analyzed by Fourier Transform Infrared Spectroscopy (FTIR) and Ultraviolet-Visible Spectroscopy, respectively. The IR spectra show C-H stretching at 3000-2900 cm{sup -1}, C=O stretching at 1730-1650 cm{sup -1}, C-H bending at 1440-1380 cm{sup -1}, C-O and C-O-C stretching at 1200-1000 cm{sup -1}. The refraction index was around 1.5 and the optical gap calculated from absorption coefficient presented value near 3.8 eV. Water contact angle of the films ranged from 40 deg. to 35 deg. with corresponding surface energy from 66 to 73x10{sup -7} J. Because of its favorable optical and hydrophilic characteristics these films can be used in ophthalmic industries as glass lenses coatings.

Plasma synthesis of rare earth doped integrated optical waveguides

Energy Technology Data Exchange (ETDEWEB)

Raoux, S.; Anders, S.; Yu, K.M.; Brown, I.G. [Lawrence Berkeley Lab., CA (United States); Ivanov, I.C. [Charles Evans & Associates, Redwood City, CA (United States)

1995-03-01

We describe a novel means for the production of optically active planar waveguides. The makes use of a low energy plasma deposition. Cathodic-arc-produced metal plasmas the metallic components of the films and gases are added to form compound films. Here we discuss the synthesis of Al{sub 2{minus}x}ER{sub x}O{sub 3} thin films. The erbium concentration (x) can vary from 0 to 100% and the thickness of the film can be from Angstroms to microns. In such material, at high active center concentration (x=l% to 20%), erbium ions give rise to room temperature 1.53{mu}m emission which has minimum loss in silica-based optical fibers. With this technique, multilayer integrated planar waveguide structures can be grown, such as Al{sub 2}O{sub 3}/Al{sub 2{minus}x}Er{sub x}O{sub 3}/Al{sub 2}O{sub 3}/Si, for example.

Fast Industrial Inspection of Optical Thin Film Using Optical Coherence Tomography

Directory of Open Access Journals (Sweden)

Muhammad Faizan Shirazi

2016-09-01

Full Text Available An application of spectral domain optical coherence tomography (SD-OCT was demonstrated for a fast industrial inspection of an optical thin film panel. An optical thin film sample similar to a liquid crystal display (LCD panel was examined. Two identical SD-OCT systems were utilized for parallel scanning of a complete sample in half time. Dual OCT inspection heads were utilized for transverse (fast scanning, while a stable linear motorized translational stage was used for lateral (slow scanning. The cross-sectional and volumetric images of an optical thin film sample were acquired to detect the defects in glass and other layers that are difficult to observe using visual inspection methods. The rapid inspection enabled by this setup led to the early detection of product defects on the manufacturing line, resulting in a significant improvement in the quality assurance of industrial products.

Optical orientation of atoms in plasma

Energy Technology Data Exchange (ETDEWEB)

Zhitnikov, R

1979-06-01

The results are summed up of experimental work on the optical orientation of atoms in a plasma conducted by the Atomic Radiospectroscopy Group at the AN SSSR Physical Technology Institute. The main methods of forming and observing the optical orientation of atoms in a helium plasma and an alkali metal plasma are described in detail. A quantum mechanical explanation is given of all observed phenomena. The most significant results include the discovery of the effect of the optical orientation of atoms in a plasma on the plasma optical and electrical properties, such as electric conductivity, emitted light intensity, ionization degree, and electron density. The phenomenon applies generally and is inherent to plasmas of different chemical compositions, at the optical orientation of atoms of different elements. The methods are indicated of the practical application of the phenomenon in designing principally new precision quantum magnetometers.

Optical orientation of atoms in plasma

International Nuclear Information System (INIS)

Zhitnikov, R.

1979-01-01

The results are summed up of experimental work on the optical orientation of atoms in a plasma conducted by the Atomic Radiospectroscopy Group at the AN SSSR Physical Technology Institute. The main methods of forming and observing the optical orientation of atoms in a helium plasma and an alkali metal plasma are described in detail. A quantum mechanical explanation is given of all observed phenomena. The most significant results include the discovery of the effect of the optical orientation of atoms in a plasma on the plasma optical and electrical properties, such as electric conductivity, emitted light intensity, ionization degree, and electron density. The phenomenon applies generally and is inherent to plasmas of different chemical compositions, at the optical orientation of atoms of different elements. The methods are indicated of the practical application of the phenomenon in designing principally new precision quantum magnetometers. (J.U.)

Two-dimensional models for the optical response of thin films

Science.gov (United States)

Li, Yilei; Heinz, Tony F.

2018-04-01

In this work, we present a systematic study of 2D optical models for the response of thin layers of material under excitation by normally incident light. The treatment, within the framework of classical optics, analyzes a thin film supported by a semi-infinite substrate, with both the thin layer and the substrate assumed to exhibit local, isotropic linear response. Starting from the conventional three-dimensional (3D) slab model of the system, we derive a two-dimensional (2D) sheet model for the thin film in which the optical response is described by a sheet optical conductivity. We develop criteria for the applicability of this 2D sheet model for a layer with an optical thickness far smaller than the wavelength of the light. We examine in detail atomically thin semi-metallic and semiconductor van-der-Waals layers and ultrathin metal films as representative examples. Excellent agreement of the 2D sheet model with the 3D slab model is demonstrated over a broad spectral range from the radio frequency limit to the near ultraviolet. A linearized version of system response for the 2D model is also presented for the case where the influence of the optically thin layer is sufficiently weak. Analytical expressions for the applicability and accuracy of the different optical models are derived, and the appropriateness of the linearized treatment for the materials is considered. We discuss the advantages, as well as limitations, of these models for the purpose of deducing the optical response function of the thin layer from experiment. We generalize the theory to take into account in-plane anisotropy, layered thin film structures, and more general substrates. Implications of the 2D model for the transmission of light by the thin film and for the implementation of half- and totally absorbing layers are discussed.

A new lithography of functional plasma polymerized thin films

International Nuclear Information System (INIS)

Kim, Sung-O

2001-01-01

The preparation of the resist for the vacuum lithography was carried out by plasma polymerization. The resist manufactured by plasma polymerization is a monomer produced by MMA (Methyl methacrylate). The functional groups of MMA appeared in the PPMMA (Plasma Polymerized Methyl methacrylate) as well, and this was confirmed through an analysis using FT-IR. The polymerization rate increased as a function of the plasma power and decreased as a function of the system pressure. The sensitivity and contrast of the plasma polymerized thin films were 15 μC/cm2 and 4.3 respectively. The size of the pattern manufactured by Vacuum Lithography using the plasma polymerized thin films was 100 nm

Modification of optical and electrical properties of chemical bath deposited SnS using O{sub 2} plasma treatments

Energy Technology Data Exchange (ETDEWEB)

Gómez, A. [Facultad de Ciencias, Universidad Autónoma del Estado de México, Estado de México, México (Mexico); Martínez, H., E-mail: hm@fis.unam.mx [Instituto de Ciencias Fisicas, Universidad Nacional Autónoma de México, Apartado Postal 48-3, 62251, Cuernavaca, Morelos (Mexico); Calixto-Rodríguez, M. [Centro de Investigación en Energía, Universidad Autónoma del Estado de México, Estado de México, México (Mexico); Avellaneda, D. [Facultad de Ingeniería Mecánica y Eléctrica, Universidad Autónoma de Nuevo León, México (Mexico); Reyes, P.G. [Facultad de Ciencias, Universidad Autónoma del Estado de México, Estado de México, México (Mexico); Flores, O. [Instituto de Ciencias Fisicas, Universidad Nacional Autónoma de México, Apartado Postal 48-3, 62251, Cuernavaca, Morelos (Mexico)

2013-06-15

In this paper, we report modifications of structural and optical, electrical properties that occur in tin sulphide (SnS) treated in O{sub 2} plasma. The SnS thin films were deposited by chemical bath deposition technique. The samples were treated in an O{sub 2} plasma discharge at 3 Torr of pressure discharge, a discharge voltage of 2.5 kV and 20 mA of discharge current. The prepared and treated thin films were characterized by X-ray diffraction, scanning electron microscopy and energy dispersive X-ray analysis. The photoconductivity and electrical effects of SnS have been studied. The SnS thin films had an orthorhombic crystalline structure. With the plasma treatment the optical gap and electrical properties of the SnS films changed from 1.61 to 1.84 eV, for 3.9 × 10{sup 5} to 10.42 Ω cm, respectively. These changes can be attributed to an increase in electron density, percolation effects due to porosity, surface degradation/etching that is an increase in surface roughness, where some structural changes related to crystallinity occurs like a high grain size as revealed by SEM images.

Optical thin film deposition

International Nuclear Information System (INIS)

Macleod, H.A.

1979-01-01

The potential usefulness in the production of optical thin-film coatings of some of the processes for thin film deposition which can be classified under the heading of ion-assisted techniques is examined. Thermal evaporation is the process which is virtually universally used for this purpose and which has been developed to a stage where performance is in almost all respects high. Areas where further improvements would be of value, and the possibility that ion-assisted deposition might lead to such improvements, are discussed. (author)

Tunable thin-film optical filters for hyperspectral microscopy

Science.gov (United States)

Favreau, Peter F.; Rich, Thomas C.; Prabhat, Prashant; Leavesley, Silas J.

2013-02-01

Hyperspectral imaging was originally developed for use in remote sensing applications. More recently, it has been applied to biological imaging systems, such as fluorescence microscopes. The ability to distinguish molecules based on spectral differences has been especially advantageous for identifying fluorophores in highly autofluorescent tissues. A key component of hyperspectral imaging systems is wavelength filtering. Each filtering technology used for hyperspectral imaging has corresponding advantages and disadvantages. Recently, a new optical filtering technology has been developed that uses multi-layered thin-film optical filters that can be rotated, with respect to incident light, to control the center wavelength of the pass-band. Compared to the majority of tunable filter technologies, these filters have superior optical performance including greater than 90% transmission, steep spectral edges and high out-of-band blocking. Hence, tunable thin-film optical filters present optical characteristics that may make them well-suited for many biological spectral imaging applications. An array of tunable thin-film filters was implemented on an inverted fluorescence microscope (TE 2000, Nikon Instruments) to cover the full visible wavelength range. Images of a previously published model, GFP-expressing endothelial cells in the lung, were acquired using a charge-coupled device camera (Rolera EM-C2, Q-Imaging). This model sample presents fluorescently-labeled cells in a highly autofluorescent environment. Linear unmixing of hyperspectral images indicates that thin-film tunable filters provide equivalent spectral discrimination to our previous acousto-optic tunable filter-based approach, with increased signal-to-noise characteristics. Hence, tunable multi-layered thin film optical filters may provide greatly improved spectral filtering characteristics and therefore enable wider acceptance of hyperspectral widefield microscopy.

ZnO and Al doped ZnO thin films deposited by Spray Plasma: Effect of the growth time and Al doping on microstructural, optical and electrical properties

International Nuclear Information System (INIS)

Baba, Kamal; Lazzaroni, Claudia; Nikravech, Mehrdad

2015-01-01

Nanostructured zinc oxide (ZnO) and Al doped ZnO (ZnO:Al) thin films are deposited on glass substrate by the Spray Plasma technique. Zinc nitrate and aluminium nitrate are used as Zn and Al precursors, respectively. The effect of the growth time on structural and optical properties of undoped films is studied by X-ray diffraction, atomic force microscopy, and UV–Vis spectroscopy. The effect of Al doping on microstructural, optical and electrical characteristics of ZnO:Al films is also investigated. The results show that the grain size and the film thickness both increase with the growth time. The band gap of the layers varies from 3.17 to 3.24 eV depending on the thickness. The increase of the Al doping results in the enlargement of the peak (002) and the shift of its position to higher 2θ values. Average optical transmittance decreases from 90 to 65% with the growth time because of the thickness increase while there is no significant influence of the aluminium doping on the transmittance which is above 80% in most of the visible and near-IR range for all ZnO:Al films. The electrical properties characterized by Hall measurements show that all the deposited films exhibit high resistivity, between 4 and 10 4 Ω cm. The carrier concentration decreases from 2.10 19 to 2.10 13 cm −3 when the concentration of Al increases from 1.5 to 5 atm%. - Highlights: • The original Spray Plasma technique is used for ZnO and ZnO:Al thin film deposition. • Investigation of the effect of growth time and Al doping on the structural and optical properties • Increase of grain size and film thickness with the growth time • Optical transmittance decreases from 90 to 65% with the growth time and is above 80% for ZnO:Al films in UV–Vis-NIR range. • The peak position of the (002) plane is shifted to high 2θ values with Al doping.

Effects of O2 plasma post-treatment on ZnO: Ga thin films grown by H2O-thermal ALD

Science.gov (United States)

Lee, Yueh-Lin; Chuang, Jia-Hao; Huang, Tzu-Hsuan; Ho, Chong-Long; Wu, Meng-Chyi

2013-03-01

Transparent conducting oxides have been widely employed in optoelectronic devices using the various deposition methods such as sputtering, thermal evaporator, and e-gun evaporator technologies.1-3 In this work, gallium doped zinc oxide (ZnO:Ga) thin films were grown on glass substrates via H2O-thermal atomic layer deposition (ALD) at different deposition temperatures. ALD-GZO thin films were constituted as a layer-by-layer structure by stacking zinc oxides and gallium oxides. Diethylzinc (DEZ), triethylgallium (TEG) and H2O were used as zinc, gallium precursors and oxygen source, respectively. Furthermore, we investigated the influences of O2 plasma post-treatment power on the surface morphology, electrical and optical property of ZnO:Ga films. As the result of O2 plasma post-treatment, the characteristics of ZnO:Ga films exhibit a smooth surface, low resistivity, high carrier concentration, and high optical transmittance in the visible spectrum. However, the transmittance decreases with O2 plasma power in the near- and mid-infrared regions.

Remote plasma sputtering of indium tin oxide thin films for large area flexible electronics

International Nuclear Information System (INIS)

Yeadon, A.D.; Wakeham, S.J.; Brown, H.L.; Thwaites, M.J.; Whiting, M.J.; Baker, M.A.

2011-01-01

Indium tin oxide (ITO) thin films with a specific resistivity of 3.5 × 10 −4 Ω cm and average visible light transmission (VLT) of 90% have been reactively sputtered onto A4 Polyethylene terephthalate (PET), glass and silicon substrates using a remote plasma sputtering system. This system offers independent control of the plasma density and the target power enabling the effect of the plasma on ITO properties to be studied. Characterization of ITO on glass and silicon has shown that increasing the plasma density gives rise to a decrease in the specific resistivity and an increase in the optical band gap of the ITO films. Samples deposited at plasma powers of 1.5 kW, 2.0 kW and 2.5 kW and optimized oxygen flow rates exhibited specific resistivity values of 3.8 × 10 −4 Ω cm, 3.7 × 10 −4 Ω cm and 3.5 × 10 −4 Ω cm and optical gaps of 3.48 eV, 3.51 eV and 3.78 eV respectively. The increase in plasma density also influenced the crystalline texture and the VLT increased from 70 to 95%, indicating that more oxygen is being incorporated into the growing film. It has been shown that the remote plasma sputter technique can be used in an in-line process to produce uniform ITO coatings on PET with specific resistivities of between 3.5 × 10 −4 and 4.5 × 10 −4 Ω cm and optical transmission of greater than 85% over substrate widths of up to 30 cm.

A comparative study of the physical properties of Sb2S3 thin films treated with N2 AC plasma and thermal annealing in N2

International Nuclear Information System (INIS)

Calixto-Rodriguez, M.; Martinez, H.; Pena, Y.; Flores, O.; Esparza-Ponce, H.E.; Sanchez-Juarez, A.; Campos-Alvarez, J.; Reyes, P.

2010-01-01

As-deposited antimony sulfide thin films prepared by chemical bath deposition were treated with nitrogen AC plasma and thermal annealing in nitrogen atmosphere. The as-deposited, plasma treated, and thermally annealed antimony sulfide thin films have been characterized by X-ray diffraction (XRD), energy dispersive X-ray spectroscopy, scanning electron microscopy, atomic force microscopy, UV-vis spectroscopy, and electrical measurements. The results have shown that post-deposition treatments modify the crystalline structure, the morphology, and the optoelectronic properties of Sb 2 S 3 thin films. X-ray diffraction studies showed that the crystallinity of the films was improved in both cases. Atomic force microscopy studies showed that the change in the film morphology depends on the post-deposition treatment used. Optical emission spectroscopy (OES) analysis revealed the plasma etching on the surface of the film, this fact was corroborated by the energy dispersive X-ray spectroscopy analysis. The optical band gap of the films (E g ) decreased after post-deposition treatments (from 2.36 to 1.75 eV) due to the improvement in the grain sizes. The electrical resistivity of the Sb 2 S 3 thin films decreased from 10 8 to 10 6 Ω-cm after plasma treatments.

Optical plasma torch electron bunch generation in plasma wakefield accelerators

Directory of Open Access Journals (Sweden)

G. Wittig

2015-08-01

Full Text Available A novel, flexible method of witness electron bunch generation in plasma wakefield accelerators is described. A quasistationary plasma region is ignited by a focused laser pulse prior to the arrival of the plasma wave. This localized, shapeable optical plasma torch causes a strong distortion of the plasma blowout during passage of the electron driver bunch, leading to collective alteration of plasma electron trajectories and to controlled injection. This optically steered injection is more flexible and faster when compared to hydrodynamically controlled gas density transition injection methods.

Silicon-integrated thin-film structure for electro-optic applications

Science.gov (United States)

McKee, Rodney A.; Walker, Frederick Joseph

2000-01-01

A crystalline thin-film structure suited for use in any of an number of electro-optic applications, such as a phase modulator or a component of an interferometer, includes a semiconductor substrate of silicon and a ferroelectric, optically-clear thin film of the perovskite BaTiO.sub.3 overlying the surface of the silicon substrate. The BaTiO.sub.3 thin film is characterized in that substantially all of the dipole moments associated with the ferroelectric film are arranged substantially parallel to the surface of the substrate to enhance the electro-optic qualities of the film.

Plasma Processing of Metallic and Semiconductor Thin Films in the Fisk Plasma Source

Science.gov (United States)

Lampkin, Gregory; Thomas, Edward, Jr.; Watson, Michael; Wallace, Kent; Chen, Henry; Burger, Arnold

1998-01-01

The use of plasmas to process materials has become widespread throughout the semiconductor industry. Plasmas are used to modify the morphology and chemistry of surfaces. We report on initial plasma processing experiments using the Fisk Plasma Source. Metallic and semiconductor thin films deposited on a silicon substrate have been exposed to argon plasmas. Results of microscopy and chemical analyses of processed materials are presented.

Utilizing the ratio and the summation of two spectral lines for estimation of optical depth: Focus on thick plasmas

Science.gov (United States)

Rezaei, Fatemeh; Tavassoli, Seyed Hassan

2016-11-01

In this paper, a study is performed on the spectral lines of plasma radiations created from focusing of the Nd:YAG laser on Al standard alloys at atmospheric air pressure. A new theoretical method is presented to investigate the evolution of the optical depth of the plasma based on the radiative transfer equation, in LTE condition. This work relies on the Boltzmann distribution, lines broadening equations, and as well as the self-absorption relation. Then, an experimental set-up is devised to extract some of plasma parameters such as temperature from modified line ratio analysis, electron density from Stark broadening mechanism, line intensities of two spectral lines in the same order of ionization from similar species, and the plasma length from the shadowgraphy section. In this method, the summation and the ratio of two spectral lines are considered for evaluation of the temporal variations of the plasma parameters in a LIBS homogeneous plasma. The main advantage of this method is that it comprises the both of thin and thick laser induced plasmas without straight calculation of self-absorption coefficient. Moreover, the presented model can also be utilized for evaluation the transition of plasma from the thin condition to the thick one. The results illustrated that by measuring the line intensities of two spectral lines at different evolution times, the plasma cooling and the growth of the optical depth can be followed.

Properties of thin films deposited from HMDSO/O2 induced remote plasma: Effect of oxygen fraction

International Nuclear Information System (INIS)

Saloum, S.; Naddaf, M.; Al-Khaled, B.

2008-01-01

Thin films deposited from hexamethyle disiloxane (HMDSO)/O 2 mixture excited in a radio-frequency hollow cathode discharge system have been investigated for their structural, optical and corrosive properties as a function of oxygen fraction χo 2 (χo 2 =0, 0.38, 0.61, 0.76 and 0.90). It is found that the effect of oxygen fraction on films properties is related to O 2 dissociation degree (αd) behavior in pure oxygen plasma. αd has been investigated by actinometry optical emission spectroscopy (AOES) combined with double langmuir probe measurements, a maximum of O 2 dissociation degree of 15% has been obtained for 50 sccm flow rate of O 2 (χo 2 =0.61 in HMDSO/O 2 plasma). Fourier transform infrared spectroscopy (FTIR) and optical measurements showed that the behavior of both identified IR group densities and deposition rate as a function of oxygen fraction is similar to that of O 2 dissociation degree. The inorganic nature of the films depends significantly on oxygen fraction, the best inorganic structure of deposited films has been obtained for 62% HMDSO content in the mixture HMDSO/O 2 (χo 2 =0.38). The refractive index for deposited films from pure HMDSO(χo 2 =0) has been found to be higher than that of films deposited from HMDSO/O 2 mixture. In HMDSO/O 2 plasma, it has a behavior similar to that of deposition rate, and it is comparable to that of quartz. The effect of oxygen fraction on the corrosive properties of thin films deposited on steel has been investigated. It is found that the measured corrosion current density in 0.1 M KCI solution decreases with the addition of O 2 to HMDSO plasma, and it is minimum for χo 2 =0.38. (author)

Optical Instruments Synergy in Determination of Optical Depth of Thin Clouds

Energy Technology Data Exchange (ETDEWEB)

Vladutescu, Daniela V.; Schwartz, Stephen E.

2017-06-25

Optically thin clouds have a strong radiative effect and need to be represented accurately in climate models. Cloud optical depth of thin clouds was retrieved using high resolution digital photography, lidar, and a radiative transfer model. The Doppler Lidar was operated at 1.5 μm, minimizing return from Rayleigh scattering, emphasizing return from aerosols and clouds. This approach examined cloud structure on scales 3 to 5 orders of magnitude finer than satellite products, opening new avenues for examination of cloud structure and evolution.

Type of precursor and synthesis of silicon oxycarbide (SiOxCyH) thin films with a surfatron microwave oxygen/argon plasma

International Nuclear Information System (INIS)

Walkiewicz-Pietrzykowska, Agnieszka; Espinos, J. P.; Gonzalez-Elipe, Agustin R.

2006-01-01

Siliconelike thin films (i.e., SiO x C y H z ) were prepared in a microwave plasma enhanced chemical vapor deposition reactor from structurally different organosilicon precursors [i.e., hexamethyldisiloxane (HMDSO), dimethylsilane (DMS), and tetramethylsilane (TMS)]. The films were deposited at room temperature by using different oxygen/argon ratios in the plasma gas. By changing the type of precursor and the relative concentration of oxygen in the plasma, thin films with different compositions (i.e., O/C ratio) and properties are obtained. In general, raising the oxygen concentration in the plasma produces the progressive removal of the organic moieties from the films whose composition and structure then approach those of silicon dioxide. The deposition rate was highly dependent on the type of precursor, following the order HMDSO>>DMS>TMS. The polarizabilities, optical band gaps, and surface free energy of the films also depended on the thin film composition and structure. It is proposed that the Si-O bonds existing in HMDSO is the main factor controlling the distinct reactivity of this precursor and is also responsible for the different compositions and properties of the SiO x C y H z thin films prepared with very low or no oxygen in the plasma gas

Effects of in situ plasma treatment on optical and electrical properties of index-matched transparent conducting oxide layer

International Nuclear Information System (INIS)

Lim, Yong Hwan; Yoo, Hana; Choi, Bum Ho; Kim, Young Baek; Lee, Jong Ho; Shin, Dong Chan

2010-01-01

We investigated the effects of in situ plasma-treatment on optical and electrical properties of index-matched indium tin oxide (IMITO) thin film. To render the IMITO-coated surface hydrophilic and study the optical and electrical characteristics, we performed in situ oxygen plasma post-treatment without breaking vacuum. The 94.6% transmittance in the visible wavelength range (400-700 nm) increased on average to 96.4% and the maximum transmittance reached 98% over a broad wavelength range. The surface roughness and sheet resistance improved from 0.9 nm and 200 Ω/sq to 0.0905 nm and 100 Ω/sq, respectively, by in situ plasma post-treatment. We confirmed by contact angle measurement that the hydrophobic IMITO surface was altered to hydrophilic. The improved optical and electrical characteristics of in situ plasma-treated IMITO makes it adequate for high-resolution liquid crystal on silicon displays.

On the Nature and Extent of Optically Thin Marine low Clouds

Science.gov (United States)

Leahy, L. V.; Wood, R.; Charlson, R. J.; Hostetler, C. A.; Rogers, R. R.; Vaughan, M. A.; Winker, D. M.

2012-01-01

Macrophysical properties of optically thin marine low clouds over the nonpolar oceans (60 deg S-60 deg N) are measured using 2 years of full-resolution nighttime data from the Cloud-Aerosol Lidar with Orthogonal Polarization (CALIOP). Optically thin clouds, defined as the subset of marine low clouds that do not fully attenuate the lidar signal, comprise almost half of the low clouds over the marine domain. Regionally, the fraction of low clouds that are optically thin (f(sub thin,cld)) exhibits a strong inverse relationship with the low-cloud cover, with maxima in the tropical trades (f(sub thin,cld) greater than 0.8) and minima in regions of persistent marine stratocumulus and in midlatitudes (f(sub thin,cld) less than 0.3). Domain-wide, a power law fit describes the cloud length distribution, with exponent beta = 2.03 +/- 0.06 (+/-95% confidence interval). On average, the fraction of a cloud that is optically thin decreases from approximately 1 for clouds smaller than 2 km to less than 0.3 for clouds larger than 30 km. This relationship is found to be independent of region, so that geographical variations in the cloud length distribution explain three quarters of the variance in f(sub thin,cld). Comparing collocated trade cumulus observations from CALIOP and the airborne High Spectral Resolution Lidar reveals that clouds with lengths smaller than are resolvable with CALIOP contribute approximately half of the low clouds in the region sampled. A bounded cascade model is constructed to match the observations from the trades. The model shows that the observed optically thin cloud behavior is consistent with a power law scaling of cloud optical depth and suggests that most optically thin clouds only partially fill the CALIOP footprint.

Development of plasma bolometers using fiber-optic temperature sensors

Energy Technology Data Exchange (ETDEWEB)

Reinke, M. L., E-mail: reinkeml@ornl.gov [Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831 (United States); Han, M.; Liu, G. [University of Nebraska-Lincoln, Lincoln, Nebraska 68588 (United States); Eden, G. G. van [Dutch Institute for Fundamental Energy Research, De Zaale 20, 5612 AJ Eindhoven (Netherlands); Evenblij, R.; Haverdings, M. [Technobis, Pyrietstraat 2, 1812 SC Alkmaar (Netherlands); Stratton, B. C. [Princeton Plasma Physics Laboratory, P.O. Box 451, Princeton, New Jersey 08543 (United States)

2016-11-15

Measurements of radiated power in magnetically confined plasmas are important for exhaust studies in present experiments and expected to be a critical diagnostic for future fusion reactors. Resistive bolometer sensors have long been utilized in tokamaks and helical devices but suffer from electromagnetic interference (EMI). Results are shown from initial testing of a new bolometer concept based on fiber-optic temperature sensor technology. A small, 80 μm diameter, 200 μm long silicon pillar attached to the end of a single mode fiber-optic cable acts as a Fabry–Pérot cavity when broadband light, λ{sub o} ∼ 1550 nm, is transmitted along the fiber. Changes in temperature alter the optical path length of the cavity primarily through the thermo-optic effect, resulting in a shift of fringes reflected from the pillar detected using an I-MON 512 OEM spectrometer. While initially designed for use in liquids, this sensor has ideal properties for use as a plasma bolometer: a time constant, in air, of ∼150 ms, strong absorption in the spectral range of plasma emission, immunity to local EMI, and the ability to measure changes in temperature remotely. Its compact design offers unique opportunities for integration into the vacuum environment in places unsuitable for a resistive bolometer. Using a variable focus 5 mW, 405 nm, modulating laser, the signal to noise ratio versus power density of various bolometer technologies are directly compared, estimating the noise equivalent power density (NEPD). Present tests show the fiber-optic bolometer to have NEPD of 5-10 W/m{sup 2} when compared to those of the resistive bolometer which can achieve <0.5 W/m{sup 2} in the laboratory, but this can degrade to 1-2 W/m{sup 2} or worse when installed on a tokamak. Concepts are discussed to improve the signal to noise ratio of this new fiber-optic bolometer by reducing the pillar height and adding thin metallic coatings, along with improving the spectral resolution of the interrogator.

Optical characterizations of silver nanoprisms embedded in polymer thin film layers

Science.gov (United States)

Carlberg, Miriam; Pourcin, Florent; Margeat, Olivier; Le Rouzo, Judikael; Berginc, Gerard; Sauvage, Rose-Marie; Ackermann, Jorg; Escoubas, Ludovic

2017-10-01

The precise control of light-matter interaction has a wide range of applications and is currently driven by the use of nanoparticles (NPs) by the recent advances in nanotechnology. Taking advantage of the material, size, shape, and surrounding media dependence of the optical properties of plasmonic NPs, thin film layers with tunable optical properties are achieved. The NPs are synthesized by wet chemistry and embedded in a polyvinylpyrrolidone (PVP) polymer thin film layer. Spectrophotometer and spectroscopic ellipsometry measurements are coupled to finite-difference time domain numerical modeling to optically characterize the heterogeneous thin film layers. Silver nanoprisms of 10 to 50 nm edge size exhibit high absorption through the visible wavelength range. A simple optical model composed of a Cauchy law and a Lorentz law, accounting for the optical properties of the nonabsorbing polymer and the absorbing property of the nanoprisms, fits the spectroscopic ellipsometry measurements. Knowing the complex optical indices of heterogeneous thin film layers let us design layers of any optical properties.

Process control by optical emission spectroscopy during growth of a-C:H from a CH₄ plasma by plasma-enhanced chemical vapour deposition

DEFF Research Database (Denmark)

Barholm-Hansen, C; Bentzon, MD; Vigild, Martin Etchells

1994-01-01

During the growth of a-C:H thin films for tribological applications, the characteristic optical emission from a CH4 plasma was used to estimate growth conditions such as the degree of dissociation of the feed gas, the deposition rate and the presence of impurities. Films were fabricated with vari...

Immobilization and controlled release of drug using plasma polymerized thin film

Energy Technology Data Exchange (ETDEWEB)

Myung, Sung-Woon [Department of Dental Materials, School of Dentistry, MRC Center, Chosun University, 309 Pilmun-daero, Dong-gu, Gwangju (Korea, Republic of); Jung, Sang-Chul [Department of Environmental Engineering, Sunchon National University, Sunchon 540-742 (Korea, Republic of); Kim, Byung-Hoon, E-mail: kim5055@chosun.ac.kr [Department of Dental Materials, School of Dentistry, MRC Center, Chosun University, 309 Pilmun-daero, Dong-gu, Gwangju (Korea, Republic of)

2015-06-01

In this study, plasma polymerization of acrylic acid was employed to immobilize drug and control its release. Doxorubicin (DOX) was immobilized covalently on the glass surface deposited with plasma polymerized acrylic acid (PPAAc) thin film containing the carboxylic group. At first, the PPAAc thin film was coated on a glass surface at a pressure of 1.33 Pa and radio frequency (RF) discharge power of 20 W for 10 min. DOX was immobilized on the PPAAc deposition in a two environment of phosphate buffer saline (PBS) and dimethyl sulfoxide (DMSO) solutions. The DOX immobilized surface was characterized by scanning electron microscope, atomic force microscope and attenuated total reflection Fourier transform infrared spectroscopy. The DOX molecules were more immobilized in PBS than DMSO solution. The different immobilization and release profiles of DOX result from the solubility of hydrophobic DOX in aqueous and organic solutions. Second, in order to control the release of the drug, PPAAc thin film was covered over DOX dispersed layer. Different thicknesses and cross-linked PPAAc thin films by adjusting deposition time and RF discharge power were covered on the DOX layer dispersed. PPAAc thin film coated DOX layer reduced the release rate of DOX. The thickness control of plasma deposition allows controlling the release rate of drug. - Highlights: • Doxorubicin was immobilized on the surface of plasma polymerized acrylic acid thin film. • Release profile of doxorubicin was affected by aqueous and organic solutions. • Plasma polymerized acrylic acid thin film can be used to achieve controlled release.

Immobilization and controlled release of drug using plasma polymerized thin film

International Nuclear Information System (INIS)

Myung, Sung-Woon; Jung, Sang-Chul; Kim, Byung-Hoon

2015-01-01

In this study, plasma polymerization of acrylic acid was employed to immobilize drug and control its release. Doxorubicin (DOX) was immobilized covalently on the glass surface deposited with plasma polymerized acrylic acid (PPAAc) thin film containing the carboxylic group. At first, the PPAAc thin film was coated on a glass surface at a pressure of 1.33 Pa and radio frequency (RF) discharge power of 20 W for 10 min. DOX was immobilized on the PPAAc deposition in a two environment of phosphate buffer saline (PBS) and dimethyl sulfoxide (DMSO) solutions. The DOX immobilized surface was characterized by scanning electron microscope, atomic force microscope and attenuated total reflection Fourier transform infrared spectroscopy. The DOX molecules were more immobilized in PBS than DMSO solution. The different immobilization and release profiles of DOX result from the solubility of hydrophobic DOX in aqueous and organic solutions. Second, in order to control the release of the drug, PPAAc thin film was covered over DOX dispersed layer. Different thicknesses and cross-linked PPAAc thin films by adjusting deposition time and RF discharge power were covered on the DOX layer dispersed. PPAAc thin film coated DOX layer reduced the release rate of DOX. The thickness control of plasma deposition allows controlling the release rate of drug. - Highlights: • Doxorubicin was immobilized on the surface of plasma polymerized acrylic acid thin film. • Release profile of doxorubicin was affected by aqueous and organic solutions. • Plasma polymerized acrylic acid thin film can be used to achieve controlled release

Characteristics of indirect laser-induced plasma from a thin film of oil on a metallic substrate

Science.gov (United States)

Xiu, Jun-Shan; Bai, Xue-Shi; Motto-Ros, Vincent; Yu, Jin

2015-04-01

Optical emissions from the major and trace elements embodied in a transparent gel prepared from cooking oil were detected after the gel was spread in a thin film on a metallic substrate. Such emissions are due to the indirect breakdown of the coating layer. The generated plasma, a mixture of substances from the substrate, the layer, and the ambient gas, was characterized using emission spectroscopy. The characteristics of the plasma formed on the metal with and without the coating layer were investigated. The results showed that Al emission induced from the aluminum substrates coated with oil films extends away from the target surface to ablate the oil film. This finally formed a bifurcating circulation of aluminum vapor against a spherical confinement wall in the front of the plume, which differed from the evolution of the plasma induced from the uncoated aluminum target. The strongest emissions of elements from the oil films can be observed at 2 mm above the target after a detection delay of 1.0 μs. A high temperature zone has been observed in the plasma after the delay of 1.0 μs for the plasma induced from the coated metal. This higher temperature determined in the plasma allows the consideration of the sensitive detection of trace elements in liquids, gels, biological samples, or thin films.

Structure and properties of optical-discharge plasma in CO2-laser beam near target surface

Science.gov (United States)

Danshchikov, Ye. V.; Dymshakov, V. A.; Lebedev, F. V.; Ryazanov, A. V.

1986-05-01

An experimental study of optical-discharge plasma in a CO2-laser beam at a target surface was made for the purpose of exploring the not yet understood role of this plasma in the laser-target interaction process. Such a plasma was produced by means of a quasi-continuous CO2-laser with an unstable resonator, its power being maintained constant for 1 ms periods. Its radiation was focused on the surfaces of thick and seeding thin Al, Ti, and Ta targets inclined at an approximately 70 deg. angle to the beam, inside a hermetic chamber containing air, argon, or helium under atmospheric pressure. The radiation intensity distribution over the focal plane and the nearest caustic surface in the laser beam was measured along with the plasma parameters, the latter by the methods of spectral analysis and photoelectric recording. The instrumentation for this purpose included an MDR-3 monochromator with an entrance slit, a double electron-optical converter, a memory oscillograph, and an SI-10-30 ribbon lamp as radiation reference standard. The results yielded integral diametral intensity distributions of the emission lines Ti-II (457.2 nm), Ti-I (464 nm), Ar-II (462 nm), radial and axial temperature profiles of optical discharge in metal vapor in surrounding gas, and the radial temperature profile of irradiated metal surface at successive instants of time. The results reveal marked differences between the structures and the properties of optical-discharge plasma in metal vapor and in surrounding gas, optical discharge in the former being characterized by localization within the laser beam and optical discharge in the latter being characterized by a drift away from the target.

Electronic and optical device applications of hollow cathode plasma assisted atomic layer deposition based GaN thin films

International Nuclear Information System (INIS)

Bolat, Sami; Tekcan, Burak; Ozgit-Akgun, Cagla; Biyikli, Necmi; Okyay, Ali Kemal

2015-01-01

Electronic and optoelectronic devices, namely, thin film transistors (TFTs) and metal–semiconductor–metal (MSM) photodetectors, based on GaN films grown by hollow cathode plasma-assisted atomic layer deposition (PA-ALD) are demonstrated. Resistivity of GaN thin films and metal-GaN contact resistance are investigated as a function of annealing temperature. Effect of the plasma gas and postmetallization annealing on the performances of the TFTs as well as the effect of the annealing on the performance of MSM photodetectors are studied. Dark current to voltage and responsivity behavior of MSM devices are investigated as well. TFTs with the N 2 /H 2 PA-ALD based GaN channels are observed to have improved stability and transfer characteristics with respect to NH 3 PA-ALD based transistors. Dark current of the MSM photodetectors is suppressed strongly after high-temperature annealing in N 2 :H 2 ambient

Solution precursor plasma deposition of nanostructured CdS thin films

International Nuclear Information System (INIS)

Tummala, Raghavender; Guduru, Ramesh K.; Mohanty, Pravansu S.

2012-01-01

Highlights: ► Inexpensive process with capability to produce large scale nanostructured coatings. ► Technique can be employed to spray the coatings on any kind of substrates including polymers. ► The CdS coatings developed have good electrical conductivity and optical properties. ► Coatings possess large amount of particulate boundaries and nanostructured grains. -- Abstract: Cadmium sulfide (CdS) films are used in solar cells, sensors and microelectronics. A variety of techniques, such as vapor based techniques, wet chemical methods and spray pyrolysis are frequently employed to develop adherent CdS films. In the present study, rapid deposition of CdS thin films via plasma spray route using a solution precursor was investigated, for the first time. Solution precursor comprising cadmium chloride, thiourea and distilled water was fed into a DC plasma jet via an axial atomizer to create ultrafine droplets for instantaneous and accelerated thermal decomposition in the plasma plume. The resulting molten/semi-molten ultrafine/nanoparticles of CdS eventually propel toward the substrate to form continuous CdS films. The chemistry of the solution precursor was found to be critical in plasma pyrolysis to control the stoichiometry and composition of the films. X-ray diffraction studies confirmed hexagonal α-CdS structure. Surface morphology and microstructures were investigated to compare with other synthesis techniques in terms of process mechanism and structural features. Transmission electron microscopy studies revealed nanostructures in the atomized particulates. Optical measurements indicated a decreasing transmittance in the visible light with increasing the film thickness and band gap was calculated to be ∼2.5 eV. The electrical resistivity of the films (0.243 ± 0.188 × 10 5 Ω cm) was comparable with the literature values. These nanostructured polycrystalline CdS films could be useful in sensing and solar applications.

Solution precursor plasma deposition of nanostructured CdS thin films

Energy Technology Data Exchange (ETDEWEB)

Tummala, Raghavender [Department of Mechanical Engineering, University of Michigan, Dearborn, MI 48128 (United States); Guduru, Ramesh K., E-mail: rkguduru@umich.edu [Department of Mechanical Engineering, University of Michigan, Dearborn, MI 48128 (United States); Mohanty, Pravansu S. [Department of Mechanical Engineering, University of Michigan, Dearborn, MI 48128 (United States)

2012-03-15

Highlights: Black-Right-Pointing-Pointer Inexpensive process with capability to produce large scale nanostructured coatings. Black-Right-Pointing-Pointer Technique can be employed to spray the coatings on any kind of substrates including polymers. Black-Right-Pointing-Pointer The CdS coatings developed have good electrical conductivity and optical properties. Black-Right-Pointing-Pointer Coatings possess large amount of particulate boundaries and nanostructured grains. -- Abstract: Cadmium sulfide (CdS) films are used in solar cells, sensors and microelectronics. A variety of techniques, such as vapor based techniques, wet chemical methods and spray pyrolysis are frequently employed to develop adherent CdS films. In the present study, rapid deposition of CdS thin films via plasma spray route using a solution precursor was investigated, for the first time. Solution precursor comprising cadmium chloride, thiourea and distilled water was fed into a DC plasma jet via an axial atomizer to create ultrafine droplets for instantaneous and accelerated thermal decomposition in the plasma plume. The resulting molten/semi-molten ultrafine/nanoparticles of CdS eventually propel toward the substrate to form continuous CdS films. The chemistry of the solution precursor was found to be critical in plasma pyrolysis to control the stoichiometry and composition of the films. X-ray diffraction studies confirmed hexagonal {alpha}-CdS structure. Surface morphology and microstructures were investigated to compare with other synthesis techniques in terms of process mechanism and structural features. Transmission electron microscopy studies revealed nanostructures in the atomized particulates. Optical measurements indicated a decreasing transmittance in the visible light with increasing the film thickness and band gap was calculated to be {approx}2.5 eV. The electrical resistivity of the films (0.243 {+-} 0.188 Multiplication-Sign 10{sup 5} {Omega} cm) was comparable with the literature

Optical fibres for fusion plasma diagnostics systems

International Nuclear Information System (INIS)

Brichard, B.

2005-01-01

The condition to achieve and maintain the ignition of a thermonuclear fusion plasma ignition calls for the construction of a large scale fusion reactor, namely ITER. This reactor is designed to deliver an average fusion power of 500 MW. The burning of fusion plasma at such high power level will release a tremendous amount of energy in the form of particle fluxes and ionising radiation. This energy release, primarily absorbed by the plasma facing components, can significantly degrade the performances of the plasma diagnostic equipment surrounding the machine. To ensure a correct operation of the Tokamak we need to develop highly radiation-resistance devices. In plasma diagnostic systems, optical fibre is viewed as a convenient tool to transport light from the plasma edge to the diagnostic area. Radiation affects the optical performances of the fibre mainly by the occurrence of radiation-induced absorption and luminescence. Both effects degrade the light signal used for plasma diagnostic. SCK-CEN is currently assessing radiation-resistant glasses for optical fibres and is developing the associated qualification procedure. The main objectives of this study were to increase the lifetime of optical components in high radiation background and to develop a radiation resistance optical fibre capable to operate in the radiation background of ITER

Viscoelastic optical nonlocality of doped cadmium oxide epsilon-near-zero thin films

Energy Technology Data Exchange (ETDEWEB)

Luk, Ting S.; De Ceglia, Domenico; Scalora, Michael; Vincenti, Maria A.; Campione, Salvatore; Kelley, Kyle; Maria, Jon-Paul; Keeler, Gordon A.

2017-08-01

Optical nonlocalities are elusive and hardly observable in traditional plasmonic materials like noble and alkali metals. Here we experimentally observe and theoretically model viscoelastic nonlocalities in the infrared optical response of a doped, cadmium oxide epsilon-near-zero thin film. The nonlocality is clearly detectable thanks to the low damping rate of conduction electrons and the virtual absence of interband transitions at infrared wavelengths. We describe the motion of conduction electrons using a hydrodynamic model for a viscoelastic fluid, and find excellent agreement with experimental results. The electrons’ elasticity blue-shifts the infrared plasmonic resonance associated with the main epsilon-near-zero mode, and triggers the onset of higher-order resonances due to the excitation of electron-pressure modes above the bulk plasma frequency. We also provide evidence of the existence of nonlocal damping, i.e., viscosity, in the motion of optically-excited conduction electrons using a combination of spectroscopic ellipsometry data and predictions based on the viscoelastic hydrodynamic model.

Optics and Plasma Research Department annual progress report for 2004

OpenAIRE

Bindslev, Henrik; Lynov, Jens-Peter; Pedersen, C.; Petersen, Paul Michael; Skaarup, Bitten

2005-01-01

The Optics and Plasma Research Department performs basic and applied research within three scientific programmes: (1) laser systems and optical materials, (2) optical diagnostics and information processing and (3) plasma physics and technology. Thedepartment has core competencies in optical sensors, optical materials, biophotonics, fusion plasma physics, and industrial plasma technology. The department employs key technologies in micro- and nanotechnology for optical systems, temperaturecalib...

A comparative study of the physical properties of Sb{sub 2}S{sub 3} thin films treated with N{sub 2} AC plasma and thermal annealing in N{sub 2}

Energy Technology Data Exchange (ETDEWEB)

Calixto-Rodriguez, M., E-mail: manuela@fis.unam.mx [Instituto de Ciencias Fisicas, Universidad Nacional Autonoma de Mexico, Apartado Postal 48-3, 62210, Cuernavaca, Morelos (Mexico); Martinez, H. [Instituto de Ciencias Fisicas, Universidad Nacional Autonoma de Mexico, Apartado Postal 48-3, 62210, Cuernavaca, Morelos (Mexico); Pena, Y. [Facultad de Ciencias Quimicas, Universidad Autonoma de Nuevo Leon, Pedro de Alba s/n, Cd. Universitaria, 66451, San Nicolas de los Garza, Nuevo Leon (Mexico); Flores, O. [Instituto de Ciencias Fisicas, Universidad Nacional Autonoma de Mexico, Apartado Postal 48-3, 62210, Cuernavaca, Morelos (Mexico); Esparza-Ponce, H.E. [Centro de Investigacion en Materiales Avanzados S.C., Laboratorio Nacional de Nanotecnologia, Miguel de Cervantes 120, Complejo Industrial Chihuahua, Chihuahua, Chihuahua 31109 (Mexico); Sanchez-Juarez, A.; Campos-Alvarez, J. [Centro de Investigacion en Energia, Universidad Nacional Autonoma de Mexico, Privada Xochicalco s/n, Col. Centro, 62580, Temixco, Morelos (Mexico); Reyes, P. [Facultad de Ciencias, Departamento de Fisica, Universidad Autonoma del Estado de Mexico, Instituto Literario 100, Col. Centro, 50000, Toluca, Estado de Mexico (Mexico)

2010-02-01

As-deposited antimony sulfide thin films prepared by chemical bath deposition were treated with nitrogen AC plasma and thermal annealing in nitrogen atmosphere. The as-deposited, plasma treated, and thermally annealed antimony sulfide thin films have been characterized by X-ray diffraction (XRD), energy dispersive X-ray spectroscopy, scanning electron microscopy, atomic force microscopy, UV-vis spectroscopy, and electrical measurements. The results have shown that post-deposition treatments modify the crystalline structure, the morphology, and the optoelectronic properties of Sb{sub 2}S{sub 3} thin films. X-ray diffraction studies showed that the crystallinity of the films was improved in both cases. Atomic force microscopy studies showed that the change in the film morphology depends on the post-deposition treatment used. Optical emission spectroscopy (OES) analysis revealed the plasma etching on the surface of the film, this fact was corroborated by the energy dispersive X-ray spectroscopy analysis. The optical band gap of the films (E{sub g}) decreased after post-deposition treatments (from 2.36 to 1.75 eV) due to the improvement in the grain sizes. The electrical resistivity of the Sb{sub 2}S{sub 3} thin films decreased from 10{sup 8} to 10{sup 6} {Omega}-cm after plasma treatments.

X-ray absorption spectra and emission spectra of plasmas

International Nuclear Information System (INIS)

Peng Yonglun; Yang Li; Wang Minsheng; Li Jiaming

2002-01-01

The author reports a theoretical method to calculate the resolved absorption spectra and emission spectra (optically thin) of hot dense plasmas. Due to its fully relativistic treatment incorporated with the quantum defect theory, it calculates the absorption spectra and emission spectra for single element or multi-element plasmas with little computational efforts. The calculated absorption spectra of LTE gold plasmas agree well with the experimental ones. It also calculates the optical thin emission spectra of LTE gold plasmas, which is helpful to diagnose the plasmas of relevant ICF plasmas. It can also provide the relevant parameters such as population density of various ionic stages, precise radiative properties for ICF studies

Thin Film Magnetless Faraday Rotators for Compact Heterogeneous Integrated Optical Isolators (Postprint)

Science.gov (United States)

2017-06-15

AFRL-RX-WP-JA-2017-0348 THIN-FILM MAGNETLESS FARADAY ROTATORS FOR COMPACT HETEROGENEOUS INTEGRATED OPTICAL ISOLATORS (POSTPRINT) Dolendra Karki...Interim 9 May 2016 – 1 December 2016 4. TITLE AND SUBTITLE THIN-FILM MAGNETLESS FARADAY ROTATORS FOR COMPACT HETEROGENEOUS INTEGRATED OPTICAL...transfer of ultra-compact thin-film magnetless Faraday rotators to silicon photonic substrates. Thin films of magnetization latching bismuth

Optimization of nanocomposite Au/TiO2 thin films towards LSPR optical-sensing

Science.gov (United States)

Rodrigues, M. S.; Costa, D.; Domingues, R. P.; Apreutesei, M.; Pedrosa, P.; Martin, N.; Correlo, V. M.; Reis, R. L.; Alves, E.; Barradas, N. P.; Sampaio, P.; Borges, J.; Vaz, F.

2018-04-01

Nanomaterials based on Localized Surface Plasmon Resonance (LSPR) phenomena are revealing to be an important solution for several applications, namely those of optical biosensing. The main reasons are mostly related to their high sensitivity, with label-free detection, and to the simplified optical systems that can be implemented. For the present work, the optical sensing capabilities were tailored by optimizing LSPR absorption bands of nanocomposite Au/TiO2 thin films. These were grown by reactive DC magnetron sputtering. The main deposition parameters changed were the number of Au pellets placed in the Ti target, the deposition time, and DC current applied to the Ti-Au target. Furthermore, the Au NPs clustering, a key feature to have biosensing responses, was induced by several post-deposition in-air annealing treatments at different temperatures, and investigated via SEM analysis. Results showed that the Au/TiO2 thin films with a relatively low thickness (∼100 nm), revealing concentrations of Au close to 13 at.%, and annealed at temperatures above 600 °C, had the most well-defined LSPR absorption band and thus, the most promising characteristics to be explored as optical sensors. The NPs formation studies revealed an incomplete aggregation at 300 and 500 ⁰C and well-defined spheroidal NPs for higher temperatures. Plasma treatment with Ar led to a gradual blue-shift of the LSPR absorption band, which demonstrates the sensitivity of the films to changes in the dielectric environment surrounding the NPs (essential for optical sensing applications) and the exposure of the Au nanoparticles (crucial for a higher sensitivity).

