Elastic properties of sub-stoichiometric nitrogen ion implanted silicon

Energy Technology Data Exchange (ETDEWEB)

Sarmanova, M.F., E-mail: marina.sarmanova@iom-leipzig.de [Leibniz Institute of Surface Modification, D-04318 Leipzig (Germany); Karl, H. [University Augsburg, Institute of Physics, D-86135 Augsburg (Germany); Mändl, S.; Hirsch, D. [Leibniz Institute of Surface Modification, D-04318 Leipzig (Germany); Mayr, S.G.; Rauschenbach, B. [Leibniz Institute of Surface Modification, D-04318 Leipzig (Germany); University Leipzig, Institute for Experimental Physics II, D-04103 Leipzig (Germany)

2015-04-15

Elastic properties of sub-stoichiometric nitrogen implanted silicon were measured with nanometer-resolution using contact resonance atomic force microscopy (CR-AFM) as function of ion fluence and post-annealing conditions. The determined range of indentation moduli was between 100 and 180 GPa depending on the annealing duration and nitrogen content. The high indentation moduli can be explained by formation of Si–N bonds, as verified by X-ray photoelectron spectroscopy.

The fabrication of nitrogen detector porous silicon nanostructures

Science.gov (United States)

Husairi, F. S.; Othman, N.; Eswar, K. A.; Guliling, Muliyadi; Khusaimi, Z.; Rusop, M.; Abdullah, S.

2018-05-01

In this study the porous silicon nanostructure used as a the nitrogen detector was fabricated by using anodization method because of simple and easy to handle. This method using 20 mA/ cm2 of current density and the etching time is from 10 - 40 minutes. The properties of the porous silicon nanostructure analyzed using I-V testing (electrical properties) and photoluminescence spectroscopy. From the I-V testing, sample PsiE40 where the sensitivity is 25.4% is a sensitivity of PSiE40 at 10 seconds exposure time.

Chalcogen- and halogen-bonds involving SX2 (X = F, Cl, and Br) with formaldehyde.

Science.gov (United States)

Mo, Lixin; Zeng, Yanli; Li, Xiaoyan; Zhang, Xueying; Meng, Lingpeng

2016-07-01

The capacity of SX2 (X = F, Cl, and Br) to engage in different kinds of noncovalent bonds was investigated by ab initio calculations. SCl2 (SBr2) has two σ-holes upon extension of Cl (Br)-S bonds, and two σ-holes upon extension of S-Cl (Br) bonds. SF2 contains only two σ-holes upon extension of the F-S bond. Consequently, SCl2 and SBr2 form chalcogen and halogen bonds with the electron donor H2CO while SF2 forms only a chalcogen bond, i.e., no F···O halogen bond was found in the SF2:H2CO complex. The S···O chalcogen bond between SF2 and H2CO is the strongest, while the strongest halogen bond is Br···O between SBr2 and H2CO. The nature of these two types of noncovalent interaction was probed by a variety of methods, including molecular electrostatic potentials, QTAIM, energy decomposition, and electron density shift maps. Termolecular complexes X2S···H2CO···SX'2 (X = F, Cl, Br, and X' = Cl, Br) were constructed to study the interplay between chalcogen bonds and halogen bonds. All these complexes contained S···O and Cl (Br)···O bonds, with longer intermolecular distances, smaller values of electron density, and more positive three-body interaction energies, indicating negative cooperativity between the chalcogen bond and the halogen bond. In addition, for all complexes studied, interactions involving chalcogen bonds were more favorable than those involving halogen bonds. Graphical Abstract Molecular electrostatic potential and contour map of the Laplacian of the electron density in Cl2S···H2CO···SCl2 complex.

Dimensional and Compositional Change of 1D Chalcogen Nanostructures Leading to Tunable Localized Surface Plasmon Resonances.

Science.gov (United States)

Min, Yuho; Seo, Ho Jun; Choi, Jong-Jin; Hahn, Byung-Dong; Moon, Geon Dae

2018-05-31

As the oxygen family, chalcogen (Se, Te) nanostructures have been considered important elements for various practical fields and further exploited to constitute metal chalcogenides for each targeted application. Here we report a controlled synthesis of well-defined one-dimensional chalcogen nanostructures such as nanowries, nanorods, and nanotubes by controlling reduction reaction rate to fine-tune the dimension and composition of the products. Tunable optical properties (localized surface plasmon resonances) of these chalcogen nanostructures are observed depending on their morphological, dimensional, and compositional variation. © 2018 IOP Publishing Ltd.

Phase stability and lattice thermal conductivity reduction in CoSb{sub 3} skutterudites, doped with chalcogen atoms

Energy Technology Data Exchange (ETDEWEB)

Battabyal, M., E-mail: manjusha.battabyal@project.arci.res.in; Priyadarshini, B.; Gopalan, R. [International Advanced Research Centre for Powder Metallurgy and New Materials (ARCI), IIT M Research Park, Taramani, Chennai-600113 (India); Pradipkanti, L.; Satapathy, Dillip K. [Department of Physics, Indian Institute of Technology Madras, Chennai-600036 (India)

2016-07-15

We report a significant reduction in the lattice thermal conductivity of the CoSb{sub 3} skuttertudites, doped with chalcogen atoms. Te/Se chalcogen atoms doped CoSb{sub 3} skutterudite samples (Te{sub 0.1}Co{sub 4}Sb{sub 12}, Se{sub 0.1}Co{sub 4}Sb{sub 12}, Te{sub 0.05}Se{sub 0.05}Co{sub 4}Sb{sub 12}) are processed by ball milling and spark plasma sintering. X-ray diffraction data combined with energy dispersive X-ray spectra indicate the doping of Te/Se chalcogen atoms in the skutterudite. The temperature dependent X-ray diffraction confirms the stability of the Te/Se doped CoSb{sub 3} skutterudite phase and absence of any secondary phase in the temperature range starting from 300 K to 773 K. The Raman spectroscopy reveals that different chalcogen dopant atoms cause different resonant optical vibrational modes between the dopant atom and the host CoSb{sub 3} skutterudite lattice. These optical vibrational modes do scatter heat carrying acoustic phonons in a different spectral range. It was found that among the Te/Se chalcogen atoms, Te atoms alter the host CoSb{sub 3} skutterudite lattice vibrations to a larger extent than Se atoms, and can potentially scatter more Sb related acoustic phonons. The Debye model of lattice thermal conductivity confirms that the resonant phonon scattering has important contributions to the reduction of lattice thermal conductivity in CoSb{sub 3} skutterudites doped with Te/Se chalcogen atoms. Lattice thermal conductivity ∼ 0.9 W/mK at 773 K is achieved in Te{sub 0.1}Co{sub 4}Sb{sub 12} skutterudites, which is the lowest value reported so far in CoSb{sub 3} skutterudites, doped with single Te chalcogen atom.

Phase transformation during simultaneous chalcogenization of CuIn(S,Se){sub 2} thin films using metalorganic sources

Energy Technology Data Exchange (ETDEWEB)

Shoji, Ryuki; Kayama, Yoshiki; Sugiyama, Mutsumi [Department of Electrical Engineering, Faculty of Science and Technology, Tokyo University of Science, 2641 Yamazaki, Noda 278-8510 (Japan); Chichibu, Shigefusa F. [Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, 2-1-1 Katahira, Aoba, Sendai 980-8577 (Japan)

2017-06-15

Simultaneous chalcogenization of CuIn(S{sub y},Se{sub 1-y}){sub 2} (CISSe) thin films has been demonstrated using organometallic sources such as diethylselenide [(C{sub 2}H{sub 5}){sub 2}Se] and ditertiarybutylsulfide [(t-C{sub 4}H{sub 9}){sub 2}S] to obtain homogeneous CISSe pseudobinary alloys with controlled amounts of Se and S species. Low-temperature chalcogenization at 300 C resulted in the formation of Cu-SSe and In-SSe alloys diffused into the Cu{sub 11}In{sub 9} metallic precursor. On the other hand, high-temperature chalcogenization produced CISSe thin films without additional phases. The obtained results can be used for elucidating the mechanism of simultaneous chalcogenization and development of high-performance and cost-effective commercial applications. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Synthesizing photovoltaic thin films of high quality copper-zinc-tin alloy with at least one chalcogen species

Science.gov (United States)

Teeter, Glenn; Du, Hui; Young, Matthew

2013-08-06

A method for synthesizing a thin film of copper, zinc, tin, and a chalcogen species ("CZTCh" or "CZTSS") with well-controlled properties. The method includes depositing a thin film of precursor materials, e.g., approximately stoichiometric amounts of copper (Cu), zinc (Zn), tin (Sn), and a chalcogen species (Ch). The method then involves re-crystallizing and grain growth at higher temperatures, e.g., between about 725 and 925 degrees K, and annealing the precursor film at relatively lower temperatures, e.g., between 600 and 650 degrees K. The processing of the precursor film takes place in the presence of a quasi-equilibrium vapor, e.g., Sn and chalcogen species. The quasi-equilibrium vapor is used to maintain the precursor film in a quasi-equilibrium condition to reduce and even prevent decomposition of the CZTCh and is provided at a rate to balance desorption fluxes of Sn and chalcogens.

Walking Down the Chalcogenic Group of the Periodic Table: From Singlet to Triplet Organic Emitters.

Science.gov (United States)

Kremer, Adrian; Aurisicchio, Claudia; De Leo, Federica; Ventura, Barbara; Wouters, Johan; Armaroli, Nicola; Barbieri, Andrea; Bonifazi, Davide

2015-10-19

The synthesis, X-ray crystal structures, ground- and excited-state UV/Vis absorption spectra, and luminescence properties of chalcogen-doped organic emitters equipped on both extremities with benzoxa-, benzothia-, benzoselena- and benzotellurazole (1X and 2X ) moieties have been reported for the first time. The insertion of the four different chalcogen atoms within the same molecular skeleton enables the investigation of only the chalcogenic effect on the organisation and photophysical properties of the material. Detailed crystal-structure analyses provide evidence of similar packing for 2O -2Se , in which the benzoazoles are engaged in π-π stacking and, for the heavier atoms, in secondary X⋅⋅⋅X and X⋅⋅⋅N bonding interactions. Detailed computational analysis shows that the arrangement is essentially governed by the interplay of van der Waals and secondary bonding interactions. Progressive quenching of the fluorescence and concomitant onset of phosphorescence features with gradually shorter lifetimes are detected as the atomic weight of the chalcogen heteroatom increases, with the tellurium-doped derivatives exhibiting only emission from the lowest triplet excited state. Notably, the phosphorescence spectra of the selenium and tellurium derivatives can be recorded even at room temperature; this is a very rare finding for fully organic emitters. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Synergistic effect and mechanism of platinum catalyst and nitrogen-containing silane on the thermal stability of silicone rubber

International Nuclear Information System (INIS)

Chen, Wanjuan; Zeng, Xingrong; Lai, Xuejun; Li, Hongqiang; Fang, Weizhen; Liu, Tian

2016-01-01

Highlights: • Platinum (Pt) and nitrogen-containing silane (NS) were introduced into silicone rubber. • The thermal stability was improved by Pt/NS both under nitrogen and air atmosphere. • The TG-FTIR of evolved gases during degradation was performed. • The synergistic effect and mechanism of Pt and NS were proposed. - Abstract: Platinum (Pt) catalyst and nitrogen-containing silane (NS) were introduced to improve the thermal stability of silicone rubber. The effects of Pt and NS on thermal stability and degradation mechanism of silicone rubber were investigated by thermogravimetry (TG), thermogravimetry-Fourier transform infrared spectrometry (TG-FTIR), scanning electron microscope-energy dispersive X-ray spectroscopy (SEM-EDXS) and Fourier transform infrared spectrometry (FTIR). A significant synergism was found between Pt and NS for improving the thermal stability of silicone rubber. When 6.67 ppm of Pt and 1.4 phr of NS were introduced, the temperature of 10% and 20% weight loss under nitrogen atmosphere were respectively increased by 36 °C and 119 °C. Meanwhile, the residue weight at 900 °C was doubled to 68% in the presence of Pt/NS. The synergistic mechanism might be that the nitrogen atom coordinated with Pt and improved the catalytic efficiency of Pt. Additionally, NS preserved the catalytic activity of Pt under air atmosphere. Hence, Pt/NS efficiently catalyzed thermal crosslinking and suppressed degradation of silicone chains. Moreover, it revealed that the presence of Pt/NS protected silicone chains from oxidation. Thus, the unzipping depolymerization by silanol groups was reduced significantly.

Synergistic effect and mechanism of platinum catalyst and nitrogen-containing silane on the thermal stability of silicone rubber

Energy Technology Data Exchange (ETDEWEB)

Chen, Wanjuan; Zeng, Xingrong, E-mail: psxrzeng@gmail.com; Lai, Xuejun; Li, Hongqiang; Fang, Weizhen; Liu, Tian

2016-05-20

Highlights: • Platinum (Pt) and nitrogen-containing silane (NS) were introduced into silicone rubber. • The thermal stability was improved by Pt/NS both under nitrogen and air atmosphere. • The TG-FTIR of evolved gases during degradation was performed. • The synergistic effect and mechanism of Pt and NS were proposed. - Abstract: Platinum (Pt) catalyst and nitrogen-containing silane (NS) were introduced to improve the thermal stability of silicone rubber. The effects of Pt and NS on thermal stability and degradation mechanism of silicone rubber were investigated by thermogravimetry (TG), thermogravimetry-Fourier transform infrared spectrometry (TG-FTIR), scanning electron microscope-energy dispersive X-ray spectroscopy (SEM-EDXS) and Fourier transform infrared spectrometry (FTIR). A significant synergism was found between Pt and NS for improving the thermal stability of silicone rubber. When 6.67 ppm of Pt and 1.4 phr of NS were introduced, the temperature of 10% and 20% weight loss under nitrogen atmosphere were respectively increased by 36 °C and 119 °C. Meanwhile, the residue weight at 900 °C was doubled to 68% in the presence of Pt/NS. The synergistic mechanism might be that the nitrogen atom coordinated with Pt and improved the catalytic efficiency of Pt. Additionally, NS preserved the catalytic activity of Pt under air atmosphere. Hence, Pt/NS efficiently catalyzed thermal crosslinking and suppressed degradation of silicone chains. Moreover, it revealed that the presence of Pt/NS protected silicone chains from oxidation. Thus, the unzipping depolymerization by silanol groups was reduced significantly.

Unusually short chalcogen bonds involving organoselenium: insights into the Se-N bond cleavage mechanism of the antioxidant ebselen and analogues.

Science.gov (United States)

Thomas, Sajesh P; Satheeshkumar, K; Mugesh, Govindasamy; Guru Row, T N

2015-04-27

Structural studies on the polymorphs of the organoselenium antioxidant ebselen and its derivative show the potential of organic selenium to form unusually short Se⋅⋅⋅O chalcogen bonds that lead to conserved supramolecular recognition units. Se⋅⋅⋅O interactions observed in these polymorphs are the shortest such chalcogen bonds known for organoselenium compounds. The FTIR spectral evolution characteristics of this interaction from solution state to solid crystalline state further validates the robustness of this class of supramolecular recognition units. The strength and electronic nature of the Se⋅⋅⋅O chalcogen bonds were explored using high-resolution X-ray charge density analysis and atons-in-molecules (AIM) theoretical analysis. A charge density study unravels the strong electrostatic nature of Se⋅⋅⋅O chalcogen bonding and soft-metal-like behavior of organoselenium. An analysis of the charge density around Se-N and Se-C covalent bonds in conjunction with the Se⋅⋅⋅O chalcogen bonding modes in ebselen and its analogues provides insights into the mechanism of drug action in this class of organoselenium antioxidants. The potential role of the intermolecular Se⋅⋅⋅O chalcogen bonding in forming the intermediate supramolecular assembly that leads to the bond cleavage mechanism has been proposed in terms of electron density topological parameters in a series of molecular complexes of ebselen with reactive oxygen species (ROS). © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Discovering protein-ligand chalcogen bonding in the protein data bank using endocyclic sulfur-containing heterocycles as ligand search subsets.

Science.gov (United States)

Mitchell, Miguel O

2017-09-24

The chalcogen bond, the noncovalent, electrostatic attraction between covalently bonded atoms in group 16 and Lewis bases, is present in protein-ligand interactions based on X-ray structures deposited in the Protein Data Bank (PDB). Discovering protein-ligand chalcogen bonding in the PDB employed a strategy that focused on searching the database for protein complexes of five-membered, heterocyclic ligands containing endocyclic sulfur with endo electron-withdrawing groups (isothiazoles; thiazoles; 1,2,3-, 1,2.4-, 1,2,5-, 1,3,4-thiadiazoles) and thiophenes with exo electron-withdrawing groups, e.g., 2-chloro, 2-bromo, 2-amino, 2-alkylthio. Out of 930 ligands investigated, 33 or 3.5% have protein-ligand S---O interactions of which 31 are chalcogen bonds and two appear to be S---HO hydrogen bonds. The bond angles for some of the chalcogen bonds found in the PDB are less than 90°, and an electrostatic model is proposed to explain this phenomenon.

Intermolecular and very strong intramolecular C-SeO/N chalcogen bonds in nitrophenyl selenocyanate crystals.

Science.gov (United States)

Wang, Hui; Liu, Ju; Wang, Weizhou

2018-02-14

Single-crystal X-ray diffraction reveals that polymorphic ortho-nitrophenyl selenocyanate (o-NSC, crystals 1a and 1b) and monomorphic para-nitrophenyl selenocyanate (p-NSC, crystal 2) crystals are all stabilized mainly by intermolecular and very strong intramolecular C-SeO/N chalcogen bonds, as well as by other different interactions. Thermogravimetric (TG) and differential scanning calorimetry thermogram (DSC) analyses show that the starting decomposition temperatures and melting points of the three crystals are different, following the order 1b > 1a > 2, which is consistent with the structural characteristics of the crystals. In addition, atoms in molecules (AIM) and natural bond orbital (NBO) analyses indicate that the total strengths of the C-SeO and C-SeN chalcogen bonds decrease in the order 1b > 1a > 2. This study could be significant for engineering functional crystals based on robust C-SeO and C-SeN chalcogen bonds, and for designing drugs containing selenium as well as understanding their interaction in biosystems.

Distribution of species and Ga–N bonds in silicon co-implanted with gallium and nitrogen ions

International Nuclear Information System (INIS)

Surodin, S. I.; Nikolitchev, D. E.; Kryukov, R. N.; Belov, A. I.; Korolev, D. S.; Mikhaylov, A. N.; Tetelbaum, D. I.

2016-01-01

The concentration profiles of species in silicon subjected to gallium and nitrogen co-implantation and subsequent annealing have been investigated by the method of X-ray photoelectron spectroscopy combined with the layer-by-layer ion etching of the implanted layer. It is shown that practically entire implanted gallium undergoes out-diffusion, but the preliminary implantation of nitrogen for the synthesis of a barrier SiN_x layer makes it possible to avoid the essential loss of gallium. In this case, about 14 % of implanted gallium bond to nitrogen. The obtained data are discussed from the viewpoint of the possibility of ion synthesis of GaN inclusions in silicon matrix.

Distribution of species and Ga–N bonds in silicon co-implanted with gallium and nitrogen ions

Energy Technology Data Exchange (ETDEWEB)

Surodin, S. I., E-mail: surodin.bsn@mail.ru; Nikolitchev, D. E.; Kryukov, R. N.; Belov, A. I.; Korolev, D. S.; Mikhaylov, A. N.; Tetelbaum, D. I., E-mail: tetelbaum@phys.unn.ru [Lobachevsky University, 23 Prospekt Gagarina, Nizhny Novgorod, 603950 (Russian Federation)

2016-06-17

The concentration profiles of species in silicon subjected to gallium and nitrogen co-implantation and subsequent annealing have been investigated by the method of X-ray photoelectron spectroscopy combined with the layer-by-layer ion etching of the implanted layer. It is shown that practically entire implanted gallium undergoes out-diffusion, but the preliminary implantation of nitrogen for the synthesis of a barrier SiN{sub x} layer makes it possible to avoid the essential loss of gallium. In this case, about 14 % of implanted gallium bond to nitrogen. The obtained data are discussed from the viewpoint of the possibility of ion synthesis of GaN inclusions in silicon matrix.

Chalcogen-containing oxazolines in the palladium-catalyzed asymmetric allylic alkylation

Directory of Open Access Journals (Sweden)

Braga Antonio L.

2006-01-01

Full Text Available A comparative study about the ability of chiral chalcogen-containing oxazolines to act as chiral ligands in the palladium-catalyzed allylic alkylation of rac-1,3-diphenyl-2-propenyl acetate with dimethyl malonate is reported. Differences in the catalytic performance are observed with sulfur, selenium and tellurium analogues.

Potential energy landscapes of elemental and heterogeneous chalcogen clusters

International Nuclear Information System (INIS)

Mauro, John C.; Loucks, Roger J.; Balakrishnan, Jitendra; Varshneya, Arun K.

2006-01-01

We describe the potential energy landscapes of elemental S 8 , Se 8 , and Te 8 clusters using disconnectivity graphs. Inherent structures include both ring and chain configurations, with rings especially dominant in Se 8 . We also map the potential energy landscapes of heterogeneous Se n (S,Te) 8-n clusters, which offer insights into the structure of heterogeneous chalcogen glasses

Learning nitrogen-vacancy electron spin dynamics on a silicon quantum photonic simulator

NARCIS (Netherlands)

Wang, J.; Paesani, S.; Santagati, R.; Knauer, S.; Gentile, A. A.; Wiebe, N.; Petruzzella, M.; Laing, A.; Rarity, J. G.; O'Brien, J. L.; Thompson, M. G.

2017-01-01

We present the experimental demonstration of quantum Hamiltonian learning. Using an integrated silicon-photonics quantum simulator with the classical machine learning technique, we successfully learn the Hamiltonian dynamics of a diamond nitrogen-vacancy center's electron ground-state spin.

Determination of carbon and nitrogen in silicon and germanium

International Nuclear Information System (INIS)

Gebauhr, W.; Martin, J.

1975-01-01

The essential aim of this study is to examine the various technical and economic problems encountered in the determination of carbon and nitrogen in silicon and germanium, for this is in a way an extension of the discussion concerning the presence of oxygen in these two elements. The greater part of the study is aimed at drawing up a catalogue of the methods of analysis used and of the results obtained so far

Study of Nitrogen Effect on the Boron Diffusion during Heat Treatment in Polycrystalline Silicon/Nitrogen-Doped Silicon Thin Films

Science.gov (United States)

Saci, Lynda; Mahamdi, Ramdane; Mansour, Farida; Boucher, Jonathan; Collet, Maéva; Bedel Pereira, Eléna; Temple-Boyer, Pierre

2011-05-01

The present paper studies the boron (B) diffusion in nitrogen (N) doped amorphous silicon (a-Si) layer in original bi-layer B-doped polycrystalline silicon (poly-Si)/in-situ N-doped Si layers (NIDOS) thin films deposited by low pressure chemical vapor deposition (LPCVD) technique. The B diffusion in the NIDOS layer was investigated by secondary ion mass spectrometry (SIMS) and Fourier transform infrared spectroscopy (FTIR) analysis. A new extended diffusion model is proposed to fit the SIMS profile of the bi-layer films. This model introduces new terms which take into account the effect of N concentration on the complex diffusion phenomena of B atoms in bi-layer films. SIMS results show that B diffusion does not exceed one third of NIDOS layer thickness after annealing. The reduction of the B diffusion in the NIDOS layer is due to the formation of complex B-N as shown by infrared absorption measurements. Electrical measurements using four-probe and Hall effect techniques show the good conductivity of the B-doped poly-Si layer after annealing treatment.

Etch-stop behavior of buried layers formed by substoichiometric nitrogen ion implantation into silicon

International Nuclear Information System (INIS)

Perez-Rodriguez, A.; Romano-Rodriguez, A.; Morante, J.R.; Acero, M.C. Esteve, J.; Montserrat, J.; El-Hassani, A.

1996-01-01

In this work the etch-stop behavior of buried layers formed by substoichiometric nitrogen ion implantation into silicon is studied as a function of the processing parameters, the implantation dose and temperature, and the presence of capping layers during implantation. Etching characteristics have been probed using tetramethylammonium hydroxide or KOH solutions for different times up to 6 h. Results show that, after annealing, the minimum dose required for the formation of an efficient etch-stop layer is about 4 x 10 17 cm -2 , for an implantation energy of 75 keV. This is defined as a layer with an efficient etch selectivity in relation to Si of s ≥ 100. For larger implantation doses efficient etch selectivities larger than 100 are obtained. However, for these doses a considerable density of pits is observed in the etch-stop layer. These are related to the presence of nitrogen poor Si regions in the buried layer after annealing, due to a partial separation of silicon and silicon nitride phases during the annealing process. The influence of this separation of phases as well as nitrogen gettering in the buried layer on the etch-stop behavior is discussed as a function of the processing parameters

Complex boron redistribution kinetics in strongly doped polycrystalline-silicon/nitrogen-doped-silicon thin bi-layers

Energy Technology Data Exchange (ETDEWEB)

Abadli, S. [Department of Electrical Engineering, University Aout 1955, Skikda, 21000 (Algeria); LEMEAMED, Department of Electronics, University Mentouri, Constantine, 25000 (Algeria); Mansour, F. [LEMEAMED, Department of Electronics, University Mentouri, Constantine, 25000 (Algeria); Pereira, E. Bedel [CNRS-LAAS, 7 avenue du colonel Roche, 31077 Toulouse (France)

2012-10-15

We have investigated the complex behaviour of boron (B) redistribution process via silicon thin bi-layers interface. It concerns the instantaneous kinetics of B transfer, trapping, clustering and segregation during the thermal B activation annealing. The used silicon bi-layers have been obtained by low pressure chemical vapor deposition (LPCVD) method at 480 C, by using in-situ nitrogen-doped-silicon (NiDoS) layer and strongly B doped polycrystalline-silicon (P{sup +}) layer. To avoid long-range B redistributions, thermal annealing was carried out at relatively low-temperatures (600 C and 700 C) for various times ranging between 30 min and 2 h. To investigate the experimental secondary ion mass spectroscopy (SIMS) doping profiles, a redistribution model well adapted to the particular structure of two thin layers and to the effects of strong-concentrations has been established. The good adjustment of the simulated profiles with the experimental SIMS profiles allowed a fundamental understanding about the instantaneous physical phenomena giving and disturbing the complex B redistribution profiles-shoulders. The increasing kinetics of the B peak concentration near the bi-layers interface is well reproduced by the established model. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

A review of flexible lithium-sulfur and analogous alkali metal-chalcogen rechargeable batteries.

Science.gov (United States)

Peng, Hong-Jie; Huang, Jia-Qi; Zhang, Qiang

2017-08-29

Flexible energy storage systems are imperative for emerging flexible devices that are revolutionizing our life. Lithium-ion batteries, the current main power sources, are gradually approaching their theoretical limitation in terms of energy density. Therefore, alternative battery chemistries are urgently required for next-generation flexible power sources with high energy densities, low cost, and inherent safety. Flexible lithium-sulfur (Li-S) batteries and analogous flexible alkali metal-chalcogen batteries are of paramount interest owing to their high energy densities endowed by multielectron chemistry. In this review, we summarized the recent progress of flexible Li-S and analogous batteries. A brief introduction to flexible energy storage systems and general Li-S batteries has been provided first. Progress in flexible materials for flexible Li-S batteries are reviewed subsequently, with a detailed classification of flexible sulfur cathodes as those based on carbonaceous (e.g., carbon nanotubes, graphene, and carbonized polymers) and composite (polymers and inorganics) materials and an overview of flexible lithium anodes and flexible solid-state electrolytes. Advancements in other flexible alkali metal-chalcogen batteries are then introduced. In the next part, we emphasize the importance of cell packaging and flexibility evaluation, and two special flexible battery prototypes of foldable and cable-type Li-S batteries are highlighted. In the end, existing challenges and future development of flexible Li-S and analogous alkali metal-chalcogen batteries are summarized and prospected.

Nitrogen fertilization affects silicon concentration, cell wall composition and biofuel potential of wheat straw

DEFF Research Database (Denmark)

Murozuka, Emiko; Laursen, Kristian Holst; Lindedam, Jane

2014-01-01

Nitrogen is an essential input factor required for plant growth and biomass production. However, very limited information is available on how nitrogen fertilization affects the quality of crop residues to be used as lignocellulosic feedstock. In the present study, straw of winter wheat plants grown...... linearly from 0.32% to 0.71% over the range of nitrogen treatments. Cellulose and hemicellulose were not affected by the nitrogen supply while lignin peaked at medium rates of nitrogen application. The nitrogen treatments had a distinct influence on the silicon concentration, which decreased from 2.5% to 1.......5% of the straw dry matter when the nitrogen supply increased from 48 to 192kgha-1. No further decline in Si occurred at higher rates of nitrogen application. The most abundant metals in the straw were potassium and calcium and their concentrations almost doubled over the range of nitrogen supplies. The enzymatic...

Chalcogen-based aerogels as a multifunctional platform for remediation of radioactive iodine

International Nuclear Information System (INIS)

Riley, Brian J.; Chun, Jaehun; Ryan, Joseph V.; Matyas, Josef; Li, Xiaohong S.; Matson, Dean W.; Sundaram, S.K.; Strachan, Denis M.; Vienna, John D.

2011-01-01

Aerogels employing chalcogen-based (i.e., S, Se, and/or Te) structural units and interlinking metals are termed chalcogels and have many emerging applications. Here, chalcogels are discussed in the context of nuclear fuel reprocessing and radioactive waste remediation. Motivated by previous work on removal of heavy metals in aqueous solution, we explored the application of germanium sulfide chalcogels as a sorbent for gas-phase I2 based on Pearson's Hard/Soft Acid-Base (HSAB) principle. This work was driven by a significant need for high-efficiency sorbents for I-129, a long-lived isotope evolved during irradiated UO2 nuclear fuel reprocessing. These chalcogel compositions are shown to possess an affinity for iodine gas, I2(g), at various concentrations in air and the affinity is attributed to a strong chemical attraction between the chalcogen and I2(g), according to the HSAB principle. The high sorption efficiency is facilitated by the high porosity as well as the exceptionally large surface area of the chalcogels.

Analysis of buried etch-stop layers in silicon by nitrogen-ion implantation

International Nuclear Information System (INIS)

Acero, M.C.; Esteve, J.; Montserrat, J.; Perez-Rodriguez, A.; Garrido, B.; Romano-Rodriguez, A.; Morante, J.R.

1993-01-01

The analysis of the etch-stop properties of layers obtained by substoichiometric nitrogen-ion implantation and annealing in silicon has been performed as a function of the implantation conditions. The analysis of the etching efficiency has been tested in TMAH-IPA systems. The results obtained show the need to implant at doses higher than 2 x 10 17 cm -2 to obtain etch-stop layers stable under high-temperature annealing. So, for implantation doses of 5 x 10 17 cm -2 , layers stand unetched for times longer than 2 h. The preliminary structural analysis of the samples suggests the presence of an amorphous silicon nitride layer for higher implantation doses. (author)

Synthesis of 1,3-bis(organylchalcogeno)propanes and 1,2-dichalcogenolanes having different chalcogen atoms in the molecule

International Nuclear Information System (INIS)

Elaev, A.V.; Grabel'nykh, V.A.; Russavskaya, N.V.; Klyba, L.V.; Zhanchipova, E.R.; Levanova, E.P.; Sukhomazova, Eh.N.; Albanov, A.I.; Mamaseva, T.V.; Korchevin, N.A.

2007-01-01

Oligomeric trimethylene dichalcogenides and the corresponding 1,2-dichalcogenolanes having both similar and different chalcogen atoms in the molecule were synthesized by reactions of 1-bromo-3-chloropropanes with two elemental chalcogens (S, Se; S, Te; Se, Te) activated by the system hydrazine hydrate-alkali. Reductive cleavage of the oligomeric products in the system hydrazine hydrate-alkali, followed by alkylation with methyl iodide or ethyl bromide gave 1,3-bis(alkylchalcogeno)propanes. The latter were also obtained from the corresponding dialkyl dichalcogenides and 1-bromo-3-chloropropane in the alkaline reducing system [ru

Boron diffusion into nitrogen doped silicon films for P{sup +} polysilicon gate structures

Energy Technology Data Exchange (ETDEWEB)

Mansour, Farida; Mahamdi, Ramdane; Jalabert, Laurent; Temple-Boyer, Pierre

2003-06-23

This paper deals with the study of the boron diffusion in nitrogen doped silicon (NIDOS) deposited from disilane Si{sub 2}H{sub 6} and ammonia NH{sub 3} for the development of P{sup +} polysilicon gate metal oxide semiconductor (MOS) devices. NIDOS films with varied nitrogen content have been boron implanted, then annealed and finally analysed by secondary ion mass spectroscopy (SIMS). In order to simulate the experimental SIMS of boron concentration profiles in the NIDOS films, a model adapted to the particular conditions of the samples elaboration, i.e. the very high boron concentration and the nitrogen content, has been established. The boron diffusion reduction in NIDOS films with increasing nitrogen rates has been evidenced by the profiles as well as by the obtained diffusion coefficients, which shows that the nitrogen incorporation reduces the boron diffusion. This has been confirmed by capacitance-voltage (C-V) measurements performed on MOS capacitors: the higher the nitrogen content, the lower the flat-band voltage. Finally, these results demonstrate that the improvement of the gate oxide quality occurs with the suppression of the boron penetration.

Analysis of buried etch-stop layers in silicon by nitrogen-ion implantation

Energy Technology Data Exchange (ETDEWEB)

Acero, M.C.; Esteve, J.; Montserrat, J. (Centro Nacional de Microelectronica (CNM-CSIC), Bellaterra (Spain)); Perez-Rodriguez, A.; Garrido, B.; Romano-Rodriguez, A.; Morante, J.R. (Barcelona Univ. (Spain). Dept. Fisica Aplicada i Electronica)

1993-09-01

The analysis of the etch-stop properties of layers obtained by substoichiometric nitrogen-ion implantation and annealing in silicon has been performed as a function of the implantation conditions. The analysis of the etching efficiency has been tested in TMAH-IPA systems. The results obtained show the need to implant at doses higher than 2 x 10[sup 17] cm[sup -2] to obtain etch-stop layers stable under high-temperature annealing. So, for implantation doses of 5 x 10[sup 17] cm[sup -2], layers stand unetched for times longer than 2 h. The preliminary structural analysis of the samples suggests the presence of an amorphous silicon nitride layer for higher implantation doses. (author).

A Revival of Waste: Atmospheric Pressure Nitrogen Plasma Jet Enhanced Jumbo Silicon/Silicon Carbide Composite in Lithium Ion Batteries.

Science.gov (United States)

Chen, Bing-Hong; Chuang, Shang-I; Liu, Wei-Ren; Duh, Jenq-Gong

2015-12-30

In this study, a jumbo silicon/silicon carbide (Si/SiC) composite (JSC), a novel anode material source, was extracted from solar power industry cutting waste and used as a material for lithium-ion batteries (LIBs), instead of manufacturing the nanolized-Si. Unlike previous methods used for preventing volume expansion and solid electrolyte interphase (SEI), the approach proposed here simply entails applying surface modification to JSC-based electrodes by using nitrogen-atmospheric pressure plasma jet (N-APPJ) treatment process. Surface organic bonds were rearranged and N-doped compounds were formed on the electrodes through applying different plasma treatment durations, and the qualitative examinations of before/after plasma treatment were identified by X-ray photoelectron spectroscopy (XPS) and electron probe microanalyzer (EPMA). The surface modification resulted in the enhancement of electrochemical performance with stable capacity retention and high Coulombic efficiency. In addition, depth profile and scanning electron microscope (SEM) images were executed to determine the existence of Li-N matrix and how the nitrogen compounds change the surface conditions of the electrodes. The N-APPJ-induced rapid surface modification is a major breakthrough for processing recycled waste that can serve as anode materials for next-generation high-performance LIBs.

Annealing effect on thermodynamic and physical properties of mesoporous silicon: A simulation and nitrogen sorption study

Science.gov (United States)

Kumar, Pushpendra; Huber, Patrick

2016-04-01

Discovery of porous silicon formation in silicon substrate in 1956 while electro-polishing crystalline Si in hydrofluoric acid (HF), has triggered large scale investigations of porous silicon formation and their changes in physical and chemical properties with thermal and chemical treatment. A nitrogen sorption study is used to investigate the effect of thermal annealing on electrochemically etched mesoporous silicon (PS). The PS was thermally annealed from 200˚C to 800˚C for 1 hr in the presence of air. It was shown that the pore diameter and porosity of PS vary with annealing temperature. The experimentally obtained adsorption / desorption isotherms show hysteresis typical for capillary condensation in porous materials. A simulation study based on Saam and Cole model was performed and compared with experimentally observed sorption isotherms to study the physics behind of hysteresis formation. We discuss the shape of the hysteresis loops in the framework of the morphology of the layers. The different behavior of adsorption and desorption of nitrogen in PS with pore diameter was discussed in terms of concave menisci formation inside the pore space, which was shown to related with the induced pressure in varying the pore diameter from 7.2 nm to 3.4 nm.

Effect of silicon on the structure, tribological behaviour, and mechanical properties of nitrogen-containing chromium-manganese austenitic steels

International Nuclear Information System (INIS)

Korshunov, L.G.; Chernenko, N.L.; Gojkhenberg, Yu.N.

2003-01-01

The effect of silicon in quantity of 3.5-4.5 mass. % on tribological behaviour is studied for nitrogen-bearing (0.20-0.52 mass. % of nitrogen) chromium-manganese austenitic steels (10Kh15G23S4A0.20, 10Kh16G17N3S4A0.30, 10Kh19G20NS4A0.50, 12Kh19G19NS2A0.50, 10Kh18G19A0.50, 08Kh16G8N10S4A0.18). Mechanical properties and corrosion resistance of the steels are determined. Using metallographic, x-ray diffraction and electron microscopical methods a study is made into structural transformations running in the steels considered under friction and static tension. It is shown that additional silicon alloying of nitrogen-bearing chromium-manganese austenitic steels results in an essential increase of adhesion wear resistance of the materials on retention of low friction coefficient (f=0.25-0.33). A strong silicon effect on steel tribological behaviour is related with planar slip activation and with an increase of austenite strength and heat resistance [ru

Elucidating the Impact of Chalcogen Content on the Photovoltaic Properties of Oxychalcogenide Perovkskites: NaMO3-x Qx (M=Nb, Ta; Q=S, Se, Te).

Science.gov (United States)

Park, Heesoo; Alharbi, Fahhad H; Sanvito, Stefano; Tabet, Nouar; El-Mellouhi, Fedwa

2018-03-19

In the quest for nontoxic and stable perovskites for solar cells, we have conducted a systematic study of the effect of chalcogen content in oxychalcogenide perovskite by using DFT and quasi-particle perturbation theory. We explored the changes in the electronic structure due to the substitution of O atoms in NaNbO 3 and NaTaO 3 perovskite structures with various chalcogens (S, Se, Te) at different concentrations. Interestingly, the introduction of the chalcogen atoms resulted in a drastic reduction in the electronic band gap, which made some of the compounds fall within the visible range of the solar spectrum. In addition, our analysis of the electronic structure shows that the optical transition becomes direct as a result of the strong hybridization between the orbitals of the transition metal and those of the chalcogen ion, in contrast to the indirect band feature of NaNbO 3 and NaTaO 3 . We identified candidates with a high theoretical solar conversion efficiency that approached the Shockley-Queisser limit, which makes them suitable for thin-film solar cell applications. The present work serves as a guideline for experimental efforts by identifying the chalcogen content that should be targeted during the synthetic route of thermodynamically stable and strongly photoactive absorbers for oxychalcogenide perovskites in thin-film solar cells. © 2018 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

Intra-/Intermolecular Bifurcated Chalcogen Bonding in Crystal Structure of Thiazole/Thiadiazole Derived Binuclear (DiaminocarbenePdII Complexes

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Alexander S. Mikherdov

2018-02-01

Full Text Available The coupling of cis-[PdCl2(CNXyl2] (Xyl = 2,6-Me2C6H3 with 4-phenylthiazol-2-amine in molar ratio 2:3 at RT in CH2Cl2 leads to binuclear (diaminocarbenePdII complex 3c. The complex was characterized by HRESI+-MS, 1H NMR spectroscopy, and its structure was elucidated by single-crystal XRD. Inspection of the XRD data for 3c and for three relevant earlier obtained thiazole/thiadiazole derived binuclear diaminocarbene complexes (3a EYOVIZ; 3b: EYOWAS; 3d: EYOVOF suggests that the structures of all these species exhibit intra-/intermolecular bifurcated chalcogen bonding (BCB. The obtained data indicate the presence of intramolecular S•••Cl chalcogen bonds in all of the structures, whereas varying of substituent in the 4th and 5th positions of the thiazaheterocyclic fragment leads to changes of the intermolecular chalcogen bonding type, viz. S•••π in 3a,b, S•••S in 3c, and S•••O in 3d. At the same time, the change of heterocyclic system (from 1,3-thiazole to 1,3,4-thiadiazole does not affect the pattern of non-covalent interactions. Presence of such intermolecular chalcogen bonding leads to the formation of one-dimensional (1D polymeric chains (for 3a,b, dimeric associates (for 3c, or the fixation of an acetone molecule in the hollow between two diaminocarbene complexes (for 3d in the solid state. The Hirshfeld surface analysis for the studied X-ray structures estimated the contributions of intermolecular chalcogen bonds in crystal packing of 3a–d: S•••π (3a: 2.4%; 3b: 2.4%, S•••S (3c: less 1%, S•••O (3d: less 1%. The additionally performed DFT calculations, followed by the topological analysis of the electron density distribution within the framework of Bader’s theory (AIM method, confirm the presence of intra-/intermolecular BCB S•••Cl/S•••S in dimer of 3c taken as a model system (solid state geometry. The AIM analysis demonstrates the presence of appropriate bond critical points for these

Reduction of chalcogen oxyanions and generation of nanoprecipitates by the photosynthetic bacterium Rhodobacter capsulatus

Energy Technology Data Exchange (ETDEWEB)

Borghese, Roberto, E-mail: roberto.borghese@unibo.it [Department of Pharmacy and Biotechnology, University of Bologna (Italy); Baccolini, Chiara; Francia, Francesco [Department of Pharmacy and Biotechnology, University of Bologna (Italy); Sabatino, Piera [Department of Chemistry G. Ciamician, University of Bologna (Italy); Turner, Raymond J. [Department of Biological Sciences, University of Calgary, Calgary, Alberta (Canada); Zannoni, Davide, E-mail: davide.zannoni@unibo.it [Department of Pharmacy and Biotechnology, University of Bologna (Italy)

2014-03-01

Graphical abstract: - Highlights: • R. capsulatus cells produce extracellular chalcogens nanoprecipitates when lawsone is present. • Lawsone acts as a redox mediator from reducing equivalents to tellurite and selenite. • Nanoprecipitates production depends on carbon source and requires metabolically active cells. • Te{sup 0} and Se{sup 0} nanoprecipitates are identified by X-ray diffraction (XRD) spectroscopy. - Abstract: The facultative photosynthetic bacterium Rhodobacter capsulatus is characterized in its interaction with the toxic oxyanions tellurite (Te{sup IV}) and selenite (Se{sup IV}) by a highly variable level of resistance that is dependent on the growth mode making this bacterium an ideal organism for the study of the microbial interaction with chalcogens. As we have reported in the past, while the oxyanion tellurite is taken up by R. capsulatus cells via acetate permease and it is reduced to Te{sup 0} in the cytoplasm in the form of splinter-like black intracellular deposits no clear mechanism was described for Se{sup 0} precipitation. Here, we present the first report on the biotransformation of tellurium and selenium oxyanions into extracellular Te{sup 0} and Se{sup 0}nanoprecipitates (NPs) by anaerobic photosynthetically growing cultures of R. capsulatus as a function of exogenously added redox-mediator lawsone, i.e. 2-hydroxy-1,4-naphthoquinone. The NPs formation was dependent on the carbon source used for the bacterial growth and the rate of chalcogen reduction was constant at different lawsone concentrations, in line with a catalytic role for the redox mediator. X-ray diffraction (XRD) analysis demonstrated the Te{sup 0} and Se{sup 0} nature of the nanoparticles.

Oxidation Properties of Nitrogen-Doped Silicon Films Deposited from Si2H6 and NH3

Science.gov (United States)

Scheid, Emmanuel; Boyer, Pierre; Samitier, Josep; Hassani, Ahmed

1994-03-01

Si2H6/NH3 gas mixture was employed to obtain, by low-pressure chemical vapor deposition (LPCVD) at low temperature, nitrogen-doped silicon (NIDOS) films with various N/Si ratios. Thermal oxide was grown in dry oxygen at 900°C and 1100°C on NIDOS films. The result indicates that the nitrogen content of NIDOS films, assessed by X-ray photoelectron spectroscopy (XPS) and Fourier transform infrared spectroscopy (FTIR), greatly influences their oxidation rate.

Electronic structure of deep impurity centers in silicon

International Nuclear Information System (INIS)

Oosten, A.B. van.

1989-01-01

This thesis reports an experimental study of deep level impurity centers in silicon, with much attention for theoretical interpretation of the data. A detailed picture of the electronic structure of several centers was obtained by magnetic resonance techniques, such as electron paramagnetic resonance (EPR), electron-nuclear double resonance (ENDOR) and field scanned ENDOR (FSE). The thesis consists of two parts. The first part deals with chalcogen (sulfur, selenium and tellurium) related impurities, which are mostly double donors. The second part is about late transition metal (nickel, palladium and platinum) impurities, which are single (Pd,Pt) or double (Ni) acceptor centers. (author). 155 refs.; 51 figs.; 23 tabs

Complex Boron Redistribution in P+ Doped-polysilicon / Nitrogen Doped Silicon Bi-layers during Activation Annealing

Science.gov (United States)

Abadli, S.; Mansour, F.; Perrera, E. Bedel

We have investigated and modeled the complex phenomenon of boron (B) redistribution process in strongly doped silicon bilayers structure. A one-dimensional two stream transfer model well adapted to the particular structure of bi- layers and to the effects of strong-concentrations has been developed. This model takes into account the instantaneous kinetics of B transfer, trapping, clustering and segregation during the thermal B activation annealing. The used silicon bi-layers have been obtained by low pressure chemical vapor deposition (LPCVD) method, using in-situ nitrogen- doped-silicon (NiDoS) layer and strongly B doped polycrystalline-silicon (P+) layer. To avoid long redistributions, thermal annealing was carried out at relatively lowtemperatures (600 °C and 700 °C) for various times ranging between 30 minutes and 2 hours. The good adjustment of the simulated profiles with the experimental secondary ion mass spectroscopy (SIMS) profiles allowed a fundamental understanding about the instantaneous physical phenomena giving and disturbing the complex B redistribution profiles-shoulders kinetics.

EFFECT OF SILICON, NITROGEN AND POTASSIUM IN THE INCIDENCE OF TOMATO PIN WORM IN INDUSTRIAL TOMATO PLANTS

Directory of Open Access Journals (Sweden)

Marília Cristina dos Santos2*

2013-12-01

of two stems per plant. It was observed a decrease in the number of pinworm leaf mines with an increase in silicon and potassium doses and an increase in the number of mines with an increase on nitrogen doses.

Annual reports in inorganic and general syntheses 1973

CERN Document Server

Niedenzu, Kurt

1974-01-01

Annual Reports in Inorganic and General Syntheses-1973 presents an organized annual summary of synthetic developments in inorganic chemistry and its related areas. The book covers the synthetic aspects and structural or mechanistic features of elements, including the main group hydrides, alkali and alkaline earth elements, boron, aluminium, gallium, indium, thallium, silicon, germanium, tin, and lead, nitrogen, phosphorus, arsenic, antimony, bismuth, chalcogens, halogens and pseudohalogens, and noble gases. The text also discusses the synthetic aspects and structural or mechanistic features of

S center dot center dot center dot N chalcogen bonded complexes of carbon disulfide with diazines. Theoretical study

Czech Academy of Sciences Publication Activity Database

Zierkiewicz, W.; Fanfrlík, Jindřich; Michalczyk, M.; Michalska, D.; Hobza, Pavel

2018-01-01

Roč. 500, Jan 26 (2018), s. 37-44 ISSN 0301-0104 Institutional support: RVO:61388963 Keywords : chalcogen bond * carbon disulfide * diazines * DFT Subject RIV: CF - Physical ; Theoretical Chemistry OBOR OECD: Physical chemistry Impact factor: 1.767, year: 2016

Tetrel, Chalcogen, and Charge-Assisted Hydrogen Bonds in 2-((2-Carboxy-1-(substituted-2-hydroxyethylthio Pyridin-1-ium Chlorides

Directory of Open Access Journals (Sweden)

Firudin I. Guseinov

2017-10-01

Full Text Available Reaction of 2-chloro-2-(diethoxymethyl-3-substitutedoxirane or 1-chloro-1-(substituted -3,3-diethoxypropan-2-one with pyridine-2-thiol in EtOH at 25 °C yields 3-(diethoxymethyl-3-hydroxy-2-substituted-2,3-dihydrothiazolo[3,2-a]pyridin-4-ium chlorides, which subsequently, in MeCN at 85°C, transforms into ring-opening products, 2-((2-carboxy-1-(substituted -2-hydroxyethylthiopyridin-1-ium chlorides. The tetrel (C···O and chalcogen (S···O bonds are found in the structures of 5 and 6, respectively. Compound 6 is also present in halogen bonding with a short O···Cl distance (3.067 Å. Both molecules are stabilized in crystal by tetrel, chalcogen, and multiple charge-assisted hydrogen bonds.

Simultaneous determination of boron, carbon and nitrogen in silicon by deuteron activation analysis

International Nuclear Information System (INIS)

He, Shiyu; Wang, Yinsong; Jin, Baikang; Hua, Zhifen; Zhao, Kaihua

1984-01-01

The paper describes simultaneous determination of trace quantities of B, C and N in semiconductor silicon by nuclear reaction of 10 B(d, n) 11 C(T 1/2 = 20.3 min), 11 B(d, 2n) 11 C, 12 C(d, n) 13 N(T 1/2 = 9.96 min) and 14 N(d, n) 15 O(T 1/2 = 2.03 min) with deuterons from a 1.2 m cyclotron in our institute. An inert-gas fusion technique is adopted for rapid radiochemical separation after irradiation of the samples. 11 C, 13 N and 15 O are absorbed in ascarite 5A molecular sieve cooled in liquid nitrogen and Hopcalite reagent at a temperature of 650 deg C respectively. Positron Annihilation events of each produced nucleus are counted by a γ - γ coincidence measuring system. B, C and N contents of about several ten parts per billion in silicon are then calculated simultaneously by a relatively quantitative method. Relative standard deviation for C, B and N are less than +-50% respectively. This method is simple, rapid and sensitive for estimating light element content in silicon material. (author)

Ion beam studied of silicon oxynitride and silicon nitroxide thin layers

International Nuclear Information System (INIS)

Oude Elferink, J.B.

1989-01-01

In this the processes occurring during high temperature treatments of silicon oxynitride and silicon oxide layers are described. Oxynitride layers with various atomic oxygen to nitrogen concentration ration (O/N) are considered. The high energy ion beam techniques Rutherford backscattering spectroscopy, elastic recoil detection and nuclear reaction analysis have been used to study the layer structures. A detailed discussion of these ion beam techniques is given. Numerical methods used to obtain quantitative data on elemental compositions and depth profiles are described. The electrical compositions and depth profiles are described. The electrical properties of silicon nitride films are known to be influenced by the behaviour of hydrogen in the film during high temperature anneling. Investigations of the behaviour of hydrogen are presented. Oxidation of silicon (oxy)nitride films in O 2 /H 2 0/HCl and nitridation of silicon dioxide films in NH 3 are considered since oxynitrides are applied as an oxidation mask in the LOCOS (Local oxidation of silicon) process. The nitridation of silicon oxide layers in an ammonia ambient is considered. The initial stage and the dependence on the oxide thickness of nitrogen and hydrogen incorporation are discussed. Finally, oxidation of silicon oxynitride layers and of silicon oxide layers are compared. (author). 76 refs.; 48 figs.; 1 tab

Determination of oxygen, nitrogen, and silicon in Nigerian fossil fuels by 14 MeV neutron activation analysis

International Nuclear Information System (INIS)

Hannan, M.A.; Oluwole, A.F.; Kehinde, L.O.; Borisade, A.B.

2003-01-01

Classification, assessment, and utilization of coal and crude oil extracts are enhanced by analysis of their oxygen content. Values of oxygen obtained 'by difference' from chemical analysis have proved inaccurate. The oxygen, nitrogen, and silicon content of Nigerian coal samples, crude oils, bitumen extracts, and tar sand samples were measured directly using instrumental fast neutron activation analysis (FNAA). The total oxygen in the coal ranges from 5.20% to 23.3%, in the oil and extracts from 0.14% to 1.08%, and in the tar sands from 38% to 47%. The nitrogen content in the coal ranges from 0.54% to 1.35%, in the crude oil and bitumen extracts from ≤ 0.014% to 0.490%, and in the tar sands from 0.082% to 0.611%. The silicon content in the coal ranges from 1.50% to 8.86%; in the oil and the bitumen extracts it is <1%, and in the tar sands between 25.1% and 37.5%. The results show that Nigerian coals are mostly sub-bituminous. However, one of the samples showed bituminous properties as evidenced by the dry ash-free (daf) percent of carbon obtained. This same sample indicated a higher ash content resulting in a comparatively high percentage of silicon. In oils and tar sands from various locations, a comparison of elements is made. (author)

Silicon heterojunction transistor

International Nuclear Information System (INIS)

Matsushita, T.; Oh-uchi, N.; Hayashi, H.; Yamoto, H.

1979-01-01

SIPOS (Semi-insulating polycrystalline silicon) which is used as a surface passivation layer for highly reliable silicon devices constitutes a good heterojunction for silicon. P- or B-doped SIPOS has been used as the emitter material of a heterojunction transistor with the base and collector of silicon. An npn SIPOS-Si heterojunction transistor showing 50 times the current gain of an npn silicon homojunction transistor has been realized by high-temperature treatments in nitrogen and low-temperature annealing in hydrogen or forming gas

Growth and Nitrogen Fixation in Silicon and/or Potassium Fed Chickpeas Grown under Drought and Well Watered Conditions

Directory of Open Access Journals (Sweden)

Fawaz Kurdali

2013-08-01

Full Text Available A pot experiment was conducted to study the effects of silicon (Si and/or potassium (K on plant growth, nitrogen uptake and N2-fixation in water stressed (FC1 and well watered (FC2 chickpea plants using 15N and 13C isotopes. Three fertilizer rates of Si (Si50, Si100 and Si200 and one fertilizer rate of K were used. For most of the growth parameters, it was found that Si either alone or in combination with K was more effective to alleviate water stress than K alone. Increasing soil water level from FC1 to FC2 often had a positive impact on values of almost all studied parameters. The Si100K+ (FC1 and Si50K+ (FC2 treatments gave high enough amounts of N2-fixation, higher dry matter production and greater nitrogen yield. The percent increments of total N2-fixed in the above mentioned treatments were 51 and 47% over their controls, respectively. On the other hand, increasing leave’s dry matter in response to the solely added Si (Si50K- and Si100K- is associated with lower Δ13C under both watering regimes. This may indicate that Si fertilization had a beneficial effect on water use efficiency (WUE. Hence, Δ13C could be an adequate indicator of WUE in response to the exogenous supply of silicon to chickpea plants. Our results highlight that Si is not only involved in amelioration of growth and in maintaining of water status but it can be also considered an important element for the symbiotic performance of chickpea plants. It can be concluded that the synergistic effect of silicon and potassium fertilization with adequate irrigation improves growth and nitrogen fixation in chickpea plants.

Surface and morphological features of laser-irradiated silicon under vacuum, nitrogen and ethanol

Energy Technology Data Exchange (ETDEWEB)

Hayat, Asma, E-mail: asmahayat@gcu.edu.pk; Bashir, Shazia; Akram, Mahreen; Mahmood, Khaliq; Iqbal, Muhammad Hassan

2015-12-01

Highlights: • Laser irradiation effects on Si surface have been explored. • An Excimer Laser was used as a source. • SEM analysis was performed to explore surface morphology. • Raman spectroscopy analysis was carried out to find crystallographical alterations. - Abstract: Laser-induced surface and structural modification of silicon (Si) has been investigated under three different environments of vacuum, nitrogen (100 Torr) and ethanol. The interaction of 1000 pulses of KrF (λ ≈ 248 nm, τ ≈ 18 ns, repetition rate ≈ 30 Hz) Excimer laser at two different fluences of 2.8 J/cm{sup 2} and 4 J/cm{sup 2} resulted in formation of various kinds of features such as laser induced periodic surface structures (LIPSS), spikes, columns, cones and cracks. Surface morphology has been observed by Scanning Electron Microscope (SEM). Whereas, structural modification of irradiated targets is explored by Raman spectroscopy. SEM analysis exhibits a non-uniform distribution of micro-scale pillars and spikes at the central ablated regime of silicon irradiated at low laser fluence of 2.8 J/cm{sup 2} under vacuum. Whereas cones, pits, cavities and ripples like features are seen at the boundaries. At higher fluence of 4 J/cm{sup 2}, laser induced periodic structures as well as micro-columns are observed. In the case of ablation in nitrogen environment, melting, splashing, self-organized granular structures and cracks along with redeposition are observed at lower fluence. Such types of small scaled structures in nitrogen are attributed to confinement and shielding effects of nitrogen plasma. Whereas, a crater with multiple ablative layers is formed in the case of ablation at higher fluence. Significantly different surface morphology of Si is observed in the case of ablation in ethanol. It reveals the formation of cavities along with small scale pores and less redeposition. These results reveal that the growth of surface and morphological features of irradiated Si are strongly

Surface and morphological features of laser-irradiated silicon under vacuum, nitrogen and ethanol

International Nuclear Information System (INIS)

Hayat, Asma; Bashir, Shazia; Akram, Mahreen; Mahmood, Khaliq; Iqbal, Muhammad Hassan

2015-01-01

Highlights: • Laser irradiation effects on Si surface have been explored. • An Excimer Laser was used as a source. • SEM analysis was performed to explore surface morphology. • Raman spectroscopy analysis was carried out to find crystallographical alterations. - Abstract: Laser-induced surface and structural modification of silicon (Si) has been investigated under three different environments of vacuum, nitrogen (100 Torr) and ethanol. The interaction of 1000 pulses of KrF (λ ≈ 248 nm, τ ≈ 18 ns, repetition rate ≈ 30 Hz) Excimer laser at two different fluences of 2.8 J/cm 2 and 4 J/cm 2 resulted in formation of various kinds of features such as laser induced periodic surface structures (LIPSS), spikes, columns, cones and cracks. Surface morphology has been observed by Scanning Electron Microscope (SEM). Whereas, structural modification of irradiated targets is explored by Raman spectroscopy. SEM analysis exhibits a non-uniform distribution of micro-scale pillars and spikes at the central ablated regime of silicon irradiated at low laser fluence of 2.8 J/cm 2 under vacuum. Whereas cones, pits, cavities and ripples like features are seen at the boundaries. At higher fluence of 4 J/cm 2 , laser induced periodic structures as well as micro-columns are observed. In the case of ablation in nitrogen environment, melting, splashing, self-organized granular structures and cracks along with redeposition are observed at lower fluence. Such types of small scaled structures in nitrogen are attributed to confinement and shielding effects of nitrogen plasma. Whereas, a crater with multiple ablative layers is formed in the case of ablation at higher fluence. Significantly different surface morphology of Si is observed in the case of ablation in ethanol. It reveals the formation of cavities along with small scale pores and less redeposition. These results reveal that the growth of surface and morphological features of irradiated Si are strongly dependent upon the

Thermal Stability of Hi-Nicalon SiC Fiber in Nitrogen and Silicon Environments

Science.gov (United States)

Bhatt, R. T.; Garg, A.

