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Sample records for optical propertiesof iii-nitrides

  1. Optical absorption and oxygen passivation of surface states in III-nitride photonic devices

    Rousseau, Ian; Callsen, Gordon; Jacopin, Gwénolé; Carlin, Jean-François; Butté, Raphaël; Grandjean, Nicolas

    2018-03-01

    III-nitride surface states are expected to impact high surface-to-volume ratio devices, such as nano- and micro-wire light-emitting diodes, transistors, and photonic integrated circuits. In this work, reversible photoinduced oxygen desorption from III-nitride microdisk resonator surfaces is shown to increase optical attenuation of whispering gallery modes by 100 cm-1 at λ = 450 nm. Comparison of photoinduced oxygen desorption in unintentionally and n+-doped microdisks suggests that the spectral changes originate from the unpinning of the surface Fermi level, likely taking place at etched nonpolar III-nitride sidewalls. An oxygen-rich surface prepared by thermal annealing results in a broadband Q improvement to state-of-the-art values exceeding 1 × 104 at 2.6 eV. Such findings emphasize the importance of optically active surface states and their passivation for future nanoscale III-nitride optoelectronic and photonic devices.

  2. Optical and Temporal Carrier Dynamics Investigations of III-Nitrides for Semiconductor Lighting

    Ajia, Idris A.

    2018-05-22

    III-nitride semiconductors suffer significant efficiency limitations; ‘efficiency’ being an umbrella term that covers an extensive list of challenges that must be overcome if they are to fulfil their vast potential. To this end, it is imperative to understand the underlying phenomena behind such limitations. In this dissertation, I combine powerful optical and structural characterization techniques to investigate the effect of different defects on the carrier dynamics in III-nitride materials for light emitting devices. The results presented herein will enhance the current understanding of the carrier mechanisms in such devices, which will lead to device efficiency improvements. In the first part of this dissertation, the effects of some important types of crystal defects present in III-nitride structures are investigated. Here, two types of defects are studied in two different III-nitride-based light emitting structures. The first defects of interest are V-pit defects in InGaN/GaN multiple quantum well (MQW) blue LEDs, where their contribution to the high-efficiency of such LEDs is discussed. In addition, the effect of these defects on the efficiency droop phenomenon in these LEDs is elucidated. Secondly, the optical effects of grain boundary defects in AlN-rich AlGaN/AlGaN MQWs is studied. In this study, it is shown that grain boundary defects may result in abnormal carrier localization behavior in these deep ultraviolet (UV) structures. While both defects are treated individually, it is evident from these studies that threading dislocation (TD) defects are an underlying contributor to the more undesirable outcomes of the said defects. In the second part, the dissertation reports on the carrier dynamics of III-nitride LED structures grown on emerging substrates—as possible efficiency enhancing techniques—aimed at mitigating the effects of TD defects. Thus, the carrier dynamics of GaN/AlGaN UV MQWs grown, for the first time, on (2̅01) – oriented β-Ga2O

  3. Optical and Temporal Carrier Dynamics Investigations of III-Nitrides for Semiconductor Lighting

    Ajia, Idris A.

    2018-01-01

    In the first part of this dissertation, the effects of some important types of crystal defects present in III-nitride structures are investigated. Here, two types of defects are studied in two different III-nitride-based light emitting structures. The first defects of interest are V-pit defects in InGaN/GaN multiple quantum well (MQW) blue LEDs, where their contribution to the high-efficiency of such LEDs is discussed. In addition, the effect of these defects on the efficiency droop phenomenon in these LEDs is elucidated. Secondly, the optical effects of grain boundary defects in AlN-rich AlGaN/AlGaN MQWs is studied. In this study, it is shown that grain boundary defects may result in abnormal carrier localization behavior in these deep ultraviolet (UV) structures. While both defects are treated individually, it is evident from these studies that threading dislocation (TD) defects are an underlying contributor to the more undesirable outcomes of the said defects. In the second part, the dissertation reports on the carrier dynamics of III-nitride LED structures grown on emerging substrates—as possible efficiency enhancing techniques—aimed at mitigating the effects of TD defects. Thus, the carrier dynamics of GaN/AlGaN UV MQWs grown, for the first time, on (2̅01) – oriented β-Ga2O3 is studied. It is shown to be a candidate substrate for highly efficient vertical UV devices. Finally, results from the carrier dynamics investigation of an AlGaN/AlGaN MQW LED structure homoepitaxially grown on AlN substrate are discussed, where it is shown that its high-efficiency is sustained at high temperatures through the thermal redistribution of carriers to highly efficient recombination sites.

  4. Enhanced optical nonlinearities in the near-infrared using III-nitride heterostructures coupled to metamaterials

    Wolf, Omri; Ma, Xuedan; Brener, Igal; Allerman, Andrew A.; Wendt, Joel R.; Shaner, Eric A.; Song, Alex Y.

    2015-01-01

    We use planar metamaterial resonators to enhance by more than two orders of magnitude the near infrared second harmonic generation obtained from intersubband transitions in III-Nitride heterostructures. The improvement arises from two factors: employing an asymmetric double quantum well design and aligning the resonators' cross-polarized resonances with the intersubband transition energies. The resulting nonlinear metamaterial operates at wavelengths where single photon detection is available, and represents a different class of sources for quantum photonics related phenomena

  5. Fabrication and Optical Recombination in III-Nitride Microstructures and Devices

    Jiang, H. X

    2003-01-01

    ... their optical and optoelectronic properties. By optimizing the epilayer mobilities and optical emission properties, we have produced GaN,Al(x)Ga(1-x)N (x up to 1), In(x)Ga(1-x)N (x<0.3), and In(x)Al( y)Ga(1-x-y...

  6. Phonon and free-charge carrier properties in group-III nitride heterostructures investigated by spectroscopic ellipsometry and optical Hall effect

    Schoeche, Stefan

    The material class of group-III nitrides gained tremendous technological importance for optoelectronic and high-power/high-frequency amplification devices. Tunability of the direct band gap from 0.65 eV (InN) to 6.2 eV (AlN) by alloying, high breakthrough voltages and intrinsic mobilities, as well as the formation of highly mobile 2d electron gases (2DEG) at heterointerfaces make these compounds ideal for many applications. GaN and Ga-rich alloys are well studied and current research is mainly device-oriented. For example, choice and quality of the gate dielectric significantly influence device performance in high-electron mobility transistors (HEMT) which utilize highly mobile 2DEGs at heterointerfaces. Experimental access to the 2DEG channel properties without influence from parasitic currents or contact properties are desirable. In- and Al-rich ternary alloys are less explored than Ga-rich compounds. For InN and In-rich alloys, while many material parameters such as stiffness constants or effective mass values are largely unknown, reliable p-type doping is a major challenge, also because p-type conducting channels are buried within highly conductive n-type material formed at the surface and interfaces preventing electrical characterization. For AlN and high-Al content alloys, doping mechanisms are not understood and reliable fabrication of material with high free-charge carrier (FCC) concentrations was achieved just recently. Difficulties to form ohmic contacts impair electrical measurements and optical characterization is impeded by lack of high-energy excitation sources. In this work, spectroscopic ellipsometry over the wide spectral range from the THz to VUV in combination with optical Hall effect (generalized ellipsometry with applied magnetic field) from THz to MIR are applied in order to investigate the phonon modes and FCC properties in group-III nitride heterostructures. Adequate model descriptions and analysis strategies are introduced which allow

  7. Semipolar III-nitride laser diodes with zinc oxide cladding.

    Myzaferi, Anisa; Reading, Arthur H; Farrell, Robert M; Cohen, Daniel A; Nakamura, Shuji; DenBaars, Steven P

    2017-07-24

    Incorporating transparent conducting oxide (TCO) top cladding layers into III-nitride laser diodes (LDs) improves device design by reducing the growth time and temperature of the p-type layers. We investigate using ZnO instead of ITO as the top cladding TCO of a semipolar (202¯1) III-nitride LD. Numerical modeling indicates that replacing ITO with ZnO reduces the internal loss in a TCO clad LD due to the lower optical absorption in ZnO. Lasing was achieved at 453 nm with a threshold current density of 8.6 kA/cm 2 and a threshold voltage of 10.3 V in a semipolar (202¯1) III-nitride LD with ZnO top cladding.

  8. Transferrable monolithic III-nitride photonic circuit for multifunctional optoelectronics

    Shi, Zheng; Gao, Xumin; Yuan, Jialei; Zhang, Shuai; Jiang, Yan; Zhang, Fenghua; Jiang, Yuan; Zhu, Hongbo; Wang, Yongjin

    2017-12-01

    A monolithic III-nitride photonic circuit with integrated functionalities was implemented by integrating multiple components with different functions into a single chip. In particular, the III-nitride-on-silicon platform is used as it integrates a transmitter, a waveguide, and a receiver into a suspended III-nitride membrane via a wafer-level procedure. Here, a 0.8-mm-diameter suspended device architecture is directly transferred from silicon to a foreign substrate by mechanically breaking the support beams. The transferred InGaN/GaN multiple-quantum-well diode (MQW-diode) exhibits a turn-on voltage of 2.8 V with a dominant electroluminescence peak at 453 nm. The transmitter and receiver share an identical InGaN/GaN MQW structure, and the integrated photonic circuit inherently works for on-chip power monitoring and in-plane visible light communication. The wire-bonded monolithic photonic circuit on glass experimentally demonstrates in-plane data transmission at 120 Mb/s, paving the way for diverse applications in intelligent displays, in-plane light communication, flexible optical sensors, and wearable III-nitride optoelectronics.

  9. The anharmonic phonon decay rate in group-III nitrides

    Srivastava, G P

    2009-01-01

    Measured lifetimes of hot phonons in group-III nitrides have been explained theoretically by considering three-phonon anharmonic interaction processes. The basic ingredients of the theory include full phonon dispersion relations obtained from the application of an adiabatic bond charge model and crystal anharmonic potential within the isotropic elastic continuum model. The role of various decay routes, such as Klemens, Ridley, Vallee-Bogani and Barman-Srivastava channels, in determining the lifetimes of the Raman active zone-centre longitudinal optical (LO) modes in BN (zincblende structure) and A 1 (LO) modes in AlN, GaN and InN (wurtzite structure) has been quantified.

  10. Room-temperature ballistic transport in III-nitride heterostructures.

    Matioli, Elison; Palacios, Tomás

    2015-02-11

    Room-temperature (RT) ballistic transport of electrons is experimentally observed and theoretically investigated in III-nitrides. This has been largely investigated at low temperatures in low band gap III-V materials due to their high electron mobilities. However, their application to RT ballistic devices is limited by their low optical phonon energies, close to KT at 300 K. In addition, the short electron mean-free-path at RT requires nanoscale devices for which surface effects are a limitation in these materials. We explore the unique properties of wide band-gap III-nitride semiconductors to demonstrate RT ballistic devices. A theoretical model is proposed to corroborate experimentally their optical phonon energy of 92 meV, which is ∼4× larger than in other III-V semiconductors. This allows RT ballistic devices operating at larger voltages and currents. An additional model is described to determine experimentally a characteristic dimension for ballistic transport of 188 nm. Another remarkable property is their short carrier depletion at device sidewalls, down to 13 nm, which allows top-down nanofabrication of very narrow ballistic devices. These results open a wealth of new systems and basic transport studies possible at RT.

  11. Mobility in n-doped wurtzite III-Nitrides

    C.G. Rodrigues

    2003-01-01

    Full Text Available A study of the mobility of n-doped wurtzite III-Nitrides is reported. We have determined the nonequilibrium thermodynamic state of the III-Nitrides systems driven far away from equilibrium by a strong electric field in the steady state, which follows after a very fast transient. The dependence of the mobility (which depends on the nonequilibrium thermodynamic state of the sample on the electric field strength is derived, which decreases with the strength of electric field. We analyzed the contributions to the mobility arising out of the different channels of electron scattering, namely, the polar optic, deformation, piezoelectric, interactions with the phonons, and with impurities. The case of n-InN, n-GaN, and n-AlN have been analyzed: as expected the main contribution comes from the polar-optic interactions in these strongly polar semiconductors. The other interactions are in decreasing order, the deformation acoustic, the piezoelectric, and the one due to impurities.

  12. Doping of III-nitride materials

    Pampili, Pietro; Parbrook, Peter J.

    2016-01-01

    In this review paper we will report the current state of research regarding the doping of III-nitride materials and their alloys. GaN is a mature material with both n-type and p-type doping relatively well understood, and while n-GaN is easily achieved, p-type doping requires much more care. There are significant efforts to extend the composition range that can be controllably doped for AlGaInN alloys. This would allow application in shorter and longer wavelength optoelectronics as well as ex...

  13. Selective layer disordering in III-nitrides with a capping layer

    Wierer, Jr., Jonathan J.; Allerman, Andrew A.

    2016-06-14

    Selective layer disordering in a doped III-nitride superlattice can be achieved by depositing a dielectric capping layer on a portion of the surface of the superlattice and annealing the superlattice to induce disorder of the layer interfaces under the uncapped portion and suppress disorder of the interfaces under the capped portion. The method can be used to create devices, such as optical waveguides, light-emitting diodes, photodetectors, solar cells, modulators, laser, and amplifiers.

  14. III-nitrides, 2D transition metal dichalcogenides, and their heterojunctions

    Mishra, Pawan

    2017-04-01

    Group III-nitride materials have attracted great attention for applications in high efficiency electronic and optoelectronics devices such as high electron mobility transistors, light emitting diodes, and laser diodes. On the other hand, group VI transition metal dichalcogenides (TMDs) in the form of MX2 has recently emerged as a novel atomic layered material system with excellent thermoelectric, electronic and optoelectronic properties. Also, the recent investigations reveal that the dissimilar heterojunctions formed by TMDs and III-nitrides provide the route for novel devices in the area of optoelectronic, electronics, and water splitting applications. In addition, integration of III-nitrides and TMDs will enable high density integrated optoelectronic circuits and the development of hybrid integration technologies. In this work, we have demonstrated kinetically controlled growth processes in plasma assisted molecular beam epitaxy (PAMBE) for the III-nitrides and their engineered heterostructures. Techniques such as Ga irradiation and nitrogen plasma exposure has been utilized to implement bulk GaN, InGaN and their heterostructures in PAMBE. For the growth of III-nitride based heterostructures, the in-situ surface stoichiometry monitoring (i-SSM) technique was developed and used for implementing stepped and compositionally graded InGaN-based multiple quantum wells (MQWs). Their optical and microstrain analysis in conjunction with theoretical studies confirmed improvement in the radiative recombination rate of the graded-MQWs as compared to that of stepped-MQWs, owing to the reduced strain in graded-MQWs. Our achievement also includes the realization of the p-type MoS2 by engineering pristine MoS2 layers in PAMBE. Mainly, Ga and nitrogen plasma irradiation on the pristine MoS2 in PAMBE has resulted in the realization of the p-type MoS2. Also, GaN epitaxial thin layers were deposited on MoS2/c-sapphire, WSe2/c-sapphire substrates by PAMBE to study the band

  15. III-Nitride Membranes for Thermal Bio-Sensing and Solar Hydrogen Generation

    Elafandy, Rami Tarek Mahmoud

    2017-09-01

    III-nitride nanostructures have generated tremendous scientific and technological interests in studying and engineering their low dimensional physics phenomena. Among these, 2D planar, free standing III-nitride nanomembranes are unrivalled in their scalability for high yield manufacture and can be mechanically manipulated. Due to the increase in their surface to volume ratio and the manifestation of quantum phenomena, these nanomembranes acquire unique physical properties. Furthermore, III-nitride membranes are chemically stable and biocompatible. Finally, nanomembranes are highly flexible and can follow curvilinear surfaces present in biological systems. However, being free-standing, requires especially new techniques for handling nanometers or micrometers thick membrane devices. Furthermore, effectively transferring these membrane devices to other substrates is not a direct process which requires the use of photoresists, solvents and/or elastomers. Finally, as the membranes are transferred, they need to be properly attached for subsequent device fabrications, which often includes spin coating and rinsing steps. These engineering complications have impeded the development of novel devices based on III-nitride membranes. In this thesis, we demonstrate the versatility of III-nitride membranes where we develop a thermal bio-sensor nanomembrane and solar energy photo-anode membrane. First, we present a novel preparation technique of nanomembranes with new characteristics; having no threading dislocation cores. We then perform optical characterization to reveal changes in their defect densities compared to the bulk crystal. We also study their mechanical properties where we successfully modulate their bandgap emission by 55 meV through various external compressive and tensile strain fields. Furthermore, we characterize the effect of phonon-boundary scattering on their thermal properties where we report a reduction of thermal conductivity from 130 to 9 W/mK. We employ

  16. Electronic Biosensors Based on III-Nitride Semiconductors.

    Kirste, Ronny; Rohrbaugh, Nathaniel; Bryan, Isaac; Bryan, Zachary; Collazo, Ramon; Ivanisevic, Albena

    2015-01-01

    We review recent advances of AlGaN/GaN high-electron-mobility transistor (HEMT)-based electronic biosensors. We discuss properties and fabrication of III-nitride-based biosensors. Because of their superior biocompatibility and aqueous stability, GaN-based devices are ready to be implemented as next-generation biosensors. We review surface properties, cleaning, and passivation as well as different pathways toward functionalization, and critically analyze III-nitride-based biosensors demonstrated in the literature, including those detecting DNA, bacteria, cancer antibodies, and toxins. We also discuss the high potential of these biosensors for monitoring living cardiac, fibroblast, and nerve cells. Finally, we report on current developments of covalent chemical functionalization of III-nitride devices. Our review concludes with a short outlook on future challenges and projected implementation directions of GaN-based HEMT biosensors.

  17. Engineering Strain for Improved III-Nitride Optoelectronic Device Performance

    Van Den Broeck, Dennis Marnix

    Due to growing environmental and economic concerns, renewable energy generation and high-efficiency lighting are becoming even more important in the scientific community. III-Nitride devices have been essential in production of high-brightness light-emitting diodes (LEDs) and are now entering the photovoltaic (PV) realm as the technology advances. InGaN/GaN multiple quantum well LEDs emitting in the blue/green region have emerged as promising candidates for next-generation lighting technologies. Due to the large lattice mismatch between InN and GaN, large electric fields exist within the quantum well layers and result in low rates of radiative recombination, especially for the green spectral region. This is commonly referred to as the "green gap" and results in poor external quantum efficiencies for light-emitting diodes and laser diodes. In order to mitigate the compressive stress of InGaN QWs, a novel growth technique is developed in order to grown thick, strain-relaxed In yGa1-yN templates for 0.08 structure, "semibulk" InGaN templates were achieved with vastly superior crystal and optical properties than bulk InGaN films. These semibulk InGaN templates were then utilized as new templates for multiple quantum well active layers, effectively reducing the compressive strain in the InGaN wells due to the larger lattice constant of the InGaN template with respect to a GaN template. A zero-stress balance method was used in order to realize a strain-balanced multiple quantum well structure, which again showed improved optical characteristics when compared to fully-strain active regions. The semibulk InGaN template was then implemented into "strain-compensated" LED structures, where light emission was achieved with very little leakage current. Discussion of these strain-compensated devices compared to conventional LEDs is detailed.

  18. Methods for improved growth of group III nitride buffer layers

    Melnik, Yurity; Chen, Lu; Kojiri, Hidehiro

    2014-07-15

    Methods are disclosed for growing high crystal quality group III-nitride epitaxial layers with advanced multiple buffer layer techniques. In an embodiment, a method includes forming group III-nitride buffer layers that contain aluminum on suitable substrate in a processing chamber of a hydride vapor phase epitaxy processing system. A hydrogen halide or halogen gas is flowing into the growth zone during deposition of buffer layers to suppress homogeneous particle formation. Some combinations of low temperature buffers that contain aluminum (e.g., AlN, AlGaN) and high temperature buffers that contain aluminum (e.g., AlN, AlGaN) may be used to improve crystal quality and morphology of subsequently grown group III-nitride epitaxial layers. The buffer may be deposited on the substrate, or on the surface of another buffer. The additional buffer layers may be added as interlayers in group III-nitride layers (e.g., GaN, AlGaN, AlN).

  19. Investigation of Emerging Materials for Optoelectronic Devices Based on III-Nitrides

    Muhammed, Mufasila Mumthaz

    2018-03-11

    III-nitride direct bandgap semiconductors have attracted significant research interest due to their outstanding potential for modern optoelectronic and electronic applications. However, the high cost of III-nitride devices, along with low performance due to dislocation defects, remains an obstacle to their further improvement. In this dissertation, I present a significant enhancement of III-nitride devices based on emerging materials. A promising substrate, (-201)-oriented β-Ga2O3 with unique properties that combine high transparency and conductivity, is used for the first time in the development of high-quality vertical III-nitride devices, which can be cost-effective for large-scale production. In addition, hybridizing GaN with emerging materials, mainly perovskite, is shown to extend the functionality of III-nitride applications. As a part of this investigation, high-performance and high-responsivity fast perovskite/GaN-based UV-visible broadband photodetectors were developed. State-of-the-art GaN epilayers grown on (-201)-oriented β-Ga2O3 using AlN and GaN buffer layers are discussed, and their high optical quality without using growth enhancement techniques is demonstrated. In particular, a low lattice mismatch (⁓4.7%) between GaN and the substrate results in a low density of dislocations ~4.8Å~107 cm−2. To demonstrates the effect of (-201)-oriented β-Ga2O3 substrate on the quality of III-nitride alloys, high-quality ternary alloy InxGa1−xN film is studied, followed by the growth of high quality InxGa1−xN/GaN single and multiple quantum wells (QWs). The optical characterization and carrier dynamics by photoluminescence (PL) and time-resolved PL measurements were subsequently performed. Lastly, to investigate the performance of a vertical emitting device based on InGaN/GaN multiple QWs grown on (-201)-oriented β-Ga2O3 substrate, high-efficiency vertical-injection emitting device is developed and extensively investigated. The conductive nature of

  20. III-nitride Photonic Integrated Circuit: Multi-section GaN Laser Diodes for Smart Lighting and Visible Light Communication

    Shen, Chao

    2017-01-01

    The past decade witnessed the rapid development of III-nitride light-emitting diodes (LEDs) and laser diodes (LDs), for smart lighting, visible-light communication (VLC), optical storage, and internet-of-things. Recent studies suggested that the Ga

  1. Enhanced thermaly managed packaging for III-nitride light emitters

    Kudsieh, Nicolas

    In this Dissertation our work on `enhanced thermally managed packaging of high power semiconductor light sources for solid state lighting (SSL)' is presented. The motivation of this research and development is to design thermally high stable cost-efficient packaging of single and multi-chip arrays of III-nitrides wide bandgap semiconductor light sources through mathematical modeling and simulations. Major issues linked with this technology are device overheating which causes serious degradation in their illumination intensity and decrease in the lifetime. In the introduction the basics of III-nitrides WBG semiconductor light emitters are presented along with necessary thermal management of high power cingulated and multi-chip LEDs and laser diodes. This work starts at chip level followed by its extension to fully packaged lighting modules and devices. Different III-nitride structures of multi-quantum well InGaN/GaN and AlGaN/GaN based LEDs and LDs were analyzed using advanced modeling and simulation for different packaging designs and high thermal conductivity materials. Study started with basic surface mounted devices using conventional packaging strategies and was concluded with the latest thermal management of chip-on-plate (COP) method. Newly discovered high thermal conductivity materials have also been incorporated for this work. Our study also presents the new approach of 2D heat spreaders using such materials for SSL and micro LED array packaging. Most of the work has been presented in international conferences proceedings and peer review journals. Some of the latest work has also been submitted to well reputed international journals which are currently been reviewed for publication. .

  2. Prospects of III-nitride optoelectronics grown on Si

    Zhu, D; Wallis, D J; Humphreys, C J

    2013-01-01

    The use of III-nitride-based light-emitting diodes (LEDs) is now widespread in applications such as indicator lamps, display panels, backlighting for liquid-crystal display TVs and computer screens, traffic lights, etc. To meet the huge market demand and lower the manufacturing cost, the LED industry is moving fast from 2 inch to 4 inch and recently to 6 inch wafer sizes. Although Al 2 O 3 (sapphire) and SiC remain the dominant substrate materials for the epitaxy of nitride LEDs, the use of large Si substrates attracts great interest because Si wafers are readily available in large diameters at low cost. In addition, such wafers are compatible with existing processing lines for 6 inch and larger wafers commonly used in the electronics industry. During the last decade, much exciting progress has been achieved in improving the performance of GaN-on-Si devices. In this contribution, the status and prospects of III-nitride optoelectronics grown on Si substrates are reviewed. The issues involved in the growth of GaN-based LED structures on Si and possible solutions are outlined, together with a brief introduction to some novel in situ and ex situ monitoring/characterization tools, which are especially useful for the growth of GaN-on-Si structures. (review article)

  3. Polarity Control in Group-III Nitrides beyond Pragmatism

    Mohn, Stefan; Stolyarchuk, Natalia; Markurt, Toni; Kirste, Ronny; Hoffmann, Marc P.; Collazo, Ramón; Courville, Aimeric; Di Felice, Rosa; Sitar, Zlatko; Vennéguès, Philippe; Albrecht, Martin

    2016-05-01

    Controlling the polarity of polar semiconductors on nonpolar substrates offers a wealth of device concepts in the form of heteropolar junctions. A key to realize such structures is an appropriate buffer-layer design that, in the past, has been developed by empiricism. GaN or ZnO on sapphire are prominent examples for that. Understanding the basic processes that mediate polarity, however, is still an unsolved problem. In this work, we study the structure of buffer layers for group-III nitrides on sapphire by transmission electron microscopy as an example. We show that it is the conversion of the sapphire surface into a rhombohedral aluminum-oxynitride layer that converts the initial N-polar surface to Al polarity. With the various AlxOyNz phases of the pseudobinary Al2O3 -AlN system and their tolerance against intrinsic defects, typical for oxides, a smooth transition between the octahedrally coordinated Al in the sapphire and the tetrahedrally coordinated Al in AlN becomes feasible. Based on these results, we discuss the consequences for achieving either polarity and shed light on widely applied concepts in the field of group-III nitrides like nitridation and low-temperature buffer layers.

  4. Progress in Group III nitride semiconductor electronic devices

    Hao Yue; Zhang Jinfeng; Shen Bo; Liu Xinyu

    2012-01-01

    Recently there has been a rapid domestic development in group III nitride semiconductor electronic materials and devices. This paper reviews the important progress in GaN-based wide bandgap microelectronic materials and devices in the Key Program of the National Natural Science Foundation of China, which focuses on the research of the fundamental physical mechanisms of group III nitride semiconductor electronic materials and devices with the aim to enhance the crystal quality and electric performance of GaN-based electronic materials, develop new GaN heterostructures, and eventually achieve high performance GaN microwave power devices. Some remarkable progresses achieved in the program will be introduced, including those in GaN high electron mobility transistors (HEMTs) and metal—oxide—semiconductor high electron mobility transistors (MOSHEMTs) with novel high-k gate insulators, and material growth, defect analysis and material properties of InAlN/GaN heterostructures and HEMT fabrication, and quantum transport and spintronic properties of GaN-based heterostructures, and high-electric-field electron transport properties of GaN material and GaN Gunn devices used in terahertz sources. (invited papers)

  5. III-Nitride Micro and Nano Structures for Solid State Lightning

    Ben Slimane, Ahmed

    2014-08-01

    Visible light emitting diodes (LEDs) are widely used in daily consumer electronics systems, such as general lighting, displays, communication, sensing, and also biomedical applications. To mitigate the ever increasing technology demand, there are tremendous on-going efforts in improving material properties and micro-fabrication techniques. In general, visible LEDs are environmentally friendly, robust and reliable light emitters with small device footprint, and are capable of delivering high luminous efficacy. Typically, LEDs rely on group-III-nitride materials to generate visible light. One of the techniques to generate white light is to coat blue LEDs with yellow phosphor, or ultraviolet (UV) LEDs with red-green-blue (RGB) phosphor. Other scheme relies on combination of RGB LEDs, where high brightness green and blue LEDs are generally grown on robust sapphire substrate. But the current challenges in high threading dislocation density of III-Nitride materials on sapphire or hetero-substrate, phosphor degradation, and bulk-LED mechanical design constraints imposed by the supporting substrate wafer motivate further scientific investigations into strain-engineering, novel reliable phosphor-semiconductor, color-tuning techniques, and transferrable III-nitride vertical LEDs. The current research presents a significant step towards the utilization of annealed porous GaN as a template for subsequent growth of fully relaxed GaN-based epitaxy materials. In our study, we observed significant compressive strain relaxation of 0.41 ± 0.04 GPa in annealed porous GaN fabricated using UV-assisted electroless etching. Moreover the use of GaN nanoparticles with large wavelength tunability and 10 µm InGaN microstructures with different indium composition ushers a new way of making reliable phosphor for white light generation. We also investigate the epitaxial lift-off of InGaN LED structures by selectively etching unintentionally doped GaN sacrificial buffer layer. High Ga

  6. III-nitride based light emitting diodes and applications

    Han, Jung; Amano, Hiroshi; Morkoç, Hadis

    2017-01-01

    The revised edition of this important book presents updated and expanded coverage of light emitting diodes (LEDs) based on heteroepitaxial GaN on Si substrates, and includes new chapters on tunnel junction LEDs, green/yellow LEDs, and ultraviolet LEDs. Over the last two decades, significant progress has been made in the growth, doping and processing technologies of III-nitride based semiconductors, leading to considerable expectations for nitride semiconductors across a wide range of applications. LEDs are already used in traffic signals, signage lighting, and automotive applications, with the ultimate goal of the global replacement of traditional incandescent and fluorescent lamps, thus reducing energy consumption and cutting down on carbon-dioxide emission. However, some critical issues must be addressed to allow the further improvements required for the large-scale realization of solid-state lighting, and this book aims to provide the readers with details of some contemporary issues on which the performanc...

  7. Anomalous microstructural changes in III-nitrides under ion bombardment

    Kucheyev, S.O.; Williams, J.S.; Jagadish, C.

    2002-01-01

    Full text: Group-III nitrides (GaN, AlGaN, and InGaN) are currently a 'hot topic' in the physics and material research community due to very important technological applications of these materials in (opto)electronics. In the fabrication of III-nitride-based devices, ion bombardment represents a very attractive processing tool. However, ion-beam-produced lattice disorder and its undesirable consequences limit technological applications of ion implantation. Hence, studies of ion-beam-damage processes in Ill-nitrides are not only physically interesting but also technologically important. In this study, wurtzite GaN, AlGaN, and InGaN films exposed to ion bombardment under a wide range of irradiation conditions are studied by a combination of transmission electron microscopy (TEM), environmental scanning electron microscopy (ESEM), energy dispersive x-ray spectrometry (EDS), atomic force microscopy (AFM), cathodoluminescence (CL), and Rutherford backscattering/channeling (RBS/C) spectrometry. Results show that, unlike the situation for mature semiconductors such as Si and GaAs, Ill-nitrides exhibit a range of intriguing behavior involving extreme microstructural changes under ion bombardment. In this presentation, the following aspects are discussed: (i) formation of lattice defects during ion bombardment, (ii) ion-beam-induced phase transformations, (iii) ion-beam-produced stoichiometric imbalance and associated material decomposition, and (iv) an application of charging phenomena during ESEM imaging for studies of electrical isolation in GaN by MeV light ion irradiation. Emphasis is given to the (powerful) application of electron microscopy techniques for the understanding of physical processes occurring in Ill-nitrides under ion bombardment. Copyright (2002) Australian Society for Electron Microscopy Inc

  8. Suspended HfO2 photonic crystal slab on III-nitride/Si platform

    Wang, Yongjin; Feng, Jiao; Cao, Ziping; Zhu, Hongbo

    2014-01-01

    We present here the fabrication of suspended hafnium oxide (HfO 2 ) photonic crystal slab on a III-nitride/Si platform. The calculations are performed to model the suspended HfO 2 photonic crystal slab. Aluminum nitride (AlN) film is employed as the sacrificial layer to form air gap. Photonic crystal patterns are defined by electron beam lithography and transferred into HfO 2 film, and suspended HfO 2 photonic crystal slab is achieved on a III-nitride/Si platform through wet-etching of AlN layer in the alkaline solution. The method is promising for the fabrication of suspended HfO 2 nanostructures incorporating into a III-nitride/Si platform, or acting as the template for epitaxial growth of III-nitride materials. (orig.)

  9. III-nitrides, 2D transition metal dichalcogenides, and their heterojunctions

    Mishra, Pawan

    2017-01-01

    Group III-nitride materials have attracted great attention for applications in high efficiency electronic and optoelectronics devices such as high electron mobility transistors, light emitting diodes, and laser diodes. On the other hand, group VI

  10. Recent Advances on p-Type III-Nitride Nanowires by Molecular Beam Epitaxy

    Songrui Zhao

    2017-09-01

    Full Text Available p-Type doping represents a key step towards III-nitride (InN, GaN, AlN optoelectronic devices. In the past, tremendous efforts have been devoted to obtaining high quality p-type III-nitrides, and extraordinary progress has been made in both materials and device aspects. In this article, we intend to discuss a small portion of these processes, focusing on the molecular beam epitaxy (MBE-grown p-type InN and AlN—two bottleneck material systems that limit the development of III-nitride near-infrared and deep ultraviolet (UV optoelectronic devices. We will show that by using MBE-grown nanowire structures, the long-lasting p-type doping challenges of InN and AlN can be largely addressed. New aspects of MBE growth of III-nitride nanostructures are also discussed.

  11. III-Nitride Membranes for Thermal Bio-Sensing and Solar Hydrogen Generation

    Elafandy, Rami T.

    2017-01-01

    demonstrate the versatility of III-nitride membranes where we develop a thermal bio-sensor nanomembrane and solar energy photo-anode membrane. First, we present a novel preparation technique of nanomembranes with new characteristics; having no threading

  12. The role of In in III-nitride ternary semiconductors

    Redondo cubero, A

    This proposal aims to study the role of In in the outstanding efficiency of luminescent devices based on group III-nitride ternary semiconductors. To study the microscopic environments of In in GaInN and AlInN, Perturbed Angular Correlation (PAC) experiments will be performed using the PAC-probes $^{111m}$Cd($^{111}$Cd), $^{115}$Cd($^{115}$In) and $^{117}$Cd($^{117}$In). Temperature dependent PAC measurements using the $^{111}$In($^{111}$Cd) probe indicated that In in GaN and AlN forms a complex with a defect, possibly a nitrogen vacancy (V$_{N}$), which is stable up to high temperatures and might be involved in the luminescence mechanisms. Analysing these results two questions arose: \\\\ \\\\1. Does the fact that the actual measurement is performed with the daughter nucleus $^{111}$Cd (being an acceptor) influence the probe-defect interaction? This question can be answered by performing measurements with the complementary probe $^{117}$Cd($^{117}$In). \\\\ \\\\ 2. What is the significance of $\\textit{a...

  13. Lattice site location of impurities in group III nitrides using emission channeling

    De Vries, Bart; Wahl, Ulrich

    The group III nitrides comprise the semiconducting materials InN, GaN, AlN and their ternary alloys. During the last decade, GaN has attracted widespread attention due to its large band gap and hardness. These properties, combined with the fact that its band gap can be adjusted by alloying it with InN and AlN, make GaN a suitable material for the fabrication of optical components that operate in the blue to ultraviolet region of the electromagnetic spectrum, and for microwave and high-power applications. Indeed, during the last couple of years, GaN-based blue and violet light-emitting devices (LEDs) and laser diodes have been realized and commercialized: the violet laser diodes will even be the keystone to the next generation of optical data storage standards, Blu-ray and HD-DVD. \\\\ \\\\ A key aspect in device production is the incorporation of dopants that can alter the electronic, magnetic or optical properties of the host material. For example, Si is often used to generate n-type GaN, while Mg is the most fr...

  14. III-Nitride Blue Laser Diode with Photoelectrochemically Etched Current Aperture

    Megalini, Ludovico

    distance. In this dissertation it is presented the first nitride blue edge emitting LD with a photoelectrochemical etched current aperture (CA-LD) into the device active region. Photoelectrochemical etching (PECE) has emerged as a powerful wet etching technique for III-nitride compounds. Beyond the advantages of wet etching technique, PECE offers bandgap selectivity, which is particularly desirable because it allows more freedom in designing new and advanced devices with higher performances. In the first part of this thesis a review of PECE is presented, and it is shown how it can be used to achieve a selective and controllable deep undercut of the active region of LEDs and LDs, in particular the selective PECE of MQW active region of (10-10) m-plane and (20-2-1) plane structures is reported. In the second part of this thesis, the fabrication flow process of the CA-LD is described. The performance of these devices is compared with that of shallow etched ridge LDs with a nominally identical epitaxial structure and active region width and it is experimentally shown that the CA-LD design has superior performance. CW operation of a (20-2-1) CA-LD with a 1.5 microm wide active region is demonstrated. Finally, in the third and last part of this thesis, the CA-LD performance is discussed in more details, in particular, an analysis of optical scattering losses caused by the rough edges of the remnant PEC etched active region is presented.

  15. Nonpolar III-nitride vertical-cavity surface-emitting lasers incorporating an ion implanted aperture

    Leonard, J. T.; Cohen, D. A.; Yonkee, B. P.; Farrell, R. M.; Margalith, T.; Lee, S.; DenBaars, S. P.; Speck, J. S.; Nakamura, S.

    2015-01-01

    © 2015 AIP Publishing LLC. We report on our recent progress in improving the performance of nonpolar III-nitride vertical-cavity surface-emitting lasers (VCSELs) by using an Al ion implanted aperture and employing a multi-layer electron-beam evaporated ITO intracavity contact. The use of an ion implanted aperture improves the lateral confinement over SiNx apertures by enabling a planar ITO design, while the multi-layer ITO contact minimizes scattering losses due to its epitaxially smooth morphology. The reported VCSEL has 10 QWs, with a 3nm quantum well width, 1nm barriers, a 5nm electron-blocking layer, and a 6.95- λ total cavity thickness. These advances yield a single longitudinal mode 406nm nonpolar VCSEL with a low threshold current density (∼16kA/cm2), a peak output power of ∼12μW, and a 100% polarization ratio. The lasing in the current aperture is observed to be spatially non-uniform, which is likely a result of filamentation caused by non-uniform current spreading, lateral optical confinement, contact resistance, and absorption loss.

  16. Nonpolar III-nitride vertical-cavity surface-emitting lasers incorporating an ion implanted aperture

    Leonard, J. T.

    2015-07-06

    © 2015 AIP Publishing LLC. We report on our recent progress in improving the performance of nonpolar III-nitride vertical-cavity surface-emitting lasers (VCSELs) by using an Al ion implanted aperture and employing a multi-layer electron-beam evaporated ITO intracavity contact. The use of an ion implanted aperture improves the lateral confinement over SiNx apertures by enabling a planar ITO design, while the multi-layer ITO contact minimizes scattering losses due to its epitaxially smooth morphology. The reported VCSEL has 10 QWs, with a 3nm quantum well width, 1nm barriers, a 5nm electron-blocking layer, and a 6.95- λ total cavity thickness. These advances yield a single longitudinal mode 406nm nonpolar VCSEL with a low threshold current density (∼16kA/cm2), a peak output power of ∼12μW, and a 100% polarization ratio. The lasing in the current aperture is observed to be spatially non-uniform, which is likely a result of filamentation caused by non-uniform current spreading, lateral optical confinement, contact resistance, and absorption loss.

  17. III-nitrides on oxygen- and zinc-face ZnO substrates

    Namkoong, Gon; Burnham, Shawn; Lee, Kyoung-Keun; Trybus, Elaissa; Doolittle, W. Alan; Losurdo, Maria; Capezzuto, Pio; Bruno, Giovanni; Nemeth, Bill; Nause, Jeff

    2005-01-01

    The characteristics of III-nitrides grown on zinc- and oxygen-face ZnO by plasma-assisted molecular beam epitaxy were investigated. The reflection high-energy electron diffraction pattern indicates formation of a cubic phase at the interface between III-nitride and both Zn- and O-face ZnO. The polarity indicates that Zn-face ZnO leads to a single polarity, while O-face ZnO forms mixed polarity of III-nitrides. Furthermore, by using a vicinal ZnO substrate, the terrace-step growth of GaN was realized with a reduction by two orders of magnitude in the dislocation-related etch pit density to ∼10 8 cm -2 , while a dislocation density of ∼10 10 cm -2 was obtained on the on-axis ZnO substrates

  18. III-nitride integration on ferroelectric materials of lithium niobate by molecular beam epitaxy

    Namkoong, Gon; Lee, Kyoung-Keun; Madison, Shannon M.; Henderson, Walter; Ralph, Stephen E.; Doolittle, W. Alan

    2005-01-01

    Integration of III-nitride electrical devices on the ferroelectric material lithium niobate (LiNbO 3 ) has been demonstrated. As a ferroelectric material, lithium niobate has a polarization which may provide excellent control of the polarity of III-nitrides. However, while high temperature, 1000 deg. C, thermal treatments produce atomically smooth surfaces, improving adhesion of GaN epitaxial layers on lithium niobate, repolarization of the substrate in local domains occurs. These effects result in multi domains of mixed polarization in LiNbO 3 , producing inversion domains in subsequent GaN epilayers. However, it is found that AlN buffer layers suppress inversion domains of III-nitrides. Therefore, two-dimensional electron gases in AlGaN/GaN heterojunction structures are obtained. Herein, the demonstration of the monolithic integration of high power devices with ferroelectric materials presents possibilities to control LiNbO 3 modulators on compact optoelectronic/electronic chips

  19. Method to grow group III-nitrides on copper using passivation layers

    Li, Qiming; Wang, George T; Figiel, Jeffrey T

    2014-06-03

    Group III-nitride epilayers can be grown directly on copper substrates using intermediate passivation layers. For example, single crystalline c-plane GaN can be grown on Cu (110) substrates with MOCVD. The growth relies on a low temperature AlN passivation layer to isolate any alloying reaction between Ga and Cu.

  20. III-Nitride Micro and Nano Structures for Solid State Lightning

    Ben Slimane, Ahmed

    2014-01-01

    efficacy. Typically, LEDs rely on group-III-nitride materials to generate visible light. One of the techniques to generate white light is to coat blue LEDs with yellow phosphor, or ultraviolet (UV) LEDs with red-green-blue (RGB) phosphor. Other scheme

  1. Transparent conducting oxide clad limited area epitaxy semipolar III-nitride laser diodes

    Myzaferi, A.; Reading, A. H.; Cohen, D. A.; Farrell, R. M.; Nakamura, S.; Speck, J. S.; DenBaars, S. P.

    2016-01-01

    The bottom cladding design of semipolar III-nitride laser diodes is limited by stress relaxation via misfit dislocations that form via the glide of pre-existing threading dislocations (TDs), whereas the top cladding is limited by the growth time

  2. Investigation of Emerging Materials for Optoelectronic Devices Based on III-Nitrides

    Mumthaz Muhammed, Mufasila

    2018-01-01

    performance due to dislocation defects, remains an obstacle to their further improvement. In this dissertation, I present a significant enhancement of III-nitride devices based on emerging materials. A promising substrate, (-201)-oriented β-Ga2O3 with unique

  3. Determination of polarization fields in group III-nitride heterostructures by capacitance-voltage-measurements

    Rychetsky, Monir, E-mail: monir.rychetsky@physik.tu-berlin.de; Avinc, Baran; Wernicke, Tim; Bellmann, Konrad; Sulmoni, Luca [Institute of Solid State Physics, Technische Universität Berlin, Berlin (Germany); Koslow, Ingrid; Rass, Jens; Kneissl, Michael [Institute of Solid State Physics, Technische Universität Berlin, Berlin (Germany); Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Berlin (Germany); Hoffmann, Veit; Weyers, Markus [Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Berlin (Germany); Wild, Johannes; Zweck, Josef [Fakultät für Physik, University of Regensburg, Regensburg (Germany); Witzigmann, Bernd [Computational Electronics and Photonics Group and CINSaT, University of Kassel, Kassel (Germany)

    2016-03-07

    The polarization fields in wurtzite group III-nitrides strongly influence the optical properties of InAlGaN-based light emitters, e.g., the electron and hole wave function overlap in quantum wells. In this paper, we propose a new approach to determine these fields by capacitance-voltage measurements (CVM). Sheet charges generated by a change of the microscopic polarization at heterointerfaces influence the charge distribution in PIN junctions and therefore the depletion width and the capacitance. We show that it is possible to determine the strength and direction of the internal fields by comparing the depletion widths of two PIN junctions, one influenced by internal polarization fields and one without as a reference. For comparison, we conducted coupled Poisson/carrier transport simulations on the CVM of the polarization-influenced sample. We also demonstrate the feasibility and limits of the method by determining the fields in GaN/InGaN and GaN/AlGaN double heterostructures on (0001) c-plane grown by metal organic vapor phase epitaxy and compare both evaluation methods. The method yields (−0.50 ± 0.07) MV/cm for In{sub 0.08}Ga{sub 0.92}N/GaN, (0.90 ± 0.13) MV/cm for Al{sub 0.18}Ga{sub 0.82}N/GaN, and (2.0 ± 0.3) MV/cm for Al{sub 0.31}Ga{sub 0.69}N/GaN heterostructures.

  4. III-Nitrides growth and AlGaN/GaN heterostructures on ferroelectric materials

    Lee, Kyoung-Keun; Namkoong, Gon; Madison, Shannon M.; Ralph, Stephen E.; Doolittle, W. Alan; Losurdo, Maria; Bruno, Giovanni; Cho, Hyung Koun

    2007-01-01

    The growth of III-nitrides on the ferroelectric materials lithium niobate (LN) and lithium tantalate (LT) via molecular beam epitaxy (MBE) using rf plasma source has been investigated. We have found that gallium nitride (GaN) epitaxial layers have a crystalline relationship with lithium niobate (tantalate) as follows: (0 0 0 1) GaN || (0 0 0 1) LN (LT) with [10-10] GaN || [11-20] LN (LT). The surface stability of LN and LT substrates has been monitored by in situ spectroscopic ellipsometry in the vacuum chamber. Three different temperature zones have been discerned; surface degas and loss of OH group (100-350 deg. C); surface segregation/accumulation of Li and O-species (400-700 deg. C); surface evaporation of O-species and Li desorption (over 750 deg. C). However, LT shows only surface degassing in the range of 100-800 deg. C. Therefore, congruent LN substrates were chemically unstable at the growth temperature of 550-650 deg. C, and therefore developed an additional phase of Li-deficient lithium niobate (LiNb 3 O 8 ) along with lithium niobate (LiNbO 3 ), confirmed by X-ray diffraction. On the other hand, LT showed better chemical stability at these temperatures, with no additional phase development. The structural quality of GaN epitaxial layers has shown slight improvement on LT substrates over LN substrates, according to X-ray diffraction. Herein, we demonstrate AlGaN/GaN heterostructure devices on ferroelectric materials that will allow future development of multifunctional electrical and optical applications

  5. III-Nitrides growth and AlGaN/GaN heterostructures on ferroelectric materials

    Lee, Kyoung-Keun [Georgia Institute of Technology, School of Electrical and Computer Engineering, 777 Atlantic Dr., Atlanta, GA 30332 (United States); Namkoong, Gon [Old Dominion University, Department of Electrical and Computer Engineering, Norfolk, VA 23529 (United States); Madison, Shannon M. [Georgia Institute of Technology, School of Electrical and Computer Engineering, 777 Atlantic Dr., Atlanta, GA 30332 (United States); Ralph, Stephen E. [Georgia Institute of Technology, School of Electrical and Computer Engineering, 777 Atlantic Dr., Atlanta, GA 30332 (United States); Doolittle, W. Alan [Georgia Institute of Technology, School of Electrical and Computer Engineering, 777 Atlantic Dr., Atlanta, GA 30332 (United States)]. E-mail: alan.doolittle@ece.gatech.edu; Losurdo, Maria [Institute of Inorganic Methodologies and of Plasmas, IMIP-CNR, Department of Chemistry, University of Bari, via Orabona, 4 70126 Bari (Italy); Bruno, Giovanni [Institute of Inorganic Methodologies and of Plasmas, IMIP-CNR, Department of Chemistry, University of Bari, via Orabona, 4 70126 Bari (Italy); Cho, Hyung Koun [Department of Materials Science and Engineering, Sung Kyun Kwan University, Suwon 440-746 (Korea, Republic of)

    2007-06-15

    The growth of III-nitrides on the ferroelectric materials lithium niobate (LN) and lithium tantalate (LT) via molecular beam epitaxy (MBE) using rf plasma source has been investigated. We have found that gallium nitride (GaN) epitaxial layers have a crystalline relationship with lithium niobate (tantalate) as follows: (0 0 0 1) GaN || (0 0 0 1) LN (LT) with [10-10] GaN || [11-20] LN (LT). The surface stability of LN and LT substrates has been monitored by in situ spectroscopic ellipsometry in the vacuum chamber. Three different temperature zones have been discerned; surface degas and loss of OH group (100-350 deg. C); surface segregation/accumulation of Li and O-species (400-700 deg. C); surface evaporation of O-species and Li desorption (over 750 deg. C). However, LT shows only surface degassing in the range of 100-800 deg. C. Therefore, congruent LN substrates were chemically unstable at the growth temperature of 550-650 deg. C, and therefore developed an additional phase of Li-deficient lithium niobate (LiNb{sub 3}O{sub 8}) along with lithium niobate (LiNbO{sub 3}), confirmed by X-ray diffraction. On the other hand, LT showed better chemical stability at these temperatures, with no additional phase development. The structural quality of GaN epitaxial layers has shown slight improvement on LT substrates over LN substrates, according to X-ray diffraction. Herein, we demonstrate AlGaN/GaN heterostructure devices on ferroelectric materials that will allow future development of multifunctional electrical and optical applications.

  6. Stable Solar-Blind Ultraviolet III-Nitride Photocathode for Astronomy Applications

    Bell, Lloyd

    In this effort, we propose to develop a new type of cesium-free photocathode using III- nitride materials (GaN, AlN, and their alloys) to achieve highly efficient, solar blind, and stable ultraviolet (UV) response. Currently, detectors used in UV instruments utilize a photocathode to convert UV photons into electrons that are subsequently detected by microchannel plate or CCD. The performance of these detectors critically depends on the efficiency and stability of their photocathodes. In particular, photocathode instability is responsible for many of the fabrication difficulties commonly experienced with this class of detectors. In recent years, III-nitride (in particular GaN) photocathodes have been demonstrated with very high quantum efficiency (>50%) in parts of UV spectral range; however, these photocathodes still rely on cesiation for activation. The proposed photocathode structure will achieve activation through methods for band structure engineering such as delta- doping and polarization field engineering. Compared to the current state-of-the-art in flight-ready microchannel plate/Cs2Te sealed tubes, photocathodes based on III-nitride materials will increase the quantum efficiency by nearly an order of magnitude and significantly enhance both fabrication yield and reliability, since they will not require cesium or other highly reactive materials for activation. This performance will enable a next-generation UV spectroscopic and imaging mission that is of high scientific priority for NASA. This photocathode uses near-surface band-structure engineering to create a permanently activated surface, with high efficiency and air-stable UV response. We will combine this III-nitride structure with our unique III-nitride processing technology to optimize the efficiency and uniformity of the photocathode. In addition, through our design, growth, and processing techniques, we will extend the application of these photocathodes into far UV for both semitransparent and

  7. Demonstration of a III-nitride vertical-cavity surface-emitting laser with a III-nitride tunnel junction intracavity contact

    Leonard, J. T.; Young, E. C.; Yonkee, B. P.; Cohen, D. A.; Margalith, T.; Speck, J. S.; DenBaars, S. P.; Nakamura, S.

