WorldWideScience

Sample records for optically thin plasma

  1. The optical properties of plasma polymerized polyaniline thin films

    Energy Technology Data Exchange (ETDEWEB)

    Goktas, Hilal, E-mail: hilal_goktas@yahoo.com [Canakkale Onsekiz Mart University, Physics Department, 17020 Canakkale (Turkey); Demircioglu, Zahide; Sel, Kivanc [Canakkale Onsekiz Mart University, Physics Department, 17020 Canakkale (Turkey); Gunes, Taylan [Yalova University, Energy Systems Engineering Department, 77100 Yalova (Turkey); Kaya, Ismet [Canakkale Onsekiz Mart University, Chemistry Department, 17020 Canakkale (Turkey)

    2013-12-02

    We report herein the characterizations of polyaniline thin films synthesized using double discharge plasma system. Quartz glass substrates were coated at a pressure of 80 Pa, 19.0 kV pulsed and 1.5 kV dc potential. The substrates were located at different regions in the reactor to evaluate the influence of the position on the morphological and molecular structure of the obtained thin films. The molecular structure of the thin films was investigated by Fourier transform infrared (FTIR) and UV–visible photospectrometers (UV–vis), and the morphological studies were carried out by scanning electron microscope. The FTIR and UV–vis data revealed that the molecular structures of the synthesized thin films were in the form of leuocoemeraldine and exhibited similar structures with the films produced via chemical or electrochemical methods. The optical energy band gap values of the as-grown samples ranged from 2.5 to 3.1 eV, which indicated that these materials have potential applications in semiconductor devices. The refractive index in the transparent region (from 650 to 1000 nm) steadily decreased from 1.9 to 1.4 and the extinction coefficient was found to be on order of 10{sup −4}. The synthesized thin films showed various degrees of granular morphologies depending on the location of the substrate in the reactor. - Highlights: • Polyaniline thin films were synthesized for the first time via double discharge plasma system. • The films have similar structure to that of the chemically synthesized films. • The morphology of the films could be tuned by this technique. • These materials would have potential applications at semiconductor devices.

  2. On the approximation of the optically thin layer in plasma spectroscopy

    International Nuclear Information System (INIS)

    Preobrazhensky, N.G.

    1975-01-01

    Recent studies are described of criteria for the optically thin approximation relevant to more reliable interpretation of various plasma spectroscopic measurements. Non-equilibrium situations are in the focus of attention. Applicability of well-known criteria suggested by McWhirter and Hearn is outlined. (Auth.)

  3. Updated Collisional Ionization Equilibrium Calculated for Optically Thin Plasmas

    Science.gov (United States)

    Savin, Daniel Wolf; Bryans, P.; Badnell, N. R.; Gorczyca, T. W.; Laming, J. M.; Mitthumsiri, W.

    2010-03-01

    Reliably interpreting spectra from electron-ionized cosmic plasmas requires accurate ionization balance calculations for the plasma in question. However, much of the atomic data needed for these calculations have not been generated using modern theoretical methods and their reliability are often highly suspect. We have carried out state-of-the-art calculations of dielectronic recombination (DR) rate coefficients for the hydrogenic through Na-like ions of all elements from He to Zn as well as for Al-like to Ar-like ions of Fe. We have also carried out state-of-the-art radiative recombination (RR) rate coefficient calculations for the bare through Na-like ions of all elements from H to Zn. Using our data and the recommended electron impact ionization data of Dere (2007), we present improved collisional ionization equilibrium calculations (Bryans et al. 2006, 2009). We compare our calculated fractional ionic abundances using these data with those presented by Mazzotta et al. (1998) for all elements from H to Ni. This work is supported in part by the NASA APRA and SHP SR&T programs.

  4. Morphological, elemental, and optical characterization of plasma polymerized n-butyl methacrylate thin films

    Science.gov (United States)

    Nasrin, Rahima; Hossain, Khandker S.; Bhuiyan, A. H.

    2018-05-01

    Plasma polymerized n-butyl methacrylate (PPnBMA) thin films of varying thicknesses were prepared at room temperature by AC plasma polymerization system using a capacitively coupled parallel plate reactor. Field-emission scanning electron microscopy (FESEM), atomic force microscopy (AFM), energy-dispersive X-ray (EDX) analysis, and ultraviolet-visible (UV-Vis) spectroscopic investigation have been performed to study the morphological, elemental, and optical properties of the PPnBMA thin films, respectively. The flat and defect-free nature of thin films were confirmed by FESEM and AFM images. With declining plasma power, average roughness and root mean square roughness increase. Allowed direct transition ( E gd) and indirect transition ( E gi) energy gaps were found to be 3.64-3.80 and 3.38-3.45 eV, respectively, for PPnBMA thin films of different thicknesses. Values of E gd as well as E gi increase with the increase of thickness. The extinction coefficient, Urbach energy, and steepness parameter were also determined for these thin films.

  5. Characterisation by optical spectroscopy of a plasma of depositions of thins layers

    International Nuclear Information System (INIS)

    Chouan, Yannick

    1984-01-01

    This research thesis reports a work which, by correlating emission and absorption spectroscopic measurements with properties of deposited thin layers, aimed at being a complement to works undertaken by a team in charge of the realisation of a flat screen. In a first part, the author reports the study of a cathodic pulverisation of a silicon target. He describes the experimental set-up, presents correlations obtained between plasma electric properties (target self-polarisation voltage), emission spectroscopic measurements (line profile and intensity) and absorption spectroscopic measurements (density of metastables), and the composition of deposited thin layers for two reactive pulverisation plasmas (Ar-H_2 and Ar-CH_4). The second part addresses the relationship between experimental conditions and spectroscopic characteristics (emission and absorption lines, excitation and rotation temperature) of a He-SiH_4 plasma. The author also determined the most adapted spectroscopic measurements to the 'control' of deposition, and which result in an optimisation of electronic properties and of the deposition rate for the hydrogenated amorphous silicon. The third part reports the characterisation of depositions. Electric and optic measurements are reported. Then, for both deposition techniques, the author relates the influence of experimental conditions to deposition properties and to spectroscopic diagnosis. The author finally presents static characteristics of a thin-layer-based transistor

  6. Interpretation of the electron cyclotron emission of hot ASDEX upgrade plasmas at optically thin frequencies

    Energy Technology Data Exchange (ETDEWEB)

    Denk, Severin Sebastian; Stroth, Ulrich [Max-Planck-Institut fuer Plasmaphysik, D-85748 Garching (Germany); Physik-Department E28, Technische Universitaet Muenchen, 85748 Garching (Germany); Fischer, Rainer; Poli, Emanuele; Willensdorfer, Matthias; Maj, Omar; Stober, Joerg; Suttrop, Wolfgang [Max-Planck-Institut fuer Plasmaphysik, D-85748 Garching (Germany); Collaboration: The ASDEX Upgrade Team

    2016-07-01

    The electron cyclotron emission diagnostic (ECE) provides routinely electron temperature (T{sub e}) measurements. ''Kinetic effects'' (relativistic mass shift and Doppler shift) can cause the measured radiation temperatures (T{sub rad}) to differ from T{sub e} at cold resonance position complicating the determination of T{sub e} from the measured radiation temperature profile (T{sub rad}). For the interpretation of such ECE measurements an electron cyclotron forward model solving the radiation transport equation for given T{sub e} and electron density profiles is in use in the framework of Integrated Data Analysis at ASDEX Upgrade. While the original model lead to improved T{sub e} profiles near the plasma edge in moderately hot H-mode discharges, vacuum approximations in the model lead to inaccuracies given large T{sub e}. In hot plasmas ''wave-plasma interaction'', i.e. the dielectric effect of the background plasma onto the electron cyclotron emission, becomes important at optical thin measured frequencies. Additionally, given moderate electron densities and large T{sub e}, the refraction of the line of sight has to be considered for the interpretation of ECE measurements with low optical depth.

  7. Spectral evolution of soft x-ray emission from optically thin, high electron temperature platinum plasmas

    Directory of Open Access Journals (Sweden)

    Hiroyuki Hara

    2017-08-01

    Full Text Available The soft x-ray spectra of heavy element plasmas are frequently dominated by unresolved transition array (UTA emission. We describe the spectral evolution of an intense UTA under optically thin conditions in platinum plasmas. The UTA was observed to have a peak wavelength around 4.6 nm at line-of-sight averaged electron temperatures less than 1.4 keV at electron densities of (2.5–7.5 × 1013 cm−3. The UTA spectral structure was due to emission from 4d–4f transitions in highly charged ions with average charge states of q = 20–40. A numerical simulation successfully reproduced the observed spectral behavior.

  8. Electron cyclotron emission from optically thin plasma in compact helical system

    International Nuclear Information System (INIS)

    Idei, Hiroshi; Kubo, Shin; Hosokawa, Minoru; Iguchi, Harukazu; Ohkubo, Kunizo; Sato, Teruyuki.

    1994-01-01

    A frequency spectrum of second harmonic electron cyclotron emission was observed for an optically thin plasma produced by fundamental electron cyclotron heating in a compact helical system. A radial electron temperature profile deduced from this spectrum neglecting the multiple reflections effect shows a clear difference from that measured by Thomson scattering. We relate the spectrum with the electron temperature profile by the modified emission model including the scrambling effect. The scrambling effect results from both mode conversion and change in the trajectory due to multiple reflections of the emitting ray at the vessel wall. The difference between the two temperature profiles is explained well by using the modified emission model. Reconstruction of the electron temperature profile from the spectrum using this model is also discussed. (author)

  9. Effect of calcination environments and plasma treatment on structural, optical and electrical properties of FTO transparent thin films

    Directory of Open Access Journals (Sweden)

    Madhav Kafle

    2017-07-01

    Full Text Available The dependence of the structural, optical and electrical properties of the FTO thin films on the film thickness (276 nm - 546 nm, calcination environment, and low temperature plasma treatment were examined. The FTO thin films, prepared by spray pyrolysis, were calcinated under air followed by either further heat treatment under N2 gas or treatment in low temperature atmospheric plasma. The samples before and after calcination under N2, and plasma treatment will be represented by Sair, SN2 and SPl, respectively, hereafter. The thin films were characterized by measuring the XRD spectra, SEM images, optical transmittance and reflectance, and sheet resistance of the films before and after calcination in N2 environment or plasma treatment. The presence of sharp and narrow multiple peaks in XRD spectra hint us that the films were highly crystalline (polycrystalline. The samples Sair with the thickness of 471 nm showed as high as 92 % transmittance in the visible range. Moreover, from the tauc plot, the optical bandgap Eg values of the Sair found to be noticeably lower than that of the samples SN2. Very surprisingly, the electrical sheet resistance (Rsh found to decrease following the trend as Rshair > RshN2 > RshPl. The samples exposed to plasma found to possess the lowest RshPl (for film with thickness 546 nm, the RshPl was 17 Ω/sq..

  10. Heat treatment and aging effect on the structural and optical properties of plasma polymerized 2,6-diethylaniline thin films

    International Nuclear Information System (INIS)

    Matin, Rummana; Bhuiyan, A.H.

    2012-01-01

    The monomer, 2,6-diethylaniline has been used to deposit plasma polymerized 2,6-diethylaniline (PPDEA) thin films at room temperature on to glass substrates by a capacitively coupled parallel plate glow discharge reactor. A comparative analysis on the changes of morphological, structural and optical properties of as-deposited, heat treated and aged PPDEA thin films is ascertained. Scanning electron microscopy shows uniform and pinhole free surface of PPDEA thin films and no significant difference in the surface morphology is observed due to heat treatment. Electron dispersive X-ray and Fourier transform infrared spectroscopic investigations indicate some structural rearrangement in PPDEA thin films due to heat treatment. Differential thermal analysis, thermogravimetric analysis and differential thermogravimetric analysis suggest that the PPDEA is thermally stable up to about 580 K. The study on the optical absorption spectra of as-deposited, heat treated and aged PPDEA thin films of different thicknesses lead to the determination of the allowed direct and indirect transition energies ranging from 3.63 to 2.73 and 2.38 to 1.26 eV respectively. Urbach energy, steepness parameter and extinction coefficient are also assessed. It is observed that the optical parameters of as-deposited PPDEA thin films change due to heat treatment and do not change appreciably due to aging. - Highlights: ► Heat treatment and aging effect of plasma polymerized 2,6-diethylaniline thin films. ► The surface morphology of PPDEA is found uniform for all types of sample. ► Heat treatment introduces some elemental and structural rearrangement. ► The thermal stability is found up to about 580 K. ► Optical parameters were changed for heat treatment but not markedly for aging.

  11. Influence of the radio-frequency power on the physical and optical properties of plasma polymerized cyclohexane thin films

    Energy Technology Data Exchange (ETDEWEB)

    Manaa, C., E-mail: chadlia.el.manaa@gmail.com [Laboratoire de Physique de la Matière Condensée, Université de Picardie Jules Verne, UFR des Sciences d' Amiens, 33 rue Saint Leu, 80039 Amiens CEDEX 2 (France); Laboratoire des Matériaux Avancés et Phénomènes Quantiques, Université de Tunis El-Manar, Faculté des Sciences de Tunis, Campus universitaire El-Manar, 1068 Tunis (Tunisia); Lejeune, M. [Laboratoire de Physique de la Matière Condensée, Université de Picardie Jules Verne, UFR des Sciences d' Amiens, 33 rue Saint Leu, 80039 Amiens CEDEX 2 (France); Kouki, F. [Laboratoire des Matériaux Avancés et Phénomènes Quantiques, Université de Tunis El-Manar, Faculté des Sciences de Tunis, Campus universitaire El-Manar, 1068 Tunis (Tunisia); Durand-Drouhin, O. [Laboratoire de Physique de la Matière Condensée, Université de Picardie Jules Verne, UFR des Sciences d' Amiens, 33 rue Saint Leu, 80039 Amiens CEDEX 2 (France); Bouchriha, H. [Laboratoire des Matériaux Avancés et Phénomènes Quantiques, Université de Tunis El-Manar, Faculté des Sciences de Tunis, Campus universitaire El-Manar, 1068 Tunis (Tunisia); and others

    2014-06-02

    We investigate in the present study the effects of the radio-frequency plasma power on the opto-electronical properties of the polymeric amorphous hydrogenated carbon thin films deposited at room temperature and different radio-frequency powers by plasma-enhanced chemical vapor deposition method using cyclohexane as precursor. A combination of U.V.–Visible and infrared transmission measurements is applied to characterize the bonding and electronic properties of these films. Some film properties namely surface roughness, contact angle, surface energy, and optical properties are found to be significantly influenced by the radio-frequency power. The changes in these properties are analyzed within the microstructural modifications occurring during growth. - Highlights: • Effects of the radio-frequency power on the optoelectronic properties of thin films • Elaboration of plasma polymerized thin films using cyclohexane as precursor gas • The use of U.V.–Visible-infrared transmission, and optical gap • Study of the surface topography of the films by using Atomic Force microscopy • The use of a capacitively coupled plasma enhanced chemical vapor deposition method.

  12. Influence of the radio-frequency power on the physical and optical properties of plasma polymerized cyclohexane thin films

    International Nuclear Information System (INIS)

    Manaa, C.; Lejeune, M.; Kouki, F.; Durand-Drouhin, O.; Bouchriha, H.

    2014-01-01

    We investigate in the present study the effects of the radio-frequency plasma power on the opto-electronical properties of the polymeric amorphous hydrogenated carbon thin films deposited at room temperature and different radio-frequency powers by plasma-enhanced chemical vapor deposition method using cyclohexane as precursor. A combination of U.V.–Visible and infrared transmission measurements is applied to characterize the bonding and electronic properties of these films. Some film properties namely surface roughness, contact angle, surface energy, and optical properties are found to be significantly influenced by the radio-frequency power. The changes in these properties are analyzed within the microstructural modifications occurring during growth. - Highlights: • Effects of the radio-frequency power on the optoelectronic properties of thin films • Elaboration of plasma polymerized thin films using cyclohexane as precursor gas • The use of U.V.–Visible-infrared transmission, and optical gap • Study of the surface topography of the films by using Atomic Force microscopy • The use of a capacitively coupled plasma enhanced chemical vapor deposition method

  13. Nanostructure and optical properties of CeO{sub 2} thin films obtained by plasma-enhanced chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Barreca, D.; Bruno, G.; Gasparotto, A.; Losurdo, M.; Tondello, E

    2003-12-15

    In the present study, Spectroscopic Ellipsometry (SE) is used to investigate the interrelations between nanostructure and optical properties of CeO{sub 2} thin films deposited by Plasma-Enhanced Chemical Vapor Deposition (PE-CVD). The layers were synthesized in Ar and Ar-O{sub 2} plasmas on Si(100) substrates at temperatures lower than 300 deg. C. Both the real and imaginary parts of the complex dielectric functions and, subsequently, the optical constants of the films are derived up to 6.0 eV photon energy. Particular attention is devoted to the influence of synthesis conditions and sample properties on the optical response, taking into account the effects of surface roughness and SiO{sub 2} interface layer on Si.

  14. Ion irradiation as a tool for modifying the surface and optical properties of plasma polymerised thin films

    Energy Technology Data Exchange (ETDEWEB)

    Grant, Daniel S. [College of Science, Technology and Engineering, James Cook University, Townsville, Queensland 4811 (Australia); Bazaka, Kateryna [College of Science, Technology and Engineering, James Cook University, Townsville, Queensland 4811 (Australia); School of Chemistry, Physics, and Mechanical Engineering, Queensland University of Technology, Brisbane, Queensland 4000 (Australia); Siegele, Rainer [Institute for Environmental Research, Australian Nuclear Science and Technology Organisation, Lucas Heights, New South Wales 2234 (Australia); Holt, Stephen A. [Bragg Institute, Australian Nuclear Science and Technology Organisation, Lucas Heights, New South Wales 2234 (Australia); Jacob, Mohan V., E-mail: Mohan.Jacob@jcu.edu.au [College of Science, Technology and Engineering, James Cook University, Townsville, Queensland 4811 (Australia)

    2015-10-01

    Radio frequency (R.F.) glow discharge polyterpenol thin films were prepared on silicon wafers and irradiated with I{sup 10+} ions to fluences of 1 × 10{sup 10} and 1 × 10{sup 12} ions/cm{sup 2}. Post-irradiation characterisation of these films indicated the development of well-defined nano-scale ion entry tracks, highlighting prospective applications for ion irradiated polyterpenol thin films in a variety of membrane and nanotube-fabrication functions. Optical characterisation showed the films to be optically transparent within the visible spectrum and revealed an ability to selectively control the thin film refractive index as a function of fluence. This indicates that ion irradiation processing may be employed to produce plasma-polymer waveguides to accommodate a variety of wavelengths. XRR probing of the substrate-thin film interface revealed interfacial roughness values comparable to those obtained for the uncoated substrate’s surface (i.e., both on the order of 5 Å), indicating minimal substrate etching during the plasma deposition process.

  15. Characterization of thin TiO2 films prepared by plasma enhanced chemical vapour deposition for optical and photocatalytic applications

    International Nuclear Information System (INIS)

    Sobczyk-Guzenda, A.; Gazicki-Lipman, M.; Szymanowski, H.; Kowalski, J.; Wojciechowski, P.; Halamus, T.; Tracz, A.

    2009-01-01

    Thin titanium oxide films were deposited using a radio frequency (RF) plasma enhanced chemical vapour deposition method. Their optical properties and thickness were determined by means of ultraviolet-visible absorption spectrophotometry. Films of the optical parameters very close to those of titanium dioxide have been obtained at the high RF power input. Their optical quality is high enough to allow for their use in a construction of stack interference optical filters. At the same time, these materials exhibit strong photocatalytic effects. The results of structural analysis, carried out by Raman Shift Spectroscopy, show that the coatings posses amorphous structure. However, Raman spectra of the same films subjected to thermal annealing at 450 o C disclose an appearance of a crystalline form, namely that of anatase. Surface morphology of the films has also been characterized by Atomic Force Microscopy revealing granular, broccoli-like topography of the films.

  16. Optical and electrical characteristics of plasma enhanced chemical vapor deposition boron carbonitride thin films derived from N-trimethylborazine precursor

    Energy Technology Data Exchange (ETDEWEB)

    Sulyaeva, Veronica S., E-mail: veronica@niic.nsc.ru [Department of Functional Materials Chemistry, Nikolaev Institute of Inorganic Chemistry SB RAS, Novosibirsk 630090 (Russian Federation); Kosinova, Marina L.; Rumyantsev, Yurii M.; Kuznetsov, Fedor A. [Department of Functional Materials Chemistry, Nikolaev Institute of Inorganic Chemistry SB RAS, Novosibirsk 630090 (Russian Federation); Kesler, Valerii G. [Laboratory of Physical Principles for Integrated Microelectronics, Rzhanov Institute of Semiconductor Physics SB RAS, Novosibirsk 630090 (Russian Federation); Kirienko, Viktor V. [Laboratory of Nonequilibrium Semiconductors Systems, Rzhanov Institute of Semiconductor Physics SB RAS, Novosibirsk 630090 (Russian Federation)

    2014-05-02

    Thin BC{sub x}N{sub y} films have been obtained by plasma enhanced chemical vapor deposition using N-trimethylborazine as a precursor. The films were deposited on Si(100) and fused silica substrates. The grown films were characterized by ellipsometry, Fourier transform infrared spectroscopy, scanning electron microscopy, X-ray energy dispersive spectroscopy, X-ray photoelectron spectroscopy, spectrophotometry, capacitance–voltage and current–voltage measurements. The deposition parameters, such as substrate temperature (373–973 K) and gas phase composition were varied. Low temperature BC{sub x}N{sub y} films were found to be high optical transparent layers in the range of 300–2000 nm, the transmittance as high as 93% has been achieved. BC{sub x}N{sub y} layers are dielectrics with dielectric constant k = 2.2–8.9 depending on the synthesis conditions. - Highlights: • Thin BC{sub x}N{sub y} films have been obtained by plasma enhanced chemical vapor deposition. • N-trimethylborazine was used as a precursor. • Low temperature BC{sub x}N{sub y} films were found to be high optical transparent layers (93%). • BC{sub x}N{sub y} layers are dielectrics with dielectric constant k = 2.2–8.9.

  17. Optical and electrical characteristics of plasma enhanced chemical vapor deposition boron carbonitride thin films derived from N-trimethylborazine precursor

    International Nuclear Information System (INIS)

    Sulyaeva, Veronica S.; Kosinova, Marina L.; Rumyantsev, Yurii M.; Kuznetsov, Fedor A.; Kesler, Valerii G.; Kirienko, Viktor V.

    2014-01-01

    Thin BC x N y films have been obtained by plasma enhanced chemical vapor deposition using N-trimethylborazine as a precursor. The films were deposited on Si(100) and fused silica substrates. The grown films were characterized by ellipsometry, Fourier transform infrared spectroscopy, scanning electron microscopy, X-ray energy dispersive spectroscopy, X-ray photoelectron spectroscopy, spectrophotometry, capacitance–voltage and current–voltage measurements. The deposition parameters, such as substrate temperature (373–973 K) and gas phase composition were varied. Low temperature BC x N y films were found to be high optical transparent layers in the range of 300–2000 nm, the transmittance as high as 93% has been achieved. BC x N y layers are dielectrics with dielectric constant k = 2.2–8.9 depending on the synthesis conditions. - Highlights: • Thin BC x N y films have been obtained by plasma enhanced chemical vapor deposition. • N-trimethylborazine was used as a precursor. • Low temperature BC x N y films were found to be high optical transparent layers (93%). • BC x N y layers are dielectrics with dielectric constant k = 2.2–8.9

  18. High powered pulsed plasma enhanced deposition of thin film semiconductor and optical materials

    International Nuclear Information System (INIS)

    Llewellyn, I.P.; Sheach, K.J.A.; Heinecke, R.A.

    1993-01-01

    A glow discharge deposition technique is described which allows the deposition of a large range of high quality materials without the requirement for substrate heating. The method is differentiated from conventional plasma deposition techniques in that a much higher degree of dissociation is achieved in the gases prior to deposition, such that thermally activated surface reactions are no longer required in order to produce a dense film. The necessary discharge intensity (>300Wcm -3 ) is achieved using a high power radio frequency generator which is pulsed at a low duty cycle (1%) to keep the average energy of the discharge low (100W), in order to avoid the discharge heating the substrate. In addition, by varying the gas composition between discharge pulses, layered structures of materials can be produced, with a disordered interface about 8 A thick. Various uses of the technique in semiconductor and optical filter production are described, and the properties of films deposited using these technique are presented. (orig.)

  19. Photocatalytic Anatase TiO2 Thin Films on Polymer Optical Fiber Using Atmospheric-Pressure Plasma.

    Science.gov (United States)

    Baba, Kamal; Bulou, Simon; Choquet, Patrick; Boscher, Nicolas D

    2017-04-19

    Due to the undeniable industrial advantages of low-temperature atmospheric-pressure plasma processes, such as low cost, low temperature, easy implementation, and in-line process capabilities, they have become the most promising next-generation candidate system for replacing thermal chemical vapor deposition or wet chemical processes for the deposition of functional coatings. In the work detailed in this article, photocatalytic anatase TiO 2 thin films were deposited at a low temperature on polymer optical fibers using an atmospheric-pressure plasma process. This method overcomes the challenge of forming crystalline transition metal oxide coatings on polymer substrates by using a dry and up-scalable method. The careful selection of the plasma source and the titanium precursor, i.e., titanium ethoxide with a short alkoxy group, allowed the deposition of well-adherent, dense, and crystalline TiO 2 coatings at low substrate temperature. Raman and XRD investigations showed that the addition of oxygen to the precursor's carrier gas resulted in a further increase of the film's crystallinity. Furthermore, the films deposited in the presence of oxygen exhibited a better photocatalytic activity toward methylene blue degradation assumedly due to their higher amount of photoactive {101} facets.

  20. Study of the optical properties of deposited thin films on glass of HMDSO(C6H18Si2O) plasma

    International Nuclear Information System (INIS)

    Saloum, S.; Naddaf, M.

    2007-06-01

    Deposition of amorphous silicone like (Si:Ox:Cy:Hz) thin films in a remote RF hollow cathode discharge plasma using HMDSO (C 6 H 1 8Si 2 O) as monomer and Ar as feed gas, has been investigated for films optical constants as a function of RF power (100-300 W) and precursor flow rate (1-10 sccm), using different substrates: Quartz, BK7, and Glass. The optical constants (refractive index, extinction coefficient and dielectric constant) have been obtained by reflection/transmission measurements in the range 300-700 nm. The optical energy-band gap Eg and the optical-absorption tail E have been estimated from optical absorption spectra. The results were interpreted using plasma diagnostic by optical emission spectroscopy.(author)

  1. Optical thin film deposition

    International Nuclear Information System (INIS)

    Macleod, H.A.

    1979-01-01

    The potential usefulness in the production of optical thin-film coatings of some of the processes for thin film deposition which can be classified under the heading of ion-assisted techniques is examined. Thermal evaporation is the process which is virtually universally used for this purpose and which has been developed to a stage where performance is in almost all respects high. Areas where further improvements would be of value, and the possibility that ion-assisted deposition might lead to such improvements, are discussed. (author)

  2. Optical constants of silicon-like (Si:Ox:Cy:Hz) thin films deposited on quartz using hexamethyldisiloxane in a remote RF hollow cathode discharge plasma

    International Nuclear Information System (INIS)

    Saloum, S.; Naddaf, M.

    2008-01-01

    Deposition of amorphous silicon-like (Si:O x :C y :H z ) thin films in a remote RF hollow cathode discharge plasma using Hexamethyldisoloxane as monomer and Ar as feed gas; has been investigated for films optical constants and plasma diagnostic as a function of RF power (100-300 W) and precursor flow rate (1-10 sccm). Plasma diagnostic has been performed using optical emission spectroscopy (OES). The optical constants (refractive index, extinction coefficient and dielectric constant) have been obtained by reflection/transmission measurements in the range 300-700 nm. It is found that the refractive index increases from 1.92 to 1.97 with increasing power from 100 to 300 W, and from 1.70 to 1.92 with increasing precursor flow rate from 1 to 10 sccm. The optical energy-band gap E g and the optical-absorption tail ΔE have been estimated from optical absorption spectra, it is found that E g decreases from 3.28 eV to 3.14 eV with power increase from 100 to 300 W, and from 3.54 eV to 3.28 eV with precursor flow rate increase from 1 to 10 sccm. ΔE is found to increase with applied RF power and precursor flow rate increase. The dependence of optical constants on deposition parameters has been correlated to plasma OES. (author)

  3. Optical properties of the plasma hydrogenated ZnO thin films

    Czech Academy of Sciences Publication Activity Database

    Chang, Yu-Ying; Stuchlík, Jiří; Neykova, Neda; Souček, J.; Remeš, Zdeněk

    2017-01-01

    Roč. 68, č. 7 (2017), s. 70-73 ISSN 1335-3632 R&D Projects: GA ČR GC16-10429J Institutional support: RVO:68378271 Keywords : metal oxide * magnetron sputtering * thin films * reflectance interferometry * photothermal deflection spectroscopy Subject RIV: BM - Solid Matter Physics ; Magnetism OBOR OECD: Condensed matter physics (including formerly solid state physics, supercond.) Impact factor: 0.483, year: 2016

  4. THE STABILITY OF OPTICALLY THIN REACTING PLASMAS: EFFECTS OF THE BULK VISCOSITY

    International Nuclear Information System (INIS)

    Ibanez S, Miguel H.

    2009-01-01

    The thermochemical stability of reacting plasmas is analyzed by taking into account the change in the thermodynamical equilibrium values during the fluctuation. This shift in the equilibrium produces two main effects: a change in the four instability criteria for reacting gases resulting when the above effect is neglected and adds a fifth instability criterion due to the fact that the corresponding secular equation becomes a fifth-order polynomial. The above results are applied to several plasma models, in particular, to a photoionized hydrogen plasma for which the bulk viscosity can be more important than the dynamic viscosity and the thermometric conductivity. Therefore, the bulk viscosity may quench thermochemical instabilities were the thermal conduction is unable of stabilizing. This occurs for low values of the photoionizing energy E. The implications of the above results in explaining the formation of clump structures in different regions of the interstellar medium are outlined.

  5. Study of emission process in hot, optically thin plasma: application to solar active regions

    International Nuclear Information System (INIS)

    Steenman-Clark, Lois.

    1983-06-01

    Analysis of soft X-ray got in hot and weak density plasmas, such as those in TOKAMAKS and in solar flares, needs a detailed knowledge of emission processes. In this work are presented spectroscopic diagnostics which can be deduced from such spectra analysis and results are applied to magnesium solar spectrum analysis. An important improvement is brought to collisional calculation corresponding to forbidden line populating. For this line, The relative importance of autoionizing states effect, called also resonance effect is studied [fr

  6. Structure and optical band-gap energies of Ba0.5Sr0.5TiO3 thin films fabricated by RF magnetron plasma sputtering

    International Nuclear Information System (INIS)

    Xu, Zhimou; Suzuki, Masato; Yokoyama, Shin

    2005-01-01

    The structure and optical band-gap energies of Ba 0.5 Sr 0.5 TiO 3 (BST0.5) thin films prepared on SiO 2 /Si and fused quartz substrates by RF magnetron plasma sputtering were studied in terms of deposition temperature and film thickness. Highly (100)-oriented BST0.5 thin films were successfully sputtered on a Si substrate with an approximately 1.0-μm-thick SiO 2 layer at a deposition temperature of above 450degC. The optical transmittance of BST0.5 thin films weakly depended on the magnitude of X-ray diffraction (XRD) peak intensity. This is very helpful for monolithic integration of BST0.5 films for electrooptical functions directly onto a SiO 2 /Si substrate. The band-gap energies showed a strong dependence on the deposition temperature and film thickness. It was mainly related to the quantum size effect and the influence of the crystallinity of thin films, such as grain boundaries, grain size, oriented growth, and the existence of an amorphous phase. The band-gap energy values, which were much larger than those of single crystals, decreased with the increase in the deposition temperature and the thickness of BST0.5 thin films. The band-gap energy of 311-nm-thick amorphous BST0.5 thin film was about 4.45 eV and that of (100)-oriented BST0.5 thin film with a thickness of 447 nm was about 3.89 eV. It is believed that the dependence of the band-gap energies of the thin films on the crystallinity for various values of deposition temperature and film thickness means that there could be application in integrated optical devices. (author)

  7. Population inversion and threshold condition for laser oscillation in optically thin and thick recombining plasmas

    International Nuclear Information System (INIS)

    Oda, Toshiatsu; Furukane, Utaro.

    1982-03-01

    Overpopulation density δn sub(ij) which is defined as difference between the population densities per unit statistical weight of the upper and lower excited levels i and j is calculated as a function of the electron density n sub(e) for various electron temperatures T sub(e) in recombining hydrogen plasmas. The calculation is made for the line pairs with the principal quantum numbers, (2, 3), (3, 4) and (4, 5). Effect of the ground level population density n sub(l) on δn sub(ij) is calculated. In this calculation the atom-atom collision and the self-absorption of the resonance lines are taken account of. The n sub(l)-dependence of δn sub(ij) remains almost constant until the self-absorption becomes significant. When n sub(l) is zero, an optimum value of n sub(e) exists for δn sub(ij). The threshold condition for laser oscillation is discussed in relation to the calculated δn sub(ij). Laser oscillation is possible for the line pair (2, 3) at an electron density and temperature higher than for the other pairs (3, 4) and (4, 5) when the self-absorption is negligible. (author)

  8. Electronic and optical device applications of hollow cathode plasma assisted atomic layer deposition based GaN thin films

    International Nuclear Information System (INIS)

    Bolat, Sami; Tekcan, Burak; Ozgit-Akgun, Cagla; Biyikli, Necmi; Okyay, Ali Kemal

    2015-01-01

    Electronic and optoelectronic devices, namely, thin film transistors (TFTs) and metal–semiconductor–metal (MSM) photodetectors, based on GaN films grown by hollow cathode plasma-assisted atomic layer deposition (PA-ALD) are demonstrated. Resistivity of GaN thin films and metal-GaN contact resistance are investigated as a function of annealing temperature. Effect of the plasma gas and postmetallization annealing on the performances of the TFTs as well as the effect of the annealing on the performance of MSM photodetectors are studied. Dark current to voltage and responsivity behavior of MSM devices are investigated as well. TFTs with the N 2 /H 2 PA-ALD based GaN channels are observed to have improved stability and transfer characteristics with respect to NH 3 PA-ALD based transistors. Dark current of the MSM photodetectors is suppressed strongly after high-temperature annealing in N 2 :H 2 ambient

  9. A procedure for estimating the electron temperature and the departure of the LTE condition in a time-dependent, spatially homogeneous, optically thin plasma

    Energy Technology Data Exchange (ETDEWEB)

    Bredice, F. [Centro de Investigaciones Opticas, La Plata (Argentina); Borges, F.O., E-mail: borges@if.uff.br [Universidade Federal Fluminense (UFF), Niteroi, RJ (Brazil). Instituto de Fisica. Lab. de Plasma e Espectroscopia; Di Rocco, H.O. [Instituto de Fisica Arroyo Seco (IFAS), Universidad Nacional del Centro, Tandil (Argentina); Mercado, R.S. [Grupo de Espectroscopia Optica de Emision y Laser (GEOEL), Universidad del Atlantico, Barranquilla (Colombia); Villagran-Muniz, M. [Laboratorio de Fotofisica, Centro de Ciencias Aplicadas y Desarrollo Tecnologico, Universidad Nacional Autonoma de Mexico (Mexico); Palleschi, V. [Applied Laser Spectroscopy Laboratory, ICCOM-CNR, Pisa (Italy)

    2013-08-15

    We present a method to estimate the temperature of transient plasmas and their degree of departure from local thermodynamic equilibrium conditions. Our method is based on application of the Saha–Boltzmann equations on the temporal variation of the intensity of the spectral lines of the plasma, under the assumption that the plasmas at the different times when the spectra were obtained are in local thermodynamic equilibrium. The method requires no knowledge of the spectral efficiency of the spectrometer/detector, transition probabilities of the considered lines, or degeneracies of the upper and lower levels. Provided that the conditions of optically thin, homogeneous plasma in local thermodynamic equilibrium are satisfied, the accuracy of the procedure is limited only by the precision with which the line intensities and densities can be determined at two different temperatures. The procedure generates an equation describing the temporal evolution of the electron number density of transient plasmas under local thermodynamic equilibrium conditions. The method is applied to the analysis of two laser-induced breakdown spectra of cadmium at different temperatures. (author)

  10. A procedure for estimating the electron temperature and the departure of the LTE condition in a time-dependent, spatially homogeneous, optically thin plasma

    International Nuclear Information System (INIS)

    Bredice, F.; Borges, F.O.; Mercado, R.S.; Villagran-Muniz, M.; Palleschi, V.

    2013-01-01

    We present a method to estimate the temperature of transient plasmas and their degree of departure from local thermodynamic equilibrium conditions. Our method is based on application of the Saha–Boltzmann equations on the temporal variation of the intensity of the spectral lines of the plasma, under the assumption that the plasmas at the different times when the spectra were obtained are in local thermodynamic equilibrium. The method requires no knowledge of the spectral efficiency of the spectrometer/detector, transition probabilities of the considered lines, or degeneracies of the upper and lower levels. Provided that the conditions of optically thin, homogeneous plasma in local thermodynamic equilibrium are satisfied, the accuracy of the procedure is limited only by the precision with which the line intensities and densities can be determined at two different temperatures. The procedure generates an equation describing the temporal evolution of the electron number density of transient plasmas under local thermodynamic equilibrium conditions. The method is applied to the analysis of two laser-induced breakdown spectra of cadmium at different temperatures. (author)

  11. Structural, Optical, and Electrical Characterization of β-Ga2O3 Thin Films Grown by Plasma-Assisted Molecular Beam Epitaxy Suitable for UV Sensing

    Directory of Open Access Journals (Sweden)

    Abraham Arias

    2018-01-01

    Full Text Available β-Ga2O3 thin films were grown on c-plane sapphire substrates by plasma-assisted molecular beam epitaxy. The films were grown using an elemental gallium source and oxygen supplied by an RF plasma source. Reflection high-energy electron diffraction (RHEED was used to monitor the surface quality in real time. Both in situ RHEED and ex situ X-ray diffraction confirmed the formation of single crystal β-phase films with excellent crystallinity on c-plane sapphire. Spectroscopic ellipsometry was used to determine the film thicknesses, giving values in the 11.6–18.8 nm range and the refractive index dispersion curves. UV-Vis transmittance measurements revealed that strong absorption of β-Ga2O3 starts at ∼270 nm. Top metal contacts were deposited by thermal evaporation for I-V characterization, which has been carried out in dark, as well as under visible and UV light illumination. The optical and electrical measurements showed that the grown thin films of β-Ga2O3 are excellent candidates for deep-ultraviolet detection and sensing.

  12. Thin films for precision optics

    International Nuclear Information System (INIS)

    Araujo, J.F.; Maurici, N.; Castro, J.C. de

    1983-01-01

    The technology of producing dielectric and/or metallic thin films for high precision optical components is discussed. Computer programs were developed in order to calculate and register, graphically, reflectance and transmittance spectra of multi-layer films. The technology of vacuum evaporation of several materials was implemented in our thin-films laboratory; various films for optics were then developed. The possibility of first calculate film characteristics and then produce the film is of great advantage since it reduces the time required to produce a new type of film and also reduces the cost of the project. (C.L.B.) [pt

  13. Effects of phosphorus doping by plasma immersion ion implantation on the structural and optical characteristics of Zn0.85Mg0.15O thin films

    International Nuclear Information System (INIS)

    Saha, S.; Nagar, S.; Chakrabarti, S.

    2014-01-01

    ZnMgO thin films deposited on 〈100〉 Si substrates by RF sputtering were annealed at 800, 900, and 1000 °C after phosphorus plasma immersion ion implantation. X-ray diffraction spectra confirmed the presence of 〈101 ¯ 0〉 and 〈101 ¯ 3〉 peaks for all the samples. However, in case of the annealed samples, the 〈0002〉 peak was also observed. Scanning electron microscopy images revealed the variation in surface morphology caused by phosphorus implantation. Implanted and non-implanted samples were compared to examine the effects of phosphorus implantation on the optical properties of ZnMgO. Optical characteristics were investigated by low-temperature (15 K) photoluminescence experiments. Inelastic exciton–exciton scattering and localized, and delocalized excitonic peaks appeared at 3.377, 3.42, and 3.45 eV, respectively, revealing the excitonic effect resulting from phosphorus implantation. This result is important because inelastic exciton–exciton scattering leads to nonlinear emission, which can improve the performance of many optoelectronic devices

  14. Optical, mechanical and surface properties of amorphous carbonaceous thin films obtained by plasma enhanced chemical vapor deposition and plasma immersion ion implantation and deposition

    Science.gov (United States)

    Turri, Rafael G.; Santos, Ricardo M.; Rangel, Elidiane C.; da Cruz, Nilson C.; Bortoleto, José R. R.; Dias da Silva, José H.; Antonio, César Augusto; Durrant, Steven F.

    2013-09-01

    Diverse amorphous hydrogenated carbon-based films (a-C:H, a-C:H:F, a-C:H:N, a-C:H:Cl and a-C:H:Si:O) were obtained by radiofrequency plasma enhanced chemical vapor deposition (PECVD) and plasma immersion ion implantation and deposition (PIIID). The same precursors were used in the production of each pair of each type of film, such as a-C:H, using both PECVD and PIIID. Optical properties, namely the refractive index, n, absorption coefficient, α, and optical gap, ETauc, of these films were obtained via transmission spectra in the ultraviolet-visible near-infrared range (wavelengths from 300 to 3300 nm). Film hardness, elastic modulus and stiffness were obtained as a function of depth using nano-indentation. Surface energy values were calculated from liquid drop contact angle data. Film roughness and morphology were assessed using atomic force microscopy (AFM). The PIIID films were usually thinner and possessed higher refractive indices than the PECVD films. Determined refractive indices are consistent with literature values for similar types of films. Values of ETauc were increased in the PIIID films compared to the PECVD films. An exception was the a-C:H:Si:O films, for which that obtained by PIIID was thicker and exhibited a decreased ETauc. The mechanical properties - hardness, elastic modulus and stiffness - of films produced by PECVD and PIIID generally present small differences. An interesting effect is the increase in the hardness of a-C:H:Cl films from 1.0 to 3.0 GPa when ion implantation is employed. Surface energy correlates well with surface roughness. The implanted films are usually smoother than those obtained by PECVD.

  15. Optical, mechanical and surface properties of amorphous carbonaceous thin films obtained by plasma enhanced chemical vapor deposition and plasma immersion ion implantation and deposition

    International Nuclear Information System (INIS)

    Turri, Rafael G.; Santos, Ricardo M.; Rangel, Elidiane C.; Cruz, Nilson C. da; Bortoleto, José R.R.; Dias da Silva, José H.; Antonio, César Augusto; Durrant, Steven F.

    2013-01-01

    Diverse amorphous hydrogenated carbon-based films (a-C:H, a-C:H:F, a-C:H:N, a-C:H:Cl and a-C:H:Si:O) were obtained by radiofrequency plasma enhanced chemical vapor deposition (PECVD) and plasma immersion ion implantation and deposition (PIIID). The same precursors were used in the production of each pair of each type of film, such as a-C:H, using both PECVD and PIIID. Optical properties, namely the refractive index, n, absorption coefficient, α, and optical gap, E Tauc , of these films were obtained via transmission spectra in the ultraviolet–visible near-infrared range (wavelengths from 300 to 3300 nm). Film hardness, elastic modulus and stiffness were obtained as a function of depth using nano-indentation. Surface energy values were calculated from liquid drop contact angle data. Film roughness and morphology were assessed using atomic force microscopy (AFM). The PIIID films were usually thinner and possessed higher refractive indices than the PECVD films. Determined refractive indices are consistent with literature values for similar types of films. Values of E Tauc were increased in the PIIID films compared to the PECVD films. An exception was the a-C:H:Si:O films, for which that obtained by PIIID was thicker and exhibited a decreased E Tauc . The mechanical properties – hardness, elastic modulus and stiffness – of films produced by PECVD and PIIID generally present small differences. An interesting effect is the increase in the hardness of a-C:H:Cl films from 1.0 to 3.0 GPa when ion implantation is employed. Surface energy correlates well with surface roughness. The implanted films are usually smoother than those obtained by PECVD.

  16. Effect of the hydrogen flow rate on the structural and optical properties of hydrogenated amorphous silicon thin films prepared by plasma enhanced chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Ben Amor, Sana; Dimassi, Wissem; Ali Tebai, Mohamed; Ezzaouia, Hatem [Photovoltaic Laboratory Research and Technology Centre of Energy, Borj-Cedria Science and Technology Park, BP 95, 2050 Hammam-Lif (Tunisia)

    2012-10-15

    Hydrogenated amorphous silicon (a-Si:H) thin films were deposited from pure silane (SiH{sub 4}) and hydrogen (H{sub 2}) gas mixture by plasma enhanced chemical vapor deposition (PECVD) method at low temperature (400 C) using high rf power (60 W). The structural and optical properties of these films are systematically investigated as a function of the flow rate of hydrogen (F{sub H2}).The surface morphology is analyzed by atomic force microscopy (AFM). The characterization of these films with low angle X-ray diffraction revealed that the crystallite size in the films tends to decrease with increase in (F{sub H2}). The Fourier transform infrared (FTIR) spectroscopic analysis showed that at low values of (F{sub H2}),the hydrogen bonding in Si:H films shifts from di-hydrogen (Si-H{sub 2}) and (Si-H{sub 2})n complexes to the mono-hydrogen (Si-H) bonding configuration. Finally, for these optimized conditions, the deposition rate decreases with increasing (F{sub H2}). (copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  17. Thin low Z coatings for plasma devices

    International Nuclear Information System (INIS)

    Norem, J.; Bowers, D.A.

    1978-05-01

    Coating the walls of the vacuum chamber with beryllium or some other low Z material has been proposed as a possible means of solving the problems of high Z influx into plasmas. We attempt to demonstrate that very thin, low Z coatings are compatible with the operation of plasma devices and beneficial to plasma performance. We determine that the thickness of coating material required is only about 10 monolayers. In a radiation environment, radiation-induced solute segregation should help to maintain the integrity of such thin coatings against diffusion and other processes. We discuss the properties of these thin coatings and possible means of in situ application and maintenance. Since deposition of plasma impurities on the walls will occur anyway, we discuss injection of solid pellets into the plasma as a direct way of introducing impurities which would ultimately serve as coating material

  18. Optical properties of cluster plasma

    Energy Technology Data Exchange (ETDEWEB)

    Kishimoto, Yasuaki; Tajima, Toshiki [Japan Atomic Energy Research Inst., Neyagawa, Osaka (Japan). Kansai Research Establishment; Downer, M C

    1998-03-01

    It is shown that unlike a gas plasma or an electron plasma in a metal, an ionized clustered material (`cluster plasma`) permits propagation below the plasma cut-off of electromagnetic (EM) waves whose phase velocity is close to but below the speed of light. This results from the excitation of a plasma oscillation mode (and/or polarization mode) through the cluster surface which does not exist in usual gaseous plasma. The existence of this new optical mode, cluster mode, is confirmed via numerical simulation. (author)

  19. Fiber optic based optical tomography sensor for monitoring plasma uniformity

    International Nuclear Information System (INIS)

    Benck, Eric C.; Etemadi, Kasra

    2001-01-01

    A new type of fiber optic based optical tomography sensor has been developed for in situ monitoring of plasma uniformity. Optical tomography inverts optical emission measurements into the actual plasma distribution without assuming radial symmetry. The new sensor is designed to operate with only two small windows and acquire the necessary data in less than a second. Optical tomography is being tested on an ICP-GEC RF plasma source. Variations in plasma uniformity are measured as a function of different plasma conditions

  20. Optical diagnostics for plasma etching

    NARCIS (Netherlands)

    Bisschops, T.H.J.; Kroesen, G.M.W.; Veldhuizen, van E.M.; de Zeeuw, C.J.H.; Timmermans, C.J.

    1985-01-01

    Several optical diagnostics were used to det. plasma properties and etch rates in an single wafer etch reactor. Results of UV-visible spectroscopy and IR absorption spectroscopy, indicating different mol. species and their densities are presented. The construction of an interferometer to det. the

  1. Optical plasma diagnostics

    International Nuclear Information System (INIS)

    Gross, B.

    1973-01-01

    The measurement is described of the radial courses of temperature and electron, atom and ion density in the plasma of a water-stabilized arc with currents from 20 A to 60 A. For temperature measurement a method based on the determination of the relative intensity of Balmer lines was used. The electron density was measured by determining the Hsub(β) line profile and the relative density of other particles was measured by determining the intensity ratio of radiation emitted by the respective atoms or ions. (author)

  2. Optical thin films and coatings from materials to applications

    CERN Document Server

    Flory, Francois

    2013-01-01

    Optical coatings, including mirrors, anti-reflection coatings, beam splitters, and filters, are an integral part of most modern optical systems. This book provides an overview of thin film materials, the properties, design and manufacture of optical coatings and their use across a variety of application areas.$bOptical coatings, including mirrors, anti-reflection coatings, beam splitters, and filters, are an integral part of most modern optical systems. Optical thin films and coatings provides an overview of thin film materials, the properties, design and manufacture of optical coatings and their use across a variety of application areas. Part one explores the design and manufacture of optical coatings. Part two highlights unconventional features of optical thin films including scattering properties of random structures in thin films, optical properties of thin film materials at short wavelengths, thermal properties and colour effects. Part three focusses on novel materials for optical thin films and coatings...

  3. Basic characteristics of thin wire arc plasma

    International Nuclear Information System (INIS)

    Urushihara, K.; Endoh, N.; Ono, S.; Teii, S.; Ishimura, T.

    1998-01-01

    The investigated plasma was generated by applying an electric current of about 50 A to a copper wire of 48 μm diameter in air. The development in time of emission spectra was measured and relative line intensity ratios were used to determine the temperature. The extension of the plasma was measured with a movable electrostatic probe which was placed next to the thin wire, and the electron density was estimated using the known electron mobility. The electron temperature was typically about 8000 K. On the other hand, the electron density tended to decrease with time from about 3.10 16 cm -3

  4. Modifications in SnS thin films by plasma treatments

    Energy Technology Data Exchange (ETDEWEB)

    Martinez, H., E-mail: hm@fis.unam.mx [Instituto de Ciencias Fisicas, Universidad Nacional Autonoma de Mexico, Apartado Postal 48-3, 62210 Cuernavaca, Morelos (Mexico); Avellaneda, D. [Facultad de Ingenieria Mecanica y Electrica, Universidad Autonoma de Nuevo Leon (Mexico)

    2012-02-01

    The present study shows the modifications of structural, optical and electrical characteristics that occur in tin sulfide (SnS) thin films treated in air and in nitrogen plasma at different pressure conditions. The films were obtained by the chemical bath deposition method, which results in SnS thin films with an orthorhombic crystalline structure, band gap (E{sub g}) of 1.1-1.2 eV, and electrical conductivities ({sigma}) in the order of 10{sup -6} {Omega}{sup -1}cm{sup -1}. The films treated with air plasma at pressures between 1 and 4 Torr, showed the presence of SnS{sub 2}, Sn{sub 2}S{sub 3}, and SnO{sub 2} phases, within the band gap values ranging from 0.9 to 1.5 eV. On the other hand, the films treated with nitrogen plasma presented the same phases, but showed a significant modification in the electrical conductivity, increasing from 10{sup -6} {Omega}{sup -1}cm{sup -1} (as-deposited) up to 10{sup -2}-10{sup -3} {Omega}{sup -1}cm{sup -1} (plasma treated). This result is a suitable range of conductivity for the improvement of the solar cells with SnS as an absorber material. Also, emission spectroscopy measurements were carried out in both air and nitrogen plasma treatments.

  5. Analysis of a Thin Optical Lens Model

    Science.gov (United States)

    Ivchenko, Vladimir V.

    2011-01-01

    In this article a thin optical lens model is considered. It is shown that the limits of its applicability are determined not only by the ratio between the thickness of the lens and the modules of the radii of curvature, but above all its geometric type. We have derived the analytical criteria for the applicability of the model for different types…

  6. Optical properties of diamond like carbon nanocomposite thin films

    Science.gov (United States)

    Alam, Md Shahbaz; Mukherjee, Nillohit; Ahmed, Sk. Faruque

    2018-05-01

    The optical properties of silicon incorporated diamond like carbon (Si-DLC) nanocomposite thin films have been reported. The Si-DLC nanocomposite thin film deposited on glass and silicon substrate by radio frequency plasma enhanced chemical vapor deposition (RF-PECVD) process. Fourier transformed infrared spectroscopic analysis revealed the presence of different bonding within the deposited films and deconvolution of FTIR spectra gives the chemical composition i.e., sp3/sp2 ratio in the films. Optical band gap calculated from transmittance spectra increased from 0.98 to 2.21 eV with a variation of silicon concentration from 0 to 15.4 at. %. Due to change in electronic structure by Si incorporation, the Si-DLC film showed a broad photoluminescence (PL) peak centered at 467 nm, i.e., in the visible range and its intensity was found to increase monotonically with at. % of Si.

  7. Modification of optical and electrical properties of chemical bath deposited CdS using plasma treatments

    International Nuclear Information System (INIS)

    Gonzalez, G.; Krishnan, B.; Avellaneda, D.; Castillo, G. Alan; Das Roy, T.K.; Shaji, S.

    2011-01-01

    Cadmium sulphide (CdS) is a well known n-type semiconductor that is widely used in solar cells. Here we report preparation and characterization of chemical bath deposited CdS thin films and modification of their optical and electrical properties using plasma treatments. CdS thin films were prepared from a chemical bath containing Cadmium chloride, Triethanolamine and Thiourea under various deposition conditions. Good quality thin films were obtained during deposition times of 5, 10 and 15 min. CdS thin films prepared for 10 min. were treated using a glow discharge plasma having nitrogen and argon carrier gases. The changes in morphology, optical and electrical properties of these plasma treated CdS thin films were analyzed in detail. The results obtained show that plasma treatment is an effective technique in modification of the optical and electrical properties of chemical bath deposited CdS thin films.

  8. Modification of optical and electrical properties of chemical bath deposited CdS using plasma treatments

    Energy Technology Data Exchange (ETDEWEB)

    Gonzalez, G. [Facultad de Ingenieria Mecanica y Electrica, Universidad Autonoma de Nuevo Leon, San Nicolas de los Garza, Nuevo Leon, C.P 66450 (Mexico); Krishnan, B. [Facultad de Ingenieria Mecanica y Electrica, Universidad Autonoma de Nuevo Leon, San Nicolas de los Garza, Nuevo Leon, C.P 66450 (Mexico); CIIDIT, Universidad Autonoma de Nuevo Leon, Apodaca, Nuevo Leon (Mexico); Avellaneda, D.; Castillo, G. Alan; Das Roy, T.K. [Facultad de Ingenieria Mecanica y Electrica, Universidad Autonoma de Nuevo Leon, San Nicolas de los Garza, Nuevo Leon, C.P 66450 (Mexico); Shaji, S., E-mail: sshajis@yahoo.com [Facultad de Ingenieria Mecanica y Electrica, Universidad Autonoma de Nuevo Leon, San Nicolas de los Garza, Nuevo Leon, C.P 66450 (Mexico); CIIDIT, Universidad Autonoma de Nuevo Leon, Apodaca, Nuevo Leon (Mexico)

    2011-08-31

    Cadmium sulphide (CdS) is a well known n-type semiconductor that is widely used in solar cells. Here we report preparation and characterization of chemical bath deposited CdS thin films and modification of their optical and electrical properties using plasma treatments. CdS thin films were prepared from a chemical bath containing Cadmium chloride, Triethanolamine and Thiourea under various deposition conditions. Good quality thin films were obtained during deposition times of 5, 10 and 15 min. CdS thin films prepared for 10 min. were treated using a glow discharge plasma having nitrogen and argon carrier gases. The changes in morphology, optical and electrical properties of these plasma treated CdS thin films were analyzed in detail. The results obtained show that plasma treatment is an effective technique in modification of the optical and electrical properties of chemical bath deposited CdS thin films.

  9. ZnO and Al doped ZnO thin films deposited by Spray Plasma: Effect of the growth time and Al doping on microstructural, optical and electrical properties

    International Nuclear Information System (INIS)

    Baba, Kamal; Lazzaroni, Claudia; Nikravech, Mehrdad

    2015-01-01

    Nanostructured zinc oxide (ZnO) and Al doped ZnO (ZnO:Al) thin films are deposited on glass substrate by the Spray Plasma technique. Zinc nitrate and aluminium nitrate are used as Zn and Al precursors, respectively. The effect of the growth time on structural and optical properties of undoped films is studied by X-ray diffraction, atomic force microscopy, and UV–Vis spectroscopy. The effect of Al doping on microstructural, optical and electrical characteristics of ZnO:Al films is also investigated. The results show that the grain size and the film thickness both increase with the growth time. The band gap of the layers varies from 3.17 to 3.24 eV depending on the thickness. The increase of the Al doping results in the enlargement of the peak (002) and the shift of its position to higher 2θ values. Average optical transmittance decreases from 90 to 65% with the growth time because of the thickness increase while there is no significant influence of the aluminium doping on the transmittance which is above 80% in most of the visible and near-IR range for all ZnO:Al films. The electrical properties characterized by Hall measurements show that all the deposited films exhibit high resistivity, between 4 and 10 4 Ω cm. The carrier concentration decreases from 2.10 19 to 2.10 13 cm −3 when the concentration of Al increases from 1.5 to 5 atm%. - Highlights: • The original Spray Plasma technique is used for ZnO and ZnO:Al thin film deposition. • Investigation of the effect of growth time and Al doping on the structural and optical properties • Increase of grain size and film thickness with the growth time • Optical transmittance decreases from 90 to 65% with the growth time and is above 80% for ZnO:Al films in UV–Vis-NIR range. • The peak position of the (002) plane is shifted to high 2θ values with Al doping.

  10. Optical constant of thin gold films

    DEFF Research Database (Denmark)

    Yakubovsky, D. I.; Fedyanin, D. Yu; Arsenin, A. V.

    2017-01-01

    The performance of metal-based devices is limited by ohmic losses in the metal, which are determined by electron scattering. The structural properties of gold thin films also play an important role in the film quality, which may affect its' optical properties and the overall capability...... and spectroscopic ellipsometry, the structural morphology and optical properties of polycrystalline gold thin films (fabricated by e-beam deposition at a low sputtering rate smooth gold) in the thickness range of 20 - 200 nm. By extracting the real and imaginary dielectric function and the Drude parameter...... of the device. At the same time, metal films of different thicknesses are needed for different applications and, since these films are polycrystalline, their internal properties and surface roughness can greatly vary from one thickness to another. In this work, we study, using atomic force microscopy...

  11. Optical characterization of thin solid films

    CERN Document Server

    Ohlídal, Miloslav

    2018-01-01

    This book is an up-to-date survey of the major optical characterization techniques for thin solid films. Emphasis is placed on practicability of the various approaches. Relevant fundamentals are briefly reviewed before demonstrating the application of these techniques to practically relevant research and development topics. The book is written by international top experts, all of whom are involved in industrial research and development projects.

  12. Role of plasma activation in tailoring the nanostructure of multifunctional oxides thin films

    Energy Technology Data Exchange (ETDEWEB)

    Giangregorio, Maria M.; Losurdo, Maria; Capezzuto, Pio [Institute of Inorganic Methodologies and Plasmas, IMIP-CNR, and Department of Chemistry, University of Bari, via Orabona, 4-70125 Bari (Italy); Bruno, Giovanni [Institute of Inorganic Methodologies and Plasmas, IMIP-CNR, and Department of Chemistry, University of Bari, via Orabona, 4-70125 Bari (Italy)], E-mail: giovanni.bruno@ba.imip.cnr.it

    2009-03-01

    Potential of O{sub 2} remote plasmas for improving structural, morphological and optical properties of various multifunctional oxides thin films both during plasma assisted growth as well as by post-growth treatments is discussed. In particular, an O{sub 2} remote plasma metalorganic chemical vapor deposition (RP-MOCVD) route is presented for tailoring the structural, morphological and optical properties of Er{sub 2}O{sub 3} and ZnO films. Furthermore, post-growth room-temperature remote O{sub 2} plasma treatments of indium-tin-oxides (ITO) films are demonstrated to be effective in improving morphology of ITO films.

  13. Plasma properties during magnetron sputtering of lithium phosphorous oxynitride thin films

    DEFF Research Database (Denmark)

    Christiansen, Ane Sælland; Stamate, Eugen; Thydén, Karl Tor Sune

    2015-01-01

    The nitrogen dissociation and plasma parameters during radio frequency sputtering of lithium phosphorus oxynitride thin films in nitrogen gas are investigated by mass appearance spectrometry, electrostatic probes and optical emission spectroscopy, and the results are correlated with electrochemical...... properties and microstructure of the films. Low pressure and moderate power are associated with lower plasma density, higher electron temperature, higher plasma potential and larger diffusion length for sputtered particles. This combination of parameters favors the presence of more atomic nitrogen, a fact...

  14. Optical plasma torch electron bunch generation in plasma wakefield accelerators

    Directory of Open Access Journals (Sweden)

    G. Wittig

    2015-08-01

    Full Text Available A novel, flexible method of witness electron bunch generation in plasma wakefield accelerators is described. A quasistationary plasma region is ignited by a focused laser pulse prior to the arrival of the plasma wave. This localized, shapeable optical plasma torch causes a strong distortion of the plasma blowout during passage of the electron driver bunch, leading to collective alteration of plasma electron trajectories and to controlled injection. This optically steered injection is more flexible and faster when compared to hydrodynamically controlled gas density transition injection methods.

  15. Investigation of plasma dynamics during the growth of amorphous titanium dioxide thin films

    Science.gov (United States)

    Kim, Jin-Soo; Jee, Hyeok; Yu, Young-Hun; Seo, Hye-Won

    2018-06-01

    We have grown amorphous titanium dioxide thin films by reactive DC sputtering method using a different argon/oxygen partial pressure at a room temperature. The plasma dynamics of the process, reactive and sputtered gas particles was investigated via optical emission spectroscopy. We then studied the correlations between the plasma states and the structural/optical properties of the films. The growth rate and morphology of the titanium dioxide thin films turned out to be contingent with the population and the energy profile of Ar, O, and TiO plasma. In particular, the films grown under energetic TiO plasma have shown a direct band-to-band transition with an optical energy band gap up to ∼4.2 eV.

  16. Optical response from functionalized atomically thin nanomaterials

    Energy Technology Data Exchange (ETDEWEB)

    Malic, Ermin; Berghaeuser, Gunnar; Feierabend, Maja [Department of Physics, Chalmers University of Technology, Gothenburg (Sweden); Knorr, Andreas [Institut fuer Theoretische Physik, Technische Universitaet Berlin (Germany)

    2017-10-15

    Chemical functionalization of atomically thin nanostructures presents a promising strategy to create new hybrid nanomaterials with remarkable and externally controllable properties. Here, we review our research in the field of theoretical modeling of carbon nanotubes, graphene, and transition metal dichalcogenides located in molecular dipole fields. In particular, we provide a microscopic view on the change of the optical response of these technologically promising nanomaterials due to the presence of photo-active spiropyran molecules. The feature article presents a review of recent theoretical work providing microscopic view on the optical response of chemically functionalized carbon nanotubes, graphene, and monolayered transition metal dichalcogenides. In particular, we propose a novel sensor mechanism based on the molecule-induced activation of dark excitons. This results in a pronounced additional peak presenting an unambiguous optical fingerprint for the attached molecules. (copyright 2017 by WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  17. Effects of phosphorus doping by plasma immersion ion implantation on the structural and optical characteristics of Zn{sub 0.85}Mg{sub 0.15}O thin films

    Energy Technology Data Exchange (ETDEWEB)

    Saha, S.; Nagar, S.; Chakrabarti, S., E-mail: subho@ee.iitb.ac.in [Department of Electrical Engineering, Indian Institute of Technology Bombay, Powai, Mumbai 400076 (India)

    2014-08-11

    ZnMgO thin films deposited on 〈100〉 Si substrates by RF sputtering were annealed at 800, 900, and 1000 °C after phosphorus plasma immersion ion implantation. X-ray diffraction spectra confirmed the presence of 〈101{sup ¯}0〉 and 〈101{sup ¯}3〉 peaks for all the samples. However, in case of the annealed samples, the 〈0002〉 peak was also observed. Scanning electron microscopy images revealed the variation in surface morphology caused by phosphorus implantation. Implanted and non-implanted samples were compared to examine the effects of phosphorus implantation on the optical properties of ZnMgO. Optical characteristics were investigated by low-temperature (15 K) photoluminescence experiments. Inelastic exciton–exciton scattering and localized, and delocalized excitonic peaks appeared at 3.377, 3.42, and 3.45 eV, respectively, revealing the excitonic effect resulting from phosphorus implantation. This result is important because inelastic exciton–exciton scattering leads to nonlinear emission, which can improve the performance of many optoelectronic devices.

  18. Optical orientation of atoms in plasma

    Energy Technology Data Exchange (ETDEWEB)

    Zhitnikov, R

    1979-06-01

    The results are summed up of experimental work on the optical orientation of atoms in a plasma conducted by the Atomic Radiospectroscopy Group at the AN SSSR Physical Technology Institute. The main methods of forming and observing the optical orientation of atoms in a helium plasma and an alkali metal plasma are described in detail. A quantum mechanical explanation is given of all observed phenomena. The most significant results include the discovery of the effect of the optical orientation of atoms in a plasma on the plasma optical and electrical properties, such as electric conductivity, emitted light intensity, ionization degree, and electron density. The phenomenon applies generally and is inherent to plasmas of different chemical compositions, at the optical orientation of atoms of different elements. The methods are indicated of the practical application of the phenomenon in designing principally new precision quantum magnetometers.

  19. Optical orientation of atoms in plasma

    International Nuclear Information System (INIS)

    Zhitnikov, R.

    1979-01-01

    The results are summed up of experimental work on the optical orientation of atoms in a plasma conducted by the Atomic Radiospectroscopy Group at the AN SSSR Physical Technology Institute. The main methods of forming and observing the optical orientation of atoms in a helium plasma and an alkali metal plasma are described in detail. A quantum mechanical explanation is given of all observed phenomena. The most significant results include the discovery of the effect of the optical orientation of atoms in a plasma on the plasma optical and electrical properties, such as electric conductivity, emitted light intensity, ionization degree, and electron density. The phenomenon applies generally and is inherent to plasmas of different chemical compositions, at the optical orientation of atoms of different elements. The methods are indicated of the practical application of the phenomenon in designing principally new precision quantum magnetometers. (J.U.)

  20. Optics and Plasma Research Department annual progress report for 2004

    OpenAIRE

    Bindslev, Henrik; Lynov, Jens-Peter; Pedersen, C.; Petersen, Paul Michael; Skaarup, Bitten

    2005-01-01

    The Optics and Plasma Research Department performs basic and applied research within three scientific programmes: (1) laser systems and optical materials, (2) optical diagnostics and information processing and (3) plasma physics and technology. Thedepartment has core competencies in optical sensors, optical materials, biophotonics, fusion plasma physics, and industrial plasma technology. The department employs key technologies in micro- and nanotechnology for optical systems, temperaturecalib...

  1. Optical characterization of niobium pentoxide thin films

    International Nuclear Information System (INIS)

    Pawlicka, A.

    1996-01-01

    Thin films of Nb 2 O 5 were obtained by sol-gel method using ultrasonic irradiation and deposited by dip-coating technique. After calcination at temperatures superior than 500 deg C these films (300 nm thick) were characterized by cyclic voltametry and cronoamperometry. The memory measurements, color efficiency, optical density as a function of wave number and applied potential were effectuated to determine their electrochromic properties. The study of electrochromic properties of these films shows that the insertion process of lithium is reversible and changes their coloration from transparent (T=80%) to dark blue (T=20%). (author)

  2. Flat or curved thin optical display panel

    Science.gov (United States)

    Veligdan, J.T.

    1995-01-10

    An optical panel includes a plurality of waveguides stacked together, with each waveguide having a first end and an opposite second end. The first ends collectively define a first face, and the second ends collectively define a second face of the panel. The second face is disposed at an acute face angle relative to the waveguides to provide a panel which is relatively thin compared to the height of the second face. In an exemplary embodiment for use in a projection TV, the first face is substantially smaller in height than the second face and receives a TV image, with the second face defining a screen for viewing the image enlarged. 7 figures.

  3. Optical conductivity of topological insulator thin films

    International Nuclear Information System (INIS)

    Li, L. L.; Xu, W.; Peeters, F. M.

    2015-01-01

    We present a detailed theoretical study on the optoelectronic properties of topological insulator thin film (TITFs). The k·p approach is employed to calculate the energy spectra and wave functions for both the bulk and surface states in the TITF. With these obtained results, the optical conductivities induced by different electronic transitions among the bulk and surface states are evaluated using the energy-balance equation derived from the Boltzmann equation. We find that for Bi 2 Se 3 -based TITFs, three characteristic regimes for the optical absorption can be observed. (i) In the low radiation frequency regime (photon energy ℏω<200 meV), the free-carrier absorption takes place due to intraband electronic transitions. An optical absorption window can be observed. (ii) In the intermediate radiation frequency regime (200<ℏω<300 meV), the optical absorption is induced mainly by interband electronic transitions from surface states in the valance band to surface states in the conduction band and an universal value σ 0 =e 2 /(8ℏ) for the optical conductivity can be obtained. (iii) In the high radiation frequency regime (ℏω>300 meV), the optical absorption can be achieved via interband electronic transitions from bulk and surface states in the valance band to bulk and surface states in the conduction band. A strong absorption peak can be observed. These interesting findings indicate that optical measurements can be applied to identify the energy regimes of bulk and surface states in the TITF

  4. synthesis and optical characterization of acid-doped polyaniline thin

    African Journals Online (AJOL)

    HOD

    SYNTHESIS AND OPTICAL CHARACTERIZATION OF ACID-DOPED. POLYANILINE THIN .... MATERIALS AND METHODS .... Characterization of Se Doped Polyaniline”,Current. Applied ... with Silver Nanoparticles”, Advances in Materials.

  5. Plasma Processing of Metallic and Semiconductor Thin Films in the Fisk Plasma Source

    Science.gov (United States)

    Lampkin, Gregory; Thomas, Edward, Jr.; Watson, Michael; Wallace, Kent; Chen, Henry; Burger, Arnold

    1998-01-01

    The use of plasmas to process materials has become widespread throughout the semiconductor industry. Plasmas are used to modify the morphology and chemistry of surfaces. We report on initial plasma processing experiments using the Fisk Plasma Source. Metallic and semiconductor thin films deposited on a silicon substrate have been exposed to argon plasmas. Results of microscopy and chemical analyses of processed materials are presented.

