Highest-order optical phonon-mediated relaxation in CdTe/ZnTe quantum dots

International Nuclear Information System (INIS)

Masumoto, Yasuaki; Nomura, Mitsuhiro; Okuno, Tsuyoshi; Terai, Yoshikazu; Kuroda, Shinji; Takita, K.

2003-01-01

The highest 19th-order longitudinal optical (LO) phonon-mediated relaxation was observed in photoluminescence excitation spectra of CdTe self-assembled quantum dots grown in ZnTe. Hot excitons photoexcited highly in the ZnTe barrier layer are relaxed into the wetting-layer state by emitting multiple LO phonons of the barrier layer successively. Below the wetting-layer state, the LO phonons involved in the relaxation are transformed to those of interfacial Zn x Cd 1-x Te surrounding CdTe quantum dots. The ZnTe-like and CdTe-like LO phonons of Zn x Cd 1-x Te and lastly acoustic phonons are emitted in the relaxation into the CdTe dots. The observed main relaxation is the fast relaxation directly into CdTe quantum dots and is not the relaxation through either the wetting-layer quantum well or the band bottom of the ZnTe barrier layer. This observation shows very efficient optical phonon-mediated relaxation of hot excitons excited highly in the ZnTe conduction band through not only the ZnTe extended state but also localized state in the CdTe quantum dots reflecting strong exciton-LO phonon interaction of telluride compounds

CO{sub 2} INFRARED PHONON MODES IN INTERSTELLAR ICE MIXTURES

Energy Technology Data Exchange (ETDEWEB)

Cooke, Ilsa R. [Department of Chemistry, University of Virginia, McCormick Road, Charlottesville, VA 22904 (United States); Fayolle, Edith C.; Öberg, Karin I., E-mail: irc5zb@virginia.edu [Harvard-Smithsonian Center for Astrophysics, 60 Garden Street, Cambridge, MA 02138 (United States)

2016-11-20

CO{sub 2} ice is an important reservoir of carbon and oxygen in star- and planet-forming regions. Together with water and CO, CO{sub 2} sets the physical and chemical characteristics of interstellar icy grain mantles, including desorption and diffusion energies for other ice constituents. A detailed understanding of CO{sub 2} ice spectroscopy is a prerequisite to characterize CO{sub 2} interactions with other volatiles both in interstellar ices and in laboratory experiments of interstellar ice analogs. We report laboratory spectra of the CO{sub 2} longitudinal optical (LO) phonon mode in pure CO{sub 2} ice and in CO{sub 2} ice mixtures with H{sub 2}O, CO, and O{sub 2} components. We show that the LO phonon mode position is sensitive to the mixing ratio of various ice components of astronomical interest. In the era of the James Webb Space Telescope , this characteristic could be used to constrain interstellar ice compositions and morphologies. More immediately, LO phonon mode spectroscopy provides a sensitive probe of ice mixing in the laboratory and should thus enable diffusion measurements with higher precision than has been previously possible.

Designing broad phononic band gaps for in-plane modes

Science.gov (United States)

Li, Yang Fan; Meng, Fei; Li, Shuo; Jia, Baohua; Zhou, Shiwei; Huang, Xiaodong

2018-03-01

Phononic crystals are known as artificial materials that can manipulate the propagation of elastic waves, and one essential feature of phononic crystals is the existence of forbidden frequency range of traveling waves called band gaps. In this paper, we have proposed an easy way to design phononic crystals with large in-plane band gaps. We demonstrated that the gap between two arbitrarily appointed bands of in-plane mode can be formed by employing a certain number of solid or hollow circular rods embedded in a matrix material. Topology optimization has been applied to find the best material distributions within the primitive unit cell with maximal band gap width. Our results reveal that the centroids of optimized rods coincide with the point positions generated by Lloyd's algorithm, which deepens our understandings on the formation mechanism of phononic in-plane band gaps.

Room-Temperature Coherent Optical Phonon in 2D Electronic Spectra of CH<sub>3sub>NH>3sub>PbI>3sub> Perovskite as a Possible Cooling Bottleneck

Energy Technology Data Exchange (ETDEWEB)

Monahan, Daniele M. [Univ. of California, Berkeley, CA (United States); Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States); Kavli Energy NanoSciences Inst. at Berkeley, Berkeley, CA (United States); Guo, Liang [Univ. of California, Berkeley, CA (United States); Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States); Kavli Energy NanoSciences Inst. at Berkeley, Berkeley, CA (United States); Lin, Jia [Univ. of California, Berkeley, CA (United States); Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States); Kavli Energy NanoSciences Inst. at Berkeley, Berkeley, CA (United States); Dou, Letian [Univ. of California, Berkeley, CA (United States); Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States); Kavli Energy NanoSciences Inst. at Berkeley, Berkeley, CA (United States); Yang, Peidong [Univ. of California, Berkeley, CA (United States); Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States); Kavli Energy NanoSciences Inst. at Berkeley, Berkeley, CA (United States); Fleming, Graham R. [Univ. of California, Berkeley, CA (United States); Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States); Kavli Energy NanoSciences Inst. at Berkeley, Berkeley, CA (United States)

2017-06-29

A hot phonon bottleneck may be responsible for slow hot carrier cooling in methylammonium lead iodide hybrid perovskite, creating the potential for more efficient hot carrier photovoltaics. In room-temperature 2D electronic spectra near the band edge, we observe in this paper amplitude oscillations due to a remarkably long lived 0.9 THz coherent phonon population at room temperature. This phonon (or set of phonons) is assigned to angular distortions of the Pb–I lattice, not coupled to cation rotations. The strong coupling between the electronic transition and the 0.9 THz mode(s), together with relative isolation from other phonon modes, makes it likely to cause a phonon bottleneck. Finally, the pump frequency resolution of the 2D spectra also enables independent observation of photoinduced absorptions and bleaches independently and confirms that features due to band gap renormalization are longer-lived than in transient absorption spectra.

Designing Phononic Crystals with Wide and Robust Band Gaps

Science.gov (United States)

Jia, Zian; Chen, Yanyu; Yang, Haoxiang; Wang, Lifeng

2018-04-01

Phononic crystals (PnCs) engineered to manipulate and control the propagation of mechanical waves have enabled the design of a range of novel devices, such as waveguides, frequency modulators, and acoustic cloaks, for which wide and robust phononic band gaps are highly preferable. While numerous PnCs have been designed in recent decades, to the best of our knowledge, PnCs that possess simultaneous wide and robust band gaps (to randomness and deformations) have not yet been reported. Here, we demonstrate that by combining the band-gap formation mechanisms of Bragg scattering and local resonances (the latter one is dominating), PnCs with wide and robust phononic band gaps can be established. The robustness of the phononic band gaps are then discussed from two aspects: robustness to geometric randomness (manufacture defects) and robustness to deformations (mechanical stimuli). Analytical formulations further predict the optimal design parameters, and an uncertainty analysis quantifies the randomness effect of each designing parameter. Moreover, we show that the deformation robustness originates from a local resonance-dominant mechanism together with the suppression of structural instability. Importantly, the proposed PnCs require only a small number of layers of elements (three unit cells) to obtain broad, robust, and strong attenuation bands, which offer great potential in designing flexible and deformable phononic devices.

Designing Phononic Crystals with Wide and Robust Band Gaps

Energy Technology Data Exchange (ETDEWEB)

Chen, Yanyu [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Jia, Zian [State University of New York at Stony Brook; Yang, Haoxiang [State University of New York at Stony Brook; Wang, Lifeng [State University of New York at Stony Brook

2018-04-16

Phononic crystals (PnCs) engineered to manipulate and control the propagation of mechanical waves have enabled the design of a range of novel devices, such as waveguides, frequency modulators, and acoustic cloaks, for which wide and robust phononic band gaps are highly preferable. While numerous PnCs have been designed in recent decades, to the best of our knowledge, PnCs that possess simultaneous wide and robust band gaps (to randomness and deformations) have not yet been reported. Here, we demonstrate that by combining the band-gap formation mechanisms of Bragg scattering and local resonances (the latter one is dominating), PnCs with wide and robust phononic band gaps can be established. The robustness of the phononic band gaps are then discussed from two aspects: robustness to geometric randomness (manufacture defects) and robustness to deformations (mechanical stimuli). Analytical formulations further predict the optimal design parameters, and an uncertainty analysis quantifies the randomness effect of each designing parameter. Moreover, we show that the deformation robustness originates from a local resonance-dominant mechanism together with the suppression of structural instability. Importantly, the proposed PnCs require only a small number of layers of elements (three unit cells) to obtain broad, robust, and strong attenuation bands, which offer great potential in designing flexible and deformable phononic devices.

Phonon-induced optical superlattice.

Science.gov (United States)

de Lima, M M; Hey, R; Santos, P V; Cantarero, A

2005-04-01

We demonstrate the formation of a dynamic optical superlattice through the modulation of a semiconductor microcavity by stimulated acoustic phonons. The high coherent phonon population produces a folded optical dispersion relation with well-defined energy gaps and renormalized energy levels, which are accessed using reflection and diffraction experiments.

Low frequency phononic band structures in two-dimensional arc-shaped phononic crystals

International Nuclear Information System (INIS)

Xu, Zhenlong; Wu, Fugen; Guo, Zhongning

2012-01-01

The low frequency phononic band structures of two-dimensional arc-shaped phononic crystals (APCs) were studied by the transfer matrix method in cylindrical coordinates. The results showed the first phononic band gaps (PBGs) of APCs from zero Hz with low modes. Locally resonant (LR) gaps were obtained with higher-order rotation symmetry, due to LR frequencies corresponding to the speeds of acoustic waves in the materials. These properties can be efficiently used in a structure for low frequencies that are forbidden, or in a device that permits a narrow window of frequencies. -- Highlights: ► We report a new class of quasi-periodic hetero-structures, arc-shaped phononic crystals (APCs). ► The results show the first PBGs start with zero Hz with low modes. ► Locally resonant (LR) gaps were obtained with higher-order rotation symmetry, due to LR frequencies corresponding to the speeds of acoustic waves in the materials.

Observation of band gaps in the gigahertz range and deaf bands in a hypersonic aluminum nitride phononic crystal slab

Science.gov (United States)

Gorisse, M.; Benchabane, S.; Teissier, G.; Billard, C.; Reinhardt, A.; Laude, V.; Defaÿ, E.; Aïd, M.

2011-06-01

We report on the observation of elastic waves propagating in a two-dimensional phononic crystal composed of air holes drilled in an aluminum nitride membrane. The theoretical band structure indicates the existence of an acoustic band gap centered around 800 MHz with a relative bandwidth of 6.5% that is confirmed by gigahertz optical images of the surface displacement. Further electrical measurements and computation of the transmission reveal a much wider attenuation band that is explained by the deaf character of certain bands resulting from the orthogonality of their polarization with that of the source.

Long-wavelength optical phonon behavior in uniaxial strained graphene: Role of electron-phonon interaction

Science.gov (United States)

Assili, M.; Haddad, S.

2014-09-01

We derive the frequency shifts and the broadening of Γ-point longitudinal optical (LO) and transverse optical (TO) phonon modes, due to electron-phonon interaction, in graphene under uniaxial strain as a function of the electron density and the disorder amount. We show that, in the absence of a shear strain component, such interaction gives rise to a lifting of the degeneracy of the LO and TO modes which contributes to the splitting of the G Raman band. The anisotropy of the electronic spectrum, induced by the strain, results in a polarization dependence of the LO and TO modes. This dependence is in agreement with the experimental results showing a periodic modulation of the Raman intensity of the split G peak. Moreover, the anomalous behavior of the frequency shift reported in undeformed graphene is found to be robust under strain.

Enhancement of phononic band gaps in ternary/binary structure

International Nuclear Information System (INIS)

Aly, Arafa H.; Mehaney, Ahmed

2012-01-01

Based on the transfer matrix method (TMM) and Bloch theory, the interaction of elastic waves (normal incidence) with 1D phononic crystal had been studied. The transfer matrix method was obtained for both longitudinal and transverse waves by applying the continuity conditions between the consecutive unit cells. Dispersion relations are calculated and plotted for both binary and ternary structures. Also we have investigated the corresponding effects on the band gaps values for the two types of phononic crystals. Furthermore, it can be observed that the complete band gaps are located in the common frequency stop-band regions. Numerical simulations are performed to investigate the effect of different thickness ratios inside each unit cell on the band gap values, as well as unit cells thickness on the central band gap frequency. These phononic band gap materials can be used as a filter for elastic waves at different frequencies values.

Temperature dependence of the optical energy gap in CdS sub x Se sub 1 sub - sub x quantum dots

CERN Document Server

Kunets, V P; Kunets, V P; Lisitsa, M P; Malysh, N I

2002-01-01

The temperature dependence of the optical energy gap E sub g (T) in CdS sub x Se sub 1 sub - sub x quantum dots synthesized in a borosilicate glass matrix has been investigated in the range of 4.2-500 K. A dependence similar to that for bulk crystals is observed for dots with r-bar > a sub B (r-bar being an average radius of the dot and a sub B the Bohr exciton radius in the bulk), which is described by Varshni formula within the whole temperature range. Deviations from the Varshni dependence in the range 4.2-100 K and smaller band-gap temperature coefficient are observed for dots with r-bar < a sub B. These results are explained in terms of the decrease of the macroscopic electron-phonon interaction potential and the modification of the vibration spectrum peculiar to the dot volume shrinkage

Band-to-band tunneling in a carbon nanotube metal-oxide-semiconductor field-effect transistor is dominated by phonon-assisted tunneling.

Science.gov (United States)

Koswatta, Siyuranga O; Lundstrom, Mark S; Nikonov, Dmitri E

2007-05-01

Band-to-band tunneling (BTBT) devices have recently gained a lot of interest due to their potential for reducing power dissipation in integrated circuits. We have performed extensive simulations for the BTBT operation of carbon nanotube metal-oxide-semiconductor field-effect transistors (CNT-MOSFETs) using the nonequilibrium Green's function formalism for both ballistic and dissipative quantum transport. In comparison with recently reported experimental data (J. Am. Chem. Soc. 2006, 128, 3518-3519), we have obtained strong evidence that BTBT in CNT-MOSFETs is dominated by optical phonon assisted inelastic transport, which can have important implications on the transistor characteristics. It is shown that, under large biasing conditions, two-phonon scattering may also become important.

Coupling of Hubbard fermions with phonons in La{sub 2} CuO{sub 4}: A combined study using density-functional theory and the generalized tight-binding method

Energy Technology Data Exchange (ETDEWEB)

Shneyder, E.I., E-mail: shneyder@iph.krasn.ru [Kirensky Institute of Physics SB RAS, Krasnoyarsk 660036 (Russian Federation); Reshetnev Siberian State Aerospace University, Krasnoyarsk 660014 (Russian Federation); Spitaler, J. [Materials Center Leoben Forschung GmbH, Rosegger-Straße 18, A-8700 Leoben (Austria); Kokorina, E.E.; Nekrasov, I.A. [Institute of Electrophysics UB RAS, Amundsena Str. 106, 620016 Yekaterinburg (Russian Federation); Gavrichkov, V.A. [Kirensky Institute of Physics SB RAS, Krasnoyarsk 660036 (Russian Federation); Draxl, C. [Physics Department and IRIS Adlershof, Humboldt-Universität zu Berlin, Zum Großen Windkanal 6, 12489 Berlin (Germany); Ovchinnikov, S.G. [Kirensky Institute of Physics SB RAS, Krasnoyarsk 660036 (Russian Federation)

2015-11-05

We present results for the electron-phonon interaction of the Γ-point phonons in the tetragonal high-temperature phase of La{sub 2} CuO{sub 4} obtained from a hybrid scheme, combining density-functional theory (DFT) with the generalized tight-binding approach. As a starting point, eigenfrequencies and eigenvectors for the Γ-point phonons are determined from DFT within the frozen phonon approach utilizing the augmented plane wave + local orbitals method. The so obtained characteristics of electron-phonon coupling are converted into parameters of the generalized tight-binding method. This approach is a version of cluster perturbation theory and takes the strong on-site electron correlations into account. The obtained parameters describe the interaction of phonons with Hubbard fermions which form quasiparticle bands in strongly correlated electron systems. As a result, it is found that the Γ-point phonons with the strongest electron-phonon interaction are the A{sub 2u} modes (236 cm{sup −1}, 131 cm{sup −1} and 476 cm{sup −1}). Finally it is shown, that the single-electron spectral-weight redistribution between different Hubbard fermion quasiparticles results in a suppression of electron-phonon interaction which is strongest for the triplet Hubbard band with z oriented copper and oxygen electrons. - Highlights: • Electron-phonon interaction in strongly correlated electron systems is analyzed. • Interaction parameters between strongly correlated electrons and phonons are obtained. • The suppression of these parameters by strong electron correlations is demonstrated.

Observation of coherent optical phonons excited by femtosecond laser radiation in Sb films by ultrafast electron diffraction method

Energy Technology Data Exchange (ETDEWEB)

Mironov, B. N.; Kompanets, V. O.; Aseev, S. A., E-mail: isanfemto@yandex.ru [Russian Academy of Sciences, Institute of Spectroscopy (Russian Federation); Ischenko, A. A. [Moscow Technological University, Institute of High Chemical Technologies (Russian Federation); Kochikov, I. V. [Moscow State University (Russian Federation); Misochko, O. V. [Russian Academy of Sciences, Institute of Solid State Physics (Russian Federation); Chekalin, S. V.; Ryabov, E. A. [Russian Academy of Sciences, Institute of Spectroscopy (Russian Federation)

2017-03-15

The generation of coherent optical phonons in a polycrystalline antimony film sample has been investigated using femtosecond electron diffraction method. Phonon vibrations have been induced in the Sb sample by the main harmonic of a femtosecond Ti:Sa laser (λ = 800 nm) and probed by a pulsed ultrashort photoelectron beam synchronized with the pump laser. The diffraction patterns recorded at different times relative to the pump laser pulse display oscillations of electron diffraction intensity corresponding to the frequencies of vibrations of optical phonons: totally symmetric (A{sub 1g}) and twofold degenerate (E{sub g}) phonon modes. The frequencies that correspond to combinations of these phonon modes in the Sb sample have also been experimentally observed.

Mechanism of current modulation by optic phonon emission in heterojunction tunneling experiments

International Nuclear Information System (INIS)

Hanna, C.B.; Hellman, E.S.; Laughlin, R.B.

1985-01-01

We explain recent observations by Hickmott et al. of sequential longitudinal optic phonon emission in tunneling currents of GaAs-Al/sub x/Ga/sub 1-x/As heterojunctions in terms of inhomogeneous tunneling and a magnetopolaronic mass correction. 16 refs., 13 figs

Below-gap absorption and precipitation in n-type Hg/sub 1-x/Cd/sub x/Te

International Nuclear Information System (INIS)

Qian Dingrong

1986-01-01

Free electron absorption spectra due to the scattering on optical phonons, acoustic phonons, and ionized impurities are calculated using Haga and Kimura's theory and Tang's two-mode Callen effective charges taking into account the nonparabolicity of the conduction band and the two-mode behaviour of the optical phonons of Hg/sub 1-x/Cd/sub x/Te. Free hole absorption spectra including both intra- and inter-band absorptions are also calculated. In addition, extinction spectra due to the absorption and scattering of light by precipitates of Te and HgTe in the crystal are included so as to give a good account for the measured below-gap absorption spectra. Therefore, the specific precipitates, their concentration and size distribution are obtained from the fits to the absorption spectra measured at 100 and 300 K for two samples. (author)

Low-loss, infrared and terahertz nanophotonics using surface phonon polaritons

Directory of Open Access Journals (Sweden)

Caldwell Joshua D.

2015-04-01

Full Text Available The excitation of surface-phonon-polariton (SPhP modes in polar dielectric crystals and the associated new developments in the field of SPhPs are reviewed. The emphasis of this work is on providing an understanding of the general phenomenon, including the origin of the Reststrahlen band, the role that optical phonons in polar dielectric lattices play in supporting sub-diffraction-limited modes and how the relatively long optical phonon lifetimes can lead to the low optical losses observed within these materials. Based on this overview, the achievements attained to date and the potential technological advantages of these materials are discussed for localized modes in nanostructures, propagating modes on surfaces and in waveguides and novel metamaterial designs, with the goal of realizing low-loss nanophotonics and metamaterials in the mid-infrared to terahertz spectral ranges.

Bandgap measurements and the peculiar splitting of E{sub 2}{sup H} phonon modes of In{sub x}Al{sub 1-x}N nanowires grown by plasma assisted molecular beam epitaxy

Energy Technology Data Exchange (ETDEWEB)

Tangi, Malleswararao; Mishra, Pawan; Janjua, Bilal; Ng, Tien Khee; Prabaswara, Aditya; Ooi, Boon S., E-mail: boon.ooi@kaust.edu.sa [Photonics Laboratory, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900 (Saudi Arabia); Anjum, Dalaver H.; Yang, Yang [Adavanced nanofabrication Imaging and characterization, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900 (Saudi Arabia); Albadri, Abdulrahman M.; Alyamani, Ahmed Y.; El-Desouki, Munir M. [National Center for Nanotechnology, King Abdulaziz City for Science and Technology (KACST), Riyadh 11442-6086 (Saudi Arabia)

2016-07-28

The dislocation free In{sub x}Al{sub 1-x}N nanowires (NWs) are grown on Si(111) by nitrogen plasma assisted molecular beam epitaxy in the temperature regime of 490 °C–610 °C yielding In composition ranges over 0.50 ≤ x ≤ 0.17. We study the optical properties of these NWs by spectroscopic ellipsometry (SE), photoluminescence, and Raman spectroscopies since they possesses minimal strain with reduced defects comparative to the planar films. The optical bandgap measurements of In{sub x}Al{sub 1-x}N NWs are demonstrated by SE where the absorption edges of the NW samples are evaluated irrespective of substrate transparency. A systematic Stoke shift of 0.04–0.27 eV with increasing x was observed when comparing the micro-photoluminescence spectra with the Tauc plot derived from SE. The micro-Raman spectra in the NWs with x = 0.5 showed two-mode behavior for A{sub 1}(LO) phonons and single mode behavior for E{sub 2}{sup H} phonons. As for x = 0.17, i.e., high Al content, we observed a peculiar E{sub 2}{sup H} phonon mode splitting. Further, we observe composition dependent frequency shifts. The 77 to 600 K micro-Raman spectroscopy measurements show that both AlN- and InN-like modes of A{sub 1}(LO) and E{sub 2}{sup H} phonons in In{sub x}Al{sub 1-x}N NWs are redshifted with increasing temperature, similar to that of the binary III group nitride semiconductors. These studies of the optical properties of the technologically important In{sub x}Al{sub 1-x}N nanowires will path the way towards lasers and light-emitting diodes in the wavelength of the ultra-violet and visible range.

Microscopic theory of multiple-phonon-mediated dephasing and relaxation of quantum dots near a photonic band gap

Science.gov (United States)

Roy, Chiranjeeb; John, Sajeev

2010-02-01

We derive a quantum theory of the role of acoustic and optical phonons in modifying the optical absorption line shape, polarization dynamics, and population dynamics of a two-level atom (quantum dot) in the “colored” electromagnetic vacuum of a photonic band-gap (PBG) material. This is based on a microscopic Hamiltonian describing both radiative and vibrational processes quantum mechanically. We elucidate the extent to which phonon-assisted decay limits the lifetime of a single photon-atom bound state and derive the modified spontaneous emission dynamics due to coupling to various phonon baths. We demonstrate that coherent interaction with undamped phonons can lead to an enhanced lifetime of a photon-atom bound state in a PBG. This results in reduction of the steady-state atomic polarization but an increase in the fractionalized upper state population in the photon-atom bound state. We demonstrate, on the other hand, that the lifetime of the photon-atom bound state in a PBG is limited by the lifetime of phonons due to lattice anharmonicities (breakup of phonons into lower energy phonons) and purely nonradiative decay. We also derive the modified polarization decay and dephasing rates in the presence of such damping. This leads to a microscopic, quantum theory of the optical absorption line shapes. Our model and formalism provide a starting point for describing dephasing and relaxation in the presence of external coherent fields and multiple quantum dot interactions in electromagnetic reservoirs with radiative memory effects.

Microscopic theory of multiple-phonon-mediated dephasing and relaxation of quantum dots near a photonic band gap

International Nuclear Information System (INIS)

Roy, Chiranjeeb; John, Sajeev

2010-01-01

We derive a quantum theory of the role of acoustic and optical phonons in modifying the optical absorption line shape, polarization dynamics, and population dynamics of a two-level atom (quantum dot) in the ''colored'' electromagnetic vacuum of a photonic band-gap (PBG) material. This is based on a microscopic Hamiltonian describing both radiative and vibrational processes quantum mechanically. We elucidate the extent to which phonon-assisted decay limits the lifetime of a single photon-atom bound state and derive the modified spontaneous emission dynamics due to coupling to various phonon baths. We demonstrate that coherent interaction with undamped phonons can lead to an enhanced lifetime of a photon-atom bound state in a PBG. This results in reduction of the steady-state atomic polarization but an increase in the fractionalized upper state population in the photon-atom bound state. We demonstrate, on the other hand, that the lifetime of the photon-atom bound state in a PBG is limited by the lifetime of phonons due to lattice anharmonicities (breakup of phonons into lower energy phonons) and purely nonradiative decay. We also derive the modified polarization decay and dephasing rates in the presence of such damping. This leads to a microscopic, quantum theory of the optical absorption line shapes. Our model and formalism provide a starting point for describing dephasing and relaxation in the presence of external coherent fields and multiple quantum dot interactions in electromagnetic reservoirs with radiative memory effects.

Study of vibrational and magnetic excitations in Ni sub c Mg sub 1 sub - sub c O solid solutions by Raman spectroscopy

CERN Document Server

Cazzanelli, E; Mariotto, G; Mironova-Ulmane, N

2003-01-01

The Raman scattering by phonons and magnons was studied for the first time in the polycrystalline solid solutions Ni sub c Mg sub 1 sub - sub c O. The experimental Raman spectrum for c = 0.9 is similar to that of NiO and consists of six well resolved bands, whose origins are the disorder-induced one-phonon scattering (bands at 400 and 500 cm sup - sup 1), two-phonon scattering (bands at 750, 900, and 1100 cm sup - sup 1), and two-magnon scattering (the broad band at approx 1400 cm sup - sup 1). We found that the dependence of the two-magnon band in solid solutions on the composition and temperature is consistent with their magnetic phase diagram. We also observed that the relative contribution of two-phonon scattering decreases strongly upon dilution with magnesium ions and disappears completely at c < 0.5. Such behaviour is explained in terms of a disorder-induced effect, which increases the probability of the one-phonon scattering processes.

Freeform Phononic Waveguides

Directory of Open Access Journals (Sweden)

Georgios Gkantzounis

2017-11-01

Full Text Available We employ a recently introduced class of artificial structurally-disordered phononic structures that exhibit large and robust elastic frequency band gaps for efficient phonon guiding. Phononic crystals are periodic structures that prohibit the propagation of elastic waves through destructive interference and exhibit large band gaps and ballistic propagation of elastic waves in the permitted frequency ranges. In contrast, random-structured materials do not exhibit band gaps and favour localization or diffusive propagation. Here, we use structures with correlated disorder constructed from the so-called stealthy hyperuniform disordered point patterns, which can smoothly vary from completely random to periodic (full order by adjusting a single parameter. Such amorphous-like structures exhibit large band gaps (comparable to the periodic ones, both ballistic-like and diffusive propagation of elastic waves, and a large number of localized modes near the band edges. The presence of large elastic band gaps allows the creation of waveguides in hyperuniform materials, and we analyse various waveguide architectures displaying nearly 100% transmission in the GHz regime. Such phononic-circuit architectures are expected to have a direct impact on integrated micro-electro-mechanical filters and modulators for wireless communications and acousto-optical sensing applications.

Structural phase change and optical band gap bowing in hot wall deposited CdSe{sub x}Te{sub 1-x} thin films

Energy Technology Data Exchange (ETDEWEB)

Muthukumarasamy, N. [Department of Physics, Coimbatore Institute of Technology, Coimbatore, Tamilnadu (India); Jayakumar, S.; Kannan, M.D.; Balasundaraprabhu, R. [Thin Film Center, PSG College of Technology, Coimbatore, Tamilnadu (India)

2009-04-15

CdSe{sub x}Te{sub 1-x} thin films of different compositions have been deposited on glass substrates by hot wall deposition method under conditions very close to thermodynamical equilibrium with minimum loss of material. The structural studies carried out on the deposited films revealed that they are crystalline in nature and exhibit either cubic zinc blende or hexagonal phase or both depending on the composition of the material. The lattice parameter values for both cubic and hexagonal phases have been determined and are observed to vary with composition according to Vegard's law. The optical properties of the deposited CdSe{sub x}Te{sub 1-x} thin films have been studied using transmittance spectra. The spectra shows a sharp fall in transmittance at wavelength corresponding to the band gap of the material. The optical band gap has been determined and found to be direct allowed. The band gap has been observed to strongly depend on film composition. The variation of band gap with composition has been observed to be quadratic in nature exhibiting a bowing behaviour. (author)

Probing channel temperature profiles in Al{sub x}Ga{sub 1−x}N/GaN high electron mobility transistors on 200 mm diameter Si(111) by optical spectroscopy

Energy Technology Data Exchange (ETDEWEB)

Kyaw, L. M., E-mail: a0048661@nus.edu.sg [Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117576 (Singapore); Institute of Materials Research and Engineering, A*STAR (Agency for Science, Technology, and Research), Singapore 117602 (Singapore); Bera, L. K.; Dolmanan, S. B.; Tan, H. R.; Bhat, T. N.; Tripathy, S., E-mail: tripathy-sudhiranjan@imre.a-star.edu.sg [Institute of Materials Research and Engineering, A*STAR (Agency for Science, Technology, and Research), Singapore 117602 (Singapore); Liu, Y.; Bera, M. K.; Singh, S. P.; Chor, E. F. [Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117576 (Singapore)

2014-08-18

Using micro-Raman and photoluminescence (PL) techniques, the channel temperature profile is probed in Al{sub x}Ga{sub 1-x}N/GaN high electron mobility transistors (HEMTs) fabricated on a 200 mm diameter Si(111) substrate. In particular, RuO{sub x}-based gate is used due to the semitransparent nature to the optical excitation wavelengths, thus allowing much accurate thermal investigations underneath the gate. To determine the channel temperature profile in devices subjected to different electrical bias voltages, the GaN band-edge PL peak shift calibration with respect to temperature is used. PL analyses show a maximum channel temperature up to 435 K underneath the gate edge between gate and drain, where the estimated thermal resistance in such a HEMT structure is about 13.7 KmmW{sup −1} at a power dissipation of ∼10 W/mm. The temperature profiles from micro-Raman measurements are also addressed from the E{sub 2}-high optical phonon peak shift of GaN, and this method also probes the temperature-induced peak shifts of optical phonon from Si thus showing the nature of thermal characteristics at the AlN/Si substrate interface.

Reststrahlen Band Optics for the Advancement of Far-Infrared Optical Architecture

Science.gov (United States)

Streyer, William Henderson

The dissertation aims to build a case for the benefits and means of investigating novel optical materials and devices operating in the underdeveloped far-infrared (20 - 60 microns) region of the electromagnetic spectrum. This dissertation and the proposed future investigations described here have the potential to further the advancement of new and enhanced capabilities in fields such as astronomy, medicine, and the petrochemical industry. The first several completed projects demonstrate techniques for developing far-infrared emission sources using selective thermal emitters, which could operate more efficiently than their simple blackbody counterparts commonly used as sources in this wavelength region. The later projects probe the possible means of linking bulk optical phonon populations through interaction with surface modes to free space photons. This is a breakthrough that would enable the development of a new class of light sources operating in the far-infrared. Chapter 1 introduces the far-infrared wavelength range along with many of its current and potential applications. The limited capabilities of the available optical architecture in this range are outlined along with a discussion of the state-of-the-art technology available in this range. Some of the basic physical concepts routinely applied in this dissertation are reviewed; namely, the Drude formalism, semiconductor Reststrahlen bands, and surface polaritons. Lastly, some of the physical challenges that impede the further advancement of far-infrared technology, despite remarkable recent success in adjacent regions of the electromagnetic spectrum, are discussed. Chapter 2 describes the experimental and computational methods employed in this dissertation. Spectroscopic techniques used to investigate both the mid-infrared and far-infrared wavelength ranges are reviewed, including a brief description of the primary instrument of infrared spectroscopy, the Fourier Transform Infrared (FTIR) spectrometer

Phonon dispersion models for MgB{sub 2} with application of pressure

Energy Technology Data Exchange (ETDEWEB)

Alarco, Jose A., E-mail: jose.alarco@qut.edu.au; Talbot, Peter C., E-mail: p.talbot@qut.edu.au; Mackinnon, Ian D.R., E-mail: ian.mackinnon@qut.edu.au

2017-05-15

Highlights: • Ab initio DFT MgB{sub 2} phonon dispersion for pressures up to 20 GPa are presented. • Extent of E{sub 2g} phonon anomaly and thermal energy, T{sub δ,} are pressure dependent. • Phonon anomaly thermal energy equivalent to experimental T{sub c} values for MgB{sub 2}. • Computational method to measure T{sub δ} is an effective predictor of T{sub c}. - Abstract: We evaluate, via the Local Density and the Generalised Gradient Approximations to the Density Functional Theory (DFT), the change in form and extent of the E{sub 2g} phonon anomaly of MgB{sub 2} with increase in applied pressure up to 20 GPa. Ab initio DFT calculations on the phonon dispersion (PD) for MgB{sub 2} show a phonon anomaly symmetrically displaced around Γ, the reciprocal lattice origin. This anomaly is related to nesting between diametrically opposite sides of tubular elements of Fermi surfaces, which correspond to sigma bonding and run approximately parallel to the Γ–A reciprocal space direction. The anomaly is parallel to Γ–A and along Γ–M and Γ–K. The extent of the E{sub 2g} phonon anomaly, δ, along Γ–M and Γ–K is a measure of the thermal energy, T{sub δ}, that matches within error the experimental onset superconducting transition temperature, T{sub c}. Ab initio DFT calculations with pressure for −5 GPa < P < 20 GPa show a linear reduction in T{sub δ} that closely matches experimental T{sub c} values for MgB{sub 2}. For phonon-mediated superconductors with AlB{sub 2}–type structures, the thermal energy of the phonon anomaly, T{sub δ}, is a reliable predictor of T{sub c}.

Band structures in Sierpinski triangle fractal porous phononic crystals

International Nuclear Information System (INIS)

Wang, Kai; Liu, Ying; Liang, Tianshu

2016-01-01

In this paper, the band structures in Sierpinski triangle fractal porous phononic crystals (FPPCs) are studied with the aim to clarify the effect of fractal hierarchy on the band structures. Firstly, one kind of FPPCs based on Sierpinski triangle routine is proposed. Then the influence of the porosity on the elastic wave dispersion in Sierpinski triangle FPPCs is investigated. The sensitivity of the band structures to the fractal hierarchy is discussed in detail. The results show that the increase of the hierarchy increases the sensitivity of ABG (Absolute band gap) central frequency to the porosity. But further increase of the fractal hierarchy weakens this sensitivity. On the same hierarchy, wider ABGs could be opened in Sierpinski equilateral triangle FPPC; whilst, a lower ABG could be opened at lower porosity in Sierpinski right-angled isosceles FPPCs. These results will provide a meaningful guidance in tuning band structures in porous phononic crystals by fractal design.

Band structures in Sierpinski triangle fractal porous phononic crystals

Energy Technology Data Exchange (ETDEWEB)

Wang, Kai; Liu, Ying, E-mail: yliu5@bjtu.edu.cn; Liang, Tianshu

2016-10-01

In this paper, the band structures in Sierpinski triangle fractal porous phononic crystals (FPPCs) are studied with the aim to clarify the effect of fractal hierarchy on the band structures. Firstly, one kind of FPPCs based on Sierpinski triangle routine is proposed. Then the influence of the porosity on the elastic wave dispersion in Sierpinski triangle FPPCs is investigated. The sensitivity of the band structures to the fractal hierarchy is discussed in detail. The results show that the increase of the hierarchy increases the sensitivity of ABG (Absolute band gap) central frequency to the porosity. But further increase of the fractal hierarchy weakens this sensitivity. On the same hierarchy, wider ABGs could be opened in Sierpinski equilateral triangle FPPC; whilst, a lower ABG could be opened at lower porosity in Sierpinski right-angled isosceles FPPCs. These results will provide a meaningful guidance in tuning band structures in porous phononic crystals by fractal design.

Enhancing of optic phonon contribution in hydrodynamic phonon transport

Science.gov (United States)

de Tomas, C.; Cantarero, A.; Lopeandia, A. F.; Alvarez, F. X.

2015-10-01

In the framework of the kinetic-collective model of phonon heat transport, we analyze how each range of the phonon frequency spectrum contributes to the total thermal conductivity both in the macro and the nanoscale. For this purpose, we use two case study samples: naturally occurring bulk silicon and a 115 nm of diameter silicon nanowire. We show that the contribution of high-energy phonons (optic branches) is non-negligible only when N-collisions are strongly present. This contribution increases when the effective size of the sample decreases, and it is found to be up to a 10% at room temperature for the 115 nm nanowire, corroborating preliminar ab-initio predictions.

Band gaps of wurtzite Sc{sub x}Ga{sub 1−x}N alloys

Energy Technology Data Exchange (ETDEWEB)

Tsui, H. C. L.; Moram, M. A. [Department of Materials, Imperial College London, Exhibition Road, London SW7 2AZ (United Kingdom); Goff, L. E. [Department of Materials, Imperial College London, Exhibition Road, London SW7 2AZ (United Kingdom); Department of Physics, University of Cambridge, JJ Thomson Avenue, Cambridge CB3 0HE (United Kingdom); Rhode, S. K. [Department of Materials Science and Metallurgy, University of Cambridge, Charles Babbage Road, Cambridge CB3 0FS (United Kingdom); Pereira, S. [CICECO and Dept. Physics, Universidade de Aveiro, 3810-193 Aveiro (Portugal); Beere, H. E.; Farrer, I.; Nicoll, C. A.; Ritchie, D. A. [Department of Physics, University of Cambridge, JJ Thomson Avenue, Cambridge CB3 0HE (United Kingdom)

2015-03-30

Optical transmittance measurements on epitaxial, phase-pure, wurtzite-structure Sc{sub x}Ga{sub 1−x}N films with 0 ≤ x ≤ 0.26 showed that their direct optical band gaps increased from 3.33 eV to 3.89 eV with increasing x, in agreement with theory. These films contained I{sub 1}- and I{sub 2}-type stacking faults. However, the direct optical band gaps decreased from 3.37 eV to 3.26 eV for Sc{sub x}Ga{sub 1−x}N films, which additionally contained nanoscale lamellar inclusions of the zinc-blende phase, as revealed by aberration-corrected scanning transmission electron microscopy. Therefore, we conclude that the apparent reduction in Sc{sub x}Ga{sub 1−x}N band gaps with increasing x is an artefact resulting from the presence of nanoscale zinc-blende inclusions.

Systematic design of phononic band-gap materials and structures by topology optimization

DEFF Research Database (Denmark)

Sigmund, Ole; Jensen, Jakob Søndergaard

2003-01-01

Phononic band-gap materials prevent elastic waves in certain frequency ranges from propagating, and they may therefore be used to generate frequency filters, as beam splitters, as sound or vibration protection devices, or as waveguides. In this work we show how topology optimization can be used...... to design and optimize periodic materials and structures exhibiting phononic band gaps. Firstly, we optimize infinitely periodic band-gap materials by maximizing the relative size of the band gaps. Then, finite structures subjected to periodic loading are optimized in order to either minimize the structural...

Phononic band gap structures as optimal designs

DEFF Research Database (Denmark)

Jensen, Jakob Søndergaard; Sigmund, Ole

2003-01-01

In this paper we use topology optimization to design phononic band gap structures. We consider 2D structures subjected to periodic loading and obtain the distribution of two materials with high contrast in material properties that gives the minimal vibrational response of the structure. Both in...

Band structures in two-dimensional phononic crystals with periodic Jerusalem cross slot

Science.gov (United States)

Li, Yinggang; Chen, Tianning; Wang, Xiaopeng; Yu, Kunpeng; Song, Ruifang

2015-01-01

In this paper, a novel two-dimensional phononic crystal composed of periodic Jerusalem cross slot in air matrix with a square lattice is presented. The dispersion relations and the transmission coefficient spectra are calculated by using the finite element method based on the Bloch theorem. The formation mechanisms of the band gaps are analyzed based on the acoustic mode analysis. Numerical results show that the proposed phononic crystal structure can yield large band gaps in the low-frequency range. The formation mechanism of opening the acoustic band gaps is mainly attributed to the resonance modes of the cavities inside the Jerusalem cross slot structure. Furthermore, the effects of the geometrical parameters on the band gaps are further explored numerically. Results show that the band gaps can be modulated in an extremely large frequency range by the geometry parameters such as the slot length and width. These properties of acoustic waves in the proposed phononic crystals can potentially be applied to optimize band gaps and generate low-frequency filters and waveguides.

Ultrafast atomic-scale visualization of acoustic phonons generated by optically excited quantum dots

Directory of Open Access Journals (Sweden)

Giovanni M. Vanacore

2017-07-01

Full Text Available Understanding the dynamics of atomic vibrations confined in quasi-zero dimensional systems is crucial from both a fundamental point-of-view and a technological perspective. Using ultrafast electron diffraction, we monitored the lattice dynamics of GaAs quantum dots—grown by Droplet Epitaxy on AlGaAs—with sub-picosecond and sub-picometer resolutions. An ultrafast laser pulse nearly resonantly excites a confined exciton, which efficiently couples to high-energy acoustic phonons through the deformation potential mechanism. The transient behavior of the measured diffraction pattern reveals the nonequilibrium phonon dynamics both within the dots and in the region surrounding them. The experimental results are interpreted within the theoretical framework of a non-Markovian decoherence, according to which the optical excitation creates a localized polaron within the dot and a travelling phonon wavepacket that leaves the dot at the speed of sound. These findings indicate that integration of a phononic emitter in opto-electronic devices based on quantum dots for controlled communication processes can be fundamentally feasible.

Ab Initio Study of Electronic Excitation Effects on SrTiO<sub>3sub>

Energy Technology Data Exchange (ETDEWEB)

Zhao, Shijun [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Zhang, Yanwen [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Univ. of Tennessee, Knoxville, TN (United States); Weber, William J. [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Univ. of Tennessee, Knoxville, TN (United States)

2017-11-14

Interaction of energetic ions or lasers with solids often induces electronic excitations that may modify material properties significantly. In this study, effects of electronic excitations on strontium titanate SrTiO<sub>3sub> (STO) are investigated based on first-principles calculations. The lattice structure, electronic properties, lattice vibrational frequencies, and dynamical stabilities are studied in detail. The results suggest that electronic excitation induces charge redistribution that is mainly observed in Ti–O bonds. The electronic band gap increases with increasing electronic excitation, as excitation mainly induces depopulation of Ti 3d states. Phonon analysis indicates that there is a large phonon band gap induced by electronic excitation because of the changes in the vibrational properties of Ti and O atoms. In addition, a new peak appears in the phonon density of states with imaginary frequencies, an indication of lattice instability. Further dynamics simulations confirm that STO undergoes transition to an amorphous structure under strong electronic excitations. In conclusion, the optical properties of STO under electronic excitation are consistent with the evolution of atomic and electronic structures, which suggests a possibility to probe the properties of STO in nonequilibrium state using optical measurement.

Band structures and localization properties of aperiodic layered phononic crystals

Energy Technology Data Exchange (ETDEWEB)

Yan Zhizhong, E-mail: zzyan@bit.edu.cn [Department of Applied Mathematics, Beijing Institute of Technology, Beijing 100081 (China); Zhang Chuanzeng [Department of Civil Engineering, University of Siegen, D-57078 Siegen (Germany)

2012-03-15

The band structures and localization properties of in-plane elastic waves with coupling of longitudinal and transverse modes oblique propagating in aperiodic phononic crystals based on Thue-Morse and Rudin-Shapiro sequences are studied. Using transfer matrix method, the concept of the localization factor is introduced and the correctness is testified through the Rytov dispersion relation. For comparison, the perfect periodic structure and the quasi-periodic Fibonacci system are also considered. In addition, the influences of the random disorder, local resonance, translational and/or mirror symmetries on the band structures of the aperiodic phononic crystals are analyzed in this paper.

Strong Carrier–Phonon Coupling in Lead Halide Perovskite Nanocrystals

Science.gov (United States)

2017-01-01

We highlight the importance of carrier–phonon coupling in inorganic lead halide perovskite nanocrystals. The low-temperature photoluminescence (PL) spectrum of CsPbBr3 has been investigated under a nonresonant and a nonstandard, quasi-resonant excitation scheme, and phonon replicas of the main PL band have been identified as due to the Fröhlich interaction. The energy of longitudinal optical (LO) phonons has been determined from the separation of the zero phonon band and phonon replicas. We reason that the observed LO phonon coupling can only be related to an orthorhombically distorted crystal structure of the perovskite nanocrystals. Additionally, the strength of carrier–phonon coupling has been characterized using the ratio between the intensities of the first phonon replica and the zero-phonon band. PL emission from localized versus delocalized carriers has been identified as the source of the observed discrepancies between the LO phonon energy and phonon coupling strength under quasi-resonant and nonresonant excitation conditions, respectively. PMID:29019652

Inelastic neutron scattering studies of TbNiAlH sub 1 sub . sub 4 and UNiAlH sub 2 sub . sub 0 hydrides

CERN Document Server

Bordallo, H N; Kolomiets, A V; Kalceff, W; Nakotte, H; Eckert, J

2003-01-01

The optical vibrations of hydrogen in TbNiAlH sub 1 sub . sub 4 and UNiAlH sub 2 sub . sub 0 were investigated by means of inelastic neutron scattering. The experimental data were analysed, including multiphonon neutron scattering contributions, calculated in an isotropic harmonic approximation. At least two fundamental H optical peaks were observed in TbNiAlH sub 1 sub . sub 4 , and were assigned to the vibrational modes of hydrogen atoms occupying different interstitial sites in the metal sublattice. The high-energy part of the UNiAlH sub 2 sub . sub 0 spectra is characterized by strong anharmonicity, and a broad fundamental band. The latter can be accounted for by a large dispersion of phonon modes due to the strong H-H interactions, and/or different metal-hydrogen force constants, which may originate from different metal atoms surrounding the H atoms in the unit cell.

Band structure and phonon properties of lithium fluoride at high pressure

Energy Technology Data Exchange (ETDEWEB)

Panchal, J. M., E-mail: amitjignesh@yahoo.co.in [Government Engineering College, Gandhinagar 382028, Gujarat (India); Department of Physics, University School of Sciences, Gujarat University, Ahmedabad 380009, Gujarat (India); Joshi, Mitesh [Government Polytechnic for Girls, Athwagate, Surat395001, Gujarat (India); Gajjar, P. N., E-mail: pngajjar@rediffmail.com [Department of Physics, University School of Sciences, Gujarat University, Ahmedabad 380009, Gujarat (India)

2016-05-23

High pressure structural and electronic properties of Lithium Fluoride (LiF) have been studied by employing an ab-initio pseudopotential method and a linear response scheme within the density functional theory (DFT) in conjunction with quasi harmonic Debye model. The band structure and electronic density of states conforms that the LiF is stable and is having insulator behavior at ambient as well as at high pressure up to 1 Mbar. Conclusions based on Band structure, phonon dispersion and phonon density of states are outlined.

Band structure and phonon properties of lithium fluoride at high pressure

International Nuclear Information System (INIS)

Panchal, J. M.; Joshi, Mitesh; Gajjar, P. N.

2016-01-01

High pressure structural and electronic properties of Lithium Fluoride (LiF) have been studied by employing an ab-initio pseudopotential method and a linear response scheme within the density functional theory (DFT) in conjunction with quasi harmonic Debye model. The band structure and electronic density of states conforms that the LiF is stable and is having insulator behavior at ambient as well as at high pressure up to 1 Mbar. Conclusions based on Band structure, phonon dispersion and phonon density of states are outlined.

Optical band gap demarcation around 2.15 eV depending on preferred orientation growth in red HgI{sub 2} films

Energy Technology Data Exchange (ETDEWEB)

Tyagi, Pankaj, E-mail: pankajtyagicicdu@gmail.com

2017-04-01

Thermally evaporated stoichiometric films of red HgI{sub 2} show preferred orientation growth with either (102) or (002) orientation. The as grown films shows a change from one preferred orientation to another depending on their thickness, open-air heat-treatment and in-situ heat treatment of films. The in-situ heat-treatment of thermally evaporated stoichiometric films of red HgI{sub 2} with preferred growth of (102) orientation shows a gradual linear decrease in film thickness with in-situ heat-treatment temperature. On in-situ heat-treatment above 80 °C, it is found that HgI{sub 2} films become thinner than 900 nm, which are otherwise difficult to grow due to high vapor pressure of HgI{sub 2}. For these films the preferred orientation also changed from (102) to (002). The optical band gap (E{sub g}) also found to increase linearly with in-situ heat-treatment temperature. It is interesting to note that in-situ heat-treated films having (002) orientation had higher values of optical band gap than (102) orientation films. On combining these results with those of as grown and open-air heat-treated red HgI{sub 2} films reported in the literature, it is evident that there exists an optical band gap demarcation around 2.15 eV for red HgI{sub 2} thin films depending on their preferred orientation growth. Films with (102) orientation are found to have optical band gap less than 2.15 eV and those with (002) orientation are found to have optical band gap more than 2.15 eV. This is irrespective of the physical mean of obtaining the preferred orientation. The preferred orientation can be achieved by either physical means such as growing films with higher thickness, heat-treating them for short duration in open air or heat-treating them in-situ.

Beam paths of flexural Lamb waves at high frequency in the first band within phononic crystal-based acoustic lenses

Directory of Open Access Journals (Sweden)

J. Zhao

2014-12-01

Full Text Available This work deals with an analytical and numerical study of the focusing of the lowest order anti-symmetric Lamb wave in gradient index phononic crystals. Computing the ray trajectories of the elastic beam allowed us to analyze the lateral dimensions and shape of the focus, either in the inner or behind the phononic crystal-based acoustic lenses, for frequencies within a broad range in the first band. We analyzed and discussed the focusing behaviors inside the acoustic lenses where the focalization at sub-wavelength scale was achieved. The focalization behind the gradient index phononic crystal is shown to be efficient as well: we report on FMHM = 0.63λ at 11MHz.

Phonon spectra in SiO2 glasses

International Nuclear Information System (INIS)

Perez R, J.F.; Jimenez S, S.; Gonzalez H, J.; Vorobiev, Y.V.; Hernandez L, M.A.; Parga T, J.R.

1999-01-01

Phonon spectra in SiO 2 sol-gel made glasses annealed under different conditions are investigated using infrared absorption and Raman scattering. These data are compared with those obtained in commercial optical-quality quartz. All the materials exhibit the same phonon bands, the exact position and the intensity depend on the measuring technique and on the sample preparation method. The phonon spectra in this material are interpreted on the basis of a simple quasi-linear description of elastic waves in an O-Si-O chain. It is shown that the main features observed in the range 400-1400 cm -1 can be predicted using a quasi-linear chain model in which the band at 1070 cm -1 is assigned to the longitudinal optical waves in the O-Si-O chain with the smallest possible wavelength at the Brillouin zone boundary, the band located around 450 cm -1 is assigned to the transversal optical waves and the band at 800 cm -1 to the longitudinal acoustical waves with the same wavelength. The degree of structural disorder can be also deduced within the framework of the proposed model. (Author)

Ultrafast electron-optical phonon scattering and quasiparticle lifetime in CVD-grown graphene.

Science.gov (United States)

Shang, Jingzhi; Yu, Ting; Lin, Jianyi; Gurzadyan, Gagik G

2011-04-26

Ultrafast quasiparticle dynamics in graphene grown by chemical vapor deposition (CVD) has been studied by UV pump/white-light probe spectroscopy. Transient differential transmission spectra of monolayer graphene are observed in the visible probe range (400-650 nm). Kinetics of the quasiparticle (i.e., low-energy single-particle excitation with renormalized energy due to electron-electron Coulomb, electron-optical phonon (e-op), and optical phonon-acoustic phonon (op-ap) interactions) was monitored with 50 fs resolution. Extending the probe range to near-infrared, we find the evolution of quasiparticle relaxation channels from monoexponential e-op scattering to double exponential decay due to e-op and op-ap scattering. Moreover, quasiparticle lifetimes of mono- and randomly stacked graphene films are obtained for the probe photon energies continuously from 1.9 to 2.3 eV. Dependence of quasiparticle decay rate on the probe energy is linear for 10-layer stacked graphene films. This is due to the dominant e-op intervalley scattering and the linear density of states in the probed electronic band. A dimensionless coupling constant W is derived, which characterizes the scattering strength of quasiparticles by lattice points in graphene.

Research on the Band Gap Characteristics of Two-Dimensional Phononic Crystals Microcavity with Local Resonant Structure

Directory of Open Access Journals (Sweden)

Mao Liu

2015-01-01

Full Text Available A new two-dimensional locally resonant phononic crystal with microcavity structure is proposed. The acoustic wave band gap characteristics of this new structure are studied using finite element method. At the same time, the corresponding displacement eigenmodes of the band edges of the lowest band gap and the transmission spectrum are calculated. The results proved that phononic crystals with microcavity structure exhibited complete band gaps in low-frequency range. The eigenfrequency of the lower edge of the first gap is lower than no microcavity structure. However, for no microcavity structure type of quadrilateral phononic crystal plate, the second band gap disappeared and the frequency range of the first band gap is relatively narrow. The main reason for appearing low-frequency band gaps is that the proposed phononic crystal introduced the local resonant microcavity structure. This study provides a good support for engineering application such as low-frequency vibration attenuation and noise control.

Band structures in the nematic elastomers phononic crystals

Energy Technology Data Exchange (ETDEWEB)

Yang, Shuai [Department of Mechanics, School of Civil Engineering, Beijing Jiaotong University, Beijing 100044 (China); School of Civil Engineering and Architecture, Anyang Normal University, Anyang 455000 (China); Liu, Ying, E-mail: yliu5@bjtu.edu.cn [Department of Mechanics, School of Civil Engineering, Beijing Jiaotong University, Beijing 100044 (China); Liang, Tianshu [Department of Mechanics, School of Civil Engineering, Beijing Jiaotong University, Beijing 100044 (China)

2017-02-01

As one kind of new intelligent materials, nematic elastomers (NEs) represent an exciting physical system that combines the local orientational symmetry breaking and the entropic rubber elasticity, producing a number of unique physical phenomena. In this paper, the potential application of NEs in the band tuning is explored. The band structures in two kinds of NE phononic crystals (PCs) are investigated. Through changing NE intrinsic parameters, the influence of the porosity, director rotation and relaxation on the band structures in NE PCs are analyzed. This work is a meaningful try for application of NEs in acoustic field and proposes a new intelligent strategy in band turning.

Band structures in the nematic elastomers phononic crystals

International Nuclear Information System (INIS)

Yang, Shuai; Liu, Ying; Liang, Tianshu

2017-01-01

As one kind of new intelligent materials, nematic elastomers (NEs) represent an exciting physical system that combines the local orientational symmetry breaking and the entropic rubber elasticity, producing a number of unique physical phenomena. In this paper, the potential application of NEs in the band tuning is explored. The band structures in two kinds of NE phononic crystals (PCs) are investigated. Through changing NE intrinsic parameters, the influence of the porosity, director rotation and relaxation on the band structures in NE PCs are analyzed. This work is a meaningful try for application of NEs in acoustic field and proposes a new intelligent strategy in band turning.