Effect of nitrogen environment on NdFeB thin films grown by radio frequency plasma beam assisted pulsed laser deposition

International Nuclear Information System (INIS)

Constantinescu, C.; Patroi, E.; Codescu, M.; Dinescu, M.

2013-01-01

Highlights: ► NdFeB thin films grown by PLD, in vacuum and in nitrogen, are presented. ► Nitrogen inclusion in thin film structures is related to improved coercitivity. ► Magnetical, optical and morphological properties of the thin films are discussed. - Abstract: NdFeB is a very attractive material for applications in electrical engineering and in electronics, for high-tech devices where high coercive field and high remanence are needed. In this paper we demonstrate that the deposition of nitrogen doped NdFeB thin films by pulsed laser deposition, in the presence of a nitrogen radiofrequency plasma beam, exhibit improved magnetic properties and surface morphology, when compared to vacuum deposited NdFeB layers. A Nd:YAG pulsed laser (3ω and 4ω) was focused on a NdFeB target, in vacuum, or in the presence of a nitrogen plasma beam. Substrate temperature (RT-850 °C), nitrogen gas pressure, and radiofrequency power (75–150 W), were particularly varied. The thin films were investigated by means of X-ray diffraction, atomic force microscopy, scanning electron microscopy, spectroscopic-ellipsometry, and vibrating sample magnetometry.

Effect of nitrogen environment on NdFeB thin films grown by radio frequency plasma beam assisted pulsed laser deposition

Energy Technology Data Exchange (ETDEWEB)

Constantinescu, C., E-mail: catalin.constantinescu@inflpr.ro [National Institute for Laser, Plasma and Radiation Physics, 409 Atomistilor bd., Magurele, RO-077125, Bucharest (Romania); Patroi, E.; Codescu, M. [National Institute for Research and Development in Electrical Engineering - Advanced Research, 313 Spl. Unirii, Sector 3, RO-030138, Bucharest (Romania); Dinescu, M. [National Institute for Laser, Plasma and Radiation Physics, 409 Atomistilor bd., Magurele, RO-077125, Bucharest (Romania)

2013-03-01

Highlights: Black-Right-Pointing-Pointer NdFeB thin films grown by PLD, in vacuum and in nitrogen, are presented. Black-Right-Pointing-Pointer Nitrogen inclusion in thin film structures is related to improved coercitivity. Black-Right-Pointing-Pointer Magnetical, optical and morphological properties of the thin films are discussed. - Abstract: NdFeB is a very attractive material for applications in electrical engineering and in electronics, for high-tech devices where high coercive field and high remanence are needed. In this paper we demonstrate that the deposition of nitrogen doped NdFeB thin films by pulsed laser deposition, in the presence of a nitrogen radiofrequency plasma beam, exhibit improved magnetic properties and surface morphology, when compared to vacuum deposited NdFeB layers. A Nd:YAG pulsed laser (3{omega} and 4{omega}) was focused on a NdFeB target, in vacuum, or in the presence of a nitrogen plasma beam. Substrate temperature (RT-850 Degree-Sign C), nitrogen gas pressure, and radiofrequency power (75-150 W), were particularly varied. The thin films were investigated by means of X-ray diffraction, atomic force microscopy, scanning electron microscopy, spectroscopic-ellipsometry, and vibrating sample magnetometry.

Optical diagnostics of lead and PbGa2S4 layered crystal laser plasmas

International Nuclear Information System (INIS)

Shuaibov, A.K.; Dashchenko, A.I.; Shevera, I.V.

2001-01-01

Laser plasmas produced at the surfaces of lead and a PbGa 2 S 4 layered crystal irradiated by a neodymium laser with λ = 1.06 μm, pulse duration τ = 20 ns, and intensity W = (1-2) x 10 9 W/cm 2 are studied using optical diagnostics. It is shown that, in a lead plasma, the most intense (characteristic) lines are the PbI 405.7-nm, PbI 368.3-nm, PbI 364-nm, and PbII 220.4-nm lines. In a layered crystal plasma, the emission spectrum is an aggregation of the most intense PbI and GaI lines, whereas sulfur lines are absent. The bottlenecks of the recombination of the ionic and atomic components of the lead and PbGa 2 S 4 crystal plasmas are determined. The average propagation velocity of the lead laser plume is 18-20 km/s. A comparative analysis of the emission dynamics of PbI and GaI lines in the laser plasmas of these metals and in the plasma of a PbGa 2 S 4 crystal is carried out. The results obtained are important for the optical diagnostics of the plasmas of lead- and gallium-containing crystals and for the optimization of laser deposition of the thin films of these substances

Optics and Plasma Research Department annual progress report for 2004

DEFF Research Database (Denmark)

Bindslev, Henrik; Lynov, Jens-Peter; Pedersen, C.

2005-01-01

The Optics and Plasma Research Department performs basic and applied research within three scientific programmes: (1) laser systems and optical materials, (2) optical diagnostics and information processing and (3) plasma physics and technology. Thedepartment has core competencies in optical sensors......, optical materials, biophotonics, fusion plasma physics, and industrial plasma technology. The department employs key technologies in micro- and nanotechnology for optical systems, temperaturecalibration, and infrared measurement techniques. The research is supported by several EU programmes, including...

Layer-by-layer thinning of MoSe_2 by soft and reactive plasma etching

International Nuclear Information System (INIS)

Sha, Yunfei; Xiao, Shaoqing; Zhang, Xiumei; Qin, Fang; Gu, Xiaofeng

2017-01-01

Highlights: • Soft plasma etching technique using SF_6 + N_2 as precursors for layer-by-layer thinning of MoSe_2 was adopted in this work. • Optical microscopy, Raman, photoluminescence and atomic force microscopy measurements were used to confirm the thickness change. • Layer-dependent vibrational and photoluminescence spectra of the etched MoSe_2 were also demonstrated. • Equal numbers of MoSe_2 layers can be removed uniformly without affecting the underlying SiO_2 substrate and the remaining MoSe_2 layers. - Abstract: Two-dimensional (2D) transition metal dichalcogenides (TMDs) like molybdenum diselenide (MoSe_2) have recently gained considerable interest since their properties are complementary to those of graphene. Unlike gapless graphene, the band structure of MoSe_2 can be changed from the indirect band gap to the direct band gap when MoSe_2 changed from bulk material to monolayer. This transition from multilayer to monolayer requires atomic-layer-precision thining of thick MoSe_2 layers without damaging the remaining layers. Here, we present atomic-layer-precision thinning of MoSe_2 nanaosheets down to monolayer by using SF_6 + N_2 plasmas, which has been demonstrated to be soft, selective and high-throughput. Optical microscopy, atomic force microscopy, Raman and photoluminescence spectra suggest that equal numbers of MoSe_2 layers can be removed uniformly regardless of their initial thickness, without affecting the underlying SiO_2 substrate and the remaining MoSe_2 layers. By adjusting the etching rates we can achieve complete MoSe_2 removal and any disired number of MoSe_2 layers including monolayer. This soft plasma etching method is highly reliable and compatible with the semiconductor manufacturing processes, thereby holding great promise for various 2D materials and TMD-based devices.

Optical characterization of composite layers prepared by plasma polymerization

International Nuclear Information System (INIS)

Radeva, E; Hikov, T; Mitev, D; Pramatarova, L; Stroescu, H; Nicolescu, M; Gartner, M; Presker, R

2016-01-01

Thin composite layers from polymer/nanoparticles (Ag-nanoparticles and detonation nanodiamonds) were prepared by plasma polymerization process on the base of hexamethyldisiloxane. The variation of the layer composition was achieved by changing the type of nanoparticles. The optical measurement techniques used were UV-VIS-NIR ellipsometry (SE), Fourier-transformed infrared spectroscopy (FTIR) and Raman spectroscopy. The values of the refractive index determined are in the range 1.30 to 1.42. All samples are transparent with transmission between 85-95% and very smooth. The change in Raman and FTIR spectra of the composites verify the expected bonding between polymer and diamond nanoparticles due to the penetration of the fillers in the polymer matrix. The comparison of the spectra of the corresponding NH3 plasma treated composites revealed that the composite surface becomes more hydrophilic. The obtained results indicate that preparation of layers with desired compositions is possible at a precise control of the detonation nanodiamond materials. (paper)

Optical constant of thin gold films

DEFF Research Database (Denmark)

Yakubovsky, D. I.; Fedyanin, D. Yu; Arsenin, A. V.

2017-01-01

The performance of metal-based devices is limited by ohmic losses in the metal, which are determined by electron scattering. The structural properties of gold thin films also play an important role in the film quality, which may affect its' optical properties and the overall capability...... and spectroscopic ellipsometry, the structural morphology and optical properties of polycrystalline gold thin films (fabricated by e-beam deposition at a low sputtering rate smooth gold) in the thickness range of 20 - 200 nm. By extracting the real and imaginary dielectric function and the Drude parameter...... of the device. At the same time, metal films of different thicknesses are needed for different applications and, since these films are polycrystalline, their internal properties and surface roughness can greatly vary from one thickness to another. In this work, we study, using atomic force microscopy...

Optical properties of cluster plasma

Energy Technology Data Exchange (ETDEWEB)

Kishimoto, Yasuaki; Tajima, Toshiki [Japan Atomic Energy Research Inst., Neyagawa, Osaka (Japan). Kansai Research Establishment; Downer, M C

1998-03-01

It is shown that unlike a gas plasma or an electron plasma in a metal, an ionized clustered material (`cluster plasma`) permits propagation below the plasma cut-off of electromagnetic (EM) waves whose phase velocity is close to but below the speed of light. This results from the excitation of a plasma oscillation mode (and/or polarization mode) through the cluster surface which does not exist in usual gaseous plasma. The existence of this new optical mode, cluster mode, is confirmed via numerical simulation. (author)

Evaluating optical hazards from plasma arc cutting.

Science.gov (United States)

Glassford, Eric; Burr, Gregory

2018-01-01

The Health Hazard Evaluation Program of the National Institute for Occupational Safety and Health evaluated a steel building materials manufacturer. The employer requested the evaluation because of concerns about optical radiation hazards from a plasma arc cutting system and the need to clarify eye protection requirements for plasma operators, other employees, and visitors. The strength of the ultraviolet radiation, visible radiation (light), and infrared radiation generated by the plasma arc cutter was measured at various distances from the source and at different operating amperages. Investigators also observed employees performing the plasma arc cutting. Optical radiation above safe levels for the unprotected eyes in the ultraviolet-C, ultraviolet-B, and visible light ranges were found during plasma arc cutting. In contrast, infrared and ultraviolet-A radiation levels during plasma arc cutting were similar to background levels. The highest non-ionizing radiation exposures occurred when no welding curtains were used. A plasma arc welding curtain in place did not eliminate optical radiation hazards to the plasma arc operator or to nearby employees. In most instances, the measured intensities for visible light, UV-C, and UV-B resulted in welding shade lens numbers that were lower than those stipulated in the OSHA Filter Lenses for Protection Against Radiant Energy table in 29 CFR 1910.133(a)(5). [1] Investigators recommended using a welding curtain that enclosed the plasma arc, posting optical radiation warning signs in the plasma arc cutter area, installing audible or visual warning cues when the plasma arc cutter was operating, and using welding shades that covered the plasma arc cutter operator's face to protect skin from ultraviolet radiation hazards.

Magneto-optic properties and optical parameter of thin MnCo films

Directory of Open Access Journals (Sweden)

E Attaran Kakhki

2009-09-01

Full Text Available Having precise hysterics loop of thin ferroelectric and ferromagnetic layers for optical switching and optical storages are important. A hysterieses loop can be achieved from a phenomenon call the magneto-optic effect. The magneto-optic effect is the rotation of a linear polarized electromagnetic wave propagated through a ferromagnetic medium. When light is transmitted through a layer of magnetic material the result is called the Faraday effects and in the reflection mode Kerr effect. In the present work we prepared a thin layer of MnxCo3-xO4 (0≤ x ≤ 1 and a binary form of MnO/Co3O4 by the spray pyrolysis method. The films have been characterized by a special set up of magneto-optic hysterics loop plotter containing a polarized He- Ne laser beam and a special electronic circuit. Faraday rotation were measured for these films by hysterics loop plotter and their optical properties were also obtained by spatial software designed for this purpose according to Swane Poel theoretical method. The measurements show that the samples at diluted Mn study has are ferromagnetic and the magneto-optic rotation show a good enhance respect to the single Co layers. Also, the study has shown that the MnCo oxide layer have two different energy gaps and by increasing of Mn this energy decreases and fall to 0.13 eV.

Quantum effects on propagation of bulk and surface waves in a thin quantum plasma film

International Nuclear Information System (INIS)

Moradi, Afshin

2015-01-01

The propagation of bulk and surface plasma waves in a thin quantum plasma film is investigated, taking into account the quantum effects. The generalized bulk and surface plasma dispersion relation due to quantum effects is derived, using the quantum hydrodynamic dielectric function and applying appropriate additional boundary conditions. The quantum mechanical and film geometric effects on the bulk and surface modes are discussed. It is found that quantum effects become important for a thin film of small thickness. - Highlights: • New bulk and surface plasma dispersion relations due to quantum effects are derived, in a thin quantum plasma film. • It is found that quantum effects become important for a thin quantum film of small thickness

Raman spectroscopy of optical properties in CdS thin films

Directory of Open Access Journals (Sweden)

Trajić J.

2015-01-01

Full Text Available Properties of CdS thin films were investigated applying atomic force microscopy (AFM and Raman spectroscopy. CdS thin films were prepared by using thermal evaporation technique under base pressure 2 x 10-5 torr. The quality of these films was investigated by AFM spectroscopy. We apply Raman scattering to investigate optical properties of CdS thin films, and reveal existence of surface optical phonon (SOP mode at 297 cm-1. Effective permittivity of mixture were modeled by Maxwell - Garnet approximation. [Projekat Ministarstva nauke Republike Srbije, br. 45003

Atmospheric Pressure Plasma Jet-Assisted Synthesis of Zeolite-Based Low-k Thin Films.

Science.gov (United States)

Huang, Kai-Yu; Chi, Heng-Yu; Kao, Peng-Kai; Huang, Fei-Hung; Jian, Qi-Ming; Cheng, I-Chun; Lee, Wen-Ya; Hsu, Cheng-Che; Kang, Dun-Yen

2018-01-10

Zeolites are ideal low-dielectric constant (low-k) materials. This paper reports on a novel plasma-assisted approach to the synthesis of low-k thin films comprising pure-silica zeolite MFI. The proposed method involves treating the aged solution using an atmospheric pressure plasma jet (APPJ). The high reactivity of the resulting nitrogen plasma helps to produce zeolite crystals with high crystallinity and uniform crystal size distribution. The APPJ treatment also remarkably reduces the time for hydrothermal reaction. The zeolite MFI suspensions synthesized with the APPJ treatment are used for the wet deposition to form thin films. The deposited zeolite thin films possessed dense morphology and high crystallinity, which overcome the trade-off between crystallinity and film quality. Zeolite thin films synthesized using the proposed APPJ treatment achieve low leakage current (on the order of 10 -8 A/cm 2 ) and high Young's modulus (12 GPa), outperforming the control sample synthesized without plasma treatment. The dielectric constant of our zeolite thin films was as low as 1.41. The overall performance of the low-k thin films synthesized with the APPJ treatment far exceed existing low-k films comprising pure-silica MFI.

Associations of geomagnetic activity with plasma sheet thinning and expansion: A statistical study

International Nuclear Information System (INIS)

Hones, E.W. Jr.; Pytte, T.; West, H.I. Jr.

1984-01-01

Associations of geomagnetic activity in the auroral zone with thinnings and expansions of the magnetotail plasma sheet are examined statistically in this paper. We first identified many plasma sheet thinnings and expansions in plasma and particle data from VELA satellites and from OGO 5 without reference to the ground magnetic data. These events were grouped according to the location of the detecting satellite in the magnetotail. For each such group the times of thinning or expansion were then used as fiducial times in a superposed-epoch analysis of the geomagnetic AL index values that were recorded in 8-hour intervals centered on the event times. The results show that many plasma sheet thinnings and expansions are related to discrete negative bay structures that are the classical signature of substorms. Furthermore, they support earlier findings that plasma sheet thinning and expansion at the VELA orbit (rroughly-equal18 R/sub E/) tend to be associated with the onset of the auroral zone negative bay and the beginning of its subsidence, respectively. Earthward of rroughly-equal13-15 R/sub E/, plasma sheet expansion occurs near the time of the onset of the negative bay, again in agreement with earlier findings. A large fraction of plasma sheet expansions to half thicknesses of > or approx. =6 R/sub E/ at the VELA orbit are associated not with a baylike geomagnetic disturbance but with subsidence of a prolonged interval of disturbance. The study also shows that many plasma sheet expansions are related simply to generally enhanced geomagnetic activity showing no baylike or other distinctive features

AC plasma induced modifications in Sb{sub 2}S{sub 3} thin films

Energy Technology Data Exchange (ETDEWEB)

Calixto-Rodriguez, M; Martinez, H [Instituto de Ciencias Fisicas, Universidad Nacional Autonoma de Mexico, Apartado Postal 48-3, 62210, Cuernavaca, Morelos (Mexico); Castillo, F [Instituto de Ciencias Nucleares, Universidad Nacional Autonoma de Mexico, Apartado Postal 70-543, 04510, Mexico D. F. (Mexico); Pena, Y [Universidad Autonoma de Nuevo Leon, Facultad de Ciencias Quimicas, Pedro de Alba s/n, Cd. Universitaria, San Nicolas de los Garza, N.L (Mexico); Sanchez-Juarez, A, E-mail: ciro@nucleares.unam.m [Centro de Investigacion en EnergIa, Universidad Nacional Autonoma de Mexico, Privada Xochicalco s/n Col. Centro, Temixco, Morelos, C.P. 62580 (Mexico)

2010-01-01

Sb{sub 2}S{sub 3} thin films, deposited by the chemical bath deposition method, were treated with N{sub 2} plasma at 3.0 Torr during several minutes. The as-prepared Sb{sub 2}S{sub 3} thin films and films treated with N{sub 2} plasma have been characterized using several techniques. X-ray diffraction studies have shown that plasma treatment induced recrystallization on the as-prepared Sb{sub 2}S{sub 3}thin films. The band gap values decreased from 2.37 to 1.82 eV after plasma treatment, and the electrical conductivity increased from 10{sup 9} to 10{sup 7} ({Omega}cm){sup -1} due to the annealing effect.

Experimental study of the plasma fluorination of Y-Ba-Cu-O thin films

CERN Document Server

Li Qi; Ji Zheng Ming; Feng Yi Jun; Kang Lin; Yang Sen Zu; Wu Pei Heng; Wang Xiao Shu; Ye Yuda

2002-01-01

The authors have experimentally studied the surface modifications of Y-Ba-Cu-O (YBCO) thin films using CF sub 4 plasma. The intensity of the plasma fluorination was controlled by changing the biasing voltage and the time of the plasma treatment. Microstructural analyses reveal that the oxygen content of the YBCO thin films was changed. Transport measurements of sufficient fluorinated YBCO films imply that the films changed totally into an oxygen-deficient semi-conducting state. From these experimental results, the authors believe that plasma fluorination is quite a useful method to form controllable a thin barrier layer in fabricating interface engineered junctions and to form a stable narrow weak-link region in fabricating planar superconductor-normal-superconductor junctions

Determination of the optical absorption spectra of thin layers from their photoacoustic spectra

Science.gov (United States)

Bychto, Leszek; Maliński, Mirosław; Patryn, Aleksy; Tivanov, Mikhail; Gremenok, Valery

2018-05-01

This paper presents a new method for computations of the optical absorption coefficient spectra from the normalized photoacoustic amplitude spectra of thin semiconductor samples deposited on the optically transparent and thermally thick substrates. This method was tested on CuIn(Te0.7Se0.3)2 thin films. From the normalized photoacoustic amplitude spectra, the optical absorption coefficient spectra were computed with the new formula as also with the numerical iterative method. From these spectra, the value of the energy gap of the thin film material and the type of the optical transitions were determined. From the experimental optical transmission spectra, the optical absorption coefficient spectra were computed too, and compared with the optical absorption coefficient spectra obtained from photoacoustic spectra.

Handbook of thin film technology

CERN Document Server

Frey, Hartmut

2015-01-01

“Handbook of Thin Film Technology” covers all aspects of coatings preparation, characterization and applications. Different deposition techniques based on vacuum and plasma processes are presented. Methods of surface and thin film analysis including coating thickness, structural, optical, electrical, mechanical and magnetic properties of films are detailed described. The several applications of thin coatings and a special chapter focusing on nanoparticle-based films can be found in this handbook. A complete reference for students and professionals interested in the science and technology of thin films.

Structural and optical properties of ITO and Cu doped ITO thin films

Science.gov (United States)

Chakraborty, Deepannita; Kaleemulla, S.; Rao, N. Madhusudhana; Subbaravamma, K.; Rao, G. Venugopal

2018-04-01

(In0.95Sn0.05)2O3 and (In0.90Cu0.05Sn0.05)2O3 thin films were coated onto glass substrate by electron beam evaporation technique. The structural and optical properties of ITO and Cu doped ITO thin films have been studied by X-ray diffractometer (XRD) and UV-Vis-NIR spectrophotometer. The crystallite size obtained for ITO and Cu doped ITO thin films was in the range of 24 nm to 22 nm. The optical band gap of 4 eV for ITO thin film sample has been observed. The optical band gap decreases to 3.85 eV by doping Cu in ITO.

Towards Enhanced Performance Thin-film Composite Membranes via Surface Plasma Modification

Science.gov (United States)

Reis, Rackel; Dumée, Ludovic F.; Tardy, Blaise L.; Dagastine, Raymond; Orbell, John D.; Schutz, Jürg A.; Duke, Mikel C.

2016-01-01

Advancing the design of thin-film composite membrane surfaces is one of the most promising pathways to deal with treating varying water qualities and increase their long-term stability and permeability. Although plasma technologies have been explored for surface modification of bulk micro and ultrafiltration membrane materials, the modification of thin film composite membranes is yet to be systematically investigated. Here, the performance of commercial thin-film composite desalination membranes has been significantly enhanced by rapid and facile, low pressure, argon plasma activation. Pressure driven water desalination tests showed that at low power density, flux was improved by 22% without compromising salt rejection. Various plasma durations and excitation powers have been systematically evaluated to assess the impact of plasma glow reactions on the physico-chemical properties of these materials associated with permeability. With increasing power density, plasma treatment enhanced the hydrophilicity of the surfaces, where water contact angles decreasing by 70% were strongly correlated with increased negative charge and smooth uniform surface morphology. These results highlight a versatile chemical modification technique for post-treatment of commercial membrane products that provides uniform morphology and chemically altered surface properties. PMID:27363670

Optics and Plasma Research Department. Annual progress report for 2004

International Nuclear Information System (INIS)

Bindslev, H.; Lynov, J.P.; Pedersen, C.; Petersen, P.M.; Skaarup, B.

2005-03-01

The Optics and Plasma Research Department performs basic and applied research within three scientific programmes: (1) laser systems and optical materials, (2) optical diagnostics and information processing and (3) plasma physics and technology. The department has core competencies in optical sensors, optical materials, biophotonics, fusion plasma physics, and industrial plasma technology. The department employs key technologies in micro- and nanotechnology for optical systems, temperature calibration, and infrared measurement techniques. The research is supported by several EU programmes, including EURATOM, by Danish research councils and by industry. A summary of the activities in 2004 is presented. (au)

Effects of phosphorus doping by plasma immersion ion implantation on the structural and optical characteristics of Zn0.85Mg0.15O thin films

International Nuclear Information System (INIS)

Saha, S.; Nagar, S.; Chakrabarti, S.

2014-01-01

ZnMgO thin films deposited on 〈100〉 Si substrates by RF sputtering were annealed at 800, 900, and 1000 °C after phosphorus plasma immersion ion implantation. X-ray diffraction spectra confirmed the presence of 〈101 ¯ 0〉 and 〈101 ¯ 3〉 peaks for all the samples. However, in case of the annealed samples, the 〈0002〉 peak was also observed. Scanning electron microscopy images revealed the variation in surface morphology caused by phosphorus implantation. Implanted and non-implanted samples were compared to examine the effects of phosphorus implantation on the optical properties of ZnMgO. Optical characteristics were investigated by low-temperature (15 K) photoluminescence experiments. Inelastic exciton–exciton scattering and localized, and delocalized excitonic peaks appeared at 3.377, 3.42, and 3.45 eV, respectively, revealing the excitonic effect resulting from phosphorus implantation. This result is important because inelastic exciton–exciton scattering leads to nonlinear emission, which can improve the performance of many optoelectronic devices

Preparation of Pb(Zr, Ti)O3 Thin Films by Plasma-Assisted Sputtering

Science.gov (United States)

Hioki, Tsuyoshi; Akiyama, Masahiko; Ueda, Tomomasa; Onozuka, Yutaka; Suzuki, Kouji

1999-09-01

A novel plasma-assisted RF magnetron sputtering system with an immersed coil antenna between a target and a substrate was applied for preparing Pb(Zr, Ti)O3 (PZT) thin films. The antenna enabled the generation of inductively coupled plasma (ICP) independently of the target RF source. The plasma assisted by the antenna resulted in the changes of ion fluxes and these energy distributions irradiating to the substrate. The crystalline phase of the deposited PZT thin films was occupied by the perovskite phase depending on the antenna power. In addition, a high deposition rate, modified uniformity of film thickness, and a dense film structure with large columnar grains were obtained as a result of effects of the assisted plasma. The application of the plasma-assisted sputtering method may enable the preparation of PZT thin films that haveexcellent properties.

Genetic algorithm approach to thin film optical parameters determination

International Nuclear Information System (INIS)

Jurecka, S.; Jureckova, M.; Muellerova, J.

2003-01-01

Optical parameters of thin film are important for several optical and optoelectronic applications. In this work the genetic algorithm proposed to solve optical parameters of thin film values. The experimental reflectance is modelled by the Forouhi - Bloomer dispersion relations. The refractive index, the extinction coefficient and the film thickness are the unknown parameters in this model. Genetic algorithm use probabilistic examination of promissing areas of the parameter space. It creates a population of solutions based on the reflectance model and then operates on the population to evolve the best solution by using selection, crossover and mutation operators on the population individuals. The implementation of genetic algorithm method and the experimental results are described too (Authors)

Evaluation of space environmental effects on metals and optical thin films on EOIM-3

Energy Technology Data Exchange (ETDEWEB)

Vaughn, J.A.; Linton, R.C.; Finckenor, M.M.; Kamenetzky, R.R.

1995-02-01

Metals and optical thin films exposed to the space environment on the Third Flight of the Evaluation of Oxygen Interactions with Materials (EOIM-3) payload, onboard Space Shuttle mission STS-46 were evaluated. The materials effects described in this paper include the effects of space exposure on various pure metals, optical thin films, and optical thin film metals. The changes induced by exposure to the space environment in the material properties were evaluated using bidirectional reflectance distribution function (BRDF), specular reflectance (250 nm to 2500 nm), ESCA, VUV reflectance (120 nm to 200 nm), ellipsometry, FTIR and optical properties. Using these analysis techniques gold optically thin film metal mirrors with nickel undercoats were observed to darken due to nickel diffusion through the gold to the surface. Also, thin film nickel mirrors formed nickel oxide due to exposure to both the atmosphere and space.

Evaluation of space environmental effects on metals and optical thin films on EOIM-3

Science.gov (United States)

Vaughn, Jason A.; Linton, Roger C.; Finckenor, Miria M.; Kamenetzky, Rachel R.

1995-01-01

Metals and optical thin films exposed to the space environment on the Third Flight of the Evaluation of Oxygen Interactions with Materials (EOIM-3) payload, onboard Space Shuttle mission STS-46 were evaluated. The materials effects described in this paper include the effects of space exposure on various pure metals, optical thin films, and optical thin film metals. The changes induced by exposure to the space environment in the material properties were evaluated using bidirectional reflectance distribution function (BRDF), specular reflectance (250 nm to 2500 nm), ESCA, VUV reflectance (120 nm to 200 nm), ellipsometry, FTIR and optical properties. Using these analysis techniques gold optically thin film metal mirrors with nickel undercoats were observed to darken due to nickel diffusion through the gold to the surface. Also, thin film nickel mirrors formed nickel oxide due to exposure to both the atmosphere and space.

Determination and analysis of dispersive optical constants of some organic thin films

International Nuclear Information System (INIS)

Kaya, Y.; Taysioglu, A. A.; Peksoez, A.; Irez, G.; Derebasi, N.; Kaynak, G.

2010-01-01

Schiff bases are an important class of ligands in coordination chemistry and find extensive application in different fields. Recently, increased interest in organic thin film materials has arisen due to their extensive applications in the fields of mechanics, flexible electronics and optics. Optoelectronics is the area in which organic films and organic-inorganic nanostructures have found their main applications in the last decade. These organic thin films have been also used in a wide variety of applications such as Schottky diodes, solid state devices and optical sensors. The optical constants (refractive index, n; extinction coefficient, k and dielectric constant, e) of some organic thin films were determined using reflectance and transmittance spectra. Analysis of the basis absorption spectra was also carried out to determine optical band gap (Eg) and Urbach parameter (E0). A surface observation of these thin films was also carried out by an Atomic Force Microscope.

AZO Thin Films by Sol-Gel Process for Integrated Optics

Directory of Open Access Journals (Sweden)

Azzedine Boudrioua

2013-07-01

Full Text Available Undoped and aluminum-doped zinc oxide (AZO thin films are prepared by the sol-gel process. Zinc acetate dihydrate, ethanol, and monoethanolamine are used as precursor, solvent, and stabilizer, respectively. In the case of AZO, aluminum nitrate nonahydrate is added to the precursor solution with an atomic percentage equal to 1 and 2 at.% Al. The multi thin layers are deposited by spin-coating onto glass substrates, and are transformed into ZnO upon annealing at 550 °C. Films display a strong preferential orientation, with high values for the Texture Coefficients (TC of the (002 direction (TC(002 ≈ 3. The structural, morphological, and optical properties of the thin films as a function of aluminum content have been investigated using X-Ray Diffraction (XRD, Atomic Force Microscopy (AFM, and Scanning Electronic Microscopy (SEM. Waveguiding properties of the thin films have been also studied using m-lines spectroscopy. The results indicate that the films are monomodes at 632.8 nm with optical propagation optical losses estimated around 1.6 decibel per cm (dB/cm.

Chemically deposited Sb2S3 thin films for optical recording

International Nuclear Information System (INIS)

Shaji, S; Arato, A; Castillo, G Alan; Palma, M I Mendivil; Roy, T K Das; Krishnan, B; O'Brien, J J; Liu, J

2010-01-01

Laser induced changes in the properties of Sb 2 S 3 thin films prepared by chemical bath deposition are described in this paper. Sb 2 S 3 thin films of thickness 550 nm were deposited from a solution containing SbCl 3 and Na 2 S 2 O 3 at 27 0 C for 5 h. These thin films were irradiated by a 532 nm continuous wave laser beam under different conditions at ambient atmosphere. X-ray diffraction analysis showed amorphous to polycrystalline transformation due to laser exposure of these thin films. Morphology and composition of these films were described. Optical properties of these films before and after laser irradiation were analysed. The optical band gap of the material was decreased due to laser induced crystallization. The results obtained confirm that there is further scope for developing this material as an optical recording media.

Structural and optical investigations of sol–gel derived lithium titanate thin films

International Nuclear Information System (INIS)

Łapiński, M.; Kościelska, B.; Sadowski, W.

2012-01-01

Highlights: ► Lithium titanate thin films were deposited on glass substrates by sol–gel method. ► After annealing at 550 °C samples had lithium titanate spinel structure. ► Above 80 h of annealing mixture of lithium titanate and titanium oxides was appeared. ► Optical transmittance decreased with increasing of annealing time. - Abstract: In this paper structural and optical studies of lithium titanate (LTO) thin films are presented. Nanocrystalline thin films with 800 nm thickness were prepared by sol–gel method. To examine the influence of the annealing time on as-prepared films crystallization, the coatings were heated at 550 °C for 10, 20 and 80 h. Structure of manufactured thin films was investigated using X-ray diffraction (XRD). The most visible lithium titanate phase was obtained after 20 h annealing. Increasing of annealing time over 20 h revealed appearance of titanium oxides phase. On the basis of transmission characteristic optical properties were calculated. It was found that transmission through the thin films was reduced and position of the fundamental absorption edge was shifted toward a longer wavelength with increasing of annealing time. The optical band gap was calculated for direct allowed and indirect allowed transitions from optical absorption spectra.

Effects of phosphorus on the electrical characteristics of plasma deposited hydrogenated amorphous silicon carbide thin films

Science.gov (United States)

Alcinkaya, Burak; Sel, Kivanc

2018-01-01

The properties of phosphorus doped hydrogenated amorphous silicon carbide (a-SiCx:H) thin films, that were deposited by plasma enhanced chemical vapor deposition technique with four different carbon contents (x), were analyzed and compared with those of the intrinsic a-SiCx:H thin films. The carbon contents of the films were determined by X-ray photoelectron spectroscopy. The thickness and optical energies, such as Tauc, E04 and Urbach energies, of the thin films were determined by UV-Visible transmittance spectroscopy. The electrical properties of the films, such as conductivities and activation energies were analyzed by temperature dependent current-voltage measurements. Finally, the conduction mechanisms of the films were investigated by numerical analysis, in which the standard transport mechanism in the extended states and the nearest neighbor hopping mechanism in the band tail states were taken into consideration. It was determined that, by the effect of phosphorus doping the dominant conduction mechanism was the standard transport mechanism for all carbon contents.

Thin film ceramic thermocouples

Science.gov (United States)

Gregory, Otto (Inventor); Fralick, Gustave (Inventor); Wrbanek, John (Inventor); You, Tao (Inventor)

2011-01-01

A thin film ceramic thermocouple (10) having two ceramic thermocouple (12, 14) that are in contact with each other in at least on point to form a junction, and wherein each element was prepared in a different oxygen/nitrogen/argon plasma. Since each element is prepared under different plasma conditions, they have different electrical conductivity and different charge carrier concentration. The thin film thermocouple (10) can be transparent. A versatile ceramic sensor system having an RTD heat flux sensor can be combined with a thermocouple and a strain sensor to yield a multifunctional ceramic sensor array. The transparent ceramic temperature sensor that could ultimately be used for calibration of optical sensors.

Magneto-optical effect in Mn-Sb thin films

International Nuclear Information System (INIS)

Attaran, E.; Sadabadi, M.

2003-01-01

The magneto-optic Kerr and Faraday effect of Mn-Sb thin films have been studied. The single and multilayer of this film have grown on glass substrate by evaporation. The optical rotation of linear polarized light has been measured by an optical hysteresis plotter in a I/O converter amplifier circuit. Our results indicate a polar Kerr rotation up to 0.5 degree and in a double Mn S b this rotation research to maximum

Plasma geometric optics analysis and computation

International Nuclear Information System (INIS)

Smith, T.M.

1983-01-01

Important practical applications in the generation, manipulation, and diagnosis of laboratory thermonuclear plasmas have created a need for elaborate computational capabilities in the study of high frequency wave propagation in plasmas. A reduced description of such waves suitable for digital computation is provided by the theory of plasma geometric optics. The existing theory is beset by a variety of special cases in which the straightforward analytical approach fails, and has been formulated with little attention to problems of numerical implementation of that analysis. The standard field equations are derived for the first time from kinetic theory. A discussion of certain terms previously, and erroneously, omitted from the expansion of the plasma constitutive relation is given. A powerful but little known computational prescription for determining the geometric optics field in the neighborhood of caustic singularities is rigorously developed, and a boundary layer analysis for the asymptotic matching of the plasma geometric optics field across caustic singularities is performed for the first time with considerable generality. A proper treatment of birefringence is detailed, wherein a breakdown of the fundamental perturbation theory is identified and circumvented. A general ray tracing computer code suitable for applications to radiation heating and diagnostic problems is presented and described

Inductively coupled hydrogen plasma processing of AZO thin films for heterojunction solar cell applications

International Nuclear Information System (INIS)

Zhou, H.P.; Xu, S.; Zhao, Z.; Xiang, Y.

2014-01-01

Highlights: • A high-density plasma reactor of inductively coupled plasma source is used in this work. • The conductivity and transmittance can be enhanced simultaneously in the hydrogen process. • The formation of additional donors and passivation due to the hydrogen plasma processing. • The photovoltaic improvement due to the improved AZO layer and hetero-interface quality in the solar cells. - Abstract: Al-doped ZnO (AZO) thin films deposited by means of RF magnetron sputtering were processed in a low frequency inductively coupled plasma of H 2 , aiming at heterojunction (HJ) solar cell applications. A variety of characterization results show that the hydrogen plasma processing exerts a significant influence on the microstructures, electrical and optical properties of the AZO films. The incorporation of hydrogen under the optimum treatment simultaneously promoted the transmittance and conductivity due to the hydrogen associated passivation effect on the native defects and the formation of shallow donors in the films, respectively. A p-type c-Si based HJ solar cell with a front AZO contact was also treated in as-generated non-equilibrium hydrogen plasma and the photovoltaic performance of the solar cell was prominently improved. The underlying mechanism was discussed in terms of the beneficial impacts of high-density hydrogen plasma on the properties of AZO itself and the hetero-interfaces involved in the HJ structure (interface defect and energy band configuration)

Development of optical thin film technology for lasers and synchrotron radiation

International Nuclear Information System (INIS)

Apparao, K.V.S.R.; Bagchi, T.C.; Sahoo, N.K.

1985-01-01

Dielectric multilayer optical thin film devices play an important role not only in the working of lasers but also in different front line research activities using high power lasers and high intensity synchrotron radiation sources. Facilities are set up recently in the Spectroscopy Division to develop the optical thin film design and fabrication technologies indigeneously. Using the facilities thin film devices for different laser applications working in the wavelength range from 300 nm to 1064 nm were developed. Different technical aspects involved in the technology development are briefly described. (author)

Demonstration of high-performance p-type tin oxide thin-film transistors using argon-plasma surface treatments

Science.gov (United States)

Bae, Sang-Dae; Kwon, Soo-Hun; Jeong, Hwan-Seok; Kwon, Hyuck-In

2017-07-01

In this work, we investigated the effects of low-temperature argon (Ar)-plasma surface treatments on the physical and chemical structures of p-type tin oxide thin-films and the electrical performance of p-type tin oxide thin-film transistors (TFTs). From the x-ray photoelectron spectroscopy measurement, we found that SnO was the dominant phase in the deposited tin oxide thin-film, and the Ar-plasma treatment partially transformed the tin oxide phase from SnO to SnO2 by oxidation. The resistivity of the tin oxide thin-film increased with the plasma-treatment time because of the reduced hole concentration. In addition, the root-mean-square roughness of the tin oxide thin-film decreased as the plasma-treatment time increased. The p-type oxide TFT with an Ar-plasma-treated tin oxide thin-film exhibited excellent electrical performance with a high current on-off ratio (5.2 × 106) and a low off-current (1.2 × 10-12 A), which demonstrates that the low-temperature Ar-plasma treatment is a simple and effective method for improving the electrical performance of p-type tin oxide TFTs.

Thin film and multilayer optics for XUV spectral domain (1 nm to 60 nm)

International Nuclear Information System (INIS)

Delmotte, Franck

2010-02-01

The XUV spectral domain (1-60 nm wavelength range) has experienced rapid growth in recent years. On one side, the sources (synchrotron radiation, harmonic generation, x-ray laser, free-electron laser...) require ever more efficient optics, on the other hand, applications (diagnostics of hot plasma, solar physics, x-ray microscopy, EUV lithography, x-ray analysis...) provide new constraints on the design of multilayer stacks. The multilayer mirrors are the only way to achieve efficient optics operating at non-grazing incidence angles in this spectral range. Our work within the team XUV Optics at Laboratoire Charles Fabry de l'Institut d'Optique focuses on the study of materials in thin layers correlated to the study of optical properties of multilayers. The objective is to achieve new multilayer components previously unavailable in the XUV domain, through a better understanding of physical phenomena in these nano-layer stacks. We show through several examples of how we have managed both to improve the performance of multilayer mirrors in a broad spectral range, and secondly, to develop new optical functions: beam splitters, broadband mirrors, dual-band mirrors or phase compensation mirrors. (author)

Determination of optical properties in nanostructured thin films using the Swanepoel method

International Nuclear Information System (INIS)

Sanchez-Gonzalez, J.; Diaz-Parralejo, A.; Ortiz, A.L.; Guiberteau, F.

2006-01-01

We present the methodological framework of the Swanepoel method for the spectrophotometric determination of optical properties in thin films using transmittance data. As an illustrative case study, we determined the refractive index, thickness, absorption index, and extinction coefficient of a nanostructured 3 mol% Y 2 O 3 -doped ZrO 2 (yttria stabilized zirconia, 3YSZ) thin film prepared by the sol-gel method and deposited by dipping onto a soda-lime glass substrate. In addition, using the absorption index obtained with the Swanepoel method, we calculated the optical band gap of the film. The refractive index was found to increase, then decrease, and finally stabilize with increasing wavelength of the radiation, while the absorption index and extinction coefficient decreased monotonically to zero. These trends are explained in terms of the location of the absorption bands. We also deduced that this 3YSZ thin film has a direct optical band gap of 4.6 eV. All these results compared well with those given in the literature for similar thin films. This suggests that the Swanepoel method has an important role to play in the optical characterization of ceramic thin films

Determination of optical properties in nanostructured thin films using the Swanepoel method

Energy Technology Data Exchange (ETDEWEB)

Sanchez-Gonzalez, J. [Departamento de Electronica e Ingenieria Electromecanica, Escuela de Ingenierias Industriales, Universidad de Extremadura, Badajoz 06071 (Spain); Diaz-Parralejo, A. [Departamento de Electronica e Ingenieria Electromecanica, Escuela de Ingenierias Industriales, Universidad de Extremadura, Badajoz 06071 (Spain); Ortiz, A.L. [Departamento de Electronica e Ingenieria Electromecanica, Escuela de Ingenierias Industriales, Universidad de Extremadura, Badajoz 06071 (Spain)]. E-mail: alortiz@unex.es; Guiberteau, F. [Departamento de Electronica e Ingenieria Electromecanica, Escuela de Ingenierias Industriales, Universidad de Extremadura, Badajoz 06071 (Spain)

2006-06-30

We present the methodological framework of the Swanepoel method for the spectrophotometric determination of optical properties in thin films using transmittance data. As an illustrative case study, we determined the refractive index, thickness, absorption index, and extinction coefficient of a nanostructured 3 mol% Y{sub 2}O{sub 3}-doped ZrO{sub 2} (yttria stabilized zirconia, 3YSZ) thin film prepared by the sol-gel method and deposited by dipping onto a soda-lime glass substrate. In addition, using the absorption index obtained with the Swanepoel method, we calculated the optical band gap of the film. The refractive index was found to increase, then decrease, and finally stabilize with increasing wavelength of the radiation, while the absorption index and extinction coefficient decreased monotonically to zero. These trends are explained in terms of the location of the absorption bands. We also deduced that this 3YSZ thin film has a direct optical band gap of 4.6 eV. All these results compared well with those given in the literature for similar thin films. This suggests that the Swanepoel method has an important role to play in the optical characterization of ceramic thin films.

The structural and optical characterizations of tetraphenylporphyrin thin films

Energy Technology Data Exchange (ETDEWEB)

Makhlouf, M.M., E-mail: m_makhlof@hotmail.com [Physics Department, Faculty of Applied Medical Science at Turabah branch, Taif University, Turabah, 21995 (Saudi Arabia); Department of Physics, Faculty of Science at New Damietta, Damietta University, New Damietta 34517 (Egypt); El-Denglawey, A. [Physics Department, Faculty of Applied Medical Science at Turabah branch, Taif University, Turabah, 21995 (Saudi Arabia); Physics Department, Faculty of Science, South Valley University, Qena 83523 (Egypt); Zeyada, H.M. [Department of Physics, Faculty of Science at New Damietta, Damietta University, New Damietta 34517 (Egypt); El-Nahass, M.M. [Physics Department, Faculty of Education, Ain Shams University, Cairo (Egypt)

2014-03-15

X-rays diffraction and scanning electron microscope were used to investigate the structural properties of tetraphenylporphyrin, TPP, which is polycrystalline in a synthesized condition. It turns to amorphous structure upon thermal deposition. Annealing temperature ranging from 295 to 473 K does not influence the amorphous structure of films. The optical properties of TPP were investigated using spectrophotometric measurements of the transmittance and reflectance at normal incidence in the wavelength range of 200–2200 nm. The absorption spectra were recorded in UV–visible region of spectra for the as-deposited and annealed samples show different absorption bands, namely four bands labeled as Q-band in visible region of spectra and a more intense band termed as the Soret band in near UV region of spectra. The Soret band shows its splitting (Davydov splitting). Two other bands labeled N and M appear in UV region. The film thickness has no influence on optical properties of films while annealing temperatures have a slight influence on optical properties of TPP films. The type of optical transition in as deposited and annealed conditions of films was found to be indirect allowed band-gap. Both fundamental and onset energy gap decreases upon annealing. -- Highlights: • Tetraphenylporphyrin (TPP) is polycrystalline in powder form, while the as-deposited and annealed TPP thin films have amorphous structure. • The absorption spectra of TPP in UV–visible region consists of Q-bands, Soret band and two other bands labeled N and M. • The optical parameters of TPP thin film were measured. • Thermal annealing influences optical properties of TPP thin films.

The structural and optical characterizations of tetraphenylporphyrin thin films

International Nuclear Information System (INIS)

Makhlouf, M.M.; El-Denglawey, A.; Zeyada, H.M.; El-Nahass, M.M.

2014-01-01

X-rays diffraction and scanning electron microscope were used to investigate the structural properties of tetraphenylporphyrin, TPP, which is polycrystalline in a synthesized condition. It turns to amorphous structure upon thermal deposition. Annealing temperature ranging from 295 to 473 K does not influence the amorphous structure of films. The optical properties of TPP were investigated using spectrophotometric measurements of the transmittance and reflectance at normal incidence in the wavelength range of 200–2200 nm. The absorption spectra were recorded in UV–visible region of spectra for the as-deposited and annealed samples show different absorption bands, namely four bands labeled as Q-band in visible region of spectra and a more intense band termed as the Soret band in near UV region of spectra. The Soret band shows its splitting (Davydov splitting). Two other bands labeled N and M appear in UV region. The film thickness has no influence on optical properties of films while annealing temperatures have a slight influence on optical properties of TPP films. The type of optical transition in as deposited and annealed conditions of films was found to be indirect allowed band-gap. Both fundamental and onset energy gap decreases upon annealing. -- Highlights: • Tetraphenylporphyrin (TPP) is polycrystalline in powder form, while the as-deposited and annealed TPP thin films have amorphous structure. • The absorption spectra of TPP in UV–visible region consists of Q-bands, Soret band and two other bands labeled N and M. • The optical parameters of TPP thin film were measured. • Thermal annealing influences optical properties of TPP thin films

Interleukin-7 Plasma Levels in Human Differentiate Anorexia Nervosa, Constitutional Thinness and Healthy Obesity.

Science.gov (United States)

Germain, Natacha; Viltart, Odile; Loyens, Anne; Bruchet, Céline; Nadin, Katia; Wolowczuk, Isabelle; Estour, Bruno; Galusca, Bogdan

2016-01-01

Interleukin-7 (IL-7) is a cytokine involved in energy homeostasis as demonstrated in rodents. Anorexia nervosa is characterized by restrained eating behavior despite adaptive orexigenic regulation profile including high ghrelin plasma levels. Constitutional thinness is a physiological condition of resistance to weight gain with physiological anorexigenic profile including high Peptide YY plasma level. Healthy obesity can be considered as a physiological state of resistance to weight loss with opposite appetite regulating profile to constitutional thinness including low Peptide YY plasma level. No studies in IL-7 are yet available in those populations. Therefore we evaluated circadian plasma levels of IL-7 in anorexia nervosa compared to constitutional thinness, healthy obese and control females. 10 restrictive-type anorexia nervosa women, 5 bingeing/purging anorexia nervosa woman, 5 recovered restrictive anorexia nervosa women, 4 bulimic females, 10 constitutional thinness women, 7 healthy obese females, and 10 normal weight women controls were enrolled in this cross-sectional study, performed in endocrinology unit and academic laboratory. Twelve-point circadian profiles of plasma IL-7 levels were measured in each subject. 24h mean IL-7 plasma levels (pg/ml, mean±SEM) were decreased in restrictive-type anorexia nervosa (123.4±14.4, panorexia nervosa (24.2±5.6, panorexia nervosa (64.2±16.1, p = 0.01) and healthy obese patients (51±3.2, panorexia nervosa, confirming its difference with constitutional thinness. Healthy obesity, with low IL-7, is once again in mirror image of constitutional thinness with normal high IL-7.

Nonlinear optical parameters of nanocrystalline AZO thin film measured at different substrate temperatures

Energy Technology Data Exchange (ETDEWEB)

Jilani, Asim, E-mail: asim.jilane@gmail.com [Centre of Nanotechnology, King Abdulaziz University, Jeddah (Saudi Arabia); Abdel-wahab, M.Sh [Centre of Nanotechnology, King Abdulaziz University, Jeddah (Saudi Arabia); Materials Science and Nanotechnology Department, Faculty of Postgraduate Studies for Advanced Sciences, Beni -Suef University, Beni-Suef (Egypt); Al-ghamdi, Attieh A. [Centre of Nanotechnology, King Abdulaziz University, Jeddah (Saudi Arabia); Dahlan, Ammar sadik [Department of architecture, faculty of environmental design, King Abdulaziz University, Jeddah (Saudi Arabia); Yahia, I.S. [Department of Physics, Faculty of Science, King Khalid University, P.O. Box 9004, Abha (Saudi Arabia); Nano-Science & Semiconductor Labs, Department of Physics, Faculty of Education, Ain Shams University, Roxy, 11757 Cairo (Egypt)

2016-01-15

The 2.2 wt% of aluminum (Al)-doped zinc oxide (AZO) transparent and preferential c-axis oriented thin films were prepared by using radio frequency (DC/RF) magnetron sputtering at different substrate temperature ranging from room temperature to 200 °C. For structural analysis, X-ray Diffraction (XRD) and Atomic Force Electron Microscope (AFM) was used for morphological studies. The optical parameters such as, optical energy gap, refractive index, extinction coefficient, dielectric loss, tangent loss, first and third order nonlinear optical properties of transparent films were investigated. High transmittance above 90% and highly homogeneous surface were observed in all samples. The substrate temperature plays an important role to get the best transparent conductive oxide thin films. The substrate temperature at 150 °C showed the growth of highly transparent AZO thin film. Energy gap increased with the increased in substrate temperature of Al doped thin films. Dielectric constant and loss were found to be photon energy dependent with substrate temperature. The change in substrate temperature of Al doped thin films also affect the non-liner optical properties of thin films. The value of χ{sup (3)} was found to be changed with the grain size of the thin films that directly affected by the substrate temperature of the pure and Al doped ZnO thin films.

