WorldWideScience

Sample records for optical thin film

  1. Nonlinear optical thin films

    Science.gov (United States)

    Leslie, Thomas M.

    1993-01-01

    A focused approach to development and evaluation of organic polymer films for use in optoelectronics is presented. The issues and challenges that are addressed include: (1) material synthesis, purification, and the tailoring of the material properties; (2) deposition of uniform thin films by a variety of methods; (3) characterization of material physical properties (thermal, electrical, optical, and electro-optical); and (4) device fabrication and testing. Photonic materials, devices, and systems were identified as critical technology areas by the Department of Commerce and the Department of Defense. This approach offers strong integration of basic material issues through engineering applications by the development of materials that can be exploited as the active unit in a variety of polymeric thin film devices. Improved materials were developed with unprecedented purity and stability. The absorptive properties can be tailored and controlled to provide significant improvement in propagation losses and nonlinear performance. Furthermore, the materials were incorporated into polymers that are highly compatible with fabrication and patterning processes for integrated optical devices and circuits. By simultaneously addressing the issues of materials development and characterization, keeping device design and fabrication in mind, many obstacles were overcome for implementation of these polymeric materials and devices into systems. We intend to considerably improve the upper use temperature, poling stability, and compatibility with silicon based devices. The principal device application that was targeted is a linear electro-optic modulation etalon. Organic polymers need to be properly designed and coupled with existing integrated circuit technology to create new photonic devices for optical communication, image processing, other laser applications such as harmonic generation, and eventually optical computing. The progression from microscopic sample to a suitable film

  2. Optical Constants of Cadmium Telluride Thin Film

    Science.gov (United States)

    Nithyakalyani, P.; Pandiaraman, M.; Pannir, P.; Sanjeeviraja, C.; Soundararajan, N.

    2008-04-01

    Cadmium Telluride (CdTe) is II-VI direct band gap semiconductor compound with potential application in Solar Energy conversion process. CdTe thin film of thickness 220 mn was prepared by thermal evaporation technique at a high vacuum better than 10-5 m.bar on well cleaned glass substrates of dimensions (l cm×3 cm). The transmittance spectrum and the reflectance spectrum of the prepared CdTc thin film was recorded using UV-Vis Spectrophotometer in the wavelength range between 300 nm and 900 nm. These spectral data were analyzed and the optical band and optical constants of CdTe Thin film have been determined by adopting suitable relations. The optical band gap of CdTe thin film is found to be 1.56 eV and this value is also agreeing with the published works of CdTe thin film prepared by various techniques. The absorption coefficient (α) has been higher than 106 cm-1. The Refractive index (n) and the Extinction Coefficient (k) are found to be varying from 3.0 to 4.0 and 0.1 Cm-1 to 0.5 Cm-1 respectively by varying the energy from l.0 eV to 4.0 eV. These results are also compared with the literature.

  3. Optical thin films and coatings from materials to applications

    CERN Document Server

    Flory, Francois

    2013-01-01

    Optical coatings, including mirrors, anti-reflection coatings, beam splitters, and filters, are an integral part of most modern optical systems. This book provides an overview of thin film materials, the properties, design and manufacture of optical coatings and their use across a variety of application areas.$bOptical coatings, including mirrors, anti-reflection coatings, beam splitters, and filters, are an integral part of most modern optical systems. Optical thin films and coatings provides an overview of thin film materials, the properties, design and manufacture of optical coatings and their use across a variety of application areas. Part one explores the design and manufacture of optical coatings. Part two highlights unconventional features of optical thin films including scattering properties of random structures in thin films, optical properties of thin film materials at short wavelengths, thermal properties and colour effects. Part three focusses on novel materials for optical thin films and coatings...

  4. Practical design and production of optical thin films

    CERN Document Server

    Willey, Ronald R

    2002-01-01

    Fundamentals of Thin Film Optics and the Use of Graphical Methods in Thin Film Design Estimating What Can Be Done Before Designing Fourier Viewpoint of Optical Coatings Typical Equipment for Optical Coating Production Materials and Process Know-How Process Development Monitoring and Control of Thin Film Growth Appendix: Metallic and Semiconductor Material Graphs Author IndexSubject Index

  5. Optical thin films user handbook

    CERN Document Server

    Rancourt, James D

    1996-01-01

    Practical, user-oriented reference for engineers who must incorporate and specify coatings for filters, antiglare effects, polarization, or other purposes in optical or electro-optical systems design. It focuses on preparation techniques and characteristics of commercially available products and provides information needed to determine what type of filter is needed to solve a particular problem, what its limitations are, and how to care for it.

  6. Thin-film optical shutter. Final report

    Energy Technology Data Exchange (ETDEWEB)

    Matlow, S.L.

    1981-02-01

    A specific embodiment of macroconjugated macromolecules, the poly (p-phenylene)'s, has been chosen as the one most likely to meet all of the requirements of the Thin Film Optical Shutter project (TFOS). The reason for this choice is included. In order to be able to make meaningful calculations of the thermodynamic and optical properties of the poly (p-phenylene)'s a new quantum mechanical method was developed - Equilibrium Bond Length (EBL) Theory. Some results of EBL Theory are included.

  7. Optical properties of thin polymer films

    Science.gov (United States)

    Kasarova, Stefka N.; Sultanova, Nina G.; Petrova, Tzveta; Dragostinova, Violeta; Nikolov, Ivan

    2009-10-01

    In this report three types of optical polymer thin films deposited on glass substrates are investigated. Transmission spectra of the polymer samples are obtained in the range from 400 nm to 1500 nm. A laser microrefractometer has been used to measure the refractive indices of the examined materials at 406, 656, 910 and 1320 nm. Dispersion properties of the polymer films are analyzed on the base of the Cauchy-Schott's and Sellmeier`s approximations. Dispersion coefficients are calculated and dispersion charts in the visible and near infrared spectral regions are presented and compared. Abbe numbers of mean and partial dispersion of the polymer films are obtained. Calculation of refractive indices at many laser emission wavelengths in the considered spectral range is accomplished.

  8. Optical and Nonlinear Optical Response of Light Sensor Thin Films

    Directory of Open Access Journals (Sweden)

    S. Z. Weisz

    2005-04-01

    Full Text Available For potential ultrafast optical sensor application, both VO2 thin films andnanocomposite crystal-Si enriched SiO2 thin films grown on fused quartz substrates weresuccessfully prepared using pulsed laser deposition (PLD and RF co-sputteringtechniques. In photoluminescence (PL measurement c-Si/SiO2 film containsnanoparticles of crystal Si exhibits strong red emission with the band maximum rangingfrom 580 to 750 nm. With ultrashort pulsed laser excitation all films show extremelyintense and ultrafast nonlinear optical (NLO response. The recorded holography fromall these thin films in a degenerate-four-wave-mixing configuration shows extremelylarge third-order response. For VO2 thin films, an optically induced semiconductor-tometalphase transition (PT immediately occurred upon laser excitation. it accompanied.It turns out that the fast excited state dynamics was responsible to the induced PT. For c-Si/SiO2 film, its NLO response comes from the contribution of charge carriers created bylaser excitation in conduction band of the c-Si nanoparticles. It was verified byintroducing Eu3+ which is often used as a probe sensing the environment variations. Itturns out that the entire excited state dynamical process associated with the creation,movement and trapping of the charge carriers has a characteristic 500 ps duration.

  9. Robust, Thin Optical Films for Extreme Environments

    Science.gov (United States)

    2006-01-01

    The environment of space presents scientists and engineers with the challenges of a harsh, unforgiving laboratory in which to conduct their scientific research. Solar astronomy and X-ray astronomy are two of the more challenging areas into which NASA scientists delve, as the optics for this high-tech work must be extremely sensitive and accurate, yet also be able to withstand the battering dished out by radiation, extreme temperature swings, and flying debris. Recent NASA work on this rugged equipment has led to the development of a strong, thin film for both space and laboratory use.

  10. Nonlinear optics of astaxanthin thin films

    Science.gov (United States)

    Esser, A.; Fisch, Herbert; Haas, Karl-Heinz; Haedicke, E.; Paust, J.; Schrof, Wolfgang; Ticktin, Anton

    1993-02-01

    Carotinoids exhibit large nonlinear optical properties due to their extended (pi) -electron system. Compared to other polyenes which show a broad distribution of conjugation lengths, carotinoids exhibit a well defined molecular structure, i.e. a well defined conjugation length. Therefore the carotinoid molecules can serve as model compounds to study the relationship between structure and nonlinear optical properties. In this paper the synthesis of four astaxanthins with C-numbers ranging from 30 to 60, their preparation into thin films, wavelength dispersive Third Harmonic Generation (THG) measurements and some molecular modelling calculations will be presented. Resonant (chi) (3) values reach 1.2(DOT)10-10 esu for C60 astaxanthin. In the nonresonant regime a figure of merit (chi) (3)/(alpha) of several 10-13 esu-cm is demonstrated.

  11. Optical modeling and simulation of thin-film photovoltaic devices

    CERN Document Server

    Krc, Janez

    2013-01-01

    In wafer-based and thin-film photovoltaic (PV) devices, the management of light is a crucial aspect of optimization since trapping sunlight in active parts of PV devices is essential for efficient energy conversions. Optical modeling and simulation enable efficient analysis and optimization of the optical situation in optoelectronic and PV devices. Optical Modeling and Simulation of Thin-Film Photovoltaic Devices provides readers with a thorough guide to performing optical modeling and simulations of thin-film solar cells and PV modules. It offers insight on examples of existing optical models

  12. Nonlinear optical microscopy for imaging thin films and surfaces

    Energy Technology Data Exchange (ETDEWEB)

    Smilowitz, L.B.; McBranch, D.W.; Robinson, J.M.

    1995-03-01

    We have used the inherent surface sensitivity of second harmonic generation to develop an instrument for nonlinear optical microscopy of surfaces and interfaces. We have demonstrated the use of several nonlinear optical responses for imaging thin films. The second harmonic response of a thin film of C{sub 60} has been used to image patterned films. Two photon absorption light induced fluorescence has been used to image patterned thin films of Rhodamine 6G. Applications of nonlinear optical microscopy include the imaging of charge injection and photoinduced charge transfer between layers in semiconductor heterojunction devices as well as across membranes in biological systems.

  13. Nonlinear optical properties of Au/PVP composite thin films

    Institute of Scientific and Technical Information of China (English)

    Shen Hong; Cheng Bo-Lin; Lu Guo-Wei; Wang Wei-Tian; Guan Dong-Yi; Chen Zheng-Hao; Yang Guo-Zhen

    2005-01-01

    Colloidal Au and poly(vinylpyrrolidone) (PVP) composite thin films are fabricated by spin-coating method. Linear optical absorption measurements of the Au/PVP composite films indicate an absorption peak around 530 nm due to the surface plasmon resonance of gold nanoparticles. Nonlinear optical properties are studied using standard Z-scan technique, and experimental results show large optical nonlinearities of the Au/PVP composite films. A large value of films.

  14. Optical properties of aluminum oxide thin films and colloidal nanostructures

    Energy Technology Data Exchange (ETDEWEB)

    Koushki, E., E-mail: ehsan.koushki@yahoo.com [Photonics Laboratory, Physics Faculty, Kharazmi University, Tehran (Iran, Islamic Republic of); Physics Department, Hakim Sabzevari University, Sabzevar (Iran, Islamic Republic of); Mousavi, S.H. [INM—Leibniz Institute for New Materials, Campus D2 2, 66123 Saarbrücken (Germany); Jafari Mohammadi, S.A. [INM—Leibniz Institute for New Materials, Campus D2 2, 66123 Saarbrücken (Germany); Department of Chemistry, College of Science, Islamshahr Branch, Islamic Azad University, Tehran (Iran, Islamic Republic of); Majles Ara, M.H. [Photonics Laboratory, Physics Faculty, Kharazmi University, Tehran (Iran, Islamic Republic of); Oliveira, P.W. de [INM—Leibniz Institute for New Materials, Campus D2 2, 66123 Saarbrücken (Germany)

    2015-10-01

    In this work, we prepared thin films of aluminum oxide (Al{sub 2}O{sub 3}) with different thicknesses, using a wet chemical process. The Al{sub 2}O{sub 3} nanoparticles with an average size of 40 nm were dispersed in water and deposited on soda glass substrates. The morphology of the resulting thin films was characterized by means of scanning electron microscopy. The optical properties of the thin films were studied by measuring reflectance and transmittance. A theoretical description of the reflection and transmission mechanism of the films was developed by measuring the thickness and spectral behavior of the refractive index. Numerical evaluations were used for modeling the optical spectra of the thin films of alumina. By fitting numerical curves to the experimental data, the extinction coefficient and refractive index were obtained. The dielectric constant and optical properties of the colloidal solution of the particles were also studied. - Highlights: • Optical properties of alumina thin films and nanocolloids were investigated. • New theoretical depiction of transmission and reflection from the thin films was evaluated. • Interference in reflection from thin films was studied. • Real and imaginary parts of the dielectric constant for alumina nanoparticles were calculated. • Using a novel method, evaluation of optical dispersion and UV–visible absorption were performed.

  15. Structural and Optical Properties of Nanoscale Galinobisuitite Thin Films

    Directory of Open Access Journals (Sweden)

    Omar H. Abd-Elkader

    2014-01-01

    Full Text Available Galinobisuitite thin films of (Bi2S3(PbS were prepared using the chemical bath deposition technique (CBD. Thin films were prepared by a modified chemical deposition process by allowing the triethanolamine (TEA complex of Bi3+ and Pb2+ to react with S2− ions, which are released slowly by the dissociation of the thiourea (TU solution. The films are polycrystalline and the average crystallite size is 35 nm. The composition of the films was measured using the atomic absorption spectroscopy (AAS technique. The films are very adherent to the substrates. The crystal structure of Galinobisuitite thin films was calculated by using the X-ray diffraction (XRD technique. The surface morphology and roughness of the films were studied using scanning electron microscopes (SEM, transmission electron microscopes (TEM and stylus profilers respectively. The optical band gaps of the films were estimated from optical measurements.

  16. Modeling plasmonic scattering combined with thin-film optics.

    Science.gov (United States)

    Schmid, M; Klenk, R; Lux-Steiner, M Ch; Topic, M; Krc, J

    2011-01-14

    Plasmonic scattering from metal nanostructures presents a promising concept for improving the conversion efficiency of solar cells. The determination of optimal nanostructures and their position within the solar cell is crucial to boost the efficiency. Therefore we established a one-dimensional optical model combining plasmonic scattering and thin-film optics to simulate optical properties of thin-film solar cells including metal nanoparticles. Scattering models based on dipole oscillations and Mie theory are presented and their integration in thin-film semi-coherent optical descriptions is explained. A plasmonic layer is introduced in the thin-film structure to simulate scattering properties as well as parasitic absorption in the metal nanoparticles. A proof of modeling concept is given for the case of metal-island grown silver nanoparticles on glass and ZnO:Al/glass substrates. Using simulations a promising application of the nanoparticle integration is shown for the case of CuGaSe(2) solar cells.

  17. Light waves in thin films and integrated optics.

    Science.gov (United States)

    Tien, P K

    1971-11-01

    Integrated optics is a far-reaching attempt to apply thin-film technology to optical circuits and devices, and, by using methods of integrated circuitry, to achieve a better and more economical optical system. The specific topics discussed here are physics of light waves in thin films, materials and losses involved, methods of couplings light beam into and out of a thin film, and nonlinear interactions in waveguide structures. The purpose of this paper is to review in some detail the important development of this new and fascinating field, and to caution the reader that the technology involved is difficult because of the smallness and perfection demanded by thin-film optical devices.

  18. Structure and Magneto-Optical Characteristic Study of Optical Multilayer Thin Films

    Institute of Scientific and Technical Information of China (English)

    YANG Cheng-tao

    2005-01-01

    @@ Based on the design theory of soft X-ray optical multilayer thin films and magneto-optic multilayer thin films, the metal multilayer thin films for the reflection of soft X-ray and ultraviolet ray, as well as the magneto-optic multilayer thin films for the magneto-optical memories were constructed. The metal multilayer thin films and the magneto-optic multilayer thin films were deposited with magnetron sputtering. The detail of optical reflection characteristics, layered-structure, and surface and interface characteristics were studied. At the same time,the static magneto-optical characteristics and dynamic magneto-optical characteristics of the magneto-optical disk were investigated.

  19. Optical properties of thin nanosilicon films

    Science.gov (United States)

    Buchenko, Viktor V.; Rodionova, Tatiana V.; Sutyagina, Anastasia S.; Goloborodko, Andrey A.; Multian, Volodymyr V.; Uklein, Andrii V.; Gayvoronsky, Volodymyr Ya.

    2016-12-01

    Present paper is devoted to the investigation of the nanosilicon films internal structure effect on optical properties. Atomic force microscopy results reveal that the films with different thickness have fundamentally different grain size distribution (samples with the film thickness less than 50 nm have single-mode grain size distribution, while samples with the film thickness more than 50 nm have multi-mode distribution of grain size). The correlation between grain size of nanosilicon films, photoluminescence and scattering indicatrix was shown. Well-isolated vibronic structures were observed on the ultraviolet-visible photoluminescence spectrum from nanosilicon films with the thickness more than 10 nm. The photoluminescence spectra in the red range correlate with the nanosilicon grain size distribution due to the effect of the quantum confinement. However, due to the complex shape of the grains mathematical modeling of photoluminescence spectrum is complicated. Both scattering indicatrix and photoluminescence reveal the multi-mode grain size distribution of the films with thickness more than 50 nm. The comparative analysis of theoretical results of optical radiation scattering by nanosilicon films with experimental ones is illustrated. Mathematical modeling of the scattering indicatrix shows the correlation of average grain size from scattering and photoluminescence data.

  20. Thin Film Solar Cells and their Optical Properties

    Directory of Open Access Journals (Sweden)

    Stanislav Jurecka

    2006-01-01

    Full Text Available In this work we report on the optical parameters of the semiconductor thin film for solar cell applications determination. The method is based on the dynamical modeling of the spectral reflectance function combined with the stochastic optimization of the initial reflectance model estimation. The spectral dependency of the thin film optical parameters computations is based on the optical transitions modeling. The combination of the dynamical modeling and the stochastic optimization of the initial theoretical model estimation enable comfortable analysis of the spectral dependencies of the optical parameters and incorporation of the microstructure effects on the solar cell properties. The results of the optical parameters ofthe i-a-Si thin film determination are presented.

  1. Optical properties of nanostructured InSe thin films

    Science.gov (United States)

    El-Nahass, M. M.; Saleh, Abdul-Basit A.; Darwish, A. A. A.; Bahlol, M. H.

    2012-03-01

    Thin films of InSe were prepared by thermal evaporation technique. The as-deposited films have nano-scale crystalline nature and the annealing enhanced the degree of crystallinity. The optical properties of nanocrystalline thin films of InSe were studied using spectrophotometric measurements of transmittance, T, and reflectance, R, at normal incidence of light in the wavelength range 200-2500 nm. The optical constants (refractive index, n, and absorption index, k) were calculated using a computer program based on Murmann's exact equations. The calculated optical constants are independent of the film thickness. The optical dispersion parameters have been analysed by single oscillator model. The type of transition in InSe films is indirect allowed with a value of energy gap equals to 1.10 eV, which increased to 1.23 eV upon annealing.

  2. Homogenization studies for optical sensors based on sculptured thin films

    OpenAIRE

    Jamaian, Siti Suhana

    2013-01-01

    In this thesis we investigate theoretically various types of sculptured thin film (STF) envisioned as platforms for optical sensing. A STF consists of an array of parallel nanowires which can be grown on a substrate using vapour deposition techniques. Typically, each nanowire has a diameter in the range from ~ 10-300 nmwhile the film thickness is ~

  3. Optical and Structural Properties of Ultra-thin Gold Films

    CERN Document Server

    Kossoy, Anna; Simakov, Denis; Leosson, Kristjan; Kéna-Cohen, Stéphane; Maier, Stefan A

    2014-01-01

    Realizing laterally continuous ultra-thin gold films on transparent substrates is a challenge of significant technological importance. In the present work, formation of ultra-thin gold films on fused silica is studied, demonstrating how suppression of island formation and reduction of plasmonic absorption can be achieved by treating substrates with (3-mercaptopropyl) trimethoxysilane prior to deposition. Void-free fi lms with deposition thickness as low as 5.4 nm are realized and remain structurally stable at room temperature. Based on detailed structural analysis of the fi lms by specular and diffuse X-ray reflectivity measurements, it is shown that optical transmission properties of continuous ultra-thin films can be accounted for using the bulk dielectric function of gold. However, it is important to take into account the non-abrupt transition zone between the metal and the surrounding dielectrics, which extends through several lattice constants for the laterally continuous ultra-thin films (film thickness...

  4. Optical properties of rubrene thin film prepared by thermal evaporation

    Institute of Scientific and Technical Information of China (English)

    陈亮; 邓金祥; 孔乐; 崔敏; 陈仁刚; 张紫佳

    2015-01-01

    Rubrene thin films are deposited on quartz substrates and silver nanoparticles (Ag NPs) films by the thermal evapo-ration technique. The optical properties of rubrene thin film are investigated in a spectral range of 190 nm–1600 nm. The analysis of the absorption coefficient (α) reveals direct allowed transition with a corresponding energy of 2.24 eV. The photoluminescence (PL) peak of the rubrene thin film is observed to be at 563 nm (2.21 eV). With the use of Ag NPs which are fabricated by radio-frequency (RF) magnetron sputtering on the quartz, the PL intensity is 8.5 times that of as-deposited rubrene thin film. It is attributed to the fact that the surface plasmon enhances the photoluminescence.

  5. Optical and dielectric properties of double helix DNA thin films

    Energy Technology Data Exchange (ETDEWEB)

    Soenmezoglu, Savas, E-mail: svssonmezoglu@kmu.edu.tr [Department of Physics, Faculty of Kamil Ozdag Science, Karamanoglu Mehmetbey University, 70100, Karaman (Turkey); Ates Soenmezoglu, Ozlem [Department of Biology, Faculty of Kamil Ozdag Science, Karamanoglu Mehmetbey University, 70100, Karaman (Turkey)

    2011-12-01

    In this work, the thin film of wheat DNA was deposited by spin-coating technique onto glass substrate, and the optical and dielectric properties of the double helix DNA thin film were investigated. The optical constants such as refractive index, extinction coefficient, dielectric constant, dissipation factor, relaxation time, and optical conductivity were determined from the measured transmittance spectra in the wavelength range 190-1100 nm. Meanwhile, the dispersion behavior of the refractive index was studied in terms of the single oscillator Wemple-DiDomenico (W-D) model, and the physical parameters of the average oscillator strength, average oscillator wavelength, average oscillator energy, the refractive index dispersion parameter and the dispersion energy were achieved. Furthermore, the optical band gap values were calculated by W-D model and Tauc model, respectively, and the values obtained from W-D model are in agreement with those determined from the Tauc model. The analysis of the optical absorption data indicates that the optical band gap E{sub g} was indirect transitions. These results provide some useful references for the potential application of the DNA thin films in fiber optic, solar cell and optoelectronic devices. Highlights: {yields} The optical constants of DNA in full UV-vis spectrum were determined. {yields} The change in optical and dielectric property demonstrates that this material has potential to be used as a novel technology. {yields} DNA shows promise to be more suitable material than other materials currently being used for photonic devices.

  6. Optical properties of CeO2 thin films

    Indian Academy of Sciences (India)

    S Debnath; M R Islam; M S R Khan

    2007-08-01

    Cerium oxide (CeO2) thin films have been prepared by electron beam evaporation technique onto glass substrate at a pressure of about 6 × 10-6 Torr. The thickness of CeO2 films ranges from 140–180 nm. The optical properties of cerium oxide films are studied in the wavelength range of 200–850 nm. The film is highly transparent in the visible region. It is also observed that the film has low reflectance in the ultra-violet region. The optical band gap of the film is determined and is found to decrease with the increase of film thickness. The values of absorption coefficient, extinction coefficient, refractive index, dielectric constant, phase angle and loss angle have been calculated from the optical measurements. The X-ray diffraction of the film showed that the film is crystalline in nature. The crystallite size of CeO2 films have been evaluated and found to be small. The experimental -values of the film agreed closely with the standard values.

  7. Optical properties of chalcogenide Ge-Te-In thin films

    Science.gov (United States)

    Zaidan, A.; Ivanova, V.; Petkov, P.

    2012-03-01

    Thin films of the chalcogenide (GeTe4)1-xInx with various compositions (x = 0, 5, 10, 15, 20 at %) were deposited under vacuum on glass substrates by thermal evaporation. The optical transmission and reflection spectra of the films at normal incidence were investigated in the spectral range from 800 to 2600 nm. Using the transmission spectra, the optical constants (refractive index (n) and extinction coefficient (k)) were calculated based on Swanepoel's method. The optical band gap (Egopt) was also estimated using Tauc's extrapolation procedure.

  8. Optical thin-film interference effects in microcantilevers

    Science.gov (United States)

    Wig, A.; Passian, A.; Arakawa, E.; Ferrell, T. L.; Thundat, T.

    2004-02-01

    We report direct observation of thin-film interference effects in microcantilevers, an effect that can impact the optical monitoring of the microcantilever motion. When microcantilevers are illuminated with different wavelengths of light the amount of absorption and the wavelengths of maxima in the absorption depend upon the thickness of the layers, the materials used in the layers, and the direction of illumination. Wavelengths of maximum absorption are observed as microcantilever deflections due to heat-induced bending of the bimaterial structure of the microcantilever. Results are presented for different multilayer configurations and illumination directions. These results are then compared with theoretical calculations based on multilayer thin-film analysis.

  9. Optically Thin Metallic Films for High-radiative-efficiency Plasmonics

    CERN Document Server

    Yang, Yi; Hsu, Chia Wei; Miller, Owen D; Joannopoulos, John D; Soljačić, Marin

    2016-01-01

    Plasmonics enables deep-subwavelength concentration of light and has become important for fundamental studies as well as real-life applications. Two major existing platforms of plasmonics are metallic nanoparticles and metallic films. Metallic nanoparticles allow efficient coupling to far field radiation, yet their synthesis typically leads to poor material quality. Metallic films offer substantially higher quality materials, but their coupling to radiation is typically jeopardized due to the large momentum mismatch with free space. Here, we propose and theoretically investigate optically thin metallic films as an ideal platform for high-radiative-efficiency plasmonics. For far-field scattering, adding a thin high-quality metallic substrate enables a higher quality factor while maintaining the localization and tunability that the nanoparticle provides. For near-field spontaneous emission, a thin metallic substrate, of high quality or not, greatly improves the field overlap between the emitter environment and ...

  10. Thin film metal coated fiber optic hydrophone probe.

    Science.gov (United States)

    Gopinath Minasamudram, Rupa; Arora, Piyush; Gandhi, Gaurav; Daryoush, Afshin S; El-Sherif, Mahmoud A; Lewin, Peter A

    2009-11-01

    Our purpose is to improve the performance sensitivity of a fiber sensor used as a fiber optic hydrophone probe (FOHP) by the addition of nanoscale thin film gold coating. The fiber is designed to provide a uniform and spatial averaging free response up to 100 MHz by etching down to an active diameter of approximately 9 mum. The performance sensitivity of straight cleaved (i.e., full size core and cladding) uncoated, tapered uncoated, and tapered thin film gold-coated fiber sensors was compared in the frequency range from 1.5 to 20 MHz in the presence of acoustic amplitude pressure levels as high as 6 MPa. An unprecedented voltage sensitivity of -245 dB relative to 1 V/muPa (560 mV/MPa) was measured for a thin film gold-coated FOHP by optimizing the gold coating thickness.

  11. The Physics of Thin Film Optical Spectra An Introduction

    CERN Document Server

    Stenzel, Olaf

    2005-01-01

    The book is intended to bridge the gap between fundamental physics courses (such as optics, electrodynamics, quantum mechanics and solid state physics) and highly specialized literature on the spectroscopy, design, and application of optical thin film coatings. Basic knowledge from the above-mentioned courses is therefore presumed. Starting from fundamental physics, the book enables the reader derive the theory of optical coatings and to apply it to practically important spectroscopic problems. Both classical and semiclassical approaches are included. Examples describe the full range of classical optical coatings in various spectral regions as well as highly specialized new topics such as rugate filters and resonant grating waveguide structures.

  12. Thin film detection of High Energy Materials: Optical Pumping Approach

    CERN Document Server

    Barthwal, Sachin

    2014-01-01

    We present our work on High Energy Material detection based on thin film of Lithium using the phenomenon of Optical Pumping. The Li atoms present in the thin film are optically pumped to one of the ground hyperfine energy levels so that they can no more absorb light from the resonant light source. Now in presence of a RF signal, which quantifies the ambient magnetic field, this polarized atomic system is again randomized thus making it reabsorb the resonant light. This gives a quantified measurement of the magnetic field surrounding the thin film detector. This is then mapped to the presence of magnetic HEM and hence the HEM are detected. Our approach in this regard starts with verifying the stability of Lithium atoms in various solvents so as to get a suitable liquid medium to form a thin film. In this regard, various UV-visible characterization spectra are presented to finally approach a stable system for the detection. We have worked on around 10 polar and non- polar solvents to see the stability criteria....

  13. Design of Gradient Index Optical Thin Films

    Science.gov (United States)

    1996-06-12

    Editors, Proc. SPIE, 2046:179-188 (1993). 2 Arfken , G. Mathematical Methods for Physicists (Third Edition). Orlando: Academic Press, 1985. 3 Berning, P. H...plasma," in Inhomogeneous and Quasi- Inhomogeneous Optical Coatings, J. A. Dobrowolski, P. G. Verly, Editors, Proc. SPIE, 2046:179-188 (1993). 2 Arfken ...Inhomogeneous Optical Coatings, J. A. Dobrowolski, P. G. Verly, Editors, Proc. SPIE, 2046:179-188 (1993). 2 Arfken , G. Mathematical Methods for Physicists

  14. Studies on thin film materials on acrylics for optical applications

    Indian Academy of Sciences (India)

    K Narasimha Rao

    2003-02-01

    Deposition of durable thin film coatings by vacuum evaporation on acrylic substrates for optical applications is a challenging job. Films crack upon deposition due to internal stresses and leads to performance degradation. In this investigation, we report the preparation and characterization of single and multi-layer films of TiO2, CeO2, Substance2 (E Merck, Germany), Al2O3, SiO2 and MgF2 by electron beam evaporation on both glass and PMMA substrates. Optical micrographs taken on single layer films deposited on PMMA substrates did not reveal any cracks. Cracks in films were observed on PMMA substrates when the substrate temperature exceeded 80°C. Antireflection coatings of 3 and 4 layers have been deposited and characterized. Antireflection coatings made on PMMA substrate using Substance2 (H2) and SiO2 combination showed very fine cracks when observed under microscope. Optical performance of the coatings has been explained with the help of optical micrographs.

  15. Nanocomposite thin films for optical temperature sensing

    Energy Technology Data Exchange (ETDEWEB)

    Ohodnicki, Jr., Paul R.; Brown, Thomas D.; Buric, Michael P.; Matranga, Christopher

    2017-02-14

    The disclosure relates to an optical method for temperature sensing utilizing a temperature sensing material. In an embodiment the gas stream, liquid, or solid has a temperature greater than about 500.degree. C. The temperature sensing material is comprised of metallic nanoparticles dispersed in a dielectric matrix. The metallic nanoparticles have an electronic conductivity greater than approximately 10.sup.-1 S/cm at the temperature of the temperature sensing material. The dielectric matrix has an electronic conductivity at least two orders of magnitude less than the dispersed metallic nanoparticles at the temperature of the temperature sensing material. In some embodiments, the chemical composition of a gas stream or liquid is simultaneously monitored by optical signal shifts through multiple or broadband wavelength interrogation approaches. In some embodiments, the dielectric matrix provides additional functionality due to a temperature dependent band-edge, an optimized chemical sensing response, or an optimized refractive index of the temperature sensing material for integration with optical waveguides.

  16. Optical and electrical properties of nickel xanthate thin films

    Indian Academy of Sciences (India)

    İ A Kariper; T Özpozan

    2014-05-01

    Nickel xanthate thin films (NXTF) were successfully deposited by chemical bath deposition, on to amorphous glass substrates, as well as on - and -silicon, indium tin oxide and poly(methyl methacrylate). The structure of the films was analysed by X-ray diffraction (XRD), far-infrared spectrum (FIR), mid-infrared (MIR) spectrum, nuclear magnetic resonance (NMR) and scanning electron microscopy (SEM). These films were investigated from their structural, optical and electrical properties point of view. Uniform distribution of grains was clearly observed from the photographs taken by scanning electron microscope (SEM). The higher transmittance was about 50–60% after optimizing the parameters of deposition time and temperature (4 h, 50 °C). The optical bandgap of the NXTF was graphically estimated as 3.90–3.96 eV. The resistivity of the films was calculated as 62.6–90.7 .cm on commercial glass depending on the film thickness and 62.2–74.5 .cm on the other substrates. The MIR and FIR spectra of the films conformed to the literature and their solid powder forms. The expected peaks of nickel xanthate were observed in NMR analysis on glass. The films were dipped into chloroform as organic solvent and were analysed by NMR.

  17. Prism coupling technique investigation of elasto-optical properties of thin polymer films

    NARCIS (Netherlands)

    Ay, Feridun; Kocabas, Askin; Kocabas, Coskun; Aydinli, Atilla; Agan, Sedat

    2004-01-01

    The use of thin polymer films in optical planar integrated optical circuits is rapidly increasing. Much interest, therefore, has been devoted to characterizing the optical and mechanical properties of thin polymer films. This study focuses on measuring the elasto-optical properties of three differen

  18. Optical properties of Ge-As-Te thin films

    Science.gov (United States)

    Aly, K. A.; Abd Elnaeim, A. M.; Uosif, M. A. M.; Abdel-Rahim, O.

    2011-11-01

    Different compositions of GexAs10Te90-x (x=5, 10, 15, 20, and 25 at%) chalcogenide glasses were prepared by the usual melt quench technique. Amorphous GexAs10Te90-x thin films were deposited onto cleaned glass substrates using the thermal evaporation method. Transmission spectra, T(λ), of the films at normal incidence were measured in the wavelength range 400-2500 nm. A straightforward analysis proposed by Swanepoel based on the use of the maxima and minima of the interference fringes has been used to drive the film thickness, d, the complex index of refraction, n, and the extinction coefficient, k. It was found that, the addition of Ge content at the expense of Te atoms shifts the optical band gap to the short wavelength side (blue shift of the optical band gap) while the refractive index are found to decreases. The obtained results of the refractive index were discussed in terms of the electronic polarizability and the single-oscillator Wemple and DiDomenico model (WDD). The optical absorption is due to the allowed non-direct optical transitions. The observed increase in the optical band gap with the increase in Ge content was discussed in terms of the width of the tail states in the gap and the covalent bond approach.

  19. Optical limiting effects in nanostructured silicon carbide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Borshch, A A; Starkov, V N; Volkov, V I; Rudenko, V I; Boyarchuk, A Yu [Institute of Physics, National Academy of Sciences of Ukraine, Kiev (Ukraine); Semenov, A V [Institute for Single Crystals of NAS of Ukraine (Ukraine)

    2013-12-31

    We present the results of experiments on the interaction of nanosecond laser radiation at 532 and 1064 nm with nanostructured silicon carbide thin films of different polytypes. We have found the effect of optical intensity limiting at both wavelengths. The intensity of optical limiting at λ = 532 nm (I{sub cl} ∼ 10{sup 6} W cm{sup -2}) is shown to be an order of magnitude less than that at λ = 1064 nm (I{sub cl} ∼ 10{sup 7} W cm{sup -2}). We discuss the nature of the nonlinearity, leading to the optical limiting effect. We have proposed a method for determining the amount of linear and two-photon absorption in material media. (nonlinear optical phenomena)

  20. The physics of thin film optical spectra an introduction

    CERN Document Server

    Stenzel, Olaf

    2016-01-01

    The book bridges the gap between fundamental physics courses (such as optics, electrodynamics, quantum mechanics and solid state physics) and highly specialized literature on the spectroscopy, design, and application of optical thin film coatings. Basic knowledge from the above-mentioned courses is therefore presumed. Starting from fundamental physics, the book enables the reader derive the theory of optical coatings and to apply it to practically important spectroscopic problems. Both classical and semiclassical approaches are included. Examples describe the full range of classical optical coatings in various spectral regions as well as highly specialized new topics such as rugate filters and resonant grating waveguide structures.The second edition has been updated and extended with respect to probing matter in different spectral regions, homogenous and inhomogeneous line broadening mechanisms and the Fresnel formula for the effect of planar interfaces.

  1. Optical Constants of Palladium Phthalocyanine Derivative Thin Films

    Institute of Scientific and Technical Information of China (English)

    吴谊群; 顾冬红; 干福熹; 王俊东; 陈耐生

    2002-01-01

    Ellipsometric parameters ora series of spin-coated thin films of palladium phthalocyanine derivatives with bromine and tetraalkoxyl substitutes (PdPc(OC8H17)4Brm, m = 0, 2, 3, 4) are determined from a rotating analyserpolarizer type of scanning ellipsometer. The optical, dielectric constants and absorption coefficients of the films in the 500-800nm wavelength region are reported. The results show that refractive index N (N = n- k),dielectric constant ε (ε =ε1 -ε2) and absorption coefficient α in the region 500-800nm are influenced by bromine atom substituted on the conjugated phthalocyanine ring regularly. It is found that there is approximately a linear relationship between the resonance absorption wavelengths of the films and the number of bromine atoms substituted on the phthalocyanine ring.

  2. Thin-film perovskites-ferroelectric materials for integrated optics

    Energy Technology Data Exchange (ETDEWEB)

    Walker, F.J. [Univ. of Tennessee, Knoxville, TN (United States)]|[Oak Ridge National Lab., TN (United States); McKee, R.A. [Oak Ridge National Lab., TN (United States)

    1995-12-31

    Optical guided wave (OGW) devices, based on LiNbO{sub 3} or GaAs. are commercially available products with established markets and applications. While LiNbO{sub 3} presently dominates the commercial applications, there are several drivers for the development of improved electro-optic (EO) materials. If the appropriate crystal quality could be obtained for thin-film BaTiO{sub 3} supported on MgO for example, or for an integrated BaTiO{sub 3}/Mg0 structure on silicon or GaAs, then the optimum OGW device structure might be realized. We report on our results for the growth of optical quality, epitaxial BaTiO{sub 3} and SrTiO{sub 3} on single-crystal MgO substrates using source shuttering molecular beam epitaxy (MBE) techniques. We also discuss how these materials can be integrated onto silicon. Our MBE studies show that, for this important class of perovskite oxides, heteroepitaxy between the perovskites and alkaline earth oxides is dominated by interfacial electrostatics at the first atomic layers. We have been able to demonstrate that a layer-by-layer energy minimization associated with interfacial electrostatics leads to the growth of high quality thin films of these materials. We have fabricated waveguides from these materials, and the optical clarity and loss coefficients have been characterized and found to be comparable to in-diffused waveguide structures typically represented by Ti drifted LiNbO{sub 3}.

  3. Study of Linear and Non-Linear Optical Parameters of Zinc Selenide Thin Film

    OpenAIRE

    Desai, H. N.; J. M. Dhimmar

    2015-01-01

    Thin film of Zinc Selenide (ZnSe) was deposited onto transparent glass substrate by thermal evaporation technique. ZnSe thin film was characterized by UV-Visible spectrophotometer within the wavelength range of 310 nm-1080 nm. The Linear optical parameters (linear optical absorption, extinction coefficient, refractive index and complex dielectric constant) of ZnSe thin film were analyzed from absorption spectra. The optical band gap and Urbach energy were obtained by Tauc’s equati...

  4. Transparent thin film polarizing and optical control systems

    Directory of Open Access Journals (Sweden)

    Nelson V. Tabiryan

    2011-06-01

    Full Text Available We show that a diffractive waveplate can be combined with a phase retardation film for fully converting light of arbitrary polarization state into a polarized light. Incorporating a photonic bandgap layer into a system of such polarizers that unify different polarization states in the input light into a single polarization state at its output, rather than absorbing or reflecting half of it, we developed and demonstrated a polarization-independent optical controller capable of switching between transmittive and reflective states. The transition between those states is smoothly controlled with low-voltage and low-power sources. Using versatile fabrication methods, this “universally polarizing optical controller” can be integrated into a thin package compatible with a variety of display, spatial light modulation, optical communication, imaging and other photonics systems.

  5. Defect enhanced optic and electro-optic properties of lead zirconate titanate thin films

    Directory of Open Access Journals (Sweden)

    M. M. Zhu

    2011-12-01

    Full Text Available Pb(Zr1-xTixO3 (PZT thin films near phase morphotropic phase boundary were deposited on (Pb0.86La0.14TiO3-coated glass by radio frequency sputtering. A retrieved analysis shows that the lattice parameters of the as-grown PZT thin films were similar to that of monoclinic PZT structure. Moreover, the PZT thin films possessed refractive index as high as 2.504 in TE model and 2.431 in TM model. The as-grown PZT thin film had one strong absorption peak at 632.6 nm, which attributed to lead deficiency by quantitative XPS analysis. From the attractive properties achieved, electro-optic and photovoltaic characteristic of the films were carried out.

  6. Investigation of local and nonlocal nonlinear optical refraction effect in IZO thin films

    Science.gov (United States)

    Htwe, Zin Maung; Zhang, Yun-Dong; Yao, Cheng-Bao; Li, Hui; Yuan, Ping

    2016-10-01

    We report the local and nonlocal nonlinear optical refraction properties of indium doped zinc oxide (IZO) thin films using closed aperture Z-scan technique. The Z-scan results show the films have positive nonlinear optical refraction properties. The nonlocal parameter m of samples is increased with indium. In both of local and nonlocal studies, the nonlinear optical refractions of thin films were increased with In contents and laser energy. This relation reveals the role of In composition in IZO affects on the nonlinear optical responses of the films. These results make the IZO thin films as the promising application in optoelectronics devices.

  7. Fast Industrial Inspection of Optical Thin Film Using Optical Coherence Tomography

    Directory of Open Access Journals (Sweden)

    Muhammad Faizan Shirazi

    2016-09-01

    Full Text Available An application of spectral domain optical coherence tomography (SD-OCT was demonstrated for a fast industrial inspection of an optical thin film panel. An optical thin film sample similar to a liquid crystal display (LCD panel was examined. Two identical SD-OCT systems were utilized for parallel scanning of a complete sample in half time. Dual OCT inspection heads were utilized for transverse (fast scanning, while a stable linear motorized translational stage was used for lateral (slow scanning. The cross-sectional and volumetric images of an optical thin film sample were acquired to detect the defects in glass and other layers that are difficult to observe using visual inspection methods. The rapid inspection enabled by this setup led to the early detection of product defects on the manufacturing line, resulting in a significant improvement in the quality assurance of industrial products.

  8. Optical and structural properties of sputtered CdS films for thin film solar cell applications

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Donguk [School of Electronic and Electrical Engineering, Sungkyunkwan University, Cheoncheon-dong 300, Jangan-gu, Suwon 440-746 (Korea, Republic of); Park, Young [High-Speed Railroad Infrastructure System Research Team, Korea Railroad Research Institute, Uiwang 437-757 (Korea, Republic of); Kim, Minha [School of Electronic and Electrical Engineering, Sungkyunkwan University, Cheoncheon-dong 300, Jangan-gu, Suwon 440-746 (Korea, Republic of); Choi, Youngkwan [Water Facility Research Center, K-water, 125, 1689 Beon-gil, Yuseong-daero, Yuseong-gu, Daejeon 305-730 (Korea, Republic of); Park, Yong Seob [Department of Photoelectronics Information, Chosun College of Science and Technology, Gwangju (Korea, Republic of); Lee, Jaehyoeng, E-mail: jaehyeong@skku.edu [School of Electronic and Electrical Engineering, Sungkyunkwan University, Cheoncheon-dong 300, Jangan-gu, Suwon 440-746 (Korea, Republic of)

    2015-09-15

    Graphical abstract: Photo current–voltage curves (a) and the quantum efficiency (QE) (b) for the solar cell with CdS film grown at 300 °C. - Highlights: • CdS thin films were grown by a RF magnetron sputtering method. • Influence of growth temperature on the properties of CdS films was investigated. • At higher T{sub g}, the crystallinity of the films improved and the grains enlarged. • CdS/CdTe solar cells with efficiencies of 9.41% were prepared at 300 °C. - Abstract: CdS thin films were prepared by radio frequency magnetron sputtering at various temperatures. The effects of growth temperature on crystallinity, surface morphology and optical properties of the films were characterized with X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), Raman spectra, UV–visible spectrophotometry, and photoluminescence (PL) spectra. As the growth temperature was increased, the crystallinity of the sputtered CdS films was improved and the grains were enlarged. The characteristics of CdS/CdTe thin film solar cell appeared to be significantly influenced by the growth temperature of the CdS films. Thin film CdS/CdTe solar cells with efficiencies of 9.41% were prepared at a growth temperature of 300 °C.

  9. Nonlinear optical susceptibility of multicomponent tellurite thin film glasses

    Science.gov (United States)

    Munoz-Martin, D.; Fernandez, H.; Fernandez-Navarro, J. M.; Gonzalo, J.; Solis, J.; Fierro, J. L. G.; Domingo, C.; Garcia-Ramos, J. V.

    2008-12-01

    Tellurite (TeO2-TiO2-Nb2O5) thin film glasses have been produced by pulsed laser deposition. The dispersion of the real and imaginary parts of the linear refractive index has been measured in the range from 300 to 1700 nm. Films present high refractive index (n =2.01) and reduced absorption (k nm. The nonlinear third order optical susceptibility (|χ(3)|) has been determined at four different wavelengths (600, 800, 1200, and 1500 nm). The out-of-resonance |χ(3)| values (˜10-12 esu) are found to be ten times higher than those of the bulk glass and 102 times higher than that of silica. Compositional and structural analysis reveals an increase of both the Ti atomic content and the fraction of nonbridging oxygen bonds in the deposited films. Both factors lead to a higher hyperpolarizability of the film constituents that is proposed to be responsible for the high |χ(3)| value of the films.

  10. Thin Films

    Directory of Open Access Journals (Sweden)

    M. Benmouss

    2003-01-01

    the optical absorption are consistent with the film color changes. Finally, the optical and electrochromic properties of the films prepared by this method are compared with those of our sputtered films already studied and with other works.

  11. Non-linear optics of nano-scale pentacene thin film

    Science.gov (United States)

    Yahia, I. S.; Alfaify, S.; Jilani, Asim; Abdel-wahab, M. Sh.; Al-Ghamdi, Attieh A.; Abutalib, M. M.; Al-Bassam, A.; El-Naggar, A. M.

    2016-07-01

    We have found the new ways to investigate the linear/non-linear optical properties of nanostructure pentacene thin film deposited by thermal evaporation technique. Pentacene is the key material in organic semiconductor technology. The existence of nano-structured thin film was confirmed by atomic force microscopy and X-ray diffraction. The wavelength-dependent transmittance and reflectance were calculated to observe the optical behavior of the pentacene thin film. It has been observed the anomalous dispersion at wavelength λ 800. The non-linear refractive index of the deposited films was investigated. The linear optical susceptibility of pentacene thin film was calculated, and we observed the non-linear optical susceptibility of pentacene thin film at about 6 × 10-13 esu. The advantage of this work is to use of spectroscopic method to calculate the liner and non-liner optical response of pentacene thin films rather than expensive Z-scan. The calculated optical behavior of the pentacene thin films could be used in the organic thin films base advanced optoelectronic devices such as telecommunications devices.

  12. Hard X-ray quantum optics in thin films nanostructures

    Energy Technology Data Exchange (ETDEWEB)

    Haber, Johann Friedrich Albert

    2017-05-15

    This thesis describes quantum optical experiments with X-rays with the aim of reaching the strong-coupling regime of light and matter. We make use of the interaction which arises between resonant matter and X-rays in specially designed thin-film nanostructures which form X-ray cavities. Here, the resonant matter are Tantalum atoms and the Iron isotope {sup 57}Fe. Both limit the number of modes available to the resonant atoms for interaction, and enhances the interaction strength. Thus we have managed to observe a number of phenomena well-known in quantum optics, which are the building blocks for sophisticated applications in e.g. metrology. Among these are the strong coupling of light and matter and the concurrent exchange of virtual photons, often called Rabi oscillations. Furthermore we have designed and tested a type of cavity hitherto unused in X-ray optics. Finally, we develop a new method for synchrotron Moessbauer spectroscopy, which not only promises to yield high-resolution spectra, but also enables the retrieval of the phase of the scattered light. The results open new avenues for quantum optical experiments with X-rays, particularly with regards to the ongoing development of high-brilliance X-ray free-electron lasers.

  13. Optically Transparent Thin-Film Electrode Chip for Spectroelectrochemical Sensing

    Energy Technology Data Exchange (ETDEWEB)

    Branch, Shirmir D.; Lines, Amanda M.; Lynch, John A.; Bello, Job M.; Heineman, William R.; Bryan, Samuel A.

    2017-07-03

    The electrochemical and spectroelectrochemical applications of an optically transparent thin film electrode chip are investigated. The working electrode is composed of indium tin oxide (ITO); the counter and quasi-reference electrodes are composed of platinum. The stability of the platinum quasi-reference electrode is modified by coating it with a planar, solid state Ag/AgCl layer. The Ag/AgCl reference is characterized with scanning electron microscopy and energy-dispersive X-ray spectroscopy. Open circuit potential measurements indicate that the potential of the planar Ag/AgCl electrode varies a maximum of 20 mV over four days. Cyclic voltammetry measurements show that the electrode chip is comparable to a standard electrochemical cell. Randles-Sevcik analysis of 10 mM K3[Fe(CN)6] in 0.1 M KCl using the electrode chip shows a diffusion coefficient of 1.59 × 10-6 cm2/s, in comparison to the standard electrochemical cell value of 2.38 × 10-6 cm2/s. By using the electrode chip in an optically transparent thin layer electrode (OTTLE), the spectroelectrochemical modulation of [Ru(bpy)3]2+ florescence was demonstrated, achieving a detection limit of 36 nM.

  14. Optical characterization of ZnO thin films deposited by RF magnetron sputtering method

    Institute of Scientific and Technical Information of China (English)

    2009-01-01

    This study investigated the process parameter effects on the structural and optical properties of ZnO thin film using radio frequency (RF) magnetron sputtering on amorphous glass substrates. The process parameters included RF power and working pressure. Results show that RF power was increased to promote the crystalline quality and decrease ZnO thin film defects. However, when the working pressure was increased to 3 Pa the ZnO thin film crystalline quality became worse. At a 200 W RF power and 1 Pa working pressure, the ZnO thin film with an optical band gap energy of 3.225 eV was obtained.

  15. Optical study of dye-containing fluorinated polyimide thin films

    Science.gov (United States)

    Quaranta, A.; Carturan, S.; Maggioni, G.; Della Mea, G.; Ischia, M.; Campostrini, R.

    Thin films of dye-containing fluorinated polyimide have been obtained by adding the dye powder to the polyamic acid resin and by spin coating the resulting solution on silica and silicon substrates. 6FDA (4,4'-hexafluoroisopropylidene diphthalic anhydride) and DAB (diaminobenzophenone) have been used as precursor monomers and rhodamine B as dye. The influence of the rhodamine-B molecule on the completeness of the imidization process has been studied by coupled thermogravimetric and mass-spectrometric analyses (TG-MS) of pure and doped polyamic acid resin and by FT-IR analysis of samples before and after curing. Optical emission, excitation and absorption spectra have been collected in order to study spectroscopic and aggregation characteristics of rhodamine as a function of the deposition parameters.

  16. Model of a thin film optical fiber fluorosensor

    Science.gov (United States)

    Egalon, Claudio O.; Rogowski, Robert S.

    1991-03-01

    The efficiency of core-light injection from sources in the cladding of an optical fiber is modeled analytically by means of the exact field solution of a step-profile fiber. The analysis is based on the techniques by Marcuse (1988) in which the sources are treated as infinitesimal electric currents with random phase and orientation that excite radiation fields and bound modes. Expressions are developed based on an infinite cladding approximation which yield the power efficiency for a fiber coated with fluorescent sources in the core/cladding interface. Marcuse's results are confirmed for the case of a weakly guiding cylindrical fiber with fluorescent sources uniformly distributed in the cladding, and the power efficiency is shown to be practically constant for variable wavelengths and core radii. The most efficient fibers have the thin film located at the core/cladding boundary, and fibers with larger differences in the indices of refraction are shown to be the most efficient.

  17. Optical Characterization of Different Thin Film Module Technologies

    Directory of Open Access Journals (Sweden)

    R. Ebner

    2015-01-01

    Full Text Available For a complete quality control of different thin film module technologies (a-Si, CdTe, and CIS a combination of fast and nondestructive methods was investigated. Camera-based measurements, such as electroluminescence (EL, photoluminescence (PL, and infrared (IR technologies, offer excellent possibilities for determining production failures or defects in solar modules which cannot be detected by means of standard power measurements. These types of optical measurement provide high resolution images with a two-dimensional distribution of the characteristic features of PV modules. This paper focuses on quality control and characterization using EL, PL, and IR imaging with conventional cameras and an alternative excitation source for the PL-setup.

  18. Structural and nonlinear optical properties of as-grown and annealed metallophthalocyanine thin films

    Energy Technology Data Exchange (ETDEWEB)

    Zawadzka, A., E-mail: azawa@fizyka.umk.pl [Institute of Physics, Faculty of Physics, Astronomy and Informatics, Nicolaus Copernicus University, Grudziadzka 5, 87-100 Torun (Poland); Płóciennik, P.; Strzelecki, J. [Institute of Physics, Faculty of Physics, Astronomy and Informatics, Nicolaus Copernicus University, Grudziadzka 5, 87-100 Torun (Poland); Pranaitis, M.; Dabos-Seignon, S.; Sahraoui, B. [LUNAM Université, Université d' Angers, CNRS UMR 6200, Laboratoire MOLTECH-Anjou, 2 bd Lavoisier, 49045 Angers cedex (France)

    2013-10-31

    The paper presents the Third Harmonic Generation investigation of four metallophtalocyanine (MPc, M = Cu, Co, Mg and Zn) thin films. The investigated films were fabricated by Physical Vapor Deposition in high vacuum onto quartz substrates. MPc thin films were annealed after fabrication in ambient atmosphere for 12 h at the temperature equal to 150 °C or 250 °C. The Third Harmonic Generation spectra were measured to investigate the nonlinear optical properties and their dependence on the structure of the thin film after the annealing process. This approach allowed us to determine the electronic contribution of the third-order nonlinear optical susceptibility χ{sup <3>}{sub elec} of these MPc films and to investigate two theoretical models for explanation of the observed results. We find that the annealing process significantly changes the optical and structural properties of MPc thin films. - Highlights: • Metallophtalocyanine thin films were grown by Physical Vapor Deposition technique. • MPcs thin films were undergone an annealing process in ambient atmosphere. • Third Harmonic spectra were measured to investigate nonlinear optical properties. • The third order nonlinear optical susceptibility χ{sup <3>}{sub elec} was determined. • We report changing both nonlinear optical and structural properties of thin films.

  19. Development of Dual-light Path Monitoring System of Optical Thin-film Thickness

    Institute of Scientific and Technical Information of China (English)

    XU Shi-jun

    2005-01-01

    The accurate monitoring of optical thin-film thickness is a key technique for depositing optical thin-film. For existing coating equipments, which are low precision and automation level on monitoring thin-film thickness, a new photoelectric control and analysis system has been developed. In the new system, main techniques include a photoelectric system with dual-light path, a dual-lock-phase circuit system and a comprehensive digital processing-control-analysis system.The test results of new system show that the static and dynamic stabilities and the control precision of thin-film thickness are extremely increased. The standard deviation of thin-film thickness, which indicates the duplication of thin-film thickness monitoring, is equal to or less than 0.72%. The display resolution limit on reflectivity is 0.02 %. In the system, the linearity of drift is very high, and the static drift ratio approaches zero.

  20. Optical constants and nonlinear calculations of fluorescein/FTO thin film optical system

    Science.gov (United States)

    Zahran, H. Y.; Iqbal, Javed; Yahia, I. S.

    2016-11-01

    The organic thin films of fluorescein dye were deposited on fluorine-doped tin oxide glass substrate by using low-cost spin coating technique. The surface of the deposited film was characterized by using AFM and X-ray diffraction spectroscopy, which shows that the film is uniform and amorphous. The spectrophotometric study was carried out at the wavelength range of 300-2500 nm. The spectral dependences of the linear refractive index and absorption index were found to decrease as the wavelength was increased. Tauc's plot study revealed that the film shows the direct transition and energy band gap values were found 1.75 eV and 3.55 eV for the thin film and the substrate, respectively. Optical constants were found nearly the same in the higher energy domain (1.0-4.5 eV). Spectroscopic method was employed to study the nonlinear optical susceptibility χ (3). The deposited thin film is a promising optical system for new generation of optoelectronics.

  1. Optical Characterization of Porous Sputtered Silver Thin Films

    Directory of Open Access Journals (Sweden)

    Olivier Carton

    2013-01-01

    Full Text Available The optical properties of various porous silver films, grown with a commercial DC sputter coater, were investigated and compared for different plasma parameters. Effective Drude models were successfully used for those films whose spectra did not show particular resonance peaks. For the other films, neither an effective Drude model nor effective medium models (Maxwell Garnett, Bruggeman, and Looyenga can describe the optical properties. It turns out that a more general approach like the Bergman representation describes the optical data of these films accurately adopting porosity values consistent with physical measurements.

  2. Optical Thin Film Modeling: Using FTG's FilmStar Software

    Science.gov (United States)

    Freese, Scott

    2009-01-01

    Every material has basic optical properties that define its interaction with light: The index of refraction (n) and extinction coefficient (k) vary for the material as a function of the wavelength of the incident light. Also significant are the phase velocity and polarization of the incident light These inherent properties allow for the accurate modeling of light s behavior upon contact with a surface: Reflectance, Transmittance, Absorptance.

  3. Optical characterization of Cu3N thin film with Swanepoel method

    Science.gov (United States)

    Dorranian, Davoud; Dejam, Laya; Mosayebian, Gelareh

    2012-07-01

    Swanepoel method is employed for spectroscopic determination of optical properties of Cu3N thin film using transmittance data. Investigated films have been deposited using reactive magnetron sputtering system. Deposition time was 9 to 21 min. Refractive index, absorption coefficient, and bandgap energy of the samples are determined. Thickness of the films is calculated by Swanepoel method, and result is compared with the thickness of the films measured by profilmeter. It is shown that Swanepoel method is a reliable way to calculate the optical constants of thin films when the transmittance spectrum of the film is influenced by wavelike patterns due to reflection of the probe beam from different interfaces.

  4. Optical and structural properties of CsI thin film photocathode

    OpenAIRE

    2014-01-01

    In the present work performance of cesium iodide thin film photocathode is studied in detail. The optical absorbance of cesium iodide thin films have been analyzed in the spectral range of 190 nm to 900 nm. The optical band gap energy of 500 nm thick cesium iodide film is calculated using Tauc plot from absorbance data. Refractive index is estimated from envelope plot of transmittance data using Swanepoel's method. Absolute quantum efficiency measurement has been carried out in the wavelength...

  5. Nonlinear Optical Properties of Organic and Polymeric Thin Film Materials of Potential for Microgravity Processing Studies

    Science.gov (United States)

    Abdeldayem, Hossin; Frazier, Donald O.; Paley, Mark S.; Penn, Benjamin; Witherow, William K.; Bank, Curtis; Shields, Angela; Hicks, Rosline; Ashley, Paul R.

    1996-01-01

    In this paper, we will take a closer look at the state of the art of polydiacetylene, and metal-free phthalocyanine films, in view of the microgravity impact on their optical properties, their nonlinear optical properties and their potential advantages for integrated optics. These materials have many attractive features with regard to their use in integrated optical circuits and optical switching. Thin films of these materials processed in microgravity environment show enhanced optical quality and better molecular alignment than those processed in unit gravity. Our studies of these materials indicate that microgravity can play a major role in integrated optics technology. Polydiacetylene films are produced by UV irradiation of monomer solution through an optical window. This novel technique of forming polydiacetylene thin films has been modified for constructing sophisticated micro-structure integrated optical patterns using a pre-programmed UV-Laser beam. Wave guiding through these thin films by the prism coupler technique has been demonstrated. The third order nonlinear parameters of these films have been evaluated. Metal-free phthalocyanine films of good optical quality are processed in our laboratories by vapor deposition technique. Initial studies on these films indicate that they have excellent chemical, laser, and environmental stability. They have large nonlinear optical parameters and show intrinsic optical bistability. This bistability is essential for optical logic gates and optical switching applications. Waveguiding and device making investigations of these materials are underway.

  6. Optical properties of PMN-PT thin films prepared using pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Tong, X.L., E-mail: tongxinglin@yahoo.com.cn [Key Laboratory of Fiber Optic Sensing Technology and Information Processing, Wuhan University of Technology, Ministry of Education, 122 Luoshi Road, Wuhan 430070 (China); Lin, K.; Lv, D.J.; Yang, M.H.; Liu, Z.X.; Zhang, D.S. [Key Laboratory of Fiber Optic Sensing Technology and Information Processing, Wuhan University of Technology, Ministry of Education, 122 Luoshi Road, Wuhan 430070 (China)

    2009-06-30

    (1 - x)Pb(Mg{sub 1/3}Nb{sub 2/3})O{sub 3}-xPbTiO{sub 3} (PMN-PT) thin films have been deposited on quartz substrates using pulsed laser deposition (PLD). Crystalline microstructure of the deposited PMN-PT thin films has been investigated with X-ray diffraction (XRD). Optical transmission spectroscopy and Raman spectroscopy are used to characterize optical properties of the deposited PMN-PT thin films. The results show that the PMN-PT thin films of perovskite structure have been formed, and the crystalline and optical properties of the PMN-PT thin films can be improved as increasing the annealing temperature to 750 deg. C, but further increasing the annealing temperature to 950 deg. C may lead to a degradation of the crystallinity and the optical properties of the PMN-PT thin films. In addition, a weak second harmonic intensity (SHG) has been observed for the PMN-PT thin film formed at the optimum annealing temperature of 750 deg. C according to Maker fringe method. All these suggest that the annealing temperature has significant effect on the structural and optical properties of the PMN-PT thin films.

  7. Nonlinear optical parameters of nanocrystalline AZO thin film measured at different substrate temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Jilani, Asim, E-mail: asim.jilane@gmail.com [Centre of Nanotechnology, King Abdulaziz University, Jeddah (Saudi Arabia); Abdel-wahab, M.Sh [Centre of Nanotechnology, King Abdulaziz University, Jeddah (Saudi Arabia); Materials Science and Nanotechnology Department, Faculty of Postgraduate Studies for Advanced Sciences, Beni -Suef University, Beni-Suef (Egypt); Al-ghamdi, Attieh A. [Centre of Nanotechnology, King Abdulaziz University, Jeddah (Saudi Arabia); Dahlan, Ammar sadik [Department of architecture, faculty of environmental design, King Abdulaziz University, Jeddah (Saudi Arabia); Yahia, I.S. [Department of Physics, Faculty of Science, King Khalid University, P.O. Box 9004, Abha (Saudi Arabia); Nano-Science & Semiconductor Labs, Department of Physics, Faculty of Education, Ain Shams University, Roxy, 11757 Cairo (Egypt)

    2016-01-15

    The 2.2 wt% of aluminum (Al)-doped zinc oxide (AZO) transparent and preferential c-axis oriented thin films were prepared by using radio frequency (DC/RF) magnetron sputtering at different substrate temperature ranging from room temperature to 200 °C. For structural analysis, X-ray Diffraction (XRD) and Atomic Force Electron Microscope (AFM) was used for morphological studies. The optical parameters such as, optical energy gap, refractive index, extinction coefficient, dielectric loss, tangent loss, first and third order nonlinear optical properties of transparent films were investigated. High transmittance above 90% and highly homogeneous surface were observed in all samples. The substrate temperature plays an important role to get the best transparent conductive oxide thin films. The substrate temperature at 150 °C showed the growth of highly transparent AZO thin film. Energy gap increased with the increased in substrate temperature of Al doped thin films. Dielectric constant and loss were found to be photon energy dependent with substrate temperature. The change in substrate temperature of Al doped thin films also affect the non-liner optical properties of thin films. The value of χ{sup (3)} was found to be changed with the grain size of the thin films that directly affected by the substrate temperature of the pure and Al doped ZnO thin films.

  8. Optical study of thin-film photovoltaic cells with apparent optical path length

    Science.gov (United States)

    Cho, Changsoon; Jeong, Seonju; Lee, Jung-Yong

    2016-09-01

    Extending the insufficient optical path length (OPL) in thin-film photovoltaic cells (PVs) is the key to achieving a high power conversion efficiency (PCE) in devices. Here, we introduce the apparent OPL (AOPL) as a figure of merit for light absorbing capability in thin-film PVs. The optical characteristics such as the structural effects and angular responses in thin-film PVs were analyzed in terms of the AOPL. Although the Lambertian scattering surface yields a broadband absorption enhancement in thin-film PVs, the enhancement is not as effective as in thick-film PVs. On the other hand, nanophotonic schemes are introduced as an approach to increasing the single-pass AOPL by inducing surface plasmon resonance. The scheme using periodic metal gratings is proved to increase the AOPL in a narrow wavelength range and specific polarization, overcoming the Yablonovitch limit. The AOPL calculation can be also adopted in the experimental analysis and a maximum AOPL of 4.15d (where d is the active layer thickness) is exhibited in the absorption band edge region of PTB7:PC70BM-based polymer PVs.

  9. Magnetic and optical properties of the nickel thin film deposited by GLAD technique

    Directory of Open Access Journals (Sweden)

    Potočnik Jelena M.

    2014-01-01

    Full Text Available In this work, nickel thin film was deposited on glass sample using Glancing Angle Deposition (GLAD technique, to a thickness of 1 μm. Glass sample was positioned 15 degrees with respect to the nickel vapor flux. The nickel thin film was characterized by Atomic Force Microscopy (AFM, Magneto- Optical Kerr effect Microscopy and Spectroscopic Ellipsometry. According to an AFM cross-section imaging, it was found that the nickel thin film has a columnar structure. The values of the coercively, obtained from the magnetic hysteresis loops, were analyzed as a function of the sample rotation in the magnetic field. It was found that the direction of magnetization easy axis lies toward the structure growth. Optical properties of the nickel thin film were studied at the wavelength of 455 nm. From the shape of the refractive index and the extinction coefficient diagrams could be concluded that the nickel thin film has an optical anisotropy.

  10. Raman spectroscopy of optical properties in CdS thin films

    Directory of Open Access Journals (Sweden)

    Trajić J.

    2015-01-01

    Full Text Available Properties of CdS thin films were investigated applying atomic force microscopy (AFM and Raman spectroscopy. CdS thin films were prepared by using thermal evaporation technique under base pressure 2 x 10-5 torr. The quality of these films was investigated by AFM spectroscopy. We apply Raman scattering to investigate optical properties of CdS thin films, and reveal existence of surface optical phonon (SOP mode at 297 cm-1. Effective permittivity of mixture were modeled by Maxwell - Garnet approximation. [Projekat Ministarstva nauke Republike Srbije, br. 45003

  11. Chemically deposited Sb{sub 2}S{sub 3} thin films for optical recording

    Energy Technology Data Exchange (ETDEWEB)

    Shaji, S; Arato, A; Castillo, G Alan; Palma, M I Mendivil; Roy, T K Das; Krishnan, B [Facultad de IngenierIa Mecanica y Electrica, Universidad Autonoma de Nuevo Leon, San Nicolas de los Garza, Nuevo Leon, C.P- 66450 (Mexico); O' Brien, J J; Liu, J, E-mail: bkrishnan@fime.uanl.m [Center for Nanoscience and Department of Chemistry and Biochemistry, University of Missouri-St. Louis, One Univ. Blvd., St. Louis, MO - 63121 (United States)

    2010-02-24

    Laser induced changes in the properties of Sb{sub 2}S{sub 3} thin films prepared by chemical bath deposition are described in this paper. Sb{sub 2}S{sub 3} thin films of thickness 550 nm were deposited from a solution containing SbCl{sub 3} and Na{sub 2}S{sub 2}O{sub 3} at 27 {sup 0}C for 5 h. These thin films were irradiated by a 532 nm continuous wave laser beam under different conditions at ambient atmosphere. X-ray diffraction analysis showed amorphous to polycrystalline transformation due to laser exposure of these thin films. Morphology and composition of these films were described. Optical properties of these films before and after laser irradiation were analysed. The optical band gap of the material was decreased due to laser induced crystallization. The results obtained confirm that there is further scope for developing this material as an optical recording media.