  6. Thin Films for X-ray Optics

    Science.gov (United States)

    Conley, Raymond

    Focusing x-rays with refraction requires an entire array of lens instead of a single element, each contributing a minute amount of focusing to the system. In contrast to their visible light counterparts, diffractive optics require a certain depth along the optical axis in order to provide sufficient phase shift. Mirrors reflect only at very shallow angles. In order to increase the angle of incidence, contribution from constructive interference within many layers needs to be collected. This requires a multilayer coating. Thin films have become a central ingredient for many x-ray optics due to the ease of which material composition and thickness can be controlled. Chapter 1 starts with a short introduction and survey of the field of x-ray optics. This begins with an explanation of reflective multilayers. Focusing optics are presented next, including mirrors, zone plates, refractive lenses, and multilayer Laue lens (MLL). The strengths and weaknesses of each "species" of optic are briefly discussed, alongside fabrication issues and the ultimate performance for each. Practical considerations on the use of thin-films for x-ray optics fabrication span a wide array of topics including material systems selection and instrumentation design. Sputter deposition is utilized exclusively for the work included herein because this method of thin-film deposition allows a wide array of deposition parameters to be controlled. This chapter also includes a short description of two deposition systems I have designed. Chapter 2 covers a small sampling of some of my work on reflective multilayers, and outlines two of the deposition systems I have designed and built at the Advanced Photon Source. A three-stripe double multilayer monochromator is presented as a case study in order to detail specifications, fabrication, and performance of this prolific breed of x-ray optics. The APS Rotary Deposition System was the first deposition system in the world designed specifically for multilayer

  7. Optical modeling and simulation of thin-film photovoltaic devices

    CERN Document Server

    Krc, Janez

    2013-01-01

    In wafer-based and thin-film photovoltaic (PV) devices, the management of light is a crucial aspect of optimization since trapping sunlight in active parts of PV devices is essential for efficient energy conversions. Optical modeling and simulation enable efficient analysis and optimization of the optical situation in optoelectronic and PV devices. Optical Modeling and Simulation of Thin-Film Photovoltaic Devices provides readers with a thorough guide to performing optical modeling and simulations of thin-film solar cells and PV modules. It offers insight on examples of existing optical models

  8. Modelling of new generation plasma optical devices

    Directory of Open Access Journals (Sweden)

    Litovko Irina V.

    2016-06-01

    Full Text Available The paper presents new generation plasma optical devices based on the electrostatic plasma lens configuration that opens a novel attractive possibility for effective high-tech practical applications. Original approaches to use of plasma accelerators with closed electron drift and open walls for the creation of a cost-effective low-maintenance plasma lens with positive space charge and possible application for low-cost, low-energy rocket engine are described. The preliminary experimental, theoretical and simulation results are presented. It is noted that the presented plasma devices are attractive for many different applications in the state-of-the-art vacuum-plasma processing.

  9. Electroform/Plasma-Spray Laminates for X-Ray Optics

    Science.gov (United States)

    Ulmer, Melville P.; Graham, Michael; Vaynman, Semyon

    2007-01-01

    Electroform/plasma-spray laminates have shown promise as lightweight, strong, low-thermal-expansion components for xray optics. The basic idea is to exploit both (1) the well-established art of fabrication of optical components by replication and (2) plasma spraying as a means of reinforcing a thin replica optic with one or more backing layer(s) having tailorable thermomechanical properties. In x-ray optics as in other applications, replication reduces the time and cost of fabrication because grinding and polishing can be limited to a few thick masters, from which many lightweight replicas can thereafter be made. The first step in the fabrication of a component of the type in question is to make a replica optic by electroforming a thin layer of nickel on a master. Through proper control of the electroforming process conditions, it is possible to minimize residual stress and, hence, to minimize distortion in the replica. Next, a powder comprising ceramic particles coated with a metal compatible with the electroformed nickel is plasma-sprayed onto the backside of the nickel replica. Then through several repetitions and variations of the preceding steps or perhaps a small compressive stress, alternating layers of electroformed nickel and plasma-sprayed metal-coated ceramic powder are deposited. The thicknesses of the layers and the composition of the metal-coated ceramic powder are chosen to optimize the strength, areal mass density, and toughness of the finished component. An important benefit of using both electroforming and plasma spraying is the possibility of balancing stresses to a minimum level, which could be zero or perhaps a small net compressive stress designed to enhance the function of the component in its intended application.

  10. Thermal conductivities of thin, sputtered optical films

    International Nuclear Information System (INIS)

    Henager, C.H. Jr.; Pawlewicz, W.T.

    1991-05-01

    The normal component of the thin film thermal conductivity has been measured for the first time for several advanced sputtered optical materials. Included are data for single layers of boron nitride (BN), aluminum nitride (AIN), silicon aluminum nitride (Si-Al-N), silicon aluminum oxynitride (Si-Al-O-N), silicon carbide (SiC), and for dielectric-enhanced metal reflectors of the form Al(SiO 2 /Si 3 N 4 ) n and Al(Al 2 O 3 /AIN) n . Sputtered films of more conventional materials like SiO 2 , Al 2 O 3 , Ta 2 O 5 , Ti, and Si have also been measured. The data show that thin film thermal conductivities are typically 10 to 100 times lower than conductivities for the same materials in bulk form. Structural disorder in the amorphous or very fine-grained films appears to account for most of the conductivity difference. Conclusive evidence for a film/substrate interface contribution is presented

  11. Structural, optical and mechanical properties of thin diamond and silicon carbide layers grown by low pressure microwave linear antenna plasma enhanced chemical vapour deposition

    Czech Academy of Sciences Publication Activity Database

    Taylor, Andrew; Drahokoupil, Jan; Fekete, Ladislav; Klimša, Ladislav; Kopeček, Jaromír; Purkrt, Adam; Remeš, Zdeněk; Čtvrtlík, Radim; Tomáštík, Jan; Frank, Otakar; Janíček, P.; Mistrík, J.; Mortet, Vincent

    2016-01-01

    Roč. 69, Oct (2016), s. 13-18 ISSN 0925-9635 R&D Projects: GA MŠk LO1409; GA TA ČR TA03010743; GA ČR GA13-31783S; GA MŠk(CZ) LD14011; GA MŠk LM2015088 Grant - others:FUNBIO(XE) CZ.2.16/3.1.00/21568; AV ČR(CZ) Fellowship J. E. Purkyně Institutional support: RVO:68378271 ; RVO:61388955 Keywords : diamond * silicon carbide * adherence * mechanical properties * optical properties Subject RIV: BM - Solid Matter Physics ; Magnetism; CG - Electrochemistry (UFCH-W) Impact factor: 2.561, year: 2016

  12. High-density plasma etching characteristics of indium-gallium-zinc oxide thin films in CF4/Ar plasma

    International Nuclear Information System (INIS)

    Joo, Young-Hee; Kim, Chang-Il

    2015-01-01

    We investigated the etching process of indium-gallium-zinc oxide (IGZO) thin films in an inductively coupled plasma system. The dry etching characteristics of the IGZO thin films were studied by varying the CF 4 /Ar gas mixing ratio, RF power, DC-bias voltage, and process pressure. We determined the following optimized process conditions: an RF power of 700 W, a DC-bias voltage of − 150 V, and a process pressure of 2 Pa. A maximum etch rate of 25.63 nm/min for the IGZO thin films was achieved in a plasma with CF 4 /Ar(= 25:75), and the selectivity of IGZO to Al and TiN was found to be 1.3 and 0.7, respectively. We determined the ionic composition of the CF 4 /Ar plasma using optical emission spectroscopy. Analysis of chemical reactions at the IGZO thin film surfaces was performed using X-ray photoelectron spectroscopy. - Highlights: • IGZO thin film was etched by CF 4 /Ar plasma as a function of gas mixing ratio. • IGZO bonds were broken Ar + sputtering and then reacted with the C-F x radicals. • The physical sputtering is dominant in etch control compared with chemical etching

  13. Compressing and focusing a short laser pulse by a thin plasma lens

    International Nuclear Information System (INIS)

    Ren, C.; Duda, B. J.; Hemker, R. G.; Mori, W. B.; Katsouleas, T.; Antonsen, T. M.; Mora, P.

    2001-01-01

    We consider the possibility of using a thin plasma slab as an optical element to both focus and compress an intense laser pulse. By thin we mean that the focal length is larger than the lens thickness. We derive analytic formulas for the spot size and pulse length evolution of a short laser pulse propagating through a thin uniform plasma lens. The formulas are compared to simulation results from two types of particle-in-cell code. The simulations give a greater final spot size and a shorter focal length than the analytic formulas. The difference arises from spherical aberrations in the lens which lead to the generation of higher-order vacuum Gaussian modes. The simulations also show that Raman side scattering can develop. A thin lens experiment could provide unequivocal evidence of relativistic self-focusing

  14. Optical properties of dense plasmas

    International Nuclear Information System (INIS)

    Guenther, S.

    1996-05-01

    The following topics were dealt with: Stellar spectra and stellar atmospheres, spectrocopic methods in the plasma diagnostic, Green function method, influence of charged plasma particles on the line profile, Storer-Strahler interaction, dynamic screening effects, line profile shift and asymmetry, collective plasma excitations, ion dynamic effects on line profiles

  15. Optical fibres for fusion plasma diagnostics systems

    International Nuclear Information System (INIS)

    Brichard, B.

    2005-01-01

    The condition to achieve and maintain the ignition of a thermonuclear fusion plasma ignition calls for the construction of a large scale fusion reactor, namely ITER. This reactor is designed to deliver an average fusion power of 500 MW. The burning of fusion plasma at such high power level will release a tremendous amount of energy in the form of particle fluxes and ionising radiation. This energy release, primarily absorbed by the plasma facing components, can significantly degrade the performances of the plasma diagnostic equipment surrounding the machine. To ensure a correct operation of the Tokamak we need to develop highly radiation-resistance devices. In plasma diagnostic systems, optical fibre is viewed as a convenient tool to transport light from the plasma edge to the diagnostic area. Radiation affects the optical performances of the fibre mainly by the occurrence of radiation-induced absorption and luminescence. Both effects degrade the light signal used for plasma diagnostic. SCK-CEN is currently assessing radiation-resistant glasses for optical fibres and is developing the associated qualification procedure. The main objectives of this study were to increase the lifetime of optical components in high radiation background and to develop a radiation resistance optical fibre capable to operate in the radiation background of ITER

  16. Evaluating optical hazards from plasma arc cutting.

    Science.gov (United States)

    Glassford, Eric; Burr, Gregory

    2018-01-01

    The Health Hazard Evaluation Program of the National Institute for Occupational Safety and Health evaluated a steel building materials manufacturer. The employer requested the evaluation because of concerns about optical radiation hazards from a plasma arc cutting system and the need to clarify eye protection requirements for plasma operators, other employees, and visitors. The strength of the ultraviolet radiation, visible radiation (light), and infrared radiation generated by the plasma arc cutter was measured at various distances from the source and at different operating amperages. Investigators also observed employees performing the plasma arc cutting. Optical radiation above safe levels for the unprotected eyes in the ultraviolet-C, ultraviolet-B, and visible light ranges were found during plasma arc cutting. In contrast, infrared and ultraviolet-A radiation levels during plasma arc cutting were similar to background levels. The highest non-ionizing radiation exposures occurred when no welding curtains were used. A plasma arc welding curtain in place did not eliminate optical radiation hazards to the plasma arc operator or to nearby employees. In most instances, the measured intensities for visible light, UV-C, and UV-B resulted in welding shade lens numbers that were lower than those stipulated in the OSHA Filter Lenses for Protection Against Radiant Energy table in 29 CFR 1910.133(a)(5). [1] Investigators recommended using a welding curtain that enclosed the plasma arc, posting optical radiation warning signs in the plasma arc cutter area, installing audible or visual warning cues when the plasma arc cutter was operating, and using welding shades that covered the plasma arc cutter operator's face to protect skin from ultraviolet radiation hazards.

  17. Optical coherence techniques for plasma doppler spectroscopy

    International Nuclear Information System (INIS)

    Howard, J.; Michael, C.; Glass, F.; Cheetham, A.D.

    2000-01-01

    A new electro-optically Modulated Optical Solid-State (MOSS) interferometer has been constructed for measurement of the low order spectral moments of line emission from optically thin radiant media. The instrument, which is based on the principle of the Fourier transform spectrometer, has high etendue and is rugged, compact and inexpensive. By employing electro-optical path-length modulation techniques, the spectral information is transferred to the temporal frequency domain and can be obtained using a single photodetector. Specifically, the zeroth moment (brightness) is given by the average signal level, the first moment (shift) by the modulation phase and the second moment (line width) by the modulation amplitude. (author)

  18. Optical diagnostics of atmospheric pressure air plasmas

    International Nuclear Information System (INIS)

    Laux, C O; Spence, T G; Kruger, C H; Zare, R N

    2003-01-01

    Atmospheric pressure air plasmas are often thought to be in local thermodynamic equilibrium owing to fast interspecies collisional exchange at high pressure. This assumption cannot be relied upon, particularly with respect to optical diagnostics. Velocity gradients in flowing plasmas and/or elevated electron temperatures created by electrical discharges can result in large departures from chemical and thermal equilibrium. This paper reviews diagnostic techniques based on optical emission spectroscopy and cavity ring-down spectroscopy that we have found useful for making temperature and concentration measurements in atmospheric pressure plasmas under conditions ranging from thermal and chemical equilibrium to thermochemical nonequilibrium

  19. A new lithography of functional plasma polymerized thin films

    International Nuclear Information System (INIS)

    Kim, Sung-O

    2001-01-01

    The preparation of the resist for the vacuum lithography was carried out by plasma polymerization. The resist manufactured by plasma polymerization is a monomer produced by MMA (Methyl methacrylate). The functional groups of MMA appeared in the PPMMA (Plasma Polymerized Methyl methacrylate) as well, and this was confirmed through an analysis using FT-IR. The polymerization rate increased as a function of the plasma power and decreased as a function of the system pressure. The sensitivity and contrast of the plasma polymerized thin films were 15 μC/cm2 and 4.3 respectively. The size of the pattern manufactured by Vacuum Lithography using the plasma polymerized thin films was 100 nm

  20. Optics and Plasma Research Department annual progress report for 2004

    DEFF Research Database (Denmark)

    Bindslev, Henrik; Lynov, Jens-Peter; Pedersen, C.

    2005-01-01

    The Optics and Plasma Research Department performs basic and applied research within three scientific programmes: (1) laser systems and optical materials, (2) optical diagnostics and information processing and (3) plasma physics and technology. Thedepartment has core competencies in optical sensors......, optical materials, biophotonics, fusion plasma physics, and industrial plasma technology. The department employs key technologies in micro- and nanotechnology for optical systems, temperaturecalibration, and infrared measurement techniques. The research is supported by several EU programmes, including...

  1. Effect of nitrogen flow rate on structural, morphological and optical properties of In-rich In{sub x}Al{sub 1−x}N thin films grown by plasma-assisted dual source reactive evaporation

    Energy Technology Data Exchange (ETDEWEB)

    Alizadeh, M., E-mail: alizadeh_kozerash@yahoo.com [Low Dimensional Materials Research Centre (LDMRC), Department of Physics, Faculty of Science, University of Malaya, 50603 Kuala Lumpur (Malaysia); Ganesh, V.; Goh, B.T. [Low Dimensional Materials Research Centre (LDMRC), Department of Physics, Faculty of Science, University of Malaya, 50603 Kuala Lumpur (Malaysia); Dee, C.F.; Mohmad, A.R. [Institute of Microengineering and Nanoelectronics (IMEN), Universiti Kebangsaan Malaysia, Bangi, Selangor (Malaysia); Rahman, S.A., E-mail: saadah@um.edu.my [Low Dimensional Materials Research Centre (LDMRC), Department of Physics, Faculty of Science, University of Malaya, 50603 Kuala Lumpur (Malaysia)

    2016-08-15

    Highlights: • In-rich In{sub x}Al{sub 1−x}N films were grown by Plasma-aided reactive evaporation. • Effect of nitrogen flow rate on the films properties was investigated. • The band gap of the films was varied from 1.17 to 0.90 eV. • By increasing N{sub 2} flow rate the In{sub x}Al{sub 1−x}N films tend to turn into amorphous state. • At higher N{sub 2} flow rate agglomeration of the particles is highly enhanced. - Abstract: In-rich In{sub x}Al{sub 1−x}N thin films were deposited on quartz substrate at various nitrogen flow rates by plasma-assisted dual source reactive evaporation technique. The elemental composition, surface morphology, structural and optical properties of the films were investigated by X-ray photoelectron spectroscopy (XPS), field emission scanning electron microscopy (FESEM), Raman spectroscopy, X-ray diffraction (XRD), UV–vis spectrophotometer and photoluminescence (PL) measurements. XPS results revealed that the indium composition (x) of the In{sub x}Al{sub 1−x}N films increases from 0.90 to 0.97 as the nitrogen flow rate is increased from 40 to 100 sccm, respectively. FESEM images of the surface and cross-sectional microstructure of the In{sub x}Al{sub 1−x}N films showed that by increasing the N{sub 2} flow rate, the grown particles are highly agglomerated. Raman and XRD results indicated that by increasing nitrogen flow rate the In-rich In{sub x}Al{sub 1−x}N films tend to turn into amorphous state. It was found that band gap energy of the films are in the range of 0.90–1.17 eV which is desirable for the application of full spectra solar cells.

  2. Optical and electrical properties of chemical bath deposited cobalt sulphide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Govindasamy, Geetha [R& D Centre, Bharathiar University, Coimbatore (India); Murugasen, Priya, E-mail: priyamurugasen15@gmail.com [Department of Physics, Saveetha Engineering, Chennai, Tamil Nadu (India); Sagadevan, Suresh [Department of Physics, AMET University, Chennai, Tamil Nadu (India)

    2017-01-15

    Cobalt sulphide (CoS) thin films were synthesized using the Chemical Bath Deposition (CBD) technique. X-ray diffraction (XRD) analysis was used to study the structure and the crystallite size of CoS thin film. Scanning Electron Microscope (SEM) studies reveal the surface morphology of these films. The optical properties of the CoS thin films were determined using UV-Visible absorption spectrum. The optical band gap of the thin films was found to be 1.6 eV. Optical constants such as the refractive index, the extinction coefficient and the electric susceptibility were determined. The dielectric studies were carried out at different frequencies and at different temperatures for the prepared CoS thin films. In addition, the plasma energy of the valence electron, Penn gap or average energy gap, the Fermi energy and electronic polarizability of the thin films were determined. The AC electrical conductivity measurement was also carried out for the thin films. The activation energy was determined by using DC electrical conductivity measurement. (author)

  3. Thin Film Solar Cells and their Optical Properties

    Directory of Open Access Journals (Sweden)

    Stanislav Jurecka

    2006-01-01

    Full Text Available In this work we report on the optical parameters of the semiconductor thin film for solar cell applications determination. The method is based on the dynamical modeling of the spectral reflectance function combined with the stochastic optimization of the initial reflectance model estimation. The spectral dependency of the thin film optical parameters computations is based on the optical transitions modeling. The combination of the dynamical modeling and the stochastic optimization of the initial theoretical model estimation enable comfortable analysis of the spectral dependencies of the optical parameters and incorporation of the microstructure effects on the solar cell properties. The results of the optical parameters ofthe i-a-Si thin film determination are presented.

  4. Complete plasma dropouts at Vela satellites during thinning of the plasma sheet

    International Nuclear Information System (INIS)

    Lui, A.T.Y.; Hones, E.W. Jr.; Venkatesan, D.; Akasofu, S.; Bame, S.J.

    1975-01-01

    Five satellite years of Vela data are examined for plasma sheet thinnings. Complete proton disappearances (plasma dropouts) are the main subject here. During such times, the Vela satellite is temporarily in the high-latitude tail lobe. The distribution of such plasma dropouts within the magnetotail suggests that the semithickness of the plasma sheet near midnight seldom reaches less than 1 R/sub E/ during substorms and that the dawn and dusk portions of the plasma sheet remain thicker than the midnight portion. But it is also shown that the plasma sheet occasionally becomes very thin near the dusk magnetopause. No such severe thinnings of the plasma sheet are found near the dawn magnetopause. Plasma dropouts can occur regardless of the sign of the Z component of the IMF, but their frequency of occurrence seems to be greater when the Z component is negative.Three plasma dropouts which occurred in the midnight sector at unusually large distances from the estimated position of the neutral sheet were observed during geomagnetic storms. It is likely that the midnight sector of the plasma sheet can become very thick (approx.18 R/sub E/) at certain times during the main phase of storms. Detailed measurements in the plasma sheet were obtained near the beginning of a geomagnetic storm whose sc triggered a substorm. A compression of the plasma sheet at X/sub SM/approx. =-15 R/sub E/ occurred about 10 min after the sc onset at the earth and about 5 min after the start of plasma sheet thinning associated with the sc-related substorm. If compression-thinning of the plasma sheet initiated this substorm, the triggering action must have occurred earthward of X/sub SM/approx. =-15 R/sub E/

  5. Measurements of recombination coefficient of hydrogen atoms on plasma deposited thin films

    International Nuclear Information System (INIS)

    Drenik, A.; Vesel, A.; Mozetic, M.

    2006-01-01

    We have performed experiments in plasma afterglow in order to determine the recombination coefficients of plasma deposited thin films of tungsten and graphite. Plasma deposited films rather than bulk material were used in order to more closely emulate surface structure of plasma-facing material deposits in fusion reactors. We have also determined the recombination coefficient of 85250 borosilicate glass and Teflon. Plasma was created by means of a radio frequency generator in a mixture of argon and hydrogen at the pressures between 60 Pa and 280 Pa. The degree of dissociation of hydrogen molecules was found to be between 0.1 and 1. The H-atom density was measured by Fiber Optic Catalytic Probe. The recombination coefficient was determined by measuring the axial profile of the H-atom density and using Smith's side arm diffusion model. (author)

  6. Optical fibre sensing of plasmas

    Energy Technology Data Exchange (ETDEWEB)

    Woolsey, G.A.; Scelsi, G.B. [School of Physical Sciences and Engineering, Univ. of New England, Armidale, NSW (Australia)

    2000-03-01

    The progress of optical fiber technology for communications has induced an interest in, among others, the sensing of a wide range of physical, and chemical quantities. Any application of optical fibers that are crucial for communication are significant for sensing, e.g. small dimension, insulating materials, immunity to high voltage field etc. In the present paper basic points of optical fiber sensing are summarized. It is noted optical fiber sensors come in two forms, intrinsic and extrinsic. In the former the fiber itself works as sensing element, in addition to data transmission lines. In an intrinsic sensor, a single fiber transmits the light from the source to the detector and the light is modulated while it is in the fiber. On the other hand, in the extrinsic sensor, the light leaves the input fiber to be modulated before being collected by the second output fiber. Characteristic of the light that can be modulated are amplitude, phase, polarization, and wavelength. The paper describes the modulation in some details. (author)

  7. Optical fibre sensing of plasmas

    International Nuclear Information System (INIS)

    Woolsey, G.A.; Scelsi, G.B.

    2000-01-01

    The progress of optical fiber technology for communications has induced an interest in, among others, the sensing of a wide range of physical, and chemical quantities. Any application of optical fibers that are crucial for communication are significant for sensing, e.g. small dimension, insulating materials, immunity to high voltage field etc. In the present paper basic points of optical fiber sensing are summarized. It is noted optical fiber sensors come in two forms, intrinsic and extrinsic. In the former the fiber itself works as sensing element, in addition to data transmission lines. In an intrinsic sensor, a single fiber transmits the light from the source to the detector and the light is modulated while it is in the fiber. On the other hand, in the extrinsic sensor, the light leaves the input fiber to be modulated before being collected by the second output fiber. Characteristic of the light that can be modulated are amplitude, phase, polarization, and wavelength. The paper describes the modulation in some details. (author)

  8. Thin film plasma coatings from dielectric free-flowing materials

    International Nuclear Information System (INIS)

    Timofeeva, L.A.; Katrich, S.A.; Solntsev, L.A.

    1994-01-01

    Fabrication of thin film plasma coatings from insulating free-flowing materials is considered. Molybdenum-tart ammonium coating of 3...5 μ thickness deposited on glassy carbon, aluminium, silicon, nickel, cast iron and steel substrates in 'Bulat-ZT' machine using insulating free-flowing materials cathod was found to form due to adsorption, absorption and dissuasion processes. The use of insulating free-flowing materials coatings allow to exclude pure metals cathods in plasma-plating process

  9. Plasma geometric optics analysis and computation

    International Nuclear Information System (INIS)

    Smith, T.M.

    1983-01-01

    Important practical applications in the generation, manipulation, and diagnosis of laboratory thermonuclear plasmas have created a need for elaborate computational capabilities in the study of high frequency wave propagation in plasmas. A reduced description of such waves suitable for digital computation is provided by the theory of plasma geometric optics. The existing theory is beset by a variety of special cases in which the straightforward analytical approach fails, and has been formulated with little attention to problems of numerical implementation of that analysis. The standard field equations are derived for the first time from kinetic theory. A discussion of certain terms previously, and erroneously, omitted from the expansion of the plasma constitutive relation is given. A powerful but little known computational prescription for determining the geometric optics field in the neighborhood of caustic singularities is rigorously developed, and a boundary layer analysis for the asymptotic matching of the plasma geometric optics field across caustic singularities is performed for the first time with considerable generality. A proper treatment of birefringence is detailed, wherein a breakdown of the fundamental perturbation theory is identified and circumvented. A general ray tracing computer code suitable for applications to radiation heating and diagnostic problems is presented and described

  10. Plasma monitoring and PECVD process control in thin film silicon-based solar cell manufacturing

    Directory of Open Access Journals (Sweden)

    Gabriel Onno

    2014-02-01

    Full Text Available A key process in thin film silicon-based solar cell manufacturing is plasma enhanced chemical vapor deposition (PECVD of the active layers. The deposition process can be monitored in situ by plasma diagnostics. Three types of complementary diagnostics, namely optical emission spectroscopy, mass spectrometry and non-linear extended electron dynamics are applied to an industrial-type PECVD reactor. We investigated the influence of substrate and chamber wall temperature and chamber history on the PECVD process. The impact of chamber wall conditioning on the solar cell performance is demonstrated.

  11. Magneto-optical effect in Mn-Sb thin films

    International Nuclear Information System (INIS)

    Attaran, E.; Sadabadi, M.

    2003-01-01

    The magneto-optic Kerr and Faraday effect of Mn-Sb thin films have been studied. The single and multilayer of this film have grown on glass substrate by evaporation. The optical rotation of linear polarized light has been measured by an optical hysteresis plotter in a I/O converter amplifier circuit. Our results indicate a polar Kerr rotation up to 0.5 degree and in a double Mn S b this rotation research to maximum

  12. Plasma mirrors for ultrahigh-intensity optics

    International Nuclear Information System (INIS)

    Thaury, C.; Quere, F.; Levy, A.; Ceccotti, T.; Monot, P.; Bougeard, M.; Reau, F.; D'Oliveira, P.; Martin, PH.; Geindre, J.P.; Audebert, P.; Marjoribanks, R.; Marjoribanks, R.

    2007-01-01

    Specular reflection is one of the most fundamental processes of optics. At moderate light intensities generated by conventional light sources this process is well understood. But at those capable of being produced by modern ultrahigh-intensity lasers, many new and potentially useful phenomena arise. When a pulse from such a laser hits an optically polished surface, it generates a dense plasma that itself acts as a mirror, known as a plasma mirror (PM). PMs do not just reflect the remainder of the incident beam, but can act as active optical elements. Using a set of three consecutive PMs in different regimes, we significantly improve the temporal contrast of femtosecond pulses, and demonstrate that high-order harmonics of the laser frequency can be generated through two distinct mechanisms. A better understanding of these processes should aid the development of laser-driven atto-second sources for use in fields from materials science to molecular biology. (authors)

  13. Plasma mirrors for ultrahigh-intensity optics

    Energy Technology Data Exchange (ETDEWEB)

    Thaury, C; Quere, F; Levy, A; Ceccotti, T; Monot, P; Bougeard, M; Reau, F; D' Oliveira, P; Martin, PH [CEA, DSM, DRECAM, Serv Photons Atomes and Mol, F-91191 Gif Sur Yvette, (France); Geindre, J P; Audebert, P [Ecole Polytech, CNRS, Lab Utilisat Lasers Inst, F-91128 Palaiseau, (France); Marjoribanks, R [Univ Toronto, Dept Phys, Toronto, ON M5S 1A7, (Canada); Marjoribanks, R [Univ Toronto, Inst Opt Sci, Toronto, ON M5S 1A7, (Canada)

    2007-07-01

    Specular reflection is one of the most fundamental processes of optics. At moderate light intensities generated by conventional light sources this process is well understood. But at those capable of being produced by modern ultrahigh-intensity lasers, many new and potentially useful phenomena arise. When a pulse from such a laser hits an optically polished surface, it generates a dense plasma that itself acts as a mirror, known as a plasma mirror (PM). PMs do not just reflect the remainder of the incident beam, but can act as active optical elements. Using a set of three consecutive PMs in different regimes, we significantly improve the temporal contrast of femtosecond pulses, and demonstrate that high-order harmonics of the laser frequency can be generated through two distinct mechanisms. A better understanding of these processes should aid the development of laser-driven atto-second sources for use in fields from materials science to molecular biology. (authors)

  14. Hydrodynamic optical-field-ionized plasma channels

    Science.gov (United States)

    Shalloo, R. J.; Arran, C.; Corner, L.; Holloway, J.; Jonnerby, J.; Walczak, R.; Milchberg, H. M.; Hooker, S. M.

    2018-05-01

    We present experiments and numerical simulations which demonstrate that fully ionized, low-density plasma channels could be formed by hydrodynamic expansion of plasma columns produced by optical field ionization. Simulations of the hydrodynamic expansion of plasma columns formed in hydrogen by an axicon lens show the generation of 200 mm long plasma channels with axial densities of order ne(0 ) =1 ×1017cm-3 and lowest-order modes of spot size WM≈40 μ m . These simulations show that the laser energy required to generate the channels is modest: of order 1 mJ per centimeter of channel. The simulations are confirmed by experiments with a spherical lens which show the formation of short plasma channels with 1.5 ×1017cm-3≲ne(0 ) ≲1 ×1018cm-3 and 61 μ m ≳WM≳33 μ m . Low-density plasma channels of this type would appear to be well suited as multi-GeV laser-plasma accelerator stages capable of long-term operation at high pulse repetition rates.

  15. Properties of CuS thin films treated in air plasma

    International Nuclear Information System (INIS)

    Rodriguez-Lazcano, Y.; Martinez, H.; Calixto-Rodriguez, M.; Nunez Rodriguez, A.

    2009-01-01

    Copper sulfide thin films were grown by chemical deposition and post treated in air plasma during 20 min. Air plasma was generated by alternating current discharge at a pressure of 4 x 10 2 Pa. The power discharge was maintained at an output of 220 V and a current of 0.2 A. Thermal annealing at 300 o C was performed for comparison. X-ray diffraction shows that plasma treatment results in phase transformation of Cu 39 S 28 (as grown) to CuS (treated by plasma). The copper lost is confirmed by X-ray fluorescence. No significant change in the optical band gap was observed due to plasma action. In addition, the electrical conductivity increases in one order of magnitude. On the other hand, the samples under plasma condition show a parallel growth to the substrate and an increase in the surface uniformity. The plasma etching removes copper due to its affinity with oxygen to form CuO, as is corroborated by optical emission spectroscopy.

  16. The role of Ar plasma treatment in generating oxygen vacancies in indium tin oxide thin films prepared by the sol-gel process

    Energy Technology Data Exchange (ETDEWEB)

    Hwang, Deuk-Kyu [Department of Materials Science and Engineering, Yonsei University, 50 Yonsei-ro, Seoul, 03722 (Korea, Republic of); Misra, Mirnmoy; Lee, Ye-Eun [Department of BioNano Technology, Gachon University, 1342 Seong-nam dae-ro, Seong-nam si, Gyeonggi-do, 13120 (Korea, Republic of); Baek, Sung-Doo [Department of Materials Science and Engineering, Yonsei University, 50 Yonsei-ro, Seoul, 03722 (Korea, Republic of); Myoung, Jae-Min, E-mail: jmmyoung@yonsei.ac.kr [Department of Materials Science and Engineering, Yonsei University, 50 Yonsei-ro, Seoul, 03722 (Korea, Republic of); Lee, Tae Il, E-mail: t2.lee77@gachon.ac.kr [Department of BioNano Technology, Gachon University, 1342 Seong-nam dae-ro, Seong-nam si, Gyeonggi-do, 13120 (Korea, Republic of)

    2017-05-31

    Highlights: • Indium tin oxide thin film with about 41 nm thickness was obtained by the sol-gel process. • Thin film exhibited low resistivity. • Sheet resistance of thin film decreases with Ar plasma treatment time. • Ar plasma treatment on thin film does not alter the crystal structure and optical properties of the ITO thin-film. • There is no significant change in oxygen vacancies after 20 min of plasma treatment. - Abstract: Argon (Ar) plasma treatment was carried out to reduce the sheet resistance of indium tin oxide (ITO) thin films. The Ar plasma treatment did not cause any significant changes to the crystal structure, surface morphology, or optical properties of the ITO thin films. However, an X-ray photoelectron spectroscopy study confirmed that the concentration of oxygen vacancies in the film dramatically increased with the plasma treatment time. Thus, we concluded that the decrease in the sheet resistance was caused by the increase in the oxygen vacancy concentration in the film. Furthermore, to verify how the concentration of oxygen vacancies in the film increased with the Ar plasma treatment time, cumulative and continuous plasma treatments were conducted. The oxygen vacancies were found to be created by surface heating via the outward thermal diffusion of oxygen atoms from inside the film.

  17. Optics and Plasma Research Department. Annual progress report for 2004

    International Nuclear Information System (INIS)

    Bindslev, H.; Lynov, J.P.; Pedersen, C.; Petersen, P.M.; Skaarup, B.

    2005-03-01

    The Optics and Plasma Research Department performs basic and applied research within three scientific programmes: (1) laser systems and optical materials, (2) optical diagnostics and information processing and (3) plasma physics and technology. The department has core competencies in optical sensors, optical materials, biophotonics, fusion plasma physics, and industrial plasma technology. The department employs key technologies in micro- and nanotechnology for optical systems, temperature calibration, and infrared measurement techniques. The research is supported by several EU programmes, including EURATOM, by Danish research councils and by industry. A summary of the activities in 2004 is presented. (au)

  18. Tunable thin-film optical filters for hyperspectral microscopy

    Science.gov (United States)

    Favreau, Peter F.; Rich, Thomas C.; Prabhat, Prashant; Leavesley, Silas J.

    2013-02-01

    Hyperspectral imaging was originally developed for use in remote sensing applications. More recently, it has been applied to biological imaging systems, such as fluorescence microscopes. The ability to distinguish molecules based on spectral differences has been especially advantageous for identifying fluorophores in highly autofluorescent tissues. A key component of hyperspectral imaging systems is wavelength filtering. Each filtering technology used for hyperspectral imaging has corresponding advantages and disadvantages. Recently, a new optical filtering technology has been developed that uses multi-layered thin-film optical filters that can be rotated, with respect to incident light, to control the center wavelength of the pass-band. Compared to the majority of tunable filter technologies, these filters have superior optical performance including greater than 90% transmission, steep spectral edges and high out-of-band blocking. Hence, tunable thin-film optical filters present optical characteristics that may make them well-suited for many biological spectral imaging applications. An array of tunable thin-film filters was implemented on an inverted fluorescence microscope (TE 2000, Nikon Instruments) to cover the full visible wavelength range. Images of a previously published model, GFP-expressing endothelial cells in the lung, were acquired using a charge-coupled device camera (Rolera EM-C2, Q-Imaging). This model sample presents fluorescently-labeled cells in a highly autofluorescent environment. Linear unmixing of hyperspectral images indicates that thin-film tunable filters provide equivalent spectral discrimination to our previous acousto-optic tunable filter-based approach, with increased signal-to-noise characteristics. Hence, tunable multi-layered thin film optical filters may provide greatly improved spectral filtering characteristics and therefore enable wider acceptance of hyperspectral widefield microscopy.

  19. Optical absorption in a thin nickel wire

    OpenAIRE

    INAGAKI, Takashi; Goudonnet, J.P.; ARAKAWA, E.T.

    1986-01-01

    Absorption of a 633-nm phonton in a cylindrical nickel wire with diameter 13 m was measured by a photoacoustic method as a function of angle of phonton incidence . A good photoacoustic signal was obtained with a 6-m W He-Ne laser as a light source without employing focusing optics. The absorption measured for p-polarized phontons was found to be in good agreement with geometrical optics calculation. For s-polarized light, however, significant excess absorption was found for >35.

  20. Optical absorption in a thin nickel wire

    International Nuclear Information System (INIS)

    Inagaki, T.; Goudonnet, J.P.; Arakawa, E.T.

    1986-01-01

    Absorption of a 633-nm photon in a cylindrical nickel wire with diameter 13 μm was measured by a photoacoustic method as a function of angle of photon incidence theta. A good photoacoustic signal was obtained with a 6-mW He-Ne laser as a light source without employing focusing optics. The absorption measured for p-polarized photons was found to be in good agreement with geometrical optics calculation. For s-polarized light, however, significant excess absorption was found for theta > 35 0

  1. Optical characterisation of thin film cadmium oxide prepared by a ...

    African Journals Online (AJOL)

    The optical transmission spectra of transparent conducting cadmium oxide (CdO) thin films deposited by a modified reactive evaporation process onto glass substrates have been measured. The interference fringes were used to calculate the refractive index, thickness variation, average thickness and absorption coefficient ...

  2. Ferrofluid thin films as optical gaussmeters proposed for field and ...

    Indian Academy of Sciences (India)

    Department of Physics, Cochin University of Science and Technology, Cochin 682 022, India ... Magnetic field induced laser transmission through these ... An optical gaussmeter can be formulated with these ferrofluid thin films with the help of an LDR, and a laser (a diode laser or a cheaper torch laser which gives a stream ...

  3. Optical and electrical properties of nickel xanthate thin films

    Indian Academy of Sciences (India)

    Administrator

    metal-xanthate thin films' production, nor their optical, electrical properties and .... vibration of –CH3 at 894 cm–1, (vii) the symmetric bend- ing vibration of C–O–C at 458 .... vity values are the two most important factors, affecting band width.

  4. Effect of ablation geometry on the dynamics, composition, and geometrical shape of thin film plasma

    Science.gov (United States)

    Mondal, Alamgir; Singh, R. K.; Kumar, Ajai

    2018-01-01

    The characteristics of plasma plume produced by front and back ablation of thin films have been investigated using fast imaging and optical emission spectroscopy. Ablation geometry dependence of the plume dynamics, its geometrical aspect and composition is emphasized. Also, the effect of an ambient environment and the beam diameter of an ablating laser on the front and back ablations is briefly discussed. Analysis of time resolved images and plasma parameters indicates that the energetic and spherical plasma formed by front ablation is strikingly different in comparison to the slow and nearly cylindrical plasma plume observed in the case of back ablation. Further shock formation, plume confinement, thermalization and validity of different expansion models in these two ablation geometries are also presented. The present study demonstrates the manipulation of kinetic energy, shape, ion/neutral compositions and directionality of the expanding plume by adjusting the experimental configuration, which is highly relevant to its utilization in various applications e.g., generation of energetic particles, tokamak edge plasma diagnostics, thin film deposition, etc.

  5. Genetic algorithm approach to thin film optical parameters determination

    International Nuclear Information System (INIS)

    Jurecka, S.; Jureckova, M.; Muellerova, J.

    2003-01-01

    Optical parameters of thin film are important for several optical and optoelectronic applications. In this work the genetic algorithm proposed to solve optical parameters of thin film values. The experimental reflectance is modelled by the Forouhi - Bloomer dispersion relations. The refractive index, the extinction coefficient and the film thickness are the unknown parameters in this model. Genetic algorithm use probabilistic examination of promissing areas of the parameter space. It creates a population of solutions based on the reflectance model and then operates on the population to evolve the best solution by using selection, crossover and mutation operators on the population individuals. The implementation of genetic algorithm method and the experimental results are described too (Authors)

  6. Inductively coupled hydrogen plasma processing of AZO thin films for heterojunction solar cell applications

    International Nuclear Information System (INIS)

    Zhou, H.P.; Xu, S.; Zhao, Z.; Xiang, Y.

    2014-01-01

    Highlights: • A high-density plasma reactor of inductively coupled plasma source is used in this work. • The conductivity and transmittance can be enhanced simultaneously in the hydrogen process. • The formation of additional donors and passivation due to the hydrogen plasma processing. • The photovoltaic improvement due to the improved AZO layer and hetero-interface quality in the solar cells. - Abstract: Al-doped ZnO (AZO) thin films deposited by means of RF magnetron sputtering were processed in a low frequency inductively coupled plasma of H 2 , aiming at heterojunction (HJ) solar cell applications. A variety of characterization results show that the hydrogen plasma processing exerts a significant influence on the microstructures, electrical and optical properties of the AZO films. The incorporation of hydrogen under the optimum treatment simultaneously promoted the transmittance and conductivity due to the hydrogen associated passivation effect on the native defects and the formation of shallow donors in the films, respectively. A p-type c-Si based HJ solar cell with a front AZO contact was also treated in as-generated non-equilibrium hydrogen plasma and the photovoltaic performance of the solar cell was prominently improved. The underlying mechanism was discussed in terms of the beneficial impacts of high-density hydrogen plasma on the properties of AZO itself and the hetero-interfaces involved in the HJ structure (interface defect and energy band configuration)

  7. Optical characteristics of a gallium laser plasma

    International Nuclear Information System (INIS)

    Shuaibov, A.K.; Shimon, L.L.; Dashchenko, A.I.; Shevera, I.V.; Chuchman, M.P.

    2001-01-01

    Results are presented from studies of the emission from an erosion gallium laser plasma at a moderate intensity (W = (1-5) x 10 8 W/cm 2 ) of a 1.06-μm laser radiation. It is shown that, under these conditions, the lower excited states of gallium atoms are populated most efficiently. Among the ions, only the most intense GaII lines are observed in the emission spectrum. The populations of GaI and GaII excited states are not related to direct electron excitation, but are determined by the recombination of gallium ions with slow electrons. The recombination times of GaIII and GaII ions in the core of the plasma jet are determined from the waveforms of emission in the GaII and GaI spectral lines and are equal to 10 and 140 ns, respectively. The results obtained are of interest for spectroscopic diagnostics of an erosion plasma produced from gallium-containing layered crystals during the laser deposition of thin films

  8. Remote plasma sputtering of indium tin oxide thin films for large area flexible electronics

    International Nuclear Information System (INIS)

    Yeadon, A.D.; Wakeham, S.J.; Brown, H.L.; Thwaites, M.J.; Whiting, M.J.; Baker, M.A.

    2011-01-01

    Indium tin oxide (ITO) thin films with a specific resistivity of 3.5 × 10 −4 Ω cm and average visible light transmission (VLT) of 90% have been reactively sputtered onto A4 Polyethylene terephthalate (PET), glass and silicon substrates using a remote plasma sputtering system. This system offers independent control of the plasma density and the target power enabling the effect of the plasma on ITO properties to be studied. Characterization of ITO on glass and silicon has shown that increasing the plasma density gives rise to a decrease in the specific resistivity and an increase in the optical band gap of the ITO films. Samples deposited at plasma powers of 1.5 kW, 2.0 kW and 2.5 kW and optimized oxygen flow rates exhibited specific resistivity values of 3.8 × 10 −4 Ω cm, 3.7 × 10 −4 Ω cm and 3.5 × 10 −4 Ω cm and optical gaps of 3.48 eV, 3.51 eV and 3.78 eV respectively. The increase in plasma density also influenced the crystalline texture and the VLT increased from 70 to 95%, indicating that more oxygen is being incorporated into the growing film. It has been shown that the remote plasma sputter technique can be used in an in-line process to produce uniform ITO coatings on PET with specific resistivities of between 3.5 × 10 −4 and 4.5 × 10 −4 Ω cm and optical transmission of greater than 85% over substrate widths of up to 30 cm.

  9. Plasma synthesis of rare earth doped integrated optical waveguides

    Energy Technology Data Exchange (ETDEWEB)

    Raoux, S.; Anders, S.; Yu, K.M.; Brown, I.G. [Lawrence Berkeley Lab., CA (United States); Ivanov, I.C. [Charles Evans & Associates, Redwood City, CA (United States)

    1995-03-01

    We describe a novel means for the production of optically active planar waveguides. The makes use of a low energy plasma deposition. Cathodic-arc-produced metal plasmas the metallic components of the films and gases are added to form compound films. Here we discuss the synthesis of Al{sub 2{minus}x}ER{sub x}O{sub 3} thin films. The erbium concentration (x) can vary from 0 to 100% and the thickness of the film can be from Angstroms to microns. In such material, at high active center concentration (x=l% to 20%), erbium ions give rise to room temperature 1.53{mu}m emission which has minimum loss in silica-based optical fibers. With this technique, multilayer integrated planar waveguide structures can be grown, such as Al{sub 2}O{sub 3}/Al{sub 2{minus}x}Er{sub x}O{sub 3}/Al{sub 2}O{sub 3}/Si, for example.

  10. Development of plasma bolometers using fiber-optic temperature sensors

    Energy Technology Data Exchange (ETDEWEB)

    Reinke, M. L., E-mail: reinkeml@ornl.gov [Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831 (United States); Han, M.; Liu, G. [University of Nebraska-Lincoln, Lincoln, Nebraska 68588 (United States); Eden, G. G. van [Dutch Institute for Fundamental Energy Research, De Zaale 20, 5612 AJ Eindhoven (Netherlands); Evenblij, R.; Haverdings, M. [Technobis, Pyrietstraat 2, 1812 SC Alkmaar (Netherlands); Stratton, B. C. [Princeton Plasma Physics Laboratory, P.O. Box 451, Princeton, New Jersey 08543 (United States)

    2016-11-15

    Measurements of radiated power in magnetically confined plasmas are important for exhaust studies in present experiments and expected to be a critical diagnostic for future fusion reactors. Resistive bolometer sensors have long been utilized in tokamaks and helical devices but suffer from electromagnetic interference (EMI). Results are shown from initial testing of a new bolometer concept based on fiber-optic temperature sensor technology. A small, 80 μm diameter, 200 μm long silicon pillar attached to the end of a single mode fiber-optic cable acts as a Fabry–Pérot cavity when broadband light, λ{sub o} ∼ 1550 nm, is transmitted along the fiber. Changes in temperature alter the optical path length of the cavity primarily through the thermo-optic effect, resulting in a shift of fringes reflected from the pillar detected using an I-MON 512 OEM spectrometer. While initially designed for use in liquids, this sensor has ideal properties for use as a plasma bolometer: a time constant, in air, of ∼150 ms, strong absorption in the spectral range of plasma emission, immunity to local EMI, and the ability to measure changes in temperature remotely. Its compact design offers unique opportunities for integration into the vacuum environment in places unsuitable for a resistive bolometer. Using a variable focus 5 mW, 405 nm, modulating laser, the signal to noise ratio versus power density of various bolometer technologies are directly compared, estimating the noise equivalent power density (NEPD). Present tests show the fiber-optic bolometer to have NEPD of 5-10 W/m{sup 2} when compared to those of the resistive bolometer which can achieve <0.5 W/m{sup 2} in the laboratory, but this can degrade to 1-2 W/m{sup 2} or worse when installed on a tokamak. Concepts are discussed to improve the signal to noise ratio of this new fiber-optic bolometer by reducing the pillar height and adding thin metallic coatings, along with improving the spectral resolution of the interrogator.

  11. Fast Industrial Inspection of Optical Thin Film Using Optical Coherence Tomography

    Directory of Open Access Journals (Sweden)

    Muhammad Faizan Shirazi

    2016-09-01

    Full Text Available An application of spectral domain optical coherence tomography (SD-OCT was demonstrated for a fast industrial inspection of an optical thin film panel. An optical thin film sample similar to a liquid crystal display (LCD panel was examined. Two identical SD-OCT systems were utilized for parallel scanning of a complete sample in half time. Dual OCT inspection heads were utilized for transverse (fast scanning, while a stable linear motorized translational stage was used for lateral (slow scanning. The cross-sectional and volumetric images of an optical thin film sample were acquired to detect the defects in glass and other layers that are difficult to observe using visual inspection methods. The rapid inspection enabled by this setup led to the early detection of product defects on the manufacturing line, resulting in a significant improvement in the quality assurance of industrial products.

  12. Optical constants and structural properties of thin gold films

    DEFF Research Database (Denmark)

    Yakubovsky, Dmitry I.; Arsenin, Aleksey V.; Stebunov, Yury V.

    2017-01-01

    We report a comprehensive experimental study of optical and electrical properties of thin polycrystalline gold films in a wide range of film thicknesses (from 20 to 200 nm). Our experimental results are supported by theoretical calculations based on the measured morphology of the fabricated gold...... rules for thin-film plasmonic and nanophotonic devices....... films. We demonstrate that the dielectric function of the metal is determined by its structural morphology. Although the fabrication process can be absolutely the same for different films, the dielectric function can strongly depend on the film thickness. Our studies show that the imaginary part...

  13. High-density plasma etching characteristics of indium-gallium-zinc oxide thin films in CF{sub 4}/Ar plasma

    Energy Technology Data Exchange (ETDEWEB)

    Joo, Young-Hee; Kim, Chang-Il

    2015-05-29

    We investigated the etching process of indium-gallium-zinc oxide (IGZO) thin films in an inductively coupled plasma system. The dry etching characteristics of the IGZO thin films were studied by varying the CF{sub 4}/Ar gas mixing ratio, RF power, DC-bias voltage, and process pressure. We determined the following optimized process conditions: an RF power of 700 W, a DC-bias voltage of − 150 V, and a process pressure of 2 Pa. A maximum etch rate of 25.63 nm/min for the IGZO thin films was achieved in a plasma with CF{sub 4}/Ar(= 25:75), and the selectivity of IGZO to Al and TiN was found to be 1.3 and 0.7, respectively. We determined the ionic composition of the CF{sub 4}/Ar plasma using optical emission spectroscopy. Analysis of chemical reactions at the IGZO thin film surfaces was performed using X-ray photoelectron spectroscopy. - Highlights: • IGZO thin film was etched by CF{sub 4}/Ar plasma as a function of gas mixing ratio. • IGZO bonds were broken Ar{sup +} sputtering and then reacted with the C-F{sub x} radicals. • The physical sputtering is dominant in etch control compared with chemical etching.

  14. An optical trap for relativistic plasma

    International Nuclear Information System (INIS)

    Zhang Ping; Saleh, Ned; Chen Shouyuan; Sheng Zhengming; Umstadter, Donald

    2003-01-01

    The first optical trap capable of confining relativistic electrons, with kinetic energy ≤350 keV was created by the interference of spatially and temporally overlapping terawatt power, 400 fs duration laser pulses (≤2.4x10 18 W/cm 2 ) in plasma. Analysis and computer simulation predicted that the plasma density was greatly modulated, reaching a peak density up to 10 times the background density (n e /n 0 ∼10) at the interference minima. Associated with this charge displacement, a direct-current electrostatic field of strength of ∼2x10 11 eV/m was excited. These predictions were confirmed experimentally by Thomson and Raman scattering diagnostics. Also confirmed were predictions that the electron density grating acted as a multi-layer mirror to transfer energy between the crossed laser beams, resulting in the power of the weaker laser beam being nearly 50% increased. Furthermore, it was predicted that the optical trap acted to heat electrons, increasing their temperature by two orders of magnitude. The experimental results showed that the number of high energy electrons accelerated along the direction of one of the laser beams was enhanced by a factor of 3 and electron temperature was increased ∼100 keV as compared with single-beam illumination

  15. The physics of thin film optical spectra an introduction

    CERN Document Server

    Stenzel, Olaf

    2016-01-01

    The book bridges the gap between fundamental physics courses (such as optics, electrodynamics, quantum mechanics and solid state physics) and highly specialized literature on the spectroscopy, design, and application of optical thin film coatings. Basic knowledge from the above-mentioned courses is therefore presumed. Starting from fundamental physics, the book enables the reader derive the theory of optical coatings and to apply it to practically important spectroscopic problems. Both classical and semiclassical approaches are included. Examples describe the full range of classical optical coatings in various spectral regions as well as highly specialized new topics such as rugate filters and resonant grating waveguide structures.The second edition has been updated and extended with respect to probing matter in different spectral regions, homogenous and inhomogeneous line broadening mechanisms and the Fresnel formula for the effect of planar interfaces.

  16. The structural and optical characterizations of tetraphenylporphyrin thin films

    Energy Technology Data Exchange (ETDEWEB)

    Makhlouf, M.M., E-mail: m_makhlof@hotmail.com [Physics Department, Faculty of Applied Medical Science at Turabah branch, Taif University, Turabah, 21995 (Saudi Arabia); Department of Physics, Faculty of Science at New Damietta, Damietta University, New Damietta 34517 (Egypt); El-Denglawey, A. [Physics Department, Faculty of Applied Medical Science at Turabah branch, Taif University, Turabah, 21995 (Saudi Arabia); Physics Department, Faculty of Science, South Valley University, Qena 83523 (Egypt); Zeyada, H.M. [Department of Physics, Faculty of Science at New Damietta, Damietta University, New Damietta 34517 (Egypt); El-Nahass, M.M. [Physics Department, Faculty of Education, Ain Shams University, Cairo (Egypt)

    2014-03-15

    X-rays diffraction and scanning electron microscope were used to investigate the structural properties of tetraphenylporphyrin, TPP, which is polycrystalline in a synthesized condition. It turns to amorphous structure upon thermal deposition. Annealing temperature ranging from 295 to 473 K does not influence the amorphous structure of films. The optical properties of TPP were investigated using spectrophotometric measurements of the transmittance and reflectance at normal incidence in the wavelength range of 200–2200 nm. The absorption spectra were recorded in UV–visible region of spectra for the as-deposited and annealed samples show different absorption bands, namely four bands labeled as Q-band in visible region of spectra and a more intense band termed as the Soret band in near UV region of spectra. The Soret band shows its splitting (Davydov splitting). Two other bands labeled N and M appear in UV region. The film thickness has no influence on optical properties of films while annealing temperatures have a slight influence on optical properties of TPP films. The type of optical transition in as deposited and annealed conditions of films was found to be indirect allowed band-gap. Both fundamental and onset energy gap decreases upon annealing. -- Highlights: • Tetraphenylporphyrin (TPP) is polycrystalline in powder form, while the as-deposited and annealed TPP thin films have amorphous structure. • The absorption spectra of TPP in UV–visible region consists of Q-bands, Soret band and two other bands labeled N and M. • The optical parameters of TPP thin film were measured. • Thermal annealing influences optical properties of TPP thin films.

  17. The structural and optical characterizations of tetraphenylporphyrin thin films

    International Nuclear Information System (INIS)

    Makhlouf, M.M.; El-Denglawey, A.; Zeyada, H.M.; El-Nahass, M.M.

    2014-01-01

    X-rays diffraction and scanning electron microscope were used to investigate the structural properties of tetraphenylporphyrin, TPP, which is polycrystalline in a synthesized condition. It turns to amorphous structure upon thermal deposition. Annealing temperature ranging from 295 to 473 K does not influence the amorphous structure of films. The optical properties of TPP were investigated using spectrophotometric measurements of the transmittance and reflectance at normal incidence in the wavelength range of 200–2200 nm. The absorption spectra were recorded in UV–visible region of spectra for the as-deposited and annealed samples show different absorption bands, namely four bands labeled as Q-band in visible region of spectra and a more intense band termed as the Soret band in near UV region of spectra. The Soret band shows its splitting (Davydov splitting). Two other bands labeled N and M appear in UV region. The film thickness has no influence on optical properties of films while annealing temperatures have a slight influence on optical properties of TPP films. The type of optical transition in as deposited and annealed conditions of films was found to be indirect allowed band-gap. Both fundamental and onset energy gap decreases upon annealing. -- Highlights: • Tetraphenylporphyrin (TPP) is polycrystalline in powder form, while the as-deposited and annealed TPP thin films have amorphous structure. • The absorption spectra of TPP in UV–visible region consists of Q-bands, Soret band and two other bands labeled N and M. • The optical parameters of TPP thin film were measured. • Thermal annealing influences optical properties of TPP thin films

  18. Optical response of Cu3Ge thin films

    OpenAIRE

    Aboelfotoh, M. O.; Guizzetti, G.; Marabelli, F.; Pellegrino, Paolo; Sassella, A.

    1996-01-01

    We report an investigation on the optical properties of Cu3Ge thin films displaying very high conductivity, with thickness ranging from 200 to 2000 Å, deposited on Ge substrates. Reflectance, transmittance, and ellipsometric spectroscopy measurements were performed at room temperature in the 0.01-6.0, 0.01-0.6, and 1.4-5.0 eV energy range, respectively. The complex dielectric function, the optical conductivity, the energy-loss function, and the effective charge density were obtained over the ...

  19. Thin film shape memory alloys for optical sensing applications

    International Nuclear Information System (INIS)

    Fu, Y Q; Luo, J K; Huang, W M; Flewitt, A J; Milne, W I

    2007-01-01

    Based on shape memory effect of the sputtered thin film shape memory alloys, different types of micromirror structures were designed and fabricated for optical sensing application. Using surface micromachining, TiNi membrane mirror structure has been fabricated, which can be actuated based on intrinsic two-way shape memory effect of the free-standing TiNi film. Using bulk micromachining, TiNi/Si and TiNi/Si 3 N 4 microcantilever mirror structures were fabricated

  20. Optical properties of CeO 2 thin films

    Indian Academy of Sciences (India)

    Cerium oxide (CeO2) thin films have been prepared by electron beam evaporation technique onto glass substrate at a pressure of about 6 × 10-6 Torr. The thickness of CeO2 films ranges from 140–180 nm. The optical properties of cerium oxide films are studied in the wavelength range of 200–850 nm. The film is highly ...

  1. Interaction of a charge with a thin plasma sheet

    International Nuclear Information System (INIS)

    Bordag, M.

    2007-01-01

    The interaction of the electromagnetic field with a two-dimensional plasma sheet intended to describe the pi-electrons of a carbon nanotube or a C 60 molecule is investigated. By first integrating out the displacement field of the plasma or the electromagnetic field, different representations for quantities like the Casimir energy are derived which are shown to be consistent with one another. Starting from the covariant gauge for the electromagnetic field, it is shown that the matching conditions to which the presence of the plasma sheet can be reduced are different from the commonly used ones. The difference in the treatments does not show up in the Casimir force between two parallel sheets, but it is present in the Casimir-Polder force between a charge or a neutral atom and a sheet. At once, since the plasma sheet is a regularization of the conductor boundary conditions, this sheds light on the difference in physics found earlier in the realization of conductor boundary conditions as 'thin' or 'thick' boundary conditions in Phys. Rev. D 70, 085010 (2004)

  2. Layer-controllable graphene by plasma thinning and post-annealing

    Science.gov (United States)

    Zhang, Lufang; Feng, Shaopeng; Xiao, Shaoqing; Shen, Gang; Zhang, Xiumei; Nan, Haiyan; Gu, Xiaofeng; Ostrikov, Kostya (Ken)

    2018-05-01

    The electronic structure of graphene depends crucially on its layer number and therefore engineering the number of graphene's atomic stacking layers is of great importance for the preparation of graphene-based devices. In this paper, we demonstrated a relatively less invasive, high-throughput and uniform large-area plasma thinning of graphene based on direct bombardment effect of fast-moving ionic hydrogen or argon species. Any desired number of graphene layers including trilayer, bilayer and monolayer can be obtained. Structural changes of graphene layers are studied by optical microscopy, Raman spectroscopy and atomic force microscopy. Post annealing is adopted to self-heal the lattice defects induced by the ion bombardment effect. This plasma etching technique is efficient and compatible with semiconductor manufacturing processes, and may find important applications for graphene-based device fabrication.

  3. Optical Instruments Synergy in Determination of Optical Depth of Thin Clouds

    Energy Technology Data Exchange (ETDEWEB)

    Vladutescu, Daniela V.; Schwartz, Stephen E.

    2017-06-25

    Optically thin clouds have a strong radiative effect and need to be represented accurately in climate models. Cloud optical depth of thin clouds was retrieved using high resolution digital photography, lidar, and a radiative transfer model. The Doppler Lidar was operated at 1.5 μm, minimizing return from Rayleigh scattering, emphasizing return from aerosols and clouds. This approach examined cloud structure on scales 3 to 5 orders of magnitude finer than satellite products, opening new avenues for examination of cloud structure and evolution.

  4. Transparent thin film polarizing and optical control systems

    Directory of Open Access Journals (Sweden)

    Nelson V. Tabiryan

    2011-06-01

    Full Text Available We show that a diffractive waveplate can be combined with a phase retardation film for fully converting light of arbitrary polarization state into a polarized light. Incorporating a photonic bandgap layer into a system of such polarizers that unify different polarization states in the input light into a single polarization state at its output, rather than absorbing or reflecting half of it, we developed and demonstrated a polarization-independent optical controller capable of switching between transmittive and reflective states. The transition between those states is smoothly controlled with low-voltage and low-power sources. Using versatile fabrication methods, this “universally polarizing optical controller” can be integrated into a thin package compatible with a variety of display, spatial light modulation, optical communication, imaging and other photonics systems.

  5. Optical characterisation of sputtered hydrogenated amorphous silicon thin films

    International Nuclear Information System (INIS)

    Mellassi, K.; Chafik El Idrissi, M.; Chouiyakh, A.; Rjeb, A.; Barhdadi, A.

    2000-09-01

    The present work is devoted to the study of some optical properties of hydrogenated amorphous silicon (a-Si:H) thin films prepared by radio-frequency cathodic sputtering technique. It is essentially focused on investigating separately the effects of increasing partial hydrogen pressure during the deposition stage, and the effects of post deposition thermal annealing on the main optical parameters of the deposited layers (refraction index, optical gap Urbach energy, etc.). We show that low hydrogen pressures allow a saturation of the dangling bonds in the material, while high pressures lead to the creation of new defects. We also show that thermal annealing under moderate temperatures allows a good improvement of the structural quality of deposited films. (author)

  6. Determining thin film properties by fitting optical transmittance

    International Nuclear Information System (INIS)

    Klein, J.D.; Yen, A.; Cogan, S.F.

    1990-01-01

    The optical transmission spectra of rf sputtered tungsten oxide films on glass substrates were modeled to determine absorption edge behavior, film thickness, and index of refraction. Removal of substrate reflection and absorption phenomena from the experimental spectra allowed direct examination of thin film optical characteristics. The interference fringe pattern allows determination of the film thickness and the dependence of the real index of refraction on wavelength. Knowledge of the interference fringe behavior in the vicinity of the absorption edge was found essential to unambiguous determination of the optical band gap. In particular, the apparently random deviations commonly observed in the extrapolation of as-acquired data are eliminated by explicitly considering interference fringe phenomena. The multivariable optimization fitting scheme employed allows air-film-substrate reflection losses to be compensated without making reflectance measurements

  7. Topography description of thin films by optical Fourier Transform

    International Nuclear Information System (INIS)

    Jaglarz, Janusz

    2008-01-01

    In this work, the main problems concerning the scattering of light by real surfaces and films are presented in view of results obtained with the bidirectional reflection distribution function (BRDF) method and optical profilometry (OP). The BRDF and OP studies, being complementary to the atomic force microscopy (AFM), allow one to get information about surface topography. From the optical data, the surface power spectral density (PSD) functions for absorbing and transparent rough films have been found. Both functions have been evaluated from the Fourier transform (FT) of the surface profiles. The usefulness of BRDF-and OP methods in characterization of real surfaces is demonstrated when analyzing the optical data obtained for metallic TiN-and organic PVK thin films deposited on various substrates

  8. Topography description of thin films by optical Fourier Transform

    Energy Technology Data Exchange (ETDEWEB)

    Jaglarz, Janusz [Institute of Physics, Cracow University of Technology, ul. Podchoraz.ych 1, 30-084 Krakow (Poland)], E-mail: pujaglar@cyfronet.krakow.pl

    2008-09-30

    In this work, the main problems concerning the scattering of light by real surfaces and films are presented in view of results obtained with the bidirectional reflection distribution function (BRDF) method and optical profilometry (OP). The BRDF and OP studies, being complementary to the atomic force microscopy (AFM), allow one to get information about surface topography. From the optical data, the surface power spectral density (PSD) functions for absorbing and transparent rough films have been found. Both functions have been evaluated from the Fourier transform (FT) of the surface profiles. The usefulness of BRDF-and OP methods in characterization of real surfaces is demonstrated when analyzing the optical data obtained for metallic TiN-and organic PVK thin films deposited on various substrates.

  9. Optical and electro-optic anisotropy of epitaxial PZT thin films

    Science.gov (United States)

    Zhu, Minmin; Du, Zehui; Jing, Lin; Yoong Tok, Alfred Iing; Tong Teo, Edwin Hang

    2015-07-01

    Strong optical and electro-optic (EO) anisotropy has been investigated in ferroelectric Pb(Zr0.48Ti0.52)O3 thin films epitaxially grown on Nb-SrTiO3 (001), (011), and (111) substrates using magnetron sputtering. The refractive index, electro-optic, and ferroelectric properties of the samples demonstrate the significant dependence on the growth orientation. The linear electro-optic coefficients of the (001), (011), and (111)-oriented PZT thin films were 270.8, 198.8, and 125.7 pm/V, respectively. Such remarkable anisotropic EO behaviors have been explained according to the structure correlation between the orientation dependent distribution, spontaneous polarization, epitaxial strain, and domain pattern.

  10. Optical characterization of composite layers prepared by plasma polymerization

    International Nuclear Information System (INIS)

    Radeva, E; Hikov, T; Mitev, D; Pramatarova, L; Stroescu, H; Nicolescu, M; Gartner, M; Presker, R

    2016-01-01

    Thin composite layers from polymer/nanoparticles (Ag-nanoparticles and detonation nanodiamonds) were prepared by plasma polymerization process on the base of hexamethyldisiloxane. The variation of the layer composition was achieved by changing the type of nanoparticles. The optical measurement techniques used were UV-VIS-NIR ellipsometry (SE), Fourier-transformed infrared spectroscopy (FTIR) and Raman spectroscopy. The values of the refractive index determined are in the range 1.30 to 1.42. All samples are transparent with transmission between 85-95% and very smooth. The change in Raman and FTIR spectra of the composites verify the expected bonding between polymer and diamond nanoparticles due to the penetration of the fillers in the polymer matrix. The comparison of the spectra of the corresponding NH3 plasma treated composites revealed that the composite surface becomes more hydrophilic. The obtained results indicate that preparation of layers with desired compositions is possible at a precise control of the detonation nanodiamond materials. (paper)

  11. Process control by optical emission spectroscopy during growth of a-C:H from a CH4 plasma by plasma-enhanced chemical vapour deposition

    DEFF Research Database (Denmark)

    Barholm-Hansen, C; Bentzon, MD; Vigild, Martin Etchells

    1994-01-01

    During the growth of a-C:H thin films for tribological applications, the characteristic optical emission from a CH4 plasma was used to estimate growth conditions such as the degree of dissociation of the feed gas, the deposition rate and the presence of impurities. Films were fabricated with vari...

  12. Removal of carbon contaminations by RF plasma generated reactive species and subsequent effects on optical surface

    Energy Technology Data Exchange (ETDEWEB)

    Yadav, P. K., E-mail: praveenyadav@rrcat.gov.in; Rai, S. K.; Modi, M. H.; Nayak, M.; Lodha, G. S. [Indus Synchrotron Utilization Division, Raja Ramanna Centre for Advanced Technology, Indore-452013 (India); Kumar, M.; Chakera, J. A.; Naik, P. A. [Laser Plasma Laboratory, Laser Plasma Division, Raja Ramanna Centre for Advanced Technology, Indore-452013 (India)

    2015-06-24

    Carbon contamination on optical elements is a serious issue in synchrotron beam lines for several decades. The basic mechanism of carbon deposition on optics and cleaning strategies are not fully understood. Carbon growth mechanism and optimized cleaning procedures are worldwide under development stage. Optimized RF plasma cleaning is considered an active remedy for the same. In present study carbon contaminated optical test surfaces (carbon capped tungsten thin film) are exposed for 30 minutes to four different gases, rf plasma at constant power and constant dynamic pressure. Structural characterization (thickness, roughness and density) of virgin samples and plasma exposed samples was done by soft x-ray (λ=80 Å) reflectivity measurements at Indus-1 reflectivity beam line. Different gas plasma removes carbon with different rate (0.4 to 0.65 nm /min). A thin layer 2 to 9 nm of different roughness and density is observed at the top surface of tungsten film. Ar gas plasma is found more suitable for cleaning of tungsten surface.

  13. Thin films by metal-organic precursor plasma spray

    International Nuclear Information System (INIS)

    Schulz, Douglas L.; Sailer, Robert A.; Payne, Scott; Leach, James; Molz, Ronald J.

    2009-01-01

    While most plasma spray routes to coatings utilize solids as the precursor feedstock, metal-organic precursor plasma spray (MOPPS) is an area that the authors have investigated recently as a novel route to thin film materials. Very thin films are possible via MOPPS and the technology offers the possibility of forming graded structures by metering the liquid feed. The current work employs metal-organic compounds that are liquids at standard temperature-pressure conditions. In addition, these complexes contain chemical functionality that allows straightforward thermolytic transformation to targeted phases of interest. Toward that end, aluminum 3,5-heptanedionate (Al(hd) 3 ), triethylsilane (HSi(C 2 H 5 ) 3 or HSiEt 3 ), and titanium tetrakisdiethylamide (Ti(N(C 2 H 5 ) 2 ) 4 or Ti(NEt 2 ) 4 ) were employed as precursors to aluminum oxide, silicon carbide, and titanium nitride, respectively. In all instances, the liquids contain metal-heteroatom bonds envisioned to provide atomic concentrations of the appropriate reagents at the film growth surface, thus promoting phase formation (e.g., Si-C bond in triethylsilane, Ti-N bond in titanium amide, etc.). Films were deposited using a Sulzer Metco TriplexPro-200 plasma spray system under various experimental conditions using design of experiment principles. Film compositions were analyzed by glazing incidence x-ray diffraction and elemental determination by x-ray spectroscopy. MOPPS films from HSiEt 3 showed the formation of SiC phase but Al(hd) 3 -derived films were amorphous. The Ti(NEt 2 ) 4 precursor gave MOPPS films that appear to consist of nanosized splats of TiOCN with spheres of TiO 2 anatase. While all films in this study suffered from poor adhesion, it is anticipated that the use of heated substrates will aid in the formation of dense, adherent films.

  14. Coating Thin Mirror Segments for Lightweight X-ray Optics

    Science.gov (United States)

    Chan, Kai-Wing; Sharpe, Marton V.; Zhang, William; Kolosc, Linette; Hong, Melinda; McClelland, Ryan; Hohl, Bruce R.; Saha, Timo; Mazzarellam, James

    2013-01-01

    Next generations lightweight, high resolution, high throughput optics for x-ray astronomy requires integration of very thin mirror segments into a lightweight telescope housing without distortion. Thin glass substrates with linear dimension of 200 mm and thickness as small as 0.4 mm can now be fabricated to a precision of a few arc-seconds for grazing incidence optics. Subsequent implementation requires a distortion-free deposition of metals such as iridium or platinum. These depositions, however, generally have high coating stresses that cause mirror distortion. In this paper, we discuss the coating stress on these thin glass mirrors and the effort to eliminate their induced distortion. It is shown that balancing the coating distortion either by coating films with tensile and compressive stresses, or on both sides of the mirrors is not sufficient. Heating the mirror in a moderately high temperature turns out to relax the coated films reasonably well to a precision of about a second of arc and therefore provide a practical solution to the coating problem.

  15. Plasma-assisted co-evaporation of {beta}-indium sulfide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Kosaraju, Sreenivas; Marino, Joseph A.; Harvey, John A.; Wolden, Colin A. [Department of Chemical Engineering, Colorado School of Mines, Golden, CO 80401 (United States)

    2006-05-05

    This paper describes the development of plasma-assisted co-evaporation (PACE) for the formation of {beta}-In{sub 2}S{sub 3} thin films. Indium was supplied by conventional thermal evaporation, while the chalcogen gas precursor (H{sub 2}S) was activated using an inductively coupled plasma (ICP) source. Using a combination of optical emission spectroscopy and mass spectrometry it was shown that the ICP effectively dissociated H{sub 2}S, producing atomic sulfur. Transport modeling was used to quantify the flux distributions of the co-evaporated metal and the plasma-generated species impinging the substrate. Model predictions were validated by measurements of deposition rate and film properties. Substantial improvements in both materials utilization and substrate temperature reduction were realized with respect to conventional co-evaporation. {beta}-In{sub 2}S{sub 3} was formed as low as 100{sup o}C and it was observed that quality was a strong function of S/In ratio. The grain size decreased and the optical band gap increased as the substrate temperature was reduced. (author)

  16. Morphological and optical properties of silicon thin films by PLD

    International Nuclear Information System (INIS)

    Ayouchi, R.; Schwarz, R.; Melo, L.V.; Ramalho, R.; Alves, E.; Marques, C.P.; Santos, L.; Almeida, R.; Conde, O.