Deposition of thin films and surface modification by pulsed high energy density plasma

International Nuclear Information System (INIS)

Yan Pengxun; Yang Size

2002-01-01

The use of pulsed high energy density plasma is a new low temperature plasma technology for material surface treatment and thin film deposition. The authors present detailed theoretical and experimental studies of the production mechanism and physical properties of the pulsed plasma. The basic physics of the pulsed plasma-material interaction has been investigated. Diagnostic measurements show that the pulsed plasma has a high electron temperature of 10-100 eV, density of 10 14 -10 16 cm -3 , translation velocity of ∼10 -7 cm/s and power density of ∼10 4 W/cm 2 . Its use in material surface treatment combines the effects of laser surface treatment, electron beam treatment, shock wave bombardment, ion implantation, sputtering deposition and chemical vapor deposition. The metastable phase and other kinds of compounds can be produced on low temperature substrates. For thin film deposition, a high deposition ratio and strong film to substrate adhesion can be achieved. The thin film deposition and material surface modification by the pulsed plasma and related physical mechanism have been investigated. Thin film c-BN, Ti(CN), TiN, DLC and AlN materials have been produced successfully on various substrates at room temperature. A wide interface layer exists between film and substrate, resulting in strong adhesion. Metal surface properties can be improved greatly by using this kind of treatment

Research on precision grinding technology of large scale and ultra thin optics

Science.gov (United States)

Zhou, Lian; Wei, Qiancai; Li, Jie; Chen, Xianhua; Zhang, Qinghua

2018-03-01

The flatness and parallelism error of large scale and ultra thin optics have an important influence on the subsequent polishing efficiency and accuracy. In order to realize the high precision grinding of those ductile elements, the low deformation vacuum chuck was designed first, which was used for clamping the optics with high supporting rigidity in the full aperture. Then the optics was planar grinded under vacuum adsorption. After machining, the vacuum system was turned off. The form error of optics was on-machine measured using displacement sensor after elastic restitution. The flatness would be convergenced with high accuracy by compensation machining, whose trajectories were integrated with the measurement result. For purpose of getting high parallelism, the optics was turned over and compensation grinded using the form error of vacuum chuck. Finally, the grinding experiment of large scale and ultra thin fused silica optics with aperture of 430mm×430mm×10mm was performed. The best P-V flatness of optics was below 3 μm, and parallelism was below 3 ″. This machining technique has applied in batch grinding of large scale and ultra thin optics.

Electrical and optical properties of spray - deposited CdSe thin films

International Nuclear Information System (INIS)

Bedir, M.; Oeztas, M.; Bakkaloglu, O. F.

2002-01-01

The CdSe thin films were developed by using spray-deposition technique at different substrate temperatures of 380C, 400C and, 420C on the glass substrate. All spraying processes involved CdCI 2 (0.05 moles/liter) and SeO 2 (0.05 moles/liter ) and were carried out in atmospheric condition. The CdSe thin film samples were characterized using x-ray diffractometer and optical absorption measurements. The electrical properties of the thin film samples were investigated via Wander Pauw method. XRD patterns indicated that the CdSe thin film samples have a hexagonal structure. The direct band gap of the CdSe thin film samples were determined from optical absorption and spectral response measurements of 1.76 eV. The resistivity of the CdSe thin film samples were found to vary in the range from 5.8x10''5 to 7.32x10''5 Ωcm depending to the substrate temperature

Growth of KNN thin films for non-linear optical applications

International Nuclear Information System (INIS)

Sharma, Shweta; Gupta, Reema; Gupta, Vinay; Tomar, Monika

2018-01-01

Two-wave mixing is a remarkable area of research in the field of non-linear optics, finding various applications in the development of opto-electronic devices, photorefractive waveguides, real time holography, etc. Non-linear optical properties of ferroelectric potassium sodium niobate (KNN) thin films have been interrogated using two-wave mixing phenomenon. Regarding this, a-axis oriented K 0.35 Na (1-0.35) NbO 3 thin films were successfully grown on epitaxial matched (100) SrTiO 3 substrate using pulsed laser deposition (PLD) technique. The uniformly distributed Au micro-discs of 200 μm diameter were integrated with KNN/STO thin film to study the plasmonic enhancement in the optical response. Beam amplification has been observed as a result of the two-wave mixing. This is due to the alignment of ferroelectric domains in KNN films and the excitement of plasmons at the metal-dielectric (Au-KNN) interface. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Growth of KNN thin films for non-linear optical applications

Energy Technology Data Exchange (ETDEWEB)

Sharma, Shweta; Gupta, Reema; Gupta, Vinay [Department of Physics and Astrophysics, University of Delhi (India); Tomar, Monika [Department of Physics, Miranda House University of Delhi (India)

2018-02-15

Two-wave mixing is a remarkable area of research in the field of non-linear optics, finding various applications in the development of opto-electronic devices, photorefractive waveguides, real time holography, etc. Non-linear optical properties of ferroelectric potassium sodium niobate (KNN) thin films have been interrogated using two-wave mixing phenomenon. Regarding this, a-axis oriented K{sub 0.35}Na{sub (1-0.35)}NbO{sub 3} thin films were successfully grown on epitaxial matched (100) SrTiO{sub 3} substrate using pulsed laser deposition (PLD) technique. The uniformly distributed Au micro-discs of 200 μm diameter were integrated with KNN/STO thin film to study the plasmonic enhancement in the optical response. Beam amplification has been observed as a result of the two-wave mixing. This is due to the alignment of ferroelectric domains in KNN films and the excitement of plasmons at the metal-dielectric (Au-KNN) interface. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Plasma Channel Lenses and Plasma Tornadoes for Optical Beam Focusing and Transport

Science.gov (United States)

Hubbard, R. F.; Kaganovich, D.; Johnson, L. A.; Gordon, D. F.; Penano, J. R.; Hafizi, B.; Helle, M. H.; Mamonau, A. A.

2017-10-01

Shaped plasmas offer the possibility of manipulating laser pulses at intensities far above the damage limits for conventional optics. An example is the plasma channel, which is a cylindrical plasma column with an on-axis density minimum. Long plasma channels have been widely used to guide intense laser pulses, particularly in laser wakefield accelerators. A new concept, the ``plasma tornado'', offers the possibility of creating long plasma channels with no nearby structures and at densities lower than can be achieved by capillary discharges. A short plasma channel can focus a laser pulse in much the same manner as a conventional lens or off-axis parabola. When placed in front of the focal point of an intense laser pulse, a plasma channel lens (PCL) can reduce the effective f-number of conventional focusing optics. When placed beyond the focal point, it can act as a collimator. We will present experimental and modeling results for a new plasma tornado design, review experimental methods for generating short PCLs, and discuss potential applications. Supported by the Naval Research Laboratory Base Program.

Basic characteristics of thin wire arc plasma

International Nuclear Information System (INIS)

Urushihara, K.; Endoh, N.; Ono, S.; Teii, S.; Ishimura, T.

1998-01-01

The investigated plasma was generated by applying an electric current of about 50 A to a copper wire of 48 μm diameter in air. The development in time of emission spectra was measured and relative line intensity ratios were used to determine the temperature. The extension of the plasma was measured with a movable electrostatic probe which was placed next to the thin wire, and the electron density was estimated using the known electron mobility. The electron temperature was typically about 8000 K. On the other hand, the electron density tended to decrease with time from about 3.10 16 cm -3

Enhancement of gas sensor response of nanocrystalline zinc oxide for ammonia by plasma treatment

International Nuclear Information System (INIS)

Hou, Yue; Jayatissa, Ahalapitiya H.

2014-01-01

The effect of oxygen plasma treatment on nanocrystalline ZnO thin film based gas sensor was investigated. ZnO thin films were synthesized on alkali-free glass substrates by a sol–gel process. ZnO thin films were treated with oxygen plasma to change the number of vacancies/defects in ZnO. The effect of oxygen plasma on the structural, electrical, optical and gas sensing properties was investigated as a function of plasma treatment time. The results suggest that the microstructure and the surface morphology can be tuned by oxygen plasma treatment. The optical transmission in the visible range varies after the oxygen plasma treatment. Moreover, it is found that the oxygen plasma has significant impact on the electrical properties of ZnO thin films indicating a variation of resistivity. The oxygen plasma treated ZnO thin film exhibits an enhanced sensing response towards NH 3 in comparison with that of the as-deposited ZnO sensor. When compared with the as-deposited ZnO film, the sensing response was improved by 50% for the optimum oxygen plasma treatment time of 8 min. The selectivity of 8 min plasma treated ZnO sensor was also examined for an important industrial gas mixture of H 2 , CH 4 and NH 3 .

Fixation of the stressed state of glass plates by coating them with thin films using a plasma focus installation

Science.gov (United States)

Kolokoltsev, V. N.; Degtiarev, V. F.; Borovitskaya, I. V.; Nikulin, V. Ya.; Peregudova, E. N.; Silin, P. V.; Eriskin, A. A.

2018-01-01

Elastic deformation in transparent mediums is usually studied by the photoelasticity method. For opaque mediums the method of film coating and strain gauge method are used. After the external load was removed, the interference pattern corresponding to elastic deformation of the material disappears. It is found that the elastic deformation state of the thin glass plate under the action of concentrated load can be fixed during the deposition of a thin metal film. Deposition of thin copper films was carried out by passing of plasma through the copper tube installed inside the Plasma Focus installation. After removing of the load, interference pattern on the glass plates was observed in the form of Newton’s rings and isogers in non-monochromatic light on the CCD scanners which uses uorescent lamps with cold cathode. It is supposed that the copper film fixes the relief of the surface of the glass plate at the time of deformation and saves it when the load is removed. In the case of a concentrated load, this relief has the shape of a thin lens of large radius. For this reason, the interference of coherent light rays in a thin air gap between the glass of the scanners atbed and the lens surface has the shape of Newton's rings. In this case, when scanning the back side of the plate, isogyres are observed. The presented method can be used in the analysis of the mechanical stress in a various optical elements.

Dispersion properties of plasma cladded annular optical fiber

Science.gov (United States)

KianiMajd, M.; Hasanbeigi, A.; Mehdian, H.; Hajisharifi, K.

2018-05-01

One of the considerable problems in a conventional image transferring fiber optic system is the two-fold coupling of propagating hybrid modes. In this paper, using a simple and practical analytical approach based on exact modal vectorial analysis together with Maxwell's equations, we show that applying plasma as a cladding medium of an annular optical fiber can remove this defect of conventional fiber optic automatically without any external instrument as the polarization beam splitter. Moreover, the analysis indicates that the presence of plasma in the proposed optical fiber could extend the possibilities for controlling the propagation property. The proposed structure presents itself as a promising route to advanced optical processing and opens new avenues in applied optics and photonics.

Modeling plasma behavior in a plasma electrode Pockels cell

International Nuclear Information System (INIS)

Boley, C.D.; Rhodes, M.A.

1999-01-01

The authors present three interrelated models of plasma behavior in a plasma electrode Pockels cell (PEPC). In a PEPC, plasma discharges are formed on both sides of a thin, large-aperture electro-optic crystal (typically KDP). The plasmas act as optically transparent, highly conductive electrodes, allowing uniform application of a longitudinal field to induce birefringence in the crystal. First, they model the plasma in the thin direction, perpendicular to the crystal, via a one-dimensional fluid model. This yields the electron temperature and the density and velocity profiles in this direction as functions of the neutral pressure, the plasma channel width, and the discharge current density. Next, they model the temporal response of the crystal to the charging process, combining a circuit model with a model of the sheath which forms near the crystal boundary. This model gives the time-dependent voltage drop across the sheath as a function of electron density at the sheath entrance. Finally, they develop a two-dimensional MHD model of the planar plasma, in order to calculate the response of the plasma to magnetic fields. They show how the plasma uniformity is affected by the design of the current return, by the longitudinal field from the cathode magnetron, and by fields from other sources. This model also gives the plasma sensitivity to the boundary potential at which the top and bottom of the discharge are held. They validate these models by showing how they explain observations in three large Pockels cells built at Lawrence Livermore National Laboratory

Optical diagnostics of atmospheric pressure air plasmas

International Nuclear Information System (INIS)

Laux, C O; Spence, T G; Kruger, C H; Zare, R N

2003-01-01

Atmospheric pressure air plasmas are often thought to be in local thermodynamic equilibrium owing to fast interspecies collisional exchange at high pressure. This assumption cannot be relied upon, particularly with respect to optical diagnostics. Velocity gradients in flowing plasmas and/or elevated electron temperatures created by electrical discharges can result in large departures from chemical and thermal equilibrium. This paper reviews diagnostic techniques based on optical emission spectroscopy and cavity ring-down spectroscopy that we have found useful for making temperature and concentration measurements in atmospheric pressure plasmas under conditions ranging from thermal and chemical equilibrium to thermochemical nonequilibrium

Cathode and ion-luminescence of Eu:ZnO thin films prepared by reactive magnetron sputtering and plasma decomposition of non-volatile precursors

Energy Technology Data Exchange (ETDEWEB)

Gil-Rostra, Jorge [Instituto de Ciencia de Materiales de Sevilla, CSIC, Univ. Sevilla, C/Américo Vespucio 49, E-41092 Sevilla (Spain); Ferrer, Francisco J. [Centro Nacional de Aceleradores, CSIC, Univ. Sevilla, Av. Thomas A. Edison 7, E-41092 Sevilla (Spain); Martín, Inocencio R. [Departamento de Física Fundamental y Experimental, Electrónica y Sistemas, U. La Laguna, C/Astrofísico Francisco Sánchez s/n, E-38206 La Laguna, Santa Cruz de Tenerife (Spain); González-Elipe, Agustín R.; Yubero, Francisco [Instituto de Ciencia de Materiales de Sevilla, CSIC, Univ. Sevilla, C/Américo Vespucio 49, E-41092 Sevilla (Spain)

2016-10-15

This paper reports the luminescent behavior of Eu:ZnO thin films prepared by an one-step procedure that combines reactive magnetron sputtering deposition of ZnO with the plasma activated decomposition of a non-volatile acetylacetonate precursor of Eu sublimated in an effusion cell. Chemical composition and microstructure of the Eu:ZnO thin films have been characterized by several methods and their photo-, cathode- and ion-luminescent properties studied as a function of Eu concentration. The high transparency and well controlled optical properties of the films have demonstrated to be ideal for the development of cathode- and ion- luminescence sensors.

Effects of phosphorus doping by plasma immersion ion implantation on the structural and optical characteristics of Zn{sub 0.85}Mg{sub 0.15}O thin films

Energy Technology Data Exchange (ETDEWEB)

Saha, S.; Nagar, S.; Chakrabarti, S., E-mail: subho@ee.iitb.ac.in [Department of Electrical Engineering, Indian Institute of Technology Bombay, Powai, Mumbai 400076 (India)

2014-08-11

ZnMgO thin films deposited on 〈100〉 Si substrates by RF sputtering were annealed at 800, 900, and 1000 °C after phosphorus plasma immersion ion implantation. X-ray diffraction spectra confirmed the presence of 〈101{sup ¯}0〉 and 〈101{sup ¯}3〉 peaks for all the samples. However, in case of the annealed samples, the 〈0002〉 peak was also observed. Scanning electron microscopy images revealed the variation in surface morphology caused by phosphorus implantation. Implanted and non-implanted samples were compared to examine the effects of phosphorus implantation on the optical properties of ZnMgO. Optical characteristics were investigated by low-temperature (15 K) photoluminescence experiments. Inelastic exciton–exciton scattering and localized, and delocalized excitonic peaks appeared at 3.377, 3.42, and 3.45 eV, respectively, revealing the excitonic effect resulting from phosphorus implantation. This result is important because inelastic exciton–exciton scattering leads to nonlinear emission, which can improve the performance of many optoelectronic devices.

Enhanced Visible Transmittance of Thermochromic VO2 Thin Films by SiO2 Passivation Layer and Their Optical Characterization

Directory of Open Access Journals (Sweden)

Jung-Hoon Yu

2016-07-01

Full Text Available This paper presents the preparation of high-quality vanadium dioxide (VO2 thermochromic thin films with enhanced visible transmittance (Tvis via radio frequency (RF sputtering and plasma enhanced chemical vapor deposition (PECVD. VO2 thin films with high Tvis and excellent optical switching efficiency (Eos were successfully prepared by employing SiO2 as a passivation layer. After SiO2 deposition, the roughness of the films was decreased 2-fold and a denser structure was formed. These morphological changes corresponded to the results of optical characterization including the haze, reflectance and absorption spectra. In spite of SiO2 coating, the phase transition temperature (Tc of the prepared films was not affected. Compared with pristine VO2, the total layer thickness after SiO2 coating was 160 nm, which is an increase of 80 nm. Despite the thickness change, the VO2 thin films showed a higher Tvis value (λ 650 nm, 58% compared with the pristine samples (λ 650 nm, 43%. This enhancement of Tvis while maintaining high Eos is meaningful for VO2-based smart window applications.

Recent progress in thin film processing by magnetron sputtering with plasma diagnostics

International Nuclear Information System (INIS)

Han, Jeon G

2009-01-01

The precise control of the structure and related properties becomes crucial for sophisticated applications of thin films deposited by magnetron sputtering in emerging industries including the flat panel display, digital electronics and nano- and bio-industries. The film structure is closely related to the total energy delivered to the substrate surface for nucleation and growth during all kinds of thin film processes, including magnetron sputtering. Therefore, the energy delivered to the surface for nucleation and growth during magnetron sputtering should be measured and analysed by integrated diagnostics of the plasma parameters which are closely associated with the process parameters and other external process conditions. This paper reviews the background of thin film nucleation and growth, the status of magnetron sputtering technology and the progress of plasma diagnostics for plasma processing. The evolution of the microstructure during magnetron sputtering is then discussed with respect to the change in the process variables in terms of the plasma parameters along with empirical data of the integrated plasma diagnostics for various magnetron sputtering conditions with conventional dc, pulsed dc and high power pulsed dc sputtering modes. Among the major energy terms to be discussed are the temperature change in the top surface region and the energies of ions and neutral species. (topical review)

Infrared analysis of thin films amorphous, hydrogenated carbon on silicon

CERN Document Server

Jacob, W; Schwarz-Selinger, T

2000-01-01

The infrared analysis of thin films on a thick substrate is discussed using the example of plasma-deposited, amorphous, hydrogenated carbon layers (a-C:H) on silicon substrates. The framework for the optical analysis of thin films is presented. The main characteristic of thin film optics is the occurrence of interference effects due to the coherent superposition of light multiply reflected at the various internal and external interfaces of the optical system. These interference effects lead to a sinusoidal variation of the transmitted and reflected intensity. As a consequence, the Lambert-Beer law is not applicable for the determination of the absorption coefficient of thin films. Furthermore, observable changes of the transmission and reflection spectra occur in the vicinity of strong absorption bands due to the Kramers-Kronig relation. For a sound data evaluation these effects have to be included in the analysis. To be able to extract the full information contained in a measured optical thin film spectrum, ...

Defect enhanced optic and electro-optic properties of lead zirconate titanate thin films

Directory of Open Access Journals (Sweden)

M. M. Zhu

2011-12-01

Full Text Available Pb(Zr1-xTixO3 (PZT thin films near phase morphotropic phase boundary were deposited on (Pb0.86La0.14TiO3-coated glass by radio frequency sputtering. A retrieved analysis shows that the lattice parameters of the as-grown PZT thin films were similar to that of monoclinic PZT structure. Moreover, the PZT thin films possessed refractive index as high as 2.504 in TE model and 2.431 in TM model. The as-grown PZT thin film had one strong absorption peak at 632.6 nm, which attributed to lead deficiency by quantitative XPS analysis. From the attractive properties achieved, electro-optic and photovoltaic characteristic of the films were carried out.

synthesis and optical characterization of acid-doped polyaniline thin

African Journals Online (AJOL)

HOD

SYNTHESIS AND OPTICAL CHARACTERIZATION OF ACID-DOPED. POLYANILINE THIN .... MATERIALS AND METHODS .... Characterization of Se Doped Polyaniline”,Current. Applied ... with Silver Nanoparticles”, Advances in Materials.

Effect of O2 plasma immersion on electrical properties and transistor performance of indium gallium zinc oxide thin films

International Nuclear Information System (INIS)

Liu, P.; Chen, T.P.; Liu, Z.; Tan, C.S.; Leong, K.C.

2013-01-01

Evolution of electrical properties and thin-film transistor characteristics of amorphous indium gallium zinc oxide (IGZO) thin films synthesized by RF sputtering with O 2 plasma immersion has been examined. O 2 plasma immersion results in an enhancement in the Hall mobility and a decrease in the electron concentration; and the transistor performance can be greatly improved by the O 2 plasma immersion. X-ray photoelectron spectroscopy analysis indicates that the effect of O 2 plasma immersion on the electrical properties and the transistor performance can be attributed to the reduction of the oxygen-related defects in the IGZO thin films. - Highlights: • Oxygen plasma immersion effect on indium gallium zinc oxide thin film properties • Oxygen-related defect reduces in the InGaZnO thin film with oxygen plasma immersion. • Increasing oxygen plasma immersion duration on device will decrease the off current. • Oxygen plasma immersion enhances the performance of device

Layer-by-layer thinning of MoSe{sub 2} by soft and reactive plasma etching

Energy Technology Data Exchange (ETDEWEB)

Sha, Yunfei [Engineering Research Center of IoT Technology Applications (Ministry of Education), Department of Electronic Engineering, Jiangnan University, Wuxi 214122 (China); Xiao, Shaoqing, E-mail: larring0078@hotmail.com [Engineering Research Center of IoT Technology Applications (Ministry of Education), Department of Electronic Engineering, Jiangnan University, Wuxi 214122 (China); Zhang, Xiumei [Engineering Research Center of IoT Technology Applications (Ministry of Education), Department of Electronic Engineering, Jiangnan University, Wuxi 214122 (China); Qin, Fang [Analysis & Testing Center, Jiangnan University, Wuxi 214122 (China); Gu, Xiaofeng, E-mail: xfgu@jiangnan.edu.cn [Engineering Research Center of IoT Technology Applications (Ministry of Education), Department of Electronic Engineering, Jiangnan University, Wuxi 214122 (China)

2017-07-31

Highlights: • Soft plasma etching technique using SF{sub 6} + N{sub 2} as precursors for layer-by-layer thinning of MoSe{sub 2} was adopted in this work. • Optical microscopy, Raman, photoluminescence and atomic force microscopy measurements were used to confirm the thickness change. • Layer-dependent vibrational and photoluminescence spectra of the etched MoSe{sub 2} were also demonstrated. • Equal numbers of MoSe{sub 2} layers can be removed uniformly without affecting the underlying SiO{sub 2} substrate and the remaining MoSe{sub 2} layers. - Abstract: Two-dimensional (2D) transition metal dichalcogenides (TMDs) like molybdenum diselenide (MoSe{sub 2}) have recently gained considerable interest since their properties are complementary to those of graphene. Unlike gapless graphene, the band structure of MoSe{sub 2} can be changed from the indirect band gap to the direct band gap when MoSe{sub 2} changed from bulk material to monolayer. This transition from multilayer to monolayer requires atomic-layer-precision thining of thick MoSe{sub 2} layers without damaging the remaining layers. Here, we present atomic-layer-precision thinning of MoSe{sub 2} nanaosheets down to monolayer by using SF{sub 6} + N{sub 2} plasmas, which has been demonstrated to be soft, selective and high-throughput. Optical microscopy, atomic force microscopy, Raman and photoluminescence spectra suggest that equal numbers of MoSe{sub 2} layers can be removed uniformly regardless of their initial thickness, without affecting the underlying SiO{sub 2} substrate and the remaining MoSe{sub 2} layers. By adjusting the etching rates we can achieve complete MoSe{sub 2} removal and any disired number of MoSe{sub 2} layers including monolayer. This soft plasma etching method is highly reliable and compatible with the semiconductor manufacturing processes, thereby holding great promise for various 2D materials and TMD-based devices.

Pulsed laser deposited Al-doped ZnO thin films for optical applications

Directory of Open Access Journals (Sweden)

Gurpreet Kaur

2015-02-01

Full Text Available Highly transparent and conducting Al-doped ZnO (Al:ZnO thin films were grown on glass substrates using pulsed laser deposition technique. The profound effect of film thickness on the structural, optical and electrical properties of Al:ZnO thin films was observed. The X-ray diffraction depicts c-axis, plane (002 oriented thin films with hexagonal wurtzite crystal structure. Al-doping in ZnO introduces a compressive stress in the films which increase with the film thickness. AFM images reveal the columnar grain formation with low surface roughness. The versatile optical properties of Al:ZnO thin films are important for applications such as transparent electromagnetic interference (EMI shielding materials and solar cells. The obtained optical band gap (3.2–3.08 eV was found to be less than pure ZnO (3.37 eV films. The lowering in the band gap in Al:ZnO thin films could be attributed to band edge bending phenomena. The photoluminescence spectra gives sharp visible emission peaks, enables Al:ZnO thin films for light emitting devices (LEDs applications. The current–voltage (I–V measurements show the ohmic behavior of the films with resistivity (ρ~10−3 Ω cm.

Orienting Block Copolymer Thin Films via Entropy and Surface Plasma Treatment

Science.gov (United States)

Ho, Rong-Ming; Lu, Kai-Yuan; Lo, Ting-Ya; Dehghan, Ashkan; Shi, An-Chang; Prokopios, Georgopanos; Avgeropoulos, Apostolos

Controlling the orientation of nanostructured thin films of block copolymers (BCPs) is essential for next generation lithography. In the thin-film state, how to achieve the perpendicular orientation of the nanostructured microdomains remains challenging due to the interfacial effects from the air and also the substrate, especially for the blocks with silicon containing segments which usually have different surface energies, favoring parallel microdomain orientation. Here, we show that entropic effect can be used to control the orientation of BCP thin films. Specifically, we used the architecture of star-block copolymers consisting of polystyrene (PS) and poly(dimethylsiloxane) (PDMS) blocks to regulate the entropic contribution to the self-assembled nanostructures. Moreover, we aim to achieve the formation of perpendicular orientation from the air surface via surface plasma treatment to neutralize the interfacial energy difference. By combining the architecture effect (entropy effect) on BCP self-assembly and the surface plasma treatment (enthalpy effect), well-defined perpendicular PDMS microdomains in the PS-b-PDMS thin film can be formed from the bottom of non-neutral substrate and the top of the thin film surface, giving great potential for lithographic applications.

Application of femtosecond laser ablation inductively coupled plasma mass spectrometry for quantitative analysis of thin Cu(In,Ga)Se{sub 2} solar cell films

Energy Technology Data Exchange (ETDEWEB)

Lee, Seokhee [School of Mechatronics, Gwangju Institute of Science and Technology, 1 Oryong-dong, Buk-gu, Gwangju 500-712 (Korea, Republic of); Gonzalez, Jhanis J. [Lawrence Berkeley National Laboratory, 1 Cyclotron Road, Berkeley, CA 94720 (United States); Applied Spectra Inc., 46665 Fremont Boulevard, Fremont, CA 94538 (United States); Yoo, Jong H. [Applied Spectra Inc., 46665 Fremont Boulevard, Fremont, CA 94538 (United States); Chirinos, Jose R. [Lawrence Berkeley National Laboratory, 1 Cyclotron Road, Berkeley, CA 94720 (United States); Facultad de Ciencias, Universidad Central de Venezuela, Caracas 1041A (Venezuela, Bolivarian Republic of); Russo, Richard E. [Lawrence Berkeley National Laboratory, 1 Cyclotron Road, Berkeley, CA 94720 (United States); Applied Spectra Inc., 46665 Fremont Boulevard, Fremont, CA 94538 (United States); Jeong, Sungho, E-mail: shjeong@gist.ac.kr [School of Mechatronics, Gwangju Institute of Science and Technology, 1 Oryong-dong, Buk-gu, Gwangju 500-712 (Korea, Republic of)

2015-02-27

This work reports that the composition of Cu(In,Ga)Se{sub 2} (CIGS) thin solar cell films can be quantitatively predicted with high accuracy and precision by femtosecond laser ablation-inductively coupled plasma-mass spectrometry (fs-LA-ICP-MS). It is demonstrated that the results are strongly influenced by sampling conditions during fs-laser beam (λ = 1030 nm, τ = 450 fs) scanning on the CIGS surface. The fs-LA-ICP-MS signals measured at optimal sampling conditions generally provide a straight line calibration with respect to the reference concentrations measured by inductively coupled plasma optical emission spectroscopy (ICP-OES). The concentration ratios predicted by fs-LA-ICP-MS showed high accuracy, to 95–97% of the values measured with ICP-OES, for Cu, In, Ga, and Se elements. - Highlights: • Laser ablation inductively coupled plasma mass spectrometry of thin film is reported. • Concentration ratio prediction with a confidence level of 95–97% is achieved. • Quantitative determination of composition is demonstrated.

Thin film plasma coatings from dielectric free-flowing materials

International Nuclear Information System (INIS)

Timofeeva, L.A.; Katrich, S.A.; Solntsev, L.A.

1994-01-01

Fabrication of thin film plasma coatings from insulating free-flowing materials is considered. Molybdenum-tart ammonium coating of 3...5 μ thickness deposited on glassy carbon, aluminium, silicon, nickel, cast iron and steel substrates in 'Bulat-ZT' machine using insulating free-flowing materials cathod was found to form due to adsorption, absorption and dissuasion processes. The use of insulating free-flowing materials coatings allow to exclude pure metals cathods in plasma-plating process

Optical spectroscopy, optical conductivity, dielectric properties and new methods for determining the gap states of CuSe thin films

International Nuclear Information System (INIS)

Sakr, G.B.; Yahia, I.S.; Fadel, M.; Fouad, S.S.; Romcevic, N.

2010-01-01

Research highlights: → The structural, optical dispersion parameters and the Raman spectroscopy have been studied for CuSe thin films. → X-ray diffraction results indicate the amorphous nature of the thermally evaporated CuSe thin films. → The refractive index shows an anomalous dispersion at the lower wavelength (absorption region) and a normal dispersion at the higher wavelengths (transparent region). → The refractive index dispersion obeys the single oscillator model proposed by Wemple and DiDomenico WDD model and the single oscillator parameters were determined. → The band gap of CuSe thin films was determined by three novel methods i.e. (relaxation time, real and imaginary dielectric constant and real and imaginary optical conductivity) which in a good agreement with the Tauc band gap value. - Abstract: The paper describes the structural and optical properties of CuSe thin films. X-ray diffraction pattern indicates that CuSe thin film has an amorphous structure. Transmittance T(λ) and reflectance R(λ) measurements in the wavelength range (300-1700 nm) were used to calculate the refractive index n(λ), the absorption index and the optical dispersion parameters according to Wemple and Didomenico WDD model. The dispersion curve of the refractive index shows an anomalous dispersion in the absorption region and a normal dispersion in the transparent region. The optical bandgap has been estimated and confirmed by four different methods. The value for the direct bandgap for the as-deposited CuSe thin film approximately equals 2.7 eV. The Raman spectroscopy was used to identify and quantify the individual phases presented in the CuSe films.

Optical switching and photoluminescence in erbium-implanted vanadium dioxide thin films

Energy Technology Data Exchange (ETDEWEB)

Lim, Herianto, E-mail: mail@heriantolim.com; Stavrias, Nikolas; Johnson, Brett C.; McCallum, Jeffrey C. [School of Physics, University of Melbourne, Parkville, Victoria 3010 (Australia); Marvel, Robert E.; Haglund, Richard F. [Department of Physics and Astronomy, Vanderbilt University, Nashville, Tennessee 37240 (United States)

2014-03-07

Vanadium dioxide (VO{sub 2}) is under intensive consideration for optical switching due to its reversible phase transition, which features a drastic and rapid shift in infrared reflectivity. Classified as an insulator–to–metal transition, the phase transition in VO{sub 2} can be induced thermally, electrically, and optically. When induced optically, the transition can occur on sub-picosecond time scales. It is interesting to dope VO{sub 2} with erbium ions (Er{sup 3+}) and observe their combined properties. The first excited-state luminescence of Er{sup 3+} lies within the wavelength window of minimal transmission-loss in silicon and has been widely utilized for signal amplification and generation in silicon photonics. The incorporation of Er{sup 3+} into VO{sub 2} could therefore result in a novel photonic material capable of simultaneous optical switching and amplification. In this work, we investigate the optical switching and photoluminescence in Er-implanted VO{sub 2} thin films. Thermally driven optical switching is demonstrated in the Er-implanted VO{sub 2} by infrared reflectometry. Photoluminescence is observed in the thin films annealed at ∼800 °C or above. In addition, Raman spectroscopy and a statistical analysis of switching hysteresis are carried out to assess the effects of the ion implantation on the VO{sub 2} thin films. We conclude that Er-implanted VO{sub 2} can function as an optical switch and amplifier, but with reduced switching quality compared to pure VO{sub 2}.

Structural, morphological and optical properties of thermal annealed TiO thin films

International Nuclear Information System (INIS)

Zribi, M.; Kanzari, M.; Rezig, B.

2008-01-01

Structural, morphological and optical properties of TiO thin films grown by single source thermal evaporation method were studied. The films were annealed from 300 to 520 deg. C in air after evaporation. Qualitative film analysis was performed with X-ray diffraction, atomic force microscopy and optical transmittance and reflectance spectra. A correlation was established between the optical properties, surface roughness and growth morphology of the evaporated TiO thin films. The X-ray diffraction spectra indicated the presence of the TiO 2 phase for the annealing temperature above 400 deg. C

The Electrical Properties of Plasma-Deposited Thin Films Derived from Pelargonium graveolens

Directory of Open Access Journals (Sweden)

Ahmed Al-Jumaili

2017-10-01

Full Text Available Inherently volatile at atmospheric pressure and room temperature, plant-derived precursors present an interesting human-health-friendly precursor for the chemical vapour deposition of thin films. The electrical properties of films derived from Pelargonium graveolens (geranium were investigated in metal–insulator–metal (MIM structures. Thin polymer-like films were deposited using plasma-enhanced synthesis under various plasma input power. The J–V characteristics of thus-fabricated MIM were then studied in order to determine the direct current (DC conduction mechanism of the plasma polymer layers. It was found that the capacitance of the plasma-deposited films decreases at low frequencies (C ≈ 10−11 and remains at a relatively constant value (C ≈ 10−10 at high frequencies. These films also have a low dielectric constant across a wide range of frequencies that decreases as the input RF power increases. The conductivity was determined to be around 10−16–10−17 Ω−1 m−1, which is typical for insulating materials. The Richardson–Schottky mechanism might dominate charge transport in the higher field region for geranium thin films.

Optical characterization of thin solid films

CERN Document Server

Ohlídal, Miloslav

2018-01-01

This book is an up-to-date survey of the major optical characterization techniques for thin solid films. Emphasis is placed on practicability of the various approaches. Relevant fundamentals are briefly reviewed before demonstrating the application of these techniques to practically relevant research and development topics. The book is written by international top experts, all of whom are involved in industrial research and development projects.

Optical coupling between atomically thin black phosphorus and a two dimensional photonic crystal nanocavity

Science.gov (United States)

Ota, Yasutomo; Moriya, Rai; Yabuki, Naoto; Arai, Miho; Kakuda, Masahiro; Iwamoto, Satoshi; Machida, Tomoki; Arakawa, Yasuhiko

2017-05-01

Atomically thin black phosphorus (BP) is an emerging two dimensional (2D) material exhibiting bright photoluminescence in the near infrared region. Coupling its radiation to photonic nanostructures will be an important step toward the realization of 2D material based nanophotonic devices that operate efficiently in the near infrared region, which includes the technologically important optical telecommunication wavelength bands. In this letter, we demonstrate the optical coupling between atomically thin BP and a 2D photonic crystal nanocavity. We employed a home-build dry transfer apparatus for placing a thin BP flake on the surface of the nanocavity. Their optical coupling was analyzed through measuring cavity mode emission under optical carrier injection at room temperature.

Preparation and optical properties of gold-dispersed BaTiO3 thin films

Energy Technology Data Exchange (ETDEWEB)

Kineri, T; Mori, M [TDK Corp., Tokyo (Japan). R and D Center; Kadono, K; Sakaguchi, T; Miya, M; Wakabayashi, H [Osaka National Research Inst., Osaka (Japan); Tsuchiya, T [Science Univ. of Tokyo, Tokyo (Japan). Faculty of Industrial Science and Technology

1993-12-01

Recently, metal or semiconductor-doped glasses were widely studied because of their large resonant third-order nonlinearity. These glasses are utilized in an optical information field as all optical logic devices in the future. The gold-doped glass films or thin layers have a large third-order nonlinear susceptibility [chi] and are prepared by r.f. sputtering method, etc. The optical properties, particularly the refractive index or dielectric constant of the matrix, are very important for the optical nonlinearity of these materials. In this study, gold-dispersed BaTiO3 thin films and gold-dispersed SiO2 thin films are prepared using r.f. magnetron sputtering method, and the optical properties of the films are compared. The [chi] of the films are measured and the effect of the matrix of the films on [chi] is investigated. The headings in the paper are: Introduction, Experimental procedure, Results, Discussion, and Conclusion. 13 refs., 9 figs.

Bremsstrahlung radiation of a plasma expanding into vacuum

International Nuclear Information System (INIS)

Grigor'ev, V.G.; Silakov, V.P.; Fetisov, V.S.

1978-01-01

Bremsstrahlung of a flat layer of a dense hot homogeneous plasma expanding to vacuum is considered. The spread of plasma is assumed to be adiabatic, and the plasma density and temperature are considered as known functions of coordinates and time in the radiation transport equation. Formulae for radiation intensity have been obtained in cases when the plasma layer covered by the rarefaction wave are optically thin and optically thick. The dependences of radiation intensity on the parameter α characterizing the optical thickness of the plasma layer and the spectrum of radiation of the spreading layer are presented graphically. It is shown that spread has an essential effect on the heat transfer and the spectral composition of the bremsstrahlung of a dense high-temperature plasma

Thickness and microstructure effects in the optical and electrical properties of silver thin films

Energy Technology Data Exchange (ETDEWEB)

Ding, Guowen, E-mail: gding@intermolecular.com; Clavero, César; Schweigert, Daniel; Le, Minh [Intermolecular, Inc., 3011 North First Street, San Jose, CA 95134 (United States)

2015-11-15

The optical and electrical response of metal thin films approaching thicknesses in the range of the electron mean free path is highly affected by electronic scattering with the interfaces and defects. Here, we present a theoretical and experimental study on how thickness and microstructure affect the properties of Ag thin films. We are able to successfully model the electrical resistivity and IR optical response using a thickness dependent electronic scattering time. Remarkably, the product of electronic scattering time and resistivity remains constant regardless of the thickness (τx ρ = C), with a value of 59 ± 2 μΩ cm ⋅ fs for Ag films in the investigated range from 3 to 74 nm. Our findings enable us to develop a theoretically framework that allows calculating the optical response of metal thin films in the IR by using their measured thickness and resistivity. An excellent agreement is found between experimental measurements and predicted values. This study also shows the theoretical lower limit for emissivity in Ag thin films according to their microstructure and thickness. Application of the model presented here will allow rapid characterization of the IR optical response of metal thin films, with important application in a broad spectrum of fundamental and industrial applications, including optical coatings, low-emissivity windows and semiconductor industry.

Thin Films for X-ray Optics

Science.gov (United States)

Conley, Raymond

Focusing x-rays with refraction requires an entire array of lens instead of a single element, each contributing a minute amount of focusing to the system. In contrast to their visible light counterparts, diffractive optics require a certain depth along the optical axis in order to provide sufficient phase shift. Mirrors reflect only at very shallow angles. In order to increase the angle of incidence, contribution from constructive interference within many layers needs to be collected. This requires a multilayer coating. Thin films have become a central ingredient for many x-ray optics due to the ease of which material composition and thickness can be controlled. Chapter 1 starts with a short introduction and survey of the field of x-ray optics. This begins with an explanation of reflective multilayers. Focusing optics are presented next, including mirrors, zone plates, refractive lenses, and multilayer Laue lens (MLL). The strengths and weaknesses of each "species" of optic are briefly discussed, alongside fabrication issues and the ultimate performance for each. Practical considerations on the use of thin-films for x-ray optics fabrication span a wide array of topics including material systems selection and instrumentation design. Sputter deposition is utilized exclusively for the work included herein because this method of thin-film deposition allows a wide array of deposition parameters to be controlled. This chapter also includes a short description of two deposition systems I have designed. Chapter 2 covers a small sampling of some of my work on reflective multilayers, and outlines two of the deposition systems I have designed and built at the Advanced Photon Source. A three-stripe double multilayer monochromator is presented as a case study in order to detail specifications, fabrication, and performance of this prolific breed of x-ray optics. The APS Rotary Deposition System was the first deposition system in the world designed specifically for multilayer

Optical and electrical properties of thin films of bismuth ferric oxide

International Nuclear Information System (INIS)

Cardona R, D.

2014-01-01

The bismuth ferric oxide (BFO) has caused great attention in recent years because of their multi ferric properties, making it very attractive for different technological applications. In this paper simultaneous ablation of two white (Bi and Fe 2 O 3 ) was used in a reactive atmosphere (containing oxygen) to deposit thin films of BFO. The composition of the films is changed by controlling the plasma parameters such as the average kinetic energy of the ions (E p) and the plasma density (Np). The effects caused by excess of Bi and Fe in atomic structure and the optical and electrical properties of the films BiFeO 3 in terms of plasma parameters were studied. The X-ray diffraction patterns of BFO samples with excess of bismuth above 2% at. They exhibited small changes in structure leading to improved levels of leakage currents compared to levels of the film with a stoichiometry close to BiFeO 3 composition. These samples showed a secondary phase (Bi 2 5FeO 4 0 selenite type) that led to the increase in the values of band gap and resistivity as well as the improvement of the piezoelectric properties. On the other hand, the films with iron excess showed as secondary phase compounds of iron oxide (α - γ-Fe 2 O 3 ) that caused increments in the conductivity and decrease in the values of band gap. The results are discussed in terms of the excesses of Bi and Fe which were correlated with the plasma parameters. (Author)

Optical properties of titanium trisulphide (TiS3) thin films

International Nuclear Information System (INIS)

Ferrer, I.J.; Ares, J.R.; Clamagirand, J.M.; Barawi, M.; Sánchez, C.

2013-01-01

Titanium trisulphide thin films have been grown on quartz substrates by sulphuration of electron-beam evaporated Ti layers (d ∼ 300 nm) in a vacuum sealed ampoule in the presence of sulphur powder at 550 °C for different periods of time (1 to 20 h). Thin films were characterized by X-ray diffraction, energy dispersive analyses of X-ray and scanning electron microscopy. Results demonstrate that films are composed by monoclinic titanium trisulphide. Films show n-type conductivity with a relatively high resistivity (ρ ∼ 4 ± 2 Ω·cm) and high values of the Seebeck coefficient (− 600 μV/K) at room temperature. Values of the optical absorption coefficient about α ∼ 10 5 cm −1 , determined from reflectance and transmittance measurements, have been obtained at photon energies hυ > 2 eV. The absorption coefficient dependence on the photon energy in the range of 1.6–3.0 eV hints the existence of a direct transition with an energy gap between 1.35 and 1.50 eV. By comparing these results with those obtained from bulk TiS 3 , a direct transition with lower energy is also found which could have been hidden due to the low value of the absorption coefficient in this energy range. - Highlights: ► Thin films of TiS 3 have been obtained by sulphuration of Ti layers. ► Optical properties of TiS 3 thin films have been determined. ► Optical energy gap of TiS 3 has been obtained. ► Optical properties of bulk TiS 3 have been measured and compared with those of films

Pulsed Plasma Polymerization of Perfluorooctyl Ethylene for Transparent Hydrophobic Thin Coatings

International Nuclear Information System (INIS)

Liu Xiaojun; Wang Lei; Hao Jie; Chu Liqiang

2015-01-01

Herein we report on the deposition of transparent hydrophobic thin coatings by radio frequency plasma polymerization (PP) of perfluorooctyl ethylene (PFOE) in both pulsed and continuous wave (CW) modes. The chemical compositions of the resulting PP-PFOE coatings were confirmed by means of Fourier transform infrared spectroscopy (FT-IR) and X-ray photoelectron spectroscopy (XPS). The thicknesses and surface morphologies of the coatings were examined using surface plasmon resonance spectroscopy and atomic force microscopy. The surface wetting properties and optical transmittance were measured using a water contact angle goniometer and UV-vis spectroscopy. The FT-IR and XPS data showed that the PP-PFOE coatings deposited in the pulsed mode had a higher retention of CF 2 groups compared to those from the CW mode. While the water contact angle of the freshly deposited PP-PFOE from the pulsed mode showed a decrease from 120 degrees to 111 degrees in the first two days, it then remained almost unchanged up to 45 days. The UV-vis data indicated that a PP-PFOE coating 30.6 nm thick had a light transmittance above 90% in the UV and visible ranges. The deposition rates under various plasma conditions are also discussed. (paper)

Plasma-treated Langmuir-Blodgett reduced graphene oxide thin film for applications in biophotovoltaics

Science.gov (United States)

Ibrahim, Siti Aisyah; Jaafar, Muhammad Musoddiq; Ng, Fong-Lee; Phang, Siew-Moi; Kumar, G. Ghana; Majid, Wan Haliza Abd; Periasamy, Vengadesh

2018-01-01

The surface optimization and structural characteristics of Langmuir-Blodgett (LB) reduced graphene oxide thin (rGO) film treated by argon plasma treatment were studied. In this work, six times deposition of rGO was deposited on a clean glass substrate using the LB method. Plasma technique involving a variation of plasma power, i.e., 20, 60, 100 and 140 W was exposed to the LB-rGO thin films under argon ambience. The plasma treatment generally improves the wettability or hydrophilicity of the film surface compared to without treatment. Maximum wettability was observed at a plasma power of 20 W, while also increasing the adhesion of the rGO film with the glass substrate. The multilayer films fabricated were characterized by means of spectroscopic, structural and electrical studies. The treatment of rGO with argon plasma was found to have improved its biocompatibility, and thus its performance as an electrode for biophotovoltaic devices has been shown to be enhanced considerably.

Synthesis of Cu2O from CuO thin films: Optical and electrical properties

Directory of Open Access Journals (Sweden)

Dhanya S. Murali

2015-04-01

Full Text Available Hole conducting, optically transparent Cu2O thin films on glass substrates have been synthesized by vacuum annealing (5×10−6 mbar at 700 K for 1 hour of magnetron sputtered (at 300 K CuO thin films. The Cu2O thin films are p-type and show enhanced properties: grain size (54.7 nm, optical transmission 72% (at 600 nm and Hall mobility 51 cm2/Vs. The bulk and surface Valence band spectra of Cu2O and CuO thin films are studied by temperature dependent Hall effect and Ultra violet photo electron Spectroscopy (UPS. CuO thin films show a significant band bending downwards (due to higher hole concentration than Cu2O thin films.

Structural and optical properties of electrodeposited culnSe2 thin films for photovoltaic solar cells

International Nuclear Information System (INIS)

Guillen, C.; Herrero, J.; Galiano, F.

1990-01-01

Optical an structural properties of electrodeposited copper indium diselenide, CulnSe2, thin films were studied for its application in photovoltaic devices. X-ray diffraction patterns showed that thin films were grown in chalcopyrite phase after suitable treatments. Values of Eg for the CulnSe2 thin films showed a dependence on the deposition potential as determined by optical measurements. (Author) 47 refs

Properties of nanostructured undoped ZrO{sub 2} thin film electrolytes by plasma enhanced atomic layer deposition for thin film solid oxide fuel cells

Energy Technology Data Exchange (ETDEWEB)

Cho, Gu Young; Noh, Seungtak; Lee, Yoon Ho; Cha, Suk Won, E-mail: ybkim@hanyang.ac.kr, E-mail: swcha@snu.ac.kr [Department of Mechanical and Aerospace Engineering, Seoul National University, 1 Gwanak-ro, Gwanak-gu, Seoul 151-744 (Korea, Republic of); Ji, Sanghoon [Graduate School of Convergence Science and Technology, Seoul National University, Iui-dong, Yeongtong-gu, Suwon 443-270 (Korea, Republic of); Hong, Soon Wook; Koo, Bongjun; Kim, Young-Beom, E-mail: ybkim@hanyang.ac.kr, E-mail: swcha@snu.ac.kr [Department of Mechanical Engineering, Hanyang University, 222 Wangsimni-ro, Seongdong-gu, Seoul 133-791 (Korea, Republic of); An, Jihwan [Manufacturing Systems and Design Engineering Programme, Seoul National University of Science and Technology, 232 Gongneung-ro, Nowon-gu, Seoul 139-743 (Korea, Republic of)

2016-01-15

Nanostructured ZrO{sub 2} thin films were prepared by thermal atomic layer deposition (ALD) and by plasma-enhanced atomic layer deposition (PEALD). The effects of the deposition conditions of temperature, reactant, plasma power, and duration upon the physical and chemical properties of ZrO{sub 2} films were investigated. The ZrO{sub 2} films by PEALD were polycrystalline and had low contamination, rough surfaces, and relatively large grains. Increasing the plasma power and duration led to a clear polycrystalline structure with relatively large grains due to the additional energy imparted by the plasma. After characterization, the films were incorporated as electrolytes in thin film solid oxide fuel cells, and the performance was measured at 500 °C. Despite similar structure and cathode morphology of the cells studied, the thin film solid oxide fuel cell with the ZrO{sub 2} thin film electrolyte by the thermal ALD at 250 °C exhibited the highest power density (38 mW/cm{sup 2}) because of the lowest average grain size at cathode/electrolyte interface.

Plasma-assisted cleaning of extreme UV optics

NARCIS (Netherlands)

Dolgov, Alexandr Alexeevich

2018-01-01

Plasma-assisted cleaning of extreme UV optics EUV-induced surface plasma chemistry of photo-active agents The next generation of photolithography, extreme ultraviolet (EUV) lithography, makes use of 13.5 nm radiation. The ionizing photon flux, and vacuum requirements create a challenging operating

Coating Thin Mirror Segments for Lightweight X-ray Optics

Science.gov (United States)

Chan, Kai-Wing; Sharpe, Marton V.; Zhang, William; Kolosc, Linette; Hong, Melinda; McClelland, Ryan; Hohl, Bruce R.; Saha, Timo; Mazzarellam, James

2013-01-01

Next generations lightweight, high resolution, high throughput optics for x-ray astronomy requires integration of very thin mirror segments into a lightweight telescope housing without distortion. Thin glass substrates with linear dimension of 200 mm and thickness as small as 0.4 mm can now be fabricated to a precision of a few arc-seconds for grazing incidence optics. Subsequent implementation requires a distortion-free deposition of metals such as iridium or platinum. These depositions, however, generally have high coating stresses that cause mirror distortion. In this paper, we discuss the coating stress on these thin glass mirrors and the effort to eliminate their induced distortion. It is shown that balancing the coating distortion either by coating films with tensile and compressive stresses, or on both sides of the mirrors is not sufficient. Heating the mirror in a moderately high temperature turns out to relax the coated films reasonably well to a precision of about a second of arc and therefore provide a practical solution to the coating problem.