  12. Structural and optical properties of Cd0.8Zn0.2S thin films

    Science.gov (United States)

    Xia, Di; Caijuan, Tian; Rongzhe, Tang; Wei, Li; Lianghuan, Feng; Jingquan, Zhang; Lili, Wu; Zhi, Lei

    2011-02-01

    Cd1-xZnxS thin films were deposited on glass substrates by a vacuum coevaporation method. The structural, compositional, and optical properties of as-deposited Cd0.8Zn0.2S films were investigated using X-ray diffraction (XRD), X-ray fluorescence (XRF), X-ray photoelectron spectroscopy (XPS), and optical transmittance spectrum. The thin films are hexagonal in structure, with strong preferential orientation along the (002) planes. The composition of Cd1-xZnxS thin films monitored by a quartz crystal oscillator agrees well with that obtained from XRF and XPS measurements. The optical constants, such as refractive index, single-oscillator energy, dispersion energy, absorption coefficients, and the optical band gap, were deduced by the Swanepoel's method, in combination with the Wemple and DiDomenico single-oscillator model, from the transmission spectrum of Cd0.8Zn0.2S thin films.

  13. Structural and optical properties of Cd0.8Zn0.2S thin films*

    Institute of Scientific and Technical Information of China (English)

    Di Xia; Tian Caijuan; Tang Rongzhe; Li Wei; Feng Lianghuan; Zhang Jingquan; Wu Lili; Lei Zhi

    2011-01-01

    Cd1-xZnxS thin films were deposited on glass substrates by a vacuum coevaporation method. The structural, compositional, and optical properties of as-deposited Cd0.8Zn0.2S films were investigated using X-ray diffraction (XRD), X-ray fluorescence (XRF), X-ray photoelectron spectroscopy (XPS), and optical transmittance spectrum. The thin films are hexagonal in structure, with strong preferential orientation along the (002) planes. The composition of Cd1-xZnxS thin films monitored by a quartz crystal oscillator agrees well with that obtained from XRF and XPS measurements. The optical constants, such as refractive index, single-oscillator energy, dispersion energy, absorption coefficients, and the optical band gap, were deduced by the Swanepoel's method, in combination with the Wemple and DiDomenico single-oscillator model, from the transmission spectrum of Cd0.8Zn0.2S thin films.

  14. Growth of oxide thin films for optical gas sensor applications

    Energy Technology Data Exchange (ETDEWEB)

    Caiteanu, D. [Lasers Department, Institute of Atomic Physics, P.O. Box MG 36, 76900 Bucharest V (Romania); Gyoergy, E. [Lasers Department, Institute of Atomic Physics, P.O. Box MG 36, 76900 Bucharest V (Romania)]. E-mail: eniko@ifin.nipne.ro; Grigorescu, S. [Lasers Department, Institute of Atomic Physics, P.O. Box MG 36, 76900 Bucharest V (Romania); Mihailescu, I.N. [Lasers Department, Institute of Atomic Physics, P.O. Box MG 36, 76900 Bucharest V (Romania); Prodan, G. [University ' Ovidius' of Constanta, Mamaia Bd., 124, Constanta 900527 (Romania); Ciupina, V. [University ' Ovidius' of Constanta, Mamaia Bd., 124, Constanta 900527 (Romania)

    2006-04-30

    Tungsten trioxide and titanium dioxide thin films were synthesised by pulsed laser deposition. We used for irradiations of oxide targets an UV KrF* ({lambda} = 248 nm, {tau} {sub FWHM} {approx_equal} 20 ns, {nu} = 2 Hz) excimer laser source, at 2 J/cm{sup 2} incident fluence value. The experiments were performed in low oxygen pressure. The (0 0 1) SiO{sub 2} substrates were heated during the thin film deposition process at temperature values within the 300-500 deg. Crange. The structure and crystalline status of the obtained oxide thin films were investigated by high resolution transmission electron microscopy. Our analyses show that the films are composed by nanoparticles with average diameters from a few to a few tens of nm. Moreover, the films deposited at substrate temperatures higher than 300 deg. Care crystalline. The tungsten trioxide films consist of a mixture of triclinic and monoclinic phases, while the titanium dioxide films structure corresponds to the tetragonal anatase phase. The oxide films average transmittance in the visible-infrared spectral range is higher than 80%, which makes them suitable for sensor applications.

  15. Improvement of optical properties of TiO2 thin film treated with electron beam.

    Science.gov (United States)

    Shin, Joong-Hyeok; Lee, Byung Cheol; Woo, Hee-Gweon; Hwang, Kwang Ha; Jun, Jin

    2013-03-01

    Nanocrystalline titanium dioxide (TiO2) thin films on silicon wafer substrates were prepared by sol-gel spin coating process. The prepared thin films were treated with electron beam (1.1 MeV, 300 kGy) at air atmosphere. The effects of electron-beam (EB) irradiation on the structural and optical properties of the TiO2 thin films were investigated. The structures of all the TiO2 thin films by XRD analysis showed an anatase phase, and the phase remained unchanged within the investigating range of EB treatment. The thickness of the titania thin film decreased slightly with EB treatment whereas the porosity increased. The EB treatment of TiO2 thin film can increase the proportion of Ti3+ in Ti2p at the thin film surface. The optical transmittance of the film in the wavelength ranges of above 380 nm increased after the EB treatment while its refractive index decreased with increasing EB dose. Therefore, improvement of the optical properties could be due to the change in both surface chemistry and morphology of the TiO2 thin films affected by EB irradiation.

  16. Isomerization and optical bistability of DR1 doped organic-inorganic sol-gel thin film

    Science.gov (United States)

    Gao, Tianxi; Que, Wenxiu; Shao, Jinyou

    2015-10-01

    To investigate the isomerization process of the disperse red 1 (DR1) doped TiO2/ormosil thin film, both the photo-isomerization and the thermal isomerization of the thin films were observed as a change of the absorption spectrum. Under a real-time heat treatment, the change of the linear refractive index shows a thermal stable working temperature range below Tg. The optical bistability (OB) effect of the DR1 doped thin films based on different matrices was studied and measured at a wavelength of 532 nm. Results indicate that the TiO2/ormosils based thin film presents a better OB-gain than that of the poly (methyl methacrylate) (PMMA) based thin film due to its more rigid network structure. Moreover, it is also noted that higher titanium content is helpful for enhancing the OB-gain of the as-prepared hybrid thin films.

  17. Thermal behavior, structure formation and optical characteristics of nanostructured basic fuchsine thin films

    Energy Technology Data Exchange (ETDEWEB)

    Zeyada, H.M. [Department of Physics, Faculty of Science at New Damietta, Damietta University, 34517, New Damietta (Egypt); Makhlouf, M.M., E-mail: m_makhlof@hotmail.com [Department of Physics, Faculty of Science at New Damietta, Damietta University, 34517, New Damietta (Egypt); Department of Physics, Faculty of Applied Medical Sciences at Turabah Branch, Taif University, 21995 (Saudi Arabia); Department of Physics, Damietta Cancer Institute, Damietta (Egypt); Ismail, M.I.M.; Salama, A.A. [Department of Physics, Faculty of Science, Port Said University, Port Said (Egypt)

    2015-08-01

    Thin films of basic fuchsine, BF, are prepared by thermal evaporation technique. The data of thermal gravimetric analysis, TGA, showed that BF has a thermal stability up to the temperature of 265 °C. The structural characteristics of BF thin films are investigated by using X-ray diffraction, and atomic force microscope techniques. BF is polycrystalline in powder form; it becomes nanocrystallites in thin film condition. Annealing temperatures decreased crystallites size and influenced optical constants of BF films. Optical constants of BF films were estimated by using spectrophotometer measurements of transmittance and reflectance in the spectral range from 190 to 2500 nm. The dependence of absorption coefficient on the photon energy and annealing temperatures was determined and the analysis of the results showed that the optical transition in BF films is indirect allowed one. The onset and fundamental energy gap of BF thin films are 1.91 and 3.72 eV, respectively and they decrease by annealing temperatures. The optical dielectric constants and dispersion parameters of BF thin film are calculated and showed remarkable dependence on photon energy and annealing temperatures. - Graphical abstract: Display Omitted - Highlights: • Polycrystalline BF powder becomes nanocrystallites film upon thermal deposition. • BF has thermal stability up to 265 °C. • BF can be applied as optical filter material. • The type of electron transition is indirect allowed with E{sub g} of 1.91 eV. • Annealing temperatures influenced absorption and dispersion parameters of BF films.

  18. Influence of sputtering power on the optical properties of ITO thin films

    Energy Technology Data Exchange (ETDEWEB)

    K, Aijo John; M, Deepak, E-mail: manju.thankamoni@gmail.com; T, Manju, E-mail: manju.thankamoni@gmail.com [Department of Physics, Sree Sankara College, Kalady P. O., Ernakulam Dist., Kerala (India); Kumar, Vineetha V. [Dept. of Physics, K. E. College, Mannanam, Kottayam Dist., Kerala (India)

    2014-10-15

    Tin doped indium oxide films are widely used in transparent conducting coatings such as flat panel displays, crystal displays and in optical devices such as solar cells and organic light emitting diodes due to the high electrical resistivity and optical transparency in the visible region of solar spectrum. The deposition parameters have a commendable influence on the optical and electrical properties of the thin films. In this study, ITO thin films were prepared by RF magnetron sputtering. The properties of the films prepared under varying sputtering power were compared using UV- visible spectrophotometry. Effect of sputtering power on the energy band gap, absorption coefficient and refractive index are investigated.

  19. Optical properties of d.c. magneto sputtered tantalum and titanium nanostructure thin film metal hydrides

    Indian Academy of Sciences (India)

    M Singh; S Srivastava; S Agarwal; S Kumar; Y K Vijay

    2010-10-01

    Nanostructured thin films of tantalum and titanium were deposited on glass substrate using d.c. magnetron sputtering technique under the argon gas environment at a pressure of 0.1 mbar. Optical transmission and absorption studies were carried out for these samples with pressure of hydrogen. Large changes in both transmission and absorption on loading these films with hydrogen are accompanied by significant phase changes and electronic transformation. Optical photograph shows the colour variation after hydrogenation in case of tantalum film which may be used as decorative mirrors and hydrogen sensors. The hydrogen storage capability of thin films was confirmed by variation in optical properties.

  20. Influence of sputtering power on the optical properties of ITO thin films

    Science.gov (United States)

    K, Aijo John; Kumar, Vineetha V.; M, Deepak; T, Manju

    2014-10-01

    Tin doped indium oxide films are widely used in transparent conducting coatings such as flat panel displays, crystal displays and in optical devices such as solar cells and organic light emitting diodes due to the high electrical resistivity and optical transparency in the visible region of solar spectrum. The deposition parameters have a commendable influence on the optical and electrical properties of the thin films. In this study, ITO thin films were prepared by RF magnetron sputtering. The properties of the films prepared under varying sputtering power were compared using UV- visible spectrophotometry. Effect of sputtering power on the energy band gap, absorption coefficient and refractive index are investigated.

  1. Pulsed laser deposited Al-doped ZnO thin films for optical applications

    Directory of Open Access Journals (Sweden)

    Gurpreet Kaur

    2015-02-01

    Full Text Available Highly transparent and conducting Al-doped ZnO (Al:ZnO thin films were grown on glass substrates using pulsed laser deposition technique. The profound effect of film thickness on the structural, optical and electrical properties of Al:ZnO thin films was observed. The X-ray diffraction depicts c-axis, plane (002 oriented thin films with hexagonal wurtzite crystal structure. Al-doping in ZnO introduces a compressive stress in the films which increase with the film thickness. AFM images reveal the columnar grain formation with low surface roughness. The versatile optical properties of Al:ZnO thin films are important for applications such as transparent electromagnetic interference (EMI shielding materials and solar cells. The obtained optical band gap (3.2–3.08 eV was found to be less than pure ZnO (3.37 eV films. The lowering in the band gap in Al:ZnO thin films could be attributed to band edge bending phenomena. The photoluminescence spectra gives sharp visible emission peaks, enables Al:ZnO thin films for light emitting devices (LEDs applications. The current–voltage (I–V measurements show the ohmic behavior of the films with resistivity (ρ~10−3 Ω cm.

  2. Optical properties of hexagonal boron nitride thin films deposited by radio frequency bias magnetron sputtering

    Institute of Scientific and Technical Information of China (English)

    Deng Jin-Xiang; Zhang Xiao-Kang; Yao Qian; Wang Xu-Yang; Chen Guang-Hua; He De-Yan

    2009-01-01

    The optical properties of hexagonal boron nitride (h-BN) thin films were studied in this paper. The films were characterized by Fourier transform infrared spectroscopy,UV-visible transmittance and reflection spectra,h-BN thin films with a wide optical band gap Eg (5.86 eV for the as-deposited film and 5.97 eV for the annealed film) approaching h-BN single crystal were successfully prepared by radio frequency (RF) bias magnetron sputtering and post-deposition annealing at 970 K. The optical absorption behaviour of h-BN films accords with the typical optical absorption characteristics of amorphous materials when fitting is made by the Urbach tail model. The annealed film shows satisfactory structure stability. However,high temperature still has a significant effect on the optical absorption properties,refractive index n,and optical conductivity σ of h-BN thin films. The blue-shift of the optical absorption edge and the increase of Eg probably result from stress relaxation in the film under high temperatures. In addition,it is found that the refractive index clearly exhibits different trends in the visible and ultraviolet regions. Previous calculational results of optical conductivity of h-BN films are confirmed in our experimental results.

  3. Effect of film thickness on microstructure parameters and optical constants of CdTe thin films

    Energy Technology Data Exchange (ETDEWEB)

    Shaaban, E.R., E-mail: esam_ramadan2008@yahoo.co [Physics Department, Faculty of Science, Qassim University, Buridah 51452 (Saudi Arabia); Physics Department, Faculty of Science, Al-Azhar University, Assiut, P.O. 71452 (Egypt); Afify, N. [Physics Department, Assiut University, Assiut (Egypt); El-Taher, A. [Physics Department, Faculty of Science, Qassim University, Buridah 51452 (Saudi Arabia); Physics Department, Faculty of Science, Al-Azhar University, Assiut, P.O. 71452 (Egypt)

    2009-08-12

    Different thickness of cadmium telluride (CdTe) thin films was deposited onto glass substrates by the thermal evaporation technique. Their structural characteristics were studied by X-ray diffraction (XRD). The XRD experiments showed that the films are polycrystalline and have a zinc-blende (cubic) structure. The microstructure parameters, crystallite size and microstrain were calculated. It is observed that the crystallite size increases and microstrain decreases with the increase in the film thickness. The fundamental optical parameters like band gap and extinction coefficient are calculated in the strong absorption region of transmittance and reflectance spectrum. The possible optical transition in these films is found to be allowed direct transition with energy gap increase from 1.481 to 1.533 eV with the increase in the film thickness. It was found that the optical band gap increases with the increase in thickness. The refractive indices have been evaluated in transparent region in terms of envelope method, which has been suggested by Swanepoul in the transparent region. The refractive index can be extrapolated by Cauchy dispersion relationship over the whole spectral range, which extended from 400 to 2500 nm. It is observed that the refractive index, n increases on increasing the film thickness up to 671 nm and then the variation of n with higher thickness lie within the experimental errors.

  4. Effect of gamma radiation on optical and electrical properties of tellurium dioxide thin films

    Indian Academy of Sciences (India)

    T K Maity; S L Sharma

    2008-11-01

    Gamma radiation induced changes in the optical and electrical properties of tellurium dioxide (TeO2) thin films, prepared by thermal evaporation, have been studied in detail. The optical characterization of the as-deposited thin films and that of the thin films exposed to various levels of gamma radiation dose clearly show that the optical bandgap decreases with increase in the gamma radiation dose up to a certain dose. At gamma radiation doses above this value, however, the optical bandgap has been found to increase. On the other hand, the current vs voltage plots for the as-deposited thin films and those for the thin films exposed to various levels of gamma radiation dose show that the current increases with the gamma radiation dose up to a certain dose and that the value of this particular dose depends upon the thickness of the film. The current has, however, been found to decrease with further increase in gamma radiation dose. The observed changes in both the optical and electrical properties indicate that TeO2 thin films can be used as the real time gamma radiation dosimeter up to a certain dose, a quantity that depends upon the thickness of the film.

  5. Thin films from hydrophilic poly(N,N-dimethyl acrylamide) copolymers as optical indicators for humidity

    Science.gov (United States)

    Lazarova, K.; Todorova, L.; Christova, D.; Vasileva, M.; Georgiev, R.; Madjarova, V.; Babeva, T.

    2017-01-01

    In the present paper we study thin films from poly(N,N-dimethyl acrylamide)-poly(ethylene oxide) (PDMAA/PEO) copolymers of different composition and structure in order to implement them as sensitive media for optical indicators for humidity. PDMAA/PEO di- and triblock copolymers were synthesized via redox polymerization in aqueous media. Thin films were deposited on silicon substrates by spin coating method using polymers solutions with appropriate concentrations. Refractive index, extinction coefficient and thickness of the films are calculated from reflectance spectra of the films deposited on silicon substrates using non-linear curve fitting method. Sensing properties of the films were tested by films exposure to different humidity levels followed by in-situ monitoring of the changes in the optical properties. The influence of the polymer structure and postdeposition annealing on the optical and sensing properties of the films was investigated. The potential application of selected polymers for optical sensing of humidity were demonstrated and discussed.

  6. Optical characteristics of transparent samarium oxide thin films deposited by the radio-frequency sputtering technique

    Indian Academy of Sciences (India)

    A A ATTA; M M EL-NAHASS; KHALED M ELSABAWY; M M ABD EL-RAHEEM; A M HASSANIEN; A ALHUTHALI; ALI BADAWI; AMAR MERAZGA

    2016-11-01

    Transparent metal oxide thin films of samarium oxide (Sm$_2$O$_3$) were prepared on pre-cleaned fused optically flat quartz substrates by radio-frequency (RF) sputtering technique. The as-deposited thin films were annealed at different temperatures (873, 973 and 1073 K) for 4 h in air under normal atmospheric pressure. The topological morphology of the film surface was characterized by using atomic force microscopy (AFM). The optical properties of the as-prepared and annealed thin films were studied using their reflectance and transmittance spectra at nearly normal incident light. The estimated direct optical band gap energy (E$^{d}_{g}$ ) values were found to increase by increasing the annealing temperatures. The dispersion curves of the refractive index of Sm$_2$O$_3$ thin films were found to obey the single oscillator model.

  7. Prism coupling technique investigation of elasto-optical properties of thin polymer films

    Science.gov (United States)

    Ay, Feridun; Kocabas, Askin; Kocabas, Coskun; Aydinli, Atilla; Agan, Sedat

    2004-12-01

    The use of thin polymer films in optical planar integrated optical circuits is rapidly increasing. Much interest, therefore, has been devoted to characterizing the optical and mechanical properties of thin polymer films. This study focuses on measuring the elasto-optical properties of three different polymers; polystyrene, polymethyl-methacrylate, and benzocyclobutane. The out-of-plane elastic modulus, refractive index, film thickness, and birefringence of thin polymer films were determined by means of the prism coupling technique. The effect of the applied stress on the refractive index and birefringence of the films was investigated. Three-dimensional finite element method analysis was used so as to obtain the principal stresses for each polymer system, and combining them with the stress dependent refractive index measurements, the elasto-optic coefficients of the polymer films were determined. It was found that the applied stress in the out-of-plane direction of the thin films investigated leads to negative elasto-optic coefficients, as observed for all the three thin polymer films.

  8. Structural and optical study of nanostructure of 4-cyanopyranoquinolinedione (CPQ) thin films

    Science.gov (United States)

    Soliman, H. S.; Ibrahim, M.; El-Mansy, M. A. M.; Atef, S. M.

    2017-10-01

    Thin films of 4-cyanopyranoquinolinedione, CPQ, with different thicknesses were deposited by thermal evaporation method. The structural properties of powder and thin films were investigated using X-ray diffraction technique. The crystal structure, lattice parameters and Miller indices of the powder were indexed. The crystalline size, strain and dislocation density were determined for powder and thin films. The optical properties of CPQ thin films were studied using spectrophotometric measurements of both transmittance and reflectance in the wavelength range 200-2500 nm. HOMO-LUMO band gap was determined by cyclic voltammetry. The calculation of optical band gap using absorption coefficient showed that the film has direct allowed transition with 3.02 eV energy gap. The normal dispersion of the refractive index of the films was described by Wemple-DiDomenico single oscillator model. Some dispersion parameters were calculated. Also, the real and imaginary parts of dielectric constant, volume and surface energy loss functions were estimated.

  9. Ion Beam Assisted Deposition Of Optical Thin Films - Recent Results

    Science.gov (United States)

    McNally, J. J.; Al-Jumaily, G. A.; Wilson, S. R.; McNeil, J. R.

    1985-11-01

    We have examined the properties of dielectric (Ti02, Si02, -Al203, Ta205 and Hf02) films deposited using ion-assisted deposition (IAD). The films were characterized using an angularly resolved scatterometer, spectrophotometer and Raman spectroscopy. A reduction in optical scatter, especially that due to low spatial frequencies, is observed for films deposited with simultaneous ion bombardment. Higher values of refractive index are obtained for films deposited using IAD. Raman spectra indicate a crystalline phase change in TiO2 films is induced by bombardment of samples with 02 ions during deposition. Other experimental data and the effects of the induced phase transition on the optical properties of TiO2 will be discussed.

  10. A quantum size effect in infrared optical response of aliminum thin films

    Science.gov (United States)

    Xiao, Mufei; Villagómez, Ricardo

    1998-03-01

    We present a quantum mechanical calculation for diamagnetic optical response of metallic thin films. The study shows that in the optical response of the thin films, such as the reflectance, there exists an oscillatory dependence on the film thickness when the film contents less than about 100 monolayers, and the period of the oscillation corresponds to one or few monolayers. We show that the oscillation can be attributed to the intraband fluctuations of the valence electrons at discrete energy states as well as at continuum energy states. For comparison, we present some experimental results for Aluminum thin films of thickness 5 ~112ÅInfrared (λ=9.2μ m) optical reflectance of the films was measured, which demonstrates experimentally the predicted oscillating fine structures.

  11. Current Situation and Developing Trend of Optical Thin Films for DPSSL

    Institute of Scientific and Technical Information of China (English)

    BU Yi-kun; ZHENG Quan; MIAO Tong-qun; QIAN Long-sheng

    2005-01-01

    A series of optical thin films for LD pumped all-solid-state laser are discussed. Because of the difference between the pumped wavelength and the output wavelength, various kinds of pumping ways, resonator structures and laser crystals, there are so many new kinds of optical thin films, including novel edge filters ,high reflection and antireflection coatings. The key problems in designing and coating are analyzed, and the researches carried out worldwide in this field are also given.

  12. Thin As-Se-Sb Films as Potential Medium for Optics and Sensor Application

    Science.gov (United States)

    Ilcheva, Vania; Boev, V.; Petkova, T.; Petkov, Plamen; Petkov, Emil; Socol, G.; Mihailescu, I. N.

    Thin films have been deposited onto quartz substrates by the pulsed laser deposition (PLD) method from the corresponding glassy bulk As-Se-Sb chalcogenide materials. Photoinduced changes have been observed after illumination of the films with a Xe lamp. The transmission spectra of the thin films have been measured before and after irradiation and the optical constants have been derived by the Swanepoel method. The results suggest feasible applications of these materials for waveguide-sensors.

  13. Magneto-optic properties and optical parameter of thin MnCo films

    Directory of Open Access Journals (Sweden)

    E Attaran Kakhki

    2009-09-01

    Full Text Available Having precise hysterics loop of thin ferroelectric and ferromagnetic layers for optical switching and optical storages are important. A hysterieses loop can be achieved from a phenomenon call the magneto-optic effect. The magneto-optic effect is the rotation of a linear polarized electromagnetic wave propagated through a ferromagnetic medium. When light is transmitted through a layer of magnetic material the result is called the Faraday effects and in the reflection mode Kerr effect. In the present work we prepared a thin layer of MnxCo3-xO4 (0≤ x ≤ 1 and a binary form of MnO/Co3O4 by the spray pyrolysis method. The films have been characterized by a special set up of magneto-optic hysterics loop plotter containing a polarized He- Ne laser beam and a special electronic circuit. Faraday rotation were measured for these films by hysterics loop plotter and their optical properties were also obtained by spatial software designed for this purpose according to Swane Poel theoretical method. The measurements show that the samples at diluted Mn study has are ferromagnetic and the magneto-optic rotation show a good enhance respect to the single Co layers. Also, the study has shown that the MnCo oxide layer have two different energy gaps and by increasing of Mn this energy decreases and fall to 0.13 eV.

  14. Nonlinear optical properties of a self-organized dye thin film

    Institute of Scientific and Technical Information of China (English)

    Haifeng Kang; Yizhong Yuan; Zhenrong Sun; Zugeng Wang

    2007-01-01

    @@ A self-organized thin film of a cyanine dye is fabricated by the spin-coating technique and is characterized by ultraviolet-visible spectroscopy, infrared (IR) spectroscopy, small-angle X-ray diffraction, ellipsometer,and atomic force microscopy (AFM). The nonlinear optical properties of the thin films are investigated by degenerate four wave mixing (DFWM) technique. The cyanine dye thin film sample exhibits high optical nonlinearities (χ(3) = 2.55 × 10-12 esu), and the mechanism is analyzed by the exciton coupling theory.

  15. Optical and electrical properties of chemical bath deposited cobalt sulphide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Govindasamy, Geetha [R& D Centre, Bharathiar University, Coimbatore (India); Murugasen, Priya, E-mail: priyamurugasen15@gmail.com [Department of Physics, Saveetha Engineering, Chennai, Tamil Nadu (India); Sagadevan, Suresh [Department of Physics, AMET University, Chennai, Tamil Nadu (India)

    2017-01-15

    Cobalt sulphide (CoS) thin films were synthesized using the Chemical Bath Deposition (CBD) technique. X-ray diffraction (XRD) analysis was used to study the structure and the crystallite size of CoS thin film. Scanning Electron Microscope (SEM) studies reveal the surface morphology of these films. The optical properties of the CoS thin films were determined using UV-Visible absorption spectrum. The optical band gap of the thin films was found to be 1.6 eV. Optical constants such as the refractive index, the extinction coefficient and the electric susceptibility were determined. The dielectric studies were carried out at different frequencies and at different temperatures for the prepared CoS thin films. In addition, the plasma energy of the valence electron, Penn gap or average energy gap, the Fermi energy and electronic polarizability of the thin films were determined. The AC electrical conductivity measurement was also carried out for the thin films. The activation energy was determined by using DC electrical conductivity measurement. (author)

  16. Structural and optical properties of ZnS thin film grown by pulsed electrodeposition

    Energy Technology Data Exchange (ETDEWEB)

    Hennayaka, H.M.M.N.; Lee, Ho Seong, E-mail: hs.lee@knu.ac.kr

    2013-12-02

    ZnS thin films were grown on indium–tin-oxide coated glass substrates using pulsed electrodeposition and the effect of the deposition temperature on the structural and optical properties of the ZnS films was investigated. Polycrystalline cubic ZnS films were obtained at all the deposition temperatures. At temperatures below 70 °C, less dense films were obtained and particle agglomeration was visible. On the other hand, at temperatures above 70 °C, more dense films with well-defined grains were obtained. With increasing deposition temperatures, the optical transmittance and bandgap of the ZnS films decreased. These results are attributed to the increase in the thickness of ZnS films and their particle size. The ZnS films grown at 90 °C exhibited the highly (200) preferred orientation and n-type conductivity with a wide bandgap of 3.75 eV. - Highlights: • This study describes the effect of the deposition temperature on the growth of the ZnS thin films. • ZnS thin films were grown using pulsed electrodeposition. • ZnS thin films exhibited the good crystal quality and chemical composition. • ZnS thin films exhibited n-type conductivity with a wide bandgap of 3.75 eV.

  17. INFLUENCE OF ALUMINUM CONCENTRATION ON THE ELECTRICAL AND OPTICAL PROPERTIES OF ZnO THIN FILMS

    Directory of Open Access Journals (Sweden)

    Ebru GÜNGÖR

    2016-10-01

    Full Text Available Al:ZnO thin films having with different Al concentrations were deposited on glass substrates by a sol-gel technique. The effects of Al doping on the structural, optical and electrical properties of Al:ZnO were investigated using with XRD, optical transmittance and sheet resistance measurements. The concentration of zinc acetate was 0.1 M. Al content in the starting solution was varied from 0 to 20% as the molarity range. Optical transmittance spectra of the films in the form of Film/Glass were used to determine the film thickness and optical band gaps. The optical transmissions of Al:ZnO thin films were higher than 80% in the visible and near infrared region. The optical band gaps of Al:ZnO films decrease with increase of Al content. In order to obtain the average sheet resistance of the films the current and voltage through the probes have been measured for five different position by four-point probe method. The results showed that the sheet resistances of Al:ZnO thin films increased with the Al concentration. Considering the film thickness and geometric factor, the electrical resistivity values were computed. It was observed that the sheet resistance of AZO films up to 10% molarity of Al in the starting solution increased.

  18. Effect of substrate temperature on structural, morphological, optical and electrical properties of IGZO thin films

    Science.gov (United States)

    Jayaraman, Vinoth Kumar; Álvarez, Arturo Maldonado; Olvera Amador, María de la luz

    2017-02-01

    Indium and gallium co-doped zinc oxide (IGZO) thin films were deposited on glass substrates by ultrasonic spray pyrolysis. Physical properties such as structural, morphological, optical and electrical properties were examined on IGZO thin films with respect to the changes in the substrate temperature (425, 450 and 475 °C). Structural results showed that IGZO films were crystalline and presented hexagonal wurtzite structure. Morphological studies proved that the substrate temperature changed the sizes of hexagonal nanostructures of IGZO. Optical transmittance in the UV-vis region and electrical measurements confirmed that IGZO films were transparent (>70%) with a minimum electrical resistivity 10.5×10-3 Ω cm.

  19. Optical characterization of antimony-based bismuth-doped thin films with different annealing temperatures

    Institute of Scientific and Technical Information of China (English)

    Xinmiao Lu; Yiqun Wu; Yang Wang; Jinsong Wei

    2011-01-01

    Antimony-b ased bismuth-doped thin film,a new kind of super-resolution mask layer,is prepared by magnetron sputtering.The structures and optical constants of the thin films before and after annealing are examined in detail.The as-deposited film is mainly in an amorphous state.After annealing at 170-370℃,it is converted to the rhombohedral-type of structure.The extent of crystallization increased with the annealing temperature.When the thin film is annealed,its refractive index decreased in the most visible region,whereas the extinction coefficient and reflectivity are markedly increased.The results indicate that the optical parameters of the film strongly depend on its microstructure and the bonding of the atoms.As demand for ultrahigh-density information storage continues to grow the recording mark size in optical memory is reduced to the nanometer scale [1- 4].Exceeding the optical diffraction limit with traditional optical storage technology has become a challenge[5-6].%Antimony-based bismuth-doped thin film, a new kind of super-resolution mask layer, is prepared by magnetron sputtering. The structures and optical constants of the thin films before and after annealing are examined in detail. The as-deposited film is mainly in an amorphous state. After annealing at 170-370℃, it is converted to the rhombohedral-type of structure. The extent of crystallization increased with the annealing temperature. When the thin film is annealed, its refractive index decreased in the most visible region, whereas the extinction coefficient and reflectivity are markedly increased. The results indicate that the optical parameters of the film strongly depend on its microstructure and the bonding of the atoms.

  20. Thin film technologies for optoelectronic components in fiber optic communication

    Science.gov (United States)

    Perinati, Agostino

    1998-02-01

    will grow at an annual average rate of 22 percent from 1.3 million fiber-km in 1995 to 3.5 million fiber-km in 2000. The worldwide components market-cable, transceivers and connectors - 6.1 billion in 1994, is forecasted to grow and show a 19 percent combined annual growth rate through the year 2000 when is predicted to reach 17.38 billion. Fiber-in-the-loop and widespread use of switched digital services will dominate this scenario being the fiber the best medium for transmitting multimedia services. As long as communication will partially replace transportation, multimedia services will push forward technology for systems and related components not only for higher performances but for lower cost too in order to get the consumers wanting to buy the new services. In the long distance transmission area (trunk network) higher integration of electronic and optoelectronic functions are required for transmitter and receiver in order to allow for higher system speed, moving from 2.5 Gb/s to 5, 10, 40 Gb/s; narrow band wavelength division multiplexing (WDM) filters are required for higher transmission capacity through multiwavelength technique and for optical amplifier. In the access area (distribution network) passive components as splitters, couplers, filters are needed together with optical amplifiers and transceivers for point-to-multipoint optical signal distribution: main issue in this area is the total cost to be paid by the customer for basic and new services. Multimedia services evolution, through fiber to the home and to the desktop approach, will be mainly affected by the availability of technologies suitable for component consistent integration, high yield manufacturing processes and final low cost. In this paper some of the optoelectronic components and related thin film technologies expected to mainly affect the fiber optic transmission evolution, either for long distance telecommunication systems or for subscriber network, are presented.

  1. Influence of Electron Irradiation on Optical Properties of ZnSe Thin Films

    Directory of Open Access Journals (Sweden)

    P. Raghu

    2014-11-01

    Full Text Available Zinc Selenide (ZnSe thin films of 500 nm thickness were deposited by electron beam evaporation technique and irradiated with 8 MeV electron beam for the doses ranging from 0 Gy to 1 kGy. Optical properties were studied for both irradiated and pristine samples using Ultraviolet-Visible spectrophotometer. The increase in electron dose tends to decrease in transmittance and increase in refractive index of thin film. Irradiated thin film exhibits minimum of 67 % transmittance for 800 Gy with very high absorption of optical energy at 550 nm wavelength. The samples irradiated > 800 Gy tends to redeem the pristine properties. Optical band gap for irradiated thin film were direct and in the range of 2.66 – 2.69 eV.

  2. A Study of Optical Parameters of Tin Sulphide Thin Films Using the Swanepoel Method

    Science.gov (United States)

    Ragina, A. J.; Murali, K. V.; Preetha, K. C.; Deepa, K.; Remadevi, T. L.

    2011-10-01

    The knowledge of the optical parameters of thin films is important for optics and optoelectronics. In the present work, tin sulphide thin films were deposited on glass substrates by chemical bath deposition method. The as grown films were brown in color and highly adherent to the substrate. The films were characterized by X-ray diffraction (XRD), scanning electron microscopy and spectrophotometric measurements. XRD patterns showed that the films developed were orthorhombic structure. SEM images of tin sulphide thin films confirmed the formation of nanowires. Absorption spectra revealed medium absorption in the visible region and a gradual decrease with higher wavelength. The transmittance of the as-synthesized films is about 50% in the wavelength range 600-1000 nm. The methodological framework of the Swanepoel's method for the spectrophotometric determination of optical parameters of tin sulphide thin films using transmittance data was discussed. The Swanepoel's method is found to be applicable for thin films when measured transmittance spectra have at least one minimum and one maximum. By analyzing the transmission curve, the refractive index and the thickness of the film were evaluated. The energy band gaps are also reported. The optical band gap is direct with a value of 1.79 eV. The values of the optical band gap energy and thickness of the film calculated by Swanepoel's method were compared with that obtained from absorption spectra and cross sectional SEM photographs respectively. These properties demonstrated that tin sulphide thin films could be used as an absorber layer in the fabrication of heterojunction solar cells.

  3. Engineering of the band gap and optical properties of thin films of yttrium hydride

    Energy Technology Data Exchange (ETDEWEB)

    You, Chang Chuan; Mongstad, Trygve; Maehlen, Jan Petter; Karazhanov, Smagul, E-mail: smagulk@ife.no [Institute for Energy Technology, P.O. Box 40, NO-2027 Kjeller (Norway)

    2014-07-21

    Thin films of oxygen-containing yttrium hydride show photochromic effect at room temperature. In this work, we have studied structural and optical properties of the films deposited at different deposition pressures, discovering the possibility of engineering the optical band gap by variation of the oxygen content. In sum, the transparency of the films and the wavelength range of photons triggering the photochromic effect can be controlled by variation of the deposition pressure.

  4. Structural and Optical Study of Chemical Bath Deposited Nano-Structured CdS Thin Films

    Science.gov (United States)

    Kumar, Suresh; Sharma, Dheeraj; Sharma, Pankaj; Sharma, Vineet; Barman, P. B.; Katyal, S. C.

    2011-12-01

    CdS is commonly used as window layer in polycrystalline solar cells. The paper presents a structural and optical study of CdS nano-structured thin films. High quality CdS thin films are grown on commercial glass by means of chemical bath deposition. It involves an alkaline solution of cadmium salt, a complexant, a chalcogen source and a non-ionic surfactant. The films have been prepared under various process parameters. The chemically deposited films are annealed to estimate its effect on the structural and optical properties of films. These films (as -deposited and annealed) have been characterized by means of XRD, SEM and UV-Visible spectrophotometer. XRD of films show the nano-crystalline nature. The energy gap of films is found to be of direct in nature.

  5. Elasto-Optical Properties of Thin Polymer Films by Prism Coupling Technique

    Science.gov (United States)

    Ay, Feridun; Agan, Sedat; Kocabas, Askin; Aydinli, Atilla

    2004-05-01

    Reliable measurement of stress dependent refractive index of thin polymer films has been achieved. The effect of the applied stress on the refractive index and birefringence of the films was investigated. The out-of-plane elastic moduli of the thin polymer films were deduced by using the same prism coupling setup. Three dimensional finite element method (FEM) analysis was used to obtain the principal stresses for each polymer film and combining them with the stress dependent refractive index measurements, the elasto-optic coefficients of the polymer films were determined, for the first time.

  6. Optical Properties of Magnetron sputtered Nickel Thin Films

    Science.gov (United States)

    Twagirayezu, Fidele; Geerts, Wilhelmus J.; Cui, Yubo

    2015-03-01

    The study of optical properties of Nickel (Ni) is important, given the pivotal role it plays in the semiconductor and nano-electronics technology. Ni films were made by DC and RF magnetron sputtering in an ATC Orion sputtering system of AJA on various substrates. The optical properties were studied ex situ by variable angle spectroscopic (220-1000 nm) ellipsometry at room temperature. The data were modeled and analyzed using the Woollam CompleteEase Software fitting ellipsometric and transmission data. Films sputtered at low pressure have optical properties similar to that of Palik. Films sputtered at higher pressure however have a lower refraction index and extinction coefficient. It is expected from our results that the density of the sputtered films can be determined from the ellipsometric quantities. Our experiments also revealed that Ni is susceptible to a slow oxidation changing its optical properties over the course of several weeks. The optical properties of the native oxide differ from those of reactive sputtered NiO similar as found by. Furthermore the oxidation process of our samples is characterized by at least two different time constants.

  7. Structure and composition effects on electrical and optical properties of sputtered PbSe thin films

    Energy Technology Data Exchange (ETDEWEB)

    Sun, Xigui; Gao, Kewei [Department of Materials Physics and Chemistry, University of Science and Technology Beijing, Beijing 100083 (China); Pang, Xiaolu, E-mail: pangxl@mater.ustb.edu.cn [Department of Materials Physics and Chemistry, University of Science and Technology Beijing, Beijing 100083 (China); Yang, Huisheng [Department of Materials Physics and Chemistry, University of Science and Technology Beijing, Beijing 100083 (China); Volinsky, Alex A. [Department of Mechanical Engineering, University of South Florida, Tampa, FL 33620 (United States)

    2015-10-01

    Lead selenide (PbSe) thin films were grown on Si (111) substrates using magnetron sputtering, and the structure and composition effects on the photoelectric and optical properties of the sputtered PbSe thin films were studied using field emission scanning electron microscope, energy dispersive X-ray detector, X-ray diffraction, X-ray photoelectron spectroscopy, physical property measurement system and Fourier transform infrared spectroscopy. The optical band gaps of all the sputtered PbSe thin films ranged from 0.264 eV to 0.278 eV. The PbSe thin film prepared with oxygen flux 1.0 sccm, deposition time 240 min, sputtering power 150 W and substrate temperature 150 °C showed the highest resistance change rate under illumination, about 84.47%. The variation trends of the photoelectric and optical properties with the average crystal size, lattice constant, oxygen content and lattice oxygen percentage were similar, respectively. The sputtered PbSe thin films showed poor photoelectric sensitivity, when the average crystal size was similar to the Bohr radius (46 nm), while the photoelectric sensitivity increased almost linearly with the oxygen content in the thin films, indicating that both deviating the average crystal size from the Bohr radius and increasing the oxygen content are two direct and effective ways to obtain high photoelectric sensitivity in PbSe thin films. - Highlights: • Lead selenide thin films were grown on Si (111) using magnetron sputtering. • Lead selenide thin films show superior photoelectric sensitivity. • The effects of structure and composition to the film properties were studied. • The photoelectric property was mainly affected by grain size and oxygen content.

  8. Optical band gap tuning of Sb-Se thin films for xerographic based applications

    Science.gov (United States)

    Kaur, Ramandeep; Singh, Palwinder; Singh, Kulwinder; Kumar, Akshay; Thakur, Anup

    2016-10-01

    In the present paper we have studied the effect of Sb addition on the optical band gap tuning of thermally evaporated SbxSe100-x (x = 0, 5, 20, 50 and 60) thin films. The structural investigations revealed that all thin films were amorphous in nature. Transmission spectrum was taken in the range 400-2500 nm shows that all films are highly transparent in the near infrared region. The fundamental absorption edge shifts towards longer wavelength with Sb incorporation. The optical band gap decreases with addition of antimony in a-Se thin films. A good correlation has been drawn between experimentally estimated and theoretically calculated optical band gap. The decrease in optical band gap of thin films has been explained using chemical bond approach and density of states model. Decrease in optical band gap with Sb addition increases the concentration of electron deep traps which increases the X-ray sensitivity of Sb-Se thin films. Thus by tuning the optical band gap of Sb-Se alloy, it could be utilized for xerographic based applications.

  9. Effects of Al Concentration on Structural and Optical Properties of Al-doped ZnO Thin Films

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Min Su; Yim, Kwang Gug; Leem, Jae Young [Inje University, Gimhae (Korea, Republic of); Son, Jeong Sik [Kyungwoon University, Gumi (Korea, Republic of)

    2012-04-15

    Aluminium (Al)-doped zinc oxide (AZO) thin films with different Al concentrations were prepared by the solgel spin-coating method. Optical parameters such as the optical band gap, absorption coefficient, refractive index, dispersion parameter, and optical conductivity were studied in order to investigate the effects of the Al concentration on the optical properties of AZO thin films. The dispersion energy, single-oscillator energy, average oscillator wavelength, average oscillator strength, and refractive index at infinite wavelength of the AZO thin films were found to be affected by Al incorporation. The optical conductivity of the AZO thin films also increases with increasing photon energy

  10. The use of a genetic algorithm in optical thin film design and optimisation

    Directory of Open Access Journals (Sweden)

    Efrem K. Ejigu

    2010-07-01

    Full Text Available We used a genetic algorithm in the design and optimisation of optical thin films and present the effects of the choice of variables, refractive index and optical thickness, in both applications of this algorithm, in this paper. The Fourier transform optical thin film design method was used to create a starting population, which was later optimised by the genetic algorithm. In the genetic algorithm design application, the effect of the choice of variable was not distinct, as it depended on the type of design specification. In the genetic algorithm optimisation application, the choice of refractive index as a variable showed a better performance than that of optical thickness. The results of this study indicate that a genetic algorithm is more effective in the design application than in the optimisation application of optical thin film synthesis.

  11. Thermal annealing induced structural and optical properties of Se72Te25In3 thin films

    Science.gov (United States)

    Pathak, H. P.; Shukla, Nitesh; Kumar, Vipin; Dwivedi, D. K.

    2016-05-01

    Thin films of a- Se72Te25In3 were prepared by vacuum evaporation technique in a base pressure of 10-6 Torr on to well cleaned glass substrate. a-Se72Te25In3 thin films were annealed at different temperatures below their crystallization temperatures for 2h. The structural analysis of the films has been investigated using X-ray diffraction technique. The optical absorption spectra of these films were measured in the wavelength range 400-1100 nm in order to derive the absorption coefficient of these films. The optical band gap of as prepared and annealed films as a function of photon energy has been studied. It has been found that the optical band gap decreases with increasing annealing temperatures in the present system.

  12. Laser Induced Nonlinear Optical Properties of Zinc Oxide Thin Film Prepared by Sol-Gel Method

    Directory of Open Access Journals (Sweden)

    Vinay Kumari

    2011-01-01

    Full Text Available Optical nonlinearities of spin coated ZnO thin film have been investigated by using single beam Z-Scan technique in the visible region. X- ray diffraction shows that all films are oriented along the c-axis direction of the hexagonal crystal structure. The average optical transmittance of all films is higher than 80 %. The nonlinear optical parameters viz. nonlinear absorption coefficient (β, nonlinear index of refraction (η2, nonlinear susceptibility (χ3, have been estimated using nanosecond laser pulses of second harmonic of Nd:YAG Laser. The value of nonlinear absorption coefficient β is estimated to be greater than the already reported value. The films clearly exhibit a-ve value of nonlinear refraction at 532 nm which is attributed to the two photon absorption and free carrier absorption. The presence of RSA in ZnO thin films inferes that ZnO is a potential material for the development of optical limiter.

  13. Optical patterning of photosensitive thin film silica mesophases

    Energy Technology Data Exchange (ETDEWEB)

    DOSHI,DHAVAL A.; HUESING,NICOLA K.; LU,MENGCHENG; FAN,HONGYOU; HURD,ALAN J.; BRINKER,C. JEFFREY

    2000-02-09

    Photosensitive films incorporating molecular photoacid generators compartmentalized within a silica-surfactant mesophase were prepared by an evaporation-induced self-assembly process. UV-exposure promoted localized acid-catalyzed siloxane condensation, enabling selective etching of unexposed regions, thereby serving as a resistless technique to prepare patterned mesoporous silica. The authors also demonstrated an optically-defined mesophase transformation (hexagonal {r_arrow} tetragonal) and patterning of refractive index and wetting behavior. Spatial control of structure and function on the macro- and mesoscales is of interest for sensor arrays, nano-reactors, photonic and fluidic devices, and low dielectric constant films. More importantly, it extends the capabilities of conventional lithography from spatially defining the presence or absence of film to spatial control of film structure and function.

  14. Optical and structural properties of PbI2 thin film produced via chemical dipping method

    Science.gov (United States)

    Kariper, İ. A.

    2016-06-01

    PbI2 thin films were deposited on glass substrates via chemical bath deposition. The characteristics of PbI2 thin films were examined through their structural and optical properties. X-ray diffraction spectra showed the presence of rhombohedral structure and atom planes were subject to change with the pH of the bath. Scanning electron microscope indicated uniform distribution of grains. Optical properties were examined via UV-VIS; optical spectrum of the thin films was measured at the range of 200-1100 nm wavelength. Optimum pH levels for producing thin films were found to be pH 4-5. It has been observed that transmission and optical band gap ( E g) increased with the pH of the bath, which varied between 66-95 and 2.24-2.50 %, respectively; on the other hand film thickness of PbI2 thin films was decreased with the pH of the bath. Energy-dispersive X-ray spectroscopy analysis were in accordance with theoretical value of PbI2 at pH = 4 and 5. Refractive index was negatively correlated with pH of the chemical bath; it has been calculated as 1.97, 1.40, 1.29 and 1.24 for the films produced at pH 2, 3, 4 and 5. The results of the study were compared with similar studies in the literature.

  15. Determination of optical constants and nonlinear optical coefficients of Violet 1-doped polyvinyl alcohol thin film

    Indian Academy of Sciences (India)

    Hussain A Badran; Alaa Y Al-Ahmad; Qusay M Ali Hassan; Chassib A Emshary

    2016-01-01

    The optical properties of Violet 1-doped polyvinyl alcohol (PVA) have been investigated using Wemble and Didomenico (WD) method. The optical constants such as refractive index , the dispersion energy , the oscillation energy 0, the lattice dielectric constant ∞, light frequency dielectric constant 0 and the ratio of carrier concentration to the effective mass /* have been determined using reflection spectra in the wavelength range 300–900 nm. The singlebeam Z-scan technique was used to determine the nonlinear optical properties of Violet 1:polyvinylalcohol (PVA) thin film. The experiments were performed using continuous wave (cw) laser with a wavelength of 635 nm. The calculated nonlinear refractive index of the film, $n_{2} = -2.79 \\times 10^{-7}$ cm2/Wand nonlinear absorption coefficient, $\\beta = 6.31\\times10^{−3}$ cm/W. Optical limiting characteristics of the dye-doped polymer film was studied. The result reveals that Violet 1 can be a promising material for optical limiting applications.

  16. Ellipsometric Characterization of Thin Films from Multicomponent Chalcogenide Glasses for Application in Modern Optical Devices

    Directory of Open Access Journals (Sweden)

    R. Todorov

    2013-01-01

    Full Text Available A review is given on the application of the reflectance ellipsometry for optical characterization of bulk materials and thin films with thickness between λ/20 and 2λ (at λ=632.8 nm. The knowledge of the optical constants (refractive index, n, and extinction coefficient, k of thin films is of a great importance from the point of view of modelling and controlling the manufacture of various optical elements, such as waveguides, diffraction gratings, and microlenses. The presented results concern the optical properties of thin films from multicomponent chalcogenide glasses on the base of As2S3 and GeS2 determined by multiple-angle-of-incidence ellipsometry and regarded as a function of the composition and thickness. The homogeneity of the films is verified by applying single-angle calculations at different angles. Due to decomposition of the bulk glass during thermal evaporation, an optical inhomogeneity of the thin As (Ge-S-Bi(Tl films is observed. The profile of n in depth of thin As-S-Tl (Bi films was investigated by evaporation of discrete layers. It is demonstrated that homogenous layers from the previous compounds with controlled composition can be deposited by coevaporation of As2S3 and metals or their compounds (Bi, Tl, In2S3.

  17. Microscopic thin film optical anisotropy imaging at the solid-liquid interface

    Science.gov (United States)

    Miranda, Adelaide; De Beule, Pieter A. A.

    2016-04-01

    Optical anisotropy of thin films has been widely investigated through ellipsometry, whereby typically an optical signal is averaged over a ˜1 cm2 elliptical area that extends with increasing angle-of-incidence (AOI). Here, we report on spectroscopic imaging ellipsometry at the solid-liquid interface applied to a supported lipid bilayer (SLB). We detail how a differential spectrally resolved ellipsometry measurement, between samples with and without optically anisotropic thin film on an absorbing substrate, can be applied to recover in and out of plane refractive indices of the thin film with known film thickness, hence determining the thin film optical anisotropy. We also present how optimal wavelength and AOI settings can be determined ensuring low parameter cross correlation between the refractive indices to be determined from a differential measurement in Δ ellipsometry angle. Furthermore, we detail a Monte Carlo type analysis that allows one to determine the minimal required optical ellipsometry resolution to recover a given thin film anisotropy. We conclude by presenting a new setup for a spectroscopic imaging ellipsometry based on fiber supercontinuum laser technology, multi-wavelength diode system, and an improved liquid cell design, delivering a 5 ×-10 × ellipsometric noise reduction over state-of-the-art. We attribute this improvement to increased ellipsometer illumination power and a reduced light path in liquid through the use of a water dipping objective.

  18. Thickness and microstructure effects in the optical and electrical properties of silver thin films

    Energy Technology Data Exchange (ETDEWEB)

    Ding, Guowen, E-mail: gding@intermolecular.com; Clavero, César; Schweigert, Daniel; Le, Minh [Intermolecular, Inc., 3011 North First Street, San Jose, CA 95134 (United States)

    2015-11-15

    The optical and electrical response of metal thin films approaching thicknesses in the range of the electron mean free path is highly affected by electronic scattering with the interfaces and defects. Here, we present a theoretical and experimental study on how thickness and microstructure affect the properties of Ag thin films. We are able to successfully model the electrical resistivity and IR optical response using a thickness dependent electronic scattering time. Remarkably, the product of electronic scattering time and resistivity remains constant regardless of the thickness (τx ρ = C), with a value of 59 ± 2 μΩ cm ⋅ fs for Ag films in the investigated range from 3 to 74 nm. Our findings enable us to develop a theoretically framework that allows calculating the optical response of metal thin films in the IR by using their measured thickness and resistivity. An excellent agreement is found between experimental measurements and predicted values. This study also shows the theoretical lower limit for emissivity in Ag thin films according to their microstructure and thickness. Application of the model presented here will allow rapid characterization of the IR optical response of metal thin films, with important application in a broad spectrum of fundamental and industrial applications, including optical coatings, low-emissivity windows and semiconductor industry.

  19. Thickness and microstructure effects in the optical and electrical properties of silver thin films

    Directory of Open Access Journals (Sweden)

    Guowen Ding

    2015-11-01

    Full Text Available The optical and electrical response of metal thin films approaching thicknesses in the range of the electron mean free path is highly affected by electronic scattering with the interfaces and defects. Here, we present a theoretical and experimental study on how thickness and microstructure affect the properties of Ag thin films. We are able to successfully model the electrical resistivity and IR optical response using a thickness dependent electronic scattering time. Remarkably, the product of electronic scattering time and resistivity remains constant regardless of the thickness (τx ρ = C, with a value of 59 ± 2 μΩ cm ⋅ fs for Ag films in the investigated range from 3 to 74 nm. Our findings enable us to develop a theoretically framework that allows calculating the optical response of metal thin films in the IR by using their measured thickness and resistivity. An excellent agreement is found between experimental measurements and predicted values. This study also shows the theoretical lower limit for emissivity in Ag thin films according to their microstructure and thickness. Application of the model presented here will allow rapid characterization of the IR optical response of metal thin films, with important application in a broad spectrum of fundamental and industrial applications, including optical coatings, low-emissivity windows and semiconductor industry.

  20. Optical properties and structures of silver thin films deposited by magnetron sputtering with different thicknesses

    Institute of Scientific and Technical Information of China (English)

    Xilian Sun; Ruijin Hong; Haihong Hou; Zhengxiu Fan; Jianda Shao

    2006-01-01

    A series of thin Ag films with different thicknesses grown under identical conditions are analyzed by means of spectrophotometer. From these measurements the values of refractive index and extinction coefficient are calculated. The films are deposited onto BK7 glass substrates by direct current (DC) magnetron sputtering. It is found that the optical properties of the Ag films can be affected by films thickness.Below critical thickness of 17 nm, which is the thickness at which Ag films form continuous films, the optical properties and constants vary significantly with thickness increasing and then tend to a stable value up to about 40 nm. At the same time, X-ray diffraction measurement is carried out to examine the microstructure evolution of Ag films as a function of films thickness. The relation between optical properties and microstructure is discussed.

  1. Participation of the Third Order Optical Nonlinearities in Nanostructured Silver Doped Zinc Oxide Thin Solid Films

    Directory of Open Access Journals (Sweden)

    C. Torres-Torres

    2012-01-01

    Full Text Available We report the transmittance modulation of optical signals in a nanocomposite integrated by two different silver doped zinc oxide thin solid films. An ultrasonic spray pyrolysis approach was employed for the preparation of the samples. Measurements of the third-order nonlinear optical response at a nonresonant 532 nm wavelength of excitation were performed using a vectorial two-wave mixing. It seems that the separated contribution of the optical nonlinearity associated with each film noticeable differs in the resulting nonlinear effects with respect to the additive response exhibited by the bilayer system. An enhancement of the optical Kerr nonlinearity is predicted for prime number arrays of the studied nanoclusters in a two-wave interaction. We consider that the nanostructured morphology of the thin solid films originates a strong modification of the third-order optical phenomena exhibited by multilayer films based on zinc oxide.

  2. Optical characterization of ZnO thin films deposited by RF magnetron sputtering method

    Institute of Scientific and Technical Information of China (English)

    TANG Ning; WANG JinLiang; XU HengXing; PENG HongYong; FAN Chao

    2009-01-01

    This study investigated the process parameter effects on the structural and optical properties of ZnO thin film using radio frequency(RF)magnetron sputtering on amorphous glass substrates.The process parameters included RF power and working pressure.Results show that RF power was increased to promote the crystalline quality and decrease ZnO thin film defects.However,when the working pressure was increased to 3 Pa the ZnO thin film crystalline quality became worse.At a 200 W RF power and 1 Pa working pressure,the ZnO thin film with an optical band gap energy of 3.225 eV was obtained.

  3. Influence of Electron Irradiation on Optical Properties of ZnSe Thin Films

    OpenAIRE

    P. Raghu; C.S. Naveen; K. Mrudula; Sanjeev Ganesh; J. Shailaja; H.M. Mahesh

    2014-01-01

    Zinc Selenide (ZnSe) thin films of 500 nm thickness were deposited by electron beam evaporation technique and irradiated with 8 MeV electron beam for the doses ranging from 0 Gy to 1 kGy. Optical properties were studied for both irradiated and pristine samples using Ultraviolet-Visible spectrophotometer. The increase in electron dose tends to decrease in transmittance and increase in refractive index of thin film. Irradiated thin film exhibits minimum of 67 % transmittance for 800 Gy with ver...

  4. Structural, optical, and electrical properties of MgyTi1-yHx thin films

    NARCIS (Netherlands)

    Borsa, D. M.; Gremaud, R.; Baldi, A.; Schreuders, H.; Rector, J. H.; Kooi, B.; Notten, P. H. L.; Dam, B.; Griessen, R.

    The structural, optical, and electrical transformations induced by hydrogen absorption and/or desorption in Mg-Ti thin films prepared by co-sputtering of Mg and Ti are investigated. Highly reflective in the metallic state, the films become highly absorbing upon H absorption. The

  5. Structural, optical, and electrical properties of MgyTi1-yHx thin films

    NARCIS (Netherlands)

    Borsa, D. M.; Gremaud, R.; Baldi, A.; Schreuders, H.; Rector, J. H.; Kooi, B.; Notten, P. H. L.; Dam, B.; Griessen, R.

    2007-01-01

    The structural, optical, and electrical transformations induced by hydrogen absorption and/or desorption in Mg-Ti thin films prepared by co-sputtering of Mg and Ti are investigated. Highly reflective in the metallic state, the films become highly absorbing upon H absorption. The reflector-to-absorbe

  6. Structure and Optical Properties of Nanocrystalline Hafnium Oxide Thin Films (PostPrint)

    Science.gov (United States)

    2014-09-01

    AFRL-RX-WP-JA-2014-0214 STRUCTURE AND OPTICAL PROPERTIES OF NANOCRYSTALLINE HAFNIUM OXIDE THIN FILMS (POSTPRINT) Neil R. Murphy AFRL...OPTICAL PROPERTIES OF NANOCRYSTALLINE HAFNIUM OXIDE THIN FILMS (POSTPRINT) 5a. CONTRACT NUMBER In-House 5b. GRANT NUMBER 5c. PROGRAM ELEMENT...publication is available at http://dx.doi.org/10.1016/j.optmat.2014.08.005 14. ABSTRACT Hafnium oxide (HfO2) films were grown by sputter-deposition by

  7. Studies on chemical bath deposited zinc sulphide thin films with special optical properties

    Energy Technology Data Exchange (ETDEWEB)

    Ladar, Maria [Faculty of Chemistry and Chemical Engineering, ' Babes-Bolyai' University, 400028 Cluj-Napoca (Romania); ' Raluca Ripan' Institute for Research in Chemistry, 30 Fantanele, 400294 Cluj-Napoca (Romania); Popovici, Elisabeth-Jeanne [' Raluca Ripan' Institute for Research in Chemistry, 30 Fantanele, 400294 Cluj-Napoca (Romania)]. E-mail: jennypopovici@yahoo.com; Baldea, Ioan [Faculty of Chemistry and Chemical Engineering, ' Babes-Bolyai' University, 400028 Cluj-Napoca (Romania); Grecu, Rodica [' Raluca Ripan' Institute for Research in Chemistry, 30 Fantanele, 400294 Cluj-Napoca (Romania); Indrea, Emil [National Institute for R and D of Isotopic and Molecular Technology, Donath 71-103, 400293 Cluj-Napoca (Romania)

    2007-05-31

    Adherent and uniform zinc sulphide thin films were deposited on optical glass platelets from chemical bath containing thiourea, zinc acetate, ammonia and sodium citrate. The samples, as they were prepared were investigated by UV-vis absorption/reflection spectroscopy, fluorescence spectroscopy and X-ray diffraction. The effects of growth conditions such as reagent concentration and deposition technique (mono- and multi-layer) on optical and structural properties of the ZnS thin films have been studied. The ability of ZnS films to exhibit luminescent properties has also been investigated.

  8. The Effect of Deposition Rate on Electrical, Optical and Structural Properties of ITO Thin Films

    Directory of Open Access Journals (Sweden)

    P. S. Raghupathi

    2005-01-01

    Full Text Available Indium tin oxide (ITO thin films have been prepared using the reactive evaporation technique on glass substrates in an oxygen atmosphere. It is found that the deposition rate plays prominent role in controlling the electrical and optical properties of the ITO thin films. Resistivity, electrical conductivity, activation energy, optical transmission and band gap energy were investigated. A transmittance value of more than 90% in the visible region of the spectrum and an electrical conductivity of 3x10–6 Ωm has been obtained with a deposition rate of 2 nm/min. XRD studies showed that the films are polycrystalline.

  9. Correlation between composition, morphology and optical properties of PVK: n-ZnO:CTAB thin films

    Science.gov (United States)

    Azizi, Samir; Belhaj, Marwa; Zargouni, Sarra; Dridi, Cherif

    2017-07-01

    In this study, we report on the effect of zinc oxide nanoparticles ( n-ZnO) content and surfactant addition on the performance of poly ( N-vinylcarbazole) (PVK): n-ZnO nanocomposite thin films. Morphological and optical properties of ZnO, PVK and PVK: n-ZnO:cetyltrimethyl ammonium bromide (CTAB) hybrid films were investigated by atomic force microscopy (AFM), UV-Visible spectrophotometry and photoluminescence (PL) spectroscopy. We noticed that surface morphology was very dependent on surfactant addition into inorganic and organic components and on the ZnO content in the mixture. The optical absorption spectra of PVK: n-ZnO thin films showed a red shift of the optical band gap energy. Besides, PL measurements demonstrated an interfacial charge transfer between PVK matrix and ZnO nanoparticles through the reduced PL intensity of nanocomposites compared to PVK thin films.

  10. Optical Rectification in Isotropic Thin Film Composed of Chiral Molecules with a Tripod-Like Structure

    Institute of Scientific and Technical Information of China (English)

    WANG Xiao-Ou; GONG Li-Jing; LI Chun-Fei

    2008-01-01

    @@ Optical rectification (OR) effect in the isotropic thin film consisting of chiral molecules with a tripod-like structure is investigated.The expressions of static-electric polarization in the isotropic chiral thin films and the relations between the OR and microscopic parameters of chiral medium are obtaineel by theoretical derivation,Furthermore,the relations of static electric polarization with the wavelength of incident light and parameters of chiral molecules are simulated numerically.

  11. Glow discharge optical emission spectroscopy: a complementary technique to analyze thin electrodeposited polyaniline films

    Energy Technology Data Exchange (ETDEWEB)

    Moutarlier, V. [Institut UTINAM, CNRS-UMR 6213, Université de Franche-Comté, 16 route de Gray, 25030 Besançon (France); Lakard, S., E-mail: sophie.lakard@univ-fcomte.fr [Institut UTINAM, CNRS-UMR 6213, Université de Franche-Comté, 16 route de Gray, 25030 Besançon (France); Patois, T. [Institute of Condensed Matter and Nanosciences, Université Catholique de Louvain, Croix du Sud, 1/4, 1348 Louvain-la-Neuve (Belgium); Lakard, B. [Institut UTINAM, CNRS-UMR 6213, Université de Franche-Comté, 16 route de Gray, 25030 Besançon (France)

    2014-01-01

    Glow Discharge Optical Emission Spectroscopy (GDOES) has been developed to perform depth profiles of thick metallic films, in tens of microns range. GDOES spectroscopy can also be used to analyze thin organic polymer films since this technique has a great potential thanks to its high depth resolution, multi-element capability, sensitivity, and adaptability to solids or films and to conducting or non-conducting samples. In particular thin electrodeposited conducting polymer films remain an unexplored field of investigation for GDOES technique. However GDOES was used in this work to analyze electrodeposited polyaniline films, in addition to other techniques such as profilometry, electron microscopy and X-ray diffraction (XRD). More precisely polyaniline thin films were electrodeposited from HCl solutions and the presence of an anilinium chloride excess at the top surface of the polymer film was demonstrated using GDOES and XRD. Rinsing of these films with water led to the removal of this excess and to the partial dedoping of the polymer film due to the porous structure of polymer films. Polyaniline thin films were also electrodeposited from H{sub 2}SO{sub 4} solutions and an anilinium hydrogen sulfate was similarly observed at the top surface of the polymer. This excess was removed by rinsing, contrary to hydrogen sulfate anions incorporated into the polymer film during the electrochemical polymerization that were not completely expulsed from the polyaniline films as proved using GDOES. - Highlights: • Polyaniline films were electrodeposited from HCl and H{sub 2}SO{sub 4} solutions • Polymer films were analyzed by Glow Discharge Optical Emission Spectroscopy (GDOES) • The incorporation of anions in the films was proved using GDOES depth profiles • The crystalline structure of polyaniline films was modified by water rinsing.

  12. Preparation of silica thin films by novel wet process and study of their optical properties.

    Science.gov (United States)

    Im, Sang-Hyeok; Kim, Nam-Jin; Kim, Dong-Hwan; Hwang, Cha-Won; Yoon, Duck-Ki; Ryu, Bong-Ki

    2012-02-01

    Silicon dioxide (SiO2) thin films have gained considerable attention because of their various industrial applications. For example, SiO2 thin films are used in superhydrophilic self-cleaning surface glass, UV protection films, anti-reflection coatings, and insulating materials. Recently, many processes such as vacuum evaporation, sputtering, chemical vapor deposition, and spin coating have been widely applied to prepare thin films of functionally graded materials. However, these processes suffer from several engineering problems. For example, a special apparatus is required for the deposition of films, and conventional wet processes are not suitable for coating the surfaces of substrates with a large surface area and complex morphology. In this study, we investigated the film morphology and optical properties of SiO2 films prepared by a novel technique, namely, liquid phase deposition (LPD). Images of the SiO2 films were obtained by scanning electron microscopy (SEM) and atomic force microscopy (AFM) in order to study the surface morphology of these films: these images indicate that films deposited with different reaction times were uniform and dense and were composed of pure silica. Optical properties such as refractive index and transmittance were estimated by UV-vis spectroscopy and ellipsometry. SiO2 films with porous structures at the nanometer scale (100-250 nm) were successfully produced by LPD. The deposited film had excellent transmittance in the visible wavelength region.

  13. Tailoring the optical bandgap and magnetization of cobalt ferrite thin films through controlled zinc doping

    Directory of Open Access Journals (Sweden)

    Deepanshu Sharma

    2016-08-01

    Full Text Available In this report, the tuning of the optical bandgap and saturation magnetization of cobalt ferrite (CFO thin films through low doping of zinc (Zn has been demonstrated. The Zn doped CFO thin films with doping concentrations (0 to 10% have been synthesized by ultrasonic assisted chemical vapour deposition technique. The optical bandgap varies from 1.48 to 1.88 eV and saturation magnetization varies from 142 to 221 emu/cc with the increase in the doping concentration and this change in the optical and magnetic properties is attributed to the change in the relative population of the Co2+ at the tetrahedral and octahedral sites. Raman study confirms the decrease in the population of Co2+ at tetrahedral sites with controlled Zn doping in CFO thin films. A quantitative analysis has been presented to explain the observed variation in the optical bandgap and saturation magnetization.

  14. Determination of optical properties in nanostructured thin films using the Swanepoel method

    Science.gov (United States)

    Sánchez-González, J.; Díaz-Parralejo, A.; Ortiz, A. L.; Guiberteau, F.

    2006-06-01

    We present the methodological framework of the Swanepoel method for the spectrophotometric determination of optical properties in thin films using transmittance data. As an illustrative case study, we determined the refractive index, thickness, absorption index, and extinction coefficient of a nanostructured 3 mol% Y 2O 3-doped ZrO 2 (yttria stabilized zirconia, 3YSZ) thin film prepared by the sol-gel method and deposited by dipping onto a soda-lime glass substrate. In addition, using the absorption index obtained with the Swanepoel method, we calculated the optical band gap of the film. The refractive index was found to increase, then decrease, and finally stabilize with increasing wavelength of the radiation, while the absorption index and extinction coefficient decreased monotonically to zero. These trends are explained in terms of the location of the absorption bands. We also deduced that this 3YSZ thin film has a direct optical band gap of 4.6 eV. All these results compared well with those given in the literature for similar thin films. This suggests that the Swanepoel method has an important role to play in the optical characterization of ceramic thin films.