1995-01-01

The room temperature tensile strength of uncoated and two types of pyrolytic boron nitride coated (PBN and Si-rich PBN) Hi-Nicalon SiC fibers was determined after 1 to 400 hr heat treatments to 1800 C under N2 pressures of 0.1, 2, and 4 MPa, and under 0.1 Mpa argon and vacuum environments. In addition, strength stability of both uncoated and coated fibers embedded in silicon powder and exposed to 0.1 MPa N2 for 24 hrs at temperatures to 1400 C was investigated. The uncoated and both types of BN coated fibers exposed to N2 for 1 hr showed noticeable strength degradation above 1400 C and 1600 C, respectively. The strength degradation appeared independent of nitrogen pressure, time of heat treatment, and surface coatings. TEM microstructural analysis suggests that flaws created due to SiC grain growth are responsible for the strength degradation. In contact with silicon powder, the uncoated and both types of PBN coated fibers degrade rapidly above 1350 C.

Pulsed 1064 nm Nd-YAG Laser Deposition of Titanium on Silicon in a Nitrogen Environment

Directory of Open Access Journals (Sweden)

Wilson Garcia

1999-12-01

Full Text Available Pulsed laser deposition (PLD technique was demonstrated for the deposition of titanium nitride (TiN thin films on Si (100 substrates. A 1064 nm pulsed Nd-YAG laser is focused on a titanium (99.5% target in a nitrogen environment to generate the atomic flux needed for the film deposition. Spectroscopic analysis of the plasma emission indicates the presence of atomic titanium and nitrogen, which are the precursors of TiN. Images of the films grown at different laser pulse energies show an increase in the number and size of deposited droplets and clusters with increasing laser pulse energy. A decrease in cluster and droplet size is also observed, with an increase in substrate temperature. EDS data show an increase in the titanium peak relative to the silicon as the ambient nitrogen pressure is decreased. An increase in deposition time was found to result in large clusters and irregularly shaped structures on the substrate. Post-deposition annealing of the samples enhanced the crystallinity of the film.

Zero Field Splitting of the chalcogen diatomics using relativistic correlated wave-function methods

DEFF Research Database (Denmark)

Rota, Jean-Baptiste; Knecht, Stefan; Fleig, Timo

2011-01-01

The spectrum arising from the (π*)2 configuration of the chalcogen dimers, namely the X21, a2 and b0+ states, is calculated using Wave-Function Theory (WFT) based methods. Two-component (2c) and four-component (4c) MultiReference Configuration Interaction (MRCI) and Fock-Space Coupled Cluster (FSCC......) methods are used as well as two-step methods Spin-Orbit Complete Active Space Perturbation Theory at 2nd order (SO-CASPT2) and Spin-Orbit Difference Dedicated Configuration Interaction (SODDCI). The energy of the X21 state corresponds to the Zero-Field Splitting (ZFS) of the ground state spin triplet...

Characterization of carbon, nitrogen, oxygen and refractory metals in binary and ternary silicon-based films using ion beam methods

International Nuclear Information System (INIS)

Somatri-Bouamrane, R.

1996-01-01

Ion beam methods (non Rutherford backscattering, nuclear reactions) have been carried out in order to characterize silicon-based films. The cross sections for the reactions 12 C(α,α), 14 N(α,α), 16 O(α,α), 28 Si(α,α) and 14 N(α,p) have been measured within 2 and 7 MeV. CVD beta SiC films could be analyzed and the interface between silicon carbide and the (100) silicon substrate was studied. The epitaxial growth of the beta SiC film could be modelled by comparing the results obtained with ion beam analysis, infrared spectroscopy and electron microscopy. Moreover, the stoichiometry of low pressure CVD Me-Si-N (Me=Re, W, Ti, Ta) ternary systems was studied. The evolution of the nitrogen content in W-Si-N systems allowed to study their stability with respect to the annealing conditions. (N.T.)

Hydrophobic recovery of repeatedly plasma-treated silicone rubber .2. A comparison of the hydrophobic recovery in air, water, or liquid nitrogen

NARCIS (Netherlands)

Everaert, EP; VanderMei, HC; Busscher, HJ

1996-01-01

Surfaces of medical grade silicone rubber (Q7-4750, Dow Coming) were modified by repeated (six times) RF plasma treatments using various discharge gases: oxygen, argon, carbon dioxide, and ammonia. The treated samples were stored for a period of 3 months in ambient air, water, or liquid nitrogen.

Nitrogen-doped amorphous carbon-silicon core-shell structures for high-power supercapacitor electrodes.

Science.gov (United States)

Tali, S A Safiabadi; Soleimani-Amiri, S; Sanaee, Z; Mohajerzadeh, S

2017-02-10

We report successful deposition of nitrogen-doped amorphous carbon films to realize high-power core-shell supercapacitor electrodes. A catalyst-free method is proposed to deposit large-area stable, highly conformal and highly conductive nitrogen-doped amorphous carbon (a-C:N) films by means of a direct-current plasma enhanced chemical vapor deposition technique (DC-PECVD). This approach exploits C 2 H 2 and N 2 gases as the sources of carbon and nitrogen constituents and can be applied to various micro and nanostructures. Although as-deposited a-C:N films have a porous surface, their porosity can be significantly improved through a modification process consisting of Ni-assisted annealing and etching steps. The electrochemical analyses demonstrated the superior performance of the modified a-C:N as a supercapacitor active material, where specific capacitance densities as high as 42 F/g and 8.5 mF/cm 2 (45 F/cm 3 ) on silicon microrod arrays were achieved. Furthermore, this supercapacitor electrode showed less than 6% degradation of capacitance over 5000 cycles of a galvanostatic charge-discharge test. It also exhibited a relatively high energy density of 2.3 × 10 3  Wh/m 3 (8.3 × 10 6  J/m 3 ) and ultra-high power density of 2.6 × 10 8  W/m 3 which is among the highest reported values.

New Insight on Tuning Electrical Transport Properties via Chalcogen Doping in n-type Mg3Sb2-Based Thermoelectric Materials

DEFF Research Database (Denmark)

Zhang, Jiawei; Song, Lirong; Borup, Kasper

2018-01-01

n-type Mg3Sb1.5Bi0.5 has recently been discovered to be a promising thermoelectric material, yet the effective n-type dopants are mainly limited to the chalcogens. This may be attributed to the limited chemical insight into the effects from different n-type dopants. By comparing the effects of di...

Effect of additive gases and injection methods on chemical dry etching of silicon nitride, silicon oxynitride, and silicon oxide layers in F2 remote plasmas

International Nuclear Information System (INIS)

Yun, Y. B.; Park, S. M.; Kim, D. J.; Lee, N.-E.; Kim, K. S.; Bae, G. H.

2007-01-01

The authors investigated the effects of various additive gases and different injection methods on the chemical dry etching of silicon nitride, silicon oxynitride, and silicon oxide layers in F 2 remote plasmas. N 2 and N 2 +O 2 gases in the F 2 /Ar/N 2 and F 2 /Ar/N 2 /O 2 remote plasmas effectively increased the etch rate of the layers. The addition of direct-injected NO gas increased the etch rates most significantly. NO radicals generated by the addition of N 2 and N 2 +O 2 or direct-injected NO molecules contributed to the effective removal of nitrogen and oxygen in the silicon nitride and oxide layers, by forming N 2 O and NO 2 by-products, respectively, and thereby enhancing SiF 4 formation. As a result of the effective removal of the oxygen, nitrogen, and silicon atoms in the layers, the chemical dry etch rates were enhanced significantly. The process regime for the etch rate enhancement of the layers was extended at elevated temperature

Cooperativity of halogen, chalcogen, and pnictogen bonds in infinite molecular chains by electronic structure theory.

Science.gov (United States)

George, Janine; Deringer, Volker L; Dronskowski, Richard

2014-05-01

Halogen bonds (XBs) are intriguing noncovalent interactions that are frequently being exploited for crystal engineering. Recently, similar bonding mechanisms have been proposed for adjacent main-group elements, and noncovalent "chalcogen bonds" and "pnictogen bonds" have been identified in crystal structures. A fundamental question, largely unresolved thus far, is how XBs and related contacts interact with each other in crystals; similar to hydrogen bonding, one might expect "cooperativity" (bonds amplifying each other), but evidence has been sparse. Here, we explore the crucial step from gas-phase oligomers to truly infinite chains by means of quantum chemical computations. A periodic density functional theory (DFT) framework allows us to address polymeric chains of molecules avoiding the dreaded "cluster effects" as well as the arbitrariness of defining a "large enough" cluster. We focus on three types of molecular chains that we cut from crystal structures; furthermore, we explore reasonable substitutional variants in silico. We find evidence of cooperativity in chains of halogen cyanides and also in similar chalcogen- and pnictogen-bonded systems; the bonds, in the most extreme cases, are amplified through cooperative effects by 79% (I···N), 90% (Te···N), and 103% (Sb···N). Two experimentally known organic crystals, albeit with similar atomic connectivity and XB characteristics, show signs of cooperativity in one case but not in another. Finally, no cooperativity is observed in alternating halogen/acetone and halogen/1,4-dioxane chains; in fact, these XBs weaken each other by up to 26% compared to the respective gas-phase dimers.

Nitrogen and silicon fertilization of upland rice Adubação nitrogenada e silicatada do arroz de terras altas

Directory of Open Access Journals (Sweden)

Munir Mauad

2003-12-01

Full Text Available Silicon is not considered an essential element for plant development and growth, but its absorption brings several benefits to some crops, especially rice, by increasing cellular wall thickness, providing mechanical resistance to the penetration of fungi, improving the opening angle of leaves and making them more erect, decreasing self-shading and increasing resistance to lodging, especially under high nitrogen rates. To evaluate the effects of nitrogen and silicon fertilization on vegetative and yield components, plant height, and yield of rice cultivar IAC 202, an experiment was carried out combining three nitrogen rates (5, 75 and 150 mg N kg-1 soil applied as urea, and four silicon rates (0, 200, 400 and 600 mg SiO2 kg-1 soil applied as calcium silicate. Trial was set up in a completely randomized design 3 ´ 4 factorial scheme, (N = 5. Nitrogen fertilization increased the number of stems and panicles per square meter and the total number of spikelets, reflecting on grain productivity. Excessive tillering caused by inadequate nitrogen fertilization reduced the percentage of fertile stalks, spikelet fertility and grain mass. Silicon fertilization reduced the number of blank spikelets per panicles and increased grain mass, but did not affect grain productivity.O silício não é considerado um elemento essencial para o crescimento e desenvolvimento das plantas, entretanto, sua absorção traz inúmeros benefícios, principalmente ao arroz, como aumento da espessura da parede celular, conferindo resistência mecânica a penetração de fungos, melhora o ângulo de abertura das folhas tornando-as mais eretas, diminuindo o auto-sombreamento e aumentando a resistência ao acamamento, especialmente sob altas doses de nitrogênio. O presente trabalho teve por objetivo avaliar os efeitos da adubação nitrogenada e silicatada nos componentes vegetativos, nos componentes da produção, na altura da planta e na produtividade da cultivar de arroz IAC

Corrosion of silicon nitride in high temperature alkaline solutions

Energy Technology Data Exchange (ETDEWEB)

Qiu, Liyan, E-mail: liyan.qiu@cnl.ca; Guzonas, Dave A.; Qian, Jing

2016-08-01

The corrosion of silicon nitride (Si{sub 3}N{sub 4}) in alkaline solutions was studied at temperatures from 60 to 300 °C. Si{sub 3}N{sub 4} experienced significant corrosion above 100 °C. The release rates of silicon and nitrogen follow zero order reaction kinetics and increase with increasing temperature. The molar ratio of dissolved silicon and nitrogen species in the high temperature solutions is the same as that in the solid phase (congruent dissolution). The activation energy for silicon and nitrogen release rates is 75 kJ/mol which agrees well with that of silica dissolution. At 300 °C, the release of aluminum is observed and follows first order reaction kinetics while other minor constituents including Ti and Y are highly enriched on the corrosion films due to the low solubility of their oxides.

The Dominant Role of Chalcogen Bonding in the Crystal Packing of 2D/3D Aromatics

Czech Academy of Sciences Publication Activity Database

Fanfrlík, Jindřich; Přáda, A.; Padělková, Z.; Pecina, Adam; Macháček, Jan; Lepšík, Martin; Holub, Josef; Růžička, A.; Hnyk, Drahomír; Hobza, Pavel

2014-01-01

Roč. 53, č. 38 (2014), s. 10139-10142 ISSN 1433-7851 R&D Projects: GA ČR GBP208/12/G016; GA ČR GAP208/10/2269 Grant - others:GA MŠk(CZ) ED2.1.00/03.0058; GA MŠk(CZ) ED1.1.00/02.0070; GA MŠk(CZ) LM2011033 Program:ED; ED Institutional support: RVO:61388963 ; RVO:61388980 Keywords : boranes * chalcogen bonds * crystal structures * sulfur * X-ray diffraction Subject RIV: CF - Physical ; Theoretical Chemistry Impact factor: 11.261, year: 2014

Depth distribution of nitrogen in silicon from plasma ion implantation

International Nuclear Information System (INIS)

Vajo, J.J.; Williams, J.D.; Wei, R.; Wilson, R.G.; Matossian, J.N.

1994-01-01

Plasma Ion Implantation (PII) is an ion implantation technique that eliminates the line-of-sight restriction of conventional ion-beam implantation and therefore allows for cost effective surface modification of large-scale objects or large-number of small-scale objects. In PII, a part to be implanted is immersed in a low-pressure (10 -4 --10 -5 Torr), partially-ionized plasma that surrounds the part with a plasma sheath. The part is negatively pulse biased up to 100 keV using a repetitive train (100--1,000 Hz) of short-duration (10--40 μsec) voltage pulses. The applied voltage develops across the sheath and accelerates plasma ions into the surface, implanting them omnidirectionally and simultaneously over the entire surface of the part. The depth distribution of the implanted ions influences the extent and type of surface modification achieved and depends upon many factors. These include three rise and fall time of the voltage-pulse waveform, the voltage-pulse amplitude, the ion specie, the ion density, and the temperature of the target. Understanding the contributions to the depth distribution from each of these factors will enable prediction of conditions that will be useful for implantation of large complex parts. To investigate the contributions to the measured depth distributions from these factors nitrogen, predominantly as N + 2 , has been implanted into silicon using PII at 50 and 100 keV (25 and 50 keV per N atom). The implanted depth distributions have been determined using secondary ion mass spectroscopy and Auger electron spectroscopy depth profiling. The distributions differ from the typical, approximately Gaussian, profiles that result from conventional mass selected monoenergetic ion beam implantation. In comparison with ion beam implants and numerical simulations the profiles appear ''filled-in'' with an approximately constant nitrogen concentration for depths less than the expected average ion range

First-principles studies of a photovoltaic material based on silicon heavily codoped with sulfur and nitrogen

Science.gov (United States)

Dong, Xiao; Wang, Yongyong; Song, Xiaohui; Yang, Feng

2018-03-01

In silicon co-hyperdoped with nitrogen and sulfur, dopant atoms tend to form dimers in the near-equilibrium process. The dimer that contains substitutional N and S atoms has the lowest formation energy and can form an impurity band that overlaps with the conduction band (CB). When separating the two atoms far apart from each other, the impurity band is clearly isolated from the CB and becomes an intermediate band (IB). The sub-band-gap absorption decreases with the decrease in the substitutional atom distance. The sub-band-gap absorption of the material is the combined effect of the configurations with different N-S distances.

Production of electronic grade lunar silicon by disproportionation of silicon difluoride

Science.gov (United States)

Agosto, William N.

1993-01-01

Waldron has proposed to extract lunar silicon by sodium reduction of sodium fluorosilicate derived from reacting sodium fluoride with lunar silicon tetrafluoride. Silicon tetrafluoride is obtained by the action of hydrofluoric acid on lunar silicates. While these reactions are well understood, the resulting lunar silicon is not likely to meet electronic specifications of 5 nines purity. Dale and Margrave have shown that silicon difluoride can be obtained by the action of silicon tetrafluoride on elemental silicon at elevated temperatures (1100-1200 C) and low pressures (1-2 torr). The resulting silicon difluoride will then spontaneously disproportionate into hyperpure silicon and silicon tetrafluoride in vacuum at approximately 400 C. On its own merits, silicon difluoride polymerizes into a tough waxy solid in the temperature range from liquid nitrogen to about 100 C. It is the silicon analog of teflon. Silicon difluoride ignites in moist air but is stable under lunar surface conditions and may prove to be a valuable industrial material that is largely lunar derived for lunar surface applications. The most effective driver for lunar industrialization may be the prospects for industrial space solar power systems in orbit or on the moon that are built with lunar materials. Such systems would require large quantities of electronic grade silicon or compound semiconductors for photovoltaics and electronic controls. Since silicon is the most abundant semimetal in the silicate portion of any solar system rock (approximately 20 wt percent), lunar silicon production is bound to be an important process in such a solar power project. The lunar silicon extraction process is discussed.

Stressing effects on the charge trapping of silicon oxynitride prepared by thermal oxidation of LPCVD Si-rich silicon nitride

International Nuclear Information System (INIS)

Choi, H.Y.; Wong, H.; Filip, V.; Sen, B.; Kok, C.W.; Chan, M.; Poon, M.C.

2006-01-01

It was recently found that the silicon oxynitride prepared by oxidation of silicon-rich silicon nitride (SRN) has several important features. The high nitrogen and extremely low hydrogen content of this material allows it to have a high dielectric constant and a low trap density. The present work investigates in further detail the electrical reliability of this kind of gate dielectric films by studying the charge trapping and interface state generation induced by constant current stressing. Capacitance-voltage (C-V) measurements indicate that for oxidation temperatures of 850 and 950 deg. C, the interface trap generation is minimal because of the high nitrogen content at the interface. At a higher oxidation temperature of 1050 deg. C, a large flatband shift is found for constant current stressing. This observation can be explained by the significant reduction of the nitrogen content and the phase separation effect at this temperature as found by X-ray photoelectron spectroscopy study. In addition to the high nitrogen content, the Si atoms at the interface exist in the form of random bonding to oxygen and nitrogen atoms for samples oxidized at 850 and 950 deg. C. This structure reduces the interface bonding constraint and results in the low interface trap density. For heavily oxidized samples the trace amount of interface nitrogen atoms exist in the form of a highly constraint SiN 4 phase and the interface oxynitride layer is a random mixture of SiO 4 and SiN 4 phases, which consequently reduces the reliability against high energy electron stressing

Increased carrier lifetimes in epitaxial silicon layers on buried silicon nitride produced by ion implantation

International Nuclear Information System (INIS)

Skorupa, W.; Kreissig, U.; Hensel, E.; Bartsch, H.

1984-01-01

Carrier lifetimes were measured in epitaxial silicon layers deposited on buried silicon nitride produced by high-dose nitrogen implantation at 330 keV. The values were in the range 20-200 μs. The results are remarkable taking into account the high density of crystal defects in the epitaxial layers. Comparing with other SOI technologies the measured lifetimes are higher by 1-2 orders of magnitude. (author)

Synthesis of 1,3-bis(organylchalcogeno)propanes and 1,2-dichalcogenolanes having different chalcogen atoms in the molecule; Sintez 1,3-bis(organilkhal'kogeno)propanov i 1,2-dikhal'kogenolanov s razlichnymi atomami khal'kogenov v molekule

Energy Technology Data Exchange (ETDEWEB)

Elaev, A V; Grabel' nykh, V A; Russavskaya, N V; Klyba, L V; Zhanchipova, E R; Levanova, E P; Sukhomazova, Eh N; Albanov, A I; Mamaseva, T V; Korchevin, N A [SO RAN, Irkutskij Inst. Khimii im. A.E. Favorskogo, Irkutsk (Russian Federation)

2007-01-15

Oligomeric trimethylene dichalcogenides and the corresponding 1,2-dichalcogenolanes having both similar and different chalcogen atoms in the molecule were synthesized by reactions of 1-bromo-3-chloropropanes with two elemental chalcogens (S, Se; S, Te; Se, Te) activated by the system hydrazine hydrate-alkali. Reductive cleavage of the oligomeric products in the system hydrazine hydrate-alkali, followed by alkylation with methyl io or ethyl bromide gave 1,3-bis(alkylchalcogeno)propanes. The latter were also obtained from the corresponding dialkyl dichalcogenides and 1-bromo-3-chloropropane in the alkaline reducing systemRuss.

Growth, Carbon Isotope Discrimination and Nitrogen Uptake in Silicon and/or Potassium Fed barley Grown under Two Watering Regimes

OpenAIRE

Kurdali, Fawaz; Al-Chammaa, Mohammad

2013-01-01

The present pot experiment was an attempt to monitor the beneficial effects of silicon (Si) and/or potassium (K) applications on growth and nitrogen uptake in barley plants grown under water (FC1) and non water (FC2) stress conditions using 15N and 13C isotopes. Three fertilizer rates of Si (Si 50, Si 100 and Si 200) and one fertilizer rate of K were used. Dry matter (DM) and N yield (NY) in different plant parts of barley plants was affected by Si and/ or K fertilization as well as by the wa...

Radiation Hardening of Silicon Detectors

CERN Multimedia

Leroy, C; Glaser, M

2002-01-01

%RD48 %title\\\\ \\\\Silicon detectors will be widely used in experiments at the CERN Large Hadron Collider where high radiation levels will cause significant bulk damage. In addition to increased leakage current and charge collection losses worsening the signal to noise, the induced radiation damage changes the effective doping concentration and represents the limiting factor to long term operation of silicon detectors. The objectives are to develop radiation hard silicon detectors that can operate beyond the limits of the present devices and that ensure guaranteed operation for the whole lifetime of the LHC experimental programme. Radiation induced defect modelling and experimental results show that the silicon radiation hardness depends on the atomic impurities present in the initial monocrystalline material.\\\\ \\\\ Float zone (FZ) silicon materials with addition of oxygen, carbon, nitrogen, germanium and tin were produced as well as epitaxial silicon materials with epilayers up to 200 $\\mu$m thickness. Their im...

Ion beam induces nitridation of silicon

International Nuclear Information System (INIS)

Petravic, M.; Williams, J.S.; Conway, M.

1998-01-01

High dose ion bombardment of silicon with reactive species, such as oxygen and nitrogen, has attracted considerable interest due to possible applications of beam-induced chemical compounds with silicon. For example, high energy oxygen bombardment of Si is now routinely used to form buried oxide layers for device purposes, the so called SIMOX structures. On the other hand, Si nitrides, formed by low energy ( 100 keV) nitrogen beam bombardment of Si, are attractive as oxidation barriers or gate insulators, primarily due to the low diffusivity of many species in Si nitrides. However, little data exists on silicon nitride formation during bombardment and its angle dependence, in particular for N 2 + bombardment in the 10 keV range, which is of interest for analytical techniques such as SIMS. In SIMS, low energy oxygen ions are more commonly used as bombarding species, as oxygen provides stable ion yields and enhances the positive secondary ion yield. Therefore, a large body of data can be found in the literature on oxide formation during low energy oxygen bombardment. Nitrogen bombardment of Si may cause similar effects to oxygen bombardment, as nitrogen and oxygen have similar masses and ranges in Si, show similar sputtering effects and both have the ability to form chemical compounds with Si. In this work we explore this possibility in some detail. We compare oxide and nitride formation during oxygen and nitrogen ion bombardment of Si under similar conditions. Despite the expected similar behaviour, some large differences in compound formation were found. These differences are explained in terms of different atomic diffusivities in oxides and nitrides, film structural differences and thermodynamic properties. (author)

Bonding silicon nitride using glass-ceramic

International Nuclear Information System (INIS)

Dobedoe, R.S.

1995-01-01

Silicon nitride has been successfully bonded to itself using magnesium-aluminosilicate glass and glass-ceramic. For some samples, bonding was achieved using a diffusion bonder, but in other instances, following an initial degassing hold, higher temperatures were used in a nitrogen atmosphere with no applied load. For diffusion bonding, a small applied pressure at a temperature below which crystallisation occurs resulted in intimate contact. At slightly higher temperatures, the extent of the reaction at the interface and the microstructure of the glass-ceramic joint was highly sensitive to the bonding temperature. Bonding in a nitrogen atmosphere resulted in a solution-reprecipitation reaction. A thin layer of glass produced a ''dry'', glass-free joint, whilst a thicker layer resulted in a continuous glassy join across the interface. The chromium silicide impurities within the silicon nitride react with the nucleating agent in the glass ceramic, which may lead to difficulty in producing a fine glass-ceramic microstructure. Slightly lower temperatures in nitrogen resulted in a polycrystalline join but the interfacial contact was poor. It is hoped that one of the bonds produced may be developed to eventually form part of a graded joint between silicon nitride and a high temperature nickel alloy. (orig.)

A New Understanding of Near-Threshold Damage for 200 keV Irradiation In Silicon

International Nuclear Information System (INIS)

Stoddard, Nathan; Duscher, Gerd J.M.; Windl, Wolfgang; Rozgonyi, G.A.

2005-01-01

Recently we reported room temperature point defect creation and subsequent extended defect nucleation in nitrogen-doped silicon during 200 kV electron irradiation, while identical irradiation of nitrogen-free silicon produced no effect. In this paper, first principles calculations are combined with new transmission electron microscope (TEM) observations to support a new model for elastic electron-silicon interactions in the TEM, which encompasses both nitrogen doped and nitrogen free silicon. Specifically, the nudged elastic band method was used to study the energetics along the diffusion path during an electron collision event in the vicinity of a nitrogen pair. It was found that the 0 K estimate for the energy barrier of a knock-on event is lowered from ∼12 to 6.2 eV. However, this is still inadequate to explain the observations. We therefore propose an increase in the energy barrier for Frenkel pair recombination associated with N 2 -V bonding. Concerning pure silicon, stacking fault formation near irradiation-induced holes demonstrates the participation of bulk processes. In low oxygen float zone material, 2--5 nm voids were formed, while oxygen precipitation in Czochralski Si has been verified by electron energy-loss spectroscopy. Models of irradiation-induced point defect aggregation are presented and it is concluded that these must be bulk and not surface mediated phenomena.

Thermogravimetric analysis of silicon carbide-silicon nitride polycarbosilazane precursor during pyrolysis from ambient to 1000 C

Science.gov (United States)

Ledbetter, F. E., III; Daniels, J. G.; Clemons, J. M.; Hundley, N. H.; Penn, B. G.

1984-01-01

Thermogravimetric analysis data are presented on the unmeltable polycarbosilazane precursor of silicon carbide-silicon nitride fibers, over the room temperature-1000 C range in a nitrogen atmosphere, in order to establish the weight loss at various temperatures during the precursor's pyrolysis to the fiber material. The fibers obtained by this method are excellent candidates for use in applications where the oxidation of carbon fibers (above 400 C) renders them unsuitable.

Electron and ion beam degradation effects in AES analysis of silicon nitride thin films

International Nuclear Information System (INIS)

Fransen, F.; Vanden Berghe, R.; Vlaeminck, R.; Hinoul, M.; Remmerie, J.; Maes, H.E.

1985-01-01

Silicon nitride films are currently investigated by AES combined with ion profiling techniques for their stoichiometry and oxygen content. During this analysis, ion beam and primary electron effects were observed. The effect of argon ion bombardment is the preferential sputtering of nitrogen, forming 'covalent' silicon at the surface layer (AES peak at 91 eV). The electron beam irradiation results in a decrease of the covalent silicon peak, either by an electron beam annealing effect in the bulk of the silicon nitride film, or by an ionization enhanced surface diffusion process of the silicon (electromigration). By the electron beam annealing, nitrogen species are liberated in the bulk of the silicon nitride film and migrate towards the surface where they react with the covalent silicon. The ionization enhanced diffusion originates from local charging of the surface, induced by the electron beam. (author)

Silicon (100)/SiO2 by XPS

Energy Technology Data Exchange (ETDEWEB)

Jensen, David S.; Kanyal, Supriya S.; Madaan, Nitesh; Vail, Michael A.; Dadson, Andrew; Engelhard, Mark H.; Linford, Matthew R.

2013-09-25

Silicon (100) wafers are ubiquitous in microfabrication and, accordingly, their surface characteristics are important. Herein, we report the analysis of Si (100) via X-ray photoelectron spectroscopy (XPS) using monochromatic Al K radiation. Survey scans show that the material is primarily silicon and oxygen, and the Si 2p region shows two peaks that correspond to elemental silicon and silicon dioxide. Using these peaks the thickness of the native oxide (SiO2) was estimated using the equation of Strohmeier.1 The oxygen peak is symmetric. The material shows small amounts of carbon, fluorine, and nitrogen contamination. These silicon wafers are used as the base material for subsequent growth of templated carbon nanotubes.

Oxidation-enhanced diffusion of boron in very low-energy N2+-implanted silicon

Science.gov (United States)

Skarlatos, D.; Tsamis, C.; Perego, M.; Fanciulli, M.

2005-06-01

In this article we study the interstitial injection during oxidation of very low-energy nitrogen-implanted silicon. Buried boron δ layers are used to monitor the interstitial supersaturation during the oxidation of nitrogen-implanted silicon. No difference in boron diffusivity enhancement was observed compared to dry oxidation of nonimplanted samples. This result is different from our experience from N2O oxynitridation study, during which a boron diffusivity enhancement of the order of 20% was observed, revealing the influence of interfacial nitrogen on interstitial kinetics. A possible explanation may be that implanted nitrogen acts as an excess interstitial sink in order to diffuse towards the surface via a non-Fickian mechanism. This work completes a wide study of oxidation of very low-energy nitrogen-implanted silicon related phenomena we performed within the last two years [D. Skarlatos, C. Tsamis, and D. Tsoukalas, J. Appl. Phys. 93, 1832 (2003); D. Skarlatos, E. Kapetanakis, P. Normand, C. Tsamis, M. Perego, S. Ferrari, M. Fanciulli, and D. Tsoukalas, J. Appl. Phys. 96, 300 (2004)].

Infrared defect dynamics—Nitrogen-vacancy complexes in float zone grown silicon introduced by electron irradiation

Science.gov (United States)

Inoue, Naohisa; Kawamura, Yuichi

2018-05-01

The interaction of nitrogen and intrinsic point defects, vacancy (V) and self-interstitial (I), was examined by infrared absorption spectroscopy on the electron irradiated and post-annealed nitrogen doped float zone (FZ) silicon crystal. Various absorption lines were observed, at 551 cm-1 in as-grown samples, at 726 and 778 cm-1 in as-irradiated samples (Ir group), at 689 cm-1 after post-annealing at 400 °C and above (400 °C group), at 762 and 951 cm-1 after annealing at 600 °C (600 °C group), and at 714 cm-1 up to 800 °C (800 °C group). By irradiation, a part of N2 was changed into the Ir group. VN2 is the candidate for the origin of the Ir group. By the post annealing at 400 and 600 °C, a part of N2 and the Ir group were changed into the 400 °C group, to less extent at 600 °C. V2N2 is the candidate for the origin of the 400 °C group. By annealing at 600 °C, most of the Ir group turned into 400 °C and 600 °C groups. By annealing at 800 °C, N2 recovered almost completely, and most other complexes were not observed. Recently, lifetime degradation has been observed in the nitrogen doped FZ Si annealed at between 450 and 800 °C. The N-V interaction in the same temperature range revealed here will help to understand the lifetime degradation mechanism. The behavior of the 689 cm-1 line corresponded well to the lifetime degradation.

One-step synthesis of 3D sulfur/nitrogen dual-doped graphene supported nano silicon as anode for Li-ion batteries

Science.gov (United States)

Li, Ruihong; Li, Junli; Qi, Kaiyu; Ge, Xin; Zhang, Qiwei; Zhang, Bangwen

2018-03-01

Silicon is one of the most promising candidates for next-generation anode of Lithium-ion batteries. However, poor electrical conductivity and large volume change during alloying/dealloying hinder its practical use. Here we reported a three-dimensional (3D) nitrogen and sulfur codoped graphene supported silicon nanoparticles composite (SN-G/Si) through one-step hydrothermal self-assembly. The obtained SN-G/Si was investigated in term of instrumental characterizations and electrochemical properties. The results show that SN-G/Si as a freestanding anode in LIBs delivers a reversible capacity of 2020 mAh g-1 after 100 cycles with coulombic efficiency of nearly 97%. The excellent electrochemical performance is associated with the unique structure and the synergistic effect of SN-G/Si, in which SN-G provides volume buffer for nano Si as the flexible loader, short paths/fast channels for electron/Li ion transport as porous skeleton, and low charge-transfer resistance.

Fulltext PDF

Indian Academy of Sciences (India)

Synthesis of nanocrystalline TiO2 by tartarate gel method. 487. Chalcogen ... Diffusion. Immobilization of industrial waste in cement–bentonite clay matrix. 175 ... Fabrication of silicon based glass fibres for optical commu- nication. 73.

Layer-by-layer composition and structure of silicon subjected to combined gallium and nitrogen ion implantation for the ion synthesis of gallium nitride

Energy Technology Data Exchange (ETDEWEB)

Korolev, D. S.; Mikhaylov, A. N.; Belov, A. I.; Vasiliev, V. K.; Guseinov, D. V.; Okulich, E. V. [Nizhny Novgorod State University (Russian Federation); Shemukhin, A. A. [Moscow State University, Skobeltsyn Institute of Nuclear Physics (Russian Federation); Surodin, S. I.; Nikolitchev, D. E.; Nezhdanov, A. V.; Pirogov, A. V.; Pavlov, D. A.; Tetelbaum, D. I., E-mail: tetelbaum@phys.unn.ru [Nizhny Novgorod State University (Russian Federation)

2016-02-15

The composition and structure of silicon surface layers subjected to combined gallium and nitrogen ion implantation with subsequent annealing have been studied by the X-ray photoelectron spectroscopy, Rutherford backscattering, electron spin resonance, Raman spectroscopy, and transmission electron microscopy techniques. A slight redistribution of the implanted atoms before annealing and their substantial migration towards the surface during annealing depending on the sequence of implantations are observed. It is found that about 2% of atoms of the implanted layer are replaced with gallium bonded to nitrogen; however, it is impossible to detect the gallium-nitride phase. At the same time, gallium-enriched inclusions containing ∼25 at % of gallium are detected as candidates for the further synthesis of gallium-nitride inclusions.

Nanopores creation in boron and nitrogen doped polycrystalline graphene: A molecular dynamics study

Science.gov (United States)

Izadifar, Mohammadreza; Abadi, Rouzbeh; Nezhad Shirazi, Ali Hossein; Alajlan, Naif; Rabczuk, Timon

2018-05-01

In the present paper, molecular dynamic simulations have been conducted to investigate the nanopores creation on 10% of boron and nitrogen doped polycrystalline graphene by silicon and diamond nanoclusters. Two types of nanoclusters based on silicon and diamond are used to investigate their effect for the fabrication of nanopores. Therefore, three different diameter sizes of the clusters with five kinetic energies of 10, 50, 100, 300 and 500 eV/atom at four different locations in boron or nitrogen doped polycrystalline graphene nanosheets have been perused. We also study the effect of 3% and 6% of boron doped polycrystalline graphene with the best outcome from 10% of doping. Our results reveal that the diamond cluster with diameter of 2 and 2.5 nm fabricates the largest nanopore areas on boron and nitrogen doped polycrystalline graphene, respectively. Furthermore, the kinetic energies of 10 and 50 eV/atom can not fabricate nanopores in some cases for silicon and diamond clusters on boron doped polycrystalline graphene nanosheets. On the other hand, silicon and diamond clusters fabricate nanopores for all locations and all tested energies on nitrogen doped polycrystalline graphene. The area sizes of nanopores fabricated by silicon and diamond clusters with diameter of 2 and 2.5 nm are close to the actual area size of the related clusters for the kinetic energy of 300 eV/atom in all locations on boron doped polycrystalline graphene. The maximum area and the average maximum area of nanopores are fabricated by the kinetic energy of 500 eV/atom inside the grain boundary at the center of the nanosheet and in the corner of nanosheet with diameters of 2 and 3 nm for silicon and diamond clusters on boron and nitrogen doped polycrystalline graphene.

Double stabilization of nanocrystalline silicon: a bonus from solvent

Energy Technology Data Exchange (ETDEWEB)

Kolyagin, Y. G.; Zakharov, V. N.; Yatsenko, A. V.; Paseshnichenko, K. A.; Savilov, S. V.; Aslanov, L. A., E-mail: aslanov.38@mail.ru [Lomonosov Moscow State University (Russian Federation)

2016-01-15

Double stabilization of the silicon nanocrystals was observed for the first time by {sup 29}Si and {sup 13}C MAS NMR spectroscopy. The role of solvent, 1,2-dimethoxyethane (glyme), in formation and stabilization of silicon nanocrystals as well as mechanism of modification of the surface of silicon nanocrystals by nitrogen-heterocyclic carbene (NHC) was studied in this research. It was shown that silicon nanocrystals were stabilized by the products of cleavage of the C–O bonds in ethers and similar compounds. The fact of stabilization of silicon nanoparticles with NHC ligands in glyme was experimentally detected. It was demonstrated that MAS NMR spectroscopy is rather informative for study of the surface of silicon nanoparticles but it needs very pure samples.

Nitrogen Control in VIM Melts

Science.gov (United States)

Jablonski, P. D.; Hawk, J. A.

NETL has developed a design and control philosophy for the addition of nitrogen to austenitic and ferritic steels. The design approach uses CALPHAD as the centerpiece to predict the level to which nitrogen is soluble in both the melt and the solid. Applications of this technique have revealed regions of "exclusion" in which the alloy, while within specification limits of prescribed, cannot be made by conventional melt processing. Furthermore, other investigations have found that substantial retrograde solubility of nitrogen exists, which can become problematic during subsequent melt processing and/or other finishing operations such as welding. Additionally, the CALPHAD method has been used to adjust primary melt conditions. To that end, nitrogen additions have been made using chrome nitride, silicon nitride, high-nitrogen ferrochrome as well as nitrogen gas. The advantages and disadvantages of each approach will be discussed and NETL experience in this area will be summarized with respect to steel structure.

Ab initio and DFT studies of the interaction between carbonyl and thiocarbonyl groups: the role of S center dot center dot center dot O chalcogen bonds

Czech Academy of Sciences Publication Activity Database

Zierkiewicz, W.; Fanfrlík, Jindřich; Hobza, Pavel; Michalska, D.; Zeegers-Huyskens, T.

2016-01-01

Roč. 135, č. 9 (2016), č. článku 217. ISSN 1432-881X R&D Projects: GA ČR(CZ) GBP208/12/G016 Institutional support: RVO:61388963 Keywords : chalcogen bonds * carbonyl and thiocarbonyl groups * CCSD(T) * DFT Subject RIV: CF - Physical ; Theoretical Chemistry Impact factor: 1.890, year: 2016 http://link.springer.com/article/10.1007%2Fs00214-016-1972-z

Improvement in switching characteristics and long-term stability of Zn-O-N thin-film transistors by silicon doping

Directory of Open Access Journals (Sweden)

Hiroshi Tsuji

2017-06-01

Full Text Available The effects of silicon doping on the properties of Zn-O-N (ZnON films and on the device characteristics of ZnON thin-film transistors (TFTs were investigated by co-sputtering silicon and zinc targets. Silicon doping was effective at decreasing the carrier concentration in ZnON films; therefore, the conductivity of the films can be controlled by the addition of a small amount of silicon. Doped silicon atoms also form bonds with nitrogen atoms, which suppresses nitrogen desorption from the films. Furthermore, Si-doped ZnON-TFTs are demonstrated to exhibit less negative threshold voltages, smaller subthreshold swings, and better long-term stability than non-doped ZnON-TFTs.

Shrinking of silicon nanocrystals embedded in an amorphous silicon oxide matrix during rapid thermal annealing in a forming gas atmosphere

Science.gov (United States)

van Sebille, M.; Fusi, A.; Xie, L.; Ali, H.; van Swaaij, R. A. C. M. M.; Leifer, K.; Zeman, M.

2016-09-01

We report the effect of hydrogen on the crystallization process of silicon nanocrystals embedded in a silicon oxide matrix. We show that hydrogen gas during annealing leads to a lower sub-band gap absorption, indicating passivation of defects created during annealing. Samples annealed in pure nitrogen show expected trends according to crystallization theory. Samples annealed in forming gas, however, deviate from this trend. Their crystallinity decreases for increased annealing time. Furthermore, we observe a decrease in the mean nanocrystal size and the size distribution broadens, indicating that hydrogen causes a size reduction of the silicon nanocrystals.

Charge trapping and carrier transport mechanism in silicon-rich silicon oxynitride

International Nuclear Information System (INIS)

Yu Zhenrui; Aceves, Mariano; Carrillo, Jesus; Lopez-Estopier, Rosa

2006-01-01

The charge-trapping and carrier transport properties of silicon-rich silicon oxynitride (SRO:N) were studied. The SRO:N films were deposited by low pressure chemical vapor deposition. Infrared (IR) and transmission electron microscopic (TEM) measurements were performed to characterize their structural properties. Capacitance versus voltage and current versus voltage measurements (I-V) were used to study the charge-trapping and carrier transport mechanism. IR and TEM measurements revealed the existence of Si nanodots in SRO:N films. I-V measurements revealed that there are two conduction regimes divided by a threshold voltage V T . When the applied voltage is smaller than V T , the current is dominated by the charge transfer between the SRO:N and substrate; and in this regime only dynamic charging/discharging of the SRO:N layer is observed. When the voltage is larger than V T , the current increases rapidly and is dominated by the Poole-Frenkel mechanism; and in this regime, large permanent trapped charge density is obtained. Nitrogen incorporation significantly reduced the silicon nanodots or defects near the SRO:N/Si interface. However, a significant increase of the density of silicon nanodot in the bulk of the SRO:N layer is obtained

Structural behaviour of nitrogen in oxide ceramics

International Nuclear Information System (INIS)

Ghauri, K.M.

1997-01-01

The solubility of nitrogen in molten oxides has significant consideration for two quite different types of engineering materials. The implication of a knowledge of the role of nitrogen in these oxides for refining high nitrogen steels in obvious but similar nitrogen-bearing oxide melts are of critical importance in the densification of silicon nitride ceramics. Present paper discusses structural behaviour and phase equilibria qualitatively in the light of knowledge available on slag structure through infrared and x-ray diffraction. Nitrogen solubility in glasses and related sialon based ceramics may be of paramount importance to understand the role of nitrogen in these materials as these oxides are similar in composition, structure and characteristics to sintering glasses in nitrogen ceramics. It is quite logical to infer that the same oxide model can be applied in order to massively produce nitrogen alloyed steels which are actively competing to be the materials of the next century. (author)

Optical and passivating properties of hydrogenated amorphous silicon nitride deposited by plasma enhanced chemical vapour deposition for application on silicon solar cells

Energy Technology Data Exchange (ETDEWEB)

Wight, Daniel Nilsen

2008-07-01

quality, etch rate. The response of these parameters to high temperature anneals were correlated with structural changes in the silicon nitride films as measured by using the hydrogen bond concentration. Plasma enhanced chemical vapour deposition allows continuous variation in nearly all deposition parameters. The parameters studied in this work are the gas flow ratios and excitation power. In both direct and remote deposition systems, the increase in deposition power density lead to higher activation of ammonia which in turn lead to augmented incorporation of nitrogen into the films and thus lower refractive index. For a direct system, the same parameter change lead to a drastic fall in passivation quality of Czochralski silicon attributed to an increase in ion bombardment as well as the general observation that as deposited passivation tends to increase with refractive index. Silicon nitride films with variations in refractive index were also made by varying the silane-to-ammonia gas flow ratio. This simple parameter adjustment makes plasma enhanced chemical vapour deposited silicon nitride applicable to double layer anti-reflective coatings simulated in this work. The films were found to have an etch rate in 5% hydrofluoric acid that decreased with increasing refractive index. This behaviour is attributed to the decreasing concentration of nitrogen-to-hydrogen bonds in the films. Such bonds at the surface of silicon nitride have been suggested to be involved in the main reaction mechanism when etching silicon nitride in hydrofluoric acid. Annealing the films lead to a drastic fall in etch rates and was linked to the release of hydrogen from the nitrogen-hydrogen bonds. (author). 115 refs., 35 figs., 6 tabs

Growth, Carbon Isotope Discrimination and Nitrogen Uptake in Silicon and/or Potassium Fed barley Grown under Two Watering Regimes

Directory of Open Access Journals (Sweden)

Kurdali, Fawaz

2013-02-01

Full Text Available The present pot experiment was an attempt to monitor the beneficial effects of silicon (Si and/or potassium (K applications on growth and nitrogen uptake in barley plants grown under water (FC1 and non water (FC2 stress conditions using 15N and 13C isotopes. Three fertilizer rates of Si (Si50, Si100 and Si200 and one fertilizer rate of K were used. Dry matter (DM and N yield (NY in different plant parts of barley plants was affected by Si and/ or K fertilization as well as by the watering regime level under which the plants have been grown. Solely added K or in combination with adequate rate of Si (Si 100 were more effective in alleviating water stress and producing higher yield in barley plants than solely added Si. However, the latter nutrient was found to be more effective than the former in producing higher spike's N yield. Solely added Si or in combination with K significantly reduced leaves ∆13 C reflecting their bifacial effects on water use efficiency (WUE, particularly in plants grown under well watering regime. This result indicated that Si might be involved in saving water loss through reducing transpiration rate and facilitating water uptake; consequently, increasing WUE. Although the rising of soil humidity generally increased fertilizer nitrogen uptake (Ndff and its use efficiency (%NUE in barley plants, applications of K or Si fertilizers to water stressed plants resulted in significant increments of these parameters as compared with the control. Our results highlight that Si or K is not only involved in amelioration of growth of barley plants, but can also improve nitrogen uptake and fertilizer nitrogen use efficiency particularly under water deficit conditions.

Dry matter yield, carbon isotope discrimination and nitrogen uptake in silicon and/ or potassium fed chickpea and barley plants grown under water and non-water stress conditions

International Nuclear Information System (INIS)

Kurd Ali, F.; Al-Chammaa, M.; Mouasess, A.

2012-09-01

A pot experiment was conducted to study the effects of silicon (Si) and/or potassium (K) on dry matter yield, nitrogen uptake and carbon isotope discrimination Δ 13 C in water stressed (FC1) and well watered (FC2) chickpea plants using 15 N and 13 C isotopes. Three fertilizer rates of Si (Si 5 0, Si 1 00 and Si 2 00) and one fertilizer rate of K were used. The results showed that: In chickpeas, it was found, for most of the growth parameters, that Si either alone or in combination with K was more effective to alleviate water stress than K alone. Increasing soil water level from FC1 to FC2 often had a positive impact on values of most studied parameters. The Si 1 00K + (FC1) and Si 5 0K + (FC2) treatments gave high enough amounts of N 2 -fixation, higher dry matter production and greater nitrogen yield. The percent increments of total N 2 -fixed in the above mentioned treatments were 51 and 47% over their controls, respectively. On the other hand, increasing leaves dry matter in response to the solely added Si (Si 5 0K - and Si 1 00K - ) is associated with lower Δ 13 C under both watering regimes. This may indicate that Si fertilization had a beneficial effect on water use efficiency (WUE). Hence, Δ 13 C could be an adequate indicator of WUE in response to the exogenous supply of silicon to chickpea plants. Our results highlight that Si is not only involved in amelioration of growth and in maintaining of water status but it can be considered as an important element for the symbiotic performance of chickpea plants. It can be concluded that synergistic effect of silicon and potassium fertilization with adequate irrigation improves growth and nitrogen fixation in chickpea plants.In barley plants, solely added K or in combination with adequate rate of Si (Si 1 00) were more effective in alleviating water stress and producing higher yield in barley plants than solely added Si. However, the latter nutrient was found to be more effective than the former in producing

Room temperature oxidative intercalation with chalcogen hydrides: Two-step method for the formation of alkali-metal chalcogenide arrays within layered perovskites

International Nuclear Information System (INIS)

Ranmohotti, K.G. Sanjaya; Montasserasadi, M. Dariush; Choi, Jonglak; Yao, Yuan; Mohanty, Debasish; Josepha, Elisha A.; Adireddy, Shiva; Caruntu, Gabriel; Wiley, John B.

2012-01-01

Highlights: ► Topochemical reactions involving intercalation allow construction of metal chalcogenide arrays within perovskite hosts. ► Gaseous chalcogen hydrides serve as effect reactants for intercalation of sulfur and selenium. ► New compounds prepared by a two-step intercalation strategy are presented. -- Abstract: A two-step topochemical reaction strategy utilizing oxidative intercalation with gaseous chalcogen hydrides is presented. Initially, the Dion-Jacobson-type layered perovskite, RbLaNb 2 O 7 , is intercalated reductively with rubidium metal to make the Ruddlesden-Popper-type layered perovskite, Rb 2 LaNb 2 O 7 . This compound is then reacted at room-temperature with in situ generated H 2 S gas to create Rb-S layers within the perovskite host. Rietveld refinement of X-ray powder diffraction data (tetragonal, a = 3.8998(2) Å, c = 15.256(1) Å; space group P4/mmm) shows the compound to be isostructural with (Rb 2 Cl)LaNb 2 O 7 where the sulfide resides on a cubic interlayer site surrounded by rubidium ions. The mass increase seen on sulfur intercalation and the refined S site occupation factor (∼0.8) of the product indicate a higher sulfur content than expected for S 2− alone. This combined with the Raman studies, which show evidence for an H-S stretch, indicate that a significant fraction of the intercalated sulfide exists as hydrogen sulfide ion. Intercalation reactions with H 2 Se (g) were also carried out and appear to produce an isostructural selenide compound. The utilization of such gaseous hydride reagents could significantly expand multistep topochemistry to a larger number of intercalants.

Polyenergy ion beam synthesis of buried oxynitride layer in silicon

Energy Technology Data Exchange (ETDEWEB)

Barabanenkov, M.Yu. E-mail: barab@ipmt-hpm.ac.ru; Agafonov, Yu.A.; Mordkovich, V.N.; Pustovit, A.N.; Vyatkin, A.F.; Zinenko, V.I

2000-11-01

The efficiency of silicon oxynitride synthesis in silicon crystals implanted with substoichiometric doses of oxygen and nitrogen ions is investigated both experimentally and theoretically. Si crystals are implanted with oxygen and nitrogen ions with doses of 1.5 and 4.5x10{sup 17} cm{sup -2}, respectively, at fixed oxygen ion energy of 150 keV and nitrogen ion energies varied from 80 to 180 keV. The samples annealed at 1200 deg C for 2 h were analysed by secondary ion mass spectroscopy (SIMS). Theoretically, a `diffusion-alternative sinks' model is applied to the annealing stage of ion beam synthesis of a buried layer of a new phase in solids. It is shown that the maximum of the ternary phase production is attained when nitrogen ions are implanted deeper than oxygen ions. An explanation of this fact is given in terms of that (i) the segregation of oxygen and nitrogen species on the surface of oxide nuclei removes the kinetic restriction of nuclei growth, characteristic of oxide growth, at the expense of only oxygen atoms, and (ii) the higher the implantation energy the smoother the shape of ion range distribution in the target, which, in its turn, causes the predominance of the impurity sink over the impurity diffusion.

Polyenergy ion beam synthesis of buried oxynitride layer in silicon

International Nuclear Information System (INIS)

Barabanenkov, M.Yu.; Agafonov, Yu.A.; Mordkovich, V.N.; Pustovit, A.N.; Vyatkin, A.F.; Zinenko, V.I.

2000-01-01

The efficiency of silicon oxynitride synthesis in silicon crystals implanted with substoichiometric doses of oxygen and nitrogen ions is investigated both experimentally and theoretically. Si crystals are implanted with oxygen and nitrogen ions with doses of 1.5 and 4.5x10 17 cm -2 , respectively, at fixed oxygen ion energy of 150 keV and nitrogen ion energies varied from 80 to 180 keV. The samples annealed at 1200 deg C for 2 h were analysed by secondary ion mass spectroscopy (SIMS). Theoretically, a `diffusion-alternative sinks' model is applied to the annealing stage of ion beam synthesis of a buried layer of a new phase in solids. It is shown that the maximum of the ternary phase production is attained when nitrogen ions are implanted deeper than oxygen ions. An explanation of this fact is given in terms of that (i) the segregation of oxygen and nitrogen species on the surface of oxide nuclei removes the kinetic restriction of nuclei growth, characteristic of oxide growth, at the expense of only oxygen atoms, and (ii) the higher the implantation energy the smoother the shape of ion range distribution in the target, which, in its turn, causes the predominance of the impurity sink over the impurity diffusion

N-type In/sub 2/S/sub 3/ thin films prepared by gas chalcogenization of metallic electroplated indium: Photoelectrochemical characterization

Energy Technology Data Exchange (ETDEWEB)

Herrero, J; Ortega, J

1988-08-01

Chalcogenization of electroplated metallic indium films onto Ti substrates has been carried out in a flowing stream of H/sub 2/S at about 350/sup 0/C for 1 h with a pretreatment of 3 h at 130/sup 0/C. X-ray diffraction patterns showed that ..beta..-In/sub 2/S/sub 3/ thin films were grown with a good crystalline quality. Photoelectrochemical characterization of the electrodes was accomplished in aqueous polysulphide solutions, and a energy gap of 2.00 eV was obtained. The flatband potential, V/sub fb/, in the same polysulphide couple was -1.0 V versus SCE. Behaviour of the thin film photocurrent with time was checked, and a photocorrosion reaction proposed.

Plasma-enhanced growth, composition, and refractive index of silicon oxy-nitride films

DEFF Research Database (Denmark)

Mattsson, Kent Erik

1995-01-01

Secondary ion mass spectrometry and refractive index measurements have been carried out on silicon oxy-nitride produced by plasma-enhanced chemical vapor deposition (PECVD). Nitrous oxide and ammonia were added to a constant flow of 2% silane in nitrogen, to produce oxy-nitride films with atomic...... nitrogen concentrations between 2 and 10 at. %. A simple atomic valence model is found to describe both the measured atomic concentrations and published material compositions for silicon oxy-nitride produced by PECVD. A relation between the Si–N bond concentration and the refractive index is found......-product. A model, that combine the chemical net reaction and the stoichiometric rules, is found to agree with measured deposition rates for given material compositions. Effects of annealing in a nitrogen atmosphere has been investigated for the 400 °C– 1100 °C temperature range. It is observed that PECVD oxy...

Silicon oxynitride films deposited by reactive high power impulse magnetron sputtering using nitrous oxide as a single-source precursor

Energy Technology Data Exchange (ETDEWEB)

Hänninen, Tuomas, E-mail: tuoha@ifm.liu.se; Schmidt, Susann; Jensen, Jens; Hultman, Lars; Högberg, Hans [Thin Film Physics Division, Department of Physics, Chemistry, and Biology (IFM), Linköping University, Linköping SE-581 83 (Sweden)

2015-09-15

Silicon oxynitride thin films were synthesized by reactive high power impulse magnetron sputtering of silicon in argon/nitrous oxide plasmas. Nitrous oxide was employed as a single-source precursor supplying oxygen and nitrogen for the film growth. The films were characterized by elastic recoil detection analysis, x-ray photoelectron spectroscopy, x-ray diffraction, x-ray reflectivity, scanning electron microscopy, and spectroscopic ellipsometry. Results show that the films are silicon rich, amorphous, and exhibit a random chemical bonding structure. The optical properties with the refractive index and the extinction coefficient correlate with the film elemental composition, showing decreasing values with increasing film oxygen and nitrogen content. The total percentage of oxygen and nitrogen in the films is controlled by adjusting the gas flow ratio in the deposition processes. Furthermore, it is shown that the film oxygen-to-nitrogen ratio can be tailored by the high power impulse magnetron sputtering-specific parameters pulse frequency and energy per pulse.

Attenuation of Thermal Neutrons by Crystalline Silicon

International Nuclear Information System (INIS)

Adib, M.; Habib, N.; Ashry, A.; Fathalla, M.

2002-01-01

A simple formula is given which allows to calculate the contribution of the total neutron cross - section including the Bragg scattering from different (hkt) planes to the neutron * transmission through a solid crystalline silicon. The formula takes into account the silicon form of poly or mono crystals and its parameters. A computer program DSIC was developed to provide the required calculations. The calculated values of the total neutron cross-section of perfect silicon crystal at room and liquid nitrogen temperatures were compared with the experimental ones. The obtained agreement shows that the simple formula fits the experimental data with sufficient accuracy .A good agreement was also obtained between the calculated and measured values of polycrystalline silicon in the energy range from 5 eV to 500μ eV. The feasibility study on using a poly-crystalline silicon as a cold neutron filter and mono-crystalline as a thermal neutron one is given. The optimum crystal thickness, mosaic spread, temperature and cutting plane for efficiently transmitting the thermal reactor neutrons, while rejecting both fast neutrons and gamma rays accompanying the thermal ones for the mono crystalline silicon are also given

The role of nitrogen in luminescent Si nanoprecipitate formation during annealing of Si ion-implanted SiO sub 2 layers

CERN Document Server

Kachurin, G A; Zhuravlev, K S; Ruault, M O

2001-01-01

SiO sub 2 layers were implanted with 25 keV Si sup + and 13 keV N sup + ions with the doses of (1-4) x 10 sup 1 sup 6 cm sup - sup 2 and (0.2-2) x 10 sup 1 sup 6 cm sup - sup 2 , respectively. Then the samples were annealed at 900-1100 deg C to form luminescent silicon nanoprecipitates. The nitrogen effect on the process is controlled by photoluminescence spectra. It is found out that the photoluminescence intensity increases considerably at the appropriate ratio between silicon and nitrogen. It has been concluded that the interaction of nitrogen with excessive silicon results in increasing the number of precipitation centers. This raises the nanocrystals number and reduces their mean size

Ultra-shallow arsenic implant depth profiling using low-energy nitrogen beams

International Nuclear Information System (INIS)

Fearn, Sarah; Chater, Richard; McPhail, David

2004-01-01

Sputtering of silicon by low-energy nitrogen primary ion beams has been studied by a number of authors to characterize the altered layer, ripple formation and the sputtered yields of secondary ions [Surf. Sci. 424 (1999) 299; Appl. Phys. A: Mater. Sci. Process 53 (1991) 179; Appl. Phys. Lett. 73 (1998) 1287]. This study examines the application of low-energy nitrogen primary ion beams for the possible depth profiling of ultra-shallow arsenic implants into silicon. The emphasis of this work is on the matrix silicon signals in the pre-equilibrium surface region that are used for dose calibration. Problems with these aspects of the concentration depth profiling can give significant inconsistencies well outside the error limits of the quoted dose for the arsenic implantation as independently verified by CV profiling. This occurs during depth profiling with either oxygen primary ion beams (with and without oxygen leaks) or cesium primary ion beams

Room temperature oxidative intercalation with chalcogen hydrides: Two-step method for the formation of alkali-metal chalcogenide arrays within layered perovskites

Energy Technology Data Exchange (ETDEWEB)

Ranmohotti, K.G. Sanjaya; Montasserasadi, M. Dariush; Choi, Jonglak; Yao, Yuan; Mohanty, Debasish; Josepha, Elisha A.; Adireddy, Shiva; Caruntu, Gabriel [Department of Chemistry and the Advanced Materials Research Institute, University of New Orleans, New Orleans, LA 70148-2820 (United States); Wiley, John B., E-mail: jwiley@uno.edu [Department of Chemistry and the Advanced Materials Research Institute, University of New Orleans, New Orleans, LA 70148-2820 (United States)

2012-06-15

Highlights: ► Topochemical reactions involving intercalation allow construction of metal chalcogenide arrays within perovskite hosts. ► Gaseous chalcogen hydrides serve as effect reactants for intercalation of sulfur and selenium. ► New compounds prepared by a two-step intercalation strategy are presented. -- Abstract: A two-step topochemical reaction strategy utilizing oxidative intercalation with gaseous chalcogen hydrides is presented. Initially, the Dion-Jacobson-type layered perovskite, RbLaNb{sub 2}O{sub 7}, is intercalated reductively with rubidium metal to make the Ruddlesden-Popper-type layered perovskite, Rb{sub 2}LaNb{sub 2}O{sub 7}. This compound is then reacted at room-temperature with in situ generated H{sub 2}S gas to create Rb-S layers within the perovskite host. Rietveld refinement of X-ray powder diffraction data (tetragonal, a = 3.8998(2) Å, c = 15.256(1) Å; space group P4/mmm) shows the compound to be isostructural with (Rb{sub 2}Cl)LaNb{sub 2}O{sub 7} where the sulfide resides on a cubic interlayer site surrounded by rubidium ions. The mass increase seen on sulfur intercalation and the refined S site occupation factor (∼0.8) of the product indicate a higher sulfur content than expected for S{sup 2−} alone. This combined with the Raman studies, which show evidence for an H-S stretch, indicate that a significant fraction of the intercalated sulfide exists as hydrogen sulfide ion. Intercalation reactions with H{sub 2}Se{sub (g)} were also carried out and appear to produce an isostructural selenide compound. The utilization of such gaseous hydride reagents could significantly expand multistep topochemistry to a larger number of intercalants.

