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Sample records for ni oxide thin

  1. Thermal oxidation of Zr–Cu–Al–Ni amorphous metal thin films

    International Nuclear Information System (INIS)

    Oleksak, R.P.; Hostetler, E.B.; Flynn, B.T.; McGlone, J.M.; Landau, N.P.; Wager, J.F.; Stickle, W.F.; Herman, G.S.

    2015-01-01

    The initial stages of thermal oxidation for Zr–Cu–Al–Ni amorphous metal thin films were investigated using X-ray photoelectron spectroscopy, transmission electron microscopy and energy dispersive X-ray spectroscopy. The as-deposited films had oxygen incorporated during sputter deposition, which helped to stabilize the amorphous phase. After annealing in air at 300 °C for short times (5 min) this oxygen was found to segregate to the surface or buried interface. Annealing at 300 °C for longer times leads to significant composition variation in both vertical and lateral directions, and formation of a surface oxide layer that consists primarily of Zr and Al oxides. Surface oxide formation was initially limited by back-diffusion of Cu and Ni ( 30 min). The oxidation properties are largely consistent with previous observations of Zr–Cu–Al–Ni metallic glasses, however some discrepancies were observed which could be explained by the unique sample geometry of the amorphous metal thin films. - Highlights: • Thermal oxidation of amorphous Zr–Cu–Al–Ni thin films was investigated. • Significant short-range inhomogeneities were observed in the amorphous films. • An accumulation of Cu and Ni occurs at the oxide/metal interface. • Diffusion of Zr was found to limit oxide film growth.

  2. TiFeCoNi oxide thin film - A new composition with extremely low electrical resistivity at room temperature

    International Nuclear Information System (INIS)

    Yang, Ya-Chu; Tsau, Chun-Huei; Yeh, Jien-Wei

    2011-01-01

    We show the electrical resistivity of a TiFeCoNi oxide thin film. The electrical resistivity of the TiFeCoNi thin film decreased sharply after a suitable period of oxidation at high temperature. The lowest resistivity of the TiFeCoNi oxide film was 35 ± 3 μΩ-cm. The low electrical resistivity of the TiFeCoNi oxide thin film was attributed to Ti, which is more reactive than the other elements, reacting with oxygen at the initial stage of annealing. The low resistivity is caused by the remaining electrons.

  3. Thermal oxidation of Ni films for p-type thin-film transistors

    KAUST Repository

    Jiang, Jie; Wang, Xinghui; Zhang, Qing; Li, Jingqi; Zhang, Xixiang

    2013-01-01

    p-Type nanocrystal NiO-based thin-film transistors (TFTs) are fabricated by simply oxidizing thin Ni films at temperatures as low as 400 °C. The highest field-effect mobility in a linear region and the current on-off ratio are found to be 5.2 cm2 V-1 s-1 and 2.2 × 103, respectively. X-ray diffraction, transmission electron microscopy and electrical performances of the TFTs with "top contact" and "bottom contact" channels suggest that the upper parts of the Ni films are clearly oxidized. In contrast, the lower parts in contact with the gate dielectric are partially oxidized to form a quasi-discontinuous Ni layer, which does not fully shield the gate electric field, but still conduct the source and drain current. This simple method for producing p-type TFTs may be promising for the next-generation oxide-based electronic applications. © 2013 the Owner Societies.

  4. Fabrication of nickel oxide and Ni-doped indium tin oxide thin films using pyrosol process

    International Nuclear Information System (INIS)

    Nakasa, Akihiko; Adachi, Mami; Usami, Hisanao; Suzuki, Eiji; Taniguchi, Yoshio

    2006-01-01

    Organic light emitting diodes (OLEDs) need indium tin oxide (ITO) anodes with highly smooth surface. The work function of ITO, about 4.8 eV, is generally rather lower than the optimum level for application to OLEDs. In this work, NiO was deposited by pyrosol process on pyrosol ITO film to increase the work function of the ITO for improving the performance of OLEDs. It was confirmed that NiO was successfully deposited on pyrosol ITO film and the NiO deposition increased the work function of pyrosol ITO, using X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), atomic force microscopy (AFM) and atmospheric photoelectron spectroscopy. Furthermore, doping ITO with Ni succeeded in producing the Ni-doped ITO film with high work function and lower sheet resistance

  5. Excimer laser assisted re-oxidation of BaTiO3 thin films on Ni metal foils

    International Nuclear Information System (INIS)

    Bharadwaja, S. S. N.; Ko, S. W.; Qu, W.; Clark, T.; Rajashekhar, A.; Motyka, M.; Podraza, N.; Randall, C. A.; Trolier-McKinstry, S.

    2016-01-01

    Excimer laser assisted re-oxidation for reduced, crystallized BaTiO 3 thin films on Ni-foils was investigated. It was found that the BaTiO 3 can be re-oxidized at an oxygen partial pressure of ∼50 mTorr and substrate temperature of 350 °C without forming a NiO x interface layer between the film and base metal foil. The dielectric permittivity of re-oxidized films was >1000 with loss tangent values <2% at 100 Hz, 30 mV rms excitation signal. Electron Energy Loss Spectroscopy indicated that BaTiO 3 thin films can be re-oxidized to an oxygen stoichiometry close to ∼3 (e.g., stoichiometric). High resolution cross sectional transmission electron microscopy showed no evidence of NiO x formation between the BaTiO 3 and the Ni foil upon excimer laser re-oxidation. Spectroscopic ellipsometry studies on laser re-oxidized [001] C and [111] C BaTiO 3 single crystals indicate that the re-oxidation of BaTiO 3 single crystals is augmented by photo-excitation of the ozone, as well as laser pulse induced temperature and local stress gradients

  6. Transparent conducting properties of Ni doped zinc oxide thin films prepared by a facile spray pyrolysis technique using perfume atomizer

    Energy Technology Data Exchange (ETDEWEB)

    Bouaoud, A.; Rmili, A.; Ouachtari, F.; Louardi, A.; Chtouki, T. [Laboratoire des Hautes Energies, Sciences de l' Ingenierie et Reacteurs (LHESIR), Equipe Ingenierie et Materiaux (INMA), Departement de Physique, Faculte des Sciences, Kenitra (Morocco); Elidrissi, B., E-mail: e.bachir@mailcity.com [Laboratoire des Hautes Energies, Sciences de l' Ingenierie et Reacteurs (LHESIR), Equipe Ingenierie et Materiaux (INMA), Departement de Physique, Faculte des Sciences, Kenitra (Morocco); Erguig, H. [Laboratoire des Hautes Energies, Sciences de l' Ingenierie et Reacteurs (LHESIR), Equipe Ingenierie et Materiaux (INMA), Departement de Physique, Faculte des Sciences, Kenitra (Morocco); Ecole Nationale des Sciences Appliquees de Kenitra (ENSAK) (Morocco)

    2013-01-15

    Undoped and Ni doped zinc oxide (Ni-ZnO) thin films were prepared by a facile spray pyrolysis technique using perfume atomizer from aqueous solution of anhydrous zinc acetate (Zn(CH{sub 3}COOH){sub 2} and hexahydrated nickel chloride (NiCl{sub 2}{center_dot}6H{sub 2}O) as sources of zinc and nickel, respectively. The films were deposited onto the amorphous glass substrates kept at (450 Degree-Sign C). The effect of the [Ni]/[Zn] ratio on the structural, morphological, optical and electrical properties of Ni doped ZnO thin film was studied. It was found from X-ray diffraction (XRD) analysis that both the undoped and Ni doped ZnO films were crystallized in the hexagonal structure with a preferred orientation of the crystallites along the [002] direction perpendicular to the substrate. The scanning electron microscopy (SEM) images showed a relatively dense surface structure composed of crystallites in the spherical form whose average size decreases when the [Ni]/[Zn] ratio increases. The optical study showed that all the films were highly transparent. The optical transmittance in the visible region varied between 75 and 85%, depending on the dopant concentrations. The variation of the band gap versus the [Ni]/[Zn] ratio showed that the energy gap decreases from 2.95 to 2.72 eV as the [Ni]/[Zn] ratio increases from 0 to 0.02 and then increases to reach 3.22 eV for [Ni]/[Zn] = 0.04. The films obtained with the [Ni]/[Zn] ratio = 0.02 showed minimum resistivity of 2 Multiplication-Sign 10{sup -3} {Omega} cm at room temperature. -- Highlights: Black-Right-Pointing-Pointer The optical transmittance of Ni doped ZnO varies between 75 and 85%. Black-Right-Pointing-Pointer The energy gap of these films decreases from 2.95 to 2.72 eV as the [Ni]/[Zn] ratio increases from 0 to 0.02. Black-Right-Pointing-Pointer The energy gap increases to reach 3.22 eV for [Ni]/[Zn] = 0.04. Black-Right-Pointing-Pointer The films obtained with [Ni]/[Zn] ratio = 0.02 show minimum resistivity of 2

  7. Influence of Ti Content on the Partial Oxidation of TixFeCoNi Thin Films in Vacuum Annealing

    Directory of Open Access Journals (Sweden)

    Ya-Chu Yang

    2017-09-01

    Full Text Available This study investigated the effects of Ti content and vacuum annealing on the microstructure evolution of TixFeCoNi (x = 0, 0.5, and 1 thin films and the underlying mechanisms. The as-deposited thin film transformed from an FCC (face center cubic structure at x = 0 into an amorphous structure at x = 1, which can be explained by determining topological instability and a hard ball model. After annealing was performed at 1000 °C for 30 min, the films presented a layered structure comprising metal solid solutions and oxygen-deficient oxides, which can be major attributed to oxygen traces in the vacuum furnace. Different Ti contents provided various phase separation and layered structures. The underlying mechanism is mainly related to the competition among possible oxides in terms of free energy production at 1000 °C.

  8. The Microstructures and Electrical Resistivity of (Al, Cr, TiFeCoNiOx High-Entropy Alloy Oxide Thin Films

    Directory of Open Access Journals (Sweden)

    Chun-Huei Tsau

    2015-01-01

    Full Text Available The (Al, Cr, TiFeCoNi alloy thin films were deposited by PVD and using the equimolar targets with same compositions from the concept of high-entropy alloys. The thin films became metal oxide films after annealing at vacuum furnace for a period; and the resistivity of these thin films decreased sharply. After optimum annealing treatment, the lowest resistivity of the FeCoNiOx, CrFeCoNiOx, AlFeCoNiOx, and TiFeCoNiOx films was 22, 42, 18, and 35 μΩ-cm, respectively. This value is close to that of most of the metallic alloys. This phenomenon was caused by delaminating of the alloy oxide thin films because the oxidation was from the surfaces of the thin films. The low resistivity of these oxide films was contributed to the nonfully oxidized elements in the bottom layers and also vanishing of the defects during annealing.

  9. An investigation of thin-film Ni-Fe oxide catalysts for the electrochemical evolution of oxygen.

    Science.gov (United States)

    Louie, Mary W; Bell, Alexis T

    2013-08-21

    A detailed investigation has been carried out of the structure and electrochemical activity of electrodeposited Ni-Fe films for the oxygen evolution reaction (OER) in alkaline electrolytes. Ni-Fe films with a bulk and surface composition of 40% Fe exhibit OER activities that are roughly 2 orders of magnitude higher than that of a freshly deposited Ni film and about 3 orders of magnitude higher than that of an Fe film. The freshly deposited Ni film increases in activity by as much as 20-fold during exposure to the electrolyte (KOH); however, all films containing Fe are stable as deposited. The oxidation of Ni(OH)2 to NiOOH in Ni films occurs at potentials below the onset of the OER. Incorporation of Fe into the film increases the potential at which Ni(OH)2/NiOOH redox occurs and decreases the average oxidation state of Ni in NiOOH. The Tafel slope (40 mV dec(-1)) and reaction order in OH(-) (1) for the mixed Ni-Fe films (containing up to 95% Fe) are the same as those for aged Ni films. In situ Raman spectra acquired in 0.1 M KOH at OER potentials show two bands characteristic of NiOOH. The relative intensities of these bands vary with Fe content, indicating a change in the local environment of Ni-O. Similar changes in the relative intensities of the bands and an increase in OER activity are observed when pure Ni films are aged. These observations suggest that the OER is catalyzed by Ni in Ni-Fe films and that the presence of Fe alters the redox properties of Ni, causing a positive shift in the potential at which Ni(OH)2/NiOOH redox occurs, a decrease in the average oxidation state of the Ni sites, and a concurrent increase in the activity of Ni cations for the OER.

  10. Thin Solid Oxide Cell

    DEFF Research Database (Denmark)

    2010-01-01

    The present invention relates to a thin and in principle unsupported solid oxide cell, comprising at least a porous anode layer, an electrolyte layer and a porous cathode layer, wherein the anode layer and the cathode layer comprise an electrolyte material, at least one metal and a catalyst...... material, and wherein the overall thickness of the thin reversible cell is about 150 [mu]m or less, and to a method for producing same. The present invention also relates to a thin and in principle unsupported solid oxide cell, comprising at least a porous anode layer, an electrolyte layer and a porous...... cathode layer, wherein the anode layer and the cathode layer comprise an electrolyte material and a catalyst material, wherein the electrolyte material is doper zirconia, and wherein the overall thickness of the thin reversible cell is about 150 [mu]m or less, and to a method for producing same...

  11. Thin film metal-oxides

    CERN Document Server

    Ramanathan, Shriram

    2009-01-01

    Presents an account of the fundamental structure-property relations in oxide thin films. This title discusses the functional properties of thin film oxides in the context of applications in the electronics and renewable energy technologies.

  12. Rare Earth Oxide Thin Films

    CERN Document Server

    Fanciulli, Marco

    2007-01-01

    Thin rare earth (RE) oxide films are emerging materials for microelectronic, nanoelectronic, and spintronic applications. The state-of-the-art of thin film deposition techniques as well as the structural, physical, chemical, and electrical properties of thin RE oxide films and of their interface with semiconducting substrates are discussed. The aim is to identify proper methodologies for the development of RE oxides thin films and to evaluate their effectiveness as innovative materials in different applications.

  13. Study of structural and electrical properties of thin NiOx films prepared by ion beam sputtering of Ni and subsequent thermo-oxidation

    Czech Academy of Sciences Publication Activity Database

    Horák, Pavel; Lavrentiev, Vasyl; Bejšovec, Václav; Vacík, Jiří; Daniš, S.; Vrňata, M.; Khun, J.

    2013-01-01

    Roč. 86, č. 11 (2013), s. 470 ISSN 1434-6028 R&D Projects: GA ČR(CZ) GBP108/12/G108 Institutional support: RVO:61389005 Keywords : NiO film * electrical properties Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.463, year: 2013

  14. Improved performance of LaNi0.6Fe0.4O3 solid oxide fuel cell cathode by application of a thin interface cathode functional layer

    DEFF Research Database (Denmark)

    Molin, Sebastian; Jasinski, Piotr Z.

    2017-01-01

    In this work, novel functional layers were prepared by a low temperature spray pyrolysis method on the oxygen side of the solid oxide cells. Thin layers of Ce0.8Gd0.2O2 and LaNi0.6Fe0.4O3 are prepared between the electrolyte and the porous oxygen electrode. Additionally the influence of the sprayed...... ceria barrier layer on the zirconia based electrolyte with the new layers is evaluated. Impedance spectroscopy results show improvement in contact between the electrolyte and the porous cathode electrode. Additionally, electrochemical performance of the cathode is improved, as evidenced by a lowered...

  15. Developing high-transmittance heterojunction diodes based on NiO/TZO bilayer thin films

    Science.gov (United States)

    2013-01-01

    In this study, radio frequency magnetron sputtering was used to deposit nickel oxide thin films (NiO, deposition power of 100 W) and titanium-doped zinc oxide thin films (TZO, varying deposition powers) on glass substrates to form p(NiO)-n(TZO) heterojunction diodes with high transmittance. The structural, optical, and electrical properties of the TZO and NiO thin films and NiO/TZO heterojunction devices were investigated with scanning electron microscopy, X-ray diffraction (XRD) patterns, UV-visible spectroscopy, Hall effect analysis, and current-voltage (I-V) analysis. XRD analysis showed that only the (111) diffraction peak of NiO and the (002) and (004) diffraction peaks of TZO were observable in the NiO/TZO heterojunction devices, indicating that the TZO thin films showed a good c-axis orientation perpendicular to the glass substrates. When the sputtering deposition power for the TZO thin films was 100, 125, and 150 W, the I-V characteristics confirmed that a p-n junction characteristic was successfully formed in the NiO/TZO heterojunction devices. We show that the NiO/TZO heterojunction diode was dominated by the space-charge limited current theory. PMID:23634999

  16. Mechanisms of fatigue in LIGA Ni MEMS thin films

    International Nuclear Information System (INIS)

    Yang, Y.; Imasogie, B.I.; Allameh, S.M.; Boyce, B.; Lian, K.; Lou, J.; Soboyejo, W.O.

    2007-01-01

    This paper presents the results of an experimental study of the mechanisms of fatigue in LIGA Ni micro-electro-mechanical systems (MEMS) thin films with micro-scale columnar and nano-scale equiaxed grains. Stress-life behavior is reported for films with thicknesses of 70 and 270 μm. The stress-life data are compared with previously reported data for Ni MEMS films and bulk Ni. The films with the nano-scale grains (15 nm average grain size) are shown to have higher strength and fatigue resistance (stress-life data) than those with columnar grain structures. The thicker films (with a columnar microstructure) are also shown to have comparable fatigue life to annealed Ni, while the thinner films (with a columnar microstructure) have comparable fatigue life to wrought Ni. The underlying mechanisms of crack nucleation and growth are elucidated via scanning and transmission electron microscopy. These reveal the formation of slip bands and surface oxides and crystallographic surface/sub-surface crack nucleation and growth in the films with the columnar structures. Surface and corner crack nucleations (from pre-existing defects) are observed in the nanostructured films. The implications of the results are discussed for the analyses of fatigue in nickel MEMS structures

  17. Structural and Electrochemical Properties of Lithium Nickel Oxide Thin Films

    Directory of Open Access Journals (Sweden)

    Gyu-bong Cho

    2014-01-01

    Full Text Available LiNiO2 thin films were fabricated by RF magnetron sputtering. The microstructure of the films was determined by X-ray diffraction and field-emission scanning electron microscopy. The electrochemical properties were investigated with a battery cycler using coin-type half-cells. The LiNiO2 thin films annealed below 500°C had the surface carbonate. The results suggest that surface carbonate interrupted the Li intercalation and deintercalation during charge/discharge. Although the annealing process enhanced the crystallization of LiNiO2, the capacity did not increase. When the annealing temperature was increased to 600°C, the FeCrNiO4 oxide phase was generated and the discharge capacity decreased due to an oxygen deficiency in the LiNiO2 thin film. The ZrO2-coated LiNiO2 thin film provided an improved discharge capacity compared to bare LiNiO2 thin film suggesting that the improved electrochemical characteristic may be attributed to the inhibition of surface carbonate by ZrO2 coating layer.

  18. Effect of substrate temperature and oxygen partial pressure on RF sputtered NiO thin films

    Science.gov (United States)

    Cheemadan, Saheer; Santhosh Kumar, M. C.

    2018-04-01

    Nickel oxide (NiO) thin films were deposited by RF sputtering process and the physical properties were investigated for varying substrate temperatures and oxygen partial pressure. The variation of the crystallographic orientation and microstructure of the NiO thin films with an increase in substrate temperature were studied. It was observed that NiO thin films deposited at 350 °C shows relatively good crystalline characteristics with a preferential orientation along (111) plane. With the optimum substrate temperature of 350 °C, the NiO thin films were deposited under various oxygen partial pressures at the same experimental conditions. The structural, optical and electrical properties of NiO thin films under varying oxygen partial pressure of 10%–50% were investigated. From XRD it is clear that the films prepared in the pure argon atmosphere were amorphous while the films in oxygen partial pressure exhibited polycrystalline NiO phase. SEM and AFM investigations unveil that the higher substrate temperature improves the microstructure of the thin films. It is revealed that the NiO thin films deposited at oxygen partial pressure of 40% and a substrate temperature of 350 °C, showed higher electrical conductivity with p-type characteristics.

  19. Thin zirconium oxides

    International Nuclear Information System (INIS)

    Oviedo, Cristina

    2000-01-01

    Polycrystalline Zr and two pure Zr single-crystal samples, one oriented with the normal to the surface parallel to the c-axis of the hcp structure (Z1) and the other with the normal perpendicular to c (Z2), were oxidised at 10 -8 , 10 -7 and 10 -6 Torr and room temperature. Oxidation kinetics, composition and thicknesses of the oxide films formed in each case were analyzed using XPS (X-ray Photoelectron Spectroscopy) as the main technique. The oxidation kinetics followed logarithmic laws in all cases. The deconvolution of XPS Zr3d peaks indicated the formation of two Zr-O compounds before the formation of ZrO 2 . Varying the photoelectrons take-off angle, the compound distribution inside the oxide films could be established. Thus, it was confirmed that the most external oxide, in contact with the gas, was ZrO 2 . The thickness of the films grown at the different pressures was determined. In the polycrystalline samples, thicknesses between 15 and 19 ± 2Angstroem were obtained for pressures between 10 -8 and 10 -6 Torr, in close coincidence with the determined ones for Z2. The thicknesses measured in Z1 were smaller, reaching 13 ± 2Angstroem for the oxidations performed at 10 -6 Torr. (author)

  20. Photochemical deposition of NiCoO x thin films from Ni/Co heteronuclear triketonate complexes

    International Nuclear Information System (INIS)

    Buono-Core, G.E.; Tejos, M.; Cabello, G.; Guzman, N.; Hill, R.H.

    2006-01-01

    UV light irradiation of thin films of a polyketonate Ni/Co heteronuclear complex, NiCo(DBA) 2 [DBA, dibenzoylacetone)], spin coated on Si(1 0 0) substrates produced NiCoO x mixed oxides as amorphous films. On annealing at 600 deg. C under air, the mixed oxide film decomposed to NiO and CoO as indicated by XRD measurements. The morphology of the as-deposited films was examined by AFM analysis showing a smooth surface with low rms roughness values. The ratio of Ni/Co (1.08) present in the film reflects the stoichiometry in the starting compound within the experimental error, as shown by XPS analysis. The large amount of carbon (20.8%) detected on the surface of the film may be due to the presence of phenyl rings in the precursor complex

  1. Surface properties of nanostructured NiO undergoing electrochemical oxidation in 3-methoxy-propionitrile

    Science.gov (United States)

    Bonomo, Matteo; Marrani, Andrea Giacomo; Novelli, Vittoria; Awais, Muhammad; Dowling, Denis P.; Vos, Johannes G.; Dini, Danilo

    2017-05-01

    Nanostructured nickel oxide (NiO) was deposited in the configuration of thin film (thickness, l = 2-6 μm) onto fluorine-doped tin oxide (FTO) substrates via plasma-assisted rapid discharge sintering (RDS). Electrochemical cycling of RDS NiO in 3-methoxy-propionitrile (3-MPN) revealed two characteristic peaks of NiO oxidation which were associated to the surface-confined redox processes Ni(II) → Ni(III) and Ni(III) → Ni(IV). Grazing angle X-ray photoelectron spectroscopy (XPS) was conducted ex-situ on NiO electrodes in both pristine and oxidized states. Oxidized NiO samples for XPS experiments were obtained in the potentiostatic mode through the polarization of NiO at its two characteristic potentials of oxidation. The XPS analysis allowed to ascertain the electronic structure of the nanoporous NiO framework, and verify the adsorption of perchlorate and chloride anions onto NiO surface due to the compensation of the charge stored in oxidized NiO. XPS also revealed that the spectrum within the region characteristic of Ni 2p ionization does not vary considerably with the state of charge of the nickel centres. This finding is in evident contrast to what has been observed for the same system when it undergoes electrochemical oxidation in aqueous electrolyte.

  2. Setting of an experimental simple technique for the realization of Ni2V2O7 thin films

    International Nuclear Information System (INIS)

    Baba, Ali E.; Bernede, J.C.; Zoaeter, M.

    1999-01-01

    Full text.Ni/V/Ni/V..../Ni/V/Ni thin layers were sequentially deposited in the atomic ratio Ni/V=1.Ni and V were deposited by an electron beam. The samples were annealed half an hour at 863K in room atmosphere. The films were characterized by x-ray diffraction, x-ray photoelectron spectroscopy (XPS), scanning electron microscopy and microprobe analysis. The results obtained, by comparison with those obtained on a reference powder, show that Ni 2 V 2 O 7 thin films crystallized in the monoclinic structure P21/c layer. Since SnO 2 is transparent conductive oxide this is very promising for the use of such oxides as negative electrode in thin film batteries

  3. Surface properties of nanostructured NiO undergoing electrochemical oxidation in 3-methoxy-propionitrile

    Energy Technology Data Exchange (ETDEWEB)

    Bonomo, Matteo [Department of Chemistry, University of Rome “La Sapienza”, Piazzale Aldo Moro 5, 00185 Rome (Italy); Marrani, Andrea Giacomo, E-mail: andrea.marrani@uniroma1.it [Department of Chemistry, University of Rome “La Sapienza”, Piazzale Aldo Moro 5, 00185 Rome (Italy); Novelli, Vittoria [Department of Chemistry, University of Rome “La Sapienza”, Piazzale Aldo Moro 5, 00185 Rome (Italy); Awais, Muhammad [Department of Industrial Engineering, “King Abdulaziz” University, Rabigh (Saudi Arabia); Solar Energy Conversion Strategic Research Cluster, University College Dublin (UCD), Belfield, Dublin 4 (Ireland); Dowling, Denis P. [Solar Energy Conversion Strategic Research Cluster, University College Dublin (UCD), Belfield, Dublin 4 (Ireland); School of Mechanical and Materials Engineering, University College Dublin (UCD), Belfield, Dublin 4 (Ireland); Vos, Johannes G. [School of Chemical Sciences, Dublin City University (DCU), Glasnevin, Dublin 9 (Ireland); Dini, Danilo [Department of Chemistry, University of Rome “La Sapienza”, Piazzale Aldo Moro 5, 00185 Rome (Italy); Solar Energy Conversion Strategic Research Cluster, University College Dublin (UCD), Belfield, Dublin 4 (Ireland)

    2017-05-01

    Highlights: • NiO porous thin films were prepared via RDS technique. • NiO electrodes were characterized in a nitrile based electrochemical cell. • NiO electrodes were studied by means of XPS. • The XP spectra excluded the formation of phases other than NiO. • The presence of ClO{sub 4}{sup −} as charge balancing species was evidenced. - Abstract: Nanostructured nickel oxide (NiO) was deposited in the configuration of thin film (thickness, l = 2–6 μm) onto fluorine-doped tin oxide (FTO) substrates via plasma-assisted rapid discharge sintering (RDS). Electrochemical cycling of RDS NiO in 3-methoxy-propionitrile (3-MPN) revealed two characteristic peaks of NiO oxidation which were associated to the surface-confined redox processes Ni(II) → Ni(III) and Ni(III) → Ni(IV). Grazing angle X-ray photoelectron spectroscopy (XPS) was conducted ex-situ on NiO electrodes in both pristine and oxidized states. Oxidized NiO samples for XPS experiments were obtained in the potentiostatic mode through the polarization of NiO at its two characteristic potentials of oxidation. The XPS analysis allowed to ascertain the electronic structure of the nanoporous NiO framework, and verify the adsorption of perchlorate and chloride anions onto NiO surface due to the compensation of the charge stored in oxidized NiO. XPS also revealed that the spectrum within the region characteristic of Ni 2p ionization does not vary considerably with the state of charge of the nickel centres. This finding is in evident contrast to what has been observed for the same system when it undergoes electrochemical oxidation in aqueous electrolyte.

  4. Surface properties of nanostructured NiO undergoing electrochemical oxidation in 3-methoxy-propionitrile

    International Nuclear Information System (INIS)

    Bonomo, Matteo; Marrani, Andrea Giacomo; Novelli, Vittoria; Awais, Muhammad; Dowling, Denis P.; Vos, Johannes G.; Dini, Danilo

    2017-01-01

    Highlights: • NiO porous thin films were prepared via RDS technique. • NiO electrodes were characterized in a nitrile based electrochemical cell. • NiO electrodes were studied by means of XPS. • The XP spectra excluded the formation of phases other than NiO. • The presence of ClO 4 − as charge balancing species was evidenced. - Abstract: Nanostructured nickel oxide (NiO) was deposited in the configuration of thin film (thickness, l = 2–6 μm) onto fluorine-doped tin oxide (FTO) substrates via plasma-assisted rapid discharge sintering (RDS). Electrochemical cycling of RDS NiO in 3-methoxy-propionitrile (3-MPN) revealed two characteristic peaks of NiO oxidation which were associated to the surface-confined redox processes Ni(II) → Ni(III) and Ni(III) → Ni(IV). Grazing angle X-ray photoelectron spectroscopy (XPS) was conducted ex-situ on NiO electrodes in both pristine and oxidized states. Oxidized NiO samples for XPS experiments were obtained in the potentiostatic mode through the polarization of NiO at its two characteristic potentials of oxidation. The XPS analysis allowed to ascertain the electronic structure of the nanoporous NiO framework, and verify the adsorption of perchlorate and chloride anions onto NiO surface due to the compensation of the charge stored in oxidized NiO. XPS also revealed that the spectrum within the region characteristic of Ni 2p ionization does not vary considerably with the state of charge of the nickel centres. This finding is in evident contrast to what has been observed for the same system when it undergoes electrochemical oxidation in aqueous electrolyte.

  5. Sensitive Capacitive-type Hydrogen Sensor Based on Ni Thin Film in Different Hydrogen Concentrations.

    Science.gov (United States)

    Pour, Ghobad Behzadi; Aval, Leila Fekri; Eslami, Shahnaz

    2018-04-01

    Hydrogen sensors are micro/nano-structure that are used to locate hydrogen leaks. They are considered to have fast response/recovery time and long lifetime as compared to conventional gas sensors. In this paper, fabrication of sensitive capacitive-type hydrogen gas sensor based on Ni thin film has been investigated. The C-V curves of the sensor in different hydrogen concentrations have been reported. Dry oxidation was done in thermal chemical vapor deposition furnace (TCVD). For oxidation time of 5 min, the oxide thickness was 15 nm and for oxidation time 10 min, it was 20 nm. The Ni thin film as a catalytic metal was deposited on the oxide film using electron gun deposition. Two MOS sensors were compared with different oxide film thickness and different hydrogen concentrations. The highest response of the two MOS sensors with 15 nm and 20 nm oxide film thickness in 4% hydrogen concentration was 87.5% and 65.4% respectively. The fast response times for MOS sensors with 15 nm and 20 nm oxide film thickness in 4% hydrogen concentration was 8 s and 21 s, respectively. By increasing the hydrogen concentration from 1% to 4%, the response time for MOS sensor (20nm oxide thickness), was decreased from 28s to 21s. The recovery time was inversely increased from 237s to 360s. The experimental results showed that the MOS sensor based on Ni thin film had a quick response and a high sensitivity.

  6. Surface microstructures and corrosion resistance of Ni-Ti-Nb shape memory thin films

    Energy Technology Data Exchange (ETDEWEB)

    Li, Kun [School of Materials Science and Engineering, Beihang University, Beijing 100191 (China); Beijing Key Laboratory for Advanced Functional Materials and Thin Film Technology, Beihang University, Beijing 100191 (China); Faculty of Engineering and Environment, Northumbria University, Newcastle Upon Tyne NE1 8ST (United Kingdom); Li, Yan, E-mail: liyan@buaa.edu.cn [School of Materials Science and Engineering, Beihang University, Beijing 100191 (China); Beijing Key Laboratory for Advanced Functional Materials and Thin Film Technology, Beihang University, Beijing 100191 (China); Huang, Xu [Memry Corporation, Bethel, CT 06801 (United States); Gibson, Des [Institute of Thin Films, Sensors & Imaging, Scottish Universities Physics Alliance, University of the West of Scotland, Paisley PA1 2BE (United Kingdom); Zheng, Yang; Liu, Jiao; Sun, Lu [School of Materials Science and Engineering, Beihang University, Beijing 100191 (China); Beijing Key Laboratory for Advanced Functional Materials and Thin Film Technology, Beihang University, Beijing 100191 (China); Fu, Yong Qing, E-mail: richard.fu@northumbria.ac.uk [Faculty of Engineering and Environment, Northumbria University, Newcastle Upon Tyne NE1 8ST (United Kingdom)

    2017-08-31

    Highlights: • The corrosion resistance of Ni-Ti-Nb shape memory thin films is investigated. • Modified surface oxide layers improve the corrosion resistance of Ni-Ti-Nb films. • Further Nb additions reduce the potential corrosion tendency of the films. - Abstract: Ni-Ti-Nb and Ni-Ti shape memory thin films were sputter-deposited onto silicon substrates and annealed at 600 °C for crystallization. X-ray diffraction (XRD) measurements indicated that all of the annealed Ni-Ti-Nb films were composed of crystalline Ni-Ti (Nb) and Nb-rich grains. X-ray photoelectron spectroscopy (XPS) tests showed that the surfaces of Ni-Ti-Nb films were covered with Ti oxides, NiO and Nb{sub 2}O{sub 5}. The corrosion resistance of the Ni-Ti-Nb films in 3.5 wt.% NaCl solution was investigated using electrochemical tests such as open-circuit potential (OCP) and potentio-dynamic polarization tests. Ni-Ti-Nb films showed higher OCPs, higher corrosion potentials (E{sub corr}) and lower corrosion current densities (i{sub corr}) than the binary Ni-Ti film, which indicated a better corrosion resistance. The reason may be that Nb additions modified the passive layer on the film surface. The OCPs of Ni-Ti-Nb films increased with further Nb additions, whereas no apparent difference of E{sub corr} and i{sub corr} was found among the Ni-Ti-Nb films.

  7. Enhancement of room temperature ferromagnetic behavior of rf sputtered Ni-CeO_2 thin films

    International Nuclear Information System (INIS)

    Murugan, R.; Vijayaprasath, G.; Mahalingam, T.; Ravi, G.

    2016-01-01

    Highlights: • Ni-CeO_2 thin films deposited by using rf Magnetron sputtering with different concentrations of Ni. • Deposited thin films have single crystalline and uniform surface morphology. • Photoluminescence and micro-Raman spectra were interpreted for Ni-CeO_2 thin films. • XPS spectra confirmed Ni ions were present in the doped CeO_2 thin films. • Ni ions induced ferromagnetic behavior of Ni-CeO_2 films were confirmed through VSM. - Abstract: Ni-doped CeO_2 thin films were prepared under Ar"+ atmosphere on glass substrates using rf magnetron sputtering. To assess the properties of the prepared thin films, the influence of various amounts of Ni dopant on structural, morphological, optical, vibrational, compositional and magnetic properties of the CeO_2 films were studied by using X-Ray diffraction (XRD), atomic force microscope (AFM), photoluminescence (PL), micro-Raman, X-ray photoelectron spectroscopy (XPS) and vibrating sample magnetometer (VSM). XRD patterns for all the samples revealed the expected CeO_2 cubic fluorite-type structure and Ni ions were uniformly distributed in the samples. AFM images of the prepared samples indicate high dense, columnar structure with uniform distribution of CeO_2. Room-temperature photoluminescence (PL) and micro-Raman spectroscopic studies revealed an increase of oxygen vacancies with higher concentration of Ni in CeO_2. XPS results confirm the presence of Ni_2_p, O_1_s and Ce and depict that cerium is present as both Ce"4"+ and Ce"3"+ oxidation states in Ce_1_−_xNi_xO_2 (x = 15%) thin film. Field dependent magnetization measurements revealed a paramagnetic behavior for pure CeO_2, while a ferromagnetic behavior appeared when Ni is doped in CeO_2 films. Doping dependent magnetization measurements suggest that the observed ferromagnetism is due to the presence of metallic Ni clusters with nanometric size and broad size distribution.

  8. Thin NiTi Films Deposited on Graphene Substrates

    Science.gov (United States)

    Hahn, S.; Schulze, A.; Böhme, M.; Hahn, T.; Wagner, M. F.-X.

    2017-03-01

    We present experimental results on the deposition of Nickel Titanium (NiTi) films on graphene substrates using a PVD magnetron sputter process. Characterization of the 2-4 micron thick NiTi films by electron microscopy, electron backscatter diffraction, and transmission electron microscopy shows that grain size and orientation of the thin NiTi films strongly depend on the type of combination of graphene and copper layers below. Our experimental findings are supported by density functional theory calculations: a theoretical estimation of the binding energies of different NiTi-graphene interfaces is in line with the experimentally determined microstructural features of the functional NiTi top layer.

  9. Highly spectrum-selective ultraviolet photodetector based on p-NiO/n-IGZO thin film heterojunction structure.

    Science.gov (United States)

    Li, H K; Chen, T P; Hu, S G; Li, X D; Liu, Y; Lee, P S; Wang, X P; Li, H Y; Lo, G Q

    2015-10-19

    Ultraviolet photodetector with p-n heterojunction is fabricated by magnetron sputtering deposition of n-type indium gallium zinc oxide (n-IGZO) and p-type nickel oxide (p-NiO) thin films on ITO glass. The performance of the photodetector is largely affected by the conductivity of the p-NiO thin film, which can be controlled by varying the oxygen partial pressure during the deposition of the p-NiO thin film. A highly spectrum-selective ultraviolet photodetector has been achieved with the p-NiO layer with a high conductivity. The results can be explained in terms of the "optically-filtering" function of the NiO layer.

  10. Rutherford backscattering spectrometry of thin NiCr layers

    International Nuclear Information System (INIS)

    Anklam, H.J.

    1984-01-01

    The possibilities and problems of characterizing thin films of NiCr by means of Rutherford backscattering spectrometry (RBS) are demonstrated. Thin resistor films of NiCr (10 to 30 nm thick) are deposited on SiO 2 by sputtering in air or oxygen. The electrical properties depend both on integral chemical composition of films and on local distribution of elements. The determination of composition (Ni-Cr ratio, oxygen content) and of depth profiles of elements by the aid of RBS is described. For solving special analytical problems different substrates as amorphous SiO 2 , Si monocrystals, and glassy carbon are used

  11. Surface microstructures and corrosion resistance of Ni-Ti-Nb shape memory thin films

    Science.gov (United States)

    Li, Kun; Li, Yan; Huang, Xu; Gibson, Des; Zheng, Yang; Liu, Jiao; Sun, Lu; Fu, Yong Qing

    2017-08-01

    Ni-Ti-Nb and Ni-Ti shape memory thin films were sputter-deposited onto silicon substrates and annealed at 600 °C for crystallization. X-ray diffraction (XRD) measurements indicated that all of the annealed Ni-Ti-Nb films were composed of crystalline Ni-Ti (Nb) and Nb-rich grains. X-ray photoelectron spectroscopy (XPS) tests showed that the surfaces of Ni-Ti-Nb films were covered with Ti oxides, NiO and Nb2O5. The corrosion resistance of the Ni-Ti-Nb films in 3.5 wt.% NaCl solution was investigated using electrochemical tests such as open-circuit potential (OCP) and potentio-dynamic polarization tests. Ni-Ti-Nb films showed higher OCPs, higher corrosion potentials (Ecorr) and lower corrosion current densities (icorr) than the binary Ni-Ti film, which indicated a better corrosion resistance. The reason may be that Nb additions modified the passive layer on the film surface. The OCPs of Ni-Ti-Nb films increased with further Nb additions, whereas no apparent difference of Ecorr and icorr was found among the Ni-Ti-Nb films.

  12. Effect of oxygen plasma treatment on crystal growth mode at pentacene/Ni interface in organic thin-film transistors.

    Science.gov (United States)

    Song, Bang Joo; Hong, Kihyon; Kim, Woong-Kwon; Kim, Kisoo; Kim, Sungjun; Lee, Jong-Lam

    2010-11-25

    We report how treatment of nickel (Ni) with O(2) plasma affects the polarity of Ni surface, crystallinity of pentacene film on the Ni, and electrical properties of pentacene organic thin-film transistors (OTFTs) that use Ni as source-drain electrodes. The polar component of surface energy in Ni surface increased from 8.1 to 43.3 mJ/m(2) after O(2)-plasma treatment for 10 s. From X-ray photoelectron spectra and secondary electron emission spectra, we found that NiO(x) was formed on the O(2)-plasma-treated Ni surface and the work function of O(2)-plasma-treated Ni was 0.85 eV higher than that of untreated Ni. X-ray diffraction and atomic force microscopy measurements showed that pentacene molecules are well aligned as a thin-film and grains grow much larger on O(2)-plasma-treated Ni than on untreated Ni. This change in the growth mode is attributed to the reduction of interaction energy between pentacene and Ni due to formation of oxide at the Ni/pentacene interface. Thus, O(2)-plasma treatment promoted the growth of well-ordered pentacene film and lowered both the hole injection barrier and the contact resistance between Ni and pentacene by forming NiO(x), enhancing the electrical property of bottom-contact OTFTs.

  13. Synthesis and electrochemical behavior of nanostructured cauliflower-shape Co-Ni/Co-Ni oxides composites

    International Nuclear Information System (INIS)

    Gupta, Vinay; Kawaguchi, Toshikazu; Miura, Norio

    2009-01-01

    Nanostructured Co-Ni/Co-Ni oxides were electrochemically deposited onto stainless steel electrode by electrochemical method and characterized for their structural and supercapacitive properties. The SEM images indicated that the obtained Co-Ni/Co-Ni oxides had cauliflower-type nanostructure. The X-ray diffraction pattern showed the formation of Co 3 O 4 , NiO, Co and Ni. The EDX elemental mapping images indicated that Ni, Co and O are distributed uniformly. The deposited Co-Ni/Co-Ni oxides showed good supercapacitive characteristics with a specific capacitance of 331 F/g at 1 mA/cm 2 current density in 1 M KOH electrolyte. A mechanism of the formation of cauliflower-shape Co-Ni/Co-Ni oxides was proposed. A variety of promising applications in the fields such as energy storage devices and sensors can be envisioned from Co-Ni/Co-Ni oxides

  14. Role of copper/vanadium on the optoelectronic properties of reactive RF magnetron sputtered NiO thin films

    Science.gov (United States)

    Panneerselvam, Vengatesh; Chinnakutti, Karthik Kumar; Thankaraj Salammal, Shyju; Soman, Ajith Kumar; Parasuraman, Kuppusami; Vishwakarma, Vinita; Kanagasabai, Viswanathan

    2018-04-01

    In this study, pristine nickel oxide (NiO), copper-doped NiO (Cu-NiO) and vanadium-doped NiO (V-NiO) thin films were deposited using reactive RF magnetron co-sputtering as a function of dopant sputtering power. Cu (0-8 at%) and V (0-1 at%) were doped into the NiO lattice by varying the sputtering power of Cu and V in the range of 5-15 W. The effect of dopant concentration on optoelectronic behavior is investigated by UV-Vis-NIR spectrophotometer and Hall measurements. XRD analysis showed that the preferred orientation of the cubic phase for undoped NiO changes from (200) to (111) plane when the sputtering parameters are varied. The observed changes in the lattice parameters and bonding states of the doped NiO indicate the substitution of Ni ions by monovalent Cu and trivalent V ions. The optical bandgap of pristine NiO, Cu-NiO, and V-NiO was found to be 3.6, 3.45, and 3.05 eV, respectively, with decreased transmittance and resistivity. Further analysis using SEM and AFM described the morphological behavior of doped NiO thin films and Raman spectroscopy indicated the structural changes on doping. These findings would be helpful in fabricating solid-state solar cells using doped NiO as efficient hole transporting material.

  15. Influence of Ni Solute segregation on the intrinsic growth stresses in Cu(Ni) thin films

    International Nuclear Information System (INIS)

    Kaub, T.M.; Felfer, P.; Cairney, J.M.; Thompson, G.B.

    2016-01-01

    Using intrinsic solute segregation in alloys, the compressive stress in a series of Cu(Ni) thin films has been studied. The highest compressive stress was noted in the 5 at.% Ni alloy, with increasing Ni concentration resulting in a subsequent reduction of stress. Atom probe tomography quantified Ni's Gibbsian interfacial excess in the grain boundaries and confirmed that once grain boundary saturation is achieved, the compressive stress was reduced. This letter provides experimental support in elucidating how interfacial segregation of excess adatoms contributes to the post-coalescence compressive stress generation mechanism in thin films. - Graphical abstract: Cu(Ni) film stress relationship with Ni additions. Atom probe characterization confirms solute enrichment in the boundaries, which was linked to stress response.

  16. Thickness dependent ferromagnetism in thermally decomposed NiO thin films

    Energy Technology Data Exchange (ETDEWEB)

    Ravikumar, Patta; Kisan, Bhagaban; Perumal, Alagarsamy, E-mail: perumal@iitg.ernet.in

    2016-11-15

    We report the effects of film thickness, annealing temperature and annealing environments on thermal decomposition behavior and resulting magnetic properties of NiO (t=50–300 nm) thin films. All the NiO films were prepared directly on thermally oxidized Si at ambient temperature using magnetron sputtering technique and post annealed at different temperatures (T{sub A}) under vacuum and oxygen atmospheres. As-deposited films exhibit face centered cubic structure with large lattice constant due to strain induced during sputtering process. With increasing T{sub A}, the lattice constant decreases due to the release of strain and thickness dependent thermal decomposition reaction of NiO into Ni has been observed for the NiO films annealed at 500 °C under vacuum condition. As a result, the antiferromagnetic nature of the as-deposited NiO films transforms into ferromagnetic one with dominant thickness dependent ferromagnetic behavior at room temperature. In addition, the existence of both Ni and NiO phases in the annealed NiO films shows noticeable exchange bias under field cooling condition. The behavior of thermal decomposition was not observed for the NiO films annealed under oxygen condition which results in no detectable change in the magnetic properties. The observed results are discussed on the basis of thickness dependent thermal decomposition in NiO films with increasing T{sub A} and changing annealing conditions. - Highlights: • Preparation of highly strained single layer NiO films with different thicknesses. • Study the effects of annealing under different environments on crystal structure. • Understanding the origin of thickness dependent thermal decomposition reaction. • Investigate the role of thermal decomposition reaction on the magnetic properties. • Study the interaction between NiO and Ni phases on the exchange bias mechanism.

  17. Electrodeposited Ni-W magnetic thin films with columnar nanocrystallites

    International Nuclear Information System (INIS)

    Sulitanu, N.; Brinza, F.