Room temperature ferromagnetism and phonon properties of pure and doped TiO{sub 2} nanoparticles

Energy Technology Data Exchange (ETDEWEB)

Apostolova, I.N. [University of Forestry, Faculty of Forest Industry, 10, Kl. Ohridsky Blvd., 1756 Sofia (Bulgaria); Apostolov, A.T. [University of Architecture, Civil Engineering and Geodesy, Faculty of Hydrotechnics, Department of Physics, 1, Hristo Smirnenski Blvd., 1046 Sofia (Bulgaria); Bahoosh, S.G. [Max Planck Institute of Microstructure Physics, Weinberg 2, 06120 Halle (Germany); Wesselinowa, J.M., E-mail: julia@phys.uni-sofia.bg [University of Sofia, Department of Physics, 5, J. Bouchier Blvd., 1164 Sofia (Bulgaria)

2014-03-15

We have considered the origin of RTFM in TiO{sub 2} nanoparticles (NPs). Further we have studied the properties of the E{sub g1} phonon mode. The phonon frequency of anatase TiO{sub 2} NPs increases whereas in the case of rutile TiO{sub 2} NPs it decreases as the particle size decreases. The phonon damping is always enhanced in the nanosized materials. The hardening of the E{sub g1} mode and the softening of the E{sub g3} mode in anatase TiO{sub 2} NPs could be explained with the different anharmonic spin–phonon interaction constants of these modes. The doping effects with different transition metal ions on the E{sub g1} phonon mode are also discussed. - Highlights: • The origin of RTFM in TiO{sub 2} nanoparticles is investigated. • With decreasing of particle size the phonon frequency of anatase and rutile TiO{sub 2} NPs increases and decreases, respectively. • This could be explained with the different anharmonic spin–phonon interaction constants of these modes. • The phonon damping is always enhanced in the nanosized materials. • The doping effects with different transition metal ions on the E{sub g1} phonon mode are also discussed.

The intermediate phase and low wave number phonon modes in antiferroelectric (Pb{sub 0.97}La{sub 0.02}) (Zr{sub 0.60}Sn{sub 0.40−y}Ti{sub y})O{sub 3} ceramics discovered from temperature dependent Raman spectra

Energy Technology Data Exchange (ETDEWEB)

Ding, Xiaojuan; Guo, Shuang [Department of Electronic Engineering, East China Normal University, Shanghai 200241 (China); Hu, Zhigao, E-mail: zghu@ee.ecnu.edu.cn [Department of Electronic Engineering, East China Normal University, Shanghai 200241 (China); Chen, Xuefeng; Wang, Genshui [Key Laboratory of Inorganic Functional Materials and Devices, Shanghai Institute of Ceramics, Chinese Academy of Sciences, 1295 Dingxi Road, Shanghai 200050 (China); Dong, Xianlin; Chu, Junhao [Department of Electronic Engineering, East China Normal University, Shanghai 200241 (China)

2016-05-15

Optical phonons and phase transitions of (Pb{sub 0.97}La{sub 0.02}) (Zr{sub 0.60}Sn{sub 0.40−y}Ti{sub y})O{sub 3} (PLZST 97/2/60/40-100y/100y) ceramics with different compositions have been investigated by x-ray diffraction and temperature dependent Raman spectra. From the temperature dependence of low wavenumber phonon modes, two phase transitions (antiferroelectric orthorhombic to intermediate phase and intermediate phase to paraelectric cubic phase) were detected. The intermediate phase could be the coexistence one of antiferroelectric orthorhombic and ferroelectric rhombohedral phase. In addition, two modes (a soft mode and an anharmonic hopping central mode) were found in the high temperature paraelectric cubic phase. On cooling, the anharmonic hopping central mode splits into two modes in the terahertz range. Moreover, the antiferrodistortive mode appears in the antiferroelectric orthorhombic phase. Based on the analysis, the phase diagram of PLZST ceramics can be well improved. - Highlights: • The evolution of phonon modes in antiferroelectric PLZST ceramics. • An intermediate phase was found between orthorhombic and cubic phase. • The phase diagram of PLZST ceramics can be well improved.

Comparative study of the two-phonon Raman bands of silicene and graphene

International Nuclear Information System (INIS)

Popov, Valentin N; Lambin, Philippe

2016-01-01

We present a computational study of the two-phonon Raman spectra of silicene and graphene within a density-functional non-orthogonal tight-binding model. Due to the presence of linear bands close to the Fermi energy in the electronic structure of both structures, the Raman scattering by phonons is resonant. We find that the Raman spectra exhibit a crossover behavior for laser excitation close to the π-plasmon energy. This phenomenon is explained by the disappearance of certain paths for resonant Raman scattering and the appearance of other paths beyond this energy. Besides that, the electronic joint density of states (DOS) is divergent at this energy, which is reflected on the behavior of the Raman bands of the two structures in a qualitatively different way. Additionally, a number of Raman bands, originating from divergent phonon DOS at the M point and at points, inside the Brillouin zone, is also predicted. The calculated spectra for graphene are in excellent agreement with available experimental data. The obtained Raman bands can be used for structural characterization of silicene and graphene samples by Raman spectroscopy. (paper)

Electron-optical phonon coupling in superconductors

International Nuclear Information System (INIS)

Rietschel, H.

1975-01-01

The role of the optical phonons in superconductivity is investigated in the case of compounds with different atomic masses Msub(k). It is shown that the electron mass enhancement factor lambda is independent of Msub(k) if the force constant matrix is mass independent. However, when using lambda to calculate Tsub(c), it must be decomposed into its acoustical and optical contributions, which depend separately on Msub(k). Interference scattering from a light and a heavy mass is studied and its contributions to lambda within the free electron approximation. Numerical results are presented for a rocksalt structure crystal with nearest and next nearest neighbour coupling. These results indicate that the optical phonon contributions to lambda may substantially increase Tsub(c). (orig.) [de

First-principles study on the electronic structure, phonons and optical properties of LaB_6 under high-pressure

International Nuclear Information System (INIS)

Chao, Luomeng; Bao, Lihong; Wei, Wei; O, Tegus; Zhang, Zhidong

2016-01-01

The electronic structure, phonons and optical properties of LaB_6 compound under different pressure have been studied by first-principles calculation. The electronic structure calculation shows that the d band along the M-Γ direction of the Brillouin zone moves up with increasing pressure and the band minimum is above the Fermi level at 45 GPa. The pressure-induced charge transfer from La to B atoms is reflected in the upshift of d band along the M-Γ direction with pressure. The calculated phonon dispersion curve at zero pressure is in good agreement with the experimental results. However, the phonon dispersion under high pressure does not show any information about the phase transition at 10 GPa, which was reported previously. The acoustic and optical phonon modes harden all the way with increasing pressure. In addition, the dielectric function is in accordance with the Drude model in the pressure range of 0 GPa–35 GPa and follows the Lorentz model at 45 GPa. The LaB_6 compound exhibits better visible light transmittance performance with the increasing pressure in the range of 0 GPa–35 GPa and visible light transmittance peak would be shifted towards ultraviolet region. - Highlights: • Physical properties of LaB_6 under high pressure have been theoretically studied. • Predict an electronic topological transition occurs at 45 GPa for LaB_6. • Predict a pressure-induced charge transfer from La to B atoms. • The phonon modes at Γ point show an increasing trend with increasing pressure. • The LaB_6 exhibits better heat-shielding performance with the increasing pressure.

Structure and optical band gaps of (Ba,Sr)SnO{sub 3} films grown by molecular beam epitaxy

Energy Technology Data Exchange (ETDEWEB)

Schumann, Timo; Raghavan, Santosh; Ahadi, Kaveh; Kim, Honggyu; Stemmer, Susanne, E-mail: stemmer@mrl.ucsb.edu [Materials Department, University of California, Santa Barbara, California 93106-5050 (United States)

2016-09-15

Epitaxial growth of (Ba{sub x}Sr{sub 1−x})SnO{sub 3} films with 0 ≤ x ≤ 1 using molecular beam epitaxy is reported. It is shown that SrSnO{sub 3} films can be grown coherently strained on closely lattice and symmetry matched PrScO{sub 3} substrates. The evolution of the optical band gap as a function of composition is determined by spectroscopic ellipsometry. The direct band gap monotonously decreases with x from to 4.46 eV (x = 0) to 3.36 eV (x = 1). A large Burnstein-Moss shift is observed with La-doping of BaSnO{sub 3} films. The shift corresponds approximately to the increase in Fermi level and is consistent with the low conduction band mass.

Heat Exchange Between Electrons and Phonons in Nanosystems at Sub-Kelvin Temperatures

Directory of Open Access Journals (Sweden)

Anghel Dragoş-Victor

2018-01-01

Full Text Available Ultra-sensitive nanoscopic detectors for electromagnetic radiation consist of thin metallic films deposited on dielectric membranes. The metallic films, of thickness d of the order of 10 nm, form the thermal sensing element (TSE, which absorbs the incident radiation and measures its power flux or the energies of individual photons. To achieve the sensitivity required for astronomical observations, the TSE works at temperatures of the order of 0.1 K. The dielectric membranes are used as support and for thermal insulation of the TSE and are of thickness L − d of the order of 100 nm (L being the total thickness of the system. In such conditions, the phonon gas in the detector assumes a quasi-two-dimensional distribution, whereas quantization of the electrons wavenumbers in the direction perpendicular to the film surfaces leads to the formation of quasi two-dimensional electronic sub-bands. The heat exchange between electrons and phonons has an important contribution to the performance of the device and is dominated by the interaction between the electrons and the antisymmetric acoustic phonons.

Optical-phonon-induced frictional drag in coupled two-dimensional electron gases

DEFF Research Database (Denmark)

Hu, Ben Yu-Kuang

1998-01-01

The role of optical phonons in frictional drag between two adjacent but electrically isolated two-dimensional electron gases is investigated. Since the optical phonons in III-V materials have a considerably larger coupling to electrons than acoustic phonons (which are the dominant drag mechanism ...

Optical pumping of hot phonons in GaAs

International Nuclear Information System (INIS)

Collins, C.L.; Yu, P.Y.

1982-01-01

Optical pumping of hot LO phonons in GaAs has been studied as a function of the excitation photon frequency. The experimental results are in good agreement with a model calculation which includes both inter- and intra-valley electron-phonon scatterings. The GAMMA-L and GAMMA-X intervalley electron-phonon interactions in GaAs have been estimated

Lamb wave band gaps in a double-sided phononic plate

Science.gov (United States)

Wang, Peng; Chen, Tian-Ning; Yu, Kun-Peng; Wang, Xiao-Peng

2013-02-01

In this paper, we report on the theoretical investigation of the propagation characteristics of Lamb wave in a phononic crystal structure constituted by a square array of cylindrical stubs deposited on both sides of a thin homogeneous plate. The dispersion relations, the power transmission spectra, and the displacement fields of the eigenmodes are studied by using the finite-element method. We investigate the evolution of band gaps in the double-sided phononic plate with stub height on both sides arranged from an asymmetrical distribution to a symmetrical distribution gradually. Numerical results show that as the double stubs in a unit cell arranged more symmetrically on both sides, band width shifts, new band gaps appear, and the bands become flat due to localized resonant modes which couple with plate modes. Specially, more band gaps and flat bands can be found in the symmetrical system as a result of local resonances of the stubs which interact in a stronger way with the plate modes. Moreover, the symmetrical double-sided plate exhibits lower and smaller band gap than that of the asymmetrical plate. These propagation properties of elastic or acoustic waves in the double-sided plate can potentially be utilized to generate filters, slow the group velocity, low-frequency sound insulation, and design acoustic sensors.

On the sub-band gap optical absorption in heat treated cadmium sulphide thin film deposited on glass by chemical bath deposition technique

International Nuclear Information System (INIS)

Chattopadhyay, P.; Karim, B.; Guha Roy, S.

2013-01-01

The sub-band gap optical absorption in chemical bath deposited cadmium sulphide thin films annealed at different temperatures has been critically analyzed with special reference to Urbach relation. It has been found that the absorption co-efficient of the material in the sub-band gap region is nearly constant up to a certain critical value of the photon energy. However, as the photon energy exceeds the critical value, the absorption coefficient increases exponentially indicating the dominance of Urbach rule. The absorption coefficients in the constant absorption region and the Urbach region have been found to be sensitive to annealing temperature. A critical examination of the temperature dependence of the absorption coefficient indicates two different kinds of optical transitions to be operative in the sub-band gap region. After a careful analyses of SEM images, energy dispersive x-ray spectra, and the dc current-voltage characteristics, we conclude that the absorption spectra in the sub-band gap domain is possibly associated with optical transition processes involving deep levels and the grain boundary states of the material

On the sub-band gap optical absorption in heat treated cadmium sulphide thin film deposited on glass by chemical bath deposition technique

Science.gov (United States)

Chattopadhyay, P.; Karim, B.; Guha Roy, S.

2013-12-01

The sub-band gap optical absorption in chemical bath deposited cadmium sulphide thin films annealed at different temperatures has been critically analyzed with special reference to Urbach relation. It has been found that the absorption co-efficient of the material in the sub-band gap region is nearly constant up to a certain critical value of the photon energy. However, as the photon energy exceeds the critical value, the absorption coefficient increases exponentially indicating the dominance of Urbach rule. The absorption coefficients in the constant absorption region and the Urbach region have been found to be sensitive to annealing temperature. A critical examination of the temperature dependence of the absorption coefficient indicates two different kinds of optical transitions to be operative in the sub-band gap region. After a careful analyses of SEM images, energy dispersive x-ray spectra, and the dc current-voltage characteristics, we conclude that the absorption spectra in the sub-band gap domain is possibly associated with optical transition processes involving deep levels and the grain boundary states of the material.

Interface phonon effect on optical spectra of quantum nanostructures

International Nuclear Information System (INIS)

Maslov, Alexander Yu.; Proshina, Olga V.; Rusina, Anastasia N.

2009-01-01

This paper deals with theory of large radius polaron effect in quantum wells, wires and dots. The interaction of charge particles and excitons with both bulk and interface optical phonons is taken into consideration. The analytical expression for polaron binding energy is obtained for different types of nanostructures. It is shown that the contribution of interface phonons to the polaron binding energy may exceed the bulk phonon part. The manifestation of polaron effects in optical spectra of quantum nanostructures is discussed.

The manifestation of spin-phonon coupling in CaMnO{sub 3}

Energy Technology Data Exchange (ETDEWEB)

Goian, V., E-mail: goian@fzu.cz; Kamba, S.; Borodavka, F.; Nuzhnyy, D.; Savinov, M. [Institute of Physics, The Czech Academy of Sciences, Na Slovance 2, 182 21 Prague (Czech Republic); Belik, A. A. [International Center for Materials Nanoarchitectonics (WPI-MANA), National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan)

2015-04-28

Recently predicted presence of spin-phonon coupling in the CaMnO{sub 3} is experimentally confirmed in infrared (IR), Raman and time-domain THz spectra. Most of phonon frequencies seen below 350 cm{sup −1} exhibit significant shifts on cooling below antiferromagnetic phase transition at T{sub N} ≅ 120 K. Moreover, several new modes activate in the IR and Raman spectra on cooling below T{sub N}. Sum of phonon contributions to static permittivity exhibits small but reliable anomaly at T{sub N}. On the other hand, the spin-phonon coupling is not manifested in temperature dependence of radio-frequency permittivity, because intrinsic permittivity is screened by extrinsic contribution from conductivity, which enhances the permittivity to giant values.

Unified treatment of coupled optical and acoustic phonons in piezoelectric cubic materials

DEFF Research Database (Denmark)

Willatzen, Morten; Wang, Zhong Lin

2015-01-01

A unified treatment of coupled optical and acoustic phonons in piezoelectric cubic materials is presented whereby the lattice displacement vector and the internal ionic displacement vector are found simultaneously. It is shown that phonon couplings exist in pairs only; either between the electric...... piezoelectricity in a cubic structured material slab. First, it is shown that isolated optical phonon modes generally cannot exist in piezoelectric cubic slabs. Second, we prove that confined acousto-optical phonon modes only exist for a discrete set of in-plane wave numbers in piezoelectric cubic slabs. Third...... potential and the lattice displacement coordinate perpendicular to the phonon wave vector or between the two other lattice displacement components. The former leads to coupled acousto-optical phonons by virtue of the piezoelectric effect. We then establish three new conjectures that entirely stem from...

Strain-induced enhancement of thermoelectric performance of TiS2 monolayer based on first-principles phonon and electron band structures

Science.gov (United States)

Li, Guanpeng; Yao, Kailun; Gao, Guoying

2018-01-01

Using first-principle calculations combined with Boltzmann transport theory, we investigate the biaxial strain effect on the electronic and phonon thermal transport properties of a 1 T (CdI2-type) structural TiS2 monolayer, a recent experimental two-dimensional (2D) material. It is found that the electronic band structure can be effectively modulated and that the band gap experiences an indirect-direct-indirect transition with increasing tensile strain. The band convergence induced by the tensile strain increases the Seebeck coefficient and the power factor, while the lattice thermal conductivity is decreased under the tensile strain due to the decreasing group velocity and the increasing scattering chances between the acoustic phonon modes and the optical phonon modes, which together greatly increase the thermoelectric performance. The figure of merit can reach 0.95 (0.82) at an 8 percent tensile strain for the p-type (n-type) doping, which is much larger than that without strain. The present work suggests that the TiS2 monolayer is a good candidate for 2D thermoelectric materials, and that biaxial strain is a powerful tool with which to enhance thermoelectric performance.

Single crystalline Co{sub 3}O{sub 4}: Synthesis and optical properties

Energy Technology Data Exchange (ETDEWEB)

Hosny, Nasser Mohammed, E-mail: Nasserh56@yahoo.com

2014-04-01

Crystals of Co{sub 3}O{sub 4} have been prepared from thermal decomposition of molecular precursors derived from salicylic acid and cobalt (II) acetate or chloride at 500 °C. A cubic phase Co{sub 3}O{sub 4} micro- and nanocrystals have been obtained. The as-synthesized products were characterized by X-ray diffraction (XRD), scanning electron microscope (SEM) and transmission electron microscope (TEM). The images of electron microscopes showed octahedral crystals of Co{sub 3}O{sub 4}. The volume and polarizability of the optimized structures of molecular precursors have been calculated and related to the particle size. The optical band gap of the obtained crystals has been measured. The results indicated two optical band gaps with values 2.65 and 2.95 eV for (E{sub g1}) (E{sub g2}), respectively. - Highlights: • Synthesis of Co{sub 3}O{sub 4} nanocrystals by decomposition of cobalt salicylic acid precursor. • Characterization of the isolated nanocrystals by using XRD, SEM and HRTEM. • The optical band gap has been measured.

Characterization of band structure for transverse acoustic phonons in Fibonacci superlattices by a bandedge formalism

International Nuclear Information System (INIS)

Hsueh, W J; Chen, R F; Tang, K Y

2008-01-01

We present a divergence-free method to determine the characteristics of band structures and projected band structures of transverse acoustic phonons in Fibonacci superlattices. A set of bandedge equations is formulated to solve the band structures for the phonon instead of using the traditional dispersion relation. Numerical calculations show band structures calculated by the present method for the Fibonacci superlattice without numerical instability, which may occur in traditional methods. Based on the present formalism, the band structure for the acoustic phonons has been characterized by closure points and the projected bandgaps of the forbidden bands. The projected bandgaps are determined by the projected band structure, which is characterized by the cross points of the projected bandedges. We observed that the band structure and projected band structure and their characteristics were quite different for different generation orders and the basic layers for the Fibonacci superlattice. In this study, concise rules to determine these characteristics of the band structure and the projected band structure, including the number and the location of closure points of forbidden bands and those of projected bandgaps, in Fibonacci superlattices with arbitrary generation order and basic layers are proposed.

Electronic and optical properties of ZrB12 and YB6. Discussion on electron-phonon coupling

International Nuclear Information System (INIS)

Teyssier, J.; Kuzmenko, A.; Marel, D. van der; Lortz, R.; Junod, A.; Filippov, V.; Shitsevalova, N.

2006-01-01

We report the optical properties of high-quality single crystals of low temperature superconductors zirconiumdodecaboride ZrB 12 (T c =5.95 K) and yttrium hexaboride YB 6 (T c =7.15 K) in the range 6 meV-4.6 eV at room temperature. The experimental optical conductivity was extracted from the analysis of the reflectivity in the infrared range and ellipsometry measurement of the dielectric function in the visible range. The electronic band structure of these compounds was calculated by the self-consistent full-potential LMTO method and used to compute the interband part of the optical conductivity and the plasma frequency Ω p . A good agreement was observed between the interband part of the experimental optical conductivities and the band structure calculations. Different methods combining optical spectroscopy, resistivity, specific heat measurements and results of band structure calculations are used to determine the electron-phonon coupling constant. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Tl{sub 4}CdI{sub 6} – Wide band gap semiconductor: First principles modelling of the structural, electronic, optical and elastic properties

Energy Technology Data Exchange (ETDEWEB)

Piasecki, M., E-mail: m.piasecki@ajd.czest.pl [Institute of Physics, Jan Dlugosz University, Armii Krajowej 13/15, 42-200 Czestochowa (Poland); Brik, M.G. [College of Sciences, Chongqing University of Posts and Telecommunications, Chongqing 400065 (China); Institute of Physics, University of Tartu, Ravila 14C, Tartu 50411 (Estonia); Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw (Poland); Kityk, I.V. [Faculty of Electrical Engineering, Czestochowa University of Technology, Armii Krajowej 17, 42-200 Czestochowa (Poland)

2015-08-01

A novel infrared optoelectronic material Tl{sub 4}CdI{sub 6} was studied using the density functional theory (DFT)-based techniques. Its structural, electronic, optical and elastic properties were all calculated in the generalized gradient approximation (GGA) with the Perdew–Burke–Ernzerhof (PBE) and the local density approximation (LDA) with the Ceperley-Alder–Perdew-Zunger (CA–PZ) functionals. The studied material is a direct band gap semiconductor with the calculated band gaps of 2.043 eV (GGA) and 1.627 eV (LDA). The wavelength dependence of the refractive index was fitted to the Sellmeier equation in the spectral range from 400 to 2000 nm. Good agreement between the GGA-calculated values of refractive index and experimental data was achieved. To the best of our knowledge, this is the first consistent theoretical description of the title compound, which includes calculations and analysis of the structural, electronic, optical and elastic properties. - Graphical abstract: Display Omitted - Highlights: • Infrared optoelectronic material Tl{sub 4}CdI{sub 6} was studied using ab initio methods. • Structural, electronic, optical and elastic properties were calculated. • Independent components of the elastic constants tensor were calculated. • Good agreement with available experimental results was achieved.

Optical and vibrational properties of (ZnO){sub k} In{sub 2}O{sub 3} natural superlattice nanostructures

Energy Technology Data Exchange (ETDEWEB)

Margueron, Samuel [Laboratoire Matériaux Optiques, Photonique et Systèmes, Université de Lorraine et CentraleSupélec, 57070 Metz (France); John A. Paulson School of Engineering and Applied Sciences, Harvard University, Cambridge, Maryland 02138 (United States); Pokorny, Jan; Skiadopoulou, Stella; Kamba, Stanislav [Institute of Physics, Czech Academy of Sciences, Na Slovance 2, 182 21 Prague 8 (Czech Republic); Liang, Xin [School of Materials Science and Engineering, Changzhou University, Changzhou, Jiangsu Province 213164 (China); Clarke, David R. [John A. Paulson School of Engineering and Applied Sciences, Harvard University, Cambridge, Maryland 02138 (United States)

2016-05-21

A thermodynamically stable series of superlattices, (ZnO){sub k}In{sub 2}O{sub 3}, form in the ZnO-In{sub 2}O{sub 3} binary oxide system for InO{sub 1.5} concentrations from about 13 up to about 33 mole percent (m/o). These natural superlattices, which consist of a periodic stacking of single, two-dimensional sheets of InO{sub 6} octahedra, are found to give rise to systematic changes in the optical and vibrational properties of the superlattices. Low-frequency Raman scattering provides the evidence for the activation of acoustic phonons due to the folding of Brillouin zone. New vibrational modes at 520 and 620 cm{sup −1}, not present in either ZnO or In{sub 2}O{sub 3}, become Raman active. These new modes are attributed to collective plasmon oscillations localized at the two-dimensional InO{sub 1.5} sheets. Infrared reflectivity experiments, and simulations taking into account a negative dielectric susceptibility due to electron carriers in ZnO and interface modes of the dielectric layer of InO{sub 2}, explain the occurrence of these new modes. We postulate that a localized electron gas forms at the ZnO/InO{sub 2} interface due to the electron band alignment and polarization effects. All our observations suggest that there are quantum contributions to the thermal and electrical conductivity in these natural superlattices.

Photoluminescence and optical absorption spectra of {gamma}{sub 1}-(Ga{sub x}In{sub 1-x}){sub 2}Se{sub 3} mixed crystals

Energy Technology Data Exchange (ETDEWEB)

Kranjcec, M. [Department of Geotechnics, University of Zagreb, 7 Hallerova Aleja, Varazdin, 42000 (Croatia); Ruder Boskovic Institute, 54 Bijenicka Cesta, Zagreb, 10000 (Croatia); Studenyak, I.P. [Uzhhorod National University, 46 Pidhirna Str., Uzhhorod, 88000 (Ukraine); Azhniuk, Yu. M. [Institute of Electron Physics, Ukr. Nat. Acad. Sci., 21 Universytetska Str., Uzhhorod, 88000 (Ukraine)

2005-08-01

Temperature and compositional studies of photoluminescence and optical absorption edge spectra of {gamma}{sub 1}-(Ga{sub x}In{sub 1-x}){sub 2}Se{sub 3} mixed crystals with x=0.1-0.4 are performed. Exciton and impurity-related photoluminescence bands are revealed at low temperatures and Urbach shape of the absorption edge is observed in the temperature range 77-300 K. Temperature and compositional dependences of the photoluminescence band spectral positions and halfwidths as well as optical pseudogap and absorption edge energy width are investigated. Mechanisms of radiative recombination and optical absorption as well as crystal lattice disordering processes in {gamma}{sub 1}-(Ga{sub x}In{sub 1-x}){sub 2}Se{sub 3} solid solutions are studied. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Zero-phonon line and fine structure of the yellow luminescence band in GaN

Science.gov (United States)

Reshchikov, M. A.; McNamara, J. D.; Zhang, F.; Monavarian, M.; Usikov, A.; Helava, H.; Makarov, Yu.; Morkoç, H.

2016-07-01

The yellow luminescence band was studied in undoped and Si-doped GaN samples by steady-state and time-resolved photoluminescence. At low temperature (18 K), the zero-phonon line (ZPL) for the yellow band is observed at 2.57 eV and attributed to electron transitions from a shallow donor to a deep-level defect. At higher temperatures, the ZPL at 2.59 eV emerges, which is attributed to electron transitions from the conduction band to the same defect. In addition to the ZPL, a set of phonon replicas is observed, which is caused by the emission of phonons with energies of 39.5 meV and 91.5 meV. The defect is called the YL1 center. The possible identity of the YL1 center is discussed. The results indicate that the same defect is responsible for the strong YL1 band in undoped and Si-doped GaN samples.

Anisotropic lattice expansion of three-dimensional colloidal crystals and its impact on hypersonic phonon band gaps.

Science.gov (United States)

Wu, Songtao; Zhu, Gaohua; Zhang, Jin S; Banerjee, Debasish; Bass, Jay D; Ling, Chen; Yano, Kazuhisa

2014-05-21

We report anisotropic expansion of self-assembled colloidal polystyrene-poly(dimethylsiloxane) crystals and its impact on the phonon band structure at hypersonic frequencies. The structural expansion was achieved by a multistep infiltration-polymerization process. Such a process expands the interplanar lattice distance 17% after 8 cycles whereas the in-plane distance remains unaffected. The variation of hypersonic phonon band structure induced by the anisotropic lattice expansion was recorded by Brillouin measurements. In the sample before expansion, a phononic band gap between 3.7 and 4.4 GHz is observed; after 17% structural expansion, the gap is shifted to a lower frequency between 3.5 and 4.0 GHz. This study offers a facile approach to control the macroscopic structure of colloidal crystals with great potential in designing tunable phononic devices.

Reducing support loss in micromechanical ring resonators using phononic band-gap structures

Energy Technology Data Exchange (ETDEWEB)

Hsu, Feng-Chia; Huang, Tsun-Che; Wang, Chin-Hung; Chang, Pin [Industrial Technology Research Institute-South, Tainan 709, Taiwan (China); Hsu, Jin-Chen, E-mail: fengchiahsu@itri.org.t, E-mail: hsujc@yuntech.edu.t [Department of Mechanical Engineering, National Yunlin University of Science and Technology, Douliou, Yunlin 64002, Taiwan (China)

2011-09-21

In micromechanical resonators, energy loss via supports into the substrates may lead to a low quality factor. To eliminate the support loss, in this paper a phononic band-gap structure is employed. We demonstrate a design of phononic-crystal (PC) strips used to support extensional wine-glass mode ring resonators to increase the quality factor. The PC strips are introduced to stop elastic-wave propagation by the band-gap and deaf-band effects. Analyses of resonant characteristics of the ring resonators and the dispersion relations, eigenmodes, and transmission properties of the PC strips are presented. With the proposed resonator architecture, the finite-element simulations show that the leaky power is effectively reduced and the stored energy inside the resonators is enhanced simultaneously as the operating frequencies of the resonators are within the band gap or deaf bands. Realization of a high quality factor micromechanical ring resonator with minimized support loss is expected.

Reducing support loss in micromechanical ring resonators using phononic band-gap structures

International Nuclear Information System (INIS)

Hsu, Feng-Chia; Huang, Tsun-Che; Wang, Chin-Hung; Chang, Pin; Hsu, Jin-Chen

2011-01-01

In micromechanical resonators, energy loss via supports into the substrates may lead to a low quality factor. To eliminate the support loss, in this paper a phononic band-gap structure is employed. We demonstrate a design of phononic-crystal (PC) strips used to support extensional wine-glass mode ring resonators to increase the quality factor. The PC strips are introduced to stop elastic-wave propagation by the band-gap and deaf-band effects. Analyses of resonant characteristics of the ring resonators and the dispersion relations, eigenmodes, and transmission properties of the PC strips are presented. With the proposed resonator architecture, the finite-element simulations show that the leaky power is effectively reduced and the stored energy inside the resonators is enhanced simultaneously as the operating frequencies of the resonators are within the band gap or deaf bands. Realization of a high quality factor micromechanical ring resonator with minimized support loss is expected.

Giant magnetorefractive effect in La{sub 0.7}Ca{sub 0.3}MnO{sub 3} films

Energy Technology Data Exchange (ETDEWEB)

Granovskii, A. B., E-mail: granov@magn.ru [Moscow State University (Russian Federation); Sukhorukov, Yu. P., E-mail: suhorukov@imp.uran.ru; Telegin, A. V.; Bessonov, V. D. [Russian Academy of Sciences, Institute of Metal Physics, Ural Branch (Russian Federation); Gan' shina, E. A.; Kaul' , A. R.; Korsakov, I. E.; Gorbenko, O. Yu. [Moscow State University (Russian Federation); Gonzalez, J. [Universidad del Pais Vasco, Departamento Fisica de Materiales, Facultad de Quimica (Spain)

2011-01-15

Complex experimental investigations of the structural, optical, and magneto-optical properties (magnetotransmission, magnetoreflection, and transversal Kerr effect, as well as the magnetoresistance, of La{sub 0.7}Ca{sub 0.3}MnO{sub 3} epitaxial films indicate that magnetoreflection and magnetotransmission in manganite films can reach giant values and depend strongly on the magnetic and charge homogeneity of the films, their thickness, and spectral range under investigation. It has been shown that the optical enhancement of the magnetorefractive effect occurs in thin films as compared to manganite crystals. In the region of the minimum of the reflectance near the first phonon band, the resonance-like magnetorefractive effect has been observed, which is accompanied by change of the sign of the magnetoreflection. A model based on the theory of the magnetorefractive effect has been proposed to qualitatively explain this behavior.

Research on low-frequency band gap property of a hybrid phononic crystal

Science.gov (United States)

Dong, Yake; Yao, Hong; Du, Jun; Zhao, Jingbo; Chao, Ding; Wang, Benchi

2018-05-01

A hybrid phononic crystal has been investigated. The characteristic frequency of XY mode, transmission loss and displacement vector have been calculated by the finite element method. There are Bragg scattering band gap and local resonance band gap in the band structures. We studied the influence factors of band gap. There are many flat bands in the eigenfrequencies curve. There are many flat bands in the curve. The band gap covers a large range in low frequency. The band gaps cover more than 95% below 3000 Hz.

Optical phonons in PbTe/CdTe multilayer heterostructures

Energy Technology Data Exchange (ETDEWEB)

Novikova, N. N.; Yakovlev, V. A. [Russian Academy of Sciences, Institute for Spectroscopy (Russian Federation); Kucherenko, I. V., E-mail: kucheren@sci.lebedev.ru [Russian Academy of Sciences, Lebedev Physical Institute (Russian Federation); Karczewski, G. [Polish Academy of Sciences, Institute of Physics (Poland); Aleshchenko, Yu. A.; Muratov, A. V.; Zavaritskaya, T. N.; Melnik, N. N. [Russian Academy of Sciences, Lebedev Physical Institute (Russian Federation)

2015-05-15

The infrared reflection spectra of PbTe/CdTe multilayer nanostructures grown by molecular-beam epitaxy are measured in the frequency range of 20–5000 cm{sup −1} at room temperature. The thicknesses and high-frequency dielectric constants of the PbTe and CdTe layers and the frequencies of the transverse optical (TO) phonons in these structures are determined from dispersion analysis of the spectra. It is found that the samples under study are characterized by two TO phonon frequencies, equal to 28 and 47 cm{sup −1}. The first frequency is close to that of TO phonons in bulk PbTe, and the second is assigned to the optical mode in structurally distorted interface layers. The Raman-scattering spectra upon excitation with the radiation of an Ar{sup +} laser at 514.5 nm are measured at room and liquid-nitrogen temperatures. The weak line at 106 cm{sup −1} observed in these spectra is attributed to longitudinal optical phonons in the interface layers.

Optical transition energy of magneto-polaron in a GaAs{sub 0.9}P{sub 0.1}/GaAs{sub 0.6}P{sub 0.4} quantum dot

Energy Technology Data Exchange (ETDEWEB)

Vinolin, Ada [Dept. of Physics, Madurai Kamaraj University College, Alagarkoil Road, Madurai-625002. India (India); Peter, A. John, E-mail: a.john.peter@gmail.com [Dept. of Physics, Govt. Arts College, Melur-625106. Madurai. India (India)

2015-06-24

Magneto-LO-polaron in a cylindrical GaAs{sub 0.9} P{sub 0.1} / GaAs{sub 0.6} P{sub 0.4} quantum dot is investigated taking into consideration of geometrical confinement effect. The effects of phonon on the exciton binding energy and the interband emission energy as a function of dot radius are found. The calculations are performed within the single band effective mass approximation using the variational method based on the Lee-Low-Pine LLP transformation.

Towards phonon photonics: scattering-type near-field optical microscopy reveals phonon-enhanced near-field interaction

International Nuclear Information System (INIS)

Hillenbrand, Rainer

2004-01-01

Diffraction limits the spatial resolution in classical microscopy or the dimensions of optical circuits to about half the illumination wavelength. Scanning near-field microscopy can overcome this limitation by exploiting the evanescent near fields existing close to any illuminated object. We use a scattering-type near-field optical microscope (s-SNOM) that uses the illuminated metal tip of an atomic force microscope (AFM) to act as scattering near-field probe. The presented images are direct evidence that the s-SNOM enables optical imaging at a spatial resolution on a 10 nm scale, independent of the wavelength used (λ=633 nm and 10 μm). Operating the microscope at specific mid-infrared frequencies we found a tip-induced phonon-polariton resonance on flat polar crystals such as SiC and Si 3 N 4 . Being a spectral fingerprint of any polar material such phonon-enhanced near-field interaction has enormous applicability in nondestructive, material-specific infrared microscopy at nanoscale resolution. The potential of s-SNOM to study eigenfields of surface polaritons in nanostructures opens the door to the development of phonon photonics--a proposed infrared nanotechnology that uses localized or propagating surface phonon polaritons for probing, manipulating and guiding infrared light in nanoscale devices, analogous to plasmon photonics

Strongly correlated quasi-one-dimensional bands: Ground states, optical absorption, and phonons

International Nuclear Information System (INIS)

Campbell, D.K.; Gammel, J.T.; Loh, E.Y. Jr.

1989-01-01

Using the Lanczos method for exact diagonalization on systems up to 14 sites, combined with a novel ''phase randomization'' technique for extracting more information from these small systems, we investigate several aspects of the one-dimensional Peierls-Hubbard Hamiltonian, in the context of trans-polyacetylene: the dependence of the ground state dimerization on the strength of the electron-electron interactions, including the effects of ''off-diagonal'' Coulomb terms generally ignored in the Hubbard model; the phonon vibrational frequencies and dispersion relations, and the optical absorption properties, including the spectrum of absorptions as a function of photon energy. These three different observables provide considerable insight into the effects of electron-electron interactions on the properties of real materials and thus into the nature of strongly correlated electron systems. 29 refs., 11 figs

Lattice parameters and Raman-active phonon modes of β-(Al{sub x}Ga{sub 1−x}){sub 2}O{sub 3}

Energy Technology Data Exchange (ETDEWEB)

Kranert, Christian, E-mail: christian.kranert@uni-leipzig.de; Jenderka, Marcus; Lenzner, Jörg; Lorenz, Michael; Wenckstern, Holger von; Schmidt-Grund, Rüdiger; Grundmann, Marius [Institut für Experimentelle Physik II, Universität Leipzig, Halbleiterphysik, Linnéstr. 5, 04103 Leipzig (Germany)

2015-03-28

We present X-ray diffraction and Raman spectroscopy investigations of a (100)-oriented (Al{sub x}Ga{sub 1–x}){sub 2}O{sub 3} thin film on MgO (100) and bulk-like ceramics in dependence on their composition. The thin film grown by pulsed laser deposition has a continuous lateral composition spread allowing to determine precisely the dependence of the phonon mode properties and lattice parameters on the chemical composition. For x < 0.4, we observe the single-phase β-modification. Its lattice parameters and phonon energies depend linearly on the composition. We determined the slopes of these dependencies for the individual lattice parameters and for nine Raman lines, respectively. While the lattice parameters of the ceramics follow Vegard's rule, deviations are observed for the thin film. This deviation has only a small effect on the phonon energies, which show a reasonably good agreement between thin film and ceramics.

Optical spectroscopy of Ce{sup 3+} in BaLiF{sub 3}

Energy Technology Data Exchange (ETDEWEB)

Yamaga, M.; Imai, T. [Department of Electrical and Electronic Engineering, Faculty of Engineering, Gifu University, Gifu 501-1193 (Japan); Shimamura, K.; Fukuda, T. [Institute for Materials Research, Tohoku University, Sendai 980-8577 (Japan); Honda, M. [Faculty of Science, Naruto University of Education, Naruto 772-8502 (Japan)

2000-04-10

The optical absorption spectrum of Ce{sup 3+} in BaLiF{sub 3} crystals consists of several overlapping broad bands. The Ce{sup 3+} luminescence shows broad bands due to moderate electron-phonon interaction in the 5d excited state. Three distinct Ce{sup 3+} sites in the crystal were assigned from the optical spectra. The luminescence spectrum from the dominant Ce{sup 3+} site has a large Stokes shift ({approx}8300 cm{sup -1}), whereas that from one of the two minor Ce{sup 3+} sites has a Stokes shift of half that magnitude ({approx}4400 cm{sup -1}), assuming that the excitation spectrum is almost the same as for the dominant site. The peaks of the lowest-energy absorption and luminescence bands for the other minor Ce{sup 3+} site are shifted to lower energy, and the Stokes shift energy ({approx}7800 cm{sup -1}) is close to that for the dominant site. These three Ce{sup 3+} sites are assigned to configurations of Ce{sup 3+} accompanied by different charge compensators. This assignment is consistent with preliminary electron spin-resonance results indicating that there exist two tetragonal and two orthorhombic Ce{sup 3+} centres in the absence of the cubic centre. (author)

Study of structural and optical properties of Cd{sub 1-x}Zn{sub x}Se thin films

Energy Technology Data Exchange (ETDEWEB)

Wahab, L.A., E-mail: aly_lo2003@yahoo.com [National Center for Radiation Research and Technology, Nasr City, Cairo (Egypt); Zayed, H.A. [University Collage of Women for Art, Science and Education, Ain Shams University, Cairo (Egypt); El-Galil, A.A. Abd [National Center for Radiation Research and Technology, Nasr City, Cairo (Egypt)

2012-06-01

Cd{sub 1-x}Zn{sub x}Se (x = 0, 0.5 and 1) thin films have been deposited onto glass substrates using thermal evaporation technique. The lattice constants, grain size, microstrain and dislocation density were studied by using X-ray diffraction. In addition the optical constants were calculated in the wavelength range 400-2500 nm. Transmittance and reflectance were used to calculate the absorption coefficient {alpha} and the optical band gap E{sub g}. The linear relation of ({alpha}h{upsilon}){sup 2} as a function of photon energy h{upsilon} for the thin films illustrated that the films exhibit a direct band gap, which increases with increasing Zn content. This increasing of optical band gap was interpreted in accordance to the increasing in the cohesive energy. Optical constants, such as refractive index n, optical conductivity {sigma}{sub opt}, complex dielectric constant, relaxation time {tau} and dissipation factor tan{delta} were determined. The optical dispersion parameters E{sub 0}, E{sub d} were determined according to Wemple and Di Domenico method. - Highlights: Black-Right-Pointing-Pointer ZnSe thin film has cubic zinc blende structure while CdSe and Cd{sub 0.5}Zn{sub 0.5}Se thin films have hexagonal structure. Black-Right-Pointing-Pointer Grain size of Cd{sub 1-x}Zn{sub x}Se decreases with increasing x (x = 0, 0.5 and 1). Black-Right-Pointing-Pointer Optical band gap increases with increasing x.

Infrared-active optical phonons in LiFePO4 single crystals

Science.gov (United States)

Stanislavchuk, T. N.; Middlemiss, D. S.; Syzdek, J. S.; Janssen, Y.; Basistyy, R.; Sirenko, A. A.; Khalifah, P. G.; Grey, C. P.; Kostecki, R.

2017-07-01

Infrared-active optical phonons were studied in olivine LiFePO4 oriented single crystals by means of both rotating analyzer and rotating compensator spectroscopic ellipsometry in the spectral range between 50 and 1400 cm-1. The eigenfrequencies, oscillator strengths, and broadenings of the phonon modes were determined from fits of the anisotropic harmonic oscillator model to the data. Optical phonons in a heterosite FePO4 crystal were measured from the delithiated ab-surface of the LiFePO4 crystal and compared with the phonon modes of the latter. Good agreement was found between experimental data and the results of solid-state hybrid density functional theory calculations for the phonon modes in both LiFePO4 and FePO4.

Banded all-optical OFDM super-channels with low-bandwidth receivers.

Science.gov (United States)

Song, Binhuang; Zhu, Chen; Corcoran, Bill; Zhuang, Leimeng; Lowery, Arthur James

2016-08-08

We propose a banded all-optical orthogonal frequency division multiplexing (AO-OFDM) transmission system based on synthesising a number of truncated sinc-shaped subcarriers for each sub-band. This approach enables sub-band by sub-band reception and therefore each receiver's electrical bandwidth can be significantly reduced compared with a conventional AO-OFDM system. As a proof-of-concept experiment, we synthesise 6 × 10-Gbaud subcarriers in both conventional and banded AO-OFDM systems. With a limited receiver electrical bandwidth, the experimental banded AO-OFDM system shows 2-dB optical signal to noise ratio (OSNR) benefit over conventional AO-OFDM at the 7%-overhead forward error correction (FEC) threshold. After transmission over 800-km of single-mode fiber, ≈3-dB improvement in Q-factor can be achieved at the optimal launch power at a cost of increasing the spectral width by 14%.

Optical properties of the Na{sub 2}O-B{sub 2}O{sub 3}-Bi{sub 2}O{sub 3}-MoO{sub 3} glasses

Energy Technology Data Exchange (ETDEWEB)

Saddeek, Yasser B. [Physics Department, Faculty of Science, Al-Azhar University, P.O. 71452, Assiut (Egypt); Aly, K.A., E-mail: kamalaly2001@gmail.co [Physics Department, Faculty of Science, Al-Azhar University, P.O. 71452, Assiut (Egypt); Dahshan, A., E-mail: adahshan73@gmail.co [Department of Physics, Faculty of Science, Suez Canal University, Port Said (Egypt); Kashef, I.M.El. [Department of Physics, Faculty of Education, Suez Canal University, Al Arish (Egypt)

2010-04-02

Glasses with compositions (100 - x)Na{sub 2}B{sub 4}O{sub 7}-0.5Bi{sub 2}O{sub 3}-0.5MoO{sub 3}, with 0 {<=} x {<=} 40 mol% have been prepared using the melt quenching technique. The optical transmittance and reflectance spectrum of the glasses have been recorded in the wavelength range 300-1100 nm. The values of the optical band gap E{sub g}{sup opt} for indirect transition and refractive index have been determined for 0 {<=} x {<=} 40 mol%. The average electronic polarizability of the oxide ion {alpha}{sub O{sup 2-}} and the optical basicity have been estimated from the calculated values of the refractive indices. The variations in the different physical parameters such as the optical band gap, the refractive index, the average electronic polarizability of the oxide ion and the optical basicity with Bi{sub 2}O{sub 3} and MoO{sub 3} content have been analyzed and discussed in terms of the changes in the glass structure. The results are interpreted in terms of the increase in the number of non-bridging oxygen atoms, substitution of longer bond-lengths of Bi-O, and Mo-O in place of shorter B-O bond and the change in Na{sup +} ion concentration.

Modelling exciton–phonon interactions in optically driven quantum dots

DEFF Research Database (Denmark)

Nazir, Ahsan; McCutcheon, Dara

2016-01-01

We provide a self-contained review of master equation approaches to modelling phonon effects in optically driven self-assembled quantum dots. Coupling of the (quasi) two-level excitonic system to phonons leads to dissipation and dephasing, the rates of which depend on the excitation conditions...

Electronic band structure, optical, dynamical and thermodynamic properties of cesium chloride (CsCl from first-principles

Directory of Open Access Journals (Sweden)

Bingol Suat

2015-01-01

Full Text Available The geometric structural optimization, electronic band structure, total density of states for valence electrons, density of states for phonons, optical, dynamical, and thermodynamical features of cesium chloride have been investigated by linearized augmented plane wave method using the density functional theory under the generalized gradient approximation. Ground state properties of cesium chloride are studied. The calculated ground state properties are consistent with experimental results. Calculated band structure indicates that the cesium chloride structure has an indirect band gap value of 5.46 eV and is an insulator. From the obtained phonon spectra, the cesium chloride structure is dynamically stable along the various directions in the Brillouin zone. Temperature dependent thermodynamic properties are studied using the harmonic approximation model.

Determination of optical constant and dispersion parameters of Se{sub 75}Sb{sub 10}In{sub 15} thin film characterized by wide band gap

Energy Technology Data Exchange (ETDEWEB)

Abd-Elrahman, M.I.; Abu-Sehly, A.A.; El-sonbaty, Sherouk Sh.; Hafiz, M.M. [Assiut University, Physics Department, Faculty of Science, Assiut (Egypt)

2017-02-15

Chalcogenide Se{sub 75}Sb{sub 10}In{sub 15} thin films of different thickness (50-300 nm) are deposited using thermal evaporation technique. The thermogram of the chalcogenide bulk Se{sub 75}Sb{sub 10}In{sub 15} is obtained using a differential scanning calorimetry (DSC). The crystallization temperature T{sub c}, peak crystallization temperature T{sub p} and melting temperature T{sub m}, are identified. The X-ray diffraction (XRD) examination indicates the crystallinity of the as-deposited film decreases with increasing of thickness. Optical transmission and reflection spectra are recorded in the wavelength range of the incident photons from 250 to 2500 nm. It is found that the film thickness affects the absorption coefficient, refractive index, extinction coefficient and the width of the tails of localized states in the gap region. The absorption mechanism of the as-deposited films is a direct allowed transition. The optical band gap energy (E{sub g}) decreases from 3.31 to 2.51 eV with increasing the film thickness from 50 to 300 nm. The behavior of E{sub g} is explained on the basis of the structure disorders in the thicker films. The effect of the film thickness on the single-oscillator and dispersion energies is studied by the dispersion analyses of the refractive index. (orig.)

Phonons and magnetic excitation correlations in weak ferromagnetic YCrO{sub 3}

Energy Technology Data Exchange (ETDEWEB)

Sharma, Yogesh; Sahoo, Satyaprakash, E-mail: satya504@gmail.com, E-mail: guptaraj@iitk.ac.in, E-mail: rkatiyar@hpcf.upr.edu; Perez, William; Katiyar, Ram S., E-mail: satya504@gmail.com, E-mail: guptaraj@iitk.ac.in, E-mail: rkatiyar@hpcf.upr.edu [Department of Physics, University of Puerto Rico, Puerto Rico 00936-8377 (United States); Mukherjee, Somdutta [Department of Physics, Indian Institute of Technology, Kanpur (India); Gupta, Rajeev, E-mail: satya504@gmail.com, E-mail: guptaraj@iitk.ac.in, E-mail: rkatiyar@hpcf.upr.edu [Department of Physics, Indian Institute of Technology, Kanpur (India); Department of Materials Science Programme, Indian Institute of Technology, Kanpur (India); Garg, Ashish [Department of Materials Science and Engineering, Indian Institute of Technology, Kanpur (India); Chatterjee, Ratnamala [Department of Physics, Indian Institute of Technology, Delhi (India)

2014-05-14

Here, we report the temperature dependent Raman spectroscopic studies on orthorhombically distorted perovskite YCrO{sub 3} over a temperature range of 20–300 K. Temperature dependence of DC-magnetization measurements under field cooled and zero field cooled protocols confirmed a Néel transition at T{sub N} ∼ 142 K. Magnetization isotherms recorded at 125 K show a clear loop opening without any magnetization saturation up to 20 kOe, indicating a coexistence of antiferromagnetic (AFM) and weak ferromagnetic (WFM) phases. Estimation of exchange constants using mean-field approximation further confirm the presence of a complex magnetic phase below T{sub N}. Temperature evolution of Raman line-shape parameters of the selected modes (associated with the octahedral rotation and A(Y)-shift in the unit-cell) reveal an anomalous phonon shift near T{sub N}. An additional phonon anomaly was identified at T{sup *} ∼ 60 K, which could possibly be attributed to the change in the spin dynamics. Moreover, the positive and negative shifts in Raman frequencies between T{sub N} and T{sup *} suggest competing WFM and AFM interactions. A close match between the phonon frequency of B{sub 3g} (3)-octahedral rotation mode with the square of sublattice magnetization between T{sub N} and T{sup *} is indicative of the presence of spin-phonon coupling in multiferroic YCrO{sub 3}.

Screening-induced surface polar optical phonon scattering in dual-gated graphene field effect transistors

Energy Technology Data Exchange (ETDEWEB)

Hu, Bo, E-mail: hubo2011@semi.ac.cn

2015-03-15

The effect of surface polar optical phonons (SOs) from the dielectric layers on electron mobility in dual-gated graphene field effect transistors (GFETs) is studied theoretically. By taking into account SO scattering of electron as a main scattering mechanism, the electron mobility is calculated by the iterative solution of Boltzmann transport equation. In treating scattering with the SO modes, the dynamic dielectric screening is included and compared to the static dielectric screening and the dielectric screening in the static limit. It is found that the dynamic dielectric screening effect plays an important role in the range of low net carrier density. More importantly, in-plane acoustic phonon scattering and charged impurity scattering are also included in the total mobility for SiO{sub 2}-supported GFETs with various high-κ top-gate dielectric layers considered. The calculated total mobility results suggest both Al{sub 2}O{sub 3} and AlN are the promising candidate dielectric layers for the enhancement in room temperature mobility of graphene in the future.

Infrared optical responses of wurtzite In{sub x}Ga{sub 1−x}N thin films with porous surface morphology

Energy Technology Data Exchange (ETDEWEB)

Yew, P., E-mail: paulinevcu@hotmail.com [Institute of Nano-Optoelectronics Research and Technology (INOR), Universiti Sains Malaysia, 11800 Minden, Penang (Malaysia); School of Physics, Universiti Sains Malaysia, 11800 Minden, Penang (Malaysia); Lee, S.C. [School of Physics, Universiti Sains Malaysia, 11800 Minden, Penang (Malaysia); Centre of Excellence for Pre-University Studies, INTI International College Penang, Laureate International University, 1-Z, Lebuh Bukit Jambul, 11900 Penang (Malaysia); Ng, S.S. [Institute of Nano-Optoelectronics Research and Technology (INOR), Universiti Sains Malaysia, 11800 Minden, Penang (Malaysia); Hassan, H. Abu [School of Physics, Universiti Sains Malaysia, 11800 Minden, Penang (Malaysia); Chen, W.L. [Department of Electronic Engineering, National Changhua University of Education, 500, Taiwan, ROC (China); Osipowicz, T.; Ren, M.Q. [Centre for Ion Beam Applications (CIBA), Department of Physics, National University of Singapore, Singapore 119260 (Singapore)

2016-03-31

Room temperature infrared (IR) optical responses of wurtzite indium gallium nitride (In{sub x}Ga{sub 1−x}N) in the composition range of 0.174 ≤ x ≤ 0.883 were investigated by the polarized IR reflectance spectroscopy. Analyses of the amplitudes of oscillation fringes in the non-reststrahlen region revealed that the high frequency dielectric constants of the samples were unusually smaller than the values predicted from the Clausius–Mossotti relation. This odd behavior was attributed to the porous surface morphology of the In{sub x}Ga{sub 1−x}N samples. The E{sub 1} optical phonon modes of the In{sub x}Ga{sub 1−x}N were deduced from the composition dependent reststrahlen features. The obtained values were compared to those calculated through the modified random element iso-displacement (MREI) model. The deviation between the measured data and the MREI model prediction were explained in detail from the aspects of strain, thermal expansion and anharmonic phonon-coupling. Finally, it was found that the large discrepancy of the E{sub 1}(LO) mode is mainly attributed to the effects of the longitudinal phonon–plasmon coupling. - Highlights: • Composition dependence of E{sub 1} modes of In{sub x}Ga{sub 1−x}N alloys (x = 0.174 to 0.883) • Dependence of porous morphology on infrared (IR) optical properties • Longitudinal phonon–plasmon coupling obscures determination of E{sub 1}(LO) mode.

Band structures of phononic crystal composed of lattices with different periodic constants

International Nuclear Information System (INIS)

Hu, Jia-Guang; Xu, Wen

2014-01-01

With a square lattice mercury and water system being as the model, the band structures of nesting and compound phononic crystals with two different lattice constants were investigated using the method of the supercell plane wave expansion. It was observed that large band gaps can be achieved in low frequency regions by adjusting one of the lattice constants. Meanwhile, effects similar to interstitial impurity defects can be achieved with the increase of lattice constant of the phononic crystal. The corresponding defect modes can be stimulated in band gaps. The larger the lattice constant, the stronger the localization effect of defect modes on the wave. In addition, the change of the filling fraction of impurity exerts great influence on the frequency and localization of defect modes. Furthermore, the change of the position of impurity has notable influence on the frequency of defect modes and their localization. However, the geometry structure and orientation of impurity have little effect on the frequency of defect modes and their localization in the band gap.

Strain effects on the optical conductivity of gapped graphene in the presence of Holstein phonons beyond the Dirac cone approximation

Energy Technology Data Exchange (ETDEWEB)

Yarmohammadi, Mohsen, E-mail: m.yarmohammadi69@gmail.com [Young Researchers and Elite Club, Kermanshah Branch, Islamic Azad University, Kermanshah (Iran, Islamic Republic of)

2016-08-15

In this paper we study the optical conductivity and density of states (DOS) of doped gapped graphene beyond the Dirac cone approximation in the presence of electron-phonon (e-ph) interaction under strain, i.e., within the framework of a full π-band Holstein model, by using the Kubo linear response formalism that is established upon the retarded self-energy. A new peak in the optical conductivity for a large enough e-ph interaction strength is found which is associated to transitions between the midgap states and the Van Hove singularities of the main π-band. Optical conductivity decreases with strain and at large strains, the system has a zero optical conductivity at low energies due to optically inter-band excitations through the limit of zero doping. As a result, the Drude weight changes with e-ph interaction, temperature and strain. Consequently, DOS and optical conductivity remains stable with temperature at low e-ph coupling strengths.