Nanostructured silicon nitride from wheat and rice husks

Energy Technology Data Exchange (ETDEWEB)

Qadri, S. B.; Rath, B. B.; Gorzkowski, E. P.; Wollmershauser, J. A.; Feng, C. R. [Materials Science and Component Technology Directorate, Naval Research Laboratory, Washington, D.C. 20375 (United States)

2016-04-07

Nanoparticles, submicron-diameter tubes, and rods of Si{sub 3}N{sub 4} were synthesized from the thermal treatment of wheat and rice husks at temperatures at and above 1300 °C in a nitrogen atmosphere. The whole pattern Rietveld analysis of the observed diffraction data from treatments at 1300 °C showed the formation of only hexagonal α-phase of Si{sub 3}N{sub 4} with an R-factor of 1%, whereas samples treated at 1400 °C and above showed both α- and β-phases with an R-factor of 2%. Transmission electron microscopy showed the presence of tubes, rods, and nanoparticles of Si{sub 3}N{sub 4}. In a two-step process, where pure SiC was produced first from rice or wheat husk in an argon atmosphere and subsequently treated in a nitrogen atmosphere at 1450 °C, a nanostructured composite material having α- and β-phases of Si{sub 3}N{sub 4} combined with cubic phase of SiC was formed. The thermodynamics of the formation of silicon nitride is discussed in terms of the solid state reaction between organic matter (silica content), which is inherently present in the wheat and rice husks, with the nitrogen from the furnace atmosphere. Nanostructures of silicon nitride formed by a single direct reaction or their composites with SiC formed in a two-step process of agricultural byproducts provide an uncomplicated sustainable synthesis route for silicon nitride used in mechanical, biotechnology, and electro-optic nanotechnology applications.

Femtosecond Laser Microstructuring and Chalcogen Inclusion in Silicon

Science.gov (United States)

2011-02-12

photodetectors. The authors would like to acknowledge Dr. Hao Chen, Ariane E. Beck , Dr. Shuling Wang, and Dr. Gauri V. Karve for helpful discussions. This...2002. 3Z. Huang, J. Oh, and J. C. Campbell, Appl. Phys. Lett. 85, 2386 2004. 4Z. Huang, N. Kong, X. Guo, N. Duan, M. Liu, A. L. Beck , S. K...surfaces microstructured in air," Appl. Phys. Lett. 81, 1999-2001 (2002) [doi:10.1063/1.1504868]. [49] S. Tong, X. N. Liu, T. Gao, X. M. Baa , Y

Studies on deep electronic levels in silicon and aluminium gallium arsenide alloys

International Nuclear Information System (INIS)

Pettersson, H.

1993-01-01

This thesis reports on investigations of the electrical and optical properties of deep impurity centers, related to the transition metals (TMs) Ti, Mo, W, V and Ni, in silicon. Emission rates, capture cross sections and photoionization cross sections for these impurities were determined by means of various Junction Space Charge Techniques (JSCTs), such as Deep Level Transient Spectroscopy (DLTS), dark capacitance transient and photo capacitance transient techniques. Changes in Gibbs free energy as a function of temperature were calculated for all levels. From this temperature dependence, the changes in enthalpy and entropy involved in the electron and hole transitions were deduced. The influence of high electric fields on the electronic levels in chalcogen-doped silicon were investigated using the dark capacitance transient technique. The enhancement of the electron emission from the deep centers indicated a more complex field enhancement model than the expected Poole-Frenkel effect for coulombic potentials. The possibility to determine charge states of defects using the Poole-Frenkel effect, as often suggested, is therefore questioned. The observation of a persistent decrease of the dark conductivity due to illumination in simplified AlGaAs/GaAs high Electron Mobility Transistors (HEMTs) over the temperature range 170K< T<300K is reported. A model for this peculiar behavior, based on the recombination of electrons in the two-dimensional electron gas (2DEG) located at the AlGaAs/GaAs interface with holes generated by a two-step excitation process via the deep EL2 center in the GaAs epilayer, is put forward

Study of the main parameters involved in carbothermal reduction reaction of silica aiming to obtain silicon nitride powder

International Nuclear Information System (INIS)

Rocha, J.C. da; Greca, M.C.

1989-01-01

The influence of main parameters involved in the method of silicon nitride attainment by carbothermal reduction of silica followed by nitridation were studied in isothermal experiments of fine powder mixtures of silica and graphite in a nitrogen gas flow. The time, temperature, rate C/SiO 2 and flow of nitrogen were varied since they are the main parameters involved in this kind of reaction. The products of reaction were analysed by X-ray diffraction to identify the crystalline phases and as a result was obtained the nucleation of silicon nitride phase. Meanwhile, corroborating prior results, we verified to be difficult the progress of the reaction and the inhibition of formation of silicon carbide phase, the last one being associated to the formation of silicon nitride phase due to thermodynamic matters [pt

The Effect of Polymer Char on Nitridation Kinetics of Silicon

Science.gov (United States)

Chan, Rickmond C.; Bhatt, Ramakrishna T.

1994-01-01

Effects of polymer char on nitridation kinetics of attrition milled silicon powder have been investigated from 1200 to 1350 C. Results indicate that at and above 1250 C, the silicon compacts containing 3.5 wt percent polymer char were fully converted to Si3N4 after 24 hr exposure in nitrogen. In contrast, the silicon compacts without polymer char could not be fully converted to Si3N4 at 1350 C under similar exposure conditions. At 1250 and 1350 C, the silicon compacts with polymer char showed faster nitridation kinetics than those without the polymer char. As the polymer char content is increased, the amount of SiC in the nitrided material is also increased. By adding small amounts (approx. 2.5 wt percent) of NiO, the silicon compacts containing polymer char can be completely nitrided at 1200 C. The probable mechanism for the accelerated nitridation of silicon containing polymer char is discussed.

Amorphous silicon prepared from silane-hydrogen mixture

International Nuclear Information System (INIS)

Pietruszko, S.M.

1982-09-01

Amorphous silicon films prepared from a d.c. discharge of 10% SiH 4 - 90% H 2 mixture are found to have properties similar to those made from 100% SiH 4 . These films are found to be quite stable against prolonged light exposure. The effect of nitrogen on the properties of these films was investigated. It was found that instead of behaving as a classical donor, nitrogen introduces deep levels in the material. Field effect experiments on a-Si:H films at the bottom (film-substrate interface) and the top (film-vacuum interface) of the film are also reported. (author)

The Role of Silicon under Biotic and Abiotic Stress Conditions

Directory of Open Access Journals (Sweden)

İlkay YAVAŞ

2017-06-01

Full Text Available Biotic and abiotic stress factors can adversely affect the agricultural productivity leading to physiological and biochemical damage to crops. Therefore, the most effective way is to increase the resistance to stresses. Silicon plays a ro le in reducing the effects of abiotic and biotic stresses (drought, salt stress, disease and insect stress etc. on plants. Silicon is accumulated in the cell walls and intercellular spaces and thus it has beneficial effects on disease infestations in especially small grains. The application of silicon may reduce the effects of environmental stresses on plants while making effective use of plant nutrients such as nitrogen and phosphorous. Also, silicon may reduce the toxic effects of heavy metals in soil. I t may protect the foliage and increase light uptake and reduce respiration. Therefore, in this review, we discussed the effects of silicon on abiotic and biotic stresses in especially field crops.

Size-controlled synthesis of chalcogen and chalcogenide nanoparticles using protic ionic liquids with imidazolium cation

International Nuclear Information System (INIS)

Meenatchi, Boominathan; Renuga, Velayutham; Manikandan, Ayyar

2016-01-01

Green synthesis of selenium (chalcogen) nanoparticles (SeNPs) has been successfully attained by simple wet chemical method that involves the reaction of six different protic ionic liquids with imidazolium cations and sodium hydrogen selenide (NaHSe) in the presence of poly ethylene glycol-600 (PEG-600) as an additional stabilizer. The obtained SeNPs were characterized using UV spectral (UV), Fourier transform infra-red (FT-IR), X-ray diffraction (XRD), thermogravimetric analysis (TGA), differential thermal analysis (DTA), scanning electron microscope (SEM) with energy dispersive X-ray (EDX) and high resolution transmission electron microscope (TEM) analysis. The results illustrate that the synthesized SeNPs are spherical in shape with size ranging 19-24 nm and possess good optical property with greater band gap energy, high thermal stability up to 330 .deg. C, low melting point of 218-220 .deg. C comparing to precursor selenium. Using the synthesized SeNPs, two chalcogenides such as ZnSe and CdSe semiconductor nanoparticles were synthesized and characterized using XRD, SEM with EDX and TEM analysis. The fabricated CdSe and ZnSe nanoparticles appeared like pebble and cluster structure with particle size of 29.97 nm and 22.73 nm respectively.

Size-controlled synthesis of chalcogen and chalcogenide nanoparticles using protic ionic liquids with imidazolium cation

Energy Technology Data Exchange (ETDEWEB)

Meenatchi, Boominathan [Cauvery College for Women, Tamilnadu (India); Renuga, Velayutham [National College, Tamilnadu (India); Manikandan, Ayyar [Bharath Institute of Higher Education and Research, Bharath University, Tamilnadu (India)

2016-03-15

Green synthesis of selenium (chalcogen) nanoparticles (SeNPs) has been successfully attained by simple wet chemical method that involves the reaction of six different protic ionic liquids with imidazolium cations and sodium hydrogen selenide (NaHSe) in the presence of poly ethylene glycol-600 (PEG-600) as an additional stabilizer. The obtained SeNPs were characterized using UV spectral (UV), Fourier transform infra-red (FT-IR), X-ray diffraction (XRD), thermogravimetric analysis (TGA), differential thermal analysis (DTA), scanning electron microscope (SEM) with energy dispersive X-ray (EDX) and high resolution transmission electron microscope (TEM) analysis. The results illustrate that the synthesized SeNPs are spherical in shape with size ranging 19-24 nm and possess good optical property with greater band gap energy, high thermal stability up to 330 .deg. C, low melting point of 218-220 .deg. C comparing to precursor selenium. Using the synthesized SeNPs, two chalcogenides such as ZnSe and CdSe semiconductor nanoparticles were synthesized and characterized using XRD, SEM with EDX and TEM analysis. The fabricated CdSe and ZnSe nanoparticles appeared like pebble and cluster structure with particle size of 29.97 nm and 22.73 nm respectively.

Threshold stoichiometry for beam induced nitrogen depletion of SiN

International Nuclear Information System (INIS)

Timmers, H.; Weijers, T.D.M.; Elliman, R.G.; Uribasterra, J.; Whitlow, H.J.; Sarwe, E.-L.

2002-01-01

Measurements of the stoichiometry of silicon nitride films as a function of the number of incident ions using heavy ion elastic recoil detection (ERD) show that beam-induced nitrogen depletion depends on the projectile species, the beam energy, and the initial stoichiometry. A threshold stoichiometry exists in the range 1.3>N/Si≥1, below which the films are stable against nitrogen depletion. Above this threshold, depletion is essentially linear with incident fluence. The depletion rate correlates non-linearly with the electronic energy loss of the projectile ion in the film. Sufficiently long exposure of nitrogen-rich films renders the mechanism, which prevents depletion of nitrogen-poor films, ineffective. Compromising depth-resolution, nitrogen depletion from SiN films during ERD analysis can be reduced significantly by using projectile beams with low atomic numbers

Influence of Chemical Composition and Structure in Silicon Dielectric Materials on Passivation of Thin Crystalline Silicon on Glass.

Science.gov (United States)

Calnan, Sonya; Gabriel, Onno; Rothert, Inga; Werth, Matteo; Ring, Sven; Stannowski, Bernd; Schlatmann, Rutger

2015-09-02

In this study, various silicon dielectric films, namely, a-SiOx:H, a-SiNx:H, and a-SiOxNy:H, grown by plasma enhanced chemical vapor deposition (PECVD) were evaluated for use as interlayers (ILs) between crystalline silicon and glass. Chemical bonding analysis using Fourier transform infrared spectroscopy showed that high values of oxidant gases (CO2 and/or N2), added to SiH4 during PECVD, reduced the Si-H and N-H bond density in the silicon dielectrics. Various three layer stacks combining the silicon dielectric materials were designed to minimize optical losses between silicon and glass in rear side contacted heterojunction pn test cells. The PECVD grown silicon dielectrics retained their functionality despite being subjected to harsh subsequent processing such as crystallization of the silicon at 1414 °C or above. High values of short circuit current density (Jsc; without additional hydrogen passivation) required a high density of Si-H bonds and for the nitrogen containing films, additionally, a high N-H bond density. Concurrently high values of both Jsc and open circuit voltage Voc were only observed when [Si-H] was equal to or exceeded [N-H]. Generally, Voc correlated with a high density of [Si-H] bonds in the silicon dielectric; otherwise, additional hydrogen passivation using an active plasma process was required. The highest Voc ∼ 560 mV, for a silicon acceptor concentration of about 10(16) cm(-3), was observed for stacks where an a-SiOxNy:H film was adjacent to the silicon. Regardless of the cell absorber thickness, field effect passivation of the buried silicon surface by the silicon dielectric was mandatory for efficient collection of carriers generated from short wavelength light (in the vicinity of the glass-Si interface). However, additional hydrogen passivation was obligatory for an increased diffusion length of the photogenerated carriers and thus Jsc in solar cells with thicker absorbers.

On the use of silicon as thermal neutron filter

International Nuclear Information System (INIS)

Adib, M.; Habib, N.; Ashry, A.; Fathalla, M.

2003-01-01

A simple formula is given which allows to calculate the contribution of the total neutron cross-section including the Bragg scattering from different (hkl) planes to the neutron transmission through a solid crystalline silicon. The formula takes into account the silicon form of poly or mono crystals and its parameters. A computer program DSIC was developed to provide the required calculations. The calculated values of the total neutron cross-section of perfect silicon crystal at room and liquid nitrogen temperatures were compared with the experimental ones. The obtained agreement shows that the simple formula fits the experimental data with sufficient accuracy. A good agreement was also obtained between the calculated and measured values of polycrystalline silicon in the energy range from 5 eV to 500 μeV. The feasibility study on using a poly-crystalline silicon as a cold neutron filter and mono-crystalline as a thermal neutron one is given. The optimum crystal thickness, mosaic spread, temperature and cutting plane for efficiently transmitting the thermal reactor neutrons, while rejecting both fast neutrons and gamma rays accompanying the thermal ones for the mono crystalline silicon are also given

On the use of silicon as thermal neutron filter

Energy Technology Data Exchange (ETDEWEB)

Adib, M.; Habib, N.; Ashry, A.; Fathalla, M. E-mail: mohamedfathalla@hotmail.com

2003-12-01

A simple formula is given which allows to calculate the contribution of the total neutron cross-section including the Bragg scattering from different (hkl) planes to the neutron transmission through a solid crystalline silicon. The formula takes into account the silicon form of poly or mono crystals and its parameters. A computer program DSIC was developed to provide the required calculations. The calculated values of the total neutron cross-section of perfect silicon crystal at room and liquid nitrogen temperatures were compared with the experimental ones. The obtained agreement shows that the simple formula fits the experimental data with sufficient accuracy. A good agreement was also obtained between the calculated and measured values of polycrystalline silicon in the energy range from 5 eV to 500 {mu}eV. The feasibility study on using a poly-crystalline silicon as a cold neutron filter and mono-crystalline as a thermal neutron one is given. The optimum crystal thickness, mosaic spread, temperature and cutting plane for efficiently transmitting the thermal reactor neutrons, while rejecting both fast neutrons and gamma rays accompanying the thermal ones for the mono crystalline silicon are also given.

Nitrogen concentration profiles in oxy-nitrited high-speed steel

International Nuclear Information System (INIS)

Barcz, A.; Turos, A.; Wielunski, L.

1976-01-01

Nuclear microanalysis has been applied for the determination of in-depth concentration profiles of nitrogen in oxy-nitrided high-speed steel. The concentration profiles were deduced from measurements of the nitrogen content, determined by means of the 14 N(d,α) 12 C reaction for the set of initially identical samples after the removal of surface layers of sequentially increasing thicknesses. The 1.2 MeV deuterons were obtained from the Institute of Nuclear Research Van de Graaf accelerator LECH. The α-particles produced in the 14 N(d,α) 12 C reaction were detected by means of silicon surface barrier detector mounted at 150 deg C. Strong blocking of the nitrogen diffusion due to the presence of oxygen has been observed. The accuracy of nitrogen detection is of the order of 5% for nitrogen-rich regions and 10% for the matrix. However, the local non-uniformity of the steel may cause a spread of about 20% of the measured values. (T.G.)

Electroluminescence efficiencies of erbium in silicon-based hosts

Energy Technology Data Exchange (ETDEWEB)

Cueff, Sébastien, E-mail: sebastien-cueff@brown.edu, E-mail: christophe.labbe@ensicaen.fr [Centre de Recherche sur les Ions, les Matériaux et la Photonique (CIMAP), UMR 6252 CNRS/CEA/Ensicaen/UCBN, Caen 14050 (France); School of Engineering, Brown University, Providence, Rhode Island 02912 (United States); Manel Ramírez, Joan; Berencén, Yonder; Garrido, Blas [MIND-IN2UB, Department Electrònica, Universitat de Barcelona, Martí i Franquès 1, Barcelona 08028 (Spain); Kurvits, Jonathan A.; Zia, Rashid [School of Engineering, Brown University, Providence, Rhode Island 02912 (United States); Department of Physics, Brown University, Providence, Rhode Island 02912 (United States); Rizk, Richard; Labbé, Christophe, E-mail: sebastien-cueff@brown.edu, E-mail: christophe.labbe@ensicaen.fr [Centre de Recherche sur les Ions, les Matériaux et la Photonique (CIMAP), UMR 6252 CNRS/CEA/Ensicaen/UCBN, Caen 14050 (France)

2013-11-04

We report on room-temperature 1.5 μm electroluminescence from trivalent erbium (Er{sup 3+}) ions embedded in three different CMOS-compatible silicon-based hosts: SiO{sub 2}, Si{sub 3}N{sub 4}, and SiN{sub x}. We show that although the insertion of either nitrogen or excess silicon helps enhance electrical conduction and reduce the onset voltage for electroluminescence, it drastically decreases the external quantum efficiency of Er{sup 3+} ions from 2% in SiO{sub 2} to 0.001% and 0.0004% in SiN{sub x} and Si{sub 3}N{sub 4}, respectively. Furthermore, we present strong evidence that hot carrier injection is significantly more efficient than defect-assisted conduction for the electrical excitation of Er{sup 3+} ions. These results suggest strategies to optimize the engineering of on-chip electrically excited silicon-based nanophotonic light sources.

Silicon Promotes Growth of Brassica napus L. and Delays Leaf Senescence Induced by Nitrogen Starvation

Directory of Open Access Journals (Sweden)

Cylia Haddad

2018-04-01

Full Text Available Silicon (Si is the second most abundant element in soil and has several beneficial effects, especially in plants subjected to stress conditions. However, the effect of Si in preventing nitrogen (N starvation in plants is poorly documented. The aim of this work was to study the effect of a short Si supply duration (7 days on growth, N uptake, photosynthetic activity, and leaf senescence progression in rapeseed subjected (or not to N starvation. Our results showed that after 1 week of Si supply, Si improves biomass and increases N uptake and root expression of a nitrate transporter gene. After 12 days of N starvation, compared to -Si plants, mature leaf from +Si plants showed a high chlorophyll content, a maintain of net photosynthetic activity, a decrease of oxidative stress markers [hydrogen peroxide (H2O2 and malondialdehyde (MDA] and a significant delay in senescence. When N-deprived plants were resupplied with N, a greening again associated with an increase of photosynthetic activity was observed in mature leaves of plants pretreated with Si. Moreover, during the duration of N resupply, an increase of N uptake and nitrate transporter gene expression were observed in plants pretreated with Si. In conclusion, this study has shown a beneficial role of Si to alleviate damage associated with N starvation and more especially its role in delaying of leaf senescence.

Synthesis and corrosion properties of silicon nitride films by ion beam assisted deposition

Science.gov (United States)

Baba, K.; Hatada, R.; Emmerich, R.; Enders, B.; Wolf, G. K.

1995-12-01

Silicon nitride films SiN x were deposited on 316L austenitic stainless steel substrates by silicon evaporation and simultaneous nitrogen ion irradiation with an acceleration voltage of 2 kV. In order to study the influence of the nitrogen content on changes in stoichiometry, structure, morphology, thermal oxidation behaviour and corrosion behaviour, the atom to ion transport ratio was systematically varied. The changes of binding states and the stoichiometry were evaluated with XPS and AES analysis. A maximum nitrogen content was reached with a {Si}/{N} transport ratio lower than 2. The films are chemically inert when exposed to laboratory atmosphere up to a temperature of more than 1000°C. XRD and SEM measurements show amorphous and featureless films for transport ratios {Si}/{N} from 1 up to 10. The variation of the corrosion behaviour of coated stainless steel substrates in sulphuric acid and hydrochloric acid shows a minimum at medium transport ratios. This goes parallel with changes in porosity and adhesion. Additional investigations showed that titanium implantation as an intermediate step improves the corrosion resistance considerably.

Fifth workshop on the role of impurities and defects in silicon device processing. Extended abstracts

Energy Technology Data Exchange (ETDEWEB)

Sopori, B.L.; Luque, A.; Sopori, B.; Swanson, D.; Gee, J.; Kalejs, J.; Jastrzebski, L.; Tan, T.

1995-08-01

This workshop dealt with engineering aspects and material properties of silicon electronic devices. Crystalline silicon growth, modeling, and properties are discussed in general and as applied to solar cells. Topics considered in discussions of silicon growth include: casting, string ribbons, Al backside contacts, ion implantation, gettering, passivation, and ultrasound treatments. Properties studies include: Electronic properties of defects and impurities, dopant and carrier concentrations, structure and bonding, nitrogen effects, degradation of bulk diffusion length, and recombination parameters. Individual papers from the workshop are indexed separately on the Energy Data Bases.

Computer simulation for the formation of the insulator layer of silicon-on-insulator devices by N sup + and O sup + Co-implantation

CERN Document Server

Lin Qing; Xie Xin Yun; Lin Chenglu; Liu Xiang Hua

2002-01-01

A buried sandwiched layer consisting of silicon dioxide (upper part), silicon oxynitride (medium part) and silicon nitride (lower part) is formed by N sup + and O sup + co-implantation in silicon wafers at a constant temperature of 550 degree C. The microstructure is performed by cross-sectional transmission electron microscopy. To predict the quality of the buried sandwiched layer, the authors study the computer simulation for the formation of the SIMON (separated by implantation of oxygen and nitrogen) structure. The simulation program for SIMOX (separated by implantation of oxygen) is improved in order to be applied in O sup + and N sup + co-implantation on the basis of different formation mechanism between SIMOX and SIMNI (separated by implantation of nitrogen) structures. There is a good agreement between experiment and simulation results verifying the theoretical model and presumption in the program

Formation of aluminium nitride and segregation of Cu impurity atoms in aluminium implanted by high dose nitrogen ions

International Nuclear Information System (INIS)

Lin Chenglu; Hemment, P.L.F.; Li Jinhua; Zou Shichang

1994-01-01

Aluminium films with a thickness of 7000 A (containing 0.85% copper) were deposited on silicon substrates. 400 keV N 2 + or 350 keV N + ions were implanted into the aluminium films or at the interface between the aluminium and silicon, respectively. Automatic spreading resistance (ASR), Fourier transform infrared spectroscopy (FTIR) and Rutherford backscattering (RBS) and channelling were used to characterize the formation of aluminium nitride and the depth distribution of the Cu impurity in the aluminium films after ion implantation and post-annealing. The formation of a stoichiometric AlN layer with high resistance was evident from ASR, RBS analysis and FTIR measurements by the presence of the absorption band at 650 cm -1 . When the implanted nitrogen is near the interface between the aluminium and silicon, a multilayer structure can be obtained, which consists of aluminium, aluminium nitride and the silicon substrate. Cu, which is a background impurity in the deposited aluminium films, segregated into the synthesised aluminium nitride during high dose nitrogen ion implantation. This is due to irradiation-induced segregation during ion implantation. (orig.)

Stoichiometric carbon nitride synthesized by ion beam sputtering and post nitrogen ion implantation

International Nuclear Information System (INIS)

Valizadeh, R.; Colligon, J.S.; Katardiev, I.V.; Faunce, C.A.; Donnelly, S.E.

1998-01-01

Full text: Carbon nitride films have been deposited on Si (100) by ion beam sputtering a vitreous graphite target with nitrogen and argon ions with and without concurrent N2 ion bombardment at room temperature. The sputtering beam energy was 1000 eV and the assisted beam energy was 300 eV with ion / atom arrival ratio ranging from 0.5 to 5. The carbon nitride films were deposited both as single layer directly on silicon substrate and as multilayer between two layers of stoichiometric amorphous silicon nitride and polycrystalline titanium nitride. The deposited films were implanted ex-situ with 30 keV nitrogen ions with various doses ranging from 1E17 to 4E17 ions.cm -2 and 2 GeV xenon ion with a dose of 1E12 ions.cm -2 . The nitrogen concentration of the films was measured with Rutherford Backscattering (RBS), Secondary Neutral Mass Spectrometry (SNMS) and Parallel Electron Energy Loss Spectroscopy (PEELS). The nitrogen concentration for as deposited sample was 34 at% and stoichiometric carbon nitride C 3 N 4 was achieved by post nitrogen implantation of the multi-layered films. Post bombardment of single layer carbon nitride films lead to reduction in the total nitrogen concentration. Carbon K edge structure obtained from PEELS analysis suggested that the amorphous C 3 N 4 matrix was predominantly sp 2 bonded. This was confirmed by Fourier Transforrn Infra-Red Spectroscopy (FTIR) analysis of the single CN layer which showed the nitrogen was mostly bonded with carbon in nitrile (C≡N) and imine (C=N) groups. The microstructure of the film was determined by Transmission Electron Microscopy (TEM) which indicated that the films were amorphous

Influence of LiBr on photoluminescence properties of porous silicon

Energy Technology Data Exchange (ETDEWEB)

Dimassi, W., E-mail: dimassi_inrst@yahoo.f [Laboratoire de Photovoltaique, Centre de Recherches et des Technologies de l' Energie, Technopole de Borj-Cedria, BP 95 Hammam-Lif 2050 (Tunisia); Haddadi, I.; Bousbih, R.; Slama, S.; Ali Kanzari, M.; Bouaicha, M.; Ezzaouia, H. [Laboratoire de Photovoltaique, Centre de Recherches et des Technologies de l' Energie, Technopole de Borj-Cedria, BP 95 Hammam-Lif 2050 (Tunisia)

2011-05-15

A new method has been developed to improve the photoluminescence intensity of porous silicon (PS), which is first time that LiBr is used for passivation of PS. Immersion of the PS in a LiBr solution, followed by a thermal treatment at 100 {sup o}C for 30 min under nitrogen, leads to a nine fold increase in the intensity of the photoluminescence. The atomic force microscope (AFM) shows an increase of the nanoparticle dimension compared to the initial dimension of the PS nanostructure. The LiBr covers the nanoparticles of silicon without changing the wavelength distribution of the optical excitation and emission spectra. Moreover, a significant decrease of reflectivity was observed for the wavelength in the range of 350-500 nm. - Research highlights: {yields} A new method based on the use of LiBr was developed to enhance nine times the photoluminescence of porous silicon. {yields} The LiBr covers the silicon nanoparticles without changing in the optical excitation and emission spectra. {yields} We observed a significant decrease of the reflectivity in the 350-500 nm spectral range.

Influence of LiBr on photoluminescence properties of porous silicon

International Nuclear Information System (INIS)

Dimassi, W.; Haddadi, I.; Bousbih, R.; Slama, S.; Ali Kanzari, M.; Bouaicha, M.; Ezzaouia, H.

2011-01-01

A new method has been developed to improve the photoluminescence intensity of porous silicon (PS), which is first time that LiBr is used for passivation of PS. Immersion of the PS in a LiBr solution, followed by a thermal treatment at 100 o C for 30 min under nitrogen, leads to a nine fold increase in the intensity of the photoluminescence. The atomic force microscope (AFM) shows an increase of the nanoparticle dimension compared to the initial dimension of the PS nanostructure. The LiBr covers the nanoparticles of silicon without changing the wavelength distribution of the optical excitation and emission spectra. Moreover, a significant decrease of reflectivity was observed for the wavelength in the range of 350-500 nm. - Research highlights: → A new method based on the use of LiBr was developed to enhance nine times the photoluminescence of porous silicon. → The LiBr covers the silicon nanoparticles without changing in the optical excitation and emission spectra. → We observed a significant decrease of the reflectivity in the 350-500 nm spectral range.

Hydrogen concentration profiles and chemical bonding in silicon nitride

International Nuclear Information System (INIS)

Peercy, P.S.; Stein, H.J.; Doyle, B.L.; Picraux, S.T.

1978-01-01

The complementary technique of nuclear reaction analysis and infrared absorption were used to study the concentration profile and chemical bonding of hydrogen in silicon nitride for different preparation and annealing conditions. Silicon nitride prepared by chemical vapor deposition from ammonia-silane mixtures is shown to have hydrogen concentrations of 8.1 and 6.5 at.% for deposition temperatures of 750 and 900 0 C, respectively. Plasma deposition at 300 0 C from these gases results in hydrogen concentrations of approximately 22 at.%. Comparison of nuclear reaction analysis and infrared absorption measurements after isothermal annealing shows that all of the hydrogen retained in the films remains bonded to either silicon or nitrogen and that hydrogen release from the material on annealing is governed by various trap energies involving at least two N-H and one Si-H trap. Reasonable estimates of the hydrogen release rates can be made from the effective diffusion coefficient obtained from measurements of hydrogen migration in hydrogen implanted and annealed films

Deposition and surface characterization of nanoparticles of zinc oxide using dense plasma focus device in nitrogen atmosphere

International Nuclear Information System (INIS)

Malhotra, Yashi; Srivastava, M P; Roy, Savita

2010-01-01

Nanoparticles of zinc oxide from zinc oxide pellets in the nitrogen plasma atmosphere are deposited on n and p type silicon substrates using Dense Plasma Focus device. The hot and dense nitrogen plasma formed during the focus phase ionizes the ZnO pellet, which then move upward in a fountain like shape and gets deposited on substrates which are placed above the top of the anode. Structural and surface properties of the deposited ZnO are investigated using X-ray diffraction and Atomic force microscope (AFM). X-ray spectra shows the diffraction plane (002) of ZnO nanoparticles deposited on Si with few shots in nitrogen atmosphere. AFM investigations revealed that there are nanoparticles of size between 15-80 nm on n-Si and p-Si substrates. The deposition on n-type Si is better than the p-type Si can be seen from AFM images, this may be due to different orientation of silicon.

Characterization of Al2O3 surface passivation of silicon solar cells

International Nuclear Information System (INIS)

Albadri, Abdulrahman M.

2014-01-01

A study of the passivation of silicon surface by aluminum oxide (Al 2 O 3 ) is reported. A correlation of fixed oxide charge density (Q f ) and interface trap density (D it ) on passivation efficiency is presented. Low surface recombination velocity (SRV) was obtained even by as-deposited Al 2 O 3 films and this was found to be associated to the passivation of interface states. Fourier transfer infrared spectroscopy spectra show the existence of an interfacial silicon oxide thin layer in both as-deposited and annealed Al 2 O 3 films. Q f is found positive in as-deposited films and changing to negative upon subsequent annealing, providing thus an enhancement of the passivation in p-type silicon wafers, associated to field effects. Secondary ion mass spectrometry analysis confirms the correlation between D it and hydrogen concentration at the Al 2 O 3 /Si interface. A lowest SRV of 15 cm/s was obtained after an anneal at 400 °C in nitrogen atmosphere. - Highlights: • Al 2 O 3 provides superior passivation for silicon surfaces. • Atomic layer deposition-Al 2 O 3 was deposited at a low temperature of 200 °C. • A lowest surface passivation velocity of 15 cm/s was obtained after an anneal at 400 °C in nitrogen. • As-deposited Al 2 O 3 films form very thin SiO 2 layer responsible of low interface trap densities. • High negative fixed charge density of (− 2 × 10 12 cm −2 ) was achieved upon annealing at 400 °C

To bend or not to bend – are heteroatom interactions within conjugated molecules effective in dictating conformation and planarity?

KAUST Repository

Conboy, Gary; Spencer, Howard J.; Angioni, Enrico; Kanibolotsky, Alexander L.; Findlay, Neil J.; Coles, Simon J.; Wilson, Claire; Pitak, Mateusz B.; Risko, Chad; Coropceanu, Veaceslav; Bredas, Jean-Luc; Skabara, Peter J.

2016-01-01

We consider the roles of heteroatoms (mainly nitrogen, the halogens and the chalcogens) in dictating the conformation of linear conjugated molecules and polymers through non-covalent intramolecular interactions. Whilst hydrogen bonding is a competitive and sometimes more influential interaction, we provide unambiguous evidence that heteroatoms are able to determine the conformation of such materials with reasonable predictability.

To bend or not to bend – are heteroatom interactions within conjugated molecules effective in dictating conformation and planarity?

KAUST Repository

Conboy, Gary

2016-04-26

We consider the roles of heteroatoms (mainly nitrogen, the halogens and the chalcogens) in dictating the conformation of linear conjugated molecules and polymers through non-covalent intramolecular interactions. Whilst hydrogen bonding is a competitive and sometimes more influential interaction, we provide unambiguous evidence that heteroatoms are able to determine the conformation of such materials with reasonable predictability.

Influence of post-annealing on the electrical properties of metal/oxide/silicon nitride/oxide/silicon capacitors for flash memories

International Nuclear Information System (INIS)

Kim, Hee Dong; An, Ho-Myoung; Kim, Kyoung Chan; Seo, Yu Jeong; Kim, Tae Geun

2008-01-01

We report the effect of post-annealing on the electrical properties of metal/oxide/silicon nitride/oxide/silicon (MONOS) capacitors. Four samples, namely as-deposited and annealed at 750, 850 and 950 °C for 30 s in nitrogen ambient by a rapid thermal process, were prepared and characterized for comparison. The best performance with the largest memory window of 4.4 V and the fastest program speed of 10 ms was observed for the sample annealed at 850 °C. In addition, the highest traps density of 6.84 × 10 18 cm −3 was observed with ideal trap distributions for the same sample by capacitance–voltage (C–V) measurement. These results indicate that the memory traps in the ONO structure can be engineered by post-annealing to improve the electrical properties of the MONOS device

Chalcogen passivation: an in-situ method to manipulate the morphology and electrical property of GaAs nanowires.

Science.gov (United States)

Yang, Zai-Xing; Yin, Yanxue; Sun, Jiamin; Bian, Luozhen; Han, Ning; Zhou, Ziyao; Shu, Lei; Wang, Fengyun; Chen, Yunfa; Song, Aimin; Ho, Johnny C

2018-05-02

Recently, owing to the large surface-area-to-volume ratio of nanowires (NWs), manipulation of their surface states becomes technologically important and being investigated for various applications. Here, an in-situ surfactant-assisted chemical vapor deposition is developed with various chalcogens (e.g. S, Se and Te) as the passivators to enhance the NW growth and to manipulate the controllable p-n conductivity switching of fabricated NW devices. Due to the optimal size effect and electronegativity matching, Se is observed to provide the best NW surface passivation in diminishing the space charge depletion effect induced by the oxide shell and yielding the less p-type (i.e. inversion) or even insulating conductivity, as compared with S delivering the intense p-type conductivity for thin NWs with the diameter of ~30 nm. Te does not only provide the surface passivation, but also dopes the NW surface into n-type conductivity by donating electrons. All of the results can be extended to other kinds of NWs with similar surface effects, resulting in careful device design considerations with appropriate surface passivation for achieving the optimal NW device performances.

Recent Optical and SEM Characterization of Genesis Solar Wind Concentrator Diamond on Silicon Collector

Science.gov (United States)

Allton, Judith H.; Rodriquez, M. C.; Burkett, P. J.; Ross, D. K.; Gonzalez, C. P.; McNamara, K. M.

2013-01-01

One of the 4 Genesis solar wind concentrator collectors was a silicon substrate coated with diamond-like carbon (DLC) in which to capture solar wind. This material was designed for analysis of solar nitrogen and noble gases [1, 2]. This particular collector fractured during landing, but about 80% of the surface was recovered, including a large piece which was subdivided in 2012 [3, 4, 5]. The optical and SEM imaging and analysis described below supports the subdivision and allocation of the diamond-on-silicon (DOS) concentrator collector.

Fabrication of flexible hierarchical porous nitrogen-doped carbon nanofiber films for application in binder-free supercapacitors

International Nuclear Information System (INIS)

Huang, Kaibing; Yao, Yiyuan; Yang, Xiuwen; Chen, Zhenhua; Li, Min

2016-01-01

Hierarchical porous nitrogen-doped carbon nanofiber (HPNCNF) films were prepared via a simple electrospinning process, in which polyacrylonitrile and silicone surfactants were adopted as carbon source and porogen, respectively, followed by a thermal treatment. The morphology, chemical composition, and porosity of the HPNCNFs were investigated by scanning electron microscopy, transmission electron microscopy, X-ray photoelectron spectroscopy, Raman spectroscopy and nitrogen adsorption–desorption experiments. The as-prepared HPNCNFs with a specific surface area of 656 m"2 g"−"1, a hierarchical pore structure, and a nitrogen content of 8.1 at% showed a specific capacitance of 289 F g"−"1 in a 6 mol L"−"1 KOH aqueous solution with excellent cycle durability, making HPNCNF films a promising electrode material for a future application in supercapacitors. - Highlights: • HPNCNF films are prepared by electrospinning followed by thermal treatment. • Silicone surfactants are adopted as porogen to prepare HPNCNF films. • The HPNCNF films show a specific capacitance of 289 F g"−"1 at a current density of 0.2 A g"−"1.

High performance SONOS flash memory with in-situ silicon nanocrystals embedded in silicon nitride charge trapping layer

Science.gov (United States)

Lim, Jae-Gab; Yang, Seung-Dong; Yun, Ho-Jin; Jung, Jun-Kyo; Park, Jung-Hyun; Lim, Chan; Cho, Gyu-seok; Park, Seong-gye; Huh, Chul; Lee, Hi-Deok; Lee, Ga-Won

2018-02-01

In this paper, SONOS-type flash memory device with highly improved charge-trapping efficiency is suggested by using silicon nanocrystals (Si-NCs) embedded in silicon nitride (SiNX) charge trapping layer. The Si-NCs were in-situ grown by PECVD without additional post annealing process. The fabricated device shows high program/erase speed and retention property which is suitable for multi-level cell (MLC) application. Excellent performance and reliability for MLC are demonstrated with large memory window of ∼8.5 V and superior retention characteristics of 7% charge loss for 10 years. High resolution transmission electron microscopy image confirms the Si-NC formation and the size is around 1-2 nm which can be verified again in X-ray photoelectron spectroscopy (XPS) where pure Si bonds increase. Besides, XPS analysis implies that more nitrogen atoms make stable bonds at the regular lattice point. Photoluminescence spectra results also illustrate that Si-NCs formation in SiNx is an effective method to form deep trap states.

Improved reaction sintered silicon nitride. [protective coatings to improve oxidation resistance

Science.gov (United States)

Baumgartner, H. R.

1978-01-01

Processing treatments were applied to as-nitrided reaction sintered silicon nitride (RSSN) with the purposes of improving strength after processing to above 350 MN/m2 and improving strength after oxidation exposure. The experimental approaches are divided into three broad classifications: sintering of surface-applied powders; impregnation of solution followed by further thermal processing; and infiltration of molten silicon and subsequent carburization or nitridation of the silicon. The impregnation of RSSN with solutions of aluminum nitrate and zirconyl chloride, followed by heating at 1400-1500 C in a nitrogen atmosphere containing silicon monoxide, improved RSSN strength and oxidation resistance. The room temperature bend strength of RSSN was increased nearly fifty percent above the untreated strength with mean absolute strengths up to 420 MN/m2. Strengths of treated samples that were measured after a 12 hour oxidation exposure in air were up to 90 percent of the original as-nitrided strength, as compared to retained strengths in the range of 35 to 60 percent for untreated RSSN after the same oxidation exposure.

Surface Area, and Oxidation Effects on Nitridation Kinetics of Silicon Powder Compacts

Science.gov (United States)

Bhatt, R. T.; Palczer, A. R.

1998-01-01

Commercially available silicon powders were wet-attrition-milled from 2 to 48 hr to achieve surface areas (SA's) ranging from 1.3 to 70 sq m/g. The surface area effects on the nitridation kinetics of silicon powder compacts were determined at 1250 or 1350 C for 4 hr. In addition, the influence of nitridation environment, and preoxidation on nitridation kinetics of a silicon powder of high surface area (approximately equals 63 sq m/g) was investigated. As the surface area increased, so did the percentage nitridation after 4 hr in N2 at 1250 or 1350 C. Silicon powders of high surface area (greater than 40 sq m/g) can be nitrided to greater than 70% at 1250 C in 4 hr. The nitridation kinetics of the high-surface-area powder compacts were significantly delayed by preoxidation treatment. Conversely, the nitridation environment had no significant influence on the nitridation kinetics of the same powder. Impurities present in the starting powder, and those accumulated during attrition milling, appeared to react with the silica layer on the surface of silicon particles to form a molten silicate layer, which provided a path for rapid diffusion of nitrogen and enhanced the nitridation kinetics of high surface area silicon powder.

Total dose hardening of buried insulator in implanted silicon-on-insulator structures

International Nuclear Information System (INIS)

Mao, B.Y.; Chen, C.E.; Pollack, G.; Hughes, H.L.; Davis, G.E.

1987-01-01

Total dose characteristics of the buried insulator in implanted silicon-on-insulator (SOI) substrates have been studied using MOS transistors. The threshold voltage shift of the parasitic back channel transistor, which is controlled by charge trapping in the buried insulator, is reduced by lowering the oxygen dose as well as by an additional nitrogen implant, without degrading the front channel transistor characteristics. The improvements in the radiation characteristics of the buried insulator are attributed to the decrease in the buried oxide thickness or to the presence of the interfacial oxynitride layer formed by the oxygen and nitrogen implants

4H-SiC surface energy tuning by nitrogen up-take

Energy Technology Data Exchange (ETDEWEB)

Pitthan, E., E-mail: eduardo.pitthan@ufrgs.br [Institute for Advanced Materials, Devices and Nanotechnology, Rutgers University, Piscataway, NJ 08854 (United States); PGMICRO, UFRGS, 91509-900, Porto Alegre, RS (Brazil); Amarasinghe, V.P. [Institute for Advanced Materials, Devices and Nanotechnology, Rutgers University, Piscataway, NJ 08854 (United States); Xu, C.; Gustafsson, T. [Institute for Advanced Materials, Devices and Nanotechnology, Rutgers University, Piscataway, NJ 08854 (United States); Department of Physics and Astronomy, Rutgers University, Piscataway, NJ 08854 (United States); Stedile, F.C. [PGMICRO, UFRGS, 91509-900, Porto Alegre, RS (Brazil); Instituto de Química, UFRGS, 91509-900, Porto Alegre, RS (Brazil); Feldman, L.C. [Institute for Advanced Materials, Devices and Nanotechnology, Rutgers University, Piscataway, NJ 08854 (United States); Department of Physics and Astronomy, Rutgers University, Piscataway, NJ 08854 (United States)

2017-04-30

Highlights: • Wettability modification of 4H-SiC as a function of nitrogen adsorption is reported. • SiC surface energy was significantly reduced as nitrogen was incorporated. • Modifications obtained were proved to be inert to etching and stable against time. • Variable control of SiC surface provides new opportunities for biomedical applications. - Abstract: Surface energy modification and surface wettability of 4H silicon carbide (0001) as a function of nitrogen adsorption is reported. The surface wettability is shown to go from primarily hydrophilic to hydrophobic and the surface energy was significantly reduced with increasing nitrogen incorporation. These changes are investigated by x-ray photoelectron spectroscopy and contact angle measurements. The surface energy was quantitatively determined by the Fowkes model and interpreted primarily in terms of the variation of the surface chemistry with nitrogen coverage. Variable control of SiC surface energies with a simple and controllable atomic additive such as nitrogen that is inert to etching, stable against time, and also effective in electrical passivation, can provide new opportunities for SiC biomedical applications, where surface wetting plays an important role in the interaction with the biological interfaces.

Formation of a Polycrystalline Silicon Thin Film by Using Blue Laser Diode Annealing

Science.gov (United States)

Choi, Young-Hwan; Ryu, Han-Youl

2018-04-01

We report the crystallization of an amorphous silicon thin film deposited on a SiO2/Si wafer using an annealing process with a high-power blue laser diode (LD). The laser annealing process was performed using a continuous-wave blue LD of 450 nm in wavelength with varying laser output power in a nitrogen atmosphere. The crystallinity of the annealed poly-silicon films was investigated using ellipsometry, electron microscope observation, X-ray diffraction, and Raman spectroscopy. Polysilicon grains with > 100-nm diameter were observed to be formed after the blue LD annealing. The crystal quality was found to be improved as the laser power was increased up to 4 W. The demonstrated blue LD annealing is expected to provide a low-cost and versatile solution for lowtemperature poly-silicon processes.

Behavior of ion-implanted cesium in silicon dioxide films

International Nuclear Information System (INIS)

Fishbein, B.J.

1988-01-01

Charged impurities in silicon dioxide can be used to controllably shift the flatband voltage of metal-oxide-semiconductor devices independently of the substrate doping, the gate oxide thickness and the gate-electrode work function. Cesium is particularly well suited for this purpose because it is immobile in SiO 2 at normal device operating temperatures, and because it can be controllably introduced into oxide films by ion implantation. Cesium is positively charged in silicon dioxide, resulting in a negative flatband voltage shift. Possible applications for cesium technology include solar cells, devices operated at liquid nitrogen temperature, and power devices. The goal of this work has been to characterize as many aspects of cesium behavior in silicon dioxide as are required for practical applications. Accordingly, cesium-ion implantation, cesium diffusion, and cesium electrical activation in SiO 2 were studied over a broad range of processing conditions. The electrical properties of cesium-containing oxides, including current-voltage characteristics, interface trap density, and inversion-layer carrier mobility were examined, and several potential applications for cesium technology have been experimentally demonstrated

Surface topography and morphology characterization of PIII irradiated silicon surface

International Nuclear Information System (INIS)

Sharma, Satinder K.; Barthwal, Sumit

2008-01-01

The effect of plasma immersion ion implantation (PIII) treatment on silicon surfaces was investigated by micro-Raman and atomic force microscopy (AFM) technique. The surface damage was given by the implantation of carbon, nitrogen, oxygen and argon ions using an inductively coupled plasma (ICP) source at low pressure. AFM studies show that surface topography of the PIII treated silicon wafers depend on the physical and chemical nature of the implanted species. Micro-Raman spectra indicate that the significant reduction of intensity of Raman peak after PIII treatment. Plasma immersion ion implantation is a non-line-of-sight ion implantation method, which allows 3D treatment of materials. Therefore, PIII based surface modification and plasma immersion ion deposition (PIID) coatings are applied in a wide range of situations.

Effect of post-deposition implantation and annealing on the properties of PECVD deposited silicon nitride films

International Nuclear Information System (INIS)

Shams, Q.A.

1988-01-01

Recently it has been shown that memory-quality silicon nitride can be deposited using plasma enhanced chemical vapor deposition (PECVD). Nitrogen implantation and post-deposition annealing resulted in improved memory properties of MNOS devices. The primary objective of the work described here is the continuation of the above work. Silicon nitride films were deposited using argon as the carrier gas and evaluated in terms of memory performance as the charge-trapping layer in the metal-nitride-oxide-silicon (MNOS) capacitor structure. The bonding structure of PECVD silicon nitride was modified by annealing in different ambients at temperatures higher than the deposition temperature. Post-deposition ion implantation was used to introduce argon into the films in an attempt to influence the transfer, trapping, and emission of charge during write/erase exercising of the MNOS devices. Results show that the memory performance of PECVD silicon nitride is sensitive to the deposition parameters and post-deposition processing

Room temperature NO2 gas sensing of Au-loaded tungsten oxide nanowires/porous silicon hybrid structure

International Nuclear Information System (INIS)

Wang Deng-Feng; Liang Ji-Ran; Li Chang-Qing; Yan Wen-Jun; Hu Ming

2016-01-01

In this work, we report an enhanced nitrogen dioxide (NO 2 ) gas sensor based on tungsten oxide (WO 3 ) nanowires/porous silicon (PS) decorated with gold (Au) nanoparticles. Au-loaded WO 3 nanowires with diameters of 10 nm–25 nm and lengths of 300 nm–500 nm are fabricated by the sputtering method on a porous silicon substrate. The high-resolution transmission electron microscopy (HRTEM) micrographs show that Au nanoparticles are uniformly distributed on the surfaces of WO 3 nanowires. The effect of the Au nanoparticles on the NO 2 -sensing performance of WO 3 nanowires/porous silicon is investigated over a low concentration range of 0.2 ppm–5 ppm of NO 2 at room temperature (25 °C). It is found that the 10-Å Au-loaded WO 3 nanowires/porous silicon-based sensor possesses the highest gas response characteristic. The underlying mechanism of the enhanced sensing properties of the Au-loaded WO 3 nanowires/porous silicon is also discussed. (paper)

Pulsed laser ablation of silicon with low laser fluence in a low-pressure of ammonia ambient

International Nuclear Information System (INIS)

Choo, Cheow-Keong; Tohara, Makoto; Enomoto, Kazuhiro; Tanaka, Katsumi

2004-01-01

Silicon was ablated by 532 nm wavelength of Nd:YAG laser in ammonia gas ambient. The influence of laser fluence and gas ambient pressures between 1.33x10 1 to 1.33x10 -5 Pa on the deposited compound was studied by in situ X-ray photoelectron spectroscopy and transmission Fourier transform infrared spectroscopy techniques. The results indicate that the deposited compound is composed of nonstoichiometric silicon nitride (SiN x , x=0-0.84). It has been shown that the composition of nitrogen to silicon is sensitive to the laser fluence; it increases with decreasing laser fluence. However, the ammonia gas ambient in these low pressures range had no influence on the composition of the deposited compound. The reaction of the ablated silicon with low-pressure ambient ammonia is proposed to be occurred on the substrate

Porous Silicon Hydrogen Sensor at Room Temperature: The Effect of Surface Modification and Noble Metal Contacts

Directory of Open Access Journals (Sweden)

Jayita KANUNGO

2009-04-01

Full Text Available Porous silicon (PS was fabricated by anodization of p-type crystalline silicon of resistivity 2-5 Ω cm. After formation, the PS surface was modified by the solution containing noble metal like Pd. Pd-Ag catalytic contact electrodes were deposited on porous silicon and on p-Silicon to fabricate Pd-Ag/PS/p-Si/Pd-Ag sensor structure to carry out the hydrogen sensing experiments. The Sensor was exposed to 1% hydrogen in nitrogen as carrier gas at room temperature (270C. Pd modified sensor showed minimum fluctuations and consistent performance with 86% response, response time and recovery time of 24 sec and 264 sec respectively. The stability experiments were studied for both unmodified and Pd modified sensor structures for a period of about 24 hours and the modified sensors showed excellent durability with no drift in response behavior.

Micro-cutting of silicon implanted with hydrogen and post-implantation thermal treatment

Science.gov (United States)

Jelenković, Emil V.; To, Suet; Sundaravel, B.; Xiao, Gaobo; Huang, Hu

2016-07-01

It was reported that non-amorphizing implantation by hydrogen has a potential in improving silicon machining. Post-implantation high-temperature treatment will affect implantation-induced damage, which can have impact on silicon machining. In this article, a relation of a thermal annealing of hydrogen implanted in silicon to micro-cutting experiment is investigated. Hydrogen ions were implanted into 4″ silicon wafers with 175 keV, 150 keV, 125 keV and doses of 2 × 1016 cm-2, 2 × 1016 cm-2 and 3 × 1016 cm-2, respectively. In this way, low hydrogen atom-low defect concentration was created in the region less than ~0.8 μm deep and high hydrogen atom-high defect concentration was obtained at silicon depth of ~0.8-1.5 μm. The post-implantation annealing was carried out at 300 and 400 °C in nitrogen for 1 h. Physical and electrical properties of implanted and annealed samples were characterized by secondary ion mass spectroscopy (SIMS), X-ray diffraction (XRD), Rutherford backscattering (RBS) and nanoindentation. Plunge cutting experiment was carried out in and silicon crystal direction. The critical depth of cut and cutting force were monitored and found to be influenced by the annealing. The limits of hydrogen implantation annealing contribution to the cutting characteristics of silicon are discussed in light of implantation process and redistribution of hydrogen and defects generation during annealing process.

Effect of Etching Parameter on Pore Size and Porosity of Electrochemically Formed Nanoporous Silicon

Directory of Open Access Journals (Sweden)

Pushpendra Kumar

2007-01-01

Full Text Available The most common fabrication technique of porous silicon (PS is electrochemical etching of a crystalline silicon wafer in a hydrofluoric (HF acid-based solution. The electrochemical process allows for precise control of the properties of PS such as thickness of the porous layer, porosity, and average pore diameter. The control of these properties of PS was shown to depend on the HF concentration in the used electrolyte, the applied current density, and the thickness of PS. The change in pore diameter, porosity, and specific surface area of PS was investigated by measuring nitrogen sorption isotherms.

Fabrication of flexible hierarchical porous nitrogen-doped carbon nanofiber films for application in binder-free supercapacitors

Energy Technology Data Exchange (ETDEWEB)

Huang, Kaibing, E-mail: kbhuang8888@163.com; Yao, Yiyuan; Yang, Xiuwen; Chen, Zhenhua; Li, Min

2016-02-01

Hierarchical porous nitrogen-doped carbon nanofiber (HPNCNF) films were prepared via a simple electrospinning process, in which polyacrylonitrile and silicone surfactants were adopted as carbon source and porogen, respectively, followed by a thermal treatment. The morphology, chemical composition, and porosity of the HPNCNFs were investigated by scanning electron microscopy, transmission electron microscopy, X-ray photoelectron spectroscopy, Raman spectroscopy and nitrogen adsorption–desorption experiments. The as-prepared HPNCNFs with a specific surface area of 656 m{sup 2} g{sup −1}, a hierarchical pore structure, and a nitrogen content of 8.1 at% showed a specific capacitance of 289 F g{sup −1} in a 6 mol L{sup −1} KOH aqueous solution with excellent cycle durability, making HPNCNF films a promising electrode material for a future application in supercapacitors. - Highlights: • HPNCNF films are prepared by electrospinning followed by thermal treatment. • Silicone surfactants are adopted as porogen to prepare HPNCNF films. • The HPNCNF films show a specific capacitance of 289 F g{sup −1} at a current density of 0.2 A g{sup −1}.

Erbium doped stain etched porous silicon

International Nuclear Information System (INIS)

Gonzalez-Diaz, B.; Diaz-Herrera, B.; Guerrero-Lemus, R.; Mendez-Ramos, J.; Rodriguez, V.D.; Hernandez-Rodriguez, C.; Martinez-Duart, J.M.

2008-01-01

In this work a simple erbium doping process applied to stain etched porous silicon layers (PSLs) is proposed. This doping process has been developed for application in porous silicon solar cells, where conventional erbium doping processes are not affordable because of the high processing cost and technical difficulties. The PSLs were formed by immersion in a HF/HNO 3 solution to properly adjust the porosity and pore thickness to an optimal doping of the porous structure. After the formation of the porous structure, the PSLs were analyzed by means of nitrogen BET (Brunauer, Emmett and Teller) area measurements and scanning electron microscopy. Subsequently, the PSLs were immersed in a saturated erbium nitrate solution in order to cover the porous surface. Then, the samples were subjected to a thermal process to activate the Er 3+ ions. Different temperatures and annealing times were used in this process. The photoluminescence of the PSLs was evaluated before and after the doping processes and the composition was analyzed by Fourier transform IR spectroscopy

Photoluminescence and electrical properties of silicon oxide and silicon nitride superlattices containing silicon nanocrystals

International Nuclear Information System (INIS)

Shuleiko, D V; Ilin, A S

2016-01-01

Photoluminescence and electrical properties of superlattices with thin (1 to 5 nm) alternating silicon-rich silicon oxide or silicon-rich silicon nitride, and silicon oxide or silicon nitride layers containing silicon nanocrystals prepared by plasma-enhanced chemical vapor deposition with subsequent annealing were investigated. The entirely silicon oxide based superlattices demonstrated photoluminescence peak shift due to quantum confinement effect. Electrical measurements showed the hysteresis effect in the vicinity of zero voltage due to structural features of the superlattices from SiOa 93 /Si 3 N 4 and SiN 0 . 8 /Si 3 N 4 layers. The entirely silicon nitride based samples demonstrated resistive switching effect, comprising an abrupt conductivity change at about 5 to 6 V with current-voltage characteristic hysteresis. The samples also demonstrated efficient photoluminescence with maximum at ∼1.4 eV, due to exiton recombination in silicon nanocrystals. (paper)

Characterization of gate oxynitrides by means of time of flight secondary ion mass spectrometry and x-ray photoelectron spectroscopy. Quantification of nitrogen

International Nuclear Information System (INIS)

Ferrari, S.; Perego, M.; Fanciulli, M.

2002-01-01

We present a methodology for the quantitative estimation of nitrogen in ultrathin oxynitrides by means of time of flight secondary ion mass spectrometry (TOF-SIMS) and x-ray photoelectron spectroscopy (XPS). We consider an innovative approach to TOF-SIMS depth profiling, by elemental distribution of single species as sum of peaks containing such species. This approach is very efficient in overcoming matrix effect arising when quantifying elements were distributed in silicon and silicon oxide. We use XPS to calibrate TOF-SIMS and to obtain quantitative information on nitrogen distribution in oxynitride thin layers. In the method we propose we process TOF-SIMS and XPS data simultaneously to obtain a quantitative depth profile

Technology of fabrication of silicon-lithium detector with superficial junction

International Nuclear Information System (INIS)

Cabal Rodriguez, A.E.; Diaz Garcia, A.; Noriega Scull, C.