  15. Optical properties of nitrogen-doped graphene thin films probed by spectroscopic ellipsometry

    Energy Technology Data Exchange (ETDEWEB)

    Shen, C.C. [Department of Physics, National Taiwan Normal University, Taipei 11677, Taiwan (China); Tseng, C.C.; Lin, C.T.; Li, L.J. [Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei 10617, Taiwan (China); Liu, H.L., E-mail: hliu@ntnu.edu.tw [Department of Physics, National Taiwan Normal University, Taipei 11677, Taiwan (China)

    2014-11-28

    Nitrogen-doped graphene thin films were prepared by either chemical vapor deposition (CVD) or electrochemical exfoliation (ECE). Their optical properties were determined in the spectral region of 0.73–6.42 eV and at temperatures between 200 and 350 K by spectroscopic ellipsometry. The parameters of the dispersive structures were derived by numerical fitting of the experimental data to the stacked layer model. The optical absorption spectrum of the CVD-grown thin films is characterized by an asymmetric Fano resonance in the ultraviolet frequency region. In contrast, the line shape of the ECE-grown thin films displays less asymmetric. The excitonic resonance of the nitrogen-doped thin films is overall blue shifted by ∼ 0.2–0.3 eV compared with that of undoped analog. We interpret these results in terms of the exothermic nature of triazine molecule adsorption due to binding to graphene's surface via electron rich nitrogen. - Highlights: • Optical properties of N-doped graphene films determined by spectroscopic ellipsometry • Fano resonance in the ultraviolet frequency region of all graphene film absorption spectra • Blueshift in the excitonic resonance of N-doped graphene thin films is observed.

  16. Effect of Annealing on Structural and Optical Properties of Cu Doped In2O3 Thin Films

    OpenAIRE

    S. Kaleemulla; N. Madhusudhana Rao; N. Sai Krishna; M. Kuppan; M. Rigana Begam; M. Shobana

    2014-01-01

    Cu-doped In2O3 thin films were prepared using flash evaporation method at different Cu-doping levels. The effect of annealing was studied on the structure, morphology and optical properties of the thin films. The films exhibited cubic structure and optical transmittance of the films increasing with annealing temperature. The highest optical transmittance of 78 % was observed with band gap of 4.09 eV.

  17. Study of Linear and Non-Linear Optical Parameters of Zinc Selenide Thin Film

    Directory of Open Access Journals (Sweden)

    H. N. Desai

    2015-06-01

    Full Text Available Thin film of Zinc Selenide (ZnSe was deposited onto transparent glass substrate by thermal evaporation technique. ZnSe thin film was characterized by UV-Visible spectrophotometer within the wavelength range of 310 nm-1080 nm. The Linear optical parameters (linear optical absorption, extinction coefficient, refractive index and complex dielectric constant of ZnSe thin film were analyzed from absorption spectra. The optical band gap and Urbach energy were obtained by Tauc’s equation. The volume and surface energy loss function of ZnSe thin film were obtained by complex dielectric constant. The Dispersion parameters (dispersion energy, oscillation energy, moment of optical dispersion spectra, static dielectric constant and static refractive index were calculated using theoretical Wemple-DiDomenico model. The oscillation strength, oscillator wavelength, high frequency dielectric constant and high frequency refractive index were calculated by single Sellmeier oscillator model. Also, Lattice dielectric constant, N/m* and plasma resonance frequency were obtained. The electronic polarizibility of ZnSe thin film was estimated by Clausius-Mossotti local field polarizibility. The nonlinear optical parameters (non-linear susceptibility and non-linear refractive index were estimated.

  18. Enhanced optical absorption by Ag nanoparticles in a thin film Si solar cell

    Institute of Scientific and Technical Information of China (English)

    Chen Feng-Xiang; Wang Li-Sheng; Xu Wen-Ying

    2013-01-01

    Thin film solar cells have the potential to significantly reduce the cost of photovoltaics.Light trapping is crucial to such a thin film silicon solar cell because of a low absorption coefficient due to its indirect band gap.In this paper,we investigate the suitability of surface plasmon resonance Ag nanoparticles for enhancing optical absorption in the thin film solar cell.For evaluating the transmittance capability of Ag nanoparticles and the conventional antireflection film,an enhanced transmittance factor is introduced.We find that under the solar spectrum AM1.5,the transmittance of Ag nanoparticles with radius over 160 nm is equivalent to that of conventional textured antireflection film,and its effect is better than that of the planar antireflection film.The influence of the surrounding medium is also discussed.

  19. Influence of Bi doping on the electrical and optical properties of ZnO thin films

    Science.gov (United States)

    Abed, S.; Bougharraf, H.; Bouchouit, K.; Sofiani, Z.; Derkowska-Zielinska, B.; Aida, M. S.; Sahraoui, B.

    2015-09-01

    Transparent conducting ZnO doped Bi thin films were prepared on glass substrates by ultrasonic spray method. The influence of Bi doping concentration on the structural, optical and nonlinear optical properties of ZnO thin films was studied. The X-ray diffraction (XRD) analysis show that all studied films have a hexagonal wurtzite structure and are preferentially oriented along the c-axis from substrate surface. Optical transmittance measurements show that all samples have average 80% transparency in the visible light. Optical band gap values range between 3.14 and 3.28 eV. ZnO film with 3 wt% of Bi showed the highest electrical conductivity. In addition, the second and third order nonlinear susceptibilities were determined and their values have been calculated.

  20. Optical Properties of Bi Doped Amorphous Se-Te Thin Films

    Science.gov (United States)

    Kumar, Anup; Heera, Pawan; Barman, P. B.; Sharma, Raman

    2011-12-01

    Effect of Bismuth (Bi) doping on the optical constants of Se-Te thin films, prepared by thermal vacuum evaporation technique, is investigated using Swanepoel method. The optical constants i.e. refractive index (n), film thickness, absorption coefficient and optical energy gap are calculated from the transmission spectra. It has been found that refractive index decreases with wavelength, for all compositions and the absorption coefficient increases with increase in optical energy. On the other hand the optical band gap is found to decreases with increase in Bi content.

  1. Optical Properties and Characterization of Prepared Sn-Doped PbSe Thin Film

    Directory of Open Access Journals (Sweden)

    M. R. Khanlary

    2012-01-01

    Full Text Available Physical vapor deposition of tin-doped lead selenide (Sn/PbSe thin films on SiO2 glass is described. Interaction of high-energy Ar+ ions bombardment on the doped PbSe films is discussed by XRD analysis. The improvement of optical band gap of Sn/PbSe films irradiated by different doses of irradiation was studied using transmission spectroscopy.

  2. Conformal self-assembled thin films for optical pH sensors

    Science.gov (United States)

    Topasna, Daniela M.; Topasna, Gregory A.; Liu, Minghanbo; Tseng, Ching-Hung

    2016-04-01

    Simple, reliable, lightweight, and inexpensive thin films based sensors are still in intense development and high demand in many applications such as biomedical, industrial, environmental, military, and consumer products. One important class of sensors is the optical pH sensor. In addition, conformal thin film based sensors extend the range of application for pH optical sensors. We present the results on the fabrication and characterization of optical pH sensing coatings made through ionic self-assembled technique. These thin films are based on the combination of a polyelectrolyte and water-soluble organic dye molecule Direct Yellow 4. A series of films was fabricated and characterized in order to determine the optimized parameters of the polymer and of the organic dye solutions. The optical pH responses of these films were also studied. The transparent films were immersed in solutions at various temperature and pH values. The films are stable when immersed in solutions with pH below 9.0 and temperatures below 90 °C and they maintain their performance after longer immersion times. We also demonstrate the functionality of these coatings as conformal films.

  3. Optically controlled polarization in highly oriented ferroelectric thin films

    Science.gov (United States)

    Borkar, Hitesh; Tomar, M.; Gupta, Vinay; Katiyar, Ram S.; Scott, J. F.; Kumar, Ashok

    2017-08-01

    The out-of-plane and in-plane polarization of (Pb0.6Li0.2Bi0.2)(Zr0.2Ti0.8)O3 (PLBZT) thin film has been studied in the dark and under illumination from a weak light source of a comparable bandgap. A highly oriented PLBZT thin film was grown on a LaNiO3/LaAlO3 substrate by pulsed laser deposition; it showed well-saturated polarization which was significantly enhanced under light illumination. We employed two configurations for polarization characterization: the first deals with out-of-plane polarization with a single capacitor under investigation, whereas the second uses two capacitors connected in series via the bottom electrode. Two different configurations were illuminated using different energy sources and their effects were studied. The latter configuration shows a significant change in polarization under light illumination that may provide an extra degree of freedom for device miniaturization. The polarization was also tested using positive-up and negative-down measurements, confirming robust polarization and its switching under illumination.

  4. Optical properties on thermally evaporated and heat-treated disodium phthalocyanine derivative thin films

    Indian Academy of Sciences (India)

    M E Sánchez-Vergara; M Rivera; R A Torres-García; C O Perez-Baeza; E A Loza-Neri

    2014-08-01

    Thin films were grown on quartz substrates and crystalline silicon wafers using disodium phthalocyanine and the organic ligands 2,6-diaminoanthraquinone, 2,6-dihydroxianthraquinone and its potassium derivative salt. The surface morphology of these films was analysed by atomic force microscopy (AFM) and scanning electron microscopy (SEM). IR spectroscopy was employed in order to investigate possible changes of the intra-molecular bonds between the powder compounds and thin films. The optical parameters have been investigated using spectrophotometric measurements of absorbance in the wavelength range of 200–1100 nm and the effects of post-deposition heat treatment were analysed. The absorption spectra recorded in the UV–Vis region for the deposited samples showed two bands, namely the Q and Soret bands. The absorption coefficient in the absorption region reveals non-direct transitions. In addition, the optical gap dependence upon the thickness of these thin films was evaluated.

  5. Investigations of electrical and optical properties of functional TCO thin films

    Directory of Open Access Journals (Sweden)

    Domaradzki Jarosław

    2015-06-01

    Full Text Available Transparent conducting oxide (TCO films of indium-tin-oxide were evaporated on the surface of silicon wafers after phosphorous diffusion and on the reference glass substrates. The influence of deposition process parameters (electron beam current, oxygen flow and the substrate temperature on optical and electrical properties of evaporated thin films were investigated by means of resistivity measurements and optical spectrophotometry. The performance of prepared thin films was judged by calculated figure of merit and the best result was obtained for the sample deposited on the substrate heated to the 100 °C and then removed from the deposition chamber and annealed in an air for 5 minutes at 400 °C. Refractive index and extinction coefficient were evaluated based on measured transmission spectra and used for designing of antireflection coating for solar cell. The obtained results showed that prepared TCO thin films are promising as a part of counter electrode in crystalline silicon solar cell construction.

  6. Preparation of Magneto-Optic Ce:YIG Thin Films for Integrated Optical Isolator

    Institute of Scientific and Technical Information of China (English)

    2003-01-01

    This paper presents the growth of cerium substituted YIG (Ce1 YIG) thin films on silica substrate.The large Faraday rotation coefficient and strong in-plane anisotropy were observed. The film is desirable for waveguide configuration isolator application.

  7. Electrical, electronic and optical properties of amorphous indium zinc tin oxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Denny, Yus Rama [Department of Physics, Chungbuk National University, Cheongju 361-763 (Korea, Republic of); Department of Electrical Engineering, University of Sultan Ageng Tirtayasa, Banten, Serang, 42435 (Indonesia); Lee, Kangil; Seo, Soonjoo; Oh, Suhk Kun [Department of Physics, Chungbuk National University, Cheongju 361-763 (Korea, Republic of); Kang, Hee Jae, E-mail: hjkang@cbu.ac.kr [Department of Physics, Chungbuk National University, Cheongju 361-763 (Korea, Republic of); Yang, Dong Seok [Department of Physics Education, Chungbuk National University, Cheongju 361-763 (Korea, Republic of); Heo, Sung; Chung, Jae Gwan; Lee, Jae Cheol [Analytical Engineering Center, Samsung Advanced Institute of Technology, Suwon 440-600 (Korea, Republic of)

    2014-10-01

    Highlights: • The electronic property of indium zinc tin oxide thin films was investigated by using XPS and REELS. • The band gap varied with different In/Zn/Sn compositions. • The EXAFS results showed that the smaller Zn–Zn separation distance led to higher electron mobility. • The Sn/Zn composition ratio played a crucial role in improving the electrical properties of a-IZTO thin films. - Abstract: The electrical and optical properties of amorphous indium zinc tin oxide (a-IZTO) thin films were examined as a function of chemical composition. Effects of Sn/Zn composition ratio and In content on the electrical and optical properties of a-IZTO thin films are discussed. The electron mobility of thin film transistors with higher Sn/Zn composition ratio was dramatically improved due to a shorter zinc–zinc separation distance. The thin film transistor with the composition of In:Zn:Sn = 20:48:32 exhibits a high mobility of 30.6 cm{sup 2} V{sup −1} s{sup −1} and a high on–off current ratio of 10{sup 9}.

  8. Simulation of reflectivity spectrum for non-absorbing multilayer optical thin films

    Indian Academy of Sciences (India)

    V A Kheraj; C J Panchal; M S Desai; V Potbhare

    2009-06-01

    Reflectivity simulation is an essential tool for the design and optimization of optical thin films. We have developed a reflectivity simulator for non-absorbing dielectric multilayer optical thin films using LabVIEW. The name of the substrate material as well as the material and thickness of each layer of the multilayer stack are fed into the program as input parameters in a pop-up window. The program calculates reflectivity spectrum for the given range of wavelengths using layer thicknesses and dispersion data of refractive indices for the defined stack of dielectric materials. The simulated reflectivity spectra for various combinations of materials in multilayer stacks are presented and compared with the experimental results of the multilayer optical thin films grown by electron-beam evaporation technique.

  9. Hybrid enabled thin film metrology using XPS and optical

    Science.gov (United States)

    Vaid, Alok; Iddawela, Givantha; Mahendrakar, Sridhar; Lenahan, Michael; Hossain, Mainul; Timoney, Padraig; Bello, Abner F.; Bozdog, Cornel; Pois, Heath; Lee, Wei Ti; Klare, Mark; Kwan, Michael; Kang, Byung Cheol; Isbester, Paul; Sendelbach, Matthew; Yellai, Naren; Dasari, Prasad; Larson, Tom

    2016-03-01

    Complexity of process steps integration and material systems for next-generation technology nodes is reaching unprecedented levels, the appetite for higher sampling rates is on the rise, while the process window continues to shrink. Current thickness metrology specifications reach as low as 0.1A for total error budget - breathing new life into an old paradigm with lower visibility for past few metrology nodes: accuracy. Furthermore, for advance nodes there is growing demand to measure film thickness and composition on devices/product instead of surrogate planar simpler pads. Here we extend our earlier work in Hybrid Metrology to the combination of X-Ray based reference technologies (high performance) with optical high volume manufacturing (HVM) workhorse metrology (high throughput). Our stated goal is: put more "eyes" on the wafer (higher sampling) and enable move to films on pattern structure (control what matters). Examples of 1X front-end applications are used to setup and validate the benefits.

  10. Effect of annealing on the optical properties of Ag 33Sb 31Se 36 thin films

    Science.gov (United States)

    El-Wahabb, E. Abd; Bekheet, A. E.

    2001-03-01

    Ag 33Sb 31Se 36 thin films were prepared by thermal evaporation technique on glass substrates. X-ray diffraction analysis for the as-deposited films showed that they have amorphous structure. On annealing at 200°C films have a polycrystalline structure. The optical constants n and k of the as-deposited and annealed films have been calculated from optical transmittance and reflectance data in the wavelength range 400-1500 nm using Murmann's equations. Both n and k are practically independent on the film thickness in the range 182-478 nm. Analysis of the refractive index n yields a low frequency dielectric constant. The optical transitions are found to be allowed indirect for the as-deposited and annealed films, and the corresponding energy gaps increase with increasing annealing temperature.

  11. Structural and Optical Properties of CdS Thin Film Grown by Chemical Bath Deposition

    Directory of Open Access Journals (Sweden)

    S. Rajpal

    2013-07-01

    Full Text Available In this work we report synthesis and optical characterization of CdS thin films coated on glass substrate. The films were deposited using chemical bath deposition method. Scanning Electron microscopy shows a uniform film of CdS film at particular concentration and dipping time. The Energy Dispersive spectroscopy reveals the presence of Cd and S in the CdS film. X-Ray diffraction confirms the cubic structure of CdS deposited on glass and amorphous nature of glass. Optical and photoluminescence studies were done using UV-Visible spectroscopy and Photoluminescence spectroscopy respectively. We have determined bandgap by analyzing UV-Visible spectra results. Wettability studies were done using Optical Contact Angle, which confirms the hydrophobic nature of the CdS films.

  12. Optical waveguide BTX gas sensor based on polyacrylate resin thin film.

    Science.gov (United States)

    Kadir, Razak; Yimit, Abliz; Ablat, Hayrensa; Mahmut, Mamtimin; Itoh, Kiminori

    2009-07-01

    An optical sensor sensitive to BTX has been developed by spin coating a thin film of polyacrylate resin onto a tin- diffused glass optical waveguide. A pair of prism coupler was employed for optical coupling matched with diiodomethane (CH2l2). The guided wave transmits in waveguide layer and passes through the film as an evanescent wave. Polyacrylate film has a strong capacity of absorbing oil gases. The film is stable in N2 but benzene exposure at room temperature can result in rapid and reversible changes of transmittance (7) and refractive index (n1) of this film. It has been demonstrated that the sensor containing a 10 mm boardand about a hundred nanometers thick resin film can detect lower than 8 ppm BTX.

  13. Structural, morphological, optical and electrical properties of spray deposited lithium doped CdO thin films

    Energy Technology Data Exchange (ETDEWEB)

    Velusamy, P.; Babu, R. Ramesh, E-mail: rampap2k@yahoo.co.in [Crystal Growth and Thin Films Laboratory, Department of Physics, Bharathidasan University, Tiruchirappalli-620 024, Tamil Nadu (India); Ramamurthi, K. [Crystal Growth and Thin Films Laboratory, Department of Physics and Nanotechnology, Faculty of Engineering and Technology, SRM University, Kattankulathur – 603 203, Tamil Nadu (India)

    2016-05-23

    In the present work, CdO and Li doped CdO thin films were deposited on microscopic glass substrates at 300°C by a spray pyrolysis experimental setup. The deposited CdO and Li doped CdO thin films were subjected to XRD, SEM, UV-VIS spectroscopy and Hall measurement analyses. XRD studies revealed the polycrystalline nature of the deposited films and confirmed that the deposited CdO and Li doped CdO thin films belong to cubic crystal system. The Scanning electron microscopy analysis revealed the information on shape of CdO and Li doped CdO films. Electrical study reveals the n-type semiconducting nature of CdO and the optical band gap is varied between 2.38 and 2.44 eV, depending on the Li doping concentrations.

  14. Structural, morphological, optical and electrical properties of spray deposited lithium doped CdO thin films

    Science.gov (United States)

    Velusamy, P.; Babu, R. Ramesh; Ramamurthi, K.

    2016-05-01

    In the present work, CdO and Li doped CdO thin films were deposited on microscopic glass substrates at 300˚C by a spray pyrolysis experimental setup. The deposited CdO and Li doped CdO thin films were subjected to XRD, SEM, UV-VIS spectroscopy and Hall measurement analyses. XRD studies revealed the polycrystalline nature of the deposited films and confirmed that the deposited CdO and Li doped CdO thin films belong to cubic crystal system. The Scanning electron microscopy analysis revealed the information on shape of CdO and Li doped CdO films. Electrical study reveals the n-type semiconducting nature of CdO and the optical band gap is varied between 2.38 and 2.44 eV, depending on the Li doping concentrations.

  15. Preparation, structure and optical properties of transparent conducting gallium-doped zinc oxide thin films

    Directory of Open Access Journals (Sweden)

    Gu J. H.

    2015-09-01

    Full Text Available Highly conductive gallium-doped zinc oxide (GZO transparent thin films were deposited on glass substrates by RF mag­netron sputtering. The deposited films were characterized by X-ray diffraction (XRD, X-ray photoelectron spectroscopy (XPS, four-point probe and UV-Vis spectrophotometer, respectively. The effect of growth temperature on the structure and optoelectrical properties of the films was investigated. The results demonstrate that high quality GZO films oriented with their crystal­lographic c-axis perpendicular to the substrates are obtained. The structure and optoelectrical properties of the films are highly dependent on the growth temperature. It is found that with increasing growth temperature, the average visible transmittance of the deposited films is enhanced and the residual stress in the thin films is obviously relaxed. The GZO films deposited at the growth temperature of 400°C, which have the largest grain size (74.3 nm, the lowest electrical resistivity (1.31×10-3 Ω·cm and the maximum figure of merit (1.46×1O-2Ω-1, exhibit the best optoelectrical properties. Furthermore, the optical proper­ties of the deposited films were determined by the optical characterization methods and the optical energy-gaps were evaluated by extrapolation method. A blue shift of the optical energy gap is observed with an increase in the growth temperature.

  16. Structural, Optical, and Electrical Characterization of Spray Pyrolysed Indium Sulfide Thin Films

    Science.gov (United States)

    Rahman, F.; Podder, J.; Ichimura, M.

    2013-03-01

    Indium sulfide (In2S3) thin films were deposited onto the glass substrates by a low cost simple spray pyrolysis technique at 300°C temperature. Aqueous solution of indium chloride and thiourea were used to deposit the binary In-S film. The deposited thin films were annealed at 400° and 500°C temperatures and characterized structurally, optically and electrically using EDX, X-ray diffraction, UV-visible spectroscopy and four probe van der Pauw methods. The optical constants such as refractive index and extinction coefficient are calculated from absorbance and transmittance data from 300 to 1100 nm wavelength. The optical transmittance increased after annealing at 400° and 500°C. The band gap energy was reduced from 2.90 to 2.50 eV after annealing the as deposited films. The electrical conductivity as well as the activation energy was increased after annealing the samples.

  17. UV optical properties of thin film oxide layers deposited by different processes.

    Science.gov (United States)

    Pellicori, Samuel F; Martinez, Carol L

    2011-10-01

    UV optical properties of thin film layers of compound and mixed oxide materials deposited by different processes are presented. Japan Electron Optics Laboratory plasma ion assisted deposition (JEOL PIAD), electron beam with and without IAD, and pulsed DC magnetron sputtering were used. Comparisons are made with published deposition process data. Refractive indices and absorption values to as short as 145 nm were measured by spectroscopic ellipsometry (SE). Electronic interband defect states are detected that are deposition-process dependent. SE might be effective in identifying UV optical film quality, especially in defining processes and material composition beneficial for high-energy excimer laser applications and environments requiring stable optical properties.

  18. Synthesis, microstructural, optical and mechanical properties of yttria stabilized zirconia thin films

    Energy Technology Data Exchange (ETDEWEB)

    Amezaga-Madrid, P.; Hurtado-Macias, A.; Antunez-Flores, W.; Estrada-Ortiz, F.; Piza-Ruiz, P. [Centro de Investigacion en Materiales Avanzados S. C., and Laboratorio Nacional de Nanotecnologia. Miguel de Cervantes 120, Chihuahua, Chih., C.P. 31109 (Mexico); Miki-Yoshida, M., E-mail: mario.miki@cimav.edu.mx [Centro de Investigacion en Materiales Avanzados S. C., and Laboratorio Nacional de Nanotecnologia. Miguel de Cervantes 120, Chihuahua, Chih., C.P. 31109 (Mexico)

    2012-09-25

    Highlights: Black-Right-Pointing-Pointer Thin films of YSZ obtained by AACVD have high quality. Black-Right-Pointing-Pointer They are uniform, very transparent, and have high hardness. Black-Right-Pointing-Pointer Optical characterization were performed in detail, optical constants and band gap energy were determined as a function of dopant content. - Abstract: Thin films of yttria-stabilized zirconia (YSZ) exhibit exceptional properties, such as high thermal, chemical and mechanical stability. Here, we report the synthesis of YSZ thin films by aerosol assisted chemical vapour deposition onto borosilicate glass and fused silica substrates. Optimum deposition temperature was 673 {+-} 5 K. In addition, different Y content was tried to analyse its influence in the microstructure and properties of the films. The films were uniform, transparent and non-light scattering. Surface morphology and cross sectional microstructure were studied by field emission scanning electron microscopy. The microstructure of the films was characterized by grazing incidence X-ray diffraction. Crystallite size and lattice parameter were obtained. Optical properties were analysed from reflectance and transmittance spectra; from these measurements, optical constants and band gap were obtained. Quantum confinement effect, due to the small grain size of the films, was evident in the high band gap energy obtained. Nanoindentation tests were realized at room temperature employing the continuous stiffness measurement method, to determine the hardness and elastic modulus as a function of Y content.

  19. Optical, electrical and thermoelectric power studies of Al–Sb thin film bilayer structure

    Indian Academy of Sciences (India)

    M Singh; J S Arora; Y K Vijay; M Sudharshan

    2006-02-01

    The III–V semiconductors are of great importance due to their applications in various electro-optic devices. The Al–Sb thin film was deposited on glass substrate by thermal evaporation method at a pressure of 10-5 torr. The samples were annealed for 3 h at different constant temperatures in a vacuum chamber at a pressure of 10-5 torr. The electrical resistance vs temperature studies show phase transformation from metallic to semiconducting. The observed positive thermoelectric power indicates that Al–Sb thin films are -type in nature. The Rutherford back scattering analysis and optical band gap measurements also indicate that the interdiffusion concentration varies with temperature.

  20. Effect of air annealing on the optical electrical and structural properties of carbazole thin films

    Energy Technology Data Exchange (ETDEWEB)

    Pisharady, Sreejith K. [School of Pure and Applied Physics, Mahatma Gandhi University, Kottayam, Kerala 656560 (India)]. E-mail: skpishar@yahoo.co.in; Menon, C.S. [School of Pure and Applied Physics, Mahatma Gandhi University, Kottayam, Kerala 656560 (India); Sudarshana Kumar, C. [School of Pure and Applied Physics, Mahatma Gandhi University, Kottayam, Kerala 656560 (India); Gopinathan, T.G. [School of Pure and Applied Physics, Mahatma Gandhi University, Kottayam, Kerala 656560 (India)

    2006-11-10

    Thin films of carbazole films have been prepared using vacuum sublimation technique. Post-evaporation annealing is done for various periods of time. The optical absorption spectrum is recorded and the band gap is calculated from the observed spectrum. The current-voltage characteristics are studied for the sandwiched structure of carbazole thin films with silver electrodes. From the J-V characteristics trap density and number of thermally generated charge carriers are determined. Their structure and grain size have been determined from the X-ray diffraction studies.

  1. Optical and magneto-optical properties of metal phthalocyanine and metal porphyrin thin films.

    Science.gov (United States)

    Birnbaum, Tobias; Hahn, Torsten; Martin, Claudia; Kortus, Jens; Fronk, Michael; Lungwitz, Frank; Zahn, Dietrich R T; Salvan, Georgeta

    2014-03-12

    The optical constants together with the magneto-optical Voigt constants of several phthalocyanine (Pc) and methoxy functionalized tetraphenylporphyrin (TMPP) thin films prepared on silicon substrates are presented. The materials investigated are MePc with Me = Fe, Co, Ni, Cu, Zn and MeTMPP with Me = Cu, Ni. We also compared our results to the metal-free H2Pc, H2TPP and H2TMPP. The experimental results will be supported by electronic structure calculations based on density functional theory (DFT) and interpreted using the perimeter model initially proposed by Platt. The model allows for qualitative understanding of the forbidden character of transitions in planar, aromatic molecules, and is able to qualify differences between Pc and TMPP type materials.

  2. Linear and nonlinear optical properties of SrBi4Ti4O15 thin films

    Science.gov (United States)

    Rambabu, A.; Reddy, E. Sivanagi; Hamad, Syed; Raju, K. C. James; Rao, S. Venugopal

    2016-05-01

    Polycrystalline SrBi4Ti4O15 thin films with good morphology and layered perovskite structure were fabricated on fused silica substrates using r f magnetron sputtering system at various oxygen mixing percentages (25 and 50). The crystallite sizes of the particles are in 17-28 nm range. The Nonlinear optical properties were investigated by using Z-scan method at a wavelength of 800 nm with 2 ps duration pulses. The films exhibit the fast and giant optical nonlinearities having the two-photon absorption coefficient (β) with magnitude of 10-8-10-9 cm/W and the nonlinear refraction coefficient of ˜10-12 cm2/W. These results indicate SrBi4Ti4O15 thin films are promising candidates for applications in nonlinear optical and optical signal processing devices.

  3. Synthesis and optical characterization of nanocrystalline CdTe thin films

    Science.gov (United States)

    Al-Ghamdi, A. A.; Khan, Shamshad A.; Nagat, A.; Abd El-Sadek, M. S.

    2010-11-01

    From several years the study of binary compounds has been intensified in order to find new materials for solar photocells. The development of thin film solar cells is an active area of research at this time. Much attention has been paid to the development of low cost, high efficiency thin film solar cells. CdTe is one of the suitable candidates for the production of thin film solar cells due to its ideal band gap, high absorption coefficient. The present work deals with thickness dependent study of CdTe thin films. Nanocrystalline CdTe bulk powder was synthesized by wet chemical route at pH≈11.2 using cadmium chloride and potassium telluride as starting materials. The product sample was characterized by transmission electron microscope, X-ray diffraction and scanning electron microscope. The structural characteristics studied by X-ray diffraction showed that the films are polycrystalline in nature. CdTe thin films with thickness 40, 60, 80 and 100 nm were prepared on glass substrates by using thermal evaporation onto glass substrate under a vacuum of 10 -6 Torr. The optical constants (absorption coefficient, optical band gap, refractive index, extinction coefficient, real and imaginary part of dielectric constant) of CdTe thin films was studied as a function of photon energy in the wavelength region 400-2000 nm. Analysis of the optical absorption data shows that the rule of direct transitions predominates. It has been found that the absorption coefficient, refractive index ( n) and extinction coefficient ( k) decreases while the values of optical band gap increase with an increase in thickness from 40 to 100 nm, which can be explained qualitatively by a thickness dependence of the grain size through decrease in grain boundary barrier height with grain size.

  4. RF sputtered CuO thin films: Structural, optical and photo-catalytic behavior

    Science.gov (United States)

    Al-Ghamdi, Attieh A.; Khedr, M. H.; Shahnawaze Ansari, M.; Hasan, P. M. Z.; Abdel-wahab, M. Sh.; Farghali, A. A.

    2016-07-01

    Nanocrystalline CuO thin films were deposited for 600, 1200 and 1800 s on glass substrate using RF magnetron sputtering technique. The films deposited at room temperature were crystalline and showed Tenorite phase of CuO. The increase in average particle size from 6.67 nm to 9.09 nm and the thickness from 160 nm to 490 nm was observed with the increase in deposition time. The optical band gap was decreased from 2.2 eV to 1.73 eV as the film thickness was increased. The intensity of PL peak showed its maximum for the film deposited for 600 s and minimum for 1800 s. Some unusual emission peaks were observed due to the quantization effect and lattice/surface defects. The CuO films with different thicknesses could be used as photo-catalysts for the degradation of Methylene blue (MB) from the wastewater. Under the exposure of 200 W energy of tungsten lamp, CuO thin films showed excellent photo-catalytic activities. CuO thin film of minimum thickness of around 160 nm responded as a best catalyst for MB degradation. The films were very stable and have a speciality to be recycled without much loss of their photo-catalytic activity. These characteristics have proved the high possibility of commercial applications of CuO thin films in environmental remediation.

  5. Optical and electrical properties of thin NiO films deposited by reactive magnetron sputtering and spray pyrolysis

    Science.gov (United States)

    Parkhomenko, H. P.; Solovan, M. N.; Mostovoi, A. I.; Orletskii, I. G.; Parfenyuk, O. A.; Maryanchuk, P. D.

    2017-06-01

    Thin NiO films are deposited by reactive magnetron sputtering and spray pyrolysis. The main optical constants, i.e., refractive index n(λ), absorption coefficient α(λ), extinction coefficient k(λ), and thickness d, are determined. The temperature dependence of the resistance of thin films is found, and the activation energy of films deposited by different methods is determined.

  6. Investigation in morphology and optical properties of electron beam gun evaporated nanostructured Bromoindium phthalocyanine thin films

    Science.gov (United States)

    Azim-Araghi, M. E.; Sahebi, R.

    2014-01-01

    Bromoindium phthalocyanine in thin film form was prepared by electron beam gun evaporation technique, using pre-cleaned polyborosilicate glass as substrate. 2D AFM image confirms that the surface of BrInPc thin film is granular with a grain size of 40-60 nm. 3D AFM image confirms that surface is homogeneous and its RMS roughness is 4.9 nm. The UV-VIS absorption spectrum showed two well-known absorption bands of the phthalocyanines, B and Q bands and characteristics Davydov splitting were observed. The optical transition determined to be direct allowed and the value of optical band gap was obtained. The value of Urbach energy was calculated. To investigation in the effect of thermal annealing on optical properties of BrInPc thin films, we annealed some thin films at 473 and 603 K for 1 h. As the result of thermal annealing we observed another absorption peak, named N-band, in absorption spectrum. A red shift observed in the position of B-band and Q-band peaks. There was not changing in optical transition mechanism. The value of optical band gap decreased and the Urbach energy increased as the result of thermal annealing.

  7. Optical constants of thermally evaporated As10Te10S80 thin films

    Science.gov (United States)

    Moharram, A. H.

    The transmission spectra of thermally evaporated As10Te10S80 thin films were measured over the wavelength range 300 to 900 nm. A simple method, suggested by Swanepoel, was used for the determination of the optical constants and thickness of the film. The absorption edge is described using the non-direct transition model proposed by Tauc. The effect of one hour's thermal annealing in the temperatures range 300-475 K on the optical properties of the As10Te10S80 film is reported and explained.

  8. Glass Difractive Optical Elements (DOEs with complex modulation DLC thin film coated

    Directory of Open Access Journals (Sweden)

    Marina Sparvoli

    2008-09-01

    Full Text Available We developed a complex (amplitude and phase modulation Diffractive Optical Element (DOE with four phase levels, which is based in a glass substrate coated with DLC (Diamond Like Carbon thin film as the amplitude modulator. The DLC film was deposited by magnetron reactive sputtering with a graphite target and methane gas in an optical glass surface. The glass and DLC film roughness were measured using non destructive methods, such as a high step meter, Atomic Force Microscopy and Diffuse Reflectance. Other properties, such as refractive index of both materials were measured. The DOEs were tested using 632.8 nm HeNe laser.

  9. Structural and optical properties of electron beam evaporated yttria stabilized zirconia thin films

    Energy Technology Data Exchange (ETDEWEB)

    Kirubaharan, A. Kamalan; Kuppusami, P., E-mail: pkigcar@gmail.com; Dharini, T.; Ramachandran, D. [Centre for Nanoscience and Nanotechnology, Sathyabama University, Chennai-600119 (India); Singh, Akash; Mohandas, E. [Physical Metallurgy Group, Indira Gandhi Centre for Atomic Research, Kalpakkam 603102 (India)

    2015-06-24

    Yttria stabilized zirconia (10 mole % Y{sub 2}O{sub 3}) thin films were deposited on quartz substrates using electron beam physical vapor deposition at the substrate temperatures in the range 300 – 973 K. XRD analysis showed cubic crystalline phase of YSZ films with preferred orientation along (111). The surface roughness was found to increase with the increase of deposition temperatures. The optical band gap of ∼5.7 eV was calculated from transmittance curves. The variation in the optical properties is correlated with the changes in the microstructural features of the films prepared as a function of substrate temperature.

  10. Light irradiation tuning of surface wettability, optical, and electric properties of graphene oxide thin films

    Science.gov (United States)

    Furio, A.; Landi, G.; Altavilla, C.; Sofia, D.; Iannace, S.; Sorrentino, A.; Neitzert, H. C.

    2017-02-01

    In this work the preparation of flexible polymeric films with controlled electrical conductivity, light transmission and surface wettability is reported. A drop casted graphene oxide thin film is photo-reduced at different levels by UV light or laser irradiation. Optical microscopy, IR spectroscopy, electrical characterization, Raman spectroscopy and static water contact angle measurements are used in order to characterize the effects of the various reduction methods. Correlations between the optical, electrical and structural properties are reported and compared to previous literature results. These correlations provide a useful tool for independently tuning the properties of these films for specific applications.

  11. Size dependent optical characteristics of chemically deposited nanostructured ZnS thin films

    Indian Academy of Sciences (India)

    A U Ubale; V S Sangawar; D K Kulkarni

    2007-04-01

    ZnS thin films of different thicknesses were prepared by chemical bath deposition using thiourea and zinc acetate as S2- and Zn2+ source. The effect of film thickness on the optical and structural properties was studied. The optical absorption studies in the wavelength range 250–750 nm show that band gap energy of ZnS increases from 3.68–4.10 eV as thickness varied from 332–76 nm. The structural estimation shows variation in grain size from 6.9–17.8 nm with thickness. The thermoemf measurement indicates that films prepared by this method are of -type.

  12. Electrical and Optical Properties of GeSi−:H Thin Films Prepared by Thermal Evaporation Method

    Directory of Open Access Journals (Sweden)

    A. A. J. Al-Douri

    2010-01-01

    Full Text Available Thin a-GeSi1−:H films were grown successfully by fabrication of designated ingot followed by evaporation onto glass slides. A range of growth conditions, Ge contents, dopant concentration (Al and As, and substrate temperature, were employed. Stoichiometry of the thin films composition was confirmed using standard surface techniques. The structure of all films was amorphous. Film composition and deposition parameters were investigated for their bearing on film electrical and optical properties. More than one transport mechanism is indicated. It was observed that increasing substrate temperature, Ge contents, and dopant concentration lead to a decrease in the optical energy gap of those films. The role of the deposition conditions on values of the optical constants was determined. Accordingly, models of the density of states for the Ge0.5Si0.5:H thin films as pure, doped with 3.5% of Al (p-type and that doped with 3.5% As (n-type, were proposed.

  13. Thin films of metal-organic compounds and metal nanoparticle-embedded polymers for nonlinear optical applications

    Indian Academy of Sciences (India)

    S Philip Anthony; Shatabdi Porel; D Narayana Rao; T P Radhakrishnan

    2005-11-01

    Thin films based on two very different metal-organic systems are developed and some nonlinear optical applications are explored. A family of zinc complexes which form perfectly polar assemblies in their crystalline state are found to organize as uniaxially oriented crystallites in vapor deposited thin films on glass substrate. Optical second harmonic generation from these films is investigated. A simple protocol is developed for the in-situ fabrication of highly monodisperse silver nanoparticles in a polymer film matrix. The methodology can be used to produce free-standing films. Optical limiting capability of the nanoparticle-embedded polymer film is demonstrated.

  14. Structural, Optical, and Dielectric Properties of Azure B Thin Films and Impact of Thermal Annealing

    Science.gov (United States)

    Zeyada, H. M.; Zidan, H. M.; Abdelghany, A. M.; Abbas, I.

    2017-03-01

    Thin films of azure B (AB) have been prepared by thermal evaporation. Structural, optical, and dielectric characteristics of as-prepared and annealed samples were studied. AB is polycrystalline in as-synthesized powder form. Detailed x-ray diffraction studies showed amorphous structure for pristine and annealed films. Fourier-transform infrared vibrational spectroscopy indicated minor changes in molecular bonds of AB thin films either after deposition or after thermal annealing. Optical transmittance and reflection spectra of prepared thin films were studied at nearly normal light incidence in the spectral range from 200 nm to 2500 nm, showing marked changes without new peaks. Annealing increased the absorption coefficient and decreased the optical bandgap. Onset and optical energy gaps of pristine films were found to obey indirect allowed transition with values of 1.10 eV and 2.64 eV, respectively. Annealing decreased the onset and optical energy gaps to 1.0 eV and 2.57 eV, respectively. The dispersion parameters before and after annealing are discussed in terms of a single-oscillator model. The spectra of the dielectric constants (ɛ 1, ɛ 2) were found to depend on the annealing temperature in addition to the incident photon energy.

  15. Structural, optical, photoluminescence, dielectric and electrical studies of vacuum-evaporated CdTe thin films

    Indian Academy of Sciences (India)

    Ziaul Raza Khan; M Zulfequar; Mohd Shahid Khan

    2012-04-01

    Highly-oriented CdTe thin films were fabricated on quartz and glass substrates by thermal evaporation technique in the vacuum of about 2 × 10-5 torr. The CdTe thin films were characterized by X-ray diffraction (XRD), UV–VIS–NIR, photoluminescence spectroscopy and scanning electron microscopy (SEM). X-ray diffraction results showed that the films were polycrystalline with cubic structure and had preferred growth of grains along the (111) crystallographic direction. Scanning electron micrographs showed that the growth of crystallites of comparable size on both the substrates. At the room temperature, photoluminescence spectra of the films on both the substrates showed sharp peaks with a maximum at 805 nm. This band showed significant narrowing suggesting that it originates from the transitions involving grain boundary defects. The refractive index of CdTe thin films was calculated using interference pattern of transmission spectra. The optical band gap of thin films was found to allow direct transition with energy gap of 1.47–1.50 eV. a.c. conductivity of CdTe thin films was found to increase with the increase in frequency whereas dielectric constant was observed to decrease with the increase in frequency.

  16. Determination of dispersive optical constants of nanocrystalline CdSe (nc-CdSe) thin films

    Energy Technology Data Exchange (ETDEWEB)

    Sharma, Kriti; Al-Kabbi, Alaa S.; Saini, G.S.S. [Centre of Advanced Study in Physics, Department of Physics, Panjab University, Chandigarh 160014 (India); Tripathi, S.K., E-mail: surya@pu.ac.in [Centre of Advanced Study in Physics, Department of Physics, Panjab University, Chandigarh 160014 (India)

    2012-06-15

    Highlights: ► nc-CdSe thin films are prepared by thermal vacuum evaporation technique. ► TEM analysis shows NCs are spherical in shape. ► XRD reveals the hexagonal (wurtzite) crystal structure of nc-CdSe thin films. ► The direct optical bandgap of nc-CdSe is 2.25 eV in contrast to bulk (1.7 eV). ► Dispersion of refractive index is discussed in terms of Wemple–DiDomenico single oscillator model. -- Abstract: The nanocrystalline thin films of CdSe are prepared by thermal evaporation technique at room temperature. These thin films are characterized by transmission electron microscopy (TEM), scanning electron microscopy (SEM), energy dispersive X-ray analysis (EDX), X-ray diffraction (XRD) and photoluminescence spectroscopy (PL). The transmission spectra are recorded in the transmission range 400–3300 nm for nc-CdSe thin films. Transmittance measurements are used to calculate the refractive index (n) and absorption coefficient (α) using Swanepoel's method. The optical band gap (E{sub g}{sup opt}) has been determined from the absorption coefficient values using Tauc's procedure. The optical constants such as extinction coefficient (k), real (ε{sub 1}) and imaginary (ε{sub 2}) dielectric constants, dielectric loss (tan δ), optical conductivity (σ{sub opt}), Urbach energy (E{sub u}) and steepness parameter (σ) are also calculated for nc-CdSe thin films. The normal dispersion of refractive index is described using Wemple–DiDomenico single-oscillator model. Refractive index dispersion is further analysed to calculate lattice dielectric constant (ε{sub L}).

  17. Structural, optical and photo-catalytic activity of nanocrystalline NiO thin films

    Energy Technology Data Exchange (ETDEWEB)

    Al-Ghamdi, Attieh A. [Center of Nanotechnology, King Abdulaziz University, Jeddah (Saudi Arabia); Abdel-wahab, M. Sh., E-mail: mshabaan90@yahoo.com [Center of Nanotechnology, King Abdulaziz University, Jeddah (Saudi Arabia); Materials Science and Nanotechnology Department, Faculty of Postgraduate Studies for Advanced Sciences, Beni-Suef University, Beni-Suef (Egypt); Farghali, A.A. [Materials Science and Nanotechnology Department, Faculty of Postgraduate Studies for Advanced Sciences, Beni-Suef University, Beni-Suef (Egypt); Chemistry Department, Faculty of Science, Beni-Suef University, Beni-Suef (Egypt); Hasan, P.M.Z. [Center of Nanotechnology, King Abdulaziz University, Jeddah (Saudi Arabia)

    2016-03-15

    Highlights: • Synthesis of nanocrystalline NiO thin films with different thicknesses using DC magnetron sputtering technique. • Effect of film thickness and particle size on photo-catalytic degradation of methyl green dye under UV light was studied. • The deposited NiO thin films are efficient, stable and possess high photo-catalytic activity upon reuse. - Abstract: Physical deposition of nanocrystalline nickel oxide (NiO) thin films with different thickness 30, 50 and 80 nm have been done on glass substrate by DC magnetron sputtering technique and varying the deposition time from 600, 900 to 1200 s. The results of surface morphology and optical characterization of these films obtained using different characterization techniques such as X-ray diffraction (XRD), field emission scanning electron microscope (FESEM), photoluminescence (PL) and UV–vis spectrophotometry provide important information like formation of distinct nanostructures in different films and its effect on their optical band gap which has decreased from 3.74 to 3.37 eV as the film thickness increases. Most importantly these films have shown very high stability and a specialty to be recycled without much loss of their photo-catalytic activity, when tested as photo-catalysts for the degradation of methyl green dye (MG) from the wastewater under the exposure of 18 W energy of UV lamp.

  18. Dip coated nickel zinc oxide thin films: Structural, optical and magnetic investigations

    Science.gov (United States)

    Kayani, Zohra Nazir; Kiran, Faiza; Riaz, Saira; Zia, Rehana; Naseem, Shahzad

    2015-01-01

    Dip-coating technique was used to deposit NiZnO thin films on glass substrates at varying withdrawal speed in the range of 150-350 mm/s and annealed at 500 °C for 4 h. X-ray diffraction (XRD) results showed that the deposited NiZnO thin films have a pure wurtzite structure without any significant change in the structure caused by substituting Zn ion with Ni ion. Crystallite size increased from 248 to 497 nm with increase in withdrawal speed. Vibrating Sample magnetometer (VSM) results indicated that NiZnO thin films exhibit ferromagnetic properties. Increase in saturation magnetization with increase in withdrawal speed is observed. Evaluated optical band gap of the films reduced from 3.18 eV to 2.50 eV with the increase in withdrawal speed of the substrate.

  19. Optical Properties of Semiconductor-Metal Composite Thin Films in the Infrared Region

    Science.gov (United States)

    Nagendra, C. L.; Lamb, James L.

    1993-01-01

    Germanium:Silver (Ge:Ag) composite thin films having different concentrations of Ag, ranging from 7% to 40% have been prepared by dc co-sputtering of Ge an Ag and the films' surface morphology and optical properties have been characterized using transmission electron microscopy (TEM) and infrared spectrophotometry. It is seen that while the films containing lower concentrations of Ag have island-like morphology (i.e. Ag particles distributed in a Ge matrix), the higher metallic concentration films tend to have symmetric distribution of Ag and Ge.

  20. DETERMINING OPTICAL CONSTANTS OF SELENIUM THIN FILMS USING THE ENVELOPE METHOD

    Directory of Open Access Journals (Sweden)

    Nehad M. Tashtoush

    2013-01-01

    Full Text Available Two Selenium thin films were deposited on glass substrates using thermal evaporation technique. The optical constants (refractive index, absorption coefficient and extinction coefficient and energy gap were calculated using the Transmittance (T spectrums of the films in the spectral range of 500-900 nm. The envelope method was used to determine optical constants. The calculated refractive index was found to be in the range of 2.60 to 2.85 and the Energy gap (Eg was found to be 1.8 eV which are in agreement with other studies made using other procedures. The films were found to be amorphous according to the results obtained by XRD technique. This method can be used to have a good results for many tranparent thin films with more mathematical tools.

  1. Formation of quasiperiodic bimetal thin films with controlled optical and electrical properties

    Science.gov (United States)

    Arakelian, S.; Vartanyan, T.; Istratov, A.; Kutrovskaya, S.; Kucherik, A.; Itina, T.; Osipov, A.

    2016-04-01

    Synthesis of transparent conductive coatings is a promising direction of modern nanotechnological research. Thin nanostructured noble-metallic films demonstrate nonlinear optical effects in visible spectral range because of their plasmonic properties [1]. In addition, optical characteristics of these thin films strongly depend on the period of the formed surface structures [2]. If the distance between deposited particles almost equals their sizes, the optical properties of the randomly deposited structures may considerably differ from these for periodical structures [3]. In this work, we have studied the degree of the morphology influence (particle diameter in the colloid, the distance between the deposited particles, the number of layers etc.) on the optical and electrical properties of the deposited thin film of bimetallic gold and silver clusters. In this work we used CW-laser with moderate intensity in liquid (water or ethanol) for synthesis nanoparticles of noble metals. For the formation of quasi-periodically arranged clusters, particle deposition from the colloidal systems is used. The optical properties of the deposited bimetallic films are shown to change as a function of composition and geometry in agreement with the modeling of the optical properties.

  2. Effect of In-doping on the Optical Constants of ZnO Thin Films

    Science.gov (United States)

    Xie, G. C.; Fanga, L.; Peng, L. P.; Liu, G. B.; Ruan, H. B.; Wu, F.; Kong, C. Y.

    Highly transparent and conductive Indium-doped ZnO (ZnO:In) thin films with different In content were deposited on quartz glass slides by RF magnetron sputtering at room temperature. The thickness and the optical constants of the films were obtained by the Swanepoel method, and the effects of In concentration on the optical constants were investigated. Calculated results show that both the refractive index and optical band gap first increase then decreases with In concentration increasing in the visible region, and the variation of both ɛr and ɛi with wavelength follows the same trend as that of refractive index and extinction coefficient, respectively.

  3. Growth,Structural and Optical Characterization of Se75Te17Ge8 Thin Films

    Institute of Scientific and Technical Information of China (English)

    SALIM; S; M; LAHMAR; A; ZAYIED; H; SALEM; A; M; SAKR; G; B; BARROY; P; TELEB; N; EL; MARSSI; M

    2015-01-01

    Se75Te17Ge8 thin film was processed on glass substrates by a pulsed laser deposition technique. The ceramic target used for the deposition was prepared by a solid state sintering method in a vacuum sealed silica tube. The structural characterization was investigated by X-ray diffraction coupled with energy-dispersive X-ray spectrometry. The optical parameters were determined from the transmittance and reflectance spectra of the prepared film. The Wemple and Di Domenico models both were appropriate to describe the experimental results. The optical absorption coefficient was analyzed to identify the type of the optical transition and determine the corresponding energy values.

  4. Growth, Structural and Optical Characterization of Se75Te17Ge8 Thin Films

    Institute of Scientific and Technical Information of China (English)

    SALIM S M; LAHMAR A; ZAYIED H; SALEM A M; SAKR G B; BARROY P; TELEB N; EL MARSSI M

    2015-01-01

    Se75Te17Ge8 thin film was processed on glass substrates by a pulsed laser deposition technique. The ceramic target used for the deposition was prepared by a solid state sintering method in a vacuum sealed silica tube. The struc-tural characterization was investigated by X-ray diffraction coupled with energy-dispersive X-ray spectrometry. The op-tical parameters were determined from the transmittance and reflectance spectra of the prepared film. The Wemple and DiDomenico models both were appropriate to describe the experimental results. The optical absorption coefficient was analyzed to identify the type of the optical transition and determine the corresponding energy values.

  5. Optical modulator based on propagating surface plasmon coupled fluorescent thin film: proof-of-concept studies

    Science.gov (United States)

    Cao, Shuo-Hui; Wang, Zheng-Chuang; Weng, Yu-Hua; Xie, Kai-Xin; Chen, Min; Zhai, Yan-Yun; Li, Yao-Qun

    2017-06-01

    We demonstrate that the propagating surface plasmon coupled fluorescent thin film can be utilized as a fluorescence modulator to mimic multiple representative Boolean logic operations. Surface plasmon mediated fluorescence presents characteristic properties including directional and polarized emission, which hold the feasibility in creating a universal optical modulator. In this work, through constructing the thin layer with the specific thickness, surface plasmon mediated fluorescence can be modulated with an ON-OFF ratio by more than 5-fold, under a series of coupling configurations.

  6. Optical bandgap modeling of thermal annealed ZnO:Ga thin films using neural networks

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Chang Eun; Moon, Pyung; Yun, Ilgu [School of Electrical and Electronic Engineering, Yonsei University, 262 Seongsanno, Seodaemoon-gu, Seoul 120-749 (Korea); Kim, Sungyeon; Myoung, Jae-Min [Department of Materials Science and Engineering, Yonsei University, 262 Seongsanno, Seodaemoon-gu, Seoul 120-749 (Korea); Jang, Hyeon Woo; Bang, Jungsik [LG Chem, Ltd., Research Park, 104-1 Moonji-Dong, Yuseng-Gu, Daejeon 305-380 (Korea)

    2010-07-15

    In this paper, the thermal annealing process modeling for the optical bandgap of ZnO:Ga thin films for transparent conductive oxide was presented using neural network (NNets) based on error backpropagation (BPNN) algorithm and multilayer perceptron (MLP). The thermal annealing process of ZnO:Ga thin films were analyzed by general factorial experimental design. The annealing temperature and film thickness were considered as input factors. To model the nonlinear annealing process, 6 experiments were trained by BPNN which has 2-4-1 structures and 2 additional samples were experimented to verify the predicted models. The output response model on optical bandgap and carrier concentration of ZnO:Ga thin films trained by BPNN was represented by surface plot of response surface model. Based on the modeling results, NNets can provide sufficient correspondence between the predicted output values and the measured. The optical bandgap variation of ZnO:Ga thin films by annealing is due to increased carrier concentration and explained by Burstein-Moss effect. The thermal annealing process is nonlinear and complex but the output response can be predicted by the NNets model. (Abstract Copyright [2010], Wiley Periodicals, Inc.)

  7. Metal-insulator transition in epitaxial NdNiO3 thin film: A structural, electrical and optical study

    Science.gov (United States)

    Shao, Tao; Qi, Zeming; Wang, Yuyin; Li, Yuanyuan; Yang, Mei; Hu, Chuansheng

    2017-03-01

    NdNiO3 thin film has been prepared by pulsed laser deposition on LaAlO3 (001) single crystalline substrate. Temperature-dependent resistivity measurement shows a sharp metal-insulator transition in such thin film. The phase transition temperature can be tuned from 90 K to 121 K by changing the thickness of thin film. The structure evolution during phase transition is studied by Raman spectroscopy. Optical conductivity reveals that the variation carrier density in the process of phase transition. The results of structural, electrical and optical studies provide useful insights to understand the mechanism of metal-insulator transition of NdNiO3 thin film.

  8. Nonlinear Optical Properties of Indium Phthalocyanine Axially Grafted Polystyrene Thin Film

    Institute of Scientific and Technical Information of China (English)

    ZHU Rong-Yi; QIU Xue-Qiong; CHEN Yu; QIAN Shi-Xiong

    2006-01-01

    @@ Ultrafast dynamics and third-order nonlinearity of thin films of tert-butyl peripherally-substituted indium ph thalocyanine axially grafted polystyrene (tBu4PcIn-PS) are investigated by femtosecond optical-Kerr-effect (OKE) and z-scan experiments. The fastest component (< 200 fs) in the OKE traces of the film is related to the electron cloud distortion, where the phthalocyanine-polymer interaction may enhance this contribution.

  9. Multimode distributed feedback laser emission in a dye-doped optically pumped polymer thin-film

    Science.gov (United States)

    Sobel, F.; Gindre, D.; Nunzi, J.-M.; Denis, C.; Dumarcher, V.; Fiorini-Debuisschert, C.; Kretsch, K. P.; Rocha, L.

    2004-11-01

    We report on particular features of thin film distributed feedback (DFB) lasers. Devices are optically pumped using a Lloyd-mirror interferometer. For a given DFB grating period, the number of lasing modes is film thickness dependent. Spectral content of the devices is analysed using planar waveguide theory. An excellent agreement between the theoretical transverse electric mode structure and the laser emission spectrum is found.

  10. Optical properties of organic semiconductor thin films. Static spectra and real-time growth studies

    Energy Technology Data Exchange (ETDEWEB)

    Heinemeyer, Ute

    2009-07-20

    The aim of this work was to establish the anisotropic dielectric function of organic thin films on silicon covered with native oxide and to study their optical properties during film growth. While the work focuses mainly on the optical properties of Diindenoperylene (DIP) films, also the optical response of Pentacene (PEN) films during growth is studied for comparison. Spectroscopic ellipsometry and differential reflectance spectroscopy are used to determine the dielectric function of the films ex-situ and in-situ, i.e. in air and in ultrahigh vacuum. Additionally, Raman- and fluorescence spectroscopy is utilized to characterize the DIP films serving also as a basis for spatially resolved optical measurements beyond the diffraction limit. Furthermore, X-ray reflectometry and atomic force microscopy are used to determine important structural and morphological film properties. The absorption spectrum of DIP in solution serves as a monomer reference. The observed vibronic progression of the HOMO-LUMO transition allows the determination of the Huang-Rhys parameter experimentally, which is a measure of the electronic vibrational coupling. The corresponding breathing modes are measured by Raman spectroscopy. The optical properties of DIP films on native oxide show significant differences compared to the monomer spectrum due to intermolecular interactions. First of all, the thin film spectra are highly anisotropic due to the structural order of the films. Furthermore the Frenkel exciton transfer is studied and the energy difference between Frenkel and charge transfer excitons is determined. Real-time measurements reveal optical differences between interfacial or surface molecules and bulk molecules that play an important role for device applications. They are not only performed for DIP films but also for PEN films. While for DIP films on glass the appearance of a new mode is visible, the spectra of PEN show a pronounced energy red-shift during growth. It is shown how the

  11. Large Optical Nonlinearity of Surface Plasmon Modes on Thin Gold Films

    DEFF Research Database (Denmark)

    Huck, Alexander; Witthaut, Dirk; Kumar, Shailesh

    2013-01-01

    We investigate the optical nonlinear effects of a long-range surface plasmon polariton mode propagating on a thin gold film. These effects may play a key role in the design of future nanophotonic circuits as they allow for the realization of active plasmonic elements. We demonstrate a significant...

  12. Optical anisotropy, molecular orientations, and internal stresses in thin sulfonated poly(ether ether ketone) films

    NARCIS (Netherlands)

    Koziara, Beata; Nijmeijer, Dorothea C.; Benes, Nieck Edwin

    2015-01-01

    The thickness, the refractive index, and the optical anisotropy of thin sulfonated poly(ether ether ketone) films, prepared by spin-coating or solvent deposition, have been investigated with spectroscopic ellipsometry. For not too high polymer concentrations (B5 wt%) and not too low spin speeds

  13. Optical anisotropy, molecular orientations, and internal stresses in thin sulfonated poly(ether ether ketone) films

    NARCIS (Netherlands)

    Koziara, B.T.; Nijmeijer, D.C.; Benes, N.E.

    2015-01-01

    The thickness, the refractive index, and the optical anisotropy of thin sulfonated poly(ether ether ketone) films, prepared by spin-coating or solvent deposition, have been investigated with spectroscopic ellipsometry. For not too high polymer concentrations (B5 wt%) and not too low spin speeds (C20

  14. Optimization of Ta2O5 optical thin film deposited by radio frequency magnetron sputtering.

    Science.gov (United States)

    Shakoury, R; Willey, Ronald R

    2016-07-10

    Radio frequency magnetron sputtering has been used here to find the parameters at which to deposit Ta2O5 optical thin films with negligible absorption in the visible spectrum. The design of experiment methodology was employed to minimize the number of experiments needed to find the optimal results. Two independent approaches were used to determine the index of refraction n and k values.

  15. Ultrafast terahertz conductivity and transient optical absorption spectroscopy of silicon nanocrystal thin films

    DEFF Research Database (Denmark)

    Titova, Lyubov V.; Harthy, Rahma Al; Cooke, David

    We use time-resolved THz spectroscopy and transient optical absorption spectroscopy as two complementary techniques to study ultrafast carrier dynamics in silicon nanocrystal thin films. We find that the photoconductive dynamics in these materials is dominated by interface trapping, and we observe...... several different relaxation mechanisms for photoexcited carriers...

  16. The use of thin diamond films in fiber-optic low-coherence interferometers

    Science.gov (United States)

    Milewska, D.; Karpienko, K.

    2016-01-01

    In this paper we present the use of thin diamond films in fiber-optic low-coherence interferometers. Two kinds of diamond surfaces were used: undoped diamond film and boron- doped diamond film. They were deposited on glass plates as well as silicon layers. A conventionally used mirror was used as a reference layer. Diamond films were deposited using Microwave Plasma Enhanced Chemical Vapour Deposition (μPE CVD) system. Measurements were performed using two superluminescent diodes (SLD) with wavelengths of 1300 mm and 1550 mm. The optimal conditions for each layers were examined: the required wavelength of the light source and the length of Fabry-Perot interferometer cavity. Metrological parameters of Fabry-Perot interferometer with different mirrors were compared. The presented thin diamond films may be an interesting alternative to the commonly used reflective surfaces.

  17. Fabrication of Au/graphene oxide/Ag sandwich structure thin film and its tunable energetics and tailorable optical properties

    Directory of Open Access Journals (Sweden)

    Ruijin Hong

    2017-01-01

    Full Text Available Au/graphene oxide/Ag sandwich structure thin film was fabricated. The effects of graphene oxide (GO and bimetal on the structure and optical properties of metal silver films were investigated by X-ray diffraction (XRD, optical absorption, and Raman intensity measurements, respectively. Compared to silver thin film, Au/graphene oxide/Ag sandwich structure composite thin films were observed with wider optical absorption peak and enhanced absorption intensity. The Raman signal for Rhodamine B molecules based on the Au/graphene oxide/Ag sandwich nanostructure substrate were obviously enhanced due to the bimetal layer and GO layer with tunable absorption intensity and fluorescence quenching effects.

  18. Studies on the Optical Properties and Surface Morphology of Cobalt Phthalocyanine Thin Films

    Directory of Open Access Journals (Sweden)

    Benny Joseph

    2008-01-01

    Full Text Available Thin films of Cobalt Phthalocyanine (CoPc are fabricated at a base pressure of 10-5 m.bar using Hind-Hivac thermal evaporation plant. The films are deposited on to glass substrates at various temperatures 318, 363, 408 and 458K. The optical absorption spectra of these thin films are measured. The present studies reveal that the optical band gap energies of CoPc thin films are almost same on substrate temperature variation. The structure and surface morphology of the films deposited on glass substrates of temperatures 303, 363 and 458K are studied using X-ray diffractograms and Scanning Electron Micrographs (SEM, which show that there is a change in the crystallinity and surface morphology due to change in the substrate temperatures. Full width at half maximum (FWHM intensity of the diffraction peaks is also found reduced with increasing substrate temperatures. Scanning electron micrographs show that these crystals are needle like, which are interconnected at high substrate temperatures. The optical band gap energy is almost same on substrate temperature variation. Trap energy levels are also observed for these films.

  19. Studies on the Optical Properties and Surface Morphology of Nickel Phthalocyanine Thin Films

    Directory of Open Access Journals (Sweden)

    Benny Joseph

    2007-01-01

    Full Text Available Thin films of Nickel Phthalocyanine (NiPc are fabricated at a base pressure of 10-5 m.bar using Hind-Hivac thermal evaporation plant. The films are deposited on to glass substrates at various temperatures 318, 363, 408 and 458K. The optical absorption spectra of these thin films are measured. Present studies reveal that the optical band gap energies of NiPc thin films are highly dependent on the substrate temperatures. The structure and surface morphology of the films deposited on glass substrates of temperatures 303, 363 and 458K are studied using X-ray diffractograms and Scanning Electron Micrographs (SEM, show that there is a change in the crystallinity and surface morphology due to change in the substrate temperatures. Full width at half maximum (FWHM intensity of the diffraction peaks is also found reduced with increasing substrate temperatures. Scanning electron micrographs show that these crystals are fiber like at high substrate temperatures. The optical band gap increases with increase in substrate temperature and is then reduced with fiber-like grains at 408K. The band gap increases again at 458K with full of fiber like grains. Trap energy levels are also observed for these films.

  20. Structural and optical properties of electrohydrodynamically atomized TiO{sub 2} nanostructured thin films

    Energy Technology Data Exchange (ETDEWEB)

    Choi, Kyung-Hyun; Duraisamy, Navaneethan; Muhammad, Nauman Malik [Jeju National University, School of Mechatronics Engineering, Jeju (Korea, Republic of); Kim, Inyoung; Jo, Jeongdai [Korea Institute of Machinery and Materials (KIMM), Printed Electronics Research Center, Daejeon (Korea, Republic of); Choi, Hyunseok [Korea Institute of Industrial Technology (KITECH), Cheonan, Chungcheongnam-do (Korea, Republic of)

    2012-06-15

    In this paper, we report an alternate technique for the deposition of nanostructured TiO{sub 2} thin films using the electrohydrodynamic atomization (EHDA) technique using polyvinylpyrrolidone (PVP) as a stabilizer. The required parameters for achieving uniform TiO{sub 2} films using EHDA are also discussed in detail. X-ray diffraction results confirm that the TiO{sub 2} films were oriented in the anatase phase. Scanning electron microscope studies revealed the uniform deposition of the TiO{sub 2}. The purity of the films is characterized by using Fourier transform infrared (FTIR) spectroscopy and X-ray photoelectron spectroscopy (XPS), confirming the presence of Ti-O bonding in the films without any organic residue. The optical properties of the TiO{sub 2} films were measured by UV-visible spectroscopy, which shows that the transparency of the films is nearly 85% in the visible region. The current-voltage (I-V) curve of the TiO{sub 2} thin films shows a nearly linear behavior with 45 m{omega} cm of electrical resistivity. These results suggest that TiO{sub 2} thin films deposited via the EHDA method possess promising applications in optoelectronic devices. (orig.)

  1. X-ray analysis and optical properties of nickel oxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Shaaban, E.R., E-mail: esam_ramadan2008@yahoo.com [Physics Department, Faculty of Science, Al-Azhar University, PO 71452, Assiut (Egypt); Kaid, M.A.; Ali, M.G.S. [Physics Department, Faculty of Science, El-Minia University, El-Minia (Egypt)

    2014-11-15

    Highlights: • A fine NiO powders were prepared by a homogeneous precipitation method. • The microstructure and surface morphology of NiO powder were characterized. • The optical constants and film thicknesses of NiO thin films were obtained by SE. • The change in optical constants and energy gap were interpreted using microstructure parameters. - Abstract: Nanoparticles of NiO were prepared by a homogeneous precipitation method with an aqueous solution of nickel nitrate hexahydrate and citric acid. The microstructure and surface morphology of NiO powder were characterized by thermogravimetric (TGA) analysis, differential scanning calorimeter (DSC), X-ray diffraction (XRD), and infrared (IR) spectroscopy. Different thicknesses of nickel oxide (NiO) thin films were deposited onto highly cleaned glass substrates by the electron beam technique. Their structural characteristics were studied by X-ray diffraction (XRD) and scan electron microscope (SEM). The XRD investigation shows that NiO films are polycrystalline with an cubic type structure. The microstructure parameters, e.g., crystallite size and microstrain were calculated. The optical constants (n, k) and film thicknesses of NiO thin films were obtained by fitting the ellipsometric parameters (ψ and Δ) data using three layer model systems in the wavelength range 300–1100 nm. It is found that the refractive index, n increases with the increase of the film thickness. The possible optical transition in these films is found to be allowed direct transitions. The direct energy gaps increase with increasing of the film thickness.

  2. Sputter deposition of PZT piezoelectric films on thin glass substrates for adjustable x-ray optics.

    Science.gov (United States)

    Wilke, Rudeger H T; Johnson-Wilke, Raegan L; Cotroneo, Vincenzo; Davis, William N; Reid, Paul B; Schwartz, Daniel A; Trolier-McKinstry, Susan

    2013-05-10

    Piezoelectric PbZr(0.52)Ti(0.48)O(3) (PZT) thin films deposited on thin glass substrates have been proposed for adjustable optics in future x-ray telescopes. The light weight of these x-ray optics enables large collecting areas, while the capability to correct mirror figure errors with the PZT thin film will allow much higher imaging resolution than possible with conventional lightweight optics. However, the low strain temperature and flexible nature of the thin glass complicate the use of chemical-solution deposition due to warping of the substrate at typical crystallization temperatures for the PZT. RF magnetron sputtering enabled preparation of PZT films with thicknesses up to 3 μm on Schott D263 glass substrates with much less deformation. X-ray diffraction analysis indicated that the films crystallized with the perovskite phase and showed no indication of secondary phases. Films with 1 cm(2) electrodes exhibited relative permittivity values near 1100 and loss tangents below 0.05. In addition, the remanent polarization was 26 μC/cm(2) with coercive fields of 33 kV/cm. The transverse piezoelectric coefficient was as high as -6.1±0.6 C/m(2). To assess influence functions for the x-ray optics application, the piezoelectrically induced deflection of individual cells was measured and compared with finite-element-analysis calculations. The good agreement between the results suggests that actuation of PZT thin films can control mirror figure errors to a precision of about 5 nm, allowing sub-arcsecond imaging.

  3. Effect of thermal annealing on structural and optical properties of In2S3 thin films

    Science.gov (United States)

    Choudhary, Sonu

    2015-08-01

    There is a highly need of an alternate of toxic materials CdS for solar cell applications and indium sulfide is found the most suitable candidate to replace CdS due to its non-toxic and environmental friendly nature. In this paper, the effect of thermal annealing on the structural and optical properties of indium sulfide (In2S3) thin films is undertaken. The indium sulfide thin films of 121 nm were deposited on glass substrates employing thermal evaporation method. The films were subjected to the X-ray diffractometer and UV-Vis spectrophotometer respectively for structural and optical analysis. The XRD pattern show that the as-deposited thin film was amorphous in nature and crystallinity is found to be varied with annealing temperature. The optical analysis reveals that the optical band gap is varied with annealing. The optical parameters like absorption coefficient, extinction coefficient and refractive index were calculated. The results are in good agreement with available literature.