The Van der Waals-force-induced phononic band gap and resonant scattering in two-nanosphere aggregate

International Nuclear Information System (INIS)

Wu Jiuhui; Zhang Siwen; Zhou Kejiang

2012-01-01

A physical mechanism of phononic band gap and resonant nanoacoustic scattering in an aggregate of two elastic nanospheres is presented in this paper. By considering the Van der Waals (VdW) force between two nanospheres illuminated by nanoacoustic wave, phononic band gap and frequency shift at the lower frequency side, and largely enhanced nanoacoustic scattering at the other frequency range have been found through calculating the form function of the acoustic scattering from the nanosystem. This VdW-force-induced band gap is different from the known mechanisms of Bragg scattering and local resonances for periodic media. It is shown that when the separation distance between two nanospheres is decreasing from 20 to 1 nm, due to the increasing VdW force, the nanoacoustic scattering is much heightened by two order of magnitude, and meanwhile the frequency shift and phononic band gap at the low frequencies are both widened. These results could provide potential applications of nanoacoustic devices.

Quantum Theory of Conditional Phonon States in a Dual-Pumped Raman Optical Frequency Comb

Science.gov (United States)

Mondloch, Erin

In this work, we theoretically and numerically investigate nonclassical phonon states created in the collective vibration of a Raman medium by the generation of a dual-pumped Raman optical frequency comb in an optical cavity. This frequency comb is generated by cascaded Raman scattering driven by two phase-locked pump lasers that are separated in frequency by three times the Raman phonon frequency. We characterize the variety of conditioned phonon states that are created when the number of photons in all optical frequency modes except the pump modes are measured. Almost all of these conditioned phonon states are extremely well approximated as three-phonon-squeezed states or Schrodinger-cat states, depending on the outcomes of the photon number measurements. We show how the combinations of first-, second-, and third-order Raman scattering that correspond to each set of measured photon numbers determine the fidelity of the conditioned phonon state with model three-phonon-squeezed states and Schrodinger-cat states. All of the conditioned phonon states demonstrate preferential growth of the phonon mode along three directions in phase space. That is, there are three preferred phase values that the phonon state takes on as a result of Raman scattering. We show that the combination of Raman processes that produces a given set of measured photon numbers always produces phonons in multiples of three. In the quantum number-state representation, these multiples of three are responsible for the threefold phase-space symmetry seen in the conditioned phonon states. With a semiclassical model, we show how this three-phase preference can also be understood in light of phase correlations that are known to spontaneously arise in single-pumped Raman frequency combs. Additionally, our semiclassical model predicts that the optical modes also grow preferentially along three phases, suggesting that the dual-pumped Raman optical frequency comb is partially phase-stabilized.

Electrical and optical characterization of green synthesized Gd{sub 2}S{sub 3}

Energy Technology Data Exchange (ETDEWEB)

Paul, Somnath, E-mail: somnathpaul459@gmail.com; Sarkar, A. [Dept of Physics, Bijoy Krishna Girls’ College, 5/3, M. G. Road, Howrah-711101 (India)

2016-05-06

Gadolinium sulphide (Gd{sub 2}S{sub 3}) is a magnetic semiconductor with large band gap. Gd{sub 2}S{sub 3} was synthesized following chemical and green techniques. Later process provides good stability of the nano clusters (NC) due to in-situ capping of Gd{sub 2}S{sub 3} NC. It has been found that the optical band gap in Gd{sub 2}S{sub 3} developed by green synthesis is lowered considerably over that in chemically synthesized Gd{sub 2}S{sub 3}. The green agencies used in this work are Jatropha Latex and dilute Garlic extract; both are enriched in sulphur and other organic polymer molecules. Simple observation shows that Gd{sub 2}S{sub 3} NC retains residual magnetization. In this work optical and electrical characterization of the developed Gd{sub 2}S{sub 3} specimens are carried out. The overall results obtained are good.

Light-induced nonthermal population of optical phonons in nanocrystals

Science.gov (United States)

Falcão, Bruno P.; Leitão, Joaquim P.; Correia, Maria R.; Soares, Maria R.; Wiggers, Hartmut; Cantarero, Andrés; Pereira, Rui N.

2017-03-01

Raman spectroscopy is widely used to study bulk and nanomaterials, where information is frequently obtained from spectral line positions and intensities. In this study, we monitored the Raman spectrum of ensembles of semiconductor nanocrystals (NCs) as a function of optical excitation intensity (optical excitation experiments). We observe that in NCs the red-shift of the Raman peak position with increasing light power density is much steeper than that recorded for the corresponding bulk material. The increase in optical excitation intensity results also in an increasingly higher temperature of the NCs as obtained with Raman thermometry through the commonly used Stokes/anti-Stokes intensity ratio. More significantly, the obtained dependence of the Raman peak position on temperature in optical excitation experiments is markedly different from that observed when the same NCs are excited only thermally (thermal excitation experiments). This difference is not observed for the control bulk material. The inefficient diffusion of photogenerated charges in nanoparticulate systems, due to their inherently low electrical conductivity, results in a higher steady-state density of photoexcited charges and, consequently, also in a stronger excitation of optical phonons that cannot decay quickly enough into acoustic phonons. This results in a nonthermal population of optical phonons and thus the Raman spectrum deviates from that expected for the temperature of the system. Our study has major consequences to the general application of Raman spectroscopy to nanomaterials.

Pump pulse duration dependence of coherent phonon amplitudes in antimony

Energy Technology Data Exchange (ETDEWEB)

Misochko, O. V., E-mail: misochko@issp.ac.ru [Russian Academy of Sciences, Institute of Solid State Physics (Russian Federation)

2016-08-15

Coherent optical phonons of A{sub 1k} and E{sub k} symmetry in antimony have been studied using the femtosecond pump–probe technique. By varying the pump-pulse duration and keeping the probe duration constant, it was shown that the amplitude of coherent phonons of both symmetries exponentially decreases with increasing pulse width. It was found that the amplitude decay rate for the fully symmetric phonons with larger frequency is greater than that of the doubly degenerate phonons, whereas the frequency and lifetime for coherent phonons of both symmetries do not depend on the pump-pulse duration. Based on this data, the possibility of separation between dynamic and kinematic contributions to the generation mechanism of coherent phonons is discussed.

Role of heat treatment on structural and optical properties of thermally evaporated Ga{sub 10}Se{sub 81}Pb{sub 9} chalcogenide thin films

Energy Technology Data Exchange (ETDEWEB)

El-Sebaii, A.A., E-mail: ahmedelsebaii@yahoo.com [Department of Physics, Faculty of Science, King Abdulaziz University, 80203 Jeddah 21589 (Saudi Arabia); Khan, Shamshad A. [Department of Physics, St. Andrews College, Gorakhpur 273001 (India); Al-Marzouki, F.M.; Faidah, A.S.; Al-Ghamdi, A.A. [Department of Physics, Faculty of Science, King Abdulaziz University, 80203 Jeddah 21589 (Saudi Arabia)

2012-08-15

Amorphous chalcogenides, based on Se, have become materials of commercial importance and were widely used for optical storage media. The present work deals with the structural and optical properties of Ga{sub 10}Se{sub 81}Pb{sub 9} ternary chalcogenide glass prepared by melt quenching technique. The glass transition, crystallization and melting temperatures of the synthesized glass were measured by non-isothermal DSC measurements at a constant heating rate of 30 K/min. Thin films of thickness 4000 A were prepared by thermal evaporation techniques on glass/Si (1 0 0) wafer substrate. These thin films were thermally annealed for two hours at three different annealing temperatures of 345, 360 and 375 K, which were in between the glass transition and crystallization temperatures of the Ga{sub 10}Se{sub 81}Pb{sub 9} glass. The structural, morphological and optical properties of as-prepared and annealed thin films were studied. Analysis of the optical absorption data showed that the rules of the non-direct transitions predominate. It was also found that the optical band gap decreases while the absorption coefficient, refractive index and extinction coefficient increase with increasing the annealing temperature. Due to the higher values of absorption coefficient and annealing dependence of the optical band gap and optical constants, the investigated material could be used for optical storage. - Highlights: Black-Right-Pointing-Pointer Annealing effect on structure and optical band gap has been investigated. Black-Right-Pointing-Pointer The amorphous nature has been verified by x-ray diffraction and DSC measurements. Black-Right-Pointing-Pointer Thermal annealing causes a decrease in optical band gap in Ga{sub 10}Se{sub 81}Pb{sub 9} thin films. Black-Right-Pointing-Pointer The decrease in optical band gap can be interpreted on the basis of amorphous-crystalline phase transformation. Black-Right-Pointing-Pointer Optical absorption data showed that the rules of the non

Luminescence and optical spectroscopy of charge transfer processes in solid solutions Ni{sub C}Mg{sub 1−C}O and Ni{sub x}Zn{sub 1−x}O

Energy Technology Data Exchange (ETDEWEB)

Sokolov, V.I., E-mail: visokolov@imp.uran.ru [Institute of Metal Physics, Russian Academy of Science, Ural Branch, S. Kovalevskaya Street 18, 620990 Yekaterinburg (Russian Federation); Pustovarov, V.A.; Churmanov, V.N. [Ural Federal University, Mira Street 19, 620002 Yekaterinburg (Russian Federation); Gruzdev, N.B.; Uimin, M.A.; Byzov, I.V.; Druzhinin, A.V. [Institute of Metal Physics, Russian Academy of Science, Ural Branch, S. Kovalevskaya Street 18, 620990 Yekaterinburg (Russian Federation); Mironova-Ulmane, N.A. [Institute of Solid State Physics, University of Latvia, Kengaraga Street 8, LV-1063 Riga (Latvia)

2016-01-15

In this work photoluminescence spectra for Ni{sub c}Mg{sub 1−c}O and Ni{sub x}Zn{sub 1−x}O solid solutions with the rock-salt crystal structure were obtained under synchrotron radiation excitation. Periodical peaks in the photoluminescence excitation spectrum of Ni{sub c}Mg{sub 1−c}O (c=0.008) have been discovered for a wide-gap oxide doped with 3d impurities for the first time. They can be considered as LO phonon repetitions of the narrow zero phonon line resulted from the optical transitions into the p–d charge transfer exciton [d{sup 9}h] state. A close coincidence in energy of different peculiarities in the optical absorption and photoluminescence excitation spectra for the Ni{sub c}Mg{sub 1−c}O and Ni{sub x}Zn{sub 1−x}O solid solutions is due to the practically equal interatomic distances Ni–O in the investigated materials. The bulk of new experimental results is the trustworthy evidence that only the p–d charge transfer transitions manifest themselves in the spectral region of 3.5–6.5 eV. - Highlights: • Emission of Ni{sub c}Mg{sub 1−c}O nanocystals excited by synchrotron radiation is obtained. • LO phonon repetitions have been observed in PLE spectra of Ni{sub c}Mg{sub 1−c}O firstly for wide gap oxide materials doped with 3d impurities. • The [d{sup 9}h] acceptor exciton state in Ni{sub c}Mg{sub 1−c}O (c=0.008) are indirectly revealed. • The begin of PLE spectra of Ni{sub x}Zn{sub 1−x}O are not virtually shifted with a change of composition x. • The near energy coincidence of absorption peaks for nanocrystals NiO and single crystal Ni{sub c}Mg{sub 1−c}O (c=0.0006) manifests itself.

Effect of Pd ion doping in the band gap of SnO{sub 2} nanoparticles: structural and optical studies

Energy Technology Data Exchange (ETDEWEB)

Nandan, Brajesh; Venugopal, B. [Pondicherry University, Centre for Nanoscience and Technology (India); Amirthapandian, S.; Panigrahi, B. K. [Indira Gandhi Centre for Atomic Research, Ion Beam and Computer Simulation Section, Materials Science Group (India); Thangadurai, P., E-mail: thangadurai.p@gmail.com [Pondicherry University, Centre for Nanoscience and Technology (India)

2013-10-15

Pd ion doping has influenced the band gap of SnO{sub 2} nanoparticles. Undoped and Pd ion-doped SnO{sub 2} nanoparticles were synthesized by chemical co-precipitation method. A tetragonal phase of SnO{sub 2} with a grain size range of 7-13 nm was obtained (studied by X-ray diffraction and transmission electron microscopy). A decreasing trend in the particle size with increasing doping concentration was observed. The presence of Pd in doped SnO{sub 2} was confirmed by chemical analysis carried out by energy-dispersive spectroscopy in the transmission electron microscope. Diffuse reflectance spectra showed a blue shift in absorption with increasing palladium concentration. Band gap of SnO{sub 2} nanoparticles was estimated from the diffuse reflectance spectra using Kubelka-Munk function and it was increasing with the increase of Pd ion concentration from 3.73 to 4.21 eV. The variation in band gap is attributed predominantly to the lattice strain and particle size. All the samples showed a broad photoluminescence emission centered at 375 nm when excited at 270 nm. A systematic study on the structural and optical properties of SnO{sub 2} nanoparticles is presented.

Prediction of phonon-mediated superconductivity in hole-doped black phosphorus.

Science.gov (United States)

Feng, Yanqing; Sun, Hongyi; Sun, Junhui; Lu, Zhibin; You, Yong

2018-01-10

We study the conventional electron-phonon mediated superconducting properties of hole-doped black phosphorus by density functional calculations and get quite a large electron-phonon coupling (EPC) constant λ ~ 1.0 with transition temperature T C ~ 10 K, which is comparable to MgB 2 when holes are doped into the degenerate and nearly flat energy bands around the Fermi level. We predict that the softening of low-frequency [Formula: see text] optical mode and its phonon displacement, which breaks the lattice nonsymmorphic symmetry of gliding plane and lifts the band double degeneracy, lead to a large EPC. These factors are favorable for BCS superconductivity.

Prediction of phonon-mediated superconductivity in hole-doped black phosphorus

Science.gov (United States)

Feng, Yanqing; Sun, Hongyi; Sun, Junhui; Lu, Zhibin; You, Yong

2018-01-01

We study the conventional electron-phonon mediated superconducting properties of hole-doped black phosphorus by density functional calculations and get quite a large electron-phonon coupling (EPC) constant λ ~ 1.0 with transition temperature T C ~ 10 K, which is comparable to MgB2 when holes are doped into the degenerate and nearly flat energy bands around the Fermi level. We predict that the softening of low-frequency B3g1 optical mode and its phonon displacement, which breaks the lattice nonsymmorphic symmetry of gliding plane and lifts the band double degeneracy, lead to a large EPC. These factors are favorable for BCS superconductivity.

Omnidirectional photonic band gap in magnetron sputtered TiO{sub 2}/SiO{sub 2} one dimensional photonic crystal

Energy Technology Data Exchange (ETDEWEB)

Jena, S., E-mail: shuvendujena9@gmail.com [Atomic & Molecular Physics Division, Bhabha Atomic Research Centre, Trombay, Mumbai 400 085 (India); Tokas, R.B.; Sarkar, P. [Atomic & Molecular Physics Division, Bhabha Atomic Research Centre, Trombay, Mumbai 400 085 (India); Misal, J.S.; Maidul Haque, S.; Rao, K.D. [Photonics & Nanotechnology Section, BARC-Vizag, Autonagar, Atomic & Molecular Physics Division, Bhabha Atomic Research Centre facility, Visakhapatnam 530 012 (India); Thakur, S.; Sahoo, N.K. [Atomic & Molecular Physics Division, Bhabha Atomic Research Centre, Trombay, Mumbai 400 085 (India)

2016-01-29

One dimensional photonic crystal (1DPC) of TiO{sub 2}/SiO{sub 2} multilayer has been fabricated by sequential asymmetric bipolar pulsed dc magnetron sputtering of TiO{sub 2} and radio frequency magnetron sputtering of SiO{sub 2} to achieve wide omnidirectional photonic band in the visible region. The microstructure and optical response of the TiO{sub 2}/SiO{sub 2} photonic crystal have been characterized by atomic force microscopy, scanning electron microscopy and spectrophotometry respectively. The surface of the photonic crystal is very smooth having surface roughness of 2.6 nm. Reflection and transmission spectra have been measured in the wavelength range 300 to 1000 nm for both transverse electric and transverse magnetic waves. Wide high reflection photonic band gap (∆ λ = 245 nm) in the visible and near infrared regions (592–837 nm) at normal incidence has been achieved. The measured photonic band gap (PBG) is found well matching with the calculated photonic band gap of an infinite 1DPC. The experimentally observed omnidirectional photonic band 592–668 nm (∆ λ = 76 nm) in the visible region with band to mid-band ratio ∆ λ/λ = 12% for reflectivity R > 99% over the incident angle range of 0°–70° is found almost matching with the calculated omnidirectional PBG. The omnidirectional reflection band is found much wider as compared to the values reported in literature so far in the visible region for TiO{sub 2}/SiO{sub 2} periodic photonic crystal. - Highlights: • TiO{sub 2}/SiO{sub 2} 1DPC has been fabricated using magnetron sputtering technique. • Experimental optical response is found good agreement with simulation results. • Wide omnidirectional photonic band in the visible spectrum has been achieved.

Effects of thermo-order-mechanical coupling on band structures in liquid crystal nematic elastomer porous phononic crystals.

Science.gov (United States)

Yang, Shuai; Liu, Ying

2018-08-01

Liquid crystal nematic elastomers are one kind of smart anisotropic and viscoelastic solids simultaneously combing the properties of rubber and liquid crystals, which is thermal sensitivity. In this paper, the wave dispersion in a liquid crystal nematic elastomer porous phononic crystal subjected to an external thermal stimulus is theoretically investigated. Firstly, an energy function is proposed to determine thermo-induced deformation in NE periodic structures. Based on this function, thermo-induced band variation in liquid crystal nematic elastomer porous phononic crystals is investigated in detail. The results show that when liquid crystal elastomer changes from nematic state to isotropic state due to the variation of the temperature, the absolute band gaps at different bands are opened or closed. There exists a threshold temperature above which the absolute band gaps are opened or closed. Larger porosity benefits the opening of the absolute band gaps. The deviation of director from the structural symmetry axis is advantageous for the absolute band gap opening in nematic state whist constrains the absolute band gap opening in isotropic state. The combination effect of temperature and director orientation provides an added degree of freedom in the intelligent tuning of the absolute band gaps in phononic crystals. Copyright © 2018 Elsevier B.V. All rights reserved.

Energetic band structure of Zn{sub 3}P{sub 2} crystals

Energy Technology Data Exchange (ETDEWEB)

Stamov, I.G. [Tiraspol State Corporative University, Lablocicin Street 5, 2069 Tiraspol (Moldova, Republic of); Syrbu, N.N., E-mail: sirbunn@yahoo.com [Technical University of Moldova, 168 Stefan cel Mare Avenue, 2004 Chisinau (Moldova, Republic of); Dorogan, A.V. [Technical University of Moldova, 168 Stefan cel Mare Avenue, 2004 Chisinau (Moldova, Republic of)

2013-01-01

Optical functions n, k, {epsilon}{sub 1}, {epsilon}{sub 2} and d{sup 2}{epsilon}{sub 2}/dE{sup 2} have been determined from experimental reflection spectra in the region of 1-10 eV. The revealed electronic transitions are localized in the Brillouin zone. The magnitude of valence band splitting caused by the spin-orbital interaction {Delta}{sub SO} is lower than the splitting caused by the crystal field {Delta}{sub CR} in the center of Brillouin zone and L and X points. The switching effects are investigated in Zn{sub 3}P{sub 2} crystals. The characteristics of experimental samples with electric switching, adjustable resistors, and time relays based on Zn{sub 3}P{sub 2} are presented.

Local symmetry breaking and spin–phonon coupling in SmCrO{sub 3} orthochromite

Energy Technology Data Exchange (ETDEWEB)

El Amrani, M. [GREMAN CNRS UMR 7347, Université F. Rabelais, IUT de Blois, 15 rue de la Chocolatrie 41029 Blois cedex (France); Zaghrioui, M., E-mail: zaghrioui@univ-tours.fr [GREMAN CNRS UMR 7347, Université F. Rabelais, IUT de Blois, 15 rue de la Chocolatrie 41029 Blois cedex (France); Ta Phuoc, V.; Gervais, F. [GREMAN CNRS UMR 7347, Université F. Rabelais, IUT de Blois, 15 rue de la Chocolatrie 41029 Blois cedex (France); Massa, Néstor E. [Laboratorio Nacional de Investigacion y Servicios en Espectroscopia Optica-Centro CEQUINOR, Universidad Nacional de La Plata, C. C. 962, 1900 La Plata (Argentina)

2014-06-01

Raman scattering and infrared reflectivity performed on polycrystalline SmCrO{sub 3} support strong influence of the antiferromagnetic order on phonon modes. Both measurements show softening of some modes below T{sub N}. Such a behavior is explained by spin–phonon coupling in this compound. Furthermore, temperature dependence of the infrared spectra has demonstrated important changes compared to the Raman spectra, suggesting strong structural modifications due to the cation displacements rather to those of the oxygen ions. Our results reveal that polar distortions originating in local symmetry breaking, i.e. local non-centrosymmetry, resulting in Cr off-centring. - Highlights: • We investigated Raman and infrared phonon modes of SmCrO{sub 3} versus temperature. • Results reveal strong influence of the antiferromagnetic order on phonon modes. • Temperature dependence of the infrared spectra shows strong structural modifications suggesting local symmetry breaking.

Mechanical, electronic, and optical properties of β-B{sub 6}O. First-principles calculations

Energy Technology Data Exchange (ETDEWEB)

Yang, Ruike; Ma, Shaowei; Wei, Qun [Xidian Univ., Shaanxi (China). School of Physics and Optoelectronic Engineering; Du, Zheng [National Supercomputing Center in Shenzhen, Shenzhen (China)

2017-07-01

The mechanical, electronic, and optical properties of β-B{sub 6}O are calculated by first-principles. The structural optimization and all properties are calculated by the method of generalized gradient approximation - Perdew, Burke and Ernzerhof (PBE). The hardness of β-B{sub 6}O is 39 GPa under a pressure of 0 GPa, which indicates that it belongs to a hard material. The band gap is indirect with a value of 1.836 eV, showing that β-B{sub 6}O is a semiconductor. The research of the electron localization function shows that the bonds of β-B{sub 6}O are covalent bonds, which can increase the stability of the compound. The phonon dispersion curves present the dynamical stability of β-B{sub 6}O under pressures of 0 and 50 GPa. The optical properties of β-B{sub 6}O are also calculated. In the energy range from 0 to 18 eV, β-B{sub 6}O presents high reflectivity; it has a strong absorption in the energy range from 3 to 18 eV. The refractive index results show that light propagates through the β-B{sub 6}O in a difficult manner in the energy range from 6.9 to 16.5 eV. In addition, the energy of the plasma frequency for β-B{sub 6}O is 16.6 eV and the peak value of the loss function is 13.6. These properties provide the basis for the development and application of β-B{sub 6}O.

Opening complete band gaps in two dimensional locally resonant phononic crystals

Science.gov (United States)

Zhou, Xiaoling; Wang, Longqi

2018-05-01

Locally resonant phononic crystals (LRPCs) which have low frequency band gaps attract a growing attention in both scientific and engineering field recently. Wide complete locally resonant band gaps are the goal for researchers. In this paper, complete band gaps are achieved by carefully designing the geometrical properties of the inclusions in two dimensional LRPCs. The band structures and mechanisms of different types of models are investigated by the finite element method. The translational vibration patterns in both the in-plane and out-of-plane directions contribute to the full band gaps. The frequency response of the finite periodic structures demonstrate the attenuation effects in the complete band gaps. Moreover, it is found that the complete band gaps can be further widened and lowered by increasing the height of the inclusions. The tunable properties by changing the geometrical parameters provide a good way to open wide locally resonant band gaps.

Acousto-optical phonon excitation in cubic piezoelectric slabs and crystal growth orientation effects

DEFF Research Database (Denmark)

Willatzen, Morten; Duggen, Lars

2017-01-01

In this paper we investigate theoretically the influence of piezoelectric coupling on phonon dispersion relations. Specifically we solve dispersion relations for a fully coupled zinc-blende freestanding quantum well for different orientations of the crystal unit cell. It is shown that the phonon...... mode density in GaAs can change by a factor of approximately 2–3 at qx a = 1 for different crystal-growth directions relative to the slab thickness direction. In particular, it is found that optical and acoustic phonon modes are always piezoelectrically coupled, independent of the crystal...... that the piezoelectric effect leads to a drastically enhanced coupling of acoustic and optical phonon modes and increase in the local phonon density of states near the plasma frequency where the permittivity approaches zero....

Magnetorefractive effect in the La{sub 1−x}K{sub x}MnO{sub 3} thin films grown by MOCVD

Energy Technology Data Exchange (ETDEWEB)

Sukhorukov, Yu.P., E-mail: suhorukov@imp.uran.ru [Institute of Metal Physics, Ural Division of RAS, 620990 Ekaterinburg (Russian Federation); Telegin, A.V. [Institute of Metal Physics, Ural Division of RAS, 620990 Ekaterinburg (Russian Federation); Bessonov, V.D. [Institute of Metal Physics, Ural Division of RAS, 620990 Ekaterinburg (Russian Federation); University of Bialystok, 15-424 Bialystok (Poland); Gan’shina, E.A.; Kaul’, A.R.; Korsakov, I.E.; Perov, N.S.; Fetisov, L.Yu. [Faculty of Physics, Moscow State University, Moscow 119991 (Russian Federation); Yurasov, A.N. [Moscow State Technical University of Radioengineering, Electronics and Automation, 119454 Moscow (Russian Federation)

2014-10-01

Thin epitaxial La{sub 1−x}K{sub x}MnO{sub 3} films were grown using two-stage procedure. Influence of substitution of La{sup 3+} ions with K{sup +} ions on the optical and electrical properties of La{sub 1−x}K{sub x}MnO{sub 3} films (x=0.05, 0.10, 0.15 i 0.18) has been studied in detail. A noticeable magnetorefractive effect in the films under study was detected in the infrared range. Magnetorefractive effect as well as transverse magneto-optical Kerr effect and magnetoresistance have the maximum in optimally doped sample with x=0.18 corresponding to the highest Curie temperature. The experimental data for compositions close to optimally doped films are in good agreement with the data calculated in the framework of a theory developed for manganites. The resonance-like contribution to magnetoreflection spectra of manganite films has been observed in the vicinity of the phonon bands. It is shown that magnetic and charge inhomogeneities strongly influence on the magneto-optical effects in films. Thin films of La{sub 1−x}K{sub x}MnO{sub 3} with the large values of Kerr and magnetorefractive effect are promising magneto-optical material in the infrared range. - Highlights: • Giant magnetorefractive effect was obtained in La{sub 1−x}K{sub x}MnO{sub 3} films in the infrared. • Inhomogeneity as well as doping level strongly influences the value of magnetorefractive effect. • Resonance-like bands have been observed in the magnetoreflection spectra of the films. • The obtained experimental data can be explained in the framework of the MRE theory.

Crystal growth and structure, electrical, and optical characterization of the semiconductor Cu{sub 2}SnSe{sub 3}

Energy Technology Data Exchange (ETDEWEB)

Marcano, G.; Rincon, C.; de Chalbaud, L. M.; Bracho, D. B.; Perez, G. Sanchez

2001-08-15

X-ray powder diffraction by p-type Cu{sub 2}SnSe{sub 3}, prepared by the vertical Bridgman--Stockbarger technique, shows that this material crystallizes in a monoclinic structure, space group Cc, with unit cell parameters a=6.5936(1)Aa, b=12.1593(4)Aa, c=6.6084(3)Aa, and {beta}=108.56(2){sup o}. The temperature variation of the hole concentration p obtained from the Hall effect and electrical resistivity measurements from about 160 to 300 K, is explained as due to the thermal activation of an acceptor level with an ionization energy of 0.067 eV, whereas below 100 K, the conduction in the impurity band dominates the electrical transport process. From the analysis of the p vs T data, the density-of-states effective mass of the holes is estimated to be nearly of the same magnitude as the free electron mass. In the valence band, the temperature variation of the hole mobility is analyzed by taking into account the scattering of charge carriers by ionized and neutral impurities, and acoustic phonons. In the impurity band, the mobility is explained as due to the thermally activated hopping transport. From the analysis of the optical absorption spectra at room temperature, the fundamental energy gap was determined to be 0.843 eV. The photoconductivity spectra show the presence of a narrow band gap whose main peak is observed at 0.771 eV. This band is attributed to a free-to-bound transition from the defect acceptor level to the conduction band. The origin of this acceptor state, consistent with the chemical composition of the samples and screening effects, is tentatively attributed to selenium interstitials. {copyright} 2001 American Institute of Physics.

Electronic structure calculations and optical properties of a new organic-inorganic luminescent perovskite: (C{sub 9}H{sub 19}NH{sub 3}){sub 2}PbI{sub 2}Br{sub 2}

Energy Technology Data Exchange (ETDEWEB)

Abid, H., E-mail: haithamlpa@yahoo.fr [Laboratoire de Physique Appliquee, Faculte des sciences, Universite de Sfax (Tunisia); Institut Neel, CNRS-Universite J. Fourier, BP 166, 38042 Grenoble (France); Samet, A.; Dammak, T. [Laboratoire de Physique Appliquee, Faculte des sciences, Universite de Sfax (Tunisia); Mlayah, A. [Centre d' Elaboration de Materiaux et d' Etudes Structurales (CEMES), CNRS-Universite de Toulouse, 29 rue Jeanne Marvig, 31055 Toulouse (France); Hlil, E.K. [Institut Neel, CNRS-Universite J. Fourier, BP 166, 38042 Grenoble (France); Abid, Y. [Laboratoire de Physique Appliquee, Faculte des sciences, Universite de Sfax (Tunisia)

2011-08-15

(C{sub 9}H{sub 19}NH{sub 3}){sub 2}PbI{sub 2}Br{sub 2} compound is a new crystal belonging to the large hybrid organic-inorganic perovskites compounds family. Optical properties are investigated by optical absorption UV-visible and photoluminescence (PL) techniques. Bands to band absorption peak at 2.44 eV as well as an extremely strong yellow-green photoluminescence emission at 2.17 eV is observed at room temperature. First principle calculations based on the DFT and FLAPW methods combined with LDA approximation are performed as well. Density of state close to the gap is presented and discussed in terms of optical absorption and photoluminescence experimental results. The perfect agreement between experimental data and electronic structure calculations is highlighted. - Highlights: > (C{sub 9}H{sub 19}NH{sub 3}){sub 2}PbI{sub 2}Br{sub 2} compound is a new crystal with strong yellow-green PL emission at 2.17 eV. > Calculations based on DFT and FLAPW method combined with LDA approximation are performed. > Gap, optical transitions and exciton presence were predicted from density of states. > Agreement between experimental data and electronic structure calculations.

Resonant intersubband polariton-LO phonon scattering in an optically pumped polaritonic device

Science.gov (United States)

Manceau, J.-M.; Tran, N.-L.; Biasiol, G.; Laurent, T.; Sagnes, I.; Beaudoin, G.; De Liberato, S.; Carusotto, I.; Colombelli, R.

2018-05-01

We report experimental evidence of longitudinal optical (LO) phonon-intersubband polariton scattering processes under resonant injection of light. The scattering process is resonant with both the initial (upper polariton) and final (lower polariton) states and is induced by the interaction of confined electrons with longitudinal optical phonons. The system is optically pumped with a mid-IR laser tuned between 1094 cm-1 and 1134 cm-1 (λ = 9.14 μm and λ = 8.82 μm). The demonstration is provided for both GaAs/AlGaAs and InGaAs/AlInAs doped quantum well systems whose intersubband plasmon lies at a wavelength of ≈10 μm. In addition to elucidating the microscopic mechanism of the polariton-phonon scattering, it is found to differ substantially from the standard single particle electron-LO phonon scattering mechanism, and this work constitutes an important step towards the hopefully forthcoming demonstration of an intersubband polariton laser.

Hypersonic modulation of light in three-dimensional photonic and phononic band-gap materials.

Science.gov (United States)

Akimov, A V; Tanaka, Y; Pevtsov, A B; Kaplan, S F; Golubev, V G; Tamura, S; Yakovlev, D R; Bayer, M

2008-07-18

The elastic coupling between the a-SiO2 spheres composing opal films brings forth three-dimensional periodic structures which besides a photonic stop band are predicted to also exhibit complete phononic band gaps. The influence of elastic crystal vibrations on the photonic band structure has been studied by injection of coherent hypersonic wave packets generated in a metal transducer by subpicosecond laser pulses. These studies show that light with energies close to the photonic band gap can be efficiently modulated by hypersonic waves.

Phonons, defects and optical damage in crystalline acetanilide

Science.gov (United States)

Kosic, Thomas J.; Hill, Jeffrey R.; Dlott, Dana D.

1986-04-01

Intense picosecond pulses cause accumulated optical damage in acetanilide crystals at low temperature. Catastrophic damage to the irradiated volume occurs after an incubation period where defects accumulate. The optical damage is monitored with subanosecond time resolution. The generation of defects is studied with damage-detected picosecond spectroscopy. The accumulation of defects is studied by time-resolved coherent Raman scattering, which is used to measure optical phonon scattering from the accumulating defects.

Optical and magneto-optical effects in Hg{sub 1-x}Cd{sub x}Cr{sub 2}Se{sub 4} (0 ⩽ x ⩽ 1) single crystals

Energy Technology Data Exchange (ETDEWEB)

Sukhorukov, Yu. P., E-mail: suhorukov@imp.uran.ru; Telegin, A. V.; Bebenin, N. G.; Zainullina, R. I.; Mostovshchikova, E. V.; Viglin, N. A. [Ural Branch, Russian Academy of Sciences, Mikheev Institute of Metal Physics (Russian Federation); Gan’shina, E. A.; Zykov, G. S. [Moscow State University (Russian Federation); Fedorov, V. A. [Russian Academy of Sciences, Kurnakov Institute of Inorganic Chemistry (Russian Federation); Menshchikova, T. K.; Buchkevich, A. A. [Ural Branch, Russian Academy of Sciences, Mikheev Institute of Metal Physics (Russian Federation)

2015-09-15

The concentration, temperature, and magnetic-field dependences of the magnetoreflection and magnetotransmission of natural light in the infrared spectral range and the Kerr effect in single crystals of ferromagnetic Hg{sub 1-x}Cd{sub x}Cr{sub 2}Se{sub 4} (0 ⩽ x ⩽ 1) spinels have been studied. A relationship of the magneto-optical properties to the electronic band structure of spinels has been established. The most significant changes in the spectra of magnetoreflection, magnetotransmission, and the Kerr effect are shown to be observed for 0.1 < x < 0.25 and are attributable to a rearrangement of the band structure as the composition changes.

Electron and electron-phonon effects in quasi-two-dimensional molecular conductor theta-(BETS) sub 4 HgBr sub 4 (C sub 6 H sub 5 Cl): optical investigations at 300-15 K

CERN Document Server

Vlasova, R M; Petrov, B V; Semkin, N D; Zhilyaeva, E I; Bogdanova, O A; Lyubovskaya, R N; Graja, A

2002-01-01

One studied the polarized spectra of reflection and spectra of optical transmission of theta-(BETS) sub 4 HgBr sub 4 (C sub 6 H sub 5 Cl) quasi-two-dimensional molecular conductor within 700-6500 cm sup - sup 1 range under 300-15 K temperatures and within 9000-40000 cm sup - sup 1 under 300 K for two principal directions within crystal plane parallel to conducting layers of BETS molecules. Under 300 K within IR region the spectra are characterized by the intensive essential peculiarities (1200-1400 cm sup - sup 1) caused by electron-oscillation coupling (EOC). At temperature drop within 180-80 K range one observes in the spectra a Lorentz term with omega sub t = 2900 cm sup - sup 1 and three extra bands within 800-1180 cm sup - sup 1 region caused by EOC. The derived results are indicative of unstable structural distortions along two principal directions in a crystal followed by formation of a charge density comparable wave

Phononic band gap and wave propagation on polyvinylidene fluoride-based acoustic metamaterials

Directory of Open Access Journals (Sweden)

Oral Oltulu

2016-12-01

Full Text Available In the present work, the acoustic band structure of a two-dimensional phononic crystal (PC containing an organic ferroelectric (PVDF-polyvinylidene fluoride and topological insulator (SnTe was investigated by the plane-wave-expansion (PWE method. Two-dimensional PC with square lattices composed of SnTe cylindrical rods embedded in the PVDF matrix is studied to find the allowed and stop bands for the waves of certain energy. Phononic band diagram ω = ω(k for a 2D PC, in which non-dimensional frequencies ωa/2πc (c-velocity of wave were plotted vs. the wavevector k along the Г–X–M–Г path in the square Brillouin zone shows five stop bands in the frequency range between 10 and 110 kHz. The ferroelectric properties of PVDF and the unusual properties of SnTe as a topological material give us the ability to control the wave propagation through the PC over a wide frequency range of 103–106 Hz. SnTe is a discrete component that allows conducting electricity on its surface but shows insulator properties through its bulk volume. Tin telluride is considered as an acoustic topological insulator as the extension of topological insulators into the field of “topological phononics”.

H irradiation effects on the GaAs-like Raman modes in GaAs{sub 1-x}N{sub x}/GaAs{sub 1-x}N{sub x}:H planar heterostructures

Energy Technology Data Exchange (ETDEWEB)

Giulotto, E., E-mail: enricovirgilio.giulotto@unipv.it; Geddo, M.; Patrini, M.; Guizzetti, G. [Dipartimento di Fisica, Università degli studi di Pavia, Via Bassi 6, I-27100 Pavia (Italy); Felici, M.; Capizzi, M.; Polimeni, A. [Dipartimento di Fisica, Sapienza Università di Roma, Piazzale A. Moro 2, I-00185 Roma (Italy); Martelli, F. [Laboratorio Nazionale TASC-IOM-CNR, Area Science Park, S.S. 14, Km. 163.5, 34149 Trieste (Italy); Istituto per la Microelettronica e i Microsistemi, CNR, Via del fosso del cavaliere 100, 00133 Roma (Italy); Rubini, S. [Laboratorio Nazionale TASC-IOM-CNR, Area Science Park, S.S. 14, Km. 163.5, 34149 Trieste (Italy)

2014-12-28

The GaAs-like longitudinal optical phonon frequency in two hydrogenated GaAs{sub 1-x}N{sub x}/GaAs{sub 1-x}N{sub x}:H microwire heterostructures—with similar N concentration, but different H dose and implantation conditions—has been investigated by micro-Raman mapping. In the case of GaAs{sub 0.991}N{sub 0.009} wires embedded in barriers where GaAs-like properties are recovered through H irradiation, the phonon frequency in the barriers undergoes a blue shift with respect to the wires. In GaAs{sub 0.992}N{sub 0.008} wires embedded in less hydrogenated barriers, the phonon frequency exhibits an opposite behavior (red shift). Strain, disorder, phonon localization effects induced by H-irradiation on the GaAs-like phonon frequency are discussed and related to different types of N-H complexes formed in the hydrogenated barriers. It is shown that the red (blue) character of the frequency shift is related to the dominant N-2H (N-3H) type of complexes. Moreover, for specific experimental conditions, an all-optical determination of the uniaxial strain field is obtained. This may improve the design of recently presented devices that exploit the correlation between uniaxial stress and the degree of polarization of photoluminescence.

Phononic Band Gaps in 2D Quadratic and 3D Cubic Cellular Structures.

Science.gov (United States)

Warmuth, Franziska; Körner, Carolin

2015-12-02

The static and dynamic mechanical behaviour of cellular materials can be designed by the architecture of the underlying unit cell. In this paper, the phononic band structure of 2D and 3D cellular structures is investigated. It is shown how the geometry of the unit cell influences the band structure and eventually leads to full band gaps. The mechanism leading to full band gaps is elucidated. Based on this knowledge, a 3D cellular structure with a broad full band gap is identified. Furthermore, the dependence of the width of the gap on the geometry parameters of the unit cell is presented.

Spectral element method for band-structure calculations of 3D phononic crystals

International Nuclear Information System (INIS)

Shi, Linlin; Liu, Na; Zhou, Jianyang; Zhou, Yuanguo; Wang, Jiamin; Liu, Qing Huo

2016-01-01

The spectral element method (SEM) is a special kind of high-order finite element method (FEM) which combines the flexibility of a finite element method with the accuracy of a spectral method. In contrast to the traditional FEM, the SEM exhibits advantages in the high-order accuracy as the error decreases exponentially with the increase of interpolation degree by employing the Gauss–Lobatto–Legendre (GLL) polynomials as basis functions. In this study, the spectral element method is developed for the first time for the determination of band structures of 3D isotropic/anisotropic phononic crystals (PCs). Based on the Bloch theorem, we present a novel, intuitive discretization formulation for Navier equation in the SEM scheme for periodic media. By virtue of using the orthogonal Legendre polynomials, the generalized eigenvalue problem is converted to a regular one in our SEM implementation to improve the efficiency. Besides, according to the specific geometry structure, 8-node and 27-node hexahedral elements as well as an analytic mesh have been used to accurately capture curved PC models in our SEM scheme. To verify its accuracy and efficiency, this study analyses the phononic-crystal plates with square and triangular lattice arrangements, and the 3D cubic phononic crystals consisting of simple cubic (SC), bulk central cubic (BCC) and faced central cubic (FCC) lattices with isotropic or anisotropic scatters. All the numerical results considered demonstrate that SEM is superior to the conventional FEM and can be an efficient alternative method for accurate determination of band structures of 3D phononic crystals. (paper)

Temperature dependent optical dispersion and electronic transitions of highly a-axis oriented 0.8Pb(Zn{sub 1/3}Nb{sub 2/3})O{sub 3}-0.2PbTiO{sub 3} films on SrTiO{sub 3} crystals: An ellipsometric evidence

Energy Technology Data Exchange (ETDEWEB)

Li, C.Q.; Zhang, J.Z.; Xu, L.P.; Zhu, J.J.; Duan, Z.H.; Hu, Z.G., E-mail: zghu@ee.ecnu.edu.cn; Chu, J.H.

2016-03-31

The relaxor ferroelectric 0.8Pb(Zn{sub 1/3}Nb{sub 2/3})O{sub 3}-0.2PbTiO{sub 3} (0.8PZN-0.2PT) films have been fabricated on (100) SrTiO{sub 3} substrates by the sol–gel method. The structure, optical properties and electronic transitions have been investigated using X-ray diffraction (XRD), atomic force microscopy, scanning electron microscopy and ellipsometric spectra. The pure perovskite phase with highly a-axis (100)-preferential orientation as well as low screw dislocation are extracted based on high resolution XRD. Moreover, the red-shift trend of the electronic transitions at about 3.01 eV as a function of temperature follows the Bose-Einstein law induced by the electron–phonon interactions and lattice thermal expansion. Interestingly, the different optical behavior and structure variation can be observed at about 500 K, which reveal tetragonal to cubic structural transformations for the 0.8PZN-0.2PT films. It indicates that the potential application of ellipsometric spectra in judging the phase transitions and symmetries of ferroelectric material. - Highlights: • The highly a-axis oriented as well as low screw dislocated films were fabricated. • The temperature-dependent evolution of band gap was investigated. • The tetragonal to cubic structural transformations were observed at about 500 K. • The electronic transition mechanism was discussed mainly by first-principles calculations.

Pump-probe studies of travelling coherent longitudinal acoustic phonon oscillations in GaAs

Energy Technology Data Exchange (ETDEWEB)

Xu, Y.; Qi, J.; Tolk, Norman [Department of Physics and Astronomy, Vanderbilt University, Nashville, TN, 37235 (United States); Miller, J. [Naval air Warfare Center Weapons Division, China Lake, CA 93555 (United States); Cho, Y.J.; Liu, X.; Furdyna, J.K. [Department of Physics, University of Notre Dame, Notre Dame, IN 46556 (United States); Shahbazyan, T.V. [Department of Physics, Jackson State University, MS 39217 (United States)

2008-07-01

We report comprehensive studies of long-lived oscillations in femtosecond optical pump-probe measurements on GaAs based systems. The oscillations arise from a photo-generated coherent longitudinal acoustic phonon wave at the sample surface, which subsequently travels from the surface into the GaAs substrate, thus providing information on the optical properties of the material as a function of time/depth. Wavelength-dependent studies of the oscillations near the bandgap of GaAs indicate strong correlations to the optical properties of GaAs. We also use the coherent longitudinal acoustic phonon waves to probe a thin buried Ga{sub 0.1}In{sub 0.9}As layers non-invasively. The observed phonon oscillations experience a reduction in amplitude and a phase change at wavelengths near the bandgap of the GaAs, when it passes through the thin Ga{sub x}In{sub 1-x}As layer. The layer depth and thicknesses can be extracted from the oscillation responses. A model has been developed that satisfactorily characterizes the experimental results. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Optical gain coefficients of silicon: a theoretical study

Science.gov (United States)

Tsai, Chin-Yi

2018-05-01

A theoretical model is presented and an explicit formula is derived for calculating the optical gain coefficients of indirect band-gap semiconductors. This model is based on the second-order time-dependent perturbation theory of quantum mechanics by incorporating all the eight processes of photon/phonon emission and absorption between the band edges of the conduction and valence bands. Numerical calculation results are given for Si. The calculated absorption coefficients agree well with the existing fitting formula of experiment data with two modes of phonons: optical phonons with energy of 57.73 meV and acoustic phonons with energy of 18.27 meV near (but not exactly at) the zone edge of the X-point in the dispersion relation of phonons. These closely match with existing data of 57.5 meV transverse optical (TO) phonons at the X4-point and 18.6 meV transverse acoustic (TA) phonons at the X3-point of the zone edge. The calculated results show that the material optical gain of Si will overcome free-carrier absorption if the energy separation of quasi-Fermi levels between electrons and holes exceeds 1.15 eV.

Performance of horn-coupled transition edge sensors for L- and S-band optical detection on the SAFARI instrument

Science.gov (United States)

Goldie, D. J.; Glowacka, D. M.; Withington, S.; Chen, Jiajun; Ade, P. A. R.; Morozov, D.; Sudiwala, R.; Trappe, N. A.; Quaranta, O.

2016-07-01

We describe the geometry, architecture, dark- and optical performance of ultra-low-noise transition edge sensors as THz detectors for the SAFARI instrument. The TESs are fabricated from superconducting Mo/Au bilayers coupled to impedance-matched superconducting β-phase Ta thin-film absorbers. The detectors have phonon-limited dark noise equivalent powers of order 0.5 - 1.0 aW/ √ Hz and saturation powers of order 20 - 40 fW. The low temperature test configuration incorporating micro-machined backshorts is also described, and construction and typical performance characteristics for the optical load are shown. We report preliminary measurements of the optical performance of these TESs for two SAFARI bands; L-band at 110 - 210 μm and S-band 34 - 60 μm .

Towards from indirect to direct band gap and optical properties of XYP{sub 2} (X=Zn, Cd; Y=Si, Ge, Sn)

Energy Technology Data Exchange (ETDEWEB)

Ullah, Sibghat [Department of Physics, Hazara University Mansehra, KPK (Pakistan); Murtaza, G., E-mail: murtaza@icp.edu.pk [Materials Modeling Lab, Department of Physics, Islamia College, Peshawar (Pakistan); Khenata, R. [Laboratoire de Physique Quantique et de Modélisation Mathématique, Université de Mascara, 29000 Mascara (Algeria); Reshak, A.H. [New Technologies—Research Center, University of West Bohemia, Univerzitni 8, 306 14 Pilsen (Czech Republic); Center of Excellence Geopolymer and Green Technology, School of Material Engineering, University Malaysia Perlis, 01007 Kangar, Perlis (Malaysia); Hayat, S.S. [Department of Physics, Hazara University Mansehra, KPK (Pakistan); Bin Omran, S. [Department of Physics and Astronomy, College of Science, King Saud University, P.O. Box 2455, Riyadh 11451 (Saudi Arabia)

2014-05-15

First principle calculations are performed to predict the electronic and optical properties of XYP{sub 2} (X=Zn, Cd; Y=Si, Ge, Sn) compounds. The calculations show an excellent agreement with the available experimental results as compared to previous calculations. The band gap value decreases by changing the cations X from Zn to Cd as well as Y from Si to Ge to Sn in XYP{sub 2}. The d-states of the Zn and Cd contribute majorly in the density of states. Bonding nature in these compounds is analyzed from the electron density plots. Optical response of these compounds is noted from the complex refractive index and reflectivity spectra. The wide direct band gap and the high reflectivity in the visible and ultraviolet regions for these compounds make them potential candidates for optoelectronic and photonic applications.

One phonon resonant Raman scattering in free-standing quantum wires

International Nuclear Information System (INIS)

Zhao, Xiang-Fu; Liu, Cui-Hong

2007-01-01

The scattering intensity (SI) of a free-standing cylindrical semiconductor quantum wire for an electron resonant Raman scattering (ERRS) process associated with bulk longitudinal optical (LO) phonon modes and surface optical (SO) phonon modes is calculated separately for T=0 K. The Frohlich interaction is considered to illustrate the theory for GaAs and CdS systems. Electron states are confined within a free-standing quantum wire (FSW). Single parabolic conduction and valence bands are assumed. The selection rules are studied. Numerical results and a discussion are also presented for various radii of the cylindrical

Dielectric functions and energy band gap variation studies of manganese doped Bi{sub 3.25}La{sub 0.75}Ti{sub 3}O{sub 12} thin films using spectroscopic ellipsometry

Energy Technology Data Exchange (ETDEWEB)

Gautam, Prikshit, E-mail: pgautam.phy.du@gmail.com [Department of Physics and Astrophysics, University of Delhi (DU), Delhi 110007 (India); Department of Physics Kirori Mal College, University of Delhi, Delhi 110007 (India); Sachdeva, Anupama [Department of Physics and Astrophysics, University of Delhi (DU), Delhi 110007 (India); Singh, Sushil K. [Functional Materials Division, SSPL, Timarpur, New Delhi 110054 (India); Tandon, R.P., E-mail: ram_tandon@hotmail.com [Department of Physics and Astrophysics, University of Delhi (DU), Delhi 110007 (India)

2014-12-25

Highlights: • Mn Doped Bi{sub 3.25}La{sub 0.75}Ti{sub 3}O{sub 12} (BLT) thin films prepared by chemical solution deposition technique. • Raman spectroscopy of these films shows that Mn{sup 3+} is well substituted at Ti{sup 4+} site. • The optical properties of BLT and Mn modified BLT thin films were investigated by using spectroscopic ellipsometry. • A double Tauc–Lorentz (DTL) dispersion relation was successfully used to model the dielectric functions. • The direct optical band gap (Eg{sup d}) is found to decrease with increase in Mn content. - Abstract: Single phase polycrystalline Mn-modified Bi{sub 3.25}La{sub 0.75}Ti{sub 3}O{sub 12} (BLT) thin films were prepared by chemical solution deposition method using spin coating technique on Pt/Ti/SiO{sub 2}/Si (1 0 0) substrates. Raman spectroscopy of these films shows that Mn{sup 3+} is well substituted at Ti{sup 4+} site. The optical properties of BLT and Mn modified BLT thin films were investigated at room temperature by using spectroscopic ellipsometry (SE) in the energy range 0.72–6.2 eV. A double Tauc–Lorentz (DTL) dispersion relation was successfully used to model the dielectric functions of these films where a shift to the lower energy side with Mn doping is seen. The full width at half maxima (FWHM) (Γ) of dielectric function is found to increase with Mn doping. This increase in FWHM may be attributed to the increase in the trap density in forbidden band which consequently decreases the value of direct optical band gap (Eg{sup d}). The direct optical band gap (Eg{sup d}) is found to decrease with increase in Mn content in the studied composition range. This decrease in Eg{sup d} with doping may be attributed to the variation in the defect concentration present in the structure.

Sr{sub 2}SmNbO{sub 6} perovskite: Synthesis, characterization and density functional theory calculations

Energy Technology Data Exchange (ETDEWEB)

Dutta, Alo, E-mail: alo_dutta@yahoo.com [Department of Condensed Matter Physics and Material Sciences, S. N. Bose National Centre for Basic Sciences, Block-JD, Sector III, Salt Lake, Kolkata, 700106 (India); Mukhopadhyay, P.K. [Department of Condensed Matter Physics and Material Sciences, S. N. Bose National Centre for Basic Sciences, Block-JD, Sector III, Salt Lake, Kolkata, 700106 (India); Sinha, T.P. [Department of Physics, Bose Institute, 93/1 Acharya Prafulla Chandra Road, Kolkata, 700 009 (India); Shannigrahi, Santiranjan [Institute of Materials Research and Engineering, Agency for Science Technology and Research, 3 Research Link, Singapore, 117602 (Singapore); Himanshu, A.K.; Sen, Pintu; Bandyopadhyay, S.K. [Variable Energy Cyclotron Centre, 1/AF Bidhannagar, Kolkata, 700064 (India)

2016-08-15

The density functional theory (DFT) under the generalized gradient approximation (GGA) has been used to investigate the electronic structure of double perovskite oxide Sr{sub 2}SmNbO{sub 6} synthesized by the solid-state reaction technique. The Rietveld refinement of the X-ray diffraction pattern of the sample shows the monoclinic P2{sub 1}/n phase at room temperature. The X-ray photoemission spectrum (XPS) of the material is collected in the energy window of 0–1200 eV. The chemical shift of the constituent elements calculated from the core level XPS spectra is used to analyze the covalency between the O anion and Sm/Nb cations. The valence band (VB) XPS spectrum is compared with the calculated VB spectrum using partial density of states in a standard way. The Raman spectrum is employed to investigate the phonon modes of the material in the monoclinic phase. Lorentzian lines are used to fit the experimental Raman spectrum, which present 24 phonon modes corresponding to the stretching and banding of NbO{sub 6}/SmO{sub 6} octahedra and translational motion of Sr along the Sr−O bond. The discrepancy between the measured and calculated band gap values has been removed by applying modified Becke-Johnson (mBJ) potential in the DFT calculations. The experimental optical band gap obtained from the UV–visible reflectance spectrum is found to be 3.42 eV, which is well matched with the DFT calculated value of 3.2 eV, and suggests the semiconducting nature of the material. The real (ε′) and imaginary (ε″) parts of the optical dielectric constant as a function of energy along the x-, y- and z-polarization directions using mBJ potential are calculated. The collective vibrational modes of the atoms, the Born effective charge of the ions and their effect on the static dielectric constant of the material are studied using DFT. The calculated value of static dielectric constant for SSN is found to be 41.3. - Highlights: • Electronic structure and dynamical

Confinement and surface effects on the physical properties of rhombohedral-shape hematite (α-Fe{sub 2}O{sub 3}) nanocrystals

Energy Technology Data Exchange (ETDEWEB)

Luna, Carlos, E-mail: carlos.lunacd@uanl.edu.mx [Universidad Autónoma de Nuevo León (UANL), Av. Universidad S/N, San Nicolás de los Garza, Nuevo León 66455 (Mexico); Cuan-Guerra, Aída D. [Universidad Autónoma de Nuevo León (UANL), Av. Universidad S/N, San Nicolás de los Garza, Nuevo León 66455 (Mexico); Barriga-Castro, Enrique D. [Centro de Investigación en Química Aplicada (CIQA), Blvd. Enrique Reyna Hermosillo No. 140, Saltillo, 25294 Coahuila (Mexico); Núñez, Nuria O. [Instituto de Ciencia de Materiales de Sevilla (ICMS), CSIC-US, Avda. Americo Vespucio n° 49, Isla de la Cartuja, 41092 Sevilla (Spain); Mendoza-Reséndez, Raquel [Universidad Autónoma de Nuevo León (UANL), Av. Universidad S/N, San Nicolás de los Garza, Nuevo León 66455 (Mexico)

2016-08-15

Highlights: • Uniform rhombohedral hematite nanocrystals (RHNCs) have been obtained. • A detailed formation mechanism of these HNCS has been proposed. • Phonon confinement effects were revealed in the RHNCS vibrational bands. • Quantum confinement effects on the optical and electronic properties were found. - Abstract: Morphological, microstructural and vibrational properties of hematite (α-Fe{sub 2}O{sub 3}) nanocrystals with a rhombohedral shape and rounded edges, obtained by forced hydrolysis of iron(III) solutions under a fast nucleation, have been investigated in detail as a function of aging time. These studies allowed us to propose a detailed formation mechanism and revealed that these nanocrystals are composed of four {104} side facets, two {110} faces at the edges of the long diagonal of the nanocrystals and two {−441} facets as the top and bottom faces. Also, the presence of nanoscopic pores and fissures was evidenced. The vibrational bands of such nanocrystals were shifted to lower frequencies in comparison with bulk hematite ones as the nanocrystal size was reduced due to phonon confinement effects. Also, the indirect and direct transition band gaps displayed interesting dependences on the aging time arising from quantum confinement and surface effects.