    2009-01-01

    Silicon thin films have been prepared on sapphire substrates by pulsed laser deposition (PLD) technique. The films were deposited in vacuum from a silicon target at a base pressure of 10 -6 mbar in the temperature range from 400 to 800 deg. C. A Q-switched Nd:YAG laser (1064 nm, 5 ns duration, 10 Hz) at a constant energy density of 2 J x cm -2 has been used. The influence of the substrate temperature on the structural, morphological and optical properties of the Si thin films was investigated. Spectral ellipsometry and atomic force microscopy (AFM) were used to study the thickness and the surface roughness of the deposited films. Surface roughness values measured by AFM and ellipsometry show the same tendency of increasing roughness with increased deposition temperature

  17. Optical properties of PbS thin films

    Energy Technology Data Exchange (ETDEWEB)

    Akhmedov, O. R., E-mail: orucahmedov@mail.ru; Guseinaliyev, M. G. [National Academy of Azerbaijan, Nakhichevan Branch (Azerbaijan); Abdullaev, N. A.; Abdullaev, N. M.; Babaev, S. S.; Kasumov, N. A. [National Academy of Sciences of Azerbaijan, Abdullaev Institute of Physics (Azerbaijan)

    2016-01-15

    The complex dielectric function of PbS thin films is studied by spectroscopic ellipsometry in the spectral range from 0.74 to 6.45 eV at a temperature of 293 K. The critical energies are determined to be E{sub 1} = 3.53 eV and E{sub 2} = 4.57 eV. For both energy regions, the best fit is attained at the critical point 2D (m = 0). In addition, the Raman spectra and the optical-absorption spectra of PbS thin films are studied. From the dependence of the quantity (αhν){sup 2} on the photon energy hν, the band gap is established at E{sub g} = 0.37 eV.

  18. Defect enhanced optic and electro-optic properties of lead zirconate titanate thin films

    Directory of Open Access Journals (Sweden)

    M. M. Zhu

    2011-12-01

    Full Text Available Pb(Zr1-xTixO3 (PZT thin films near phase morphotropic phase boundary were deposited on (Pb0.86La0.14TiO3-coated glass by radio frequency sputtering. A retrieved analysis shows that the lattice parameters of the as-grown PZT thin films were similar to that of monoclinic PZT structure. Moreover, the PZT thin films possessed refractive index as high as 2.504 in TE model and 2.431 in TM model. The as-grown PZT thin film had one strong absorption peak at 632.6 nm, which attributed to lead deficiency by quantitative XPS analysis. From the attractive properties achieved, electro-optic and photovoltaic characteristic of the films were carried out.

  19. Layer-by-layer thinning of MoSe_2 by soft and reactive plasma etching

    International Nuclear Information System (INIS)

    Sha, Yunfei; Xiao, Shaoqing; Zhang, Xiumei; Qin, Fang; Gu, Xiaofeng

    2017-01-01

    Highlights: • Soft plasma etching technique using SF_6 + N_2 as precursors for layer-by-layer thinning of MoSe_2 was adopted in this work. • Optical microscopy, Raman, photoluminescence and atomic force microscopy measurements were used to confirm the thickness change. • Layer-dependent vibrational and photoluminescence spectra of the etched MoSe_2 were also demonstrated. • Equal numbers of MoSe_2 layers can be removed uniformly without affecting the underlying SiO_2 substrate and the remaining MoSe_2 layers. - Abstract: Two-dimensional (2D) transition metal dichalcogenides (TMDs) like molybdenum diselenide (MoSe_2) have recently gained considerable interest since their properties are complementary to those of graphene. Unlike gapless graphene, the band structure of MoSe_2 can be changed from the indirect band gap to the direct band gap when MoSe_2 changed from bulk material to monolayer. This transition from multilayer to monolayer requires atomic-layer-precision thining of thick MoSe_2 layers without damaging the remaining layers. Here, we present atomic-layer-precision thinning of MoSe_2 nanaosheets down to monolayer by using SF_6 + N_2 plasmas, which has been demonstrated to be soft, selective and high-throughput. Optical microscopy, atomic force microscopy, Raman and photoluminescence spectra suggest that equal numbers of MoSe_2 layers can be removed uniformly regardless of their initial thickness, without affecting the underlying SiO_2 substrate and the remaining MoSe_2 layers. By adjusting the etching rates we can achieve complete MoSe_2 removal and any disired number of MoSe_2 layers including monolayer. This soft plasma etching method is highly reliable and compatible with the semiconductor manufacturing processes, thereby holding great promise for various 2D materials and TMD-based devices.

  20. Magneto-optic properties and optical parameter of thin MnCo films

    Directory of Open Access Journals (Sweden)

    E Attaran Kakhki

    2009-09-01

    Full Text Available Having precise hysterics loop of thin ferroelectric and ferromagnetic layers for optical switching and optical storages are important. A hysterieses loop can be achieved from a phenomenon call the magneto-optic effect. The magneto-optic effect is the rotation of a linear polarized electromagnetic wave propagated through a ferromagnetic medium. When light is transmitted through a layer of magnetic material the result is called the Faraday effects and in the reflection mode Kerr effect. In the present work we prepared a thin layer of MnxCo3-xO4 (0≤ x ≤ 1 and a binary form of MnO/Co3O4 by the spray pyrolysis method. The films have been characterized by a special set up of magneto-optic hysterics loop plotter containing a polarized He- Ne laser beam and a special electronic circuit. Faraday rotation were measured for these films by hysterics loop plotter and their optical properties were also obtained by spatial software designed for this purpose according to Swane Poel theoretical method. The measurements show that the samples at diluted Mn study has are ferromagnetic and the magneto-optic rotation show a good enhance respect to the single Co layers. Also, the study has shown that the MnCo oxide layer have two different energy gaps and by increasing of Mn this energy decreases and fall to 0.13 eV.

  1. Thin Film Magnetless Faraday Rotators for Compact Heterogeneous Integrated Optical Isolators (Postprint)

    Science.gov (United States)

    2017-06-15

    AFRL-RX-WP-JA-2017-0348 THIN-FILM MAGNETLESS FARADAY ROTATORS FOR COMPACT HETEROGENEOUS INTEGRATED OPTICAL ISOLATORS (POSTPRINT) Dolendra Karki...Interim 9 May 2016 – 1 December 2016 4. TITLE AND SUBTITLE THIN-FILM MAGNETLESS FARADAY ROTATORS FOR COMPACT HETEROGENEOUS INTEGRATED OPTICAL...transfer of ultra-compact thin-film magnetless Faraday rotators to silicon photonic substrates. Thin films of magnetization latching bismuth

  2. Production of selective membranes using plasma deposited nanochanneled thin films

    Directory of Open Access Journals (Sweden)

    Rodrigo Amorim Motta Carvalho

    2006-12-01

    Full Text Available The hydrolization of thin films obtained by tetraethoxysilane plasma polymerization results in the formation of a nanochanneled silicone like structure that could be useful for the production of selective membranes. Therefore, the aim of this work is to test the permeation properties of hydrolyzed thin films. The films were tested for: 1 permeation of polar organic compounds and/or water in gaseous phase and 2 permeation of salt in liquid phase. The efficiency of permeation was tested using a quartz crystal microbalance (QCM technique in gas phase and conductimetric analysis (CA in liquid phase. The substrates used were: silicon for characterization of the deposited films, piezoelectric quartz crystals for tests of selective membranes and cellophane paper for tests of permeation. QCM analysis showed that the nanochannels allow the adsorption and/or permeation of polar organic compounds, such as acetone and 2-propanol, and water. CA showed that the films allow salt permeation after an inhibition time needed for hydrolysis of the organic radicals within the film. Due to their characteristics, the films can be used for grains protection against microorganism proliferation during storage without preventing germination.

  3. Structural and optical properties of furfurylidenemalononitrile thin films

    Science.gov (United States)

    Ali, H. A. M.

    2013-03-01

    Thin films of furfurylidenemalononitrile (FMN) were deposited on different substrates at room temperature by thermal evaporation technique under a high vacuum. The structure of the powder was confirmed by Fourier transformation infrared (FTIR) technique. The unit cell dimensions were determined from X-ray diffraction (XRD) studies. The optical properties were investigated using spectrophotometric measurements of the transmittance and reflectance at normal incidence of light in the wavelength range from 200 to 2500 nm. The refractive index (n), the absorption index (k) and the absorption coefficient (α) were calculated. The analysis of the spectral behavior of the absorption coefficient in the absorption region revealed an indirect allowed transition. The refractive index dispersion was analyzed using the single oscillator model. Some dispersion parameters were estimated. Complex dielectric function and optical conductivity were determined. The influence of the irradiation with high-energy X-rays (6 MeV) on the studied properties was also investigated.

  4. Thin film optical coatings for the ultraviolet spectral region

    Science.gov (United States)

    Torchio, P.; Albrand, G.; Alvisi, M.; Amra, C.; Rauf, H.; Cousin, B.; Otrio, G.

    2017-11-01

    The applications and innovations related to the ultraviolet field are today in strong growth. To satisfy these developments which go from biomedical to the large equipment like the Storage Ring Free Electron Laser, it is crucial to control with an extreme precision the optical performances, in using the substrates and the thin film materials impossible to circumvent in this spectral range. In particular, the reduction of the losses by electromagnetic diffusion, Joule effect absorption, or the behavior under UV luminous flows of power, resistance to surrounding particulate flows... become top priority which concerns a broad European and international community. Our laboratory has the theoretical, experimental and technological tools to design and fabricate numerous multilayer coatings with desirable optical properties in the visible and infrared spectral ranges. We have extended our expertise to the ultraviolet. We present here some results on high reflectivity multidielectric mirrors towards 250 nm in wavelength, produced by Ion Plating Deposition. The latter technique allows us to obtain surface treatments with low absorption and high resistance. We give in this study the UV transparent materials and the manufacturing technology which have been the best suited to meet requirements. Single UV layers were deposited and characterized. HfO2/SiO2 mirrors with a reflectance higher than 99% at 300 nm were obtained. Optical and non-optical characterizations such as UV spectrophotometric measurements, X-Ray Diffraction spectra, Scanning Electron Microscope and Atomic Force Microscope images were performed

  5. Hard X-ray quantum optics in thin films nanostructures

    International Nuclear Information System (INIS)

    Haber, Johann Friedrich Albert

    2017-05-01

    This thesis describes quantum optical experiments with X-rays with the aim of reaching the strong-coupling regime of light and matter. We make use of the interaction which arises between resonant matter and X-rays in specially designed thin-film nanostructures which form X-ray cavities. Here, the resonant matter are Tantalum atoms and the Iron isotope "5"7Fe. Both limit the number of modes available to the resonant atoms for interaction, and enhances the interaction strength. Thus we have managed to observe a number of phenomena well-known in quantum optics, which are the building blocks for sophisticated applications in e.g. metrology. Among these are the strong coupling of light and matter and the concurrent exchange of virtual photons, often called Rabi oscillations. Furthermore we have designed and tested a type of cavity hitherto unused in X-ray optics. Finally, we develop a new method for synchrotron Moessbauer spectroscopy, which not only promises to yield high-resolution spectra, but also enables the retrieval of the phase of the scattered light. The results open new avenues for quantum optical experiments with X-rays, particularly with regards to the ongoing development of high-brilliance X-ray free-electron lasers.

  6. Hard X-ray quantum optics in thin films nanostructures

    Energy Technology Data Exchange (ETDEWEB)

    Haber, Johann Friedrich Albert

    2017-05-15

    This thesis describes quantum optical experiments with X-rays with the aim of reaching the strong-coupling regime of light and matter. We make use of the interaction which arises between resonant matter and X-rays in specially designed thin-film nanostructures which form X-ray cavities. Here, the resonant matter are Tantalum atoms and the Iron isotope {sup 57}Fe. Both limit the number of modes available to the resonant atoms for interaction, and enhances the interaction strength. Thus we have managed to observe a number of phenomena well-known in quantum optics, which are the building blocks for sophisticated applications in e.g. metrology. Among these are the strong coupling of light and matter and the concurrent exchange of virtual photons, often called Rabi oscillations. Furthermore we have designed and tested a type of cavity hitherto unused in X-ray optics. Finally, we develop a new method for synchrotron Moessbauer spectroscopy, which not only promises to yield high-resolution spectra, but also enables the retrieval of the phase of the scattered light. The results open new avenues for quantum optical experiments with X-rays, particularly with regards to the ongoing development of high-brilliance X-ray free-electron lasers.

  7. Structural and optical properties of electrodeposited molybdenum oxide thin films

    International Nuclear Information System (INIS)

    Patil, R.S.; Uplane, M.D.; Patil, P.S.

    2006-01-01

    Electrosynthesis of Mo(IV) oxide thin films on F-doped SnO 2 conducting glass (10-20/Ω/□) substrates were carried from aqueous alkaline solution of ammonium molybdate at room temperature. The physical characterization of as-deposited films carried by thermogravimetric/differential thermogravimetric analysis (TGA/DTA), infrared spectroscopy and X-ray diffraction (XRD) showed the formation of hydrous and amorphous MoO 2 . Scanning electron microscopy (SEM) revealed a smooth but cracked surface with multi-layered growth. Annealing of these films in dry argon at 450 deg. C for 1 h resulted into polycrystalline MoO 2 with crystallites aligned perpendicular to the substrate. Optical absorption study indicated a direct band gap of 2.83 eV. The band gap variation consistent with Moss rule and band gap narrowing upon crystallization was observed. Structure tailoring of as-deposited thin films by thermal oxidation in ambient air to obtain electrochromic Mo(VI) oxide thin films was exploited for the first time by this novel route. The results of this study will be reported elsewhere

  8. Effects of phosphorus on the electrical characteristics of plasma deposited hydrogenated amorphous silicon carbide thin films

    Science.gov (United States)

    Alcinkaya, Burak; Sel, Kivanc

    2018-01-01

    The properties of phosphorus doped hydrogenated amorphous silicon carbide (a-SiCx:H) thin films, that were deposited by plasma enhanced chemical vapor deposition technique with four different carbon contents (x), were analyzed and compared with those of the intrinsic a-SiCx:H thin films. The carbon contents of the films were determined by X-ray photoelectron spectroscopy. The thickness and optical energies, such as Tauc, E04 and Urbach energies, of the thin films were determined by UV-Visible transmittance spectroscopy. The electrical properties of the films, such as conductivities and activation energies were analyzed by temperature dependent current-voltage measurements. Finally, the conduction mechanisms of the films were investigated by numerical analysis, in which the standard transport mechanism in the extended states and the nearest neighbor hopping mechanism in the band tail states were taken into consideration. It was determined that, by the effect of phosphorus doping the dominant conduction mechanism was the standard transport mechanism for all carbon contents.

  9. Thin film and multilayer optics for XUV spectral domain (1 nm to 60 nm)

    International Nuclear Information System (INIS)

    Delmotte, Franck

    2010-02-01

    The XUV spectral domain (1-60 nm wavelength range) has experienced rapid growth in recent years. On one side, the sources (synchrotron radiation, harmonic generation, x-ray laser, free-electron laser...) require ever more efficient optics, on the other hand, applications (diagnostics of hot plasma, solar physics, x-ray microscopy, EUV lithography, x-ray analysis...) provide new constraints on the design of multilayer stacks. The multilayer mirrors are the only way to achieve efficient optics operating at non-grazing incidence angles in this spectral range. Our work within the team XUV Optics at Laboratoire Charles Fabry de l'Institut d'Optique focuses on the study of materials in thin layers correlated to the study of optical properties of multilayers. The objective is to achieve new multilayer components previously unavailable in the XUV domain, through a better understanding of physical phenomena in these nano-layer stacks. We show through several examples of how we have managed both to improve the performance of multilayer mirrors in a broad spectral range, and secondly, to develop new optical functions: beam splitters, broadband mirrors, dual-band mirrors or phase compensation mirrors. (author)

  10. Optically Transparent Thin-Film Electrode Chip for Spectroelectrochemical Sensing

    Energy Technology Data Exchange (ETDEWEB)

    Branch, Shirmir D.; Lines, Amanda M.; Lynch, John A.; Bello, Job M.; Heineman, William R.; Bryan, Samuel A.

    2017-07-03

    The electrochemical and spectroelectrochemical applications of an optically transparent thin film electrode chip are investigated. The working electrode is composed of indium tin oxide (ITO); the counter and quasi-reference electrodes are composed of platinum. The stability of the platinum quasi-reference electrode is modified by coating it with a planar, solid state Ag/AgCl layer. The Ag/AgCl reference is characterized with scanning electron microscopy and energy-dispersive X-ray spectroscopy. Open circuit potential measurements indicate that the potential of the planar Ag/AgCl electrode varies a maximum of 20 mV over four days. Cyclic voltammetry measurements show that the electrode chip is comparable to a standard electrochemical cell. Randles-Sevcik analysis of 10 mM K3[Fe(CN)6] in 0.1 M KCl using the electrode chip shows a diffusion coefficient of 1.59 × 10-6 cm2/s, in comparison to the standard electrochemical cell value of 2.38 × 10-6 cm2/s. By using the electrode chip in an optically transparent thin layer electrode (OTTLE), the spectroelectrochemical modulation of [Ru(bpy)3]2+ florescence was demonstrated, achieving a detection limit of 36 nM.

  11. Optical response of thin amorphous films to infrared radiation

    Science.gov (United States)

    Orosco, J.; Coimbra, C. F. M.

    2018-03-01

    We briefly review the electrical-optical response of materials to radiative forcing within the formalism of the Kramers-Kronig relations. A commensurate set of criteria is described that must be met by any frequency-domain model representing the time-domain response of a real (i.e., physically possible) material. The criteria are applied to the Brendel-Bormann (BB) oscillator, a model that was originally introduced for its fidelity at reproducing the non-Lorentzian peak broadening experimentally observed in the infrared absorption by thin amorphous films but has since been used for many other common materials. We show that the BB model fails to satisfy the established physical criteria. Taking an alternative approach to the model derivation, a physically consistent model is proposed. This model provides the appropriate line-shape broadening for modeling the infrared optical response of thin amorphous films while adhering strictly to the Kramers-Kronig criteria. Experimental data for amorphous alumina (Al2O3 ) and amorphous quartz silica (SiO2) are used to obtain model parametrizations for both the noncausal BB model and the proposed causal model. The proposed model satisfies consistency criteria required by the underlying physics and reproduces the experimental data with better fidelity (and often with fewer parameters) than previously proposed permittivity models.

  12. Single-shot optical conductivity measurement of dense aluminum plasmas

    International Nuclear Information System (INIS)

    Churina, I. V.; Cho, B.-I.; Bernstein, A.; Stoker, D. S.; Dalton, A.; Symes, D. R.; Ditmire, T.

    2009-01-01

    The optical conductivity of a dense femtosecond laser-heated aluminum plasma heated to 0.1-1.5 eV was measured using frequency-domain interferometry with chirped pulses, permitting simultaneous observation of optical probe reflectivity and probe pulse phase shift. Coupled with published models of bound-electron contributions to the conductivity, these two independent experimental data yielded a direct measurement of both real and imaginary components of the plasma conductivity.

  13. Applying Fibre Optics to Plasma Jet Diagnostics

    Czech Academy of Sciences Publication Activity Database

    Šonský, Jiří

    2007-01-01

    Roč. 52, č. 1 (2007), s. 15-31 ISSN 0001-7043 R&D Projects: GA ČR GA202/04/1341; GA ČR GA202/05/0728 Institutional research plan: CEZ:AV0Z20570509 Keywords : plasma jet * plasma torch * photodiode array Subject RIV: BL - Plasma and Gas Discharge Physics

  14. Optimization of nanocomposite Au/TiO2 thin films towards LSPR optical-sensing

    Science.gov (United States)

    Rodrigues, M. S.; Costa, D.; Domingues, R. P.; Apreutesei, M.; Pedrosa, P.; Martin, N.; Correlo, V. M.; Reis, R. L.; Alves, E.; Barradas, N. P.; Sampaio, P.; Borges, J.; Vaz, F.

    2018-04-01

    Nanomaterials based on Localized Surface Plasmon Resonance (LSPR) phenomena are revealing to be an important solution for several applications, namely those of optical biosensing. The main reasons are mostly related to their high sensitivity, with label-free detection, and to the simplified optical systems that can be implemented. For the present work, the optical sensing capabilities were tailored by optimizing LSPR absorption bands of nanocomposite Au/TiO2 thin films. These were grown by reactive DC magnetron sputtering. The main deposition parameters changed were the number of Au pellets placed in the Ti target, the deposition time, and DC current applied to the Ti-Au target. Furthermore, the Au NPs clustering, a key feature to have biosensing responses, was induced by several post-deposition in-air annealing treatments at different temperatures, and investigated via SEM analysis. Results showed that the Au/TiO2 thin films with a relatively low thickness (∼100 nm), revealing concentrations of Au close to 13 at.%, and annealed at temperatures above 600 °C, had the most well-defined LSPR absorption band and thus, the most promising characteristics to be explored as optical sensors. The NPs formation studies revealed an incomplete aggregation at 300 and 500 ⁰C and well-defined spheroidal NPs for higher temperatures. Plasma treatment with Ar led to a gradual blue-shift of the LSPR absorption band, which demonstrates the sensitivity of the films to changes in the dielectric environment surrounding the NPs (essential for optical sensing applications) and the exposure of the Au nanoparticles (crucial for a higher sensitivity).

  15. Solution precursor plasma deposition of nanostructured CdS thin films

    International Nuclear Information System (INIS)

    Tummala, Raghavender; Guduru, Ramesh K.; Mohanty, Pravansu S.

    2012-01-01

    Highlights: ► Inexpensive process with capability to produce large scale nanostructured coatings. ► Technique can be employed to spray the coatings on any kind of substrates including polymers. ► The CdS coatings developed have good electrical conductivity and optical properties. ► Coatings possess large amount of particulate boundaries and nanostructured grains. -- Abstract: Cadmium sulfide (CdS) films are used in solar cells, sensors and microelectronics. A variety of techniques, such as vapor based techniques, wet chemical methods and spray pyrolysis are frequently employed to develop adherent CdS films. In the present study, rapid deposition of CdS thin films via plasma spray route using a solution precursor was investigated, for the first time. Solution precursor comprising cadmium chloride, thiourea and distilled water was fed into a DC plasma jet via an axial atomizer to create ultrafine droplets for instantaneous and accelerated thermal decomposition in the plasma plume. The resulting molten/semi-molten ultrafine/nanoparticles of CdS eventually propel toward the substrate to form continuous CdS films. The chemistry of the solution precursor was found to be critical in plasma pyrolysis to control the stoichiometry and composition of the films. X-ray diffraction studies confirmed hexagonal α-CdS structure. Surface morphology and microstructures were investigated to compare with other synthesis techniques in terms of process mechanism and structural features. Transmission electron microscopy studies revealed nanostructures in the atomized particulates. Optical measurements indicated a decreasing transmittance in the visible light with increasing the film thickness and band gap was calculated to be ∼2.5 eV. The electrical resistivity of the films (0.243 ± 0.188 × 10 5 Ω cm) was comparable with the literature values. These nanostructured polycrystalline CdS films could be useful in sensing and solar applications.

  16. Solution precursor plasma deposition of nanostructured CdS thin films

    Energy Technology Data Exchange (ETDEWEB)

    Tummala, Raghavender [Department of Mechanical Engineering, University of Michigan, Dearborn, MI 48128 (United States); Guduru, Ramesh K., E-mail: rkguduru@umich.edu [Department of Mechanical Engineering, University of Michigan, Dearborn, MI 48128 (United States); Mohanty, Pravansu S. [Department of Mechanical Engineering, University of Michigan, Dearborn, MI 48128 (United States)

    2012-03-15

    Highlights: Black-Right-Pointing-Pointer Inexpensive process with capability to produce large scale nanostructured coatings. Black-Right-Pointing-Pointer Technique can be employed to spray the coatings on any kind of substrates including polymers. Black-Right-Pointing-Pointer The CdS coatings developed have good electrical conductivity and optical properties. Black-Right-Pointing-Pointer Coatings possess large amount of particulate boundaries and nanostructured grains. -- Abstract: Cadmium sulfide (CdS) films are used in solar cells, sensors and microelectronics. A variety of techniques, such as vapor based techniques, wet chemical methods and spray pyrolysis are frequently employed to develop adherent CdS films. In the present study, rapid deposition of CdS thin films via plasma spray route using a solution precursor was investigated, for the first time. Solution precursor comprising cadmium chloride, thiourea and distilled water was fed into a DC plasma jet via an axial atomizer to create ultrafine droplets for instantaneous and accelerated thermal decomposition in the plasma plume. The resulting molten/semi-molten ultrafine/nanoparticles of CdS eventually propel toward the substrate to form continuous CdS films. The chemistry of the solution precursor was found to be critical in plasma pyrolysis to control the stoichiometry and composition of the films. X-ray diffraction studies confirmed hexagonal {alpha}-CdS structure. Surface morphology and microstructures were investigated to compare with other synthesis techniques in terms of process mechanism and structural features. Transmission electron microscopy studies revealed nanostructures in the atomized particulates. Optical measurements indicated a decreasing transmittance in the visible light with increasing the film thickness and band gap was calculated to be {approx}2.5 eV. The electrical resistivity of the films (0.243 {+-} 0.188 Multiplication-Sign 10{sup 5} {Omega} cm) was comparable with the literature

  17. Influence of bias voltage on structural and optical properties of TiN{sub x} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Singh, Omveer, E-mail: poonia.omveer@gmail.com [Centre for Energy Studies, Indian Institute of Technology Delhi, New Delhi – 110016 (India); Dahiya, Raj P. [Centre for Energy Studies, Indian Institute of Technology Delhi, New Delhi – 110016 (India); Deenbandhu Chhotu Ram University of Science and Technology, Murthal – 131039 (India); Malik, Hitendra K.; Kumar, Parmod [Department of Physics, Indian Institute of Technology Delhi, New Delhi – 110016 (India)

    2015-08-28

    In the present work, Ti thin films were deposited on Si substrate using DC sputtering technique. Indigenous hot cathode arc discharge plasma system was used for nitriding over these samples, where the plasma parameters and work piece can be controlled independently. A mixture of H{sub 2} and N{sub 2} gases (in the ratio of 80:20) was supplied into the plasma chamber. The effect of bias voltage on the crystal structure, morphology and optical properties was investigated by employing various physical techniques such as X-ray Diffraction, Atomic Force Microscopy and UV-Vis spectrometry. It was found that bias voltage affects largely the crystal structure and band gap which in turn is responsible for the modifications in optical properties of the deposited films.

  18. Optical diagnostics of lead and PbGa2S4 layered crystal laser plasmas

    International Nuclear Information System (INIS)

    Shuaibov, A.K.; Dashchenko, A.I.; Shevera, I.V.

    2001-01-01

    Laser plasmas produced at the surfaces of lead and a PbGa 2 S 4 layered crystal irradiated by a neodymium laser with λ = 1.06 μm, pulse duration τ = 20 ns, and intensity W = (1-2) x 10 9 W/cm 2 are studied using optical diagnostics. It is shown that, in a lead plasma, the most intense (characteristic) lines are the PbI 405.7-nm, PbI 368.3-nm, PbI 364-nm, and PbII 220.4-nm lines. In a layered crystal plasma, the emission spectrum is an aggregation of the most intense PbI and GaI lines, whereas sulfur lines are absent. The bottlenecks of the recombination of the ionic and atomic components of the lead and PbGa 2 S 4 crystal plasmas are determined. The average propagation velocity of the lead laser plume is 18-20 km/s. A comparative analysis of the emission dynamics of PbI and GaI lines in the laser plasmas of these metals and in the plasma of a PbGa 2 S 4 crystal is carried out. The results obtained are important for the optical diagnostics of the plasmas of lead- and gallium-containing crystals and for the optimization of laser deposition of the thin films of these substances

  19. Characteristics of indirect laser-induced plasma from a thin film of oil on a metallic substrate

    Science.gov (United States)

    Xiu, Jun-Shan; Bai, Xue-Shi; Motto-Ros, Vincent; Yu, Jin

    2015-04-01

    Optical emissions from the major and trace elements embodied in a transparent gel prepared from cooking oil were detected after the gel was spread in a thin film on a metallic substrate. Such emissions are due to the indirect breakdown of the coating layer. The generated plasma, a mixture of substances from the substrate, the layer, and the ambient gas, was characterized using emission spectroscopy. The characteristics of the plasma formed on the metal with and without the coating layer were investigated. The results showed that Al emission induced from the aluminum substrates coated with oil films extends away from the target surface to ablate the oil film. This finally formed a bifurcating circulation of aluminum vapor against a spherical confinement wall in the front of the plume, which differed from the evolution of the plasma induced from the uncoated aluminum target. The strongest emissions of elements from the oil films can be observed at 2 mm above the target after a detection delay of 1.0 μs. A high temperature zone has been observed in the plasma after the delay of 1.0 μs for the plasma induced from the coated metal. This higher temperature determined in the plasma allows the consideration of the sensitive detection of trace elements in liquids, gels, biological samples, or thin films.

  20. Feasibility of Ultra-Thin Fiber-Optic Dosimeters for Radiotherapy Dosimetry.

    Science.gov (United States)

    Lee, Bongsoo; Kwon, Guwon; Shin, Sang Hun; Kim, Jaeseok; Yoo, Wook Jae; Ji, Young Hoon; Jang, Kyoung Won

    2015-11-17

    In this study, prototype ultra-thin fiber-optic dosimeters were fabricated using organic scintillators, wavelength shifting fibers, and plastic optical fibers. The sensor probes of the ultra-thin fiber-optic dosimeters consisted of very thin organic scintillators with thicknesses of 100, 150 and 200 μm. These types of sensors cannot only be used to measure skin or surface doses but also provide depth dose measurements with high spatial resolution. With the ultra-thin fiber-optic dosimeters, surface doses for gamma rays generated from a Co-60 therapy machine were measured. Additionally, percentage depth doses in the build-up regions were obtained by using the ultra-thin fiber-optic dosimeters, and the results were compared with those of external beam therapy films and a conventional fiber-optic dosimeter.

  1. Low temperature growth of gallium oxide thin films via plasma enhanced atomic layer deposition

    NARCIS (Netherlands)

    O'Donoghue, R.; Rechmann, J.; Aghaee, M.; Rogalla, D.; Becker, H.-W.; Creatore, M.; Wieck, A.D.; Devi, A.P.K.

    2017-01-01

    Herein we describe an efficient low temperature (60–160 °C) plasma enhanced atomic layer deposition (PEALD) process for gallium oxide (Ga2O3) thin films using hexakis(dimethylamido)digallium [Ga(NMe2)3]2 with oxygen (O2) plasma on Si(100). The use of O2 plasma was found to have a significant

  2. Investigation of plasma stream collision produced by thin films irradiated by powerful pulsed electron beam

    International Nuclear Information System (INIS)

    Efremov, V P; Demidov, B A; Ivkin, M V; Mescheryakov, A N; Petrov, V A; Potapenko, A I

    2006-01-01

    Collision of fast plasma streams in vacuum is investigated. Plasma streams were produced by irradiation of thin foils with a powerful pulsed electron beam. Interaction of the plasma flows was studied by using frame and streak cameras. One-dimensional numerical simulation was carried out. Application of this method for porous ICF targets and high-energy physics is discussed

  3. Fixation of the stressed state of glass plates by coating them with thin films using a plasma focus installation

    Science.gov (United States)

    Kolokoltsev, V. N.; Degtiarev, V. F.; Borovitskaya, I. V.; Nikulin, V. Ya.; Peregudova, E. N.; Silin, P. V.; Eriskin, A. A.

    2018-01-01

    Elastic deformation in transparent mediums is usually studied by the photoelasticity method. For opaque mediums the method of film coating and strain gauge method are used. After the external load was removed, the interference pattern corresponding to elastic deformation of the material disappears. It is found that the elastic deformation state of the thin glass plate under the action of concentrated load can be fixed during the deposition of a thin metal film. Deposition of thin copper films was carried out by passing of plasma through the copper tube installed inside the Plasma Focus installation. After removing of the load, interference pattern on the glass plates was observed in the form of Newton’s rings and isogers in non-monochromatic light on the CCD scanners which uses uorescent lamps with cold cathode. It is supposed that the copper film fixes the relief of the surface of the glass plate at the time of deformation and saves it when the load is removed. In the case of a concentrated load, this relief has the shape of a thin lens of large radius. For this reason, the interference of coherent light rays in a thin air gap between the glass of the scanners atbed and the lens surface has the shape of Newton's rings. In this case, when scanning the back side of the plate, isogyres are observed. The presented method can be used in the analysis of the mechanical stress in a various optical elements.

  4. Optical behaviour of sprayed tin sulphide thin films

    International Nuclear Information System (INIS)

    Reddy, N. Koteeswara; Reddy, K.T. Ramakrishna

    2006-01-01

    SnS films have been grown by spray pyrolysis technique on Corning 7059 glass substrates at different substrate temperatures that vary in the range of 100-450deg. C, keeping the other deposition parameters constant. The optical properties of the films were systematically studied using the optical transmittance and reflectance data. The optical absorption coefficient and optical energy band gap of the films were evaluated. The variation of refractive index and extinction coefficient with photon energy for the films grown at different temperatures were studied. The SnS films grown at the substrate temperature range 300-375deg. C, were showed an absorption coefficient >10 4 cm -1 with the energy band gap 1.32eV, measured at room temperature. For these films, the material properties such as the dielectric constants (n, n 0 , k, ε 0 and ε ∞ ), plasma frequency (ω p ), hole effective mass (m h *) and carrier density (N opt ) were also evaluated

  5. Multi-Directional Optical Diagnostics of Thermal Plasma Jets

    Czech Academy of Sciences Publication Activity Database

    Hlína, Jan; Chvála, František; Šonský, Jiří; Gruber, Jan

    2008-01-01

    Roč. 19, č. 1 (2008), s. 1-6 ISSN 0957-0233 R&D Projects: GA ČR(CZ) GA202/05/0728 Institutional research plan: CEZ:AV0Z20570509 Keywords : thermal plasma jet * optical diagnostics * Radon transform Subject RIV: BL - Plasma and Gas Discharge Physics Impact factor: 1.493, year: 2008

  6. Plasma-assisted cleaning of extreme UV optics

    NARCIS (Netherlands)

    Dolgov, Alexandr Alexeevich

    2018-01-01

    Plasma-assisted cleaning of extreme UV optics EUV-induced surface plasma chemistry of photo-active agents The next generation of photolithography, extreme ultraviolet (EUV) lithography, makes use of 13.5 nm radiation. The ionizing photon flux, and vacuum requirements create a challenging operating

  7. Quantum effects on propagation of bulk and surface waves in a thin quantum plasma film

    International Nuclear Information System (INIS)

    Moradi, Afshin

    2015-01-01

    The propagation of bulk and surface plasma waves in a thin quantum plasma film is investigated, taking into account the quantum effects. The generalized bulk and surface plasma dispersion relation due to quantum effects is derived, using the quantum hydrodynamic dielectric function and applying appropriate additional boundary conditions. The quantum mechanical and film geometric effects on the bulk and surface modes are discussed. It is found that quantum effects become important for a thin film of small thickness. - Highlights: • New bulk and surface plasma dispersion relations due to quantum effects are derived, in a thin quantum plasma film. • It is found that quantum effects become important for a thin quantum film of small thickness

  8. Electro-optical frequency shifting of lasers for plasma diagnostics

    International Nuclear Information System (INIS)

    Forman, P.R.

    1977-07-01

    An electro-optical frequency shifting device is proposed as an aid for plasma physics heterodyne interferometry and heterodyne scattering experiments. The method has the advantage over other electro-optic shifters, that a pure separable frequency shifted beam can be obtained even when less than half wave voltage is applied. (orig.) [de

  9. Electron beam manipulation, injection and acceleration in plasma wakefield accelerators by optically generated plasma density spikes

    Energy Technology Data Exchange (ETDEWEB)

    Wittig, Georg; Karger, Oliver S.; Knetsch, Alexander [Institute of Experimental Physics, University of Hamburg, 22761 Hamburg (Germany); Xi, Yunfeng; Deng, Aihua; Rosenzweig, James B. [Particle Beam Physics Laboratory, UCLA, Los Angeles, CA 90095 (United States); Bruhwiler, David L. [RadiaSoft LLC, Boulder, CO 80304 (United States); RadiaBeam Technologies LLC (United States); Smith, Jonathan [Tech-X UK Ltd, Daresbury, Cheshire WA4 4FS (United Kingdom); Sheng, Zheng-Ming; Jaroszynski, Dino A.; Manahan, Grace G. [Physics Department, SUPA, University of Strathclyde, Glasgow G4 0NG (United Kingdom); Hidding, Bernhard [Institute of Experimental Physics, University of Hamburg, 22761 Hamburg (Germany); Physics Department, SUPA, University of Strathclyde, Glasgow G4 0NG (United Kingdom)

    2016-09-01

    We discuss considerations regarding a novel and robust scheme for optically triggered electron bunch generation in plasma wakefield accelerators [1]. In this technique, a transversely propagating focused laser pulse ignites a quasi-stationary plasma column before the arrival of the plasma wake. This localized plasma density enhancement or opticalplasma torch” distorts the blowout during the arrival of the electron drive bunch and modifies the electron trajectories, resulting in controlled injection. By changing the gas density, and the laser pulse parameters such as beam waist and intensity, and by moving the focal point of the laser pulse, the shape of the plasma torch, and therefore the generated trailing beam, can be tuned easily. The proposed method is much more flexible and faster in generating gas density transitions when compared to hydrodynamics-based methods, and it accommodates experimentalists needs as it is a purely optical process and straightforward to implement.

  10. Dispersion properties of plasma cladded annular optical fiber

    Science.gov (United States)

    KianiMajd, M.; Hasanbeigi, A.; Mehdian, H.; Hajisharifi, K.

    2018-05-01

    One of the considerable problems in a conventional image transferring fiber optic system is the two-fold coupling of propagating hybrid modes. In this paper, using a simple and practical analytical approach based on exact modal vectorial analysis together with Maxwell's equations, we show that applying plasma as a cladding medium of an annular optical fiber can remove this defect of conventional fiber optic automatically without any external instrument as the polarization beam splitter. Moreover, the analysis indicates that the presence of plasma in the proposed optical fiber could extend the possibilities for controlling the propagation property. The proposed structure presents itself as a promising route to advanced optical processing and opens new avenues in applied optics and photonics.

  11. Wettability, optical properties and molecular structure of plasma polymerized diethylene glycol dimethyl ether

    Energy Technology Data Exchange (ETDEWEB)

    Azevedo, T C A M; Algatti, M A; Mota, R P; Honda, R Y; Kayama, M E; Kostov, K G; Fernandes, R S [FEG-DFQ-UNESP, Av. Ariberto Pereira da Cunha 333, 12516-410 - Guaratingueta, SP (Brazil); Cruz, N C; Rangel, E C, E-mail: algatti@feg.unesp.b [UNESP, Avenida Tres de Marco, 511, 18087-180 Sorocaba, SP (Brazil)

    2009-05-01

    Modern industry has frequently employed ethylene glycol ethers as monomers in plasma polymerization process to produce different types of coatings. In this work we used a stainless steel plasma reactor to grow thin polymeric films from low pressure RF excited plasma of diethylene glycol dimethyl ether. Plasmas were generated at 5W RF power in the range of 16 Pa to 60 Pa. The molecular structure of plasma polymerized films and their optical properties were analyzed by Fourier Transform Infrared Spectroscopy (FTIR) and Ultraviolet-Visible Spectroscopy, respectively. The IR spectra show C-H stretching at 3000-2900 cm{sup -1}, C=O stretching at 1730-1650 cm{sup -1}, C-H bending at 1440-1380 cm{sup -1}, C-O and C-O-C stretching at 1200-1000 cm{sup -1}. The refraction index was around 1.5 and the optical gap calculated from absorption coefficient presented value near 3.8 eV. Water contact angle of the films ranged from 40 deg. to 35 deg. with corresponding surface energy from 66 to 73x10{sup -7} J. Because of its favorable optical and hydrophilic characteristics these films can be used in ophthalmic industries as glass lenses coatings.

  12. Optically transparent frequency selective surfaces on flexible thin plastic substrates

    Energy Technology Data Exchange (ETDEWEB)

    Dewani, Aliya A., E-mail: a.ashraf@griffith.edu.au; O’Keefe, Steven G.; Thiel, David V.; Galehdar, Amir [School Of Electrical Engineering, Griffith University, Brisbane, 4111 (Australia)

    2015-02-15

    A novel 2D simple low cost frequency selective surface was screen printed on thin (0.21 mm), flexible transparent plastic substrate (relative permittivity 3.2). It was designed, fabricated and tested in the frequency range 10-20 GHz. The plane wave transmission and reflection coefficients agreed with numerical modelling. The effective permittivity and thickness of the backing sheet has a significant effect on the frequency characteristics. The stop band frequency reduced from 15GHz (no backing) to 12.5GHz with polycarbonate. The plastic substrate thickness beyond 1.8mm has minimal effect on the resonant frequency. While the inner element spacing controls the stop-band frequency, the substrate thickness controls the bandwidth. The screen printing technique provided a simple, low cost FSS fabrication method to produce flexible, conformal, optically transparent and bio-degradable FSS structures which can find their use in electromagnetic shielding and filtering applications in radomes, reflector antennas, beam splitters and polarizers.

  13. Optically transparent frequency selective surfaces on flexible thin plastic substrates

    Science.gov (United States)

    Dewani, Aliya A.; O'Keefe, Steven G.; Thiel, David V.; Galehdar, Amir

    2015-02-01

    A novel 2D simple low cost frequency selective surface was screen printed on thin (0.21 mm), flexible transparent plastic substrate (relative permittivity 3.2). It was designed, fabricated and tested in the frequency range 10-20 GHz. The plane wave transmission and reflection coefficients agreed with numerical modelling. The effective permittivity and thickness of the backing sheet has a significant effect on the frequency characteristics. The stop band frequency reduced from 15GHz (no backing) to 12.5GHz with polycarbonate. The plastic substrate thickness beyond 1.8mm has minimal effect on the resonant frequency. While the inner element spacing controls the stop-band frequency, the substrate thickness controls the bandwidth. The screen printing technique provided a simple, low cost FSS fabrication method to produce flexible, conformal, optically transparent and bio-degradable FSS structures which can find their use in electromagnetic shielding and filtering applications in radomes, reflector antennas, beam splitters and polarizers.

  14. Accretion disc boundary layers - geometrically and optically thin case

    International Nuclear Information System (INIS)

    Regev, Oded; Hougerat, A.A.

    1988-01-01

    The method of matched asymptotic expansions is applied to an optically and geometrically thin boundary layer between an accretion disc and the accreting star. Analytical solutions are presented for a particular viscosity prescription in the boundary layer. For a typical example we find that the disc closely resembles standard steady-disc theory. It is identical to it everywhere save a narrow boundary layer, where the temperature increases rapidly inward (by an order of magnitude), the angular velocity achieves maximum and decreases to its surface value and other variables also undergo rapid changes. This and previous work can now be used to calculate the emission from accretion discs including the boundary layers for a wide range of parameters. (author)

  15. Electromagnetic and optical characteristics of Nb5+-doped double-crossover and salmon DNA thin films

    Science.gov (United States)

    Babu Mitta, Sekhar; Reddy Dugasani, Sreekantha; Jung, Soon-Gil; Vellampatti, Srivithya; Park, Tuson; Park, Sung Ha

    2017-10-01

    We report the fabrication and physical characteristics of niobium ion (Nb5+)-doped double-crossover DNA (DX-DNA) and salmon DNA (SDNA) thin films. Different concentrations of Nb5+ ([Nb5+]) are coordinated into the DNA molecules, and the thin films are fabricated via substrate-assisted growth (DX-DNA) and drop-casting (SDNA) on oxygen plasma treated substrates. We conducted atomic force microscopy to estimate the optimum concentration of Nb5+ ([Nb5+]O = 0.08 mM) in Nb5+-doped DX-DNA thin films, up to which the DX-DNA lattices maintain their structures without deformation. X-ray photoelectron spectroscopy (XPS) was performed to probe the chemical nature of the intercalated Nb5+ in the SDNA thin films. The change in peak intensities and the shift in binding energy were witnessed in XPS spectra to explicate the binding and charge transfer mechanisms between Nb5+ and SDNA molecules. UV-visible, Raman, and photoluminescence (PL) spectra were measured to determine the optical properties and thus investigate the binding modes, Nb5+ coordination sites in Nb5+-doped SDNA thin films, and energy transfer mechanisms, respectively. As [Nb5+] increases, the absorbance peak intensities monotonically increase until ˜[Nb5+]O and then decrease. However, from the Raman measurements, the peak intensities gradually decrease with an increase in [Nb5+] to reveal the binding mechanism and binding sites of metal ions in the SDNA molecules. From the PL, we observe the emission intensities to reduce them at up to ˜[Nb5+]O and then increase after that, expecting the energy transfer between the Nb5+ and SDNA molecules. The current-voltage measurement shows a significant increase in the current observed as [Nb5+] increases in the SDNA thin films when compared to that of pristine SDNA thin films. Finally, we investigate the temperature dependent magnetization in which the Nb5+-doped SDNA thin films reveal weak ferromagnetism due to the existence of tiny magnetic dipoles in the Nb5+-doped SDNA

  16. Utilizing the ratio and the summation of two spectral lines for estimation of optical depth: Focus on thick plasmas

    Science.gov (United States)

    Rezaei, Fatemeh; Tavassoli, Seyed Hassan

    2016-11-01

    In this paper, a study is performed on the spectral lines of plasma radiations created from focusing of the Nd:YAG laser on Al standard alloys at atmospheric air pressure. A new theoretical method is presented to investigate the evolution of the optical depth of the plasma based on the radiative transfer equation, in LTE condition. This work relies on the Boltzmann distribution, lines broadening equations, and as well as the self-absorption relation. Then, an experimental set-up is devised to extract some of plasma parameters such as temperature from modified line ratio analysis, electron density from Stark broadening mechanism, line intensities of two spectral lines in the same order of ionization from similar species, and the plasma length from the shadowgraphy section. In this method, the summation and the ratio of two spectral lines are considered for evaluation of the temporal variations of the plasma parameters in a LIBS homogeneous plasma. The main advantage of this method is that it comprises the both of thin and thick laser induced plasmas without straight calculation of self-absorption coefficient. Moreover, the presented model can also be utilized for evaluation the transition of plasma from the thin condition to the thick one. The results illustrated that by measuring the line intensities of two spectral lines at different evolution times, the plasma cooling and the growth of the optical depth can be followed.

  17. Effects of in situ plasma treatment on optical and electrical properties of index-matched transparent conducting oxide layer

    International Nuclear Information System (INIS)

    Lim, Yong Hwan; Yoo, Hana; Choi, Bum Ho; Kim, Young Baek; Lee, Jong Ho; Shin, Dong Chan

    2010-01-01

    We investigated the effects of in situ plasma-treatment on optical and electrical properties of index-matched indium tin oxide (IMITO) thin film. To render the IMITO-coated surface hydrophilic and study the optical and electrical characteristics, we performed in situ oxygen plasma post-treatment without breaking vacuum. The 94.6% transmittance in the visible wavelength range (400-700 nm) increased on average to 96.4% and the maximum transmittance reached 98% over a broad wavelength range. The surface roughness and sheet resistance improved from 0.9 nm and 200 Ω/sq to 0.0905 nm and 100 Ω/sq, respectively, by in situ plasma post-treatment. We confirmed by contact angle measurement that the hydrophobic IMITO surface was altered to hydrophilic. The improved optical and electrical characteristics of in situ plasma-treated IMITO makes it adequate for high-resolution liquid crystal on silicon displays.

  18. Structure and properties of optical-discharge plasma in CO2-laser beam near target surface

    Science.gov (United States)

    Danshchikov, Ye. V.; Dymshakov, V. A.; Lebedev, F. V.; Ryazanov, A. V.

    1986-05-01

    An experimental study of optical-discharge plasma in a CO2-laser beam at a target surface was made for the purpose of exploring the not yet understood role of this plasma in the laser-target interaction process. Such a plasma was produced by means of a quasi-continuous CO2-laser with an unstable resonator, its power being maintained constant for 1 ms periods. Its radiation was focused on the surfaces of thick and seeding thin Al, Ti, and Ta targets inclined at an approximately 70 deg. angle to the beam, inside a hermetic chamber containing air, argon, or helium under atmospheric pressure. The radiation intensity distribution over the focal plane and the nearest caustic surface in the laser beam was measured along with the plasma parameters, the latter by the methods of spectral analysis and photoelectric recording. The instrumentation for this purpose included an MDR-3 monochromator with an entrance slit, a double electron-optical converter, a memory oscillograph, and an SI-10-30 ribbon lamp as radiation reference standard. The results yielded integral diametral intensity distributions of the emission lines Ti-II (457.2 nm), Ti-I (464 nm), Ar-II (462 nm), radial and axial temperature profiles of optical discharge in metal vapor in surrounding gas, and the radial temperature profile of irradiated metal surface at successive instants of time. The results reveal marked differences between the structures and the properties of optical-discharge plasma in metal vapor and in surrounding gas, optical discharge in the former being characterized by localization within the laser beam and optical discharge in the latter being characterized by a drift away from the target.

  19. Evaluation of space environmental effects on metals and optical thin films on EOIM-3

    Energy Technology Data Exchange (ETDEWEB)

    Vaughn, J.A.; Linton, R.C.; Finckenor, M.M.; Kamenetzky, R.R.

    1995-02-01

    Metals and optical thin films exposed to the space environment on the Third Flight of the Evaluation of Oxygen Interactions with Materials (EOIM-3) payload, onboard Space Shuttle mission STS-46 were evaluated. The materials effects described in this paper include the effects of space exposure on various pure metals, optical thin films, and optical thin film metals. The changes induced by exposure to the space environment in the material properties were evaluated using bidirectional reflectance distribution function (BRDF), specular reflectance (250 nm to 2500 nm), ESCA, VUV reflectance (120 nm to 200 nm), ellipsometry, FTIR and optical properties. Using these analysis techniques gold optically thin film metal mirrors with nickel undercoats were observed to darken due to nickel diffusion through the gold to the surface. Also, thin film nickel mirrors formed nickel oxide due to exposure to both the atmosphere and space.

  20. Evaluation of space environmental effects on metals and optical thin films on EOIM-3

    Science.gov (United States)

    Vaughn, Jason A.; Linton, Roger C.; Finckenor, Miria M.; Kamenetzky, Rachel R.

    1995-01-01

    Metals and optical thin films exposed to the space environment on the Third Flight of the Evaluation of Oxygen Interactions with Materials (EOIM-3) payload, onboard Space Shuttle mission STS-46 were evaluated. The materials effects described in this paper include the effects of space exposure on various pure metals, optical thin films, and optical thin film metals. The changes induced by exposure to the space environment in the material properties were evaluated using bidirectional reflectance distribution function (BRDF), specular reflectance (250 nm to 2500 nm), ESCA, VUV reflectance (120 nm to 200 nm), ellipsometry, FTIR and optical properties. Using these analysis techniques gold optically thin film metal mirrors with nickel undercoats were observed to darken due to nickel diffusion through the gold to the surface. Also, thin film nickel mirrors formed nickel oxide due to exposure to both the atmosphere and space.

  1. Structural and optical properties of electrodeposited culnSe2 thin films for photovoltaic solar cells

    International Nuclear Information System (INIS)

    Guillen, C.; Herrero, J.; Galiano, F.

    1990-01-01

    Optical an structural properties of electrodeposited copper indium diselenide, CulnSe2, thin films were studied for its application in photovoltaic devices. X-ray diffraction patterns showed that thin films were grown in chalcopyrite phase after suitable treatments. Values of Eg for the CulnSe2 thin films showed a dependence on the deposition potential as determined by optical measurements. (Author) 47 refs

  2. Some optical diagnostics for the plasma focus

    International Nuclear Information System (INIS)

    Korzhavin, V.M.

    1980-01-01

    Some aspects of studying plasma focus dynamics are reported. Particular efforts were made to develop an infrared (IR) diagnostics. The plasma focus is formed in a discharge chamber, when shock waves and plasma sheath cumulate on the axis as a result of the break-down of filling gas by the application of high voltage. The current J was measured with a Rogovsky coil, and the voltage U was measured with a capacitor divider. The current derivative was measured with magnetic probes, and X-ray and neutron emission intensities were measured with a plastic scintillator. The total neutron yield were measured by the activation method. The time-integrated soft X-ray pictures of plasma focus were taken with a pin-hole camera. The formation and disruption of plasma focus were studied by multi-picture speed photography. Laser interferometry was used to study the time-space distribution of plasma density. For the study of turbulence phenomena in plasma focus, a new type IR detector was employed. The results of measurements suggest that there exists some superthermal radiation during the second compression of plasma focus, but it is not so strong. (Kato, T.)

  3. Choroidal thinning in high myopia measured by optical coherence tomography

    Directory of Open Access Journals (Sweden)

    Ikuno Y

    2013-05-01

    Full Text Available Yasushi Ikuno, Satoko Fujimoto, Yukari Jo, Tomoko Asai, Kohji NishidaDepartment of Ophthalmology, Osaka University Graduate School of Medicine, Osaka, JapanPurpose: To investigate the rate of choroidal thinning in highly myopic eyes.Patients and methods: A retrospective observational study of 37 eyes of 26 subjects (nine males and 17 females, mean age 39.6 ± 7.7 years with high myopia but no pathologies who had undergone spectral domain optical coherence tomography and repeated the test 1 year later (1 ± 0.25 year at Osaka University Hospital, Osaka, Japan. Patients older than 50 years with visual acuity worse than 20/40 or with whitish chorioretinal atrophy involving the macula were excluded. Two masked raters measured the choroidal thicknesses (CTs at the foveda, 3 mm superiorly, inferiorly, temporally, and nasally on the images and averaged the values. The second examination was about 365 days after the baseline examination. The CT reduction per year (CTRPY was defined as (CT 1 year after - baseline CT/days between the two examinations × 365. The retinal thicknesses were also investigated.Results: The CTRPY at the fovea was −1.0 ± 22.0 µm (range –50.2 to 98.5 at the fovea, –6.5 ± 24.3 µm (range −65.8 to 90.2 temporally, –0.5 ± 22.3 µm (range –27.1 to 82.5 nasally, –9.7 ± 21.7 µm (range –40.1 to 60.1 superiorly, and –1.4 ± 25.5 µm (range –85.6 to 75.2 inferiorly. There were no significant differences in the CTRPY at each location (P = 0.34. The CT decreased significantly (P < 0.05 only superiorly. The superior CTRPY was negatively correlated with the axial length (P < 0.05. The retinal thickness at the fovea did not change. Stepwise analysis for CTRPY selected axial length (P = 0.04, R2 = 0.13 and age (P = 0.08, R2 = 0.21 as relevant factors.Conclusions: The highly myopic choroid might gradually thin and be affected by many factors. Location and axial length are key factors to regulate the rate of choroidal

  4. Optical excitations in small particles and thin films

    International Nuclear Information System (INIS)

    Fuchs, R.

    1980-01-01

    The method of local optics can be used for calculating absorption and scattering of light by a small particle or a thin film. One writes D(r,ω) = epsilon (ω)E(r,ω), and solves Maxwell's equations using standard boundary conditions. A more exact approach is to use a nonlocal dielectric constant epsilon (r-r',ω), which is the same as that of the bulk material, in the expression: D(r,ω) = ∫ epsilon (r-r',ω)E(r',ω)d 3 r'. In such a theory one disregards the modification of the dielectric constant near the surface, and the surface is taken into account approximately by introducing appropriate additional boundary conditions. A still more microscopic or exact method, applicable to a metal, is to write the equation using a dielectric constant epsilon (r,r',ω) which depends on r and r' separately. This dielectric tensor contains information about the modified response near the surface, and includes effects of surface states. Another method, applicable to infrared properties on ionic crystals, relates the optical properties to the normal mode eigenvectors and eigenvalues

  5. Effect of silane/hydrogen ratio on microcrystalline silicon thin films by remote inductively coupled plasma

    Science.gov (United States)

    Guo, Y. N.; Wei, D. Y.; Xiao, S. Q.; Huang, S. Y.; Zhou, H. P.; Xu, S.

    2013-05-01

    Hydrogenated microcrystalline silicon (μc-Si:H) thin films were prepared by remote low frequency inductively coupled plasma (ICP) chemical vapor deposition system, and the effect of silane/hydrogen ratio on the microstructure and electrical properties of μc-Si:H films was systematically investigated. As silane/hydrogen ratio increases, the crystalline volume fraction Fc decreases and the ratio of the intensity of (220) peak to that of (111) peak drops as silane flow rate is increased. The FTIR result indicates that the μc-Si:H films prepared by remote ICP have a high optical response with a low hydrogen content, which is in favor of reducing light-induced degradation effect. Furthermore, the processing window of the phase transition region for remote ICP is much wider than that for typical ICP. The photosensitivity of μc-Si:H films can exceed 100 at the transition region and this ensures the possibility of the fabrication of microcrystalline silicon thin film solar cells with a open-circuit voltage of about 700 mV.

  6. Immobilization and controlled release of drug using plasma polymerized thin film

    Energy Technology Data Exchange (ETDEWEB)

    Myung, Sung-Woon [Department of Dental Materials, School of Dentistry, MRC Center, Chosun University, 309 Pilmun-daero, Dong-gu, Gwangju (Korea, Republic of); Jung, Sang-Chul [Department of Environmental Engineering, Sunchon National University, Sunchon 540-742 (Korea, Republic of); Kim, Byung-Hoon, E-mail: kim5055@chosun.ac.kr [Department of Dental Materials, School of Dentistry, MRC Center, Chosun University, 309 Pilmun-daero, Dong-gu, Gwangju (Korea, Republic of)

    2015-06-01

    In this study, plasma polymerization of acrylic acid was employed to immobilize drug and control its release. Doxorubicin (DOX) was immobilized covalently on the glass surface deposited with plasma polymerized acrylic acid (PPAAc) thin film containing the carboxylic group. At first, the PPAAc thin film was coated on a glass surface at a pressure of 1.33 Pa and radio frequency (RF) discharge power of 20 W for 10 min. DOX was immobilized on the PPAAc deposition in a two environment of phosphate buffer saline (PBS) and dimethyl sulfoxide (DMSO) solutions. The DOX immobilized surface was characterized by scanning electron microscope, atomic force microscope and attenuated total reflection Fourier transform infrared spectroscopy. The DOX molecules were more immobilized in PBS than DMSO solution. The different immobilization and release profiles of DOX result from the solubility of hydrophobic DOX in aqueous and organic solutions. Second, in order to control the release of the drug, PPAAc thin film was covered over DOX dispersed layer. Different thicknesses and cross-linked PPAAc thin films by adjusting deposition time and RF discharge power were covered on the DOX layer dispersed. PPAAc thin film coated DOX layer reduced the release rate of DOX. The thickness control of plasma deposition allows controlling the release rate of drug. - Highlights: • Doxorubicin was immobilized on the surface of plasma polymerized acrylic acid thin film. • Release profile of doxorubicin was affected by aqueous and organic solutions. • Plasma polymerized acrylic acid thin film can be used to achieve controlled release.

  7. Immobilization and controlled release of drug using plasma polymerized thin film

    International Nuclear Information System (INIS)

    Myung, Sung-Woon; Jung, Sang-Chul; Kim, Byung-Hoon

    2015-01-01

    In this study, plasma polymerization of acrylic acid was employed to immobilize drug and control its release. Doxorubicin (DOX) was immobilized covalently on the glass surface deposited with plasma polymerized acrylic acid (PPAAc) thin film containing the carboxylic group. At first, the PPAAc thin film was coated on a glass surface at a pressure of 1.33 Pa and radio frequency (RF) discharge power of 20 W for 10 min. DOX was immobilized on the PPAAc deposition in a two environment of phosphate buffer saline (PBS) and dimethyl sulfoxide (DMSO) solutions. The DOX immobilized surface was characterized by scanning electron microscope, atomic force microscope and attenuated total reflection Fourier transform infrared spectroscopy. The DOX molecules were more immobilized in PBS than DMSO solution. The different immobilization and release profiles of DOX result from the solubility of hydrophobic DOX in aqueous and organic solutions. Second, in order to control the release of the drug, PPAAc thin film was covered over DOX dispersed layer. Different thicknesses and cross-linked PPAAc thin films by adjusting deposition time and RF discharge power were covered on the DOX layer dispersed. PPAAc thin film coated DOX layer reduced the release rate of DOX. The thickness control of plasma deposition allows controlling the release rate of drug. - Highlights: • Doxorubicin was immobilized on the surface of plasma polymerized acrylic acid thin film. • Release profile of doxorubicin was affected by aqueous and organic solutions. • Plasma polymerized acrylic acid thin film can be used to achieve controlled release

  8. Preparation of Pb(Zr, Ti)O3 Thin Films by Plasma-Assisted Sputtering

    Science.gov (United States)

    Hioki, Tsuyoshi; Akiyama, Masahiko; Ueda, Tomomasa; Onozuka, Yutaka; Suzuki, Kouji

    1999-09-01

    A novel plasma-assisted RF magnetron sputtering system with an immersed coil antenna between a target and a substrate was applied for preparing Pb(Zr, Ti)O3 (PZT) thin films. The antenna enabled the generation of inductively coupled plasma (ICP) independently of the target RF source. The plasma assisted by the antenna resulted in the changes of ion fluxes and these energy distributions irradiating to the substrate. The crystalline phase of the deposited PZT thin films was occupied by the perovskite phase depending on the antenna power. In addition, a high deposition rate, modified uniformity of film thickness, and a dense film structure with large columnar grains were obtained as a result of effects of the assisted plasma. The application of the plasma-assisted sputtering method may enable the preparation of PZT thin films that haveexcellent properties.

  9. Non-linear optics of nano-scale pentacene thin film

    Science.gov (United States)

    Yahia, I. S.; Alfaify, S.; Jilani, Asim; Abdel-wahab, M. Sh.; Al-Ghamdi, Attieh A.; Abutalib, M. M.; Al-Bassam, A.; El-Naggar, A. M.

    2016-07-01

    We have found the new ways to investigate the linear/non-linear optical properties of nanostructure pentacene thin film deposited by thermal evaporation technique. Pentacene is the key material in organic semiconductor technology. The existence of nano-structured thin film was confirmed by atomic force microscopy and X-ray diffraction. The wavelength-dependent transmittance and reflectance were calculated to observe the optical behavior of the pentacene thin film. It has been observed the anomalous dispersion at wavelength λ 800. The non-linear refractive index of the deposited films was investigated. The linear optical susceptibility of pentacene thin film was calculated, and we observed the non-linear optical susceptibility of pentacene thin film at about 6 × 10-13 esu. The advantage of this work is to use of spectroscopic method to calculate the liner and non-liner optical response of pentacene thin films rather than expensive Z-scan. The calculated optical behavior of the pentacene thin films could be used in the organic thin films base advanced optoelectronic devices such as telecommunications devices.

  10. Viscoelastic optical nonlocality of doped cadmium oxide epsilon-near-zero thin films

    Energy Technology Data Exchange (ETDEWEB)

    Luk, Ting S.; De Ceglia, Domenico; Scalora, Michael; Vincenti, Maria A.; Campione, Salvatore; Kelley, Kyle; Maria, Jon-Paul; Keeler, Gordon A.

    2017-08-01

    Optical nonlocalities are elusive and hardly observable in traditional plasmonic materials like noble and alkali metals. Here we experimentally observe and theoretically model viscoelastic nonlocalities in the infrared optical response of a doped, cadmium oxide epsilon-near-zero thin film. The nonlocality is clearly detectable thanks to the low damping rate of conduction electrons and the virtual absence of interband transitions at infrared wavelengths. We describe the motion of conduction electrons using a hydrodynamic model for a viscoelastic fluid, and find excellent agreement with experimental results. The electrons’ elasticity blue-shifts the infrared plasmonic resonance associated with the main epsilon-near-zero mode, and triggers the onset of higher-order resonances due to the excitation of electron-pressure modes above the bulk plasma frequency. We also provide evidence of the existence of nonlocal damping, i.e., viscosity, in the motion of optically-excited conduction electrons using a combination of spectroscopic ellipsometry data and predictions based on the viscoelastic hydrodynamic model.

  11. Determination of the optical absorption spectra of thin layers from their photoacoustic spectra

    Science.gov (United States)

    Bychto, Leszek; Maliński, Mirosław; Patryn, Aleksy; Tivanov, Mikhail; Gremenok, Valery

    2018-05-01

    This paper presents a new method for computations of the optical absorption coefficient spectra from the normalized photoacoustic amplitude spectra of thin semiconductor samples deposited on the optically transparent and thermally thick substrates. This method was tested on CuIn(Te0.7Se0.3)2 thin films. From the normalized photoacoustic amplitude spectra, the optical absorption coefficient spectra were computed with the new formula as also with the numerical iterative method. From these spectra, the value of the energy gap of the thin film material and the type of the optical transitions were determined. From the experimental optical transmission spectra, the optical absorption coefficient spectra were computed too, and compared with the optical absorption coefficient spectra obtained from photoacoustic spectra.

  12. Pulsed Plasma Polymerization of Perfluorooctyl Ethylene for Transparent Hydrophobic Thin Coatings

    International Nuclear Information System (INIS)

    Liu Xiaojun; Wang Lei; Hao Jie; Chu Liqiang

    2015-01-01

    Herein we report on the deposition of transparent hydrophobic thin coatings by radio frequency plasma polymerization (PP) of perfluorooctyl ethylene (PFOE) in both pulsed and continuous wave (CW) modes. The chemical compositions of the resulting PP-PFOE coatings were confirmed by means of Fourier transform infrared spectroscopy (FT-IR) and X-ray photoelectron spectroscopy (XPS). The thicknesses and surface morphologies of the coatings were examined using surface plasmon resonance spectroscopy and atomic force microscopy. The surface wetting properties and optical transmittance were measured using a water contact angle goniometer and UV-vis spectroscopy. The FT-IR and XPS data showed that the PP-PFOE coatings deposited in the pulsed mode had a higher retention of CF 2 groups compared to those from the CW mode. While the water contact angle of the freshly deposited PP-PFOE from the pulsed mode showed a decrease from 120 degrees to 111 degrees in the first two days, it then remained almost unchanged up to 45 days. The UV-vis data indicated that a PP-PFOE coating 30.6 nm thick had a light transmittance above 90% in the UV and visible ranges. The deposition rates under various plasma conditions are also discussed. (paper)

  13. Thin film technologies for optoelectronic components in fiber optic communication

    Science.gov (United States)

    Perinati, Agostino

    1998-02-01

    will grow at an annual average rate of 22 percent from 1.3 million fiber-km in 1995 to 3.5 million fiber-km in 2000. The worldwide components market-cable, transceivers and connectors - 6.1 billion in 1994, is forecasted to grow and show a 19 percent combined annual growth rate through the year 2000 when is predicted to reach 17.38 billion. Fiber-in-the-loop and widespread use of switched digital services will dominate this scenario being the fiber the best medium for transmitting multimedia services. As long as communication will partially replace transportation, multimedia services will push forward technology for systems and related components not only for higher performances but for lower cost too in order to get the consumers wanting to buy the new services. In the long distance transmission area (trunk network) higher integration of electronic and optoelectronic functions are required for transmitter and receiver in order to allow for higher system speed, moving from 2.5 Gb/s to 5, 10, 40 Gb/s; narrow band wavelength division multiplexing (WDM) filters are required for higher transmission capacity through multiwavelength technique and for optical amplifier. In the access area (distribution network) passive components as splitters, couplers, filters are needed together with optical amplifiers and transceivers for point-to-multipoint optical signal distribution: main issue in this area is the total cost to be paid by the customer for basic and new services. Multimedia services evolution, through fiber to the home and to the desktop approach, will be mainly affected by the availability of technologies suitable for component consistent integration, high yield manufacturing processes and final low cost. In this paper some of the optoelectronic components and related thin film technologies expected to mainly affect the fiber optic transmission evolution, either for long distance telecommunication systems or for subscriber network, are presented.

  14. Linear birefringence and optical ativity in a magnetized plasma

    International Nuclear Information System (INIS)

    Vuolo, J.H.; Galvao, R.M.O.

    1982-02-01

    Linear birefringence and optical activity are considered separately to electromagnetic wave propagation in magnetized cold plasma, using frequency approximation much bigger than plasma frequency. It's showen that in some interesting cases, those phenomena could be independents. Explicit expressions are obtained for refraction indices to linear birefringency and optical activity. The correspondents indices attenuation aRe obtained in first orden of attenuation. It's showen that the characteristic states for linear dichroism coincide with the characteristic states for linear birefringence. The characteristic states for elliptic dichroism are obtained. (M.A.F.) [pt

  15. Properties of thin films deposited from HMDSO/O2 induced remote plasma: Effect of oxygen fraction

    International Nuclear Information System (INIS)

    Saloum, S.; Naddaf, M.; Al-Khaled, B.

    2008-01-01

    Thin films deposited from hexamethyle disiloxane (HMDSO)/O 2 mixture excited in a radio-frequency hollow cathode discharge system have been investigated for their structural, optical and corrosive properties as a function of oxygen fraction χo 2 (χo 2 =0, 0.38, 0.61, 0.76 and 0.90). It is found that the effect of oxygen fraction on films properties is related to O 2 dissociation degree (αd) behavior in pure oxygen plasma. αd has been investigated by actinometry optical emission spectroscopy (AOES) combined with double langmuir probe measurements, a maximum of O 2 dissociation degree of 15% has been obtained for 50 sccm flow rate of O 2 (χo 2 =0.61 in HMDSO/O 2 plasma). Fourier transform infrared spectroscopy (FTIR) and optical measurements showed that the behavior of both identified IR group densities and deposition rate as a function of oxygen fraction is similar to that of O 2 dissociation degree. The inorganic nature of the films depends significantly on oxygen fraction, the best inorganic structure of deposited films has been obtained for 62% HMDSO content in the mixture HMDSO/O 2 (χo 2 =0.38). The refractive index for deposited films from pure HMDSO(χo 2 =0) has been found to be higher than that of films deposited from HMDSO/O 2 mixture. In HMDSO/O 2 plasma, it has a behavior similar to that of deposition rate, and it is comparable to that of quartz. The effect of oxygen fraction on the corrosive properties of thin films deposited on steel has been investigated. It is found that the measured corrosion current density in 0.1 M KCI solution decreases with the addition of O 2 to HMDSO plasma, and it is minimum for χo 2 =0.38. (author)

  16. Silicon-integrated thin-film structure for electro-optic applications

    Science.gov (United States)

    McKee, Rodney A.; Walker, Frederick Joseph

    2000-01-01

    A crystalline thin-film structure suited for use in any of an number of electro-optic applications, such as a phase modulator or a component of an interferometer, includes a semiconductor substrate of silicon and a ferroelectric, optically-clear thin film of the perovskite BaTiO.sub.3 overlying the surface of the silicon substrate. The BaTiO.sub.3 thin film is characterized in that substantially all of the dipole moments associated with the ferroelectric film are arranged substantially parallel to the surface of the substrate to enhance the electro-optic qualities of the film.

  17. Effect of O2 plasma immersion on electrical properties and transistor performance of indium gallium zinc oxide thin films

    International Nuclear Information System (INIS)

    Liu, P.; Chen, T.P.; Liu, Z.; Tan, C.S.; Leong, K.C.