1997-01-01

The Silicon nuclear radiation detectors transform the charge produced within the semiconductor crystal, product of the impinges of particles and X rays, in pulses of voltage at the output of the preamplifier. The planar Silicon-Lithium (Si(Li)) detector with superficial junction is basically a Pin structure diode. By mean of the diffusion and drift of Lithium in the Silicon a compensated or depletion region was created. There the incident radiation interacts with the Silicon, producing an electric signal proportional to the detector's energy deposited in the semiconductor. The technological process of fabrication this kind of detectors comprises several stages, some of them complex and of long duration. They also demand a systematic control. The technological process of Si(Li) detector's fabrication was carried out. The detector's fabrication electric characteristics were measured in some steps. An obtained device was mounted in the holder within a cryostat, in order to work to temperature of the liquid nitrogen. The energy resolution of the detector was measured and the value was 180 eV for the line of 5.9 KeV of an Fe-55 source. This value has allowed to work with the detector in energy disperse X-rays fluorescence. (author) [es

Assessment of a silicon detector for pulsed neutron scattering experiments

International Nuclear Information System (INIS)

Tardocchi, M.; Arnaboldi, C.; Gorini, G.; Imberti, S.; Pessina, G.; Previtali, E.; Andreani, C.; Pietropaolo, A.; Senesi, R.

2004-01-01

Resonance detectors (RD) are being developed for neutron spectroscopy in the epithermal energy region at spallation neutron sources. Different choices of converter foils and gamma spectrometers are being compared as part of an optimization and selection process within the TECHNI project. This paper reports on the design of a silicon detector system and some preliminary tests on the VESUVIO spectrometer. The detector has a good efficiency in the X-ray energy range, where two intense photon peaks (at 12 and 48 keV) are expected to be emitted following neutron capture in a uranium converter foil. The detector energy resolution has been improved by nitrogen vapor cooling of the silicon chip and by careful design of the preamplifier electronics. Neutron time of flight spectra have been measured on VESUVIO when the converter foil is placed in the neutron beam. In that case, the detector response is dominated by a continuum due to Compton detection of gammas of higher energy. These results provide a basis for a critical assessment of the applicability of silicon detectors for RD measurements of epithermal neutrons

Doping of silicon carbide by ion implantation

International Nuclear Information System (INIS)

Gimbert, J.

1999-01-01

It appeared that in some fields, as the hostile environments (high temperature or irradiation), the silicon compounds showed limitations resulting from the electrical and mechanical properties. Doping of 4H and 6H silicon carbide by ion implantation is studied from a physicochemical and electrical point of view. It is necessary to obtain n-type and p-type material to realize high power and/or high frequency devices, such as MESFETs and Schottky diodes. First, physical and electrical properties of silicon carbide are presented and the interest of developing a process technology on this material is emphasised. Then, physical characteristics of ion implantation and particularly classical dopant implantation, such as nitrogen, for n-type doping, and aluminium and boron, for p-type doping are described. Results with these dopants are presented and analysed. Optimal conditions are extracted from these experiences so as to obtain a good crystal quality and a surface state allowing device fabrication. Electrical conduction is then described in the 4H and 6H-SiC polytypes. Freezing of free carriers and scattering processes are described. Electrical measurements are carried out using Hall effect on Van der Panw test patterns, and 4 point probe method are used to draw the type of the material, free carrier concentrations, resistivity and mobility of the implanted doped layers. These results are commented and compared to the theoretical analysis. The influence of the technological process on electrical conduction is studied in view of fabricating implanted silicon carbide devices. (author)

Spontaneously-acoustic hypersound long-range stimulation of silicon nitride synthesis in silicon at argon ion irradiation

CERN Document Server

Demidov, E S; Markov, K A; Sdobnyakov, V V

2001-01-01

The work is dedicated to the nature of the average energy ions implantation process effect on the crystal defective system at the distances, exceeding by three-four orders the averagely projected ions run value. It is established that irradiation by the argon ions stimulated the Si sub 3 N sub 4 phase formation in the preliminarily nitrogen-saturated layers at the distances of approximately 600 mu m from the ions deceleration zone. It is supposed that there appear sufficiently effective pulse sources of the hypersonic shock waves in the area of the Ar sup + deceleration zone. These waves are the result of the jump-like origination and grid evolution of the loop-shaped dislocations and argon blisters as well as of the blisters explosion, The evaluations show that the peak pressure in wave due to the synchronized explosion of blisters in the nitrogen-saturated area on the reverse side of the silicon plate 600 mu m thick may exceed 10 sup 8 Pa and cause experimentally observed changes

Effect of ultraviolet illumination and ambient gases on the photoluminescence and electrical properties of nanoporous silicon layer for organic vapor sensor.

Science.gov (United States)

Atiwongsangthong, Narin

2012-08-01

The purpose of this research, the nanoporous silicon layer were fabricated and investigated the physical properties such as photoluminescence and the electrical properties in order to develop organic vapor sensor by using nanoporous silicon. The Changes in the photoluminescence intensity of nanoporous silicon samples are studied during ultraviolet illumination in various ambient gases such as nitrogen, oxigen and vacuum. In this paper, the nanoporous silicon layer was used as organic vapor adsorption and sensing element. The advantage of this device are simple process compatible in silicon technology and usable in room temperature. The structure of this device consists of nanoporous silicon layer which is formed by anodization of silicon wafer in hydrofluoric acid solution and aluminum electrode which deposited on the top of nanoporous silicon layer by evaporator. The nanoporous silicon sensors were placed in a gas chamber with various organic vapor such as ethanol, methanol and isopropyl alcohol. From studying on electrical characteristics of this device, it is found that the nanoporous silicon layer can detect the different organic vapor. Therefore, the nanoporous silicon is important material for organic vapor sensor and it can develop to other applications about gas sensors in the future.

Annual reports in inorganic and general syntheses 1974

CERN Document Server

Niedenzu, Kurt

1975-01-01

Annual Reports in Inorganic and General Syntheses-1974 presents an organized annual summary of synthetic developments in inorganic chemistry and its related areas. The book discusses the chemistry of simple and complex metal hydrides of main groups I, II, and III, boron, aluminium, gallium, indium, thallium, silicon, germanium, tin, lead, phosphorus, arsenic, antimony, bismuth, chalcogens, halogens, and pseudohalogens. The text also describes the chemistry of scandium, yttrium, lanthanides, actinides, titanium, zirconium, hafnium, vanadium, niobium, tantalum, chromium, molybdenum, tungsten, ma

Nitrogen binding behavior in ZnO films with time-resolved cathodoluminescence

International Nuclear Information System (INIS)

Mei, Y.F.; Fu, Ricky K.Y.; Siu, G.G.; Wong, K.W.; Chu, Paul K.; Wang, R.S.; Ong, H.C.

2006-01-01

ZnO film with (1 0 0) orientation was produced on silicon substrate and doped with nitrogen using plasma immersion ion implantation. The effects due to N doping were investigated using cathodoluminescence (CL). In the heavily nitrogen-doped ZnO film, the intensity of ultraviolet (UV) band decreases and that of the visible band increases as a function of the electron bombardment cycle i.e. time. Based on the X-ray photoelectron spectroscopy (XPS) analysis, the unstable Zn-N bond is responsible for the CL behavior and the experimental results agree well with the first-principle calculation. Our work is helpful to our understanding of the role of p-type dopants in ZnO

Plasma-assisted nitrogen doping of VACNTs for efficiently enhancing the supercapacitor performance

Energy Technology Data Exchange (ETDEWEB)

Mashayekhi, Alireza; Hosseini, Seyed Mahmoud [University of Tehran, Nano-fabricated Energy Devices Laboratory, School of Electrical and Computer Engineering, College of Engineering (Iran, Islamic Republic of); Hassanpour Amiri, Morteza; Namdar, Naser [University of Tehran, Thin Film and Nano-electronics Laboratory, Nano-electronics Centre of Excellence, School of Electrical and Computer Engineering, College of Engineering (Iran, Islamic Republic of); Sanaee, Zeinab, E-mail: z.sanaee@ut.ac.ir [University of Tehran, Nano-fabricated Energy Devices Laboratory, School of Electrical and Computer Engineering, College of Engineering (Iran, Islamic Republic of)

2016-06-15

Nitrogen doping of vertically aligned carbon nanotubes (VACNTs) using plasma-enhanced chemical vapour deposition has been investigated to improve the supercapacitance performance of CNTs. Incorporating electrochemical measurements on the open-ended nitrogen-doped CNTs, showed the achievement of 6 times improvement in the capacitance value. For nitrogen-doped CNTs on silicon substrate, specific capacitance of 60 F g{sup −1} was obtained in 0.5 M KCl solution, with capacity retention ratio above 90 % after cycled at 0.1 A g{sup −1} for 5000 cycles. Using this sample, a symmetric supercapacitance was fabricated which showed the power density of 37.5 kW kg{sup −1}. The facile fabrication approach and its excellent capacitance improvement, propose it as an efficient technique for enhancing the supercapacitance performance of the carbon-based electrodes.

Non-destructive photon activation analysis of carbon and nitrogen in thin films

International Nuclear Information System (INIS)

Shikano, Koji; Katoh, Masaaki; Masumoto, Kazuyoshi; Ohtsuki, Tsutomu

1998-01-01

Study was made on interference nuclear reactions with 12 C(γ,n) 11 C and 14 N(γ,n) 13 N reactions, interference radioactivity from the matrix, and prevention of contamination from the atmosphere. The following were made clear: Interference nuclear reactions can be neglected by controlling the radiation energy of bremsstrahlung below 30 MeV; radiation interference can be avoided by starting measurement 20-30 min after irradiation, though 29 Al is formed from Si substrate; and contamination from the atmosphere can be controlled by He gas replacement. With graphite and boron nitride used as the reference standards, carbon in silicon carbide film and nitrogen in silicon nitride film were determined with the result that their concentrations in the films were 37.03±1.28 μg/cm 2 and 52.97±2.97 μg/cm 2 , respectively. The determination limits of this method were 0.3 μg for carbon and 3 μg for nitrogen. The measurement of film thickness distribution revealed that these film samples could be used as light element reference standards for charged particle activation analysis. (N.H.)

Nanodiamonds with silicon vacancy defects for nontoxic photostable fluorescent labeling of neural precursor cells.

Science.gov (United States)

Merson, Tobias D; Castelletto, Stefania; Aharonovich, Igor; Turbic, Alisa; Kilpatrick, Trevor J; Turnley, Ann M

2013-10-15

Nanodiamonds (NDs) containing silicon vacancy (SiV) defects were evaluated as a potential biomarker for the labeling and fluorescent imaging of neural precursor cells (NPCs). SiV-containing NDs were synthesized using chemical vapor deposition and silicon ion implantation. Spectrally, SiV-containing NDs exhibited extremely stable fluorescence and narrow bandwidth emission with an excellent signal to noise ratio exceeding that of NDs containing nitrogen-vacancy centers. NPCs labeled with NDs exhibited normal cell viability and proliferative properties consistent with biocompatibility. We conclude that SiV-containing NDs are a promising biomedical research tool for cellular labeling and optical imaging in stem cell research.

The atomic and electronic structure of amorphous silicon nitride

International Nuclear Information System (INIS)

Alvarez, F.; Valladares, A.A.

2002-01-01

Using a novel approach to the ab initio generation of random networks we constructed two nearly stoichiometric samples of amorphous silicon nitride with the same content x= 1.29. The two 64-atom periodically-continued cubic diamond-like cells contain 28 silicons and 36 nitrogens randomly substituted, and were amorphized with a 6 f s time step by heating them to just below their melting temperature with a Harris-functional based, molecular dynamics code in the LDA approximation. The averaged total radial distribution function (RDF) obtained is compared with some existing Tersoff-like potential simulations and with experiment; ours agree with experiment. All the partial radial features are calculated and the composition of the second peak also agrees with experiment. The electronic structure is calculated and the optical gaps obtained using both a HOMO-LUMO approach and the Tauc-like procedure developed recently that gives reasonable gaps. (Author)

Silicone metalization

Energy Technology Data Exchange (ETDEWEB)

Maghribi, Mariam N. (Livermore, CA); Krulevitch, Peter (Pleasanton, CA); Hamilton, Julie (Tracy, CA)

2008-12-09

A system for providing metal features on silicone comprising providing a silicone layer on a matrix and providing a metal layer on the silicone layer. An electronic apparatus can be produced by the system. The electronic apparatus comprises a silicone body and metal features on the silicone body that provide an electronic device.

Formation of porous silicon oxide from substrate-bound silicon rich silicon oxide layers by continuous-wave laser irradiation

Science.gov (United States)

Wang, Nan; Fricke-Begemann, Th.; Peretzki, P.; Ihlemann, J.; Seibt, M.

2018-03-01

Silicon nanocrystals embedded in silicon oxide that show room temperature photoluminescence (PL) have great potential in silicon light emission applications. Nanocrystalline silicon particle formation by laser irradiation has the unique advantage of spatially controlled heating, which is compatible with modern silicon micro-fabrication technology. In this paper, we employ continuous wave laser irradiation to decompose substrate-bound silicon-rich silicon oxide films into crystalline silicon particles and silicon dioxide. The resulting microstructure is studied using transmission electron microscopy techniques with considerable emphasis on the formation and properties of laser damaged regions which typically quench room temperature PL from the nanoparticles. It is shown that such regions consist of an amorphous matrix with a composition similar to silicon dioxide which contains some nanometric silicon particles in addition to pores. A mechanism referred to as "selective silicon ablation" is proposed which consistently explains the experimental observations. Implications for the damage-free laser decomposition of silicon-rich silicon oxides and also for controlled production of porous silicon dioxide films are discussed.

Characterization of carbon, nitrogen, oxygen and refractory metals in binary and ternary silicon-based films using ion beam methods; Caracterisation des elements: carbone, azote, oxygene et metal refractaire dans des depots binaires et ternaires a base de silicium par methodes d'analyse utilisant les faisceaux d'ions

Energy Technology Data Exchange (ETDEWEB)

Somatri-Bouamrane, R. [Lyon-1 Univ., 69 - Villeurbanne (France). Inst. de Physique Nucleaire]|[Universite Claude Bernard, 69 - Lyon (France)

1996-12-19

Ion beam methods (non Rutherford backscattering, nuclear reactions) have been carried out in order to characterize silicon-based films. The cross sections for the reactions {sup 12}C({alpha},{alpha}), {sup 14}N({alpha},{alpha}), {sup 16}O({alpha},{alpha}), {sup 28}Si({alpha},{alpha}) and {sup 14}N({alpha},p) have been measured within 2 and 7 MeV. CVD beta SiC films could be analyzed and the interface between silicon carbide and the (100) silicon substrate was studied. The epitaxial growth of the beta SiC film could be modelled by comparing the results obtained with ion beam analysis, infrared spectroscopy and electron microscopy. Moreover, the stoichiometry of low pressure CVD Me-Si-N (Me=Re, W, Ti, Ta) ternary systems was studied. The evolution of the nitrogen content in W-Si-N systems allowed to study their stability with respect to the annealing conditions. (N.T.)

Highly ordered amorphous silicon-carbon alloys obtained by RF PECVD

CERN Document Server

Pereyra, I; Carreno, M N P; Prado, R J; Fantini, M C A

2000-01-01

We have shown that close to stoichiometry RF PECVD amorphous silicon carbon alloys deposited under silane starving plasma conditions exhibit a tendency towards c-Si C chemical order. Motivated by this trend, we further explore the effect of increasing RF power and H sub 2 dilution of the gaseous mixtures, aiming to obtain the amorphous counterpart of c-Si C by the RF-PECVD technique. Doping experiments were also performed on ordered material using phosphorus and nitrogen as donor impurities and boron and aluminum as acceptor ones. For nitrogen a doping efficiency close to device quality a-Si:H was obtained, the lower activation energy being 0,12 eV with room temperature dark conductivity of 2.10 sup - sup 3 (OMEGA.cm). Nitrogen doping efficiency was higher than phosphorous for all studied samples. For p-type doping, results indicate that, even though the attained conductivity values are not device levels, aluminum doping conducted to a promising shift in the Fermi level. Also, aluminum resulted a more efficie...

Oxygen defect processes in silicon and silicon germanium

KAUST Repository

Chroneos, A.

2015-06-18

Silicon and silicon germanium are the archetypical elemental and alloy semiconductor materials for nanoelectronic, sensor, and photovoltaic applications. The investigation of radiation induced defects involving oxygen, carbon, and intrinsic defects is important for the improvement of devices as these defects can have a deleterious impact on the properties of silicon and silicon germanium. In the present review, we mainly focus on oxygen-related defects and the impact of isovalent doping on their properties in silicon and silicon germanium. The efficacy of the isovalent doping strategies to constrain the oxygen-related defects is discussed in view of recent infrared spectroscopy and density functional theory studies.

Oxygen defect processes in silicon and silicon germanium

KAUST Repository

Chroneos, A.; Sgourou, E. N.; Londos, C. A.; Schwingenschlö gl, Udo

2015-01-01

Silicon and silicon germanium are the archetypical elemental and alloy semiconductor materials for nanoelectronic, sensor, and photovoltaic applications. The investigation of radiation induced defects involving oxygen, carbon, and intrinsic defects is important for the improvement of devices as these defects can have a deleterious impact on the properties of silicon and silicon germanium. In the present review, we mainly focus on oxygen-related defects and the impact of isovalent doping on their properties in silicon and silicon germanium. The efficacy of the isovalent doping strategies to constrain the oxygen-related defects is discussed in view of recent infrared spectroscopy and density functional theory studies.

Dissolved nitrogen in liquid lithium - a problem in fusion reactor chemistry

International Nuclear Information System (INIS)

Hubberstey, P.

1984-01-01

When dissolved in liquid lithium, nitrogen adopts the role filled by oxygen in liquid sodium systems, reacting readily with stainless steel containment materials to form Li 9 CrN 5 as a surface product; extended reaction leads to pronounced corrosion and embrittlement problems. It also interacts with both carbon and silicon impurities forming Li 2 NCN and Li 5 SiN 3 , respectively; it is inert, however, to oxygen impurity. Although dissolved nitrogen reacts with neither the tritium generated in the breeding process nor the lead added to act as a neutron multiplier, its presence may seriously influence tritium recovery processes since it reacts with and hence may poison the majority of the transition metals (Y,Ti,Zr) presently being considered as tritium getter materials. Its reactivity with these metals forms the basis of the hot trapping technique used to remove dissolved nitrogen from liquid lithium systems; cold trapping is ineffective because of its large solubility even at temperatures just above the melting point of pure lithium (453.6K). Whenever possible, the chemistry of nitrogen dissolved in liquid lithium is rationalised using the thermodynamic concepts and its significance to fusion reactor technology stressed. (author)

Physical and electrical characteristics of silicon oxynitride films with various refractive indices

Energy Technology Data Exchange (ETDEWEB)

Liao, Jeng-Hwa; Hsieh, Jung-Yu; Lin, Hsing-Ju; Tang, Wei-Yao; Chiang, Chun-Ling; Yang, Ling-Wu; Yang, Tahone; Chen, Kuang-Chao; Lu, Chih-Yuan [Macronix International Co. Ltd, No 16, Li-Hsin Road, Hsinchu Science Park, Hsinchu 300, Taiwan (China); Lo, Yun-Shan; Wu, Tai-Bor, E-mail: jhliao@mxic.com.t [Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 300, Taiwan (China)

2009-09-07

This study explores the relationship between both the physical and the electrical characteristics of silicon oxynitride (SiON) films and the refractive index. The single wafer rapid thermal process modules were used for low pressure chemical vapour deposition of SiON films. A series of SiON films with refractive index between 1.50 and 1.83 were fabricated. Fourier transform infrared absorption spectroscopy and x-ray photoelectron spectroscopy identified the chemical bonding configurations of different SiON films: the Si-N bonds are replaced by Si-O bonds as the refractive index of the SiON films declines. Moreover, the Si atomic ratio is kept between 35% and 40% while the oxygen atomic ratio increases and the nitrogen atomic ratio decreases as the refractive index of the SiON film declines. The electrical characteristics of different SiON-based silicon-oxide-nitride-oxide-silicon (SONOS) devices suggest that (1) the dielectric constant increases with increasing refractive index of the SiON film and (2) the charge-trap density is inversely proportional to the oxygen concentration in the SiON film. Based on these results, the SiON films with various refractive indices can provide a wider application for silicon-based devices, such as SONOS and MOS devices.

Physical and electrical characteristics of silicon oxynitride films with various refractive indices

International Nuclear Information System (INIS)

Liao, Jeng-Hwa; Hsieh, Jung-Yu; Lin, Hsing-Ju; Tang, Wei-Yao; Chiang, Chun-Ling; Yang, Ling-Wu; Yang, Tahone; Chen, Kuang-Chao; Lu, Chih-Yuan; Lo, Yun-Shan; Wu, Tai-Bor

2009-01-01

This study explores the relationship between both the physical and the electrical characteristics of silicon oxynitride (SiON) films and the refractive index. The single wafer rapid thermal process modules were used for low pressure chemical vapour deposition of SiON films. A series of SiON films with refractive index between 1.50 and 1.83 were fabricated. Fourier transform infrared absorption spectroscopy and x-ray photoelectron spectroscopy identified the chemical bonding configurations of different SiON films: the Si-N bonds are replaced by Si-O bonds as the refractive index of the SiON films declines. Moreover, the Si atomic ratio is kept between 35% and 40% while the oxygen atomic ratio increases and the nitrogen atomic ratio decreases as the refractive index of the SiON film declines. The electrical characteristics of different SiON-based silicon-oxide-nitride-oxide-silicon (SONOS) devices suggest that (1) the dielectric constant increases with increasing refractive index of the SiON film and (2) the charge-trap density is inversely proportional to the oxygen concentration in the SiON film. Based on these results, the SiON films with various refractive indices can provide a wider application for silicon-based devices, such as SONOS and MOS devices.

Characteristics of fracture during the approach process and wear mechanism of a silicon AFM tip

International Nuclear Information System (INIS)

Chung, Koo-Hyun; Lee, Yong-Ha; Kim, Dae-Eun

2005-01-01

The wear of an atomic force microscope (AFM) tip is one of the crucial issues in AFM as well as in other probe-based applications. In this work, wear tests under extremely low normal load using an AFM were conducted. Also, in order to understand the nature of silicon tip wear, the wear characteristics of crystal silicon and amorphous silicon oxide layer were investigated by a high-resolution transmission electron microscope (HRTEM). It was found that fracture of the tip readily occurred due to impact during the approach process. Experimental results showed that the impact should be below 0.1 nN s to avoid significant fracture of the tip. Also, it was observed that wear of the amorphous layer, formed at the end of the tip, occurred at the initial stage of the silicon tip damage process. Based on Archard's wear law, the wear coefficient of the amorphous layer was in the range of 0.009-0.014. As for the wear characteristics of the silicon tip, it was shown that wear occurred gradually under light normal load and the wear rate decreased with increase in the sliding distance. As for the wear mechanism of the silicon tip, oxidation wear was identified to be the most significant. It was shown that the degree of oxidation was higher under high normal load and in a nitrogen environment, oxidation of the silicon tip was reduced

Enhancement in photovoltaic properties of silicon solar cells by surface plasmon effect of palladium nanoparticles

Science.gov (United States)

Atyaoui, Malek; Atyaoui, Atef; Khalifa, Marwen; Elyagoubi, Jalel; Dimassi, Wissem; Ezzaouia, Hatem

2016-04-01

This work presents the surface Plasmon effect of Palladium nanoparticles (Pd NPs) on the photovoltaic properties of silicon solar cells. Pd NPs were deposited on the p-type silicon base of the n+/p junction using a chemical deposition method in an aqueous solution containing Palladium (II) Nitrate (PdNO3)2 and Ammonium Hydroxide (NH4OH) followed by a thermal treatment at 500 °C under nitrogen atmosphere. Chemical composition and surface morphology of the treated silicon base were examined by energy dispersive X-ray (EDX) spectroscopy, scanning electronic microscopy (SEM) and Atomic Force Microscopy (AFM). The effect of the deposited Pd NPs on the electrical properties was evaluated by the internal quantum efficiency (IQE) and current-voltage (I-V) measurements. The results indicate that the formation of the Pd NPs is accompanied by an enhanced light absorption and improved photovoltaic parameters.

Silicon epitaxy on textured double layer porous silicon by LPCVD

International Nuclear Information System (INIS)

Cai Hong; Shen Honglie; Zhang Lei; Huang Haibin; Lu Linfeng; Tang Zhengxia; Shen Jiancang

2010-01-01

Epitaxial silicon thin film on textured double layer porous silicon (DLPS) was demonstrated. The textured DLPS was formed by electrochemical etching using two different current densities on the silicon wafer that are randomly textured with upright pyramids. Silicon thin films were then grown on the annealed DLPS, using low-pressure chemical vapor deposition (LPCVD). The reflectance of the DLPS and the grown silicon thin films were studied by a spectrophotometer. The crystallinity and topography of the grown silicon thin films were studied by Raman spectroscopy and SEM. The reflectance results show that the reflectance of the silicon wafer decreases from 24.7% to 11.7% after texturing, and after the deposition of silicon thin film the surface reflectance is about 13.8%. SEM images show that the epitaxial silicon film on textured DLPS exhibits random pyramids. The Raman spectrum peaks near 521 cm -1 have a width of 7.8 cm -1 , which reveals the high crystalline quality of the silicon epitaxy.

High resolution medium energy ion scattering study of silicon oxidation and oxy nitridation

International Nuclear Information System (INIS)

Gusev, E.P.; Lu, H.C.; Garfunkel, E.; Gustafsson, T.

1998-01-01

Full text: Silicon oxide is likely to remain the material of choice for gate oxides in microelectronics for the foreseeable future. As device become ever smaller and faster, the thickness of these layers in commercial products is predicted to be less than 50 Angstroms in just a few years. An understanding of such devices will therefore likely to be based on microscopic concepts and should now be investigated by atomistic techniques. With medium energy ion scattering (MEIS) using an electrostatic energy analyzer, depth profiling of thin (<60 Angstroms) silicon oxide films on Si(100) with 3 - 5 Angstroms depth resolution in the near region has been done. The growth mechanism of thin oxide films on Si(100) has been studied, using sequential oxygen isotope exposures. It is found that the oxide films are stoichiometric to within approx. 10 Angstroms of the interface. It is also found that the oxidation reactions occur at the surface, in the transition region and at interface, with only the third region being included in the conventional (Deal-Grove) model for oxide formation. Nitrogen is sometimes added to gate oxides, as it has been found empirically that his improves some of the electrical properties. The role, location and even the amount of nitrogen that exists in such films are poorly understood, and represent interesting analytical challenges. MEIS data will be presented that address these questions, measured for a number of different processing conditions. We have recently demonstrated how to perform nitrogen nano-engineering in such ultrathin gate dielectrics, and these results will also be discussed

Synthesis of low-oxide blue luminescent alkyl-functionalized silicon nanoparticles with no nitrogen containing surfactant

International Nuclear Information System (INIS)

Thomas, Jason A.; Ashby, Shane P.; Huld, Frederik; Pennycook, Timothy J.; Chao, Yimin

2015-01-01

Of ever growing interest in the fields of physical chemistry and materials science, silicon nanoparticles show a great deal of potential. Methods for their synthesis are, however, often hazardous, expensive or otherwise impractical. In the literature, there is a safe, fast and cheap inverse micelle-based method for the production of alkyl-functionalized blue luminescent silicon nanoparticles, which nonetheless found limitations, due to undesirable Si-alkoxy and remaining Si–H functionalization. In the following work, these problems are addressed, whereby an optimisation of the reaction mechanism encourages more desirable capping, and the introduction of alcohol is replaced by the use of anhydrous copper (II) chloride. The resulting particles, when compared with their predecessors through a myriad of spectroscopic techniques, are shown to have greatly reduced levels of ‘undesirable’ capping, with a much lower surface oxide level; whilst also maintaining long-term air stability, strong photoluminescence and high yields

Synthesis of low-oxide blue luminescent alkyl-functionalized silicon nanoparticles with no nitrogen containing surfactant

Energy Technology Data Exchange (ETDEWEB)

Thomas, Jason A.; Ashby, Shane P.; Huld, Frederik [University of East Anglia, School of Chemistry (United Kingdom); Pennycook, Timothy J. [SuperSTEM Laboratory, STFC Daresbury Campus (United Kingdom); Chao, Yimin, E-mail: y.chao@uea.ac.uk [University of East Anglia, School of Chemistry (United Kingdom)

2015-05-15

Of ever growing interest in the fields of physical chemistry and materials science, silicon nanoparticles show a great deal of potential. Methods for their synthesis are, however, often hazardous, expensive or otherwise impractical. In the literature, there is a safe, fast and cheap inverse micelle-based method for the production of alkyl-functionalized blue luminescent silicon nanoparticles, which nonetheless found limitations, due to undesirable Si-alkoxy and remaining Si–H functionalization. In the following work, these problems are addressed, whereby an optimisation of the reaction mechanism encourages more desirable capping, and the introduction of alcohol is replaced by the use of anhydrous copper (II) chloride. The resulting particles, when compared with their predecessors through a myriad of spectroscopic techniques, are shown to have greatly reduced levels of ‘undesirable’ capping, with a much lower surface oxide level; whilst also maintaining long-term air stability, strong photoluminescence and high yields.

Effect of mixture ratios and nitrogen carrier gas flow rates on the morphology of carbon nanotube structures grown by CVD

CSIR Research Space (South Africa)

Malgas, GF

2008-02-01

Full Text Available This paper reports on the growth of carbon nanotubes (CNTs) by thermal Chemical Vapour Deposition (CVD) and investigates the effects of nitrogen carrier gas flow rates and mixture ratios on the morphology of CNTs on a silicon substrate by vaporizing...

Colloidal characterization of ultrafine silicon carbide and silicon nitride powders

Science.gov (United States)

Whitman, Pamela K.; Feke, Donald L.

1986-01-01

The effects of various powder treatment strategies on the colloid chemistry of aqueous dispersions of silicon carbide and silicon nitride are examined using a surface titration methodology. Pretreatments are used to differentiate between the true surface chemistry of the powders and artifacts resulting from exposure history. Silicon nitride powders require more extensive pretreatment to reveal consistent surface chemistry than do silicon carbide powders. As measured by titration, the degree of proton adsorption from the suspending fluid by pretreated silicon nitride and silicon carbide powders can both be made similar to that of silica.

Multiphoton-Excited Fluorescence of Silicon-Vacancy Color Centers in Diamond

Science.gov (United States)

Higbie, J. M.; Perreault, J. D.; Acosta, V. M.; Belthangady, C.; Lebel, P.; Kim, M. H.; Nguyen, K.; Demas, V.; Bajaj, V.; Santori, C.

2017-05-01

Silicon-vacancy color centers in nanodiamonds are promising as fluorescent labels for biological applications, with a narrow, nonbleaching emission line at 738 nm. Two-photon excitation of this fluorescence offers the possibility of low-background detection at significant tissue depth with high three-dimensional spatial resolution. We measure the two-photon fluorescence cross section of a negatively charged silicon vacancy (Si -V- ) in ion-implanted bulk diamond to be 0.74 (19 )×10-50 cm4 s /photon at an excitation wavelength of 1040 nm. Compared to the diamond nitrogen-vacancy center, the expected detection threshold of a two-photon excited Si -V center is more than an order of magnitude lower, largely due to its much narrower linewidth. We also present measurements of two- and three-photon excitation spectra, finding an increase in the two-photon cross section with decreasing wavelength, and we discuss the physical interpretation of the spectra in the context of existing models of the Si -V energy-level structure.

Atomic state and characterization of nitrogen at the SiC/SiO2 interface

International Nuclear Information System (INIS)

Xu, Y.; Garfunkel, E. L.; Zhu, X.; Lee, H. D.; Xu, C.; Shubeita, S. M.; Gustafsson, T.; Ahyi, A. C.; Sharma, Y.; Williams, J. R.; Lu, W.; Ceesay, S.; Tuttle, B. R.; Pantelides, S. T.; Wan, A.; Feldman, L. C.

2014-01-01

We report on the concentration, chemical bonding, and etching behavior of N at the SiC(0001)/SiO 2 interface using photoemission, ion scattering, and computational modeling. For standard NO processing of a SiC MOSFET, a sub-monolayer of nitrogen is found in a thin inter-layer between the substrate and the gate oxide (SiO 2 ). Photoemission shows one main nitrogen related core-level peak with two broad, higher energy satellites. Comparison to theory indicates that the main peak is assigned to nitrogen bound with three silicon neighbors, with second nearest neighbors including carbon, nitrogen, and oxygen atoms. Surprisingly, N remains at the surface after the oxide was completely etched by a buffered HF solution. This is in striking contrast to the behavior of Si(100) undergoing the same etching process. We conclude that N is bound directly to the substrate SiC, or incorporated within the first layers of SiC, as opposed to bonding within the oxide network. These observations provide insights into the chemistry and function of N as an interface passivating additive in SiC MOSFETs

Symmetry and structure of N-O shallow donor complexes in silicon

International Nuclear Information System (INIS)

Alt, H.Ch.; Wagner, H.E.

2012-01-01

Shallow donors in silicon related to nitrogen-oxygen complexes have been investigated by piezospectroscopy of their hydrogenic transitions in the far infrared. Complete stress dependences up to 0.25 GPa were obtained for the 1s→2p 0 and 1s→2p ± transitions of the most prominent members of the (N, O)-family, N-O-3 and N-O-5. Very unusual for shallow donors in silicon, the symmetry of the ground state wave function is T 2 -like. The lifting of orientational degeneracy for stress in the 〈1 0 0〉, 〈1 1 1〉, and 〈1 1 0〉 directions is compatible with a C 2v defect symmetry. Data from the other species of the (N, O)-family are indicative for the same symmetry. The microscopic structure of these centers, in part contradictory to present theoretical models, is discussed.

Arsenic implantation into polycrystalline silicon and diffusion to silicon substrate

International Nuclear Information System (INIS)

Tsukamoto, K.; Akasaka, Y.; Horie, K.

1977-01-01

Arsenic implantation into polycrystalline silicon and drive-in diffusion to silicon substrate have been investigated by MeV He + backscattering analysis and also by electrical measurements. The range distributions of arsenic implanted into polycrystalline silicon are well fitted to Gaussian distributions over the energy range 60--350 keV. The measured values of R/sub P/ and ΔR/sub P/ are about 10 and 20% larger than the theoretical predictions, respectively. The effective diffusion coefficient of arsenic implanted into polycrystalline silicon is expressed as D=0.63 exp[(-3.22 eV/kT)] and is independent of the arsenic concentration. The drive-in diffusion of arsenic from the implanted polycrystalline silicon layer into the silicon substrate is significantly affected by the diffusion atmosphere. In the N 2 atmosphere, a considerable amount of arsenic atoms diffuses outward to the ambient. The outdiffusion can be suppressed by encapsulation with Si 3 N 4 . In the oxidizing atmosphere, arsenic atoms are driven inward by growing SiO 2 due to the segregation between SiO 2 and polycrystalline silicon, and consequently the drive-in diffusion of arsenic is enhanced. At the interface between the polycrystalline silicon layer and the silicon substrate, arsenic atoms are likely to segregate at the polycrystalline silicon side

Porous silicon: silicon quantum dots for photonic applications

International Nuclear Information System (INIS)

Pavesi, L.; Guardini, R.

1996-01-01

Porous silicon formation and structure characterization are briefly illustrated. Its luminescence properties rae presented and interpreted on the basis of exciton recombination in quantum dot structures: the trap-controlled hopping mechanism is used to describe the recombination dynamics. Porous silicon application to photonic devices is considered: porous silicon multilayer in general, and micro cavities in particular are described. The present situation in the realization of porous silicon LEDs is considered, and future developments in this field of research are suggested. (author). 30 refs., 30 figs., 13 tabs

Nano-Welding of Multi-Walled Carbon Nanotubes on Silicon and Silica Surface by Laser Irradiation

Directory of Open Access Journals (Sweden)

Yanping Yuan

2016-02-01

Full Text Available In this study, a continuous fiber laser (1064 nm wavelength, 30 W/cm2 is used to irradiate multi-walled carbon nanotubes (MWCNTs on different substrate surfaces. Effects of substrates on nano-welding of MWCNTs are investigated by scanning electron microscope (SEM. For MWCNTs on silica, after 3 s irradiation, nanoscale welding with good quality can be achieved due to breaking C–C bonds and formation of new graphene layers. While welding junctions can be formed until 10 s for the MWCNTs on silicon, the difference of irradiation time to achieve welding is attributed to the difference of thermal conductivity for silica and silicon. As the irradiation time is prolonged up to 12.5 s, most of the MWCNTs are welded to a silicon substrate, which leads to their frameworks of tube walls on the silicon surface. This is because the accumulation of absorbed energy makes the temperature rise. Then chemical reactions among silicon, carbon and nitrogen occur. New chemical bonds of Si–N and Si–C achieve the welding between the MWCNTs and silicon. Vibration modes of Si3N4 appear at peaks of 363 cm−1 and 663 cm−1. There are vibration modes of SiC at peaks of 618 cm−1, 779 cm−1 and 973 cm−1. The experimental observation proves chemical reactions and the formation of Si3N4 and SiC by laser irradiation.

Nano-Welding of Multi-Walled Carbon Nanotubes on Silicon and Silica Surface by Laser Irradiation

Science.gov (United States)

Yuan, Yanping; Chen, Jimin

2016-01-01

In this study, a continuous fiber laser (1064 nm wavelength, 30 W/cm2) is used to irradiate multi-walled carbon nanotubes (MWCNTs) on different substrate surfaces. Effects of substrates on nano-welding of MWCNTs are investigated by scanning electron microscope (SEM). For MWCNTs on silica, after 3 s irradiation, nanoscale welding with good quality can be achieved due to breaking C–C bonds and formation of new graphene layers. While welding junctions can be formed until 10 s for the MWCNTs on silicon, the difference of irradiation time to achieve welding is attributed to the difference of thermal conductivity for silica and silicon. As the irradiation time is prolonged up to 12.5 s, most of the MWCNTs are welded to a silicon substrate, which leads to their frameworks of tube walls on the silicon surface. This is because the accumulation of absorbed energy makes the temperature rise. Then chemical reactions among silicon, carbon and nitrogen occur. New chemical bonds of Si–N and Si–C achieve the welding between the MWCNTs and silicon. Vibration modes of Si3N4 appear at peaks of 363 cm−1 and 663 cm−1. There are vibration modes of SiC at peaks of 618 cm−1, 779 cm−1 and 973 cm−1. The experimental observation proves chemical reactions and the formation of Si3N4 and SiC by laser irradiation. PMID:28344293

Silicon-Rich Silicon Carbide Hole-Selective Rear Contacts for Crystalline-Silicon-Based Solar Cells.

Science.gov (United States)

Nogay, Gizem; Stuckelberger, Josua; Wyss, Philippe; Jeangros, Quentin; Allebé, Christophe; Niquille, Xavier; Debrot, Fabien; Despeisse, Matthieu; Haug, Franz-Josef; Löper, Philipp; Ballif, Christophe

2016-12-28

The use of passivating contacts compatible with typical homojunction thermal processes is one of the most promising approaches to realizing high-efficiency silicon solar cells. In this work, we investigate an alternative rear-passivating contact targeting facile implementation to industrial p-type solar cells. The contact structure consists of a chemically grown thin silicon oxide layer, which is capped with a boron-doped silicon-rich silicon carbide [SiC x (p)] layer and then annealed at 800-900 °C. Transmission electron microscopy reveals that the thin chemical oxide layer disappears upon thermal annealing up to 900 °C, leading to degraded surface passivation. We interpret this in terms of a chemical reaction between carbon atoms in the SiC x (p) layer and the adjacent chemical oxide layer. To prevent this reaction, an intrinsic silicon interlayer was introduced between the chemical oxide and the SiC x (p) layer. We show that this intrinsic silicon interlayer is beneficial for surface passivation. Optimized passivation is obtained with a 10-nm-thick intrinsic silicon interlayer, yielding an emitter saturation current density of 17 fA cm -2 on p-type wafers, which translates into an implied open-circuit voltage of 708 mV. The potential of the developed contact at the rear side is further investigated by realizing a proof-of-concept hybrid solar cell, featuring a heterojunction front-side contact made of intrinsic amorphous silicon and phosphorus-doped amorphous silicon. Even though the presented cells are limited by front-side reflection and front-side parasitic absorption, the obtained cell with a V oc of 694.7 mV, a FF of 79.1%, and an efficiency of 20.44% demonstrates the potential of the p + /p-wafer full-side-passivated rear-side scheme shown here.

Compressive creep of silicon nitride

International Nuclear Information System (INIS)

Silva, C.R.M. da; Melo, F.C.L. de; Cairo, C.A.; Piorino Neto, F.

1990-01-01

Silicon nitride samples were formed by pressureless sintering process, using neodymium oxide and a mixture of neodymium oxide and yttrio oxide as sintering aids. The short term compressive creep behaviour was evaluated over a stress range of 50-300 MPa and temperature range 1200 - 1350 0 C. Post-sintering heat treatments in nitrogen with a stepwise decremental variation of temperature were performed in some samples and microstructural analysis by X-ray diffraction and transmission electron microscopy showed that the secondary crystalline phase which form from the remnant glass are dependent upon composition and percentage of aditives. Stress exponent values near to unity were obtained for materials with low glass content suggesting grain boundary diffusion accommodation processes. Cavitation will thereby become prevalent with increase in stress, temperature and decrease in the degree of crystallization of the grain boundary phase. (author) [pt

Deterministic fabrication of dielectric loaded waveguides coupled to single nitrogen vacancy centers in nanodiamonds

DEFF Research Database (Denmark)

Siampour, Hamidreza; Kumar, Shailesh; Bozhevolnyi, Sergey I.

We report on the fabrication of dielectric-loaded-waveguides which are excited by single-nitrogen-vacancy (NV) centers in nanodiamonds. The waveguides are deterministically written onto the pre-characterized nanodiamonds by using electron beam lithography of hydrogen silsesquioxane (HSQ) resist...... on silver-coated silicon substrate. Change in lifetime for NV-centers is observed after fabrication of waveguides and an antibunching in correlation measurement confirms that nanodiamonds contain single NV-centers....

Opto-electronic properties and light-emitting device application of widegap layered oxychalcogenides: LaCuOCh (Ch=chalcogen) and La2CdO2Se2

International Nuclear Information System (INIS)

Hiramatsu, Hidenori; Hirano, Masahiro; Kamioka, Hayato; Ueda, Kazushige; Ohta, Hiromichi; Kamiya, Toshio; Hosono, Hideo

2006-01-01

Electronic and optical properties of widegap oxychalcogenides, LaCuOCh (Ch chalcogen) and La 2 CdO 2 Se 2 , are reviewed with a focus on those relevant to their layered crystal structures, including high hole mobility, degenerate p-type conduction, room temperature exciton, and large third order optical nonlinearity. In particular, the widegap p-type metallic conduction was realized in Mg-doped LaCuOSe: the first demonstration among any class of widegap materials including GaN:Mg. Furthermore, we demonstrate the room temperature operation of a blue light-emitting diode using a pn hetero-junction composed of a LaCuOSe epilayer and an n-type amorphous InGaZn 5 O 8 . Those results strongly suggest that a series of the layered oxychalcogenides are applicable to the light-emitting layers in opto-electronic devices that operate in the ultraviolet-blue region as well as to transparent p-type conductors. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (Abstract Copyright [2006], Wiley Periodicals, Inc.)

Geochemistry of silicon isotopes

Energy Technology Data Exchange (ETDEWEB)

Ding, Tiping; Li, Yanhe; Gao, Jianfei; Hu, Bin [Chinese Academy of Geological Science, Beijing (China). Inst. of Mineral Resources; Jiang, Shaoyong [China Univ. of Geosciences, Wuhan (China).

2018-04-01

Silicon is one of the most abundant elements in the Earth and silicon isotope geochemistry is important in identifying the silicon source for various geological bodies and in studying the behavior of silicon in different geological processes. This book starts with an introduction on the development of silicon isotope geochemistry. Various analytical methods are described and compared with each other in detail. The mechanisms of silicon isotope fractionation are discussed, and silicon isotope distributions in various extraterrestrial and terrestrial reservoirs are updated. Besides, the applications of silicon isotopes in several important fields are presented.

DEPOSITION AND PROPERTY CHARACTERISATION OF TaN COATINGS DEPOSITED WITH DIFFERENT NITROGEN CONTENTS

Directory of Open Access Journals (Sweden)

Gilberto Bejarano Gaitán

Full Text Available This study focused on the study of the influence of nitrogen content on the microstructure, chemical composition, mechanical and tribological properties of TaN coatings deposited on 420 stainless steel and silicon samples (100 using the magnetron sputtering technique. For the deposition of the TaN coatings an argon/nitrogen atmosphere was used, varying the nitrogen flux between 12% and 25%. For the coating characterization, scanning electron microscopy, energydispersive X-ray spectroscopy, atomic force microscopy, X-ray diffraction (XRD, micro-Raman spectroscopy, a microhardness tester, and a ball on disc tribometer were used. A refining of the columnar structure of the coatings, accompanied by a decrease in their thickness with the increased nitrogen content was observed. Initially, fcc-TaN (111 cubic phase growth was observed; this phase was changed to the fcc-TaN (200 above N2 12%. For contents greater than N2 18%, another nitrogen-rich phase was formed and the system tended towards amorphicity, particularly for a coating with N2 25% content. The TaN-1sample deposited with N2 12% in the gas mixture presented the highest micro-hardness value with 21.3GPa and the lowest friction coefficient and wear rate with 0.02 and 1.82x10-7 (mm³/Nm, respectively. From the obtained results, an important relationship between the microstructural, mechanical and tribological properties of the coated samples and their nitrogen content was observed.

Influence of implantation energy on the electrical properties of ultrathin gate oxides grown on nitrogen implanted Si substrates

International Nuclear Information System (INIS)

Kapetanakis, E.; Skarlatos, D.; Tsamis, C.; Normand, P.; Tsoukalas, D.

2003-01-01

Metal-oxide-semiconductor tunnel diodes with gate oxides, in the range of 2.5-3.5 nm, grown either on 25 or 3 keV nitrogen-implanted Si substrates at (0.3 or 1) x10 15 cm -2 dose, respectively, are investigated. The dependence of N 2 + ion implant energy on the electrical quality of the growing oxide layers is studied through capacitance, equivalent parallel conductance, and gate current measurements. Superior electrical characteristics in terms of interface state trap density, leakage current, and breakdown fields are found for oxides obtained through 3 keV nitrogen implants. These findings together with the full absence of any extended defect in the silicon substrate make the low-energy nitrogen implantation technique an attractive option for reproducible low-cost growth of nanometer-thick gate oxides

Enthalpy of sublimation as measured using a silicon oscillator

Science.gov (United States)

Shakeel, Hamza; Pomeroy, J. M.

In this study, we report the enthalpy of sublimation of common gases (nitrogen, oxygen, argon, carbon dioxide, neon, krypton, xenon, and water vapor) using a large area silicon oscillator with a sub-ng (~0.027 ng/cm2) mass sensitivity. The double paddle oscillator design enables high frequency stability (17 ppb) at cryogenic temperatures and provides a consistent technique for enthalpy measurements. The enthalpies of sublimation are derived from the rate of mass loss during programmed thermal desorption and are detected as a change in the resonance frequency of the self-tracking oscillator. These measured enthalpy values show excellent agreement with the accepted literature values.

Synthesis of Si epitaxial layers from technical silicon by liquid-phase epitaxy method

International Nuclear Information System (INIS)

Ibragimov, Sh.I.; Saidov, A.S.; Sapaev, B.; Horvat, M.A.

2004-01-01

�·cm, concentration of carriers up to n∼4.33·10 17 cm -3 , mobility up to μ∼206 cm 2 /V·s, life time up to τ∼(5-10)·10 -6 s. We had been investigated spectral sensitivity and current-voltage characteristic of the epitaxial layer brought up from technical silicon + stannum at room temperature and at nitrogen one. The preliminary results of photoelectric measurement show advantage of the obtained structures for semiconductor instrument manufacture

Vertical integration of high-Q silicon nitride microresonators into silicon-on-insulator platform.

Science.gov (United States)

Li, Qing; Eftekhar, Ali A; Sodagar, Majid; Xia, Zhixuan; Atabaki, Amir H; Adibi, Ali

2013-07-29

We demonstrate a vertical integration of high-Q silicon nitride microresonators into the silicon-on-insulator platform for applications at the telecommunication wavelengths. Low-loss silicon nitride films with a thickness of 400 nm are successfully grown, enabling compact silicon nitride microresonators with ultra-high intrinsic Qs (~ 6 × 10(6) for 60 μm radius and ~ 2 × 10(7) for 240 μm radius). The coupling between the silicon nitride microresonator and the underneath silicon waveguide is based on evanescent coupling with silicon dioxide as buffer. Selective coupling to a desired radial mode of the silicon nitride microresonator is also achievable using a pulley coupling scheme. In this work, a 60-μm-radius silicon nitride microresonator has been successfully integrated into the silicon-on-insulator platform, showing a single-mode operation with an intrinsic Q of 2 × 10(6).

Analytical and Experimental Evaluation of Joining Silicon Carbide to Silicon Carbide and Silicon Nitride to Silicon Nitride for Advanced Heat Engine Applications Phase II

Energy Technology Data Exchange (ETDEWEB)

Sundberg, G.J.

1994-01-01

Techniques were developed to produce reliable silicon nitride to silicon nitride (NCX-5101) curved joins which were used to manufacture spin test specimens as a proof of concept to simulate parts such as a simple rotor. Specimens were machined from the curved joins to measure the following properties of the join interlayer: tensile strength, shear strength, 22 C flexure strength and 1370 C flexure strength. In parallel, extensive silicon nitride tensile creep evaluation of planar butt joins provided a sufficient data base to develop models with accurate predictive capability for different geometries. Analytical models applied satisfactorily to the silicon nitride joins were Norton's Law for creep strain, a modified Norton's Law internal variable model and the Monkman-Grant relationship for failure modeling. The Theta Projection method was less successful. Attempts were also made to develop planar butt joins of siliconized silicon carbide (NT230).

Electrical leakage phenomenon in heteroepitaxial cubic silicon carbide on silicon

Science.gov (United States)

Pradeepkumar, Aiswarya; Zielinski, Marcin; Bosi, Matteo; Verzellesi, Giovanni; Gaskill, D. Kurt; Iacopi, Francesca

2018-06-01

Heteroepitaxial 3C-SiC films on silicon substrates are of technological interest as enablers to integrate the excellent electrical, electronic, mechanical, thermal, and epitaxial properties of bulk silicon carbide into well-established silicon technologies. One critical bottleneck of this integration is the establishment of a stable and reliable electronic junction at the heteroepitaxial interface of the n-type SiC with the silicon substrate. We have thus investigated in detail the electrical and transport properties of heteroepitaxial cubic silicon carbide films grown via different methods on low-doped and high-resistivity silicon substrates by using van der Pauw Hall and transfer length measurements as test vehicles. We have found that Si and C intermixing upon or after growth, particularly by the diffusion of carbon into the silicon matrix, creates extensive interstitial carbon traps and hampers the formation of a stable rectifying or insulating junction at the SiC/Si interface. Although a reliable p-n junction may not be realistic in the SiC/Si system, we can achieve, from a point of view of the electrical isolation of in-plane SiC structures, leakage suppression through the substrate by using a high-resistivity silicon substrate coupled with deep recess etching in between the SiC structures.

Influence of intermediate layers on the surface condition of laser crystallized silicon thin films and solar cell performance

Energy Technology Data Exchange (ETDEWEB)

Höger, Ingmar, E-mail: ingmar.hoeger@ipht-jena.de; Gawlik, Annett; Brückner, Uwe; Andrä, Gudrun [Leibniz-Institut für Photonische Technologien, PF 100239, 07702 Jena (Germany); Himmerlich, Marcel; Krischok, Stefan [Institut für Mikro-und Nanotechnologien, Technische Universität Ilmenau, PF 100565, 98684 Ilmenau (Germany)

2016-01-28

The intermediate layer (IL) between glass substrate and silicon plays a significant role in the optimization of multicrystalline liquid phase crystallized silicon thin film solar cells on glass. This study deals with the influence of the IL on the surface condition and the required chemical surface treatment of the crystallized silicon (mc-Si), which is of particular interest for a-Si:H heterojunction thin film solar cells. Two types of IL were investigated: sputtered silicon nitride (SiN) and a layer stack consisting of silicon nitride and silicon oxide (SiN/SiO). X-ray photoelectron spectroscopy measurements revealed the formation of silicon oxynitride (SiO{sub x}N{sub y}) or silicon oxide (SiO{sub 2}) layers at the surface of the mc-Si after liquid phase crystallization on SiN or SiN/SiO, respectively. We propose that SiO{sub x}N{sub y} formation is governed by dissolving nitrogen from the SiN layer in the silicon melt, which segregates at the crystallization front during crystallization. This process is successfully hindered, when additional SiO layers are introduced into the IL. In order to achieve solar cell open circuit voltages above 500 mV, a removal of the formed SiO{sub x}N{sub y} top layer is required using sophisticated cleaning of the crystallized silicon prior to a-Si:H deposition. However, solar cells crystallized on SiN/SiO yield high open circuit voltage even when a simple wet chemical surface treatment is applied. The implementation of SiN/SiO intermediate layers facilitates the production of mesa type solar cells with open circuit voltages above 600 mV and a power conversion efficiency of 10%.

Fluorescence and thermoluminescence in silicon oxide films rich in silicon

International Nuclear Information System (INIS)

Berman M, D.; Piters, T. M.; Aceves M, M.; Berriel V, L. R.; Luna L, J. A.

2009-10-01

In this work we determined the fluorescence and thermoluminescence (TL) creation spectra of silicon rich oxide films (SRO) with three different silicon excesses. To study the TL of SRO, 550 nm of SRO film were deposited by Low Pressure Chemical Vapor Deposition technique on N-type silicon substrates with resistivity in the order of 3 to 5 Ω-cm with silicon excess controlled by the ratio of the gases used in the process, SRO films with Ro= 10, 20 and 30 (12-6% silicon excess) were obtained. Then, they were thermally treated in N 2 at high temperatures to diffuse and homogenize the silicon excess. In the fluorescence spectra two main emission regions are observed, one around 400 nm and one around 800 nm. TL creation spectra were determined by plotting the integrated TL intensity as function of the excitation wavelength. (Author)

Buried oxide layer in silicon

Science.gov (United States)

Sadana, Devendra Kumar; Holland, Orin Wayne

2001-01-01

A process for forming Silicon-On-Insulator is described incorporating the steps of ion implantation of oxygen into a silicon substrate at elevated temperature, ion implanting oxygen at a temperature below 200.degree. C. at a lower dose to form an amorphous silicon layer, and annealing steps to form a mixture of defective single crystal silicon and polycrystalline silicon or polycrystalline silicon alone and then silicon oxide from the amorphous silicon layer to form a continuous silicon oxide layer below the surface of the silicon substrate to provide an isolated superficial layer of silicon. The invention overcomes the problem of buried isolated islands of silicon oxide forming a discontinuous buried oxide layer.

Deposition of silicon oxynitride films by low energy ion beam assisted nitridation at room temperature

Science.gov (United States)

Youroukov, S.; Kitova, S.; Danev, G.

2008-05-01

The possibility is studied of growing thin silicon oxynitride films by e-gun evaporation of SiO and SiO2 together with concurrent bombardment with low energy N2+ ions from a cyclotron resonance (ECR) source at room temperature of substrates. The degree of nitridation and oxidation of the films is investigated by means of X-ray spectroscopy. The optical characteristics of the films, their environmental stability and adhesion to different substrates are examined. The results obtained show than the films deposited are transparent. It is found that in the case of SiO evaporation with concurrent N2+ ion bombardment, reactive implantation of nitrogen within the films takes place at room temperature of the substrate with the formation of a new silicon oxynitride compound even at low ion energy (150-200 eV).

Nonlinear silicon photonics

Science.gov (United States)

Tsia, Kevin K.; Jalali, Bahram

2010-05-01

An intriguing optical property of silicon is that it exhibits a large third-order optical nonlinearity, with orders-ofmagnitude larger than that of silica glass in the telecommunication band. This allows efficient nonlinear optical interaction at relatively low power levels in a small footprint. Indeed, we have witnessed a stunning progress in harnessing the Raman and Kerr effects in silicon as the mechanisms for enabling chip-scale optical amplification, lasing, and wavelength conversion - functions that until recently were perceived to be beyond the reach of silicon. With all the continuous efforts developing novel techniques, nonlinear silicon photonics is expected to be able to reach even beyond the prior achievements. Instead of providing a comprehensive overview of this field, this manuscript highlights a number of new branches of nonlinear silicon photonics, which have not been fully recognized in the past. In particular, they are two-photon photovoltaic effect, mid-wave infrared (MWIR) silicon photonics, broadband Raman effects, inverse Raman scattering, and periodically-poled silicon (PePSi). These novel effects and techniques could create a new paradigm for silicon photonics and extend its utility beyond the traditionally anticipated applications.

Liquid phase epitaxial growth of silicon on porous silicon for photovoltaic applications

International Nuclear Information System (INIS)

Berger, S.; Quoizola, S.; Fave, A.; Kaminski, A.; Perichon, S.; Barbier, D.; Laugier, A.

2001-01-01

The aim of this experiment is to grow a thin silicon layer ( 2 atmosphere, and finally LPE silicon growth with different temperature profiles in order to obtain a silicon layer on the sacrificial porous silicon (p-Si). We observed a pyramidal growth on the surface of the (100) porous silicon but the coalescence was difficult to obtain. However, on a p-Si (111) oriented wafer, homogeneous layers were obtained. (orig.)

Operation of low-energy ion implanters for Si, N, C ion implantation into silicon and glassy carbon

International Nuclear Information System (INIS)

Carder, D.A.; Markwitz, A.

2009-01-01

This report details the operation of the low-energy ion implanters at GNS Science for C, N and Si implantations. Two implanters are presented, from a description of the components through to instructions for operation. Historically the implanters have been identified with the labels 'industrial' and 'experimental'. However, the machines only differ significantly in the species of ions available for implantation and sample temperature during implantation. Both machines have been custom designed for research purposes, with a wide range of ion species available for ion implantation and the ability to implant two ions into the same sample at the same time from two different ion sources. A fast sample transfer capability and homogenous scanning profiles are featured in both cases. Samples up to 13 mm 2 can be implanted, with the ability to implant at temperatures down to liquid nitrogen temperatures. The implanters have been used to implant 28 Si + , 14 N + and 12 C + into silicon and glassy carbon substrates. Rutherford backscattering spectroscopy has been used to analyse the implanted material. From the data a Si 30 C 61 N 9 layer was measured extending from the surface to a depth of about 77 ± 2 nm for (100) silicon implanted with 12 C + and 14 N + at multiple energies. Silicon and nitrogen ion implantation into glassy carbon produced a Si (40.5 %), C (38 %), N (19.5 %) and O (2%) layer centred around a depth of 50 ± 2 nm from the surface. (author). 8 refs., 20 figs

Solid state photochemistry. Subpanel A-2(b): Metastability in hydrogenated amorphous silicon

Energy Technology Data Exchange (ETDEWEB)

Carlson, D. [Solarex Corporation, Newton, PA (United States)

1996-09-01

All device quality amorphous silicon based materials exhibit degradation in electronic properties when exposed to sunlight. The photo-induced defects are associated with Si dangling bonds that are created by the recombination and/or trapping of photogenerated carriers. The defects are metastable and can be annealed out at temperatures of about 150 to 200 degrees Centigrade. The density of metastable defects is larger in films that are contaminated with > 10{sup 19} per cubic cm of impurities such as oxygen, carbon and nitrogen. However, recent experimental results indicate that some metastable defects are still present in films with very low impurity concentrations. The photo-induced defects typically saturate after 100 to 1000 hours of exposure to one sun illumination depending on the deposition conditions. There is also experimental evidence that photo-induced structural changes are occurring in the amorphous silicon based materials and that hydrogen may be playing an important role in both the photo-induced structural changes and in the creation of metastable defects.