Band gap narrowing and fluorescence properties of nickel doped SnO{sub 2} nanoparticles

Energy Technology Data Exchange (ETDEWEB)

Ahmed, Arham S; Shafeeq, M Muhamed [Centre of Excellence in Materials Science (Nanomaterials), Department of Applied Physics, Z. H. College of Engineering and Technology, Aligarh Muslim University, Aligarh-202002 (India); Singla, M L [Central Scientific Instruments Organization (CSIO), Council of Scientific and Industrial Research (CSIR), Materials Research and Bio-Nanotechnology Division, Sector - 30/C, Chandigarh-160030 (India); Tabassum, Sartaj [Department of Chemistry, Aligarh Muslim University, Aligarh-202002 (India); Naqvi, Alim H [Centre of Excellence in Materials Science (Nanomaterials), Department of Applied Physics, Z. H. College of Engineering and Technology, Aligarh Muslim University, Aligarh-202002 (India); Azam, Ameer [Centre of Excellence in Materials Science (Nanomaterials), Department of Applied Physics, Z. H. College of Engineering and Technology, Aligarh Muslim University, Aligarh-202002 (India)

2011-01-15

Nickel-doped tin oxide nanoparticles (sub-5 nm size) with intense fluorescence emission behavior have been synthesized by sol-gel route. The structural and compositional analysis has been carried out by using XRD, TEM, FESEM and EDAX. The optical absorbance spectra indicate a band gap narrowing effect and it was found to increase with the increase in nickel concentration. The band gap narrowing at low dopant concentration (<5%) can be assigned to SnO{sub 2}-SnO{sub 2-x} alloying effect and for higher doping it may be due to the formation of defect sub-bands below the conduction band.

Phonon and thermal properties of exfoliated TaSe{sub 2} thin films

Energy Technology Data Exchange (ETDEWEB)

Yan, Z.; Jiang, C.; Renteria, J. [Nano-Device Laboratory, Department of Electrical Engineering, Bourns College of Engineering, University of California–Riverside, Riverside, California 92521 (United States); Pope, T. R.; Tsang, C. F.; Stickney, J. L.; Salguero, T. T., E-mail: salguero@uga.edu, E-mail: balandin@ee.ucr.edu [Department of Chemistry, University of Georgia, Athens, Georgia 30602 (United States); Goli, P. [Materials Science and Engineering Program, Bourns College of Engineering, University of California–Riverside, Riverside, California 92521 (United States); Balandin, A. A., E-mail: salguero@uga.edu, E-mail: balandin@ee.ucr.edu [Nano-Device Laboratory, Department of Electrical Engineering, Bourns College of Engineering, University of California–Riverside, Riverside, California 92521 (United States); Materials Science and Engineering Program, Bourns College of Engineering, University of California–Riverside, Riverside, California 92521 (United States)

2013-11-28

We report on the phonon and thermal properties of thin films of tantalum diselenide (2H-TaSe{sub 2}) obtained via the “graphene-like” mechanical exfoliation of crystals grown by chemical vapor transport. The ratio of the intensities of the Raman peak from the Si substrate and the E{sub 2g} peak of TaSe{sub 2} presents a convenient metric for quantifying film thickness. The temperature coefficients for two main Raman peaks, A{sub 1g} and E{sub 2g}, are −0.013 and −0.0097 cm{sup −1}/{sup o}C, respectively. The Raman optothermal measurements indicate that the room temperature thermal conductivity in these films decreases from its bulk value of ∼16 W/mK to ∼9 W/mK in 45-nm thick films. The measurement of electrical resistivity of the field-effect devices with TaSe{sub 2} channels shows that heat conduction is dominated by acoustic phonons in these van der Waals films. The scaling of thermal conductivity with the film thickness suggests that the phonon scattering from the film boundaries is substantial despite the sharp interfaces of the mechanically cleaved samples. These results are important for understanding the thermal properties of thin films exfoliated from TaSe{sub 2} and other metal dichalcogenides, as well as for evaluating self-heating effects in devices made from such materials.

Electronic, magnetic and optical properties of reduced hybrid layered complex Ni(pyz)V{sub 4}O{sub 10} (pyz=C{sub 4}H{sub 4}N{sub 2}) by first-principles

Energy Technology Data Exchange (ETDEWEB)

Munir, Junaid; Mat Isa, Ahmad Radzi [Physics Department, Faculty of Science, Universiti Teknologi Malaysia, Skudai 81310, Johor (Malaysia); Yousaf, Masood [IBS Center for Multidimensional Carbon Materials, Ulsan National Institute of Science and Technology, Ulsan 689-798 (Korea, Republic of); Aliabad, H.A. Rahnamaye [Department of Physics, Hakim Sabzevari University (Iran, Islamic Republic of); Ain, Qurat-ul [Key Laboratory for Laser Plasamas (MOE) & Department of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai 200240 (China); Saeed, M.A., E-mail: saeed@utm.my [Physics Department, Faculty of Science, Universiti Teknologi Malaysia, Skudai 81310, Johor (Malaysia)

2016-10-15

This article reports the electronic, structure, magnetic and optical properties of reduced hybrid layered complex Ni(pyz)V{sub 4}O{sub 10} (pyz=C{sub 4}H{sub 4}N{sub 2}) studied by employing density functional theory with local density approximation (LDA), generalized gradient approximation (GGA) of Perdew–Burke–Ernzerhof-96 (PBE) and modified Becke–Johnson (mBJ) exchange-correlation potential and energy. The band structure and density of states of these compounds are also presented. The total density of states (DOS) for up and down spin states clearly split, which means that the exchange interaction causes the ordered spin arrangement. PBE-mBJ calculation reveals a wider band gap in spin down state, which shows a half-metallic electronic character at the equilibrium state. The spin-polarized calculations indicate metallic nature in orthorhombic crystalline phase. It is also noted that the optical conductivity for PBE-mBJ is larger than that of LDA and PBE-GGA. Furthermore, the results show a half-metallic ferromagnetic ground state for Ni(pyz)V{sub 4}O{sub 10} in PBE-mBJ potential. The present results suggest Ni(pyz)V{sub 4}O{sub 10} compound as a potential candidate for the future optoelectronic and spintronic applications. - Highlights: • First study of the electronic, structure, magnetic and optical properties of reduced hybrid layered complex Ni(pyz)V{sub 4}O{sub 10} (pyz=C{sub 4}H{sub 4}N{sub 2}) by first principles. • PBE-mBJ calculation reveals a wider band gap in spin down state indicating its half-metallic electronic character. • The large spin magnetic moment on Ni and V cations indicates the ferromagnetic interaction which makes this compound suitable candidate for spintronics applications. • An optical band gap reveals that this compound is also useful for the application in optoelectronics.

Effect of Sn on the optical band gap determined using absorption spectrum fitting method

Energy Technology Data Exchange (ETDEWEB)

Heera, Pawan, E-mail: sramanb70@mailcity.com [Department of Physics, Himachal Pradesh University, Shimla, INDIA, 171005 (India); Govt. College Amb, Himachal Pradesh, INDIA,177203 (India); Kumar, Anup, E-mail: kumar.anup.sml@gmail.com [Department of Physics, Himachal Pradesh University, Shimla, INDIA, 171005 (India); Physics Department, Govt. College, Kullu, H. P., INDIA, 175101 (India); Sharma, Raman, E-mail: pawanheera@yahoo.com [Department of Physics, Himachal Pradesh University, Shimla, INDIA, 171005 (India)

2015-05-15

We report the preparation and the optical studies on tellurium rich glasses thin films. The thin films of Se{sub 30}Te{sub 70-x} Sn{sub x} system for x= 0, 1.5, 2.5 and 4.5 glassy alloys prepared by melt quenching technique are deposited on the glass substrate using vacuum thermal evaporation technique. The analysis of absorption spectra in the spectral range 400nm–4000 nm at room temperature obtained from UV-VIS-NIR spectrophotometer [Perkin Elmer Lamda-750] helps us in the optical characterization of the thin films under study. The absorption spectrum fitting method is applied by using the Tauc’s model for estimating the optical band gap and the width of the band tail of the thin films. The optical band gap is calculated and is found to decrease with the Sn content.

From Ba{sub 3}Ta{sub 5}O{sub 14}N to LaBa{sub 2}Ta{sub 5}O{sub 13}N{sub 2}: Decreasing the optical band gap of a photocatalyst

Energy Technology Data Exchange (ETDEWEB)

Anke, B. [Institut für Chemie, Technische Universität Berlin, Straße des 17. Juni 135, 10623 Berlin (Germany); Bredow, T. [Mulliken Center for Theoretical Chemistry, Institut für Physikalische und Theoretische Chemie, Universität Bonn, Beringstr. 4, 53115 Bonn (Germany); Pilarski, M.; Wark, M. [Institut für Chemie, Carl von Ossietzky Universität Oldenburg, Carl-von-Ossietzky-Str. 9-11, 26129 Oldenburg (Germany); Lerch, M., E-mail: martin.lerch@tu-berlin.de [Institut für Chemie, Technische Universität Berlin, Straße des 17. Juni 135, 10623 Berlin (Germany)

2017-02-15

Yellow LaBa{sub 2}Ta{sub 5}O{sub 13}N{sub 2} was successfully synthesized as phase-pure material crystallizing isostructurally to previously reported Ba{sub 3}Ta{sub 5}O{sub 14}N and mixed-valence Ba{sub 3}Ta{sup V}{sub 4}Ta{sup IV}O{sub 15}. The electronic structure of LaBa{sub 2}Ta{sub 5}O{sub 13}N{sub 2} was studied theoretically with the range-separated hybrid method HSE06. The most stable structure was obtained when lanthanum was placed on 2a and nitrogen on 4h sites confirming Pauling's second rule. By incorporating nitrogen, the measured band gap decreases from ∼3.8 eV for the oxide via 2.74 eV for Ba{sub 3}Ta{sub 5}O{sub 14}N to 2.63 eV for the new oxide nitride, giving rise to an absorption band well in the visible-light region. Calculated fundamental band gaps confirm the experimental trend. The atom-projected density of states has large contributions from N2p orbitals close to the valence band edge. These are responsible for the observed band gap reduction. Photocatalytic hydrogen formation was investigated and compared with that of Ba{sub 3}Ta{sub 5}O{sub 14}N revealing significantly higher activity for LaBa{sub 2}Ta{sub 5}O{sub 13}N{sub 2} under UV-light. - Graphical abstract: X-ray powder diffraction pattern of LaBa{sub 2}Ta{sub 5}O{sub 13}N{sub 2} with the results of the Rietveld refinements. Inset: Unit cell of LaBa{sub 2}Ta{sub 5}O{sub 13}N{sub 2} and polyhedral representation of the crystal structure. - Highlights: • Synthesis of a new oxide nitride LaBa{sub 2}Ta{sub 5}O{sub 13}N{sub 2}. • Refinement of the crystal structure. • Quantum chemical calculations provided band gap close to the measured value. • New phase shows a higher photocatalytic H{sub 2} evolution rate compared to prior tested Ba{sub 3}Ta{sub 5}O{sub 14}N.

Experimental and first principles investigation of the multiferroics BiFeO{sub 3} and Bi{sub 0.9}Ca{sub 0.1}FeO{sub 3}: Structure, electronic, optical and magnetic properties

Energy Technology Data Exchange (ETDEWEB)

Gao, Ning; Quan, Chuye [Key Laboratory for Organic Electronics & Information Displays (KLOEID), Synergetic Innovation Center for Organic Electronics and Information Displays (SICOEID), Institute of Advanced Materials - IAM, School of Materials Science and Engineering - SMSE, Nanjing University of Posts and Telecommunications - NUPT, Nanjing 210023 (China); Ma, Yuhui [Key Laboratory for Organic Electronics & Information Displays (KLOEID), Synergetic Innovation Center for Organic Electronics and Information Displays (SICOEID), Institute of Advanced Materials - IAM, School of Materials Science and Engineering - SMSE, Nanjing University of Posts and Telecommunications - NUPT, Nanjing 210023 (China); School of Science, Nanjing University of Posts and Telecommunications (NUPT), Nanjing 210023 (China); Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), National Synergistic Innovation Center for Advanced Materials - SICAM, Nanjing Tech University - Nanjing Tech, 30 South Puzhu Road, Nanjing 211816 (China); Han, Yumin; Wu, Zhenli [Key Laboratory for Organic Electronics & Information Displays (KLOEID), Synergetic Innovation Center for Organic Electronics and Information Displays (SICOEID), Institute of Advanced Materials - IAM, School of Materials Science and Engineering - SMSE, Nanjing University of Posts and Telecommunications - NUPT, Nanjing 210023 (China); Mao, Weiwei [Key Laboratory for Organic Electronics & Information Displays - KLOEID, Synergetic Innovation Center for Organic Electronics and Information Displays (SICOEID), Institute of Advanced Materials (IAM), School of Materials Science and Engineering - SMSE, Nanjing University of Posts and Telecommunications - NUPT, Nanjing 210023 (China); School of Science, Nanjing University of Posts and Telecommunications (NUPT), Nanjing 210023 (China); and others

2016-01-15

We propose first-principles methods to study the structure, electronic, optical and magnetic properties of BiFeO{sub 3} (BFO) and Bi{sub 0.9}Ca{sub 0.1}FeO{sub 3} (BCFO). The morphology, optical band gap as well as magnetic hysteresis also have been investigated using experimental methods. X-ray diffraction data shows that Bi-site doping with Ca could result in a transition of crystal structure (from single phase rhombohedral (R3c) to two phase coexistence). Changing of Fermi level and decreasing of band gap indicating that the Ca-doped BFO exhibit a typical half-metallic nature. The optical absorption properties are related to the electronic structure and play the key role in determining their band gaps, also we have analyzed the inter-band contribution to the theory of optical properties such as absorption spectra, dielectric constant, energy-loss spectrum, absorption coefficient, optical reflectivity, and refractive index of BCFO. Enhancement of magnetic properties after doping is proved by both experimental and calculated result, which can be explained by size effect and structural distortion.

Characteristic features of optical absorption for Gd{sub 2}O{sub 3} and NiO nanoparticles

Energy Technology Data Exchange (ETDEWEB)

Zatsepin, A. F.; Kuznetsova, Yu. A., E-mail: iu.a.kuznetsova@urfu.ru; Rychkov, V. N. [Ural Federal University (Russian Federation); Sokolov, V. I. [Ural Branch of Russian Academy of Science, Institute of Metal Physics (Russian Federation)

2017-03-15

The technical approach to determination of the structural and optical parameters of oxides with reduced dimensionality based on optical absorption measurements is described by example of gadolinium and nickel oxides. It was established that the temperature behavior of fundamental absorption edge for oxide nanoparticles is similar with the bulk materials with crystal structure. At the same time, the energy characteristics (band gap and effective phonon energies) for low-dimensional oxides are found to be significantly different from their bulk counterparts. The presented methodological method to obtain of qualitative and quantitative correlations of structural and optical characteristics provides novel reliable knowledge of nanoscaled 3d and 4f–metal oxide materials that is useful for development of their practical applications.

Electronic band structure and optical properties of antimony selenide under pressure

Energy Technology Data Exchange (ETDEWEB)

Abhijit, B.K.; Jayaraman, Aditya; Molli, Muralikrishna, E-mail: muralikrishnamolli@sssihl.edu.in [Department of Physics, Sri Sathya Sai Institute of Higher Learning, Prasanthinilayam, 515 134 (India)

2016-05-23

In this work we present the optical properties of Antimony Selenide (Sb{sub 2}Se{sub 3}) under ambient conditions and under pressure of 9.2 GPa obtained using first principles calculations. We investigated the electronic band structure using the FP-LAPW method within the sphere of the density functional theory. Optical properties like refractive index, absorption coefficient and optical conductivity are calculated using the WIEN2k code.

Optically stimulated luminescence (OSL) from Ag-doped Li{sub 2}B{sub 4}O{sub 7} crystals

Energy Technology Data Exchange (ETDEWEB)

Kananen, B.E.; Maniego, E.S.; Golden, E.M.; Giles, N.C.; McClory, J.W. [Department of Engineering Physics, Air Force Institute of Technology, Wright-Patterson Air Force Base, OH 45433 (United States); Adamiv, V.T.; Burak, Ya.V. [Vlokh Institute of Physical Optics, Dragomanov 23, L’viv 79005 (Ukraine); Halliburton, L.E., E-mail: Larry.Halliburton@mail.wvu.edu [Department of Physics and Astronomy, West Virginia University, Morgantown, WV 26506 (United States)

2016-09-15

Optically stimulated luminescence (CW-OSL) is observed from Ag-doped lithium tetraborate (Li{sub 2}B{sub 4}O{sub 7}) crystals. Photoluminescence, optical absorption, and electron paramagnetic resonance (EPR) are used to identify the defects participating in the OSL process. As-grown crystals have Ag{sup +} ions substituting for Li{sup +} ions. They also have Ag{sup +} ions occupying interstitial sites. During a room-temperature exposure to ionizing radiation, holes are trapped at the Ag{sup +} ions that replace Li{sup +} ions and electrons are trapped at the interstitial Ag{sup +} ions, i.e., the radiation forms Ag{sup 2+} (4d{sup 9}) ions and Ag{sup 0} (4d{sup 10}5s{sup 1}) atoms. These Ag{sup 2+} and Ag{sup 0} centers have characteristic EPR spectra. The Ag{sup 0} centers also have a broad optical absorption band peaking near 370 nm. An OSL response is observed when the stimulation wavelength overlaps this absorption band. Specifically, stimulation with 400 nm light produces an intense OSL response when emission is monitored near 270 nm. Electrons optically released from the Ag{sup 0} centers recombine with holes trapped at Ag{sup 2+} ions to produce the ultraviolet emission. The OSL response is progressively smaller as the stimulation light is moved to longer wavelengths (i.e., away from the 370 nm peak of the absorption band of the Ag{sup 0} electron traps). Oxygen vacancies are also present in the Ag-doped Li{sub 2}B{sub 4}O{sub 7} crystals, and their role in the OSL process as a secondary relatively short-lived electron trap is described.

Interband optical absorption in the Wannier-Stark ladder under the electron-LO-phonon resonance condition

International Nuclear Information System (INIS)

Govorov, A.O.

1993-08-01

Interband optical absorption in the Wannier-Stark ladder in the presence of the electron-LO-phonon resonance is investigated theoretically. The electron-LO-phonon resonance occurs when the energy spacing between adjacent Stark-ladder levels coincides with the LO-phonon energy. We propose a model describing the polaron effect in a superlattice. Calculations show that the absorption line shape is strongly modified due to the polaron effect under the electron-LO-phonon resonance condition. We consider optical phenomena in a normal magnetic field that leads to enhancement of polaron effects. (author). 17 refs, 5 figs

Electronic states and phonon properties of Ge{sub x}Si{sub 1−x} nanostructures

Energy Technology Data Exchange (ETDEWEB)

Zhao, P.Q. [Department of Applied Physics, Nanjing Tech University, Nanjing 211816 (China); National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093 (China); Liu, L.Z. [National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093 (China); Yang, Y.M. [Department of Physics, Southern University, Nanjing 210096 (China); Wu, X.L., E-mail: hkxlwu@nju.edu.cn [National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093 (China); Department of Physics, NingBo University, NingBo 3153001 (China)

2015-07-15

Ge{sub x}Si{sub 1−x} nanostructures that can be manipulated through size reduction, geometry variation, and alloying, are considered as one of the key developments for next generation technologies, due to their easy processing, unique properties, and compatibility with the existent silicon-based microelectronic industry. In this review, we have thoroughly discussed the major advances in electronic structures and phonon properties of Ge{sub x}Si{sub 1−x} nanocrystals (NCs). Experimental and theoretical characterization related to several main factors, for example, size, composition, strain, temperature, and interface and surface were presented with special emphasis in low-frequency Raman scattering. Current difficulties in explaining the Raman spectra are the assignment of the low-frequency modes because of the complexity of the environment around the NCs, thus different theoretical models are introduced in detail to deal with different properties of Ge{sub x}Si{sub 1−x} alloy NCs including Lamb’s theory, complex-frequency (CF) model, core–shell matrix (CMS) model and spatial coherence effect model. - Highlights: • Major advances in electronic structures and phonon properties of Ge{sub x}Si{sub 1−x} nanocrystals are discussed thoroughly. • Experimental and theoretical characterization related to size, composition, strain, temperature, and interface/surface are elucidated. • Low-frequency Raman spectra are specially described based on spatial coherence effect model.

Demonstration of suppressed phonon tunneling losses in phononic bandgap shielded membrane resonators for high-Q optomechanics.

Science.gov (United States)

Tsaturyan, Yeghishe; Barg, Andreas; Simonsen, Anders; Villanueva, Luis Guillermo; Schmid, Silvan; Schliesser, Albert; Polzik, Eugene S

2014-03-24

Dielectric membranes with exceptional mechanical and optical properties present one of the most promising platforms in quantum opto-mechanics. The performance of stressed silicon nitride nanomembranes as mechanical resonators notoriously depends on how their frame is clamped to the sample mount, which in practice usually necessitates delicate, and difficult-to-reproduce mounting solutions. Here, we demonstrate that a phononic bandgap shield integrated in the membrane's silicon frame eliminates this dependence, by suppressing dissipation through phonon tunneling. We dry-etch the membrane's frame so that it assumes the form of a cm-sized bridge featuring a 1-dimensional periodic pattern, whose phononic density of states is tailored to exhibit one, or several, full band gaps around the membrane's high-Q modes in the MHz-range. We quantify the effectiveness of this phononic bandgap shield by optical interferometry measuring both the suppressed transmission of vibrations, as well as the influence of frame clamping conditions on the membrane modes. We find suppressions up to 40 dB and, for three different realized phononic structures, consistently observe significant suppression of the dependence of the membrane's modes on sample clamping-if the mode's frequency lies in the bandgap. As a result, we achieve membrane mode quality factors of 5 × 10(6) with samples that are tightly bolted to the 8 K-cold finger of a cryostat. Q × f -products of 6 × 10(12) Hz at 300 K and 14 × 10(12) Hz at 8 K are observed, satisfying one of the main requirements for optical cooling of mechanical vibrations to their quantum ground-state.

Temperature-Induced Large Broadening and Blue Shift in the Electronic Band Structure and Optical Absorption of Methylammonium Lead Iodide Perovskite.

Science.gov (United States)

Yang, Jia-Yue; Hu, Ming

2017-08-17

The power conversion efficiency of hybrid halide perovskite solar cells is profoundly influenced by the operating temperature. Here we investigate the temperature influence on the electronic band structure and optical absorption of cubic CH 3 NH 3 PbI 3 from first-principles by accounting for both the electron-phonon interaction and thermal expansion. Within the framework of density functional perturbation theory, the electron-phonon coupling induces slightly enlarged band gap and strongly broadened electronic relaxation time as temperature increases. The large broadening effect is mainly due to the presence of cation organic atoms. Consequently, the temperature-dependent absorption peak exhibits blue-shift position, decreased amplitude, and broadened width. This work uncovers the atomistic origin of temperature influence on the optical absorption of cubic CH 3 NH 3 PbI 3 and can provide guidance to design high-performance hybrid halide perovskite solar cells at different operating temperatures.

Engineering the hypersonic phononic band gap of hybrid Bragg stacks.

Science.gov (United States)

Schneider, Dirk; Liaqat, Faroha; El Boudouti, El Houssaine; El Hassouani, Youssef; Djafari-Rouhani, Bahram; Tremel, Wolfgang; Butt, Hans-Jürgen; Fytas, George

2012-06-13

We report on the full control of phononic band diagrams for periodic stacks of alternating layers of poly(methyl methacrylate) and porous silica combining Brillouin light scattering spectroscopy and theoretical calculations. These structures exhibit large and robust on-axis band gaps determined by the longitudinal sound velocities, densities, and spacing ratio. A facile tuning of the gap width is realized at oblique incidence utilizing the vector nature of the elastic wave propagation. Off-axis propagation involves sagittal waves in the individual layers, allowing access to shear moduli at nanoscale. The full theoretical description discerns the most important features of the hypersonic one-dimensional crystals forward to a detailed understanding, a precondition to engineer dispersion relations in such structures.

Strong Energy-momentum Dispersion of Phonon Dressed Carriers in the Lightly Doped Band Insulator SrTiO3

International Nuclear Information System (INIS)

Meevasana, Warawat

2010-01-01

Much progress has been made recently in the study of the effects of electron-phonon (el-ph) coupling in doped insulators using angle resolved photoemission (ARPES), yielding evidence for the dominant role of el-ph interactions in underdoped cuprates. As these studies have been limited to doped Mott insulators, the important question arises how this compares with doped band insulators where similar el-ph couplings should be at work. The archetypical case is the perovskite SrTiO 3 (STO), well known for its giant dielectric constant of 10000 at low temperature, exceeding that of La 2 CuO 4 by a factor of 500. Based on this fact, it has been suggested that doped STO should be the archetypical bipolaron superconductor. Here we report an ARPES study from high-quality surfaces of lightly doped SrTiO 3 . Comparing to lightly doped Mott insulators, we find the signatures of only moderate electron-phonon coupling: a dispersion anomaly associated with the low frequency optical phonon with a λ(prime) ∼ 0.3 and an overall bandwidth renormalization suggesting an overall λ(prime) ∼ 0.7 coming from the higher frequency phonons. Further, we find no clear signatures of the large pseudogap or small polaron phenomena. These findings demonstrate that a large dielectric constant itself is not a good indicator of el-ph coupling and highlight the unusually strong effects of the el-ph coupling in doped Mott insulators.

Theoretical study of negative thermal expansion mechanism of ZnF{sub 2}

Energy Technology Data Exchange (ETDEWEB)

Wang, Lei [Center for Clean Energy and Quantum Structures, Zhengzhou University, Zhengzhou 450001 (China); Yuan, Peng-Fei; Wang, Fei; Sun, Qiang [Center for Clean Energy and Quantum Structures, Zhengzhou University, Zhengzhou 450001 (China); School of Physics and Engineering, Zhengzhou University, Zhengzhou 450052 (China); Liang, Er-Jun, E-mail: ejliang@zzu.edu.cn [Center for Clean Energy and Quantum Structures, Zhengzhou University, Zhengzhou 450001 (China); School of Physics and Engineering, Zhengzhou University, Zhengzhou 450052 (China); Jia, Yu, E-mail: jiay@zzu.edu.cn [Center for Clean Energy and Quantum Structures, Zhengzhou University, Zhengzhou 450001 (China); School of Physics and Engineering, Zhengzhou University, Zhengzhou 450052 (China)

2012-05-15

Graphical abstract: ZnF{sub 2} owns open-framework structure and its negative thermal expansion (NTE) properties have been confirmed using a first-principles calculation. According to the phonon eigenvectors and group theory analysis, the lowest frequency (48.9 cm{sup -1}, B{sub 1g} mode) rigid unit mode (RUM) of ZnF{sub 6} causes a rotary coupling between two adjacent octahedrons and makes the Zn-Zn distance shorter, which is considered to be most responsible for the NTE properties of ZnF{sub 2}. Highlights: Black-Right-Pointing-Pointer The NTE properties of ZnF{sub 2} are confirmed using a first-principles calculation. Black-Right-Pointing-Pointer Phonon mode classification and Grueneisen parameters are systematically presented. Black-Right-Pointing-Pointer The rigid unit mode causes a rotary coupling and makes the Zn-Zn distance shorter. Black-Right-Pointing-Pointer The optical branch with the lowest frequency is most responsible for the NTE. -- Abstract: ZnF{sub 2} is reported to exhibit negative thermal expansion (NTE) at lower temperatures very recently. In this article, we present the electronic and NTE properties of ZnF{sub 2} using a first-principles calculation. Our results show that ZnF{sub 2} is an insulator with a direct band gap and a strong hybridization occurs between Zn-3p, 4s and F-2p states. The related calculations on NTE properties are obtained within the quasi-harmonic approximation. The resulting relationship between volume and temperature confirms the NTE properties. Besides, we discuss the NTE mechanism in accordance to phonon vibrational modes. The phonon vibrational modes contributing to the NTE are singled out by Grueneisen parameters and all these modes are low-frequency optical phonons. The lowest frequency rigid unit mode (RUM) of ZnF{sub 6} causes a rotary coupling between two adjacent octahedrons and makes the Zn-Zn distance shorter, which is most responsible for the NTE properties of ZnF{sub 2}.

Electronic, bonding, linear and non-linear optical properties of novel Li{sub 2}Ga{sub 2}GeS{sub 6} compound

Energy Technology Data Exchange (ETDEWEB)

Khan, Wilayat, E-mail: wkhan@ntc.zcu.cz [New Technologies – Research Center, University of West Bohemia, Univerzitni 8, Pilsen 306 14 (Czech Republic); Murtaza, G., E-mail: murtaza@icp.edu.pk [Department of Physics, Islamia College Peshawar, KPK (Pakistan); Ouahrani, T. [Laboratoire de Physique Théorique, B.P. 230, Université de Tlemcen, Tlemcen 13000 (Algeria); École Préparatoire en Sciences et Techniques, BP 165 R.P., 13000 Tlemcen (Algeria); Mahmood, Asif [College of Engineering, Chemical Engineering Department, King Saud University Riyadh (Saudi Arabia); Khenata, R.; El Amine Monir, Mohammed; Baltache, H. [Laboratoire de Physique Quantique, de la Matière et de la Modélisation Mathématique (LPQ3M), Université de Mascara, Mascara 29000 (Algeria)

2016-07-25

Recently a new sulphide compound Li{sub 2}Ga{sub 2}GeS{sub 6} was synthesized. It has attracted great attention due to its nonlinear optical properties. Quite surprisingly no theoretical study yet been reported on the physical properties of this important material. We have paid attention to study the electronic and optical properties of Li{sub 2}Ga{sub 2}GeS{sub 6} using first principles techniques of density functional theory. Different exchange-correlation techniques have been applied to study these properties. From local density and generalized gradient approximations the compound is predicted to be direct bandgap. However the band gap is indirect when calculated through the Engle–Vosko and modified Becke–Johnson potentials. Therefore the bandgap of the compound is pseudo direct (direct and indirect band gaps are very close). In optical properties dielectric function, refractive index, reflectivity and absorption coefficient were studied. Furthermore, the second harmonic generation properties of the compound are predicted. - Highlights: • Li{sub 2}Ga{sub 2}GeS{sub 6} studied for the first time using first principles calculations. • Different exchange correlation potentials have been adopted for the calculations. • Bandgap of the compound is pseudo direct. • Optical structures are prominent in the low frequency ultraviolet region. • The lone pair basins seem to have a non-negligible role in the optical properties.

Electron mobility limited by optical phonons in wurtzite InGaN/GaN core-shell nanowires

Science.gov (United States)

Liu, W. H.; Qu, Y.; Ban, S. L.

2017-09-01

Based on the force-balance and energy-balance equations, the optical phonon-limited electron mobility in InxGa1-xN/GaN core-shell nanowires (CSNWs) is discussed. It is found that the electrons tend to distribute in the core of the CSNWs due to the strong quantum confinement. Thus, the scattering from first kind of the quasi-confined optical (CO) phonons is more important than that from the interface (IF) and propagating (PR) optical phonons. Ternary mixed crystal and size effects on the electron mobility are also investigated. The results show that the PR phonons exist while the IF phonons disappear when the indium composition x < 0.047, and vice versa. Accordingly, the total electron mobility μ first increases and then decreases with indium composition x, and reaches a peak value of approximately 3700 cm2/(V.s) when x = 0.047. The results also show that the mobility μ increases as increasing the core radius of CSNWs due to the weakened interaction between the electrons and CO phonons. The total electron mobility limited by the optical phonons exhibits an obvious enhancement as decreasing temperature or increasing line electron density. Our theoretical results are expected to be helpful to develop electronic devices based on CSNWs.

Optical characteristics of BaGa{sub 2}S{sub 4}:Ho{sup 3+} and BaGa{sub 2}Se{sub 4}:Ho{sup 3+} single crystals

Energy Technology Data Exchange (ETDEWEB)

Choe, Sung-Hyu [Chosun University, Kwangju (Korea, Republic of); Jin, Moon-Seog [Dongshin University, Naju (Korea, Republic of); Kim, Wha-Tek [Chonnam National University, Kwangju (Korea, Republic of)

2005-11-15

BaGa{sub 2}S{sub 4}, BaGa{sub 2}S{sub 4}:Ho{sup 3+}, BaGa{sub 2}Se{sub 4}, and BaGa{sub 2}Se{sub 4}:Ho{sup 3+} single crystals were grown by using the chemical transport reaction method. The optical energy gaps of the single crystals were investigated in the temperature region from 11 K to 300 K. The temperature dependence of the optical energy gap was well fitted by the Varshni equation. Two broad emission bands were observed in the photoluminescence spectra of the single crystals. These bands were attributed to donor-acceptor pair recombinations. Sharp emission peaks were observed in the BaGa{sub 2}S{sub 4}:Ho{sup 3+} and the BaGa{sub 2}Se{sub 4}:Ho{sup 3+} single crystals and were assigned to radiation recombination between split Stark levels of Ho{sup 3+}.

Effect of Holstein phonons on the electronic properties of graphene

International Nuclear Information System (INIS)

Stauber, T; Peres, N M R

2008-01-01

We obtain the self-energy of the electronic propagator due to the presence of Holstein polarons within the first Born approximation. This leads to a renormalization of the Fermi velocity of 1%. We further compute the optical conductivity of the system at the Dirac point and at finite doping within the Kubo formula. We argue that the effects due to Holstein phonons are negligible and that the Boltzmann approach, which does not include inter-band transitions and can thus not treat optical phonons due to their high energy of ℎω 0 ∼ 0.1-0.2 eV, remains valid

High-speed asynchronous optical sampling for high-sensitivity detection of coherent phonons

International Nuclear Information System (INIS)

Dekorsy, T; Taubert, R; Hudert, F; Schrenk, G; Bartels, A; Cerna, R; Kotaidis, V; Plech, A; Koehler, K; Schmitz, J; Wagner, J

2007-01-01

A new optical pump-probe technique is implemented for the investigation of coherent acoustic phonon dynamics in the GHz to THz frequency range which is based on two asynchronously linked femtosecond lasers. Asynchronous optical sampling (ASOPS) provides the performance of on all-optical oscilloscope and allows us to record optically induced lattice dynamics over nanosecond times with femtosecond resolution at scan rates of 10 kHz without any moving part in the set-up. Within 1 minute of data acquisition time signal-to-noise ratios better than 10 7 are achieved. We present examples of the high-sensitivity detection of coherent phonons in superlattices and of the coherent acoustic vibration of metallic nanoparticles

Electronic structure and optical properties of noncentrosymmetric LiGaGe{sub 2}Se{sub 6}, a promising nonlinear optical material

Energy Technology Data Exchange (ETDEWEB)

Lavrentyev, A.A.; Gabrelian, B.V.; Vu, V.T.; Ananchenko, L.N. [Department of Electrical Engineering and Electronics, Don State Technical University, 1 Gagarin Square, 344010 Rostov-on-Don (Russian Federation); Isaenko, L.I. [Laboratory of Crystal Growth, Institute of Geology and Mineralogy, SB RAS, 43 Russkaya Street, 630090 Novosibirsk (Russian Federation); Laboratory of Semiconductor and Dielectric Materials, Novosibirsk State University, 2 Pirogova Street, 630090 Novosibirsk (Russian Federation); Yelisseyev, A.; Krinitsin, P.G. [Laboratory of Crystal Growth, Institute of Geology and Mineralogy, SB RAS, 43 Russkaya Street, 630090 Novosibirsk (Russian Federation); Khyzhun, O.Y., E-mail: khyzhun@ipms.kiev.ua [Frantsevych Institute for Problems of Materials Science, National Academy of Sciences of Ukraine, 3 Krzhyzhanivsky Street, UA-03142 Kyiv (Ukraine)

2016-11-15

X-ray photoelectron core-level and valence-band spectra are measured for pristine and Ar{sup +} ion-bombarded surfaces of LiGaGe{sub 2}Se{sub 6} single crystal grown by Bridgman-Stockbarger technique. Further, electronic structure of LiGaGe{sub 2}Se{sub 6} is elucidated from both theoretical and experimental viewpoints. Density functional theory (DFT) calculations are made using the augmented plane wave +local orbitals (APW+lo) method to study total and partial densities of states in the LiGaGe{sub 2}Se{sub 6} compound. The present calculations indicate that the principal contributors to the valence band are the Se 4p states: they contribute mainly at the top and in the central portion of the valence band of LiGaGe{sub 2}Se{sub 6}, with also their significant contributions in its lower portion. The Ge 4s and Ge 4p states are among other significant contributors to the valence band of LiGaGe{sub 2}Se{sub 6}, contributing mainly at the bottom and in the central portion, respectively. In addition, the calculations indicate that the bottom of the conduction band is composed mainly from the unoccupied Ge s and Se p states. The present DFT calculations are supported experimentally by comparison on a common energy scale of the X-ray emission bands representing the energy distribution of the 4p states associated with Ga, Ge and Se and the XPS valence-band spectrum of the LiGaGe{sub 2}Se{sub 6} single crystal. The main optical characteristics of the LiGaGe{sub 2}Se{sub 6} compound are elucidated by the first-principles calculations.

The hydrogen-bond network of water supports propagating optical phonon-like modes.

Science.gov (United States)

Elton, Daniel C; Fernández-Serra, Marivi

2016-01-04

The local structure of liquid water as a function of temperature is a source of intense research. This structure is intimately linked to the dynamics of water molecules, which can be measured using Raman and infrared spectroscopies. The assignment of spectral peaks depends on whether they are collective modes or single-molecule motions. Vibrational modes in liquids are usually considered to be associated to the motions of single molecules or small clusters. Using molecular dynamics simulations, here we find dispersive optical phonon-like modes in the librational and OH-stretching bands. We argue that on subpicosecond time scales these modes propagate through water's hydrogen-bond network over distances of up to 2 nm. In the long wavelength limit these optical modes exhibit longitudinal-transverse splitting, indicating the presence of coherent long-range dipole-dipole interactions, as in ice. Our results indicate the dynamics of liquid water have more similarities to ice than previously thought.

Sub-band-gap absorption of Cu(In,Ga)Se{sub 2} thin film semiconductors

Energy Technology Data Exchange (ETDEWEB)

Meessen, Max; Brueggemann, Rudolf; Bauer, Gottfried H. [Carl von Ossietzky University Oldenburg (Germany)

2012-07-01

The sub-band-gap absorption of Cu(In,Ga)Se{sub 2} thin films has been studied by photothermal deflection spectroscopy (PDS) in conjunction with optical transmittance spectroscopy. The resulting absorption coefficients are compared to those calculated from photoluminescence spectra using Planck's generalized law. Quantities related to the absorption like Urbach energy and defect densities are derived from the absorption curves. This concept has been applied to a series of bromine-methanol etched Cu(In{sub x-1},Ga{sub x})Se{sub 2} (x=0.3) absorbers with varying thicknesses. A shift in the band gap is observed with both methods and can be related to the gallium gradient in the samples. In contrast, the Urbach energy and defect absorption values are not substantially affected by the etching process. The influence of CdS buffer layers or highly thermally conductive metallic back contacts on PDS results is studied by measuring nominally identical samples with and without those layers.

Band structures in a two-dimensional phononic crystal with rotational multiple scatterers

Science.gov (United States)

Song, Ailing; Wang, Xiaopeng; Chen, Tianning; Wan, Lele

2017-03-01

In this paper, the acoustic wave propagation in a two-dimensional phononic crystal composed of rotational multiple scatterers is investigated. The dispersion relationships, the transmission spectra and the acoustic modes are calculated by using finite element method. In contrast to the system composed of square tubes, there exist a low-frequency resonant bandgap and two wide Bragg bandgaps in the proposed structure, and the transmission spectra coincide with band structures. Specially, the first bandgap is based on locally resonant mechanism, and the simulation results agree well with the results of electrical circuit analogy. Additionally, increasing the rotation angle can remarkably influence the band structures due to the transfer of sound pressure between the internal and external cavities in low-order modes, and the redistribution of sound pressure in high-order modes. Wider bandgaps are obtained in arrays composed of finite unit cells with different rotation angles. The analysis results provide a good reference for tuning and obtaining wide bandgaps, and hence exploring the potential applications of the proposed phononic crystal in low-frequency noise insulation.

Temperature dependence of Raman scattering by optical phonons in ZnTe

International Nuclear Information System (INIS)

Simmonds, P.E.; Martin, A.D.

1987-01-01

Measurements of the temperature dependence of Raman scattering by optical phonons between temperatures 5 K and 293 K in the II-VI semiconductor ZnTe are reported. Typical Raman spectra for ZnTe at different temperatures are shown and values of the measured LO and TO phonon Raman shifts and linewidths are given for T = 5, 77, and 293 K. The measured linewidth of the LO Raman line as a function of temperature is plotted and compared with model predictions based on various three- and four-phonon processes

Synthesis, crystal and electronic structures and optical properties of (HIm)<sub>2sub> Hg<sub>3sub>Cl>8sub> and (HIm)HgI<sub>3sub> (HIm = imidazolium)

Energy Technology Data Exchange (ETDEWEB)

Nhalil, Hariharan [Univ. of Oklahoma, Norman, OK (United States). Dept. of Chemistry and Biochemistry; Whiteside, Vincent R. [Univ. of Oklahoma, Norman, OK (United States). Homer L. Dodge Dept. of Physics & Astronomy; Sellers, Ian R. [Univ. of Oklahoma, Norman, OK (United States). Homer L. Dodge Dept. of Physics & Astronomy; Ming, Wenmei [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Materials Science & Technology Division; Du, Mao-Hua [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Materials Science & Technology Division; Saparov, Bayrammurad [Univ. of Oklahoma, Norman, OK (United States). Dept. of Chemistry and Biochemistry

2017-11-22

Here, we report synthesis, crystal and electronic structures, and optical properties of two new Hg-based zero-dimensional hybrid organic-inorganic halides (HIm)2Hg3Cl8 and (HIm)HgI3 (HIm = imidazolium). (HIm)<sub>2sub>Hg>3sub>Cl>8sub> crystallizes in the triclinic P-1 space group with a pseudo-layered structure made of organic imidazolium cation layers and anionic inorganic layers containing [Hg<sub>2sub>Cl>6sub>]^2- units and linear [HgCl<sub>2sub>]⁰ molecules. (HIm)HgI<sub>3sub> crystallizes in the monoclinic P2<sub>1sub>/c space group featuring anionic [HgI<sub>3sub>]- units that are surrounded by imidazolium cations. Based on density functional theory calculations, (HIm)<sub>2sub>Hg>3sub>Cl>8sub> has an indirect band gap, whereas (HIm)HgI<sub>3sub> has a direct band gap with the measured onsets of optical absorption at 3.43 and 2.63 eV, respectively. (HIm)<sub>2sub>Hg>3sub>Cl>8sub> and (HIm)HgI<sub>3sub> are broadband light emitters with broad photoluminescence peaks centered at 548 nm (2.26 eV) and 582 nm (2.13 eV), respectively. In conclusion, following the crystal and electronic structure considerations, the PL peaks are assigned to self-trapped excitons.

Hall coefficients and optical properties of La/sub 2-//sub x/Sr/sub x/CuO4 single-crystal thin films

International Nuclear Information System (INIS)

Suzuki, M.

1989-01-01

The low-field Hall coefficient R/sub H/, optical reflectance and transmittance of the La/sub 2-//sub x/Sr/sub x/CuO 4 system with various Sr concentrations from x = 0 to 0.36 are systematically studied using single-crystal thin films epitaxially grown on (100) face SrTiO 3 substrates with the c axis normal to the film surface. For the x range measured, R/sub H/ is positive and decreases more rapidly than that expected from the Sr concentration but more slowly than reported earlier for polycrystalline specimens, indicating anisotropy of R/sub H/. Furthermore, the x dependence indicates deviation from that expected from a simple band model. Within the superconducting composition range, R/sub H/ exhibits characteristic temperature dependence. The optical reflectance spectrum changes from that of a semiconductor at x = 0 to a typical metallic one characterized by the Drude model for x>0.1, indicating the development of itinerant holes in the Cu-O planes. In the optical transmission spectra, an anomalous absorption band is seen in addition to the fundamental absorption corresponding to an energy gap of about 2 eV. This band, which develops with Sr doping, implies an enhancement of the density of states near the Fermi level. Taking these observations into account, the normal-state transport properties are explained with a qualitative consistence

Tuning characteristic of band gap and waveguide in a multi-stub locally resonant phononic crystal plate

Directory of Open Access Journals (Sweden)

Xiao-Peng Wang

2015-10-01

Full Text Available In this paper, the tuning characteristics of band gaps and waveguides in a locally resonant phononic crystal structure, consisting of multiple square stubs deposited on a thin homogeneous plate, are investigated. Using the finite element method and supercell technique, the dispersion relationships and power transmission spectra of those structures are calculated. In contrast to a system of one square stub, systems of multiple square stubs show wide band gaps at lower frequencies and an increased quantity of band gaps at higher frequencies. The vibration modes of the band gap edges are analyzed to clarify the mechanism of the generation of the lowest band gap. Additionally, the influence of the stubs arrangement on the band gaps in multi-stub systems is investigated. The arrangements of the stubs were found to influence the band gaps; this is critical to understand for practical applications. Based on this finding, a novel method to form defect scatterers by changing the arrangement of square stubs in a multi-stub perfect phononic crystal plate was developed. Defect bands can be induced by creating defects inside the original complete band gaps. The frequency can then be tuned by changing the defect scatterers’ stub arrangement. These results will help in fabricating devices such as acoustic filters and waveguides whose band frequency can be modulated.

Phonon dynamics and Urbach energy studies of MgZnO alloys

Energy Technology Data Exchange (ETDEWEB)

Huso, Jesse, E-mail: jhuso@vandals.uidaho.edu; Che, Hui; Thapa, Dinesh; Canul, Amrah; Bergman, Leah [Department of Physics, University of Idaho, Moscow, Idaho 83844-0903 (United States); McCluskey, M. D. [Department of Physics and Astronomy, Washington State University, Pullman, Washington 99164-2814 (United States)

2015-03-28

The Mg{sub x}Zn{sub 1−x}O alloy system is emerging as an environmentally friendly choice in ultraviolet lighting and sensor technologies. Knowledge of defects which impact their optical and material properties is a key issue for utilization of these alloys in various technologies. The impact of phase segregation, structural imperfections, and alloy inhomogeneities on the phonon dynamics and electronic states of Mg{sub x}Zn{sub 1−x}O thin films were studied via selective resonant Raman scattering (SRRS) and Urbach analyses, respectively. A series of samples with Mg composition from 0–68% were grown using a sputtering technique, and the optical gaps were found to span a wide UV range of 3.2–5.8 eV. The extent of the inherent phase segregation was determined via SRRS using two UV-laser lines to achieve resonance with the differing optical gaps of the embedded cubic and wurtzite structural domains. The occurrence of Raman scattering from cubic structures is discussed in terms of relaxation of the selection rules due to symmetry breaking by atomic substitutions. The Raman linewidth and Urbach energy behavior indicate the phase segregation region occurs in the range of 47–66% Mg. Below the phase segregation, the longitudinal optical phonons are found to follow the model of one-mode behavior. The phonon decay model of Balkanski et al. indicates that the major contributor to Raman linewidth arises from the temperature-independent term attributed to structural defects and alloy inhomogeneity, while the contribution from anharmonic decay is relatively small. Moreover, a good correlation between Urbach energy and Raman linewidth was found, implying that the underlying crystal dynamics affecting the phonons also affect the electronic states. Furthermore, for alloys with low Mg composition structural defects are dominant in determining the alloy properties, while at higher compositions alloy inhomogeneity cannot be neglected.

Structure and optical properties of thin As{sub 2}S{sub 3}-In{sub 2}S{sub 3} films

Energy Technology Data Exchange (ETDEWEB)

Todorov, R; Pirov, J; Petkov, K [Institute of Optical Materials and Technologies ' Acad. J. Malinowski' , Bulgarian Academy of Sciences, Acad. G. Bonchev Str., bl.109, 1113 Sofia (Bulgaria); Tsankov, D, E-mail: rossen@clf.bas.bg [Institute of Organic Chemistry with Centre of Phytochemistry, Bulgarian Academy of Sciences, Acad. G. Bonchev St. bl.9, 1113 Sofia (Bulgaria)

2011-08-03

This paper deals with the optical properties of thin As{sub 2}S{sub 3}-In{sub 2}S{sub 3} films. The thin layers were deposited by thermal co-evaporation of As{sub 2}S{sub 3} and In{sub 2}S{sub 3}. The composition of the coatings was controlled by x-ray microanalysis; it was found to be close to the expected one. The refractive index n and optical band gap E{sub g}{sup opt} were calculated from the transmittance and reflectance spectra. The results showed that the refractive index of thin As-S films is not affected by the addition of 1 at% indium and it increases from 2.46 to 2.58 for thin film with 13 at% In. A decrease in the changes in the refractive index, {Delta}n, after exposure to light or annealing with addition of indium in arsenic sulfide is observed. To explain the influence of the indium on the photoinduced changes in the optical properties of thin As-S-In films, the glass structure was investigated by infrared spectroscopy. The calculated values of the optical constants were compared with those obtained from ellipsometric measurements.

Synthesis, surface structure and optical properties of double perovskite Sr{sub 2}NiMoO{sub 6} nanoparticles

Energy Technology Data Exchange (ETDEWEB)

Xu, Lei; Wan, Yingpeng [State and Local Joint Engineering Laboratory for Novel Functional Polymeric Materials, College of Chemistry, Chemical Engineering and Materials Science, Soochow University, Suzhou, 215123 (China); Xie, Hongde, E-mail: xiehongde@suda.edu.cn [State and Local Joint Engineering Laboratory for Novel Functional Polymeric Materials, College of Chemistry, Chemical Engineering and Materials Science, Soochow University, Suzhou, 215123 (China); Huang, Yanlin; Yang, Li [State and Local Joint Engineering Laboratory for Novel Functional Polymeric Materials, College of Chemistry, Chemical Engineering and Materials Science, Soochow University, Suzhou, 215123 (China); Qin, Lin [Department of Physics and Interdisciplinary Program of Biomedical, Mechanical & Electrical Engineering, Pukyong National University, Busan, 608-737 (Korea, Republic of); Seo, Hyo Jin, E-mail: hjseo@pknu.ac.kr [Department of Physics and Interdisciplinary Program of Biomedical, Mechanical & Electrical Engineering, Pukyong National University, Busan, 608-737 (Korea, Republic of)

2016-12-15

Highlights: • Double perovskite Sr{sub 2}NiMoO{sub 6} nanoparticles were prepared via sol-gel route. • The nanoparticles have efficient optical absorption in visible light. • The band structure and energy positions were determined. • The perovskite has efficient photocatalytic on RhB photodegradation. • Multivalent Mo and Ni-ions on the surfaces were investigated. - Abstract: Double perovskite Sr{sub 2}NiMoO{sub 6} nanoparticles were synthesized via the chemical sol-gel route. The phase formation was investigated through X-ray polycrystalline diffraction (XRD) and Rietveld refinements. The perovskite crystallized in worm-like nano-grains with the diameter of 20–50 nm. The optical properties were measured by the optical absorption spectra. The nanoparticles present an indirect allowed transition with a narrow band gap of 2.1 eV. Sr{sub 2}NiMoO{sub 6} nanoparticles have obvious photocatalytic ability on the degradation of Rhodamine B (RhB) solutions under the irradiation of visible light. The transport behaviors of the excitons were investigated from the photoluminescence spectra and the corresponding decay lifetimes. Sr{sub 2}NiMoO{sub 6} nanoparticles present several advantages for photocatalysis such as the appropriate band energy positions, the quenched luminescence, and the coexistence of multivalent ions in the lattices.

Waveguiding in supported phononic crystal plates

International Nuclear Information System (INIS)

Vasseur, J; Hladky-Hennion, A-C; Deymier, P; Djafari-Rouhani, B; Duval, F; Dubus, B; Pennec, Y

2007-01-01

We investigate, with the help of the finite element method, the existence of absolute band gaps in the band structure of a free-standing phononic crystal plate and of a phononic crystal slab deposited on a substrate. The two-dimensional phononic crystal is constituted by a square array of holes drilled in an active piezoelectric (PZT5A or AlN) matrix. For both matrix materials, an absolute band gap occurs in the band structure of the free-standing plate provided the thickness of the plate is on the order of magnitude of the lattice parameter. When the plate is deposited on a Si substrate, the absolute band gap still remains when the matrix of the phononic crystal is made of PZT5A. The AlN phononic crystal plate losses its gap when supported by the Si substrate. In the case of the PZT5A matrix, we also study the possibility of localized modes associated with a linear defect created by removing one row of air holes in the deposited phononic crystal plate

Phonon Routing in Integrated Optomechanical Cavity-waveguide Systems

Science.gov (United States)

2015-08-20

cavity (bottom beam of Fig. 1b), allowing for evanescent cou- pling of laser light into and out of the cavity. A single optical fiber taper is used to...couple light into the on- chip coupling waveguide, and a photonic crystal mirror is etched in to the end of the optical coupling waveguide so that light...coupled into the nanobeam cavity can be recollected by the optical fiber taper as per Ref. [36]. Figure 1c shows the band structure of the phonon

LA phonons scattering of surface electrons in Bi{sub 2}Se{sub 3}

Energy Technology Data Exchange (ETDEWEB)

Huang, Lang-Tao [State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084 (China); Zhu, Bang-Fen [State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China and Institute of Advanced Study, Tsinghua University, Beijing 100084 (China)

2013-12-04

Within the Boltzmann equation formalism we evaluate the transport relaxation time of Dirac surface states (SSs) in the typical topological insulator(TI) Bi{sub 2}Se{sub 3} due to the phonon scattering. We find that although the back-scattering of the SSs in TIs is strictly forbidden, the in-plane scattering between SSs in 3-dimensional TIs is allowed, maximum around the right-angle scattering. Thus the topological property of the SSs only reduces the scattering rate to its one half approximately. Besides, the larger LA deformation potential and lower sound velocity of Bi{sub 2}Se{sub 3} enhance the scattering rate significantly. Compared with the Dirac electrons in graphene, we find the scattering rate of SSs in Bi{sub 2}Se{sub 3} are two orders of magnitudes larger, which agree with the recent transport experiments.

Diamond family of colloidal supercrystals as phononic metamaterials

Science.gov (United States)

Aryana, Kiumars; Zanjani, Mehdi B.

2018-05-01

Colloidal crystals provide a versatile platform for designing phononic metamaterials with exciting applications for sound and heat management. New advances in the synthesis and self-assembly of anisotropic building blocks such as colloidal clusters have expanded the library of available micro- and nano-scale ordered multicomponent structures. Diamond-like supercrystals formed by such clusters and spherical particles are notable examples that include a rich family of crystal symmetries such as diamond, double diamond, zinc-blende, and MgCu2. This work investigates the design of phononic supercrystals by predicting and analyzing phonon transport properties. In addition to size variation and structural diversity, these supercrystals encapsulate different sub-lattice types within one structure. Computational models are used to calculate the effect of various parameters on the phononic spectrum of diamond-like supercrystals. The results show that structures with relatively small or large filling factors (f > 0.65 or f f > 0.45). The double diamond and zinc-blende structures render the largest bandgap size compared to the other supercrystals studied in this paper. Additionally, this article discusses the effect of incorporating various configurations of sub-lattices by selecting different material compositions for the building blocks. The results suggest that, for the same structure, there exist multiple phononic variants with drastically different band structures. This study provides a valuable insight for evaluating novel colloidal supercrystals for phononic applications and guides the future experimental work for the synthesis of colloidal structures with desired phononic behavior.