    2013-01-01

    Evolution of electrical properties and thin-film transistor characteristics of amorphous indium gallium zinc oxide (IGZO) thin films synthesized by RF sputtering with O 2 plasma immersion has been examined. O 2 plasma immersion results in an enhancement in the Hall mobility and a decrease in the electron concentration; and the transistor performance can be greatly improved by the O 2 plasma immersion. X-ray photoelectron spectroscopy analysis indicates that the effect of O 2 plasma immersion on the electrical properties and the transistor performance can be attributed to the reduction of the oxygen-related defects in the IGZO thin films. - Highlights: • Oxygen plasma immersion effect on indium gallium zinc oxide thin film properties • Oxygen-related defect reduces in the InGaZnO thin film with oxygen plasma immersion. • Increasing oxygen plasma immersion duration on device will decrease the off current. • Oxygen plasma immersion enhances the performance of device

  18. On the Nature and Extent of Optically Thin Marine low Clouds

    Science.gov (United States)

    Leahy, L. V.; Wood, R.; Charlson, R. J.; Hostetler, C. A.; Rogers, R. R.; Vaughan, M. A.; Winker, D. M.

    2012-01-01

    Macrophysical properties of optically thin marine low clouds over the nonpolar oceans (60 deg S-60 deg N) are measured using 2 years of full-resolution nighttime data from the Cloud-Aerosol Lidar with Orthogonal Polarization (CALIOP). Optically thin clouds, defined as the subset of marine low clouds that do not fully attenuate the lidar signal, comprise almost half of the low clouds over the marine domain. Regionally, the fraction of low clouds that are optically thin (f(sub thin,cld)) exhibits a strong inverse relationship with the low-cloud cover, with maxima in the tropical trades (f(sub thin,cld) greater than 0.8) and minima in regions of persistent marine stratocumulus and in midlatitudes (f(sub thin,cld) less than 0.3). Domain-wide, a power law fit describes the cloud length distribution, with exponent beta = 2.03 +/- 0.06 (+/-95% confidence interval). On average, the fraction of a cloud that is optically thin decreases from approximately 1 for clouds smaller than 2 km to less than 0.3 for clouds larger than 30 km. This relationship is found to be independent of region, so that geographical variations in the cloud length distribution explain three quarters of the variance in f(sub thin,cld). Comparing collocated trade cumulus observations from CALIOP and the airborne High Spectral Resolution Lidar reveals that clouds with lengths smaller than are resolvable with CALIOP contribute approximately half of the low clouds in the region sampled. A bounded cascade model is constructed to match the observations from the trades. The model shows that the observed optically thin cloud behavior is consistent with a power law scaling of cloud optical depth and suggests that most optically thin clouds only partially fill the CALIOP footprint.

  19. Optically transparent frequency selective surfaces on flexible thin plastic substrates

    Directory of Open Access Journals (Sweden)

    Aliya A. Dewani

    2015-02-01

    Full Text Available A novel 2D simple low cost frequency selective surface was screen printed on thin (0.21 mm, flexible transparent plastic substrate (relative permittivity 3.2. It was designed, fabricated and tested in the frequency range 10-20 GHz. The plane wave transmission and reflection coefficients agreed with numerical modelling. The effective permittivity and thickness of the backing sheet has a significant effect on the frequency characteristics. The stop band frequency reduced from 15GHz (no backing to 12.5GHz with polycarbonate. The plastic substrate thickness beyond 1.8mm has minimal effect on the resonant frequency. While the inner element spacing controls the stop-band frequency, the substrate thickness controls the bandwidth. The screen printing technique provided a simple, low cost FSS fabrication method to produce flexible, conformal, optically transparent and bio-degradable FSS structures which can find their use in electromagnetic shielding and filtering applications in radomes, reflector antennas, beam splitters and polarizers.

  20. Titanium dioxide (TIO2) thin film and plasma properties in RF magnetron sputtering

    International Nuclear Information System (INIS)

    Ali, Riyaz Ahmad Mohamed; Nayan, Nafarizal

    2013-01-01

    Lately, titanium dioxide (TiO 2 ) films with anatase crystalline property received numerous attentions as unique material properties. There are wide applications of TiO 2 thin film such as for photocatalytic application in solar cell. In the present study, radio frequency (RF) magnetron sputtering technique has been used to produce high dense, homogeneously controllable film layer at low deposition temperature using titanium (Ti) target. The diameter of the Ti target is 3 inch with fixed discharge power of 400W. Magnetron sputtering plasma has been produced in high purity 99.99% Argon (Ar) and 99.99% Oxygen (O 2 ) environment pressure ranging from 5 to 20 mTorr. The TiO2 were growth on silicon and glass substrates. Substrate temperature during deposition was kept constant at 400°C. The distance between target and substrate holder was maintain at 14 cm with rotation of 10 rotation-per-minutes. Our X-ray diffraction result, shows anatase crystalline successfully formed with characterization peaks of plane (101) at 2θ = 25.28°, plane (202) at 2θ = 48.05° and plane (211) at 2θ = 55.06°. In addition, it is our interest to study the plasma properties and optical spectrum of Ti, Ti+ , O- , ArM and Ar+ in the chamber during the deposition process. Result of emission line intensities, electron density and temperature from optical spectroscope and Langmuir probe will be discuss further during the workshop. This works were supported by Graduate Incentive Scheme of Universiti Tun Hussein Onn Malaysia (UTHM) and Fundamental Research Grant Scheme of Ministry of Higher Education, Malaysia. (author)

  1. A comparative study of the physical properties of Sb2S3 thin films treated with N2 AC plasma and thermal annealing in N2

    International Nuclear Information System (INIS)

    Calixto-Rodriguez, M.; Martinez, H.; Pena, Y.; Flores, O.; Esparza-Ponce, H.E.; Sanchez-Juarez, A.; Campos-Alvarez, J.; Reyes, P.

    2010-01-01

    As-deposited antimony sulfide thin films prepared by chemical bath deposition were treated with nitrogen AC plasma and thermal annealing in nitrogen atmosphere. The as-deposited, plasma treated, and thermally annealed antimony sulfide thin films have been characterized by X-ray diffraction (XRD), energy dispersive X-ray spectroscopy, scanning electron microscopy, atomic force microscopy, UV-vis spectroscopy, and electrical measurements. The results have shown that post-deposition treatments modify the crystalline structure, the morphology, and the optoelectronic properties of Sb 2 S 3 thin films. X-ray diffraction studies showed that the crystallinity of the films was improved in both cases. Atomic force microscopy studies showed that the change in the film morphology depends on the post-deposition treatment used. Optical emission spectroscopy (OES) analysis revealed the plasma etching on the surface of the film, this fact was corroborated by the energy dispersive X-ray spectroscopy analysis. The optical band gap of the films (E g ) decreased after post-deposition treatments (from 2.36 to 1.75 eV) due to the improvement in the grain sizes. The electrical resistivity of the Sb 2 S 3 thin films decreased from 10 8 to 10 6 Ω-cm after plasma treatments.

  2. Two-dimensional models for the optical response of thin films

    Science.gov (United States)

    Li, Yilei; Heinz, Tony F.

    2018-04-01

    In this work, we present a systematic study of 2D optical models for the response of thin layers of material under excitation by normally incident light. The treatment, within the framework of classical optics, analyzes a thin film supported by a semi-infinite substrate, with both the thin layer and the substrate assumed to exhibit local, isotropic linear response. Starting from the conventional three-dimensional (3D) slab model of the system, we derive a two-dimensional (2D) sheet model for the thin film in which the optical response is described by a sheet optical conductivity. We develop criteria for the applicability of this 2D sheet model for a layer with an optical thickness far smaller than the wavelength of the light. We examine in detail atomically thin semi-metallic and semiconductor van-der-Waals layers and ultrathin metal films as representative examples. Excellent agreement of the 2D sheet model with the 3D slab model is demonstrated over a broad spectral range from the radio frequency limit to the near ultraviolet. A linearized version of system response for the 2D model is also presented for the case where the influence of the optically thin layer is sufficiently weak. Analytical expressions for the applicability and accuracy of the different optical models are derived, and the appropriateness of the linearized treatment for the materials is considered. We discuss the advantages, as well as limitations, of these models for the purpose of deducing the optical response function of the thin layer from experiment. We generalize the theory to take into account in-plane anisotropy, layered thin film structures, and more general substrates. Implications of the 2D model for the transmission of light by the thin film and for the implementation of half- and totally absorbing layers are discussed.

  3. AC plasma induced modifications in Sb{sub 2}S{sub 3} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Calixto-Rodriguez, M; Martinez, H [Instituto de Ciencias Fisicas, Universidad Nacional Autonoma de Mexico, Apartado Postal 48-3, 62210, Cuernavaca, Morelos (Mexico); Castillo, F [Instituto de Ciencias Nucleares, Universidad Nacional Autonoma de Mexico, Apartado Postal 70-543, 04510, Mexico D. F. (Mexico); Pena, Y [Universidad Autonoma de Nuevo Leon, Facultad de Ciencias Quimicas, Pedro de Alba s/n, Cd. Universitaria, San Nicolas de los Garza, N.L (Mexico); Sanchez-Juarez, A, E-mail: ciro@nucleares.unam.m [Centro de Investigacion en EnergIa, Universidad Nacional Autonoma de Mexico, Privada Xochicalco s/n Col. Centro, Temixco, Morelos, C.P. 62580 (Mexico)

    2010-01-01

    Sb{sub 2}S{sub 3} thin films, deposited by the chemical bath deposition method, were treated with N{sub 2} plasma at 3.0 Torr during several minutes. The as-prepared Sb{sub 2}S{sub 3} thin films and films treated with N{sub 2} plasma have been characterized using several techniques. X-ray diffraction studies have shown that plasma treatment induced recrystallization on the as-prepared Sb{sub 2}S{sub 3}thin films. The band gap values decreased from 2.37 to 1.82 eV after plasma treatment, and the electrical conductivity increased from 10{sup 9} to 10{sup 7} ({Omega}cm){sup -1} due to the annealing effect.

  4. Experimental study of the plasma fluorination of Y-Ba-Cu-O thin films

    CERN Document Server

    Li Qi; Ji Zheng Ming; Feng Yi Jun; Kang Lin; Yang Sen Zu; Wu Pei Heng; Wang Xiao Shu; Ye Yuda

    2002-01-01

    The authors have experimentally studied the surface modifications of Y-Ba-Cu-O (YBCO) thin films using CF sub 4 plasma. The intensity of the plasma fluorination was controlled by changing the biasing voltage and the time of the plasma treatment. Microstructural analyses reveal that the oxygen content of the YBCO thin films was changed. Transport measurements of sufficient fluorinated YBCO films imply that the films changed totally into an oxygen-deficient semi-conducting state. From these experimental results, the authors believe that plasma fluorination is quite a useful method to form controllable a thin barrier layer in fabricating interface engineered junctions and to form a stable narrow weak-link region in fabricating planar superconductor-normal-superconductor junctions

  5. Thin combiner optics utilizing volume holographic optical elements (vHOEs) using Bayfol HX photopolymer film

    Science.gov (United States)

    Bruder, Friedrich-Karl; Fäcke, Thomas; Hagen, Rainer; Hansen, Sven; Manecke, Christel; Orselli, Enrico; Rewitz, Christian; Rölle, Thomas; Walze, Günther

    2017-06-01

    The main function of any augmented reality system is to seamlessly merge the real world perception of a viewer with computer generated images and information. Besides real-time head-tracking and room-scanning capabilities the combiner optics, which optically merge the natural with the artificial visual information, represent a key component for those systems. Various types of combiner optics are known to the industry, all with their specific advantages and disadvantages. Beside the well-established solutions based on refractive optics or surface gratings, volume Holographic Optical Elements (vHOEs) are a very attractive alternative in this field. The unique characteristics of these diffractive grating structures - being lightweight, thin, flat and invisible in Off Bragg conditions - make them perfectly suitable for their use in integrated and compact combiners. For any consumer application it is paramount to build unobtrusive and lightweight augmented reality displays, for which those volume holographic combiners are ideally suited. Due to processing challenges of (historic) holographic recording materials mass production of vHOE holographic combiners was not possible. Therefore vHOE based combiners found use in military applications only by now. The new Bayfol® HX instant developing holographic photopolymer film provides an ideal technology platform to optimize the performance of vHOEs in a wide range of applications. Bayfol® HX provides full color capability and adjustable diffraction efficiency as well as an unprecedented optical clarity when compared to classical holographic recording materials like silver halide emulsions (AgHX) or dichromated gelatin (DCG). Bayfol® HX film is available in industrial scale and quality. Its properties can be tailored for various diffractive performances and integration methods. Bayfol® HX film is easy to process without any need for chemical or thermal development steps, offering simplified contact-copy mass production

  6. Optical and electrical properties of thin films of bismuth ferric oxide

    International Nuclear Information System (INIS)

    Cardona R, D.

    2014-01-01

    The bismuth ferric oxide (BFO) has caused great attention in recent years because of their multi ferric properties, making it very attractive for different technological applications. In this paper simultaneous ablation of two white (Bi and Fe 2 O 3 ) was used in a reactive atmosphere (containing oxygen) to deposit thin films of BFO. The composition of the films is changed by controlling the plasma parameters such as the average kinetic energy of the ions (E p) and the plasma density (Np). The effects caused by excess of Bi and Fe in atomic structure and the optical and electrical properties of the films BiFeO 3 in terms of plasma parameters were studied. The X-ray diffraction patterns of BFO samples with excess of bismuth above 2% at. They exhibited small changes in structure leading to improved levels of leakage currents compared to levels of the film with a stoichiometry close to BiFeO 3 composition. These samples showed a secondary phase (Bi 2 5FeO 4 0 selenite type) that led to the increase in the values of band gap and resistivity as well as the improvement of the piezoelectric properties. On the other hand, the films with iron excess showed as secondary phase compounds of iron oxide (α - γ-Fe 2 O 3 ) that caused increments in the conductivity and decrease in the values of band gap. The results are discussed in terms of the excesses of Bi and Fe which were correlated with the plasma parameters. (Author)

  7. Atomic data of Ti II from laser produced Ti plasmas by optical emission spectroscopy

    International Nuclear Information System (INIS)

    Refaie, A.I.; Farrag, A.A.; El Sharkawy, H.; El Sherbini, T.M.

    2005-06-01

    In the present study, the emission spectrum of titanium produced from laser induced plasma has been measured at different distances from the target. The Titanium target is irradiated by using the high power Q-switched Nd:YAG laser (λ=1064 nm) that generates energy 750 mJ/pulse of duration rate 6 ns and repetition rate 10 Hz in vacuum and at different distances. The variation of the distance from the target affects the measured plasma parameters, i.e. the electron density, the ion temperature and the velocity distribution. The electron density increases with the increase of the distance from the target. At a distance 0.6 mm from the target it decreases to 2.28·10 16 cm -3 . The temperature increases with the distance from the get until a distance of 1 mm, after that it decreases. It is found that the plasma velocity increases with the distance then it decreases again. Then, Energy levels and transition probabilities for 3d 2 4p →(3d 2 4s + 3d 3 ) lines have been determined by measurement of emission line intensities from an optically thin laser produced plasma of Ti II in vacuum. Calculations with intermediate coupling using Hartree-Fock wave functions have been carried out in order to place the experimental data on an absolute scale and also to evaluate the lifetimes. The plasma parameters in different regions of the plasma plume have been measured and used to obtain further transition probabilities. (author)

  8. Plasma Channel Lenses and Plasma Tornadoes for Optical Beam Focusing and Transport

    Science.gov (United States)

    Hubbard, R. F.; Kaganovich, D.; Johnson, L. A.; Gordon, D. F.; Penano, J. R.; Hafizi, B.; Helle, M. H.; Mamonau, A. A.

    2017-10-01

    Shaped plasmas offer the possibility of manipulating laser pulses at intensities far above the damage limits for conventional optics. An example is the plasma channel, which is a cylindrical plasma column with an on-axis density minimum. Long plasma channels have been widely used to guide intense laser pulses, particularly in laser wakefield accelerators. A new concept, the ``plasma tornado'', offers the possibility of creating long plasma channels with no nearby structures and at densities lower than can be achieved by capillary discharges. A short plasma channel can focus a laser pulse in much the same manner as a conventional lens or off-axis parabola. When placed in front of the focal point of an intense laser pulse, a plasma channel lens (PCL) can reduce the effective f-number of conventional focusing optics. When placed beyond the focal point, it can act as a collimator. We will present experimental and modeling results for a new plasma tornado design, review experimental methods for generating short PCLs, and discuss potential applications. Supported by the Naval Research Laboratory Base Program.

  9. Synthesis of Cu2O from CuO thin films: Optical and electrical properties

    Directory of Open Access Journals (Sweden)

    Dhanya S. Murali

    2015-04-01

    Full Text Available Hole conducting, optically transparent Cu2O thin films on glass substrates have been synthesized by vacuum annealing (5×10−6 mbar at 700 K for 1 hour of magnetron sputtered (at 300 K CuO thin films. The Cu2O thin films are p-type and show enhanced properties: grain size (54.7 nm, optical transmission 72% (at 600 nm and Hall mobility 51 cm2/Vs. The bulk and surface Valence band spectra of Cu2O and CuO thin films are studied by temperature dependent Hall effect and Ultra violet photo electron Spectroscopy (UPS. CuO thin films show a significant band bending downwards (due to higher hole concentration than Cu2O thin films.

  10. Structural, optical and nonlinear optical studies of AZO thin film prepared by SILAR method for electro-optic applications

    Science.gov (United States)

    Edison, D. Joseph; Nirmala, W.; Kumar, K. Deva Arun; Valanarasu, S.; Ganesh, V.; Shkir, Mohd.; AlFaify, S.

    2017-10-01

    Aluminium doped (i.e. 3 at%) zinc oxide (AZO) thin films were prepared by simple successive ionic layer adsorption and reaction (SILAR) method with different dipping cycles. The structural and surface morphology of AZO thin films were studied by using X-ray diffraction (XRD) and scanning electron microscopy (SEM). The optical parameters such as, transmittance, band gap, refractive index, extinction coefficient, dielectric constant and nonlinear optical properties of AZO films were investigated. XRD pattern revealed the formation of hexagonal phase ZnO and the intensity of the film was found to increase with increasing dipping cycle. The crystallite size was found to be in the range of 29-37 nm. Scanning Electron Microscope (SEM) images show the presence of small sized grains, revealing that the smoothest surface was obtained at all the films. The EDAX spectrum of AZO conforms the presence of Zn, O and Al. The optical transmittance in the visible region is high 87% and the band gap value is 3.23 eV. The optical transmittance is decreased with respect to dipping cycles. The room temperature PL studies revealed that the AZO films prepared at (30 cycles) has good film quality with lesser defect density. The third order nonlinear optical parameters were also studied using Z-scan technique to know the applications of deposited films in nonlinear devices. The third order nonlinear susceptibility value is found to be 1.69 × 10-7, 3.34 × 10-8, 1.33 × 10-7and 2.52 × 10-7 for AZO films deposited after 15, 20, 25 and 30 dipping cycles.

  11. Optical properties of Cd Se thin films obtained by pyrolytic dew

    International Nuclear Information System (INIS)

    Perez G, A.M.; Tepantlan, C.S.; Renero C, F.

    2006-01-01

    In this paper the optical properties of Cd Se thin films obtained by spray pyrolysis are presented. The films are prepared by Sodium Seleno sulphate (Na 2 SSeO 3 ) and Cadmium Chloride (CdC 12 ) mixing in aqueous environment. Optical parameters of the films (refractive index, absorption coefficient and optical ban gap) were calculated from transmittance spectra. The obtained values of the optical ban gap are compared with the result obtained by other deposition method. (Author)

  12. Determination and analysis of dispersive optical constants of some organic thin films

    International Nuclear Information System (INIS)

    Kaya, Y.; Taysioglu, A. A.; Peksoez, A.; Irez, G.; Derebasi, N.; Kaynak, G.

    2010-01-01

    Schiff bases are an important class of ligands in coordination chemistry and find extensive application in different fields. Recently, increased interest in organic thin film materials has arisen due to their extensive applications in the fields of mechanics, flexible electronics and optics. Optoelectronics is the area in which organic films and organic-inorganic nanostructures have found their main applications in the last decade. These organic thin films have been also used in a wide variety of applications such as Schottky diodes, solid state devices and optical sensors. The optical constants (refractive index, n; extinction coefficient, k and dielectric constant, e) of some organic thin films were determined using reflectance and transmittance spectra. Analysis of the basis absorption spectra was also carried out to determine optical band gap (Eg) and Urbach parameter (E0). A surface observation of these thin films was also carried out by an Atomic Force Microscope.

  13. Glow discharge optical emission spectroscopy for accurate and well resolved analysis of coatings and thin films

    KAUST Repository

    Wilke, Marcus; Teichert, Gerd; Gemma, Ryota; Pundt, Astrid; Kirchheim, Reiner; Romanus, Henry; Schaaf, Peter

    2011-01-01

    overview on new developments in instrument design for accurate and well resolved thin film analyses is presented. The article focuses on the analytical capabilities of glow discharge optical emission spectrometry in the analysis of metallic coatings

  14. Atmospheric Pressure Plasma Jet-Assisted Synthesis of Zeolite-Based Low-k Thin Films.

    Science.gov (United States)

    Huang, Kai-Yu; Chi, Heng-Yu; Kao, Peng-Kai; Huang, Fei-Hung; Jian, Qi-Ming; Cheng, I-Chun; Lee, Wen-Ya; Hsu, Cheng-Che; Kang, Dun-Yen

    2018-01-10

    Zeolites are ideal low-dielectric constant (low-k) materials. This paper reports on a novel plasma-assisted approach to the synthesis of low-k thin films comprising pure-silica zeolite MFI. The proposed method involves treating the aged solution using an atmospheric pressure plasma jet (APPJ). The high reactivity of the resulting nitrogen plasma helps to produce zeolite crystals with high crystallinity and uniform crystal size distribution. The APPJ treatment also remarkably reduces the time for hydrothermal reaction. The zeolite MFI suspensions synthesized with the APPJ treatment are used for the wet deposition to form thin films. The deposited zeolite thin films possessed dense morphology and high crystallinity, which overcome the trade-off between crystallinity and film quality. Zeolite thin films synthesized using the proposed APPJ treatment achieve low leakage current (on the order of 10 -8 A/cm 2 ) and high Young's modulus (12 GPa), outperforming the control sample synthesized without plasma treatment. The dielectric constant of our zeolite thin films was as low as 1.41. The overall performance of the low-k thin films synthesized with the APPJ treatment far exceed existing low-k films comprising pure-silica MFI.

  15. Nonlinear optical parameters of nanocrystalline AZO thin film measured at different substrate temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Jilani, Asim, E-mail: asim.jilane@gmail.com [Centre of Nanotechnology, King Abdulaziz University, Jeddah (Saudi Arabia); Abdel-wahab, M.Sh [Centre of Nanotechnology, King Abdulaziz University, Jeddah (Saudi Arabia); Materials Science and Nanotechnology Department, Faculty of Postgraduate Studies for Advanced Sciences, Beni -Suef University, Beni-Suef (Egypt); Al-ghamdi, Attieh A. [Centre of Nanotechnology, King Abdulaziz University, Jeddah (Saudi Arabia); Dahlan, Ammar sadik [Department of architecture, faculty of environmental design, King Abdulaziz University, Jeddah (Saudi Arabia); Yahia, I.S. [Department of Physics, Faculty of Science, King Khalid University, P.O. Box 9004, Abha (Saudi Arabia); Nano-Science & Semiconductor Labs, Department of Physics, Faculty of Education, Ain Shams University, Roxy, 11757 Cairo (Egypt)

    2016-01-15

    The 2.2 wt% of aluminum (Al)-doped zinc oxide (AZO) transparent and preferential c-axis oriented thin films were prepared by using radio frequency (DC/RF) magnetron sputtering at different substrate temperature ranging from room temperature to 200 °C. For structural analysis, X-ray Diffraction (XRD) and Atomic Force Electron Microscope (AFM) was used for morphological studies. The optical parameters such as, optical energy gap, refractive index, extinction coefficient, dielectric loss, tangent loss, first and third order nonlinear optical properties of transparent films were investigated. High transmittance above 90% and highly homogeneous surface were observed in all samples. The substrate temperature plays an important role to get the best transparent conductive oxide thin films. The substrate temperature at 150 °C showed the growth of highly transparent AZO thin film. Energy gap increased with the increased in substrate temperature of Al doped thin films. Dielectric constant and loss were found to be photon energy dependent with substrate temperature. The change in substrate temperature of Al doped thin films also affect the non-liner optical properties of thin films. The value of χ{sup (3)} was found to be changed with the grain size of the thin films that directly affected by the substrate temperature of the pure and Al doped ZnO thin films.

  16. High speed manyframe optical methods for plasma diagnostics

    International Nuclear Information System (INIS)

    Erokhin, A.A.; Shikanov, A.S.; Sklizkov, G.V.; Zakharenkov, Yu.A.; Zorev, N.N.

    1979-01-01

    A complex of active optical plasma and strong ionized shock wave diagnostics is described. The complex consisted of a specially developed high speed manyframe systems of shadow, schlieren and interferometric photography. The comparison of results obtained by a simultaneous registration of investigated object by means of different optical methods allowed us to determine optimal employment range for the methods. The sensitivity, temporal and space resolution of each optical method under conditions of high probe radiation refraction are discussed. The application boundaries of these methods for ionized shock wave investigation were found to depend on the shock wave front width. The methods described were used for the study of laser-produced plasma phenomena, occuring in the experiments on powerful nine-channel laser installation ''Kalmar''. (author)

  17. Type of precursor and synthesis of silicon oxycarbide (SiOxCyH) thin films with a surfatron microwave oxygen/argon plasma

    International Nuclear Information System (INIS)

    Walkiewicz-Pietrzykowska, Agnieszka; Espinos, J. P.; Gonzalez-Elipe, Agustin R.

    2006-01-01

    Siliconelike thin films (i.e., SiO x C y H z ) were prepared in a microwave plasma enhanced chemical vapor deposition reactor from structurally different organosilicon precursors [i.e., hexamethyldisiloxane (HMDSO), dimethylsilane (DMS), and tetramethylsilane (TMS)]. The films were deposited at room temperature by using different oxygen/argon ratios in the plasma gas. By changing the type of precursor and the relative concentration of oxygen in the plasma, thin films with different compositions (i.e., O/C ratio) and properties are obtained. In general, raising the oxygen concentration in the plasma produces the progressive removal of the organic moieties from the films whose composition and structure then approach those of silicon dioxide. The deposition rate was highly dependent on the type of precursor, following the order HMDSO>>DMS>TMS. The polarizabilities, optical band gaps, and surface free energy of the films also depended on the thin film composition and structure. It is proposed that the Si-O bonds existing in HMDSO is the main factor controlling the distinct reactivity of this precursor and is also responsible for the different compositions and properties of the SiO x C y H z thin films prepared with very low or no oxygen in the plasma gas

  18. Deposition of thin films and surface modification by pulsed high energy density plasma

    International Nuclear Information System (INIS)

    Yan Pengxun; Yang Size

    2002-01-01

    The use of pulsed high energy density plasma is a new low temperature plasma technology for material surface treatment and thin film deposition. The authors present detailed theoretical and experimental studies of the production mechanism and physical properties of the pulsed plasma. The basic physics of the pulsed plasma-material interaction has been investigated. Diagnostic measurements show that the pulsed plasma has a high electron temperature of 10-100 eV, density of 10 14 -10 16 cm -3 , translation velocity of ∼10 -7 cm/s and power density of ∼10 4 W/cm 2 . Its use in material surface treatment combines the effects of laser surface treatment, electron beam treatment, shock wave bombardment, ion implantation, sputtering deposition and chemical vapor deposition. The metastable phase and other kinds of compounds can be produced on low temperature substrates. For thin film deposition, a high deposition ratio and strong film to substrate adhesion can be achieved. The thin film deposition and material surface modification by the pulsed plasma and related physical mechanism have been investigated. Thin film c-BN, Ti(CN), TiN, DLC and AlN materials have been produced successfully on various substrates at room temperature. A wide interface layer exists between film and substrate, resulting in strong adhesion. Metal surface properties can be improved greatly by using this kind of treatment

  19. Associations of geomagnetic activity with plasma sheet thinning and expansion: A statistical study

    International Nuclear Information System (INIS)

    Hones, E.W. Jr.; Pytte, T.; West, H.I. Jr.

    1984-01-01

    Associations of geomagnetic activity in the auroral zone with thinnings and expansions of the magnetotail plasma sheet are examined statistically in this paper. We first identified many plasma sheet thinnings and expansions in plasma and particle data from VELA satellites and from OGO 5 without reference to the ground magnetic data. These events were grouped according to the location of the detecting satellite in the magnetotail. For each such group the times of thinning or expansion were then used as fiducial times in a superposed-epoch analysis of the geomagnetic AL index values that were recorded in 8-hour intervals centered on the event times. The results show that many plasma sheet thinnings and expansions are related to discrete negative bay structures that are the classical signature of substorms. Furthermore, they support earlier findings that plasma sheet thinning and expansion at the VELA orbit (rroughly-equal18 R/sub E/) tend to be associated with the onset of the auroral zone negative bay and the beginning of its subsidence, respectively. Earthward of rroughly-equal13-15 R/sub E/, plasma sheet expansion occurs near the time of the onset of the negative bay, again in agreement with earlier findings. A large fraction of plasma sheet expansions to half thicknesses of > or approx. =6 R/sub E/ at the VELA orbit are associated not with a baylike geomagnetic disturbance but with subsidence of a prolonged interval of disturbance. The study also shows that many plasma sheet expansions are related simply to generally enhanced geomagnetic activity showing no baylike or other distinctive features

  20. Moisture resistant and anti-reflection optical coatings produced by plasma polymerization of organic compounds

    Science.gov (United States)

    Hollahan, J. R.; Wydeven, T.

    1975-01-01

    The need for protective coatings on critical optical surfaces, such as halide crystal windows or lenses used in spectroscopy, has long been recognized. It has been demonstrated that thin, one micron, organic coatings produced by polymerization of flourinated monomers in low temperature gas discharge (plasma) exhibit very high degrees of moisture resistence, e.g., hundreds of hours protection for cesium iodide vs. minutes before degradation sets in for untreated surfaces. The index of refraction of these coatings is intermediate between that of the halide substrate and air, a condition for anti-reflection, another desirable property of optical coatings. Thus, the organic coatings not only offer protection, but improved transmittance as well. The polymer coating is non-absorbing over the range 0.4 to 40 microns with an exception at 8.0 microns, the expected absorption for C-F bonds.

  1. Development of optical thin film technology for lasers and synchrotron radiation

    International Nuclear Information System (INIS)

    Apparao, K.V.S.R.; Bagchi, T.C.; Sahoo, N.K.

    1985-01-01

    Dielectric multilayer optical thin film devices play an important role not only in the working of lasers but also in different front line research activities using high power lasers and high intensity synchrotron radiation sources. Facilities are set up recently in the Spectroscopy Division to develop the optical thin film design and fabrication technologies indigeneously. Using the facilities thin film devices for different laser applications working in the wavelength range from 300 nm to 1064 nm were developed. Different technical aspects involved in the technology development are briefly described. (author)

  2. Raman spectroscopy of optical properties in CdS thin films

    Directory of Open Access Journals (Sweden)

    Trajić J.

    2015-01-01

    Full Text Available Properties of CdS thin films were investigated applying atomic force microscopy (AFM and Raman spectroscopy. CdS thin films were prepared by using thermal evaporation technique under base pressure 2 x 10-5 torr. The quality of these films was investigated by AFM spectroscopy. We apply Raman scattering to investigate optical properties of CdS thin films, and reveal existence of surface optical phonon (SOP mode at 297 cm-1. Effective permittivity of mixture were modeled by Maxwell - Garnet approximation. [Projekat Ministarstva nauke Republike Srbije, br. 45003

  3. Experimental studies of thorium ion implantation from pulse laser plasma into thin silicon oxide layers

    Science.gov (United States)

    Borisyuk, P. V.; Chubunova, E. V.; Lebedinskii, Yu Yu; Tkalya, E. V.; Vasilyev, O. S.; Yakovlev, V. P.; Strugovshchikov, E.; Mamedov, D.; Pishtshev, A.; Karazhanov, S. Zh

    2018-05-01

    We report the results of experimental studies related to implantation of thorium ions into thin silicon dioxide by pulsed plasma flux expansion. Thorium ions were generated by laser ablation from a metal target, and the ionic component of the laser plasma was accelerated in an electric field created by the potential difference (5, 10 and 15 kV) between the ablated target and a SiO2/Si (0 0 1) sample. The laser ablation system installed inside the vacuum chamber of the electron spectrometer was equipped with a YAG:Nd3  +  laser having a pulse energy of 100 mJ and time duration of 15 ns in the Q-switched regime. The depth profile of thorium atoms implanted into the 10 nm thick subsurface areas together with their chemical state as well as the band gap of the modified silicon oxide at different conditions of implantation processes were studied by means of x-ray photoelectron spectroscopy and reflected electron energy loss spectroscopy methods. Analysis of the chemical composition showed that the modified silicon oxide film contains complex thorium silicates. Depending on the local concentration of thorium atoms, the experimentally established band gaps were located in the range 6.0–9.0 eV. Theoretical studies of the optical properties of the SiO2 and ThO2 crystalline systems were performed by ab initio calculations within hybrid functional. The optical properties of the SiO2/ThO2 composite were interpreted on the basis of the Bruggeman effective medium approximation. A quantitative assessment of the yield of isomeric nuclei in ‘hot’ laser plasma at the early stages of expansion was performed. The estimates made with experimental results demonstrated that the laser implantation of thorium ions into the SiO2 matrix can be useful for further research of low-lying isomeric transitions in a 229Th isotope with energy of 7.8 +/- 0.5 eV.

  4. Interleukin-7 Plasma Levels in Human Differentiate Anorexia Nervosa, Constitutional Thinness and Healthy Obesity.

    Science.gov (United States)

    Germain, Natacha; Viltart, Odile; Loyens, Anne; Bruchet, Céline; Nadin, Katia; Wolowczuk, Isabelle; Estour, Bruno; Galusca, Bogdan

    2016-01-01

    Interleukin-7 (IL-7) is a cytokine involved in energy homeostasis as demonstrated in rodents. Anorexia nervosa is characterized by restrained eating behavior despite adaptive orexigenic regulation profile including high ghrelin plasma levels. Constitutional thinness is a physiological condition of resistance to weight gain with physiological anorexigenic profile including high Peptide YY plasma level. Healthy obesity can be considered as a physiological state of resistance to weight loss with opposite appetite regulating profile to constitutional thinness including low Peptide YY plasma level. No studies in IL-7 are yet available in those populations. Therefore we evaluated circadian plasma levels of IL-7 in anorexia nervosa compared to constitutional thinness, healthy obese and control females. 10 restrictive-type anorexia nervosa women, 5 bingeing/purging anorexia nervosa woman, 5 recovered restrictive anorexia nervosa women, 4 bulimic females, 10 constitutional thinness women, 7 healthy obese females, and 10 normal weight women controls were enrolled in this cross-sectional study, performed in endocrinology unit and academic laboratory. Twelve-point circadian profiles of plasma IL-7 levels were measured in each subject. 24h mean IL-7 plasma levels (pg/ml, mean±SEM) were decreased in restrictive-type anorexia nervosa (123.4±14.4, panorexia nervosa (24.2±5.6, panorexia nervosa (64.2±16.1, p = 0.01) and healthy obese patients (51±3.2, panorexia nervosa, confirming its difference with constitutional thinness. Healthy obesity, with low IL-7, is once again in mirror image of constitutional thinness with normal high IL-7.

  5. Cathode and ion-luminescence of Eu:ZnO thin films prepared by reactive magnetron sputtering and plasma decomposition of non-volatile precursors

    Energy Technology Data Exchange (ETDEWEB)

    Gil-Rostra, Jorge [Instituto de Ciencia de Materiales de Sevilla, CSIC, Univ. Sevilla, C/Américo Vespucio 49, E-41092 Sevilla (Spain); Ferrer, Francisco J. [Centro Nacional de Aceleradores, CSIC, Univ. Sevilla, Av. Thomas A. Edison 7, E-41092 Sevilla (Spain); Martín, Inocencio R. [Departamento de Física Fundamental y Experimental, Electrónica y Sistemas, U. La Laguna, C/Astrofísico Francisco Sánchez s/n, E-38206 La Laguna, Santa Cruz de Tenerife (Spain); González-Elipe, Agustín R.; Yubero, Francisco [Instituto de Ciencia de Materiales de Sevilla, CSIC, Univ. Sevilla, C/Américo Vespucio 49, E-41092 Sevilla (Spain)

    2016-10-15

    This paper reports the luminescent behavior of Eu:ZnO thin films prepared by an one-step procedure that combines reactive magnetron sputtering deposition of ZnO with the plasma activated decomposition of a non-volatile acetylacetonate precursor of Eu sublimated in an effusion cell. Chemical composition and microstructure of the Eu:ZnO thin films have been characterized by several methods and their photo-, cathode- and ion-luminescent properties studied as a function of Eu concentration. The high transparency and well controlled optical properties of the films have demonstrated to be ideal for the development of cathode- and ion- luminescence sensors.

  6. Synthesis of electro-active manganese oxide thin films by plasma enhanced chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Merritt, Anna R. [Energetics Research Division, Naval Air Warfare Center Weapons Division, China Lake, CA 93555 (United States); Rajagopalan, Ramakrishnan [Department of Engineering, The Pennsylvania State University, Dubois, PA 15801 (United States); Materials Research Institute, The Pennsylvania State University, University Park, PA 16802 (United States); Carter, Joshua D. [Energetics Research Division, Naval Air Warfare Center Weapons Division, China Lake, CA 93555 (United States)

    2014-04-01

    The good stability, cyclability and high specific capacitance of manganese oxide (MnO{sub x}) has recently promoted a growing interest in utilizing MnO{sub x} in asymmetric supercapacitor electrodes. Several literature reports have indicated that thin film geometries of MnO{sub x} provide specific capacitances that are much higher than bulk MnO{sub x} powders. Plasma enhanced chemical vapor deposition (PECVD) is a versatile technique for the production of metal oxide thin films with high purity and controllable thickness. In this work, MnO{sub x} thin films deposited by PECVD from a methylcyclopentadienyl manganese tricarbonyl precursor are presented and the effect of processing conditions on the quality of MnO{sub x} films is described. The film purity and oxidation state of the MnO{sub x} films were studied by Fourier transform infrared spectroscopy and X-ray photoelectron spectroscopy. Preliminary electrochemical testing of MnO{sub x} films deposited on carbon fiber electrodes in aqueous electrolytes indicates that the PECVD synthesized films are electrochemically active. - Highlights: • Plasma enhanced chemical vapor deposition of manganese oxide thin films. • Higher plasma power and chamber pressure increase deposition rate. • Manganese oxide thin films are electrochemically active. • Best electrochemical performance observed for pure film with low stress • Lower capacitance observed at higher scan rates despite thin film geometry.

  7. Modification of the Properties of Vanadium Oxide Thin Films by Plasma-Immersion Ion Implantation

    Directory of Open Access Journals (Sweden)

    Sergey Burdyukh

    2018-01-01

    Full Text Available The paper describes the effect of doping with hydrogen and tungsten by means of plasma-immersion ion implantation (PIII on the properties of vanadium dioxide and hydrated vanadium pentoxide films. It is shown that the parameters of the metal-insulator phase transition in VO2 thin films depend on the hydrogen implantation dose. Next, we explore the effect of PIII on composition, optical properties, and the internal electrochromic effect (IECE in V2O5·nH2O films. The variations in the composition and structure caused by the hydrogen insertion, as well as those caused by the electrochromic effect, are studied by nuclear magnetic resonance, thermogravimetry, Raman spectroscopy, and X-ray structural analysis. It is shown that the ion implantation-induced hydrogenation can substantially enhance the manifestation and performance of the IECE in V2O5 xerogel films. Finally, the effect of PIII-assisted doping with W on the parameters of electrical switching in Au/V2O5·nH2O/Au sandwich structures is examined. It is shown that implanting small tungsten doses improves the switching parameters after forming. When implanting large doses, switching is observed without electroforming, and if electroforming is applied, the switching effect, on the contrary, disappears.

  8. Effect of surface microstructure and wettability on plasma protein adsorption to ZnO thin films prepared at different RF powers

    Energy Technology Data Exchange (ETDEWEB)

    Huang Zhanyun; Chen Min; Chen Dihu [State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-Sen University, Guangzhou 510275 (China); Pan Shirong, E-mail: stscdh@mail.sysu.edu.c [Artificial Heart Lab, the 1st Affiliate Hospital of Sun Yat-Sen University, Guangzhou 510080 (China)

    2010-10-01

    In this paper, the adsorption behavior of plasma proteins on the surface of ZnO thin films prepared by radio frequency (RF) sputtering under different sputtering powers was studied. The microstructures and surface properties of the ZnO thin films were investigated by x-ray diffraction (XRD), scanning electron microscopy (SEM), UV-visible optical absorption spectroscopy and contact angle techniques. The results show that the ZnO thin films have better orientation of the (0 0 2) peak with increasing RF power, especially at around 160 W, and the optical band gap of the ZnO films varies from 3.2 to 3.4 eV. The contact angle test carried out by the sessile drop technique denoted a hydrophobic surface of the ZnO films, and the surface energy and adhesive work of the ZnO thin films decreased with increasing sputtering power. The amounts of human fibrinogen (HFG) and human serum albumin (HSA) adsorbing on the ZnO films and reference samples were determined by using enzyme-linked immunosorbent assay (ELISA). The results show that fewer plasma proteins and a smaller HFG/HSA ratio adsorb on the ZnO thin films' surface.

  9. Structural and optical properties of ITO and Cu doped ITO thin films

    Science.gov (United States)

    Chakraborty, Deepannita; Kaleemulla, S.; Rao, N. Madhusudhana; Subbaravamma, K.; Rao, G. Venugopal

    2018-04-01

    (In0.95Sn0.05)2O3 and (In0.90Cu0.05Sn0.05)2O3 thin films were coated onto glass substrate by electron beam evaporation technique. The structural and optical properties of ITO and Cu doped ITO thin films have been studied by X-ray diffractometer (XRD) and UV-Vis-NIR spectrophotometer. The crystallite size obtained for ITO and Cu doped ITO thin films was in the range of 24 nm to 22 nm. The optical band gap of 4 eV for ITO thin film sample has been observed. The optical band gap decreases to 3.85 eV by doping Cu in ITO.

  10. Chemically deposited Sb2S3 thin films for optical recording

    International Nuclear Information System (INIS)

    Shaji, S; Arato, A; Castillo, G Alan; Palma, M I Mendivil; Roy, T K Das; Krishnan, B; O'Brien, J J; Liu, J

    2010-01-01

    Laser induced changes in the properties of Sb 2 S 3 thin films prepared by chemical bath deposition are described in this paper. Sb 2 S 3 thin films of thickness 550 nm were deposited from a solution containing SbCl 3 and Na 2 S 2 O 3 at 27 0 C for 5 h. These thin films were irradiated by a 532 nm continuous wave laser beam under different conditions at ambient atmosphere. X-ray diffraction analysis showed amorphous to polycrystalline transformation due to laser exposure of these thin films. Morphology and composition of these films were described. Optical properties of these films before and after laser irradiation were analysed. The optical band gap of the material was decreased due to laser induced crystallization. The results obtained confirm that there is further scope for developing this material as an optical recording media.

  11. Chemically deposited Sb{sub 2}S{sub 3} thin films for optical recording

    Energy Technology Data Exchange (ETDEWEB)

    Shaji, S; Arato, A; Castillo, G Alan; Palma, M I Mendivil; Roy, T K Das; Krishnan, B [Facultad de IngenierIa Mecanica y Electrica, Universidad Autonoma de Nuevo Leon, San Nicolas de los Garza, Nuevo Leon, C.P- 66450 (Mexico); O' Brien, J J; Liu, J, E-mail: bkrishnan@fime.uanl.m [Center for Nanoscience and Department of Chemistry and Biochemistry, University of Missouri-St. Louis, One Univ. Blvd., St. Louis, MO - 63121 (United States)

    2010-02-24

    Laser induced changes in the properties of Sb{sub 2}S{sub 3} thin films prepared by chemical bath deposition are described in this paper. Sb{sub 2}S{sub 3} thin films of thickness 550 nm were deposited from a solution containing SbCl{sub 3} and Na{sub 2}S{sub 2}O{sub 3} at 27 {sup 0}C for 5 h. These thin films were irradiated by a 532 nm continuous wave laser beam under different conditions at ambient atmosphere. X-ray diffraction analysis showed amorphous to polycrystalline transformation due to laser exposure of these thin films. Morphology and composition of these films were described. Optical properties of these films before and after laser irradiation were analysed. The optical band gap of the material was decreased due to laser induced crystallization. The results obtained confirm that there is further scope for developing this material as an optical recording media.

  12. Gold and silver thin film analysis by optical and neutron activation techniques

    International Nuclear Information System (INIS)

    Moharram, B.M.; El-Khatib, A.M.; Ammar, E.A.

    1989-01-01

    Thicknesses of gold and silver thin films have been determined by NAA technique. Reasonable agreement with conventional optical methods has been obtained, but the lower detection limit in the case of NAA is far better than in the optical method. (author)

  13. Structural, microstructural and optical properties of Cu2ZnSnS4 thin ...

    Indian Academy of Sciences (India)

    2017-08-05

    Aug 5, 2017 ... From optical absorption studies, the direct optical band gap of CZTS films is found to be ∼1.45 eV. ... CZTS thin films; thermal evaporation; annealing; Raman spectroscopy; .... determination of composition data is ±5 at%.

  14. Summary of the recent conference on thin-film neutron optical devices

    International Nuclear Information System (INIS)

    Majkrzak, C.F.

    1989-01-01

    The proceedings of the conference of the International Society for Optical Engineering on Thin-Film Neutron Optical Devices: Mirrors, Supermirrors, Multilayer Monochromators, Polarizers and Beam Guides, which was held in San Diego, California in August, 1988, are summarized here. 2 refs

  15. Study of optical emission spectroscopy with inductively coupled plasma torch

    International Nuclear Information System (INIS)

    Bauer, M.

    1982-01-01

    Inductively coupled plasma optical emission spectroscopy is an excellent tool for quantitative multielement trace analysis. This paper describes the performance of a computer-controlled sequential measurement system. Chemical and ionization interferences are shown to be negligible due to the characteristics of the inductively coupled plasma, spectral interferences are eliminated by using a high-resolution monochromator and computer data handling. Good accuracy is achieved for most of the interesting elements, as is shown from both an interlaboratory test and from comparison of the results of water samples from the rivers Elbe and Weser with those achieved with neutron activation and X-ray fluorescence analysis. (orig.) [de

  16. UV and plasma treatment of thin silver layers and glass surfaces

    Energy Technology Data Exchange (ETDEWEB)

    Hluschi, J.H. [University of Applied Sciences and Arts, Von-Ossietzky-Str. 99, D-37085 Goettingen (Germany); Helmke, A. [University of Applied Sciences and Arts, Von-Ossietzky-Str. 99, D-37085 Goettingen (Germany); Roth, P. [University of Applied Sciences and Arts, Von-Ossietzky-Str. 99, D-37085 Goettingen (Germany); Boewer, R. [Interpane Glasbeschichtungsgesellschaft mbH and Co KG, Sohnreystr. 21, D-37697 Lauenfoerde (Germany); Herlitze, L. [Interpane Glasbeschichtungsgesellschaft mbH and Co KG, Sohnreystr. 21, D-37697 Lauenfoerde (Germany); Vioel, W. [University of Applied Sciences and Arts, Von-Ossietzky-Str. 99, D-37085 Goettingen (Germany)]. E-mail: vioel@hawk-hhg.de

    2006-11-10

    Thin silver layers can be modified by treatment with UV radiation or a plasma discharge. UV treatment at a wavelength of {lambda}=308 -bar nm improves the layer properties, thus leading to an enhancement of the layers IR reflectivity. For the purpose of in situ-measurement the sheet resistance is recorded during the process. Due to the Hagen-Rubens-Relation [E. Hagen, H. Rubens, Ann. Phys. 11 (1903) 873]-bar the sheet resistance is linked to the IR reflectivity of thin metal-films. A pretreatment of uncoated glass using a dielectric barrier discharge activates and cleans its surface, thus leading to an increase in adhesion of thin layers.

  17. UV and plasma treatment of thin silver layers and glass surfaces

    International Nuclear Information System (INIS)

    Hluschi, J.H.; Helmke, A.; Roth, P.; Boewer, R.; Herlitze, L.; Vioel, W.

    2006-01-01

    Thin silver layers can be modified by treatment with UV radiation or a plasma discharge. UV treatment at a wavelength of λ=308 -bar nm improves the layer properties, thus leading to an enhancement of the layers IR reflectivity. For the purpose of in situ-measurement the sheet resistance is recorded during the process. Due to the Hagen-Rubens-Relation [E. Hagen, H. Rubens, Ann. Phys. 11 (1903) 873]-bar the sheet resistance is linked to the IR reflectivity of thin metal-films. A pretreatment of uncoated glass using a dielectric barrier discharge activates and cleans its surface, thus leading to an increase in adhesion of thin layers

  18. Optical emission spectra of a copper plasma produced by a metal vapour vacuum arc plasma source

    International Nuclear Information System (INIS)

    Yotsombat, B.; Poolcharuansin, P.; Vilaithong, T.; Davydov, S.; Brown, I.G.

    2001-01-01

    Optical emission spectroscopy in the range 200-800 nm was applied for investigation of the copper plasma produced by a metal vapour vacuum arc plasma source. The experiments were conducted for the cases when the plasma was guided by straight and Ω-shaped curved solenoids as well as without solenoids, and also for different vacuum conditions. It was found that, besides singly- and doubly-charged ions, a relatively high concentration of excited neutral copper atoms was present in the plasma. The relative fraction of excited atoms was much higher in the region close to the cathode surface than in the plasma column inside the solenoid. The concentration of excited neutral, singly- and doubly-ionized atoms increased proportionally when the arc current was increased to 400 A. Some weak lines were attributed to more highly ionized copper species and impurities in the cathode material. (author)

  19. Relationships among surface processing at the nanometer scale, nanostructure and optical properties of thin oxide films

    Energy Technology Data Exchange (ETDEWEB)

    Losurdo, Maria

    2004-05-01

    Spectroscopic ellipsometry is used to study the optical properties of nanostructured semiconductor oxide thin films. Various examples of models for the dielectric function, based on Lorentzian oscillators combined with the Drude model, are given based on the band structure of the analyzed oxide. With this approach, the optical properties of thin films are determined independent of the dielectric functions of the corresponding bulk materials, and correlation between the optical properties and nanostructure of thin films is investigated. In particular, in order to discuss the dependence of optical constants on grain size, CeO{sub 2} nanostructured films are considered and parameterized by two-Lorentzian oscillators or two-Tauc-Lorentz model depending on the nanostructure and oxygen deficiency. The correlation among anisotropy, crystalline fraction and optical properties parameterized by a four-Lorentz oscillator model is discussed for nanocrystalline V{sub 2}O{sub 5} thin films. Indium tin oxide thin films are discussed as an example of the presence of graded optical properties related to interfacial reactivity activated by processing conditions. Finally, the example of ZnO shows the potential of ellipsometry in discerning crystal and epitaxial film polarity through the analysis of spectra and the detection of surface reactivity of the two polar faces, i.e. Zn-polarity and O-polarity.

  20. Electron-Beam Produced Air Plasma: Optical and Electrical Diagnostics

    Science.gov (United States)

    Vidmar, Robert; Stalder, Kenneth; Seeley, Megan

    2006-10-01

    High energy electron impact excitation is used to stimulate optical emissions that quantify the measurement of electron beam current. A 100 keV 10-ma electron beam source is used to produce air plasma in a test cell at a pressure between 1 mTorr and 760 Torr. Optical emissions originating from the N2 2^nd positive line at 337.1 nm and the N2^+ 1^st negative line at 391.4 nm are observed. Details on calibration using signals from an isolated transmission window and a Faraday plate are discussed. Results using this technique and other electrical signal are presented.

  1. Structural, morphological and optical properties of thermal annealed TiO thin films

    International Nuclear Information System (INIS)

    Zribi, M.; Kanzari, M.; Rezig, B.

    2008-01-01

    Structural, morphological and optical properties of TiO thin films grown by single source thermal evaporation method were studied. The films were annealed from 300 to 520 deg. C in air after evaporation. Qualitative film analysis was performed with X-ray diffraction, atomic force microscopy and optical transmittance and reflectance spectra. A correlation was established between the optical properties, surface roughness and growth morphology of the evaporated TiO thin films. The X-ray diffraction spectra indicated the presence of the TiO 2 phase for the annealing temperature above 400 deg. C

  2. Influence of sputtering power on the optical properties of ITO thin films

    Energy Technology Data Exchange (ETDEWEB)

    K, Aijo John; M, Deepak, E-mail: manju.thankamoni@gmail.com; T, Manju, E-mail: manju.thankamoni@gmail.com [Department of Physics, Sree Sankara College, Kalady P. O., Ernakulam Dist., Kerala (India); Kumar, Vineetha V. [Dept. of Physics, K. E. College, Mannanam, Kottayam Dist., Kerala (India)

    2014-10-15

    Tin doped indium oxide films are widely used in transparent conducting coatings such as flat panel displays, crystal displays and in optical devices such as solar cells and organic light emitting diodes due to the high electrical resistivity and optical transparency in the visible region of solar spectrum. The deposition parameters have a commendable influence on the optical and electrical properties of the thin films. In this study, ITO thin films were prepared by RF magnetron sputtering. The properties of the films prepared under varying sputtering power were compared using UV- visible spectrophotometry. Effect of sputtering power on the energy band gap, absorption coefficient and refractive index are investigated.

  3. Spectroscopic ellipsometry investigations of optical anisotropy in obliquely deposited hafnia thin films

    Energy Technology Data Exchange (ETDEWEB)

    Tokas, R. B., E-mail: tokasstar@gmail.com; Jena, Shuvendu; Thakur, S.; Sahoo, N. K. [Atomic & Molecular Physics Division, Bhabha Atomic Research Centre, Trombay, Mumbai-85 (India); Haque, S. Maidul; Rao, K. Divakar [Photonics & Nanotechnology Section, Atomic & Molecular Physics Division, Bhabha Atomic Research Centre facility, Visakhapatnam-530012 (India)

    2016-05-23

    In present work, HfO{sub 2} thin films have been deposited at various oblique incidences on Si substrates by electron beam evaporation. These refractory oxide films exhibited anisotropy in refractive index predictably due to special columnar microstructure. Spectroscopic ellipsometry being a powerful tool for optical characterization has been employed to investigate optical anisotropy. It was observed that the film deposited at glancing angle (80°) exhibits the highest optical anisotropy. Further, anisotropy was noticed to decrease with lower values of deposition angles while effective refractive index depicts opposite trend. Variation in refractive index and anisotropy has been explained in light of atomic shadowing during growth of thin films at oblique angles.

  4. Optical properties of CeO2 thin films

    Indian Academy of Sciences (India)

    TECS

    Keywords. Transmittance; absorption coefficient; refractive index; optical band gap. 1. Introduction ... Several studies were reported on the optical and elec- trochemical ... In order to determine the values of optical band gap,. (αhν) r vs hν curve ...

  5. Optical coupling between atomically thin black phosphorus and a two dimensional photonic crystal nanocavity

    Science.gov (United States)

    Ota, Yasutomo; Moriya, Rai; Yabuki, Naoto; Arai, Miho; Kakuda, Masahiro; Iwamoto, Satoshi; Machida, Tomoki; Arakawa, Yasuhiko

    2017-05-01

    Atomically thin black phosphorus (BP) is an emerging two dimensional (2D) material exhibiting bright photoluminescence in the near infrared region. Coupling its radiation to photonic nanostructures will be an important step toward the realization of 2D material based nanophotonic devices that operate efficiently in the near infrared region, which includes the technologically important optical telecommunication wavelength bands. In this letter, we demonstrate the optical coupling between atomically thin BP and a 2D photonic crystal nanocavity. We employed a home-build dry transfer apparatus for placing a thin BP flake on the surface of the nanocavity. Their optical coupling was analyzed through measuring cavity mode emission under optical carrier injection at room temperature.

  6. Enhanced Visible Transmittance of Thermochromic VO2 Thin Films by SiO2 Passivation Layer and Their Optical Characterization

    Directory of Open Access Journals (Sweden)

    Jung-Hoon Yu

    2016-07-01

    Full Text Available This paper presents the preparation of high-quality vanadium dioxide (VO2 thermochromic thin films with enhanced visible transmittance (Tvis via radio frequency (RF sputtering and plasma enhanced chemical vapor deposition (PECVD. VO2 thin films with high Tvis and excellent optical switching efficiency (Eos were successfully prepared by employing SiO2 as a passivation layer. After SiO2 deposition, the roughness of the films was decreased 2-fold and a denser structure was formed. These morphological changes corresponded to the results of optical characterization including the haze, reflectance and absorption spectra. In spite of SiO2 coating, the phase transition temperature (Tc of the prepared films was not affected. Compared with pristine VO2, the total layer thickness after SiO2 coating was 160 nm, which is an increase of 80 nm. Despite the thickness change, the VO2 thin films showed a higher Tvis value (λ 650 nm, 58% compared with the pristine samples (λ 650 nm, 43%. This enhancement of Tvis while maintaining high Eos is meaningful for VO2-based smart window applications.

  7. Optical characteristics of the thin-film scintillator detector

    International Nuclear Information System (INIS)

    Muga, L.; Burnsed, D.

    1976-01-01

    A study of the thin-film detector (TFD) was made in which various light guide and scintillator film support configurations were tested for efficiency of light coupling. Masking of selected portions of the photomultiplier (PM) tube face revealed the extent to which emitted light was received at the exposed PM surfaces. By blocking off selected areas of the scintillator film surface from direct view of the PM tube faces, a measure of the light-guiding efficiency of the film and its support could be estimated. The picture that emerges is that, as the light which is initially trapped in the thin film spreads radially outward from the ion entrance/exit point, it is scattered out of the film by minute imperfections. Optimum signals were obtained by a configuration in which the thin scintillator film was supported on a thin rectangular Celluloid frame inserted within a highly polished metal cylindrical sleeve

  8. Contribution of electro-optics to plasma research

    International Nuclear Information System (INIS)

    Dillet, A.; Jacquot, C.; Stevenin, P.

    1967-01-01

    Two electro-optical devices useful for plasma diagnostic are described. The first includes two image converters and is able to record any luminous transient phenomenon (for instance, fast spectrography) with a photon gain sufficient to distinguish the physically observable luminous thresholds. The second makes use of the Faraday effect to measure magnetic fields without perturbation. A fast device has a pass band up to 30 MHz. A slower one can detect the '' of arc. (authors) [fr

  9. Preparation and optical characterization of DNA-riboflavin thin films

    Science.gov (United States)

    Paulson, Bjorn; Shin, Inchul; Kong, Byungjoo; Sauer, Gregor; Dugasani, Sreekantha Reddy; Khazaeinezhad, Reza; Jung, Woohyun; Joo, Boram; Oh, Kyunghwan

    2016-09-01

    Thin films of DNA biopolymer thin film are fabricated by a drop casting process on glass and silicon substrates, as well as freestanding. The refractive index is measured by elliposmetry and in bulk DNA film the refractive index is shown to be increased in the 600 to 900 nm DNA transparency window by doping with riboflavin. Further analysis with FT-IR, Raman, and XRD are used to determine whether binding between riboflavin and DNA occurs.

  10. Optical characterizations of silver nanoprisms embedded in polymer thin film layers

    Science.gov (United States)

    Carlberg, Miriam; Pourcin, Florent; Margeat, Olivier; Le Rouzo, Judikael; Berginc, Gerard; Sauvage, Rose-Marie; Ackermann, Jorg; Escoubas, Ludovic

    2017-10-01

    The precise control of light-matter interaction has a wide range of applications and is currently driven by the use of nanoparticles (NPs) by the recent advances in nanotechnology. Taking advantage of the material, size, shape, and surrounding media dependence of the optical properties of plasmonic NPs, thin film layers with tunable optical properties are achieved. The NPs are synthesized by wet chemistry and embedded in a polyvinylpyrrolidone (PVP) polymer thin film layer. Spectrophotometer and spectroscopic ellipsometry measurements are coupled to finite-difference time domain numerical modeling to optically characterize the heterogeneous thin film layers. Silver nanoprisms of 10 to 50 nm edge size exhibit high absorption through the visible wavelength range. A simple optical model composed of a Cauchy law and a Lorentz law, accounting for the optical properties of the nonabsorbing polymer and the absorbing property of the nanoprisms, fits the spectroscopic ellipsometry measurements. Knowing the complex optical indices of heterogeneous thin film layers let us design layers of any optical properties.

  11. Optical spectroscopy, optical conductivity, dielectric properties and new methods for determining the gap states of CuSe thin films

    International Nuclear Information System (INIS)

    Sakr, G.B.; Yahia, I.S.; Fadel, M.; Fouad, S.S.; Romcevic, N.

    2010-01-01

    Research highlights: → The structural, optical dispersion parameters and the Raman spectroscopy have been studied for CuSe thin films. → X-ray diffraction results indicate the amorphous nature of the thermally evaporated CuSe thin films. → The refractive index shows an anomalous dispersion at the lower wavelength (absorption region) and a normal dispersion at the higher wavelengths (transparent region). → The refractive index dispersion obeys the single oscillator model proposed by Wemple and DiDomenico WDD model and the single oscillator parameters were determined. → The band gap of CuSe thin films was determined by three novel methods i.e. (relaxation time, real and imaginary dielectric constant and real and imaginary optical conductivity) which in a good agreement with the Tauc band gap value. - Abstract: The paper describes the structural and optical properties of CuSe thin films. X-ray diffraction pattern indicates that CuSe thin film has an amorphous structure. Transmittance T(λ) and reflectance R(λ) measurements in the wavelength range (300-1700 nm) were used to calculate the refractive index n(λ), the absorption index and the optical dispersion parameters according to Wemple and Didomenico WDD model. The dispersion curve of the refractive index shows an anomalous dispersion in the absorption region and a normal dispersion in the transparent region. The optical bandgap has been estimated and confirmed by four different methods. The value for the direct bandgap for the as-deposited CuSe thin film approximately equals 2.7 eV. The Raman spectroscopy was used to identify and quantify the individual phases presented in the CuSe films.

  12. Theoretical investigation of electronic, magnetic and optical properties of Fe doped GaN thin films

    International Nuclear Information System (INIS)

    Salmani, E.; Mounkachi, O.; Ez-Zahraouy, H.; Benyoussef, A.; Hamedoun, M.; Hlil, E.K.

    2013-01-01

    Highlights: •Magnetic and optical properties Fe-doped GaN thin films are studied using DFT. •The band gaps of GaN thin films are larger than the one of the bulk. •The layer thickness and acceptor defect can switch the magnetic ordering. -- Abstract: Using first principles calculations based on spin-polarized density functional theory, the magnetic and optical properties of GaN and Fe-doped GaN thin films with and without acceptor defect is studied. The band structure calculations show that the band gaps of GaN thin films with 2, 4 and 6 layers are larger than the one of the bulk with wurtzite structure and decreases with increasing the film thickness. In Fe doped GaN thin films, we show that layer of thickness and acceptor defect can switch the magnetic ordering from disorder local moment (DLM) to ferromagnetic (FM) order. Without acceptor defect Fe doped GaN exhibits spin glass phase in 4 layers form and ferromagnetic state for 2 layers form of the thin films, while it exhibits ferromagnetic phase with acceptor defect such as vacancies defect for 2 and 4 layers. In the FM ordering, the thin films is half-metallic and is therefore ideal for spin application. The different energy between ferromagnetic state and disorder local moment state was evaluated. Moreover, the optical absorption spectra obtained by ab initio calculations confirm the ferromagnetic stability based on the charge state of magnetic impurities

  13. Fabrication of Au/graphene oxide/Ag sandwich structure thin film and its tunable energetics and tailorable optical properties

    OpenAIRE

    Ruijin Hong; Jialin Ji; Chunxian Tao; Daohua Zhang; Dawei Zhang

    2017-01-01

    Au/graphene oxide/Ag sandwich structure thin film was fabricated. The effects of graphene oxide (GO) and bimetal on the structure and optical properties of metal silver films were investigated by X-ray diffraction (XRD), optical absorption, and Raman intensity measurements, respectively. Compared to silver thin film, Au/graphene oxide/Ag sandwich structure composite thin films were observed with wider optical absorption peak and enhanced absorption intensity. The Raman signal for Rhodamine B ...

  14. Plasma-Oxygen Interaction During Thin Films Deposition by Laser ...

    African Journals Online (AJOL)

    In this contribution we study the effect of the oxygen pressure on the plasma dynamics during the ablation of oxides materials into an oxygen gas. The study was done using fast imaging and ion probe techniques. Both techniques revealed that a threshold oxygen pressure is needed to initiate the plume oxygen interaction.

  15. Thickness and microstructure effects in the optical and electrical properties of silver thin films

    Directory of Open Access Journals (Sweden)

    Guowen Ding

    2015-11-01

    Full Text Available The optical and electrical response of metal thin films approaching thicknesses in the range of the electron mean free path is highly affected by electronic scattering with the interfaces and defects. Here, we present a theoretical and experimental study on how thickness and microstructure affect the properties of Ag thin films. We are able to successfully model the electrical resistivity and IR optical response using a thickness dependent electronic scattering time. Remarkably, the product of electronic scattering time and resistivity remains constant regardless of the thickness (τx ρ = C, with a value of 59 ± 2 μΩ cm ⋅ fs for Ag films in the investigated range from 3 to 74 nm. Our findings enable us to develop a theoretically framework that allows calculating the optical response of metal thin films in the IR by using their measured thickness and resistivity. An excellent agreement is found between experimental measurements and predicted values. This study also shows the theoretical lower limit for emissivity in Ag thin films according to their microstructure and thickness. Application of the model presented here will allow rapid characterization of the IR optical response of metal thin films, with important application in a broad spectrum of fundamental and industrial applications, including optical coatings, low-emissivity windows and semiconductor industry.

  16. Thickness and microstructure effects in the optical and electrical properties of silver thin films

    Energy Technology Data Exchange (ETDEWEB)

    Ding, Guowen, E-mail: gding@intermolecular.com; Clavero, César; Schweigert, Daniel; Le, Minh [Intermolecular, Inc., 3011 North First Street, San Jose, CA 95134 (United States)

    2015-11-15

    The optical and electrical response of metal thin films approaching thicknesses in the range of the electron mean free path is highly affected by electronic scattering with the interfaces and defects. Here, we present a theoretical and experimental study on how thickness and microstructure affect the properties of Ag thin films. We are able to successfully model the electrical resistivity and IR optical response using a thickness dependent electronic scattering time. Remarkably, the product of electronic scattering time and resistivity remains constant regardless of the thickness (τx ρ = C), with a value of 59 ± 2 μΩ cm ⋅ fs for Ag films in the investigated range from 3 to 74 nm. Our findings enable us to develop a theoretically framework that allows calculating the optical response of metal thin films in the IR by using their measured thickness and resistivity. An excellent agreement is found between experimental measurements and predicted values. This study also shows the theoretical lower limit for emissivity in Ag thin films according to their microstructure and thickness. Application of the model presented here will allow rapid characterization of the IR optical response of metal thin films, with important application in a broad spectrum of fundamental and industrial applications, including optical coatings, low-emissivity windows and semiconductor industry.

  17. Structural and optical investigations of sol–gel derived lithium titanate thin films

    International Nuclear Information System (INIS)

    Łapiński, M.; Kościelska, B.; Sadowski, W.

    2012-01-01

    Highlights: ► Lithium titanate thin films were deposited on glass substrates by sol–gel method. ► After annealing at 550 °C samples had lithium titanate spinel structure. ► Above 80 h of annealing mixture of lithium titanate and titanium oxides was appeared. ► Optical transmittance decreased with increasing of annealing time. - Abstract: In this paper structural and optical studies of lithium titanate (LTO) thin films are presented. Nanocrystalline thin films with 800 nm thickness were prepared by sol–gel method. To examine the influence of the annealing time on as-prepared films crystallization, the coatings were heated at 550 °C for 10, 20 and 80 h. Structure of manufactured thin films was investigated using X-ray diffraction (XRD). The most visible lithium titanate phase was obtained after 20 h annealing. Increasing of annealing time over 20 h revealed appearance of titanium oxides phase. On the basis of transmission characteristic optical properties were calculated. It was found that transmission through the thin films was reduced and position of the fundamental absorption edge was shifted toward a longer wavelength with increasing of annealing time. The optical band gap was calculated for direct allowed and indirect allowed transitions from optical absorption spectra.

  18. Method of preparing water purification membranes. [polymerization of allyl amine as thin films in plasma discharge

    Science.gov (United States)

    Hollahan, J. R.; Wydeven, T. J., Jr. (Inventor)

    1974-01-01

    Allyl amine and chemically related compounds are polymerized as thin films in the presence of a plasma discharge. The monomer compound can be polymerized by itself or in the presence of an additive gas to promote polymerization and act as a carrier. The polymerized films thus produced show outstanding advantages when used as reverse osmosis membranes.

  19. Modification of optical and electrical properties of chemical bath deposited SnS using O{sub 2} plasma treatments

    Energy Technology Data Exchange (ETDEWEB)

    Gómez, A. [Facultad de Ciencias, Universidad Autónoma del Estado de México, Estado de México, México (Mexico); Martínez, H., E-mail: hm@fis.unam.mx [Instituto de Ciencias Fisicas, Universidad Nacional Autónoma de México, Apartado Postal 48-3, 62251, Cuernavaca, Morelos (Mexico); Calixto-Rodríguez, M. [Centro de Investigación en Energía, Universidad Autónoma del Estado de México, Estado de México, México (Mexico); Avellaneda, D. [Facultad de Ingeniería Mecánica y Eléctrica, Universidad Autónoma de Nuevo León, México (Mexico); Reyes, P.G. [Facultad de Ciencias, Universidad Autónoma del Estado de México, Estado de México, México (Mexico); Flores, O. [Instituto de Ciencias Fisicas, Universidad Nacional Autónoma de México, Apartado Postal 48-3, 62251, Cuernavaca, Morelos (Mexico)

    2013-06-15

    In this paper, we report modifications of structural and optical, electrical properties that occur in tin sulphide (SnS) treated in O{sub 2} plasma. The SnS thin films were deposited by chemical bath deposition technique. The samples were treated in an O{sub 2} plasma discharge at 3 Torr of pressure discharge, a discharge voltage of 2.5 kV and 20 mA of discharge current. The prepared and treated thin films were characterized by X-ray diffraction, scanning electron microscopy and energy dispersive X-ray analysis. The photoconductivity and electrical effects of SnS have been studied. The SnS thin films had an orthorhombic crystalline structure. With the plasma treatment the optical gap and electrical properties of the SnS films changed from 1.61 to 1.84 eV, for 3.9 × 10{sup 5} to 10.42 Ω cm, respectively. These changes can be attributed to an increase in electron density, percolation effects due to porosity, surface degradation/etching that is an increase in surface roughness, where some structural changes related to crystallinity occurs like a high grain size as revealed by SEM images.

  20. Participation of the Third Order Optical Nonlinearities in Nanostructured Silver Doped Zinc Oxide Thin Solid Films

    Directory of Open Access Journals (Sweden)

    C. Torres-Torres

    2012-01-01

    Full Text Available We report the transmittance modulation of optical signals in a nanocomposite integrated by two different silver doped zinc oxide thin solid films. An ultrasonic spray pyrolysis approach was employed for the preparation of the samples. Measurements of the third-order nonlinear optical response at a nonresonant 532 nm wavelength of excitation were performed using a vectorial two-wave mixing. It seems that the separated contribution of the optical nonlinearity associated with each film noticeable differs in the resulting nonlinear effects with respect to the additive response exhibited by the bilayer system. An enhancement of the optical Kerr nonlinearity is predicted for prime number arrays of the studied nanoclusters in a two-wave interaction. We consider that the nanostructured morphology of the thin solid films originates a strong modification of the third-order optical phenomena exhibited by multilayer films based on zinc oxide.