  4. The effect of FeCl{sub 3} on the optical constants and optical band gap of MBZMA-co-MMA polymer thin films

    Energy Technology Data Exchange (ETDEWEB)

    Yakuphanoglu, F. [Department of Physics, Faculty of Arts and Sciences, Firat University, 23169 Elazig (Turkey)]. E-mail: fyhan@hotmail.com; Barim, G. [Department of Chemistry, Faculty of Arts and Sciences, Firat University, 23169 Elazig (Turkey); Erol, I. [Department of Chemistry, Faculty of Arts and Sciences, Afyon Kocatepe University, Afyon (Turkey)

    2007-03-15

    The effects of the FeCl{sub 3} dopant on the optical constants and optical band gap of the methylbenzyl methacrylate (MBZMA)-co-methyl-methacrylate (MMA) polymer thin films have been investigated by the optical characterization. The optical constants of the thin films are changed with FeCl{sub 3} dopant. The refractive index dispersion curves of the thin films are fitted by Cauchy-Sellmeier model and dispersion parameters (a {sub 1} and n {sub 0}) change with FeCl{sub 3} dopant. The magnitude of the refractive index increases with increasing FeCl{sub 3} dopant. The electric susceptibility of the thin film materials was calculated and the electric susceptibility increases with FeCl{sub 3} content. The optical band gap values of the thin films were determined. The obtained band gap values are decreased with FeCl{sub 3} dopant. The FeCl{sub 3} dopant changes the width of localized states in the optical band gaps of the thin films. The optical band E {sub g} of the thin films changes from 3.52 to 3.05 eV with increasing FeCl{sub 3} dopant, while the width of localized states in optical band gap changes from 1101.47 to 596.3 meV. It is concluded that the optical constants and optical band gap of the MBZMA-co-MMA polymer thin films change by the FeCl{sub 3} dopant.

  5. Optical and Electrochromic Properties of E-Beam Evaporated Nickel Oxide Thin Film

    Directory of Open Access Journals (Sweden)

    K.J. Patel

    2011-01-01

    Full Text Available Nickel oxide (NiO thin films were deposited by e-beam evaporation on glass and ITO coated glass substrates initially held at room temperature without post-heat treatments. The structural and optical properties were investigated using glancing incident X-ray diffractometer (GIXRD and spectrophotometer. The electrochromic (EC behavior of NiO thin film was investigated using electrochemical technique viz. cyclic voltammetry, constant current measurement, and chronoamperometry in 1 M KOH electrolyte. The transmittance modulation and switching time with different operating voltage were also studied.

  6. Structural, optical and electronic properties of Fe doped ZnO thin films

    Science.gov (United States)

    Singh, Karmvir; Devi, Vanita; Dhar, Rakesh; Mohan, Devendra

    2015-09-01

    Fe doped ZnO thin films have been deposited by pulsed laser deposition technique on quartz substrate to study structural, optical and electronic structure using XRD, AFM, UV-visible and X-ray absorption spectroscopy. XRD study reveals that Fe doping has considerable effect on stress, strain, grain size and crystallinity of thin films. UV-visible study determines that band gap of pristine ZnO decreases with Fe doping, which can be directly correlated to transition tail width and grain size. Change in electronic structure with Fe doping has been examined by XAS study.

  7. Tailoring the dispersion behavior of optical nanowires with intercore-cladding lithium niobate thin film.

    Science.gov (United States)

    He, Hairong; Miao, Lili; Jiang, Guobao; Zhao, Chujun; Wen, Shuangchun

    2015-10-19

    The dispersion properties of silica and silicon subwavelength-diameter wires with intercore-cladding uniaxial dielectric lithium niobate thin film has been studied numerically in detail. The waveguide dispersion shifts centered around 1550-nm wavelength have been investigated. It shows that the dispersion of optical nanowires with intercore-cladding lithium niobate thin film is highly sensitive to fiber geometry. Moreover, with applied electric field, considerable dispersion shifts without changing its geometric structure can be obtained. Our work may provide an inroad for developing miniaturized functional optoelectronic devices.

  8. Magneto-optical and magnetic properties in a Co/Pd multilayered thin film

    Science.gov (United States)

    Nwokoye, Chidubem A.; Bennett, Lawrence H.; Della Torre, Edward; Ghahremani, Mohammadreza; Narducci, Frank A.

    2017-01-01

    The paper describes investigation of ferromagnetism at low temperatures. We explored the magneto-optical properties, influenced by photon-magnon interactions, of a ferromagnetic Co/Pd multilayered thin film below and above the magnon Bose-Einstein Condensation (BEC) temperature. Analyses of SQUID and MOKE low temperature experimental results reveal a noticeable phase transition in both magnetic and magneto-optical properties of the material at the BEC temperature.

  9. Structural and optical studies on antimony and zinc doped CuInS2 thin films

    Science.gov (United States)

    Ben Rabeh, M.; Chaglabou, N.; Kanzari, M.; Rezig, B.

    2009-11-01

    The influence of Zn and Sb impurities on the structural, optical and electrical properties of CuInS2 thin films on corning 7059 glass substrates was studied. Undoped and Zn or Sb doped CuInS2 thin films were deposited by thermal evaporation method and annealed in vacuum at temperature of 450 ∘C Undoped thin films were grown from CuInS2 powder using resistively heated tungsten boats. Zn species was evaporated from a thermal evaporator all together to the CuInS2 powder and Sb species was mixed in the starting powders. The amount of the Zn or Sb source was determined to be in the range 0-4 wt% molecular weight compared with the CuInS2 alloy source. The films were studied by means of X-ray diffraction (XRD), Optical reflection and transmission and resistance measurements. The films thicknesses were in the range 450-750 nm. All the Zn: CuInS2 and Sb: CuInS2 thin films have relatively high absorption coefficient between 104 cm-1 and 105 cm-1 in the visible and the near-IR spectral range. The bandgap energies are in the range of 1.472-1.589 eV for Zn: CuInS2 samples and 1.396-1.510 eV for the Sb: CuInS2 ones. The type of conductivity of these films was determined by the hot probe method. Furthermore, we found that Zn and Sb-doped CuInS2 thin films exhibit P type conductivity and we predict these species can be considered as suitable candidates for use as acceptor dopants to fabricate CuInS2-based solar cells.

  10. Engineering of electronic and optical properties of PbS thin films via Cu doping

    Science.gov (United States)

    Touati, Baligh; Gassoumi, Abdelaziz; Dobryden, Illia; Natile, Marta Maria; Vomiero, Alberto; Turki, Najoua Kamoun

    2016-09-01

    Copper-doped PbS polycrystalline thin films were deposited by chemical bath deposition by adding small amount of Cu (ysolution = [Cu2+]/[Pb2+]) between 0.5 and 2 at%. The composition, structure, morphology, optical and electrical properties of the films were investigated by means of X-ray diffraction (XRD), Rutherford backscattering spectrometry (RBS), atomic force microscopy (AFM), scanning electron microscopy (SEM), X-ray photoemission spectroscopy (XPS), UV-visible-near infrared (UV-Vis-NIR) spectrophotometry and Hall effect measurements. The XRD studies showed that the undoped films have PbS face centered cubic structure with (111) preferential orientation, while preferential orientation changes to (200) plane with increasing Cu doping concentration. The AFM and SEM measurements indicated that the film surfaces consisted of nanosized grains with pyramidal shape. Optical band gap was blue shifted from 0.72 eV to 1.69 eV with the increase in Cu doping concentration. The film obtained with the [Cu2+]/[Pb2+] ratio equal to 1.5 at% Cu showed the minimum resistivity of 0.16 Ω cm at room temperature and optimum value of optical band gap close to 1.5 eV. 1.5 at% Cu-doped PbS thin films exhibit the best optical and electrical properties, suitable for solar cells applications.

  11. Influence of {gamma}-irradiation on the optical properties of nanocrystalline tin phthalocyanine thin films

    Energy Technology Data Exchange (ETDEWEB)

    El-Nahass, M.M., E-mail: prof_nahhas@yahoo.com [Department of Physics, Faculty of Education, Ain Shams University, Roxy 11757, Cairo (Egypt); Atta, A.A.; El-Shazly, E.A.A. [Department of Physics, Faculty of Education, Ain Shams University, Roxy 11757, Cairo (Egypt); Faidah, A.S. [Department of Physics, Faculty of Science, King Abdul Aziz University, Jeddah 21589 (Saudi Arabia); Hendi, A.A. [Department of Physics, Girl' s College of Education, King Abdul Aziz University, Jeddah (Saudi Arabia)

    2009-10-15

    SnPc in powder and thin film forms were found to be polycrystalline with monoclinic lattice. The morphological and structural properties of the obtained SnPc films were characterized from electron scanning micrographs and X-ray diffraction patterns. In the {gamma}-irradiated film the formed agglomeration increased the crystallite size. The refractive index, n, and the absorption index, k, were obtained from spectrophotometric measurements of the transmittance and reflectance at normal incidence of light in the wavelength range 200-2500 nm. {gamma}-Irradiation films shifted the transmission edge toward lower wavelength and increase the optical energy gap value. According to the analysis of dispersion curves, the dielectric constants and dispersion parameters were obtained. The absorption analysis performed indicated indirect allowed electronic transitions and the optical energy band gap 2.84 and 2.63 eV for the as-deposited and the {gamma}-irradiated films, respectively.

  12. Optical studies of (AsSe){sub 100-x} Sb{sub x} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Petkova, T.; Ilcheva, V. [Bulgarian Academy of Sciences, Institute of Electrochemistry and Energy Systems, Sofia (Bulgaria); Petkov, E.; Petkov, P. [University of Chemical Technology and Metallurgy, Department of Physics, Sofia (Bulgaria); Socol, G.; Sima, F.; Ristoscu, C.; Mihailescu, C.N.; Mihailescu, I.N. [National Institute for Lasers, Plasma and Radiations Physics, Laser-Surface-Plasma Interactions Laboratory, PO Box MG-54, Bucharest-Magurele (Romania); Popov, C.; Reithmaier, J.P. [University of Kassel, Institute of Nanostructure Technologies and Analytics (INA), Kassel (Germany)

    2011-09-15

    Thin arsenic-selenium-antimony films (AsSe){sub 100-x} Sb{sub x} (x=0,5,10,15 mol.%) have been deposited on glass substrates by vacuum thermal evaporation (VTE) and pulsed laser deposition (PLD) techniques from the corresponding bulk glassy materials. The refractive index and the film thickness have been determined from the optical transmission spectra by modified Swanepoel method. The optical band gap calculated using the Tauc's approximation showed a narrowing as a function of the increased Sb content from 1.74 eV to 1.53 eV in the VTE films and from 1.64 eV to 1.42 eV in the PLD films. The refractive index of the Sb-doped films strongly increased with the Sb content and reached the largest value for the PLD films. The results verify that both techniques are suitable for deposition of thin glassy films with high optical quality. (orig.)

  13. OPTICAL BAND GAP AND CONDUCTIVITY MEASUREMENTS OF POLYPYRROLE-CHITOSAN COMPOSITE THIN FILMS

    Institute of Scientific and Technical Information of China (English)

    Mahnaz M.Abdi; H.N.M.Ekramul Mahmud; Luqman Chuah Abdullah; Anuar Kassim; Mohamad Zaki Ab.Rahman; Josephine Liew Ying Chyi

    2012-01-01

    Electrical conductivity and optical properties of polypyrrole-chitosan (PPy-CHI) conducting polymer composites have been investigated to determine the optical transition characteristics and energy band gap of composite films.The two electrode method and Ⅰ-Ⅴ characteristic technique were used to measure the conductivity of the PPy-CHI thin films,and the optical band gap was obtained from their ultraviolet absorption edges.Depending upon experimental parameter,the optical band gap (Eg) was found within 1.30-2.32 eV as estimated from optical absorption data.The band gap of the composite films decreased as the CHI content increased.The room temperature electrical conductivity of PPy-CHI thin films was found in the range of 5.84 × 10-7-15.25 × 10-7 S.cm-1 depending on the chitosan content.The thermogravimetry analysis (TGA)showed that the CHI can improve the thermal stability of PPy-CHI composite films.

  14. Optical absorbers based on strong interference in ultra-thin films

    CERN Document Server

    Kats, Mikhail A

    2016-01-01

    Optical absorbers find uses in a wide array of applications across the electromagnetic spectrum, including photovoltaic and photochemical cells, photodetectors, optical filters, stealth technology, and thermal light sources. Recent efforts have sought to reduce the footprint of optical absorbers, conventionally based on graded structures or Fabry-Perot-type cavities, by using the emerging concepts of plasmonics, metamaterials, and metasurfaces. Unfortunately, these new absorber designs require patterning on subwavelength length scales, and are therefore impractical for many large-scale optical and optoelectronic devices. In this article, we summarize recent progress in the development of optical absorbers based on lossy films with thicknesses significantly smaller than the incident optical wavelength. These structures have a small footprint and require no nanoscale patterning. We outline the theoretical foundation of these absorbers based on "ultra-thin-film interference", including the concepts of loss-induc...

  15. Influence of strain/stress on the nonlinear-optical properties of sprayed deposited ZnO:Al thin films

    Energy Technology Data Exchange (ETDEWEB)

    Bahedi, K., E-mail: bahedikhadija@yahoo.fr [Laboratoire Optoelectronique et Physico-chimie des Materiaux.Unite de recherche associe au CNRST-URAC-14. Universite Ibn Tofail, Faculte des Sciences BP 133 Kenitra 14000 (Morocco); Addou, M.; Jouad, M. El; Sofiani, Z. [Laboratoire Optoelectronique et Physico-chimie des Materiaux.Unite de recherche associe au CNRST-URAC-14. Universite Ibn Tofail, Faculte des Sciences BP 133 Kenitra 14000 (Morocco); Oauzzani, H. EL; Sahraoui, B. [Institute of Sciences and Molecular Technologies of Angers, MOLTECH Anjou - UMR CNRS 6200, 2 bd Lavoisier 49045 ANGERS cedex2 (France)

    2011-07-01

    Nanocrystalline ZnO:Al thin films were deposited by reactive chemical pulverization spray pyrolysis technique on heated glass substrates at 450 deg. C to study their crystalline structure, composition, strain, stress, roughness characteristics and nonlinear optical susceptibility as a function of Al concentration (0, 2, 3, 5 at.%). The films were characterized by X-ray diffractometer (XRD), EDAX 9100 analyser, atomic force microscopy (AFM) and third harmonic generation (THG). The Al (3 at.%) doped ZnO thin films exhibited the lower strain/stress than undoped films. The nonlinear properties of the ZnO:Al thin films have been found to be influenced by the films strain/stress.

  16. Structural, electrical, and optical properties of ZnInO alloy thin films

    Institute of Scientific and Technical Information of China (English)

    Cai Xi-Kun; Yuan Zi-Jian; Zhu Xia-Ming; Wang Xiong; Zhang Bing-Po; Qiu Dong-Jiang; Wu Hui-Zhen

    2011-01-01

    Indium zinc oxide (IZO) thin films with different percentages of In content (In/[In+Zn]) are synthesized on glass substrates by magnetron sputtering,and the structural,electrical and optical properties of IZO thin films deposited at different In2O3 target powers are investigated.IZO thin films grown at different In2O3 target sputtering powers show evident morphological variation and different grain sizes.As the In2O3 sputtering power rises,the grain size becomes larger and electrical mobility increases.The film grown with an In2O3 target power of 100 W displays the highest electrical mobility of 13.5 cm.V-1s-1 and the lowest resistivity of 2.4× 10-3 Ω·cm.The average optical transmittance of the IZO thin film in the visible region reaches 80% and the band gap broadens with the increase of In2O3 target power,which is attributed to the increase in carrier concentration and is in accordance with Burstein-Moss shift theory.

  17. Optical properties of organic thin films of 4-tricyanovinyl-{N}, {N}-diethylaniline

    Science.gov (United States)

    El-Nahass, M. M.; Abd-El-Rahman, K. F.; Darwish, A. A. A.

    2009-11-01

    Optical properties of 4-tricyanovinyl-N, N-diethylaniline thin films were investigated using spectrophotometric measurement of transmittance and reflectance at normal incidence of light in the wavelength range of 200-2500 nm. The optical constants (refractive index, n, and absorption index, k) were calculated using a computer program based on Murmann's exact equations. The calculated optical constants are independent of the film thickness and their values are decreased by annealing temperature. The optical dispersion parameters have been analysed by single oscillator model. The type of transition in as-deposited films is indirect allowed with a value of energy gap equals to 1.45 eV, which increased to 1.51 eV upon annealing. in here

  18. Structural, Optical and Electrical Properties of NiO Nanostructure Thin Film

    Directory of Open Access Journals (Sweden)

    M. Ghougali

    2016-12-01

    Full Text Available Nickel oxide was deposited on highly cleaned glass substrates using spray pneumatic technique. The effect of precursor molarity on structural, optical and electrical properties has been studied. The XRD lines of the deposited NiO were enhanced with increasing precursor molarity due to the improvement of the films crystallinity. It was shown that the crystalline size of the deposited thin films was calculated using Debye-Scherer formula and found in the range between 9 and 47 nm. The optical properties have been discussed in this work. The absorbance (A, the transmittance (T and the reflectance (R were measured and calculated. Band gap energy is considered one of the most important optical parameter, therefore measured and found ranging between 3.64 and 3.86 eV. The NiO thin film reduces the light reflection for visible range light. The increase of the electrical conductivity to maximum value of 0.0896 (Ω cm – 1 can be explained by the increase in carrier concentration of the films. A good electrical conductivity of the NiO thin film is obtained due to the electrically low sheet resistance. NiO can be applied in different electronic and optoelectronic applications due to its high band gap, high transparency and good electrical conductivity.

  19. Preparation, structural and optical characterization of nanocrystalline CdS thin film

    Science.gov (United States)

    Abdel-Galil, A.; Balboul, M. R.; Atta, A.; Yahia, I. S.; Sharaf, A.

    2014-08-01

    Nano-structured CdS thin film was deposited onto a glass substrate by an electron beam evaporation technique at room temperature from a powder prepared by a hydrothermal method. The morphology and structural properties of the as-deposited film were characterized using atomic force microscopy (AFM) and X-ray diffraction (XRD) techniques. The AFM morphology study confirms that the CdS thin film has nano-sized grains and a dense morphology. The mean particle size that resulted from XRD analyses was 8.4 nm. Also, the XRD patterns show that CdS powder and thin film have hexagonal wurtzite type structure with a preferred c-axis orientation along (002) plane. The refractive index and the film thickness were obtained using the Swanepoel method from transmission spectrum. The optical band gap was calculated from the absorption spectrum, and was found to be 2.41 eV corresponding to direct optical transition. The dispersion of the refractive index was explained using a single oscillator model. The dielectric relaxation time and the optical conductivity were determined and studied with photon energy.

  20. High-energy ion treatments of amorphous As40Se60 thin films for optical applications

    OpenAIRE

    Rashmi Chauhan; Arvind Tripathi; Krishna Kant Srivastava

    2014-01-01

    The treatment of 100 MeV Ag swift-heavy ion (SHI) irradiation with five different fluences (3×1010, 1×1011, 3×1011, 1×1012, and 3×1012 ions/cm2) was used to design optical and structural properties of amorphous (a-) As40Se60 chalcogenide thin films. Swanepoel method was applied on transmission measurements to determine the changes in optical bandgap, Tauc parameter and linear optical parameters, i.e., linear optical absorption, extinction coefficient and linear refractive index. Dispersion of...

  1. High-energy ion treatments of amorphous As40Se60 thin films for optical applications

    OpenAIRE

    Chauhan, Rashmi; Tripathi, Arvind; Srivastava, Krishna Kant

    2014-01-01

    The treatment of 100 MeV Ag swift-heavy ion (SHI) irradiation with five different fluences (3×1010, 1×1011, 3×1011, 1×1012, and 3×1012 ions/cm2) was used to design optical and structural properties of amorphous (a-) As40Se60 chalcogenide thin films. Swanepoel method was applied on transmission measurements to determine the changes in optical bandgap, Tauc parameter and linear optical parameters, i.e., linear optical absorption, extinction coefficient and linear refractive index. Dispersion of...

  2. Electronic excitation induced modifications of optical and morphological properties of PCBM thin films

    Energy Technology Data Exchange (ETDEWEB)

    Sharma, T. [Department of Physics and Materials Research Centre, Malaviya National Institute of Technology, Jaipur 302017 (India); Singhal, R., E-mail: rsinghal.phy@mnit.ac.in [Department of Physics and Materials Research Centre, Malaviya National Institute of Technology, Jaipur 302017 (India); Vishnoi, R. [Department of Physics and Materials Research Centre, Malaviya National Institute of Technology, Jaipur 302017 (India); Department of Physics, Vardhman (P.G.) College, Bijnor 246701, U.P. (India); Sharma, P. [Department of Physics and Materials Research Centre, Malaviya National Institute of Technology, Jaipur 302017 (India); Patra, A.; Chand, S. [National Physical Laboratory, Dr. K. S. Krishnan Marg, New Delhi 110012 (India); Lakshmi, G.B.V.S. [Inter University Accelerator Centre, Post Box No. 10502, New Delhi 110067 (India); Biswas, S.K. [Department of Metallurgical and Materials Engineering, Malaviya National Institute of Technology, Jaipur 302017 (India)

    2016-07-15

    Highlights: • Spin casted PCBM thin films are irradiated by 90 MeV Ni{sup 7+} ion beam. • The decrease in band gap was found after irradiation. • There is a decomposition of molecular bond due to ion irradiation. • Roughness is also found to be dependent on incident ion fluence. - Abstract: Phenyl C{sub 61} butyric acid methyl ester (PCBM) is a fullerene derivative and most commonly used in organic photovoltaic devices both as electron acceptor and transporting material due to high electron mobility. PCBM is easy to spin caste on some substrate as it is soluble in chlorobenzene. In this study, the spin coated thin films of PCBM (on two different substrate, glass and double sided silicon) were irradiated using 90 MeV Ni{sup 7+} swift heavy ion beam at low fluences ranging from 1 × 10{sup 9} to 1 × 10{sup 11} ions/cm{sup 2} to study the effect of ion beam irradiation. The pristine and irradiated PCBM thin films were characterized by UV–visible absorption spectroscopy and fourier transform infrared spectroscopy (FTIR) to investigate the optical properties before and after irradiation. These thin films were further analyzed using atomic force microscopy (AFM) to investigate the morphological modifications which are induced by energetic ions. The variation in optical band gap after irradiation was measured using Tauc’s relation from UV–visible absorption spectra. A considerable change was observed with increasing fluence in optical band gap of irradiated thin films of PCBM with respect to the pristine film. The decrease in FTIR band intensity of C{sub 60} cage reveals the polymerization reaction due to high energy ion impact. The roughness is also found to be dependent on incident fluences. This study throws light for the application of PCBM in organic solar cells in form of ion irradiation induced nanowires of PCBM for efficient charge carrier transportation in active layer.

  3. The effect of substrate temperature on the optical properties of polycrystalline Sb 2O 3 thin films

    Science.gov (United States)

    Tigau, N.; Ciupina, V.; Prodan, G.

    2005-04-01

    Polycrystalline antimony trioxide (Sb 2O 3) thin films with a thickness of 800 nm, deposited on glass substrates at different temperature ranges 300-573 K, were optically characterized. The optical parameters such as refractive index, n, absorption coefficient, α, and optical band gap, Eg, were determined using the transmission spectra recorded in the range of 300-1400 nm and simple calculations based on Swanepoel's method including interference effect induced by multiple internal reflections in the substrate/thin film system. The effect of substrate temperature on the optical properties of Sb 2O 3 thin films has been studied. It was found that both refractive index and absorption coefficient depend markedly on the substrate temperature. The optical band gap energies and the corresponding allowed direct transitions have been determined from the absorption spectra. The correlations between optical parameters and the change in structure of the Sb 2O 3 thin films are discussed.

  4. Effect of incident deposition angle on optical properties and surface roughness of TiO2 thin films

    Science.gov (United States)

    Pan, Yongqiang; Yang, Chen

    2016-10-01

    Optical properties, surface roughness and packing density of TiO2 thin films are studied by obliquely deposited on K9 glass by electron beam evaporation. The surface roughness of TiO2 thin films with different incident deposition angle is compared. The experimental results show that the transmittance increases and transmittance peak shifts to short wavelength with increasing incident deposition angle, the packing density of TiO2 thin films decrease from 0.80 to 0.34 with incident deposition angle increasing from 0° to 75°. The surface roughness of TiO2 thin films increase with increasing incident deposition angle. The surface roughness of TiO2 thin films is slightly bigger than the surface roughness of K9 substrate when the incident deposition angle is 75°. When the incident deposition angle is constant, TiO2 thin films surface roughness decrease with increase of film thickness.

  5. Dispersion-model-free determination of optical constants: application to materials for organic thin film devices.

    Science.gov (United States)

    Flämmich, Michael; Danz, Norbert; Michaelis, Dirk; Bräuer, Andreas; Gather, Malte C; Kremer, Jonas H-W M; Meerholz, Klaus

    2009-03-10

    We describe a method to determine the refractive index and extinction coefficient of thin film materials without prior knowledge of the film thickness and without the assumption of a dispersion model. A straightforward back calculation to the optical parameters can be performed starting from simple measurements of reflection and transmission spectra of a 100-250 nm thick supported film. The exact film thickness is found simultaneously by fulfilling the intrinsic demand of continuity of the refractive index as a function of wavelength. If both the layer and the substrate are homogeneous and isotropic media with plane and parallel interfaces, effects like surface roughness, scattering, or thickness inhomogeneities can be neglected. Then, the accuracy of the measurement is approximately 10(-2) and 10(-3) for the refractive index and the extinction coefficient, respectively. The error of the thin film thickness determination is well below 1 nm. Thus this technique is well suited to determine the input parameters for optical simulations of organic thin film devices, such as organic light-emitting diodes (OLEDs) or organic photovoltaic (OPV) cells. We apply the method to the electroluminescent polymer poly(2,5-dioctyl-p-phenylene vinylene) (PDO-PPV) and show its applicability by comparing the measured and calculated reflection and transmission spectra of OLED stacks with up to five layers.

  6. Structural and optical properties of electrodeposited ZnO thin films

    Energy Technology Data Exchange (ETDEWEB)

    Laurent, K. [Laboratoire de Physique des Materiaux Divises et Interfaces (LPMDI), CNRS-UMR 8108, Universite Paris-Est, 5 Bd. Descartes, 77454 Marne la Vallee Cedex 2 (France); Wang, B.Q.; Yu, D.P. [School of Physics, Electron Microscopy Laboratory, and State Key Laboratory for Mesoscopic Physics, Peking University, Beijing 100871 (China); Leprince-Wang, Y. [Laboratoire de Physique des Materiaux Divises et Interfaces (LPMDI), CNRS-UMR 8108, Universite Paris-Est, 5 Bd. Descartes, 77454 Marne la Vallee Cedex 2 (France)], E-mail: yamin.leprince@univ-mlv.fr

    2008-11-28

    Zinc oxide thin films were electrodeposited on different substrates. Electrodeposition was performed with hydrogen peroxide, as hydroxide ions source, at - 1.5 V versus mercurial sulfate electrode during one hour, and a temperature maintained at 70 deg. C . The resulting thin films have a good crystallinity and a high c-axis orientation, and the unit cell parameters determined by X-ray diffraction experiment are a = 0.326 nm and c = 0.523 nm, respectively. Microstructure studies using scanning electron microscopy and atomic force microscopy show a good homogeneity of the film and a roughness around 22 nm. Optical properties were studied with Raman spectroscopy and photoluminescence spectroscopy. Optical properties of the films revealed a low defect emission in photoluminescence spectra. The E{sub 2} vibration mode for ZnO was observed near 439 cm{sup -1}, indicating that the as-deposited films were under compressive stress. Oscillations were observed in the photoluminescence spectra, from which the refractive index of ZnO thin films was extracted, that is {approx} 1.90.

  7. Optical band gap of Sn0.2Bi1.8Te3 thin films

    Indian Academy of Sciences (India)

    P H Soni; M V Hathi; C F Desai

    2003-12-01

    Sn0.2Bi1.8Te3 thin films were grown using the thermal evaporation technique on a (001) face of NaCl crystal as a substrate at room temperature. The optical absorption was measured in the wave number range 500–4000 cm-1. From the optical absorption data the band gap was evaluated and studied as a function of film thickness and deposition temperature. The data indicate absorption through direct interband transition with a band gap of around 0.216 eV. The detailed results are reported here.

  8. Electrical and optical properties of CZTS thin films prepared by SILAR method

    OpenAIRE

    2016-01-01

    In the present work, Cu2ZnSnS4 (CZTS) thin film was deposited onto the glass substrate by simple and economic SILAR method and its structural, morphological, optical and electrical properties were analyzed. X-ray diffraction (XRD) analysis confirms the formation of CZTS with kesterite structure and the average crystallite size is found to be 142 nm. Scanning electron microscope (SEM) image shows that the film has homogeneous, agglomerated surface without any cracks. The prepared CZTS film sho...

  9. Structural and optical characteristics of SnS thin film prepared by SILAR

    Directory of Open Access Journals (Sweden)

    Mukherjee A.

    2015-12-01

    Full Text Available SnS thin films were grown on glass substrates by a simple route named successive ion layer adsorption and reaction (SILAR method. The films were prepared using tin chloride as tin (Sn source and ammonium sulfide as sulphur (S source. The structural, optical and morphological study was done using XRD, FESEM, FT-IR and UV-Vis spectrophotometer. XRD measurement confirmed the presence of orthorhombic phase. Particle size estimated from XRD was about 45 nm which fitted well with the FESEM measurement. The value of band gap was about 1.63 eV indicating that SnS can be used as an important material for thin film solar cells. The surface morphology showed a smooth, homogenous film over the substrate. Characteristic stretching vibration mode of SnS was observed in the absorption band of FT-IR spectrum. The electrical activation energy was about 0.306 eV.

  10. Structural, optical, and electrical properties of tin sulfide thin films grown by spray pyrolysis

    Energy Technology Data Exchange (ETDEWEB)

    Calixto-Rodriguez, M. [Instituto de Ciencias Fisicas-Universidad Nacional Autonoma de Mexico, Apartado Postal 48-3, 62210, Cuernavaca, Morelos (Mexico)], E-mail: manuela@fis.unam.mx; Martinez, H. [Instituto de Ciencias Fisicas-Universidad Nacional Autonoma de Mexico, Apartado Postal 48-3, 62210, Cuernavaca, Morelos (Mexico); Sanchez-Juarez, A.; Campos-Alvarez, J. [Centro de Investigacion en Energia-Universidad Nacional Autonoma de Mexico, 62580, Temixco, Morelos (Mexico); Tiburcio-Silver, A. [Instituto Tecnologico de Toluca-SEP, Apartado Postal 20, 52176, Metepec 3, Estado de Mexico (Mexico); Calixto, M.E. [Consultant, Cuernavaca, Morelos (Mexico)

    2009-02-02

    Tin sulfide (SnS) thin films have been prepared by spray pyrolysis (SP) technique using tin chloride and N, N-dimethylthiourea as precursor compounds. Thin films prepared at different temperatures have been characterized using several techniques. X-ray diffraction studies have shown that substrate temperature (T{sub s}) affects the crystalline structure of the deposited material as well as the optoelectronic properties. The calculated optical band gap (E{sub g}) value for films deposited at T{sub s} = 320-396 deg. C was 1.70 eV (SnS). Additional phases of SnS{sub 2} at 455 deg. C and SnO{sub 2} at 488 deg. C were formed. The measured electrical resistivity value for SnS films was {approx} 1 x 10{sup 4} {omega}-cm.

  11. Temperature influence on microstructure and optical properties of TiO2-Au thin films

    Science.gov (United States)

    Lahmar, A.; Benchaabane, A.; Aderdour, M.; Zeinert, A.; Es-Souni, M.

    2016-02-01

    TiO2-Au thin films were deposited on quartz substrate using sol-gel technique. The influence of the annealing temperature on microstructure and optical properties was examined. SEM micrographs showed a homogeneous distribution of Au nanoparticles when the annealing temperature is increased. X-ray diffraction and Raman spectroscopy allowed the identification of the anatase phase at 500 °C that persisted up to 800 °C. Optical spectra showed the presence of localized plasmon resonance as a result of the presence of Au nanoparticles; the loci of the absorption peaks were found to depend on the annealing temperature. The effective medium model was used to describe the spectrophotometric measurements. Numerical calculations permitted the determination of optical constants. The band gap E g of TiO2-Au thin films was found to decrease from 3.21 to 2.71 eV with increasing annealing temperature.

  12. Optical properties of amorphous and polycrystalline Sb2Se3 thin films prepared by thermal evaporation

    Science.gov (United States)

    Chen, Chao; Li, Weiqi; Zhou, Ying; Chen, Cheng; Luo, Miao; Liu, Xinsheng; Zeng, Kai; Yang, Bo; Zhang, Chuanwei; Han, Junbo; Tang, Jiang

    2015-07-01

    Sb2Se3 is a very promising photovoltaic material because of its attractive material, optical and electrical properties. Very recently, we reported a superstrate CdS/Sb2Se3 solar cell with 5.6% certified efficiency. In this letter, we focused on the optical properties of amorphous and polycrystalline Sb2Se3 thin films prepared by thermal evaporation. Using temperature dependent transmission spectrum and temperature dependent photoluminescence, the indirect optical transition nature and bandgap values as functions of temperature were acquired. Using ellipsometry measurements and Swanepoel's envelope method, the refractive indices as well as the dielectric constant in a wide wavelength range of 193-2615 nm were obtained. These works would lay the foundation for the further development of Sb2Se3 thin film solar cells.

  13. Nanostructured pyronin Y thin films as a new organic semiconductor: Linear/nonlinear optics, band gap and dielectric properties

    Energy Technology Data Exchange (ETDEWEB)

    Zahran, H.Y. [Metallurgical Lab.1, Nanoscience Laboratory for Environmental and Bio-medical Applications (NLEBA), Semiconductor Lab., Department of Physics, Faculty of Education, Ain Shams University, Roxy, 11757 Cairo (Egypt); Advanced Functional Materials & Optoelectronic Laboratory (AFMOL), Department of Physics, Faculty of Science, King Khalid University, P.O. Box 9004, Abha (Saudi Arabia); Yahia, I.S., E-mail: dr_isyahia@yahoo.com [Metallurgical Lab.1, Nanoscience Laboratory for Environmental and Bio-medical Applications (NLEBA), Semiconductor Lab., Department of Physics, Faculty of Education, Ain Shams University, Roxy, 11757 Cairo (Egypt); Advanced Functional Materials & Optoelectronic Laboratory (AFMOL), Department of Physics, Faculty of Science, King Khalid University, P.O. Box 9004, Abha (Saudi Arabia); Alamri, F.H. [Advanced Functional Materials & Optoelectronic Laboratory (AFMOL), Department of Physics, Faculty of Science, King Khalid University, P.O. Box 9004, Abha (Saudi Arabia)

    2017-05-15

    Pyronin Y dye (PY) is a kind of xanthene derivatives. Thin films of pyronin Y were deposited onto highly cleaned glass substrates using low-cost/spin coating technique. The structure properties of pyronin Y thin films with different thicknesses were investigated by using X-ray diffraction (XRD) and atomic force microscope (AFM). PY thin films for all the studied thicknesses have an amorphous structure supporting the short range order of the grain size. AFM supports the nanostructure with spherical/clusters morphologies of the investigated thin films. The optical constants of pyronin Y thin films for various thicknesses were studied by using UV–vis–NIR spectrophotometer in the wavelength range 350–2500 nm. The transmittance T(λ), reflectance R(λ) spectral and absorbance (abs(λ)) were obtained for all film thicknesses at room temperature and the normal light incident. These films showed a high transmittance in the wide scale wavelengths. For different thicknesses of the studied thin films, the optical band gaps were determined and their values around 2 eV. Real and imaginary dielectric constants, dissipation factor and the nonlinear optical parameters were calculated in the wavelengths to the range 300–2500 nm. The pyronin Y is a new organic semiconductor with a good optical absorption in UV–vis regions and it is suitable for nonlinear optical applications. - Highlights: • Pyronin Y (PY) nanostructured thin films were deposited by using spin coating technique. • XRD/AFM were used to study the structure of PY films. • The optical band gap was calculated on the basis of Tauc's model. • Linear/nonlinear optical parameters are calculated and interpreted via the applied optical theories. • PY thin films is a new organic semiconductor for its application in optoelectronic devices.

  14. In situ measurements of thin films in bovine serum lubricated contacts using optical interferometry.

    Science.gov (United States)

    Vrbka, Martin; Křupka, Ivan; Hartl, Martin; Návrat, Tomáš; Gallo, Jiří; Galandáková, Adéla

    2014-02-01

    The aim of this study is to consider the relevance of in situ measurements of bovine serum film thickness in the optical test device that could be related to the function of the artificial hip joint. It is mainly focussed on the effect of the hydrophobicity or hydrophilicity of the transparent surface and the effect of its geometry. Film thickness measurements were performed using ball-on-disc and lens-on-disc configurations of optical test device as a function of time. Chromatic interferograms were recorded with a high-speed complementary metal-oxide semiconductor digital camera and evaluated with thin film colorimetric interferometry. It was clarified that a chromium layer covering the glass disc has a hydrophobic behaviour which supports the adsorption of proteins contained in the bovine serum solution, thereby a thicker lubricating film is formed. On the contrary, the protein film formation was not observed when the disc was covered with a silica layer having a hydrophilic behaviour. In this case, a very thin lubricating film was formed only due to the hydrodynamic effect. Metal and ceramic balls have no substantial effect on lubricant film formation although their contact surfaces have relatively different wettability. It was confirmed that conformity of contacting surfaces and kinematic conditions has fundamental effect on bovine serum film formation. In the ball-on-disc configuration, the lubricant film is formed predominantly due to protein aggregations, which pass through the contact zone and increase the film thickness. In the more conformal ball-on-lens configuration, the lubricant film is formed predominantly due to hydrodynamic effect, thereby the film thickness is kept constant during measurement.

  15. Optical behavior of silver nanoparticles embedded in polymer thin film layers

    Science.gov (United States)

    Carlberg, M.; Pourcin, F.; Margeat, O.; Le Rouzo, J.; Berginc, G.; Sauvage, R.-M.; Ackermann, J.; Escoubas, L.

    2016-09-01

    The study of metal nanoparticles (NPs) is challenging for the control of the light matter interaction phenomena. In this context, our work is focused on optical characterization and modeling of polymer thin films layers with inclusions of previously chemically synthesized NPs. Through the presence of metallic NPs in polymer thin films, the optical properties are assumed to become tunable. Thin film layers with inclusions of differently shaped and sized silver NPs, such as nanospheres and nanoprisms, are optically characterized to get the scattering, the reflection and the absorption of the layers. One step and two step seed based methods of silver ions reduction are used for the chemical synthesis of nanospheres and nanoprisms. The plasmonic resonance peaks of these colloidal solutions range from 360 to 1300 nm. A poly vinyl pyrrolidone (PVP) polymer matrix is chosen for its light non-absorbing and NP-stabilizing properties. Knowledge on the shape and size of the NPs embedded in the spin coated layers is obtained by transmission electron microscopy (TEM) imaging. The optical properties include spectrophotometry and spectroscopic ellipsometry (SE) measurements to get the reflectance, the transmittance, the absorptance and the optical indices n and k of the heterogeneous layers. A redshift in absorption is measured between deposited nanospheres and other shaped NPs. FDTD simulations allow calculation of far and near field properties. The visualization of the NP interactions and the electric field enhancement, on and around the NPs, are studied to improve the understanding of the far field properties.

  16. Effect of illumination on linear and nonlinear optical parameters of Ga5Se95 thin films

    Science.gov (United States)

    Zedan, I. T.; El-Nahass, M. M.

    2015-09-01

    Ga5Se95 films were prepared by using thermal evaporation technique. X-ray showed that the powder samples as well as thin-film samples are crystalline in nature. The optical constants (refractive index n and rad absorption index k) of Ga5Se95 films were calculated using Murmann's exact method. The photoinduced red shift of the optical gap (photodarkening) appeared in Ga5Se95 films after illumination. The indirect energy gap was decreased from 1.75 eV for the as-deposited films to 1.65 eV for illuminated thin films 1 h. The concentration of color centers was calculated by using Gaussian fitting for peaks of the absorption coefficient ( α) and was found to increase from 5.6 × 1024 to 6.2 × 1024 cm-3 with illumination time. The effect of illumination on the nonlinear optical susceptibility ( χ (3)) and nonlinear refractive index ( n 2) is estimated using empirical relations.

  17. Optical layer development for thin films thermal conductivity measurement by pulsed photothermal radiometry

    Energy Technology Data Exchange (ETDEWEB)

    Martan, J., E-mail: jmartan@ntc.zcu.cz [New Technologies Research Centre, University of West Bohemia, Univerzitní 8, 306 14 Plzeň (Czech Republic)

    2015-01-15

    Measurement of thermal conductivity and volumetric specific heat of optically transparent thin films presents a challenge for optical-based measurement methods like pulsed photothermal radiometry. We present two approaches: (i) addition of an opaque optical layer to the surface and (ii) approximate correction of the mathematical model to incorporate semitransparency of the film. Different single layer and multilayer additive optical layers were tested. The materials of the optical layers were chosen according to analysis and measurement of their optical properties: emissivity and absorption coefficient. Presented are thermal properties’ measurement results for 6 different thin films with wide range of thermal conductivity in three configurations of surface: as deposited, added Ti layer, and added Ti/TiAlSiN layer. Measurements were done in dependence on temperature from room temperature to 500 °C. The obtained thermal effusivity evolution in time after the laser pulse shows different effects of the surface layers: apparent effusivity change and time delay. Suitability of different measurement configurations is discussed and results of high temperature testing of different optical layers are presented.

  18. Structural and optical properties of ZnO–SnO{sub 2} mixed thin films deposited by spray pyrolysis

    Energy Technology Data Exchange (ETDEWEB)

    Tharsika, T., E-mail: tharsika@siswa.um.edu.my; Haseeb, A.S.M.A., E-mail: haseeb@um.edu.my; Sabri, M.F.M., E-mail: faizul@um.edu.my

    2014-05-02

    Nanocrystalline ZnO–SnO{sub 2} mixed thin films were deposited by the spray pyrolysis technique at various substrate temperatures during deposition. The mixed films were prepared in the range of 20.9 at.% to 73.4 at.% by altering the Zn/(Sn + Zn) atomic ratio in the starting solution. Morphology, crystal structures, and optical properties of the films were characterized by field-emission scanning electron microscopy (FESEM), X-ray diffraction (XRD), and ultraviolet–visible and photoluminescence (PL) spectroscopy. XRD analysis reveals that the crystallinity of the Sn-rich mixed thin films increases with increasing substrate temperatures. FESEM images show that the grain size of mixed thin films is smaller compared to that of pure ZnO and SnO{sub 2} thin films. A drop in the thickness and optical bandgap of the film was observed for films fabricated at high temperatures, which coincided with the increased crystallinity of the films. The average optical transmission of mixed thin films increased from 70% to 95% within the visible range (400–800 nm) as the substrate temperature increases. Optical bandgap of the films was determined to be in the range of 3.21–3.96 eV. The blue shift in the PL spectra from the films was supported by the fact that grain size of the mixed thin films is much smaller than that of the pure ZnO and SnO{sub 2} thin films. Due to the improved transmission and reduced grain size, the ZnO–SnO{sub 2} mixed thin films can have potential use in photovoltaic and gas sensing applications. - Highlights: • ZnO–SnO{sub 2} mixed thin films were deposited on glass substrate by spray pyrolysis. • Crystallinity of the thin films increases with substrate temperature. • Grain size of the mixed thin films is smaller than that of the pure thin films. • Reduction of grain size depends on mixed atomic ratios of precursor solution. • Optical band gap of films could be engineered by changing substrate temperature.

  19. Optical bandgap of single- and multi-layered amorphous germanium ultra-thin films

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Pei; Zaslavsky, Alexander [Department of Physics and School of Engineering, Brown University, 182-184 Hope St., Providence, Rhode Island 02912 (United States); Longo, Paolo [Gatan, Inc., 5794 W Las Positas Blvd., Pleasanton, California 94588 (United States); Pacifici, Domenico, E-mail: Domenico-Pacifici@brown.edu [School of Engineering, Brown University, 184 Hope St., Providence, Rhode Island 02912 (United States)

    2016-01-07

    Accurate optical methods are required to determine the energy bandgap of amorphous semiconductors and elucidate the role of quantum confinement in nanometer-scale, ultra-thin absorbing layers. Here, we provide a critical comparison between well-established methods that are generally employed to determine the optical bandgap of thin-film amorphous semiconductors, starting from normal-incidence reflectance and transmittance measurements. First, we demonstrate that a more accurate estimate of the optical bandgap can be achieved by using a multiple-reflection interference model. We show that this model generates more reliable results compared to the widely accepted single-pass absorption method. Second, we compare two most representative methods (Tauc and Cody plots) that are extensively used to determine the optical bandgap of thin-film amorphous semiconductors starting from the extracted absorption coefficient. Analysis of the experimental absorption data acquired for ultra-thin amorphous germanium (a-Ge) layers demonstrates that the Cody model is able to provide a less ambiguous energy bandgap value. Finally, we apply our proposed method to experimentally determine the optical bandgap of a-Ge/SiO{sub 2} superlattices with single and multiple a-Ge layers down to 2 nm thickness.

  20. Optical bandgap of single- and multi-layered amorphous germanium ultra-thin films

    Science.gov (United States)

    Liu, Pei; Longo, Paolo; Zaslavsky, Alexander; Pacifici, Domenico

    2016-01-01

    Accurate optical methods are required to determine the energy bandgap of amorphous semiconductors and elucidate the role of quantum confinement in nanometer-scale, ultra-thin absorbing layers. Here, we provide a critical comparison between well-established methods that are generally employed to determine the optical bandgap of thin-film amorphous semiconductors, starting from normal-incidence reflectance and transmittance measurements. First, we demonstrate that a more accurate estimate of the optical bandgap can be achieved by using a multiple-reflection interference model. We show that this model generates more reliable results compared to the widely accepted single-pass absorption method. Second, we compare two most representative methods (Tauc and Cody plots) that are extensively used to determine the optical bandgap of thin-film amorphous semiconductors starting from the extracted absorption coefficient. Analysis of the experimental absorption data acquired for ultra-thin amorphous germanium (a-Ge) layers demonstrates that the Cody model is able to provide a less ambiguous energy bandgap value. Finally, we apply our proposed method to experimentally determine the optical bandgap of a-Ge/SiO2 superlattices with single and multiple a-Ge layers down to 2 nm thickness.

  1. Growth of thin films of organic nonlinear optical materials by vapor growth processes - An overview and examination of shortfalls

    Science.gov (United States)

    Frazier, D. O.; Penn, B. G.; Witherow, W. K.; Paley, M. S.

    1991-01-01

    Research on the growth of second- and third-order nonlinear optical (NLO) organic thin film by vapor deposition is reviewed. Particular attention is given to the experimental methods for growing thin films of p-chlorophenylurea, diacetylenes, and phthalocyanines; characteristics of the resulting films; and approaches for advancing thin film technology. It is concluded that the growth of NLO thin films by vapor processes is a promising method for the fabrication of planar waveguides for nonlinear optical devices. Two innovative approaches are proposed including a method of controlling the input beam frequency to maximize nonlinear effects in thin films and single crystals, and the alternate approach to the molecular design of organic NLO materials by increasing the transition dipole moment between ground and excited states of the molecule.

  2. Thin film device applications

    CERN Document Server

    Kaur, Inderjeet

    1983-01-01

    Two-dimensional materials created ab initio by the process of condensation of atoms, molecules, or ions, called thin films, have unique properties significantly different from the corresponding bulk materials as a result of their physical dimensions, geometry, nonequilibrium microstructure, and metallurgy. Further, these characteristic features of thin films can be drasti­ cally modified and tailored to obtain the desired and required physical characteristics. These features form the basis of development of a host of extraordinary active and passive thin film device applications in the last two decades. On the one extreme, these applications are in the submicron dimensions in such areas as very large scale integration (VLSI), Josephson junction quantum interference devices, magnetic bubbles, and integrated optics. On the other extreme, large-area thin films are being used as selective coatings for solar thermal conversion, solar cells for photovoltaic conver­ sion, and protection and passivating layers. Ind...

  3. Optical, structural and electrochromic properties of sputter- deposited W-Mo oxide thin films

    Science.gov (United States)

    Gesheva, K.; Arvizu, M. A.; Bodurov, G.; Ivanova, T.; Niklasson, G. A.; Iliev, M.; Vlakhov, T.; Terzijska, P.; Popkirov, G.; Abrashev, M.; Boyadjiev, S.; Jágerszki, G.; Szilágyi, I. M.; Marinov, Y.

    2016-10-01

    Thin metal oxide films were investigated by a series of characterization techniques including impedance spectroscopy, spectroscopic ellipsometry, Raman spectroscopy, and Atomic Force Microscopy. Thin film deposition by reactive DC magnetron sputtering was performed at the Ångström Laboratory. W and Mo targets (5 cm diameter) and various oxygen gas flows were employed to prepare samples with different properties, whereas the gas pressure was kept constant at about 30 mTorr. The substrates were 5×5 cm2 plates of unheated glass pre-coated with ITO having a resistance of 40 ohm/sq. Film thicknesses were around 300 nm as determined by surface profilometry. Newly acquired equipment was used to study optical spectra, optoelectronic properties, and film structure. Films of WO3 and of mixed W- Mo oxide with three compositions showed coloring and bleaching under the application of a small voltage. Cyclic voltammograms were recorded with a scan rate of 5 mV s-1. Ellipsometric data for the optical constants show dependence on the amount of MoOx in the chemical composition. Single MoOx film, and the mixed one with only 8% MoOx have the highest value of refractive index, and similar dispersion in the visible spectral range. Raman spectra displayed strong lines at wavenumbers between 780 cm-1 and 950 cm-1 related to stretching vibrations of WO3, and MoO3. AFM gave evidence for domains of different composition in mixed W-Mo oxide films.

  4. Photocatalytic and optical properties of nanocomposite TiO2-ZnO thin films

    Science.gov (United States)

    Mohamed, S. H.; El-Hagary, M.; Althoyaib, S.

    2012-01-01

    Nanocomposite TiO2-ZnO thin films, with different ZnO content, were deposited by electron-beam evaporation on glass and Si(1 0 0) substrates. The resulting films were annealed in air for 1 h at 450 °C. X-ray diffraction revealed the presence of monoclinic β-TiO2 and hexagonal ZnO for the films prepared with ZnO content of 0 at.% and 100 at.%, respectively. Mixed monoclinic β-TiO2 and hexagonal ZnO phases were observed at higher ZnO content between 50 at.% and 85 at.%. Spectroscopic ellipsometry (SE) was employed to determine the film thickness and optical constants. A two-layer model was used to describe the experimental ellipsometric data. At any wavelength longer than 390 nm, the refractive index decreases gradually with increasing ZnO content in the composite films. The optical band gap increased with increasing ZnO content. The photocatalytic behavior of TiO2-ZnO thin films was mainly evaluated by measuring the decomposition of methylene blue. The nanocomposite film with ZnO content of 8 at.% has the best photocatalytic activities.

  5. Microstructure and Optical Characterization of Magnetron Sputtered NbN Thin Films

    Institute of Scientific and Technical Information of China (English)

    DU Xin-kang; WANG Tian-min; WANG Cong; CHEN Bu-liang; ZHOU Long

    2007-01-01

    Some fundamental studies on the preparation, structure and optical properties of NbN films were carried out. NbN thin films were deposited by DC reactive magnetron sputtering at different N2 partial pressures and different substrate temperatures ranging from -50 ℃to 600 ℃. X-ray diffraction analysis (XRD) and scanning electron microscopy (SEM) were employed to characterize their phase components, microstructures, grain sizes and surface morphology. Optical properties inclusive of refractive indexes, extinction coefficients and transmittance of the NbN films under different sputtering conditions were measured. With the increase in the N2 partial pressure,δ-NbN phase structure gets forming and the grain size and lattice constant of the cubic NbN increasing. The deposited NbN film has relatively high values of refractive index and extinction coefficient in the wavelength ranging from 240 nm to 830 nm. Substrate temperature exerts notable influences on the microstructure and optical transmittance of the NbN films. The grain sizes of the δ-NbN film remarkably increase with the rise of the substrate temperature, while the transmittance of the films with the same thickness decreases.Ultra-fine granular film with particle size of several nanometers forms when the substrate is cooled to -50 ℃, and a remarkable augmentation of transmittance could be noticed under so low a temperature.

  6. The changes in optical absorbance of ZrO{sub 2} thin film with the rise of the absorbed dose

    Energy Technology Data Exchange (ETDEWEB)

    Abayli, D., E-mail: abayli@itu.edu.tr; Baydogan, N., E-mail: dogannil@itu.edu.tr [Energy Institute, Istanbul Technical University, Ayazaga Campus, 34469, Istanbul (Turkey)

    2016-03-25

    In this study, zirconium oxide (ZrO{sub 2}) thin film samples prepared by sol–gel method were irradiated using Co-60 radioisotope as gamma source. Then, it was investigated the ionizing effect on optical properties of ZrO{sub 2} thin film samples with the rise of the absorbed dose. The changes in the optical absorbance of ZrO{sub 2} thin films were determined by using optical transmittance and the reflectance measurements in the range between 190 – 1100 nm obtained from PG Instruments T80 UV-Vis spectrophotometer.

  7. Optical and electrical properties of TiOPc doped Alq3 thin films

    Science.gov (United States)

    Ramar, M.; Suman, C. K.; Tyagi, Priyanka; Srivastava, R.

    2015-06-01

    The Titanyl phthalocyanine (TiOPc) was doped in Tris (8-hydroxyquinolinato) aluminum (Alq3) with different concentration. The thin film of optimized doping concentration was studied extensively for optical and electrical properties. The optical properties, studied using ellipsometry, absorption and photoluminescence. The absorption peak of Alq3 and TiOPc was observed at 387 nm and 707 nm and the photo-luminescence intensity (PL) peak of doped thin film was observed at 517 nm. The DC and AC electrical properties of the thin film were studied by current density-voltage (J-V) characteristics and impedance over a frequency range of 100 Hz - 1 MHz. The electron mobility calculated from trap-free space-charge limited region (SCLC) is 0.17×10-5 cm2/Vs. The Cole-Cole plots shows that the TiOPc doped Alq3 thin film can be represented by a single parallel resistance RP and capacitance CP network with a series resistance RS (10 Ω). The value of RP and CP at zero bias was 1587 Ω and 2.568 nF respectively. The resistance RP decreases with applied bias whereas the capacitance CP remains almost constant.

  8. Optical and electrical properties of TiOPc doped Alq{sub 3} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Ramar, M.; Suman, C. K., E-mail: sumanck@nplindia.org; Tyagi, Priyanka; Srivastava, R. [CSIR-Network of Institutes for Solar Energy CSIR - National Physical Laboratory, Dr. K. S. Krishnan Marg, New Delhi -110012 (India)

    2015-06-24

    The Titanyl phthalocyanine (TiOPc) was doped in Tris (8-hydroxyquinolinato) aluminum (Alq3) with different concentration. The thin film of optimized doping concentration was studied extensively for optical and electrical properties. The optical properties, studied using ellipsometry, absorption and photoluminescence. The absorption peak of Alq{sub 3} and TiOPc was observed at 387 nm and 707 nm and the photo-luminescence intensity (PL) peak of doped thin film was observed at 517 nm. The DC and AC electrical properties of the thin film were studied by current density-voltage (J-V) characteristics and impedance over a frequency range of 100 Hz - 1 MHz. The electron mobility calculated from trap-free space-charge limited region (SCLC) is 0.17×10{sup −5} cm{sup 2}/Vs. The Cole-Cole plots shows that the TiOPc doped Alq{sub 3} thin film can be represented by a single parallel resistance R{sub P} and capacitance C{sub P} network with a series resistance R{sub S} (10 Ω). The value of R{sub P} and C{sub P} at zero bias was 1587 Ω and 2.568 nF respectively. The resistance R{sub P} decreases with applied bias whereas the capacitance C{sub P} remains almost constant.

  9. Nonlinear optical properties of laser deposited CuO thin films

    Energy Technology Data Exchange (ETDEWEB)

    Chen Aiping [Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074 (China); Yang Guang, E-mail: gyang@mail.hust.edu.c [Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074 (China); Long Hua; Li Fang; Li Yuhua [Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074 (China); Lu Peixiang, E-mail: lupeixiang@mail.hust.edu.c [Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074 (China)

    2009-06-01

    In this work we investigate the third-order optical nonlinearities in CuO films by Z-scan method using a femtosecond laser (800 nm, 50 fs, 200 Hz). Single-phase CuO thin films have been obtained using pulsed laser deposition technique. The structure properties, surface image, optical transmittance and reflectance of the films were characterized by X-ray diffraction, Raman spectroscopy, scanning electron microscopy and UV-vis spectroscopy. The Z-scan results show that laser-deposited CuO films exhibit large nonlinear refractive coefficient, n{sub 2} = - 3.96 x 10{sup -17} m{sup 2}/W, and nonlinear absorption coefficient, {beta} = - 1.69 x 10{sup -10} m/W, respectively.

  10. Structural and optical properties of CdO thin films deposited by RF magnetron sputtering technique

    Energy Technology Data Exchange (ETDEWEB)

    Kumar, G. Anil, E-mail: anilhcu@gmail.com; Reddy, M. V. Ramana, E-mail: anilhcu@gmail.com [Department of Physics, Osmania University, Hyderabad-500007 (India); Reddy, Katta Narasimha, E-mail: anilhcu@gmail.com [Department of Physics, Mahatma Gandhi University, Nalgonda-508003 (India)

    2014-04-24

    Cadmium oxide (CdO) thin films were deposited on glass substrate by r.f. magnetron sputtering technique using a high purity (99.99%) Cd target of 2-inch diameter and 3 mm thickness in an Argon and oxygen mixed atmosphere with sputtering power of 50W and sputtering pressure of 2×10{sup −2} mbar. The prepared films were characterized by X-ray diffraction (XRD), optical spectroscopy and scanning electron microscopy (SEM). The XRD analysis reveals that the films were polycrystalline with cubic structure. The visible range transmittance was found to be over 70%. The optical band gap increased from 2.7 eV to2.84 eV with decrease of film thickness.

  11. Optical properties of polysiloxane hybrid thin films containing nano-sized Ag-As-Se chalcogenide clusters

    Science.gov (United States)

    Zha, Congji; Osvath, Peter; Wilson, Gerry; Launikonis, Anton

    2009-02-01

    Chalcogenide glasses are attractive for all-optical signal processing due to their outstanding optical properties, including large optical nonlinearity, a high refractive index and high photosensitivity. In device fabrication, a challenge lies in the difficulty of obtaining thin films with a high stability and good uniformity. In this paper, optical thin films containing nano-sized chalcogenide clusters in polysiloxane matrices are fabricated by a modified plasma deposition process. The optical absorption and luminescence emission properties of the hybrid thin films were characterized by UV-Vis-NIR and fluorescence spectroscopy. Luminescent emission from Ag-As-Se nano-sized clusters was observed for the first time in these nano-hybrid thin films, and the mechanism was discussed.

  12. [Spectral emissivity of thin films].

    Science.gov (United States)

    Zhong, D

    2001-02-01

    In this paper, the contribution of multiple reflections in thin film to the spectral emissivity of thin films of low absorption is discussed. The expression of emissivity of thin films derived here is related to the thin film thickness d and the optical constants n(lambda) and k(lambda). It is shown that in the special case d-->infinity the emissivity of thin films is equivalent to that of the bulk material. Realistic numerical and more precise general numerical results for the dependence of the emissivity on d, n(lambda) and k(lambda) are given.

  13. Optical properties of silver sulphide thin films formed on evaporated Ag by a simple sulphurization method

    Energy Technology Data Exchange (ETDEWEB)

    Barrera-Calva, E., E-mail: ebc@xanum.uam.m [Departamento de Ingenieria de Procesos e hidraulica, Universidad Autonoma Metropolitana - Iztapalapa, Av. Purisima Esq. Michoacan, Col. Vicentina, Mexico, D.F., 09340 (Mexico); Ortega-Lopez, M.; Avila-Garcia, A.; Matsumoto-Kwabara, Y. [Departamento de Ingenieria Electrica, Centro de Investigacion y de Estudios Avanzados del IPN, Mexico DF 07360 (Mexico)

    2010-01-31

    Silver sulphide (Ag{sub 2}S) thin films were grown on the surface of silver films (Ag) deposited on glass substrate by using a simple chemical sulphurization method. According to X-ray diffraction analysis, the Ag{sub 2}S thin films display low intensity peaks at 34.48{sup o}, 36.56{sup o}, and 44.28{sup o}, corresponding to diffraction from (100), (112) and (103) planes of the acanthite phase (monoclinic). A model of the type Ag{sub 2}S/Ag/glass was deduced from spectroscopic ellipsometric measurements. Also, the optical constants (n, k) of the system were determined. Furthermore, the optical properties as solar selective absorber for collector applications were assessed. The optical reflectance of the Ag{sub 2}S/Ag thin film systems exhibits the expected behavior for an ideal selective absorber, showing a low reflectance in the wavelength range below 2 {mu}m and a high reflectance for wavelengths higher than that value. An absorptance about 70% and an emittance about 3% or less were calculated for several samples.

  14. Electrical and Optical Properties of Fluorine Doped Tin Oxide Thin Films Prepared by Magnetron Sputtering

    Directory of Open Access Journals (Sweden)

    Ziad Y. Banyamin

    2014-10-01

    Full Text Available Fluorine doped tin oxide (FTO coatings have been prepared using the mid-frequency pulsed DC closed field unbalanced magnetron sputtering technique in an Ar/O2 atmosphere using blends of tin oxide and tin fluoride powder formed into targets. FTO coatings were deposited with a thickness of 400 nm on glass substrates. No post-deposition annealing treatments were carried out. The effects of the chemical composition on the structural (phase, grain size, optical (transmission, optical band-gap and electrical (resistivity, charge carrier, mobility properties of the thin films were investigated. Depositing FTO by magnetron sputtering is an environmentally friendly technique and the use of loosely packed blended powder targets gives an efficient means of screening candidate compositions, which also provides a low cost operation. The best film characteristics were achieved using a mass ratio of 12% SnF2 to 88% SnO2 in the target. The thin film produced was polycrystalline with a tetragonal crystal structure. The optimized conditions resulted in a thin film with average visible transmittance of 83% and optical band-gap of 3.80 eV, resistivity of 6.71 × 10−3 Ω·cm, a carrier concentration (Nd of 1.46 × 1020 cm−3 and a mobility of 15 cm2/Vs.

  15. Practice-oriented optical thin film growth simulation via multiple scale approach

    Energy Technology Data Exchange (ETDEWEB)

    Turowski, Marcus, E-mail: m.turowski@lzh.de [Laser Zentrum Hannover e.V., Hollerithallee 8, Hannover 30419 (Germany); Jupé, Marco [Laser Zentrum Hannover e.V., Hollerithallee 8, Hannover 30419 (Germany); QUEST: Centre of Quantum Engineering and Space-Time Research, Leibniz Universität Hannover (Germany); Melzig, Thomas [Fraunhofer Institute for Surface Engineering and Thin Films IST, Bienroder Weg 54e, Braunschweig 30108 (Germany); Moskovkin, Pavel [Research Centre for Physics of Matter and Radiation (PMR-LARN), University of Namur (FUNDP), 61 rue de Bruxelles, Namur 5000 (Belgium); Daniel, Alain [Centre for Research in Metallurgy, CRM, 21 Avenue du bois Saint Jean, Liège 4000 (Belgium); Pflug, Andreas [Fraunhofer Institute for Surface Engineering and Thin Films IST, Bienroder Weg 54e, Braunschweig 30108 (Germany); Lucas, Stéphane [Research Centre for Physics of Matter and Radiation (PMR-LARN), University of Namur (FUNDP), 61 rue de Bruxelles, Namur 5000 (Belgium); Ristau, Detlev [Laser Zentrum Hannover e.V., Hollerithallee 8, Hannover 30419 (Germany); QUEST: Centre of Quantum Engineering and Space-Time Research, Leibniz Universität Hannover (Germany)

    2015-10-01

    Simulation of the coating process is a very promising approach for the understanding of thin film formation. Nevertheless, this complex matter cannot be covered by a single simulation technique. To consider all mechanisms and processes influencing the optical properties of the growing thin films, various common theoretical methods have been combined to a multi-scale model approach. The simulation techniques have been selected in order to describe all processes in the coating chamber, especially the various mechanisms of thin film growth, and to enable the analysis of the resulting structural as well as optical and electronic layer properties. All methods are merged with adapted communication interfaces to achieve optimum compatibility of the different approaches and to generate physically meaningful results. The present contribution offers an approach for the full simulation of an Ion Beam Sputtering (IBS) coating process combining direct simulation Monte Carlo, classical molecular dynamics, kinetic Monte Carlo, and density functional theory. The simulation is performed exemplary for an existing IBS-coating plant to achieve a validation of the developed multi-scale approach. Finally, the modeled results are compared to experimental data. - Highlights: • A model approach for simulating an Ion Beam Sputtering (IBS) process is presented. • In order to combine the different techniques, optimized interfaces are developed. • The transport of atomic species in the coating chamber is calculated. • We modeled structural and optical film properties based on simulated IBS parameter. • The modeled and the experimental refractive index data fit very well.

  16. Post Deposition Annealing Effects on Optical, Electrical and Morphological Studies of ZnTTBPc Thin Films

    Directory of Open Access Journals (Sweden)

    B. R. Rejitha

    2012-01-01

    Full Text Available Phthalocyanines (Pcs act as efficient absorbants of photons in the visible region, specifically between 600 and 700 nm. It will produce an excited triplet state. In this paper we report the annealing effects of optical, electrical and surface morphological properties of thermal evaporated Zinc-tetra-tert-butyl-29H, 31H phthalocyanine (ZnTTBPc thin films. The optical transmittance measurements were done in the visible region (400-800 nm and, films were found to be absorbing in nature. From spectral data the absorption coefficient α, dielectric constant ε and the extinction coefficient k were evaluated and, results discussed. Also the optical band gap of the material was estimated. The activation energies were measured. Scanning electron microscopic studies was carried out to determine surface uniformity of films.

  17. Optical Properties of Al- and Sb-Doped CdTe Thin Films

    Directory of Open Access Journals (Sweden)

    A. A. J. Al-Douri

    2010-01-01

    Full Text Available Nondoped and (Al, Sb-doped CdTe thin films with 0.5, 1.5, and 2.5  wt.%, respectively, were deposited by thermal evaporation technique under vacuum onto Corning 7059 glass at substrate temperatures ( of room temperature (RT and 423 K. The optical properties of deposited CdTe films such as band gap, refractive index (n, extinction coefficient (, and dielectric coefficients were investigated as function of Al and Sb wt.% doping, respectively. The results showed that films have direct optical transition. Increasing and the wt.% of both types of dopant, the band gap decrease but the optical is constant as n, and real and imaginary parts of the dielectric coefficient increase.

  18. Effects of Alloying on the Optical Properties of Organic-Inorganic Lead Halide Perovskite Thin Films

    Energy Technology Data Exchange (ETDEWEB)

    Ndione, Paul F.; Li, Zhen; Zhu, Kai

    2016-09-07

    Complex refractive index and dielectric function spectra of organic-inorganic lead halide perovskite alloy thin films are presented, together with the critical-point parameter analysis (energy and broadening) of the respective composition. Thin films of methylammonium lead halide alloys (MAPbI3, MAPbBr3, MAPbBr2I, and MAPbBrI2), formamidinium lead halide alloys (FAPbI3, FAPbBr3, and FAPbBr2I), and formamidinium cesium lead halide alloys [FA0.85Cs0.15PbI3, FA0.85Cs0.15PbBrI2, and FA0.85Cs0.15Pb(Br0.4I0.6)3] were studied. The complex refractive index and dielectric functions were determined by spectroscopic ellipsometry (SE) in the photon energy range of 0.7-6.5 eV. Critical point energies and optical transitions were obtained by lineshape fitting to the second-derivative of the complex dielectric function data of these thin films as a function of alloy composition. Absorption onset in the vicinity of the bandgap, as well as critical point energies and optical band transition shift toward higher energies as the concentration of Br in the films increases. Cation alloying (Cs+) has less effect on the optical properties of the thin films compared to halide mixed alloys. The reported optical properties can help to understand the fundamental properties of the perovskite materials and also be used for optimizing or designing new devices.