    2015-01-01

    We report on a III-nitride vertical-cavity surface-emitting laser (VCSEL) with a III-nitride tunnel junction (TJ) intracavity contact. The violet nonpolar VCSEL employing the TJ is compared to an equivalent VCSEL with a tin-doped indium oxide (ITO) intracavity contact. The TJ VCSEL shows a threshold current density (J th ) of ∼3.5 kA/cm 2 , compared to the ITO VCSEL J th of 8 kA/cm 2 . The differential efficiency of the TJ VCSEL is also observed to be significantly higher than that of the ITO VCSEL, reaching a peak power of ∼550 μW, compared to ∼80 μW for the ITO VCSEL. Both VCSELs display filamentary lasing in the current aperture, which we believe to be predominantly a result of local variations in contact resistance, which may induce local variations in refractive index and free carrier absorption. Beyond the analyses of the lasing characteristics, we discuss the molecular-beam epitaxy (MBE) regrowth of the TJ, as well as its unexpected performance based on band-diagram simulations. Furthermore, we investigate the intrinsic advantages of using a TJ intracavity contact in a VCSEL using a 1D mode profile analysis to approximate the threshold modal gain and general loss contributions in the TJ and ITO VCSEL

  8. Demonstration of a III-nitride vertical-cavity surface-emitting laser with a III-nitride tunnel junction intracavity contact

    Leonard, J. T., E-mail: jtleona01@gmail.com; Young, E. C.; Yonkee, B. P.; Cohen, D. A.; Margalith, T.; Speck, J. S. [Materials Department, University of California, Santa Barbara, California 93106 (United States); DenBaars, S. P.; Nakamura, S. [Materials Department, University of California, Santa Barbara, California 93106 (United States); Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106 (United States)

    2015-08-31

    We report on a III-nitride vertical-cavity surface-emitting laser (VCSEL) with a III-nitride tunnel junction (TJ) intracavity contact. The violet nonpolar VCSEL employing the TJ is compared to an equivalent VCSEL with a tin-doped indium oxide (ITO) intracavity contact. The TJ VCSEL shows a threshold current density (J{sub th}) of ∼3.5 kA/cm{sup 2}, compared to the ITO VCSEL J{sub th} of 8 kA/cm{sup 2}. The differential efficiency of the TJ VCSEL is also observed to be significantly higher than that of the ITO VCSEL, reaching a peak power of ∼550 μW, compared to ∼80 μW for the ITO VCSEL. Both VCSELs display filamentary lasing in the current aperture, which we believe to be predominantly a result of local variations in contact resistance, which may induce local variations in refractive index and free carrier absorption. Beyond the analyses of the lasing characteristics, we discuss the molecular-beam epitaxy (MBE) regrowth of the TJ, as well as its unexpected performance based on band-diagram simulations. Furthermore, we investigate the intrinsic advantages of using a TJ intracavity contact in a VCSEL using a 1D mode profile analysis to approximate the threshold modal gain and general loss contributions in the TJ and ITO VCSEL.

  9. Enhanced non-radiative energy transfer in hybrid III-nitride structures

    Smith, R. M.; Athanasiou, M.; Bai, J.; Liu, B.; Wang, T.

    2015-01-01

    The effect of surface states has been investigated in hybrid organic/inorganic white light emitting structures that employ high efficiency, nearfield non-radiative energy transfer (NRET) coupling. The structures utilize blue emitting InGaN/GaN multiple quantum well (MQW) nanorod arrays to minimize the separation with a yellow emitting F8BT coating. Surface states due to the exposed III-nitride surfaces of the nanostructures are found to reduce the NRET coupling rate. The surface states are passivated by deposition of a silicon nitride layer on the III-nitride nanorod surface leading to reduced surface recombination. A low thickness surface passivation is shown to increase the NRET coupling rate by 4 times compared to an un-passivated hybrid structure. A model is proposed to explain the increased NRET rate for the passivated hybrid structures based on the reduction in surface electron depletion of the passivated InGaN/GaN MQW nanorods surfaces

  10. Growth, morphology, and structural properties of group-III-nitride nanocolumns and nanodisks

    Calleja, E.; Ristic, J.; Fernandez-Garrido, S.; Sanchez-Garcia, M.A.; Grandal, J.; Cerutti, L.; Trampert, A.; Jahn, U.; Sanchez, G.; Griol, A.; Sanchez, B.

    2007-01-01

    The growth conditions to achieve group-III-nitride nanocolumns and nanocolumnar heterostructures by plasma-assisted molecular beam epitaxy are studied. The evolution of the nanocolumnar morphology with the growth conditions is determined for (Ga,Al)N and (In,Ga)N nanocolumns. The mechanisms behind the nanocolumnar growth under high N-rich conditions are clarified in the sense that no seeding or catalysts are required, as it is the case in the vapour-liquid-solid model that applies to most nanocolumns grown by metal organic chemical vapour deposition, either with group-III nitrides, II-VI or III-V compounds. Some examples of nanocolumnar heterostructures are given, like quantum disks and cylindrical nanocavities. Preliminary results on the growth of arrays of ordered GaN nanocolumns are reported. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  11. Critical thickness for the formation of misfit dislocations originating from prismatic slip in semipolar and nonpolar III-nitride heterostructures

    Smirnov, A. M.; Young, E. C.; Bougrov, V. E.; Speck, J. S.; Romanov, A. E.

    2016-01-01

    We calculate the critical thickness for misfit dislocation (MD) formation in lattice mismatched semipolar and nonpolar III-nitride wurtzite semiconductor layers for the case of MDs originated from prismatic slip (PSMDs). It has been shown

  12. Amber light-emitting diode comprising a group III-nitride nanowire active region

    Wang, George T.; Li, Qiming; Wierer, Jr., Jonathan J.; Koleske, Daniel

    2014-07-22

    A temperature stable (color and efficiency) III-nitride based amber (585 nm) light-emitting diode is based on a novel hybrid nanowire-planar structure. The arrays of GaN nanowires enable radial InGaN/GaN quantum well LED structures with high indium content and high material quality. The high efficiency and temperature stable direct yellow and red phosphor-free emitters enable high efficiency white LEDs based on the RGYB color-mixing approach.

  13. New Tunneling Features in Polar III-Nitride Resonant Tunneling Diodes

    Jimy Encomendero

    2017-10-01

    Full Text Available For the past two decades, repeatable resonant tunneling transport of electrons in III-nitride double barrier heterostructures has remained elusive at room temperature. In this work we theoretically and experimentally study III-nitride double-barrier resonant tunneling diodes (RTDs, the quantum transport characteristics of which exhibit new features that are unexplainable using existing semiconductor theory. The repeatable and robust resonant transport in our devices enables us to track the origin of these features to the broken inversion symmetry in the uniaxial crystal structure, which generates built-in spontaneous and piezoelectric polarization fields. Resonant tunneling transport enabled by the ground state as well as by the first excited state is demonstrated for the first time over a wide temperature window in planar III-nitride RTDs. An analytical transport model for polar resonant tunneling heterostructures is introduced for the first time, showing a good quantitative agreement with experimental data. From this model we realize that tunneling transport is an extremely sensitive measure of the built-in polarization fields. Since such electric fields play a crucial role in the design of electronic and photonic devices, but are difficult to measure, our work provides a completely new method to accurately determine their magnitude for the entire class of polar heterostructures.

  14. Growth of group III nitride films by pulsed electron beam deposition

    Ohta, J.; Sakurada, K.; Shih, F.-Y.; Kobayashi, A.; Fujioka, H.

    2009-01-01

    We have grown group III nitride films on Al 2 O 3 (0 0 0 1), 6H-SiC (0 0 0 1), and ZnO (0001-bar) substrates by pulsed electron beam deposition (PED) for the first time and investigated their characteristics. We found that c-plane AlN and GaN grow epitaxially on these substrates. It has been revealed that the growth of GaN on atomically flat 6H-SiC substrates starts with the three-dimensional mode and eventually changes into the two-dimensional mode. The GaN films exhibited strong near-band-edge emission in their room temperature photoluminescence spectra. We also found that the use of PED allows us to reduce the epitaxial growth temperature for GaN down to 200 deg. C. - Graphical abstract: We have grown group III nitride films by pulsed electron beam deposition (PED) and found that the films of group III nitrides grow epitaxially on 6H-SiC and Al 2 O 3 substrates. We also found that the use of PED allows us to reduce the epitaxial growth temperature for GaN down to 200 deg. C.

  15. Fabrication and structural studies of opal-III nitride nanocomposites

    Davydov, V. Yu; Golubev, V. G.; Kartenko, N. F.; Kurdyukov, D. A.; Pevtsov, A. B.; Sharenkova, N. V.; Brogueira, P.; Schwarz, R.

    2000-12-01

    In this paper, regular three-dimensional systems of GaN, InN and InGaN nanoclusters have been fabricated for the first time in a void sublattice of artificial opal. The opal consisted of 220 nm diameter close packed amorphous silica spheres and had a regular sublattice of voids accessible to filling by other substances. GaN, InN and InGaN were synthesized directly in the opal voids from precursors such as metal salts and nitrogen hydrides. The composites' structures have been characterized using x-ray diffraction, Raman spectroscopy, atomic force microscopy and optical measurements.

  16. III-nitride semiconductors and their modern devices

    2013-01-01

    This book is dedicated to GaN and its alloys AlGaInN (III-V nitrides), semiconductors with intrinsic properties well suited for visible and UV light emission and electronic devices working at high temperature, high frequency, and harsh environments. There has been a rapid growth in the industrial activity relating to GaN, with GaN now ranking at the second position (after Si) among all semiconductors. This is mainly thanks to LEDs, but also to the emergence of lasers and high power and high frequency electronics. GaN-related research activities are also diversifying, ranging from advanced optical sources and single electron devices to physical, chemical, and biological sensors, optical detectors, and energy converters. All recent developments of nitrides and of their technology are gathered here in a single volume, with chapters written by world leaders in the field. This third book of the series edited by B. Gil is complementary to the preceding two, and is expected to offer a modern vision of nitrides and...

  17. Comparison of nonpolar III-nitride vertical-cavity surface-emitting lasers with tunnel junction and ITO intracavity contacts

    Leonard, J. T.

    2016-03-01

    We report on the lasing of III-nitride nonpolar, violet, vertical-cavity surface-emitting lasers (VCSELs) with III-nitride tunnel-junction (TJ) intracavity contacts and ion implanted apertures (IIAs). The TJ VCSELs are compared to similar VCSELs with tin-doped indium oxide (ITO) intracavity contacts. Prior to analyzing device results, we consider the relative advantages of III-nitride TJs for blue and green emitting VCSELs. The TJs are shown to be most advantageous for violet and UV VCSELs, operating near or above the absorption edge for ITO, as they significantly reduce the total internal loss in the cavity. However, for longer wavelength III-nitride VCSELs, TJs primarily offer the advantage of improved cavity design flexibility, allowing one to make the p-side thicker using a thick n-type III-nitride TJ intracavity contact. This offers improved lateral current spreading and lower loss, compare to using ITO and p-GaN, respectively. These aspects are particularly important for achieving high-power CW VCSELs, making TJs the ideal intracavity contact for any III-nitride VCSEL. A brief overview of III-nitride TJ growth methods is also given, highlighting the molecular-beam epitaxy (MBE) technique used here. Following this overview, we compare 12 mu m aperture diameter, violet emitting, TJ and ITO VCSEL experimental results, which demonstrate the significant improvement in differential efficiency and peak power resulting from the reduced loss in the TJ design. Specifically, the TJ VCSEL shows a peak power of similar to 550 mu W with a threshold current density of similar to 3.5 kA/cm(2), while the ITO VCSELs show peak powers of similar to 80 mu W and threshold current densities of similar to 7 kA/cm

  18. Comparison of nonpolar III-nitride vertical-cavity surface-emitting lasers with tunnel junction and ITO intracavity contacts

    Leonard, J. T.; Young, E. C.; Yonkee, B. P.; Cohen, D. A.; Shen, Chao; Margalith, T.; Ng, Tien Khee; Denbaars, S. P.; Ooi, Boon S.; Speck, J. S.; Nakamura, S.

    2016-01-01

    We report on the lasing of III-nitride nonpolar, violet, vertical-cavity surface-emitting lasers (VCSELs) with III-nitride tunnel-junction (TJ) intracavity contacts and ion implanted apertures (IIAs). The TJ VCSELs are compared to similar VCSELs with tin-doped indium oxide (ITO) intracavity contacts. Prior to analyzing device results, we consider the relative advantages of III-nitride TJs for blue and green emitting VCSELs. The TJs are shown to be most advantageous for violet and UV VCSELs, operating near or above the absorption edge for ITO, as they significantly reduce the total internal loss in the cavity. However, for longer wavelength III-nitride VCSELs, TJs primarily offer the advantage of improved cavity design flexibility, allowing one to make the p-side thicker using a thick n-type III-nitride TJ intracavity contact. This offers improved lateral current spreading and lower loss, compare to using ITO and p-GaN, respectively. These aspects are particularly important for achieving high-power CW VCSELs, making TJs the ideal intracavity contact for any III-nitride VCSEL. A brief overview of III-nitride TJ growth methods is also given, highlighting the molecular-beam epitaxy (MBE) technique used here. Following this overview, we compare 12 mu m aperture diameter, violet emitting, TJ and ITO VCSEL experimental results, which demonstrate the significant improvement in differential efficiency and peak power resulting from the reduced loss in the TJ design. Specifically, the TJ VCSEL shows a peak power of similar to 550 mu W with a threshold current density of similar to 3.5 kA/cm(2), while the ITO VCSELs show peak powers of similar to 80 mu W and threshold current densities of similar to 7 kA/cm

  19. Microstructures of group III-nitrides after implantation with gallium

    Kench, P.J.

    2001-05-01

    High doses of gallium have been implanted into layers of aluminium nitride (AIN), indium nitride (InN) and amorphous silicon nitride (a-SiN x ) in an attempt to bond gallium with nitrogen and form binary or ternary alloys. The microstructure of the resultant layers have been characterised using, principally, transmission electron microscopy and X-ray photoelectron spectroscopy. The implantation of a high dose of Ga ions into AIN was successful in synthesising a GaN/GaAlN compound. The resultant layers were largely uniform but contained aluminium precipitates near the surface. These precipitates were pure Al and were most common in the region associated with the maximum Ga concentration. Deconvolution of X-ray photoelectron spectroscopy peaks indicated that Ga existed in a number of chemical states, including the nitride. Electron diffraction patterns from the implanted layers were closely indexed to both AIN and GaN. A further N implant was used to reduce the concentration of the aluminium precipitates and increase the concentration of GaN bonds. The yield of Ga-N bonds dramatically increased and a reduction in the concentration of Al precipitates was observed. Laser and thermal annealing was performed on the implanted AIN substrates. The near surface regions of the implanted specimens appeared to free of precipitates and bubbles. Laser annealing did have a noticeable effect on the electrical and optical properties of the layers. After laser annealing the conductivity of the Ga implanted layer was lower, indicating that the quality of the material had improved. PL measurements showed that a new PL peak at 2.6 eV appeared after laser annealing. It has been found that implanting InN with gallium can yield Ga-N bonds. However, Ga implants into InN were not as successful at synthesising GaN compounds as those by implanting Ga into AIN, due to the low thermal stability of InN. The implanted InN layers were very irregular and contained large indium precipitates and

  20. III-nitride Photonic Integrated Circuit: Multi-section GaN Laser Diodes for Smart Lighting and Visible Light Communication

    Shen, Chao

    2017-04-01

    The past decade witnessed the rapid development of III-nitride light-emitting diodes (LEDs) and laser diodes (LDs), for smart lighting, visible-light communication (VLC), optical storage, and internet-of-things. Recent studies suggested that the GaN-based LDs, which is free from efficiency droop, outperform LEDs as a viable high-power light source. Conventionally, the InGaN-based LDs are grown on polar, c-plane GaN substrates. However, a relatively low differential gain limited the device performance due to a significant polarization field in the active region. Therefore, the LDs grown on nonpolar m-plane and semipolar (2021)-plane GaN substrates are posed to deliver high-efficiency owing to the entirely or partially eliminated polarization field. To date, the smart lighting and VLC functionalities have been demonstrated based on discrete devices, such as LDs, transverse-transmission modulators, and waveguide photodetectors. The integration of III-nitride photonic components, including the light emitter, modulator, absorber, amplifier, and photodetector, towards the realization of III-nitride photonic integrated circuit (PIC) offers the advantages of small-footprint, high-speed, and low power consumption, which has yet to be investigated. This dissertation presents the design, fabrication, and characterization of the multi-section InGaN laser diodes with integrated functionalities on semipolar (2021)-plane GaN substrates for enabling such photonic integration. The blue-emitting integrated waveguide modulator-laser diode (IWM-LD) exhibits a high modulation efficiency of 2.68 dB/V. A large extinction ratio of 11.3 dB is measured in the violet-emitting IWM-LD. Utilizing an integrated absorber, a high optical power (250mW), droop-free, speckle-free, and large modulation bandwidth (560MHz) blue-emitting superluminescent diode is reported. An integrated short-wavelength semiconductor optical amplifier with the laser diode at ~404 nm is demonstrated with a large gain of 5

  1. Theoretical assessment of the electro-optical features of the group III nitrides (B{sub 12}N{sub 12}, Al{sub 12}N{sub 12} and Ga{sub 12}N{sub 12}) and group IV carbides (C{sub 24}, Si{sub 12}C{sub 12} and Ge{sub 12}C{sub 12}) nanoclusters encapsulated with alkali metals (Li, Na and K)

    Tahmasebi, Elham [Chemistry Department, Faculty of Science, Lorestan University, Khorram Abad, Lorestan (Iran, Islamic Republic of); Shakerzadeh, Ehsan, E-mail: e.shakerzadeh@scu.ac.ir [Chemistry Department, Faculty of Science, Shahid Chamran University, Ahvaz (Iran, Islamic Republic of); Biglari, Zeinab [Chemistry Department, Faculty of Science, Lorestan University, Khorram Abad, Lorestan (Iran, Islamic Republic of)

    2016-02-15

    Graphical abstract: - Highlights: • Encapsulation of Li, Na and K narrow the HOMO–LUMO gaps of the clusters. • The group III nitrides nanoclusters strongly interacted with the alkali metals. • First hyperpolarizabilities remarkably enhance for B{sub 12}N{sub 12} encapsulated with Na/K. - Abstract: Density functional theory (DFT) calculations have been carried out to study the influence of alkali metals (Li, Na and K) encapsulation within the group III nitrides (B{sub 12}N{sub 12}, Al{sub 12}N{sub 12} and Ga{sub 12}N{sub 12}) and the group IV carbides (C{sub 24}, Si{sub 12}C{sub 12}and Ge{sub 12}C{sub 12}) nanoclusters. The encapsulation of Li, Na and K atoms is found to narrow the HOMO–LUMO gaps of the considered clusters. The electronic properties of these clusters, especially the group III nitrides nanoclusters, are strongly sensitive to interaction with the alkali metals. Moreover it is observed that the encapsulation of alkali metals enhances the first hyperpolarizabilities of B{sub 12}N{sub 12} nanocluster. Surprisingly, due to the alkali metals encapsulation within B{sub 12}N{sub 12} nanocluster, the first hyperpolarizability values are remarkably increased to 8505.49 and 122,503.76 a.u. for Na@B{sub 12}N{sub 12} and K@B{sub 12}N{sub 12}, respectively. Also the TD-DFT calculations at both CAM-B3LYP/6-311+G(d) and PBE0/6-311+G(d) levels of theory are also performed to investigate the origin of first hyperpolarizabilities.

  2. High-density plasma etching of III-nitrides: Process development, device applications and damage remediation

    Singh, Rajwinder

    Plasma-assisted etching is a key technology for III-nitride device fabrication. The inevitable etch damage resulting from energetic pattern transfer is a challenge that needs to be addressed in order to optimize device performance and reliability. This dissertation focuses on the development of a high-density inductively-coupled plasma (ICP) etch process for III-nitrides, the demonstration of its applicability to practical device fabrication using a custom built ICP reactor, and development of techniques for remediation of etch damage. A chlorine-based standard dry etch process has been developed and utilized in fabrication of a number of electronic and optoelectronic III-nitride devices. Annealing studies carried out at 700°C have yielded the important insight that the annealing time necessary for making good-quality metal contacts to etch processed n-GaN is very short (water, prior to metallization, removes some of the etch damage and is helpful in recovering contact quality. In-situ treatment consisting of a slow ramp-down of rf bias at the end of the etch is found to achieve the same effect as the ex-situ treatment. This insitu technique is significantly advantageous in a large-scale production environment because it eliminates a process step, particularly one involving treatment in hydrochloric acid. ICP equipment customization for scaling up the process to full 2-inch wafer size is described. Results on etching of state of the art 256 x 256 AlGaN focal plane arrays of ultraviolet photodetectors are reported, with excellent etch uniformity over the wafer area.

  3. A Stable, Non-Cesiated III-Nitride Photocathode for Ultraviolet Astronomy Application

    Bell, Lloyd

    In this effort, we propose to develop a new type of cesium-free photocathode using III-nitride (III-N) materials (GaN, AlN, and their alloys) and to achieve highly efficient, solar blind, and stable UV response. Currently, detectors used in UV instruments utilize a photocathode to convert UV photons into electrons that are subsequently detected by microchannel plate or CCD. The performance of these detectors critically depends on the efficiency and stability of their photocathodes. In particular, photocathode instability is responsible for many of the fabrication difficulties commonly experienced with this class of detectors. In recent years, III-N (in particular GaN) photocathodes have been demonstrated with very high QE (>50%) in parts of UV spectral range. Moreover, due to the wide bandgaps of III-nitride materials, photocathode response can be tailored to be intrinsically solar-blind. However, these photocathodes still rely on cesiation for activation, necessitating all-vacuum fabrication and sealed-tube operation. The proposed photocathode structure will achieve activation through methods for band structure engineering such as delta-doping and polarization field engineering. Compared to the current state-of-the-art in flight-ready microchannel plate sealed tubes, photocathodes based on III-N materials will yield high QE and significantly enhance both fabrication yield and reliability, since they do not require cesium or other highly reactive materials for activation. This performance will enable a ~4 meter medium class UV spectroscopic and imaging mission that is of high scientific priority for NASA. This work will build on the success of our previous APRA-funded effort. In that work, we demonstrated III-nitride photocathode operation without the use of cesium and stable response with respect to time. These accomplishments represent major improvements to the state-of-the-art for photocathode technologies. In the proposed effort, we will implement III-nitride

  4. Strain distribution and defect analysis in III-nitrides by dynamical AFM analysis

    Minj, Albert; Cavalcoli, Daniela; Cavallini, Anna; Gamarra, Piero; Di Forte Poisson, Marie-Antoinette

    2013-01-01

    Here, we report on significant material information provided by semi-contact phase-images in a wide range of hard III-nitride surfaces. We show that the phase contrast, which is fundamentally related to the energy dissipation during tip–surface interaction, is sensitive to the crystalline nature of the material and thus could potentially be used to determine the crystalline quality of thin nitride layers. Besides, we found that the structural defects, especially threading dislocations and cracks, act as selective sites where energy mainly dissipates. Consequently, in nitrides defects with very low dimensions can actually be imaged with phase-contrast imaging. (paper)

  5. Transparent conducting oxide clad limited area epitaxy semipolar III-nitride laser diodes

    Myzaferi, A.

    2016-08-11

    The bottom cladding design of semipolar III-nitride laser diodes is limited by stress relaxation via misfit dislocations that form via the glide of pre-existing threading dislocations (TDs), whereas the top cladding is limited by the growth time and temperature of the p-type layers. These design limitations have individually been addressed by using limited area epitaxy (LAE) to block TD glide in n-type AlGaN bottom cladding layers and by using transparent conducting oxide (TCO) top cladding layers to reduce the growth time and temperature of the p-type layers. In addition, a TCO-based top cladding should have significantly lower resistivity than a conventional p-type (Al)GaN top cladding. In this work, LAE and indium-tin-oxide cladding layers are used simultaneously in a (202⎯⎯1) III-nitride laser structure. Lasing was achieved at 446 nm with a threshold current density of 8.5 kA/cm2 and a threshold voltage of 8.4 V.

  6. Half-metallicity and electronic structures for carbon-doped group III-nitrides: Calculated with a modified Becke-Johnson potential

    Fan, Shuai-wei; Wang, Ri-gao; Xu, Pemg

    2016-09-01

    The electronic structures and magnetism for carbon-doped group III-nitrides are investigated by utilizing the first principle method with the modified Becke-Johnson potential. Calculations show that carbon substituting cations (anions) would induce the group III-nitrides to be paramagnetic metals (half-metallic ferromagnets). Single carbon substituting nitrogen could produce 1.00μB magnetic moment. Electronic structures indicate that the carriers-mediated double-exchange interaction plays a crucial role in forming the ferromagnetism. Based on the mean-field theory, the Curie temperature for carbon-doped group III-nitrides would be above the room temperature. Negative chemical pair interactions imply that carbon dopants tend to form clustering distribution in group III-nitrides. The nitrogen vacancy would make the carbon-doped group III-nitrides lose the half-metallic ferromagnetism.

  7. Single Photon Counting UV Solar-Blind Detectors Using Silicon and III-Nitride Materials

    Nikzad, Shouleh; Hoenk, Michael; Jewell, April D.; Hennessy, John J.; Carver, Alexander G.; Jones, Todd J.; Goodsall, Timothy M.; Hamden, Erika T.; Suvarna, Puneet; Bulmer, J.; Shahedipour-Sandvik, F.; Charbon, Edoardo; Padmanabhan, Preethi; Hancock, Bruce; Bell, L. Douglas

    2016-01-01

    Ultraviolet (UV) studies in astronomy, cosmology, planetary studies, biological and medical applications often require precision detection of faint objects and in many cases require photon-counting detection. We present an overview of two approaches for achieving photon counting in the UV. The first approach involves UV enhancement of photon-counting silicon detectors, including electron multiplying charge-coupled devices and avalanche photodiodes. The approach used here employs molecular beam epitaxy for delta doping and superlattice doping for surface passivation and high UV quantum efficiency. Additional UV enhancements include antireflection (AR) and solar-blind UV bandpass coatings prepared by atomic layer deposition. Quantum efficiency (QE) measurements show QE > 50% in the 100–300 nm range for detectors with simple AR coatings, and QE ≅ 80% at ~206 nm has been shown when more complex AR coatings are used. The second approach is based on avalanche photodiodes in III-nitride materials with high QE and intrinsic solar blindness. PMID:27338399

  8. Group III nitride semiconductors for short wavelength light-emitting devices

    Orton, J. W.; Foxon, C. T.

    1998-01-01

    The group III nitrides (AlN, GaN and InN) represent an important trio of semiconductors because of their direct band gaps which span the range 1.95-6.2 eV, including the whole of the visible region and extending well out into the ultraviolet (UV) range. They form a complete series of ternary alloys which, in principle, makes available any band gap within this range and the fact that they also generate efficient luminescence has been the main driving force for their recent technological development. High brightness visible light-emitting diodes (LEDs) are now commercially available, a development which has transformed the market for LED-based full colour displays and which has opened the way to many other applications, such as in traffic lights and efficient low voltage, flat panel white light sources. Continuously operating UV laser diodes have also been demonstrated in the laboratory, exciting tremendous interest for high-density optical storage systems, UV lithography and projection displays. In a remarkably short space of time, the nitrides have therefore caught up with and, in some ways, surpassed the wide band gap II-VI compounds (ZnCdSSe) as materials for short wavelength optoelectronic devices. The purpose of this paper is to review these developments and to provide essential background material in the form of the structural, electronic and optical properties of the nitrides, relevant to these applications. We have been guided by the fact that the devices so far available are based on the binary compound GaN (which is relatively well developed at the present time), together with the ternary alloys AlGaN and InGaN, containing modest amounts of Al or In. We therefore concentrate, to a considerable extent, on the properties of GaN, then introduce those of the alloys as appropriate, emphasizing their use in the formation of the heterostructures employed in devices. The nitrides crystallize preferentially in the hexagonal wurtzite structure and devices have so

  9. Critical thickness for the formation of misfit dislocations originating from prismatic slip in semipolar and nonpolar III-nitride heterostructures

    Smirnov, A. M.

    2016-01-20

    We calculate the critical thickness for misfit dislocation (MD) formation in lattice mismatched semipolar and nonpolar III-nitride wurtzite semiconductor layers for the case of MDs originated from prismatic slip (PSMDs). It has been shown that there is a switch of stress relaxation modes from generation of basal slip originated MDs to PSMDs after the angle between c-axis in wurtzite crystal structure and the direction of semipolar growth reaches a particular value, e.g., ∼70° for Al0.13Ga0.87N/GaN (h0h̄ 1) semipolar heterostructures. This means that for some semipolar growth orientations of III-nitride heterostructures biaxial relaxation of misfit stress can be realized. The results of modeling are compared to experimental data on the onset of plastic relaxation in AlxGa1−xN/GaN heterostructures.

  10. Progress in efficient doping of high aluminum-containing group III-nitrides

    Liang, Y.-H.; Towe, E.

    2018-03-01

    The group III-nitride (InN, GaN, and AlN) class of semiconductors has become one of two that are critical to a number of technologies in modern life—the other being silicon. Light-emitting diodes made from (In,Ga)N, for example, dominate recent innovations in general illumination and signaling. Even though the (In,Ga)N materials system is fairly well established and widely used in advanced devices, challenges continue to impede development of devices that include aluminum-containing nitride films such as (Al,Ga)N. The main difficulty is efficient doping of films with aluminum-rich compositions; the problem is particularly severe for p-type doping, which is essential for Ohmic contacts to bipolar device structures. This review briefly summarizes the fundamental issues related to p-type doping, and then discusses a number of approaches that are being pursued to resolve the doping problem or for circumventing the need for p-type doping. Finally, we discuss an approach to doping under liquid-metal-enabled growth by molecular beam epitaxy. Recent results from a number of groups appear to indicate that p-type doping of nitride films under liquid-metal-enabled growth conditions might offer a solution to the doping problem—at least for materials grown by molecular beam epitaxy.

  11. Direct immobilization and hybridization of DNA on group III nitride semiconductors

    Xu Xiaobin; Jindal, Vibhu; Shahedipour-Sandvik, Fatemeh; Bergkvist, Magnus [College of Nanoscale Science and Engineering, University at Albany (SUNY), 255 Fuller Road, Albany, NY 12203 (United States); Cady, Nathaniel C. [College of Nanoscale Science and Engineering, University at Albany (SUNY), 255 Fuller Road, Albany, NY 12203 (United States)], E-mail: ncady@uamail.albany.edu

    2009-03-15

    A key concern for group III-nitride high electron mobility transistor (HEMT) biosensors is the anchoring of specific capture molecules onto the gate surface. To this end, a direct immobilization strategy was developed to attach single-stranded DNA (ssDNA) to AlGaN surfaces using simple printing techniques without the need for cross-linking agents or complex surface pre-functionalization procedures. Immobilized DNA molecules were stably attached to the AlGaN surfaces and were able to withstand a range of pH and ionic strength conditions. The biological activity of surface-immobilized probe DNA was also retained, as demonstrated by sequence-specific hybridization experiments. Probe hybridization with target ssDNA could be detected by PicoGreen fluorescent dye labeling with a minimum detection limit of 2 nM. These experiments demonstrate a simple and effective immobilization approach for attaching nucleic acids to AlGaN surfaces which can further be used for the development of HEMT-based DNA biosensors.

  12. X-ray diffraction analysis of cubic zincblende III-nitrides

    Frentrup, Martin; Lee, Lok Yi; Sahonta, Suman-Lata; Kappers, Menno J; Massabuau, Fabien; Gupta, Priti; Oliver, Rachel A; Humphreys, Colin J; Wallis, David J

    2017-01-01

    Solving the green gap problem is a key challenge for the development of future LED-based light systems. A promising approach to achieve higher LED efficiencies in the green spectral region is the growth of III-nitrides in the cubic zincblende phase. However, the metastability of zincblende GaN along with the crystal growth process often lead to a phase mixture with the wurtzite phase, high mosaicity, high densities of extended defects and point defects, and strain, which can all impair the performance of light emitting devices. X-ray diffraction (XRD) is the main characterization technique to analyze these device-relevant structural properties, as it is very cheap in comparison to other techniques and enables fast feedback times. In this review, we will describe and apply various XRD techniques to identify the phase purity in predominantly zincblende GaN thin films, to analyze their mosaicity, strain state, and wafer curvature. The different techniques will be illustrated on samples grown by metalorganic vapor phase epitaxy on pieces of 4″ SiC/Si wafers. We will discuss possible issues, which may arise during experimentation, and provide a critical view on the common theories. (topical review)

  13. The Influence of Uranium Content and PVA/U Ratio on Physical Propertiesof PVA-U Gel and Its Oxide

    Damunir; W, Bangun; Indra-Suryawan; Endang-Nawangsih

    2000-01-01

    The influence of uranium content and PVA/U ratio on physical propertiesof PVA-U gel and its oxide has been investigated. Fifty milliliters of uranylnitrate solution containing 100 g U/l was neutralized using 1M NH 4 0H. Thesolution was converted into PVA-U sol by adding 9.18 % PVA while mixed andheated at 80 o C for 20 minutes. In order to find spherical gel, the solsolution was dropped into a 5 M NH 4 0H solution at room temperature. Theshape formed of the gels small spherical, shape of the formed gels werefiltered, washed and heated at 120 o C. After that the gels were calcined at800 o C for 4 hours. The formed U 3 O 8 particles. Under a similar method, theinfluence of uranium content from 150-400 g/l and the influence of PVA/Uratio of 6.5-12.5 % in 100 g U/l were studied. Characterization of the resultwas obtained from physical properties of the gel and its oxide in the form ofdensity using pycnometer, surface area using surface areameter with N 2 asabsorbent and particle size/ shape using a loop and optical microscope. Theexperimental results showed that both uranium content and PVA/U ratioaffected the physical properties of the kernel properties. The best resultoccurred at uranium content of 100 g/l and PVA/U 9.18 %. The resulted gelwith solid content of 89.17 %, density of 3.36 g/l and size of 124 μm. Theresulted oxide U 3 0 8 had density of 7.98 g U/l, surface area of specific of0.449 m 2 /g and grain size of 810 μm. (author)

  14. Group-III nitride based high electron mobility transistor (HEMT) with barrier/spacer layer

    Chavarkar, Prashant; Smorchkova, Ioulia P.; Keller, Stacia; Mishra, Umesh; Walukiewicz, Wladyslaw; Wu, Yifeng

    2005-02-01

    A Group III nitride based high electron mobility transistors (HEMT) is disclosed that provides improved high frequency performance. One embodiment of the HEMT comprises a GaN buffer layer, with an Al.sub.y Ga.sub.1-y N (y=1 or y 1) layer on the GaN buffer layer. An Al.sub.x Ga.sub.1-x N (0.ltoreq.x.ltoreq.0.5) barrier layer on to the Al.sub.y Ga.sub.1-y N layer, opposite the GaN buffer layer, Al.sub.y Ga.sub.1-y N layer having a higher Al concentration than that of the Al.sub.x Ga.sub.1-x N barrier layer. A preferred Al.sub.y Ga.sub.1-y N layer has y=1 or y.about.1 and a preferred Al.sub.x Ga.sub.1-x N barrier layer has 0.ltoreq.x.ltoreq.0.5. A 2DEG forms at the interface between the GaN buffer layer and the Al.sub.y Ga.sub.1-y N layer. Respective source, drain and gate contacts are formed on the Al.sub.x Ga.sub.1-x N barrier layer. The HEMT can also comprising a substrate adjacent to the buffer layer, opposite the Al.sub.y Ga.sub.1-y N layer and a nucleation layer between the Al.sub.x Ga.sub.1-x N buffer layer and the substrate.

  15. Mocvd Growth of Group-III Nitrides on Silicon Carbide: From Thin Films to Atomically Thin Layers

    Al Balushi, Zakaria Y.

    Group-III nitride semiconductors (AlN, GaN, InN and their alloys) are considered one of the most important class of materials for electronic and optoelectronic devices. This is not limited to the blue light-emitting diode (LED) used for efficient solid-state lighting, but other applications as well, such as solar cells, radar and a variety of high frequency power electronics, which are all prime examples of the technological importance of nitride based wide bandgap semiconductors in our daily lives. The goal of this dissertation work was to explore and establish new growth schemes to improve the structural and optical properties of thick to atomically thin films of group-III nitrides grown by metalorganic chemical vapor deposition (MOCVD) on SiC substrates for future novel devices. The first research focus of this dissertation was on the growth of indium gallium nitride (InGaN). This wide bandgap semiconductor has attracted much research attention as an active layer in LEDs and recently as an absorber material for solar cells. InGaN has superior material properties for solar cells due to its wavelength absorption tunability that nearly covers the entire solar spectrum. This can be achieved by controlling the indium content in thick grown material. Thick InGaN films are also of interest as strain reducing based layers for deep-green and red light emitters. The growth of thick films of InGaN is, however, hindered by several combined problems. This includes poor incorporation of indium in alloys, high density of structural and morphological defects, as well as challenges associated with the segregation of indium in thick films. Overcoming some of these material challenges is essential in order integrate thick InGaN films into future optoelectronics. Therefore, this dissertation research investigated the growth mechanism of InGaN layers grown in the N-polar direction by MOCVD as a route to improve the structural and optical properties of thick InGaN films. The growth

  16. Technical Progress Report for "Optical and Electrical Properties of III-Nitrides and Related Materials"

    Jiang, Hongxing

    2008-10-31

    Investigations have been conducted focused on the fundamental material properties of AIN and high AI-content AIGaN alloys and further developed MOCVD growth technologies for obtaining these materials with improved crystalline quality and conductivities.

  17. Characteristics of III-nitride based laser diode employed for short range underwater wireless optical communications

    Xue, Bin; Liu, Zhe; Yang, Jie; Feng, Liangsen; Zhang, Ning; Wang, Junxi; Li, Jinmin

    2018-03-01

    An off-the-shelf green laser diode (LD) was measured to investigate its temperature dependent characteristics. Performance of the device was severely restricted by rising temperature in terms of increasing threshold current and decreasing modulation bandwidth. The observation reveals that dynamic characteristics of the LD is sensitive to temperature. Influence of light attenuation on the modulation bandwidth of the green LD was also studied. The impact of light attenuation on the modulation bandwidth of the LD in short and low turbid water channel was not obvious while slight difference in modulation bandwidth under same injection level was observed between water channel and free space even at short range.

  18. Optimal III-nitride HEMTs: from materials and device design to compact model of the 2DEG charge density

    Li, Kexin; Rakheja, Shaloo

    2017-02-01

    In this paper, we develop a physically motivated compact model of the charge-voltage (Q-V) characteristics in various III-nitride high-electron mobility transistors (HEMTs) operating under highly non-equilibrium transport conditions, i.e. high drain-source current. By solving the coupled Schrödinger-Poisson equation and incorporating the two-dimensional electrostatics in the channel, we obtain the charge at the top-of-the-barrier for various applied terminal voltages. The Q-V model accounts for cutting off of the negative momenta states from the drain terminal under high drain-source bias and when the transmission in the channel is quasi-ballistic. We specifically focus on AlGaN and AlInN as barrier materials and InGaN and GaN as the channel material in the heterostructure. The Q-V model is verified and calibrated against numerical results using the commercial TCAD simulator Sentaurus from Synopsys for a 20-nm channel length III-nitride HEMT. With 10 fitting parameters, most of which have a physical origin and can easily be obtained from numerical or experimental calibration, the compact Q-V model allows us to study the limits and opportunities of III-nitride technology. We also identify optimal material and geometrical parameters of the device that maximize the carrier concentration in the HEMT channel in order to achieve superior RF performance. Additionally, the compact charge model can be easily integrated in a hierarchical circuit simulator, such as Keysight ADS and CADENCE, to facilitate circuit design and optimization of various technology parameters.

  19. Anisotropy of the nitrogen conduction states in the group III nitrides studied by polarized x-ray absorption

    Lawniczak-Jablonska, K.; Liliental-Weber, Z.; Gullikson, E.M.

    1997-01-01

    Group III nitrides (AlN, GaN, and InN) consist of the semiconductors which appear recently as a basic materials for optoelectronic devices active in the visible/ultraviolet spectrum as well as high-temperature and high-power microelectronic devices. However, understanding of the basic physical properties leading to application is still not satisfactory. One of the reasons consists in unsufficient knowledge of the band structure of the considered semiconductors. Several theoretical studies of III-nitrides band structure have been published but relatively few experimental studies have been carried out, particularly with respect to their conduction band structure. This motivated the authors to examine the conduction band structure projected onto p-states of the nitrogen atoms for AlN, GaN and InN. An additional advantage of their studies is the availability of the studied nitrides in two structures, hexagonal (wurtzite) and cubic (zincblende). This offers an opportunity to gain information about the role of the anisotropy of electronic band states in determining various physical properties

  20. Anisotropy of the nitrogen conduction states in the group III nitrides studied by polarized x-ray absorption

    Lawniczak-Jablonska, K. [Lawrence Berkeley National Lab., CA (United States)]|[Institute of Physics, Warsaw (Poland); Liliental-Weber, Z.; Gullikson, E.M. [Lawrence Berkeley National Lab., CA (United States)] [and others

    1997-04-01

    Group III nitrides (AlN, GaN, and InN) consist of the semiconductors which appear recently as a basic materials for optoelectronic devices active in the visible/ultraviolet spectrum as well as high-temperature and high-power microelectronic devices. However, understanding of the basic physical properties leading to application is still not satisfactory. One of the reasons consists in unsufficient knowledge of the band structure of the considered semiconductors. Several theoretical studies of III-nitrides band structure have been published but relatively few experimental studies have been carried out, particularly with respect to their conduction band structure. This motivated the authors to examine the conduction band structure projected onto p-states of the nitrogen atoms for AlN, GaN and InN. An additional advantage of their studies is the availability of the studied nitrides in two structures, hexagonal (wurtzite) and cubic (zincblende). This offers an opportunity to gain information about the role of the anisotropy of electronic band states in determining various physical properties.

  1. Effect of III-nitride polarization on V{sub OC} in p-i-n and MQW solar cells

    Namkoong, Gon; Boland, Patrick; Foe, Kurniawan; Latimer, Kevin [Department of Electrical and Computer Engineering, Old Dominion University, Applied Research Center, 12050 Jefferson Avenue, Newport News, VA 23606 (United States); Bae, Si-Young; Shim, Jae-Phil; Lee, Dong-Seon [School of Information and Communications, Gwangju Institute of Science and Technology, 261 Cheomdan-gwagiro (Oryong-dong), Buk-gu, Gwangju 500-712 (Korea, Republic of); Jeon, Seong-Ran [Korea Photonics Technology Institute, 971-35, Wolchul-dong, Buk-gu, Gwangju, 500-779 (Korea, Republic of); Doolittle, W. Alan [School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA 30332 (United States)

    2011-02-15

    We performed detailed studies of the effect of polarization on III-nitride solar cells. Spontaneous and piezoelectric polarizations were assessed to determine their impacts upon the open circuit voltages (V{sub OC}) in p-i(InGaN)-n and multi-quantum well (MQW) solar cells. We found that the spontaneous polarization in Ga-polar p-i-n solar cells strongly modifies energy band structures and corresponding electric fields in a way that degrades V{sub OC} compared to non-polar p-i-n structures. In contrast, we found that piezoelectric polarization in Ga-polar MQW structures does not have a large influence on V{sub OC} compared to non-polar MQW structures. (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  2. III-nitride disk-in-nanowire 1.2 μm monolithic diode laser on (001)silicon

    Hazari, Arnab

    2015-11-12

    III-nitride nanowirediodeheterostructures with multiple In0.85Ga0.15N disks and graded InGaN mode confining regions were grown by molecular beam epitaxy on (001)Si substrates. The aerial density of the 60 nm nanowires is ∼3 × 1010 cm−2. A radiative recombination lifetime of 1.84 ns in the disks is measured by time-resolved luminescence measurements. Edge-emitting nanowire lasers have been fabricated and characterized. Measured values of Jth, T0, and dg/dn in these devices are 1.24 kA/cm2, 242 K, and 5.6 × 10−17 cm2, respectively. The peak emission is observed at ∼1.2 μm.

  3. Nonpolar III-nitride vertical-cavity surface-emitting laser with a photoelectrochemically etched air-gap aperture

    Leonard, J. T., E-mail: jtleona01@gmail.com; Yonkee, B. P.; Cohen, D. A.; Megalini, L.; Speck, J. S. [Materials Department, University of California, Santa Barbara, California 93106 (United States); Lee, S. [Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106 (United States); DenBaars, S. P.; Nakamura, S. [Materials Department, University of California, Santa Barbara, California 93106 (United States); Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106 (United States)

    2016-01-18

    We demonstrate a III-nitride nonpolar vertical-cavity surface-emitting laser (VCSEL) with a photoelectrochemically (PEC) etched aperture. The PEC lateral undercut etch is used to selectively remove the multi-quantum well (MQW) region outside the aperture area, defined by an opaque metal mask. This PEC aperture (PECA) creates an air-gap in the passive area of the device, allowing one to achieve efficient electrical confinement within the aperture, while simultaneously achieving a large index contrast between core of the device (the MQW within the aperture) and the lateral cladding of the device (the air-gap formed by the PEC etch), leading to strong lateral confinement. Scanning electron microscopy and focused ion-beam analysis is used to investigate the precision of the PEC etch technique in defining the aperture. The fabricated single mode PECA VCSEL shows a threshold current density of ∼22 kA/cm{sup 2} (25 mA), with a peak output power of ∼180 μW, at an emission wavelength of 417 nm. The near-field emission profile shows a clearly defined single linearly polarized (LP) mode profile (LP{sub 12,1}), which is in contrast to the filamentary lasing that is often observed in III-nitride VCSELs. 2D mode profile simulations, carried out using COMSOL, give insight into the different mode profiles that one would expect to be displayed in such a device. The experimentally observed single mode operation is proposed to be predominantly a result of poor current spreading in the device. This non-uniform current spreading results in a higher injected current at the periphery of the aperture, which favors LP modes with high intensities near the edge of the aperture.

  4. An analytic current-voltage model for quasi-ballistic III-nitride high electron mobility transistors

    Li, Kexin; Rakheja, Shaloo

    2018-05-01

    We present an analytic model to describe the DC current-voltage (I-V) relationship in scaled III-nitride high electron mobility transistors (HEMTs) in which transport within the channel is quasi-ballistic in nature. Following Landauer's transport theory and charge calculation based on two-dimensional electrostatics that incorporates negative momenta states from the drain terminal, an analytic expression for current as a function of terminal voltages is developed. The model interprets the non-linearity of access regions in non-self-aligned HEMTs. Effects of Joule heating with temperature-dependent thermal conductivity are incorporated in the model in a self-consistent manner. With a total of 26 input parameters, the analytic model offers reduced empiricism compared to existing GaN HEMT models. To verify the model, experimental I-V data of InAlN/GaN with InGaN back-barrier HEMTs with channel lengths of 42 and 105 nm are considered. Additionally, the model is validated against numerical I-V data obtained from DC hydrodynamic simulations of an unintentionally doped AlGaN-on-GaN HEMT with 50-nm gate length. The model is also verified against pulsed I-V measurements of a 150-nm T-gate GaN HEMT. Excellent agreement between the model and experimental and numerical results for output current, transconductance, and output conductance is demonstrated over a broad range of bias and temperature conditions.

  5. Polarization-induced hole doping in N-polar III-nitride LED grown by metalorganic chemical vapor deposition

    Yan, Long

    2018-05-03

    Polarization-induced doping has been shown to be effective for wide-bandgap III-nitrides. In this work, we demonstrated a significantly enhanced hole concentration via linearly grading an N-polar AlxGa1-xN (x = 0–0.3) layer grown by metal-organic chemical vapor deposition. The hole concentration increased by ∼17 times compared to that of N-polar p-GaN at 300 K. The fitting results of temperature-dependent hole concentration indicated that the holes in the graded p-AlGaN layer comprised both polarization-induced and thermally activated ones. By optimizing the growth conditions, the hole concentration was further increased to 9.0 × 1017 cm−3 in the graded AlGaN layer. The N-polar blue-violet light-emitting device with the graded p-AlGaN shows stronger electroluminescence than the one with the conventional p-GaN. The study indicates the potential of the polarization doping technique in high-performance N-polar light-emitting devices.

  6. Polarization-induced hole doping in N-polar III-nitride LED grown by metalorganic chemical vapor deposition

    Yan, Long; Zhang, Yuantao; Han, Xu; Deng, Gaoqiang; Li, Pengchong; Yu, Ye; Chen, Liang; Li, Xiaohang; Song, Junfeng

    2018-01-01

    Polarization-induced doping has been shown to be effective for wide-bandgap III-nitrides. In this work, we demonstrated a significantly enhanced hole concentration via linearly grading an N-polar AlxGa1-xN (x = 0–0.3) layer grown by metal-organic chemical vapor deposition. The hole concentration increased by ∼17 times compared to that of N-polar p-GaN at 300 K. The fitting results of temperature-dependent hole concentration indicated that the holes in the graded p-AlGaN layer comprised both polarization-induced and thermally activated ones. By optimizing the growth conditions, the hole concentration was further increased to 9.0 × 1017 cm−3 in the graded AlGaN layer. The N-polar blue-violet light-emitting device with the graded p-AlGaN shows stronger electroluminescence than the one with the conventional p-GaN. The study indicates the potential of the polarization doping technique in high-performance N-polar light-emitting devices.

  7. III-nitride disk-in-nanowire 1.2 μm monolithic diode laser on (001)silicon

    Hazari, Arnab; Aiello, Anthony; Bhattacharya, Pallab [Center for Photonics and Multiscale Nanomaterials, Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109 (United States); Ng, Tien-Khee; Ooi, Boon S. [Division of Computer, Electrical and Mathematical Sciences and Engineering, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900 (Saudi Arabia)

    2015-11-09

    III-nitride nanowire diode heterostructures with multiple In{sub 0.85}Ga{sub 0.15}N disks and graded InGaN mode confining regions were grown by molecular beam epitaxy on (001)Si substrates. The aerial density of the 60 nm nanowires is ∼3 × 10{sup 10} cm{sup −2}. A radiative recombination lifetime of 1.84 ns in the disks is measured by time-resolved luminescence measurements. Edge-emitting nanowire lasers have been fabricated and characterized. Measured values of J{sub th}, T{sub 0}, and dg/dn in these devices are 1.24 kA/cm{sup 2}, 242 K, and 5.6 × 10{sup −17} cm{sup 2}, respectively. The peak emission is observed at ∼1.2 μm.