    2002-01-01

    Nanocrystalline Ni-W thin films (140 nm) containing from zero to 18 wt % W were electrolytically prepared and structural and magnetic characterized. XRD, SEM and TEM investigations have revealed that all segregated Ni columns are fcc-type whose [111] axis is oriented perpendicular to the film plane and have 140 nm in height and 6-27 nm in diameter. Depending on film composition, two types of nanostructures were observed: (a) single-phase nanostructure ( i nterphases , namely W enriched particles boundaries, and (b) two-phase nanostructure (7-18 wt %) in which a second Ni-W amorphous phase or even amorphous-disordered mixture separates the magnetic columnar Ni nanocrystallites (d = 6-14 nm). The columnar crystallites have an easy magnetization direction along their long axis mainly due to the in-plane internal biaxial stresses. Magnetic characteristics of prepared thin films are presented. (Authors)

  18. Electrochemical Thinning for Anodic Aluminum Oxide and Anodic Titanium Oxide

    Energy Technology Data Exchange (ETDEWEB)

    Lee, In Hae; Jo, Yun Kyoung; Kim, Yong Tae; Tak, Yong Sug; Choi, Jin Sub [Inha University, Incheon (Korea, Republic of)

    2012-05-15

    For given electrolytes, different behaviors of anodic aluminum oxide (AAO) and anodic titanium oxide (ATO) during electrochemical thinning are explained by ionic and electronic current modes. Branched structures are unavoidably created in AAO since the switch of ionic to electronic current is slow, whereas the barrier oxide in ATO is thinned without formation of the branched structures. In addition, pore opening can be possible in ATO if chemical etching is performed after the thinning process. The thinning was optimized for complete pore opening in ATO and potential-current behavior is interpreted in terms of ionic current-electronic current switching.

  19. Formation of titanium oxide coatings on NiTi shape memory alloys by selective oxidation

    International Nuclear Information System (INIS)

    Pohl, M.; Glogowski, T.; Kuehn, S.; Hessing, C.; Unterumsberger, F.

    2008-01-01

    Materials used for medical devices that are in contact with human tissue must have good corrosion resistance and biocompatibility. NiTi shape memory alloys (SMAs) are often used in medical applications due to their special functional and mechanical properties (shape memory effect, pseudo elasticity). Because of the high Ni content in nearly stoichiometric NiTi SMAs, the possibility of Ni being released needs to be considered as Ni may cause problems in the human body. SMAs exhibit a high intrinsic corrosion resistance because of the thermodynamic stability of Ni (thermodynamic reason) and the low degree of disorder in a thin protective TiO 2 -layer (kinetic reason). While therefore there is no need to be concerned too much about a normal corrosive attack in the human body, it has to be kept in mind that in medical applications, these materials represent one part of a tribological system where wear processes need to be considered. The formation of a uniform TiO 2 -layer can be beneficial in this respect. The selective oxidation of Ti to TiO 2 on the surface is a promising method to decrease the Ni release significantly. This can be achieved by controlling the partial pressure of oxygen during a controlled oxidation process. The atmosphere must be adjusted so that TiO 2 is stable while NiO cannot yet form. The result of a selective oxidation is a TiO 2 -layer that has an excellent degree of purity and represents a safe barrier against Ni emission

  20. Hydrothermally formed three-dimensional nanoporous Ni(OH)2 thin-film supercapacitors.

    Science.gov (United States)

    Yang, Yang; Li, Lei; Ruan, Gedeng; Fei, Huilong; Xiang, Changsheng; Fan, Xiujun; Tour, James M

    2014-09-23

    A three-dimensional nanoporous Ni(OH)2 thin-film was hydrothermally converted from an anodically formed porous layer of nickel fluoride/oxide. The nanoporous Ni(OH)2 thin-films can be used as additive-free electrodes for energy storage. The nanoporous layer delivers a high capacitance of 1765 F g(-1) under three electrode testing. After assembly with porous activated carbon in asymmetric supercapacitor configurations, the devices deliver superior supercapacitive performances with capacitance of 192 F g(-1), energy density of 68 Wh kg(-1), and power density of 44 kW kg(-1). The wide working potential window (up to 1.6 V in 6 M aq KOH) and stable cyclability (∼90% capacitance retention over 10,000 cycles) make the thin-film ideal for practical supercapacitor devices.

  1. Synthesis and characterization of cobalt doped nickel oxide thin films by spray pyrolysis method

    Science.gov (United States)

    Sathisha, D.; Naik, K. Gopalakrishna

    2018-05-01

    Cobalt (Co) doped nickel oxide (NiO) thin films were deposited on glass substrates at a temperature of about 400 °C by spray pyrolysis method. The effect of Co doping concentration on structural, optical and compositional properties of NiO thin films was investigated. X-ray diffraction result shows that the deposited thin films are polycrystalline in nature. Surface morphologies of the deposited thin films were observed by FESEM and AFM. EDS spectra showed the incorporation of Co dopants in NiO thin films. Optical properties of the grown thin films were characterized by UV-visible spectroscopy. It was found that the optical band gap energy and transmittance of the films decrease with increasing Co doping concentration.

  2. Geometric structures of thin film: Pt on Pd(110) and NiO on Ni(100)

    Energy Technology Data Exchange (ETDEWEB)

    Warren, Oden L. [Iowa State Univ., Ames, IA (United States)

    1993-07-01

    This thesis is divided into 3 papers: dynamical low-energy electron- diffraction investigation of lateral displacements in topmost layer of Pd(110); determination of (1x1) and (1x2) structures of Pt thin films on Pd(110) by dynamical low-energy electron-diffraction analysis; and structural determination of a NiO(111) film on Ni(100) by dynamical low-energy electron-diffraction analysis.

  3. An investigation of fatigue in LIGA Ni MEMS thin films

    International Nuclear Information System (INIS)

    Allameh, S.M.; Lou, J.; Kavishe, F.; Buchheit, T.; Soboyejo, W.O.

    2004-01-01

    This paper presents results of an experimental study of fatigue in LIGA Ni micro-electro-mechanical systems (MEMS)/thin films produced by electroplating from a sulfamate bath at a current density of 50 mA/cm 2 . Following a brief description of microstructure and micro-tensile properties, the results of stress-life (S-N) experiments are presented for specimens with thicknesses of 70 and 270 μm. Specimens with the thicker cross-sections (270 μm thick) are shown to have comparable fatigue resistance to annealed bulk Ni in the as-plated condition. The thinner specimens (70 μm thick) have comparable fatigue resistance to hardened Ni, and better fatigue resistance than the thicker samples. The underlying fatigue fracture modes are elucidated via scanning electron microscopy. The implications of the results are then discussed for the failure analysis of LIGA Ni MEMS structures

  4. Coercivity scaling in antidot lattices in Fe, Ni, and NiFe thin films

    Energy Technology Data Exchange (ETDEWEB)

    Gräfe, Joachim, E-mail: graefe@is.mpg.de; Schütz, Gisela; Goering, Eberhard J., E-mail: goering@is.mpg.de

    2016-12-01

    Antidot lattices can be used to artificially engineer magnetic properties in thin films, however, a conclusive model that describes the coercivity enhancement in this class of magnetic nano-structures has so far not been found. We prepared Fe, Ni, and NiFe thin films and patterned each with 21 square antidot lattices with different geometric parameters and measured their hysteretic behavior. On the basis of this extensive dataset we are able to provide a model that can describe both the coercivity scaling over a wide range of geometric lattice parameters and the influence of different materials.

  5. FABRICATION OF Cu-Al-Ni SHAPE MEMORY THIN FILM BY THERMAL EVOPRATION

    OpenAIRE

    Özkul, İskender; Canbay, Canan Aksu; Tekataş, Ayşe

    2017-01-01

    Among the functional, materials shape memory alloysare important because of their unique properties. So, these materials haveattracted more attention to be used in micro/nano electronic andelectromechanic systems. In this work, thermal evaporation method has been usedto produce CuAlNi shape memory alloy thin film. The produced CuAlNi thin filmhas been characterized and the presence of the martensite phase wasinvestigated and compared with the CuAlNi alloy sample. CuAlNi shape memoryalloy thin...

  6. Effect of Precursor Concentration on Structural Optical and Electrical Properties of NiO Thin Films Prepared by Spray Pyrolysis

    Directory of Open Access Journals (Sweden)

    Rafia Barir

    2017-01-01

    Full Text Available Undoped nickel oxide (NiO thin films were deposited on 500°C heated glass substrates using spray pyrolysis method at (0.015–0.1 M range of precursor. The latter was obtained by decomposition of nickel nitrate hexahydrate in double distilled water. Effect of precursor concentration on structural, optical, and electrical properties of NiO thin films was investigated. X-ray diffraction (XRD shows the formation of NiO under cubic structure with single diffraction peak along (111 plane at 2θ=37.24°. When precursor concentration reaches 0.1 M, an increment in NiO crystallite size over 37.04 nm was obtained indicating the product nano structure. SEM images reveal that beyond 0.04 M as precursor concentration the substrate becomes completely covered with NiO and thin films exhibit formation of nano agglomerations at the top of the sample surface. Ni-O bonds vibrations modes in the product of films were confirmed by FT-IR analysis. Transparency of the films ranged from 57 to 88% and band gap energy of the films decreases from 3.68 to 3.60 eV with increasing precursor concentration. Electrical properties of the elaborated NiO thin films were correlated to the precursor concentration.

  7. Anisotropic ferromagnetic behaviors in highly orientated epitaxial NiO-based thin films

    Directory of Open Access Journals (Sweden)

    Yu-Jun Zhang

    2015-07-01

    Full Text Available Antiferromagnetic materials attract a great amount of attention recently for promising antiferromagnet-based spintronics applications. NiO is a conventional antiferromagnetic semiconductor material and can show ferromagnetism by doping other magnetic elements. In this work, we synthesized epitaxial Fe-doped NiO thin films on SrTiO3 substrates with various crystal orientations by pulsed laser deposition. The room-temperature ferromagnetism of these films is anisotropic, including the saturated magnetization and the coercive field. The anisotropic magnetic behaviors of Fe-doped NiO diluted magnetic oxide system should be closely correlated to the magnetic structure of antiferromagnetic NiO base. Within the easy plane of NiO, the coercive field of the films becomes smaller, and larger coercive field while tested out of the easy plane of NiO. The saturated magnetization anisotropy is due to different strain applied by different substrates. These results lead us to more abundant knowledge of the exchange interactions in this conventional antiferromagnetic system.

  8. Crystallization and growth of Ni-Si alloy thin films on inert and on silicon substrates

    Science.gov (United States)

    Grimberg, I.; Weiss, B. Z.

    1995-04-01

    The crystallization kinetics and thermal stability of NiSi2±0.2 alloy thin films coevaporated on two different substrates were studied. The substrates were: silicon single crystal [Si(100)] and thermally oxidized silicon single crystal. In situ resistance measurements, transmission electron microscopy, x-ray diffraction, Auger electron spectroscopy, and Rutherford backscattering spectroscopy were used. The postdeposition microstructure consisted of a mixture of amorphous and crystalline phases. The amorphous phase, independent of the composition, crystallizes homogeneously to NiSi2 at temperatures lower than 200 °C. The activation energy, determined in the range of 1.4-2.54 eV, depends on the type of the substrate and on the composition of the alloyed films. The activation energy for the alloys deposited on the inert substrate was found to be lower than for the alloys deposited on silicon single crystal. The lowest activation energy was obtained for nonstoichiometric NiSi2.2, the highest for NiSi2—on both substrates. The crystallization mode depends on the structure of the as-deposited films, especially the density of the existing crystalline nuclei. Substantial differences were observed in the thermal stability of the NiSi2 compound on both substrates. With the alloy films deposited on the Si substrate, only the NiSi2 phase was identified after annealing to temperatures up to 800 °C. In the films deposited on the inert substrate, NiSi and NiSi2 phases were identified when the Ni content in the alloy exceeded 33 at. %. The effects of composition and the type of substrate on the crystallization kinetics and thermal stability are discussed.

  9. Effect of copper concentration on the physical properties of copper doped NiO thin films deposited by spray pyrolysis

    Energy Technology Data Exchange (ETDEWEB)

    Mani Menaka, S., E-mail: manimenaka.phy@gmail.com [PG and Research Department of Physics, Government Arts College, Coimbatore, 641018, Tamilnadu (India); Umadevi, G. [PG and Research Department of Physics, Government Arts College, Coimbatore, 641018, Tamilnadu (India); Manickam, M. [SRMV College of Arts and Science, Coimbatore, 641020, Tamilnadu (India)

    2017-04-15

    The spray pyrolysis (SP) technique is an important and powerful method for the preparation of nickel oxide (NiO) and copper-doped nickel oxide thin films. The best films were obtained when the substrate temperature, T{sub s} = 450 °C on glass substrates. Copper (Cu) concentrations in the films were varied from 0 to 8%. The effect of Cu concentration on the structural, morphological, spectral, optical, and electrical properties of the thin films were studied by X-ray diffraction (XRD), Scanning electron microscopy (SEM), Fourier transformed infrared spectroscopy (FTIR), UV–vis–NIR spectrophotometer, Hot probe and Hall system. The X-ray diffraction result shows the polycrystalline cubic structure of sprayed films with (200) preferred orientation. The variations of the structural parameters such as lattice parameters and grain sizes were investigated. The SEM image displays the surface morphology of the NiO and Cu:NiO thin films. The FTIR of the as-deposited films were associated with chemical identification. The optical transmittance and absorbance spectra of the films were measured by UV–vis–NIR spectrophotometer. The absorption coefficient and band gaps of the films were calculated using the optical method. All the NiO and Cu:NiO films were p-type. The resistivity of the above films decreases with the increase in copper concentration and so the conductivity of the films depend on the precursor concentration. - Highlights: • Pure and Cu:NiO films were deposited by Spray pyrolysis technique. • The XRD result shows the polycrystalline nature of pure and Cu:NiO films. • The formation of pure and Cu:NiO were confirmed by FTIR analysis. • Band gap values of pure and Cu:NiO decreases. • All the pure and Cu:NiO films were p-type.

  10. Effect of copper concentration on the physical properties of copper doped NiO thin films deposited by spray pyrolysis

    International Nuclear Information System (INIS)

    Mani Menaka, S.; Umadevi, G.; Manickam, M.

    2017-01-01

    The spray pyrolysis (SP) technique is an important and powerful method for the preparation of nickel oxide (NiO) and copper-doped nickel oxide thin films. The best films were obtained when the substrate temperature, T_s = 450 °C on glass substrates. Copper (Cu) concentrations in the films were varied from 0 to 8%. The effect of Cu concentration on the structural, morphological, spectral, optical, and electrical properties of the thin films were studied by X-ray diffraction (XRD), Scanning electron microscopy (SEM), Fourier transformed infrared spectroscopy (FTIR), UV–vis–NIR spectrophotometer, Hot probe and Hall system. The X-ray diffraction result shows the polycrystalline cubic structure of sprayed films with (200) preferred orientation. The variations of the structural parameters such as lattice parameters and grain sizes were investigated. The SEM image displays the surface morphology of the NiO and Cu:NiO thin films. The FTIR of the as-deposited films were associated with chemical identification. The optical transmittance and absorbance spectra of the films were measured by UV–vis–NIR spectrophotometer. The absorption coefficient and band gaps of the films were calculated using the optical method. All the NiO and Cu:NiO films were p-type. The resistivity of the above films decreases with the increase in copper concentration and so the conductivity of the films depend on the precursor concentration. - Highlights: • Pure and Cu:NiO films were deposited by Spray pyrolysis technique. • The XRD result shows the polycrystalline nature of pure and Cu:NiO films. • The formation of pure and Cu:NiO were confirmed by FTIR analysis. • Band gap values of pure and Cu:NiO decreases. • All the pure and Cu:NiO films were p-type.

  11. Structural, electrical and magnetic properties of evaporated Ni/Cu and Ni/glass thin films

    Energy Technology Data Exchange (ETDEWEB)

    Nacereddine, C. [Departement de Physique, Universite Ferhat Abbas, Setif 19000 (Algeria); Layadi, A. [Departement de Physique, Universite Ferhat Abbas, Setif 19000 (Algeria)]. E-mail: A_Layadi@yahoo.fr; Guittoum, A. [Centre de Recherche Nucleaire d' Alger (CRNA), Alger 16000 (Algeria); Cherif, S.-M. [Laboratoire PMTM, Institut Galilee, Univeriste Paris 13, Villetaneuse 93340 (France); Chauveau, T. [Laboratoire PMTM, Institut Galilee, Univeriste Paris 13, Villetaneuse 93340 (France); Billet, D. [Laboratoire PMTM, Institut Galilee, Univeriste Paris 13, Villetaneuse 93340 (France); Youssef, J. Ben [Laboratoire de Magnetisme de Bretagne, U.B.O., Brest 29238 (France); Bourzami, A. [Departement de Physique, Universite Ferhat Abbas, Setif 19000 (Algeria); Bourahli, M.-H. [Departement d' O. M. P., Universite Ferhat Abbas, Setif 19000 (Algeria)

    2007-01-25

    The structural, electrical and magnetic properties of Ni thin films evaporated onto glass and polycrystalline Cu substrates have been investigated. The Ni thickness ranges from 31 to 165 nm. X-ray diffraction (XRD), scanning electron microscopy (SEM) and atomic force microscopy (AFM) have been used to study the structure and morphology of these systems. The Ni/Cu and Ni/glass thin films are found to be polycrystalline with a (1 1 1) texture. There is an overall increase of the grain size with increasing thickness. A negative strain was noted indicating that all the samples are under a compressive stress. Diffusion at the grain boundaries seems to be a major contribution to the electrical resistivity in this thickness range. Study of the hysteresis curves, obtained by vibrating sample magnetometer (VSM), indicates that all samples are characterized by an in-plane magnetization easy axis. Higher in-plane coercive fields seem to be associated with higher grain size, indicating that coercivity may be due to nucleation of reverse domains rather than pinning of domain walls. The saturation field and the squareness have been studied as a function of the Ni thickness.

  12. Improvement of in-plane alignment for surface oxidized NiO layer on textured Ni substrate by two-step heat-treatment

    International Nuclear Information System (INIS)

    Hasegawa, Katsuya; Izumi, Toru; Izumi, Teruo; Shiohara, Yuh; Maeda, Toshihiko

    2004-01-01

    Epitaxial growth of NiO on a textured Ni substrate as a template for an REBa 2 Cu 3 O y coated conductor was investigated. Highly in-plane aligned NiO layers were successfully fabricated using a new process of a two-step heat-treatment for oxidation. In the first-step, a highly in-plane aligned thin NiO layer was formed on a textured Ni substrate under a low driving force of oxidation. Then, in the second-step, a thick NiO layer was grown at a higher rate with maintaining its high in-plane grain alignment, as if the first NiO layer acts as a seed crystal layer. Further, growth rates and microstructures of the NiO layers were studied comparatively in the cases with and without the first layer. It was found that the oxidation rate in the case with the first layer was lower than that without the first layer. The microstructure observation revealed that the NiO without the first layer was poly-crystalline with many grain-boundaries. On the other hand, in the case with the first layer, grain-boundaries of the NiO were hardly observed. Hence, the reason for this difference of the growth rate and the microstructure of the NiO layers were discussed in view of a diffusivity path

  13. Microstructural and optical properties of spinel oxide M{sub x}Co{sub 2−x}MnO{sub 4} (M = Ni, Zn or Cu; 0 < x < 1) thin films prepared by inorganic polycondensation and dip-coating methods

    Energy Technology Data Exchange (ETDEWEB)

    Le, Thi Ly; Guillemet-Fritsch, Sophie; Dufour, Pascal; Tenailleau, Christophe, E-mail: tenailleau@chimie.ups-tlse.fr

    2016-08-01

    Spinel oxide nanoparticles of M{sub x}Co{sub 2−x}MnO{sub 4} (M = Ni, Zn, Cu; 0 < x < 1) were prepared at 120 °C by the inorganic polycondensation method. Phase composition and microstructure of each sample powder thus obtained were characterized by X-ray diffraction, X-ray fluorescence and scanning electron microscopy. Nanoparticles are well crystallized and uniformly distributed in both shape and size. Colloidal dispersions were stabilized in a low cost and environmentally friendly solvent solution. Spinel oxide thin films were then deposited on glass substrates by using the dip-coating technique. Their optical properties were measured in the 300–1100 nm wavelength range. Thin films show extremely good absorbance in the ultra-violet and blue regions. The highest absorbance observed in the red region was for x = 0.15 in zinc. A smaller direct band gap was determined when a low amount of doping M element was introduced in the cobalt and manganese spinel oxide material. - Highlights: • Pure complex spinel oxide nanoparticles synthesis at low T • Low cost method used to stabilize colloidal dispersions • Preparation of homogenous light absorber thin films by dip-coating • Adjustable optical properties and band gaps with the dopants.

  14. Improved conductivity of infinite-layer LaNiO2 thin films by metal organic decomposition

    International Nuclear Information System (INIS)

    Ikeda, Ai; Manabe, Takaaki; Naito, Michio

    2013-01-01

    Highlights: •LaNiO 2 films were synthesized by metal organic decomposition and topotactic reduction. •Room-temperature resistivity as low as 0.6 mΩ cm was achieved for infinite-layer LaNiO 2 . •Lattice matched substrates are important in obtaining high conductivity. -- Abstract: Infinite-layer LaNiO 2 thin films were synthesized by metal organic decomposition and subsequent topotactic reduction in hydrogen, and their transport properties were investigated. LaNiO 2 is isostructural to SrCuO 2 , the parent compound of high-T c Sr 0.9 La 0.1 CuO 2 with T c = 44 K, and has 3d 9 configuration, which is very rare in oxides but common to high-T c copper oxides. The bulk synthesis of LaNiO 2 is not easy, but we demonstrate in this article that the thin-film synthesis of LaNiO 2 is rather easy, thanks to a large-surface-to-volume ratio, which makes oxygen diffusion prompt. Our refined synthesis conditions produced highly conducting films of LaNiO 2 . The resistivity of the best film is as low as 640 μΩ cm at 295 K and decreases with temperature down to 230 K but it shows a gradual upturn at lower temperatures

  15. Study of the magnetic anisotropy in Ni/Cu and Ni/glass thin films

    Energy Technology Data Exchange (ETDEWEB)

    Cherif, S.-M. [Laboratoire PMTM, Institut Galilee, Univeriste Paris 13, Villetaneuse, 93340 (France); Layadi, A. [Departement de Physique, Universite Ferhat Abbas, Setif 19000 (Algeria)]. E-mail: a_layadi@yahoo.fr; Ben Youssef, J. [Laboratoire de Magnetisme de Bretagne, U.B.O., Brest 29238 (France); Nacereddine, C. [Departement de Physique, Universite Ferhat Abbas, Setif 19000 (Algeria); Roussigne, Y. [Laboratoire PMTM, Institut Galilee, Univeriste Paris 13, Villetaneuse, 93340 (France)

    2007-01-01

    The magnetic properties of evaporated Ni/Cu and Ni/glass thin films have been investigated by means of the vibrating sample magnetometer (VSM), the Brillouin light scattering (BLS) and magnetic force microscopy (MFM). The Ni thickness, t, ranges from 31 to 165 nm. The second- and fourth-order magnetic anisotropy constants, K {sub 1} and K {sub 2}, have been included; for the Ni/Cu series, K {sub 1} was found to decrease from 1.0x10{sup 6} to 0.18x10{sup 6} erg/cm{sup 3} as t increases from 31 to 165 nm, while K {sub 2} increased from 0.24x10{sup 6} to 0.8x10{sup 6} erg/cm{sup 3}. Over all the thickness range, the magnetization easy axis is in plane. For thinner films, there is a good agreement between anisotropy constant values inferred from VSM and BLS. Stripe domains were observed for t{>=}165 nm in Ni/glass and t{>=}90 nm in Ni/Cu.

  16. Study of the magnetic anisotropy in Ni/Cu and Ni/glass thin films

    International Nuclear Information System (INIS)

    Cherif, S.-M.; Layadi, A.; Ben Youssef, J.; Nacereddine, C.; Roussigne, Y.

    2007-01-01

    The magnetic properties of evaporated Ni/Cu and Ni/glass thin films have been investigated by means of the vibrating sample magnetometer (VSM), the Brillouin light scattering (BLS) and magnetic force microscopy (MFM). The Ni thickness, t, ranges from 31 to 165 nm. The second- and fourth-order magnetic anisotropy constants, K 1 and K 2 , have been included; for the Ni/Cu series, K 1 was found to decrease from 1.0x10 6 to 0.18x10 6 erg/cm 3 as t increases from 31 to 165 nm, while K 2 increased from 0.24x10 6 to 0.8x10 6 erg/cm 3 . Over all the thickness range, the magnetization easy axis is in plane. For thinner films, there is a good agreement between anisotropy constant values inferred from VSM and BLS. Stripe domains were observed for t≥165 nm in Ni/glass and t≥90 nm in Ni/Cu

  17. Ni/Ni-YSZ current collector/anode dual layer hollow fibers for micro-tubular solid oxide fuel cells

    Energy Technology Data Exchange (ETDEWEB)

    Kanawka, K.; Othman, M.H.D.; Droushiotis, N.; Wu, Z.; Kelsall, G.; Li, K. [Department of Chemical Engineering and Chemical Technology, Imperial College London, London SW7 2AZ (United Kingdom)

    2011-10-15

    A co-extrusion technique was employed to fabricate a novel dual layer NiO/NiO-YSZ hollow fiber (HF) precursor which was then co-sintered at 1,400 C and reduced at 700 C to form, respectively, a meshed porous inner Ni current collector and outer Ni-YSZ anode layers for SOFC applications. The inner thin and highly porous ''mesh-like'' pure Ni layer of approximately 50 {mu}m in thickness functions as a current collector in micro-tubular solid oxide fuel cell (SOFC), aiming at highly efficient current collection with low fuel diffusion resistance, while the thicker outer Ni-YSZ layer of 260 {mu}m acts as an anode, providing also major mechanical strength to the dual-layer HF. Achieved morphology consisted of short finger-like voids originating from the inner lumen of the HF, and a sponge-like structure filling most of the Ni-YSZ anode layer, which is considered to be suitable macrostructure for anode SOFC system. The electrical conductivity of the meshed porous inner Ni layer is measured to be 77.5 x 10{sup 5} S m{sup -1}. This result is significantly higher than previous reported results on single layer Ni-YSZ HFs, which performs not only as a catalyst for the oxidation reaction, but also as a current collector. These results highlight the advantages of this novel dual-layer HF design as a new and highly efficient way of collecting current from the lumen of micro-tubular SOFC. (Copyright copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  18. Magneto-thermoelectric effects in NiFe thin films

    Energy Technology Data Exchange (ETDEWEB)

    Schmid, Maximilian

    2015-11-01

    In this thesis magneto-thermoelectric effects are investigated in a systematic way to separate the transverse spin Seebeck effect from other parasitic effects like the anomalous Nernst effect. In contrast to the first studies found in the literature, in NiFe thin films a contribution of the transverse spin Seebeck effect can be excluded. This surprising outcome was crosschecked in a variety of different sample layouts and collaborations with other universities to ensure the validity of these results. In general, this thesis solves a long time discussion about the existence of the transverse spin Seebeck effect in NiFe films and supports the importance of control measurements for the scientific community. Even if such ''negative'' results may not be the award winning ones, new discoveries should be treated with constructive criticism and be checked carefully by the scientific community.

  19. Low temperature interdiffusion in Cu/Ni thin films

    International Nuclear Information System (INIS)

    Lefakis, H.; Cain, J.F.; Ho, P.S.

    1983-01-01

    Interdiffusion in Cu/Ni thin films was studied by means of Auger electron spectroscopy in conjunction with Ar + ion sputter profiling. The experimental conditions used aimed at simulating those of typical chip-packaging fabrication processes. The Cu/Ni couple (from 10 μm to 60 nm thick) was produced by sequential vapor deposition on fused-silica substrates at 360, 280 and 25 0 C in 10 - 6 Torr vacuum. Diffusion anneals were performed between 280 and 405 0 C for times up to 20 min. Such conditions define grain boundary diffusion in the regimes of B- and C-type kinetics. The data were analyzed according to the Whipple-Suzuoka model. Some deviations from the assumptions of this model, as occurred in the present study, are discussed but cannot fully account for the typical data scatter. The grain boundary diffusion coefficients were determined allowing calculation of respective permeation distances. (Auth.)

  20. Preparation and characterization of Eosin B- and Erythrosin J-sensitized nanostructured NiO thin film photocathodes

    Energy Technology Data Exchange (ETDEWEB)

    Vera, F. [Instituto de Quimica, Universidad Catolica de Valparaiso, Valparaiso (Chile); Schrebler, R. [Instituto de Quimica, Universidad Catolica de Valparaiso, Valparaiso (Chile); Munoz, E. [Instituto de Quimica, Universidad Catolica de Valparaiso, Valparaiso (Chile); Suarez, C. [Instituto de Quimica, Universidad Catolica de Valparaiso, Valparaiso (Chile); Cury, P. [Instituto de Quimica, Universidad Catolica de Valparaiso, Valparaiso (Chile); Gomez, H. [Instituto de Quimica, Universidad Catolica de Valparaiso, Valparaiso (Chile); Cordova, R. [Instituto de Quimica, Universidad Catolica de Valparaiso, Valparaiso (Chile); Marotti, R.E. [Instituto de Fisica, Facultad de Ingenieria, Universidad de la Republica, Herrera y Reissig 565, C.C. 30, 11000 Montevideo (Uruguay); Dalchiele, E.A. [Instituto de Fisica, Facultad de Ingenieria, Universidad de la Republica, Herrera y Reissig 565, C.C. 30, 11000 Montevideo (Uruguay)]. E-mail: dalchiel@fing.edu.uy

    2005-11-01

    Nickel oxide (NiO) thin films were prepared onto ITO/glass substrates by spin-coating, dipping and electrochemically. Studies of the morphological and structural properties of the films were done by atomic force microscopy (AFM). Photoelectrochemical and optical experiments were carried out in order to characterize the semiconductor properties of the nanostructured NiO thin films. The experiments were also done for Eosin B- and Erythrosin J-sensitized nanostructured NiO films, with the aim to visualize their potential application as photocatodes in tandem dye-sensitized solar cells (TDSSC). The NiO grown by dipping was the one presenting the best morphological properties. The photoelectrochemical results for all the bare NiO, NiO-Eosin B and NiO-Erythrosin J/electrolyte (I{sub 2}/I{sup -}) systems showed a p-type behavior. An enhancement in the photocurrent has been observed for the systems sensitized with the dyes. For the NiO/Erythrosin J system the enhancement of the current under illumination in comparison to the dark current was about 200%.

  1. Preparation and characterization of Eosin B- and Erythrosin J-sensitized nanostructured NiO thin film photocathodes

    International Nuclear Information System (INIS)

    Vera, F.; Schrebler, R.; Munoz, E.; Suarez, C.; Cury, P.; Gomez, H.; Cordova, R.; Marotti, R.E.; Dalchiele, E.A.

    2005-01-01

    Nickel oxide (NiO) thin films were prepared onto ITO/glass substrates by spin-coating, dipping and electrochemically. Studies of the morphological and structural properties of the films were done by atomic force microscopy (AFM). Photoelectrochemical and optical experiments were carried out in order to characterize the semiconductor properties of the nanostructured NiO thin films. The experiments were also done for Eosin B- and Erythrosin J-sensitized nanostructured NiO films, with the aim to visualize their potential application as photocatodes in tandem dye-sensitized solar cells (TDSSC). The NiO grown by dipping was the one presenting the best morphological properties. The photoelectrochemical results for all the bare NiO, NiO-Eosin B and NiO-Erythrosin J/electrolyte (I 2 /I - ) systems showed a p-type behavior. An enhancement in the photocurrent has been observed for the systems sensitized with the dyes. For the NiO/Erythrosin J system the enhancement of the current under illumination in comparison to the dark current was about 200%

  2. P-channel transparent thin-film transistor using physical-vapor-deposited NiO layer

    Science.gov (United States)

    Lin, Chiung-Wei; Chung, Wei-Chieh; Zhang, Zhao-De; Hsu, Ming-Chih

    2018-01-01

    The effect of oxygen (O) content on the electrical properties of physical-vapor-deposited nickel oxide (PVD-NiO) was studied. When the NiO target was sputtered, introducing O2 can lead to the formation of Ni3+ ions in the deposited film. These Ni3+ ions can act as acceptors. However, there were too many Ni3+ ions that were obtained following the introduction of O atoms. It resulted in intensive p-type conduction and made the O2-introduced PVD-NiO behave as a conductor. Thus, it was possible to reduce the O content of PVD-NiO to obtain a p-type semiconductor. In this study, a transparent PVD-NiO film with a carrier concentration of 1.62 × 1017 cm-3 and a resistivity of 3.74 Ω cm was sputter-deposited within pure argon plasma. The thin-film transistor (TFT) employing this proposed PVD-NiO can result in good current switching, and even operated at very low drain-source voltage. The ON/OFF current ratio, field-effect carrier mobility, and threshold voltage of the proposed NiO TFT were 3.61 × 104, 1.09 cm2 V-1 s-1 and -3.31 V, respectively.

  3. Preparation of ZrO2 thin films by CVD using H2-CO2 as oxidizer. H2-CO2 wo sanka gas ni mochiita CVD ho ni yoru ZrO2 maku no sakusei

    Energy Technology Data Exchange (ETDEWEB)

    Aizawa, M; Kobayashi, C [Toto Ltd., Kitakyushu (Japan); Yamane, H; Hirai, T [Tohoku University, Sendai (Japan). Institute for Materials Research

    1993-02-01

    This report describes an outline on the results of investigation on the formation of ZrO2 films from [beta]-diketone chelate of Zr using H2/CO2 as oxidizing gas by application of the CVD method at a temperature as high as 1000[degree]C. The deposition rate is 4[mu]m/h at 650[degree]C, increases with rise of temperature and reaches 10[mu]m/h at 900-1000[degree]C. No lowering of the rate at high temperature seems to be caused by temperature dependence of water (increase of water concentration above 850[degree]C). The physical form of ZrO2 is black and amorphous at 650[degree]C; grey and tetragonal at 850[degree]C; white, monoclinic and tetragonal at 950-1000[degree]C. All of these films showed a fine-grain, polycrystalline structure at any temperature and became white by heat-treatment at 1100[degree]C for 100h. This treatment gave no change to amorphous films but transformed tetragonal films and the mixture films of tetragonal and monoclinic crystals into white monoclinic Zr films. This may be because oxygen defects were present in black and grey films of low deposition temperature due to insufficient oxydation of raw material by H2O. Instability of tetragonal crystals seems to be attributed to participation of oxygen defects. In conclusion, possibility of high-temperature film formation was confirmed. 17 refs., 4 figs.

  4. Kinetics of Ni:C Thin Film Composition Formation at Different Temperatures and Fluxes

    Directory of Open Access Journals (Sweden)

    Gediminas KAIRAITIS

    2013-09-01

    Full Text Available In this work analysis considering Ni:C thin films growth on thermaly oxidized Si substrate by proposed kinetic model is presented. Model is built considering experimental results where microstructure evolution as a function of the substrate temperature and metal content of Ni:C nanocomposite films grown by hyperthermal ion deposition is investigated. The proposed kinetic model is based on the rate equations and includes processes of adsorption, surface segregation, diffusion, chemical reactions of constituents. The experimental depth profile curves were fitted by using proposed model. The obtained results show a good agreement with experiment taking into account concentration dependent diffusion. It is shown by modeling that with the increase of substrate temperature the process of nickel surface segregation becomes most important. DOI: http://dx.doi.org/10.5755/j01.ms.19.3.5234

  5. An investigation of the oxidized Ni/InAs interface

    International Nuclear Information System (INIS)

    Venter, A.; Botha, J.R.; Swart, H.C.; Naidoo, S.; Olivier, E.J.

    2009-01-01

    Ni was resistively deposited onto bulk InAs and subsequently oxidized in an O 2 atmosphere. The anneal temperature and time were 450 deg. C and 2.5 h, respectively. X-ray diffraction of the oxidized Ni/InAs sample revealed the formation of In 3 Ni 2 and In 2 O 3 on the front suggesting inter diffusion of In, Ni and O. NiO was not detected by X-ray diffraction. In a preliminary study, using glass as a substrate, NiO readily formed when using these oxidation parameters. Conductivity measurements of the oxidized Ni/InAs surface revealed a conducting front and insulating rear surface while TEM of the Ni/InAs interface revealed an intermediate amorphous diffusion zone between the 'oxidized' Ni layer and the bulk InAs. A closer investigation of the intermediate layer supports the X-ray diffraction results, suggesting compound formation due to diffusion of oxygen and nickel into the substrate, and out-diffusion of In and As from the bulk of the sample. AES was used to further elucidate these results.

  6. An investigation of the oxidized Ni/InAs interface

    Energy Technology Data Exchange (ETDEWEB)

    Venter, A., E-mail: andre.venter@nmmu.ac.z [Department of Physics, Nelson Mandela Metropolitan University, PO Box 77000, Port Elizabeth 6031 (South Africa); Botha, J.R. [Department of Physics, Nelson Mandela Metropolitan University, PO Box 77000, Port Elizabeth 6031 (South Africa); Swart, H.C. [Department of Physics, University of the Free State, PO Box 339, Bloemfontein 9300 (South Africa); Naidoo, S.; Olivier, E.J. [Department of Physics, Nelson Mandela Metropolitan University, PO Box 77000, Port Elizabeth 6031 (South Africa)

    2009-12-01

    Ni was resistively deposited onto bulk InAs and subsequently oxidized in an O{sub 2} atmosphere. The anneal temperature and time were 450 deg. C and 2.5 h, respectively. X-ray diffraction of the oxidized Ni/InAs sample revealed the formation of In{sub 3}Ni{sub 2} and In{sub 2}O{sub 3} on the front suggesting inter diffusion of In, Ni and O. NiO was not detected by X-ray diffraction. In a preliminary study, using glass as a substrate, NiO readily formed when using these oxidation parameters. Conductivity measurements of the oxidized Ni/InAs surface revealed a conducting front and insulating rear surface while TEM of the Ni/InAs interface revealed an intermediate amorphous diffusion zone between the 'oxidized' Ni layer and the bulk InAs. A closer investigation of the intermediate layer supports the X-ray diffraction results, suggesting compound formation due to diffusion of oxygen and nickel into the substrate, and out-diffusion of In and As from the bulk of the sample. AES was used to further elucidate these results.

  7. Effects of accelerated degradation on metal supported thin film-based solid oxide fuel cell

    DEFF Research Database (Denmark)

    Reolon, R. P.; Sanna, S.; Xu, Yu

    2018-01-01

    A thin film-based solid oxide fuel cell is deposited on a Ni-based metal porous support by pulsed laser deposition with a multi-scale-graded microstructure design. The fuel cell, around 1 μm in thickness, is composed of a stabilized-zirconia/doped-ceria bi-layered dense electrolyte and nanostruct......A thin film-based solid oxide fuel cell is deposited on a Ni-based metal porous support by pulsed laser deposition with a multi-scale-graded microstructure design. The fuel cell, around 1 μm in thickness, is composed of a stabilized-zirconia/doped-ceria bi-layered dense electrolyte......, electrochemical performances are steady, indicating the stability of the cell. Under electrical load, a progressive degradation is activated. Post-test analysis reveals both mechanical and chemical degradation of the cell. Cracks and delamination of the thin films promote a significant nickel diffusion and new...

  8. Growth and surface morphology of ion-beam sputtered Ti-Ni thin films

    International Nuclear Information System (INIS)

    Rao, Ambati Pulla; Sunandana, C.S.

    2008-01-01

    Titanium-nickel thin films have been deposited on float glass substrates by ion beam sputtering in 100% pure argon atmosphere. Sputtering is predominant at energy region of incident ions, 1000 eV to 100 keV. The as-deposited films were investigated by X-ray photoelectron spectroscopy (XPS) and atomic force microscope (AFM). In this paper we attempted to study the surface morphology and elemental composition through AFM and XPS, respectively. Core level as well as valence band spectra of ion-beam sputtered Ti-Ni thin films at various Ar gas rates (5, 7 and 12 sccm) show that the thin film deposited at 3 sccm possess two distinct peaks at binding energies 458.55 eV and 464.36 eV mainly due to TiO 2 . Upon increasing Ar rate oxidation of Ti-Ni is reduced and the Ti-2p peaks begin approaching those of pure elemental Ti. Here Ti-2p peaks are observed at binding energy positions of 454.7 eV and 460.5 eV. AFM results show that the average grain size and roughness decrease, upon increasing Ar gas rate, from 2.90 μm to 0.096 μm and from 16.285 nm to 1.169 nm, respectively

  9. Oxidation of hydrogen peroxide by [Ni III (cyclam)

    Indian Academy of Sciences (India)

    The kinetics of oxidation of H2O2 by [NiIII(cyclam)]3+, [NiIIIL1], was studied in aqueous acidic media at 25°C and I = 0.5M (NaClO4). The [NiIIIL1] to [NiIIL1] reduction was found to be fast in the presence of Cu(II) ion than the oxidation of the cyclam ligand by ·OH. The rate constant showed an inverse acid dependence on H+ ...

  10. Biocorrosion investigation of two shape memory nickel based alloys: Ni-Mn-Ga and thin film NiTi.

    Science.gov (United States)

    Stepan, L L; Levi, D S; Gans, E; Mohanchandra, K P; Ujihara, M; Carman, G P

    2007-09-01

    Thin film nitinol and single crystal Ni-Mn-Ga represent two new shape memory materials with potential to be used as percutaneously placed implant devices. However, the biocompatibility of these materials has not been adequately assessed. Immersion tests were conducted on both thin film nitinol and single crystal Ni-Mn-Ga in Hank's balanced salt solution at 37 degrees C and pH 7.4. After 12 h, large pits were found on the Ni-Mn-Ga samples while thin film nitinol displayed no signs of corrosion. Further electrochemical tests on thin film nitinol samples revealed breakdown potentials superior to a mechanically polished nitinol disc. These results suggest that passivation or electropolishing of thin film nitinol maybe unnecessary to promote corrosion resistance.

  11. Improved conductivity of infinite-layer LaNiO2 thin films by metal organic decomposition

    Science.gov (United States)

    Ikeda, Ai; Manabe, Takaaki; Naito, Michio

    2013-12-01

    Infinite-layer LaNiO2 thin films were synthesized by metal organic decomposition and subsequent topotactic reduction in hydrogen, and their transport properties were investigated. LaNiO2 is isostructural to SrCuO2, the parent compound of high-Tc Sr0.9La0.1CuO2 with Tc = 44 K, and has 3d9 configuration, which is very rare in oxides but common to high-Tc copper oxides. The bulk synthesis of LaNiO2 is not easy, but we demonstrate in this article that the thin-film synthesis of LaNiO2 is rather easy, thanks to a large-surface-to-volume ratio, which makes oxygen diffusion prompt. Our refined synthesis conditions produced highly conducting films of LaNiO2. The resistivity of the best film is as low as 640 μΩ cm at 295 K and decreases with temperature down to 230 K but it shows a gradual upturn at lower temperatures.

  12. Magnetic domains in Ni-Mn-Ga martensitic thin films

    International Nuclear Information System (INIS)

    Chernenko, V A; Anton, R Lopez; Kohl, M; Ohtsuka, M; Orue, I; Barandiaran, J M

    2005-01-01

    A series of martensitic Ni 52 Mn 24 Ga 24 thin films deposited on alumina ceramic substrates has been prepared by using RF(radio-frequency) magnetron sputtering. The film thickness, d, varies from 0.1 to 5.0m. Magnetic domain patterns have been imaged by the MFM (magnetic force microscopy) technique. A maze domain structure is found for all studied films. MFM shows a large out-of-plane magnetization component and a rather uniform domain width for each film thickness. The domain width, δ, depends on the film thickness as δ∝√d in the whole studied range of film thickness. This dependence is the expected one for magnetic anisotropy and magnetostatic contributions in a perpendicular magnetic domain configuration. The proportionality coefficient is also consistent with the values of saturation magnetization and magnetic anisotropy determined in the samples

  13. Self-consistent studies of magnetic thin film Ni (001)

    International Nuclear Information System (INIS)

    Wang, C.S.; Freeman, A.J.

    1979-01-01

    Advances in experimental methods for studying surface phenomena have provided the stimulus to develop theoretical methods capable of interpreting this wealth of new information. Of particular interest have been the relative roles of bulk and surface contributions since in several important cases agreement between experiment and bulk self-consistent (SC) calculations within the local spin density functional formalism (LSDF) is lacking. We discuss our recent extension of the (LSDF) approach to the study of thin films (slabs) and the role of surface effects on magnetic properties. Results are described for Ni (001) films using our new SC numerical basis set LCAO method. Self-consistency within the superposition of overlapping spherical atomic charge density model is obtained iteratively with the atomic configuration as the adjustable parameter. Results are presented for the electronic charge densities and local density of states. The origin and role of (magnetic) surface states is discussed by comparison with results of earlier bulk calculations

  14. Surface chemistry and cytotoxicity of reactively sputtered tantalum oxide films on NiTi plates

    Energy Technology Data Exchange (ETDEWEB)

    McNamara, K. [Materials and Surface Science Institute, University of Limerick, Limerick (Ireland); Department of Physics & Energy, University of Limerick, Limerick (Ireland); Kolaj-Robin, O.; Belochapkine, S.; Laffir, F. [Materials and Surface Science Institute, University of Limerick, Limerick (Ireland); Gandhi, A.A. [Materials and Surface Science Institute, University of Limerick, Limerick (Ireland); Department of Physics & Energy, University of Limerick, Limerick (Ireland); Tofail, S.A.M., E-mail: tofail.syed@ul.ie [Materials and Surface Science Institute, University of Limerick, Limerick (Ireland); Department of Physics & Energy, University of Limerick, Limerick (Ireland)

    2015-08-31

    NiTi, an equiatomic alloy containing nickel and titanium, exhibits unique properties such as shape memory effect and superelasticity. NiTi also forms a spontaneous protective titanium dioxide (TiO{sub 2}) layer that allows its use in biomedical applications. Despite the widely perceived biocompatibility there remain some concerns about the sustainability of the alloy's biocompatibility due to the defects in the TiO{sub 2} protective layer and the presence of high amount of sub-surface Ni, which can give allergic reactions. Many surface treatments have been investigated to try to improve both the corrosion resistance and biocompatibility of this layer. For such purposes, we have sputter deposited tantalum (Ta) oxide thin films onto the surface of the NiTi alloy. Despite being one of the promising metals for biomedical applications, Ta, and its various oxides and their interactions with cells have received relatively less attention. The oxidation chemistry, crystal structure, morphology and biocompatibility of these films have been investigated. In general, reactive sputtering especially in the presence of a low oxygen mixture yields a thicker film with better control of the film quality. The sputtering power influenced the surface oxidation states of Ta. Both microscopic and quantitative cytotoxicity measurements show that Ta films on NiTi are biocompatible with little to no variation in cytotoxic response when the surface oxidation state of Ta changes. - Highlights: • Reactive sputtering in low oxygen mixture yields thicker better quality films. • Sputtering power influenced surface oxidation states of Ta. • Cytotoxicity measurements show Ta films on NiTi are biocompatible. • Little to no variation in cytotoxic response when oxidation state changes.

  15. Magnetic Properties of FeNi-Based Thin Film Materials with Different Additives

    Directory of Open Access Journals (Sweden)

    Cai Liang

    2014-07-01

    Full Text Available This paper presents a study of FeNi-based thin film materials deposited with Mo, Al and B using a co-sputtering process. The existence of soft magnetic properties in combination with strong magneto-mechanical coupling makes these materials attractive for sensor applications. Our findings show that FeNi deposited with Mo or Al yields magnetically soft materials and that depositing with B further increases the softness. The out-of-plane magnetic anisotropy of FeNi thin films is reduced by depositing with Al and completely removed by depositing with B. The effect of depositing with Mo is dependent on the Mo concentration. The coercivity of FeNiMo and FeNiAl is reduced to less than a half of that of FeNi, and a value as low as 40 A/m is obtained for FeNiB. The surfaces of the obtained FeNiMo, FeNiAl and FeNiB thin films reveal very different morphologies. The surface of FeNiMo shows nano-cracks, while the FeNiAl films show large clusters and fewer nano-cracks. When FeNi is deposited with B, a very smooth morphology is obtained. The crystal structure of FeNiMo strongly depends on the depositant concentration and changes into an amorphous structure at a higher Mo level. FeNiAl thin films remain polycrystalline, even at a very high concentration of Al, and FeNiB films are amorphous, even at a very low concentration of B.