  1. Research on precision grinding technology of large scale and ultra thin optics

    Science.gov (United States)

    Zhou, Lian; Wei, Qiancai; Li, Jie; Chen, Xianhua; Zhang, Qinghua

    2018-03-01

    The flatness and parallelism error of large scale and ultra thin optics have an important influence on the subsequent polishing efficiency and accuracy. In order to realize the high precision grinding of those ductile elements, the low deformation vacuum chuck was designed first, which was used for clamping the optics with high supporting rigidity in the full aperture. Then the optics was planar grinded under vacuum adsorption. After machining, the vacuum system was turned off. The form error of optics was on-machine measured using displacement sensor after elastic restitution. The flatness would be convergenced with high accuracy by compensation machining, whose trajectories were integrated with the measurement result. For purpose of getting high parallelism, the optics was turned over and compensation grinded using the form error of vacuum chuck. Finally, the grinding experiment of large scale and ultra thin fused silica optics with aperture of 430mm×430mm×10mm was performed. The best P-V flatness of optics was below 3 μm, and parallelism was below 3 ″. This machining technique has applied in batch grinding of large scale and ultra thin optics.

  2. Impact of Argon gas on optical and electrical properties of Carbon thin films

    Energy Technology Data Exchange (ETDEWEB)

    Usman, Arslan, E-mail: arslan.usman@gmail.com [Department of Physics, COMSATS Institute of Information Technology, Lahore (Pakistan); Rafique, M.S. [Department of Physics, University of Engineering & Technology, Lahore 54890 (Pakistan); Shaukat, S.F. [Department of Physics, COMSATS Institute of Information Technology, Lahore (Pakistan); Siraj, Khurram [Department of Physics, University of Engineering & Technology, Lahore 54890 (Pakistan); Ashfaq, Afshan [Institute of Nuclear Medicine and Oncology Lahore (INMOL), 54000 Pakistan (Pakistan); Anjum, Safia [Department of Physics, Lahore College for Women University (Pakistan); Imran, Muhammad; Sattar, Abdul [Department of Physics, COMSATS Institute of Information Technology, Lahore (Pakistan)

    2016-12-15

    Nanostructured thin films of carbon were synthesized and investigated for their electrical, optical, structural and surface properties. Pulsed Laser Deposition (PLD) technique was used for the preparation of these films under Argon gas environment. A KrF Laser (λ=248 nm) was used as source of ablation and plasma formation. It was observed that the carbon ions and the background gas environment has deep impact on the morphology as well as on the microstructure of the films. Time of Flight (TOF) method was used to determine the energies of the ablated carbon ions. The morphology of film surfaces deposited at various argon pressure was analysed using an atomic force microscope. The Raman spectroscopic measurement reveal that there is shift in phase from sp{sup 3} to sp{sup 2} and a decrease in FWHM of G band, which is a clear indication of enhanced graphitic clusters. The electrical resistivity was also reduced from 85.3×10{sup −1} to 2.57×10{sup −1} Ω-cm. There is an exponential decrease in band gap E{sub g} of the deposited films from 1.99 to 1.37 eV as a function of argon gas pressure.

  3. Recent progress in thin film processing by magnetron sputtering with plasma diagnostics

    International Nuclear Information System (INIS)

    Han, Jeon G

    2009-01-01

    The precise control of the structure and related properties becomes crucial for sophisticated applications of thin films deposited by magnetron sputtering in emerging industries including the flat panel display, digital electronics and nano- and bio-industries. The film structure is closely related to the total energy delivered to the substrate surface for nucleation and growth during all kinds of thin film processes, including magnetron sputtering. Therefore, the energy delivered to the surface for nucleation and growth during magnetron sputtering should be measured and analysed by integrated diagnostics of the plasma parameters which are closely associated with the process parameters and other external process conditions. This paper reviews the background of thin film nucleation and growth, the status of magnetron sputtering technology and the progress of plasma diagnostics for plasma processing. The evolution of the microstructure during magnetron sputtering is then discussed with respect to the change in the process variables in terms of the plasma parameters along with empirical data of the integrated plasma diagnostics for various magnetron sputtering conditions with conventional dc, pulsed dc and high power pulsed dc sputtering modes. Among the major energy terms to be discussed are the temperature change in the top surface region and the energies of ions and neutral species. (topical review)

  4. Towards Enhanced Performance Thin-film Composite Membranes via Surface Plasma Modification

    Science.gov (United States)

    Reis, Rackel; Dumée, Ludovic F.; Tardy, Blaise L.; Dagastine, Raymond; Orbell, John D.; Schutz, Jürg A.; Duke, Mikel C.

    2016-01-01

    Advancing the design of thin-film composite membrane surfaces is one of the most promising pathways to deal with treating varying water qualities and increase their long-term stability and permeability. Although plasma technologies have been explored for surface modification of bulk micro and ultrafiltration membrane materials, the modification of thin film composite membranes is yet to be systematically investigated. Here, the performance of commercial thin-film composite desalination membranes has been significantly enhanced by rapid and facile, low pressure, argon plasma activation. Pressure driven water desalination tests showed that at low power density, flux was improved by 22% without compromising salt rejection. Various plasma durations and excitation powers have been systematically evaluated to assess the impact of plasma glow reactions on the physico-chemical properties of these materials associated with permeability. With increasing power density, plasma treatment enhanced the hydrophilicity of the surfaces, where water contact angles decreasing by 70% were strongly correlated with increased negative charge and smooth uniform surface morphology. These results highlight a versatile chemical modification technique for post-treatment of commercial membrane products that provides uniform morphology and chemically altered surface properties. PMID:27363670

  5. Effect of substrate baking temperature on zinc sulfide and germanium thin films optical parameters

    Science.gov (United States)

    Liu, Fang; Gao, Jiaobo; Yang, Chongmin; Zhang, Jianfu; Liu, Yongqiang; Liu, Qinglong; Wang, Songlin; Mi, Gaoyuan; Wang, Huina

    2016-10-01

    ZnS and Ge are very normal optical thin film materials in Infrared wave. Studying the influence of different substrate baking temperature to refractive index and actual deposition rates is very important to promote optical thin film quality. In the same vacuum level, monitoring thickness and evaporation rate, we use hot evaporation to deposit ZnS thin film materials and use ion-assisted electron beam to deposit Ge thin film materials with different baking temperature. We measure the spectral transmittance with the spectrophotometer and calculate the actual deposition rates and the refractive index in different temperature. With the higher and higher temperature in a particular range, ZnS and Ge refractive index become higher and actual deposition rates become smaller. The refractive index of Ge film material change with baking temperature is more sensitive than ZnS. However, ZnS film actual deposition rates change with baking temperature is more sensitive than Ge.

  6. Plasma control using neural network and optical emission spectroscopy

    International Nuclear Information System (INIS)

    Kim, Byungwhan; Bae, Jung Ki; Hong, Wan-Shick

    2005-01-01

    Due to high sensitivity to process parameters, plasma processes should be tightly controlled. For plasma control, a predictive model was constructed using a neural network and optical emission spectroscopy (OES). Principal component analysis (PCA) was used to reduce OES dimensionality. This approach was applied to an oxide plasma etching conducted in a CHF 3 /CF 4 magnetically enhanced reactive ion plasma. The etch process was systematically characterized by means of a statistical experimental design. Three etch outputs (etch rate, profile angle, and etch rate nonuniformity) were modeled using three different approaches, including conventional, OES, and PCA-OES models. For all etch outputs, OES models demonstrated improved predictions over the conventional or PCA-OES models. Compared to conventional models, OES models yielded an improvement of more than 25% in modeling profile angle and etch rate nonuniformtiy. More than 40% improvement over PCA-OES model was achieved in modeling etch rate and profile angle. These results demonstrate that nonreduced in situ data are more beneficial than reduced one in constructing plasma control model

  7. A new thin film deposition process by cathodic plasma electrolysis

    International Nuclear Information System (INIS)

    Paulmier, T.; Kiriakos, E.; Bell, J.; Fredericks, P.

    2004-01-01

    Full text: A new technique, called atmospheric pressure plasma deposition (APPD), has been developed since a few years for the deposition of carbon and DLC, Titanium or Silicon films on metal and metal alloys substrates. A high voltage (2kV) is applied in a liquid electrolytic solution between an anode and a cathode, both electrodes being cylindrical: a glow discharge is then produced and confined at the vicinity of the cathode. The physic of the plasma in the electrolytic solution near the cathode is very different form the other techniques of plasma deposition since the pressure is here close to the atmospheric pressure. We describe here the different physico-chemical processes occurring during the process. In this cathodic process, the anodic area is significantly larger than the cathode area. In a first step, the electrolytic solution is heated by Joule effect induced by the high voltage between the electrodes. Due to the high current density, the vaporization of the solution occurs near the cathode: a large amount of bubbles are produced which are stabilized at the electrode by hydrodynamic and electromagnetic forces, forming a vapour sheath. The electric field and voltage drop are then concentrated in this gas envelope, inducing the ionization of the gas and the ignition of a glow discharge at the surface of the material. This plasma induces the formation of ionized and reactive species which diffuse and are accelerated toward the cathode. These excited species are the precursors for the formation of the deposition material. At the same time, the glow discharge interacts with the electrolyte solution inducing also ionization, convection and polymerization processes in the liquid: the solution is therefore a second source of the deposition material. A wide range of films have been deposited with a thickness up to 10 micrometers. These films have been analyzed by SEM and Raman spectroscopy. The electrolytic solution has been characterized by GC-MS and the

  8. Polymorphous silicon thin films produced in dusty plasmas: application to solar cells

    International Nuclear Information System (INIS)

    Roca i Cabarrocas, Pere; Chaabane, N; Kharchenko, A V; Tchakarov, S

    2004-01-01

    We summarize our current understanding of the optimization of PIN solar cells produced by plasma enhanced chemical vapour deposition from silane-hydrogen mixtures. To increase the deposition rate, the discharge is operated under plasma conditions close to powder formation, where silicon nanocrystals contribute to the deposition of so-called polymorphous silicon thin films. We show that the increase in deposition rate can be achieved via an accurate control of the plasma parameters. However, this also results in a highly defective interface in the solar cells due to the bombardment of the P-layer by positively charged nanocrystals during the deposition of the I-layer. We show that decreasing the ion energy by increasing the total pressure or by using silane-helium mixtures allows us to increase both the deposition rate and the solar cells efficiency, as required for cost effective thin film photovoltaics

  9. Preparation of anatase TiO2 thin films by vacuum arc plasma evaporation

    International Nuclear Information System (INIS)

    Miyata, Toshihiro; Tsukada, Satoshi; Minami, Tadatsugu

    2006-01-01

    Anatase titanium dioxide (TiO 2 ) thin films with high photocatalytic activity have been prepared with deposition rates as high as 16 nm/min by a newly developed vacuum arc plasma evaporation (VAPE) method using sintered TiO 2 pellets as the source material. Highly transparent TiO 2 thin films prepared at substrate temperatures from room temperature to 400 deg. C exhibited photocatalytic activity, regardless whether oxygen (O 2 ) gas was introduced during the VAPE deposition. The highest photocatalytic activity and photo-induced hydrophilicity were obtained in anatase TiO 2 thin films prepared at 300 deg. C, which correlated to the best crystallinity of the films, as evidenced from X-ray diffraction. In addition, a transparent and conductive anatase TiO 2 thin film with a resistivity of 2.6 x 10 -1 Ω cm was prepared at a substrate temperature of 400 deg. C without the introduction of O 2 gas

  10. Method of generating magnetoactive plasma for forming thin surface layers on solid substrates and equipment therefor

    International Nuclear Information System (INIS)

    Bardos, L.; Loncar, G.; Musil, J.; Zacek, F.

    1979-01-01

    The invention essentially consists in the use of the axially symmetrical high-frequency magnetized plasma column for thin layer formation. The plasma is generated using a cylindrical microwave slow-down structure in the outer magnetic field. Plasma particles density and temperature and their radial distribution are adjusted by changing the intensity of the magnetic field and of high-frequency power. The plasma may be generated from any gases in a pressure range of 10 -3 to 10 2 Pa. In an oxygen plasma, e.g., it is thus possible to form layers of 200 nm in thickness in 60 mins at an input high-frequency power of 100 to 300 W. (J.U.)

  11. Optical properties of CdS thin films by (SILAR) method

    International Nuclear Information System (INIS)

    Ates, A.; Gurbulak, B.; Yildirim, M.

    2004-01-01

    Full text: CdS thin film was grown by Successive ionic layer adsorption and reaction (SILAR) technique on quartz substrate. The film homogeneous of film is good and the film colour obtained as orange. Optical properties of CdS thin film has been investigated as a function of temperature in the temperature range 10-320 K with 10 K steps. The band gap energy decreased with increasing temperature

  12. Characteristics of ITO films with oxygen plasma treatment for thin film solar cell applications

    Energy Technology Data Exchange (ETDEWEB)

    Park, Yong Seob [Department of Photoelectronics Information, Chosun College of Science and Technology, Gwangju (Korea, Republic of); Kim, Eungkwon [Digital Broadcasting Examination, Korean Intellectual Property Office, Daejeon, Suwon 440-746 (Korea, Republic of); Hong, Byungyou [School of Electronic and Electrical Engineering, Sungkyunkwan University, Cheoncheon-dong, 300, Jangan-gu, Suwon 440-746 (Korea, Republic of); Lee, Jaehyoeng, E-mail: jaehyeong@skku.edu [School of Electronic and Electrical Engineering, Sungkyunkwan University, Cheoncheon-dong, 300, Jangan-gu, Suwon 440-746 (Korea, Republic of)

    2013-12-15

    Graphical abstract: The effect of O{sub 2} plasma treatment on the surface and the work function of ITO films. - Highlights: • ITO films were prepared on the glass substrate by RF magnetron sputtering method. • Effects of O{sub 2} plasma treatment on the properties of ITO films were investigated. • The work function of ITO film was changed from 4.67 to 5.66 eV by plasma treatment. - Abstract: The influence of oxygen plasma treatment on the electro-optical and structural properties of indium-tin-oxide films deposited by radio frequency magnetron sputtering method were investigated. The films were exposed at different O{sub 2} plasma powers and for various durations by using the plasma enhanced chemical vapor deposition (PECVD) system. The resistivity of the ITO films was almost constant, regardless of the plasma treatment conditions. Although the optical transmittance of ITO films was little changed by the plasma power, the prolonged treatment slightly increased the transmittance. The work function of ITO film was changed from 4.67 eV to 5.66 eV at the plasma treatment conditions of 300 W and 60 min.

  13. Pulsed laser deposited Al-doped ZnO thin films for optical applications

    Directory of Open Access Journals (Sweden)

    Gurpreet Kaur

    2015-02-01

    Full Text Available Highly transparent and conducting Al-doped ZnO (Al:ZnO thin films were grown on glass substrates using pulsed laser deposition technique. The profound effect of film thickness on the structural, optical and electrical properties of Al:ZnO thin films was observed. The X-ray diffraction depicts c-axis, plane (002 oriented thin films with hexagonal wurtzite crystal structure. Al-doping in ZnO introduces a compressive stress in the films which increase with the film thickness. AFM images reveal the columnar grain formation with low surface roughness. The versatile optical properties of Al:ZnO thin films are important for applications such as transparent electromagnetic interference (EMI shielding materials and solar cells. The obtained optical band gap (3.2–3.08 eV was found to be less than pure ZnO (3.37 eV films. The lowering in the band gap in Al:ZnO thin films could be attributed to band edge bending phenomena. The photoluminescence spectra gives sharp visible emission peaks, enables Al:ZnO thin films for light emitting devices (LEDs applications. The current–voltage (I–V measurements show the ohmic behavior of the films with resistivity (ρ~10−3 Ω cm.

  14. Determination of optical properties in nanostructured thin films using the Swanepoel method

    International Nuclear Information System (INIS)

    Sanchez-Gonzalez, J.; Diaz-Parralejo, A.; Ortiz, A.L.; Guiberteau, F.

    2006-01-01

    We present the methodological framework of the Swanepoel method for the spectrophotometric determination of optical properties in thin films using transmittance data. As an illustrative case study, we determined the refractive index, thickness, absorption index, and extinction coefficient of a nanostructured 3 mol% Y 2 O 3 -doped ZrO 2 (yttria stabilized zirconia, 3YSZ) thin film prepared by the sol-gel method and deposited by dipping onto a soda-lime glass substrate. In addition, using the absorption index obtained with the Swanepoel method, we calculated the optical band gap of the film. The refractive index was found to increase, then decrease, and finally stabilize with increasing wavelength of the radiation, while the absorption index and extinction coefficient decreased monotonically to zero. These trends are explained in terms of the location of the absorption bands. We also deduced that this 3YSZ thin film has a direct optical band gap of 4.6 eV. All these results compared well with those given in the literature for similar thin films. This suggests that the Swanepoel method has an important role to play in the optical characterization of ceramic thin films

  15. Determination of optical properties in nanostructured thin films using the Swanepoel method

    Energy Technology Data Exchange (ETDEWEB)

    Sanchez-Gonzalez, J. [Departamento de Electronica e Ingenieria Electromecanica, Escuela de Ingenierias Industriales, Universidad de Extremadura, Badajoz 06071 (Spain); Diaz-Parralejo, A. [Departamento de Electronica e Ingenieria Electromecanica, Escuela de Ingenierias Industriales, Universidad de Extremadura, Badajoz 06071 (Spain); Ortiz, A.L. [Departamento de Electronica e Ingenieria Electromecanica, Escuela de Ingenierias Industriales, Universidad de Extremadura, Badajoz 06071 (Spain)]. E-mail: alortiz@unex.es; Guiberteau, F. [Departamento de Electronica e Ingenieria Electromecanica, Escuela de Ingenierias Industriales, Universidad de Extremadura, Badajoz 06071 (Spain)

    2006-06-30

    We present the methodological framework of the Swanepoel method for the spectrophotometric determination of optical properties in thin films using transmittance data. As an illustrative case study, we determined the refractive index, thickness, absorption index, and extinction coefficient of a nanostructured 3 mol% Y{sub 2}O{sub 3}-doped ZrO{sub 2} (yttria stabilized zirconia, 3YSZ) thin film prepared by the sol-gel method and deposited by dipping onto a soda-lime glass substrate. In addition, using the absorption index obtained with the Swanepoel method, we calculated the optical band gap of the film. The refractive index was found to increase, then decrease, and finally stabilize with increasing wavelength of the radiation, while the absorption index and extinction coefficient decreased monotonically to zero. These trends are explained in terms of the location of the absorption bands. We also deduced that this 3YSZ thin film has a direct optical band gap of 4.6 eV. All these results compared well with those given in the literature for similar thin films. This suggests that the Swanepoel method has an important role to play in the optical characterization of ceramic thin films.

  16. Effect of Target Density on Microstructural, Electrical, and Optical Properties of Indium Tin Oxide Thin Films

    Science.gov (United States)

    Zhu, Guisheng; Zhi, Li; Yang, Huijuan; Xu, Huarui; Yu, Aibing

    2012-09-01

    In this paper, indium tin oxide (ITO) targets with different densities were used to deposit ITO thin films. The thin films were deposited from these targets at room temperature and annealed at 750°C. Microstructural, electrical, and optical properties of the as-prepared films were studied. It was found that the target density had no effect on the properties or deposition rate of radiofrequency (RF)-sputtered ITO thin films, different from the findings for direct current (DC)-sputtered films. Therefore, when using RF sputtering, the target does not require a high density and may be reused.

  17. Optical characterization of a-Si:H thin films grown by Hg-Photo-CVD

    International Nuclear Information System (INIS)

    Barhdadi, A.; Karbal, S.; M'Gafad, N.; Benmakhlouf, A.; Chafik El Idrissi, M.; Aka, B.M.

    2006-08-01

    Mercury-Sensitized Photo-Assisted Chemical Vapor Deposition (Hg-Photo-CVD) technique opens new possibilities for reducing thin film growth temperature and producing novel semiconductor materials suitable for the future generation of high efficiency thin film solar cells onto low cost flexible plastic substrates. This paper provides some experimental data resulting from the optical characterization of hydrogenated amorphous silicon thin films grown by this deposition technique. Experiments have been performed on both as-deposited layers and thermal annealed ones. (author) [fr

  18. Structural and optical properties of Sb65Se35-xGex thin films

    Science.gov (United States)

    Saleh, S. A.; Al-Hajry, A.; Ali, H. M.

    2011-07-01

    Sb65Se35-xGex (x=0-20 at.%) thin films, prepared by the electron beam evaporation technique on ultrasonically cleaned glass substrates at 300 K, were investigated. The amorphous structure of the thin films was confirmed by x-ray diffraction analysis. The structure was deduced from the Raman spectra measured for all germanium contents in the Sb-Se-Ge matrix. The absorption coefficient (α) of the films was determined by optical transmission measurements. The compositional dependence of the optical band gap is discussed in light of topological and chemical ordered network models.

  19. The Effect of Deposition Rate on Electrical, Optical and Structural Properties of ITO Thin Films

    Directory of Open Access Journals (Sweden)

    P. S. Raghupathi

    2005-01-01

    Full Text Available Indium tin oxide (ITO thin films have been prepared using the reactive evaporation technique on glass substrates in an oxygen atmosphere. It is found that the deposition rate plays prominent role in controlling the electrical and optical properties of the ITO thin films. Resistivity, electrical conductivity, activation energy, optical transmission and band gap energy were investigated. A transmittance value of more than 90% in the visible region of the spectrum and an electrical conductivity of 3x10–6 Ωm has been obtained with a deposition rate of 2 nm/min. XRD studies showed that the films are polycrystalline.

  20. Enhancement of absorption and color contrast in ultra-thin highly absorbing optical coatings

    Science.gov (United States)

    Kats, Mikhail A.; Byrnes, Steven J.; Blanchard, Romain; Kolle, Mathias; Genevet, Patrice; Aizenberg, Joanna; Capasso, Federico

    2013-09-01

    Recently a new class of optical interference coatings was introduced which comprises ultra-thin, highly absorbing dielectric layers on metal substrates. We show that these lossy coatings can be augmented by an additional transparent subwavelength layer. We fabricated a sample comprising a gold substrate, an ultra-thin film of germanium with a thickness gradient, and several alumina films. The experimental reflectivity spectra showed that the additional alumina layer increases the color range that can be obtained, in agreement with calculations. More generally, this transparent layer can be used to enhance optical absorption, protect against erosion, or as a transparent electrode for optoelectronic devices.

  1. Structural and optical properties of cobalt doped multiferroics BiFeO3 nanostructure thin films

    Science.gov (United States)

    Prasannakumara, R.; Naik, K. Gopalakrishna

    2018-05-01

    Bismuth ferrite (BiFeO3) and Cobalt doped BiFeO3 (BiFe1-XCoXO3) nanostructure thin films were deposited on glass substrates by the sol-gel spin coating method. The X-ray diffraction patterns (XRD) of the grown BiFeO3 and BiFe1-XCoXO3 nanostructure thin films showed distorted rhombohedral structure. The shifting of peaks to higher angles was observed in cobalt doped BiFeO3. The surface morphology of the BiFeO3 and BiFe1-XCoXO3 nanostructure thin films were studied using FESEM, an increase in grain size was observed as Co concentration increases. The thickness of the nanostructure thin films was examined using FESEM cross-section. The EDX studies confirmed the elemental composition of the grown BiFeO3 and BiFe1-XCoXO3 nanostructure thin films. The optical characterizations of the grown nanostructure thin films were carried out using FTIR, it confirms the existence of Fe-O and Bi-O bands and UV-Visible spectroscopy shows the increase in optical band gap of the BiFeO3 nanostructure thin films with Co doping by ploting Tauc plot.

  2. The influence of monomer concentration on the optical properties of electrochemically synthesized polypyrrole thin films

    International Nuclear Information System (INIS)

    Thombare, J. V.; Fulari, V. J.; Rath, M. C.; Han, S. H.

    2013-01-01

    Polypyrrole (PPy) thin films were deposited on stainless steel and ITO coated glass substrate at a constant deposition potential of 0.8 V versus saturated calomel electrode (SCE) by using the electrochemical polymerization method. The PPy thin films were deposited at room temperature at various monomer concentrations ranging from 0.1 M to 0.3 M pyrrole. The structural and optical properties of the polypyrrole thin films were investigated using an X-ray diffractometer (XRD), FTIR spectroscopy, scanning electron microscopy (SEM), and ultraviolet—visible (UV—vis) spectroscopy. The XRD results show that polypyrrole thin films have a semi crystalline structure. Higher monomer concentration results in a slight increase of crystallinity. The polypyrrole thin films deposited at higher monomer concentration exhibit high visible absorbance. The refractive indexes of the polypyrrole thin films are found to be in the range of 1 to 1.3 and vary with monomer concentration as well as wavelength. The extinction coefficient decreases slightly with monomer concentration. The electrochemically synthesized polypyrrole thin film shows optical band gap energy of 2.14 eV. (semiconductor materials)

  3. Correlation of morphology and barrier properties of thin microwave plasma polymer films on metal substrate

    International Nuclear Information System (INIS)

    Barranco, V.; Carpentier, J.; Grundmeier, G.

    2004-01-01

    The barrier properties of thin model organosilicon plasma polymers layers on iron are characterised by means of electrochemical impedance spectroscopy (EIS). Tailored thin plasma polymers of controlled morphology and chemical composition were deposited from a microwave discharge. By the analysis of the obtained impedance diagrams, the evolution of the water uptake φ, coating resistance and polymer capacitance with immersion time were monitored and the diffusion coefficients of the water through the films were calculated. The impedance data correlated well with the chemical structure and morphology of the plasma polymer films with a thickness of less than 100 nm. The composition of the films were determined by means of infrared reflection absorption spectroscopy (IRRAS), X-ray photoelectron spectroscopy (XPS) and time-of-flight secondary ion mass spectrometry (ToF-SIMS). The morphology of the plasma polymer surface and the interface between the plasma polymer and the metal were characterised using atomic force microscopy (AFM). It could be shown that, at higher pressure, the film roughness increases which is probably due to the adsorption of plasma polymer nanoparticles formed in the plasma bulk and the faster film growth. This leads to voids with a size of a few tens of nanometers at the polymer/metal interface. The film roughness increases from the interface to the outer surface of the film. By lowering the pressure and thereby slowing the deposition rate, the plasma polymers perfectly imitate the substrate topography and lead to an excellent blocking of the metal surface. Moreover, the ratio of siloxane bonds to methyl-silyl groups increases which implies that the crosslink density is higher at lower deposition rate. The EIS data consistently showed higher coating resistance as well as lower interfacial capacitance values and a better stability over time for the film deposited at slower pressure. The diffusion coefficient of water in thin and ultra-thin plasma

  4. Optical and morphological characterizations of pyronin dye-poly (vinyl alcohol) thin films formed on glass substrates

    International Nuclear Information System (INIS)

    Meral, Kadem; Arik, Mustafa; Onganer, Yavuz

    2016-01-01

    Thin films of pyronin dye mixed with poly(vinyl alcohol) (PVA) on glass substrate were prepared by using spin-coating technique. The optical and morphological properties of the thin films were studied by UV-Vis., steady-state fluorescence spectroscopies and atomic force microscopy (AFM). The thin films on glass substrate were fabricated at various [PVA]/[dye] (P/D) ratios. Hence, the monomeric and H-aggregates thin films of pyronin dye mixed with PVA were formed as a function of the dye and PVA concentration. It was determined that while the monomeric thin films showed strong fluorescence, the formation of H-aggregates in the thin film caused to decreasing the fluorescence intensity. AFM studies demonstrated that the morphology of the thin film was drastically varied with changing the optical property of the thin film such as monomeric and H-aggregates thin films.

  5. Optical and morphological characterizations of pyronin dye-poly (vinyl alcohol) thin films formed on glass substrates

    Energy Technology Data Exchange (ETDEWEB)

    Meral, Kadem, E-mail: kademm@atauni.edu.tr; Arik, Mustafa, E-mail: marik@tatauni.edu.tr; Onganer, Yavuz, E-mail: yonganer@atauni.edu.tr [Department of Chemistry, Faculty of Sciences, Atatürk University, 25240 Erzurum (Turkey)

    2016-04-18

    Thin films of pyronin dye mixed with poly(vinyl alcohol) (PVA) on glass substrate were prepared by using spin-coating technique. The optical and morphological properties of the thin films were studied by UV-Vis., steady-state fluorescence spectroscopies and atomic force microscopy (AFM). The thin films on glass substrate were fabricated at various [PVA]/[dye] (P/D) ratios. Hence, the monomeric and H-aggregates thin films of pyronin dye mixed with PVA were formed as a function of the dye and PVA concentration. It was determined that while the monomeric thin films showed strong fluorescence, the formation of H-aggregates in the thin film caused to decreasing the fluorescence intensity. AFM studies demonstrated that the morphology of the thin film was drastically varied with changing the optical property of the thin film such as monomeric and H-aggregates thin films.

  6. Thermo-optic characteristic of DNA thin solid film and its application as a biocompatible optical fiber temperature sensor.

    Science.gov (United States)

    Hong, Seongjin; Jung, Woohyun; Nazari, Tavakol; Song, Sanggwon; Kim, Taeoh; Quan, Chai; Oh, Kyunghwan

    2017-05-15

    We report unique thermo-optical characteristics of DNA-Cetyl tri-methyl ammonium (DNA-CTMA) thin solid film with a large negative thermo-optical coefficient of -3.4×10-4/°C in the temperature range from 20°C to 70°C without any observable thermal hysteresis. By combining this thermo-optic DNA film and fiber optic multimode interference (MMI) device, we experimentally demonstrated a highly sensitive compact temperature sensor with a large spectral shift of 0.15 nm/°C. The fiber optic MMI device was a concatenated structure with single-mode fiber (SMF)-coreless silica fiber (CSF)-single mode fiber (SMF) and the DNA-CTMA film was deposited on the CSF. The spectral shifts of the device in experiments were compared with the beam propagation method, which showed a good agreement.

  7. Calculated power output from a thin iron-seeded plasma

    International Nuclear Information System (INIS)

    Merts, A.L.; Cowan, R.D.; Magee, N.H. Jr.

    1976-02-01

    Ionization equilibrium calculations are carried out for iron ions at a density of 10 12 cm -3 in a (hydrogen) plasma with electron density 10 14 cm -3 , at temperatures from 0.8 to 10 keV. The computed radiated power loss from this plasma due to the iron ions ranges from about 4 W/cm 3 at the lowest temperature to about 0.4 W/cm 3 at the highest temperature; loss rates for other electron and ion densities will scale approximately as N/sub e/N/sub Fe/10 26 . The losses are due principally to collisionally excited line radiation (especially Δn = 0 transitions) at low temperatures, and to collisionally excited Δn not equal to 0 transitions and to continuum radiative recombination at high temperatures. Spectra are also computed for diagnostic x-ray K/sub α/ (1s - 2p) transitions; the change in spectral distribution as a function of temperature agrees well with observations in the ST Tokamak. Bound-bound radiative transitions and dielectronic recombination are discussed at length in appendices; the latter process is of great importance in the establishment of ionization equilibrium, and in the excitation of K/sub α/ radiation at the lower temperatures

  8. Surface characterization of hydrophobic thin films deposited by inductively coupled and pulsed plasmas

    International Nuclear Information System (INIS)

    Kim, Youngsoo; Lee, Ji-Hye; Kim, Kang-Jin; Lee, Yeonhee

    2009-01-01

    Different fluorocarbon thin films were deposited on Si substrates using a plasma-polymerization method. Fluorine-containing hydrophobic thin films were obtained by inductively coupled plasma (ICP) and pulsed plasma (PP) with a mixture of fluorocarbon precursors C 2 F 6 , C 3 F 8 , and c-C 4 F 8 and the unsaturated hydrocarbons of C 2 H 2 . The influence on the fluorocarbon surfaces of the process parameters for plasma polymerization, including the gas ratio and the plasma power, were investigated under two plasma-polymerized techniques with different fluorocarbon gas precursors. The hydrophobic properties, surface morphologies, and chemical compositions were elucidated using water contact angle measurements, field emission-scanning electron microscope, x-ray photoelectron spectroscopy (XPS), Fourier transform infrared spectroscopy (FT-IR), and time-of-flight secondary ion mass spectrometry (TOF-SIMS). In this study, the ICP technique provides coarser grained films and more hydrophobic surfaces as well as a higher deposition rate compared to the PP technique. XPS, FT-IR, and TOF-SIMS analyses indicated that the ICP technique produced more fluorine-related functional groups, including CF 2 and CF 3 , on the surface. From the curve-fitted XPS results, fluorocarbon films grown under ICP technique exhibited less degree of cross-linking and higher CF 2 concentrations than those grown under PP technique.

  9. Plasma-treated Langmuir-Blodgett reduced graphene oxide thin film for applications in biophotovoltaics

    Science.gov (United States)

    Ibrahim, Siti Aisyah; Jaafar, Muhammad Musoddiq; Ng, Fong-Lee; Phang, Siew-Moi; Kumar, G. Ghana; Majid, Wan Haliza Abd; Periasamy, Vengadesh

    2018-01-01

    The surface optimization and structural characteristics of Langmuir-Blodgett (LB) reduced graphene oxide thin (rGO) film treated by argon plasma treatment were studied. In this work, six times deposition of rGO was deposited on a clean glass substrate using the LB method. Plasma technique involving a variation of plasma power, i.e., 20, 60, 100 and 140 W was exposed to the LB-rGO thin films under argon ambience. The plasma treatment generally improves the wettability or hydrophilicity of the film surface compared to without treatment. Maximum wettability was observed at a plasma power of 20 W, while also increasing the adhesion of the rGO film with the glass substrate. The multilayer films fabricated were characterized by means of spectroscopic, structural and electrical studies. The treatment of rGO with argon plasma was found to have improved its biocompatibility, and thus its performance as an electrode for biophotovoltaic devices has been shown to be enhanced considerably.

  10. Transparent conductive p-type lithium-doped nickel oxide thin films deposited by pulsed plasma deposition

    Science.gov (United States)

    Huang, Yanwei; Zhang, Qun; Xi, Junhua; Ji, Zhenguo

    2012-07-01

    Transparent p-type Li0.25Ni0.75O conductive thin films were prepared on conventional glass substrates by pulsed plasma deposition. The effects of substrate temperature and oxygen pressure on structural, electrical and optical properties of the films were investigated. The electrical resistivity decreases initially and increases subsequently as the substrate temperature increases. As the oxygen pressure increases, the electrical resistivity decreases monotonically. The possible physical mechanism was discussed. And a hetero p-n junction of p-Li0.25Ni0.75O/n-SnO2:W was fabricated by depositing n-SnO2:W on top of the p-Li0.25Ni0.75O, which exhibits typical rectifying current-voltage characteristics.

  11. Transparent conductive p-type lithium-doped nickel oxide thin films deposited by pulsed plasma deposition

    International Nuclear Information System (INIS)

    Huang Yanwei; Zhang Qun; Xi Junhua; Ji Zhenguo

    2012-01-01

    Transparent p-type Li 0.25 Ni 0.75 O conductive thin films were prepared on conventional glass substrates by pulsed plasma deposition. The effects of substrate temperature and oxygen pressure on structural, electrical and optical properties of the films were investigated. The electrical resistivity decreases initially and increases subsequently as the substrate temperature increases. As the oxygen pressure increases, the electrical resistivity decreases monotonically. The possible physical mechanism was discussed. And a hetero p-n junction of p-Li 0.25 Ni 0.75 O/n-SnO 2 :W was fabricated by depositing n-SnO 2 :W on top of the p-Li 0.25 Ni 0.75 O, which exhibits typical rectifying current-voltage characteristics.

  12. Crystalline silicon thin film growth by ECR plasma CVD for solar cells

    International Nuclear Information System (INIS)

    Licai Wang

    1999-07-01

    This thesis describes the background, motivation and work carried out towards this PhD programme entitled 'Crystalline Silicon Thin Film Growth by ECR Plasma CVD for Solar Cells'. The fundamental principles of silicon solar cells are introduced with a review of silicon thin film and bulk solar cells. The development and prospects for thin film silicon solar cells are described. Some results of a modelling study on thin film single crystalline solar cells are given which has been carried out using a commercially available solar cell simulation package (PC-1D). This is followed by a description of thin film deposition techniques. These include Chemical Vapour Deposition (CVD) and Plasma-Assisted CVD (PACVD). The basic theory and technology of the emerging technique of Electron Cyclotron Resonance (ECR) PACVD, which was used in this research, are introduced and the potential advantages summarised. Some of the basic methods of material and cell characterisation are briefly described, together with the work carried out in this research. The growth by ECR PACVD at temperatures 2 illumination. The best efficiency in the ECR grown structures was 13.76% using an epitaxial emitter. Cell performance was analysed in detail and the factors controlling performance identified by fitting self-consistently the fight and dark current-voltage and spectral response data using PC-1D. Finally, the conclusions for this research and suggestions for further work are outlined. (author)

  13. Orienting Block Copolymer Thin Films via Entropy and Surface Plasma Treatment

    Science.gov (United States)

    Ho, Rong-Ming; Lu, Kai-Yuan; Lo, Ting-Ya; Dehghan, Ashkan; Shi, An-Chang; Prokopios, Georgopanos; Avgeropoulos, Apostolos

    Controlling the orientation of nanostructured thin films of block copolymers (BCPs) is essential for next generation lithography. In the thin-film state, how to achieve the perpendicular orientation of the nanostructured microdomains remains challenging due to the interfacial effects from the air and also the substrate, especially for the blocks with silicon containing segments which usually have different surface energies, favoring parallel microdomain orientation. Here, we show that entropic effect can be used to control the orientation of BCP thin films. Specifically, we used the architecture of star-block copolymers consisting of polystyrene (PS) and poly(dimethylsiloxane) (PDMS) blocks to regulate the entropic contribution to the self-assembled nanostructures. Moreover, we aim to achieve the formation of perpendicular orientation from the air surface via surface plasma treatment to neutralize the interfacial energy difference. By combining the architecture effect (entropy effect) on BCP self-assembly and the surface plasma treatment (enthalpy effect), well-defined perpendicular PDMS microdomains in the PS-b-PDMS thin film can be formed from the bottom of non-neutral substrate and the top of the thin film surface, giving great potential for lithographic applications.

  14. Effect of nitrogen environment on NdFeB thin films grown by radio frequency plasma beam assisted pulsed laser deposition

    International Nuclear Information System (INIS)

    Constantinescu, C.; Patroi, E.; Codescu, M.; Dinescu, M.

    2013-01-01

    Highlights: ► NdFeB thin films grown by PLD, in vacuum and in nitrogen, are presented. ► Nitrogen inclusion in thin film structures is related to improved coercitivity. ► Magnetical, optical and morphological properties of the thin films are discussed. - Abstract: NdFeB is a very attractive material for applications in electrical engineering and in electronics, for high-tech devices where high coercive field and high remanence are needed. In this paper we demonstrate that the deposition of nitrogen doped NdFeB thin films by pulsed laser deposition, in the presence of a nitrogen radiofrequency plasma beam, exhibit improved magnetic properties and surface morphology, when compared to vacuum deposited NdFeB layers. A Nd:YAG pulsed laser (3ω and 4ω) was focused on a NdFeB target, in vacuum, or in the presence of a nitrogen plasma beam. Substrate temperature (RT-850 °C), nitrogen gas pressure, and radiofrequency power (75–150 W), were particularly varied. The thin films were investigated by means of X-ray diffraction, atomic force microscopy, scanning electron microscopy, spectroscopic-ellipsometry, and vibrating sample magnetometry.

  15. Effect of nitrogen environment on NdFeB thin films grown by radio frequency plasma beam assisted pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Constantinescu, C., E-mail: catalin.constantinescu@inflpr.ro [National Institute for Laser, Plasma and Radiation Physics, 409 Atomistilor bd., Magurele, RO-077125, Bucharest (Romania); Patroi, E.; Codescu, M. [National Institute for Research and Development in Electrical Engineering - Advanced Research, 313 Spl. Unirii, Sector 3, RO-030138, Bucharest (Romania); Dinescu, M. [National Institute for Laser, Plasma and Radiation Physics, 409 Atomistilor bd., Magurele, RO-077125, Bucharest (Romania)

    2013-03-01

    Highlights: Black-Right-Pointing-Pointer NdFeB thin films grown by PLD, in vacuum and in nitrogen, are presented. Black-Right-Pointing-Pointer Nitrogen inclusion in thin film structures is related to improved coercitivity. Black-Right-Pointing-Pointer Magnetical, optical and morphological properties of the thin films are discussed. - Abstract: NdFeB is a very attractive material for applications in electrical engineering and in electronics, for high-tech devices where high coercive field and high remanence are needed. In this paper we demonstrate that the deposition of nitrogen doped NdFeB thin films by pulsed laser deposition, in the presence of a nitrogen radiofrequency plasma beam, exhibit improved magnetic properties and surface morphology, when compared to vacuum deposited NdFeB layers. A Nd:YAG pulsed laser (3{omega} and 4{omega}) was focused on a NdFeB target, in vacuum, or in the presence of a nitrogen plasma beam. Substrate temperature (RT-850 Degree-Sign C), nitrogen gas pressure, and radiofrequency power (75-150 W), were particularly varied. The thin films were investigated by means of X-ray diffraction, atomic force microscopy, scanning electron microscopy, spectroscopic-ellipsometry, and vibrating sample magnetometry.

  16. Study of optically thin electron cyclotron emission from TFTR using a Michelson interferometer

    International Nuclear Information System (INIS)

    Stauffer, F.J.; Boyd, D.A.

    1986-01-01

    The TFTR Michelson interferometer, which is used as an electron temperature diagnostic, has a spectral range of 75-540 GHz. This range is adequate for measuring at least the first three cyclotron harmonics, and it spans both optically thick and thin portions of the ECE spectrum. During the most recent opening of the TFTR vacuum vessel, a concave, carbon reflector was installed on the back wall of the vessel, opposite the light collecting optic of the Michelson system. The reflector is designed to prevent the observation of optically thin ECE that originates from a location that is outside the field of view of the light collecting optic. If this is achieved, it should be possible to derive the electron density profile from measurements of either the extraordinary mode third harmonic or the ordinary mode second harmonic. An analysis of ECE spectra that have been measured before and after installation of the reflector is presented

  17. Experiments on helical modes in magnetized thin foil-plasmas

    Science.gov (United States)

    Yager-Elorriaga, David

    2017-10-01

    This paper gives an in-depth experimental study of helical features on magnetized, ultrathin foil-plasmas driven by the 1-MA linear transformer driver at University of Michigan. Three types of cylindrical liner loads were designed to produce: (a) pure magneto-hydrodynamic (MHD) modes (defined as being void of the acceleration-driven magneto-Rayleigh-Taylor instability, MRT) using a non-imploding geometry, (b) pure kink modes using a non-imploding, kink-seeded geometry, and (c) MRT-MHD coupled modes in an unseeded, imploding geometry. For each configuration, we applied relatively small axial magnetic fields of Bz = 0.2-2.0 T (compared to peak azimuthal fields of 30-40 T). The resulting liner-plasmas and instabilities were imaged using 12-frame laser shadowgraphy and visible self-emission on a fast framing camera. The azimuthal mode number was carefully identified with a tracking algorithm of self-emission minima. Our experiments show that the helical structures are a manifestation of discrete eigenmodes. The pitch angle of the helix is simply m / kR , from implosion to explosion, where m, k, and R are the azimuthal mode number, axial wavenumber, and radius of the helical instability. Thus, the pitch angle increases (decreases) during implosion (explosion) as R becomes smaller (larger). We found that there are one, or at most two, discrete helical modes that arise for magnetized liners, with no apparent threshold on the applied Bz for the appearance of helical modes; increasing the axial magnetic field from zero to 0.5 T changes the relative weight between the m = 0 and m = 1 modes. Further increasing the applied axial magnetic fields yield higher m modes. Finally, the seeded kink instability overwhelms the intrinsic instability modes of the plasma. These results are corroborated with our analytic theory on the effects of radial acceleration on the classical sausage, kink, and higher m modes. Work supported by US DOE award DE-SC0012328, Sandia National Laboratories

  18. The Electrical Properties of Plasma-Deposited Thin Films Derived from Pelargonium graveolens

    Directory of Open Access Journals (Sweden)

    Ahmed Al-Jumaili

    2017-10-01

    Full Text Available Inherently volatile at atmospheric pressure and room temperature, plant-derived precursors present an interesting human-health-friendly precursor for the chemical vapour deposition of thin films. The electrical properties of films derived from Pelargonium graveolens (geranium were investigated in metal–insulator–metal (MIM structures. Thin polymer-like films were deposited using plasma-enhanced synthesis under various plasma input power. The J–V characteristics of thus-fabricated MIM were then studied in order to determine the direct current (DC conduction mechanism of the plasma polymer layers. It was found that the capacitance of the plasma-deposited films decreases at low frequencies (C ≈ 10−11 and remains at a relatively constant value (C ≈ 10−10 at high frequencies. These films also have a low dielectric constant across a wide range of frequencies that decreases as the input RF power increases. The conductivity was determined to be around 10−16–10−17 Ω−1 m−1, which is typical for insulating materials. The Richardson–Schottky mechanism might dominate charge transport in the higher field region for geranium thin films.

  19. Amine Enrichment of Thin-Film Composite Membranes via Low Pressure Plasma Polymerization for Antimicrobial Adhesion.

    Science.gov (United States)

    Reis, Rackel; Dumée, Ludovic F; He, Li; She, Fenghua; Orbell, John D; Winther-Jensen, Bjorn; Duke, Mikel C

    2015-07-15

    Thin-film composite membranes, primarily based on poly(amide) (PA) semipermeable materials, are nowadays the dominant technology used in pressure driven water desalination systems. Despite offering superior water permeation and salt selectivity, their surface properties, such as their charge and roughness, cannot be extensively tuned due to the intrinsic fabrication process of the membranes by interfacial polymerization. The alteration of these properties would lead to a better control of the materials surface zeta potential, which is critical to finely tune selectivity and enhance the membrane materials stability when exposed to complex industrial waste streams. Low pressure plasma was employed to introduce amine functionalities onto the PA surface of commercially available thin-film composite (TFC) membranes. Morphological changes after plasma polymerization were analyzed by SEM and AFM, and average surface roughness decreased by 29%. Amine enrichment provided isoelectric point changes from pH 3.7 to 5.2 for 5 to 15 min of plasma polymerization time. Synchrotron FTIR mappings of the amine-modified surface indicated the addition of a discrete 60 nm film to the PA layer. Furthermore, metal affinity was confirmed by the enhanced binding of silver to the modified surface, supported by an increased antimicrobial functionality with demonstrable elimination of E. coli growth. Essential salt rejection was shown minimally compromised for faster polymerization processes. Plasma polymerization is therefore a viable route to producing functional amine enriched thin-film composite PA membrane surfaces.

  20. Effect of plasma power on reduction of printable graphene oxide thin films on flexible substrates

    Science.gov (United States)

    Banerjee, Indrani; Mahapatra, Santosh K.; Pal, Chandana; Sharma, Ashwani K.; Ray, Asim K.

    2018-05-01

    Room temperature hydrogen plasma treatment on solution processed 300 nm graphene oxide (GO) films on flexible indium tin oxide (ITO) coated polyethylene terephthalate (PET) substrates has been performed by varying the plasma power between 20 W and 60 W at a constant exposure time of 30 min with a view to examining the effect of plasma power on reduction of GO. X-ray powder diffraction (XRD) and Raman spectroscopic studies show that high energy hydrogen species generated in the plasma assist fast exfoliation of the oxygenated functional groups present in the GO samples. Significant decrease in the optical band gap is observed from 4.1 eV for untreated samples to 0.5 eV for 60 W plasma treated samples. The conductivity of the films treated with 60 W plasma power is estimated to be six orders of magnitude greater than untreated GO films and this enhancement of conductivity on plasma reduction has been interpreted in terms of UV-visible absorption spectra and density functional based first principle computational calculations. Plasma reduction of GO/ITO/PET structures can be used for efficiently tuning the electrical and optical properties of reduced graphene oxide (rGO) for flexible electronics applications.

  1. The gridless plasma ion source (GIS) for plasma ion assisted optical coating

    International Nuclear Information System (INIS)

    You Dawei; Li Xiaoqian; Wang Yu; Lin Yongchang

    2004-01-01

    High-quality optical coating is a key technology for modern optics. Ion-assisted deposition technology was used to improve the vaporized coating in 1980's. The GIS (gridless ion source), which is an advanced plasma source for producing a high-quality optical coating in large area, can produce a large area uniformity>1000 mm (diameter), a high ion current density ∼0.5 mA/cm 2 , 20 eV-200 eV energetic plasma ions and can activate reactive gas and film atoms. Now we have developed a GIS system. The GIS and the plasma ion-assisted deposition technology are investigated to achieve a high-quality optical coating. The GIS is a high power and high current source with a power of 1 kW-7.5 kW, a current of 10 A- 70 A and an ion density of 200 μA/cm 2 -500 μA/cm 2 . Because of the special magnetic structure, the plasma-ion extraction efficiency has been improved to obtain a maximum ion density of 500 μA/cm 2 in the medium power (∼4 kW) level. The GIS applied is of a special cathode structure, so that the GIS operation can be maintained under a rather low power and the lifetime of cathode will be extended. The GIS has been installed in the LPSX-1200 type box coating system. The coated TiO 2 , SiO 2 films such as antireflective films with the system have the same performance reported by Leybold Co, 1992, along with a controllable refractive index and film structure. (authors)

  2. Application of optical phase conjugation to plasma diagnostics (invited)

    International Nuclear Information System (INIS)

    Jahoda, F.C.; Anderson, B.T.; Forman, P.R.; Weber, P.G.

    1985-01-01

    Several possibilities for plasma diagnostics provided by optical phase conjugation and, in particular, self-pumped phase conjugation in barium titanate (BaTiO 3 ) are discussed. These include placing a plasma within a dye laser cavity equipped with a phase conjugate mirror for intracavity absorption measurements, time differential refractometry with high spatial resolution, and simplified real-time holographic interferometry. The principles of phase conjugation with particular reference to photorefractive media and the special advantages of self-pumped phase conjugation are reviewed prior to the discussion of the applications. Distinctions are made in the applications between those for which photorefractive conjugators are essential and those for which they only offer experimental simplification relative to other types of phase conjugators

  3. Characterization of low-temperature microwave loss of thin aluminum oxide formed by plasma oxidation

    Energy Technology Data Exchange (ETDEWEB)

    Deng, Chunqing, E-mail: cdeng@uwaterloo.ca; Otto, M.; Lupascu, A., E-mail: alupascu@uwaterloo.ca [Institute for Quantum Computing, Department of Physics and Astronomy, and Waterloo Institute for Nanotechnology, University of Waterloo, Waterloo, Ontario N2L 3G1 (Canada)

    2014-01-27

    We report on the characterization of microwave loss of thin aluminum oxide films at low temperatures using superconducting lumped resonators. The oxide films are fabricated using plasma oxidation of aluminum and have a thickness of 5 nm. We measure the dielectric loss versus microwave power for resonators with frequencies in the GHz range at temperatures from 54 to 303 mK. The power and temperature dependence of the loss are consistent with the tunneling two-level system theory. These results are relevant to understanding decoherence in superconducting quantum devices. The obtained oxide films are thin and robust, making them suitable for capacitors in compact microwave resonators.

  4. Optical refraction index and polarization profile of ferroelectric thin films

    Czech Academy of Sciences Publication Activity Database

    Glinchuk, M. D.; Eliseev, E. A.; Deineka, Alexander; Jastrabík, Lubomír; Suchaneck, G.; Sandner, T.; Gerlach, G.; Hrabovský, Miroslav

    2001-01-01

    Roč. 38, 1-4 (2001), s. 101-110 ISSN 1058-4587 R&D Projects: GA MŠk LN00A015; GA ČR GA202/00/1425 Institutional research plan: CEZ:AV0Z1010914 Keywords : thin film * refraction index * polarization * film thickness Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 0.512, year: 2001

  5. Characterisation and optical vapour sensing properties of PMMA thin films

    Energy Technology Data Exchange (ETDEWEB)

    Capan, I. [Balikesir University, Science and Arts Faculty, Physics Department, 10100 Balikesir (Turkey)], E-mail: inci.capan@gmail.com; Tarimci, C. [Ankara University, Faculty of Engineering, Department of Engineering Physics, 06100, Tandogan, Ankara (Turkey); Hassan, A.K. [Sheffield Hallam University, Materials and Engineering Research Institute, City Campus, Pond Street, Sheffield S1 1WB (United Kingdom); Tanrisever, T. [Balikesir University, Science and Arts Faculty, Chemistry Department, 10100 Balikesir (Turkey)

    2009-01-01

    The present article reports on the characterisation of spin coated thin films of poly (methyl methacrylate) (PMMA) for their use in organic vapour sensing application. Thin film properties of PMMA are studied by UV-visible spectroscopy, atomic force microscopy and surface plasmon resonance (SPR) technique. Results obtained show that homogeneous thin films with thickness in the range between 6 and 15 nm have been successfully prepared when films were spun at speeds between 1000-5000 rpm. Using SPR technique, the sensing properties of the spun films were studied on exposures to several halohydrocarbons including chloroform, dichloromethane and trichloroethylene. Data from measured kinetic response have been used to evaluate the sensitivity of the studied films to the various analyte molecules in terms of normalised response (%) per unit concentration (ppm). The highest PMMA film sensitivity of 0.067 normalised response per ppm was observed for chloroform vapour, for films spun at 1000 rpm. The high film's sensitivity to chloroform vapour was ascribed mainly to its solubility parameter and molar volume values. Effect of film thickness on the vapour sensing properties is also discussed.

  6. Thin layer alanine dosimeter with optical spectrophotometric evaluation

    International Nuclear Information System (INIS)

    Zagorski, Z.P.

    2000-01-01

    Experience in the high dose dosimetry of gamma radiation, gathered in our group from the sixties till now, allows to express the opinion, that techniques applied are adequate to solve problems. It can be confirmed by the fact that 60% of laboratories participating in the international comparison during the duration of the contract obtained satisfactory results. Adaptation of these methods, in particular of the alanine-ESR dosimetry to highly inhomogeneous fields of EB gives poor results, as it has been shown on thin films of the alanine/polymer composite. However, the applications of these films give excellent results if the concentration of the radical CH 3 C·H CO 2 - is measured by diffuse reflection spectrophotometry, which tolerates poor transparency of the composite and is insensitive to the orientation of crystals of alanine in thin films, what is disqualifying the ESR measurements. The development of thin-film dosimeters for EB processing was possible due to new developments in solid state radiation chemistry. The research has revealed some unsolved questions, e.g. of the high temperature coefficient of alanine based dosimeters, of the role of the size of spurs and the necessity to adapt dosimetry to the energy spectrum of electrons, because every type of accelerators differs in that respect. (author)

  7. Photoluminescence from PP-HMDSO thin films deposited using a remote plasma of 13.56 MHz hollow cathode discharge

    International Nuclear Information System (INIS)

    Naddaf, M; Saloum, S; Hamadeh, H

    2007-01-01

    Room temperature photoluminescence (PL) from plasma-polymerized hexamethyldisiloxane (PP-HMDSO) thin films deposited on silicon wafers has been investigated as a function of both the applied RF power and the monomer flow rate. Films were deposited in a low pressure-low temperature remote plasma ignited in a 13.56 MHz hollow cathode discharge reactor, using pure HMDSO as a monomer and Ar as a feed gas. The substrate temperature during the deposition was as low as 40 deg. C and the total pressure was about 0.03 mbar. Optical emission spectroscopy (OES) has been used as in situ tool for monitoring the different chemical species present in the plasma during deposition processes. The deposited PP-HMDSO films showed a strong, broad 'green/yellow' PL band. The RF power and the flow rate of the HMDSO monomer are found to have a significant impact on the PL intensity of the deposited film. The changes in the chemical bonding of the film as a function of deposition parameters have been investigated by using the Fourier transform infrared (FTIR) spectroscopic analysis and are related to PL and OES results. The 'green/yellow' PL band is ascribed to chemical groups and bonds of silicon, hydrogen and/or oxygen constituting the films, in particular, SiH, SiO bonds and silanol Si-O-H groups

  8. Photoluminescence from PP-HMDSO thin films deposited using a remote plasma of 13.56 MHz hollow cathode discharge

    Science.gov (United States)

    Naddaf, M.; Saloum, S.; Hamadeh, H.

    2007-07-01

    Room temperature photoluminescence (PL) from plasma-polymerized hexamethyldisiloxane (PP-HMDSO) thin films deposited on silicon wafers has been investigated as a function of both the applied RF power and the monomer flow rate. Films were deposited in a low pressure-low temperature remote plasma ignited in a 13.56 MHz hollow cathode discharge reactor, using pure HMDSO as a monomer and Ar as a feed gas. The substrate temperature during the deposition was as low as 40 °C and the total pressure was about 0.03 mbar. Optical emission spectroscopy (OES) has been used as in situ tool for monitoring the different chemical species present in the plasma during deposition processes. The deposited PP-HMDSO films showed a strong, broad 'green/yellow' PL band. The RF power and the flow rate of the HMDSO monomer are found to have a significant impact on the PL intensity of the deposited film. The changes in the chemical bonding of the film as a function of deposition parameters have been investigated by using the Fourier transform infrared (FTIR) spectroscopic analysis and are related to PL and OES results. The 'green/yellow' PL band is ascribed to chemical groups and bonds of silicon, hydrogen and/or oxygen constituting the films, in particular, SiH, SiO bonds and silanol Si-O-H groups.

  9. Photoluminescence from PP-HMDSO thin films deposited using a remote plasma of 13.56 MHz hollow cathode discharge

    Energy Technology Data Exchange (ETDEWEB)

    Naddaf, M; Saloum, S; Hamadeh, H [Department of Physics, Atomic Energy Commission of Syria (AECS), PO Box 6091, Damascus (Syrian Arab Republic)

    2007-07-07

    Room temperature photoluminescence (PL) from plasma-polymerized hexamethyldisiloxane (PP-HMDSO) thin films deposited on silicon wafers has been investigated as a function of both the applied RF power and the monomer flow rate. Films were deposited in a low pressure-low temperature remote plasma ignited in a 13.56 MHz hollow cathode discharge reactor, using pure HMDSO as a monomer and Ar as a feed gas. The substrate temperature during the deposition was as low as 40 deg. C and the total pressure was about 0.03 mbar. Optical emission spectroscopy (OES) has been used as in situ tool for monitoring the different chemical species present in the plasma during deposition processes. The deposited PP-HMDSO films showed a strong, broad 'green/yellow' PL band. The RF power and the flow rate of the HMDSO monomer are found to have a significant impact on the PL intensity of the deposited film. The changes in the chemical bonding of the film as a function of deposition parameters have been investigated by using the Fourier transform infrared (FTIR) spectroscopic analysis and are related to PL and OES results. The 'green/yellow' PL band is ascribed to chemical groups and bonds of silicon, hydrogen and/or oxygen constituting the films, in particular, SiH, SiO bonds and silanol Si-O-H groups.

  10. Photoluminescence from PP-HMDSO thin films deposited using a remote plasma of 13.56 MHz hollow cathode discharge

    International Nuclear Information System (INIS)

    Naddaf, M.; Saloum, S.; Hamadeh, H.

    2008-01-01

    Room temperature photoluminescence (PL) from plasma-polymerized hexamethyldisiloxane (PP-HMDSO) thin films deposited on silicon wafers has been investigated as a function of both the applied RF power and the monomer flow rate. Films were deposited in a low pressure-low temperature remote plasma ignited in a 13.56 MHz hollow cathode discharge reactor, using pure HMDSO as a monomer and Ar as a feed gas. The substrate temperature during the deposition was as low as 40 deg. C and the total pressure was about 0.03 mbar. Optical emission spectroscopy (OES) has been used as in situ tool for monitoring the different chemical species present in the plasma during deposition processes. The deposited PP-HMDSO films showed a strong, broad 'green/yellow' PL band. The RF power and the flow rate of the HMDSO monomer are found to have a significant impact on the PL intensity of the deposited film. The changes in the chemical bonding of the film as a function of deposition parameters have been investigated by using the Fourier transform infrared (FTIR) spectroscopic analysis and are related to PL and OES results. The 'green/yellow' PL band is ascribed to chemical groups and bonds of silicon, hydrogen and/or oxygen constituting the films, in particular, SiH, SiO bonds and silanol Si-O-H groups. (Authors)

  11. Characterization of diamond-like carbon thin film synthesized by RF atmospheric pressure plasma Ar/CH4 jet

    Science.gov (United States)

    Sohbatzadeh, Farshad; Safari, Reza; Etaati, G. Reza; Asadi, Eskandar; Mirzanejhad, Saeed; Hosseinnejad, Mohammad Taghi; Samadi, Omid; Bagheri, Hanieh

    2016-01-01

    The growth of diamond like carbon (DLC) on a Pyrex glass was investigated by a radio frequency (RF) atmospheric pressure plasma jet (APPJ). The plasma jet with capacitive configuration ran by a radio frequency power supply at 13.56 MHz. Alumina ceramic was used as dielectric barrier. Ar and CH4 were used in atmospheric pressure as carrier and precursor gases, respectively. Diamond like carbon thin films were deposited on Pyrex glass at substrate temperature and applied power of 130 °C and 250 Watts, respectively. Performing field emission scanning electron microscope (FE-SEM) and laser Raman spectroscopy analysis resulted in deposition rate and the ID/IG ratio of 21.31 nm/min and 0.47, respectively. The ID/IG ratio indicated that the coating possesses relative high sp3 content The optical emission spectroscopy (OES) diagnostic was applied to diagnose plasma jet species. Estimating electron temperature and density of the RF-APPJ resulted in 1.36 eV and 2.75 × 1014 cm-3 at the jet exit, respectively.

  12. Optical gradients in a-Si:H thin films detected using real-time spectroscopic ellipsometry with virtual interface analysis

    Science.gov (United States)

    Junda, Maxwell M.; Karki Gautam, Laxmi; Collins, Robert W.; Podraza, Nikolas J.

    2018-04-01

    Virtual interface analysis (VIA) is applied to real time spectroscopic ellipsometry measurements taken during the growth of hydrogenated amorphous silicon (a-Si:H) thin films using various hydrogen dilutions of precursor gases and on different substrates during plasma enhanced chemical vapor deposition. A procedure is developed for optimizing VIA model configurations by adjusting sampling depth into the film and the analyzed spectral range such that model fits with the lowest possible error function are achieved. The optimal VIA configurations are found to be different depending on hydrogen dilution, substrate composition, and instantaneous film thickness. A depth profile in the optical properties of the films is then extracted that results from a variation in an optical absorption broadening parameter in a parametric a-Si:H model as a function of film thickness during deposition. Previously identified relationships are used linking this broadening parameter to the overall shape of the optical properties. This parameter is observed to converge after about 2000-3000 Å of accumulated thickness in all layers, implying that similar order in the a-Si:H network can be reached after sufficient thicknesses. In the early stages of growth, however, significant variations in broadening resulting from substrate- and processing-induced order are detected and tracked as a function of bulk layer thickness yielding an optical property depth profile in the final film. The best results are achieved with the simplest film-on-substrate structures while limitations are identified in cases where films have been deposited on more complex substrate structures.

  13. An Uneven Illumination Correction Algorithm for Optical Remote Sensing Images Covered with Thin Clouds

    Directory of Open Access Journals (Sweden)

    Xiaole Shen

    2015-09-01

    Full Text Available The uneven illumination phenomenon caused by thin clouds will reduce the quality of remote sensing images, and bring adverse effects to the image interpretation. To remove the effect of thin clouds on images, an uneven illumination correction can be applied. In this paper, an effective uneven illumination correction algorithm is proposed to remove the effect of thin clouds and to restore the ground information of the optical remote sensing image. The imaging model of remote sensing images covered by thin clouds is analyzed. Due to the transmission attenuation, reflection, and scattering, the thin cloud cover usually increases region brightness and reduces saturation and contrast of the image. As a result, a wavelet domain enhancement is performed for the image in Hue-Saturation-Value (HSV color space. We use images with thin clouds in Wuhan area captured by QuickBird and ZiYuan-3 (ZY-3 satellites for experiments. Three traditional uneven illumination correction algorithms, i.e., multi-scale Retinex (MSR algorithm, homomorphic filtering (HF-based algorithm, and wavelet transform-based MASK (WT-MASK algorithm are performed for comparison. Five indicators, i.e., mean value, standard deviation, information entropy, average gradient, and hue deviation index (HDI are used to analyze the effect of the algorithms. The experimental results show that the proposed algorithm can effectively eliminate the influences of thin clouds and restore the real color of ground objects under thin clouds.

  14. Stress measurement in thin films by geometrical optics

    Science.gov (United States)

    Rossnagel, S. M.; Gilstrap, P.; Rujkorakarn, R.

    1982-01-01

    A variation of Newton's rings experiment is proposed for measuring film stress. The procedure described, the geometrical optics method, is used to measure radii of curvature for a series of film depositions with Ta, Al, and Mo films. The method has a sensitivity of 1 x 10 to the 9th dyn/sq cm, corresponding to the practical radius limit of about 50 m, and a repeatability usually within five percent. For the purposes of comparison, radii are also measured by Newton's rings method and the Talysurf method; all results are found to be in general agreement. Measurement times are also compared: the geometrical optics method requires only 1/2-1 minute. It is concluded that the geometrical optics method provides an inexpensive, fast, and a reasonably correct technique with which to measure stresses in film.

  15. Realization of first order optical systems using thin lenses

    International Nuclear Information System (INIS)

    Sudarshan, E.C.G.; Mukunda, N.; Simon, R.

    1983-09-01

    A first order optical system is investigated in full generality within the context of wave optics. We reduce the problem to a study of the ray transfer matrices. The simplest such systems correspond to axially symmetric propagation. Realization of such systems by centrally located lenses separated by finite distances is studied. It is shown that every axially symmetric first order system can be realized using at most three lenses. Among anisotropic systems it is proven that every symplectic ray transfer matrix, and no others, can be realized using lenses and free propagations. Suggestions for further study of the general first order system are outlined. 16 references

  16. Optical and Electrical Properties of Copper Oxide Thin Films Synthesized by Spray Pyrolysis Technique

    Directory of Open Access Journals (Sweden)

    S. S. Roy

    2015-08-01

    Full Text Available Copper oxide (CuO thin films have been synthesized on to glass substrates at different temperatures in the range 250-450 °C by spray pyrolysis technique from aqueous solution using cupric acetate Cu(CH3COO2·H2O as a precursor. The structure of the deposited CuO thin films characterized by X-ray diffraction, the surface morphology was observed by a scanning electron microscope, the presence of elements was detected by energy dispersive X-ray analysis, the optical transmission spectra was recorded by ultraviolet-visible spectroscopy and electrical resistivity was studied by Van-der Pauw method. All the CuO thin films, irrespective of growth temperature, showed a monoclinic structure with the main CuO (111 orientation, and the crystallite size was about 8.4784 Å for the thin film synthesized at 350 °C. The optical transmission of the as-deposited film is found to decrease with the increase of substrate temperature, the optical band gap of the thin films varies from 1.90 to 1.60 eV and the room temperature electrical resistivity varies from 30 to18 Ohm·cm for the films grown at different substrate temperatures.

  17. Structural and optical properties of DC reactive magnetron sputtered zinc aluminum oxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Kumar, B. Rajesh, E-mail: rajphyind@gmail.com [Department of Physics, GITAM Institute of Technology, GITAM University, Visakhapatnam - 530 045, A.P. (India); Rao, T. Subba, E-mail: thotasubbarao6@gmail.com [Department of Physics, Sri Krishnadevaraya University, Anantapuramu - 515 003, A.P. (India)

    2014-10-15

    Highly transparent conductive Zinc Aluminum Oxide (ZAO) thin films have been deposited on glass substrates using DC reactive magnetron sputtering method. The thin films were deposited at 200 °C and post-deposition annealing from 15 to 90 min. XRD patterns of ZAO films exhibit only (0 0 2) diffraction peak, indicating that they have c-axis preferred orientation perpendicular to the substrate. Scanning electron microscopy (SEM) is used to study the surface morphology of the films. The grain size obtained from SEM images of ZAO thin films are found to be in the range of 20 - 26 nm. The minimum resistivity of 1.74 × 10{sup −4} Ω cm and an average transmittance of 92% are obtained for the thin film post annealed for 30 min. The optical band gap of ZAO thin films increased from 3.49 to 3.60 eV with the increase of annealing time due to Burstein-Moss effect. The optical constants refractive index (n) and extinction coefficient (k) were also determined from the optical transmission spectra.

  18. Tailoring and optimization of optical properties of CdO thin films for gas sensing applications

    Science.gov (United States)

    Rajput, Jeevitesh K.; Pathak, Trilok K.; Kumar, V.; Swart, H. C.; Purohit, L. P.

    2018-04-01

    Cadmium oxide (CdO) thin films have been deposited onto glass substrates using different molar concentrations (0.2 M, 0.5 M and 0.8 M) of cadmium acetate precursor solutions using a sol-gel spin coating technique. The structural, morphological, optical and electrical results are presented. X-ray diffraction patterns indicated that the CdO films of different molarity have a stable cubic structure with a (111) preferred orientation at low molar concentration. Scanning electron microscopy images revealed that the films adopted a rectangular to cauliflower like morphology. The optical transmittance of the thin films was observed in the range 200-800 nm and it was found that the 0.2 M CdO thin films showed about 83% transmission in the visible region. The optical band gap energy of the thin films was found to vary from 2.10 to 3.30 eV with the increase in molar concentration of the solution. The electrical resistance of the 0.5 M thin film was found to be 1.56 kΩ. The oxygen sensing response was observed between 20-33% in the low temperature range (32-200 °C).

  19. Preparation, characterization and optical properties of Gadolinium doped ceria thin films by pulsed laser deposition technique

    International Nuclear Information System (INIS)

    Nagaraju, P.; Vijaya Kumar, Y.; Vishnuvardhan Reddy, C.; Ramana Reddy, M.V.; Phase, D.M; Raghavendra Reddy, V.

    2013-01-01

    The growth of Gadolinium doped ceria thin films with controlled surface structure for device quality applications presents a significant problem for experimental investigation. In the present study gadolinium doped cerium oxide thin films were prepared by pulsed laser deposition (PLD) and were studied for their surface structure evaluation in relation to the optimized operating conditions during the stage of film preparation. The deposition was made with gadolinium concentration of 10 mole% to ceria pellets. The films were deposited on quartz substrate in the presence of oxygen partial pressure of 1.5 x 10 -3 torr using KrF Excimer laser with laser energy 220 mJ at a substrate temperature 700℃. The effect of annealing temperature on 10 mole% GDC thin film was investigated. The film thickness was measured by using AMBIOS make XP-l stylus profiler. As prepared and annealed thin films were characterized for crystallinity, particle size and orientation by using G.I.XRD. The films were characterized using atomic force microscopy (AFM). The AFM results gave a consistent picture of the evolution of GDC film surface morphologies and microstructures in terms of surface roughness, grain distribution and mean grain size. The optical transmittance spectra was used to determine the optical constants such as optical band gap, refractive index, extinction coefficient of as prepared and annealed thin films. (author)

  20. Electrical and optical properties of spray - deposited CdSe thin films

    International Nuclear Information System (INIS)

    Bedir, M.; Oeztas, M.; Bakkaloglu, O. F.