  8. Growth and characterisation of group-III nitride-based nanowires for devices

    Meijers, R J

    2007-08-30

    One of the main goals of this thesis was to get more insight into the mechanisms driving the growth of nitride nanowires by plasma-assisted molecular beam epitaxy (PA-MBE). The influence of the group-III and group-V flux as well as the substrate temperature T{sub sub} has been studied leading to the conclusion that the III-V ratio determines the growth mode. Ga desorption limits the temperature range to grow GaN nanowires and dissociation of InN is the limiting factor for InN nanowire growth. A reduction of the surface diffusivity on polar surfaces under N-rich conditions explains the anisotropic growth. Growth kinetics of the nanowires show that there are two important contributions to the growth. The first is growth by direct impingement and its contribution is independent of the nanowire diameter. The second contribution comes from atoms, which absorb on the substrate or wire sidewalls and diffuse along the sidewalls to the top of the wire, which acts as an effective sink for the adatoms due to a reduced surface mobility on the polar top of the wires. This diffusion channel, which is enhanced at higher T{sub sub}, becomes more significant for smaller wire diameters, because its contribution scales like 1/d. Experiments with an interruption of the growth and sharp interfaces in TEM images of heterostructures show that the suggestion in literature of a droplet-mediated PA-MBE nitride growth has to be discarded. Despite a thin amorphous silicon nitride wetting layer on the substrate surface, both GaN and InN nanowires grow in the wurtzite structure and epitaxially in a one-to-one relation to the Si(111) substrate surface. There is no evidence for cubic phases. TEM images and optical studies display a high crystalline and optical quality of GaN and InN nanowires. The substrate induces some strain in the bottom part of the nanowires, especially in InN due to the lower T{sub sub} than for GaN, which is released without the formation of dislocations. Only some stacking

  9. On the Hole Injection for III-Nitride Based Deep Ultraviolet Light-Emitting Diodes.

    Li, Luping; Zhang, Yonghui; Xu, Shu; Bi, Wengang; Zhang, Zi-Hui; Kuo, Hao-Chung

    2017-10-24

    The hole injection is one of the bottlenecks that strongly hinder the quantum efficiency and the optical power for deep ultraviolet light-emitting diodes (DUV LEDs) with the emission wavelength smaller than 360 nm. The hole injection efficiency for DUV LEDs is co-affected by the p-type ohmic contact, the p-type hole injection layer, the p-type electron blocking layer and the multiple quantum wells. In this report, we review a large diversity of advances that are currently adopted to increase the hole injection efficiency for DUV LEDs. Moreover, by disclosing the underlying device physics, the design strategies that we can follow have also been suggested to improve the hole injection for DUV LEDs.

  10. Determination of lattice parameters, strain state and composition in semipolar III-nitrides using high resolution X-ray diffraction

    Frentrup, Martin, E-mail: frentrup@physik.tu-berlin.de; Wernicke, Tim; Stellmach, Joachim; Kneissl, Michael [Institute of Solid State Physics, Technische Universität Berlin, Hardenbergstr. 36, 10623 Berlin (Germany); Hatui, Nirupam; Bhattacharya, Arnab [Department of Condensed Matter Physics and Materials Science, Tata Institute of Fundamental Research, Homi Bhabha Road, Mumbai 400005 (India)

    2013-12-07

    In group-III-nitride heterostructures with semipolar or nonpolar crystal orientation, anisotropic lattice and thermal mismatch with the buffer or substrate lead to a complex distortion of the unit cells, e.g., by shearing of the lattice. This makes an accurate determination of lattice parameters, composition, and strain state under assumption of the hexagonal symmetry impossible. In this work, we present a procedure to accurately determine the lattice constants, strain state, and composition of semipolar heterostructures using high resolution X-ray diffraction. An analysis of the unit cell distortion shows that four independent lattice parameters are sufficient to describe this distortion. Assuming only small deviations from an ideal hexagonal structure, a linear expression for the interplanar distances d{sub hkl} is derived. It is used to determine the lattice parameters from high resolution X-ray diffraction 2ϑ-ω-scans of multiple on- and off-axis reflections via a weighted least-square fit. The strain and composition of ternary alloys are then evaluated by transforming the elastic parameters (using Hooke's law) from the natural crystal-fixed coordinate system to a layer-based system, given by the in-plane directions and the growth direction. We illustrate our procedure taking an example of (112{sup ¯}2) Al{sub κ}Ga{sub 1−κ}N epilayers with Al-contents over the entire composition range. We separately identify the in-plane and out-of-plane strains and discuss origins for the observed anisotropy.

  11. Atomistic description of large nanostructures based on III-nitride semiconductors

    Molina-Sanchez, Alejandro; Garcia-Cristobal, Alberto; Cantarero, Andres [Instituto de Ciencia de Materiales de la Universidad de Valencia (Spain); Terentjevs, Aleksandrs; Cicero, Giancarlo [Physics and Materials Science and Chemical Engineering Departments, Politecnico di Torino (Italy)

    2010-07-01

    Semiconductor nanocolumns exhibiting a growth without dislocations and high crystalline quality are of great interest in nanotechnology applications. Specifically, InN-based nanocolumns are good candidates to develop multi-junction solar cells due to their small gap, 0.67 eV, and the possibility of alloying with other nitrides (as GaN and AlN) to cover the entire solar spectrum. A proper description of optical properties of the nanostructures described above can start with an atomistic treatment of the electronic structure in order to keep the essential geometry and symmetry of the objects. Unfortunately, the best description realized with ab initio electronic structure software is strongly limited by the nanocolumn diameter to a few nanometers. By using a combination of ab initio and empirical tight-binding methods, we can connect the quality of the first principles calculations (performed with the Espresso code), with the versatility of an empirical approach. Once we have an ab initio quality parameter set for the empirical tight-binding code, we can study larger nanostructures with this approach, reducing the computation time in orders of magnitude.

  12. Development of III-nitride semiconductors by molecular beam epitaxy and cluster beam epitaxy and fabrication of LEDs based on indium gallium nitride MQWs

    Chen, Tai-Chou Papo

    The family of III-Nitrides (the binaries InN, GaN, AIN, and their alloys) is one of the most important classes of semiconductor materials. Of the three, Indium Nitride (InN) and Aluminum Nitride (AIN) have been investigated much less than Gallium Nitride (GaN). However, both of these materials are important for optoelectronic infrared and ultraviolet devices. In particular, since InN was found recently to be a narrow gap semiconductor (Eg=0.7eV), its development should extend the applications of nitride semiconductors to the spectral region appropriate to fiber optics communication and photovoltaic applications. Similarly, the development of AIN should lead to deep UV light emitting diodes (LEDs). The first part of this work addresses the evaluation of structural, optical and transport properties of InN films grown by two different deposition methods. In one method, active nitrogen was produced in the form of nitrogen radicals by a radio frequency (RF) plasma-assisted source. In an alternative method, active nitrogen was produced in the form of clusters containing approximately 2000 nitrogen molecules. These clusters were produced by adiabatic expansion from high stagnation pressure through a narrow nozzle into vacuum. The clusters were singly or doubly ionized with positive charge by electron impact and accelerated up to approximately 20 to 25 KV prior to their disintegration on the substrate. Due to the high local temperature produced during the impact of clusters with the substrate, this method is suitable for the deposition of InN at very low temperatures. The films are auto-doped n-type with carrier concentrations varying from 3 x 1018 to 1020 cm-3 and the electron effective mass of these films was determined to be 0.09m0. The majority of the AIN films was grown by the cluster beam epitaxy method and was doped n- and p- type by incorporating silicon (Si) and magnesium (Mg) during the film deposition. All films were grown under Al-rich conditions at relatively

  13. Direct Growth of III-Nitride Nanowire-Based Yellow Light-Emitting Diode on Amorphous Quartz Using Thin Ti Interlayer

    Prabaswara, Aditya

    2018-02-06

    Consumer electronics have increasingly relied on ultra-thin glass screen due to its transparency, scalability, and cost. In particular, display technology relies on integrating light-emitting diodes with display panel as a source for backlighting. In this study, we undertook the challenge of integrating light emitters onto amorphous quartz by demonstrating the direct growth and fabrication of a III-nitride nanowire-based light-emitting diode. The proof-of-concept device exhibits a low turn-on voltage of 2.6 V, on an amorphous quartz substrate. We achieved ~ 40% transparency across the visible wavelength while maintaining electrical conductivity by employing a TiN/Ti interlayer on quartz as a translucent conducting layer. The nanowire-on-quartz LED emits a broad linewidth spectrum of light centered at true yellow color (~ 590 nm), an important wavelength bridging the green-gap in solid-state lighting technology, with significantly less strain and dislocations compared to conventional planar quantum well nitride structures. Our endeavor highlighted the feasibility of fabricating III-nitride optoelectronic device on a scalable amorphous substrate through facile growth and fabrication steps. For practical demonstration, we demonstrated tunable correlated color temperature white light, leveraging on the broadly tunable nanowire spectral characteristics across red-amber-yellow color regime.

  14. Microwave irradiation-assisted deposition of Ga2O3 on III-nitrides for deep-UV opto-electronics

    Jaiswal, Piyush; Ul Muazzam, Usman; Pratiyush, Anamika Singh; Mohan, Nagaboopathy; Raghavan, Srinivasan; Muralidharan, R.; Shivashankar, S. A.; Nath, Digbijoy N.

    2018-01-01

    We report on the deposition of Ga2O3 on III-nitride epi-layers using the microwave irradiation technique. We also report on the demonstration of a Ga2O3 device: a visible-blind, deep-UV detector, with a GaN-based heterostructure as the substrate. The film deposited in the solution medium, at <200 °C, using a metalorganic precursor, was nanocrystalline. XRD confirms that the as-deposited film, when annealed at high temperature, turns to polycrystalline β-Ga2O3. SEM shows the as-deposited film to be uniform, with a surface roughness of 4-5 nm, as revealed by AFM. Interdigitated metal-semiconductor-metal devices with Ni/Au contact exhibited a peak spectral response at 230 nm and a good visible rejection ratio. This demonstration of a deep-UV detector on the β-Ga2O3/III-nitride stack is expected to open up possibilities of functional and physical integration of β-Ga2O3 and GaN material families towards enabling next-generation high-performance devices by exciting band and heterostructure engineering.

  15. Electronic properties of III-nitride semiconductors: A first-principles investigation using the Tran-Blaha modified Becke-Johnson potential

    Araujo, Rafael B.; Almeida, J. S. de; Ferreira da Silva, A.

    2013-01-01

    In this work, we use density functional theory to investigate the influence of semilocal exchange and correlation effects on the electronic properties of III-nitride semiconductors considering zinc-blende and wurtzite crystal structures. We find that the inclusion of such effects through the use of the Tran-Blaha modified Becke-Johnson potential yields an excellent description of the electronic structures of these materials giving energy band gaps which are systematically larger than the ones obtained with standard functionals such as the generalized gradient approximation. The discrepancy between the experimental and theoretical band gaps is then significantly reduced with semilocal exchange and correlation effects. However, the effective masses are overestimated in the zinc-blende nitrides, but no systematic trend is found in the wurtzite compounds. New results for energy band gaps and effective masses of zinc-blende and wurtzite indium nitrides are presented

  16. Nondestructive mapping of chemical composition and structural qualities of group III-nitride nanowires using submicron beam synchrotron-based X-ray diffraction

    Bonanno, P.L., E-mail: plb2@njit.edu [Georgia Institute of Technology/GTL, UMI 2958 Georgia Tech-CNRS, 57070 Metz (France); Gautier, S. [LMOPS + UMI: Laboratoire Matériaux Optiques, Photonique et micro-nano Systèmes, UMR CNRS 7132, Université de Metz et SUPELEC, 2 rue E. Belin, 57070 Metz, France, UMI 2958 Georgia Tech-CNRS, 57070 Metz (France); Gmili, Y.El.; Moudakir, T. [UMI 2958 Georgia Tech-CNRS, 57070 Metz (France); Sirenko, A.A. [Department of Physics, New Jersey Institute of Technology, Newark, NJ 07102 (United States); Kazimirov, A. [Cornell High Energy Synchrotron Source (CHESS), Cornell University, Ithaca, NY 14853 (United States); Cai, Z.-H. [Advanced Photon Source, 9700 S. Cass Avenue, Argonne, IL 60439 (United States); Martin, J. [LMOPS + UMI: Laboratoire Matériaux Optiques, Photonique et micro-nano Systèmes, UMR CNRS 7132, Université de Metz et SUPELEC, 2 rue E. Belin, 57070 Metz, France, UMI 2958 Georgia Tech-CNRS, 57070 Metz (France); Goh, W.H. [Georgia Institute of Technology/GTL, UMI 2958 Georgia Tech-CNRS, 57070 Metz (France); Martinez, A.; Ramdane, A.; Le Gratiet, L. [Laboratoire de Photonique et de Nanostructures, UPR CNRS 20, Route de Nozay, 91460 Marcoussis (France); Maloufi, N. [Laboratoire d' Etude des Textures et Application aux Matériaux UMR CNRS 7078 Ile du Saulcy 57045 METZ cedex 1 (France); Assouar, M.B. [Laboratoire de Physique des Milieux Ionisés et Applications, Nancy University, CNRS, BP 239, F-54506 Vandoeuvre-lès-Nancy Cédex (France); Ougazzaden, A. [Georgia Institute of Technology/GTL, UMI 2958 Georgia Tech-CNRS, 57070 Metz (France)

    2013-08-31

    Submicron beam synchrotron-based X-ray diffraction (XRD) techniques have been developed and used to accurately and nondestructively map chemical composition and material quality of selectively grown group III-nitride nanowires. GaN, AlGaN, and InGaN multi-quantum-well nanowires have been selectively grown on lattice matched and mismatched substrates, and the challenges associated with obtaining and interpreting submicron beam XRD results are addressed and solved. Nanoscale cathodoluminescence is used to examine exciton behavior, and energy-dispersive X-ray spectroscopy is used to verify chemical composition. Scanning transmission electron microscopy is later used to paint a more complete picture. The advantages of submicron beam XRD over other techniques are discussed in the context of this challenging material system. - Highlights: ► We used nano selective area growth to create nanowires of GaN, AlGaN and InGaN/GaN. ► We characterized them by synchrotron-based submicron beam X-ray diffraction (XRD). ► This technique accurately determined chemical and crystallographic properties. ► Challenges of XRD are addressed in the context of this challenging material system. ► Advantages of XRD over other characterization methods are discussed.

  17. Semipolar (202̅1) III-Nitride P-Down LEDs with in situ anneal to reduce the Mg memory effect

    Forman, C.; Leonard, J.; Yonkee, B.; Pynn, C.; Mates, T.; Cohen, D.; Farrell, R.; Margalith, T.; DenBaars, S.; Speck, J.; Nakamura, S.

    2017-04-01

    P-down LEDs (PDLEDs) have the potential to open up new design schemes for III-nitride LEDs compared to conventional n-down LEDs (NDLEDs). For light emitters operating above 480 nm, the PDLED design enables the epitaxial advantages of semipolar (202̅1) and gains the polarization benefits of semipolar (202̅1̅). Here, we investigated semipolar (202̅1) InGaN-based PDLEDs in terms of their photoluminescence (PL) spectra and compositional profile. Despite concerns of the Mg memory effect degrading PDLED performance due to Mg-related non-radiative recombination centers, the PL intensities were nearly identical between the NDLED and PDLEDs, which emitted at wavelengths centered near 500 nm. Secondary ion mass spectrometry revealed that the Mg doping levels in the multiple quantum well (MQW) active region were comparable for each structure, with average values of 2.9×1018 cm-3 for the NDLED and 1.8×1018 cm-3 for the PDLED. Prior to growing the active region MQW, a 700 °C in situ anneal was carried out to reduce the average Mg concentration in the PDLED MQW to 3.7×1017 cm-3. Its hydrogen concentration remained at 5×1019 cm-3 in the p-type GaN region, which suggests that hydrogen passivation occurs during the growth of subsequent epitaxial layers in ammonia.

  18. Zr{sub 2}N{sub 2}Se. The first zirconium(IV) nitride selenide by the oxidation of zirconium(III) nitride with selenium

    Lissner, Falk; Hack, Bettina; Schleid, Thomas [Institute for Inorganic Chemistry, University of Stuttgart (Germany); Lerch, Martin [Institute for Chemistry, Technical University of Berlin (Germany)

    2012-08-15

    The oxidation of zirconium(III) nitride (ZrN) with suitable amounts of selenium (Se) in the presence of sodium chloride (NaCl) as flux yields small yellow brownish platelets of the first zirconium(IV) nitride selenide with the composition Zr{sub 2}N{sub 2}Se. The new compound crystallizes in the hexagonal space group P6{sub 3}/mmc (no. 194) with a = 363.98(2) pm, c = 1316.41(9) pm (c/a = 3.617) and two formula units per unit cell. The crystallographically unique Zr{sup 4+} cations are surrounded by three selenide and four nitride anions in the shape of a capped trigonal antiprism. The Se{sup 2-} anions are coordinated by six Zr{sup 4+} cations as trigonal prism and the N{sup 3-} anions reside in tetrahedral surrounding of Zr{sup 4+} cations. These [NZr{sub 4}]{sup 13+} tetrahedra become interconnected via three edges each to form {sup 2}{sub ∞}{[(NZr_4_/_4)_2]"2"+} double layers parallel to the (001) plane, which are held together by monolayers of Se{sup 2-} anions. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  19. Strain-effect transistors: Theoretical study on the effects of external strain on III-nitride high-electron-mobility transistors on flexible substrates

    Shervin, Shahab; Asadirad, Mojtaba [Department of Mechanical Engineering, University of Houston, Houston, Texas 77204-4006 (United States); Materials Science and Engineering Program, University of Houston, Houston, Texas 77204 (United States); Kim, Seung-Hwan; Ravipati, Srikanth; Lee, Keon-Hwa [Department of Mechanical Engineering, University of Houston, Houston, Texas 77204-4006 (United States); Bulashevich, Kirill [STR Group, Inc., Engels av. 27, P.O. Box 89, 194156, St. Petersburg (Russian Federation); Ryou, Jae-Hyun, E-mail: jryou@uh.edu [Department of Mechanical Engineering, University of Houston, Houston, Texas 77204-4006 (United States); Materials Science and Engineering Program, University of Houston, Houston, Texas 77204 (United States); Texas Center for Superconductivity at the University of Houston (TcSUH), University of Houston, Houston, Texas 77204 (United States)

    2015-11-09

    This paper presents strain-effect transistors (SETs) based on flexible III-nitride high-electron-mobility transistors (HEMTs) through theoretical calculations. We show that the electronic band structures of InAlGaN/GaN thin-film heterostructures on flexible substrates can be modified by external bending with a high degree of freedom using polarization properties of the polar semiconductor materials. Transfer characteristics of the HEMT devices, including threshold voltage and transconductance, are controlled by varied external strain. Equilibrium 2-dimensional electron gas (2DEG) is enhanced with applied tensile strain by bending the flexible structure with the concave-side down (bend-down condition). 2DEG density is reduced and eventually depleted with increasing compressive strain in bend-up conditions. The operation mode of different HEMT structures changes from depletion- to enchantment-mode or vice versa depending on the type and magnitude of external strain. The results suggest that the operation modes and transfer characteristics of HEMTs can be engineered with an optimum external bending strain applied in the device structure, which is expected to be beneficial for both radio frequency and switching applications. In addition, we show that drain currents of transistors based on flexible InAlGaN/GaN can be modulated only by external strain without applying electric field in the gate. The channel conductivity modulation that is obtained by only external strain proposes an extended functional device, gate-free SETs, which can be used in electro-mechanical applications.

  20. Performance analysis of nanodisk and core/shell/shell-nanowire type III-Nitride heterojunction solar cell for efficient energy harvesting

    Routray, S. R.; Lenka, T. R.

    2017-11-01

    Now-a-days III-Nitride nanowires with axial (nanodisk) and radial (core/shell/shell-nanowire) junctions are two unique and potential methods for solar energy harvesting adopted by worldwide researchers. In this paper, polarization behavior of GaN/InGaN/GaN junction and its effect on carrier dynamics of nanodisk and CSS-nanowire type solar cells are intensively studied and compared with its planar counterpart by numerical simulations using commercially available Victory TCAD. It is observed that CSS-NW with hexagonal geometrical shapes are robust to detrimental impact of polarization charges and could be good enough to accelerate carrier collection efficiency as compared to nanodisk and planar solar cells. This numerical study provides an innovative aspect of fundamental device physics with respect to polarization charges in CSS-NW and nanodisk type junction towards photovoltaic applications. The internal quantum efficiencies (IQE) are also discussed to evaluate carrier collection mechanisms and recombination losses in each type of junctions of solar cell. Finally, it is interesting to observe a maximum conversion efficiency of 6.46% with 91.6% fill factor from n-GaN/i-In0.1Ga0.9N/p-GaN CSS-nanowire solar cell with an optimized thickness of 180 nm InGaN layer under one Sun AM1.5 illumination.

  1. Structure and electronic properties of InN and In-rich group III-nitride alloys

    Walukiewicz, W; III, J W Ager; Yu, K M; Liliental-Weber, Z; Wu, J; Li, S X; Jones, R E; Denlinger, J D

    2006-01-01

    The experimental study of InN and In-rich InGaN by a number of structural, optical and electrical methods is reviewed. Recent advances in thin film growth have produced single crystal epitaxial layers of InN which are similar in structural quality to GaN films made under similar conditions and which can have electron concentrations below 1 x 10 18 cm -3 and mobilities exceeding 2000 cm 2 (Vs) -1 . Optical absorption, photoluminescence, photo-modulated reflectance and soft x-ray spectroscopy measurements were used to establish that the room temperature band gap of InN is 0.67 ± 0.05 eV. Experimental measurements of the electron effective mass in InN are presented and interpreted in terms of a non-parabolic conduction band caused by the k · p interaction across the narrow gap. Energetic particle irradiation is shown to be an effective method to control the electron concentration, n, in undoped InN. Optical studies of irradiated InN reveal a large Burstein-Moss shift of the absorption edge with increasing n. Fundamental studies of the energy levels of defects in InN and of electron transport are also reviewed. Finally, the current experimental evidence for p-type activity in Mg-doped InN is evaluated. (topical review)

  2. Microscopic Optical Characterization of Free Standing III-Nitride Substrates, ZnO Bulk Crystals, and III-V Structures for Non-Linear Optics

    2013-03-01

    de la Materia Condensada Paseo de Belen 1 Valladolid, Spain 47011 EOARD Grant 10-3101 Report Date: March 2013 Final Report for 15...NUMBER 7. PERFORMING ORGANIZATION NAME(S) AND ADDRESS(ES) Fundacion General de la Universidad de Valladolid GdS OptronLab Física de la Materia ...GdS OptronLab Física de la Materia Condensada Edificio de i+d Paseo de Belen 1 47011 Valladolid, Spain jimenez@fmc.ua.es

  3. Auger Recombination in III-Nitride Nanowires and Its Effect on Nanowire Light-Emitting Diode Characteristics

    Guo, Wei; Zhang, Meng; Bhattacharya, Pallab; Heo, Junseok

    2011-01-01

    We have measured the Auger recombination coefficients in defect-free InGaN nanowires (NW) and InGaN/GaN dot-in-nanowire (DNW) samples grown on (001) silicon by plasma-assisted molecular beam epitaxy. The nanowires have a density of ∼1×1011 cm-2 and exhibit photoluminescence emission peak at λ ∼ 500 nm. The Auger coefficients as a function of excitation power have been derived from excitation dependent and time-resolved photoluminescence measurements over a wide range of optical excitation power density. The values of C0, defined as the Auger coefficient at low excitation, are 6.1 × 10-32 and 4.1×10-33 cm6·s-1 in the NW and DNW samples, respectively, which are in reasonably good agreement with theoretical predictions for InGaN alloy semiconductors. Light-emitting diodes made with the NW and DNW samples exhibit no efficiency droop up to an injection current density of 400 A/cm 2. © 2011 American Chemical Society.

  4. Auger Recombination in III-Nitride Nanowires and Its Effect on Nanowire Light-Emitting Diode Characteristics

    Guo, Wei

    2011-04-13

    We have measured the Auger recombination coefficients in defect-free InGaN nanowires (NW) and InGaN/GaN dot-in-nanowire (DNW) samples grown on (001) silicon by plasma-assisted molecular beam epitaxy. The nanowires have a density of ∼1×1011 cm-2 and exhibit photoluminescence emission peak at λ ∼ 500 nm. The Auger coefficients as a function of excitation power have been derived from excitation dependent and time-resolved photoluminescence measurements over a wide range of optical excitation power density. The values of C0, defined as the Auger coefficient at low excitation, are 6.1 × 10-32 and 4.1×10-33 cm6·s-1 in the NW and DNW samples, respectively, which are in reasonably good agreement with theoretical predictions for InGaN alloy semiconductors. Light-emitting diodes made with the NW and DNW samples exhibit no efficiency droop up to an injection current density of 400 A/cm 2. © 2011 American Chemical Society.

  5. Evidence of Type-II Band Alignment in III-nitride Semiconductors: Experimental and theoretical investigation for In0.17Al0.83N/GaN heterostructures

    Wang, Jiaming; Xu, Fujun; Zhang, Xia; An, Wei; Li, Xin-Zheng; Song, Jie; Ge, Weikun; Tian, Guangshan; Lu, Jing; Wang, Xinqiang; Tang, Ning; Yang, Zhijian; Li, Wei; Wang, Weiying; Jin, Peng; Chen, Yonghai; Shen, Bo

    2014-01-01

    Type-II band alignment structure is coveted in the design of photovoltaic devices and detectors, since it is beneficial for the transport of photogenerated carriers. Regrettably, for group-III-nitride wide bandgap semiconductors, all existing devices are limited to type-I heterostructures, owing to the unavailable of type-II ones. This seriously restricts the designing flexibility for optoelectronic devices and consequently the relevant performance of this material system. Here we show a brandnew type-II band alignment of the lattice-matched In0.17Al0.83N/GaN heterostructure from the perspective of both experimental observations and first-principle theoretical calculations. The band discontinuity is dominated by the conduction band offset ΔEC, with a small contribution from the valence band offset ΔEV which equals 0.1 eV (with being above). Our work may open up new prospects to realize high-performance III-Nitrides optoelectronic devices based on type-II energy band engineering. PMID:25283334

  6. An investigation on microstructure and mechanical propertiesof a Nb-microalloyed nano/ultrafine grained 201 austenitic stainless steel

    Samaei Baghbadorani, H., E-mail: h.samaeibaghbadorani@ma.iut.ac.ir [Department of Materials Engineering, Isfahan University of Technology, 84156-83111 Isfahan (Iran, Islamic Republic of); Kermanpur, A. [Department of Materials Engineering, Isfahan University of Technology, 84156-83111 Isfahan (Iran, Islamic Republic of); Najafizadeh, A. [Department of Materials Engineering, Isfahan University of Technology, 84156-83111 Isfahan (Iran, Islamic Republic of); Fould Institute of Technology, Fouldshare 84916-63763 (Iran, Islamic Republic of); Behjati, P.; Rezaee, A.; Moallemi, M. [Department of Materials Engineering, Isfahan University of Technology, 84156-83111 Isfahan (Iran, Islamic Republic of)

    2015-06-11

    The present study was aimed to investigate the mechanical properties of a nano/ultrafine grained Nb-containing 201 austenitic stainless steel. For this purpose, 90% cold rolled sheets with fully martensitic microstructure were isothermally annealed at 900 °C for different times of 1 to 1800 s, leading to the reversion of strain- induced α′-martensite to austenite and significant grain refinement. Ferritescopy, X-ray diffractometery and optical/electron microscopy techniques along with hardness measurements and tensile tests were used to study the evolution in microstructure and mechanical properties in the course of annealing. It was found that heavy cold-rolling promoted formation of Nb-rich carbonitrides which effectively retarded the growth of fine reverted austenite grains. The obtained results showed that the complete transformation of martensite to austenite took about 60 s with the corresponding austenite grain size of about 90 nm. This sample had an ultrahigh yield strength of 1170 MPa, which was almost four times higher than that of the raw material and outstanding elongation of 37%. Further, the true stress–strain curves of the reversion annealed samples revealed two distinct uniform elongation stages (stage I and stage II), whereas, the onset of stage II was concurrent with pronounced strain hardening. This was related to the sharp increase in the formation of α′-martensite upon tensile straining.

  7. High-quality III-nitride films on conductive, transparent (2̅01)-oriented β-Ga2O3 using a GaN buffer layer

    Mumthaz Muhammed, Mufasila

    2016-07-14

    We demonstrate the high structural and optical properties of InxGa1−xN epilayers (0 ≤ x ≤ 23) grown on conductive and transparent (01)-oriented β-Ga2O3 substrates using a low-temperature GaN buffer layer rather than AlN buffer layer, which enhances the quality and stability of the crystals compared to those grown on (100)-oriented β-Ga2O3. Raman maps show that the 2″ wafer is relaxed and uniform. Transmission electron microscopy (TEM) reveals that the dislocation density reduces considerably (~4.8 × 107 cm−2) at the grain centers. High-resolution TEM analysis demonstrates that most dislocations emerge at an angle with respect to the c-axis, whereas dislocations of the opposite phase form a loop and annihilate each other. The dislocation behavior is due to irregular (01) β-Ga2O3 surface at the interface and distorted buffer layer, followed by relaxed GaN epilayer. Photoluminescence results confirm high optical quality and time-resolved spectroscopy shows that the recombination is governed by bound excitons. We find that a low root-mean-square average (≤1.5 nm) of InxGa1−xN epilayers can be achieved with high optical quality of InxGa1−xN epilayers. We reveal that (01)-oriented β-Ga2O3 substrate has a strong potential for use in large-scale high-quality vertical light emitting device design.

  8. High-quality III-nitride films on conductive, transparent (2̅01)-oriented β-Ga2O3 using a GaN buffer layer.

    Muhammed, M M; Roldan, M A; Yamashita, Y; Sahonta, S-L; Ajia, I A; Iizuka, K; Kuramata, A; Humphreys, C J; Roqan, I S

    2016-07-14

    We demonstrate the high structural and optical properties of InxGa1-xN epilayers (0 ≤ x ≤ 23) grown on conductive and transparent (01)-oriented β-Ga2O3 substrates using a low-temperature GaN buffer layer rather than AlN buffer layer, which enhances the quality and stability of the crystals compared to those grown on (100)-oriented β-Ga2O3. Raman maps show that the 2″ wafer is relaxed and uniform. Transmission electron microscopy (TEM) reveals that the dislocation density reduces considerably (~4.8 × 10(7) cm(-2)) at the grain centers. High-resolution TEM analysis demonstrates that most dislocations emerge at an angle with respect to the c-axis, whereas dislocations of the opposite phase form a loop and annihilate each other. The dislocation behavior is due to irregular (01) β-Ga2O3 surface at the interface and distorted buffer layer, followed by relaxed GaN epilayer. Photoluminescence results confirm high optical quality and time-resolved spectroscopy shows that the recombination is governed by bound excitons. We find that a low root-mean-square average (≤1.5 nm) of InxGa1-xN epilayers can be achieved with high optical quality of InxGa1-xN epilayers. We reveal that (01)-oriented β-Ga2O3 substrate has a strong potential for use in large-scale high-quality vertical light emitting device design.

  9. High-quality III-nitride films on conductive, transparent (2̅01)-oriented β-Ga2O3 using a GaN buffer layer

    Mumthaz Muhammed, Mufasila; Roldan, M. A.; Yamashita, Y.; Sahonta, S.-L.; Ajia, Idris A.; Iizuka, K.; Kuramata, A.; Humphreys, C. J.; Roqan, Iman S.

    2016-01-01

    We demonstrate the high structural and optical properties of InxGa1−xN epilayers (0 ≤ x ≤ 23) grown on conductive and transparent (01)-oriented β-Ga2O3 substrates using a low-temperature GaN buffer layer rather than AlN buffer layer, which enhances the quality and stability of the crystals compared to those grown on (100)-oriented β-Ga2O3. Raman maps show that the 2″ wafer is relaxed and uniform. Transmission electron microscopy (TEM) reveals that the dislocation density reduces considerably (~4.8 × 107 cm−2) at the grain centers. High-resolution TEM analysis demonstrates that most dislocations emerge at an angle with respect to the c-axis, whereas dislocations of the opposite phase form a loop and annihilate each other. The dislocation behavior is due to irregular (01) β-Ga2O3 surface at the interface and distorted buffer layer, followed by relaxed GaN epilayer. Photoluminescence results confirm high optical quality and time-resolved spectroscopy shows that the recombination is governed by bound excitons. We find that a low root-mean-square average (≤1.5 nm) of InxGa1−xN epilayers can be achieved with high optical quality of InxGa1−xN epilayers. We reveal that (01)-oriented β-Ga2O3 substrate has a strong potential for use in large-scale high-quality vertical light emitting device design.

  10. Optical and Micro-Structural Characterization of MBE Grown Indium Gallium Nitride Polar Quantum Dots

    El Afandy, Rami

    2011-07-07

    Gallium nitride and related materials have ushered in scientific and technological breakthrough for lighting, mass data storage and high power electronic applications. These III-nitride materials have found their niche in blue light emitting diodes and blue laser diodes. Despite the current development, there are still technological problems that still impede the performance of such devices. Three-dimensional nanostructures are proposed to improve the electrical and thermal properties of III-nitride optical devices. This thesis consolidates the characterization results and unveils the unique physical properties of polar indium gallium nitride quantum dots grown by molecular beam epitaxy technique. In this thesis, a theoretical overview of the physical, structural and optical properties of polar III-nitrides quantum dots will be presented. Particular emphasis will be given to properties that distinguish truncated-pyramidal III-nitride quantum dots from other III-V semiconductor based quantum dots. The optical properties of indium gallium nitride quantum dots are mainly dominated by large polarization fields, as well as quantum confinement effects. Hence, the experimental investigations for such quantum dots require performing bandgap calculations taking into account the internal strain fields, polarization fields and confinement effects. The experiments conducted in this investigation involved the transmission electron microscopy and x-ray diffraction as well as photoluminescence spectroscopy. The analysis of the temperature dependence and excitation power dependence of the PL spectra sheds light on the carrier dynamics within the quantum dots, and its underlying wetting layer. A further analysis shows that indium gallium nitride quantum dots through three-dimensional confinements are able to prevent the electronic carriers from getting thermalized into defects which grants III-nitrides quantum dot based light emitting diodes superior thermally induced optical

  11. Formation of gallium nitride templates and freestanding substrates by hydride vapor phase epitaxy for homoepitaxial growth of III-nitride devices

    Williams, Adrian Daniel

    planarize gallium-polar GaN, the preferred growth plane for devices. The process developed in this work bypasses the constraints of CMP, allowing for the planarization of all surfaces of GaN irrespective of crystal orientation. The GaN samples grown for this dissertation were studied by various techniques to characterize their structural, optical, and electrical properties.

  12. Optical characterization of gallium nitride

    Kirilyuk, Victoria

    2002-01-01

    Group III-nitrides have been considered a promising system for semiconductor devices since a few decades, first for blue- and UV-light emitting diodes, later also for high-frequency/high-power applications. Due to the lack of native substrates, heteroepitaxially grown III-nitride layers are usually

  13. Investigations of the Optical Properties of GaNAs Alloys by First-Principle.

    Borovac, Damir; Tan, Chee-Keong; Tansu, Nelson

    2017-12-11

    We present a Density Functional Theory (DFT) analysis of the optical properties of dilute-As GaN 1-x As x alloys with arsenic (As) content ranging from 0% up to 12.5%. The real and imaginary parts of the dielectric function are investigated, and the results are compared to experimental and theoretical values for GaN. The analysis extends to present the complex refractive index and the normal-incidence reflectivity. The refractive index difference between GaN and GaNAs alloys can be engineered to be up to ~0.35 in the visible regime by inserting relatively low amounts of As-content into the GaN system. Thus, the analysis elucidates on the birefringence of the dilute-As GaNAs alloys and comparison to other experimentally characterized III-nitride systems is drawn. Our findings indicate the potential of GaNAs alloys for III-nitride based waveguide and photonic circuit design applications.

  14. Optics

    Mathieu, Jean Paul

    1975-01-01

    Optics, Parts 1 and 2 covers electromagnetic optics and quantum optics. The first part of the book examines the various of the important properties common to all electromagnetic radiation. This part also studies electromagnetic waves; electromagnetic optics of transparent isotropic and anisotropic media; diffraction; and two-wave and multi-wave interference. The polarization states of light, the velocity of light, and the special theory of relativity are also examined in this part. The second part is devoted to quantum optics, specifically discussing the classical molecular theory of optical p

  15. Optics

    Fincham, W H A

    2013-01-01

    Optics: Ninth Edition Optics: Ninth Edition covers the work necessary for the specialization in such subjects as ophthalmic optics, optical instruments and lens design. The text includes topics such as the propagation and behavior of light; reflection and refraction - their laws and how different media affect them; lenses - thick and thin, cylindrical and subcylindrical; photometry; dispersion and color; interference; and polarization. Also included are topics such as diffraction and holography; the limitation of beams in optical systems and its effects; and lens systems. The book is recommen

  16. Optics

    Fincham, W H A

    2013-01-01

    Optics: Eighth Edition covers the work necessary for the specialization in such subjects as ophthalmic optics, optical instruments and lens design. The text includes topics such as the propagation and behavior of light; reflection and refraction - their laws and how different media affect them; lenses - thick and thin, cylindrical and subcylindrical; photometry; dispersion and color; interference; and polarization. Also included are topics such as diffraction and holography; the limitation of beams in optical systems and its effects; and lens systems. The book is recommended for engineering st

  17. First-Principle Study of the Optical Properties of Dilute-P GaN1-xPx Alloys.

    Borovac, Damir; Tan, Chee-Keong; Tansu, Nelson

    2018-04-16

    An investigation on the optical properties of dilute-P GaN 1-x P x alloys by First-Principle Density Functional Theory (DFT) methods is presented, for phosphorus (P) content varying from 0% up to 12.5%. Findings on the imaginary and real part of the dielectric function are analyzed and the results are compared with previously reported theoretical works on GaN. The complex refractive index, normal-incidence reflectivity and birefringence are presented and a difference in the refractive index in the visible regime between GaN and GaNP alloys of ~0.3 can be engineered by adding minute amounts of phosphorus, indicating strong potential for refractive index tunability. The optical properties of the GaN 1-x P x alloys indicate their strong potential for implementation in various III-nitride-based photonic waveguide applications and Distributed Bragg Reflectors (DBR).

  18. Ring resonator optical modes in InGaN/GaN structures grown on micro-cone-patterned sapphire substrates

    Kazanov, D. R.; Pozina, G.; Jmerik, V. N.; Shubina, T. V.

    2018-03-01

    Molecular beam epitaxy (MBE) of III-nitride compounds on specially prepared cone-shaped patterned substrates is being actively developed nowadays, especially for nanophotonic applications. This type of substrates enables the successful growth of hexagonal nanorods (NRs). The insertion of an active quantum-sized region of InGaN inside a GaN NR allows us to enhance the rate of optical transitions by coupling them with resonant optical modes in the NR. However, we have observed the enhancement of emission not only from the NR but also around the circumference region of the cone-shaped base. We have studied this specific feature and demonstrated its impact on the output signal.

  19. III-nitride based light emitting diodes and applications

    Han, Jung; Amano, Hiroshi; Morkoç, Hadis

    2013-01-01

    Light emitting diodes (LEDs) are already used in traffic signals, signage lighting, and automotive applications. However, its ultimate goal is to replace traditional illumination through LED lamps since LED lighting significantly reduces energy consumption and cuts down on carbon-dioxide emission. Despite dramatic advances in LED technologies (e.g., growth, doping and processing technologies), however, there remain critical issues for further improvements yet to be achieved for the realization of solid-state lighting. This book aims to provide the readers with some contemporary LED issues, which have not been comprehensively discussed in the published books and, on which the performance of LEDs is seriously dependent. For example, most importantly, there must be a breakthrough in the growth of high-quality nitride semiconductor epitaxial layers with a low density of dislocations, in particular, in the growth of Al-rich and and In-rich GaN-based semiconductors. The materials quality is directly dependent on th...

  20. Electrical properties of dislocations in III-Nitrides

    Cavalcoli, D.; Minj, A.; Pandey, S.; Cavallini, A. [Physics and Astronomy Dept. University of Bologna, Italy viale C Berti Pichat 6/II, Bologna (Italy)

    2014-02-21

    Research on GaN, AlN, InN (III-N) and their alloys is achieving new heights due their high potential applications in photonics and electronics. III-N semiconductors are mostly grown epitaxially on sapphire, and due to the large lattice mismatch and the differences in the thermal expansion coefficients, the structures usually contain many threading dislocations (TDs). While their structural properties have been widely investigated, their electrical characteristics and their role in the transport properties of the devices are still debated. In the present contribution we will show conductive AFM studies of TDs in GaN and Al/In GaN ternary alloys to evidence the role of strain, different surface polarity and composition on their electrical properties. Local I-V curves measured at TDs allowed us to clarify their role in the macroscopic electrical properties (leakage current, mobilities) of III-N based devices. Samples obtained by different growers (AIXTRON, III-V Lab) were studied. The comparison between the results obtained in the different alloys allowed us to understand the role of In and Al on the TDs electrical properties.

  1. Electrical properties of dislocations in III-Nitrides

    Cavalcoli, D.; Minj, A.; Pandey, S.; Cavallini, A.

    2014-02-01

    Research on GaN, AlN, InN (III-N) and their alloys is achieving new heights due their high potential applications in photonics and electronics. III-N semiconductors are mostly grown epitaxially on sapphire, and due to the large lattice mismatch and the differences in the thermal expansion coefficients, the structures usually contain many threading dislocations (TDs). While their structural properties have been widely investigated, their electrical characteristics and their role in the transport properties of the devices are still debated. In the present contribution we will show conductive AFM studies of TDs in GaN and Al/In GaN ternary alloys to evidence the role of strain, different surface polarity and composition on their electrical properties. Local I-V curves measured at TDs allowed us to clarify their role in the macroscopic electrical properties (leakage current, mobilities) of III-N based devices. Samples obtained by different growers (AIXTRON, III-V Lab) were studied. The comparison between the results obtained in the different alloys allowed us to understand the role of In and Al on the TDs electrical properties.

  2. Doping Mechanisms in Wide Bandgap Group III Nitrides

    Wessels, Bruce

    2002-01-01

    .... Several issues were addressed that include: (1) the structure, identity, solubility and stability of intentionally added and unintentional compensating donor defects in p-type and its material, (2...

  3. Doping Mechanisms in Wide Bandgap Group III Nitrides

    Wessels, Bruce

    2002-01-01

    .... The main objective was to determine the factors, which limit p-type conductivity in GaN and its alloys and to develop doping techniques to increase the hole concentrations to greater than 10(exp 19)/cu cm...

  4. Optical and Micro-Structural Characterization of MBE Grown Indium Gallium Nitride Polar Quantum Dots

    El Afandy, Rami

    2011-01-01

    Gallium nitride and related materials have ushered in scientific and technological breakthrough for lighting, mass data storage and high power electronic applications. These III-nitride materials have found their niche in blue light emitting diodes

  5. Surface emission of InxGa1-xN epilayers under strong optical excitation

    Jiang, H.X.; Lin, J.Y.; Khan, M.A.; Chen, Q.; Yang, J.W.

    1997-01-01

    Effects of strong optical excitation on the properties of surface emission from an InGaN/GaN heterostructure grown by metal-organic chemical-vapor deposition have been investigated. An intriguing feature observed was that as the excitation intensity increased the surface emission spectrum evolved abruptly from a single dominating band to two dominating bands at a critical intensity. This phenomenon has a sharp phase transition or a switching character and can be accounted for by (i) the formation of an electron endash hole plasma state in the InGaN vertical cavity under strong optical excitation, (ii) the photoreflectance effect (variation of index of refraction with excitation intensity), and (c) the Fabry endash Pacute erot interference effect in the InGaN vertical cavity. These findings are expected to have impact on the design of the laser structures, in particular on the design of the vertical-cavity surface-emitting laser diodes based on III-nitride wide-band-gap semiconductors. copyright 1997 American Institute of Physics

  6. GaN epilayers on nanopatterned GaN/Si(1 1 1) templates: Structural and optical characterization

    Wang, L.S.; Tripathy, S.; Wang, B.Z.; Chua, S.J.

    2006-01-01

    Template-based nanoscale epitaxy has been explored to realize high-quality GaN on Si(1 1 1) substrates. We have employed polystyrene-based nanosphere lithography to form the nano-hole array patterns on GaN/Si(1 1 1) template and then, subsequent regrowth of GaN is carried out by metalorganic chemical vapor deposition (MOCVD). During the initial growth stage of GaN on such nanopatterned substrates, we have observed formation of nanoislands with hexagonal pyramid shape due to selective area epitaxy. With further epitaxial regrowth, these nanoislands coalesce and form continuous GaN film. The overgrown GaN on patterned and non-patterned regions is characterized by high-resolution X-ray diffraction (HRXRD) and high-spatial resolution optical spectroscopic methods. Micro-photoluminescence (PL), micro-Raman scattering and scanning electron microscopy (SEM) have been used to assess the microstructural and optical properties of GaN. Combined PL and Raman data analyses show improved optical quality when compared to GaN simultaneously grown on non-patterned bulk Si(1 1 1). Such thicker GaN templates would be useful to achieve III-nitride-based opto- and electronic devices integrated on Si substrates

  7. Dislocations in AlGaN: Core Structure, Atom Segregation, and Optical Properties.

    Massabuau, Fabien C-P; Rhode, Sneha L; Horton, Matthew K; O'Hanlon, Thomas J; Kovács, András; Zielinski, Marcin S; Kappers, Menno J; Dunin-Borkowski, Rafal E; Humphreys, Colin J; Oliver, Rachel A

    2017-08-09

    We conducted a comprehensive investigation of dislocations in Al 0.46 Ga 0.54 N. Using aberration-corrected scanning transmission electron microscopy and energy dispersive X-ray spectroscopy, the atomic structure and atom distribution at the dislocation core have been examined. We report that the core configuration of dislocations in AlGaN is consistent with that of other materials in the III-Nitride system. However, we observed that the dissociation of mixed-type dislocations is impeded by alloying GaN with AlN, which is confirmed by our experimental observation of Ga and Al atom segregation in the tensile and compressive parts of the dislocations, respectively. Investigation of the optical properties of the dislocations shows that the atom segregation at dislocations has no significant effect on the intensity recorded by cathodoluminescence in the vicinity of the dislocations. These results are in contrast with the case of dislocations in In 0.09 Ga 0.91 N where segregation of In and Ga atoms also occurs but results in carrier localization limiting non-radiative recombination at the dislocation. This study therefore sheds light on why InGaN-based devices are generally more resilient to dislocations than their AlGaN-based counterparts.

  8. Optical and electronic properties of AlGaN/GaN heterostructures; Optische und elektronische Eigenschaften von AlGaN/GaN-Heterostrukturen

    Winzer, Andreas T.

    2008-10-28

    The electronic material properties of AlGaN/GaN heterostructures were investigated. The analysis of optical spectra by complex models allowed for the first time to confirm the theoretically predicted dependence of the polarisation discontinuity (also called polarisation charge) on the Al content by reliable experiments. Furthermore, it is shown that the polarisation discontinuity is constant over the temperature range from 5 K up to room temperature. The method employed here is based on the analysis of electroreflectance (ER) spectra and exploits the specific dependence of the electric field strength within a layer on the applied electric voltage. In this work this method is consequently refined to surpass all alternative methods in accuracy. ER spectra of group-III-nitrides posses some general peculiarities: (i) In di- rect proximity to the band gap they can not be described by constant Seraphin coefficients in contrast to small gap semiconductors (e.g. GaAs). (ii) Though, the analysis of the Franz-Keldysh oscillations by Aspnes' method yields the correct values of the electric field strength as it is the case for small gap semiconductors. Optical and especially ER spectra of group-III-nitrides can only be described completely by taking into account for excitons in electric fields. For this a mo- del proposed by Blossey was applied to nitride semiconductors and implemented into a software program. By extensive numerical simulations it was found that the energetic position of the exciton main resonance as well as its spectral width depend linearly on the electric field strength. The approach presented is unique since it allows for a quantitative description of excitons in inhomogeneous electric fields. The good agreement between experiment and simulation supports the reliability of the material properties presented in this work. The operation of AlGaN/GaN heterostructures as chemical sensors was investigated by means of optical spectra too. If Pt contacted

  9. Optics/Optical Diagnostics Laboratory

    Federal Laboratory Consortium — The Optics/Optical Diagnostics Laboratory supports graduate instruction in optics, optical and laser diagnostics and electro-optics. The optics laboratory provides...

  10. Optical and electronic properties of InGaAs and nitride quantum dots

    Baer, N.

    2006-06-15

    In the present thesis, the electronic and optical properties of such nanostructures have been investigated for the well established III-V and the new group-III nitride material system. The influence of Coulomb correlations on the optical spectra of InGaAs QDs are studied using a full configuration interaction approach. The resulting multi-exciton spectra for up to twelve excitons are investigated in detail. Characteristic features of the spectra are explained using simplified Hamiltonians that are derived taking into account the relative importance of various interaction contributions. Additionally, we study the electronic and optical properties of self-assembled InN/GaN quantum dots. The existence of an exactly degenerate p-shell is discussed in detail. Dipole and Coulomb matrix elements are calculated from these one-particle wave functions and serve as an input for configuration interaction calculations. We present multi-exciton emission spectra and investigate how Coulomb correlations and oscillator strengths are altered by the built-in electrostatic fields present in these structures. From our results, we predict vanishing exciton and biexciton ground state emission for small lens-shaped dots, which is explained by a careful analysis of the underlying symmetry group. To study the photoluminescence dynamics of an initially excited QD system, we employ a microscopic semiconductor theory. Carrier-carrier correlations beyond the Hartee-Fock level are included within a cluster expansion truncation scheme up to the singlet-doublet level. The influence of these correlations on the spectrum and the photoluminescence dynamics is investigated for the emission into free space as well as for QDs embedded in an optical microcavity. (orig.)

  11. Optical and electronic properties of InGaAs and nitride quantum dots

    Baer, N.

    2006-06-01

    In the present thesis, the electronic and optical properties of such nanostructures have been investigated for the well established III-V and the new group-III nitride material system. The influence of Coulomb correlations on the optical spectra of InGaAs QDs are studied using a full configuration interaction approach. The resulting multi-exciton spectra for up to twelve excitons are investigated in detail. Characteristic features of the spectra are explained using simplified Hamiltonians that are derived taking into account the relative importance of various interaction contributions. Additionally, we study the electronic and optical properties of self-assembled InN/GaN quantum dots. The existence of an exactly degenerate p-shell is discussed in detail. Dipole and Coulomb matrix elements are calculated from these one-particle wave functions and serve as an input for configuration interaction calculations. We present multi-exciton emission spectra and investigate how Coulomb correlations and oscillator strengths are altered by the built-in electrostatic fields present in these structures. From our results, we predict vanishing exciton and biexciton ground state emission for small lens-shaped dots, which is explained by a careful analysis of the underlying symmetry group. To study the photoluminescence dynamics of an initially excited QD system, we employ a microscopic semiconductor theory. Carrier-carrier correlations beyond the Hartee-Fock level are included within a cluster expansion truncation scheme up to the singlet-doublet level. The influence of these correlations on the spectrum and the photoluminescence dynamics is investigated for the emission into free space as well as for QDs embedded in an optical microcavity. (orig.)