Electron beam manipulation, injection and acceleration in plasma wakefield accelerators by optically generated plasma density spikes

Energy Technology Data Exchange (ETDEWEB)

Wittig, Georg; Karger, Oliver S.; Knetsch, Alexander [Institute of Experimental Physics, University of Hamburg, 22761 Hamburg (Germany); Xi, Yunfeng; Deng, Aihua; Rosenzweig, James B. [Particle Beam Physics Laboratory, UCLA, Los Angeles, CA 90095 (United States); Bruhwiler, David L. [RadiaSoft LLC, Boulder, CO 80304 (United States); RadiaBeam Technologies LLC (United States); Smith, Jonathan [Tech-X UK Ltd, Daresbury, Cheshire WA4 4FS (United Kingdom); Sheng, Zheng-Ming; Jaroszynski, Dino A.; Manahan, Grace G. [Physics Department, SUPA, University of Strathclyde, Glasgow G4 0NG (United Kingdom); Hidding, Bernhard [Institute of Experimental Physics, University of Hamburg, 22761 Hamburg (Germany); Physics Department, SUPA, University of Strathclyde, Glasgow G4 0NG (United Kingdom)

2016-09-01

We discuss considerations regarding a novel and robust scheme for optically triggered electron bunch generation in plasma wakefield accelerators [1]. In this technique, a transversely propagating focused laser pulse ignites a quasi-stationary plasma column before the arrival of the plasma wake. This localized plasma density enhancement or optical “plasma torch” distorts the blowout during the arrival of the electron drive bunch and modifies the electron trajectories, resulting in controlled injection. By changing the gas density, and the laser pulse parameters such as beam waist and intensity, and by moving the focal point of the laser pulse, the shape of the plasma torch, and therefore the generated trailing beam, can be tuned easily. The proposed method is much more flexible and faster in generating gas density transitions when compared to hydrodynamics-based methods, and it accommodates experimentalists needs as it is a purely optical process and straightforward to implement.

Transparent conductive p-type lithium-doped nickel oxide thin films deposited by pulsed plasma deposition

Science.gov (United States)

Huang, Yanwei; Zhang, Qun; Xi, Junhua; Ji, Zhenguo

2012-07-01

Transparent p-type Li0.25Ni0.75O conductive thin films were prepared on conventional glass substrates by pulsed plasma deposition. The effects of substrate temperature and oxygen pressure on structural, electrical and optical properties of the films were investigated. The electrical resistivity decreases initially and increases subsequently as the substrate temperature increases. As the oxygen pressure increases, the electrical resistivity decreases monotonically. The possible physical mechanism was discussed. And a hetero p-n junction of p-Li0.25Ni0.75O/n-SnO2:W was fabricated by depositing n-SnO2:W on top of the p-Li0.25Ni0.75O, which exhibits typical rectifying current-voltage characteristics.

Transparent conductive p-type lithium-doped nickel oxide thin films deposited by pulsed plasma deposition

International Nuclear Information System (INIS)

Huang Yanwei; Zhang Qun; Xi Junhua; Ji Zhenguo

2012-01-01

Transparent p-type Li 0.25 Ni 0.75 O conductive thin films were prepared on conventional glass substrates by pulsed plasma deposition. The effects of substrate temperature and oxygen pressure on structural, electrical and optical properties of the films were investigated. The electrical resistivity decreases initially and increases subsequently as the substrate temperature increases. As the oxygen pressure increases, the electrical resistivity decreases monotonically. The possible physical mechanism was discussed. And a hetero p-n junction of p-Li 0.25 Ni 0.75 O/n-SnO 2 :W was fabricated by depositing n-SnO 2 :W on top of the p-Li 0.25 Ni 0.75 O, which exhibits typical rectifying current-voltage characteristics.

Magneto-Optical Thin Films for On-Chip Monolithic Integration of Non-Reciprocal Photonic Devices.

Science.gov (United States)

Bi, Lei; Hu, Juejun; Jiang, Peng; Kim, Hyun Suk; Kim, Dong Hun; Onbasli, Mehmet Cengiz; Dionne, Gerald F; Ross, Caroline A

2013-11-08

Achieving monolithic integration of nonreciprocal photonic devices on semiconductor substrates has been long sought by the photonics research society. One way to achieve this goal is to deposit high quality magneto-optical oxide thin films on a semiconductor substrate. In this paper, we review our recent research activity on magneto-optical oxide thin films toward the goal of monolithic integration of nonreciprocal photonic devices on silicon. We demonstrate high Faraday rotation at telecommunication wavelengths in several novel magnetooptical oxide thin films including Co substituted CeO₂ -δ , Co- or Fe-substituted SrTiO 3- δ , as well as polycrystalline garnets on silicon. Figures of merit of 3~4 deg/dB and 21 deg/dB are achieved in epitaxial Sr(Ti 0.2 Ga 0.4 Fe 0.4 )O 3- δ and polycrystalline (CeY₂)Fe₅O 12 films, respectively. We also demonstrate an optical isolator on silicon, based on a racetrack resonator using polycrystalline (CeY₂)Fe₅O 12 /silicon strip-loaded waveguides. Our work demonstrates that physical vapor deposited magneto-optical oxide thin films on silicon can achieve high Faraday rotation, low optical loss and high magneto-optical figure of merit, therefore enabling novel high-performance non-reciprocal photonic devices monolithically integrated on semiconductor substrates.

Summary of the recent conference on thin-film neutron optical devices

International Nuclear Information System (INIS)

Majkrzak, C.F.

1989-01-01

The proceedings of the conference of the International Society for Optical Engineering on Thin-Film Neutron Optical Devices: Mirrors, Supermirrors, Multilayer Monochromators, Polarizers and Beam Guides, which was held in San Diego, California in August, 1988, are summarized here. 2 refs

Chemically deposited Sb{sub 2}S{sub 3} thin films for optical recording

Energy Technology Data Exchange (ETDEWEB)

Shaji, S; Arato, A; Castillo, G Alan; Palma, M I Mendivil; Roy, T K Das; Krishnan, B [Facultad de IngenierIa Mecanica y Electrica, Universidad Autonoma de Nuevo Leon, San Nicolas de los Garza, Nuevo Leon, C.P- 66450 (Mexico); O' Brien, J J; Liu, J, E-mail: bkrishnan@fime.uanl.m [Center for Nanoscience and Department of Chemistry and Biochemistry, University of Missouri-St. Louis, One Univ. Blvd., St. Louis, MO - 63121 (United States)

2010-02-24

Laser induced changes in the properties of Sb{sub 2}S{sub 3} thin films prepared by chemical bath deposition are described in this paper. Sb{sub 2}S{sub 3} thin films of thickness 550 nm were deposited from a solution containing SbCl{sub 3} and Na{sub 2}S{sub 2}O{sub 3} at 27 {sup 0}C for 5 h. These thin films were irradiated by a 532 nm continuous wave laser beam under different conditions at ambient atmosphere. X-ray diffraction analysis showed amorphous to polycrystalline transformation due to laser exposure of these thin films. Morphology and composition of these films were described. Optical properties of these films before and after laser irradiation were analysed. The optical band gap of the material was decreased due to laser induced crystallization. The results obtained confirm that there is further scope for developing this material as an optical recording media.

Optical response of Cu3Ge thin films

OpenAIRE

Aboelfotoh, M. O.; Guizzetti, G.; Marabelli, F.; Pellegrino, Paolo; Sassella, A.

1996-01-01

We report an investigation on the optical properties of Cu3Ge thin films displaying very high conductivity, with thickness ranging from 200 to 2000 Å, deposited on Ge substrates. Reflectance, transmittance, and ellipsometric spectroscopy measurements were performed at room temperature in the 0.01-6.0, 0.01-0.6, and 1.4-5.0 eV energy range, respectively. The complex dielectric function, the optical conductivity, the energy-loss function, and the effective charge density were obtained over the ...

Thickness and microstructure effects in the optical and electrical properties of silver thin films

Directory of Open Access Journals (Sweden)

Guowen Ding

2015-11-01

Full Text Available The optical and electrical response of metal thin films approaching thicknesses in the range of the electron mean free path is highly affected by electronic scattering with the interfaces and defects. Here, we present a theoretical and experimental study on how thickness and microstructure affect the properties of Ag thin films. We are able to successfully model the electrical resistivity and IR optical response using a thickness dependent electronic scattering time. Remarkably, the product of electronic scattering time and resistivity remains constant regardless of the thickness (τx ρ = C, with a value of 59 ± 2 μΩ cm ⋅ fs for Ag films in the investigated range from 3 to 74 nm. Our findings enable us to develop a theoretically framework that allows calculating the optical response of metal thin films in the IR by using their measured thickness and resistivity. An excellent agreement is found between experimental measurements and predicted values. This study also shows the theoretical lower limit for emissivity in Ag thin films according to their microstructure and thickness. Application of the model presented here will allow rapid characterization of the IR optical response of metal thin films, with important application in a broad spectrum of fundamental and industrial applications, including optical coatings, low-emissivity windows and semiconductor industry.

Modelling of new generation plasma optical devices

Directory of Open Access Journals (Sweden)

Litovko Irina V.

2016-06-01

Full Text Available The paper presents new generation plasma optical devices based on the electrostatic plasma lens configuration that opens a novel attractive possibility for effective high-tech practical applications. Original approaches to use of plasma accelerators with closed electron drift and open walls for the creation of a cost-effective low-maintenance plasma lens with positive space charge and possible application for low-cost, low-energy rocket engine are described. The preliminary experimental, theoretical and simulation results are presented. It is noted that the presented plasma devices are attractive for many different applications in the state-of-the-art vacuum-plasma processing.

Optical coherence techniques for plasma doppler spectroscopy

International Nuclear Information System (INIS)

Howard, J.; Michael, C.; Glass, F.; Cheetham, A.D.

2000-01-01

A new electro-optically Modulated Optical Solid-State (MOSS) interferometer has been constructed for measurement of the low order spectral moments of line emission from optically thin radiant media. The instrument, which is based on the principle of the Fourier transform spectrometer, has high etendue and is rugged, compact and inexpensive. By employing electro-optical path-length modulation techniques, the spectral information is transferred to the temporal frequency domain and can be obtained using a single photodetector. Specifically, the zeroth moment (brightness) is given by the average signal level, the first moment (shift) by the modulation phase and the second moment (line width) by the modulation amplitude. (author)

Moisture resistant and anti-reflection optical coatings produced by plasma polymerization of organic compounds

Science.gov (United States)

Hollahan, J. R.; Wydeven, T.

1975-01-01

The need for protective coatings on critical optical surfaces, such as halide crystal windows or lenses used in spectroscopy, has long been recognized. It has been demonstrated that thin, one micron, organic coatings produced by polymerization of flourinated monomers in low temperature gas discharge (plasma) exhibit very high degrees of moisture resistence, e.g., hundreds of hours protection for cesium iodide vs. minutes before degradation sets in for untreated surfaces. The index of refraction of these coatings is intermediate between that of the halide substrate and air, a condition for anti-reflection, another desirable property of optical coatings. Thus, the organic coatings not only offer protection, but improved transmittance as well. The polymer coating is non-absorbing over the range 0.4 to 40 microns with an exception at 8.0 microns, the expected absorption for C-F bonds.

Influence of sputtering power on the optical properties of ITO thin films

Energy Technology Data Exchange (ETDEWEB)

K, Aijo John; M, Deepak, E-mail: manju.thankamoni@gmail.com; T, Manju, E-mail: manju.thankamoni@gmail.com [Department of Physics, Sree Sankara College, Kalady P. O., Ernakulam Dist., Kerala (India); Kumar, Vineetha V. [Dept. of Physics, K. E. College, Mannanam, Kottayam Dist., Kerala (India)

2014-10-15

Tin doped indium oxide films are widely used in transparent conducting coatings such as flat panel displays, crystal displays and in optical devices such as solar cells and organic light emitting diodes due to the high electrical resistivity and optical transparency in the visible region of solar spectrum. The deposition parameters have a commendable influence on the optical and electrical properties of the thin films. In this study, ITO thin films were prepared by RF magnetron sputtering. The properties of the films prepared under varying sputtering power were compared using UV- visible spectrophotometry. Effect of sputtering power on the energy band gap, absorption coefficient and refractive index are investigated.

Surface plasmon resonance investigation of optical detection in plasma-modified phospholipid layers

International Nuclear Information System (INIS)

Park, Byoungchoo; Cho, Chanyoun; Choi, Kyoungho; Jeon, Honggoo

2012-01-01

We herein report on a study of surface plasmon resonance (SPR) in thin gold (Au) films coated with thin layers of phospholipid material, which had been exposed to an atmospheric pressure (AP) plasma containing both pure Ar and Ar mixed with O 2 (Ar/O 2 , 0.8%). The phospholipid material that we used for the SPR experiments was lecithin, and the AP plasma system was applied in air by means of a radio-frequency (RF) plasma generator. A thin (∼60 nm) film of Au and a thin (∼15 nm) layer of lecithin were deposited and attached to the face of a prism, and surface plasmon modes were excited along the interfaces of the prism-Au-lecithin-air system by means of prism coupling using a He-Ne Laser (632.8 nm). The experimental SPR reflectance curves of the Au-lecithin-air modes were found to be shifted towards those of the Au-air mode with increasing applications of AP RF plasma treatment. From the shifts in the SPR curves, we found that the estimated thickness of the lecithin layer treated with a pure Ar plasma showed a linear decrease with etching rate of about 3 nm per treatment while the thickness of the lecithin layer treated with a mixed Ar/O 2 plasma showed a tendency to saturate following a large initial decrease (ca. 14 nm). All these results demonstrate that the use of SPR sensing could facilitate the detection of extremely small variations in plasma-treated films of biomaterials.

Time-Resolved Emission Spectroscopic Study of Laser-Induced Steel Plasmas

International Nuclear Information System (INIS)

Shah, M. L.; Pulhani, A. K.; Suri, B. M.; Gupta, G. P.

2013-01-01

Laser-induced steel plasma is generated by focusing a Q-switched Nd:YAG visible laser (532 nm wavelength) with an irradiance of ∼ 1 × 10 9 W/cm 2 on a steel sample in air at atmospheric pressure. An Echelle spectrograph coupled with a gateable intensified charge-coupled detector is used to record the plasma emissions. Using time-resolved spectroscopic measurements of the plasma emissions, the temperature and electron number density of the steel plasma are determined for many times of the detector delay. The validity of the assumption by the spectroscopic methods that the laser-induced plasma (LIP) is optically thin and is also in local thermodynamic equilibrium (LTE) has been evaluated for many delay times. From the temporal evolution of the intensity ratio of two Fe I lines and matching it with its theoretical value, the delay times where the plasma is optically thin and is also in LTE are found to be 800 ns, 900 ns and 1000 ns.

Plasma mirrors for ultrahigh-intensity optics

Energy Technology Data Exchange (ETDEWEB)

Thaury, C; Quere, F; Levy, A; Ceccotti, T; Monot, P; Bougeard, M; Reau, F; D' Oliveira, P; Martin, PH [CEA, DSM, DRECAM, Serv Photons Atomes and Mol, F-91191 Gif Sur Yvette, (France); Geindre, J P; Audebert, P [Ecole Polytech, CNRS, Lab Utilisat Lasers Inst, F-91128 Palaiseau, (France); Marjoribanks, R [Univ Toronto, Dept Phys, Toronto, ON M5S 1A7, (Canada); Marjoribanks, R [Univ Toronto, Inst Opt Sci, Toronto, ON M5S 1A7, (Canada)

2007-07-01

Specular reflection is one of the most fundamental processes of optics. At moderate light intensities generated by conventional light sources this process is well understood. But at those capable of being produced by modern ultrahigh-intensity lasers, many new and potentially useful phenomena arise. When a pulse from such a laser hits an optically polished surface, it generates a dense plasma that itself acts as a mirror, known as a plasma mirror (PM). PMs do not just reflect the remainder of the incident beam, but can act as active optical elements. Using a set of three consecutive PMs in different regimes, we significantly improve the temporal contrast of femtosecond pulses, and demonstrate that high-order harmonics of the laser frequency can be generated through two distinct mechanisms. A better understanding of these processes should aid the development of laser-driven atto-second sources for use in fields from materials science to molecular biology. (authors)

Plasma mirrors for ultrahigh-intensity optics

International Nuclear Information System (INIS)

Thaury, C.; Quere, F.; Levy, A.; Ceccotti, T.; Monot, P.; Bougeard, M.; Reau, F.; D'Oliveira, P.; Martin, PH.; Geindre, J.P.; Audebert, P.; Marjoribanks, R.; Marjoribanks, R.

2007-01-01

Specular reflection is one of the most fundamental processes of optics. At moderate light intensities generated by conventional light sources this process is well understood. But at those capable of being produced by modern ultrahigh-intensity lasers, many new and potentially useful phenomena arise. When a pulse from such a laser hits an optically polished surface, it generates a dense plasma that itself acts as a mirror, known as a plasma mirror (PM). PMs do not just reflect the remainder of the incident beam, but can act as active optical elements. Using a set of three consecutive PMs in different regimes, we significantly improve the temporal contrast of femtosecond pulses, and demonstrate that high-order harmonics of the laser frequency can be generated through two distinct mechanisms. A better understanding of these processes should aid the development of laser-driven atto-second sources for use in fields from materials science to molecular biology. (authors)

Synthesis of electro-active manganese oxide thin films by plasma enhanced chemical vapor deposition

Energy Technology Data Exchange (ETDEWEB)

Merritt, Anna R. [Energetics Research Division, Naval Air Warfare Center Weapons Division, China Lake, CA 93555 (United States); Rajagopalan, Ramakrishnan [Department of Engineering, The Pennsylvania State University, Dubois, PA 15801 (United States); Materials Research Institute, The Pennsylvania State University, University Park, PA 16802 (United States); Carter, Joshua D. [Energetics Research Division, Naval Air Warfare Center Weapons Division, China Lake, CA 93555 (United States)

2014-04-01

The good stability, cyclability and high specific capacitance of manganese oxide (MnO{sub x}) has recently promoted a growing interest in utilizing MnO{sub x} in asymmetric supercapacitor electrodes. Several literature reports have indicated that thin film geometries of MnO{sub x} provide specific capacitances that are much higher than bulk MnO{sub x} powders. Plasma enhanced chemical vapor deposition (PECVD) is a versatile technique for the production of metal oxide thin films with high purity and controllable thickness. In this work, MnO{sub x} thin films deposited by PECVD from a methylcyclopentadienyl manganese tricarbonyl precursor are presented and the effect of processing conditions on the quality of MnO{sub x} films is described. The film purity and oxidation state of the MnO{sub x} films were studied by Fourier transform infrared spectroscopy and X-ray photoelectron spectroscopy. Preliminary electrochemical testing of MnO{sub x} films deposited on carbon fiber electrodes in aqueous electrolytes indicates that the PECVD synthesized films are electrochemically active. - Highlights: • Plasma enhanced chemical vapor deposition of manganese oxide thin films. • Higher plasma power and chamber pressure increase deposition rate. • Manganese oxide thin films are electrochemically active. • Best electrochemical performance observed for pure film with low stress • Lower capacitance observed at higher scan rates despite thin film geometry.

Optical properties of PbS thin films

Energy Technology Data Exchange (ETDEWEB)

Akhmedov, O. R., E-mail: orucahmedov@mail.ru; Guseinaliyev, M. G. [National Academy of Azerbaijan, Nakhichevan Branch (Azerbaijan); Abdullaev, N. A.; Abdullaev, N. M.; Babaev, S. S.; Kasumov, N. A. [National Academy of Sciences of Azerbaijan, Abdullaev Institute of Physics (Azerbaijan)

2016-01-15

The complex dielectric function of PbS thin films is studied by spectroscopic ellipsometry in the spectral range from 0.74 to 6.45 eV at a temperature of 293 K. The critical energies are determined to be E{sub 1} = 3.53 eV and E{sub 2} = 4.57 eV. For both energy regions, the best fit is attained at the critical point 2D (m = 0). In addition, the Raman spectra and the optical-absorption spectra of PbS thin films are studied. From the dependence of the quantity (αhν){sup 2} on the photon energy hν, the band gap is established at E{sub g} = 0.37 eV.

Analysis of a Thin Optical Lens Model

Science.gov (United States)

Ivchenko, Vladimir V.

2011-01-01

In this article a thin optical lens model is considered. It is shown that the limits of its applicability are determined not only by the ratio between the thickness of the lens and the modules of the radii of curvature, but above all its geometric type. We have derived the analytical criteria for the applicability of the model for different types…

Magneto-Optical Thin Films for On-Chip Monolithic Integration of Non-Reciprocal Photonic Devices

Directory of Open Access Journals (Sweden)

Mehmet Cengiz Onbasli

2013-11-01

Full Text Available Achieving monolithic integration of nonreciprocal photonic devices on semiconductor substrates has been long sought by the photonics research society. One way to achieve this goal is to deposit high quality magneto-optical oxide thin films on a semiconductor substrate. In this paper, we review our recent research activity on magneto-optical oxide thin films toward the goal of monolithic integration of nonreciprocal photonic devices on silicon. We demonstrate high Faraday rotation at telecommunication wavelengths in several novel magnetooptical oxide thin films including Co substituted CeO2−δ, Co- or Fe-substituted SrTiO3−δ, as well as polycrystalline garnets on silicon. Figures of merit of 3~4 deg/dB and 21 deg/dB are achieved in epitaxial Sr(Ti0.2Ga0.4Fe0.4O3−δ and polycrystalline (CeY2Fe5O12 films, respectively. We also demonstrate an optical isolator on silicon, based on a racetrack resonator using polycrystalline (CeY2Fe5O12/silicon strip-loaded waveguides. Our work demonstrates that physical vapor deposited magneto-optical oxide thin films on silicon can achieve high Faraday rotation, low optical loss and high magneto-optical figure of merit, therefore enabling novel high-performance non-reciprocal photonic devices monolithically integrated on semiconductor substrates.

Optical diagnostics for plasma etching

NARCIS (Netherlands)

Bisschops, T.H.J.; Kroesen, G.M.W.; Veldhuizen, van E.M.; de Zeeuw, C.J.H.; Timmermans, C.J.

1985-01-01

Several optical diagnostics were used to det. plasma properties and etch rates in an single wafer etch reactor. Results of UV-visible spectroscopy and IR absorption spectroscopy, indicating different mol. species and their densities are presented. The construction of an interferometer to det. the

Relationships among surface processing at the nanometer scale, nanostructure and optical properties of thin oxide films

Energy Technology Data Exchange (ETDEWEB)

Losurdo, Maria

2004-05-01

Spectroscopic ellipsometry is used to study the optical properties of nanostructured semiconductor oxide thin films. Various examples of models for the dielectric function, based on Lorentzian oscillators combined with the Drude model, are given based on the band structure of the analyzed oxide. With this approach, the optical properties of thin films are determined independent of the dielectric functions of the corresponding bulk materials, and correlation between the optical properties and nanostructure of thin films is investigated. In particular, in order to discuss the dependence of optical constants on grain size, CeO{sub 2} nanostructured films are considered and parameterized by two-Lorentzian oscillators or two-Tauc-Lorentz model depending on the nanostructure and oxygen deficiency. The correlation among anisotropy, crystalline fraction and optical properties parameterized by a four-Lorentz oscillator model is discussed for nanocrystalline V{sub 2}O{sub 5} thin films. Indium tin oxide thin films are discussed as an example of the presence of graded optical properties related to interfacial reactivity activated by processing conditions. Finally, the example of ZnO shows the potential of ellipsometry in discerning crystal and epitaxial film polarity through the analysis of spectra and the detection of surface reactivity of the two polar faces, i.e. Zn-polarity and O-polarity.

Effect of silane/hydrogen ratio on microcrystalline silicon thin films by remote inductively coupled plasma

Science.gov (United States)

Guo, Y. N.; Wei, D. Y.; Xiao, S. Q.; Huang, S. Y.; Zhou, H. P.; Xu, S.

2013-05-01

Hydrogenated microcrystalline silicon (μc-Si:H) thin films were prepared by remote low frequency inductively coupled plasma (ICP) chemical vapor deposition system, and the effect of silane/hydrogen ratio on the microstructure and electrical properties of μc-Si:H films was systematically investigated. As silane/hydrogen ratio increases, the crystalline volume fraction Fc decreases and the ratio of the intensity of (220) peak to that of (111) peak drops as silane flow rate is increased. The FTIR result indicates that the μc-Si:H films prepared by remote ICP have a high optical response with a low hydrogen content, which is in favor of reducing light-induced degradation effect. Furthermore, the processing window of the phase transition region for remote ICP is much wider than that for typical ICP. The photosensitivity of μc-Si:H films can exceed 100 at the transition region and this ensures the possibility of the fabrication of microcrystalline silicon thin film solar cells with a open-circuit voltage of about 700 mV.

Structural and optical properties of DC reactive magnetron sputtered zinc aluminum oxide thin films

Energy Technology Data Exchange (ETDEWEB)

Kumar, B. Rajesh, E-mail: rajphyind@gmail.com [Department of Physics, GITAM Institute of Technology, GITAM University, Visakhapatnam - 530 045, A.P. (India); Rao, T. Subba, E-mail: thotasubbarao6@gmail.com [Department of Physics, Sri Krishnadevaraya University, Anantapuramu - 515 003, A.P. (India)

2014-10-15

Highly transparent conductive Zinc Aluminum Oxide (ZAO) thin films have been deposited on glass substrates using DC reactive magnetron sputtering method. The thin films were deposited at 200 °C and post-deposition annealing from 15 to 90 min. XRD patterns of ZAO films exhibit only (0 0 2) diffraction peak, indicating that they have c-axis preferred orientation perpendicular to the substrate. Scanning electron microscopy (SEM) is used to study the surface morphology of the films. The grain size obtained from SEM images of ZAO thin films are found to be in the range of 20 - 26 nm. The minimum resistivity of 1.74 × 10{sup −4} Ω cm and an average transmittance of 92% are obtained for the thin film post annealed for 30 min. The optical band gap of ZAO thin films increased from 3.49 to 3.60 eV with the increase of annealing time due to Burstein-Moss effect. The optical constants refractive index (n) and extinction coefficient (k) were also determined from the optical transmission spectra.

Optically transparent super-hydrophobic thin film fabricated by reusable polyurethane-acrylate (PUA) mold

Science.gov (United States)

Park, J.-S.; Park, J.-H.; Lee, D.-W.

2018-02-01

In this paper, we describe a simple manufacturing method for producing an optically transparent super-hydrophobic polymer thin film using a reusable photo-curable polymer mold. Soluble photoresist (PR) molds were prepared with under-exposed and under-baked processes, which created unique hierarchical micro/nano structures. The reverse phase of the PR mold was replicated on the surface of polydimethylsiloxane (PDMS) substrates. The unique patterns on the replicated PDMS molds were successfully transferred back to the UV curable polyurethane-acrylate (PUA) using a laboratory-made UV exposure system. Continuous production of the super-hydrophobic PDMS thin film was demonstrated using the reusable PUA mold. In addition, hydrophobic nano-silica powder was sprayed onto the micro/nano structured PDMS surfaces to further improve hydrophobicity. The fabricated PDMS thin films with hierarchical surface texturing showed a water contact angle  ⩾150°. Excellent optical transmittance within the range of visible light of wavelengths between 400-800 nm was experimentally confirmed using a spectrophotometer. High efficiency of the super-hydrophobic PDMS film in optical transparency was also confirmed using solar panels. The fabricated PUA molds are very suitable for use in roll-to-roll or roll-to-plate systems which allow continuous production of super-hydrophobic thin films with an excellent optical transparency.

Polymorphous silicon thin films produced in dusty plasmas: application to solar cells

International Nuclear Information System (INIS)

Roca i Cabarrocas, Pere; Chaabane, N; Kharchenko, A V; Tchakarov, S

2004-01-01

We summarize our current understanding of the optimization of PIN solar cells produced by plasma enhanced chemical vapour deposition from silane-hydrogen mixtures. To increase the deposition rate, the discharge is operated under plasma conditions close to powder formation, where silicon nanocrystals contribute to the deposition of so-called polymorphous silicon thin films. We show that the increase in deposition rate can be achieved via an accurate control of the plasma parameters. However, this also results in a highly defective interface in the solar cells due to the bombardment of the P-layer by positively charged nanocrystals during the deposition of the I-layer. We show that decreasing the ion energy by increasing the total pressure or by using silane-helium mixtures allows us to increase both the deposition rate and the solar cells efficiency, as required for cost effective thin film photovoltaics

Characterization of diamond-like carbon thin film synthesized by RF atmospheric pressure plasma Ar/CH4 jet

Science.gov (United States)

Sohbatzadeh, Farshad; Safari, Reza; Etaati, G. Reza; Asadi, Eskandar; Mirzanejhad, Saeed; Hosseinnejad, Mohammad Taghi; Samadi, Omid; Bagheri, Hanieh

2016-01-01

The growth of diamond like carbon (DLC) on a Pyrex glass was investigated by a radio frequency (RF) atmospheric pressure plasma jet (APPJ). The plasma jet with capacitive configuration ran by a radio frequency power supply at 13.56 MHz. Alumina ceramic was used as dielectric barrier. Ar and CH4 were used in atmospheric pressure as carrier and precursor gases, respectively. Diamond like carbon thin films were deposited on Pyrex glass at substrate temperature and applied power of 130 °C and 250 Watts, respectively. Performing field emission scanning electron microscope (FE-SEM) and laser Raman spectroscopy analysis resulted in deposition rate and the ID/IG ratio of 21.31 nm/min and 0.47, respectively. The ID/IG ratio indicated that the coating possesses relative high sp3 content The optical emission spectroscopy (OES) diagnostic was applied to diagnose plasma jet species. Estimating electron temperature and density of the RF-APPJ resulted in 1.36 eV and 2.75 × 1014 cm-3 at the jet exit, respectively.

Optimization of time on CF_4/O_2 etchant for inductive couple plasma reactive ion etching of TiO_2 thin film

International Nuclear Information System (INIS)

Adzhri, R.; Fathil, M. F. M.; Ruslinda, A. R.; Gopinath, Subash C. B.; Voon, C. H.; Foo, K. L.; Nuzaihan, M. N. M.; Azman, A. H.; Zaki, M.; Arshad, M. K. Md.; Hashim, U.; Ayub, R. M.

2016-01-01

In this work, we investigate the optimum etching of titanium dioxide (TiO_2) using inductive couple plasma reactive ion etching (ICP-RIE) on our fabricated devices. By using a combination of CF_4/O_2 gases as plasma etchant with ratio of 3:1, three samples of TiO_2 thin film were etched with different time duration of 10 s, 15 s and 20 s. The ion bombardment of CF_4 gases with plasma enhancement by O_2 gas able to break the oxide bond of TiO_2 and allow anisotropic etch profile with maximum etch rate of 18.6 nm/s. The sample was characterized by using optical profilometer to determine the depth of etched area and scanning electron microscopy (SEM) for etch profile characterization.

Relation between the plasma characteristics and physical properties of functional zinc oxide thin film prepared by radio frequency magnetron sputtering process

International Nuclear Information System (INIS)

Hsu, Che-Wei; Cheng, Tsung-Chieh; Huang, Wen-Hsien; Wu, Jong-Shinn; Cheng, Cheng-Chih; Cheng, Kai-Wen; Huang, Shih-Chiang

2010-01-01

The ZnO thin film was deposited on a glass substrate by a RF reactive magnetron sputtering method. Results showed that plasma density, electron temperature, deposition rate and estimated ion bombardment energy increase with increasing applied RF power. Three distinct power regimes were observed, which are strongly correlated with plasma properties. In the low-power regime, the largest grain size was observed due to slow deposition rate. In the medium-power regime, the smallest grain size was found, which is attributed to insufficient time for the adatoms to migrate on substrate surface. In the high-power regime, relatively larger grain size was found due to very large ion bombardment energy which enhances the thermal migration of adatoms. Regardless of pure ZnO thin film or ZnO on glass, high transmittance (> 80%) in the visible region can be generally observed. However, the film thickness plays a more important role for controlling optical properties, especially in the UV region, than the applied RF power. In general, with properly coated ZnO thin film, we can obtain a glass substrate which is highly transparent in the visible region, is of good anti-UV characteristics, and is highly hydrophobic, which is highly suitable for applications in the glass industry.

Spectroscopic ellipsometry investigations of optical anisotropy in obliquely deposited hafnia thin films

Energy Technology Data Exchange (ETDEWEB)

Tokas, R. B., E-mail: tokasstar@gmail.com; Jena, Shuvendu; Thakur, S.; Sahoo, N. K. [Atomic & Molecular Physics Division, Bhabha Atomic Research Centre, Trombay, Mumbai-85 (India); Haque, S. Maidul; Rao, K. Divakar [Photonics & Nanotechnology Section, Atomic & Molecular Physics Division, Bhabha Atomic Research Centre facility, Visakhapatnam-530012 (India)

2016-05-23

In present work, HfO{sub 2} thin films have been deposited at various oblique incidences on Si substrates by electron beam evaporation. These refractory oxide films exhibited anisotropy in refractive index predictably due to special columnar microstructure. Spectroscopic ellipsometry being a powerful tool for optical characterization has been employed to investigate optical anisotropy. It was observed that the film deposited at glancing angle (80°) exhibits the highest optical anisotropy. Further, anisotropy was noticed to decrease with lower values of deposition angles while effective refractive index depicts opposite trend. Variation in refractive index and anisotropy has been explained in light of atomic shadowing during growth of thin films at oblique angles.

Optical properties of Cd Se thin films obtained by pyrolytic dew

International Nuclear Information System (INIS)

Perez G, A.M.; Tepantlan, C.S.; Renero C, F.

2006-01-01

In this paper the optical properties of Cd Se thin films obtained by spray pyrolysis are presented. The films are prepared by Sodium Seleno sulphate (Na 2 SSeO 3 ) and Cadmium Chloride (CdC 12 ) mixing in aqueous environment. Optical parameters of the films (refractive index, absorption coefficient and optical ban gap) were calculated from transmittance spectra. The obtained values of the optical ban gap are compared with the result obtained by other deposition method. (Author)

Optical and morphological characterization of bispyrazole thin films for gas sensing applications

Directory of Open Access Journals (Sweden)

Rachid Touzani

2014-11-01

Full Text Available The optical gas recognition capabilities of thin film layer of 4-[bis[(3,5-dimethyl-1H-pyrazol-1-ylmethyl]-amino]phenol deposed on quartz substrates were studied. The dynamic gas responses to the following analytes have been investigated as air pollutants (SO2, NO2, CO, CH4 and NH3. The spin-coated bispyrazole layer appears to have reversible response towards SO2 and a very low and irreversible response to NO2. The selectivity of the thin film based on bispyrazole layer with respect to other analytes was also examined and the present data show that the thin sensing layer in the presence of CO, CH4 and NH3 in low concentration does not influence its optical properties.

Optical properties of CdS thin films by (SILAR) method

International Nuclear Information System (INIS)

Ates, A.; Gurbulak, B.; Yildirim, M.

2004-01-01

Full text: CdS thin film was grown by Successive ionic layer adsorption and reaction (SILAR) technique on quartz substrate. The film homogeneous of film is good and the film colour obtained as orange. Optical properties of CdS thin film has been investigated as a function of temperature in the temperature range 10-320 K with 10 K steps. The band gap energy decreased with increasing temperature

Optical constants of CH3NH3PbBr3 perovskite thin films measured by spectroscopic ellipsometry

KAUST Repository

Alias, Mohd Sharizal

2016-07-14

The lack of optical constants information for hybrid perovskite of CH3NH3PbBr3 in thin films form can delay the progress of efficient LED or laser demonstration. Here, we report on the optical constants (complex refractive index and dielectric function) of CH3NH3PbBr3 perovskite thin films using spectroscopic ellipsometry. Due to the existence of voids, the refractive index of the thin films is around 8% less than the single crystals counterpart. The energy bandgap is around 2.309 eV as obtained from photoluminescence and spectrophotometry spectra, and calculated from the SE analysis. The precise measurement of optical constants will be useful in designing optical devices using CH3NH3PbBr3 thin films.

Characterization of ion-assisted induced absorption in A-Si thin-films used for multivariate optical computing

Science.gov (United States)

Nayak, Aditya B.; Price, James M.; Dai, Bin; Perkins, David; Chen, Ding Ding; Jones, Christopher M.

2015-06-01

Multivariate optical computing (MOC), an optical sensing technique for analog calculation, allows direct and robust measurement of chemical and physical properties of complex fluid samples in high-pressure/high-temperature (HP/HT) downhole environments. The core of this MOC technology is the integrated computational element (ICE), an optical element with a wavelength-dependent transmission spectrum designed to allow the detector to respond sensitively and specifically to the analytes of interest. A key differentiator of this technology is it uses all of the information present in the broadband optical spectrum to determine the proportion of the analyte present in a complex fluid mixture. The detection methodology is photometric in nature; therefore, this technology does not require a spectrometer to measure and record a spectrum or a computer to perform calculations on the recorded optical spectrum. The integrated computational element is a thin-film optical element with a specific optical response function designed for each analyte. The optical response function is achieved by fabricating alternating layers of high-index (a-Si) and low-index (SiO2) thin films onto a transparent substrate (BK7 glass) using traditional thin-film manufacturing processes (e.g., ion-assisted e-beam vacuum deposition). A proprietary software and process are used to control the thickness and material properties, including the optical constants of the materials during deposition to achieve the desired optical response function. The ion-assisted deposition is useful for controlling the densification of the film, stoichiometry, and material optical constants as well as to achieve high deposition growth rates and moisture-stable films. However, the ion-source can induce undesirable absorption in the film; and subsequently, modify the optical constants of the material during the ramp-up and stabilization period of the e-gun and ion-source, respectively. This paper characterizes the unwanted

Optical Analysis of Iron-Doped Lead Sulfide Thin Films for Opto-Electronic Applications

Science.gov (United States)

Chidambara Kumar, K. N.; Khadeer Pasha, S. K.; Deshmukh, Kalim; Chidambaram, K.; Shakil Muhammad, G.

Iron-doped lead sulfide thin films were deposited on glass substrates using successive ionic layer adsorption and reaction method (SILAR) at room temperature. The X-ray diffraction pattern of the film shows a well formed crystalline thin film with face-centered cubic structure along the preferential orientation (1 1 1). The lattice constant is determined using Nelson Riley plots. Using X-ray broadening, the crystallite size is determined by Scherrer formula. Morphology of the thin film was studied using a scanning electron microscope. The optical properties of the film were investigated using a UV-vis spectrophotometer. We observed an increase in the optical band gap from 2.45 to 3.03eV after doping iron in the lead sulfide thin film. The cutoff wavelength lies in the visible region, and hence the grown thin films can be used for optoelectronic and sensor applications. The results from the photoluminescence study show the emission at 500-720nm. The vibrating sample magnetometer measurements confirmed that the lead sulfide thin film becomes weakly ferromagnetic material after doping with iron.

Optical properties of the c-axis oriented LiNbO3 thin film

International Nuclear Information System (INIS)

Shandilya, Swati; Sharma, Anjali; Tomar, Monika; Gupta, Vinay

2012-01-01

C-axis oriented Lithium Niobate (LiNbO 3 ) thin films have been deposited onto epitaxially matched (001) sapphire substrate using pulsed laser deposition technique. Structural and optical properties of the thin films have been studied using the X-ray diffraction (XRD) and UV–Visible spectroscopy respectively. Raman spectroscopy has been used to study the optical phonon modes and defects in the c-axis oriented LiNbO 3 thin films. XRD analysis indicates the presence of stress in the as-grown LiNbO 3 thin films and is attributed to the small lattice mismatch between LiNbO 3 and sapphire. Refractive index (n = 2.13 at 640 nm) of the (006) LiNbO 3 thin films was found to be slightly lower from the corresponding bulk value (n = 2.28). Various factors responsible for the deviation in the refractive index of (006) LiNbO 3 thin films from the corresponding bulk value are discussed and the deviation is mainly attributed to the lattice contraction due to the presence of stress in deposited film.

High powered pulsed plasma enhanced deposition of thin film semiconductor and optical materials

International Nuclear Information System (INIS)

Llewellyn, I.P.; Sheach, K.J.A.; Heinecke, R.A.

1993-01-01

A glow discharge deposition technique is described which allows the deposition of a large range of high quality materials without the requirement for substrate heating. The method is differentiated from conventional plasma deposition techniques in that a much higher degree of dissociation is achieved in the gases prior to deposition, such that thermally activated surface reactions are no longer required in order to produce a dense film. The necessary discharge intensity (>300Wcm -3 ) is achieved using a high power radio frequency generator which is pulsed at a low duty cycle (1%) to keep the average energy of the discharge low (100W), in order to avoid the discharge heating the substrate. In addition, by varying the gas composition between discharge pulses, layered structures of materials can be produced, with a disordered interface about 8 A thick. Various uses of the technique in semiconductor and optical filter production are described, and the properties of films deposited using these technique are presented. (orig.)

Optical, structural and electrochromic behavior studies on nanocomposite thin film of aniline, o-toluidine and WO3

Science.gov (United States)

Najafi-Ashtiani, Hamed; Bahari, Ali

2016-08-01

In the field of materials for electrochromic (EC) applications much attention was paid to the derivatives of aniline. We report on the optical, structural and electrochromic properties of electrochromic thin film based on composite of WO3 nanoparticles and copolymer of aniline and o-toluidine prepared by electrochemical polymerization method on fluorine doped tin oxide (FTO) coated glass. The thin film was studied by X-ray diffraction (XRD) and Fourier transforms infrared (FTIR) spectroscopy. The morphology of prepared thin film was characterized by field emission scanning electron microscopy (FESEM), atomic force microscopy (AFM) and the thermal gravimetric analysis (TGA) as well. The optical spectra of nanocomposite thin film were characterized in the 200-900 nm wavelength range and EC properties of nanocomposite thin film were studied by cyclic voltammetry (CV). The calculation of optical band gaps of thin film exhibited that the thin film has directly allowed transition with the values of 2.63 eV on first region and 3.80 eV on second region. Dispersion parameters were calculated based on the single oscillator model. Finally, important parameters such as dispersion energy, oscillator energy and lattice dielectric constant were determined and compared with the data from other researchers. The nonlinear optical properties such as nonlinear optical susceptibility, nonlinear absorption coefficient and nonlinear refractive index were extracted. The obtained results of nanocomposite thin film can be useful for the optoelectronic applications.

Gold and silver thin film analysis by optical and neutron activation techniques

International Nuclear Information System (INIS)

Moharram, B.M.; El-Khatib, A.M.; Ammar, E.A.

1989-01-01

Thicknesses of gold and silver thin films have been determined by NAA technique. Reasonable agreement with conventional optical methods has been obtained, but the lower detection limit in the case of NAA is far better than in the optical method. (author)

The gridless plasma ion source (GIS) for plasma ion assisted optical coating

International Nuclear Information System (INIS)

You Dawei; Li Xiaoqian; Wang Yu; Lin Yongchang

2004-01-01

High-quality optical coating is a key technology for modern optics. Ion-assisted deposition technology was used to improve the vaporized coating in 1980's. The GIS (gridless ion source), which is an advanced plasma source for producing a high-quality optical coating in large area, can produce a large area uniformity>1000 mm (diameter), a high ion current density ∼0.5 mA/cm 2 , 20 eV-200 eV energetic plasma ions and can activate reactive gas and film atoms. Now we have developed a GIS system. The GIS and the plasma ion-assisted deposition technology are investigated to achieve a high-quality optical coating. The GIS is a high power and high current source with a power of 1 kW-7.5 kW, a current of 10 A- 70 A and an ion density of 200 μA/cm 2 -500 μA/cm 2 . Because of the special magnetic structure, the plasma-ion extraction efficiency has been improved to obtain a maximum ion density of 500 μA/cm 2 in the medium power (∼4 kW) level. The GIS applied is of a special cathode structure, so that the GIS operation can be maintained under a rather low power and the lifetime of cathode will be extended. The GIS has been installed in the LPSX-1200 type box coating system. The coated TiO 2 , SiO 2 films such as antireflective films with the system have the same performance reported by Leybold Co, 1992, along with a controllable refractive index and film structure. (authors)

Optical and electrical properties of nickel xanthate thin films

Indian Academy of Sciences (India)

Administrator

metal-xanthate thin films' production, nor their optical, electrical properties and .... vibration of –CH3 at 894 cm–1, (vii) the symmetric bend- ing vibration of C–O–C at 458 .... vity values are the two most important factors, affecting band width.

Optical and morphological characterizations of pyronin dye-poly (vinyl alcohol) thin films formed on glass substrates

International Nuclear Information System (INIS)

Meral, Kadem; Arik, Mustafa; Onganer, Yavuz

2016-01-01

Thin films of pyronin dye mixed with poly(vinyl alcohol) (PVA) on glass substrate were prepared by using spin-coating technique. The optical and morphological properties of the thin films were studied by UV-Vis., steady-state fluorescence spectroscopies and atomic force microscopy (AFM). The thin films on glass substrate were fabricated at various [PVA]/[dye] (P/D) ratios. Hence, the monomeric and H-aggregates thin films of pyronin dye mixed with PVA were formed as a function of the dye and PVA concentration. It was determined that while the monomeric thin films showed strong fluorescence, the formation of H-aggregates in the thin film caused to decreasing the fluorescence intensity. AFM studies demonstrated that the morphology of the thin film was drastically varied with changing the optical property of the thin film such as monomeric and H-aggregates thin films.

Optical and morphological characterizations of pyronin dye-poly (vinyl alcohol) thin films formed on glass substrates

Energy Technology Data Exchange (ETDEWEB)

Meral, Kadem, E-mail: kademm@atauni.edu.tr; Arik, Mustafa, E-mail: marik@tatauni.edu.tr; Onganer, Yavuz, E-mail: yonganer@atauni.edu.tr [Department of Chemistry, Faculty of Sciences, Atatürk University, 25240 Erzurum (Turkey)

2016-04-18

Thin films of pyronin dye mixed with poly(vinyl alcohol) (PVA) on glass substrate were prepared by using spin-coating technique. The optical and morphological properties of the thin films were studied by UV-Vis., steady-state fluorescence spectroscopies and atomic force microscopy (AFM). The thin films on glass substrate were fabricated at various [PVA]/[dye] (P/D) ratios. Hence, the monomeric and H-aggregates thin films of pyronin dye mixed with PVA were formed as a function of the dye and PVA concentration. It was determined that while the monomeric thin films showed strong fluorescence, the formation of H-aggregates in the thin film caused to decreasing the fluorescence intensity. AFM studies demonstrated that the morphology of the thin film was drastically varied with changing the optical property of the thin film such as monomeric and H-aggregates thin films.

Single-shot optical conductivity measurement of dense aluminum plasmas

International Nuclear Information System (INIS)

Churina, I. V.; Cho, B.-I.; Bernstein, A.; Stoker, D. S.; Dalton, A.; Symes, D. R.; Ditmire, T.

2009-01-01

The optical conductivity of a dense femtosecond laser-heated aluminum plasma heated to 0.1-1.5 eV was measured using frequency-domain interferometry with chirped pulses, permitting simultaneous observation of optical probe reflectivity and probe pulse phase shift. Coupled with published models of bound-electron contributions to the conductivity, these two independent experimental data yielded a direct measurement of both real and imaginary components of the plasma conductivity.

Thickness Dependent Optical Properties of Sol-gel based MgF2 – TiO2 Thin Films

Directory of Open Access Journals (Sweden)

Siddarth Krishnaraja Achar

2018-04-01

Full Text Available MgF2 – TiO2 thin films were prepared by cost effective solgel technique onto glass substrates and optical parameters were determined by envelope technique. Thin films were characterized by optical transmission spectroscopy in the spectral range 290 – 1000 nm. The refractive index, extinction coefficient, Optical thickness and band gap dependency on thickness were evaluated. Thickness dependency of thin films showed direct allowed transition with band gap of 3.66 to 3.73 eV.

Magnetic and magneto-optical properties of FeRh thin films

International Nuclear Information System (INIS)

Inoue, Sho; Nam, Nguyen T.; Phuoc, Nguyen N.; Cao Jiangwei; Yu Ko, Hnin Yu; Suzuki, Takao

2008-01-01

The magnetic and magneto-optical properties of FeRh thin films epitaxially deposited onto MgO(1 0 0) substrates by RF sputter-deposition system have been investigated in conjunction with the structure. An intriguing virgin effect has been found in the M-T curves of the as-deposited FeRh thin films, which is presumably interpreted in term of a change in structural phase when heating. Also, a (negative) maximum peak of Kerr rotation at around 3.8 eV has been observed when FeRh thin films are in ferromagnetic state. The polar Kerr rotation angle is found to increase at temperatures above 100 deg. C, which corresponds to the antiferromagnet (AF)-ferromagnet (FM) transition of FeRh thin films

Nanostructured pyronin Y thin films as a new organic semiconductor: Linear/nonlinear optics, band gap and dielectric properties

Energy Technology Data Exchange (ETDEWEB)

Zahran, H.Y. [Metallurgical Lab.1, Nanoscience Laboratory for Environmental and Bio-medical Applications (NLEBA), Semiconductor Lab., Department of Physics, Faculty of Education, Ain Shams University, Roxy, 11757 Cairo (Egypt); Advanced Functional Materials & Optoelectronic Laboratory (AFMOL), Department of Physics, Faculty of Science, King Khalid University, P.O. Box 9004, Abha (Saudi Arabia); Yahia, I.S., E-mail: dr_isyahia@yahoo.com [Metallurgical Lab.1, Nanoscience Laboratory for Environmental and Bio-medical Applications (NLEBA), Semiconductor Lab., Department of Physics, Faculty of Education, Ain Shams University, Roxy, 11757 Cairo (Egypt); Advanced Functional Materials & Optoelectronic Laboratory (AFMOL), Department of Physics, Faculty of Science, King Khalid University, P.O. Box 9004, Abha (Saudi Arabia); Alamri, F.H. [Advanced Functional Materials & Optoelectronic Laboratory (AFMOL), Department of Physics, Faculty of Science, King Khalid University, P.O. Box 9004, Abha (Saudi Arabia)

2017-05-15

Pyronin Y dye (PY) is a kind of xanthene derivatives. Thin films of pyronin Y were deposited onto highly cleaned glass substrates using low-cost/spin coating technique. The structure properties of pyronin Y thin films with different thicknesses were investigated by using X-ray diffraction (XRD) and atomic force microscope (AFM). PY thin films for all the studied thicknesses have an amorphous structure supporting the short range order of the grain size. AFM supports the nanostructure with spherical/clusters morphologies of the investigated thin films. The optical constants of pyronin Y thin films for various thicknesses were studied by using UV–vis–NIR spectrophotometer in the wavelength range 350–2500 nm. The transmittance T(λ), reflectance R(λ) spectral and absorbance (abs(λ)) were obtained for all film thicknesses at room temperature and the normal light incident. These films showed a high transmittance in the wide scale wavelengths. For different thicknesses of the studied thin films, the optical band gaps were determined and their values around 2 eV. Real and imaginary dielectric constants, dissipation factor and the nonlinear optical parameters were calculated in the wavelengths to the range 300–2500 nm. The pyronin Y is a new organic semiconductor with a good optical absorption in UV–vis regions and it is suitable for nonlinear optical applications. - Highlights: • Pyronin Y (PY) nanostructured thin films were deposited by using spin coating technique. • XRD/AFM were used to study the structure of PY films. • The optical band gap was calculated on the basis of Tauc's model. • Linear/nonlinear optical parameters are calculated and interpreted via the applied optical theories. • PY thin films is a new organic semiconductor for its application in optoelectronic devices.