    2002-01-01

    The CdSe thin films were developed by using spray-deposition technique at different substrate temperatures of 380C, 400C and, 420C on the glass substrate. All spraying processes involved CdCI 2 (0.05 moles/liter) and SeO 2 (0.05 moles/liter ) and were carried out in atmospheric condition. The CdSe thin film samples were characterized using x-ray diffractometer and optical absorption measurements. The electrical properties of the thin film samples were investigated via Wander Pauw method. XRD patterns indicated that the CdSe thin film samples have a hexagonal structure. The direct band gap of the CdSe thin film samples were determined from optical absorption and spectral response measurements of 1.76 eV. The resistivity of the CdSe thin film samples were found to vary in the range from 5.8x10''5 to 7.32x10''5 Ωcm depending to the substrate temperature

  1. Optical Analysis of Iron-Doped Lead Sulfide Thin Films for Opto-Electronic Applications

    Science.gov (United States)

    Chidambara Kumar, K. N.; Khadeer Pasha, S. K.; Deshmukh, Kalim; Chidambaram, K.; Shakil Muhammad, G.

    Iron-doped lead sulfide thin films were deposited on glass substrates using successive ionic layer adsorption and reaction method (SILAR) at room temperature. The X-ray diffraction pattern of the film shows a well formed crystalline thin film with face-centered cubic structure along the preferential orientation (1 1 1). The lattice constant is determined using Nelson Riley plots. Using X-ray broadening, the crystallite size is determined by Scherrer formula. Morphology of the thin film was studied using a scanning electron microscope. The optical properties of the film were investigated using a UV-vis spectrophotometer. We observed an increase in the optical band gap from 2.45 to 3.03eV after doping iron in the lead sulfide thin film. The cutoff wavelength lies in the visible region, and hence the grown thin films can be used for optoelectronic and sensor applications. The results from the photoluminescence study show the emission at 500-720nm. The vibrating sample magnetometer measurements confirmed that the lead sulfide thin film becomes weakly ferromagnetic material after doping with iron.

  2. Optical properties of WO3 thin films using surface plasmon resonance technique

    International Nuclear Information System (INIS)

    Paliwal, Ayushi; Sharma, Anjali; Gupta, Vinay; Tomar, Monika

    2014-01-01

    Indigenously assembled surface plasmon resonance (SPR) technique has been exploited to study the thickness dependent dielectric properties of WO 3 thin films. WO 3 thin films (80 nm to 200 nm) have been deposited onto gold (Au) coated glass prism by sputtering technique. The structural, optical properties and surface morphology of the deposited WO 3 thin films were studied using X-ray diffraction, UV-visible spectrophotometer, Raman spectroscopy, and Scanning electron microscopy (SEM). XRD analysis shows that all the deposited WO 3 thin films are exhibiting preferred (020) orientation and Raman data indicates that the films possess single phase monoclinic structure. SEM images reveal the variation in grain size with increase in thickness. The SPR reflectance curves of the WO 3 /Au/prism structure were utilized to estimate the dielectric properties of WO 3 thin films at optical frequency (λ = 633 nm). As the thickness of WO 3 thin film increases from 80 nm to 200 nm, the dielectric constant is seen to be decreasing from 5.76 to 3.42, while the dielectric loss reduces from 0.098 to 0.01. The estimated value of refractive index of WO 3 film is in agreement to that obtained from UV-visible spectroscopy studies. The strong dispersion in refractive index is observed with wavelength of incident laser light

  3. Optical properties of the c-axis oriented LiNbO{sub 3} thin film

    Energy Technology Data Exchange (ETDEWEB)

    Shandilya, Swati; Sharma, Anjali [Department of Physics and Astrophysics, University of Delhi, Delhi-110007 (India); Tomar, Monika [Miranda House, University of Delhi, Delhi 110007 (India); Gupta, Vinay, E-mail: drguptavinay@gmail.com [Department of Physics and Astrophysics, University of Delhi, Delhi-110007 (India)

    2012-01-01

    C-axis oriented Lithium Niobate (LiNbO{sub 3}) thin films have been deposited onto epitaxially matched (001) sapphire substrate using pulsed laser deposition technique. Structural and optical properties of the thin films have been studied using the X-ray diffraction (XRD) and UV-Visible spectroscopy respectively. Raman spectroscopy has been used to study the optical phonon modes and defects in the c-axis oriented LiNbO{sub 3} thin films. XRD analysis indicates the presence of stress in the as-grown LiNbO{sub 3} thin films and is attributed to the small lattice mismatch between LiNbO{sub 3} and sapphire. Refractive index (n = 2.13 at 640 nm) of the (006) LiNbO{sub 3} thin films was found to be slightly lower from the corresponding bulk value (n = 2.28). Various factors responsible for the deviation in the refractive index of (006) LiNbO{sub 3} thin films from the corresponding bulk value are discussed and the deviation is mainly attributed to the lattice contraction due to the presence of stress in deposited film.

  4. Optical properties of WO{sub 3} thin films using surface plasmon resonance technique

    Energy Technology Data Exchange (ETDEWEB)

    Paliwal, Ayushi; Sharma, Anjali; Gupta, Vinay, E-mail: drguptavinay@gmail.com, E-mail: vgupta@physics.du.ac.in [Department of Physics and Astrophysics, University of Delhi, Delhi 110007 (India); Tomar, Monika [Department of Physics, Miranda House, University of Delhi, Delhi 110007 (India)

    2014-01-28

    Indigenously assembled surface plasmon resonance (SPR) technique has been exploited to study the thickness dependent dielectric properties of WO{sub 3} thin films. WO{sub 3} thin films (80 nm to 200 nm) have been deposited onto gold (Au) coated glass prism by sputtering technique. The structural, optical properties and surface morphology of the deposited WO{sub 3} thin films were studied using X-ray diffraction, UV-visible spectrophotometer, Raman spectroscopy, and Scanning electron microscopy (SEM). XRD analysis shows that all the deposited WO{sub 3} thin films are exhibiting preferred (020) orientation and Raman data indicates that the films possess single phase monoclinic structure. SEM images reveal the variation in grain size with increase in thickness. The SPR reflectance curves of the WO{sub 3}/Au/prism structure were utilized to estimate the dielectric properties of WO{sub 3} thin films at optical frequency (λ = 633 nm). As the thickness of WO{sub 3} thin film increases from 80 nm to 200 nm, the dielectric constant is seen to be decreasing from 5.76 to 3.42, while the dielectric loss reduces from 0.098 to 0.01. The estimated value of refractive index of WO{sub 3} film is in agreement to that obtained from UV-visible spectroscopy studies. The strong dispersion in refractive index is observed with wavelength of incident laser light.

  5. Optical properties of the c-axis oriented LiNbO3 thin film

    International Nuclear Information System (INIS)

    Shandilya, Swati; Sharma, Anjali; Tomar, Monika; Gupta, Vinay

    2012-01-01

    C-axis oriented Lithium Niobate (LiNbO 3 ) thin films have been deposited onto epitaxially matched (001) sapphire substrate using pulsed laser deposition technique. Structural and optical properties of the thin films have been studied using the X-ray diffraction (XRD) and UV–Visible spectroscopy respectively. Raman spectroscopy has been used to study the optical phonon modes and defects in the c-axis oriented LiNbO 3 thin films. XRD analysis indicates the presence of stress in the as-grown LiNbO 3 thin films and is attributed to the small lattice mismatch between LiNbO 3 and sapphire. Refractive index (n = 2.13 at 640 nm) of the (006) LiNbO 3 thin films was found to be slightly lower from the corresponding bulk value (n = 2.28). Various factors responsible for the deviation in the refractive index of (006) LiNbO 3 thin films from the corresponding bulk value are discussed and the deviation is mainly attributed to the lattice contraction due to the presence of stress in deposited film.

  6. WO.sub.3./sub. thin films prepared by sedimentation and plasma sputtering

    Czech Academy of Sciences Publication Activity Database

    Olejníček, Jiří; Brunclíková, Michaela; Kment, Š.; Hubička, Zdeněk; Kmentová, N.; Kšírová, Petra; Čada, Martin; Zlámal, M.; Krýsa, J.

    2017-01-01

    Roč. 318, Jun (2017), s. 281-288 ISSN 1385-8947 R&D Projects: GA TA ČR(CZ) TF01000084; GA ČR(CZ) GA15-00863S; GA TA ČR TA03010743; GA ČR GAP108/12/2104 Institutional support: RVO:68378271 Keywords : WO 3 * thin films * water splitting * pulsed magnetron sputtering * sedimentation * photo-electro-chemistry Subject RIV: BL - Plasma and Gas Discharge Physics OBOR OECD: Fluids and plasma physics (including surface physics) Impact factor: 6.216, year: 2016

  7. Dry etching of LaNiO3 thin films using inductively coupled plasma

    International Nuclear Information System (INIS)

    Kim, Gwan-Ha; Kim, Dong-Pyo; Kim, Kyoung-Tae; Kim, Chang-Il; Lee, Cheol-In; Kim, Tae-Hyung

    2006-01-01

    The etching characteristics of LaNiO 3 (LNO) thin films and SiO 2 in Cl 2 /Ar plasma were investigated. LNO etch rates decreased with increasing Cl 2 fraction in Ar plasma and the working pressure. Langmuir probe measurement showed a noticeable influence of Cl 2 /Ar mixing ratio on electron temperature, electron density, and ion current density. The modeling of volume kinetics for charged particles and OES measurements for neutral atoms indicated monotonous changes of both densities and fluxes of active species such as chlorine atoms and positive ions. The LNO etch rate behavior may be explained by physical mechanisms

  8. Structural, optical and electrical properties of ZnO thin films prepared ...

    Indian Academy of Sciences (India)

    Administrator

    of zinc acetate on glass substrates at 450 °C. Effect of precursor concentration on structural and optical pro- perties has ... dependence of photoresponse properties of sprayed ZnO thin films on ... randomly oriented flake-like grains. The grains ...

  9. Optical approach to thermopower and conductivity measurements in thin-film semiconductors

    International Nuclear Information System (INIS)

    Dersch, H.; Amer, N.M.

    1984-01-01

    An optical beam deflection technique is applied to measure the Joule and Peltier heat generated by electric currents through thin-film semiconductors. The method yields a spatially resolved conductivity profile and allows the determination of Peltier coefficients. Results obtained on doped hydrogenated amorphous silicon films are presented

  10. Determination of the optical parameters of a-Si:H thin films ...

    Indian Academy of Sciences (India)

    single-effective oscillator model to the a-Si:H samples to calculate the optical ..... et al [23] and have similar trend as those shown by El-Sayed and Amin [24]. .... [3] K L Chopra, Thin film phenomena (McGraw-Hill Book Company, USA, 1969).

  11. Multichannel all–optical switch based on a thin slab of resonant two–level emitters

    Directory of Open Access Journals (Sweden)

    Malikov Ramil

    2017-01-01

    Full Text Available We discuss the possibility of using a thin layer of inhomogeneously broadened resonant emitters as a multichannel all–optical switch. Switching time from the lower stable branch of the system's bistable characteristics to the upper one and vice versa, which determines the speed of operation of a bistable device, is studied.

  12. Optical anisotropy, molecular orientations, and internal stresses in thin sulfonated poly(ether ether ketone) films

    NARCIS (Netherlands)

    Koziara, B.T.; Nijmeijer, K.; Benes, N.E.

    2015-01-01

    The thickness, the refractive index, and the optical anisotropy of thin sulfonated poly(ether ether ketone) films, prepared by spin-coating or solvent deposition, have been investigated with spectroscopic ellipsometry. For not too high polymer concentrations (≤5 wt%) and not too low spin speeds

  13. Optical anisotropy, molecular orientations, and internal stresses in thin sulfonated poly(ether ether ketone) films

    NARCIS (Netherlands)

    Koziara, Beata; Nijmeijer, Dorothea C.; Benes, Nieck Edwin

    2015-01-01

    The thickness, the refractive index, and the optical anisotropy of thin sulfonated poly(ether ether ketone) films, prepared by spin-coating or solvent deposition, have been investigated with spectroscopic ellipsometry. For not too high polymer concentrations (B5 wt%) and not too low spin speeds

  14. Effect of the thin-film limit on the measurable optical properties of graphene

    Czech Academy of Sciences Publication Activity Database

    Holovský, Jakub; Nicolay, S.; De Wolf, S.; Ballif, C.

    2015-01-01

    Roč. 5, Oct (2015), s. 15684 ISSN 2045-2322 R&D Projects: GA ČR(CZ) GA14-05053S Institutional support: RVO:68378271 Keywords : graphene * thin-film limit Subject RIV: BH - Optics, Masers, Lasers Impact factor: 5.228, year: 2015

  15. Tailoring the optical properties of amorphous heavily Er3+-doped Ge-Ga-S thin films

    Czech Academy of Sciences Publication Activity Database

    Reddy, N.K.; Devika, M.; Prashantha, M.; Rames, K.; Ivanova, Z.G.; Zavadil, Jiří

    2013-01-01

    Roč. 15, 3-4 (2013), s. 182-186 ISSN 1454-4164 R&D Projects: GA ČR GAP106/12/2384 Institutional support: RVO:67985882 Keywords : Chalcogenide thin films * Optical properties * Photoinduced changes Subject RIV: JA - Electronics ; Optoelectronics , Electrical Engineering Impact factor: 0.563, year: 2013

  16. Optically transparent super-hydrophobic thin film fabricated by reusable polyurethane-acrylate (PUA) mold

    Science.gov (United States)

    Park, J.-S.; Park, J.-H.; Lee, D.-W.

    2018-02-01

    In this paper, we describe a simple manufacturing method for producing an optically transparent super-hydrophobic polymer thin film using a reusable photo-curable polymer mold. Soluble photoresist (PR) molds were prepared with under-exposed and under-baked processes, which created unique hierarchical micro/nano structures. The reverse phase of the PR mold was replicated on the surface of polydimethylsiloxane (PDMS) substrates. The unique patterns on the replicated PDMS molds were successfully transferred back to the UV curable polyurethane-acrylate (PUA) using a laboratory-made UV exposure system. Continuous production of the super-hydrophobic PDMS thin film was demonstrated using the reusable PUA mold. In addition, hydrophobic nano-silica powder was sprayed onto the micro/nano structured PDMS surfaces to further improve hydrophobicity. The fabricated PDMS thin films with hierarchical surface texturing showed a water contact angle  ⩾150°. Excellent optical transmittance within the range of visible light of wavelengths between 400-800 nm was experimentally confirmed using a spectrophotometer. High efficiency of the super-hydrophobic PDMS film in optical transparency was also confirmed using solar panels. The fabricated PUA molds are very suitable for use in roll-to-roll or roll-to-plate systems which allow continuous production of super-hydrophobic thin films with an excellent optical transparency.

  17. Optical and structural behaviors of crosslinked polyvinyl alcohol thin films

    Science.gov (United States)

    Pandit, Subhankar; Kundu, Sarathi

    2018-04-01

    Polyvinyl Alcohol (PVA) has excellent properties like uniaxial tensile stress, chemical resistance, biocompatibility, etc. The properties of PVA further can be tuned by crosslinking process. In this work, a simple heat treatment method is used to find out the optimum crosslinking of PVA and the corresponding structural and optical responses are explored. The PVA crosslinking is done by exposing the films at different temperatures and time intervals. The optical property of pure and heat treated PVA films are investigated by UV-Vis absorption and photoluminescence emission spectroscopy and structural modifications are studied by Fourier Transform Infrared Spectroscopy (FTIR). The absorption peaks of pure PVA are observed at ≈ 280 and 335 nm and the corresponding emission is observed at ≈ 424 nm. The pure PVA showed modified optical behaviors after the heat treatment. In addition, dipping the PVA films in hot water (85°C) for nearly 20 minutes also show impact on both structural and optical properties. From FTIR spectroscopy, the changes in vibrational band positions confirm the structural modifications of PVA films.

  18. Optical characteristics of thin CIGS cells on TCO back contact

    NARCIS (Netherlands)

    Deelen, J. van; Kniknie, B.; Vroon, Z.A.E.P.; Wuerz, R.; Kessler, F.

    2014-01-01

    Reduction of CIGS layer thickness could translate in significant cost reduction. CIGS was made on transparent conductive oxide (TCO) to allow for optical characterization. This data was compared with external quantum efficiency (EQE) data. The results suggest that changes in surface morphology are

  19. Electrical and optical properties of zinc oxide: thin films

    International Nuclear Information System (INIS)

    Zuhairusnizam Md Darus; Abdul Jalil Yeop Majlis; Anis Faridah Md Nor; Burhanuddin Kamaluddin

    1992-01-01

    Zinc oxide films have been prepared by high temperature oxidation of thermally evaporated zinc films on glass substrates. The resulting films are characterized using X-ray diffraction, optical absorption and electrical conductivity measurements. These zinc oxide films are very transparent and photoconductive

  20. Ultrafast electron diffraction studies of optically excited thin bismuth films

    International Nuclear Information System (INIS)

    Rajkovic, Ivan

    2008-01-01

    This thesis contains work on the design and the realization of an experimental setup capable of providing sub-picosecond electron pulses for ultrafast electron diffraction experiments, and performing the study of ultrafast dynamics in bismuth after optical excitation using this setup. (orig.)

  1. Ultrafast electron diffraction studies of optically excited thin bismuth films

    Energy Technology Data Exchange (ETDEWEB)

    Rajkovic, Ivan

    2008-10-21

    This thesis contains work on the design and the realization of an experimental setup capable of providing sub-picosecond electron pulses for ultrafast electron diffraction experiments, and performing the study of ultrafast dynamics in bismuth after optical excitation using this setup. (orig.)

  2. Optical characteristics of transparent samarium oxide thin films ...

    Indian Academy of Sciences (India)

    2016-10-07

    Oct 7, 2016 ... The estimated direct optical band gap energy (Ed g) values were found to ... rpm substrate rotation and power of 150 W. The rate of deposition was 2 .... tion by annealing is due to the generation of oxygen vacancies due to ...

  3. Optical properties of vacuum deposited polyaniline ultra-thin film

    International Nuclear Information System (INIS)

    Wahab, M. R. A.; Din, M.; Yunus, W. M. M.; Hasan, Z. A.; Kasim, A.

    2005-01-01

    Full text: Ultra-thin films of emeraldine base (EB) and emeraldine salt (ES) form of polyaniline (PANi) were prepared using electron-gun vacuum deposition. Thickness range studied was between 100AA and 450AA. Dielectric permittivity of the films determined from Kretchmann Configuration Surface Plasmon Resonance (SPR) angles-scanning set-up show shifts and narrowing of the SPR dip. Absorbance spectra of S-polarized and P-polarized light show the aging effect on orientation of the film. The effect of aging on its conductivity and photoluminescence is also correlated to the surface morphology

  4. Optical and morphological characterization of bispyrazole thin films for gas sensing applications

    Directory of Open Access Journals (Sweden)

    Rachid Touzani

    2014-11-01

    Full Text Available The optical gas recognition capabilities of thin film layer of 4-[bis[(3,5-dimethyl-1H-pyrazol-1-ylmethyl]-amino]phenol deposed on quartz substrates were studied. The dynamic gas responses to the following analytes have been investigated as air pollutants (SO2, NO2, CO, CH4 and NH3. The spin-coated bispyrazole layer appears to have reversible response towards SO2 and a very low and irreversible response to NO2. The selectivity of the thin film based on bispyrazole layer with respect to other analytes was also examined and the present data show that the thin sensing layer in the presence of CO, CH4 and NH3 in low concentration does not influence its optical properties.

  5. Experimental and theoretical investigations of structural and optical properties of CIGS thin films

    Energy Technology Data Exchange (ETDEWEB)

    Chandramohan, M., E-mail: chandramohan59@yahoo.co.in [Department of Physics, Park college of Engineering and Tecknology, Coimbatore-641 659 (India); Velumani, S., E-mail: vels64@yahoo.com [Centro de Investigacion y de Estudios Avanzados del I.P.N.(CINVESTAV), Av. Instituto Politecnico Nacional 2508 Col. San Pedro Zacatenco 07360, Mexico D.F (Mexico); Venkatachalam, T., E-mail: atvenkatachalam@yahoo.com [Department of Physics, Coimbatore Institute of Technology, Coimbatore-14. India (India)

    2010-10-25

    Experimental and theoretical studies of the structural and optical properties of Copper Indium Gallium diSelenide thin films have been performed. Thin films of CIGS were deposited on glass substrates by chemical bath deposition. From the XRD results of the films, it is found that the films are of chalcopyrite type structure. The lattice parameter were determined as a = 5.72 A and c = 11.462 A. The optical properties of the thin films were carried out with the help of spectrophotometer. First principles density functional theory calculations of the band structure, density of states and effective masses of electrons and holes of the CIGS crystals have been done by computer simulations. The experimental data and theoretically calculated data have demonstrated good agreement.

  6. Investigations of electrical and optical properties of functional TCO thin films

    Directory of Open Access Journals (Sweden)

    Domaradzki Jarosław

    2015-06-01

    Full Text Available Transparent conducting oxide (TCO films of indium-tin-oxide were evaporated on the surface of silicon wafers after phosphorous diffusion and on the reference glass substrates. The influence of deposition process parameters (electron beam current, oxygen flow and the substrate temperature on optical and electrical properties of evaporated thin films were investigated by means of resistivity measurements and optical spectrophotometry. The performance of prepared thin films was judged by calculated figure of merit and the best result was obtained for the sample deposited on the substrate heated to the 100 °C and then removed from the deposition chamber and annealed in an air for 5 minutes at 400 °C. Refractive index and extinction coefficient were evaluated based on measured transmission spectra and used for designing of antireflection coating for solar cell. The obtained results showed that prepared TCO thin films are promising as a part of counter electrode in crystalline silicon solar cell construction.

  7. Optical properties of n-CdSe sub 1-x Te sub x polycrystalline thin films

    Energy Technology Data Exchange (ETDEWEB)

    Gutierrez, M T [Centro de Investigaciones Energeticas, Medioambientales y Tecnologicas, Madrid (Spain). Inst. de Energias Renovables

    1991-01-01

    Absorption coefficient, {alpha}({lambda}), and energy gap, E{sub g}, of CdSe{sub 1-x}Te{sub x} thin films were determined from the measured transmittance and reflectance at normal incidence of light in the wavelength range 450-2500 nm. The thin film were electrochemically prepared on glass plates coated with conducting thin films of SnO{sub 2}. A combined method from Goodman and Lubberts was used to determine the absorption coefficient and its dependence on the wavelength. The evolution of the optical gap versus the composition of Te in CdSe{sub 1-x}Te{sub x} was made and a value of 1.4 eV of the optical gap was obtained for the composition of CdSe{sub 0.65}Te{sub 0.35}. (orig.).

  8. Application of Thinned-Skull Cranial Window to Mouse Cerebral Blood Flow Imaging Using Optical Microangiography

    Science.gov (United States)

    Wang, Ruikang K.

    2014-01-01

    In vivo imaging of mouse brain vasculature typically requires applying skull window opening techniques: open-skull cranial window or thinned-skull cranial window. We report non-invasive 3D in vivo cerebral blood flow imaging of C57/BL mouse by the use of ultra-high sensitive optical microangiography (UHS-OMAG) and Doppler optical microangiography (DOMAG) techniques to evaluate two cranial window types based on their procedures and ability to visualize surface pial vessel dynamics. Application of the thinned-skull technique is found to be effective in achieving high quality images for pial vessels for short-term imaging, and has advantages over the open-skull technique in available imaging area, surgical efficiency, and cerebral environment preservation. In summary, thinned-skull cranial window serves as a promising tool in studying hemodynamics in pial microvasculature using OMAG or other OCT blood flow imaging modalities. PMID:25426632

  9. Optimized plasma-deposited fluorocarbon coating for dry release and passivation of thin SU-8 cantilevers

    DEFF Research Database (Denmark)

    Keller, Stephan Urs; Häfliger, Daniel; Boisen, Anja

    2008-01-01

    during fluorocarbon deposition, the surface free energy of the coating can be tuned to allow for uniform wetting during spin coating of arbitrary thin SU-8 films. Further, they define an optimal pressure regime for the release of thin polymer structures at high yield. They demonstrate the successful......Plasma-deposited fluorocarbon coatings are introduced as a convenient method for the dry release of polymer structures. In this method, the passivation process in a deep reactive ion etch reactor was used to deposit hydrophobic fluorocarbon films. Standard photolithography with the negative epoxy......-based photoresist SU-8 was used to fabricate polymer structures such as cantilevers and membranes on top of the nonadhesive release layer. The authors identify the plasma density as the main parameter determining the surface properties of the deposited fluorocarbon films. They show that by modifying the pressure...

  10. Thinning and functionalization of few-layer graphene sheets by CF4 plasma treatment

    KAUST Repository

    Shen, Chao

    2012-05-24

    Structural changes of few-layer graphene sheets induced by CF4 plasma treatment are studied by optical microscopy and Raman spectroscopy, together with theoretical simulation. Experimental results suggest a thickness reduction of few-layer graphene sheets subjected to prolonged CF4 plasma treatment while plasma treatment with short time only leads to fluorine functionalization on the surface layer by formation of covalent bonds. Raman spectra reveal an increase in disorder by physical disruption of the graphene lattice as well as functionalization during the plasma treatment. The F/CF3 adsorption and the lattice distortion produced are proved by theoretical simulation using density functional theory, which also predicts p-type doping and Dirac cone splitting in CF4 plasma-treated graphene sheets that may have potential in future graphene-based micro/nanodevices.

  11. Extraction of optical parameters of thin films from spectral measurements for design and optical performance of multilayer structures

    International Nuclear Information System (INIS)

    Muellerova, J.; Jurecka, S.; Kucerova, A.

    2003-01-01

    Optical parameters of a-Si:H and indium tin oxide (ITO) thin films deposited on glass substrates are determined from spectral measurements of reflectance and/or transmittance. It is shown how important the exact knowledge of optical parameters as well as thicknesses of the layers for the design and the optical performance of multilayer structures is. The model of the p-i-n based a:Si-H solar cell with ITO as transparent conductive oxide layer is used for illustrating. The modeling of the solar cell integral reflectance in the spectral region of (650-830) nm is used as a criterion to reverse engineering of a multilayer structure with suppressed reflectance losses. The reflectance of a solar cell is modelled and the simulation of the varying optical parameters of individual layers including their thicknesses is discussed. Besides this,the advantage of using an antireflective layer under ITO is discussed (Authors)

  12. Studies on nonlocal optical nonlinearity of Sr–CuO–polyvinyl alcohol nanocomposite thin films

    International Nuclear Information System (INIS)

    Tamgadge, Y.S.; Talwatkar, S.S.; Sunatkari, A.L.; Pahurkar, V.G.; Muley, G.G.

    2015-01-01

    Thermally induced nonlocal nonlinear optical properties of strontium (Sr) doped CuO-polyvinyl alcohol (PVA) nanocomposite thin films under continuous wave Helium–Neon laser illumination are investigated by single beam Z-scan method. Undoped and Sr doped CuO nanoparticles (NPs) using L-arginine as surface modifying agent have been synthesized by wet chemical method and their thin films with PVA as host matrix have been obtained by spin coating technique. Structure, morphology and purity of prepared CuO NPs and thin films have been studied by X-ray diffraction, high-resolution transmission electron microscopy, field emission scanning electron microscopy and energy dispersive X-ray absorption spectroscopy. Fourier transform infra-red spectrum attests the role of L-arginine as surface modifier and ultraviolet–visible absorption studies reveal that the excitonic absorption wavelengths are blue shifted for strontium doped CuO NPs. Sr doped CuO NPs with average particle size of 7 nm and calculated optical band gap up to 2.54 eV have been reported. All Sr doped CuO–PVA nanocomposite thin films show enhanced nonlinear refraction and absorption best suited for optical limiting applications. Observed effects have been attributed to thermal lensing effect. - Highlights: • Pure and strontium doped CuO–polyvinyl alcohol nanocomposite thin films are prepared. • Z-scan studies of thin films are performed under continuous wave helium–neon laser. • Enhanced values of third order nonlinear optical coefficients are obtained for all films. • Thermally induced self-defocusing and reverse saturable absorption have been discussed.

  13. Studies on nonlocal optical nonlinearity of Sr–CuO–polyvinyl alcohol nanocomposite thin films

    Energy Technology Data Exchange (ETDEWEB)

    Tamgadge, Y.S. [Department of Physics, Mahatma Fule Arts, Commerce and S C Science Mahavidyalaya, Warud, Dist. Amravati (MS), 444906 (India); Talwatkar, S.S. [Department of Physics, D K Marathe and N G Acharya College, Chembur, Mumbai (MS) 440071 (India); Sunatkari, A.L. [Department of Physics, Siddharth College of Arts, Science and Commerce, Fort, Mumbai (MS) 440001 (India); Pahurkar, V.G. [Department of Physics, Sant Gadge Baba Amravati University, Amravati (MS), 444602 (India); Muley, G.G., E-mail: gajananggm@yahoo.co.in [Department of Physics, Sant Gadge Baba Amravati University, Amravati (MS), 444602 (India)

    2015-11-30

    Thermally induced nonlocal nonlinear optical properties of strontium (Sr) doped CuO-polyvinyl alcohol (PVA) nanocomposite thin films under continuous wave Helium–Neon laser illumination are investigated by single beam Z-scan method. Undoped and Sr doped CuO nanoparticles (NPs) using L-arginine as surface modifying agent have been synthesized by wet chemical method and their thin films with PVA as host matrix have been obtained by spin coating technique. Structure, morphology and purity of prepared CuO NPs and thin films have been studied by X-ray diffraction, high-resolution transmission electron microscopy, field emission scanning electron microscopy and energy dispersive X-ray absorption spectroscopy. Fourier transform infra-red spectrum attests the role of L-arginine as surface modifier and ultraviolet–visible absorption studies reveal that the excitonic absorption wavelengths are blue shifted for strontium doped CuO NPs. Sr doped CuO NPs with average particle size of 7 nm and calculated optical band gap up to 2.54 eV have been reported. All Sr doped CuO–PVA nanocomposite thin films show enhanced nonlinear refraction and absorption best suited for optical limiting applications. Observed effects have been attributed to thermal lensing effect. - Highlights: • Pure and strontium doped CuO–polyvinyl alcohol nanocomposite thin films are prepared. • Z-scan studies of thin films are performed under continuous wave helium–neon laser. • Enhanced values of third order nonlinear optical coefficients are obtained for all films. • Thermally induced self-defocusing and reverse saturable absorption have been discussed.

  14. Miniature pulsed vacuum arc plasma gun and apparatus for thin-film fabrication

    Science.gov (United States)

    Brown, Ian G.; MacGill, Robert A.; Galvin, James E.; Ogletree, David F.; Salmeron, Miquel

    1998-01-01

    A miniature (dime-size in cross-section) vapor vacuum arc plasma gun is described for use in an apparatus to produce thin films. Any conductive material can be layered as a film on virtually any substrate. Because the entire apparatus can easily be contained in a small vacuum chamber, multiple dissimilar layers can be applied without risk of additional contamination. The invention has special applications in semiconductor manufacturing.

  15. Deposition of Polymer Thin Films on ZnO Nanoparticles by a Plasma Treatment

    Science.gov (United States)

    2001-11-01

    exchange for removing metal ions frori water. If on the surface of these nanoparticles, an extremely thin layer of polyacrylic filr can be coated by a...plasma treatment. The polyacrylic film will react with metallic ions in water. As a result of the high surface-to-volume ratio of these narioparticles, the...experiments performed on a JEM 2010F. In FFIR experiment, potassium bromide(KBr) of 99%+ purity was obtained from Aldrich Chemical Company Inc

  16. Analysis of annealed thin polymer films prepared from dichloro(methyl)phenylsilane by plasma polymerization

    Czech Academy of Sciences Publication Activity Database

    Cech, V.; Horvath, P.; Trchová, M.; Zemek, Josef; Matějková, Jiřina

    2001-01-01

    Roč. 82, - (2001), s. 2106-2112 ISSN 0021-8995 R&D Projects: GA ČR GV106/98/K013; GA ČR GA104/00/0708 Institutional research plan: CEZ:AV0Z1010914 Keywords : plasma polymerization * thin films * thermogravimetric analysis ( TSA ) * FTIR * ESCA/XPS Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 0.992, year: 2001

  17. Structural, morphological and optical properties of Na and K dual doped CdS thin film

    International Nuclear Information System (INIS)

    Mageswari, S.; Dhivya, L.; Palanivel, Balan; Murugan, Ramaswamy

    2012-01-01

    Highlights: ► Effect of incorporation of Na, K and Na,K dual dopants into CdS thin film was investigated. ► Thin films were prepared by simple chemical bath deposition technique. ► The XRD analysis revealed cubic phase for all the investigated films. ► AFM analysis revealed uniform surface with crack free and densely packed morphology for CdS:Na,K film. ► The band gap value increases for CdS:Na, CdS:K and CdS:Na,K thin films compared to CdS film. - Abstract: CdS, sodium doped CdS (CdS:Na), potassium doped CdS (CdS:K) and sodium and potassium dual doped CdS (CdS:Na,K) thin films were deposited on glass substrate by chemical bath deposition (CBD) technique. Structural, morphological and optical properties of the as-grown films were characterised using X-ray diffraction (XRD), scanning electron microscopy (SEM), energy dispersive X-ray analysis (EDAX), atomic force microscopy (AFM) and ultraviolet visible (UV–VIS) spectroscopy. The XRD analysis revealed cubic phase for ‘as-deposited’ CdS, CdS:Na, CdS:K and CdS:Na,K dual doped thin films. AFM analysis revealed uniform film surface with crack free and densely packed morphology for CdS:Na,K film. The absorption edge in the optical absorption spectra shifts towards the shorter wavelength for CdS:Na, CdS:K and CdS:Na,K thin films compared to CdS film. The optical band gap of CdS, CdS:Na, CdS:K and CdS:Na,K thin films was found to be 2.31, 2.35, 2.38 and 2.34 eV, respectively.

  18. Investigation of the optical properties of MoS{sub 2} thin films using spectroscopic ellipsometry

    Energy Technology Data Exchange (ETDEWEB)

    Yim, Chanyoung; O' Brien, Maria; Winters, Sinéad [School of Chemistry, Trinity College Dublin, Dublin 2 (Ireland); Centre for Research on Adaptive Nanostructures and Nanodevices (CRANN), Trinity College Dublin, Dublin 2 (Ireland); McEvoy, Niall [Centre for Research on Adaptive Nanostructures and Nanodevices (CRANN), Trinity College Dublin, Dublin 2 (Ireland); Mirza, Inam; Lunney, James G. [Centre for Research on Adaptive Nanostructures and Nanodevices (CRANN), Trinity College Dublin, Dublin 2 (Ireland); School of Physics, Trinity College Dublin, Dublin 2 (Ireland); Duesberg, Georg S., E-mail: duesberg@tcd.ie [School of Chemistry, Trinity College Dublin, Dublin 2 (Ireland); Centre for Research on Adaptive Nanostructures and Nanodevices (CRANN), Trinity College Dublin, Dublin 2 (Ireland); Advanced Materials and BioEngineering Research (AMBER) Centre, Trinity College Dublin, Dublin 2 (Ireland)

    2014-03-10

    Spectroscopic ellipsometry (SE) characterization of layered transition metal dichalcogenide (TMD) thin films grown by vapor phase sulfurization is reported. By developing an optical dispersion model, the extinction coefficient and refractive index, as well as the thickness of molybdenum disulfide (MoS{sub 2}) films, were extracted. In addition, the optical band gap was obtained from SE and showed a clear dependence on the MoS{sub 2} film thickness, with thinner films having a larger band gap energy. These results are consistent with theory and observations made on MoS{sub 2} flakes prepared by exfoliation, showing the viability of vapor phase derived TMDs for optical applications.

  19. Investigation of the optical properties of MoS2 thin films using spectroscopic ellipsometry

    International Nuclear Information System (INIS)

    Yim, Chanyoung; O'Brien, Maria; Winters, Sinéad; McEvoy, Niall; Mirza, Inam; Lunney, James G.; Duesberg, Georg S.

    2014-01-01

    Spectroscopic ellipsometry (SE) characterization of layered transition metal dichalcogenide (TMD) thin films grown by vapor phase sulfurization is reported. By developing an optical dispersion model, the extinction coefficient and refractive index, as well as the thickness of molybdenum disulfide (MoS 2 ) films, were extracted. In addition, the optical band gap was obtained from SE and showed a clear dependence on the MoS 2 film thickness, with thinner films having a larger band gap energy. These results are consistent with theory and observations made on MoS 2 flakes prepared by exfoliation, showing the viability of vapor phase derived TMDs for optical applications

  20. Magnetic and magneto-optical properties of FeRh thin films

    International Nuclear Information System (INIS)

    Inoue, Sho; Nam, Nguyen T.; Phuoc, Nguyen N.; Cao Jiangwei; Yu Ko, Hnin Yu; Suzuki, Takao

    2008-01-01

    The magnetic and magneto-optical properties of FeRh thin films epitaxially deposited onto MgO(1 0 0) substrates by RF sputter-deposition system have been investigated in conjunction with the structure. An intriguing virgin effect has been found in the M-T curves of the as-deposited FeRh thin films, which is presumably interpreted in term of a change in structural phase when heating. Also, a (negative) maximum peak of Kerr rotation at around 3.8 eV has been observed when FeRh thin films are in ferromagnetic state. The polar Kerr rotation angle is found to increase at temperatures above 100 deg. C, which corresponds to the antiferromagnet (AF)-ferromagnet (FM) transition of FeRh thin films

  1. Improved electrochemical performances of oxygen plasma treated LiMn2O4 thin films

    International Nuclear Information System (INIS)

    Chen, C C; Chiu, K-F; Lin, K M; Lin, H C; Yang, C-R; Wang, F M

    2007-01-01

    LiMn 2 O 4 spinel thin films were deposited by radio frequency (rf) magnetron sputtering followed by annealing at 600 0 C in air.The films were then post-treated with an rf driven oxygen plasma. The crystallization and surface morphology of LiMn 2 O 4 thin films were seen to change with rf power. The treated samples were tested under harsh conditions such as deep discharge to 1.5 V and cycling at elevated temperature of 60 0 C to verify the electrochemical performances of LiMn 2 O 4 cathodes. The oxygen plasma treatments improved the electrochemical properties of LiMn 2 O 4 thin films significantly. As the cells were cycled in the range of 4.5-2.0 V at 60 0 C, the samples treated at a proper rf power of 50 W exhibited an initial capacity greater than ∼400 mAh g -1 with reasonable cycling stability. The results were attributed to the change of morphology and the formation of a surface layer induced by the oxygen plasma irradiation

  2. Hybrid formulation of radiation transport in optically thick divertor plasmas

    Energy Technology Data Exchange (ETDEWEB)

    Rosato, J.; Marandet, Y.; Bufferand, H.; Stamm, R. [PIIM, UMR 7345 Aix-Marseille Universite / CNRS, Centre de St-Jerome, Marseille (France); Reiter, D. [IEK-4 Plasmaphysik, Forschungszentrum Juelich GmbH, Juelich (Germany)

    2016-08-15

    Kinetic Monte Carlo simulations of coupled atom-radiation transport in optically thick divertor plasmas can be computationally very demanding, in particular in ITER relevant conditions or even larger devices, e.g. for power plant divertor studies. At high (∝ 10{sup 15} cm{sup -3}) atomic densities, it can be shown that sufficiently large divertors behave in certain areas like a black body near the first resonance line of hydrogen (Lyman α). This suggests that, at least in part, the use of continuum model (radiation hydrodynamics) can be sufficiently accurate, while being less time consuming. In this work, we report on the development of a hybrid model devoted to switch automatically between a kinetic and a continuum description according to the plasma conditions. Calculations of the photo-excitation rate in a homogeneous slab are performed as an illustration. The outlined hybrid concept might be also applicable to neutral atom transport, due to mathematical analogy of transport equations for neutrals and radiation. (copyright 2016 The Authors. Contributions to Plasma Physics published by Wiley-VCH Verlag GmbH and Co. KGaA Weinheim. This)

  3. Optically-ionized plasma recombination x-ray lasers

    International Nuclear Information System (INIS)

    Amendt, P.; Eder, D.C.; Wilks, S.C.; Dunning, M.J.; Keane, C.J.

    1991-01-01

    Design studies for recombination x-ray lasers based on plasmas ionized by high intensity, short pulse optical lasers are presented. Transient lasing on n = 3 to n = 2 transitions in Lithium-like Neon allows for moderately short wavelengths (≤ 100 angstrom) without requiring ionizing intensities associated with relativistic electron quiver energies. The electron energy distribution following the ionizing pulse affects directly the predicted gains for this resonance transition. Efficiencies of 10 -6 or greater are found for plasma temperatures in the vicinity of 40 eV. Simulation studies of parametric heating phenomena relating to stimulated Raman and Compton scattering are presented. For electron densities less than about 2.5 x 10 20 cm -3 and peak driver intensity of 2 x 10 17 W/cm 2 at 0.25 μm with pulse length of 100 fsec, the amount of electron heating is found to be marginally significant. For Lithium-like Aluminum, the required relativistic ionizing intensity gives excessive electron heating and reduced efficiency, thereby rendering this scheme impractical for generating shorter wavelength lasing (≤ 50 angstrom) in the transient case. Following the transient lasing phase, a slow hydrodynamic expansion into the surrounding cool plasma is accompanied by quasi-static gain on the n = 4 to n = 3 transition in Lithium-like Neon. Parametric heating effects on gain optimization in this regime are also discussed. 18 refs., 6 figs

  4. Linear and nonlinear optical properties of Sb-doped GeSe2 thin films

    Science.gov (United States)

    Zhang, Zhen-Ying; Chen, Fen; Lu, Shun-Bin; Wang, Yong-Hui; Shen, Xiang; Dai, Shi-Xun; Nie, Qiu-Hua

    2015-06-01

    Sb-doped GeSe2 chalcogenide thin films are prepared by the magnetron co-sputtering method. The linear optical properties of as-deposited films are derived by analyzing transmission spectra. The refractive index rises and the optical band gap decreases from 2.08 eV to 1.41 eV with increasing the Sb content. X-ray photoelectron spectra further confirm the formation of a covalent Sb-Se bond. The third-order nonlinear optical properties of thin films are investigated under femtosecond laser excitation at 800 nm. The results show that the third-order nonlinear optical properties are enhanced with increasing the concentration of Sb. The nonlinear refraction indices of these thin films are measured to be on the order of 10-18 m2/W with a positive sign and the nonlinear absorption coefficients are obtained to be on the order of 10-10 m/W. These excellent properties indicate that Sb-doped Ge-Se films have a good prospect in the applications of nonlinear optical devices. Project supported by the National Key Basic Research Program of China (Grant No. 2012CB722703), the National Natural Science Foundation of China (Grant No. 61377061), the Young Leaders of Academic Climbing Project of the Education Department of Zhejiang Province, China (Grant No. pd2013092), the Program for Innovative Research Team of Ningbo City, China (Grant No. 2009B217), and the K. C. Wong Magna Fund in Ningbo University, China.

  5. Preparation and optical properties of gold-dispersed BaTiO3 thin films

    Energy Technology Data Exchange (ETDEWEB)

    Kineri, T; Mori, M [TDK Corp., Tokyo (Japan). R and D Center; Kadono, K; Sakaguchi, T; Miya, M; Wakabayashi, H [Osaka National Research Inst., Osaka (Japan); Tsuchiya, T [Science Univ. of Tokyo, Tokyo (Japan). Faculty of Industrial Science and Technology

    1993-12-01

    Recently, metal or semiconductor-doped glasses were widely studied because of their large resonant third-order nonlinearity. These glasses are utilized in an optical information field as all optical logic devices in the future. The gold-doped glass films or thin layers have a large third-order nonlinear susceptibility [chi] and are prepared by r.f. sputtering method, etc. The optical properties, particularly the refractive index or dielectric constant of the matrix, are very important for the optical nonlinearity of these materials. In this study, gold-dispersed BaTiO3 thin films and gold-dispersed SiO2 thin films are prepared using r.f. magnetron sputtering method, and the optical properties of the films are compared. The [chi] of the films are measured and the effect of the matrix of the films on [chi] is investigated. The headings in the paper are: Introduction, Experimental procedure, Results, Discussion, and Conclusion. 13 refs., 9 figs.

  6. Studies on thin film materials on acrylics for optical applications

    Indian Academy of Sciences (India)

    Unknown

    single layer films of MgF2 and SiO2 have good optical transmittance ... increased from 76°C to 108°C during a period of 12 min of deposition. ... the film to PMMA substrate is also good. The difference ... We tried a 4-layer coating of design, consisting of Sub. .... Coating Materials brochure of E Merck, Germany 1998 and of.

  7. Sensitivity versus polarisation in multilayer optical thin film design

    Directory of Open Access Journals (Sweden)

    Efrem K. Ejigu

    2012-07-01

    Full Text Available The design of a polarised optical filter is more complicated than that of a filter where the polarisation effect does not exist (at a normal angle of incidence. An error in the optical parameters, such as the physical thickness or refractive index of a layer, results in a change in the spectral performance of the multilayer structure. The correlation between error sensitivity and the polarisation effect of light in structures designed at an oblique angle was investigated. To illustrate the correlation, a perpendicular (S and parallel (P polarised beam splitter, at 0.9818 µm central wavelength, designed by genetic algorithm, was used. The beam splitter changes its state of polarisation according to the error in thickness simultaneously induced in each of the layers. The error was calculated by optimising the original design. The observation of the change of the state of polarisation as a result of error sensitivity leads to a different method of designing pure S-polarised or P-polarised optical filters.

  8. Optical waveguiding in amorphous tellurium oxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Nayak, Ranu; Gupta, Vinay; Dawar, A.L.; Sreenivas, K

    2003-11-24

    Optical waveguiding characteristics of amorphous TeO{sub 2-x} films deposited by reactive sputtering under different O{sub 2}:Ar gas mixtures are investigated on fused quartz and Corning glass substrates. Infra-red absorption band in the range 641-658 cm{sup -1} confirmed the formation of a Te-O bond, and a 20:80 O{sub 2}:Ar gas mixture ratio is found to be optimum for achieving highly uniform and transparent films at a high deposition rate. As grown amorphous films exhibited a large band gap (3.76 eV); a high refractive index value (2.042-2.052) with low dispersion over a wide wavelength range of 500-2000 nm. Optical waveguiding with low propagation loss of 0.26 dB/cm at 633 nm is observed on films subjected to a post-deposition annealing treatment at 200 deg. C. Packing density and etch rates have been determined and correlated with the lowering of optical propagation loss in the annealed films.

  9. Temperature dependent optical properties of (002) oriented ZnO thin film using surface plasmon resonance

    Science.gov (United States)

    Saha, Shibu; Mehan, Navina; Sreenivas, K.; Gupta, Vinay

    2009-08-01

    Temperature dependent optical properties of c-axis oriented ZnO thin film were investigated using surface plasmon resonance (SPR) technique. SPR data for double layer (prism-Au-ZnO-air) and single layer (prism-Au-air) systems were taken over a temperature range (300-525 K). Dielectric constant at optical frequency and real part of refractive index of the ZnO film shows an increase with temperature. The bandgap of the oriented ZnO film was found to decrease with rise in temperature. The work indicates a promising application of the system as a temperature sensor and highlights an efficient scientific tool to study optical properties of thin film under varying ambient conditions.

  10. Optical and electrical properties of boron doped diamond thin conductive films deposited on fused silica glass substrates

    Energy Technology Data Exchange (ETDEWEB)

    Ficek, M.; Sobaszek, M.; Gnyba, M. [Department of Metrology and Optoelectronics, Gdansk University of Technology, 11/12G. Narutowicza St., 80-233 Gdansk (Poland); Ryl, J. [Department of Electrochemistry, Corrosion and Material Engineering, Gdansk University of Technology, 11/12 Narutowicza St., 80-233 Gdansk (Poland); Gołuński, Ł. [Department of Metrology and Optoelectronics, Gdansk University of Technology, 11/12G. Narutowicza St., 80-233 Gdansk (Poland); Smietana, M.; Jasiński, J. [Institute of Microelectronics and Optoelectronics, Warsaw University of Technology, 75 Koszykowa St., 00-662 Warsaw (Poland); Caban, P. [Institute of Electronic Materials Technology, 133 Wolczynska St., 01-919 Warsaw (Poland); Bogdanowicz, R., E-mail: rbogdan@eti.pg.gda.pl [Department of Metrology and Optoelectronics, Gdansk University of Technology, 11/12G. Narutowicza St., 80-233 Gdansk (Poland); Materials and Process Simulation Center, California Institute of Technology, Pasadena, CA 91125 (United States)

    2016-11-30

    Highlights: • Growth of 60% of transmittance diamond films with resistivity as low as 48 Ω cm. • Two step seeding process of fused silica: plasma hydrogenation and wet seeding. • Nanodiamond seeding density of 2 × 10{sup 10} cm{sup −2} at fused silica substrates. • High refractive index (2.4 @550 nm) was achieved for BDD films deposited at 500 °C. - Abstract: This paper presents boron-doped diamond (BDD) film as a conductive coating for optical and electronic purposes. Seeding and growth processes of thin diamond films on fused silica have been investigated. Growth processes of thin diamond films on fused silica were investigated at various boron doping level and methane admixture. Two step pre-treatment procedure of fused silica substrate was applied to achieve high seeding density. First, the substrates undergo the hydrogen plasma treatment then spin-coating seeding using a dispersion consisting of detonation nanodiamond in dimethyl sulfoxide with polyvinyl alcohol was applied. Such an approach results in seeding density of 2 × 10{sup 10} cm{sup −2}. The scanning electron microscopy images showed homogenous, continuous and polycrystalline surface morphology with minimal grain size of 200 nm for highly boron doped films. The sp{sup 3}/sp{sup 2} ratio was calculated using Raman spectra deconvolution method. A high refractive index (range of 2.0–2.4 @550 nm) was achieved for BDD films deposited at 500 °C. The values of extinction coefficient were below 0.1 at λ = 550 nm, indicating low absorption of the film. The fabricated BDD thin films displayed resistivity below 48 Ohm cm and transmittance over 60% in the visible wavelength range.

  11. Optically induced paramagnetism in amorphous hydrogenated silicon nitride thin films

    International Nuclear Information System (INIS)

    Warren, W.L.; Kanicki, J.; Buchwald, W.R.; Rong, F.C.; Harmatz, M.

    1992-01-01

    This paper reports that the creation mechanisms of Si and N dangling bond defect centers in amorphous hydrogenated silicon nitride thin films by ultra-violet (UV) illumination are investigated. The creation efficiency and density of Si centers in the N-rich films are independent of illumination temperature, strongly suggesting that the creation mechanism of the spins in electronic in nature, i.e., a charge transfer mechanism. However, our results suggest that the creation of the Si dangling bond in the Si-rich films are different. Last, we find that the creation of the N dangling-bond in N-rich films can be fit to a stretched exponential time dependence, which is characteristic of dispersive charge transport

  12. Optimization of time on CF{sub 4}/O{sub 2} etchant for inductive couple plasma reactive ion etching of TiO{sub 2} thin film

    Energy Technology Data Exchange (ETDEWEB)

    Adzhri, R., E-mail: adzhri@gmail.com; Fathil, M. F. M.; Ruslinda, A. R.; Gopinath, Subash C. B.; Voon, C. H.; Foo, K. L.; Nuzaihan, M. N. M.; Azman, A. H.; Zaki, M. [Institute of Nano Electronic Engineering (INEE), Universiti Malaysia Perlis (UniMAP), Perlis (Malaysia); Arshad, M. K. Md., E-mail: mohd.khairuddin@unimap.edu.my; Hashim, U.; Ayub, R. M. [Institute of Nano Electronic Engineering (INEE), Universiti Malaysia Perlis (UniMAP), Perlis (Malaysia); School of Microelectronic Engineering, Universiti Malaysia Perlis (UniMAP), Perlis (Malaysia)

    2016-07-06

    In this work, we investigate the optimum etching of titanium dioxide (TiO{sub 2}) using inductive couple plasma reactive ion etching (ICP-RIE) on our fabricated devices. By using a combination of CF{sub 4}/O{sub 2} gases as plasma etchant with ratio of 3:1, three samples of TiO{sub 2} thin film were etched with different time duration of 10 s, 15 s and 20 s. The ion bombardment of CF{sub 4} gases with plasma enhancement by O{sub 2} gas able to break the oxide bond of TiO{sub 2} and allow anisotropic etch profile with maximum etch rate of 18.6 nm/s. The sample was characterized by using optical profilometer to determine the depth of etched area and scanning electron microscopy (SEM) for etch profile characterization.

  13. Optimization of time on CF_4/O_2 etchant for inductive couple plasma reactive ion etching of TiO_2 thin film

    International Nuclear Information System (INIS)

    Adzhri, R.; Fathil, M. F. M.; Ruslinda, A. R.; Gopinath, Subash C. B.; Voon, C. H.; Foo, K. L.; Nuzaihan, M. N. M.; Azman, A. H.; Zaki, M.; Arshad, M. K. Md.; Hashim, U.; Ayub, R. M.

    2016-01-01

    In this work, we investigate the optimum etching of titanium dioxide (TiO_2) using inductive couple plasma reactive ion etching (ICP-RIE) on our fabricated devices. By using a combination of CF_4/O_2 gases as plasma etchant with ratio of 3:1, three samples of TiO_2 thin film were etched with different time duration of 10 s, 15 s and 20 s. The ion bombardment of CF_4 gases with plasma enhancement by O_2 gas able to break the oxide bond of TiO_2 and allow anisotropic etch profile with maximum etch rate of 18.6 nm/s. The sample was characterized by using optical profilometer to determine the depth of etched area and scanning electron microscopy (SEM) for etch profile characterization.

  14. Optical band gap study of a-Se and Se-Sb thin films

    International Nuclear Information System (INIS)

    Kaur, Ramandeep; Singh, Palwinder; Thakur, Anup

    2016-01-01

    Amorphous selenium (a-Se) and a-Se_9_5Sb_5 alloy were prepared using melt quenching technique. X-ray diffraction (XRD) pattern confirmed the amorphous nature of the prepared samples. Composition of the prepared samples has been determined using Energy dispersive X-ray fluorescence (EDXRF) technique. Differential thermal analysis (DTA) confirmed the glassy nature of the prepared samples. Thin films of the prepared samples were deposited on glass substrate using thermal evaporation method. Amorphous nature of the deposited films was confirmed using XRD. Optical properties of these films were obtained from the UV-VIS transmission spectra, at normal incidence, over 200-1100 nm spectral range. The optical absorption edge was described by using the model given by the Tauc. Optical band gap of the deposited films was calculated using Tauc plot. Optical characterization showed that average transmission and optical band gap decreased with the addition of antinomy.

  15. Uniform GaN thin films grown on (100) silicon by remote plasma atomic layer deposition

    International Nuclear Information System (INIS)

    Shih, Huan-Yu; Chen, Miin-Jang; Lin, Ming-Chih; Chen, Liang-Yih

    2015-01-01

    The growth of uniform gallium nitride (GaN) thin films was reported on (100) Si substrate by remote plasma atomic layer deposition (RP-ALD) using triethylgallium (TEG) and NH 3 as the precursors. The self-limiting growth of GaN was manifested by the saturation of the deposition rate with the doses of TEG and NH 3 . The increase in the growth temperature leads to the rise of nitrogen content and improved crystallinity of GaN thin films, from amorphous at a low deposition temperature of 200 °C to polycrystalline hexagonal structures at a high growth temperature of 500 °C. No melting-back etching was observed at the GaN/Si interface. The excellent uniformity and almost atomic flat surface of the GaN thin films also infer the surface control mode of the GaN thin films grown by the RP-ALD technique. The GaN thin films grown by RP-ALD will be further applied in the light-emitting diodes and high electron mobility transistors on (100) Si substrate. (paper)

  16. Room temperature synthesis of porous SiO2 thin films by plasma enhanced chemical vapor deposition

    OpenAIRE

    Barranco Quero, Ángel; Cotrino Bautista, José; Yubero Valencia, Francisco; Espinós, J. P.; Rodríguez González-Elipe, Agustín

    2004-01-01

    Synthesis of porous SiO2 thin films in room temperature was carried out using plasma enhanced chemical vapor deposition (CVD) in an electron cyclotron resonance microwave reactor with a downstream configuration.The gas adsorption properties and the type of porosity of the SiO2 thin films were assessed by adsorption isotherms of toluene at room temperature.The method could also permit the tailoring synthesis of thin films when both composition and porosity can be simultaneously and independent...

  17. Evaluation of Retinal Nerve Fiber Layer Thinning in Myopic Glaucoma: Impact of Optic Disc Morphology.

    Science.gov (United States)

    Na, Kyeong Ik; Lee, Won June; Kim, Young Kook; Park, Ki Ho; Jeoung, Jin Wook

    2017-12-01

    The purpose of this study was to investigate the role of optic disc torsion on the rate of progressive retinal nerve fiber layer (RNFL) thinning in patients with myopic open-angle glaucoma. We included 102 patients with myopic open-angle glaucoma accompanied by glaucomatous damage confined to a single hemiretina who were followed up over a 5-year period. We divided the subjects into three groups according to the presence or absence of optic disc torsion and the correspondence between the direction of optic disc torsion and the location of glaucomatous damage: torsion with reverse correspondence group (eyes showing inferior optic disc torsion with glaucomatous damage in the superior quadrant or eyes showing superior torsion with damage in the inferior quadrant), no torsion group, and torsion with correspondence group (eyes showing inferior optic disc torsion with glaucomatous damage in the inferior quadrant or eyes showing superior torsion with damage in the superior quadrant). Changes in the peripapillary RNFL thickness (pRNFLT), evaluated using linear mixed model analysis, were compared among the three groups to determine the relationship between optic disc torsion and pRNFLT changes. Among the total of 102 subjects, 13 eyes (12.7%) exhibited optic disc torsion with reverse correspondence, 59 (57.8%) did not exhibit optic disc torsion, and 30 (29.4%) exhibited optic disc torsion with correspondence. pRNFL thinning in the quadrant with glaucomatous damage was significantly faster in the torsion with correspondence group (-1.66 μm/y) than those in the no torsion (-1.14 μm/y; P = 0.032) and torsion with reverse correspondence (-0.50 μm/y; P optic disc torsion-glaucomatous damage correspondence is an important prognostic factor for patients with myopic open-angle glaucoma.

  18. Physics and technology of optical storage in polymer thin films

    DEFF Research Database (Denmark)

    Ramanujam, P.S.; Hvilsted, Søren; Ujhelyi, F.

    2001-01-01

    We discuss different strategies for optical storage of information in polymeric films. An outline of the existing trends is given. The synthesis and characterization of side-chain azobenzene polyester films for holographic storage of information is described. A compact holographic memory card...... system based on polarization holography is described. A storage density of greater than 10MB/cm2 has been achieved so far, with a potential increase to 100MB/cm(2) using multiplexing techniques and software correction. Finally the role of surface relief in azobenzene polymers on irradiation...

  19. Practical design and production of optical thin films

    CERN Document Server

    Willey, Ronald R

    2002-01-01

    Providing insider viewpoints and perspectives unavailable in any other text, this book presents useful guidelines and tools to produce effective coatings and films. Covering subjects ranging from materials selection and process development to successful system construction and optimization, it contains expanded discussions on design visualization, dense wavelength division multiplexing, new coating equipment, electrochromic and chemically active coatings, ion-assisted deposition, and optical monitoring sensitivity. Furnishing real-world examples and know-how, the book introduces Fourier analysis and synthesis without difficult mathematical concepts and equations.

  20. Thin nanodiamond membranes and their microstructural, optical and photoelectrical properties

    Czech Academy of Sciences Publication Activity Database

    Mortet, V.; D´Haen, J.; Potměšil, Jiří; Kravets, Roman; Drbohlav, Ivo; Vorlíček, Vladimír; Rosa, Jan; Vaněček, Milan

    2005-01-01

    Roč. 14, - (2005), s. 393-397 ISSN 0925-9635 R&D Projects: GA MŠk(CZ) LN00A015; GA ČR(CZ) GA202/05/2233; GA MŠk(CZ) LC510 EU Projects: European Commission(XE) HPRN-CT-1999-00139 Institutional research plan: CEZ:AV0Z10100521 Keywords : nanodiamond * structural characterization * optical properties * defect spectroscopy Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.988, year: 2005

  1. Demonstration of high-performance p-type tin oxide thin-film transistors using argon-plasma surface treatments

    Science.gov (United States)

    Bae, Sang-Dae; Kwon, Soo-Hun; Jeong, Hwan-Seok; Kwon, Hyuck-In

    2017-07-01

    In this work, we investigated the effects of low-temperature argon (Ar)-plasma surface treatments on the physical and chemical structures of p-type tin oxide thin-films and the electrical performance of p-type tin oxide thin-film transistors (TFTs). From the x-ray photoelectron spectroscopy measurement, we found that SnO was the dominant phase in the deposited tin oxide thin-film, and the Ar-plasma treatment partially transformed the tin oxide phase from SnO to SnO2 by oxidation. The resistivity of the tin oxide thin-film increased with the plasma-treatment time because of the reduced hole concentration. In addition, the root-mean-square roughness of the tin oxide thin-film decreased as the plasma-treatment time increased. The p-type oxide TFT with an Ar-plasma-treated tin oxide thin-film exhibited excellent electrical performance with a high current on-off ratio (5.2 × 106) and a low off-current (1.2 × 10-12 A), which demonstrates that the low-temperature Ar-plasma treatment is a simple and effective method for improving the electrical performance of p-type tin oxide TFTs.

  2. Optical and electrical characterization of AgInS2 thin films deposited by spray pyrolysis

    International Nuclear Information System (INIS)

    Calixto-Rodriguez, M.; Martinez, H.; Calixto, M.E.; Pena, Y.; Martinez-Escobar, Dalia; Tiburcio-Silver, A.; Sanchez-Juarez, A.

    2010-01-01

    Silver indium sulfide (AgInS 2 ) thin films have been prepared by spray pyrolysis (SP) technique using silver acetate, indium acetate, and N, N-dimethylthiourea as precursor compounds. Films were deposited onto glass substrates at different substrate temperatures (T s ) and Ag:In:S ratios in the starting solutions. Optical transmission and reflection as well as electrical measurements were performed in order to study the effect of deposition parameters on the optical and electrical properties of AgInS 2 thin films. X-ray diffraction measurements were used to identify the deposited compounds. It was found that different compounds such as AgInS 2 , Ag 2 S, In 2 O 3 , and In 2 S 3 can be grown only by changing the Ag:In:S ratio in the starting solution and T s . So that, by carefully selecting the deposition parameters, single phase AgInS 2 thin films can be easily grown. Thin films obtained using a molar ratio of Ag:In:S = 1:1:2 and T s = 400 o C, have an optical band gap of 1.9 eV and n-type electrical conductivity with a value of 0.3 Ω -1 cm -1 in the dark.

  3. AZO Thin Films by Sol-Gel Process for Integrated Optics

    Directory of Open Access Journals (Sweden)

    Azzedine Boudrioua

    2013-07-01

    Full Text Available Undoped and aluminum-doped zinc oxide (AZO thin films are prepared by the sol-gel process. Zinc acetate dihydrate, ethanol, and monoethanolamine are used as precursor, solvent, and stabilizer, respectively. In the case of AZO, aluminum nitrate nonahydrate is added to the precursor solution with an atomic percentage equal to 1 and 2 at.% Al. The multi thin layers are deposited by spin-coating onto glass substrates, and are transformed into ZnO upon annealing at 550 °C. Films display a strong preferential orientation, with high values for the Texture Coefficients (TC of the (002 direction (TC(002 ≈ 3. The structural, morphological, and optical properties of the thin films as a function of aluminum content have been investigated using X-Ray Diffraction (XRD, Atomic Force Microscopy (AFM, and Scanning Electronic Microscopy (SEM. Waveguiding properties of the thin films have been also studied using m-lines spectroscopy. The results indicate that the films are monomodes at 632.8 nm with optical propagation optical losses estimated around 1.6 decibel per cm (dB/cm.

  4. Optical and structural properties of natural MnSeO{sub 4} mineral thin film

    Energy Technology Data Exchange (ETDEWEB)

    Kariper, Ishak Afsin, E-mail: akariper@gmail.com [Erciyes University, Education Faculty, Kayseri (Turkey)

    2017-05-15

    Manganese selenite (MnSeO{sub 4}) crystalline thin film has been produced with chemical bath deposition on substrates (commercial glass). Properties of the thin film, such as transmittance, absorption, and optical band gap and refraction index have been investigated via UV/VIS Spectrum. The structural properties of orthorhombic form have been observed in XRD. The structural and optical properties of MnSeO{sub 4} thin films, deposited at different pH levels were analyzed. Some properties of the films have been changed with the change of pH level, which has been deeply investigated. The grain size of MnSeO{sub 4} thin film has reached its highest value at pH 9. The refraction index and extinction coefficient of MnSeO{sub 4} thin films were measured to be 1.53, 2.86, 2.07, 1.53 (refraction index) and 0.005, 0.029, 0.014, 0.005 (extinction coefficient) for grain sizes 21, 13, 26, and 5 nm respectively. The band gaps (Eg) of the films were measured to be 2.06, 2.57, 2.04, and 2.76 eV for the grain sizes mentioned above. The value of dielectric constant at pH 10 was calculated as 1.575. (author)

  5. Thinning of multilayer graphene to monolayer graphene in a plasma environment

    International Nuclear Information System (INIS)

    Hazra, K S; Misra, D S; Rafiee, J; Rafiee, M A; Koratkar, N; Mathur, A; Roy, S S; McLauhglin, J

    2011-01-01

    We present a facile approach to transform multilayer graphene to single-layer graphene in a gradual thinning process. Our technique is based upon gradual etching of multilayer graphene in a hydrogen and nitrogen plasma environment. High resolution transmission microscopy, selected area electron diffraction and Raman spectroscopy confirm the transformation of multilayer graphene to monolayer graphene at a substrate temperature of ∼ 400 0 C. The shift in the position of the G-band peak shows a perfect linear dependence with substrate temperature, which indicates a controlled gradual etching process. Selected area electron diffraction also confirmed the removal of functional groups from the graphene surface due to the plasma treatment. We also show that plasma treatment can be used to engineer graphene nanomesh structures.

  6. Niobium thin film coating on a 500-MHz copper cavity by plasma deposition

    Energy Technology Data Exchange (ETDEWEB)

    Haipeng Wang; Genfa Wu; H. Phillips; Robert Rimmer; Anne-Marie Valente; Andy Wu

    2005-05-16

    A system using an Electron Cyclotron Resonance (ECR) plasma source for the deposition of a thin niobium film inside a copper cavity for superconducting accelerator applications has been designed and is being constructed. The system uses a 500-MHz copper cavity as both substrate and vacuum chamber. The ECR plasma will be created to produce direct niobium ion deposition. The central cylindrical grid is DC biased to control the deposition energy. This paper describes the design of several subcomponents including the vacuum chamber, RF supply, biasing grid and magnet coils. Operational parameters are compared between an operating sample deposition system and this system. Engineering work progress toward the first plasma creation will be reported here.

  7. Etching mechanism of MgO thin films in inductively coupled Cl2/Ar plasma

    International Nuclear Information System (INIS)

    Efremov, A.M.; Koo, Seong-Mo; Kim, Dong-Pyo; Kim, Kyoung-Tae; Kim, Chang-Il

    2004-01-01

    The etching mechanism of MgO thin films in Cl 2 /Ar plasma was investigated. It was found that the increasing Ar in the mixing ratio of Cl 2 /Ar plasma causes nonmonotonic MgO etch rate, which reaches a maximum value at 70%Ar+30%Cl 2 . Langmuir probe measurement showed the noticeable influence of Cl 2 /Ar mixing ratio on electron temperature and electron density. The zero-dimensional plasma model indicated monotonic changes of both densities and fluxes of active species. At the same time, analyses of surface kinetics showed the possibility of nonmonotonic etch rate behavior due to the concurrence of physical and chemical pathways in ion-assisted chemical reaction

  8. Optical modelling of photoluminescence emitted by thin doped films

    International Nuclear Information System (INIS)

    Pigeat, P.; Easwarakhanthan, T.; Briancon, J.L.; Rinnert, H.

    2011-01-01

    Photoluminescence (PL) spectra emitted by doped films are deformed owing to film thickness-dependent wave interference. This hampers knowing well their PL generating mechanisms as well as designing photonic devices with suitable geometries that improve their PL efficiency. We develop in this paper an energy model for PL emitted by doped films considering the interaction between the wavelength-differing incident standing and emitted waves, their energy transfer in-between, and the interferences undergone by both. The film optical constants are estimated fitting the model to the measured PL. This simple model has thus allowed us to interpret the evolution of PL emitted by Er-doped AlN films prepared on Si substrates by reactive magnetron sputtering. The shapes, the amplitudes, and the illusive sub-spectral features of the PL spectra depend essentially on the film thickness. The model further predicts high sensitivity for PL emitted by non-homogenously doped stacked-films to incident light wavelengths and film-thickness variations. This property has potential applications in tracking wavelength variations and in measuring physical quantities producing thickness variations. This model may be used to optimise PL efficiency of photonic devices through different film geometries and optical properties.

  9. Effects of O2 plasma post-treatment on ZnO: Ga thin films grown by H2O-thermal ALD

    Science.gov (United States)

    Lee, Yueh-Lin; Chuang, Jia-Hao; Huang, Tzu-Hsuan; Ho, Chong-Long; Wu, Meng-Chyi

    2013-03-01

    Transparent conducting oxides have been widely employed in optoelectronic devices using the various deposition methods such as sputtering, thermal evaporator, and e-gun evaporator technologies.1-3 In this work, gallium doped zinc oxide (ZnO:Ga) thin films were grown on glass substrates via H2O-thermal atomic layer deposition (ALD) at different deposition temperatures. ALD-GZO thin films were constituted as a layer-by-layer structure by stacking zinc oxides and gallium oxides. Diethylzinc (DEZ), triethylgallium (TEG) and H2O were used as zinc, gallium precursors and oxygen source, respectively. Furthermore, we investigated the influences of O2 plasma post-treatment power on the surface morphology, electrical and optical property of ZnO:Ga films. As the result of O2 plasma post-treatment, the characteristics of ZnO:Ga films exhibit a smooth surface, low resistivity, high carrier concentration, and high optical transmittance in the visible spectrum. However, the transmittance decreases with O2 plasma power in the near- and mid-infrared regions.

  10. Sputter deposition of PZT piezoelectric films on thin glass substrates for adjustable x-ray optics.

    Science.gov (United States)

    Wilke, Rudeger H T; Johnson-Wilke, Raegan L; Cotroneo, Vincenzo; Davis, William N; Reid, Paul B; Schwartz, Daniel A; Trolier-McKinstry, Susan

    2013-05-10

    Piezoelectric PbZr(0.52)Ti(0.48)O(3) (PZT) thin films deposited on thin glass substrates have been proposed for adjustable optics in future x-ray telescopes. The light weight of these x-ray optics enables large collecting areas, while the capability to correct mirror figure errors with the PZT thin film will allow much higher imaging resolution than possible with conventional lightweight optics. However, the low strain temperature and flexible nature of the thin glass complicate the use of chemical-solution deposition due to warping of the substrate at typical crystallization temperatures for the PZT. RF magnetron sputtering enabled preparation of PZT films with thicknesses up to 3 μm on Schott D263 glass substrates with much less deformation. X-ray diffraction analysis indicated that the films crystallized with the perovskite phase and showed no indication of secondary phases. Films with 1 cm(2) electrodes exhibited relative permittivity values near 1100 and loss tangents below 0.05. In addition, the remanent polarization was 26 μC/cm(2) with coercive fields of 33 kV/cm. The transverse piezoelectric coefficient was as high as -6.1±0.6 C/m(2). To assess influence functions for the x-ray optics application, the piezoelectrically induced deflection of individual cells was measured and compared with finite-element-analysis calculations. The good agreement between the results suggests that actuation of PZT thin films can control mirror figure errors to a precision of about 5 nm, allowing sub-arcsecond imaging.