  16. Magnetic properties of FeNi-based thin film materials with different additives

    KAUST Repository

    Liang, C.

    2014-07-04

    This paper presents a study of FeNi-based thin film materials deposited with Mo, Al and B using a co-sputtering process. The existence of soft magnetic properties in combination with strong magneto-mechanical coupling makes these materials attractive for sensor applications. Our findings show that FeNi deposited with Mo or Al yields magnetically soft materials and that depositing with B further increases the softness. The out-of-plane magnetic anisotropy of FeNi thin films is reduced by depositing with Al and completely removed by depositing with B. The effect of depositing with Mo is dependent on the Mo concentration. The coercivity of FeNiMo and FeNiAl is reduced to less than a half of that of FeNi, and a value as low as 40 A/m is obtained for FeNiB. The surfaces of the obtained FeNiMo, FeNiAl and FeNiB thin films reveal very different morphologies. The surface of FeNiMo shows nano-cracks, while the FeNiAl films show large clusters and fewer nano-cracks. When FeNi is deposited with B, a very smooth morphology is obtained. The crystal structure of FeNiMo strongly depends on the depositant concentration and changes into an amorphous structure at a higher Mo level. FeNiAl thin films remain polycrystalline, even at a very high concentration of Al, and FeNiB films are amorphous, even at a very low concentration of B. 2014 by the authors.

  17. Fabrication and magnetization measurement of Ni thin films on silicon substrate by electrodeposition

    Energy Technology Data Exchange (ETDEWEB)

    Tang Yang [Key Laboratory of Excited State Process, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, 16 East Nan-Hu Road, Open Economic Zone, Changchun 130033 (China); Graduate School of the Chinese Academy of Sciences (China); Zhao Dongxu [Key Laboratory of Excited State Process, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, 16 East Nan-Hu Road, Open Economic Zone, Changchun 130033 (China)], E-mail: dxzhao2000@yahoo.com.cn; Shen Dezhen; Zhang Jiying; Li Binghui; Lu Youming; Fan Xiwu [Key Laboratory of Excited State Process, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, 16 East Nan-Hu Road, Open Economic Zone, Changchun 130033 (China)

    2008-02-29

    Ni thin films were electrodeposited on n-Si (100) substrate from the electrolytes containing Ni(CH{sub 3}COO){sub 2} and CH{sub 3}COONH{sub 4} at room temperature. The scanning electron microscope images of the films reveals the uniform distribution of the nickel all over the substrate surface, which illustrates that the fine Ni films on large scales could be obtained through the method of electrodeposition. Vibrating sample magnetometer measurement with the applied field parallel to the surface shows obvious hysteresis loops of the magnetic thin films. The morphology and magnetism of the Ni thin films evolves with the deposition time increasing. The effect of deposition conditions on the properties of the Ni thin films is investigated.

  18. In Situ Characterization of Ni and Ni/Fe Thin Film Electrodes for Oxygen Evolution in Alkaline Media by a Raman-Coupled Scanning Electrochemical Microscope Setup.

    Science.gov (United States)

    Steimecke, Matthias; Seiffarth, Gerda; Bron, Michael

    2017-10-17

    We present a spectroelectrochemical setup, in which Raman microscopy is combined with scanning electrochemical microscopy (SECM) in order to provide both spectroscopic and electrochemical information on the very same location of an electrode at the same time. The setup is applied to a subject of high academic and practical interest, namely, the oxygen evolution reaction at Ni and Ni/Fe electrodes. It comprises a transparent substrate electrode, onto which Ni and Ni/Fe thin films are deposited. An ultramicroelectrode (UME) is placed closely above the substrate to obtain electrochemical information, while a Raman microscope probes the same sample spot from below. To obtain information on oxygen evolution activity and structural changes, increasingly positive potentials from 0.1 up to 0.7 V vs Hg|HgO|1 M KOH were applied to the Ni/Fe-electrodes in 0.1 M KOH solution. Evolved oxygen is detected by reduction at a Pt UME, allowing for the determination of onset potentials, while the substrate current, which is recorded in parallel, is due to both overlapping oxygen evolution and the oxidation of Ni(OH) 2 to NiOOH. An optimum of 15% Fe in Ni/Fe films with respect to oxygen evolution activity was determined. At the same time, the potential-dependent formation of γ-NiOOH characterized by the Raman double band at 475 and 557 cm -1 allows for the conclusion that a certain amount of disorder introduced by Fe atoms is necessary to obtain high oxygen evolution reaction (OER) activity.

  19. Crystalline, Optical and Electrical Properties of NiZnO Thin Films Fabricated by MOCVD

    International Nuclear Information System (INIS)

    Wang Jin; Wang Hui; Zhao Wang; Ma Yan; Li Wan-Cheng; Shi Zhi-Feng; Zhao Long; Zhang Bao-Lin; Dong Xin; Du Guo-Tong; Xia Xiao-Chuan

    2011-01-01

    NiZnO thin films are grown on c-plane sapphire substrates by using a photo-assisted metal organic chemical vapor deposition (MOCVD) system. The effect of the Ni content on the crystalline, optical and electrical properties of the films are researched in detail. The NiZnO films could retain a basic wurtzite structure when the Ni content is less than 0.18. As Ni content increases, crystal quality degradation could be observed in the x-ray diffraction patterns and a clear red shift of the absorption edge can be observed in the transmittance spectrum. Furthermore, the donor defects in the NiZnO film can be compensated for effectively by increasing the Ni content. The change of Ni content has an important effect on the properties of NiZnO films. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  20. Electron microscopy study of Ni induced crystallization in amorphous Si thin films

    International Nuclear Information System (INIS)

    Radnóczi, G. Z.; Battistig, G.; Pécz, B.; Dodony, E.; Vouroutzis, N.; Stoemenos, J.; Frangis, N.; Kovács, A.

    2015-01-01

    The crystallization of amorphous silicon is studied by transmission electron microscopy. The effect of Ni on the crystallization is studied in a wide temperature range heating thinned samples in-situ inside the microscope. Two cases of limited Ni source and unlimited Ni source are studied and compared. NiSi 2 phase started to form at a temperature as low as 250°C in the limited Ni source case. In-situ observation gives a clear view on the crystallization of silicon through small NiSi 2 grain formation. The same phase is observed at the crystallization front in the unlimited Ni source case, where a second region is also observed with large grains of Ni 3 Si 2 . Low temperature experiments show, that long annealing of amorphous silicon at 410 °C already results in large crystallized Si regions due to the Ni induced crystallization

  1. Improved conductivity of infinite-layer LaNiO{sub 2} thin films by metal organic decomposition

    Energy Technology Data Exchange (ETDEWEB)

    Ikeda, Ai [Department of Applied Physics, Tokyo University of Agriculture and Technology, Naka-cho 2-24-16, Koganei, Tokyo 184-8588 (Japan); Research Fellow of the Japan Society for the Promotion of Science (Japan); Manabe, Takaaki [National Institute of Advanced Industrial Science and Technology (AIST), Higashi 1-1-1, Tsukuba, Ibaraki 305-8565 (Japan); Naito, Michio, E-mail: minaito@cc.tuat.ac.jp [Department of Applied Physics, Tokyo University of Agriculture and Technology, Naka-cho 2-24-16, Koganei, Tokyo 184-8588 (Japan)

    2013-12-15

    Highlights: •LaNiO{sub 2} films were synthesized by metal organic decomposition and topotactic reduction. •Room-temperature resistivity as low as 0.6 mΩ cm was achieved for infinite-layer LaNiO{sub 2}. •Lattice matched substrates are important in obtaining high conductivity. -- Abstract: Infinite-layer LaNiO{sub 2} thin films were synthesized by metal organic decomposition and subsequent topotactic reduction in hydrogen, and their transport properties were investigated. LaNiO{sub 2} is isostructural to SrCuO{sub 2}, the parent compound of high-T{sub c} Sr{sub 0.9}La{sub 0.1}CuO{sub 2} with T{sub c} = 44 K, and has 3d{sup 9} configuration, which is very rare in oxides but common to high-T{sub c} copper oxides. The bulk synthesis of LaNiO{sub 2} is not easy, but we demonstrate in this article that the thin-film synthesis of LaNiO{sub 2} is rather easy, thanks to a large-surface-to-volume ratio, which makes oxygen diffusion prompt. Our refined synthesis conditions produced highly conducting films of LaNiO{sub 2}. The resistivity of the best film is as low as 640 μΩ cm at 295 K and decreases with temperature down to 230 K but it shows a gradual upturn at lower temperatures.

  2. Pd-Ni-MWCNT nanocomposite thin films: preparation and structure

    Science.gov (United States)

    Kozłowski, Mirosław; Czerwosz, ElŻbieta; Sobczak, Kamil

    2017-08-01

    The properties of nanocomposite palladium-nickel-multi-walled (Pd-Ni-MWCNT) films deposited on aluminum oxide (Al2O3) substrate have been prepared and investigated. These films were obtained by 3 step process consisted of PVD/CVD/PVD methods. The morphology and structure of the obtained films were characterized by Scanning Electron Microscopy (SEM) and Transmission Electron Microscopy (TEM) techniques at various stages of the film formation. EDX spectrometer was used to measurements of elements segregation in the obtained film. TEM and STEM (Scanning Transmission Electron Microscopy) observations showed MWCNTs decorated with palladium nanoparticles in the film obtained in the last step of film formation (final PVD process). The average size of the palladium nanoparticles observed both on MWCNTs and carbonaceous matrix does not exceed 5 nm. The research was conducted on the use of the obtained films as potential sensors of gases (e.g. H2, NH3, CO2) and bio-sensors or optical sensors.

  3. Green synthesis of Ni-Nb oxide catalysts for low-temperature oxidative dehydrogenation of ethane

    KAUST Repository

    Zhu, Haibo; Rosenfeld, Devon C.; Anjum, Dalaver H.; Caps, Valerie; Basset, Jean-Marie

    2015-01-01

    The straightforward solid-state grinding of a mixture of Ni nitrate and Nb oxalate crystals led to, after mild calcination (T<400°C), nanostructured Ni-Nb oxide composites. These new materials efficiently catalyzed the oxidative dehydrogenation (ODH

  4. Surfactant-assisted ultrasonic spray pyrolysis of nickel oxide and lithium-doped nickel oxide thin films, toward electrochromic applications

    Energy Technology Data Exchange (ETDEWEB)

    Denayer, Jessica [Group of Research in Energy and Environment for MATerials (GREENMAT), University of Liège, allée de la chimie 3, 4000 Liège (Belgium); Bister, Geoffroy [Environmental and Material Research Association (CRIBC-INISMa), avenue gouverneur cornez 4, 7000 Mons (Belgium); Simonis, Priscilla [Laboratory LPS, University of Namur, rue de bruxelles 61, 5000 Namur (Belgium); Colson, Pierre; Maho, Anthony [Group of Research in Energy and Environment for MATerials (GREENMAT), University of Liège, allée de la chimie 3, 4000 Liège (Belgium); Aubry, Philippe [Environmental and Material Research Association (CRIBC-INISMa), avenue gouverneur cornez 4, 7000 Mons (Belgium); Vertruyen, Bénédicte [Group of Research in Energy and Environment for MATerials (GREENMAT), University of Liège, allée de la chimie 3, 4000 Liège (Belgium); Henrist, Catherine, E-mail: catherine.henrist@ulg.ac.be [Group of Research in Energy and Environment for MATerials (GREENMAT), University of Liège, allée de la chimie 3, 4000 Liège (Belgium); Lardot, Véronique; Cambier, Francis [Environmental and Material Research Association (CRIBC-INISMa), avenue gouverneur cornez 4, 7000 Mons (Belgium); Cloots, Rudi [Group of Research in Energy and Environment for MATerials (GREENMAT), University of Liège, allée de la chimie 3, 4000 Liège (Belgium)

    2014-12-01

    Highlights: • Surfactant-assisted USP: a novel and low cost process to obtain high quality nickel oxide films, with or without lithium dopant. • Increased uniformity and reduced light scattering thanks to the addition of a surfactant. • Improved electrochromic performance (coloration efficiency and contrast) for lithium-doped films by comparison with the undoped NiO film. - Abstract: Lithium-doped nickel oxide and undoped nickel oxide thin films have been deposited on FTO/glass substrates by a surfactant-assisted ultrasonic spray pyrolysis. The addition of polyethylene glycol in the sprayed solution has led to improved uniformity and reduced light scattering compared to films made without surfactant. Furthermore, the presence of lithium ions in NiO films has resulted in improved electrochromic performances (coloration contrast and efficiency), but with a slight decrease of the electrochromic switching kinetics.

  5. Investigation of ferromagnetism in oxygen deficient hafnium oxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Hildebrandt, Erwin; Kurian, Jose; Krockenberger, Yoshiharu; Alff, Lambert [Institut fuer Materialwissenschaft, TU Darmstadt (Germany); Suter, Andreas [PSI, Villingen (Switzerland); Wilhelm, Fabrice; Rogalev, Andrei [ESRF, Grenoble (France)

    2008-07-01

    Oxygen deficient thin films of hafnium oxide were grown on single crystal r-cut and c-cut sapphire by reactive molecular beam epitaxy. RF-activated oxygen was used for the in situ oxidation of hafnium oxide thin films. Oxidation conditions were varied substantially in order to create oxygen deficiency in hafnium oxide films intentionally. The films were characterized by X-ray and magnetic measurements. X-ray diffraction studies show an increase in lattice parameter with increasing oxygen deficiency. Oxygen deficient hafnium oxide thin films also showed a decreasing bandgap with increase in oxygen deficiency. The magnetisation studies carried out with SQUID did not show any sign of ferromagnetism in the whole oxygen deficiency range. X-ray magnetic circular dichroism measurements also confirmed the absence of ferromagnetism in oxygen deficient hafnium oxide thin films.

  6. Growth of ultra-thin Ag films on Ni(111)

    Energy Technology Data Exchange (ETDEWEB)

    Meyer, Axel; Flege, Jan Ingo; Falta, Jens [Institute of Solid State Physics, University of Bremen, 28359 Bremen (Germany); Senanayake, Sanjaya [Chemistry Department, Brookhaven National Laboratory, Upton, NY 11973-5000 (United States); Alamgir, Faisal [Georgia Institute of Technology, Atlanta, GA 30332-0245 (United States)

    2009-07-01

    The physical and chemical properties of ultra-thin metal films on metallic substrates strongly depend on their morphology and the structure of the buried interface. Hence, detailed knowledge of the growth mechanisms is essential for the creation of new functional materials with novel characteristics. In this contribution, we present a comprehensive structural study of the growth and properties of epitaxial Ag films on Ni(111) by in-situ low energy electron microscopy (LEEM). For lower temperatures, the growth of the Ag film proceeds in a Stranski-Krastanov mode after completion of the wetting layer, while for higher temperatures layer-by-layer growth is observed. Quantitative information about the film structure were obtained by analyzing the intensity-voltage (I-V) dependence of the local electron reflectivity (IV-LEEM). The corresponding I(V) spectra showed intensity oscillations depending on local thickness of the Ag film due to the quantum size effect (QSE). Modeling of the I(V) spectra was performed both within the framework of a one-dimensional Kronig-Penney model and multiple scattering IV-LEED calculations. The results of both approaches concerning the variation of the layer spacings and interface characteristics for different temperatures and film thicknesses will be discussed.

  7. Ni-YSZ cermet substrate supported thin SDC and YSZ+SDC bi-layer SOFCs

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, X.; Robertson, M.; Deces-Petit, C.; Xie, Y.; Hui, R.; Yick, S.; Styles, E.; Roller, J.; Kesler, O.; Qu, W.; Jankovic, J.; Tang, Z.; Perednis, D.; Maric, R.; Ghosh, D. [National Research Council of Canada, Vancouver, BC (Canada). Inst. for Fuel Cell Innovation

    2005-07-01

    One of the disadvantages of a ceria-based electrolyte is that it becomes a mixed conductor at anode conditions, which causes cell voltage loss and fuel efficiency loss due to internal shorting. Chemical and mechanical stability is another concern for long-term service. To lower manufacturing costs, efforts have been made to bring proven semiconductor manufacturing technology to Solid Oxide Fuel Cells (SOFCs). This study employed Tape casting of cermet substrates, Screen-printing of functional layers and Co-firing of cell components (TSC) to fabricate nickel (Ni)-cermet supported cells with mainly ceria-based thin electrolytes. Ni-Yttria-Stabilized Zirconia (YSZ) cermet supported cell with Samaria Doped Ceria (SDC) single layer electrolytes and YSZ+SDC bi-layer electrolytes were successfully developed for low-temperature performance characterization. The elemental distribution at the cell interface was mapped and the electrochemical performance of the cells was recorded. Many high-Zr-content micro-islands were found on the thin SDC surface. The influence of co-firing temperature and thin-film preparation methods on the Zr-islands' appearance was also investigated. Using in-situ sintered cathodes, high performance of the SDC cells was obtained. It was concluded that the bi-layer cells did show higher Open Circuit Voltage (OCV) values, with 1180 mW/cm{sup 2} at 650 degrees C, as well as good performance at 700-800 degrees C, with near OCV value. However, their performance was much lower than those of the SDC cells at low operating temperature. Zr-micro-islands formation on the SDC electrolyte was observed and investigated. 6 refs., 5 tabs., 7 figs.

  8. NiTiCu/AlN/NiTiCu shape memory thin film heterostructures for vibration damping in MEMS

    Energy Technology Data Exchange (ETDEWEB)

    Kaur, Navjot; Kaur, Davinder, E-mail: dkaurfph@iitr.ernet.in

    2014-03-25

    Highlights: • Fabrication of NiTiCu/AlN/NiTiCu heterostructure using dc/rf magnetron sputtering. • Exhibits highest hardness (38 GPa) and elastic modulus (187 GPa). • Enhanced dissipation of mechanical energy (E{sub d} = 5.7 N J). • High damping capacity (0.052) and figure of merit (∼0.62). • Can be applied for vibration damping in MEMS. -- Abstract: Shape memory alloy (NiTiCu) thin films coupled with piezoelectric AlN layer produce an intelligent material for vibration damping. In the present study pure NiTiCu, NiTiCu/AlN and NiTiCu/AlN/NiTiCu heterostructures have been deposited on Si substrate using magnetron sputtering technique. By the use of the interfaces and shape memory effect provided by NiTiCu layers, the damping capacity can be increased along with increase in stiffness and mechanical hardness. The heterostructures were characterized in terms of structural, electrical, morphological and mechanical properties by X-ray diffraction (XRD), four probe resistivity method, atomic force microscopy, field emission scanning electron microscopy, and nanoindentation. The NiTiCu/AlN/NiTiCu heterostructure exhibit enhanced mechanical and damping properties as compared to NiTiCu/AlN and pure NiTiCu. This enhancement in hardness and damping of the heterostructure could be attributed to the shape memory effect of NiTiCu, intrinsic piezoelectricity of AlN and increased number of interfaces in heterostructure that help in dissipation of mechanical vibrations. The findings of this work provide additional impetus for the application of these heterostructures in emerging fields of nanotechnology and microelectro mechanical (MEMS) devices.

  9. NiTiCu/AlN/NiTiCu shape memory thin film heterostructures for vibration damping in MEMS

    International Nuclear Information System (INIS)

    Kaur, Navjot; Kaur, Davinder

    2014-01-01

    Highlights: • Fabrication of NiTiCu/AlN/NiTiCu heterostructure using dc/rf magnetron sputtering. • Exhibits highest hardness (38 GPa) and elastic modulus (187 GPa). • Enhanced dissipation of mechanical energy (E d = 5.7 N J). • High damping capacity (0.052) and figure of merit (∼0.62). • Can be applied for vibration damping in MEMS. -- Abstract: Shape memory alloy (NiTiCu) thin films coupled with piezoelectric AlN layer produce an intelligent material for vibration damping. In the present study pure NiTiCu, NiTiCu/AlN and NiTiCu/AlN/NiTiCu heterostructures have been deposited on Si substrate using magnetron sputtering technique. By the use of the interfaces and shape memory effect provided by NiTiCu layers, the damping capacity can be increased along with increase in stiffness and mechanical hardness. The heterostructures were characterized in terms of structural, electrical, morphological and mechanical properties by X-ray diffraction (XRD), four probe resistivity method, atomic force microscopy, field emission scanning electron microscopy, and nanoindentation. The NiTiCu/AlN/NiTiCu heterostructure exhibit enhanced mechanical and damping properties as compared to NiTiCu/AlN and pure NiTiCu. This enhancement in hardness and damping of the heterostructure could be attributed to the shape memory effect of NiTiCu, intrinsic piezoelectricity of AlN and increased number of interfaces in heterostructure that help in dissipation of mechanical vibrations. The findings of this work provide additional impetus for the application of these heterostructures in emerging fields of nanotechnology and microelectro mechanical (MEMS) devices

  10. Properties of NiO thin films deposited by chemical spray pyrolysis using different precursor solutions

    Energy Technology Data Exchange (ETDEWEB)

    Cattin, L. [Universite de Nantes, Nantes Atlantique Universites, LAMP, EA 3825, Faculte des Sciences et des Techniques, 2 rue de la Houssiniere, BP 92208, Nantes F-44000 (France); Reguig, B.A.; Khelil, A. [Universite d' Oran Es-Senia, LPCM2E (Algeria); Morsli, M. [Universite de Nantes, Nantes Atlantique Universites, LAMP, EA 3825, Faculte des Sciences et des Techniques, 2 rue de la Houssiniere, BP 92208, Nantes F-44000 (France); Benchouk, K. [Universite d' Oran Es-Senia, LPCM2E (Algeria); Bernede, J.C. [Universite de Nantes, Nantes Atlantique Universites, LAMP, EA 3825, Faculte des Sciences et des Techniques, 2 rue de la Houssiniere, BP 92208, Nantes F-44000 (France)], E-mail: Jean-Christian.Bernede@univ-nantes.fr

    2008-07-15

    NiO thin films have been deposited by chemical spray pyrolysis using a perfume atomizer to grow the aerosol. The influence of the precursor, nickel chloride hexahydrate (NiCl{sub 2}.6H{sub 2}O), nickel nitrate hexahydrate (Ni(NO{sub 3}){sub 2}.6H{sub 2}O), nickel hydroxide hexahydrate (Ni(OH){sub 2}.6H{sub 2}O), nickel sulfate tetrahydrate (NiSO{sub 4}.4H{sub 2}O), on the thin films properties has been studied. In the experimental conditions used (substrate temperature 350 deg. C, precursor concentration 0.2-0.3 M, etc.), pure NiO thin films crystallized in the cubic phase can be achieved only with NiCl{sub 2} and Ni(NO{sub 3}){sub 2} precursors. These films have been post-annealed at 425 deg. C for 3 h either in room atmosphere or under vacuum. If all the films are p-type, it is shown that the NiO films conductivity and optical transmittance depend on annealing process. The properties of the NiO thin films annealed under room atmosphere are not significantly modified, which is attributed to the fact that the temperature and the environment of this annealing is not very different from the experimental conditions during spray deposition. The annealing under vacuum is more efficient. This annealing being proceeded in a vacuum no better than 10{sup -2} Pa, it is supposed that the modifications of the NiO thin film properties, mainly the conductivity and optical transmission, are related to some interaction between residual oxygen and the films.

  11. Fast electrochemical deposition of Ni(OH)2 precursor involving water electrolysis for fabrication of NiO thin films

    Science.gov (United States)

    Koyama, Miki; Ichimura, Masaya

    2018-05-01

    Ni(OH)2 precursor films were deposited by galvanostatic electrochemical deposition (ECD), and NiO thin films were fabricated by annealing in air. The effects of the deposition current densities were studied in a range that included current densities high enough to electrolyze water and generate hydrogen bubbles. The films fabricated by ECD involving water electrolysis had higher transparency and smoother surface morphology than those deposited with lower current densities. In addition, the annealed NiO films clearly had preferred (111) orientation when the deposition was accompanied by water electrolysis. p-type conduction was confirmed for the annealed films.

  12. Metal oxides modified NiO catalysts for oxidative dehydrogenation of ethane to ethylene

    KAUST Repository

    Zhu, Haibo

    2014-06-01

    The sol-gel method was applied to the synthesis of Zr, Ti, Mo, W, and V modified NiO based catalysts for the ethane oxidative dehydrogenation reaction. The synthesized catalysts were characterized by XRD, N2 adsorption, SEM and TPR techniques. The results showed that the doping metals could be highly dispersed into NiO domains without the formation of large amount of other bulk metal oxide. The modified NiO materials have small particle size, larger surface area, and higher reduction temperature in contrast to pure NiO. The introduction of group IV, V and VI transition metals into NiO decreases the catalytic activity in ethane ODH. However, the ethylene selectivity is enhanced with the highest level for the Ni-W-O and Ni-Ti-O catalysts. As a result, these two catalysts show improved efficiency of ethylene production in the ethane ODH reaction. © 2014 Elsevier B.V. All rights reserved.

  13. Reversible Changes in Resistance of Perovskite Nickelate NdNiO3 Thin Films Induced by Fluorine Substitution.

    Science.gov (United States)

    Onozuka, Tomoya; Chikamatsu, Akira; Katayama, Tsukasa; Hirose, Yasushi; Harayama, Isao; Sekiba, Daiichiro; Ikenaga, Eiji; Minohara, Makoto; Kumigashira, Hiroshi; Hasegawa, Tetsuya

    2017-03-29

    Perovskite nickel oxides are of fundamental as well as technological interest because they show large resistance modulation associated with phase transition as a function of the temperature and chemical composition. Here, the effects of fluorine doping in perovskite nickelate NdNiO 3 epitaxial thin films are investigated through a low-temperature reaction with polyvinylidene fluoride as the fluorine source. The fluorine content in the fluorinated NdNiO 3-x F x films is controlled with precision by varying the reaction time. The fully fluorinated film (x ≈ 1) is highly insulating and has a bandgap of 2.1 eV, in contrast to NdNiO 3 , which exhibits metallic transport properties. Hard X-ray photoelectron and soft X-ray absorption spectroscopies reveal the suppression of the density of states at the Fermi level as well as the reduction of nickel ions (valence state changes from +3 to +2) after fluorination, suggesting that the strong Coulombic repulsion in the Ni 3d orbitals associated with the fluorine substitution drives the metal-to-insulator transition. In addition, the resistivity of the fluorinated films recovers to the original value for NdNiO 3 after annealing in an oxygen atmosphere. By application of the reversible fluorination process to transition-metal oxides, the search for resistance-switching materials could be accelerated.

  14. Magnetic properties of electroplated nano/microgranular NiFe thin films for rf application

    NARCIS (Netherlands)

    Zhuang, Y.; Vroubel, M.; Rejaei, B.; Burghartz, J.N.; Attenborough, K.

    2005-01-01

    A granular NiFe thin film with large in-plane magnetic anisotropy and high ferromagnetic-resonance frequency developed for radio-frequency integrated circuit (IC) applications is presented. During the deposition, three-dimensional (3D) growth occurs, yielding NiFe grains (? ? 1.0??m). Nanonuclei (?

  15. Nanoparticle size and morphology control using ultrafast laser induced forward transfer of Ni thin films

    Energy Technology Data Exchange (ETDEWEB)

    Murphy, Ryan D. [Applied Physics Program, University of Michigan, Ann Arbor, Michigan 48109 (United States); Abere, Michael J.; Schrider, Keegan J.; Yalisove, Steven M. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109 (United States); Torralva, Ben [Department of Atmospheric, Oceanic and Space Sciences, University of Michigan, Ann Arbor, Michigan 48109 (United States)

    2013-08-26

    We have developed a nanoparticle (NP) printing technique using Ni thin film lift-off from glass substrates after ultrafast irradiation in air. Unique interactions of ultrafast laser pulses with thin films allow for control over NP faceting and size distributions. Control is achieved by changing the laser fluence, film thickness, and film-substrate distance. We demonstrate 20 nm Ni film removal from substrates and rapid NP printing, with size distributions centered at a 6 nm diameter. When the Ni film thickness is lowered to 10 nm, NPs are printed with distributions peaked at a 2 nm diameter.

  16. Fabrication, microstructure and stress effects in sputtered TiNi thin films

    International Nuclear Information System (INIS)

    Grummon, D.S.

    2000-01-01

    Sputtered thin films of equiatomic TiNi and TiNiX ternary alloys have excellent mechanical properties and exhibit robust shape-memory and transformational superelasticity. Furthermore, the energetic nature of the sputter deposition process allows the creation of highly refined microstructures that are difficult to achieve by melt-solidification. The present paper will present recent work on the relationship between processing, microstructure and properties of binary TiNi thin films, focusing primarily on residual stresses, kinetics of stress-relaxation and crystallization, and fine grain sizes achievable using hot-substrate direct crystallization. (orig.)

  17. Liquid flow deposited spinel (Ni,Mn){sub 3}O{sub 4} thin films for microbolometer applications

    Energy Technology Data Exchange (ETDEWEB)

    Le, Duc Thang, E-mail: ducthang36@skku.edu [Intelligent Electronic Component Team, Electronic Materials Convergence Division, Korea Institute of Ceramic Engineering and Technology, Seoul 153-801 (Korea, Republic of); School of Advanced Materials Science & Engineering, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Jeon, Chang Jun; Lee, Kui Woong; Jeong, Young Hun; Yun, Ji Sun [Intelligent Electronic Component Team, Electronic Materials Convergence Division, Korea Institute of Ceramic Engineering and Technology, Seoul 153-801 (Korea, Republic of); Yoon, Dae Ho, E-mail: dhyoon@skku.edu [School of Advanced Materials Science & Engineering, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Cho, Jeong Ho, E-mail: goedc@kicet.re.kr [Intelligent Electronic Component Team, Electronic Materials Convergence Division, Korea Institute of Ceramic Engineering and Technology, Seoul 153-801 (Korea, Republic of)

    2015-03-01

    Highlights: • Highly quality (Ni,Mn){sub 3}O{sub 4} thin films were grown using liquid flow deposited (LFD) technique. • It is possible to deposit multi–component manganite–oxide thin films by LFD at low temperatures. • Nickel–manganite films showed a good negative temperature coefficient (NTC) characteristic. • Liquid flow deposited (Ni,Mn){sub 3}O{sub 4} thin films are very potential for microbolometer applications. - Abstract: A liquid flow deposition (LFD) technique was initially used for the fabrication of single-component Mn{sub 3}O{sub 4} thin films onto Si wafer substrates at a range of substrate temperatures of 30–80 °C, with the introduction of an oxidizing reagent (H{sub 2}O{sub 2}). As a result, solid thin films were well formed from an aqueous solution. An X-ray diffraction (XRD) analysis showed typical characteristics of hausmannite Mn{sub 3}O{sub 4} with a spinel tetragonal phase. Field-emission scanning electron microscopy (FE-SEM) observations revealed nano-sized grains arranged uniformly on a dense and smooth surface for all of the as-deposited films. On the other hand, the LFD method was then extended to prepare two-component nickel–manganite films according to the binary chemical composition of Ni{sub x}Mn{sub 3−x}O{sub 4} with x = 0.02–0.2. The as-grown nickel–manganite films showed a surface with a good quality with a spherical bead-like architecture when x ≤ 0.10, while a conversion from spherical grains into highly porous nanowalls in the microstructure was noted in films when x ≥ 0.12. These results signify that it is possible to fabricate various multi-component manganite-oxide thin films at a low temperature. In addition, the dependences of the room-temperature electrical resistivity (ρ) and the temperature coefficient of resistance (TCR) on the Ni substitution level (x) were investigated on films annealed at 400 °C.

  18. Modulation of magnetic coercivity in Ni thin films by reversible control of strain

    Energy Technology Data Exchange (ETDEWEB)

    Lin, Wen-Chin, E-mail: wclin@ntnu.edu.tw [Department of Physics, National Taiwan Normal University, Taipei 116, Taiwan (China); Huang, Chia-Wei; Ting, Yi-Chieh; Lo, Fang-Yuh [Department of Physics, National Taiwan Normal University, Taipei 116, Taiwan (China); Chern, Ming-Yau [Department of Physics, National Taiwan University, Taipei 106, Taiwan (China)

    2015-05-01

    In this study, we demonstrated the magnetoelectric control of magnetic thin films. (111)-textured Pd/Ni/Pd thin films were prepared on mica/lead zirconium titanate (PZT) substrates for the investigation. The reversible modulation of magnetic coercivity in Ni films was observed through the electric-voltage-controlled strain variation from the PZT substrate. For 14 nm Ni film, the applied electric field of ±350 V/m led to ±0.5% strain variation of PZT, which was transferred to ±0.4% strain variation of Pd/Ni/Pd thin films on mica, and resulted in ∓17 Oe (∓5% of the preliminary magnetic coercivity). The reversible modulation of magnetic coercivity is supposed to be caused by the voltage-controlled strain through the magneto-elastic effect. - Highlights: • The magnetoelectric control of the magnetic coercivity of Pd/Ni/Pd thin films was demonstrated. • The ±0.4% strain variation of 14 nm Ni thin films resulted in ±17 Oe change of H{sub c}. • The reversible modulation of H{sub c} is supposed to be caused by the magneto-elastic effect.

  19. Structural, mechanical and magnetic study on galvanostatic electroplated nanocrystalline NiFeP thin films

    Science.gov (United States)

    Kalaivani, A.; Senguttuvan, G.; Kannan, R.

    2018-03-01

    Nickel based alloys has a huge applications in microelectronics and micro electromechanical systems owing to its superior soft magnetic properties. With the advantages of simplicity, cost-effectiveness and controllable patterning, electroplating processes has been chosen to fabricate thin films in our work. The soft magnetic NiFeP thin film was successfully deposited over the surface of copper plate through galvanostatic electroplating method by applying constant current density of 10 mA cm-2 for a deposition rate for half an hour. The properties of the deposited NiFeP thin films were analyzed by subjecting it into different physio-chemical characterization such as XRD, SEM, EDAX, AFM and VSM. XRD pattern confirms the formation of NiFeP particles and the structural analysis reveals that the NiFeP particles were uniformly deposited over the surface of copper substrate. The surface roughness analysis of the NiFeP films was done using AFM analysis. The magnetic studies and the hardness of the thin film were evaluated from the VSM and hardness test. The NiFeP thin films possess lower coercivity with higher magnetization value of 69. 36 × 10-3 and 431.92 Gauss.

  20. Optical and structural characterization of nickel oxide-based thin films obtained by chemical bath deposition

    International Nuclear Information System (INIS)

    Vidales-Hurtado, M.A.; Mendoza-Galvan, A.

    2008-01-01

    Nickel oxide-based thin films were obtained using the chemical bath deposition method on glass and silicon substrates. The precursor solution used was a mixture of nickel nitrate, urea, and deionized water. Molar concentration of nickel (0.3-1.0 M), deposition time, and immersing cycles were considered as deposition variables. Infrared spectroscopy and X-ray diffraction data reveal that all as-deposited films correspond to the transparent turbostratic phase α(II)-Ni(OH) 2 . However, the rate of deposition depends on nickel content in the solution. After annealing in air at temperatures above of 300 deg. C, the films are transformed to the NiO phase and show a grey/black color. In these films, scanning electron microscopy images show aggregates of thin stacked sheets on their surface, such aggregates can be easily removed leaving only a thin NiO layer of about 30 nm adhered firmly to the substrate, regardless of nickel concentration in the solution and deposition time. In order to obtain thicker NiO films with good optical properties a procedure is developed performing several immersing-annealing cycles

  1. Growth of single-crystal W whiskers during humid H2/N2 reduction of Ni, Fe-Ni, and Co-Ni doped tungsten oxide

    International Nuclear Information System (INIS)

    Wang Shiliang; He Yuehui; Zou Jou; Wang Yong; Huang Han

    2009-01-01

    Numbers of W whiskers were obtained by reducing Ni, Ni-Fe, and Ni-Co doped tungsten oxide in a mixed atmosphere of humid H 2 and N 2 . The phases and morphologies of the reduction products were characterized by XRD and SEM. Intensive TEM and EDS analyses showed that the obtained whiskers were W single crystals which typical have alloyed particles (Ni-W, Fe-Ni, or Co-Ni-W) at the growth tips. The formed W whiskers were presumed to be induced by the alloyed particles. Our experimental results revealed that, during the reduction process of tungsten oxide, the pre-reduced Ni, Fe-Ni, or Co-Ni particles not only served as nucleation aids for the initial growth of W phase from W oxide but also played the roles of catalysts during the reductive decomposition of gaseous WO 2 (OH) 2 .

  2. Highly c-axis oriented ZnO:Ni thin film nanostructure by RF magnetron sputtering: Structural, morphological and magnetic studies

    International Nuclear Information System (INIS)

    Siddheswaran, R.; Savková, Jarmila; Medlín, Rostislav; Očenášek, Jan; Životský, Ondřej; Novák, Petr; Šutta, Pavol

    2014-01-01

    Highlights: • Highly preferred oriented columnar ZnO:Ni thin films were prepared by magnetron sputtering. • XRD and azimuthal studies explain the characteristics of orientation in [0 0 1] direction. • Surface morphology and grains distribution were explained by FE-SEM. • XTEM specimen prepared by ion slicing used for TEM microstructure analyses. • Tendency of ferromagnetism by influence of Ni content was studied by VSM. - Abstract: Nickel doped zinc oxide (ZnO:Ni) thin films with different Ni concentrations were deposited on silicon substrates at 400 °C by reactive magnetron sputtering using a mixture of Ar and O 2 gases. The X-ray diffraction and azimuthal patterns of the ZnO:Ni were carried out, and the quality of the strong preferred orientation of crystalline columns in the direction [0 0 1] perpendicular to the substrate surface were analysed. The grain size, distribution, and homogeneity of the thin film surfaces were studied by FE-SEM. The EDX and mapping confirmed that the Ni is incorporated into ZnO uniformly. The microstructure of the textured columns was analysed by TEM and HRTEM analyses. The average thickness and length of the columns were found to be about 50 nm and 600 nm, respectively. The rise of ferromagnetism by the influence of Ni content was studied by VSM magnetic studies at room temperature

  3. Synthesis and characterization of Cu–Al–Ni shape memory alloy multilayer thin films

    International Nuclear Information System (INIS)

    Gómez-Cortés, J.F.; San Juan, J.; López, G.A.; Nó, M.L.

    2013-01-01

    Among active materials, shape memory alloys are well recognized for their work output density. Because of that, these alloys have attracted much attention to be used in micro/nano electromechanical systems. In the present work, the electron beam evaporation technique has been used to growth, by a multilayer method, two shape memory alloy thin films with different Cu–Al–Ni composition. Multilayers have been further thermally treated to produce the alloys by solid solution diffusion. The produced multilayers have been characterized and the presence of the martensite phase in the obtained thin films was studied. Furthermore, the influence of two different coatings onto the Si substrates, namely Si/SiO 2 and Si/Si 3 N 4 , was investigated. Mechanically stable, not detaching from the substrates, Cu–Al–Ni shape memory alloy thin films, about 1 micrometre thick, showing a martensitic transformation have been produced. - Highlights: ► Multilayer thin films of Cu–Al–Ni shape memory alloys produced by e-beam evaporation. ► SiN X 200 nm thick coating is good for high quality Cu–Al–Ni shape memory thin films. ► Thermal treatment renders Cu–Al–Ni multilayer in homogeneous martensite thin film

  4. Nanocrystalline Pd:NiFe2O4 thin films: A selective ethanol gas sensor

    International Nuclear Information System (INIS)

    Rao, Pratibha; Godbole, R.V.; Bhagwat, Sunita

    2016-01-01

    In this work, Pd:NiFe 2 O 4 thin films were investigated for the detection of reducing gases. These films were fabricated using spray pyrolysis technique and characterized using X-ray diffraction (XRD) to confirm the crystal structure. The surface morphology was studied using scanning electron microscopy (SEM). Magnetization measurements were carried out using SQUID VSM, which shows ferrimagnetic behavior of the samples. These thin film sensors were tested against methanol, ethanol, hydrogen sulfide and liquid petroleum gas, where they were found to be more selective to ethanol. The fabricated thin film sensors exhibited linear response signal for all the gases with concentrations up to 5 w/o Pd. Reduction in optimum operating temperature and enhancement in response was also observed. Pd:NiFe 2 O 4 thin films exhibited faster response and recovery characteristic. These sensors have potential for industrial applications because of their long-term stability, low power requirement and low production cost. - Highlights: • Ethanol gas sensors based on Pd:NiFe 2 O 4 nanoparticle thin film were fabricated. • Pd incorporation in NiFe 2 O 4 matrix inhibits grain growth. • The sensors were more selective to ethanol gas. • Sensors exhibited fast response and recovery when doped with palladium. • Pd:NiFe 2 O 4 thin film sensor displays excellent long–term stability.

  5. Synthesis and characterization of Cu–Al–Ni shape memory alloy multilayer thin films

    Energy Technology Data Exchange (ETDEWEB)

    Gómez-Cortés, J.F. [Dpt. Física Materia Condensada, Facultad de Ciencia y Tecnología, Universidad del País Vasco, Apdo. 644, 48080 Bilbao (Spain); San Juan, J., E-mail: jose.sanjuan@ehu.es [Dpt. Física Materia Condensada, Facultad de Ciencia y Tecnología, Universidad del País Vasco, Apdo. 644, 48080 Bilbao (Spain); López, G.A.; Nó, M.L. [Dpt. Física Aplicada II, Facultad de Ciencia y Tecnología, Universidad del País Vasco, Apdo. 644, 48080 Bilbao (Spain)

    2013-10-01

    Among active materials, shape memory alloys are well recognized for their work output density. Because of that, these alloys have attracted much attention to be used in micro/nano electromechanical systems. In the present work, the electron beam evaporation technique has been used to growth, by a multilayer method, two shape memory alloy thin films with different Cu–Al–Ni composition. Multilayers have been further thermally treated to produce the alloys by solid solution diffusion. The produced multilayers have been characterized and the presence of the martensite phase in the obtained thin films was studied. Furthermore, the influence of two different coatings onto the Si substrates, namely Si/SiO{sub 2} and Si/Si{sub 3}N{sub 4}, was investigated. Mechanically stable, not detaching from the substrates, Cu–Al–Ni shape memory alloy thin films, about 1 micrometre thick, showing a martensitic transformation have been produced. - Highlights: ► Multilayer thin films of Cu–Al–Ni shape memory alloys produced by e-beam evaporation. ► SiN{sub X} 200 nm thick coating is good for high quality Cu–Al–Ni shape memory thin films. ► Thermal treatment renders Cu–Al–Ni multilayer in homogeneous martensite thin film.

  6. Characterization of ultrasonic spray pyrolysed ruthenium oxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Patil, P.S.; Ennaoui, E.A.; Lokhande, C.D.; Mueller, M.; Giersig, M.; Diesner, K.; Tributsch, H. [Hahn-Meitner-Institut Berlin GmbH (Germany). Bereich Physikalische Chemie

    1997-11-21

    The ultrasonic spray pyrolysis (USP) technique was employed to deposit ruthenium oxide thin films. The films were prepared at 190 C substrate temperature and further annealed at 350 C for 30 min in air. The films were 0.22 {mu} thick and black grey in color. The structural, compositional and optical properties of ruthenium oxide thin films are reported. Contactless transient photoconductivity measurement was carried out to calculate the decay time of excess charge carriers in ruthenium oxide thin films. (orig.) 28 refs.

  7. Modification of magnetoresistance and magnetic properties of Ni thin films by adding Dy interlayer

    Science.gov (United States)

    Vorobiov, S. I.; Shabelnyk, T. M.; Shutylieva, O. V.; Pazukha, I. M.; Chornous, A. M.

    2018-03-01

    The paper reports the influence of dysprosium (Dy) interlayer addition on structure, magnetoresistance and magnetic properties of nickel (Ni) thin films. Trilayer film systems Ni/Dy/Ni have been prepared by alternate electron-beam evaporation. It is demonstrated that all as-prepared and annealed Ni thin films have face-centered cubic structure. The composition of the samples after addition of the Dy interlayer corresponds to the combination of face-centered cubic (Ni) and hexagonal close-packed (Dy) structures. The structure of Ni/Dy/Ni film systems changes from amorphous to polycrystalline when Dy interlayer thickness (t Dy) is more than 15 nm. The value of magnetoresistance increases with the adding the Dy interlayer in both longitudinal and transverse geometries, meanwhile the anisotropic character of magnetoresistance field dependences retained. The saturation and reversal magnetizations are reduced with the increasing of the Dy thickness interlayer, while the coercivity takes the minimum value at t Dy = 15 nm. The following increasing of t Dy leads to increasing of coercivity near to three times. This result indicates the influence of the crystal structure on the magnetic properties of Ni thin films at adding Dy interlayer.

  8. Soft Magnetic Properties of High-Entropy Fe-Co-Ni-Cr-Al-Si Thin Films

    Directory of Open Access Journals (Sweden)

    Pei-Chung Lin

    2016-08-01

    Full Text Available Soft magnetic properties of Fe-Co-Ni-Al-Cr-Si thin films were studied. As-deposited Fe-Co-Ni-Al-Cr-Si nano-grained thin films showing no magnetic anisotropy were subjected to field-annealing at different temperatures to induce magnetic anisotropy. Optimized magnetic and electrical properties of Fe-Co-Ni-Al-Cr-Si films annealed at 200 °C are saturation magnetization 9.13 × 105 A/m, coercivity 79.6 A/m, out-of-plane uniaxial anisotropy field 1.59 × 103 A/m, and electrical resistivity 3.75 μΩ·m. Based on these excellent properties, we employed such films to fabricate magnetic thin film inductor. The performance of the high entropy alloy thin film inductors is superior to that of air core inductor.

  9. Growth and Characteristic of Amorphous Nano-Granular TeO2-V2O5-NiO Thin Films

    Science.gov (United States)

    Hosseinzadeh, Sh.; Rahmati, A.; Bidadi, H.

    2016-12-01

    TeO2-V2O5-NiO thin films were deposited using thermal evaporation from 40TeO2-(60-y)V2O5-yNiO (y=0-30mol%) target. Structural analysis of the films was identified by X-ray diffractometry (XRD) and scanning electron microscopy (SEM). The amorphous TeO2-V2O5-NiO films have nanosized clear grain structure and sharp grain boundaries. DC conductivity and current-voltage (I-V) characteristic of TeO2-V2O5-NiO thin films were measured in the temperature range of 300-423K. As nickel oxide (NiO) content increases, the DC conductivity decreases up to two orders in value (10-9-10-11Sṡcm-1). Temperature dependence of conductivity is described using the small polaron hopping (SPH) model as well. Poole-Frenkel effect is observed at high external electric field. The optical absorption spectra of the TeO2-V2O5-NiO thin films were recorded in the wavelength range of 380-1100nm. The absorption coefficient revealed bandgap shrinkage (3.01-2.3eV) and band tail widening, due to an increase in NiO content. Energy dispersive X-ray spectroscopy (EDX) was used to determine elemental composition. In TeO2-V2O5-NiO thin films, the NiO content is around fifth of the initial target.