Chemically deposited Sb{sub 2}S{sub 3} thin films for optical recording

Energy Technology Data Exchange (ETDEWEB)

Shaji, S; Arato, A; Castillo, G Alan; Palma, M I Mendivil; Roy, T K Das; Krishnan, B [Facultad de IngenierIa Mecanica y Electrica, Universidad Autonoma de Nuevo Leon, San Nicolas de los Garza, Nuevo Leon, C.P- 66450 (Mexico); O' Brien, J J; Liu, J, E-mail: bkrishnan@fime.uanl.m [Center for Nanoscience and Department of Chemistry and Biochemistry, University of Missouri-St. Louis, One Univ. Blvd., St. Louis, MO - 63121 (United States)

2010-02-24

Laser induced changes in the properties of Sb{sub 2}S{sub 3} thin films prepared by chemical bath deposition are described in this paper. Sb{sub 2}S{sub 3} thin films of thickness 550 nm were deposited from a solution containing SbCl{sub 3} and Na{sub 2}S{sub 2}O{sub 3} at 27 {sup 0}C for 5 h. These thin films were irradiated by a 532 nm continuous wave laser beam under different conditions at ambient atmosphere. X-ray diffraction analysis showed amorphous to polycrystalline transformation due to laser exposure of these thin films. Morphology and composition of these films were described. Optical properties of these films before and after laser irradiation were analysed. The optical band gap of the material was decreased due to laser induced crystallization. The results obtained confirm that there is further scope for developing this material as an optical recording media.

Hot phonon generation by split-off hole band electrons in AlxGa1-xAs alloys investigated by picosecond Raman scattering

International Nuclear Information System (INIS)

Jacob, J.M.; Kim, D.S.; Zhou, J.F.; Song, J.J.

1992-01-01

The initial generation of hot LO phonons by the relaxation of hot carriers in GaAs and Al x Ga 1-x As alloy semiconductors is studied. Within the initial 2ps of photoexcitation, only those electrons originating from the split-off hole bands are found to generate a significant number of I-valley hot phonons when photon energies of 2.33eV are used. A picosecond Raman scattering technique is used to determine the hot phonon occupation number in a series of MBE grown Al x Ga 1-x As samples with 0≤x≤0.39. The Stokes and anti-Stokes lines were measured for both GaAs-like and AlAs-like LO phonon modes to determine their occupation numbers. The authors observe a rapid decrease in the phonon occupation numbers as the aluminum concentration increases beyond x = 0.2. This rapid decrease is explained by considering only those electrons photoexcited from the split-off hole band. Almost all of the electrons originating from the heavy and light-hole bands are shown to quickly transfer and remain in the X and L valleys without generating significant numbers of hot LO phonons during the initial 2ps and at a carrier density of 10 17 cm -3 . A model based upon the instantaneous thermalization of hot electrons photoexcited from the split-off hole bands is used to fit the data. They have obtained very good agreement between experiment and theory. This work provides a clear understanding to the relaxation of Γ valley hot electrons by the generation of hot phonons on subpicosecond and picosecond time scales, which has long standing implications to previous time resolved Raman experiments

Determination and analysis of optical constants for Ge{sub 15}Se{sub 60}Bi{sub 25} thin films

Energy Technology Data Exchange (ETDEWEB)

Atyia, H.E., E-mail: hebaelghrip@hotmail.com [Physics Department, Faculty of Education, Ain Shams University, Roxy, Cairo (Egypt); Physics Department, Faculty of Applied Medical Science at Turabah, Taif University, Turabah (Saudi Arabia); Hegab, N.A. [Physics Department, Faculty of Education, Ain Shams University, Roxy, Cairo (Egypt)

2014-12-01

Thin films of Ge{sub 15}Se{sub 60}Bi{sub 25} were deposited, at room temperature, on glass substrates by thermal evaporation technique. The optical reflectance and transmittance of amorphous Ge{sub 15}Se{sub 60}Bi{sub 25} films were measured at normal incident in the wavelength range (500–2500 nm). The optical constants, the refractive index n and the absorption index k, were determined and analyzed according to different approximate methods using the transmittance measurements only and accurate method using the transmittance and reflectance measurements. Analysis of the absorption index k data reveal the values of the optical band gap E{sub g}{sup opt}, the width of tails E{sub e} and the type of transitions. Some optical parameters such as, high frequency dielectric constant ε{sub ∞}, dispersion parameters (oscillation energy E{sub s} and the dispersion energy E{sub d}), real and imaginary parts of complex dielectric constant (ε{sub 1} and ε{sub 2}) and dielectric parameters (dissipation factor tan δ, dielectric relaxation time τ, the volume and surface energy loss functions) were estimated by analyzing the refractive index n data.The relative errors for all optical parameters depending on different approximate methods were identified and discussed.

Low-Field Mobility and Galvanomagnetic Properties of Holes in Germanium with Phonon Scattering

DEFF Research Database (Denmark)

Lawætz, Peter

1968-01-01

acoustic scattering, no overall consistency is found between available galvanomagnetic data and deformation potentials derived directly from experiments on strained Ge. The discrepancies may be ascribed to ionized-impurity scattering, but at higher temperatures where optical phonon scattering is operative......A theoretical calculation of the low-field galvanomagnetic properties of holes in Ge has been carried out incorporating all relevant details of the band structure. The scattering is limited to acoustic and optical phonons and is described by the deformation potentials a, b, d, and d0. For pure......, the deviations are still appreciable. We are led to conclude that the deformation-potential theory of phonon scattering needs reconsideration, and a nontrivial correction is pointed out....

Optical phonon modes of wurtzite InP

Science.gov (United States)

Gadret, E. G.; de Lima, M. M.; Madureira, J. R.; Chiaramonte, T.; Cotta, M. A.; Iikawa, F.; Cantarero, A.

2013-03-01

Optical vibration modes of InP nanowires in the wurtzite phase were investigated by Raman scattering spectroscopy. The wires were grown along the [0001] axis by the vapor-liquid-solid method. The A1(TO), E2h, and E1(TO) phonon modes of the wurtzite symmetry were identified by using light linearly polarized along different directions in backscattering configuration. Additionally, forbidden longitudinal optical modes have also been observed. Furthermore, by applying an extended 11-parameter rigid-ion model, the complete dispersion relations of InP in the wurtzite phase have been calculated, showing a good agreement with the Raman experimental data.

Kinks in the σ Band of Graphene Induced by Electron-Phonon Coupling

DEFF Research Database (Denmark)

Mazzola, Federico; Wells, Justin; Yakimova, Rosita

2013-01-01

Angle-resolved photoemission spectroscopy reveals pronounced kinks in the dispersion of the band of graphene. Such kinks are usually caused by the combination of a strong electron-boson interaction and the cutoff in the Fermi-Dirac distribution. They are therefore not expected for the band...... of graphene that has a binding energy of more than 3:5 eV. We argue that the observed kinks are indeed caused by the electron-phonon interaction, but the role of the Fermi-Dirac distribution cutoff is assumed by a cutoff in the density of states. The existence of the effect suggests a very weak coupling...

Quantization of band tilting in modulated phononic crystals

Science.gov (United States)

Nassar, H.; Chen, H.; Norris, A. N.; Huang, G. L.

2018-01-01

A general theory of the tilting of dispersion bands in phononic crystals whose properties are being slowly and periodically modulated in space and time is established. The ratio of tilt to modulation speed is calculated, for the first time, in terms of Berry's phase and curvature and is proven to be a robust integer-valued Chern number. Derivations are based on a version of the adiabatic theorem for elastic waves demonstrated thanks to WKB asymptotics. Findings are exemplified in the case of a 3-periodic discrete spring-mass lattice. Tilted dispersion diagrams plotted using fully numerical simulations and semianalytical calculations based on a numerically gauge invariant expression of Berry's phase show perfect agreement. One-way blocking of waves due to the tilt, and ultimately to the breaking of reciprocity, is illustrated numerically and shown to be highly significant across a limited number of unit cells, suggesting the feasibility of experimental demonstrations. Finally, a version of the bulk-edge correspondence principle relating the tilt of bulk bands to the number of one-way gapless edge states is demonstrated.

Visible–NIR emission and structural properties of Sm{sup 3+} doped heavy-metal oxide glass with composition B{sub 2}O{sub 3}–PbO–Bi{sub 2}O{sub 3}–GeO{sub 2}

Energy Technology Data Exchange (ETDEWEB)

Herrera, A. [Instituto de Física, Universidade Federal do Rio Grande do Sul, Av. Bento Gonçalves 9500 - Caixa Postal 15051, CEP 91501-970 Porto Alegre, RS (Brazil); Grupo de Fotônica e Fluidos Complexos, Instituto de Física, Universidade Federal de Alagoas, 57072-900 Maceió, AL (Brazil); Fernandes, R.G.; Camargo, A.S.S. de; Hernandes, A.C. [Instituto de Física de São Carlos, Universidade de São Paulo, Av. Trabalhador Sãocarlense, 400, CEP 13566-590 São Carlos, SP (Brazil); Buchner, S. [Universidade Federal de Ciências da Saúde de Porto Alegre, Rua Sarmento Leite, 245, CEP 90050-170 Porto Alegre, RS (Brazil); Jacinto, C. [Grupo de Fotônica e Fluidos Complexos, Instituto de Física, Universidade Federal de Alagoas, 57072-900 Maceió, AL (Brazil); Balzaretti, N.M., E-mail: naira@if.ufrgs.br [Instituto de Física, Universidade Federal do Rio Grande do Sul, Av. Bento Gonçalves 9500 - Caixa Postal 15051, CEP 91501-970 Porto Alegre, RS (Brazil)

2016-03-15

A highly transparent Sm{sup 3+} glass with composition B{sub 2}O{sub 3}–PbO–Bi{sub 2}O{sub 3}–GeO{sub 2} was obtained by the traditional melt quenching technique and characterized from structural and spectroscopic points of view. Analysis by X-ray diffraction and Raman spectroscopy confirmed the amorphous nature of the sample and revealed the expected low phonon energy. Differential thermal analysis was also carried out to obtain the glass transition and the crystallization temperatures, related to the thermal stability of the sample. Judd–Ofelt theory was applied to evaluate phenomenological intensity parameters Ω{sub λ} (λ=2, 4 and 6) from the optical absorption measurements. The transition probabilities, radiative lifetimes, branching ratio and stimulated emission cross-section were also calculated. Photoluminescence spectra recorded in the visible and infrared regions revealed intense green, orange, red and near infrared emission bands providing a new trace to develop tunable laser and optoelectronics devices.

Electronic structure and optical properties of Sr{sub 2}SnO{sub 4} studied with FP-LAPW method in density functional theory

Energy Technology Data Exchange (ETDEWEB)

Prijamboedi, B., E-mail: boedi@chem.itb.ac.id; Umar, S.; Failamani, F. [Inorganic and Physical Chemistry Research Division, Faculty of Mathematics and Natural Sciences, Institut Teknologi Bandung, Jl. Ganesha 10, Bandung 40132 (Indonesia)

2015-04-16

Oxide material of Sr{sub 2}SnO{sub 4}, when it is doped with Ti becomes a phosphor material that can emit intense blue light at room temperature. It is important to study the electronic structure of this material in order to determine the optical processes that occur in Ti-doped Sr{sub 2}SnO{sub 4}. Electronic structure and optical properties of Sr{sub 2}SnO{sub 4} is studied using density functional theory framework with full potential linearized augmented plane waves plus local orbitals (FP-LAPW+lo) method. We use modified Becke-Johnson (mBJ) exchange-correlation potential to calculate the energy gap. Our calculation showed that Sr{sub 2}SnO{sub 4} has indirect band gap with band gap energy of around 4.2 eV. The experimental absorption spectra of Sr{sub 2}SnO{sub 4} indicated that this oxide has band gap of around 4.6 eV and it is closer to the results given by mBJ exchange-correlation potential. We also studied other optical properties of Sr{sub 2}SnO{sub 4} and it is found in agreement with the experimental results.

Ab-initio calculations of semiconductor MgGeP{sub 2} and MgGeAs{sub 2}

Energy Technology Data Exchange (ETDEWEB)

Kocak, B.; Ciftci, Y.O., E-mail: yasemin@gazi.edu.tr

2016-05-15

Highlights: • MgGeP{sub 2} and MgGeAs{sub 2} are semiconductor compounds. • MgGeP{sub 2} and MgGeAs{sub 2} are energetically, mechanically and dynamically stable. • The electronic charge density contour plot shows that the nature of bonding is a mixture of ionic-covalent. - Abstract: In this study, we focus on structural, electronic, elastic, lattice dynamic and optic properties of MgGeP{sub 2} and MgGeAs{sub 2} using ab-initio density-functional theory (DFT) within Armiento-Mattson 2005 (AM05) scheme of the generalized gradient approximation (GGA) for the exchange-correlation potential. Our computed structural results are in reasonable agreement with the literature. The band gap of these compounds is predicted to be direct. Our elastic results prove that these compounds are mechanically stable. The obtained phonon spectra of MgGeP{sub 2} and MgGeAs{sub 2} do not exhibit any significant imaginary branches using GGA-AM05 for the exchange-correlation approximation. Further analysis of the optical response of the dielectric functions, optical reflectivity, refractive index, extinction coefficient and electron energy loss delves into for the energy range of 0–22.5 eV. It motivated that there exists an optical polarization anisotropy of these compounds for optoelectronic device applications.

Natural Fe{sub 3}O{sub 4} nanoparticles embedded zinc–tellurite glasses: Polarizability and optical properties

Energy Technology Data Exchange (ETDEWEB)

Widanarto, W. [Physics Study Program, Jenderal Soedirman University, Jl. Dr. Soeparno 61, Purwokerto 53123 (Indonesia); Sahar, M.R., E-mail: rahimsahar@utm.my [Department of Physics, Faculty of Science, Universiti Teknologi Malaysia, Johor Bahru, Skudai 81310 (Malaysia); Ghoshal, S.K.; Arifin, R.; Rohani, M.S.; Hamzah, K. [Department of Physics, Faculty of Science, Universiti Teknologi Malaysia, Johor Bahru, Skudai 81310 (Malaysia); Jandra, M. [FTI, University Teknologi Malaysia, Johor Bahru, Skudai 81310 (Malaysia)

2013-02-15

Modifying the optical behavior of zinc–tellurite glass by embedding magnetic nanoparticles has implication in nanophotonics. A series of zinc–tellurite glasses containing natural Fe{sub 3}O{sub 4} nanoparticles with composition (80 − x)TeO{sub 2}·xFe{sub 3}O{sub 4}·20ZnO (0 ≤ x ≤ 2) in mol% are synthesized by melt quenching method and their optical properties are investigated using FTIR and UV–vis–NIR spectroscopies. Lorentz–Lorenz relations are exploited to determine the refractive index, molar refraction and electronic polarizability. The sharp absorption peaks of FTIR spectra show a shift from 667 cm{sup −1} to 671 cm{sup −1} in the presence of nanoparticles that increase the non-bridging oxygen, confirmed by the intensity change of the TeO{sub 3} peak at 752 cm{sup −1}. A new peak around 461 cm{sup −1} is also observed which is attributed to the band characteristic of covalent Fe–O linkages. A decrease in the Urbach energy as much as 0.122 eV and the optical energy band gap with the increase of Fe{sub 3}O{sub 4} concentration (0.5–1.0 mol%) is evidenced. Electronic polarizability of the glasses increases with increasing Fe{sub 3}O{sub 4} nanoparticles concentration up to 1 mol%. Interestingly, the polarizability tends to decrease with the further increase of Fe{sub 3}O{sub 4} concentration at 2 mol%. The role of magnetic nanoparticles in influencing the structural and optical behavior are examined and understood. - Highlights: ► Incorporation of natural Fe{sub 3}O{sub 4} nanoparticles into the zinc–tellurite glass. ► Influence of magnetic nanoparticles in modifying structure and optical properties. ► Enhancement of refraction index and change in electronic polarizability.

Donor impurity-related optical absorption spectra in GaAs-Ga{sub 1-x}Al{sub x}As quantum wells: hydrostatic pressure and {gamma}-X conduction band mixing effects

Energy Technology Data Exchange (ETDEWEB)

Mora-Ramos, M.E. [Facultad de Ciencias, Universidad Autonoma del Estado de Morelos, Av. Universidad 1001, C.P. 62209, Cuernavaca, MOR (Mexico); Inst. de Ciencia de Materiales de Madrid, CSIC, Sor Juana Ines de la Cruz 3, 28049 Madrid (Spain); Lopez, S.Y. [Fac. de Educacion, Universidad de Antioquia, AA 1226, Medellin (Colombia); Duque, C.A. [Inst. de Fisica, Universidad de Antioquia, AA 1226, Medellin (Colombia); Velasco, V.R. [Inst. de Ciencia de Materiales de Madrid, CSIC, Sor Juana Ines de la Cruz 3, 28049 Madrid (Spain)

2007-07-01

Using a variational procedure within the effective mass approximation, the mixing between the {gamma} and X conduction band valleys in GaAs-Ga{sub 1-x}Al{sub x}As quantum wells is investigated by taking into account the effect of applied hydrostatic pressure. Some optical properties such as donor and/or acceptor binding energy and impurity-related transition energies are calculated and comparisons with available experimental data are presented. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Optical study of the band structure of wurtzite GaP nanowires

KAUST Repository

Assali, S.

2016-07-25

We investigated the optical properties of wurtzite (WZ) GaP nanowires by performing photoluminescence (PL) and time-resolved PL measurements in the temperature range from 4 K to 300 K, together with atom probe tomography to identify residual impurities in the nanowires. At low temperature, the WZ GaP luminescence shows donor-acceptor pair emission at 2.115 eV and 2.088 eV, and Burstein-Moss band-filling continuum between 2.180 and 2.253 eV, resulting in a direct band gap above 2.170 eV. Sharp exciton α-β-γ lines are observed at 2.140–2.164–2.252 eV, respectively, showing clear differences in lifetime, presence of phonon replicas, and temperature-dependence. The excitonic nature of those peaks is critically discussed, leading to a direct band gap of ∼2.190 eV and to a resonant state associated with the γ-line ∼80 meV above the Γ8C conduction band edge.

Optical study of the band structure of wurtzite GaP nanowires

KAUST Repository

Assali, S.; Greil, J.; Zardo, I.; Belabbes, Abderrezak; de Moor, M. W. A.; Koelling, S.; Koenraad, P. M.; Bechstedt, F.; Bakkers, E. P. A. M.; Haverkort, J. E. M.

2016-01-01

We investigated the optical properties of wurtzite (WZ) GaP nanowires by performing photoluminescence (PL) and time-resolved PL measurements in the temperature range from 4 K to 300 K, together with atom probe tomography to identify residual impurities in the nanowires. At low temperature, the WZ GaP luminescence shows donor-acceptor pair emission at 2.115 eV and 2.088 eV, and Burstein-Moss band-filling continuum between 2.180 and 2.253 eV, resulting in a direct band gap above 2.170 eV. Sharp exciton α-β-γ lines are observed at 2.140–2.164–2.252 eV, respectively, showing clear differences in lifetime, presence of phonon replicas, and temperature-dependence. The excitonic nature of those peaks is critically discussed, leading to a direct band gap of ∼2.190 eV and to a resonant state associated with the γ-line ∼80 meV above the Γ8C conduction band edge.

The effect of n- and p-type doping on coherent phonons in GaN.

Science.gov (United States)

Ishioka, Kunie; Kato, Keiko; Ohashi, Naoki; Haneda, Hajime; Kitajima, Masahiro; Petek, Hrvoje

2013-05-22

The effect of doping on the carrier-phonon interaction in wurtzite GaN is investigated by pump-probe reflectivity measurements using 3.1 eV light in near resonance with the fundamental band gap of 3.39 eV. Coherent modulations of the reflectivity due to the E2 and A1(LO) modes, as well as the 2A1(LO) overtone are observed. Doping of acceptor and donor atoms enhances the dephasing of the polar A1(LO) phonon via coupling with plasmons, with the effect of donors being stronger. Doping also enhances the relative amplitude of the coherent A1(LO) phonon with respect to that of the high-frequency E2 phonon, though it does not affect the relative intensity in Raman spectroscopic measurements. We attribute this enhanced coherent amplitude to the transient depletion field screening (TDFS) excitation mechanism, which, in addition to impulsive stimulated Raman scattering (ISRS), contributes to the generation of coherent polar phonons even for sub-band gap excitation. Because the TDFS mechanism requires photoexcitation of carriers, we argue that the interband transition is made possible at a surface with photon energies below the bulk band gap through the Franz-Keldysh effect.

High-pressure band-gap engineering in lead-free Cs{sub 2}AgBiBr{sub 6} double perovskite

Energy Technology Data Exchange (ETDEWEB)

Li, Qian [Department of Chemistry, Southern University of Science and Technology, SUSTech, Shenzhen, Guangdong (China); College of Chemistry, Nankai University, Tianjin (China); Wang, Yonggang; Yang, Wenge [High Pressure Synergetic Consortium, HPSynC, Geophysical Laboratory, Carnegie Institution of Washington, Argonne, IL (United States); Pan, Weicheng; Tang, Jiang [Wuhan National Laboratory for Optoelectronics, WNLO and School of Optical and Electronic Information, Huazhong University of Science and Technology, HUST, Wuhan (China); Zou, Bo [State Key Laboratory of Superhard Materials, Jilin University, Changchun (China); Quan, Zewei [Department of Chemistry, Southern University of Science and Technology, SUSTech, Shenzhen, Guangdong (China)

2017-12-11

Novel inorganic lead-free double perovskites with improved stability are regarded as alternatives to state-of-art hybrid lead halide perovskites in photovoltaic devices. The recently discovered Cs{sub 2}AgBiBr{sub 6} double perovskite exhibits attractive optical and electronic features, making it promising for various optoelectronic applications. However, its practical performance is hampered by the large band gap. In this work, remarkable band gap narrowing of Cs{sub 2}AgBiBr{sub 6} is, for the first time, achieved on inorganic photovoltaic double perovskites through high pressure treatments. Moreover, the narrowed band gap is partially retainable after releasing pressure, promoting its optoelectronic applications. This work not only provides novel insights into the structure-property relationship in lead-free double perovskites, but also offers new strategies for further development of advanced perovskite devices. (copyright 2017 Wiley-VCH Verlag GmbH and Co. KGaA, Weinheim)

Optical properties and crystallization kinetics of (TeO{sub 2})(ZnO)(TiO{sub 2}) glasses

Energy Technology Data Exchange (ETDEWEB)

Kabalci, Idris [Department of Physics Education, Education Faculty, Harran University, Sanliurfa (Turkey); Koerpe, Nese Oeztuerk [Department of Materials Science, Eskisehir, Osmangazi University, Eskisehir (Turkey); Duran, Tugba; Oezdemir, Mustafa [Department of Physics, Science and Arts Faculty, Marmara University, Istanbul (Turkey)

2011-09-15

Ternary tellurite based glasses in the (TeO{sub 2})(ZnO)(TiO{sub 2}) system were prepared and its optical properties and crystallization kinetics investigated by using UV-VIS spectrophotometer and differential thermal analyzer (DTA). All the glasses were transparent from visible to near infrared region for different ZnO glass compositions (x=0.05, 0.10, 0.20, and 0.30 mol). In the experiment, optical band gap and Urbach energies were estimated from the optical absorption spectra between 400 and 800 nm wavelength region. The observed results confirm that the addition of ZnO glass composition from 0.05 to 0.30 mol increases the optical band gap energy from 2.94 to 3.0 eV. In addition, glass transition (T{sub g}), crystallization (T{sub p}) and melting temperature (T{sub m}) were determined by using the DTA plots. Finally, DTA results obtained with a heating rate of 20 C/min show that the peak crystallization temperature increases from 463 to 533 C as the ZnO content increases from 0.05 to 0.30 mol (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Mixed alkali effect in borate glasses - electron paramagnetic resonance and optical absorption studies in Cu sup 2 sup + doped xNa sub 2 O- (30 - x)K sub 2 O- 70B sub 2 O sub 3 glasses

CERN Document Server

Chakradhar, R P S; Rao, J L; Ramakrishna, J

2003-01-01

The mixed alkali borate glasses xNa sub 2 O-(30 - x)K sub 2 O-70B sub 2 O sub 3 (5 sup sup 2 B sub 2 sub g) and a weak band on the higher energy side at 22 115 cm sup - sup 1 corresponding to the transition ( sup 2 B sub 1 sub g -> sup 2 E sub g). With x > 5, the higher energy band disappears and the lower energy band shifts slightly to the lower energy side. By correlating the EPR and optical absorption data, the molecular orbital coefficients alpha sup 2 and beta sub 1 sup 2 are evaluated for the different glasses investigated. The values indicate that the in-plane sigma bonding is moderately covalent while the in-plane pi bonding is significantly ionic in nature; these exhibit a minimum with x = 15, showing the MAE. The theoretical values of optical basicity of the glasses have also been evaluated. From optical absorption edges, the optical bandgap energies have been calculated and are found to lie in the range 3.00-3.40 eV. The physical properties of the glasses studied have also been evaluated with respe...

Optical studies on Zn-doped lead chalcogenide (PbSe){sub 100−x}Zn{sub x} thin films composed of nanoparticles

Energy Technology Data Exchange (ETDEWEB)

Ashraf, Md. Tanweer [Department of Applied Sciences and Humanities, Jamia Millia Islamia (JMI), New Delhi-25 (India); Salah, Numan A. [Center of Nanotechnology, King Abdulaziz University, Jeddah (Saudi Arabia); Rafat, M. [Department of Applied Sciences and Humanities, Jamia Millia Islamia (JMI), New Delhi-25 (India); Zulfequar, M. [Department of Physics, Jamia Millia Islamia, New Delhi-25 (India); Khan, Zishan H., E-mail: zishan_hk@yahoo.co.in [Department of Applied Sciences and Humanities, Jamia Millia Islamia (JMI), New Delhi-25 (India)

2016-08-01

The effect of laser-Irradiation on the optical properties of Zn-doped PbSe thin films composed of nanoparticles has been studied. Scanning electron microscope (SEM) investigations suggest the formation of nanoparticles of average size of 50 nm for all the studied Zn compositions. XRD studies show that the as-prepared thin films are polycrystalline in nature. The formation of nanoparticles of Zn-doped PbSe has been confirmed by indexing the crystal planes as observed in the XRD spectra. The addition of Zn in (PbSe){sub 100−x}Zn{sub x} thin films result in the blue shift in photoluminescence spectra, this blue shift is associated with the narrowing of the band gap. Optical absorption measurements reveal a direct band gap for the present samples, which decreases on increasing the Zn content. The same trend has also been observed for the samples irradiated with laser. Further, the calculated values of Urbach energy are found to increase with the increase in Zn contents for the as-prepared as well as laser-irradiated samples. All the above observations agree well with the results of optical band gap and suggest that the decrease in band gap may be due to increase in band tails, defects and particle size. - Highlights: • Nanoparticles of Zn doped (PbSe){sub 100−x}Zn{sub x} lead chalcogenides have been synthesized. • Effect of laser irradiation on optical properties of (PbSe){sub 100−x}Zn{sub x} has been studied. • A blue shift in PL spectra is obtained on Zn incorporation.

The O{sub 2} A-Band in the Fluxes and Polarization of Starlight Reflected by Earth-Like Exoplanets

Energy Technology Data Exchange (ETDEWEB)

Fauchez, Thomas [Laboratoire d’Optique Atmosphèrique (LOA), UMR 8518, Université Lille 1, Villeneuve d’Ascq (France); Rossi, Loic; Stam, Daphne M. [Faculty of Aerospace Engineering, Delft University of Technology, Kluyverweg 1, 2629 HS Delft (Netherlands)

2017-06-10

Earth-like, potentially habitable exoplanets are prime targets in the search for extraterrestrial life. Information about their atmospheres and surfaces can be derived by analyzing the light of the parent star reflected by the planet. We investigate the influence of the surface albedo A {sub s}, the optical thickness b {sub cloud}, the altitude of water clouds, and the mixing ratio of biosignature O{sub 2} on the strength of the O{sub 2} A-band (around 760 nm) in the flux and polarization spectra of starlight reflected by Earth-like exoplanets. Our computations for horizontally homogeneous planets show that small mixing ratios ( η < 0.4) will yield moderately deep bands in flux and moderate-to-small band strengths in polarization, and that clouds will usually decrease the band depth in flux and the band strength in polarization. However, cloud influence will be strongly dependent on properties such as optical thickness, top altitude, particle phase, coverage fraction, and horizontal distribution. Depending on the surface albedo and cloud properties, different O{sub 2} mixing ratios η can give similar absorption-band depths in flux and band strengths in polarization, especially if the clouds have moderate-to-high optical thicknesses. Measuring both the flux and the polarization is essential to reduce the degeneracies, although it will not solve them, especially not for horizontally inhomogeneous planets. Observations at a wide range of phase angles and with a high temporal resolution could help to derive cloud properties and, once those are known, the mixing ratio of O{sub 2} or any other absorbing gas.

Thermal conductivity of electron-doped CaMnO3 perovskites: Local lattice distortions and optical phonon thermal excitation

International Nuclear Information System (INIS)

Wang Yang; Sui Yu; Wang Xianjie; Su Wenhui; Liu Xiaoyang; Fan, Hong Jin

2010-01-01

The thermal transport properties of a series of electron-doped CaMnO 3 perovskites have been investigated. Throughout the temperature range 5-300 K, phonon thermal conductivity is dominant, and both electron and spin wave contributions are negligible. The short phonon mean free paths in this system result in the relatively low thermal conductivities. The strong phonon scatterings stem from the A-site mismatch and bond-length fluctuations induced by local distortions of MnO 6 octahedra. The thermal conductivity in the magnetically ordered state is enhanced as a result of the decrease in spin-phonon scattering. The results also indicate that above the magnetic ordering temperature, observable thermal excitation of optical phonons occurs. The contribution of optical phonons to thermal conductivity becomes non-negligible and is proposed to play an important role in the glass-like thermal transport behavior (i.e. positive temperature dependence of the thermal conductivity) in the paramagnetic state. These features can be understood in terms of an expression of thermal conductivity that includes both acoustic and optical phonon terms.

Acousto-optic modulation of a photonic crystal nanocavity with Lamb waves in microwave K band

Energy Technology Data Exchange (ETDEWEB)

Tadesse, Semere A. [Department of Electrical and Computer Engineering, University of Minnesota, Minneapolis, Minnesota 55455 (United States); School of Physics and Astronomy, University of Minnesota, Minneapolis, Minnesota 55455 (United States); Li, Huan; Liu, Qiyu; Li, Mo, E-mail: moli@umn.edu [Department of Electrical and Computer Engineering, University of Minnesota, Minneapolis, Minnesota 55455 (United States)

2015-11-16

Integrating nanoscale electromechanical transducers and nanophotonic devices potentially can enable acousto-optic devices to reach unprecedented high frequencies and modulation efficiency. Here, we demonstrate acousto-optic modulation of a photonic crystal nanocavity using Lamb waves with frequency up to 19 GHz, reaching the microwave K band. The devices are fabricated in suspended aluminum nitride membrane. Excitation of acoustic waves is achieved with interdigital transducers with period as small as 300 nm. Confining both acoustic wave and optical wave within the thickness of the membrane leads to improved acousto-optic modulation efficiency in these devices than that obtained in previous surface acoustic wave devices. Our system demonstrates a scalable optomechanical platform where strong acousto-optic coupling between cavity-confined photons and high frequency traveling phonons can be explored.

Luminescent, optical and electronic properties of La{sub 3}Ta{sub 0.5}Ga{sub 5.5}O{sub 14} single crystals grown in different atmospheres

Energy Technology Data Exchange (ETDEWEB)

Spassky, D.A., E-mail: deris2002@mail.ru [National University of Science and Technology (MISiS), Leninsky Prospekt, 4, Moscow 119049 (Russian Federation); Institute of Physics, University of Tartu, Ravila 14c, Tartu 50411 (Estonia); Skobeltsyn Institute of Nuclear Physics, M.V. Lomonosov Moscow State University, 119991 Moscow (Russian Federation); Brik, M.G. [Institute of Physics, University of Tartu, Ravila 14c, Tartu 50411 (Estonia); College of Sciences, Chongqing University of Posts and Telecommunications, Chongqing 400065 (China); Institute of Physics, Jan Dlugosz University, Armii Krajowej 13/15, PL-42200 Czestochowa (Poland); Kozlova, N.S.; Kozlova, A.P.; Zabelina, E.V. [National University of Science and Technology (MISiS), Leninsky Prospekt, 4, Moscow 119049 (Russian Federation); Buzanov, O.A. [Fomos-Materials, Buzheninova 16, Moscow 107023 (Russian Federation); Belsky, A. [Institute of Light and Matter, CNRS, University Lyon1, Villeurbanne 69622 (France)

2016-09-15

Luminescent, optical and electronic properties of La{sub 3}Ta{sub 0.5}Ga{sub 5.5}O{sub 14} single crystals grown in different atmospheres are presented. The absorption bands at 255, 290, 350 and 480 nm were detected; the intensity of bands increases with the concentration of oxygen in the growth atmosphere. It is shown that the shift of the fundamental absorption edge with the temperature obeys Urbach rule. The corresponding fitting allowed to estimate the slope coefficient σ=0.35, which implies self-trapping of excitons in La{sub 3}Ta{sub 0.5}Ga{sub 5.5}O{sub 14}. Calculations of the band structure, partial densities of states and reflectivity spectra were performed. The bandgap of La{sub 3}Ta{sub 0.5}Ga{sub 5.5}O{sub 14} was determined as E{sub g}=5.6 eV. The luminescence properties under UV, VUV and X-ray excitation were studied. Intrinsic emission band at 440–450 nm is attributed to the excitons self-trapped at TaO{sub 6} molecular complexes. Extrinsic emission bands at 410, 440 and 550 nm are attributed to the emission of excitons trapped by antisite defects, F-centers and oxygen deficient oxyanionic complexes.

On the nature and temperature dependence of the fundamental band gap of In{sub 2}O{sub 3}

Energy Technology Data Exchange (ETDEWEB)

Irmscher, K.; Naumann, M.; Pietsch, M.; Galazka, Z.; Uecker, R.; Schulz, T.; Schewski, R.; Albrecht, M.; Fornari, R. [Leibniz-Institut fuer Kristallzuechtung, Berlin (Germany)

2014-01-15

The onset of optical absorption in In{sub 2}O{sub 3} at about 2.7 eV is investigated by transmission spectroscopy of single crystals grown from the melt. This absorption is not defect related but is due to the fundamental band gap of In{sub 2}O{sub 3}. The corresponding spectral dependence of the absorption coefficient is determined up to α = 2500 cm{sup -1} at a photon energy hν = 3.05 eV at room temperature without indication of saturation. A detailed analysis of the hν dependence of α including low-temperature absorption data shows that the absorption process can be well approximated by indirect allowed transitions. It is suggested that the fundamental band gap of In{sub 2}O{sub 3} is of indirect nature. The temperature dependence of the fundamental band gap is measured over a wide range from 9 to 1273 K and can be well fitted by a single-oscillator model. Compared to other semiconductors the reduction of the gap with increasing temperature is exceptionally strong in In{sub 2}O{sub 3}. (copyright 2014 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Study of luminescence and optical resonances in Sb{sub 2}O{sub 3} micro- and nanotriangles

Energy Technology Data Exchange (ETDEWEB)

Cebriano, Teresa; Mendez, Bianchi, E-mail: bianchi@fis.ucm.es; Piqueras, Javier [Universidad Complutense de Madrid, Departamento de Fisica de Materiales, Facultad de Ciencias Fisicas (Spain)

2012-10-15

Luminescence of micro- and nanotriangles of cubic antimony oxide, Sb{sub 2}O{sub 3} has been investigated by cathodoluminescence (CL) in scanning electron microscope and by photoluminescence (PL) in a laser confocal microscope. The triangles were grown by a thermal evaporation-deposition process with pure antimony powders as precursor, and present a self assembled arrangement covering extended areas of the samples. CL spectra of the triangles show bands at 2-2.5 and 3.1 eV, the latter is not observed in the Sb{sub 2}O{sub 3} initial powder. PL excited by 325 nm laser shows a band at 2.4 eV with a shoulder at 2.75 eV, as well as resonance modes suggesting optical cavity behavior of the triangles. The separation between resonant peaks from different triangles has been correlated with the triangle side length and possible optical paths were obtained according to the Fabry-Perot relationship. These results along with the optical images suggest that not only Fabry-Perot cavity modes, but also whispering gallery modes may occur inside the micro- and nanotriangle structures.

Conduction band edge effective mass of La-doped BaSnO{sub 3}

Energy Technology Data Exchange (ETDEWEB)

James Allen, S., E-mail: allen@itst.ucsb.edu; Law, Ka-Ming [Physics Department, University of California, Santa Barbara, California 93106-5100 (United States); Raghavan, Santosh; Schumann, Timo; Stemmer, Susanne [Materials Department, University of California, Santa Barbara, California 93106-5050 (United States)

2016-06-20

BaSnO{sub 3} has attracted attention as a promising material for applications requiring wide band gap, high electron mobility semiconductors, and moreover possesses the same perovskite crystal structure as many functional oxides. A key parameter for these applications and for the interpretation of its properties is the conduction band effective mass. We measure the plasma frequency of La-doped BaSnO{sub 3} thin films by glancing incidence, parallel-polarized resonant reflectivity. Using the known optical dielectric constant and measured electron density, the resonant frequency determines the band edge electron mass to be 0.19 ± 0.01. The results allow for testing band structure calculations and transport models.

Direct evidence for a systematic evolution of optical band gap and local disorder in Ag, in doped Sb{sub 2}Te phase change material

Energy Technology Data Exchange (ETDEWEB)

Shukla, Krishna Dayal; Sahu, Smriti [Discipline of Electrical Engineering, Indian Institute of Technology Indore (India); Manivannan, Anbarasu [Discipline of Electrical Engineering, Indian Institute of Technology Indore (India); Metallurgical Engineering and Materials Science, Indian Institute of Technology Indore, Indore (India); Deshpande, Uday Prabhakarrao [UGC-DAE Consortium for Scientific Research, Indore (India)

2017-12-15

Rapid and reversible switching properties of Ag, In doped Sb{sub 2}Te (AIST) phase change material is widely used in re-writable optical data storage applications. We report here a systematic evolution of optical band gap (E{sub g}), local disorder (Tauc parameter, β), and Urbach energy (E{sub U}) of AIST material during amorphous to crystalline transition using in situ UV-Vis-NIR spectroscopy. Unlike GeTe-Sb{sub 2}Te{sub 3} (GST) family, AIST material is found to show unique characteristics as evidenced by the presence of direct forbidden transitions. Crystallization is accompanied by a systematic reduction in E{sub g} from 0.50 eV (as-deposited amorphous at 300 K) to 0.18 eV (crystalline at 300 K). Moreover, decrease in E{sub U} (from 272 to 212 meV) and β is also observed during increasing the temperature in the amorphous phase, revealing direct observation of enhancement of the medium-range order and distortion in short range order, respectively. These findings of optical transition would be helpful for distinguishing the unique behavior of AIST material from GST family. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Phonon thermal transport through tilt grain boundaries in strontium titanate

Energy Technology Data Exchange (ETDEWEB)

Zheng, Zexi; Chen, Xiang; Yang, Shengfeng; Xiong, Liming; Chen, Youping [Department of Mechanical and Aerospace Engineering, University of Florida, Gainesville, Florida 32611 (United States); Deng, Bowen; Chernatynskiy, Aleksandr [Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611 (United States)

2014-08-21

In this work, we perform nonequilibrium molecular dynamics simulations to study phonon scattering at two tilt grain boundaries (GBs) in SrTiO{sub 3}. Mode-wise energy transmission coefficients are obtained based on phonon wave-packet dynamics simulations. The Kapitza conductance is then quantified using a lattice dynamics approach. The obtained results of the Kapitza conductance of both GBs compare well with those obtained by the direct method, except for the temperature dependence. Contrary to common belief, the results of this work show that the optical modes in SrTiO{sub 3} contribute significantly to phonon thermal transport, accounting for over 50% of the Kapitza conductance. To understand the effect of the GB structural disorder on phonon transport, we compare the local phonon density of states of the atoms in the GB region with that in the single crystalline grain region. Our results show that the excess vibrational modes introduced by the structural disorder do not have a significant effect on phonon scattering at the GBs, but the absence of certain modes in the GB region appears to be responsible for phonon reflections at GBs. This work has also demonstrated phonon mode conversion and simultaneous generation of new modes. Some of the new modes have the same frequency as the initial wave packet, while some have the same wave vector but lower frequencies.

Hypersonic phononic crystals.

Science.gov (United States)

Gorishnyy, T; Ullal, C K; Maldovan, M; Fytas, G; Thomas, E L

2005-03-25

In this Letter we propose the use of hypersonic phononic crystals to control the emission and propagation of high frequency phonons. We report the fabrication of high quality, single crystalline hypersonic crystals using interference lithography and show that direct measurement of their phononic band structure is possible with Brillouin light scattering. Numerical calculations are employed to explain the nature of the observed propagation modes. This work lays the foundation for experimental studies of hypersonic crystals and, more generally, phonon-dependent processes in nanostructures.

Intense coherent longitudinal optical phonons in CuI thin films under exciton-excitation conditions

International Nuclear Information System (INIS)

Kojima, O.; Mizoguchi, K.; Nakayama, M..

2005-01-01

We have investigated the dynamical properties of the coherent longitudinal optical (LO) phonon in CuI thin films grown on a NaCl substrate by vacuum deposition. The intense coherent LO phonon in the CuI thin film is observed under the exciton-excitation conditions. Moreover, the pump-energy dependence of the amplitude of the coherent LO phonon shows peaks at the heavy-hole and light-hole exciton energies. The enhancement of the coherent LO phonon under the exciton-resonance condition is much larger than that in an ordinary semiconductor quantum well system such as a GaAs/AlAs one. These facts demonstrate that the intense coherent LO phonon is generated under the exciton-excitation condition in a material with a strong exciton-phonon interaction such as CuI

Emergence of an Out-of-Plane Optical Phonon (ZO) Kohn Anomaly in Quasifreestanding Epitaxial Graphene.

Science.gov (United States)

Politano, Antonio; de Juan, Fernando; Chiarello, Gennaro; Fertig, Herbert A

2015-08-14

In neutral graphene, two prominent cusps known as Kohn anomalies are found in the phonon dispersion of the highest optical phonon at q=Γ (LO branch) and q=K (TO branch), reflecting a significant electron-phonon coupling (EPC) to undoped Dirac electrons. In this work, high-resolution electron energy loss spectroscopy is used to measure the phonon dispersion around the Γ point in quasifreestanding graphene epitaxially grown on Pt(111). The Kohn anomaly for the LO phonon is observed at finite momentum q~2k_{F} from Γ, with a shape in excellent agreement with the theory and consistent with known values of the EPC and the Fermi level. More strikingly, we also observe a Kohn anomaly at the same momentum for the out-of-plane optical phonon (ZO) branch. This observation is the first direct evidence of the coupling of the ZO mode with Dirac electrons, which is forbidden for freestanding graphene but becomes allowed in the presence of a substrate. Moreover, we estimate the EPC to be even greater than that of the LO mode, making graphene on Pt(111) an optimal system to explore the effects of this new coupling in the electronic properties.

Theoretical characterization of quaternary iridium based hydrides NaAeIrH{sub 6} (Ae = Ca, Ba and Sr)

Energy Technology Data Exchange (ETDEWEB)

Bouras, S. [Laboratory of Studies Surfaces and Interfaces of Solids Materials, Department of Physics, Faculty of Science, University of Setif 1, 19000 (Algeria); Ghebouli, B., E-mail: bghebouli@yahoo.fr [Laboratory of Studies Surfaces and Interfaces of Solids Materials, Department of Physics, Faculty of Science, University of Setif 1, 19000 (Algeria); Benkerri, M. [Laboratory of Studies Surfaces and Interfaces of Solids Materials, Department of Physics, Faculty of Science, University of Setif 1, 19000 (Algeria); Ghebouli, M.A., E-mail: med.amineghebouli@yahoo.fr [Microelectronic Laboratory (LMSE), University of Bachir Ibrahimi, Bordj-Bou-Arreridj 34000 (Algeria); Research Unit on Emerging Materials (RUEM), University of Setif 1, 19000 (Algeria); Choutri, H. [Microelectronic Laboratory (LMSE), University of Bachir Ibrahimi, Bordj-Bou-Arreridj 34000 (Algeria); Louail, L.; Chihi, T.; Fatmi, M. [Research Unit on Emerging Materials (RUEM), University of Setif 1, 19000 (Algeria); Bouhemadou, A. [Laboratory for Developing New Materials and Their Characterization, Department of Physics, Faculty of Science, University of Setif 1, 19000 (Algeria); Department of Physics and Astronomy, College of Science, King Saud University, P.O. Box 2455, Riyadh 11451 (Saudi Arabia); Khenata, R.; Khachai, H. [Laboratoire de Physique Quantique et de Modélisation Mathématique, Université de Mascara, 29000 (Algeria)

2015-01-15

The quaternary iridium based hydrides NaAeIrH{sub 6} (Ae = Ca, Ba and Sr) are promising candidates as hydrogen storage materials. We have studied the structural, elastic, electronic, optical and thermodynamic properties of NaAeIrH{sub 6} (Ae = Ca, Ba and Sr) within the generalized gradient approximation, the local density approximation (LDA) and mBj in the frame of density functional perturbation theory. These alloys have a large indirect Γ–X band gap. The thermodynamic functions were computed using the phonon density of states. The origin of the possible transitions from valence band to conduction band was illustrated. By using the complex dielectric function, the optical properties such as absorption, reflectivity, loss function, refractive index and optical conductivity have been obtained. - Graphical abstract: Real and imaginary parts of the dielectric function, the absorption spectrum α(ω), reflectivity R(ω) and energy-loss spectrum L(ω). - Highlights: • NaAeIrH{sub 6} (Ae = Ca, Ba and Sr) alloys have been investigated. • The elastic moduli, energy gaps are predicted. • The optical and thermal properties were studied.

Experimental evidence of zone-center optical phonon softening by accumulating holes in thin Ge

Directory of Open Access Journals (Sweden)

Shoichi Kabuyanagi

2016-01-01

Full Text Available We discuss the impact of free carriers on the zone-center optical phonon frequency in germanium (Ge. By taking advantage of the Ge-on-insulator structure, we measured the Raman spectroscopy by applying back-gate bias. Phonon softening by accumulating holes in Ge film was clearly observed. This fact strongly suggests that the phonon softening in heavily-doped Ge is mainly attributed to the free carrier effect rather than the dopant atom counterpart. Furthermore, we propose that the free carrier effect on phonon softening is simply understandable from the viewpoint of covalent bonding modification by free carriers.

The effects of heat treatment on optical, structural, electrochromic and bonding properties of Nb{sub 2}O{sub 5} thin films

Energy Technology Data Exchange (ETDEWEB)

Coşkun, Özlem Duyar, E-mail: duyar@hacettepe.edu.tr [Hacettepe University, Department of Physics Engineering, Thin Film Preparation and Characterization Laboratory, Ankara (Turkey); Demirel, Selen, E-mail: nymph24@gmail.com [Hacettepe University, Department of Physics Engineering, Thin Film Preparation and Characterization Laboratory, Ankara (Turkey); Hacettepe University, Nanotechnology and Nanomedicine Department, Ankara (Turkey); Atak, Gamze, E-mail: gbaser@hacettepe.edu.tr [Hacettepe University, Department of Physics Engineering, Thin Film Preparation and Characterization Laboratory, Ankara (Turkey)

2015-11-05

Nb{sub 2}O{sub 5} thin films were deposited onto heated glass substrates by RF magnetron sputtering using a Nb{sub 2}O{sub 5} target. The films were annealed in air at temperatures between 400 and 700 °C for 6 h. Effects of the crystalline structure on optical, structural, electrochromic and bonding properties of the Nb{sub 2}O{sub 5} thin films were investigated by X-ray diffraction, atomic force microscopy, X-ray photoelectron spectroscopy, optical spectrophotometry and electrochemical measurements. The film refractive index varied between 2.09 and 2.22 at the wavelength of 550 nm depending on the annealing temperature. The decrease of the optical band gap revealed for the films with increasing annealing temperature is attributed to oxygen-ion vacancies in the film structure. The orthorhombic structure of Nb{sub 2}O{sub 5} films resulted in good electrochromic properties with high colouration efficiencies of 19.56 cm{sup 2}/C and 53.24 cm{sup 2}/C at 550 nm and 1000 nm, respectively. The optical, structural and electrochromic properties of the different crystalline polymorphic forms of the Nb{sub 2}O{sub 5} films make them attractive for optical applications. - Highlights: • Stoichiometric Nb{sub 2}O{sub 5} films prepared using RF magnetron sputtering technique. • The different crystalline forms of Nb{sub 2}O{sub 5} thin films obtained by annealing. • The optical, structural and electrochromic properties of the films were investigated. • The optical band gap decreased with increasing annealing temperature. • The orthorhombic T-Nb{sub 2}O{sub 5} films exhibited a higher colouration efficiency.

Performance of cubic ZrO{sub 2} doped CeO{sub 2}: First-principles investigation on elastic, electronic and optical properties of Ce{sub 1−x} Zr{sub x}O{sub 2}

Energy Technology Data Exchange (ETDEWEB)

Tian, Dong [State Key Laboratory of Complex Nonferrous Metal Resources Clean Utilization, Kunming University of Science and Technology, Kunming 650093, Yunnan (China); Faculty of Metallurgical and Energy Engineering, Kunming University of Science and Technology, Kunming 650093, Yunnan (China); Zeng, Chunhua, E-mail: zchh2009@126.com [State Key Laboratory of Complex Nonferrous Metal Resources Clean Utilization, Kunming University of Science and Technology, Kunming 650093, Yunnan (China); Faculty of Science, Kunming University of Science and Technology, Kunming 650093, Yunnan (China); Wang, Hua, E-mail: wanghuaheat@hotmail.com [State Key Laboratory of Complex Nonferrous Metal Resources Clean Utilization, Kunming University of Science and Technology, Kunming 650093, Yunnan (China); Luo, Hongchun [Faculty of Science, Kunming University of Science and Technology, Kunming 650093, Yunnan (China); Cheng, Xianming [State Key Laboratory of Complex Nonferrous Metal Resources Clean Utilization, Kunming University of Science and Technology, Kunming 650093, Yunnan (China); Faculty of Metallurgical and Energy Engineering, Kunming University of Science and Technology, Kunming 650093, Yunnan (China); Xiang, Chao [College of Mechanical and Electrical Engineering, Yangtze Normal University, Fuling 408100, Chongqing (China); Wei, Yonggang; Li, Kongzhai; Zhu, Xing [State Key Laboratory of Complex Nonferrous Metal Resources Clean Utilization, Kunming University of Science and Technology, Kunming 650093, Yunnan (China); Faculty of Metallurgical and Energy Engineering, Kunming University of Science and Technology, Kunming 650093, Yunnan (China)

2016-06-25

The structural, elastic, electronic and optical properties of Ce{sub 1−x} Zr{sub x}O{sub 2} (x = 0, 0.25, 0.5, 0.75, 1) fluorite type oxides are studied by researchers using the method of density functional theory (DFT) + U method. The calculated equilibrium lattice parameter, cell volume, elastic and optical properties for CeO{sub 2} and ZrO{sub 2} are all in good agreement with the available experimental data and other theoretical results. It is found that Ce substituted by Zr leads to the formation of the pseudo-cubic fluorite-type structure. With doping concentration × increasing, the lattice parameter, cell volume and the bond length of d{sub Ce−O} and d{sub Zr−O} decrease linearly. It is interesting to find that the hardness of materials increase with Zr concentration increasing. For Ce{sub 0.75} Zr{sub 0.25} O{sub 2}, we also find that its ductility is good. Meanwhile, the range of the conduction band energy in the doped system becomes wider than that in the undoped system. The overlapping band phenomenon occur for all substitutions in Ce{sub 1−x} Zr{sub x}O{sub 2} (from x = 0.25 to x = 0.75), especially for the structure of Ce{sub 0.5} Zr{sub 0.5} O{sub 2} and Ce{sub 0.25} Zr{sub 0.75} O{sub 2}, its second band gaps almost disappear. Based on the dielectric functions obtained, it is shown that the static dielectric constant ε{sub 0} and refractive index n{sub 0} obviously decrease with Zr concentration increasing. After discussing, we know that CeO{sub 2} is suitable as a useful high-refractive index film material in single and multilayered optical coatings, whereas ZrO{sub 2} can be used as gate-dielectric materials in metal-oxide semiconductor (MOS) devices, in metallurgy and as a thermal barrier coating in engines. - Highlights: • Structural, and optical properties of fluorite type oxides are studied; • Ce substituted by Zr leads to formation of pseudo-cubic fluorite-type structure; • Hardness of materials are increased with Zr

Phonon induced optical gain in a current carrying two-level quantum dot

Energy Technology Data Exchange (ETDEWEB)

Eskandari-asl, Amir, E-mail: amir.eskandari.asl@gmail.com [Department of Physics, Shahid Beheshti University, G.C. Evin, Tehran 1983963113 (Iran, Islamic Republic of); School of Nano Science, Institute for Research in Fundamental Sciences (IPM), P.O. Box: 19395-5531, Tehran, Iran (Iran, Islamic Republic of)

2017-05-15

In this work we consider a current carrying two level quantum dot (QD) that is coupled to a single mode phonon bath. Using self-consistent Hartree-Fock approximation, we obtain the I-V curve of QD. By considering the linear response of our system to an incoming classical light, we see that depending on the parametric regime, the system could have weak or strong light absorption or may even show lasing. This lasing occurs at high enough bias voltages and is explained by a population inversion considering side bands, while the total electron population in the higher level is less than the lower one. The frequency at which we have the most significant lasing depends on the level spacing and phonon frequency and not on the electron-phonon coupling strength.

Design and Fabrication Challenges for Millimeter-Scale Three-Dimensional Phononic Crystals

Directory of Open Access Journals (Sweden)

Frieder Lucklum

2017-11-01

Full Text Available While phononic crystals can be theoretically modeled with a variety of analytical and numerical methods, the practical realization and comprehensive characterization of complex designs is often challenging. This is especially important for the nearly limitless possibilities of periodic, three-dimensional structures. In this contribution, we take a look at these design and fabrication challenges of different 3D phononic elements based on recent research using additive manufacturing. Different fabrication technologies introduce specific limitations in terms of, e.g., material choices, minimum feature size, aspect ratios, or support requirements that have to be taken into account during design and theoretical modeling. We discuss advantages and disadvantages of additive technologies suitable for millimeter and sub-millimeter feature sizes. Furthermore, we present comprehensive experimental characterization of finite, simple cubic lattices in terms of wave polarization and propagation direction to demonstrate the substantial differences between complete phononic band gap and application oriented directional band gaps of selected propagation modes.