Thermoluminescence properties of undoped and nitrogen-doped CVD diamond exposed to gamma radiation

International Nuclear Information System (INIS)

Barboza-Flores, M.; Gastelum, S.; Cruz-Zaragoza, E.; Melendrez, R.; Chernov, V.; Pedroza-Montero, M.; Favalli, A.

2008-01-01

It is known that the thermoluminescence (TL) performance of CVD diamond depends on the impurity concentration and doping materials introduced during growing. We report on the TL properties of undoped and 750 ppm nitrogen-doped CVD diamond grown on (0 0 1) silicon substrate. The samples were exposed to gamma radiation from a Gammacell 200 Nordion irradiator in the 10-500 Gy dose range at 627 mGy/min dose rate. The nitrogen-doped CVD diamond sample exhibited a TL glow curve peaked around 537 K and a small shoulder about 411 K and a linear dose behavior in the 10-60 Gy dose range. In contrast, the undoped specimen showed a 591 K peaked TL glow curve and linear dose response for 10-100 Gy doses. However, both samples displayed a non-linear dose response for doses higher than 100 Gy. The doping effects seem to cause a higher TL efficiency, which may be attributed to the differences in the diamond bonding and amorphous carbon on the CVD samples as well as to the presence of nitrogen. In addition, the nitrogen content may produce some structural and morphological surface effects, which may account for the distinctive TL features and dose response of the diamond samples

Teores de silício no solo e na planta de arroz de terras altas com diferentes doses de adubação silicatada e nitrogenada Silicon contents in soil and in highland rice plants under different doses of silicon and nitrogen fertilization

Directory of Open Access Journals (Sweden)

M. Mauad

2003-10-01

Full Text Available O Si não é elemento essencial para o crescimento e desenvolvimento das plantas, porém sua absorção pode trazer inúmeros benefícios para culturas acumuladoras de Si, como o arroz. Entretanto, considerando o avançado grau de intemperização em que se encontram os solos tropicais, os teores de Si disponível nestes solos são baixos. O objetivo deste trabalho foi avaliar, na cultura do arroz de terras altas sob condições de túnel plástico, o efeito de doses de Si e de N na produção de matéria seca, na produtividade de grãos, no teor de N, nos teores de Si no solo e na planta e na quantidade de Si extraído do solo. Os tratamentos foram constituídos por três doses de N (5, 75 e 150 mg kg-1 de N, tendo como fonte a uréia e quatro doses de Si (0, 200, 400 e 600 mg kg-1 de SiO2 tendo como fonte o silicato de cálcio (Wollastonita. O delineamento experimental utilizado foi inteiramente casualizado com esquema fatorial 3 x 4, com cinco repetições. O acúmulo de matéria seca, a produtividade de grãos e os teores de N na planta não foram influenciados pelas doses de Si. O incremento da adubação nitrogenada aumentou a produção de matéria seca, a produtividade de grãos e o teor de N na planta, porém nenhum efeito foi encontrado para os teores de Si no solo. Houve interação N x Si para os teores de Si na planta e para a quantidade de Si acumulado pelas plantas.The element Silicon is not deemed essential for plant growth and development, but its absorption can benefit cumulative cultures like rice greatly. The Si content of tropical soils, however, is very low, due to the advanced weathering degree. The objective of this work was to evaluate the growth of rice plants in highlands under plastic tunnels and the effects of nitrogen (N and Si doses on dry matter production, grain productivity, N content; Si soil and plant contents; and on the amount of extracted silicon. The treatments consisted of three doses of N (5, 75, and 150

Nonlinear silicon photonics

Science.gov (United States)

Borghi, M.; Castellan, C.; Signorini, S.; Trenti, A.; Pavesi, L.

2017-09-01

Silicon photonics is a technology based on fabricating integrated optical circuits by using the same paradigms as the dominant electronics industry. After twenty years of fervid development, silicon photonics is entering the market with low cost, high performance and mass-manufacturable optical devices. Until now, most silicon photonic devices have been based on linear optical effects, despite the many phenomenologies associated with nonlinear optics in both bulk materials and integrated waveguides. Silicon and silicon-based materials have strong optical nonlinearities which are enhanced in integrated devices by the small cross-section of the high-index contrast silicon waveguides or photonic crystals. Here the photons are made to strongly interact with the medium where they propagate. This is the central argument of nonlinear silicon photonics. It is the aim of this review to describe the state-of-the-art in the field. Starting from the basic nonlinearities in a silicon waveguide or in optical resonator geometries, many phenomena and applications are described—including frequency generation, frequency conversion, frequency-comb generation, supercontinuum generation, soliton formation, temporal imaging and time lensing, Raman lasing, and comb spectroscopy. Emerging quantum photonics applications, such as entangled photon sources, heralded single-photon sources and integrated quantum photonic circuits are also addressed at the end of this review.

Transformational silicon electronics

KAUST Repository

Rojas, Jhonathan Prieto

2014-02-25

In today\\'s traditional electronics such as in computers or in mobile phones, billions of high-performance, ultra-low-power devices are neatly integrated in extremely compact areas on rigid and brittle but low-cost bulk monocrystalline silicon (100) wafers. Ninety percent of global electronics are made up of silicon. Therefore, we have developed a generic low-cost regenerative batch fabrication process to transform such wafers full of devices into thin (5 μm), mechanically flexible, optically semitransparent silicon fabric with devices, then recycling the remaining wafer to generate multiple silicon fabric with chips and devices, ensuring low-cost and optimal utilization of the whole substrate. We show monocrystalline, amorphous, and polycrystalline silicon and silicon dioxide fabric, all from low-cost bulk silicon (100) wafers with the semiconductor industry\\'s most advanced high-κ/metal gate stack based high-performance, ultra-low-power capacitors, field effect transistors, energy harvesters, and storage to emphasize the effectiveness and versatility of this process to transform traditional electronics into flexible and semitransparent ones for multipurpose applications. © 2014 American Chemical Society.

Silicon Microspheres Photonics

International Nuclear Information System (INIS)

Serpenguzel, A.

2008-01-01

Electrophotonic integrated circuits (EPICs), or alternatively, optoelectronic integrated circuit (OEICs) are the natural evolution of the microelectronic integrated circuit (IC) with the addition of photonic capabilities. Traditionally, the IC industry has been based on group IV silicon, whereas the photonics industry on group III-V semiconductors. However, silicon based photonic microdevices have been making strands in siliconizing photonics. Silicon microspheres with their high quality factor whispering gallery modes (WGMs), are ideal candidates for wavelength division multiplexing (WDM) applications in the standard near-infrared communication bands. In this work, we will discuss the possibility of using silicon microspheres for photonics applications in the near-infrared

Investigation of the heating behavior of carbide-bonded graphene coated silicon wafer used for hot embossing

Science.gov (United States)

Yang, Gao; Li, Lihua; Lee, Wing Bun; Ng, Man Cheung; Chan, Chang Yuen

2018-03-01

A recently developed carbide-bonded graphene (CBG) coated silicon wafer was found to be an effective micro-patterned mold material for implementing rapid heating in hot embossing processes owing to its superior electrical and thermal conductivity, in addition to excellent mechanical properties. To facilitate the achievement of precision temperature control in the hot embossing, the heating behavior of a CBG coated silicon wafer sample was experimentally investigated. First, two groups of controlled experiments were conducted for quantitatively evaluating the influence of the main factors such as the vacuum pressure and gaseous environment (vacuum versus nitrogen) on its heating performance. The electrical and thermal responses of this sample under a voltage of 60 V were then intensively analyzed, and revealed that it had somewhat semi-conducting properties. Further, we compared its thermal profiles under different settings of the input voltage and current limiting threshold. Moreover, the strong temperature dependence of electrical resistance for this material was observed and determined. Ultimately, the surface temperature of CBG coated silicon wafer could be as high as 1300 ℃, but surprisingly the graphene coating did not detach from the substrate under such an elevated temperature due to its strong thermal coupling with the silicon wafer.

Production of technical silicon and silicon carbide from rice-husk

Directory of Open Access Journals (Sweden)

A. Z. Issagulov

2014-10-01

Full Text Available In the article there are studied physical and chemical properties of silicon-carbonic raw material – rice-husk, thermophysical characteristics of the process of rice-husk pyrolysis in nonreactive and oxidizing environment; structure and phase composition of products of the rice-husk pyrolysis in interval of temperatures 150 – 850 °С and high temperature pyrolysis in interval of temperatures 900 – 1 500 °С. There are defined the silicon-carbon production conditions, which meet the requirements applicable to charging materials at production of technical silicon and silicon carbide.

Photovoltaic characteristics of porous silicon /(n+ - p) silicon solar cells

International Nuclear Information System (INIS)

Dzhafarov, T.D.; Aslanov, S.S.; Ragimov, S.H.; Sadigov, M.S.; Nabiyeva, A.F.; Yuksel, Aydin S.

2012-01-01

Full text : The purpose of this work is to improve the photovoltaic parameters of the screen-printed silicon solar cells by formation the nano-porous silicon film on the frontal surface of the cell. The photovoltaic characteristics of two type silicon solar cells with and without porous silicon layer were measured and compared. A remarkable increment of short-circuit current density and the efficiency by 48 percent and 20 percent, respectively, have been achieved for PS/(n + - pSi) solar cell comparing to (n + - p)Si solar cell without PS layer

Study of the thermal effect on silicon surface induced by ion beam from plasma focus device

Energy Technology Data Exchange (ETDEWEB)

Ahmad, Z., E-mail: pscientific5@aec.org.sy [Scientific Service Department, Atomic Energy Commission of Syria, P.O. Box: 6091, Damascus (Syrian Arab Republic); Ahmad, M. [IBA Laboratory, Atomic Energy Commission of Syria, P.O. Box: 6091, Damascus (Syrian Arab Republic); Chemistry Department, Atomic Energy Commission of Syria, P.O. Box: 6091, Damascus (Syrian Arab Republic); Al-Hawat, Sh.; Akel, M. [Physics Department, Atomic Energy Commission of Syria, P.O. Box: 6091, Damascus (Syrian Arab Republic)

2017-04-01

Structural modifications in form of ripples and cracks are induced by nitrogen ions from plasma focus on silicon surface. The investigation of such structures reveals correlation between ripples and cracks formation in peripheral region of the melt spot. The reason of such correlation and structure formation is explained as result of thermal effect. Melting and resolidification of the center of irradiated area occur within one micro second of time. This is supported by a numerical simulation used to investigate the thermal effect induced by the plasma focus ion beams on the silicon surface. This simulation provides information about the temperature profile as well as the dynamic of the thermal propagation in depth and lateral directions. In accordance with the experimental observations, that ripples are formed in latter stage after the arrival of last ion, the simulation shows that the thermal relaxation takes place in few microseconds after the end of the ion beam arrival. Additionally, the dependency of thermal propagation and relaxation on the distance of the silicon surface from the anode is presented.

Laser desorption/ionization from nanostructured surfaces: nanowires, nanoparticle films and silicon microcolumn arrays

International Nuclear Information System (INIS)

Chen Yong; Luo Guanghong; Diao Jiajie; Chornoguz, Olesya; Reeves, Mark; Vertes, Akos

2007-01-01

Due to their optical properties and morphology, thin films formed of nanoparticles are potentially new platforms for soft laser desorption/ionization (SLDI) mass spectrometry. Thin films of gold nanoparticles (with 12±1 nm particle size) were prepared by evaporation-driven vertical colloidal deposition and used to analyze a series of directly deposited polypeptide samples. In this new SLDI method, the required laser fluence for ion detection was equal or less than what was needed for matrix-assisted laser desorption/ionization (MALDI) but the resulting spectra were free of matrix interferences. A silicon microcolumn array-based substrate (a.k.a. black silicon) was developed as a new matrix-free laser desorption ionization surface. When low-resistivity silicon wafers were processed with a 22 ps pulse length 3xω Nd:YAG laser in air, SF 6 or water environment, regularly arranged conical spikes emerged. The radii of the spike tips varied with the processing environment, ranging from approximately 500 nm in water, to ∼2 μm in SF 6 gas and to ∼5 μm in air. Peptide mass spectra directly induced by a nitrogen laser showed the formation of protonated ions of angiotensin I and II, substance P, bradykinin fragment 1-7, synthetic peptide, pro14-arg, and insulin from the processed silicon surfaces but not from the unprocessed areas. Threshold fluences for desorption/ionization were similar to those used in MALDI. Although compared to silicon nanowires the threshold laser pulse energy for ionization is significantly (∼10x) higher, the ease of production and robustness of microcolumn arrays offer complementary benefits

Performance improvement of silicon solar cells by nanoporous silicon coating

Directory of Open Access Journals (Sweden)

Dzhafarov T. D.

2012-04-01

Full Text Available In the present paper the method is shown to improve the photovoltaic parameters of screen-printed silicon solar cells by nanoporous silicon film formation on the frontal surface of the cell using the electrochemical etching. The possible mechanisms responsible for observed improvement of silicon solar cell performance are discussed.

Reprogramming hMSCs morphology with silicon/porous silicon geometric micro-patterns.

Science.gov (United States)

Ynsa, M D; Dang, Z Y; Manso-Silvan, M; Song, J; Azimi, S; Wu, J F; Liang, H D; Torres-Costa, V; Punzon-Quijorna, E; Breese, M B H; Garcia-Ruiz, J P

2014-04-01

Geometric micro-patterned surfaces of silicon combined with porous silicon (Si/PSi) have been manufactured to study the behaviour of human Mesenchymal Stem Cells (hMSCs). These micro-patterns consist of regular silicon hexagons surrounded by spaced columns of silicon equilateral triangles separated by PSi. The results show that, at an early culture stage, the hMSCs resemble quiescent cells on the central hexagons with centered nuclei and actin/β-catenin and a microtubules network denoting cell adhesion. After 2 days, hMSCs adapted their morphology and cytoskeleton proteins from cell-cell dominant interactions at the center of the hexagonal surface. This was followed by an intermediate zone with some external actin fibres/β-catenin interactions and an outer zone where the dominant interactions are cell-silicon. Cells move into silicon columns to divide, migrate and communicate. Furthermore, results show that Runx2 and vitamin D receptors, both specific transcription factors for skeleton-derived cells, are expressed in cells grown on micropatterned silicon under all observed circumstances. On the other hand, non-phenotypic alterations are under cell growth and migration on Si/PSi substrates. The former consideration strongly supports the use of micro-patterned silicon surfaces to address pending questions about the mechanisms of human bone biogenesis/pathogenesis and the study of bone scaffolds.

Study on structural properties of epitaxial silicon films on annealed double layer porous silicon

International Nuclear Information System (INIS)

Yue Zhihao; Shen Honglie; Cai Hong; Lv Hongjie; Liu Bin

2012-01-01

In this paper, epitaxial silicon films were grown on annealed double layer porous silicon by LPCVD. The evolvement of the double layer porous silicon before and after thermal annealing was investigated by scanning electron microscope. X-ray diffraction and Raman spectroscopy were used to investigate the structural properties of the epitaxial silicon thin films grown at different temperature and different pressure. The results show that the surface of the low-porosity layer becomes smooth and there are just few silicon-bridges connecting the porous layer and the substrate wafer. The qualities of the epitaxial silicon thin films become better along with increasing deposition temperature. All of the Raman peaks of silicon films with different deposition pressure are situated at 521 cm -1 under the deposition temperature of 1100 °C, and the Raman intensity of the silicon film deposited at 100 Pa is much closer to that of the monocrystalline silicon wafer. The epitaxial silicon films are all (4 0 0)-oriented and (4 0 0) peak of silicon film deposited at 100 Pa is more symmetric.

Silicon wafer wettability and aging behaviors: Impact on gold thin-film morphology

KAUST Repository

Yang, Xiaoming

2014-10-01

This paper reports on the wettability and aging behaviors of the silicon wafers that had been cleaned using a piranha (3:1 mixture of sulfuric acid (H2SO4, 96%) and hydrogen peroxide (H2O 2, 30%), 120 °C), SC1 (1:1:5 mixture of NH4OH, H 2O2 and H2O, at 80°C) or HF solution (6 parts of 40% NH4F and 1 part of 49% HF, at room temperature) solution, and treated with gaseous plasma. The silicon wafers cleaned using the piranha or SC1 solution were hydrophilic, and the water contact angles on the surfaces would increase along with aging time, until they reached the saturated points of around 70°. The contact angle increase rate of these wafers in a vacuum was much faster than that in the open air, because of loss of water, which was physically adsorbed on the wafer surfaces. The silicon wafers cleaned with the HF solution were hydrophobic. Their contact angle decreased in the atmosphere, while it increased in the vacuum up to 95°. Gold thin films deposited on the hydrophilic wafers were smoother than that deposited on the hydrophobic wafers, because the numerous oxygen groups formed on the hydrophilic surfaces would react with gold adatoms in the sputtering process to form a continuous thin film at the nucleation stage. The argon, nitrogen, oxygen gas plasma treatments could change the silicon wafer surfaces from hydrophobic to hydrophilic by creating a thin (around 2.5 nm) silicon dioxide film, which could be utilized to improve the roughness and adhesion of the gold thin film. © 2014 Elsevier Ltd. All rights reserved.

Silicon wafer wettability and aging behaviors: Impact on gold thin-film morphology

KAUST Repository

Yang, Xiaoming; Zhong, Zhaowei; Diallo, Elhadj; Wang, Zhihong; Yue, Weisheng

2014-01-01

This paper reports on the wettability and aging behaviors of the silicon wafers that had been cleaned using a piranha (3:1 mixture of sulfuric acid (H2SO4, 96%) and hydrogen peroxide (H2O 2, 30%), 120 °C), SC1 (1:1:5 mixture of NH4OH, H 2O2 and H2O, at 80°C) or HF solution (6 parts of 40% NH4F and 1 part of 49% HF, at room temperature) solution, and treated with gaseous plasma. The silicon wafers cleaned using the piranha or SC1 solution were hydrophilic, and the water contact angles on the surfaces would increase along with aging time, until they reached the saturated points of around 70°. The contact angle increase rate of these wafers in a vacuum was much faster than that in the open air, because of loss of water, which was physically adsorbed on the wafer surfaces. The silicon wafers cleaned with the HF solution were hydrophobic. Their contact angle decreased in the atmosphere, while it increased in the vacuum up to 95°. Gold thin films deposited on the hydrophilic wafers were smoother than that deposited on the hydrophobic wafers, because the numerous oxygen groups formed on the hydrophilic surfaces would react with gold adatoms in the sputtering process to form a continuous thin film at the nucleation stage. The argon, nitrogen, oxygen gas plasma treatments could change the silicon wafer surfaces from hydrophobic to hydrophilic by creating a thin (around 2.5 nm) silicon dioxide film, which could be utilized to improve the roughness and adhesion of the gold thin film. © 2014 Elsevier Ltd. All rights reserved.

21 CFR 862.1515 - Nitrogen (amino-nitrogen) test system.

Science.gov (United States)

2010-04-01

... 21 Food and Drugs 8 2010-04-01 2010-04-01 false Nitrogen (amino-nitrogen) test system. 862.1515... Systems § 862.1515 Nitrogen (amino-nitrogen) test system. (a) Identification. A nitrogen (amino-nitrogen) test system is a device intended to measure amino acid nitrogen levels in serum, plasma, and urine...

Release of low molecular weight silicones and platinum from silicone breast implants.

Science.gov (United States)

Lykissa, E D; Kala, S V; Hurley, J B; Lebovitz, R M

1997-12-01

We have conducted a series of studies addressing the chemical composition of silicone gels from breast implants as well as the diffusion of low molecular weight silicones (LM-silicones) and heavy metals from intact implants into various surrounding media, namely, lipid-rich medium (soy oil), aqueous tissue culture medium (modified Dulbecco's medium, DMEM), or an emulsion consisting of DMEM plus 10% soy oil. LM-silicones in both implants and surrounding media were detected and quantitated using gas chromatography (GC) coupled with atomic emission (GC-AED) as well as mass spectrometric (GC/MS) detectors, which can detect silicones in the nanogram range. Platinum, a catalyst used in the preparation of silicone gels, was detected and quantitated using inductive argon-coupled plasma/mass spectrometry (ICP-MS), which can detect platinum in the parts per trillion range. Our results indicate that GC-detectable low molecular weight silicones contribute approximately 1-2% to the total gel mass and consist predominantly of cyclic and linear poly-(dimethylsiloxanes) ranging from 3 to 20 siloxane [(CH3)2-Si-O] units (molecular weight 200-1500). Platinum can be detected in implant gels at levels of approximately 700 micrograms/kg by ICP-MS. The major component of implant gels appears to be high molecular weight silicone polymers (HM-silicones) too large to be detected by GC. However, these HM-silicones can be converted almost quantitatively (80% by mass) to LM-silicones by heating implant gels at 150-180 degrees C for several hours. We also studied the rates at which LM-silicones and platinum leak through the intact implant outer shell into the surrounding media under a variety of conditions. Leakage of silicones was greatest when the surrounding medium was lipid-rich, and up to 10 mg/day LM-silicones was observed to diffuse into a lipid-rich medium per 250 g of implant at 37 degrees C. This rate of leakage was maintained over a 7-day experimental period. Similarly, platinum was

Uptake of fertilizer nitrogen and soil nitrogen by rice using 15N-labelled nitrogen fertilizer

International Nuclear Information System (INIS)

Reddy, K.R.; Patrick, W.H. Jr.

1980-01-01

Data from five field experiments using labelled nitrogen fertilizer were used to determine the relative effects of soil nitrogen and fertilizer nitrogen on rice yield. Yield of grain was closely correlated with total aboveground nitrogen uptake (soil + fertilizer), less closely correlated with soil nitrogen uptake and not significantly correlated with fertilizer nitrogen uptake. When yield increase rather than yield was correlated with fertilizer nitrogen uptake, the correlation coefficient was statistically significant. (orig.)

Effect of nitrogen on the electrochemical performance of core–shell structured Si/C nanocomposites as anode materials for Li-ion batteries

International Nuclear Information System (INIS)

Tao, Hua-Chao; Huang, Mian; Fan, Li-Zhen; Qu, Xuanhui

2013-01-01

Highlights: ► N-containing core–shell structured Si/C nanocomposites are prepared via two steps. ► The N-containing Si/C nanocomposites exhibit high capacity and excellent cycling stability. ► The appropriate nitrogen has a beneficial effect on the electrochemical performance. -- Abstract: Core–shell structured Si/C nanocomposites with different nitrogen contents are prepared by in situ polymerization of aniline in the suspension of silicon nanoparticles followed by carbonization of Si/polyaniline (PANI) nanocomposites at different temperatures. The nitrogen contents of Si/C nanocomposites decrease gradually with increasing carbonization temperatures. The effect of nitrogen contents on the electrochemical performance of Si/C nanocomposites as anode materials for lithium ion batteries is investigated. It is found that the Si/C nanocomposites with 4.75 wt.% nitrogen exhibit the high specific capacity of 795 mAh g −1 after 50 cycles at a current density of 100 mA g −1 and excellent cycling stability. The appropriate nitrogen in Si/C nanocomposites plays a beneficial role in the improvement of electrochemical performance. The nitrogen in Si/C nanocomposites increases the reversible capacity, which may be due to the formation of vacancies and dangling bonds around the nitrogen sites

Effect of Silicon application on Morpho-physiological Characteristics, Grain Yield and Nutrient Content of Bread Wheat under Water Stress Conditions

Directory of Open Access Journals (Sweden)

A. Karmollachaab

2015-03-01

Full Text Available In order to investigate the effect of silicon application on some physiological characteristics, yield and yield components, and grain mineral contents of bread wheat (Triticum aestivum under water stress condition, an experiment was conducted in Ramin Agriculture and Natural Resources University, Khuzestan, in 2012. The experiment was arranged in split-plots design in RCBD (Completely Randomized Blocks Design with three replications. Treatments consisted of drought stress (irrigation after 25, 50 and 75% depletion of Available Water Content in main plots and silicon (0, 10, 20 and 30 Kg Si ha-1 arranged in sub-plots. Results showed that the effect of drought stress was significant on most traits and led to the increase of electrolyte leakage (EL, cuticular wax, leaf and grain silicon content and grain nitrogen content. But drought led to negative impacts on grain yield and its components, and leaf potassium content, i.e. moderate and severe stresses reduced yield by 17% and 38% compared to control, respectively. Effect of silicon application was significant on all traits except for spike per square meter. Silicon had the greatest impact on EL and led to 35% decrease in this trait. Also, silicon led to increase in leaf and grain silicon contents and grain K content and grain yield and yield components, when applied at 30 kg ha-1. Generally, application of 30 kg ha-1 of silicon led to 6 and 14% increases of grain yield at the presence of moderate and severe drought stresses, respectively. Thus, given the abundance of silicon it can be used as an ameliorating element for planting bread wheat in drought-prone conditions.

Deposition of silicon oxynitride films by low energy ion beam assisted nitridation at room temperature

Energy Technology Data Exchange (ETDEWEB)

Youroukov, S; Kitova, S; Danev, G [Central Laboratory of Photoprocesses, Bulgarian Academy of Sciences, Acad. G. Bonchev Str., Bl. 109, 113 Sofia (Bulgaria)], E-mail: skitova@clf.bas.bg

2008-05-01

The possibility is studied of growing thin silicon oxynitride films by e-gun evaporation of SiO and SiO{sub 2} together with concurrent bombardment with low energy N{sub 2}{sup +} ions from a cyclotron resonance (ECR) source at room temperature of substrates. The degree of nitridation and oxidation of the films is investigated by means of X-ray spectroscopy. The optical characteristics of the films, their environmental stability and adhesion to different substrates are examined. The results obtained show than the films deposited are transparent. It is found that in the case of SiO evaporation with concurrent N{sub 2}{sup +} ion bombardment, reactive implantation of nitrogen within the films takes place at room temperature of the substrate with the formation of a new silicon oxynitride compound even at low ion energy (150-200 eV)

Light emitting structures porous silicon-silicon substrate

International Nuclear Information System (INIS)

Monastyrskii, L.S.; Olenych, I.B.; Panasjuk, M.R.; Savchyn, V.P.

1999-01-01

The research of spectroscopic properties of porous silicon has been done. Complex of photoluminescence, electroluminescence, cathodoluminescence, thermostimulated depolarisation current analyte methods have been applied to study of geterostructures and free layers of porous silicon. Light emitting processes had tendency to decrease. The character of decay for all kinds of luminescence were different

Synthesis, crystal structure and DFT studies of a Zinc(II) complex of 1,3-diaminopropane (Dap), [Zn(Dap)(NCS)2][Zn(Dap)(NCS)2]n. The additional stabilizing role of S⋯π chalcogen bond

Science.gov (United States)

Alotaibi, Mshari A.; Alharthi, Abdulrahman I.; Zierkiewicz, Wiktor; Akhtar, Muhammad; Tahir, Muhammad Nawaz; Mazhar, Muhammad; Isab, Anvarhusein A.; Ahmad, Saeed

2017-04-01

A zinc(II) complex of 1,3-diaminopropane (Dap), [Zn(Dap)(NCS)2][Zn(Dap)(NCS)2]n (1) has been prepared and characterized by elemental analysis, IR, 1H &13C NMR spectroscopy, and its crystal structure was determined by X-ray crystallography. The crystal structure of 1 consists of two types of molecules, a discrete monomer and a polymeric one. In the monomeric unit, the zinc atom is bound to one terminal Dap molecule and to two N-bound thiocyanate ions, while in the polymeric unit, Dap acts as a bridging ligand forming a linear chain. The Zn(II) ions in both assume a slightly distorted tetrahedral geometry. The structures of two systems: the [Zn(Dap)(NCS)2][Zn(Dap)(NCS)2]3 complex as a model of 1 and [Zn(Dap)(NCS)2]4 as a simple polymeric structure were optimized with the B3LYP-D3 method. The DFT results support that the experimentally determined structure (1) is more stable in comparison to a simple polymeric structure, [Zn(Dap)(NCS)2]n (2). The interaction energies (ΔE) for NCS anions obtained by B3LYP-D3 method are about -145 kcal mol-1, while the calculated ΔE values for neutral organic ligands are about twice smaller. The X-ray structure of 1 shows that the complex is stabilized mainly by hydrogen bonds. We also found that weak chalcogen bonds play an additional role in stabilization of compound 1. Some of the intermolecular S⋯N distances are smaller than the sum of the van der Waals radii of the corresponding atoms. To the best of our knowledge, this is the first study that shows the structure where the trivalent sulfur is involved in formation of a S⋯π chalcogen bond. The NBO and NCI analyses confirm the existence of this kind of interactions.

Gelcasting of SiC/Si for preparation of silicon nitride bonded silicon carbide

International Nuclear Information System (INIS)

Xie, Z.P.; Tsinghua University, Beijing,; Cheng, Y.B.; Lu, J.W.; Huang, Y.

2000-01-01

In the present paper, gelcasting of aqueous slurry with coarse silicon carbide(1mm) and fine silicon particles was investigated to fabricate silicon nitride bonded silicon carbide materials. Through the examination of influence of different polyelectrolytes on the Zeta potential and viscosity of silicon and silicon carbide suspensions, a stable SiC/Si suspension with 60 vol% solid loading could be prepared by using polyelectrolyte of D3005 and sodium alginate. Gelation of this suspension can complete in 10-30 min at 60-80 deg C after cast into mold. After demolded, the wet green body can be dried directly in furnace and the green strength will develop during drying. Complex shape parts with near net size were prepared by the process. Effects of the debindering process on nitridation and density of silicon nitride bonded silicon carbide were also examined. Copyright (2000) The Australian Ceramic Society

Silicon detectors

International Nuclear Information System (INIS)

Klanner, R.

1984-08-01

The status and recent progress of silicon detectors for high energy physics is reviewed. Emphasis is put on detectors with high spatial resolution and the use of silicon detectors in calorimeters. (orig.)

FTIR studies of swift silicon and oxygen ion irradiated porous silicon

International Nuclear Information System (INIS)

Bhave, Tejashree M.; Hullavarad, S.S.; Bhoraskar, S.V.; Hegde, S.G.; Kanjilal, D.

1999-01-01

Fourier Transform Infrared Spectroscopy has been used to study the bond restructuring in silicon and oxygen irradiated porous silicon. Boron doped p-type (1 1 1) porous silicon was irradiated with 10 MeV silicon and a 14 MeV oxygen ions at different doses ranging between 10 12 and 10 14 ions cm -2 . The yield of PL in porous silicon irradiated samples was observed to increase considerably while in oxygen irradiated samples it was seen to improve only by a small extent for lower doses whereas it decreased for higher doses. The results were interpreted in view of the relative intensities of the absorption peaks associated with O-Si-H and Si-H stretch bonds

Suppression of carbon desorption from 4H-SiC by irradiating a remote nitrogen plasma at a low temperature

Science.gov (United States)

Shimabayashi, Masaharu; Kurihara, Kazuaki; Sasaki, Koichi

2018-05-01

We remotely irradiated a nitrogen plasma onto the carbon-side surface of 4H-SiC at a low temperature, and examined the effect of sample cooling on the characteristics of the nitride layer. An improved nitride layer, which had higher concentrations of carbon and silicon and a lower concentration of oxygen, was formed in the region at depths of more than 0.6–0.9 nm from the top surface. The depth of the fragile nitride layer in the top region, where no improved characteristics of the nitride layer were observed, became smaller with sample cooling. In addition, on the basis of the experimental results, we discussed the difference in the activation energy of the nitriding reaction of 4H-SiC supported by atomic nitrogen and molecular nitrogen in the metastable \\text{A}3Σ \\text{u} + state.

Annealing temperature dependence of photoluminescent characteristics of silicon nanocrystals embedded in silicon-rich silicon nitride films grown by PECVD

International Nuclear Information System (INIS)

Chao, D.S.; Liang, J.H.

2013-01-01

Recently, light emission from silicon nanostructures has gained great interest due to its promising potential of realizing silicon-based optoelectronic applications. In this study, luminescent silicon nanocrystals (Si–NCs) were in situ synthesized in silicon-rich silicon nitride (SRSN) films grown by plasma-enhanced chemical vapor deposition (PECVD). SRSN films with various excess silicon contents were deposited by adjusting SiH 4 flow rate to 100 and 200 sccm and keeping NH 3 one at 40 sccm, and followed by furnace annealing (FA) treatments at 600, 850 and 1100 °C for 1 h. The effects of excess silicon content and post-annealing temperature on optical properties of Si–NCs were investigated by photoluminescence (PL) and Fourier transform infrared spectroscopy (FTIR). The origins of two groups of PL peaks found in this study can be attributed to defect-related interface states and quantum confinement effects (QCE). Defect-related interface states lead to the photon energy levels almost kept constant at about 3.4 eV, while QCE results in visible and tunable PL emission in the spectral range of yellow and blue light which depends on excess silicon content and post-annealing temperature. In addition, PL intensity was also demonstrated to be highly correlative to the excess silicon content and post-annealing temperature due to its corresponding effects on size, density, crystallinity, and surface passivation of Si–NCs. Considering the trade-off between surface passivation and structural properties of Si–NCs, an optimal post-annealing temperature of 600 °C was suggested to maximize the PL intensity of the SRSN films

Molecular nitrogen fixation and nitrogen cycle in nature

Energy Technology Data Exchange (ETDEWEB)

Virtanen, A I

1952-01-01

The origin of nitrogen oxides in the atmosphere is discussed. Evidently only a small proportion of the nitrate-and nitrite-nitrogen found in the precipitation is formed through electric discharges from molecular nitrogen, photochemical nitrogen fixation being probably of greater importance. Formation of nitrate nitrogen through atmospheric oxidation of nitrous oxide (N/sub 2/O) evaporating from the soil is also considered likely. Determination of nitrogen compounds at different altitudes is indispensable for gaining information of the N/sub 2/-fixation in the atmosphere and, in general, of the origin of nitrogen oxides and their decomposition. International cooperation is needed for this as well as for the quantitative determination of the nitrogen compounds removed from the soil by leaching and brought by waters into the seas.

Strategies for doped nanocrystalline silicon integration in silicon heterojunction solar cells

Czech Academy of Sciences Publication Activity Database

Seif, J.; Descoeudres, A.; Nogay, G.; Hänni, S.; de Nicolas, S.M.; Holm, N.; Geissbühler, J.; Hessler-Wyser, A.; Duchamp, M.; Dunin-Borkowski, R.E.; Ledinský, Martin; De Wolf, S.; Ballif, C.

2016-01-01

Roč. 6, č. 5 (2016), s. 1132-1140 ISSN 2156-3381 R&D Projects: GA MŠk LM2015087 Institutional support: RVO:68378271 Keywords : microcrystalline silicon * nanocrystalline silicon * silicon heterojunctions (SHJs) * solar cells Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.712, year: 2016

Periodically poled silicon

Science.gov (United States)

Hon, Nick K.; Tsia, Kevin K.; Solli, Daniel R.; Khurgin, Jacob B.; Jalali, Bahram

2010-02-01

Bulk centrosymmetric silicon lacks second-order optical nonlinearity χ(2) - a foundational component of nonlinear optics. Here, we propose a new class of photonic device which enables χ(2) as well as quasi-phase matching based on periodic stress fields in silicon - periodically-poled silicon (PePSi). This concept adds the periodic poling capability to silicon photonics, and allows the excellent crystal quality and advanced manufacturing capabilities of silicon to be harnessed for devices based on χ(2)) effects. The concept can also be simply achieved by having periodic arrangement of stressed thin films along a silicon waveguide. As an example of the utility, we present simulations showing that mid-wave infrared radiation can be efficiently generated through difference frequency generation from near-infrared with a conversion efficiency of 50% based on χ(2) values measurements for strained silicon reported in the literature [Jacobson et al. Nature 441, 199 (2006)]. The use of PePSi for frequency conversion can also be extended to terahertz generation. With integrated piezoelectric material, dynamically control of χ(2)nonlinearity in PePSi waveguide may also be achieved. The successful realization of PePSi based devices depends on the strength of the stress induced χ(2) in silicon. Presently, there exists a significant discrepancy in the literature between the theoretical and experimentally measured values. We present a simple theoretical model that produces result consistent with prior theoretical works and use this model to identify possible reasons for this discrepancy.

Efficiency Enhancement of Silicon Solar Cells by Porous Silicon Technology

Directory of Open Access Journals (Sweden)

Eugenijus SHATKOVSKIS

2012-09-01

Full Text Available Silicon solar cells produced by a usual technology in p-type, crystalline silicon wafer were investigated. The manufactured solar cells were of total thickness 450 mm, the junction depth was of 0.5 mm – 0.7 mm. Porous silicon technologies were adapted to enhance cell efficiency. The production of porous silicon layer was carried out in HF: ethanol = 1 : 2 volume ratio electrolytes, illuminating by 50 W halogen lamps at the time of processing. The etching current was computer-controlled in the limits of (6 ÷ 14 mA/cm2, etching time was set in the interval of (10 ÷ 20 s. The characteristics and performance of the solar cells samples was carried out illuminating by Xenon 5000 K lamp light. Current-voltage characteristic studies have shown that porous silicon structures produced affect the extent of dark and lighting parameters of the samples. Exactly it affects current-voltage characteristic and serial resistance of the cells. It has shown, the formation of porous silicon structure causes an increase in the electric power created of solar cell. Conversion efficiency increases also respectively to the initial efficiency of cell. Increase of solar cell maximum power in 15 or even more percent is found. The highest increase in power have been observed in the spectral range of Dl @ (450 ÷ 850 nm, where ~ 60 % of the A1.5 spectra solar energy is located. It has been demonstrated that porous silicon technology is effective tool to improve the silicon solar cells performance.DOI: http://dx.doi.org/10.5755/j01.ms.18.3.2428

Chiral silicon nanostructures

International Nuclear Information System (INIS)

Schubert, E.; Fahlteich, J.; Hoeche, Th.; Wagner, G.; Rauschenbach, B.

2006-01-01

Glancing angle ion beam assisted deposition is used for the growth of amorphous silicon nanospirals onto [0 0 1] silicon substrates in a temperature range from room temperature to 475 deg. C. The nanostructures are post-growth annealed in an argon atmosphere at various temperatures ranging from 400 deg. C to 800 deg. C. Recrystallization of silicon within the persisting nanospiral configuration is demonstrated for annealing temperatures above 800 deg. C. Transmission electron microscopy and Raman spectroscopy are used to characterize the silicon samples prior and after temperature treatment

Plasma-Assisted Co-evaporation of S and Se for Wide Band Gap Chalcopyrite Photovoltaics: Final Subcontract Report, December 2001 -- April 2005

Energy Technology Data Exchange (ETDEWEB)

Repins, I.; Wolden, C.

2005-08-01

In this work, ITN Energy Systems (ITN) and lower-tier subcontractor Colorado School of Mines (CSM) explore the replacement of the molecular chalcogen precursors during deposition (e.g., Se2 or H2Se) with more reactive chalcogen monomers or radicals (e.g., Se). Molecular species are converted to atomic species in a low-pressure inductively coupled plasma (ICP). This program explored the use of plasma-activated chalcogen sources in CIGS co-evaporation to lower CIGS deposition temperature, increase utilization, increase deposition rate, and improve S:Se stoichiometry control. Plasma activation sources were designed and built, then operated and characterized over a wide range of conditions. Optical emission and mass spectrometry data show that chalcogens are effectively dissociated in the plasma. The enhanced reactivity achieved by the plasma processing was demonstrated by conversion of pre-deposited metal films to respective chalcogen-containing phases at low temperature and low chalcogen flux. The plasma-assisted co-evaporation (PACE) sources were also implemented in CIGS co-evaporation. No benefit from PACE was observed in device results, and frequent deposition failures occurred.

The chemistry of silicon

CERN Document Server

Rochow, E G; Emeléus, H J; Nyholm, Ronald

1975-01-01

Pergamon Texts in Organic Chemistry, Volume 9: The Chemistry of Silicon presents information essential in understanding the chemical properties of silicon. The book first covers the fundamental aspects of silicon, such as its nuclear, physical, and chemical properties. The text also details the history of silicon, its occurrence and distribution, and applications. Next, the selection enumerates the compounds and complexes of silicon, along with organosilicon compounds. The text will be of great interest to chemists and chemical engineers. Other researchers working on research study involving s

The origin of traps and the effect of nitrogen plasma in oxide-nitride-oxide structures for non-volatile memories

International Nuclear Information System (INIS)

Kim, W. S.; Kwak, D. W.; Oh, J. S.; Lee, D. W.; Cho, H. Y.

2010-01-01

Ultrathin oxide-nitride-oxide (ONO) dielectric stacked layers are fundamental structures of silicon-oxide-nitride-oxide-silicon (SONOS) non-volatile memory devices in which information is known to be stored as charges trapped in silicon nitride. Deep-level transient spectroscopy (DLTS) and a capacitance-voltage (CV) analysis were introduced to observe the trap behavior related to the memory effect in memory devices. The DLTS results verified that the nitride-related traps were a dominant factor in the memory effect. The energy of hole traps was 0.307 eV above the balance band. To improve the memory effects of the non-volatile memory devices with ONO structures, we introduced a nitrogen plasma treatment. After the N-plasma treatment, the flat-band voltage shift (ΔV FB ) was increased by about 1.5 times. The program and the erase (P-E) characteristics were also shown to be better than those for the as-ONO structure. In addition, the retention characteristics were improved by over 2.4 times.

Study on the graphene/silicon Schottky diodes by transferring graphene transparent electrodes on silicon

International Nuclear Information System (INIS)

Wang, Xiaojuan; Li, Dong; Zhang, Qichong; Zou, Liping; Wang, Fengli; Zhou, Jun; Zhang, Zengxing

2015-01-01

Graphene/silicon heterostructures present a Schottky characteristic and have potential applications for solar cells and photodetectors. Here, we fabricated graphene/silicon heterostructures by using chemical vapor deposition derived graphene and n-type silicon, and studied the electronic and optoelectronic properties through varying their interface and silicon resistivity. The results exhibit that the properties of the fabricated configurations can be effectively modulated. The graphene/silicon heterostructures with a Si (111) interface and high resistivity show a better photovoltaic behavior and should be applied for high-performance photodetectors. With the combined atomic force microscopy and theoretical analysis, the possible origination is discussed. The work here should be helpful on exploring high-performance graphene/silicon photoelectronics. - Highlights: • Different graphene/silicon heterostructures were fabricated. • Electronic and optoelectronic properties of the heterostructures were studied. • Graphene/silicon heterostructures were further explored for photodetectors.

Study on the graphene/silicon Schottky diodes by transferring graphene transparent electrodes on silicon

Energy Technology Data Exchange (ETDEWEB)

Wang, Xiaojuan [MOE Key Laboratory of Advanced Micro-structured Materials & Shanghai Key Laboratory of Special Artificial Microstructure Materials and Technology, School of Physics Science and Engineering, Tongji University, Shanghai 200092 (China); School of Physics and Electronics, Henan University, Kaifeng 475004 (China); Li, Dong; Zhang, Qichong; Zou, Liping; Wang, Fengli [MOE Key Laboratory of Advanced Micro-structured Materials & Shanghai Key Laboratory of Special Artificial Microstructure Materials and Technology, School of Physics Science and Engineering, Tongji University, Shanghai 200092 (China); Zhou, Jun, E-mail: zhoujunzhou@tongji.edu.cn [Center for Phononics and Thermal Energy Science, School of Physics Science and Engineering, Tongji University, Shanghai 200092 (China); Zhang, Zengxing, E-mail: zhangzx@tongji.edu.cn [MOE Key Laboratory of Advanced Micro-structured Materials & Shanghai Key Laboratory of Special Artificial Microstructure Materials and Technology, School of Physics Science and Engineering, Tongji University, Shanghai 200092 (China)

2015-10-01

Graphene/silicon heterostructures present a Schottky characteristic and have potential applications for solar cells and photodetectors. Here, we fabricated graphene/silicon heterostructures by using chemical vapor deposition derived graphene and n-type silicon, and studied the electronic and optoelectronic properties through varying their interface and silicon resistivity. The results exhibit that the properties of the fabricated configurations can be effectively modulated. The graphene/silicon heterostructures with a Si (111) interface and high resistivity show a better photovoltaic behavior and should be applied for high-performance photodetectors. With the combined atomic force microscopy and theoretical analysis, the possible origination is discussed. The work here should be helpful on exploring high-performance graphene/silicon photoelectronics. - Highlights: • Different graphene/silicon heterostructures were fabricated. • Electronic and optoelectronic properties of the heterostructures were studied. • Graphene/silicon heterostructures were further explored for photodetectors.

Extreme drought decouples silicon and carbon geochemical linkages in lakes.

Science.gov (United States)

Li, Tianyang; Li, Siyue; Bush, Richard T; Liang, Chuan

2018-09-01

Silicon and carbon geochemical linkages were usually regulated by chemical weathering and organism activity, but had not been investigated under the drought condition, and the magnitude and extent of drought effects remain poorly understood. We collected a comprehensive data set from a total of 13 sampling sites covering the main water body of the largest freshwater lake system in Australia, the Lower Lakes. Changes to water quality during drought (April 2008-September 2010) and post-drought (October 2010-October 2013) were compared to reveal the effects of drought on dissolved silica (DSi) and bicarbonate (HCO 3 - ) and other environmental factors, including sodium (Na + ), pH, electrical conductivity (EC), chlorophyll a (Chl-a), total dissolved solids (TDS), dissolved inorganic nitrogen (DIN), total nitrogen (TN), total phosphorus (TP) and water levels. Among the key observations, concentrations of DSi and DIN were markedly lower in drought than in post-drought period while pH, EC and concentrations of HCO 3 - , Na + , Chl-a, TDS, TN, TP and the ratio TN:TP had inverse trends. Stoichiometric ratios of DSi:HCO 3 - , DSi:Na + and HCO 3 - :Na + were significantly lower in the drought period. DSi exhibited significantly negative relationships with HCO 3 - , and DSi:Na + was strongly correlated with HCO 3 - :Na + in both drought and post-drought periods. The backward stepwise regression analysis that could avoid multicollinearity suggested that DSi:HCO 3 - ratio in drought period had significant relationships with fewer variables when compared to the post-drought, and was better predictable using nutrient variables during post-drought. Our results highlight the drought effects on variations of water constituents and point to the decoupling of silicon and carbon geochemical linkages in the Lower Lakes under drought conditions. Copyright © 2018 Elsevier B.V. All rights reserved.

Nitrogen

Science.gov (United States)

Apodaca, Lori E.

2013-01-01

The article presents an overview of the nitrogen chemical market as of July 2013, including the production of ammonia compounds. Industrial uses for ammonia include fertilizers, explosives, and plastics. Other topics include industrial capacity of U.S. ammonia producers CF Industries Holdings Inc., Koch Nitrogen Co., PCS Nitrogen, Inc., and Agrium Inc., the impact of natural gas prices on the nitrogen industry, and demand for corn crops for ethanol production.

Effect of the stoichiometry of Si-rich silicon nitride thin films on their photoluminescence and structural properties

Energy Technology Data Exchange (ETDEWEB)

Torchynska, T.V., E-mail: ttorch@esfm.ipn.mx [ESFM—Instituto Politecnico Nacional, Mexico DF 07738 (Mexico); Casas Espinola, J.L. [ESFM—Instituto Politecnico Nacional, Mexico DF 07738 (Mexico); Vergara Hernandez, E. [UPIITA—Instituto Politecnico Nacional, Mexico DF 07320 (Mexico); Khomenkova, L., E-mail: khomen@ukr.net [V. Lashkaryov Institute of Semiconductor Physics, 45 Pr. Nauky, 03028 Kyiv (Ukraine); Delachat, F.; Slaoui, A. [ICube, 23 rue du Loess, BP 20 CR, 67037 Strasbourg Cedex 2 (France)

2015-04-30

Si-rich Silicon nitride films were grown on silicon substrates by plasma enhanced chemical vapor deposition. The film stoichiometry was controlled via the variation of NH{sub 3}/SiH{sub 4} ratio from 0.45 up to 1.0. Thermal annealing at 1100 °C for 30 min in the nitrogen flow was applied to form the Si nanocrystals in the films that have been investigated by means of photoluminescence and Raman scattering methods, as well as transmission electron microscopy. Several emission bands have been detected with the peak positions at: 2.8–3.0 eV, 2.5–2.7 eV, 2.10–2.25 eV, and 1.75–1.98 eV. The temperature dependences of photoluminescence spectra were studied with the aim to confirm the types of optical transitions and the nature of light emitting defects in silicon nitride. The former three bands were assigned to the defects in silicon nitride, whereas the last one (1.75–1.98 eV) was attributed to the exciton recombination inside of Si nanocrystals. The photoluminescence mechanism is discussed. - Highlights: • Substoichiometric silicon nitride films were grown by PECVD technique. • The variation of the NH{sub 3}/SiH{sub 4} ratio controls excess Si content in the films. • Both Si nanocrystals and amorphous Si phase were observed in annealed films. • Temperature evolution of carrier recombination via Si nanocrystals and host defects.

Irradiation effects of swift heavy ions on gallium arsenide, silicon and silicon diodes

International Nuclear Information System (INIS)

Bhoraskar, V.N.

2001-01-01

The irradiation effects of high energy lithium, boron, oxygen and silicon ions on crystalline silicon, gallium arsenide, porous silicon and silicon diodes were investigated. The ion energy and fluence were varied over the ranges 30 to 100 MeV and 10 11 to 10 14 ions/cm 2 respectively. Semiconductor samples were characterized with the x-ray fluorescence, photoluminescence, thermally stimulated exo-electron emission and optical reflectivity techniques. The life-time of minority carriers in crystalline silicon was measured with a pulsed electron beam and the lithium depth distribution in GaAs was measured with the neutron depth profiling technique. The diodes were characterized through electrical measurements. The results of optical reflectivity, life-time of minority carriers and photoluminescence show that swift heavy ions induce defects in the surface region of crystalline silicon. In the ion-irradiated GaAs, migration of silicon, oxygen and lithium atoms from the buried region towards the surface was observed, with orders of magnitude enhancement in the diffusion coefficients. Enhancement in the photoluminescence intensity was observed in the GaAs and porous silicon samples that, were irradiated with silicon ions. The trade-off between the turn-off time and the voltage, drop in diodes irradiated with different swift heavy ions was also studied. (author)

Analytical and experimental evaluation of joining silicon carbide to silicon carbide and silicon nitride to silicon nitride for advanced heat engine applications Phase 2. Final report

Energy Technology Data Exchange (ETDEWEB)

Sundberg, G.J.; Vartabedian, A.M.; Wade, J.A.; White, C.S. [Norton Co., Northboro, MA (United States). Advanced Ceramics Div.

1994-10-01

The purpose of joining, Phase 2 was to develop joining technologies for HIP`ed Si{sub 3}N{sub 4} with 4wt% Y{sub 2}O{sub 3} (NCX-5101) and for a siliconized SiC (NT230) for various geometries including: butt joins, curved joins and shaft to disk joins. In addition, more extensive mechanical characterization of silicon nitride joins to enhance the predictive capabilities of the analytical/numerical models for structural components in advanced heat engines was provided. Mechanical evaluation were performed by: flexure strength at 22 C and 1,370 C, stress rupture at 1,370 C, high temperature creep, 22 C tensile testing and spin tests. While the silicon nitride joins were produced with sufficient integrity for many applications, the lower join strength would limit its use in the more severe structural applications. Thus, the silicon carbide join quality was deemed unsatisfactory to advance to more complex, curved geometries. The silicon carbide joining methods covered within this contract, although not entirely successful, have emphasized the need to focus future efforts upon ways to obtain a homogeneous, well sintered parent/join interface prior to siliconization. In conclusion, the improved definition of the silicon carbide joining problem obtained by efforts during this contract have provided avenues for future work that could successfully obtain heat engine quality joins.

Hydrogen in amorphous silicon

International Nuclear Information System (INIS)

Peercy, P.S.

1980-01-01

The structural aspects of amorphous silicon and the role of hydrogen in this structure are reviewed with emphasis on ion implantation studies. In amorphous silicon produced by Si ion implantation of crystalline silicon, the material reconstructs into a metastable amorphous structure which has optical and electrical properties qualitatively similar to the corresponding properties in high-purity evaporated amorphous silicon. Hydrogen studies further indicate that these structures will accomodate less than or equal to 5 at.% hydrogen and this hydrogen is bonded predominantly in a monohydride (SiH 1 ) site. Larger hydrogen concentrations than this can be achieved under certain conditions, but the excess hydrogen may be attributed to defects and voids in the material. Similarly, glow discharge or sputter deposited amorphous silicon has more desirable electrical and optical properties when the material is prepared with low hydrogen concentration and monohydride bonding. Results of structural studies and hydrogen incorporation in amorphous silicon were discussed relative to the different models proposed for amorphous silicon

A convenient way of manufacturing silicon nanotubes on a silicon substrate

Energy Technology Data Exchange (ETDEWEB)

Zhang, Changchang; Cheng, Heming; Liu, Xiang, E-mail: liuxiang@ahut.edu.cn

2016-07-01

A convenient approach of preparing silicon nanotubes (SiNTs) on a silicon substrate is described in this work in detail. Firstly, a porous silicon (PSi) slice is prepared by a galvanic displacement reaction. Then it is put into aqueous solutions of 20% (w%) ammonium fluoride and 2.5 mM cobalt nitrate for a predetermined time. The cobalt ions are reduced and the resulted cobalt particles are deposited on the PSi slice. After the cobalt particles are removed with 5 M nitric acid a plenty of SiNTs come out and exhibit disorderly on the silicon substrate, which are illustrated by scanning electron microscopy (SEM). The compositions of the SiNTs are examined by energy-dispersive X-ray spectroscopy. Based on the SEM images, a suggested mechanism is put forward to explain the generation of the SiNTs on the PSi substrate. - Highlights: • A facile approach of preparing silicon nano tubes was invented. • The experimental results demonstrated the strong reducibility of Si-H{sub x} species. • It provided a new way of manufacturing silicon-contained hybrids.

Sorption Properties of Aerogel in Liquid Nitrogen

Science.gov (United States)

Johnson, Wesley L.

2006-01-01

Aerogel products are now available as insulation materials of the future. The Cryogenics Test Laboratory at the NASA Kennedy Space Center is developing aerogel-based thermal insulation systems for space launch applications. Aerogel beads (Cabot Nanogel ) and aerogel blankets (Aspen Aerogels Spaceloft ) have outstanding ambient pressure thermal performance that makes them useful for applications where sealing is not possible. Aerogel beads are open-celled silicone dioxide and have tiny pores that run throughout the body of the bead. It has also recently been discovered that aerogel beads can be used as a filtering device for aqueous compounds at room temperature. With their hydrophobic covering, the beads absorb any non-polar substance and they can be chemically altered to absorb hot gases. The combination of the absorption and cryogenic insulating properties of aerogel beads have never been studied together. For future cryogenic insulation applications, it is crucial to know how the beads react while immersed in cryogenic liquids, most notably liquid nitrogen. Aerogel beads in loose-fill situation and aerogel blankets with composite fiber structure have been tested for absorption properties. Depending on the type of aerogel used and the preparation, preliminary results show the material can absorb up to seven times its own weight of liquid nitrogen, corresponding to a volumetric ratio of 0.70 (unit volume nitrogen per unit volume aerogel). These tests allow for an estimate on how much insulation is needed in certain situations. The theory behind the different processes of sorption is necessary for a better understanding of the preparation of the beads before they are used in an insulation system.

Development of Radiation Hard Radiation Detectors, Differences between Czochralski Silicon and Float Zone Silicon

CERN Document Server

Tuominen, Eija

2012-01-01

The purpose of this work was to develop radiation hard silicon detectors. Radiation detectors made ofsilicon are cost effective and have excellent position resolution. Therefore, they are widely used fortrack finding and particle analysis in large high-energy physics experiments. Silicon detectors willalso be used in the CMS (Compact Muon Solenoid) experiment that is being built at the LHC (LargeHadron Collider) accelerator at CERN (European Organisation for Nuclear Research). This work wasdone in the CMS programme of Helsinki Institute of Physics (HIP).Exposure of the silicon material to particle radiation causes irreversible defects that deteriorate theperformance of the silicon detectors. In HIP CMS Programme, our approach was to improve theradiation hardness of the silicon material with increased oxygen concentration in silicon material. Westudied two different methods: diffusion oxygenation of Float Zone silicon and use of high resistivityCzochralski silicon.We processed, characterised, tested in a parti...

Nitrogen doping efficiency during vapor phase epitaxy of 4H-SiC

Energy Technology Data Exchange (ETDEWEB)

Rowland, L.B.; Brandt, C.D. [Northrop Grumman Science and Technology Center, Pittsburgh, PA (United States); Burk, A.A. Jr. [Northrop Grumman Advanced Technology Lab., Baltimore, MD (United States)

1998-06-01

This work examines the interrelationships among doping efficiency, mole fraction, and Si/C ratio for intentional doping of 4H-SiC during vapor phase epitaxy using N{sub 2}. For four Si/C ratios, the doping concentration increased linearly as a function of increasing N{sub 2} partial pressure with a slope of 1.0 {+-} 0.03. Variation of propane mole fraction while the SiH{sub 4} and N{sub 2} mole fractions were kept constant revealed two different modes of nitrogen incorporation, corresponding to carbon-rich and silicon-rich conditions. (orig.) 14 refs.

Methods To Determine the Silicone Oil Layer Thickness in Sprayed-On Siliconized Syringes.