  12. Lattice site location of electrical dopant impurities in group-III nitrides

    Amorim, Lígia; Temst, Kristiaan; Wahl, Ulrich

    Dopants are impurities introduced in semiconductors in small quantities to tailor the material characteristics, the effects of which depend on the exact site the dopant occupies in the crystal lattice. The lattice location of impurities is, thus, crucial for the overall understanding of the semiconductor characteristics. In general, several techniques can be used to investigate the lattice site of an impurity, the most accurate and dedicated being emission channeling. However, a characteristic of this technique is that it requires the implantation of radioactive probes, usually created and accelerated in a radioactive ion beam facility. In some cases, emission channeling might however be the only technique capable to investigate the lattice sites occupied by the impurity atoms, provided an appropriate isotope for this technique can be used. For instance, the use of other methods such as Rutherford backscattering spectrometry, perturbed angular correlations, Mössbauer spectroscopy and extended X-ray absorptio...

  13. Differential carrier lifetime and transport effects in electrically injected III-nitride light-emitting diodes

    Rashidi, A.; Nami, M.; Monavarian, M.; Aragon, A.; DaVico, K.; Ayoub, F.; Mishkat-Ul-Masabih, S.; Rishinaramangalam, A.; Feezell, D.

    2017-07-01

    This work describes a small-signal microwave method for determining the differential carrier lifetime and transport effects in electrically injected InGaN/GaN light-emitting diodes (LEDs). By considering the carrier diffusion, capture, thermionic escape, and recombination, the rate equations are used to derive an equivalent small-signal electrical circuit for the LEDs, from which expressions for the input impedance and modulation response are obtained. The expressions are simultaneously fit to the experimental data for the input impedance and modulation response for nonpolar InGaN/GaN micro-LEDs on free-standing GaN substrates. The fittings are used to extract the transport related circuit parameters and differential carrier lifetimes. The dependence of the parameters on the device diameter and current density is reported. We also derive approximations for the modulation response under low and high injection levels and show that the transport of carriers affects the modulation response of the device, especially at low injection levels. The methods presented are relevant to the design of high-speed LEDs for visible-light communication.

  14. Advanced in-situ control for III-nitride RF power device epitaxy

    Brunner, F.; Zettler, J.-T.; Weyers, M.

    2018-04-01

    In this contribution, the latest improvements regarding wafer temperature measurement on 4H-SiC substrates and, based on this, of film thickness and composition control of GaN and AlGaN layers in power electronic device structures are presented. Simultaneous pyrometry at different wavelengths (950 nm and 405 nm) reveal the advantages and limits of the different temperature measurement approaches. Near-UV pyrometry gives a very stable wafer temperature signal without oscillations during GaN growth since the semi-insulating 4H-SiC substrate material becomes opaque at temperatures above 550 °C at the wavelength of 405 nm. A flat wafer temperature profile across the 100 mm substrate diameter is demonstrated despite a convex wafer shape at AlGaN growth conditions. Based on the precise assignment of wafer temperature during MOVPE we were able to improve the accuracy of the high-temperature n-k database for the materials involved. Consequently, the measurement accuracy of all film thicknesses grown under fixed temperature conditions improved. Comparison of in situ and ex situ determined layer thicknessess indicate an unintended etching of the topmost layer during cool-down. The details and limitations of real-time composition analysis for lower Al-content AlGaN barrier layers during transistor device epitaxy are shown.

  15. In-plane anisotropic strain of elastically and plastically deformed III-nitrides on lithium gallate

    Namkoong, Gon, E-mail: gnamkoon@odu.ed [Old Dominion University, Electrical and Computer Engineering, Applied Research Center, 12050 Jefferson Avenue, Newport News, VA 23606 (United States); Huang, Sa; Moseley, Michael; Doolittle, W. Alan [Georgia Institute of Technology, School of Electrical and Computer Engineering, 777 Atlantic Dr., Atlanta, GA 30332 (United States)

    2009-10-30

    We have investigated both elastically and plastically deformed GaN films on lithium gallate, LiGaO{sub 2}, by molecular beam epitaxy. The in-plane lattice parameters were determined from high resolution X-ray diffraction and indicated two different groups of in-plane lattice parameters, influenced by the a- and b-axis of LiGaO{sub 2}. The measured in-plane lattice parameters indicate that there exist both compressive and tensile strains of in-plane GaN along the a- and b-axis of LiGaO{sub 2}, respectively. This anisotropic strain in GaN films forms a slight distortion of the basal-plane hexagonal structure of GaN films, leading to a different critical thickness of 4.0 {+-} 0.17 and 7.8 {+-} 0.7 nm along the a- and b-axis of LiGaO{sub 2}, respectively.

  16. Molecular-beam epitaxial growth and characterization of quaternary III-nitride compounds

    Monroy, E.; Gogneau, N.; Enjalbert, F.; Fossard, F.; Jalabert, D.; Bellet-Amalric, E.; Dang, Le Si; Daudin, B.

    2003-01-01

    We report on the controlled growth and characterization of quaternary AlGaInN compounds by plasma-assisted molecular beam epitaxy. Two-dimensional growth is achieved with a monolayer of In segregating at the growth front. In incorporation is hindered by increasing growth temperature and Al mole fraction, which is explained by the lower binding energy of InN compared to GaN and AlN. The mosaicity of the layers is determined by the substrate quality, whereas the alloy disorder increases with the Al content, independent of the In mole fraction. Room temperature photoluminescence is dominated by a narrow band-edge emission, whose Stokes shift and activation energy increase with the In content. This behavior is interpreted in terms of carrier localization in self-formed alloy inhomogeneities. An In-related band bowing parameter of 2.5 eV has been estimated

  17. Self-annihilation of inversion domains by high energy defects in III-Nitrides

    Koukoula, T.; Kioseoglou, J.; Kehagias, Th.; Komninou, Ph.; Ajagunna, A. O.; Georgakilas, A.

    2014-01-01

    Low-defect density InN films were grown on Si(111) by molecular beam epitaxy over an ∼1 μm thick GaN/AlN buffer/nucleation layer. Electron microscopy observations revealed the presence of inverse polarity domains propagating across the GaN layer and terminating at the sharp GaN/InN (0001 ¯ ) interface, whereas no inversion domains were detected in InN. The systematic annihilation of GaN inversion domains at the GaN/InN interface is explained in terms of indium incorporation on the Ga-terminated inversion domains forming a metal bonded In-Ga bilayer, a structural instability known as the basal inversion domain boundary, during the initial stages of InN growth on GaN

  18. An Integrated Approach to III-Nitride Crystal Growth and Wafering

    Sitar, Z

    2001-01-01

    Centimeter size, transparent AlN crystals were grown at NCSU. TEM and XRT examination performed at ASU and SUNYSB revealed that the crystals are of highest quality and do not contain any visible extended defects...

  19. A charge inverter for III-nitride light-emitting diodes

    Zhang, Zi-Hui, E-mail: zh.zhang@hebut.edu.cn, E-mail: wbi@hebut.edu.cn, E-mail: volkan@stanfordalumni.org, E-mail: sunxw@sustc.edu.cn; Zhang, Yonghui; Bi, Wengang, E-mail: zh.zhang@hebut.edu.cn, E-mail: wbi@hebut.edu.cn, E-mail: volkan@stanfordalumni.org, E-mail: sunxw@sustc.edu.cn; Geng, Chong; Xu, Shu [Key Laboratory of Electronic Materials and Devices of Tianjin, School of Electronics and Information Engineering, Hebei University of Technology, 5340 Xiping Road, Beichen District, Tianjin 300401 (China); Demir, Hilmi Volkan, E-mail: zh.zhang@hebut.edu.cn, E-mail: wbi@hebut.edu.cn, E-mail: volkan@stanfordalumni.org, E-mail: sunxw@sustc.edu.cn [LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore (Singapore); Department of Electrical and Electronics, Department of Physics, and UNAM-Institute of Material Science and Nanotechnology, Bilkent University, TR-06800 Ankara (Turkey); Sun, Xiao Wei, E-mail: zh.zhang@hebut.edu.cn, E-mail: wbi@hebut.edu.cn, E-mail: volkan@stanfordalumni.org, E-mail: sunxw@sustc.edu.cn [LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore (Singapore); Department of Electrical and Electronic Engineering, College of Engineering, South University of Science and Technology, 1088 Xue-Yuan Road, Nanshan, Shenzhen, Guangdong 518055 (China)

    2016-03-28

    In this work, we propose a charge inverter that substantially increases the hole injection efficiency for InGaN/GaN light-emitting diodes (LEDs). The charge inverter consists of a metal/electrode, an insulator, and a semiconductor, making an Electrode-Insulator-Semiconductor (EIS) structure, which is formed by depositing an extremely thin SiO{sub 2} insulator layer on the p{sup +}-GaN surface of a LED structure before growing the p-electrode. When the LED is forward-biased, a weak inversion layer can be obtained at the interface between the p{sup +}-GaN and SiO{sub 2} insulator. The weak inversion region can shorten the carrier tunnel distance. Meanwhile, the smaller dielectric constant of the thin SiO{sub 2} layer increases the local electric field within the tunnel region, and this is effective in promoting the hole transport from the p-electrode into the p{sup +}-GaN layer. Due to the improved hole injection, the external quantum efficiency is increased by 20% at 20 mA for the 350 × 350 μm{sup 2} LED chip. Thus, the proposed EIS holds great promise for high efficiency LEDs.

  20. A first principle study of band structure of III-nitride compounds

    Ahmed, Rashid [Centre for High Energy Physics University of the Punjab, Lahore-54590 (Pakistan)]. E-mail: rasofi@hotmail.com; Akbarzadeh, H. [Department of Physics, Isfahan University of Technology, 841546 Isfahan (Iran, Islamic Republic of); Fazal-e-Aleem [Centre for High Energy Physics University of the Punjab, Lahore-54590 (Pakistan)

    2005-12-15

    The band structure of both phases, zinc-blende and wurtzite, of aluminum nitride, indium nitride and gallium nitride has been studied using computational methods. The study has been done using first principle full-potential linearized augmented plane wave (FP-LAPW) method, within the framework of density functional theory (DFT). For the exchange correlation potential, generalized gradient approximation (GGA) and an alternative form of GGA proposed by Engel and Vosko (GGA-EV) have been used. Results obtained for band structure of these compounds have been compared with experimental results as well as other first principle computations. Our results show a significant improvement over other theoretical work and are closer to the experimental data.

  1. Are Fe and Co implanted ZnO and III-nitride semiconductors magnetic?

    AUTHOR|(CDS)2081284; Bharuth-Ram, Krish

    The chemical nature, lattice site locations and magnetic behaviour of Fe and/or Co ions implanted in nitrides (GaN, AlN, and InN) and in ZnO have been investigated using Mössbauer spectroscopy and vibrating sample magnetometer (VSM) techniques. Mössbauer data on nitride and $^{56}$Fe pre-implanted ZnO samples were obtained from emission Mössbauer spectroscopy (eMS) measurements at the ISOLDE facility, CERN, following the implantation of radioactive $^{57}$Mn$^{*}$ which $\\beta$$^{-}$decays to the 14.4 keV Mössbauer state of $^{57}$Fe. In addition, conversion electron Mössbauer spectroscopy (CEMS) data were collected on ZnO single crystals co-implanted with $^{57}$Fe + $^{56}$Fe and $^{57}$Fe + $^{59}$Co ions in a box profile. Emission Mössbauer spectra obtained for GaN and AlN reveal magnetic structure in the ‘wings’ assigned to high spin Fe$^{3+}$ weakly coupled to the lattice showing spin-lattice relaxation effects. The observed spin-relaxation rate (τ$^{-1}$) closely follows a ${T}^{2}$ temperat...

  2. In-plane anisotropic strain of elastically and plastically deformed III-nitrides on lithium gallate

    Namkoong, Gon; Huang, Sa; Moseley, Michael; Doolittle, W. Alan

    2009-01-01

    We have investigated both elastically and plastically deformed GaN films on lithium gallate, LiGaO 2 , by molecular beam epitaxy. The in-plane lattice parameters were determined from high resolution X-ray diffraction and indicated two different groups of in-plane lattice parameters, influenced by the a- and b-axis of LiGaO 2 . The measured in-plane lattice parameters indicate that there exist both compressive and tensile strains of in-plane GaN along the a- and b-axis of LiGaO 2 , respectively. This anisotropic strain in GaN films forms a slight distortion of the basal-plane hexagonal structure of GaN films, leading to a different critical thickness of 4.0 ± 0.17 and 7.8 ± 0.7 nm along the a- and b-axis of LiGaO 2 , respectively.

  3. Spectroscopy and Device Performance of Rare Earth Doped III-Nitrides

    Hommerich, Uwe

    2002-01-01

    .... Prime candidates for redgreen- blue (RGB) emission are the rare earth ions Eu3+ (red), Er3+ (green), and Tm3+ (blue). A full-color TFEL phosphor system based on RE doped GaN has been demonstrated with high brightness...

  4. On the hole accelerator for III-nitride light-emitting diodes

    Zhang, Zi-Hui; Zhang, Yonghui; Bi, Wengang; Geng, Chong; Xu, Shu; Demir, Hilmi Volkan; Sun, Xiao Wei

    2016-01-01

    In this work, we systematically conduct parametric studies revealing the sensitivity of the hole injection on the hole accelerator (a hole accelerator is made of the polarization mismatched p-electron blocking layer (EBL)/p-GaN/p-Al x Ga 1−x N heterojunction) with different designs, including the AlN composition in the p-Al x Ga 1−x N layer, and the thickness for the p-GaN layer and the p-Al x Ga 1−x N layer. According to our findings, the energy that the holes obtain does not monotonically increase as the AlN incorporation in the p-Al x Ga 1−x N layer increases. Meanwhile, with p-GaN layer or p-Al x Ga 1−x N layer thickening, the energy that the holes gain increases and then reaches a saturation level. Thus, the hole injection efficiency and the device efficiency are very sensitive to the p-EBL/p-GaN/p-Al x Ga 1−x N design, and the hole accelerator can effectively increase the hole injection if properly designed.

  5. A charge inverter for III-nitride light-emitting diodes

    Zhang, Zi-Hui; Zhang, Yonghui; Bi, Wengang; Geng, Chong; Xu, Shu; Demir, Hilmi Volkan; Sun, Xiao Wei

    2016-01-01

    In this work, we propose a charge inverter that substantially increases the hole injection efficiency for InGaN/GaN light-emitting diodes (LEDs). The charge inverter consists of a metal/electrode, an insulator, and a semiconductor, making an Electrode-Insulator-Semiconductor (EIS) structure, which is formed by depositing an extremely thin SiO 2 insulator layer on the p + -GaN surface of a LED structure before growing the p-electrode. When the LED is forward-biased, a weak inversion layer can be obtained at the interface between the p + -GaN and SiO 2 insulator. The weak inversion region can shorten the carrier tunnel distance. Meanwhile, the smaller dielectric constant of the thin SiO 2 layer increases the local electric field within the tunnel region, and this is effective in promoting the hole transport from the p-electrode into the p + -GaN layer. Due to the improved hole injection, the external quantum efficiency is increased by 20% at 20 mA for the 350 × 350 μm 2 LED chip. Thus, the proposed EIS holds great promise for high efficiency LEDs.

  6. Group III nitride-arsenide long wavelength lasers grown by elemental source molecular beam epitaxy

    Coldren, C. W.; Spruytte, S. G.; Harris, J. S.; Larson, M. C.

    2000-01-01

    Elemental source molecular beam epitaxy was used to grow InGaNAs quantum well samples, edge-emitting laser diodes, and vertical-cavity laser diodes on GaAs substrates. The quantum well samples exhibited an as-grown room temperature photoluminescence peak beyond 1310 nm which both increased dramatically in intensity and blueshifted with thermal annealing. Edge emitting laser diodes had threshold current densities as low as 450 and 750 A/cm 2 for single and triple quantum well active regions, respectively, and emitted light at 1220-1250 nm. The vertical cavity laser diodes emitted light at 1200 nm and had threshold current densities of 3 kA/cm 2 and efficiencies of 0.066 W/A. (c) 2000 American Vacuum Society

  7. Optical materials

    Poker, D.B.; Ortiz, C.

    1989-01-01

    This book reports on: Diamond films, Synthesis of optical materials, Structure related optical properties, Radiation effects in optical materials, Characterization of optical materials, Deposition of optical thin films, and Optical fibers and waveguides

  8. Optic neuritis

    Retro-bulbar neuritis; Multiple sclerosis - optic neuritis; Optic nerve - optic neuritis ... The exact cause of optic neuritis is unknown. The optic nerve carries visual information from your eye to the brain. The nerve can swell when ...

  9. Nonlinear optics

    Boyd, R.W.

    1992-01-01

    Nonlinear optics is the study of the interaction of intense laser light with matter. This book is a textbook on nonlinear optics at the level of a beginning graduate student. The intent of the book is to provide an introduction to the field of nonlinear optics that stresses fundamental concepts and that enables the student to go on to perform independent research in this field. This book covers the areas of nonlinear optics, quantum optics, quantum electronics, laser physics, electrooptics, and modern optics

  10. Physical optics

    Kim Il Gon; Lee, Seong Su; Jang, Gi Wan

    2012-07-01

    This book indicates physical optics with properties and transmission of light, mathematical expression of wave like harmonic wave and cylindrical wave, electromagnetic theory and light, transmission of light with Fermat principle and Fresnel equation, geometrical optics I, geometrical optics II, optical instrument such as stops, glasses and camera, polarized light like double refraction by polarized light, interference, interference by multiple reflections, diffraction, solid optics, crystal optics such as Faraday rotation and Kerr effect and measurement of light. Each chapter has an exercise.

  11. Physical optics

    Kim Il Gon; Lee, Seong Su; Jang, Gi Wan

    2012-07-15

    This book indicates physical optics with properties and transmission of light, mathematical expression of wave like harmonic wave and cylindrical wave, electromagnetic theory and light, transmission of light with Fermat principle and Fresnel equation, geometrical optics I, geometrical optics II, optical instrument such as stops, glasses and camera, polarized light like double refraction by polarized light, interference, interference by multiple reflections, diffraction, solid optics, crystal optics such as Faraday rotation and Kerr effect and measurement of light. Each chapter has an exercise.

  12. Quantum optics

    Agarwal, G. S

    2013-01-01

    .... Focusing on applications of quantum optics, the textbook covers recent developments such as engineering of quantum states, quantum optics on a chip, nano-mechanical mirrors, quantum entanglement...

  13. Optical Computing

    Woods, Damien; Naughton, Thomas J.

    2008-01-01

    We consider optical computers that encode data using images and compute by transforming such images. We give an overview of a number of such optical computing architectures, including descriptions of the type of hardware commonly used in optical computing, as well as some of the computational efficiencies of optical devices. We go on to discuss optical computing from the point of view of computational complexity theory, with the aim of putting some old, and some very recent, re...

  14. Cloning, expression analysis, and antibacterial propertiesof three serum amyloid A in common carp (Cyprinus carpio).

    Yu, Juhua; Tang, Yongkai; Li, Jianlin; Li, Hongxia; Yu, Fan; Yu, Wenjuan; He, Feng; Fu, Chunjie; Mao, Shuntao

    2017-06-01

    Three serum amyloid A (SAA) genes were identified from the common carp (Cyprinus carpio) by PCR and RT-PCR. Considering both direction and sequence similarity with mammal's orthologs, they were named CcSAA3a, CcSAA3b and CcSAA1. CcSAA3b and CcSAA1 are adjacent on contig LHQP01017858, suggesting that the prototype of or the simplest SAA multigene family have occurred in common carp. A phylogenetic analysis of the SAAs indicated that the fish SAAs were closer to those of invertebrates and Ornithorhynchus anatinus, a primitive mammal, than to mammalian SAAs. Quantitative real-time RT-PCR results displayed different expression profiles of three CcSAAs. The CcSAA3a was detected in all tested tissues, and was most abundant in the muscle; CcSAA3b was predominately expressed in the intestine and liver, and CcSAA1 in the skin. The expression level of CcSAA3a was higher than that of CcSAA3b and CcSAA1 in most tissues. Stimulation with Aeromonas hydrophila dramatically induced the expression of the three CcSAAs in all examined tissues, especially in the liver. Like Epinephelus coioides SAA, all of three rCcSAA fusion proteins could bind to both Gram-negative bacteria (A. hydrophila and E. coli) and Gram-positive bacterium (S. aureus), playing a role in the identification of bacteria. However, only rCcSAA3a showed significantly anti-A. hydrophila and anti-E. coli in vitro antibacterial activity assays. These results suggested that the three CcSAAs were in functional differentiation and play significant roles in the innate immunity of common carp. Copyright © 2017. Published by Elsevier Ltd.

  15. ANATOMICAL AND PHYSICAL PROPERTIESOF BISBUL WOOD (Diospyros blancoi A.DC.

    Krisdianto Krisdianto

    2005-03-01

    Full Text Available Ebony (Diospyros sp.  is a heavy hardwood that is  popularly known as blackwood. Diospyros consists of over 300 species spread throughout tropics area and about 100 species occur in Indonesia. Bisbul wood (Diospyros btancoi A.DC. is one species of  streaked ebony that is locally known as 'buah mentega'.  The anatomical and physical properties of  bisbul  were studied to collect information  for wood identification  and to support appropriate use of the timber. Anatomical properties were studied from microtome sectioned samples, which have been coloured by safranin and mounted by entellan, while fiber dimensions  were studied from macerated samples.  Physical properties  of  bisbul wood studied include moisture content, density and percentage of volumetric shrinkage. Moisture content and density were studied from 20 x 20 x 20 mm samples based on wet and oven dry condition. Volumetric shrinkage was measured from dimension changes in radial, tangential and longitudinal shrinkage of 20 x 20 x 40 mm samples. The samples were measured in wet and oven dry conditions. The main anatomical characteristics to identify bisbul wood were black wood with pinkish streaked, heavy and very hard,  very fine texture, even, lustrous surface and glossy, distinct growth ring, small size of vessels, apotracheal parenchyma forming reticulate pattern. The average moisture content was 59.86 ± 2.84%,  the density average was 0.74 ± 0.04 gr/cm3  and volumetric shrinkage was 10.41±0.70%.   The higher the stem, the more moisture  content and the lower the density will be. Sapwood density was lower and had more moisture  content than heartwood. The black pinkish heavy wood, bisbul was recommended to be used for carvings, sculpture, souvenir and luxuryinterior products.

  16. Engineering Optics

    Iizuka, Keigo

    2008-01-01

    Engineering Optics is a book for students who want to apply their knowledge of optics to engineering problems, as well as for engineering students who want to acquire the basic principles of optics. It covers such important topics as optical signal processing, holography, tomography, holographic radars, fiber optical communication, electro- and acousto-optic devices, and integrated optics (including optical bistability). As a basis for understanding these topics, the first few chapters give easy-to-follow explanations of diffraction theory, Fourier transforms, and geometrical optics. Practical examples, such as the video disk, the Fresnel zone plate, and many more, appear throughout the text, together with numerous solved exercises. There is an entirely new section in this updated edition on 3-D imaging.

  17. Electron optics

    Grivet, Pierre; Bertein, F; Castaing, R; Gauzit, M; Septier, Albert L

    1972-01-01

    Electron Optics, Second English Edition, Part I: Optics is a 10-chapter book that begins by elucidating the fundamental features and basic techniques of electron optics, as well as the distribution of potential and field in electrostatic lenses. This book then explains the field distribution in magnetic lenses; the optical properties of electrostatic and magnetic lenses; and the similarities and differences between glass optics and electron optics. Subsequent chapters focus on lens defects; some electrostatic lenses and triode guns; and magnetic lens models. The strong focusing lenses and pris

  18. Applied optics

    Orszag, A.; Antonetti, A.

    1988-01-01

    The 1988 progress report, of the Applied Optics laboratory, of the (Polytechnic School, France), is presented. The optical fiber activities are focused on the development of an optical gyrometer, containing a resonance cavity. The following domains are included, in the research program: the infrared laser physics, the laser sources, the semiconductor physics, the multiple-photon ionization and the nonlinear optics. Investigations on the biomedical, the biological and biophysical domains are carried out. The published papers and the congress communications are listed [fr

  19. Reduced-droop green III-nitride light-emitting diodes utilizing GaN tunnel junction

    Alhassan, Abdullah I.; Young, Erin C.; Alyamani, Ahmed Y.; Albadri, Abdulrahman; Nakamura, Shuji; DenBaars, Steven P.; Speck, James S.

    2018-04-01

    We report the fabrication of low-droop high-efficiency green c-plane light-emitting diodes (LEDs) utilizing GaN tunnel junction (TJ) contacts. The LED epitaxial layers with a top p-GaN layer were grown by metal organic chemical vapor deposition and an n++-GaN layer was deposited by molecular beam epitaxy to form a TJ. The TJ LEDs were then compared with equivalent LEDs having a tin-doped indium oxide (ITO) contact. The TJ LEDs exhibited a higher performance and a lower efficiency droop than did the ITO LEDs. At 35 A/cm2, the external quantum efficiencies for the TJ and ITO LEDs were 31.2 and 27%, respectively.

  20. GaN-Ready Aluminum Nitride Substrates for Cost-Effective, Very Low Dislocation Density III-Nitride LEDs

    Schujman, Sandra; Schowalter, Leo

    2011-01-01

    The objective of this project was to develop and then demonstrate the efficacy of a cost effective approach for a low defect density substrate on which AlInGaN LEDs can be fabricated. The efficacy of this 'GaN-ready' substrate would then be tested by growing high efficiency, long lifetime InxGa1-xN blue LEDs. The approach used to meet the project objectives was to start with low dislocation density AlN single-crystal substrates and grow graded Al x Ga 1-x N layers on top. Pseudomorphic Al x Ga 1-x N epitaxial layers grown on bulk AlN substrates were used to fabricate light emitting diodes and demonstrate better device performance as a result of the low defect density in these layers when benched marked against state-of-the-art LEDs fabricated on sapphire substrates. The pseudomorphic LEDs showed excellent output powers compared to similar wavelength devices grown on sapphire substrates, with lifetimes exceeding 10,000 hours (which was the longest time that could reliably be estimated). In addition, high internal quantum efficiencies were demonstrated at high driving current densities even though the external quantum efficiencies were low due to poor photon extraction. Unfortunately, these pseudomorphic LEDs require high Al content so they emit in the ultraviolet. Sapphire based LEDs typically have threading dislocation densities (TDD) > 10 8 cm -2 while the pseudomorphic LEDs have TDD (le) 10 5 cm -2 . The resulting TDD, when grading the Al x Ga 1-x N layer all the way to pure GaN to produce a 'GaN-ready' substrate, has varied between the mid 10 8 down to the 10 6 cm -2 . These inconsistencies are not well understood. Finally, an approach to improve the LED structures on AlN substrates for light extraction efficiency was developed by thinning and roughening the substrate.

  1. Lateral polarity control of III-nitride thin film and application in GaN Schottky barrier diode

    Li, Junmei; Guo, Wei; Sheikhi, Moheb; Li, Hongwei; Bo, Baoxue; Ye, Jichun

    2018-05-01

    N-polar and III-polar GaN and AlN epitaxial thin films grown side by side on single sapphire substrate was reported. Surface morphology, wet etching susceptibility and bi-axial strain conditions were investigated and the polarity control scheme was utilized in the fabrication of Schottky barrier diode where ohmic contact and Schottky contact were deposited on N-polar domains and Ga-polar domains, respectively. The influence of N-polarity on on-state resistivity and I–V characteristic was discussed, demonstrating that lateral polarity structure of GaN and AlN can be widely used in new designs of optoelectronic and electronic devices. Project partially supported by the National Key Research and Development Program of China (No. 2016YFB0400802), the National Natural Science Foundation of China (No. 61704176), and the Open project of Zhejiang Key Laboratory for Advanced Microelectronic Intelligent Systems and Applications (No. ZJUAMIS1704).

  2. III-nitride disk-in-nanowire 1.2 μm monolithic diode laser on (001)silicon

    Hazari, Arnab; Aiello, Anthony; Ng, Tien Khee; Ooi, Boon S.; Bhattacharya, Pallab

    2015-01-01

    recombination lifetime of 1.84 ns in the disks is measured by time-resolved luminescence measurements. Edge-emitting nanowire lasers have been fabricated and characterized. Measured values of Jth, T0, and dg/dn in these devices are 1.24 kA/cm2, 242 K, and 5

  3. Systematic Study of p-type Doping and Related Defects in III-Nitrides: Pathway toward a Nitride HBT

    2012-11-20

    indium and gallium and were between 0.24 and 0.3 × 10-7 Torr normalized BEP . InGaN was grown via MME using a shutter modulation scheme similar to...surface for subsequent growth.18, 20-23 The aluminum flux during the buffer layer growth was 6x10-7 Torr beam equivalent pressure ( BEP ), and the...Gallium was supplied by either a standard effusion cell or a Veeco SUMO® cell at a metal-rich flux of 6.5x10-7 to 7.5x10-7 Torr BEP . Gallium and

  4. Development of a Photoelectrochemical Etch Process to Enable Heterogeneous Substrate Integration of Epitaxial III-Nitride Semiconductors

    2017-12-01

    release stack. Recently, this technique has been refined with band engineering within the release layer7 and extended to the point where it has been...liftoff. Mesas with a 200-μm diameter are lithographically defined and etched down to a depth of approximately 450 nm using a plasma etching chemistry ...etch chemistry , bonding, and other materials processing vary, but the setup created for this project can be applied to others as well. Approved

  5. Fluidic optics

    Whitesides, George M.; Tang, Sindy K. Y.

    2006-09-01

    Fluidic optics is a new class of optical system with real-time tunability and reconfigurability enabled by the introduction of fluidic components into the optical path. We describe the design, fabrication, operation of a number of fluidic optical systems, and focus on three devices, liquid-core/liquid-cladding (L2) waveguides, microfluidic dye lasers, and diffraction gratings based on flowing, crystalline lattices of bubbles, to demonstrate the integration of microfluidics and optics. We fabricate these devices in poly(dimethylsiloxane) (PDMS) with soft-lithographic techniques. They are simple to construct, and readily integrable with microanalytical or lab-on-a-chip systems.

  6. Optical fibres

    Geisler, J; Boutruche, J P

    1986-01-01

    Optical Fibers covers numerous research works on the significant advances in optical fibers, with particular emphasis on their application.This text is composed of three parts encompassing 15 chapters. The first part deals with the manufacture of optical fibers and the materials used in their production. The second part describes optical-fiber connectors, terminals and branches. The third part is concerned with the major optoelectronic components encountered in optical-communication systems.This book will be of value to research scientists, engineers, and patent workers.

  7. Atom optics

    Balykin, V. I.; Jhe, W.

    1999-01-01

    Atom optics, in analogy to neutron and electron optics, deals with the realization of as a traditional elements, such as lenes, mirrors, beam splitters and atom interferometers, as well as a new 'dissipative' elements such as a slower and a cooler, which have no analogy in an another types of optics. Atom optics made the development of atom interferometer with high sensitivity for measurement of acceleration and rotational possible. The practical interest in atom optics lies in the opportunities to create atom microprobe with atom-size resolution and minimum damage of investigated objects. (Cho, G. S.)

  8. Optical interconnects

    Chen, Ray T

    2006-01-01

    This book describes fully embedded board level optical interconnect in detail including the fabrication of the thin-film VCSEL array, its characterization, thermal management, the fabrication of optical interconnection layer, and the integration of devices on a flexible waveguide film. All the optical components are buried within electrical PCB layers in a fully embedded board level optical interconnect. Therefore, we can save foot prints on the top real estate of the PCB and relieve packaging difficulty reduced by separating fabrication processes. To realize fully embedded board level optical

  9. Nonlinear optics

    Boyd, Robert W

    2013-01-01

    Nonlinear Optics is an advanced textbook for courses dealing with nonlinear optics, quantum electronics, laser physics, contemporary and quantum optics, and electrooptics. Its pedagogical emphasis is on fundamentals rather than particular, transitory applications. As a result, this textbook will have lasting appeal to a wide audience of electrical engineering, physics, and optics students, as well as those in related fields such as materials science and chemistry.Key Features* The origin of optical nonlinearities, including dependence on the polarization of light* A detailed treatment of the q

  10. Applied optics and optical design

    Conrady, Alexander Eugen

    1957-01-01

    ""For the optical engineer it is an indispensable work."" - Journal, Optical Society of America""As a practical guide this book has no rival."" - Transactions, Optical Society""A noteworthy contribution,"" - Nature (London)Part I covers all ordinary ray-tracing methods, together with the complete theory of primary aberrations and as much of higher aberration as is needed for the design of telescopes, low-power microscopes and simple optical systems. Chapters: Fundamental Equations, Spherical Aberration, Physical Aspect of Optical Images, Chromatic Aberration, Design of Achromatic Object-Glass

  11. Optical electronics

    Yariv, Amnon

    1991-01-01

    This classic text introduces engineering students to the first principles of major phenomena and devices of optoelectronics and optical communication technology. Yariv's "first principles" approach employs real-life examples and extensive problems. The text includes separate chapters on quantum well and semiconductor lasers, as well as phase conjugation and its applications. Optical fiber amplification, signal and noise considerations in optical fiber systems, laser arrays and distributed feedback lasers all are covered extensively in major sections within chapters.

  12. Optical computing.

    Stroke, G. W.

    1972-01-01

    Applications of the optical computer include an approach for increasing the sharpness of images obtained from the most powerful electron microscopes and fingerprint/credit card identification. The information-handling capability of the various optical computing processes is very great. Modern synthetic-aperture radars scan upward of 100,000 resolvable elements per second. Fields which have assumed major importance on the basis of optical computing principles are optical image deblurring, coherent side-looking synthetic-aperture radar, and correlative pattern recognition. Some examples of the most dramatic image deblurring results are shown.

  13. Optical Computing

    Other advantages of optics include low manufacturing costs, immunity to ... It is now possible to control atoms by trapping single photons in small, .... cement, and optical spectrum analyzers. ... risk of noise is further reduced, as light is immune to electro- ..... mode of operation including management of large multimedia.

  14. Quantum Optics

    Walls, D F

    2007-01-01

    Quantum Optics gives a comprehensive coverage of developments in quantum optics over the past years. In the early chapters the formalism of quantum optics is elucidated and the main techniques are introduced. These are applied in the later chapters to problems such as squeezed states of light, resonance fluorescence, laser theory, quantum theory of four-wave mixing, quantum non-demolition measurements, Bell's inequalities, and atom optics. Experimental results are used to illustrate the theory throughout. This yields the most comprehensive and up-to-date coverage of experiment and theory in quantum optics in any textbook. More than 40 exercises helps readers test their understanding and provide practice in quantitative problem solving.

  15. Optical biosensors.

    Damborský, Pavel; Švitel, Juraj; Katrlík, Jaroslav

    2016-06-30

    Optical biosensors represent the most common type of biosensor. Here we provide a brief classification, a description of underlying principles of operation and their bioanalytical applications. The main focus is placed on the most widely used optical biosensors which are surface plasmon resonance (SPR)-based biosensors including SPR imaging and localized SPR. In addition, other optical biosensor systems are described, such as evanescent wave fluorescence and bioluminescent optical fibre biosensors, as well as interferometric, ellipsometric and reflectometric interference spectroscopy and surface-enhanced Raman scattering biosensors. The optical biosensors discussed here allow the sensitive and selective detection of a wide range of analytes including viruses, toxins, drugs, antibodies, tumour biomarkers and tumour cells. © 2016 The Author(s). Published by Portland Press Limited on behalf of the Biochemical Society.

  16. Lagrangian optics

    Lakshminarayanan, Vasudevan; Thyagarajan, K

    2002-01-01

    Ingeometrical optics, light propagation is analyzed in terms of light rays which define the path of propagation of light energy in the limitofthe optical wavelength tending to zero. Many features oflight propagation can be analyzed in terms ofrays,ofcourse, subtle effects near foci, caustics or turning points would need an analysis based on the wave natureoflight. Allofgeometric optics can be derived from Fermat's principle which is an extremum principle. The counterpart in classical mechanics is of course Hamilton's principle. There is a very close analogy between mechanics ofparticles and optics oflight rays. Much insight (and useful results) can be obtained by analyzing these analogies. Asnoted by H. Goldstein in his book Classical Mechanics (Addison Wesley, Cambridge, MA, 1956), classical mechanics is only a geometrical optics approximation to a wave theory! In this book we begin with Fermat's principle and obtain the Lagrangian and Hamiltonian pictures of ray propagation through various media. Given the ...

  17. Quantum optics

    Drummond, P D [University of Queensland, St. Lucia, QLD (Australia).Physics Department

    1999-07-01

    Full text: Quantum optics in Australia has been an active research field for some years. I shall focus on recent developments in quantum and atom optics. Generally, the field as a whole is becoming more and more diverse, as technological developments drive experiments into new areas, and theorists either attempt to explain the new features, or else develop models for even more exotic ideas. The recent developments include quantum solitons, quantum computing, Bose-Einstein condensation, atom lasers, quantum cryptography, and novel tests of quantum mechanics. The talk will briefly cover current progress and outstanding problems in each of these areas. Copyright (1999) Australian Optical Society.

  18. Optical holography

    Collier, Robert J; Lin, Lawrence H

    1971-01-01

    Optical Holography deals with the use of optical holography to solve technical problems, with emphasis on the properties of holograms formed with visible light. Topics covered include the Fourier transform, propagation and diffraction, pulsed-laser holography, and optical systems with spherical lenses. A geometric analysis of point-source holograms is also presented, and holograms and hologram spatial filters formed with spatially modulated reference waves are described. This book is comprised of 20 chapters and begins with an introduction to concepts that are basic to understanding hologr

  19. Nonlinear optics

    Bloembergen, Nicolaas

    1996-01-01

    Nicolaas Bloembergen, recipient of the Nobel Prize for Physics (1981), wrote Nonlinear Optics in 1964, when the field of nonlinear optics was only three years old. The available literature has since grown by at least three orders of magnitude.The vitality of Nonlinear Optics is evident from the still-growing number of scientists and engineers engaged in the study of new nonlinear phenomena and in the development of new nonlinear devices in the field of opto-electronics. This monograph should be helpful in providing a historical introduction and a general background of basic ideas both for expe

  20. Quantum optics

    Agarwal, G. S

    2013-01-01

    ..., quantum metrology, spin squeezing, control of decoherence and many other key topics. Readers are guided through the principles of quantum optics and their uses in a wide variety of areas including quantum information science and quantum mechanics...

  1. Optical probe

    Denis, J.; Decaudin, J.M.

    1984-01-01

    The probe includes optical means of refractive index n, refracting an incident light beam from a medium with a refractive index n1>n and reflecting an incident light beam from a medium with a refractive index n2 [fr

  2. Quantum optics

    Andersen, Ulrik Lund

    2013-01-01

    Further sensitivity improvements are required before advanced optical interferometers will be able to measure gravitational waves. A team has now shown that introducing quantum squeezing of light may help to detect these elusive waves.......Further sensitivity improvements are required before advanced optical interferometers will be able to measure gravitational waves. A team has now shown that introducing quantum squeezing of light may help to detect these elusive waves....

  3. New organic materials for optics: optical storage and nonlinear optics

    Gan, F.

    1996-01-01

    New organic materials have received considerable attention recently, due to their easy preparation and different variety. The most application fields in optics are optical storage and nonlinear optics. In optical storage the organic dyes have been used for example, in record able and erasable compact disks (CD-R, CD-E) nonlinear optical effects, such as nonlinear optical absorption, second and third order optical absorption, second and third order optical nonlinearities, can be applied for making optical limiters, optical modulators, as well as laser second and third harmonic generations. Due to high value of optical absorption and optical nonlinearity organic materials are always used as thin films in optical integration. In this paper the new experimental results have been presented, and future development has been also discussed. (author)

  4. Statistical optics

    Goodman, J. W.

    This book is based on the thesis that some training in the area of statistical optics should be included as a standard part of any advanced optics curriculum. Random variables are discussed, taking into account definitions of probability and random variables, distribution functions and density functions, an extension to two or more random variables, statistical averages, transformations of random variables, sums of real random variables, Gaussian random variables, complex-valued random variables, and random phasor sums. Other subjects examined are related to random processes, some first-order properties of light waves, the coherence of optical waves, some problems involving high-order coherence, effects of partial coherence on imaging systems, imaging in the presence of randomly inhomogeneous media, and fundamental limits in photoelectric detection of light. Attention is given to deterministic versus statistical phenomena and models, the Fourier transform, and the fourth-order moment of the spectrum of a detected speckle image.

  5. Optical memory

    Mao, Samuel S; Zhang, Yanfeng

    2013-07-02

    Optical memory comprising: a semiconductor wire, a first electrode, a second electrode, a light source, a means for producing a first voltage at the first electrode, a means for producing a second voltage at the second electrode, and a means for determining the presence of an electrical voltage across the first electrode and the second electrode exceeding a predefined voltage. The first voltage, preferably less than 0 volts, different from said second voltage. The semiconductor wire is optically transparent and has a bandgap less than the energy produced by the light source. The light source is optically connected to the semiconductor wire. The first electrode and the second electrode are electrically insulated from each other and said semiconductor wire.

  6. Optical Spectroscopy

    Thyrhaug, Erling

    The work presented in this thesis is broadly concerned with how complexation reactions and molecular motion can be characterized with the standard techniques in optical spectroscopy. The thesis aims to show a relatively broad range of methods for probing physico-chemical properties in fluorophore...... information about chemical equilibria, kinetics and molecular motion by monitoring changes in optical properties of the system. The five presented research projects are largely unrelated to each other both in aim and in what property is probed, however they are all connected in that they are fluorophore...... reactions by optical spectroscopy. In project 1 simple steady-state absorption and fluorescence spectroscopy is used to determine the stoichiometries and equilibrium constants in the inclusion complex formation between cyclodextrins and derivatives of the water-insoluble oligo(phenylene vinylene) in aqueous...

  7. Semiconductor Optics

    Klingshirn, Claus F

    2012-01-01

    This updated and enlarged new edition of Semiconductor Optics provides an introduction to and an overview of semiconductor optics from the IR through the visible to the UV, including linear and nonlinear optical properties, dynamics, magneto and electrooptics, high-excitation effects and laser processes, some applications, experimental techniques and group theory. The mathematics is kept as elementary as possible, sufficient for an intuitive understanding of the experimental results and techniques treated. The subjects covered extend from physics to materials science and optoelectronics. Significantly updated chapters add coverage of current topics such as electron hole plasma, Bose condensation of excitons and meta materials. Over 120 problems, chapter introductions and a detailed index make it the key textbook for graduate students in physics. The mathematics is kept as elementary as possible, sufficient for an intuitive understanding of the experimental results and techniques treated. The subjects covered ...

  8. Statistical optics

    Goodman, Joseph W

    2015-01-01

    This book discusses statistical methods that are useful for treating problems in modern optics, and the application of these methods to solving a variety of such problems This book covers a variety of statistical problems in optics, including both theory and applications.  The text covers the necessary background in statistics, statistical properties of light waves of various types, the theory of partial coherence and its applications, imaging with partially coherent light, atmospheric degradations of images, and noise limitations in the detection of light. New topics have been introduced i

  9. Optical dosimeter

    Drukaroff, I.; Fishman, R.

    1984-01-01

    A reflecting optical dosimeter is a thin block of optical material having an input light pipe at one corner and an output light pipe at another corner, arranged so that the light path includes several reflections off the edges of the block to thereby greatly extend its length. In a preferred embodiment, one corner of the block is formed at an angle so that after the light is reflected several times between two opposite edges, it is then reflected several more times between the other two edges

  10. Reflective optics

    Korsch, Dietrich

    1991-01-01

    This is the first book dedicated exclusively to all-reflective imaging systems. It is a teaching tool as well as a practical design tool for anyone who specializes in optics, particularly for those interested in telescopes, infrared, and grazing-incidence systems. The first part of the book describes a unified geometric optical theory of all-reflective imaging systems (from near-normal to grazing incidence) developed from basic principles. The second part discusses correction methods and a multitude of closed-form solutions of well-corrected systems, supplemented with many conventional and unc

  11. Quantum optics

    Flytzanis, C.

    1988-01-01

    The 1988 progress report of the Quantum Optics laboratory (Polytechnic School, France) is presented. The research program is focused on the behavior of dense and dilute materials submitted to short and high-intensity light radiation fields. Nonlinear optics techniques, with time and spatial resolution, are developed. An important research activity concerns the investigations on the interactions between the photon beams and the inhomogeneous or composite materials, as well as the artificial microstructures. In the processes involving molecular beams and surfaces, the research works on the photophysics of surfaces and the molecule-surface interactions, are included [fr

  12. Diophantine Optics

    Rouan, D.

    2016-09-01

    What I call Diophantine optics is the exploitation in optics of some remarkable algebraic relations between powers of integers. The name comes from Diophantus of Alexandria, a greek mathematician, known as the father of algebra. He studied polynomial equations with integer coefficients and integer solutions, called diophantine equations. Since constructive or destructive interferences are playing with optical path differences which are multiple integer (odd or even) of λ/2 and that the complex amplitude is a highly non-linear function of the optical path difference (or equivalently of the phase), one can understand that any Taylor development of this amplitude implies powers of integers. This is the link with Diophantine equations. We show how, especially in the field of interferometry, remarkable relations between powers of integers can help to solve several problems, such as achromatization of a phase shifter or deep nulling efficiency. It appears that all the research that was conducted in this frame of thinking, relates to the field of detection of exoplanets, a very active domain of astrophysics today.

  13. Optical metrology

    Gåsvik, Kjell J

    2003-01-01

    New material on computerized optical processes, computerized ray tracing, and the fast Fourier transform, Bibre-Bragg sensors, and temporal phase unwrapping.* New introductory sections to all chapters.* Detailed discussion on lasers and laser principles, including an introduction to radiometry and photometry.* Thorough coverage of the CCD camera.

  14. Optical geometry

    Robinson, I.; Trautman, A.

    1988-01-01

    The geometry of classical physics is Lorentzian; but weaker geometries are often more appropriate: null geodesics and electromagnetic fields, for example, are well known to be objects of conformal geometry. To deal with a single null congruence, or with the radiative electromagnetic fields associated with it, even less is needed: flag geometry for the first, optical geometry, with which this paper is chiefly concerned, for the second. The authors establish a natural one-to-one correspondence between optical geometries, considered locally, and three-dimensional Cauchy-Riemann structures. A number of Lorentzian geometries are shown to be equivalent from the optical point of view. For example the Goedel universe, the Taub-NUT metric and Hauser's twisting null solution have an optical geometry isomorphic to the one underlying the Robinson congruence in Minkowski space. The authors present general results on the problem of lifting a CR structure to a Lorentz manifold and, in particular, to Minkowski space; and exhibit the relevance of the deviation form to this problem

  15. Optical Computing

    Optical computing technology is, in general, developing in two directions. One approach is ... current support in many places, with private companies as well as governments in several countries encouraging such research work. For example, much ... which enables more information to be carried and data to be processed.

  16. Optical Coherence and Quantum Optics

    Mandel, Leonard

    1995-01-01

    This book presents a systematic account of optical coherence theory within the framework of classical optics, as applied to such topics as radiation from sources of different states of coherence, foundations of radiometry, effects of source coherence on the spectra of radiated fields, coherence theory of laser modes, and scattering of partially coherent light by random media. The book starts with a full mathematical introduction to the subject area and each chapter concludes with a set of exercises. The authors are renowned scientists and have made substantial contributions to many of the topi

  17. Soft optics in intelligent optical networks

    Shue, Chikong; Cao, Yang

    2001-10-01

    In addition to the recent advances in Hard-optics that pushes the optical transmission speed, distance, wave density and optical switching capacity, Soft-optics provides the necessary intelligence and control software that reduces operational costs, increase efficiency, and enhances revenue generating services by automating optimal optical circuit placement and restoration, and enabling value-added new services like Optical VPN. This paper describes the advances in 1) Overall Hard-optics and Soft-optics 2) Layered hierarchy of Soft-optics 3) Component of Soft-optics, including hard-optics drivers, Management Soft-optics, Routing Soft-optics and System Soft-optics 4) Key component of Routing and System Soft-optics, namely optical routing and signaling (including UNI/NNI and GMPLS signaling). In summary, the soft-optics on a new generation of OXC's enables Intelligent Optical Networks to provide just-in-time service delivery and fast restoration, and real-time capacity management that eliminates stranded bandwidth. It reduces operational costs and provides new revenue opportunities.

  18. Optical Ethernet

    Chan, Calvin C. K.; Lam, Cedric F.; Tsang, Danny H. K.

    2005-09-01

    Call for Papers: Optical Ethernet The Journal of Optical Networking (JON) is soliciting papers for a second feature issue on Optical Ethernet. Ethernet has evolved from a LAN technology connecting desktop computers to a universal broadband network interface. It is not only the vehicle for local data connectivity but also the standard interface for next-generation network equipment such as video servers and IP telephony. High-speed Ethernet has been increasingly assuming the volume of backbone network traffic from SONET/SDH-based circuit applications. It is clear that IP has become the universal network protocol for future converged networks, and Ethernet is becoming the ubiquitous link layer for connectivity. Network operators have been offering Ethernet services for several years. Problems and new requirements in Ethernet service offerings have been captured through previous experience. New study groups and standards bodies have been formed to address these problems. This feature issue aims at reviewing and updating the new developments and R&D efforts of high-speed Ethernet in recent years, especially those related to the field of optical networking. Scope of Submission The scope of the papers includes, but is not limited to, the following: Ethernet PHY development 10-Gbit Ethernet on multimode fiber Native Ethernet transport and Ethernet on legacy networks EPON Ethernet OAM Resilient packet ring (RPR) and Ethernet QoS definition and management on Ethernet Ethernet protection switching Circuit emulation services on Ethernet Transparent LAN service development Carrier VLAN and Ethernet Ethernet MAC frame expansion Ethernet switching High-speed Ethernet applications Economic models of high-speed Ethernet services Ethernet field deployment and standard activities To submit to this special issue, follow the normal procedure for submission to JON, indicating "Optical Ethernet feature" in the "Comments" field of the online submission form. For all other questions

  19. Optical Communication over Plastic Optical Fibers Integrated Optical Receiver Technology

    Atef, Mohamed

    2013-01-01

    This book presents high-performance data transmission over plastic optical fibers (POF) using integrated optical receivers having good properties with multilevel modulation, i.e. a higher sensitivity and higher data rate transmission over a longer plastic optical fiber length. Integrated optical receivers and transmitters with high linearity are introduced for multilevel communication. For binary high-data rate transmission over plastic optical fibers, an innovative receiver containing an equalizer is described leading also to a high performance of a plastic optical fiber link. The cheap standard PMMA SI-POF (step-index plastic optical fiber) has the lowest bandwidth and the highest attenuation among multimode fibers. This small bandwidth limits the maximum data rate which can be transmitted through plastic optical fibers. To overcome the problem of the plastic optical fibers high transmission loss, very sensitive receivers must be used to increase the transmitted length over POF. The plastic optical fiber li...