Optical and photoelectrochemical studies on Ag{sub 2}O/TiO{sub 2} double-layer thin films

Energy Technology Data Exchange (ETDEWEB)

Li, Chuan, E-mail: cli10@yahoo.com [Department of Biomedical Engineering, National Yang Ming University, Taipei, Taiwan 11221 (China); Department of Mechanical Engineering, National Central University, Jhongli, Taoyuan, Taiwan 32001 (China); Hsieh, J.H. [Department of Materials Engineering, Ming Chi University of Technology, Taishan, Taipei, Taiwan 24301 (China); Cheng, J.C. [Department of Electronic Engineering, National Taipei University of Technology, Taipei, Taiwan 10608 (China); Huang, C.C. [Department of Biomedical Engineering, National Yang Ming University, Taipei, Taiwan 11221 (China)

2014-11-03

When two different oxides films stacked together, if the absorption (upper) layer has both its conduction and valence bands more negatively lower than that of the layer underneath, then the photo-excited electrons can be forwarded to the underneath layer to become an effect of energy storage. Recent studies discovered that the double-layers of Cu{sub 2}O/TiO{sub 2} films possess such capacity. In order to investigate this specific phenomenon, we use a DC magnetron reactive sputtering to deposit a double-layer of Ag{sub 2}O/TiO{sub 2} films on glass substrate. The film thicknesses of the double-layer are 300 nm and 200 nm respectively. X-Ray diffraction (XRD), scanning electron microscope (SEM) and UV–VIS–NIR photospectrometer and photoluminance tests were used to study the structure, morphology, optical absorption and band gaps of the stacked films. From XRD and SEM, we can confirm the microstructures of each layer. The UV–VIS–NIR spectrum revealed that the optical absorption of Ag{sub 2}O/TiO{sub 2} fell in between the single film of Ag{sub 2}O and TiO{sub 2}. Further, two band gaps were estimated for Ag{sub 2}O/TiO{sub 2} films based on the Beer-Lambert law and Tauc plot. Photoluminance and photoelectrochemical tests indicated that delayed emission by electron-hole recombination and photoelectrical current was effectively support the mechanism of electrons transfer from Ag{sub 2}O to TiO{sub 2} at Ag{sub 2}O/TiO{sub 2} interface in the double-layer films. - Highlights: • A double-layer of Ag{sub 2}O/TiO{sub 2} films was deposited on glass substrate by sputtering. • XRD confirms the nanocrystalline structures of the stack deposited films. • UV–VIS–NIR spectroscopy shows the enhanced of optical absorption in Ag{sub 2}O/TiO{sub 2}. • Photoluminance and photoelectrochemical tests show electron-hole separation effect.

Structural and optical properties of glancing angle deposited In{sub 2}O{sub 3} columnar arrays and Si/In{sub 2}O{sub 3} photodetector

Energy Technology Data Exchange (ETDEWEB)

Mondal, A.; Shougaijam, B.; Goswami, T.; Dhar, J.C.; Singh, N.K. [National Institute of Technology, Department of Electronics and Communication Engineering, Agartala (India); Choudhury, S. [North Eastern Hill University, Department of Electronics and Communication Engineering, Shillong (India); Chattopadhay, K.K. [Jadavpur University, Department of Physics, Kolkata (India)

2014-04-15

Ordered and perpendicular columnar arrays of In{sub 2}O{sub 3} were synthesized on conducting ITO electrode by a simple glancing angle deposition (GLAD) technique. The as-deposited In{sub 2}O{sub 3} columns were investigated by field emission gun-scanning electron microscope (FEG-SEM). The average length and diameter of the columns were estimated ∝400 nm and ∝100 nm, respectively. The morphology of the structure was examined by transmission electron microscopy (TEM). X-ray diffraction (XRD) analysis shows the polycrystalline nature of the sample which was verified by selective area electron diffraction (SAED) analysis. The growth mechanism and optical properties of the columns were also discussed. Optical absorption shows that In{sub 2}O{sub 3} columns have a high band to band transition at ∝3.75 eV. The ultraviolet and green emissions were obtained from the In{sub 2}O{sub 3} columnar arrays. The P-N junction was formed between In{sub 2}O{sub 3} and P-type Si substrate. The GLAD synthesized In{sub 2}O{sub 3} film exhibits low current conduction compared to In{sub 2}O{sub 3} TF. However, the Si/GLAD-In{sub 2}O{sub 3} detector shows ∝1.5 times enhanced photoresponsivity than that of Si/In{sub 2}O{sub 3} TF. (orig.)

Optical characterization in Pb(Zr{sub 1-x} Ti{sub x}){sub 1-y} Nb{sub y} O{sub 3} ferroelectric ceramic system

Energy Technology Data Exchange (ETDEWEB)

Durruthy-Rodriguez, M.D. [Instituto de Cibernetica, Matematica y Fisica, CITMA, Departamento de Fisica Aplicada, La Habana (Cuba); CINVESTAV-Unidad Queretaro, IPN, Santiago de Queretaro, Queretaro (Mexico); Costa-Marrero, J.; Hernandez-Garcia, M. [Instituto de Cibernetica, Matematica y Fisica, CITMA, Departamento de Fisica Aplicada, La Habana (Cuba); Calderon-Pinar, F. [Universidad de La Habana, Laboratorio de Magnetismo, Instituto de Ciencia y Tecnologia de Materiales, La Habana (Cuba); Malfatti, Celia [Universidade Federal do Rio Grande do Sul, Departamento de Metalurgia, Escola de Engenharia, Porto Alegre, RS (Brazil); Yanez-Limon, J.M. [CINVESTAV-Unidad Queretaro, IPN, Santiago de Queretaro, Queretaro (Mexico)

2011-05-15

In this work, visible photoluminescence was observed at room temperature in a sintered Pb(Zr{sub 1-x}Ti{sub x}){sub 1-y}Nb{sub y}O{sub 3} perovskite-type structure system, doped with Nb using the next excitation bands 325, 373 and 457 nm. The intensity and energy of such emissions have been studied by changing the Nb concentration (0bands become visible at energies of 1.73, 2.56 and 3.35 eV. The results reveal the role of the Nb{sup 5+} ion substitutions by Zr{sup 4+} or Ti{sup 4+} ions and the symmetry presented in the rhombohedral or tetragonal side of the MPB. Raman spectra which are similar for compositions: 20/80, 40/60 and 53/47 (tetragonal phases) show nine bands, centered around 137, 194, 269, 331, 434, 550, 612, 712 and 750 cm{sup -1}. The spectra for samples 60/40 and 80/20, rhombohedral phase, show significant differences, only six bands appear, centered around 124, 209, 234, 330, 549 and 682 cm{sup -1}. In addition, optical absorption spectroscopy, structural and micro-structural measurements were carried out by using Uv-vis spectroscopy, X-ray diffraction and scanning electron microscopy techniques, respectively. The experimental results of band gap energy, e.g., in our samples are in accordance with the findings by J. Baedi et al. in the calculations of band structure, energy gap and density of states for different phases of Pb(Zr{sub 1-x} Ti{sub x})O{sub 3} using density functional theory (DFT). (orig.)

Tunable infrared reflectance by phonon modulation

Science.gov (United States)

Ihlefeld, Jon F.; Sinclair, Michael B.; Beechem, III, Thomas E.

2018-03-06

The present invention pertains to the use of mobile coherent interfaces in a ferroelectric material to interact with optical phonons and, ultimately, to affect the material's optical properties. In altering the optical phonon properties, the optical properties of the ferroelectric material in the spectral range near-to the phonon mode frequency can dramatically change. This can result in a facile means to change to the optical response of the ferroelectric material in the infrared.

Gamma-irradiation effects on optical properties of lexan film. Vol. 2

Energy Technology Data Exchange (ETDEWEB)

Abd-Elrehim, N; El-Samahy, A E; Kassem, M E [Physics Department, Faculty of Science, Alexandria University. (Egypt); Abou-Taleb, W M [Physics and Chemistry Department, Faculty of Education, Alexandria University. (Egypt)

1996-03-01

The optical absorption method is a powerful tool for studying the optically induced transitions and for determining the energy gap in crystalline and non-crystalline materials. The absorption spectra in the lower energy part sheds light on the atomic vibrations. While the higher energy parts of the spectrum manifest the electronic states in the atoms. Effect of gamma-irradiation on the optical properties of plastic detector (Lexan film) has been studied. These investigations were carried out for gamma-doses from 10 kGy -2 mGy to determine the optical parameters; optical energy gap E{sub op}, absorption coefficient {alpha} , absorption index K, mobility energy gap E{sub g}, absorption band edge {lambda}{sub g} and the absorbance at wavelength 340 nm. The results showed that both direct and indirect transitions existed in lexan detector, and because highly sensitive to gamma-irradiation doses. The variations of optical energy gap with gamma-irradiation doses can be explained as the change in the degree of disorder and the phonon energy E{sub p}, is dose dependent. 7 figs.

Phase transformations in multiferroic Bi{sub 1−x}La{sub x}Fe{sub 1−y}Ti{sub y}O{sub 3} ceramics probed by temperature dependent Raman scattering

Energy Technology Data Exchange (ETDEWEB)

Xu, L. P.; Zhang, X. L.; Zhang, J. Z.; Hu, Z. G., E-mail: zghu@ee.ecnu.edu.cn; Chu, J. H. [Key Laboratory of Polar Materials and Devices, Ministry of Education, Department of Electronic Engineering, East China Normal University, Shanghai 200241 (China); Zhang, L. L.; Yu, J. [Functional Material Research Laboratory, Tongji University, Shanghai 200092 (China)

2014-10-28

Optical phonons and phase transitions of Bi{sub 1−x}La{sub x}Fe{sub 1−y}Ti{sub y}O{sub 3} (BLFTO, 0.02 ≤ x ≤ 0.12, 0.01 ≤ y ≤ 0.08) ceramics have been investigated by Raman scattering in the temperature range from 80 to 680 K. Four phase transitions around 140, 205, 570, and 640 K can be observed. The Raman modes are sensitive to the spin reorientation around 140 and 205 K, owing to the strong magnon-phonon coupling. The transformation around 570 K is a structural transition from rhombohedral to orthorhombic phase due to an external pressure induced by the chemical substitution. The anomalies of the phonon frequencies near Néel temperature T{sub N} have been discussed in the light of the multiferroicity. Moreover, it was found that the structural transition temperature and T{sub N} of BLFTO ceramics decrease towards room temperature with increasing doping composition as a result of size mismatch between substitution and host cations.

Infrared reflectivity investigation of the phase transition sequence in Pr{sub 0.5}Ca{sub 0.5}MnO{sub 3}

Energy Technology Data Exchange (ETDEWEB)

Ribeiro, J.L., E-mail: jlr@fisica.uminho.pt [Centro and Departamento de Física da Universidade do Minho, Campus de Gualtar, 4710-057 Braga (Portugal); Vieira, L.G. [Centro and Departamento de Física da Universidade do Minho, Campus de Gualtar, 4710-057 Braga (Portugal); Gomes, I.T. [Centro and Departamento de Física da Universidade do Minho, Campus de Gualtar, 4710-057 Braga (Portugal); IFIMUP and IN - Institute of Nanoscience and Nanotechnology, Departamento de Física e Astronomia da Faculdade de Ciências da Universidade do Porto, R. do Campo Alegre, 687, 4769-007 Porto (Portugal); Araújo, J.P. [IFIMUP and IN - Institute of Nanoscience and Nanotechnology, Departamento de Física e Astronomia da Faculdade de Ciências da Universidade do Porto, R. do Campo Alegre, 687, 4769-007 Porto (Portugal); Tavares, P. [Centro de Química – Vila Real, Universidade de Trás-os-Montes e Alto Douro, 5001-801 Vila Real (Portugal); Almeida, B.G. [Centro and Departamento de Física da Universidade do Minho, Campus de Gualtar, 4710-057 Braga (Portugal)

2016-06-15

This work reports an infrared reflectivity study of the phase transition sequence observed in Pr{sub 0.5}Ca{sub 0.5}MnO{sub 3.} The need to measure over an extended spectral range in order to properly take into account the effects of the high frequency polaronic absorption is circumvented by adopting a simple approximate method, based on the asymmetry present in the Kramers Kronig inversion of the phonon spectrum. The temperature dependence of the phonon optical conductivity is then investigated by monitoring the behavior of three relevant spectral moments of the optical conductivity. This combined methodology allows us to disclose subtle effects of the orbital, charge and magnetic orders on the lattice dynamics of the compound. The characteristic transition temperatures inferred from the spectroscopic measurements are compared and correlated with those obtained from the temperature dependence of the induced magnetization and electrical resistivity. - Highlights: • Study of the effects of orbital, charge and spin orders on the lattice dynamics. • Phonon optical conductivity spectral moments are used to monitor phase transitions. • Precursor effects of the AFM order are detected by infrared spectroscopy.

Synthesis and Optical Investigations of the Guest-Host Nanostructures Alumina-SiC and Alumina-In{sub 2}O{sub 3}

Energy Technology Data Exchange (ETDEWEB)

Bouifoulen, A; Kassiba, A; Edely, M [Laboratoire de Physique de l' Etat Condense, UMR-CNRS 6087, Institut de recherche IRIM2F-FR-CNRS 2575-Universite du Maine, Avenue Olivier Messiaen, 72085 Le Mans Cedex 9 (France); Outzourhit, A; Oueriagli, A [Laboratoire de Physique du Solide et Couches Minces, Faculte des Sciences Semlalia, Universite Cadi Ayyad, B. P. 2390, Marrakech 40000, Maroc (Morocco); Makowska-Janusik, M [Institute of Physics, Al. Armii.Krajowej, 13/15, J. Dlugosz University, 42-200 Czestochowa (Poland); Szade, J, E-mail: kassiba@univ-lemans.fr [A.Chelkowski Institute of Physics - University Slaski in Katowice - 40-219 Katowice (Poland)

2011-04-01

Several strategies were developed to synthesise two classes of nanostructured thin films with nanocrystals of SiC (nc-SiC) or In{sub 2}O{sub 3} (nc-In{sub 2}O{sub 3}) confined in alumina. The syntheses were performed by using Rf-sputtering and co-pulverisation process of the suitable reactants. Thus, Al{sub 2}O{sub 3}/nc-SiC and Al{sub 2}O{sub 3}/nc-In{sub 2}O{sub 3} composite thin films were obtained and their structural and optical features analyzed respectively by XRD, XPS and UV-VIS absorption. The deposition conditions and the post-synthesis treatments were optimized in order to improve the crystalline character of confined nanocrystals. The optical properties were compared in the range 200 nm-1200 nm for bare alumina films or nanostructured ones with the semiconducting nanocrystals. The direct and indirect band band gaps were evaluated and discussed with regard to the stoechiometry and morphologies of the nanocomposite films

Spin-phonon coupling in rod-shaped half-metallic CrO sub 2 ultrafine particles: a magnetic Raman scattering study

CERN Document Server

Yu, T; Sun, W X; Lin, J Y; Ding, J

2003-01-01

Half-metallic CrO sub 2 powder compact with rod-shaped nanoparticles was studied by micro-Raman scattering in the presence of an external magnetic field at room temperature (300 K). In the low-field region (H <= 250 mT), the frequency and intensity of the E sub g mode, an internal phonon mode of CrO sub 2 , increase dramatically with increase in the magnetic field, while the corresponding linewidth decreases. The above parameters become constant when the CrO sub 2 powder enters the saturation state at higher magnetic field. The pronounced anomalies of the Raman phonon parameters under a low magnetic field are attributed to the spin-phonon coupling enhanced by the magnetic ordering, which is induced by the external magnetic field. (letter to the editor)

Electronic polarizability, optical basicity and interaction parameter for Nd{sub 2}O{sub 3} doped lithium-zinc-phosphate glasses

Energy Technology Data Exchange (ETDEWEB)

Algradee, M.A.; Sultan, M.; Samir, O.M.; Alwany, A.E.B. [Ibb University, Department of Physics, Faculty of Science, Ibb (Yemen)

2017-08-15

The Nd{sup 3+}-doped lithium-zinc-phosphate glasses were prepared by means of conventional melt quenching method. X-ray diffraction results confirmed the glassy nature of the studied glasses. The physical parameters such as the density, molar volume, ion concentration, polaron radius, inter-ionic distance, field strength and oxygen packing density were calculated using different formulae. The transmittance and reflectance spectra of glasses were recorded in the wavelength range 190-1200 nm. The values of optical band gap and Urbach energy were determined based on Mott-Davis model. The refractive indices for the studied glasses were evaluated from optical band gap values using different methods. The average electronic polarizability of the oxide ions, optical basicity and an interaction parameter were investigated from the calculated values of the refractive index and the optical band gap for the studied glasses. The variations in the different physical and optical properties of glasses with Nd{sub 2}O{sub 3} content were discussed in terms of different parameters such as non-bridging oxygen and different concentrations of Nd cation in glass system. (orig.)

Optical absorption and spectroscopic properties of thulium doped (TeO{sub 2})(Nb{sub 2}O{sub 5})(TiO{sub 2}) glasses

Energy Technology Data Exchange (ETDEWEB)

Kabalci, Idris [Department of Physics Education, Education Faculty, Harran University, Sanliurfa (Turkey); Tay, Turgay [Department of Chemistry, Science Faculty, Anadolu University, Eskisehir (Turkey); Oezen, Goenuel [Department of Physics, Science and Arts Faculty, Istanbul Technical University, Istanbul (Turkey)

2011-09-15

A type of thulium doped tellurite based optical glasses was prepared through conventional melt quenching technique. In the experiments, the effect of different Tm{sup 3+} ion concentration and glass composition on optical properties of (TeO{sub 2}){sub (1-x-y)}(Nb{sub 2}O{sub 5}){sub (x)}(TiO{sub 2}){sub (y)} (x=0.05, 0.10, 0.15, and 0.20 mol) glasses have been investigated by using UV-VIS-NIR optical spectrophotometry measurements in a wavelength range 400-2000 nm. Considering absorption measurements for the 1.0mol% Tm{sup 3+} doped of (TeO{sub 2}){sub 0.9}(Nb{sub 2}O{sub 5}){sub 0.05}(TiO{sub 2}){sub 0.05} glass, {sup 1}G{sub 4}, {sup 3}F{sub 2}, {sup 3}F{sub 3}, {sup 3}F{sub 4}, {sup 3}H{sub 5}, and {sup 3}H{sub 4} absorption bands were observed from the {sup 3}H{sub 6} ground level, at 463, 660, 687, 793, 1211 and 1700 nm wavelengths, respectively. Furthermore, spontaneous emission probabilities, and the radiative lifetimes for the 4f-4f transitions of the Tm{sup 3+} ions were calculated. The spectral intensities were determined in terms of Judd-Ofelt parameters ({omega}{sub 2}, {omega}{sub 4}, {omega}{sub 6}). Luminescence analysis was realized for the different Tm{sup 3+} ion concentration (0.002, 0.005 and 0.01mol) at room temperature. The luminescence band intensity of the {sup 3}F{sub 4}{yields}{sup 3}H{sub 4} transition was measured as a function of Tm{sup 3+} ion concentration (0.002, 0.005 and 0.01mol). Furthermore, luminescence data of the thulium doped glass samples were used to determine the compositional dependence of the emission cross sections at 1470 nm (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Tunable infrared reflectance by phonon modulation

Energy Technology Data Exchange (ETDEWEB)

Ihlefeld, Jon F.; Sinclair, Michael B.; Beechem, III, Thomas E.

2018-03-06

The present invention pertains to the use of mobile coherent interfaces in a ferroelectric material to interact with optical phonons and, ultimately, to affect the material's optical properties. In altering the optical phonon properties, the optical properties of the ferroelectric material in the spectral range near-to the phonon mode frequency can dramatically change. This can result in a facile means to change to the optical response of the ferroelectric material in the infrared.

Tunability of band structures in a two-dimensional magnetostrictive phononic crystal plate with stress and magnetic loadings

Energy Technology Data Exchange (ETDEWEB)

Zhang, Shunzu; Shi, Yang [Key Laboratory of Mechanics on Disaster and Environment in Western China attached to the Ministry of Education of China, Lanzhou University, Lanzhou, Gansu 730000 (China); Department of Mechanics and Engineering Sciences, College of Civil Engineering and Mechanics, Lanzhou University, Lanzhou, Gansu 730000 (China); Gao, Yuanwen, E-mail: ywgao@lzu.edu.cn [Key Laboratory of Mechanics on Disaster and Environment in Western China attached to the Ministry of Education of China, Lanzhou University, Lanzhou, Gansu 730000 (China); Department of Mechanics and Engineering Sciences, College of Civil Engineering and Mechanics, Lanzhou University, Lanzhou, Gansu 730000 (China)

2017-03-26

Considering the magneto-mechanical coupling of magnetostrictive material, the tunability of in-plane wave propagation in two-dimensional Terfenol-D/epoxy phononic crystal (PC) plate is investigated theoretically by the plane wave expansion method. Two Schemes, i.e. magnetic field is rotated in x–y plane and x–z plane, are studied, respectively. The effects of amplitude and direction of magnetic field, pre-stress and geometric parameters are discussed. For Scheme-I, band gap reaches the maximum at an optimal angle 45° of magnetic field. However, the optimal angle is 0° for Scheme-II, because band gap decreases monotonically until disappears with the increasing angle. For both cases, higher-order band gaps generate and become stronger as magnetic field amplitude increases, while increasing compressive pre-stress has the opposite effect. Meanwhile, filling fraction plays a key role in controlling band gaps. These results provide possibility for intelligent regulation and optimal design of PC plates. - Highlights: • The in-plane wave propagation in phononic crystal thin plate is tuned theoretically. • Magnetostrictive material is introduced in the study. • The effects of magnetic field and pre-stress are considered. • The variations of band gaps with external stimuli are discussed.

Light induced superconductivity in underdoped YBa{sub 2}Cu{sub 3}O{sub x}

Energy Technology Data Exchange (ETDEWEB)

Kaiser, Stefan [Max-Planck-Institut fuer die Struktur und Dynamik der Materie, Hamburg (Germany); Max-Planck-Institut fuer Festkoerperforschung, Stuttgart (Germany); 4. Physikalisches Institut und Research Center SCoPE, Uni Stuttgart (Germany); Nicoletti, Daniele; Hunt, Cassi; Hu, Wanzheng; Mankowsky, Roman; Foerst, Michael; Gierz, Isabella; Cavalleri, Andrea [Max-Planck-Institut fuer die Struktur und Dynamik der Materie, Hamburg (Germany); Loew, Toshinao; LeTacon, Mathieu; Keimer, Bernhard [Max-Planck-Institut fuer Festkoerperforschung, Stuttgart (Germany)

2015-07-01

Photo-stimulation with femtosecond mid-infrared pulses allows us to induce an inhomogeneous non-equilibrium superconducting state in YBa{sub 2}Cu{sub 3}O{sub x} at temperatures as high as 300 K. Its transient response is probed via THz time-domain spectroscopy. We measure and characterize its complex optical response above and below the superconducting transition temperature T{sub c}: Below T{sub c}, we find an enhancement of the optical signatures of superconducting coherence. Above T{sub c} we find that the incoherent optical properties at equilibrium become highly coherent with optical signatures very similar to the ones for superconductors below T{sub c}. In the course of understanding these observations, ultrafast x-ray experiments at LCLS allow us observing reconstructed crystal structure in the transient superconducting state and the influence of competing CDW-order to the phonon-excitation.

Compositional dependence of the band-gap of Ge{sub 1−x−y}Si{sub x}Sn{sub y} alloys

Energy Technology Data Exchange (ETDEWEB)

Wendav, Torsten, E-mail: wendav@physik.hu-berlin.de [AG Theoretische Optik & Photonik, Humboldt Universität zu Berlin, Newtonstr. 15, 12489 Berlin (Germany); Fischer, Inga A.; Oehme, Michael; Schulze, Jörg [Institut für Halbleitertechnik, Universität Stuttgart, Pfaffenwaldring 47, 70569 Stuttgart (Germany); Montanari, Michele; Zoellner, Marvin Hartwig; Klesse, Wolfgang [IHP, Im Technologiepark 25, 15236 Frankfurt (Oder) (Germany); Capellini, Giovanni [IHP, Im Technologiepark 25, 15236 Frankfurt (Oder) (Germany); Dipartimento di Scienze, Università Roma Tre, Viale Marconi 446, 00146 Roma (Italy); Driesch, Nils von den; Buca, Dan [Peter Grünberg Institute 9 (PGI 9) and JARA-Fundamentals of Future Information Technologies, Forschungszentrum Jülich, 52428 Jülich (Germany); Busch, Kurt [AG Theoretische Optik & Photonik, Humboldt Universität zu Berlin, Newtonstr. 15, 12489 Berlin (Germany); Max-Born-Institut, Max-Born-Str. 2 A, 12489 Berlin (Germany)

2016-06-13

The group-IV semiconductor alloy Ge{sub 1−x−y}Si{sub x}Sn{sub y} has recently attracted great interest due to its prospective potential for use in optoelectronics, electronics, and photovoltaics. Here, we investigate molecular beam epitaxy grown Ge{sub 1−x−y}Si{sub x}Sn{sub y} alloys lattice-matched to Ge with large Si and Sn concentrations of up to 42% and 10%, respectively. The samples were characterized in detail by Rutherford backscattering/channeling spectroscopy for composition and crystal quality, x-ray diffraction for strain determination, and photoluminescence spectroscopy for the assessment of band-gap energies. Moreover, the experimentally extracted material parameters were used to determine the SiSn bowing and to make predictions about the optical transition energy.

Optical properties of Au–TiO{sub 2} and Au–SiO{sub 2} granular metal thin films studied by Spectroscopic Ellipsometry

Energy Technology Data Exchange (ETDEWEB)

Bakkali, H., E-mail: hicham.bakkali@mail.uca.es [Departamento de Física de la Materia Condensada and Instituto de Microscopía Electrónica y Materiales (IMEYMAT), Universidad de Cadiz, 11510 Puerto Real, Cádiz (Spain); Centro de Ciencias Aplicadas y Desarrollo Tecnológico (CCADET), Universidad Nacional Autónoma de México (UNAM), México, D.F. 04510 (Mexico); Blanco, E.; Dominguez, M. [Departamento de Física de la Materia Condensada and Instituto de Microscopía Electrónica y Materiales (IMEYMAT), Universidad de Cadiz, 11510 Puerto Real, Cádiz (Spain); Mora, M.B. de la [CONACyT Research Fellow-CCADET, Universidad Nacional Autónoma de México (UNAM), México, D.F. 04510 (Mexico); Sánchez-Aké, C.; Villagrán-Muniz, M. [Centro de Ciencias Aplicadas y Desarrollo Tecnológico (CCADET), Universidad Nacional Autónoma de México (UNAM), México, D.F. 04510 (Mexico)

2017-05-31

Highlights: • Gold NPs embedded in TiO{sub 2} or SiO{sub 2} are fabricated by single RF magnetron sputtering. • Films thickness and optical constants are determined by Spectroscopic Ellipsometry. - Abstract: We report on the optical properties in the dielectric regime of gold nanostructured granular thin films fabricated through sputter deposition with a composite target at room temperature and over a wide photon energy range (0.62–4.13 eV) by means of Spectroscopic Ellipsometry. The thickness and the films effective optical constants are successfully determined using an approach based on multiple Gaussian oscillators. In the quasi-static regime, i.e., 2R ≪ λ, and in the dipole approximation, examining the real and imaginary parts, ε{sub 1}, ε{sub 2}, of the dielectric function, it is shown that the dc optical conductivity is almost negligible (σ = ωε{sub 0}ε{sub 2} ≪ 10{sup −5} Ω cm{sup −1}) and only the capacitive contribution holds for the electron-phonon relaxation in localized surface plasmon of the gold particles. Furthermore, we find that the resonant frequencies ω{sub p} becomes red-shifted when the particles are electromagnetically coupled to each other or when the surrounding medium dielectric constant, ε{sub m}, increases, thus exhibiting a wide spectral tuning range of 1.95–2.24 eV.

Electron-phonon interaction and scattering in Si and Ge: Implications for phonon engineering

International Nuclear Information System (INIS)

Tandon, Nandan; Albrecht, J. D.; Ram-Mohan, L. R.

2015-01-01

We report ab-initio results for electron-phonon (e-ph) coupling and display the existence of a large variation in the coupling parameter as a function of electron and phonon dispersion. This variation is observed for all phonon modes in Si and Ge, and we show this for representative cases where the initial electron states are at the band gap edges. Using these e-ph matrix elements, which include all possible phonon modes and electron bands within a relevant energy range, we evaluate the imaginary part of the electron self-energy in order to obtain the associated scattering rates. The temperature dependence is seen through calculations of the scattering rates at 0 K and 300 K. The results provide a basis for understanding the impacts of phonon scattering vs. orientation and geometry in the design of devices, and in analysis of transport phenomena. This provides an additional tool for engineering the transfer of energy from carriers to the lattice

Acoustic modes of the phonon dispersion relation of NbD/sub x/ alloys

International Nuclear Information System (INIS)

Rowe, J.M.; Vagelatos, N.; Rush, J.J.; Flotow, H.E.

1975-01-01

The acoustic modes of the phonon dispersion relation in Nb, NbD 0 . 15 , and NbD 0 . 45 were measured at 473 0 K for phonons with wave vectors along the [100], [110], and [111] axes by coherent neutron scattering. The observed neutron groups for both alloys were well defined, with little or no apparent broadening. Results are compared to similar data for Nb--Mo alloys and with previous lattice-dynamics results for PdD 0 . 63 . This comparison shows that despite differences in detail, the general features of the dispersion relations of NbD/sub x/ and Nb--Mo are similar after allowing for the differences in lattice parameters for the two alloys. The measured dispersion curves and derived phonon frequency distributions for the Nb--D alloys are quite different from the analogous results for PdD 0 . 63 in that the average acoustic phonon frequencies increase with increasing deuterium concentration and lattice parameter

Synthesis, structural, electronic and linear electro-optical features of new quaternary Ag{sub 2}Ga{sub 2}SiS{sub 6} compound

Energy Technology Data Exchange (ETDEWEB)

Piasecki, M., E-mail: m.piasecki@ajd.czest.pl [Institute of Physics, Jan Dlugosz University, Armii Krajowej 13/15, PL-42-201 Czestochowa (Poland); Myronchuk, G.L. [Department of Solid State Physics, Lesya Ukrainka Eastern European National University, 13 Voli Ave., Lutsk 43025 (Ukraine); Parasyuk, O.V. [Department of Inorganic and Physical Chemistry, Lesya Ukrainka Eastern European National University, 13 Voli Ave., Lutsk 43025 (Ukraine); Khyzhun, O.Y. [Frantsevych Institute for Problems of Materials Science, National Academy of Sciences of Ukraine, 3 Krzhyzhanivsky St., Kyiv 03142 (Ukraine); Fedorchuk, A.O. [Department of Inorganic and Organic Chemistry, Lviv National University of Veterinary Medicine and Biotechnologies, 50 Pekarska Street, Lviv 79010 (Ukraine); Pavlyuk, V.V. [Department of Inorganic Chemistry, Ivan Franko National University of Lviv, 6 Kyryla and Mefodiya St., 79005 Lviv (Ukraine); Institute of Chemistry, Environment Protection and Biotechnology, Jan Dlugosz University, al. Armii Krajowej 13/15, 42-200 Czestochowa (Poland); Kozer, V.R.; Sachanyuk, V.P. [Department of Inorganic and Physical Chemistry, Lesya Ukrainka Eastern European National University, 13 Voli Ave., Lutsk 43025 (Ukraine); El-Naggar, A.M. [Physics Department, Faculty of Science, Ain Shams University, Abassia, Cairo 11566 (Egypt); Research Chair of Exploitation of Renewable Energy Applications in Saudi Arabia, Physics & Astronomy Department, College of Science, King Saud University, P.O. Box 2455, Riyadh 11451 (Saudi Arabia); Albassam, A.A. [Research Chair of Exploitation of Renewable Energy Applications in Saudi Arabia, Physics & Astronomy Department, College of Science, King Saud University, P.O. Box 2455, Riyadh 11451 (Saudi Arabia); Jedryka, J.; Kityk, I.V. [Faculty of Electrical Engineering, Czestochowa University Technology, Armii Krajowej 17, Czestochowa (Poland)

2017-02-15

For the first time phase equilibria and phase diagram of the AgGaS{sub 2}–SiS{sub 2} system were successfully explored by differential thermal and X-ray phase analysis methods. Crystal structure of low-temperature (LT) modification of Ag{sub 2}Ga{sub 2}SiS{sub 6} (LРў- Ag{sub 2}Ga{sub 2}SiS{sub 6}) was studied by X-ray powder method and it belongs to tetragonal space group I-42d, with unit cell parameters a=5.7164(4) Å, c=9.8023(7) Å, V=320.32(7) Å{sup 3}. Additional details regarding the crystal structure exploration are available at the web page Fachinformationszentrum Karlsruhe. X-ray photoelectron core-level and valence-band spectra were measured for pristine LРў- Ag{sub 2}Ga{sub 2}SiS{sub 6} crystal surface. In addition, the X-ray photoelectron valence-band spectrum of LРў-Ag{sub 2}Ga{sub 2}SiS{sub 6} was matched on a common energy scale with the X-ray emission S Kβ{sub 1,3} and Ga Kβ{sub 2} bands, which give information on the energy distribution of the S 3p and Ga 4p states, respectively. The presented X-ray spectroscopy results indicate that the valence S p and Ga p atomic states contribute mainly to the upper and central parts of the valence band of LРў-Ag{sub 2}Ga{sub 2}SiS{sub 6}, respectively, with a less significant contribution also to other valence-band regions. Band gap energy was estimated by measuring the quantum energy in the spectral range of the fundamental absorption. We have found that energy gap Eg is equal to 2.35 eV at 300 K. LT-Ag{sub 2}Ga{sub 2}SiS{sub 6} is a photosensitive material and reveals two spectral maxima on the curve of spectral photoconductivity spectra at λ{sub max1} =590 nm and λ{sub max2} =860 nm. Additionally, linear electro-optical effect of LT-Ag{sub 2}Ga{sub 2}SiS{sub 6} for the wavelengths of a cw He-Ne laser at 1150 nm was explored. - Graphical abstract: Manuscript present the technology of growth and investigation of properties a new quaternary compound Ag{sub 2}Ga{sub 2}SiS{sub 6

First-principles energy band calculation of Ruddlesden–Popper compound Sr{sub 3}Sn{sub 2}O{sub 7} using modified Becke–Johnson exchange potential

Energy Technology Data Exchange (ETDEWEB)

Kamimura, Sunao, E-mail: kamimura-sunao@che.kyutech.ac.jp [Department of Applied Chemistry, Faculty of Engineering, Kyushu Institute of Technology, 1-1 Sensuicho, Tobata, Kitakyushu, Fukuoka 804-8550 (Japan); National Institute of Advanced Industrial Science and Technology (AIST), 807-1 Shuku-machi, Tosu, Saga 841-0052 (Japan); Department of Molecular and Material Sciences, Interdisciplinary Graduate School of Engineering Science, Kyushu University, 6-1 Kasuga Kouen, Kasuga, Fukuoka 816-8580 Japan (Japan); Obukuro, Yuki [Interdisciplinary Graduate School of Agriculture and Engineering, University of Miyazaki, 1-1 Gakuenkibanadai-nishi, Miyazaki 889-2192 (Japan); Matsushima, Shigenori, E-mail: smatsu@kct.ac.jp [Department of Creative Engineering, National Institute of Technology, Kitakyushu College, 5-20-1 Shii, Kokuraminami-ku, Kitakyushu, Fukuoka 802-0985 (Japan); Nakamura, Hiroyuki [Department of Creative Engineering, National Institute of Technology, Kitakyushu College, 5-20-1 Shii, Kokuraminami-ku, Kitakyushu, Fukuoka 802-0985 (Japan); Arai, Masao [Computational Materials Science Unit (CMSU), National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba 305-0044 (Japan); Xu, Chao-Nan, E-mail: cn-xu@aist.go.jp [National Institute of Advanced Industrial Science and Technology (AIST), 807-1 Shuku-machi, Tosu, Saga 841-0052 (Japan); Department of Molecular and Material Sciences, Interdisciplinary Graduate School of Engineering Science, Kyushu University, 6-1 Kasuga Kouen, Kasuga, Fukuoka 816-8580 Japan (Japan); International Institute for Carbon Neutral Energy Research (WPI-I2CNER), Kyushu University, 744 Motooka, Nishi-ku, Fukuoka 819-0395 (Japan)

2015-12-15

The electronic structure of Sr{sub 3}Sn{sub 2}O{sub 7} is evaluated by the scalar-relativistic full potential linearized augmented plane wave (FLAPW+lo) method using the modified Becke–Johnson potential (Tran–Blaha potential) combined with the local density approximation correlation (MBJ–LDA). The fundamental gap between the valence band (VB) and conduction band (CB) is estimated to be 3.96 eV, which is close to the experimental value. Sn 5s states and Sr 4d states are predominant in the lower and upper CB, respectively. On the other hand, the lower VB is mainly composed of Sn 5s, 5p, and O 2p states, while the upper VB mainly consists of O 2p states. These features of the DOS are well reflected by the optical transition between the upper VB and lower CB, as seen in the energy dependence of the dielectric function. Furthermore, the absorption coefficient estimated from the MBJ–LDA is similar to the experimental result. - Graphical abstract: Calculated energy band structure along the symmetry lines of the first BZ of Sr{sub 3}Sn{sub 2}O{sub 7} crystal obtained using the MBJ potential. - Highlights: • Electronic structure of Sr{sub 3}Sn{sub 2}O{sub 7} is calculated on the basis of MBJ–LDA method for the first time. • Band gap of Sr{sub 3}Sn{sub 2}O{sub 7} is determined accurately on the basis of MBJ–LDA method. • The experimental absorption spectrum of Sr{sub 3}Sn{sub 2}O{sub 7} produced by MBJ–LDA is more accurate than that obtained by GGA method.

Investigation of the optical properties of MoS{sub 2} thin films using spectroscopic ellipsometry

Energy Technology Data Exchange (ETDEWEB)

Yim, Chanyoung; O' Brien, Maria; Winters, Sinéad [School of Chemistry, Trinity College Dublin, Dublin 2 (Ireland); Centre for Research on Adaptive Nanostructures and Nanodevices (CRANN), Trinity College Dublin, Dublin 2 (Ireland); McEvoy, Niall [Centre for Research on Adaptive Nanostructures and Nanodevices (CRANN), Trinity College Dublin, Dublin 2 (Ireland); Mirza, Inam; Lunney, James G. [Centre for Research on Adaptive Nanostructures and Nanodevices (CRANN), Trinity College Dublin, Dublin 2 (Ireland); School of Physics, Trinity College Dublin, Dublin 2 (Ireland); Duesberg, Georg S., E-mail: duesberg@tcd.ie [School of Chemistry, Trinity College Dublin, Dublin 2 (Ireland); Centre for Research on Adaptive Nanostructures and Nanodevices (CRANN), Trinity College Dublin, Dublin 2 (Ireland); Advanced Materials and BioEngineering Research (AMBER) Centre, Trinity College Dublin, Dublin 2 (Ireland)

2014-03-10

Spectroscopic ellipsometry (SE) characterization of layered transition metal dichalcogenide (TMD) thin films grown by vapor phase sulfurization is reported. By developing an optical dispersion model, the extinction coefficient and refractive index, as well as the thickness of molybdenum disulfide (MoS{sub 2}) films, were extracted. In addition, the optical band gap was obtained from SE and showed a clear dependence on the MoS{sub 2} film thickness, with thinner films having a larger band gap energy. These results are consistent with theory and observations made on MoS{sub 2} flakes prepared by exfoliation, showing the viability of vapor phase derived TMDs for optical applications.

Geometrical and band-structure effects on phonon-limited hole mobility in rectangular cross-sectional germanium nanowires

International Nuclear Information System (INIS)

Tanaka, H.; Mori, S.; Morioka, N.; Suda, J.; Kimoto, T.

2014-01-01

We calculated the phonon-limited hole mobility in rectangular cross-sectional [001], [110], [111], and [112]-oriented germanium nanowires, and the hole transport characteristics were investigated. A tight-binding approximation was used for holes, and phonons were described by a valence force field model. Then, scattering probability of holes by phonons was calculated taking account of hole-phonon interaction atomistically, and the linearized Boltzmann's transport equation was solved to calculate the hole mobility at low longitudinal field. The dependence of the hole mobility on nanowire geometry was analyzed in terms of the valence band structure of germanium nanowires, and it was found that the dependence was qualitatively reproduced by considering an average effective mass and the density of states of holes. The calculation revealed that [110] germanium nanowires with large height along the [001] direction show high hole mobility. Germanium nanowires with this geometry are also expected to exhibit high electron mobility in our previous work, and thus they are promising for complementary metal-oxide-semiconductor (CMOS) applications

Effect of annealing on structural and optical properties of Cu{sub 2}ZnSnS{sub 4} thin films grown by pulsed laser deposition

Energy Technology Data Exchange (ETDEWEB)

Surgina, G.D., E-mail: silvereye@bk.ru [National Research Nuclear University “Moscow Engineering Physics Institute”, Moscow 115409 (Russian Federation); Moscow Institute of Physics and Technology, Dolgoprudny, Moscow region 141700 (Russian Federation); Nevolin, V.N. [National Research Nuclear University “Moscow Engineering Physics Institute”, Moscow 115409 (Russian Federation); P.N. Lebedev Physical Institute of the Russian Academy of Sciences, Moscow 119991 (Russian Federation); Sipaylo, I.P.; Teterin, P.E. [National Research Nuclear University “Moscow Engineering Physics Institute”, Moscow 115409 (Russian Federation); Medvedeva, S.S. [Immanuel Kant Baltic Federal University, Kaliningrad 236041 (Russian Federation); Lebedinsky, Yu.Yu.; Zenkevich, A.V. [National Research Nuclear University “Moscow Engineering Physics Institute”, Moscow 115409 (Russian Federation); Moscow Institute of Physics and Technology, Dolgoprudny, Moscow region 141700 (Russian Federation)

2015-11-02

In this work, we compare the effect of different types of thermal annealing on the morphological, structural and optical properties of Cu{sub 2}ZnSnS{sub 4} (CZTS) thin films grown by reactive Pulsed Laser Deposition in H{sub 2}S flow. Rutherford backscattering spectrometry, atomic force microscopy, X-ray diffraction, Raman spectroscopy and optical spectrophotometry data reveal dramatic increase of the band gap and the crystallite size without the formation of secondary phases upon annealing in N{sub 2} at the optimized conditions. - Highlights: • Cu{sub 2}ZnSnS{sub 4} (CZTS) thin films were grown at room temperature. • Reactive Pulsed Laser Deposition in H{sub 2}S flow was used as a growth method. • Effect of annealing conditions on CZTS structural and optical properties is revealed. • Both the grain size and the band gap of CZTS film increase following the annealing. • Annealing in N{sub 2} effectively inhibits the formation of Sn{sub x}S secondary phases.

Electronic structure, Fermi surface topology and spectroscopic optical properties of LaBaCo{sub 2}O{sub 5.5} compound

Energy Technology Data Exchange (ETDEWEB)

Reshak, A.H. [New Technologies – Research Center, University of West Bohemia, Univerzitni 8, Pilsen 306 14 (Czech Republic); Center of Excellence Geopolymer and Green Technology, School of Material Engineering, University Malaysia Perlis, 01007 Kangar, Perlis (Malaysia); Al-Douri, Y. [Institute of Nano Electronic Engineering, University Malaysia Perlis, 01000 Kangar, Perlis (Malaysia); Khenata, R. [Laboratoire de Physique Quantique et de Modélisation Mathématique (LPQ3M), Département de Technologie, Université de Mascara, Mascara 29000 (Algeria); Khan, Wilayat; Khan, Saleem Ayaz [New Technologies – Research Center, University of West Bohemia, Univerzitni 8, Pilsen 306 14 (Czech Republic); Azam, Sikander, E-mail: sikander.physicst@gmail.com [New Technologies – Research Center, University of West Bohemia, Univerzitni 8, Pilsen 306 14 (Czech Republic)

2014-08-01

We have investigated the electronic band structure, Fermi surface topology, chemical bonding and optical properties of LaBaCo{sub 2}O{sub 5.5} compound. The first-principle calculations based on density functional theory (DFT) by means of the full-potential linearized augmented plane-wave method were employed. The atomic positions of LaBaCo{sub 2}O{sub 5.5} compound were optimized by minimizing the forces acting on atoms. We employed the local density approximation (LDA), generalized gradient approximation (GGA) and Engel–Vosko GGA (EVGGA) to treat the exchange correlation potential by solving Kohn–Sham equations. Electronic structure and bonding properties are studied throughout the calculation of densities of states, Fermi surfaces and charge densities. Furthermore, the optical properties are investigated via the calculation of the dielectric tensor component in order to characterize the linear optical properties. Optical spectra are analyzed by means of the electronic structure, which provides theoretical understanding of the conduction mechanism of the investigated compound. - Highlights: • DFT-FPLAPW method used for calculating the properties of LaBaCo{sub 2}O{sub 5.5} compound. • This study shows that nature of the compound is metallic. • Crystallographic plane which shows covalent character of O–Co bond. • The optical properties were also calculated and analyzed. • The Fermi surface of LaBaCo{sub 2}O{sub 5.5} is composed of five bands crossing along Γ–Z direction.

An experimental and theoretical investigation of phonons and lattice instabilities in metastable decompressed SrGeO sub 3 perovskite

CERN Document Server

Grzechnik, A; Wolf, G H; McMillan, P F

1998-01-01

We report detailed Raman and IR spectroscopic measurements for the decompressed high-pressure perovskite phase of SrGeO sub 3. The appearance of a first-order Raman spectrum and slight splittings in the infrared bands suggest that the symmetry of the recovered metastable perovskite phase is lowered from Pm3m. This interpretation is fully supported by first-principles LDA calculations using the LAPW method, which indicate a small tetragonal distortion. The static lattice energy is lowered by 3.3 meV (per formula unit) by allowing rotational relaxation of the GeO sub 6 octahedra. The calculations permit a reliable assignment of the zone centre phonon modes of SrGeO sub 3 perovskite. The calculated pressure dependence of the ferroic IR-active modes is in excellent agreement with our measured data and reveals an incipient soft-mode behaviour in the tension regime. Further calculations of the GeO sub 6 unit as a function of octahedral volume reveal instabilities to local off-centre Ge sup 4 sup + displacements as ...

Raman scattering by the E{sub 2h} and A{sub 1}(LO) phonons of In{sub x}Ga{sub 1-x}N epilayers (0.25 < x < 0.75) grown by molecular beam epitaxy

Energy Technology Data Exchange (ETDEWEB)

Oliva, R.; Ibanez, J.; Cusco, R.; Artus, L. [Institut Jaume Almera, Consell Superior d' Investigacions Cientifiques (CSIC), Lluis Sole i Sabaris s.n, 08028 Barcelona, Catalonia (Spain); Kudrawiec, R. [Institute of Physics, Wroclaw University of Technology, Wybrzeze Wyspianskiego 27, 50-370 Wroclaw (Poland); Serafinczuk, J. [Faculty of Microsystem Electronics and Photonics, Wroclaw University of Technology, Janiszewskiego 11/17, 50-372 Wroclaw (Poland); Martinez, O.; Jimenez, J. [Departamento de Fisica de la Materia Condensada, Cristalografia, y Mineralogia, Universidad de Valladolid, 47011 Valladolid (Spain); Henini, M. [Nottingham Nanotechnology and Nanoscience Centre, University of Nottingham, Nottingham NG7 2RD (United Kingdom); Boney, C.; Bensaoula, A. [Department of Physics, University of Houston, 4800 Calhoun, Houston, Texas 77004 (United States)

2012-03-15

We use Raman scattering to investigate the composition behavior of the E{sub 2h} and A{sub 1}(LO) phonons of In{sub x}Ga{sub 1-x}N and to evaluate the role of lateral compositional fluctuations and in-depth strain/composition gradients on the frequency of the A{sub 1}(LO) bands. For this purpose, we have performed visible and ultraviolet Raman measurements on a set of high-quality epilayers grown by molecular beam epitaxy with In contents over a wide composition range (0.25 < x < 0.75). While the as-measured A{sub 1}(LO) frequency values strongly deviate from the linear dispersion predicted by the modified random-element isodisplacement (MREI) model, we show that the strain-corrected A{sub 1}(LO) frequencies are qualitatively in good agreement with the expected linear dependence. In contrast, we find that the strain-corrected E{sub 2h} frequencies exhibit a bowing in relation to the linear behavior predicted by the MREI model. Such bowing should be taken into account to evaluate the composition or the strain state of InGaN material from the E{sub 2h} peak frequencies. We show that in-depth strain/composition gradients and selective resonance excitation effects have a strong impact on the frequency of the A{sub 1}(LO) mode, making very difficult the use of this mode to evaluate the strain state or the composition of InGaN material.

Electronic and optical properties of Y-doped Si{sub 3}N{sub 4} by density functional theory

Energy Technology Data Exchange (ETDEWEB)

Huang, Zhifeng [State Key Lab of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070 (China); Chen, Fei, E-mail: chenfei027@gmail.com [State Key Lab of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070 (China); Key Laboratory of Advanced Technology for Specially Functional Materials, Ministry of Education, Wuhan University of Technology, Wuhan 430070 (China); Su, Rui; Wang, Zhihao; Li, Junyang; Shen, Qiang [State Key Lab of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070 (China); Zhang, Lianmeng [State Key Lab of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070 (China); Key Laboratory of Advanced Technology for Specially Functional Materials, Ministry of Education, Wuhan University of Technology, Wuhan 430070 (China)

2015-07-15

Highlights: • Y-doped α-Si{sub 3}N{sub 4} and β-Si{sub 3}N{sub 4} are systematically investigated by DFT. • Impacts of local structure and bond character on electronic property are studied. • Static dielectric constants and optical absorption properties are investigated. - Abstract: Geometry structures, formation energies, electronic and optical properties of Y-doped α-Si{sub 3}N{sub 4} and β-Si{sub 3}N{sub 4} are investigated based on the density functional theory (DFT). The low values of formation energies indicate both Y-doped Si{sub 3}N{sub 4} models can be easily synthesized. Besides, the negative formation energies of α-Y{sub i}-Si{sub 3}N{sub 4} demonstrate that interstitial Y-doped α-Si{sub 3}N{sub 4} has an excellent stability. The energies of impurity levels are different resulting from the different chemical environment around Y atoms. The impurity levels localized in the band gap reduces the maximum energy gaps, which enhances the optical properties of Si{sub 3}N{sub 4}. The static dielectric constants become larger and the optical absorption spectra show the red-shift phenomena for all Y-doped Si{sub 3}N{sub 4} models.

Thermoluminescence and optically stimulated luminescence properties of Dy{sup 3+}-doped CaO–Al{sub 2}O{sub 3}–B{sub 2}O{sub 3}-based glasses

Energy Technology Data Exchange (ETDEWEB)

Yahaba, T., E-mail: takuma.yahaba.s1@dc.tohoku.ac.jp [Department of Applied Chemistry, Graduate School of Engineering, Tohoku University, 6-6-07 Aramaki Aza Aoba, Aoba-ku, Sendai 980-8579 (Japan); Fujimoto, Y. [Department of Applied Chemistry, Graduate School of Engineering, Tohoku University, 6-6-07 Aramaki Aza Aoba, Aoba-ku, Sendai 980-8579 (Japan); Yanagida, T. [Nara Institute of Science and Technology (NAIST), 8916-5 Takayama, Ikoma 630-0192 (Japan); Koshimizu, M.; Tanaka, H.; Saeki, K.; Asai, K. [Department of Applied Chemistry, Graduate School of Engineering, Tohoku University, 6-6-07 Aramaki Aza Aoba, Aoba-ku, Sendai 980-8579 (Japan)

2017-02-01

We developed Dy{sup 3+}-doped CaO–Al{sub 2}O{sub 3}–B{sub 2}O{sub 3} based glasses with Dy concentrations of 0.5, 1.0, and 2.0 mol% using a melt-quenching technique. The as-synthesized glasses were applicable as materials exhibiting thermoluminescence (TL) and optically stimulated luminescence (OSL). The optical and radiation response properties of the glasses were characterized. In the photoluminescence (PL) spectra, two emission bands due to the {sup 4}F{sub 9/2} → {sup 6}H{sub 15/2} and {sup 4}F{sub 9/2} → {sup 6}H{sub 13/2} transitions of Dy{sup 3+} were observed at 480 and 580 nm. In the OSL spectra, the emission band due to the {sup 4}F{sub 9/2} → {sup 6}H{sub 15/2} transition of Dy{sup 3+} was observed. Excellent TL and OSL responses were observed for dose ranges of 0.1–90 Gy. In addition, TL fading behavior was better than that of OSL in term of the long-time storage. These results indicate that the Dy{sup 3+}-doped CaO–Al{sub 2}O{sub 3}–B{sub 2}O{sub 3}-based glasses are applicable as TL materials.

Kinks in the σ band of graphene induced by electron-phonon coupling.

Science.gov (United States)

Mazzola, Federico; Wells, Justin W; Yakimova, Rositza; Ulstrup, Søren; Miwa, Jill A; Balog, Richard; Bianchi, Marco; Leandersson, Mats; Adell, Johan; Hofmann, Philip; Balasubramanian, T

2013-11-22

Angle-resolved photoemission spectroscopy reveals pronounced kinks in the dispersion of the σ band of graphene. Such kinks are usually caused by the combination of a strong electron-boson interaction and the cutoff in the Fermi-Dirac distribution. They are therefore not expected for the σ band of graphene that has a binding energy of more than ≈3.5 eV. We argue that the observed kinks are indeed caused by the electron-phonon interaction, but the role of the Fermi-Dirac distribution cutoff is assumed by a cutoff in the density of σ states. The existence of the effect suggests a very weak coupling of holes in the σ band not only to the π electrons of graphene but also to the substrate electronic states. This is confirmed by the presence of such kinks for graphene on several different substrates that all show a strong coupling constant of λ≈1.

The effects of optical phonon on the binding energy of bound polaron in a wurtzite ZnO/MgxZn1−xO quantum well

International Nuclear Information System (INIS)

Zhao, Feng-Qi; Guo, Zi-Zheng; Zhu, Jun

2014-01-01

An improved Lee-Low-Pines intermediate coupling method is used to study the energies and binding energies of bound polarons in a wurtzite ZnO/Mg x Zn 1−x O quantum well. The contributions from different branches of long-wave optical phonons, i.e., confined optical phonons, interface optical phonons, and half-space optical phonons are considered. In addition to electron-phonon interaction, the impurity-phonon interaction, and the anisotropy of material parameters, such as phonon frequency, electron effective mass, and dielectric constant, are also included in our computation. Ground-state energies, binding energies and detailed phonon contributions from various phonons as functions of well width, impurity position and composition are presented. Our result suggests that total phonon contribution to ground state and binding energies in the studied wurtzite ZnO/Mg 0.3 Zn 0.7 O quantum wells varies between 28–23 meV and 62–45 meV, respectively, which are much larger than the corresponding values (about 3.2–1.8 meV and 1.6–0.3 meV) in GaAs/Al 0.3 Ga 0.7 As quantum wells. For a narrower quantum well, the phonon contribution mainly comes from interface and half-space phonons, for a wider quantum well, most of phonon contribution originates from confined phonons. The contribution from all the phonon modes to binding energies increases slowly either when impurity moves far away from the well center in the z direction or with the increase in magnesium composition (x). It is found that different phonons have different influences on the binding energies of bound polarons. Furthermore, the phonon contributions to binding energies as functions of well width, impurity position, and composition are very different from one another. In general, the electron-optical phonon interaction and the impurity center-optical phonon interaction play an important role in electronic states of ZnO-based quantum wells and cannot be neglected.

Blue shift in optical absorption, magnetism and light-induced superparamagnetism in γ-Fe{sub 2}O{sub 3} nanoparticles formed in dendrimer

Energy Technology Data Exchange (ETDEWEB)

Domracheva, Natalia E., E-mail: ndomracheva@gmail.com; Vorobeva, Valerya E. [Zavoisky Kazan Physical-Technical Institute (Russian Federation); Gruzdev, Matvey S. [Institute of Solution Chemistry (Russian Federation); Pyataev, Andrew V. [Kazan Federal University (Russian Federation)

2015-02-15

We are presenting the investigation of the optical, magnetic, and photoinduced superparamagnetic properties of single-domain γ-Fe{sub 2}O{sub 3} nanoparticles (NPs) with diameters of about 2.5 nm formed in second-generation poly(propylene imine) dendrimer. The optical absorption studies indicated direct allowed transition with the band gap (4.5 eV), which is blue shift with respect to the value of the bulk material. Low-temperature blocking of the NPs magnetic moments at 18 K is determined by SQUID measurements. The influence of pulsed laser irradiation on the superparamagnetic properties of γ-Fe{sub 2}O{sub 3} NPs was studied by EPR spectroscopy. It has been shown that irradiation of the sample held in vacuo and cooled in zero magnetic field to 6.9 K leads to the appearance of a new EPR signal, which decays immediately after the irradiation is stopped. The appearance and disappearance of this new signal can be repeated many times at 6.9 K when we turn on/turn off the laser. We suppose that the generation of conduction band electrons by irradiation into the band gap of the γ-Fe{sub 2}O{sub 3} changes the superparamagnetic properties of NPs. Graphical Abstract: Features of the behavior of single-domain γ-Fe{sub 2}O{sub 3} nanoparticles formed in dendrimer were found by UV-Vis and EPR spectroscopy: “blue” shift in optical absorption, a significant increase in the band gap width and variation of superparamagnetic properties under light irradiation.