Science.gov (United States)

Loosli, Viviane; Germershaus, Oliver; Steinberg, Henrik; Dreher, Sascha; Grauschopf, Ulla; Funke, Stefanie

2018-01-01

The silicone lubricant layer in prefilled syringes has been investigated with regards to siliconization process performance, prefilled syringe functionality, and drug product attributes, such as subvisible particle levels, in several studies in the past. However, adequate methods to characterize the silicone oil layer thickness and distribution are limited, and systematic evaluation is missing. In this study, white light interferometry was evaluated to close this gap in method understanding. White light interferometry demonstrated a good accuracy of 93-99% for MgF 2 coated, curved standards covering a thickness range of 115-473 nm. Thickness measurements for sprayed-on siliconized prefilled syringes with different representative silicone oil distribution patterns (homogeneous, pronounced siliconization at flange or needle side, respectively) showed high instrument (0.5%) and analyst precision (4.1%). Different white light interferometry instrument parameters (autofocus, protective shield, syringe barrel dimensions input, type of non-siliconized syringe used as base reference) had no significant impact on the measured average layer thickness. The obtained values from white light interferometry applying a fully developed method (12 radial lines, 50 mm measurement distance, 50 measurements points) were in agreement with orthogonal results from combined white and laser interferometry and 3D-laser scanning microscopy. The investigated syringe batches (lot A and B) exhibited comparable longitudinal silicone oil layer thicknesses ranging from 170-190 nm to 90-100 nm from flange to tip and homogeneously distributed silicone layers over the syringe barrel circumference (110- 135 nm). Empty break-loose (4-4.5 N) and gliding forces (2-2.5 N) were comparably low for both analyzed syringe lots. A silicone oil layer thickness of 100-200 nm was thus sufficient for adequate functionality in this particular study. Filling the syringe with a surrogate solution including short

CHARACTERIZATION OF THE ELECTROPHYSICAL PROPERTIES OF SILICON-SILICON DIOXIDE INTERFACE USING PROBE ELECTROMETRY METHODS

Directory of Open Access Journals (Sweden)

V. А. Pilipenko

2017-01-01

Full Text Available Introduction of submicron design standards into microelectronic industry and a decrease of the gate dielectric thickness raise the importance of the analysis of microinhomogeneities in the silicon-silicon dioxide system. However, there is very little to no information on practical implementation of probe electrometry methods, and particularly scanning Kelvin probe method, in the interoperational control of real semiconductor manufacturing process. The purpose of the study was the development of methods for nondestructive testing of semiconductor wafers based on the determination of electrophysical properties of the silicon-silicon dioxide interface and their spatial distribution over wafer’s surface using non-contact probe electrometry methods.Traditional C-V curve analysis and scanning Kelvin probe method were used to characterize silicon- silicon dioxide interface. The samples under testing were silicon wafers of KEF 4.5 and KDB 12 type (orientation <100>, diameter 100 mm.Probe electrometry results revealed uniform spatial distribution of wafer’s surface potential after its preliminary rapid thermal treatment. Silicon-silicon dioxide electric potential values were also higher after treatment than before it. This potential growth correlates with the drop in interface charge density. At the same time local changes in surface potential indicate changes in surface layer structure.Probe electrometry results qualitatively reflect changes of interface charge density in silicon-silicon dioxide structure during its technological treatment. Inhomogeneities of surface potential distribution reflect inhomogeneity of damaged layer thickness and can be used as a means for localization of interface treatment defects.

Silicon microphotonic waveguides

International Nuclear Information System (INIS)

Ta'eed, V.; Steel, M.J.; Grillet, C.; Eggleton, B.; Du, J.; Glasscock, J.; Savvides, N.

2004-01-01

Full text: Silicon microphotonic devices have been drawing increasing attention in the past few years. The high index-difference between silicon and its oxide (Δn = 2) suggests a potential for high-density integration of optical functions on to a photonic chip. Additionally, it has been shown that silicon exhibits strong Raman nonlinearity, a necessary property as light interaction can occur only by means of nonlinearities in the propagation medium. The small dimensions of silicon waveguides require the design of efficient tapers to couple light to them. We have used the beam propagation method (RSoft BeamPROP) to understand the principles and design of an inverse-taper mode-converter as implemented in several recent papers. We report on progress in the design and fabrication of silicon-based waveguides. Preliminary work has been conducted by patterning silicon-on-insulator (SOI) wafers using optical lithography and reactive ion etching. Thus far, only rib waveguides have been designed, as single-mode ridge-waveguides are beyond the capabilities of conventional optical lithography. We have recently moved to electron beam lithography as the higher resolutions permitted will provide the flexibility to begin fabricating sub-micron waveguides

Mechanical and tribological properties of silicon nitride films synthesized by ion beam enhanced deposition

International Nuclear Information System (INIS)

Chen Yuanru; Li Shizhuo; Zhang Xushou; Liu Hong; Yang Genqing; Qu Baochun

1991-01-01

This article describes preliminary investigations of mechanical and tribological properties of silicon nitride film formed by ion beam enhanced deposition (IBED) on GH37 (Ni-based alloys) steel. The films were synthesized by silicon vapor deposition with a rate of 1 A/s and by 40 keV nitrogen ion bombardment simultaneously. The thickness of the film was about 5000 A. X-ray photoelectron spectroscopy and infrared absorption spectroscopy revealed that a stoichiometric Si 3 N 4 film was formed. The observation of TEM showed that the IBED Si 3 N 4 film normally had an amorphous structure. However, electron diffraction patterns revealed a certain crystallinity. The mechanical and tribological properties of the films were investigated with a scratch tester, microhardness meter, and a ball-on-disc tribometer respectively. Results show that the adhesive strength between film and substrate is about 51 N, the Vickers microhardness with a load of 0.2 N is 980, the friction coefficient measured for steel against silicon nitride film ranges from 0.1 to 0.15, and the wear rate of coatings is about 6.8x10 -5 mm 3 /(mN). Finally, the relationship among thermal annealing, crystallinity and tribological characteristics of the Si 3 N 4 film is discussed. (orig.)

Ceramic silicon-boron-carbon fibers from organic silicon-boron-polymers

Science.gov (United States)

Riccitiello, Salvatore R. (Inventor); Hsu, Ming-Ta S. (Inventor); Chen, Timothy S. (Inventor)

1993-01-01

Novel high strength ceramic fibers derived from boron, silicon, and carbon organic precursor polymers are discussed. The ceramic fibers are thermally stable up to and beyond 1200 C in air. The method of preparation of the boron-silicon-carbon fibers from a low oxygen content organosilicon boron precursor polymer of the general formula Si(R2)BR(sup 1) includes melt-spinning, crosslinking, and pyrolysis. Specifically, the crosslinked (or cured) precursor organic polymer fibers do not melt or deform during pyrolysis to form the silicon-boron-carbon ceramic fiber. These novel silicon-boron-carbon ceramic fibers are useful in high temperature applications because they retain tensile and other properties up to 1200 C, from 1200 to 1300 C, and in some cases higher than 1300 C.

Catastrophic degradation of the interface of epitaxial silicon carbide on silicon at high temperatures

Energy Technology Data Exchange (ETDEWEB)

Pradeepkumar, Aiswarya; Mishra, Neeraj; Kermany, Atieh Ranjbar; Iacopi, Francesca [Queensland Micro and Nanotechnology Centre and Environmental Futures Research Institute, Griffith University, Nathan QLD 4111 (Australia); Boeckl, John J. [Materials and Manufacturing Directorate, Air Force Research Laboratories, Wright-Patterson Air Force Base, Ohio 45433 (United States); Hellerstedt, Jack; Fuhrer, Michael S. [Monash Centre for Atomically Thin Materials, Monash University, Monash, VIC 3800 (Australia)

2016-07-04

Epitaxial cubic silicon carbide on silicon is of high potential technological relevance for the integration of a wide range of applications and materials with silicon technologies, such as micro electro mechanical systems, wide-bandgap electronics, and graphene. The hetero-epitaxial system engenders mechanical stresses at least up to a GPa, pressures making it extremely challenging to maintain the integrity of the silicon carbide/silicon interface. In this work, we investigate the stability of said interface and we find that high temperature annealing leads to a loss of integrity. High–resolution transmission electron microscopy analysis shows a morphologically degraded SiC/Si interface, while mechanical stress measurements indicate considerable relaxation of the interfacial stress. From an electrical point of view, the diode behaviour of the initial p-Si/n-SiC junction is catastrophically lost due to considerable inter-diffusion of atoms and charges across the interface upon annealing. Temperature dependent transport measurements confirm a severe electrical shorting of the epitaxial silicon carbide to the underlying substrate, indicating vast predominance of the silicon carriers in lateral transport above 25 K. This finding has crucial consequences on the integration of epitaxial silicon carbide on silicon and its potential applications.

Memory characteristics of silicon nitride with silicon nanocrystals as a charge trapping layer of nonvolatile memory devices

International Nuclear Information System (INIS)

Choi, Sangmoo; Yang, Hyundeok; Chang, Man; Baek, Sungkweon; Hwang, Hyunsang; Jeon, Sanghun; Kim, Juhyung; Kim, Chungwoo

2005-01-01

Silicon nitride with silicon nanocrystals formed by low-energy silicon plasma immersion ion implantation has been investigated as a charge trapping layer of a polycrystalline silicon-oxide-nitride-oxide-silicon-type nonvolatile memory device. Compared with the control sample without silicon nanocrystals, silicon nitride with silicon nanocrystals provides excellent memory characteristics, such as larger width of capacitance-voltage hysteresis, higher program/erase speed, and lower charge loss rate at elevated temperature. These improved memory characteristics are derived by incorporation of silicon nanocrystals into the charge trapping layer as additional accessible charge traps with a deeper effective trap energy level

Use of hydroxypropylmethylcellulose 2% for removing adherent silicone oil from silicone intraocular lenses

OpenAIRE

Wong , S Chien; Ramkissoon , Yashin D; Lopez , Mauricio; Page , Kristopher; Parkin , Ivan P; Sullivan , Paul M

2009-01-01

Abstract Background / aims: To investigate the effect of hydroxypropylmethylcellulose (HPMC) on the physical interaction (contact angle) between silicone oil and a silicone intraocular lens (IOL). Methods: In vitro experiments were performed, to determine the effect of HPMC (0.5%, 1% or 2%), with or without an additional simple mechanical manoeuvre, on the contact angle of silicone oil at the surface of both silicone and acrylic (control) IOLs. A balanced salt solu...

Single-Event Effects in Silicon and Silicon Carbide Power Devices

Science.gov (United States)

Lauenstein, Jean-Marie; Casey, Megan C.; LaBel, Kenneth A.; Topper, Alyson D.; Wilcox, Edward P.; Kim, Hak; Phan, Anthony M.

2014-01-01

NASA Electronics Parts and Packaging program-funded activities over the past year on single-event effects in silicon and silicon carbide power devices are presented, with focus on SiC device failure signatures.

Extension of Mediema's Macroscopic Atom Model to the Elements of Group 16 (O, S, Se, Te ,Po)

Energy Technology Data Exchange (ETDEWEB)

Neuhausen, J.; Eichler, B

2003-09-01

A consistent set of Miedema-parameters has been developed for the elements of the chalcogen group (Group 16 of the periodic table of the elements: 0, S, Se, Te, Po) from ab-initio quantum-mechanical calculations as weIl as empirical correlations. Using this parameter set thermochemical properties such as enthalpies of formation of solid metal chalcogenides, partial molar enthalpies of solution of chalcogens in liquid and solid metaIs, partial molar enthalpies of evaporation of the chalcogens from liquid metal solution into the monoatomic gaseous state, partial molar enthalpies of adsorption of chalcogenides on metal surfaces at zero coverage and partial molar enthalpies of segregation of the chalcogens in trace amounts within solid metal matrices have been calculated. These properties are compared with available experimental data and discussed with an emphasis on the periodic behaviour of the elements. The model calculations show that a description of the thermochemical properties of the chalcogens using the semi-empirical Miedema approach is possible. The calculated properties can serve as a basis for the prediction of the chemical interactions for metal-chalcogen combinations that have not been studied experimentally so far. (author)

Extension of Mediema's Macroscopic Atom Model to the Elements of Group 16 (O, S, Se, Te ,Po)

International Nuclear Information System (INIS)

Neuhausen, J.; Eichler, B.

2003-09-01

A consistent set of Miedema-parameters has been developed for the elements of the chalcogen group (Group 16 of the periodic table of the elements: 0, S, Se, Te, Po) from ab-initio quantum-mechanical calculations as weIl as empirical correlations. Using this parameter set thermochemical properties such as enthalpies of formation of solid metal chalcogenides, partial molar enthalpies of solution of chalcogens in liquid and solid metaIs, partial molar enthalpies of evaporation of the chalcogens from liquid metal solution into the monoatomic gaseous state, partial molar enthalpies of adsorption of chalcogenides on metal surfaces at zero coverage and partial molar enthalpies of segregation of the chalcogens in trace amounts within solid metal matrices have been calculated. These properties are compared with available experimental data and discussed with an emphasis on the periodic behaviour of the elements. The model calculations show that a description of the thermochemical properties of the chalcogens using the semi-empirical Miedema approach is possible. The calculated properties can serve as a basis for the prediction of the chemical interactions for metal-chalcogen combinations that have not been studied experimentally so far. (author)

Porous Silicon Nanowires

Science.gov (United States)

Qu, Yongquan; Zhou, Hailong; Duan, Xiangfeng

2011-01-01

In this minreview, we summarize recent progress in the synthesis, properties and applications of a new type of one-dimensional nanostructures — single crystalline porous silicon nanowires. The growth of porous silicon nanowires starting from both p- and n-type Si wafers with a variety of dopant concentrations can be achieved through either one-step or two-step reactions. The mechanistic studies indicate the dopant concentration of Si wafers, oxidizer concentration, etching time and temperature can affect the morphology of the as-etched silicon nanowires. The porous silicon nanowires are both optically and electronically active and have been explored for potential applications in diverse areas including photocatalysis, lithium ion battery, gas sensor and drug delivery. PMID:21869999

Formation of multiple levels of porous silicon for buried insulators and conductors in silicon device technologies

Science.gov (United States)

Blewer, Robert S.; Gullinger, Terry R.; Kelly, Michael J.; Tsao, Sylvia S.

1991-01-01

A method of forming a multiple level porous silicon substrate for semiconductor integrated circuits including anodizing non-porous silicon layers of a multi-layer silicon substrate to form multiple levels of porous silicon. At least one porous silicon layer is then oxidized to form an insulating layer and at least one other layer of porous silicon beneath the insulating layer is metallized to form a buried conductive layer. Preferably the insulating layer and conductive layer are separated by an anodization barrier formed of non-porous silicon. By etching through the anodization barrier and subsequently forming a metallized conductive layer, a fully or partially insulated buried conductor may be fabricated under single crystal silicon.

Silicon: electrochemistry and luminescence

NARCIS (Netherlands)

Kooij, Ernst Stefan

1997-01-01

The electrochemistry of crystalline and porous silicon and the luminescence from porous silicon has been studied. One chapter deals with a model for the anodic dissolution of silicon in HF solution. In following chapters both the electrochemistry and various ways of generating visible

Polycrystalline Silicon Gettered by Porous Silicon and Heavy Phosphorous Diffusion

Institute of Scientific and Technical Information of China (English)

LIU Zuming(刘祖明); Souleymane K Traore; ZHANG Zhongwen(张忠文); LUO Yi(罗毅)

2004-01-01

The biggest barrier for photovoltaic (PV) utilization is its high cost, so the key for scale PV utilization is to further decrease the cost of solar cells. One way to improve the efficiency, and therefore lower the cost, is to increase the minority carrier lifetime by controlling the material defects. The main defects in grain boundaries of polycrystalline silicon gettered by porous silicon and heavy phosphorous diffusion have been studied. The porous silicon was formed on the two surfaces of wafers by chemical etching. Phosphorous was then diffused into the wafers at high temperature (900℃). After the porous silicon and diffusion layers were removed, the minority carrier lifetime was measured by photo-conductor decay. The results show that the lifetime's minority carriers are increased greatly after such treatment.

Anisotropic elasticity of silicon and its application to the modelling of X-ray optics

International Nuclear Information System (INIS)

Zhang, Lin; Barrett, Raymond; Cloetens, Peter; Detlefs, Carsten; Sanchez del Rio, Manuel

2014-01-01

Anisotropic elasticity of single-crystal silicon, applications to modelling of a bent X-ray mirror, and thermal deformation of a liquid-nitrogen-cooled monochromator crystal are presented. The crystal lattice of single-crystal silicon gives rise to anisotropic elasticity. The stiffness and compliance coefficient matrix depend on crystal orientation and, consequently, Young’s modulus, the shear modulus and Poisson’s ratio as well. Computer codes (in Matlab and Python) have been developed to calculate these anisotropic elasticity parameters for a silicon crystal in any orientation. These codes facilitate the evaluation of these anisotropy effects in silicon for applications such as microelectronics, microelectromechanical systems and X-ray optics. For mechanically bent X-ray optics, it is shown that the silicon crystal orientation is an important factor which may significantly influence the optics design and manufacturing phase. Choosing the appropriate crystal orientation can both lead to improved performance whilst lowering mechanical bending stresses. The thermal deformation of the crystal depends on Poisson’s ratio. For an isotropic constant Poisson’s ratio, ν, the thermal deformation (RMS slope) is proportional to (1 + ν). For a cubic anisotropic material, the thermal deformation of the X-ray optics can be approximately simulated by using the average of ν 12 and ν 13 as an effective isotropic Poisson’s ratio, where the direction 1 is normal to the optic surface, and the directions 2 and 3 are two normal orthogonal directions parallel to the optical surface. This average is independent of the direction in the optical surface (the crystal plane) for Si(100), Si(110) and Si(111). Using the effective isotropic Poisson’s ratio for these orientations leads to an error in thermal deformation smaller than 5.5%

Anisotropic elasticity of silicon and its application to the modelling of X-ray optics

Energy Technology Data Exchange (ETDEWEB)

Zhang, Lin, E-mail: zhang@esrf.fr; Barrett, Raymond; Cloetens, Peter; Detlefs, Carsten; Sanchez del Rio, Manuel [European Synchrotron Radiation Facility, 6 Rue Jules Horowitz, BP 220, 38043 Grenoble (France)

2014-04-04

Anisotropic elasticity of single-crystal silicon, applications to modelling of a bent X-ray mirror, and thermal deformation of a liquid-nitrogen-cooled monochromator crystal are presented. The crystal lattice of single-crystal silicon gives rise to anisotropic elasticity. The stiffness and compliance coefficient matrix depend on crystal orientation and, consequently, Young’s modulus, the shear modulus and Poisson’s ratio as well. Computer codes (in Matlab and Python) have been developed to calculate these anisotropic elasticity parameters for a silicon crystal in any orientation. These codes facilitate the evaluation of these anisotropy effects in silicon for applications such as microelectronics, microelectromechanical systems and X-ray optics. For mechanically bent X-ray optics, it is shown that the silicon crystal orientation is an important factor which may significantly influence the optics design and manufacturing phase. Choosing the appropriate crystal orientation can both lead to improved performance whilst lowering mechanical bending stresses. The thermal deformation of the crystal depends on Poisson’s ratio. For an isotropic constant Poisson’s ratio, ν, the thermal deformation (RMS slope) is proportional to (1 + ν). For a cubic anisotropic material, the thermal deformation of the X-ray optics can be approximately simulated by using the average of ν{sub 12} and ν{sub 13} as an effective isotropic Poisson’s ratio, where the direction 1 is normal to the optic surface, and the directions 2 and 3 are two normal orthogonal directions parallel to the optical surface. This average is independent of the direction in the optical surface (the crystal plane) for Si(100), Si(110) and Si(111). Using the effective isotropic Poisson’s ratio for these orientations leads to an error in thermal deformation smaller than 5.5%.

White light emission from engineered silicon carbide

DEFF Research Database (Denmark)

Ou, Haiyan

Silicon carbide (SiC) is a wide indirect bandgap semiconductor. The light emission efficiency is low in nature. But this material has very unique physical properties like good thermal conductivity, high break down field etc in addition to its abundance. Therefore it is interesting to engineer its...... light emission property so that to take fully potential applications of this material. In this talk, two methods, i.e. doping SiC heavily by donor-acceptor pairs and making SiC porous are introduced to make light emission from SiC. By co-doping SiC with nitrogen and boron heavily, strong yellow emission...... is demonstrated. After optimizing the passivation conditions, strong blue-green emission from porous SiC is demonstrated as well. When combining the yellow emission from co-doped SiC and blue-green from porous SiC, a high color rendering index white light source is achieved....

Thermoelectric characteristics of Pt-silicide/silicon multi-layer structured p-type silicon

International Nuclear Information System (INIS)

Choi, Wonchul; Jun, Dongseok; Kim, Soojung; Shin, Mincheol; Jang, Moongyu

2015-01-01

Electric and thermoelectric properties of silicide/silicon multi-layer structured devices were investigated with the variation of silicide/silicon heterojunction numbers from 3 to 12 layers. For the fabrication of silicide/silicon multi-layered structure, platinum and silicon layers are repeatedly sputtered on the (100) silicon bulk substrate and rapid thermal annealing is carried out for the silicidation. The manufactured devices show ohmic current–voltage (I–V) characteristics. The Seebeck coefficient of bulk Si is evaluated as 195.8 ± 15.3 μV/K at 300 K, whereas the 12 layered silicide/silicon multi-layer structured device is evaluated as 201.8 ± 9.1 μV/K. As the temperature increases to 400 K, the Seebeck coefficient increases to 237.2 ± 4.7 μV/K and 277.0 ± 1.1 μV/K for bulk and 12 layered devices, respectively. The increase of Seebeck coefficient in multi-layered structure is mainly attributed to the electron filtering effect due to the Schottky barrier at Pt-silicide/silicon interface. At 400 K, the thermal conductivity is reduced by about half of magnitude compared to bulk in multi-layered device which shows the efficient suppression of phonon propagation by using Pt-silicide/silicon hetero-junctions. - Highlights: • Silicide/silicon multi-layer structured is proposed for thermoelectric devices. • Electric and thermoelectric properties with the number of layer are investigated. • An increase of Seebeck coefficient is mainly attributed the Schottky barrier. • Phonon propagation is suppressed with the existence of Schottky barrier. • Thermal conductivity is reduced due to the suppression of phonon propagation

Colloidal Photoluminescent Amorphous Porous Silicon, Methods Of Making Colloidal Photoluminescent Amorphous Porous Silicon, And Methods Of Using Colloidal Photoluminescent Amorphous Porous Silicon

KAUST Repository

Chaieb, Sahraoui

2015-04-09

Embodiments of the present disclosure provide for a colloidal photoluminescent amorphous porous silicon particle suspension, methods of making a colloidal photoluminescent amorphous porous silicon particle suspension, methods of using a colloidal photoluminescent amorphous porous silicon particle suspension, and the like.

Colloidal Photoluminescent Amorphous Porous Silicon, Methods Of Making Colloidal Photoluminescent Amorphous Porous Silicon, And Methods Of Using Colloidal Photoluminescent Amorphous Porous Silicon

KAUST Repository

Chaieb, Saharoui; Mughal, Asad Jahangir

2015-01-01

Embodiments of the present disclosure provide for a colloidal photoluminescent amorphous porous silicon particle suspension, methods of making a colloidal photoluminescent amorphous porous silicon particle suspension, methods of using a colloidal photoluminescent amorphous porous silicon particle suspension, and the like.

The effect of silicon crystallographic orientation on the formation of silicon nanoclusters during anodic electrochemical etching

International Nuclear Information System (INIS)

Timokhov, D. F.; Timokhov, F. P.

2009-01-01

Possible ways for increasing the photoluminescence quantum yield of porous silicon layers have been investigated. The effect of the anodization parameters on the photoluminescence properties for porous silicon layers formed on silicon substrates with different crystallographic orientations was studied. The average diameters for silicon nanoclusters are calculated from the photoluminescence spectra of porous silicon. The influence of the substrate crystallographic orientation on the photoluminescence quantum yield of porous silicon is revealed. A model explaining the effect of the substrate orientation on the photoluminescence properties for the porous silicon layers formed by anode electrochemical etching is proposed.

Forest fuel reduces the nitrogen load - calculations of nitrogen flows

International Nuclear Information System (INIS)

Burstroem, F.; Johansson, Jan.

1995-12-01

Nitrogen deposition in Sweden has increased strongly during recent decades, particularly in southern Sweden. Nitrogen appears to be largely accumulated in biomass and in the soil. It is therefore desirable to check the accumulation of nitrogen in the forest. The most suitable way of doing this is to remove more nitrogen-rich biomass from the forest, i.e., increase the removal of felling residues from final fellings and cleanings. An ecological condition for intensive removal of fuel is that the ashes are returned. The critical load for nitrogen, CL(N), indicates the level of nitrogen deposition that the forest can withstand without leading to ecological changes. Today, nitrogen deposition is higher than the CL(N) in almost all of Sweden. CL(N) is calculated in such a manner that nitrogen deposition should largely be balanced by nitrogen losses through harvesting during a forest rotation. The value of CL(N) thus largely depends on how much nitrogen is removed with the harvested biomass. When both stems and felling residues are harvested, the CL(N) is about three times higher than in conventional forestry. The increase is directly related to the amount of nitrogen in the removed biofuel. Use of biofuel also causes a certain amount of nitrogen emissions. From the environmental viewpoint there is no difference between the sources of the nitrogen compounds. An analysis of the entire fuel chain shows that, compared with the amount of nitrogen removed from the forest with the fuel, about 5 % will be emitted as nitrogen oxides or ammonia during combustion, and a further ca 5 % during handling and transports. A net amount of about 90 % of biomass nitrogen is removed from the system and becomes inert nitrogen (N 2 ). 60 refs, 3 figs, 4 tabs, 11 appendices

Three dimensional analysis of nanoporous silicon particles for Li-ion batteries

Energy Technology Data Exchange (ETDEWEB)

Roiban, Lucian, E-mail: lucian.roiban@insa-lyon.fr [Université de Lyon, Insa-Lyon, MATEIS, UMR5510 CNRS, 7 Avenue Jean Capelle, 69621, Villeurbanne cedex (France); Koneti, Siddardha [Université de Lyon, Insa-Lyon, MATEIS, UMR5510 CNRS, 7 Avenue Jean Capelle, 69621, Villeurbanne cedex (France); Wada, Takeshi, E-mail: wada-t@imr.tohoku.ac.jp [Institute for Materials Research, Tohoku University, Sendai, Miyagi 980-8577 (Japan); Kato, Hidemi [Institute for Materials Research, Tohoku University, Sendai, Miyagi 980-8577 (Japan); Cadete Santos Aires, Francisco J. [Université de Lyon, Université Lyon1, IRCELYON, UMR5256 CNRS, 2 Avenue Albert Einstein, 69626 Villeurbanne Cedex (France); Laboratory of Catalytic Research, National Research Tomsk State University, 36 Lenin Avenue, 634050 Tomsk (Russian Federation); Curelea, Sergiu; Epicier, Thierry; Maire, Eric [Université de Lyon, Insa-Lyon, MATEIS, UMR5510 CNRS, 7 Avenue Jean Capelle, 69621, Villeurbanne cedex (France)

2017-02-15

Bulk nanoporous silicon prepared by top-down method form Li-ion batteries was investigated combining different conventional technique such as nitrogen physisorption and high resolution electron microscopy with electron tomography. It was found that the Si nanorods are forming porous aggregates with a half of the volume of the particle occupied by pores. The nanorods are preferentially oriented along the main axis of the aggregate. The porosity and the lack of compaction between the aggregates provide space for the Si expansion during the lithiation process. It was found that the Si nanorods mainly expose the (111) family plane as an external faces. The size distributions of the porous and solid phases in a granule were found to be similar. The pores represent 50% of the total volume of an aggregate. The shape orientation of the particles was quantified and it was found to exhibit a narrow distribution. - Highlights: •Bulk nanoporous silicon for Li-ion batteries is studied by HRTEM and electron tomography. •The crystalline facets of Si nanorods are formed by (111) plains. •The lack of compactness between Si nanorods provides 50% of porous volume. •The Si nanorods are oriented along a preferential axis.

Joining elements of silicon carbide

International Nuclear Information System (INIS)

Olson, B.A.

1979-01-01

A method of joining together at least two silicon carbide elements (e.g.in forming a heat exchanger) is described, comprising subjecting to sufficiently non-oxidizing atmosphere and sufficiently high temperature, material placed in space between the elements. The material consists of silicon carbide particles, carbon and/or a precursor of carbon, and silicon, such that it forms a joint joining together at least two silicon carbide elements. At least one of the elements may contain silicon. (author)

Graphitized silicon carbide microbeams: wafer-level, self-aligned graphene on silicon wafers

International Nuclear Information System (INIS)

Cunning, Benjamin V; Ahmed, Mohsin; Mishra, Neeraj; Kermany, Atieh Ranjbar; Iacopi, Francesca; Wood, Barry

2014-01-01

Currently proven methods that are used to obtain devices with high-quality graphene on silicon wafers involve the transfer of graphene flakes from a growth substrate, resulting in fundamental limitations for large-scale device fabrication. Moreover, the complex three-dimensional structures of interest for microelectromechanical and nanoelectromechanical systems are hardly compatible with such transfer processes. Here, we introduce a methodology for obtaining thousands of microbeams, made of graphitized silicon carbide on silicon, through a site-selective and wafer-scale approach. A Ni-Cu alloy catalyst mediates a self-aligned graphitization on prepatterned SiC microstructures at a temperature that is compatible with silicon technologies. The graphene nanocoating leads to a dramatically enhanced electrical conductivity, which elevates this approach to an ideal method for the replacement of conductive metal films in silicon carbide-based MEMS and NEMS devices. (paper)

Effect of low-energy hydrogen ion implantation on dendritic web silicon solar cells

Science.gov (United States)

Rohatgi, A.; Meier, D. L.; Rai-Choudhury, P.; Fonash, S. J.; Singh, R.

1986-01-01

The effect of a low-energy (0.4 keV), short-time (2-min), heavy-dose (10 to the 18th/sq cm) hydrogen ion implant on dendritic web silicon solar cells and material was investigated. Such an implant was observed to improve the cell open-circuit voltage and short-circuit current appreciably for a number of cells. In spite of the low implant energy, measurements of internal quantum efficiency indicate that it is the base of the cell, rather than the emitter, which benefits from the hydrogen implant. This is supported by the observation that the measured minority-carrier diffusion length in the base did not change when the emitter was removed. In some cases, a threefold increase of the base diffusion length was observed after implantation. The effects of the hydrogen implantation were not changed by a thermal stress test at 250 C for 111 h in nitrogen. It is speculated that hydrogen enters the bulk by traveling along dislocations, as proposed recently for edge-defined film-fed growth silicon ribbon.

Use of porous silicon to minimize oxidation induced stacking fault defects in silicon

International Nuclear Information System (INIS)

Shieh, S.Y.; Evans, J.W.

1992-01-01

This paper presents methods for minimizing stacking fault defects, generated during oxidation of silicon, include damaging the back of the wafer or depositing poly-silicon on the back. In either case a highly defective structure is created and this is capable of gettering either self-interstitials or impurities which promote nucleation of stacking fault defects. A novel method of minimizing these defects is to form a patch of porous silicon on the back of the wafer by electrochemical etching. Annealing under inert gas prior to oxidation may then result in the necessary gettering. Experiments were carried out in which wafers were subjected to this treatment. Subsequent to oxidation, the wafers were etched to remove oxide and reveal defects. The regions of the wafer adjacent to the porous silicon patch were defect-free, whereas remote regions had defects. Deep level transient spectroscopy has been used to examine the gettering capability of porous silicon, and the paper discusses the mechanism by which the porous silicon getters

Extension of Mediema's Macroscopic Atom Model to the Elements of Group 16 (O, S, Se, Te ,Po)

CERN Document Server

Neuhausen, J

2003-01-01

A consistent set of Miedema-parameters has been developed for the elements of the chalcogen group (Group 16 of the periodic table of the elements: 0, S, Se, Te, Po) from ab-initio quantum-mechanical calculations as weIl as empirical correlations. Using this parameter set thermochemical properties such as enthalpies of formation of solid metal chalcogenides, partial molar enthalpies of solution of chalcogens in liquid and solid metaIs, partial molar enthalpies of evaporation of the chalcogens from liquid metal solution into the monoatomic gaseous state, partial molar enthalpies of adsorption of chalcogenides on metal surfaces at zero coverage and partial molar enthalpies of segregation of the chalcogens in trace amounts within solid metal matrices have been calculated. These properties are compared with available experimental data and discussed with an emphasis on the periodic behaviour of the elements. The model calculations show that a description of the thermochemical properties of the chalcogens using the ...

Indentation fatigue in silicon nitride, alumina and silicon carbide ...

Indian Academy of Sciences (India)

Repeated indentation fatigue (RIF) experiments conducted on the same spot of different structural ceramics viz. a hot pressed silicon nitride (HPSN), sintered alumina of two different grain sizes viz. 1 m and 25 m, and a sintered silicon carbide (SSiC) are reported. The RIF experiments were conducted using a Vicker's ...

Silicon web process development

Science.gov (United States)

Duncan, C. S.; Seidensticker, R. G.; Mchugh, J. P.; Skutch, M. E.; Driggers, J. M.; Hopkins, R. H.

1981-01-01

The silicon web process takes advantage of natural crystallographic stabilizing forces to grow long, thin single crystal ribbons directly from liquid silicon. The ribbon, or web, is formed by the solidification of a liquid film supported by surface tension between two silicon filaments, called dendrites, which border the edges of the growing strip. The ribbon can be propagated indefinitely by replenishing the liquid silicon as it is transformed to crystal. The dendritic web process has several advantages for achieving low cost, high efficiency solar cells. These advantages are discussed.

Processing and characterization of diatom nanoparticles and microparticles as potential source of silicon for bone tissue engineering

Energy Technology Data Exchange (ETDEWEB)

Le, Thi Duy Hanh [Department of Industrial Engineering, University of Trento, Trento (Italy); BIOtech Research Center and European Institute of Excellence on Tissue Engineering and Regenerative Medicine, Trento (Italy); Bonani, Walter [Department of Industrial Engineering, University of Trento, Trento (Italy); BIOtech Research Center and European Institute of Excellence on Tissue Engineering and Regenerative Medicine, Trento (Italy); Interuniversity Consortium for Science and Technology of Materials, Trento Research Unit, Trento (Italy); Speranza, Giorgio [Center for Materials and Microsystems, PAM-SE, Fondazione Bruno Kessler, Trento (Italy); Sglavo, Vincenzo; Ceccato, Riccardo [Department of Industrial Engineering, University of Trento, Trento (Italy); Maniglio, Devid; Motta, Antonella [Department of Industrial Engineering, University of Trento, Trento (Italy); BIOtech Research Center and European Institute of Excellence on Tissue Engineering and Regenerative Medicine, Trento (Italy); Interuniversity Consortium for Science and Technology of Materials, Trento Research Unit, Trento (Italy); Migliaresi, Claudio, E-mail: claudio.migliaresi@unitn.it [Department of Industrial Engineering, University of Trento, Trento (Italy); BIOtech Research Center and European Institute of Excellence on Tissue Engineering and Regenerative Medicine, Trento (Italy); Interuniversity Consortium for Science and Technology of Materials, Trento Research Unit, Trento (Italy)

2016-02-01

Silicon plays an important role in bone formation and maintenance, improving osteoblast cell function and inducing mineralization. Often, bone deformation and long bone abnormalities have been associated with silica/silicon deficiency. Diatomite, a natural deposit of diatom skeleton, is a cheap and abundant source of biogenic silica. The aim of the present study is to validate the potential of diatom particles derived from diatom skeletons as silicon-donor materials for bone tissue engineering applications. Raw diatomite (RD) and calcined diatomite (CD) powders were purified by acid treatments, and diatom microparticles (MPs) and nanoparticles (NPs) were produced by fragmentation of purified diatoms under alkaline conditions. The influence of processing on the surface chemical composition of purified diatomites was evaluated by X-ray photoelectron spectroscopy (XPS). Diatoms NPs were also characterized in terms of morphology and size distribution by transmission electron microscopy (TEM) and Dynamic light scattering (DLS), while diatom MPs morphology was analyzed by scanning electron microscopy (SEM). Surface area and microporosity of the diatom particles were evaluated by nitrogen physisorption methods. Release of silicon ions from diatom-derived particles was demonstrated using inductively coupled plasma optical emission spectrometry (ICP/OES); furthermore, silicon release kinetic was found to be influenced by diatomite purification method and particle size. Diatom-derived microparticles (MPs) and nanoparticles (NPs) showed limited or no cytotoxic effect in vitro depending on the administration conditions. - Highlights: • Diatomite is a natural source of silica and has a potential as silicon-donor for bone regenerative applications. • Diatom particles derived from purified diatom skeletons were prepared by fragmentation under extreme alkaline condition. • Dissolution of diatom particles derived from diatom skeletons in DI water depend on purification method

Silicon germanium mask for deep silicon etching

KAUST Repository

Serry, Mohamed

2014-07-29

Polycrystalline silicon germanium (SiGe) can offer excellent etch selectivity to silicon during cryogenic deep reactive ion etching in an SF.sub.6/O.sub.2 plasma. Etch selectivity of over 800:1 (Si:SiGe) may be achieved at etch temperatures from -80 degrees Celsius to -140 degrees Celsius. High aspect ratio structures with high resolution may be patterned into Si substrates using SiGe as a hard mask layer for construction of microelectromechanical systems (MEMS) devices and semiconductor devices.

Silicon germanium mask for deep silicon etching

KAUST Repository

Serry, Mohamed; Rubin, Andrew; Refaat, Mohamed; Sedky, Sherif; Abdo, Mohammad

2014-01-01

Polycrystalline silicon germanium (SiGe) can offer excellent etch selectivity to silicon during cryogenic deep reactive ion etching in an SF.sub.6/O.sub.2 plasma. Etch selectivity of over 800:1 (Si:SiGe) may be achieved at etch temperatures from -80 degrees Celsius to -140 degrees Celsius. High aspect ratio structures with high resolution may be patterned into Si substrates using SiGe as a hard mask layer for construction of microelectromechanical systems (MEMS) devices and semiconductor devices.

Evanescent field phase shifting in a silicon nitride waveguide using a coupled silicon slab

DEFF Research Database (Denmark)

Jensen, Asger Sellerup; Oxenløwe, Leif Katsuo; Green, William M. J.

2015-01-01

An approach for electrical modulation of low-loss silicon nitride waveguides is proposed, using a silicon nitride waveguide evanescently loaded with a thin silicon slab. The thermooptic phase-shift characteristics are investigated in a racetrack resonator configuration....

Selective formation of porous silicon

Science.gov (United States)

Fathauer, Robert W. (Inventor); Jones, Eric W. (Inventor)

1993-01-01

A pattern of porous silicon is produced in the surface of a silicon substrate by forming a pattern of crystal defects in said surface, preferably by applying an ion milling beam through openings in a photoresist layer to the surface, and then exposing said surface to a stain etchant, such as HF:HNO3:H2O. The defected crystal will preferentially etch to form a pattern of porous silicon. When the amorphous content of the porous silicon exceeds 70 percent, the porous silicon pattern emits visible light at room temperature.

Modulation Doping of Silicon using Aluminium-induced Acceptor States in Silicon Dioxide

OpenAIRE

K?nig, Dirk; Hiller, Daniel; Gutsch, Sebastian; Zacharias, Margit; Smith, Sean

2017-01-01

All electronic, optoelectronic or photovoltaic applications of silicon depend on controlling majority charge carriers via doping with impurity atoms. Nanoscale silicon is omnipresent in fundamental research (quantum dots, nanowires) but also approached in future technology nodes of the microelectronics industry. In general, silicon nanovolumes, irrespective of their intended purpose, suffer from effects that impede conventional doping due to fundamental physical principles such as out-diffusi...

Optical property of silicon quantum dots embedded in silicon nitride by thermal annealing

Energy Technology Data Exchange (ETDEWEB)

Kim, Baek Hyun, E-mail: bhkim@andrew.cmu.ed [Department of Materials Science and Engineering, Carnegie Mellon University, Pittsburgh, PA 15213, United Sates (United States); Davis, Robert F. [Department of Materials Science and Engineering, Carnegie Mellon University, Pittsburgh, PA 15213, United Sates (United States); Park, Seong-Ju [Nanophotonic Semiconductors Laboratory, Department of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju, 500-712 (Korea, Republic of)

2010-01-01

We present the effects on the thermal annealing of silicon quantum dots (Si QDs) embedded in silicon nitride. The improved photoluminescence (PL) intensities and the red-shifted PL spectra were obtained with annealing treatment in the range of 700 to 1000 {sup o}C. The shifts of PL spectra were attributed to the increase in the size of Si QDs. The improvement of the PL intensities was also attributed to the reduction of point defects at Si QD/silicon nitride interface and in the silicon nitride due to hydrogen passivation effects.

Silicon nitride films fabricated by a plasma-enhanced chemical vapor deposition method for coatings of the laser interferometer gravitational wave detector

Science.gov (United States)

Pan, Huang-Wei; Kuo, Ling-Chi; Huang, Shu-Yu; Wu, Meng-Yun; Juang, Yu-Hang; Lee, Chia-Wei; Chen, Hsin-Chieh; Wen, Ting Ting; Chao, Shiuh

2018-01-01

Silicon is a potential substrate material for the large-areal-size mirrors of the next-generation laser interferometer gravitational wave detector operated in cryogenics. Silicon nitride thin films uniformly deposited by a chemical vapor deposition method on large-size silicon wafers is a common practice in the silicon integrated circuit industry. We used plasma-enhanced chemical vapor deposition to deposit silicon nitride films on silicon and studied the physical properties of the films that are pertinent to application of mirror coatings for laser interferometer gravitational wave detectors. We measured and analyzed the structure, optical properties, stress, Young's modulus, and mechanical loss of the films, at both room and cryogenic temperatures. Optical extinction coefficients of the films were in the 10-5 range at 1550-nm wavelength. Room-temperature mechanical loss of the films varied in the range from low 10-4 to low 10-5 within the frequency range of interest. The existence of a cryogenic mechanical loss peak depended on the composition of the films. We measured the bond concentrations of N - H , Si - H , Si - N , and Si - Si bonds in the films and analyzed the correlations between bond concentrations and cryogenic mechanical losses. We proposed three possible two-level systems associated with the N - H , Si - H , and Si - N bonds in the film. We inferred that the dominant source of the cryogenic mechanical loss for the silicon nitride films is the two-level system of exchanging position between a H+ and electron lone pair associated with the N - H bond. Under our deposition conditions, superior properties in terms of high refractive index with a large adjustable range, low optical absorption, and low mechanical loss were achieved for films with lower nitrogen content and lower N - H bond concentration. Possible pairing of the silicon nitride films with other materials in the quarter-wave stack is discussed.

Silicon photonics fundamentals and devices

CERN Document Server

Deen, M Jamal

2012-01-01

The creation of affordable high speed optical communications using standard semiconductor manufacturing technology is a principal aim of silicon photonics research. This would involve replacing copper connections with optical fibres or waveguides, and electrons with photons. With applications such as telecommunications and information processing, light detection, spectroscopy, holography and robotics, silicon photonics has the potential to revolutionise electronic-only systems. Providing an overview of the physics, technology and device operation of photonic devices using exclusively silicon and related alloys, the book includes: * Basic Properties of Silicon * Quantum Wells, Wires, Dots and Superlattices * Absorption Processes in Semiconductors * Light Emitters in Silicon * Photodetectors , Photodiodes and Phototransistors * Raman Lasers including Raman Scattering * Guided Lightwaves * Planar Waveguide Devices * Fabrication Techniques and Material Systems Silicon Photonics: Fundamentals and Devices outlines ...

Twenty-fold plasmon-induced enhancement of radiative emission rate in silicon nanocrystals embedded in silicon dioxide

International Nuclear Information System (INIS)

Gardelis, S; Gianneta, V.; Nassiopoulou, A.G

2016-01-01

We report on a 20-fold enhancement of the integrated photoluminescence (PL) emission of silicon nanocrystals, embedded in a matrix of silicon dioxide, induced by excited surface plasmons from silver nanoparticles, which are located in the vicinity of the silicon nanocrystals and separated from them by a silicon dioxide layer of a few nanometers. The electric field enhancement provided by the excited surface plasmons increases the absorption cross section and the emission rate of the nearby silicon nanocrystals, resulting in the observed enhancement of the photoluminescence, mainly attributed to a 20-fold enhancement in the emission rate of the silicon nanocrystals. The observed remarkable improvement of the PL emission makes silicon nanocrystals very useful material for photonic, sensor and solar cell applications.

Frequency effects and properties of plasma deposited fluorinated silicon nitride

International Nuclear Information System (INIS)

Chang, C.; Flamm, D.L.; Ibbotson, D.E.; Mucha, J.A.

1988-01-01

The properties of low-hydrogen, fluorinated plasma-enhanced chemical vapor deposition (PECVD) silicon nitride films grown using NF 3 /SiH 4 /N 2 feed mixtures in 200 kHz and 14 MHz discharges were compared. High-energy ion bombardment at 200 kHz is expected to enhance surface diffusion and chemical reconstruction. Compared to fluorinated silicon nitride deposited at 14 MHz under otherwise comparable conditions, the 200 kHz films had a lower Si--H bond concentration (approx. 21 cm -3 ), lower total hydrogen content (5--8 x 10 21 cm -3 ), better resistance to oxidation, lower compressive stress (-0.7 to -1.5 Gdyne/cm), and higher density (3.1 g/cm 3 ). The dielectric constant of better low-frequency Class I films was constant to 500 MHz, while that of high-frequency films fell up to 15% between 100 Hz and 10 MHz. The absorption edges of low-frequency PECVD fluorinated silicon nitride films were between 5.0 and 6.1 eV, which compare with 4.4 to 5.6 eV for the high-excitation frequency fluorinated material and 3 to 4 eV for conventional PECVD nitride. However high-frequency films may have fewer trap centers and a lower dielectric constant. 14 MHz p-SiN:F films grown with NH 3 as an auxiliary nitrogen source showed absorption edges similar to low-frequency material grown from NF 3 /SiH 4 /N 2 , but they have substantially more N--H bonding. The dielectric constant and absorption edge of these films were comparable to those of low-frequency p-SiN:F from NF 3 /SiH 4 /N 2

Direct Production of Silicones From Sand

Energy Technology Data Exchange (ETDEWEB)

Larry N. Lewis; F.J. Schattenmann: J.P. Lemmon

2001-09-30

Silicon, in the form of silica and silicates, is the second most abundant element in the earth's crust. However the synthesis of silicones (scheme 1) and almost all organosilicon chemistry is only accessible through elemental silicon. Silicon dioxide (sand or quartz) is converted to chemical-grade elemental silicon in an energy intensive reduction process, a result of the exceptional thermodynamic stability of silica. Then, the silicon is reacted with methyl chloride to give a mixture of methylchlorosilanes catalyzed by cooper containing a variety of tract metals such as tin, zinc etc. The so-called direct process was first discovered at GE in 1940. The methylchlorosilanes are distilled to purify and separate the major reaction components, the most important of which is dimethyldichlorosilane. Polymerization of dimethyldichlorosilane by controlled hydrolysis results in the formation of silicone polymers. Worldwide, the silicones industry produces about 1.3 billion pounds of the basic silicon polymer, polydimethylsiloxane.

Flexible Thermoelectric Generators on Silicon Fabric

KAUST Repository

Sevilla, Galo T.

2012-11-01

In this work, the development of a Thermoelectric Generator on Flexible Silicon Fabric is explored to extend silicon electronics for flexible platforms. Low cost, easily deployable plastic based flexible electronics are of great interest for smart textile, wearable electronics and many other exciting applications. However, low thermal budget processing and fundamentally limited electron mobility hinders its potential to be competitive with well established and highly developed silicon technology. The use of silicon in flexible electronics involve expensive and abrasive materials and processes. In this work, high performance flexible thermoelectric energy harvesters are demonstrated from low cost bulk silicon (100) wafers. The fabrication of the micro- harvesters was done using existing silicon processes on silicon (100) and then peeled them off from the original substrate leaving it for reuse. Peeled off silicon has 3.6% thickness of bulk silicon reducing the thermal loss significantly and generating nearly 30% more output power than unpeeled harvesters. The demonstrated generic batch processing shows a pragmatic way of peeling off a whole silicon circuitry after conventional fabrication on bulk silicon wafers for extremely deformable high performance integrated electronics. In summary, by using a novel, low cost process, this work has successfully integrated existing and highly developed fabrication techniques to introduce a flexible energy harvester for sustainable applications.

Subwavelength silicon photonics

International Nuclear Information System (INIS)

Cheben, P.; Bock, P.J.; Schmid, J.H.; Lapointe, J.; Janz, S.; Xu, D.-X.; Densmore, A.; Delage, A.; Lamontagne, B.; Florjanczyk, M.; Ma, R.

2011-01-01

With the goal of developing photonic components that are compatible with silicon microelectronic integrated circuits, silicon photonics has been the subject of intense research activity. Silicon is an excellent material for confining and manipulating light at the submicrometer scale. Silicon optoelectronic integrated devices have the potential to be miniaturized and mass-produced at affordable cost for many applications, including telecommunications, optical interconnects, medical screening, and biological and chemical sensing. We review recent advances in silicon photonics research at the National Research Council Canada. A new type of optical waveguide is presented, exploiting subwavelength grating (SWG) effect. We demonstrate subwavelength grating waveguides made of silicon, including practical components operating at telecom wavelengths: input couplers, waveguide crossings and spectrometer chips. SWG technique avoids loss and wavelength resonances due to diffraction effects and allows for single-mode operation with direct control of the mode confinement by changing the refractive index of a waveguide core over a range as broad as 1.6 - 3.5 simply by lithographic patterning. The light can be launched to these waveguides with a coupling loss as small as 0.5 dB and with minimal wavelength dependence, using coupling structures similar to that shown in Fig. 1. The subwavelength grating waveguides can cross each other with minimal loss and negligible crosstalk which allows massive photonic circuit connectivity to overcome the limits of electrical interconnects. These results suggest that the SWG waveguides could become key elements for future integrated photonic circuits. (authors)

Silicon photonic integration in telecommunications

Directory of Open Access Journals (Sweden)

Christopher Richard Doerr

2015-08-01

Full Text Available Silicon photonics is the guiding of light in a planar arrangement of silicon-based materials to perform various functions. We focus here on the use of silicon photonics to create transmitters and receivers for fiber-optic telecommunications. As the need to squeeze more transmission into a given bandwidth, a given footprint, and a given cost increases, silicon photonics makes more and more economic sense.

Silicon microphones - a Danish perspective

DEFF Research Database (Denmark)

Bouwstra, Siebe; Storgaard-Larsen, Torben; Scheeper, Patrick

1998-01-01

Two application areas of microphones are discussed, those for precision measurement and those for hearing instruments. Silicon microphones are under investigation for both areas, and Danish industry plays a key role in both. The opportunities of silicon, as well as the challenges and expectations......, are discussed. For precision measurement the challenge for silicon is large, while for hearing instruments silicon seems to be very promising....

Integrated silicon optoelectronics

CERN Document Server

Zimmermann, Horst

2000-01-01

'Integrated Silicon Optoelectronics'assembles optoelectronics and microelectronics The book concentrates on silicon as the major basis of modern semiconductor devices and circuits Starting from the basics of optical emission and absorption and from the device physics of photodetectors, the aspects of the integration of photodetectors in modern bipolar, CMOS, and BiCMOS technologies are discussed Detailed descriptions of fabrication technologies and applications of optoelectronic integrated circuits are included The book, furthermore, contains a review of the state of research on eagerly expected silicon light emitters In order to cover the topic of the book comprehensively, integrated waveguides, gratings, and optoelectronic power devices are included in addition Numerous elaborate illustrations promote an easy comprehension 'Integrated Silicon Optoelectronics'will be of value to engineers, physicists, and scientists in industry and at universities The book is also recommendable for graduate students speciali...

Process for making silicon

Science.gov (United States)

Levin, Harry (Inventor)

1987-01-01

A reactor apparatus (10) adapted for continuously producing molten, solar grade purity elemental silicon by thermal reaction of a suitable precursor gas, such as silane (SiH.sub.4), is disclosed. The reactor apparatus (10) includes an elongated reactor body (32) having graphite or carbon walls which are heated to a temperature exceeding the melting temperature of silicon. The precursor gas enters the reactor body (32) through an efficiently cooled inlet tube assembly (22) and a relatively thin carbon or graphite septum (44). The septum (44), being in contact on one side with the cooled inlet (22) and the heated interior of the reactor (32) on the other side, provides a sharp temperature gradient for the precursor gas entering the reactor (32) and renders the operation of the inlet tube assembly (22) substantially free of clogging. The precursor gas flows in the reactor (32) in a substantially smooth, substantially axial manner. Liquid silicon formed in the initial stages of the thermal reaction reacts with the graphite or carbon walls to provide a silicon carbide coating on the walls. The silicon carbide coated reactor is highly adapted for prolonged use for production of highly pure solar grade silicon. Liquid silicon (20) produced in the reactor apparatus (10) may be used directly in a Czochralski or other crystal shaping equipment.

Silicon etch process

International Nuclear Information System (INIS)

Day, D.J.; White, J.C.

1984-01-01

A silicon etch process wherein an area of silicon crystal surface is passivated by radiation damage and non-planar structure produced by subsequent anisotropic etching. The surface may be passivated by exposure to an energetic particle flux - for example an ion beam from an arsenic, boron, phosphorus, silicon or hydrogen source, or an electron beam. Radiation damage may be used for pattern definition and/or as an etch stop. Ethylenediamine pyrocatechol or aqueous potassium hydroxide anisotropic etchants may be used. The radiation damage may be removed after etching by thermal annealing. (author)

Porous silicon gettering

Energy Technology Data Exchange (ETDEWEB)

Tsuo, Y.S.; Menna, P.; Pitts, J.R. [National Renewable Energy Lab., Golden, CO (United States)] [and others

1996-05-01

The authors have studied a novel extrinsic gettering method that uses the large surface areas produced by a porous-silicon etch as gettering sites. The annealing step of the gettering used a high-flux solar furnace. They found that a high density of photons during annealing enhanced the impurity diffusion to the gettering sites. The authors used metallurgical-grade Si (MG-Si) prepared by directional solidification casing as the starting material. They propose to use porous-silicon-gettered MG-Si as a low-cost epitaxial substrate for polycrystalline silicon thin-film growth.

Doping of silicon carbide by ion implantation; Dopage du carbure de silicium par implantation ionique

Energy Technology Data Exchange (ETDEWEB)

Gimbert, J

1999-03-04

It appeared that in some fields, as the hostile environments (high temperature or irradiation), the silicon compounds showed limitations resulting from the electrical and mechanical properties. Doping of 4H and 6H silicon carbide by ion implantation is studied from a physicochemical and electrical point of view. It is necessary to obtain n-type and p-type material to realize high power and/or high frequency devices, such as MESFETs and Schottky diodes. First, physical and electrical properties of silicon carbide are presented and the interest of developing a process technology on this material is emphasised. Then, physical characteristics of ion implantation and particularly classical dopant implantation, such as nitrogen, for n-type doping, and aluminium and boron, for p-type doping are described. Results with these dopants are presented and analysed. Optimal conditions are extracted from these experiences so as to obtain a good crystal quality and a surface state allowing device fabrication. Electrical conduction is then described in the 4H and 6H-SiC polytypes. Freezing of free carriers and scattering processes are described. Electrical measurements are carried out using Hall effect on Van der Panw test patterns, and 4 point probe method are used to draw the type of the material, free carrier concentrations, resistivity and mobility of the implanted doped layers. These results are commented and compared to the theoretical analysis. The influence of the technological process on electrical conduction is studied in view of fabricating implanted silicon carbide devices. (author)

Investigation of the interface region between a porous silicon layer and a silicon substrate

International Nuclear Information System (INIS)

Lee, Ki-Won; Park, Dae-Kyu; Kim, Young-You; Shin, Hyun-Joon

2005-01-01

Atomic force microscopy (AFM) measurement and X-ray diffraction (XRD) analysis were performed to investigate the physical and structural characteristics of the interface region between a porous silicon layer and a silicon substrate. We discovered that, when anodization time was increased under a constant current density, the Si crystallites in the interface region became larger and formed different lattice parameters than observed in the porous silicon layer. Secondary ion mass spectrometry (SIMS) analysis also revealed that the Si was more concentrated in the interface region than in the porous silicon layer. These results were interpreted by the deficiency of the HF solution in reaching to the interface through the pores during the porous silicon formation

Vapor Pressure and Evaporation Coefficient of Silicon Monoxide over a Mixture of Silicon and Silica

Science.gov (United States)

Ferguson, Frank T.; Nuth, Joseph A., III

2012-01-01

The evaporation coefficient and equilibrium vapor pressure of silicon monoxide over a mixture of silicon and vitreous silica have been studied over the temperature range (1433 to 1608) K. The evaporation coefficient for this temperature range was (0.007 plus or minus 0.002) and is approximately an order of magnitude lower than the evaporation coefficient over amorphous silicon monoxide powder and in general agreement with previous measurements of this quantity. The enthalpy of reaction at 298.15 K for this reaction was calculated via second and third law analyses as (355 plus or minus 25) kJ per mol and (363.6 plus or minus 4.1) kJ per mol respectively. In comparison with previous work with the evaporation of amorphous silicon monoxide powder as well as other experimental measurements of the vapor pressure of silicon monoxide gas over mixtures of silicon and silica, these systems all tend to give similar equilibrium vapor pressures when the evaporation coefficient is correctly taken into account. This provides further evidence that amorphous silicon monoxide is an intimate mixture of small domains of silicon and silica and not strictly a true compound.

High temperature corrosion of silicon carbide and silicon nitride in the presence of chloride compound

International Nuclear Information System (INIS)

McNallan, M.

1993-01-01

Silicon carbide and silicon nitride are resistant to oxidation because a protective silicon dioxide films on their surfaces in most oxidizing environments. Chloride compounds can attack the surface in two ways: 1) chlorine can attack the silicon directly to form a volatile silicon chloride compound or 2) alkali compounds combined with the chlorine can be transported to the surface where they flux the silica layer by forming stable alkali silicates. Alkali halides have enough vapor pressure that a sufficient quantity of alkali species to cause accelerated corrosion can be transported to the ceramic surface without the formation of a chloride deposit. When silicon carbide is attacked simultaneously by chlorine and oxygen, the corrosion products include both volatile and condensed spices. Silicon nitride is much more resistance to this type of attack than silicon carbide. Silicon based ceramics are exposed to oxidizing gases in the presence of alkali chloride vapors, the rate of corrosion is controlled primarily by the driving force for the formation of alkali silicate, which can be quantified as the activity of the alkali oxide in equilibrium with the corrosive gas mixture. In a gas mixture containing a fixed partial pressure of KCl, the rate of corrosion is accelerated by increasing the concentration of water vapor and inhibited by increasing the concentration of HCl. Similar results have been obtained for mixtures containing other alkalis and halogens. (Orig./A.B.)

Nitrogen availability for nitrogen fixing cyanobacteria upon growth ...

African Journals Online (AJOL)

The filamentous cyanobacterium Nostoc PCC 7120 is able to convert dinitrogen to ammonia in the absence of combined nitrogen. The expression of 20% of coding sequences from all major metabolic categories was examined in nitrogen fixing and non-nitrogen fixing growth conditions. The expression data were correlated ...

RBS/channeling analysis of hydrogen-implanted single crystals of FZ silicon and 6H silicon

International Nuclear Information System (INIS)

Irwin, R.B.