  10. Electrochemical Characterization of Nanoporous Nickel Oxide Thin Films Spray-Deposited onto Indium-Doped Tin Oxide for Solar Conversion Scopes

    Directory of Open Access Journals (Sweden)

    Muhammad Awais

    2015-01-01

    Full Text Available Nonstoichiometric nickel oxide (NiOx has been deposited as thin film utilizing indium-doped tin oxide as transparent and electrically conductive substrate. Spray deposition of a suspension of NiOx nanoparticles in alcoholic medium allowed the preparation of uniform NiOx coatings. Sintering of the coatings was conducted at temperatures below 500°C for few minutes. This scalable procedure allowed the attainment of NiOx films with mesoporous morphology and reticulated structure. The electrochemical characterization showed that NiOx electrodes possess large surface area (about 1000 times larger than their geometrical area. Due to the openness of the NiOx morphology, the underlying conductive substrate can be contacted by the electrolyte and undergo redox processes within the potential range in which NiOx is electroactive. This requires careful control of the conditions of polarization in order to prevent the simultaneous occurrence of reduction/oxidation processes in both components of the multilayered electrode. The combination of the open structure with optical transparency and elevated electroactivity in organic electrolytes motivated us to analyze the potential of the spray-deposited NiOx films as semiconducting cathodes of dye-sensitized solar cells of p-type when erythrosine B was the sensitizer.

  11. Influence of discharge voltage on the sensitivity of the resultant sputtered NiO thin films toward hydrogen gas

    Energy Technology Data Exchange (ETDEWEB)

    Khalaf, Mohammed K. [Center of Applied Physics, Directorate of Materials Research, Ministry of Science and Technology, Baghdad (Iraq); Mutlak, Rajaa H. [Dept. of Physics, College of Science, University of Baghdad, Ministry of Higher Education and Scientific Research, Baghdad (Iraq); Khudiar, Ausama I., E-mail: ausamaikhudiar@yahoo.com [Center of Applied Physics, Directorate of Materials Research, Ministry of Science and Technology, Baghdad (Iraq); Hial, Qahtan G. [Dept. of Physics, College of Science, University of Baghdad, Ministry of Higher Education and Scientific Research, Baghdad (Iraq)

    2017-06-01

    Nickel oxide thin films were deposited on glass substrates as the main gas sensor for H{sub 2} by the DC sputtering technique at various discharge voltages within the range of 1.8–2.5 kV. Their structural, optical and gas sensing properties were investigated by XRD, AFM, SEM, ultraviolet visible spectroscopy and home-made gas sensing measurement units. A diffraction peak in the direction of NiO (200) was observed for the sputtered films, thereby indicating that these films were polycrystalline in nature. The optical band gap of the films decreased from 3.8 to 3.5 eV when the thickness of the films was increased from 83.5 to 164.4 nm in relation to an increase in the sputtering discharge voltage from 1.8 to 2.5 kV, respectively. The gas sensitivity performance of the NiO films that were formed was studied and the electrical responses of the NiO-based sensors toward different H{sub 2} concentrations were also considered. The sensitivity of the gas sensor increased with the working temperature and H{sub 2} gas concentration. The thickness of the NiO thin films was also an important parameter in determining the properties of the NiO films as H{sub 2} sensors. It was shown in this study that NiO films have the capability to detect H{sub 2} concentrations below 3% in wet air, a feature that allows this material to be used directly for the monitoring of the environment.

  12. High temperature annealing effects on chromel (Ni90Cr10) thin films and interdiffusion study for sensing applications

    International Nuclear Information System (INIS)

    Datta, Arindom; Cheng Xudong; Miller, Michael A.; Li Xiaochun

    2008-01-01

    Metal embedded thin film thermocouples are very attractive for various applications in harsh environments. One promising technique to embed thin films micro sensors is diffusion bonding, which requires high temperatures and pressures typically in a vacuum. In this study, high temperature annealing effects on chromel (Ni90Cr10) thin film, an important sensor material as one of the components in type K thermocouple, were investigated in a diffusion bonding environment. Annealing was carried out at 800 deg. C for one hour in a diffusion bonder under vacuum without applying pressure. Under such conditions; surface, interface and interdiffusion phenomena were investigated using different characterization techniques including X-ray Diffraction, X-ray Photoelectron Spectroscopy, Scanning Electron Microscopy, and Energy Dispersive Spectroscopy. Results indicate that the present combination of dielectrics is quite reliable and Ni90Cr10 films of 500 nm thickness can be used for applications at least up to 800 deg. C due to a protective thin chromium oxide layer formation on top of the sensor film during annealing

  13. Deposition and characterisation of epitaxial oxide thin films for SOFCs

    KAUST Repository

    Santiso, José ; Burriel, Mó nica

    2010-01-01

    This paper reviews the recent advances in the use of thin films, mostly epitaxial, for fundamental studies of materials for solid oxide fuel cell (SOFC) applications. These studies include the influence of film microstructure, crystal orientation

  14. Chemical solution deposition of functional oxide thin films

    CERN Document Server

    Schneller, Theodor; Kosec, Marija

    2014-01-01

    Chemical Solution Deposition (CSD) is a highly-flexible and inexpensive technique for the fabrication of functional oxide thin films. Featuring nearly 400 illustrations, this text covers all aspects of the technique.

  15. Valence control of cobalt oxide thin films by annealing atmosphere

    International Nuclear Information System (INIS)

    Wang Shijing; Zhang Boping; Zhao Cuihua; Li Songjie; Zhang Meixia; Yan Liping

    2011-01-01

    The cobalt oxide (CoO and Co 3 O 4 ) thin films were successfully prepared using a spin-coating technique by a chemical solution method with CH 3 OCH 2 CH 2 OH and Co(NO 3 ) 2 .6H 2 O as starting materials. The grayish cobalt oxide films had uniform crystalline grains with less than 50 nm in diameter. The phase structure is able to tailor by controlling the annealing atmosphere and temperature, in which Co 3 O 4 thin film was obtained by annealing in air at 300-600, and N 2 at 300, and transferred to CoO thin film by raising annealing temperature in N 2 . The fitted X-ray photoelectron spectroscopy (XPS) spectra of the Co2p electrons are distinguishable from different valence states of cobalt oxide especially for their satellite structure. The valence control of cobalt oxide thin films by annealing atmosphere contributes to the tailored optical absorption property.

  16. Multiferroic iron oxide thin films at room temperature

    Czech Academy of Sciences Publication Activity Database

    Gich, M.; Fina, I.; Morelli, Alessio; Sánchez, F.; Alexe, M.; Gazquez, J.; Fontcuberta, J.; Roig, A.

    2014-01-01

    Roč. 26, č. 27 (2014), s. 4645-4652 ISSN 0935-9648 Institutional support: RVO:68378271 Keywords : multiferroic * iron oxide * thin film Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 17.493, year: 2014

  17. Determination of oxygen diffusion kinetics during thin film ruthenium oxidation

    NARCIS (Netherlands)

    Coloma Ribera, R.; van de Kruijs, Robbert Wilhelmus Elisabeth; Yakshin, Andrey; Bijkerk, Frederik

    2015-01-01

    In situ X-ray reflectivity was used to reveal oxygen diffusion kinetics for thermal oxidation of polycrystalline ruthenium thin films and accurate determination of activation energies for this process. Diffusion rates in nanometer thin RuO2 films were found to show Arrhenius behaviour. However, a

  18. Electrochemical synthesis, structure and phase composition of nano structured amorphous thin layers of NiW and Ni-Mo

    International Nuclear Information System (INIS)

    Vitina, I.; Lubane, M.; Belmane, V.; Rubene, V.; Krumina, A.

    2006-01-01

    Full text: Nano structured Ni-W thin layers containing W 6-37 wt.% were electrodeposited on a copper substratum. The W content in the layer changes, and it is determined by the electrolyte pH in the range 8.0-9.6 and the cathode current density in the range 1.0-10.0 A/dm 2 . The atomic composition and thermal stability of structure of the electrodeposited thin layers depend for the most part on the conditions of the electrodeposition and less on the W content in the layer. Cracking of the Ni-W layers electrodeposited at the electrolyte pH 8.5 and containing 34-37 wt.% W and 8.5 wt.% W was observed. The cracking increases at heating at 400 deg C for 50 h. On the contrary, no cracking of the Ni-W layer electrodeposited at the electrolyte pH 9.0 and containing 25 wt.% W was observed. The atomic composition of the layer remains practically unchanged at heating at 400 deg C for 50 h. The layer binds oxygen up to 7 wt.%. According to X-ray diffraction, in spite of the W content 35-37 wt.% in the layer, nano structured layers rather than amorphous layers were obtained which at heating at 400 deg C depending on the W content crystallises as Ni or intermetallic compounds Ni x W y if the W content is approx. 25 wt.%. Amorphous Ni-Mo alloys containing 35-52 wt.% Mo was electrodeposited on copper substratum at the cathode current densities of 0.5-1.5 A/dm2 and the electrolyte pH 6.8-8.6. Formation of thin layer (∼1-2μm) of X-ray amorphous Ni-Mo alloy, the Mo content, the characteristics of structure depend on the electrodeposition process, the electrolyte pH, and the cathode current density. The Ni-Mo layer deposited at the electrolyte pH above 8.6 and below average 6.8 had a nanocrystalline structure rather than characteristics of amorphous structure. Ni- W and Ni-Mo alloys were electrodeposited from citrate electrolyte not containing ammonium ions

  19. Electromagnetic wave absorption properties of NiCoP alloy nanoparticles decorated on reduced graphene oxide nanosheets

    International Nuclear Information System (INIS)

    Ye, Weichun; Fu, Jiajia; Wang, Qin; Wang, Chunming; Xue, Desheng

    2015-01-01

    NiCoP alloy nanoparticles supported on reduced graphene oxide (NiCoP/RGO) are synthesized by in situ co-reduction of Ni 2+ , Co 2+ and graphene oxide (GO) with sodium hypophosphite in a one-pot reaction. This synthesis route is simple and can be used for industrial preparation. The different molar ratios of Ni/Co can be obtained by changing the molar ratio of their salts in the reaction bath. The effect of annealing temperature on the crystal structure of NiCoP alloys has been further investigated. After 500 °C annealing, NiCoP alloys exhibit good crystallinity. The as-prepared NiCoP/RGO composites demonstrate high dielectric constant and magnetic loss in the frequency range of 2–18 GHz due to the conductive and ferromagnetic behavior. Also, their coercivity and magnetization strength are decreased from magnetic measurement with the increase of Ni content. As the molar ratio of Ni/Co is 3:1, the maximum value of the reflection loss reaches to −17.84 dB. Furthermore, the NiCoP/RGO composites have better corrosion resistance than traditional iron series magnetic nanoparticles. It is expected that the composites with the thin, light-weighted and broadband absorbing and good anti-corrosion properties will have a great potential for electromagnetic wave absorption applications. - Highlights: • NiCoP alloys supported on graphene were prepared via a co-reduction method. • The nanocomposites exhibited strong microwave wave absorption properties. • The microwave absorption properties enhanced with the increase of Ni content. • The nanocomposites showed good anti-corrosion property

  20. Electromagnetic wave absorption properties of NiCoP alloy nanoparticles decorated on reduced graphene oxide nanosheets

    Energy Technology Data Exchange (ETDEWEB)

    Ye, Weichun, E-mail: yewch@lzu.edu.cn [Key Laboratory of Nonferrous Metal Chemistry and Resources Utilization of Gansu Province and Department of Chemistry, Lanzhou University, Lanzhou 730000 (China); Key Laboratory for Magnetism and Magnetic Materials of MOE, Lanzhou University, Lanzhou 730000 (China); Fu, Jiajia; Wang, Qin; Wang, Chunming [Key Laboratory of Nonferrous Metal Chemistry and Resources Utilization of Gansu Province and Department of Chemistry, Lanzhou University, Lanzhou 730000 (China); Xue, Desheng, E-mail: xueds@lzu.edu.cn [Key Laboratory for Magnetism and Magnetic Materials of MOE, Lanzhou University, Lanzhou 730000 (China)

    2015-12-01

    NiCoP alloy nanoparticles supported on reduced graphene oxide (NiCoP/RGO) are synthesized by in situ co-reduction of Ni{sup 2+}, Co{sup 2+} and graphene oxide (GO) with sodium hypophosphite in a one-pot reaction. This synthesis route is simple and can be used for industrial preparation. The different molar ratios of Ni/Co can be obtained by changing the molar ratio of their salts in the reaction bath. The effect of annealing temperature on the crystal structure of NiCoP alloys has been further investigated. After 500 °C annealing, NiCoP alloys exhibit good crystallinity. The as-prepared NiCoP/RGO composites demonstrate high dielectric constant and magnetic loss in the frequency range of 2–18 GHz due to the conductive and ferromagnetic behavior. Also, their coercivity and magnetization strength are decreased from magnetic measurement with the increase of Ni content. As the molar ratio of Ni/Co is 3:1, the maximum value of the reflection loss reaches to −17.84 dB. Furthermore, the NiCoP/RGO composites have better corrosion resistance than traditional iron series magnetic nanoparticles. It is expected that the composites with the thin, light-weighted and broadband absorbing and good anti-corrosion properties will have a great potential for electromagnetic wave absorption applications. - Highlights: • NiCoP alloys supported on graphene were prepared via a co-reduction method. • The nanocomposites exhibited strong microwave wave absorption properties. • The microwave absorption properties enhanced with the increase of Ni content. • The nanocomposites showed good anti-corrosion property.

  1. Multiferroicity in oxide thin films and heterostructures

    International Nuclear Information System (INIS)

    Glavic, Artur

    2012-01-01

    In this work a variety of different systems of transition metal oxides ABO 3 (perovskite materials, where B stands for a transition metal and A for a rare earth element) were produced as thin films and heterostructures and analyzed for the structural, magnetic and ferroelectric properties. For the epitaxial film preparation mostly pulse laser deposition (PLD) was applied. For one series high pressure oxide sputter deposition was used as well. The bulk multiferroics TbMnO 3 and DyMnO 3 , which develop their electric polarization due to a cycloidal magnetic order, have been prepared as single layers with thicknesses between 2 and 200 nm on YAlO 3 substrates using PLD and sputter deposition. The structural characterization of the surfaces and crystal structure where performed using X-ray reflectometry and diffraction, respectively. These yielded low surface roughness and good epitaxial growth. The magnetic behavior was macroscopically measured with SQUID magnetometry and microscopically with polarized neutron diffraction and resonant magnetic X-ray scattering. While all investigated samples showed antiferromagnetic order, comparable with the collinear magnetic phase of their bulk materials, only the sputter deposited samples exhibited the multiferroic low temperature cycloidal order. The investigation of the optical second harmonic generation in a TbMnO 3 sample could proof the presence of a ferroelectric order in the low temperature phase. The respective transition temperatures of the thin films have been very similar to those of the bulk materials. In contrast an increase in the rare earth ordering temperature has been observed, which reduces the Mn order slightly, an effect not known from bulk TbMnO 3 crystals. The coupling of the antiferromagnetic order in TbMnO 3 to ferromagnetic layers of LaCoO 3 was investigated in super-lattices containing 20 bilayers produced with PLD on the same substrates. The SQUID magnetometry yielded a strong influence of the

  2. Unidirectional oxide hetero-interface thin-film diode

    International Nuclear Information System (INIS)

    Park, Youngmin; Lee, Eungkyu; Lee, Jinwon; Lim, Keon-Hee; Kim, Youn Sang

    2015-01-01

    The unidirectional thin-film diode based on oxide hetero-interface, which is well compatible with conventional thin-film fabrication process, is presented. With the metal anode/electron-transporting oxide (ETO)/electron-injecting oxide (EIO)/metal cathode structure, it exhibits that electrical currents ohmically flow at the ETO/EIO hetero-interfaces for only positive voltages showing current density (J)-rectifying ratio of ∼10 5 at 5 V. The electrical properties (ex, current levels, and working device yields) of the thin-film diode (TFD) are systematically controlled by changing oxide layer thickness. Moreover, we show that the oxide hetero-interface TFD clearly rectifies an AC input within frequency (f) range of 10 2  Hz < f < 10 6  Hz, providing a high feasibility for practical applications

  3. Unidirectional oxide hetero-interface thin-film diode

    Energy Technology Data Exchange (ETDEWEB)

    Park, Youngmin; Lee, Eungkyu; Lee, Jinwon; Lim, Keon-Hee [Program in Nano Science and Technology, Graduate School of Convergence Science and Technology, Seoul National University, Seoul 151-742 (Korea, Republic of); Kim, Youn Sang, E-mail: younskim@snu.ac.kr [Program in Nano Science and Technology, Graduate School of Convergence Science and Technology, Seoul National University, Seoul 151-742 (Korea, Republic of); Advanced Institute of Convergence Technology, Gyeonggi-do 443-270 (Korea, Republic of)

    2015-10-05

    The unidirectional thin-film diode based on oxide hetero-interface, which is well compatible with conventional thin-film fabrication process, is presented. With the metal anode/electron-transporting oxide (ETO)/electron-injecting oxide (EIO)/metal cathode structure, it exhibits that electrical currents ohmically flow at the ETO/EIO hetero-interfaces for only positive voltages showing current density (J)-rectifying ratio of ∼10{sup 5} at 5 V. The electrical properties (ex, current levels, and working device yields) of the thin-film diode (TFD) are systematically controlled by changing oxide layer thickness. Moreover, we show that the oxide hetero-interface TFD clearly rectifies an AC input within frequency (f) range of 10{sup 2} Hz < f < 10{sup 6} Hz, providing a high feasibility for practical applications.

  4. Electrical transport and optical band gap of NiFe2Ox thin films

    Science.gov (United States)

    Bougiatioti, Panagiota; Manos, Orestis; Klewe, Christoph; Meier, Daniel; Teichert, Niclas; Schmalhorst, Jan-Michael; Kuschel, Timo; Reiss, Günter

    2017-12-01

    We fabricated NiFe2Ox thin films on MgAl2O4(001) by reactive dc magnetron co-sputtering varying the oxygen partial pressure. The fabrication of a material with a variable oxygen deficiency leads to controllable electrical and optical properties which are beneficial for the investigations of the transport phenomena and could, therefore, promote the use of such materials in spintronic and spin caloritronic applications. We used several characterization techniques to investigate the film properties, focusing on their structural, magnetic, electrical, and optical properties. From the electrical resistivity, we obtained the conduction mechanisms that govern the systems in the high and low temperature regimes. We further extracted low thermal activation energies which unveil extrinsic transport mechanisms. The thermal activation energy decreases in the less oxidized samples revealing the pronounced contribution of a large amount of electronic states localized in the band gap to the electrical conductivity. The Hall coefficient is negative and decreases with increasing conductivity as expected for n-type conduction, while the Hall- and the drift mobilities show a large difference. The optical band gaps were determined via ultraviolet-visible spectroscopy. They follow a similar trend as the thermal activation energies, with lower band gap values in the less oxidized samples.

  5. Aluminum doped nickel oxide thin film with improved electrochromic performance from layered double hydroxides precursor in situ pyrolytic route

    International Nuclear Information System (INIS)

    Shi, Jingjing; Lai, Lincong; Zhang, Ping; Li, Hailong; Qin, Yumei; Gao, Yuanchunxue; Luo, Lei; Lu, Jun

    2016-01-01

    Electrochromic materials with unique performance arouse great interest on account of potential application values in smart window, low-power display, automobile anti-glare rearview mirror, and e-papers. In this paper, high-performing Al-doped NiO porous electrochromic film grown on ITO substrate has been prepared via a layered double hydroxides(LDHs) precursor in situ pyrolytic route. The Al 3+ ions distributed homogenously within the NiO matrix can significantly influence the crystallinity of Ni-Al LDH and NiO:Al 3+ films. The electrochromic performance of the films were evaluated by means of UV–vis absorption spectroscopy, cyclic voltammetry (CV), electrochemical impedance spectroscopy (EIS), and chronoamperometry(CA) measurements. In addition, the ratio of Ni 3+ /Ni 2+ also varies with Al content which can lead to different electrochemical performances. Among the as-prepared films, NiO film prepared from Ni-Al (19:1) LDH show the best electrochromic performance with a high transparency of 96%, large optical modulation range (58.4%), fast switching speed (bleaching/coloration times are 1.8/4.2 s, respectively) and excellent durability (30% decrease after 2000 cycles). The improved performance was owed to the synergy of large NiO film specific surface area and porous morphology, as well as Al doping stifled the formation of Ni 3+ making bleached state more pure. This LDHs precursor pyrolytic method is simple, low-cost and environmental benign and is feasible for the preparation of NiO:Al and other Al-doped oxide thin film. - Graphical abstract: The ratio of Ni 3+ /Ni 2+ varies with Al content which can lead to different electrochemical performances. Among the as-prepared films, NiO film prepared from Ni-Al (19:1) LDH show the best electrochromic performance with a high transparency of 96%, large optical modulation range, fast switching speed and excellent durability. Display Omitted

  6. Ultra smooth NiO thin films on flexible plastic (PET) substrate at room temperature by RF magnetron sputtering and effect of oxygen partial pressure on their properties

    International Nuclear Information System (INIS)

    Nandy, S.; Goswami, S.; Chattopadhyay, K.K.

    2010-01-01

    Transparent p-type nickel oxide thin films were grown on polyethylene terephthalate (PET) and glass substrates by RF magnetron sputtering technique in argon + oxygen atmosphere with different oxygen partial pressures at room temperature. The morphology of the NiO thin films grown on PET and glass substrates was studied by atomic force microscope. The rms surface roughnesses of the films were in the range 0.63-0.65 nm. These ultra smooth nanocrystalline NiO thin films are useful for many applications. High resolution transmission electron microscopic studies revealed that the grains of NiO films on the highly flexible PET substrate were purely crystalline and spherical in shape with diameters 8-10 nm. XRD analysis also supported these results. NiO films grown on the PET substrates were found to have better crystalline quality with fewer defects than those on the glass substrates. The sheet resistances of the NiO films deposited on PET and glass substrates were not much different; having values 5.1 and 5.3 kΩ/□ and decreased to 3.05, 3.1 kΩ/□ respectively with increasing oxygen partial pressure. The thicknesses of the films on both substrates were ∼700 nm. It was also noted that further increase in oxygen partial pressure caused increase in resistivity due to formation of defects in NiO.

  7. Effect of Ni Core Structure on the Electrocatalytic Activity of Pt-Ni/C in Methanol Oxidation

    Directory of Open Access Journals (Sweden)

    Vladimir Linkov

    2013-07-01

    Full Text Available Methanol oxidation catalysts comprising an outer Pt-shell with an inner Ni-core supported on carbon, (Pt-Ni/C, were prepared with either crystalline or amorphous Ni core structures. Structural comparisons of the two forms of catalyst were made using transmission electron microscopy (TEM, X-ray diffraction (XRD and X-ray photoelectron spectroscopy (XPS, and methanol oxidation activity compared using CV and chronoamperometry (CA. While both the amorphous Ni core and crystalline Ni core structures were covered by similar Pt shell thickness and structure, the Pt-Ni(amorphous/C catalyst had higher methanol oxidation activity. The amorphous Ni core thus offers improved Pt usage efficiency in direct methanol fuel cells.

  8. In situ Oxidation of Ultrathin Silver Films on Ni(111)

    International Nuclear Information System (INIS)

    Meyer, A.; Flege, I.; Senanayake, S.; Kaemena, B.; Rettew, R.; Alamgir, F.; Falta, J.

    2011-01-01

    Oxidation of silver films of one- and two-monolayer thicknesses on the Ni(111) surface was investigated by low-energy electron microscopy at temperatures of 500 and 600 K. Additionally, intensity-voltage curves were measured in situ during oxidation to reveal the local film structure on a nanometer scale. At both temperatures, we find that exposure to molecular oxygen leads to the destabilization of the Ag film with subsequent relocation of the silver atoms to small few-layer-thick silver patches and concurrent evolution of NiO(111) regions. Subsequent exposure of the oxidized surface to ethylene initiates the transformation of bilayer islands back into monolayer islands, demonstrating at least partial reversibility of the silver relocation process at 600 K.

  9. FY 1997 report on the study on lamination control technology for functional multi-element oxide thin films by complex beam epitaxy (CxBE) process; 1997 nendo chosa hokokusho (sakutaisen epitaxy (CxBE) ho ni yoru kinosei tagenso sankabutsu usumaku no sekiso seigyo gijutsu ni kansuru kenkyu)

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1998-03-01

    Complex beam epitaxy (CxBE) process was proposed and demonstrated as new deposition process of multi-element oxide thin films. This process radiates excimer laser onto a metal complex target of ethylenediamine-tetraacetate complex under reduced pressure oxygen atmosphere condition in a reaction vessel to supply raw material onto a heated substrate. This process allowed deposition of YBCO123 phase hetero-epitaxial film onto a single-crystalline SrTiO3 substrate. This process was proved to be promising through study on crystal orientation, composition transcription and surface smoothness of the obtained oxide thin films. In addition, epitaxial ZnO film was also deposited onto a single crystalline Al2O3 substrate by this process. The relation between the obtained film and substrate epitaxy was examined, and photoluminescence of specimens was measured by triple wave of Nd:YAG laser. As a result, it was clarified that the epitaxial ZnO film prepared by this process is useful as laser material. 60 refs., 48 figs., 5 tabs.

  10. Oxidation of ruthenium thin films using atomic oxygen

    Energy Technology Data Exchange (ETDEWEB)

    McCoy, A.P.; Bogan, J.; Brady, A.; Hughes, G.

    2015-12-31

    In this study, the use of atomic oxygen to oxidise ruthenium thin films is assessed. Atomic layer deposited (ALD) ruthenium thin films (~ 3 nm) were exposed to varying amounts of atomic oxygen and the results were compared to the impact of exposures to molecular oxygen. X-ray photoelectron spectroscopy studies reveal substantial oxidation of metallic ruthenium films to RuO{sub 2} at exposures as low as ~ 10{sup 2} L at 575 K when atomic oxygen was used. Higher exposures of molecular oxygen resulted in no metal oxidation highlighting the benefits of using atomic oxygen to form RuO{sub 2}. Additionally, the partial oxidation of these ruthenium films occurred at temperatures as low as 293 K (room temperature) in an atomic oxygen environment. - Highlights: • X-ray photoelectron spectroscopy study of the oxidation of Ru thin films • Oxidation of Ru thin films using atomic oxygen • Comparison between atomic oxygen and molecular oxygen treatments on Ru thin films • Fully oxidised RuO{sub 2} thin films formed with low exposures to atomic oxygen.

  11. Synthesis and characterization of zinc oxide thin films prepared by ...

    African Journals Online (AJOL)

    Zinc oxide thin films were prepared with ammonia/ammonium chloride buffer as the reaction moderating agent in the chemical bath deposition technique. An observable color change during the reaction due to variations in the reactants concentration indicated the existence of the cupric (CuO) and cuprous (Cu2O) oxides ...

  12. Characterizations of photoconductivity of graphene oxide thin films

    Directory of Open Access Journals (Sweden)

    Shiang-Kuo Chang-Jian

    2012-06-01

    Full Text Available Characterizations of photoresponse of a graphene oxide (GO thin film to a near infrared laser light were studied. Results showed the photocurrent in the GO thin film was cathodic, always flowing in an opposite direction to the initial current generated by the preset bias voltage that shows a fundamental discrepancy from the photocurrent in the reduced graphene oxide thin film. Light illumination on the GO thin film thus results in more free electrons that offset the initial current. By examining GO thin films reduced at different temperatures, the critical temperature for reversing the photocurrent from cathodic to anodic was found around 187°C. The dynamic photoresponse for the GO thin film was further characterized through the response time constants within the laser on and off durations, denoted as τon and τoff, respectively. τon for the GO thin film was comparable to the other carbon-based thin films such as carbon nanotubes and graphenes. τoff was, however, much larger than that of the other's. This discrepancy was attributable to the retardation of exciton recombination rate thanks to the existing oxygen functional groups and defects in the GO thin films.

  13. Novel micro-patterning processes for thin film NiTi vascular devices

    International Nuclear Information System (INIS)

    Chun, Y J; Mohanchandra, K P; Carman, G P; Levi, D S; Fishbein, M C

    2010-01-01

    In order to create microscale features in thin film NiTi for use in vascular endografts, a novel 'lift-off process' was developed for use with deep reactive ion etching. A wet etching approach is compared to two variations of this new 'lift-off' process. The first lift-off process (lift-off I) used Si posts to define the features of NiTi film deposited on the Si substrate. This method produced fractures in the NiTi when the film was released. The lift-off II process used Si islands as substrate for the film while the Si wafer defined the specific geometric features. Lift-off II process allowed for the creation of various shape patterns (i.e., ellipse, diamond, circle, square, etc) in the range of 5–180 µm. The lift-off II process produced smooth and well aligned micro-patterns in thin film NiTi without the undercutting found in wet etching techniques. The micro-patterned thin film NiTi formed from the lift-off II process was used to cover a stent. In vivo tests were performed to evaluate the endothelialization though patterned thin films. Angiography, histopathology and SEM showed patency of the artery and uniformly promoted endothelial layer covering without thrombosis in both a medium and small artery

  14. Determination of oxygen diffusion kinetics during thin film ruthenium oxidation

    Energy Technology Data Exchange (ETDEWEB)

    Coloma Ribera, R., E-mail: r.colomaribera@utwente.nl; Kruijs, R. W. E. van de; Yakshin, A. E.; Bijkerk, F. [MESA+ Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500 AE Enschede (Netherlands)

    2015-08-07

    In situ X-ray reflectivity was used to reveal oxygen diffusion kinetics for thermal oxidation of polycrystalline ruthenium thin films and accurate determination of activation energies for this process. Diffusion rates in nanometer thin RuO{sub 2} films were found to show Arrhenius behaviour. However, a gradual decrease in diffusion rates was observed with oxide growth, with the activation energy increasing from about 2.1 to 2.4 eV. Further exploration of the Arrhenius pre-exponential factor for diffusion process revealed that oxidation of polycrystalline ruthenium joins the class of materials that obey the Meyer-Neldel rule.

  15. Alloying process of sputter-deposited Ti/Ni multilayer thin films

    International Nuclear Information System (INIS)

    Cho, H.; Kim, H.Y.; Miyazaki, S.

    2006-01-01

    Alloying process of a Ti/Ni multilayer thin film was investigated in detail by differential scanning calorimetry (DSC), X-ray diffractometry (XRD) and transmission electron microscopy (TEM). The Ti/Ni multilayer thin film was prepared by depositing Ti and Ni layers alternately on a SiO 2 /Si substrate. The number of each metal layer was 100, and the total thickness was 3 μm. The alloy composition was determined as Ti-51 at.%Ni by electron probe micro analysis (EPMA). The DSC curve exhibited three exothermic peaks at 621, 680 and 701 K during heating the as-sputtered multilayer thin film. In order to investigate the alloying process, XRD and TEM observation was carried out for the specimens heated up to various temperatures with the heating rate same as the DSC measurement. The XRD profile of the as-sputtered film revealed only diffraction peaks of Ti and Ni. But reaction layers of 3 nm in thickness were observed at the interfaces of Ti and Ni layers in cross-sectional TEM images. The reaction layer was confirmed as an amorphous phase by the nano beam diffraction analysis. The XRD profiles exhibited that the intensity of Ti diffraction peak decreased in the specimen heat-treated above 600 K. The peak from Ni became broad and shifted to lower diffraction angle. The amorphous layer thickened up to 6 nm in the specimen heated up to 640 K. The diffraction peak corresponding to Ti-Ni B2 phase appeared and the peak from Ni disappeared for the specimen heated up to 675 K. The Ti-Ni B2 crystallized from the amorphous reaction layer. After further heating above the third exothermic peak, the intensity of the peak from the Ti-Ni B2 phase increased, the peak from Ti disappeared and the peaks corresponding to Ti 2 Ni appeared. The Ti 2 Ni phase was formed by the reaction of the Ti-Ni B2 and Ti

  16. Nanocrystalline Pd:NiFe2O4 thin films: A selective ethanol gas sensor

    Science.gov (United States)

    Rao, Pratibha; Godbole, R. V.; Bhagwat, Sunita

    2016-10-01

    In this work, Pd:NiFe2O4 thin films were investigated for the detection of reducing gases. These films were fabricated using spray pyrolysis technique and characterized using X-ray diffraction (XRD) to confirm the crystal structure. The surface morphology was studied using scanning electron microscopy (SEM). Magnetization measurements were carried out using SQUID VSM, which shows ferrimagnetic behavior of the samples. These thin film sensors were tested against methanol, ethanol, hydrogen sulfide and liquid petroleum gas, where they were found to be more selective to ethanol. The fabricated thin film sensors exhibited linear response signal for all the gases with concentrations up to 5 w/o Pd. Reduction in optimum operating temperature and enhancement in response was also observed. Pd:NiFe2O4 thin films exhibited faster response and recovery characteristic. These sensors have potential for industrial applications because of their long-term stability, low power requirement and low production cost.

  17. Ni-doped zinc oxide nanocombs and phonon spectra properties

    International Nuclear Information System (INIS)

    Zhang Bin; Zhang Xingtang; Gong Hechun; Wu Zhishen; Zhou Shaomin; Du Zuliang

    2008-01-01

    Ni-doped comb-like zinc oxide (ZnO) semiconductor nanostructures have been synthesized by a simple chemical vapor-deposition method (CVD) at relatively low temperature. The as-synthesized ZnO nanocombs consist of an array of very uniform, perfectly aligned, evenly spaced and long single-crystalline nanobelts (nanowires) with periods of about several tens of nanometers. X-ray diffraction and Raman spectra results provide the evidence that Ni is incorporated into the ZnO lattice at Zn site. Photoluminescence spectra of the as-obtained samples have been detected, in which the incorporation of donor Ni leads to the increases of the ultraviolet emission intensity and a blueshift of emission peak. This technique can be used to prepare other semiconductors and morphology-controlled doping nanocombs

  18. Oxidation of scandium thin films on tungsten surface

    International Nuclear Information System (INIS)

    Gorodetskij, D.A.; Martynyuk, A.V.

    1988-01-01

    Presence of Sc on the surface of W in amounts larger than a monolayer coverage leads to a decrease of the work function at the initial oxidation stage, which is attributed to oxygen implantation into the surface layer of the metal. A subsequent oxidation is followed by the formation on the surface of a thin oxide layer and an increase of the work function. An increase of the amount of Sc deposited on the surface before the oxidation decreases the work function of the obtained oxide from 5.8 (clean W surface) down to 3.3 eV (thick Sc layer on W)

  19. Effect of chemical treatment on surface characteristics of sputter deposited Ti-rich NiTi shape memory alloy thin-films

    International Nuclear Information System (INIS)

    Sharma, S.K.; Mohan, S.

    2014-01-01

    Graphical abstract: FTIR spectra recorded for sputter deposited (a) untreated and (b) chemically treated NiTi SMA thin-films. - Highlights: • The effect of chemical treatment on surface properties of NiTi films demonstrated. • Chemically treated films offer strong ability to form protective TiO 2 layer. • TiO 2 layer formation offer great application prospects in biomedical fields. - Abstract: NiTi thin-films were deposited by DC magnetron sputtering from single alloy target (Ni/Ti:45/55 at.%). The rate of deposition and thickness of sputter deposited films were maintained to ∼35 nm min −1 and 4 μm respectively. A set of sputter deposited NiTi films were selected for specific chemical treatment with the solution comprising of de-ionized water, HF and HNO 3 respectively. The influence of chemical treatment on surface characteristics of NiTi films before and after chemical treatment was investigated for their structure, micro-structure and composition using different analytical techniques. Prior to chemical treatment, the composition of NiTi films using energy dispersive X-ray dispersive spectroscopy (EDS), were found to be 51.8 atomic percent of Ti and 48.2 atomic percent of Ni. The structure and morphology of these films were investigated by X-ray diffraction (XRD) and scanning electron microscopy (SEM). XRD investigations, demonstrated the presence of dominant Austenite (1 1 0) phase along with Martensite phase, for untreated NiTi films whereas some additional diffraction peaks viz. (1 0 0), (1 0 1), and (2 0 0) corresponding to Rutile and Anatase phase of Titanium dioxide (TiO 2 ) along with parent Austenite (1 1 0) phase were observed for chemically treated NiTi films. FTIR studies, it can be concluded that chemically treated films have higher tendency to form metal oxide/hydroxide than the untreated NiTi films. XPS investigations, demonstrated the presence of Ni-free surface and formation of a protective metal oxide (TiO 2 ) layer on the surface of

  20. Photoinduced hydrophobic surface of graphene oxide thin films

    International Nuclear Information System (INIS)

    Zhang Xiaoyan; Song Peng; Cui Xiaoli

    2012-01-01

    Graphene oxide (GO) thin films were deposited on transparent conducting oxide substrates and glass slides by spin coating method at room temperature. The wettability of GO thin films before and after ultraviolet (UV) irradiation was characterized with water contact angles, which increased from 27.3° to 57.6° after 3 h of irradiation, indicating a photo-induced hydrophobic surface. The UV–vis absorption spectra, Raman spectroscopy, X-ray photoelectron spectroscopy, and conductivity measurements of GO films before and after UV irradiation were taken to study the mechanism of photoinduced hydrophobic surface of GO thin films. It is demonstrated that the photoinduced hydrophobic surface is ascribed to the elimination of oxygen-containing functional groups on GO molecules. This work provides a simple strategy to control the wettability properties of GO thin films by UV irradiation. - Highlights: ► Photoinduced hydrophobic surface of graphene oxide thin films has been demonstrated. ► Elimination of oxygen-containing functional groups in graphene oxide achieved by UV irradiation. ► We provide novel strategy to control surface wettability of GO thin films by UV irradiation.

  1. Formation of defect-fluorite structured NdNiOxHy epitaxial thin films via a soft chemical route from NdNiO3 precursors.

    Science.gov (United States)

    Onozuka, T; Chikamatsu, A; Katayama, T; Fukumura, T; Hasegawa, T

    2016-07-26

    A new phase of oxyhydride NdNiOxHy with a defect-fluorite structure was obtained by a soft chemical reaction of NdNiO3 epitaxial thin films on a substrate of SrTiO3 (100) with CaH2. The epitaxial relationship of this phase relative to SrTiO3 could be controlled by changing the reaction temperature. At 240 °C, NdNiOxHy grew with a [001] orientation, forming a thin layer of infinite-layer NdNiO2 at the interface between the NdNiOxHy and the substrate. Meanwhile, a high-temperature reaction at 400 °C formed [110]-oriented NdNiOxHy without NdNiO2.

  2. Development of FeNiMoB thin film materials for microfabricated magnetoelastic sensors

    KAUST Repository

    Liang, Cai; Gooneratne, Chinthaka; Cha, Dong Kyu; Chen, Long; Gianchandani, Yogesh; Kosel, Jü rgen

    2012-01-01

    MetglasTM 2826MB foils of 25–30 μm thickness with the composition of Fe40Ni38Mo4B18 have been used for magnetoelastic sensors in various applications over many years. This work is directed at the investigation of ∼3 μm thick iron-nickel-molybdenum-boron (FeNiMoB) thin films that are intended for integrated microsystems. The films are deposited on Si substrate by co-sputtering of iron-nickel (FeNi), molybdenum(Mo), and boron (B) targets. The results show that dopants of Mo and B can significantly change the microstructure and magnetic properties of FeNi materials. When FeNi is doped with only Mo its crystal structure changes from polycrystalline to amorphous with the increase of dopant concentration; the transition point is found at about 10 at. % of Mo content. A significant change in anisotropic magneticproperties of FeNi is also observed as the Modopant level increases. The coercivity of FeNi filmsdoped with Mo decreases to a value less than one third of the value without dopant.Doping the FeNi with B together with Mo considerably decreases the value of coercivity and the out-of-plane magnetic anisotropyproperties, and it also greatly changes the microstructure of the material. In addition, doping B to FeNiMo remarkably reduces the remanence of the material. The filmmaterial that is fabricated using an optimized process is magnetically as soft as amorphous MetglasTM 2826MB with a coercivity of less than 40 Am−1. The findings of this study provide us a better understanding of the effects of the compositions and microstructure of FeNiMoB thin filmmaterials on their magnetic properties.

  3. Development of FeNiMoB thin film materials for microfabricated magnetoelastic sensors

    KAUST Repository

    Liang, Cai

    2012-12-07

    MetglasTM 2826MB foils of 25–30 μm thickness with the composition of Fe40Ni38Mo4B18 have been used for magnetoelastic sensors in various applications over many years. This work is directed at the investigation of ∼3 μm thick iron-nickel-molybdenum-boron (FeNiMoB) thin films that are intended for integrated microsystems. The films are deposited on Si substrate by co-sputtering of iron-nickel (FeNi), molybdenum(Mo), and boron (B) targets. The results show that dopants of Mo and B can significantly change the microstructure and magnetic properties of FeNi materials. When FeNi is doped with only Mo its crystal structure changes from polycrystalline to amorphous with the increase of dopant concentration; the transition point is found at about 10 at. % of Mo content. A significant change in anisotropic magneticproperties of FeNi is also observed as the Modopant level increases. The coercivity of FeNi filmsdoped with Mo decreases to a value less than one third of the value without dopant.Doping the FeNi with B together with Mo considerably decreases the value of coercivity and the out-of-plane magnetic anisotropyproperties, and it also greatly changes the microstructure of the material. In addition, doping B to FeNiMo remarkably reduces the remanence of the material. The filmmaterial that is fabricated using an optimized process is magnetically as soft as amorphous MetglasTM 2826MB with a coercivity of less than 40 Am−1. The findings of this study provide us a better understanding of the effects of the compositions and microstructure of FeNiMoB thin filmmaterials on their magnetic properties.

  4. Effect of Ti seed and spacer layers on structure and magnetic properties of FeNi thin films and FeNi-based multilayers

    Energy Technology Data Exchange (ETDEWEB)

    Svalov, A.V., E-mail: andrey.svalov@ehu.es [Departamento de Electricidad y Electrónica, Universidad del País Vasco (UPV/EHU), 48080 Bilbao (Spain); Department of Magnetism and Magnetic Nanomaterials, Ural Federal University, 620002 Ekaterinburg (Russian Federation); Larrañaga, A. [SGIker, Servicios Generales de Investigación, Universidad del País Vasco (UPV/EHU), 48080 Bilbao (Spain); Kurlyandskaya, G.V. [Departamento de Electricidad y Electrónica, Universidad del País Vasco (UPV/EHU), 48080 Bilbao (Spain); Department of Magnetism and Magnetic Nanomaterials, Ural Federal University, 620002 Ekaterinburg (Russian Federation)

    2014-10-15

    Highlights: • Fe{sub 19}Ni{sub 81} films and FeNi-based multilayers were prepared by magnetron sputtering. • The samples were deposited onto glass substrates at room temperature. • Ti/FeNi films exhibit good (1 1 1) texture and crystallinity. • The thick Cu seed increases the coercive force of the magnetic layer. • The thin Ti spacer restores the magnetic softness of the Cu/Ti/FeNi multilayers. - Abstract: The microstructure and magnetic properties of sputtered permalloy films and FeNi-based multilayers prepared by magnetron sputtering have been studied. X-ray diffraction measurements indicate that Ti/FeNi films exhibit good (1 1 1) texture and crystallinity. Ti/FeNi bilayers with high crystallographic quality have relatively low resistivity. The Ti seed layer does not influence the magnetic properties of FeNi film in Ti/FeNi bilayers, but the thick Cu seed layer leads to an increase of the coercive force of the magnetic layer. For the FeNi films deposited on thick Cu seed layer, the (0 1 0) and (0 0 2) diffraction peaks of hcp nickel were clearly observed. The thin Ti spacer between Cu and FeNi layers prevents the formation of the nickel phase and restores the magnetic softness of the FeNi layer in the Cu/Ti/FeNi sample. Obtained results can be important for the development of multilayer sensitive elements for giant magnetoimpedance or magnetoresistance detectors.

  5. Cell adhesion on NiTi thin film sputter-deposited meshes

    International Nuclear Information System (INIS)

    Loger, K.; Engel, A.; Haupt, J.; Li, Q.; Lima de Miranda, R.; Quandt, E.; Lutter, G.; Selhuber-Unkel, C.

    2016-01-01

    Scaffolds for tissue engineering enable the possibility to fabricate and form biomedical implants in vitro, which fulfill special functionality in vivo. In this study, free-standing Nickel–Titanium (NiTi) thin film meshes were produced by means of magnetron sputter deposition. Meshes contained precisely defined rhombic holes in the size of 440 to 1309 μm 2 and a strut width ranging from 5.3 to 9.2 μm. The effective mechanical properties of the microstructured superelastic NiTi thin film were examined by tensile testing. These results will be adapted for the design of the holes in the film. The influence of hole and strut dimensions on the adhesion of sheep autologous cells (CD133 +) was studied after 24 h and after seven days of incubation. Optical analysis using fluorescence microscopy and scanning electron microscopy showed that cell adhesion depends on the structural parameters of the mesh. After 7 days in cell culture a large part of the mesh was covered with aligned fibrous material. Cell adhesion is particularly facilitated on meshes with small rhombic holes of 440 μm 2 and a strut width of 5.3 μm. Our results demonstrate that free-standing NiTi thin film meshes have a promising potential for applications in cardiovascular tissue engineering, particularly for the fabrication of heart valves. - Highlights: • Freestanding NiTi thin film scaffolds were fabricated with magnetron sputtering process. • Effective mechanical properties of NiTi scaffolds can be adapted by the mesh structure parameters. • Cell adhesion on the NiTi thin film scaffold is controlled by the structure parameters of the mesh. • Cells strongly adhere after seven days and form a confluent layer on the mesh.