  19. Effect of defects on long-pulse laser-induced damage of two kinds of optical thin films.

    Science.gov (United States)

    Wang, Bin; Qin, Yuan; Ni, Xiaowu; Shen, Zhonghua; Lu, Jian

    2010-10-10

    In order to study the effect of defects on the laser-induced damage of different optical thin films, we carried out damage experiments on two kinds of thin films with a 1 ms long-pulse laser. Surface-defect and subsurface-defect damage models were used to explain the damage morphology. The two-dimensional finite element method was applied to calculate the temperature and thermal-stress fields of these two films. The results show that damages of the two films are due to surface and subsurface defects, respectively. Furthermore, the different dominant defects for thin films of different structures are discussed.

  20. Enhanced electrical and optical properties of CdS:Na thin films by photochemical deposition

    Science.gov (United States)

    Kumar, V. Nirmal; Suriakarthick, R.; Gopalakrishnan, R.; Hayakawa, Y.

    2017-06-01

    CdS:Na thin film was deposited on a glass substrate by photochemical deposition from aqueous solution contained CdSO4.5H2O and Na2S2O3 as cation and anion sources, respectively. The anion source Na2S2O3 served as Na dopant source. The deposited film exhibited cubic phase of CdS and incorporation of Na was revealed from X-ray diffraction study. The incorporation of Na in CdS changed the surface morphology from spherical to nano rods. CdS:Na thin film showed blue shift in its absorption spectrum which was more desirable for transmitting higher energy photons (visible region) in thin film solar cells. The Raman analysis confirmed 1 LO and 2 LO process at 297 and 593 cm-1, respectively. The carrier concentration of CdS increased with the inclusion of Na and its resistivity value decreased. Both the electrical and optical properties of CdS were enhanced in CdS:Na thin films which was desirable as a window layer material for photovoltaic application.

  1. Growth, Optical and Electirical Properties of In2Se3 Thin Films by the (SILAR) Method

    Science.gov (United States)

    Astam, A.; Kundakçi, M.; Akaltun, Y.; Yildirim, A.; Ateş, A.; Yildirim, M.

    2007-04-01

    Indium selenide (In2Se3) thin films were grown on glass substrates by using Successive Ionic Layer Adsorption and Reaction (SILAR) technique at room temperature. The In2Se3 thin films have been characterized by X-ray diffraction (XRD) and scanning electron microscopy (SEM) for crystallographic and surface morphological properties. The band gaps of the films were determined by optical absorption measurements which were carried out in the temperature range 10-320K, It has been seen that, the band gap energies of the In2Se3 thin films are decreasing with increasing temperature. The electrical characterizations of the samples were done by two point probe current-voltage measurements which were carried out in the temperature range 300-450K. It has observed that the electrical resistivity decreased with increasing temperature. The electrical resistivity of the thin films were found 8×104-2×106 Ω cm at T=450K and T=300K, respectively.

  2. Laser modulated scattering as a nondestructive evaluation tool for optical surfaces and thin film coatings

    Energy Technology Data Exchange (ETDEWEB)

    Feit, M D; Kozlowski, M R; Rubenchik, A M; Sheehan, L; Wu, Z L

    1999-12-22

    Laser modulated scattering (LMS) is introduced as a non-destructive evaluation tool for defect inspection and characterization of optical surfaces and thin film coatings. This technique is a scatter sensitive version of the well-known photothermal microscopy (PTM) technique. It allows simultaneous measurement of the DC and AC scattering signals of a probe laser beam from an optical surface. By comparison between the DC and AC scattering signals, one can differentiate absorptive defects from non-absorptive ones. This paper describes the principle of the LMS technique and the experimental setup, and illustrates examples on using LMS as a tool for nondestructive evaluation of high quality optics.

  3. Optical Properties of In2S3 Thin Films

    Science.gov (United States)

    Bodnar, I. V.; Polubok, V. A.

    2014-11-01

    Laser deposition on substrates at temperatures of 480, 610, and 720 K has been used to produce films of the compound In2S3. Single crystals of this compound grown by the Bridgeman-Stockbarger method are used as targets. The composition is determined by x-ray spectral analysis and the structure of the resulting crystals and films is determined by x-ray methods. Both the crystals and the films crystallize into a tetragonal spinel structure. Transmission spectra in the region of the intrinsic absorption edge are used to determine the width of the band gap and the refractive index of the In2S3 films. The band gap width is found to increase as the substrate temperature is raised.

  4. Structure and Optical Properties of thin Porous Anodic Alumina Films Synthesized on a Glass Surface

    Science.gov (United States)

    Valeev, R. G.; Petukhov, D. I.; Kriventsov, V. V.

    The structure and luminescent properties of thin nanoporous aluminum oxide films obtained by anodization of aluminum films thermally deposited on glass have been investigated. The pore size and the interpore distance depend on the anodization voltage. For all studied samples the highest emission intensity obtained at the excitation wavelength equal to 330 nm. This behavior of luminescence curves caused by defect F+ luminescent centers (O- oxygen vacancies). The presence of porous alumina films on the glass surface increases the optical absorption in the visible light region. The oscillations on the spectra are caused by Fabry-Perot interference on the anodic alumina oxide film/glass interface. The suggested technique can be used for obtaining porous aluminum oxide films on other substrates, including Indium-Tin-Oxide, and can be applied in the technology of light-emitting devices and infrared-visible-ultraviolet detectors.

  5. Structure Analysis and Optical Parameters of Nano-scale ZnSe/Flexible Substrate Thin Film

    Science.gov (United States)

    Shaaban, E. R.; Yahia, I. S.; Sharaf, E. R.

    2016-09-01

    The ZnSe thin films with different thicknesses have been deposited on polymer substrates for flexible optical devices applications. The XRD of different thicknesses for ZnSe films reveals the cubic structure of the films oriented along the (1 1 1) direction. The structural parameters such as particle size (40.41-105.24 nm) and lattice strain (6.5 × 10-3-14.7 × 10-3 lin-2m-4) were evaluated. Also AFM was used in order to obtain quantitative information on microstructure properties. The optical constants, the refractive index n and the absorption index k have been calculated from transmittance T and reflectance R through the spectral range of 400-2500 nm using Swanepoel's method. The optical constants (n, k) were calculated in medium and transparent regions. The energy gap of direct transition for polycrystalline ZnSe thin films was calculated in the strong absorption region and found to be increased from 2.55 eV to 2.70 eV with the increasing the film thickness. ZnSe/flexible substrates are good candidates for optoelectronic devices.

  6. The effect of annealing temperature on the optical properties of a ruthenium complex thin film

    Energy Technology Data Exchange (ETDEWEB)

    Ocakoglu, Kasim, E-mail: kasim.ocakoglu@mersin.edu.tr [Advanced Technology Research & Application Center, Mersin University, TR-33343, Yenisehir, Mersin (Turkey); Department of Energy Systems Engineering, Faculty of Technology, Mersin University, TR-33480 Mersin (Turkey); Okur, Salih, E-mail: salih.okur@ikc.edu.tr [Department of Materials Science and Engineering, Faculty of Engineering and Architecture, Izmir Katip Celebi University, Izmir (Turkey); Aydin, Hasan [Izmir Institute of Technology, Department of Material Science and Engineering, Gulbahce Campus, 35430, Urla, Izmir (Turkey); Emen, Fatih Mehmet [Faculty of Arts and Sciences, Department of Chemistry, Mehmet Akif Ersoy University, TR-15030 Burdur (Turkey)

    2016-08-01

    The stability of the optical parameters of a ruthenium polypyridyl complex (Ru-PC K314) film under varying annealing temperatures between 278 K and 673 K was investigated. The ruthenium polypyridyl complex thin film was prepared on a quartz substrate by drop casting technique. The transmission of the film was recorded by using Ultraviolet/Visible/Near Infrared spectrophotometer and the optical band gap energy of the as-deposited film was determined around 2.20 eV. The optical parameters such as refractive index, extinction coefficient, and dielectric constant of the film were determined and the annealing effect on these parameters was investigated. The results show that Ru PC K314 film is quite stable up to 595 K, and the rate of the optical band gap energy change was found to be 5.23 × 10{sup −5} eV/K. Furthermore, the thermal analysis studies were carried out in the range 298–673 K. The Differential Thermal Analysis/Thermal Gravimmetry/Differantial Thermal Gravimmetry curves show that the decomposition is incomplete in the temperature range 298–673 K. Ru-PC K314 is thermally stable up to 387 K. The decomposition starts at 387 K with elimination of functional groups such as CO{sub 2}, CO molecules and SO{sub 3}H group was eliminated between 614 K and 666 K. - Highlights: • Optical parameters of a ruthenium polypyridyl complex film under varying annealing temperatures • The film is quite stable up to 573 K. • The rate of change of optical energy gap was obtained as 5.23 × 10{sup −5} eV/K.

  7. Thermal annealing of thin PECVD silicon-oxide films for airgap-based optical filters

    Science.gov (United States)

    Ghaderi, M.; de Graaf, G.; Wolffenbuttel, R. F.

    2016-08-01

    This paper investigates the mechanical and optical properties of thin PECVD silicon-oxide layers for optical applications. The different deposition parameters in PECVD provide a promising tool to manipulate and control the film structure. Membranes for use in optical filters typically are of ~λ/4n thickness and should be slightly tensile for remaining flat, thus avoiding scattering. The effect of the thermal budget of the process on the mechanical characteristics of the deposited films was studied. Films with compressive stress ranging from  -100 to 0 MPa were deposited. Multiple thermal annealing cycles were applied to wafers and the in situ residual stress and ex situ optical properties were measured. The residual stress in the films was found to be highly temperature dependent. Annealing during the subsequent process steps results in tensile stress from 100 to 300 MPa in sub-micron thick PECVD silicon-oxide films. However, sub-100 nm thick PECVD silicon-oxide layers exhibit a lower dependence on the thermal annealing cycles, resulting in lower stress variations in films after the annealing. It is also shown that the coefficient of thermal expansion, hence the residual stress in layers, varies with the thickness. Finally, several free-standing membranes were fabricated and the results are compared.

  8. Crystalline structure, and magnetic and magneto-optical properties of MnSbBi thin films

    CERN Document Server

    Kang, K

    2001-01-01

    the c-axis texture and the saturation magnetisation due to less segregation of the non-magnetic phase in the annealed films. Using a thin Sb seed layer in Mn/Sb/Bi// films also results in an increase in both the c-axis texture and the saturation magnetisation. Decreasing the layer thicknesses in Mn/Bi/Sb// films results in a decrease in the grain size. By depositing the Sb layer first in Pt/Mn/Sb// and Co/Mn/Sb// films, the perpendicular c-axis texture can be kept before and after annealing. Computer simulation was carried out to investigate the relationship between the crystal structure and the magnetic properties before and after annealing. Comparing optical and MO properties of annealed Mn/Sb/Bi// and Mn/Sb// films suggests a possible origin of the peaks in Kerr spectra caused by adding Bi. This thesis reports work carried out to investigate some aspects of the crystal structure, and magnetic and magneto-optical (MO) properties in thin films of the Mn-Sb system. Reports of interesting properties and the po...

  9. Growth, structure and optical characterization of Al-doped ZnO nanoparticle thin films

    Energy Technology Data Exchange (ETDEWEB)

    Prajapati, C.S.; Sahay, P.P. [Department of Physics, Motilal Nehru National Institute of Technology, Allahabad (India)

    2011-10-15

    Al-doped ZnO nanoparticle thin films were prepared on glass substrate at the optimum temperature of (410{+-}10) C by spray pyrolysis technique using zinc nitrate as a precursor solution and aluminium chloride as a dopant. The dopant concentration (Al/Zn at%) was varied from 0 to 2 at%. Structural analysis of the films shows that all the films are of polycrystalline zinc oxide in nature, possessing hexagonal wurtzite structure. The films exhibit variation in peak intensities corresponding to (100), (002) and (101) reflection planes on Al-doping. The crystallite size calculated by Scherrer formula has been found to be in the range of 35-65 nm. The optical absorption study shows that the optical band gap in the Al-doped films varies in the range of 3.11 - 3.22 eV. The width of localized states in the band gap estimated by the Urbach tail analysis has been found to be minimum in case of the 1 at% Al-doped zinc oxide thin film. (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  10. Annealing effect on structural and optical properties of chemical bath deposited MnS thin film

    Energy Technology Data Exchange (ETDEWEB)

    Ulutas, Cemal, E-mail: cemalulutas@hakkari.edu.tr [Faculty of Education, Hakkari Universty, 30000, Hakkari (Turkey); Gumus, Cebrail [Faculty of Science and Letters, Cukurova University, 01330, Adana (Turkey)

    2016-03-25

    MnS thin film was prepared by the chemical bath deposition (CBD) method on commercial microscope glass substrate deposited at 30 °C. The as-deposited film was given thermal annealing treatment in air atmosphere at various temperatures (150, 300 and 450 °C) for 1 h. The MnS thin film was characterized by using X-ray diffraction (XRD), UV-vis spectrophotometer and Hall effect measurement system. The effect of annealing temperature on the structural, electrical and optical properties such as optical constants of refractive index (n) and energy band gap (E{sub g}) of the film was determined. XRD measurements reveal that the film is crystallized in the wurtzite phase and changed to tetragonal Mn{sub 3}O{sub 4} phase after being annealed at 300 °C. The energy band gap of film decreased from 3.69 eV to 3.21 eV based on the annealing temperature.

  11. Optical properties of electrochemically synthesized polypyrrole thin films: the electrolyte effect

    Science.gov (United States)

    Thombare, J. V.; Shinde, S. K.; Lohar, G. M.; Chougale, U. M.; Dhasade, S. S.; Dhaygude, H. D.; Relekar, B. P.; Fulari, V. J.

    2014-06-01

    Polypyrrole thin films are prepared by the potentiostatic mode of electrodeposition at +0:7 V versus a saturated calomel electrode (SCE). The polypyrrole films are prepared in the presence of different electrolytes such as: p-toluene sulphonic acid (PTS), oxalic acid and H2SO4. The prepared films are characterized by UV—vis absorption spectroscopy and normal reflectance measurements. The electrochemically synthesized films are semiconductor in nature. The band gap energy of polypyrrole thin films is found to be 1.95, 1.92 and 1.79 eV for H2SO4, oxalic acid and p-toluene sulphonic acid, respectively. The normal reflectance spectroscopy of polypyrrole films shows that the maximum reflectance is in the presence of p-toluene sulphonic acid; this is may be due to a more distinct microstructure than the others. The optical constants such as the extinction coefficient, refractive index, optical conductivity, etc. are calculated and studied with various electrolytes.

  12. Effects of discharge power on the structural and optical properties of TGZO thin films prepared by RF magnetron sputtering technique

    Science.gov (United States)

    Gu, Jin-hua; Lu, Zhou; Zhong, Zhi-you; Long, Lu; Long, Hao

    2016-05-01

    The transparent semiconductors of Ti and Ga-incorporated ZnO (TGZO) thin films were prepared by radio frequency (RF) magnetron sputtering onto glass substrates. The effects of discharge power on the physical properties of thin films are studied. Experimental results show that all nanocrystalline TGZO thin films possess preferential orientation along the (002) plane. The discharge power significantly affects the crystal structure and optical properties of thin films. When the discharge power is 200 W, the TGZO thin film has the optimal crystalline quality and optical properties, with the narrowest full width at half-maximum ( FWHM) of 1.76×10-3 rad, the largest average grain size of 82.4 nm and the highest average transmittance of 84.3% in the visible range. The optical gaps of thin films are estimated by the Tauc's relation and observed to increase firstly and then decrease with the increase of the discharge power. In addition, the optical parameters, including refractive index, extinction coefficient, dielectric function and dissipation factor of the thin films, are determined by optical characterization methods. The dispersion behavior of the refractive index is also analyzed using the Sellmeier's dispersion model.

  13. Determination and analysis of dispersive optical constants of CuIn3S5 thin films

    Science.gov (United States)

    Khemiri, N.; Sinaoui, A.; Kanzari, M.

    2011-04-01

    CuIn3S5 thin films were prepared from powder by thermal evaporation under vacuum (10-6 mbar) onto glass substrates. The glass substrates were heated from 30 to 200 °C. The films were characterized for their optical properties using optical measurement techniques (transmittance and reflectance). We have determined the energy and nature of the optical transitions of films. The optical constants of the deposited films were determined in the spectral range 300-1800 nm from the analysis of transmission and reflection data. The Swanepoel envelope method was employed on the interference fringes of transmittance patterns for the determination of variation of refractive index with wavelength. Wemple-Di Domenico single oscillator model was applied to determine the optical constants such as oscillator energy E0 and dispersion energy Ed of the films deposited at different substrate temperatures. The electric free carrier susceptibility and the ratio of the carrier concentration to the effective mass were estimated according to the model of Spitzer and Fan.

  14. Correlation between the structural and optical properties of ion-assisted hafnia thin films

    Science.gov (United States)

    Scaglione, Salvatore; Sarto, Francesca; Alvisi, Marco; Rizzo, Antonella; Perrone, Maria R.; Protopapa, Maria L.

    2000-03-01

    The ion beam assistance during the film growth is one of the most useful method to obtain dense film along with improved optical and structural properties. Afnia material is widely used in optical coating operating in the UV region of the spectrum and its optical properties depend on the production method and the physical parameters of the species involved in the deposition process. In this work afnia thin films were evaporated by an e-gun and assisted during the growth process. The deposition parameters, ion beam energy, density of ions impinging on the growing film and the number of arrival atoms from the crucible, have been related to the optical and structural properties of the film itself. The absorption coefficient and the refractive index were measured by spectrophotometric technique while the microstructure has been studied by means of x-ray diffraction. A strictly correlation between the grain size, the optical properties and the laser damage threshold measurements at 248 nm was found for the samples deposited at different deposition parameters.

  15. Effect of chlorine doping on electrical and optical properties of ZnO thin films

    Energy Technology Data Exchange (ETDEWEB)

    Chikoidze, E. [Groupe d' Etude de la Matiere Condensee (GEMaC), CNRS, Universite de Versailles-Saint-Quentin, 1 Place Aristide Briand. 92195 Meudon Cedex (France)], E-mail: Ekaterina.chikoidze@cnrs-bellevue.fr; Nolan, M.; Modreanu, M. [Tyndall National Institute, University College Cork, Lee Maltings, Prospect Row, Cork (Ireland); Sallet, V.; Galtier, P. [Groupe d' Etude de la Matiere Condensee (GEMaC), CNRS, Universite de Versailles-Saint-Quentin, 1 Place Aristide Briand. 92195 Meudon Cedex (France)

    2008-09-30

    Chlorine doped ZnO thin films were grown by metal-organic chemical vapour deposition (MOCVD) on sapphire and fused silica substrates. Chlorine is incorporated by substitution of oxygen and acts as a donor, leading to an increase of electron concentration. Transport properties were studied for ZnO thin films with different chlorine content. Hall effect measurements show an increase of electron carrier concentration and a decrease of electron mobility upon increasing the amount of chlorine incorporated in ZnO. The lowest resistivity {rho} = 3.6 x 10{sup -3} {omega} cm was obtained for layers deposited on sapphire substrate. UV-VIS-NIR spectroscopy has been used for the study of optical properties. For all samples, the optical transmittance in the visible range is greater than 80%. First principles computations were applied in order to examine the change in the band gap of ZnO with Cl doping.

  16. Structural, Optical and Electrical Properties of Thin Films Using Nebulizer Spray Pyrolysis Technique

    Directory of Open Access Journals (Sweden)

    R. Mariappan

    2013-01-01

    Full Text Available thin films have been deposited on glass substrates at substrate temperature 400°C through nebulizer spray pyrolysis technique. X-ray diffraction (XRD analysis shows that the films structure is changed from hexagonal to tetragonal. The high-resolution scanning electron microscopy (HRSEM studies reveal that the substrate is well covered with a number of grains indicating compact morphology with an average grain size 50–79 nm. Energy dispersive X-ray analysis (EDAX reveals the average ratio of the atomic percentage. Optical transmittance study shows the presence of direct transition. Band gap energy decreases from 3.33 to 2.87 eV with respect to the rise of Sn content. The electrical resistivity of the thin films was found to be 106 Ω-m.

  17. Morphology, surface topography and optical studies on electron beam evaporated MgO thin films

    Indian Academy of Sciences (India)

    A Chowdhury; J Kumar

    2006-10-01

    Electron beam evaporated thin films of MgO powder synthesized by burning of magnesium ribbon in air and sol–gel technique are studied for their microstructure (SEM), surface topography (AFM), and optical transmission behaviour (UV-visible spectroscopy). MgO thin films are shown to be either continuous or have mesh like morphology. The bar regions are believed to be of magnesium hydroxide formed due to absorption of moisture. Their AFM images exhibit columnar/pyramidal/truncated cone structure, providing support to the 3D Stranski–Krastanov model for film growth. Further, they are shown to have high transmittance (∼90%) in the wavelength range 400–600 nm, but absorb radiation below 350 nm substantially giving signature of a band transition.

  18. Correlations between switching of conductivity and optical radiation observed in thin graphite-like films

    Energy Technology Data Exchange (ETDEWEB)

    Lebedev, S.G. [Institute for Nuclear Research of Russian Academy of Sciences, 60th October Anniversary Prospect, 7a, 117312 Moscow (Russian Federation)], E-mail: lebedev@inr.ru; Yants, V.E. [Institute for Nuclear Research of Russian Academy of Sciences, 60th October Anniversary Prospect, 7a, 117312 Moscow (Russian Federation); Lebedev, A.S. [Lomonosov Moscow State University, Faculty of Computational Mathematics and Cybernetics GSP-2, Vorobievy Gory, 119992 Moscow (Russian Federation)

    2008-06-01

    The satisfactory explanation of anomalous electromagnetics in thin graphite-like carbon films till now is absent. The most comprehensible explanation may be the high-temperature superconductivity (HTSC). The pulse widths of spasmodic switching of electrical conductivity measured in this work in the graphite-like nanostructured carbon films, produced by methods of the carbon arc (CA) and chemical vapor deposition (CVD), are 1 and 2 ns correspondingly. Such fast switching completely excludes the thermal mechanism of the process. According to HTSC logic, in the time vicinity close to jump of electroresistance, it is necessary to expect the generation of optical radiation in the infrared (IR) range. This work presents the first results on registration of IR radiation caused by the sharp change of conductivity in thin graphite-like carbon films.

  19. Study of optical characteristics of tin oxide thin film prepared by sol–gel method

    Indian Academy of Sciences (India)

    Sumanta Kumar Tripathy; Bhabani Prasad Hota; P V Rajeswari

    2013-12-01

    In this paper, we present details of preparation of tin oxide (SnO2) thin film by sol–gel process. The film was synthesized on a glass (Corning 7059) plate by dip coating method. Here, we used tin (II) chloride as precursor and methanol as solvent. Optical characteristics and physical properties like refractive index, absorption coefficient and thickness of thin film were calculated from the study of transmission spectrum (wavelength vs transmission curve) data given by UV/VIS Spectrophotometer. Effect of number of coatings on transmittance and refractive index was also examined. It was observed that refractive index decreases with the number of coating and transmission value was more than 80% at wavelength greater than 450 nm in all cases. Structural analysis was studied by XRD measurement by using diffractometer which confirms tetragonal rutile structure of SnO2. Surface morphology was analysed from SEM micrograph and change in morphology on number of coat was discussed.

  20. Evaluating interfacial adhesion properties of Pt/Ti thin-film by using acousto-optic technique

    Energy Technology Data Exchange (ETDEWEB)

    Park, Hae Sung [Graduate School of Automotive Engineering, Seoul National University of Science and Technology, Seoul (Korea, Republic of); Didie, David; Yoshida, Sanichiro [Dept. of Chemistry and Physics, Southeastern Louisiana University, Hammond (United States); Park, Ik Keun [Dept. of Mechanical and Automotive Engineering, Seoul National University of Science and Technology, Seoul (Korea, Republic of)

    2016-06-15

    We propose an acousto-optic technique for the nondestructive evaluation of adhesion properties of a Pt/Ti thin-film interface. Since there are some problems encountered when using prevailing techniques to nondestructively evaluate the interfacial properties of micro/nano-scale thin-films, we applied an interferometer that combined the acoustic and optical methods. This technique is based on the Michelson interferometer but the resultant surface of the thin film specimen makes interference instead of the mirror when the interface is excited from the acoustic transducer at the driving frequency. The thin film shows resonance-like behavior at a certain frequency range, resulting in a low-contrast fringe pattern. Therefore, we represented quantitatively the change in fringe pattern as a frequency spectrum and discovered the possibility that the interfacial adhesion properties of a thin film can be evaluated using the newly proposed technique.

  1. Electronic excitation induced modifications of optical and morphological properties of PCBM thin films

    Science.gov (United States)

    Sharma, T.; Singhal, R.; Vishnoi, R.; Sharma, P.; Patra, A.; Chand, S.; Lakshmi, G. B. V. S.; Biswas, S. K.

    2016-07-01

    Phenyl C61 butyric acid methyl ester (PCBM) is a fullerene derivative and most commonly used in organic photovoltaic devices both as electron acceptor and transporting material due to high electron mobility. PCBM is easy to spin caste on some substrate as it is soluble in chlorobenzene. In this study, the spin coated thin films of PCBM (on two different substrate, glass and double sided silicon) were irradiated using 90 MeV Ni7+ swift heavy ion beam at low fluences ranging from 1 × 109 to 1 × 1011 ions/cm2 to study the effect of ion beam irradiation. The pristine and irradiated PCBM thin films were characterized by UV-visible absorption spectroscopy and fourier transform infrared spectroscopy (FTIR) to investigate the optical properties before and after irradiation. These thin films were further analyzed using atomic force microscopy (AFM) to investigate the morphological modifications which are induced by energetic ions. The variation in optical band gap after irradiation was measured using Tauc's relation from UV-visible absorption spectra. A considerable change was observed with increasing fluence in optical band gap of irradiated thin films of PCBM with respect to the pristine film. The decrease in FTIR band intensity of C60 cage reveals the polymerization reaction due to high energy ion impact. The roughness is also found to be dependent on incident fluences. This study throws light for the application of PCBM in organic solar cells in form of ion irradiation induced nanowires of PCBM for efficient charge carrier transportation in active layer.

  2. Dispersion model for optical thin films applicable in wide spectral range

    Science.gov (United States)

    Franta, Daniel; Nečas, David; Ohlídal, Ivan; Giglia, Angelo

    2015-09-01

    In the optics industry thin film systems are used to construct various interference devices such as antireflective coatings, high-reflectance mirrors, beam splitters and filters. The optical characterization of complex optical systems can not be performed by measurements only in the short spectral range in which the interference devices will be employed because the measured data do not contain sufficient information about all relevant parameters of these systems. The characterization of film materials requires the extension of the spectral range of the measurements to the IR region containing phonon absorption and to the UV region containing the electronic excitations. However, this leads to necessity of a dispersion model suitable for the description of the dielectric response in the wide spectral range. Such model must respect the physical conditions following from theory of dispersion, particularly Kramers-Kronig relations and integrability imposed by sum rules. This work presents the construction of a universal dispersion model composed from individual contributions representing both electronic and phonon excitations. The efficiency of presented model is given by the fact that all the contributions are described by analytical expressions. It is shown that the model is suitable for precise modeling of spectral dependencies of optical constants of a broad class of materials used in the optical industry for thin film systems such as MgF2, SiO2, Al2O3, HfO2, Ta2O5 and TiO2 in the spectral range from far IR to vacuum UV.

  3. Effect of ambient oxygen pressure on structural, optical and electrical properties of SnO2 thin films

    Institute of Scientific and Technical Information of China (English)

    ZHAO Songqing; ZHOU Yueliang; WANG Shufang; ZHAO Kun; HAN Peng

    2006-01-01

    Polycrystalline SnO2 thin films were deposited on sapphire substrates at 450℃ under different ambient oxygen pressures by pulsed laser deposition technique. The effect of ambient oxygen pressure on the structural, optical and electrical properties of SnO2 thin films was studied. X-ray diffraction and Hall measurements show that increasing the ambient oxygen pressure can improve crystallization of the films and decrease resistivity of the films. A violet emission peak centered at 409 nm was observed from photoluminescence measurements for SnO2 films under deposition ambient oxygen pressure above 5 Pa, which is related to the improvement of crystalline of the films.

  4. Optical constants of CH3NH3PbBr3 perovskite thin films measured by spectroscopic ellipsometry

    KAUST Repository

    Alias, Mohd Sharizal

    2016-07-14

    The lack of optical constants information for hybrid perovskite of CH3NH3PbBr3 in thin films form can delay the progress of efficient LED or laser demonstration. Here, we report on the optical constants (complex refractive index and dielectric function) of CH3NH3PbBr3 perovskite thin films using spectroscopic ellipsometry. Due to the existence of voids, the refractive index of the thin films is around 8% less than the single crystals counterpart. The energy bandgap is around 2.309 eV as obtained from photoluminescence and spectrophotometry spectra, and calculated from the SE analysis. The precise measurement of optical constants will be useful in designing optical devices using CH3NH3PbBr3 thin films.

  5. Effect of annealing treatment on the structural, optical, and electrical properties of Al-doped ZnO thin films

    Institute of Scientific and Technical Information of China (English)

    LI Li; FANG Liang; CHEN Ximing; LIU Gaobin; LIU Jun; YANG Fengfan; FU Guangzong; KONG Chunyang

    2007-01-01

    Highly conductive and transparent Al-doped ZnO (AZO) thin films were prepared from a zinc target containing Al (1.5 wt.%) by direct current (DC) and radio frequency (RF) reactive magnetron sputtering. The structural, optical, and electrical properties of AZO films as-deposited and submitted to annealing treatment (at 300 and 400 ℃, respectively) were characterized using various techniques. The experimental results show that the properties of AZO thin films can be further improved by annealing treatment. The crystallinity of ZnO films improves after annealing treatment. The transmittances of the AZO thin films prepared by DC and RF reactive magnetron sputtering are up to 80% and 85% in the visible region, respectively. The electrical resistivity of AZO thin films prepared by DC reactive magnetron sputtering can be as low as tering have better structural and optical properties than that prepared by DC reactive magnetron sputtering.

  6. Electromagnetic and optical characteristics of Nb5+-doped double-crossover and salmon DNA thin films

    Science.gov (United States)

    Babu Mitta, Sekhar; Reddy Dugasani, Sreekantha; Jung, Soon-Gil; Vellampatti, Srivithya; Park, Tuson; Park, Sung Ha

    2017-10-01

    We report the fabrication and physical characteristics of niobium ion (Nb5+)-doped double-crossover DNA (DX-DNA) and salmon DNA (SDNA) thin films. Different concentrations of Nb5+ ([Nb5+]) are coordinated into the DNA molecules, and the thin films are fabricated via substrate-assisted growth (DX-DNA) and drop-casting (SDNA) on oxygen plasma treated substrates. We conducted atomic force microscopy to estimate the optimum concentration of Nb5+ ([Nb5+]O = 0.08 mM) in Nb5+-doped DX-DNA thin films, up to which the DX-DNA lattices maintain their structures without deformation. X-ray photoelectron spectroscopy (XPS) was performed to probe the chemical nature of the intercalated Nb5+ in the SDNA thin films. The change in peak intensities and the shift in binding energy were witnessed in XPS spectra to explicate the binding and charge transfer mechanisms between Nb5+ and SDNA molecules. UV-visible, Raman, and photoluminescence (PL) spectra were measured to determine the optical properties and thus investigate the binding modes, Nb5+ coordination sites in Nb5+-doped SDNA thin films, and energy transfer mechanisms, respectively. As [Nb5+] increases, the absorbance peak intensities monotonically increase until ∼[Nb5+]O and then decrease. However, from the Raman measurements, the peak intensities gradually decrease with an increase in [Nb5+] to reveal the binding mechanism and binding sites of metal ions in the SDNA molecules. From the PL, we observe the emission intensities to reduce them at up to ∼[Nb5+]O and then increase after that, expecting the energy transfer between the Nb5+ and SDNA molecules. The current–voltage measurement shows a significant increase in the current observed as [Nb5+] increases in the SDNA thin films when compared to that of pristine SDNA thin films. Finally, we investigate the temperature dependent magnetization in which the Nb5+-doped SDNA thin films reveal weak ferromagnetism due to the existence of tiny magnetic dipoles in the Nb5+-doped

  7. Structural, Optical and Electrical Properties of Nanocrystalline Cuprous Oxide Thin Film Deposited By Chemical Method

    Directory of Open Access Journals (Sweden)

    Prakash Bansilal Ahirrao

    2010-06-01

    Full Text Available Cuprous oxide (Cu2O is an interesting p-type semiconductor material used in solar cell applications.  The Modified Chemical Bath Deposition (M-CBD method is suitable for growing thin multilayer structure due to low deposition temperature. This method does not require any sophisticated instrument and substrate need not to be conductive. The nanocrystalline Cu2O thin films were deposited on glass substrates by M-CBD method. The deposited films were characterized by different characterization techniques to study structural, surface morphological, optical and electrical properties. The structural studies show that, the formation of Cu2O thin films with an average crystallite size of 14 nm. Optical studies show a direct band gap 2.48 eV. The room temperature electrical resistivity is of the order of 1.3 kW-cm and activation energy 0.33 eV. The films exhibit p-type electrical conductivity as seen by thermo-emf measurements.

  8. Effect of Sb2O3-doped on optical absorption of ZnO thin film

    Institute of Scientific and Technical Information of China (English)

    CHANG Chun-rong; LI Zi-quan; XU Yun-yun

    2006-01-01

    Sb2O3 doped ZnO thin film was prepared by RF magnetron sputtering technique.The influence of Sb2O3 on the structure and the optical absorption of ZnO thin film was studied by XPS,XRD apparatuses and UV-Vis spectrophotometer.The results show that doped Sb2O3 has affected atomic and electronic structures,growth modes of crystal grains and optical absorption of ZnO.The element Sb exists in many forms in the film including transpositional atoms and compounds such as Sb2O3,Zn7Sb2O14 etc.ZnO crystal grains grow in mixing directions.The lattice relaxation and the content of second phases increase when more Sb is doped.The UVA absorption of doped ZnO thin film increases obviously.The ultraviolet absorption peak narrows,absorption intensity increases,the absorption margin becomes steep and moves to shorter wavelength of about 5 nm,and the visible absorption increases in some sort.

  9. Optical Waveguide Lightmode Spectroscopy (OWLS as a Sensor for Thin Film and Quantum Dot Corrosion

    Directory of Open Access Journals (Sweden)

    Jinke Tang

    2012-12-01

    Full Text Available Optical waveguide lightmode spectroscopy (OWLS is usually applied as a biosensor system to the sorption-desorption of proteins to waveguide surfaces. Here, we show that OWLS can be used to monitor the quality of oxide thin film materials and of coatings of pulsed laser deposition synthesized CdSe quantum dots (QDs intended for solar energy applications. In addition to changes in data treatment and experimental procedure, oxide- or QD-coated waveguide sensors must be synthesized. We synthesized zinc stannate (Zn2SnO4 coated (Si,TiO2 waveguide sensors, and used OWLS to monitor the relative mass of the film over time. Films lost mass over time, though at different rates due to variation in fluid flow and its physical effect on removal of film material. The Pulsed Laser Deposition (PLD technique was used to deposit CdSe QD coatings on waveguides. Sensors exposed to pH 2 solution lost mass over time in an expected, roughly exponential manner. Sensors at pH 10, in contrast, were stable over time. Results were confirmed with atomic force microscopy imaging. Limiting factors in the use of OWLS in this manner include limitations on the annealing temperature that maybe used to synthesize the oxide film, and limitations on the thickness of the film to be studied. Nevertheless, the technique overcomes a number of difficulties in monitoring the quality of thin films in-situ in liquid environments.

  10. Optical switching and photoluminescence in erbium-implanted vanadium dioxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Lim, Herianto, E-mail: mail@heriantolim.com; Stavrias, Nikolas; Johnson, Brett C.; McCallum, Jeffrey C. [School of Physics, University of Melbourne, Parkville, Victoria 3010 (Australia); Marvel, Robert E.; Haglund, Richard F. [Department of Physics and Astronomy, Vanderbilt University, Nashville, Tennessee 37240 (United States)

    2014-03-07

    Vanadium dioxide (VO{sub 2}) is under intensive consideration for optical switching due to its reversible phase transition, which features a drastic and rapid shift in infrared reflectivity. Classified as an insulator–to–metal transition, the phase transition in VO{sub 2} can be induced thermally, electrically, and optically. When induced optically, the transition can occur on sub-picosecond time scales. It is interesting to dope VO{sub 2} with erbium ions (Er{sup 3+}) and observe their combined properties. The first excited-state luminescence of Er{sup 3+} lies within the wavelength window of minimal transmission-loss in silicon and has been widely utilized for signal amplification and generation in silicon photonics. The incorporation of Er{sup 3+} into VO{sub 2} could therefore result in a novel photonic material capable of simultaneous optical switching and amplification. In this work, we investigate the optical switching and photoluminescence in Er-implanted VO{sub 2} thin films. Thermally driven optical switching is demonstrated in the Er-implanted VO{sub 2} by infrared reflectometry. Photoluminescence is observed in the thin films annealed at ∼800 °C or above. In addition, Raman spectroscopy and a statistical analysis of switching hysteresis are carried out to assess the effects of the ion implantation on the VO{sub 2} thin films. We conclude that Er-implanted VO{sub 2} can function as an optical switch and amplifier, but with reduced switching quality compared to pure VO{sub 2}.

  11. Optical and thermal properties of azo derivatives of salicylic acid thin films

    Science.gov (United States)

    Ghoneim, M. M.; El-Ghamaz, N. A.; El-Sonbati, A. Z.; Diab, M. A.; El-Bindary, A. A.; Serag, L. S.

    2015-02-01

    N-acryloyl-4-aminosalicylic acid (4-AMSA), monomer (HL) and 5-(4‧-alkyl phenylazo)-N-acryloyl-4-aminosalicylic acid (HLn) are synthesized and characterized with various physico-chemical techniques. Thin films of 5-(4‧-alkyl phenylazo)-N-acryloyl-4-aminosalicylic acid (HLn) are prepared by spin coating technique. The X-ray diffraction (XRD) patterns of 4-aminosalicylic acid (4-ASA) and its derivatives are investigated in powder and thin film forms. Thermal properties of the compounds are investigated by thermogravemetric analysis (TGA). The optical energy gap and the type of optical transition are investigated in the wavelength range (200-2500 nm) for 4-ASA, HL and HLn. The values of fundamental energy gap (Eg) are in the range 3.60-3.69 eV for all compounds and the type of optical transition is found to be indirect allowed. The onset energy gap Eg∗ appeared only for azodye compounds is found to be in the range 0.95-1.55 eV depending on the substituent function groups. The refractive index, n, shows a normal dispersion in the wavelength range 650-2500 nm, while shows anomalous dispersion in the wavelength rang 200-650 nm. The dispersion parameters ε∞, εL, Ed, Eo and N /m∗ are calculated. The photoluminescence phenomena (PL) appear for thin films of 4-ASA and its derivatives show three main emission transitions.

  12. Effect of heat treatment on microstructural and optical properties of CBD grown Al-doped ZnO thin films

    Energy Technology Data Exchange (ETDEWEB)

    Chandramohan, R., E-mail: rathinam.chandramohan@gmail.com [Department of Physics, Sree Sevugan Annamalai College, College Road, Devakottai 630303 (India); Vijayan, T.A. [Department of Physics, Sree Sevugan Annamalai College, College Road, Devakottai 630303 (India); Arumugam, S.; Ramalingam, H.B. [Department of Physics, Government Arts College, Udumalpet 642126 (India); Dhanasekaran, V.; Sundaram, K.; Mahalingam, T. [Department of Physics, Alagappa University, Karaikudi 630003 (India)

    2011-02-15

    Research highlights: > Effect of annealing temperature on Al-doped ZnO thin films. > Microstructural properties of Al-doped ZnO thin films. > Optical constants are found to increase with increase of heat treatment. - Abstract: Investigations on the effect of annealing temperature on the structural, optical properties and morphology of Al-doped ZnO thin films deposited on glass substrate by chemical bath deposition have been carried out. X-ray diffraction studies revealed that deposited films are in polycrystalline nature with hexagonal structure along the (0 0 2) crystallographic plane. Microstructural properties of films such as crystallite size, texture coefficient, stacking fault probability and microstrain were calculated from predominant (0 0 2) diffraction lines. The UV-Vis-NIR spectroscopy studies revealed that all the films have high optical transmittance (>60%) in the visible range. The optical band gap values are found to be in the range of 3.25-3.31 eV. Optical constants have been estimated and the values of n and k are found to increase with increase of heat treatment. The films have increased transmittance with increase of heat treatment. Al-doped ZnO thin films fabricated by this simple and economic chemical bath deposition technique without using any carrier gas are found to be good in structural and optical properties which are desirable for photovoltaic applications. Scanning electron microscopic images revealed that the hexagonal shaped grains that occupy the entire surface of the film with its near stoichiometric composition.

  13. Electronic structure, structural and optical properties of thermally evaporated CdTe thin films

    OpenAIRE

    S Lalitha; Karazhanov, S. Zh.; Ravindran, P.; Senthilarasu, S.; Sathyamoorthy, R.; Janabergenov, J.

    2006-01-01

    Thin films of CdTe were deposited on glass substrates by thermal evaporation. From the XRD measurements itis found that the films are of zinc-blende-type structure. Transmittance, absorption, extinction, and refractive coefficients are measured. Electronic structure, band parameters and optical spectra of CdTe were calculated from ab initio studies within the LDA and LDA+U approximations. It is shown that LDA underestimates the band gap, energy levels of the Cd-4d states, s-d coupling and ban...

  14. Optical characterization of Sol-Gel ZnO:Al thin films

    OpenAIRE

    Ivanova, T.; Harizanova, A.; Koutzarova, T.; Vertruyen, Bénédicte

    2016-01-01

    This paper presents a sol-gel technological process for preparing thin films of ZnO and ZnO:Al. The effect of annealing treatments (500, 600, 700 and 800 oC) on their properties was studied. The structural evolution with the temperature was investigated by using X-Ray diffraction (XRD). Fourier Transform Infrared (FTIR) and UV-VIS spectrophotometry were applied to characterizing the films’ vibrational and optical properties. The ZnO and ZnO:Al films possessed a polycrystalline structure. The ...

  15. Structural, Optical and Electrochromic Properties of Sol–Gel V2O5 Thin Films

    OpenAIRE

    2003-01-01

    Vanadium pentoxide thin films are prepared by the sol–gel route by dissolving V2O5 powder (99.5% purity) in H2O2 solution. The solution is spin-coated on glass substrates for optical (UV–VIS–NIR) and XRD analysis, and on ITOcoated glass substrates for electrochromic measurements. The samples are then annealed at 150°C for 1 hour. The resulting films have a yellow-orange color, typical of polycrystalline V2O5. XRD measurements have shown that after annealing in air at 400°C the structur...

  16. Structural and optical characteristics of SnS thin film prepared by SILAR

    OpenAIRE

    2015-01-01

    SnS thin films were grown on glass substrates by a simple route named successive ion layer adsorption and reaction (SILAR) method. The films were prepared using tin chloride as tin (Sn) source and ammonium sulfide as sulphur (S) source. The structural, optical and morphological study was done using XRD, FESEM, FT-IR and UV-Vis spectrophotometer. XRD measurement confirmed the presence of orthorhombic phase. Particle size estimated from XRD was about 45 nm which fitted well with the FESEM measu...

  17. Reversible, electrical and optical switching on silver 3-phenyl-1-ureidonitrile complex thin films

    Institute of Scientific and Technical Information of China (English)

    张昊旭; 时东霞; 宋延林; 刘虹雯; 侯士敏; 薛增泉; 高鸿钧

    2002-01-01

    We report on the reversible, electrical and optical switching on silver 3-phenyl-l-ureidonitrile complex thin films.The films can switch from a high impedance state to a low impedance state with an applied electric field at the thresholdof 3.5 × 107V/m. Furthermore, the films can be switched back to the original state by treating the samples at about80℃. The optical recording is fulfilled using a semiconductor laser with a wavelength of 780nm. Erasure can beaccomplished by bulk heating or by the laser working with the power beneath the threshold. No loss of the organic wasfound in the experiments. This material may have a potential application in ultrahigh data density storage.

  18. Microstructure parameters and optical properties of cadmium ferrite thin films of variable thickness

    Science.gov (United States)

    Shaaban, E. R.

    2014-06-01

    CdFe2O4 thin films of different thicknesses were deposited onto glass substrates by the thermal evaporation technique. Their structural characteristics were studied by X-ray diffraction (XRD). The microstructure parameters, crystallite size, and microstrain were calculated. It is observed that both the crystallite size increases and microstrain increase with increasing with the film thickness. The fundamental optical parameters like absorption coefficient and optical band gap are calculated in the strong absorption region of transmittance and reflectance spectrum. The refractive indices have been evaluated in terms of the envelope method, which has been suggested by Swanepoel in the transparent region. The refractive index can be extrapolated by the Cauchy dispersion relationship over the whole spectra range, which extended from 400 to 2500 nm. The refractive index, n, increases on increasing the film thickness up to 733 nm and the variation of n with higher thickness lies within the experimental errors.

  19. Optical and structural properties of CsI thin film photocathode

    Science.gov (United States)

    Triloki; Rai, R.; Singh, B. K.

    2015-06-01

    In the present work, the performance of a cesium iodide thin film photocathode is studied in detail. The optical absorbance of cesium iodide films has been analyzed in the spectral range from 190 nm to 900 nm. The optical band gap energy of 500 nm thick cesium iodide film is calculated from the absorbance data using a Tauc plot. The refractive index is estimated from the envelope plot of transmittance data using Swanepoel's method. The absolute quantum efficiency measurement has been carried out in the wavelength range from 150 nm to 200 nm. The crystallographic nature and surface morphology are investigated by X-ray diffraction and transmission electron microscopy techniques. In addition, the elemental composition result obtained by energy dispersive X-ray analysis is also reported in the present work.

  20. Optically transparent magnetic and electrically conductive Fe-Cr-Zr ultra-thin films

    Energy Technology Data Exchange (ETDEWEB)

    Louzguine-Luzgin, D.V.; Ketov, S.V.; Mizukami, S. [Advanced Institute for Materials Research (WPI-AIMR), Tohoku University, Sendai (Japan); Orava, J. [Advanced Institute for Materials Research (WPI-AIMR), Tohoku University, Sendai (Japan); Department of Materials Science and Metallurgy, University of Cambridge (United Kingdom)

    2014-05-15

    The transparent magnetic thin films having a nominal composition of Fe{sub 75}Cr{sub 15}Zr{sub 10} and containing nanocrystalline BCC Fe particles embedded in a metallic glassy matrix were deposited by a magnetron sputtering technique. The nanoparticles were homogeneously distributed in the glassy matrix, which results in the appearance of ferromagnetic properties. The phase composition and microstructure of the films were examined by X-ray diffractometry and scanning electron microscopy equipped with EDX spectroscopy. The magneto-optical properties of the obtained films were also studied by magnetic circular dichroism (MCD) method. The material obtained possesses three key properties: it is optically transparent in the visible-light range as well as electrically conductive and it shows ferromagnetism, which all of these are often mutually alternative. (copyright 2014 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  1. Microstructural, optical and photocatalytic properties of CdS doped TiO2 thin films

    Science.gov (United States)

    Mohamed, S. H.; Shaaban, E. R.

    2011-11-01

    CdS doped TiO2 thin films (with CdS content=0, 3, 6, 9 and 12 at%) were grown on glass substrates. The X-ray diffraction analysis revealed that the films are polycrystalline of monoclinic TiO2 structure. The microstructure parameters of the films such as crystallite size (Dν) and microstrain (e) are calculated. Both the crystallites size and the microstrain are decreased with increasing CdS content. The optical constants have been determined in terms of Murmann's exact equations. The refractive index and extinction coefficient are increased with increasing CdS content. The optical band gap is calculated in the strong absorption region. The possible optical transition in these films is found to be an allowed direct transition. The values of Egopt are found to decrease as the CdS content increased. The films with 3 at% CdS content have better decomposition efficiency than undoped TiO2. The films with 6 at% and 9 at% CdS content have decomposition efficiency comparable to that of undoped TiO2, although they have lower band gap. The CdS doped TiO2 could have a better impact on the decomposing of organic wastes.

  2. Structural and optical properties of electron beam evaporated CdSe thin films

    Indian Academy of Sciences (India)

    N J Suthan Kissinger; M Jayachandran; K Perumal; C Sanjeevi Raja

    2007-12-01

    Thin films of cadmium selenide (CdSe) as a semiconductor is well suited for opto-electronic applications such as photo detection or solar energy conversion, due to its optical and electrical properties, as well as its good chemical and mechanical stability. In order to explore the possibility of using this in optoelectronics, a preliminary and thorough study of optical and structural properties of the host material is an important step. Based on the above view, the structural and optical properties of CdSe films have been studied thoroughly in the present work. The host material, CdSe film, has been prepared by the physical vapour deposition method of electron beam evaporation (PVD: EBE) technique under a pressure of 5 × 10-5 mbar. The structural properties have been studied by XRD technique. The hexagonal structure with a preferred orientation along the (0 0 2) direction of films has been confirmed by the X-ray diffraction analysis. The films have been analysed for optical band gap and absorbed a direct intrinsic band gap of 1.92 eV.

  3. Optical properties of tungsten oxide thin films by non-reactive sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Acosta, M., E-mail: milenis@yahoo.co [Laboratorio de Ciencia de Materiales, Facultad de Ingenieria, Universidad Autonoma de Yucatan, Avenida Industrias No Contaminantes S/N, A.P. 150, Cordemex, Merida (Mexico); Gonzalez, D.; Riech, I. [Laboratorio de Ciencia de Materiales, Facultad de Ingenieria, Universidad Autonoma de Yucatan, Avenida Industrias No Contaminantes S/N, A.P. 150, Cordemex, Merida (Mexico)

    2009-07-31

    Tungsten oxide thin films were grown on glass substrates by RF sputtering at room temperature using a tungsten trioxide target for several values of the argon pressure (P{sub Ar}). The structural and morphological properties of these films were studied using X-ray diffraction and atomic force microscopy. The as-deposited films were amorphous irrespective of the argon pressure, and crystallized in a mixture of hexagonal and monoclinic phases after annealing at a temperature of 350 {sup o}C in air. Surface-roughness increased by an order of magnitude (from 1 nm to 20 nm) after thermal treatment. The argon pressure, however, had a strong influence on the optical properties of the films. Three different regions are clearly identified: deep blue films for P{sub Ar} {<=} 2.67 Pa with low transmittance values, light blue films for 2.67 Pa < P{sub Ar} < 6 Pa with intermediate transmittance values and transparent films for P{sub Ar} {>=} 6 Pa with high transmittance values. We suggest that the observed changes in optical properties are due to an increasing number of oxygen vacancies as the growth argon pressure decreases.

  4. Handbook of thin film technology

    CERN Document Server

    Frey, Hartmut

    2015-01-01

    “Handbook of Thin Film Technology” covers all aspects of coatings preparation, characterization and applications. Different deposition techniques based on vacuum and plasma processes are presented. Methods of surface and thin film analysis including coating thickness, structural, optical, electrical, mechanical and magnetic properties of films are detailed described. The several applications of thin coatings and a special chapter focusing on nanoparticle-based films can be found in this handbook. A complete reference for students and professionals interested in the science and technology of thin films.

  5. On the optical and electrical properties of rf and a.c. plasma polymerized aniline thin films

    Indian Academy of Sciences (India)

    U S Sajeev; C Joseph Mathai; S Saravanan; Rajeev R Ashokan; S Venkatachalam; M R Anantharaman

    2006-04-01

    Polyaniline is a widely studied conducting polymer and is a useful material in its bulk and thin film form for many applications, because of its excellent optical and electrical properties. Pristine and iodine doped polyaniline thin films were prepared by a.c. and rf plasma polymerization techniques separately for the comparison of their optical and electrical properties. Doping of iodine was effected in situ. The structural properties of these films were evaluated by FTIR spectroscopy and the optical band gap was estimated from UV-vis-NIR measurements. Comparative studies on the structural, optical and electrical properties of a.c. and rf polymerization are presented here. It has been found that the optical band gap of the polyaniline thin films prepared by rf and a.c. plasma polymerization techniques differ considerably and the band gap is further reduced by in situ doping of iodine. The electrical conductivity measurements on these films show a higher value of electrical conductivity in the case of rf plasma polymerized thin films when compared to the a.c. plasma polymerized films. Also, it is found that the iodine doping enhanced conductivity of the polymer thin films considerably. The results are compared and correlated and have been explained with respect to the different structures adopted under these two preparation techniques.

  6. Influence of annealing on the optical properties of vacuum deposited silver thin films

    Science.gov (United States)

    Gnanadurai, P.; Sivaraja, N.; Soundrarajan, N.; Vijayan, C.

    2015-06-01

    Thin Silver films of thickness 15nm were prepared by thermal evaporation on well cleaned glass substrates at room temperature at a pressure of 2×10-5 mbar with the deposition rate of 0.01À/sec and annealed in air for an hour at temperatures between 300°c and 400°c. The prepared films were characterized by X-ray diffraction (XRD), UV-visible spectroscopy and AFM. The mean grain size of the film at different annealing temperatures was determined by the X-ray diffraction pattern by using Scheer's formula. It is found that from absorbance studies surface Plasmon peak position decreases as the annealing temperature increases and blue shifted. And also from transmittance studies the thermal effect of silver film strongly affects the optical transmittance. From AFM studies the average particle size and RMS surface roughness increase with increase of annealing temperatures.

  7. Study on Optical Properties of Tin Oxide Thin Film at Different Annealing Temperature

    Directory of Open Access Journals (Sweden)

    Saturi Baco

    2012-07-01

    Full Text Available Tin Oxide (SnO2 thin film is one of the important transparent conducting oxides (TCOs and applied in various fields such as in solar cells, optoelectronic devices, heat mirror, gas sensors, etc due to its electrical and optical transparency in visible light spectrum. In this paper, we presented the optical properties of tin oxide thin film at four different annealing temperatures (373 K, 437 K, 573 K and 673 K prepared by radio frequency sputtering technique. The optical characteristic of these films was investigated using the UV-VIS 3101-PC Spectrophotometer. From this study, all samples exhibit high transmittance more than 70% in the visible light spectrum. Sample annealed at 473 K shows the maximum transmittance which is 87%. Refractive index, n were in the range of 2.33 – 2.80 at  = 550 nm and enhanced with the annealing temperature. However the extinction of coefficient, k was found to be very small. The optical band-edge absorption coefficients were found in the range of 104 – 105cm-1. The energy gap value was decreased with increasing annealing temperature and the type of photon transition was allowed direct transition.

  8. Ultrafast electron diffraction studies of optically excited thin bismuth films

    Energy Technology Data Exchange (ETDEWEB)

    Rajkovic, Ivan

    2008-10-21

    This thesis contains work on the design and the realization of an experimental setup capable of providing sub-picosecond electron pulses for ultrafast electron diffraction experiments, and performing the study of ultrafast dynamics in bismuth after optical excitation using this setup. (orig.)

  9. Optical properties of swift ion beam irradiated CdTe thin films

    Energy Technology Data Exchange (ETDEWEB)

    Chandramohan, S. [PG and Research Department of Physics, Kongunadu Arts and Science College, Coimbatore, Tamilnadu 641029 (India); Sathyamoorthy, R. [PG and Research Department of Physics, Kongunadu Arts and Science College, Coimbatore, Tamilnadu 641029 (India)], E-mail: rsathya59@yahoo.co.in; Sudhagar, P. [PG and Research Department of Physics, Kongunadu Arts and Science College, Coimbatore, Tamilnadu 641029 (India); Kanjilal, D.; Kabiraj, D.; Asokan, K. [Inter-University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi 110067 (India)

    2008-06-30

    This paper reports the effect of swift (80 MeV) oxygen (O{sup +6}) ion irradiation on the optical properties of CdTe thin films grown by conventional thermal evaporation on glass substrates. The films are found to be slightly Te-rich in composition and irradiation results no change in the elemental composition. The optical constants such as refractive index (n), absorption coefficient ({alpha}) and the optical band gap energy show significant variation in their values with increase in ion fluence. Upon irradiation the band gap energy decreased from a value of 1.53 eV to 1.46 eV whereas the refractive index (n) increased from 2.38 to 3.12 at {lambda} = 850 nm. The photoluminescence spectrum shows high density of native defects whose density strongly depends on the ion fluence. Both analyses indicate considerable defect production after swift ion beam irradiation.

  10. Effect of thickness on surface morphology, optical and humidity sensing properties of RF magnetron sputtered CCTO thin films

    Science.gov (United States)

    Ahmadipour, Mohsen; Ain, Mohd Fadzil; Ahmad, Zainal Arifin

    2016-11-01

    In this study, calcium copper titanate (CCTO) thin films were deposited on ITO substrates successfully by radio frequency (RF) magnetron sputtering method in argon atmosphere. The CCTO thin films present a polycrystalline, uniform and porous structure. The surface morphology, optical and humidity sensing properties of the synthesized CCTO thin films have been studied by X-ray diffraction (XRD), atomic force microscopy (AFM), field emission scanning electron microscopy (FESEM), energy-dispersive X-ray spectroscopy (EDX), UV-vis spectrophotometer and current-voltage (I-V) analysis. XRD and AFM confirmed that the intensity of peaks and pore size of CCTO thin films were enhanced by increasing the thin films. Tauc plot method was adopted to estimate the optical band gaps. The surface structure and energy band gaps of the deposited films were affected by film thickness. Energy band gap of the layers were 3.76 eV, 3.68 eV and 3.5 eV for 200 nm, 400 nm, and 600 nm CCTO thin films layer, respectively. The humidity sensing properties were measured by using direct current (DC) analysis method. The response times were 12 s, 22 s, and 35 s while the recovery times were 500 s, 600 s, and 650 s for 200 nm, 400 nm, and 600 nm CCTO thin films, respectively at humidity range of 30-90% relative humidity (RH).

  11. Effect of stress on optical band gap of ZnO thin films with substrate temperature by spray pyrolysis

    Energy Technology Data Exchange (ETDEWEB)

    Rao, T. Prasada, E-mail: prasadview@gmail.co [Department of physics, National Institute of Technology, Tiruchirappalli 620015 (India); Kumar, M.C. Santhosh, E-mail: santhoshmc@yahoo.co [Department of physics, National Institute of Technology, Tiruchirappalli 620015 (India); Angayarkanni, S. Anbumozhi; Ashok, M. [Department of physics, National Institute of Technology, Tiruchirappalli 620015 (India)

    2009-10-19

    Zinc oxide (ZnO) thin films have been deposited with various substrate temperatures by spray pyrolysis method onto glass substrates. The effects of substrate temperature on the crystallization behavior and optical properties of the films have been studied. The evolution of strain and stress effects in ZnO thin films on glass substrate has been studied using X-ray diffraction. The films deposited at low substrate temperature have large compressive stress of 1.77 GPa, which relaxed to 1.47 GPa as the substrate temperature increased to 450 deg. C. Optical parameters such as optical transmittance, reflectance, dielectric constant, refractive index and energy band gap have been studied and discussed with respect to substrate temperature. All films exhibit a transmittance of about 85% in the visible region. It was found that the compressive stress in the films causes a decrease in the optical band gap.

  12. Optical Constant and Electrical Resistivity of Annealed Sn3Sb2S6 Thin Films

    Institute of Scientific and Technical Information of China (English)

    Y.Fadhli; A.Rabhi; M.Kanzari

    2016-01-01

    In this study,we report the annealing effects on the physical properties of Sn3Sb2S6 thin films.Sn3Sb2S6 thin films were prepared onto non-heated glass substrates via thermal evaporation technique.The as-deposited films were annealed in air for 1 h in the temperature range from 100 to 300 ℃.X-ray diffraction results show that the crystallinity of the thin films increased after annealing.The microstructure parameters crystallite size,dislocation density,lattice strain and stacking fault probability were calculated.The optical properties were obtained from the analysis of the experimental recorded transmittance and reflectance spectral data over the wavelength range 300-1800 nm.High absorption coefficient (105 cm-1) reached to thevisible and near-IR spectral range.A decrease in optical band gap from 1.92 to 1.71 eV by increasing the air annealing temperature was observed.Oscillator energy Eo and dispersion energy Ed of the films after annealing were estimated according to the model of Wemple-DiDomenico single oscillator.Spitzer-Fan model was applied to determine the electron free carrier susceptibility and the ratio of carrier concentration to the effective mass.The layers annealed at temperatures >150 ℃ undergo abrupt changes in their electrical properties and exhibit a resistive hysteresis behavior.These properties confer to the material interest perspectives for its application in diverse advanced technologies such as photovoltaic applications and optical storage.

  13. Synthesis and characterization of azo-containing organometallic thin films for all optical switching applications

    Science.gov (United States)

    Gatri, R.; Fillaut, J.-L.; Mysliwiec, J.; Szukalski, A.; Bartkiewicz, S.; El-Ouazzani, H.; Guezguez, I.; Khammar, F.; Sahraoui, B.

    2012-05-01

    Novel photoresponsive materials based on azo-containing bifunctional ruthenium-acetylides have been synthesized. All optical switching based on the Optical Kerr Effect in the organometallic thin films based on ruthenium(II) acetylides containing an azobenzene moiety as a photochromic unit in the main pi-conjugated system dispersed in a poly(methyl methacrylate) matrix has been observed. The excitation beam was delivered from a picosecond laser at wavelength 532 nm while dynamics of induced sample birefringence was probed by a non-absorbed linearly polarized beam of cw He-Ne laser (632.8 nm). The influence of ruthenium part on dynamics of molecular motions has been shown.

  14. All-optical subdiffraction multilevel data encoding onto azo-polymeric thin films

    Science.gov (United States)

    Savoini, Matteo; Biagioni, Paolo; Duò, Lamberto; Finazzi, Marco

    2009-03-01

    By exploiting photo-induced reorientation in azo-polymer thin films, we demonstrate all-optical polarization-encoded information storage with a scanning near-field optical microscope. In the writing routine, 5-level bits are created by associating different bit values to different birefringence directions, induced in the polymer after illumination with linearly polarized light. The reading routine is then performed by implementing polarization-modulation techniques on the same near-field microscope, in order to measure the encoded birefringence direction.

  15. Optical Characterization of Organic Light-Emitting Thin Films in the Ultraviolet and Visible Spectral Ranges

    CERN Document Server

    Montereali, R M; Nichelatti, E; Di Pompeo, F; Segreto, E; Canci, N; Cavanna, F

    2012-01-01

    The spectrophotometric characterization of high efficiency, optically-active samples such as light-emitting organic bulks and thin films can be problematic because their broad-band luminescence is detected together with the monochromatic transmitted and reflected signals, hence perturbing measurements of optical transmittance and reflectance at wavelengths within the photoexcitation band. As a matter of fact, most commercial spectrophotometers apply spectral filtering before the light beam reaches the sample, not after it. In this Report, we introduce and discuss the method we have developed to correct photometric spectra that are perturbed by photoluminescence.

  16. Ferroelectric BaTiO3 thin-film optical waveguide modulators

    OpenAIRE

    Petraru, A.; Schubert, J; Schmid, M.; Buchal, Ch.

    2002-01-01

    High-quality BaTiO3 epitaxial thin films on MgO substrates have been grown by pulsed-laser deposition. Both, c-axis and a-axis BaTiO3 orientations were studied. Mach-Zehnder optical waveguide modulators with a fork angle of 1.7degrees have been fabricated by ion-beam etching. The waveguides are of the ridge type, the BaTiO3 thickness is 1 mum, the ridge step 50 nm, and the width 2 mum. Light was coupled into the waveguides from optical fibers. The BaTiO3 waveguide propagation losses are 2-3 d...

  17. Determination of layer thickness and optical constants of thin films by using a modified pattern search method.

    Science.gov (United States)

    Miloua, R; Kebbab, Z; Chiker, F; Sahraoui, K; Khadraoui, M; Benramdane, N

    2012-02-15

    We propose the use of a pattern search optimization technique in combination with a seed preprocessing procedure to determine the optical constants and thickness of thin films using only the transmittance spectra. The approach is quite flexible, straightforward to implement, and efficient in reaching the best fitting. We demonstrate the effectiveness of the method in extracting optical constants, even when the films are not displaying interference fringes. Comparison to a real-coded genetic algorithm shows that the modified pattern search is fast, almost accurate, and does not need any parameter adjustments. The approach is successfully applied to extract the thickness and optical constants of spray pyrolyzed nanocrystalline CdO thin films.

  18. Dielectric and optical properties of sputtered thin films

    Science.gov (United States)

    Tanguay, A. R., Jr.

    1984-07-01

    Of critical importance to the eventual performance of numerous coherent optical image processors and highly parallel computers is the development of a high speed, recyclable, linear, high resolution, selectively erasable image storage transducer operable in nearly real time. Applications for such a transducer abound, including incoherent-to-coherent conversion, pattern recognition and image feature extraction, level slicing, edge enhancement, low light level image integration, scratch pad memory, and page composition for data entry in holographic memory systems. In response to this need, a wide variety of candidate devices have been proposed in the past ten years, based on photochromic, liquid crystal, photorefractive, magnetooptic, electrooptic, deformable membrane, thermoplastic, photodichroic, and ambidextrous effects in numerous configurations. The device category comprised of Electrooptic Spatial Light Modulators contains a number of leading candidates, due to a combination of wide dynamic range, high sensitivity, intermediate storage time, relative simplicity of construction and operation, and long term durability. This category includes the Pockels Readout Optical Modulator or PROM, a Soviet modification of th PROM called the PRIZ, the Microchannel Spatial Light Modulator, the TITUS and photo-TITUS, and the Photorefractive Incoherent-to-Coherent Optical Converter.

  19. Structural and Optical Properties of Mg Doped ZnO Thin Films Deposited by DC Magnetron Sputtering

    Directory of Open Access Journals (Sweden)

    A.Sh. Asvarov

    2016-11-01

    Full Text Available This paper reports the growth and characterization of transparent magnesium doped zinc oxide (ZnO:Mg thin films prepared on glass substrates by dc magnetron sputtering. The effects of the Mg concentrations (0, 1 and 5 at % and working gas compositions (pure Ar and Ar-O2 mixture on the structural and optical properties of the ZnO:Mg thin films were investigated. The experiment results showed that the ZnO and ZnO:Mg thin films are polycrystalline with a hexagonal wurtzite structure exhibiting a preferred (002 crystal plane orientation. The results indicated that the crystallinity of ZnO:Mg thin films was significantly affected by both Mg-doping and the woking gas composition. Optical studies revealed that the optical band gap increases with Mg concentration.

  20. Thin film ceramic thermocouples

    Science.gov (United States)

    Gregory, Otto (Inventor); Fralick, Gustave (Inventor); Wrbanek, John (Inventor); You, Tao (Inventor)

    2011-01-01

    A thin film ceramic thermocouple (10) having two ceramic thermocouple (12, 14) that are in contact with each other in at least on point to form a junction, and wherein each element was prepared in a different oxygen/nitrogen/argon plasma. Since each element is prepared under different plasma conditions, they have different electrical conductivity and different charge carrier concentration. The thin film thermocouple (10) can be transparent. A versatile ceramic sensor system having an RTD heat flux sensor can be combined with a thermocouple and a strain sensor to yield a multifunctional ceramic sensor array. The transparent ceramic temperature sensor that could ultimately be used for calibration of optical sensors.

  1. Optical switching properties of Pd-Ni thin-film top-capped switchable mirrors

    Science.gov (United States)

    Zhang, Xiao-Li; Bao, Shan-Hu; Xin, Yun-Chuan; Cao, Xun; Jin, Ping

    2015-09-01

    Switchable mirrors based on magnesium-nickel alloy thin films capped with catalytic Pd-Ni alloy thin films were prepared by a DC magnetron sputtering method. Their composition, structure and surface morphology were studied by XPS, XRD and AFM. Herein, the optical switching properties and durability of the switchable mirrors were investigated by varying the Ni content in the Pd-Ni alloys. Comparing pure Pd catalyst with Pd-Ni top-capped switchable mirrors, the latter show better hydrogenation and dehydrogenation kinetics, and the speed of hydrogen desorption is obviously improved with increasing Ni content in the Pd-Ni alloy. The Pd-Ni capped switchable mirrors also have better optical switching durability. The catalytic Pd layer with the addition of Ni does not influence the transmittance (hydride state) and reflectance (metallic state) of the switchable mirrors. In addition, replacing Pd with Pd-Ni alloy decreases the cost of the switchable mirrors: employing nickel in the alloy Pd89.2Ni10.8 can save about 11% use of Pd. Therefore, the Pd-Ni alloy can provide a cheaper catalytic thin film, and it is expected to have applications in energy-saving windows, hydrogen sensors and hydrogen storage materials.