  20. Optical gyroscope

    Seifollahi, Alireza

    It is said that future of the world is based on space exploration which leads us to think more about low cost and light weight instruments. Cheap and sensitive instruments should be de-signed and replace the expensive ones. One of the required instruments in space ships is gyroscope controls the direction of space ship. In this article I am going to give an idea to use optical properties in a new gyroscope which will be cheaper as well as more sensitive in com-pare with most of the being used normal gyroscope nowadays. This instrument uses an optical system to measure the angular changes in the direction of a space craft movements in any of the three axels. Any movement, even very small one, will move a crystal bulb which is lashed by some narrow elastic bands in a fixed box surrounded by three optical sources and light meters. Light meters measure the attitude and the angel of changes in the light beams going through the bulb which is related to the amount of changes in the space craft directions. The system will be very sensitive even against movement around its access. As an electro digital device in connection to a Main Process Unit (MPU) it can be used in Stability Augmentation System (SAS) in a space ship. The sensitivity rate of the instrument will be based on the quality and sensitivity of the light meters.

  1. Foveated optics

    Bryant, Kyle R.

    2016-05-01

    Foveated imaging can deliver two different resolutions on a single focal plane, which might inexpensively allow more capability for military systems. The following design study results provide starting examples, lessons learned, and helpful setup equations and pointers to aid the lens designer in any foveated lens design effort. Our goal is to put robust sensor in a small package with no moving parts, but still be able to perform some of the functions of a sensor in a moving gimbal. All of the elegant solutions are out (for various reasons). This study is an attempt to see if lens designs can solve this problem and realize some gains in performance versus cost for airborne sensors. We determined a series of design concepts to simultaneously deliver wide field of view and high foveal resolution without scanning or gimbals. Separate sensors for each field of view are easy and relatively inexpensive, but lead to bulky detectors and electronics. Folding and beam-combining of separate optical channels reduces sensor footprint, but induces image inversions and reduced transmission. Entirely common optics provide good resolution, but cannot provide a significant magnification increase in the foveal region. Offsetting the foveal region from the wide field center may not be physically realizable, but may be required for some applications. The design study revealed good general guidance for foveated optics designs with a cold stop. Key lessons learned involve managing distortion, telecentric imagers, matching image inversions and numerical apertures between channels, reimaging lenses, and creating clean resolution zone splits near internal focal planes.

  2. Nonimaging optics

    Winston, Roland

    1991-03-01

    Various uses of nonimaging concentrators and advances in the field of nonimaging optics are discussed. A nonimaging concentrator acts as a type of funnel for light by collecting and intensifying radiation far better than a lens or mirror would. It thus has found useful applications in fields ranging from high-energy physics to solar energy. The history of the field of nonimaging optics is traced, beginning with the design of the first compound parabolic concentrators in the mid-1960s. It is noted that at present there are two known ways to design nonimaging concentrators: the edge-ray method and the geometric vector flux approach. The use of nonimaging optical devices in the design of nontracking solar concentrators is traced. It is noted that the upper limit of concentration turns out to be about 46,000 times the intensity of sunlight at the surface of the earth. Methods used to maximize this concentration are discussed. The development and use of a solar-pumped laser which would have applications in satellite communications are discussed.

  3. Chirality in nonlinear optics and optical switching

    Meijer, E.W.; Feringa, B.L.

    1993-01-01

    Chirality in molecular opto-electronics is limited sofar to the use of optically active liquid crystals and a number of optical phenomena are related to the helical macroscopic structure obtained by using one enantiomer, only. In this paper, the use of chirality in nonlinear optics and optical

  4. Optical twisters

    Daria, Vincent R.; Palima, Darwin; Glückstad, Jesper

    2010-01-01

    singularity at the centre and produces a dark region surrounded by a ring-shaped light pattern. For LG-beams, the ring radius is proportional to the degree of helicity or topological charge of the beam. The beam we describe here is initially characterized with an apodized helical phase front at the outskirts....... Such beams can be applied to fundamental studies of light and atoms such as in quantum entanglement of the OAM, toroidal traps for cold atoms and for optical manipulation of microscopic particles....

  5. Optical microphone

    Veligdan, J.T.

    2000-01-11

    An optical microphone includes a laser and beam splitter cooperating therewith for splitting a laser beam into a reference beam and a signal beam. A reflecting sensor receives the signal beam and reflects it in a plurality of reflections through sound pressure waves. A photodetector receives both the reference beam and reflected signal beam for heterodyning thereof to produce an acoustic signal for the sound waves. The sound waves vary the local refractive index in the path of the signal beam which experiences a Doppler frequency shift directly analogous with the sound waves.

  6. EDITORIAL: Optical orientation Optical orientation

    SAME ADDRESS *, Yuri; Landwehr, Gottfried

    2008-11-01

    priority of the discovery in the literature, which was partly caused by the existence of the Iron Curtain. I had already enjoyed contact with Boris in the 1980s when the two volumes of Landau Level Spectroscopy were being prepared [2]. He was one of the pioneers of magneto-optics in semiconductors. In the 1950s the band structure of germanium and silicon was investigated by magneto-optical methods, mainly in the United States. No excitonic effects were observed and the band structure parameters were determined without taking account of excitons. However, working with cuprous oxide, which is a direct semiconductor with a relative large energy gap, Zakharchenya and his co-worker Seysan showed that in order to obtain correct band structure parameters, it is necessary to take excitons into account [3]. About 1970 Boris started work on optical orientation. Early work by Hanle in Germany in the 1920s on the depolarization of luminescence in mercury vapour by a transverse magnetic field was not appreciated for a long time. Only in the late 1940s did Kastler and co-workers in Paris begin a systematic study of optical pumping, which led to the award of a Nobel prize. The ideas of optical pumping were first applied by Georges Lampel to solid state physics in 1968. He demonstrated optical orientation of free carriers in silicon. The detection method was nuclear magnetic resonance; optically oriented free electrons dynamically polarized the 29Si nuclei of the host lattice. The first optical detection of spin orientation was demonstrated by with the III-V semiconductor GaSb by Parsons. Due to the various interaction mechanisms of spins with their environment, the effects occurring in semiconductors are naturally more complex than those in atoms. Optical detection is now the preferred method to detect spin alignment in semiconductors. The orientation of spins in crystals pumped with circularly polarized light is deduced from the degree of circular polarization of the recombination

  7. Effect of impurities on microstructure and structural propertiesof the as-cast and treated Al-Zn alloys

    Douniazed Lamrous

    2014-03-01

    Full Text Available The microstructure of two Al-Zn alloys (with 10 and 30 wt.%Zn content produced by melting in the high frequency induction furnace were investigated by means of scanning electron microscopy (SEM, energy dispersive X-ray (EDX spectroscopy, X-ray diffraction (XRD analysis and the microhardness tests. The results indicate that the presence of iron impurity causes the formation of eutectic (Al,Zn3Fe in both alloys. The presence of the silicon impurity results in the formation of the phase separation in the Al-10%Zn as-cast alloy. The columnar to equiaxed transition was produced only in the Al-30%Zn as-cast alloy. The Vickers microhardness is higher in the equiaxed zone than in the columnar to equiaxed transition (CET zone. The presence of iron causes intermetallic phase formation (Al, Fe, Si3,6Zn in the Al-30%Zn as-cast alloy enabling an increase in the lattice parameter. After a homogenization treatment, the microstructure of Al-Zn treated alloys consists only of α dendrites and stable eutectic phase.

  8. Advances in nonlinear optics

    Chen, Xianfeng; Zeng, Heping; Guo, Qi; She, Weilong

    2015-01-01

    This book presents an overview of the state of the art of nonlinear optics from weak light nonlinear optics, ultrafast nonlinear optics to electro-optical theory and applications. Topics range from the fundamental studies of the interaction between matter and radiation to the development of devices, components, and systems of tremendous commercial interest for widespread applications in optical telecommunications, medicine, and biotechnology.

  9. Reflective Optics for Microdiffraction

    Ice, G.E.

    2007-01-01

    Nondispersive optics are essential for emerging microdiffraction and nanobeam research. Here we describe extensions to traditional Kirkpatrick Baez optics required to develop nondispersive microdiffraction and nanoprobe optics with 1-10 nm spatial resolution

  10. Coding for optical channels

    Djordjevic, Ivan; Vasic, Bane

    2010-01-01

    This unique book provides a coherent and comprehensive introduction to the fundamentals of optical communications, signal processing and coding for optical channels. It is the first to integrate the fundamentals of coding theory and optical communication.

  11. Quantum optics for experimentalists

    Ou, Zhe-Yu Jeff

    2017-01-01

    This book on quantum optics is from the point of view of an experimentalist. It approaches the theory of quantum optics with the language of optical modes of classical wave theory, with which experimentalists are most familiar.

  12. Tunable laser optics

    Duarte, FJ

    2015-01-01

    This Second Edition of a bestselling book describes the optics and optical principles needed to build lasers. It also highlights the optics instrumentation necessary to characterize laser emissions and focuses on laser-based optical instrumentation. The book emphasizes practical and utilitarian aspects of relevant optics including the essential theory. This revised, expanded, and improved edition contains new material on tunable lasers and discusses relevant topics in quantum optics.

  13. Optical absorption measurement system

    Draggoo, V.G.; Morton, R.G.; Sawicki, R.H.; Bissinger, H.D.

    1989-01-01

    This patent describes a non-intrusive method for measuring the temperature rise of optical elements under high laser power optical loading to determine the absorption coefficient. The method comprises irradiating the optical element with a high average power laser beam, viewing the optical element with an infrared camera to determine the temperature across the optical element and calculating the absorption of the optical element from the temperature

  14. Fibre-optic communications

    Lecoy, Pierre

    2010-01-01

    This book describes in a comprehensive manner the components and systems of fiber optic communications and networks. The first section explains the theory of multimode and single-mode fibers, then the technological features, including manufacturing, cabling, and connecting. The second section describes the various components (passive and active optical components, integrated optics, opto-electronic transmitters and receivers, and optical amplifiers) used in fiber optic systems. Finally, the optical transmission system design is explained, and applications to optical networks and fiber optic se

  15. Intelligent Optics Laboratory

    Federal Laboratory Consortium — The Intelligent Optics Laboratory supports sophisticated investigations on adaptive and nonlinear optics; advancedimaging and image processing; ground-to-ground and...

  16. Optical Remote Sensing Laboratory

    Federal Laboratory Consortium — The Optical Remote Sensing Laboratory deploys rugged, cutting-edge electro-optical instrumentation for the collection of various event signatures, with expertise in...

  17. FIBER OPTICS: Fibre optics: Forty years later

    Dianov, Evgenii M.

    2010-01-01

    This paper presents a brief overview of the state of the art in fibre optics and its main applications: optical fibre communications, fibre lasers and fibre sensors for various physical property measurements. The future of fibre optics and the status of this important area of the modern technology in Russia are discussed.

  18. Optical extensometer

    Walker, Ray A.; Reich, Fred R.; Russell, James T.

    1978-01-01

    An optical extensometer is described using sequentially pulsed light beams for measuring the dimensions of objects by detecting two opposite edges of the object without contacting the object. The light beams may be of different distinguishable light characteristics, such as polarization or wave length, and are time modulated in an alternating manner at a reference frequency. The light characteristics are of substantially the same total light energy and are distributed symmetrically. In the preferred embodiment two light beam segments of one characteristic are on opposite sides of a middle segment of another characteristic. As a result, when the beam segments are scanned sequentially across two opposite edges of the object, they produce a readout signal at the output of a photoelectric detector that is compared with the reference signal by a phase comparator to produce a measurement signal with a binary level transition when the light beams cross an edge. The light beams may be of different cross sectional geometries, including two superimposed and concentric circular beam cross sections of different diameter, or two rectangular cross sections which intersect with each other substantially perpendicular so only their central portions are superimposed. Alternately, a row of three light beams can be used including two outer beams on opposite sides and separate from a middle beam. The three beams may all be of the same light characteristic. However it is preferable that the middle beam be of a different characteristic but of the same total energy as the two outer beams.

  19. Light Optics for Optical Stochastic Cooling

    Andorf, Matthew [NICADD, DeKalb; Lebedev, Valeri [Fermilab; Piot, Philippe [NICADD, DeKalb; Ruan, Jinhao [Fermilab

    2016-06-01

    In Optical Stochastic Cooling (OSC) radiation generated by a particle in a "pickup" undulator is amplified and transported to a downstream "kicker" undulator where it interacts with the same particle which radiated it. Fermilab plans to carry out both passive (no optical amplifier) and active (optical amplifier) tests of OSC at the Integrable Optics Test Accelerator (IOTA) currently in construction*. The performace of the optical system is analyzed with simulations in Synchrotron Radiation Workshop (SRW) accounting for the specific temporal and spectral properties of undulator radiation and being augmented to include dispersion of lens material.

  20. Applications of Nano-optics.

    Zhou, Changhe; Fainman, Yeshaiahu; Sheng, Yunlong

    2011-11-01

    As nanoscale fabrication techniques advance, nano-optics continues to offer enabling solutions to numerous practical applications for information optics. This Applied Optics feature issue focuses on the Application of Nano-optics. © 2011 Optical Society of America

  1. Optic Nerve Pit

    ... Conditions Frequently Asked Questions Español Condiciones Chinese Conditions Optic Nerve Pit What is optic nerve pit? An optic nerve pit is a ... may be seen in both eyes. How is optic pit diagnosed? If the pit is not affecting ...

  2. Integrated Optical Circuit Engineering

    Sriram, S.

    1985-04-01

    Implementation of single-mode optical fiber systems depends largely on the availability of integrated optical components for such functions as switching, multiplexing, and modulation. The technology of integrated optics is maturing very rapidly, and its growth justifies the optimism that now exists in the optical community.

  3. Fiber Singular Optics

    A. V. Volyar

    2002-01-01

    The present review is devoted to the optical vortex behavior both in free space and optical fibers. The processes of the vortex transformations in perturbed optical fibers are analyzed on the base of the operator of the spin – orbit interaction in order to forecast the possible ways of manufacturing the vortex preserving fibers and their applications in supersensitive optical devices.

  4. Optics for dummies

    Duree, Galen C

    2011-01-01

    The easy way to shed light on Optics In general terms, optics is the science of light. More specifically, optics is a branch of physics that describes the behavior and properties of light?including visible, infrared, and ultraviolet?and the interaction of light with matter. Optics For Dummies gives you an approachable introduction to optical science, methods, and applications. You'll get plain-English explanations of the nature of light and optical effects; reflection, refraction, and diffraction; color dispersion; optical devices, industrial, medical, and military applicatio

  5. Optical XOR gate

    Vawter, G. Allen

    2013-11-12

    An optical XOR gate is formed as a photonic integrated circuit (PIC) from two sets of optical waveguide devices on a substrate, with each set of the optical waveguide devices including an electroabsorption modulator electrically connected in series with a waveguide photodetector. The optical XOR gate utilizes two digital optical inputs to generate an XOR function digital optical output. The optical XOR gate can be formed from III-V compound semiconductor layers which are epitaxially deposited on a III-V compound semiconductor substrate, and operates at a wavelength in the range of 0.8-2.0 .mu.m.

  6. Fiber optic connector

    Rajic, Slobodan; Muhs, Jeffrey D.

    1996-01-01

    A fiber optic connector and method for connecting composite materials within which optical fibers are imbedded. The fiber optic connector includes a capillary tube for receiving optical fibers at opposing ends. The method involves inserting a first optical fiber into the capillary tube and imbedding the unit in the end of a softened composite material. The capillary tube is injected with a coupling medium which subsequently solidifies. The composite material is machined to a desired configuration. An external optical fiber is then inserted into the capillary tube after fluidizing the coupling medium, whereby the optical fibers are coupled.

  7. Measurement of optical glasses

    Nicolau-Rebigan, S.

    1978-11-01

    The possibilities of measurement of the optical glasses parameters needed in building optical devices especially in lasers devices are presented. In the first chapter the general features of the main optical glasses as well as the modalities of obtaining them are given. Chapter two defines the optical glass parameters, and the third chapter describes the measuring methods of the optical glass parameters. Finally, the conclusions which point out the utilization of this paper are presented. (author)

  8. Optical tomography of tissues

    Zimnyakov, D A; Tuchin, Valerii V

    2002-01-01

    Methods of optical tomography of biological tissues are considered, which include pulse-modulation and frequency-modulation tomography, diffusion tomography with the use of cw radiation sources, optical coherent tomography, speckle-correlation tomography of nonstationary media, and optoacoustic tomography. The method for controlling the optical properties of tissues is studied from the point of view of increasing a probing depth in optical coherent tomography. The modern state and prospects of the development of optical tomography are discussed. (review)

  9. Optical imaging and spectroscopy

    Brady, David J

    2009-01-01

    An essential reference for optical sensor system design This is the first text to present an integrated view of the optical and mathematical analysis tools necessary to understand computational optical system design. It presents the foundations of computational optical sensor design with a focus entirely on digital imaging and spectroscopy. It systematically covers: Coded aperture and tomographic imaging Sampling and transformations in optical systems, including wavelets and generalized sampling techniques essential to digital system analysis Geometric, wave, and statis

  10. Direct Growth of III-Nitride Nanowire-Based Yellow Light-Emitting Diode on Amorphous Quartz Using Thin Ti Interlayer

    Prabaswara, Aditya; Min, Jung-Wook; Zhao, Chao; Janjua, Bilal; Zhang, Daliang; Albadri, Abdulrahman M.; Alyamani, Ahmed Y.; Ng, Tien Khee; Ooi, Boon S.

    2018-01-01

    .6 V, on an amorphous quartz substrate. We achieved ~ 40% transparency across the visible wavelength while maintaining electrical conductivity by employing a TiN/Ti interlayer on quartz as a translucent conducting layer. The nanowire-on-quartz LED emits

  11. Current gain above 10 in sub-10 nm base III-Nitride tunneling hot electron transistors with GaN/AlN emitter

    Yang, Zhichao, E-mail: zcyang.phys@gmail.com; Zhang, Yuewei; Krishnamoorthy, Sriram; Nath, Digbijoy N. [Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210 (United States); Khurgin, Jacob B. [Department of Electrical and Computer Engineering, Johns Hopkins University, Baltimore, Maryland 21218 (United States); Rajan, Siddharth [Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210 (United States); Department of Materials Science and Engineering, The Ohio State University, Columbus, Ohio 43210 (United States)

    2016-05-09

    We report on a tunneling hot electron transistor amplifier with common-emitter current gain greater than 10 at a collector current density in excess of 40 kA/cm{sup 2}. The use of a wide-bandgap GaN/AlN (111 nm/2.5 nm) emitter was found to greatly improve injection efficiency of the emitter and reduce cold electron leakage. With an ultra-thin (8 nm) base, 93% of the injected hot electrons were collected, enabling a common-emitter current gain up to 14.5. This work improves understanding of the quasi-ballistic hot electron transport and may impact the development of high speed devices based on unipolar hot electron transport.

  12. Pr4N2S3 and Pr4N2Se3: two non-isostructural praseodymium(iii) nitride chalcogenides

    Lissner, Falk; Schleid, Thomas

    2005-01-01

    The non-isostructural nitride chalcogenides of praseodymium, Pr 4 N 2 S 3 and Pr 4 N 2 Se 3 , are formed by the reaction of the praseodymium metal with sodium azide (NaN 3 ), praseodymium trihalide (PrX 3 ; X = Cl, Br, I) and the respective chalcogen (sulfur or selenium) at 900 C in evacuated silica ampoules after seven days. Both crystallize monoclinically in space group C2/c (Pr 4 N 2 S 3 : a = 1788.57(9), b = 986.04(5), c = 1266.49(6) pm, β = 134.546(7) , Z = 8; Pr 4 N 2 Se 3 : a = 1311.76(7), b = 1017.03(5), c = 650.42(3) pm, β = 90.114(6) , Z = 4). The crystal structures of both compounds show a layered construction, dominated by N 3- -centred (Pr 3+ ) 4 tetrahedra which share a common edge first. Continuing linkage of the so resulting bitetrahedral [N 2 Pr 6 ] 12+ units via the non-connected vertices to layers according to [stack ∞ 2 ]{[N(Pr) 2/2 e (Pr') 2/2 v ] 3+ } forms different kinds of tetrahedral nets which can be described as layers consisting of ''four- and eight-rings'' for Pr 4 N 2 S 3 and as layers of ''six-rings'' for Pr 4 N 2 Se 3 . Whereas the crystal structure of Pr 4 N 2 S 3 exhibits four different Pr 3+ cations with coordination numbers of six (2 x) and seven (2 x) against N 3- and S 2- , the number of cations in the nitride selenide (Pr 4 N 2 Se 3 ) is reduced to half (Pr1 and Pr2) also having six- and sevenfold anionic coordination spheres. Further motifs for the connection of [NM 4 ] 9+ tetrahedra in crystal structures of nitride chalcogenides and halides of the rare-earth elements with ratios of N: M = 1: 2 are presented and discussed. (Abstract Copyright [2005], Wiley Periodicals, Inc.) [de

  13. III-Nitride, SiC and Diamond Materials for Electronic Devices. Symposium Held April 8-12 1996, San Francisco, California, U.S.A. Volume 423.

    1996-12-01

    Haustein , J. J. Song, and B. Goldenberg, Appl. Phys. Lett. 66, 3492 (1995). 11. Y. Koide, H. Itoh, M. R. Khan, K. Hiramtu, N. Sawaki, and 1. Akasaki, J...12]. Herman Lock and Gary E. Maciel, J. Mater. Res. 7 (10), 2791-7 (1992). [13]. M. Hoinkis, E. D. Tober, R. L. White etal., Appl. Phys. Lett. 61...Chem. Solids, 25, 1369 (1964). [2] L.Kleinman and J. C. Phillips, Phys. Rev. 116, 880 (1959); F. Herman , idid. 93, 1214 (1954). [3] L.Kleinman and J

  14. Small signal modulation characteristics of red-emitting (λ = 610 nm) III-nitride nanowire array lasers on (001) silicon

    Jahangir, Shafat; Frost, Thomas; Hazari, Arnab; Yan, Lifan; Stark, Ethan; LaMountain, Trevor; Millunchick, Joanna M.; Ooi, Boon S.; Bhattacharya, Pallab

    2015-01-01

    The small signal modulation characteristics of an InGaN/GaN nanowire array edge- emitting laser on (001) silicon are reported. The emission wavelength is 610 nm. Lattice matched InAlN cladding layers were incorporated in the laser heterostructure for better mode confinement. The suitability of the nanowire lasers for use in plastic fiber communication systems with direct modulation is demonstrated through their modulation bandwidth of f-3dB,max = 3.1 GHz, very low values of chirp (0.8 Å) and α-parameter, and large differential gain (3.1 × 10-17 cm2).

  15. Effect of the growth temperature and the AlN mole fraction on In incorporation and properties of quaternary III-nitride layers grown by molecular beam epitaxy

    Fernandez-Garrido, S.; Pereiro, J.; Munoz, E.; Calleja, E.; Redondo-Cubero, A.; Gago, R.; Bertram, F.; Christen, J.; Luna, E.; Trampert, A.

    2008-01-01

    Indium incorporation into wurtzite (0001)-oriented In x Al y Ga 1-x-y N layers grown by plasma-assisted molecular beam epitaxy was studied as a function of the growth temperature (565-635 deg. C) and the AlN mole fraction (0.01< y<0.27). The layer stoichiometry was determined by Rutherford backscattering spectrometry (RBS). RBS shows that indium incorporation decreased continuously with increasing growth temperature due to thermally enhanced dissociation of In-N bonds and for increasing AlN mole fractions. High resolution x-ray diffraction and transmission electron microscopy (TEM) measurements did not show evidence of phase separation. The mosaicity of the quaternary layers was found to be mainly determined by the growth temperature and independent on alloy composition within the range studied. However, depending on the AlN mole fraction, nanometer-sized composition fluctuations were detected by TEM. Photoluminescence spectra showed a single broad emission at room temperature, with energy and bandwidth S- and W-shaped temperature dependences typical of exciton localization by alloy inhomogeneities. Cathodoluminescence measurements demonstrated that the alloy inhomogeneities, responsible of exciton localization, occur on a lateral length scale below 150 nm, which is corroborated by TEM

  16. Small signal modulation characteristics of red-emitting (λ = 610 nm) III-nitride nanowire array lasers on (001) silicon

    Jahangir, Shafat

    2015-02-16

    The small signal modulation characteristics of an InGaN/GaN nanowire array edge- emitting laser on (001) silicon are reported. The emission wavelength is 610 nm. Lattice matched InAlN cladding layers were incorporated in the laser heterostructure for better mode confinement. The suitability of the nanowire lasers for use in plastic fiber communication systems with direct modulation is demonstrated through their modulation bandwidth of f-3dB,max = 3.1 GHz, very low values of chirp (0.8 Å) and α-parameter, and large differential gain (3.1 × 10-17 cm2).

  17. Design of optical switches by illusion optics

    Shoorian, H R; Abrishamian, M S

    2013-01-01

    In this paper, illusion optics theory is employed to form Bragg gratings in an optical waveguide in order to design an optical switch. By using an illusion device at a certain distance from the waveguide, the effective refractive index of the waveguide is remotely modulated, turning the waveguide into a distributed Bragg reflector (DBR) which blocks the waves at a stop band. By removing the illusion device, the waves propagate through the waveguide again. In addition, this method is used to remotely tune DBR optical properties such as resonant frequency and bandwidth in a wide range, which leads to a tunable filter for optical switching applications. Finally, using an illusion device at a distance, an optical cavity is created by inserting defects remotely in a DBR without any physical damage in the primary device. (paper)

  18. Design of optical switches by illusion optics

    Shoorian, H. R.; Abrishamian, M. S.

    2013-05-01

    In this paper, illusion optics theory is employed to form Bragg gratings in an optical waveguide in order to design an optical switch. By using an illusion device at a certain distance from the waveguide, the effective refractive index of the waveguide is remotely modulated, turning the waveguide into a distributed Bragg reflector (DBR) which blocks the waves at a stop band. By removing the illusion device, the waves propagate through the waveguide again. In addition, this method is used to remotely tune DBR optical properties such as resonant frequency and bandwidth in a wide range, which leads to a tunable filter for optical switching applications. Finally, using an illusion device at a distance, an optical cavity is created by inserting defects remotely in a DBR without any physical damage in the primary device.

  19. Optical near-fields & nearfield optics

    Meixner, Alfred J; Leiderer, Paul

    2014-01-01

    Optical methods provide exceedingly powerful tools in science and technology for measuring, analyzing and manipulating, from optical microscopy and spectroscopy to the characterization of ultrafast processes by femtosecond pulses and the modification of materials by intense laser radiation. However, when it comes to applications in the nanometer-regime, the conventional optical techniques suffer from the resolution limit – formulated by Ernst Abbe one and a half centuries ago – that light can...

  20. Optical CDMA components requirements

    Chan, James K.

    1998-08-01

    Optical CDMA is a complementary multiple access technology to WDMA. Optical CDMA potentially provides a large number of virtual optical channels for IXC, LEC and CLEC or supports a large number of high-speed users in LAN. In a network, it provides asynchronous, multi-rate, multi-user communication with network scalability, re-configurability (bandwidth on demand), and network security (provided by inherent CDMA coding). However, optical CDMA technology is less mature in comparison to WDMA. The components requirements are also different from WDMA. We have demonstrated a video transport/switching system over a distance of 40 Km using discrete optical components in our laboratory. We are currently pursuing PIC implementation. In this paper, we will describe the optical CDMA concept/features, the demonstration system, and the requirements of some critical optical components such as broadband optical source, broadband optical amplifier, spectral spreading/de- spreading, and fixed/programmable mask.

  1. Nonlinear Optics and Applications

    Abdeldayem, Hossin A. (Editor); Frazier, Donald O. (Editor)

    2007-01-01

    Nonlinear optics is the result of laser beam interaction with materials and started with the advent of lasers in the early 1960s. The field is growing daily and plays a major role in emerging photonic technology. Nonlinear optics play a major role in many of the optical applications such as optical signal processing, optical computers, ultrafast switches, ultra-short pulsed lasers, sensors, laser amplifiers, and many others. This special review volume on Nonlinear Optics and Applications is intended for those who want to be aware of the most recent technology. This book presents a survey of the recent advances of nonlinear optical applications. Emphasis will be on novel devices and materials, switching technology, optical computing, and important experimental results. Recent developments in topics which are of historical interest to researchers, and in the same time of potential use in the fields of all-optical communication and computing technologies, are also included. Additionally, a few new related topics which might provoke discussion are presented. The book includes chapters on nonlinear optics and applications; the nonlinear Schrodinger and associated equations that model spatio-temporal propagation; the supercontinuum light source; wideband ultrashort pulse fiber laser sources; lattice fabrication as well as their linear and nonlinear light guiding properties; the second-order EO effect (Pockels), the third-order (Kerr) and thermo-optical effects in optical waveguides and their applications in optical communication; and, the effect of magnetic field and its role in nonlinear optics, among other chapters.

  2. Latching micro optical switch

    Garcia, Ernest J; Polosky, Marc A

    2013-05-21

    An optical switch reliably maintains its on or off state even when subjected to environments where the switch is bumped or otherwise moved. In addition, the optical switch maintains its on or off state indefinitely without requiring external power. External power is used only to transition the switch from one state to the other. The optical switch is configured with a fixed optical fiber and a movable optical fiber. The movable optical fiber is guided by various actuators in conjunction with a latching mechanism that configure the switch in one position that corresponds to the on state and in another position that corresponds to the off state.

  3. Introduction to nonimaging optics

    Chaves, Julio

    2015-01-01

    Introduction to Nonimaging Optics covers the theoretical foundations and design methods of nonimaging optics, as well as key concepts from related fields. This fully updated, revised, and expanded Second Edition: Features a new and intuitive introduction with a basic description of the advantages of nonimaging opticsAdds new chapters on wavefronts for a prescribed output (irradiance or intensity), infinitesimal étendue optics (generalization of the aplanatic optics), and Köhler optics and color mixingIncorporates new material on the simultaneous multiple surface (SMS) design method in 3-D, int

  4. Miniature Optical Isolator, Phase I

    National Aeronautics and Space Administration — To address NASA's need for miniature optical isolators in atom interferometry applications, Physical Optics Corporation (POC) proposes to develop a miniature optical...

  5. A modular optical sensor

    Conklin, John Albert

    This dissertation presents the design of a modular, fiber-optic sensor and the results obtained from testing the modular sensor. The modular fiber-optic sensor is constructed in such manner that the sensor diaphragm can be replaced with different configurations to detect numerous physical phenomena. Additionally, different fiber-optic detection systems can be attached to the sensor. Initially, the modular sensor was developed to be used by university of students to investigate realistic optical sensors and detection systems to prepare for advance studies of micro-optical mechanical systems (MOMS). The design accomplishes this by doing two things. First, the design significantly lowers the costs associated with studying optical sensors by modularizing the sensor design. Second, the sensor broadens the number of physical phenomena that students can apply optical sensing techniques to in a fiber optics sensor course. The dissertation is divided into seven chapters covering the historical development of fiber-optic sensors, a theoretical overview of fiber-optic sensors, the design, fabrication, and the testing of the modular sensor developed in the course of this work. Chapter 1 discusses, in detail, how this dissertation is organized and states the purpose of the dissertation. Chapter 2 presents an historical overview of the development of optical fibers, optical pressure sensors, and fibers, optical pressure sensors, and optical microphones. Chapter 3 reviews the theory of multi-fiber optic detection systems, optical microphones, and pressure sensors. Chapter 4 presents the design details of the modular, optical sensor. Chapter 5 delves into how the modular sensor is fabricated and how the detection systems are constructed. Chapter 6 presents the data collected from the microphone and pressure sensor configurations of the modular sensor. Finally, Chapter 7 discusses the data collected and draws conclusions about the design based on the data collected. Chapter 7 also

  6. Optical Filter Assembly for Interplanetary Optical Communications

    Chen, Yijiang; Hemmati, Hamid

    2013-01-01

    Ground-based, narrow-band, high throughput optical filters are required for optical links from deep space. We report on the development of a tunable filter assembly that operates at telecommunication window of 1550 nanometers. Low insertion loss of 0.5 decibels and bandwidth of 90 picometers over a 2000 nanometers operational range of detectors has been achieved.

  7. Optical Airborne Tracker System

    National Aeronautics and Space Administration — The Optical Airborne Tracker System (OATS) is an airborne dual-axis optical tracking system capable of pointing at any sky location or ground target.  The objectives...

  8. Optic Nerve Disorders

    The optic nerve is a bundle of more than 1 million nerve fibers that carry visual messages. You have one connecting ... retina) to your brain. Damage to an optic nerve can cause vision loss. The type of vision ...

  9. Fiber Optics Technology.

    Burns, William E.

    1986-01-01

    Discusses various applications of fiber optics technology: information systems, industrial robots, medicine, television, transportation, and training. Types of jobs that will be available with fiber optics training (such as electricians and telephone cable installers and splicers) are examined. (CT)

  10. Fiber Optics Instrumentation Development

    Chan, Patrick Hon Man; Parker, Allen R., Jr.; Richards, W. Lance

    2010-01-01

    This is a general presentation of fiber optics instrumentation development work being conducted at NASA Dryden for the past 10 years and recent achievements in the field of fiber optics strain sensors.

  11. Nestor optical modules blackening

    Cordelli, M.; Rutili, A.; Trasatti, L.

    1998-09-01

    The optical modules (OM) containing the photomultiplier tubes (PM) for a deep sea neutrino telescope must be protected them from direct sunlight. The problem has been solved using a heat shrink plastic sheet with very good optical and mechanical properties

  12. Optical illusion: apogee development

    Elena, Chernyсhuk; Bazylevych, Viktoriya

    2015-01-01

    The article provides a classification of optical illusions performed by the authors. Briefly described each of the 11 identified species. Offered the variants using optical illusions in the urban environment, exterior and interior.

  13. The Scanning Optical Microscope.

    Sheppard, C. J. R.

    1978-01-01

    Describes the principle of the scanning optical microscope and explains its advantages over the conventional microscope in the improvement of resolution and contrast, as well as the possibility of producing a picture from optical harmonies generated within the specimen.

  14. Advanced digital optical communications

    Binh, Le Nguyen

    2015-01-01

    This book provides a fundamental understanding of digital communication applications in optical communication technologies. Emphasizing operation principles versus mathematical analysis, the Second Edition includes new coverage of superchannel optical transmission systems, metropolitan and long-haul optical systems and networks, and Nyquist pulse shaping and high spectral efficiency of optical transmission systems, as well as new homework problems and examples. Featuring theoretical foundations as well as practical case studies, the text focuses on enhancements to digital technologies that are

  15. Emerging Correlation Optics

    Angelsky, Oleg V.; Gbur, Gregory J.; Polyanskii, Peter

    2012-01-01

    This feature issue of Applied Optics contains a series of selected papers reflecting the state-of-the-art of correlation optics and showing synergetics between the theoretical background and experimental techniques.......This feature issue of Applied Optics contains a series of selected papers reflecting the state-of-the-art of correlation optics and showing synergetics between the theoretical background and experimental techniques....

  16. Progress in optics

    Wolf, Emil

    2009-01-01

    In the fourty-seven years that have gone by since the first volume of Progress in Optics was published, optics has become one of the most dynamic fields of science. The volumes in this series which have appeared up to now contain more than 300 review articles by distinguished research workers, which have become permanent records for many important developments.- Backscattering and Anderson localization of light- Advances in oliton manipulation in optical lattices- Fundamental quantum noise in optical amplification- Invisibility cloaks

  17. Progress in optics

    Wolf, Emil

    2015-01-01

    The Progress in Optics series contains more than 300 review articles by distinguished research workers, which have become permanent records for many important developments, helping optical scientists and optical engineers stay abreast of their fields. Comprehensive, in-depth reviewsEdited by the leading authority in the field

  18. Pappus in optical space

    Koenderink, Jan J.; van Doorn, Andrea J.; Kappers, Astrid M L; Todd, James T.

    Optical space differs from physical space. The structure of optical space has generally been assumed to be metrical. In contradistinction, we do not assume any metric, but only incidence relations (i.e., we assume that optical points and lines exist and that two points define a unique line, and two

  19. Pappus in optical space

    Koenderink, J.J.; Doorn, A.J. van; Kappers, A.M.L.; Todd, J.T.

    2002-01-01

    Optical space differs from physical space. The structure of optical space has generallybeen assumed to be metrical. In contradistinction,we do not assume anymetric, but only incidence relations (i.e., we assume that optical points and lines exist and that two points define a unique line, and two

  20. Multiplane optical microscope

    Li, Tongcang; Ota, Sadao; Kim, Jeongmin; Wang, Yuan; Zhang, Xiang

    2017-11-21

    This disclosure provides systems, methods, and apparatus related to optical microscopy. In one aspect, an apparatus includes a sample holder, a first objective lens, a plurality of optical components, a second objective lens, and a mirror. The apparatus may directly image a cross-section of a sample oblique to or parallel to the optical axis of the first objective lens, without scanning.

  1. Fun with Optical Fibres

    Alti, Kamlesh

    2017-01-01

    Optical fibres play a very crucial role in today's technologies. Academic courses in optical fibres start at the undergraduate level. Nevertheless, student's curiosity towards optical fibres starts from the school level. In this paper, some fun experiments have been designed for both school and college students, which have some concrete…

  2. Fiber optics in adverse environments

    Lyous, P.B.

    1982-01-01

    Radiation effects in optical fibers are considered, taking into account recent progress in the investigation of radiation resistant optical fibers, radiation damage in optical fibers, radiation-induced transient absorption in optical fibers, X-ray-induced transient attenuation at low temperatures in polymer clad silica (PCS) fibers, optical fiber composition and radiation hardness, the response of irradiated optical waveguides at low temperatures, and the effect of ionizing radiation on fiber-optic waveguides. Other topics explored are related to environmental effects on components of fiber optic systems, and radiation detection systems using optical fibers. Fiber optic systems in adverse environments are also discussed, giving attention to the survivability of Army fiber optics systems, space application of fiber optics systems, fiber optic wavelength multiplexing for civil aviation applications, a new fiber optic data bus topology, fiber optics for aircraft engine/inlet control, and application of fiber optics in high voltage substations

  3. Fractal vector optical fields.

    Pan, Yue; Gao, Xu-Zhen; Cai, Meng-Qiang; Zhang, Guan-Lin; Li, Yongnan; Tu, Chenghou; Wang, Hui-Tian

    2016-07-15

    We introduce the concept of a fractal, which provides an alternative approach for flexibly engineering the optical fields and their focal fields. We propose, design, and create a new family of optical fields-fractal vector optical fields, which build a bridge between the fractal and vector optical fields. The fractal vector optical fields have polarization states exhibiting fractal geometry, and may also involve the phase and/or amplitude simultaneously. The results reveal that the focal fields exhibit self-similarity, and the hierarchy of the fractal has the "weeding" role. The fractal can be used to engineer the focal field.

  4. [Adaptive optics for ophthalmology].

    Saleh, M

    2016-04-01

    Adaptive optics is a technology enhancing the visual performance of an optical system by correcting its optical aberrations. Adaptive optics have already enabled several breakthroughs in the field of visual sciences, such as improvement of visual acuity in normal and diseased eyes beyond physiologic limits, and the correction of presbyopia. Adaptive optics technology also provides high-resolution, in vivo imaging of the retina that may eventually help to detect the onset of retinal conditions at an early stage and provide better assessment of treatment efficacy. Copyright © 2016 Elsevier Masson SAS. All rights reserved.

  5. Small scale optics

    Yupapin, Preecha

    2013-01-01

    The behavior of light in small scale optics or nano/micro optical devices has shown promising results, which can be used for basic and applied research, especially in nanoelectronics. Small Scale Optics presents the use of optical nonlinear behaviors for spins, antennae, and whispering gallery modes within micro/nano devices and circuits, which can be used in many applications. This book proposes a new design for a small scale optical device-a microring resonator device. Most chapters are based on the proposed device, which uses a configuration know as a PANDA ring resonator. Analytical and nu

  6. Neutron optical potentials

    Wilmore, D.; Hodgson, P.E.

    1976-01-01

    The purpose of this paper is to provide a guide to the use of optical model computer programs to analyse and calculate neutron data. After a brief discussion of the physical basis of the optical model a survey is given of the most widely used optical model and Hauser-Feshbach computer programs. The range of applicability and reliability of the major optical potentials proposed is assessed by comparison with available experimental data and some observations and suggestions are made for the optimum choice of optical potentials for given purposes of neutron data calculations. (author)

  7. Progress in optics

    Wolf, Emil

    1977-01-01

    In the thirty-seven years that have gone by since the first volume of Progress in Optics was published, optics has become one of the most dynamic fields of science. At the time of inception of this series, the first lasers were only just becoming operational, holography was in its infancy, subjects such as fiber optics, integrated optics and optoelectronics did not exist and quantum optics was the domain of only a few physicists. The term photonics had not yet been coined. Today these fields are flourishing and have become areas of specialisation for many science and engineering students and n

  8. Optic disc oedema

    Nielsen, Marianne Kromann; Hamann, Steffen

    2014-01-01

    Optic disc oedema describes the nonspecific, localized swelling of the optic nerve head regardless of aetiology. Therefore, differentiating among the various aetiologies depends on a thorough history and knowledge of the clinical characteristics of the underlying conditions. Papilloedema strictly...... refers to optic disc oedema as a consequence of elevated intracranial pressure. It is usually a bilateral condition and visual function is preserved until late. Optic disc oedema caused by an anterior optic neuropathy is usually unilateral and accompanied by the loss of visual function....

  9. Progress in optics

    Wolf, Emil

    2006-01-01

    In the thirty-seven years that have gone by since the first volume of Progress in Optics was published, optics has become one of the most dynamic fields of science. At the time of inception of this series, the first lasers were only just becoming operational, holography was in its infancy, subjects such as fiber optics, integrated optics and optoelectronics did not exist and quantum optics was the domain of only a few physicists. The term photonics had not yet been coined. Today these fields are flourishing and have become areas of specialisation for many science and engineering students and n

  10. Optical Binding of Nanowires

    Simpson, Stephen Hugh; Zemánek, Pavel; Marago, O.M.; Jones, P.H.; Hanna, S.

    2017-01-01

    Roč. 17, č. 6 (2017), s. 3485-3492 ISSN 1530-6984 R&D Projects: GA ČR GB14-36681G Grant - others:AV ČR(CZ) CNR-16-12 Program:Bilaterální spolupráce Institutional support: RVO:68081731 Keywords : optical binding nanowires * Brownian motion * self-organization * non-equilibrium thermodynamics * non-equilibrium steady state * spin-orbit coupling * emergent phenomena Subject RIV: BH - Optics, Masers, Lasers OBOR OECD: Optics (including laser optics and quantum optics) Impact factor: 12.712, year: 2016

  11. Peptide Integrated Optics.

    Handelman, Amir; Lapshina, Nadezda; Apter, Boris; Rosenman, Gil

    2018-02-01

    Bio-nanophotonics is a wide field in which advanced optical materials, biomedicine, fundamental optics, and nanotechnology are combined and result in the development of biomedical optical chips. Silk fibers or synthetic bioabsorbable polymers are the main light-guiding components. In this work, an advanced concept of integrated bio-optics is proposed, which is based on bioinspired peptide optical materials exhibiting wide optical transparency, nonlinear and electrooptical properties, and effective passive and active waveguiding. Developed new technology combining bottom-up controlled deposition of peptide planar wafers of a large area and top-down focus ion beam lithography provides direct fabrication of peptide optical integrated circuits. Finding a deep modification of peptide optical properties by reconformation of biological secondary structure from native phase to β-sheet architecture is followed by the appearance of visible fluorescence and unexpected transition from a native passive optical waveguiding to an active one. Original biocompatibility, switchable regimes of waveguiding, and multifunctional nonlinear optical properties make these new peptide planar optical materials attractive for application in emerging technology of lab-on-biochips, combining biomedical photonic and electronic circuits toward medical diagnosis, light-activated therapy, and health monitoring. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  12. Automated optical assembly

    Bala, John L.

    1995-08-01

    Automation and polymer science represent fundamental new technologies which can be directed toward realizing the goal of establishing a domestic, world-class, commercial optics business. Use of innovative optical designs using precision polymer optics will enable the US to play a vital role in the next generation of commercial optical products. The increased cost savings inherent in the utilization of optical-grade polymers outweighs almost every advantage of using glass for high volume situations. Optical designers must gain experience with combined refractive/diffractive designs and broaden their knowledge base regarding polymer technology beyond a cursory intellectual exercise. Implementation of a fully automated assembly system, combined with utilization of polymer optics, constitutes the type of integrated manufacturing process which will enable the US to successfully compete with the low-cost labor employed in the Far East, as well as to produce an equivalent product.

  13. Optic nerve oxygenation

    Stefánsson, Einar; Pedersen, Daniella Bach; Jensen, Peter Koch

    2005-01-01

    The oxygen tension of the optic nerve is regulated by the intraocular pressure and systemic blood pressure, the resistance in the blood vessels and oxygen consumption of the tissue. The oxygen tension is autoregulated and moderate changes in intraocular pressure or blood pressure do not affect...... the optic nerve oxygen tension. If the intraocular pressure is increased above 40 mmHg or the ocular perfusion pressure decreased below 50 mmHg the autoregulation is overwhelmed and the optic nerve becomes hypoxic. A disturbance in oxidative metabolism in the cytochromes of the optic nerve can be seen...... at similar levels of perfusion pressure. The levels of perfusion pressure that lead to optic nerve hypoxia in the laboratory correspond remarkably well to the levels that increase the risk of glaucomatous optic nerve atrophy in human glaucoma patients. The risk for progressive optic nerve atrophy in human...

  14. MEMS optical sensor

    2013-01-01

    The present invention relates to an all-optical sensor utilizing effective index modulation of a waveguide and detection of a wavelength shift of reflected light and a force sensing system accommodating said optical sensor. One embodiment of the invention relates to a sensor system comprising...... at least one multimode light source, one or more optical sensors comprising a multimode sensor optical waveguide accommodating a distributed Bragg reflector, at least one transmitting optical waveguide for guiding light from said at least one light source to said one or more multimode sensor optical...... waveguides, a detector for measuring light reflected from said Bragg reflector in said one or more multimode sensor optical waveguides, and a data processor adapted for analyzing variations in the Bragg wavelength of at least one higher order mode of the reflected light....

  15. Circuit switched optical networks

    Kloch, Allan

    2003-01-01

    Some of the most important components required for enabling optical networking are investigated through both experiments and modelling. These all-optical components are the wavelength converter, the regenerator and the space switch. When these devices become "off-the-shelf" products, optical cross......, it is expected that the optical solution will offer an economical benefit for hight bit rate networks. This thesis begins with a discussion of the expected impact on communications systems from the rapidly growing IP traffic, which is expected to become the dominant source for traffic. IP traffic has some...... characteristics, which are best supported by an optical network. The interest for such an optical network is exemplified by the formation of the ACTS OPEN project which aim was to investigate the feasibility of an optical network covering Europe. Part of the work presented in this thesis is carried out within...

  16. Nonlinear optical systems

    Lugiato, Luigi; Brambilla, Massimo

    2015-01-01

    Guiding graduate students and researchers through the complex world of laser physics and nonlinear optics, this book provides an in-depth exploration of the dynamics of lasers and other relevant optical systems, under the umbrella of a unitary spatio-temporal vision. Adopting a balanced approach, the book covers traditional as well as special topics in laser physics, quantum electronics and nonlinear optics, treating them from the viewpoint of nonlinear dynamical systems. These include laser emission, frequency generation, solitons, optically bistable systems, pulsations and chaos and optical pattern formation. It also provides a coherent and up-to-date treatment of the hierarchy of nonlinear optical models and of the rich variety of phenomena they describe, helping readers to understand the limits of validity of each model and the connections among the phenomena. It is ideal for graduate students and researchers in nonlinear optics, quantum electronics, laser physics and photonics.

  17. Optical system design

    Fischer, Robert F

    2008-01-01

    Honed for more than 20 years in an SPIE professional course taught by renowned optical systems designer Robert E. Fischer, Optical System Design, Second Edition brings you the latest cutting-edge design techniques and more than 400 detailed diagrams that clearly illustrate every major procedure in optical design. This thoroughly updated resource helps you work better and faster with computer-aided optical design techniques, diffractive optics, and the latest applications, including digital imaging, telecommunications, and machine vision. No need for complex, unnecessary mathematical derivations-instead, you get hundreds of examples that break the techniques down into understandable steps. For twenty-first century optical design without the mystery, the authoritative Optical Systems Design, Second Edition features: Computer-aided design use explained through sample problems Case studies of third-millennium applications in digital imaging, sensors, lasers, machine vision, and more New chapters on optomechanic...

  18. Accuracies Of Optical Processors For Adaptive Optics

    Downie, John D.; Goodman, Joseph W.

    1992-01-01

    Paper presents analysis of accuracies and requirements concerning accuracies of optical linear-algebra processors (OLAP's) in adaptive-optics imaging systems. Much faster than digital electronic processor and eliminate some residual distortion. Question whether errors introduced by analog processing of OLAP overcome advantage of greater speed. Paper addresses issue by presenting estimate of accuracy required in general OLAP that yields smaller average residual aberration of wave front than digital electronic processor computing at given speed.

  19. Advances in integrated optics

    Chester, A; Bertolotti, M

    1994-01-01

    This volwne contains the Proceedings of a two-week summer conference titled "Advances in Integrated Optics" held June 1-9, 1993, in Erice, Sicily. This was the 18th annual course organized by the International School of Quantum Electronics, under the auspices of the "Ettore Majorana" Centre for Scientific Culture. The term Integrated Optics signifies guided-wave optical circuits consisting of two or more devices on a single substrate. Since its inception in the late 1960's, Integrated Optics has evolved from a specialized research topic into a broad field of work, ranging from basic research through commercial applications. Today many devices are available on market while a big effort is devolved to research on integrated nonlinear optical devices. This conference was organized to provide a comprehensive survey of the frontiers of this technology, including fundamental concepts, nonlinear optical materials, devices both in the linear and nonlinear regimes, and selected applications. These Proceedings update a...

  20. Silicon Optical Modulator Simulation

    Soon Thor LIM

    2015-04-01

    Full Text Available We developed a way of predicting and analyzing high speed optical modulator. Our research adopted a bottom-up approach to consider high-speed optical links using an eye diagram. Our method leverages on modular mapping of electrical characteristics to optical characteristics, while attaining the required accuracy necessary for device footprint approaching sub-micron scales where electrical data distribution varies drastically. We calculate for the bias dependent phase shift (2pi/mm and loss (dB/mm for the optical modulator based on the real and imaginary part of complex effective indices. Subsequently, combine effectively both the electrical and optical profiles to construct the optical eye diagram which is the essential gist of signal integrity of such devices.

  1. Tunable micro-optics

    Duppé, Claudia

    2015-01-01

    Presenting state-of-the-art research into the dynamic field of tunable micro-optics, this is the first book to provide a comprehensive survey covering a varied range of topics including novel materials, actuation concepts and new imaging systems in optics. Internationally renowned researchers present a diverse range of chapters on cutting-edge materials, devices and subsystems, including soft matter, artificial muscles, tunable lenses and apertures, photonic crystals, and complete tunable imagers. Special contributions also provide in-depth treatment of micro-optical characterisation, scanners, and the use of natural eye models as inspiration for new concepts in advanced optics. With applications extending from medical diagnosis to fibre telecommunications, Tunable Micro-optics equips readers with a solid understanding of the broader technical context through its interdisciplinary approach to the realisation of new types of optical systems. This is an essential resource for engineers in industry and academia,...