  6. Cell adhesion on NiTi thin film sputter-deposited meshes

    Energy Technology Data Exchange (ETDEWEB)

    Loger, K. [Inorganic Functional Materials, Institute for Materials Science, Faculty of Engineering, University of Kiel (Germany); Engel, A.; Haupt, J. [Department of Cardiovascular Surgery, University Hospital of Schleswig-Holstein, Kiel (Germany); Li, Q. [Biocompatible Nanomaterials, Institute for Materials Science, Faculty of Engineering, University of Kiel (Germany); Lima de Miranda, R. [Inorganic Functional Materials, Institute for Materials Science, Faculty of Engineering, University of Kiel (Germany); ACQUANDAS GmbH, Kiel (Germany); Quandt, E. [Inorganic Functional Materials, Institute for Materials Science, Faculty of Engineering, University of Kiel (Germany); Lutter, G. [Department of Cardiovascular Surgery, University Hospital of Schleswig-Holstein, Kiel (Germany); Selhuber-Unkel, C. [Biocompatible Nanomaterials, Institute for Materials Science, Faculty of Engineering, University of Kiel (Germany)

    2016-02-01

    Scaffolds for tissue engineering enable the possibility to fabricate and form biomedical implants in vitro, which fulfill special functionality in vivo. In this study, free-standing Nickel–Titanium (NiTi) thin film meshes were produced by means of magnetron sputter deposition. Meshes contained precisely defined rhombic holes in the size of 440 to 1309 μm{sup 2} and a strut width ranging from 5.3 to 9.2 μm. The effective mechanical properties of the microstructured superelastic NiTi thin film were examined by tensile testing. These results will be adapted for the design of the holes in the film. The influence of hole and strut dimensions on the adhesion of sheep autologous cells (CD133 +) was studied after 24 h and after seven days of incubation. Optical analysis using fluorescence microscopy and scanning electron microscopy showed that cell adhesion depends on the structural parameters of the mesh. After 7 days in cell culture a large part of the mesh was covered with aligned fibrous material. Cell adhesion is particularly facilitated on meshes with small rhombic holes of 440 μm{sup 2} and a strut width of 5.3 μm. Our results demonstrate that free-standing NiTi thin film meshes have a promising potential for applications in cardiovascular tissue engineering, particularly for the fabrication of heart valves. - Highlights: • Freestanding NiTi thin film scaffolds were fabricated with magnetron sputtering process. • Effective mechanical properties of NiTi scaffolds can be adapted by the mesh structure parameters. • Cell adhesion on the NiTi thin film scaffold is controlled by the structure parameters of the mesh. • Cells strongly adhere after seven days and form a confluent layer on the mesh.

  7. Ni-Based Solid Oxide Cell Electrodes

    DEFF Research Database (Denmark)

    Mogensen, Mogens Bjerg; Holtappels, Peter

    2013-01-01

    This paper is a critical review of the literature on nickel-based electrodes for application in solid oxide cells at temperature from 500 to 1000 _C. The applications may be fuel cells or electrolyser cells. The reviewed literature is that of experimental results on both model electrodes...... and practical composite cermet electrodes. A substantially longer three-phase boundary (TPB) can be obtained per unit area of cell in such a composite of nickel and electrolyte material, provided that two interwoven solid networks of the two solid and one gaseous phases are obtained to provide a three...

  8. Microstructure and mechanical behavior of a shape memory Ni-Ti bi-layer thin film

    Energy Technology Data Exchange (ETDEWEB)

    Mohri, Maryam [School of Metallurgy and Materials Engineering, College of Engineering, University of Tehran, Tehran (Iran, Islamic Republic of); Karlsruhe Institute of Technology, Institute of Nanotechnology, 76021 Karlsruhe (Germany); Nili-Ahmadabadi, Mahmoud, E-mail: nili@ut.ac.ir [School of Metallurgy and Materials Engineering, College of Engineering, University of Tehran, Tehran (Iran, Islamic Republic of); Center of Excellence for High Performance Materials, University of Tehran, Tehran (Iran, Islamic Republic of); Ivanisenko, Julia [Karlsruhe Institute of Technology, Institute of Nanotechnology, 76021 Karlsruhe (Germany); Schwaiger, Ruth [Karlsruhe Institute of Technology, Institute for Applied Materials, 76021 Karlsruhe (Germany); Hahn, Horst; Chakravadhanula, Venkata Sai Kiran [Karlsruhe Institute of Technology, Institute of Nanotechnology, 76021 Karlsruhe (Germany)

    2015-05-29

    Two different single-layers and a bi-layer Ni-Ti thin films with chemical compositions of Ni{sub 45}Ti{sub 50}Cu{sub 5}, Ni{sub 50.8}Ti{sub 49.2} and Ni{sub 50.8}Ti{sub 49.2}/Ni{sub 45}Ti{sub 50}Cu{sub 5} (numbers indicate at.%) determined by energy dispersive X-ray spectroscopy were deposited on Si (111) substrates using DC magnetron sputtering. The structures, surface morphology and transformation temperatures of annealed thin films at 500 °C for 15 min and 1 h were studied using grazing incidence X-ray diffraction, transmission electron microscopy (TEM), atomic force microscopy and differential scanning calorimetry (DSC), respectively. Nanoindentation was used to characterize the mechanical properties. The DSC and X-ray diffraction results indicated the austenitic structure of the Ni{sub 50.8}Ti{sub 49.2} and martensitic structure of the Ni{sub 45}Ti{sub 50}Cu{sub 5} thin films while the bi-layer was composed of austenitic and martensitic thin films. TEM study revealed that copper encourages crystallization in the bi-layer such that crystal structure containing nano-precipitates in the Ni{sub 45}Ti{sub 50}Cu{sub 5} layer was detected after 15 min annealing while the Ni{sub 50.8}Ti{sub 49.2} layer crystallized after 60 min at 500 °C. Furthermore, after annealing at 500 °C for 15 min, a precipitate free zone and thin layer amorphous were observed closely to the interface in the top layer. The bi-layer was completely crystallized at 500 °C for 1 h and the orientation of the Ni-rich precipitates indicated a stress gradient in the bi-layer. The bi-layer thin film showed different transformation temperatures and mechanical behavior from the single-layers. The developed bi-layer has different phase transformation temperatures, the higher temperatures of shape memory effect and lower temperature of pseudo-elastic behavior compared to the single-layers. Also, the bi-layer thin film exhibited a combined pseudo-elastic behavior and shape memory effect with a reduced

  9. Orientation control of chemical solution deposited LaNiO3 thin films

    International Nuclear Information System (INIS)

    Ueno, Kengo; Yamaguchi, Toshiaki; Sakamoto, Wataru; Yogo, Toshinobu; Kikuta, Koichi; Hirano, Shin-ichi

    2005-01-01

    High quality LaNiO 3 (LNO) thin films with preferred orientation could be synthesized on Pt/Ti/SiO 2 /Si substrates at 700 deg. C using the chemical solution deposition method. The homogeneous and stable LNO precursor solutions were prepared using lanthanum isopropoxide and nickel (II) acetylacetonate in a mixed solvent of absolute ethanol and 2-methoxyethanol. The oriented LNO thin films exhibit metallic electro-conduction, and their resistivity at room temperature is sufficiently low for making them an alternative electrode material for functional ceramic thin films

  10. SIMS studies of oxide growth on beta-NiAl

    Science.gov (United States)

    Mitchell, D. F.; Prescott, R.; Graham, M. J.; Doychak, J.

    1992-01-01

    This paper reports on a study of the growth of aluminum oxide on beta-NiAl at temperatures up to 1200 C. The scales have been formed in two-stage experiments using O2-16 and O2-18 gases, and the various isotopic species have been located by direct imaging using SIMS. Supplementary information on oxide morphologies and structures has been obtained by SEM. SIMS images and depth profiles indicate where oxidation has taken place predominantly by cation or anion diffusion at different stages of the growth process. The way in which the presence of small amounts of reactive elements can affect scale growth is also considered. These results help to provide an improved understanding of the mechanism of alumina scale formation, which is of benefit in the development of oxidation-resistant alloys and intermetallics for service at high temperatures.

  11. Characterization of thin Zn-Ni alloy coatings electrodeposited on low carbon steel

    International Nuclear Information System (INIS)

    El Hajjami, A.; Gigandet, M.P.; De Petris-Wery, M.; Catonne, J.C.; Duprat, J.J.; Thiery, L.; Raulin, F.; Pommier, N.; Starck, B.; Remy, P.

    2007-01-01

    The characteristics of initial layer formation in alkaline bath for Zn-Ni (12-15%) alloy electrodeposition on low carbon steel plates are detected in a nanometric thickness range by electron probe microanalysis (EPMA), with both bulk sample and thin film on substrate correction procedure, glow discharge optical emission spectroscopy (GDOES) and gracing incidence X-ray diffraction (GIXRD). The Zn-Ni coatings were elaborated using either intensiostatic or potentiostatic mode. A preferential deposition of Ni, in the initial thin layer, is detected by these analyses; according to EPMA and GDOES measurements, a layer rich in nickel at the interface substrate/deposit is observed (90 wt.% Ni) and approved by GIXRD; the thin layer of Ni formed in the first moments of electrolysis greatly inhibits the Zn deposition. The initial layer depends upon the relative ease of hydrogen and metal discharge and on the different substrate surfaces involved. The electrodeposition of zinc-nickel alloys in the first stage is a normal phenomenon of codeposition, whereby nickel - the more noble metal - is deposited preferentially

  12. Magnetic properties of FeNi-based thin film materials with different additives

    KAUST Repository

    Liang, C.; Gooneratne, C.P.; Wang, Q.X.; Liu, Y.; Gianchandani, Y.; Kosel, Jü rgen

    2014-01-01

    This paper presents a study of FeNi-based thin film materials deposited with Mo, Al and B using a co-sputtering process. The existence of soft magnetic properties in combination with strong magneto-mechanical coupling makes these materials

  13. Deposition and characterisation of epitaxial oxide thin films for SOFCs

    KAUST Repository

    Santiso, José

    2010-10-24

    This paper reviews the recent advances in the use of thin films, mostly epitaxial, for fundamental studies of materials for solid oxide fuel cell (SOFC) applications. These studies include the influence of film microstructure, crystal orientation and strain in oxide ionic conducting materials used as electrolytes, such as fluorites, and in mixed ionic and electronic conducting materials used as electrodes, typically oxides with perovskite or perovskite-related layered structures. The recent effort towards the enhancement of the electrochemical performance of SOFC materials through the deposition of artificial film heterostructures is also presented. These thin films have been engineered at a nanoscale level, such as the case of epitaxial multilayers or nanocomposite cermet materials. The recent progress in the implementation of thin films in SOFC devices is also reported. © 2010 Springer-Verlag.

  14. Preparation and characterization of vanadium oxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Monfort, O.; Plesch, G. [Comenius University of Bratislava, Faculty of Natural Sciences, Department of Inorganic Chemistry, 84215 Bratislava (Slovakia); Roch, T. [Comenius University of Bratislava, Faculty of Mathematics Physics and Informatics, Department of Experimental Physics, 84248 Bratislava (Slovakia)

    2013-04-16

    The thermotropic VO{sub 2} films have many applications, since they exhibit semiconductor-conductor switching properties at temperature around 70 grad C. Vanadium oxide thin films were prepared via sol-gel method. Spin coater was used to depose these films on Si/SiO{sub 2} and lime glass substrates. Thin films of V{sub 2}O{sub 5} can be reduced to metastable VO{sub 2} thin films at the temperature of 450 grad C under the pressure of 10{sup -2} Pa. These films are then converted to thermotropic VO{sub 2} at 700 grad C in argon under normal pressure. (authors)

  15. Ni-Cr thin film resistor fabrication for GaAs monolithic microwave integrated circuits

    International Nuclear Information System (INIS)

    Vinayak, Seema; Vyas, H.P.; Muraleedharan, K.; Vankar, V.D.

    2006-01-01

    Different Ni-Cr alloys were sputter-deposited on silicon nitride-coated GaAs substrates and covered with a spin-coated polyimide layer to develop thin film metal resistors for GaAs monolithic microwave integrated circuits (MMICs). The contact to the resistors was made through vias in the polyimide layer by sputter-deposited Ti/Au interconnect metal. The variation of contact resistance, sheet resistance (R S ) and temperature coefficient of resistance (TCR) of the Ni-Cr resistors with fabrication process parameters such as polyimide curing thermal cycles and surface treatment given to the wafer prior to interconnect metal deposition has been studied. The Ni-Cr thin film resistors exhibited lower R S and higher TCR compared to the as-deposited Ni-Cr film that was not subjected to thermal cycles involved in the MMIC fabrication process. The change in resistivity and TCR values of Ni-Cr films during the MMIC fabrication process was found to be dependent on the Ni-Cr alloy composition

  16. Nanostructured manganese oxide thin films as electrode material for supercapacitors

    Science.gov (United States)

    Xia, Hui; Lai, Man On; Lu, Li

    2011-01-01

    Electrochemical capacitors, also called supercapacitors, are alternative energy storage devices, particularly for applications requiring high power densities. Recently, manganese oxides have been extensively evaluated as electrode materials for supercapacitors due to their low cost, environmental benignity, and promising supercapacitive performance. In order to maximize the utilization of manganese oxides as the electrode material for the supercapacitors and improve their supercapacitive performance, the nanostructured manganese oxides have therefore been developed. This paper reviews the synthesis of the nanostructured manganese oxide thin films by different methods and the supercapacitive performance of different nanostructures.

  17. Multiferroic oxide thin films and heterostructures

    KAUST Repository

    Lu, Chengliang

    2015-05-26

    Multiferroic materials promise a tantalizing perspective of novel applications in next-generation electronic, memory, and energy harvesting technologies, and at the same time they also represent a grand scientific challenge on understanding complex solid state systems with strong correlations between multiple degrees of freedom. In this review, we highlight the opportunities and obstacles in growing multiferroic thin films with chemical and structural integrity and integrating them in functional devices. Besides the magnetoelectric effect, multiferroics exhibit excellent resistant switching and photovoltaic properties, and there are plenty opportunities for them to integrate with other ferromagnetic and superconducting materials. The challenges include, but not limited, defect-related leakage in thin films, weak magnetism, and poor control on interface coupling. Although our focuses are Bi-based perovskites and rare earth manganites, the insights are also applicable to other multiferroic materials. We will also review some examples of multiferroic applications in spintronics, memory, and photovoltaic devices.

  18. Tin oxide transparent thin-film transistors

    International Nuclear Information System (INIS)

    Presley, R E; Munsee, C L; Park, C-H; Hong, D; Wager, J F; Keszler, D A

    2004-01-01

    A SnO 2 transparent thin-film transistor (TTFT) is demonstrated. The SnO 2 channel layer is deposited by RF magnetron sputtering and then rapid thermal annealed in O 2 at 600 deg. C. The TTFT is highly transparent, and enhancement-mode behaviour is achieved by employing a very thin channel layer (10-20 nm). Maximum field-effect mobilities of 0.8 cm 2 V -1 s -1 and 2.0 cm 2 V -1 s -1 are obtained for enhancement- and depletion-mode devices, respectively. The transparent nature and the large drain current on-to-off ratio of 10 5 associated with the enhancement-mode behaviour of these devices may prove useful for novel gas-sensor applications

  19. Polycrystalline oxides formation during transient oxidation of (001) Cu-Ni binary alloys studied by in situ TEM and XRD

    International Nuclear Information System (INIS)

    Yang, J.C.; Li, Z.Q.; Sun, L.; Zhou, G.W.; Eastman, J.A.; Fong, D.D.; Fuoss, P.H.; Baldo, P.M.; Rehn, L.E.; Thompson, L.J.

    2009-01-01

    The nucleation and growth of Cu 2 O and NiO islands due to oxidation of Cu x Ni 1-x (001) films were monitored, at various temperatures, by in situ ultra-high vacuum (UHV) transmission electron microscopy (TEM) and in situ synchrotron X-ray diffraction (XRD). In remarkable contrast to our previous observations of Cu and Cu-Au oxidation, irregular-shaped polycrystalline oxide islands formed with respect to the Cu-Ni alloy film, and an unusual second oxide nucleation stage was noted. In situ XRD experiments revealed that NiO formed first epitaxially, then other orientations appeared, and finally polycrystalline Cu 2 O developed as the oxidation pressure was increased. The segregation of Ni and Cu towards or away, respectively, from the alloy surface during oxidation could disrupt the surface and cause polycrystalline oxide formation.

  20. Deposition and characterization of ZnO/NiO thin films

    Energy Technology Data Exchange (ETDEWEB)

    Vijayaprasath, G.; Sakthivel, P.; Murugan, R.; Ravi, G., E-mail: raviganesa@rediffmail.com, E-mail: gravicrc@gmail.com [Department of Physics, Alagappa University, Karaikudi – 630 004 (India); Mahalingam, T. [Department of Electrical and Computer Engineering, Ajou University, Suwon 443-749 (Korea, Republic of)

    2016-05-23

    In this work, p-n heterojunctions based on p-NiO and n-ZnO composite nanostructures were successfully deposited by sol-gel spin coating method. Structural investigations indicate well aligned ZnO nanorods with hexagonal faces having a preferential orientation along the c-axis (002). Scanning electron microscopy (SEM) was used to characterize, the p-n heterostructures formed grain like spherical structure of NiO fully covered the hexagonal rods of ZnO in the NiO/ZnO thin film and elements were confirmed from EDX analysis. PL and micro-Raman spectra of the deposited films showed the variation in luminescence and structural properties due to the formation of heterojuction of NiO.

  1. Electronic structure and magnetic properties of Ni-doped SnO2 thin films

    Science.gov (United States)

    Sharma, Mayuri; Kumar, Shalendra; Alvi, P. A.

    2018-05-01

    This paper reports the electronic structure and magnetic properties of Ni-doped SnO2 thin film which were grown on Si (100) substrate by PLD (pulse laser deposition) technique under oxygen partial pressure (PO2). For getting electronic structure and magnetic behavior, the films were characterized using near edge X-ray absorption fine structure spectroscopy (NEXAFS) and DC magnetization measurements. The NEXAFS study at Ni L3,2 edge has been done to understand the local environment of Ni and Sn ions within SnO2 lattice. DC magnetization measurement shows that the saturation magnetization increases with the increase in substitution of Ni2+ ions in the system.

  2. Ion beam-based characterization of multicomponent oxide thin films and thin film layered structures

    International Nuclear Information System (INIS)

    Krauss, A.R.; Rangaswamy, M.; Lin, Yuping; Gruen, D.M.; Schultz, J.A.; Schmidt, H.K.; Chang, R.P.H.

    1992-01-01

    Fabrication of thin film layered structures of multi-component materials such as high temperature superconductors, ferroelectric and electro-optic materials, and alloy semiconductors, and the development of hybrid materials requires understanding of film growth and interface properties. For High Temperature Superconductors, the superconducting coherence length is extremely short (5--15 Angstrom), and fabrication of reliable devices will require control of film properties at extremely sharp interfaces; it will be necessary to verify the integrity of thin layers and layered structure devices over thicknesses comparable to the atomic layer spacing. Analytical techniques which probe the first 1--2 atomic layers are therefore necessary for in-situ characterization of relevant thin film growth processes. However, most surface-analytical techniques are sensitive to a region within 10--40 Angstrom of the surface and are physically incompatible with thin film deposition and are typically restricted to ultra high vacuum conditions. A review of ion beam-based analytical methods for the characterization of thin film and multi-layered thin film structures incorporating layers of multicomponent oxides is presented. Particular attention will be paid to the use of time-of-flight techniques based on the use of 1- 15 key ion beams which show potential for use as nondestructive, real-time, in-situ surface diagnostics for the growth of multicomponent metal and metal oxide thin films

  3. Thin film ionic conductors based on cerium oxide

    International Nuclear Information System (INIS)

    Haridoss, P.; Hellstrom, E.; Garzon, F.H.; Brown, D.R.; Hawley, M.

    1994-01-01

    Fluorite and perovskite structure cerium oxide based ceramics are a class of materials that may exhibit good oxygen ion and/or protonic conductivity. The authors have successfully deposited thin films of these materials on a variety of substrates. Interesting orientation relationships were noticed between cerium oxide films and strontium titanate bi-crystal substrates. Near lattice site coincidence theory has been used to study these relationships

  4. Optical metrology of Ni and NiSi thin films used in the self-aligned silicidation process

    International Nuclear Information System (INIS)

    Kamineni, V. K.; Bersch, E. J.; Diebold, A. C.; Raymond, M.; Doris, B. B.

    2010-01-01

    The thickness-dependent optical properties of nickel metal and nickel monosilicide (NiSi) thin films, used for self-aligned silicidation process, were characterized using spectroscopic ellipsometry. The thickness-dependent complex dielectric function of nickel metal films is shown to be correlated with the change in Drude free electron relaxation time. The change in relaxation time can be traced to the change in grain boundary (GB) reflection coefficient and grain size. A resistivity based model was used as the complementary method to the thickness-dependent optical model to trace the change in GB reflection coefficient and grain size. After silicidation, the complex dielectric function of NiSi films exhibit non-Drude behavior due to superimposition of interband absorptions arising at lower frequencies. The Optical models of the complete film stack were refined using x-ray photoelectron spectroscopy, Rutherford backscattered spectroscopy, and x-ray reflectivity (XRR).

  5. Characterization of low-temperature microwave loss of thin aluminum oxide formed by plasma oxidation

    Energy Technology Data Exchange (ETDEWEB)

    Deng, Chunqing, E-mail: cdeng@uwaterloo.ca; Otto, M.; Lupascu, A., E-mail: alupascu@uwaterloo.ca [Institute for Quantum Computing, Department of Physics and Astronomy, and Waterloo Institute for Nanotechnology, University of Waterloo, Waterloo, Ontario N2L 3G1 (Canada)

    2014-01-27

    We report on the characterization of microwave loss of thin aluminum oxide films at low temperatures using superconducting lumped resonators. The oxide films are fabricated using plasma oxidation of aluminum and have a thickness of 5 nm. We measure the dielectric loss versus microwave power for resonators with frequencies in the GHz range at temperatures from 54 to 303 mK. The power and temperature dependence of the loss are consistent with the tunneling two-level system theory. These results are relevant to understanding decoherence in superconducting quantum devices. The obtained oxide films are thin and robust, making them suitable for capacitors in compact microwave resonators.

  6. Optical characterisation of thin film cadmium oxide prepared by a ...

    African Journals Online (AJOL)

    The optical transmission spectra of transparent conducting cadmium oxide (CdO) thin films deposited by a modified reactive evaporation process onto glass substrates have been measured. The interference fringes were used to calculate the refractive index, thickness variation, average thickness and absorption coefficient ...

  7. solution growth and characterization of copper oxide thin films ...

    African Journals Online (AJOL)

    Thin films of copper oxide (CuO) were grown on glass slides by using the solution growth technique. Copper cloride (CuCl ) and potassium telluride (K T O ) were used. Buffer 2 2e 3 solution was used as complexing agent. The solid state properties and optical properties were obtained from characterization done using PYE ...

  8. Nanoscale reduction of graphene oxide thin films and its characterization

    KAUST Repository

    Lorenzoni, M.; Giugni, Andrea; Di Fabrizio, Enzo M.; Pé rez-Murano, Francesc; Mescola, A.; Torre, Bruno

    2015-01-01

    In this paper, we report on a method to reduce thin films of graphene oxide (GO) to a spatial resolution better than 100 nm over several tens of micrometers by means of an electrochemical scanning probe based lithography. In situ tip

  9. Transparent conductive oxides for thin-film silicon solar cells

    NARCIS (Netherlands)

    Löffler, J.

    2005-01-01

    This thesis describes research on thin-film silicon solar cells with focus on the transparent conductive oxide (TCO) for such devices. In addition to the formation of a transparent and electrically conductive front electrode for the solar cell allowing photocurrent collection with low ohmic losses,

  10. Oriented growth of thin films of samarium oxide by MOCVD

    Indian Academy of Sciences (India)

    Unknown

    Very thin layers of rare earth oxides, such as Sm2O3 and epitaxial Gd2O3, grown by thermal ... As the inorganic salts of the lanthanides, such as their halides, are ... sodium hydroxide, followed by the addition of ethanolic. 1,10-phenanthroline ...

  11. Ellipsometric investigations of pyrolytically deposited thin indium oxide films

    International Nuclear Information System (INIS)

    Winkler, U.

    1980-01-01

    Ellipsometric measurements have been carried out of thin indium oxide films deposited pyrolytically on glass substrates. It was found that the roughness of the films affected the measuring results. Therefore, only after applying a two-layer model a reasonable interpretation of the measuring results became possible

  12. Valence control of cobalt oxide thin films by annealing atmosphere

    Energy Technology Data Exchange (ETDEWEB)

    Wang Shijing [School of Materials Science and Engineering, University of Science and Technology Beijing, No. 30 Xueyuan Road, Beijing 100083 (China); Zhang Boping, E-mail: bpzhang@ustb.edu.cn [School of Materials Science and Engineering, University of Science and Technology Beijing, No. 30 Xueyuan Road, Beijing 100083 (China); Zhao Cuihua; Li Songjie; Zhang Meixia; Yan Liping [School of Materials Science and Engineering, University of Science and Technology Beijing, No. 30 Xueyuan Road, Beijing 100083 (China)

    2011-02-01

    The cobalt oxide (CoO and Co{sub 3}O{sub 4}) thin films were successfully prepared using a spin-coating technique by a chemical solution method with CH{sub 3}OCH{sub 2}CH{sub 2}OH and Co(NO{sub 3}){sub 2}.6H{sub 2}O as starting materials. The grayish cobalt oxide films had uniform crystalline grains with less than 50 nm in diameter. The phase structure is able to tailor by controlling the annealing atmosphere and temperature, in which Co{sub 3}O{sub 4} thin film was obtained by annealing in air at 300-600, and N{sub 2} at 300, and transferred to CoO thin film by raising annealing temperature in N{sub 2}. The fitted X-ray photoelectron spectroscopy (XPS) spectra of the Co2p electrons are distinguishable from different valence states of cobalt oxide especially for their satellite structure. The valence control of cobalt oxide thin films by annealing atmosphere contributes to the tailored optical absorption property.

  13. RF magnetron sputtered TiNiCu shape memory alloy thin film

    International Nuclear Information System (INIS)

    Fu Yongqing; Du Hejun

    2003-01-01

    Shape memory alloys (SMAs) offer a unique combination of novel properties, such as shape memory effect, super-elasticity, biocompatibility and high damping capacity, and thin film SMAs have the potential to become a primary actuating mechanism for micro-actuators. In this study, TiNiCu films were successfully prepared by mix sputtering of a Ti 55 Ni 45 target with a separated Cu target. Crystalline structure, residual stress and phase transformation properties of the TiNiCu films were investigated using X-ray diffraction (XRD), differential scanning calorimeter (DSC), and curvature measurement methods. Effects of the processing parameters on the film composition, phase transformation and shape-memory effects were analyzed. Results showed that films prepared at a high Ar gas pressure exhibited a columnar structure, while films deposited at a low Ar gas pressure showed smooth and featureless structure. Chemical composition of TiNiCu thin films was dependent on the DC power of copper target. DSC, XRD and curvature measurement revealed clearly the martensitic transformation of the deposited TiNiCu films. When the free-standing film was heated and cooled, a 'two-way' shape-memory effect can be clearly observed

  14. A study on the electrodeposition of NiFe alloy thin films using chronocoulometry and electrochemical quartz crystal microgravimetry

    CERN Document Server

    Myung, N S

    2001-01-01

    Ni, Fe and NiFe alloy thin films were electrodeposited at a polycrystalline Au surface using a range of electrolytes and potentials. Coulometry and EQCM were used for real-time monitoring of electroplating efficiency of the Ni and Fe. The plating efficiency of NiFe alloy thin films was computed with the aid of ICP spectrometry. In general, plating efficiency increased to a steady value with deposition time. Plating efficiency of Fe was lower than that of Ni at -0.85 and -1.0 V but the efficiency approached to the similar plateau value to that of Ni at more negative potentials. The films with higher content of Fe showed different stripping behavior from the ones with higher content of Ni. Finally, compositional data and real-time plating efficiency are presented for films electrodeposited using a range of electrolytes and potentials.

  15. Effect of Substrate Roughness on Adhesion and Structural Properties of Ti-Ni Shape Memory Alloy Thin Film.

    Science.gov (United States)

    Kim, Donghwan; Lee, Hyunsuk; Bae, Joohyeon; Jeong, Hyomin; Choi, Byeongkeun; Nam, Taehyun; Noh, Jungpil

    2018-09-01

    Ti-Ni shape memory alloy (SMA) thin films are very attractive material for industrial and medical applications such as micro-actuator, micro-sensors, and stents for blood vessels. An important property besides shape memory effect in the application of SMA thin films is the adhesion between the film and the substrate. When using thin films as micro-actuators or micro-sensors in MEMS, the film must be strongly adhered to the substrate. On the other hand, when using SMA thin films in medical devices such as stents, the deposited alloy thin film must be easily separable from the substrate for efficient processing. In this study, we investigated the effect of substrate roughness on the adhesion of Ti-Ni SMA thin films, as well as the structural properties and phase-transformation behavior of the fabricated films. Ti-Ni SMA thin films were deposited onto etched glass substrates with magnetron sputtering. Radio frequency plasma was used for etching the substrate. The adhesion properties were investigated through progressive scratch test. Structural properties of the films were determined via Feld emission scanning electron microscopy, X-ray diffraction measurements (XRD) and Energy-dispersive X-ray spectroscopy analysis. Phase transformation behaviors were observed with differential scanning calorimetry and low temperature-XRD. Ti-Ni SMA thin film deposited onto rough substrate provides higher adhesive strength than smooth substrate. However the roughness of the substrate has no influence on the growth and crystallization of the Ti-Ni SMA thin films.

  16. Green synthesis of Ni-Nb oxide catalysts for low-temperature oxidative dehydrogenation of ethane

    KAUST Repository

    Zhu, Haibo

    2015-03-05

    The straightforward solid-state grinding of a mixture of Ni nitrate and Nb oxalate crystals led to, after mild calcination (T<400°C), nanostructured Ni-Nb oxide composites. These new materials efficiently catalyzed the oxidative dehydrogenation (ODH) of ethane to ethylene at a relatively low temperature (T<300°C). These catalysts appear to be much more stable than the corresponding composites prepared by other chemical methods; more than 90% of their original intrinsic activity was retained after 50h with time on-stream. Furthermore, the stability was much less affected by the Nb content than in composites prepared by classical "wet" syntheses. These materials, obtained in a solvent-free way, are thus promising green and sustainable alternatives to the current Ni-Nb candidates for the low-temperature ODH of ethane.

  17. Preparation and characterization of nanodiamond cores coated with a thin Ni-Zn-P alloy film

    International Nuclear Information System (INIS)

    Wang Rui; Ye Weichun; Ma Chuanli; Wang Chunming

    2008-01-01

    Nanodiamond cores coated with a thin Ni-Zn-P alloy film were prepared by an electroless deposition method under the conditions of tin chloride sensitization and palladium chloride activation. The prepared materials were analyzed by Fourier transform infrared (FTIR) spectrometry and X-ray diffraction (XRD). The nanostructure of the materials was then characterized by transmission electron microscopy (TEM). The alloy film composition was characterized by Energy Dispersive X-ray (EDX) analysis. The results indicated the approximate composition 49.84%Ni-37.29%Zn-12.88%P was obtained

  18. Magnetoviscoelastic characteristics of superparamagnetic oxides (Fe, Ni) based ferrofluids

    Energy Technology Data Exchange (ETDEWEB)

    Katiyar, Ajay, E-mail: ajay_k@ric.drdo.in [Research and Innovation Centre (DRDO), IIT Madras Research Park, Chennai 600113 (India); Department of Mechanical Engineering, Indian Institute of Technology Madras, Chennai 600036 (India); Dhar, Purbarun [Department of Mechanical Engineering, Indian Institute of Technology Ropar, Rupnagar, Punjab 140001 (India); Nandi, Tandra [Defence Materials and Stores Research and Development Establishment (DRDO), G.T. Road, Kanpur 208013 (India); Das, Sarit K. [Department of Mechanical Engineering, Indian Institute of Technology Madras, Chennai 600036 (India); Department of Mechanical Engineering, Indian Institute of Technology Ropar, Rupnagar, Punjab 140001 (India)

    2017-08-15

    Highlights: • The magnetoviscous effect in ferrofluids in the presence of magnetic field is investigated. • Oxides of Fe and Ni are dispersed in oil to formulate the ferrofluids. • Drastic enhancement in the yield stress and viscosity under the magnetic field is observed for Fe{sub 3}O{sub 4}-based ferrofluids. • Viscoelastic properties of the formulated ferrofluids demonstrate the strong function of magnetic field. • The increase in temperature reduces the magneto-viscous effect in ferrofluids under the magnetic field. - Abstract: Ferrofluids have been popular among the academic and scientific communities owing to their intelligent physical characteristics under external stimuli and are in fact among the first nanotechnology products to be employed in real world applications. However, studies on the magnetoviscoelastic behavior of concentrated ferrofluids, especially of superparamagnetic oxides of iron and nickel are rare. The present article comprises the formulation of magneto-colloids utilizing the three various metal oxides nanoparticles viz. Iron (II, III) oxide (Fe{sub 3}O{sub 4}), Iron (III) oxide (Fe{sub 2}O{sub 3}) and Nickel oxide (NiO) in oil. Iron (II, III) oxide based colloids demonstrate high magnetoviscous characteristics over the other oxides based colloids under external magnetic fields. The maximum magnitude of yield stress and viscosity is found to be 3.0 kPa and 2.9 kPa.s, respectively for iron (II, III) oxide based colloids at 2.6 vol% particle concentration and 1.2 T magnetic field. Experimental investigations reveal that the formulated magneto-nanocolloids are stable, even in high magnetic fields and almost reversible when exposed to rising and drop of magnetic fields of the same magnitude. Observations also reveal that the elastic behavior dominates over the viscous behavior with enhanced relaxation and creep characteristics under the magnetic field. The effect of temperature on viscosity and yield stress of magneto

  19. Review of Zinc Oxide Thin Films

    Science.gov (United States)

    2014-12-23

    remains more difficult [12, 13].    Recent  research on n‐type extrinsic doping with group  III elements  revealed  that  Aluminium   (Al), Boron (B) and...tuned by  alloying  with magnesium oxide or cadmium oxide   from 7.9 eV to 2.3 eV,  spanning from deep ultraviolet (UV) to visible regions of the...88].    Doping  to  increase  and/  or  control  n‐type  electrical  conductivity is commonly done with group III elements such as  aluminium , boron

  20. A Novel Nanomaterial of Graphene Oxide Dotted with Ni Nanoparticles Produced by Supercritical CO2-Assisted Deposition for Reducing Friction and Wear.

    Science.gov (United States)

    Meng, Yuan; Su, Fenghua; Chen, Yangzhi

    2015-06-03

    Graphene oxide dotted with nickel nanoparticles (Sc-Ni/GO) was synthesized by chemical deposition with the assistance of supercritical carbon dioxide (scCO2). The deposited Ni nanoparticles with diameters less than 5 nm are uniformly anchored on the surfaces of GO nanosheets. The as-prepared Sc-Ni/GO composites were employed as lubricating additives in paraffin oil and their tribological properties were tested using a four-ball tribometer. The results demonstrate that the Sc-Ni/GO composites are efficient lubricant additives. Adding 0.08 wt % Sc-Ni/GO into paraffin oil can reduce the friction coefficient and wear scar diameter by 32 and 42%, respectively, in comparison with the pure oil. In addition, Sc-Ni/GO composites exhibit superior lubricating performances than nano-Ni, GO nanosheets, and Ni/GO composites produced without the aid of scCO2. Such excellent lubricating properties of the Sc-Ni/GO composites derive from the synergistic lubricating actions of Ni nanoparticles and GO nanosheets during the rubbing process. The synergistic lubricating actions are closely related to the microstructure of the nanocomposites and the characteristic features of transfer film formed on the contact steel balls. The anchored Ni nanoparticles with smaller size and more uniform distribution on GO surfaces and the thin transfer film formed on the contact balls favor the full play of the synergistic actions.

  1. Magnetoviscoelastic characteristics of superparamagnetic oxides (Fe, Ni) based ferrofluids

    Science.gov (United States)

    Katiyar, Ajay; Dhar, Purbarun; Nandi, Tandra; Das, Sarit K.

    2017-08-01

    Ferrofluids have been popular among the academic and scientific communities owing to their intelligent physical characteristics under external stimuli and are in fact among the first nanotechnology products to be employed in real world applications. However, studies on the magnetoviscoelastic behavior of concentrated ferrofluids, especially of superparamagnetic oxides of iron and nickel are rare. The present article comprises the formulation of magneto-colloids utilizing the three various metal oxides nanoparticles viz. Iron (II, III) oxide (Fe3O4), Iron (III) oxide (Fe2O3) and Nickel oxide (NiO) in oil. Iron (II, III) oxide based colloids demonstrate high magnetoviscous characteristics over the other oxides based colloids under external magnetic fields. The maximum magnitude of yield stress and viscosity is found to be 3.0 kPa and 2.9 kPa.s, respectively for iron (II, III) oxide based colloids at 2.6 vol% particle concentration and 1.2 T magnetic field. Experimental investigations reveal that the formulated magneto-nanocolloids are stable, even in high magnetic fields and almost reversible when exposed to rising and drop of magnetic fields of the same magnitude. Observations also reveal that the elastic behavior dominates over the viscous behavior with enhanced relaxation and creep characteristics under the magnetic field. The effect of temperature on viscosity and yield stress of magneto-nanocolloids under magnetic fields has also been discussed. Thus, the present findings have potential applications in various fields such as electromagnetic clutch and brakes of automotive, damping, sealing, optics, nanofinishing etc.

  2. Reactive transport model of the formation of oxide-type Ni-laterite profiles (Punta Gorda, Moa Bay, Cuba)

    Science.gov (United States)

    Domènech, Cristina; Galí, Salvador; Villanova-de-Benavent, Cristina; Soler, Josep M.; Proenza, Joaquín A.

    2017-10-01

    Oxide-type Ni-laterite deposits are characterized by a dominant limonite zone with goethite as the economically most important Ni ore mineral and a thin zone of hydrous Mg silicate-rich saprolite beneath the magnesium discontinuity. Fe, less soluble, is mainly retained forming goethite, while Ni is redeposited at greater depth in a Fe(III) and Ni-rich serpentine (serpentine II) or in goethite, where it adsorbs or substitutes for Fe in the mineral structure. Here, a 1D reactive transport model, using CrunchFlow, of Punta Gorda oxide-type Ni-laterite deposit (Moa Bay, Cuba) formation is presented. The model reproduces the formation of the different laterite horizons in the profile from an initial, partially serpentinized peridotite, in 106 years, validating the conceptual model of the formation of this kind of deposits in which a narrow saprolite horizon rich in Ni-bearing serpentine is formed above peridotite parent rock and a thick limonite horizon is formed over saprolite. Results also confirm that sorption of Ni onto goethite can explain the weight percent of Ni found in the Moa goethite. Sensitivity analyses accounting for the effect of key parameters (composition, dissolution rate, carbonate concentration, quartz precipitation) on the model results are also presented. It is found that aqueous carbonate concentration and quartz precipitation significantly affects the laterization process rate, while the effect of the composition of secondary serpentine or of mineral dissolution rates is minor. The results of this reactive transport modeling have proven useful to validate the conceptual models derived from field observations.

  3. Altering properties of cerium oxide thin films by Rh doping

    International Nuclear Information System (INIS)

    Ševčíková, Klára; Nehasil, Václav; Vorokhta, Mykhailo; Haviar, Stanislav; Matolín, Vladimír

    2015-01-01

    Highlights: • Thin films of ceria doped by rhodium deposited by RF magnetron sputtering. • Concentration of rhodium has great impact on properties of Rh–CeO x thin films. • Intensive oxygen migration in films with low concentration of rhodium. • Oxygen migration suppressed in films with high amount of Rh dopants. - Abstract: Ceria containing highly dispersed ions of rhodium is a promising material for catalytic applications. The Rh–CeO x thin films with different concentrations of rhodium were deposited by RF magnetron sputtering and were studied by soft and hard X-ray photoelectron spectroscopies, Temperature programmed reaction and X-ray powder diffraction techniques. The sputtered films consist of rhodium–cerium mixed oxide where cerium exhibits a mixed valency of Ce 4+ and Ce 3+ and rhodium occurs in two oxidation states, Rh 3+ and Rh n+ . We show that the concentration of rhodium has a great influence on the chemical composition, structure and reducibility of the Rh–CeO x thin films. The films with low concentrations of rhodium are polycrystalline, while the films with higher amount of Rh dopants are amorphous. The morphology of the films strongly influences the mobility of oxygen in the material. Therefore, varying the concentration of rhodium in Rh–CeO x thin films leads to preparing materials with different properties

  4. Exchange bias coupling in NiO/Ni bilayer tubular nanostructures synthetized by electrodeposition and thermal oxidation

    Energy Technology Data Exchange (ETDEWEB)

    Yu, T., E-mail: work_tian@scu.edu.cn [College of Physical Science and Technology, Sichuan University, Chengdu 610064 (China); Zhang, Z.W.; Xu, Y.H. [College of Physical Science and Technology, Sichuan University, Chengdu 610064 (China); Liu, Y. [Analytical & Testing Center, Sichuan University, Chengdu 610064 (China); Li, W.J. [Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100190 (China); Nie, Y.; Zhang, X. [College of Physical Science and Technology, Sichuan University, Chengdu 610064 (China); Xiang, G., E-mail: gxiang@scu.edu.cn [College of Physical Science and Technology, Sichuan University, Chengdu 610064 (China)

    2017-05-01

    In this paper, we reported the synthesis of NiO/Ni bilayer nanotubes by electrodeposition and thermal oxidation using anodic aluminum oxide templates. The morphology, structure, chemical composition and magnetic properties, especially magnetic exchange bias induced by subsequent magnetic field cooling, in this one-dimensional antiferromagnetic/ferromagnetic hybrid system were investigated. It was found that the effect of the annealing temperature, which mainly dominated the thickness of the NiO layer, and the annealing time, which mainly dominated the grain size of the NiO, on the exchange bias field showed competitive relationship. The optimized exchange bias field was achieved by the combination of the shorter annealing time and higher annealing temperature. - Highlights: • NiO-Ni bilayer tubular nanotubes were fabricated by electrodeposition and thermal oxidation. • The exchange bias effect in NiO-Ni nanotubes was induced by magnetic field cooling. • The competitive effect of annealing temperature and annealing time on the exchange bias coupling was analyzed.

  5. Structural and Electromagnetic Properties of Ni-Mn-Ga Thin Films Deposited on Si Substrates

    Directory of Open Access Journals (Sweden)

    Pereira M. J.

    2014-07-01

    Full Text Available Ni2MnGa thin films raise great interest due to their properties, which provide them with strong potential for technological applications. Ni2MnGa thin films were prepared by r.f. sputtering deposition on Si substrates at low temperature (400 ºC. Film thicknesses in the range 10-120 nm were obtained. A study of the structural, magnetic and electrical properties of the films is presented. We find that the deposited films show some degree of crystallinity, with coexisting cubic and tetragonal structural phases, the first one being preponderant over the latter, particularly in the thinner films. The films possess soft magnetic properties and their coercivity is thickness dependent in the range 15-200 Oe at 300K. Electrical resistivity measurements signal the structural transition and suggest the occurrence of avalanche and return-point memory effects, in temperature cycling through the magnetic/structural transition range.

  6. Morphology selection for cupric oxide thin films by electrodeposition.

    Science.gov (United States)

    Dhanasekaran, V; Mahalingam, T; Chandramohan, R

    2011-10-01

    Polycrystalline cupric oxide thin films were deposited using alkaline solution bath employing cathodic electrodeposition method. The thin films were electrodeposited at various solution pH. The surface morphology and elemental analyzes of the films were studied using scanning electron microscopy (SEM) and energy dispersive X-ray analysis, respectively. SEM studies revealed that the surface morphology could be tailored suitably by adjusting the pH value during deposition. Mesh average on multiple lattice mode atomic force microscopy image was obtained and reported. Copyright © 2011 Wiley-Liss, Inc.

  7. Room temperature magnetocaloric effect in Ni-Mn-In-Cr ferromagnetic shape memory alloy thin films

    Energy Technology Data Exchange (ETDEWEB)

    Akkera, Harish Sharma [Functionalnanomaterials Research Lab, Department of Physics, Indian Institute of Technology Roorkee, Uttarakhand-247667 (India); Singh, Inderdeep [Mechanical and Industrial Engineering Department, Indian Institute of Technology Roorkee, Uttarakhand-24667 (India); Kaur, Davinder, E-mail: dkaurfph@iitr.ernet.in [Functionalnanomaterials Research Lab, Department of Physics, Indian Institute of Technology Roorkee, Uttarakhand-247667 (India)

    2017-02-15

    The influence of Cr substitution for In on the martensitic phase transformation and magnetocaloric effect (MCE) has been investigated in Ni-Mn-Cr-In ferromagnetic shape memory alloy (FSMA) thin films fabricated by magnetron sputtering. Temperature dependent magnetization (M-T) measurements demonstrated that the martensitic transformation temperatures (T{sub M}) monotonously increase with the increase of Cr content due to change in valence electron concentration (e/a) and cell volume. From the study of isothermal magnetization curves (M-H), magnetocaloric effect around the martensitic transformation has been investigated in these FSMA thin films. The magnetic entropy change ∆S{sub M} of 7.0 mJ/cm{sup 3}-K was observed in Ni{sub 51.1}Mn{sub 34.9}In{sub 9.5}Cr{sub 4.5} film at 302 K in an applied field of 2 T. Further, the refrigerant capacity (RC) was also calculated for all the films in an applied field of 2 T. These findings indicate that the Cr doped Ni-Mn-In FSMA thin films are potential candidates for room temperature micro-length-scale magnetic refrigeration applications. - Highlights: • The Cr content leads to an increase in the martensitic transformation temperature. • The ∆S{sub M} =7 mJ/cm{sup 3}-K at 302 K was observed in the Ni{sub 51.1}Mn{sub 34.9}In{sub 9.5}Cr{sub 4.5}. • The RC =39.2 mJ/K at 2 T was obtained in Ni{sub 51.1}Mn{sub 34.9}In{sub 9.5}Cr{sub 4.5} film.

  8. Spin glass transition in a thin-film NiO/permalloy bilayer

    Science.gov (United States)

    Ma, Tianyu; Urazhdin, Sergei

    2018-02-01

    We experimentally study magnetization aging in a thin-film NiO/permalloy bilayer. Aging characteristics are nearly independent of temperature below the exchange bias blocking temperature TB, but rapidly vary above it. The dependence on the magnetic history qualitatively changes across TB. The observed behaviors are consistent with the spin glass transition at TB, with significant implications for magnetism and magnetoelectronic phenomena in antiferromagnet/ferromagnet bilayers.

  9. Au Nanoparticle Sub-Monolayers Sandwiched between Sol-Gel Oxide Thin Films

    Science.gov (United States)

    Della Gaspera, Enrico; Menin, Enrico; Sada, Cinzia

    2018-01-01

    Sub-monolayers of monodisperse Au colloids with different surface coverage have been embedded in between two different metal oxide thin films, combining sol-gel depositions and proper substrates functionalization processes. The synthetized films were TiO2, ZnO, and NiO. X-ray diffraction shows the crystallinity of all the oxides and verifies the nominal surface coverage of Au colloids. The surface plasmon resonance (SPR) of the metal nanoparticles is affected by both bottom and top oxides: in fact, the SPR peak of Au that is sandwiched between two different oxides is centered between the SPR frequencies of Au sub-monolayers covered with only one oxide, suggesting that Au colloids effectively lay in between the two oxide layers. The desired organization of Au nanoparticles and the morphological structure of the prepared multi-layered structures has been confirmed by Rutherford backscattering spectrometry (RBS), Secondary Ion Mass Spectrometry (SIMS), and Scanning Electron Microscopy (SEM) analyses that show a high quality sandwich structure. The multi-layered structures have been also tested as optical gas sensors. PMID:29538338

  10. Thermal stability analysis of thin film Ni-NiOx-Cr tunnel junctions

    International Nuclear Information System (INIS)

    Krishnan, S.; Emirov, Y.; Bhansali, S.; Stefanakos, E.; Goswami, Y.