  2. Raman scattering, electrical and optical properties of fluorine-doped tin oxide thin films with (200) and (301) preferred orientation

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Chang-Yeoul, E-mail: cykim15@kicet.re.kr [Nano-Convergence Intelligence Material Team, Korea Institute of Ceramic Eng. and Tech., Gasan-digtial-ro 10 Gil 77 Geumcheon-gu, 153-801 Seoul (Korea, Republic of); Riu, Doh-Hyung [Dept. of New Material Sci. and Eng., Seoul National University of Technology, Seoul (Korea, Republic of)

    2014-12-15

    (200) and (301) preferred oriented fluorine-doped tin oxide (FTO) thin films were fabricated by spray pyrolysis of ethanol-added and water-based FTO precursor solutions, respectively. (200) oriented FTO thin film from ethanol-added solution shows the lower electrical resistivity and visible light transmission than (301) preferred thin film from water-based solution. It is due to the higher carrier concentration and electron mobility in (200) oriented crystals, that is, the lower ionized impurity scattering. The higher electron concentration is related to the higher optical band gap energy, the lower visible light transmission, and the higher IR reflection. For (301) preferred FTO thin films from water-based solution, the lower carrier concentration and electron mobility make the higher electrical resistivity and visible light transmission. Raman scattering analysis shows that IR active modes prominent in (200) oriented FTO thin film are related with the lower electrical resistivity. - Highlights: • We coated fluorine-doped tin oxide thin films with preferred orientation of (200) and (301). • We examine changes in the level of electrical and optical properties with the orientation. • (200) preferred orientation showed lower electrical resistivity and optical transmittance. • (200) oriented thin films have higher electron concentrations that are related with IR active modes.

  3. Electrical and optical properties of CZTS thin films prepared by SILAR method

    Directory of Open Access Journals (Sweden)

    J. Henry

    2016-03-01

    Full Text Available In the present work, Cu2ZnSnS4 (CZTS thin film was deposited onto the glass substrate by simple and economic SILAR method and its structural, morphological, optical and electrical properties were analyzed. X-ray diffraction (XRD analysis confirms the formation of CZTS with kesterite structure and the average crystallite size is found to be 142 nm. Scanning electron microscope (SEM image shows that the film has homogeneous, agglomerated surface without any cracks. The prepared CZTS film shows good optical absorption (104 cm−1 in the visible region and the optical band gap energy is found to be quite close to the optimum value of about 1.54 eV for solar cell application. The refractive index of the prepared film is found to be 2.85. The electrical resistivity of the film is found to be ∼10−2 Ω cm at room temperature.

  4. Linear and nonlinear optical discussions of nanostructured Zn-doped CdO thin films

    Science.gov (United States)

    Yahia, I. S.; Salem, G. F.; Iqbal, Javed; Yakuphanoglu, F.

    2017-04-01

    Here, we report the doping effect of zinc (Zn) on the physical properties of cadmium oxide (CdO) at various concentrations (1, 2, 3 and 4 wt% of Zn). The studied samples were prepared using sol-gel in addition with sol gel spin coating technique. The structural, optical and dispersive properties were compared with the already reported work in the literature. The structural properties were observed by using atomic force microscopy (AFM). The AFM images show that the grain size decreases with increasing the concentration of Zn. The highest value of average cluster size (78. 71 nm) was found at 1% and the lowest (60.23 nm) when the doping concentration of Zn was 4%. Similar trend was observed in the roughness of the doped thin film when the Zn concentration was increased. The optical properties were examined using Shimadzu UV-Vis-NIR spectrophotometer and we found that the optical band gap of the un-doped CdO and the Zn-doped CdO thin films increases from 2.54 to 2.62 eV as the Zn concentration is increased from 1% to 4%. Also, the optical dispersion parameters (Eo, Ed, n2∞, λ0 and So) were calculated and discussed. We observed that the refractive index dispersion of undoped CdO and the Zn-doped CdO thin films follow the single oscillator model. Finally, spectroscopic method has been exploited to analyze the 3rd order non-linear optical susceptibility χ (3) and nonlinear refractive index n (2).

  5. Morphological, structural and optical properties of ZnO thin films deposited by dip coating method

    Energy Technology Data Exchange (ETDEWEB)

    Marouf, Sara; Beniaiche, Abdelkrim; Guessas, Hocine, E-mail: aziziamor@yahoo.fr [Laboratoire des Systemes Photoniques et Optiques Non Lineaires, Institut d' Optique et Mecanique de Precision, Universite Ferhat Abbas-Setif 1, Setif (Algeria); Azizi, Amor [Laboratoire de Chimie, Ingenierie Moleculaire et Nanostructures, Universite Ferhat Abbas-Setif 1, Setif (Algeria)

    2017-01-15

    Zinc oxide (ZnO) thin films were deposited on glass substrate by dip coating technique. The effects of sol aging time on the deposition of ZnO films was studied by using the field emission scanning electron microscopy (FE-SEM), atomic force microscopy (AFM), X-ray diffraction (XRD), and optical transmission techniques. The morphology of the films strongly depends on preparation route and deposition technique. It is noteworthy that films deposited from the freshly prepared solution feature indistinct characteristics; had relatively poor crystalline quality and low optical transmittance in the visible region. The increase in sol aging time resulted in a gradual improvement in crystallinity (in terms of peak sharpness and peak intensity) of the hexagonal phase for all diffraction peaks. Effect of sol aging on optical transparency is quite obvious through increased transmission with prolonged sol aging time. Interestingly, 72-168 h sol aging time was found to be optimal to achieve smooth surface morphology, good crystallinity and high optical transmittance which were attributed to an ideal stability of solution. These findings present a better-defined and more versatile procedure for production of clean ZnO sols of readily adjustable nanocrystalline size. (author)

  6. Growth and optical characteristics of high-quality ZnO thin films on graphene layers

    Directory of Open Access Journals (Sweden)

    Suk In Park

    2015-01-01

    Full Text Available We report the growth of high-quality, smooth, and flat ZnO thin films on graphene layers and their photoluminescence (PL characteristics. For the growth of high-quality ZnO thin films on graphene layers, ZnO nanowalls were grown using metal-organic vapor-phase epitaxy on oxygen-plasma treated graphene layers as an intermediate layer. PL measurements were conducted at low temperatures to examine strong near-band-edge emission peaks. The full-width-at-half-maximum value of the dominant PL emission peak was as narrow as 4 meV at T = 11 K, comparable to that of the best-quality films reported previously. Furthermore, the stimulated emission of ZnO thin films on the graphene layers was observed at the low excitation energy of 180 kW/cm2 at room temperature. Their structural and optical characteristics were investigated using X-ray diffraction, transmission electron microscopy, and PL spectroscopy.

  7. Optical Characteristics of La-Doped ZnS Thin Films Prepared by Chemical Bath Deposition

    Institute of Scientific and Technical Information of China (English)

    XIE Hai-Qing; CHEN Yuan; HUANG Wei-Qing; HUANG Gui-Fang; PENG Ping; PENG Li; WANG Tai-Hang; ZENG Yun

    2011-01-01

    Undoped and La-doped ZnS thin films are prepared by chemical bath deposition (CBD) process through the co-precipitation reaction of inorganic precursors zinc sulfate, thiosulfate ammonia and La2O3. Composition of the films is analyzed using an energy-dispersive x-ray spectroscopy (EDS). Absorption spectra and spectral transmittances of the films are measured using a double beam UV-VIS spectrophotometer (TU-1901). It is found that significant red shifts in absorption spectra and decrease in absorptivity are obtained with increasing lanthanum. Moreover, optical transmittance is increased as La is doped, with a transmittance of more than 80% for wavelength above 360 nm in La-doped ZnS thin films. Compared to pure ZnS, the band gap decreases and flat-band potential positively shifts to quasi-metal for the La-doped ZnS. These results indicate that La-doped ZnS thin films could be valuably adopted as transparent electrodes.%@@ Undoped and La-doped ZnS thin films are prepared by chemical bath deposition (CBD) process through the co-precipitation reaction of inorganic precursors zinc sulfate, thiosulfate ammonia and La2O2.Composition of the 61ms is analyzed using an energy-dispersive x-ray spectroscopy (EDS).Absorption spectra and spectral tra.nsmitta.nces of the 61ms are measured using a double beam UV-VIS spectrophotometer (TU-1901).It is found that significant red shifts in absorption spectra and decrease in absorptivity are obtained with increasing lanthanum.Moreover, optical transmittance is increased as La is doped, with a transmittance of more than 80% for wavelength above 360 nm in La-doped ZnS thin 61ms.Compared to pure ZnS, the band gap decreases and flat-band potential positively shifts to quasi-metal for the La-doped ZnS.These results indicate that La-doped ZnS thin 6hns could be valuably adopted as transparent electrodes.

  8. Studies of thin films and surfaces with optical harmonic generation and electron spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Wilk, Dieter Emre [Univ. of California, Berkeley, CA (United States)

    1996-01-01

    Optical second harmonic generation (SHG) and sum frequency generation (SFG) were used to study C60 thin solid films (low energy ED forbidden electronic excitations), and electron spectroscopy was used to study organic overlayers (xylenes) on Pt(111). Theory of SHG from a thin film is described in terms of surface and bulk contributions as well as local and nonlocal contributions to the optical nonlinearities. (1)In situ SHG data on C60 films during UHV film growth can be described in terms of only nonlocal contributions to both surface and bulk nonlinear susceptibilities. Microscopic origin of SHG response is discussed in terms of electric quadrupole and ED transitions of C60. (2)Adsorption and thermal decomposition of ortho- and para-xylene on Pt(111) is studied using HREELS, LEED, AES, and thermal desorption spectroscopy. We have observed preferential decomposition of the methyl groups which leads to distinct decomposition pathways for ortho- and para-xylene on Pt(111).

  9. Optical Parameters of Spray-Deposited CdS1- y Te y Thin Films

    Science.gov (United States)

    Ikhmayies, Shadia J.

    2017-02-01

    CdS x Te1- x and CdS1- y Te y solid solutions are usually formed in the interfacial region in CdS/CdTe solar cells during the deposition of the CdTe layer and/or the processing steps of the device. In this work, indium-doped CdS1- y Te y thin films were prepared by first producing CdS:In thin films by the spray pyrolysis technique on glass substrates, then annealing the films in nitrogen atmosphere in the presence of elemental tellurium. The films were characterized by scanning electron microscopy, energy dispersive x-ray spectroscopy, and transmittance measurements. The transmittance was used to deduce the reflectance from which the optical parameters were computed. The extinction coefficient, refractive index, the real and imaginary parts of the dielectric constant, optical conductivity, and energy loss were computed, and their dependence on the composition was investigated. In addition, the dispersion of the refractive index was analyzed by the single oscillator model, and dispersion parameters were investigated.

  10. Structural, linear and nonlinear optical properties of co-doped ZnO thin films

    Science.gov (United States)

    Shaaban, E. R.; El-Hagary, M.; Moustafa, El Sayed; Hassan, H. Shokry; Ismail, Yasser A. M.; Emam-Ismail, M.; Ali, A. S.

    2016-01-01

    Different compositions of Co-doped zinc oxide [(Zn(1- x)Co x O) ( x = 0, 0.02, 0.04, 0.06, 0.08 and 0.10)] thin films were evaporated onto highly clean glass substrates by thermal evaporation technique using a modified source. The structural properties investigated by X-ray diffraction revealed hexagonal wurtzite ZnO-type structure. The crystallite size of the films was found to decrease with increasing Co content. The optical characterization of the films has been carried out using spectral transmittance and reflectance obtained in the wavelength range from 300 to 2500 nm. The refractive index has been found to increase with increasing Co content. It was further found that optical energy gap decreases from 3.28 to 3.03 eV with increasing Co content from x = 0 to x = 0.10, respectively. The dispersion of refractive index has been analyzed in terms of Wemple-DiDomenico (WDD) single-oscillator model. The oscillator parameters, the single-oscillator energy ( E o), the dispersion energy ( E d), and the static refractive index ( n 0), were determined. The nonlinear refractive index of the Zn(1- x)Co x O thin films was calculated and revealed well correlation with the linear refractive index and WDD parameters which in turn depend on the density and molar volume of the system.

  11. Preparation and optical properties of composite thin films with embedded InP nanoparticles

    Institute of Scientific and Technical Information of China (English)

    2001-01-01

    InP nanoparticles embedded in SiO2 thin films were prepared by radio-frequency magnetron co-sputtering. We analyzed the structure and growth behavior of the composite films under different preparation conditions. X-ray diffraction and Raman spectroscopy analyses indicate that InP nanoparticles have a polycrystalline structure. The aver-age size of InP nanoparticles is in the range of 3-10 nm. The broadening and red shift of the Raman peaks were observed,which can be interpreted by the phonon confinement model. Optical transmission spectra indicate that the optical absorp-tion edges of the films can be modulated in the visible light range. The marked blue shift of the absorption edge with respect to that of bulk InP is explained by the quantum con-finement effect. The theoretical values of the blue shift pre-dicted by the effective mass approximation model are differ-ent from the experimental results for the InP-SiO2 system. Analyses indicate that the exciton effective mass of the InP nanoparticles is not constant and is inverse relative to the particles radius,which may be the main reason that results in the discrepancy between the theoretical and the experi-mental result. We discussed the possible transition of the direct band gap to the indirect band gap for InP nanoparti-cles embedded in SiO2 thin films.

  12. Optical Parameters of Spray-Deposited CdS1-y Te y Thin Films

    Science.gov (United States)

    Ikhmayies, Shadia J.

    2016-11-01

    CdS x Te1-x and CdS1-y Te y solid solutions are usually formed in the interfacial region in CdS/CdTe solar cells during the deposition of the CdTe layer and/or the processing steps of the device. In this work, indium-doped CdS1-y Te y thin films were prepared by first producing CdS:In thin films by the spray pyrolysis technique on glass substrates, then annealing the films in nitrogen atmosphere in the presence of elemental tellurium. The films were characterized by scanning electron microscopy, energy dispersive x-ray spectroscopy, and transmittance measurements. The transmittance was used to deduce the reflectance from which the optical parameters were computed. The extinction coefficient, refractive index, the real and imaginary parts of the dielectric constant, optical conductivity, and energy loss were computed, and their dependence on the composition was investigated. In addition, the dispersion of the refractive index was analyzed by the single oscillator model, and dispersion parameters were investigated.

  13. Optical properties and structure of Sb-rich AgInSbTe phase change thin films

    Institute of Scientific and Technical Information of China (English)

    张广军; 顾冬红; 干福熹

    2005-01-01

    A new composition content quaternary-alloy-based phase change thin film, Sb-rich AgInSbTe, has been prepared by DC-magnetron sputtering on a K9 glass substrate. After the film has been subsequently annealed at 200 ℃ for 30min,it becomes a crystalline thin film. The diffraction peak of antimony (Sb) are observed by shallow (0.5 degree) x-ray diffraction in the quaternary alloy thin film. The analyses of the measurement from differential scanning calorimetry (DSC) show that the crystallization temperature of the phase change thin film is about 190C and increases with the heating rate. By Kissinger plot, the activation energy for crystallization is determined to be 3.05eV. The refiectivity,refractive index and extinction coefficient of the crystalline and amorphous phase change thin films are presented.The optical absorption coefficient of the phase change thin films as a function of photon energy is obtained from the extinction coefficient. The optical band gaps of the amorphous and crystallization phase change thin films are 0.265eV and 1.127eV, respectively.

  14. High-energy ion treatments of amorphous As40Se60 thin films for optical applications

    Directory of Open Access Journals (Sweden)

    Rashmi Chauhan

    2014-06-01

    Full Text Available The treatment of 100 MeV Ag swift-heavy ion (SHI irradiation with five different fluences (3×1010, 1×1011, 3×1011, 1×1012, and 3×1012 ions/cm2 was used to design optical and structural properties of amorphous (a- As40Se60 chalcogenide thin films. Swanepoel method was applied on transmission measurements to determine the changes in optical bandgap, Tauc parameter and linear optical parameters, i.e., linear optical absorption, extinction coefficient and linear refractive index. Dispersion of the material was determined by Wemple–DiDomenico relation. Changes in nonlinear optical parameters of third-order optical susceptibility and nonlinear refractive index were determined using semi-empirical relations. Changes in surface morphology of the films were investigated using SEM observation, which indicated that fluence 3×1012 ions/cm2 was upper threshold limit for these films for ion treatment. It is observed that optical bandgap reduces from 1.76 eV to 1.64 eV, and nonlinear refractive index increases from 1.31×10−10 [esu] to 1.74×10−10 [esu]. Linear refractive index initially increases from 2.80 to 3.52 (for fluence 3×1010 ions/cm2 and then keeps decreasing. The observed changes in optical properties upon irradiation were explained in terms of structural rearrangements by Raman measurement. The study was compiled with the previous literature to propose SHI as an effective optical engineering technique to achieve desired changes according to the need of optical/photonic applications.

  15. High-energy ion treatments of amorphous As40Se60 thin films for optical applications

    Institute of Scientific and Technical Information of China (English)

    Rashmi Chauhan; Arvind Tripathi; Krishna Kant Srivastava

    2014-01-01

    The treatment of 100 MeV Ag swift-heavy ion (SHI) irradiation with five different fluences (3 ? 1010, 1 ? 1011, 3 ? 1011, 1 ? 1012, and 3 ? 1012 ions/cm2) was used to design optical and structural properties of amorphous (a-) As40Se60 chalcogenide thin films. Swanepoel method was applied on transmission measurements to determine the changes in optical bandgap, Tauc parameter and linear optical parameters, i.e., linear optical absorption, extinction coefficient and linear refractive index. Dispersion of the material was determined by Wemple-DiDomenico relation. Changes in nonlinear optical parameters of third-order optical susceptibility and nonlinear refractive index were determined using semi-empirical relations. Changes in surface morphology of the films were investigated using SEM observation, which indicated that fluence 3 ? 1012 ions/cm2 was upper threshold limit for these films for ion treatment. It is observed that optical bandgap reduces from 1.76 eV to 1.64 eV, and nonlinear refractive index increases from 1.31 ? 10 ? 10 [esu] to 1.74 ? 10 ? 10 [esu]. Linear refractive index initially increases from 2.80 to 3.52 (for fluence 3 ? 1010 ions/cm2) and then keeps decreasing. The observed changes in optical properties upon irradiation were explained in terms of structural rearrangements by Raman measurement. The study was compiled with the previous literature to propose SHI as an effective optical engineering technique to achieve desired changes according to the need of optical/photonic applications.

  16. Influence of thermal annealing on microstructural, morphological, optical properties and surface electronic structure of copper oxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Akgul, Funda Aksoy, E-mail: fundaaksoy01@gmail.com [Department of Physics, Nigde University, 51240 Nigde (Turkey); Center for Solar Energy Research and Applications, Middle East Technical University, 06800 Ankara (Turkey); Akgul, Guvenc, E-mail: guvencakgul@gmail.com [Bor Vocational School, Nigde University, 51700 Nigde (Turkey); Center for Solar Energy Research and Applications, Middle East Technical University, 06800 Ankara (Turkey); Yildirim, Nurcan [Department of Physics Engineering, Ankara University, 06100 Ankara (Turkey); Department of Metallurgical and Materials Engineering, Middle East Technical University, 06800 Ankara (Turkey); Unalan, Husnu Emrah [Department of Metallurgical and Materials Engineering, Middle East Technical University, 06800 Ankara (Turkey); Center for Solar Energy Research and Applications, Middle East Technical University, 06800 Ankara (Turkey); Turan, Rasit [Department of Physics, Middle East Technical University, 06800 Ankara (Turkey); Center for Solar Energy Research and Applications, Middle East Technical University, 06800 Ankara (Turkey)

    2014-10-15

    In this study, effect of the post-deposition thermal annealing on copper oxide thin films has been systemically investigated. The copper oxide thin films were chemically deposited on glass substrates by spin-coating. Samples were annealed in air at atmospheric pressure and at different temperatures ranging from 200 to 600°C. The microstructural, morphological, optical properties and surface electronic structure of the thin films have been studied by diagnostic techniques such as X-ray diffraction (XRD), Raman spectroscopy, ultraviolet–visible (UV–VIS) absorption spectroscopy, field emission scanning electron microscopy (FESEM), atomic force microscopy (AFM), and X-ray photoelectron spectroscopy (XPS). The thickness of the films was about 520 nm. Crystallinity and grain size was found to improve with annealing temperature. The optical bandgap of the samples was found to be in between 1.93 and 2.08 eV. Cupric oxide (CuO), cuprous oxide (Cu{sub 2}O) and copper hydroxide (Cu(OH){sub 2}) phases were observed on the surface of as-deposited and 600 °C annealed thin films and relative concentrations of these three phases were found to depend on annealing temperature. A complete characterization reported herein allowed us to better understand the surface properties of copper oxide thin films which could then be used as active layers in optoelectronic devices such as solar cells and photodetectors. - Highlights: • Effect of post-deposition annealing on copper oxide thin films was investigated. • Structural, optical, and electronic properties of the thin films were determined. • Oxidation states of copper oxide thin films were confirmed by XPS analysis. • Mixed phases of CuO and Cu{sub 2}O were found to coexist in copper oxide thin films.

  17. Linear and nonlinear optical investigations of nano-scale Si-doped ZnO thin films: spectroscopic approach

    Science.gov (United States)

    Jilani, Asim; Abdel-wahab, M. Sh.; Zahran, H. Y.; Yahia, I. S.; Al-Ghamdi, Attieh A.

    2016-09-01

    Pure and Si-doped ZnO (SZO) thin films at different concentration of Si (1.9 and 2.4 wt%) were deposited on highly cleaned glass substrate by radio frequency (DC/RF) magnetron sputtering. The morphological and structural investigations have been performed by atomic force electron microscope (AFM) and X-ray diffraction (XRD). The X-ray photoelectron spectroscopy was employed to study the composition and the change in the chemical state of Si-doped ZnO thin films. The optical observations like transmittance, energy band gap, extinction coefficient, refractive index, dielectric loss of pure and Si-doped ZnO thin films have been calculated. The linear optical susceptibility, nonlinear refractive index, and nonlinear optical susceptibility were also studied by the spectroscopic approach rather than conventional Z-scan method. The energy gap of Si-doped ZnO thin films was found to increase as compared to pure ZnO thin films. The crystallinity of the ZnO thin films was effected by the Si doping. The O1s spectra in pure and Si-doped ZnO revealed the bound between O-2 and Zn+2 ions and reduction in the surface oxygen with the Si doping. The chemical state analysis of Si 2p showed the conversation of Si to SiOx and SiO2. The increase in the first-order linear optical susceptibility χ (1) and third-order nonlinear optical susceptibility χ (3) was observed with the Si doping. The nonlinear studies gave some details about the applications of metal oxides in nonlinear optical devices. In short, this study showed that Si doping through sputtering has effected on the structural, surface and optical properties of ZnO thin films which could be quite useful for advanced applications such as metal-oxide-based optical devices.

  18. Programmable Bidirectional Folding of Metallic Thin Films for 3D Chiral Optical Antennas.

    Science.gov (United States)

    Mao, Yifei; Zheng, Yun; Li, Can; Guo, Lin; Pan, Yini; Zhu, Rui; Xu, Jun; Zhang, Weihua; Wu, Wengang

    2017-03-10

    3D structures with characteristic lengths ranging from nanometer to micrometer scale often exhibit extraordinary optical properties, and have been becoming an extensively explored field for building new generation nanophotonic devices. Albeit a few methods have been developed for fabricating 3D optical structures, constructing 3D structures with nanometer accuracy, diversified materials, and perfect morphology is an extremely challenging task. This study presents a general 3D nanofabrication technique, the focused ion beam stress induced deformation process, which allows a programmable and accurate bidirectional folding (-70°-+90°) of various metal and dielectric thin films. Using this method, 3D helical optical antennas with different handedness, improved surface smoothness, and tunable geometries are fabricated, and the strong optical rotation effects of single helical antennas are demonstrated.

  19. Correlations of electro-optical and nanostructural properties of CdTe thin films

    Science.gov (United States)

    Levi, D. H.; Moutinho, H. R.; Hasoon, F. S.; Ahrenkiel, R. K.; Kazmerski, L. L.; Al-Jassim, M. M.

    1996-01-01

    This paper presents correlations of macroscopic optical properties with the nanoscale physical and electronic structure of CdTe/CdS thin films used for photovoltaic cell fabrication. We have studied the evolution of these properties under systematic variation of post-growth treatment conditions for several standard deposition techniques. The electro-optical properties and nanostructure depend strongly on deposition conditions and post-growth treatments. Our results indicate that the standard CdCl2—heat treatment enhances grain size and passivates defects. We have also found strong evidence for sulfur diffusion across the CdTe—CdS interface. This interdiffusion produces a thin layer at the junction with a bandgap lower than the rest of the absorber layer. This effect could have important implications for photoexcited carrier collection in photovoltaic applications.

  20. Correlations of electro-optical and nanostructural properties of CdTe thin films

    Energy Technology Data Exchange (ETDEWEB)

    Levi, D.H.; Moutinho, H.R.; Hasoon, F.S.; Ahrenkiel, R.K.; Kazmerski, L.L.; Al-Jassim, M.M. [National Renewable Energy Laboratory, 1617 Cole Blvd., Golden, Colorado 80401 (United States)

    1996-01-01

    This paper presents correlations of macroscopic optical properties with the nanoscale physical and electronic structure of CdTe/CdS thin films used for photovoltaic cell fabrication. We have studied the evolution of these properties under systematic variation of post-growth treatment conditions for several standard deposition techniques. The electro-optical properties and nanostructure depend strongly on deposition conditions and post-growth treatments. Our results indicate that the standard CdCl{sub 2}{emdash}heat treatment enhances grain size and passivates defects. We have also found strong evidence for sulfur diffusion across the CdTe{emdash}CdS interface. This interdiffusion produces a thin layer at the junction with a bandgap lower than the rest of the absorber layer. This effect could have important implications for photoexcited carrier collection in photovoltaic applications. {copyright} {ital 1996 American Institute of Physics.}

  1. Effect of the thin-film limit on the measurable optical properties of graphene.

    Science.gov (United States)

    Holovský, Jakub; Nicolay, Sylvain; De Wolf, Stefaan; Ballif, Christophe

    2015-10-28

    The fundamental sheet conductance of graphene can be directly related to the product of its absorption coefficient, thickness and refractive index. The same can be done for graphene's fundamental opacity if the so-called thin-film limit is considered. Here, we test mathematically and experimentally the validity of this limit on graphene, as well as on thin metal and semiconductor layers. Notably, within this limit, all measurable properties depend only on the product of the absorption coefficient, thickness, and refractive index. As a direct consequence, the absorptance of graphene depends on the refractive indices of the surrounding media. This explains the difficulty in determining separately the optical constants of graphene and their widely varying values found in literature so far. Finally, our results allow an accurate estimation of the potential optical losses or gains when graphene is used for various optoelectronic applications.

  2. Thin film superfluid optomechanics

    CERN Document Server

    Baker, Christopher G; McAuslan, David L; Sachkou, Yauhen; He, Xin; Bowen, Warwick P

    2016-01-01

    Excitations in superfluid helium represent attractive mechanical degrees of freedom for cavity optomechanics schemes. Here we numerically and analytically investigate the properties of optomechanical resonators formed by thin films of superfluid $^4$He covering micrometer-scale whispering gallery mode cavities. We predict that through proper optimization of the interaction between film and optical field, large optomechanical coupling rates $g_0>2\\pi \\times 100$ kHz and single photon cooperativities $C_0>10$ are achievable. Our analytical model reveals the unconventional behaviour of these thin films, such as thicker and heavier films exhibiting smaller effective mass and larger zero point motion. The optomechanical system outlined here provides access to unusual regimes such as $g_0>\\Omega_M$ and opens the prospect of laser cooling a liquid into its quantum ground state.

  3. Low power optical limiting studies on nanocrystalline benzimidazole thin films prepared by modified liquid phase growth technique

    Indian Academy of Sciences (India)

    P A Praveen; S P Prabhakaran; R Ramesh Babu; K Sethuraman; K Ramamurthi

    2015-06-01

    In the present work, benzimidazole (BMZ), a well known nonlinear optical material, thin films were deposited using the modified liquid phase growth technique at different solution temperatures. The prepared samples were subjected to spectral, structural and surface analyses. Linear optical properties and third-order optical nonlinearity of the deposited BMZ thin films were analysed using UV–visible–NIR spectrum and -scan technique, respectively. The experimental results show that the BMZ films exhibit reverse saturable absorption and positive nonlinearity at 650 nm CW laser of power 5 mW. The measured third-order nonlinear susceptibility of the films is about 10−10 esu. Optical limiting studies were performed using the same laser source and the potentiality of the BMZ films is reported.

  4. Characteristics of the Sculptured Cu Thin Films and Their Optical Properties as a function of deposition rate

    CERN Document Server

    Savaloni, H; Song, S; Placido, F; 10.1016/j.apsusc.2009.05.011

    2010-01-01

    Sculptured copper thin films were deposited on glass substrates, using different deposition rates. The nano-structure and morphology of the films were obtained, using X-ray diffraction (XRD), atomic force microscopy (AFM) and scanning electron microscopy (SEM). Their optical properties were measured by spectrophotometry in the spectral range of 340-850 nm. The Scot package was used for modeling the film structure and fitting the calculated optical transmittance results to the experimental data and obtaining, both real and imaginary refractive indices, film thickness and fraction of metal inclusion in the film structure.

  5. Studies on the Electrical and Optical Properties of Magnesium Phthalocyanine Thin Films

    Directory of Open Access Journals (Sweden)

    T. G. Gopinathan

    2004-01-01

    Full Text Available Thin films of Magnesium Phthalocyanine (MgPc are prepared by thermal evaporation technique at a base pressure of 10-5 m.bar on thoroughly cleaned glass substrates kept at different constant temperatures. Films of thickness 2400 A.U. coated at room temperature are subjected to post deposition annealing in air by keeping them in a furnace at different constant temperatures, for one hour. The electrical conductivity studies are conducted in the temperature range 300 K to 525 K. The electrical conductivity is plotted as a function of absolute temperature. The conduction mechanism is observed to be hopping. The thermal activation energy is calculated in different cases and is observed to vary with substrate temperature and annealing temperature. A phase change is observed due to post-deposition annealing at around 523 K. The optical absorption studies are done in the UV-Visible region. The optical band gap energies of the samples are calculated.

  6. Optical Properties of Nitrogen-Substituted Strontium Titanate Thin Films Prepared by Pulsed Laser Deposition

    Directory of Open Access Journals (Sweden)

    Alexander Wokaun

    2009-09-01

    Full Text Available Perovskite-type N-substituted SrTiO3 thin films with a preferential (001 orientation were grown by pulsed laser deposition on (001-oriented MgO and LaAlO3 substrates. Application of N2 or ammonia using a synchronized reactive gas pulse produces SrTiO3-x:Nx films with a nitrogen content of up to 4.1 at.% if prepared with the NH3 gas pulse at a substrate temperature of 720 °C. Incorporating nitrogen in SrTiO3 results in an optical absorption at 370-460 nm associated with localized N(2p orbitals. The estimated energy of these levels is ≈2.7 eV below the conduction band. In addition, the optical absorption increases gradually with increasing nitrogen content.

  7. Pulsed Laser Deposited Nickel Doped Zinc Oxide Thin Films: Structural and Optical Investigations

    Directory of Open Access Journals (Sweden)

    Tanveer A. Dar

    2013-05-01

    Full Text Available Structural and optical studies has been done on Nickel doped Zinc Oxide (NixZn1 – xO, x  0.03, 0.05 and 0.07 by weight thin films prepared by pulsed laser deposition technique. The films are characterized by X-ray diffraction, Uv-vis spectroscopy, X-ray photoelectron spectroscopy. We observed a slight red shift in the optical band gap in the NiZnO subsequent to Ni doping. This shift can be assigned due to the sp-d exchange interaction of Ni- d states with s and p-states of ZnO. Also X-ray photoelectron spectroscopy studies show that Ni has well substituted in + 2 oxidation state by replacing Zn2+.

  8. Relationship between tribology and optics in thin films of mechanically oriented nanocrystals.

    Science.gov (United States)

    Wong, Liana; Hu, Chunhua; Paradise, Ruthanne; Zhu, Zina; Shtukenberg, Alexander; Kahr, Bart

    2012-07-25

    Many crystalline dyes, when rubbed unidirectionally with cotton on glass slides, can be organized as thin films of highly aligned nanocrystals. Commonly, the linear birefringence and linear dichroism of these films resemble the optical properties of single crystals, indicating precisely oriented particles. Of 186 colored compounds, 122 showed sharp extinction and 50 were distinctly linearly dichroic. Of the latter 50 compounds, 88% were more optically dense when linearly polarized light was aligned with the rubbing axis. The mechanical properties of crystals that underlie the nonstatistical correlation between tribological processes and the direction of electron oscillations in absorption bands are discussed. The features that give rise to the orientation of dye crystallites naturally extend to colorless molecular crystals.

  9. Influence of bias voltage on structural and optical properties of TiNx thin films

    Science.gov (United States)

    Singh, Omveer; Dahiya, Raj P.; Malik, Hitendra K.; Kumar, Parmod

    2015-08-01

    In the present work, Ti thin films were deposited on Si substrate using DC sputtering technique. Indigenous hot cathode arc discharge plasma system was used for nitriding over these samples, where the plasma parameters and work piece can be controlled independently. A mixture of H2 and N2 gases (in the ratio of 80:20) was supplied into the plasma chamber. The effect of bias voltage on the crystal structure, morphology and optical properties was investigated by employing various physical techniques such as X-ray Diffraction, Atomic Force Microscopy and UV-Vis spectrometry. It was found that bias voltage affects largely the crystal structure and band gap which in turn is responsible for the modifications in optical properties of the deposited films.

  10. Magneto-Optical Detection of the Spin Hall Effect in Pt and W Thin Films

    Science.gov (United States)

    Stamm, C.; Murer, C.; Berritta, M.; Feng, J.; Gabureac, M.; Oppeneer, P. M.; Gambardella, P.

    2017-08-01

    The conversion of charge currents into spin currents in nonmagnetic conductors is a hallmark manifestation of spin-orbit coupling that has important implications for spintronic devices. Here we report the measurement of the interfacial spin accumulation induced by the spin Hall effect in Pt and W thin films using magneto-optical Kerr microscopy. We show that the Kerr rotation has opposite sign in Pt and W and scales linearly with current density. By comparing the experimental results with ab initio calculations of the spin Hall and magneto-optical Kerr effects, we quantitatively determine the current-induced spin accumulation at the Pt interface as 5 ×10-12 μB A-1 cm2 per atom. From thickness-dependent measurements, we determine the spin diffusion length in a single Pt film to be 11 ±3 nm , which is significantly larger compared to that of Pt adjacent to a magnetic layer.

  11. Near infrared to ultraviolet optical properties of bulk single crystal and nanocrystal thin film iron pyrite

    Science.gov (United States)

    Subedi, Indra; Bhandari, Khagendra P.; Ellingson, Randall J.; Podraza, Nikolas J.

    2016-07-01

    We report optical properties of iron pyrite (FeS2) determined from ex situ spectroscopic ellipsometry measurements made on both a commercially available bulk single crystal and nanocrystalline thin film over a spectral range of 0.735-5.887 eV. The complex dielectric function, ɛ (E) = ɛ 1 (E) + iɛ 2 (E), spectra have been determined by fitting a layered parametric model to the ellipsometric measurements. Spectra in ɛ are modeled using a Kramers-Kronig consistent critical point parabolic band model involving seven critical points for the bulk single crystal and four critical points for the nanocrystalline film. Absorption coefficient spectra for both types of samples are also determined from ɛ. Critical point features in the nanocrystalline films are broader, have lower amplitude and lower energy critical points detected having a small blue shift when compared to the single crystal sample.

  12. Nonlinear optical properties of poly(methyl methacrylate) thin films doped with Bixa Orellana dye

    Science.gov (United States)

    Zongo, S.; Kerasidou, A. P.; Sone, B. T.; Diallo, A.; Mthunzi, P.; Iliopoulos, K.; Nkosi, M.; Maaza, M.; Sahraoui, B.

    2015-06-01

    Natural dyes with highly delocalized π-electron systems are considered as promising organic materials for nonlinear optical applications. Among these dyes, Bixa Orellana dye with extended π-electron delocalization is one of the most attractive dyes. Bixa Orellana dye-doped Poly(methyl methacrylate) (PMMA) thin films were prepared through spin coating process for linear and nonlinear optical properties investigation. Atomic force microscopy (AFM) was used to evaluate the roughness of the thin films. The optical constants n and k were evaluated by ellipsometric spectroscopy. The refractive index had a maximum of about 1.456 at 508.5, 523.79 and 511.9 nm, while the maximum of k varies from 0.070 to 0.080 with the thickness. The third order nonlinear optical properties of the hybrid Bixa Orellana dye-PMMA polymer were investigated under 30 ps laser irradiation at 1064 nm with a repetition rate of 10 Hz. In particular the third-order nonlinear susceptibility has been determined by means of the Maker Fringes technique. The nonlinear third order susceptibility was found to be 1.00 × 10-21 m2 V-2 or 0.72 × 10-13 esu. Our studies provide concrete evidence that the hybrid-PMMA composites of Bixa dye are prospective candidates for nonlinear material applications.

  13. Structural and optical characterization of ZrO2 thin films grown on silicon and quartz substrates

    Science.gov (United States)

    Hojabri, Alireza

    2016-09-01

    Zirconium oxide thin films were grown successfully by thermal annealing of zirconium thin films deposited on quartz and silicon substrates by direct current magnetron sputtering technique. The structural and optical properties in relation to thermal annealing times were investigated. The X-ray diffraction patterns revealed that structure of films changes from amorphous to crystalline by increase of annealing times in range 60-240 min. The composition of films was determined by Rutherford back scattering spectroscopy. Atomic force microscopy results exhibited that surface morphology and roughness of films depend on the annealing time. The refractive index of the films was calculated using Swanepoel's method. The optical band gap energy of annealed films decreased from 5.50 to 5.34 eV with increasing thermal annealing time.

  14. Structural and optical properties of Zn doped CuInS2 thin films

    Indian Academy of Sciences (India)

    Mahdi H Suhail

    2012-11-01

    Copper indium sulphide (CIS) films were deposited by spray pyrolysis onto glass substrates from aqueous solutions of copper (II) sulphate, indium chloride and thiourea using compressed air as the carrier gas. The copper/indium molar ratio (Cu/In) in the solution 1(1:1) and the sulphur/copper ratio (S/Cu) was fixed at 4. Structural properties of these films were characterized. The effects of Zn (0–5%)molecular weight compared with CuInS2 Source and different substrate temperatures on films properties were investigated using X-ray diffraction (XRD) and optical transmission spectra. Optical characteristics of the CuInS2 films have been analysed using spectrophotometer in the wavelength range 300–1100 nm. The absorption spectra of the films showed that this compound is a direct bandgap material and gap values varied between 1.55 and 1.57 eV, depending on the substrate temperatures. Zn-doped samples have a bandgap energy of 1.55–1.95 eV. It was observed that there is an increase in optical bandgap with increasing Zn % molecular weight. The optical constants of the deposited films were obtained from the analysis of the experimentally recorded transmission and absorption spectral data. The refractive index, n and dielectric constants, 1 and 2, were also discussed and calculated as a function of investigated wavelength range and found it dependent on Zn incorporation. We found that the Zn-doped CuInS2 thin films exhibit P-type conductivity and we predict that Zn species can be considered as suitable candidates for use as doped acceptors to fabricate CuInS2-based solar cells. The paper presents a study concerning the influence of deposition parameters (temperature of the substrate and concentration of Zn (1–5)% from 0.16 M ZnCl2) on the quality of CuInS2 thin films achieved by spray pyrolysis on glass substrate from solutions containing 0.02 M CuCl2.2H2O, 0.16 M thiourea and 0.08 M In2Cl3.5H2O.

  15. Structural and optical properties of gold-incorporated diamond-like carbon thin films deposited by RF magnetron sputtering

    Science.gov (United States)

    Majeed, Shahbaz; Siraj, K.; Naseem, S.; Khan, Muhammad F.; Irshad, M.; Faiz, H.; Mahmood, A.

    2017-07-01

    Pure and gold-doped diamond-like carbon (Au-DLC) thin films are deposited at room temperature by using RF magnetron sputtering in an argon gas-filled chamber with a constant flow rate of 100 sccm and sputtering time of 30 min for all DLC thin films. Single-crystal silicon (1 0 0) substrates are used for the deposition of pristine and Au-DLC thin films. Graphite (99.99%) and gold (99.99%) are used as co-sputtering targets in the sputtering chamber. The optical properties and structure of Au-DLC thin films are studied with the variation of gold concentration from 1%-5%. Raman spectroscopy, atomic force microscopy (AFM), Vickers hardness measurement (VHM), and spectroscopic ellipsometry are used to analyze these thin films. Raman spectroscopy indicates increased graphitic behavior and reduction in the internal stresses of Au-DLC thin films as the function of increasing gold doping. AFM is used for surface topography, which shows that spherical-like particles are formed on the surface, which agglomerate and form larger clusters on the surface by increasing the gold content. Spectroscopy ellipsometry analysis elucidates that the refractive index and extinction coefficient are inversely related and the optical bandgap energy is decreased with increasing gold content. VHM shows that gold doping reduces the hardness of thin films, which is attributed to the increase in sp2-hybridization.

  16. Physical and optical properties of amorphous Ge x As20S80- x thin films

    Science.gov (United States)

    Dahshan, A.; Amer, H. H.

    2011-02-01

    We report the effect of replacement of sulfur by germanium on the optical constants and some other physical parameters of chalcogenide Ge x As20S80- x (where x = 0, 5, 10, 15 and 20 at%) thin films. Increasing germanium content affected the average heat of atomization, average coordination number, number of constraints and the cohesive energy. Films with thicknesses 800-820 nm of Ge x As20S80- x were prepared by thermal evaporation of bulk samples. Transmission spectra, T(λ), of the films at normal incidence were obtained in the region from 400 to 2500 nm. A straightforward analysis proposed by Swanepoel [J. Phys. E Sci. Instrum. 16 (1983) p 1214], based on the use of maxima and minima of the interference fringes, has been applied to derive the real and imaginary parts of the complex index of refraction and also the film thickness. Optical absorption measurements showed that the fundamental absorption edge is a function of composition. Optical absorption is due to allowed non-direct transition and the energy gap decreases while the refractive index increases with increasing germanium content. The chemical-bond approach has been applied to obtain the excess of S-S homopolar bonds and the cohesive energy of the Ge x As20S80- x system.

  17. Optical Properties of Ar Ions Irradiated Nanocrystalline ZrC and ZrN Thin Films

    Science.gov (United States)

    Martin, C.; Miller, K. H.; Makino, H.; Craciun, D.; Simeone, D.; Craciun, V.

    2016-01-01

    Thin nanocrystalline ZrC and ZrN films (less than 400 nanometers), grown on (100) Si substrates at a substrate temperature of 500 degrees Centigrade by the pulsed laser deposition (PLD) technique, were irradiated by 800 kiloelectronvolts Ar ion irradiation with fluences from 1 times 10(sup 14) atoms per square centimeter up to 2 times 10(sup 15) atoms per square centimeter. Optical reflectance data, acquired from as-deposited and irradiated films, in the range of 500-50000 per centimeter (0.06–6 electronvolts), was used to assess the effect of irradiation on the optical and electronic properties. Both in ZrC and ZrN films we observed that irradiation affects the optical properties of the films mostly at low frequencies, which is dominated by the free carriers response. In both materials, we found a significant reduction in the free carriers scattering rate, i.e. possible increase in mobility, at higher irradiation flux. This is consistent with our previous findings that irradiation affects the crystallite size and the micro-strain, but it does not induce major structural changes.

  18. Ultraviolet optical properties of aluminum fluoride thin films deposited by atomic layer deposition

    Energy Technology Data Exchange (ETDEWEB)

    Hennessy, John, E-mail: john.j.hennessy@jpl.nasa.gov; Jewell, April D.; Balasubramanian, Kunjithapatham; Nikzad, Shouleh [Jet Propulsion Laboratory, California Institute of Technology, 4800 Oak Grove Drive, Pasadena, California 91109 (United States)

    2016-01-15

    Aluminum fluoride (AlF{sub 3}) is a low refractive index material with promising optical applications for ultraviolet (UV) wavelengths. An atomic layer deposition process using trimethylaluminum and anhydrous hydrogen fluoride has been developed for the deposition of AlF{sub 3} at substrate temperatures between 100 and 200 °C. This low temperature process has resulted in thin films with UV-optical properties that have been characterized by ellipsometric and reflection/transmission measurements at wavelengths down to 200 nm. The optical loss for 93 nm thick films deposited at 100 °C was measured to be less than 0.2% from visible wavelengths down to 200 nm, and additional microstructural characterization demonstrates that the films are amorphous with moderate tensile stress of 42–105 MPa as deposited on silicon substrates. X-ray photoelectron spectroscopy analysis shows no signature of residual aluminum oxide components making these films good candidates for a variety of applications at even shorter UV wavelengths.

  19. Growth technology, X-ray and optical properties of CdSe thin films

    Energy Technology Data Exchange (ETDEWEB)

    Esparza-Ponce, H.E. [CINVESTAV-IPN Unidad Queretaro, Queretaro 76230, Qro (Mexico); CIMAV, Miguel de Cervantes 120, Chihuahua 31109, Chih. (Mexico)], E-mail: hilda.esparza@cimav.edu.mx; Hernandez-Borja, J. [CINVESTAV-IPN Unidad Queretaro, Queretaro 76230, Qro (Mexico); Reyes-Rojas, A. [CIMAV, Miguel de Cervantes 120, Chihuahua 31109, Chih. (Mexico); Cervantes-Sanchez, M. [CINVESTAV-IPN Unidad Queretaro, Queretaro 76230, Qro (Mexico); Instituto Tecnologico de Morelia, Morelia 58120, Michoacan (Mexico); Vorobiev, Y.V.; Ramirez-Bon, R.; Perez-Robles, J.F. [CINVESTAV-IPN Unidad Queretaro, Queretaro 76230, Qro (Mexico); Gonzalez-Hernandez, J. [CIMAV, Miguel de Cervantes 120, Chihuahua 31109, Chih. (Mexico)

    2009-02-15

    An ammonia-free chemical-bath deposition was used to obtain CdSe thin films on glass substrate. The materials used in the chemical bath were cadmium chloride complexed with sodium citrate and sodium selenosulphate. The preparation conditions, especially the starting solution characteristics, such as concentration of dissolved materials, temperature, pH value as well as deposition time and immersion cycles were optimized to obtain homogeneous stoichiometric films with good adherence to the glass substrate. The films thickness was in the range of 400-500 nm with a growing time of 4 h. The material obtained was characterized by optical absorption, SEM with the energy dispersive X-ray analysis (EDS) and X-ray diffraction. The films obtained at bath temperatures of 70 and 80 deg. C had the hexagonal structure (of wurtzite type), with crystallite size of about 20 nm. Room temperature deposition results in films with the cubic structure and crystallite size of about 4 nm. From optical transmission data, an energy gap equal to 1.88 eV was found. The material is interesting for applications in hybrid systems for solar energy conversion.

  20. Structural characterization and optical properties of ZnSe thin films

    Science.gov (United States)

    Rusu, G. I.; Diciu, M.; Pîrghie, C.; Popa, E. M.

    2007-10-01

    Zinc selenide (ZnSe) thin films ( d = 0.11-0.93 μm) were deposited onto glass substrates by the quasi-closed volume technique under vacuum. Their structural characteristics were studied by X-ray diffraction (XRD) and atomic force microscopy (AFM). The experiments showed that the films are polycrystalline and have a zinc blende (cubic) structure. The film crystallites are preferentially oriented with the (1 1 1) planes parallel to the substrate surface. AFM images showed that the films have a grain like surface morphology. The average roughness, Ra = 3.3-6.4 nm, and the root mean square roughness, Rrms = 5.4-11.9 nm, were calculated and found to depend on the film thickness and post-deposition heat treatment. The spectral dependence of the absorption coefficient was determined from transmission spectra, in the range 300-1400 nm. The values of optical bandgap were calculated from the absorption spectra, Eg = 2.6-2.7 eV. The effect of the deposition conditions and post-deposition heat treatment on the structural and optical characteristics was investigated.

  1. Dependence of electro-optical properties on the deposition conditions of chemical bath deposited CdS thin films

    Energy Technology Data Exchange (ETDEWEB)

    Dona, J.M.; Herrero, J. [CIEMAT, Madrid (Spain). Inst. de Energias Renovables

    1997-11-01

    Lately, there has been a sharp increase in the publication of papers on chemical bath deposition of CdS thin films and related materials due to successful results obtained using this method to fabricate CdS thin-film buffer layers for CuInSe{sub 2}- and CdTe-based polycrystalline thin-film solar cells. Generally, these papers focus on previously proposed methods of studying film characteristics without a systematic study of the influence of deposition conditions on film characteristics. In this paper the authors present an exhaustive study of the chemical bath-deposited CdS thin films electro-optical properties dependence on deposition variables. The authors propose not only a set of conditions for obtaining CdS thin films by this method but additionally, suitable deposition process conditions for certain application requirements, such as buffer layers for thin-film solar cells. The observed electro-optical characteristics dependence on the deposition variables corroborates the chemical mechanism that they proposed previously for this process.

  2. Effect of He{sup +} irradiation on the optical properties of vacuum evaporated silver indium selenide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Santhosh Kumar, M.C., E-mail: santhoshmc@yahoo.co [Advanced Materials Laboratory, Department of Physics, National Institute of Technology, Tiruchirappalli, Tamil Nadu 620 015 (India); Pradeep, B. [Solid State Physics Laboratory, Department of Physics, Cochin University of Science and Technology, Cochin, Kerala 682 022 (India)

    2010-04-09

    We prepared polycrystalline silver indium selenide thin films by vacuum evaporation on glass substrate at a high temperature using the stoichiometric powder. The samples were subjected to the irradiation of 1.26 M eV He{sup +} ion. The effect of irradiation on the optical properties has been investigated for different fluencies of He{sup +}. The thin films were characterized by X-ray diffraction and UV-vis-NIR spectroscopy. It is observed that the band gap of silver indium selenide thin films decreases gradually from 1.17 to 0.82 eV with ion fluency.

  3. Optical and structural properties of chemically deposited CdS thin films on polyethylene naphthalate substrates

    Energy Technology Data Exchange (ETDEWEB)

    Sandoval-Paz, M.G., E-mail: myrnasandoval@udec.cl [Departamento de Fisica, Facultad de Ciencias Fisicas y Matematicas, Universidad de Concepcion, Casilla 160-C, Concepcion (Chile); Ramirez-Bon, R. [Centro de Investigacion y Estudios Avanzados del IPN, Unidad Queretaro, Apdo. Postal 1-798, 76001 Queretaro, Qro. (Mexico)

    2011-11-30

    CdS thin films were deposited on polyethylene naphthalate substrates by means of the chemical bath deposition technique in an ammonia-free cadmium-sodium citrate system. Three sets of CdS films were grown in precursor solutions with different contents of Cd and thiourea maintaining constant the concentration ratios [Cd]/[thiourea] and [Cd]/[sodium citrate] at 0.2 and 0.1 M/M, respectively. The concentrations of cadmium in the reaction solutions were 0.01, 7.5 Multiplication-Sign 10{sup -3} and 6.8 Multiplication-Sign 10{sup -3} M, respectively. The three sets of CdS films were homogeneous, hard, specularly reflecting, yellowish and adhered very well to the plastic substrates, quite similar to those deposited on glass substrates. The structural and optical properties of the CdS films were determined from X-ray diffraction, optical transmission and reflection spectroscopy and atomic force microscopy measurements. We found that the properties of the films depend on both the amount of Cd in the growth solutions and on the deposition time. The increasing of Cd concentration in the reaction solution yield to thicker CdS films with smaller grain size, shorter lattice constant, and higher energy band gap. The energy band gap of the CdS films varied in the range 2.42-2.54 eV depending on the precursor solution. The properties of the films were analyzed in terms of the growth mechanisms during the chemical deposition of CdS layers.

  4. Structural and optical properties of tellurite thin film glasses deposited by pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Munoz-Martin, D.; Fernandez-Navarro, J.M. [Laser Processing Group, Instituto de Optica (CSIC), Serrano 121, 28006 Madrid (Spain); Gonzalo, J., E-mail: j.gonzalo@io.cfmac.csic.es [Laser Processing Group, Instituto de Optica (CSIC), Serrano 121, 28006 Madrid (Spain); Jose, G.; Jha, A. [Institute for Materials Research, University of Leeds, Clarendon Road, Leeds LS2 9JT (United Kingdom); Fierro, J.L.G. [Instituto de Catalisis y Petroleoquimica (CSIC), Marie Curie s/n, 28049 Cantoblanco (Spain); Domingo, C. [Instituto de Estructura de la Materia (CSIC), Serrano 121, 28006 Madrid (Spain); Garcia-Lopez, J. [Centro Nacional de Aceleradores, P. Tecnologico ' Cartuja 93' , 41092 Sevilla (Spain)

    2011-10-31

    Tellurite (TeO{sub 2}-TiO{sub 2}-Nb{sub 2}O{sub 5}) thin film glasses have been produced by pulsed laser deposition at room temperature at laser energy densities in the range of 0.8-1.5 J/cm{sup 2} and oxygen pressures in the range of 3-11 Pa. The oxygen concentration in the films increases with laser energy density to reach values very close to that of the bulk glass at 1.5 J/cm{sup 2}, while films prepared at 1.5 J/cm{sup 2} and pressures above 5 Pa show oxygen concentration in excess of 10% comparing to the glass. X-ray photoelectron spectroscopy shows the presence of elementary Te in films deposited at O{sub 2} pressures {<=} 5 Pa that is not detected at higher pressures, while analysis of Raman spectra of the samples suggests a progressive substitution of TeO{sub 3} trigonal pyramids by TeO{sub 4} trigonal bipyramids in the films when increasing their oxygen content. Spectroscopic ellipsometry analysis combined with Cauchy and effective medium modeling demonstrates the influence of these compositional and structural modifications on the optical response of the films. Since the oxygen content determines their optical response through the structural modifications induced in the films, those can be effectively controlled by tuning the deposition conditions, and films having large n (2.08) and reduced k (< 10{sup -4}) at 1.5 {mu}m have been produced using the optimum deposition conditions.

  5. Effect of thermal annealing on structure and optical band gap of Se66Te25In9 thin films

    Science.gov (United States)

    Dwivedi, D. K.; Pathak, H. P.; Shukla, Nitesh; Kumar, Vipin

    2015-05-01

    Thin films of a-Se66Te25In9 have been deposited onto a chemically cleaned glass substrate by thermal evaporation technique under vacuum. Glassy nature of the films has been ascertained by X-ray diffraction pattern. The analysis of absorption spectra, measured at normal incidence, in the spectral range 400-1100 nm has been used for the optical characterization of thin films under investigation. The effect of thermal annealing on structure and optical band gap (Eg) of a-Se66Te25In9 have been studied.

  6. Effect of deposition pressure on structural, optical and electrical properties of zinc selenide thin films

    Science.gov (United States)

    Sharma, Jeewan; Tripathi, S. K.

    2011-04-01

    ZnSe thin films have been prepared by inert gas condensation method at different gas pressures. The influence of deposition pressure, on structural, optical and electrical properties of polycrystalline ZnSe films have been investigated using X-ray diffraction (XRD), optical transmission and conductivity measurements. The X-ray diffraction study reveals the sphalerite cubic structure of the ZnSe films oriented along the (1 1 1) direction. The structural parameters such as particle size [6.65-22.24 nm], strain [4.01-46.6×10-3 lin-2 m-4] and dislocation density [4.762-18.57×1015 lin m-2] have been evaluated. Optical transmittance measurements indicate the existence of direct allowed optical transition with a corresponding energy gap in the range 2.60-3.00 eV. The dark conductivity (σd) and photoconductivity (σph) measurements, in the temperature range 253-358 K, indicate that the conduction in these materials is through an activated process having two activation energies. σd and σph values decrease with the decrease in the crystallite size. The values of carrier life time have been calculated and are found to decrease with the reduction in the particle size. The conduction mechanism in present samples has been explained, and the density of surface states [9.84-21.4×1013 cm-2] and impurity concentration [4.66-31.80×1019 cm-3] have also been calculated.

  7. Structural and optical properties of manganese oxide thin films deposited by pulsed laser deposition at different substrate temperatures

    Science.gov (United States)

    Jamil, H.; Khaleeq-ur-Rahman, M.; Dildar, I. M.; Shaukat, Saima

    2017-09-01

    We report the use of pulsed laser deposition (PLD) to grow manganese oxide thin films at a fixed low oxygen pressure at different temperatures on silicon (1 0 0) substrates. Structural properties of the thin films were examined using x-ray diffraction and Fourier transform infrared spectroscopy. Surface morphology and topography of the films was determined using atomic force microscopy and optical microscopy, while optical properties of the thin films were studied using spectroscopic ellipsometry. It was found that PLD is a convenient technique to deposit different phases of manganese oxide by tuning the deposition temperature. All measured physical properties such as morphology, topography, crystallite size, and optical band gap were clearly dependent on the substrate temperature chosen.

  8. Optical and structural properties of Cr and Ag thin films deposited on glass substrate

    Science.gov (United States)

    Rauf, A.; Ahmed, K.; Nasim, F.; Khan, A. N.; Gul, A.

    2016-08-01

    Most of the rotating or noting patterns are being developed by using silver plating through chemical coating. Silver layers deteriorate with the passage of time and become less reflective while undergo through cleaning process due to its softness and the results become unpredictable. In this paper an alternate method for development of above mentioned pattern has been demonstrated. Chromium (Cr) and Silver (Ag) thin films of 200nm and 160nm thick respectively have been realized using electron beam evaporation (PVD technique) on quartz substrate. Structural analysis has been carried out by XRD and SEM while optical transmission/reflection has been studied using spectrophotometer. XRD analysis shows that Ag coated thin films exhibit FCC structure while Cr coated thin films reveals a BCC structure. SEM analysis shows almost smooth and uniform surfaces in both cases. After passing through high and low temperature cycles it was found that the results of pattern structures developed by chromium coating were more reliable than obtained through silver platting process.

  9. Structural, optical, and transport properties of nanocrystalline bismuth telluride thin films treated with homogeneous electron beam irradiation and thermal annealing.

    Science.gov (United States)

    Takashiri, Masayuki; Asai, Yuki; Yamauchi, Kazuki

    2016-08-19

    We investigated the effects of homogeneous electron beam (EB) irradiation and thermal annealing treatments on the structural, optical, and transport properties of bismuth telluride thin films. Bismuth telluride thin films were prepared by an RF magnetron sputtering method at room temperature. After deposition, the films were treated with homogeneous EB irradiation, thermal annealing, or a combination of both the treatments (two-step treatment). We employed Williamson-Hall analysis for separating the strain contribution from the crystallite domain contribution in the x-ray diffraction data of the films. We found that strain was induced in the thin films by EB irradiation and was relieved by thermal annealing. The crystal orientation along c-axis was significantly enhanced by the two-step treatment. Scanning electron microscopy indicated the melting and aggregation of nano-sized grains on the film surface by the two-step treatment. Optical analysis indicated that the interband transition of all the thin films was possibly of the indirect type, and that thermal annealing and two-step treatment methods increased the band gap of the films due to relaxation of the strain. Thermoelectric performance was significantly improved by the two-step treatment. The power factor reached a value of 17.2 μW (cm(-1) K(-2)), approximately 10 times higher than that of the as-deposited thin films. We conclude that improving the crystal orientation and relaxing the strain resulted in enhanced thermoelectric performance.

  10. Structural, optical, and transport properties of nanocrystalline bismuth telluride thin films treated with homogeneous electron beam irradiation and thermal annealing

    Science.gov (United States)

    Takashiri, Masayuki; Asai, Yuki; Yamauchi, Kazuki

    2016-08-01

    We investigated the effects of homogeneous electron beam (EB) irradiation and thermal annealing treatments on the structural, optical, and transport properties of bismuth telluride thin films. Bismuth telluride thin films were prepared by an RF magnetron sputtering method at room temperature. After deposition, the films were treated with homogeneous EB irradiation, thermal annealing, or a combination of both the treatments (two-step treatment). We employed Williamson-Hall analysis for separating the strain contribution from the crystallite domain contribution in the x-ray diffraction data of the films. We found that strain was induced in the thin films by EB irradiation and was relieved by thermal annealing. The crystal orientation along c-axis was significantly enhanced by the two-step treatment. Scanning electron microscopy indicated the melting and aggregation of nano-sized grains on the film surface by the two-step treatment. Optical analysis indicated that the interband transition of all the thin films was possibly of the indirect type, and that thermal annealing and two-step treatment methods increased the band gap of the films due to relaxation of the strain. Thermoelectric performance was significantly improved by the two-step treatment. The power factor reached a value of 17.2 μW (cm-1 K-2), approximately 10 times higher than that of the as-deposited thin films. We conclude that improving the crystal orientation and relaxing the strain resulted in enhanced thermoelectric performance.

  11. Impacts of SiO2 planarization on optical thin film properties and laser damage resistance

    Science.gov (United States)

    Day, T.; Wang, H.; Jankowska, E.; Reagan, B. A.; Rocca, J. J.; Stolz, C. J.; Mirkarimi, P.; Folta, J.; Roehling, J.; Markosyan, A.; Route, R. R.; Fejer, M. M.; Menoni, C. S.

    2016-12-01

    Lawrence Livermore National Laboratory (LLNL) and Colorado State University (CSU) have co-developed a planarization process to smooth nodular defects. This process consists of individually depositing then etching tens of nanometers of SiO2 with a ratio of 2:1, respectively. Previous work shows incorporating the angular dependent ion surface etching and unidirectional deposition reduces substrate defect cross-sectional area by 90%. This work investigates the micro-structural and optical modifications of planarized SiO2 films deposited by ion beam sputtering (IBS). It is shown the planarized SiO2 thin films have 3x increase in absorption and 18% reduction in thin film stress as compared to control (as deposited) SiO2. Planarized SiO2 films exhibit 13% increase in RMS surface roughness with respect to the control and super polished fused silica substrates. Laser-induced damage threshold (LIDT) results indicate the planarization process has no effect on the onset fluence but alters the shape of the probability vs fluence trace.

  12. Structure and optical properties of CdS:O thin films

    Energy Technology Data Exchange (ETDEWEB)

    Asaba, Ryo; Wakita, Kazuki [Department of Electrical, Electronics and Computer Engineering, Chiba Institute of Technology, Chiba (Japan); Kitano, Atsushi; Shim, YongGu [Department of Physics and Electronics, Osaka Prefecture University, Sakai, Osaka (Japan); Mamedov, Nazim; Bayramov, Ayaz; Huseynov, Emil; Hasanov, Ilham [Institute of Physics, Azerbaijan National Academy of Science, Baku (Azerbaijan)

    2013-08-15

    We have studied structure and optical properties of CdS:O thin films deposited on soda lime glass substrates by rf magnetron sputtering in the atmosphere of oxygen/argon gases. According to X-ray diffraction and confocal Raman scattering data, the films deposited under oxygen partial pressure below 3% show crystalline structure of CdS. On the other hand, X-ray diffraction, confocal Raman scattering, TEM (transmission electron microscopy) and XPS (X-ray photoelectron spectroscopy) data are indicative of amorphization, nano-crystallization, and inclusion of CdO{sub 2} in CdS:O thin films obtained under oxygen partial pressure of 5%. The last films have shown significantly increased transmittance in a spectral range above the energy gap of CdS. The origin of this transmittance is discussed by taking into account redistribution of electronic density-of-states in amorphous phase, quantum size effect and contribution of CdO{sub 2}. (copyright 2013 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  13. Optical absorption of sodium copper chlorophyllin thin films in UV-vis-NIR region.

    Science.gov (United States)

    Farag, A A M

    2006-11-01

    The optical absorption studies of sodium copper chlorophyllin thin films (SCC), prepared by spray pyrolysis, in the UV-vis-NIR region was reported for the first time. Several new discrete transitions are observed in the UV-vis region of the spectra in addition to a strong continuum component in the IR region. The spectra of the infrared absorption allow characterization of vibration modes for the powder and thin films of SCC. The absorption spectrum recorded in the UV-vis region showed different absorption bands, namely the Soret (B) in the region 340-450 nm and Q-band in the region 600-700 nm and other band labeled N in the 240-320 region. Some important spectral parameters namely optical absorption coefficient (alpha), molar extinction coefficient (epsilon(molar)), oscillator strength (f), electric dipole strength (q(2)) and absorption half bandwidth (Deltalambda) of the principle optical transitions were evaluated. The analysis of the absorption coefficient in the absorption region revealed direct transitions and the energy gap was estimated as 1.63 eV. Discussion of the obtained results and their comparison with the previous published data are also given.

  14. Nobel metal alloyed thin-films with optical properties on demand

    Science.gov (United States)

    Gong, Chen; Leite, Marina S.

    Metallic materials with tunable optical responses can enable the unprecedented control of optoelectronic and nanophotonic devices with enhanced performance, such as thin-film solar cells, metamaterials and metasurfaces for tunable absorbers and optical filters, among others. Here we present the alloying of noble metals, Ag, Au and Cu, to develop a novel class of material with optical response not achieved by pure metals. We fabricate binary mixtures with controlled chemical composition by co-sputtering. Ellipsometry and surface plasmon polariton coupling angle measurements are in excellent agreement when determining the real part of the dielectric function (ɛ1). Surprisingly, in some cases, a mixture provides a material with higher surface plasmon polariton quality factor than the corresponding pure metals. Our approach paves the way to implement metallic nanostructures with tunable absorption/transmission, overcoming the current limitation of the dielectric function of noble metals.

  15. Dynamics of double-pulse laser produced titanium plasma inferred from thin film morphology and optical emission spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Krstulović, N., E-mail: niksak@ifs.hr [Institute of Physics, Bijenička 46, HR-10000 Zagreb (Croatia); Salamon, K., E-mail: ksalamon@ifs.hr [Institute of Physics, Bijenička 46, HR-10000 Zagreb (Croatia); Modic, M., E-mail: martina.modic@ijs.si [Jožef Stefan Institute, Jamova 39, 1001 Ljubljana (Slovenia); Bišćan, M., E-mail: mbiscan@ifs.hr [Institute of Physics, Bijenička 46, HR-10000 Zagreb (Croatia); Milat, O., E-mail: milat@ifs.hr [Institute of Physics, Bijenička 46, HR-10000 Zagreb (Croatia); Milošević, S., E-mail: slobodan@ifs.hr [Institute of Physics, Bijenička 46, HR-10000 Zagreb (Croatia)

    2015-05-01

    In this paper, dynamics of double-pulse laser produced titanium plasma was studied both directly using optical emission spectroscopy (OES) and indirectly from morphological properties of deposited thin films. Both approaches yield consistent results. Ablated material was deposited in a form of thin film on the Si substrate. During deposition, plasma dynamics was monitored using optical emission spectroscopy with spatial and temporal resolutions. The influence of ablation mode (single and double) and delay time τ (delay between first and second pulses in double-pulse mode) on plasma dynamics and consequently on morphology of deposited Ti-films was studied using X-ray reflectivity and atomic force microscopy. Delay time τ was varied from 170 ns to 4 μs. The results show strong dependence of both emission signal and Ti-film properties, such as thickness, density and roughness, on τ. In addition, correlation of average density and thickness of film is observed. These results are discussed in terms of dependency of angular distribution and kinetic energy of plasma plume particles on τ. Advantages of using double-pulse laser deposition for possible application in thin film production are shown. - Highlights: • Ti-thin films produced by single and double pulse laser ablation mode. • Ablation mode and delay time influenced plasma plume and film characteristics. • Films are most compact for optimized delay time (thinnest, smoothest and most dense). • Plasma dynamics can be inferred from film characteristics.

  16. Structural and Optical Studies of Magnesium Doped Zinc Oxide Thin Films

    OpenAIRE

    Arpana Agrawal; Tanveer Ahmad Dar; Pratima Sen

    2013-01-01

    The paper describes the structural and optical properties of Magnesium doped Zinc Oxide (Mg  3.5 %, 6 %, 9 %, 12 % by weight) thin films prepared by pulsed laser deposition technique. The samples are characterized by X-ray diffraction technique, Ultra-violet visible absorption spectroscopy, X-ray photoelectron spectroscopy. X-ray diffraction results reveal the polycrystalline nature of samples with no impurity or secondary phase formation. Ultra-violet visible absorption spectroscopy studies...

  17. Optical properties of PZT thin films deposited on a ZnO buffer layer

    OpenAIRE

    Schneider, T.; Leduc, D; Cardin, J.; LUPI, C; Barreau, N; Gundel, H.

    2007-01-01

    International audience; The optical properties of lead zirconate titanate (PZT) thin films deposited on ZnO were studied by m-lines spectroscopy. In order to retrieve the refractive index and the thickness of both layers from the m-lines spectra, we develop a numerical algorithm for the case of a two-layer system and show its robustness in the presence of noise. The sensitivity of the algorithm of the two-layer model allows us to relate the observed changes in the PZT refractive index to the ...

  18. Optical properties of PZT thin films deposited on a ZnO buffer layer

    OpenAIRE

    Schneider, T.; Leduc, D; Cardin, J.; LUPI, C; Barreau, N; Gundel, H.