  2. Compound semiconductor optical waveguide switch

    Spahn, Olga B.; Sullivan, Charles T.; Garcia, Ernest J.

    2003-06-10

    An optical waveguide switch is disclosed which is formed from III-V compound semiconductors and which has a moveable optical waveguide with a cantilevered portion that can be bent laterally by an integral electrostatic actuator to route an optical signal (i.e. light) between the moveable optical waveguide and one of a plurality of fixed optical waveguides. A plurality of optical waveguide switches can be formed on a common substrate and interconnected to form an optical switching network.

  3. Concepts of classical optics

    Strong, John

    1958-01-01

    An intermediate course in optics, this volume explores both experimental and theoretical concepts, offering practical knowledge of geometrical optics that will enhance students' comprehension of any relevant applied science. Its exposition of the concepts of classical optics is presented with a minimum of mathematical detail but presumes some knowledge of calculus, vectors, and complex numbers.Subjects include light as wave motion; superposition of wave motions; electromagnetic waves; interaction of light and matter; velocities and scattering of light; polarized light and dielectric boundarie

  4. Fiber optics in SHIVA

    Severyn, J.; Parker, J.

    1978-01-01

    SHIVA is a twenty arm laser which is controlled with a network of fifty computers, interconnected with digital fiber optic links. Three different fiber optic systems employed on the Shiva laser will be described. Two of the systems are for digital communications, one at 9600 baud and the other at 1 megabaud. The third system uses fiber optics to distribute diagnostic triggers with subnanosecond jitter

  5. Modern optical science

    2001-05-01

    This book deals with modern optical science, which gives description of properties of light and transmission, ray tracing like Gaussian image, ray tracing and optical system, properties about light wave, a vector properties of light, interference and an interferometer, transform and application of interferometer, diffraction, application on diffraction, solid optical science, measurement of light and laser such as basic principle of laser, kinds of laser, pulse laser, resonator and single mode and multimode.

  6. Gradient-Index Optics

    2010-03-31

    nonimaging design capabilities to incorporate 1. REPORT DATE (DD-MM-YYYY) 4. TITLE AND SUBTITLE 12-04-2011 13. SUPPLEMENTARY NOTES The views, opinions...Box 12211 Research Triangle Park, NC 27709-2211 15. SUBJECT TERMS Imaging Optics, Nonimaging Optics, Gradient Index Optics, Camera, Concentrator...imaging and nonimaging design capabilities to incorporate manufacturable GRIN lenses can provide imaging lens systems that are compact and

  7. Advances in optical imaging

    Bremer, C.; Ntziachristos, V.; Mahmood, U.; Tung, C.H.; Weissleder, R.

    2001-01-01

    Different optical imaging technologies have significantly progressed over the last years. Besides advances in imaging techniques and image reconstruction, new 'smart' optical contrast agents have been developed which can be used to detect molecular targets (such as endogenous enzymes) in vivo. The combination of novel imaging technologies coupled with smart agents bears great diagnostic potential both clinically and experimentally. This overview outlines the basic principles of optical imaging and summarizes the current state of the art. (orig.) [de

  8. Progress in optics

    Wolf, Emil

    2008-01-01

    In the fourty-six years that have gone by since the first volume of Progress in Optics was published, optics has become one of the most dynamic fields of science. The volumes in this series which have appeared up to now contain more than 300 review articles by distinguished research workers, which have become permanent records for many important developments.- Metamaterials- Polarization Techniques- Linear Baisotropic Mediums- Ultrafast Optical Pulses- Quantum Imaging- Point-Spread Funcions- Discrete Wigner Functions

  9. Application Specific Optical Fibers

    Pal, Bishnu P.

    2010-01-01

    In this chapter we have attempted to provide a unified summary description of the most important propagation characteristics of an optical fiber followed by discussion on several variety of special fibers for realizing fiber amplifiers, dispersion compensating fibers, microstructured optical fibers, and so on. Even though huge progress has been made on development of optical fibers for telecom application, a need for developing special fibers, not necessarily for telecom alone, has arisen. Th...

  10. Optical Fibre Bundle

    These are sample fibre optic cables which are used for networking. Optical fibers are widely used in fiber-optic communications, where they permit transmission over longer distances and at higher bandwidths (data rates) than wire cables. Fibers are used instead of metal wires because signals travel along them with less loss and are also immune to electromagnetic interference. This is useful for somewhere like CERN where magnets with their highly powerful magnetic fields could pose a problem.

  11. Optical programmable metamaterials

    Gong, Cheng; Zhang, Nan; Dai, Zijie; Liu, Weiwei

    2018-02-01

    We suggest and demonstrate the concept of optical programmable metamaterials which can configure the device's electromagnetic parameters by the programmable optical stimuli. In such metamaterials, the optical stimuli produced by a FPGA controlled light emitting diode array can switch or combine the resonance modes which are coupled in. As an example, an optical programmable metamaterial terahertz absorber is proposed. Each cell of the absorber integrates four meta-rings (asymmetric 1/4 rings) with photo-resistors connecting the critical gaps. The principle and design of the metamaterials are illustrated and the simulation results demonstrate the functionalities for programming the metamaterial absorber to change its bandwidth and resonance frequency.

  12. Optical Pattern Recognition

    Yu, Francis T. S.; Jutamulia, Suganda

    2008-10-01

    Contributors; Preface; 1. Pattern recognition with optics Francis T. S. Yu and Don A. Gregory; 2. Hybrid neural networks for nonlinear pattern recognition Taiwei Lu; 3. Wavelets, optics, and pattern recognition Yao Li and Yunglong Sheng; 4. Applications of the fractional Fourier transform to optical pattern recognition David Mendlovic, Zeev Zalesky and Haldum M. Oxaktas; 5. Optical implementation of mathematical morphology Tien-Hsin Chao; 6. Nonlinear optical correlators with improved discrimination capability for object location and recognition Leonid P. Yaroslavsky; 7. Distortion-invariant quadratic filters Gregory Gheen; 8. Composite filter synthesis as applied to pattern recognition Shizhou Yin and Guowen Lu; 9. Iterative procedures in electro-optical pattern recognition Joseph Shamir; 10. Optoelectronic hybrid system for three-dimensional object pattern recognition Guoguang Mu, Mingzhe Lu and Ying Sun; 11. Applications of photrefractive devices in optical pattern recognition Ziangyang Yang; 12. Optical pattern recognition with microlasers Eung-Gi Paek; 13. Optical properties and applications of bacteriorhodopsin Q. Wang Song and Yu-He Zhang; 14. Liquid-crystal spatial light modulators Aris Tanone and Suganda Jutamulia; 15. Representations of fully complex functions on real-time spatial light modulators Robert W. Cohn and Laurence G. Hassbrook; Index.

  13. Optics, light and lasers

    Meschede, Dieter

    2008-01-01

    Starting from the concepts of classical optics, Optics, Light and Lasers introduces in detail the phenomena of linear and nonlinear light matter interaction, the properties of modern laser sources, and the concepts of quantum optics. Several examples taken from the scope of modern research are provided to emphasize the relevance of optics in current developments within science and technology. The text has been written for newcomers to the topic and benefits from the author's ability to explain difficult sequences and effects in a straightforward and easily comprehensible way. To this second, c

  14. Optical analog transmission device

    Ikawa, Shinji.

    1994-01-01

    The present invention concerns a device such as electro-optical conversion elements, optoelectric-electric elements and optical transmission channel, not undergoing deleterious effects on the efficiency of conversion and transmission due to temperature, and aging change. That is, a sine wave superposing means superposes, on a detector signal to be transmitted, a sine-wave signal having a predetermined amplitude and at a frequency lower than that of the detector signal. An optoelectric conversion means converts the electric signal as the signal of the sine-wave signal superposing means into an optical signal and outputs the same to an optical transmitting channel. The optoelectric conversion means converts the transmitted signal to an electric signal. A discriminating means discriminates the electric signal into a detector signal and a sine-wave signal. A calculating means calculates an optical transmitting efficiency of the transmitting channel based on the amplitude of the discriminated sine-wave signal. A processing means compensates an amplitude value of the detector signals discriminated by the discriminating means based on the optical transmission efficiency. As a result, an optical analog transmission device can be attained, which conducts optical transmission at a high accuracy without undergoing the defective effects of the optical transmission efficiency. (I.S.)

  15. Elementary wave optics

    Webb, Robert H

    2005-01-01

    This undergraduate textbook presents thorough coverage of the standard topics of classical optics and optical instrument design; it also offers significant details regarding the concepts of modern optics. Its survey of the mathematical tools of optics grants students insights into the physical principles of quantum mechanics.Two principal concepts occur throughout: a treatment of scattering from real scatterers (leading to Huygens' principles, diffraction theory, the index of refraction, and related topics); and the difference between coherent and noncoherent wave phenomena. Examinations of su

  16. Optically pumped atoms

    Happer, William; Walker, Thad

    2010-01-01

    Covering the most important knowledge on optical pumping of atoms, this ready reference is backed by numerous examples of modelling computation for optical pumped systems. The authors show for the first time that modern scientific computing software makes it practical to analyze the full, multilevel system of optically pumped atoms. To make the discussion less abstract, the authors have illustrated key points with sections of MATLAB codes. To make most effective use of contemporary mathematical software, it is especially useful to analyze optical pumping situations in the Liouville spa

  17. Bidirectional optical scattering facility

    Federal Laboratory Consortium — Goniometric optical scatter instrument (GOSI)The bidirectional reflectance distribution function (BRDF) quantifies the angular distribution of light scattered from a...

  18. Highly Sensitive Optical Receivers

    Schneider, Kerstin

    2006-01-01

    Highly Sensitive Optical Receivers primarily treats the circuit design of optical receivers with external photodiodes. Continuous-mode and burst-mode receivers are compared. The monograph first summarizes the basics of III/V photodetectors, transistor and noise models, bit-error rate, sensitivity and analog circuit design, thus enabling readers to understand the circuits described in the main part of the book. In order to cover the topic comprehensively, detailed descriptions of receivers for optical data communication in general and, in particular, optical burst-mode receivers in deep-sub-µm CMOS are presented. Numerous detailed and elaborate illustrations facilitate better understanding.

  19. Interactive virtual optical laboratories

    Liu, Xuan; Yang, Yi

    2017-08-01

    Laboratory experiences are essential for optics education. However, college students have limited access to advanced optical equipment that is generally expensive and complicated. Hence there is a need for innovative solutions to expose students to advanced optics laboratories. Here we describe a novel approach, interactive virtual optical laboratory (IVOL) that allows unlimited number of students to participate the lab session remotely through internet, to improve laboratory education in photonics. Although students are not physically conducting the experiment, IVOL is designed to engage students, by actively involving students in the decision making process throughout the experiment.

  20. Optical network democratization.

    Nejabati, Reza; Peng, Shuping; Simeonidou, Dimitra

    2016-03-06

    The current Internet infrastructure is not able to support independent evolution and innovation at physical and network layer functionalities, protocols and services, while at same time supporting the increasing bandwidth demands of evolving and heterogeneous applications. This paper addresses this problem by proposing a completely democratized optical network infrastructure. It introduces the novel concepts of the optical white box and bare metal optical switch as key technology enablers for democratizing optical networks. These are programmable optical switches whose hardware is loosely connected internally and is completely separated from their control software. To alleviate their complexity, a multi-dimensional abstraction mechanism using software-defined network technology is proposed. It creates a universal model of the proposed switches without exposing their technological details. It also enables a conventional network programmer to develop network applications for control of the optical network without specific technical knowledge of the physical layer. Furthermore, a novel optical network virtualization mechanism is proposed, enabling the composition and operation of multiple coexisting and application-specific virtual optical networks sharing the same physical infrastructure. Finally, the optical white box and the abstraction mechanism are experimentally evaluated, while the virtualization mechanism is evaluated with simulation. © 2016 The Author(s).

  1. Optical engineering of diamond

    Rabeau, James R

    2013-01-01

    This is the first comprehensive book on the engineering of diamond optical devices. It will give readers an up-to-date account of the properties of optical quality synthetic diamond (single crystal, nanodiamond and polycrystalline) and reviews the large and growing field of engineering of diamond-based optical devices, with applications in quantum computation, nano-imaging, high performance lasers, and biomedicine. It aims to provide scientists, engineers and physicists with a valuable resource and reference book for the design and performance of diamond-based optical devices.

  2. Optics for engineers

    DiMarzio, Charles A

    2011-01-01

    This book is an excellent resource for teaching any student or scientist who needs to use optical systems. I particularly like the addition of MATLAB scripts and functions. Highly recommended.-Professor James C. Wyant, Dean of College of Optical Sciences, University of ArizonaHis book is clear, concise and highly readable. This is an excellent text.-Professor Changhuei Yang, California Institute of TechnologyAt last, a book on optics that is written with the practising engineer in mind. I have been teaching optics to engineers for many years and have often longed for a text aimed at my student

  3. Advanced optical instruments technology

    Shao, Mike; Chrisp, Michael; Cheng, Li-Jen; Eng, Sverre; Glavich, Thomas; Goad, Larry; Jones, Bill; Kaarat, Philip; Nein, Max; Robinson, William

    1992-08-01

    The science objectives for proposed NASA missions for the next decades push the state of the art in sensitivity and spatial resolution over a wide range of wavelengths, including the x-ray to the submillimeter. While some of the proposed missions are larger and more sensitive versions of familiar concepts, such as the next generation space telescope, others use concepts, common on the Earth, but new to space, such as optical interferometry, in order to provide spatial resolutions impossible with other concepts. However, despite their architecture, the performance of all of the proposed missions depends critically on the back-end instruments that process the collected energy to produce scientifically interesting outputs. The Advanced Optical Instruments Technology panel was chartered with defining technology development plans that would best improve optical instrument performance for future astrophysics missions. At this workshop the optical instrument was defined as the set of optical components that reimage the light from the telescope onto the detectors to provide information about the spatial, spectral, and polarization properties of the light. This definition was used to distinguish the optical instrument technology issues from those associated with the telescope, which were covered by a separate panel. The panel identified several areas for optical component technology development: diffraction gratings; tunable filters; interferometric beam combiners; optical materials; and fiber optics. The panel also determined that stray light suppression instruments, such as coronagraphs and nulling interferometers, were in need of general development to support future astrophysics needs.

  4. Ocean Optics Instrumentation Systems

    Federal Laboratory Consortium — FUNCTION: Provides instrumentation suites for a wide variety of measurements to characterize the ocean’s optical environment. These packages have been developed to...

  5. All-optical signal processing for optical packet switching networks

    Liu, Y.; Hill, M.T.; Calabretta, N.; Tangdiongga, E.; Geldenhuys, R.; Zhang, S.; Li, Z.; Waardt, de H.; Khoe, G.D.; Dorren, H.J.S.; Iftekharuddin, K.M.; awwal, A.A.S.

    2005-01-01

    We discuss how all-optical signal processing might play a role in future all-optical packet switched networks. We introduce a concept of optical packet switches that employ entirely all-optical signal processing technology. The optical packet switch is made out of three functional blocks: the

  6. Intelligent Optical Systems Using Adaptive Optics

    Clark, Natalie

    2012-01-01

    Until recently, the phrase adaptive optics generally conjured images of large deformable mirrors being integrated into telescopes to compensate for atmospheric turbulence. However, the development of smaller, cheaper devices has sparked interest for other aerospace and commercial applications. Variable focal length lenses, liquid crystal spatial light modulators, tunable filters, phase compensators, polarization compensation, and deformable mirrors are becoming increasingly useful for other imaging applications including guidance navigation and control (GNC), coronagraphs, foveated imaging, situational awareness, autonomous rendezvous and docking, non-mechanical zoom, phase diversity, and enhanced multi-spectral imaging. The active components presented here allow flexibility in the optical design, increasing performance. In addition, the intelligent optical systems presented offer advantages in size and weight and radiation tolerance.

  7. Random photonic crystal optical memory

    Wirth Lima Jr, A; Sombra, A S B

    2012-01-01

    Currently, optical cross-connects working on wavelength division multiplexing systems are based on optical fiber delay lines buffering. We designed and analyzed a novel photonic crystal optical memory, which replaces the fiber delay lines of the current optical cross-connect buffer. Optical buffering systems based on random photonic crystal optical memory have similar behavior to the electronic buffering systems based on electronic RAM memory. In this paper, we show that OXCs working with optical buffering based on random photonic crystal optical memories provides better performance than the current optical cross-connects. (paper)

  8. Multimode optical fiber

    Bigot-Astruc, Marianne; Molin, Denis; Sillard, Pierre

    2014-11-04

    A depressed graded-index multimode optical fiber includes a central core, an inner depressed cladding, a depressed trench, an outer depressed cladding, and an outer cladding. The central core has an alpha-index profile. The depressed claddings limit the impact of leaky modes on optical-fiber performance characteristics (e.g., bandwidth, core size, and/or numerical aperture).

  9. The Athena Optics

    Bavdaz, Marcos; Wille, Eric; Shortt, Brian

    2015-01-01

    studies and in parallel a comprehensive series of technology preparation activities. [1-3].The core enabling technology for the high performance mirror is the Silicon Pore Optics (SPO), a modular X-ray optics technology, which utilises processes and equipment developed for the semiconductor industry [4...

  10. Optical phase conjugation

    Fisher, Robert A

    1983-01-01

    This book appears at a time of intense activity in optical phase conjugation. We chose not to await the maturation of the field, but instead to provide this material in time to be useful in its development. We have tried very hard to elucidate and interrelate the various nonlinear phenomena which can be used for optical phase conjugation.

  11. Touch screens go optical

    Hanson, Steen Grüner; Jakobsen, Michael Linde; Pedersen, Henrik Chresten

    2012-01-01

    A simple optical implementation of a touch screen is made possible by disrupting the total internal reflection in a 2D waveguide.......A simple optical implementation of a touch screen is made possible by disrupting the total internal reflection in a 2D waveguide....

  12. Isolated optic nerve pseudotumour

    Patankar, T.; Prasad, S.; Krishnan, A.; Laxminarayan, R.

    2000-01-01

    Isolated optic nerve involvement by the idiopathic inflammatory process is a rare finding and very few reports are available. Here a case of an isolated optic nerve inflammatory pseudotumour presenting with gradually progressive unilateral loss of vision is described. It showed dramatic response to a trial of steroids and its differential diagnoses are discussed. Copyright (1999) Blackwell Science Pty Ltd

  13. High Collection Nonimaging Optics

    Winston, Roland

    1989-07-01

    Nonimaging optics departs from the methods of traditional optical design to develop instead techniques for maximizing the collecting power of concentrating elements and systems. Designs which exceed the concentration attainable with focusing techniques by factors of four or more and approach the theoretical limit are possible (ideal concentrators). The methodology for designing high collection nonirnaging systems is described.

  14. Genetically determined optic neuropathies

    Milea, Dan; Amati-Bonneau, Patrizia; Reynier, Pascal

    2010-01-01

    The present review focuses on recent advances in the knowledge of hereditary optic neuropathies resulting from retinal ganglion cell degeneration, mostly due to mitochondrial dysfunctions.......The present review focuses on recent advances in the knowledge of hereditary optic neuropathies resulting from retinal ganglion cell degeneration, mostly due to mitochondrial dysfunctions....

  15. Dynamic Optically Multiplexed Imaging

    2015-07-29

    Dynamic Optically Multiplexed Imaging Yaron Rachlin, Vinay Shah, R. Hamilton Shepard, and Tina Shih Lincoln Laboratory, Massachusetts Institute of...V. Shah, and T. Shih “Design Architectures for Optically Multiplexed Imaging,” in submission 9 R. Gupta , P. Indyk, E. Price, and Y. Rachlin

  16. POLARISATION PRESERVING OPTICAL FIBRE

    2000-01-01

    . This cladding structure provides polarisation preserving properties to the optical fibre. Optical fibres using this technology may have claddings with elements placed non-periodically as well as in a two-dimensional periodic lattice - such as cladding providing Photonic Band Gap (PBG) effects....

  17. Optics of charged particles

    Wollnik, H.

    1987-01-01

    Suitable for both the specialist and non-specialist, this book develops all statements from first principles. Key chapters of the book focus upon how to design particle-optical systems, the systematics of image abberations, the effects of fringing fields, systematics of beams, and solutions for particle-optical systems. An undergraduate background in physics and mathematics is required for this work

  18. Hybrid Optical Inference Machines

    1991-09-27

    with labels. Now, events. a set of facts cal be generated in the dyadic form "u, R 1,2" Eichmann and Caulfield (19] consider the same type of and can...these enceding-schemes. These architectures are-based pri- 19. G. Eichmann and H. J. Caulfield, "Optical Learning (Inference)marily on optical inner

  19. Optically Anomalous Crystals

    Shtukenberg, Alexander; Kahr, Bart

    2007-01-01

    Optical anomalies in crystals are puzzles that collectively constituted the greatest unsolved problems in crystallography in the 19th Century. The most common anomaly is a discrepancy between a crystal’s symmetry as determined by its shape or by X-ray analysis, and that determined by monitoring the polarization state of traversing light. These discrepancies were perceived as a great impediment to the development of the sciences of crystals on the basis of Curie’s Symmetry Principle, the grand organizing idea in the physical sciences to emerge in the latter half of the 19th Century. Optically Anomalous Crystals begins with an historical introduction covering the contributions of Brewster, Biot, Mallard, Brauns, Tamman, and many other distinguished crystallographers. From this follows a tutorial in crystal optics. Further chapters discuss the two main mechanisms of optical dissymmetry: 1. the piezo-optic effect, and 2. the kinetic ordering of atoms. The text then tackles complex, inhomogeneous crystals, and...

  20. Fiber optics standard dictionary

    Weik, Martin H

    1997-01-01

    Fiber Optics Vocabulary Development In 1979, the National Communications System published Technical InfonnationBulle­ tin TB 79-1, Vocabulary for Fiber Optics and Lightwave Communications, written by this author. Based on a draft prepared by this author, the National Communications System published Federal Standard FED-STD-1037, Glossary of Telecommunications Terms, in 1980 with no fiber optics tenns. In 1981, the first edition of this dictionary was published under the title Fiber Optics and Lightwave Communications Standard Dictionary. In 1982, the then National Bureau of Standards, now the National Institute of Standards and Technology, published NBS Handbook 140, Optical Waveguide Communications Glossary, which was also published by the General Services Admin­ istration as PB82-166257 under the same title. Also in 1982, Dynamic Systems, Inc. , Fiberoptic Sensor Technology Handbook, co-authored and edited by published the this author, with an extensive Fiberoptic Sensors Glossary. In 1989, the handbook w...

  1. Polarization Optics in Telecommunications

    Damask, Jay N

    2005-01-01

    The strong investments into optical telecommunications in the late 1990s resulted in a wealth of new research, techniques, component designs, and understanding of polarization effects in fiber. Polarization Optics in Telecommunications brings together recent advances in the field to create a standard, practical reference for component designers and optical fiber communication engineers. Beginning with a sound foundation in electromagnetism, the author offers a dissertation of the spin-vector formalism of polarization and the interaction of light with media. Applications discussed include optical isolators, optical circulators, fiber collimators, and a variety of applied waveplate and prism combinations. Also included in an extended discussion of polarization-mode dispersion (PMD) and polarization-dependent loss (PDL), their representation, behavior, statistical properties, and measurement. This book draws extensively from the technical and patent literature and is an up-to-date reference for researchers and c...

  2. Optical computer switching network

    Clymer, B.; Collins, S. A., Jr.

    1985-01-01

    The design for an optical switching system for minicomputers that uses an optical spatial light modulator such as a Hughes liquid crystal light valve is presented. The switching system is designed to connect 80 minicomputers coupled to the switching system by optical fibers. The system has two major parts: the connection system that connects the data lines by which the computers communicate via a two-dimensional optical matrix array and the control system that controls which computers are connected. The basic system, the matrix-based connecting system, and some of the optical components to be used are described. Finally, the details of the control system are given and illustrated with a discussion of timing.

  3. Optical analogy. Synthesis report

    1965-01-01

    The authors report the study of conditions under which light attenuation (reflection, diffusion, absorption) and the attenuation of some radiations (notably thermal neutrons) can be described with analogical calculations. The analogy between light physical properties and neutron properties is not searched for, but the analogy between their attenuation characteristics. After having discussed this possible analogy, they propose a mathematical formulation of neutron and optical phenomena which could theoretically justify the optical analogy. The second part reports a more practical study of optics problems such as the study of simple optics materials and illumination measurements, or more precisely the study of angular distributions of optical reflections, a determination of such angular distributions, and an experimental determination of the albedo

  4. Elements of quantum optics

    Meystre, Pierre

    2007-01-01

    Elements of Quantum Optics gives a self-contained and broad coverage of the basic elements necessary to understand and carry out research in laser physics and quantum optics, including a review of basic quantum mechanics and pedagogical introductions to system-reservoir interactions and to second quantization. The text reveals the close connection between many seemingly unrelated topics, such as probe absorption, four-wave mixing, optical instabilities, resonance fluorescence and squeezing. It also comprises discussions of cavity quantum electrodynamics and atom optics. The 4th edition includes a new chapter on quantum entanglement and quantum information, as well as added discussions of the quantum beam splitter, electromagnetically induced transparency, slow light, and the input-output formalism needed to understand many problems in quantum optics. It also provides an expanded treatment of the minimum-coupling Hamiltonian and a simple derivation of the Gross-Pitaevskii equation, an important gateway to rese...

  5. Fiber optic hydrophone

    Kuzmenko, Paul J.; Davis, Donald T.

    1994-01-01

    A miniature fiber optic hydrophone based on the principles of a Fabry-Perot interferometer. The hydrophone, in one embodiment, includes a body having a shaped flexible bladder at one end which defines a volume containing air or suitable gas, and including a membrane disposed adjacent a vent. An optic fiber extends into the body with one end terminating in spaced relation to the membrane. Acoustic waves in the water that impinge on the bladder cause the pressure of the volume therein to vary causing the membrane to deflect and modulate the reflectivity of the Fabry-Perot cavity formed by the membrane surface and the cleaved end of the optical fiber disposed adjacent to the membrane. When the light is transmitted down the optical fiber, the reflected signal is amplitude modulated by the incident acoustic wave. Another embodiment utilizes a fluid filled volume within which the fiber optic extends.

  6. Optics equations for aero-optical analysis

    Sutton, George W.; Pond, John E.

    2011-05-01

    Aero-optical effects occur around moving air vehicles and impact passive imaging or active systems. The air flow around the vehicle is compressed, and often there is a turbulent shear and/or boundary layer both of which cause variations in the index of refraction. Examples of these are reconnaissance aircraft, the Stratospheric Observatory for Infrared Optics (SOFIA), and optically homing hypersonic interceptors. In other applications, a laser beam can be formed within the vehicle, and projected outward and focused on an object. These include the Airborne Laser Laboratory, Airborne Laser and the Airborne Tactical Laser. There are many compressible fluid mechanics computer programs that can predict the air density distribution of the surrounding flow field including density fluctuations in turbulent shear and/or boundary layers. It is necessary for the physical optics to be used to predict the properties of the ensuing image plane intensity distribution, whether passive or active. These include the time-averaged image blur circle and instantaneous realizations. (Ray tracing is a poor approximation that gives erroneous results for small aberrations.)

  7. Structural, optical spectroscopy, optical conductivity, dielectric ...

    13

    different methods of preparation [36-41]. The electrical insulator materials with low refractive index and low absorption are needed for various optical devices, such as low loss waveguides, resonators, photonic crystals, distributed Bragg reflectors, light-emitting diodes, passive splitters, biosensors, attenuators and filters ...

  8. Miniature Optical Isolator, Phase II

    National Aeronautics and Space Administration — To address NASA's need for compact optical isolators, Physical Optics Corporation (POC) proposes to continue the development of a new Miniature Optical Isolator...

  9. Stochastic singular optics (Conference paper)

    Roux, FS

    2014-09-01

    Full Text Available The study of optical vortices in stochastic optical fields involves various quantities, including the vortex density and topological charge density, that are defined in terms of local expectation values of distributions of optical vortices...

  10. 50 years of nonlinear optics

    Shen Yuanrang

    2011-01-01

    This article presents a brief introduction to the birth and early investigations of nonlinear optics, such as second harmonic generation,sum and difference frequency generation, stimulated Raman scattering,and self-action of light etc. Several important research achievements and applications of nonlinear optics are presented as well, including nonlinear optical spectroscopy, phase conjugation and adaptive optics, coherent nonlinear optics, and high-order harmonic generation. In the end, current and future research topics in nonlinear optics are summarized. (authors)

  11. Naval Prototype Optical Interferometer (NPOI)

    Federal Laboratory Consortium — FUNCTION: Used for astrometry and astronomical imaging, the Naval Prototype Optical Interferometer (NPOI) is a distributed aperture optical telescope. It is operated...

  12. Isolated Optic Disc Tuberculosis

    Mansour, Ahmad M.; Tabbara, Khalid F.; Tabbarah, Zuhair

    2015-01-01

    We present a healthy male subject who developed progressive visual loss in the left eye initially diagnosed as optic neuritis. Upon suspicion of infectious etiology, testing was positive for tuberculosis. There were no signs or symptoms of active systemic tuberculosis infection. The patient responded swiftly to antimycobacterial therapy with return of vision and resolution of disc swelling. Positive purified protein derivative skin test, negative chest radiograph, negative systemic workup, negative workup for other causes of unilateral optic neuritis and quick response to mycobacterial therapy reaffirm the entity of isolated optic disc tuberculosis similar to isolated choroidal tuberculosis without systemic manifestation. PMID:26483675

  13. Isolated Optic Disc Tuberculosis

    Ahmad M. Mansour

    2015-09-01

    Full Text Available We present a healthy male subject who developed progressive visual loss in the left eye initially diagnosed as optic neuritis. Upon suspicion of infectious etiology, testing was positive for tuberculosis. There were no signs or symptoms of active systemic tuberculosis infection. The patient responded swiftly to antimycobacterial therapy with return of vision and resolution of disc swelling. Positive purified protein derivative skin test, negative chest radiograph, negative systemic workup, negative workup for other causes of unilateral optic neuritis and quick response to mycobacterial therapy reaffirm the entity of isolated optic disc tuberculosis similar to isolated choroidal tuberculosis without systemic manifestation.

  14. Optical fiber spectrophotometer

    Zhuang Weixin; Tian Guocheng; Ye Guoan; Zhou Zhihong; Cheng Weiwei; Huang Lifeng; Liu Suying; Tang Yanji; Hu Jingxin; Zhao Yonggang

    1998-12-01

    A method called 'Two Arm's Photo out and Electricity Send-back' is introduced. UV-365 UV/VIS/NIR spectrophotometer has been reequipped by this way with 5 meters long optical fiber. Another method called 'One Arm's Photo out and Photo Send-back' is also introduced. λ 19 UV/VIS/NIR spectrophotometer has been reequipped by this way with 10 meters long optical fiber. Optical fiber spectrophotometer can work as its main set. So it is particularly applicable to radio activity work

  15. The ANTARES optical module

    Amram, P.; Anghinolfi, M.; Anvar, S.; Ardellier-Desages, F.E.; Aslanides, E.; Aubert, J.-J.; Azoulay, R.; Bailey, D.; Basa, S.; Battaglieri, M.; Bellotti, R.; Benhammou, Y.; Bernard, F.; Berthier, R.; Bertin, V.; Billault, M.; Blaes, R.; Bland, R.W.; Blondeau, F.; Botton, N. de; Boulesteix, J.; Brooks, C.B.; Brunner, J.; Cafagna, F.; Calzas, A.; Capone, A.; Caponetto, L.; Carloganu, C.; Carmona, E.; Carr, J.; Carton, P.-H.; Cartwright, S.L.; Cassol, F.; Cecchini, S.; Ciacio, F.; Circella, M.; Compere, C.; Cooper, S.; Coyle, P.; Croquette, J.; Cuneo, S.; Danilov, M.; Dantzig, R. van; De Marzo, C.; DeVita, R.; Deck, P.; Destelle, J.-J.; Dispau, G.; Drougou, J.F.; Druillole, F.; Engelen, J.; Feinstein, F.; Festy, D.; Fopma, J.; Gallone, J.-M.; Giacomelli, G.; Goret, P.; Gosset, L.; Gournay, J.-F.; Heijboer, A.; Hernandez-Rey, J.J.; Herrouin, G.; Hubbard, J.R.; Jaquet, M.; Jong, M. de; Karolak, M.; Kooijman, P.; Kouchner, A.; Kudryavtsev, V.A.; Lachartre, D.; Lafoux, H. E-mail: lafoux@cea.fr; Lamare, P.; Languillat, J.-C.; Laubier, L.; Laugier, J.-P.; Le Guen, Y.; Le Provost, H.; Le Van Suu, A.; Lemoine, L.; Lo Nigro, L.; Lo Presti, D.; Loucatos, S.; Louis, F.; Lyashuk, V.; Magnier, P.; Marcelin, M.; Margiotta, A.; Massol, A.; Masullo, R.; Mazeas, F.; Mazeau, B.; Mazure, A.; McMillan, J.E.; Michel, J.L.; Migneco, E.; Millot, C.; Mols, P.; Montanet, F.; Montaruli, T.; Morel, J.P.; Moscoso, L.; Musumeci, M.; Navas, S.; Nezri, E.; Nooren, G.J.; Oberski, J.; Olivetto, C.; Oppelt-Pohl, A.; Palanque-Delabrouille, N.; Papaleo, R.; Payre, P.; Perrin, P.; Petruccetti, M.; Petta, C.; Piattelli, P.; Poinsignon, J.; Potheau, R.; Queinec, Y.; Racca, C.; Raia, G.; Randazzo, N.; Rethore, F.; Riccobene, G.; Ricol, J.-S.; Ripani, M.; Roca-Blay, V.; Rolin, J.F.; Rostovstev, A.; Russo, G.V.; Sacquin, Y.; Salusti, E.; Schuller, J.-P.; Schuster, W.; Soirat, J.-P.; Souvorova, O.; Spooner, N.J.C.; Spurio, M.; Stolarczyk, T.; Stubert, D.; Taiuti, M.; Tao, C.; Tayalati, Y.; Thompson, L.F.

    2002-05-21

    The ANTARES collaboration is building a deep sea neutrino telescope in the Mediterranean Sea. This detector will cover a sensitive area of typically 0.1 km{sup 2} and will be equipped with about 1000 optical modules. Each of these optical modules consists of a large area photomultiplier and its associated electronics housed in a pressure resistant glass sphere. The design of the ANTARES optical module, which is a key element of the detector, has been finalized following extensive R and D studies and is reviewed here in detail.

  16. Optical Access Networks

    Zheng, Jun; Ansari, Nirwan

    2005-06-01

    Call for Papers: Optical Access Networks With the wide deployment of fiber-optic technology over the past two decades, we have witnessed a tremendous growth of bandwidth capacity in the backbone networks of today's telecommunications infrastructure. However, access networks, which cover the "last-mile" areas and serve numerous residential and small business users, have not been scaled up commensurately. The local subscriber lines for telephone and cable television are still using twisted pairs and coaxial cables. Most residential connections to the Internet are still through dial-up modems operating at a low speed on twisted pairs. As the demand for access bandwidth increases with emerging high-bandwidth applications, such as distance learning, high-definition television (HDTV), and video on demand (VoD), the last-mile access networks have become a bandwidth bottleneck in today's telecommunications infrastructure. To ease this bottleneck, it is imperative to provide sufficient bandwidth capacity in the access networks to open the bottleneck and thus present more opportunities for the provisioning of multiservices. Optical access solutions promise huge bandwidth to service providers and low-cost high-bandwidth services to end users and are therefore widely considered the technology of choice for next-generation access networks. To realize the vision of optical access networks, however, many key issues still need to be addressed, such as network architectures, signaling protocols, and implementation standards. The major challenges lie in the fact that an optical solution must be not only robust, scalable, and flexible, but also implemented at a low cost comparable to that of existing access solutions in order to increase the economic viability of many potential high-bandwidth applications. In recent years, optical access networks have been receiving tremendous attention from both academia and industry. A large number of research activities have been carried out or

  17. Handbook of optical design

    Malacara-Hernández, Daniel

    2013-01-01

    Handbook of Optical Design, Third Edition covers the fundamental principles of geometric optics and their application to lens design in one volume. It incorporates classic aspects of lens design along with important modern methods, tools, and instruments, including contemporary astronomical telescopes, Gaussian beams, and computer lens design. Written by respected researchers, the book has been extensively classroom-tested and developed in their lens design courses. This well-illustrated handbook clearly and concisely explains the intricacies of optical system design and evaluation. It also di

  18. Tuned optical cavity magnetometer

    Okandan, Murat; Schwindt, Peter

    2010-11-02

    An atomic magnetometer is disclosed which utilizes an optical cavity formed from a grating and a mirror, with a vapor cell containing an alkali metal vapor located inside the optical cavity. Lasers are used to magnetically polarize the alkali metal vapor and to probe the vapor and generate a diffracted laser beam which can be used to sense a magnetic field. Electrostatic actuators can be used in the magnetometer for positioning of the mirror, or for modulation thereof. Another optical cavity can also be formed from the mirror and a second grating for sensing, adjusting, or stabilizing the position of the mirror.

  19. Quantum Nonlinear Optics

    Hanamura, Eiichi; Yamanaka, Akio

    2007-01-01

    This graduate-level textbook gives an introductory overview of the fundamentals of quantum nonlinear optics. Based on the quantum theory of radiation, Quantum Nonlinear Optics incorporates the exciting developments in novel nonlinear responses of materials (plus laser oscillation and superradiance) developed over the past decade. It deals with the organization of radiation field, interaction between electronic system and radiation field, statistics of light, mutual manipulation of light and matter, laser oscillation, dynamics of light, nonlinear optical response, and nonlinear spectroscopy, as well as ultrashort and ultrastrong laser pulse. Also considered are Q-switching, mode locking and pulse compression. Experimental and theoretical aspects are intertwined throughout.

  20. The ANTARES optical module

    Amram, P.; Anghinolfi, M.; Anvar, S.; Ardellier-Desages, F.E.; Aslanides, E.; Aubert, J.-J.; Azoulay, R.; Bailey, D.; Basa, S.; Battaglieri, M.; Bellotti, R.; Benhammou, Y.; Bernard, F.; Berthier, R.; Bertin, V.; Billault, M.; Blaes, R.; Bland, R.W.; Blondeau, F.; Botton, N. de; Boulesteix, J.; Brooks, C.B.; Brunner, J.; Cafagna, F.; Calzas, A.; Capone, A.; Caponetto, L.; Carloganu, C.; Carmona, E.; Carr, J.; Carton, P.-H.; Cartwright, S.L.; Cassol, F.; Cecchini, S.; Ciacio, F.; Circella, M.; Compere, C.; Cooper, S.; Coyle, P.; Croquette, J.; Cuneo, S.; Danilov, M.; Dantzig, R. van; De Marzo, C.; DeVita, R.; Deck, P.; Destelle, J.-J.; Dispau, G.; Drougou, J.F.; Druillole, F.; Engelen, J.; Feinstein, F.; Festy, D.; Fopma, J.; Gallone, J.-M.; Giacomelli, G.; Goret, P.; Gosset, L.; Gournay, J.-F.; Heijboer, A.; Hernandez-Rey, J.J.; Herrouin, G.; Hubbard, J.R.; Jaquet, M.; Jong, M. de; Karolak, M.; Kooijman, P.; Kouchner, A.; Kudryavtsev, V.A.; Lachartre, D.; Lafoux, H.; Lamare, P.; Languillat, J.-C.; Laubier, L.; Laugier, J.-P.; Le Guen, Y.; Le Provost, H.; Le Van Suu, A.; Lemoine, L.; Lo Nigro, L.; Lo Presti, D.; Loucatos, S.; Louis, F.; Lyashuk, V.; Magnier, P.; Marcelin, M.; Margiotta, A.; Massol, A.; Masullo, R.; Mazeas, F.; Mazeau, B.; Mazure, A.; McMillan, J.E.; Michel, J.L.; Migneco, E.; Millot, C.; Mols, P.; Montanet, F.; Montaruli, T.; Morel, J.P.; Moscoso, L.; Musumeci, M.; Navas, S.; Nezri, E.; Nooren, G.J.; Oberski, J.; Olivetto, C.; Oppelt-Pohl, A.; Palanque-Delabrouille, N.; Papaleo, R.; Payre, P.; Perrin, P.; Petruccetti, M.; Petta, C.; Piattelli, P.; Poinsignon, J.; Potheau, R.; Queinec, Y.; Racca, C.; Raia, G.; Randazzo, N.; Rethore, F.; Riccobene, G.; Ricol, J.-S.; Ripani, M.; Roca-Blay, V.; Rolin, J.F.; Rostovstev, A.; Russo, G.V.; Sacquin, Y.; Salusti, E.; Schuller, J.-P.; Schuster, W.; Soirat, J.-P.; Souvorova, O.; Spooner, N.J.C.; Spurio, M.; Stolarczyk, T.; Stubert, D.; Taiuti, M.; Tao, C.; Tayalati, Y.; Thompson, L.F.; Tilav, S.; Triay, R.; Valente, V.; Varlamov, I.; Vaudaine, G.; Vernin, P.; Witt Huberts, P. de; Wolf, E. de; Zakharov, V.; Zavatarelli, S.; D Zornoza, J. de; Zuniga, J.

    2002-01-01

    The ANTARES collaboration is building a deep sea neutrino telescope in the Mediterranean Sea. This detector will cover a sensitive area of typically 0.1 km 2 and will be equipped with about 1000 optical modules. Each of these optical modules consists of a large area photomultiplier and its associated electronics housed in a pressure resistant glass sphere. The design of the ANTARES optical module, which is a key element of the detector, has been finalized following extensive R and D studies and is reviewed here in detail

  1. Fundamentals of attosecond optics

    Chang, Zenghu

    2011-01-01

    Attosecond optical pulse generation, along with the related process of high-order harmonic generation, is redefining ultrafast physics and chemistry. A practical understanding of attosecond optics requires significant background information and foundational theory to make full use of these cutting-edge lasers and advance the technology toward the next generation of ultrafast lasers. Fundamentals of Attosecond Optics provides the first focused introduction to the field. The author presents the underlying concepts and techniques required to enter the field, as well as recent research advances th

  2. Principles of Optics

    Born, Max; Wolf, Emil

    1999-10-01

    Principles of Optics is one of the classic science books of the twentieth century, and probably the most influential book in optics published in the past forty years. This edition has been thoroughly revised and updated, with new material covering the CAT scan, interference with broad-band light and the so-called Rayleigh-Sommerfeld diffraction theory. This edition also details scattering from inhomogeneous media and presents an account of the principles of diffraction tomography to which Emil Wolf has made a basic contribution. Several new appendices are also included. This new edition will be invaluable to advanced undergraduates, graduate students and researchers working in most areas of optics.

  3. Optics and children

    Costa, Manuel F M; De Campos, J Ayres; Lira, Madalena; Franco, Sandra; Vazquez-Dorrio, Jose B

    2011-01-01

    Light and Optics are subjects that 'naturally' attracts the interest and sympathy of children even from very early ages. In this communication, we present a series of experiments and support material designed in this hands-on perspective, to be used to introduce the study of light and optics to kindergarten and early basic school students. Our hands-on investigative approach leads the students, aged 4 to 10 years, to observe the experiment and discover themselves, in a critical and active way, different aspects of light and optics. Preparing funny eye catching situations and experiments predispose the children to work, effectively, enjoying themselves while building up their self-confidence.

  4. Optical recording medium

    Andriech, A.; Bivol, V.; Tridukh, G.; Tsiuleanu, D.

    2002-01-01

    The invention relates of the micro- and optoelectronics, computer engineering ,in particular, to tjhe optical information media and may be used in hilography. Summary of the invention consists in that the optical image recording medium, containing a dielectric substrates, onto one surface of which there are placed in series a transparent electricity conducting layer, a photo sensitive recording layer of chalcogenic glass and a thin film electrode of aluminium, is provided with an optically transparent protective layer, applied into the thin film electrode. The result of the invention consists in excluding the dependence of chemical processes course into the medium upon environmental conditions

  5. Scalable optical quantum computer

    Manykin, E A; Mel' nichenko, E V [Institute for Superconductivity and Solid-State Physics, Russian Research Centre ' Kurchatov Institute' , Moscow (Russian Federation)

    2014-12-31

    A way of designing a scalable optical quantum computer based on the photon echo effect is proposed. Individual rare earth ions Pr{sup 3+}, regularly located in the lattice of the orthosilicate (Y{sub 2}SiO{sub 5}) crystal, are suggested to be used as optical qubits. Operations with qubits are performed using coherent and incoherent laser pulses. The operation protocol includes both the method of measurement-based quantum computations and the technique of optical computations. Modern hybrid photon echo protocols, which provide a sufficient quantum efficiency when reading recorded states, are considered as most promising for quantum computations and communications. (quantum computer)

  6. Scalable optical quantum computer

    Manykin, E A; Mel'nichenko, E V

    2014-01-01

    A way of designing a scalable optical quantum computer based on the photon echo effect is proposed. Individual rare earth ions Pr 3+ , regularly located in the lattice of the orthosilicate (Y 2 SiO 5 ) crystal, are suggested to be used as optical qubits. Operations with qubits are performed using coherent and incoherent laser pulses. The operation protocol includes both the method of measurement-based quantum computations and the technique of optical computations. Modern hybrid photon echo protocols, which provide a sufficient quantum efficiency when reading recorded states, are considered as most promising for quantum computations and communications. (quantum computer)

  7. Theory of optical flashes

    London, R.A.

    1983-01-01

    The theory of optical flashes created by x- and γ-ray burst heating of stars in binaries is reviewed. Calculations of spectra due to steady-state x-ray reprocessing and estimates of the fundamental time scales for the non-steady case are discussed. The results are applied to the extant optical data from x-ray and γ-ray bursters. Finally, I review predictions of flashes from γ-ray bursters detectable by a state of the art all-sky optical monitor

  8. The ANTARES Optical Module

    Amram, P; Anvar, S; Ardellier-Desages, F E; Aslanides, Elie; Aubert, Jean-Jacques; Azoulay, R; Bailey, D; Basa, S; Battaglieri, M; Bellotti, R; Benhammou, Ya; Bernard, F; Berthier, R; Bertin, V; Billault, M; Blaes, R; Bland, R W; Blondeau, F; De Botton, N R; Boulesteix, J; Brooks, B; Brunner, J; Cafagna, F; Calzas, A; Capone, A; Caponetto, L; Cârloganu, C; Carmona, E; Carr, J; Carton, P H; Cartwright, S L; Cassol, F; Cecchini, S; Ciacio, F; Circella, M; Compere, C; Cooper, S; Coyle, P; Croquette, J; Cuneo, S; Danilov, M; Van Dantzig, R; De Marzo, C; De Vita, R; Deck, P; Destelle, J J; Dispau, G; Drougou, J F; Druillole, F; Engelen, J; Feinstein, F; Festy, D; Fopma, J; Gallone, J M; Giacomelli, G; Goret, P; Gosset, L G; Gournay, J F; Heijboer, A; Hernández-Rey, J J; Herrouin, G; Hubbard, John R; Jacquet, M; De Jong, M; Karolak, M; Kooijman, P M; Kouchner, A; Kudryavtsev, V A; Lachartre, D; Lafoux, H; Lamare, P; Languillat, J C; Laubier, L; Laugier, J P; Le Guen, Y; Le Provost, H; Le Van-Suu, A; Lemoine, L; Lo Nigro, L; Lo Presti, D; Loucatos, Sotirios S; Louis, F; Lyashuk, V I; Magnier, P; Marcelin, M; Margiotta, A; Massol, A; Masullo, R; Mazéas, F; Mazeau, B; Mazure, A; McMillan, J E; Michel, J L; Migneco, E; Millot, C; Mols, P; Montanet, François; Montaruli, T; Morel, J P; Moscoso, L; Navas, S; Nezri, E; Nooren, G J L; Oberski, J; Olivetto, C; Oppelt-pohl, A; Palanque-Delabrouille, Nathalie; Payre, P; Perrin, P; Petruccetti, M; Petta, P; Piattelli, P; Poinsignon, J; Popa, V; Potheau, R; Queinec, Y; Racca, C; Raia, G; Randazzo, N; Rethore, F; Riccobene, G; Ricol, J S; Ripani, M; Roca-Blay, V; Rolin, J F; Rostovtsev, A A; Russo, G V; Sacquin, Yu; Salusti, E; Schuller, J P; Schuster, W; Soirat, J P; Suvorova, O; Spooner, N J C; Spurio, M; Stolarczyk, T; Stubert, D; Taiuti, M; Tao, Charling; Tayalati, Y; Thompson, L F; Tilav, S; Triay, R; Valente, V; Varlamov, I; Vaudaine, G; Vernin, P; De Witt-Huberts, P K A; De Wolf, E; Zakharov, V; Zavatarelli, S; De Dios-Zornoza-Gomez, Juan; Zúñiga, J

    2002-01-01

    The ANTARES collaboration is building a deep sea neutrino telescope in the Mediterranean Sea. This detector will cover a sensitive area of typically 0.1 km-squared and will be equipped with about 1000 optical modules. Each of these optical modules consists of a large area photomultiplier and its associated electronics housed in a pressure resistant glass sphere. The design of the ANTARES optical module, which is a key element of the detector, has been finalized following extensive R & D studies and is reviewed here in detail.

  9. Wireless optical telecommunications

    Bouchet, Olivier

    2013-01-01

    Wireless optical communication refers to communication based on the unguided propagation of optical waves. The past 30 years have seen significant improvements in this technique - a wireless communication solution for the current millennium - that offers an alternative to radio systems; a technique that could gain attractiveness due to recent concerns regarding the potential effects of radiofrequency waves on human health.The aim of this book is to look at the free space optics that are already used for the exchange of current information; its many benefits, such as incorporating chan

  10. Handbook of optical microcavities

    Choi, Anthony H W

    2014-01-01

    An optical cavity confines light within its structure and constitutes an integral part of a laser device. Unlike traditional gas lasers, semiconductor lasers are invariably much smaller in dimensions, making optical confinement more critical than ever. In this book, modern methods that control and manipulate light at the micrometer and nanometer scales by using a variety of cavity geometries and demonstrate optical resonance from ultra-violet (UV) to infra-red (IR) bands across multiple material platforms are explored. The book has a comprehensive collection of chapters that cover a wide range

  11. Optical properties of solids

    Wooten, Frederick

    1972-01-01

    Optical Properties of Solids covers the important concepts of intrinsic optical properties and photoelectric emission. The book starts by providing an introduction to the fundamental optical spectra of solids. The text then discusses Maxwell's equations and the dielectric function; absorption and dispersion; and the theory of free-electron metals. The quantum mechanical theory of direct and indirect transitions between bands; the applications of dispersion relations; and the derivation of an expression for the dielectric function in the self-consistent field approximation are also encompassed.