    2010-01-01

    This research reports on the thermal stability of Ni-NiO x -Cr based Metal-Insulator-Metal (MIM) junction. Effect of annealing (250 to 400 o C) on the electrical and physical transport properties of this MIM stack was understood to determine the thermal budget allowable when using these diodes. MIM tunnel junctions were fabricated by sputtering and the NiO x was formed through reactive sputtering. The performance of the tunnel junctions after exposure to elevated temperatures was investigated using current-voltage measurements. This was correlated to the structural properties of the interfaces at different temperatures, characterized by Atomic Force Microscopy, X-ray Diffraction and Transmission Electron Microscopy (TEM). MIM tunnel junctions annealed up to 350 o C demonstrated satisfactory current-voltage characteristics and sensitivity. MIM junctions exhibited improved electrical performance as they were heated to 250 o C (sensitivity of 42 V -1 and a zero-bias resistance of ∼300 Ω) due to improved crystallization of the layers within the stack. At temperatures over 350 o C, TEM and Energy Dispersive Spectra confirmed a breakdown of the MIM structure due to interdiffusion.

  11. Fabrication and characterization of NiO thin films prepared by SILAR method

    International Nuclear Information System (INIS)

    Akaltun, Yunus; Çayır, Tuba

    2015-01-01

    Highlights: • NiO thin films have been deposited on glass substrates using SILAR method for the first time. • The electron effective mass, refractive index were calculated by using the energy bandgap values. • The effect of film thickness on the structural, optical and electrical properties were studied. • The bandgap values of the films decreased from 3.71 to 3.67 eV. - Abstract: NiO thin films were synthesised on glass substrates at room temperature using the Successive Ionic Layer Adsorption and Reaction (SILAR) method. The effect of film thickness on the structural, morphological, optical and electrical properties of NiO thin films was investigated. The X-ray diffraction (XRD) and scanning electron microscopy (SEM) studies showed that all the films exhibit polycrystalline structure are covered well with glass substrates. The crystalline and surface properties of the films improved with increasing film thickness. The energy band gap values were decreased from 3.71 to 3.67 eV depending on the film thickness. The refractive index (n), optical static (ε o ) and high frequency dielectric constant (ε ∞ ) values were calculated by using the energy band gap values as a function of the film thickness. The resistivity of the films varied between 4.1 and 802.1 Ω cm with increasing film thickness at room temperature

  12. Fabrication and characterization of NiO thin films prepared by SILAR method

    Energy Technology Data Exchange (ETDEWEB)

    Akaltun, Yunus [Department of Electrical and Electronic Engineering, Erzincan University, 24100 Erzincan (Turkey); Çayır, Tuba [Department of Biomedical Engineering, Erzincan University, 24100 Erzincan (Turkey)

    2015-03-15

    Highlights: • NiO thin films have been deposited on glass substrates using SILAR method for the first time. • The electron effective mass, refractive index were calculated by using the energy bandgap values. • The effect of film thickness on the structural, optical and electrical properties were studied. • The bandgap values of the films decreased from 3.71 to 3.67 eV. - Abstract: NiO thin films were synthesised on glass substrates at room temperature using the Successive Ionic Layer Adsorption and Reaction (SILAR) method. The effect of film thickness on the structural, morphological, optical and electrical properties of NiO thin films was investigated. The X-ray diffraction (XRD) and scanning electron microscopy (SEM) studies showed that all the films exhibit polycrystalline structure are covered well with glass substrates. The crystalline and surface properties of the films improved with increasing film thickness. The energy band gap values were decreased from 3.71 to 3.67 eV depending on the film thickness. The refractive index (n), optical static (ε{sub o}) and high frequency dielectric constant (ε{sub ∞}) values were calculated by using the energy band gap values as a function of the film thickness. The resistivity of the films varied between 4.1 and 802.1 Ω cm with increasing film thickness at room temperature.

  13. Hydrogen Gas Sensing Characteristics of Nanostructured NiO Thin Films Synthesized by SILAR Method

    Science.gov (United States)

    Karaduman, Irmak; Çorlu, Tugba; Yıldırım, M. Ali; Ateş, Aytunç; Acar, Selim

    2017-07-01

    Nanostructured NiO thin films have been synthesized by a facile, low-cost successive ionic layer adsorption and reaction (SILAR) method, and the effects of the film thickness on their hydrogen gas sensing properties investigated. The samples were characterized by scanning electron microscopy (SEM), x-ray diffraction (XRD) analysis, and energy-dispersive x-ray analysis. The XRD results revealed that the crystallinity improved with increasing thickness, exhibiting polycrystalline structure. SEM studies showed that all the films covered the glass substrate well. According to optical absorption measurements, the optical bandgap decreased with increasing film thickness. The gas sensing properties of the nanostructured NiO thin films were studied as a function of operating temperature and gas concentration. The samples showed good sensing performance of H2 gas with high response. The maximum response was 75% at operating temperature of 200°C for hydrogen gas concentration of 40 ppm. These results demonstrate that nanostructured NiO thin films synthesized by the SILAR method have potential for application in hydrogen detection.

  14. Electronic properties of thermally formed thin iron oxide films

    International Nuclear Information System (INIS)

    Wielant, J.; Goossens, V.; Hausbrand, R.; Terryn, H.

    2007-01-01

    The oxide layer, present between an organic coating and the substrate, guarantees adhesion of the coating and plays a determinating role in the delamination rate of the organic coating. The purpose of this study is to compare the resistive and semiconducting properties of thermal oxides formed on steel in two different atmospheres at 250 deg. C: an oxygen rich atmosphere, air, and an oxygen deficient atmosphere, N 2 . In N 2 , a magnetite layer grows while in air a duplex oxide film forms composed by an inner magnetite layer and a thin outer hematite scale. The heat treatment for different amounts of time at high temperature was used as method to sample the thickness variation and change in electronic and semiconducting properties of the thermal oxide layers. Firstly, linear voltammetric measurements were performed to have a first insight in the electrochemical behavior of the thermal oxides in a borate buffer solution. Electrochemical impedance spectroscopy in the same buffer combined with the Mott-Schottky analysis were used to determine the semiconducting properties of the thermal oxides. By spectroscopic ellipsometry (SE) and atomic force microscopy (AFM), respectively, the thickness and roughness of the oxide layers were determined supporting the physical interpretation of the voltammetric and EIS data. These measurements clearly showed that oxide layers with different constitution, oxide resistance, flatband potential and doping concentration can be grown by changing the atmosphere

  15. Room temperature ferromagnetism in undoped and Ni doped In{sub 2}O{sub 3} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Krishna, N. Sai; Kaleemulla, S., E-mail: skaleemulla@gmail.com; Rao, N. Madhusudhana; Krishnamoorthi, C.; Begam, M. Rigana [Thin Films Laboratory, School of Advanced Sciences, VIT University, Vellore – 632014 (India); Amarendra, G. [Materials Science Group, Indira Gandhi Centre for Atomic Research, Kalpakkam – 603102 (India); UGC-DAE-CSR, Kalpakkam Node, Kokilamedu-603104 (India)

    2015-06-24

    Undoped and Ni (5 at.%) doped In{sub 2}O{sub 3} thin films were deposited on glass substrate using electron beam evaporation technique and Ni doped In{sub 2}O{sub 3} thin films were annealed at 450 oC. A systematic study was carried out on the structural, chemical and magnetic properties of the as deposited and annealed thin films. X-ray diffraction analysis revealed that all the films were cubic in structure and exhibied ferromagnetism at room temperature. The undoped In{sub 2}O{sub 3} thin films exhibited a saturation magnetization of 24.01 emu/cm3. Ni doped In{sub 2}O{sub 3} thin films annealed at 450 oC showed a saturation magnetization of 53.81 emu/cm3.

  16. Magnetron sputtered Cu{sub 3}N/NiTiCu shape memory thin film heterostructures for MEMS applications

    Energy Technology Data Exchange (ETDEWEB)

    Kaur, Navjot; Choudhary, Nitin [Indian Institute of Technology Roorkee, Roorkee, Functional Nanomaterials Research Lab, Department of Physics and Centre of Nanotechnology (India); Goyal, Rajendra N. [Indian Institute of Technology, Roorkee, Department of Chemistry (India); Viladkar, S. [Indian Institute of Technology Roorkee, Roorkee, Functional Nanomaterials Research Lab, Department of Physics and Centre of Nanotechnology (India); Matai, I.; Gopinath, P. [Indian Institute of Technology, Roorkee, Centre for Nanotechnology (India); Chockalingam, S. [Indian Institute of Technology, Guwahati, Department of Biotechnology (India); Kaur, Davinder, E-mail: dkaurfph@iitr.ernet.in [Indian Institute of Technology Roorkee, Roorkee, Functional Nanomaterials Research Lab, Department of Physics and Centre of Nanotechnology (India)

    2013-03-15

    In the present study, for the first time, Cu{sub 3}N/NiTiCu/Si heterostructures were successfully grown using magnetron sputtering technique. Nanocrystalline copper nitride (Cu{sub 3}N with thickness {approx}200 nm) thin films and copper nanodots were subsequently deposited on the surface of 2-{mu}m-thick NiTiCu shape memory thin films in order to improve the surface corrosion and nickel release properties of NiTiCu thin films. Interestingly, the phase transformation from martensite phase to austenite phase has been observed in Cu{sub 3}N/NiTiCu heterostructures with corresponding change in texture and surface morphology of top Cu{sub 3}N films. Field emission scanning electron microscopy and atomic force microscope images of the heterostructures reveals the formation of 20-nm-sized copper nanodots on NiTiCu surface at higher deposition temperature (450 Degree-Sign C) of Cu{sub 3}N. Cu{sub 3}N passivated NiTiCu films possess low corrosion current density with higher corrosion potential and, therefore, better corrosion resistance as compared to pure NiTiCu films. The concentration of Ni released from the Cu{sub 3}N/NiTiCu samples was observed to be much less than that of pure NiTiCu film. It can be reduced to the factor of about one-ninth after the surface passivation resulting in smooth, homogeneous and highly corrosion resistant surface. The antibacterial and cytotoxicity of pure and Cu{sub 3}N coated NiTiCu thin films were investigated through green fluorescent protein expressing E. coli bacteria and human embryonic kidney cells. The results show the strong antibacterial property and non cytotoxicity of Cu{sub 3}N/NiTiCu heterostructure. This work is of immense technological importance due to variety of BioMEMS applications.

  17. Nanoporous cerium oxide thin film for glucose biosensor.

    Science.gov (United States)

    Saha, Shibu; Arya, Sunil K; Singh, S P; Sreenivas, K; Malhotra, B D; Gupta, Vinay

    2009-03-15

    Nanoporous cerium oxide (CeO(2)) thin film deposited onto platinum (Pt) coated glass plate using pulsed laser deposition (PLD) has been utilized for immobilization of glucose oxidase (GOx). Atomic force microscopy studies reveal the formation of nanoporous surface morphology of CeO(2) thin film. Response studies carried out using differential pulsed voltammetry (DPV) and optical measurements show that the GOx/CeO(2)/Pt bio-electrode shows linearity in the range of 25-300 mg/dl of glucose concentration. The low value of Michaelis-Menten constant (1.01 mM) indicates enhanced enzyme affinity of GOx to glucose. The observed results show promising application of the nanoporous CeO(2) thin film for glucose sensing application without any surface functionalization or mediator.

  18. Investigation of the magnetic properties of electrodeposited NiFe thin films

    International Nuclear Information System (INIS)

    Bakkaloglu, O. F.; Bedir, M.; Oeztas, M.; Karahan, I. H.

    2002-01-01

    Most magnetic devices used today are based on the magnetic thin film. Rapid and extensive developments in magnetic sensor / actuator and magnetic recording technology place a growing demand on the use of different thin film fabrication techniques for magnetic materials. The electroplating technique is especially interesting due to its low cost, high throughput and high quality of the deposits which are extensively used in the magnetic recording industry to deposit relatively thick permalloy layers. Much recent attention has focused on the electrodeposited NiFe thin films, which exhibit giant magneto resistive behaviour as well as anisotropic magnetoresistance properties. n this study, NiFe thin films were developed by using electrodeposition technique and their crystallinity structures were investigated by using x-ray diffractometer measurements. The magneto resistive properties of the samples were investigated by Wan der Pauw method with a home made electromagnet under the different magnetic fields. The magnetoresistance measurements of the samples were carried out in two configurations; current parallel ( longitudinal ) and perpendicular ( transverse ) to the magnetic field. In the longitudinal configuration giant magnetoresistance was observed while anisotropic magnetoresistance was detected in the other configuration

  19. Effects of interfacial Fe electronic structures on magnetic and electronic transport properties in oxide/NiFe/oxide heterostructures

    International Nuclear Information System (INIS)

    Liu, Qianqian; Chen, Xi; Zhang, Jing-Yan; Yang, Meiyin; Li, Xu-Jing; Jiang, Shao-Long; Liu, Yi-Wei; Cao, Yi; Wu, Zheng-Long; Feng, Chun; Ding, Lei; Yu, Guang-Hua

    2015-01-01

    Highlights: • The magnetic and transport properties of oxide/NiFe/oxide films were studied. • The oxide (SiO 2 , MgO and HfO 2 ) has different elemental electronegativity. • Redox reaction at different NiFe/oxide interface is dependent on the oxide layer. • Different interfacial electronic structures shown by XPS influence the properties. - Abstract: We report that the magnetic and electronic transport properties in oxide/NiFe(2 nm)/oxide film (oxide = SiO 2 , MgO or HfO 2 ) are strongly influenced by the electronic structure of NiFe/oxide interface. Magnetic measurements show that there exist magnetic dead layers in the SiO 2 sandwiched film and MgO sandwiched film, whereas there is no magnetic dead layer in the HfO 2 sandwiched film. Furthermore, in the ultrathin SiO 2 sandwiched film no magnetoresistance (MR) is detected, while in the ultrathin MgO sandwiched film and HfO 2 sandwiched film the MR ratios reach 0.35% and 0.88%, respectively. The investigation by X-ray photoelectron spectroscopy reveals that the distinct interfacial redox reactions, which are dependent on the oxide layers, lead to the variation of magnetic and transport properties in different oxide/NiFe/oxide heterostructures

  20. Cuprous oxide thin films grown by hydrothermal electrochemical deposition technique

    International Nuclear Information System (INIS)

    Majumder, M.; Biswas, I.; Pujaru, S.; Chakraborty, A.K.

    2015-01-01

    Semiconducting cuprous oxide films were grown by a hydrothermal electro-deposition technique on metal (Cu) and glass (ITO) substrates between 60 °C and 100 °C. X-ray diffraction studies reveal the formation of cubic cuprous oxide films in different preferred orientations depending upon the deposition technique used. Film growth, uniformity, grain size, optical band gap and photoelectrochemical response were found to improve in the hydrothermal electrochemical deposition technique. - Highlights: • Cu 2 O thin films were grown on Cu and glass substrates. • Conventional and hydrothermal electrochemical deposition techniques were used. • Hydrothermal electrochemical growth showed improved morphology, thickness and optical band gap

  1. Effects of Thermal Annealing Conditions on Cupric Oxide Thin Film

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Hyo Seon; Oh, Hee-bong; Ryu, Hyukhyun [Inje University, Gimhae (Korea, Republic of); Lee, Won-Jae [Dong-Eui University, Busan (Korea, Republic of)

    2015-07-15

    In this study, cupric oxide (CuO) thin films were grown on fluorine doped tin oxide(FTO) substrate by using spin coating method. We investigated the effects of thermal annealing temperature and thermal annealing duration on the morphological, structural, optical and photoelectrochemical properties of the CuO film. From the results, we could find that the morphologies, grain sizes, crystallinity and photoelectrochemical properties were dependent on the annealing conditions. As a result, the maximum photocurrent density of -1.47 mA/cm{sup 2} (vs. SCE) was obtained from the sample with the thermal annealing conditions of 500 ℃ and 40 min.

  2. Tantalum oxide thin films as protective coatings for sensors

    DEFF Research Database (Denmark)

    Christensen, Carsten; Reus, Roger De; Bouwstra, Siebe

    1999-01-01

    Reactively sputtered tantalum oxide thin films have been investigated as protective coatings for aggressive media exposed sensors. Tantalum oxide is shown to be chemically very robust. The etch rate in aqueous potassium hydroxide with pH 11 at 140°C is lower than 0.008 Å h-l. Etching in liquids...... with pH values in the range from pH 2 to 11 have generally given etch rates below 0.04 Å h-l. On the other hand patterning is possible in hydrofluoric acid. Further, the passivation behaviour of amorphous tantalum oxide and polycrystalline Ta2O5 is different in buffered hydrofluoric acid. By ex situ...... annealing O2 in the residual thin-film stress can be altered from compressive to tensile and annealing at 450°C for 30 minutes gives a stress-free film. The step coverage of the sputter deposited amorphous tantalum oxide is reasonable, but metallization lines are hard to cover. Sputtered tantalum oxide...

  3. Tantalum oxide thin films as protective coatings for sensors

    DEFF Research Database (Denmark)

    Christensen, Carsten; Reus, Roger De; Bouwstra, Siebe

    1999-01-01

    Reactively sputtered tantalum oxide thin-films have been investigated as protective coating for aggressive media exposed sensors. Tantalum oxide is shown to be chemically very robust. The etch rate in aqueous potassium hydroxide with pH 11 at 140°C is lower than 0.008 Å/h. Etching in liquids with p......H values in the range from pH 2-11 have generally given etch rates below 0.04 Å/h. On the other hand patterning is possible in hydrofluoric acid. Further, the passivation behaviour of amorphous tantalum oxide and polycrystalline Ta2O5 is different in buffered hydrofluoric acid. By ex-situ annealing in O2...... the residual thin-film stress can be altered from compressive to tensile and annealing at 450°C for 30 minutes gives a stress-free film. The step coverage of the sputter deposited amorphous tantalum oxide is reasonable, but metallisation lines are hard to cover. Sputtered tantalum oxide exhibits high...

  4. High temperature oxidation of thin FeCrAl strips

    International Nuclear Information System (INIS)

    Andrieu, E.; Germidis, A.; Molins, R.

    1997-01-01

    This study concerns the oxidation behaviour between 850 and 1100 C of FeCrAl thin strips. Oxidation kinetics have been continuously recorded on a thermobalance as well as discontinuously in an ''industrial'' furnace. Detailed observations of oxide layers have been performed in transmission electron microscopy on oxidized thin foil cross-sections. Oxide morphologies are correlated with kinetics: Slow kinetics and columnar α alumina grains above 950 C, fast kinetics and transition alumina platelets (γ-alumina) at 850 C and 900 C, followed by small α-alumina grains formation underneath. The weight gains in the industrial furnace displayed significant scatter and were generally greater than those measured in the thermobalance. The effect of extrinsic factors such as specimen size and shape, atmosphere, air flow conditions on the early formation of transition aluminas explains the observed differences. It appears then that in given cases parabolic constant identification from TGA recordings is difficult, or even impossible. This might contribute to explain the differences in the results presented in the literature. (orig.)

  5. Moessbauer and XRD study of pulse plated Fe-P and Fe-Ni thin layers

    Energy Technology Data Exchange (ETDEWEB)

    Miko, Annamaria [Bay Zoltan Institute for Material Science (Hungary); Kuzmann, Erno, E-mail: kuzmann@para.chem.elte.hu [Eoetvoes Lorand University, Research Group for Nuclear Methods in Structural Chemistry, Hungarian Academy of Sciences, Department of Nuclear Chemistry (Hungary); Lakatos-Varsanyi, Magda [Bay Zoltan Institute for Material Science (Hungary); Kakay, Attila [Research Institute for Solid State Physics and Optics (Hungary); Nagy, Ferenc [Eoetvoes Lorand University, Research Group for Nuclear Methods in Structural Chemistry, Hungarian Academy of Sciences, Department of Nuclear Chemistry (Hungary); Varga, Lajos Karoly [Research Institute for Solid State Physics and Optics (Hungary)

    2005-09-15

    {sup 57}Fe conversion electron Moessbauer spectroscopy, X-ray diffraction, electrochemical and magnetic measurements were used to study pulse electroplated Fe-P and Ni-Fe coatings. XRD and {sup 57}Fe CEMS measurements revealed the amorphous character of the novel pulse plated Fe-P alloys. CEM spectra indicated significant differences in the short range order and in the magnetic anisotropy between the Fe-P deposits pulse plated at medium long deposition time (t{sub on} = 2 ms), with short relaxation time (t{sub off} = 9 ms) and low current density (I{sub p} = 0.05 Acm{sup -2}) or at short deposition time (t{sub on} = 1 ms) with long relaxation time (t{sub off} = 250 ms) and high current density (I{sub p} = 1.0 Acm{sup -2}). The broad peaks centred around the fcc reflections in XRD of the pulse plated Ni-22 wt.% Fe deposit reflected a microcrystalline Ni-Fe alloy with a very fine, 5-8 nm, grain size. The CEM spectrum of the pulse plated Ni-22 wt.% Fe coating corresponded to a highly disordered solid solution alloy containing a minute amount of ferrihydrite. Extreme favourable soft magnetic properties were observed with these Ni-Fe and Fe-P pulse plated thin layers.

  6. Moessbauer and XRD study of pulse plated Fe-P and Fe-Ni thin layers

    International Nuclear Information System (INIS)

    Miko, Annamaria; Kuzmann, Erno; Lakatos-Varsanyi, Magda; Kakay, Attila; Nagy, Ferenc; Varga, Lajos Karoly

    2005-01-01

    57 Fe conversion electron Moessbauer spectroscopy, X-ray diffraction, electrochemical and magnetic measurements were used to study pulse electroplated Fe-P and Ni-Fe coatings. XRD and 57 Fe CEMS measurements revealed the amorphous character of the novel pulse plated Fe-P alloys. CEM spectra indicated significant differences in the short range order and in the magnetic anisotropy between the Fe-P deposits pulse plated at medium long deposition time (t on = 2 ms), with short relaxation time (t off = 9 ms) and low current density (I p = 0.05 Acm -2 ) or at short deposition time (t on = 1 ms) with long relaxation time (t off = 250 ms) and high current density (I p = 1.0 Acm -2 ). The broad peaks centred around the fcc reflections in XRD of the pulse plated Ni-22 wt.% Fe deposit reflected a microcrystalline Ni-Fe alloy with a very fine, 5-8 nm, grain size. The CEM spectrum of the pulse plated Ni-22 wt.% Fe coating corresponded to a highly disordered solid solution alloy containing a minute amount of ferrihydrite. Extreme favourable soft magnetic properties were observed with these Ni-Fe and Fe-P pulse plated thin layers.

  7. Aluminum doped nickel oxide thin film with improved electrochromic performance from layered double hydroxides precursor in situ pyrolytic route

    Energy Technology Data Exchange (ETDEWEB)

    Shi, Jingjing; Lai, Lincong; Zhang, Ping; Li, Hailong; Qin, Yumei; Gao, Yuanchunxue; Luo, Lei; Lu, Jun, E-mail: lujun@mail.buct.edu.cn

    2016-09-15

    Electrochromic materials with unique performance arouse great interest on account of potential application values in smart window, low-power display, automobile anti-glare rearview mirror, and e-papers. In this paper, high-performing Al-doped NiO porous electrochromic film grown on ITO substrate has been prepared via a layered double hydroxides(LDHs) precursor in situ pyrolytic route. The Al{sup 3+} ions distributed homogenously within the NiO matrix can significantly influence the crystallinity of Ni-Al LDH and NiO:Al{sup 3+} films. The electrochromic performance of the films were evaluated by means of UV–vis absorption spectroscopy, cyclic voltammetry (CV), electrochemical impedance spectroscopy (EIS), and chronoamperometry(CA) measurements. In addition, the ratio of Ni{sup 3+}/Ni{sup 2+} also varies with Al content which can lead to different electrochemical performances. Among the as-prepared films, NiO film prepared from Ni-Al (19:1) LDH show the best electrochromic performance with a high transparency of 96%, large optical modulation range (58.4%), fast switching speed (bleaching/coloration times are 1.8/4.2 s, respectively) and excellent durability (30% decrease after 2000 cycles). The improved performance was owed to the synergy of large NiO film specific surface area and porous morphology, as well as Al doping stifled the formation of Ni{sup 3+} making bleached state more pure. This LDHs precursor pyrolytic method is simple, low-cost and environmental benign and is feasible for the preparation of NiO:Al and other Al-doped oxide thin film. - Graphical abstract: The ratio of Ni{sup 3+}/Ni{sup 2+} varies with Al content which can lead to different electrochemical performances. Among the as-prepared films, NiO film prepared from Ni-Al (19:1) LDH show the best electrochromic performance with a high transparency of 96%, large optical modulation range, fast switching speed and excellent durability. Display Omitted.

  8. Structural and optical properties of electrodeposited molybdenum oxide thin films

    International Nuclear Information System (INIS)

    Patil, R.S.; Uplane, M.D.; Patil, P.S.

    2006-01-01

    Electrosynthesis of Mo(IV) oxide thin films on F-doped SnO 2 conducting glass (10-20/Ω/□) substrates were carried from aqueous alkaline solution of ammonium molybdate at room temperature. The physical characterization of as-deposited films carried by thermogravimetric/differential thermogravimetric analysis (TGA/DTA), infrared spectroscopy and X-ray diffraction (XRD) showed the formation of hydrous and amorphous MoO 2 . Scanning electron microscopy (SEM) revealed a smooth but cracked surface with multi-layered growth. Annealing of these films in dry argon at 450 deg. C for 1 h resulted into polycrystalline MoO 2 with crystallites aligned perpendicular to the substrate. Optical absorption study indicated a direct band gap of 2.83 eV. The band gap variation consistent with Moss rule and band gap narrowing upon crystallization was observed. Structure tailoring of as-deposited thin films by thermal oxidation in ambient air to obtain electrochromic Mo(VI) oxide thin films was exploited for the first time by this novel route. The results of this study will be reported elsewhere

  9. Non-enzymatic hydrogen peroxide detection at NiO nanoporous thin film- electrodes prepared by physical vapor deposition at oblique angles

    International Nuclear Information System (INIS)

    Salazar, Pedro; Rico, Victor; González-Elipe, Agustín R.

    2017-01-01

    Highlights: • A non-enzymatic sensor for H 2 O 2 detection based on nickel thin film is reported. • Nanostructured nickel thin films are prepared by physical vapor deposition at oblique angles. • Main analytical parameters were obtained under optimal operation conditions. • Sensors depict an outstanding selectivity and a high stability. • Sensors are successfully used to determine H 2 O 2 in antiseptic solutions. - Abstract: In this work we report a non-enzymatic sensor for hydrogen peroxide (H 2 O 2 ) detection based on nanostructured nickel thin films prepared by physical vapor deposition at oblique angles. Porous thin films deposited on ITO substrates were characterized by X-ray diffraction analysis, scanning electron microcopy (SEMs), X-ray photoelectron spectroscopy (XPS) and electrochemical techniques such as Cyclic Voltammetry (CV) and Constant Potential Amperometry (CPA). The microstructure of the thin films consisted of inclined and separated Ni nanocolumns forming a porous thin layer of about 500 nm thickness. Prior to their use, the films surface was electrochemically modified and the chemical state studied by CV and XPS analysis. These techniques also showed that Ni 2+ /Ni 3+ species were involved in the electrochemical oxidation and detection of H 2 O 2 in alkaline medium. Main analytical parameters such as sensitivity (807 mA M −1 cm −2 ), limit of detection (3.22 μM) and linear range (0.011–2.4 mM) were obtained under optimal operation conditions. Sensors depicted an outstanding selectivity and a high stability and they were successfully used to determine H 2 O 2 concentration in commercial antiseptic solutions.

  10. Porous Zinc Oxide Thin Films: Synthesis Approaches and Applications

    Directory of Open Access Journals (Sweden)

    Marco Laurenti

    2018-02-01

    Full Text Available Zinc oxide (ZnO thin films have been widely investigated due to their multifunctional properties, i.e., catalytic, semiconducting and optical. They have found practical use in a wide number of application fields. However, the presence of a compact micro/nanostructure has often limited the resulting material properties. Moreover, with the advent of low-dimensional ZnO nanostructures featuring unique physical and chemical properties, the interest in studying ZnO thin films diminished more and more. Therefore, the possibility to combine at the same time the advantages of thin-film based synthesis technologies together with a high surface area and a porous structure might represent a powerful solution to prepare ZnO thin films with unprecedented physical and chemical characteristics that may find use in novel application fields. Within this scope, this review offers an overview on the most successful synthesis methods that are able to produce ZnO thin films with both framework and textural porosities. Moreover, we discuss the related applications, mainly focused on photocatalytic degradation of dyes, gas sensor fabrication and photoanodes for dye-sensitized solar cells.

  11. Oxidation behavior of TD-NiCr in a dynamic high temperature environment

    Science.gov (United States)

    Tenney, D. R.; Young, C. T.; Herring, H. W.

    1974-01-01

    The oxidation behavior of TD-NiCr has been studied in static and high-speed flowing air environments at 1100 and 1200 C. It has been found that the stable oxide morphologies formed on the specimens exposed to the static and dynamic environments were markedly different. The faceted crystal morphology characteristic of static oxidation was found to be unstable under high-temperature, high-speed flow conditions and was quickly replaced by a porous NiO 'mushroom' type structure. Also, it was found that the rate of formation of CrO3 from Cr2O3 was greatly enhanced by high gas velocity conditions. The stability of Cr2-O3 was found to be greatly improved by the presence of an outer NiO layer, even though the NiO layer was very porous. An oxidation model is proposed to explain the observed microstructures and overall oxidation behavior of TD-NiCr alloys.

  12. Contact resistance and stability study for Au, Ti, Hf and Ni contacts on thin-film Mg2Si

    KAUST Repository

    Zhang, Bo; Zheng, Tao; Wang, Qingxiao; Zhu, Yihan; Alshareef, Husam N.; Kim, Moon J.; Gnade, Bruce E.

    2016-01-01

    We present a detailed study of post-deposition annealing effects on contact resistance of Au, Ti, Hf and Ni electrodes on Mg2Si thin films. Thin-film Mg2Si and metal contacts were deposited using magnetron sputtering. Various post

  13. Amorphous NiFe-OH/NiFeP Electrocatalyst Fabricated at Low Temperature for Water Oxidation Applications

    KAUST Repository

    Liang, Hanfeng

    2017-04-11

    Water splitting driven by electricity or sunlight is one of the most promising ways to address the global terawatt energy needs of future societies; however, its large-scale application is limited by the sluggish kinetics of the oxygen evolution reaction (OER). NiFe-based compounds, mainly oxides and hydroxides, are well-known OER catalysts and have been intensively studied; however, the utilization of the synergistic effect between two different NiFe-based materials to further boost the OER performance has not been achieved to date. Here, we report the rapid conversion of NiFe double hydroxide into metallic NiFeP using PH3 plasma treatment and further construction of amorphous NiFe hydroxide/NiFeP/Ni foam as efficient and stable oxygen-evolving anodes. The strong electronic interactions between NiFe hydroxide and NiFeP significantly lower the adsorption energy of H2O on the hybrid and thus lead to enhanced OER performance. As a result, the hybrid catalyst can deliver a geometrical current density of 300 mA cm–2 at an extremely low overpotential (258 mV, after ohmic-drop correction), along with a small Tafel slope of 39 mV decade–1 and outstanding long-term durability in alkaline media.

  14. Oxidation behavior of HVOF sprayed Ni-5Al coatings deposited on Ni- and Fe-based superalloys under cyclic condition

    International Nuclear Information System (INIS)

    Mahesh, R.A.; Jayaganthan, R.; Prakash, S.

    2008-01-01

    Ni-5Al coating was obtained on three superalloy substrates viz. Superni 76, Superni 750 and Superfer 800 using high velocity oxy-fuel (HVOF) spray process. Oxidation studies were carried out on both bare and coated superalloy substrates in air at 900 deg. C for 100 cycles. The weight change was measured at the end of each cycle and observed that the weight gain was high in Superni 750 alloy when compared to Superni 76 and Superfer 800. A nearly parabolic oxidation behavior was observed for Ni-5Al coated Superni 750 and Superfer 800 alloys but a Ni-5Al coated Superni 76 substrate showed a slight deviation. The scale was analysed using X-ray diffraction (XRD), scanning electron microscopy (SEM) and energy dispersive X-ray analysis (EDAX) and electron probe microanalysis (EPMA). The coating increased the oxidation resistance for all the alloy substrates at 900 deg. C. Among the three-coated superalloys, Superfer 800 substrate has shown the best resistance to oxidation. The protective nature of the Ni-5Al coated superalloys was due to the formation of protective oxide scales such as NiO, Al 2 O 3 and Cr 2 O 3

  15. Thin and flexible Ni-P based current collectors developed by electroless deposition for energy storage devices

    International Nuclear Information System (INIS)

    Wu, Haoran; Susanto, Amelia; Lian, Keryn

    2017-01-01

    Highlights: • A PET metallized by electroless nickel was developed as flexible current collector. • The Ni-PET current collector showed good conductivity and chemical stability. • The flexible nanocarbon electrodes with Ni-PET exhibited capacitive behavior. • The Ni-PET enabled electrodes performed nicely in liquid and solid supercapacitors. - Abstract: A PET film metalized by electroless nickel deposition was demonstrated as thin and flexible current collector for energy storage devices. The resultant nickel-on-PET film (Ni-PET) can be used both as current collector for electrochemical capacitors and as electrode for thin film batteries. The composition of Ni-PET was characterized by EDX and XPS. The electrochemical performance of the Ni-PET current collector was similar to Ni foil but with less hydrogen evolution at low potential. The Ni-PET film exhibited better flexibility than a metallic Ni foil. Carbon nanotubes were coated on a Ni-PET substrate to form an electrochemical capacitor electrode which exhibited high chemical stability in both liquid and solid electrolytes, showing strong promise for solid energy storage devices.

  16. Thin and flexible Ni-P based current collectors developed by electroless deposition for energy storage devices

    Energy Technology Data Exchange (ETDEWEB)

    Wu, Haoran, E-mail: haoran.wu@mail.utoronto.ca; Susanto, Amelia; Lian, Keryn

    2017-02-01

    Highlights: • A PET metallized by electroless nickel was developed as flexible current collector. • The Ni-PET current collector showed good conductivity and chemical stability. • The flexible nanocarbon electrodes with Ni-PET exhibited capacitive behavior. • The Ni-PET enabled electrodes performed nicely in liquid and solid supercapacitors. - Abstract: A PET film metalized by electroless nickel deposition was demonstrated as thin and flexible current collector for energy storage devices. The resultant nickel-on-PET film (Ni-PET) can be used both as current collector for electrochemical capacitors and as electrode for thin film batteries. The composition of Ni-PET was characterized by EDX and XPS. The electrochemical performance of the Ni-PET current collector was similar to Ni foil but with less hydrogen evolution at low potential. The Ni-PET film exhibited better flexibility than a metallic Ni foil. Carbon nanotubes were coated on a Ni-PET substrate to form an electrochemical capacitor electrode which exhibited high chemical stability in both liquid and solid electrolytes, showing strong promise for solid energy storage devices.

  17. Effect of Ni content on the morphological evolution of Ni-YSZ solid oxide fuel cell electrodes

    Science.gov (United States)

    Chen-Wiegart, Yu-chen Karen; Kennouche, David; Scott Cronin, J.; Barnett, Scott A.; Wang, Jun

    2016-02-01

    The coarsening of Ni in Ni-yttria-stabilized zirconia (YSZ) anodes is a potential cause of long term solid oxide fuel cells (SOFC) performance degradation. The specifics of the Ni-YSZ structure—including Ni/YSZ ratio, porosity, and particle size distributions—are normally selected to minimize anode polarization resistance, but they also impact long-term stability. A better understanding of how these factors influence long-term stability is important for designing more durable anodes. The effect of structural details, e.g., Ni-YSZ ratio, on Ni coarsening has not been quantified. Furthermore, prior measurements have been done by comparing evolved structures with control samples, such that sample-to-sample variations introduce errors. Here, we report a four dimensional (three spatial dimensions and time) study of Ni coarsening in Ni-YSZ anode functional layers with different Ni/YSZ ratios, using synchrotron x-ray nano-tomography. The continuous structural evolution was observed and analyzed at sub-100 nm resolution. It is shown quantitatively that increasing the Ni/YSZ ratio increases the Ni coarsening rate. This is due to both increased pore volume and a decrease in the YSZ volume fraction, such that there is more free volume and a less obtrusive YSZ network, both of which allow greater Ni coarsening. The results are shown to be in good agreement with a power-law coarsening model. The finding is critical for informing the design of SOFC electrode microstructures that limit coarsening and performance degradation.

  18. Effect of tungsten (W) on structural and magnetic properties of electroplated NiFe thin films for MEMS applications

    Science.gov (United States)

    Kannan, R.; Devaki, P.; Premkumar, P. S.; Selvambikai, M.

    2018-04-01

    Electrodeposition of nanocrystalline NiFe and NiFeW thin films were carried out from ammonium citrate bath at a constant current density and controlled pH of 8 by varying the bath temperature from 40 °C to 70 °C. The surface morphology and chemical composition of the electrodeposited NiFe and NiFeW soft magnetic thin films were studied by using SEM and EDAX. The SEM micrographs of the films coated at higher electrodeposited bath temperature have no micro cracks and also the films have more uniform surface morphology. The existence of crystalline nature of the coated films were analysed by XRD. The presence of predominant peaks in x-ray diffraction pattern (compared with JCPDS data) reveal that the average crystalline size was in the order of few tens of nano meters. The magnetic properties such as coercivity, saturation magnetization and magnetic flux density have been calculated from vibrating sample magnetometer analysis. The VSM result shows that the NiFeW thin film synthesised at 70 °C exhibit the lower coercivity with higher saturation magnetization. The hardness and adhesion of the electroplated films have been investigated. Reasons for variation in magnetic properties and structural characteristics are also discussed. The electroplated NiFe and NiFeW thin films can be used for Micro Electro Mechanical System (MEMS) applications due to their excellent soft magnetic behaviour.

  19. Nanocrystalline Pd:NiFe{sub 2}O{sub 4} thin films: A selective ethanol gas sensor

    Energy Technology Data Exchange (ETDEWEB)

    Rao, Pratibha; Godbole, R.V.; Bhagwat, Sunita, E-mail: smb.agc@gmail.com

    2016-10-15

    In this work, Pd:NiFe{sub 2}O{sub 4} thin films were investigated for the detection of reducing gases. These films were fabricated using spray pyrolysis technique and characterized using X-ray diffraction (XRD) to confirm the crystal structure. The surface morphology was studied using scanning electron microscopy (SEM). Magnetization measurements were carried out using SQUID VSM, which shows ferrimagnetic behavior of the samples. These thin film sensors were tested against methanol, ethanol, hydrogen sulfide and liquid petroleum gas, where they were found to be more selective to ethanol. The fabricated thin film sensors exhibited linear response signal for all the gases with concentrations up to 5 w/o Pd. Reduction in optimum operating temperature and enhancement in response was also observed. Pd:NiFe{sub 2}O{sub 4} thin films exhibited faster response and recovery characteristic. These sensors have potential for industrial applications because of their long-term stability, low power requirement and low production cost. - Highlights: • Ethanol gas sensors based on Pd:NiFe{sub 2}O{sub 4} nanoparticle thin film were fabricated. • Pd incorporation in NiFe{sub 2}O{sub 4} matrix inhibits grain growth. • The sensors were more selective to ethanol gas. • Sensors exhibited fast response and recovery when doped with palladium. • Pd:NiFe{sub 2}O{sub 4} thin film sensor displays excellent long–term stability.

  20. Fiscal 1999 achievement report on the venture business assisting type regional consortium - Minor business creation base type. Development of hypersensitive photocatalyst using oxide semiconductor thin film having nanostructure; 1999 nendo chiiki consortium kenkyu kaihatsu jigyo seika hokokusho. Nano bisai kozo wo yusuru sankabutsu handotai usumaku ni yoru chokokando hikari shokubai no kaihatsu

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    2001-03-01

    The thin film structure of photocatalytic titanium oxide, capable of efficiently decomposing hazardous pollutants or the like, is refined to have a nanometric scale structure for a larger specific surface for the development of a photocatalytic thin film or powder film and for the development of decomposition capable air cleaner using a thus developed photocatalytic film. Described in this report are the results of a study conducted to elucidate the fabrication conditions, nanostructures, and photocatalytic features of titanium oxide thin films formed by spray thermolysis, RF (radio frequency) sputtering, reactive sputtering, and sol-gel process, a study of hazardous pollutant decomposing capability and nanostructure, the establishment of fabrication technologies, and the construction of a prototype air cleaner with the results of the said studies applied thereto. Among the various fabrication methods, the technology involving a hypersensitive thin film photocatalyst was established by combining the reactive sputtering method and the sol-gel method. It was found that the formation of prismatic crystals in the sol-gel method was the most important in achieving high performance in the hypersensitive thin film photocatalyst. (NEDO)

  1. Studies on resistive switching times in NiO thin films grown by pulsed laser deposition

    International Nuclear Information System (INIS)

    Misra, P; Sahu, V K; Ajimsha, R S; Das, A K; Singh, B

    2017-01-01

    The resistive switching dynamics of NiO thin films in Au/NiO/Pt device configuration have been investigated to measure the switching times of set and reset events and their dependence on compliance current and switching voltages. The set switching time was found to be ∼10 ns at the set voltage of ∼1.8 V, while reset switching time was much longer ∼150 µ s at reset voltage of 0.8 V. With increasing compliance current from 5 to 75 mA during set process, although the resistance contrast of two states improved due to the decrease in the resistance of the low resistance state, the reset switching time increased substantially up to ∼3 ms while set time remained nearly unchanged. The fast reset switching time of ∼27 ns, comparable to that of set switching time, was achieved by applying a higher reset voltage of ∼1.2 V. The observed dependence of reset time on compliance current and reset voltage in NiO thin films was explained in light of the conducting filamentary model in which reset process is of thermal nature and involves dissolution of conducting filaments as a consequence of Joule heating generated by the reset current. (paper)

  2. Thin and Flexible Fe-Si-B/Ni-Cu-P Metallic Glass Multilayer Composites for Efficient Electromagnetic Interference Shielding.

    Science.gov (United States)

    Zhang, Jijun; Li, Jiawei; Tan, Guoguo; Hu, Renchao; Wang, Junqiang; Chang, Chuntao; Wang, Xinmin

    2017-12-06

    Thin and flexible materials that can provide efficient electromagnetic interference (EMI) shielding are urgently needed, especially if they can be easily processed and withstand harsh environments. Herein, layer-structured Fe-Si-B/Ni-Cu-P metallic glass composites have been developed by simple electroless plating Ni-Cu-P coating on commercial Fe-Si-B metallic glasses. The 0.1 mm-thick composite shows EMI shielding effectiveness of 40 dB over the X-band frequency range, which is higher than those of traditional metals, metal oxides, and their polymer composites of larger thickness. Most of the applied electromagnetic waves are proved to be absorbed rather than bounced back. This performance originates from the combination of a superior soft magnetic property, excellent electrical conductivity, and multiple internal reflections from multilayer composites. In addition, the flexible composites also exhibit good corrosion resistance, high thermal stability, and excellent tensile strength, making them suitable for EMI shielding in harsh chemical or thermal environments.

  3. Hydrogen oxidation mechanisms on Ni/yttria stabilized zirconia anodes: Separation of reaction pathways by geometry variation of pattern electrodes

    Science.gov (United States)

    Doppler, M. C.; Fleig, J.; Bram, M.; Opitz, A. K.

    2018-03-01

    Nickel/yttria stabilized zirconia (YSZ) electrodes are affecting the overall performance of solid oxide fuel cells (SOFCs) in general and strongly contribute to the cell resistance in case of novel metal supported SOFCs in particular. The electrochemical fuel conversion mechanisms in these electrodes are, however, still only partly understood. In this study, micro-structured Ni thin film electrodes on YSZ with 15 different geometries are utilized to investigate reaction pathways for the hydrogen electro-oxidation at Ni/YSZ anodes. From electrodes with constant area but varying triple phase boundary (TPB) length a contribution to the electro-catalytic activity is found that does not depend on the TPB length. This additional activity could clearly be attributed to a yet unknown reaction pathway scaling with the electrode area. It is shown that this area related pathway has significantly different electrochemical behavior compared to the TPB pathway regarding its thermal activation, sulfur poisoning behavior, and H2/H2O partial pressure dependence. Moreover, possible reaction mechanisms of this reaction pathway are discussed, identifying either a pathway based on hydrogen diffusion through Ni with water release at the TPB or a path with oxygen diffusion through Ni to be a very likely explanation for the experimental results.

  4. Hybrid NiCoOx adjacent to Pd nanoparticles as a synergistic electrocatalyst for ethanol oxidation

    Science.gov (United States)

    Wang, Wei; Yang, Yan; Liu, Yanqin; Zhang, Zhe; Dong, Wenkui; Lei, Ziqiang

    2015-01-01

    To improve the electrocatalytic activity of Pd for ethanol oxidation, hybrid NiCoOx adjacent to Pd catalyst (Pd-NiCoOx/C) is successfully synthesized. Physical characterization shows NiCoOx is closely adjacent to Pd nanoparticles in Pd-NiCoOx/C catalyst, which leads to Strong Metal-Support Interactions (SMSI) between the NiCoOx and Pd nanoparticles, in favor of the electrocatalytic properties. The Pd-NiCoOx/C catalyst is estimated to own larger electrochemically active surface area than Pd/C and Pd-NiO/C catalysts. Moreover, compared to Pd/C catalyst, the onset potential of Pd-NiCoOx/C catalyst is negative 40 mV for ethanol oxidation. Noticeably, the current density of Pd-NiCoOx/C catalyst is 2.05 and 1.43 times higher contrasted to Pd/C and Pd-NiO/C catalysts accordingly. Importantly, the Pd-NiCoOx/C catalyst exhibits better stability during ethanol oxidation, which is a promising electrocatalyst for application in direct alkaline alcohol fuel cells.

  5. Nanocomposite oxide thin films grown by pulsed energy beam deposition

    International Nuclear Information System (INIS)

    Nistor, M.; Petitmangin, A.; Hebert, C.; Seiler, W.

    2011-01-01

    Highly non-stoichiometric indium tin oxide (ITO) thin films were grown by pulsed energy beam deposition (pulsed laser deposition-PLD and pulsed electron beam deposition-PED) under low oxygen pressure. The analysis of the structure and electrical transport properties showed that ITO films with a large oxygen deficiency (more than 20%) are nanocomposite films with metallic (In, Sn) clusters embedded in a stoichiometric and crystalline oxide matrix. The presence of the metallic clusters induces specific transport properties, i.e. a metallic conductivity via percolation with a superconducting transition at low temperature (about 6 K) and the melting and freezing of the In-Sn clusters in the room temperature to 450 K range evidenced by large changes in resistivity and a hysteresis cycle. By controlling the oxygen deficiency and temperature during the growth, the transport and optical properties of the nanocomposite oxide films could be tuned from metallic-like to insulating and from transparent to absorbing films.