Optical response from functionalized atomically thin nanomaterials

Energy Technology Data Exchange (ETDEWEB)

Malic, Ermin; Berghaeuser, Gunnar; Feierabend, Maja [Department of Physics, Chalmers University of Technology, Gothenburg (Sweden); Knorr, Andreas [Institut fuer Theoretische Physik, Technische Universitaet Berlin (Germany)

2017-10-15

Chemical functionalization of atomically thin nanostructures presents a promising strategy to create new hybrid nanomaterials with remarkable and externally controllable properties. Here, we review our research in the field of theoretical modeling of carbon nanotubes, graphene, and transition metal dichalcogenides located in molecular dipole fields. In particular, we provide a microscopic view on the change of the optical response of these technologically promising nanomaterials due to the presence of photo-active spiropyran molecules. The feature article presents a review of recent theoretical work providing microscopic view on the optical response of chemically functionalized carbon nanotubes, graphene, and monolayered transition metal dichalcogenides. In particular, we propose a novel sensor mechanism based on the molecule-induced activation of dark excitons. This results in a pronounced additional peak presenting an unambiguous optical fingerprint for the attached molecules. (copyright 2017 by WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Studies on nonlocal optical nonlinearity of Sr–CuO–polyvinyl alcohol nanocomposite thin films

International Nuclear Information System (INIS)

Tamgadge, Y.S.; Talwatkar, S.S.; Sunatkari, A.L.; Pahurkar, V.G.; Muley, G.G.

2015-01-01

Thermally induced nonlocal nonlinear optical properties of strontium (Sr) doped CuO-polyvinyl alcohol (PVA) nanocomposite thin films under continuous wave Helium–Neon laser illumination are investigated by single beam Z-scan method. Undoped and Sr doped CuO nanoparticles (NPs) using L-arginine as surface modifying agent have been synthesized by wet chemical method and their thin films with PVA as host matrix have been obtained by spin coating technique. Structure, morphology and purity of prepared CuO NPs and thin films have been studied by X-ray diffraction, high-resolution transmission electron microscopy, field emission scanning electron microscopy and energy dispersive X-ray absorption spectroscopy. Fourier transform infra-red spectrum attests the role of L-arginine as surface modifier and ultraviolet–visible absorption studies reveal that the excitonic absorption wavelengths are blue shifted for strontium doped CuO NPs. Sr doped CuO NPs with average particle size of 7 nm and calculated optical band gap up to 2.54 eV have been reported. All Sr doped CuO–PVA nanocomposite thin films show enhanced nonlinear refraction and absorption best suited for optical limiting applications. Observed effects have been attributed to thermal lensing effect. - Highlights: • Pure and strontium doped CuO–polyvinyl alcohol nanocomposite thin films are prepared. • Z-scan studies of thin films are performed under continuous wave helium–neon laser. • Enhanced values of third order nonlinear optical coefficients are obtained for all films. • Thermally induced self-defocusing and reverse saturable absorption have been discussed.

Studies on nonlocal optical nonlinearity of Sr–CuO–polyvinyl alcohol nanocomposite thin films

Energy Technology Data Exchange (ETDEWEB)

Tamgadge, Y.S. [Department of Physics, Mahatma Fule Arts, Commerce and S C Science Mahavidyalaya, Warud, Dist. Amravati (MS), 444906 (India); Talwatkar, S.S. [Department of Physics, D K Marathe and N G Acharya College, Chembur, Mumbai (MS) 440071 (India); Sunatkari, A.L. [Department of Physics, Siddharth College of Arts, Science and Commerce, Fort, Mumbai (MS) 440001 (India); Pahurkar, V.G. [Department of Physics, Sant Gadge Baba Amravati University, Amravati (MS), 444602 (India); Muley, G.G., E-mail: gajananggm@yahoo.co.in [Department of Physics, Sant Gadge Baba Amravati University, Amravati (MS), 444602 (India)

2015-11-30

Thermally induced nonlocal nonlinear optical properties of strontium (Sr) doped CuO-polyvinyl alcohol (PVA) nanocomposite thin films under continuous wave Helium–Neon laser illumination are investigated by single beam Z-scan method. Undoped and Sr doped CuO nanoparticles (NPs) using L-arginine as surface modifying agent have been synthesized by wet chemical method and their thin films with PVA as host matrix have been obtained by spin coating technique. Structure, morphology and purity of prepared CuO NPs and thin films have been studied by X-ray diffraction, high-resolution transmission electron microscopy, field emission scanning electron microscopy and energy dispersive X-ray absorption spectroscopy. Fourier transform infra-red spectrum attests the role of L-arginine as surface modifier and ultraviolet–visible absorption studies reveal that the excitonic absorption wavelengths are blue shifted for strontium doped CuO NPs. Sr doped CuO NPs with average particle size of 7 nm and calculated optical band gap up to 2.54 eV have been reported. All Sr doped CuO–PVA nanocomposite thin films show enhanced nonlinear refraction and absorption best suited for optical limiting applications. Observed effects have been attributed to thermal lensing effect. - Highlights: • Pure and strontium doped CuO–polyvinyl alcohol nanocomposite thin films are prepared. • Z-scan studies of thin films are performed under continuous wave helium–neon laser. • Enhanced values of third order nonlinear optical coefficients are obtained for all films. • Thermally induced self-defocusing and reverse saturable absorption have been discussed.

Evaluating interfacial adhesion properties of Pt/Ti thin-film by using acousto-optic technique

Energy Technology Data Exchange (ETDEWEB)

Park, Hae Sung [Graduate School of Automotive Engineering, Seoul National University of Science and Technology, Seoul (Korea, Republic of); Didie, David; Yoshida, Sanichiro [Dept. of Chemistry and Physics, Southeastern Louisiana University, Hammond (United States); Park, Ik Keun [Dept. of Mechanical and Automotive Engineering, Seoul National University of Science and Technology, Seoul (Korea, Republic of)

2016-06-15

We propose an acousto-optic technique for the nondestructive evaluation of adhesion properties of a Pt/Ti thin-film interface. Since there are some problems encountered when using prevailing techniques to nondestructively evaluate the interfacial properties of micro/nano-scale thin-films, we applied an interferometer that combined the acoustic and optical methods. This technique is based on the Michelson interferometer but the resultant surface of the thin film specimen makes interference instead of the mirror when the interface is excited from the acoustic transducer at the driving frequency. The thin film shows resonance-like behavior at a certain frequency range, resulting in a low-contrast fringe pattern. Therefore, we represented quantitatively the change in fringe pattern as a frequency spectrum and discovered the possibility that the interfacial adhesion properties of a thin film can be evaluated using the newly proposed technique.

Effect of the hydrogen flow rate on the structural and optical properties of hydrogenated amorphous silicon thin films prepared by plasma enhanced chemical vapor deposition

Energy Technology Data Exchange (ETDEWEB)

Ben Amor, Sana; Dimassi, Wissem; Ali Tebai, Mohamed; Ezzaouia, Hatem [Photovoltaic Laboratory Research and Technology Centre of Energy, Borj-Cedria Science and Technology Park, BP 95, 2050 Hammam-Lif (Tunisia)

2012-10-15

Hydrogenated amorphous silicon (a-Si:H) thin films were deposited from pure silane (SiH{sub 4}) and hydrogen (H{sub 2}) gas mixture by plasma enhanced chemical vapor deposition (PECVD) method at low temperature (400 C) using high rf power (60 W). The structural and optical properties of these films are systematically investigated as a function of the flow rate of hydrogen (F{sub H2}).The surface morphology is analyzed by atomic force microscopy (AFM). The characterization of these films with low angle X-ray diffraction revealed that the crystallite size in the films tends to decrease with increase in (F{sub H2}). The Fourier transform infrared (FTIR) spectroscopic analysis showed that at low values of (F{sub H2}),the hydrogen bonding in Si:H films shifts from di-hydrogen (Si-H{sub 2}) and (Si-H{sub 2})n complexes to the mono-hydrogen (Si-H) bonding configuration. Finally, for these optimized conditions, the deposition rate decreases with increasing (F{sub H2}). (copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

High speed manyframe optical methods for plasma diagnostics

International Nuclear Information System (INIS)

Erokhin, A.A.; Shikanov, A.S.; Sklizkov, G.V.; Zakharenkov, Yu.A.; Zorev, N.N.

1979-01-01

A complex of active optical plasma and strong ionized shock wave diagnostics is described. The complex consisted of a specially developed high speed manyframe systems of shadow, schlieren and interferometric photography. The comparison of results obtained by a simultaneous registration of investigated object by means of different optical methods allowed us to determine optimal employment range for the methods. The sensitivity, temporal and space resolution of each optical method under conditions of high probe radiation refraction are discussed. The application boundaries of these methods for ionized shock wave investigation were found to depend on the shock wave front width. The methods described were used for the study of laser-produced plasma phenomena, occuring in the experiments on powerful nine-channel laser installation ''Kalmar''. (author)

Effects of SF6 plasma treatment on the properties of InGaZnO thin films

Science.gov (United States)

Choi, Jinsung; Bae, Byung Seong; Yun, Eui-Jung

2018-03-01

The effects of sulfur hexafluoride (SF6) plasma on the properties of amorphous InGaZnO (a-IGZO) thin films were examined. The properties of the a-IGZO thin films were characterized by Hall effect measurement, dynamic secondary ion mass spectroscopy (SIMS), and X-ray photoelectron spectroscopy (XPS). The IGZO thin films treated with SF6 plasma before annealing had a very high resistance mainly owing to the inclusion of S into the film surface, as evidenced by SIMS profiles. On the other hand, the samples treated with SF6 plasma after annealing showed better electrical properties with a Hall mobility of 10 cm2/(V·s) than the untreated samples or the samples SF6 plasma-treated before annealing. This was attributed to the increase in the number of oxygen vacancy defects in the a-IGZO thin films owing to the enhanced out-diffusion of O to the ambient and the increase in the number of F-related donor defects originating from the incorporation of a much larger amount of F than of S into the film surface, which were confirmed by XPS and SIMS.

UV and plasma treatment of thin silver layers and glass surfaces

Energy Technology Data Exchange (ETDEWEB)

Hluschi, J.H. [University of Applied Sciences and Arts, Von-Ossietzky-Str. 99, D-37085 Goettingen (Germany); Helmke, A. [University of Applied Sciences and Arts, Von-Ossietzky-Str. 99, D-37085 Goettingen (Germany); Roth, P. [University of Applied Sciences and Arts, Von-Ossietzky-Str. 99, D-37085 Goettingen (Germany); Boewer, R. [Interpane Glasbeschichtungsgesellschaft mbH and Co KG, Sohnreystr. 21, D-37697 Lauenfoerde (Germany); Herlitze, L. [Interpane Glasbeschichtungsgesellschaft mbH and Co KG, Sohnreystr. 21, D-37697 Lauenfoerde (Germany); Vioel, W. [University of Applied Sciences and Arts, Von-Ossietzky-Str. 99, D-37085 Goettingen (Germany)]. E-mail: vioel@hawk-hhg.de

2006-11-10

Thin silver layers can be modified by treatment with UV radiation or a plasma discharge. UV treatment at a wavelength of {lambda}=308 -bar nm improves the layer properties, thus leading to an enhancement of the layers IR reflectivity. For the purpose of in situ-measurement the sheet resistance is recorded during the process. Due to the Hagen-Rubens-Relation [E. Hagen, H. Rubens, Ann. Phys. 11 (1903) 873]-bar the sheet resistance is linked to the IR reflectivity of thin metal-films. A pretreatment of uncoated glass using a dielectric barrier discharge activates and cleans its surface, thus leading to an increase in adhesion of thin layers.

UV and plasma treatment of thin silver layers and glass surfaces

International Nuclear Information System (INIS)

Hluschi, J.H.; Helmke, A.; Roth, P.; Boewer, R.; Herlitze, L.; Vioel, W.

2006-01-01

Thin silver layers can be modified by treatment with UV radiation or a plasma discharge. UV treatment at a wavelength of λ=308 -bar nm improves the layer properties, thus leading to an enhancement of the layers IR reflectivity. For the purpose of in situ-measurement the sheet resistance is recorded during the process. Due to the Hagen-Rubens-Relation [E. Hagen, H. Rubens, Ann. Phys. 11 (1903) 873]-bar the sheet resistance is linked to the IR reflectivity of thin metal-films. A pretreatment of uncoated glass using a dielectric barrier discharge activates and cleans its surface, thus leading to an increase in adhesion of thin layers

Fabrication of Au/graphene oxide/Ag sandwich structure thin film and its tunable energetics and tailorable optical properties

OpenAIRE

Ruijin Hong; Jialin Ji; Chunxian Tao; Daohua Zhang; Dawei Zhang

2017-01-01

Au/graphene oxide/Ag sandwich structure thin film was fabricated. The effects of graphene oxide (GO) and bimetal on the structure and optical properties of metal silver films were investigated by X-ray diffraction (XRD), optical absorption, and Raman intensity measurements, respectively. Compared to silver thin film, Au/graphene oxide/Ag sandwich structure composite thin films were observed with wider optical absorption peak and enhanced absorption intensity. The Raman signal for Rhodamine B ...

Investigations of electrical and optical properties of functional TCO thin films

Directory of Open Access Journals (Sweden)

Domaradzki Jarosław

2015-06-01

Full Text Available Transparent conducting oxide (TCO films of indium-tin-oxide were evaporated on the surface of silicon wafers after phosphorous diffusion and on the reference glass substrates. The influence of deposition process parameters (electron beam current, oxygen flow and the substrate temperature on optical and electrical properties of evaporated thin films were investigated by means of resistivity measurements and optical spectrophotometry. The performance of prepared thin films was judged by calculated figure of merit and the best result was obtained for the sample deposited on the substrate heated to the 100 °C and then removed from the deposition chamber and annealed in an air for 5 minutes at 400 °C. Refractive index and extinction coefficient were evaluated based on measured transmission spectra and used for designing of antireflection coating for solar cell. The obtained results showed that prepared TCO thin films are promising as a part of counter electrode in crystalline silicon solar cell construction.

Crystalline silicon thin film growth by ECR plasma CVD for solar cells

International Nuclear Information System (INIS)

Licai Wang

1999-07-01

This thesis describes the background, motivation and work carried out towards this PhD programme entitled 'Crystalline Silicon Thin Film Growth by ECR Plasma CVD for Solar Cells'. The fundamental principles of silicon solar cells are introduced with a review of silicon thin film and bulk solar cells. The development and prospects for thin film silicon solar cells are described. Some results of a modelling study on thin film single crystalline solar cells are given which has been carried out using a commercially available solar cell simulation package (PC-1D). This is followed by a description of thin film deposition techniques. These include Chemical Vapour Deposition (CVD) and Plasma-Assisted CVD (PACVD). The basic theory and technology of the emerging technique of Electron Cyclotron Resonance (ECR) PACVD, which was used in this research, are introduced and the potential advantages summarised. Some of the basic methods of material and cell characterisation are briefly described, together with the work carried out in this research. The growth by ECR PACVD at temperatures 2 illumination. The best efficiency in the ECR grown structures was 13.76% using an epitaxial emitter. Cell performance was analysed in detail and the factors controlling performance identified by fitting self-consistently the fight and dark current-voltage and spectral response data using PC-1D. Finally, the conclusions for this research and suggestions for further work are outlined. (author)

Low temperature growth of gallium oxide thin films via plasma enhanced atomic layer deposition

NARCIS (Netherlands)

O'Donoghue, R.; Rechmann, J.; Aghaee, M.; Rogalla, D.; Becker, H.-W.; Creatore, M.; Wieck, A.D.; Devi, A.P.K.

2017-01-01

Herein we describe an efficient low temperature (60–160 °C) plasma enhanced atomic layer deposition (PEALD) process for gallium oxide (Ga2O3) thin films using hexakis(dimethylamido)digallium [Ga(NMe2)3]2 with oxygen (O2) plasma on Si(100). The use of O2 plasma was found to have a significant

Hydrodynamic optical-field-ionized plasma channels

Science.gov (United States)

Shalloo, R. J.; Arran, C.; Corner, L.; Holloway, J.; Jonnerby, J.; Walczak, R.; Milchberg, H. M.; Hooker, S. M.

2018-05-01

We present experiments and numerical simulations which demonstrate that fully ionized, low-density plasma channels could be formed by hydrodynamic expansion of plasma columns produced by optical field ionization. Simulations of the hydrodynamic expansion of plasma columns formed in hydrogen by an axicon lens show the generation of 200 mm long plasma channels with axial densities of order ne(0 ) =1 ×1017cm-3 and lowest-order modes of spot size WM≈40 μ m . These simulations show that the laser energy required to generate the channels is modest: of order 1 mJ per centimeter of channel. The simulations are confirmed by experiments with a spherical lens which show the formation of short plasma channels with 1.5 ×1017cm-3≲ne(0 ) ≲1 ×1018cm-3 and 61 μ m ≳WM≳33 μ m . Low-density plasma channels of this type would appear to be well suited as multi-GeV laser-plasma accelerator stages capable of long-term operation at high pulse repetition rates.

Transparent thin film polarizing and optical control systems

Directory of Open Access Journals (Sweden)

Nelson V. Tabiryan

2011-06-01

Full Text Available We show that a diffractive waveplate can be combined with a phase retardation film for fully converting light of arbitrary polarization state into a polarized light. Incorporating a photonic bandgap layer into a system of such polarizers that unify different polarization states in the input light into a single polarization state at its output, rather than absorbing or reflecting half of it, we developed and demonstrated a polarization-independent optical controller capable of switching between transmittive and reflective states. The transition between those states is smoothly controlled with low-voltage and low-power sources. Using versatile fabrication methods, this “universally polarizing optical controller” can be integrated into a thin package compatible with a variety of display, spatial light modulation, optical communication, imaging and other photonics systems.

Determining thin film properties by fitting optical transmittance

International Nuclear Information System (INIS)

Klein, J.D.; Yen, A.; Cogan, S.F.

1990-01-01

The optical transmission spectra of rf sputtered tungsten oxide films on glass substrates were modeled to determine absorption edge behavior, film thickness, and index of refraction. Removal of substrate reflection and absorption phenomena from the experimental spectra allowed direct examination of thin film optical characteristics. The interference fringe pattern allows determination of the film thickness and the dependence of the real index of refraction on wavelength. Knowledge of the interference fringe behavior in the vicinity of the absorption edge was found essential to unambiguous determination of the optical band gap. In particular, the apparently random deviations commonly observed in the extrapolation of as-acquired data are eliminated by explicitly considering interference fringe phenomena. The multivariable optimization fitting scheme employed allows air-film-substrate reflection losses to be compensated without making reflectance measurements

Electron-Beam Produced Air Plasma: Optical Measurement of Beam Current

Science.gov (United States)

Vidmar, Robert; Stalder, Kenneth; Seeley, Megan

2006-10-01

Experiments to quantify the electron beam current and distribution of beam current in air plasma are discussed. The air plasma is produced by a 100-keV 10-mA electron beam source that traverses a transmission window into a chamber with air as a target gas. Air pressure is between 1 mTorr and 760 Torr. Strong optical emissions due to electron impact ionization are observed for the N2 2^nd positive line at 337.1 nm and the N2^+ 1^st negative line at 391.4 nm. Calibration of optical emissions using signals from the isolated transmission window and a Faraday plate are discussed. The calibrated optical system is then used to quantify the electron distribution in the air plasma.

Correlation of morphology and barrier properties of thin microwave plasma polymer films on metal substrate

International Nuclear Information System (INIS)

Barranco, V.; Carpentier, J.; Grundmeier, G.

2004-01-01

The barrier properties of thin model organosilicon plasma polymers layers on iron are characterised by means of electrochemical impedance spectroscopy (EIS). Tailored thin plasma polymers of controlled morphology and chemical composition were deposited from a microwave discharge. By the analysis of the obtained impedance diagrams, the evolution of the water uptake φ, coating resistance and polymer capacitance with immersion time were monitored and the diffusion coefficients of the water through the films were calculated. The impedance data correlated well with the chemical structure and morphology of the plasma polymer films with a thickness of less than 100 nm. The composition of the films were determined by means of infrared reflection absorption spectroscopy (IRRAS), X-ray photoelectron spectroscopy (XPS) and time-of-flight secondary ion mass spectrometry (ToF-SIMS). The morphology of the plasma polymer surface and the interface between the plasma polymer and the metal were characterised using atomic force microscopy (AFM). It could be shown that, at higher pressure, the film roughness increases which is probably due to the adsorption of plasma polymer nanoparticles formed in the plasma bulk and the faster film growth. This leads to voids with a size of a few tens of nanometers at the polymer/metal interface. The film roughness increases from the interface to the outer surface of the film. By lowering the pressure and thereby slowing the deposition rate, the plasma polymers perfectly imitate the substrate topography and lead to an excellent blocking of the metal surface. Moreover, the ratio of siloxane bonds to methyl-silyl groups increases which implies that the crosslink density is higher at lower deposition rate. The EIS data consistently showed higher coating resistance as well as lower interfacial capacitance values and a better stability over time for the film deposited at slower pressure. The diffusion coefficient of water in thin and ultra-thin plasma

Experimental and theoretical investigations of structural and optical properties of CIGS thin films

Energy Technology Data Exchange (ETDEWEB)

Chandramohan, M., E-mail: chandramohan59@yahoo.co.in [Department of Physics, Park college of Engineering and Tecknology, Coimbatore-641 659 (India); Velumani, S., E-mail: vels64@yahoo.com [Centro de Investigacion y de Estudios Avanzados del I.P.N.(CINVESTAV), Av. Instituto Politecnico Nacional 2508 Col. San Pedro Zacatenco 07360, Mexico D.F (Mexico); Venkatachalam, T., E-mail: atvenkatachalam@yahoo.com [Department of Physics, Coimbatore Institute of Technology, Coimbatore-14. India (India)

2010-10-25

Experimental and theoretical studies of the structural and optical properties of Copper Indium Gallium diSelenide thin films have been performed. Thin films of CIGS were deposited on glass substrates by chemical bath deposition. From the XRD results of the films, it is found that the films are of chalcopyrite type structure. The lattice parameter were determined as a = 5.72 A and c = 11.462 A. The optical properties of the thin films were carried out with the help of spectrophotometer. First principles density functional theory calculations of the band structure, density of states and effective masses of electrons and holes of the CIGS crystals have been done by computer simulations. The experimental data and theoretically calculated data have demonstrated good agreement.

Improved electrochemical performances of oxygen plasma treated LiMn2O4 thin films

International Nuclear Information System (INIS)

Chen, C C; Chiu, K-F; Lin, K M; Lin, H C; Yang, C-R; Wang, F M

2007-01-01

LiMn 2 O 4 spinel thin films were deposited by radio frequency (rf) magnetron sputtering followed by annealing at 600 0 C in air.The films were then post-treated with an rf driven oxygen plasma. The crystallization and surface morphology of LiMn 2 O 4 thin films were seen to change with rf power. The treated samples were tested under harsh conditions such as deep discharge to 1.5 V and cycling at elevated temperature of 60 0 C to verify the electrochemical performances of LiMn 2 O 4 cathodes. The oxygen plasma treatments improved the electrochemical properties of LiMn 2 O 4 thin films significantly. As the cells were cycled in the range of 4.5-2.0 V at 60 0 C, the samples treated at a proper rf power of 50 W exhibited an initial capacity greater than ∼400 mAh g -1 with reasonable cycling stability. The results were attributed to the change of morphology and the formation of a surface layer induced by the oxygen plasma irradiation

Surface characterization of hydrophobic thin films deposited by inductively coupled and pulsed plasmas

International Nuclear Information System (INIS)

Kim, Youngsoo; Lee, Ji-Hye; Kim, Kang-Jin; Lee, Yeonhee

2009-01-01

Different fluorocarbon thin films were deposited on Si substrates using a plasma-polymerization method. Fluorine-containing hydrophobic thin films were obtained by inductively coupled plasma (ICP) and pulsed plasma (PP) with a mixture of fluorocarbon precursors C 2 F 6 , C 3 F 8 , and c-C 4 F 8 and the unsaturated hydrocarbons of C 2 H 2 . The influence on the fluorocarbon surfaces of the process parameters for plasma polymerization, including the gas ratio and the plasma power, were investigated under two plasma-polymerized techniques with different fluorocarbon gas precursors. The hydrophobic properties, surface morphologies, and chemical compositions were elucidated using water contact angle measurements, field emission-scanning electron microscope, x-ray photoelectron spectroscopy (XPS), Fourier transform infrared spectroscopy (FT-IR), and time-of-flight secondary ion mass spectrometry (TOF-SIMS). In this study, the ICP technique provides coarser grained films and more hydrophobic surfaces as well as a higher deposition rate compared to the PP technique. XPS, FT-IR, and TOF-SIMS analyses indicated that the ICP technique produced more fluorine-related functional groups, including CF 2 and CF 3 , on the surface. From the curve-fitted XPS results, fluorocarbon films grown under ICP technique exhibited less degree of cross-linking and higher CF 2 concentrations than those grown under PP technique.

Optical and Electrical Properties of Copper Oxide Thin Films Synthesized by Spray Pyrolysis Technique

Directory of Open Access Journals (Sweden)

S. S. Roy

2015-08-01

Full Text Available Copper oxide (CuO thin films have been synthesized on to glass substrates at different temperatures in the range 250-450 °C by spray pyrolysis technique from aqueous solution using cupric acetate Cu(CH3COO2·H2O as a precursor. The structure of the deposited CuO thin films characterized by X-ray diffraction, the surface morphology was observed by a scanning electron microscope, the presence of elements was detected by energy dispersive X-ray analysis, the optical transmission spectra was recorded by ultraviolet-visible spectroscopy and electrical resistivity was studied by Van-der Pauw method. All the CuO thin films, irrespective of growth temperature, showed a monoclinic structure with the main CuO (111 orientation, and the crystallite size was about 8.4784 Å for the thin film synthesized at 350 °C. The optical transmission of the as-deposited film is found to decrease with the increase of substrate temperature, the optical band gap of the thin films varies from 1.90 to 1.60 eV and the room temperature electrical resistivity varies from 30 to18 Ohm·cm for the films grown at different substrate temperatures.

Optical constants and structural properties of thin gold films

DEFF Research Database (Denmark)

Yakubovsky, Dmitry I.; Arsenin, Aleksey V.; Stebunov, Yury V.

2017-01-01

We report a comprehensive experimental study of optical and electrical properties of thin polycrystalline gold films in a wide range of film thicknesses (from 20 to 200 nm). Our experimental results are supported by theoretical calculations based on the measured morphology of the fabricated gold...... rules for thin-film plasmonic and nanophotonic devices....... films. We demonstrate that the dielectric function of the metal is determined by its structural morphology. Although the fabrication process can be absolutely the same for different films, the dielectric function can strongly depend on the film thickness. Our studies show that the imaginary part...

Electromagnetic and optical characteristics of Nb5+-doped double-crossover and salmon DNA thin films

Science.gov (United States)

Babu Mitta, Sekhar; Reddy Dugasani, Sreekantha; Jung, Soon-Gil; Vellampatti, Srivithya; Park, Tuson; Park, Sung Ha

2017-10-01

We report the fabrication and physical characteristics of niobium ion (Nb5+)-doped double-crossover DNA (DX-DNA) and salmon DNA (SDNA) thin films. Different concentrations of Nb5+ ([Nb5+]) are coordinated into the DNA molecules, and the thin films are fabricated via substrate-assisted growth (DX-DNA) and drop-casting (SDNA) on oxygen plasma treated substrates. We conducted atomic force microscopy to estimate the optimum concentration of Nb5+ ([Nb5+]O = 0.08 mM) in Nb5+-doped DX-DNA thin films, up to which the DX-DNA lattices maintain their structures without deformation. X-ray photoelectron spectroscopy (XPS) was performed to probe the chemical nature of the intercalated Nb5+ in the SDNA thin films. The change in peak intensities and the shift in binding energy were witnessed in XPS spectra to explicate the binding and charge transfer mechanisms between Nb5+ and SDNA molecules. UV-visible, Raman, and photoluminescence (PL) spectra were measured to determine the optical properties and thus investigate the binding modes, Nb5+ coordination sites in Nb5+-doped SDNA thin films, and energy transfer mechanisms, respectively. As [Nb5+] increases, the absorbance peak intensities monotonically increase until ˜[Nb5+]O and then decrease. However, from the Raman measurements, the peak intensities gradually decrease with an increase in [Nb5+] to reveal the binding mechanism and binding sites of metal ions in the SDNA molecules. From the PL, we observe the emission intensities to reduce them at up to ˜[Nb5+]O and then increase after that, expecting the energy transfer between the Nb5+ and SDNA molecules. The current-voltage measurement shows a significant increase in the current observed as [Nb5+] increases in the SDNA thin films when compared to that of pristine SDNA thin films. Finally, we investigate the temperature dependent magnetization in which the Nb5+-doped SDNA thin films reveal weak ferromagnetism due to the existence of tiny magnetic dipoles in the Nb5+-doped SDNA

Ultrafast gated imaging of laser produced plasmas using the optical Kerr effect

International Nuclear Information System (INIS)

Symes, D. R.; Wegner, U.; Ahlswede, H.-C.; Streeter, M. J. V.; Gallegos, P. L.; Divall, E. J.; Rajeev, P. P.; Neely, D.; Smith, R. A.

2010-01-01

Optical imaging is a versatile diagnostic for investigations of plasmas generated under intense laser irradiation. Electro-optic gating techniques operating on the >100 ps timescale are commonly used to reduce the amount of light detected from self-emission of hot plasma or improve the temporal resolution of the detector. The use of an optical Kerr gate enables a superior dynamic range and temporal resolution compared to electronically gated devices. The application of this method for enhanced imaging of laser produced plasmas with gate time ∼100 fs is demonstrated, and the possibility to produce a sub-10 fs, high dynamic range 'all optical' streak camera is discussed.

Ultra-thin silicon/electro-optic polymer hybrid waveguide modulators

Energy Technology Data Exchange (ETDEWEB)

Qiu, Feng; Spring, Andrew M. [Institute for Materials Chemistry and Engineering, Kyushu University, 6-1 Kasuga-koen Kasuga, Fukuoka 816-8580 (Japan); Sato, Hiromu [Department of Molecular and Material Sciences, Kyushu University, 6-1 Kasuga-koen Kasuga, Fukuoka 816-8580 (Japan); Maeda, Daisuke; Ozawa, Masa-aki; Odoi, Keisuke [Nissan Chemical Industries, Ltd., 2-10-1 Tuboi Nishi, Funabashi, Chiba 274-8507 (Japan); Aoki, Isao; Otomo, Akira [National Institute of Information and Communications Technology, 588-2 Iwaoka, Nishi-ku, Kobe 651-2492 (Japan); Yokoyama, Shiyoshi, E-mail: s-yokoyama@cm.kyushu-u.ac.jp [Institute for Materials Chemistry and Engineering, Kyushu University, 6-1 Kasuga-koen Kasuga, Fukuoka 816-8580 (Japan); Department of Molecular and Material Sciences, Kyushu University, 6-1 Kasuga-koen Kasuga, Fukuoka 816-8580 (Japan)

2015-09-21

Ultra-thin silicon and electro-optic (EO) polymer hybrid waveguide modulators have been designed and fabricated. The waveguide consists of a silicon core with a thickness of 30 nm and a width of 2 μm. The cladding is an EO polymer. Optical mode calculation reveals that 55% of the optical field around the silicon extends into the EO polymer in the TE mode. A Mach-Zehnder interferometer (MZI) modulator was prepared using common coplanar electrodes. The measured half-wave voltage of the MZI with 7 μm spacing and 1.3 cm long electrodes is 4.6 V at 1550 nm. The evaluated EO coefficient is 70 pm/V, which is comparable to that of the bulk EO polymer film. Using ultra-thin silicon is beneficial in order to reduce the side-wall scattering loss, yielding a propagation loss of 4.0 dB/cm. We also investigated a mode converter which couples light from the hybrid EO waveguide into a strip silicon waveguide. The calculation indicates that the coupling loss between these two devices is small enough to exploit the potential fusion of a hybrid EO polymer modulator together with a silicon micro-photonics device.

Titanium dioxide (TIO2) thin film and plasma properties in RF magnetron sputtering

International Nuclear Information System (INIS)

Ali, Riyaz Ahmad Mohamed; Nayan, Nafarizal

2013-01-01

Lately, titanium dioxide (TiO 2 ) films with anatase crystalline property received numerous attentions as unique material properties. There are wide applications of TiO 2 thin film such as for photocatalytic application in solar cell. In the present study, radio frequency (RF) magnetron sputtering technique has been used to produce high dense, homogeneously controllable film layer at low deposition temperature using titanium (Ti) target. The diameter of the Ti target is 3 inch with fixed discharge power of 400W. Magnetron sputtering plasma has been produced in high purity 99.99% Argon (Ar) and 99.99% Oxygen (O 2 ) environment pressure ranging from 5 to 20 mTorr. The TiO2 were growth on silicon and glass substrates. Substrate temperature during deposition was kept constant at 400°C. The distance between target and substrate holder was maintain at 14 cm with rotation of 10 rotation-per-minutes. Our X-ray diffraction result, shows anatase crystalline successfully formed with characterization peaks of plane (101) at 2θ = 25.28°, plane (202) at 2θ = 48.05° and plane (211) at 2θ = 55.06°. In addition, it is our interest to study the plasma properties and optical spectrum of Ti, Ti+ , O- , ArM and Ar+ in the chamber during the deposition process. Result of emission line intensities, electron density and temperature from optical spectroscope and Langmuir probe will be discuss further during the workshop. This works were supported by Graduate Incentive Scheme of Universiti Tun Hussein Onn Malaysia (UTHM) and Fundamental Research Grant Scheme of Ministry of Higher Education, Malaysia. (author)

Optical properties of WO3 thin films using surface plasmon resonance technique

International Nuclear Information System (INIS)

Paliwal, Ayushi; Sharma, Anjali; Gupta, Vinay; Tomar, Monika

2014-01-01

Indigenously assembled surface plasmon resonance (SPR) technique has been exploited to study the thickness dependent dielectric properties of WO 3 thin films. WO 3 thin films (80 nm to 200 nm) have been deposited onto gold (Au) coated glass prism by sputtering technique. The structural, optical properties and surface morphology of the deposited WO 3 thin films were studied using X-ray diffraction, UV-visible spectrophotometer, Raman spectroscopy, and Scanning electron microscopy (SEM). XRD analysis shows that all the deposited WO 3 thin films are exhibiting preferred (020) orientation and Raman data indicates that the films possess single phase monoclinic structure. SEM images reveal the variation in grain size with increase in thickness. The SPR reflectance curves of the WO 3 /Au/prism structure were utilized to estimate the dielectric properties of WO 3 thin films at optical frequency (λ = 633 nm). As the thickness of WO 3 thin film increases from 80 nm to 200 nm, the dielectric constant is seen to be decreasing from 5.76 to 3.42, while the dielectric loss reduces from 0.098 to 0.01. The estimated value of refractive index of WO 3 film is in agreement to that obtained from UV-visible spectroscopy studies. The strong dispersion in refractive index is observed with wavelength of incident laser light

Optical characterisation of sputtered hydrogenated amorphous silicon thin films

International Nuclear Information System (INIS)

Mellassi, K.; Chafik El Idrissi, M.; Chouiyakh, A.; Rjeb, A.; Barhdadi, A.

2000-09-01

The present work is devoted to the study of some optical properties of hydrogenated amorphous silicon (a-Si:H) thin films prepared by radio-frequency cathodic sputtering technique. It is essentially focused on investigating separately the effects of increasing partial hydrogen pressure during the deposition stage, and the effects of post deposition thermal annealing on the main optical parameters of the deposited layers (refraction index, optical gap Urbach energy, etc.). We show that low hydrogen pressures allow a saturation of the dangling bonds in the material, while high pressures lead to the creation of new defects. We also show that thermal annealing under moderate temperatures allows a good improvement of the structural quality of deposited films. (author)

Electrical resistivity change in Al:ZnO thin films dynamically deposited by bipolar pulsed direct-current sputtering and a remote plasma source

International Nuclear Information System (INIS)

Yang, Wonkyun; Joo, Junghoon

2010-01-01

The Al-doped ZnO (AZO) thin films for a transparent conducting oxide in solar cell devices were deposited by bipolar pulsed dc magnetron sputtering. This work was performed in an in-line type system and investigated AZO films in a static deposition mode and dynamic one, which is more important in the practical fields. Because of this dynamic deposition process, the zigzagged columnar structure was observed. This resulted in the decreasing electrical property, optical properties, and surface roughness. As a deposition in the dynamic mode, the resistivity increased from 1.64x10 -3 to 2.50x10 -3 Ω cm, as compared to that in the static mode, and the transmittance also decreased from 83.9% to 78.3%. To recover the disadvantage, a remote plasma source (RPS) was supported between the substrate and target for reducing zigzagged formation during the deposition. The deposition rate decreased by using RPS, but the electrical and optical properties of films got better than only dynamic mode. The resistivity and transmittance in the dynamic mode using RPS were 2.1x10 -3 Ω cm and 85.5%, respectively. In this study, the authors found the possibility to advance the electrical and optical properties of AZO thin films in the industry mode.

Synthesis, microstructural, optical and mechanical properties of yttria stabilized zirconia thin films

International Nuclear Information System (INIS)

Amézaga-Madrid, P.; Hurtado-Macías, A.; Antúnez-Flores, W.; Estrada-Ortiz, F.; Pizá-Ruiz, P.; Miki-Yoshida, M.

2012-01-01

Highlights: ► Thin films of YSZ obtained by AACVD have high quality. ► They are uniform, very transparent, and have high hardness. ► Optical characterization were performed in detail, optical constants and band gap energy were determined as a function of dopant content. - Abstract: Thin films of yttria-stabilized zirconia (YSZ) exhibit exceptional properties, such as high thermal, chemical and mechanical stability. Here, we report the synthesis of YSZ thin films by aerosol assisted chemical vapour deposition onto borosilicate glass and fused silica substrates. Optimum deposition temperature was 673 ± 5 K. In addition, different Y content was tried to analyse its influence in the microstructure and properties of the films. The films were uniform, transparent and non-light scattering. Surface morphology and cross sectional microstructure were studied by field emission scanning electron microscopy. The microstructure of the films was characterized by grazing incidence X-ray diffraction. Crystallite size and lattice parameter were obtained. Optical properties were analysed from reflectance and transmittance spectra; from these measurements, optical constants and band gap were obtained. Quantum confinement effect, due to the small grain size of the films, was evident in the high band gap energy obtained. Nanoindentation tests were realized at room temperature employing the continuous stiffness measurement method, to determine the hardness and elastic modulus as a function of Y content.

Structural and optical properties of Sb65Se35-xGex thin films

Science.gov (United States)

Saleh, S. A.; Al-Hajry, A.; Ali, H. M.

2011-07-01

Sb65Se35-xGex (x=0-20 at.%) thin films, prepared by the electron beam evaporation technique on ultrasonically cleaned glass substrates at 300 K, were investigated. The amorphous structure of the thin films was confirmed by x-ray diffraction analysis. The structure was deduced from the Raman spectra measured for all germanium contents in the Sb-Se-Ge matrix. The absorption coefficient (α) of the films was determined by optical transmission measurements. The compositional dependence of the optical band gap is discussed in light of topological and chemical ordered network models.

Changes in optical properties of polystyrene thin films by proton beam irradiation

Energy Technology Data Exchange (ETDEWEB)

Hwang, Sung Hyun; Jung, Jin Mook; Choi, Jae Hak [Dept. of of Polymer Science and Engineering, Chungnam National University, Daejeon (Korea, Republic of); Jung, Chan Hee; Hwang, In Tae; Shin, Jun Hwa [Research Division for Industry and Environment, Advanced Radiation Technology Institute, Korea Atomic Energy Research Institute, Jeongeup(Korea, Republic of)

2017-06-15

In this study, changes in optical properties of polystyrene (PS) thin films by proton irradiation were investigated. PS thin films were irradiated with 150 keV proton ions at fluences ranging from 1 × 10{sup 15} to 1 × 10{sup 16} ions cm{sup -2}. The chemical structures and optical properties of proton beam-irradiated PS thin films were investigated by using a FT-IR spectrometer, an UVvis spectrophotometer, a photoluminescence (PL) and a fluorescence microscope. The results of the chemical structure analysis revealed that chemical functional groups, such as OH, C=O, and C=C, were formed in the PS films due to the oxidation and formation of carbon clusters by proton beam irradiation. The PL emission was generated and gradually red-shifted with an increasing fluence due to the higher formation of sp2 carbon clusters by proton beam irradiation. The highest PL intensity was obtained at a fluence of 5×10{sup 15} ions cm{sup -2}. The optical band gap of PS calculated by using a Tauc’s plot decreased with increasing the fluence due to the formation of sp2 carbon clusters by proton beam irradiation.

Surface Passivation of Silicon Using HfO2 Thin Films Deposited by Remote Plasma Atomic Layer Deposition System.

Science.gov (United States)

Zhang, Xiao-Ying; Hsu, Chia-Hsun; Lien, Shui-Yang; Chen, Song-Yan; Huang, Wei; Yang, Chih-Hsiang; Kung, Chung-Yuan; Zhu, Wen-Zhang; Xiong, Fei-Bing; Meng, Xian-Guo

2017-12-01

Hafnium oxide (HfO 2 ) thin films have attracted much attention owing to their usefulness in equivalent oxide thickness scaling in microelectronics, which arises from their high dielectric constant and thermodynamic stability with silicon. However, the surface passivation properties of such films, particularly on crystalline silicon (c-Si), have rarely been reported upon. In this study, the HfO 2 thin films were deposited on c-Si substrates with and without oxygen plasma pretreatments, using a remote plasma atomic layer deposition system. Post-annealing was performed using a rapid thermal processing system at different temperatures in N 2 ambient for 10 min. The effects of oxygen plasma pretreatment and post-annealing on the properties of the HfO 2 thin films were investigated. They indicate that the in situ remote plasma pretreatment of Si substrate can result in the formation of better SiO 2 , resulting in a better chemical passivation. The deposited HfO 2 thin films with oxygen plasma pretreatment and post-annealing at 500 °C for 10 min were effective in improving the lifetime of c-Si (original lifetime of 1 μs) to up to 67 μs.

Structural and optical investigation of Te-based chalcogenide thin films

Energy Technology Data Exchange (ETDEWEB)

Sharma, Rita, E-mail: reetasharma2012@gmail.com; Sharma, Shaveta; Thangaraj, R.; Mian, M. [Semiconductors Laboratory, Department of Physics, GND University, Amritsar (India); Chander, Ravi [Applied Science Deptt. Govt. Polytechnic College Amritsar (India); Kumar, Praveen [Department of Physics, DAV University, Sarmastipur, Jalandhar-144012 (India)

2015-05-15

We report the structural and optical properties of thermally evaporated Bi{sub 2}Te{sub 3}, In{sub 2}Te{sub 3} and InBiTe{sub 3} films by using X-ray diffraction, optical and Raman Spectroscopy techniques. The as-prepared thin films were found to be Semi-crystalline by X-ray diffraction. Particle Size and Strain has been calculated from XRD data. The optical constants, film thickness, refractive index and optical band gap (E{sub g}) has been reported for In{sub 2}Te{sub 3}, InBiTe{sub 3} films. Raman Spectroscopy was performed to investigate the effect of Bi, In, on lattice vibration and chemical bonding in Te based chalcogenide glassy alloys.

Structural, microstructural and optical properties of Cu2ZnSnS4 thin ...

Indian Academy of Sciences (India)

2017-08-05

Aug 5, 2017 ... From optical absorption studies, the direct optical band gap of CZTS films is found to be ∼1.45 eV. ... CZTS thin films; thermal evaporation; annealing; Raman spectroscopy; .... determination of composition data is ±5 at%.

Multi-Directional Optical Diagnostics of Thermal Plasma Jets

Czech Academy of Sciences Publication Activity Database

Hlína, Jan; Chvála, František; Šonský, Jiří; Gruber, Jan

2008-01-01

Roč. 19, č. 1 (2008), s. 1-6 ISSN 0957-0233 R&D Projects: GA ČR(CZ) GA202/05/0728 Institutional research plan: CEZ:AV0Z20570509 Keywords : thermal plasma jet * optical diagnostics * Radon transform Subject RIV: BL - Plasma and Gas Discharge Physics Impact factor: 1.493, year: 2008

Tailoring and optimization of optical properties of CdO thin films for gas sensing applications

Science.gov (United States)

Rajput, Jeevitesh K.; Pathak, Trilok K.; Kumar, V.; Swart, H. C.; Purohit, L. P.

2018-04-01

Cadmium oxide (CdO) thin films have been deposited onto glass substrates using different molar concentrations (0.2 M, 0.5 M and 0.8 M) of cadmium acetate precursor solutions using a sol-gel spin coating technique. The structural, morphological, optical and electrical results are presented. X-ray diffraction patterns indicated that the CdO films of different molarity have a stable cubic structure with a (111) preferred orientation at low molar concentration. Scanning electron microscopy images revealed that the films adopted a rectangular to cauliflower like morphology. The optical transmittance of the thin films was observed in the range 200-800 nm and it was found that the 0.2 M CdO thin films showed about 83% transmission in the visible region. The optical band gap energy of the thin films was found to vary from 2.10 to 3.30 eV with the increase in molar concentration of the solution. The electrical resistance of the 0.5 M thin film was found to be 1.56 kΩ. The oxygen sensing response was observed between 20-33% in the low temperature range (32-200 °C).

A study on linear and non-linear optical constants of Rhodamine B thin film deposited on FTO glass

Science.gov (United States)

Yahia, I. S.; Jilani, Asim; Abutalib, M. M.; AlFaify, S.; Shkir, M.; Abdel-wahab, M. Sh.; Al-Ghamdi, Attieh A.; El-Naggar, A. M.

2016-06-01

The aim of this research was to fabricate/deposit the good quality thin film of Rhodamine B dye on fluorine doped tin oxide glass substrate by the low cost spin coating technique and study their linear and nonlinear optical parameters. The thickness of the thin film was measured about 300 nm with alpha step system. The transmittance of the fabricated thin film was found to be above 75% corresponding to the fluorine doped tin oxide layer. The structural analysis was performed with X-rays diffraction spectroscopy. Atomic force microscope showed the topographic image of deposited thin film. Linear optical constant like absorption coefficient, band gap, and extinction index was calculated. The dielectric constant was calculated to know the optical response of Rhodamine B dye over fluorine doped tin oxide substrate. The nonlinear optical constant like linear optical susceptibility χ(1), nonlinear optical susceptibility χ(3), nonlinear refractive index (n2) were calculated by spectroscopic method. This method has advantage over the experimental method like Z-Scan for organic dye base semiconductors for future advance optoelectronics applications like dye synthesis solar cell.

Optical properties of CeO 2 thin films

Indian Academy of Sciences (India)

Cerium oxide (CeO2) thin films have been prepared by electron beam evaporation technique onto glass substrate at a pressure of about 6 × 10-6 Torr. The thickness of CeO2 films ranges from 140–180 nm. The optical properties of cerium oxide films are studied in the wavelength range of 200–850 nm. The film is highly ...

Photoelectrochemical behavior of Al{sub x}In{sub 1−x}N thin films grown by plasma-assisted dual source reactive evaporation

Energy Technology Data Exchange (ETDEWEB)

Alizadeh, M., E-mail: alizadeh_kozerash@yahoo.com; Ganesh, V.; Pandikumar, A.; Goh, B.T.; Azianty, S.; Huang, N.M.; Rahman, S.A., E-mail: saadah@um.edu.my

2016-06-15

In this work the dependence of photoelectrochemical (PEC) behavior of Al{sub x}In{sub 1−x}N (0.48 ≤x ≤ 0.66) thin films grown by plasma-assisted dual source reactive evaporation, on the plasma dynamics and the alloys properties was studied. The influence of nitrogen flow rate on the compositional, morphological, structural and optical properties of the as-prepared films were investigated using X-ray photoelectron spectroscopy (XPS), Field emission scanning electron microscopy (FESEM), micro Raman spectroscopy and UV–vis spectroscopy. The PEC study of the as-grown Al{sub x}In{sub 1−x}N thin films targeted for water splitting application were performed in the presence of simulated solar irradiation of AM 1.5G (100 mW/cm{sup 2}). The PEC results revealed that the photocurrent for the Al{sub x}In{sub 1−x}N thin film grown at nitrogen flow rate of 80 sccm is ∼10-fold higher than the dark current. From the Mott–Schottky (MS) plots it was deduced that by increasing N{sub 2} flow rate up to 80 sccm, the flat band potential shifts toward more negative values. The good photoelectrochemical behavior of Al{sub x}In{sub 1−x}N thin films showed that this material could be a potential candidate for PEC water splitting. - Highlights: • Al{sub x}In{sub 1−x}N films were grown by Plasma-aided dual source reactive evaporation. • Effect of nitrogen flow rate on the films properties was investigated. • The band gap of the films decreased from 2.33 to 1.92 eV. • A good photoelectrochemical behavior of the Al{sub x}In{sub 1−x}N thin films was shown. • The photocurrent for the Al{sub 0.55}In{sub 0.45}N films is ∼10-fold higher than dark current.

Modulation of ionization in the plasma column of an optical discharge

International Nuclear Information System (INIS)

Nastoyashchii, A.F.

1981-01-01

Stability of the ionization in the plasma column of an optical discharge is discussed. It is shown that a plasma filament formed by a long laser spike under optical discharge conditions may break up into a chain of bright luminous layers oriented in the direction of propagation of a laser beam and characterized by a higher gas ionization (''optical striations''). A nonlinear formulation of the problem is used to find the depth of modulation of the gas ionization

Structural, optical and nonlinear optical studies of AZO thin film prepared by SILAR method for electro-optic applications

Science.gov (United States)

Edison, D. Joseph; Nirmala, W.; Kumar, K. Deva Arun; Valanarasu, S.; Ganesh, V.; Shkir, Mohd.; AlFaify, S.