1984-01-01

Single crystals of FZ silicon and 6H silicon carbide were implanted with hydrogen ions (50 and 80 keV, respectively) to fluences from 2 x 10 16 H + /cm 2 to 2 x 10 18 H+/cm 2 . The implantations were carried out at three temperatures: approx.95K, 300 K, and approx.800 K. Swelling of the samples was measured by surface profilometry. RBS/channeling was used to obtain the damage profiles and to determine the amount of hydrogen retained in the lattice. The damage profiles are centered around X/sub m/ for the implants into silicon and around R/sub p/ for silicon carbide. For silicon carbide implanted at 95 K and 300 K and for silicon implanted at 95 K, the peak damage region is amorphous for fluences above 8 x 10 16 H + /cm 2 , 4 x 10 17 H + /cm 2 , and 2 x 10 17 H + /cm 2 , respectively. Silicon implanted at 300 and 800 K and silicon carbide implanted at 800 K remain crystalline up to fluences of 1 x 10 18 H + /cm 2 . The channeling damage results agree with previously reported TEM and electron diffraction data. The predictions of a simple disorder-accumulation model with a linear annealing term explains qualitatively the observed damage profiles in silicon carbide. Quantitatively, however, the model predicts faster development of the damage profiles than is observed at low fluences in both silicon and silicon carbide. For samples implanted at 300 and 800 K, the model also predicts substantially less peak disorder than is observed. The effect of the surface, the retained hydrogen, the shape of S/sub D/(X), and the need for a nonlinear annealing term may be responsible for the discrepancy

Quantum mechanical theory of epitaxial transformation of silicon to silicon carbide

International Nuclear Information System (INIS)

Kukushkin, S A; Osipov, A V

2017-01-01

The paper focuses on the study of transformation of silicon crystal into silicon carbide crystal via substitution reaction with carbon monoxide gas. As an example, the Si(1 0 0) surface is considered. The cross section of the potential energy surface of the first stage of transformation along the reaction pathway is calculated by the method of nudged elastic bands. It is found that in addition to intermediate states associated with adsorption of CO and SiO molecules on the surface, there is also an intermediate state in which all the atoms are strongly bonded to each other. This intermediate state significantly reduces the activation barrier of transformation down to 2.6 eV. The single imaginary frequencies corresponding to the two transition states of this transformation are calculated, one of which is reactant-like, whereas the other is product-like. By methods of quantum chemistry of solids, the second stage of this transformation is described, namely, the transformation of precarbide silicon into silicon carbide. Energy reduction per one cell is calculated for this ‘collapse’ process, and bond breaking energy is also found. Hence, it is concluded that the smallest size of the collapsing islet is 30 nm. It is shown that the chemical bonds of the initial silicon crystal are coordinately replaced by the bonds between Si and C in silicon carbide, which leads to a high quality of epitaxy and a low concentration of misfit dislocations. (paper)

Activation of chalcogens and chalcogenides at reactive uranium centers

Energy Technology Data Exchange (ETDEWEB)

Franke, Michael Sebastian

2015-07-23

The high reactivity of many trivalent uranium complexes was investigated in the Meyer group, however, these studies were not limited to small-molecule activation, but were extended to other relatively inert reagents like the heavier elemental chalcogens sulfur, selenium, and tellurium. The tripodal N-anchored chelate ({sup Ad,Me}ArO){sub 3}N{sup 3-} (trianion of tris(3-Adamantyl-2-hydroxy-5-methylbenzyl)amine) was found to be a very suitable candidate for this task and the respective uranium(III) complex [(({sup Ad,Me}ArO){sub 3}N)U{sup III}(DME)] is able to activate elemental sulfur and selenium to form the dinuclear, chalcogenido-bridged complexes [{(("A"d","M"eArO)_3N)U"I"V(DME)}{sub 2}(μ-E)] (E = S, Se). Starting from this previously accomplished work, research in this thesis aimed at furthering reactivity studies of trivalent [(({sup Ad,Me}ArO){sub 3}N)U{sup III}(DME)], but also its chalcogenido-bridged uranium(IV) products, and the spectroscopic characterization of all newly synthesized compounds. Furthermore, the development of the new phenol HOAr* (Ar* = 2,6-(CHPh{sub 2}){sub 2}-4-Me-C{sub 6}H{sub 2}, 2,6-bis(diphenylmethyl)-4-methylphenyl) and its establishment as a ligand to be used for uranium coordination chemistry was another goal of this thesis. The activation of CO{sub 2} by uranium(III) complex [(({sup Ad,Me}ArO){sub 3}N)U{sup III}(DME)] to yield the dinuclear, carbonate-bridged uranium(IV/IV) complex [{(("A"d","M"eArO)_3N)U"I"V(DME)}{sub 2}(μ-κ{sup 1}:κ{sup 2}-CO{sub 3})] and CO was reported in 2010 by Meyer and co-workers. These previous results led to the pursuit of the isolation of mixed chalcogenocarbonate complexes from the reaction of the bridging chalcogenidos [{(("A"d","M"eArO)_3N)U"I"V(DME)}{sub 2}(μ-E)] (E = S, Se) with either CO{sub 2} or its heterocumulene analogs COS or CS{sub 2}. The chalcogeno-carbonates [{(("A"d","M"eArO)_3N)U"I"V(DME)}{sub 2}(μ-κ{sup 1}:κ{sup 2}-CO{sub 2}E)] und [{(("A"d","M"eArO)_3N)U"I"V-(DME)}{sub 2}(�

Silicon Nanocrystal Synthesis in Microplasma Reactor

Science.gov (United States)

Nozaki, Tomohiro; Sasaki, Kenji; Ogino, Tomohisa; Asahi, Daisuke; Okazaki, Ken

Nanocrystalline silicon particles with grains smaller than 5 nm are widely recognized as a key material in optoelectronic devices, lithium battery electrodes, and bio-medical labels. Another important characteristic is that silicon is an environmentally safe material that is used in numerous silicon technologies. To date, several synthesis methods such as sputtering, laser ablation, and plasma-enhanced chemical vapor deposition (PECVD) based on low-pressure silane chemistry (SiH4) have been developed for precise control of size and density distributions of silicon nanocrystals. In this study, we explore the possibility of microplasma technologies for efficient production of mono-dispersed nanocrystalline silicon particles on a micrometer-scale, continuous-flow plasma reactor operated at atmospheric pressure. Mixtures of argon, hydrogen, and silicon tetrachloride were activated using a very-high-frequency (144 MHz) power source in a capillary glass tube with volume of less than 1 μl. Fundamental plasma parameters of the microplasma were characterized using optical emission spectroscopy, which respectively indicated electron density of 1015 cm-3, argon excitation temperature of 5000 K, and rotational temperature of 1500 K. Such high-density non-thermal reactive plasma can decompose silicon tetrachloride into atomic silicon to produce supersaturated silicon vapor, followed by gas-phase nucleation via three-body collision: particle synthesis in high-density plasma media is beneficial for promoting nucleation processes. In addition, further growth of silicon nuclei can be terminated in a short-residence-time reactor. Micro-Raman scattering spectra showed that as-deposited particles are mostly amorphous silicon with a small fraction of silicon nanocrystals. Transmission electron micrography confirmed individual 3-15 nm silicon nanocrystals. Although particles were not mono-dispersed, they were well separated and not coagulated.

Nanostructured silicon for thermoelectric

Science.gov (United States)

Stranz, A.; Kähler, J.; Waag, A.; Peiner, E.

2011-06-01

Thermoelectric modules convert thermal energy into electrical energy and vice versa. At present bismuth telluride is the most widely commercial used material for thermoelectric energy conversion. There are many applications where bismuth telluride modules are installed, mainly for refrigeration. However, bismuth telluride as material for energy generation in large scale has some disadvantages. Its availability is limited, it is hot stable at higher temperatures (>250°C) and manufacturing cost is relatively high. An alternative material for energy conversion in the future could be silicon. The technological processing of silicon is well advanced due to the rapid development of microelectronics in recent years. Silicon is largely available and environmentally friendly. The operating temperature of silicon thermoelectric generators can be much higher than of bismuth telluride. Today silicon is rarely used as a thermoelectric material because of its high thermal conductivity. In order to use silicon as an efficient thermoelectric material, it is necessary to reduce its thermal conductivity, while maintaining high electrical conductivity and high Seebeck coefficient. This can be done by nanostructuring into arrays of pillars. Fabrication of silicon pillars using ICP-cryogenic dry etching (Inductive Coupled Plasma) will be described. Their uniform height of the pillars allows simultaneous connecting of all pillars of an array. The pillars have diameters down to 180 nm and their height was selected between 1 micron and 10 microns. Measurement of electrical resistance of single silicon pillars will be presented which is done in a scanning electron microscope (SEM) equipped with nanomanipulators. Furthermore, measurement of thermal conductivity of single pillars with different diameters using the 3ω method will be shown.

The properties of nanocomposite aluminium-silicon based thin films deposited by filtered arc deposition

Energy Technology Data Exchange (ETDEWEB)

Bendavid, A.; Martin, P.J.; Takikawa, H

2002-12-02

Thin films of aluminium silicon oxynitride have been deposited on conducting (100) silicon wafers by filtered arc deposition (FAD) under nitrogen and/or oxygen gas flow. The influence of the N{sub 2}/O{sub 2} flow ratio on the crystal structure, optical and mechanical properties has been investigated. The results of X-ray diffraction showed that the film structure comprised of an AlN crystallite with amorphous Si{sub 3}N{sub 4} and SiO{sub x}. The optical properties over the range of 350-800 nm were measured using spectroscopic ellipsometry and found to be strongly dependent on N{sub 2}/O{sub 2} flow ratio. The refractive index values of the films were measured to be in the range of 2.2-1.64 at a wavelength of 670 nm for oxygen flow range of 0-100%. The hardness of the films was found to be strongly dependent on the oxygen content in the film. The hardness range of the films was between 10 and 22 GPa and for the stress between 0.3 and 1.2 GPa.

Studies on the reactive melt infiltration of silicon and silicon-molybdenum alloys in porous carbon

Science.gov (United States)

Singh, M.; Behrendt, D. R.

1992-01-01

Investigations on the reactive melt infiltration of silicon and silicon-1.7 and 3.2 at percent molybdenum alloys into porous carbon preforms have been carried out by process modeling, differential thermal analysis (DTA) and melt infiltration experiments. These results indicate that the initial pore volume fraction of the porous carbon preform is a critical parameter in determining the final composition of the raction-formed silicon carbide and other residual phases. The pore size of the carbon preform is very detrimental to the exotherm temperatures due to liquid silicon-carbon reactions encountered during the reactive melt infiltration process. A possible mechanism for the liquid silicon-porous (glassy) carbon reaction has been proposed. The composition and microstructure of the reaction-formed silicon carbide has been discussed in terms of carbon preform microstructures, infiltration materials, and temperatures.

Nitrogen nutrition effects on development, growth and nitrogen accumulation of vegetables

NARCIS (Netherlands)

Biemond, H.

1995-01-01

In order to be able to match nitrogen supply and nitrogen requirement of vegetable crops, insight is necessary in the responses to nitrogen of important processes of growth and development. This study focused on effects of amount of nitrogen applied and fractionation of nitrogen supply on

1366 Project Silicon: Reclaiming US Silicon PV Leadership

Energy Technology Data Exchange (ETDEWEB)

Lorenz, Adam [1366 Technologies, Bedford, MA (United States)

2016-02-16

1366 Technologies’ Project Silicon addresses two of the major goals of the DOE’s PV Manufacturing Initiative Part 2 program: 1) How to reclaim a strong silicon PV manufacturing presence and; 2) How to lower the levelized cost of electricity (“LCOE”) for solar to $0.05-$0.07/kWh, enabling wide-scale U.S. market adoption. To achieve these two goals, US companies must commercialize disruptive, high-value technologies that are capable of rapid scaling, defensible from foreign competition, and suited for US manufacturing. These are the aims of 1366 Technologies Direct Wafer ™ process. The research conducted during Project Silicon led to the first industrial scaling of 1366’s Direct Wafer™ process – an innovative, US-friendly (efficient, low-labor content) manufacturing process that destroys the main cost barrier limiting silicon PV cost-reductions: the 35-year-old grand challenge of making quality wafers (40% of the cost of modules) without the cost and waste of sawing. The SunPath program made it possible for 1366 Technologies to build its demonstration factory, a key and critical step in the Company’s evolution. The demonstration factory allowed 1366 to build every step of the process flow at production size, eliminating potential risk and ensuring the success of the Company’s subsequent scaling for a 1 GW factory to be constructed in Western New York in 2016 and 2017. Moreover, the commercial viability of the Direct Wafer process and its resulting wafers were established as 1366 formed key strategic partnerships, gained entry into the $8B/year multi-Si wafer market, and installed modules featuring Direct Wafer products – the veritable proving grounds for the technology. The program also contributed to the development of three Generation 3 Direct Wafer furnaces. These furnaces are the platform for copying intelligently and preparing our supply chain – large-scale expansion will not require a bigger machine but more machines. SunPath filled the

Silicon-micromachined microchannel plates

CERN Document Server

Beetz, C P; Steinbeck, J; Lemieux, B; Winn, D R

2000-01-01

Microchannel plates (MCP) fabricated from standard silicon wafer substrates using a novel silicon micromachining process, together with standard silicon photolithographic process steps, are described. The resulting SiMCP microchannels have dimensions of approx 0.5 to approx 25 mu m, with aspect ratios up to 300, and have the dimensional precision and absence of interstitial defects characteristic of photolithographic processing, compatible with positional matching to silicon electronics readouts. The open channel areal fraction and detection efficiency may exceed 90% on plates up to 300 mm in diameter. The resulting silicon substrates can be converted entirely to amorphous quartz (qMCP). The strip resistance and secondary emission are developed by controlled depositions of thin films, at temperatures up to 1200 deg. C, also compatible with high-temperature brazing, and can be essentially hydrogen, water and radionuclide-free. Novel secondary emitters and cesiated photocathodes can be high-temperature deposite...

Porous silicon carbide (SIC) semiconductor device

Science.gov (United States)

Shor, Joseph S. (Inventor); Kurtz, Anthony D. (Inventor)

1996-01-01

Porous silicon carbide is fabricated according to techniques which result in a significant portion of nanocrystallites within the material in a sub 10 nanometer regime. There is described techniques for passivating porous silicon carbide which result in the fabrication of optoelectronic devices which exhibit brighter blue luminescence and exhibit improved qualities. Based on certain of the techniques described porous silicon carbide is used as a sacrificial layer for the patterning of silicon carbide. Porous silicon carbide is then removed from the bulk substrate by oxidation and other methods. The techniques described employ a two-step process which is used to pattern bulk silicon carbide where selected areas of the wafer are then made porous and then the porous layer is subsequently removed. The process to form porous silicon carbide exhibits dopant selectivity and a two-step etching procedure is implemented for silicon carbide multilayers.

Silicon Photonics Cloud (SiCloud)

DEFF Research Database (Denmark)

DeVore, P. T. S.; Jiang, Y.; Lynch, M.

2015-01-01

Silicon Photonics Cloud (SiCloud.org) is the first silicon photonics interactive web tool. Here we report new features of this tool including mode propagation parameters and mode distribution galleries for user specified waveguide dimensions and wavelengths.......Silicon Photonics Cloud (SiCloud.org) is the first silicon photonics interactive web tool. Here we report new features of this tool including mode propagation parameters and mode distribution galleries for user specified waveguide dimensions and wavelengths....

The Effect of Percentage of Nitrogen in Plasma Gas on Nitrogen ...

African Journals Online (AJOL)

Increase in nitrogen percent in the plasma gas results in increased content of dissociated nitrogen and molecular nitrogen possessing excess vibrational energy and therefore the increased solution of nitrogen in the liquid iron. It would appear that above 35% nitrogen in the plasma gas, frequency of collisions of species in ...

The silicon-silicon oxide multilayers utilization as intrinsic layer on pin solar cells

International Nuclear Information System (INIS)

Colder, H.; Marie, P.; Gourbilleau, F.

2008-01-01

Silicon nanostructures are promising candidate for the intrinsic layer on pin solar cells. In this work we report on new material: silicon-rich silicon oxide (SRSO) deposited by reactive magnetron sputtering of a pure silica target and an interesting structure: multilayers consisting of a stack of SRSO and pure silicon oxide layers. Two thicknesses of the SRSO sublayer, t SRSO , are studied 3 nm and 5 nm whereas the thickness of silica sublayer is maintaining at 3 nm. The presence of nanocrystallites of silicon, evidenced by X-Ray diffraction (XRD), leads to photoluminescence (PL) emission at room temperature due to the quantum confinement of the carriers. The PL peak shifts from 1.3 eV to 1.5 eV is correlated to the decreasing of t SRSO from 5 nm down to 3 nm. In the purpose of their potential utilization for i-layer, the optical properties are studied by absorption spectroscopy. The achievement a such structures at promising absorption properties. Moreover by favouring the carriers injection by the tunnel effect between silicon nanograins and silica sublayers, the multilayers seem to be interesting for solar cells

Method of forming buried oxide layers in silicon

Science.gov (United States)

Sadana, Devendra Kumar; Holland, Orin Wayne

2000-01-01

A process for forming Silicon-On-Insulator is described incorporating the steps of ion implantation of oxygen into a silicon substrate at elevated temperature, ion implanting oxygen at a temperature below 200.degree. C. at a lower dose to form an amorphous silicon layer, and annealing steps to form a mixture of defective single crystal silicon and polycrystalline silicon or polycrystalline silicon alone and then silicon oxide from the amorphous silicon layer to form a continuous silicon oxide layer below the surface of the silicon substrate to provide an isolated superficial layer of silicon. The invention overcomes the problem of buried isolated islands of silicon oxide forming a discontinuous buried oxide layer.

Effects of ion implantation on charges in the silicon--silicon dioxide system

International Nuclear Information System (INIS)

Learn, A.J.; Hess, D.W.

1977-01-01

Structures consisting of thermally grown oxide on silicon were implanted with boron, arsenic, or argon ions. For argon implantation through oxides, an increased fixed oxide charge (Q/sub ss/) was observed with the increase being greater for than for silicon. This effect is attributed to oxygen recoil which produces additional excess ionized silicon in the oxide of a type similar to that arising in thermal oxidation. Fast surface state (N/sub st/) generation was also noted which in most cases obscured the Q/sub ss/ increase. Of various heat treatments tested, only a 900 degreeC anneal in hydrogen annihilated N/sub st/ and allowed Q/sub ss/ measurement. Such N/sub st/ apparently arises as a consequence of implantation damage at the silicon--silicon dioxide interface. With the exception of boron implantations into thick oxides or through aluminum electrodes, reduction of the mobile ionic charge (Q/sub o/) was achieved by implantation. The reduction again is presumably damage related and is not negated by high-temperature annealing but may be counterbalanced by aluminum incorporation in the oxide

High Efficiency, Low Cost Solar Cells Manufactured Using 'Silicon Ink' on Thin Crystalline Silicon Wafers

Energy Technology Data Exchange (ETDEWEB)

Antoniadis, H.

2011-03-01

Reported are the development and demonstration of a 17% efficient 25mm x 25mm crystalline Silicon solar cell and a 16% efficient 125mm x 125mm crystalline Silicon solar cell, both produced by Ink-jet printing Silicon Ink on a thin crystalline Silicon wafer. To achieve these objectives, processing approaches were developed to print the Silicon Ink in a predetermined pattern to form a high efficiency selective emitter, remove the solvents in the Silicon Ink and fuse the deposited particle Silicon films. Additionally, standard solar cell manufacturing equipment with slightly modified processes were used to complete the fabrication of the Silicon Ink high efficiency solar cells. Also reported are the development and demonstration of a 18.5% efficient 125mm x 125mm monocrystalline Silicon cell, and a 17% efficient 125mm x 125mm multicrystalline Silicon cell, by utilizing high throughput Ink-jet and screen printing technologies. To achieve these objectives, Innovalight developed new high throughput processing tools to print and fuse both p and n type particle Silicon Inks in a predetermined pat-tern applied either on the front or the back of the cell. Additionally, a customized Ink-jet and screen printing systems, coupled with customized substrate handling solution, customized printing algorithms, and a customized ink drying process, in combination with a purchased turn-key line, were used to complete the high efficiency solar cells. This development work delivered a process capable of high volume producing 18.5% efficient crystalline Silicon solar cells and enabled the Innovalight to commercialize its technology by the summer of 2010.

Silicon-micromachined microchannel plates

International Nuclear Information System (INIS)

Beetz, Charles P.; Boerstler, Robert; Steinbeck, John; Lemieux, Bryan; Winn, David R.

2000-01-01

Microchannel plates (MCP) fabricated from standard silicon wafer substrates using a novel silicon micromachining process, together with standard silicon photolithographic process steps, are described. The resulting SiMCP microchannels have dimensions of ∼0.5 to ∼25 μm, with aspect ratios up to 300, and have the dimensional precision and absence of interstitial defects characteristic of photolithographic processing, compatible with positional matching to silicon electronics readouts. The open channel areal fraction and detection efficiency may exceed 90% on plates up to 300 mm in diameter. The resulting silicon substrates can be converted entirely to amorphous quartz (qMCP). The strip resistance and secondary emission are developed by controlled depositions of thin films, at temperatures up to 1200 deg. C, also compatible with high-temperature brazing, and can be essentially hydrogen, water and radionuclide-free. Novel secondary emitters and cesiated photocathodes can be high-temperature deposited or nucleated in the channels or the first strike surface. Results on resistivity, secondary emission and gain are presented

Removal of inclusions from silicon

Science.gov (United States)

Ciftja, Arjan; Engh, Thorvald Abel; Tangstad, Merete; Kvithyld, Anne; Øvrelid, Eivind Johannes

2009-11-01

The removal of inclusions from molten silicon is necessary to satisfy the purity requirements for solar grade silicon. This paper summarizes two methods that are investigated: (i) settling of the inclusions followed by subsequent directional solidification and (infiltration by ceramic foam filters. Settling of inclusions followed by directional solidification is of industrial importance for production of low-cost solar grade silicon. Filtration is reported as the most efficient method for removal of inclusions from the top-cut silicon scrap.

Silicon Tracking Upgrade at CDF

International Nuclear Information System (INIS)

Kruse, M.C.

1998-04-01

The Collider Detector at Fermilab (CDF) is scheduled to begin recording data from Run II of the Fermilab Tevatron in early 2000. The silicon tracking upgrade constitutes both the upgrade to the CDF silicon vertex detector (SVX II) and the new Intermediate Silicon Layers (ISL) located at radii just beyond the SVX II. Here we review the design and prototyping of all aspects of these detectors including mechanical design, data acquisition, and a trigger based on silicon tracking

Investigation of Physical Properties and Electrochemical Behavior of Nitrogen-Doped Diamond-Like Carbon Thin Films

Directory of Open Access Journals (Sweden)

Rattanakorn Saensak

2014-03-01

Full Text Available This work reports characterizations of diamond-like carbon (DLC films used as electrodes for electrochemical applications. DLC thin films are prepared on glass slides and silicon substrates by radio frequency plasma enhanced chemical vapor deposition (RF-PECVD using a gas mixture of methane and hydrogen. In addition, the DLC films are doped with nitrogen in order to reduce electrical resistivity. Compared to the undoped DLC films, the electrical resistivity of nitrogen-doped (N-doped DLC films is decreased by three orders of magnitude. Raman spectroscopy and UV/Vis spectroscopy analyses show the structural transformation in N-doped DLC films that causes the reduction of band gap energy. Contact angle measurement at N-doped DLC films indicates increased hydrophobicity. The results obtained from the cyclic voltammetry measurements with Fe(CN63-/Fe(CN64- redox species exhibit the correlation between the physical properties and electrochemical behavior of DLC films.

Silicon Alloying On Aluminium Based Alloy Surface

International Nuclear Information System (INIS)

Suryanto

2002-01-01

Silicon alloying on surface of aluminium based alloy was carried out using electron beam. This is performed in order to enhance tribological properties of the alloy. Silicon is considered most important alloying element in aluminium alloy, particularly for tribological components. Prior to silicon alloying. aluminium substrate were painted with binder and silicon powder and dried in a furnace. Silicon alloying were carried out in a vacuum chamber. The Silicon alloyed materials were assessed using some techniques. The results show that silicon alloying formed a composite metal-non metal system in which silicon particles are dispersed in the alloyed layer. Silicon content in the alloyed layer is about 40% while in other place is only 10.5 %. The hardness of layer changes significantly. The wear properties of the alloying alloys increase. Silicon surface alloying also reduced the coefficient of friction for sliding against a hardened steel counter face, which could otherwise be higher because of the strong adhesion of aluminium to steel. The hardness of the silicon surface alloyed material dropped when it underwent a heating cycle similar to the ion coating process. Hence, silicon alloying is not a suitable choice for use as an intermediate layer for duplex treatment

Silicon microfabricated beam expander

Science.gov (United States)

Othman, A.; Ibrahim, M. N.; Hamzah, I. H.; Sulaiman, A. A.; Ain, M. F.

2015-03-01

The feasibility design and development methods of silicon microfabricated beam expander are described. Silicon bulk micromachining fabrication technology is used in producing features of the structure. A high-precision complex 3-D shape of the expander can be formed by exploiting the predictable anisotropic wet etching characteristics of single-crystal silicon in aqueous Potassium-Hydroxide (KOH) solution. The beam-expander consist of two elements, a micromachined silicon reflector chamber and micro-Fresnel zone plate. The micro-Fresnel element is patterned using lithographic methods. The reflector chamber element has a depth of 40 µm, a diameter of 15 mm and gold-coated surfaces. The impact on the depth, diameter of the chamber and absorption for improved performance are discussed.

Silicon germanium as a novel mask for silicon deep reactive ion etching

KAUST Repository

Serry, Mohamed Y.

2013-10-01

This paper reports on the use of p-type polycrystalline silicon germanium (poly-Si1-xGex) thin films as a new masking material for the cryogenic deep reactive ion etching (DRIE) of silicon. We investigated the etching behavior of various poly-Si1-xGex:B (0silicon, silicon oxide, and photoresist was determined at different etching temperatures, ICP and RF powers, and SF6 to O2 ratios. The study demonstrates that the etching selectivity of the SiGe mask for silicon depends strongly on three factors: Ge content; boron concentration; and etching temperature. Compared to conventional SiO2 and SiN masks, the proposed SiGe masking material exhibited several advantages, including high etching selectivity to silicon (>1:800). Furthermore, the SiGe mask was etched in SF6/O2 plasma at temperatures ≥ - 80°C and at rates exceeding 8 μm/min (i.e., more than 37 times faster than SiO2 or SiN masks). Because of the chemical and thermodynamic stability of the SiGe film as well as the electronic properties of the mask, it was possible to deposit the proposed film at CMOS backend compatible temperatures. The paper also confirms that the mask can easily be dry-removed after the process with high etching-rate by controlling the ICP and RF power and the SF6 to O2 ratios, and without affecting the underlying silicon substrate. Using low ICP and RF power, elevated temperatures (i.e., > - 80°C), and an adjusted O2:SF6 ratio (i.e., ~6%), we were able to etch away the SiGe mask without adversely affecting the final profile. Ultimately, we were able to develop deep silicon- trenches with high aspect ratio etching straight profiles. © 1992-2012 IEEE.

Structural modification of silicon during the formation process of porous silicon

International Nuclear Information System (INIS)

Martin-Palma, R.J.; Pascual, L.; Landa-Canovas, A.R.; Herrero, P.; Martinez-Duart, J.M.

2005-01-01

Direct examination of porous silicon (PS) by the use of high resolution transmission electron microscopy (HRTEM) allowed us to perform a deep insight into the formation mechanisms of this material. In particular, the structure of the PS/Si interface and that of the silicon nanocrystals that compose porous silicon were analyzed in detail. Furthermore, image processing was used to study in detail the structure of PS. The mechanism of PS formation and lattice matching between the PS layer and the Si substrate is analyzed and discussed. Finally, a formation mechanism for PS based on the experimental observations is proposed

Development of low cost silicon solar cells by reusing the silicon saw dust collected during wafering process

International Nuclear Information System (INIS)

Zaidi, Z.I.; Raza, B.; Ahmed, M.; Sheikh, H.; Qazi, I.A.

2002-01-01

Silicon material due to its abundance in nature and maximum conversion efficiency has been successfully being used for the fabrication of electronic and photovoltaic devices such as ICs, diodes, transistors and solar cells. The 80% of the semiconductor industry is ruled by silicon material. Single crystal silicon solar cells are in use for both space and terrestrial application, due to the well developed technology and better efficiency than polycrystalline and amorphous silicon solar cells. The current research work is an attempt to reduce the cost of single crystal silicon solar cells by reusing the silicon saw dust obtained during the watering process. During the watering process about 45% Si material is wasted in the form of Si powder dust. Various waste powder silicon samples were analyzed using inductively Coupled Plasma (ICP) technique, for metallic impurities critical for solar grade silicon material. The results were evaluated from impurity and cost point of view. (author)

Thin film silicon on silicon nitride for radiation hardened dielectrically isolated MISFET's

International Nuclear Information System (INIS)

Neamen, D.; Shedd, W.; Buchanan, B.

1975-01-01

The permanent ionizing radiation effects resulting from charge trapping in a silicon nitride isolation dielectric have been determined for a total ionizing dose up to 10 7 rads (Si). Junction FET's, whose active channel region is directly adjacent to the silicon-silicon nitride interface, were used to measure the effects of the radiation induced charge trapping in the Si 3 N 4 isolation dielectric. The JFET saturation current and channel conductance versus junction gate voltage and substrate voltage were characterized as a function of the total ionizing radiation dose. The experimental results on the Si 3 N 4 are compared to results on similar devices with SiO 2 dielectric isolation. The ramifications of using the silicon nitride for fabricating radiation hardened dielectrically isolated MIS devices are discussed

The silicon vertex tracker for star and future applications of silicon drift detectors

International Nuclear Information System (INIS)

Bellwied, Rene

2001-01-01

The Silicon Vertex Tracker (SVT) for the STAR experiment at the Relativistic Heavy Ion Collider at Brookhaven National Laboratory has recently been completed and installed. First data were taken in July 2001. The SVT is based on a novel semi-conductor technology called Silicon Drift Detectors. 216 large area (6 by 6 cm) Silicon wafers were employed to build a three barrel device capable of vertexing and tracking in a high occupancy environment. Its intrinsic radiation hardness, its operation at room temperature and its excellent position resolution (better than 20 micron) in two dimensions with a one dimensional detector readout, make this technology very robust and inexpensive and thus a viable alternative to CCD, Silicon pixel and Silicon strip detectors in a variety of applications from fundamental research in high-energy and nuclear physics to astrophysics to medical imaging. I will describe the development that led to the STAR-SVT, its performance and possible applications for the near future

Optoelectronic enhancement of monocrystalline silicon solar cells by porous silicon-assisted mechanical grooving

Energy Technology Data Exchange (ETDEWEB)

Ben Rabha, Mohamed; Mohamed, Seifeddine Belhadj; Dimassi, Wissem; Gaidi, Mounir; Ezzaouia, Hatem; Bessais, Brahim [Laboratoire de Photovoltaique, Centre de Recherches et des Technologies de l' Energie, Technopole de Borj-Cedria, BP 95, 2050 Hammam-Lif (Tunisia)

2011-03-15

One of the most important factors influencing silicon solar cells performances is the front side reflectivity. Consequently, new methods for efficient reduction of this reflectivity are searched. This has always been done by creating a rough surface that enables incident light of being absorbed within the solar cell. Combination of texturization-porous silicon surface treatment was found to be an attractive technical solution for lowering the reflectivity of monocrystalline silicon (c-Si). The texturization of the monocrystalline silicon wafer was carried out by means of mechanical grooving. A specific etching procedure was then applied to form a thin porous silicon layer enabling to remove mechanical damages. This simple and low cost method reduces the total reflectivity from 29% to 7% in the 300 - 950 nm wavelength range and enhances the diffusion length of the minority carriers from 100 {mu}m to 790 {mu}m (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

The dark side of silicon energy efficient computing in the dark silicon era

CERN Document Server

Liljeberg, Pasi; Hemani, Ahmed; Jantsch, Axel; Tenhunen, Hannu

2017-01-01

This book presents the state-of-the art of one of the main concerns with microprocessors today, a phenomenon known as "dark silicon". Readers will learn how power constraints (both leakage and dynamic power) limit the extent to which large portions of a chip can be powered up at a given time, i.e. how much actual performance and functionality the microprocessor can provide. The authors describe their research toward the future of microprocessor development in the dark silicon era, covering a variety of important aspects of dark silicon-aware architectures including design, management, reliability, and test. Readers will benefit from specific recommendations for mitigating the dark silicon phenomenon, including energy-efficient, dedicated solutions and technologies to maximize the utilization and reliability of microprocessors. Enables readers to understand the dark silicon phenomenon and why it has emerged, including detailed analysis of its impacts; Presents state-of-the-art research, as well as tools for mi...

Mechanically flexible optically transparent silicon fabric with high thermal budget devices from bulk silicon (100)

KAUST Repository

Hussain, Muhammad Mustafa

2013-05-30

Today’s information age is driven by silicon based electronics. For nearly four decades semiconductor industry has perfected the fabrication process of continuingly scaled transistor – heart of modern day electronics. In future, silicon industry will be more pervasive, whose application will range from ultra-mobile computation to bio-integrated medical electronics. Emergence of flexible electronics opens up interesting opportunities to expand the horizon of electronics industry. However, silicon – industry’s darling material is rigid and brittle. Therefore, we report a generic batch fabrication process to convert nearly any silicon electronics into a flexible one without compromising its (i) performance; (ii) ultra-large-scale-integration complexity to integrate billions of transistors within small areas; (iii) state-of-the-art process compatibility, (iv) advanced materials used in modern semiconductor technology; (v) the most widely used and well-studied low-cost substrate mono-crystalline bulk silicon (100). In our process, we make trenches using anisotropic reactive ion etching (RIE) in the inactive areas (in between the devices) of a silicon substrate (after the devices have been fabricated following the regular CMOS process), followed by a dielectric based spacer formation to protect the sidewall of the trench and then performing an isotropic etch to create caves in silicon. When these caves meet with each other the top portion of the silicon with the devices is ready to be peeled off from the bottom silicon substrate. Release process does not need to use any external support. Released silicon fabric (25 μm thick) is mechanically flexible (5 mm bending radius) and the trenches make it semi-transparent (transparency of 7%). © (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.

Mechanically flexible optically transparent silicon fabric with high thermal budget devices from bulk silicon (100)

KAUST Repository

Hussain, Muhammad Mustafa; Rojas, Jhonathan Prieto; Sevilla, Galo T.

2013-01-01

Today’s information age is driven by silicon based electronics. For nearly four decades semiconductor industry has perfected the fabrication process of continuingly scaled transistor – heart of modern day electronics. In future, silicon industry will be more pervasive, whose application will range from ultra-mobile computation to bio-integrated medical electronics. Emergence of flexible electronics opens up interesting opportunities to expand the horizon of electronics industry. However, silicon – industry’s darling material is rigid and brittle. Therefore, we report a generic batch fabrication process to convert nearly any silicon electronics into a flexible one without compromising its (i) performance; (ii) ultra-large-scale-integration complexity to integrate billions of transistors within small areas; (iii) state-of-the-art process compatibility, (iv) advanced materials used in modern semiconductor technology; (v) the most widely used and well-studied low-cost substrate mono-crystalline bulk silicon (100). In our process, we make trenches using anisotropic reactive ion etching (RIE) in the inactive areas (in between the devices) of a silicon substrate (after the devices have been fabricated following the regular CMOS process), followed by a dielectric based spacer formation to protect the sidewall of the trench and then performing an isotropic etch to create caves in silicon. When these caves meet with each other the top portion of the silicon with the devices is ready to be peeled off from the bottom silicon substrate. Release process does not need to use any external support. Released silicon fabric (25 μm thick) is mechanically flexible (5 mm bending radius) and the trenches make it semi-transparent (transparency of 7%). © (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.

Colloidal characterization of silicon nitride and silicon carbide

Science.gov (United States)

Feke, Donald L.

1986-01-01

The colloidal behavior of aqueous ceramic slips strongly affects the forming and sintering behavior and the ultimate mechanical strength of the final ceramic product. The colloidal behavior of these materials, which is dominated by electrical interactions between the particles, is complex due to the strong interaction of the solids with the processing fluids. A surface titration methodology, modified to account for this interaction, was developed and used to provide fundamental insights into the interfacial chemistry of these systems. Various powder pretreatment strategies were explored to differentiate between true surface chemistry and artifacts due to exposure history. The colloidal behavior of both silicon nitride and carbide is dominated by silanol groups on the powder surfaces. However, the colloid chemistry of silicon nitride is apparently influenced by an additional amine group. With the proper powder treatments, silicon nitride and carbide powder can be made to appear colloidally equivalent. The impact of these results on processing control will be discussed.

Silicon-to-silicon wafer bonding using evaporated glass

DEFF Research Database (Denmark)

Weichel, Steen; Reus, Roger De; Lindahl, M.

1998-01-01

Anodic bending of silicon to silicon 4-in. wafers using an electron-beam evaporated glass (Schott 8329) was performed successfully in air at temperatures ranging from 200 degrees C to 450 degrees C. The composition of the deposited glass is enriched in sodium as compared to the target material....... The roughness of the as-deposited films was below 5 nm and was found to be unchanged by annealing at 500 degrees C for 1 h in air. No change in the macroscopic edge profiles of the glass film was found as a function of annealing; however, small extrusions appear when annealing above 450 degrees C. Annealing...... of silicon/glass structures in air around 340 degrees C for 15 min leads to stress-free structures. Bonded wafer pairs, however, show no reduction in stress and always exhibit compressive stress. The bond yield is larger than 95% for bonding temperatures around 350 degrees C and is above 80% for bonding...

Elite silicon and solar power

International Nuclear Information System (INIS)

Yasamanov, N.A.

2000-01-01

The article is of popular character, the following issues being considered: conversion of solar energy into electric one, solar batteries in space and on the Earth, growing of silicon large-size crystals, source material problems relating to silicon monocrystals production, outlooks of solar silicon batteries production [ru

Porous silicon: X-rays sensitivity

International Nuclear Information System (INIS)

Gerstenmayer, J.L.; Vibert, Patrick; Mercier, Patrick; Rayer, Claude; Hyvernage, Michel; Herino, Roland; Bsiesy, Ahmad

1994-01-01

We demonstrate that high porosity anodically porous silicon is radioluminescent. Interests of this study are double. Firstly: is the construction of porous silicon X-rays detectors (imagers) possible? Secondly: is it necessary to protect silicon porous based optoelectronic systems from ionising radiations effects (spatial environment)? ((orig.))

High-density oxidized porous silicon

International Nuclear Information System (INIS)

Gharbi, Ahmed; Souifi, Abdelkader; Remaki, Boudjemaa; Halimaoui, Aomar; Bensahel, Daniel

2012-01-01

We have studied oxidized porous silicon (OPS) properties using Fourier transform infraRed (FTIR) spectroscopy and capacitance–voltage C–V measurements. We report the first experimental determination of the optimum porosity allowing the elaboration of high-density OPS insulators. This is an important contribution to the research of thick integrated electrical insulators on porous silicon based on an optimized process ensuring dielectric quality (complete oxidation) and mechanical and chemical reliability (no residual pores or silicon crystallites). Through the measurement of the refractive indexes of the porous silicon (PS) layer before and after oxidation, one can determine the structural composition of the OPS material in silicon, air and silica. We have experimentally demonstrated that a porosity approaching 56% of the as-prepared PS layer is required to ensure a complete oxidation of PS without residual silicon crystallites and with minimum porosity. The effective dielectric constant values of OPS materials determined from capacitance–voltage C–V measurements are discussed and compared to FTIR results predictions. (paper)

Silicon spintronics with ferromagnetic tunnel devices

International Nuclear Information System (INIS)

Jansen, R; Sharma, S; Dash, S P; Min, B C

2012-01-01

In silicon spintronics, the unique qualities of ferromagnetic materials are combined with those of silicon, aiming at creating an alternative, energy-efficient information technology in which digital data are represented by the orientation of the electron spin. Here we review the cornerstones of silicon spintronics, namely the creation, detection and manipulation of spin polarization in silicon. Ferromagnetic tunnel contacts are the key elements and provide a robust and viable approach to induce and probe spins in silicon, at room temperature. We describe the basic physics of spin tunneling into silicon, the spin-transport devices, the materials aspects and engineering of the magnetic tunnel contacts, and discuss important quantities such as the magnitude of the spin accumulation and the spin lifetime in the silicon. We highlight key experimental achievements and recent progress in the development of a spin-based information technology. (topical review)

Study of double porous silicon surfaces for enhancement of silicon solar cell performance

Science.gov (United States)

Razali, N. S. M.; Rahim, A. F. A.; Radzali, R.; Mahmood, A.

2017-09-01

In this work, design and simulation of double porous silicon surfaces for enhancement of silicon solar cell is carried out. Both single and double porous structures are constructed by using TCAD ATHENA and TCAD DEVEDIT tools of the SILVACO software respectively. After the structures were created, I-V characteristics and spectral response of the solar cell were extracted using ATLAS device simulator. Finally, the performance of the simulated double porous solar cell is compared with the performance of both single porous and bulk-Si solar cell. The results showed that double porous silicon solar cell exhibited 1.8% efficiency compared to 1.3% and 1.2% for single porous silicon and bulk-Si solar cell.

All-solid-state supercapacitors on silicon using graphene from silicon carbide

Energy Technology Data Exchange (ETDEWEB)

Wang, Bei; Ahmed, Mohsin; Iacopi, Francesca, E-mail: f.iacopi@griffith.edu.au [Environmental Futures Research Institute, Griffith University, Nathan 4111 (Australia); Wood, Barry [Centre for Microscopy and Microanalysis, The University of Queensland, St. Lucia 4072 (Australia)

2016-05-02

Carbon-based supercapacitors are lightweight devices with high energy storage performance, allowing for faster charge-discharge rates than batteries. Here, we present an example of all-solid-state supercapacitors on silicon for on-chip applications, paving the way towards energy supply systems embedded in miniaturized electronics with fast access and high safety of operation. We present a nickel-assisted graphitization method from epitaxial silicon carbide on a silicon substrate to demonstrate graphene as a binder-free electrode material for all-solid-state supercapacitors. We obtain graphene electrodes with a strongly enhanced surface area, assisted by the irregular intrusion of nickel into the carbide layer, delivering a typical double-layer capacitance behavior with a specific area capacitance of up to 174 μF cm{sup −2} with about 88% capacitance retention over 10 000 cycles. The fabrication technique illustrated in this work provides a strategic approach to fabricate micro-scale energy storage devices compatible with silicon electronics and offering ultimate miniaturization capabilities.

All-solid-state supercapacitors on silicon using graphene from silicon carbide

International Nuclear Information System (INIS)

Wang, Bei; Ahmed, Mohsin; Iacopi, Francesca; Wood, Barry

2016-01-01

Carbon-based supercapacitors are lightweight devices with high energy storage performance, allowing for faster charge-discharge rates than batteries. Here, we present an example of all-solid-state supercapacitors on silicon for on-chip applications, paving the way towards energy supply systems embedded in miniaturized electronics with fast access and high safety of operation. We present a nickel-assisted graphitization method from epitaxial silicon carbide on a silicon substrate to demonstrate graphene as a binder-free electrode material for all-solid-state supercapacitors. We obtain graphene electrodes with a strongly enhanced surface area, assisted by the irregular intrusion of nickel into the carbide layer, delivering a typical double-layer capacitance behavior with a specific area capacitance of up to 174 μF cm"−"2 with about 88% capacitance retention over 10 000 cycles. The fabrication technique illustrated in this work provides a strategic approach to fabricate micro-scale energy storage devices compatible with silicon electronics and offering ultimate miniaturization capabilities.

Enhanced Raman scattering in porous silicon grating.

Science.gov (United States)

Wang, Jiajia; Jia, Zhenhong; Lv, Changwu

2018-03-19

The enhancement of Raman signal on monocrystalline silicon gratings with varying groove depths and on porous silicon grating were studied for a highly sensitive surface enhanced Raman scattering (SERS) response. In the experiment conducted, porous silicon gratings were fabricated. Silver nanoparticles (Ag NPs) were then deposited on the porous silicon grating to enhance the Raman signal of the detective objects. Results show that the enhancement of Raman signal on silicon grating improved when groove depth increased. The enhanced performance of Raman signal on porous silicon grating was also further improved. The Rhodamine SERS response based on Ag NPs/ porous silicon grating substrates was enhanced relative to the SERS response on Ag NPs/ porous silicon substrates. Ag NPs / porous silicon grating SERS substrate system achieved a highly sensitive SERS response due to the coupling of various Raman enhancement factors.

Strong Photoluminescence Enhancement of Silicon Oxycarbide through Defect Engineering

Directory of Open Access Journals (Sweden)

Brian Ford

2017-04-01

Full Text Available The following study focuses on the photoluminescence (PL enhancement of chemically synthesized silicon oxycarbide (SiCxOy thin films and nanowires through defect engineering via post-deposition passivation treatments. SiCxOy materials were deposited via thermal chemical vapor deposition (TCVD, and exhibit strong white light emission at room-temperature. Post-deposition passivation treatments were carried out using oxygen, nitrogen, and forming gas (FG, 5% H2, 95% N2 ambients, modifying the observed white light emission. The observed white luminescence was found to be inversely related to the carbonyl (C=O bond density present in the films. The peak-to-peak PL was enhanced ~18 and ~17 times for, respectively, the two SiCxOy matrices, oxygen-rich and carbon-rich SiCxOy, via post-deposition passivations. Through a combinational and systematic Fourier transform infrared spectroscopy (FTIR and PL study, it was revealed that proper tailoring of the passivations reduces the carbonyl bond density by a factor of ~2.2, corresponding to a PL enhancement of ~50 times. Furthermore, the temperature-dependent and temperature-dependent time resolved PL (TDPL and TD-TRPL behaviors of the nitrogen and forming gas passivated SiCxOy thin films were investigated to acquire further insight into the ramifications of the passivation on the carbonyl/dangling bond density and PL yield.

Photo-EMF Sensitivity of Porous Silicon Thin Layer–Crystalline Silicon Heterojunction to Ammonia Adsorption

Directory of Open Access Journals (Sweden)

Kae Dal Kwack

2011-01-01

Full Text Available A new method of using photo-electromotive force in detecting gas and controlling sensitivity is proposed. Photo-electromotive force on the heterojunction between porous silicon thin layer and crystalline silicon wafer depends on the concentration of ammonia in the measurement chamber. A porous silicon thin layer was formed by electrochemical etching on p-type silicon wafer. A gas and light transparent electrical contact was manufactured to this porous layer. Photo-EMF sensitivity corresponding to ammonia concentration in the range from 10 ppm to 1,000 ppm can be maximized by controlling the intensity of illumination light.

Photo-EMF sensitivity of porous silicon thin layer-crystalline silicon heterojunction to ammonia adsorption.

Science.gov (United States)

Vashpanov, Yuriy; Jung, Jae Il; Kwack, Kae Dal

2011-01-01

A new method of using photo-electromotive force in detecting gas and controlling sensitivity is proposed. Photo-electromotive force on the heterojunction between porous silicon thin layer and crystalline silicon wafer depends on the concentration of ammonia in the measurement chamber. A porous silicon thin layer was formed by electrochemical etching on p-type silicon wafer. A gas and light transparent electrical contact was manufactured to this porous layer. Photo-EMF sensitivity corresponding to ammonia concentration in the range from 10 ppm to 1,000 ppm can be maximized by controlling the intensity of illumination light.

Photo-EMF Sensitivity of Porous Silicon Thin Layer–Crystalline Silicon Heterojunction to Ammonia Adsorption

Science.gov (United States)

Vashpanov, Yuriy; Jung, Jae Il; Kwack, Kae Dal

2011-01-01

A new method of using photo-electromotive force in detecting gas and controlling sensitivity is proposed. Photo-electromotive force on the heterojunction between porous silicon thin layer and crystalline silicon wafer depends on the concentration of ammonia in the measurement chamber. A porous silicon thin layer was formed by electrochemical etching on p-type silicon wafer. A gas and light transparent electrical contact was manufactured to this porous layer. Photo-EMF sensitivity corresponding to ammonia concentration in the range from 10 ppm to 1,000 ppm can be maximized by controlling the intensity of illumination light. PMID:22319353

Reduction of absorption loss in multicrystalline silicon via combination of mechanical grooving and porous silicon

Energy Technology Data Exchange (ETDEWEB)

Ben Rabha, Mohamed; Mohamed, Seifeddine Belhadj; Dimassi, Wissem; Gaidi, Mounir; Ezzaouia, Hatem; Bessais, Brahim [Laboratoire de Photovoltaique, Centre de Recherches et des Technologies de l' Energie, Technopole de Borj-Cedria, BP 95, 2050 Hammam-Lif (Tunisia)

2011-03-15

Surface texturing of silicon wafer is a key step to enhance light absorption and to improve the solar cell performances. While alkaline-texturing of single crystalline silicon wafers was well established, no efficient chemical solution has been successfully developed for multicrystalline silicon wafers. Thus, the use of alternative new methods for effective texturization of multicrystalline silicon is worth to be investigated. One of the promising texturing techniques of multicrystalline silicon wafers is the use of mechanical grooves. However, most often, physical damages occur during mechanical grooves of the wafer surface, which in turn require an additional step of wet processing-removal damage. Electrochemical surface treatment seems to be an adequate solution for removing mechanical damage throughout porous silicon formation. The topography of untreated and porous silicon-treated mechanically textured surface was investigated using scanning electron microscopy (SEM). As a result of the electrochemical surface treatment, the total reflectivity drops to about 5% in the 400-1000 nm wavelength range and the effective minority carrier diffusion length enhances from 190 {mu}m to about 230 {mu}m (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Laboratory course on silicon sensors

CERN Document Server

Crescio, E; Roe, S; Rudge, A

2003-01-01

The laboratory course consisted of four different mini sessions, in order to give the student some hands-on experience on various aspects of silicon sensors and related integrated electronics. The four experiments were. 1. Characterisation of silicon diodes for particle detection 2. Study of noise performance of the Viking readout circuit 3. Study of the position resolution of a silicon microstrip sensor 4. Study of charge transport in silicon with a fast amplifier The data in the following were obtained during the ICFA school by the students.

Application of hydrogen-plasma technology for property modification of silicon and producing the silicon-based structures

International Nuclear Information System (INIS)

Fedotov, A.K.; Mazanik, A.V.; Ul'yashin, A.G.; Dzhob, R; Farner, V.R.

2000-01-01

Effects of atomic hydrogen on the properties of Czochralski-grown single crystal silicon as well as polycrystalline shaped silicon have been investigated. It was established that the buried defect layers created by high-energy hydrogen or helium ion implantation act as a good getter centers for hydrogen atoms introduced in silicon in the process of hydrogen plasma hydrogenation. Atomic hydrogen was shown to be active as a catalyzer significantly enhancing the rate of thermal donors formation in p-type single crystal silicon. This effect can be used for n-p- and p-n-p-silicon based device structures producing [ru

Synthesis and Characterization of Mixed Chalcogen Triangular Complexes with New Mo-3(mu(3)-S)(mu(2)-Se-2)(3)(4+) and M-3(mu(3)-S)mu(2)-Se)(3)(4+) (M = Mo, W) Cluster Cores

DEFF Research Database (Denmark)

Gushchin, Artem; Ooi, Bee Lean; Harris, Pernille

2009-01-01

In our pursuit of mixed chalcogen-bridged cluster complexes, solids of the compositions Mo3SSe6Br4 and W3SSe6Br4 were prepared using high-temperature synthesis from the elements. Treatment of Mo3SSe6Br4 with Bu4NBr in a vibration mill yielded (Bu4N)(3)([Mo-3(mu(3)-S)(mu(2)-Se-2)(3)Br-6]Br} (I). Its......), was isolated and its structure determined using X-ray crystallography. W3SSe6Br4 upon reaction with H3PO2 gave a mixture of all of the [W3SxSe4-x(H2O)(9)](4+) species. After repeated chromatography, crystals of {[W-3(mu(3)-S)(mu(2)-Se)(3)(H2O)(7)Cl--(2)](2)CB[6]}Cl-4 center dot 12H(2)O (IV) were crystallized...

Silicon microfabricated beam expander

International Nuclear Information System (INIS)

Othman, A.; Ibrahim, M. N.; Hamzah, I. H.; Sulaiman, A. A.; Ain, M. F.

2015-01-01

The feasibility design and development methods of silicon microfabricated beam expander are described. Silicon bulk micromachining fabrication technology is used in producing features of the structure. A high-precision complex 3-D shape of the expander can be formed by exploiting the predictable anisotropic wet etching characteristics of single-crystal silicon in aqueous Potassium-Hydroxide (KOH) solution. The beam-expander consist of two elements, a micromachined silicon reflector chamber and micro-Fresnel zone plate. The micro-Fresnel element is patterned using lithographic methods. The reflector chamber element has a depth of 40 µm, a diameter of 15 mm and gold-coated surfaces. The impact on the depth, diameter of the chamber and absorption for improved performance are discussed

Silicon microfabricated beam expander

Energy Technology Data Exchange (ETDEWEB)

Othman, A., E-mail: aliman@ppinang.uitm.edu.my; Ibrahim, M. N.; Hamzah, I. H.; Sulaiman, A. A. [Faculty of Electrical Engineering, Universiti Teknologi MARA Malaysia, 40450, Shah Alam, Selangor (Malaysia); Ain, M. F. [School of Electrical and Electronic Engineering, Engineering Campus, Universiti Sains Malaysia, Seri Ampangan, 14300,Nibong Tebal, Pulau Pinang (Malaysia)

2015-03-30

The feasibility design and development methods of silicon microfabricated beam expander are described. Silicon bulk micromachining fabrication technology is used in producing features of the structure. A high-precision complex 3-D shape of the expander can be formed by exploiting the predictable anisotropic wet etching characteristics of single-crystal silicon in aqueous Potassium-Hydroxide (KOH) solution. The beam-expander consist of two elements, a micromachined silicon reflector chamber and micro-Fresnel zone plate. The micro-Fresnel element is patterned using lithographic methods. The reflector chamber element has a depth of 40 µm, a diameter of 15 mm and gold-coated surfaces. The impact on the depth, diameter of the chamber and absorption for improved performance are discussed.

Silicon Heterojunction Solar Cells Using AlOx and Plasma-Immersion Ion Implantation

Directory of Open Access Journals (Sweden)

Yu-Hsien Lin

2014-06-01

Full Text Available Aluminum oxide (AlOx and plasma immersion ion implantation (PIII were studied in relation to passivated silicon heterojunction solar cells. When aluminum oxide (AlOx was deposited on the surface of a wafer; the electric field near the surface of wafer was enhanced; and the mobility of the carrier was improved; thus reducing carrier traps associated with dangling bonds. Using PIII enabled implanting nitrogen into the device to reduce dangling bonds and achieve the desired passivation effect. Depositing AlOx on the surface of a solar cell increased the short-circuit current density (Jsc; open-circuit voltage (Voc; and conversion efficiency from 27.84 mA/cm2; 0.52 V; and 8.97% to 29.34 mA/cm2; 0.54 V; and 9.68%; respectively. After controlling the depth and concentration of nitrogen by modulating the PIII energy; the ideal PIII condition was determined to be 2 keV and 10 min. As a result; a 15.42% conversion efficiency was thus achieved; and the Jsc; Voc; and fill factor were 37.78 mA/cm2; 0.55 V; and 0.742; respectively.

Using silicon nanostructures for the improvement of silicon solar cells' efficiency

International Nuclear Information System (INIS)

Torre, J. de la; Bremond, G.; Lemiti, M.; Guillot, G.; Mur, P.; Buffet, N.

2006-01-01

Silicon nanostructures (ns-Si) show interesting optical and electrical properties as a result of the band gap widening caused by quantum confinement effects. Along with their potential utilization for silicon-based light emitters' fabrication, they could also represent an appealing option for the improvement of energy conversion efficiency in silicon-based solar cells whether by using their luminescence properties (photon down-conversion) or the excess photocurrent produced by an improved high-energy photon's absorption. In this work, we report on the morphological and optical studies of non-stoichiometric silica (SiO x ) and silicon nitride (SiN x ) layers containing silicon nanostructures (ns-Si) in view of their application for solar cell's efficiency improvement. The morphological studies of the samples performed by transmission electron microscopy (TEM) unambiguously show the presence of ns-Si in a crystalline form for high temperature-annealed SiO x layers and for low temperature deposition of SiN x layers. The photoluminescence emission (PL) shows a rather high efficiency in both kind of layers with an intensity of only a factor ∼ 100 lower than that of porous silicon (pi-Si). The photocurrent spectroscopy (PC) shows a significant increase of absorption at high photon energy excitation most probably related to photon absorption within ns-Si quantized states. Moreover, the absorption characteristics obtained from PC spectra show a good agreement with the PL emission states unambiguously demonstrating a same origin, related to Q-confined excitons within ns-Si. Finally, the major asset of this material is the possibility to incorporate it to solar cells manufacturing processing for an insignificant cost

Silicon processing for photovoltaics II

CERN Document Server

Khattak, CP

2012-01-01

The processing of semiconductor silicon for manufacturing low cost photovoltaic products has been a field of increasing activity over the past decade and a number of papers have been published in the technical literature. This volume presents comprehensive, in-depth reviews on some of the key technologies developed for processing silicon for photovoltaic applications. It is complementary to Volume 5 in this series and together they provide the only collection of reviews in silicon photovoltaics available.The volume contains papers on: the effect of introducing grain boundaries in silicon; the

Nano-ridge fabrication by local oxidation of silicon edges with silicon nitride as a mask

NARCIS (Netherlands)

Haneveld, J.; Berenschot, Johan W.; Maury, P.A.; Jansen, Henricus V.

2005-01-01

A method to fabricate nano-ridges over a full wafer is presented. The fabrication method uses local oxidation of silicon, with silicon nitride as a mask, and wet anisotropic etching of silicon. The realized structures are 7-20 nm wide, 40-100 nm high and centimeters long. All dimensions are easily

[Effects of reduced nitrogen application and soybean intercropping on nitrogen balance of sugarcane field].

Science.gov (United States)

Liu, Yu; Zhang, Ying; Yang, Wen-ting; Li, Zhi-xian; Guan, Ao-mei

2015-03-01

A four-year (2010-2013) field experiment was carried out to explore the effects of three planting patterns (sugarcane, soybean monoculture and sugarcane-soybean 1:2 intercropping) with two nitrogen input levels (300 and 525 kg . hm-2) on soybean nitrogen fixation, sugarcane and soybean nitrogen accumulation, and ammonia volatilization and nitrogen leaching in sugarcane field. The results showed that the soybean nitrogen fixation efficiency (NFE) of sugarcane-soybean inter-cropping was lower than that of soybean monoculture. There was no significant difference in NFE among the treatments with the two nitrogen application rates. The nitrogen application rate and inter-cropping did not remarkably affect nitrogen accumulation of sugarcane and soybean. The ammonia volatilization of the reduced nitrogen input treatment was significantly lower than that of the conventional nitrogen input treatment. Furthermore, there was no significant difference in nitrogen leaching at different nitrogen input levels and among different planting patterns. The sugarcane field nitrogen balance analysis indicated that the nitrogen application rate dominated the nitrogen budget of sugarcane field. During the four-year experiment, all treatments leaved a nitrogen surplus (from 73.10 to 400.03 kg . hm-2) , except a nitrogen deficit of 66.22 kg . hm-2 in 2011 in the treatment of sugarcane monoculture with the reduced nitrogen application. The excessive nitrogen surplus might increase the risk of nitrogen pollution in the field. In conclusion, sugarcane-soybean intercropping with reduced nitrogen application is feasible to practice in consideration of enriching the soil fertility, reducing nitrogen pollution and saving production cost in sugarcane field.

Silicon nanowire hybrid photovoltaics

KAUST Repository

Garnett, Erik C.

2010-06-01

Silicon nanowire Schottky junction solar cells have been fabricated using n-type silicon nanowire arrays and a spin-coated conductive polymer (PEDOT). The polymer Schottky junction cells show superior surface passivation and open-circuit voltages compared to standard diffused junction cells with native oxide surfaces. External quantum efficiencies up to 88% were measured for these silicon nanowire/PEDOT solar cells further demonstrating excellent surface passivation. This process avoids high temperature processes which allows for low-cost substrates to be used. © 2010 IEEE.