  6. Ion beam analysis of PECVD silicon oxide thin films

    International Nuclear Information System (INIS)

    Fernandez-Lima, F.; Rodriguez, J.A.; Pedrero, E.; Fonseca Filho, H.D.; Llovera, A.; Riera, M.; Dominguez, C.; Behar, M.; Zawislak, F.C.

    2006-01-01

    A study of ion beam analysis techniques of plasma enhanced chemical vapor deposited (PECVD) silicon oxide thin films (1 μm thick) obtained from silane (SiH 4 ) and nitrous oxide (N 2 O) is reported. The film, elemental composition and surface morphology were determined as function of the reactant gas flow ratio, R = [N 2 O]/[SiH 4 ] in the 22-110 range using the Rutherford backscattering spectrometry, nuclear reaction analysis and atomic force microscopy techniques. The density of the films was determined by combining the RBS and thickness measurements. All the experiments were done at a deposition temperature of 300 deg. C. In all the cases almost stoichiometric oxides were obtained being the impurity content function of R. It was also observed that physical properties such as density, surface roughness and shape factor increase with R in the studied interval

  7. Structural, optical and electrical characteristics of nickel oxide thin films synthesised through chemical processing method

    Science.gov (United States)

    Akinkuade, Shadrach; Mwankemwa, Benanrd; Nel, Jacqueline; Meyer, Walter

    2018-04-01

    A simple and cheap chemical deposition method was used to produce a nickel oxide (NiO) thin film on glass substrates from a solution that contained Ni2+ and monoethanolamine. Thermal treatment of the film at temperatures above 350 °C for 1 h caused decomposition of the nickel hydroxide into nickel oxide. Structural, optical and electrical properties of the film were studied using X-ray diffraction (XRD), spectrophotometry, current-voltage measurements and scanning electron microscopy (SEM). The film was found to be polycrystalline with interplanar spacing of 0.241 nm, 0.208 nm and 0.148 nm for (111), (200) and (220) planes respectively, the lattice constant a was found to be 0.417 nm. The film had a porous surface morphology, formed from a network of nanowalls of average thickness of 66.67 nm and 52.00 nm for as-deposited and annealed films respectively. Transmittance of visible light by the as-deposited film was higher and the absorption edge of the film blue-shifted after annealing. The optical band gap of the annealed film was 3.8 eV. Electrical resistivity of the film was 378 Ωm.

  8. Swift heavy ion induced de wetting of metal oxide thin films on silicon

    International Nuclear Information System (INIS)

    Bolse, T.; Paulus, H.; Bolse, W.

    2006-01-01

    We have observed that thin oxide coatings (NiO, Fe 2 O 3 ) tend to dewet their Si substrate when being bombarded with swift heavy ions (350-600 MeV Au ions) even though the irradiation was carried out about 80 K and hence, the films never reached their melting point. Scanning electron and atomic force microscopy reveal a surprising similarity of the dewetting morphologies with those observed for molten polymer films on Si, which have recently been reported by others [S. Herminghaus, K. Jakobs, K. Mecke, J. Bischof, A. Fery, M. Ibn-Elhaj, S. Schlagowsky, Science 282 (1998) 916; R. Seemann, S. Herminghaus, K. Jacobs, J. Phys.: Condens. Matter 13 (2001) 4925]. Like in that cases also here heterogeneous and homogeneous hole nucleation could be identified. Heterogeneous nucleation is less pronounced in Fe 2 O 3 /Si than in NiO/Si. The occurrence of spinodal-like dewetting cannot be detected unambiguously. The dewetting kinetics were determined by means of Rutherford backscattering spectroscopy and found to slightly differ for the two compounds. The dewetting kinetics as well as the final dewetting pattern strongly depend on the initial film thicknesses. No dewetting occurs for film thicknesses above about 150 nm, while for very small thicknesses below about 40 nm the film decays into nm-sized spherical droplets. At intermediate film thicknesses percolated networks of small oxide bridges are formed

  9. The effect of solution pH on the electrochemical performance of nanocrystalline metal ferrites MFe2O4 (M=Cu, Zn, and Ni) thin films

    Science.gov (United States)

    Elsayed, E. M.; Rashad, M. M.; Khalil, H. F. Y.; Ibrahim, I. A.; Hussein, M. R.; El-Sabbah, M. M. B.

    2016-04-01

    Nanocrystalline metal ferrite MFe2O4 (M=Cu, Zn, and Ni) thin films have been synthesized via electrodeposition-anodization process. Electrodeposited (M)Fe2 alloys were obtained from aqueous sulfate bath. The formed alloys were electrochemically oxidized (anodized) in aqueous (1 M KOH) solution, at room temperature, to the corresponding hydroxides. The parameters controlling the current efficiency of the electrodeposition of (M)Fe2 alloys such as the bath composition and the current density were studied and optimized. The anodized (M)Fe2 alloy films were annealed in air at 400 °C for 2 h. The results revealed the formation of three ferrite thin films were formed. The crystallite sizes of the produced films were in the range between 45 and 60 nm. The microstructure of the formed film was ferrite type dependent. The corrosion behavior of ferrite thin films in different pH solutions was investigated using open circuit potential (OCP) and potentiodynamic polarization measurements. The open circuit potential indicates that the initial potential E im of ZnFe2O4 thin films remained constant for a short time, then sharply increased in the less negative direction in acidic and alkaline medium compared with Ni and Cu ferrite films. The values of the corrosion current density I corr were higher for the ZnFe2O4 films at pH values of 1 and 12 compared with that of NiFe2O4 and CuFe2O4 which were higher only at pH value 1. The corrosion rate was very low for the three ferrite films when immersion in the neutral medium. The surface morphology recommended that Ni and Cu ferrite films were safely used in neutral and alkaline medium, whereas Zn ferrite film was only used in neutral atmospheres.

  10. Shape memory characteristics of sputter-deposited Ti-Ni thin films

    International Nuclear Information System (INIS)

    Miyazaki, Shuichi; Ishida, Akira.

    1994-01-01

    Ti-Ni shape memory alloy thin films were deposited using an RF magnetron sputtering apparatus. The as-sputtered films were heat-treated in order to crystallize and memorize. After the heat treatment, the shape memory characteristics have been investigated using DSC and thermomechanical tests. Upon cooling the thin films, the solution-treated films showed a single peak in the DSC curve indicating a single stage transformation occurring from B2 to the martensitic phase, while the age-treated films showed double peaks indicating a two-stage transformation, i.e., from B2 to the R-phase, then to the martensitic phase. A perfect shape memory effect was achieved in these sputter-deposited Ti-Ni thin films in association both with the R-phase and martensitic transformations. Transformation temperatures increased linearly with increasing applied stress. The transformation strain also increased with increasing stress. The shape memory characteristics were strongly affected by heat-treatment conditions. (author)

  11. LaSrMnO{sub 3} thin films on YSZ/YSZ - NiO by the spin coating method: synthesis and microstructural characterization

    Energy Technology Data Exchange (ETDEWEB)

    Garcia, Laurenia Martins Pereira; Souza, Graziele Lopes de [Universidade Federal do Rio Grande do Norte (NUPEG/UFRN), Natal, RN (Brazil). Nucleo de Pesquisa em Petroleo e Gas], Email: lauengmat@hotmail.com; Macedo, Daniel Araujo de; Cela, Beatriz; Paskocimas, Carlos Alberto; Nascimento, Rubens Maribondo do [Universidade Federal do Rio Grande do Norte (PPGCEM/UFRN), Natal, RN (Brazil). Programa de Pos Graduacao em Ciencia e Engenharia de Materiais; Cesario, Moises Romolos [Universidade Federal do Rio Grande do Norte (PPGQ/UFRN), Natal, RN (Brazil). Programa de Pos Graduacao em Quimica

    2010-07-01

    Fuel cells are devices which work by electrochemical mechanism directly converting the chemical energy, by fuel the oxidizing, in electric energy. The Solid Oxide Fuel Cell - SOFC consist an anode, an electrolyte and one cathode made with ceramic materials. The most widely known functional materials used in SOFC are Yttria-stabilized zirconia electrolyte (YSZ), composite anode of YSZ-Ni O and strontium-doped lanthanum manganite cathode (La{sub 1-x}Sr{sub x}MnO{sub 3} - LGSM). In this work the thin films of cathode LSM were deposited by spin coating in a half cell YSZ/YSZ - Ni O. The polymeric resin of 22% strontium-doped lanthanum manganite (LSM 22) was attained by the polymeric precursor method. This resin was directly used for the deposition process. The deposition of 2 or 4 layers occurred by spin coating method with the following conditions: 500 rpm during 15 s and 300 rpm during 40 s. Each layer was thermally treated at 500 deg C for 2 h and heating rate equal to 1 deg C/min. The multi layers were sintered at 1000 deg C for 2 h, heating rate of 3 deg C/min and characterized by X-ray diffraction (XRD) and scanning electronic microscopy (SEM). The LSM 22 thin films presented microstructure with thin particles and thickness of 1 {mu}m. The surface cracks' quantity and size reduction tendency was observed with the increase of the layers deposition number. (author)

  12. Synthesis and characterization of n-type NiO:Al thin films for fabrication of p-n NiO homojunctions

    Science.gov (United States)

    Sun, Hui; Liao, Ming-Han; Chen, Sheng-Chi; Li, Zhi-Yue; Lin, Po-Chun; Song, Shu-Mei

    2018-03-01

    n-type NiO:Al thin films were deposited by RF magnetron sputtering. Their optoelectronic properties versus Al target power was investigated. The results show that with increasing Al target power, the conduction type of NiO films changes from p-type to n-type. The variation of the film’s electrical and optical properties depends on Al amount in the film. When Al target power is relatively low, Al3+ cations tend to enter nickel vacancy sites, which makes the lattice structure of NiO more complete. This improves the carrier mobility and film’s transmittance. However, when Al target power exceeds 40 W, Al atoms begin to enter into interstitial sites and form an Al cluster in the NiO film. This behavior is beneficial for improving the film’s n-type conductivity but degrades the film’s transmittance. Finally, Al/(p-type NiO)/(n-type NiO:Al)/ITO homojunctions were fabricated. Their performance was compared with Al/(p-type NiO)/ITO heterojunctions without an n-type NiO layer. Thanks to the better interface quality between the two NiO layers, the homojunctions present better performance.

  13. Electrophoretic deposition of thin film zirconia electrolyte on non-conducting NiO-YSZ substrate

    International Nuclear Information System (INIS)

    Das, Debasish; Basu, Rajendra N.

    2014-01-01

    Eight (8) mol% yttria stabilized zirconia (YSZ), an electrolyte material for solid oxide fuel cell (SOFC), has been deposited onto porous non-conducting NiO-YSZ substrate using electrophoretic deposition technique (EPD) from a stable non-aqueous suspension of YSZ. Normally, EPD cannot be performed on a non-conducting substrate, but, in this present study, YSZ particulate film has been successfully deposited on a non-conducting NiO-YSZ substrate following two different EPD approaches:(a) using a conducting metallic plate on the reverse side of the porous NiO-YSZ anode substrate and (b) using a conducting polymer coated NiO-YSZ substrate. The deposited films are then formed dense coatings of 5-15 μm after sintering at 1400℃ for 6 h in air. Surface and cross-sectional morphologies of green and sintered films deposited by different EPD approaches are investigated using SEM. La 0.65 Sr 0.3 MnO 3 (LSM), a cathode for SOFC, is then screen-printed onto the electrolyte layer of such sintered half cells (anode+electrolyte) prepared by both the above approaches to construct SOFC single cells. A maximum output power density of 0.37 W.cm -2 is obtained using single cells prepared by conducting metallic plate assisted EPD compared to that of 0.73 W.cm -2 for polymer coated at 800℃ using H 2 as fuel and O 2 as oxidant. (author)

  14. Temperature dependent optical characterization of Ni-TiO2 thin films as potential photocatalytic material

    Science.gov (United States)

    De, Rajnarayan; Haque, S. Maidul; Tripathi, S.; Rao, K. Divakar; Singh, Ranveer; Som, T.; Sahoo, N. K.

    2017-09-01

    Along with other transition metal doped titanium dioxide materials, Ni-TiO2 is considered to be one of the most efficient materials for catalytic applications due to its suitable energy band positions in the electronic structure. The present manuscript explores the possibility of improving the photocatalytic activity of RF magnetron sputtered Ni-TiO2 films upon heat treatment. Optical, structural and morphological and photocatalytic properties of the films have been investigated in detail for as deposited and heat treated samples. Evolution of refractive index (RI) and total film thickness as estimated from spectroscopic ellipsometry characterization are found to be in agreement with the trend in density and total film thickness estimated from grazing incidence X-ray reflectivity measurement. Interestingly, the evolution of these macroscopic properties were found to be correlated with the corresponding microstructural modifications realized in terms of anatase to rutile phase transformation and appearance of a secondary phase namely NiTiO3 at high temperature. Corresponding morphological properties of the films were also found to be temperature dependent which leads to modifications in the grain structure. An appreciable reduction of optical band gap from 2.9 to 2.5 eV of Ni-TiO2 thin films was also observed as a result of post deposition heat treatment. Testing of photocatalytic activity of the films performed under UV illumination demonstrates heat treatment under atmospheric ambience to be an effective means to enhance the photocatalytic efficiency of transition metal doped titania samples.

  15. Ag/PEPC/NiPc/ZnO/Ag thin film capacitive and resistive humidity sensors

    International Nuclear Information System (INIS)

    Karimov, Kh. S.; Saleem, M.; Murtaza, Imran; Farooq, M.; Cheong, Kuan Yew; Noor, Ahmad Fauzi Mohd

    2010-01-01

    A thin film of blended poly-N-epoxypropylcarbazole (PEPC) (25 wt.%), nickel phthalocyanine (NiPc) (50 wt.%) and ZnO nano-powder (25 wt.%) in benzene (5 wt.%) was spin-coated on a glass substrate with silver electrodes to produce a surface-type Ag/PEPC/NiPc/ZnO/Ag capacitive and resistive sensor. Sensors with two different PEPC/NiPc/ZnO film thicknesses (330 and 400 nm) were fabricated and compared. The effects of humidity on capacitance and resistance of the Ag/PEPC/NiPc/ZnO/Ag sensors were investigated at two frequencies of the applied voltage: 120 Hz and 1 kHz. It was observed that at 120 Hz under humidity of up to 95% RH the capacitance of the sensors increased by 540 times and resistance decreased by 450 times with respect to humidity conditions of 50% RH. It was found that the sensor with a thinner semiconducting film (330 nm) was more sensitive than the sensor with a thicker film (400 nm). The sensitivity was improved when the sensor was used at a lower frequency as compared with a high frequency. It is assumed that the humidity response of the sensors is associated with absorption of water vapors and doping of water molecules in the semiconductor blend layer. This had been proven by simulation of the capacitance-humidity relationship. (semiconductor devices)

  16. Effect of Ni content on the morphological evolution of Ni-YSZ solid oxide fuel cell electrodes

    Energy Technology Data Exchange (ETDEWEB)

    Chen-Wiegart, Yu-chen Karen; Kennouche, David; Scott Cronin, J.; Barnett, Scott A.; Wang, Jun

    2016-02-22

    The coarsening of Ni in Ni–yttria-stabilized zirconia (YSZ) anodes is a potential cause of long term solid oxide fuel cells (SOFC) performance degradation. The specifics of the Ni-YSZ structure—including Ni/YSZ ratio, porosity, and particle size distributions—are normally selected to minimize anode polarization resistance, but they also impact long-term stability. A better understanding of how these factors influence long-term stability is important for designing more durable anodes. The effect of structural details, e.g., Ni-YSZ ratio, on Ni coarsening has not been quantified. Furthermore, prior measurements have been done by comparing evolved structures with control samples, such that sample-to-sample variations introduce errors. Here, we report a four dimensional (three spatial dimensions and time) study of Ni coarsening in Ni-YSZ anode functional layers with different Ni/YSZ ratios, using synchrotron x-ray nano-tomography. The continuous structural evolution was observed and analyzed at sub-100 nm resolution. It is shown quantitatively that increasing the Ni/YSZ ratio increases the Ni coarsening rate. This is due to both increased pore volume and a decrease in the YSZ volume fraction, such that there is more free volume and a less obtrusive YSZ network, both of which allow greater Ni coarsening. The results are shown to be in good agreement with a power-law coarsening model. The finding is critical for informing the design of SOFC electrode microstructures that limit coarsening and performance degradation.

  17. Properties of Spray Pyrolysied Copper Oxide Thin Films

    Directory of Open Access Journals (Sweden)

    S. S. Roy

    2017-02-01

    Full Text Available Copper oxide (CuO thin films were deposited on well cleaned glass substrates by spray pyrolysis technique (SPT from cupric acetate (Cu(CH3COO2.H2O precursor solutions of 0.05 – 0.15 M molar concentrations (MC at a substrate temperature of 350 °C and at an air pressure of 1 bar. Effect of varying MC on the surface morphology, structural optical and electrical properties of CuO thin films were investigated. XRD patterns of the prepared films revealed the formation of CuO thin films having monoclinic structure with the main CuO (111 orientation and crystalline size ranging from 8.02 to 9.05 nm was observed. The optical transmission of the film was found to decrease with the increase of MC. The optical band gap of the thin films for 0.10 M was fond to be 1.60 eV. The room temperature electrical resistivity varies from 31 and 24 ohm.cm for the films grown with MC of 0.05 and 0.10 M respectively. The change in resistivity of the films was studied with respect to the change in temperature was shown that semiconductor nature is present. This information is expected to underlie the successful development of CuO films for solar windows and other semi-conductor applications including gas sensors.

  18. Solute transport and the prediction of breakaway oxidation in gamma + beta Ni-Cr-Al alloys

    Science.gov (United States)

    Nesbitt, J. A.; Heckel, R. W.

    1984-01-01

    The Al transport and the condition leading to breakaway oxidation during the cyclic oxidation of gamma + beta NiCrAl alloys have been studied. The Al concentration/distance profiles were measured after various cyclic oxidation exposures at 1200 C. It was observed that cyclic oxidation results in a decreasing Al concentration at the oxide/metal interface, maintaining a constant flux of Al to the Al2O3 scale. It was also observed that breakaway oxidation occurs when the Al concentration at the oxide/metal interface approaches zero. A numerical model was developed to simulate the diffusional transport of Al and to predict breakaway oxidation in gamma + beta NiCrAl alloys undergoing cyclic oxidation. In a comparison of two alloys with similar oxide spalling characteristics, the numerical model was shown to predict correctly the onset of breakaway oxidation in the higher Al-content alloy.

  19. Diffusion and segregation of substrate copper in electrodeposited Ni-Fe thin films

    International Nuclear Information System (INIS)

    Ahadian, M.M.; Iraji zad, A.; Nouri, E.; Ranjbar, M.; Dolati, A.

    2007-01-01

    The Cu surface segregation is investigated in the electrodeposited Ni-Fe layers using X-ray photoelectron spectroscopy (XPS), Auger electron spectroscopy (AES), secondary ion mass spectroscopy (SIMS) and atomic force microscopy (AFM). The results indicate that Cu segregation and accumulation take place in areated and deareated baths and the amount of segregated copper increases after air exposure. This phenomenon is explained by lower interfacial tension of the Cu in comparison with Ni and Fe. Our results reveal more surface segregation in the electrodeposit than vacuum reported results. This should be due to interface charging and higher surface diffusion in applied potential. The effect of interface charging on the interfacial tension is discussed based on Lippmann equation. Increasing of the Cu accumulation after air exposure is related to selective oxidation in alloys and higher tendency of Cu to surface oxidation

  20. Determination of diffusion coefficients in Au/Ni thin films by Auger electron spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Abdul-Lettif, Ahmed M. [Physics Department, College of Science, Babylon University, Hilla (Iraq)

    2004-07-01

    Interdiffusion in vacuum-deposited Au/Ni thin films at temperatures in the range 200-500 C has been investigated using the Auger depth profiling technique and X-ray diffraction analysis. A modified Wipple model was used to determine the diffusion coefficients of Ni in Au to be 5.3 x 10{sup -16} cm{sup 2}/s at 500 C, 4.0 x 10{sup -17} cm{sup 2}/s at 400 C, 2.5 x 10{sup -18} cm{sup 2}/s at 300 C, and 1.2 x 10{sup -19} cm{sup 2}/s at 200 C. An activation energy of 0.87 eV was calculated. The present diffusion data differ significantly from the corresponding values extracted by some other investigators and the reasons for this disagreement were discussed. (copyright 2004 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  1. Morphology evolution of thin Ni film on MgO(100) substrate

    International Nuclear Information System (INIS)

    Lin, C.; Xu, Y.H.; Naramoto, H.; Wei, P.; Kitazawa, S.; Narumi, K.

    2002-01-01

    Thin Ni films with various thicknesses were deposited onto the MgO(100) single crystal substrate at 400 deg. C. The morphology measured by atomic force microscope shows an apparent correlation with the thickness. The initial 10 A film is composed of small round Ni islands. In the 25 A film, pinholes with narrow size distribution occur, which show local periodic distribution in some regions when the thickness of the film reaches 75 A. The driving force for such a structure is attributed to the elastic strain energy. When the film is about 100 A thick, the pinholes begin to disappear, due to filling by the late-coming atoms and covering of upper islands. (author)

  2. Amorphous Hafnium-Indium-Zinc Oxide Semiconductor Thin Film Transistors

    Directory of Open Access Journals (Sweden)

    Sheng-Po Chang

    2012-01-01

    Full Text Available We reported on the performance and electrical properties of co-sputtering-processed amorphous hafnium-indium-zinc oxide (α-HfIZO thin film transistors (TFTs. Co-sputtering-processed α-HfIZO thin films have shown an amorphous phase in nature. We could modulate the In, Hf, and Zn components by changing the co-sputtering power. Additionally, the chemical composition of α-HfIZO had a significant effect on reliability, hysteresis, field-effect mobility (μFE, carrier concentration, and subthreshold swing (S of the device. Our results indicated that we could successfully and easily fabricate α-HfIZO TFTs with excellent performance by the co-sputtering process. Co-sputtering-processed α-HfIZO TFTs were fabricated with an on/off current ratio of ~106, higher mobility, and a subthreshold slope as steep as 0.55 V/dec.

  3. Ferroelectric thin films using oxides as raw materials

    Directory of Open Access Journals (Sweden)

    E.B. Araújo

    1999-01-01

    Full Text Available This work describes an alternative method for the preparation of ferroelectric thin films based on pre-calcination of oxides, to be used as precursor material for a solution preparation. In order to show the viability of the proposed method, PbZr0.53Ti0.47O3 and Bi4Ti3O12 thin films were prepared on fused quartz and Si substrates. The results were analyzed by X-ray Diffraction (XRD, Scanning Electron Microscopy (SEM, Infrared Spectroscopy (IR and Rutherford Backscattering Spectroscopy (RBS. The films obtained show good quality, homogeneity and the desired stoichiometry. The estimated thickness for one layer deposition was approximately 1000 Å and 1500 Å for Bi4Ti3O12 and PbZr0.53Ti0.47O3 films, respectively.

  4. Hafnium carbide formation in oxygen deficient hafnium oxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Rodenbücher, C. [Forschungszentrum Jülich GmbH, Peter Grünberg Institute (PGI-7), JARA-FIT, 52425 Jülich (Germany); Hildebrandt, E.; Sharath, S. U.; Kurian, J.; Komissinskiy, P.; Alff, L. [Technische Universität Darmstadt, Institute of Materials Science, 64287 Darmstadt (Germany); Szot, K. [Forschungszentrum Jülich GmbH, Peter Grünberg Institute (PGI-7), JARA-FIT, 52425 Jülich (Germany); University of Silesia, A. Chełkowski Institute of Physics, 40-007 Katowice (Poland); Breuer, U. [Forschungszentrum Jülich GmbH, Central Institute for Engineering, Electronics and Analytics (ZEA-3), 52425 Jülich (Germany); Waser, R. [Forschungszentrum Jülich GmbH, Peter Grünberg Institute (PGI-7), JARA-FIT, 52425 Jülich (Germany); RWTH Aachen, Institute of Electronic Materials (IWE 2), 52056 Aachen (Germany)

    2016-06-20

    On highly oxygen deficient thin films of hafnium oxide (hafnia, HfO{sub 2−x}) contaminated with adsorbates of carbon oxides, the formation of hafnium carbide (HfC{sub x}) at the surface during vacuum annealing at temperatures as low as 600 °C is reported. Using X-ray photoelectron spectroscopy the evolution of the HfC{sub x} surface layer related to a transformation from insulating into metallic state is monitored in situ. In contrast, for fully stoichiometric HfO{sub 2} thin films prepared and measured under identical conditions, the formation of HfC{sub x} was not detectable suggesting that the enhanced adsorption of carbon oxides on oxygen deficient films provides a carbon source for the carbide formation. This shows that a high concentration of oxygen vacancies in carbon contaminated hafnia lowers considerably the formation energy of hafnium carbide. Thus, the presence of a sufficient amount of residual carbon in resistive random access memory devices might lead to a similar carbide formation within the conducting filaments due to Joule heating.

  5. NiO-YSZ cermets supported low temperature solid oxide fuel cells

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Xinge; Robertson, Mark; Deces-Petit, Cyrille; Xie, Yongsong; Hui, Rob; Yick, Sing; Styles, Edward; Roller, Justin; Kesler, Olivera; Maric, Radenka; Ghosh, Dave [Institute for Fuel Cell Innovation, National Research Council Canada, 3250 East Mall, Vancouver, BC (Canada V6T 1W5)

    2006-10-20

    Solid oxide fuel cells with thin electrolyte of two types, Sm{sub 0.2}Ce{sub 0.8}O{sub 1.9} (SDC) (15{mu}m) single-layer and 8mol% Yttria stabilized zirconia (YSZ) (5{mu}m)+SDC (15{mu}m) bi-layer on NiO-YSZ cermet substrates were fabricated by screen printing and co-firing. A Sm{sub 0.5}Sr{sub 0.5}CoO{sub 3} cathode was printed, and in situ sintered during a cell performance test. The SDC single-layer electrolyte cell showed high electrochemical performance at low temperature, with a 1180mWcm{sup -2} peak power density at 650{sup o}C. The YSZ+SDC bi-layer electrolyte cell generated 340mWcm{sup -2} peak power density at 650{sup o}C, and showed good performance at 700-800{sup o}C, with an open circuit voltage close to theoretical value. Many high Zr-content micro-islands were found on the SDC electrolyte surface prior to the cathode preparation. The influence of co-firing temperature and thin film preparation methods on the Zr-islands' appearance was investigated. (author)

  6. Dry etching of LaNiO3 thin films using inductively coupled plasma

    International Nuclear Information System (INIS)

    Kim, Gwan-Ha; Kim, Dong-Pyo; Kim, Kyoung-Tae; Kim, Chang-Il; Lee, Cheol-In; Kim, Tae-Hyung

    2006-01-01

    The etching characteristics of LaNiO 3 (LNO) thin films and SiO 2 in Cl 2 /Ar plasma were investigated. LNO etch rates decreased with increasing Cl 2 fraction in Ar plasma and the working pressure. Langmuir probe measurement showed a noticeable influence of Cl 2 /Ar mixing ratio on electron temperature, electron density, and ion current density. The modeling of volume kinetics for charged particles and OES measurements for neutral atoms indicated monotonous changes of both densities and fluxes of active species such as chlorine atoms and positive ions. The LNO etch rate behavior may be explained by physical mechanisms

  7. Ni-M-O (M=Sn, Ti and W) catalysts prepared from dry mixing method for oxidative dehydrogenation of ethane

    KAUST Repository

    Zhu, Haibo; Rosenfeld, Devon C.; Harb, Moussab; Anjum, Dalaver H.; Hedhili, Mohamed N.; Ould-Chikh, Samy; Basset, Jean-Marie

    2016-01-01

    A new generation of Ni-Sn-O, Ni-Ti-O, and Ni-W-O catalysts has been prepared by a solid state grinding method. In each case the doping metal varied from 2.5% to 20%. These catalysts exhibited higher activity and selectivity for ethane oxidative dehydrogenation (ODH) than conventionally prepared mixed oxides. Detailed characterisation was achieved using XRD, N2 adsorption, H2-TPR, SEM, TEM, and HAADF-STEM in order to study the detailed atomic structure and textural properties of the synthesized catalysts. Two kinds of typical structures are found in these mixed oxides, which are (major) “NixMyO” (M = Sn, Ti or W) solid solution phases (NiO crystalline structure with doping atom incorporated in the lattice) and (minor) secondary phases (SnO2, TiO2 or WO3). The secondary phase exists as a thin layer around small “NixMyO” particles, lowering the aggregation of nanoparticles during the synthesis. DFT calculations on the formation energies of M-doped NiO structures (M = Sn, Ti, W) clearly confirm the thermodynamic feasibility of incorporating these doping metals into NiO struture. The incorporation of doping metals into the NiO lattice decreases the number of holes (h+) localized on lattice oxygen (O2- + h+ ➔ O●-), which is the main reason for the improved catalytic performance (O●- is known to favor complete ethane oxidation to CO2). The high efficiency of ethylene production achieved in these particularly prepared mixed oxide catalysts indicates that the solid grinding method could serve as a general and practical approach for the preparation of doped NiO based catalysts.

  8. Ni-M-O (M=Sn, Ti and W) catalysts prepared from dry mixing method for oxidative dehydrogenation of ethane

    KAUST Repository

    Zhu, Haibo

    2016-03-25

    A new generation of Ni-Sn-O, Ni-Ti-O, and Ni-W-O catalysts has been prepared by a solid state grinding method. In each case the doping metal varied from 2.5% to 20%. These catalysts exhibited higher activity and selectivity for ethane oxidative dehydrogenation (ODH) than conventionally prepared mixed oxides. Detailed characterisation was achieved using XRD, N2 adsorption, H2-TPR, SEM, TEM, and HAADF-STEM in order to study the detailed atomic structure and textural properties of the synthesized catalysts. Two kinds of typical structures are found in these mixed oxides, which are (major) “NixMyO” (M = Sn, Ti or W) solid solution phases (NiO crystalline structure with doping atom incorporated in the lattice) and (minor) secondary phases (SnO2, TiO2 or WO3). The secondary phase exists as a thin layer around small “NixMyO” particles, lowering the aggregation of nanoparticles during the synthesis. DFT calculations on the formation energies of M-doped NiO structures (M = Sn, Ti, W) clearly confirm the thermodynamic feasibility of incorporating these doping metals into NiO struture. The incorporation of doping metals into the NiO lattice decreases the number of holes (h+) localized on lattice oxygen (O2- + h+ ➔ O●-), which is the main reason for the improved catalytic performance (O●- is known to favor complete ethane oxidation to CO2). The high efficiency of ethylene production achieved in these particularly prepared mixed oxide catalysts indicates that the solid grinding method could serve as a general and practical approach for the preparation of doped NiO based catalysts.

  9. Narrow thermal hysteresis of NiTi shape memory alloy thin films with submicrometer thickness

    Energy Technology Data Exchange (ETDEWEB)

    Hou, Huilong; Hamilton, Reginald F., E-mail: rfhamilton@psu.edu; Horn, Mark W. [Department of Engineering Science and Mechanics, The Pennsylvania State University, University Park, Pennsylvania 16802 (United States)

    2016-09-15

    NiTi shape memory alloy (SMA) thin films were fabricated using biased target ion beam deposition (BTIBD), which is a new technique for fabricating submicrometer-thick SMA thin films, and the capacity to exhibit shape memory behavior was investigated. The thermally induced shape memory effect (SME) was studied using the wafer curvature method to report the stress-temperature response. The films exhibited the SME in a temperature range above room temperature and a narrow thermal hysteresis with respect to previous reports. To confirm the underlying phase transformation, in situ x-ray diffraction was carried out in the corresponding phase transformation temperature range. The B2 to R-phase martensitic transformation occurs, and the R-phase transformation is stable with respect to the expected conversion to the B19′ martensite phase. The narrow hysteresis and stable R-phase are rationalized in terms of the unique properties of the BTIBD technique.

  10. Cyclic testing of thin Ni films on a pre-tensile compliant substrate

    Energy Technology Data Exchange (ETDEWEB)

    Wei, He [Department of Mechanics, Tianjin University, 135 Yaguan Rd, Jinnan, 300350 Tianjin (China); Département Physique et Mécanique d es Matériaux, Institut Pprime, CNRS–Université de Poitiers, Bd Marie et Pierre Curie, Futuroscope, 86962 (France); Renault, Pierre-Olivier, E-mail: pierre.olivier.renault@univ-poitiers.fr [Département Physique et Mécanique d es Matériaux, Institut Pprime, CNRS–Université de Poitiers, Bd Marie et Pierre Curie, Futuroscope, 86962 (France); Bourhis, Eric Le [Département Physique et Mécanique d es Matériaux, Institut Pprime, CNRS–Université de Poitiers, Bd Marie et Pierre Curie, Futuroscope, 86962 (France); Wang, Shibin [Department of Mechanics, Tianjin University, 135 Yaguan Rd, Jinnan, 300350 Tianjin (China); Goudeau, Philippe [Département Physique et Mécanique d es Matériaux, Institut Pprime, CNRS–Université de Poitiers, Bd Marie et Pierre Curie, Futuroscope, 86962 (France)

    2017-05-17

    A novel experimental approach to study the cyclic plastic deformation of thin metallic films is presented. 300 nm thick Ni films are deposited on both sides of a pre-tensile soft substrate which allows to deform the films alternately in tension and compression (approximately from +2.7 GPa down to −2 GPa) relative to the as-deposited residual stress state. Nanocrystalline thin films' intrinsic elastic strains (or stresses) and true strains have been measured step by step during two loading/unloading cycles thanks to the X-ray diffraction (XRD) and digital image correlation (DIC) techniques respectively. From the first cyclic deformation, a significant Bauschinger effect is evidenced in the films, however, little or no cyclic hardening is observed during the two cyclic tests.

  11. Thermal oxidation of InP surfaces modified with NiO + PbO mixtures

    International Nuclear Information System (INIS)

    Mittova, I.Ya.; Tomina, E.V.; Samsonov, A.A.; Lukin, A.N.; Simonov, S.P.

    2005-01-01

    The oxidation kinetics of (NiO + PbO)/InP, NiO/InP and PbO/InP structures in an oxygen flow is studied in the temperature range of 400-550 deg C. It is shown by IR spectroscopy that the thermal oxidation of (NiO + PbO)/InP structures leads to the formation of nickel and lead polyphosphates and indium ortho- and metaphosphates. The nickel phosphates may then gradually transform into diphosphates, depending on the oxidation temperature, whereas the lead phosphates undergo no changes [ru

  12. Superconducting oxide thin films by ion beam sputtering

    International Nuclear Information System (INIS)

    Kobrin, P.H.; DeNatale, J.F.; Housley, R.M.; Flintoff, J.F.; Harker, A.B.

    1987-01-01

    Superconducting thin films of ternary copper oxides from the Y-Ba-Cu-O and La-Sr-Cu-O systems have been deposited by ion beam sputtering of ceramic targets. Crystallographic orientation of the polycrystalline films has been shown to vary with substrate identity, deposition temperature and annealing temperature. The onset of the superconductive transition occurs near 90K in the Y-Ba-Cu-O system. Fe impurities of < 0.2% have been found to inhibit the superconducting transition, probably by migrating to the grain boundaries

  13. Ag@Ni core-shell nanowire network for robust transparent electrodes against oxidation and sulfurization.

    Science.gov (United States)

    Eom, Hyeonjin; Lee, Jaemin; Pichitpajongkit, Aekachan; Amjadi, Morteza; Jeong, Jun-Ho; Lee, Eungsug; Lee, Jung-Yong; Park, Inkyu

    2014-10-29

    Silver nanowire (Ag NW) based transparent electrodes are inherently unstable to moist and chemically reactive environment. A remarkable stability improvement of the Ag NW network film against oxidizing and sulfurizing environment by local electrodeposition of Ni along Ag NWs is reported. The optical transmittance and electrical resistance of the Ni deposited Ag NW network film can be easily controlled by adjusting the morphology and thickness of the Ni shell layer. The electrical conductivity of the Ag NW network film is increased by the Ni coating via welding between Ag NWs as well as additional conductive area for the electron transport by electrodeposited Ni layer. Moreover, the chemical resistance of Ag NWs against oxidation and sulfurization can be dramatically enhanced by the Ni shell layer electrodeposited along the Ag NWs, which provides the physical barrier against chemical reaction and diffusion as well as the cathodic protection from galvanic corrosion. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  14. Uniform photoresponse in thermally oxidized Ni and MoS2 heterostructures

    International Nuclear Information System (INIS)

    Luo, Wei; Peng, Gang; Wang, Fei; Miao, Feng; Zhang, Xue-Ao; Qin, Shiqiao

    2017-01-01

    Non-uniform photocurrent is usually generated at the overlapped region of the heterostructures, and its potential applications may be hindered by the spatial uniformity issue of the device photoresponse. Here, nearly a uniform photoresponse at the overlapped region of the thermally oxidized Ni and molybdenum disulphide (MoS 2 ) heterostructures is obtained. Further characterizations reveal that several nanometers Ni is rightly under the NiO x layer formed at the surface of the film in the oxidation process. The heterostructures based on layered MoS 2 /NiO x /Ni with highly conductive bottom Ni show a high uniform photoresponse with an external quantum efficiency (EQE) of 1.4% at 532 nm. Moreover, successful integration of multiple devices suggests a great priority for such a structure for highly integrated uniform photodetectors. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  15. Oxidation states of Fe in LaNi1-xFexO3

    International Nuclear Information System (INIS)

    Goeta, A.E.; Falcon, H.; Carbonio, R.

    1994-01-01

    The distribution of oxidation states in perovskites of the type LaA 1-x B x O 3 (A and B transition metal ions) can be ''tailored'' by x variation. In particular, in LaNiO 3 it has been shown that Fe substitution for Ni foces some Ni 3+ into Ni 2+ , while some Fe 3+ changes into the unusual Fe 4+ state. In addition, the existence of mixed oxidation states of Fe and/or Ni in LaNi 1-x Fe x O 3 has been related to its catalytic activity in hydrogen peroxide decomposition. The Fe 4+ population, obtained using Moessbauer spectroscopy, was found to be constant for all the analyzed annealing temperatures for x = 0.25 concentration, where the isomer shift difference for both states is the highest and the catalytic activity is maximum. (orig.)

  16. Uniform photoresponse in thermally oxidized Ni and MoS{sub 2} heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Luo, Wei [College of Science, National University of Defense Technology, Changsha (China); National Laboratory of Solid State Microstructures, School of Physics, Nanjing University (China); Peng, Gang; Wang, Fei [College of Science, National University of Defense Technology, Changsha (China); Miao, Feng [National Laboratory of Solid State Microstructures, School of Physics, Nanjing University (China); Zhang, Xue-Ao; Qin, Shiqiao [College of Science, National University of Defense Technology, Changsha (China); State Key Laboratory of High Performance Computing, National University of Defense Technology, Changsha (China)

    2017-09-15

    Non-uniform photocurrent is usually generated at the overlapped region of the heterostructures, and its potential applications may be hindered by the spatial uniformity issue of the device photoresponse. Here, nearly a uniform photoresponse at the overlapped region of the thermally oxidized Ni and molybdenum disulphide (MoS{sub 2}) heterostructures is obtained. Further characterizations reveal that several nanometers Ni is rightly under the NiO{sub x} layer formed at the surface of the film in the oxidation process. The heterostructures based on layered MoS{sub 2}/NiO{sub x}/Ni with highly conductive bottom Ni show a high uniform photoresponse with an external quantum efficiency (EQE) of 1.4% at 532 nm. Moreover, successful integration of multiple devices suggests a great priority for such a structure for highly integrated uniform photodetectors. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  17. Combinatorial study of zinc tin oxide thin-film transistors

    Science.gov (United States)

    McDowell, M. G.; Sanderson, R. J.; Hill, I. G.

    2008-01-01

    Groups of thin-film transistors using a zinc tin oxide semiconductor layer have been fabricated via a combinatorial rf sputtering technique. The ZnO :SnO2 ratio of the film varies as a function of position on the sample, from pure ZnO to SnO2, allowing for a study of zinc tin oxide transistor performance as a function of channel stoichiometry. The devices were found to have mobilities ranging from 2to12cm2/Vs, with two peaks in mobility in devices at ZnO fractions of 0.80±0.03 and 0.25±0.05, and on/off ratios as high as 107. Transistors composed predominantly of SnO2 were found to exhibit light sensitivity which affected both the on/off ratios and threshold voltages of these devices.

  18. High mobility transparent conducting oxides for thin film solar cells

    International Nuclear Information System (INIS)

    Calnan, S.; Tiwari, A.N.

    2010-01-01

    A special class of transparent conducting oxides (TCO) with high mobility of > 65 cm 2 V -1 s -1 allows film resistivity in the low 10 -4 Ω cm range and a high transparency of > 80% over a wide spectrum, from 300 nm to beyond 1500 nm. This exceptional coincidence of desirable optical and electrical properties provides opportunities to improve the performance of opto-electronic devices and opens possibilities for new applications. Strategies to attain high mobility (HM) TCO materials as well as the current status of such materials based on indium and cadmium containing oxides are presented. Various concepts used to understand the underlying mechanisms for high mobility in HMTCO films are discussed. Examples of HMTCO layers used as transparent electrodes in thin film solar cells are used to illustrate possible improvements in solar cell performance. Finally, challenges and prospects for further development of HMTCO materials are discussed.

  19. Performance of ethanol electro-oxidation on Ni-Cu alloy nanowires through composition modulation.

    Science.gov (United States)

    Tian, Xi-Ke; Zhao, Xiao-Yu; Zhang, Li-de; Yang, Chao; Pi, Zhen-Bang; Zhang, Su-Xin

    2008-05-28

    To reduce the cost of the catalyst for direct ethanol fuel cells and improve its catalytic activity, highly ordered Ni-Cu alloy nanowire arrays have been fabricated successfully by differential pulse current electro-deposition into the pores of a porous anodic alumina membrane (AAMs). The energy dispersion spectrum, scanning and transmission electron microscopy were utilized to characterize the composition and morphology of the Ni-Cu alloy nanowire arrays. The results reveal that the nanowires in the array are uniform, well isolated and parallel to each other. The catalytic activity of the nanowire electrode arrays for ethanol oxidation was tested and the binary alloy nanowire array possesses good catalytic activity for the electro-oxidation of ethanol. The performance of ethanol electro-oxidation was controlled by varying the Cu content in the Ni-Cu alloy and the Ni-Cu alloy nanowire electrode shows much better stability than the pure Ni one.

  20. Performance of ethanol electro-oxidation on Ni-Cu alloy nanowires through composition modulation

    International Nuclear Information System (INIS)

    Tian Xike; Zhao Xiaoyu; Yang Chao; Pi Zhenbang; Zhang Lide; Zhang Suxin

    2008-01-01

    To reduce the cost of the catalyst for direct ethanol fuel cells and improve its catalytic activity, highly ordered Ni-Cu alloy nanowire arrays have been fabricated successfully by differential pulse current electro-deposition into the pores of a porous anodic alumina membrane (AAMs). The energy dispersion spectrum, scanning and transmission electron microscopy were utilized to characterize the composition and morphology of the Ni-Cu alloy nanowire arrays. The results reveal that the nanowires in the array are uniform, well isolated and parallel to each other. The catalytic activity of the nanowire electrode arrays for ethanol oxidation was tested and the binary alloy nanowire array possesses good catalytic activity for the electro-oxidation of ethanol. The performance of ethanol electro-oxidation was controlled by varying the Cu content in the Ni-Cu alloy and the Ni-Cu alloy nanowire electrode shows much better stability than the pure Ni one

  1. Structure characterization of Ni/NiO and Ti/TiO2 interfaces

    International Nuclear Information System (INIS)

    Lamine, Brahim

    1983-01-01

    This research thesis reports the structure characterization of Ni-NiO and Ti-TiO 2 interfaces through an in-situ investigation of thin blade oxidation, of oxide germination and growth, and through a determination of mutual metal/oxide orientation relationships. Thin films of TiO 2 have also been characterized and the study of the influence of vacuum annealing on TiO 2 layer structure and morphology has been attempted. The examination of metal-oxide interface reveals a duplex structure of NiO and TiO 2 layers, and a preferential grain boundary oxidation of the underlying metal [fr

  2. Ni(III) - a new oxidant for the potentiometric determination of plutonium

    International Nuclear Information System (INIS)

    Gopinath, N.; Rama Rao, G.A.; Natarajan, P.R.

    1986-01-01

    Ni(III) was employed as an oxidant for the quantitative oxidation of plutonium to its hexavalent state and this makes possible to determine plutonium concentrations potentiometrically by the Fe(II)-dichromate redox titration method. The unreacted oxidant is completely reduced by sulphamic acid prior to the determination of plutonium. (author)

  3. Nanoscale reduction of graphene oxide thin films and its characterization.

    Science.gov (United States)

    Lorenzoni, M; Giugni, A; Di Fabrizio, E; Pérez-Murano, Francesc; Mescola, A; Torre, B

    2015-07-17

    In this paper, we report on a method to reduce thin films of graphene oxide (GO) to a spatial resolution better than 100 nm over several tens of micrometers by means of an electrochemical scanning probe based lithography. In situ tip-current measurements show that an edged drop in electrical resistance characterizes the reduced areas, and that the reduction process is, to a good approximation, proportional to the applied bias between the onset voltage and the saturation thresholds. An atomic force microscope (AFM) quantifies the drop of the surface height for the reduced profile due to the loss of oxygen. Complementarily, lateral force microscopy reveals a homogeneous friction coefficient of the reduced regions that is remarkably lower than that of native graphene oxide, confirming a chemical change in the patterned region. Micro Raman spectroscopy, which provides access to insights into the chemical process, allows one to quantify the restoration and de-oxidation of the graphitic network driven by the electrochemical reduction and to determine characteristic length scales. It also confirms the homogeneity of the process over wide areas. The results shown were obtained from accurate analysis of the shift, intensity and width of Raman peaks for the main vibrational bands of GO and reduced graphene oxide (rGO) mapped over large areas. Concerning multilayered GO thin films obtained by drop-casting we have demonstrated an unprecedented lateral resolution in ambient conditions as well as an improved control, characterization and understanding of the reduction process occurring in GO randomly folded multilayers, useful for large-scale processing of graphene-based material.

  4. Nanoscale reduction of graphene oxide thin films and its characterization

    KAUST Repository

    Lorenzoni, M.

    2015-06-29

    In this paper, we report on a method to reduce thin films of graphene oxide (GO) to a spatial resolution better than 100 nm over several tens of micrometers by means of an electrochemical scanning probe based lithography. In situ tip-current measurements show that an edged drop in electrical resistance characterizes the reduced areas, and that the reduction process is, to a good approximation, proportional to the applied bias between the onset voltage and the saturation thresholds. An atomic force microscope (AFM) quantifies the drop of the surface height for the reduced profile due to the loss of oxygen. Complementarily, lateral force microscopy reveals a homogeneous friction coefficient of the reduced regions that is remarkably lower than that of native graphene oxide, confirming a chemical change in the patterned region. Micro Raman spectroscopy, which provides access to insights into the chemical process, allows one to quantify the restoration and de-oxidation of the graphitic network driven by the electrochemical reduction and to determine characteristic length scales. It also confirms the homogeneity of the process over wide areas. The results shown were obtained from accurate analysis of the shift, intensity and width of Raman peaks for the main vibrational bands of GO and reduced graphene oxide (rGO) mapped over large areas. Concerning multilayered GO thin films obtained by drop-casting we have demonstrated an unprecedented lateral resolution in ambient conditions as well as an improved control, characterization and understanding of the reduction process occurring in GO randomly folded multilayers, useful for large-scale processing of graphene-based material. © 2015 IOP Publishing Ltd.