  12. Theoretical Optics An Introduction

    Römer, Hartmann

    2004-01-01

    Starting from basic electrodynamics, this volume provides a solid, yet concise introduction to theoretical optics, containing topics such as nonlinear optics, light-matter interaction, and modern topics in quantum optics, including entanglement, cryptography, and quantum computation. The author, with many years of experience in teaching and research, goes way beyond the scope of traditional lectures, enabling readers to keep up with the current state of knowledge. Both content and presentation make it essential reading for graduate and phD students as well as a valuable reference for researche

  13. Optical Computing Research.

    1987-10-30

    1489-1496, 1985. 13. W.T. Welford and R. Winston, The Optics of Nonimaging Concentrators, Academic Press, New York, N.Y., 1978 (see Appendix A). 14. R.H...AD-fIB? Ŗ OPTICAL CONPIITINO RESEAIRCII(U STANFORD UlNIV CA STINFORD / ELECTRONICS LASS J N 0000W4 30 OCT 97 SMAFOSR-TR-S?-1635 RFOSR-96...Force Base ELEMENT NO. NO. NO. NO. Washington, DC 20332-6448 11. TITLE ,Include Security ClaaticaonUNCLASSIFIED 61102F 2305 B4 OPTICAL COMPUTING RESEARCH

  14. Optical RISC computer

    Guilfoyle, Peter S.; Stone, Richard V.; Hessenbruch, John M.; Zeise, Frederick F.

    1993-07-01

    A second generation digital optical computer (DOC II) has been developed which utilizes a RISC based operating system as its host. This 32 bit, high performance (12.8 GByte/sec), computing platform demonstrates a number of basic principals that are inherent to parallel free space optical interconnects such as speed (up to 1012 bit operations per second) and low power 1.2 fJ per bit). Although DOC II is a general purpose machine, special purpose applications have been developed and are currently being evaluated on the optical platform.

  15. Realization of an optical interferometer based on holographic optics ...

    The paper describes a simple and cost effective method for the realization of an optical interferometer based on holographic optics, which use minimal bulk optical components. The optical arrangement in the proposed method involves a very simple alignment procedure and inexpensive holographic recording material is ...

  16. Metrology for Freeform Optics

    National Aeronautics and Space Administration — Science requirements for optical instrumentation are requiring larger fields of view and faster f-numbers to complete their objectives.   Additionally, opportunities...

  17. Optical spark chamber

    CERN PhotoLab

    1971-01-01

    An optical spark chamber developed for use in the Omega spectrometer. On the left the supporting frame is exceptionally thin to allow low momentum particles to escape and be detected outside the magnetic field.

  18. Photostable nonlinear optical polycarbonates

    Faccini, M.; Balakrishnan, M.; Diemeer, Mart; Torosantucci, Riccardo; Driessen, A.; Reinhoudt, David; Verboom, Willem

    2008-01-01

    Highly thermal and photostable nonlinear optical polymers were obtained by covalently incorporating the tricyanovinylidenediphenylaminobenzene (TCVDPA) chromophore to a polycarbonate backbone. NLO polycarbonates with different chromophore attachment modes and flexibilities were synthesized. In spite

  19. Problems in optics

    Rousseau, Madeleine; Ter Haar, D

    1973-01-01

    This collection of problems and accompanying solutions provide the reader with a full introduction to physical optics. The subject coverage is fairly traditional, with chapters on interference and diffraction, and there is a general emphasis on spectroscopy.

  20. Electroabsorption optical modulator

    Skogen, Erik J.

    2017-11-21

    An electroabsorption modulator incorporates waveguiding regions along the length of the modulator that include quantum wells where at least two of the regions have quantum wells with different bandgaps. In one embodiment of the invention, the regions are arranged such that the quantum wells have bandgaps with decreasing bandgap energy along the length of the modulator from the modulator's input to its output. The bandgap energy of the quantum wells may be decreased in discrete steps or continuously. Advantageously, such an arrangement better distributes the optical absorption as well as the carrier density along the length of the modulator. Further advantageously, the modulator may handle increased optical power as compared with prior art modulators of similar dimensions, which allows for improved link gain when the optical modulator is used in an analog optical communication link.

  1. Optical fiber switch

    Early, James W.; Lester, Charles S.

    2002-01-01

    Optical fiber switches operated by electrical activation of at least one laser light modulator through which laser light is directed into at least one polarizer are used for the sequential transport of laser light from a single laser into a plurality of optical fibers. In one embodiment of the invention, laser light from a single excitation laser is sequentially transported to a plurality of optical fibers which in turn transport the laser light to separate individual remotely located laser fuel ignitors. The invention can be operated electro-optically with no need for any mechanical or moving parts, or, alternatively, can be operated electro-mechanically. The invention can be used to switch either pulsed or continuous wave laser light.

  2. Optic Nerve Imaging

    ... News About Us Donate In This Section Optic Nerve Imaging email Send this article to a friend ... measurements of nerve fiber damage (or loss). The Nerve Fiber Analyzer (GDx) uses laser light to measure ...

  3. Optics With Cold Atoms

    Hau, Lene

    2004-01-01

    .... And to test the novel atom sensor, we have built a moving-molasses magneto-optical trap in a geometry tailor-suited to the nanotube detector geometry, involving construction of a highly stable laser...

  4. Nonlinear Optical Terahertz Technology

    National Aeronautics and Space Administration — We develop a new approach to generation of THz radiation. Our method relies on mixing two optical frequency beams in a nonlinear crystalline Whispering Gallery Mode...

  5. Optical Polarizationin Biomedical Applications

    Tuchin, Valery V; Zimnyakov, Dmitry A

    2006-01-01

    Optical Polarization in Biomedical Applications introduces key developments in optical polarization methods for quantitative studies of tissues, while presenting the theory of polarization transfer in a random medium as a basis for the quantitative description of polarized light interaction with tissues. This theory uses the modified transfer equation for Stokes parameters and predicts the polarization structure of multiple scattered optical fields. The backscattering polarization matrices (Jones matrix and Mueller matrix) important for noninvasive medical diagnostic are introduced. The text also describes a number of diagnostic techniques such as CW polarization imaging and spectroscopy, polarization microscopy and cytometry. As a new tool for medical diagnosis, optical coherent polarization tomography is analyzed. The monograph also covers a range of biomedical applications, among them cataract and glaucoma diagnostics, glucose sensing, and the detection of bacteria.

  6. Optical wear monitoring

    Kidane, Getnet S; Desilva, Upul P.; He, Chengli; Ulerich, Nancy H.

    2016-07-26

    A gas turbine includes first and second parts having outer surfaces located adjacent to each other to create an interface where wear occurs. A wear probe is provided for monitoring wear of the outer surface of the first part, and includes an optical guide having first and second ends, wherein the first end is configured to be located flush with the outer surface of the first part. A fiber bundle includes first and second ends, the first end being located proximate to the second end of the optical guide. The fiber bundle includes a transmit fiber bundle comprising a first plurality of optical fibers coupled to a light source, and a receive fiber bundle coupled to a light detector and configured to detect reflected light. A processor is configured to determine a length of the optical guide based on the detected reflected light.

  7. Radiation optic neuropathy

    Kline, L.B.; Kim, J.Y.; Ceballos, R.

    1985-01-01

    Following surgery for pituitary adenoma, radiation therapy is an accepted treatment in reducing tumor recurrence. However, a potential therapeutic complication is delayed radionecrosis of perisellar neural structures, including the optic nerves and chiasm. This particular cause of visual loss, radiation optic neuropathy (RON), has not been emphasized in the ophthalmologic literature. Four cases of RON seen in the past five years are reported. Diagnostic criteria include: (1) acute visual loss (monocular or binocular), (2) visual field defects indicating optic nerve or chiasmal dysfunction, (3) absence of optic disc edema, (4) onset usually within three years of therapy (peak: 1-1 1/2 years), and (5) no computed tomographic evidence of visual pathway compression. Pathologic findings, differential diagnosis and therapy will be discussed in outlining the clinical profile of RON

  8. Stereoscopic optical viewing system

    Tallman, C.S.

    1986-05-02

    An improved optical system which provides the operator with a stereoscopic viewing field and depth of vision, particularly suitable for use in various machines such as electron or laser beam welding and drilling machines. The system features two separate but independently controlled optical viewing assemblies from the eyepiece to a spot directly above the working surface. Each optical assembly comprises a combination of eye pieces, turning prisms, telephoto lenses for providing magnification, achromatic imaging relay lenses and final stage pentagonal turning prisms. Adjustment for variations in distance from the turning prisms to the workpiece, necessitated by varying part sizes and configurations and by the operator's visual accuity, is provided separately for each optical assembly by means of separate manual controls at the operator console or within easy reach of the operator.

  9. Fiber Optics: No Illusion.

    American School and University, 1983

    1983-01-01

    A campus computer center at Hofstra University (New York) that holds 70 terminals for student use was first a gymnasium, then a language laboratory. Strands of fiber optics are used for the necessary wiring. (MLF)

  10. Towards Improved Optical Limiters

    Huffman, Peter

    2002-01-01

    .... The first approach was to synthesize and study soluble thallium phthalocyanines. Thallium, due to its proximity to lead and indium on the periodic table, should exhibit favorable optical limiting properties...

  11. Wearable Optical Sensors

    Ballard, Zachary S.; Ozcan, Aydogan

    2017-01-01

    The market for wearable sensors is predicted to grow to $5.5 billion by 2025, impacting global health in unprecedented ways. Optics and photonics will play a key role in the future of these wearable technologies, enabling highly sensitive

  12. Intracoronary optical coherence tomography

    Tenekecioglu, Erhan; Albuquerque, Felipe N; Sotomi, Yohei

    2017-01-01

    By providing valuable information about the coronary artery wall and lumen, intravascular imaging may aid in optimizing interventional procedure results and thereby could improve clinical outcomes following percutaneous coronary intervention (PCI). Intravascular optical coherence tomography (OCT...

  13. Newton's Contributions to Optics

    creativity is apparent, even in ideas and models in optics that were ... Around Newton's time, a number of leading figures in science ..... successive circles increased as integers, i.e. d increases by inte- ... of easy reflections and transmission".

  14. Optics of Nanofibers

    Bordo, Vladimir

    During the last decade, fabrication and investigation of submicron-sized optical fibers have been received growing attention. Such nanofibers or nanowires can be grown from both inorganic and organic semiconductor materials being arranged in mutually parallel nanoaggregates. Also, selected...

  15. Optical adhesive property study

    Sundvold, P.D.

    1996-01-01

    Tests were performed to characterize the mechanical and thermal properties of selected optical adhesives to identify the most likely candidate which could survive the operating environment of the Direct Optical Initiation (DOI) program. The DOI system consists of a high power laser and an optical module used to split the beam into a number of channels to initiate the system. The DOI requirements are for a high shock environment which current military optical systems do not operate. Five candidate adhesives were selected and evaluated using standardized test methods to determine the adhesives` physical properties. EC2216, manufactured by 3M, was selected as the baseline candidate adhesive based on the test results of the physical properties.

  16. Fiber optic fluid detector

    Angel, S.M.

    1987-02-27

    Particular gases or liquids are detected with a fiber optic element having a cladding or coating of a material which absorbs the fluid or fluids and which exhibits a change of an optical property, such as index of refraction, light transmissiveness or fluoresence emission, for example, in response to absorption of the fluid. The fluid is sensed by directing light into the fiber optic element and detecting changes in the light, such as exit angle changes for example, that result from the changed optical property of the coating material. The fluid detector may be used for such purposes as sensing toxic or explosive gases in the atmosphere, measuring ground water contamination or monitoring fluid flows in industrial processes, among other uses. 10 figs.

  17. Problems in Geometrical Optics

    Joyce, L. S.

    1973-01-01

    Ten laboratory exercises on optics are described to clarify concepts involving point objects and converging lenses producing real images. Mathematical treatment is kept to a minimum to stress concepts involved. (PS)

  18. Stunningly bright optical emission

    Heinke, Craig O.

    2017-12-01

    The detection of bright, rapid optical pulsations from pulsar PSR J1023+0038 have provided a surprise for researchers working on neutron stars. This discovery poses more questions than it answers and will spur on future work and instrumentation.

  19. Scatter from optical components

    Stover, J.C.

    1989-01-01

    This book is covered under the following topics: measurement and analysis techniques; BRDF standards, comparisons, and anomalies; scatter measurement of several materials; scatter from contaminations; and optical system contamination: effects, measurement, and control

  20. Fiber optic fluid detector

    Angel, S. Michael

    1989-01-01

    Particular gases or liquids are detected with a fiber optic element (11, 11a to 11j) having a cladding or coating of a material (23, 23a to 23j) which absorbs the fluid or fluids and which exhibits a change of an optical property, such as index of refraction, light transmissiveness or fluoresence emission, for example, in response to absorption of the fluid. The fluid is sensed by directing light into the fiber optic element and detecting changes in the light, such as exit angle changes for example, that result from the changed optical property of the coating material. The fluid detector (24, 24a to 24j) may be used for such purposes as sensing toxic or explosive gases in the atmosphere, measuring ground water contamination or monitoring fluid flows in industrial processes, among other uses.

  1. Digital optical computer II

    Guilfoyle, Peter S.; Stone, Richard V.

    1991-12-01

    OptiComp is currently completing a 32-bit, fully programmable digital optical computer (DOC II) that is designed to operate in a UNIX environment running RISC microcode. OptiComp's DOC II architecture is focused toward parallel microcode implementation where data is input in a dual rail format. By exploiting the physical principals inherent to optics (speed and low power consumption), an architectural balance of optical interconnects and software code efficiency can be achieved including high fan-in and fan-out. OptiComp's DOC II program is jointly sponsored by the Office of Naval Research (ONR), the Strategic Defense Initiative Office (SDIO), NASA space station group and Rome Laboratory (USAF). This paper not only describes the motivational basis behind DOC II but also provides an optical overview and architectural summary of the device that allows the emulation of any digital instruction set.

  2. Optical fiber communications

    Keiser, Gerd

    2008-01-01

    The fourth edition of this popular text and reference book presents the fundamental principles for understanding and applying optical fiber technology to sophisticated modern telecommunication systems. Optical-fiber-based telecommunication networks have become a major information-transmission-system, with high capacity links encircling the globe in both terrestrial and undersea installations. Numerous passive and active optical devices within these links perform complex transmission and networking functions in the optical domain, such as signal amplification, restoration, routing, and switching. Along with the need to understand the functions of these devices comes the necessity to measure both component and network performance, and to model and stimulate the complex behavior of reliable high-capacity networks.

  3. Roadmap on optical security

    Javidi, Bahram; Carnicer, Artur; Yamaguchi, Masahiro; Nomura, Takanori; Pérez-Cabré, Elisabet; Millán, María S.; Nishchal, Naveen K.; Torroba, Roberto; Fredy Barrera, John; He, Wenqi; Peng, Xiang; Stern, Adrian; Rivenson, Yair; Alfalou, A.; Brosseau, C.; Guo, Changliang; Sheridan, John T.; Situ, Guohai; Naruse, Makoto; Matsumoto, Tsutomu; Juvells, Ignasi; Tajahuerce, Enrique; Lancis, Jesús; Chen, Wen; Chen, Xudong; Pinkse, Pepijn W. H.; Mosk, Allard P.; Markman, Adam

    2016-08-01

    Information security and authentication are important challenges facing society. Recent attacks by hackers on the databases of large commercial and financial companies have demonstrated that more research and development of advanced approaches are necessary to deny unauthorized access to critical data. Free space optical technology has been investigated by many researchers in information security, encryption, and authentication. The main motivation for using optics and photonics for information security is that optical waveforms possess many complex degrees of freedom such as amplitude, phase, polarization, large bandwidth, nonlinear transformations, quantum properties of photons, and multiplexing that can be combined in many ways to make information encryption more secure and more difficult to attack. This roadmap article presents an overview of the potential, recent advances, and challenges of optical security and encryption using free space optics. The roadmap on optical security is comprised of six categories that together include 16 short sections written by authors who have made relevant contributions in this field. The first category of this roadmap describes novel encryption approaches, including secure optical sensing which summarizes double random phase encryption applications and flaws [Yamaguchi], the digital holographic encryption in free space optical technique which describes encryption using multidimensional digital holography [Nomura], simultaneous encryption of multiple signals [Pérez-Cabré], asymmetric methods based on information truncation [Nishchal], and dynamic encryption of video sequences [Torroba]. Asymmetric and one-way cryptosystems are analyzed by Peng. The second category is on compression for encryption. In their respective contributions, Alfalou and Stern propose similar goals involving compressed data and compressive sensing encryption. The very important area of cryptanalysis is the topic of the third category with two sections

  4. Magneto-Optic Field Coupling in Optical Fiber Bragg Gratings

    Carman, Gregory P. (Inventor); Mohanchandra, Panduranga K. (Inventor); Emmons, Michael C. (Inventor); Richards, William Lance (Inventor)

    2016-01-01

    The invention is a magneto-optic coupled magnetic sensor that comprises a standard optical fiber Bragg grating system. The system includes an optical fiber with at least one Bragg grating therein. The optical fiber has at least an inner core and a cladding that surrounds the inner core. The optical fiber is part of an optical system that includes an interrogation device that provides a light wave through the optical fiber and a system to determine the change in the index of refraction of the optical fiber. The cladding of the optical fiber comprises at least a portion of which is made up of ferromagnetic particles so that the ferromagnetic particles are subject to the light wave provided by the interrogation system. When a magnetic field is present, the ferromagnetic particles change the optical properties of the sensor directly.

  5. Reconfigurable optical-to-optical frequency conversion method and apparatus

    Zortman, William A.; Lentine, Anthony L.

    2017-04-18

    A photonic device is provided for impressing a modulation pattern on an optical carrier. The device includes a unit in which a photodetector and an optical microresonator are monolithically integrated. The device further includes an optical waveguide evanescently coupled to the optical microresonator and having at least an upstream portion configured to carry at least one optical carrier toward the microresonator. The optical microresonator is tunable so as to resonate with the optical carrier frequency. The optical microresonator and the photodetector are mutually coupled such that in operation, charge carriers photogenerated in the photodetector are injected into the microresonator, where the photocurrent changes the resonant conditions. In some embodiments the device is operable as an optical-to-optical frequency converter. In other embodiments the device is operable as an oscillator.

  6. Noise in Optical Amplifiers

    Jeppesen, Palle

    1997-01-01

    Noise in optical amplifiers is discussed on the basis of photons and electromagntic fields. Formulas for quantum noise from spontaneous emission, signal-spontaneous beat noise and spontaneous-spontaneous beat noise are derived.......Noise in optical amplifiers is discussed on the basis of photons and electromagntic fields. Formulas for quantum noise from spontaneous emission, signal-spontaneous beat noise and spontaneous-spontaneous beat noise are derived....

  7. Optical remote sensing

    Prasad, Saurabh; Chanussot, Jocelyn

    2011-01-01

    Optical remote sensing relies on exploiting multispectral and hyper spectral imagery possessing high spatial and spectral resolutions respectively. These modalities, although useful for most remote sensing tasks, often present challenges that must be addressed for their effective exploitation. This book presents current state-of-the-art algorithms that address the following key challenges encountered in representation and analysis of such optical remotely sensed data: challenges in pre-processing images, storing and representing high dimensional data, fusing different sensor modalities, patter

  8. Optic nerve oxygen tension

    la Cour, M; Kiilgaard, Jens Folke; Eysteinsson, T

    2000-01-01

    To investigate the influence of acute changes in intraocular pressure on the oxygen tension in the vicinity of the optic nerve head under control conditions and after intravenous administration of 500 mg of the carbonic anhydrase inhibitor dorzolamide.......To investigate the influence of acute changes in intraocular pressure on the oxygen tension in the vicinity of the optic nerve head under control conditions and after intravenous administration of 500 mg of the carbonic anhydrase inhibitor dorzolamide....

  9. Regeneration of Optic Nerve

    Kwok-Fai So

    2011-05-01

    Full Text Available The optic nerve is part of the central nervous system (CNS and has a structure similar to other CNS tracts. The axons that form the optic nerve originate in the ganglion cell layer of the retina and extend through the optic tract. As a tissue, the optic nerve has the same organization as the white matter of the brain in regard to its glia. There are three types of glial cells: Oligodendrocytes, astrocytes, and microglia. Little structural and functional regeneration of the CNS takes place spontaneously following injury in adult mammals. In contrast, the ability of the mammalian peripheral nervous system (PNS to regenerate axons after injury is well documented. A number of factors are involved in the lack of CNS regeneration, including: (i the response of neuronal cell bodies against the damage; (ii myelin-mediated inhibition by oligodendrocytes; (iii glial scarring, by astrocytes; (iv macrophage infiltration; and (v insufficient trophic factor support. The fundamental difference in the regenerative capacity between CNS and PNS neuronal cell bodies has been the subject of intensive research. In the CNS the target normally conveys a retrograde trophic signal to the cell body. CNS neurons die because of trophic deprivation. Damage to the optic nerve disconnects the neuronal cell body from its target-derived trophic peptides, leading to the death of retinal ganglion cells. Furthermore, the axontomized neurons become less responsive to the peptide trophic signals they do receive. On the other hand, adult PNS neurons are intrinsically responsive to neurotrophic factors and do not lose trophic responsiveness after axotomy. In this talk different strategies to promote optic-nerve regeneration in adult mammals are reviewed. Much work is still needed to resolve many issues. This is a very important area of neuroregeneration and neuroprotection, as currently there is no cure after traumatic optic nerve injury or retinal disease such as glaucoma, which

  10. Fiber optics welder

    Higgins, R.W.; Robichaud, R.E.

    A system is described for welding fiber optic waveguides together. The ends of the two fibers to be joined together are accurately, collinearly aligned in a vertical orientation and subjected to a controlled, diffuse arc to effect welding and thermal conditioning. A front-surfaced mirror mounted at a 45/sup 0/ angle to the optical axis of a stereomicroscope mounted for viewing the junction of the ends provides two orthogonal views of the interface during the alignment operation.

  11. Nonlinear fibre optics overview

    Travers, J. C.; Frosz, Michael Henoch; Dudley, J. M.

    2010-01-01

    The optical fiber based supercontinuum source has recently become a significant scientific and commercial success, with applications ranging from frequency comb production to advanced medical imaging. This one-of-a-kind book explains the theory of fiber supercontinuum broadening, describes......, provides a background to the associated nonlinear optical processes, treats the generation mechanisms from continuous wave to femtosecond pulse pump regimes and highlights the diverse applications. A full discussion of numerical methods and comprehensive computer code are also provided, enabling readers...

  12. Spiral nonimaging optical designs

    Zamora Herranz, Pablo; Benitez Gimenez, Pablo; Miñano Dominguez, Juan Carlos; Vilaplana, J.

    2011-01-01

    Manufacturing technologies as injection molding or embossing specify their production limits for minimum radii of the vertices or draft angle for demolding, for instance. In some demanding nonimaging applications, these restrictions may limit the system optical efficiency or affect the generation of undesired artifacts on the illumination pattern. A novel manufacturing concept is presented here, in which the optical surfaces are not obtained from the usual revolution symmetry with res...

  13. Optical waveguide demultiplexer

    Gajdaj, Yu.O.; Maslyukyivs'kij, R.M.; Sirota, A.V.

    2009-01-01

    For channels division in fibre-optical networks with wavelength multiplexing, the planar waveguide together with a prism coupler is offered for using. The planar waveguide fulfils a role of a dispersing unit, and prism coupler is the selector of optical channels. The parameters of the planar waveguide which provide maximal space division of adjacent information channels in networks with coarse wavelength multiplexing are calculated

  14. Cognitive Dynamic Optical Networks

    de Miguel, Ignacio; Duran, Ramon J.; Lorenzo, Ruben M.

    2013-01-01

    Cognitive networks are a promising solution for the control of heterogeneous optical networks. We review their fundamentals as well as a number of applications developed in the framework of the EU FP7 CHRON project.......Cognitive networks are a promising solution for the control of heterogeneous optical networks. We review their fundamentals as well as a number of applications developed in the framework of the EU FP7 CHRON project....

  15. Basic accelerator optics

    CERN. Geneva. Audiovisual Unit

    1985-01-01

    A complete derivation, from first principles, of the concepts and methods applied in linear accelerator and beamline optics will be presented. Particle motion and beam motion in systems composed of linear magnets, as well as weak and strong focusing and special insertions are treated in mathematically simple terms, and design examples for magnets and systems are given. This series of five lectures is intended to provide all the basic tools required for the design and operation of beam optical systems.

  16. Fish eye optics

    Hudec, René; Michalová, S.

    2017-01-01

    Roč. 47, č. 2 (2017), s. 94-99 ISSN 1335-1842. [INTEGRAL/BART Workshop /14./. Karlovy Vary, 03.04.2017-07.04.2017] Grant - others:GA ČR(CZ) GA13-33324S Institutional support: RVO:67985815 Keywords : fish eye optics * lobster eye optics * X-ray monitoring Subject RIV: BN - Astronomy, Celestial Mechanics, Astrophysics OBOR OECD: Astronomy (including astrophysics,space science) Impact factor: 0.336, year: 2016

  17. Multiaperture Optical System Research.

    1987-11-06

    pp. 179-185 (1965). 6. Welford, W. T. and Winston , R., The Optics of Nonimaging Concentrators , P. 3, Academic Press, New York (1978). 7. Schneider, R...Welford and Winston investigated it was a possible concentrator for solar energy. They came up with the "ideal concentrator ", which has walls shaped...MULTIAPZRTURE OPTICAL SYSTEM RESEARCH ." Office of Naval Research Contract Number N00014-85-C-0862 . FINAL REPORT by RTS LABORATORIES, INC. 1663

  18. Fiber Optic Microphone

    Cho, Y. C.; George, Thomas; Norvig, Peter (Technical Monitor)

    1999-01-01

    Research into advanced pressure sensors using fiber-optic technology is aimed at developing compact size microphones. Fiber optic sensors are inherently immune to electromagnetic noise, and are very sensitive, light weight, and highly flexible. In FY 98, NASA researchers successfully designed and assembled a prototype fiber-optic microphone. The sensing technique employed was fiber optic Fabry-Perot interferometry. The sensing head is composed of an optical fiber terminated in a miniature ferrule with a thin, silicon-microfabricated diaphragm mounted on it. The optical fiber is a single mode fiber with a core diameter of 8 micron, with the cleaved end positioned 50 micron from the diaphragm surface. The diaphragm is made up of a 0.2 micron thick silicon nitride membrane whose inner surface is metallized with layers of 30 nm titanium, 30 nm platinum, and 0.2 micron gold for efficient reflection. The active sensing area is approximately 1.5 mm in diameter. The measured differential pressure tolerance of this diaphragm is more than 1 bar, yielding a dynamic range of more than 100 dB.

  19. Reciprocity in optics

    Potton, R J

    2004-01-01

    The application of reciprocity principles in optics has a long history that goes back to Stokes, Lorentz, Helmholtz and others. Moreover, optical applications need to be seen in the context of applications of reciprocity in particle scattering, acoustics, seismology and the solution of inverse problems, generally. In some of these other fields vector wave propagation is, as it is in optics, of the essence. For this reason the simplified approach to light wave polarization developed by, and named for, Jones is explored initially to see how and to what extent it encompasses reciprocity. The characteristic matrix of a uniform dielectric layer, used in the analysis of interference filters and mirrors, is reciprocal except when the layer is magneto-optical. The way in which the reciprocal nature of a characteristic matrix can be recognized is discussed next. After this, work on the influence of more realistic attributes of a dielectric stack on reciprocity is reviewed. Some of the numerous technological applications of magneto-optic non-reciprocal media are identified and the potential of a new class of non-reciprocal components is briefly introduced. Finally, the extension of the classical reciprocity concept to systems containing components that have nonlinear optical response is briefly mentioned

  20. Fiber optic based optical tomography sensor for monitoring plasma uniformity

    Benck, Eric C.; Etemadi, Kasra

    2001-01-01

    A new type of fiber optic based optical tomography sensor has been developed for in situ monitoring of plasma uniformity. Optical tomography inverts optical emission measurements into the actual plasma distribution without assuming radial symmetry. The new sensor is designed to operate with only two small windows and acquire the necessary data in less than a second. Optical tomography is being tested on an ICP-GEC RF plasma source. Variations in plasma uniformity are measured as a function of different plasma conditions

  1. Feasibility of Optical Instruments Based on Multiaperture Optics.

    1984-10-16

    system may be configured. The optical elements may be nonimaging concentrators (light horns), the field of view (FOV) of which may be controlled by a...RD-RI58 868 FEASIBILITY OF OPTICAL INSTRUMENTS BASED ON i/I MULTIAPERTURE OPTICS (U) FLORIDA UNIV GAINESVILLE DEPT OF NUCLEAR ENGINEERING SCIENCES J D...d Subtitle) 5. TYPE OF REPORT & PERIOD COVERED ’ 0 Feasibility of Optical Instruments Based on Final Report * CD Multiaperature Optics 615/83 to 9/30

  2. Roadmap on transformation optics

    McCall, Martin; Pendry, John B.; Galdi, Vincenzo; Lai, Yun; Horsley, S. A. R.; Li, Jensen; Zhu, Jian; Mitchell-Thomas, Rhiannon C.; Quevedo-Teruel, Oscar; Tassin, Philippe; Ginis, Vincent; Martini, Enrica; Minatti, Gabriele; Maci, Stefano; Ebrahimpouri, Mahsa; Hao, Yang; Kinsler, Paul; Gratus, Jonathan; Lukens, Joseph M.; Weiner, Andrew M.; Leonhardt, Ulf; Smolyaninov, Igor I.; Smolyaninova, Vera N.; Thompson, Robert T.; Wegener, Martin; Kadic, Muamer; Cummer, Steven A.

    2018-06-01

    Transformation optics asks, using Maxwell’s equations, what kind of electromagnetic medium recreates some smooth deformation of space? The guiding principle is Einstein’s principle of covariance: that any physical theory must take the same form in any coordinate system. This requirement fixes very precisely the required electromagnetic medium. The impact of this insight cannot be overestimated. Many practitioners were used to thinking that only a few analytic solutions to Maxwell’s equations existed, such as the monochromatic plane wave in a homogeneous, isotropic medium. At a stroke, transformation optics increases that landscape from ‘few’ to ‘infinity’, and to each of the infinitude of analytic solutions dreamt up by the researcher, there corresponds an electromagnetic medium capable of reproducing that solution precisely. The most striking example is the electromagnetic cloak, thought to be an unreachable dream of science fiction writers, but realised in the laboratory a few months after the papers proposing the possibility were published. But the practical challenges are considerable, requiring meta-media that are at once electrically and magnetically inhomogeneous and anisotropic. How far have we come since the first demonstrations over a decade ago? And what does the future hold? If the wizardry of perfect macroscopic optical invisibility still eludes us in practice, then what compromises still enable us to create interesting, useful, devices? While three-dimensional (3D) cloaking remains a significant technical challenge, much progress has been made in two dimensions. Carpet cloaking, wherein an object is hidden under a surface that appears optically flat, relaxes the constraints of extreme electromagnetic parameters. Surface wave cloaking guides sub-wavelength surface waves, making uneven surfaces appear flat. Two dimensions is also the setting in which conformal and complex coordinate transformations are realisable, and the possibilities in

  3. Optical switching systems using nanostructures

    Stubkjær, Kristian

    2004-01-01

    High capacity multiservice optical networks require compact and efficient switches. The potential benefits of optical switch elements based on nanostructured material are reviewed considering various material systems.......High capacity multiservice optical networks require compact and efficient switches. The potential benefits of optical switch elements based on nanostructured material are reviewed considering various material systems....

  4. Fault location in optical networks

    Stevens, Rick C [Apple Valley, MN; Kryzak, Charles J [Mendota Heights, MN; Keeler, Gordon A [Albuquerque, NM; Serkland, Darwin K [Albuquerque, NM; Geib, Kent M [Tijeras, NM; Kornrumpf, William P [Schenectady, NY

    2008-07-01

    One apparatus embodiment includes an optical emitter and a photodetector. At least a portion of the optical emitter extends a radial distance from a center point. The photodetector provided around at least a portion of the optical emitter and positioned outside the radial distance of the portion of the optical emitter.

  5. Optical properties of polymer nanocomposites

    Wintec

    , optical sensors, optical data communication and optical ... our filters (Leon et al 2001), solar cells and optical sen- sors (Tanaka et al 1991; Tokizaki et .... volume fractions (Top panel: tanψ for volume fractions, 1⋅2%. (dash) and 0⋅6% (dot); ...

  6. Fundamentals of nonlinear optical materials

    Nonlinear optics; nonlinear polarization; optical fiber communication; optical switch- ing. PACS Nos 42.65Tg; ... The importance of nonlinear optics is to understand the nonlinear behavior in the induced polarization and to ..... but much work in material development and characterization remains to be done. 16. Conclusion.

  7. Optical design and testing: introduction.

    Liang, Chao-Wen; Koshel, John; Sasian, Jose; Breault, Robert; Wang, Yongtian; Fang, Yi Chin

    2014-10-10

    Optical design and testing has numerous applications in industrial, military, consumer, and medical settings. Assembling a complete imaging or nonimage optical system may require the integration of optics, mechatronics, lighting technology, optimization, ray tracing, aberration analysis, image processing, tolerance compensation, and display rendering. This issue features original research ranging from the optical design of image and nonimage optical stimuli for human perception, optics applications, bio-optics applications, 3D display, solar energy system, opto-mechatronics to novel imaging or nonimage modalities in visible and infrared spectral imaging, modulation transfer function measurement, and innovative interferometry.

  8. Roadmap on optical sensors.

    Ferreira, Mário F S; Castro-Camus, Enrique; Ottaway, David J; López-Higuera, José Miguel; Feng, Xian; Jin, Wei; Jeong, Yoonchan; Picqué, Nathalie; Tong, Limin; Reinhard, Björn M; Pellegrino, Paul M; Méndez, Alexis; Diem, Max; Vollmer, Frank; Quan, Qimin

    2017-08-01

    Sensors are devices or systems able to detect, measure and convert magnitudes from any domain to an electrical one. Using light as a probe for optical sensing is one of the most efficient approaches for this purpose. The history of optical sensing using some methods based on absorbance, emissive and florescence properties date back to the 16th century. The field of optical sensors evolved during the following centuries, but it did not achieve maturity until the demonstration of the first laser in 1960. The unique properties of laser light become particularly important in the case of laser-based sensors, whose operation is entirely based upon the direct detection of laser light itself, without relying on any additional mediating device. However, compared with freely propagating light beams, artificially engineered optical fields are in increasing demand for probing samples with very small sizes and/or weak light-matter interaction. Optical fiber sensors constitute a subarea of optical sensors in which fiber technologies are employed. Different types of specialty and photonic crystal fibers provide improved performance and novel sensing concepts. Actually, structurization with wavelength or subwavelength feature size appears as the most efficient way to enhance sensor sensitivity and its detection limit. This leads to the area of micro- and nano-engineered optical sensors. It is expected that the combination of better fabrication techniques and new physical effects may open new and fascinating opportunities in this area. This roadmap on optical sensors addresses different technologies and application areas of the field. Fourteen contributions authored by experts from both industry and academia provide insights into the current state-of-the-art and the challenges faced by researchers currently. Two sections of this paper provide an overview of laser-based and frequency comb-based sensors. Three sections address the area of optical fiber sensors, encompassing both

  9. Roadmap on optical sensors

    Ferreira, Mário F. S.; Castro-Camus, Enrique; Ottaway, David J.; López-Higuera, José Miguel; Feng, Xian; Jin, Wei; Jeong, Yoonchan; Picqué, Nathalie; Tong, Limin; Reinhard, Björn M.; Pellegrino, Paul M.; Méndez, Alexis; Diem, Max; Vollmer, Frank; Quan, Qimin

    2017-08-01

    Sensors are devices or systems able to detect, measure and convert magnitudes from any domain to an electrical one. Using light as a probe for optical sensing is one of the most efficient approaches for this purpose. The history of optical sensing using some methods based on absorbance, emissive and florescence properties date back to the 16th century. The field of optical sensors evolved during the following centuries, but it did not achieve maturity until the demonstration of the first laser in 1960. The unique properties of laser light become particularly important in the case of laser-based sensors, whose operation is entirely based upon the direct detection of laser light itself, without relying on any additional mediating device. However, compared with freely propagating light beams, artificially engineered optical fields are in increasing demand for probing samples with very small sizes and/or weak light-matter interaction. Optical fiber sensors constitute a subarea of optical sensors in which fiber technologies are employed. Different types of specialty and photonic crystal fibers provide improved performance and novel sensing concepts. Actually, structurization with wavelength or subwavelength feature size appears as the most efficient way to enhance sensor sensitivity and its detection limit. This leads to the area of micro- and nano-engineered optical sensors. It is expected that the combination of better fabrication techniques and new physical effects may open new and fascinating opportunities in this area. This roadmap on optical sensors addresses different technologies and application areas of the field. Fourteen contributions authored by experts from both industry and academia provide insights into the current state-of-the-art and the challenges faced by researchers currently. Two sections of this paper provide an overview of laser-based and frequency comb-based sensors. Three sections address the area of optical fiber sensors, encompassing both

  10. Photometric device using optical fibers

    Boisde, Gilbert; Perez, J.-J.

    1981-02-01

    Remote measurements in radioactive environment are now possible with optical fibers. Measurement instruments developed by CEA are constitued of: - an optical probe (5 mm to 1 meter optical path length), - a photometric measurement device, - optical fiber links. 'TELEPHOT' is a photometric device for industrial installations. It is uses interferentiel filters for 2 to 5 simultaneous wave lengths. 'CRUDMETER' measures the muddiness of water. It can be equipped with a high sensitivity cell of 50 cm optical path length tested up to 250 bars. Coupling a double beam spectrophotometer to a remote optical probe, up to 1 meter optical path length, is carried out by means of an optical device using optical fibers links, eventually several hundred meter long. For these equipments special step index large core fibers, 1 to 1.5 mm in diameter, have been developed as well connectors. For industrial control and research these instruments offer new prospect thanks to optical fibers use [fr

  11. Optical Access Networks

    Zheng, Jun; Ansari, Nirwan

    2005-01-01

    Call for Papers: Optical Access Networks Guest Editors Jun Zheng, University of Ottawa Nirwan Ansari, New Jersey Institute of Technology Submission Deadline: 1 June 2005 Background With the wide deployment of fiber-optic technology over the past two decades, we have witnessed a tremendous growth of bandwidth capacity in the backbone networks of today's telecommunications infrastructure. However, access networks, which cover the "last-mile" areas and serve numerous residential and small business users, have not been scaled up commensurately. The local subscriber lines for telephone and cable television are still using twisted pairs and coaxial cables. Most residential connections to the Internet are still through dial-up modems operating at a low speed on twisted pairs. As the demand for access bandwidth increases with emerging high-bandwidth applications, such as distance learning, high-definition television (HDTV), and video on demand (VoD), the last-mile access networks have become a bandwidth bottleneck in today's telecommunications infrastructure. To ease this bottleneck, it is imperative to provide sufficient bandwidth capacity in the access networks to open the bottleneck and thus present more opportunities for the provisioning of multiservices. Optical access solutions promise huge bandwidth to service providers and low-cost high-bandwidth services to end users and are therefore widely considered the technology of choice for next-generation access networks. To realize the vision of optical access networks, however, many key issues still need to be addressed, such as network architectures, signaling protocols, and implementation standards. The major challenges lie in the fact that an optical solution must be not only robust, scalable, and flexible, but also implemented at a low cost comparable to that of existing access solutions in order to increase the economic viability of many potential high-bandwidth applications. In recent years, optical access networks

  12. Optical Angular Momentum

    Arimondo, Ennio

    2004-01-01

    For many years the Institute of Physics has published books on hot topics based on a collection of reprints from different journals, including some remarks by the editors of each volume. The book on Optical Angular Momentum, edited by L Allen, S M Barnett and M J Padgett, is a recent addition to the series. It reproduces forty four papers originally published in different journals and in a few cases it provides direct access to works not easily accessible to a web navigator. The collection covers nearly a hundred years of progress in physics, starting from an historic 1909 paper by Poynting, and ending with a 2002 paper by Padgett, Barnett and coworkers on the measurement of the orbital angular momentum of a single photon. The field of optical angular momentum has expanded greatly, creating an interdisciplinary attraction for researchers operating in quantum optics, atomic physics, solid state physics, biophysics and quantum information theory. The development of laser optics, especially the control of single mode sources, has made possible the specific design of optical radiation modes with a high degree of control on the light angular momentum. The editors of this book are important figures in the field of angular momentum, having contributed to key progress in the area. L Allen published an historical paper in 1999, he and M J Padgett (together with M Babiker) produced few years ago a long review article which is today still the most complete basic introduction to the angular momentum of light, while S M Barnett has contributed several high quality papers to the progress of this area of physics. The editors' choice provides an excellent overview to all readers, with papers classified into eight different topics, covering the basic principles of the light and spin and orbital angular momentum, the laboratory tools for creating laser beams carrying orbital angular momentum, the optical forces and torques created by laser beams carrying angular momentum on

  13. Phase-preserved optical elevator

    Luo, Yuan; Zhang, Baile; Han, Tiancheng; Chen, Zhi; Duan, Yubo; Chu, Chia-Wei; Barbastathis, George; Qiu, Cheng Wei

    2013-01-01

    The unique superiority of transformation optics devices designed from coordinate transformation is their capability of recovering both ray trajectory and optical path length in light manipulation. However, very few experiments have been done so far to verify this dual-recovery property from viewpoints of both ray trajectory and optical path length simultaneously. The experimental difficulties arise from the fact that most previous optical transformation optics devices only work at the nano-sc...

  14. Radiation effects in optical components

    Friebele, E.J.

    1987-01-01

    This report discusses components of high performance optical devices may be exposed to high energy radiation environments during their lifetime. The effect of these adverse environments depends upon a large number of parameters associated with the radiation (nature, energy, dose, dose rate, etc.) or the system (temperature, optical performance requirements, optical wavelength, optical power, path length, etc.), as well as the intrinsic susceptibility of the optical component itself to degradation

  15. Research in the Optical Sciences

    2011-03-21

    Nonimaging Optics , (Elsevier Academic Press, Burlingham, 2005) Chapter 2. S. I. Voropayev and Y. D. Afanasyev. Vortex Structures in a Stratified Fluid...REPORT Research in the Optical Sciences 14. ABSTRACT 16. SECURITY CLASSIFICATION OF: This report decribes the research and results of the activity on...various projects over the period of the grant. The optics of study include atom optics and matter-wave quantum point contacts, theory of optical

  16. Optical Performance Monitoring and Signal Optimization in Optical Networks

    Petersen, Martin Nordal

    2006-01-01

    The thesis studies performance monitoring for the next generation optical networks. The focus is on all-optical networks with bit-rates of 10 Gb/s or above. Next generation all-optical networks offer large challenges as the optical transmitted distance increases and the occurrence of electrical-optical......-electrical regeneration points decreases. This thesis evaluates the impact of signal degrading effects that are becoming of increasing concern in all-optical high-speed networks due to all-optical switching and higher bit-rates. Especially group-velocity-dispersion (GVD) and a number of nonlinear effects will require...... enhanced attention to avoid signal degradations. The requirements for optical performance monitoring features are discussed, and the thesis evaluates the advantages and necessity of increasing the level of performance monitoring parameters in the physical layer. In particular, methods for optical...

  17. Optics Supply Planning System

    Gaylord, J.

    2009-01-01

    The purpose of this study is to specify the design for an initial optics supply planning system for NIF, and to present quality assurance and test plans for the construction of the system as specified. The National Ignition Facility (NIF) is a large laser facility that is just starting operations. Thousands of specialized optics are required to operate the laser, and must be exchanged over time based on the laser shot plan and predictions of damage. Careful planning and tracking of optic exchanges is necessary because of the tight inventory of spare optics, and the long lead times for optics procurements and production changes. Automated inventory forecasting and production planning tools are required to replace existing manual processes. The optics groups members who are expected to use the supply planning system are the stakeholders for this project, and are divided into three groups. Each of these groups participated in a requirements specification that was used to develop this design. (1) Optics Management--These are the top level stakeholdersk, and the final decision makers. This group is the interface to shot operations, is ultimately responsible for optics supply, and decides which exchanges will be made. (2) Work Center Managers--This group manages the on site optics processing work centers. They schedule the daily work center operations, and are responsible for developing long term processing, equipment, and staffing plans. (3) Component Engineers--This group manages the vendor contracts for the manufacture of new optics and the off site rework of existing optics. They are responsible for sourcing vendors, negotiating contracts, and managing vendor processes. The scope of this analysis is to describe the structure and design details of a system that will meet all requirements that were described by stakeholders and documented in the analysis model for this project. The design specifies the architecture, components, interfaces, and data stores of the system

  18. Childhood optic atrophy.

    Mudgil, A V; Repka, M X

    2000-02-01

    To determine the causes, and relative incidence of the common causes, of optic nerve atrophy in children under 10 years old and to compare prevalent aetiologies with those given in previous studies. The Wilmer Information System database was searched to identify all children, diagnosed between 1987 and 1997 with optic atrophy, who were under 10 years old at diagnosis. The medical records of these children were reviewed retrospectively A total of 272 children were identified, Complications from premature birth were the most frequent aetiology of optic atrophy (n = 44, 16%); 68% of these premature infants having a history of intraventricular haemorrhage. Tumour was the second most common aetiology (n = 40, 15%). The most frequent tumour was pilocytic astrocytoma (50%), followed by craniopharyngioma (17%). Hydrocephalus, unrelated to tumour, was the third most common aetiology (n = 26, 10%). In 114 cases (42%), the cause of optic atrophy became manifest in the perinatal period and/or could be attributed to adverse events in utero. A cause was not determined in 4% of cases. In the last decade, prematurity and hydrocephalus appear to have become important causes of optic atrophy in childhood. This trend is probably the result of improved survival of infants with extremely low birth weight.

  19. Solar Adaptive Optics

    Thomas R. Rimmele

    2011-06-01

    Full Text Available Adaptive optics (AO has become an indispensable tool at ground-based solar telescopes. AO enables the ground-based observer to overcome the adverse effects of atmospheric seeing and obtain diffraction limited observations. Over the last decade adaptive optics systems have been deployed at major ground-based solar telescopes and revitalized ground-based solar astronomy. The relatively small aperture of solar telescopes and the bright source make solar AO possible for visible wavelengths where the majority of solar observations are still performed. Solar AO systems enable diffraction limited observations of the Sun for a significant fraction of the available observing time at ground-based solar telescopes, which often have a larger aperture than equivalent space based observatories, such as HINODE. New ground breaking scientific results have been achieved with solar adaptive optics and this trend continues. New large aperture telescopes are currently being deployed or are under construction. With the aid of solar AO these telescopes will obtain observations of the highly structured and dynamic solar atmosphere with unprecedented resolution. This paper reviews solar adaptive optics techniques and summarizes the recent progress in the field of solar adaptive optics. An outlook to future solar AO developments, including a discussion of Multi-Conjugate AO (MCAO and Ground-Layer AO (GLAO will be given.

  20. Solar Adaptive Optics.

    Rimmele, Thomas R; Marino, Jose

    Adaptive optics (AO) has become an indispensable tool at ground-based solar telescopes. AO enables the ground-based observer to overcome the adverse effects of atmospheric seeing and obtain diffraction limited observations. Over the last decade adaptive optics systems have been deployed at major ground-based solar telescopes and revitalized ground-based solar astronomy. The relatively small aperture of solar telescopes and the bright source make solar AO possible for visible wavelengths where the majority of solar observations are still performed. Solar AO systems enable diffraction limited observations of the Sun for a significant fraction of the available observing time at ground-based solar telescopes, which often have a larger aperture than equivalent space based observatories, such as HINODE. New ground breaking scientific results have been achieved with solar adaptive optics and this trend continues. New large aperture telescopes are currently being deployed or are under construction. With the aid of solar AO these telescopes will obtain observations of the highly structured and dynamic solar atmosphere with unprecedented resolution. This paper reviews solar adaptive optics techniques and summarizes the recent progress in the field of solar adaptive optics. An outlook to future solar AO developments, including a discussion of Multi-Conjugate AO (MCAO) and Ground-Layer AO (GLAO) will be given. Supplementary material is available for this article at 10.12942/lrsp-2011-2.

  1. Solar tomography adaptive optics.

    Ren, Deqing; Zhu, Yongtian; Zhang, Xi; Dou, Jiangpei; Zhao, Gang

    2014-03-10

    Conventional solar adaptive optics uses one deformable mirror (DM) and one guide star for wave-front sensing, which seriously limits high-resolution imaging over a large field of view (FOV). Recent progress toward multiconjugate adaptive optics indicates that atmosphere turbulence induced wave-front distortion at different altitudes can be reconstructed by using multiple guide stars. To maximize the performance over a large FOV, we propose a solar tomography adaptive optics (TAO) system that uses tomographic wave-front information and uses one DM. We show that by fully taking advantage of the knowledge of three-dimensional wave-front distribution, a classical solar adaptive optics with one DM can provide an extra performance gain for high-resolution imaging over a large FOV in the near infrared. The TAO will allow existing one-deformable-mirror solar adaptive optics to deliver better performance over a large FOV for high-resolution magnetic field investigation, where solar activities occur in a two-dimensional field up to 60'', and where the near infrared is superior to the visible in terms of magnetic field sensitivity.

  2. Holographic optical security systems

    Fagan, William F.

    1990-06-01

    One of the most successful applications of Holography,in recent years,has been its use as an optical security technique.Indeed the general public's awareness of holograms has been greatly enhanced by the incorporation of holographic elements into the VISA and MASTERCHARGE credit cards.Optical techniques related to Holography,are also being used to protect the currencies of several countries against the counterfeiter. The mass production of high quality holographic images is by no means a trivial task as a considerable degree of expertise is required together with an optical laboratory and embossing machinery.This paper will present an overview of the principal holographic and related optical techniques used for security purposes.Worldwide, over thirty companies are involved in the production of security elements utilising holographic and related optical technologies.Counterfeiting of many products is a major criminal activity with severe consequences not only for the manufacturer but for the public in general as defective automobile parts,aircraft components,and pharmaceutical products, to cite only a few of the more prominent examples,have at one time or another been illegally copied.

  3. Wearable Optical Sensors

    Ballard, Zachary S.

    2017-07-12

    The market for wearable sensors is predicted to grow to $5.5 billion by 2025, impacting global health in unprecedented ways. Optics and photonics will play a key role in the future of these wearable technologies, enabling highly sensitive measurements of otherwise invisible information and parameters about our health and surrounding environment. Through the implementation of optical wearable technologies, such as heart rate, blood pressure, and glucose monitors, among others, individuals are becoming more empowered to generate a wealth of rich, multifaceted physiological and environmental data, making personalized medicine a reality. Furthermore, these technologies can also be implemented in hospitals, clinics, point-of-care offices, assisted living facilities or even in patients’ homes for real-time, remote patient monitoring, creating more expeditious as well as resource-efficient systems. Several key optical technologies make such sensors possible, including e.g., optical fiber textiles, colorimetric, plasmonic, and fluorometric sensors, as well as Organic Light Emitting Diode (OLED) and Organic Photo-Diode (OPD) technologies. These emerging technologies and platforms show great promise as basic sensing elements in future wearable devices and will be reviewed in this chapter along-side currently existing fully integrated wearable optical sensors.