Silicon nanowire hybrid photovoltaics

KAUST Repository

Garnett, Erik C.; Peters, Craig; Brongersma, Mark; Cui, Yi; McGehee, Mike

2010-01-01

Silicon nanowire Schottky junction solar cells have been fabricated using n-type silicon nanowire arrays and a spin-coated conductive polymer (PEDOT). The polymer Schottky junction cells show superior surface passivation and open-circuit voltages compared to standard diffused junction cells with native oxide surfaces. External quantum efficiencies up to 88% were measured for these silicon nanowire/PEDOT solar cells further demonstrating excellent surface passivation. This process avoids high temperature processes which allows for low-cost substrates to be used. © 2010 IEEE.

Design and Fabrication of Silicon-on-Silicon-Carbide Substrates and Power Devices for Space Applications

Directory of Open Access Journals (Sweden)

Gammon P.M.

2017-01-01

Full Text Available A new generation of power electronic semiconductor devices are being developed for the benefit of space and terrestrial harsh-environment applications. 200-600 V lateral transistors and diodes are being fabricated in a thin layer of silicon (Si wafer bonded to silicon carbide (SiC. This novel silicon-on-silicon-carbide (Si/SiC substrate solution promises to combine the benefits of silicon-on-insulator (SOI technology (i.e device confinement, radiation tolerance, high and low temperature performance with that of SiC (i.e. high thermal conductivity, radiation hardness, high temperature performance. Details of a process are given that produces thin films of silicon 1, 2 and 5 μm thick on semi-insulating 4H-SiC. Simulations of the hybrid Si/SiC substrate show that the high thermal conductivity of the SiC offers a junction-to-case temperature ca. 4× less that an equivalent SOI device; reducing the effects of self-heating, and allowing much greater power density. Extensive electrical simulations are used to optimise a 600 V laterally diffused metal-oxide-semiconductor field-effect transistor (LDMOSFET implemented entirely within the silicon thin film, and highlight the differences between Si/SiC and SOI solutions.

Silicon oxide nanoimprint stamp fabrication by edge lithography reinforced with silicon nitride

NARCIS (Netherlands)

Zhao, Yiping; Berenschot, Johan W.; de Boer, Meint J.; Jansen, Henricus V.; Tas, Niels Roelof; Huskens, Jurriaan; Elwenspoek, Michael Curt

2007-01-01

The fabrication of silicon oxide nanoimprint stamp employing edge lithography in combination with silicon nitride deposition is presented. The fabrication process is based on conventional photolithography an weg etching methods. Nanoridges with width dimension of sub-20 nm were fabricated by edge

Amorphous silicon rich silicon nitride optical waveguides for high density integrated optics

DEFF Research Database (Denmark)

Philipp, Hugh T.; Andersen, Karin Nordström; Svendsen, Winnie Edith

2004-01-01

Amorphous silicon rich silicon nitride optical waveguides clad in silica are presented as a high-index contrast platform for high density integrated optics. Performance of different cross-sectional geometries have been measured and are presented with regards to bending loss and insertion loss...

Process for forming a porous silicon member in a crystalline silicon member

Science.gov (United States)

Northrup, M. Allen; Yu, Conrad M.; Raley, Norman F.

1999-01-01

Fabrication and use of porous silicon structures to increase surface area of heated reaction chambers, electrophoresis devices, and thermopneumatic sensor-actuators, chemical preconcentrates, and filtering or control flow devices. In particular, such high surface area or specific pore size porous silicon structures will be useful in significantly augmenting the adsorption, vaporization, desorption, condensation and flow of liquids and gasses in applications that use such processes on a miniature scale. Examples that will benefit from a high surface area, porous silicon structure include sample preconcentrators that are designed to adsorb and subsequently desorb specific chemical species from a sample background; chemical reaction chambers with enhanced surface reaction rates; and sensor-actuator chamber devices with increased pressure for thermopneumatic actuation of integrated membranes. Examples that benefit from specific pore sized porous silicon are chemical/biological filters and thermally-activated flow devices with active or adjacent surfaces such as electrodes or heaters.

Hybrid Integrated Platforms for Silicon Photonics

Science.gov (United States)

Liang, Di; Roelkens, Gunther; Baets, Roel; Bowers, John E.

2010-01-01

A review of recent progress in hybrid integrated platforms for silicon photonics is presented. Integration of III-V semiconductors onto silicon-on-insulator substrates based on two different bonding techniques is compared, one comprising only inorganic materials, the other technique using an organic bonding agent. Issues such as bonding process and mechanism, bonding strength, uniformity, wafer surface requirement, and stress distribution are studied in detail. The application in silicon photonics to realize high-performance active and passive photonic devices on low-cost silicon wafers is discussed. Hybrid integration is believed to be a promising technology in a variety of applications of silicon photonics.

Impurity engineering of Czochralski silicon used for ultra large-scaled-integrated circuits

Science.gov (United States)

Yang, Deren; Chen, Jiahe; Ma, Xiangyang; Que, Duanlin

2009-01-01

Impurities in Czochralski silicon (Cz-Si) used for ultra large-scaled-integrated (ULSI) circuits have been believed to deteriorate the performance of devices. In this paper, a review of the recent processes from our investigation on internal gettering in Cz-Si wafers which were doped with nitrogen, germanium and/or high content of carbon is presented. It has been suggested that those impurities enhance oxygen precipitation, and create both denser bulk microdefects and enough denuded zone with the desirable width, which is benefit of the internal gettering of metal contamination. Based on the experimental facts, a potential mechanism of impurity doping on the internal gettering structure is interpreted and, a new concept of 'impurity engineering' for Cz-Si used for ULSI is proposed.

Ultrafast Terahertz Conductivity of Photoexcited Nanocrystalline Silicon

DEFF Research Database (Denmark)

Cooke, David; MacDonald, A. Nicole; Hryciw, Aaron

2007-01-01

The ultrafast transient ac conductivity of nanocrystalline silicon films is investigated using time-resolved terahertz spectroscopy. While epitaxial silicon on sapphire exhibits a free carrier Drude response, silicon nanocrystals embedded in glass show a response that is best described by a class...... in the silicon nanocrystal films is dominated by trapping at the Si/SiO2 interface states, occurring on a 1–100 ps time scale depending on particle size and hydrogen passivation......The ultrafast transient ac conductivity of nanocrystalline silicon films is investigated using time-resolved terahertz spectroscopy. While epitaxial silicon on sapphire exhibits a free carrier Drude response, silicon nanocrystals embedded in glass show a response that is best described...

Epitaxial growth of silicon for layer transfer

Science.gov (United States)

Teplin, Charles; Branz, Howard M

2015-03-24

Methods of preparing a thin crystalline silicon film for transfer and devices utilizing a transferred crystalline silicon film are disclosed. The methods include preparing a silicon growth substrate which has an interface defining substance associated with an exterior surface. The methods further include depositing an epitaxial layer of silicon on the silicon growth substrate at the surface and separating the epitaxial layer from the substrate substantially along the plane or other surface defined by the interface defining substance. The epitaxial layer may be utilized as a thin film of crystalline silicon in any type of semiconductor device which requires a crystalline silicon layer. In use, the epitaxial transfer layer may be associated with a secondary substrate.

Behavior of Particle Depots in Molten Silicon During Float-Zone Growth in Strong Static Magnetic Fields

Science.gov (United States)

Jauss, T.; SorgenFrei, T.; Croell, A.; Azizi, M.; Reimann, C.; Friedrich, J.; Volz, M. P.

2014-01-01

In the photovoltaics industry, the largest market share is represented by solar cells made from multicrystalline silicon, which is grown by directional solidification. During the growth process, the silicon melt is in contact with the silicon nitride coated crucible walls and the furnace atmosphere which contains carbon monoxide. The dissolution of the crucible coating, the carbon bearing gas, and the carbon already present in the feedstock, lead to the precipitation of silicon carbide, and silicon nitride, at later stages of the growth process. The precipitation of Si3N4 and SiC particles of up to several hundred micrometers in diameter leads to severe problems during the wire sawing process for wafering the ingots. Furthermore the growth of the silicon grains can be negatively influenced by the presence of particles, which act as nucleation sources and lead to a grit structure of small grains and are sources for dislocations. If doped with Nitrogen from the dissolved crucible coating, SiC is a semi conductive material, and can act as a shunt, short circuiting parts of the solar cell. For these reasons, the incorporation of such particles needs to be avoided. In this contribution we performed model experiments in which the transport of intentionally added SiC particles and their interaction with the solid-liquid interface during float zone growth of silicon in strong steady magnetic fields was investigated. SiC particles of 7µm and 60µm size are placed in single crystal silicon [100] and [111] rods of 8mm diameter. This is achieved by drilling a hole of 2mm diameter, filling in the particles and closing the hole by melting the surface of the rod until a film of silicon covers the hole. The samples are processed under a vacuum of 1x10(exp -5) mbar or better, to prevent gas inclusions. An oxide layer to suppress Marangoni convection is applied by wet oxidation. Experiments without and with static magnetic field are carried out to investigate the influence of melt

Silicon nanowire-based solar cells

Energy Technology Data Exchange (ETDEWEB)

Stelzner, Th; Pietsch, M; Andrae, G; Falk, F; Ose, E; Christiansen, S [Institute of Photonic Technology, Albert-Einstein-Strasse 9, D-07745 Jena (Germany)], E-mail: thomas.stelzner@ipht-jena.de

2008-07-23

The fabrication of silicon nanowire-based solar cells on silicon wafers and on multicrystalline silicon thin films on glass is described. The nanowires show a strong broadband optical absorption, which makes them an interesting candidate to serve as an absorber in solar cells. The operation of a solar cell is demonstrated with n-doped nanowires grown on a p-doped silicon wafer. From a partially illuminated area of 0.6 cm{sup 2} open-circuit voltages in the range of 230-280 mV and a short-circuit current density of 2 mA cm{sup -2} were obtained.

Silicon nanowire-based solar cells

International Nuclear Information System (INIS)

Stelzner, Th; Pietsch, M; Andrae, G; Falk, F; Ose, E; Christiansen, S

2008-01-01

The fabrication of silicon nanowire-based solar cells on silicon wafers and on multicrystalline silicon thin films on glass is described. The nanowires show a strong broadband optical absorption, which makes them an interesting candidate to serve as an absorber in solar cells. The operation of a solar cell is demonstrated with n-doped nanowires grown on a p-doped silicon wafer. From a partially illuminated area of 0.6 cm 2 open-circuit voltages in the range of 230-280 mV and a short-circuit current density of 2 mA cm -2 were obtained

Silicon Qubits

Energy Technology Data Exchange (ETDEWEB)

Ladd, Thaddeus D. [HRL Laboratories, LLC, Malibu, CA (United States); Carroll, Malcolm S. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

2018-02-28

Silicon is a promising material candidate for qubits due to the combination of worldwide infrastructure in silicon microelectronics fabrication and the capability to drastically reduce decohering noise channels via chemical purification and isotopic enhancement. However, a variety of challenges in fabrication, control, and measurement leaves unclear the best strategy for fully realizing this material’s future potential. In this article, we survey three basic qubit types: those based on substitutional donors, on metal-oxide-semiconductor (MOS) structures, and on Si/SiGe heterostructures. We also discuss the multiple schema used to define and control Si qubits, which may exploit the manipulation and detection of a single electron charge, the state of a single electron spin, or the collective states of multiple spins. Far from being comprehensive, this article provides a brief orientation to the rapidly evolving field of silicon qubit technology and is intended as an approachable entry point for a researcher new to this field.

Foliage nitrogen turnover: differences among nitrogen absorbed at different times by Quercus serrata saplings

Science.gov (United States)

Ueda, Miki U.; Mizumachi, Eri; Tokuchi, Naoko

2011-01-01

Background and Aims Nitrogen turnover within plants has been intensively studied to better understand nitrogen use strategies. However, differences among the nitrogen absorbed at different times are not completely understood and the fate of nitrogen absorbed during winter is largely uncharacterized. In the present study, nitrogen absorbed at different times of the year (growing season, winter and previous growing season) was traced, and the within-leaf nitrogen turnover of a temperate deciduous oak Quercus serrata was investigated. Methods The contributions of nitrogen absorbed at the three different times to leaf construction, translocation during the growing season, and the leaf-level resorption efficiency during leaf senescence were compared using 15N. Key Results Winter- and previous growing season-absorbed nitrogen significantly contributed to leaf construction, although the contribution was smaller than that of growing season-absorbed nitrogen. On the other hand, the leaf-level resorption efficiency of winter- and previous growing season-absorbed nitrogen was higher than that of growing season-absorbed nitrogen, suggesting that older nitrogen is better retained in leaves than recently absorbed nitrogen. Conclusions The results demonstrate that nitrogen turnover in leaves varies with nitrogen absorption times. These findings are important for understanding plant nitrogen use strategies and nitrogen cycles in forest ecosystems. PMID:21515608

Study of Silicon Microstrip Detector Properties for the LHCb Silicon Tracker

CERN Document Server

Lois-Gómez, C; Vázquez-Regueiro, P

2006-01-01

The LHCb experiment, at present under construction at the Large Hadron Collider at CERN, has been designed to perform high-precision measurements of CP violating phenomena and rare decays in the B meson systems. The need of a good tracking performance and the high density of particles close to the beam pipe lead to the use of silicon microstrip detectors in a significant part of the LHCb tracking system. The Silicon Tracker (ST) will be built using p-on-n silicon detectors with strip pitches of approximately 200 $\\mu$m and readout strips up to 38 cm in length. This thesis describes the tests carried out on silicon microstrip detectors for the ST, starting from the characterization of different prototypes up to the final tests on the detectors that are being installed at CERN. The results can be divided in three main blocks. The first part comprises an exhaustive characterization of several prototype sensors selected as suitable candidates for the detector and was performed in order to decide some design param...

Marine nitrogen cycle

Digital Repository Service at National Institute of Oceanography (India)

Naqvi, S.W.A.

) such as the Marine nitrogen cycle The marine nitrogen cycle. ‘X’ and ‘Y’ are intra-cellular intermediates that do not accumulate in water column. (Source: Codispoti et al., 2001) Page 1 of 3Marine nitrogen cycle - Encyclopedia of Earth 11/20/2006http://www... and nitrous oxide budgets: Moving targets as we enter the anthropocene?, Sci. Mar., 65, 85-105, 2001. Page 2 of 3Marine nitrogen cycle - Encyclopedia of Earth 11/20/2006http://www.eoearth.org/article/Marine_nitrogen_cycle square6 Gruber, N.: The dynamics...

Apparatus for making molten silicon

Science.gov (United States)

Levin, Harry (Inventor)

1988-01-01

A reactor apparatus (10) adapted for continuously producing molten, solar grade purity elemental silicon by thermal reaction of a suitable precursor gas, such as silane (SiH.sub.4), is disclosed. The reactor apparatus (10) includes an elongated reactor body (32) having graphite or carbon walls which are heated to a temperature exceeding the melting temperature of silicon. The precursor gas enters the reactor body (32) through an efficiently cooled inlet tube assembly (22) and a relatively thin carbon or graphite septum (44). The septum (44), being in contact on one side with the cooled inlet (22) and the heated interior of the reactor (32) on the other side, provides a sharp temperature gradient for the precursor gas entering the reactor (32) and renders the operation of the inlet tube assembly (22) substantially free of clogging. The precursor gas flows in the reactor (32) in a substantially smooth, substantially axial manner. Liquid silicon formed in the initial stages of the thermal reaction reacts with the graphite or carbon walls to provide a silicon carbide coating on the walls. The silicon carbide coated reactor is highly adapted for prolonged use for production of highly pure solar grade silicon. Liquid silicon (20) produced in the reactor apparatus (10) may be used directly in a Czochralski or other crystal shaping equipment.

Hole Injection at the Silicon/Aqueous Electrolyte Interface: A Possible Mechanism for Chemiluminescence from Porous Silicon

NARCIS (Netherlands)

Kooij, Ernst S.; Butter, K.; Kelly, J.J.

1998-01-01

The reduction mechanism of oxidizing agents at silicon and porous silicon electrodes has been investigated in relation to light emission from the porous semiconductor. Oxidizing agents with a positive redox potential are shown to inject holes into HF-pretreated silicon. However, as the degree of

Tailoring the optical constants in single-crystal silicon with embedded silver nanostructures for advanced silicon photonics applications

International Nuclear Information System (INIS)

Akhter, Perveen; Huang, Mengbing; Spratt, William; Kadakia, Nirag; Amir, Faisal

2015-01-01

Plasmonic effects associated with metal nanostructures are expected to hold the key to tailoring light emission/propagation and harvesting solar energy in materials including single crystal silicon which remains the backbone in the microelectronics and photovoltaics industries but unfortunately, lacks many functionalities needed for construction of advanced photonic and optoelectronics devices. Currently, silicon plasmonic structures are practically possible only in the configuration with metal nanoparticles or thin film arrays on a silicon surface. This does not enable one to exploit the full potential of plasmonics for optical engineering in silicon, because the plasmonic effects are dominant over a length of ∼50 nm, and the active device region typically lies below the surface much beyond this range. Here, we report on a novel method for the formation of silver nanoparticles embedded within a silicon crystal through metal gettering from a silver thin film deposited at the surface to nanocavities within the Si created by hydrogen ion implantation. The refractive index of the Ag-nanostructured layer is found to be 3–10% lower or higher than that of silicon for wavelengths below or beyond ∼815–900 nm, respectively. Around this wavelength range, the optical extinction values increase by a factor of 10–100 as opposed to the pure silicon case. Increasing the amount of gettered silver leads to an increased extinction as well as a redshift in wavelength position for the resonance. This resonance is attributed to the surface plasmon excitation of the resultant silver nanoparticles in silicon. Additionally, we show that the profiles for optical constants in silicon can be tailored by varying the position and number of nanocavity layers. Such silicon crystals with embedded metal nanostructures would offer novel functional base structures for applications in silicon photonics, optoelectronics, photovoltaics, and plasmonics

Growth and characterization of thick cBN coatings on silicon and tool substrates

International Nuclear Information System (INIS)

Bewilogua, K.; Keunecke, M.; Weigel, K.; Wiemann, E.

2004-01-01

Recently some research groups have achieved progress in the deposition of cubic boron nitride (cBN) coatings with a thickness of 2 μm and more, which is necessary for cutting tool applications. In our laboratory, thick cBN coatings were sputter deposited on silicon substrates using a boron carbide target. Following a boron carbide interlayer (few 100 nm thick), a gradient layer with continuously increasing nitrogen content was prepared. After the cBN nucleation, the process parameters were modified for the cBN film growth to a thickness of more than 2 μm. However, the transfer of this technology to technically relevant substrates, like cemented carbide cutting inserts, required some further process modifications. At first, a titanium interlayer had to be deposited followed by a more than 1-μm-thick boron carbide layer. The next steps were identical to those on silicon substrates. The total coating thickness was in the range of 3 μm with a 0.5- to nearly 1-μm-thick cBN top layer. In spite of the enormous intrinsic stress, both the coatings on silicon and on cemented carbide exhibited a good adhesion and a prolonged stability in humid air. Oxidation experiments revealed a stability of the coating system on cemented carbide up to 700 deg. C and higher. Coated cutting inserts were tested in turning operations with different metallic workpiece materials. The test results will be compared to those of well-established cutting materials, like polycrystalline cubic boron nitride (PCBN) and oxide ceramics, considering the wear of coated tools

Oxidation effects on the mechanical properties of SiC fiber-reinforced reaction-bonded silicon nitride matrix composites

Science.gov (United States)

Bhatt, Ramakrishna T.

1989-01-01

The room temperature mechanical properties of SiC fiber reinforced reaction bonded silicon nitride composites were measured after 100 hrs exposure at temperatures to 1400 C in nitrogen and oxygen environments. The composites consisted of approx. 30 vol percent uniaxially aligned 142 micron diameter SiC fibers in a reaction bonded Si3N4 matrix. The results indicate that composites heat treated in a nitrogen environment at temperatures to 1400 C showed deformation and fracture behavior equivalent to that of the as-fabricated composites. Also, the composites heat treated in an oxidizing environment beyond 400 C yielded significantly lower tensile strength values. Specifically in the temperature range from 600 to 1000 C, composites retained approx. 40 percent of their as-fabricated strength, and those heat treated in the temperatures from 1200 to 1400 C retained 70 percent. Nonetheless, for all oxygen heat treatment conditions, composite specimens displayed strain capability beyond the matrix fracture stress; a typical behavior of a tough composite.

Advances in silicon nanophotonics

DEFF Research Database (Denmark)

Hvam, Jørn Märcher; Pu, Minhao

Silicon has long been established as an ideal material for passive integrated optical circuitry due to its high refractive index, with corresponding strong optical confinement ability, and its low-cost CMOS-compatible manufacturability. However, the inversion symmetry of the silicon crystal lattice.......g. in high-bit-rate optical communication circuits and networks, it is vital that the nonlinear optical effects of silicon are being strongly enhanced. This can among others be achieved in photonic-crystal slow-light waveguides and in nano-engineered photonic-wires (Fig. 1). In this talk I shall present some...... recent advances in this direction. The efficient coupling of light between optical fibers and the planar silicon devices and circuits is of crucial importance. Both end-coupling (Fig. 1) and grating-coupling solutions will be discussed along with polarization issues. A new scheme for a hybrid III...

Effects of nitrogen applocation on yield and nitrogen accumulation in soybean

International Nuclear Information System (INIS)

Di Wei; Jin Xijun; Ma Chunmei; Dong Shoukun; Gong Zhenping; Zhang Lei

2010-01-01

Methods of sand cultre and 15 N tracing were used to study the effects of nitrogen application on yield and nitrogen accumulation in soybean variety SN 14 . The results showed as follows: accumulated nitrogen in the whole plant, petiole, pod shell and seed increased at the beginning and then decreased with the increase of nitrogen levels; Nitrogen accumulation in leaf and stem increased in 3 and 5 times for N 150 than that of N 0 , which indicated that high nitrogen levels promoted the nitrogen accumulation in leaf and stem, however compared with N 0 , nitrogen accumulation in root, Nodulation-N accumulated in the whole plant and seed of N 150 decreased by 60.3%, 74. 9% and 85.7% respectively, and Fertilizer-N harvest index of N 150 decreased, which was 19.8% lower than that of N 50 , as well as Nodulation-N harvest index 25.5% lower than that of N 50 . The nitrogen levels of soybean yield also firstly increased and then decreased; Compared with N 0 , plant height, pod height and lowest pod nodes of soybean treated with N 150 increased by 55.2%, 199.7% and 142.9% respectively, while no effects were found on node number. (authors)

Nitrogen and Oxygen Isotopic Studies of the Marine Nitrogen Cycle.

Science.gov (United States)

Casciotti, Karen L

2016-01-01

The marine nitrogen cycle is a complex web of microbially mediated reactions that control the inventory, distribution, and speciation of nitrogen in the marine environment. Because nitrogen is a major nutrient that is required by all life, its availability can control biological productivity and ecosystem structure in both surface and deep-ocean communities. Stable isotopes of nitrogen and oxygen in nitrate and nitrite have provided new insights into the rates and distributions of marine nitrogen cycle processes, especially when analyzed in combination with numerical simulations of ocean circulation and biogeochemistry. This review highlights the insights gained from dual-isotope studies applied at regional to global scales and their incorporation into oceanic biogeochemical models. These studies represent significant new advances in the use of isotopic measurements to understand the modern nitrogen cycle, with implications for the study of past ocean productivity, oxygenation, and nutrient status.

Phosphorus-doped Amorphous Silicon Nitride Films Applied to Crystalline Silicon Solar Cells

NARCIS (Netherlands)

Feinäugle, Matthias

2008-01-01

The Photovoltaics Group at the Universitat Politècnica de Catalunya is investigating silicon carbide (SiC) for the electronic passivation of the surface of crystalline silicon solar cells. The doping of SiC passivation layers with phosphorus resulted in a clear improvement of the minority carrier

Synthesis of Novel Reactive Disperse Silicon-Containing Dyes and Their Coloring Properties on Silicone Rubbers

Directory of Open Access Journals (Sweden)

Ning Yu

2018-01-01

Full Text Available Novel red and purple reactive disperse silicon-containing dyes were designed and synthesized using p-nitroaniline and 6-bromo-2,4-dinitro-aniline as diazonium components, the first condensation product of cyanuric chloride and 3-(N,N-diethylamino-aniline as coupling component, and 3-aminopropylmethoxydimethylsilane, 3-aminopropylmethyldimethoxysilane, and 3-aminopropyltrimethoxysilane as silicone reactive agents. These dyes were characterized by UV-Vis, 1H-NMR, FT-IR, and MS. The obtained reactive disperse silicon-containing dyes were used to color silicone rubbers and the color fastness of the dyes were evaluated. The dry/wet rubbing and washing fastnesses of these dyes all reached 4–5 grade and the sublimation fastness was also above 4 grade, indicating outstanding performance in terms of color fastness. Such colored silicone rubbers showed bright and rich colors without affecting its static mechanical properties.

"Silicon millefeuille": From a silicon wafer to multiple thin crystalline films in a single step

Science.gov (United States)

Hernández, David; Trifonov, Trifon; Garín, Moisés; Alcubilla, Ramon

2013-04-01

During the last years, many techniques have been developed to obtain thin crystalline films from commercial silicon ingots. Large market applications are foreseen in the photovoltaic field, where important cost reductions are predicted, and also in advanced microelectronics technologies as three-dimensional integration, system on foil, or silicon interposers [Dross et al., Prog. Photovoltaics 20, 770-784 (2012); R. Brendel, Thin Film Crystalline Silicon Solar Cells (Wiley-VCH, Weinheim, Germany 2003); J. N. Burghartz, Ultra-Thin Chip Technology and Applications (Springer Science + Business Media, NY, USA, 2010)]. Existing methods produce "one at a time" silicon layers, once one thin film is obtained, the complete process is repeated to obtain the next layer. Here, we describe a technology that, from a single crystalline silicon wafer, produces a large number of crystalline films with controlled thickness in a single technological step.

Silicon integrated circuit process

International Nuclear Information System (INIS)

Lee, Jong Duck

1985-12-01

This book introduces the process of silicon integrated circuit. It is composed of seven parts, which are oxidation process, diffusion process, ion implantation process such as ion implantation equipment, damage, annealing and influence on manufacture of integrated circuit and device, chemical vapor deposition process like silicon Epitaxy LPCVD and PECVD, photolithography process, including a sensitizer, spin, harden bake, reflection of light and problems related process, infrared light bake, wet-etch, dry etch, special etch and problems of etching, metal process like metal process like metal-silicon connection, aluminum process, credibility of aluminum and test process.

Silicon integrated circuit process

Energy Technology Data Exchange (ETDEWEB)

Lee, Jong Duck

1985-12-15

This book introduces the process of silicon integrated circuit. It is composed of seven parts, which are oxidation process, diffusion process, ion implantation process such as ion implantation equipment, damage, annealing and influence on manufacture of integrated circuit and device, chemical vapor deposition process like silicon Epitaxy LPCVD and PECVD, photolithography process, including a sensitizer, spin, harden bake, reflection of light and problems related process, infrared light bake, wet-etch, dry etch, special etch and problems of etching, metal process like metal process like metal-silicon connection, aluminum process, credibility of aluminum and test process.

Silicon micromachined vibrating gyroscopes

Science.gov (United States)

Voss, Ralf

1997-09-01

This work gives an overview of silicon micromachined vibrating gyroscopes. Market perspectives and fields of application are pointed out. The advantage of using silicon micromachining is discussed and estimations of the desired performance, especially for automobiles are given. The general principle of vibrating gyroscopes is explained. Vibrating silicon gyroscopes can be divided into seven classes. for each class the characteristic principle is presented and examples are given. Finally a specific sensor, based on a tuning fork for automotive applications with a sensitivity of 250(mu) V/degrees is described in detail.

Silicon containing copolymers

CERN Document Server

Amiri, Sahar; Amiri, Sanam

2014-01-01

Silicones have unique properties including thermal oxidative stability, low temperature flow, high compressibility, low surface tension, hydrophobicity and electric properties. These special properties have encouraged the exploration of alternative synthetic routes of well defined controlled microstructures of silicone copolymers, the subject of this Springer Brief. The authors explore the synthesis and characterization of notable block copolymers. Recent advances in controlled radical polymerization techniques leading to the facile synthesis of well-defined silicon based thermo reversible block copolymers?are described along with atom transfer radical polymerization (ATRP), a technique utilized to develop well-defined functional thermo reversible block copolymers. The brief also focuses on Polyrotaxanes and their great potential as stimulus-responsive materials which produce poly (dimethyl siloxane) (PDMS) based thermo reversible block copolymers.

Diamond deposition on siliconized stainless steel

International Nuclear Information System (INIS)

Alvarez, F.; Reinoso, M.; Huck, H.; Rosenbusch, M.

2010-01-01

Silicon diffusion layers in AISI 304 and AISI 316 type stainless steels were investigated as an alternative to surface barrier coatings for diamond film growth. Uniform 2 μm thick silicon rich interlayers were obtained by coating the surface of the steels with silicon and performing diffusion treatments at 800 deg. C. Adherent diamond films with low sp 2 carbon content were deposited on the diffused silicon layers by a modified hot filament assisted chemical vapor deposition (HFCVD) method. Characterization of as-siliconized layers and diamond coatings was performed by energy dispersive X-ray analysis, scanning electron microscopy, X-ray diffraction and Raman spectroscopy.

Transmutation doping of silicon solar cells

Science.gov (United States)

Wood, R. F.; Westbrook, R. D.; Young, R. T.; Cleland, J. W.

1977-01-01

Normal isotopic silicon contains 3.05% of Si-30 which transmutes to P-31 after thermal neutron absorption, with a half-life of 2.6 hours. This reaction is used to introduce extremely uniform concentrations of phosphorus into silicon, thus eliminating the areal and spatial inhomogeneities characteristic of chemical doping. Annealing of the lattice damage in the irradiated silicon does not alter the uniformity of dopant distribution. Transmutation doping also makes it possible to introduce phosphorus into polycrystalline silicon without segregation of the dopant at the grain boundaries. The use of neutron transmutation doped (NTD) silicon in solar cell research and development is discussed.

Hybrid Integrated Platforms for Silicon Photonics

Directory of Open Access Journals (Sweden)

John E. Bowers

2010-03-01

Full Text Available A review of recent progress in hybrid integrated platforms for silicon photonics is presented. Integration of III-V semiconductors onto silicon-on-insulator substrates based on two different bonding techniques is compared, one comprising only inorganic materials, the other technique using an organic bonding agent. Issues such as bonding process and mechanism, bonding strength, uniformity, wafer surface requirement, and stress distribution are studied in detail. The application in silicon photonics to realize high-performance active and passive photonic devices on low-cost silicon wafers is discussed. Hybrid integration is believed to be a promising technology in a variety of applications of silicon photonics.

Silicon on insulator self-aligned transistors

Science.gov (United States)

McCarthy, Anthony M.

2003-11-18

A method for fabricating thin-film single-crystal silicon-on-insulator (SOI) self-aligned transistors. Standard processing of silicon substrates is used to fabricate the transistors. Physical spaces, between the source and gate, and the drain and gate, introduced by etching the polysilicon gate material, are used to provide connecting implants (bridges) which allow the transistor to perform normally. After completion of the silicon substrate processing, the silicon wafer is bonded to an insulator (glass) substrate, and the silicon substrate is removed leaving the transistors on the insulator (glass) substrate. Transistors fabricated by this method may be utilized, for example, in flat panel displays, etc.

Creep analysis of silicone for podiatry applications.

Science.gov (United States)

Janeiro-Arocas, Julia; Tarrío-Saavedra, Javier; López-Beceiro, Jorge; Naya, Salvador; López-Canosa, Adrián; Heredia-García, Nicolás; Artiaga, Ramón

2016-10-01

This work shows an effective methodology to characterize the creep-recovery behavior of silicones before their application in podiatry. The aim is to characterize, model and compare the creep-recovery properties of different types of silicone used in podiatry orthotics. Creep-recovery phenomena of silicones used in podiatry orthotics is characterized by dynamic mechanical analysis (DMA). Silicones provided by Herbitas are compared by observing their viscoelastic properties by Functional Data Analysis (FDA) and nonlinear regression. The relationship between strain and time is modeled by fixed and mixed effects nonlinear regression to compare easily and intuitively podiatry silicones. Functional ANOVA and Kohlrausch-Willians-Watts (KWW) model with fixed and mixed effects allows us to compare different silicones observing the values of fitting parameters and their physical meaning. The differences between silicones are related to the variations of breadth of creep-recovery time distribution and instantaneous deformation-permanent strain. Nevertheless, the mean creep-relaxation time is the same for all the studied silicones. Silicones used in palliative orthoses have higher instantaneous deformation-permanent strain and narrower creep-recovery distribution. The proposed methodology based on DMA, FDA and nonlinear regression is an useful tool to characterize and choose the proper silicone for each podiatry application according to their viscoelastic properties. Copyright © 2016 Elsevier Ltd. All rights reserved.

Semiconducting silicon nanowires for biomedical applications

CERN Document Server

Coffer, JL

2014-01-01

Biomedical applications have benefited greatly from the increasing interest and research into semiconducting silicon nanowires. Semiconducting Silicon Nanowires for Biomedical Applications reviews the fabrication, properties, and applications of this emerging material. The book begins by reviewing the basics, as well as the growth, characterization, biocompatibility, and surface modification, of semiconducting silicon nanowires. It goes on to focus on silicon nanowires for tissue engineering and delivery applications, including cellular binding and internalization, orthopedic tissue scaffol

Synthesis of Silicon Nanocrystals in Microplasma Reactor

Science.gov (United States)

Nozaki, Tomohiro; Sasaki, Kenji; Ogino, Tomohisa; Asahi, Daisuke; Okazaki, Ken

Nanocrystalline silicon particles with a grain size of at least less than 10 nm are widely recognized as one of the key materials in optoelectronic devices, electrodes of lithium battery, bio-medical labels. There is also important character that silicon is safe material to the environment and easily gets involved in existing silicon technologies. To date, several synthesis methods such as sputtering, laser ablation, and plasma enhanced chemical vapor deposition (PECVD) based on low-pressure silane chemistry (SiH4) have been developed for precise control of size and density distributions of silicon nanocrystals. We explore the possibility of microplasma technologies for the efficient production of mono-dispersed nanocrystalline silicon particles in a micrometer-scale, continuous-flow plasma reactor operated at atmospheric pressure. Mixtures of argon, hydrogen, and silicon tetrachloride were activated using very high frequency (VHF = 144 MHz) power source in a capillary glass tube with a volume of less than 1 μ-liter. Fundamental plasma parameters of VHF capacitively coupled microplasma were characterized by optical emission spectroscopy, showing electron density of approximately 1015 cm-3 and rotational temperature of 1500 K, respectively. Such high-density non-thermal reactive plasma has a capability of decomposing silicon tetrachloride into atomic silicon to produce supersaturated atomic silicon vapor, followed by gas phase nucleation via three-body collision. The particle synthesis in high-density plasma media is beneficial for promoting nucleation process. In addition, further growth of silicon nuclei was able to be favorably terminated in a short-residence time reactor. Micro Raman scattering spectrum showed that as-deposited particles were mostly amorphous silicon with small fraction of silicon nanocrystals. Transmission electron micrograph confirmed individual silicon nanocrystals of 3-15 nm size. Although those particles were not mono-dispersed, they were

Amorphous silicon crystalline silicon heterojunction solar cells

CERN Document Server

Fahrner, Wolfgang Rainer

2013-01-01

Amorphous Silicon/Crystalline Silicon Solar Cells deals with some typical properties of heterojunction solar cells, such as their history, the properties and the challenges of the cells, some important measurement tools, some simulation programs and a brief survey of the state of the art, aiming to provide an initial framework in this field and serve as a ready reference for all those interested in the subject. This book helps to "fill in the blanks" on heterojunction solar cells. Readers will receive a comprehensive overview of the principles, structures, processing techniques and the current developmental states of the devices. Prof. Dr. Wolfgang R. Fahrner is a professor at the University of Hagen, Germany and Nanchang University, China.

Tightening the nitrogen cycle

OpenAIRE

Christensen, B.T.

2004-01-01

The availability of nitrogen to crop plants is a universally important aspect of soil quality, and often nitrogen represents the immediate limitation to crop productivity in modern agriculture. Nitrogen is decisive for the nutritive value of plant products and plays a key role in the environmental impact of agricultural production. The fundamental doctrine of nitrogen management is to optimise the nitrogen use efficiency of both introduced and native soil nitrogen by increasing the temporal a...

Strained silicon as a new electro-optic material

DEFF Research Database (Denmark)

Jacobsen, Rune Shim; Andersen, Karin Nordström; Borel, Peter Ingo

2006-01-01

For decades, silicon has been the material of choice for mass fabrication of electronics. This is in contrast to photonics, where passive optical components in silicon have only recently been realized1, 2. The slow progress within silicon optoelectronics, where electronic and optical...... functionalities can be integrated into monolithic components based on the versatile silicon platform, is due to the limited active optical properties of silicon3. Recently, however, a continuous-wave Raman silicon laser was demonstrated4; if an effective modulator could also be realized in silicon, data...... processing and transmission could potentially be performed by all-silicon electronic and optical components. Here we have discovered that a significant linear electro-optic effect is induced in silicon by breaking the crystal symmetry. The symmetry is broken by depositing a straining layer on top...

Biome-scale nitrogen fixation strategies selected by climatic constraints on nitrogen cycle.

Science.gov (United States)

Sheffer, Efrat; Batterman, Sarah A; Levin, Simon A; Hedin, Lars O

2015-11-23

Dinitrogen fixation by plants (in symbiosis with root bacteria) is a major source of new nitrogen for land ecosystems(1). A long-standing puzzle(2) is that trees capable of nitrogen fixation are abundant in nitrogen-rich tropical forests, but absent or restricted to early successional stages in nitrogen-poor extra-tropical forests. This biome-scale pattern presents an evolutionary paradox(3), given that the physiological cost(4) of nitrogen fixation predicts the opposite pattern: fixers should be out-competed by non-fixers in nitrogen-rich conditions, but competitively superior in nitrogen-poor soils. Here we evaluate whether this paradox can be explained by the existence of different fixation strategies in tropical versus extra-tropical trees: facultative fixers (capable of downregulating fixation(5,6) by sanctioning mutualistic bacteria(7)) are common in the tropics, whereas obligate fixers (less able to downregulate fixation) dominate at higher latitudes. Using a game-theoretic approach, we assess the ecological and evolutionary conditions under which these fixation strategies emerge, and examine their dependence on climate-driven differences in the nitrogen cycle. We show that in the tropics, transient soil nitrogen deficits following disturbance and rapid tree growth favour a facultative strategy and the coexistence of fixers and non-fixers. In contrast, sustained nitrogen deficits following disturbance in extra-tropical forests favour an obligate fixation strategy, and cause fixers to be excluded in late successional stages. We conclude that biome-scale differences in the abundance of nitrogen fixers can be explained by the interaction between individual plant strategies and climatic constraints on the nitrogen cycle over evolutionary time.

Nitrogen supply of crops by biological nitrogen fixation. 2

International Nuclear Information System (INIS)

Jensen, E.S.; Andersen, A.J.; Soerensen, H.; Thomsen, J.D.

1985-02-01

In the present work the contributions from combined N-sources and symbiotic nitrogen fixation to the nitrogen supply of field-grown peas and field beans were evaluated by means of 15 N fertilizer dilution. The effect of N-fertilizer, supplied at sowing and at different stages of plant development, on nitrogen fixation, yield and protein production in peas, was studied in pot experiments. (author)

Effect of Silicon Nanowire on Crystalline Silicon Solar Cell Characteristics

OpenAIRE

Zahra Ostadmahmoodi Do; Tahereh Fanaei Sheikholeslami; Hassan Azarkish

2016-01-01

Nanowires (NWs) are recently used in several sensor or actuator devices to improve their ordered characteristics. Silicon nanowire (Si NW) is one of the most attractive one-dimensional nanostructures semiconductors because of its unique electrical and optical properties. In this paper, silicon nanowire (Si NW), is synthesized and characterized for application in photovoltaic device. Si NWs are prepared using wet chemical etching method which is commonly used as a simple and low cost method fo...

Surface Effects in Segmented Silicon Sensors

OpenAIRE

Kopsalis, Ioannis

2017-01-01

Silicon detectors in Photon Science and Particle Physics require silicon sensors with very demanding specifications. New accelerators like the European X-ray Free Electron Laser (EuXFEL) and the High Luminosity upgrade of the Large Hadron Collider (HL-LHC), pose new challenges for silicon sensors, especially with respect to radiation hardness. High radiation doses and fluences damage the silicon crystal and the SiO2 layers at the surface, thus changing the sensor properties and limiting their...

Silicon photonics for multicore fiber communication

DEFF Research Database (Denmark)

Ding, Yunhong; Kamchevska, Valerija; Dalgaard, Kjeld

2016-01-01

We review our recent work on silicon photonics for multicore fiber communication, including multicore fiber fan-in/fan-out, multicore fiber switches towards reconfigurable optical add/drop multiplexers. We also present multicore fiber based quantum communication using silicon devices.......We review our recent work on silicon photonics for multicore fiber communication, including multicore fiber fan-in/fan-out, multicore fiber switches towards reconfigurable optical add/drop multiplexers. We also present multicore fiber based quantum communication using silicon devices....

Dephosphorization of Levitated Silicon-Iron Droplets for Production of Solar-Grade Silicon

Science.gov (United States)

Le, Katherine; Yang, Yindong; Barati, Mansoor; McLean, Alexander

2018-05-01

The treatment of relatively inexpensive silicon-iron alloys is a potential refining route in order to generate solar-grade silicon. Phosphorus is one of the more difficult impurity elements to remove by conventional processing. In this study, electromagnetic levitation was used to investigate phosphorus behavior in silicon-iron alloy droplets exposed to H2-Ar gas mixtures under various experimental conditions including, refining time, temperature (1723 K to 1993 K), gas flow rate, iron content, and initial phosphorus concentration in the alloy. Thermodynamic modeling of the dephosphorization reaction permitted prediction of the various gaseous products and indicated that diatomic phosphorus is the dominant species formed.

Signal development in irradiated silicon detectors

CERN Document Server

Kramberger, Gregor; Mikuz, Marko

2001-01-01

This work provides a detailed study of signal formation in silicon detectors, with the emphasis on detectors with high concentration of irradiation induced defects in the lattice. These defects give rise to deep energy levels in the band gap. As a consequence, the current induced by charge motion in silicon detectors is signifcantly altered. Within the framework of the study a new experimental method, Charge correction method, based on transient current technique (TCT) was proposed for determination of effective electron and hole trapping times in irradiated silicon detectors. Effective carrier trapping times were determined in numerous silicon pad detectors irradiated with neutrons, pions and protons. Studied detectors were fabricated on oxygenated and non-oxygenated silicon wafers with different bulk resistivities. Measured effective carrier trapping times were found to be inversely proportional to fuence and increase with temperature. No dependence on silicon resistivity and oxygen concentration was observ...

Ultra-fast silicon detectors

Energy Technology Data Exchange (ETDEWEB)

Sadrozinski, H. F.-W., E-mail: hartmut@scipp.ucsc.edu [Santa Cruz Institute for Particle Physics, UC Santa Cruz, Santa Cruz, CA 95064 (United States); Ely, S.; Fadeyev, V.; Galloway, Z.; Ngo, J.; Parker, C.; Petersen, B.; Seiden, A.; Zatserklyaniy, A. [Santa Cruz Institute for Particle Physics, UC Santa Cruz, Santa Cruz, CA 95064 (United States); Cartiglia, N.; Marchetto, F. [INFN Torino, Torino (Italy); Bruzzi, M.; Mori, R.; Scaringella, M.; Vinattieri, A. [University of Florence, Department of Physics and Astronomy, Sesto Fiorentino, Firenze (Italy)

2013-12-01

We propose to develop a fast, thin silicon sensor with gain capable to concurrently measure with high precision the space (∼10 μm) and time (∼10 ps) coordinates of a particle. This will open up new application of silicon detector systems in many fields. Our analysis of detector properties indicates that it is possible to improve the timing characteristics of silicon-based tracking sensors, which already have sufficient position resolution, to achieve four-dimensional high-precision measurements. The basic sensor characteristics and the expected performance are listed, the wide field of applications are mentioned and the required R and D topics are discussed. -- Highlights: •We are proposing thin pixel silicon sensors with 10's of picoseconds time resolution. •Fast charge collection is coupled with internal charge multiplication. •The truly 4-D sensors will revolutionize imaging and particle counting in many applications.

Exogenous trehalose improves growth under limiting nitrogen through upregulation of nitrogen metabolism.

Science.gov (United States)

Lin, Yingchao; Zhang, Jie; Gao, Weichang; Chen, Yi; Li, Hongxun; Lawlor, David W; Paul, Matthew J; Pan, Wenjie

2017-12-19

The trehalose (Tre) pathway has strong effects on growth and development in plants through regulation of carbon metabolism. Altering either Tre or trehalose 6-phosphate (T6P) can improve growth and productivity of plants as observed under different water availability. As yet, there are no reports of the effects of modification of Tre orT6P on plant performance under limiting nutrition. Here we report that nitrogen (N) metabolism is positively affected by exogenous application of Tre in nitrogen-deficient growing conditions. Spraying foliage of tobacco (Nicotiana tabacum) with trehalose partially alleviated symptoms of nitrogen deficiency through upregulation of nitrate and ammonia assimilation and increasing activities of nitrate reductase (NR), glycolate oxidase (GO), glutamine synthetase (GS) and glutamine oxoglutarate aminotransferase (GOGAT) with concomitant changes in ammonium (NH 4 + ) and nitrate (NO 3 - ) concentrations, glutamine and amino acids. Chlorophyll and total nitrogen content of leaves and rates of photosynthesis were increased compared to nitrogen-deficient plants without applied Tre. Total plant biomass accumulation was also higher in Tre -fed nitrogen-deficient plants, with a smaller proportion of dry weight partitioned to roots, compared to nitrogen-deficient plants without applied Tre. Consistent with higher nitrogen assimilation and growth, Tre application reduced foliar starch. Minimal effects of Tre feeding were observed on nitrogen-sufficient plants. The data show, for the first time, significant stimulatory effects of exogenous Tre on nitrogen metabolism and growth in plants growing under deficient nitrogen. Under such adverse conditions metabolism is regulated for survival rather than productivity. Application of Tre can alter this regulation towards maintenance of productive functions under low nitrogen. This has implications for considering approaches to modifying the Tre pathway for to improve crop nitrogen-use efficiency and

Crystallization induced of amorphous silicon by nickel

International Nuclear Information System (INIS)

Schmidt, J.A; Rinaldi, P; Budini, N; Arce, R; Buitrago, R.H

2008-01-01

Polycrystalline silicon (pc-Si) deposited on glass substrates is a very promising material for the production of different electronic devices, like thin film transistors, active matrices or solar cells. The crystallization of the amorphous silicon to obtain pc-Si can be achieved with different processes, among which nickel-induced crystallization is because it requires low concentrations of the metal and low annealing temperatures. Nucleation and growth of crystalline silicon are measured by the formation of silicide NiSi 2 , which has a lattice constant very similar to that of Si, and acts as a seed upon which crystalline grains can develop. The size of the pc-Si final grain depends on many factors, such as the initial concentration of Ni, the annealing time and temperature, and the presence of other atoms in the Si structure. This work presents a study on the influence of these parameters on the silicon crystallization process induced by Ni. We deposited a series of hydrogenated amorphous silicon samples (a-Si:H) on glass substrates, using the plasma-enhanced chemical vapor deposition method (PE-CVD) with silane gas (SiH 4 ). The deposition temperature was 200 o C, and we prepared intrinsic samples (i), lightly doped with boron (p), heavily doped with boron (p + ) and heavily doped with phosphorous (n + ). Each sample was divided into eight portions, depositing different concentrations of Ni into each one using the cathodic sputtering method. The concentration of Ni was determined by atomic adsorption spectroscopy, and included from 1.5 1 0 15 to 1.5 1 0 16 at/cm 2 . Later the samples were submitted to different thermal treatments in a circulating nitrogen atmosphere. In order to avoid violent dehydrogenation of the a-Si:H that damages the samples, the annealing was carried out gradually. In a first stage the samples were heated at a velocity of 0.5 o C /min up to 400 o C, holding them for 24 hrs at this temperature in order to reach hydrogen effusion. Heating

Relationship between silicon concentration and creatinine clearance

International Nuclear Information System (INIS)

Miura, Y.; Nakai, K.; Itoh, C.; Horikiri, J.; Sera, K.; Sato, M.

1998-01-01

Silicon levels in dialysis patients are markedly increasing. Using PIXE we determined the relationship between silicon concentration and creatinine clearance in 30 samples. Urine silicon concentration were significantly correlated to creatinine clearance (p<0.001). And also serum silicon concentration were significantly correlated to creatinine clearance (p<0.0001). (author)

The nitrogen cycle.

Science.gov (United States)

Stein, Lisa Y; Klotz, Martin G

2016-02-08

Nitrogen is the fourth most abundant element in cellular biomass, and it comprises the majority of Earth's atmosphere. The interchange between inert dinitrogen gas (N2) in the extant atmosphere and 'reactive nitrogen' (those nitrogen compounds that support, or are products of, cellular metabolism and growth) is entirely controlled by microbial activities. This was not the case, however, in the primordial atmosphere, when abiotic reactions likely played a significant role in the inter-transformation of nitrogen oxides. Although such abiotic reactions are still important, the extant nitrogen cycle is driven by reductive fixation of dinitrogen and an enzyme inventory that facilitates dinitrogen-producing reactions. Prior to the advent of the Haber-Bosch process (the industrial fixation of N2 into ammonia, NH3) in 1909, nearly all of the reactive nitrogen in the biosphere was generated and recycled by microorganisms. Although the Haber-Bosch process more than quadrupled the productivity of agricultural crops, chemical fertilizers and other anthropogenic sources of fixed nitrogen now far exceed natural contributions, leading to unprecedented environmental degradation. Copyright © 2016 Elsevier Ltd. All rights reserved.

Highly efficient silicon light emitting diode

NARCIS (Netherlands)

Le Minh, P.; Holleman, J.; Wallinga, Hans

2002-01-01

In this paper, we describe the fabrication, using standard silicon processing techniques, of silicon light-emitting diodes (LED) that efficiently emit photons with energy around the silicon bandgap. The improved efficiency had been explained by the spatial confinement of charge carriers due to a

Silicon-Based Nanoscale Composite Energetic Materials

Science.gov (United States)

2013-02-01

1193-1211. 9. Krishnamohan, G., E.M. Kurian, and H.R. Rao, Thermal Analysis and Inverse Burning Rate Studies on Silicon-Potassium Nitrate System...reported in a journal paper and appears in the Appendix. Multiscale Nanoporous Silicon Combustion Introduction for nanoporous silicon effort While

Hot tensile behaviour in silicon-killed boron microalloyed steels

Science.gov (United States)

Chown, Lesley H.; Cornish, Lesley A.

2017-10-01

Low carbon steel for drawing and cold heading applications should have low strength, high ductility and low strain ageing rates. To achieve this, nitrogen must be removed from solid solution, which can be done by low additions of boron. A wire producer had been experiencing occasional problems with severe cracking on silicon-killed, boron steel billets during continuous casting, but the solution was not obvious. Samples from four billets, each from different casts, were removed for analysis and testing. The tested steel compositions were within the specification limits, with boron to nitrogen ratios of 0.40-1.19. Hot ductility testing was performed on a Gleeble 1500 using parameters approximating the capabilities of this particular billet caster. The steel specimens were subjected to in situ melting, then cooled at a rate of 2 C.s-1 to temperatures in the range 750-1250°C, where they were then pulled to failure at a strain rate of 8x10-4 s-1. In this work, it was found that both the boron to nitrogen ratio and the manganese to sulphur ratio influenced the hot ductility and hence the crack susceptibility. Excellent hot ductility was found for B:N ratios above 1.0, which confirmed that the B:N ratio should be above a stoichiometric value of 0.8 to remove all nitrogen from solid solution. TEM analysis showed that coarse BN precipitates nucleated on other precipitates, such as (Fe,Mn)S, which have relatively low melting points, and are detrimental to hot ductility. Low Mn:S ratios of 10 - 12 were shown to promote precipitation of FeS, so a Mn:S > 14 was recommended. A narrower billet surface temperature range for straightening was recommended to prevent transverse surface cracking. Additionally, analysis of industrial casting data showed that the scrap percentage due to transverse cracking increased significantly for Mn:S < 14. An exponential decay relationship between the manganese to sulphur ratio and the average scrap percentage due to transverse cracking was

An FPGA-based silicon neuronal network with selectable excitability silicon neurons

Directory of Open Access Journals (Sweden)

Jing eLi

2012-12-01

Full Text Available This paper presents a digital silicon neuronal network which simulates the nerve system in creatures and has the ability to execute intelligent tasks, such as associative memory. Two essential elements, the mathematical-structure-based digital spiking silicon neuron (DSSN and the transmitter release based silicon synapse, allow the network to show rich dynamic behaviors and are computationally efficient for hardware implementation. We adopt mixed pipeline and parallel structure and shift operations to design a sufficient large and complex network without excessive hardware resource cost. The network with $256$ full-connected neurons is built on a Digilent Atlys board equipped with a Xilinx Spartan-6 LX45 FPGA. Besides, a memory control block and USB control block are designed to accomplish the task of data communication between the network and the host PC. This paper also describes the mechanism of associative memory performed in the silicon neuronal network. The network is capable of retrieving stored patterns if the inputs contain enough information of them. The retrieving probability increases with the similarity between the input and the stored pattern increasing. Synchronization of neurons is observed when the successful stored pattern retrieval occurs.

Wet-Chemical Preparation of Silicon Tunnel Oxides for Transparent Passivated Contacts in Crystalline Silicon Solar Cells.

Science.gov (United States)

Köhler, Malte; Pomaska, Manuel; Lentz, Florian; Finger, Friedhelm; Rau, Uwe; Ding, Kaining

2018-05-02

Transparent passivated contacts (TPCs) using a wide band gap microcrystalline silicon carbide (μc-SiC:H(n)), silicon tunnel oxide (SiO 2 ) stack are an alternative to amorphous silicon-based contacts for the front side of silicon heterojunction solar cells. In a systematic study of the μc-SiC:H(n)/SiO 2 /c-Si contact, we investigated selected wet-chemical oxidation methods for the formation of ultrathin SiO 2 , in order to passivate the silicon surface while ensuring a low contact resistivity. By tuning the SiO 2 properties, implied open-circuit voltages of 714 mV and contact resistivities of 32 mΩ cm 2 were achieved using μc-SiC:H(n)/SiO 2 /c-Si as transparent passivated contacts.

Radiation resistant passivation of silicon solar cells

International Nuclear Information System (INIS)

Swanson, R.M.; Gan, J.Y.; Gruenbaum, P.E.

1991-01-01

This patent describes a silicon solar cell having improved stability when exposed to concentrated solar radiation. It comprises a body of silicon material having a major surface for receiving radiation, a plurality of p and n conductivity regions in the body for collecting electrons and holes created by impinging radiation, and a passivation layer on the major surface including a first layer of silicon oxide in contact with the body and a polycrystalline silicon layer on the first layer of silicon oxide

Floating Silicon Method

Energy Technology Data Exchange (ETDEWEB)

Kellerman, Peter

2013-12-21

The Floating Silicon Method (FSM) project at Applied Materials (formerly Varian Semiconductor Equipment Associates), has been funded, in part, by the DOE under a “Photovoltaic Supply Chain and Cross Cutting Technologies” grant (number DE-EE0000595) for the past four years. The original intent of the project was to develop the FSM process from concept to a commercially viable tool. This new manufacturing equipment would support the photovoltaic industry in following ways: eliminate kerf losses and the consumable costs associated with wafer sawing, allow optimal photovoltaic efficiency by producing high-quality silicon sheets, reduce the cost of assembling photovoltaic modules by creating large-area silicon cells which are free of micro-cracks, and would be a drop-in replacement in existing high efficiency cell production process thereby allowing rapid fan-out into the industry.

Silicon photonics for telecommunications and biomedicine

CERN Document Server

Fathpour, Sasan

2011-01-01

Given silicon's versatile material properties, use of low-cost silicon photonics continues to move beyond light-speed data transmission through fiber-optic cables and computer chips. Its application has also evolved from the device to the integrated-system level. A timely overview of this impressive growth, Silicon Photonics for Telecommunications and Biomedicine summarizes state-of-the-art developments in a wide range of areas, including optical communications, wireless technologies, and biomedical applications of silicon photonics. With contributions from world experts, this reference guides

Spiral silicon drift detectors

International Nuclear Information System (INIS)

Rehak, P.; Gatti, E.; Longoni, A.; Sampietro, M.; Holl, P.; Lutz, G.; Kemmer, J.; Prechtel, U.; Ziemann, T.

1988-01-01

An advanced large area silicon photodiode (and x-ray detector), called Spiral Drift Detector, was designed, produced and tested. The Spiral Detector belongs to the family of silicon drift detectors and is an improvement of the well known Cylindrical Drift Detector. In both detectors, signal electrons created in silicon by fast charged particles or photons are drifting toward a practically point-like collection anode. The capacitance of the anode is therefore kept at the minimum (0.1pF). The concentric rings of the cylindrical detector are replaced by a continuous spiral in the new detector. The spiral geometry detector design leads to a decrease of the detector leakage current. In the spiral detector all electrons generated at the silicon-silicon oxide interface are collected on a guard sink rather than contributing to the detector leakage current. The decrease of the leakage current reduces the parallel noise of the detector. This decrease of the leakage current and the very small capacities of the detector anode with a capacitively matched preamplifier may improve the energy resolution of Spiral Drift Detectors operating at room temperature down to about 50 electrons rms. This resolution is in the range attainable at present only by cooled semiconductor detectors. 5 refs., 10 figs

Scattering characteristics from porous silicon

Directory of Open Access Journals (Sweden)

R. Sabet-Dariani

2000-12-01

Full Text Available   Porous silicon (PS layers come into existance as a result of electrochemical anodization on silicon. Although a great deal of research has been done on the formation and optical properties of this material, the exact mechanism involved is not well-understood yet.   In this article, first, the optical properties of silicon and porous silicon are described. Then, previous research and the proposed models about reflection from PS and the origin of its photoluminescence are reveiwed. The reflecting and scattering, absorption and transmission of light from this material, are then investigated. These experiments include,different methods of PS sample preparation their photoluminescence, reflecting and scattering of light determining different characteristics with respect to Si bulk.

Engineering piezoresistivity using biaxially strained silicon

DEFF Research Database (Denmark)

Pedersen, Jesper Goor; Richter, Jacob; Brandbyge, Mads

2008-01-01

of the piezocoefficient on temperature and dopant density is altered qualitatively for strained silicon. In particular, we find that a vanishing temperature coefficient may result for silicon with grown-in biaxial tensile strain. These results suggest that strained silicon may be used to engineer the iezoresistivity...

ePIXfab - The silicon photonics platform

NARCIS (Netherlands)

Khanna, A.; Drissi, Y.; Dumon, P.; Baets, R.; Absil, P.; Pozo Torres, J.M.; Lo Cascio, D.M.R.; Fournier, M.; Fedeli, J.M.; Fulbert, L.; Zimmermann, L.; Tillack, B.; Aalto, T.; O'Brien, P.; Deptuck, D.; Xu, J.; Gale, D.

2013-01-01

ePIXfab-The European Silicon Photonics Support Center continues to provide state-of-the-art silicon photonics solutions to academia and industry for prototyping and research. ePIXfab is a consortium of EU research centers providing diverse expertise in the silicon photonics food chain, from training

Nitrogen uptake and fertilizer nitrogen use efficiency of wheat under different soil water conditions

International Nuclear Information System (INIS)

Wang Baiqun; Zhang Wei; Yu Cunzu