2017-10-01

Aluminium doped (i.e. 3 at%) zinc oxide (AZO) thin films were prepared by simple successive ionic layer adsorption and reaction (SILAR) method with different dipping cycles. The structural and surface morphology of AZO thin films were studied by using X-ray diffraction (XRD) and scanning electron microscopy (SEM). The optical parameters such as, transmittance, band gap, refractive index, extinction coefficient, dielectric constant and nonlinear optical properties of AZO films were investigated. XRD pattern revealed the formation of hexagonal phase ZnO and the intensity of the film was found to increase with increasing dipping cycle. The crystallite size was found to be in the range of 29-37 nm. Scanning Electron Microscope (SEM) images show the presence of small sized grains, revealing that the smoothest surface was obtained at all the films. The EDAX spectrum of AZO conforms the presence of Zn, O and Al. The optical transmittance in the visible region is high 87% and the band gap value is 3.23 eV. The optical transmittance is decreased with respect to dipping cycles. The room temperature PL studies revealed that the AZO films prepared at (30 cycles) has good film quality with lesser defect density. The third order nonlinear optical parameters were also studied using Z-scan technique to know the applications of deposited films in nonlinear devices. The third order nonlinear susceptibility value is found to be 1.69 × 10-7, 3.34 × 10-8, 1.33 × 10-7and 2.52 × 10-7 for AZO films deposited after 15, 20, 25 and 30 dipping cycles.

The physics of thin film optical spectra an introduction

CERN Document Server

Stenzel, Olaf

2016-01-01

The book bridges the gap between fundamental physics courses (such as optics, electrodynamics, quantum mechanics and solid state physics) and highly specialized literature on the spectroscopy, design, and application of optical thin film coatings. Basic knowledge from the above-mentioned courses is therefore presumed. Starting from fundamental physics, the book enables the reader derive the theory of optical coatings and to apply it to practically important spectroscopic problems. Both classical and semiclassical approaches are included. Examples describe the full range of classical optical coatings in various spectral regions as well as highly specialized new topics such as rugate filters and resonant grating waveguide structures.The second edition has been updated and extended with respect to probing matter in different spectral regions, homogenous and inhomogeneous line broadening mechanisms and the Fresnel formula for the effect of planar interfaces.

Studies on the Optical Properties and Surface Morphology of Cobalt Phthalocyanine Thin Films

Directory of Open Access Journals (Sweden)

Benny Joseph

2008-01-01

Full Text Available Thin films of Cobalt Phthalocyanine (CoPc are fabricated at a base pressure of 10-5 m.bar using Hind-Hivac thermal evaporation plant. The films are deposited on to glass substrates at various temperatures 318, 363, 408 and 458K. The optical absorption spectra of these thin films are measured. The present studies reveal that the optical band gap energies of CoPc thin films are almost same on substrate temperature variation. The structure and surface morphology of the films deposited on glass substrates of temperatures 303, 363 and 458K are studied using X-ray diffractograms and Scanning Electron Micrographs (SEM, which show that there is a change in the crystallinity and surface morphology due to change in the substrate temperatures. Full width at half maximum (FWHM intensity of the diffraction peaks is also found reduced with increasing substrate temperatures. Scanning electron micrographs show that these crystals are needle like, which are interconnected at high substrate temperatures. The optical band gap energy is almost same on substrate temperature variation. Trap energy levels are also observed for these films.

Updated Collisional Ionization Equilibrium Calculated for Optically Thin Plasmas

Science.gov (United States)

Savin, Daniel Wolf; Bryans, P.; Badnell, N. R.; Gorczyca, T. W.; Laming, J. M.; Mitthumsiri, W.

2010-03-01

Reliably interpreting spectra from electron-ionized cosmic plasmas requires accurate ionization balance calculations for the plasma in question. However, much of the atomic data needed for these calculations have not been generated using modern theoretical methods and their reliability are often highly suspect. We have carried out state-of-the-art calculations of dielectronic recombination (DR) rate coefficients for the hydrogenic through Na-like ions of all elements from He to Zn as well as for Al-like to Ar-like ions of Fe. We have also carried out state-of-the-art radiative recombination (RR) rate coefficient calculations for the bare through Na-like ions of all elements from H to Zn. Using our data and the recommended electron impact ionization data of Dere (2007), we present improved collisional ionization equilibrium calculations (Bryans et al. 2006, 2009). We compare our calculated fractional ionic abundances using these data with those presented by Mazzotta et al. (1998) for all elements from H to Ni. This work is supported in part by the NASA APRA and SHP SR&T programs.

The influence of monomer concentration on the optical properties of electrochemically synthesized polypyrrole thin films

International Nuclear Information System (INIS)

Thombare, J. V.; Fulari, V. J.; Rath, M. C.; Han, S. H.

2013-01-01

Polypyrrole (PPy) thin films were deposited on stainless steel and ITO coated glass substrate at a constant deposition potential of 0.8 V versus saturated calomel electrode (SCE) by using the electrochemical polymerization method. The PPy thin films were deposited at room temperature at various monomer concentrations ranging from 0.1 M to 0.3 M pyrrole. The structural and optical properties of the polypyrrole thin films were investigated using an X-ray diffractometer (XRD), FTIR spectroscopy, scanning electron microscopy (SEM), and ultraviolet—visible (UV—vis) spectroscopy. The XRD results show that polypyrrole thin films have a semi crystalline structure. Higher monomer concentration results in a slight increase of crystallinity. The polypyrrole thin films deposited at higher monomer concentration exhibit high visible absorbance. The refractive indexes of the polypyrrole thin films are found to be in the range of 1 to 1.3 and vary with monomer concentration as well as wavelength. The extinction coefficient decreases slightly with monomer concentration. The electrochemically synthesized polypyrrole thin film shows optical band gap energy of 2.14 eV. (semiconductor materials)

Structural and optical properties of ZnO–SnO{sub 2} mixed thin films deposited by spray pyrolysis

Energy Technology Data Exchange (ETDEWEB)

Tharsika, T., E-mail: tharsika@siswa.um.edu.my; Haseeb, A.S.M.A., E-mail: haseeb@um.edu.my; Sabri, M.F.M., E-mail: faizul@um.edu.my

2014-05-02

Nanocrystalline ZnO–SnO{sub 2} mixed thin films were deposited by the spray pyrolysis technique at various substrate temperatures during deposition. The mixed films were prepared in the range of 20.9 at.% to 73.4 at.% by altering the Zn/(Sn + Zn) atomic ratio in the starting solution. Morphology, crystal structures, and optical properties of the films were characterized by field-emission scanning electron microscopy (FESEM), X-ray diffraction (XRD), and ultraviolet–visible and photoluminescence (PL) spectroscopy. XRD analysis reveals that the crystallinity of the Sn-rich mixed thin films increases with increasing substrate temperatures. FESEM images show that the grain size of mixed thin films is smaller compared to that of pure ZnO and SnO{sub 2} thin films. A drop in the thickness and optical bandgap of the film was observed for films fabricated at high temperatures, which coincided with the increased crystallinity of the films. The average optical transmission of mixed thin films increased from 70% to 95% within the visible range (400–800 nm) as the substrate temperature increases. Optical bandgap of the films was determined to be in the range of 3.21–3.96 eV. The blue shift in the PL spectra from the films was supported by the fact that grain size of the mixed thin films is much smaller than that of the pure ZnO and SnO{sub 2} thin films. Due to the improved transmission and reduced grain size, the ZnO–SnO{sub 2} mixed thin films can have potential use in photovoltaic and gas sensing applications. - Highlights: • ZnO–SnO{sub 2} mixed thin films were deposited on glass substrate by spray pyrolysis. • Crystallinity of the thin films increases with substrate temperature. • Grain size of the mixed thin films is smaller than that of the pure thin films. • Reduction of grain size depends on mixed atomic ratios of precursor solution. • Optical band gap of films could be engineered by changing substrate temperature.

Optical and electrical properties of boron doped diamond thin conductive films deposited on fused silica glass substrates

Energy Technology Data Exchange (ETDEWEB)

Ficek, M.; Sobaszek, M.; Gnyba, M. [Department of Metrology and Optoelectronics, Gdansk University of Technology, 11/12G. Narutowicza St., 80-233 Gdansk (Poland); Ryl, J. [Department of Electrochemistry, Corrosion and Material Engineering, Gdansk University of Technology, 11/12 Narutowicza St., 80-233 Gdansk (Poland); Gołuński, Ł. [Department of Metrology and Optoelectronics, Gdansk University of Technology, 11/12G. Narutowicza St., 80-233 Gdansk (Poland); Smietana, M.; Jasiński, J. [Institute of Microelectronics and Optoelectronics, Warsaw University of Technology, 75 Koszykowa St., 00-662 Warsaw (Poland); Caban, P. [Institute of Electronic Materials Technology, 133 Wolczynska St., 01-919 Warsaw (Poland); Bogdanowicz, R., E-mail: rbogdan@eti.pg.gda.pl [Department of Metrology and Optoelectronics, Gdansk University of Technology, 11/12G. Narutowicza St., 80-233 Gdansk (Poland); Materials and Process Simulation Center, California Institute of Technology, Pasadena, CA 91125 (United States)

2016-11-30

Highlights: • Growth of 60% of transmittance diamond films with resistivity as low as 48 Ω cm. • Two step seeding process of fused silica: plasma hydrogenation and wet seeding. • Nanodiamond seeding density of 2 × 10{sup 10} cm{sup −2} at fused silica substrates. • High refractive index (2.4 @550 nm) was achieved for BDD films deposited at 500 °C. - Abstract: This paper presents boron-doped diamond (BDD) film as a conductive coating for optical and electronic purposes. Seeding and growth processes of thin diamond films on fused silica have been investigated. Growth processes of thin diamond films on fused silica were investigated at various boron doping level and methane admixture. Two step pre-treatment procedure of fused silica substrate was applied to achieve high seeding density. First, the substrates undergo the hydrogen plasma treatment then spin-coating seeding using a dispersion consisting of detonation nanodiamond in dimethyl sulfoxide with polyvinyl alcohol was applied. Such an approach results in seeding density of 2 × 10{sup 10} cm{sup −2}. The scanning electron microscopy images showed homogenous, continuous and polycrystalline surface morphology with minimal grain size of 200 nm for highly boron doped films. The sp{sup 3}/sp{sup 2} ratio was calculated using Raman spectra deconvolution method. A high refractive index (range of 2.0–2.4 @550 nm) was achieved for BDD films deposited at 500 °C. The values of extinction coefficient were below 0.1 at λ = 550 nm, indicating low absorption of the film. The fabricated BDD thin films displayed resistivity below 48 Ohm cm and transmittance over 60% in the visible wavelength range.

Optical conductivity of topological insulator thin films

International Nuclear Information System (INIS)

Li, L. L.; Xu, W.; Peeters, F. M.

2015-01-01

We present a detailed theoretical study on the optoelectronic properties of topological insulator thin film (TITFs). The k·p approach is employed to calculate the energy spectra and wave functions for both the bulk and surface states in the TITF. With these obtained results, the optical conductivities induced by different electronic transitions among the bulk and surface states are evaluated using the energy-balance equation derived from the Boltzmann equation. We find that for Bi 2 Se 3 -based TITFs, three characteristic regimes for the optical absorption can be observed. (i) In the low radiation frequency regime (photon energy ℏω<200 meV), the free-carrier absorption takes place due to intraband electronic transitions. An optical absorption window can be observed. (ii) In the intermediate radiation frequency regime (200<ℏω<300 meV), the optical absorption is induced mainly by interband electronic transitions from surface states in the valance band to surface states in the conduction band and an universal value σ 0 =e 2 /(8ℏ) for the optical conductivity can be obtained. (iii) In the high radiation frequency regime (ℏω>300 meV), the optical absorption can be achieved via interband electronic transitions from bulk and surface states in the valance band to bulk and surface states in the conduction band. A strong absorption peak can be observed. These interesting findings indicate that optical measurements can be applied to identify the energy regimes of bulk and surface states in the TITF

Theoretical investigation of electronic, magnetic and optical properties of Fe doped GaN thin films

International Nuclear Information System (INIS)

Salmani, E.; Mounkachi, O.; Ez-Zahraouy, H.; Benyoussef, A.; Hamedoun, M.; Hlil, E.K.

2013-01-01

Highlights: •Magnetic and optical properties Fe-doped GaN thin films are studied using DFT. •The band gaps of GaN thin films are larger than the one of the bulk. •The layer thickness and acceptor defect can switch the magnetic ordering. -- Abstract: Using first principles calculations based on spin-polarized density functional theory, the magnetic and optical properties of GaN and Fe-doped GaN thin films with and without acceptor defect is studied. The band structure calculations show that the band gaps of GaN thin films with 2, 4 and 6 layers are larger than the one of the bulk with wurtzite structure and decreases with increasing the film thickness. In Fe doped GaN thin films, we show that layer of thickness and acceptor defect can switch the magnetic ordering from disorder local moment (DLM) to ferromagnetic (FM) order. Without acceptor defect Fe doped GaN exhibits spin glass phase in 4 layers form and ferromagnetic state for 2 layers form of the thin films, while it exhibits ferromagnetic phase with acceptor defect such as vacancies defect for 2 and 4 layers. In the FM ordering, the thin films is half-metallic and is therefore ideal for spin application. The different energy between ferromagnetic state and disorder local moment state was evaluated. Moreover, the optical absorption spectra obtained by ab initio calculations confirm the ferromagnetic stability based on the charge state of magnetic impurities

Optical and electrical properties of transparent conductive ITO thin films under proton radiation with 100 keV

International Nuclear Information System (INIS)

Wei, Q.; He, S.Y.; Yang, D.Z.; Liu, J.C.

2005-01-01

Under the simulation environment for the vacuum and heat sink in space, the changes in optical and electrical properties of transparent conductive indium tin oxide (ITO) thin films induced by radiation of protons with 100 keV were studied. The ITO thin films were deposited on JGS1 quartz substrate by a sol-gel method. The sheet resistance and transmittance spectra of the ITO thin films were measured using the four-point probe method and a spectrophotometer, respectively. The surface morphology was analyzed by AFM. The experimental results showed that the electrical and optical performances of the ITO thin films were closely related to the irradiation fluence. When the fluence exceeded a given value 2 x 10 16 cm -2 , the sheet resistance increased obviously and the optical transmittance decreased. The AFM analysis indicated that the grain size of the ITO thin films diminished. The studies about the radiation effect on ITO thin films will help to predict performance evolution of the second surface mirrors on satellites under space radiation environment. (orig.)

Investigation of HF-plasma-treated soft x-ray optical elements

Science.gov (United States)

Eggenstein, F.; Krivenkov, M.; Rudolph, I.; Sertsu, M. G.; Sokolov, A.; Varykhalov, A.; Wolf, J.; Zeschke, T.; Schäfers, F.

2017-09-01

The contamination of optical elements (mirrors and gratings) with carbon still is an issue when using soft x-ray synchrotron radiation. With an in-house developed HF-plasma treatment we are able to decontaminate our optics in-situ from carbon very efficiently. The cleaning device, a simple Al-antenna, is mounted in situ inside the mirror- and grating vacuum chambers. A systematic study of the HF-plasma cleaning efficiency was performed acquired with in-situ and exsitu methods for monitoring: An atomic force microscope (AFM) and a scanning tunneling microscope (STM) were used before and after the cleaning process to determine the surface morphology and roughness. Reflectivity angular scans using the reflectometer at the BESSY-II Metrology Station [1-3] allowed to estimate the thickness of the remaining Clayer after different cleaning steps and thereby helped us to determine the etching rate. Reflection spectra measurements in the range of 200 eV - 900 eV show the complete removal of Carbon from the optics without contaminating it with any other elements due to the plasma treatment. The data show that the plasma process improves the reflectivity and reduces the roughness of the surface. In addition to that, the region of the optical surface where the carbon has been removed becomes passivated.

Interaction of a charge with a thin plasma sheet

International Nuclear Information System (INIS)

Bordag, M.

2007-01-01

The interaction of the electromagnetic field with a two-dimensional plasma sheet intended to describe the pi-electrons of a carbon nanotube or a C 60 molecule is investigated. By first integrating out the displacement field of the plasma or the electromagnetic field, different representations for quantities like the Casimir energy are derived which are shown to be consistent with one another. Starting from the covariant gauge for the electromagnetic field, it is shown that the matching conditions to which the presence of the plasma sheet can be reduced are different from the commonly used ones. The difference in the treatments does not show up in the Casimir force between two parallel sheets, but it is present in the Casimir-Polder force between a charge or a neutral atom and a sheet. At once, since the plasma sheet is a regularization of the conductor boundary conditions, this sheds light on the difference in physics found earlier in the realization of conductor boundary conditions as 'thin' or 'thick' boundary conditions in Phys. Rev. D 70, 085010 (2004)

Third-order optical susceptibility in polythiophene thin films prepared by spin-coating from high-boiling-point solvents

International Nuclear Information System (INIS)

Kobayashi, Takashi; Shinke, Wataru; Nagase, Takashi; Murakami, Shuichi; Naito, Hiroyoshi

2014-01-01

We examined the enhancements in the third-order optical susceptibility (χ (3) ) of spin-coated thin films of poly(3-hexylthiophene) using an anhydrous solvent with a high boiling point. The χ (3) value was found to be enhanced as the boiling point of the solvent increased. In this study, the largest value of χ (3) was obtained for thin films that were spin-coated in an inert atmosphere using anhydrous dichlorobenzene and then was subsequently exposed to its vapor for 1 h. The maximum value of the imaginary part of χ (3) was determined to be 1.8 × 10 -9 esu, which is more than three times greater than that of thin films spin-coated in an ambient atmosphere using a solvent with a low boiling point, such as chloroform. - Highlights: • Enhancements in nonlinear optical properties of a conjugated polymer were examined. • Thin films were fabricated by spin-coating using a solvent with a high boiling point. • The third-order optical susceptibility increased with increasing boiling point. • An additional enhancement was obtained by the vapor-treatment technique. • These thin films were sufficiently homogeneous for use in nonlinear optical devices

Topography description of thin films by optical Fourier Transform

International Nuclear Information System (INIS)

Jaglarz, Janusz

2008-01-01

In this work, the main problems concerning the scattering of light by real surfaces and films are presented in view of results obtained with the bidirectional reflection distribution function (BRDF) method and optical profilometry (OP). The BRDF and OP studies, being complementary to the atomic force microscopy (AFM), allow one to get information about surface topography. From the optical data, the surface power spectral density (PSD) functions for absorbing and transparent rough films have been found. Both functions have been evaluated from the Fourier transform (FT) of the surface profiles. The usefulness of BRDF-and OP methods in characterization of real surfaces is demonstrated when analyzing the optical data obtained for metallic TiN-and organic PVK thin films deposited on various substrates

Topography description of thin films by optical Fourier Transform

Energy Technology Data Exchange (ETDEWEB)

Jaglarz, Janusz [Institute of Physics, Cracow University of Technology, ul. Podchoraz.ych 1, 30-084 Krakow (Poland)], E-mail: pujaglar@cyfronet.krakow.pl

2008-09-30

In this work, the main problems concerning the scattering of light by real surfaces and films are presented in view of results obtained with the bidirectional reflection distribution function (BRDF) method and optical profilometry (OP). The BRDF and OP studies, being complementary to the atomic force microscopy (AFM), allow one to get information about surface topography. From the optical data, the surface power spectral density (PSD) functions for absorbing and transparent rough films have been found. Both functions have been evaluated from the Fourier transform (FT) of the surface profiles. The usefulness of BRDF-and OP methods in characterization of real surfaces is demonstrated when analyzing the optical data obtained for metallic TiN-and organic PVK thin films deposited on various substrates.

Subtle Raman signals from nano-diamond and β-SiC thin films

International Nuclear Information System (INIS)

Kuntumalla, Mohan Kumar; Ojha, Harish; Srikanth, Vadali Venkata Satya Siva

2013-01-01

Micro Raman scattering experiments are carried out in pursuit of subtle but discernable signals from nano-diamond and β-SiC thin films. The thin films are synthesized using microwave plasma assisted chemical vapor deposition technique. Raman scattering experiments in conjunction with scanning electron microscopy and x-ray diffraction were carried out to extract microstructure and phase information of the above mentioned thin films. Certain subtle Raman signals have been identified in this work. In the case of nanodiamond thin films, Raman bands at ∼ 485 and ∼ 1220 cm −1 are identified. These bands have been assigned to the nanodiamond present in nanodiamond thin films. In the case of nano β-SiC thin films, optical phonons are identified using surface enhanced Raman scattering. - Highlights: ► Subtle Raman signals from nano-diamond and β-silicon carbide related thin films. ► Raman bands at ∼ 485 and ∼ 1220 cm −1 from nanodiamond thin films are identified. ► Longitudinal optical phonon from nano β-silicon carbide thin films is identified

Linear birefringence and optical ativity in a magnetized plasma

International Nuclear Information System (INIS)

Vuolo, J.H.; Galvao, R.M.O.

1982-02-01

Linear birefringence and optical activity are considered separately to electromagnetic wave propagation in magnetized cold plasma, using frequency approximation much bigger than plasma frequency. It's showen that in some interesting cases, those phenomena could be independents. Explicit expressions are obtained for refraction indices to linear birefringency and optical activity. The correspondents indices attenuation aRe obtained in first orden of attenuation. It's showen that the characteristic states for linear dichroism coincide with the characteristic states for linear birefringence. The characteristic states for elliptic dichroism are obtained. (M.A.F.) [pt

Investigation of plasma stream collision produced by thin films irradiated by powerful pulsed electron beam

International Nuclear Information System (INIS)

Efremov, V P; Demidov, B A; Ivkin, M V; Mescheryakov, A N; Petrov, V A; Potapenko, A I

2006-01-01

Collision of fast plasma streams in vacuum is investigated. Plasma streams were produced by irradiation of thin foils with a powerful pulsed electron beam. Interaction of the plasma flows was studied by using frame and streak cameras. One-dimensional numerical simulation was carried out. Application of this method for porous ICF targets and high-energy physics is discussed

Enhancement of absorption and color contrast in ultra-thin highly absorbing optical coatings

Science.gov (United States)

Kats, Mikhail A.; Byrnes, Steven J.; Blanchard, Romain; Kolle, Mathias; Genevet, Patrice; Aizenberg, Joanna; Capasso, Federico

2013-09-01

Recently a new class of optical interference coatings was introduced which comprises ultra-thin, highly absorbing dielectric layers on metal substrates. We show that these lossy coatings can be augmented by an additional transparent subwavelength layer. We fabricated a sample comprising a gold substrate, an ultra-thin film of germanium with a thickness gradient, and several alumina films. The experimental reflectivity spectra showed that the additional alumina layer increases the color range that can be obtained, in agreement with calculations. More generally, this transparent layer can be used to enhance optical absorption, protect against erosion, or as a transparent electrode for optoelectronic devices.

Optical characterisation of thin film cadmium oxide prepared by a ...

African Journals Online (AJOL)

The optical transmission spectra of transparent conducting cadmium oxide (CdO) thin films deposited by a modified reactive evaporation process onto glass substrates have been measured. The interference fringes were used to calculate the refractive index, thickness variation, average thickness and absorption coefficient ...

Radiation loss driven instabilities in laser heated plasmas

International Nuclear Information System (INIS)

Evans, R.G.

1985-01-01

Any plasma in which a significant part of the power balance is due to optically thin radiative losses may be subject to a radiation cooling instability. A simple analytical model gives the dispersion relation for the instability and inclusion of a realistic radiation loss term in a two dimensional hydrodynamic simulation shows that ''jet'' like features form in moderate to high Z plasmas

Thin films by metal-organic precursor plasma spray

International Nuclear Information System (INIS)

Schulz, Douglas L.; Sailer, Robert A.; Payne, Scott; Leach, James; Molz, Ronald J.

2009-01-01

While most plasma spray routes to coatings utilize solids as the precursor feedstock, metal-organic precursor plasma spray (MOPPS) is an area that the authors have investigated recently as a novel route to thin film materials. Very thin films are possible via MOPPS and the technology offers the possibility of forming graded structures by metering the liquid feed. The current work employs metal-organic compounds that are liquids at standard temperature-pressure conditions. In addition, these complexes contain chemical functionality that allows straightforward thermolytic transformation to targeted phases of interest. Toward that end, aluminum 3,5-heptanedionate (Al(hd) 3 ), triethylsilane (HSi(C 2 H 5 ) 3 or HSiEt 3 ), and titanium tetrakisdiethylamide (Ti(N(C 2 H 5 ) 2 ) 4 or Ti(NEt 2 ) 4 ) were employed as precursors to aluminum oxide, silicon carbide, and titanium nitride, respectively. In all instances, the liquids contain metal-heteroatom bonds envisioned to provide atomic concentrations of the appropriate reagents at the film growth surface, thus promoting phase formation (e.g., Si-C bond in triethylsilane, Ti-N bond in titanium amide, etc.). Films were deposited using a Sulzer Metco TriplexPro-200 plasma spray system under various experimental conditions using design of experiment principles. Film compositions were analyzed by glazing incidence x-ray diffraction and elemental determination by x-ray spectroscopy. MOPPS films from HSiEt 3 showed the formation of SiC phase but Al(hd) 3 -derived films were amorphous. The Ti(NEt 2 ) 4 precursor gave MOPPS films that appear to consist of nanosized splats of TiOCN with spheres of TiO 2 anatase. While all films in this study suffered from poor adhesion, it is anticipated that the use of heated substrates will aid in the formation of dense, adherent films.

Linear and nonlinear optical properties of Sb-doped GeSe2 thin films

Science.gov (United States)

Zhang, Zhen-Ying; Chen, Fen; Lu, Shun-Bin; Wang, Yong-Hui; Shen, Xiang; Dai, Shi-Xun; Nie, Qiu-Hua

2015-06-01

Sb-doped GeSe2 chalcogenide thin films are prepared by the magnetron co-sputtering method. The linear optical properties of as-deposited films are derived by analyzing transmission spectra. The refractive index rises and the optical band gap decreases from 2.08 eV to 1.41 eV with increasing the Sb content. X-ray photoelectron spectra further confirm the formation of a covalent Sb-Se bond. The third-order nonlinear optical properties of thin films are investigated under femtosecond laser excitation at 800 nm. The results show that the third-order nonlinear optical properties are enhanced with increasing the concentration of Sb. The nonlinear refraction indices of these thin films are measured to be on the order of 10-18 m2/W with a positive sign and the nonlinear absorption coefficients are obtained to be on the order of 10-10 m/W. These excellent properties indicate that Sb-doped Ge-Se films have a good prospect in the applications of nonlinear optical devices. Project supported by the National Key Basic Research Program of China (Grant No. 2012CB722703), the National Natural Science Foundation of China (Grant No. 61377061), the Young Leaders of Academic Climbing Project of the Education Department of Zhejiang Province, China (Grant No. pd2013092), the Program for Innovative Research Team of Ningbo City, China (Grant No. 2009B217), and the K. C. Wong Magna Fund in Ningbo University, China.

Physical and dispersive optical characteristics of ZrON/Si thin-film system

Energy Technology Data Exchange (ETDEWEB)

Wong, Yew Hoong [University of Malaya, Centre of Advanced Materials, Department of Mechanical Engineering, Faculty of Engineering, Kuala Lumpur (Malaysia); University of Malaya, Centre of Advanced Manufacturing and Material Processing, Kuala Lumpur (Malaysia); Atuchin, V.V. [Institute of Semiconductor Physics, SB RAS, Laboratory of Optical Materials and Structures, Novosibirsk (Russian Federation); Kruchinin, V.N. [Institute of Semiconductor Physics, SB RAS, Laboratory for Ellipsometry of Semiconductor Materials and Structures, Novosibirsk (Russian Federation); Cheong, Kuan Yew [Universiti Sains Malaysia, Electronic Materials Research Group, School of Materials and Mineral Resources Engineering, Engineering Campus, Seberang Perai Selatan, Penang (Malaysia)

2014-06-15

To date, the complex evaluation of physical and dispersive optical characteristics of the ZrON/Si film system has yet been reported. Hence, ZrON thin films have been formed on Si(100) substrates through oxidation/nitridation of sputtered metallic Zr in N{sub 2}O environment at 500, 700, and 900 C. Physical properties of the deposited films have been characterized by X-ray diffractometry (XRD), Fourier transform infrared (FTIR) spectroscopy, reflection high-energy electron diffraction (RHEED), and spectroscopic ellipsometry (SE). It has been shown that ZrON/Si thin films without optical absorption can be prepared by oxidation/nitridation reaction in N{sub 2}O environment at 700-900 C. (orig.)

Optical properties of the c-axis oriented LiNbO{sub 3} thin film

Energy Technology Data Exchange (ETDEWEB)

Shandilya, Swati; Sharma, Anjali [Department of Physics and Astrophysics, University of Delhi, Delhi-110007 (India); Tomar, Monika [Miranda House, University of Delhi, Delhi 110007 (India); Gupta, Vinay, E-mail: drguptavinay@gmail.com [Department of Physics and Astrophysics, University of Delhi, Delhi-110007 (India)

2012-01-01

C-axis oriented Lithium Niobate (LiNbO{sub 3}) thin films have been deposited onto epitaxially matched (001) sapphire substrate using pulsed laser deposition technique. Structural and optical properties of the thin films have been studied using the X-ray diffraction (XRD) and UV-Visible spectroscopy respectively. Raman spectroscopy has been used to study the optical phonon modes and defects in the c-axis oriented LiNbO{sub 3} thin films. XRD analysis indicates the presence of stress in the as-grown LiNbO{sub 3} thin films and is attributed to the small lattice mismatch between LiNbO{sub 3} and sapphire. Refractive index (n = 2.13 at 640 nm) of the (006) LiNbO{sub 3} thin films was found to be slightly lower from the corresponding bulk value (n = 2.28). Various factors responsible for the deviation in the refractive index of (006) LiNbO{sub 3} thin films from the corresponding bulk value are discussed and the deviation is mainly attributed to the lattice contraction due to the presence of stress in deposited film.

Study of optically thin electron cyclotron emission from TFTR using a Michelson interferometer

International Nuclear Information System (INIS)

Stauffer, F.J.; Boyd, D.A.

1986-01-01

The TFTR Michelson interferometer, which is used as an electron temperature diagnostic, has a spectral range of 75-540 GHz. This range is adequate for measuring at least the first three cyclotron harmonics, and it spans both optically thick and thin portions of the ECE spectrum. During the most recent opening of the TFTR vacuum vessel, a concave, carbon reflector was installed on the back wall of the vessel, opposite the light collecting optic of the Michelson system. The reflector is designed to prevent the observation of optically thin ECE that originates from a location that is outside the field of view of the light collecting optic. If this is achieved, it should be possible to derive the electron density profile from measurements of either the extraordinary mode third harmonic or the ordinary mode second harmonic. An analysis of ECE spectra that have been measured before and after installation of the reflector is presented

Optical and structural properties of ZnO/ZnMgO composite thin films prepared by sol–gel technique

International Nuclear Information System (INIS)

Xu, Linhua; Su, Jing; Chen, Yulin; Zheng, Gaige; Pei, Shixin; Sun, Tingting; Wang, Junfeng; Lai, Min

2013-01-01

Highlights: ► ZnMgO thin film and ZnO/ZnMgO composite thin film have been prepared by sol–gel method. ► The intensity of ultraviolet emission of ZnMgO thin film is enhanced two times compared with that of pure ZnO thin film. ► Compared with ZnMgO thin film, ZnO/ZnMgO composite thin film shows better crystallization and optical properties. ► ZnO/ZnMgO composite thin films prepared by sol–gel method have potential applications in many optoelectronic devices. - Abstract: In this study, pure ZnO thin film, Mg-doped ZnO (ZnMgO) thin film, ZnO/ZnMgO and ZnMgO/ZnO composite thin films were prepared by sol–gel technique. The structural and optical properties of the samples were analyzed by X-ray diffraction, scanning electron microscopy, UV–visible spectrophotometer, ellipsometer and photoluminescence spectra, respectively. The results showed that the incorporation of Mg increased the strain, broadened the optical bandgap, and improved the intensity of ultraviolet emission of ZnO thin film. The full width at half maximum (FWHM) of the ultraviolet emission peak was also increased due to Mg-doping at the same time. Compared with pure ZnO and ZnMgO thin films, the ZnO/ZnMgO thin film showed better crystalline quality and ultraviolet emission performance, smaller strains and higher transmittance in the visible range.

A comparative study: Effect of plasma on V{sub 2}O{sub 5} nanostructured thin films

Energy Technology Data Exchange (ETDEWEB)

Singh, Megha; Kumar, Prabhat; Sharma, Rabindar K., E-mail: rkrksharma6@gmail.com; Reddy, G. B. [Thin film laboratory, Department of Physics, Indian Institute of Technology Delhi, Delhi (India)

2016-05-06

Vanadium pentoxide nanostructured thin films (NSTs) have been studied to analyze the effect of plasma on nanostructures grown and morphology of films deposited using sublimation process. Nanostructured thin films were deposited on glass substrates, one in presence of oxygen plasma and other in oxygen environment (absence of plasma). Films were characterized using XRD, Raman spectroscopy, SEM and HRTEM. XRD studies revealed α-V{sub 2}O{sub 5} films (orthorhombic phase) with good crystallinity. However, film deposited in presence of plasma have higher peak intensities as compared to those deposited in absence of plasma. Raman studies also support these finding following same trends of considerable increase in intensity in case of film deposited in presence of plasma. SEM micrographs makes the difference more visible, as film deposited in plasma have well defined plate like structures whereas other film have not-clearly-defined petal-like structures. HRTEM results show orthorhombic phase with 0.39 nm interplanar spacing, as reported by XRD. Results are hereby in good agreement with each other.

A study on linear and non-linear optical constants of Rhodamine B thin film deposited on FTO glass

Energy Technology Data Exchange (ETDEWEB)

Yahia, I.S. [Nano-Science & Semiconductor Labs, Physics Department, Faculty of Education, Ain Shams University, Roxy, Cairo (Egypt); Department of Physics, Faculty of Science, King Khalid University, P.O. Box 9004, Abha (Saudi Arabia); Jilani, Asim, E-mail: asim.jilane@gmail.com [Centre of Nanotechnology, Physics Department-Faculty of Science-AL Faisaliah Campus, King Abdulaziz University, P.O. Box 80200, Jeddah 21589 (Saudi Arabia); Abutalib, M.M. [Centre of Nanotechnology, Physics Department-Faculty of Science-AL Faisaliah Campus, King Abdulaziz University, P.O. Box 80200, Jeddah 21589 (Saudi Arabia); AlFaify, S. [Nano-Science & Semiconductor Labs, Physics Department, Faculty of Education, Ain Shams University, Roxy, Cairo (Egypt); Shkir, M. [Department of Physics, Faculty of Science, King Khalid University, P.O. Box 9004, Abha (Saudi Arabia); Abdel-wahab, M.Sh.; Al-Ghamdi, Attieh A. [Centre of Nanotechnology, Physics Department-Faculty of Science-AL Faisaliah Campus, King Abdulaziz University, P.O. Box 80200, Jeddah 21589 (Saudi Arabia); El-Naggar, A.M. [Exploitation of Renewable Energy Applications in Saudi Arabia, Physics & Astronomy Department, College of Science, King Saud University, P.O.Box 2455, Riyadh 11451 (Saudi Arabia)

2016-06-01

The aim of this research was to fabricate/deposit the good quality thin film of Rhodamine B dye on fluorine doped tin oxide glass substrate by the low cost spin coating technique and study their linear and nonlinear optical parameters. The thickness of the thin film was measured about 300 nm with alpha step system. The transmittance of the fabricated thin film was found to be above 75% corresponding to the fluorine doped tin oxide layer. The structural analysis was performed with X-rays diffraction spectroscopy. Atomic force microscope showed the topographic image of deposited thin film. Linear optical constant like absorption coefficient, band gap, and extinction index was calculated. The dielectric constant was calculated to know the optical response of Rhodamine B dye over fluorine doped tin oxide substrate. The nonlinear optical constant like linear optical susceptibility χ{sup (1)}, nonlinear optical susceptibility χ{sup (3)}, nonlinear refractive index (n{sub 2}) were calculated by spectroscopic method. This method has advantage over the experimental method like Z-Scan for organic dye base semiconductors for future advance optoelectronics applications like dye synthesis solar cell.

Atomic data of Ti II from laser produced Ti plasmas by optical emission spectroscopy

International Nuclear Information System (INIS)

Refaie, A.I.; Farrag, A.A.; El Sharkawy, H.; El Sherbini, T.M.

2005-06-01

In the present study, the emission spectrum of titanium produced from laser induced plasma has been measured at different distances from the target. The Titanium target is irradiated by using the high power Q-switched Nd:YAG laser (λ=1064 nm) that generates energy 750 mJ/pulse of duration rate 6 ns and repetition rate 10 Hz in vacuum and at different distances. The variation of the distance from the target affects the measured plasma parameters, i.e. the electron density, the ion temperature and the velocity distribution. The electron density increases with the increase of the distance from the target. At a distance 0.6 mm from the target it decreases to 2.28·10 16 cm -3 . The temperature increases with the distance from the get until a distance of 1 mm, after that it decreases. It is found that the plasma velocity increases with the distance then it decreases again. Then, Energy levels and transition probabilities for 3d 2 4p →(3d 2 4s + 3d 3 ) lines have been determined by measurement of emission line intensities from an optically thin laser produced plasma of Ti II in vacuum. Calculations with intermediate coupling using Hartree-Fock wave functions have been carried out in order to place the experimental data on an absolute scale and also to evaluate the lifetimes. The plasma parameters in different regions of the plasma plume have been measured and used to obtain further transition probabilities. (author)

Optical and structural properties of thin films of ZnO at elevated temperature

International Nuclear Information System (INIS)

Kayani, Zohra N.; Afzal, Tosif; Riaz, Saira; Naseem, Shahzad

2014-01-01

Highlights: • Thin films of ZnO are prepared on glass substrates using dip-coating. • The X-ray diffraction showed that films are crystalline. • Optical measurements show that the film possesses high transmittance in visible region. • The transmission decreased with increased withdrawal speed. • The films has direct band gap in range 3.78-3.48 eV. - Abstract: Zinc oxide (ZnO) thin films were prepared on glass substrate by sol–gel dip-coating method. The paper presents the properties of zinc oxide thin films deposited on soda-lime-glass substrate via dip-coating technique, using zinc acetate dehydrate and ethanol as raw materials. The effect of withdrawal speed on the crystalline structure, surface morphology and optical properties of the thin films has been investigated using XRD, SEM and UV–Vis spectrophotometer. X-ray diffraction study shows that all the films have hexagonal wurtzite structure with preferred orientation in (0 0 2) direction and transmission spectra showed highly transparent films with band gap ranging from 3.78 to 3.48 eV

Influence of plasma density on the chemical composition and structural properties of pulsed laser deposited TiAlN thin films

Energy Technology Data Exchange (ETDEWEB)

Quiñones-Galván, J. G.; Camps, Enrique [Departamento de Física, Instituto Nacional de Investigaciones Nucleares, Apartado Postal 18-1027, México D.F. C.P. 11801 (Mexico); Muhl, S. [Instituto de Investigaciones en Materiales, UNAM, México D.F. C.P. 04510 (Mexico); Flores, M. [Departamento de Ingeniería de Proyectos, CUCEI, Universidad de Guadalajara, Apdo. Postal 307, C.P. 45101 Zapopan, Jalisco (Mexico); Campos-González, E. [Departamento de Física, CINVESTAV-IPN, Apdo. Postal 14-740, México D.F. 07360 (Mexico)

2014-05-15

Incorporation of substitutional Al into the TiN lattice of the ternary alloy TiAlN results in a material with improved properties compared to TiN. In this work, TiAlN thin films were grown by the simultaneous ablation of Ti and Al targets in a nitrogen containing reactive atmosphere. The deposit was formed on silicon substrates at low deposition temperature (200 °C). The dependence of the Al content of the films was studied as a function of the ion density of the plasma produced by the laser ablation of the Al target. The plasma parameters were measured by means of a planar Langmuir probe and optical emission spectroscopy. The chemical composition of the films was measured by energy dispersive X-ray spectroscopy. The results showed a strong dependence of the amount of aluminum incorporated in the films with the plasma density. The structural characterization of the deposits was carried out by Raman spectroscopy, X-ray diffraction, and transmission electron microscopy, where the substitutional incorporation of the Al into the TiN was demonstrated.

Optical properties of WO{sub 3} thin films using surface plasmon resonance technique

Energy Technology Data Exchange (ETDEWEB)

Paliwal, Ayushi; Sharma, Anjali; Gupta, Vinay, E-mail: drguptavinay@gmail.com, E-mail: vgupta@physics.du.ac.in [Department of Physics and Astrophysics, University of Delhi, Delhi 110007 (India); Tomar, Monika [Department of Physics, Miranda House, University of Delhi, Delhi 110007 (India)

2014-01-28

Indigenously assembled surface plasmon resonance (SPR) technique has been exploited to study the thickness dependent dielectric properties of WO{sub 3} thin films. WO{sub 3} thin films (80 nm to 200 nm) have been deposited onto gold (Au) coated glass prism by sputtering technique. The structural, optical properties and surface morphology of the deposited WO{sub 3} thin films were studied using X-ray diffraction, UV-visible spectrophotometer, Raman spectroscopy, and Scanning electron microscopy (SEM). XRD analysis shows that all the deposited WO{sub 3} thin films are exhibiting preferred (020) orientation and Raman data indicates that the films possess single phase monoclinic structure. SEM images reveal the variation in grain size with increase in thickness. The SPR reflectance curves of the WO{sub 3}/Au/prism structure were utilized to estimate the dielectric properties of WO{sub 3} thin films at optical frequency (λ = 633 nm). As the thickness of WO{sub 3} thin film increases from 80 nm to 200 nm, the dielectric constant is seen to be decreasing from 5.76 to 3.42, while the dielectric loss reduces from 0.098 to 0.01. The estimated value of refractive index of WO{sub 3} film is in agreement to that obtained from UV-visible spectroscopy studies. The strong dispersion in refractive index is observed with wavelength of incident laser light.

Thermal conductivities of thin, sputtered optical films

International Nuclear Information System (INIS)

Henager, C.H. Jr.; Pawlewicz, W.T.

1991-05-01

The normal component of the thin film thermal conductivity has been measured for the first time for several advanced sputtered optical materials. Included are data for single layers of boron nitride (BN), aluminum nitride (AIN), silicon aluminum nitride (Si-Al-N), silicon aluminum oxynitride (Si-Al-O-N), silicon carbide (SiC), and for dielectric-enhanced metal reflectors of the form Al(SiO 2 /Si 3 N 4 ) n and Al(Al 2 O 3 /AIN) n . Sputtered films of more conventional materials like SiO 2 , Al 2 O 3 , Ta 2 O 5 , Ti, and Si have also been measured. The data show that thin film thermal conductivities are typically 10 to 100 times lower than conductivities for the same materials in bulk form. Structural disorder in the amorphous or very fine-grained films appears to account for most of the conductivity difference. Conclusive evidence for a film/substrate interface contribution is presented

Practice-oriented optical thin film growth simulation via multiple scale approach

Energy Technology Data Exchange (ETDEWEB)

Turowski, Marcus, E-mail: m.turowski@lzh.de [Laser Zentrum Hannover e.V., Hollerithallee 8, Hannover 30419 (Germany); Jupé, Marco [Laser Zentrum Hannover e.V., Hollerithallee 8, Hannover 30419 (Germany); QUEST: Centre of Quantum Engineering and Space-Time Research, Leibniz Universität Hannover (Germany); Melzig, Thomas [Fraunhofer Institute for Surface Engineering and Thin Films IST, Bienroder Weg 54e, Braunschweig 30108 (Germany); Moskovkin, Pavel [Research Centre for Physics of Matter and Radiation (PMR-LARN), University of Namur (FUNDP), 61 rue de Bruxelles, Namur 5000 (Belgium); Daniel, Alain [Centre for Research in Metallurgy, CRM, 21 Avenue du bois Saint Jean, Liège 4000 (Belgium); Pflug, Andreas [Fraunhofer Institute for Surface Engineering and Thin Films IST, Bienroder Weg 54e, Braunschweig 30108 (Germany); Lucas, Stéphane [Research Centre for Physics of Matter and Radiation (PMR-LARN), University of Namur (FUNDP), 61 rue de Bruxelles, Namur 5000 (Belgium); Ristau, Detlev [Laser Zentrum Hannover e.V., Hollerithallee 8, Hannover 30419 (Germany); QUEST: Centre of Quantum Engineering and Space-Time Research, Leibniz Universität Hannover (Germany)

2015-10-01

Simulation of the coating process is a very promising approach for the understanding of thin film formation. Nevertheless, this complex matter cannot be covered by a single simulation technique. To consider all mechanisms and processes influencing the optical properties of the growing thin films, various common theoretical methods have been combined to a multi-scale model approach. The simulation techniques have been selected in order to describe all processes in the coating chamber, especially the various mechanisms of thin film growth, and to enable the analysis of the resulting structural as well as optical and electronic layer properties. All methods are merged with adapted communication interfaces to achieve optimum compatibility of the different approaches and to generate physically meaningful results. The present contribution offers an approach for the full simulation of an Ion Beam Sputtering (IBS) coating process combining direct simulation Monte Carlo, classical molecular dynamics, kinetic Monte Carlo, and density functional theory. The simulation is performed exemplary for an existing IBS-coating plant to achieve a validation of the developed multi-scale approach. Finally, the modeled results are compared to experimental data. - Highlights: • A model approach for simulating an Ion Beam Sputtering (IBS) process is presented. • In order to combine the different techniques, optimized interfaces are developed. • The transport of atomic species in the coating chamber is calculated. • We modeled structural and optical film properties based on simulated IBS parameter. • The modeled and the experimental refractive index data fit very well.

Effect of substrate baking temperature on zinc sulfide and germanium thin films optical parameters

Science.gov (United States)

Liu, Fang; Gao, Jiaobo; Yang, Chongmin; Zhang, Jianfu; Liu, Yongqiang; Liu, Qinglong; Wang, Songlin; Mi, Gaoyuan; Wang, Huina

2016-10-01

ZnS and Ge are very normal optical thin film materials in Infrared wave. Studying the influence of different substrate baking temperature to refractive index and actual deposition rates is very important to promote optical thin film quality. In the same vacuum level, monitoring thickness and evaporation rate, we use hot evaporation to deposit ZnS thin film materials and use ion-assisted electron beam to deposit Ge thin film materials with different baking temperature. We measure the spectral transmittance with the spectrophotometer and calculate the actual deposition rates and the refractive index in different temperature. With the higher and higher temperature in a particular range, ZnS and Ge refractive index become higher and actual deposition rates become smaller. The refractive index of Ge film material change with baking temperature is more sensitive than ZnS. However, ZnS film actual deposition rates change with baking temperature is more sensitive than Ge.

Sputter deposition of PZT piezoelectric films on thin glass substrates for adjustable x-ray optics.

Science.gov (United States)

Wilke, Rudeger H T; Johnson-Wilke, Raegan L; Cotroneo, Vincenzo; Davis, William N; Reid, Paul B; Schwartz, Daniel A; Trolier-McKinstry, Susan

2013-05-10

Piezoelectric PbZr(0.52)Ti(0.48)O(3) (PZT) thin films deposited on thin glass substrates have been proposed for adjustable optics in future x-ray telescopes. The light weight of these x-ray optics enables large collecting areas, while the capability to correct mirror figure errors with the PZT thin film will allow much higher imaging resolution than possible with conventional lightweight optics. However, the low strain temperature and flexible nature of the thin glass complicate the use of chemical-solution deposition due to warping of the substrate at typical crystallization temperatures for the PZT. RF magnetron sputtering enabled preparation of PZT films with thicknesses up to 3 μm on Schott D263 glass substrates with much less deformation. X-ray diffraction analysis indicated that the films crystallized with the perovskite phase and showed no indication of secondary phases. Films with 1 cm(2) electrodes exhibited relative permittivity values near 1100 and loss tangents below 0.05. In addition, the remanent polarization was 26 μC/cm(2) with coercive fields of 33 kV/cm. The transverse piezoelectric coefficient was as high as -6.1±0.6 C/m(2). To assess influence functions for the x-ray optics application, the piezoelectrically induced deflection of individual cells was measured and compared with finite-element-analysis calculations. The good agreement between the results suggests that actuation of PZT thin films can control mirror figure errors to a precision of about 5 nm, allowing sub-arcsecond imaging.

Low-temperature preparation of rutile-type TiO2 thin films for optical coatings by aluminum doping

Science.gov (United States)

Ishii, Akihiro; Kobayashi, Kosei; Oikawa, Itaru; Kamegawa, Atsunori; Imura, Masaaki; Kanai, Toshimasa; Takamura, Hitoshi

2017-08-01

A rutile-type TiO2 thin film with a high refractive index (n), a low extinction coefficient (k) and small surface roughness (Ra) is required for use in a variety of optical coatings to improve the controllability of the reflection spectrum. In this study, Al-doped TiO2 thin films were prepared by pulsed laser deposition, and the effects of Al doping on their phases, optical properties, surface roughness and nanoscale microstructure, including Al distribution, were investigated. By doping 5 and 10 mol%Al, rutile-type TiO2 was successfully prepared under a PO2 of 0.5 Pa at 350-600 °C. The nanoscale phase separation in the Al-doped TiO2 thin films plays an important role in the formation of the rutile phase. The 10 mol%Al-doped rutile-type TiO2 thin film deposited at 350 °C showed excellent optical properties of n ≈ 3.05, k ≈ 0.01 (at λ = 400 nm) and negligible surface roughness, at Ra ≈ 0.8 nm. The advantages of the superior optical properties and small surface roughness of the 10 mol%Al-doped TiO2 thin film were confirmed by fabricating a ten-layered dielectric mirror.

Optical characterization of a-Si:H thin films grown by Hg-Photo-CVD

International Nuclear Information System (INIS)

Barhdadi, A.; Karbal, S.; M'Gafad, N.; Benmakhlouf, A.; Chafik El Idrissi, M.; Aka, B.M.