Extended two-temperature model for ultrafast thermal response of band gap materials upon impulsive optical excitation

Energy Technology Data Exchange (ETDEWEB)

Shin, Taeho [Department of Chemistry, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139-4307 (United States); Samsung Advanced Institute of Technology, Suwon 443-803 (Korea, Republic of); Teitelbaum, Samuel W.; Wolfson, Johanna; Nelson, Keith A., E-mail: kanelson@mit.edu [Department of Chemistry, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139-4307 (United States); Kandyla, Maria [Department of Chemistry, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139-4307 (United States); Theoretical and Physical Chemistry Institute, National Hellenic Research Foundation, Athens 116-35 (Greece)

2015-11-21

Thermal modeling and numerical simulations have been performed to describe the ultrafast thermal response of band gap materials upon optical excitation. A model was established by extending the conventional two-temperature model that is adequate for metals, but not for semiconductors. It considers the time- and space-dependent density of electrons photoexcited to the conduction band and accordingly allows a more accurate description of the transient thermal equilibration between the hot electrons and lattice. Ultrafast thermal behaviors of bismuth, as a model system, were demonstrated using the extended two-temperature model with a view to elucidating the thermal effects of excitation laser pulse fluence, electron diffusivity, electron-hole recombination kinetics, and electron-phonon interactions, focusing on high-density excitation.

Effect of oxygen incorporation on the vibrational properties of Al{sub 0.2}Ga{sub 0.3}In{sub 0.5}P:Be films

Energy Technology Data Exchange (ETDEWEB)

Soubervielle-Montalvo, C., E-mail: csober22@gmail.com [Area de Computacion e Informatica, Facultad de Ingenieria, Universidad Autonoma de San Luis Potosi, Av. Dr. Manuel Nava 8, Zona Universitaria, C.P. 78290, San Luis Potosi, S.L.P (Mexico); Vital-Ochoa, O. [Area de Computacion e Informatica, Facultad de Ingenieria, Universidad Autonoma de San Luis Potosi, Av. Dr. Manuel Nava 8, Zona Universitaria, C.P. 78290, San Luis Potosi, S.L.P (Mexico); Anda, F. de [Instituto de Investigacion en Comunicacion Optica, Universidad Autonoma de San Luis Potosi, Av. Karakorum 1470, Lomas 4a Secc., C.P. 78210, San Luis Potosi, S.L.P. (Mexico); Vazquez-Cortes, D.; Rodriguez, A.G. [Coordinacion para la Innovacion y Aplicacion de la Ciencia y Tecnologia, Universidad Autonoma de San Luis Potosi, Av. Karakorum 1470, Lomas 4a Secc., C.P. 78210, San Luis Potosi, S.L.P. (Mexico); Melendez-Lira, M. [Physics Department, Centro de Investigacion y de Estudios Avanzados del IPN, Av. Instituto Politecnico Nacional 2508, San Pedro Zacatenco, C.P. 07360, Mexico, D.F. (Mexico); Mendez-Garcia, V.H. [Coordinacion para la Innovacion y Aplicacion de la Ciencia y Tecnologia, Universidad Autonoma de San Luis Potosi, Av. Karakorum 1470, Lomas 4a Secc., C.P. 78210, San Luis Potosi, S.L.P. (Mexico)

2011-10-31

The vibrational properties of Al{sub 0.2}Ga{sub 0.3}In{sub 0.5}P:Be films grown on (100) GaAs substrates by solid source molecular beam epitaxy varying the phosphorous cracking-zone temperature (PCT) were studied by Raman spectroscopy. The Raman-intensity ratio between the allowed longitudinal optical and the forbidden transverse optical (TO) phonons, and the full width at half maximum of their Lorentzian fits were used to characterize the crystalline quality of the films. The Raman spectra from the samples show changes in the shape and intensity of phonon resonances depending on the PCT variation, indicating that the disorder in the lattice increases with PCT. The increasing disorder is related to the inclusion of oxygen, which act as a non-intentional perturbing impurity in the lattice. In addition, a vibrational mode located at 598 cm{sup -1} related to a forbidden InP-like TO phonon resonance was correlated with oxygen-induced disorder. Photoluminescence at room temperature shows that the high inclusion of oxygen also deteriorates the optical properties of the samples, by introducing non-radiative recombination centers.

Controllable photon and phonon localization in optomechanical Lieb lattices.

Science.gov (United States)

Wan, Liang-Liang; Lü, Xin-You; Gao, Jin-Hua; Wu, Ying

2017-07-24

The Lieb lattice featuring flat band is not only important in strongly-correlated many-body physics, but also can be utilized to inspire new quantum devices. Here we propose an optomechanical Lieb lattice, where the flat-band physics of photon-phonon polaritons is demonstrated. The tunability of the band structure of the optomechanical arrays allows one to obtain an approximate photon or phonon flat band as well as the transition between them. This ultimately leads to the result that the controllable photon or phonon localization could be realized by the path interference effects. This study offers an alternative approach to explore the exotic photon and phonon many-body effects, which has potential applications in the future hybrid-photon-phonon quantum network and engineering new type solid-state quantum devices.

Structure and optical properties of [In{sub 1−2x}Sn{sub x}Zn{sub x}]GaO{sub 3}(ZnO){sub m}

Energy Technology Data Exchange (ETDEWEB)

Eichhorn, Simon; Mader, Werner, E-mail: mader@uni-bonn.de

2016-01-15

Compounds of [In{sub 1−2x}Sn{sub x}Zn{sub x}]GaO{sub 3}(ZnO){sub 1} (x≤0.22) and [In{sub 1−2x}Sn{sub x}Zn{sub x}]GaO{sub 3}(ZnO){sub 2} (x≤0.42) were prepared by solid state processing proving a substantial solid solution of Sn in the layered compounds InGaO{sub 3}(ZnO){sub m} (m=1, 2). Single crystal X-ray diffraction of the compounds reveals two In{sup 3+} ions to be substituted by one Sn{sup 4+} and one Zn{sup 2+} at the octahedral layer preserving the average charge of +3 at these sites. The substitution does not lead to an ordering of the ions but proves for the first time that the octahedral site can be occupied by different ions while all characteristics of the layered structures remain unchanged. Consequences of indium substitution are (i) decrease of the a axis compared to InGaO{sub 3}(ZnO){sub m} according to smaller ionic radii of Sn{sup 4+} and Zn{sup 2+} compared to In{sup 3+} and (ii) shift of the optical band gap to higher energies shown by UV–vis measurements. - Graphical abstract: Substitution limits of indium in InGaO{sub 3}(ZnO){sub m} (IGZO) by Sn and Zn are studied for m=1, 2 by single crystal X-ray diffraction and micro-chemical analysis. - Highlights: • New Oxides [In{sub 1−2x}Sn{sub x}Zn{sub x}]GaO{sub 3}(ZnO){sub m} (m=1, 2) with IGZO type structure. • Sn and Zn substitute for In at octahedral sites. • Crystal structures were characterized by single crystal X-ray diffraction. • Optical band gap energies were determined by UV–vis spectroscopy.

Simulation of Terahertz Frequency Sources. Polar-Optical Phonon Enhancement of Harmonic Generation in Schottky Diodes

National Research Council Canada - National Science Library

Gelmont, Boris

2002-01-01

... polar optical vibration frequency When a high frequency input signal is applied to a frequency multiplier device polar-optical phonons can enhance the non-linearities inherent in this device, enabling...

Optical spectroscopy and band gap analysis of hybrid improper ferroelectric Ca{sub 3}Ti{sub 2}O{sub 7}

Energy Technology Data Exchange (ETDEWEB)

Cherian, Judy G.; Harms, Nathan C. [Department of Chemistry, University of Tennessee, Knoxville, Tennessee 37996 (United States); Birol, Turan; Vanderbilt, David [Department of Physics and Astronomy, Rutgers, The State University of New Jersey, Piscataway, New Jersey 08854 (United States); Gao, Bin; Cheong, Sang-Wook [Department of Physics and Astronomy, Rutgers, The State University of New Jersey, Piscataway, New Jersey 08854 (United States); Rutgers Center for Emergent Materials, Rutgers, The State University of New Jersey, Piscataway, New Jersey 08854 (United States); Musfeldt, Janice L., E-mail: musfeldt@utk.edu [Department of Chemistry, University of Tennessee, Knoxville, Tennessee 37996 (United States); Department of Physics, University of Tennessee, Knoxville, Tennessee 37996 (United States)

2016-06-27

We bring together optical absorption spectroscopy, photoconductivity, and first principles calculations to reveal the electronic structure of the room temperature ferroelectric Ca{sub 3}Ti{sub 2}O{sub 7}. The 3.94 eV direct gap in Ca{sub 3}Ti{sub 2}O{sub 7} is charge transfer in nature and noticeably higher than that in CaTiO{sub 3} (3.4 eV), a finding that we attribute to dimensional confinement in the n = 2 member of the Ruddlesden-Popper series. While Sr substitution introduces disorder and broadens the gap edge slightly, oxygen deficiency reduces the gap to 3.7 eV and gives rise to a broad tail that persists to much lower energies.

Structural, magnetic and optical properties of a dilute magnetic semiconductor based on Ce{sub 1−x}Co{sub x}O{sub 2} thin film grown on LaAlO{sub 3}

Energy Technology Data Exchange (ETDEWEB)

Mahmoud, Waleed E., E-mail: w_e_mahmoud@yahoo.com [King Abdulaziz University, Faculty of Science, Department of Physics, Jeddah (Saudi Arabia); Suez Canal University, Faculty of Science, Department of Physics, Ismailia (Egypt); Al-Ghamdi, A.A. [King Abdulaziz University, Faculty of Science, Department of Physics, Jeddah (Saudi Arabia); Al-Agel, F.A. [Hail University, College of Science, Department of Physics, Hail (Saudi Arabia); Al-Arfaj, E. [Umm Alqura University, Department of Physics, Makkah (Saudi Arabia); Qassim University, College of Science, Physics Department, Buraidah 5145 (Saudi Arabia); Shokr, F.S. [King Abdulaziz University, Faculty of Science & Arts, Department of Physics, Rabigh (Saudi Arabia); Al-Gahtany, S.A. [King Abdulaziz University, Faculty of Science for Girls, Department of Physics, Jeddah (Saudi Arabia); Alshahrie, Ahmed [King Abdulaziz University, Faculty of Science, Department of Physics, Jeddah (Saudi Arabia); Jalled, Ouissem [King Abdulaziz University, Faculty of Science, Department of Physics, Jeddah (Saudi Arabia); Laboratory of Applied Mineral Chemistry, Department of Chemistry, University Tunis ElManar, Faculty of Sciences, Campus 2092, Tunis (Tunisia); Bronstein, L.M. [King Abdulaziz University, Faculty of Science, Department of Physics, Jeddah (Saudi Arabia); Texas State University-San Marcos, Department of Chemistry and Biochemistry, 601 University Dr., San Marcos, TX 78666 (United States); Beall, Gary W. [King Abdulaziz University, Faculty of Science, Department of Physics, Jeddah (Saudi Arabia); Indiana University, Department of Chemistry, Bloomington, IN 47405 (United States)

2015-12-15

Highlights: • Co doped CeO{sub 2} was grown on LaAlO{sub 3} (0 0 1) via a modified sol–gel spin-coating technique. • The concentration of the Co ions was varied from 1 to 15 at.%. • The incorporation of 5 at.% of Mn ions was found to provide formation of exceptionally magnetic moment. • This amount demonstrated a giant magnetic moment of 1.09 μ{sub B}/Co. • This amount reduced the optical band gap and enhanced the optical performance. - Abstract: The enhancement of the room temperature ferromagnetism and optical properties of the dilute magnetic metal oxides is a crucial clue to construct spin-based optoelectronic devices. In this work, Ce{sub 1−x}Co{sub x}O{sub 2} (0.01 ≤ x ≤0.15) thin films were prepared via ethylene glycol modified sol–gel spin coating technique on the LaAlO{sub 3} (0 0 1) substrate to enhance their room temperature ferromagnetism and optical properties. The structures, magnetic and optical properties of the prepared films were characterized by X-ray diffraction, atomic force microscopy, scanning electron microscopy, energy dispersive X-ray spectroscopy, SQUID magnetometer, X-ray photoelectron spectroscopy and UV–vis spectrophotometer. The results demonstrated that a single phase cubic structure was formed, implying the substitution of Co ions into the Ce ions sites. The prepared films showed room temperature ferromagnetism with saturation magnetic moment of 1.09 μ{sub B}/Co was achieved for 5 at.% Co-doped CeO{sub 2}. This film exhibited high optical transparency of 85% and low optical band energy gap of 3.39 eV. The improved magnetic and optical properties are argued to the increase of the density of the oxygen vacancies into the cerium oxide crystal structure due to the incorporation of Co ions.

The hierarchically organized splitting of chromosome bands into sub-bands analyzed by multicolor banding (MCB).

Science.gov (United States)

Lehrer, H; Weise, A; Michel, S; Starke, H; Mrasek, K; Heller, A; Kuechler, A; Claussen, U; Liehr, T

2004-01-01

To clarify the nature of chromosome sub-bands in more detail, the multicolor banding (MCB) probe-set for chromosome 5 was hybridized to normal metaphase spreads of GTG band levels at approximately 850, approximately 550, approximately 400 and approximately 300. It could be observed that as the chromosomes became shorter, more of the initial 39 MCB pseudo-colors disappeared, ending with 18 MCB pseudo-colored bands at the approximately 300-band level. The hierarchically organized splitting of bands into sub-bands was analyzed by comparing the disappearance or appearance of pseudo-color bands of the four different band levels. The regions to split first are telomere-near, centromere-near and in 5q23-->q31, followed by 5p15, 5p14, and all GTG dark bands in 5q apart from 5q12 and 5q32 and finalized by sub-band building in 5p15.2, 5q21.2-->q21.3, 5q23.1 and 5q34. The direction of band splitting towards the centromere or the telomere could be assigned to each band separately. Pseudo-colors assigned to GTG-light bands were resistant to band splitting. These observations are in concordance with the recently proposed concept of chromosome region-specific protein swelling. Copyright 2003 S. Karger AG, Basel

Au{sup 3+} ion implantation on FTO coated glasses: Effect on structural, electrical, optical and phonon properties

Energy Technology Data Exchange (ETDEWEB)

Sahu, Bindu; Dey, Ranajit; Bajpai, P.K., E-mail: bajpai.pk1@gmail.com

2017-06-01

Highlights: • Effects of 11.00 MeV Au{sup 3+} ions implanted in FTO coated (thickness ≈300 nm) silicate glasses at varying fluence. • Metal clustering near the surface and subsurface region below glass-FTO interface changes electrical and optical properties significantly. • Ion implantation does not affect the crystalline structure of the coated films; however, the tetragonal distortion increases with increasing ion fluence. • Significant surface reconstruction takes place with ion beam fluence; The average roughness also decreases with increasing fluence. • The sheet resistivity increases with increasing fluence. • Raman analysis also corroborates the re-crystallization process inducing due to ion implantation. • Optical properties of the implanted surfaces changes significantly. - Abstract: Effects of 11.00 MeV Au{sup 3+} ions implanted in FTO coated (thickness ≈300 nm) silicate glasses on structural, electrical optical and phonon behavior have been explored. It has been observed that metal clustering near the surface and sub-surface region below glass-FTO interface changes electrical and optical properties significantly. Ion implantation does not affect the crystalline structure of the coated films; however, the unit cell volume decreases with increase in fluence and the tetragonal distortion (c/a ratio) also decreases systematically in the implanted samples. The sheet resistivity of the films increases from 11 × 10{sup −5} ohm-cm (in pristine) to 7.5 × 10{sup −4} ohm-cm for highest ion beam fluence ≈10{sup 15} ions/cm{sup 2}. The optical absorption decreases with increasing fluence whereas, the optical transmittance as well as reflectance increases with increasing fluence. The Raman spectra are observed at ∼530 cm{sup −1} and ∼1103 cm{sup −1} in pristine sample. The broad band at 530 cm{sup −1} shifts towards higher wave number in the irradiated samples. This may be correlated with increased disorder and strain relaxation in

Intermediate Ce{sup 3+} defect level induced photoluminescence and third-order nonlinear optical effects in TiO{sub 2}-CeO{sub 2} nanocomposites

Energy Technology Data Exchange (ETDEWEB)

Divya, S.; Nampoori, V.P.N.; Radhakrishnan, P.; Mujeeb, A. [Cochin University of Science and Technology, International School of Photonics, Cochin, Kerala (India)

2014-02-15

We report on the linear and nonlinear optical studies of TiO{sub 2}-CeO{sub 2} nanocomposites. It was found that the band gap of the nanocomposite can be tuned by varying Ce/Ti content. Nonlinear absorption characteristics of these samples were studied by employing open aperture Z-scan technique using an Nd:YAG laser (532 nm, 7 ns, 10 Hz). It has been observed that as the CeO{sub 2} amount increases, band gap of the nanocomposites decreases and the reason proposed for the change in band gap is the smudging of localised states of Ce{sup 3+} into the forbidden energy gap, thus acting as the intermediate state. Fluorescence studies confirmed the above argument. Nonlinear investigation revealed that with increase in the CeO{sub 2} amount, the two-photon absorption coefficient increased due to the modification of TiO{sub 2} dipole symmetry. Suitable candidature of the nanocomposites for the fabrication of nonlinear optical devices was proved by determining the optical limiting threshold. (orig.)

Elastic scattering by hot electrons and apparent lifetime of longitudinal optical phonons in gallium nitride

Energy Technology Data Exchange (ETDEWEB)

Khurgin, Jacob B., E-mail: jakek@jhu.edu [Department of Electrical and Computer Engineering, Johns Hopkins University, Baltimore, Maryland 21218 (United States); Bajaj, Sanyam; Rajan, Siddharth [Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210 (United States)

2015-12-28

Longitudinal optical (LO) phonons in GaN generated in the channel of high electron mobility transistors (HEMT) are shown to undergo nearly elastic scattering via collisions with hot electrons. The net result of these collisions is the diffusion of LO phonons in the Brillouin zone causing reduction of phonon and electron temperatures. This previously unexplored diffusion mechanism explicates how an increase in electron density causes reduction of the apparent lifetime of LO phonons, obtained from the time resolved Raman studies and microwave noise measurements, while the actual decay rate of the LO phonons remains unaffected by the carrier density. Therefore, the saturation velocity in GaN HEMT steadily declines with increased carrier density, in a qualitative agreement with experimental results.

The Electron-Phonon Interaction in Strongly Correlated Systems

International Nuclear Information System (INIS)

Castellani, C.; Grilli, M.

1995-01-01

We analyze the effect of strong electron-electron repulsion on the electron-phonon interaction from a Fermi-liquid point of view and show that the electron-electron interaction is responsible for vertex corrections, which generically lead to a strong suppression of the electron-phonon coupling in the v F q/ω >>1 region, while such effect is not present when v F q/ω F is the Fermi velocity and q and ω are the transferred momentum and frequency respectively. In particular the e-ph scattering is suppressed in transport properties which are dominated by low-energy-high-momentum processes. On the other hand, analyzing the stability criterion for the compressibility, which involves the effective interactions in the dynamical limit, we show that a sizable electron-phonon interaction can push the system towards a phase-separation instability. Finally a detailed analysis of these ideas is carried out using a slave-boson approach for the infinite-U three-band Hubbard model in the presence of a coupling between the local hole density and a dispersionless optical phonon. (author)

Structural analysis, optical and dielectric function of [Ba{sub 0.9}Ca{sub 0.1}](Ti{sub 0.9}Zr{sub 0.1})O{sub 3} nanocrystals

Energy Technology Data Exchange (ETDEWEB)

Herrera-Pérez, G., E-mail: guillermo.herrera@cimav.edu.mx, E-mail: damasio.morales@cimav.edu.mx [Centro de Investigación en Materiales Avanzados (CIMAV), S. C. Miguel de Cervantes 120, Chihuahua 31136, Chihuahua (Mexico); Physics of Materials Department, Centro de Investigación en Materiales Avanzados (CIMAV), S. C. Miguel de Cervantes 120, Chihuahua 31136, Chihuahua (Mexico); Morales, D., E-mail: guillermo.herrera@cimav.edu.mx, E-mail: damasio.morales@cimav.edu.mx; Paraguay-Delgado, F.; Reyes-Rojas, A.; Fuentes-Cobas, L. E. [Physics of Materials Department, Centro de Investigación en Materiales Avanzados (CIMAV), S. C. Miguel de Cervantes 120, Chihuahua 31136, Chihuahua (Mexico); Borja-Urby, R. [Centro de Nanociencias Micro y Nanotecnologías, Instituto Politécnico Nacional, 07300 México City (Mexico)

2016-09-07

This work presents the identification of inter-band transitions in the imaginary part of the dielectric function (ε{sub 2}) derived from the Kramers–Kronig analysis for [Ba{sub 0.9}Ca{sub 0.1}](Ti{sub 0.9}Zr{sub 0.1})O{sub 3} (BCZT) nanocrystals synthesized by the modified Pechini method. The analysis started with the chemical identification of the atoms that conform BCZT in the valence loss energy region of a high energy-resolution of electron energy loss spectroscopy. The indirect band energy (E{sub g}) was determined in the dielectric response function. This result is in agreement with the UV-Vis technique, and it obtained an optical band gap of 3.16 eV. The surface and volume plasmon peaks were observed at 13.1 eV and 26.2 eV, respectively. The X-ray diffraction pattern and the Rietveld refinement data of powders heat treated at 700 °C for 1 h suggest a tetragonal structure with a space group (P4 mm) with the average crystal size of 35 nm. The average particle size was determined by transmission electron microscopy.

Transformation of photoluminescence and Raman scattering spectra of Si-rich Al{sub 2}O{sub 3} films at thermal annealing

Energy Technology Data Exchange (ETDEWEB)

Vergara Hernandez, E. [UPIITA-Instituto Politecnico Nacional, Mexico DF 07320 (Mexico); Torchynska, T.V., E-mail: ttorch@esfm.ipn.mx [ESFM-Instituto Politecnico Nacional, Mexico DF 07320 (Mexico); Jedrzejewski, J.; Balberg, I. [Racah Institute of Physics, Hebrew University, 91904 Jerusalem (Israel)

2014-11-15

The effect of thermal annealing on optical properties of Al{sub 2}O{sub 3} films with the different Si contents was investigated using the photoluminescence and Raman scattering methods. Si-rich Al{sub 2}O{sub 3} films were prepared by RF magnetron co-sputtering of Si and Al{sub 2}O{sub 3} targets on long quartz glass substrates. Photoluminescence (PL) spectra of as grown Si-rich Al{sub 2}O{sub 3} films are characterized by four PL bands with the peak positions at 2.90, 2.70, 2.30 and 1.45 eV. The small intensity Raman peaks related to the scattering in the amorphous Si phase has been detected in as grown films as well. Thermal annealing at 1150 °C for 90 min stimulates the formation of Si nanocrystals (NCs) in the film area with the Si content exceeded 50%. The Raman peak related to the scattering on optic phonons in Si NCs has been detected for this area. After thermal annealing the PL intensity of all mentioned PL bands decreases in the film area with smaller Si content (≤50%) and increases in the film area with higher Si content (≥50%). Simultaneously the new PL band with the peak position at 1.65 eV appears in the film area with higher Si content (≥50%). The new PL band (1.65 eV) is attributed to the exciton recombination inside of small size Si NCs (2.5–2.7 nm). In bigger size Si NCs (3.5–5.0 nm) the PL band at 1.65 eV has been not detected due to the impact, apparently, of elastic strain appeared at the Si/Al{sub 2}O{sub 3} interface. Temperature dependences of PL spectra for the Si-rich Al{sub 2}O{sub 3} films have been studied in the range of 10–300 K with the aim to reveal the mechanism of recombination transitions for the mentioned above PL bands 2.90, 2.70, 2.30 and 1.45 eV in as grown films. The thermal activation of PL intensity and permanent PL peak positions in the temperature range 10–300 K permit to assign these PL bands to defect related emission in Al{sub 2}O{sub 3} matrix.

One-dimensional hypersonic phononic crystals.

Science.gov (United States)

Gomopoulos, N; Maschke, D; Koh, C Y; Thomas, E L; Tremel, W; Butt, H-J; Fytas, G

2010-03-10

We report experimental observation of a normal incidence phononic band gap in one-dimensional periodic (SiO(2)/poly(methyl methacrylate)) multilayer film at gigahertz frequencies using Brillouin spectroscopy. The band gap to midgap ratio of 0.30 occurs for elastic wave propagation along the periodicity direction, whereas for inplane propagation the system displays an effective medium behavior. The phononic properties are well captured by numerical simulations. The porosity in the silica layers presents a structural scaffold for the introduction of secondary active media for potential coupling between phonons and other excitations, such as photons and electrons.

Optical density of states in ultradilute GaAsN alloy: Coexistence of free excitons and impurity band of localized and delocalized states

Energy Technology Data Exchange (ETDEWEB)

Bhuyan, Sumi; Pal, Bipul; Bansal, Bhavtosh, E-mail: bhavtosh@iiserkol.ac.in [Indian Institute of Science Education and Research Kolkata, Mohanpur Campus, Nadia 741252, West Bengal (India); Das, Sanat K.; Dhar, Sunanda [Department of Electronic Science, University of Calcutta, 92 A.P.C. Road, Kolkata 700009 (India)

2014-07-14

Optically active states in liquid phase epitaxy-grown ultra-dilute GaAsN are studied. The feature-rich low temperature photoluminescence spectrum has contributions from excitonic band states of the GaAsN alloy, and two types of defect states—localized and extended. The degree of delocalization for extended states both within the conduction and defect bands, characterized by the electron temperature, is found to be similar. The degree of localization in the defect band is analyzed by the strength of the phonon replicas. Stronger emission from these localized states is attributed to their giant oscillator strength.

Effect of compositional dependence on physical and optical parameters of Te{sub 17}Se{sub 83−x}Bi{sub x} glassy system

Energy Technology Data Exchange (ETDEWEB)

Sharma, Pankaj, E-mail: pks_phy@yahoo.co.in [Department of Physics and Materials Science, Jaypee University of Information Technology, Waknaghat, Solan, HP 173234 (India); El-Bana, M.S.; Fouad, S.S. [Nano-Science and Semiconductor Laboratories, Department of Physics, Faculty of Education, Ain Shams University, Cairo (Egypt); Sharma, Vineet [Department of Physics and Materials Science, Jaypee University of Information Technology, Waknaghat, Solan, HP 173234 (India)

2016-05-15

In the present paper we have studied the effect of Bi addition on the physical and optical properties of thermally evaporated Te{sub 17}Se{sub 83−x}Bi{sub x} thin films. With Bi addition the density, mean coordination number, mechanical constraints, glass transition temperature increases. The other parameters theoretical energy gap, lone pair electron, deviation from stoichiometry decreases. Transmission spectra have been taken in the spectral range 400 nm–2500 nm using ultraviolet–visible–near infrared spectrophotometer. The fundamental absorption edge shifts towards longer wavelength with Bi incorporation. Optical energy gap and linear refractive index have been determined using transmission spectra. A good correlation has been drawn between the optical and theoretical parameters. Using linear optical parameters, the nonlinear optical susceptibility and nonlinear refractive index have been estimated. - Highlights: • Physical and optical parameters have been analyzed for Te{sub 17}Se{sub 83−x}Bi{sub x} glassy alloys. • The addition of Bi leads to decrease of average heat of atomization and cohesive energy. • The optical band gap decreases with increasing Bi content. • The third order susceptibility and nonlinear refractive index show an increase with increase in the Bi content.

Anomalous dispersion of optical phonons in La2-xSrxCuO4 at low temperatures

International Nuclear Information System (INIS)

Bishoyi, K.C.; Rout, G.C.; Behera, S.N.

2001-01-01

Inelastic neutron scattering measurements of cuprate system show that a discontinuity in dispersion develops in the middle of the highest energy of optical phonon at low temperatures. We present here a microscopic theory to explain the phonon anomaly in doped cuprate system in normal state. Anti-ferromagnetism due to copper moments is introduced in the electronic Hamiltonian. Phonon coupling to the hybridisation between conduction electrons of the system and the doped f-electrons is incorporated. The phonon self energy due to electron-phonon interaction, which involves the electronic density response function, is evaluated explicitly by Zubarev's Green's function technique in finite temperature and small wave vector limit. The temperature dependence of phonon frequency and the anomalous phonon dispersion are calculated numerically and studied by varying the position of the f-level (ε f ), the effective electron-phonon coupling strength (g), staggered field (h), and the hybridisation parameter (V). (author)

Synthesis, vibrational and optical properties of a new three-layered organic-inorganic perovskite (C{sub 4}H{sub 9}NH{sub 3}){sub 4}Pb{sub 3}I{sub 4}Br{sub 6}

Energy Technology Data Exchange (ETDEWEB)

Dammak, T., E-mail: thameurlpa@yahoo.f [Laboratoire de Physique appliquee (LPA), Faculte des Sciences de Sfax, 3018, BP 802 (Tunisia); Elleuch, S. [Laboratoire de Physique appliquee (LPA), Faculte des Sciences de Sfax, 3018, BP 802 (Tunisia); Bougzhala, H. [Laboratoire de cristallochimie et des materiaux, Faculte des Sciences de Tunis (Tunisia); Mlayah, A. [Centre d' Elaboration de Materiaux et d' Etudes Structurales, CNRS-Universite Paul Sabatier, 29 rue Jeanne Marvig, 31055 Toulouse, Cedex 4 (France); Chtourou, R. [Centre de Recherche et des Technologies de l' Energie CRTEn BP. 95, Hammam-Lif 2050, Laboratoire de Photovoltaique et de Semiconducteur (Tunisia); Abid, Y. [Laboratoire de Physique appliquee (LPA), Faculte des Sciences de Sfax, 3018, BP 802 (Tunisia)

2009-09-15

An organic-inorganic hybrid perovskite (C{sub 4}H{sub 9}NH{sub 3}){sub 4}Pb{sub 3}I{sub 4}Br{sub 6} was synthesized and studied by X-ray diffraction, Raman and infrared spectroscopies, optical transmission and photoluminescence. The title compound, abbreviated (C{sub 4}){sub 4}Pb{sub 3}I{sub 4}Br{sub 6}, crystallises in a periodic two-dimensional multilayer structure with P2{sub 1}/a space group. The structure is built up from alternating inorganic and organic layers. Each inorganic layer consists of three sheets of PbX{sub 6} (X=I, Br) octahedra. Raman and infrared spectra of the title compound were recorded in the 100-3500 and 400-4000 cm{sup -1} frequency ranges, respectively. An assignment of the observed vibration modes is reported. Optical transmission measurements, performed on thin films of (C{sub 4}){sub 4}Pb{sub 3}I{sub 4}Br{sub 6}, revealed two absorption bands at 474 and 508 nm. Photoluminescence measurements have shown a green emission peak at 519 nm.

Electron-phonon relaxation and excited electron distribution in gallium nitride

Energy Technology Data Exchange (ETDEWEB)

Zhukov, V. P. [Institute of Solid State Chemistry, Urals Branch of the Russian Academy of Sciences, Pervomayskaya st. 91, Yekaterinburg (Russian Federation); Donostia International Physics Center (DIPC), P. Manuel de Lardizabal 4, 20018 San Sebastian (Spain); Tyuterev, V. G., E-mail: valtyut00@mail.ru [Donostia International Physics Center (DIPC), P. Manuel de Lardizabal 4, 20018 San Sebastian (Spain); Tomsk State Pedagogical University, Kievskaya st. 60, Tomsk (Russian Federation); Tomsk State University, Lenin st. 36, Tomsk (Russian Federation); Chulkov, E. V. [Donostia International Physics Center (DIPC), P. Manuel de Lardizabal 4, 20018 San Sebastian (Spain); Tomsk State University, Lenin st. 36, Tomsk (Russian Federation); Departamento de Fisica de Materiales, Facultad de Ciencias Qumicas, UPV/EHU and Centro de Fisica de Materiales CFM-MPC and Centro Mixto CSIC-UPV/EHU, Apdo. 1072, 20080 San Sebastian (Spain); Echenique, P. M. [Donostia International Physics Center (DIPC), P. Manuel de Lardizabal 4, 20018 San Sebastian (Spain); Departamento de Fisica de Materiales, Facultad de Ciencias Qumicas, UPV/EHU and Centro de Fisica de Materiales CFM-MPC and Centro Mixto CSIC-UPV/EHU, Apdo. 1072, 20080 San Sebastian (Spain)

2016-08-28

We develop a theory of energy relaxation in semiconductors and insulators highly excited by the long-acting external irradiation. We derive the equation for the non-equilibrium distribution function of excited electrons. The solution for this function breaks up into the sum of two contributions. The low-energy contribution is concentrated in a narrow range near the bottom of the conduction band. It has the typical form of a Fermi distribution with an effective temperature and chemical potential. The effective temperature and chemical potential in this low-energy term are determined by the intensity of carriers' generation, the speed of electron-phonon relaxation, rates of inter-band recombination, and electron capture on the defects. In addition, there is a substantial high-energy correction. This high-energy “tail” largely covers the conduction band. The shape of the high-energy “tail” strongly depends on the rate of electron-phonon relaxation but does not depend on the rates of recombination and trapping. We apply the theory to the calculation of a non-equilibrium distribution of electrons in an irradiated GaN. Probabilities of optical excitations from the valence to conduction band and electron-phonon coupling probabilities in GaN were calculated by the density functional perturbation theory. Our calculation of both parts of distribution function in gallium nitride shows that when the speed of the electron-phonon scattering is comparable with the rate of recombination and trapping then the contribution of the non-Fermi “tail” is comparable with that of the low-energy Fermi-like component. So the high-energy contribution can essentially affect the charge transport in the irradiated and highly doped semiconductors.

Acoustic study of YBa sub 2 Cu sub 3 O sub x thin films

Energy Technology Data Exchange (ETDEWEB)

Lee, S.; Chi, C.; Koren, G.; Gupta, A. (IBM Research Division, Thomas J. Watson Research Center, P. O. Box 218, Yorktown Heights, New York 10598 (US))

1991-03-01

The attenuation of surface acoustic waves by epitaxial YBa{sub 2}Cu{sub 3}O{sub {ital x}} films has been studied for {ital x}{congruent}6 to 7. For fully oxygenated samples, the acoustic attenuation as a function of temperature shows two broad peaks at about 135 and 240 K, and decreases monotonically below the lower peak temperature. The cause of attenuation peaks is attributed to scattering by optical phonons. Our data do not show any gap structure at {ital T}{sub {ital c}} due to relatively weak electron-phonon interactions at the acoustic frequencies. As the oxygen deficiency increases, the temperature dependence of the dc resistance changes from metallic to semiconducting and finally to insulating behavior. Acoustic attenuation data correspondingly show a drastic change due to different attenuation mechanisms: from the phonon scattering loss in the metallic regime to the electric-field coupling loss in the semiconducting and insulating regimes. In the latter regimes, the temperature dependence of low-frequency resistance calculated from the attenuation data can be fitted to a three-dimensional Mott variable-range-hopping model.

Active tuning of surface phonon polariton resonances via carrier photoinjection

Science.gov (United States)

Dunkelberger, Adam D.; Ellis, Chase T.; Ratchford, Daniel C.; Giles, Alexander J.; Kim, Mijin; Kim, Chul Soo; Spann, Bryan T.; Vurgaftman, Igor; Tischler, Joseph G.; Long, James P.; Glembocki, Orest J.; Owrutsky, Jeffrey C.; Caldwell, Joshua D.

2018-01-01

Surface phonon polaritons (SPhPs) are attractive alternatives to infrared plasmonics for subdiffractional confinement of infrared light. Localized SPhP resonances in semiconductor nanoresonators are narrow, but that linewidth and the limited extent of the Reststrahlen band limit spectral coverage. To address this limitation, we report active tuning of SPhP resonances in InP and 4H-SiC by photoinjecting free carriers into nanoresonators, taking advantage of the coupling between the carrier plasma and optic phonons to blueshift SPhP resonances. We demonstrate state-of-the-art tuning figures of merit upon continuous-wave excitation (in InP) or pulsed excitation (in 4H-SiC). Lifetime effects cause the tuning to saturate in InP, and carrier redistribution leads to rapid (electronic and phononic excitations.

Measurements of ultrafast dynamics in a superconductor, YBa{sub 2}Cu{sub 3}O{sub 7-{delta}}, and a semiconductor, GaSb

Energy Technology Data Exchange (ETDEWEB)

Smith, D.C

1998-07-01

Measurements of ultrafast dynamics in GaSb and YBa{sub 2}Cu{sub 3}O{sub 7-}{delta} (YBCO) have been made with 1 ps or better resolution using time-resolved optical spectroscopy; pump-probe transmission and reflection, and time-resolved Raman spectroscopy. The study of carrier dynamics in GaSb focuses on the scattering of electrons between the F and L conduction band valleys by zone-boundary phonons {gamma}-L scattering in bulk GaSb and a GaSb/AlSb multiple quantum well sample has been investigated in a series of room temperature degenerate pump-probe transmission experiments with near bandgap excitation. There is a clear difference in the dynamics between experiments where electrons excited in {gamma} can/cannot directly scatter to the L valleys. Ensemble Monte Carlo simulations are presented which are in good agreement with the experiments. The strength of {gamma}-L scattering is quantified using an intervalley deformation potential for a single 'effective' zone-boundary phonon (25meV). A deformation potential of 3.6{+-}0.4 eVA{sup -1} is consistent with both the bulk and quantum well results. The temperature dependence of the dynamics in bulk GaSb is also explored. Time-resolved Raman spectroscopy (E{sub laser}{approx}E{sub 0}+{delta}{sub 0}) has been used to study {gamma}-F scattering by measuring the dynamics of phonons emitted during intravalley scattering. All the measured non-equilibrium phonon populations have a component whose lifetime is greater the phonons anharmonic lifetime. This component is interpreted as following the return of electrons from L to {gamma}. Comparison of the results with the pump-probe experiments indicates that this return is slowed by blocking of {gamma} states. The study of YBCO consists of pump-probe transmission and reflection measurements of thin films and single crystals in both the normal and superconducting states. Measurements of dynamics have been made with a wide range of probe energies lower than in any

Electron-confined LO-phonon scattering in GaAs-Al0.45Ga0.55As ...

Indian Academy of Sciences (India)

resonance [17] – at high field where a longitudinal-optical (LO) phonon mediates a transition ..... This competition is controlled through the factor. Γ = γLLw ... [3] L Eaves, F W Sheard and G A T Toombs, Band structure engineering in semicon-.

Coherent heat transport in 2D phononic crystals with acoustic impedance mismatch

International Nuclear Information System (INIS)

Arantes, A; Anjos, V

2016-01-01

In this work we have calculated the cumulative thermal conductivities of micro-phononic crystals formed by different combinations of inclusions and matrices at a sub-Kelvin temperature regime. The low-frequency phonon spectra (up to tens of GHz) were obtained by solving the generalized wave equation for inhomogeneous media with the plane wave expansion method. The thermal conductivity was calculated from Boltzmann transport theory highlighting the role of the low-frequency thermal phonons and neglecting phonon–phonon scattering. A purely coherent thermal transport regime was assumed throughout the structures. Our findings show that the cumulative thermal conductivity drops dramatically when compared with their bulk counterpart. Depending on the structural composition this reduction may be attributed to the phonon group velocity due to a flattening of the phonon dispersion relation, the extinction of phonon modes in the density of states or due to the presence of complete band gaps. According to the contrast between the inclusions and the matrices, three types of two dimensional phononic crystals were considered: carbon/epoxy, carbon/polyethylene and tungsten/silicon, which correspond respectively to a moderate, strong and very strong mismatch in the mechanical properties of these materials. (paper)

Decay of Wannier-Mott excitons interacting with acoustic phonon in semiconductors with a degenerate valence band

International Nuclear Information System (INIS)

Nguyen Toan Thang; Nguyen Ai Viet; Nguyen Hong Quang

1987-06-01

Decay probabilities of light and heavy excitons interacting with acoustic phonons in cubic semiconductors with a degenerate valence band are calculated. The numerical results for GaAs showed that the decay probability of the light exciton is much greater than that of the heavy one. (author). 10 refs, 1 fig

Judd-Ofelt analysis and temperature dependent upconversion luminescence of Er{sup 3+}/Yb{sup 3+} codoped Gd{sub 2}(MoO{sub 4}){sub 3} phosphor

Energy Technology Data Exchange (ETDEWEB)

Lu, Hongyu [Department of Physics, Harbin Institute of Technology, Harbin 150001 (China); Gao, Yachen [College of Electronic Engineering, Heilongjiang University, Harbin 150080 (China); Hao, Haoyue; Shi, Guang [Department of Physics, Harbin Institute of Technology, Harbin 150001 (China); Li, Dongyu [Department of Physics, Lingnan Normal University, Zhanjiang 524048 (China); Song, Yinglin [Department of Physics, Harbin Institute of Technology, Harbin 150001 (China); Wang, Yuxiao, E-mail: wangyx@hit.edu.cn [Department of Physics, Harbin Institute of Technology, Harbin 150001 (China); Zhang, Xueru, E-mail: xrzhang@hit.edu.cn [Department of Physics, Harbin Institute of Technology, Harbin 150001 (China)

2017-06-15

Although lanthanide doped luminescent materials have been extensively investigated, a quantitative analysis of how temperature affects upconversion luminescence is still incomplete. The Gd{sub 2}(MoO{sub 4}){sub 3}:Er{sup 3+}/Yb{sup 3+} phosphor is synthetized by sol-gel method. Based on the absorption spectra of Er{sup 3+} ions, J-O intensity parameters and radiative transition probabilities are computed to estimate the optical properties. In view of ion-phonon interaction, the phonon-assisted energy transfer and multiphonon relaxation are responsible for the temperature dependent luminescence. Additionally, cross relaxation probability for {sup 4}I{sub 11/2}+{sup 4}I{sub 11/2}→{sup 4}I{sub 15/2}+{sup 4}F{sub 7/2} is determined to be 240 s{sup −1} through quantitative simulation of ion-ion interaction. These meaningful results are of vital values for the field of laser crystal and optical temperature sensing.

Phonon spectra of elpasolites Cs{sub 2}NaRF{sub 6} (R=Y,Yb): Ab initio calculations

Energy Technology Data Exchange (ETDEWEB)

Chernyshev, Vladimir, E-mail: Vladimir.Chernyshev@urfu.ru; Petrov, Vladislav; Nikiforov, Anatoliy; Zakiryanov, Dmitriy [Ural Federal University, Ekaterinburg (Russian Federation)

2015-12-07

The influence of hydrostatic pressure on structure and dynamics of a crystal lattice of elpasolites Cs{sub 2}NaYbF{sub 6} and Cs{sub 2}NaYF{sub 6} (S.G. 225) within ab initio approach is investigated. Frequencies and irreducible representations (irreps) of phonon modes are determined. Elastic constants are calculated. The calculations are carried out within MO LCAO approach using DFT method with hybrid functionalities of B3LYP and PBE0 in CRYSTAL09 periodic code. For the description of rare earth ion the pseudopotential replacing internal orbitals including 4f orbitals was used. External 5s and 5p orbitals defining chemical bond were described by valence basis sets.

Influence of composition on optical and dispersion parameters of thermally evaporated non-crystalline Cd{sub 50}S{sub 50−x}Se{sub x} thin films

Energy Technology Data Exchange (ETDEWEB)

Hassanien, A.S., E-mail: a.s.hassanien@gmail.com [Engineering Mathematics and Physics Dept., Faculty of Engineering (Shoubra), Benha University (Egypt); Physics Department, Faculty of Science and Humanities in Ad-Dawadmi, Shaqra University, 11911 (Saudi Arabia); Akl, Alaa A. [Physics Department, Faculty of Science and Humanities in Ad-Dawadmi, Shaqra University, 11911 (Saudi Arabia)

2015-11-05

Non-crystalline thin films of chalcogenide Cd{sub 50}S{sub 50−x}Se{sub x} system (30 ≤ x ≤ 50) were obtained by thermal evaporation technique onto a pre-cleaned glass substrate at a vacuum of 8.2 × 10{sup −4} Pa. The deposition rate and film thickness were kept constant at about 8 nm/s and 200 nm, respectively. Amorphous/crystalline nature and chemical composition of films have been checked using X-ray diffraction and energy dispersive X-ray spectroscopy (EDX). Optical properties of thin films were investigated and studied using the corrected transmittance, T(λ) and corrected reflectance, R(λ) measurements. Obtained data reveal that, the indirect optical energy gap (E{sub g}) was decreased from 2.21 to 1.57 eV. On the contrary, Urbach energy (band tail width), E{sub U} was found to be increased from 0.29 to 0.45 eV. This behavior is believed to be associated with the increase of Se-content instead of S-content in the thin films of Cd{sub 50}S{sub 50−x}Se{sub x} system. Chemical bond approach model, CBA was used to analyze the obtained values of E{sub g} and E{sub U}. Optical density, skin depth, extinction coefficient, refractive index and optical conductivity of chalcogenide CdSSe thin films were discussed as functions of Se-content. Using Wemple-DiDomenico single oscillator model, the refractive index dispersion and energy parameters and their dependence on Se content were studied. - Highlights: • Amorphous thin films of thickness 200 nm of Cd{sub 50}S{sub 50−x}Se{sub x} (30 ≤ x ≤ 50) have prepared. • Optical properties, indirect optical energy gap and band tail width were studied. • Chemical bond approach, CBA was used to analyze the obtained values of E{sub g} and E{sub U}. • New data of dispersion refractive index parameters were investigated and discussed.

Longitudinal polar optical phonons in InN/GaN single and double het- erostructures

Energy Technology Data Exchange (ETDEWEB)

Ardali, Sukru; Tiras, Engin [Department of Physics, Faculty of Science, Anadolu University, Yunus Emre Campus, Eskisehir 26470 (Turkey); Gunes, Mustafa; Balkan, Naci [School of Computer Science and Electronic Engineering, University of Essex, Wivenhoe Park, Colchester CO4 3SQ (United Kingdom); Ajagunna, Adebowale Olufunso; Iliopoulos, Eleftherios; Georgakilas, Alexandros [Microelectronics Research Group, IESL, FORTH and Physics Department, University of Crete, P.O. Box 1385, 71110 Heraklion-Crete (Greece)

2011-05-15

Longitudinal optical phonon energy in InN epi-layers has been determined independently from the Raman spectroscopy and temperature dependent Hall mobility measurements. Raman spectroscopy technique can be used to obtain directly the LO energy where LO phonon scattering dominates transport at high temperature. Moreover, the Hall mobility is determined by the scattering of electrons with LO phonons so the data for the temperature dependence of Hall mobility have been used to calculate the effective energy of longitudinal optical phonons.The samples investigated were (i) single heterojunction InN with thicknesses of 1.08, 2.07 and 4.7 {mu}m grown onto a 40 nm GaN buffer and (ii) GaN/InN/AlN double heterojunction samples with InN thicknesses of 0.4, 0.6 and 0.8 {mu}m. Hall Effect measurements were carried out as a function of temperature in the range between T = 1.7 and 275 K at fixed magnetic and electric fields. The Raman spectra were obtained at room temperature. In the experiments, the 532 nm line of a nitrogen laser was used as the excitation source and the light was incident onto the samples along of the growth direction (c-axis). The results, obtained from the two independent techniques suggest the following: (1) LO phonon energies obtained from momentum relaxation experiments are generally slightly higher than those obtained from the Raman spectra. (2) LO phonon energy for the single heterojunctions does not depend on the InN thickness. (3) In double heterostructures, with smaller InN thicknesses and hence with increased strain, LO phonon energy increases by 3% (experimental accuracy is < 1%) when the InN layer thickness increases from 400 to 800 nm (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Optical properties and visible-light-driven photocatalytic activity of Bi{sub 8}V{sub 2}O{sub 17} nanoparticles

Energy Technology Data Exchange (ETDEWEB)

Pu, Yinfu; Liu, Ting; Huang, Yanlin [Soochow University, College of Chemistry, Chemical Engineering and Materials Science (China); Chen, Cuili; Kim, Sun Il; Seo, Hyo Jin, E-mail: hjseo@pknu.ac.kr [Pukyong National University, Department of Physics and Interdisciplinary Program of Biomedical, Mechanical & Electrical Engineering (Korea, Republic of)

2015-05-15

Bi{sub 8}V{sub 2}O{sub 17} (4Bi{sub 2}O{sub 3}·V{sub 2}O{sub 5}) nanoparticles with the uniform size of about 50 nm were fabricated through the Pechini method. The crystal structure was investigated by X-ray powder diffraction and the structural refinement. The surface of the as-synthesized samples was characterized by scanning electron microscopy, energy dispersive X-ray spectroscopy (EDX), transmission electron microscopy, and X-ray photoelectron spectroscopy. The optical properties, band structure, and the degradation mechanisms were discussed. The experimental results demonstrate that Bi{sub 8}V{sub 2}O{sub 17} nanoparticles have an efficient visible-light absorption with band-gap energy of 1.85 eV and a direct allowed electronic transition. The photocatalytic activity was evaluated by the photodegradation of the methylene blue (MB) under visible-light irradiation (λ > 420 nm) as a function of time. These results indicate that Bi{sub 8}V{sub 2}O{sub 17} could be a potential photocatalyst driven by visible light. The effective photocatalytic activity was discussed on the base of the crystal structure characteristic.

Optical characterization of Zn-doped In{sub 0.14}Ga{sub 0.86}As{sub 0.13}Sb{sub 0.87} layers grown by liquid phase epitaxy

Energy Technology Data Exchange (ETDEWEB)

Diaz-Reyes, Joel, E-mail: jdiazr2010@yahoo.com [CIBA-IPN, Ex-Hacienda de San Juan Molino Km. 1.5. Tepetitla, Tlaxcala 90700. Mexico (Mexico); Rodriguez-Fragoso, Patricia; Mendoza-Alvarez, Julio Gregorio [Departamento de Fisica, CINVESTAV-IPN, A.P. 14-740, Mexico, D.F. 07000 (Mexico)

2013-02-15

Quaternary layers were grown by liquid phase epitaxy on (1 0 0) GaSb substrates under lattice-matching conditions. The low-temperature photoluminescence of p-type In{sub x}Ga{sub 1-x}As{sub y}Sb{sub 1-y} was obtained as a function of incorporated zinc concentration. The photoluminescence spectra were interpreted using a model which takes into account nonparabolicity of the valence band. Calculations of the peak position and photoluminescence transitions were performed. Both the band filling as well as band tailing due to Coulomb interaction of free carriers with ionized impurities and shrinkage due to exchange interaction between free carriers were considered in order to properly account for the observed features of photoluminescence spectra. It is proposed that low-temperature photoluminescence band-to-band energy transition can be used to obtain the carrier concentration in p-type In{sub x}Ga{sub 1-x}As{sub y}Sb{sub 1-y}. This method could be used to estimate free carrier concentration ranging from 6.036 Multiplication-Sign 10{sup 16} to 1.350 Multiplication-Sign 10{sup 18} cm{sup -3}. - Highlights: Black-Right-Pointing-Pointer In this work the optical characterization of InGaAsSb highly doped with zinc by grown LPE.is reported Black-Right-Pointing-Pointer It analyses the LT-PL of p-type InGaAsSb layersis analzysed as a function of incorporated zinc concentration. Black-Right-Pointing-Pointer The PL was interpreted using a model that takes into account nonparabolicity of the valence band. Black-Right-Pointing-Pointer The band-to-band transition energy can be used to estimate the hole concentration in InGaAsSb.

Phononic crystals and elastodynamics: Some relevant points

Directory of Open Access Journals (Sweden)

N. Aravantinos-Zafiris

2014-12-01

Full Text Available In the present paper we review briefly some of the first works on wave propagation in phononic crystals emphasizing the conditions for the creation of acoustic band-gaps and the role of resonances to the band-gap creation. We show that useful conclusions in the analysis of phononic band gap structures can be drawn by considering the mathematical similarities of the basic classical wave equation (Helmholtz equation with Schrödinger equation and by employing basic solid state physics concepts and conclusions regarding electronic waves. In the second part of the paper we demonstrate the potential of phononic systems to be used as elastic metamaterials. This is done by demonstrating negative refraction in phononic crystals and subwavelength waveguiding in a linear chain of elastic inclusions, and by proposing a novel structure with close to pentamode behavior. Finally the potential of phononic structures to be used in liquid sensor applications is discussed and demonstrated.

Strong-coupling electron-phonon superconductivity in H{sub 3}S

Energy Technology Data Exchange (ETDEWEB)

Pickett, Warren E. [University of California, Davis, CA (United States); Quan, Yundi [Beijing Normal University, Beijing (China)

2016-07-01

The superconducting phase of hydrogen sulfide at T{sub c} = 200 K observed by Eremets' group at pressures around 200 GPa is simple bcc Im-3m H{sub 3}S. Remarkably, this record high temperature superconductor was predicted beforehand by Duan et al., so the theory would seem to be in place. Here we will discuss why this is not true. Several extremes are involved: extreme pressure, meaning reduction of volume;extremely high H phonon energy scale around 1400 K; unusually narrow peak in the density of states at the Fermi level; extremely high temperature for a superconductor. Analysis of the H3S electronic structure and two important van Hove singularities (vHs) reveal the effect of sulfur. The implications for the strong coupling Migdal-Eliashberg theory will be discussed. Followed by comments on ways of increasing T{sub c} in H{sub 3}S-like materials.

Investigation the effect of lattice angle on the band gap width in 3D phononic crystals with rhombohedral(I) lattice

Science.gov (United States)

Salehi, H.; Aryadoust, M.; Shoushtari, M. Zargar

2014-07-01

In this paper, the propagation of acoustic waves in the phononic crystal of 3D with rhombohedral(I) lattice is studied theoretically. The crystal composite constituted of nickel spheres embedded in epoxy. The calculations of the band structure and density of states are performed with the plane wave expansion method in the irreducible part of Brillouin zone. In the present work, we have investigated the effect of lattice angle on the band structure and width of the band gap rhombohedral(I) lattice in the irreducible part of the first Brillouin zone and its planes separately. The results show that more than one complete band gape are formed in the four planes of the irreducible part. The most complete band gaps are formed in the (111) plane and the widest complete band gap in (443) with an angle greater than 80. So, if the sound passes through the (111) and (443) planes for the lattice angle close to 90, the crystal phononic displays the excellent insulation behavior. Moreover, in the other planes, the lattice angle does not affect on the width and the number of band gaps. Also, for the filling fraction 5 %, the widest complete band gap is formed. These results are consistent with the effect of symmetry on the band gap width, because the (111) plane has the most symmetry.

Phonon anomalies and electron-phonon coupling of metal surfaces and thin films; Phononenanomalien und Elektron-Phonon-Kopplung an Metalloberflaechen und duennen Schichten

Energy Technology Data Exchange (ETDEWEB)

Flach, B.

2000-01-01

This thesis has two topics: One is the investigation of an adsorbate induced phonon anomaly on W(110) and Mo{sub 1-x}Re{sub x}(110) (x = 5, 15, 25%) with inelastic helium atom scattering (HAS). The other one is the study of the growth, morphology and dynamics of ultra-thin lithium films deposited on W(110). In 1992 a giant phonon anomaly was found by J. Luedecke on the hydrogen saturated W(110) and Mo(110) surfaces. The anomaly consists of a deep and sharp indentation in the phonon dispersion curves in which the phonon energy nearly drops to zero ({omega}{sub 1}). In addition, a small and broad dip in the surface Rayleigh mode is observed ({omega}{sub 2}). The anomaly appears in the anti {gamma}-H- as well as in the anti {gamma}-S-direction of the surface Brillouin zone (SBZ). Since its first discovery, numerous other experimental and theoretical studies have followed. In the present work the effects is reinvestigated and experimental parameters, such as the crystal temperature and the incident energy, were changed in order to study their influence on the anomalous phonon behavior. In the case of H/Mo(110) the substrate was changed as well by alloying with small amounts of rhenium. In the present experiments a strong crystal temperature dependence of the {omega}{sub 2}-branch was found which leads to lower energies at the 'dip' for smaller temperatures, while the {omega}{sub 1}-anomaly remains unchanged. Such behavior agrees well with the picture that the {omega}{sub 2}-branch is due to a Kohn anomaly. (orig.)