    2015-01-01

    The optical properties of lead zirconate titanate (PZT) thin films deposited on ZnO were studied by m-lines spectroscopy. In order to retrieve the refractive index and the thickness of both layers from the m-lines spectra, we develop a numerical algorithm for the case of a two-layer system and show its robustness in the presence of noise. The sensitivity of the algorithm of the two-layer model allows us to relate the observed changes in the PZT refractive index to the PZT structural change du...

  19. Selective inorganic thin films

    Energy Technology Data Exchange (ETDEWEB)

    Phillips, M.L.F.; Weisenbach, L.A.; Anderson, M.T. [Sandia National Laboratories, Albuquerque, NM (United States)] [and others

    1995-05-01

    This project is developing inorganic thin films as membranes for gas separation applications, and as discriminating coatings for liquid-phase chemical sensors. Our goal is to synthesize these coatings with tailored porosity and surface chemistry on porous substrates and on acoustic and optical sensors. Molecular sieve films offer the possibility of performing separations involving hydrogen, air, and natural gas constituents at elevated temperatures with very high separation factors. We are focusing on improving permeability and molecular sieve properties of crystalline zeolitic membranes made by hydrothermally reacting layered multicomponent sol-gel films deposited on mesoporous substrates. We also used acoustic plate mode (APM) oscillator and surface plasmon resonance (SPR) sensor elements as substrates for sol-gel films, and have both used these modified sensors to determine physical properties of the films and have determined the sensitivity and selectivity of these sensors to aqueous chemical species.

  20. Structural and optical properties of nano-structured CdS thin films prepared by chemical bath deposition

    Energy Technology Data Exchange (ETDEWEB)

    Bai, Rekha, E-mail: rekha.mittal07@gmail.com; Kumar, Dinesh; Chaudhary, Sujeet; Pandya, Dinesh K. [Thin Film Laboratory, Physics Department, Indian Institute of Technology Delhi, New Delhi-110016 (India)

    2016-05-06

    Cadmium sulfide (CdS) thin films have been deposited on conducting glass substrates by chemical bath deposition (CBD) technique. The effect of precursor concentration on the structural, morphological, compositional, and optical properties of the CdS films has been studied. Crystal structure of these CdS films is characterized by X-ray diffraction (XRD) and it reveals polycrystalline structure with mixture of cubic and wurtzite phases with grain size decreasing as precursor concentration is increased. Optical studies reveal that the CdS thin films have high transmittance in visible spectral region reaching 90% and the films possess direct optical band gap that decreases from 2.46 to 2.39 eV with decreasing bath concentration. Our study suggests that growth is nucleation controlled.

  1. Impact of thermal annealing on optical properties of vacuum evaporated CdTe thin films for solar cells

    Science.gov (United States)

    Chander, Subhash; Purohit, A.; Lal, C.; Nehra, S. P.; Dhaka, M. S.

    2016-05-01

    In this paper, the impact of thermal annealing on optical properties of cadmium telluride (CdTe) thin films is investigated. The films of thickness 650 nm were deposited on thoroughly cleaned glass substrate employing vacuum evaporation followed by thermal annealing in the temperature range 250-450 °C. The as-deposited and annealed films were characterized using UV-Vis spectrophotometer. The optical band gap is found to be decreased from 1.88 eV to 1.48 eV with thermal annealing. The refractive index is found to be in the range 2.73-2.92 and observed to increase with annealing treatment. The experimental results reveal that the thermal annealing plays an important role to enhance the optical properties of CdTe thin films and annealed films may be used as absorber layer in CdTe/CdS solar cells.

  2. Effect of thickness on surface morphology, optical and humidity sensing properties of RF magnetron sputtered CCTO thin films

    Energy Technology Data Exchange (ETDEWEB)

    Ahmadipour, Mohsen [Structural Materials Niche Area, School of Materials and Mineral Resources Engineering, Universiti Sains Malaysia, Engineering Campus, 14300 Nibong Tebal, Penang (Malaysia); Ain, Mohd Fadzil [School of Electrical and Electronic Engineering, Universiti Sains Malaysia, Engineering Campus, 14300 Nibong Tebal, Penang (Malaysia); Ahmad, Zainal Arifin, E-mail: srzainal@usm.my [Structural Materials Niche Area, School of Materials and Mineral Resources Engineering, Universiti Sains Malaysia, Engineering Campus, 14300 Nibong Tebal, Penang (Malaysia)

    2016-11-01

    Highlights: • CCTO thin film was synthesized by RF magnetron sputtering successfully. • Increase in thickness lead to increase in grain size and decrease in band gap. • Short response times and recovery times of lead CCTO humidity sensor. • Sensor could detect humidity range (30–90%). - Abstract: In this study, calcium copper titanate (CCTO) thin films were deposited on ITO substrates successfully by radio frequency (RF) magnetron sputtering method in argon atmosphere. The CCTO thin films present a polycrystalline, uniform and porous structure. The surface morphology, optical and humidity sensing properties of the synthesized CCTO thin films have been studied by X-ray diffraction (XRD), atomic force microscopy (AFM), field emission scanning electron microscopy (FESEM), energy-dispersive X-ray spectroscopy (EDX), UV–vis spectrophotometer and current-voltage (I–V) analysis. XRD and AFM confirmed that the intensity of peaks and pore size of CCTO thin films were enhanced by increasing the thin films. Tauc plot method was adopted to estimate the optical band gaps. The surface structure and energy band gaps of the deposited films were affected by film thickness. Energy band gap of the layers were 3.76 eV, 3.68 eV and 3.5 eV for 200 nm, 400 nm, and 600 nm CCTO thin films layer, respectively. The humidity sensing properties were measured by using direct current (DC) analysis method. The response times were 12 s, 22 s, and 35 s while the recovery times were 500 s, 600 s, and 650 s for 200 nm, 400 nm, and 600 nm CCTO thin films, respectively at humidity range of 30–90% relative humidity (RH).

  3. Nonlinear optical properties of poly(methyl methacrylate) thin films doped with Bixa Orellana dye

    Energy Technology Data Exchange (ETDEWEB)

    Zongo, S., E-mail: sidiki@tlabs.ac.za [UNESCO-UNISA Africa Chair in Nanosciences/Nanotechnology, College of Graduate Studies, University of South Africa, Muckleneuk ridge, POBox 392, Pretoria (South Africa); Nanosciences African Network (NANOAFNET), iThemba LABS-National Research Foundation, 1 OldFaure road, Somerset West 7129, POBox 722, Somerset West, Western Cape Province (South Africa); Kerasidou, A.P. [LUNAM Université, Université d’Angers, CNRS UMR 6200, Laboratoire MOLTECH-Anjou, 2 Bd Lavoisier, 49045 Angers Cedex (France); Sone, B.T.; Diallo, A. [UNESCO-UNISA Africa Chair in Nanosciences/Nanotechnology, College of Graduate Studies, University of South Africa, Muckleneuk ridge, POBox 392, Pretoria (South Africa); Nanosciences African Network (NANOAFNET), iThemba LABS-National Research Foundation, 1 OldFaure road, Somerset West 7129, POBox 722, Somerset West, Western Cape Province (South Africa); Mthunzi, P. [Council for Scientific and Industrial Research, P O Box 395, Pretoria 0001 (South Africa); Iliopoulos, K. [LUNAM Université, Université d’Angers, CNRS UMR 6200, Laboratoire MOLTECH-Anjou, 2 Bd Lavoisier, 49045 Angers Cedex (France); Institute of Chemical Engineering Sciences, Foundation for Research and Technology Hellas (FORTH/ICE-HT), 26504 Patras (Greece); Nkosi, M. [Nanosciences African Network (NANOAFNET), iThemba LABS-National Research Foundation, 1 OldFaure road, Somerset West 7129, POBox 722, Somerset West, Western Cape Province (South Africa); and others

    2015-06-15

    Highlights: • We studied the linear and nonlinear optical properties of hybrid Bixa Orellana dye doped PMMA thin film. • We investigated the linear optical properties by means of UV/Vis, FTIR and Fluorescence. • We used Tauc - Lorentz model to evaluate linear optical parameters (n &k) with relative maximum of 1.456 at 508.5, 523.79 and 511.9 nm for n is observed while the maximum of k varies from 0.070 to 0.080. • We evaluated nonlinear third order susceptibility which was found to be 1.00 × 10{sup −21} m{sup 2} V{sup −2} or 0.72 × 10{sup −13} esu. - Abstract: Natural dyes with highly delocalized π-electron systems are considered as promising organic materials for nonlinear optical applications. Among these dyes, Bixa Orellana dye with extended π-electron delocalization is one of the most attractive dyes. Bixa Orellana dye-doped Poly(methyl methacrylate) (PMMA) thin films were prepared through spin coating process for linear and nonlinear optical properties investigation. Atomic force microscopy (AFM) was used to evaluate the roughness of the thin films. The optical constants n and k were evaluated by ellipsometric spectroscopy. The refractive index had a maximum of about 1.456 at 508.5, 523.79 and 511.9 nm, while the maximum of k varies from 0.070 to 0.080 with the thickness. The third order nonlinear optical properties of the hybrid Bixa Orellana dye-PMMA polymer were investigated under 30 ps laser irradiation at 1064 nm with a repetition rate of 10 Hz. In particular the third-order nonlinear susceptibility has been determined by means of the Maker Fringes technique. The nonlinear third order susceptibility was found to be 1.00 × 10{sup −21} m{sup 2} V{sup −2} or 0.72 × 10{sup −13} esu. Our studies provide concrete evidence that the hybrid-PMMA composites of Bixa dye are prospective candidates for nonlinear material applications.

  4. Optical and physical properties of different composition of In xSe 1-x thin films

    Science.gov (United States)

    El-Kabnay, N.; Shaaban, E. R.; Afify, N.; Abou-sehly, A. M.

    2008-01-01

    Thin film binary alloys of In xSe 1-x (0.05⩽ x⩽0.30) have been prepared by the thermal evaporation technique. The optical transmission and reflection spectrum of these films were measured in the range 300-1100 nm. Both refractive index, n and extinction coefficient k have been determined from transmission and reflection measurements in terms of Murmann's equations. The dispersion of the refractive index is discussed in terms of the single-oscillator Wemple-DiDomenico model. The width of band tail is determined and the optical absorption edge is described using the ‘non-direct transition’ model proposed by Tauc. Finally, the relationship between the optical gap and chemical composition in In xSe 1-x amorphous system is discussed in terms of the average heat of atomization Hs and average coordination number Nc. The results of these calculations can be used rationalize the observed optical properties of these materials. Finally, the chemical bond approach has been also applied to interpret the decrease of the glass optical gap with increasing In content.

  5. Characterization of ion-assisted induced absorption in A-Si thin-films used for multivariate optical computing

    Science.gov (United States)

    Nayak, Aditya B.; Price, James M.; Dai, Bin; Perkins, David; Chen, Ding Ding; Jones, Christopher M.

    2015-06-01

    Multivariate optical computing (MOC), an optical sensing technique for analog calculation, allows direct and robust measurement of chemical and physical properties of complex fluid samples in high-pressure/high-temperature (HP/HT) downhole environments. The core of this MOC technology is the integrated computational element (ICE), an optical element with a wavelength-dependent transmission spectrum designed to allow the detector to respond sensitively and specifically to the analytes of interest. A key differentiator of this technology is it uses all of the information present in the broadband optical spectrum to determine the proportion of the analyte present in a complex fluid mixture. The detection methodology is photometric in nature; therefore, this technology does not require a spectrometer to measure and record a spectrum or a computer to perform calculations on the recorded optical spectrum. The integrated computational element is a thin-film optical element with a specific optical response function designed for each analyte. The optical response function is achieved by fabricating alternating layers of high-index (a-Si) and low-index (SiO2) thin films onto a transparent substrate (BK7 glass) using traditional thin-film manufacturing processes (e.g., ion-assisted e-beam vacuum deposition). A proprietary software and process are used to control the thickness and material properties, including the optical constants of the materials during deposition to achieve the desired optical response function. The ion-assisted deposition is useful for controlling the densification of the film, stoichiometry, and material optical constants as well as to achieve high deposition growth rates and moisture-stable films. However, the ion-source can induce undesirable absorption in the film; and subsequently, modify the optical constants of the material during the ramp-up and stabilization period of the e-gun and ion-source, respectively. This paper characterizes the unwanted

  6. Effect of Sb on the optical properties of the Ge-Se chalcogenide thin films

    Science.gov (United States)

    Abdel-Wahab, F.; Ali karar, N. N.; El Shaikh, H. A.; Salem, R. M.

    2013-08-01

    Thin films of Ge30-xSbxSe70 (x=0, 5, 10 and 15) were prepared by thermal evaporation technique. All samples were confirmed as amorphous according to XRD results. The complex dielectric functions and optical parameters of the films determined by using the Swanepoel's method from transmittance spectra at room temperature in the range of wavelength 400-1100 nm. It has been found that by increasing Sb content, the optical band gap decreases, while the refractive index and the extinction coefficient increase. The optical energy gap of the films under test was discussed in terms of the chemically ordered model (COM) and random covalent network model (RCNM). We confirmed, using Raman spectroscopy, by addition of Sb the intensity of Ge-Ge and Ge-Se bands decreased; however, Sb-Se, and Se-chain band increased, in agreement with COM and RCNM. The results of the refractive index were studied using the Wemple equation. The variations of the refractive index and real part of dielectric constant associated with the changes of the density were examined with the well-known Lorentz-Lorenz relation. The experimental results were found to be in good agreement with those of theoretical ones.

  7. Spectroscopic ellipsometry investigations of the optical properties of manganese doped bismuth vanadate thin films

    Energy Technology Data Exchange (ETDEWEB)

    Kumari, Neelam; Krupanidhi, S.B. [Materials Research Center, Indian Institute of Science, Bangalore 560012 (India); Varma, K.B.R., E-mail: kbrvarma@mrc.iisc.ernet.in [Materials Research Center, Indian Institute of Science, Bangalore 560012 (India)

    2010-04-15

    The optical properties of Bi{sub 2}V{sub 1-x}Mn{sub x}O{sub 5.5-x} {l_brace}x = 0.05, 0.1, 0.15 and 0.2 at.%{r_brace} thin films fabricated by pulsed laser deposition on platinized silicon substrates were studied in UV-visible spectral region (1.51-4.17 eV) using spectroscopic ellipsometry. The optical constants and thicknesses of these films have been obtained by fitting the ellipsometric data ({Psi} and {Delta}) using a multilayer four-phase model system and a relaxed Lorentz oscillator dispersion relation. The surface roughness and film thickness obtained by spectroscopic ellipsometry were found to be consistent with the results obtained by atomic force and scanning electron microscopy. The refractive index measured at 650 nm does not show any marginal increase with Mn content. Further, the extinction coefficient does not show much decrease with increasing Mn content. An increase in optical band gap energy from 2.52 to 2.77 eV with increasing Mn content from x = 0.05 to 0.15 was attributed to the increase in oxygen ion vacancy disorder.

  8. Effect of annealing temperature on the optical properties of thermally evaporated tin phthalocyanine thin films

    Science.gov (United States)

    El-Nahass, M. M.; Yaghmour, S.

    2008-12-01

    Thin films of tin phthalocyanine were prepared on quartz substrates by thermal evaporation technique. The optical properties were investigated using a spectrophotometric measurement of transmittance and reflectance at normal incidence of light in the wavelength range 200-2500 nm for the as-deposited and the annealed films. Absorption spectra of the films show intense B, N and C bands in the UV region followed by Q-band in the visible region. The values of the oscillator strength and the electric dipole strength were estimated. The optical constants were accurately determined using Murmann's equations, which allow obtaining the real and the imaginary parts of the complex refractive index. The absorption analysis has been also performed to determine the type of electronic transition and the optical energy band gap. The dispersion of the refractive index, n, is discussed in terms of the single oscillator model. The dispersion parameters and the ratio of free carrier concentration to the free carrier effective mass were also estimated.

  9. Effect of annealing temperature on the optical properties of thermally evaporated tin phthalocyanine thin films

    Energy Technology Data Exchange (ETDEWEB)

    El-Nahass, M.M. [Physics Department, Faculty of Education, Ain Shams University, Rorxy, Cairo 11757 (Egypt)], E-mail: prof_nahhas@yahoo.com; Yaghmour, S. [Physics Department Faculty of Science, King Abdul Aziz University, Jeddah (Saudi Arabia)

    2008-12-30

    Thin films of tin phthalocyanine were prepared on quartz substrates by thermal evaporation technique. The optical properties were investigated using a spectrophotometric measurement of transmittance and reflectance at normal incidence of light in the wavelength range 200-2500 nm for the as-deposited and the annealed films. Absorption spectra of the films show intense B, N and C bands in the UV region followed by Q-band in the visible region. The values of the oscillator strength and the electric dipole strength were estimated. The optical constants were accurately determined using Murmann's equations, which allow obtaining the real and the imaginary parts of the complex refractive index. The absorption analysis has been also performed to determine the type of electronic transition and the optical energy band gap. The dispersion of the refractive index, n, is discussed in terms of the single oscillator model. The dispersion parameters and the ratio of free carrier concentration to the free carrier effective mass were also estimated.

  10. Magneto-Optical Thin Films for On-Chip Monolithic Integration of Non-Reciprocal Photonic Devices

    Directory of Open Access Journals (Sweden)

    Mehmet Cengiz Onbasli

    2013-11-01

    Full Text Available Achieving monolithic integration of nonreciprocal photonic devices on semiconductor substrates has been long sought by the photonics research society. One way to achieve this goal is to deposit high quality magneto-optical oxide thin films on a semiconductor substrate. In this paper, we review our recent research activity on magneto-optical oxide thin films toward the goal of monolithic integration of nonreciprocal photonic devices on silicon. We demonstrate high Faraday rotation at telecommunication wavelengths in several novel magnetooptical oxide thin films including Co substituted CeO2−δ, Co- or Fe-substituted SrTiO3−δ, as well as polycrystalline garnets on silicon. Figures of merit of 3~4 deg/dB and 21 deg/dB are achieved in epitaxial Sr(Ti0.2Ga0.4Fe0.4O3−δ and polycrystalline (CeY2Fe5O12 films, respectively. We also demonstrate an optical isolator on silicon, based on a racetrack resonator using polycrystalline (CeY2Fe5O12/silicon strip-loaded waveguides. Our work demonstrates that physical vapor deposited magneto-optical oxide thin films on silicon can achieve high Faraday rotation, low optical loss and high magneto-optical figure of merit, therefore enabling novel high-performance non-reciprocal photonic devices monolithically integrated on semiconductor substrates.

  11. Effect of annealing on the optical properties of the ion beam sputtered NiO thin film

    Science.gov (United States)

    Chouhan, Romita; Baraskar, Priyanka; Dar, Tanveer A.; Agrawal, Arpana; Gupta, Mukul; Sen, Pranay K.; Sen, Pratima.

    2017-05-01

    Effect of annealing on optical characteristics of Nickel oxide thin films deposited by ion beam sputtering technique from a Ni target in a mixture of oxygen and argon gas on to a glass substrate has been studied. The deposited films were characterized in as deposited state(S1) and after annealing(S2) at temp of 523 K. Crystalline properties of films were investigated using X-ray diffraction technique from which we found that both S1 and S2 shows the polycrystalline nature with preferential growth along (111) plane. The transmittance of the S2 films was decreased. The surface morphology of the film was studied using atomic force microscopy (AFM). The nonlinear optical properties of the films were obtained using z-scan technique which reveals that the nonlinear absorption coefficient of S2 films is larger than that of S1 samples. Improved nonlinearity suggests the utility of the grown films for optoelectronic device application.

  12. Optical properties of ZnO thin films on SiO2 substrates deposited by radio frequency magnetron sputtering

    Institute of Scientific and Technical Information of China (English)

    Deping Xiong(熊德平); Xiqing Zhang(张希清); Jing Wang(王晶); Peng Lin(林鹏); Shihua Huang(黄世华)

    2004-01-01

    The optical properties of both the annealed and as-deposited ZnO thin films by radio frequency (RF)magnetron sputtering on SiO2 substrates were studied. In the annealed films, two pronounced well defined exciton absorption peaks for the A and B excitons were obtained in the absorption spectra, a strong free exciton emission without deep-level emissions was observed in the photoluminescence (PL) spectra at room temperature. It was found that annealing the films in oxygen dramatically improved the optical properties and the quality of the films.

  13. Physical and optical properties of binary amorphous selenium-antimony thin films

    Science.gov (United States)

    Sharma, Pankaj; Sharma, Ishu; Katyal, S. C.

    2009-03-01

    Amorphous thin films with compositions Se1-xSbx (x =0, 0.025, 0.05, 0.075, and 0.10 at. %) have been deposited by thermal evaporation (at ˜10-4 Pa) from bulk samples. The compositional dependence of their optical properties, refractive index, extinction coefficient, absorption coefficient, and optical band gap with increasing Sb content is investigated using transmission spectra in the range of 400-1200 nm. The refractive-index dispersion has been analyzed on the basis of the Wemple-DiDomenico single-oscillator approach. It has been found that the refractive index increases with increasing Sb content. The behavior of the optical band gap, when the composition of the material is varied, shows, as expected, just the opposite trends. The optical band gap decreases from 2.025 to 1.753 eV with ±0.001 eV uncertainty. Band gap calculated theoretically also shows a decrease with the increase in Sb content. The optical behavior is supported by physical properties, i.e., decrease in optical band gap is supported by the decrease in cohesive energy of the system. Some other physical properties, viz., coordination number, lone-pair electrons, and glass transition temperature, are also investigated theoretically. The optical results may lead to yield more sensitive detectors based on amorphous selenium, and physical properties may be useful in achieving more stable alloys which are favorable in x-ray imaging applications.

  14. Structural and optical characteristics of Ce, Nd, Gd, and Dy-doped Al2O3 thin films

    Science.gov (United States)

    Varpe, Ashwini S.; Deshpande, Mrinalini D.

    2017-07-01

    We present the optical properties of rare earth (RE)-doped Al_2O_3 thin films and discuss their possible use in applications like gate dielectric material and in coating industry. Aluminum oxide films doped with RE elements such as Ce, Nd, Gd, and Dy are synthesized on glass substrate using ultrasonic spray pyrolysis technique at 400°C. The concentration of rare earth element is varied from 0.5 to 5 mol% in 0.1 M solution of Al2O3. The X-ray diffraction analysis indicates that the thin films deposited with and without rare earth doping have an amorphous structure. Further, the optical properties of RE-doped Al2O3 thin films are studied by using UV-visible spectroscopy and photoluminescence measurement. The band gap is found to be 4.06 eV for Al2O3 thin film. A small blue shift is seen in the optical spectra of RE-doped samples as compared to undoped Al2O3 film. Dielectric constant of alumina thin film increases with doping of Gd and Dy while it decreases with Ce and Nd doping. Concentration quenching effects are observed in the photoluminescence spectra of Ce, Nd, Gd, and Dy-doped Al_2O_3 films. Among all these RE-doped Al2O3 thin films, Gd and Dy-doped Al2O3 films exhibit a potential for the construction of dielectric gate in transistors or as a coating material in the semiconductor industry.

  15. Structural and optical characteristics of Ce, Nd, Gd, and Dy-doped $\\rm{Al_{2}O_{3}}$ thin films

    Indian Academy of Sciences (India)

    ASHWINI S VARPE; MRINALINI D DESHPANDE

    2017-07-01

    We present the optical properties of rare earth (RE)-doped $\\rm{Al_{2}O_{3}}$ thin films and discuss their possible use in applications like gate dielectric material and in coating industry. Aluminum oxide films doped with RE elements such as Ce, Nd, Gd, and Dy are synthesized on glass substrate using ultrasonic spray pyrolysis technique at 400$^{\\circ}$C. The concentration of rare earth element is varied from 0.5 to 5 mol% in 0.1 M solution of $\\rm{Al_{2}O_{3}}$. The X-ray diffraction analysis indicates that the thin films deposited with and without rare earth doping have an amorphous structure. Further, the optical properties of RE-doped $\\rm{Al_{2}O_{3}}$ thin films are studied by using UV–visible spectroscopy and photoluminescence measurement. The band gap is found to be 4.06eV for $\\rm{Al_[2}O_{3}}$ thin film. A small blue shift is seen in the optical spectra of RE-doped samples as compared to undoped $\\rm{Al_[2}O_{3}}$ film. Dielectric constant of alumina thin film increases with doping of Gd and Dy while it decreases with Ce and Nd doping. Concentration quenching effects are observed in the photoluminescence spectra of Ce, Nd, Gd, and Dy-doped $\\rm{Al_[2}O_{3}}$ films. Among all these RE-doped $\\rm{Al_[2}O_{3}}$ thin films, Gd and Dy-doped $\\rm{Al_[2}O_{3}}$ films exhibit a potential for the construction of dielectric gate in transistors or as a coating material in the semiconductor industry.

  16. Ellipsometric analysis and optical absorption characterization of gallium phosphide nanoparticulate thin film

    Institute of Scientific and Technical Information of China (English)

    Zhang Qi-Xian; Wei Wen-Sheng; Ruan Fang-Ping

    2011-01-01

    Gallium phosphide (GaP)nanoparticulate thin films were easily fabricated by colloidal suspension deposition via GaP nanoparticles dispersed in N,N-dimethylformamide. The microstructure of the film was performed by x-ray diffraction, high resolution transmission electron microscopy and field emission scanning electron microscopy. The film was further investigated by spectroscopic ellipsometry.After the model GaP+void|Si02 was built and an effective medium approximation was adopted, the values of the refractive index n and the extinction coefficient k were calculated for the energy range of 0.75 eV-4.0 eV using the dispersion formula in DeltaPsi2 software. The absorption coefficient of the film was calculated from its k and its energy gaps were further estimated according to the Tauc equation, which were further verified by its fluorescence spectrum measurement. The structure and optical absorption properties of the nanoparticulate films are promising for their potential applications in hybrid solar cells.

  17. Impact of Argon gas on optical and electrical properties of Carbon thin films

    Energy Technology Data Exchange (ETDEWEB)

    Usman, Arslan, E-mail: arslan.usman@gmail.com [Department of Physics, COMSATS Institute of Information Technology, Lahore (Pakistan); Rafique, M.S. [Department of Physics, University of Engineering & Technology, Lahore 54890 (Pakistan); Shaukat, S.F. [Department of Physics, COMSATS Institute of Information Technology, Lahore (Pakistan); Siraj, Khurram [Department of Physics, University of Engineering & Technology, Lahore 54890 (Pakistan); Ashfaq, Afshan [Institute of Nuclear Medicine and Oncology Lahore (INMOL), 54000 Pakistan (Pakistan); Anjum, Safia [Department of Physics, Lahore College for Women University (Pakistan); Imran, Muhammad; Sattar, Abdul [Department of Physics, COMSATS Institute of Information Technology, Lahore (Pakistan)

    2016-12-15

    Nanostructured thin films of carbon were synthesized and investigated for their electrical, optical, structural and surface properties. Pulsed Laser Deposition (PLD) technique was used for the preparation of these films under Argon gas environment. A KrF Laser (λ=248 nm) was used as source of ablation and plasma formation. It was observed that the carbon ions and the background gas environment has deep impact on the morphology as well as on the microstructure of the films. Time of Flight (TOF) method was used to determine the energies of the ablated carbon ions. The morphology of film surfaces deposited at various argon pressure was analysed using an atomic force microscope. The Raman spectroscopic measurement reveal that there is shift in phase from sp{sup 3} to sp{sup 2} and a decrease in FWHM of G band, which is a clear indication of enhanced graphitic clusters. The electrical resistivity was also reduced from 85.3×10{sup −1} to 2.57×10{sup −1} Ω-cm. There is an exponential decrease in band gap E{sub g} of the deposited films from 1.99 to 1.37 eV as a function of argon gas pressure.

  18. Optical, structural and electrical properties of Mn doped tin oxide thin films

    Indian Academy of Sciences (India)

    Rajeeb Brahma; M Ghanashyam Krishna; A K Bhatnagar

    2006-06-01

    Mn doped SnO thin films have been fabricated by extended annealing of Mn/SnO2 bilayers at 200°C in air for 110 h. The dopant concentration was varied by controlling the thickness of the metal layer. The overall thickness of the film was 115 nm with dopant concentration between 0 and 30 wt% of Mn. The films exhibit nanocrystalline size (10–20 nm) and presence of both SnO and SnO2. The highest transmission observed in the films was 75% and the band gap varied between 2.7 and 3.4 eV. Significantly, it was observed that at a dopant concentration of ∼ 4 wt% the transmission in the films reached a minimum accompanied by a decrease in the optical band gap. At the same value of dopant concentration the resistivity also reached a peak. This behaviour appears to be a consequence of valence fluctuation in Sn between the 2+ and 4+ states. The transparent conductivity behaviour fits into a model that attributes it to the presence of Sn interstitials rather than oxygen vacancies alone in the presence of Sn2+.

  19. Impact of Argon gas on optical and electrical properties of Carbon thin films

    Science.gov (United States)

    Usman, Arslan; Rafique, M. S.; Shaukat, S. F.; Siraj, Khurram; Ashfaq, Afshan; Anjum, Safia; Imran, Muhammad; Sattar, Abdul

    2016-12-01

    Nanostructured thin films of carbon were synthesized and investigated for their electrical, optical, structural and surface properties. Pulsed Laser Deposition (PLD) technique was used for the preparation of these films under Argon gas environment. A KrF Laser (λ=248 nm) was used as source of ablation and plasma formation. It was observed that the carbon ions and the background gas environment has deep impact on the morphology as well as on the microstructure of the films. Time of Flight (TOF) method was used to determine the energies of the ablated carbon ions. The morphology of film surfaces deposited at various argon pressure was analysed using an atomic force microscope. The Raman spectroscopic measurement reveal that there is shift in phase from sp3 to sp2 and a decrease in FWHM of G band, which is a clear indication of enhanced graphitic clusters. The electrical resistivity was also reduced from 85.3×10-1 to 2.57×10-1 Ω-cm. There is an exponential decrease in band gap Eg of the deposited films from 1.99 to 1.37 eV as a function of argon gas pressure.

  20. Carbon-doped Sb{sub 2}S{sub 3} thin films: Structural, optical and electrical properties

    Energy Technology Data Exchange (ETDEWEB)

    Cardenas, Emma; Arato, A.; Das Roy, T.K.; Alan Castillo, G.; Krishnan, B. [Facultad de Ingenieria Mecanica y Electrica, Universidad Autonoma de Nuevo Leon, San Nicolas de los Garza, Nuevo Leon (Mexico); Perez-Tijerina, E. [Facultad de Ciencias Fisico y Matematica, Universidad Autonoma de Nuevo Leon, San Nicolas de los Garza, Nuevo Leon (Mexico)

    2009-01-15

    We report the modification of electrical properties of chemical-bath-deposited antimony sulphide (Sb{sub 2}S{sub 3}) thin films by thermal diffusion of carbon. Sb{sub 2}S{sub 3} thin films were obtained from a chemical bath containing SbCl{sub 3} and Na{sub 2}S{sub 2}O{sub 3} salts at room temperature (27 C) on glass substrates. A carbon thin film was deposited on Sb{sub 2}S{sub 3} film by arc vacuum evaporation and the Sb{sub 2}S{sub 3}-C layer was subjected to heating at 300 C in nitrogen atmosphere or in low vacuum for 30 min. The value of resistivity of Sb{sub 2}S{sub 3} thin films was substantially reduced from 10{sup 8} {omega} cm for undoped condition to 10{sup 2} {omega} cm for doped thin films. The doped films, Sb{sub 2}S{sub 3}:C, retained the orthogonal stibnite structure and the optical band gap energy in comparison with that of undoped Sb{sub 2}S{sub 3} thin films. By varying the carbon content (wt%) the electrical resistivity of Sb{sub 2}S{sub 3} can be controlled in order to make it suitable for various opto-electronic applications. (author)

  1. Study on superprism effect in the multilayer optical thin film stack

    Institute of Scientific and Technical Information of China (English)

    SUN Xue-zheng; GU Pei-fu; CHEN Hai-xing; JIN Bo; LI Hai-feng; LIU Xu

    2005-01-01

    Researches show that multilayer optical thin film stack can exhibit superprism effect due to their large abnormal dispersions. We investigated and simulated this effect numerically in a 1-D non-periodic film structure-Fabry-Perot filters (FPF), which possess drastic change in phase and large group delay around wavelength of peak transmittance, and fabricated this device to realize remarkable superprism effect. We tested experimentally with the maximum spatial separation shift up to 65 μm, and the experimental result is in good agreement with the theory. Compared with the traditional prism, the total thickness of our structure is only 3.3 μm, and our prism shows a stronger angular resolution of 1.8°/nm.

  2. Structural and optical analysis of 60Co gamma-irradiated thin films of polycrystalline Ga10Se85Sn5

    Science.gov (United States)

    Ahmad, Shabir; Asokan, K.; Shahid Khan, Mohd.; Zulfequar, M.

    2015-12-01

    The present study focuses on the effects of gamma irradiation on structural and optical properties of polycrystalline Ga10Se85Sn5 thin films with a thickness of ∼300 nm deposited by the thermal evaporation technique on cleaned glass substrates. X-ray diffraction patterns of the investigated thin films show that crystallite growth occurs in the orthorhombic phase structure. The surface study carried out by using the scanning electron microscope (SEM) confirms that the grain size increases with gamma irradiation. The optical parameters were estimated from optical transmission spectra data measured from a UV-vis-spectrophotometer in the wavelength range of 200-1100 nm. The refractive index dispersion data of the investigated thin films follow the single oscillator model. The estimated values of static refractive index n0, oscillator strength Ed, zero frequency dielectric constant ε0, optical conductivity σoptical and the dissipation factor increases after irradiation, while the single oscillator energy Eo decreases after irradiation. It was found that the value of the optical band gap of the investigated thin films decreases and the corresponding absorption coefficient increases continuously with an increase in the dose of gamma irradiation. This post irradiation changes in the values of optical band gap and absorption coefficient were interpreted in terms of the bond distribution model.

  3. Structural and Optical Properties of Sputtered Cadmium Telluride Thin Films Deposited on Flexible Substrates for Photovoltaic Applications.

    Science.gov (United States)

    Song, Woochang; Lee, Kiwon; Kim, Donguk; Lee, Jaehyeong

    2016-05-01

    Cadmium telluride (CdTe) is a photovoltaic technology based on the use of thin films of CdTe to absorb and convert sunlight into electricity. In this paper, polycrystalline CdTe thin films were deposited using radio frequency magnetron sputtering onto flexible substrates including polyimide and molybdenum foil. The structural and optical properties of the films grown at various sputtering pressures were investigated using X-ray diffraction (XRD), field-emission scanning electron microscope (FE-SEM), and UV/Nis/NIR spectrophotometry. The sputtering pressure was found to have significant effects on the structural properties, including crystallinity, preferential orientation, and microstructure. Deterioration of the optical properties of CdTe thin films were observed at high sputtering pressure.

  4. Low-temperature preparation of rutile-type TiO2 thin films for optical coatings by aluminum doping

    Science.gov (United States)

    Ishii, Akihiro; Kobayashi, Kosei; Oikawa, Itaru; Kamegawa, Atsunori; Imura, Masaaki; Kanai, Toshimasa; Takamura, Hitoshi

    2017-08-01

    A rutile-type TiO2 thin film with a high refractive index (n), a low extinction coefficient (k) and small surface roughness (Ra) is required for use in a variety of optical coatings to improve the controllability of the reflection spectrum. In this study, Al-doped TiO2 thin films were prepared by pulsed laser deposition, and the effects of Al doping on their phases, optical properties, surface roughness and nanoscale microstructure, including Al distribution, were investigated. By doping 5 and 10 mol%Al, rutile-type TiO2 was successfully prepared under a PO2 of 0.5 Pa at 350-600 °C. The nanoscale phase separation in the Al-doped TiO2 thin films plays an important role in the formation of the rutile phase. The 10 mol%Al-doped rutile-type TiO2 thin film deposited at 350 °C showed excellent optical properties of n ≈ 3.05, k ≈ 0.01 (at λ = 400 nm) and negligible surface roughness, at Ra ≈ 0.8 nm. The advantages of the superior optical properties and small surface roughness of the 10 mol%Al-doped TiO2 thin film were confirmed by fabricating a ten-layered dielectric mirror.

  5. Ultrafast carrier dynamics and third order nonlinear optical properties of aluminum doped zinc oxide (AZO) thin films

    Science.gov (United States)

    Htwe, Zin Maung; Zhang, Yun-Dong; Yao, Cheng-Bao; Li, Hui; Yuan, Ping

    2017-04-01

    Aluminum doped zinc oxide (AZO) thin films were fabricated by simultaneous RF/DC magnetron sputtering technique on sapphire (Al2O3) substrate with different DC sputtering power 2, 6, 8 and 10 W respectively. The sputtered thin films were annealed at 350 °C in order to improve the crystal quality. AZO thin films are systematically analyzed using X-ray diffraction (XRD), scanning electron microscopy (SEM) and UV-VIS spectrometer for structural and optical properties. XRD patterns show that all sputtered thin films are well crystallized with hexagonal wurtzite structure. SEM images reveal the average crystallite sizes are increased after doping Al in ZnO which agreed with the calculated values from XRD. All thin films possess high optical transmittance in visible region and optical band gap values are relatively increased with Al concentration. The ultrafast transient absorption (TA) of AZO was analyzed by femtosecond pump-probe spectroscopy. The kinetic TA curves were fitted by tri-exponential decay function and obtained decay time constants are found to be in few picosecond and nanosecond range for ultrafast and slow processes respectively. Third order nonlinear optical absorption and refraction coefficients were investigated by using Z-scan technique. The observed nonlinear coefficients are enhanced with Al concentration in ZnO.

  6. Synthesis, microstructural characterization and optical properties of undoped, V and Sc doped ZnO thin films

    Energy Technology Data Exchange (ETDEWEB)

    Amezaga-Madrid, P.; Antunez-Flores, W.; Ledezma-Sillas, J.E.; Murillo-Ramirez, J.G.; Solis-Canto, O.; Vega-Becerra, O.E.; Martinez-Sanchez, R. [Centro de Investigacion en Materiales Avanzados S.C. and Laboratorio Nacional de Nanotecnologia, Miguel de Cervantes 120, Chihuahua, Chih., C.P. 31109 (Mexico); Miki-Yoshida, M., E-mail: mario.miki@cimav.edu.mx [Centro de Investigacion en Materiales Avanzados S.C. and Laboratorio Nacional de Nanotecnologia, Miguel de Cervantes 120, Chihuahua, Chih., C.P. 31109 (Mexico)

    2011-06-15

    Research highlights: > Undoped, V and Sc doped ZnO thin films by Aerosol Assisted Chemical Vapour Deposition. > Optimum substrate temperatures of 673 K and 623 K for Sc and V doped films. > Around one third of the dopants in solution were deposited into the films. > Crystallite and grain size decreased with the increase of dopant concentration. > Optical band gap increased from 3.29 to 3.32 eV for undoped to 7 Sc/Zn at. %. - Abstract: Many semiconductor oxides (ZnO, TiO{sub 2}, SnO{sub 2}) when doped with a low percentage of non-magnetic (V, Sc) or magnetic 3d (Co, Mn, Ni, Fe) cation behave ferromagnetically. They have attracted a great deal of interest due to the integration of semiconducting and magnetic properties in a material. ZnO is one of the most promising materials to carry out these tasks in view of the fact that it is optically transparent and has n or p type conductivity. Here, we report the synthesis, microstructural characterization and optical properties of undoped, V and Sc doped zinc oxide thin films. ZnO based thin films with additions of V and Sc were deposited by the Aerosol Assisted Chemical Vapour Deposition method. V and Sc were incorporated separately in the precursor solution. The films were uniform, transparent and non-light scattering. The microstructure of the films was characterized by Grazing Incidence X-ray Diffraction, Scanning Electron Microscopy, and Scanning Probe Microscopy. Average grain size and surface rms roughness were estimated by the measurement of Atomic Force Microscopy. The microstructure of doped ZnO thin films depended on the type and amount of dopant material incorporated. The optical properties were determined from specular reflectance and transmittance spectra. Results were analyzed to determine the optical constant and band gap of the films. An increase in the optical band gap with the content of Sc dopant was obtained.

  7. Glow discharge optical emission spectroscopy for accurate and well resolved analysis of coatings and thin films

    KAUST Repository

    Wilke, Marcus

    2011-12-01

    In the last years, glow discharge optical emission spectrometry (GDOES) gained more and more acceptance in the analysis of functional coatings. GDOES thereby represents an interesting alternative to common depth profiling techniques like AES and SIMS, based on its unique combination of high erosion rates and erosion depths, sensitivity, analysis of nonconductive layers and easy quantification even for light elements such as C, N, O and H. Starting with the fundamentals of GDOES, a short overview on new developments in instrument design for accurate and well resolved thin film analyses is presented. The article focuses on the analytical capabilities of glow discharge optical emission spectrometry in the analysis of metallic coatings and thin films. Results illustrating the high depth resolution, confirmation of stoichiometry, the detection of light elements in coatings as well as contamination on the surface or interfaces will be demonstrated by measurements of: a multilayer system Cr/Ti on silicon, interface contamination on silicon during deposition of aluminum, Al2O3-nanoparticle containing conversion coatings on zinc for corrosion resistance, Ti3SiC2 MAX-phase coatings by pulsed laser deposition and hydrogen detection in a V/Fe multilayer system. The selected examples illustrate that GDOES can be successfully adopted as an analytical tool in the development of new materials and coatings. A discussion of the results as well as of the limitations of GDOES is presented. © 2011 Elsevier B.V.

  8. Influence of Doping Concentration on Dielectric, Optical, and Morphological Properties of PMMA Thin Films

    Directory of Open Access Journals (Sweden)

    Lyly Nyl Ismail

    2012-01-01

    Full Text Available PMMA thin films were deposited by sol gel spin coating method on ITO substrates. Toluene was used as the solvent to dissolve the PMMA powder. The PMMA concentration was varied from 30 ~ 120 mg. The dielectric properties were measured at frequency of 0 ~ 100 kHz. The dielectric permittivity was in the range of 7.3 to 7.5 which decreased as the PMMA concentration increased. The dielectric loss is in the range of 0.01 ~ –0.01. All samples show dielectric characteristics which have dielectric loss is less than 0.05. The optical properties for thin films were measured at room temperature across 200 ~ 1000 nm wavelength region. All samples are highly transparent. The energy band gaps are in the range of 3.6 eV to 3.9 eV when the PMMA concentration increased. The morphologies of the samples show that all samples are uniform and the surface roughness increased as the concentration increased. From this study, it is known that, the dielectric, optical, and morphology properties were influenced by the amount of PMMA concentration in the solution.

  9. Study of Optical and Electrical Properties of Organic Thin Films for Photovoltaic Applications

    Directory of Open Access Journals (Sweden)

    Jan Pospisil

    2015-09-01

    Full Text Available The paper deals with the study of optical, electrical and dielectric properties of thin film organic materials suitable for the preparation of optoelectronic devices (e.g. photodiodes, phototransistors, photovoltaic cells. As active layers palladium phthalocyanine (PdPc[t-Bu]4, fullerene (acceptor material, PCBM and their mixture (9:5 mass % were used. Thin films were prepared by two methods: by spin coating (Chemat technology Spin Coater and by material inkjet printing (Dimatix Materials Printer DMP-2800. UV-VIS spectroscopy and ellipsometry were used to study the optical properties. The paper also presents results of electrical and dielectric measurements. We found out that the properties of all structures prepared by spin coating depend on the rotational speed of spin coater, on the mode of solution casting (static, dynamic and in the case of material inkjet printing they are too much influenced by the substrate. Samples prepared on the substrate at 60 °C showed a photovoltaic effect with fill factor about 0.25 and the conversion efficiency about 0.2 %.DOI: http://dx.doi.org/10.5755/j01.ms.21.3.7278

  10. Study of Optical and Electrical Properties of Organic Thin Films for Photovoltaic Applications

    Directory of Open Access Journals (Sweden)

    Jan Pospisil

    2015-09-01

    Full Text Available The paper deals with the study of optical, electrical and dielectric properties of thin film organic materials suitable for the preparation of optoelectronic devices (e.g. photodiodes, phototransistors, photovoltaic cells. As active layers palladium phthalocyanine (PdPc[t-Bu]4, fullerene (acceptor material, PCBM and their mixture (9:5 mass % were used. Thin films were prepared by two methods: by spin coating (Chemat technology Spin Coater and by material inkjet printing (Dimatix Materials Printer DMP-2800. UV-VIS spectroscopy and ellipsometry were used to study the optical properties. The paper also presents results of electrical and dielectric measurements. We found out that the properties of all structures prepared by spin coating depend on the rotational speed of spin coater, on the mode of solution casting (static, dynamic and in the case of material inkjet printing they are too much influenced by the substrate. Samples prepared on the substrate at 60 °C showed a photovoltaic effect with fill factor about 0.25 and the conversion efficiency about 0.2 %.DOI: http://dx.doi.org/10.5755/j01.ms.21.3.7278

  11. Structural and optical properties of ZnSe thin films stacked with PbSe submonolayers

    Science.gov (United States)

    Manonmani Parvathi, M.; Arivazhagan, V.; Rajesh, S.

    2014-09-01

    Structural and optical properties of Zinc Selenide (ZnSe) thin films stacked with multiple Lead Selenide (PbSe) submonolayers (ML) were studied. Thermal evaporation was preferred to produce ZnSe-PbSe thin films with the PbSe ML thickness ranges from 2.5 to 10 nm. Polycrystalline nature of the ZnSe was revealed through high resolution X-ray diffractometer measurement. The development of micro strain at the interfaces with increasing PbSe ML thickness was observed. A cross-sectional TEM image shows well-ordered periodicity and reproducibility of the layer thickness. The enhancement of optical absorption of ZnSe was identified upon stacking of PbSe ML. The evidence for quantum confinement in PbSe ML was revealed by the obtained red shift in band gap (2.5-1.8 eV) values as well as photoluminescence emission at 1,071 nm. The presence of tensile strain in the ZnSe layers upon staking of PbSe ML was discussed by the shift in LO phonon modes in Raman spectra.

  12. Influence of Deposition Parameters on the Morphology, Structural, and Optical Properties of ZnSe Nanocrystalline Thin Films

    Science.gov (United States)

    Wei, Aixiang; Zhao, Xianghui; Zhao, Yu; Liu, Jun

    2013-04-01

    Zinc selenide (ZnSe) nanocrystalline thin films were prepared by using chemical bath deposition at different ammonia concentrations and different deposition temperatures. The structural and optical properties of ZnSe nanocrystalline thin films were investigated as a function of the ammonia concentration in precursors or the deposition temperature using scanning electron microscopy, energy-dispersive spectrometry, x-ray diffraction measurements, and ultraviolet (UV)-visible spectrophotometry measurements. The results reveal that the ZnSe thin films are composed of a large number of uniform spherical particles. Each spherical particle contains several nanocrystals 5 nm to 7 nm in crystallite size. An increase in both the average diameter of the spherical particles and the crystallite size of the nanocrystals occurs with an increase in ammonia concentration and/or deposition temperature. The Se/Zn atom ratios in the ZnSe thin films increase and the optical band gaps, E g, of the ZnSe thin films decrease with an increase in ammonia concentration or deposition temperature. The kinetics and reaction mechanism of the ZnSe nanocrystalline thin films during deposition are discussed.

  13. Chiral atomically thin films

    Science.gov (United States)

    Kim, Cheol-Joo; Sánchez-Castillo, A.; Ziegler, Zack; Ogawa, Yui; Noguez, Cecilia; Park, Jiwoong

    2016-06-01

    Chiral materials possess left- and right-handed counterparts linked by mirror symmetry. These materials are useful for advanced applications in polarization optics, stereochemistry and spintronics. In particular, the realization of spatially uniform chiral films with atomic-scale control of their handedness could provide a powerful means for developing nanodevices with novel chiral properties. However, previous approaches based on natural or grown films, or arrays of fabricated building blocks, could not offer a direct means to program intrinsic chiral properties of the film on the atomic scale. Here, we report a chiral stacking approach, where two-dimensional materials are positioned layer-by-layer with precise control of the interlayer rotation (θ) and polarity, resulting in tunable chiral properties of the final stack. Using this method, we produce left- and right-handed bilayer graphene, that is, a two-atom-thick chiral film. The film displays one of the highest intrinsic ellipticity values (6.5 deg μm-1) ever reported, and a remarkably strong circular dichroism (CD) with the peak energy and sign tuned by θ and polarity. We show that these chiral properties originate from the large in-plane magnetic moment associated with the interlayer optical transition. Furthermore, we show that we can program the chiral properties of atomically thin films layer-by-layer by producing three-layer graphene films with structurally controlled CD spectra.

  14. Structural and Optical Studies of Magnesium Doped Zinc Oxide Thin Films

    Directory of Open Access Journals (Sweden)

    Arpana Agrawal

    2013-05-01

    Full Text Available The paper describes the structural and optical properties of Magnesium doped Zinc Oxide (Mg  3.5 %, 6 %, 9 %, 12 % by weight thin films prepared by pulsed laser deposition technique. The samples are characterized by X-ray diffraction technique, Ultra-violet visible absorption spectroscopy, X-ray photoelectron spectroscopy. X-ray diffraction results reveal the polycrystalline nature of samples with no impurity or secondary phase formation. Ultra-violet visible absorption spectroscopy studies show the blue shift in the optical band gap subsequent to Mg doping. X-ray photoelectron spectroscopy results reveal the replacement of Zn2+ cation by Mg2+ ion.

  15. Modeling chiral sculptured thin films as platforms for surface-plasmonic-polaritonic optical sensing

    CERN Document Server

    Mackay, Tom G

    2010-01-01

    Biomimetic nanoengineered metamaterials called chiral sculptured thin films (CSTFs) are attractive platforms for optical sensing because their porosity, morphology and optical properties can be tailored to order. Furthermore, their ability to support more than one surface-plasmon-polariton (SPP) wave at a planar interface with a metal offers functionality beyond that associated with conventional SPP--based sensors. An empirical model was constructed to describe SPP-wave propagation guided by the planar interface of a CSTF--infiltrated with a fluid which supposedly contains analytes to be detected--and a metal. The inverse Bruggeman homogenization formalism was first used to determine the nanoscale model parameters of the CSTF. These parameters then served as inputs to the forward Bruggeman homogenization formalism to determine the reference relative permittivity dyadic of the infiltrated CSTF. By solving the coresponding boundary-value problem for a modified Kretschmann configuration, the characteristics of t...

  16. Dynamic scaling and optical properties of Zn(S, O,OH) thin film grown by chemical bath deposition

    Institute of Scientific and Technical Information of China (English)

    Zhang Yi; Li Bo-Yan; Dang Xiang-Yu; Wu Li; Jin Jing; Li Feng-Yan; Ao Jian-Ping; Sun Yun

    2011-01-01

    The scaling behavior and optical properties of Zn(S,O and OH) thin films deposited on soda-lime glass substrates by chemical bath deposition method were studied by combined roughness measurements,scanning electron microscopy and optical properties measurement.From the scaling behaviour,the value of growth scaling exponent β,0.38±0.06,was determined.This value indicated that the Zn(S,O,OH) film growth in the heterogeneous process was influenced by the surface diffusion and shadowing effect.Results of the optical properties measurements disclosed that the transmittance of the film was in the region of 70%-88% and the optical properties of the film grown for 40 min were better than those grown under other conditions.The energy band gap of the film deposited with 40 min was around 3.63 eV.

  17. Influence of air annealing on the structural, morphological, optical and electrical properties of chemically deposited ZnSe thin films

    Science.gov (United States)

    Kale, R. B.; Lokhande, C. D.

    2005-11-01

    Zinc selenide nanocrystalline thin films are grown onto amorphous glass substrate from an aqueous alkaline medium, using chemical bath deposition (CBD) method. The ZnSe thin films are annealed in air for 4 h at various temperatures and characterized by structural, morphological, optical and electrical properties. The as-deposited ZnSe film grew with nanocrystalline cubic phase alongwith some amorphous phase present in it. After annealing metastable nanocrystalline cubic phase was transformed into stable polycrystalline hexagonal phase with partial conversion of ZnSe into ZnO. The optical band gap, Eg, of as-deposited film is 2.85 eV and electrical resistivity of the order of 10 6-10 7 Ω cm. Depending upon annealing temperature, decrease up to 0.15 eV and 10 2 Ω cm were observed in the optical band gap, Eg, and electrical resistivity, respectively.

  18. Optical and Morphological Studies of Thermally Evaporated PTCDI-C8 Thin Films for Organic Solar Cell Applications

    Directory of Open Access Journals (Sweden)

    Ronak Rahimi

    2013-01-01

    Full Text Available PTCDI-C8 due to its relatively high photosensitivity and high electron mobility has attracted much attention in organic semiconductor devices. In this work, thin films of PTCDI-C8 with different thicknesses were deposited on silicon substrates with native silicon dioxide using a vacuum thermal evaporator. Several material characterization techniques have been utilized to evaluate the structure, morphology, and optical properties of these films. Their optical constants (refractive index and extinction coefficient have been extracted from the spectroscopic ellipsometry (SE. X-ray reflectivity (XRR and atomic force microscopy (AFM were employed to determine the morphology and structure as well as the thickness and roughness of the PTCDI-C8 thin films. These films revealed a high degree of structural ordering within the layers. All the experimental measurements were performed under ambient conditions. PTCDI-C8 films have shown to endure ambient condition which allows pots-deposition characterization.

  19. OPTIMUM STOICHIOMETRY OF CADMIUM ZINC TELLURIDE THIN FILMS IN THE LIGHT OF OPTICAL, STRUCTURAL AND PHOTON GENERATED GAIN STUDIES

    Directory of Open Access Journals (Sweden)

    Dr. MONISHA CHAKRABORTY

    2011-05-01

    Full Text Available Cadmium Zinc Telluride (Cd1-xZnxTe is a potential material for high energy imaging devices. Proper methods are adopted in this work to fabricate large area device grade Cd1-xZnxTe thin films for ‘x’ varying from 0.0567 to 0.2210. Large work function Nickel (Ni is the contact points on these films. The fabricated films are subjected to optical characterization, structural characterization and photon generated gain studies. Properties of fabricated films are found to vary with ‘x’. Photon generated gains of Ni-Cd1-xZnxTe structures are obtained. The present paper dealt with the estimation of optimum ‘x’ in Cd1-xZnxTe thin films in the light of optical, structural and photon generated gain studies.

  20. Investigations of Different Phases Responsible for Changes in Optical Properties of Organic Semiconducting Device Material Thin Films

    Directory of Open Access Journals (Sweden)

    Vivek Kumar Shukla

    2013-01-01

    Full Text Available The environment sensitivity of organic semiconductors may change their molecular structure and hence optical properties. Exploiting this concept, experiments were performed on a green light emitting material bis(8-hydroxy quinolineZinc, (Znq2 used in organic light emitting diodes (OLEDs. Thin films were deposited at varying deposition parameters, and their properties were compared. We investigated that as deposited films have a significant component of Znq2 tetramer out of two known forms, that is, dihydrate and anhydrous tetramer (Znq24, the films deposited at lower deposition rates have higher anhydrous content. The degradation of thin film is shown, that changes the optical properties of film from green emission to blue which may be due to water adsorption and crystallization.

  1. Large third-order optical nonlinearities in iron oxide thin films synthesized by reactive pulsed laser deposition

    Science.gov (United States)

    Mulenko, S. A.; Rudenko, V. I.; Liakhovetskyi, V. R.; Brodin, A. M.; Stefan, N.

    2016-10-01

    We report on a study of the third-order nonlinear optical properties of Fe2O3 thin films, grown by the method of laser deposition on silica (SiO2) substrates. The films were synthesized on substrates at different temperatures (293 K and 800 K) and under different oxygen pressures (0.1 Pa, 0.5 Pa, 1.0 Pa). The resulting films were amorphous, if grown on cold substrates (293 K), or polycrystalline otherwise. The third-order optical susceptibility χ(3) of the films was determined by the Z-scan method at the wavelengths of 1064 nm and 532 nm and the laser pulse width of 20 ns. Remarkably high χ(3) values on the order of 10-4 esu at 1064 nm are obtained. The results show that Fe2O3 thin films are promising nonlinear materials for contemporary optoelectronics.

  2. Growth direction of oblique angle electron beam deposited silicon monoxide thin films identified by optical second-harmonic generation

    Energy Technology Data Exchange (ETDEWEB)

    Vejling Andersen, Søren; Lund Trolle, Mads; Pedersen, Kjeld [Department of Physics and Nanotechnology, Aalborg University, Skjernvej 4A, DK-9220 Aalborg Øst (Denmark)

    2013-12-02

    Oblique angle deposited (OAD) silicon monoxide (SiO) thin films forming tilted columnar structures have been characterized by second-harmonic generation. It was found that OAD SiO leads to a rotationally anisotropic second-harmonic response, depending on the optical angle of incidence. A model for the observed dependence of the second-harmonic signal on optical angle of incidence allows extraction of the growth direction of OAD films. The optically determined growth directions show convincing agreement with cross-sectional scanning electron microscopy images. In addition to a powerful characterization tool, these results demonstrate the possibilities for designing nonlinear optical devices through SiO OAD.

  3. Thin-film optical notch filter spectacle coatings for the treatment of migraine and photophobia

    Science.gov (United States)

    Hoggan, Ryan N.; Subhash, Amith; Blair, Steve; Digre, Kathleen B.; Baggaley, Susan K.; Gordon, Jamison; Brennan, K.C.; Warner, Judith E.A.; Crum, Alison V.; Katz, Bradley J.

    2017-01-01

    Previous evidence suggests optical treatments hold promise for treating migraine and photophobia. We designed an optical notch filter, centered at 480 nm to reduce direct stimulation of intrinsically photosensitive retinal ganglion cells. We used thin-film technology to integrate the filter into spectacle lenses. Our objective was to determine if an optical notch filter, designed to attenuate activity of intrinsically photosensitive retinal ganglion cells, could reduce headache impact in chronic migraine subjects. For this randomized, double-masked study, our primary endpoint was the Headache Impact Test (HIT-6; GlaxoSmithKline, Brentford, Middlesex, UK). We developed two filters: the therapeutic filter blocked visible light at 480 nm; a 620 nm filter was designed as a sham. Participants were asked to wear lenses with one of the filters for 2 weeks; after 2 weeks when no lenses were worn, they wore lenses with the other filter for 2 weeks. Of 48 subjects, 37 completed the study. Wearing either the 480 or 620 nm lenses resulted in clinically and statistically significant HIT-6 reductions. However, there was no significant difference when comparing overall effect of the 480 and 620 nm lenses. Although the 620 nm filter was designed as a sham intervention, research published following the trial indicated that melanopsin, the photopigment in intrinsically photosensitive retinal ganglion cells, is bi-stable. This molecular property may explain the unexpected efficacy of the 620 nm filter. These preliminary findings indicate that lenses outfitted with a thin-film optical notch filter may be useful in treating chronic migraine. PMID:26935748

  4. Determination of the Optical GAP in Thin Films of Amorphous Dilithium Phthalocyanine Using the Tauc and Cody Models

    Directory of Open Access Journals (Sweden)

    Jerry N. Reider-Burstin

    2012-08-01

    Full Text Available Semiconducting thin films were grown on quartz substrates and crystalline silicon wafers, using dilithium phthalocyanine and the organic ligands 2,6-dihydroxyanthraquinone and 2,6-diaminoanthraquinone as the starting compounds. The films, thus obtained, were characterized by Fourier Transform infrared (FTIR, fast atomic bombardment (FAB+ mass and ultraviolet-visible (UV-Vis spectroscopies. The surface morphology of these films was analyzed by means of atomic force microscopy (AFM and scanning electron microscopy (SEM. It was found that the temperature-dependent electric current in all cases showed a semiconductor behavior with conductivities on the order of 10−6·S cm−1, whereas the highest value corresponded to the thin film based upon the bidentate amine. The Tauc and Cody optical band gap values of thin films were calculated from the absorption coefficients and were found to be around 1.5 eV, with another strong band between 2.3 and 2.43 eV, arising from non-direct transitions. The curvature in the Tauc plot influencing the determination of the optical gap, the Tauc optical gap corresponding to the thicker film is smaller. The dependence of the Cody optical gap on the film thickness was negligible.

  5. Structural and Optical Properties of Group III Doped Hydrothermal ZnO Thin Films

    Science.gov (United States)

    Mughal, Asad J.; Carberry, Benjamin; Speck, James S.; Nakamura, Shuji; DenBaars, Steven P.

    2017-03-01

    In this work, we employ a simple two-step growth technique to deposit impurity doped heteroepitaxial thin films of (0001) ZnO onto (111) MgAl2O4 spinel substrates through a combination of atomic layer deposition (ALD) and hydrothermal growth. The hydrothermal layer is doped with Al, Ga, and In through the addition of their respective nitrate salts. We evaluated the effect that varying the concentrations of these dopants has on both the structural and optical properties of these films. It was found that the epitaxial ALD layer created a ZnO}} } . out-of-plane orientation and a ZnO}} } . in-plane orientation between the film and substrate. The rocking curve line widths ranged between 0.75° and 1.80° depending on dopant concentration. The optical bandgap determined through the Tauc method was between 3.28 eV and 3.39 eV and showed a Burstein-Moss shift with increasing dopant concentration.

  6. Structural and Optical Properties of Group III Doped Hydrothermal ZnO Thin Films

    Science.gov (United States)

    Mughal, Asad J.; Carberry, Benjamin; Speck, James S.; Nakamura, Shuji; DenBaars, Steven P.

    2017-01-01

    In this work, we employ a simple two-step growth technique to deposit impurity doped heteroepitaxial thin films of (0001) ZnO onto (111) MgAl2O4 spinel substrates through a combination of atomic layer deposition (ALD) and hydrothermal growth. The hydrothermal layer is doped with Al, Ga, and In through the addition of their respective nitrate salts. We evaluated the effect that varying the concentrations of these dopants has on both the structural and optical properties of these films. It was found that the epitaxial ALD layer created a ZnO}} } out-of-plane orientation and a ZnO}} } in-plane orientation between the film and substrate. The rocking curve line widths ranged between 0.75° and 1.80° depending on dopant concentration. The optical bandgap determined through the Tauc method was between 3.28 eV and 3.39 eV and showed a Burstein-Moss shift with increasing dopant concentration.

  7. Structural and Optical Properties of Group III Doped Hydrothermal ZnO Thin Films

    KAUST Repository

    Mughal, Asad J.

    2017-01-11

    In this work, we employ a simple two-step growth technique to deposit impurity doped heteroepitaxial thin films of (0001) ZnO onto (111) MgAl2O4 spinel substrates through a combination of atomic layer deposition (ALD) and hydrothermal growth. The hydrothermal layer is doped with Al, Ga, and In through the addition of their respective nitrate salts. We evaluated the effect that varying the concentrations of these dopants has on both the structural and optical properties of these films. It was found that the epitaxial ALD layer created a ⟨111⟩MgAl2O4∥⟨0001⟩ZnO out-of-plane orientation and a ⟨1¯1¯2⟩MgAl2O4∥∥⟨011¯0⟩ZnO in-plane orientation between the film and substrate. The rocking curve line widths ranged between 0.75° and 1.80° depending on dopant concentration. The optical bandgap determined through the Tauc method was between 3.28 eV and 3.39 eV and showed a Burstein-Moss shift with increasing dopant concentration.

  8. Structural and optical characterization of 1 µm of ternary alloy ZnCuSe thin films

    Science.gov (United States)

    Shaaban, E. R.; Hassan, H. Shokry; Aly, S. A.; Elshaikh, H. A.; Mahasen, M. M.

    2016-08-01

    Different compositions of Cu-doped ZnSe in ternary alloy Zn1- x Cu x Se thin films (with x = 0, 0.025, 0.05, 0.075 and 0.10) were evaporated (thickness 1 µm) onto glass substrate using electron beam evaporation method. The X-ray diffraction analysis for both powder and films indicated their polycrystalline nature with zinc blende (cubic) structure. The crystallite size was found to increase, while the lattice microstrain was decreased with increasing Cu dopant. The optical characterization of films was carried out using the transmittance spectra, where the refractive indices have been evaluated in transparent and medium transmittance regions using the envelope method, suggested by Swanepoel. The refractive index has been found to increase with increasing Cu content. The dispersion of refractive index has been analyzed in terms of the Wemple-DiDomenico single-oscillator model. The oscillator parameters, the single-oscillator energy E o, the dispersion energy E d and the static refractive index n 0, were estimated. The optical band gap was determined in strong absorption region of transmittance spectra and was found to increase from 2.702 to 2.821 eV with increasing the Cu content. This increase in the band gap was well explained by the Burstein-Moss effect.

  9. Optical properties of Au-dispersed ZrO2 thin films

    Science.gov (United States)

    Huang, Weimin; Arizpe-Chávez, Humberto; Ramírez-Bon, Rafael; Espinoza-Beltrán, Francisco

    2002-03-01

    The optical absorption of gold nanoparticles dispersed within mesoporous zirconia thin films has been investigated. The samples of this material were prepared by the sol-gel technique. TEM studies showed Au nanoparticles with sizes in the range from 5 to 20 nm, embedded into the zirconia matrix. Also, XR diffraction spectra showed Au diffraction peaks corresponding to metallic nanoparticles with sizes in the range 7-9 nm. The accepted surface plasma resonance value for gold is 556 nm. The absorption spectra showed a red shift on the SPR position for samples thermally annealed. Also, a red shift is observed for samples treated with monoethanolamine (MEA) vapor. A lowering in the intensities of the absorption peaks for the treated samples is observed. On the other hand, larger gold dopping produces a blue shift in the absorption spectra, with an increment in the intensity of the absorption peaks. The Tauc-Lorentz fitting model allowed us to measure changes in the dielectric function of the material. Therefore, we conclude that not only the particle size drives the optical absorption spectra in gold-doped films. The observed opposite results can be explained if we introduce changes in the dielectric constant of the films.

  10. Structure and Optical Properties of Silicon Nanocrystals Embedded in Amorphous Silicon Thin Films Obtained by PECVD

    Directory of Open Access Journals (Sweden)

    B. M. Monroy

    2011-01-01

    Full Text Available Silicon nanocrystals embedded in amorphous silicon matrix were obtained by plasma enhanced chemical vapor deposition using dichlorosilane as silicon precursor. The RF power and dichlorosilane to hydrogen flow rate ratio were varied to obtain different crystalline fractions and average sizes of silicon nanocrystals. High-resolution transmission electron microscopy images and RAMAN measurements confirmed the existence of nanocrystals embedded in the amorphous matrix with average sizes between 2 and 6 nm. Different crystalline fractions (from 12% to 54% can be achieved in these films by regulating the selected growth parameters. The global optical constants of the films were obtained by UV-visible transmittance measurements. Effective band gap variations from 1.78 to 2.3 eV were confirmed by Tauc plot method. Absorption coefficients higher than standard amorphous silicon were obtained in these thin films for specific growth parameters. The relationship between the optical properties is discussed in terms of the different internal nanostructures of the samples.

  11. Thin films of arylenevinylene oligomers prepared by MAPLE for applications in non-linear optics

    Energy Technology Data Exchange (ETDEWEB)

    Stanculescu, A., E-mail: sanca@infim.ro [National Institute of Materials Physics, Optics and Spectroscopy Laboratory, 105 bis Atomistilor Street, P.O. Box MG-7, Bucharest-Magurele 077125 (Romania); Vacareanu, L.; Grigoras, M. [P. Poni' Institute of Macromolecular Chemistry, 41 A Gr. Ghica Voda Alley, 700487 Iasi (Romania); Socol, M. [National Institute of Materials Physics, Optics and Spectroscopy Laboratory, 105 bis Atomistilor Street, P.O. Box MG-7, Bucharest-Magurele 077125 (Romania); Socol, G. [National Institute for Laser, Plasma and Radiation Physics, Str. Atomistilor, Nr. 409, P.O. Box MG-36, Magurele, Bucharest 077125 (Romania); Stanculescu, F. [Faculty of Physics, University of Bucharest, Str. Atomistilor nr.405, P.O. Box MG-11, Bucharest-Magurele 077125 (Romania); Preda, N.; Matei, E. [National Institute of Materials Physics, Optics and Spectroscopy Laboratory, 105 bis Atomistilor Street, P.O. Box MG-7, Bucharest-Magurele 077125 (Romania); Ionita, I. [Faculty of Physics, University of Bucharest, Str. Atomistilor nr.405, P.O. Box MG-11, Bucharest-Magurele 077125 (Romania); Girtan, M. [Laboratoire de Photonique d' Angers, Universite d' Angers, 2, Bd. Lavoisier, 49045 Angers (France); Mihailescu, I.N. [National Institute for Laser, Plasma and Radiation Physics, Str. Atomistilor, Nr. 409, P.O. Box MG-36, Magurele, Bucharest 077125 (Romania)

    2011-04-01

    This paper discusses two arylenevinylene oligomers with optical nonlinear properties. Their trans molecular structure was confirmed by Fourier Transform Infrared Spectroscopy and Nuclear Magnetic Resonance. Second Harmonic Generation and two-photon fluorescence have been observed on Matrix Assisted Pulsed Laser Evaporation-deposited thin films. We have seen two local maxima in UV-Vis spectra and a red shift of the photoluminescence peak for carbazole-based oligomer, which can be correlated with a higher conformational flexibility and with strong polarization interactions in the solid state. Scanning Electron Microscopy and Atomic Force Microscopy images have revealed a grainy morphology of the film deposited on titanium and a higher roughness for carbazole-based oligomer. Second harmonic measurements have shown nearly equal values of the second-order nonlinear optical coefficient for the triphenylamine and carbazole-based oligomers for P{sub laser} < 100 mW. z-Scan and x-scan representations of the carbazole-based oligomer film have shown strong two-photon fluorescence intensity inside the sample confirming a volume process, and a strong second harmonic at the surface of the sample determined by the surface morphology.