2006-08-01

Mercury-Sensitized Photo-Assisted Chemical Vapor Deposition (Hg-Photo-CVD) technique opens new possibilities for reducing thin film growth temperature and producing novel semiconductor materials suitable for the future generation of high efficiency thin film solar cells onto low cost flexible plastic substrates. This paper provides some experimental data resulting from the optical characterization of hydrogenated amorphous silicon thin films grown by this deposition technique. Experiments have been performed on both as-deposited layers and thermal annealed ones. (author) [fr

Study of structural and optical properties of Cd{sub 1-x}Zn{sub x}Se thin films

Energy Technology Data Exchange (ETDEWEB)

Wahab, L.A., E-mail: aly_lo2003@yahoo.com [National Center for Radiation Research and Technology, Nasr City, Cairo (Egypt); Zayed, H.A. [University Collage of Women for Art, Science and Education, Ain Shams University, Cairo (Egypt); El-Galil, A.A. Abd [National Center for Radiation Research and Technology, Nasr City, Cairo (Egypt)

2012-06-01

Cd{sub 1-x}Zn{sub x}Se (x = 0, 0.5 and 1) thin films have been deposited onto glass substrates using thermal evaporation technique. The lattice constants, grain size, microstrain and dislocation density were studied by using X-ray diffraction. In addition the optical constants were calculated in the wavelength range 400-2500 nm. Transmittance and reflectance were used to calculate the absorption coefficient {alpha} and the optical band gap E{sub g}. The linear relation of ({alpha}h{upsilon}){sup 2} as a function of photon energy h{upsilon} for the thin films illustrated that the films exhibit a direct band gap, which increases with increasing Zn content. This increasing of optical band gap was interpreted in accordance to the increasing in the cohesive energy. Optical constants, such as refractive index n, optical conductivity {sigma}{sub opt}, complex dielectric constant, relaxation time {tau} and dissipation factor tan{delta} were determined. The optical dispersion parameters E{sub 0}, E{sub d} were determined according to Wemple and Di Domenico method. - Highlights: Black-Right-Pointing-Pointer ZnSe thin film has cubic zinc blende structure while CdSe and Cd{sub 0.5}Zn{sub 0.5}Se thin films have hexagonal structure. Black-Right-Pointing-Pointer Grain size of Cd{sub 1-x}Zn{sub x}Se decreases with increasing x (x = 0, 0.5 and 1). Black-Right-Pointing-Pointer Optical band gap increases with increasing x.

Radio-frequency oxygen-plasma-enhanced pulsed laser deposition of IGZO films

Science.gov (United States)

Chou, Chia-Man; Lai, Chih-Chang; Chang, Chih-Wei; Wen, Kai-Shin; Hsiao, Vincent K. S.

2017-07-01

We demonstrate the crystalline structures, optical transmittance, surface and cross-sectional morphologies, chemical compositions, and electrical properties of indium gallium zinc oxide (IGZO)-based thin films deposited on glass and silicon substrates through pulsed laser deposition (PLD) incorporated with radio-frequency (r.f.)-generated oxygen plasma. The plasma-enhanced pulsed laser deposition (PEPLD)-based IGZO thin films exhibited a c-axis-aligned crystalline (CAAC) structure, which was attributed to the increase in Zn-O under high oxygen vapor pressure (150 mTorr). High oxygen vapor pressure (150 mTorr) and low r.f. power (10 W) are the optimal deposition conditions for fabricating IGZO thin films with improved electrical properties.

Plasma Electrode Pockels Cells for the Beamlet and NIF lasers

International Nuclear Information System (INIS)

Rhodes, M.A.; Woods, B.; DeYoreo, J.; Atherton, J.

1994-05-01

We describe Plasma Electrode Pockels Cells (PEPC) for the Beamlet laser and the proposed National Ignition Facility (NIF) laser. These PEPCs, together with passive polarizers, function as large aperture (> 35 x 35 cm 2 ) optical switches enabling the design of high-energy (> 5 kJ), multipass laser amplifiers. In a PEPC, plasma discharges form on both sides of a thin (1 cm) electro-optic crystal (KDP). These plasma discharges produce highly conductive and transparent electrodes that facilitate rapid (< 100 ns) and uniform charging of the KDP up to the half-wave voltage (17 kV) and back to zero volts. We discuss the operating principles, design, and optical performance of the Beamlet PEPC and briefly discuss our plans to extend PEPC technology for the NIF

Optimization of time on CF{sub 4}/O{sub 2} etchant for inductive couple plasma reactive ion etching of TiO{sub 2} thin film

Energy Technology Data Exchange (ETDEWEB)

Adzhri, R., E-mail: adzhri@gmail.com; Fathil, M. F. M.; Ruslinda, A. R.; Gopinath, Subash C. B.; Voon, C. H.; Foo, K. L.; Nuzaihan, M. N. M.; Azman, A. H.; Zaki, M. [Institute of Nano Electronic Engineering (INEE), Universiti Malaysia Perlis (UniMAP), Perlis (Malaysia); Arshad, M. K. Md., E-mail: mohd.khairuddin@unimap.edu.my; Hashim, U.; Ayub, R. M. [Institute of Nano Electronic Engineering (INEE), Universiti Malaysia Perlis (UniMAP), Perlis (Malaysia); School of Microelectronic Engineering, Universiti Malaysia Perlis (UniMAP), Perlis (Malaysia)

2016-07-06

In this work, we investigate the optimum etching of titanium dioxide (TiO{sub 2}) using inductive couple plasma reactive ion etching (ICP-RIE) on our fabricated devices. By using a combination of CF{sub 4}/O{sub 2} gases as plasma etchant with ratio of 3:1, three samples of TiO{sub 2} thin film were etched with different time duration of 10 s, 15 s and 20 s. The ion bombardment of CF{sub 4} gases with plasma enhancement by O{sub 2} gas able to break the oxide bond of TiO{sub 2} and allow anisotropic etch profile with maximum etch rate of 18.6 nm/s. The sample was characterized by using optical profilometer to determine the depth of etched area and scanning electron microscopy (SEM) for etch profile characterization.

Structural, optical and electrical properties of ZnO thin films prepared ...

Indian Academy of Sciences (India)

Administrator

of zinc acetate on glass substrates at 450 °C. Effect of precursor concentration on structural and optical pro- perties has ... dependence of photoresponse properties of sprayed ZnO thin films on ... randomly oriented flake-like grains. The grains ...

RX emission of thin astrophysical plasma: interstellar medium and intra-cluster medium

International Nuclear Information System (INIS)

Arnaud, Monique

1984-01-01

As previous publications presented an important discrepancy of ionisation rates in astrophysical plasmas, this research thesis first reports a systematic study (by isoelectric sequence) of ionisation cross sections, based on measurements performed by mono-energetic beams, and on quantum assessments. The author proposes simple analytic fits for ionisation rates, for direct ionisation and for excitation-self-ionisation of ions of interest in astrophysics. He reports a critical review of recombination rates published in the literature, and the calculation of radiative recombination rates for different ions (hydrogen-like, helium-like, and lithium-like). Software have then been developed to determine the ionisation rate at the equilibrium and out of it for thin plasma, and to obtain ion fraction tables for different ions (H, He, C, N, O, Ne, Na, Mg, Al, Si, S, Ar, Ca, Fe, Ni). Then, a software integrating recent data on collisional excitation rates has been used to calculate the emission spectrum of a thin plasma with respect to temperature. These results are then used for the study of the interstellar medium and of supernovae remnants, and finally for the study of the intra-cluster medium [fr

Fabrication of Au/graphene oxide/Ag sandwich structure thin film and its tunable energetics and tailorable optical properties

Directory of Open Access Journals (Sweden)

Ruijin Hong

2017-01-01

Full Text Available Au/graphene oxide/Ag sandwich structure thin film was fabricated. The effects of graphene oxide (GO and bimetal on the structure and optical properties of metal silver films were investigated by X-ray diffraction (XRD, optical absorption, and Raman intensity measurements, respectively. Compared to silver thin film, Au/graphene oxide/Ag sandwich structure composite thin films were observed with wider optical absorption peak and enhanced absorption intensity. The Raman signal for Rhodamine B molecules based on the Au/graphene oxide/Ag sandwich nanostructure substrate were obviously enhanced due to the bimetal layer and GO layer with tunable absorption intensity and fluorescence quenching effects.

Electro-optical frequency shifting of lasers for plasma diagnostics

International Nuclear Information System (INIS)

Forman, P.R.

1977-07-01

An electro-optical frequency shifting device is proposed as an aid for plasma physics heterodyne interferometry and heterodyne scattering experiments. The method has the advantage over other electro-optic shifters, that a pure separable frequency shifted beam can be obtained even when less than half wave voltage is applied. (orig.) [de

Optically Transparent Thin-Film Electrode Chip for Spectroelectrochemical Sensing

Energy Technology Data Exchange (ETDEWEB)

Branch, Shirmir D.; Lines, Amanda M.; Lynch, John A.; Bello, Job M.; Heineman, William R.; Bryan, Samuel A.

2017-07-03

The electrochemical and spectroelectrochemical applications of an optically transparent thin film electrode chip are investigated. The working electrode is composed of indium tin oxide (ITO); the counter and quasi-reference electrodes are composed of platinum. The stability of the platinum quasi-reference electrode is modified by coating it with a planar, solid state Ag/AgCl layer. The Ag/AgCl reference is characterized with scanning electron microscopy and energy-dispersive X-ray spectroscopy. Open circuit potential measurements indicate that the potential of the planar Ag/AgCl electrode varies a maximum of 20 mV over four days. Cyclic voltammetry measurements show that the electrode chip is comparable to a standard electrochemical cell. Randles-Sevcik analysis of 10 mM K3[Fe(CN)6] in 0.1 M KCl using the electrode chip shows a diffusion coefficient of 1.59 × 10-6 cm2/s, in comparison to the standard electrochemical cell value of 2.38 × 10-6 cm2/s. By using the electrode chip in an optically transparent thin layer electrode (OTTLE), the spectroelectrochemical modulation of [Ru(bpy)3]2+ florescence was demonstrated, achieving a detection limit of 36 nM.

Modification of low temperature deposited LiMn2O4 thin film cathodes by oxygen plasma irradiation

International Nuclear Information System (INIS)

Chen, Chen Chung; Chiu, Kuo-Feng; Lin, Kun Ming; Lin, Hsin Chih

2009-01-01

Lithium manganese oxides have been deposited by radio frequency magnetron sputter deposition with relatively lower annealing temperatures and then post-treated with a radio frequency (rf) driven oxygen plasma. Following oxygen plasma irradiation, the film properties were modified, and the performance of the thin film cathode has been enhanced. The electrochemical properties of the treated thin-film cathodes were characterized and compared. The results showed that the samples with moderate plasma treatment also maintained good cyclic properties as cycled at a wide range potential window of 2.0 V-4.5 V. Its electrochemical properties were significantly improved by this process, even though the films were prepared under low annealing temperature.

Electrical and Optical Properties of GeSi−:H Thin Films Prepared by Thermal Evaporation Method

Directory of Open Access Journals (Sweden)

A. A. J. Al-Douri

2010-01-01

Full Text Available Thin a-GeSi1−:H films were grown successfully by fabrication of designated ingot followed by evaporation onto glass slides. A range of growth conditions, Ge contents, dopant concentration (Al and As, and substrate temperature, were employed. Stoichiometry of the thin films composition was confirmed using standard surface techniques. The structure of all films was amorphous. Film composition and deposition parameters were investigated for their bearing on film electrical and optical properties. More than one transport mechanism is indicated. It was observed that increasing substrate temperature, Ge contents, and dopant concentration lead to a decrease in the optical energy gap of those films. The role of the deposition conditions on values of the optical constants was determined. Accordingly, models of the density of states for the Ge0.5Si0.5:H thin films as pure, doped with 3.5% of Al (p-type and that doped with 3.5% As (n-type, were proposed.

Thinning of multilayer graphene to monolayer graphene in a plasma environment

International Nuclear Information System (INIS)

Hazra, K S; Misra, D S; Rafiee, J; Rafiee, M A; Koratkar, N; Mathur, A; Roy, S S; McLauhglin, J

2011-01-01

We present a facile approach to transform multilayer graphene to single-layer graphene in a gradual thinning process. Our technique is based upon gradual etching of multilayer graphene in a hydrogen and nitrogen plasma environment. High resolution transmission microscopy, selected area electron diffraction and Raman spectroscopy confirm the transformation of multilayer graphene to monolayer graphene at a substrate temperature of ∼ 400 0 C. The shift in the position of the G-band peak shows a perfect linear dependence with substrate temperature, which indicates a controlled gradual etching process. Selected area electron diffraction also confirmed the removal of functional groups from the graphene surface due to the plasma treatment. We also show that plasma treatment can be used to engineer graphene nanomesh structures.

Optical characteristics of a gallium laser plasma

International Nuclear Information System (INIS)

Shuaibov, A.K.; Shimon, L.L.; Dashchenko, A.I.; Shevera, I.V.; Chuchman, M.P.

2001-01-01

Results are presented from studies of the emission from an erosion gallium laser plasma at a moderate intensity (W = (1-5) x 10 8 W/cm 2 ) of a 1.06-μm laser radiation. It is shown that, under these conditions, the lower excited states of gallium atoms are populated most efficiently. Among the ions, only the most intense GaII lines are observed in the emission spectrum. The populations of GaI and GaII excited states are not related to direct electron excitation, but are determined by the recombination of gallium ions with slow electrons. The recombination times of GaIII and GaII ions in the core of the plasma jet are determined from the waveforms of emission in the GaII and GaI spectral lines and are equal to 10 and 140 ns, respectively. The results obtained are of interest for spectroscopic diagnostics of an erosion plasma produced from gallium-containing layered crystals during the laser deposition of thin films

WO.sub.3./sub. thin films prepared by sedimentation and plasma sputtering

Czech Academy of Sciences Publication Activity Database

Olejníček, Jiří; Brunclíková, Michaela; Kment, Š.; Hubička, Zdeněk; Kmentová, N.; Kšírová, Petra; Čada, Martin; Zlámal, M.; Krýsa, J.

2017-01-01

Roč. 318, Jun (2017), s. 281-288 ISSN 1385-8947 R&D Projects: GA TA ČR(CZ) TF01000084; GA ČR(CZ) GA15-00863S; GA TA ČR TA03010743; GA ČR GAP108/12/2104 Institutional support: RVO:68378271 Keywords : WO 3 * thin films * water splitting * pulsed magnetron sputtering * sedimentation * photo-electro-chemistry Subject RIV: BL - Plasma and Gas Discharge Physics OBOR OECD: Fluids and plasma physics (including surface physics) Impact factor: 6.216, year: 2016

Optical and Magneto-Optical Properties of Gd22Fe78 Thin Films in the Photon Energy Range From 1.5 to 5.5 eV

Directory of Open Access Journals (Sweden)

Eva Jesenská

2016-01-01

Full Text Available Optical and magneto-optical properties of amorphous Gd22Fe78 (GdFe thin films prepared by direct current (DC sputtering on thermally oxidized substrates were characterized by the combination of spectroscopic ellipsometry and magneto-optical spectroscopy in the photon energy range from 1.5 to 5.5 eV. Thin SiNx and Ru coatings were used to prevent the GdFe surface oxidation and contamination. Using advanced theoretical models spectral dependence of the complete permittivity tensor and spectral dependence of the absorption coefficient were deduced from experimental data. No significant changes in the optical properties upon different coatings were observed, indicating reliability of used analysis.

Ferrofluid thin films as optical gaussmeters proposed for field and ...

Indian Academy of Sciences (India)

Department of Physics, Cochin University of Science and Technology, Cochin 682 022, India ... Magnetic field induced laser transmission through these ... An optical gaussmeter can be formulated with these ferrofluid thin films with the help of an LDR, and a laser (a diode laser or a cheaper torch laser which gives a stream ...

Optical constants and band edge of amorphous zinc oxide thin films

International Nuclear Information System (INIS)

Khoshman, Jebreel M.; Kordesch, Martin E.

2007-01-01

The optical characteristics of amorphous zinc oxide (a-ZnO) thin films grown by radio frequency reactive magnetron sputtering on various substrates at temperature -8 -0.32, respectively. The band edge of the films on Si (100) and quartz has been determined by spectroscopic ellipsometry (3.39 ± 0.05 eV) and spectrophotometric (3.35 ± 0.05 eV) methods, respectively. From the angle dependence of the p-polarized reflectivity we deduce a Brewster angle of 60.5 deg. Measurement of the polarized optical properties shows a high transmissivity (81%-99%) and low absorptivity (< 5%) in the visible and near infrared regions at different angles of incidence. Also, we found that there was a higher absorptivity for wavelength < 370 nm. This wavelength, ∼ 370 nm, therefore indicated that the band edge for a-ZnO thin films is about 3.35 eV

Structural, morphological and optical properties of spray deposited Mn-doped CeO2 thin films

International Nuclear Information System (INIS)

Pavan Kumar, CH.S.S.; Pandeeswari, R.; Jeyaprakash, B.G.

2014-01-01

Highlights: • Spray deposited undoped and Mn-doped CeO 2 thin films were polycrystalline. • Complete changeover of surface morphology upon 4 wt% Mn doping. • 4 wt% Mn-doped CeO 2 thin film exhibited a hydrophobic nature. • Optical band-gap decreases beyond 2 wt% Mn doping. - Abstract: Cerium oxide and manganese (Mn) doped cerium oxide thin films on glass substrates were prepared by home built spray pyrolysis system. The effect of Mn doping on the structural, morphological and optical properties of CeO 2 films were studied. It was found that both the undoped and doped CeO 2 films were polycrystalline in nature but the preferential orientation and grain size changed upon doping. Atomic force micrograph showed a complete changeover of surface morphology from spherical to flake upon doping. A water contact angle result displayed the hydrophobic nature of the doped CeO 2 film. Optical properties indicated an increase in band-gap and a decrease in transmittance upon doping owing to Moss–Burstein effect and inverse Moss–Burstein effects. Other optical properties such as refractive index, extinction coefficient and dielectric constant as a function of doping were analysed and reported

Laser-induced carbon plasma emission spectroscopic measurements on solid targets and in gas-phase optical breakdown

International Nuclear Information System (INIS)

Nemes, Laszlo; Keszler, Anna M.; Hornkohl, James O.; Parigger, Christian

2005-01-01

We report measurements of time- and spatially averaged spontaneous-emission spectra following laser-induced breakdown on a solid graphite/ambient gas interface and on solid graphite in vacuum, and also emission spectra from gas-phase optical breakdown in allene C3H4 and helium, and in CO2 and helium mixtures. These emission spectra were dominated by CII (singly ionized carbon), CIII (doubly ionized carbon), hydrogen Balmer beta (H b eta), and Swan C2 band features. Using the local thermodynamic equilibrium and thin plasma assumptions, we derived electron number density and electron temperature estimates. The former was in the 1016 cm -3 range, while the latter was found to be near 20000 K. In addition, the vibration-rotation temperature of the Swan bands of the C2 radical was determined to be between 4500 and 7000 K, using an exact theoretical model for simulating diatomic emission spectra. This temperature range is probably caused by the spatial inhomogeneity of the laser-induced plasma plume. Differences are pointed out in the role of ambient CO2 in a solid graphite target and in gas-phase breakdown plasma

Structural and optical properties of cobalt doped multiferroics BiFeO3 nanostructure thin films

Science.gov (United States)

Prasannakumara, R.; Naik, K. Gopalakrishna

2018-05-01

Bismuth ferrite (BiFeO3) and Cobalt doped BiFeO3 (BiFe1-XCoXO3) nanostructure thin films were deposited on glass substrates by the sol-gel spin coating method. The X-ray diffraction patterns (XRD) of the grown BiFeO3 and BiFe1-XCoXO3 nanostructure thin films showed distorted rhombohedral structure. The shifting of peaks to higher angles was observed in cobalt doped BiFeO3. The surface morphology of the BiFeO3 and BiFe1-XCoXO3 nanostructure thin films were studied using FESEM, an increase in grain size was observed as Co concentration increases. The thickness of the nanostructure thin films was examined using FESEM cross-section. The EDX studies confirmed the elemental composition of the grown BiFeO3 and BiFe1-XCoXO3 nanostructure thin films. The optical characterizations of the grown nanostructure thin films were carried out using FTIR, it confirms the existence of Fe-O and Bi-O bands and UV-Visible spectroscopy shows the increase in optical band gap of the BiFeO3 nanostructure thin films with Co doping by ploting Tauc plot.

Temperature dependent optical properties of (002) oriented ZnO thin film using surface plasmon resonance

Science.gov (United States)

Saha, Shibu; Mehan, Navina; Sreenivas, K.; Gupta, Vinay

2009-08-01

Temperature dependent optical properties of c-axis oriented ZnO thin film were investigated using surface plasmon resonance (SPR) technique. SPR data for double layer (prism-Au-ZnO-air) and single layer (prism-Au-air) systems were taken over a temperature range (300-525 K). Dielectric constant at optical frequency and real part of refractive index of the ZnO film shows an increase with temperature. The bandgap of the oriented ZnO film was found to decrease with rise in temperature. The work indicates a promising application of the system as a temperature sensor and highlights an efficient scientific tool to study optical properties of thin film under varying ambient conditions.

Optical behaviour of sprayed tin sulphide thin films

International Nuclear Information System (INIS)

Reddy, N. Koteeswara; Reddy, K.T. Ramakrishna

2006-01-01

SnS films have been grown by spray pyrolysis technique on Corning 7059 glass substrates at different substrate temperatures that vary in the range of 100-450deg. C, keeping the other deposition parameters constant. The optical properties of the films were systematically studied using the optical transmittance and reflectance data. The optical absorption coefficient and optical energy band gap of the films were evaluated. The variation of refractive index and extinction coefficient with photon energy for the films grown at different temperatures were studied. The SnS films grown at the substrate temperature range 300-375deg. C, were showed an absorption coefficient >10 4 cm -1 with the energy band gap 1.32eV, measured at room temperature. For these films, the material properties such as the dielectric constants (n, n 0 , k, ε 0 and ε ∞ ), plasma frequency (ω p ), hole effective mass (m h *) and carrier density (N opt ) were also evaluated

FINAL REPORT "Extreme non-linear optics of plasmas" Pierre Michel (16-LW-022)

Energy Technology Data Exchange (ETDEWEB)

Michel, Pierre [Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)

2017-11-03

Large laser facilities such as the National Ignition Facility (NIF) are typically limited in performance and physical scale (and thus cost) by optics damage. In this LDRD, we investigated a radically new way to manipulate light at extreme powers and energies, where “traditional” (crystal-based) optical elements are replaced by a medium that is already “broken” and thus does not suffer from optics damage: a plasma. Our method consisted in applying multiple lasers into plasmas to imprint refractive micro-structures with optical properties designed to be similar to those of crystals or dielectric structures used in optics. In particular, we focused our efforts on two elements used to manipulate the polarization of lasers (i.e. the orientation of the light’s electric field vector): i) a polarizer, which only lets a given polarization direction pass and blocks the others, and ii) a “Pockels cell”, which can “rotate” the polarization direction or convert it from linear to elliptical or circular. These two elements are essential building blocks in almost all laser systems – for example, they can be combined to design optical gates. Here, we introduced the new concepts of a “plasma polarizer” and a “plasma Pockels cell”. Both concepts were demonstrated in proof-of-principle laboratory experiments in this LDRD. We also demonstrated that such laser-plasma systems could be used to provide full control of the refractive index of plasmas as well as their dispersion (variation of the index vs. the light wavelength), which constituted the basis for a final experiment aimed at demonstrating the feasibility of “slow light” in plasmas, i.e. the capability to slow down a light pulse almost to a full stop.

Physical properties of chemically deposited Bi{sub 2}S{sub 3} thin films using two post-deposition treatments

Energy Technology Data Exchange (ETDEWEB)

Moreno-García, H., E-mail: hamog@ier.unam.mx [Instituto de Ciencias Físicas, Laboratorio de espectroscopia, Universidad Nacional Autónoma de México, Apartado Postal 48-3, C.P. 62210 Cuernavaca, Morelos (Mexico); Messina, S. [Universidad Autónoma de Nayarit, Ciudad de la Cultura “Amado Nervo” S/N, C.P. 63155 Tepic, Nayarit (Mexico); Calixto-Rodriguez, M. [Universidad Tecnológica Emiliano Zapata del Estado de Morelos, Av. Universidad Tecnológica No. 1, C.P. 62760 Emiliano Zapata, Morelos (Mexico); Martínez, H. [Instituto de Ciencias Físicas, Laboratorio de espectroscopia, Universidad Nacional Autónoma de México, Apartado Postal 48-3, C.P. 62210 Cuernavaca, Morelos (Mexico)

2014-08-30

Highlights: • The post-deposition treatment by Ar plasma is a viable alternative to enhance the optical, electrical, morphological and structural properties of Bi{sub 2}S{sub 3} semiconductor thin films. • The plasma treatment avoids the loss in thickness of the chemically deposited Bi{sub 2}S{sub 3} thin films. • The E{sub g} values were 1.60 eV for the thermally annealed samples and 1.56 eV for the Ar plasma treated samples. • The highest value obtained for the electrical conductivity was 7.7 × 10{sup −2} (Ω cm){sup −1} in plasma treated samples. - Abstract: As-deposited bismuth sulfide (Bi{sub 2}S{sub 3}) thin films prepared by chemical bath deposition technique were treated with thermal annealed in air atmosphere and argon AC plasma. The as-deposited, thermally annealing and plasma treatment Bi{sub 2}S{sub 3} thin films have been characterized by X-ray diffraction (XRD) analysis, atomic force microscopy analysis (AFM), transmission, specular reflectance and electrical measurements. The structural, morphological, optical and electrical properties of the films are compared. The XRD analysis showed that both post-deposition treatments, transform the thin films from amorphous to a crystalline phase. The atomic force microscopy (AFM) measurement showed a reduction of roughness for the films treated in plasma. The energy band gap value of the as-prepared film was E{sub g} = 1.61 eV, while for the film thermally annealed was E{sub g} = 1.60 eV and E{sub g} = 1.56 eV for film treated with Plasma. The electrical conductivity under illumination of the as-prepared films was 3.6 × 10{sup −5} (Ω cm){sup −1}, whereas the conductivity value for the thermally annealed films was 2.0 × 10{sup −3} (Ω cm){sup −1} and for the plasma treated films the electrical conductivity increases up to 7.7 × 10{sup −2} (Ω cm){sup −1}.

Annealing Temperature Dependent Structural and Optical Properties of RF Sputtered ZnO Thin Films.

Science.gov (United States)

Sharma, Shashikant; Varma, Tarun; Asokan, K; Periasamy, C; Boolchandani, Dharmendar

2017-01-01

This work investigates the effect of annealing temperature on structural and optical properties of ZnO thin films grown over Si 100 and glass substrates using RF sputtering technique. Annealing temperature has been varied from 300 °C to 600 °C in steps of 100, and different microstructural parameters such as grain size, dislocation density, lattice constant, stress and strain have been evaluated. The structural and surface morphological characterization has been done using X-ray Diffraction (XRD) and Scanning Electron Microscope (SEM). XRD analysis reveals that the peak intensity of 002 crystallographic orientation increases with increased annealing temperature. Optical characterization of deposited films have been done using UV-Vis-NIR spectroscopy and photoluminescence spectrometer. An increase in optical bandgap of deposited ZnO thin films with increasing annealing temperature has been observed. The average optical transmittance was found to be more than 85% for all deposited films. Photoluminiscense spectra (PL) suggest that the crystalline quality of deposited film has increased at higher annealing temperature.

Determination of the optical parameters of a-Si:H thin films ...

Indian Academy of Sciences (India)

single-effective oscillator model to the a-Si:H samples to calculate the optical ..... et al [23] and have similar trend as those shown by El-Sayed and Amin [24]. .... [3] K L Chopra, Thin film phenomena (McGraw-Hill Book Company, USA, 1969).

Application of diffusion theory to neutral atom transport in fusion plasmas

International Nuclear Information System (INIS)

Hasan, M.Z.; Conn, R.W.; Pomraning, G.C.

1986-05-01

It is found that energy dependent diffusion theory provides excellent accuracy in the modelling of transport of neutral atoms in fusion plasmas. Two reasons in particular explain the good accuracy. First, while the plasma is optically thick for low energy neutrals, it is optically thin for high energy neutrals and diffusion theory with Marshak boundary conditions gives accurate results for an optically thin medium even for small values of 'c', the ratio of the scattering to the total cross section. Second, the effective value of 'c' at low energy becomes very close to one due to the down-scattering via collisions of high energy neutrals. The first reason is proven both computationally and theoretically by solving the transport equation in a power series in 'c' and the diffusion equation with 'general' Marshak boundary conditions. The second reason is established numerically by comparing the results from a one-dimensional, general geometry, multigroup diffusion theory code, written for this purpose, with the results obtained using the transport code ANISN

Optical characterization of niobium pentoxide thin films

International Nuclear Information System (INIS)

Pawlicka, A.

1996-01-01

Thin films of Nb 2 O 5 were obtained by sol-gel method using ultrasonic irradiation and deposited by dip-coating technique. After calcination at temperatures superior than 500 deg C these films (300 nm thick) were characterized by cyclic voltametry and cronoamperometry. The memory measurements, color efficiency, optical density as a function of wave number and applied potential were effectuated to determine their electrochromic properties. The study of electrochromic properties of these films shows that the insertion process of lithium is reversible and changes their coloration from transparent (T=80%) to dark blue (T=20%). (author)

Excitation of epsilon-near-zero resonance in ultra-thin indium tin oxide shell embedded nanostructured optical fiber.

Science.gov (United States)

Minn, Khant; Anopchenko, Aleksei; Yang, Jingyi; Lee, Ho Wai Howard

2018-02-05

We report a novel optical waveguide design of a hollow step index fiber modified with a thin layer of indium tin oxide (ITO). We show an excitation of highly confined waveguide mode in the proposed fiber near the wavelength where permittivity of ITO approaches zero. Due to the high field confinement within thin ITO shell inside the fiber, the epsilon-near-zero (ENZ) mode can be characterized by a peak in modal loss of the hybrid waveguide. Our results show that such in-fiber excitation of ENZ mode is due to the coupling of the guided core mode to the thin-film ENZ mode. We also show that the phase matching wavelength, where the coupling takes place, varies depending on the refractive index of the constituents inside the central bore of the fiber. These ENZ nanostructured optical fibers have many potential applications, for example, in ENZ nonlinear and magneto-optics, as in-fiber wavelength-dependent filters, and as subwavelength fluid channel for optical and bio-photonic sensing.

Reduction of etching damage in lead-zirconate-titanate thin films with inductively coupled plasma

International Nuclear Information System (INIS)

Lim, Kyu-Tae; Kim, Kyoung-Tae; Kim, Dong-Pyo; Kim, Chang-Il

2003-01-01

In this work, we etched lead-zirconate-titanate (PZT) films with various additive gases (O 2 and Ar) in Cl 2 /CF 4 plasmas, while mixing ratio was fixed at 8/2. After the etching, the plasma induced damages are characterized in terms of hysteresis curves, leakage current, retention properties, and switching polarization. When the electrical properties of PZT etched in O 2 or Ar added to Cl 2 /CF 4 were compared, the value of remanent polarization in O 2 added to Cl 2 /CF 4 plasma is higher than that in Ar added plasma. The maximum etch rate of the PZT thin films was 145 nm/min for 30% Ar added Cl 2 /CF 4 gas having mixing ratio of 8/2 and 110 nm/min for 10% O 2 added to that same gas mixture. In order to recover the ferroelectric properties of the PZT thin films after etching, we annealed the etched PZT thin films at 550 deg. C in an O 2 atmosphere for 10 min. From the hysteresis curves, leakage current, retention property, and switching polarization, the reduction of the etching damage and the recovery via the annealing turned out to be more effective when O 2 was added to Cl 2 /CF 4 than Ar. X-ray diffraction showed that the structural damage was lower when O 2 was added to Cl 2 /CF 4 and the improvement in the ferroelectric properties of the annealed samples was consistent with the increased intensities of the (100) and the (200) PZT peaks

Thickness dependent structural, optical and electrical properties of Se85In12Bi3 nanochalcogenide thin films

Science.gov (United States)

Tripathi, Ravi P.; Zulfequar, M.; Khan, Shamshad A.

2018-04-01

Our aim is to study the thickness dependent effects on structure, electrical and optical properties of Se85In12Bi3 nanochalcogenide thin films. Bulk alloy of Se85In12Bi3 was synthesized by melt-quenching technique. The amorphous as well as glassy nature of Se85In12Bi3 chalcogenide was confirmed by non-isothermal Differential Scanning Calorimetry (DSC) measurements. The nanochalcogenide thin films of thickness 30, 60 and 90 nm were prepared on glass/Si wafer substrate using Physical Vapour Condensation Technique (PVCT). From XRD studies it was found that thin films have amorphous texture. The surface morphology and particle size of films were studied by Field Emission Scanning Electron Microscope (FESEM). From optical studies, different optical parameters were estimated for Se85In12Bi3 thin films at different thickness. It was found that the absorption coefficient (α) and extinction coefficient (k) increases with photon energy and decreases with film thickness. The optical absorption process followed the rule of indirect transitions and optical band gap were found to be increase with film thickness. The value of Urbach energy (Et) and steepness parameter (σ) were also calculated for different film thickness. For electrical studies, dc-conductivity measurement was done at different temperature and activation energy (ΔEc) were determined and found to be increase with film thickness.

Optical pump-and-probe test system for thermal characterization of thin metal and phase-change films

International Nuclear Information System (INIS)

Watabe, Kazuo; Polynkin, Pavel; Mansuripur, Masud

2005-01-01

A single-shot optical pump-and-probe test system is reported. The system is designed for thermal characterization of thin-film samples that can change their phase state under the influence of a short and intense laser pulse on a subnanosecond time scale. In combination with numerical analysis, the system can be used to estimate thermal constants of thin films, such as specific heat and thermal conductivity. In-plane and out-of plane thermal conductivity can be estimated independently. The system is intended for use in research on optical data storage and material processing with pulsed laser light. The system design issues are discussed. As application examples, we report on using the system to study thermal dynamics in two different thin-film samples: a gold film on a glass substrate (a single-phase system) and the quadrilayer phase-change stack typical in optical data-storage applications

Radio-frequency oxygen-plasma-enhanced pulsed laser deposition of IGZO films

Directory of Open Access Journals (Sweden)

Chia-Man Chou

2017-07-01

Full Text Available We demonstrate the crystalline structures, optical transmittance, surface and cross-sectional morphologies, chemical compositions, and electrical properties of indium gallium zinc oxide (IGZO-based thin films deposited on glass and silicon substrates through pulsed laser deposition (PLD incorporated with radio-frequency (r.f.-generated oxygen plasma. The plasma-enhanced pulsed laser deposition (PEPLD-based IGZO thin films exhibited a c-axis-aligned crystalline (CAAC structure, which was attributed to the increase in Zn-O under high oxygen vapor pressure (150 mTorr. High oxygen vapor pressure (150 mTorr and low r.f. power (10 W are the optimal deposition conditions for fabricating IGZO thin films with improved electrical properties.

Characteristics of ITO films with oxygen plasma treatment for thin film solar cell applications

Energy Technology Data Exchange (ETDEWEB)

Park, Yong Seob [Department of Photoelectronics Information, Chosun College of Science and Technology, Gwangju (Korea, Republic of); Kim, Eungkwon [Digital Broadcasting Examination, Korean Intellectual Property Office, Daejeon, Suwon 440-746 (Korea, Republic of); Hong, Byungyou [School of Electronic and Electrical Engineering, Sungkyunkwan University, Cheoncheon-dong, 300, Jangan-gu, Suwon 440-746 (Korea, Republic of); Lee, Jaehyoeng, E-mail: jaehyeong@skku.edu [School of Electronic and Electrical Engineering, Sungkyunkwan University, Cheoncheon-dong, 300, Jangan-gu, Suwon 440-746 (Korea, Republic of)

2013-12-15

Graphical abstract: The effect of O{sub 2} plasma treatment on the surface and the work function of ITO films. - Highlights: • ITO films were prepared on the glass substrate by RF magnetron sputtering method. • Effects of O{sub 2} plasma treatment on the properties of ITO films were investigated. • The work function of ITO film was changed from 4.67 to 5.66 eV by plasma treatment. - Abstract: The influence of oxygen plasma treatment on the electro-optical and structural properties of indium-tin-oxide films deposited by radio frequency magnetron sputtering method were investigated. The films were exposed at different O{sub 2} plasma powers and for various durations by using the plasma enhanced chemical vapor deposition (PECVD) system. The resistivity of the ITO films was almost constant, regardless of the plasma treatment conditions. Although the optical transmittance of ITO films was little changed by the plasma power, the prolonged treatment slightly increased the transmittance. The work function of ITO film was changed from 4.67 eV to 5.66 eV at the plasma treatment conditions of 300 W and 60 min.

Structural, morphological and optical properties of Na and K dual doped CdS thin film

International Nuclear Information System (INIS)

Mageswari, S.; Dhivya, L.; Palanivel, Balan; Murugan, Ramaswamy

2012-01-01

Highlights: ► Effect of incorporation of Na, K and Na,K dual dopants into CdS thin film was investigated. ► Thin films were prepared by simple chemical bath deposition technique. ► The XRD analysis revealed cubic phase for all the investigated films. ► AFM analysis revealed uniform surface with crack free and densely packed morphology for CdS:Na,K film. ► The band gap value increases for CdS:Na, CdS:K and CdS:Na,K thin films compared to CdS film. - Abstract: CdS, sodium doped CdS (CdS:Na), potassium doped CdS (CdS:K) and sodium and potassium dual doped CdS (CdS:Na,K) thin films were deposited on glass substrate by chemical bath deposition (CBD) technique. Structural, morphological and optical properties of the as-grown films were characterised using X-ray diffraction (XRD), scanning electron microscopy (SEM), energy dispersive X-ray analysis (EDAX), atomic force microscopy (AFM) and ultraviolet visible (UV–VIS) spectroscopy. The XRD analysis revealed cubic phase for ‘as-deposited’ CdS, CdS:Na, CdS:K and CdS:Na,K dual doped thin films. AFM analysis revealed uniform film surface with crack free and densely packed morphology for CdS:Na,K film. The absorption edge in the optical absorption spectra shifts towards the shorter wavelength for CdS:Na, CdS:K and CdS:Na,K thin films compared to CdS film. The optical band gap of CdS, CdS:Na, CdS:K and CdS:Na,K thin films was found to be 2.31, 2.35, 2.38 and 2.34 eV, respectively.

Optical and electrical characterization of AgInS2 thin films deposited by spray pyrolysis

International Nuclear Information System (INIS)

Calixto-Rodriguez, M.; Martinez, H.; Calixto, M.E.; Pena, Y.; Martinez-Escobar, Dalia; Tiburcio-Silver, A.; Sanchez-Juarez, A.

2010-01-01

Silver indium sulfide (AgInS 2 ) thin films have been prepared by spray pyrolysis (SP) technique using silver acetate, indium acetate, and N, N-dimethylthiourea as precursor compounds. Films were deposited onto glass substrates at different substrate temperatures (T s ) and Ag:In:S ratios in the starting solutions. Optical transmission and reflection as well as electrical measurements were performed in order to study the effect of deposition parameters on the optical and electrical properties of AgInS 2 thin films. X-ray diffraction measurements were used to identify the deposited compounds. It was found that different compounds such as AgInS 2 , Ag 2 S, In 2 O 3 , and In 2 S 3 can be grown only by changing the Ag:In:S ratio in the starting solution and T s . So that, by carefully selecting the deposition parameters, single phase AgInS 2 thin films can be easily grown. Thin films obtained using a molar ratio of Ag:In:S = 1:1:2 and T s = 400 o C, have an optical band gap of 1.9 eV and n-type electrical conductivity with a value of 0.3 Ω -1 cm -1 in the dark.

Magneto-optical properties of BiFeO3 thin films using surface plasmon resonance technique

International Nuclear Information System (INIS)

Paliwal, Ayushi; Sharma, Anjali; Tomar, Monika; Gupta, Vinay

2014-01-01

Indigeneously assembled surface plasmon resonance (SPR) set up has been exploited to study the magnetic field dependent optical properties of BiFeO 3 thin films. BiFeO 3 thin films have been deposited onto gold (Au) coated glass prism by using pulsed laser deposition technique. The surface plasmon modes in prism/Au/BiFeO 3 /air structure have been excited in Kretschmann configuration at the interface of Au/BiFeO 3 thin films. The SPR reflectance curves obtained for prism/Au/BiFeO 3 /air structure were utilized to investigate the optical properties of BiFeO 3 thin films at optical frequency (λ=633 nm) as a function of applied magnetic field. SPR curves shows a continuous shift towards lower angles with increasing applied magnetic field, which indicate the promising application of ferromagnetic BiFeO 3 film as a magnetic field sensor. Complex dielectric constant of deposited BiFeO 3 film was determined by fitting the experimental SPR data with Fresnel's equations. The variation of complex dielectric constant and refractive index of BiFeO 3 film was studied with increase in magnetic field, and the sensitivity of magnetic field sensor was found to be about 0.52 RIU/T

Experimental studies of thorium ion implantation from pulse laser plasma into thin silicon oxide layers

Science.gov (United States)

Borisyuk, P. V.; Chubunova, E. V.; Lebedinskii, Yu Yu; Tkalya, E. V.; Vasilyev, O. S.; Yakovlev, V. P.; Strugovshchikov, E.; Mamedov, D.; Pishtshev, A.; Karazhanov, S. Zh

2018-05-01

We report the results of experimental studies related to implantation of thorium ions into thin silicon dioxide by pulsed plasma flux expansion. Thorium ions were generated by laser ablation from a metal target, and the ionic component of the laser plasma was accelerated in an electric field created by the potential difference (5, 10 and 15 kV) between the ablated target and a SiO2/Si (0 0 1) sample. The laser ablation system installed inside the vacuum chamber of the electron spectrometer was equipped with a YAG:Nd3  +  laser having a pulse energy of 100 mJ and time duration of 15 ns in the Q-switched regime. The depth profile of thorium atoms implanted into the 10 nm thick subsurface areas together with their chemical state as well as the band gap of the modified silicon oxide at different conditions of implantation processes were studied by means of x-ray photoelectron spectroscopy and reflected electron energy loss spectroscopy methods. Analysis of the chemical composition showed that the modified silicon oxide film contains complex thorium silicates. Depending on the local concentration of thorium atoms, the experimentally established band gaps were located in the range 6.0–9.0 eV. Theoretical studies of the optical properties of the SiO2 and ThO2 crystalline systems were performed by ab initio calculations within hybrid functional. The optical properties of the SiO2/ThO2 composite were interpreted on the basis of the Bruggeman effective medium approximation. A quantitative assessment of the yield of isomeric nuclei in ‘hot’ laser plasma at the early stages of expansion was performed. The estimates made with experimental results demonstrated that the laser implantation of thorium ions into the SiO2 matrix can be useful for further research of low-lying isomeric transitions in a 229Th isotope with energy of 7.8 +/- 0.5 eV.

Optical approach to thermopower and conductivity measurements in thin-film semiconductors

International Nuclear Information System (INIS)

Dersch, H.; Amer, N.M.

1984-01-01

An optical beam deflection technique is applied to measure the Joule and Peltier heat generated by electric currents through thin-film semiconductors. The method yields a spatially resolved conductivity profile and allows the determination of Peltier coefficients. Results obtained on doped hydrogenated amorphous silicon films are presented

Optical Properties and Surface Morphology of Nano-composite PMMA: TiO2 Thin Films

International Nuclear Information System (INIS)

Lyly Nyl Ismail; Ahmad Fairoz Aziz; Habibah Zulkefle

2011-01-01

There are two nano-composite PMMA: TiO 2 solutions were prepared in this research. First solution is nano-composite PMMA commercially available TiO 2 nanopowder and the second solution is nano-composite PMMA with self-prepared TiO 2 powder. The self-prepared TiO 2 powder is obtained by preparing the TiO 2 sol-gel. Solvo thermal method were used to dry the TiO 2 sol-gel and obtained TiO 2 crystal. Ball millers were used to grind the TiO 2 crystal in order to obtained nano sized powder. Triton-X was used as surfactant to stabilizer the composite between PMMA: TiO 2 . Besides comparing the nano-composite solution, we also studied the effect of the thin films thickness on the optical properties and surface morphology of the thin films. The thin films were deposited by sol-gel spin coating method on glass substrates. The optical properties and surface characterization were measured with UV-VIS spectrometer equipment and atomic force microscopy (AFM). The result showed that nano-composite PMMA with self prepared TiO 2 give high optical transparency than nano-composite PMMA with commercially available TiO 2 nano powder. The results also indicate as the thickness is increased the optical transparency are decreased. Both AFM images showed that the agglomerations of TiO 2 particles are occurred on the thin films and the surface roughness is increased when the thickness is increased. High agglomeration particles exist in the AFM images for nano-composite PMMA: TiO 2 with TiO 2 nano powder compare to the other nano-composite solution. (author)

Computational hydrodynamics and optical performance of inductively-coupled plasma adaptive lenses

Energy Technology Data Exchange (ETDEWEB)

Mortazavi, M.; Urzay, J., E-mail: jurzay@stanford.edu; Mani, A. [Center for Turbulence Research, Stanford University, Stanford, California 94305-3024 (United States)

2015-06-15

This study addresses the optical performance of a plasma adaptive lens for aero-optical applications by using both axisymmetric and three-dimensional numerical simulations. Plasma adaptive lenses are based on the effects of free electrons on the phase velocity of incident light, which, in theory, can be used as a phase-conjugation mechanism. A closed cylindrical chamber filled with Argon plasma is used as a model lens into which a beam of light is launched. The plasma is sustained by applying a radio-frequency electric current through a coil that envelops the chamber. Four different operating conditions, ranging from low to high powers and induction frequencies, are employed in the simulations. The numerical simulations reveal complex hydrodynamic phenomena related to buoyant and electromagnetic laminar transport, which generate, respectively, large recirculating cells and wall-normal compression stresses in the form of local stagnation-point flows. In the axisymmetric simulations, the plasma motion is coupled with near-wall axial striations in the electron-density field, some of which propagate in the form of low-frequency traveling disturbances adjacent to vortical quadrupoles that are reminiscent of Taylor-Görtler flow structures in centrifugally unstable flows. Although the refractive-index fields obtained from axisymmetric simulations lead to smooth beam wavefronts, they are found to be unstable to azimuthal disturbances in three of the four three-dimensional cases considered. The azimuthal striations are optically detrimental, since they produce high-order angular aberrations that account for most of the beam wavefront error. A fourth case is computed at high input power and high induction frequency, which displays the best optical properties among all the three-dimensional simulations considered. In particular, the increase in induction frequency prevents local thermalization and leads to an axisymmetric distribution of electrons even after introduction of

Structure and optical properties of thin As{sub 2}S{sub 3}-In{sub 2}S{sub 3} films

Energy Technology Data Exchange (ETDEWEB)

Todorov, R; Pirov, J; Petkov, K [Institute of Optical Materials and Technologies ' Acad. J. Malinowski' , Bulgarian Academy of Sciences, Acad. G. Bonchev Str., bl.109, 1113 Sofia (Bulgaria); Tsankov, D, E-mail: rossen@clf.bas.bg [Institute of Organic Chemistry with Centre of Phytochemistry, Bulgarian Academy of Sciences, Acad. G. Bonchev St. bl.9, 1113 Sofia (Bulgaria)

2011-08-03

This paper deals with the optical properties of thin As{sub 2}S{sub 3}-In{sub 2}S{sub 3} films. The thin layers were deposited by thermal co-evaporation of As{sub 2}S{sub 3} and In{sub 2}S{sub 3}. The composition of the coatings was controlled by x-ray microanalysis; it was found to be close to the expected one. The refractive index n and optical band gap E{sub g}{sup opt} were calculated from the transmittance and reflectance spectra. The results showed that the refractive index of thin As-S films is not affected by the addition of 1 at% indium and it increases from 2.46 to 2.58 for thin film with 13 at% In. A decrease in the changes in the refractive index, {Delta}n, after exposure to light or annealing with addition of indium in arsenic sulfide is observed. To explain the influence of the indium on the photoinduced changes in the optical properties of thin As-S-In films, the glass structure was investigated by infrared spectroscopy. The calculated values of the optical constants were compared with those obtained from ellipsometric measurements.

Infrared reflectance measurement for InN thin film characterization

International Nuclear Information System (INIS)

Fukui, K.; Kugumiya, Y.; Nakagawa, N.; Yamamoto, A.

2006-01-01

Infrared reflectance measurements of a series of InN thin films have been performed and attempt to derive carrier concentration and other physical constants for InN thin film characterization. Fitting calculations are performed by use of the dielectric function equation based on phonon-plasmon coupling model. Longitudinal and transverse optical phonon frequencies, plasma frequency and their damping parameters can be derived from fitting. From those results, electrical and phonon properties of InN and characterization of films are discussed. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Thermodynamic phase profiles of optically thin midlatitude cloud and their relation to temperature

Energy Technology Data Exchange (ETDEWEB)

Naud, C. M.; Del Genio, Anthony D.; Haeffelin, M.; Morille, Y.; Noel, V.; Dupont, Jean-Charles; Turner, David D.; Lo, Chaomei; Comstock, Jennifer M.

2010-06-03

Winter cloud phase and temperature profiles derived from ground-based lidar depolarization and radiosonde measurements are analyzed for two midlatitude locations: the United States Atmospheric Radiation Measurement Program Southern Great Plains (SGP) site and the Site Instrumental de Recherche par Télédétection Atmosphérique (SIRTA) in France. Because lidars are attenuated in optically thick clouds, the dataset only includes optically thin clouds (optical thickness < 3). At SGP, 57% of the clouds observed with the lidar in the temperature range 233-273 K are either completely liquid or completely glaciated, while at SIRTA only 42% of the observed clouds are single phase, based on a depolarization ratio threshold of 11% for differentiating liquid from ice. Most optically thin mixed phase clouds show an ice layer at cloud top, and clouds with liquid at cloud top are less frequent. The relationship between ice phase occurrence and temperature only slightly changes between cloud base and top. At both sites liquid is more prevalent at colder temperatures than has been found previously in aircraft flights through frontal clouds of greater optical thicknesses. Liquid in clouds persists to colder temperatures at SGP than SIRTA. This information on the average temperatures of mixed phase clouds at both locations complements earlier passive satellite remote sensing measurements that sample cloud phase near cloud top and for a wider range of cloud optical thicknesses.

Effect of cell thickness on the electrical and optical properties of thin film silicon solar cell

Science.gov (United States)

Zaki, A. A.; El-Amin, A. A.

2017-12-01

In this work Electrical and optical properties of silicon thin films with different thickness were measured. The thickness of the Si films varied from 100 to 800 μm. The optical properties of the cell were studied at different thickness. A maximum achievable current density (MACD) generated by a planar solar cell, was measured for different values of the cell thickness which was performed by using photovoltaic (PV) optics method. It was found that reducing the values of the cell thickness improves the open-circuit voltage (VOC) and the fill factor (FF) of the solar cell. The optical properties were measured for thin film Si (TF-Si) at different thickness by using the double beam UV-vis-NIR spectrophotometer in the wavelength range of 300-2000 nm. Some of optical parameters such as refractive index with dispersion relation, the dispersion energy, the oscillator energy, optical band gap energy were calculated by using the spectra for the TF-Si with different thickness.