  11. Weathering resistance of thin plasma polymer films on pre-coated steel =

    Science.gov (United States)

    Serra, Ricardo Gil Henriques

    O trabalho apresentado teve origem no projecto de investigacao “Tailored Thin Plasma Polymers Films for Surface Engineering of Coil Coated Steel”, financiado pelo Programa Europeu ECSC Steel Research. Sistemas de aco galvanizado pre-pintado em banda a base de poliester e poliuretano foram submetidos a um processo de polimerizacao por plasma onde um filme fino foi depositado de modo a modificar as propriedades de superficie. Foram usados reactores de catodo oco, microondas e radio frequencia para a deposicao do polimero fino. Os sistemas preparados foram analisados de modo a verificar a influencia do processo de polimerizacao por plasma na alteracao das propriedades barreira dos sistemas pre-pintados em banda. Foi estudado o efeito dos diferentes passos do processo de polimerizacao por plasma, bem como o efeito de diferentes variaveis operatorias. A mistura precursora foi variada de modo a modificar as propriedades da superficie de modo a poder vir a obter maior hidrofobicidade, maior resistencia a marcas digitais, bem como maior facilidade de limpeza. Os testes foram conduzidos em solucao de NaCl 0,5 M. Para o trabalho foram usadas tecnicas de analise da morfologia da superficie como Microscopia de Forca Atomica e Microscopia Electronica de Varrimento. As propriedades electroquimicas dos sistemas foram estudadas por Espectroscopia de Impedancia Electroquimica. A estrutura dos filmes gerados no processo de polimerizacao por plasma foi caracterizada por Microscopia de Transmissao Electronica. A modificacao das propriedades opticas devido ao processo de polimerizacao por plasma foi tambem obtida.

  12. Optical coherence tomography detection of characteristic retinal nerve fiber layer thinning in nasal hypoplasia of the optic disc.

    Science.gov (United States)

    Haruta, M; Kodama, R; Yamakawa, R

    2017-12-01

    PurposeTo determine the clinical usefulness of optical coherence tomography (OCT) for detecting thinning of the retinal nerve fiber layer (RNFL) in eyes with nasal hypoplasia of the optic discs (NHOD).Patients and methodsThe medical records of five patients (eight eyes) with NHOD were reviewed. The ratio of the disc-macula distance to the disc diameter (DM/DD) and the disc ovality ratio of the minimal to maximal DD were assessed using fundus photographs. The RNFL thicknesses of the temporal, superior, nasal, and inferior quadrants were evaluated using OCT quadrant maps.ResultsAll eight eyes had temporal visual field defects that respected the vertical meridians that needed to be differentiated from those related to chiasmal compression. The mean DM/DD ratio was 3.1 and the mean disc ovality ratio was 0.81. The mean RNFL thicknesses of the temporal, superior, nasal, and inferior quadrants were 90.3, 103.1, 34.8, and 112.8 microns, respectively.ConclusionSmall optic discs and tilted discs might be associated with NHOD. Measurement of the RNFL thickness around the optic disc using OCT scans clearly visualized the characteristic RNFL thinning of the nasal quadrants corresponding to the temporal sector visual field defects in eyes with NHOD. OCT confirmed the presence of NHOD and might differentiate eyes with NHOD from those with chiasmal compression.

  13. Optical switching and photoluminescence in erbium-implanted vanadium dioxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Lim, Herianto, E-mail: mail@heriantolim.com; Stavrias, Nikolas; Johnson, Brett C.; McCallum, Jeffrey C. [School of Physics, University of Melbourne, Parkville, Victoria 3010 (Australia); Marvel, Robert E.; Haglund, Richard F. [Department of Physics and Astronomy, Vanderbilt University, Nashville, Tennessee 37240 (United States)

    2014-03-07

    Vanadium dioxide (VO{sub 2}) is under intensive consideration for optical switching due to its reversible phase transition, which features a drastic and rapid shift in infrared reflectivity. Classified as an insulator–to–metal transition, the phase transition in VO{sub 2} can be induced thermally, electrically, and optically. When induced optically, the transition can occur on sub-picosecond time scales. It is interesting to dope VO{sub 2} with erbium ions (Er{sup 3+}) and observe their combined properties. The first excited-state luminescence of Er{sup 3+} lies within the wavelength window of minimal transmission-loss in silicon and has been widely utilized for signal amplification and generation in silicon photonics. The incorporation of Er{sup 3+} into VO{sub 2} could therefore result in a novel photonic material capable of simultaneous optical switching and amplification. In this work, we investigate the optical switching and photoluminescence in Er-implanted VO{sub 2} thin films. Thermally driven optical switching is demonstrated in the Er-implanted VO{sub 2} by infrared reflectometry. Photoluminescence is observed in the thin films annealed at ∼800 °C or above. In addition, Raman spectroscopy and a statistical analysis of switching hysteresis are carried out to assess the effects of the ion implantation on the VO{sub 2} thin films. We conclude that Er-implanted VO{sub 2} can function as an optical switch and amplifier, but with reduced switching quality compared to pure VO{sub 2}.

  14. Thermodynamic phase profiles of optically thin midlatitude cloud and their relation to temperature

    Energy Technology Data Exchange (ETDEWEB)

    Naud, C. M.; Del Genio, Anthony D.; Haeffelin, M.; Morille, Y.; Noel, V.; Dupont, Jean-Charles; Turner, David D.; Lo, Chaomei; Comstock, Jennifer M.

    2010-06-03

    Winter cloud phase and temperature profiles derived from ground-based lidar depolarization and radiosonde measurements are analyzed for two midlatitude locations: the United States Atmospheric Radiation Measurement Program Southern Great Plains (SGP) site and the Site Instrumental de Recherche par Télédétection Atmosphérique (SIRTA) in France. Because lidars are attenuated in optically thick clouds, the dataset only includes optically thin clouds (optical thickness < 3). At SGP, 57% of the clouds observed with the lidar in the temperature range 233-273 K are either completely liquid or completely glaciated, while at SIRTA only 42% of the observed clouds are single phase, based on a depolarization ratio threshold of 11% for differentiating liquid from ice. Most optically thin mixed phase clouds show an ice layer at cloud top, and clouds with liquid at cloud top are less frequent. The relationship between ice phase occurrence and temperature only slightly changes between cloud base and top. At both sites liquid is more prevalent at colder temperatures than has been found previously in aircraft flights through frontal clouds of greater optical thicknesses. Liquid in clouds persists to colder temperatures at SGP than SIRTA. This information on the average temperatures of mixed phase clouds at both locations complements earlier passive satellite remote sensing measurements that sample cloud phase near cloud top and for a wider range of cloud optical thicknesses.

  15. Effect of cell thickness on the electrical and optical properties of thin film silicon solar cell

    Science.gov (United States)

    Zaki, A. A.; El-Amin, A. A.

    2017-12-01

    In this work Electrical and optical properties of silicon thin films with different thickness were measured. The thickness of the Si films varied from 100 to 800 μm. The optical properties of the cell were studied at different thickness. A maximum achievable current density (MACD) generated by a planar solar cell, was measured for different values of the cell thickness which was performed by using photovoltaic (PV) optics method. It was found that reducing the values of the cell thickness improves the open-circuit voltage (VOC) and the fill factor (FF) of the solar cell. The optical properties were measured for thin film Si (TF-Si) at different thickness by using the double beam UV-vis-NIR spectrophotometer in the wavelength range of 300-2000 nm. Some of optical parameters such as refractive index with dispersion relation, the dispersion energy, the oscillator energy, optical band gap energy were calculated by using the spectra for the TF-Si with different thickness.

  16. Production of optically thin free-standing oil films from the edge of a rotating disc

    International Nuclear Information System (INIS)

    Cramer, J.G.; Burch, D.F.; Rodenberg, R.; Cramer, P.B.

    1980-01-01

    A method is described for forming thin free-standing oil films which are spun from the edge of a sharp-edged rotating disc. The films can be made thin enough to show strong optical interference colors when viewed in white light. The thinnest films have areal densities down to about 10 to 20 μgm/cm 2 . A stable roughly triangular film with an area of about 10 cm 2 and fairly uniform thickness can be readily produced. Much larger films having either greater thickness or less stability are also possible. Films have been produced both in air and in vacuum

  17. Optical fiber magnetic field sensors with TbDyFe magnetostrictive thin films as sensing materials.

    Science.gov (United States)

    Yang, Minghong; Dai, Jixiang; Zhou, Ciming; Jiang, Desheng

    2009-11-09

    Different from usually-used bulk magnetostrictive materials, magnetostrictive TbDyFe thin films were firstly proposed as sensing materials for fiber-optic magnetic field sensing characterization. By magnetron sputtering process, TbDyFe thin films were deposited on etched side circle of a fiber Bragg Grating (FBG) as sensing element. There exists more than 45pm change of FBG wavelength when magnet field increase up to 50 mT. The response to magnetic field is reversible, and could be applicable for magnetic and current sensing.

  18. Giant magneto-optical Kerr effect and universal Faraday effect in thin-film topological insulators.

    Science.gov (United States)

    Tse, Wang-Kong; MacDonald, A H

    2010-07-30

    Topological insulators can exhibit strong magneto-electric effects when their time-reversal symmetry is broken. In this Letter we consider the magneto-optical Kerr and Faraday effects of a topological insulator thin film weakly exchange coupled to a ferromagnet. We find that its Faraday rotation has a universal value at low frequencies θF=tan(-1)α, where α is the vacuum fine structure constant, and that it has a giant Kerr rotation θK=π/2. These properties follow from a delicate interplay between thin-film cavity confinement and the surface Hall conductivity of a topological insulator's helical quasiparticles.

  19. Optical measurements of lateral energy flow and plasma motion in laser-produced plasmas

    International Nuclear Information System (INIS)

    Benjamin, R.F.; Riffle, J.H.

    1979-01-01

    An optical system consisting of a telephoto lens and multi-image camera is described and the experimental results and their implications are presented. We will also describe the opto-electronic system that will measure the time history of the energy flow with sub-nanosecond resolution. The system will be useful to study both one- and two-dimensional geometries. The third optical diagnostic is a laser probe utilizing detection by the opto-electronic system mentioned above. This diagnostic measures plasma motion as well as energy flow. The laser probe and detection system mounts directly onto the target chamber at LASLs Gemini CO 2 laser, causing severe alignment and stability problems whose solutions will be shown

  20. Layer-by-layer thinning of MoSe{sub 2} by soft and reactive plasma etching

    Energy Technology Data Exchange (ETDEWEB)

    Sha, Yunfei [Engineering Research Center of IoT Technology Applications (Ministry of Education), Department of Electronic Engineering, Jiangnan University, Wuxi 214122 (China); Xiao, Shaoqing, E-mail: larring0078@hotmail.com [Engineering Research Center of IoT Technology Applications (Ministry of Education), Department of Electronic Engineering, Jiangnan University, Wuxi 214122 (China); Zhang, Xiumei [Engineering Research Center of IoT Technology Applications (Ministry of Education), Department of Electronic Engineering, Jiangnan University, Wuxi 214122 (China); Qin, Fang [Analysis & Testing Center, Jiangnan University, Wuxi 214122 (China); Gu, Xiaofeng, E-mail: xfgu@jiangnan.edu.cn [Engineering Research Center of IoT Technology Applications (Ministry of Education), Department of Electronic Engineering, Jiangnan University, Wuxi 214122 (China)

    2017-07-31

    Highlights: • Soft plasma etching technique using SF{sub 6} + N{sub 2} as precursors for layer-by-layer thinning of MoSe{sub 2} was adopted in this work. • Optical microscopy, Raman, photoluminescence and atomic force microscopy measurements were used to confirm the thickness change. • Layer-dependent vibrational and photoluminescence spectra of the etched MoSe{sub 2} were also demonstrated. • Equal numbers of MoSe{sub 2} layers can be removed uniformly without affecting the underlying SiO{sub 2} substrate and the remaining MoSe{sub 2} layers. - Abstract: Two-dimensional (2D) transition metal dichalcogenides (TMDs) like molybdenum diselenide (MoSe{sub 2}) have recently gained considerable interest since their properties are complementary to those of graphene. Unlike gapless graphene, the band structure of MoSe{sub 2} can be changed from the indirect band gap to the direct band gap when MoSe{sub 2} changed from bulk material to monolayer. This transition from multilayer to monolayer requires atomic-layer-precision thining of thick MoSe{sub 2} layers without damaging the remaining layers. Here, we present atomic-layer-precision thinning of MoSe{sub 2} nanaosheets down to monolayer by using SF{sub 6} + N{sub 2} plasmas, which has been demonstrated to be soft, selective and high-throughput. Optical microscopy, atomic force microscopy, Raman and photoluminescence spectra suggest that equal numbers of MoSe{sub 2} layers can be removed uniformly regardless of their initial thickness, without affecting the underlying SiO{sub 2} substrate and the remaining MoSe{sub 2} layers. By adjusting the etching rates we can achieve complete MoSe{sub 2} removal and any disired number of MoSe{sub 2} layers including monolayer. This soft plasma etching method is highly reliable and compatible with the semiconductor manufacturing processes, thereby holding great promise for various 2D materials and TMD-based devices.

  1. Synthesis, microstructural, optical and mechanical properties of yttria stabilized zirconia thin films

    International Nuclear Information System (INIS)

    Amézaga-Madrid, P.; Hurtado-Macías, A.; Antúnez-Flores, W.; Estrada-Ortiz, F.; Pizá-Ruiz, P.; Miki-Yoshida, M.

    2012-01-01

    Highlights: ► Thin films of YSZ obtained by AACVD have high quality. ► They are uniform, very transparent, and have high hardness. ► Optical characterization were performed in detail, optical constants and band gap energy were determined as a function of dopant content. - Abstract: Thin films of yttria-stabilized zirconia (YSZ) exhibit exceptional properties, such as high thermal, chemical and mechanical stability. Here, we report the synthesis of YSZ thin films by aerosol assisted chemical vapour deposition onto borosilicate glass and fused silica substrates. Optimum deposition temperature was 673 ± 5 K. In addition, different Y content was tried to analyse its influence in the microstructure and properties of the films. The films were uniform, transparent and non-light scattering. Surface morphology and cross sectional microstructure were studied by field emission scanning electron microscopy. The microstructure of the films was characterized by grazing incidence X-ray diffraction. Crystallite size and lattice parameter were obtained. Optical properties were analysed from reflectance and transmittance spectra; from these measurements, optical constants and band gap were obtained. Quantum confinement effect, due to the small grain size of the films, was evident in the high band gap energy obtained. Nanoindentation tests were realized at room temperature employing the continuous stiffness measurement method, to determine the hardness and elastic modulus as a function of Y content.

  2. On the Mechanism of In Nanoparticle Formation by Exposing ITO Thin Films to Hydrogen Plasmas.

    Science.gov (United States)

    Fan, Zheng; Maurice, Jean-Luc; Chen, Wanghua; Guilet, Stéphane; Cambril, Edmond; Lafosse, Xavier; Couraud, Laurent; Merghem, Kamel; Yu, Linwei; Bouchoule, Sophie; Roca I Cabarrocas, Pere

    2017-10-31

    We present our systematic work on the in situ generation of In nanoparticles (NPs) from the reduction of ITO thin films by hydrogen (H 2 ) plasma exposure. In contrast to NP deposition from the vapor phase (i.e., evaporation), the ITO surface can be considered to be a solid reservoir of In atoms thanks to H 2 plasma reduction. On one hand, below the In melting temperature, solid In NP formation is governed by the island-growth mode, which is a self-limiting process because the H 2 plasma/ITO interaction will be gradually eliminated by the growing In NPs that cover the ITO surface. On the other hand, we show that above the melting temperature In droplets prefer to grow along the grain boundaries on the ITO surface and dramatic coalescence occurs when the growing NPs connect with each other. This growth-connection-coalescence behavior is even strengthened on In/ITO bilayers, where In particles larger than 10 μm can be formed, which are made of evaporated In atoms and in situ released ones. Thanks to this understanding, we manage to disperse dense evaporated In NPs under H 2 plasma exposure when inserting an ITO layer between them and substrate like c-Si wafer or glass by modifying the substrate surface chemistry. Further studies are needed for more precise control of this self-assembling method. We expect that our findings are not limited to ITO thin films but could be applicable to various metal NPs generation from the corresponding metal oxide thin films.

  3. Reduction of etching damage in lead-zirconate-titanate thin films with inductively coupled plasma

    International Nuclear Information System (INIS)

    Lim, Kyu-Tae; Kim, Kyoung-Tae; Kim, Dong-Pyo; Kim, Chang-Il

    2003-01-01

    In this work, we etched lead-zirconate-titanate (PZT) films with various additive gases (O 2 and Ar) in Cl 2 /CF 4 plasmas, while mixing ratio was fixed at 8/2. After the etching, the plasma induced damages are characterized in terms of hysteresis curves, leakage current, retention properties, and switching polarization. When the electrical properties of PZT etched in O 2 or Ar added to Cl 2 /CF 4 were compared, the value of remanent polarization in O 2 added to Cl 2 /CF 4 plasma is higher than that in Ar added plasma. The maximum etch rate of the PZT thin films was 145 nm/min for 30% Ar added Cl 2 /CF 4 gas having mixing ratio of 8/2 and 110 nm/min for 10% O 2 added to that same gas mixture. In order to recover the ferroelectric properties of the PZT thin films after etching, we annealed the etched PZT thin films at 550 deg. C in an O 2 atmosphere for 10 min. From the hysteresis curves, leakage current, retention property, and switching polarization, the reduction of the etching damage and the recovery via the annealing turned out to be more effective when O 2 was added to Cl 2 /CF 4 than Ar. X-ray diffraction showed that the structural damage was lower when O 2 was added to Cl 2 /CF 4 and the improvement in the ferroelectric properties of the annealed samples was consistent with the increased intensities of the (100) and the (200) PZT peaks

  4. Internal optical losses in very thin CW heterojunction laser diodes

    Science.gov (United States)

    Butler, J. K.; Kressel, H.; Ladany, I.

    1975-01-01

    Theoretical calculations are presented showing the relationship between the internal laser absorption and structural parameters appropriate for CW room-temperature lasers. These diodes have submicron-thick recombination regions, and very small spacings between the heat sink and the recombination region to minimize the thermal resistance. The optical loss is shown to be strongly dependent on the degree of radiation confinement to the active region. In particular, absorption in the surface GaAs layer providing the ohmic contact becomes very significant when the intermediate (AlGa)As layer is reduced below about 1 micron. It is further shown that excessive penetration into the GaAs regions gives rise to anomalies in the far-field radiation profiles in the direction perpendicular to the junction plane.

  5. Investigation of the optical property and structure of WO3 thin films with different sputtering depositions

    Science.gov (United States)

    Chen, Hsi-Chao; Jan, Der-Jun; Chen, Chien-Han; Huang, Kuo-Ting; Lo, Yen-Ming; Chen, Sheng-Hui

    2011-09-01

    The purpose of this research was to compare the optical properties and structure of tungsten oxide (WO3) thin films that was deposited by different sputtering depositions. WO3 thin films deposited by two different depositions of direct current (DC) magnetron sputtering and pulsed DC sputtering. A 99.95% WO3 target was used as the starting material for these depositions. These WO3 thin films were deposited on the ITO glass, PET and silicon substrate by different ratios of oxygen and argon. A shadow moiré interferometer would be introduced to measure the residual stress for PET substrate. RF magnetron sputtering had the large residual stress than the other's depositions. A Raman spectrum could exhibit the phase of oxidation of WO3 thin film by different depositions. At the ratio of oxygen and argon was about 1:1, and the WO3 thin films had the best oxidation. However, it was important at the change of the transmittance (ΔT = Tbleached - Tcolored) between the coloring and bleaching for the smart window. Therefore, we also found the WO3 thin films had the large variation of transmittance between the coloring and bleaching at the gas ratios of oxygen and argon of 1:1.

  6. Fabrication of Au/graphene oxide/Ag sandwich structure thin film and its tunable energetics and tailorable optical properties

    Directory of Open Access Journals (Sweden)

    Ruijin Hong

    2017-01-01

    Full Text Available Au/graphene oxide/Ag sandwich structure thin film was fabricated. The effects of graphene oxide (GO and bimetal on the structure and optical properties of metal silver films were investigated by X-ray diffraction (XRD, optical absorption, and Raman intensity measurements, respectively. Compared to silver thin film, Au/graphene oxide/Ag sandwich structure composite thin films were observed with wider optical absorption peak and enhanced absorption intensity. The Raman signal for Rhodamine B molecules based on the Au/graphene oxide/Ag sandwich nanostructure substrate were obviously enhanced due to the bimetal layer and GO layer with tunable absorption intensity and fluorescence quenching effects.

  7. Thickness Dependent Optical Properties of Sol-gel based MgF2 – TiO2 Thin Films

    Directory of Open Access Journals (Sweden)

    Siddarth Krishnaraja Achar

    2018-04-01

    Full Text Available MgF2 – TiO2 thin films were prepared by cost effective solgel technique onto glass substrates and optical parameters were determined by envelope technique. Thin films were characterized by optical transmission spectroscopy in the spectral range 290 – 1000 nm. The refractive index, extinction coefficient, Optical thickness and band gap dependency on thickness were evaluated. Thickness dependency of thin films showed direct allowed transition with band gap of 3.66 to 3.73 eV.

  8. Ultrafast gated imaging of laser produced plasmas using the optical Kerr effect

    International Nuclear Information System (INIS)

    Symes, D. R.; Wegner, U.; Ahlswede, H.-C.; Streeter, M. J. V.; Gallegos, P. L.; Divall, E. J.; Rajeev, P. P.; Neely, D.; Smith, R. A.

    2010-01-01

    Optical imaging is a versatile diagnostic for investigations of plasmas generated under intense laser irradiation. Electro-optic gating techniques operating on the >100 ps timescale are commonly used to reduce the amount of light detected from self-emission of hot plasma or improve the temporal resolution of the detector. The use of an optical Kerr gate enables a superior dynamic range and temporal resolution compared to electronically gated devices. The application of this method for enhanced imaging of laser produced plasmas with gate time ∼100 fs is demonstrated, and the possibility to produce a sub-10 fs, high dynamic range 'all optical' streak camera is discussed.

  9. Structural and optical properties of chlorinated plasma polymers

    International Nuclear Information System (INIS)

    Turri, Rafael; Davanzo, Celso U.; Schreiner, Wido; Dias da Silva, José Humberto; Appolinario, Marcelo Borgatto; Durrant, Steven F.

    2011-01-01

    Amorphous hydrogenated chlorinated carbon (a-C:H:Cl) films were produced by the plasma polymerization of chloroform–acetylene–argon mixtures in a radiofrequency plasma enhanced chemical vapor deposition system. The main parameter of interest was the proportion of chloroform in the feed, R C , which was varied from 0 to 80%. Deposition rates of 80 nm min −1 were typical for the chlorinated films. Infrared reflection–absorption spectroscopy revealed the presence of C–Cl groups in all the films produced with chloroform in the feed. X-ray photoelectron spectroscopy confirmed this finding, and revealed a saturation of the chlorine content at ∼ 47 at.% for R C ≥ 40%. The refractive index and optical gap, E 04 , of the films were roughly in the 1.6 to 1.7, and the 2.8 to 3.7 eV range. These values were calculated from transmission ultraviolet–visible-near infrared spectra. Chlorination leads to an increase in the water surface contact angle from ∼ 40° to ∼ 77°.

  10. Structural and optical properties of chlorinated plasma polymers

    Energy Technology Data Exchange (ETDEWEB)

    Turri, Rafael [Laboratorio de Plasmas Tecnologicos, Campus Experimental de Sorocaba, Universidade Estadual Paulista (UNESP), Avenida Tres de Marco 511, Alto de Boa Vista, 18087-180, Sorocaba, SP (Brazil); Davanzo, Celso U. [Instituto de Quimica, Universidade Estadual de Campinas, Campinas, SP (Brazil); Schreiner, Wido [Departamento de Fisica, Universidade Federal de Parana, PR (Brazil); Dias da Silva, Jose Humberto [Faculdade de Ciencias, Universidade Estadual Paulista (UNESP), Bauru, SP (Brazil); Appolinario, Marcelo Borgatto [Laboratorio de Plasmas Tecnologicos, Campus Experimental de Sorocaba, Universidade Estadual Paulista (UNESP), Avenida Tres de Marco 511, Alto de Boa Vista, 18087-180, Sorocaba, SP (Brazil); Durrant, Steven F., E-mail: steve@sorocaba.unesp.br [Laboratorio de Plasmas Tecnologicos, Campus Experimental de Sorocaba, Universidade Estadual Paulista (UNESP), Avenida Tres de Marco 511, Alto de Boa Vista, 18087-180, Sorocaba, SP (Brazil)

    2011-12-30

    Amorphous hydrogenated chlorinated carbon (a-C:H:Cl) films were produced by the plasma polymerization of chloroform-acetylene-argon mixtures in a radiofrequency plasma enhanced chemical vapor deposition system. The main parameter of interest was the proportion of chloroform in the feed, R{sub C}, which was varied from 0 to 80%. Deposition rates of 80 nm min{sup -1} were typical for the chlorinated films. Infrared reflection-absorption spectroscopy revealed the presence of C-Cl groups in all the films produced with chloroform in the feed. X-ray photoelectron spectroscopy confirmed this finding, and revealed a saturation of the chlorine content at {approx} 47 at.% for R{sub C} {>=} 40%. The refractive index and optical gap, E{sub 04}, of the films were roughly in the 1.6 to 1.7, and the 2.8 to 3.7 eV range. These values were calculated from transmission ultraviolet-visible-near infrared spectra. Chlorination leads to an increase in the water surface contact angle from {approx} 40 Degree-Sign to {approx} 77 Degree-Sign .

  11. Optical emission spectroscopy of carbon laser plasma ion source

    Science.gov (United States)

    Balki, Oguzhan; Rahman, Md. Mahmudur; Elsayed-Ali, Hani E.

    2018-04-01

    Carbon laser plasma generated by an Nd:YAG laser (wavelength 1064 nm, pulse width 7 ns, fluence 4-52 J cm-2) is studied by optical emission spectroscopy and ion time-of-flight. Up to C4+ ions are detected with the ion flux strongly dependent on the laser fluence. The increase in ion charge with the laser fluence is accompanied by observation of multicharged ion lines in the optical spectra. The time-integrated electron temperature Te is calculated from the Boltzmann plot using the C II lines at 392.0, 426.7, and 588.9 nm. Te is found to increase from ∼0.83 eV for a laser fluence of 22 J cm-2 to ∼0.90 eV for 40 J cm-2. The electron density ne is obtained from the Stark broadened profiles of the C II line at 392 nm and is found to increase from ∼ 2 . 1 × 1017cm-3 for 4 J cm-2 to ∼ 3 . 5 × 1017cm-3 for 40 J cm-2. Applying an external electric field parallel to the expanding plume shows no effect on the line emission intensities. Deconvolution of ion time-of-flight signal with a shifted Maxwell-Boltzmann distribution for each charge state results in an ion temperature Ti ∼4.7 and ∼6.0 eV for 20 and 36 J cm-2, respectively.

  12. Optical, structural and electrochromic behavior studies on nanocomposite thin film of aniline, o-toluidine and WO3

    Science.gov (United States)

    Najafi-Ashtiani, Hamed; Bahari, Ali

    2016-08-01

    In the field of materials for electrochromic (EC) applications much attention was paid to the derivatives of aniline. We report on the optical, structural and electrochromic properties of electrochromic thin film based on composite of WO3 nanoparticles and copolymer of aniline and o-toluidine prepared by electrochemical polymerization method on fluorine doped tin oxide (FTO) coated glass. The thin film was studied by X-ray diffraction (XRD) and Fourier transforms infrared (FTIR) spectroscopy. The morphology of prepared thin film was characterized by field emission scanning electron microscopy (FESEM), atomic force microscopy (AFM) and the thermal gravimetric analysis (TGA) as well. The optical spectra of nanocomposite thin film were characterized in the 200-900 nm wavelength range and EC properties of nanocomposite thin film were studied by cyclic voltammetry (CV). The calculation of optical band gaps of thin film exhibited that the thin film has directly allowed transition with the values of 2.63 eV on first region and 3.80 eV on second region. Dispersion parameters were calculated based on the single oscillator model. Finally, important parameters such as dispersion energy, oscillator energy and lattice dielectric constant were determined and compared with the data from other researchers. The nonlinear optical properties such as nonlinear optical susceptibility, nonlinear absorption coefficient and nonlinear refractive index were extracted. The obtained results of nanocomposite thin film can be useful for the optoelectronic applications.

  13. Structural and optical investigation of Te-based chalcogenide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Sharma, Rita, E-mail: reetasharma2012@gmail.com; Sharma, Shaveta; Thangaraj, R.; Mian, M. [Semiconductors Laboratory, Department of Physics, GND University, Amritsar (India); Chander, Ravi [Applied Science Deptt. Govt. Polytechnic College Amritsar (India); Kumar, Praveen [Department of Physics, DAV University, Sarmastipur, Jalandhar-144012 (India)

    2015-05-15

    We report the structural and optical properties of thermally evaporated Bi{sub 2}Te{sub 3}, In{sub 2}Te{sub 3} and InBiTe{sub 3} films by using X-ray diffraction, optical and Raman Spectroscopy techniques. The as-prepared thin films were found to be Semi-crystalline by X-ray diffraction. Particle Size and Strain has been calculated from XRD data. The optical constants, film thickness, refractive index and optical band gap (E{sub g}) has been reported for In{sub 2}Te{sub 3}, InBiTe{sub 3} films. Raman Spectroscopy was performed to investigate the effect of Bi, In, on lattice vibration and chemical bonding in Te based chalcogenide glassy alloys.

  14. Internal optical losses in very thin cw heterojunction laser diodes

    International Nuclear Information System (INIS)

    Butler, J.K.; Kressel, H.; Ladany, I.

    1975-01-01

    Theoretical calculations are presented showing the relationship between the internal laser absorption and structural parameters appropriate for cw room-temperature lasers. These diodes have submicron-thick recombination regions, and very small spacings between the heat sink and the recombination region to minimize the thermal resistance. The optical loss is shown to be strongly dependent on the degree of radiation confinement to the active region. In particular, absorption in the surface GaAs layer providing the ohmic contact becomes very significant when the intermediate (AlGa)As layer is reduced below about 1 μm. It is further shown that excessive penetration into the GaAs regions gives rise to anomalies in the far-field radiation profiles in the direction perpendicular to the junction plane. Proper design of the internal structure of the laser avoids large increases of the threshold current density as well as large decreases in the external differential quantum efficiency from interaction with the contact layer. The design curves presented can be used to predict the gain required at threshold for a broad range of structural parameters of interest in low-threshold laser design

  15. Optical and magneto-optical characterization of TbFeCo thin films in trilayer structures

    International Nuclear Information System (INIS)

    McGahan, W.A.; He, P.; Chen, L.; Bonafede, S.; Woollam, J.A.; Sequeda, F.; McDaniel, T.; Do, H.

    1991-01-01

    A series of TbFeCo films ranging in thickness from 100 to 800 A have been deposited in trilayer structures on silicon wafer substrates, with Si 3 N 4 being employed as the dielectric material. These films have been characterized both optically and magneto-optically by variable angle of incidence spectroscopic ellipsometry, normal angle of incidence reflectometry, and normal angle of incidence Kerr spectroscopy. From these measurements, the optical constants n and k have been determined for the TbFeCo films, as well as the magneto-optical constants Q1 and Q2. Results are presented that demonstrate the lack of dependence of these constants on the thickness of the TbFeCo film, and which can be used for calculating the expected optical and magneto-optical response of any multilayer structure containing similar TbFeCo films

  16. Optical characteristics of a RF DBD plasma jet in various A r / O 2 ...

    Indian Academy of Sciences (India)

    Using the optical emission spectrum analysis of the RF plasma jet, the excitation temperature is determined based on the Boltzmann plot method. The electron density in the plasma medium of the RF plasma jet is obtained by the Stark broadening of the hydrogen Balmer H β . It is mostly seen that, the radiation intensity of Ar ...

  17. RX emission of thin astrophysical plasma: interstellar medium and intra-cluster medium

    International Nuclear Information System (INIS)

    Arnaud, Monique

    1984-01-01

    As previous publications presented an important discrepancy of ionisation rates in astrophysical plasmas, this research thesis first reports a systematic study (by isoelectric sequence) of ionisation cross sections, based on measurements performed by mono-energetic beams, and on quantum assessments. The author proposes simple analytic fits for ionisation rates, for direct ionisation and for excitation-self-ionisation of ions of interest in astrophysics. He reports a critical review of recombination rates published in the literature, and the calculation of radiative recombination rates for different ions (hydrogen-like, helium-like, and lithium-like). Software have then been developed to determine the ionisation rate at the equilibrium and out of it for thin plasma, and to obtain ion fraction tables for different ions (H, He, C, N, O, Ne, Na, Mg, Al, Si, S, Ar, Ca, Fe, Ni). Then, a software integrating recent data on collisional excitation rates has been used to calculate the emission spectrum of a thin plasma with respect to temperature. These results are then used for the study of the interstellar medium and of supernovae remnants, and finally for the study of the intra-cluster medium [fr

  18. Research of precise pulse plasma arc powder welding technology of thin-walled inner hole parts

    Institute of Scientific and Technical Information of China (English)

    Li Zhanming; Du Xiaokun; Sun Xiaofeng; Song Wei

    2017-01-01

    The inner hole parts played an oriented or supporting role in engineering machinery and equipment,which are prone to appear surface damages such as wear,strain and corrosion.The precise pulse plasma arc powder welding method is used for surface damage repairing of inner hole parts in this paper.The working principle and process of the technology are illustrated,and the microstructure and property of repairing layer by precise pulse plasma powder welding and CO2 gas shielded welding are tested and observed by microscope,micro hardness tester and X-ray residual stress tester etc.Results showed that the substrate deformation of thin-walled inner hole parts samples by precise pulse plasma powder welding is relatively small.The repair layer and substrate is metallurgical bonding,the transition zones (including fusion zone and heat affected zone) are relatively narrow and the welding quality is good.h showed that the thin-walled inner hole parts can be repaired by this technology and equipment.

  19. Enhanced optical band-gap of ZnO thin films by sol-gel technique

    Energy Technology Data Exchange (ETDEWEB)

    Raghu, P., E-mail: dpr3270@gmail.com; Naveen, C. S.; Shailaja, J.; Mahesh, H. M., E-mail: hm-mahesh@rediffmail.com [Thin Film and Solar Cell Laboratory, Department of Electronic Science, Bangalore University, Jnanabharathi, Bangalore -560056 (India)

    2016-05-06

    Transparent ZnO thin films were prepared using different molar concentration (0.1 M, 0.2 M & 0.8 M) of zinc acetate on soda lime glass substrates by the sol-gel spin coating technique. The optical properties revealed that the transmittance found to decrease with increase in molar concentration. Absorption edge showed that the higher concentration film has increasingly red shifted. An increased band gap energy of the thin films was found to be direct allowed transition of ∼3.9 eV exhibiting their relevance for photovoltaic applications. The extinction coefficient analysis revealed maximum transmittance with negligible absorption coefficient in the respective wavelengths. The results of ZnO thin film prepared by sol-gel technique reveal its suitability for optoelectronics and as a window layer in solar cell applications.

  20. Effect of Etching on the Optical, Morphological Properties of Ag Thin Films for SERS Active Substrates

    Directory of Open Access Journals (Sweden)

    Desapogu Rajesh

    2013-01-01

    Full Text Available Structural, optical, and morphological properties of Ag thin films before and after etching were investigated by using X-ray diffraction, UV-Vis spectrophotometer, and field emission scanning electron microscopy (FESEM. The HNO3 roughened Ag thin films exhibit excellent enhancement features and better stability than pure Ag thin films. Further, the Ag nanostructures are covered with Rhodamine 6G (Rh6G and then tested with surface enhanced raman spectroscopy (SERS for active substrates. Etched Ag films were found to exhibit a strong SERS effect and excellent thermal stability. Hence, the present method is found to be useful in the development of plasmon-based analytical devices, especially SERS-based biosensors.

  1. Preparation of anatase TiO{sub 2} thin films by vacuum arc plasma evaporation

    Energy Technology Data Exchange (ETDEWEB)

    Miyata, Toshihiro [Optoelectronic Device System R and D Center, Kanazawa Institute of Technology, 7-1 Ohgigaoka, Nonoichi, Ishikawa 921-8501 (Japan)]. E-mail: tmiyata@neptune.kanazawa-it.ac.jp; Tsukada, Satoshi [Optoelectronic Device System R and D Center, Kanazawa Institute of Technology, 7-1 Ohgigaoka, Nonoichi, Ishikawa 921-8501 (Japan); Minami, Tadatsugu [Optoelectronic Device System R and D Center, Kanazawa Institute of Technology, 7-1 Ohgigaoka, Nonoichi, Ishikawa 921-8501 (Japan)

    2006-02-01

    Anatase titanium dioxide (TiO{sub 2}) thin films with high photocatalytic activity have been prepared with deposition rates as high as 16 nm/min by a newly developed vacuum arc plasma evaporation (VAPE) method using sintered TiO{sub 2} pellets as the source material. Highly transparent TiO{sub 2} thin films prepared at substrate temperatures from room temperature to 400 deg. C exhibited photocatalytic activity, regardless whether oxygen (O{sub 2}) gas was introduced during the VAPE deposition. The highest photocatalytic activity and photo-induced hydrophilicity were obtained in anatase TiO{sub 2} thin films prepared at 300 deg. C, which correlated to the best crystallinity of the films, as evidenced from X-ray diffraction. In addition, a transparent and conductive anatase TiO{sub 2} thin film with a resistivity of 2.6 x 10{sup -1} {omega} cm was prepared at a substrate temperature of 400 deg. C without the introduction of O{sub 2} gas.

  2. Optical constants and band edge of amorphous zinc oxide thin films

    International Nuclear Information System (INIS)

    Khoshman, Jebreel M.; Kordesch, Martin E.

    2007-01-01

    The optical characteristics of amorphous zinc oxide (a-ZnO) thin films grown by radio frequency reactive magnetron sputtering on various substrates at temperature -8 -0.32, respectively. The band edge of the films on Si (100) and quartz has been determined by spectroscopic ellipsometry (3.39 ± 0.05 eV) and spectrophotometric (3.35 ± 0.05 eV) methods, respectively. From the angle dependence of the p-polarized reflectivity we deduce a Brewster angle of 60.5 deg. Measurement of the polarized optical properties shows a high transmissivity (81%-99%) and low absorptivity (< 5%) in the visible and near infrared regions at different angles of incidence. Also, we found that there was a higher absorptivity for wavelength < 370 nm. This wavelength, ∼ 370 nm, therefore indicated that the band edge for a-ZnO thin films is about 3.35 eV

  3. Investigation of optical pump on dielectric tunability in PZT/PT thin film by THz spectroscopy.

    Science.gov (United States)

    Ji, Jie; Luo, Chunya; Rao, Yunkun; Ling, Furi; Yao, Jianquan

    2016-07-11

    The dielectric spectra of single-layer PbTiO3 (PT), single-layer PbZrxTi1-xO3 (PZT) and multilayer PZT/PT thin films under an external optical field were investigated at room temperature by time-domain terahertz (THz) spectroscopy. Results showed that the real part of permittivity increased upon application of an external optical field, which could be interpreted as hardening of the soft mode and increasing of the damping coefficient and oscillator strength. Furthermore, the central mode was observed in the three films. Among the dielectric property of the three thin films studied, the tunability of the PZT/PT superlattice was the largest.

  4. Physical and dispersive optical characteristics of ZrON/Si thin-film system

    Energy Technology Data Exchange (ETDEWEB)

    Wong, Yew Hoong [University of Malaya, Centre of Advanced Materials, Department of Mechanical Engineering, Faculty of Engineering, Kuala Lumpur (Malaysia); University of Malaya, Centre of Advanced Manufacturing and Material Processing, Kuala Lumpur (Malaysia); Atuchin, V.V. [Institute of Semiconductor Physics, SB RAS, Laboratory of Optical Materials and Structures, Novosibirsk (Russian Federation); Kruchinin, V.N. [Institute of Semiconductor Physics, SB RAS, Laboratory for Ellipsometry of Semiconductor Materials and Structures, Novosibirsk (Russian Federation); Cheong, Kuan Yew [Universiti Sains Malaysia, Electronic Materials Research Group, School of Materials and Mineral Resources Engineering, Engineering Campus, Seberang Perai Selatan, Penang (Malaysia)

    2014-06-15

    To date, the complex evaluation of physical and dispersive optical characteristics of the ZrON/Si film system has yet been reported. Hence, ZrON thin films have been formed on Si(100) substrates through oxidation/nitridation of sputtered metallic Zr in N{sub 2}O environment at 500, 700, and 900 C. Physical properties of the deposited films have been characterized by X-ray diffractometry (XRD), Fourier transform infrared (FTIR) spectroscopy, reflection high-energy electron diffraction (RHEED), and spectroscopic ellipsometry (SE). It has been shown that ZrON/Si thin films without optical absorption can be prepared by oxidation/nitridation reaction in N{sub 2}O environment at 700-900 C. (orig.)

  5. Electronic excitation induced modifications of optical and morphological properties of PCBM thin films

    Energy Technology Data Exchange (ETDEWEB)

    Sharma, T. [Department of Physics and Materials Research Centre, Malaviya National Institute of Technology, Jaipur 302017 (India); Singhal, R., E-mail: rsinghal.phy@mnit.ac.in [Department of Physics and Materials Research Centre, Malaviya National Institute of Technology, Jaipur 302017 (India); Vishnoi, R. [Department of Physics and Materials Research Centre, Malaviya National Institute of Technology, Jaipur 302017 (India); Department of Physics, Vardhman (P.G.) College, Bijnor 246701, U.P. (India); Sharma, P. [Department of Physics and Materials Research Centre, Malaviya National Institute of Technology, Jaipur 302017 (India); Patra, A.; Chand, S. [National Physical Laboratory, Dr. K. S. Krishnan Marg, New Delhi 110012 (India); Lakshmi, G.B.V.S. [Inter University Accelerator Centre, Post Box No. 10502, New Delhi 110067 (India); Biswas, S.K. [Department of Metallurgical and Materials Engineering, Malaviya National Institute of Technology, Jaipur 302017 (India)

    2016-07-15

    Highlights: • Spin casted PCBM thin films are irradiated by 90 MeV Ni{sup 7+} ion beam. • The decrease in band gap was found after irradiation. • There is a decomposition of molecular bond due to ion irradiation. • Roughness is also found to be dependent on incident ion fluence. - Abstract: Phenyl C{sub 61} butyric acid methyl ester (PCBM) is a fullerene derivative and most commonly used in organic photovoltaic devices both as electron acceptor and transporting material due to high electron mobility. PCBM is easy to spin caste on some substrate as it is soluble in chlorobenzene. In this study, the spin coated thin films of PCBM (on two different substrate, glass and double sided silicon) were irradiated using 90 MeV Ni{sup 7+} swift heavy ion beam at low fluences ranging from 1 × 10{sup 9} to 1 × 10{sup 11} ions/cm{sup 2} to study the effect of ion beam irradiation. The pristine and irradiated PCBM thin films were characterized by UV–visible absorption spectroscopy and fourier transform infrared spectroscopy (FTIR) to investigate the optical properties before and after irradiation. These thin films were further analyzed using atomic force microscopy (AFM) to investigate the morphological modifications which are induced by energetic ions. The variation in optical band gap after irradiation was measured using Tauc’s relation from UV–visible absorption spectra. A considerable change was observed with increasing fluence in optical band gap of irradiated thin films of PCBM with respect to the pristine film. The decrease in FTIR band intensity of C{sub 60} cage reveals the polymerization reaction due to high energy ion impact. The roughness is also found to be dependent on incident fluences. This study throws light for the application of PCBM in organic solar cells in form of ion irradiation induced nanowires of PCBM for efficient charge carrier transportation in active layer.

  6. Etching characteristic and mechanism of BST thin films using inductively coupled Cl2/Ar plasma with additive CF4 gas

    International Nuclear Information System (INIS)

    Kim, Gwan-Ha; Kim, Kyoung-Tae; Kim, Dong-Pyo; Kim, Chang-Il

    2004-01-01

    BST thin films were etched with inductively coupled CF 4 /(Cl 2 +Ar) plasmas. The maximum etch rate of the BST thin films was 53.6 nm/min for a 10% CF 4 to the Cl 2 /Ar gas mixture at RF power of 700 W, DC bias of -150 V, and chamber pressure of 2 Pa. Small addition of CF 4 to the Cl 2 /Ar mixture increased chemical effect. Consequently, the increased chemical effect caused the increase in the etch rate of the BST thin films. To clarify the etching mechanism, the surface reaction of the BST thin films was investigated by X-ray photoelectron spectroscopy

  7. Effect of Se addition on optical and electrical properties of chalcogenide CdSSe thin films

    Science.gov (United States)

    Hassanien, A. S.; Akl, Alaa A.

    2016-01-01

    Compositional dependence of optical and electrical properties of chalcogenide CdSxSe1-x (0.4 ≥ x ≥ 0.0 at. %) thin films was studied. Cadmium sulphoselenide films were deposited by thermal evaporation technique at vacuum (8.2 × 10-4 Pa) onto preheated glass substrates (523 K). The evaporation rate and film thickness were kept constant at 2.50 nm/s and 375 ± 5 nm, respectively. X-ray diffractograms showed that, the deposited films have the low crystalline nature. Energy dispersive analysis by X-ray (EDAX) was used to check the compositional elements of deposited films. The absorption coefficient was determined from transmission and reflection measurements at room temperature in the wavelength range 300-2500 nm. Optical density, skin depth, optical energy gap and Urbach's parameters of CdSSe thin films have also been estimated. The direct optical energy gap decreased from 2.248 eV to 1.749 eV when the ratio of Se-content was increased from 0.60 to 1.00 . Conduction band and valance band positions were evaluated. The temperature dependence of dc-electrical resistivity in the temperature range (293-450 K) has been reported. Three conduction regions due to different conduction mechanisms were detected. Electrical sheet resistance, activation energy and pre-exponential parameters were discussed. The estimated values of optical and electrical parameters were strongly dependent upon the Se-content in CdSSe matrix.

  8. All-optically tunable EIT-like dielectric metasurfaces hybridized with thin phase change material layers

    Science.gov (United States)

    Petronijevic, Emilija; Sibilia, Concita

    2017-05-01

    Electromagnetically induced transparency (EIT), a pump-induced narrow transparency window within the absorption region of a probe, had offered new perspectives in slow-light control in atomic physics. For applications in nanophotonics, the implementation on chip-scaled devices has later been obtained by mimicking this effect by metallic metamaterials. High losses in visible and near infrared range of metal-based metamaterialls have recently opened a new field of all-dielectric metamaterials; a proper configuration of high refractive index dielectric nanoresonators can mimick this effect without losses to get high Q, slow-light response. The next step would be the ability to tune their optical response, and in this work we investigate thin layers of phase change materials (PCM) for all-optical control of EIT-like all-dielectric metamaterials. PCM can be nonvolatively and reversibly switched between two stable phases that differ in optical properties by applying a visible laser pulse. The device is based on Si nanoresonators covered by a thin layer of PCM GeTe; optical and transient thermal simulations have been done to find and optimize the fabrication parameters and switching parameters such as the intensity and duration of the pulse. We have found that the EIT-like response can be switched on and off by applying the 532nm laser pulse to change the phase of the upper GeTe layer. We strongly believe that such approach could open new perspectives in all-optically controlled slow-light metamaterials.

  9. A nanohole in a thin metal film as an efficient nonlinear optical element

    Energy Technology Data Exchange (ETDEWEB)

    Konstantinova, T. V.; Melent' ev, P. N.; Afanas' ev, A. E. [Russian Academy of Sciences, Institute of Spectroscopy (Russian Federation); Kuzin, A. A.; Starikov, P. A.; Baturin, A. S. [Moscow Institute of Physics and Technology (Russian Federation); Tausenev, A. V.; Konyashchenko, A. V. [OOO Avesta-proekt (Russian Federation); Balykin, V. I., E-mail: balykin@isan.tyroitsk.ru [Russian Academy of Sciences, Institute of Spectroscopy (Russian Federation)

    2013-07-15

    The nonlinear optical properties of single nanoholes and nanoslits fabricated in gold and aluminum nanofilms are studied by third harmonic generation (THG). It is shown that the extremely high third-order optical susceptibility of aluminum and the presence of strong plasmon resonance of a single nanohole in an aluminum film make possible an efficient nanolocalized radiation source at the third harmonic frequency. The THG efficiency for a single nanohole in a thin metal film can be close to unity for an exciting laser radiation intensity on the order of 10{sup 13} W/cm{sup 2}.

  10. Uniformly thinned optical fibers produced via HF etching with spectral and microscopic verification.

    Science.gov (United States)

    Bal, Harpreet K; Brodzeli, Zourab; Dragomir, Nicoleta M; Collins, Stephen F; Sidiroglou, Fotios

    2012-05-01

    A method for producing uniformly thinned (etched) optical fibers is described, which can also be employed to etch optical fibers containing a Bragg grating (FBG) uniformly for evanescent-field-based sensing and other applications. Through a simple modification of this method, the fabrication of phase-shifted FBGs based on uneven etching is also shown. The critical role of how a fiber is secured is shown, and the success of the method is illustrated, by differential interference contrast microscopy images of uniformly etched FBGs. An etched FBG sensor for the monitoring of the refractive index of different glycerin solutions is demonstrated.

  11. Diffraction of stochastic electromagnetic fields by a hole in a thin film with real optical properties

    Science.gov (United States)

    Dorofeyev, Illarion

    2008-08-01

    The classical Kirchhoff theory of diffraction is extended to the case of real optical properties of a screen and its finite thickness. A spectral power density of diffracted electromagnetic fields by a hole in a thin film with real optical properties was calculated. The problem was solved by use of the vector Green theorems and related Green function of the boundary value problem. A spectral and spatial selectivity of the considered system was demonstrated. Diffracted patterns were calculated for the coherent and incoherent incident fields in case of holes array in a screen of perfect conductivity.

  12. Diffraction of stochastic electromagnetic fields by a hole in a thin film with real optical properties

    International Nuclear Information System (INIS)

    Dorofeyev, Illarion

    2008-01-01

    The classical Kirchhoff theory of diffraction is extended to the case of real optical properties of a screen and its finite thickness. A spectral power density of diffracted electromagnetic fields by a hole in a thin film with real optical properties was calculated. The problem was solved by use of the vector Green theorems and related Green function of the boundary value problem. A spectral and spatial selectivity of the considered system was demonstrated. Diffracted patterns were calculated for the coherent and incoherent incident fields in case of holes array in a screen of perfect conductivity

  13. A nanohole in a thin metal film as an efficient nonlinear optical element

    International Nuclear Information System (INIS)

    Konstantinova, T. V.; Melent’ev, P. N.; Afanas’ev, A. E.; Kuzin, A. A.; Starikov, P. A.; Baturin, A. S.; Tausenev, A. V.; Konyashchenko, A. V.; Balykin, V. I.

    2013-01-01

    The nonlinear optical properties of single nanoholes and nanoslits fabricated in gold and aluminum nanofilms are studied by third harmonic generation (THG). It is shown that the extremely high third-order optical susceptibility of aluminum and the presence of strong plasmon resonance of a single nanohole in an aluminum film make possible an efficient nanolocalized radiation source at the third harmonic frequency. The THG efficiency for a single nanohole in a thin metal film can be close to unity for an exciting laser radiation intensity on the order of 10 13 W/cm 2

  14. Modulation of ionization in the plasma column of an optical discharge

    International Nuclear Information System (INIS)

    Nastoyashchii, A.F.

    1981-01-01

    Stability of the ionization in the plasma column of an optical discharge is discussed. It is shown that a plasma filament formed by a long laser spike under optical discharge conditions may break up into a chain of bright luminous layers oriented in the direction of propagation of a laser beam and characterized by a higher gas ionization (''optical striations''). A nonlinear formulation of the problem is used to find the depth of modulation of the gas ionization

  15. A comparative study of the physical properties of Sb{sub 2}S{sub 3} thin films treated with N{sub 2} AC plasma and thermal annealing in N{sub 2}

    Energy Technology Data Exchange (ETDEWEB)

    Calixto-Rodriguez, M., E-mail: manuela@fis.unam.mx [Instituto de Ciencias Fisicas, Universidad Nacional Autonoma de Mexico, Apartado Postal 48-3, 62210, Cuernavaca, Morelos (Mexico); Martinez, H. [Instituto de Ciencias Fisicas, Universidad Nacional Autonoma de Mexico, Apartado Postal 48-3, 62210, Cuernavaca, Morelos (Mexico); Pena, Y. [Facultad de Ciencias Quimicas, Universidad Autonoma de Nuevo Leon, Pedro de Alba s/n, Cd. Universitaria, 66451, San Nicolas de los Garza, Nuevo Leon (Mexico); Flores, O. [Instituto de Ciencias Fisicas, Universidad Nacional Autonoma de Mexico, Apartado Postal 48-3, 62210, Cuernavaca, Morelos (Mexico); Esparza-Ponce, H.E. [Centro de Investigacion en Materiales Avanzados S.C., Laboratorio Nacional de Nanotecnologia, Miguel de Cervantes 120, Complejo Industrial Chihuahua, Chihuahua, Chihuahua 31109 (Mexico); Sanchez-Juarez, A.; Campos-Alvarez, J. [Centro de Investigacion en Energia, Universidad Nacional Autonoma de Mexico, Privada Xochicalco s/n, Col. Centro, 62580, Temixco, Morelos (Mexico); Reyes, P. [Facultad de Ciencias, Departamento de Fisica, Universidad Autonoma del Estado de Mexico, Instituto Literario 100, Col. Centro, 50000, Toluca, Estado de Mexico (Mexico)

    2010-02-01

    As-deposited antimony sulfide thin films prepared by chemical bath deposition were treated with nitrogen AC plasma and thermal annealing in nitrogen atmosphere. The as-deposited, plasma treated, and thermally annealed antimony sulfide thin films have been characterized by X-ray diffraction (XRD), energy dispersive X-ray spectroscopy, scanning electron microscopy, atomic force microscopy, UV-vis spectroscopy, and electrical measurements. The results have shown that post-deposition treatments modify the crystalline structure, the morphology, and the optoelectronic properties of Sb{sub 2}S{sub 3} thin films. X-ray diffraction studies showed that the crystallinity of the films was improved in both cases. Atomic force microscopy studies showed that the change in the film morphology depends on the post-deposition treatment used. Optical emission spectroscopy (OES) analysis revealed the plasma etching on the surface of the film, this fact was corroborated by the energy dispersive X-ray spectroscopy analysis. The optical band gap of the films (E{sub g}) decreased after post-deposition treatments (from 2.36 to 1.75 eV) due to the improvement in the grain sizes. The electrical resistivity of the Sb{sub 2}S{sub 3} thin films decreased from 10{sup 8} to 10{sup 6} {Omega}-cm after plasma treatments.

  16. Optical properties of titanium trisulphide (TiS3) thin films

    International Nuclear Information System (INIS)

    Ferrer, I.J.; Ares, J.R.; Clamagirand, J.M.; Barawi, M.; Sánchez, C.

    2013-01-01

    Titanium trisulphide thin films have been grown on quartz substrates by sulphuration of electron-beam evaporated Ti layers (d ∼ 300 nm) in a vacuum sealed ampoule in the presence of sulphur powder at 550 °C for different periods of time (1 to 20 h). Thin films were characterized by X-ray diffraction, energy dispersive analyses of X-ray and scanning electron microscopy. Results demonstrate that films are composed by monoclinic titanium trisulphide. Films show n-type conductivity with a relatively high resistivity (ρ ∼ 4 ± 2 Ω·cm) and high values of the Seebeck coefficient (− 600 μV/K) at room temperature. Values of the optical absorption coefficient about α ∼ 10 5 cm −1 , determined from reflectance and transmittance measurements, have been obtained at photon energies hυ > 2 eV. The absorption coefficient dependence on the photon energy in the range of 1.6–3.0 eV hints the existence of a direct transition with an energy gap between 1.35 and 1.50 eV. By comparing these results with those obtained from bulk TiS 3 , a direct transition with lower energy is also found which could have been hidden due to the low value of the absorption coefficient in this energy range. - Highlights: ► Thin films of TiS 3 have been obtained by sulphuration of Ti layers. ► Optical properties of TiS 3 thin films have been determined. ► Optical energy gap of TiS 3 has been obtained. ► Optical properties of bulk TiS 3 have been measured and compared with those of films

  17. Laser Deposition of Polymer Nanocomposite Thin Films and Hard Materials and Their Optical Characterization

    Science.gov (United States)

    2013-12-05

    visible light on instruments such as microscope tips and micro- surgical tools. Hard carbon known as diamond-like carbon films produced by pulsed laser ...visible (610 nm) LED source and a supplemental infra-red 980-nm laser diode (for the studies of the upconversion fluorescence). The basic package...5/2013 Final Performance Report 15 Sep 2012- 14 Sep 2013 LASER DEPOSITION OF POLYMER NANOCOMPOSITE THIN FILMS AND HARD MATERIALS AND THEIR OPTICAL

  18. Optical Properties and Surface Morphology of Nano-composite PMMA: TiO2 Thin Films

    International Nuclear Information System (INIS)

    Lyly Nyl Ismail; Ahmad Fairoz Aziz; Habibah Zulkefle

    2011-01-01

    There are two nano-composite PMMA: TiO 2 solutions were prepared in this research. First solution is nano-composite PMMA commercially available TiO 2 nanopowder and the second solution is nano-composite PMMA with self-prepared TiO 2 powder. The self-prepared TiO 2 powder is obtained by preparing the TiO 2 sol-gel. Solvo thermal method were used to dry the TiO 2 sol-gel and obtained TiO 2 crystal. Ball millers were used to grind the TiO 2 crystal in order to obtained nano sized powder. Triton-X was used as surfactant to stabilizer the composite between PMMA: TiO 2 . Besides comparing the nano-composite solution, we also studied the effect of the thin films thickness on the optical properties and surface morphology of the thin films. The thin films were deposited by sol-gel spin coating method on glass substrates. The optical properties and surface characterization were measured with UV-VIS spectrometer equipment and atomic force microscopy (AFM). The result showed that nano-composite PMMA with self prepared TiO 2 give high optical transparency than nano-composite PMMA with commercially available TiO 2 nano powder. The results also indicate as the thickness is increased the optical transparency are decreased. Both AFM images showed that the agglomerations of TiO 2 particles are occurred on the thin films and the surface roughness is increased when the thickness is increased. High agglomeration particles exist in the AFM images for nano-composite PMMA: TiO 2 with TiO 2 nano powder compare to the other nano-composite solution. (author)

  19. Optical Waveguide Lightmode Spectroscopy (OWLS) as a Sensor for Thin Film and Quantum Dot Corrosion

    OpenAIRE

    Yu, Hao; Eggleston, Carrick M.; Chen, Jiajun; Wang, Wenyong; Dai, Qilin; Tang, Jinke

    2012-01-01

    Optical waveguide lightmode spectroscopy (OWLS) is usually applied as a biosensor system to the sorption-desorption of proteins to waveguide surfaces. Here, we show that OWLS can be used to monitor the quality of oxide thin film materials and of coatings of pulsed laser deposition synthesized CdSe quantum dots (QDs) intended for solar energy applications. In addition to changes in data treatment and experimental procedure, oxide- or QD-coated waveguide sensors must be synthesized. We synthesi...

  20. Use of thin films obtained by electron beam evaporation as optical wave guide

    International Nuclear Information System (INIS)

    Nobre, S.A.A.; Oliveira, C.A.S. de; Freire, G.F.de O.

    1986-01-01

    Thin films evaporated by electron beam for the fabrication of planar optical waveguides were used. The tested materials were aluminium oxide (Al 2 O 3 ) and tantalum pentoxide (Ta 2 O 5 ). The effect of annealing conditions on the film absorption was investigated for Ta 2 O 5 . The Al 2 O 3 films were characterized by the method of guided modes, in terms of refractive index measurements and film thickness. Atenuation measurements were also carried out. (M.C.K.) [pt

  1. An IRIS Optically Thin View of the Dynamics of the Solar Chromosphere

    Science.gov (United States)

    Carlsson, M.

    2017-12-01

    We analyze the formation of the O I 1356 and Cl I 1351 lines and show that they are formed in the mid-chromosphere and are optically thin. Their non-thermal line-widths are thus a direct measure of the velocity field along the line of sight. We use this insight to analyze a large set of observations from the Interface Region Imaging Spectrograph (IRIS) to study the dynamics of the Solar Chromosphere.

  2. Quenching of surface traps in Mn doped ZnO thin films for enhanced optical transparency

    International Nuclear Information System (INIS)

    Ilyas, Usman; Rawat, R.S.; Roshan, G.; Tan, T.L.; Lee, P.; Springham, S.V.; Zhang, Sam; Fengji Li; Chen, R.; Sun, H.D.

    2011-01-01

    The structural and photoluminescence analyses were performed on un-doped and Mn doped ZnO thin films grown on Si (1 0 0) substrate by pulsed laser deposition (PLD) and annealed at different post-deposition temperatures (500-800 deg. C). X-ray diffraction (XRD), employed to study the structural properties, showed an improved crystallinity at elevated temperatures with a consistent decrease in the lattice parameter 'c'. The peak broadening in XRD spectra and the presence of Mn 2p3/2 peak at ∼640 eV in X-ray Photoelectron Spectroscopic (XPS) spectra of the doped thin films confirmed the successful incorporation of Mn in ZnO host matrix. Extended near band edge emission (NBE) spectra indicated the reduction in the concentration of the intrinsic surface traps in comparison to the doped ones resulting in improved optical transparency. Reduced deep level emission (DLE) spectra in doped thin films with declined PL ratio validated the quenching of the intrinsic surface traps thereby improving the optical transparency and the band gap, essential for optoelectronic and spintronic applications. Furthermore, the formation and uniform distribution of nano-sized grains with improved surface features of Mn-doped ZnO thin films were observed in Field Emission Scanning Electron Microscopy (FESEM) images.

  3. Optical and electrical properties of TiOPc doped Alq{sub 3} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Ramar, M.; Suman, C. K., E-mail: sumanck@nplindia.org; Tyagi, Priyanka; Srivastava, R. [CSIR-Network of Institutes for Solar Energy CSIR - National Physical Laboratory, Dr. K. S. Krishnan Marg, New Delhi -110012 (India)

    2015-06-24

    The Titanyl phthalocyanine (TiOPc) was doped in Tris (8-hydroxyquinolinato) aluminum (Alq3) with different concentration. The thin film of optimized doping concentration was studied extensively for optical and electrical properties. The optical properties, studied using ellipsometry, absorption and photoluminescence. The absorption peak of Alq{sub 3} and TiOPc was observed at 387 nm and 707 nm and the photo-luminescence intensity (PL) peak of doped thin film was observed at 517 nm. The DC and AC electrical properties of the thin film were studied by current density-voltage (J-V) characteristics and impedance over a frequency range of 100 Hz - 1 MHz. The electron mobility calculated from trap-free space-charge limited region (SCLC) is 0.17×10{sup −5} cm{sup 2}/Vs. The Cole-Cole plots shows that the TiOPc doped Alq{sub 3} thin film can be represented by a single parallel resistance R{sub P} and capacitance C{sub P} network with a series resistance R{sub S} (10 Ω). The value of R{sub P} and C{sub P} at zero bias was 1587 Ω and 2.568 nF respectively. The resistance R{sub P} decreases with applied bias whereas the capacitance C{sub P} remains almost constant.

  4. Optical and structural properties of thin films of ZnO at elevated temperature

    International Nuclear Information System (INIS)

    Kayani, Zohra N.; Afzal, Tosif; Riaz, Saira; Naseem, Shahzad

    2014-01-01

    Highlights: • Thin films of ZnO are prepared on glass substrates using dip-coating. • The X-ray diffraction showed that films are crystalline. • Optical measurements show that the film possesses high transmittance in visible region. • The transmission decreased with increased withdrawal speed. • The films has direct band gap in range 3.78-3.48 eV. - Abstract: Zinc oxide (ZnO) thin films were prepared on glass substrate by sol–gel dip-coating method. The paper presents the properties of zinc oxide thin films deposited on soda-lime-glass substrate via dip-coating technique, using zinc acetate dehydrate and ethanol as raw materials. The effect of withdrawal speed on the crystalline structure, surface morphology and optical properties of the thin films has been investigated using XRD, SEM and UV–Vis spectrophotometer. X-ray diffraction study shows that all the films have hexagonal wurtzite structure with preferred orientation in (0 0 2) direction and transmission spectra showed highly transparent films with band gap ranging from 3.78 to 3.48 eV

  5. Optical phantoms of varying geometry based on thin building blocks with controlled optical properties

    NARCIS (Netherlands)

    de Bruin, Daniel M.; Bremmer, Rolf H.; Kodach, Vitali M.; de Kinkelder, Roy; van Marle, Jan; van Leeuwen, Ton G.; Faber, Dirk J.

    2010-01-01

    Current innovations in optical imaging, measurement techniques, and data analysis algorithms express the need for reliable testing and comparison methods. We present the design and characterization of silicone elastomer-based optical phantoms. Absorption is included by adding a green dye and

  6. Practice-oriented optical thin film growth simulation via multiple scale approach

    Energy Technology Data Exchange (ETDEWEB)

    Turowski, Marcus, E-mail: m.turowski@lzh.de [Laser Zentrum Hannover e.V., Hollerithallee 8, Hannover 30419 (Germany); Jupé, Marco [Laser Zentrum Hannover e.V., Hollerithallee 8, Hannover 30419 (Germany); QUEST: Centre of Quantum Engineering and Space-Time Research, Leibniz Universität Hannover (Germany); Melzig, Thomas [Fraunhofer Institute for Surface Engineering and Thin Films IST, Bienroder Weg 54e, Braunschweig 30108 (Germany); Moskovkin, Pavel [Research Centre for Physics of Matter and Radiation (PMR-LARN), University of Namur (FUNDP), 61 rue de Bruxelles, Namur 5000 (Belgium); Daniel, Alain [Centre for Research in Metallurgy, CRM, 21 Avenue du bois Saint Jean, Liège 4000 (Belgium); Pflug, Andreas [Fraunhofer Institute for Surface Engineering and Thin Films IST, Bienroder Weg 54e, Braunschweig 30108 (Germany); Lucas, Stéphane [Research Centre for Physics of Matter and Radiation (PMR-LARN), University of Namur (FUNDP), 61 rue de Bruxelles, Namur 5000 (Belgium); Ristau, Detlev [Laser Zentrum Hannover e.V., Hollerithallee 8, Hannover 30419 (Germany); QUEST: Centre of Quantum Engineering and Space-Time Research, Leibniz Universität Hannover (Germany)

    2015-10-01

    Simulation of the coating process is a very promising approach for the understanding of thin film formation. Nevertheless, this complex matter cannot be covered by a single simulation technique. To consider all mechanisms and processes influencing the optical properties of the growing thin films, various common theoretical methods have been combined to a multi-scale model approach. The simulation techniques have been selected in order to describe all processes in the coating chamber, especially the various mechanisms of thin film growth, and to enable the analysis of the resulting structural as well as optical and electronic layer properties. All methods are merged with adapted communication interfaces to achieve optimum compatibility of the different approaches and to generate physically meaningful results. The present contribution offers an approach for the full simulation of an Ion Beam Sputtering (IBS) coating process combining direct simulation Monte Carlo, classical molecular dynamics, kinetic Monte Carlo, and density functional theory. The simulation is performed exemplary for an existing IBS-coating plant to achieve a validation of the developed multi-scale approach. Finally, the modeled results are compared to experimental data. - Highlights: • A model approach for simulating an Ion Beam Sputtering (IBS) process is presented. • In order to combine the different techniques, optimized interfaces are developed. • The transport of atomic species in the coating chamber is calculated. • We modeled structural and optical film properties based on simulated IBS parameter. • The modeled and the experimental refractive index data fit very well.

  7. Optical properties of silver sulphide thin films formed on evaporated Ag by a simple sulphurization method

    Energy Technology Data Exchange (ETDEWEB)

    Barrera-Calva, E., E-mail: ebc@xanum.uam.m [Departamento de Ingenieria de Procesos e hidraulica, Universidad Autonoma Metropolitana - Iztapalapa, Av. Purisima Esq. Michoacan, Col. Vicentina, Mexico, D.F., 09340 (Mexico); Ortega-Lopez, M.; Avila-Garcia, A.; Matsumoto-Kwabara, Y. [Departamento de Ingenieria Electrica, Centro de Investigacion y de Estudios Avanzados del IPN, Mexico DF 07360 (Mexico)

    2010-01-31

    Silver sulphide (Ag{sub 2}S) thin films were grown on the surface of silver films (Ag) deposited on glass substrate by using a simple chemical sulphurization method. According to X-ray diffraction analysis, the Ag{sub 2}S thin films display low intensity peaks at 34.48{sup o}, 36.56{sup o}, and 44.28{sup o}, corresponding to diffraction from (100), (112) and (103) planes of the acanthite phase (monoclinic). A model of the type Ag{sub 2}S/Ag/glass was deduced from spectroscopic ellipsometric measurements. Also, the optical constants (n, k) of the system were determined. Furthermore, the optical properties as solar selective absorber for collector applications were assessed. The optical reflectance of the Ag{sub 2}S/Ag thin film systems exhibits the expected behavior for an ideal selective absorber, showing a low reflectance in the wavelength range below 2 {mu}m and a high reflectance for wavelengths higher than that value. An absorptance about 70% and an emittance about 3% or less were calculated for several samples.

  8. Electrical and Optical Properties of GeSi−:H Thin Films Prepared by Thermal Evaporation Method

    Directory of Open Access Journals (Sweden)

    A. A. J. Al-Douri

    2010-01-01

    Full Text Available Thin a-GeSi1−:H films were grown successfully by fabrication of designated ingot followed by evaporation onto glass slides. A range of growth conditions, Ge contents, dopant concentration (Al and As, and substrate temperature, were employed. Stoichiometry of the thin films composition was confirmed using standard surface techniques. The structure of all films was amorphous. Film composition and deposition parameters were investigated for their bearing on film electrical and optical properties. More than one transport mechanism is indicated. It was observed that increasing substrate temperature, Ge contents, and dopant concentration lead to a decrease in the optical energy gap of those films. The role of the deposition conditions on values of the optical constants was determined. Accordingly, models of the density of states for the Ge0.5Si0.5:H thin films as pure, doped with 3.5% of Al (p-type and that doped with 3.5% As (n-type, were proposed.

  9. Studies on the Optical Properties and Surface Morphology of Cobalt Phthalocyanine Thin Films

    Directory of Open Access Journals (Sweden)

    Benny Joseph

    2008-01-01

    Full Text Available Thin films of Cobalt Phthalocyanine (CoPc are fabricated at a base pressure of 10-5 m.bar using Hind-Hivac thermal evaporation plant. The films are deposited on to glass substrates at various temperatures 318, 363, 408 and 458K. The optical absorption spectra of these thin films are measured. The present studies reveal that the optical band gap energies of CoPc thin films are almost same on substrate temperature variation. The structure and surface morphology of the films deposited on glass substrates of temperatures 303, 363 and 458K are studied using X-ray diffractograms and Scanning Electron Micrographs (SEM, which show that there is a change in the crystallinity and surface morphology due to change in the substrate temperatures. Full width at half maximum (FWHM intensity of the diffraction peaks is also found reduced with increasing substrate temperatures. Scanning electron micrographs show that these crystals are needle like, which are interconnected at high substrate temperatures. The optical band gap energy is almost same on substrate temperature variation. Trap energy levels are also observed for these films.