  12. Effects of oxygen partial pressure and annealing on dispersive optical nonlinearity in NiO thin films

    Science.gov (United States)

    Chouhan, Romita; Baraskar, Priyanka; Agrawal, Arpana; Gupta, Mukul; Sen, Pranay K.; Sen, Pratima

    2017-07-01

    We report annealing induced sign reversal of dispersive optical nonlinearity in ion beam sputtered NiO thin films deposited at 30% and 70% oxygen partial pressures. In the Ultraviolet-visible spectra of the samples, the transmission peak corresponding to d-d transitions is observed near 2 eV. A shift in this peak towards higher energy was observed when the same films were annealed at 523 K. The near resonant photoinduced transitions produced giant nonlinear optical susceptibilities of both third- and fifth- orders when the annealed film was irradiated by a continuous wave 632.8 nm He-Ne laser. The role of the thermo-optic effect has been examined critically. Experimental studies further reveal that the oxygen partial pressure influences the growth direction of the grains in the thin films. The well known Z-scan experimental procedure has been followed for measurements of optical nonlinearities in all the NiO films. The nonlinear refractive indices of both the as-deposited and annealed NiO thin films are defined in terms of the thermo-optic coefficients (d/nd T ) T =T0 and (d/2nd T2 ) T =T0 .

  13. Optical parameters of Al-doped ZnO nanorod array thin films grown via the hydrothermal method.

    Science.gov (United States)

    Kim, Soaram; Kim, Min Su; Nam, Giwoong; Park, Hyunggil; Yoon, Hyunsik; Leem, Jae-Young

    2013-09-01

    ZnO seed layers were deposited onto a quartz substrate using the sol--gel method, and Al-doped ZnO (AZO) nanorod array thin films with different Al concentrations that ranged from 0 to 2.0 at. % were grown on the ZnO seed layers via the hydrothermal method. Optical parameters, including the optical band gap, the absorption coefficient, the Urbach energy, the refractive index, the dispersion parameter, and the optical conductivity, were studied to investigate the effects of Al doping on the optical properties of AZO nanorod array thin films. The optical band gaps of the ZnO and AZO nanorod array thin films were 3.206 at 0 at.%, 3.214 at 0.5 at.%, 3.226 at 1.5 at.%, and 3.268 at 2.0 at.%. The Urbach energy gradually decreased from 126 meV (0 at.%) to 70 meV (2.0 at.%) as the Al concentration was increased. The dispersion energy, the single-oscillator energy, the average oscillator wavelength, the average oscillator strength, the refractive index, and the optical conductivity of the AZO nanorod array thin films were all affected by Al doping.

  14. A study on linear and non-linear optical constants of Rhodamine B thin film deposited on FTO glass

    Energy Technology Data Exchange (ETDEWEB)

    Yahia, I.S. [Nano-Science & Semiconductor Labs, Physics Department, Faculty of Education, Ain Shams University, Roxy, Cairo (Egypt); Department of Physics, Faculty of Science, King Khalid University, P.O. Box 9004, Abha (Saudi Arabia); Jilani, Asim, E-mail: asim.jilane@gmail.com [Centre of Nanotechnology, Physics Department-Faculty of Science-AL Faisaliah Campus, King Abdulaziz University, P.O. Box 80200, Jeddah 21589 (Saudi Arabia); Abutalib, M.M. [Centre of Nanotechnology, Physics Department-Faculty of Science-AL Faisaliah Campus, King Abdulaziz University, P.O. Box 80200, Jeddah 21589 (Saudi Arabia); AlFaify, S. [Nano-Science & Semiconductor Labs, Physics Department, Faculty of Education, Ain Shams University, Roxy, Cairo (Egypt); Shkir, M. [Department of Physics, Faculty of Science, King Khalid University, P.O. Box 9004, Abha (Saudi Arabia); Abdel-wahab, M.Sh.; Al-Ghamdi, Attieh A. [Centre of Nanotechnology, Physics Department-Faculty of Science-AL Faisaliah Campus, King Abdulaziz University, P.O. Box 80200, Jeddah 21589 (Saudi Arabia); El-Naggar, A.M. [Exploitation of Renewable Energy Applications in Saudi Arabia, Physics & Astronomy Department, College of Science, King Saud University, P.O.Box 2455, Riyadh 11451 (Saudi Arabia)

    2016-06-01

    The aim of this research was to fabricate/deposit the good quality thin film of Rhodamine B dye on fluorine doped tin oxide glass substrate by the low cost spin coating technique and study their linear and nonlinear optical parameters. The thickness of the thin film was measured about 300 nm with alpha step system. The transmittance of the fabricated thin film was found to be above 75% corresponding to the fluorine doped tin oxide layer. The structural analysis was performed with X-rays diffraction spectroscopy. Atomic force microscope showed the topographic image of deposited thin film. Linear optical constant like absorption coefficient, band gap, and extinction index was calculated. The dielectric constant was calculated to know the optical response of Rhodamine B dye over fluorine doped tin oxide substrate. The nonlinear optical constant like linear optical susceptibility χ{sup (1)}, nonlinear optical susceptibility χ{sup (3)}, nonlinear refractive index (n{sub 2}) were calculated by spectroscopic method. This method has advantage over the experimental method like Z-Scan for organic dye base semiconductors for future advance optoelectronics applications like dye synthesis solar cell.

  15. A study on linear and non-linear optical constants of Rhodamine B thin film deposited on FTO glass

    Science.gov (United States)

    Yahia, I. S.; Jilani, Asim; Abutalib, M. M.; AlFaify, S.; Shkir, M.; Abdel-wahab, M. Sh.; Al-Ghamdi, Attieh A.; El-Naggar, A. M.

    2016-06-01

    The aim of this research was to fabricate/deposit the good quality thin film of Rhodamine B dye on fluorine doped tin oxide glass substrate by the low cost spin coating technique and study their linear and nonlinear optical parameters. The thickness of the thin film was measured about 300 nm with alpha step system. The transmittance of the fabricated thin film was found to be above 75% corresponding to the fluorine doped tin oxide layer. The structural analysis was performed with X-rays diffraction spectroscopy. Atomic force microscope showed the topographic image of deposited thin film. Linear optical constant like absorption coefficient, band gap, and extinction index was calculated. The dielectric constant was calculated to know the optical response of Rhodamine B dye over fluorine doped tin oxide substrate. The nonlinear optical constant like linear optical susceptibility χ(1), nonlinear optical susceptibility χ(3), nonlinear refractive index (n2) were calculated by spectroscopic method. This method has advantage over the experimental method like Z-Scan for organic dye base semiconductors for future advance optoelectronics applications like dye synthesis solar cell.

  16. Structural and Optical Properties of Ultra-high Pure Hot Water Processed Ga2O3 Thin Film

    Directory of Open Access Journals (Sweden)

    Subramani SHANMUGAN

    2016-05-01

    Full Text Available Thin film based gas sensor is an advanced application of thin film especially Ga2O3 (GO thin film gas sensor is useful for high temperature gas sensor. The effect of moisture or environment on thin film properties has more influence on gas sensing properties. Radio Frequency sputtered Ga2O3 thin film was synthesized and processed in ultra-high pure hot water at 95 °C for different time durations. The structural properties were verified by the Xray Diffraction technique and the observed spectra revealed the formation of hydroxyl compound of Gallium (Gallium Oxide Dueterate – GOD on the surface of the thin film and evidenced for structural defects as an effect of moisture. Decreased crystallite size and increased dislocation density was showed the crystal defects of prepared film. From the Ultra Violet – Visible spectra, decreased optical transmittance was noticed for various processing time. The formation of needle like GOD was confirmed using Field Emission Secondary Electron Microscope (FESEM images.DOI: http://dx.doi.org/10.5755/j01.ms.22.2.7186

  17. Microstructure and optical properties of nanocrystalline ZnO and ZnO:(Li or Al) thin films

    Energy Technology Data Exchange (ETDEWEB)

    Oral, A. Yavuz [Department of Materials Science and Engineering, Gebze Institute of Technology, Gebze 41400 (Turkey)]. E-mail: aoral@gyte.edu.tr; Bahsi, Z. Banu [Department of Materials Science and Engineering, Gebze Institute of Technology, Gebze 41400 (Turkey); Aslan, M. Hasan [Department of Physics, Gebze Institute of Technology, Gebze 41400 (Turkey)

    2007-03-15

    Zinc oxide thin films (ZnO, ZnO:Li, ZnO:Al) were deposited on glass substrates by a sol-gel technique. Zinc acetate, lithium acetate, and aluminum chloride were used as metal ion sources in the precursor solutions. XRD analysis revealed that Li doped and undoped ZnO films formed single phase zincite structure in contrast to Al:ZnO films which did not fully crystallize at the annealing temperature of 550 deg. C. Crystallized films had a grain size under 50 nm and showed c-axis grain orientation. All films had a very smooth surface with RMS surface roughness values between 0.23 and 0.35 nm. Surface roughness and optical band tail values increased by Al doping. Compared to undoped ZnO films, Li doping slightly increased the optical band gap of the films.

  18. Optical and structural characterization of oleic acid-stabilized CdTe nanocrystals for solution thin film processing

    OpenAIRE

    Claudio Davet Gutiérrez-Lazos; Mauricio Ortega-López; Manuel A. Pérez-Guzmán; A. Mauricio Espinoza-Rivas; Francisco Solís-Pomar; Rebeca Ortega-Amaya; L. Gerardo Silva-Vidaurri; Castro-Peña, Virginia C; Eduardo Pérez-Tijerina

    2014-01-01

    This work presents results of the optical and structural characterization of oleic acid-stabilized cadmium telluride nanocrystals (CdTe-NC) synthesized by an organometallic route. After being cleaned, the CdTe-NC were dispersed in toluene to obtain an ink-like dispersion, which was drop-cast on glass substrate to deposit a thin film. The CdTe-NC colloidal dispersion as well as the CdTe drop-cast thin films were characterized with regard to the optical and structural properties. TEM analysis i...

  19. Host thin films incorporating nanoparticles

    Science.gov (United States)

    Qureshi, Uzma

    The focus of this research project was the investigation of the functional properties of thin films that incorporate a secondary nanoparticulate phase. In particular to assess if the secondary nanoparticulate material enhanced a functional property of the coating on glass. In order to achieve this, new thin film deposition methods were developed, namely use of nanopowder precursors, an aerosol assisted transport technique and an aerosol into atmospheric pressure chemical vapour deposition system. Aerosol assisted chemical vapour deposition (AACVD) was used to deposit 8 series of thin films on glass. Five different nanoparticles silver, gold, ceria, tungsten oxide and zinc oxide were tested and shown to successfully deposit thin films incorporating nanoparticles within a host matrix. Silver nanoparticles were synthesised and doped within a titania film by AACVD. This improved solar control properties. A unique aerosol assisted chemical vapour deposition (AACVD) into atmospheric pressure chemical vapour deposition (APCVD) system was used to deposit films of Au nanoparticles and thin films of gold nanoparticles incorporated within a host titania matrix. Incorporation of high refractive index contrast metal oxide particles within a host film altered the film colour. The key goal was to test the potential of nanopowder forms and transfer the suspended nanopowder via an aerosol to a substrate in order to deposit a thin film. Discrete tungsten oxide nanoparticles or ceria nanoparticles within a titanium dioxide thin film enhanced the self-cleaning and photo-induced super-hydrophilicity. The nanopowder precursor study was extended by deposition of zinc oxide thin films incorporating Au nanoparticles and also ZnO films deposited from a ZnO nanopowder precursor. Incorporation of Au nanoparticles within a VO: host matrix improved the thermochromic response, optical and colour properties. Composite VC/TiC and Au nanoparticle/V02/Ti02 thin films displayed three useful

  20. Dopant-induced modifications in structural and optical properties of ZnO thin films prepared by PLD

    Science.gov (United States)

    Hashmi, Jaweria Z.; Siraj, K.; Naseem, S.; Shaukat, S.

    2016-09-01

    The objective of the present work is to study the effect of yttrium doping concentration on the microstructure and optical behavior of ZnO thin films, deposited by pulsed laser deposition on silicon (001) substrates. The microstructural analysis of doped ZnO thin films shows columnar growth of the ZnO (002) plane under tensile stress, confirmed by Raman shifts of the E2 (high) mode. The optical properties are investigated by using a spectroscopic ellipsometer. Undoped and yttrium-doped ZnO films show high transparency in the visible region, and the estimated optical band gap energy is randomly shifted in the range 2.93-3.1 eV by increasing the yttrium doping level. Yttrium doping in ZnO is limited, which means that at doping concentrations higher than 3 wt.% of yttrium, the structural and optical properties show a shift towards those of undoped ZnO.

  1. Near-Field Optical Drilling of Sub-λ Pits in Thin Polymer Films.

    Science.gov (United States)

    Ding, Tao; Chikkaraddy, Rohit; Mertens, Jan; Baumberg, Jeremy J

    2017-06-21

    Under UV illumination, polymer films can undergo chain scission and contract. Using this effect, tightly focused laser light is shown to develop runaway near-field concentration that drills sub-100 nm pits through a thin film. This subwavelength photolithography can be controlled in real time by monitoring laser scatter from the evolving holes, allowing systematic control of the void diameter. Our model shows how interference between the substrate and film together with near-field focusing by the evolving crevice directs this formation and predicts minimum pit sizes in films of 100 nm thickness on gold substrates. The smallest features so far are 60 nm diameter pits using 447 nm light focused onto polystyrene through a ×100 objective (NA = 0.8). Such arrays of pits can be easily used as masks for fabricating more complex nanostructures, such as plasmonic nanostructures and biomicrofluidic devices. This demonstration shows the potential for harnessing near-field feedback in optical direct-writing for nanofabrication.

  2. Tailoring the structural and optical properties of TiN thin films by Ag ion implantation

    Science.gov (United States)

    Popović, M.; Novaković, M.; Rakočević, Z.; Bibić, N.

    2016-12-01

    Titanium nitride (TiN) thin films thickness of ∼260 nm prepared by dc reactive sputtering were irradiated with 200 keV silver (Ag) ions to the fluences ranging from 5 × 1015 ions/cm2 to 20 × 1015 ions/cm2. After implantation TiN layers were annealed 2 h at 700 °C in a vacuum. Ion irradiation-induced microstructural changes were examined by using Rutherford backscattering spectrometry, X-ray diffraction and transmission electron microscopy, while the surface topography was observed using atomic force microscopy. Spectroscopic ellipsometry was employed to get insights on the optical and electronic properties of TiN films with respect to their microstructure. The results showed that the irradiations lead to deformation of the lattice, increasing disorder and formation of new Ag phase. The optical results demonstrate the contribution of surface plasmon resonace (SPR) of Ag particles. SPR position shifted in the range of 354.3-476.9 nm when Ag ion fluence varied from 5 × 1015 ions/cm2 to 20 × 1015 ions/cm2. Shift in peak wavelength shows dependence on Ag particles concentration, suggesting that interaction between Ag particles dominate the surface plasmon resonance effect. Presence of Ag as second metal in the layer leads to overall decrease of optical resistivity of TiN.

  3. Investigation of optical, structural and morphological properties of nanostructured boron doped TiO2 thin films

    Indian Academy of Sciences (India)

    Savaş Sönmezoǧlu; Banu Erdoǧan; İskender Askeroǧlu

    2013-12-01

    Pure and different ratios (1, 3, 5, 7 and 10%) of boron doped TiO2 thin films were grown on the glass substrate by using sol–gel dip coating method having some benefits such as basic and easy applicability compared to other thin film production methods. To investigate the effect of boron doped on the physical properties of TiO2, structural, morphological and optical properties of growth thin films were examined. 1% boron-doping has no effect on optical properties of TiO2 thin film; however, optical properties vary with > 1%. From X-ray diffraction spectra, it is seen that TiO2 thin films together with doping of boron were formed along with TiB2 hexagonal structure having (111) orientation, B2O3 cubic structure having (310) orientation, TiB0.024O2 tetragonal structure having rutile phase (110) orientation and polycrystalline structures. From SEM images, it is seen that particles together with doping of boron have homogeneously distributed and held onto surface.

  4. Optical and electrical characterization of tin(II) 2,3-naphthalocyanine thin films containing agglomerated spherical particles

    Energy Technology Data Exchange (ETDEWEB)

    Panicker, Nisha S. [School of Pure and Applied Physics, Mahatma Gandhi University, Kottayam, Kerala 686560 (India); Gopinathan, T.G. [KE College, Mannanam, Kottayam, Kerala (India); Dhanya, I. [School of Pure and Applied Physics, Mahatma Gandhi University, Kottayam, Kerala 686560 (India); Menon, C.S., E-mail: prof.menoncs@gmail.co [School of Pure and Applied Physics, Mahatma Gandhi University, Kottayam, Kerala 686560 (India)

    2010-11-01

    Vacuum deposited tin(II)2,3-naphthalocyanine (SnNc) crystalline thin films were produced. The structural properties of the thin films were characterized using Fourier transform infrared spectroscopy (FTIR), which reveals traces of organic compounds within the as-deposited films. Surface morphological studies by scanning electron microscopy (SEM) were done and the films were found to be grainy in nature, comprising of small agglomerated spherical particles. Heat treatment decreased the optical band gap of the films due to the dependence of dilatation of the lattice and/or electron-lattice interaction. The electrical conductivity of the films at various heat treated stages shows that SnNc has a better conductivity by 10-50 times that of its earlier reported phthalocyanine counterpart and the activation energy was found to increase with annealing temperature.

  5. Influence of grain size on structural and optic properties of PbS thin films produced by SILAR method

    Energy Technology Data Exchange (ETDEWEB)

    Güneri, E., E-mail: emineg7@gmail.com [Department of Primary Education, Erciyes University, Kayseri 38039, Turkey. (Turkey); Göde, F.; Çevik, S. [Department of Physics, Mehmet Akif Ersoy University, Burdur 15030, Turkey. (Turkey)

    2015-08-31

    In this the paper, we use the successive ion layer adsorption and reaction technique (SILAR) chemical deposition method to fabricate good quality PbS thin films and the effects of grain size on the structural and optical properties of the thin films were determined by varying deposition cases. All of the films obtained in different dipping cycles show cubic rock-salt (NaCl) structure. The preferred orientation changed from the (111) direction to the (200) direction with increasing dipping cycles. Grain size determined from scanning electron microscopy (SEM) increased from 32 nm to 104 nm. Moreover, changing of atomic ratio of the thin films is determined according to the results of energy dispersive X-ray (EDX). The transmission of the thin films was characterized by UV–Vis measurements from 400 nm to 1100 nm. It was determined from the allowed direct graphics that the energy band gaps of the thin films shift from 1.33 eV to 1.92 eV in connection with deposition conditions. The variation in band gap may be attributed to the variation of grain size. Additionally, the refractive index (n), extinction coefficient (k), real (ε{sub 1}) and imaginary (ε{sub 2}) dielectric constants varied with increasing immersion cycles. - Highlights: • The effects of grain size on the structural, optical properties of PbS thin films deposited by SILAR were investigated. • The preferred orientation varied from the (111) direction to the (200) direction with changing grain size. • The energy band gaps of the thin films shift from 1.33 eV to 1.92 eV in connection with deposition conditions. • The refractive index, extinction coefficient, real and imaginary dielectric constants varied with increasing dipping cycles.

  6. Influence of Substrate Temperature on Structural, Electrical and Optical Properties of ZnO:Al Thin Films

    Directory of Open Access Journals (Sweden)

    Sudjatmoko

    2009-07-01

    Full Text Available Transparent and conductive aluminium-doped zinc oxide thin films have been prepared by dc magnetron sputtering technique using targets composed of ZnO and aluminium. Polycrystalline ZnO:Al films were deposited onto a heated glass substrate. Surface morphology and crystalline structure as well as optical and electrical properties of the deposited films were found to depend directly on substrate temperature. From optical and electrical analysis it was observed that optical transmittance and conductivity of the ZnO:Al transparent conductive oxide films increased when the deposition temperature was raised from 200 to 400 oC. Films grown on substrates heated at 300 oC showed a high conductivity value of 0.2 x 102 Ω-1cm-1 and a visible transmission of about 80%. The growth of ZnO:Al thin films on the surface of glass substrate at temperatures of 300 oC and aluminium doping levels of 0.9 at.% were the best to attain ZnO:Al films with optical and structural qualities as required for solar cell applications, as a window material in antireflection coatings or optical filters.

  7. Biomimetic thin film deposition

    Energy Technology Data Exchange (ETDEWEB)

    Rieke, P.R.; Graff, G.E.; Campbell, A.A.; Bunker, B.C.; Baskaran, S.; Song, L.; Tarasevich, B.J.; Fryxell, G.E.

    1995-09-01

    Biological mineral deposition for the formation of bone, mollusk shell and other hard tissues provides materials scientists with illustrative materials processing strategies. This presentation will review the key features of biomineralization and how these features can be of technical importance. We have adapted existing knowledge of biomineralization to develop a unique method of depositing inorganic thin films and coating. Our approach to thin film deposition is to modify substrate surfaces to imitate the proteins found in nature that are responsible for controlling mineral deposition. These biomimetic surfaces control the nucleation and growth of the mineral from a supersaturated aqueous solution. This has many processing advantages including simple processing equipment, environmentally benign reagents, uniform coating of highly complex shapes, and enhanced adherence of coating. Many different types of metal oxide, hydroxide, sulfide and phosphate materials with useful mechanical, optical, electronic and biomedical properties can be deposited.

  8. Thin film processes II

    CERN Document Server

    Kern, Werner

    1991-01-01

    This sequel to the 1978 classic, Thin Film Processes, gives a clear, practical exposition of important thin film deposition and etching processes that have not yet been adequately reviewed. It discusses selected processes in tutorial overviews with implementation guide lines and an introduction to the literature. Though edited to stand alone, when taken together, Thin Film Processes II and its predecessor present a thorough grounding in modern thin film techniques.Key Features* Provides an all-new sequel to the 1978 classic, Thin Film Processes* Introduces new topics, and sever

  9. Pyrolyzed thin film carbon

    Science.gov (United States)

    Tai, Yu-Chong (Inventor); Liger, Matthieu (Inventor); Harder, Theodore (Inventor); Konishi, Satoshi (Inventor); Miserendino, Scott (Inventor)

    2010-01-01

    A method of making carbon thin films comprises depositing a catalyst on a substrate, depositing a hydrocarbon in contact with the catalyst and pyrolyzing the hydrocarbon. A method of controlling a carbon thin film density comprises etching a cavity into a substrate, depositing a hydrocarbon into the cavity, and pyrolyzing the hydrocarbon while in the cavity to form a carbon thin film. Controlling a carbon thin film density is achieved by changing the volume of the cavity. Methods of making carbon containing patterned structures are also provided. Carbon thin films and carbon containing patterned structures can be used in NEMS, MEMS, liquid chromatography, and sensor devices.

  10. Ionic Self-Assembled Monolayer (ISAM) Nonlinear Optical Thin Films and Devices

    Science.gov (United States)

    1998-05-12

    elevated temperatures that is accompanied by a decreased film thickness. As the temperature is decreased water is reabsorbed , and the film swells to its...Vogtle, Supramolecular Chemistry; Wiley, New York, 1993. ISAM NLO Thin Films and Devices Final Report 28 [6] J. H. Fuhrhop and J. Koning, Membrane and

  11. Anomalous thickness-dependent optical energy gap of ALD-grown ultra-thin CuO films

    Science.gov (United States)

    Tripathi, T. S.; Terasaki, I.; Karppinen, M.

    2016-11-01

    Usually an inverse square relation between the optical energy gap and the size of crystallites is observed for semiconducting materials due to the strong quantum localization effect. Coulomb attraction that may lead to a proportional dependence is often ignored or considered less important to the optical energy gap when the crystallite size or the thickness of a thin film changes. Here we report a proportional dependence between the optical energy gap and the thickness of ALD-grown CuO thin films due to a strong Coulomb attraction. The ultrathin films deposited in the thickness range of 9-81 nm show a p-type semiconducting behavior when analyzed by Seebeck coefficient and electrical resistivity measurements. The indirect optical energy gap nature of the films is verified from UV-vis spectrophotometric measurements. A progressive increase in the indirect optical energy gap from 1.06 to 1.24 eV is observed with the increase in the thickness of the films. The data are analyzed in the presence of Coulomb attractions using the Brus model. The optical energy gap when plotted against the cubic root of the thickness of the films shows a linear dependence.

  12. Phase transformation and disorder effect on optical and electrical properties of Zn3P2 thin films.

    Science.gov (United States)

    El Zawawi, I K; Abdel Moez, A; Hammad, T R; Ibrahim, R S

    2012-08-01

    The phase transformation of zinc phosphide (Zn(3)P(2)) thin films was detected through isochronal annealing process. The effects on isochronal annealing on the internal structural, optical and electrical properties of deposited Zn(3)P(2) thin films have been discussed. The films were prepared by thermal evaporation under constant preparation conditions of vacuum 1.3×10(-5)Torr, substrate temperature (300K), rate of deposition (∼1nm/s) and film thickness (480nm). The annealing process was carried out under vacuum for 2h at different temperatures ranging from 373 to 623K. X-ray diffraction patterns showed that the as-deposited films and those annealed at temperatures less than 623K exhibit amorphous structure, while the films annealed at 623K showed tetragonal polycrystalline structure. The optical transmission and reflection spectra were measured at the wavelength range of 190-2500nm. The absorption coefficient spectra and the degree of disorder as measured from the absorption edge were determined. The indirect and direct optical energy band gaps were evaluated for indirect allowed and direct allowed transitions for amorphous and polycrystalline films, respectively. The refractive index n(o) increases with raising the annealing temperature which refers to more condensation in the material. The electrical resistivity for Zn(3)P(2) films decreases exponentially with raising the annealing temperature up to 623K as influenced by structure transformation and decreasing the degree of disorder in the films.

  13. Dyakonov-Tamm waves-based optical sensing using sculptured nematic thin film

    Science.gov (United States)

    Abbas, Farhat; Naqvi, Qaisar A.; Faryad, Muhammad

    2015-06-01

    Dyakonov-Tamm (DT) waves are highly sensitive to the constitutive properties of the partnering materials near the interface. DT waves are excited at the interface of two dielectric materials of which at least one is anisotropic and periodically nonhomogeneous normal to their interface. Sculptured nematic thin film (SNTF) is a good candidate for the periodically nonhomogeneous dielectric partner for optical sensing of a fluid due to its porosity. The nanoscale parameters of an uninfiltrated SNTF obtained from the inverse Bruggeman homogenization formalism were used in the forward Bruggeman homogenization formalism to determine the constitutive parameters for the infiltrated SNTF. The sensitivity of DT waves to the refractive index was analyzed for two possible sensing modalities and it was found that the sensitivity was comparable to that of the chiral sculptured thin films (STFs) made of the same material as of the SNTF. This implies that the sensing with DT waves is robust, is independent of the morphology of the partnering nonhomogeneous dielectric material and could make the sensing easier since SNTFs are easier to fabricate than the chiral STFs.

  14. Investigations on nonlinear optical properties of electron beam treated Gd:ZnO thin films for photonic device applications

    Science.gov (United States)

    Spoorthi, K.; Pramodini, S.; Kityk, I. V.; Abd-Lefdil, M.; Sekkati, M.; El Fakir, A.; Rao, Ashok; Sanjeev, Ganesh; Poornesh, P.

    2017-06-01

    In this article, we report the third-order nonlinear optical properties of electron beam irradiated gadolinium-doped zinc oxide (GZO) thin films prepared using the spray pyrolysis deposition technique. GZO thin films were treated with an electron beam from a variable energy microtron accelerator at dose rates ranging from 1-5 kGy. Nonlinear optical measurements were conducted by employing the single beam Z-scan technique. A continuous wave He-Ne laser operating at 633 nm was used as the source of excitation. Closed aperture Z-scan results reveal that the films exhibit self-defocusing nonlinearity. Open aperture Z-scan results exhibit a switching over phenomena of reverse saturable absorption to saturable absorption for thin film irradiated at 3 kGy, indicating the influence of electron beams on optical nonlinearity. The significant change in third-order nonlinear optical susceptibility χ (3) ranging from 2.14  ×  10-3 to 3.12  ×  10-3 esu is attributed to the effect of electron beam irradiation. The study shows that the nonlinear coefficients of GZO films can be tuned by electron beams for use in nonlinear optical device applications.

  15. Measurement of thickness distribution, optical constants, and roughness parameters of rough nonuniform ZnSe thin films.

    Science.gov (United States)

    Nečas, David; Ohlídal, Ivan; Franta, Daniel; Ohlídal, Miloslav; Čudek, Vladimír; Vodák, Jiří

    2014-09-01

    Epitaxial ZnSe thin films exhibiting two important defects, i.e., boundary roughness and thickness nonuniformity, prepared on GaAs substrates, are optically characterized using a combination of variable-angle spectroscopic ellipsometry, spectroscopic near-normal reflectometry, and imaging spectroscopic reflectometry (ISR). The influence of boundary roughness is incorporated into optical quantity formulas by the Rayleigh-Rice theory. Thickness nonuniformity is included using averaging of the unnormalized Mueller matrices. The dispersion model of the optical constants of the ZnSe films is based on parametrization of the joint density of electronic states. Very thin overlayers represented by thin films with identically rough boundaries are taken into account on the upper boundaries of the ZnSe films. Standard optical techniques are used to determine the spectral dependencies of the optical constants of the ZnSe films, together with the parameters of roughness and thickness nonuniformity. ISR is then used to find the maps of the local thickness and local rms value of height irregularities. The values of roughness parameters, determined using the standard techniques and ISR, are verified by a comparison with results obtained by atomic force microscopy.

  16. Sn-doped ZnO nanocrystalline thin films with enhanced linear and nonlinear optical properties for optoelectronic applications

    Science.gov (United States)

    Ganesh, V.; Yahia, I. S.; AlFaify, S.; Shkir, Mohd.

    2017-01-01

    In the current work, nanocrystalline undoped and Sn doped ZnO thin films with different doping concentrations (1, 3, 5, 7 at%) have been deposited on glass substrate by low cost spin coating technique. The strong effect of Sn doping on structural, morphological, optical, nonlinear properties have been observed. X-ray diffraction study revealed that all the thin films are preferentially grown along (002) plane. The crystallite size is found to be increased with increasing the concentration of Sn, similar behavior was observed by atomic force microscopy analysis. Optical study shows that the prepared thin films are highly transparent. The direct optical band gap was calculate and found to be 3.16, 3.20, 3.22, 3.34, 3.18 eV for pure and doped films respectively. The refractive index, linear susceptibility, nonlinear absorption coefficient, nonlinear susceptibility and nonlinear refractive index were calculated. Furthermore, the third order nonlinear optical properties are investigated using Z-scan technique and their values are found to be -3.75×10-8 cm2/W, -3.76×10-3 cm/W and 0.65×10-3 esu for 7% Sn doped ZnO, respectively. There is a good correlation between theoretical and experimental third order nonlinear properties and higher values shows that the deposited films are may be applied in nonlinear optical applications.

  17. Characterization of optical constants and dispersion parameters of highly transparent Ge20Se76Sn4 amorphous thin film

    Science.gov (United States)

    Abd-Elrahman, M. I.; Hafiz, M. M.; Abdelraheem, A. M.; Abu-Sehly, A. A.

    2015-12-01

    Amorphous chalcogenide Ge20Se76Sn4 thin films of six different thicknesses (50-350 nm) are prepared by the thermal evaporation technique. Optical transmission and reflection spectra, in the wavelength range of the incident photons from 250 to 2500 nm, are used to study the effect of the film thickness on some optical properties. It is found that the effect of film thickness leads to increase in the absorption coefficient, refractive index, extinction coefficient and the width of the tails of localized states in the gap region. The decrease in optical band gap energy with increasing the film thickness is attributed to the formation of a band tail which narrows down the band gap. Dispersion analyses of refractive index reveal a decrease in the single-oscillator energy and an increase in the dispersion energy with increase in film thickness.

  18. Optical and Electrical Properties of the Different Magnetron Sputter Power 300°C Deposited -ZnO Thin Films and Applications in p-i-n -Si:H Thin-Film Solar Cells

    Directory of Open Access Journals (Sweden)

    Fang-Hsing Wang

    2013-01-01

    Full Text Available A compound of ZnO with 3 wt% Ga2O3 (ZnO : Ga2O3 = 97 : 3 in wt%, GZO was sintered at C as a target. The GZO thin films were deposited on glass using a radio frequency magnetron sputtering system at C by changing the deposition power from 50 W to 150 W. The effects of deposition power on the crystallization size, lattice constant (c, resistivity, carrier concentration, carrier mobility, and optical transmission rate of the GZO thin films were studied. The blue shift in the transmission spectrum of the GZO thin films was found to change with the variations of the carrier concentration because of the Burstein-Moss shifting effect. The variations in the optical band gap ( value of the GZO thin films were evaluated from the plots of , revealing that the measured value decreased with increasing deposition power. As compared with the results deposited at room temperature by Gong et al., (2010 the C deposited GZO thin films had apparent blue shift in the transmission spectrum and larger value. For the deposited GZO thin films, both the carrier concentration and mobility linearly decreased and the resistivity linearly increased with increasing deposition power. The prepared GZO thin films were also used as transparent electrodes to fabricate the amorphous silicon thin-film solar cells, and their properties were also measured.

  19. Effect of aluminium doping on structural and optical properties of ZnO thin films by sol-gel method

    Energy Technology Data Exchange (ETDEWEB)

    Vijayaprasath, G.; Murugan, R.; Ravi, G., E-mail: raviganesa@rediffmail.com, E-mail: gravicrc@gmail.com [Department of Physics, Alagappa University, Karaikudi – 630003 (India); Hayakawa, Y. [Research Institute of Electronics, Shizuoka University, Hamamatsu 432-8011 (Japan)

    2015-06-24

    We systematically investigated the structural, morphological and optical properties of 0.05 mol % Al doped ZnO (Al:ZnO) thin films deposited on glass substrates by sol-gel spin coating method. The influences of Al doping in ZnO thin films are characterized by Powder X-ray diffraction study. ZnO and Al:ZnO thin films have showed hexagonal wurtzite structure without any secondary phase in c-axis (002) orientation. The SEM images also proved the hexagonal rod like morphologies for both films. All the films exhibited transmittance of 70-80% in the visible range up to 800 nm and cut-off wavelength observed at ∼390 nm corresponding to the fundamental absorption of ZnO. The band gap of the ZnO thin films slightly widened with the Al doping. The photoluminescence properties have been studied for Al: ZnO thin films and the results are presented in detail.

  20. Structural and optical properties of In doped Se-Te phase-change thin films: A material for optical data storage

    Science.gov (United States)

    Pathak, H. P.; Shukla, Nitesh; Kumar, Vipin; Dwivedi, D. K.

    2016-02-01

    Se75-xTe25Inx (x = 0, 3, 6, & 9) bulk glasses were obtained by melt quench technique. Thin films of thickness 400 nm were prepared by thermal evaporation technique at a base pressure of 10-6 Torr onto well cleaned glass substrate. a-Se75-xTe25Inx thin films were annealed at different temperatures for 2 h. As prepared and annealed films were characterized by X-ray diffraction and UV-Vis spectroscopy. The X-ray diffraction results show that the as-prepared films are of amorphous nature while it shows some poly-crystalline structure in amorphous phases after annealing. The optical absorption spectra of these films were measured in the wavelength range 400-1100 nm in order to derive the extinction and absorption coefficient of these films. It was found that the mechanism of optical absorption follows the rule of allowed non-direct transition. The optical band gap of as prepared and annealed films as a function of photon energy has been studied. The optical band gap is found to decrease with increase in annealing temperature in the present glassy system. It happens due to crystallization of amorphous films. The decrease in optical band gap due to annealing is an interesting behavior for a material to be used in optical storage. The optical band gap has been observed to decrease with the increase of In content in Se-Te glassy system.

  1. Thickness dependence of structural, electrical and optical behaviour of undoped ZnO thin films

    Energy Technology Data Exchange (ETDEWEB)

    Bouderbala, M.; Hamzaoui, S. [Laboratoire de Microscopie Electronique et des Sciences des Materiaux, Departement de Physique, USTO, B.P. 1505, El-Mnaouer, 31000 Oran (Algeria); Amrani, B. [Department of Physics, Centre Universitaire de Mascara, Mascara 29000 (Algeria)], E-mail: abouhalouane@yahoo.fr; Reshak, Ali H. [Institute of Physical Biology-South Bohemia University, Institute of System Biology and Ecology-Academy of Sciences, Nove Hrady 37333 (Czech Republic); Adnane, M.; Sahraoui, T.; Zerdali, M. [Laboratoire de Microscopie Electronique et des Sciences des Materiaux, Departement de Physique, USTO, B.P. 1505, El-Mnaouer, 31000 Oran (Algeria)

    2008-09-01

    Undoped ZnO thin films of different thicknesses were prepared by r.f. sputtering in order to study the thickness effect upon their structural, morphological, electrical and optical properties. The results suggest that the film thickness seems to have no clear effect upon the orientation of the grains growth. Indeed, the analysis with X-ray diffraction show that the grains were always oriented according to the c(0 0 2)-axis perpendicular to substrate surface whatever the thickness is. However, the grain size was influenced enough by this parameter. An increase in the grain size versus the thickness was noted. For the electrical properties, measurements revealed behaviour very dependent upon thickness. The resistivity decreased from 25 to 1.5x10{sup -3} {omega} cm and the mobility increased from 2 to 37 cm{sup 2} V{sup -1} s{sup -1} when the thickness increased from 70 to 1800 nm while the carrier concentration seems to be less affected by the film thickness and varied slightly remaining around 10{sup 20} cm{sup -3}. Nevertheless, a tendency to a decrease was noticed. This behaviour in electrical properties was explained by the crystallinity and the grain size evolution. The optical measurements showed that all the samples have a strong transmission higher than 80% in the visible range. A slight shift of the absorption edge towards the large wavelengths was observed as the thickness increased. This result shows that the band gap is slightly decreases from 3.37 to 3.32 eV with the film thickness vary from 0.32 to 0.88 {mu}m.

  2. Influence of argon ambience on the structural, morphological and optical properties of pulsed laser ablated zinc sulfide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Chalana, S.R.; Vinodkumar, R.; Navas, I. [Department of Optoelectronics, University of Kerala, Kariavattom, Thiruvananthapuram 695581, Kerala (India); Ganesan, V. [UGC-DAE Consortium for Scientific Research, Khandwa Road, Indore 452 017 (India); Mahadevan Pillai, V.P., E-mail: vpmpillai9@gmail.com [Department of Optoelectronics, University of Kerala, Kariavattom, Thiruvananthapuram 695581, Kerala (India)

    2012-04-15

    Nanostructured zinc suplhide thin films are successfully deposited on quartz substrates using pulsed laser deposition (PLD) under different argon pressures (0, 5, 10, 15 and 20 Pa). The influence of argon ambience on the microstructural, optical and luminescence properties of zinc sulfide (ZnS) thin films is systematically investigated. The GIXRD data suggests rhombohedral structure for ZnS films prepared under different argon ambience. Self-assembly of grains into well-defined patterns along the y direction is observed in the AFM image of the film deposited under argon pressure 20 Pa. All the films show a blue shift in optical band gap. This can be due to the quantum confinement effect and less widening of conduction and valence band for the films with less thickness and smaller grain size. The PL spectra of the different films are recorded at excitation wavelengths 250 nm and 325 nm and the spectra are interpreted. The PL spectra of the films recorded at excitation wavelength 325 nm show intense yellow emission. The film deposited under an argon pressure of 15 Pa shows the highest PL intensity for excitation wavelength 325 nm. For the PL spectra (excitation at 250 nm), the highest PL intensity is observed for the film prepared under argon free ambience. In our study, 15 Pa is the optimum argon pressure for better crystallinity and intense yellow emission when excited at 325 nm. - Highlights: Black-Right-Pointing-Pointer All the films prepared under argon ambience show the presence of rhombohedral phase. Black-Right-Pointing-Pointer All the films show a blue shift in optical band gap. Black-Right-Pointing-Pointer Film deposited at Ar pressure 20 Pa shows a self-assembly of grain in regular patterns. Black-Right-Pointing-Pointer PL spectra of the films for excitation wavelength of 325 nm show an intense yellow emission.

  3. Structural and optical properties of r.f. sputtered Bi 2VO 5.5 thin films

    Science.gov (United States)

    Viswanathan, M.; Thutupalli, G. K. M.; Varma, K. B. R.

    1996-05-01

    Thin films of Bismuth Vanadate Bi 2VO 5.5 (BiV) have been deposited on amorphous quartz and polycrystalline silicon substrates by r.f. sputtering technique and characterised for their structural and optical properties. The as-deposited films at room temperature are found to be amorphous and transparent over the spectral range of 0.55μm to 12μm. Post-deposition annealing at 400°C in air shows the formation of the BiV crystalline phase. The optical constants namely refractive index, extinction coefficient and optical bandgap of both amorphous and crystalline films have been determined. The refractive index of the as-deposited film is around 2.4 at 0.7 μm and drops to 2.26 at 1.56 μm. The optical bandgap of the material has been determined from the computed values of the absorption coefficients.

  4. Thickness and optical constants calculation for chalcogenide-alkali metal Se80Te8(NaCl)12 thin film

    Science.gov (United States)

    Abd-Elrahman, M. I.; Abu-Sehly, A. A.; Bakier, Y. M.; Hafiz, M. M.

    2017-09-01

    Chalcogenide-alkali metal semiconducting thin films of four different thicknesses of Se80Te8(NaCl)12 are deposited from bulk by thermal evaporation technique. The crystallinity of the film improves with increasing of thickness as indicated by the recorded X-ray diffraction patterns. The transmission and reflection spectra are measured in the wavelength range of the incident photons from 250 to 2500 nm. The thickness and optical constants of the films are calculated based on Swanepeol method using the interference patterns appeared in the transmission spectra. It is found that the films have absorption mechanism which is an indirect allowed transition. The effect of the film thickness on the refractive index and the high-frequency dielectric constant are studied. With increasing the film thickness, both the absorption coefficient and high-frequency dielectric constant increase while the single-oscillator energy, optical band gap and extinction coefficient decrease.

  5. Structural, optical, and electrical properties of Mo-doped ZnO thin films prepared by magnetron sputtering

    Science.gov (United States)

    Wu, Muying; Yu, Shihui; Chen, Guihua; He, Lin; Yang, Lei; Zhang, Weifeng

    2015-01-01

    Molybdenum doped zinc oxide thin films have been prepared by RF magnetron sputtering. The influence of the film thickness (120-500 nm) on the structural, electrical, and optical properties of the films is investigated respectively. X-ray diffraction (XRD) studies reveal that with an increase in the film thickness, the crystallinity of the film improves. The obtained film with thickness of 500 nm exhibits the best electrical properties with the lowest resistivity of around 9.6 × 10-4 Ω cm. The mobility varied from 7.8 to 14.7 cm2 V-1 s-1 without reducing the achieved high carrier concentration of ∼4.5 × 1020 cm-3. Optical band gaps extracted from transmission spectra shows irregular changes due to the Burstein-Moss shift modulated by many-body effects.

  6. Effect of sol-age on the surface and optical properties of sol-gel derived mesoporous zirconia thin films

    Directory of Open Access Journals (Sweden)

    Manish Kumar

    2011-06-01

    Full Text Available Mesoporous ZrO2 thin films have been deposited by a modified sol-gel dip coating technique using HCl as catalyst. Effects of sol-age on the surface and on the optical properties are studied. Transmission electron micrographs of the films reveal the pore dimensions in mesoporous regime. A strong correlation in surface topography with sol-age has been observed where increase in sol-age induces a systematic enhancement in the value of root mean square roughness of the films. Optical study shows that deposited films have high transmittance and an enhancement of 5.6 times in porosity in films prepared with sol-age of 10 days with respect to that of 1 day. Band gap estimation by Tauc's plots of films is observed to 5.74 eV, which shows invariance with the sol-age.

  7. Structural, optical, and electrical properties of Mo-doped ZnO thin films prepared by magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Wu, Muying, E-mail: wumy@dgut.edu.cn [School of Electronic Engineering, Dongguan University of Technology, Guangdong Dongguan 523808 (China); Yu, Shihui [School of Electronic and Information Engineering, Tianjin University, Tianjin 300072 (China); Chen, Guihua; He, Lin; Yang, Lei [School of Electronic Engineering, Dongguan University of Technology, Guangdong Dongguan 523808 (China); Zhang, Weifeng [Key Laboratory of Photovoltaic Materials of Henan Province and School of Physics and Electronics, Henan University, Kaifeng 475004 (China)

    2015-01-01

    Highlights: • Mo-doped ZnO thin films were prepared successfully by magnetron sputtering. • The lowest electrical resistivity of the MZO thin film is about 9.2 × 10{sup −4} Ω cm. • The mechanism of the changes of carrier mobility was studied. • The mechanism of the changes of band-gap was discussed and explained possibly. - Abstract: Molybdenum doped zinc oxide thin films have been prepared by RF magnetron sputtering. The influence of the film thickness (120–500 nm) on the structural, electrical, and optical properties of the films is investigated respectively. X-ray diffraction (XRD) studies reveal that with an increase in the film thickness, the crystallinity of the film improves. The obtained film with thickness of 500 nm exhibits the best electrical properties with the lowest resistivity of around 9.6 × 10{sup −4} Ω cm. The mobility varied from 7.8 to 14.7 cm{sup 2} V{sup −1} s{sup −1} without reducing the achieved high carrier concentration of ∼4.5 × 10{sup 20} cm{sup −3}. Optical band gaps extracted from transmission spectra shows irregular changes due to the Burstein–Moss shift modulated by many-body effects.

  8. OPTICAL CHARACTERIZATION OF TiO2 THIN FILM ON SILICON SUBSTRATE DEPOSITED BY DC REACTIVE MAGNETRON SPUTTERING

    Institute of Scientific and Technical Information of China (English)

    H.Q. Wang; H. Shen; D.C. Ba; B.W. Wang; L.S. Wen; D. Chen

    2005-01-01

    TiO2 thin film has attracted considerable attention in recent years, due to its different refractive index and transparency with amorphous and different crystals in the visible and near-infrared wavelength region, high dielectric constant, wide band gap, high wear resistance and stability, etc, for which make it being used in many fields. This paper aims to investigate the optical characterization of thin film TiO2 on silicon wafer. The TiO2 thin films were prepared by DC reactive magnetron sputtering process from Ti target. The reflectivity of the films was measured by UV-3101PC, and the index of refraction (n) and extinction coefficient (k) were measured by n & k Analyzer 1200.

  9. Optical and Micro-Structural Properties of ZnO Thin Films Grown on Silicon Substrate by Pulsed Laser Deposition

    Institute of Scientific and Technical Information of China (English)

    2006-01-01

    ZnO thin films were deposited on n-Si (111) at various substrate temperatures and oxygen pressures by pulsed laser deposition (PLD) using a Nd∶YAG laser with the wavelength of 1064 nm. X-ray diffraction (XRD), photoluminescence (PL), scanning electron microscopy (SEM) and transmission electron microscopy (TEM) were used to analyze the microstructure, optical property and morphology of the ZnO thin films. A comparatively optimal crystallized ZnO thin film was obtained at the substrate temperature of 600 ℃ in oxygen pressure of 50 mTorr. The intensity of the luminescence strongly depends on the stoichiometry of the film as well as the crystalline quality.

  10. Optical, electrical and sensing properties of β-ketoimine calix[4]arene thin films

    Energy Technology Data Exchange (ETDEWEB)

    Echabaane, M., E-mail: mosaab.echabaane@yahoo.fr [Laboratoire des Interfaces et Matériaux Avancés (LIMA), Faculté des Sciences de Monastir, Avenue de l' environnement, 5000 Monastir (Tunisia); Rouis, A. [Laboratoire des Interfaces et Matériaux Avancés (LIMA), Faculté des Sciences de Monastir, Avenue de l' environnement, 5000 Monastir (Tunisia); Bonnamour, I. [Institut de Chimie and Biochimie Moléculaires and Supramoléculaires (ICBMS), UMR CNRS 5246, 43 Boulevard du 11 Novembre 1918, Université Claude Bernard Lyon 1, 69100 Villeurbanne (France); Ben Ouada, H. [Laboratoire des Interfaces et Matériaux Avancés (LIMA), Faculté des Sciences de Monastir, Avenue de l' environnement, 5000 Monastir (Tunisia)

    2013-09-16

    Optical, electrical and ion sensing properties of β-ketoimine calix[4]arene thin films have been investigated. These calix[4]arene derivative films exhibit absorption spectra with a resolved electronic structure in the UV–vis and the energy gap was found to be 3.65 eV. Electrical properties of ITO/β-ketoimine calix[4]arene/Al devices have been investigated by I–V characteristics and impedance spectroscopy measurements. The conduction is governed by space-charge-limited current (SCLC) mechanism. The impedance spectroscopy study showed a hopping transport process, a typical behavior of disordered materials. The device was modeled by a single parallel resistor and capacitor network in series with a resistance. The β-ketoimine calix[4]arene was used for the conception of the novel optical chemical sensor and the detection of Cu{sup 2+} ions was monitored by UV–visible spectroscopy. The linear dynamic range for the determination of Cu{sup 2+} has been 10{sup −5}–10{sup −3.7} M with a detection limit of 10{sup −5} M. The characteristics of this optode such as regeneration, repeatability, reproducibility, short-term stability, life time and ion selectivity have been discussed. - Highlights: • We examine optical properties of β-ketoimine calix[4]arene ligand. • We investigate the electric properties of ITO/β-ketoimine calix[4]arene/Al device. • We study the sensing properties of optode films for the detection of copper (II)

  11. Effect of thermal annealing on structure and optical band gap of amorphous Se72Te25Sb3 thin films

    Science.gov (United States)

    Dwivedi, D. K.; Pathak, H. P.; Kumar, Vipin; Shukla, Nitesh

    2014-04-01

    Thin films of a-Se72Te25Sb3 were prepared by vacuum evaporation technique in a base pressure of 10-6 Torr on to well cleaned glass substrate. a-Se72Te25Sb3 thin films were annealed at different temperatures below their crystallization temperatures for 2h. The structural analysis of the films has been investigated using X-ray diffraction technique. The optical band gap of as prepared and annealed films as a function of photon energy in the wavelength range 400-1100 nm has been studied. It has been found that the optical band gap decreases with increasing annealing temperatures in the present system.

  12. Room-Temperature Magnetic and Magneto-Optical Properties of Sr2FeMoO6 Thin Films

    Science.gov (United States)

    Asano, Hidefumi; Osugi, Masahiro; Kohara, Yasuhiro; Higashida, Daisuke; Matsui, Masaaki

    2001-08-01

    Epitaxial thin films of a half-metallic ferromagnet Sr2FeMoO6 have been grown on (001) SrTiO3, and MgO substrates by magnetron sputtering in Ar+H2 mixture gas. Their structural, magnetic, magneto-optical and transport properties at room temperature were investigated and compared. Large difference has been observed especially in the magnetic and magneto-optical properties between thin films on SrTiO3 and MgO@. The films on SrTiO3 exhibited stronger out-of-plane magnetic anisotropy and larger complex polar Kerr effect with a rotation θk up to -0.32\\circ at 1.6 eV and RT@. The observed difference in the properties of the films on the two substrates can be interpreted in terms of the structural disorder.

  13. Study of the optical properties of CuAlS2 thin films prepared by two methods

    Science.gov (United States)

    Ahmad, S. M.

    2017-04-01

    CuAlS2 thin films were successfully deposited on glass substrates using two methods: chemical spray pyrolysis (CSP) and chemical bath deposition (CBD). It was confirmed from the X-ray diffraction (XRD) analysis that CSP films exhibited a polycrystalline nature while amorphous nature was diagnosed for CBD films. Also XRD analysis was utilized to compute grain size, strain and dislocation density. Surface morphology was characterized using scanning electron microscope and photomicroscope images. The optical absorption measurement revealed that the direct allowed electronic transition with band gaps 2.8 eV and 3.0 eV for CBD and CSP methods, respectively. The optical constants, such as extinction coefficient ( k), refractive index ( n), real and imaginary dielectric constants ( ɛ 1, ɛ 2) were discussed. The photoluminescence (PL) spectra of CuAlS2 thin films appeared as a single peak for each of them, and this is attributed to band-to-band transition.

  14. Advances in thin film diffraction instrumentation by X-ray optics

    Energy Technology Data Exchange (ETDEWEB)

    Haase, A. [Rich. Seifert and Co., Analytical X-ray Systems, Ahrensburg (Germany)

    1996-09-01

    The structural characterisation of thin films requires a parallel X-ray beam of high intensity. Parallel beam geometry is commonly used in high resolution and single crystal experiments, but also in the field of X-ray diffraction for polycrystalline material (e.g. in phase, texture and stress analysis). For grazing incidence diffraction (GID), the use of small slits on the primary side and of long soller slits with a flat monochromator on the secondary side is standard. New optical elements have been introduced with polychromatic or monochromatic radiation. By means of different applications the results are compared with those of classical beam optics. X-ray fiber optics utilize total external reflection of X-rays on smooth surfaces. Effects of monochromatization are presented. In many fields of application, fiber optics may replace conventional collimators. The use of primary and secondary channel cut crystals can also produce a high parallel monochromatic X-ray beam. A parabolically bent graded multilayer produces a monochromatic parallel beam of high intensity. Compared with classical Bragg-Brentano (focussing) geometry, excellent results have been obtained, especially for samples with an irregular shape. In combination with a channel cut monochromator there is a substantial gain in intensity leading to an increase of the dynamic intensity range of rocking curves.

  15. Investigation of Optical Nonlinearities in Bi-Doped Se-Te Chalcogenide Thin Films

    Science.gov (United States)

    Yadav, Preeti; Sharma, Ambika

    2015-03-01

    The present paper reports the nonlinear optical properties of chalcogenide Se85- x Te15Bi x (0 ≤ x ≤ 5) thin films. The formulation proposed by Boling, Fournier, and Snitzer and Tichy and Ticha has been used to compute the nonlinear refractive index n 2. The two-photon absorption coefficient β 2, and first- and third-order susceptibilities [ χ (1) and χ (3)] are also reported. The nonlinear refractive index n 2 is well correlated with the linear refractive index n and Wemple-DiDomenico (WDD) parameters, in turn depending on the density ρ and molar volume V m of the system. The density of the system is calculated experimentally by using Archimedes' principle. The linear optical parameters, viz. n, WDD parameters, and optical bandgap E g, are measured experimentally using ellipsometric curves obtained by spectrophotometry. The composition-dependent behavior of n 2 is analyzed on the basis of various parameters, viz. density, bond distribution, cohesive energy (CE), and optical bandgap E g, of the system. The variation of n 2 and β 2 with changing bandgap E g is also reported. The values of n 2 and χ (3) of the investigated chalcogenides are compared with those of pure silica, oxide, and other Se-based glasses.

  16. Effect of antimony addition on the optical behaviour of germanium selenide thin films

    Science.gov (United States)

    Sharma, Parikshit; Rangra, V. S.; Sharma, Pankaj; Katyal, S. C.

    2008-11-01

    This paper reports the influence of antimony (Sb) addition on the optical properties (optical energy gap and refractive index) of thin solid films of the chalcogenide glassy Ge0.17Se0.83-xSbx(x = 0, 0.03, 0.09, 0.12, 0.15) system. This has been done by analysing the transmittance (T) and reflectance (R) spectra in the spectral region 400-2000 nm. It was found that the optical energy gap decreases with increasing Sb content from 1.92 to 1.63 eV with an uncertainty of ± 0.01 eV. The results were interpreted in terms of bond energies and on the basis of the concept of electronegativity. The refractive index has been found to increase with increasing Sb content. The increase in the refractive index has been explained on the basis of polarizability. Dispersion of refractive index has been analysed using the Wemple-DiDomenico single oscillator model. The static refractive index increased from 2.45 to 2.91 for the studied compositions. An estimate of the energy gap has also been taken theoretically and it has been found that both the optical energy gap (measured from T and R spectra) and the theoretical energy gap follow similar trends.

  17. Effect of antimony addition on the optical behaviour of germanium selenide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Sharma, Parikshit; Rangra, V S [Department of Physics, H. P. University, Summer Hill, Shimla (171005) (India); Sharma, Pankaj; Katyal, S C [Department of Physics, Jaypee University of Information Technology, Waknaghat, Solan, H.P. (173215) (India)], E-mail: pankaj.sharma@juit.ac.in, E-mail: sharma_parikshit@yahoo.com

    2008-11-21

    This paper reports the influence of antimony (Sb) addition on the optical properties (optical energy gap and refractive index) of thin solid films of the chalcogenide glassy Ge{sub 0.17}Se{sub 0.83-x}Sb{sub x}(x = 0, 0.03, 0.09, 0.12, 0.15) system. This has been done by analysing the transmittance (T) and reflectance (R) spectra in the spectral region 400-2000 nm. It was found that the optical energy gap decreases with increasing Sb content from 1.92 to 1.63 eV with an uncertainty of {+-} 0.01 eV. The results were interpreted in terms of bond energies and on the basis of the concept of electronegativity. The refractive index has been found to increase with increasing Sb content. The increase in the refractive index has been explained on the basis of polarizability. Dispersion of refractive index has been analysed using the Wemple-DiDomenico single oscillator model. The static refractive index increased from 2.45 to 2.91 for the studied compositions. An estimate of the energy gap has also been taken theoretically and it has been found that both the optical energy gap (measured from T and R spectra) and the theoretical energy gap follow similar trends.

  18. Giant Zeeman shifts in the optical transitions of yttrium iron garnet thin films

    Science.gov (United States)

    Vidyasagar, R.; Alves Santos, O.; Holanda, J.; Cunha, R. O.; Machado, F. L. A.; Ribeiro, P. R. T.; Rodrigues, A. R.; Mendes, J. B. S.; Azevedo, A.; Rezende, S. M.

    2016-09-01

    We report the observation of giant Zeeman shifts in the optical transitions of high-quality very thin films of yttrium iron garnet (YIG) grown by rf sputtering on gadolinium gallium garnet substrates. The optical absorption profile measured with magneto-optical absorption spectroscopy shows dual optical transition in the UV-visible frequency region attributed to transitions from the O-2p valence band to the Fe-3d conduction band and from the O-2p valence band to Fe-2p53d6 excitonic states at the Γ-symmetry point of the YIG band structure. The application of a static magnetic field of only 0.6 kOe produces giant Zeeman shifts of ˜100 meV in the YIG band structure and ˜60 meV in the excitonic states corresponding to effective g-factors on the order of 104. The giant Zeeman effects are attributed to changes in energy levels by the large exchange fields of the Fe-3d orbitals during the magnetization process.

  19. Ultrafast All-Optical Phenomena and Devices Using Conjugated Polymer Thin Films

    Science.gov (United States)

    Hays, Andrew Wayne

    The Su-Schrieffer-Heeger formalism predicts shifts of oscillator strength from the valence and conduction bands to new sub-gap absorptions for both degenerate and nondegenerate ground state conjugated polymers. Photoinduced absorption studies on polyacetylene confirmed this behavior in degenerate ground state polymers. The shift in oscillator strength to form solitons takes place in less than one optical phonon period (family) with similar time scale for the creation of polarons and with time decays on the order of 10-1000 ps. These fast (and large) changes in the optical absorption spectrum suggest that the materials are excellent candidates for use in nonlinear optical devices and systems. Thin film waveguides are the obvious first choice. We have used the focused light attenuated total reflection technique (FLATR) to measure both the sign and the magnitude of the change in the complex index of refraction of a conjugated polymer in a waveguide configuration. In poly(3-hexylthiophene) we observe a picosecond decrease in the refractive index correlated with the subgap induced absorption. The magnitude of the picosecond modulation is | n_2 | ~eq 1 times 10^{ -4} (MW/cm^2)^{ -1}. Optical devices based on waveguiding are inherently serial devices. These sorts of devices would find use in general purpose digital optical computers and switching application for telecommunications. We have explored the possibility of using an engineered polymer in a parallel processing architecture. The final project in this thesis describes a femtosecond optical correlator based on degenerate four-wave mixing in the conjugated polymer poly (1,6 heptadiester) (PHDE). PHDE is a degenerate ground state polymer with a backbone similar to trans-polyacetylene. This material was synthesized to retain the ultrafast time response of polyacetylene and large optical nonlinearities. Additionally, side groups were added to yield solubility in organic solvents and improve environmental stability. Our

  20. Structural, electrical and optical studies on spray-deposited aluminium-doped ZnO thin film

    Indian Academy of Sciences (India)

    S Tewari; A Bhattacharjee

    2011-01-01

    Thin films of zinc oxide (ZnO) were deposited on cleaned glass substrates by chemical spray pyrolysis technique using Zn(CH3COO)2 as precursor solution. Also, aluminium-doped thin films of ZnO were prepared by using AlCl3 as doping solution for aluminium. The dopant concentration [Al/Zn atomic percentage (at%)] was varied from 0 to 1.5 at% in thin films of ZnO prepared in different depositions. Structural characterization of the deposited films was performed with X-ray diffraction (XRD) studies. It confirmed that all the films were of zinc oxide having polycrystalline nature and possessing typical hexagonal wurtzite structure with crystallite size varying between 100.7 and 268.6 nm. The films exhibited changes in relative intensities and crystallite size with changes in the doping concentration of Al. The electrical studies established that 1 at% of Aldoping was the optimum for enhancing electrical conduction in ZnO thin films and beyond that the distortion caused in the lattice lowered the conductivity. The films also exhibited distinct changes in their optical properties at different doping concentrations, including a blue shift and slight widening of bandgap with increasing Al dopant concentration.

  1. Management of light absorption in extraordinary optical transmission based ultra-thin-film tandem solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Mashooq, Kishwar; Talukder, Muhammad Anisuzzaman, E-mail: anis@eee.buet.ac.bd [Department of Electrical and Electronic Engineering, Bangladesh University of Engineering and Technology, Dhaka 1205 (Bangladesh)

    2016-05-21

    Although ultra-thin-film solar cells can be attractive in reducing the cost, they suffer from low absorption as the thickness of the active layer is usually much smaller than the wavelength of incident light. Different nano-photonic techniques, including plasmonic structures, are being explored to increase the light absorption in ultra-thin-film solar cells. More than one layer of active materials with different energy bandgaps can be used in tandem to increase the light absorption as well. However, due to different amount of light absorption in different active layers, photo-generated currents in different active layers will not be the same. The current mismatch between the tandem layers makes them ineffective in increasing the efficiency. In this work, we investigate the light absorption properties of tandem solar cells with two ultra-thin active layers working as two subcells and a metal layer with periodically perforated holes in-between the two subcells. While the metal layer helps to overcome the current mismatch, the periodic holes increase the absorption of incident light by helping extraordinary optical transmission of the incident light from the top to the bottom subcell, and by coupling the incident light to plasmonic and photonic modes within ultra-thin active layers. We extensively study the effects of the geometry of holes in the intermediate metal layer on the light absorption properties of tandem solar cells with ultra-thin active layers. We also study how different metals in the intermediate layer affect the light absorption; how the geometry of holes in the intermediate layer affects the absorption when the active layer materials are changed; and how the intermediate metal layer affects the collection of photo-generated electron-hole pairs at the terminals. We find that in a solar cell with 6,6-phenyl C61-butyric acid methyl ester top subcell and copper indium gallium selenide bottom subcell, if the periodic holes in the metal layer are square or

  2. Management of light absorption in extraordinary optical transmission based ultra-thin-film tandem solar cells

    Science.gov (United States)

    Mashooq, Kishwar; Talukder, Muhammad Anisuzzaman

    2016-05-01

    Although ultra-thin-film solar cells can be attractive in reducing the cost, they suffer from low absorption as the thickness of the active layer is usually much smaller than the wavelength of incident light. Different nano-photonic techniques, including plasmonic structures, are being explored to increase the light absorption in ultra-thin-film solar cells. More than one layer of active materials with different energy bandgaps can be used in tandem to increase the light absorption as well. However, due to different amount of light absorption in different active layers, photo-generated currents in different active layers will not be the same. The current mismatch between the tandem layers makes them ineffective in increasing the efficiency. In this work, we investigate the light absorption properties of tandem solar cells with two ultra-thin active layers working as two subcells and a metal layer with periodically perforated holes in-between the two subcells. While the metal layer helps to overcome the current mismatch, the periodic holes increase the absorption of incident light by helping extraordinary optical transmission of the incident light from the top to the bottom subcell, and by coupling the incident light to plasmonic and photonic modes within ultra-thin active layers. We extensively study the effects of the geometry of holes in the intermediate metal layer on the light absorption properties of tandem solar cells with ultra-thin active layers. We also study how different metals in the intermediate layer affect the light absorption; how the geometry of holes in the intermediate layer affects the absorption when the active layer materials are changed; and how the intermediate metal layer affects the collection of photo-generated electron-hole pairs at the terminals. We find that in a solar cell with 6,6-phenyl C61-butyric acid methyl ester top subcell and copper indium gallium selenide bottom subcell, if the periodic holes in the metal layer are square or

  3. Fabrication and optical properties of SnS thin films by SILAR method

    Science.gov (United States)

    Ghosh, Biswajit; Das, Madhumita; Banerjee, Pushan; Das, Subrata

    2008-08-01

    Although the fabrication of tin disulfide thin films by SILAR method is quiet common, there is, however, no report is available on the growth of SnS thin film using above technique. In the present work, SnS films of 0.20 μm thickness were grown on glass and ITO substrates by SILAR method using SnSO 4 and Na 2S solution. The as-grown films were smooth and strongly adherent to the substrate. XRD confirmed the deposition of SnS thin films. Scanning electron micrograph revealed almost equal distribution of the particle size well covered on the surface of the substrate. EDAX showed that as-grown SnS films were slightly rich in tin component while UV-vis transmission spectra exhibited high absorption in the visible region. The intense and sharp emission peaks at 680 and 825 nm (near band edge emission) dominated the photoluminescence spectra.

  4. Fabrication and optical properties of SnS thin films by SILAR method

    Energy Technology Data Exchange (ETDEWEB)

    Ghosh, Biswajit; Das, Madhumita; Banerjee, Pushan [Advanced Materials and Solar Photovoltaic Division, School of Energy Studies, Raja S.C. Mullick Road, Jadavpur University, Kolkata 700032 (India); Das, Subrata [Advanced Materials and Solar Photovoltaic Division, School of Energy Studies, Raja S.C. Mullick Road, Jadavpur University, Kolkata 700032 (India)], E-mail: neillohit@yahoo.co.in

    2008-08-15

    Although the fabrication of tin disulfide thin films by SILAR method is quiet common, there is, however, no report is available on the growth of SnS thin film using above technique. In the present work, SnS films of 0.20 {mu}m thickness were grown on glass and ITO substrates by SILAR method using SnSO{sub 4} and Na{sub 2}S solution. The as-grown films were smooth and strongly adherent to the substrate. XRD confirmed the deposition of SnS thin films. Scanning electron micrograph revealed almost equal distribution of the particle size well covered on the surface of the substrate. EDAX showed that as-grown SnS films were slightly rich in tin component while UV-vis transmission spectra exhibited high absorption in the visible region. The intense and sharp emission peaks at 680 and 825 nm (near band edge emission) dominated the photoluminescence spectra.

  5. Cu Ions Irradiation Impact on Structural and Optical Properties of GaN Thin Film

    Science.gov (United States)

    Shah, A.; Husnain, G.; Ahmad, Ishaq; Mahmood, Arshad

    2013-03-01

    Epitaxial grown Gallium nitride (GaN) thin film on sapphire was irradiated with Cu ions at various fluences (5×1014, 1 ×1015 and 5×1015cm-2). The level of lattice disorder, as measured by Rutherford backscattering spectrometry and channeling (RBS/C), gradually increases with the increasing of ions fluence. Lattice amorphization is observed for the sample irradiated with fluence of 5×1015cm-2 which is also confirmed by X-ray diffractometer (XRD) analysis. It was found that both Raman modes of GaN layer clearly shifted with Cu+ fluences. Both Raman and X-ray analyses explore that Cu atom substituted into Ga sites. Atomic force microscopy (AFM) images show the irradiated GaN surface roughness increases with the increasing ions fluence. The UV-visible transmittance spectrum and ellipsometric measurements show a decrease in the band gap value after irradiation of Cu ions in the GaN film. Moreover, the optical constants (n and k) of the films vary with the increasing of Cu ion fluences.

  6. Structural and optical properties of zinc selenide