Bulk-like-phonon polaritons in one-dimensional photonic superlattices

Science.gov (United States)

Gómez-Urrea, H. A.; Duque, C. A.; Mora-Ramos, M. E.

2017-05-01

We investigate the properties of a one-dimensional photonic superlattice made of alternating layers of air and wurtzite aluminum nitride. The Maxwell equations are solved for any admissible values of the angle of incidence by means of the transfer matrix formalism. The band structure of the frequency spectrum is obtained, as well as the density of states and transmittance associated to both the TM and TE modes. The dispersion relations indicate that for oblique incidence and TM modes there is a component of the electric field oriented along the growth direction of the structure that couples with the longitudinal optical phonon oscillations of the aluminum nitride thus leading to the appearance of longitudinal phonon polaritons in the system.

Influence of interface layer on optical properties of sub-20 nm-thick TiO2 films

Science.gov (United States)

Shi, Yue-Jie; Zhang, Rong-Jun; Li, Da-Hai; Zhan, Yi-Qiang; Lu, Hong-Liang; Jiang, An-Quan; Chen, Xin; Liu, Juan; Zheng, Yu-Xiang; Wang, Song-You; Chen, Liang-Yao

2018-02-01

The sub-20 nm ultrathin titanium dioxide (TiO2) films with tunable thickness were deposited on Si substrates by atomic layer deposition (ALD). The structural and optical properties were acquired by transmission electron microscopy, atomic force microscopy and spectroscopic ellipsometry. Afterwards, a constructive and effective method of analyzing interfaces by applying two different optical models consisting of air/TiO2/Ti x Si y O2/Si and air/effective TiO2 layer/Si, respectively, was proposed to investigate the influence of interface layer (IL) on the analysis of optical constants and the determination of band gap of TiO2 ultrathin films. It was found that two factors including optical constants and changing components of the nonstoichiometric IL could contribute to the extent of the influence. Furthermore, the investigated TiO2 ultrathin films of 600 ALD cycles were selected and then annealed at the temperature range of 400-900 °C by rapid thermal annealing. Thicker IL and phase transition cause the variation of optical properties of TiO2 films after annealing and a shorter electron relaxation time reveals the strengthened electron-electron and electron-phonon interactions in the TiO2 ultrathin films at high temperature. The as-obtained results in this paper will play a role in other studies of high dielectric constants materials grown on Si substrates and in the applications of next generation metal-oxide-semiconductor devices.

Synthesis, surface properties and optical characteristics of CuV{sub 2}O{sub 6} nanofibers

Energy Technology Data Exchange (ETDEWEB)

Wang, Fengyun, E-mail: fywang@qdu.edu.cn [College of Physics and Cultivation Base for State Key Laboratory, Qingdao University, Qingdao 266071 (China); Zhang, Hongchao [College of Physics and Cultivation Base for State Key Laboratory, Qingdao University, Qingdao 266071 (China); Liu, Lei [School of Materials Science and Engineering, Shandong University of Science and Technology, Qingdao 266590 (China); Shin, Byoungchul [Electronic Ceramics Center, Dong-Eui University, Busan, 614-714 (Korea, Republic of); Shan, Fukai, E-mail: fkshan@qdu.edu.cn [College of Physics and Cultivation Base for State Key Laboratory, Qingdao University, Qingdao 266071 (China)

2016-07-05

In{sup 3+}-doped CuV{sub 2}O{sub 6} nanofibers were prepared via the hydrothermal synthesis method, which produced fibers with a typical diameter of 100 nm, and a length of 1–5 μm. The nanofibers grew in a preferred [020] direction. The crystal phase together with the structure was studied via X-ray polycrystalline diffraction (XRD) and the Rietveld refinement. The surface characteristics of this nanostructure were measured with a scanning electron microscope (SEM), energy dispersive spectra (EDS), transmission electron microscopy (TEM), and N{sub 2}–adsorption–desorption isotherms. Photo-activities were evaluated by optical absorption, luminescence, and decay behaviors. The band-gap structures and positions were investigated. The vanadate has an efficient optical absorption from the UV to the visible wavelength region with an indirect allowed transition characterized by the narrow gap energy of 1.96 eV. The photocatalysis was investigated by the photo-degradation of RhB solutions irradiated by visible light. Correspondingly, CuV{sub 2}O{sub 6}:In{sup 3+} nanofibers possess quenched luminescence and have a more efficient photocatalytic activity on the RhB degradation. Photocatalytic mechanisms were proposed based on the experimental results, the band-energy positions, and the trapping experiments. The coexistence of V{sup 4+}/V{sup 5+} ions and induced-color centers was discussed on the proposed photocatalytic mechanism. The results demonstrated the promising potency of such In{sup 3+}-doped CuV{sub 2}O{sub 6} nanofibers for technological applications due to their high photo-activity and good cycling performance with the fiber morphology. - Highlights: • Recyclable α-CuV{sub 2}O{sub 6} nanofibers were successfully prepared via hydrothermal synthesis. • In-doped α-CuV{sub 2}O{sub 6} as a visible-light-driven photocatalyst was firstly developed. • The nanofibers display typical indirect allowed transitions with narrow band of 1.96 eV. • It presents

Thermal expansion of mullite-type Bi{sub 2}Al{sub 4}O{sub 9}: A study by X-ray diffraction, vibrational spectroscopy and density functional theory

Energy Technology Data Exchange (ETDEWEB)

Mangir Murshed, M., E-mail: murshed@uni-bremen.de [Chemische Kristallographie fester Stoffe, Institut für Anorganische Chemie, Universität Bremens, Leobener Straße, D-28359 Bremen (Germany); Mendive, Cecilia B.; Curti, Mariano [Departamento de Química, Facultad de Ciencias Exactas y Naturales, Universidad Nacional de Mar del Plata, Dean Funes 3350, B7600AYL Mar del Plata (Argentina); Šehović, Malik [Chemische Kristallographie fester Stoffe, Institut für Anorganische Chemie, Universität Bremens, Leobener Straße, D-28359 Bremen (Germany); Friedrich, Alexandra [Institut für Geowissenschaften, Abteilung Kristallographie, Goethe-Universität Frankfurt, Altenhöferallee 1, D-60438 Frankfurt am Main (Germany); Fischer, Michael [Kristallographie, FB Geowissenschaften, Universität Bremen, Klagenfurter Straße, D-28359 Bremen (Germany); Gesing, Thorsten M. [Chemische Kristallographie fester Stoffe, Institut für Anorganische Chemie, Universität Bremens, Leobener Straße, D-28359 Bremen (Germany)

2015-09-15

Polycrystalline Bi{sub 2}Al{sub 4}O{sub 9} powder samples were synthesized using the glycerine method. Single crystals were produced from the powder product in a Bi{sub 2}O{sub 3} melt. The lattice thermal expansion of the mullite-type compound was studied using X-ray diffraction, Raman spectroscopy and density functional theory (DFT). The metric parameters were modeled using Grüneisen approximation for the zero pressure equation of state, where the temperature-dependent vibrational internal energy was calculated from the Debye characteristic frequency. Both the first-order and second-order Grüneisen approximations were applied for modeling the volumetric expansion, and the second-order approach provided physically meaningful axial parameters. The phonon density of states as well as phonon dispersion guided to set the characteristic frequency for simulation. The experimental infrared and Raman phonon bands were compared with those calculate from the DFT calculations. Selective Raman modes were analyzed for the thermal anharmonic behaviors using simplified Klemens model. The respective mode Grüneisen parameters were calculated from the pressure-dependent Raman spectra. - Graphical abstract: Crystal structure of mullite-type Bi{sub 2}Al{sub 4}O{sub 9} showing the edge-sharing AlO{sub 6} octahedra running parallel to the c-axis. - Highlights: • Thermal expansion of Bi{sub 2}Al{sub 4}O{sub 9} was studied using XRD, FTIR, Raman and DFT. • Metric parameters were modeled using Grüneisen approximation. • Phonon DOS and phonon dispersion helped to set the Debye frequency. • Mode Grüneisen parameters were calculated from the pressure-dependent Raman spectra. • Anharmonicity was analyzed for some selective Raman modes.

High-frequency homogenization of zero frequency stop band photonic and phononic crystals

CERN Document Server

Antonakakis, Tryfon; Guenneau, Sebastien

2013-01-01

We present an accurate methodology for representing the physics of waves, for periodic structures, through effective properties for a replacement bulk medium: This is valid even for media with zero frequency stop-bands and where high frequency phenomena dominate. Since the work of Lord Rayleigh in 1892, low frequency (or quasi-static) behaviour has been neatly encapsulated in effective anisotropic media. However such classical homogenization theories break down in the high-frequency or stop band regime. Higher frequency phenomena are of significant importance in photonics (transverse magnetic waves propagating in infinite conducting parallel fibers), phononics (anti-plane shear waves propagating in isotropic elastic materials with inclusions), and platonics (flexural waves propagating in thin-elastic plates with holes). Fortunately, the recently proposed high-frequency homogenization (HFH) theory is only constrained by the knowledge of standing waves in order to asymptotically reconstruct dispersion curves an...

Effect of thermal phonons on the superconducting transition temperature

International Nuclear Information System (INIS)

Leavens, C.R.; Talbot, E.

1983-01-01

There is no consensus in the literature on whether or not thermal phonons depress the superconducting transition temperature T/sub c/. In this paper it is shown by accurate numerical solution of the real-frequency Eliashberg equations for the pairing self-energy phi and renormalization function Z that thermal phonons in the kernel for phi raise T/sub c/ but those in Z lower it by a larger amount so that the net effect is to depress T/sub c/. (A previous calculation which ignored the effect of thermal phonons in phi overestimated the suppression of T/sub c/ by at least a factor of 3.) It is shown how to switch off the thermal phonons in the imaginary-frequency Eliashberg equations, exactly for Z and approximately for phi. The real-frequency and approximate imaginary-frequency results for the depression of T/sub c/ by thermal phonons are in very satisfactory agreement. Thermal phonons are found to depress the transition temperature of Nb 3 Sn by only 2%. It is estimated that the suppression of T/sub c/ by thermal phonons saturates at about 50% in the limit of very strong electron-phonon coupling

Phonon structures of GaN-based random semiconductor alloys

Science.gov (United States)

Zhou, Mei; Chen, Xiaobin; Li, Gang; Zheng, Fawei; Zhang, Ping

2017-12-01

Accurate modeling of thermal properties is strikingly important for developing next-generation electronics with high performance. Many thermal properties are closely related to phonon dispersions, such as sound velocity. However, random substituted semiconductor alloys AxB1-x usually lack translational symmetry, and simulation with periodic boundary conditions often requires large supercells, which makes phonon dispersion highly folded and hardly comparable with experimental results. Here, we adopt a large supercell with randomly distributed A and B atoms to investigate substitution effect on the phonon dispersions of semiconductor alloys systematically by using phonon unfolding method [F. Zheng, P. Zhang, Comput. Mater. Sci. 125, 218 (2016)]. The results reveal the extent to which phonon band characteristics in (In,Ga)N and Ga(N,P) are preserved or lost at different compositions and q points. Generally, most characteristics of phonon dispersions can be preserved with indium substitution of gallium in GaN, while substitution of nitrogen with phosphorus strongly perturbs the phonon dispersion of GaN, showing a rapid disintegration of the Bloch characteristics of optical modes and introducing localized impurity modes. In addition, the sound velocities of both (In,Ga)N and Ga(N,P) display a nearly linear behavior as a function of substitution compositions. Supplementary material in the form of one pdf file available from the Journal web page at http://https://doi.org/10.1140/epjb/e2017-80481-0.

Optical and Dielectric Properties of CuAl<sub>2sub>O>4sub> Films Synthesized by Solid-Phase Epitaxy

Energy Technology Data Exchange (ETDEWEB)

Leu, L. C. [University of Florida, Gainesville; Norton, David P. [University of Florida; Jellison Jr, Gerald Earle [ORNL; Selvamanickam, V. [SuperPower Incorporated, Schenectady, New York; Xiong, X. [SuperPower Incorporated, Schenectady, New York

2007-01-01

The synthesis and properties of CuAl{sub 2}O{sub 4} thin films have been examined. The CuAl{sub 2}O{sub 4} films were deposited via reactive direct current magnetron sputter using a CuAl{sub 2} target. As-deposited films were amorphous. Post-deposition annealing at high temperature in oxygen yielded solid-phase epitaxy on MgO. The film orientation was cube-on-cube epitaxy on (001) MgO single-crystal substrates. The films were transparent to visible light. The band gap of crystalline CuAl{sub 2}O{sub 4} was determined to be {approx} 4 eV using a Tauc plot from the optical transmission spectrum. The dielectric constant of the amorphous films was determined to be {approx} 20-23 at 1-100 kHz.

Electron mobility variance in the presence of an electric field: Electron-phonon field-induced tunnel scattering

International Nuclear Information System (INIS)

Melkonyan, S.V.

2012-01-01

The problem of electron mobility variance is discussed. It is established that in equilibrium semiconductors the mobility variance is infinite. It is revealed that the cause of the mobility variance infinity is the threshold of phonon emission. The electron-phonon interaction theory in the presence of an electric field is developed. A new mechanism of electron scattering, called electron-phonon field-induced tunnel (FIT) scattering, is observed. The effect of the electron-phonon FIT scattering is explained in terms of penetration of the electron wave function into the semiconductor band gap in the presence of an electric field. New and more general expressions for the electron-non-polar optical phonon scattering probability and relaxation time are obtained. The results show that FIT transitions have principle meaning for the mobility fluctuation theory: mobility variance becomes finite.

Synthesis, surface and optical properties of Ag{sub 2}CaV{sub 4}O{sub 12} nanoparticles for dye removal under visible irradiation

Energy Technology Data Exchange (ETDEWEB)

Lu, Yuting [State and Local Joint Engineering Laboratory for Novel Functional Polymeric Materials, College of Chemistry, Chemical Engineering and Materials Science, Soochow University, Suzhou 215123 (China); Wan, Yingpeng [Department of Physics and Interdisciplinary Program of Biomedical, Mechanical & Electrical Engineering, Pukyong National University, Busan 608-737 (Korea, Republic of); Bi, Shala; Weng, Honggen [State and Local Joint Engineering Laboratory for Novel Functional Polymeric Materials, College of Chemistry, Chemical Engineering and Materials Science, Soochow University, Suzhou 215123 (China); Huang, Yanlin, E-mail: huang@suda.edu.cn [State and Local Joint Engineering Laboratory for Novel Functional Polymeric Materials, College of Chemistry, Chemical Engineering and Materials Science, Soochow University, Suzhou 215123 (China); Qin, Lin [Department of Physics and Interdisciplinary Program of Biomedical, Mechanical & Electrical Engineering, Pukyong National University, Busan 608-737 (Korea, Republic of); Seo, Hyo Jin, E-mail: hjseo@pknu.ac.kr [Department of Physics and Interdisciplinary Program of Biomedical, Mechanical & Electrical Engineering, Pukyong National University, Busan 608-737 (Korea, Republic of)

2016-09-01

Ag-containing compounds are regarded as potential candidates for the efficient photocatalyst driven by visible-light. In this work, nano-sized Ag{sub 2}CaV{sub 4}O{sub 12} was prepared via a modified Pechini synthesis. The detailed structural refinement of X-ray diffraction (XRD) pattern indicates that the Ag{sub 2}CaV{sub 4}O{sub 12} crystallizes in tetragonal system with the space group of P4/nbm (125), Z = 2. The surface property of this vanadate was measured by the scanning electron microscope (SEM), energy dispersive spectra (EDS), transmission electron microscopy (TEM), and nitrogen adsorption-desorption isotherm. The sample has an efficient optical absorption in the wavelength from UV to visible region characterized by its narrow band-gap energy of 2.231 eV with an indirect allowed property. The valence band maximum is composed of multiple states of Ag-d and O-p resulting in a narrow band. The excellent photocatalytic activity of Ag{sub 2}CaV{sub 4}O{sub 12} nanoparticles was tested by the photodegradation of rhodamine B (RhB), methylene blue (MB) and phenol solutions excited by visible-light. The photocatalytic mechanism was suggested according to experimental results and the band energy positions. - Highlights: • A new visible-light-driven photocatalyst of Ag{sub 2}CaV{sub 4}O{sub 12} was developed. • It has a narrow band gap of 2.231 eV with an indirect allowed characteristic. • Ag{sub 2}CaV{sub 4}O{sub 12} shows high activity in the MB degradation under visible light. • The photocatalytic ability is mainly driven by the ·OH radicals.

Band structure of cavity-type hypersonic phononic crystals fabricated by femtosecond laser-induced two-photon polymerization

Energy Technology Data Exchange (ETDEWEB)

Rakhymzhanov, A. M.; Utegulov, Z. N., E-mail: zhutegulov@nu.edu.kz, E-mail: fytas@mpip-mainz.mpg.de [Department of Physics, School of Science and Technology, Nazarbayev University, Astana 010000 (Kazakhstan); Optics Laboratory, National Laboratory Astana, Nazarbayev University, Astana 10000 (Kazakhstan); Gueddida, A. [Institut d' Electronique, Microélectronique et Nanotechnologie, 59650 Villeneuve d' Ascq (France); LPMR, Département de Physique, Faculté des Sciences, Université Mohamed I, 60000 Oujda (Morocco); Alonso-Redondo, E. [Max Planck Institute of Polymer Research, Ackermannweg 10, 55128 Mainz (Germany); Perevoznik, D.; Kurselis, K. [Laser Zentrum Hannover e.V., 30419 Hannover (Germany); Chichkov, B. N. [Laser Zentrum Hannover e.V., 30419 Hannover (Germany); Institute of Laser and Information Technologies RAS, Moscow, 142092 Troitsk (Russian Federation); El Boudouti, E. H. [LPMR, Département de Physique, Faculté des Sciences, Université Mohamed I, 60000 Oujda (Morocco); Djafari-Rouhani, B. [Institut d' Electronique, Microélectronique et Nanotechnologie, 59650 Villeneuve d' Ascq (France); Fytas, G., E-mail: zhutegulov@nu.edu.kz, E-mail: fytas@mpip-mainz.mpg.de [Max Planck Institute of Polymer Research, Ackermannweg 10, 55128 Mainz (Germany); Department of Materials Science, University of Crete and FORTH, 71110 Heraklion (Greece)

2016-05-16

The phononic band diagram of a periodic square structure fabricated by femtosecond laser pulse-induced two photon polymerization is recorded by Brillouin light scattering (BLS) at hypersonic (GHz) frequencies and computed by finite element method. The theoretical calculations along the two main symmetry directions quantitatively capture the band diagrams of the air- and liquid-filled structure and moreover represent the BLS intensities. The theory helps identify the observed modes, reveals the origin of the observed bandgaps at the Brillouin zone boundaries, and unravels direction dependent effective medium behavior.

Study of optical phonon modes of CdS nanoparticles using Raman

Indian Academy of Sciences (India)

In this paper we report the study of optical phonon modes of nanoparticles of CdS using Raman spectroscopy. Nanoparticle sample for the present study was synthesized through chemical precipitation technique. The CdS nanoparticles were then subjected to heat treatment at low temperature (150°C) for extended time ...

Evidence for second-phonon nuclear wobbling

International Nuclear Information System (INIS)

Jensen, D.R.; Hagemann, G.B.; Herskind, B.; Sletten, G.; Wilson, J.N.; Hamamoto, I.; Odegaard, S.W.; Spohr, K.; Huebel, H.; Bringel, P.; Neusser, A.; Schoenwasser, G.; Singh, A.K.; Ma, W.C.; Amro, H.; Bracco, A.; Leoni, S.; Benzoni, G.; Maj, A.; Petrache, C.M.

2002-01-01

The nucleus 163 Lu has been populated through the reaction 139 La( 29 Si,5n) with a beam energy of 157 MeV. Three triaxial, strongly deformed (TSD) bands have been observed with very similar rotational properties. The first excited TSD band has earlier been assigned as a one-phonon wobbling excitation built on the lowest-lying (yrast) TSD band. The large B(E2) out /B(E2) in value obtainable for one of four observed transitions between the second and first excited TSD bands is in good agreement with particle-rotor calculations for a two-phonon wobbling excitation

Tuning the band gap of PbCrO{sub 4} through high-pressure: Evidence of wide-to-narrow semiconductor transitions

Energy Technology Data Exchange (ETDEWEB)

Errandonea, D., E-mail: daniel.errandonea@uv.es [Departamento de Física Aplicada-ICMUV, Universitat de València, MALTA ConsoliderTeam, C/Dr. Moliner 50, 46100 Burjassot (Spain); Bandiello, E.; Segura, A. [Departamento de Física Aplicada-ICMUV, Universitat de València, MALTA ConsoliderTeam, C/Dr. Moliner 50, 46100 Burjassot (Spain); Hamlin, J.J.; Maple, M.B. [Department of Physics, University of California, San Diego, La Jolla, CA 92093 (United States); Rodriguez-Hernandez, P.; Muñoz, A. [Departamento de Física Fundamental II, Instituto de Materiales y Nanotecnología, Universidad de La Laguna, MALTA ConsoliderTeam, La Laguna, 38205 Tenerife (Spain)

2014-02-25

Highlights: • Electronic and optical properties of PbCrO{sub 4} are studied under compression. • Band-gap collapses are observed and correlated with structural phase transitions. • PbCrO{sub 4} band-gap is reduced from 2.3 to 0.8 eV in a 20 GPa range. • PbCrO{sub 4} is an n-type semiconductor with donor levels associated to Frenkel defects. • A deep-to-shallow donor transformation at HP induces a large resistivity decrease. -- Abstract: The electronic transport properties and optical properties of lead(II) chromate (PbCrO{sub 4}) have been studied at high pressure by means of resistivity, Hall-effect, and optical-absorption measurements. Band-structure first-principle calculations have been also performed. We found that the low-pressure phase is a direct band-gap semiconductor (Eg = 2.3 eV) that shows a high resistivity. At 3.5 GPa, associated to a structural phase transition, a band-gap collapse takes place, becoming Eg = 1.8 eV. At the same pressure the resistivity suddenly decreases due to an increase of the carrier concentration. In the HP phase, PbCrO{sub 4} behaves as an n-type semiconductor, with a donor level probably associated to the formation of oxygen vacancies. At 15 GPa a second phase transition occurs to a phase with Eg = 1.2 eV. In this phase, the resistivity increases as pressure does probably due to the self-compensation of donor levels and the augmentation of the scattering of electrons with ionized impurities. In the three phases the band gap red shifts under compression. At 20 GPa, Eg reaches a value of 0.8 eV, behaving PbCrO{sub 4} as a narrow-gap semiconductor.

Pulsed laser deposition of HfO{sub 2} thin films on indium zinc oxide: Band offsets measurements

Energy Technology Data Exchange (ETDEWEB)

Craciun, D.; Craciun, V., E-mail: valentin.craciun@inflpr.ro

2017-04-01

Highlights: • High quality amorphous IZO and HfO{sub 2} films were obtained by PLD technique. • XPS measurements were used to obtain the valence band alignment in HfO{sub 2}/IZO heterostructure. • A valence band offset (ΔE{sub V}) of 1.75 eV was obtained for the HfO{sub 2}/IZO heterostructure. • A conduction band offset (ΔE{sub C}) of 0.65 eV was estimated for the HfO{sub 2}/IZO heterostructure. - Abstract: One of the most used dielectric films for amorphous indium zinc oxide (IZO) based thin films transistor is HfO{sub 2}. The estimation of the valence band discontinuity (ΔE{sub V}) of HfO{sub 2}/IZO heterostructure grown using the pulsed laser deposition technique, with In/(In + Zn) = 0.79, was obtained from X-ray photoelectron spectroscopy (XPS) measurements. The binding energies of Hf 4d5, Zn 2p3 and In 3d5 core levels and valence band maxima were measured for thick pure films and for a very thin HfO{sub 2} film deposited on a thick IZO film. A value of ΔE{sub V} = 1.75 ± 0.05 eV was estimated for the heterostructure. Taking into account the measured HfO{sub 2} and IZO optical bandgap values of 5.50 eV and 3.10 eV, respectively, a conduction band offset ΔE{sub C} = 0.65 ± 0.05 eV in HfO{sub 2}/IZO heterostructure was then obtained.

The role of engineered materials in superconducting tunnel junction X-ray detectors - Suppression of quasiparticle recombination losses via a phononic band gap

Science.gov (United States)

Rippert, Edward D.; Ketterson, John B.; Chen, Jun; Song, Shenian; Lomatch, Susanne; Maglic, Stevan R.; Thomas, Christopher; Cheida, M. A.; Ulmer, Melville P.

1992-01-01

An engineered structure is proposed that can alleviate quasi-particle recombination losses via the existence of a phononic band gap that overlaps the 2-Delta energy of phonons produced during recombination of quasi-particles. Attention is given to a 1D Kronig-Penny model for phonons normally incident to the layers of a multilayered superconducting tunnel junction as an idealized example. A device with a high density of Bragg resonances is identified as desirable; both Nb/Si and NbN/SiN superlattices have been produced, with the latter having generally superior performance.

Ellipsometry study of optical parameters of AgIn{sub 5}S{sub 8} crystals

Energy Technology Data Exchange (ETDEWEB)

Isik, Mehmet, E-mail: mehmet.isik@atilim.edu.tr [Department of Electrical and Electronics Engineering, Atilim University, 06836 Ankara (Turkey); Gasanly, Nizami [Department of Physics, Middle East Technical University, 06800 Ankara (Turkey); Virtual International Scientific Research Centre, Baku State University, 1148 Baku (Azerbaijan)

2015-12-01

AgIn{sub 5}S{sub 8} crystals grown by Bridgman method were characterized for optical properties by ellipsometry measurements. Spectral dependence of optical parameters; real and imaginary parts of the pseudodielectric function, pseudorefractive index, pseudoextinction coefficient, reflectivity and absorption coefficient were obtained from ellipsometry experiments carried out in the 1.2–6.2 eV range. Direct band gap energy of 1.84 eV was found from the analysis of absorption coefficient vs. photon energy. The oscillator energy, dispersion energy and zero-frequency refractive index, high-frequency dielectric constant values were found from the analysis of the experimental data using Wemple-DiDomenico and Spitzer-Fan models. Crystal structure and atomic composition ratio of the constituent elements in the AgIn{sub 5}S{sub 8} crystal were revealed from structural characterization techniques of X-ray diffraction and energy dispersive spectroscopy.

Electron-phonon interactions and the phonon anomaly in β-phase NiTi

International Nuclear Information System (INIS)

Zhao, G.L.; Harmon, B.N.

1993-01-01

The electronic structure of β-phase NiTi has been calculated using a first-principles linear-combination-of-atomic-orbitals method. The resulting band structure was fitted with a nonorthogonal tight-binding Hamiltonian from which electron-phonon matrix elements were evaluated. The soft phonon near Q 0 =(2/3, 2) / (3 ,0)π/a, which is responsible for the premartensitic phase transition in β-phase NiTi, is found to arise from the strong electron-phonon coupling of nested electronic states on the Fermi surface. Thermal vibrations and changes in electronic occupation cause a smearing of the nested features, which in turn cause a hardening of the phonon anomaly

Optical properties change in laser-induced Te/As{sub 2}Se{sub 3} chalcogenide thin films

Energy Technology Data Exchange (ETDEWEB)

Behera, Mukta; Naik, Ramakanta [Utkal University, Department of Physics, Bhubaneswar (India)

2016-10-15

In the present work, we report the change in optical parameters due to the deposition and photo-induced diffusion of Te layer into the chalcogenide As{sub 2}Se{sub 3} film. The photo-diffusion creates a solid solution of As-Se-Te which has potential application in optical devices. The Te/As{sub 2}Se{sub 3} bilayer films prepared by thermal evaporation technique were studied by various experimental techniques. The photo-diffusion of Te into As{sub 2}Se{sub 3} matrix was done by 532-nm laser irradiation. The structure of the As{sub 2}Se{sub 3}, as-prepared and irradiated Te/As{sub 2}Se{sub 3} films was studied by X-ray diffraction which were amorphous in nature. The presence of all the elements was checked by energy-dispersive X-ray analysis, and the optical transmission spectra were recorded by Fourier transform infrared spectrometer. The optical band gap is reduced by the deposition and diffusion of Te into As{sub 2}Se{sub 3} film which is due to the increase in density of defect states in the gap region. The transmission is decreased, whereas the absorption efficiency is increased with the increase in disorderness. The X-ray photoelectron spectroscopy carried out on these films gives information about the bonding change due to the photo-diffusion process. Therefore, this is an important result which will open up new directions for the application of this material in semiconducting devices. (orig.)

Electronic, elastic, and optical properties of monolayer BC{sub 2}N

Energy Technology Data Exchange (ETDEWEB)

Jiao, Lina; Hu, Meng; Peng, Yusi; Luo, Yanting; Li, Chunmei; Chen, Zhiqian, E-mail: chen_zq@swu.edu.cn

2016-12-15

The structural stability, electronic structure, elasticity, and optical properties of four types of monolayer BC{sub 2}N have been investigated from first principles using calculation based on density functional theory. The results show that the structural stability of BC{sub 2}N increases with the number of C–C and B–N bonds. By calculating the two-dimensional Young's modulus, shear modulus, Poisson's ratio, and shear anisotropic factors in different directions, four structures present various anisotropies and the most stable structure is almost isotropic. For C-type BC{sub 2}N, the values of two-dimensional Young's modulus, shear modulus, and bulk modulus (309, 128, 195 GPa m{sup −1}), are smaller than those of graphene (343, 151, 208) but bigger than those of h-BN (286, 185, 116). Furthermore, the dielectric function, refractive index, reflectivity, absorption coefficient, and energy loss spectrum are also calculated to investigate the mechanism underpinning the optical transitions in BC{sub 2}N, revealing monolayer BC{sub 2}N as a candidate window material. - Graphical abstract: Schematic diagram of BC{sub 2}N under the biaxial tensile strain. Changes in the valence-band top and the conduction-band bottom of BC{sub 2}N with increasing strain.

Phonon dispersion curves of fcc La

International Nuclear Information System (INIS)

Stassis, C.; Loong, C.; Zarestky, J.

1982-01-01

Large single crystals of fcc La were grown in situ and were used to study the lattice dynamics of this phase of La by coherent inelastic neutron scattering. The phonon dispersion curves have been measured along the [xi00], [xixi0], [xixixi], and [0xi1] symmetry directions at 660 and 1100 K. The T[xixixi] branch exhibits anomalous dispersion for xi>0.25 and, in addition, close to the zone boundary, the phonon frequencies of this branch decrease with decreasing temperature. This soft-mode behavior may be related to the #betta→α# transformation in La, an assumption supported by recent band-theoretical calculations of the generalized susceptibility of fcc La. At X the frequencies of the L[xi00] branch are considerably lower than those of the corresponding branch of #betta#-Ce; a similar but not as pronounced effect is observed for the frequencies of the L[xixixi] branch close to the point L. Since the calculated generalized susceptibility of fcc La exhibits strong peaks at X and L, these anomalies may be due to the renormalization of the phonon frequencies by virtual fbold-arrow-left-rightd transitions to the unoccupied 4f level in La. The data were used to evaluate the elastic constants, the phonon density of states, and the lattice specific heat at constant pressure C/sub P//sup

Optical properties of Zn{sub 1-x}Mg{sub x}Se epilayers studied by spectroscopy methods[thin films

Energy Technology Data Exchange (ETDEWEB)

Glowacki, G; Gapinski, A; Derkowska, B; Bala, W [Institute of Physics, N. Copernicus University, Torun (Poland); Sahraoui, B [Laboratoire des Proprietes Optiques des Materiaux et Applications (POMA), Universite d' Angeres, Angeres (France)

1998-07-01

Linear optical properties of Zn{sub 1-x}Mg{sub x}Se (0 {<=} x {<=} 0.4) alloys have been studied using reflectance, spectroscopic ellipsometry and photoluminescence measurements. The refractive indexes of Zn{sub 1-x}Mg{sub x}Se epilayers were investigated as a function of Mg composition (0 {<=} x {<=} 0.4). The energies of band gap E{sub g} and spin-orbit splitting E{sub g} + {delta}, have been determined. These energies are shifted gradually to higher values with increasing Mg content. (author)

Engineering dissipation with phononic spectral hole burning

Science.gov (United States)

Behunin, R. O.; Kharel, P.; Renninger, W. H.; Rakich, P. T.

2017-03-01

Optomechanics, nano-electromechanics, and integrated photonics have brought about a renaissance in phononic device physics and technology. Central to this advance are devices and materials supporting ultra-long-lived photonic and phononic excitations that enable novel regimes of classical and quantum dynamics based on tailorable photon-phonon coupling. Silica-based devices have been at the forefront of such innovations for their ability to support optical excitations persisting for nearly 1 billion cycles, and for their low optical nonlinearity. While acoustic phonon modes can persist for a similar number of cycles in crystalline solids at cryogenic temperatures, it has not been possible to achieve such performance in silica, as silica becomes acoustically opaque at low temperatures. We demonstrate that these intrinsic forms of phonon dissipation are greatly reduced (by >90%) by nonlinear saturation using continuous drive fields of disparate frequencies. The result is a form of steady-state phononic spectral hole burning that produces a wideband transparency window with optically generated phonon fields of modest (nW) powers. We developed a simple model that explains both dissipative and dispersive changes produced by phononic saturation. Our studies, conducted in a microscale device, represent an important step towards engineerable phonon dynamics on demand and the use of glasses as low-loss phononic media.

Optical properties of the c-axis oriented LiNbO{sub 3} thin film

Energy Technology Data Exchange (ETDEWEB)

Shandilya, Swati; Sharma, Anjali [Department of Physics and Astrophysics, University of Delhi, Delhi-110007 (India); Tomar, Monika [Miranda House, University of Delhi, Delhi 110007 (India); Gupta, Vinay, E-mail: drguptavinay@gmail.com [Department of Physics and Astrophysics, University of Delhi, Delhi-110007 (India)

2012-01-01

C-axis oriented Lithium Niobate (LiNbO{sub 3}) thin films have been deposited onto epitaxially matched (001) sapphire substrate using pulsed laser deposition technique. Structural and optical properties of the thin films have been studied using the X-ray diffraction (XRD) and UV-Visible spectroscopy respectively. Raman spectroscopy has been used to study the optical phonon modes and defects in the c-axis oriented LiNbO{sub 3} thin films. XRD analysis indicates the presence of stress in the as-grown LiNbO{sub 3} thin films and is attributed to the small lattice mismatch between LiNbO{sub 3} and sapphire. Refractive index (n = 2.13 at 640 nm) of the (006) LiNbO{sub 3} thin films was found to be slightly lower from the corresponding bulk value (n = 2.28). Various factors responsible for the deviation in the refractive index of (006) LiNbO{sub 3} thin films from the corresponding bulk value are discussed and the deviation is mainly attributed to the lattice contraction due to the presence of stress in deposited film.

Exploration on anion ordering, optical properties and electronic structure in K{sub 3}WO{sub 3}F{sub 3} elpasolite

Energy Technology Data Exchange (ETDEWEB)

Atuchin, V.V. [Laboratory of Optical Materials and Structures, Institute of Semiconductor Physics, SB RAS, Novosibirsk 630090 (Russian Federation); Isaenko, L.I. [Laboratory of Crystal Growth, Institute of Geology and Mineralogy, SB RAS, Novosibirsk 630090 (Russian Federation); Kesler, V.G. [Laboratory of Physical Principles for Integrated Microelectronics, Institute of Semiconductor Physics, Novosibirsk 630090 (Russian Federation); Lin, Z.S., E-mail: zslin@mail.ipc.ac.cn [Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, P.O. Box 2711, Beijing 100190 (China); Molokeev, M.S. [Laboratory of Crystal Physics, Institute of Physics, SB RAS, Krasnoyarsk 660036 (Russian Federation); Yelisseyev, A.P.; Zhurkov, S.A. [Laboratory of Crystal Growth, Institute of Geology and Mineralogy, SB RAS, Novosibirsk 630090 (Russian Federation)

2012-03-15

Room-temperature modification of potassium oxyfluorotungstate, G2-K{sub 3}WO{sub 3}F{sub 3}, has been prepared by low-temperature chemical route and single crystal growth. Wide optical transparency range of 0.3-9.4 {mu}m and forbidden band gap E{sub g}=4.32 eV have been obtained for G2-K{sub 3}WO{sub 3}F{sub 3} crystal. Meanwhile, its electronic structure has been calculated with the first-principles calculations. The good agreement between the theorectical and experimental results have been achieved. Furthermore, G2-K{sub 3}WO{sub 3}F{sub 3} is predicted to possess the relatively large nonlinear optical coefficients. - Graphical abstract: Using the cm-size K{sub 3}WO{sub 3}F{sub 3} crystal (left upper), the transmission spectrum (right upper) and XPS valence electronic states (left lower) were measured, agreed with the ab initio results (right lower). Highlights: Black-Right-Pointing-Pointer The cm-size G2-K{sub 3}WO{sub 3}F{sub 3} single crystals are obtained. Black-Right-Pointing-Pointer Optical absorption edge and transmission range are defined for G2-K{sub 3}WO{sub 3}F{sub 3} crystal. Black-Right-Pointing-Pointer Crystal structures of all known K{sub 3}WO{sub 3}F{sub 3} polymorph modifications are determined. Black-Right-Pointing-Pointer Experimental electronic structure is consistent with the first-principles result. Black-Right-Pointing-Pointer G2-K{sub 3}WO{sub 3}F{sub 3} is predicted as a crystal with large NLO coefficients.

A first principle study for the comparison of phonon dispersion of armchair carbon and silicon nanotubes

International Nuclear Information System (INIS)

Chandel, Surjeet Kumar; Kumar, Arun; Bharti, Ankush; Sharma, Raman

2015-01-01

Using first principles density functional theoretical calculations, the present paper reports a systematic study of phonon dispersion curves in pristine carbon (CNT) and silicon nanotubes (SiNT) having chirality (6,6) in the armchair configuration. Some of the phonon modes are found to have negative frequencies which leads to instability of the systems under study. The number of phonon branches has been found to be thrice as much as the number of atoms. The frequency of the higher optical bands varies from 1690 to 1957 cm −1 for CNT(6,6) while it is 596 to 658 cm −1 for SiNT

Electronic and optical properties of AgAlO{sub 2}: A first-principles study

Energy Technology Data Exchange (ETDEWEB)

Bhamu, K.C., E-mail: kcbhamu85@gmail.com; Priolkar, K.R.

2017-04-01

In this paper, we present electronic and optical properties of silver-based delafossite compound AgAlO{sub 2} (AAO). For the electronic properties, we have computed band structure and density of states. The origin of band structure is elucidated in terms of density of states. A significant contribution in band structure comes from Ag-4d and O-2p states around the Fermi level. The estimated band gap shows the indirect semiconducting nature of AAO having the band gap value of 2.34 eV. For the optical properties, we have calculated frequency dependent dielectric functions. The peaks in the imaginary component of dielectric function are explained by electronic transitions in the dispersion relation. Our computed results are in agreement with those available in the literature. The wide band gap and hence transparency for the UV and visible incident light photons makes AAO a precious material for transparent electronics. - Highlights: • Applied different-different types of exchange-correlations and potentials. • Becke–Johnson with Hubbard potential (BJ + U) is better for 2H-AgAlO{sub 2}. • Band gap is in reasonable agreement with experimentally reported. • Origin of energy bands is elucidated in terms of density of states. • 2H-AgAlO{sub 2} is a promising candidate for transparent electronics.

Synthesis and optical properties of BC{sub x}N{sub y} films deposited from N-triethylborazine and hydrogen mixture

Energy Technology Data Exchange (ETDEWEB)

Sulyaeva, Veronica S., E-mail: veronica@niic.nsc.ru [Department of Functional Materials Chemistry, Nikolaev Institute of Inorganic Chemistry, SB RAS, 630090 Novosibirsk (Russian Federation); Rumyantsev, Yurii M. [Department of Functional Materials Chemistry, Nikolaev Institute of Inorganic Chemistry, SB RAS, 630090 Novosibirsk (Russian Federation); Kesler, Valerii G. [Laboratory of Physical Principles for Integrated Microelectronics, Rzhanov Institute of Semiconductor Physics, SB RAS, 630090 Novosibirsk (Russian Federation); Kosinova, Marina L. [Department of Functional Materials Chemistry, Nikolaev Institute of Inorganic Chemistry, SB RAS, 630090 Novosibirsk (Russian Federation)

2015-04-30

BC{sub x}N{sub y} films were obtained by plasma enhanced chemical vapor deposition method using a single-source precursor N-triethylborazine and hydrogen as plasma activating gas. The effect of synthesis temperature on the chemical composition and properties of the BC{sub x}N{sub y} films was investigated. The BC{sub x}N{sub y} films were examined by scanning electron microscopy, Fourier transform infrared and Raman spectroscopy, X-ray energy dispersive spectroscopy, X-ray photoelectron spectroscopy, and ellipsometry and spectrophotometry techniques. These experimental results indicated that the BC{sub x}N{sub y} films produced at low temperatures (T{sub dep} ≤ 673 K) are the polymer-like hydrogenated films with high transparency up to 93% in the visible part of the spectrum. BC{sub x}N{sub y} films produced at high temperatures (> 673 K) contain additional phase of disordered carbon which has dramatically reduce transparency. The band gap of the films varied from 0.6 to 4.5 eV, with variation in deposition temperature. - Highlights: • Thin BC{sub x}N{sub y} films have been obtained by plasma enhanced chemical vapor deposition. • N-triethylborazine was used as a precursor. • Low temperature BC{sub x}N{sub y} films were found to be high optical transparent layers (93%). • Optical band gap of the BC{sub x}N{sub y} layers varied from 0.6 to 4.5 eV.

Study of the aqueous synthesis, optical and electrochemical characterization of alloyed Zn{sub x}Cd{sub 1-x}Te nanocrystals

Energy Technology Data Exchange (ETDEWEB)

Matos, Charlene Regina Santos [Postgraduate Program in Materials Science and Engineering, Federal University of Sergipe, São Cristóvão, SE (Brazil); Candido, Luan P.M.; Souza, Helio Oliveira [Department of Chemistry, Federal University of Sergipe, São Cristóvão, SE (Brazil); Pereira da Costa, Luiz [Institute of Technology and Research (ITP), Tiradentes University, Aracaju, SE (Brazil); Sussuchi, Eliana Midori [Department of Chemistry, Federal University of Sergipe, São Cristóvão, SE (Brazil); Gimenez, Iara F., E-mail: gimenez@ufs.br [Postgraduate Program in Materials Science and Engineering, Federal University of Sergipe, São Cristóvão, SE (Brazil); Department of Chemistry, Federal University of Sergipe, São Cristóvão, SE (Brazil); Postgraduate Program in Chemistry, Federal University of Sergipe, São Cristóvão, SE (Brazil)

2016-08-01

The effects of experimental factors such as initial reaction pH, capping ligand, and heating method on the optical and electrochemical properties of aqueous alloyed Zn{sub x}Cd{sub 1-x}Te nanocrystals were evaluated. Here the type of capping ligand (glutathione GSH and 3-mercaptopropionic acid MPA) was found to be the most significant factor in controlling the range of photoluminescence emission. Also a pronounced pH effect on the emission wavelength has been verified in the presence of GSH, in contrast to MPA for which only a minor pH effect was observed. The heating method (microwave or hydrothermal) was found to be irrelevant for the emission wavelength at the conditions studied. The electrochemical characterization in aqueous medium (cyclic voltammetry and differential pulse voltammetry) evidenced a good correlation between electrochemical and optical band gap values and allowed estimation of band edge positions. - Highlights: • ZnCdTe quantum dots were obtained by aqueous synthesis. • Nature of capping ligand was the most relevant factor. • Optical and electrochemical band gaps were well correlated.

Magnetic, ferroelectric, and spin phonon coupling studies of Sr{sub 3}Co{sub 2}Fe{sub 24}O{sub 41} multiferroic Z-type hexaferrite

Energy Technology Data Exchange (ETDEWEB)

Raju, N.; Shravan Kumar Reddy, S.; Ramesh, J.; Gopal Reddy, Ch.; Yadagiri Reddy, P., E-mail: yadagirireddy@yahoo.com; Rama Reddy, K. [Department of Physics, Osmania University, Hyderabad-500007 (India); Sathe, V. G.; Raghavendra Reddy, V. [UGC-DAE Consortium for Scientific Research, University Campus, Khandwa Road, Indore-452001 (India)

2016-08-07

The magnetic, Raman, ferroelectric, and in-field {sup 57}Fe Mössbauer studies of polycrystalline multiferroic Sr{sub 3}Co{sub 2}Fe{sub 24}O{sub 41} are reported in this paper. From the magnetization studies, it is observed that the sample is soft magnetic in nature with low temperature magnetic spin transitions like longitudinal to transverse conical structure around 130 K and change in magnetic crystalline anisotropy from conical to planar structure at 250 K. Ferroelectric studies of the sample exhibit the spontaneous polarization at low temperature. Strong spin phonon and spin lattice coupling is observed through low temperature Raman spectroscopy. From the in-field {sup 57}Fe Mössbauer spectroscopy, spin up and spin down site occupations of Fe ions are calculated in the unit cell.

Phonon impact on optical control schemes of quantum dots: Role of quantum dot geometry and symmetry

Science.gov (United States)

Lüker, S.; Kuhn, T.; Reiter, D. E.

2017-12-01

Phonons strongly influence the optical control of semiconductor quantum dots. When modeling the electron-phonon interaction in several theoretical approaches, the quantum dot geometry is approximated by a spherical structure, though typical self-assembled quantum dots are strongly lens-shaped. By explicitly comparing simulations of a spherical and a lens-shaped dot using a well-established correlation expansion approach, we show that, indeed, lens-shaped dots can be exactly mapped to a spherical geometry when studying the phonon influence on the electronic system. We also give a recipe to reproduce spectral densities from more involved dots by rather simple spherical models. On the other hand, breaking the spherical symmetry has a pronounced impact on the spatiotemporal properties of the phonon dynamics. As an example we show that for a lens-shaped quantum dot, the phonon emission is strongly concentrated along the direction of the smallest axis of the dot, which is important for the use of phonons for the communication between different dots.

Optical properties of lattice matched In{sub x}Ga{sub 1-x}P{sub 1-y}N{sub y} heteroepitaxial layers on GaP

Energy Technology Data Exchange (ETDEWEB)

Imanishi, T.; Wakahara, A.; Kim, S.M.; Yonezu, H.; Furukawa, Y. [Department of Electrical and Electron Engineering, Toyohashi University of Technology, 1-1 Hibarigaoka, Tempaku-cho, Toyohashi, Aichi 411-8580 (Japan)

2005-04-01

Optical constants and band structure of In{sub x}Ga{sub 1-x}P{sub 1-y}N{sub y} lattice matched to GaP (100) substrate are investigated. Nitrogen concentration in the film estimated by X-ray diffraction and X-ray photoelectron spectroscopy, was 1.4%, 1.8% and 3.5%. Refractive index and transition critical points E{sub 0} ({gamma}{sub v} to {gamma}{sub c}), E{sub 1} (L{sub v} to L{sub c}) and E{sub 2} (X{sub v} to X{sub c}) are evaluated by spectroscopic ellipsometry. When N composition increases from 1.4% to 3.5%, both photoluminescence (PL) peak energy, E{sub PL}, and E{sub 0} shift to lower energy, and the energy difference {delta}E=E{sub 0}-E{sub PL} decrease from 380 meV to 110 meV. The large red-sift of E{sub PL} from the E{sub 0} suggest that the luminescence is of defect-related luminescence, and crossover point of indirect band structure estimated by the extrapolation of N-composition dependence of {delta}E is estimated to be around in In{sub 0.1}Ga{sub 0.9}P{sub 0.96}N{sub 0.04}. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Synthesis, structure and optical properties of single-crystalline In{sub 2}O{sub 3} nanowires

Energy Technology Data Exchange (ETDEWEB)

Hadia, N.M.A., E-mail: nomery_abass@yahoo.com [Physics Department, Faculty of Science, Sohag University, 82524 Sohag (Egypt); Mohamed, H.A. [Physics Department, Faculty of Science, Sohag University, 82524 Sohag (Egypt); King Saud University, Teachers College, Science Department (Physics), 11148 Riyadh (Saudi Arabia)

2013-01-15

Highlights: Black-Right-Pointing-Pointer Metal and metal oxide one dimensional (1D) nanostructured materials are of crucial importance. Black-Right-Pointing-Pointer The paper deals with the synthesis of In{sub 2}O{sub 3} nanowires without the use of catalysts. Black-Right-Pointing-Pointer The optical constants and Photoluminescence (PL) of In{sub 2}O{sub 3} nanowires were evaluated. - Abstract: Indium oxide In{sub 2}O{sub 3} nanowires have been recently synthesized revealing interesting properties and used in various applications. In order to reduce as much as possible the influence of undesired dopants and/or impurities on the observed properties, In{sub 2}O{sub 3} nanowires have been grown without the use of catalysts, directly from metallic indium by a vapor transport technique and a controlled oxidation with oxygen-argon mixtures. Depending on the growth conditions (temperature, vapor pressure, oxygen concentration, etc.) different results have been achieved and it has been observed that a 'proper' In condensation on the substrates may enhance the nanowires growth. Detailed structural analysis showed that the In{sub 2}O{sub 3} nanostructures are single crystalline with a cubic crystal structure. The grown In{sub 2}O{sub 3} nanowires were optically characterized in order to evaluate the absorption coefficient, optical band gap, refractive index and extinction coefficient. Room temperature Photoluminescence (PL) spectrum showed broad and intense blue emission at 375 nm.

Spectral tuning via multi-phonon-assisted stokes and anti-stokes excitations in LaF{sub 3}: Tm{sup 3+} nanoparticles

Energy Technology Data Exchange (ETDEWEB)

Gao, Dangli, E-mail: gaodangli@163.com [School of Materials & Mineral Resources, Xi' an University of Architecture and Technology, Xi' an, Shaanxi 710055 (China); College of Science, Xi' an University of Architecture and Technology, Xi' an, Shaanxi 710055 (China); Shaanxi Key Laboratory of Nano Materials and Technology, Xi' an, Shaanxi 710055 (China); Tian, Dongping, E-mail: dptian@xauat.edu.cn [School of Materials & Mineral Resources, Xi' an University of Architecture and Technology, Xi' an, Shaanxi 710055 (China); College of Science, Xi' an University of Architecture and Technology, Xi' an, Shaanxi 710055 (China); Chong, Bo; Li, Long [College of Science, Xi' an University of Architecture and Technology, Xi' an, Shaanxi 710055 (China); Zhang, Xiangyu [College of Science, Chang' an University, Xi' an, Shaanxi 710064 (China)

2016-09-05

We present a facile and highly effective method to tailor upconversion (UC) emission from LaF{sub 3}: Tm{sup 3+} nanoparticles (NPs) by adjusting ambient temperature from 20 K to 400 K accompanied with the pulse laser excitation. Spectral tuning mechanism controlled by ambient temperature at pulse laser excitation is revealed, and a mechanism based on the modification on multi-phonon relaxation rates for the rapid population of intermediate level {sup 3}H{sub 4} and multi-phonon-assisted excited state absorption is proposed. Based on multi-phonon relaxation theory and time-resolved photoluminescence studies, it is reasonable that UC luminescence under short-pulse laser excitation mainly originates from the ions at/near the surface of NPs. These exciting findings in ambient temperature accompanied with the short-pulse excitation dependent UC selectivity offer a general approach to tailoring lanthanide related UC emissions, which will benefit multicolor displays and imaging. - Graphical abstract: An effective method to tailor upconversion from LaF{sub 3}: Tm{sup 3+} nanoparticles by adjusting ambient temperature accompanied with the short-pulse laser excitation is presented and the spectral tuning mechanism based the modification on multi-phonon relaxation rate and multi-phonon-assisted excited state absorption is also revealed. - Highlights: • The luminescence switching is controlled by temperature and pulse duration. • The mechanism based on the multi-phonon-assisted excitations is proposed. • Blue luminescence under short-pulse excitation originates from the surface ions. • Temperature has a big effect on luminescence color output.

Direct correlation of observed phonon anomalies and maxima in the generalized susceptibilities of transition metal carbides

International Nuclear Information System (INIS)

Gupta, M.J.; Freeman, A.B.

1976-01-01

The generalized susceptibility, chi(q), of both NbC and TaC determined from APW energy band calculations show large maxima to occur at precisely those q/sub max/ values at which soft phonon modes were observed by Smith. Maxima in chi(q) are predicted for other directions. The locus of these q/sub max/ values can be represented by a warped cube of dimension approximately 1.2(2π/a) in momentum space--in striking agreement with the soft mode surface proposed phenomenologically by Weber. In sharp contrast, the chi(q) calculated for both ZrC and HfC--for which no phonon anomalies have been observed--fall off in all symmetry directions away from the zone center. The phonon anomalies in the transition metal carbides are thus interpreted as due to an ''overscreening'' effect resulting from an anomalous increase of the response function of the conduction electrons

Optical properties of a new Bi{sub 38}Mo{sub 7}O{sub 78} semiconductor with fluorite-type δ-Bi{sub 2}O{sub 3} structure

Energy Technology Data Exchange (ETDEWEB)

Wang, Zuoshan; Bi, Shala; Wan, Yingpeng [State and Local Joint Engineering Laboratory for Novel Functional Polymeric Materials, College of Chemistry, Chemical Engineering and Materials Science, Soochow University, Suzhou 215123 (China); Huang, Pengjie [College of Textile and Clothing Engineering, Soochow University, Suzhou 215006 (China); Zheng, Min, E-mail: zhengmin@suda.edu.cn [College of Textile and Clothing Engineering, Soochow University, Suzhou 215006 (China)

2017-03-31

Highlights: • Bi{sub 38}Mo{sub 7}O{sub 78} semiconductor nanoparticles were synthesized by sol-gel method. • Bi{sub 38}Mo{sub 7}O{sub 78} keeps the structural characteristics of the patrimonial δ-Bi{sub 2}O{sub 3} structure. • Bi{sub 38}Mo{sub 7}O{sub 78} show an efficient optical absorption in visible light. • Photocatalytic property was markedly enhanced for Bi{sub 38}Mo{sub 7}O{sub 78} nanoparticles. • The mechanism of this photocatalysis system was proposed. - Abstract: Bi{sup 3+}-containing inorganic materials usually show rich optical and electronic properties due to the hybridization between 6s and 6p electronic components together with the lone pair in Bi{sup 3+} ions. In this work, a new semiconductor of bismuth molybdate Bi{sub 38}Mo{sub 7}O{sub 78} (19Bi{sub 2}O{sub 3}·7MoO{sub 3}) was synthesized by the sol-gel film coating and the following heat process. The samples developed into nanoparticles with average size of 40 nm. The phase formation was verified via the XRD Rietveld structural refinement. Orthorhombic Bi{sub 38}Mo{sub 7}O{sub 78} can be regarded to be derived from the cubic δ-phase Bi{sub 2}O{sub 3} structure. The microstructure was investigated by SEM, EDX, TEM, BET and XPS measurements. The UV-vis absorption spectra showed that the band gap of Bi{sub 38}Mo{sub 7}O{sub 78} (2.38 eV) was greatly narrowed in comparison with Bi{sub 2}O{sub 3} (2.6 eV). This enhances the efficient absorption of visible light. Meanwhile, the conduction band of is wider and shows more dispersion, which greatly benefits the mobility of the light-induced charges taking part in the photocatalytic reactions. Bi{sub 38}Mo{sub 7}O{sub 78} nanoparticles possess efficient activities on the photodegradation of methylene blue (MB) solutions under the excitation of visible-light. The photocatalysis activities and mechanisms were discussed on the crystal structure characteristics and the measurements such as photoluminescence, exciton lifetime and XPS results.