  4. Illusion induced overlapped optics.

    Zang, XiaoFei; Shi, Cheng; Li, Zhou; Chen, Lin; Cai, Bin; Zhu, YiMing; Zhu, HaiBin

    2014-01-13

    The traditional transformation-based cloak seems like it can only hide objects by bending the incident electromagnetic waves around the hidden region. In this paper, we prove that invisible cloaks can be applied to realize the overlapped optics. No matter how many in-phase point sources are located in the hidden region, all of them can overlap each other (this can be considered as illusion effect), leading to the perfect optical interference effect. In addition, a singular parameter-independent cloak is also designed to obtain quasi-overlapped optics. Even more amazing of overlapped optics is that if N identical separated in-phase point sources covered with the illusion media, the total power outside the transformation region is N2I0 (not NI0) (I0 is the power of just one point source, and N is the number point sources), which seems violating the law of conservation of energy. A theoretical model based on interference effect is proposed to interpret the total power of these two kinds of overlapped optics effects. Our investigation may have wide applications in high power coherent laser beams, and multiple laser diodes, and so on.

  5. Quantum optical rotatory dispersion

    Tischler, Nora; Krenn, Mario; Fickler, Robert; Vidal, Xavier; Zeilinger, Anton; Molina-Terriza, Gabriel

    2016-01-01

    The phenomenon of molecular optical activity manifests itself as the rotation of the plane of linear polarization when light passes through chiral media. Measurements of optical activity and its wavelength dependence, that is, optical rotatory dispersion, can reveal information about intricate properties of molecules, such as the three-dimensional arrangement of atoms comprising a molecule. Given a limited probe power, quantum metrology offers the possibility of outperforming classical measurements. This has particular appeal when samples may be damaged by high power, which is a potential concern for chiroptical studies. We present the first experiment in which multiwavelength polarization-entangled photon pairs are used to measure the optical activity and optical rotatory dispersion exhibited by a solution of chiral molecules. Our work paves the way for quantum-enhanced measurements of chirality, with potential applications in chemistry, biology, materials science, and the pharmaceutical industry. The scheme that we use for probing wavelength dependence not only allows one to surpass the information extracted per photon in a classical measurement but also can be used for more general differential measurements. PMID:27713928

  6. Generalizing optical geometry

    Jonsson, Rickard; Westman, Hans

    2006-01-01

    We show that by employing the standard projected curvature as a measure of spatial curvature, we can make a certain generalization of optical geometry (Abramowicz M A and Lasota J-P 1997 Class. Quantum Grav. A 14 23-30). This generalization applies to any spacetime that admits a hypersurface orthogonal shearfree congruence of worldlines. This is a somewhat larger class of spacetimes than the conformally static spacetimes assumed in standard optical geometry. In the generalized optical geometry, which in the generic case is time dependent, photons move with unit speed along spatial geodesics and the sideways force experienced by a particle following a spatially straight line is independent of the velocity. Also gyroscopes moving along spatial geodesics do not precess (relative to the forward direction). Gyroscopes that follow a curved spatial trajectory precess according to a very simple law of three-rotation. We also present an inertial force formalism in coordinate representation for this generalization. Furthermore, we show that by employing a new sense of spatial curvature (Jonsson R 2006 Class. Quantum Grav. 23 1)) closely connected to Fermat's principle, we can make a more extensive generalization of optical geometry that applies to arbitrary spacetimes. In general this optical geometry will be time dependent, but still geodesic photons move with unit speed and follow lines that are spatially straight in the new sense. Also, the sideways experienced (comoving) force on a test particle following a line that is straight in the new sense will be independent of the velocity

  7. Pure chiral optical fibres.

    Poladian, L; Straton, M; Docherty, A; Argyros, A

    2011-01-17

    We investigate the properties of optical fibres made from chiral materials, in which a contrast in optical activity forms the waveguide, rather than a contrast in the refractive index; we refer to such structures as pure chiral fibres. We present a mathematical formulation for solving the modes of circularly symmetric examples of such fibres and examine the guidance and polarisation properties of pure chiral step-index, Bragg and photonic crystal fibre designs. Their behaviour is shown to differ for left- and right-hand circular polarisation, allowing circular polarisations to be isolated and/or guided by different mechanisms, as well as differing from equivalent non-chiral fibres. The strength of optical activity required in each case is quantified.

  8. Optics fabrication technical challenges

    Chabassier, G.; Ferriou, N.; Lavastre, E.; Maunier, C.; Neauport, J.; Taroux, D.; Balla, D.; Fornerod, J.C.

    2004-01-01

    Before the production of all the LMJ (MEGAJOULE laser) optics, the CEA had to proceed with the fabrication of about 300 large optics for the LIL (laser integration line) laser. Thanks to a fruitful collaboration with high-tech optics companies in Europe, this challenge has been successfully hit. In order to achieve the very tight requirements for cleanliness, laser damage threshold and all the other high demanding fabrication specifications, it has been necessary to develop and to set completely new fabrication process going and to build special outsize fabrication equipment. Through a couple of examples, this paper gives an overview of the work which has been done and shows some of the results which have been obtained: continuous laser glass melting, fabrication of the laser slabs, rapid-growth KDP (potassium dihydrogen phosphate) technology, large diffractive transmission gratings engraving and characterization. (authors)

  9. The Big Optical Array

    Mozurkewich, D.; Johnston, K.J.; Simon, R.S.

    1990-01-01

    This paper describes the design and the capabilities of the Naval Research Laboratory Big Optical Array (BOA), an interferometric optical array for high-resolution imaging of stars, stellar systems, and other celestial objects. There are four important differences between the BOA design and the design of Mark III Optical Interferometer on Mount Wilson (California). These include a long passive delay line which will be used in BOA to do most of the delay compensation, so that the fast delay line will have a very short travel; the beam combination in BOA will be done in triplets, to allow measurement of closure phase; the same light will be used for both star and fringe tracking; and the fringe tracker will use several wavelength channels

  10. Recycling microcavity optical biosensors.

    Hunt, Heather K; Armani, Andrea M

    2011-04-01

    Optical biosensors have tremendous potential for commercial applications in medical diagnostics, environmental monitoring, and food safety evaluation. In these applications, sensor reuse is desirable to reduce costs. To achieve this, harsh, wet chemistry treatments are required to remove surface chemistry from the sensor, typically resulting in reduced sensor performance and increased noise due to recognition moiety and optical transducer degradation. In the present work, we suggest an alternative, dry-chemistry method, based on O2 plasma treatment. This approach is compatible with typical fabrication of substrate-based optical transducers. This treatment completely removes the recognition moiety, allowing the transducer surface to be refreshed with new recognition elements and thus enabling the sensor to be recycled.

  11. Fiber Optic Calorimetry

    Rudy, C.; Bayliss, S.; Bracken, D.; Bush, J.; Davis, P.

    1997-01-01

    A twin-bridge calorimeter using optical fiber as the sensor element was constructed and tested. This system demonstrates the principle and capability of using optical fibers for heat-flow measurements of special nuclear material. This calorimeter uses piezoelectric-generated phase-carrier modulation with subsequent electronic signal processes to allow phase shifts as small as 1 microradian (microrad) to be measured. The sensing element consists of 21-m lengths of single-mode optical fiber wrapped around sample and reference chambers. The sensitivity of the calorimeter was determined to be 74 radians (rad) of phase shift per milliwatt of thermal power. One milliwatt of thermal power is equivalent to 400 mg of plutonium (6% 240 Pu). The system noise base was about 0.2 rad, equivalent to about 1 mg of plutonium

  12. Development Of Nonimaging Optics

    Winston, Roland

    1984-01-01

    This paper is concerned with the new field of nonimaging optics. Roughly this may be defined as the collection and redirection of light (or, more generally, electromagnetic radiation) by means of optical systems which do not make use of image formation concepts in their design. A non-trivial example is the compound parabolic concentrator (CPC) invented in 1965 for collecting Cerenkov radiation from large volumes of gas and concentrating it onto the relatively small area of a photomultiplier cathode. This task would, according to conventional optical practice, be performed by a lens or mirror image-forming system of high numerical aperture, but much greater concentration was achieved by a comparatively simple de-vice, the CPC. The key was to abandon the principle of imaging with high numerical aperture and instead to get the collected rays into as small an area as possible without attempting to produce an image.

  13. Optics and children

    Costa, Manuel F M; De Campos, J Ayres; Lira, Madalena; Franco, Sandra [Centro de Fisica da Universidade do Minho (Portugal); Vazquez-Dorrio, Jose B, E-mail: mfcosta@fisica.uminho.pt [Universidad de Vigo, EIM, Departamento de Fisica (Spain)

    2011-01-01

    Light and Optics are subjects that 'naturally' attracts the interest and sympathy of children even from very early ages. In this communication, we present a series of experiments and support material designed in this hands-on perspective, to be used to introduce the study of light and optics to kindergarten and early basic school students. Our hands-on investigative approach leads the students, aged 4 to 10 years, to observe the experiment and discover themselves, in a critical and active way, different aspects of light and optics. Preparing funny eye catching situations and experiments predispose the children to work, effectively, enjoying themselves while building up their self-confidence.

  14. The optical rotator

    Tandrup, T; Gundersen, Hans Jørgen Gottlieb; Jensen, Eva B. Vedel

    1997-01-01

    further discuss the methods derived from this principle and present two new local volume estimators. The optical rotator benefits from information obtained in all three dimensions in thick sections but avoids over-/ underprojection problems at the extremes of the cell. Using computer-assisted microscopes......The optical rotator is an unbiased, local stereological principle for estimation of cell volume and cell surface area in thick, transparent slabs, The underlying principle was first described in 1993 by Kieu Jensen (T. Microsc. 170, 45-51) who also derived an estimator of length, In this study we...... the extra measurements demand minimal extra effort and make this estimator even more efficient when it comes to estimation of individual cell size than many of the previous local estimators, We demonstrate the principle of the optical rotator in an example (the cells in the dorsal root ganglion of the rat...

  15. Optical packet switched networks

    Hansen, Peter Bukhave

    1999-01-01

    Optical packet switched networks are investigated with emphasis on the performance of the packet switch blocks. Initially, the network context of the optical packet switched network is described showing that a packet network will provide transparency, flexibility and bridge the granularity gap...... in interferometric wavelength converters is investigated showing that a 10 Gbit/s 19 4x4 swich blocks can be cascaded at a BER of 10-14. An analytical traffic model enables the calculation of the traffice performance of a WDM packet network. Hereby the importance of WDM and wavelegth conversion in the switch blocks...... is established as a flexible means to reduce the optical buffer, e.g., the number of fibre delay lines for a 16x16 switch block is reduced from 23 to 6 by going from 2 to 8 wavelength channels pr. inlet. Additionally, a component count analysis is carried out to illustrate the trade-offs in the switch block...

  16. Cognitive Dynamic Optical Networks

    de Miguel, Ignacio; Duran, Ramon J.; Jimenez, Tamara

    2013-01-01

    The use of cognition is a promising element for the control of heterogeneous optical networks. Not only are cognitive networks able to sense current network conditions and act according to them, but they also take into account the knowledge acquired through past experiences; that is, they include...... learning with the aim of improving performance. In this paper, we review the fundamentals of cognitive networks and focus on their application to the optical networking area. In particular, a number of cognitive network architectures proposed so far, as well as their associated supporting technologies......, are reviewed. Moreover, several applications, mainly developed in the framework of the EU FP7 Cognitive Heterogeneous Reconfigurable Optical Network (CHRON) project, are also described....

  17. Ultrafast nonlinear optics

    Leburn, Christopher; Reid, Derryck

    2013-01-01

    The field of ultrafast nonlinear optics is broad and multidisciplinary, and encompasses areas concerned with both the generation and measurement of ultrashort pulses of light, as well as those concerned with the applications of such pulses. Ultrashort pulses are extreme events – both in terms of their durations, and also the high peak powers which their short durations can facilitate. These extreme properties make them powerful experiment tools. On one hand, their ultrashort durations facilitate the probing and manipulation of matter on incredibly short timescales. On the other, their ultrashort durations can facilitate high peak powers which can drive highly nonlinear light-matter interaction processes. Ultrafast Nonlinear Optics covers a complete range of topics, both applied and fundamental in nature, within the area of ultrafast nonlinear optics. Chapters 1 to 4 are concerned with the generation and measurement of ultrashort pulses. Chapters 5 to 7 are concerned with fundamental applications of ultrasho...

  18. Geometrical optical illusionists.

    Wade, Nicholas J

    2014-01-01

    Geometrical optical illusions were given this title by Oppel in 1855. Variants on such small distortions of visual space were illustrated thereafter, many of which bear the names of those who first described them. Some original forms of the geometrical optical illusions are shown together with 'perceptual portraits' of those who described them. These include: Roget, Chevreul, Fick, Zöllner, Poggendorff, Hering, Kundt, Delboeuf Mach, Helmholtz, Hermann, von Bezold, Müller-Lyer, Lipps, Thiéry, Wundt, Münsterberg, Ebbinghaus, Titchener, Ponzo, Luckiesh, Sander, Ehrenstein, Gregory, Heard, White, Shepard, and. Lingelbach. The illusions are grouped under the headings of orientation, size, the combination of size and orientation, and contrast. Early theories of illusions, before geometrical optical illusions were so named, are mentioned briefly.

  19. Optical Fiber Fusion Splicing

    Yablon, Andrew D

    2005-01-01

    This book is an up-to-date treatment of optical fiber fusion splicing incorporating all the recent innovations in the field. It provides a toolbox of general strategies and specific techniques that the reader can apply when optimizing fusion splices between novel fibers. It specifically addresses considerations important for fusion splicing of contemporary specialty fibers including dispersion compensating fiber, erbium-doped gain fiber, polarization maintaining fiber, and microstructured fiber. Finally, it discusses the future of optical fiber fusion splicing including silica and non-silica based optical fibers as well as the trend toward increasing automation. Whilst serving as a self-contained reference work, abundant citations from the technical literature will enable readers to readily locate primary sources.

  20. Fiber optic calorimetry

    Rudy, C.R.; Bayliss, S.C.; Bracken, D.S.; Bush, I.J.; Davis, P.G.

    1998-01-01

    A twin-bridge calorimeter using optical fiber as the sensor element was constructed and tested. This system demonstrates the principle and capability of using optical fibers for heat-flow measurements of special nuclear material. This calorimeter uses piezoelectric-generated phase-carrier modulation with subsequent electronic signal processing to allow phase shifts as small as 1 microrad to be measured. The sensing element consists of 21-m lengths of single-mode optical fiber wrapped around sample and reference chambers. The sensitivity of the calorimeter was determined to be 74 rad of phase shift per mW of thermal power. One milliwatt of thermal power is equivalent to 400 mg of plutonium (6% 240 Pu). The system noise base was about 0.2 rad, equivalent to about 1 mg of plutonium

  1. Optical Tomography in Combustion

    Evseev, Vadim

    spectral measurements at several line-of-sights with a view to applications for tomographic measurements on full-scale industrial combustion systems. The system was successfully applied on industrial scale for simultaneous fast exhaust gas temperature measurements in the three optical ports of the exhaust......D project, it was also important to investigate the spectral properties of major combustion species such as carbon dioxide and carbon monoxide in the infrared range at high temperatures to provide the theoretical background for the development of the optical tomography methods. The new software....... JQSRT 113 (2012) 2222, 10.1016/j.jqsrt.2012.07.015] included in the PhD thesis as an attachment. The knowledge and experience gained in the PhD project is the first important step towards introducing the advanced optical tomography methods of combustion diagnostics developed in the project to future...

  2. Optical quantum memory

    Lvovsky, Alexander I.; Sanders, Barry C.; Tittel, Wolfgang

    2009-12-01

    Quantum memory is essential for the development of many devices in quantum information processing, including a synchronization tool that matches various processes within a quantum computer, an identity quantum gate that leaves any state unchanged, and a mechanism to convert heralded photons to on-demand photons. In addition to quantum computing, quantum memory will be instrumental for implementing long-distance quantum communication using quantum repeaters. The importance of this basic quantum gate is exemplified by the multitude of optical quantum memory mechanisms being studied, such as optical delay lines, cavities and electromagnetically induced transparency, as well as schemes that rely on photon echoes and the off-resonant Faraday interaction. Here, we report on state-of-the-art developments in the field of optical quantum memory, establish criteria for successful quantum memory and detail current performance levels.

  3. Optical Computers and Space Technology

    Abdeldayem, Hossin A.; Frazier, Donald O.; Penn, Benjamin; Paley, Mark S.; Witherow, William K.; Banks, Curtis; Hicks, Rosilen; Shields, Angela

    1995-01-01

    The rapidly increasing demand for greater speed and efficiency on the information superhighway requires significant improvements over conventional electronic logic circuits. Optical interconnections and optical integrated circuits are strong candidates to provide the way out of the extreme limitations imposed on the growth of speed and complexity of nowadays computations by the conventional electronic logic circuits. The new optical technology has increased the demand for high quality optical materials. NASA's recent involvement in processing optical materials in space has demonstrated that a new and unique class of high quality optical materials are processible in a microgravity environment. Microgravity processing can induce improved orders in these materials and could have a significant impact on the development of optical computers. We will discuss NASA's role in processing these materials and report on some of the associated nonlinear optical properties which are quite useful for optical computers technology.

  4. Brownian modulated optical nanoprobes

    Behrend, C.J.; Anker, J.N.; Kopelman, R.

    2004-01-01

    Brownian modulated optical nanoprobes (Brownian MOONs) are fluorescent micro- and nanoparticles that resemble moons: one hemisphere emits a bright fluorescent signal, while an opaque metal darkens the other hemisphere. Brownian motion causes the particles to tumble and blink erratically as they rotate literally through the phases of the moon. The fluctuating probe signals are separated from optical and electronic backgrounds using principal components analysis or images analysis. Brownian MOONs enable microrheological measurements on size scales and timescales that are difficult to study with other methods. Local chemical concentrations can be measured simultaneously, using spectral characteristics of indicator dyes embedded within the MOONs

  5. Fluoride glass fiber optics

    Aggarwal, Ishwar D

    1991-01-01

    Fluoride Glass Fiber Optics reviews the fundamental aspects of fluoride glasses. This book is divided into nine chapters. Chapter 1 discusses the wide range of fluoride glasses with an emphasis on fluorozirconate-based compositions. The structure of simple fluoride systems, such as BaF2 binary glass is elaborated in Chapter 2. The third chapter covers the intrinsic transparency of fluoride glasses from the UV to the IR, with particular emphasis on the multiphonon edge and electronic edge. The next three chapters are devoted to ultra-low loss optical fibers, reviewing methods for purifying and

  6. Gigashot Optical Laser Demonstrator

    Deri, R. J. [Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)

    2015-10-13

    The Gigashot Optical Laser Demonstrator (GOLD) project has demonstrated a novel optical amplifier for high energy pulsed lasers operating at high repetition rates. The amplifier stores enough pump energy to support >10 J of laser output, and employs conduction cooling for thermal management to avoid the need for expensive and bulky high-pressure helium subsystems. A prototype amplifier was fabricated, pumped with diode light at 885 nm, and characterized. Experimental results show that the amplifier provides sufficient small-signal gain and sufficiently low wavefront and birefringence impairments to prove useful in laser systems, at repetition rates up to 60 Hz.

  7. Optical Coherence Tomography

    Mogensen, Mette; Themstrup, Lotte; Banzhaf, Christina

    2014-01-01

    Optical coherence tomography (OCT) has developed rapidly since its first realisation in medicine and is currently an emerging technology in the diagnosis of skin disease. OCT is an interferometric technique that detects reflected and backscattered light from tissue and is often described as the o......Optical coherence tomography (OCT) has developed rapidly since its first realisation in medicine and is currently an emerging technology in the diagnosis of skin disease. OCT is an interferometric technique that detects reflected and backscattered light from tissue and is often described...

  8. Free space optical communication

    Kaushal, Hemani; Kar, Subrat

    2017-01-01

    This book provides an in-depth understanding of free space optical (FSO) communication with a particular emphasis on optical beam propagation through atmospheric turbulence. The book is structured in such a way that it provides a basic framework for the beginners and also gives a concise description from a designer’s perspective. The book provides an exposure to FSO technology, fundamental limitations, design methodologies, system trade-offs, acquisition, tracking and pointing (ATP) techniques and link-feasibility analysis. The contents of this book will be of interest to professionals and researchers alike. The book may also be used as a textbook for engineering coursework and professional training.

  9. Optically switchable photonic metasurfaces

    Waters, R. F.; MacDonald, K. F. [Centre for Photonic Metamaterials and Optoelectronics Research Centre, University of Southampton, Southampton SO17 1BJ (United Kingdom); Hobson, P. A. [QinetiQ Ltd., Cody Technology Park, Farnborough, Hampshire GU14 0LX (United Kingdom); Zheludev, N. I. [Centre for Photonic Metamaterials and Optoelectronics Research Centre, University of Southampton, Southampton SO17 1BJ (United Kingdom); Centre for Disruptive Photonic Technologies and The Photonics Institute, Nanyang Technological University, Singapore 637371 (Singapore)

    2015-08-24

    We experimentally demonstrate an optically switchable gallium-based metasurface, in which a reversible light-induced transition between solid and liquid phases occurring in a confined nanoscale surface layer of the metal drives significant changes in reflectivity and absorption. The metasurface architecture resonantly enhances the metal's “active plasmonic” phase-change nonlinearity by an order of magnitude, offering high contrast all-optical switching in the near-infrared range at low, μW μm{sup −2}, excitation intensities.

  10. Handbook of biomedical optics

    Boas, David A

    2011-01-01

    Biomedical optics holds tremendous promise to deliver effective, safe, non- or minimally invasive diagnostics and targeted, customizable therapeutics. Handbook of Biomedical Optics provides an in-depth treatment of the field, including coverage of applications for biomedical research, diagnosis, and therapy. It introduces the theory and fundamentals of each subject, ensuring accessibility to a wide multidisciplinary readership. It also offers a view of the state of the art and discusses advantages and disadvantages of various techniques.Organized into six sections, this handbook: Contains intr

  11. Stochastic singular optics

    Roux, FS

    2013-09-01

    Full Text Available Roux Presented at the International Conference on Correlation Optics 2013 Chernivtsi, Ukraine 18-20 September 2013 CSIR National Laser Centre, Pretoria, South Africa – p. 1/24 Contents ⊲ Defining Stochastic Singular Optics (SSO) ⊲ Tools of Stochastic... of vortices: topological charge ±1 (higher order are unstable). Positive and negative vortex densities np(x, y, z) and nn(x, y, z) ⊲ Vortex density: V = np + nn ⊲ Topological charge density: T = np − nn – p. 4/24 Subfields of SSO ⊲ Homogeneous, normally...

  12. Nonimaging optical illumination system

    Winston, R.; Ries, H.

    2000-02-01

    A nonimaging illumination optical device for producing a selected far field illuminance over an angular range. The optical device includes a light source, a light reflecting surface, and a family of light edge rays defined along a reference line with the reflecting surface defined in terms of the reference line 104 as a parametric function R(t) where t is a scalar parameter position and R(t) = k(t) + Du(t) where k(t) is a parameterization of the reference line 104, and D is a distance from a point on the reference line 104 to the reflection surface 108 along the desired edge ray through the point.

  13. Fibre optic microarrays.

    Walt, David R

    2010-01-01

    This tutorial review describes how fibre optic microarrays can be used to create a variety of sensing and measurement systems. This review covers the basics of optical fibres and arrays, the different microarray architectures, and describes a multitude of applications. Such arrays enable multiplexed sensing for a variety of analytes including nucleic acids, vapours, and biomolecules. Polymer-coated fibre arrays can be used for measuring microscopic chemical phenomena, such as corrosion and localized release of biochemicals from cells. In addition, these microarrays can serve as a substrate for fundamental studies of single molecules and single cells. The review covers topics of interest to chemists, biologists, materials scientists, and engineers.

  14. Optical Aberrations and Wavefront

    Nihat Polat

    2014-08-01

    Full Text Available The deviation of light to create normal retinal image in the optical system is called aberration. Aberrations are divided two subgroup: low-order aberrations (defocus: spherical and cylindrical refractive errors and high-order aberrations (coma, spherical, trefoil, tetrafoil, quadrifoil, pentafoil, secondary astigmatism. Aberrations increase with aging. Spherical aberrations are compensated by positive corneal and negative lenticular spherical aberrations in youth. Total aberrations are elevated by positive corneal and positive lenticular spherical aberrations in elderly. In this study, we aimed to analyze the basic terms regarding optic aberrations which have gained significance recently. (Turk J Ophthalmol 2014; 44: 306-11

  15. Solid state optical microscope

    Young, Ian T.

    1983-01-01

    A solid state optical microscope wherein wide-field and high-resolution images of an object are produced at a rapid rate by utilizing conventional optics with a charge-coupled photodiode array. A galvanometer scanning mirror, for scanning in one of two orthogonal directions is provided, while the charge-coupled photodiode array scans in the other orthogonal direction. Illumination light from the object is incident upon the photodiodes, creating packets of electrons (signals) which are representative of the illuminated object. The signals are then processed, stored in a memory, and finally displayed as a video signal.

  16. Grazing Incidence Neutron Optics

    Gubarev, Mikhail V. (Inventor); Ramsey, Brian D. (Inventor); Engelhaupt, Darell E. (Inventor)

    2013-01-01

    Neutron optics based on the two-reflection geometries are capable of controlling beams of long wavelength neutrons with low angular divergence. The preferred mirror fabrication technique is a replication process with electroform nickel replication process being preferable. In the preliminary demonstration test an electroform nickel optics gave the neutron current density gain at the focal spot of the mirror at least 8 for neutron wavelengths in the range from 6 to 20.ANG.. The replication techniques can be also be used to fabricate neutron beam controlling guides.

  17. Optics in neural computation

    Levene, Michael John

    In all attempts to emulate the considerable powers of the brain, one is struck by both its immense size, parallelism, and complexity. While the fields of neural networks, artificial intelligence, and neuromorphic engineering have all attempted oversimplifications on the considerable complexity, all three can benefit from the inherent scalability and parallelism of optics. This thesis looks at specific aspects of three modes in which optics, and particularly volume holography, can play a part in neural computation. First, holography serves as the basis of highly-parallel correlators, which are the foundation of optical neural networks. The huge input capability of optical neural networks make them most useful for image processing and image recognition and tracking. These tasks benefit from the shift invariance of optical correlators. In this thesis, I analyze the capacity of correlators, and then present several techniques for controlling the amount of shift invariance. Of particular interest is the Fresnel correlator, in which the hologram is displaced from the Fourier plane. In this case, the amount of shift invariance is limited not just by the thickness of the hologram, but by the distance of the hologram from the Fourier plane. Second, volume holography can provide the huge storage capacity and high speed, parallel read-out necessary to support large artificial intelligence systems. However, previous methods for storing data in volume holograms have relied on awkward beam-steering or on as-yet non- existent cheap, wide-bandwidth, tunable laser sources. This thesis presents a new technique, shift multiplexing, which is capable of very high densities, but which has the advantage of a very simple implementation. In shift multiplexing, the reference wave consists of a focused spot a few millimeters in front of the hologram. Multiplexing is achieved by simply translating the hologram a few tens of microns or less. This thesis describes the theory for how shift

  18. Diffractive optics for industrial and commercial applications

    Turunen, J. [Joensuu Univ. (Finland); Wyrowski, F. [eds.] [Jena Univ. (Germany)

    1997-12-31

    The following topics were dealt with: diffractive optics, diffraction gratings, optical system design with diffractive optics, continuous-relief diffractive lenses and microlens arrays, diffractive bifocal intraocular lenses, diffractive laser resonators, diffractive optics for semiconductor lasers, diffractive elements for optical image processing, photorefractive crystals in optical measurement systems, subwavelenth-structured elements, security applications, diffractive optics for solar cells, holographic microlithography. 999 refs.

  19. Improved Optical Fiber Chemical Sensors

    Egalon, Claudio O.; Rogowski, Robert S.

    1994-01-01

    Calculations, based on exact theory of optical fiber, have shown how to increase optical efficiency sensitivity of active-core, step-index-profile optical-fiber fluorosensor. Calculations result of efforts to improve efficiency of optical-fiber chemical sensor of previous concept described in "Making Optical-Fiber Chemical Sensors More Sensitive" (LAR-14525). Optical fiber chemical detector of enhanced sensitivity made in several configurations. Portion of fluorescence or chemiluminescence generated in core, and launched directly into bound electromagnetic modes that propagate along core to photodetector.

  20. Modeling of semiconductor optical amplifiers

    Mørk, Jesper; Bischoff, Svend; Berg, Tommy Winther

    We discuss the modelling of semiconductor optical amplifiers with emphasis on their high-speed properties. Applications in linear amplification as well as ultrafast optical signal processing are reviewed. Finally, the possible role of quantum-dot based optical amplifiers is discussed.......We discuss the modelling of semiconductor optical amplifiers with emphasis on their high-speed properties. Applications in linear amplification as well as ultrafast optical signal processing are reviewed. Finally, the possible role of quantum-dot based optical amplifiers is discussed....

  1. Field guide to nonlinear optics

    Powers, Peter E

    2013-01-01

    Optomechanics is a field of mechanics that addresses the specific design challenges associated with optical systems. This [i]Field Guide [/i]describes how to mount optical components, as well as how to analyze a given design. It is intended for practicing optical and mechanical engineers whose work requires knowledge in both optics and mechanics. This Field Guide is designed for those looking for a condensed and concise source of key concepts, equations, and techniques for nonlinear optics. Topics covered include technologically important effects, recent developments in nonlinear optics

  2. Optics in the United kingdom.

    Ditchburn, R W

    1969-10-01

    Optics is interpreted to include x-ray optics, electronic optics, and short wave radiooptics as well as the more conventional visible, uv, and ir optics. Recent work in Britain on x-ray optics (applied to molecular biology), on scanning electron microscopy, and in radioastronomy (discovery of pulsars) is mentioned. In the optics of the visible and ir there is an increasing interest in over-all systems design. .The formation of large industrial units capable of carrying through major design program, requiring advanced mechanical and electronic design associated with new lens systems, is welcomed.

  3. Optical computation based on nonlinear total reflectional optical ...

    Optical computing; beam splitter; optical switch; polarized beams. ... main research direction called quantum information and quantum computation is .... above has several advantages: Firstly, it is easy to be integrated with appropriate.

  4. Magnetic propertiesof Lu.sub.2./sub.Fe.sub.16./sub.X (X = Fe, Ni, Cr, Si) intermetallics under high hydrostatic pressure

    Kamarád, Jiří; Andreev, Alexander V.; Machátová, Zuzana; Arnold, Zdeněk

    408-412, - (2006), s. 151-154 ISSN 0925-8388 R&D Projects: GA ČR(CZ) GA202/02/0739; GA MŠk(CZ) ME 495 Institutional research plan: CEZ:AV0Z10100521 Keywords : intermetallic compounds * Lu 2 Fe 17 * magnetic properties * high pressure Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.250, year: 2006

  5. Optical Character Recognition.

    Converso, L.; Hocek, S.

    1990-01-01

    This paper describes computer-based optical character recognition (OCR) systems, focusing on their components (the computer, the scanner, the OCR, and the output device); how the systems work; and features to consider in selecting a system. A list of 26 questions to ask to evaluate systems for potential purchase is included. (JDD)

  6. Integrated Optical lightguide device

    Heideman, Rene; Lambeck, Paul; Veldhuis, G.J.

    2005-01-01

    In an integrated optical lightguide device including a light-transmitting core layer, an inclusion or buffer layer, and an active or cladding layer. The cladding layer is divided into segments. Groups of different segments exhibit different refractive indices, light intensity profiles or different

  7. Integrated Optical lightguide device

    Heideman, Rene; Lambeck, Paul; Veldhuis, G.J.

    2000-01-01

    In an integrated optical lightguide device including a light-transmitting core layer, an inclusion or buffer layer, and an active or cladding layer. The cladding layer is divided into segments. Groups of different segments exhibit different refractive indices, light intensity profiles or different

  8. Optical Fiber Protection

    1999-01-01

    F&S Inc. developed and commercialized fiber optic and microelectromechanical systems- (MEMS) based instrumentation for harsh environments encountered in the aerospace industry. The NASA SBIR programs have provided F&S the funds and the technology to develop ruggedized coatings and coating techniques that are applied during the optical fiber draw process. The F&S optical fiber fabrication facility and developed coating methods enable F&S to manufacture specialty optical fiber with custom designed refractive index profiles and protective or active coatings. F&S has demonstrated sputtered coatings using metals and ceramics and combinations of each, and has also developed techniques to apply thin coatings of specialized polyimides formulated at NASA Langley Research Center. With these capabilities, F&S has produced cost-effective, reliable instrumentation and sensors capable of withstanding temperatures up to 800? C and continues building commercial sales with corporate partners and private funding. More recently, F&S has adapted the same sensing platforms to provide the rapid detection and identification of chemical and biological agents

  9. Quantum optics, what next?

    Cirac, J. Ignacio; Kimble, H. Jeff

    2017-01-01

    Quantum optics is a well-established field that spans from fundamental physics to quantum information science. In the coming decade, areas including computation, communication and metrology are all likely to experience scientific and technological advances supported by this far-reaching research field.

  10. Optic nerve oxygen tension

    Kiilgaard, Jens Folke; Pedersen, D B; Eysteinsson, T

    2004-01-01

    The authors have previously reported that carbonic anhydrase inhibitors such as acetazolamide and dorzolamide raise optic nerve oxygen tension (ONPO(2)) in pigs. The purpose of the present study was to investigate whether timolol, which belongs to another group of glaucoma drugs called beta...

  11. Newton's Contributions to Optics

    Home; Journals; Resonance – Journal of Science Education; Volume 11; Issue 12. Newton's Contributions to Optics. Arvind Kumar. General Article Volume 11 Issue 12 December 2006 pp 10-20. Fulltext. Click here to view fulltext PDF. Permanent link: https://www.ias.ac.in/article/fulltext/reso/011/12/0010-0020. Keywords.

  12. Wigner distribution in optics

    Bastiaans, M.J.; Testorf, M.; Hennelly, B.; Ojeda-Castañeda, J.

    2009-01-01

    In 1932 Wigner introduced a distribution function in mechanics that permitted a description of mechanical phenomena in a phase space. Such a Wigner distribution was introduced in optics by Dolin and Walther in the sixties, to relate partial coherence to radiometry. A few years later, the Wigner

  13. FIBER OPTIC LIGHTING SYSTEMS

    Munir BATUR

    2013-01-01

    Full Text Available Recently there have been many important and valuable developments in the communication industry. The huge increase in the sound, data and visual communications has caused a parallel increase in the demand for systems with wider capacity, higher speed and higher quality. Communication systems that use light to transfer data are immensely increased. There have recently many systems in which glass or plastic fiber cables were developed for light wave to be transmitted from a source to a target place. Fiber optic systems, are nowadays widely used in energy transmission control systems, medicine, industry and lighting. The basics of the system is, movement of light from one point to another point in fiber cable with reflections. Fiber optic lighting systems are quite secure than other lighting systems and have flexibility for realizing many different designs. This situation makes fiber optics an alternative for other lighting systems. Fiber optic lighting systems usage is increasing day-by-day in our life. In this article, these systems are discussed in detail.

  14. Electrospun amplified fiber optics.

    Morello, Giovanni; Camposeo, Andrea; Moffa, Maria; Pisignano, Dario

    2015-03-11

    All-optical signal processing is the focus of much research aiming to obtain effective alternatives to existing data transmission platforms. Amplification of light in fiber optics, such as in Erbium-doped fiber amplifiers, is especially important for efficient signal transmission. However, the complex fabrication methods involving high-temperature processes performed in a highly pure environment slow the fabrication process and make amplified components expensive with respect to an ideal, high-throughput, room temperature production. Here, we report on near-infrared polymer fiber amplifiers working over a band of ∼20 nm. The fibers are cheap, spun with a process entirely carried out at room temperature, and shown to have amplified spontaneous emission with good gain coefficients and low levels of optical losses (a few cm(-1)). The amplification process is favored by high fiber quality and low self-absorption. The found performance metrics appear to be suitable for short-distance operations, and the large variety of commercially available doping dyes might allow for effective multiwavelength operations by electrospun amplified fiber optics.

  15. Optical properties of nanoparticles

    Bendix, Pól Martin

    2015-01-01

    At the NBI I am involved in projects relating to optical properties of metallic nanoparticles in particular with respect to plasmonic heating with direct applications to photothermal cancer therapy. For this purpose we have developed heating assays that can be used to measure the heating of any...... nanoscopic heat source like an irradiated nanoparticle...

  16. Generalized optical theorems

    Cahill, K.

    1975-11-01

    Local field theory is used to derive formulas that express certain boundary values of the N-point function as sums of products of scattering amplitudes. These formulas constitute a generalization of the optical theorem and facilitate the analysis of multiparticle scattering functions [fr

  17. Diffractive nonimaging optics

    Jong, de T.M.

    2012-01-01

    Economic use of energy often depends on efficient management of light. Power generation from solar energy, for example, can involve optical systems that concentrate incident sunlight onto a small area and thereby reduce the required surface area of photovoltaic elements. Similarly, efficient

  18. Vitality of optical vortices

    Roux, FS

    2014-02-01

    Full Text Available Optical vortices are always created or annihilated in pairs with opposite topological charges. However, the presence of such a vortex dipole does not directly indicate whether they are associated with a creation or an annihilation event. Here we...

  19. Optics in flatland

    Lohmann, Adolf W.; Pe'er, Avi; Wang, Dayong; Piestun, Rafael; Friesem, Asher A.

    2003-11-01

    "Flatland" is the title of a science fiction story, written in 1880 by E.A. Abbott. The creatures of Flatland, living in their two-dimensional universe, are inspected and manipulated by 3D-people like we are. Here we show how the optics part of this science fiction story can be implemented -- for fun and profit.

  20. Optics of moving media

    Piwnicki, P.; Leonhardt, U.

    2001-01-01

    Light experiences a moving medium as an effective gravitational field. In the limit of low medium velocities the medium flow plays the role of a magnetic vector potential. We review the background of our theory [U. Leonhardt and P. Piwnicki, Phys. Rev. A 60, 4301 (1999); Phys. Rev. Lett. 84, 822 (2000)], including our proposal of making optical black holes.

  1. Optic nerve hypoplasia

    Savleen Kaur

    2013-01-01

    Full Text Available Optic nerve hypoplasia (ONH is a congenital anomaly of the optic disc that might result in moderate to severe vision loss in children. With a vast number of cases now being reported, the rarity of ONH is obviously now refuted. The major aspects of ophthalmic evaluation of an infant with possible ONH are visual assessment, fundus examination, and visual electrophysiology. Characteristically, the disc is small, there is a peripapillary double-ring sign, vascular tortuosity, and thinning of the nerve fiber layer. A patient with ONH should be assessed for presence of neurologic, radiologic, and endocrine associations. There may be maternal associations like premature births, fetal alcohol syndrome, maternal diabetes. Systemic associations in the child include endocrine abnormalities, developmental delay, cerebral palsy, and seizures. Besides the hypoplastic optic nerve and chiasm, neuroimaging shows abnormalities in ventricles or white- or gray-matter development, septo-optic dysplasia, hydrocephalus, and corpus callosum abnormalities. There is a greater incidence of clinical neurologic abnormalities in patients with bilateral ONH (65% than patients with unilateral ONH. We present a review on the available literature on the same to urge caution in our clinical practice when dealing with patients with ONH. Fundus photography, ocular coherence tomography, visual field testing, color vision evaluation, neuroimaging, endocrinology consultation with or without genetic testing are helpful in the diagnosis and management of ONH. (Method of search: MEDLINE, PUBMED.

  2. Multifunctional optical sensor

    2010-01-01

    The invention relates to a multifunctional optical sensor, having at least 2 areas which independently react to different input parameters, the sensor comprising a substrate and a polymeric layer comprising polymerized liquid crystal monomers having an ordered morphology, wherein the color, the

  3. Devic's Disease (Neuromyelitis optical)

    Pinzon, Alfredo; Echeverry, Tatiana; Rodriguez, Aida Bibiana

    2010-01-01

    We present a case report about a young woman initially treated as having multiple sclerosis, who relapsed with serious visual impairment. Devic's disease is a demyelinating disorder that presents as transverse myelitis associated with optic neuritis, typically bilateral. Multiple sclerosis is in fact the main differential diagnosis

  4. Spatiotemporal optical solitons

    Malomed, Boris A; Mihalache, Dumitru; Wise, Frank; Torner, Lluis

    2005-01-01

    In the course of the past several years, a new level of understanding has been achieved about conditions for the existence, stability, and generation of spatiotemporal optical solitons, which are nondiffracting and nondispersing wavepackets propagating in nonlinear optical media. Experimentally, effectively two-dimensional (2D) spatiotemporal solitons that overcome diffraction in one transverse spatial dimension have been created in quadratic nonlinear media. With regard to the theory, fundamentally new features of light pulses that self-trap in one or two transverse spatial dimensions and do not spread out in time, when propagating in various optical media, were thoroughly investigated in models with various nonlinearities. Stable vorticity-carrying spatiotemporal solitons have been predicted too, in media with competing nonlinearities (quadratic-cubic or cubic-quintic). This article offers an up-to-date survey of experimental and theoretical results in this field. Both achievements and outstanding difficulties are reviewed, and open problems are highlighted. Also briefly described are recent predictions for stable 2D and 3D solitons in Bose-Einstein condensates supported by full or low-dimensional optical lattices. (review article)

  5. Optical Computing - Research Trends

    Home; Journals; Resonance – Journal of Science Education; Volume 8; Issue 7. Optical Computing - Research Trends. Debabrata Goswami. General Article Volume 8 Issue 7 July 2003 pp 8-21. Fulltext. Click here to view fulltext PDF. Permanent link: https://www.ias.ac.in/article/fulltext/reso/008/07/0008-0021. Keywords.

  6. Ultrafast all-optical signal processing using semiconductor optical amplifiers

    Li, Z.

    2007-01-01

    As the bit rate of one wavelength channel and the number of channels keep increasing in the telecommunication networks thanks to the advancement of optical transmission technologies, switching is experiencing the transition from the electrical domain to the optical domain. All-optical signal

  7. Optical interference coatings for optics and photonics [Invited].

    Lee, Cheng-Chung

    2013-01-01

    Optical interference coatings play as an important role in the progress in optics and photonics. In this article we give a minireview of the evolution of optical interference coatings from the theory, the design, to the manufacture. Some interesting but challenging topics for the future are also discussed.

  8. Ray-optics analysis of inhomogeneous optically anisotropic media

    Sluijter, M.

    2010-01-01

    When the optical behavior of light in a medium depends on the direction in which light is traveling, the medium is called optically anisotropic. Light is an electromagnetic wave and in this thesis, we discuss the electromagnetic theory on optical anisotropy. We do this with the assumption that the

  9. Optical pulse generation using fiber lasers and integrated optics

    Wilcox, R.B.; Browning, D.F.; Burkhart, S.C.; VanWonterghem, B.W.

    1995-01-01

    We have demonstrated an optical pulse forming system using fiber and integrated optics, and have designed a multiple-output system for a proposed fusion laser facility. Our approach is an advancement over previous designs for fusion lasers, and an unusual application of fiber lasers and integrated optics

  10. Optical Communications Channel Combiner

    Quirk, Kevin J.; Quirk, Kevin J.; Nguyen, Danh H.; Nguyen, Huy

    2012-01-01

    NASA has identified deep-space optical communications links as an integral part of a unified space communication network in order to provide data rates in excess of 100 Mb/s. The distances and limited power inherent in a deep-space optical downlink necessitate the use of photon-counting detectors and a power-efficient modulation such as pulse position modulation (PPM). For the output of each photodetector, whether from a separate telescope or a portion of the detection area, a communication receiver estimates a log-likelihood ratio for each PPM slot. To realize the full effective aperture of these receivers, their outputs must be combined prior to information decoding. A channel combiner was developed to synchronize the log-likelihood ratio (LLR) sequences of multiple receivers, and then combines these into a single LLR sequence for information decoding. The channel combiner synchronizes the LLR sequences of up to three receivers and then combines these into a single LLR sequence for output. The channel combiner has three channel inputs, each of which takes as input a sequence of four-bit LLRs for each PPM slot in a codeword via a XAUI 10 Gb/s quad optical fiber interface. The cross-correlation between the channels LLR time series are calculated and used to synchronize the sequences prior to combining. The output of the channel combiner is a sequence of four-bit LLRs for each PPM slot in a codeword via a XAUI 10 Gb/s quad optical fiber interface. The unit is controlled through a 1 Gb/s Ethernet UDP/IP interface. A deep-space optical communication link has not yet been demonstrated. This ground-station channel combiner was developed to demonstrate this capability and is unique in its ability to process such a signal.

  11. Herpes Zoster Optic Neuropathy.

    Kaufman, Aaron R; Myers, Eileen M; Moster, Mark L; Stanley, Jordan; Kline, Lanning B; Golnik, Karl C

    2018-06-01

    Herpes zoster optic neuropathy (HZON) is a rare manifestation of herpes zoster ophthalmicus (HZO). The aim of our study was to better characterize the clinical features, therapeutic choices, and visual outcomes in HZON. A retrospective chart review was performed at multiple academic eye centers with the inclusion criteria of all eyes presenting with optic neuropathy within 1 month of cutaneous zoster of the ipsilateral trigeminal dermatome. Data were collected regarding presenting features, treatment regimen, and visual acuity outcomes. Six patients meeting the HZON inclusion criteria were identified. Mean follow-up was 2.75 months (range 0.5-4 months). Herpes zoster optic neuropathy developed at a mean of 14.1 days after initial rash (range 6-30 days). Optic neuropathy was anterior in 2 eyes and retrobulbar in 4 eyes. Other manifestations of HZO included keratoconjunctivitis (3 eyes) and iritis (4 eyes). All patients were treated with systemic antiviral therapy in addition to topical and/or systemic corticosteroids. At the last follow-up, visual acuity in 3 eyes had improved relative to presentation, 2 eyes had worsened, and 1 eye remained the same. The 2 eyes that did not receive systemic corticosteroids had the best observed final visual acuity. Herpes zoster optic neuropathy is an unusual but distinctive complication of HZO. Visual recovery after HZON is variable. Identification of an optimal treatment regiment for HZON could not be identified from our patient cohort. Systemic antiviral agents are a component of HZON treatment regimens. Efficacy of systemic corticosteroids for HZON remains unclear and should be considered on a case-by-case basis.

  12. Optical fiber stripper positioning apparatus

    Fyfe, Richard W.; Sanchez, Jr., Amadeo

    1990-01-01

    An optical fiber positioning apparatus for an optical fiber stripping device is disclosed which is capable of providing precise axial alignment between an optical fiber to be stripped of its outer jacket and the cutting blades of a stripping device. The apparatus includes a first bore having a width approximately equal to the diameter of an unstripped optical fiber and a counter bore axially aligned with the first bore and dimensioned to precisely receive a portion of the stripping device in axial alignment with notched cutting blades within the stripping device to thereby axially align the notched cutting blades of the stripping device with the axis of the optical fiber to permit the notched cutting blades to sever the jacket on the optical fiber without damaging the cladding on the optical fiber. In a preferred embodiment, the apparatus further includes a fiber stop which permits determination of the length of jacket to be removed from the optical fiber.

  13. Binary optics: Trends and limitations

    Farn, Michael W.; Veldkamp, Wilfrid B.

    1993-01-01

    We describe the current state of binary optics, addressing both the technology and the industry (i.e., marketplace). With respect to the technology, the two dominant aspects are optical design methods and fabrication capabilities, with the optical design problem being limited by human innovation in the search for new applications and the fabrication issue being limited by the availability of resources required to improve fabrication capabilities. With respect to the industry, the current marketplace does not favor binary optics as a separate product line and so we expect that companies whose primary purpose is the production of binary optics will not represent the bulk of binary optics production. Rather, binary optics' more natural role is as an enabling technology - a technology which will directly result in a competitive advantage in a company's other business areas - and so we expect that the majority of binary optics will be produced for internal use.

  14. Molecular Approaches to Optical Biosensors

    Fierke, Carol

    1998-01-01

    The goal of this proposal was to develop methodologies for the optimization of field-deployable optical biosensors, in general, and, in particular, to optimize a carbonic anhydrase-based fiber optic zinc biosensor...

  15. Nonlinear compression of optical solitons

    linear pulse propagation is the nonlinear Schrödinger (NLS) equation [1]. There are ... Optical pulse compression finds important applications in optical fibres. The pulse com ..... to thank CSIR, New Delhi for financial support in the form of SRF.

  16. Holography Experiments on Optical Imaging.

    Bonczak, B.; Dabrowski, J.

    1979-01-01

    Describes experiments intended to produce a better understanding of the holographic method of producing images and optical imaging by other optical systems. Application of holography to teaching physics courses is considered. (Author/SA)

  17. Fundamentals of plastic optical fibers

    Koike, Yasuhiro

    2014-01-01

    Polymer photonics is an interdisciplinary field which demands excellence both in optics (photonics) and materials science (polymer). However, theses disciplines have developed independently, and therefore the demand for a comprehensive work featuring the fundamentals of photonic polymers is greater than ever.This volume focuses on Polymer Optical Fiber and their applications. The first part of the book introduces typical optical fibers according to their classifications of material, propagating mode, and structure. Optical properties, the high bandwidth POF and transmission loss are discussed,

  18. Phase Referencing in Optical Interferometry

    Filho, Mercedes E.; Garcia, Paulo; Duvert, Gilles; Duchene, Gaspard; Thiebaut, Eric; Young, John; Absil, Olivier; Berger, Jean-Phillipe; Beckert, Thomas; Hoenig, Sebastian; Schertl, Dieter; Weigelt, Gerd; Testi, Leonardo; Tatuli, Eric; Borkowski, Virginie

    2008-01-01

    One of the aims of next generation optical interferometric instrumentation is to be able to make use of information contained in the visibility phase to construct high dynamic range images. Radio and optical interferometry are at the two extremes of phase corruption by the atmosphere. While in radio it is possible to obtain calibrated phases for the science objects, in the optical this is currently not possible. Instead, optical interferometry has relied on closure phase techniques to produce...

  19. Atomic optics. The optics of the year 2000?

    Guzman, Angela M.

    1998-01-01

    In atom optics the roles of light and matter are exchanged with respect to those of conventional optics. Atom optics makes possible the manipulation of atoms with lasers. This review deals with foundations and recent developments on atom optics: laser cooling and trapping, optical lattices, Bose-Einstein Condensation (BEC), and the atom laser. Main features of BEC and theoretical models for generation of a coherent atomic beam are described, indicating the technological challenges involved in their implementation. Special attention is devoted to the model of Guzman et al. perspectives and possible applications are mentioned

  20. Viscous optical clearing agent for in vivo optical imaging

    Deng, Zijian; Jing, Lijia; Wu, Ning; lv, Pengyu; Jiang, Xiaoyun; Ren, Qiushi; Li, Changhui

    2014-07-01

    By allowing more photons to reach deeper tissue, the optical clearing agent (OCA) has gained increasing attention in various optical imaging modalities. However, commonly used OCAs have high fluidity, limiting their applications in in vivo studies with oblique, uneven, or moving surfaces. In this work, we reported an OCA with high viscosity. We measured the properties of this viscous OCA, and tested its successful performances in the imaging of a living animal's skin with two optical imaging modalities: photoacoustic microscopy and optical coherence tomography. Our results demonstrated that the viscous OCA has a great potential in the study of different turbid tissues using various optical imaging modalities.