The effect of CF4 addition on Ru etching with inductively coupled plasma

International Nuclear Information System (INIS)

Lim, Kyu Tae; Kim, Dong Pyo; Kim, Kyoung Tae; Kim, Chang Il

2003-01-01

Ru thin films were etched in CF 4 /O 2 plasma using an ICP (inductively coupled plasma etching) system. The etch rate of Ru thin films was examined as a function of gas mixing ratio. The maximum etch rate of Ru thin films was 168 nm/min at a CF 4 /O 2 gas mixing ratio of 10 %. The selectivity of Ru over SiO 2 was 1.3. From the OES (optical emission spectroscopy), the optical emission intensity of the O radical had a maximum value at 10 % of CF 4 gas concentration and decrease with further addition of CF 4 gas. From XPS (x-ray photoelectron spectroscopy) analysis, Ru-F bonds by the chemical reaction of Ru and F appeared in the surface of the etched Ru thin film in CF 4 /O 2 chemistry. RuF 3-4 compounds were suggested as a surface passivation layer that reduces the chemical reactions between Ru and O radicals. In a FE-SEM (field emission scanning electron microscope) micrograph, we had an almost perpendicular taper angle of 89 .deg.

Plasma interactions determine the composition in pulsed laser deposited thin films

Science.gov (United States)

Chen, Jikun; Döbeli, Max; Stender, Dieter; Conder, Kazimierz; Wokaun, Alexander; Schneider, Christof W.; Lippert, Thomas

2014-09-01

Plasma chemistry and scattering strongly affect the congruent, elemental transfer during pulsed laser deposition of target metal species in an oxygen atmosphere. Studying the plasma properties of La0.6Sr0.4MnO3, we demonstrate for as grown La0.6Sr0.4MnO3-δ films that a congruent transfer of metallic species is achieved in two pressure windows: ˜10-3 mbar and ˜2 × 10-1 mbar. In the intermediate pressure range, La0.6Sr0.4MnO3-δ becomes cation deficient and simultaneously almost fully stoichiometric in oxygen. Important for thin film growth is the presence of negative atomic oxygen and under which conditions positive metal-oxygen ions are created in the plasma. This insight into the plasma chemistry shows why the pressure window to obtain films with a desired composition and crystalline structure is narrow and requires a careful adjustment of the process parameters.

Structural and optical analysis of 60Co gamma-irradiated thin films of polycrystalline Ga10Se85Sn5

Science.gov (United States)

Ahmad, Shabir; Asokan, K.; Shahid Khan, Mohd.; Zulfequar, M.

2015-12-01

The present study focuses on the effects of gamma irradiation on structural and optical properties of polycrystalline Ga10Se85Sn5 thin films with a thickness of ∼300 nm deposited by the thermal evaporation technique on cleaned glass substrates. X-ray diffraction patterns of the investigated thin films show that crystallite growth occurs in the orthorhombic phase structure. The surface study carried out by using the scanning electron microscope (SEM) confirms that the grain size increases with gamma irradiation. The optical parameters were estimated from optical transmission spectra data measured from a UV-vis-spectrophotometer in the wavelength range of 200-1100 nm. The refractive index dispersion data of the investigated thin films follow the single oscillator model. The estimated values of static refractive index n0, oscillator strength Ed, zero frequency dielectric constant ε0, optical conductivity σoptical and the dissipation factor increases after irradiation, while the single oscillator energy Eo decreases after irradiation. It was found that the value of the optical band gap of the investigated thin films decreases and the corresponding absorption coefficient increases continuously with an increase in the dose of gamma irradiation. This post irradiation changes in the values of optical band gap and absorption coefficient were interpreted in terms of the bond distribution model.

Optical and magneto-optical characterization of TbFeCo and GdFeCo thin films for high-density recording

International Nuclear Information System (INIS)

Hendren, W R; Atkinson, R; Pollard, R J; Salter, I W; Wright, C D; Clegg, W W; Jenkins, D F L

2003-01-01

Thin, optically semi-infinite films of amorphous TbFeCo and GdFeCo, suitable for magneto-optical recording, have been deposited by DC magnetron sputtering onto glass. Ellipsometric techniques have been used to determine the complex refractive index and complex magneto-optical parameter of the films in the wavelength range 400-900 nm, thus characterizing the materials. A review of the literature is presented and shows that the results for the TbFeCo films compare favourably with published results obtained from measurements conducted in situ, with the films protected with ZnS barrier layers. It is found that GdFeCo and TbFeCo are optically very similar, but magneto-optically the materials are quite different

Optical and magneto-optical characterization of TbFeCo and GdFeCo thin films for high-density recording

Energy Technology Data Exchange (ETDEWEB)

Hendren, W R [Department of Pure and Applied Physics, Queen' s University Belfast, Belfast BT7 1NN (United Kingdom); Atkinson, R [Department of Pure and Applied Physics, Queen' s University Belfast, Belfast BT7 1NN (United Kingdom); Pollard, R J [Department of Pure and Applied Physics, Queen' s University Belfast, Belfast BT7 1NN (United Kingdom); Salter, I W [Department of Pure and Applied Physics, Queen' s University Belfast, Belfast BT7 1NN (United Kingdom); Wright, C D [School of Engineering and Computer Science, University of Exeter, Exeter EX4 4QF (United Kingdom); Clegg, W W [CRIST, University of Plymouth, Plymouth PL4 8AA (United Kingdom); Jenkins, D F L [CRIST, University of Plymouth, Plymouth PL4 8AA (United Kingdom)

2003-03-12

Thin, optically semi-infinite films of amorphous TbFeCo and GdFeCo, suitable for magneto-optical recording, have been deposited by DC magnetron sputtering onto glass. Ellipsometric techniques have been used to determine the complex refractive index and complex magneto-optical parameter of the films in the wavelength range 400-900 nm, thus characterizing the materials. A review of the literature is presented and shows that the results for the TbFeCo films compare favourably with published results obtained from measurements conducted in situ, with the films protected with ZnS barrier layers. It is found that GdFeCo and TbFeCo are optically very similar, but magneto-optically the materials are quite different.

Optical properties of the plasma hydrogenated ZnO thin films

Czech Academy of Sciences Publication Activity Database

Chang, Yu-Ying; Stuchlík, Jiří; Neykova, Neda; Souček, J.; Remeš, Zdeněk

2017-01-01

Roč. 68, č. 7 (2017), s. 70-73 ISSN 1335-3632 R&D Projects: GA ČR GC16-10429J Institutional support: RVO:68378271 Keywords : metal oxide * magnetron sputtering * thin films * reflectance interferometry * photothermal deflection spectroscopy Subject RIV: BM - Solid Matter Physics ; Magnetism OBOR OECD: Condensed matter physics (including formerly solid state physics, supercond.) Impact factor: 0.483, year: 2016

Amine Enrichment of Thin-Film Composite Membranes via Low Pressure Plasma Polymerization for Antimicrobial Adhesion.

Science.gov (United States)

Reis, Rackel; Dumée, Ludovic F; He, Li; She, Fenghua; Orbell, John D; Winther-Jensen, Bjorn; Duke, Mikel C

2015-07-15

Thin-film composite membranes, primarily based on poly(amide) (PA) semipermeable materials, are nowadays the dominant technology used in pressure driven water desalination systems. Despite offering superior water permeation and salt selectivity, their surface properties, such as their charge and roughness, cannot be extensively tuned due to the intrinsic fabrication process of the membranes by interfacial polymerization. The alteration of these properties would lead to a better control of the materials surface zeta potential, which is critical to finely tune selectivity and enhance the membrane materials stability when exposed to complex industrial waste streams. Low pressure plasma was employed to introduce amine functionalities onto the PA surface of commercially available thin-film composite (TFC) membranes. Morphological changes after plasma polymerization were analyzed by SEM and AFM, and average surface roughness decreased by 29%. Amine enrichment provided isoelectric point changes from pH 3.7 to 5.2 for 5 to 15 min of plasma polymerization time. Synchrotron FTIR mappings of the amine-modified surface indicated the addition of a discrete 60 nm film to the PA layer. Furthermore, metal affinity was confirmed by the enhanced binding of silver to the modified surface, supported by an increased antimicrobial functionality with demonstrable elimination of E. coli growth. Essential salt rejection was shown minimally compromised for faster polymerization processes. Plasma polymerization is therefore a viable route to producing functional amine enriched thin-film composite PA membrane surfaces.

Optical and structural properties of natural MnSeO{sub 4} mineral thin film

Energy Technology Data Exchange (ETDEWEB)

Kariper, Ishak Afsin, E-mail: akariper@gmail.com [Erciyes University, Education Faculty, Kayseri (Turkey)

2017-05-15

Manganese selenite (MnSeO{sub 4}) crystalline thin film has been produced with chemical bath deposition on substrates (commercial glass). Properties of the thin film, such as transmittance, absorption, and optical band gap and refraction index have been investigated via UV/VIS Spectrum. The structural properties of orthorhombic form have been observed in XRD. The structural and optical properties of MnSeO{sub 4} thin films, deposited at different pH levels were analyzed. Some properties of the films have been changed with the change of pH level, which has been deeply investigated. The grain size of MnSeO{sub 4} thin film has reached its highest value at pH 9. The refraction index and extinction coefficient of MnSeO{sub 4} thin films were measured to be 1.53, 2.86, 2.07, 1.53 (refraction index) and 0.005, 0.029, 0.014, 0.005 (extinction coefficient) for grain sizes 21, 13, 26, and 5 nm respectively. The band gaps (Eg) of the films were measured to be 2.06, 2.57, 2.04, and 2.76 eV for the grain sizes mentioned above. The value of dielectric constant at pH 10 was calculated as 1.575. (author)

Optical, mechanical and surface properties of amorphous carbonaceous thin films obtained by plasma enhanced chemical vapor deposition and plasma immersion ion implantation and deposition

Science.gov (United States)

Turri, Rafael G.; Santos, Ricardo M.; Rangel, Elidiane C.; da Cruz, Nilson C.; Bortoleto, José R. R.; Dias da Silva, José H.; Antonio, César Augusto; Durrant, Steven F.

2013-09-01

Diverse amorphous hydrogenated carbon-based films (a-C:H, a-C:H:F, a-C:H:N, a-C:H:Cl and a-C:H:Si:O) were obtained by radiofrequency plasma enhanced chemical vapor deposition (PECVD) and plasma immersion ion implantation and deposition (PIIID). The same precursors were used in the production of each pair of each type of film, such as a-C:H, using both PECVD and PIIID. Optical properties, namely the refractive index, n, absorption coefficient, α, and optical gap, ETauc, of these films were obtained via transmission spectra in the ultraviolet-visible near-infrared range (wavelengths from 300 to 3300 nm). Film hardness, elastic modulus and stiffness were obtained as a function of depth using nano-indentation. Surface energy values were calculated from liquid drop contact angle data. Film roughness and morphology were assessed using atomic force microscopy (AFM). The PIIID films were usually thinner and possessed higher refractive indices than the PECVD films. Determined refractive indices are consistent with literature values for similar types of films. Values of ETauc were increased in the PIIID films compared to the PECVD films. An exception was the a-C:H:Si:O films, for which that obtained by PIIID was thicker and exhibited a decreased ETauc. The mechanical properties - hardness, elastic modulus and stiffness - of films produced by PECVD and PIIID generally present small differences. An interesting effect is the increase in the hardness of a-C:H:Cl films from 1.0 to 3.0 GPa when ion implantation is employed. Surface energy correlates well with surface roughness. The implanted films are usually smoother than those obtained by PECVD.

Optical, mechanical and surface properties of amorphous carbonaceous thin films obtained by plasma enhanced chemical vapor deposition and plasma immersion ion implantation and deposition

International Nuclear Information System (INIS)

Turri, Rafael G.; Santos, Ricardo M.; Rangel, Elidiane C.; Cruz, Nilson C. da; Bortoleto, José R.R.; Dias da Silva, José H.; Antonio, César Augusto; Durrant, Steven F.

2013-01-01

Diverse amorphous hydrogenated carbon-based films (a-C:H, a-C:H:F, a-C:H:N, a-C:H:Cl and a-C:H:Si:O) were obtained by radiofrequency plasma enhanced chemical vapor deposition (PECVD) and plasma immersion ion implantation and deposition (PIIID). The same precursors were used in the production of each pair of each type of film, such as a-C:H, using both PECVD and PIIID. Optical properties, namely the refractive index, n, absorption coefficient, α, and optical gap, E Tauc , of these films were obtained via transmission spectra in the ultraviolet–visible near-infrared range (wavelengths from 300 to 3300 nm). Film hardness, elastic modulus and stiffness were obtained as a function of depth using nano-indentation. Surface energy values were calculated from liquid drop contact angle data. Film roughness and morphology were assessed using atomic force microscopy (AFM). The PIIID films were usually thinner and possessed higher refractive indices than the PECVD films. Determined refractive indices are consistent with literature values for similar types of films. Values of E Tauc were increased in the PIIID films compared to the PECVD films. An exception was the a-C:H:Si:O films, for which that obtained by PIIID was thicker and exhibited a decreased E Tauc . The mechanical properties – hardness, elastic modulus and stiffness – of films produced by PECVD and PIIID generally present small differences. An interesting effect is the increase in the hardness of a-C:H:Cl films from 1.0 to 3.0 GPa when ion implantation is employed. Surface energy correlates well with surface roughness. The implanted films are usually smoother than those obtained by PECVD.

Optical properties of n-CdSe sub 1-x Te sub x polycrystalline thin films

Energy Technology Data Exchange (ETDEWEB)

Gutierrez, M T [Centro de Investigaciones Energeticas, Medioambientales y Tecnologicas, Madrid (Spain). Inst. de Energias Renovables

1991-01-01

Absorption coefficient, {alpha}({lambda}), and energy gap, E{sub g}, of CdSe{sub 1-x}Te{sub x} thin films were determined from the measured transmittance and reflectance at normal incidence of light in the wavelength range 450-2500 nm. The thin film were electrochemically prepared on glass plates coated with conducting thin films of SnO{sub 2}. A combined method from Goodman and Lubberts was used to determine the absorption coefficient and its dependence on the wavelength. The evolution of the optical gap versus the composition of Te in CdSe{sub 1-x}Te{sub x} was made and a value of 1.4 eV of the optical gap was obtained for the composition of CdSe{sub 0.65}Te{sub 0.35}. (orig.).

Optical response of thin amorphous films to infrared radiation

Science.gov (United States)

Orosco, J.; Coimbra, C. F. M.

2018-03-01

We briefly review the electrical-optical response of materials to radiative forcing within the formalism of the Kramers-Kronig relations. A commensurate set of criteria is described that must be met by any frequency-domain model representing the time-domain response of a real (i.e., physically possible) material. The criteria are applied to the Brendel-Bormann (BB) oscillator, a model that was originally introduced for its fidelity at reproducing the non-Lorentzian peak broadening experimentally observed in the infrared absorption by thin amorphous films but has since been used for many other common materials. We show that the BB model fails to satisfy the established physical criteria. Taking an alternative approach to the model derivation, a physically consistent model is proposed. This model provides the appropriate line-shape broadening for modeling the infrared optical response of thin amorphous films while adhering strictly to the Kramers-Kronig criteria. Experimental data for amorphous alumina (Al2O3 ) and amorphous quartz silica (SiO2) are used to obtain model parametrizations for both the noncausal BB model and the proposed causal model. The proposed model satisfies consistency criteria required by the underlying physics and reproduces the experimental data with better fidelity (and often with fewer parameters) than previously proposed permittivity models.

Optical spectroscopy of laser-produced plasmas for standoff isotopic analysis

Science.gov (United States)

Harilal, S. S.; Brumfield, B. E.; LaHaye, N. L.; Hartig, K. C.; Phillips, M. C.

2018-06-01

Rapid, in-field, and non-contact isotopic analysis of solid materials is extremely important to a large number of applications, such as nuclear nonproliferation monitoring and forensics, geochemistry, archaeology, and biochemistry. Presently, isotopic measurements for these and many other fields are performed in laboratory settings. Rapid, in-field, and non-contact isotopic analysis of solid material is possible with optical spectroscopy tools when combined with laser ablation. Laser ablation generates a transient vapor of any solid material when a powerful laser interacts with a sample of interest. Analysis of atoms, ions, and molecules in a laser-produced plasma using optical spectroscopy tools can provide isotopic information with the advantages of real-time analysis, standoff capability, and no sample preparation requirement. Both emission and absorption spectroscopy methods can be used for isotopic analysis of solid materials. However, applying optical spectroscopy to the measurement of isotope ratios from solid materials presents numerous challenges. Isotope shifts arise primarily due to variation in nuclear charge distribution caused by different numbers of neutrons, but the small proportional nuclear mass differences between nuclei of various isotopes lead to correspondingly small differences in optical transition wavelengths. Along with this, various line broadening mechanisms in laser-produced plasmas and instrumental broadening generated by the detection system are technical challenges frequently encountered with emission-based optical diagnostics. These challenges can be overcome by measuring the isotope shifts associated with the vibronic emission bands from molecules or by using the techniques of laser-based absorption/fluorescence spectroscopy to marginalize the effect of instrumental broadening. Absorption and fluorescence spectroscopy probe the ground state atoms existing in the plasma when it is cooler, which inherently provides narrower

Application of complex geometrical optics to determination of thermal, transport, and optical parameters of thin films by the photothermal beam deflection technique.

Science.gov (United States)

Korte, Dorota; Franko, Mladen

2015-01-01

In this work, complex geometrical optics is, for what we believe is the first time, applied instead of geometrical or wave optics to describe the probe beam interaction with the field of the thermal wave in photothermal beam deflection (photothermal deflection spectroscopy) experiments on thin films. On the basis of this approach the thermal (thermal diffusivity and conductivity), optical (energy band gap), and transport (carrier lifetime) parameters of the semiconductor thin films (pure TiO2, N- and C-doped TiO2, or TiO2/SiO2 composites deposited on a glass or aluminum support) were determined with better accuracy and simultaneously during one measurement. The results are in good agreement with results obtained by the use of other methods and reported in the literature.

Participation of the Third Order Optical Nonlinearities in Nanostructured Silver Doped Zinc Oxide Thin Solid Films

Directory of Open Access Journals (Sweden)

C. Torres-Torres

2012-01-01

Full Text Available We report the transmittance modulation of optical signals in a nanocomposite integrated by two different silver doped zinc oxide thin solid films. An ultrasonic spray pyrolysis approach was employed for the preparation of the samples. Measurements of the third-order nonlinear optical response at a nonresonant 532 nm wavelength of excitation were performed using a vectorial two-wave mixing. It seems that the separated contribution of the optical nonlinearity associated with each film noticeable differs in the resulting nonlinear effects with respect to the additive response exhibited by the bilayer system. An enhancement of the optical Kerr nonlinearity is predicted for prime number arrays of the studied nanoclusters in a two-wave interaction. We consider that the nanostructured morphology of the thin solid films originates a strong modification of the third-order optical phenomena exhibited by multilayer films based on zinc oxide.

Preparation, characterization and optical properties of Gadolinium doped ceria thin films by pulsed laser deposition technique

International Nuclear Information System (INIS)

Nagaraju, P.; Vijaya Kumar, Y.; Vishnuvardhan Reddy, C.; Ramana Reddy, M.V.; Phase, D.M; Raghavendra Reddy, V.

2013-01-01

The growth of Gadolinium doped ceria thin films with controlled surface structure for device quality applications presents a significant problem for experimental investigation. In the present study gadolinium doped cerium oxide thin films were prepared by pulsed laser deposition (PLD) and were studied for their surface structure evaluation in relation to the optimized operating conditions during the stage of film preparation. The deposition was made with gadolinium concentration of 10 mole% to ceria pellets. The films were deposited on quartz substrate in the presence of oxygen partial pressure of 1.5 x 10 -3 torr using KrF Excimer laser with laser energy 220 mJ at a substrate temperature 700℃. The effect of annealing temperature on 10 mole% GDC thin film was investigated. The film thickness was measured by using AMBIOS make XP-l stylus profiler. As prepared and annealed thin films were characterized for crystallinity, particle size and orientation by using G.I.XRD. The films were characterized using atomic force microscopy (AFM). The AFM results gave a consistent picture of the evolution of GDC film surface morphologies and microstructures in terms of surface roughness, grain distribution and mean grain size. The optical transmittance spectra was used to determine the optical constants such as optical band gap, refractive index, extinction coefficient of as prepared and annealed thin films. (author)

Thermo-optic characteristic of DNA thin solid film and its application as a biocompatible optical fiber temperature sensor.

Science.gov (United States)

Hong, Seongjin; Jung, Woohyun; Nazari, Tavakol; Song, Sanggwon; Kim, Taeoh; Quan, Chai; Oh, Kyunghwan

2017-05-15

We report unique thermo-optical characteristics of DNA-Cetyl tri-methyl ammonium (DNA-CTMA) thin solid film with a large negative thermo-optical coefficient of -3.4×10-4/°C in the temperature range from 20°C to 70°C without any observable thermal hysteresis. By combining this thermo-optic DNA film and fiber optic multimode interference (MMI) device, we experimentally demonstrated a highly sensitive compact temperature sensor with a large spectral shift of 0.15 nm/°C. The fiber optic MMI device was a concatenated structure with single-mode fiber (SMF)-coreless silica fiber (CSF)-single mode fiber (SMF) and the DNA-CTMA film was deposited on the CSF. The spectral shifts of the device in experiments were compared with the beam propagation method, which showed a good agreement.

Room temperature synthesis of porous SiO2 thin films by plasma enhanced chemical vapor deposition

OpenAIRE

Barranco Quero, Ángel; Cotrino Bautista, José; Yubero Valencia, Francisco; Espinós, J. P.; Rodríguez González-Elipe, Agustín

2004-01-01

Synthesis of porous SiO2 thin films in room temperature was carried out using plasma enhanced chemical vapor deposition (CVD) in an electron cyclotron resonance microwave reactor with a downstream configuration.The gas adsorption properties and the type of porosity of the SiO2 thin films were assessed by adsorption isotherms of toluene at room temperature.The method could also permit the tailoring synthesis of thin films when both composition and porosity can be simultaneously and independent...

Optical and electrical properties of TiOPc doped Alq{sub 3} thin films

Energy Technology Data Exchange (ETDEWEB)

Ramar, M.; Suman, C. K., E-mail: sumanck@nplindia.org; Tyagi, Priyanka; Srivastava, R. [CSIR-Network of Institutes for Solar Energy CSIR - National Physical Laboratory, Dr. K. S. Krishnan Marg, New Delhi -110012 (India)

2015-06-24

The Titanyl phthalocyanine (TiOPc) was doped in Tris (8-hydroxyquinolinato) aluminum (Alq3) with different concentration. The thin film of optimized doping concentration was studied extensively for optical and electrical properties. The optical properties, studied using ellipsometry, absorption and photoluminescence. The absorption peak of Alq{sub 3} and TiOPc was observed at 387 nm and 707 nm and the photo-luminescence intensity (PL) peak of doped thin film was observed at 517 nm. The DC and AC electrical properties of the thin film were studied by current density-voltage (J-V) characteristics and impedance over a frequency range of 100 Hz - 1 MHz. The electron mobility calculated from trap-free space-charge limited region (SCLC) is 0.17×10{sup −5} cm{sup 2}/Vs. The Cole-Cole plots shows that the TiOPc doped Alq{sub 3} thin film can be represented by a single parallel resistance R{sub P} and capacitance C{sub P} network with a series resistance R{sub S} (10 Ω). The value of R{sub P} and C{sub P} at zero bias was 1587 Ω and 2.568 nF respectively. The resistance R{sub P} decreases with applied bias whereas the capacitance C{sub P} remains almost constant.

Thin film shape memory alloys for optical sensing applications

International Nuclear Information System (INIS)

Fu, Y Q; Luo, J K; Huang, W M; Flewitt, A J; Milne, W I

2007-01-01

Based on shape memory effect of the sputtered thin film shape memory alloys, different types of micromirror structures were designed and fabricated for optical sensing application. Using surface micromachining, TiNi membrane mirror structure has been fabricated, which can be actuated based on intrinsic two-way shape memory effect of the free-standing TiNi film. Using bulk micromachining, TiNi/Si and TiNi/Si 3 N 4 microcantilever mirror structures were fabricated

Optical Properties of Al- and Sb-Doped CdTe Thin Films

Directory of Open Access Journals (Sweden)

A. A. J. Al-Douri

2010-01-01

Full Text Available Nondoped and (Al, Sb-doped CdTe thin films with 0.5, 1.5, and 2.5  wt.%, respectively, were deposited by thermal evaporation technique under vacuum onto Corning 7059 glass at substrate temperatures ( of room temperature (RT and 423 K. The optical properties of deposited CdTe films such as band gap, refractive index (n, extinction coefficient (, and dielectric coefficients were investigated as function of Al and Sb wt.% doping, respectively. The results showed that films have direct optical transition. Increasing and the wt.% of both types of dopant, the band gap decrease but the optical is constant as n, and real and imaginary parts of the dielectric coefficient increase.

Optical coherence tomography detection of characteristic retinal nerve fiber layer thinning in nasal hypoplasia of the optic disc.

Science.gov (United States)

Haruta, M; Kodama, R; Yamakawa, R

2017-12-01

PurposeTo determine the clinical usefulness of optical coherence tomography (OCT) for detecting thinning of the retinal nerve fiber layer (RNFL) in eyes with nasal hypoplasia of the optic discs (NHOD).Patients and methodsThe medical records of five patients (eight eyes) with NHOD were reviewed. The ratio of the disc-macula distance to the disc diameter (DM/DD) and the disc ovality ratio of the minimal to maximal DD were assessed using fundus photographs. The RNFL thicknesses of the temporal, superior, nasal, and inferior quadrants were evaluated using OCT quadrant maps.ResultsAll eight eyes had temporal visual field defects that respected the vertical meridians that needed to be differentiated from those related to chiasmal compression. The mean DM/DD ratio was 3.1 and the mean disc ovality ratio was 0.81. The mean RNFL thicknesses of the temporal, superior, nasal, and inferior quadrants were 90.3, 103.1, 34.8, and 112.8 microns, respectively.ConclusionSmall optic discs and tilted discs might be associated with NHOD. Measurement of the RNFL thickness around the optic disc using OCT scans clearly visualized the characteristic RNFL thinning of the nasal quadrants corresponding to the temporal sector visual field defects in eyes with NHOD. OCT confirmed the presence of NHOD and might differentiate eyes with NHOD from those with chiasmal compression.

Raman scattering, electrical and optical properties of fluorine-doped tin oxide thin films with (200) and (301) preferred orientation

Energy Technology Data Exchange (ETDEWEB)

Kim, Chang-Yeoul, E-mail: cykim15@kicet.re.kr [Nano-Convergence Intelligence Material Team, Korea Institute of Ceramic Eng. and Tech., Gasan-digtial-ro 10 Gil 77 Geumcheon-gu, 153-801 Seoul (Korea, Republic of); Riu, Doh-Hyung [Dept. of New Material Sci. and Eng., Seoul National University of Technology, Seoul (Korea, Republic of)

2014-12-15

(200) and (301) preferred oriented fluorine-doped tin oxide (FTO) thin films were fabricated by spray pyrolysis of ethanol-added and water-based FTO precursor solutions, respectively. (200) oriented FTO thin film from ethanol-added solution shows the lower electrical resistivity and visible light transmission than (301) preferred thin film from water-based solution. It is due to the higher carrier concentration and electron mobility in (200) oriented crystals, that is, the lower ionized impurity scattering. The higher electron concentration is related to the higher optical band gap energy, the lower visible light transmission, and the higher IR reflection. For (301) preferred FTO thin films from water-based solution, the lower carrier concentration and electron mobility make the higher electrical resistivity and visible light transmission. Raman scattering analysis shows that IR active modes prominent in (200) oriented FTO thin film are related with the lower electrical resistivity. - Highlights: • We coated fluorine-doped tin oxide thin films with preferred orientation of (200) and (301). • We examine changes in the level of electrical and optical properties with the orientation. • (200) preferred orientation showed lower electrical resistivity and optical transmittance. • (200) oriented thin films have higher electron concentrations that are related with IR active modes.

Research of precise pulse plasma arc powder welding technology of thin-walled inner hole parts

Institute of Scientific and Technical Information of China (English)

Li Zhanming; Du Xiaokun; Sun Xiaofeng; Song Wei

2017-01-01

The inner hole parts played an oriented or supporting role in engineering machinery and equipment,which are prone to appear surface damages such as wear,strain and corrosion.The precise pulse plasma arc powder welding method is used for surface damage repairing of inner hole parts in this paper.The working principle and process of the technology are illustrated,and the microstructure and property of repairing layer by precise pulse plasma powder welding and CO2 gas shielded welding are tested and observed by microscope,micro hardness tester and X-ray residual stress tester etc.Results showed that the substrate deformation of thin-walled inner hole parts samples by precise pulse plasma powder welding is relatively small.The repair layer and substrate is metallurgical bonding,the transition zones (including fusion zone and heat affected zone) are relatively narrow and the welding quality is good.h showed that the thin-walled inner hole parts can be repaired by this technology and equipment.

Study of optical properties of vacuum evaporated carbon nanotube containing Se80Te16Cu4 thin films

Science.gov (United States)

Upadhyay, A. N.; Tiwari, R. S.; Singh, Kedar

2016-08-01

Thin films of Se80Te16Cu4 glassy alloy and 3 wt.% of carbon nanotubes (CNTs) containing Se80Te16Cu4 glassy composite were deposited on clean glass substrate by thermal evaporation technique. The scanning electron microscope and energy dispersive x-ray analysis were performed to investigate the surface morphology and elemental composition of as synthesised samples. The reflectance and transmittance spectra of as-deposited thin films were recorded (200-1100 nm) by using UV/VIS/NIR spectrophotometer. The optical band gap and optical constants such as absorption coefficient (α), refractive index (n) and extinction coefficient (k) of Se80Te16Cu4 and 3 wt.% CNTs-Se80Te16Cu4 glassy composite thin films were calculated. It is observed that optical properties alter due to CNTs incorporation in Se80Te16Cu4 glassy alloy. Effect on optical properties due to CNTs incorporation can be explained in terms of concentration of unsaturated bonds/defects in the localised states.

Application of Thin ZnO ALD Layers in Fiber-Optic Fabry-Pérot Sensing Interferometers

Directory of Open Access Journals (Sweden)

Daria Majchrowicz

2016-03-01

Full Text Available In this paper we investigated the response of a fiber-optic Fabry-Pérot sensing interferometer with thin ZnO layers deposited on the end faces of the optical fibers forming the cavity. Standard telecommunication single-mode optical fiber (SMF-28 segments were used with the thin ZnO layers deposited by Atomic Layer Deposition (ALD. Measurements were performed with the interferometer illuminated by two broadband sources operating at 1300 nm and 1550 nm. Reflected interference signal was acquired by an optical spectrum analyzer while the length of the air cavity was varied. Thickness of the ZnO layers used in the experiments was 50 nm, 100 nm, and 200 nm. Uncoated SMF-28 fiber was also used as a reference. Based on the results of measurements, the thickness of the ZnO layers and the length of the cavity were selected in order to achieve good visibility. Following, the interferometer was used to determine the refractive index of selected liquids.

Ultralow field emission from thinned, open-ended, and defected carbon nanotubes by using microwave hydrogen plasma processing

Energy Technology Data Exchange (ETDEWEB)

Deng, Jian-Hua, E-mail: jhdeng1983@163.com [College of Physics and Materials Science, Tianjin Normal University, Tianjin 300387 (China); Cheng, Lin; Wang, Fan-Jie; Yu, Bin; Li, Guo-Zheng; Li, De-Jun [College of Physics and Materials Science, Tianjin Normal University, Tianjin 300387 (China); Cheng, Guo-An [Key Laboratory of Beam Technology and Material Modification of Ministry of Education, Beijing Normal University, Beijing 100875 (China)

2015-01-01

Graphical abstract: Thinned, open-ended, and defected carbon nanotubes were prepared by using hydrogen plasma processing. The processed carbon nanotubes have far better field emission performance than that of the pristine ones. - Highlights: • CVD prepared CNT arrays were processed by microwave hydrogen plasma. • Thinned, open-ended, and defected CNTs were obtained. • Processed CNTs have far better field emission performance than the pristine ones. • Processed CNTs have applicable emission stability after being perfectly aged. - Abstract: Ultralow field emission is achieved from carbon nanotubes (CNTs) by using microwave hydrogen plasma processing. After the processing, typical capped CNT tips are removed, with thinned, open-ended, and defected CNTs left. Structural analyses indicate that the processed CNTs have more SP{sup 3}-hybridized defects as compared to the pristine ones. The morphology of CNTs can be readily controlled by adjusting microwave powers, which change the shape of CNTs by means of hydrogen plasma etching. Processed CNTs with optimal morphology are found to have an ultralow turn-on field of 0.566 V/μm and threshold field of 0.896 V/μm, much better than 0.948 and 1.559 V/μm of the as-grown CNTs, respectively. This improved FE performance is ascribed to the structural changes of CNTs after the processing. The thinned and open-ended shape of CNTs can facilitate electron tunneling through barriers and additionally, the increased defects at tube walls can serve as new active emission sites. Furthermore, our plasma processed CNTs exhibit excellent field emission stability at a large emission current density of 10.36 mA/cm{sup 2} after being perfectly aged, showing promising prospects in applications as high-performance vacuum electron sources.

Metal-Organic Framework Thin Film Coated Optical Fiber Sensors: A Novel Waveguide-Based Chemical Sensing Platform.

Science.gov (United States)

Kim, Ki-Joong; Lu, Ping; Culp, Jeffrey T; Ohodnicki, Paul R

2018-02-23

Integration of optical fiber with sensitive thin films offers great potential for the realization of novel chemical sensing platforms. In this study, we present a simple design strategy and high performance of nanoporous metal-organic framework (MOF) based optical gas sensors, which enables detection of a wide range of concentrations of small molecules based upon extremely small differences in refractive indices as a function of analyte adsorption within the MOF framework. Thin and compact MOF films can be uniformly formed and tightly bound on the surface of etched optical fiber through a simple solution method which is critical for manufacturability of MOF-based sensor devices. The resulting sensors show high sensitivity/selectivity to CO 2 gas relative to other small gases (H 2 , N 2 , O 2 , and CO) with rapid (optical fiber platform which results in an amplification of inherent optical absorption present within the MOF-based sensing layer with increasing values of effective refractive index associated with adsorption of gases.

THE STABILITY OF OPTICALLY THIN REACTING PLASMAS: EFFECTS OF THE BULK VISCOSITY

International Nuclear Information System (INIS)

Ibanez S, Miguel H.

2009-01-01

The thermochemical stability of reacting plasmas is analyzed by taking into account the change in the thermodynamical equilibrium values during the fluctuation. This shift in the equilibrium produces two main effects: a change in the four instability criteria for reacting gases resulting when the above effect is neglected and adds a fifth instability criterion due to the fact that the corresponding secular equation becomes a fifth-order polynomial. The above results are applied to several plasma models, in particular, to a photoionized hydrogen plasma for which the bulk viscosity can be more important than the dynamic viscosity and the thermometric conductivity. Therefore, the bulk viscosity may quench thermochemical instabilities were the thermal conduction is unable of stabilizing. This occurs for low values of the photoionizing energy E. The implications of the above results in explaining the formation of clump structures in different regions of the interstellar medium are outlined.

Fabrication of bright and thin Zn₂SiO₄ luminescent film for electron beam excitation-assisted optical microscope.

Science.gov (United States)

Furukawa, Taichi; Kanamori, Satoshi; Fukuta, Masahiro; Nawa, Yasunori; Kominami, Hiroko; Nakanishi, Yoichiro; Sugita, Atsushi; Inami, Wataru; Kawata, Yoshimasa

2015-07-13

We fabricated a bright and thin Zn₂SiO₄ luminescent film to serve as a nanometric light source for high-spatial-resolution optical microscopy based on electron beam excitation. The Zn₂SiO₄ luminescent thin film was fabricated by annealing a ZnO film on a Si₃N₄ substrate at 1000 °C in N₂. The annealed film emitted bright cathodoluminescence compared with the as-deposited film. The film is promising for nano-imaging with electron beam excitation-assisted optical microscopy. We evaluated the spatial resolution of a microscope developed using this Zn₂SiO₄ luminescent thin film. This is the first report of the investigation and application of ZnO/Si₃N₄ annealed at a high temperature (1000 °C). The fabricated Zn₂SiO₄ film is expected to enable high-frame-rate dynamic observation with ultra-high resolution using our electron beam excitation-assisted optical microscopy.

An investigation on linear and non-linear optical constants of nano-spherical CuPc thin films for optoelectronic applications

Energy Technology Data Exchange (ETDEWEB)

Yahia, I.S. [Nano-Science & Semiconductor Labs, Metallurgical Lab., Department of Physics, Faculty of Education, Ain Shams University, Roxy, Cairo (Egypt); Advanced Functional Materials & Optoelectronic Laboratory (AFMOL), Department of Physics, Faculty of Science, King Khalid University, P.O. Box 9004, Abha (Saudi Arabia); Ganesh, V. [Advanced Functional Materials & Optoelectronic Laboratory (AFMOL), Department of Physics, Faculty of Science, King Khalid University, P.O. Box 9004, Abha (Saudi Arabia); Shkir, M., E-mail: shkirphysics@gmail.com [Advanced Functional Materials & Optoelectronic Laboratory (AFMOL), Department of Physics, Faculty of Science, King Khalid University, P.O. Box 9004, Abha (Saudi Arabia); AlFaify, S. [Advanced Functional Materials & Optoelectronic Laboratory (AFMOL), Department of Physics, Faculty of Science, King Khalid University, P.O. Box 9004, Abha (Saudi Arabia); Zahran, H.Y. [Nano-Science & Semiconductor Labs, Metallurgical Lab., Department of Physics, Faculty of Education, Ain Shams University, Roxy, Cairo (Egypt); Advanced Functional Materials & Optoelectronic Laboratory (AFMOL), Department of Physics, Faculty of Science, King Khalid University, P.O. Box 9004, Abha (Saudi Arabia); Algarni, H. [Advanced Functional Materials & Optoelectronic Laboratory (AFMOL), Department of Physics, Faculty of Science, King Khalid University, P.O. Box 9004, Abha (Saudi Arabia); Abutalib, M.M.; Al-Ghamdi, Attieh A. [Centre of Nanotechnology, Physics Department-Faculty of Science-AL Faisaliah Campus, King Abdulaziz University, Jeddah (Saudi Arabia); El-Naggar, A.M.; AlBassam, A.M. [Research Chair of Exploitation of Renewable Energy Applications in Saudi Arabia, Physics & Astronomy Dept., College of Science, King Saud University, P.O. Box 2455, Riyadh 11451 (Saudi Arabia)

2016-09-01

In the current work, the authors present the systematic study on linear and nonlinear optical properties of Copper-phathalocyanine thin film deposited by thermal evaporation system for the first time. The thickness of the prepared thin film was measured and found to be ~300 nm. X-ray diffraction and AFM study confirms that the prepared thin film possess good quality. The orientation of the grown thin film is found to be along (100). UV–vis-NIR study shows that the deposited thin film is highly transparent (>80%) in the wavelength range of 700–2500 nm. Further, the recorded optical data was used to determine the various linear and nonlinear optical parameters. The calculated value of refractive index is found to be in the range of 0.4–1.0. The direct and indirect band gap value is found to be 2.9 and 3.25 eV, respectively. The value of linear and nonlinear susceptibilities is found to be in order of 10{sup −12}. The higher value of linear and nonlinear parameters makes it suitable for optoelectronic applications.

An investigation on linear and non-linear optical constants of nano-spherical CuPc thin films for optoelectronic applications

Science.gov (United States)

Yahia, I. S.; Ganesh, V.; Shkir, M.; AlFaify, S.; Zahran, H. Y.; Algarni, H.; Abutalib, M. M.; Al-Ghamdi, Attieh A.; El-Naggar, A. M.; AlBassam, A. M.

2016-09-01

In the current work, the authors present the systematic study on linear and nonlinear optical properties of Copper-phathalocyanine thin film deposited by thermal evaporation system for the first time. The thickness of the prepared thin film was measured and found to be ~300 nm. X-ray diffraction and AFM study confirms that the prepared thin film possess good quality. The orientation of the grown thin film is found to be along (100). UV-vis-NIR study shows that the deposited thin film is highly transparent (>80%) in the wavelength range of 700-2500 nm. Further, the recorded optical data was used to determine the various linear and nonlinear optical parameters. The calculated value of refractive index is found to be in the range of 0.4-1.0. The direct and indirect band gap value is found to be 2.9 and 3.25 eV, respectively. The value of linear and nonlinear susceptibilities is found to be in order of 10-12. The higher value of linear and nonlinear parameters makes it suitable for optoelectronic applications.

Structural and optical properties of furfurylidenemalononitrile thin films

Science.gov (United States)

Ali, H. A. M.

2013-03-01

Thin films of furfurylidenemalononitrile (FMN) were deposited on different substrates at room temperature by thermal evaporation technique under a high vacuum. The structure of the powder was confirmed by Fourier transformation infrared (FTIR) technique. The unit cell dimensions were determined from X-ray diffraction (XRD) studies. The optical properties were investigated using spectrophotometric measurements of the transmittance and reflectance at normal incidence of light in the wavelength range from 200 to 2500 nm. The refractive index (n), the absorption index (k) and the absorption coefficient (α) were calculated. The analysis of the spectral behavior of the absorption coefficient in the absorption region revealed an indirect allowed transition. The refractive index dispersion was analyzed using the single oscillator model. Some dispersion parameters were estimated. Complex dielectric function and optical conductivity were determined. The influence of the irradiation with high-energy X-rays (6 MeV) on the studied properties was also investigated.

On the Mechanism of In Nanoparticle Formation by Exposing ITO Thin Films to Hydrogen Plasmas.

Science.gov (United States)

Fan, Zheng; Maurice, Jean-Luc; Chen, Wanghua; Guilet, Stéphane; Cambril, Edmond; Lafosse, Xavier; Couraud, Laurent; Merghem, Kamel; Yu, Linwei; Bouchoule, Sophie; Roca I Cabarrocas, Pere

2017-10-31

We present our systematic work on the in situ generation of In nanoparticles (NPs) from the reduction of ITO thin films by hydrogen (H 2 ) plasma exposure. In contrast to NP deposition from the vapor phase (i.e., evaporation), the ITO surface can be considered to be a solid reservoir of In atoms thanks to H 2 plasma reduction. On one hand, below the In melting temperature, solid In NP formation is governed by the island-growth mode, which is a self-limiting process because the H 2 plasma/ITO interaction will be gradually eliminated by the growing In NPs that cover the ITO surface. On the other hand, we show that above the melting temperature In droplets prefer to grow along the grain boundaries on the ITO surface and dramatic coalescence occurs when the growing NPs connect with each other. This growth-connection-coalescence behavior is even strengthened on In/ITO bilayers, where In particles larger than 10 μm can be formed, which are made of evaporated In atoms and in situ released ones. Thanks to this understanding, we manage to disperse dense evaporated In NPs under H 2 plasma exposure when inserting an ITO layer between them and substrate like c-Si wafer or glass by modifying the substrate surface chemistry. Further studies are needed for more precise control of this self-assembling method. We expect that our findings are not limited to ITO thin films but could be applicable to various metal NPs generation from the corresponding metal oxide thin films.

An optical trap for relativistic plasma

International Nuclear Information System (INIS)

Zhang Ping; Saleh, Ned; Chen Shouyuan; Sheng Zhengming; Umstadter, Donald

2003-01-01

The first optical trap capable of confining relativistic electrons, with kinetic energy ≤350 keV was created by the interference of spatially and temporally overlapping terawatt power, 400 fs duration laser pulses (≤2.4x10 18 W/cm 2 ) in plasma. Analysis and computer simulation predicted that the plasma density was greatly modulated, reaching a peak density up to 10 times the background density (n e /n 0 ∼10) at the interference minima. Associated with this charge displacement, a direct-current electrostatic field of strength of ∼2x10 11 eV/m was excited. These predictions were confirmed experimentally by Thomson and Raman scattering diagnostics. Also confirmed were predictions that the electron density grating acted as a multi-layer mirror to transfer energy between the crossed laser beams, resulting in the power of the weaker laser beam being nearly 50% increased. Furthermore, it was predicted that the optical trap acted to heat electrons, increasing their temperature by two orders of magnitude. The experimental results showed that the number of high energy electrons accelerated along the direction of one of the laser beams was enhanced by a factor of 3 and electron temperature was increased ∼100 keV as compared with single-beam illumination

Nonlinear optical properties of poly(methyl methacrylate) thin films doped with Bixa Orellana dye

Energy Technology Data Exchange (ETDEWEB)

Zongo, S., E-mail: sidiki@tlabs.ac.za [UNESCO-UNISA Africa Chair in Nanosciences/Nanotechnology, College of Graduate Studies, University of South Africa, Muckleneuk ridge, POBox 392, Pretoria (South Africa); Nanosciences African Network (NANOAFNET), iThemba LABS-National Research Foundation, 1 OldFaure road, Somerset West 7129, POBox 722, Somerset West, Western Cape Province (South Africa); Kerasidou, A.P. [LUNAM Université, Université d’Angers, CNRS UMR 6200, Laboratoire MOLTECH-Anjou, 2 Bd Lavoisier, 49045 Angers Cedex (France); Sone, B.T.; Diallo, A. [UNESCO-UNISA Africa Chair in Nanosciences/Nanotechnology, College of Graduate Studies, University of South Africa, Muckleneuk ridge, POBox 392, Pretoria (South Africa); Nanosciences African Network (NANOAFNET), iThemba LABS-National Research Foundation, 1 OldFaure road, Somerset West 7129, POBox 722, Somerset West, Western Cape Province (South Africa); Mthunzi, P. [Council for Scientific and Industrial Research, P O Box 395, Pretoria 0001 (South Africa); Iliopoulos, K. [LUNAM Université, Université d’Angers, CNRS UMR 6200, Laboratoire MOLTECH-Anjou, 2 Bd Lavoisier, 49045 Angers Cedex (France); Institute of Chemical Engineering Sciences, Foundation for Research and Technology Hellas (FORTH/ICE-HT), 26504 Patras (Greece); Nkosi, M. [Nanosciences African Network (NANOAFNET), iThemba LABS-National Research Foundation, 1 OldFaure road, Somerset West 7129, POBox 722, Somerset West, Western Cape Province (South Africa); and others

2015-06-15

Highlights: • We studied the linear and nonlinear optical properties of hybrid Bixa Orellana dye doped PMMA thin film. • We investigated the linear optical properties by means of UV/Vis, FTIR and Fluorescence. • We used Tauc - Lorentz model to evaluate linear optical parameters (n &k) with relative maximum of 1.456 at 508.5, 523.79 and 511.9 nm for n is observed while the maximum of k varies from 0.070 to 0.080. • We evaluated nonlinear third order susceptibility which was found to be 1.00 × 10{sup −21} m{sup 2} V{sup −2} or 0.72 × 10{sup −13} esu. - Abstract: Natural dyes with highly delocalized π-electron systems are considered as promising organic materials for nonlinear optical applications. Among these dyes, Bixa Orellana dye with extended π-electron delocalization is one of the most attractive dyes. Bixa Orellana dye-doped Poly(methyl methacrylate) (PMMA) thin films were prepared through spin coating process for linear and nonlinear optical properties investigation. Atomic force microscopy (AFM) was used to evaluate the roughness of the thin films. The optical constants n and k were evaluated by ellipsometric spectroscopy. The refractive index had a maximum of about 1.456 at 508.5, 523.79 and 511.9 nm, while the maximum of k varies from 0.070 to 0.080 with the thickness. The third order nonlinear optical properties of the hybrid Bixa Orellana dye-PMMA polymer were investigated under 30 ps laser irradiation at 1064 nm with a repetition rate of 10 Hz. In particular the third-order nonlinear susceptibility has been determined by means of the Maker Fringes technique. The nonlinear third order susceptibility was found to be 1.00 × 10{sup −21} m{sup 2} V{sup −2} or 0.72 × 10{sup −13} esu. Our studies provide concrete evidence that the hybrid-PMMA composites of Bixa dye are prospective candidates for nonlinear material applications.

Electronic excitation induced modifications of optical and morphological properties of PCBM thin films

Energy Technology Data Exchange (ETDEWEB)

Sharma, T. [Department of Physics and Materials Research Centre, Malaviya National Institute of Technology, Jaipur 302017 (India); Singhal, R., E-mail: rsinghal.phy@mnit.ac.in [Department of Physics and Materials Research Centre, Malaviya National Institute of Technology, Jaipur 302017 (India); Vishnoi, R. [Department of Physics and Materials Research Centre, Malaviya National Institute of Technology, Jaipur 302017 (India); Department of Physics, Vardhman (P.G.) College, Bijnor 246701, U.P. (India); Sharma, P. [Department of Physics and Materials Research Centre, Malaviya National Institute of Technology, Jaipur 302017 (India); Patra, A.; Chand, S. [National Physical Laboratory, Dr. K. S. Krishnan Marg, New Delhi 110012 (India); Lakshmi, G.B.V.S. [Inter University Accelerator Centre, Post Box No. 10502, New Delhi 110067 (India); Biswas, S.K. [Department of Metallurgical and Materials Engineering, Malaviya National Institute of Technology, Jaipur 302017 (India)

2016-07-15

Highlights: • Spin casted PCBM thin films are irradiated by 90 MeV Ni{sup 7+} ion beam. • The decrease in band gap was found after irradiation. • There is a decomposition of molecular bond due to ion irradiation. • Roughness is also found to be dependent on incident ion fluence. - Abstract: Phenyl C{sub 61} butyric acid methyl ester (PCBM) is a fullerene derivative and most commonly used in organic photovoltaic devices both as electron acceptor and transporting material due to high electron mobility. PCBM is easy to spin caste on some substrate as it is soluble in chlorobenzene. In this study, the spin coated thin films of PCBM (on two different substrate, glass and double sided silicon) were irradiated using 90 MeV Ni{sup 7+} swift heavy ion beam at low fluences ranging from 1 × 10{sup 9} to 1 × 10{sup 11} ions/cm{sup 2} to study the effect of ion beam irradiation. The pristine and irradiated PCBM thin films were characterized by UV–visible absorption spectroscopy and fourier transform infrared spectroscopy (FTIR) to investigate the optical properties before and after irradiation. These thin films were further analyzed using atomic force microscopy (AFM) to investigate the morphological modifications which are induced by energetic ions. The variation in optical band gap after irradiation was measured using Tauc’s relation from UV–visible absorption spectra. A considerable change was observed with increasing fluence in optical band gap of irradiated thin films of PCBM with respect to the pristine film. The decrease in FTIR band intensity of C{sub 60} cage reveals the polymerization reaction due to high energy ion impact. The roughness is also found to be dependent on incident fluences. This study throws light for the application of PCBM in organic solar cells in form of ion irradiation induced nanowires of PCBM for efficient charge carrier transportation in active layer.

Hard TiCx/SiC/a-C:H nanocomposite thin films using pulsed high energy density plasma focus device