  10. Growth of KNN thin films for non-linear optical applications

    International Nuclear Information System (INIS)

    Sharma, Shweta; Gupta, Reema; Gupta, Vinay; Tomar, Monika

    2018-01-01

    Two-wave mixing is a remarkable area of research in the field of non-linear optics, finding various applications in the development of opto-electronic devices, photorefractive waveguides, real time holography, etc. Non-linear optical properties of ferroelectric potassium sodium niobate (KNN) thin films have been interrogated using two-wave mixing phenomenon. Regarding this, a-axis oriented K 0.35 Na (1-0.35) NbO 3 thin films were successfully grown on epitaxial matched (100) SrTiO 3 substrate using pulsed laser deposition (PLD) technique. The uniformly distributed Au micro-discs of 200 μm diameter were integrated with KNN/STO thin film to study the plasmonic enhancement in the optical response. Beam amplification has been observed as a result of the two-wave mixing. This is due to the alignment of ferroelectric domains in KNN films and the excitement of plasmons at the metal-dielectric (Au-KNN) interface. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  11. Optically thin core accretion: how planets get their gas in nearly gas-free discs

    Science.gov (United States)

    Lee, Eve J.; Chiang, Eugene; Ferguson, Jason W.

    2018-05-01

    Models of core accretion assume that in the radiative zones of accreting gas envelopes, radiation diffuses. But super-Earths/sub-Neptunes (1-4 R⊕, 2-20 M⊕) point to formation conditions that are optically thin: their modest gas masses are accreted from short-lived and gas-poor nebulae reminiscent of the transparent cavities of transitional discs. Planetary atmospheres born in such environments can be optically thin to both incident starlight and internally generated thermal radiation. We construct time-dependent models of such atmospheres, showing that super-Earths/sub-Neptunes can accrete their ˜1 per cent-by-mass gas envelopes, and super-puffs/sub-Saturns their ˜20 per cent-by-mass envelopes, over a wide range of nebular depletion histories requiring no fine tuning. Although nascent atmospheres can exhibit stratospheric temperature inversions affected by atomic Fe and various oxides that absorb strongly at visible wavelengths, the rate of gas accretion remains controlled by the radiative-convective boundary (rcb) at much greater pressures. For dusty envelopes, the temperature at the rcb Trcb ≃ 2500 K is still set by H2 dissociation; for dust-depleted envelopes, Trcb tracks the temperature of the visible or thermal photosphere, whichever is deeper, out to at least ˜5 au. The rate of envelope growth remains largely unchanged between the old radiative diffusion models and the new optically thin models, reinforcing how robustly super-Earths form as part of the endgame chapter in disc evolution.

  12. Electrical and Optical Properties of Fluorine Doped Tin Oxide Thin Films Prepared by Magnetron Sputtering

    Directory of Open Access Journals (Sweden)

    Ziad Y. Banyamin

    2014-10-01

    Full Text Available Fluorine doped tin oxide (FTO coatings have been prepared using the mid-frequency pulsed DC closed field unbalanced magnetron sputtering technique in an Ar/O2 atmosphere using blends of tin oxide and tin fluoride powder formed into targets. FTO coatings were deposited with a thickness of 400 nm on glass substrates. No post-deposition annealing treatments were carried out. The effects of the chemical composition on the structural (phase, grain size, optical (transmission, optical band-gap and electrical (resistivity, charge carrier, mobility properties of the thin films were investigated. Depositing FTO by magnetron sputtering is an environmentally friendly technique and the use of loosely packed blended powder targets gives an efficient means of screening candidate compositions, which also provides a low cost operation. The best film characteristics were achieved using a mass ratio of 12% SnF2 to 88% SnO2 in the target. The thin film produced was polycrystalline with a tetragonal crystal structure. The optimized conditions resulted in a thin film with average visible transmittance of 83% and optical band-gap of 3.80 eV, resistivity of 6.71 × 10−3 Ω·cm, a carrier concentration (Nd of 1.46 × 1020 cm−3 and a mobility of 15 cm2/Vs.

  13. Growth of KNN thin films for non-linear optical applications

    Energy Technology Data Exchange (ETDEWEB)

    Sharma, Shweta; Gupta, Reema; Gupta, Vinay [Department of Physics and Astrophysics, University of Delhi (India); Tomar, Monika [Department of Physics, Miranda House University of Delhi (India)

    2018-02-15

    Two-wave mixing is a remarkable area of research in the field of non-linear optics, finding various applications in the development of opto-electronic devices, photorefractive waveguides, real time holography, etc. Non-linear optical properties of ferroelectric potassium sodium niobate (KNN) thin films have been interrogated using two-wave mixing phenomenon. Regarding this, a-axis oriented K{sub 0.35}Na{sub (1-0.35)}NbO{sub 3} thin films were successfully grown on epitaxial matched (100) SrTiO{sub 3} substrate using pulsed laser deposition (PLD) technique. The uniformly distributed Au micro-discs of 200 μm diameter were integrated with KNN/STO thin film to study the plasmonic enhancement in the optical response. Beam amplification has been observed as a result of the two-wave mixing. This is due to the alignment of ferroelectric domains in KNN films and the excitement of plasmons at the metal-dielectric (Au-KNN) interface. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  14. Changes in optical properties of polystyrene thin films by proton beam irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Hwang, Sung Hyun; Jung, Jin Mook; Choi, Jae Hak [Dept. of of Polymer Science and Engineering, Chungnam National University, Daejeon (Korea, Republic of); Jung, Chan Hee; Hwang, In Tae; Shin, Jun Hwa [Research Division for Industry and Environment, Advanced Radiation Technology Institute, Korea Atomic Energy Research Institute, Jeongeup(Korea, Republic of)

    2017-06-15

    In this study, changes in optical properties of polystyrene (PS) thin films by proton irradiation were investigated. PS thin films were irradiated with 150 keV proton ions at fluences ranging from 1 × 10{sup 15} to 1 × 10{sup 16} ions cm{sup -2}. The chemical structures and optical properties of proton beam-irradiated PS thin films were investigated by using a FT-IR spectrometer, an UVvis spectrophotometer, a photoluminescence (PL) and a fluorescence microscope. The results of the chemical structure analysis revealed that chemical functional groups, such as OH, C=O, and C=C, were formed in the PS films due to the oxidation and formation of carbon clusters by proton beam irradiation. The PL emission was generated and gradually red-shifted with an increasing fluence due to the higher formation of sp2 carbon clusters by proton beam irradiation. The highest PL intensity was obtained at a fluence of 5×10{sup 15} ions cm{sup -2}. The optical band gap of PS calculated by using a Tauc’s plot decreased with increasing the fluence due to the formation of sp2 carbon clusters by proton beam irradiation.

  15. Electronic and optical properties of nanocrystalline WO3 thin films studied by optical spectroscopy and density functional calculations

    International Nuclear Information System (INIS)

    Johansson, Malin B; Niklasson, Gunnar A; Österlund, Lars; Baldissera, Gustavo; Persson, Clas; Valyukh, Iryna; Arwin, Hans

    2013-01-01

    The optical and electronic properties of nanocrystalline WO 3 thin films prepared by reactive dc magnetron sputtering at different total pressures (P tot ) were studied by optical spectroscopy and density functional theory (DFT) calculations. Monoclinic films prepared at low P tot show absorption in the near infrared due to polarons, which is attributed to a strained film structure. Analysis of the optical data yields band-gap energies E g ≈ 3.1 eV, which increase with increasing P tot by 0.1 eV, and correlate with the structural modifications of the films. The electronic structures of triclinic δ-WO 3 , and monoclinic γ- and ε-WO 3 were calculated using the Green function with screened Coulomb interaction (GW approach), and the local density approximation. The δ-WO 3 and γ-WO 3 phases are found to have very similar electronic properties, with weak dispersion of the valence and conduction bands, consistent with a direct band-gap. Analysis of the joint density of states shows that the optical absorption around the band edge is composed of contributions from forbidden transitions (>3 eV) and allowed transitions (>3.8 eV). The calculations show that E g in ε-WO 3 is higher than in the δ-WO 3 and γ-WO 3 phases, which provides an explanation for the P tot dependence of the optical data. (paper)

  16. Electronic and optical properties of nanocrystalline WO3 thin films studied by optical spectroscopy and density functional calculations

    Science.gov (United States)

    Johansson, Malin B.; Baldissera, Gustavo; Valyukh, Iryna; Persson, Clas; Arwin, Hans; Niklasson, Gunnar A.; Österlund, Lars

    2013-05-01

    The optical and electronic properties of nanocrystalline WO3 thin films prepared by reactive dc magnetron sputtering at different total pressures (Ptot) were studied by optical spectroscopy and density functional theory (DFT) calculations. Monoclinic films prepared at low Ptot show absorption in the near infrared due to polarons, which is attributed to a strained film structure. Analysis of the optical data yields band-gap energies Eg ≈ 3.1 eV, which increase with increasing Ptot by 0.1 eV, and correlate with the structural modifications of the films. The electronic structures of triclinic δ-WO3, and monoclinic γ- and ε-WO3 were calculated using the Green function with screened Coulomb interaction (GW approach), and the local density approximation. The δ-WO3 and γ-WO3 phases are found to have very similar electronic properties, with weak dispersion of the valence and conduction bands, consistent with a direct band-gap. Analysis of the joint density of states shows that the optical absorption around the band edge is composed of contributions from forbidden transitions (>3 eV) and allowed transitions (>3.8 eV). The calculations show that Eg in ε-WO3 is higher than in the δ-WO3 and γ-WO3 phases, which provides an explanation for the Ptot dependence of the optical data.

  17. Properties of nanostructured undoped ZrO{sub 2} thin film electrolytes by plasma enhanced atomic layer deposition for thin film solid oxide fuel cells

    Energy Technology Data Exchange (ETDEWEB)

    Cho, Gu Young; Noh, Seungtak; Lee, Yoon Ho; Cha, Suk Won, E-mail: ybkim@hanyang.ac.kr, E-mail: swcha@snu.ac.kr [Department of Mechanical and Aerospace Engineering, Seoul National University, 1 Gwanak-ro, Gwanak-gu, Seoul 151-744 (Korea, Republic of); Ji, Sanghoon [Graduate School of Convergence Science and Technology, Seoul National University, Iui-dong, Yeongtong-gu, Suwon 443-270 (Korea, Republic of); Hong, Soon Wook; Koo, Bongjun; Kim, Young-Beom, E-mail: ybkim@hanyang.ac.kr, E-mail: swcha@snu.ac.kr [Department of Mechanical Engineering, Hanyang University, 222 Wangsimni-ro, Seongdong-gu, Seoul 133-791 (Korea, Republic of); An, Jihwan [Manufacturing Systems and Design Engineering Programme, Seoul National University of Science and Technology, 232 Gongneung-ro, Nowon-gu, Seoul 139-743 (Korea, Republic of)

    2016-01-15

    Nanostructured ZrO{sub 2} thin films were prepared by thermal atomic layer deposition (ALD) and by plasma-enhanced atomic layer deposition (PEALD). The effects of the deposition conditions of temperature, reactant, plasma power, and duration upon the physical and chemical properties of ZrO{sub 2} films were investigated. The ZrO{sub 2} films by PEALD were polycrystalline and had low contamination, rough surfaces, and relatively large grains. Increasing the plasma power and duration led to a clear polycrystalline structure with relatively large grains due to the additional energy imparted by the plasma. After characterization, the films were incorporated as electrolytes in thin film solid oxide fuel cells, and the performance was measured at 500 °C. Despite similar structure and cathode morphology of the cells studied, the thin film solid oxide fuel cell with the ZrO{sub 2} thin film electrolyte by the thermal ALD at 250 °C exhibited the highest power density (38 mW/cm{sup 2}) because of the lowest average grain size at cathode/electrolyte interface.

  18. Nanostructured plasma etched, magnetron sputtered nanolaminar Cr2AlC MAX phase thin films

    International Nuclear Information System (INIS)

    Grieseler, Rolf; Hähnlein, Bernd; Stubenrauch, Mike; Kups, Thomas; Wilke, Marcus; Hopfeld, Marcus; Pezoldt, Jörg; Schaaf, Peter

    2014-01-01

    The knowledge of the mechanical properties of new materials determines essentially their usability and functionality when used in micro- and nanostructures. MAX phases are new and highly interesting materials due to their unique combination of materials properties. In this article a new method for producing the Cr 2 AlC MAX phase is presented. Thin film elemental multilayer deposition and subsequent rapid thermal annealing forms the MAX phase within seconds. Additionally, free standing microstructures (beams and cantilevers) based on this MAX phase films are prepared by plasma etching. The mechanical properties of these MAX phase microstructures are investigated

  19. Optical constants of CH3NH3PbBr3 perovskite thin films measured by spectroscopic ellipsometry

    KAUST Repository

    Alias, Mohd Sharizal

    2016-07-14

    The lack of optical constants information for hybrid perovskite of CH3NH3PbBr3 in thin films form can delay the progress of efficient LED or laser demonstration. Here, we report on the optical constants (complex refractive index and dielectric function) of CH3NH3PbBr3 perovskite thin films using spectroscopic ellipsometry. Due to the existence of voids, the refractive index of the thin films is around 8% less than the single crystals counterpart. The energy bandgap is around 2.309 eV as obtained from photoluminescence and spectrophotometry spectra, and calculated from the SE analysis. The precise measurement of optical constants will be useful in designing optical devices using CH3NH3PbBr3 thin films.

  20. Hydrogen plasma treatment for improved conductivity in amorphous aluminum doped zinc tin oxide thin films

    Directory of Open Access Journals (Sweden)

    M. Morales-Masis

    2014-09-01

    Full Text Available Improving the conductivity of earth-abundant transparent conductive oxides (TCOs remains an important challenge that will facilitate the replacement of indium-based TCOs. Here, we show that a hydrogen (H2-plasma post-deposition treatment improves the conductivity of amorphous aluminum-doped zinc tin oxide while retaining its low optical absorption. We found that the H2-plasma treatment performed at a substrate temperature of 50 °C reduces the resistivity of the films by 57% and increases the absorptance by only 2%. Additionally, the low substrate temperature delays the known formation of tin particles with the plasma and it allows the application of the process to temperature-sensitive substrates.

  1. Hydrogen plasma treatment for improved conductivity in amorphous aluminum doped zinc tin oxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Morales-Masis, M., E-mail: monica.moralesmasis@epfl.ch; Ding, L.; Dauzou, F. [Photovoltaics and Thin-Film Electronics Laboratory (PVLab), Institute of Microengineering (IMT), Ecole Polytechnique Fédérale de Lausanne - EPFL, Rue de la Maladière 71b, CH-2002 Neuchatel (Switzerland); Jeangros, Q. [Interdisciplinary Centre for Electron Microscopy, Ecole Polytechnique Fédérale de Lausanne (EPFL), Lausanne (Switzerland); Hessler-Wyser, A. [Photovoltaics and Thin-Film Electronics Laboratory (PVLab), Institute of Microengineering (IMT), Ecole Polytechnique Fédérale de Lausanne - EPFL, Rue de la Maladière 71b, CH-2002 Neuchatel (Switzerland); Interdisciplinary Centre for Electron Microscopy, Ecole Polytechnique Fédérale de Lausanne (EPFL), Lausanne (Switzerland); Nicolay, S. [Centre Suisse d’Electronique et de Microtechnique (CSEM) SA, Rue Jaquet-Droz 1, CH-2002 Neuchatel (Switzerland); Ballif, C. [Photovoltaics and Thin-Film Electronics Laboratory (PVLab), Institute of Microengineering (IMT), Ecole Polytechnique Fédérale de Lausanne - EPFL, Rue de la Maladière 71b, CH-2002 Neuchatel (Switzerland); Centre Suisse d’Electronique et de Microtechnique (CSEM) SA, Rue Jaquet-Droz 1, CH-2002 Neuchatel (Switzerland)

    2014-09-01

    Improving the conductivity of earth-abundant transparent conductive oxides (TCOs) remains an important challenge that will facilitate the replacement of indium-based TCOs. Here, we show that a hydrogen (H{sub 2})-plasma post-deposition treatment improves the conductivity of amorphous aluminum-doped zinc tin oxide while retaining its low optical absorption. We found that the H{sub 2}-plasma treatment performed at a substrate temperature of 50 °C reduces the resistivity of the films by 57% and increases the absorptance by only 2%. Additionally, the low substrate temperature delays the known formation of tin particles with the plasma and it allows the application of the process to temperature-sensitive substrates.

  2. Hydrogen uptake in alumina thin films synthesized from an aluminum plasma stream in an oxygen ambient

    International Nuclear Information System (INIS)

    Schneider, J.M.; Anders, A.; Hjoervarsson, B.; Petrov, I.; Macak, K.; Helmersson, U.; Sundgren, J.

    1999-01-01

    We describe the hydrogen uptake during the synthesis of alumina films from H 2 O present in the high vacuum gas background. The hydrogen concentration in the films was determined by the 1 H( 15 N,αγ) 12 C nuclear resonance reaction. Furthermore, we show the presence of hydrogen ions in the plasma stream by time-of-flight mass spectrometry. The hydrogen content increased in both the film and the plasma stream, as the oxygen partial pressure was increased. On the basis of these measurements and thermodynamic considerations, we suggest that an aluminum oxide hydroxide compound is formed, both on the cathode surface as well as in the film. The large scatter in the data reported in the literature for refractive index and chemical stability of alumina thin films can be explained on the basis of the suggested aluminum oxide hydroxide formation. copyright 1999 American Institute of Physics

  3. Nanostructured pyronin Y thin films as a new organic semiconductor: Linear/nonlinear optics, band gap and dielectric properties

    Energy Technology Data Exchange (ETDEWEB)

    Zahran, H.Y. [Metallurgical Lab.1, Nanoscience Laboratory for Environmental and Bio-medical Applications (NLEBA), Semiconductor Lab., Department of Physics, Faculty of Education, Ain Shams University, Roxy, 11757 Cairo (Egypt); Advanced Functional Materials & Optoelectronic Laboratory (AFMOL), Department of Physics, Faculty of Science, King Khalid University, P.O. Box 9004, Abha (Saudi Arabia); Yahia, I.S., E-mail: dr_isyahia@yahoo.com [Metallurgical Lab.1, Nanoscience Laboratory for Environmental and Bio-medical Applications (NLEBA), Semiconductor Lab., Department of Physics, Faculty of Education, Ain Shams University, Roxy, 11757 Cairo (Egypt); Advanced Functional Materials & Optoelectronic Laboratory (AFMOL), Department of Physics, Faculty of Science, King Khalid University, P.O. Box 9004, Abha (Saudi Arabia); Alamri, F.H. [Advanced Functional Materials & Optoelectronic Laboratory (AFMOL), Department of Physics, Faculty of Science, King Khalid University, P.O. Box 9004, Abha (Saudi Arabia)

    2017-05-15

    Pyronin Y dye (PY) is a kind of xanthene derivatives. Thin films of pyronin Y were deposited onto highly cleaned glass substrates using low-cost/spin coating technique. The structure properties of pyronin Y thin films with different thicknesses were investigated by using X-ray diffraction (XRD) and atomic force microscope (AFM). PY thin films for all the studied thicknesses have an amorphous structure supporting the short range order of the grain size. AFM supports the nanostructure with spherical/clusters morphologies of the investigated thin films. The optical constants of pyronin Y thin films for various thicknesses were studied by using UV–vis–NIR spectrophotometer in the wavelength range 350–2500 nm. The transmittance T(λ), reflectance R(λ) spectral and absorbance (abs(λ)) were obtained for all film thicknesses at room temperature and the normal light incident. These films showed a high transmittance in the wide scale wavelengths. For different thicknesses of the studied thin films, the optical band gaps were determined and their values around 2 eV. Real and imaginary dielectric constants, dissipation factor and the nonlinear optical parameters were calculated in the wavelengths to the range 300–2500 nm. The pyronin Y is a new organic semiconductor with a good optical absorption in UV–vis regions and it is suitable for nonlinear optical applications. - Highlights: • Pyronin Y (PY) nanostructured thin films were deposited by using spin coating technique. • XRD/AFM were used to study the structure of PY films. • The optical band gap was calculated on the basis of Tauc's model. • Linear/nonlinear optical parameters are calculated and interpreted via the applied optical theories. • PY thin films is a new organic semiconductor for its application in optoelectronic devices.

  4. The effects of varying plasma parameters on silicon thin film growth by ECR plasma CVD

    International Nuclear Information System (INIS)

    Summers, S.; Reehal, H.S.; Shirkoohi, G.H.

    2001-01-01

    The technique of electron cyclotron resonance (ECR) plasma enhanced chemical vapour deposition (PECVD) is increasingly being used in electronic and photonic device applications. ECR offers a number of advantages including improved control of the deposition process, less damage to the growing film and the possibility of high deposition rates. ECR occurs in a plasma under appropriate magnetic and electric field conditions. In most cases, as in our system, this is achieved with a combination of 2.45 GHz microwave radiation and a 0.0875 T magnetic field, due to the use of standardized microwave supplies. We have studied the effects on silicon film growth of changing the magnetic field configuration to produce one or more planes of ECR within the system, and of changing the positions of the plane(s) relative to the deposition substrate. The films were grown in silane-hydrogen discharges. The magnetic field in our system was provided by two electromagnets. It was measured experimentally for a number of operating current values and then a detailed profile achieved by modelling using a proprietary software package. A process condition discharge under identical magnetic field configurations to growth was analysed by the use of a Langmuir probe and the results correlated with film properties determined by Raman spectroscopy and Dektak profilometry. (author)

  5. High-energy ion treatments of amorphous As40Se60 thin films for optical applications

    Directory of Open Access Journals (Sweden)

    Rashmi Chauhan

    2014-06-01

    Full Text Available The treatment of 100 MeV Ag swift-heavy ion (SHI irradiation with five different fluences (3×1010, 1×1011, 3×1011, 1×1012, and 3×1012 ions/cm2 was used to design optical and structural properties of amorphous (a- As40Se60 chalcogenide thin films. Swanepoel method was applied on transmission measurements to determine the changes in optical bandgap, Tauc parameter and linear optical parameters, i.e., linear optical absorption, extinction coefficient and linear refractive index. Dispersion of the material was determined by Wemple–DiDomenico relation. Changes in nonlinear optical parameters of third-order optical susceptibility and nonlinear refractive index were determined using semi-empirical relations. Changes in surface morphology of the films were investigated using SEM observation, which indicated that fluence 3×1012 ions/cm2 was upper threshold limit for these films for ion treatment. It is observed that optical bandgap reduces from 1.76 eV to 1.64 eV, and nonlinear refractive index increases from 1.31×10−10 [esu] to 1.74×10−10 [esu]. Linear refractive index initially increases from 2.80 to 3.52 (for fluence 3×1010 ions/cm2 and then keeps decreasing. The observed changes in optical properties upon irradiation were explained in terms of structural rearrangements by Raman measurement. The study was compiled with the previous literature to propose SHI as an effective optical engineering technique to achieve desired changes according to the need of optical/photonic applications.

  6. Optical and structural properties of ZnO/ZnMgO composite thin films prepared by sol–gel technique

    International Nuclear Information System (INIS)

    Xu, Linhua; Su, Jing; Chen, Yulin; Zheng, Gaige; Pei, Shixin; Sun, Tingting; Wang, Junfeng; Lai, Min

    2013-01-01

    Highlights: ► ZnMgO thin film and ZnO/ZnMgO composite thin film have been prepared by sol–gel method. ► The intensity of ultraviolet emission of ZnMgO thin film is enhanced two times compared with that of pure ZnO thin film. ► Compared with ZnMgO thin film, ZnO/ZnMgO composite thin film shows better crystallization and optical properties. ► ZnO/ZnMgO composite thin films prepared by sol–gel method have potential applications in many optoelectronic devices. - Abstract: In this study, pure ZnO thin film, Mg-doped ZnO (ZnMgO) thin film, ZnO/ZnMgO and ZnMgO/ZnO composite thin films were prepared by sol–gel technique. The structural and optical properties of the samples were analyzed by X-ray diffraction, scanning electron microscopy, UV–visible spectrophotometer, ellipsometer and photoluminescence spectra, respectively. The results showed that the incorporation of Mg increased the strain, broadened the optical bandgap, and improved the intensity of ultraviolet emission of ZnO thin film. The full width at half maximum (FWHM) of the ultraviolet emission peak was also increased due to Mg-doping at the same time. Compared with pure ZnO and ZnMgO thin films, the ZnO/ZnMgO thin film showed better crystalline quality and ultraviolet emission performance, smaller strains and higher transmittance in the visible range.

  7. Annealing Temperature Dependent Structural and Optical Properties of RF Sputtered ZnO Thin Films.

    Science.gov (United States)

    Sharma, Shashikant; Varma, Tarun; Asokan, K; Periasamy, C; Boolchandani, Dharmendar

    2017-01-01

    This work investigates the effect of annealing temperature on structural and optical properties of ZnO thin films grown over Si 100 and glass substrates using RF sputtering technique. Annealing temperature has been varied from 300 °C to 600 °C in steps of 100, and different microstructural parameters such as grain size, dislocation density, lattice constant, stress and strain have been evaluated. The structural and surface morphological characterization has been done using X-ray Diffraction (XRD) and Scanning Electron Microscope (SEM). XRD analysis reveals that the peak intensity of 002 crystallographic orientation increases with increased annealing temperature. Optical characterization of deposited films have been done using UV-Vis-NIR spectroscopy and photoluminescence spectrometer. An increase in optical bandgap of deposited ZnO thin films with increasing annealing temperature has been observed. The average optical transmittance was found to be more than 85% for all deposited films. Photoluminiscense spectra (PL) suggest that the crystalline quality of deposited film has increased at higher annealing temperature.

  8. Passive optical limiting studies of nanostructured Cu doped ZnO-PVA composite thin films

    Science.gov (United States)

    Tamgadge, Y. S.; Sunatkari, A. L.; Talwatkar, S. S.; Pahurkar, V. G.; Muley, G. G.

    2016-01-01

    We prepared undoped and Cu doped ZnO semiconducting nanoparticles (NPs) by chemical co-precipitation method and obtained Cu doped ZnO-polyvinyl alcohol (PVA) nanocomposite thin films by spin coating to investigate third order nonlinear optical and optical limiting properties under cw laser excitation. Powder samples of NPs were characterized by X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), energy dispersive spectroscopy, transmission electron microscopy, ultraviolet-visible (UV-vis) and Fourier transform infrared spectroscopy. XRD pattern and FE-SEM micrograph revealed the presence of hexagonal wurtzite phase ZnO NPs having uniform morphology with average particle size of 20 nm. The presence of excitons and absorption peaks in the range 343-360 nm, revealed by UV-vis study, were attributed to excitons in n = 1 quantum state. Third order NLO properties of all composite thin films were investigated by He-Ne continuous wave (cw) laser of wavelength 632.8 nm using Z-scan technique. Thermally stimulated enhanced values of nonlinear refraction and absorption coefficients were obtained which may be attributed to self-defocusing effect, reverse saturable absorption, weak free carrier absorption and surface states properties originated from thermo optic effect. Optical limiting properties have been studied using cw diode laser of wavelength 808 nm and results are presented.

  9. Plasma interactions determine the composition in pulsed laser deposited thin films

    Science.gov (United States)

    Chen, Jikun; Döbeli, Max; Stender, Dieter; Conder, Kazimierz; Wokaun, Alexander; Schneider, Christof W.; Lippert, Thomas

    2014-09-01

    Plasma chemistry and scattering strongly affect the congruent, elemental transfer during pulsed laser deposition of target metal species in an oxygen atmosphere. Studying the plasma properties of La0.6Sr0.4MnO3, we demonstrate for as grown La0.6Sr0.4MnO3-δ films that a congruent transfer of metallic species is achieved in two pressure windows: ˜10-3 mbar and ˜2 × 10-1 mbar. In the intermediate pressure range, La0.6Sr0.4MnO3-δ becomes cation deficient and simultaneously almost fully stoichiometric in oxygen. Important for thin film growth is the presence of negative atomic oxygen and under which conditions positive metal-oxygen ions are created in the plasma. This insight into the plasma chemistry shows why the pressure window to obtain films with a desired composition and crystalline structure is narrow and requires a careful adjustment of the process parameters.

  10. Plasma interactions determine the composition in pulsed laser deposited thin films

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Jikun; Stender, Dieter; Conder, Kazimierz; Wokaun, Alexander; Schneider, Christof W.; Lippert, Thomas, E-mail: thomas.lippert@psi.ch [Paul Scherrer Institute, CH-5232 Villigen PSI (Switzerland); Döbeli, Max [Laboratory of Ion Beam Physics, ETH Zurich, CH-8093 Zurich (Switzerland)

    2014-09-15

    Plasma chemistry and scattering strongly affect the congruent, elemental transfer during pulsed laser deposition of target metal species in an oxygen atmosphere. Studying the plasma properties of La{sub 0.6}Sr{sub 0.4}MnO{sub 3}, we demonstrate for as grown La{sub 0.6}Sr{sub 0.4}MnO{sub 3-δ} films that a congruent transfer of metallic species is achieved in two pressure windows: ∼10{sup −3} mbar and ∼2 × 10{sup −1} mbar. In the intermediate pressure range, La{sub 0.6}Sr{sub 0.4}MnO{sub 3-δ} becomes cation deficient and simultaneously almost fully stoichiometric in oxygen. Important for thin film growth is the presence of negative atomic oxygen and under which conditions positive metal-oxygen ions are created in the plasma. This insight into the plasma chemistry shows why the pressure window to obtain films with a desired composition and crystalline structure is narrow and requires a careful adjustment of the process parameters.

  11. Relation between the plasma characteristics and physical properties of functional zinc oxide thin film prepared by radio frequency magnetron sputtering process

    International Nuclear Information System (INIS)

    Hsu, Che-Wei; Cheng, Tsung-Chieh; Huang, Wen-Hsien; Wu, Jong-Shinn; Cheng, Cheng-Chih; Cheng, Kai-Wen; Huang, Shih-Chiang

    2010-01-01

    The ZnO thin film was deposited on a glass substrate by a RF reactive magnetron sputtering method. Results showed that plasma density, electron temperature, deposition rate and estimated ion bombardment energy increase with increasing applied RF power. Three distinct power regimes were observed, which are strongly correlated with plasma properties. In the low-power regime, the largest grain size was observed due to slow deposition rate. In the medium-power regime, the smallest grain size was found, which is attributed to insufficient time for the adatoms to migrate on substrate surface. In the high-power regime, relatively larger grain size was found due to very large ion bombardment energy which enhances the thermal migration of adatoms. Regardless of pure ZnO thin film or ZnO on glass, high transmittance (> 80%) in the visible region can be generally observed. However, the film thickness plays a more important role for controlling optical properties, especially in the UV region, than the applied RF power. In general, with properly coated ZnO thin film, we can obtain a glass substrate which is highly transparent in the visible region, is of good anti-UV characteristics, and is highly hydrophobic, which is highly suitable for applications in the glass industry.

  12. Electrical and optical properties of Zn–In–Sn–O transparent conducting thin films

    International Nuclear Information System (INIS)

    Carreras, Paz; Antony, Aldrin; Rojas, Fredy; Bertomeu, Joan

    2011-01-01

    Indium tin oxide (ITO) is one of the widely used transparent conductive oxides (TCO) for application as transparent electrode in thin film silicon solar cells or thin film transistors owing to its low resistivity and high transparency. Nevertheless, indium is a scarce and expensive element and ITO films require high deposition temperature to achieve good electrical and optical properties. On the other hand, although not competing as ITO, doped Zinc Oxide (ZnO) is a promising and cheaper alternative. Therefore, our strategy has been to deposit ITO and ZnO multicomponent thin films at room temperature by radiofrequency (RF) magnetron co-sputtering in order to achieve TCOs with reduced indium content. Thin films of the quaternary system Zn–In–Sn–O (ZITO) with improved electrical and optical properties have been achieved. The samples were deposited by applying different RF powers to ZnO target while keeping a constant RF power to ITO target. This led to ZITO films with zinc content ratio varying between 0 and 67%. The optical, electrical and morphological properties have been thoroughly studied. The film composition was analysed by X-ray Photoelectron Spectroscopy. The films with 17% zinc content ratio showed the lowest resistivity (6.6 × 10 −4 Ω cm) and the highest transmittance (above 80% in the visible range). Though X-ray Diffraction studies showed amorphous nature for the films, using High Resolution Transmission Electron Microscopy we found that the microstructure of the films consisted of nanometric crystals embedded in a compact amorphous matrix. The effect of post deposition annealing on the films in both reducing and oxidizing atmospheres were studied. The changes were found to strongly depend on the zinc content ratio in the films.

  13. Visible photoluminescence from plasma-polymerized-organosilicone thin films deposited from HMDSO/O2 induced remote plasma: effect of oxygen fraction

    Science.gov (United States)

    Naddaf, M.; Saloum, S.

    2008-09-01

    Visible photoluminescence (PL) from thin films deposited on silicon wafers by remote plasma polymerization of the hexamethyledisiloxane (HMDSO)/O2 mixture in a radio-frequency hollow cathode discharge reactor has been investigated as a function of different oxygen fractions ( \\chi _{O_2 } =0 , 0.38, 0.61, 0.76 and 0.9). At room temperature, the film deposited at \\chi _{O_2 } =0 exhibits a strong, broad PL band peak centred at around 537.6 nm. A blue shift and a considerable decrease (~one order) in the intensity of the PL peak are observed after the addition of oxygen. Furthermore, in contrast to the film deposited from pure HMDSO, the low temperature (15 K) PL spectra of the film deposited from different HMDSO/O2 mixtures exhibit two separated 'green-blue' and 'yellow-green' PL peaks. The PL behaviour of the deposited films is correlated with their structural and morphological properties, investigated by using Fourier transform infrared, atomic force microscope and contact angle techniques. In addition, it is found from spectrophotometry measurements that the deposited films have relatively low absorption coefficients (in the range 100-500 cm-1) in the spectral range of their PL emission, attractive for possible integrated optics devices.

  14. Visible photoluminescence from plasma-polymerized-organosilicone thin films deposited from HMDSO/O2 induced remote plasma: effect of oxygen fraction

    International Nuclear Information System (INIS)

    Naddaf, M.; Saloum, S.

    2009-01-01

    Visible photoluminescence (PL) from thin films deposited on silicon wafers by remote plasma polymerization of the hexamethyldisiloxane (HMDSO)/O 2 mixture in a radio-frequency hollow cathode discharge reactor has been investigated as a function of different oxygen fractions (χ0 2 0.38, 0.61, 0.76 and 0.9). At room temperature, the film deposited at exhibits a strong, broad PL band peak centred at around 537.6 nm. A blue shift and a considerable decrease (∼one order) in the intensity of the PL peak are observed after the addition of oxygen. Furthermore, in contrast to the film deposited from pure HMDSO, the low temperature (15 K) PL spectra of the film deposited from different HMDSO/O 2 mixtures exhibit two separated green-blue and yellow-green PL peaks. The PL behaviour of the deposited films is correlated with their structural and morphological properties, investigated by using Fourier transform infrared, atomic force microscope and contact angle techniques. In addition, it is found from spectrophotometry measurements that the deposited films have relatively low absorption coefficients (in the range 100-500 cm -1 ) in the spectral range of their PL emission, attractive for possible integrated optics devices. (authors)

  15. Visible photoluminescence from plasma-polymerized-organosilicone thin films deposited from HMDSO/O{sub 2} induced remote plasma: effect of oxygen fraction

    Energy Technology Data Exchange (ETDEWEB)

    Naddaf, M; Saloum, S [Department of Physics, Atomic Energy Commission of Syria (AECS), PO Box 6091 Damascus (Syrian Arab Republic)], E-mail: scientific6@aec.org.sy

    2008-09-07

    Visible photoluminescence (PL) from thin films deposited on silicon wafers by remote plasma polymerization of the hexamethyledisiloxane (HMDSO)/O{sub 2} mixture in a radio-frequency hollow cathode discharge reactor has been investigated as a function of different oxygen fractions ({chi}{sub O{sub 2}}=0, 0.38, 0.61, 0.76 and 0.9). At room temperature, the film deposited at ({chi}{sub O{sub 2}}=0 exhibits a strong, broad PL band peak centred at around 537.6 nm. A blue shift and a considerable decrease ({approx}one order) in the intensity of the PL peak are observed after the addition of oxygen. Furthermore, in contrast to the film deposited from pure HMDSO, the low temperature (15 K) PL spectra of the film deposited from different HMDSO/O{sub 2} mixtures exhibit two separated 'green-blue' and 'yellow-green' PL peaks. The PL behaviour of the deposited films is correlated with their structural and morphological properties, investigated by using Fourier transform infrared, atomic force microscope and contact angle techniques. In addition, it is found from spectrophotometry measurements that the deposited films have relatively low absorption coefficients (in the range 100-500 cm{sup -1}) in the spectral range of their PL emission, attractive for possible integrated optics devices.

  16. Visible photoluminescence from plasma-polymerized-organosilicone thin films deposited from HMDSO/O2 induced remote plasma: effect of oxygen fraction

    International Nuclear Information System (INIS)

    Naddaf, M; Saloum, S

    2008-01-01

    Visible photoluminescence (PL) from thin films deposited on silicon wafers by remote plasma polymerization of the hexamethyledisiloxane (HMDSO)/O 2 mixture in a radio-frequency hollow cathode discharge reactor has been investigated as a function of different oxygen fractions (χ O 2 =0, 0.38, 0.61, 0.76 and 0.9). At room temperature, the film deposited at (χ O 2 =0 exhibits a strong, broad PL band peak centred at around 537.6 nm. A blue shift and a considerable decrease (∼one order) in the intensity of the PL peak are observed after the addition of oxygen. Furthermore, in contrast to the film deposited from pure HMDSO, the low temperature (15 K) PL spectra of the film deposited from different HMDSO/O 2 mixtures exhibit two separated 'green-blue' and 'yellow-green' PL peaks. The PL behaviour of the deposited films is correlated with their structural and morphological properties, investigated by using Fourier transform infrared, atomic force microscope and contact angle techniques. In addition, it is found from spectrophotometry measurements that the deposited films have relatively low absorption coefficients (in the range 100-500 cm -1 ) in the spectral range of their PL emission, attractive for possible integrated optics devices

  17. Optical, electrical and the related parameters of amorphous Ge-Bi-Se thin films

    International Nuclear Information System (INIS)

    El-Korashy, A.; El-Kabany, N.; El-Zahed, H.

    2005-01-01

    The related optical and electrical parameters of amorphous Ge-Bi-Se thin films were studied. The dependence of optical and electrical properties on the Bi content was observed in most compositions. At Bi >10at% the behavior show a switch from p to n type conduction mechanism. The correlation between the optical band gap E g and the average heats of atomization H s were observed. The results indicated that both the number of topological constant N con and the radial and angular N α , N β valence force constants exhibit the same trend with increasing Bi content. On the other hand, the mean bond energy increases with increasing Bi content to x=15at%. It may be concluded that is a function of the mean coordination number N co , the type of bonds, the degree of cross-linking and the band energy forming the network

  18. Coupled Optical Tamm States in a Planar Dielectric Mirror Structure Containing a Thin Metal Film

    International Nuclear Information System (INIS)

    Zhou Hai-Chun; Yang Guang; Lu Pei-Xiang; Wang Kai; Long Hua

    2012-01-01

    The coupling between two optical Tamm states (OTSs) with the same eigenenergy is numerically investigated in a planar dielectric mirror structure containing a thin metal film. The reflectivity map in this structure at normal incidence is obtained by applying the transfer matrix method. Two splitting branches appear in the photonic bandgap region when both adjacent dielectric layers of metal film are properly set. The splitting energy of two branches strongly depends on the thickness of the metal film. According to the electric field distribution in this structure, it is found that the high-energy branch corresponds to the antisymmetric coupling between two OTSs, while the low-energy branch is associated with the symmetric coupling between two OTSs. Moreover, the optical difference frequency of two branches is located in a broad terahertz region. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  19. Post Deposition Annealing Effects on Optical, Electrical and Morphological Studies of ZnTTBPc Thin Films

    Directory of Open Access Journals (Sweden)

    B. R. Rejitha

    2012-01-01

    Full Text Available Phthalocyanines (Pcs act as efficient absorbants of photons in the visible region, specifically between 600 and 700 nm. It will produce an excited triplet state. In this paper we report the annealing effects of optical, electrical and surface morphological properties of thermal evaporated Zinc-tetra-tert-butyl-29H, 31H phthalocyanine (ZnTTBPc thin films. The optical transmittance measurements were done in the visible region (400-800 nm and, films were found to be absorbing in nature. From spectral data the absorption coefficient α, dielectric constant ε and the extinction coefficient k were evaluated and, results discussed. Also the optical band gap of the material was estimated. The activation energies were measured. Scanning electron microscopic studies was carried out to determine surface uniformity of films.

  20. Ultra-Thin Optically Transparent Carbon Electrodes Produced from Layers of Adsorbed Proteins

    Science.gov (United States)

    Alharthi, Sarah A.; Benavidez, Tomas E.; Garcia, Carlos D.

    2013-01-01

    This work describes a simple, versatile, and inexpensive procedure to prepare optically transparent carbon electrodes, using proteins as precursors. Upon adsorption, the protein-coated substrates were pyrolyzed under reductive conditions (5% H2) to form ultra-thin, conductive electrodes. Because proteins spontaneously adsorb to interfaces forming uniform layers, the proposed method does not require a precise control of the preparation conditions, specialized instrumentation, or expensive precursors. The resulting electrodes were characterized by a combination of electrochemical, optical, and spectroscopic means. As a proof-of-concept, the optically-transparent electrodes were also used as substrate for the development of an electrochemical glucose biosensor. The proposed films represent a convenient alternative to more sophisticated, and less available, carbon-based nanomaterials. Furthermore, these films could be formed on a variety of substrates, without classical limitations of size or shape. PMID:23421732

  1. Structural, Optical, and Morphological Properties of the Cadmium Oxide Thin Film Taif S. Almaadhede

    Directory of Open Access Journals (Sweden)

    Taif S. Almaadhede

    2018-04-01

    Full Text Available Cadmium oxide nanoparticles CdO NPS has been prepared by laser ablation in ethanol at 600 pulses and 600 mJ as laser energy. The structural, optical, and morphological properties of the cadmium oxide CdO thin film deposited on a glass substrate have been studied. X-ray diffrac-tometer (XRD 6000, Shimadzu, X-ray, diffractometer with Cukα radiation at a wavelength of ( = 0.154056 nm was utilized to investigate the structural properties of CdO NPs. The optical absorption of colloidal CdO NPs was measured using a spectrophotometer (Cary, 100 cans plus, UV-Vis-NIR, Split Beam Optics, Dual detectors in the range of (200–900 nm. The morpholo-gy of the CdO NPs was investigated by using AFM (AA 3000 Scanning Probe Microscope. The thickness of the films was measured using ellipsometer (Angstrom sun Technologies Ins.

  2. Optical Properties of Al- and Sb-Doped CdTe Thin Films

    Directory of Open Access Journals (Sweden)

    A. A. J. Al-Douri

    2010-01-01

    Full Text Available Nondoped and (Al, Sb-doped CdTe thin films with 0.5, 1.5, and 2.5  wt.%, respectively, were deposited by thermal evaporation technique under vacuum onto Corning 7059 glass at substrate temperatures ( of room temperature (RT and 423 K. The optical properties of deposited CdTe films such as band gap, refractive index (n, extinction coefficient (, and dielectric coefficients were investigated as function of Al and Sb wt.% doping, respectively. The results showed that films have direct optical transition. Increasing and the wt.% of both types of dopant, the band gap decrease but the optical is constant as n, and real and imaginary parts of the dielectric coefficient increase.

  3. Optically transparent, mechanically durable, nanostructured superhydrophobic surfaces enabled by spinodally phase-separated glass thin films.

    Science.gov (United States)

    Aytug, Tolga; Simpson, John T; Lupini, Andrew R; Trejo, Rosa M; Jellison, Gerald E; Ivanov, Ilia N; Pennycook, Stephen J; Hillesheim, Daniel A; Winter, Kyle O; Christen, David K; Hunter, Scott R; Haynes, J Allen

    2013-08-09

    We describe the formation and properties of atomically bonded, optical quality, nanostructured thin glass film coatings on glass plates, utilizing phase separation by spinodal decomposition in a sodium borosilicate glass system. Following deposition via magnetron sputtering, thermal processing and differential etching, these coatings are structurally superhydrophilic (i.e., display anti-fogging functionality) and demonstrate robust mechanical properties and superior abrasion resistance. After appropriate chemical surface modification, the surfaces display a stable, non-wetting Cassie-Baxter state and exhibit exceptional superhydrophobic performance, with water droplet contact angles as large as 172°. As an added benefit, in both superhydrophobic and superhydrophilic states these nanostructured surfaces can block ultraviolet radiation and can be engineered to be anti-reflective with broadband and omnidirectional transparency. Thus, the present approach could be tailored toward distinct coatings for numerous markets, such as residential windows, windshields, specialty optics, goggles, electronic and photovoltaic cover glasses, and optical components used throughout the US military.

  4. Optically transparent, mechanically durable, nanostructured superhydrophobic surfaces enabled by spinodally phase-separated glass thin films

    Science.gov (United States)

    Aytug, Tolga; Simpson, John T.; Lupini, Andrew R.; Trejo, Rosa M.; Jellison, Gerald E.; Ivanov, Ilia N.; Pennycook, Stephen J.; Hillesheim, Daniel A.; Winter, Kyle O.; Christen, David K.; Hunter, Scott R.; Haynes, J. Allen

    2013-08-01

    We describe the formation and properties of atomically bonded, optical quality, nanostructured thin glass film coatings on glass plates, utilizing phase separation by spinodal decomposition in a sodium borosilicate glass system. Following deposition via magnetron sputtering, thermal processing and differential etching, these coatings are structurally superhydrophilic (i.e., display anti-fogging functionality) and demonstrate robust mechanical properties and superior abrasion resistance. After appropriate chemical surface modification, the surfaces display a stable, non-wetting Cassie-Baxter state and exhibit exceptional superhydrophobic performance, with water droplet contact angles as large as 172°. As an added benefit, in both superhydrophobic and superhydrophilic states these nanostructured surfaces can block ultraviolet radiation and can be engineered to be anti-reflective with broadband and omnidirectional transparency. Thus, the present approach could be tailored toward distinct coatings for numerous markets, such as residential windows, windshields, specialty optics, goggles, electronic and photovoltaic cover glasses, and optical components used throughout the US military.

  5. Optically transparent, mechanically durable, nanostructured superhydrophobic surfaces enabled by spinodally phase-separated glass thin films

    International Nuclear Information System (INIS)

    Aytug, Tolga; Simpson, John T; Lupini, Andrew R; Trejo, Rosa M; Jellison, Gerald E; Ivanov, Ilia N; Pennycook, Stephen J; Hillesheim, Daniel A; Winter, Kyle O; Christen, David K; Hunter, Scott R; Allen Haynes, J

    2013-01-01

    We describe the formation and properties of atomically bonded, optical quality, nanostructured thin glass film coatings on glass plates, utilizing phase separation by spinodal decomposition in a sodium borosilicate glass system. Following deposition via magnetron sputtering, thermal processing and differential etching, these coatings are structurally superhydrophilic (i.e., display anti-fogging functionality) and demonstrate robust mechanical properties and superior abrasion resistance. After appropriate chemical surface modification, the surfaces display a stable, non-wetting Cassie–Baxter state and exhibit exceptional superhydrophobic performance, with water droplet contact angles as large as 172°. As an added benefit, in both superhydrophobic and superhydrophilic states these nanostructured surfaces can block ultraviolet radiation and can be engineered to be anti-reflective with broadband and omnidirectional transparency. Thus, the present approach could be tailored toward distinct coatings for numerous markets, such as residential windows, windshields, specialty optics, goggles, electronic and photovoltaic cover glasses, and optical components used throughout the US military. (paper)

  6. Calculation for laser-produced plasmas conditions of thin middle-Z targets: Pt.I

    International Nuclear Information System (INIS)

    Peng Huimin; Zhang Guoping; Sheng Jiatian; Shao Yunfeng; Zhang Yinchun

    1988-01-01

    An one-dimentional non-LTE laser irradiated code was used to simulate the laser-produced plasmas conditions of thin middle Z targets with high intensities (about 10 13 W/cm 2 ) irradiation. Following physical processes are considered: bremsstrahlung, radiative ionization, collisional ionization by electrons and their inverse processes, Compton scattering. Fokker-Planck approximtaion is used in Compton scattering; the thermal flux limits are taken for electrons and ions in the calculating, and the multigroup flux-limited diffusion approximation is taken for the radiative transport equations. The average-atom model is used to calculate the population probabilities of atoms. Laser absorption via inverse bremsstrahlung is considered to be the most important in the simulation. Using laser beams with intensities 5 x 10 13 W/cm 2 and 1 x 10 14 W/cm 2 , λ L = 0.53 μm, τ = 450 ps to irradiate thin Se target from single-side and double-sides separately, the computational results for laser-produced plasmas conditions are well agree with experimental results

  7. Characterization of bioactive RGD peptide immobilized onto poly(acrylic acid) thin films by plasma polymerization

    Energy Technology Data Exchange (ETDEWEB)

    Seo, Hyun Suk; Ko, Yeong Mu; Shim, Jae Won [Department of Dental Materials, School of Dentistry, MRC Center, Chosun University, Gwangju (Korea, Republic of); Lim, Yun Kyong; Kook, Joong-Ki [Department of Oral Biochemistry, School of Dentistry, Chosun University, Gwangju (Korea, Republic of); Cho, Dong-Lyun [School of Applied Chemical Engineering and Center for Functional Nano Fine Chemicals, Chonnam National University, Gwangju (Korea, Republic of); Kim, Byung Hoon, E-mail: kim5055@chosun.ac.kr [Department of Dental Materials, School of Dentistry, MRC Center, Chosun University, Gwangju (Korea, Republic of)

    2010-11-01

    Plasma surface modification can be used to improve the surface properties of commercial pure Ti by creating functional groups to produce bioactive materials with different surface topography. In this study, a titanium surface was modified with acrylic acid (AA) using a plasma treatment and immobilized with bioactive arginine-glycine-aspartic acid (RGD) peptide, which may accelerate the tissue integration of bone implants. Both terminals containing the -NH{sub 2} of RGD peptide sequence and -COOH of poly(acrylic acid) (PAA) thin film were combined with a covalent bond in the presence of 1-ethyl-3-3-dimethylaminopropyl carbodiimide (EDC). The chemical structure and morphology of AA film and RGD immobilized surface were investigated by X-ray photoelectron spectroscopy (XPS), Fourier transform infrared (FT-IR), atomic force microscopy (AFM), and scanning electron microscopy (SEM). All chemical analysis showed full coverage of the Ti substrate with the PAA thin film containing COOH groups and the RGD peptide. The MC3T3-E1 cells were cultured on each specimen, and the cell alkaline phosphatase (ALP) activity were examined. The surface-immobilized RGD peptide has a significantly increased the ALP activity of MC3T3-E1 cells. These results suggest that the RGD peptide immobilization on the titanium surface has an effect on osteoblastic differentiation of MC3T3-E1 cells and potential use in osteo-conductive bone implants.

  8. Thin TiO2 films deposited by implantation and sputtering in RF inductively coupled plasmas

    International Nuclear Information System (INIS)

    Valencia-Alvarado, R; López-Callejas, R; Barocio, S R; Mercado-Cabrera, A; Peña-Eguiluz, R; Muñoz-Castro, A E; Rodríguez-Méndez, B G; De la Piedad-Beneitez, A; De la Rosa-Vázquez, J M

    2012-01-01

    The achievement of titanium dioxide (TiO 2 ) thin films in the rutile crystalline phase is reported. The samples result from the implantation of oxygen ions of Ti in argon/oxygen plasma generated by inductively coupled RF at a commercial 13.56 MHz frequency. Simultaneously, a sputtering process is conducted on the titanium target in order to produce TiO 2 thin films in the anatase phase over silicon and glass substrates. Both implantation and sputtering processes shared the same 500 W plasma with the target, polarized between 0 and -3 kV. The substrates were placed between 2 and 3 cm from the target, this distance being found to be determinant of the TiO 2 deposition rate. The rutile phase in the target was obtained at temperatures in the order of 680 degrees C and the anatase (unbiased) one at about 300 degrees C without any auxiliary heating. The crystalline phases were characterized by x ray diffraction and Raman spectroscopy. The morphology and average roughness were established by means of scanning electronic and atomic force microscopy, whereas the reaction products generated during the oxidation process were analyzed by mass spectrometry. Finally, the stoichiometric composition was measured by means of X-ray photoelectron spectroscopy.

  9. Synthesis and Characterization of Nanofibrous Polyaniline Thin Film Prepared by Novel Atmospheric Pressure Plasma Polymerization Technique.

    Science.gov (United States)

    Park, Choon-Sang; Kim, Dong Ha; Shin, Bhum Jae; Tae, Heung-Sik

    2016-01-11

    This work presents a study on the preparation of plasma-polymerized aniline (pPANI) nanofibers and nanoparticles by an intense plasma cloud type atmospheric pressure plasma jets (iPC-APPJ) device with a single bundle of three glass tubes. The nano size polymer was obtained at a sinusoidal wave with a peak value of 8 kV and a frequency of 26 kHz under ambient air. Discharge currents, photo-sensor amplifier, and optical emission spectrometer (OES) techniques were used to analyze the plasma produced from the iPC-APPJ device. Field emission scanning electron microscopy (FE-SEM), transmission electron microscopy (TEM), Fourier transform infrared spectroscopy (FT-IR), gas chromatography-mass spectrometry (GC-MS), and gel permeation chromatography (GPC) techniques were used to analyze the pPANI. FE-SEM and TEM results show that pPANI has nanofibers, nanoparticles morphology, and polycrystalline characteristics. The FT-IR and GC-MS analysis show the characteristic polyaniline peaks with evidence that some quinone and benzene rings are broken by the discharge energy. GPC results show that pPANI has high molecular weight ( M w ), about 533 kDa with 1.9 polydispersity index (PDI). This study contributes to a better understanding on the novel growth process and synthesis of uniform polyaniline nanofibers and nanoparticles with high molecular weights using the simple atmospheric pressure plasma polymerization technique.

  10. Synthesis and Characterization of Nanofibrous Polyaniline Thin Film Prepared by Novel Atmospheric Pressure Plasma Polymerization Technique

    Directory of Open Access Journals (Sweden)

    Choon-Sang Park

    2016-01-01

    Full Text Available This work presents a study on the preparation of plasma-polymerized aniline (pPANI nanofibers and nanoparticles by an intense plasma cloud type atmospheric pressure plasma jets (iPC-APPJ device with a single bundle of three glass tubes. The nano size polymer was obtained at a sinusoidal wave with a peak value of 8 kV and a frequency of 26 kHz under ambient air. Discharge currents, photo-sensor amplifier, and optical emission spectrometer (OES techniques were used to analyze the plasma produced from the iPC-APPJ device. Field emission scanning electron microscopy (FE-SEM, transmission electron microscopy (TEM, Fourier transform infrared spectroscopy (FT-IR, gas chromatography-mass spectrometry (GC-MS, and gel permeation chromatography (GPC techniques were used to analyze the pPANI. FE-SEM and TEM results show that pPANI has nanofibers, nanoparticles morphology, and polycrystalline characteristics. The FT-IR and GC-MS analysis show the characteristic polyaniline peaks with evidence that some quinone and benzene rings are broken by the discharge energy. GPC results show that pPANI has high molecular weight (Mw, about 533 kDa with 1.9 polydispersity index (PDI. This study contributes to a better understanding on the novel growth process and synthesis of uniform polyaniline nanofibers and nanoparticles with high molecular weights using the simple atmospheric pressure plasma polymerization technique.

  11. Application of femtosecond laser ablation inductively coupled plasma mass spectrometry for quantitative analysis of thin Cu(In,Ga)Se{sub 2} solar cell films

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Seokhee [School of Mechatronics, Gwangju Institute of Science and Technology, 1 Oryong-dong, Buk-gu, Gwangju 500-712 (Korea, Republic of); Gonzalez, Jhanis J. [Lawrence Berkeley National Laboratory, 1 Cyclotron Road, Berkeley, CA 94720 (United States); Applied Spectra Inc., 46665 Fremont Boulevard, Fremont, CA 94538 (United States); Yoo, Jong H. [Applied Spectra Inc., 46665 Fremont Boulevard, Fremont, CA 94538 (United States); Chirinos, Jose R. [Lawrence Berkeley National Laboratory, 1 Cyclotron Road, Berkeley, CA 94720 (United States); Facultad de Ciencias, Universidad Central de Venezuela, Caracas 1041A (Venezuela, Bolivarian Republic of); Russo, Richard E. [Lawrence Berkeley National Laboratory, 1 Cyclotron Road, Berkeley, CA 94720 (United States); Applied Spectra Inc., 46665 Fremont Boulevard, Fremont, CA 94538 (United States); Jeong, Sungho, E-mail: shjeong@gist.ac.kr [School of Mechatronics, Gwangju Institute of Science and Technology, 1 Oryong-dong, Buk-gu, Gwangju 500-712 (Korea, Republic of)

    2015-02-27

    This work reports that the composition of Cu(In,Ga)Se{sub 2} (CIGS) thin solar cell films can be quantitatively predicted with high accuracy and precision by femtosecond laser ablation-inductively coupled plasma-mass spectrometry (fs-LA-ICP-MS). It is demonstrated that the results are strongly influenced by sampling conditions during fs-laser beam (λ = 1030 nm, τ = 450 fs) scanning on the CIGS surface. The fs-LA-ICP-MS signals measured at optimal sampling conditions generally provide a straight line calibration with respect to the reference concentrations measured by inductively coupled plasma optical emission spectroscopy (ICP-OES). The concentration ratios predicted by fs-LA-ICP-MS showed high accuracy, to 95–97% of the values measured with ICP-OES, for Cu, In, Ga, and Se elements. - Highlights: • Laser ablation inductively coupled plasma mass spectrometry of thin film is reported. • Concentration ratio prediction with a confidence level of 95–97% is achieved. • Quantitative determination of composition is demonstrated.

  12. Nonlinear optical properties of poly(methyl methacrylate) thin films doped with Bixa Orellana dye

    Energy Technology Data Exchange (ETDEWEB)

    Zongo, S., E-mail: sidiki@tlabs.ac.za [UNESCO-UNISA Africa Chair in Nanosciences/Nanotechnology, College of Graduate Studies, University of South Africa, Muckleneuk ridge, POBox 392, Pretoria (South Africa); Nanosciences African Network (NANOAFNET), iThemba LABS-National Research Foundation, 1 OldFaure road, Somerset West 7129, POBox 722, Somerset West, Western Cape Province (South Africa); Kerasidou, A.P. [LUNAM Université, Université d’Angers, CNRS UMR 6200, Laboratoire MOLTECH-Anjou, 2 Bd Lavoisier, 49045 Angers Cedex (France); Sone, B.T.; Diallo, A. [UNESCO-UNISA Africa Chair in Nanosciences/Nanotechnology, College of Graduate Studies, University of South Africa, Muckleneuk ridge, POBox 392, Pretoria (South Africa); Nanosciences African Network (NANOAFNET), iThemba LABS-National Research Foundation, 1 OldFaure road, Somerset West 7129, POBox 722, Somerset West, Western Cape Province (South Africa); Mthunzi, P. [Council for Scientific and Industrial Research, P O Box 395, Pretoria 0001 (South Africa); Iliopoulos, K. [LUNAM Université, Université d’Angers, CNRS UMR 6200, Laboratoire MOLTECH-Anjou, 2 Bd Lavoisier, 49045 Angers Cedex (France); Institute of Chemical Engineering Sciences, Foundation for Research and Technology Hellas (FORTH/ICE-HT), 26504 Patras (Greece); Nkosi, M. [Nanosciences African Network (NANOAFNET), iThemba LABS-National Research Foundation, 1 OldFaure road, Somerset West 7129, POBox 722, Somerset West, Western Cape Province (South Africa); and others

    2015-06-15

    Highlights: • We studied the linear and nonlinear optical properties of hybrid Bixa Orellana dye doped PMMA thin film. • We investigated the linear optical properties by means of UV/Vis, FTIR and Fluorescence. • We used Tauc - Lorentz model to evaluate linear optical parameters (n &k) with relative maximum of 1.456 at 508.5, 523.79 and 511.9 nm for n is observed while the maximum of k varies from 0.070 to 0.080. • We evaluated nonlinear third order susceptibility which was found to be 1.00 × 10{sup −21} m{sup 2} V{sup −2} or 0.72 × 10{sup −13} esu. - Abstract: Natural dyes with highly delocalized π-electron systems are considered as promising organic materials for nonlinear optical applications. Among these dyes, Bixa Orellana dye with extended π-electron delocalization is one of the most attractive dyes. Bixa Orellana dye-doped Poly(methyl methacrylate) (PMMA) thin films were prepared through spin coating process for linear and nonlinear optical properties investigation. Atomic force microscopy (AFM) was used to evaluate the roughness of the thin films. The optical constants n and k were evaluated by ellipsometric spectroscopy. The refractive index had a maximum of about 1.456 at 508.5, 523.79 and 511.9 nm, while the maximum of k varies from 0.070 to 0.080 with the thickness. The third order nonlinear optical properties of the hybrid Bixa Orellana dye-PMMA polymer were investigated under 30 ps laser irradiation at 1064 nm with a repetition rate of 10 Hz. In particular the third-order nonlinear susceptibility has been determined by means of the Maker Fringes technique. The nonlinear third order susceptibility was found to be 1.00 × 10{sup −21} m{sup 2} V{sup −2} or 0.72 × 10{sup −13} esu. Our studies provide concrete evidence that the hybrid-PMMA composites of Bixa dye are prospective candidates for nonlinear material applications.

  13. Electrical resistivity change in Al:ZnO thin films dynamically deposited by bipolar pulsed direct-current sputtering and a remote plasma source

    International Nuclear Information System (INIS)

    Yang, Wonkyun; Joo, Junghoon

    2010-01-01

    The Al-doped ZnO (AZO) thin films for a transparent conducting oxide in solar cell devices were deposited by bipolar pulsed dc magnetron sputtering. This work was performed in an in-line type system and investigated AZO films in a static deposition mode and dynamic one, which is more important in the practical fields. Because of this dynamic deposition process, the zigzagged columnar structure was observed. This resulted in the decreasing electrical property, optical properties, and surface roughness. As a deposition in the dynamic mode, the resistivity increased from 1.64x10 -3 to 2.50x10 -3 Ω cm, as compared to that in the static mode, and the transmittance also decreased from 83.9% to 78.3%. To recover the disadvantage, a remote plasma source (RPS) was supported between the substrate and target for reducing zigzagged formation during the deposition. The deposition rate decreased by using RPS, but the electrical and optical properties of films got better than only dynamic mode. The resistivity and transmittance in the dynamic mode using RPS were 2.1x10 -3 Ω cm and 85.5%, respectively. In this study, the authors found the possibility to advance the electrical and optical properties of AZO thin films in the industry mode.

  14. Estimation of optical constants of a bio-thin layer (onion epidermis), using SPR spectroscopy

    International Nuclear Information System (INIS)

    Rehman, Saif-ur-; Hayashi, Shinji; Sekkat, Zouheir; Mumtaz, Huma; Shaukat, S F

    2014-01-01

    We estimate the optical constants of a biological thin layer (Allium cepa) by surface plasmon resonance (SPR) spectroscopy. For this study, the fresh inner thin epidermis of an onion bulb was used and stacked directly on gold (Au) and silver (Ag) film surfaces in order to identify the shift in SPR mode of each metal film at an operating wavelength of 632.8 nm. The thickness and dielectric constants of the biological thin layer were determined by matching the experimental SPR curves to theoretical ones. The thickness and roughness of bare Au and Ag thin films were also measured by atomic force microscopy (AFM); the results of which are in good agreement with those obtained through experiment. Due to the high surface roughness of the natural onion epidermis layer, AFM could not measure the exact thickness of an onion epidermis. It is estimated that the value of the real part of the dielectric constant of an onion epidermis is between the dielectric constants of water and air. (paper)

  15. Enhanced electrical and optical properties of CdS:Na thin films by photochemical deposition

    Science.gov (United States)

    Kumar, V. Nirmal; Suriakarthick, R.; Gopalakrishnan, R.; Hayakawa, Y.

    2017-06-01

    CdS:Na thin film was deposited on a glass substrate by photochemical deposition from aqueous solution contained CdSO4.5H2O and Na2S2O3 as cation and anion sources, respectively. The anion source Na2S2O3 served as Na dopant source. The deposited film exhibited cubic phase of CdS and incorporation of Na was revealed from X-ray diffraction study. The incorporation of Na in CdS changed the surface morphology from spherical to nano rods. CdS:Na thin film showed blue shift in its absorption spectrum which was more desirable for transmitting higher energy photons (visible region) in thin film solar cells. The Raman analysis confirmed 1 LO and 2 LO process at 297 and 593 cm-1, respectively. The carrier concentration of CdS increased with the inclusion of Na and its resistivity value decreased. Both the electrical and optical properties of CdS were enhanced in CdS:Na thin films which was desirable as a window layer material for photovoltaic application.

  16. Optical and infrared spectroscopic studies of chemical sensing by copper phthalocyanine thin films

    International Nuclear Information System (INIS)

    Singh, Sukhwinder; Tripathi, S.K.; Saini, G.S.S.

    2008-01-01

    Thin films of copper phthalocyanine have been deposited on KBr and glass substrates by thermal evaporation method and characterized by the X-ray diffraction and optical absorption techniques. The observed X-ray pattern suggests the presence of α crystalline phase of copper phthalocyanine in the as-deposited thin films. Infrared spectra of thin films on the KBr pallet before and after exposure to the vapours of ammonia and methanol have been recorded in the wavenumber region of 400-1650 cm -1 . The observed infrared bands also confirm the α crystalline phase. On exposure, change in the intensity of some bands is observed. A new band at 1385 cm -1 , forbidden under ideal D 4h point group symmetry, is also observed in the spectra of exposed thin films. These changes in the spectra are interpreted in terms of the lowering of molecular symmetry from D 4h to C 4v . Axial ligation of the vapour molecules on fifth coordination site of the metal ion is responsible for lowering of the molecular symmetry

  17. Optical properties of organic semiconductor thin films. Static spectra and real-time growth studies

    Energy Technology Data Exchange (ETDEWEB)

    Heinemeyer, Ute

    2009-07-20

    The aim of this work was to establish the anisotropic dielectric function of organic thin films on silicon covered with native oxide and to study their optical properties during film growth. While the work focuses mainly on the optical properties of Diindenoperylene (DIP) films, also the optical response of Pentacene (PEN) films during growth is studied for comparison. Spectroscopic ellipsometry and differential reflectance spectroscopy are used to determine the dielectric function of the films ex-situ and in-situ, i.e. in air and in ultrahigh vacuum. Additionally, Raman- and fluorescence spectroscopy is utilized to characterize the DIP films serving also as a basis for spatially resolved optical measurements beyond the diffraction limit. Furthermore, X-ray reflectometry and atomic force microscopy are used to determine important structural and morphological film properties. The absorption spectrum of DIP in solution serves as a monomer reference. The observed vibronic progression of the HOMO-LUMO transition allows the determination of the Huang-Rhys parameter experimentally, which is a measure of the electronic vibrational coupling. The corresponding breathing modes are measured by Raman spectroscopy. The optical properties of DIP films on native oxide show significant differences compared to the monomer spectrum due to intermolecular interactions. First of all, the thin film spectra are highly anisotropic due to the structural order of the films. Furthermore the Frenkel exciton transfer is studied and the energy difference between Frenkel and charge transfer excitons is determined. Real-time measurements reveal optical differences between interfacial or surface molecules and bulk molecules that play an important role for device applications. They are not only performed for DIP films but also for PEN films. While for DIP films on glass the appearance of a new mode is visible, the spectra of PEN show a pronounced energy red-shift during growth. It is shown how the

  18. Evaluating interfacial adhesion properties of Pt/Ti thin-film by using acousto-optic technique

    Energy Technology Data Exchange (ETDEWEB)

    Park, Hae Sung [Graduate School of Automotive Engineering, Seoul National University of Science and Technology, Seoul (Korea, Republic of); Didie, David; Yoshida, Sanichiro [Dept. of Chemistry and Physics, Southeastern Louisiana University, Hammond (United States); Park, Ik Keun [Dept. of Mechanical and Automotive Engineering, Seoul National University of Science and Technology, Seoul (Korea, Republic of)

    2016-06-15

    We propose an acousto-optic technique for the nondestructive evaluation of adhesion properties of a Pt/Ti thin-film interface. Since there are some problems encountered when using prevailing techniques to nondestructively evaluate the interfacial properties of micro/nano-scale thin-films, we applied an interferometer that combined the acoustic and optical methods. This technique is based on the Michelson interferometer but the resultant surface of the thin film specimen makes interference instead of the mirror when the interface is excited from the acoustic transducer at the driving frequency. The thin film shows resonance-like behavior at a certain frequency range, resulting in a low-contrast fringe pattern. Therefore, we represented quantitatively the change in fringe pattern as a frequency spectrum and discovered the possibility that the interfacial adhesion properties of a thin film can be evaluated using the newly proposed technique.

  19. Comparative Study of Furnace and Flash Lamp Annealed Silicon Thin Films Grown by Plasma Enhanced Chemical Vapor Deposition

    Directory of Open Access Journals (Sweden)

    Maheshwar Shrestha

    2018-03-01

    Full Text Available Low-temperature growth of microcrystalline silicon (mc-Si is attractive for many optoelectronic device applications. This paper reports a detailed comparison of optical properties, microstructure, and morphology of amorphous silicon (a-Si thin films crystallized by furnace annealing and flash lamp annealing (FLA at temperatures below the softening point of glass substrate. The initial a-Si films were grown by plasma enhanced chemical vapor deposition (PECVD. Reflectance measurement indicated characteristic peak in the UV region ~280 nm for the furnace annealed (>550 °C and flash lamp annealed films, which provided evidence of crystallization. The film surface roughness increased with increasing the annealing temperature as well as after the flash lamp annealing. X-ray diffraction (XRD measurement indicated that the as-deposited samples were purely amorphous and after furnace crystallization, the crystallites tended to align in one single direction (202 with uniform size that increased with the annealing temperature. On the other hand, the flash lamp crystalized films had randomly oriented crystallites with different sizes. Raman spectroscopy showed the crystalline volume fraction of 23.5%, 47.3%, and 61.3% for the samples annealed at 550 °C, 650 °C, and with flash lamp, respectively. The flash lamp annealed film was better crystallized with rougher surface compared to furnace annealed ones.

  20. Electrical and optical properties of Cu–Cr–O thin films fabricated by chemical vapour deposition

    Energy Technology Data Exchange (ETDEWEB)

    Lunca Popa, P., E-mail: petru.luncapopa@list.lu; Crêpellière, J.; Leturcq, R.; Lenoble, D.

    2016-08-01

    We present electrical and optical properties of CuCrO{sub 2} thin films deposited by chemical vapour deposition, as well as the influence of depositions' parameters on these properties. Oxygen partial pressure and precursor's concentrations have the greatest influence on optical and electrical properties of the films. Values of conductivities ranging from 10{sup −4} to 10 S/cm were obtained using different deposition conditions. The conductivity is thermally activated with an activation energy ranging from 57 to 283 meV. Thermoelectric measurements confirm the p-type conduction, and demonstrate high carrier concentration typical for a degenerate semiconductor. The as-deposited films show a medium degree of crystallinity, a maximum optical transmission up to 80% in the visible range with a corresponding band gap around 3.2 eV. - Highlights: • CuCrO{sub 2} thin films deposited via a new innovative method - DLICVD. • Band gap and electrical conductivity can be tuned by controlling deposition parameters • Key process parameter is the metallic/oxygen atomic ratio involved in the process • Electrical conductivities values spanning 5 orders of magnitudes were obtained using different deposition parameters.