  5. Hydrogen Oxidation Reaction at the Ni/YSZ Anode of Solid Oxide Fuel Cells from First Principles

    Science.gov (United States)

    Cucinotta, Clotilde S.; Bernasconi, Marco; Parrinello, Michele

    2011-11-01

    By means of ab initio simulations we here provide a comprehensive scenario for hydrogen oxidation reactions at the Ni/zirconia anode of solid oxide fuel cells. The simulations have also revealed that in the presence of water chemisorbed at the oxide surface, the active region for H oxidation actually extends beyond the metal/zirconia interface unraveling the role of water partial pressure in the decrease of the polarization resistance observed experimentally.

  6. Density functional theory simulation of titanium migration and reaction with oxygen in the early stages of oxidation of equiatomic NiTi alloy.

    Science.gov (United States)

    Nolan, Michael; Tofail, Syed A M

    2010-05-01

    The biocompatibility of NiTi shape memory alloys (SMA) has made possible applications in self-expandable cardio-vascular stents, stone extraction baskets, catheter guide wires and other invasive and minimally invasive biomedical devices. The NiTi intermetallic alloy spontaneously forms a thin passive layer of TiO(2), which provides its biocompatibility. The oxide layer is thought to form as the Ti in the alloy surface reacts with oxygen, resulting in a depletion of Ti in the subsurface region - experimental evidence indicates formation of a Ni-rich layer below the oxide film. In this paper, we study the initial stages of oxide growth on the (110) surface of the NiTi alloy to understand the formation of alloy/oxide interface. We initially adsorb atomic and molecular oxygen on the (110) surface and then successively add O(2) molecules, up to 2 monolayer of O(2). Oxygen adsorption always results in a large energy gain. With atomic oxygen, Ti is pulled out of the surface layer leaving behind a Ni-rich subsurface region. Molecular O(2), on the other hand adsorbs dissociatively and pulls a Ti atom farther out of the surface layer. The addition of further O(2) up to 1 monolayer is also dissociative and results in complete removal of Ti from the initial surface layer. When further O(2) is added up to 2 monolayer, Ti is pulled even further out of the surface and a single thin layer of composition O-Ti-O is formed. The electronic structure shows that the metallic character of the alloy is unaffected by interaction with oxygen and formation of the oxide layer, consistent with the oxide layer being a passivant. Copyright 2010 Elsevier Ltd. All rights reserved.

  7. In-situ hybrid study of thermal behaviour of Znsbnd Ni and Znsbnd Nisbnd Al2O3 nanocrystallite thin films induced TEA/MEA by electrocodeposition

    Science.gov (United States)

    Abdulwahab, M.; Fayomi, O. S. I.; Popoola, A. P. I.; Dodo, M. R.

    Our present investigation focuses on the thermal stability of already developed electroforms of Znsbnd Ni and Znsbnd Nisbnd Al2O3 thin films induced with triethylamine (TEA) and monoethylamine (MEA) as surfactant by electrocodeposition on mild steel substrate with the aim to re-examine its micro-hardness and degradation behaviour in static sodium chloride solution. In the event, the samples were thermally treated at 200 °C and air cooled. The results obtained showed that the developed composites are thermally stable with hardness value of the Znsbnd Nisbnd Al2O3 coated; 185 Hv increased to 190.5 Hv indicating a 2.89% improvement. Noticeably, in the Znsbnd Ni coatings, a decrease in the hardness with 26.67% was observed. The oxidation resistance was however favored for both composites.

  8. Combinatorial experiment in Ni-Ti thin films by laser interference structuring

    International Nuclear Information System (INIS)

    Liu, K.W.; Gachot, C.; Leibenguth, P.; Muecklich, F.

    2005-01-01

    Combinatorial experiments are achieved on periodically structured Ni-Ti thin film composition spreads by laser interference irradiation using a Nd:YAG laser. Continuous Ni-Ti compositional spreads covering almost the whole binary system are prepared by combining sputter mask, shutter and movement of substrate. The continuous compositional spread is subsequently micro-structured into a sample library consisting of well-defined lines of individual samples by laser interference irradiation. The composition and microstructure effects in continuous spread and sample libraries after laser structuring are explored by scanning electron microscopy (SEM) with energy dispersive spectroscopy (EDS), X-ray diffraction (XRD) and white light interferometry (WLI) microscopy. The sample library consists of individual samples with a distance of about 5 μm and a composition resolution as high as 0.1 at.% in between. Although, there are certain difficulties so far in obtaining the optimized laser fluence for the spread, the laser interference irradiation provides an effective way to prepare thin film libraries with around 200 sample lines within 1 mm

  9. Electrochromic Devices Based on Porous Tungsten Oxide Thin Films

    Directory of Open Access Journals (Sweden)

    Y. Djaoued

    2012-01-01

    Full Text Available Recent developments in the synthesis of transition metal oxides in the form of porous thin films have opened up opportunities in the construction of electrochromic devices with enhanced properties. In this paper, synthesis, characterization and electrochromic applications of porous WO3 thin films with different nanocrystalline phases, such as hexagonal, monoclinic, and orthorhombic, are presented. Asymmetric electrochromic devices have been constructed based on these porous WO3 thin films. XRD measurements of the intercalation/deintercalation of Li+ into/from the WO3 layer of the device as a function of applied coloration/bleaching voltages show systematic changes in the lattice parameters associated with structural phase transitions in LixWO3. Micro-Raman studies show systematic crystalline phase changes in the spectra of WO3 layers during Li+ ion intercalation and deintercalation, which agree with the XRD data. These devices exhibit interesting optical modulation (up to ~70% due to intercalation/deintercalation of Li ions into/from the WO3 layer of the devices as a function of applied coloration/bleaching voltages. The obtained optical modulation of the electrochromic devices indicates that, they are suitable for applications in electrochromic smart windows.

  10. Glyphosate and glufosinate detection at electrogenerated NiAl-LDH thin films

    Energy Technology Data Exchange (ETDEWEB)

    Khenifi, Aicha [Laboratoire des Materiaux Inorganiques, UMR CNRS 6002, Universite Blaise Pascal, Clermont-Ferrand (France); Laboratoire de physico-chimie des materiaux, catalyse et environnement Usto, Oran, El M' nouar (Algeria); Derriche, Zoubir [Laboratoire de physico-chimie des materiaux, catalyse et environnement Usto, Oran, El M' nouar (Algeria); Forano, Claude; Prevot, Vanessa [Laboratoire des Materiaux Inorganiques, UMR CNRS 6002, Universite Blaise Pascal, Clermont-Ferrand (France); Mousty, Christine, E-mail: Christine.Mousty@univ-bpclermont.fr [Laboratoire des Materiaux Inorganiques, UMR CNRS 6002, Universite Blaise Pascal, Clermont-Ferrand (France); Scavetta, Erika, E-mail: scavetta@fci.unibo.it [Laboratorio di Chimica Analitica, Dipartimento di Chimica Fisica ed Inorganica, Universita degli Studi di Bologna (Italy); Ballarin, Barbara; Guadagnini, Lorella; Tonelli, Domenica [Laboratorio di Chimica Analitica, Dipartimento di Chimica Fisica ed Inorganica, Universita degli Studi di Bologna (Italy)

    2009-11-10

    An amperometric sensor based on Ni{sub 1-x}Al{sub x}(OH){sub 2}NO{sub 3x}.nH{sub 2}O layered double hydroxide (LDH) has been developed for the electrochemical analysis in one step of two herbicides: glyphosate (N-(phosphonomethyl)glycine, Glyp) and glufosinate ((DL-homoalanine-4-yl)-methylphosphinic acid, Gluf). NiAl-LDH was prepared by coprecipitation or by electrodeposition at the Pt electrode surface. Inorganic films were fully characterized by X-ray diffraction, Raman spectroscopy and scanning electron microscopy. Adsorption isotherms of Glyp onto this inorganic lamellar material have been established. Electrocatalytic oxidation of Glyp and Gluf is possible at the Ni{sup 3+} centres of the structure. The electrochemical responses of the NiAl-LDH modified electrode were obtained by cyclic voltammetry and chronoamperometry at 0.49 V/SCE as a function of herbicide concentration in 0.1 M NaOH solution. The electrocatalytic response showed a linear dependence on the Glyp concentration ranging between 0.01 and 0.9 mM with a detection limit of 1 {mu}M and sensitivity 287 mA/M cm{sup 2}. The sensitivity found for Gluf was lower (178 mA/M cm{sup 2}).

  11. Continuum mechanics simulations of NiO/Ni-YSZ composites during reduction and re-oxidation

    DEFF Research Database (Denmark)

    Pihlatie, Mikko; Frandsen, Henrik Lund; Kaiser, Andreas

    2010-01-01

    for the dimensional change arises from the volumetric change related to the phase change NiO ↔ Ni. The measurable change in bulk length is given by the ceramic YSZ backbone as a response to the stress created by the chemical strain. The different subprocesses described in the model for YSZ were elastic and anelastic...... expansion, diffusional creep, grain boundary sliding (GBS) and microcracking due to excessive stress. In the Ni/NiO phase, nonelastic strains in terms of diffusional and power law creep were implemented, and additionally for NiO deformation due to microcracking and/or pseudoplasticity. Semi...

  12. The annealing temperature dependences of microstructures and magnetic properties in electro-chemical deposited CoNiFe thin films

    International Nuclear Information System (INIS)

    Suharyadi, Edi; Riyanto, Agus; Abraha, Kamsul

    2016-01-01

    CoNiFe thin films with various compositions had been successfully fabricated using electro-chemical deposition method. The crystal structure of Co_6_5Ni_1_5Fe_2_0, Co_6_2Ni_1_5Fe_2_3, and Co_5_5Ni_1_5Fe_3_0 thin films was fcc, bcc-fcc mix, and bcc, respectively. The difference crystal structure results the difference in magnetic properties. The saturation magnetic flux density (Bs) of Co_6_5Ni_1_5Fe_2_0, Co_6_2Ni_1_5Fe_2_3, and Co_5_5Ni_1_5Fe_3_0 thin films was 1.89 T, 1.93 T, and 2.05 T, respectively. An optimal annealing temperature was determined for controlling the microstructure and magnetic properties of CoNiFe thin films. Depending on annealing temperature, the ratio of bcc and fcc structure varied without changing the film composition. By annealing at temperature of T ≥ 350°C, the intensity ratio of X-ray diffraction peaks for bcc(110) to fcc(111) increased. The increase of phase ratio of bcc(110) to fcc(111) caused the increase of Bs, from 1.89 T to 1.95 T. Coercivity (Hc) also increased after annealing, from 2.6 Oe to 18.6 Oe for fcc phase thin films, from 2.0 Oe to 12.0 Oe for fcc-bcc mix phase thin films, and 7.8 Oe to 8 Oe for bcc phase thin films. The changing crystal structures during annealing process indicated that the thermal treatment at high temperature cause the changing crystallinity and atomic displacement. The TEM bright-field images with corresponding selected-area electron diffraction (SAED) patterns showed that there are strongly effects of thermal annealing on the size of fcc and bcc phase crystalline grain as described by size of individual spot and discontinuous rings. The size of crystalline grains increased by thermal annealing. The evolution of bcc and fcc structures of CoNiFe during annealing is though to be responsible for the change of magnetic properties.

  13. Differences observed in the surface morphology and microstructure of Ni-Fe-Cu ternary thin films electrochemically deposited at low and high applied current densities

    International Nuclear Information System (INIS)

    Sarac, U; Kaya, M; Baykul, M C

    2016-01-01

    In this research, nanocrystalline Ni-Fe-Cu ternary thin films using electrochemical deposition technique were produced at low and high applied current densities onto Indium Tin Oxide (ITO) coated conducting glass substrates. Change of surface morphology and microstructural properties of the films were investigated. Energy dispersive X-ray spectroscopy (EDX) measurements showed that the Ni-Fe-Cu ternary thin films exhibit anomalous codeposition behaviour during the electrochemical deposition process. From the X-ray diffraction (XRD) analyses, it was revealed that there are two segregated phases such as Cu- rich and Ni-rich within the films. The crystallographic structure of the films was face-centered cubic (FCC). It was also observed that the film has lower lattice micro-strain and higher texture degree at high applied current density. Scanning electron microscopy (SEM) studies revealed that the films have rounded shape particles on the base part and cauliflower-like structures on the upper part. The film electrodeposited at high current density had considerably smaller rounded shape particles and cauliflower-like structures. From the atomic force microscopy (AFM) analyses, it was shown that the film deposited at high current density has smaller particle size and surface roughness than the film grown at low current density. (paper)

  14. Fabrication of NiO/zirconium oxide nanofibers by electrospinning

    Energy Technology Data Exchange (ETDEWEB)

    Sundarrajan, Subramanian, E-mail: sundarnus1@gmail.com [Department of Mechanical Engineering, NUS, 117576 (Singapore); Venkatesan, Arunachalam; Agarwal, Satya R.; Shaik Anwar Ahamed, Nabeela Nasreen [Department of Mechanical Engineering, NUS, 117576 (Singapore); Ramakrishna, Seeram, E-mail: seeram@nus.edu.sg [Department of Mechanical Engineering, NUS, 117576 (Singapore); King Saud University, Riyadh 11451 (Saudi Arabia); Institute of Materials Research and Engineering, 117602 (Singapore)

    2014-12-01

    The electrospinning technique has been used to fabricate 1D inorganic–organic composite nanofibers from solutions containing poly(vinyl alcohol) (PVA) and suitable aqueous precursors of nickel and zirconium ions. Upon calcination, nickel oxide/zirconia nanofibers retained the original morphological features of as-spun nanofibers. X-ray diffraction was used to identify the crystalline nature of the final product and analytical tools such as Fourier transform infrared (FTIR) spectroscopy, scanning electron microscopy (SEM), transmission electron microscopy (TEM) and atomic force microscopy (AFM) were employed to elucidate the pathway of ceramic phase formation and the systematic evolution of morphological features in the as-spun and calcined fibers. These fibers will find potential applications in biomedical field. - Highlights: • PVA/NiO/zirconia composite nanofibers were synthesized via electrospinning. • Green processing of nanofibers using only water as solvent. • Calcination of composite nanofibers to yield ceramic nanofibers. • High aspect ratio nanofibers with diameters 106 ± 25 nm • The application of these fibers as dental composites and bone tissue engineering.

  15. The effect of silicon content on high temperature oxidation of 80Ni-20Cr alloys

    International Nuclear Information System (INIS)

    Takei, Atsushi; Nii, Kazuyoshi

    1981-01-01

    The effect of Si content on the oxidation behavior of 80Ni-20Cr alloys has been studied in the cyclic oxidation in an air stream at 1373K. The addition of 1% and 5%Si to the alloy lowered the mass gain in oxidation, whereas the amount of spalling of oxide scale was increased with the addition of Si. The structure of oxide layers observed by microphotography, X-ray diffraction and electron probe microanalysis (EPMA) were different with the Si content of alloys. The oxide layer of the alloy with 1%Si consists of multi-layers, that is Ni oxide, Cr 2 O 3 and SiO 2 as the external oxide layer. The oxide layer remaining on the alloy with 5%Si, however, was made of a single oxide layer of Cr 2 O 3 containing small amounts of Si and Ni. In spite of the fact that the amount of Si in this alloy is larger than that of the alloy with 1%Si, the SiO 2 oxide layer was not observed at the oxide-alloy interface. It was found by EPMA that the concentration of Si in the oxidized 5%Si alloy substrate was increased in the vicinity of the surface, although Si in the 1%Si alloy was depleted. From the above results the internal oxidation of Si is assumed in the near-surface region of the 5%Si alloy. The internal oxidation of the 5%Si alloy was confirmed by an increase in hardness in the near-surface region. The difference in oxidation behavior between the 1%Si and 5%Si alloys can be understood under the assumption that the oxide layer formed of the 5%Si alloy contained much larger amounts of Ni and Si than that on the 1%Si alloy, and that this oxide layer tends to crack more easily, thus being less protective for the penetration of oxygen. (author)

  16. Strain-induced phenomenon in complex oxide thin films

    Science.gov (United States)

    Haislmaier, Ryan

    Complex oxide materials wield an immense spectrum of functional properties such as ferroelectricity, ferromagnetism, magnetoelectricity, optoelectricity, optomechanical, magnetoresistance, superconductivity, etc. The rich coupling between charge, spin, strain, and orbital degrees of freedom makes this material class extremely desirable and relevant for next generation electronic devices and technologies which are trending towards nanoscale dimensions. Development of complex oxide thin film materials is essential for realizing their integration into nanoscale electronic devices, where theoretically predicted multifunctional capabilities of oxides could add tremendous value. Employing thin film growth strategies such as epitaxial strain and heterostructure interface engineering can greatly enhance and even unlock novel material properties in complex oxides, which will be the main focus of this work. However, physically incorporating oxide materials into devices remains a challenge. While advancements in molecular beam epitaxy (MBE) of thin film oxide materials has led to the ability to grow oxide materials with atomic layer precision, there are still major limitations such as controlling stoichiometric compositions during growth as well as creating abrupt interfaces in multi-component layered oxide structures. The work done in this thesis addresses ways to overcome these limitations in order to harness intrinsic material phenomena. The development of adsorption-controlled stoichiometric growth windows of CaTiO3 and SrTiO3 thin film materials grown by hybrid MBE where Ti is supplied using metal-organic titanium tetraisopropoxide material is thoroughly outlined. These growth windows enable superior epitaxial strain-induced ferroelectric and dielectric properties to be accessed as demonstrated by chemical, structural, electrical, and optical characterization techniques. For tensile strained CaTiO3 and compressive strained SrTiO 3 films, the critical effects of

  17. Ultra-low power thin film transistors with gate oxide formed by nitric acid oxidation method

    International Nuclear Information System (INIS)

    Kobayashi, H.; Kim, W. B.; Matsumoto, T.

    2011-01-01

    We have developed a low temperature fabrication method of SiO 2 /Si structure by use of nitric acid, i.e., nitric acid oxidation of Si (NAOS) method, and applied it to thin film transistors (TFT). A silicon dioxide (SiO 2 ) layer formed by the NAOS method at room temperature possesses 1.8 nm thickness, and its leakage current density is as low as that of thermally grown SiO 2 layer with the same thickness formed at ∼900 deg C. The fabricated TFTs possess an ultra-thin NAOS SiO 2 /CVD SiO 2 stack gate dielectric structure. The ultrathin NAOS SiO 2 layer effectively blocks a gate leakage current, and thus, the thickness of the gate oxide layer can be decreased from 80 to 20 nm. The thin gate oxide layer enables to decrease the operation voltage to 2 V (cf. the conventional operation voltage of TFTs with 80 nm gate oxide: 12 V) because of the low threshold voltages, i.e., -0.5 V for P-ch TFTs and 0.5 V for N-ch TFTs, and thus the consumed power decreases to 1/36 of that of the conventional TFTs. The drain current increases rapidly with the gate voltage, and the sub-threshold voltage is ∼80 mV/dec. The low sub-threshold swing is attributable to the thin gate oxide thickness and low interface state density of the NAOS SiO 2 layer. (authors)

  18. Amorphous Zinc Oxide Integrated Wavy Channel Thin Film Transistor Based High Performance Digital Circuits

    KAUST Repository

    Hanna, Amir; Hussain, Aftab M.; Omran, Hesham; Alshareef, Sarah; Salama, Khaled N.; Hussain, Muhammad Mustafa

    2015-01-01

    High performance thin film transistor (TFT) can be a great driving force for display, sensor/actuator, integrated electronics, and distributed computation for Internet of Everything applications. While semiconducting oxides like zinc oxide (Zn

  19. Thermochemical characteristics of La n+1Ni nO3n+1 oxides

    International Nuclear Information System (INIS)

    Bannikov, D.O.; Safronov, A.P.; Cherepanov, V.A.

    2006-01-01

    Lanthanum nickelates: La 2 NiO 4+δ , La 3 Ni 2 O 7-δ , La 4 Ni 3 O 10-δ and LaNiO 3-δ the members of Ruddlesden-Popper series La n+1 Ni n O 3n+1 were prepared using citrate route. Dissolution enthalpies of complex oxides as well as a number of subsidiary substances were measured by means of Calvet calorimeter in 1 M solution of hydrochloric acid at 25 deg. C. The dissolution scheme of complex oxides in hydrochloric acid was proposed and enthalpies of formation of the complex oxides from binary oxides were calculated considering oxygen nonstoichiometry of these substances. Enthalpies of step-by-step oxidation were evaluated. Partial enthalpy contribution of LaO layers was calculated endothermic equals to 30.9 J/mol while partial enthalpy contribution of perovskite LaNiO 3 layers was negative equals to -97.0 J/mol. Enthalpy of formation of any complex oxide of Ruddlesden-Popper series fits very well to the linear regression based on these values

  20. Synthesis and characterization of multilayered BaTiO3/NiFe2O4 thin films

    Directory of Open Access Journals (Sweden)

    Branimir Bajac

    2013-03-01

    Full Text Available Presented research was focused on the fabrication of multiferroic thin film structures, composed of ferrielectric barium titanate perovskite phase and magnetostrictive nickel ferrite spinel phase. The applicability of different, solution based, deposition techniques (film growth from solution, dip coating and spin coating for thefabrication of multilayered BaTiO3 /NiFe2O4 thin films was investigated. It was shown that only spin coating produces films of desired nanostructure, thickness and smooth and crackfree surfaces.

  1. Investigation of oxidation resistance of Ni-Ti film used as oxygen diffusion barrier layer

    International Nuclear Information System (INIS)

    Liu, B.T.; Yan, X.B.; Zhang, X.; Zhou, Y.; Guo, Y.N.; Bian, F.; Zhang, X.Y.

    2009-01-01

    Ni-Ti films prepared at 10 W and 70 W by rf magnetron sputtering are investigated as the oxygen diffusion barrier layer, it is found that crystallinity of Ni-Ti film does not greatly depend on the deposition power. X-ray photoelectron spectroscopy indicates that Ni is still in the form of metallic state from the binding energies of both Ni 2p 3/2 and Ni 2p 1/2 spectra for the sample with 10 W prepared Ni-Ti, however, Ni is oxidized for 70 W prepared Ni-Ti film. Moreover, the (La 0.5 Sr 0.5 )CoO 3 /Pb(Zr 0.40 Ti 0.60 )O 3 /(La 0.5 Sr 0.5 )CoO 3 capacitor grown on high power prepared Ni-Ti film is leaky, however, the capacitor on low power prepared Ni-Ti film possesses very promising physical properties (i.e. remnant polarization of ∼27 μC/cm 2 at 5 V and maximum dielectric constant of 940). Leakage current density of the capacitor grown on low power prepared Ni-Ti film is further investigated, it meets ohmic behavior ( 1.0 V).

  2. Amorphous semiconducting and conducting transparent metal oxide thin films and production thereof

    Science.gov (United States)

    Perkins, John; Van Hest, Marinus Franciscus Antonius Maria; Ginley, David; Taylor, Matthew; Neuman, George A.; Luten, Henry A.; Forgette, Jeffrey A.; Anderson, John S.

    2010-07-13

    Metal oxide thin films and production thereof are disclosed. An exemplary method of producing a metal oxide thin film may comprise introducing at least two metallic elements and oxygen into a process chamber to form a metal oxide. The method may also comprise depositing the metal oxide on a substrate in the process chamber. The method may also comprise simultaneously controlling a ratio of the at least two metallic elements and a stoichiometry of the oxygen during deposition. Exemplary amorphous metal oxide thin films produced according to the methods herein may exhibit highly transparent properties, highly conductive properties, and/or other opto-electronic properties.

  3. Flexible Electronics Powered by Mixed Metal Oxide Thin Film Transistors

    Science.gov (United States)

    Marrs, Michael

    A low temperature amorphous oxide thin film transistor (TFT) and amorphous silicon PIN diode backplane technology for large area flexible digital x-ray detectors has been developed to create 7.9-in. diagonal backplanes. The critical steps in the evolution of the backplane process include the qualification and optimization of the low temperature (200 °C) metal oxide TFT and a-Si PIN photodiode process, the stability of the devices under forward and reverse bias stress, the transfer of the process to flexible plastic substrates, and the fabrication and assembly of the flexible detectors. Mixed oxide semiconductor TFTs on flexible plastic substrates suffer from performance and stability issues related to the maximum processing temperature limitation of the polymer. A novel device architecture based upon a dual active layer improves both the performance and stability. Devices are directly fabricated below 200 ºC on a polyethylene naphthalate (PEN) substrate using mixed metal oxides of either zinc indium oxide (ZIO) or indium gallium zinc oxide (IGZO) as the active semiconductor. The dual active layer architecture allows for adjustment to the saturation mobility and threshold voltage stability without the requirement of high temperature annealing, which is not compatible with flexible plastic substrates like PEN. The device performance and stability is strongly dependent upon the composition of the mixed metal oxide; this dependency provides a simple route to improving the threshold voltage stability and drive performance. By switching from a single to a dual active layer, the saturation mobility increases from 1.2 cm2/V-s to 18.0 cm2/V-s, while the rate of the threshold voltage shift decreases by an order of magnitude. This approach could assist in enabling the production of devices on flexible substrates using amorphous oxide semiconductors. Low temperature (200°C) processed amorphous silicon photodiodes were developed successfully by balancing the tradeoffs

  4. Structure, surface morphology and electrical properties of evaporated Ni thin films: Effect of substrates, thickness and Cu underlayer

    International Nuclear Information System (INIS)

    Hemmous, M.; Layadi, A.; Guittoum, A.; Souami, N.; Mebarki, M.; Menni, N.

    2014-01-01

    Series of Ni thin films have been deposited by thermal evaporation onto glass, Si(111), Cu, mica and Al 2 O 3 substrates with and without a Cu underlayer. The Ni thicknesses, t, are in the 4 to 163 nm range. The Cu underlayer has also been evaporated with a Cu thickness equal to 27, 52 and 90 nm. The effects of substrate, the Ni thickness and the Cu underlayer on the structural and electrical properties of Ni are investigated. Rutherford Backscattering Spectroscopy was used to probe the Ni/Substrate and Ni–Cu underlayer interfaces and to measure both Ni and Cu thicknesses. The texture, the strain and the grain size values were derived from X-ray diffraction experiments. The surface morphology is studied by means of a Scanning Electron Microscope. The electrical resistivity is measured by the four point probe. The Ni films grow with the <111> texture on all substrates. The Ni grain sizes D increase with increasing thickness for the glass, Si and mica substrates and decrease for the Cu one. The strain ε is positive for low thickness, decreases in magnitude and becomes negative as t increases. With the Cu underlayer, the growth mode goes through two phases: first, the stress (grain size) increases (decreases) up to a critical thickness t Cr , then stress is relieved and grain size increases. All these results will be discussed and correlated. - Highlights: • The structural and electrical properties of evaporated Ni thin films are studied. • The effect of thickness, substrates and Cu underlayer is investigated. • Texture, grain size, strain and surface morphology are discussed. • Growth modes are described as a function of Ni thickness

  5. Low temperature phase transition of the stoichiometric Ln2NiO4 oxides

    International Nuclear Information System (INIS)

    Fernandez, F.; Saez-Puche, R.; Botto, I.L.; Baran, E.J.

    1991-01-01

    In this paper we will present a comparative study of the structural phase transition in Ln 2 NiO 4 oxides, by means of neutron diffraction and infrared(IR) spectroscopy. In the Ln 2 NiO 4 oxides (Ln=La, Pr and Nd), there is a low temperature structural phase transition from the orthorhombic symmetry to a tetragonal phase, of first order character. The IR spectra show, at low temperature, a splitting of the bands related with the stretching Ni-O, strongly correlated with the phase transformation. From the neutron data, the phase transition can be visualized as a sudden tilt of the nickel octahedra

  6. Oxidation behavior of a Ni-Fe support in SOFC anode atmosphere

    DEFF Research Database (Denmark)

    Xu, Na; Chen, Ming; Han, Minfang

    2018-01-01

    In this work, we investigated the long-term oxidation behavior of a Ni-Fe (1:1 weight ratio) support for solid oxide fuel cell (SOFC) applications. Ni-Fe supports were obtained through tape casting, high temperature sintering and pre-reducing in 97% H2/N2 (9/91)-3% H2O at 750 and 1000 °C, respect...... annealed in the two atmospheres maintained sufficiently high conductivity. The results from the current work demonstrate that the porous Ni-Fe support can be well employed in SOFCs, especially metal-supported SOFCs....

  7. High temperature oxidation and corrosion behavior of Ni-base superalloy in He environment

    International Nuclear Information System (INIS)

    Lee, Gyoeng Geun; Park, Ji Yeon; Jung, Su jin

    2010-11-01

    Ni-base superalloy is considered as a IHX (Intermediate Heat Exchanger) material for VHTR (Very High Temperature Gas-Cooled Reactor). The helium environment in VHTR contains small amounts of impure gases, which cause oxidation, carburization, and decarburization. In this report, we conducted the literature survey about the high temperature behavior of Ni-base superalloys in air and He environments. The basic information of Ni-base superalloy and the basic metal-oxidation theory were briefly stated. The He effect on the corrosion of Ni-base superalloy was also summarized. This works would provide a brief suggestion for the next research topic for the application of Ni-base superalloy to VHTR

  8. Comparison of Mechanical Properties of Ni[sub]3Al Thin Films in Disordered FCC and Ordered L1[sub]2 Phases

    OpenAIRE

    Nix, Wiliam D.; Saha, R.; Aziz, Michael; Hutchinson, John; Evans, Anthony G.; Huang, Yonggang

    2001-01-01

    We report the results of several experiments isolating the effect of long-range order on mechanical properties of intermetallic compounds. Kinetically disordered FCC Ni3Al (Ni 76%) thin films were produced by rapid solidification following pulsed laser melting. For comparison, compositionally and microstructurally identical films with ordered L12 structure were produced by subsequent annealing at 550 °C for 2 hours. These FCC and L12 Ni3Al thin films were tested by nanoindentation for hardnes...

  9. Effect of temperature and dissolved hydrogen on oxide films formed on Ni and Alloy 182 in simulated PWR water

    International Nuclear Information System (INIS)

    Mendonça, R.; Bosch, R.-W.; Van Renterghem, W.; Vankeerberghen, M.; Araújo Figueiredo, C. de

    2016-01-01

    Alloy 182 is a nickel-based weld metal, which is susceptible to stress corrosion cracking in PWR primary water. It shows a peak in SCC susceptibility at a certain temperature and hydrogen concentration. This peak is related to the electrochemical condition where the Ni to NiO transition takes place. One hypothesis is that the oxide layer at this condition is not properly developed and so the material is not optimally protected against SCC. Therefore the oxide layer formed on Alloy 182 is investigated as a function of the dissolved hydrogen concentration and temperature around this Ni/NiO transition. Exposure tests were performed with Alloy 182 and Ni coupons in a PWR environment at temperatures between 300 °C and 345 °C and dissolved hydrogen concentration between 5 and 35 cc (STP)H 2 /kg. Post-test analysis of the formed oxide layers were carried out by SEM, EDS and XPS. The exposure tests with Ni coupons showed that the Ni/NiO transition curve is at a higher temperature than the curve based on thermodynamic calculations. The exposure tests with Alloy 182 showed that oxide layers were present at all temperatures, but that the morphology changed from spinel crystals to needle like oxides when the Ni/NiO transition curve was approached. Oxide layers were present below the Ni/NiO transition curve i.e. when the Ni coupon was still free of oxides. In addition an evolved slip dissolution model was proposed that could explain the observed experimental results and the peak in SCC susceptibility for Ni-based alloys around the Ni/NiO transition. - Highlights: • Exposure tests with Ni-coupons showed that the Ni/NiO transition curve shifted to more oxidizing conditions. • The Ni specimens tested in PWR water were free of oxides at all temperatures. • The exposure tests with Alloy 182 showed that oxide layers were present at all temperatures. • The Alloy 182 surface morphology changed from spinel crystals to needle like oxides when the Ni/NiO curve was approached

  10. Effect of temperature and dissolved hydrogen on oxide films formed on Ni and Alloy 182 in simulated PWR water

    Energy Technology Data Exchange (ETDEWEB)

    Mendonça, R. [CAPES Foundation, Ministry of Education, Brasilia (Brazil); Bosch, R.-W., E-mail: rbosch@sckcen.be [SCK-CEN, Boeretang 200, 2400 Mol (Belgium); Van Renterghem, W.; Vankeerberghen, M. [SCK-CEN, Boeretang 200, 2400 Mol (Belgium); Araújo Figueiredo, C. de [CDTN/CNEN, Av. Antônio Carlos 6627, 31270-901 Belo Horizonte, MG (Brazil)

    2016-08-15

    Alloy 182 is a nickel-based weld metal, which is susceptible to stress corrosion cracking in PWR primary water. It shows a peak in SCC susceptibility at a certain temperature and hydrogen concentration. This peak is related to the electrochemical condition where the Ni to NiO transition takes place. One hypothesis is that the oxide layer at this condition is not properly developed and so the material is not optimally protected against SCC. Therefore the oxide layer formed on Alloy 182 is investigated as a function of the dissolved hydrogen concentration and temperature around this Ni/NiO transition. Exposure tests were performed with Alloy 182 and Ni coupons in a PWR environment at temperatures between 300 °C and 345 °C and dissolved hydrogen concentration between 5 and 35 cc (STP)H{sub 2}/kg. Post-test analysis of the formed oxide layers were carried out by SEM, EDS and XPS. The exposure tests with Ni coupons showed that the Ni/NiO transition curve is at a higher temperature than the curve based on thermodynamic calculations. The exposure tests with Alloy 182 showed that oxide layers were present at all temperatures, but that the morphology changed from spinel crystals to needle like oxides when the Ni/NiO transition curve was approached. Oxide layers were present below the Ni/NiO transition curve i.e. when the Ni coupon was still free of oxides. In addition an evolved slip dissolution model was proposed that could explain the observed experimental results and the peak in SCC susceptibility for Ni-based alloys around the Ni/NiO transition. - Highlights: • Exposure tests with Ni-coupons showed that the Ni/NiO transition curve shifted to more oxidizing conditions. • The Ni specimens tested in PWR water were free of oxides at all temperatures. • The exposure tests with Alloy 182 showed that oxide layers were present at all temperatures. • The Alloy 182 surface morphology changed from spinel crystals to needle like oxides when the Ni/NiO curve was

  11. Some observations on the high temperature oxidation behaviour of plasma sprayed Ni3Al coatings

    International Nuclear Information System (INIS)

    Singh, H.; Prakash, S.; Puri, D.

    2007-01-01

    High temperature oxidation resistance of the superalloys can be greatly enhanced by plasma sprayed coatings and this is a growing industry of considerable economic importance. The purpose of these coatings is to form long-lasting oxidation protective scales. In the current investigation, Ni 3 Al powder was prepared by mechanical mixing of pure nickel and aluminium powders in a ball mill. Subsequently Ni 3 Al powder was deposited on three Ni-base superalloys: Superni 600, Superni 601 and Superni 718 and, one Fe-base superalloy, Superfer 800H by shrouded plasma spray process. Oxidation studies were conducted on the coated superalloys in air at 900 deg. C under cyclic conditions for 50 cycles. Each cycle consisted of 1 h heating followed by 20 min of cooling in air. The thermogravimetric technique was used to approximate the kinetics of oxidation. All the coated superalloys nearly followed parabolic rate law of oxidation. X-ray diffraction, SEM/EDAX and EPMA techniques were used to analyse the oxidation products. The Ni 3 Al coating was found to be successful in maintaining its adherence to the superalloy substrates in all the cases. The oxide scales formed on the oxidised coated superalloys were found to be intact and spallation-free. XRD analysis revealed the presence of phases like NiO, Al 2 O 3 and NiAl 2 O 4 in the oxide scales, which are reported as protective oxides against high temperature oxidation. The XRD results were further supported by SEM/EDAX and EPMA

  12. Enhanced Oxidation-Resistant Cu@Ni Core-Shell Nanoparticles for Printed Flexible Electrodes.

    Science.gov (United States)

    Kim, Tae Gon; Park, Hye Jin; Woo, Kyoohee; Jeong, Sunho; Choi, Youngmin; Lee, Su Yeon

    2018-01-10

    In this work, the fabrication and application of highly conductive, robust, flexible, and oxidation-resistant Cu-Ni core-shell nanoparticle (NP)-based electrodes have been reported. Cu@Ni core-shell NPs with a tunable Ni shell thickness were synthesized by varying the Cu/Ni molar ratios in the precursor solution. Through continuous spray coating and flash photonic sintering without an inert atmosphere, large-area Cu@Ni NP-based conductors were fabricated on various polymer substrates. These NP-based electrodes demonstrate a low sheet resistance of 1.3 Ω sq -1 under an optical energy dose of 1.5 J cm -2 . In addition, they exhibit highly stable sheet resistances (ΔR/R 0 flexible heater fabricated from the Cu@Ni film is demonstrated, which shows uniform heat distribution and stable temperature compared to those of a pure Cu film.

  13. Metal oxide semiconductor thin-film transistors for flexible electronics

    Energy Technology Data Exchange (ETDEWEB)

    Petti, Luisa; Vogt, Christian; Büthe, Lars; Cantarella, Giuseppe; Tröster, Gerhard [Electronics Laboratory, Swiss Federal Institute of Technology, Zürich (Switzerland); Münzenrieder, Niko [Electronics Laboratory, Swiss Federal Institute of Technology, Zürich (Switzerland); Sensor Technology Research Centre, University of Sussex, Falmer (United Kingdom); Faber, Hendrik; Bottacchi, Francesca; Anthopoulos, Thomas D. [Department of Physics and Centre for Plastic Electronics, Imperial College London, London (United Kingdom)

    2016-06-15

    The field of flexible electronics has rapidly expanded over the last decades, pioneering novel applications, such as wearable and textile integrated devices, seamless and embedded patch-like systems, soft electronic skins, as well as imperceptible and transient implants. The possibility to revolutionize our daily life with such disruptive appliances has fueled the quest for electronic devices which yield good electrical and mechanical performance and are at the same time light-weight, transparent, conformable, stretchable, and even biodegradable. Flexible metal oxide semiconductor thin-film transistors (TFTs) can fulfill all these requirements and are therefore considered the most promising technology for tomorrow's electronics. This review reflects the establishment of flexible metal oxide semiconductor TFTs, from the development of single devices, large-area circuits, up to entirely integrated systems. First, an introduction on metal oxide semiconductor TFTs is given, where the history of the field is revisited, the TFT configurations and operating principles are presented, and the main issues and technological challenges faced in the area are analyzed. Then, the recent advances achieved for flexible n-type metal oxide semiconductor TFTs manufactured by physical vapor deposition methods and solution-processing techniques are summarized. In particular, the ability of flexible metal oxide semiconductor TFTs to combine low temperature fabrication, high carrier mobility, large frequency operation, extreme mechanical bendability, together with transparency, conformability, stretchability, and water dissolubility is shown. Afterward, a detailed analysis of the most promising metal oxide semiconducting materials developed to realize the state-of-the-art flexible p-type TFTs is given. Next, the recent progresses obtained for flexible metal oxide semiconductor-based electronic circuits, realized with both unipolar and complementary technology, are reported. In

  14. Energetic Surface Smoothing of Complex Metal-Oxide Thin Films

    International Nuclear Information System (INIS)

    Willmott, P.R.; Herger, R.; Schlepuetz, C.M.; Martoccia, D.; Patterson, B.D.

    2006-01-01

    A novel energetic smoothing mechanism in the growth of complex metal-oxide thin films is reported from in situ kinetic studies of pulsed laser deposition of La 1-x Sr x MnO 3 on SrTiO 3 , using x-ray reflectivity. Below 50% monolayer coverage, prompt insertion of energetic impinging species into small-diameter islands causes them to break up to form daughter islands. This smoothing mechanism therefore inhibits the formation of large-diameter 2D islands and the seeding of 3D growth. Above 50% coverage, islands begin to coalesce and their breakup is thereby suppressed. The energy of the incident flux is instead rechanneled into enhanced surface diffusion, which leads to an increase in the effective surface temperature of ΔT≅500 K. These results have important implications on optimal conditions for nanoscale device fabrication using these materials

  15. Solution processed metal oxide thin film hole transport layers for high performance organic solar cells

    Science.gov (United States)

    Steirer, K. Xerxes; Berry, Joseph J.; Chesin, Jordan P.; Lloyd, Matthew T.; Widjonarko, Nicodemus Edwin; Miedaner, Alexander; Curtis, Calvin J.; Ginley, David S.; Olson, Dana C.

    2017-01-10

    A method for the application of solution processed metal oxide hole transport layers in organic photovoltaic devices and related organic electronics devices is disclosed. The metal oxide may be derived from a metal-organic precursor enabling solution processing of an amorphous, p-type metal oxide. An organic photovoltaic device having solution processed, metal oxide, thin-film hole transport layer.

  16. Highly conductive grain boundaries in copper oxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Deuermeier, Jonas, E-mail: j.deuermeier@campus.fct.unl.pt [Department of Materials Science, Faculty of Science and Technology, i3N/CENIMAT, Universidade NOVA de Lisboa and CEMOP/UNINOVA, Campus de Caparica, 2829-516 Caparica (Portugal); Department of Materials and Earth Sciences, Technische Universität Darmstadt, Jovanka-Bontschits-Straße 2, D-64287 Darmstadt (Germany); Wardenga, Hans F.; Morasch, Jan; Siol, Sebastian; Klein, Andreas, E-mail: aklein@surface.tu-darmstadt.de [Department of Materials and Earth Sciences, Technische Universität Darmstadt, Jovanka-Bontschits-Straße 2, D-64287 Darmstadt (Germany); Nandy, Suman; Calmeiro, Tomás; Martins, Rodrigo; Fortunato, Elvira [Department of Materials Science, Faculty of Science and Technology, i3N/CENIMAT, Universidade NOVA de Lisboa and CEMOP/UNINOVA, Campus de Caparica, 2829-516 Caparica (Portugal)

    2016-06-21

    High conductivity in the off-state and low field-effect mobility compared to bulk properties is widely observed in the p-type thin-film transistors of Cu{sub 2}O, especially when processed at moderate temperature. This work presents results from in situ conductance measurements at thicknesses from sub-nm to around 250 nm with parallel X-ray photoelectron spectroscopy. An enhanced conductivity at low thickness is explained by the occurrence of Cu(II), which is segregated in the grain boundary and locally causes a conductivity similar to CuO, although the surface of the thick film has Cu{sub 2}O stoichiometry. Since grains grow with an increasing film thickness, the effect of an apparent oxygen excess is most pronounced in vicinity to the substrate interface. Electrical properties of Cu{sub 2}O grains are at least partially short-circuited by this effect. The study focuses on properties inherent to copper oxide, although interface effects cannot be ruled out. This non-destructive, bottom-up analysis reveals phenomena which are commonly not observable after device fabrication, but clearly dominate electrical properties of polycrystalline thin films.

  17. Spray Pyrolyzed Polycrystalline Tin Oxide Thin Film as Hydrogen Sensor

    Directory of Open Access Journals (Sweden)

    Ganesh E. Patil

    2010-09-01

    Full Text Available Polycrystalline tin oxide (SnO2 thin film was prepared by using simple and inexpensive spray pyrolysis technique (SPT. The film was characterized for their phase and morphology by X-ray diffraction (XRD and scanning electron microscopy (SEM, respectively. The crystallite size calculated from the XRD pattern is 84 nm. Conductance responses of the polycrystalline SnO2 were measured towards gases like hydrogen (H2, liquefied petroleum gas (LPG, ethanol vapors (C2H5OH, NH3, CO, CO2, Cl2 and O2. The gas sensing characteristics were obtained by measuring the sensor response as a function of various controlling factors like operating temperature, operating voltages (1 V, 5 V, 10 V 15 V, 20 V and 25 V and concentration of gases. The sensor response measurement showed that the SnO2 has maximum response to hydrogen. Furthermore; the SnO2 based sensor exhibited fast response and good recovery towards hydrogen at temperature 150 oC. The result of response towards H2 reveals that SnO2 thin film prepared by SPT would be a suitable material for the fabrication of the hydrogen sensor.

  18. Pyroelectricity of silicon-doped hafnium oxide thin films

    Science.gov (United States)

    Jachalke, Sven; Schenk, Tony; Park, Min Hyuk; Schroeder, Uwe; Mikolajick, Thomas; Stöcker, Hartmut; Mehner, Erik; Meyer, Dirk C.

    2018-04-01

    Ferroelectricity in hafnium oxide thin films is known to be induced by various doping elements and in solid-solution with zirconia. While a wealth of studies is focused on their basic ferroelectric properties and memory applications, thorough studies of the related pyroelectric properties and their application potential are only rarely found. This work investigates the impact of Si doping on the phase composition and ferro- as well as pyroelectric properties of thin film capacitors. Dynamic hysteresis measurements and the field-free Sharp-Garn method were used to correlate the reported orthorhombic phase fractions with the remanent polarization and pyroelectric coefficient. Maximum values of 8.21 µC cm-2 and -46.2 µC K-1 m-2 for remanent polarization and pyroelectric coefficient were found for a Si content of 2.0 at%, respectively. Moreover, temperature-dependent measurements reveal nearly constant values for the pyroelectric coefficient and remanent polarization over the temperature range of 0 ° C to 170 ° C , which make the material a promising candidate for IR sensor and energy conversion applications beyond the commonly discussed use in memory applications.

  19. Chemical vapour deposition of vanadium oxide thermochromic thin films

    Science.gov (United States)

    Piccirillo, Clara

    Thermochromic materials change optical properties, such as transmittance or reflectance, with a variation in temperature. An ideal intelligent (smart) material will allow solar radiation in through a window in cold conditions, but reflect that radiation in warmer conditions. The variation in the properties is often associated with a phase change, which takes place at a definite temperature, and is normally reversible. Such materials are usually applied to window glass as thin films. This thesis presents the work on the development of thermochromic vanadium (IV) oxide (VO2) thin films - both undoped and doped with tungsten, niobium and gold nanoparticles - which could be employed as solar control coatings. The films were deposited using Chemical Vapour Deposition (CVD), using improved Atmospheric Pressure (APCVD), novel Aerosol Assisted (AACVD) and novel hybrid AP/AACVD techniques. The effects of dopants on the metalto- semiconductor transition temperature and transmittance/reflectance characteristics were also investigated. This work significantly increased the understanding of the mechanisms behind thermochromic behaviour, and resulted in thermochromic materials based on VO2 with greatly improved properties.

  20. Tribological performance of near equiatomic and Ti-rich NiTi shape memory alloy thin films

    International Nuclear Information System (INIS)

    Tillmann, Wolfgang; Momeni, Soroush

    2015-01-01

    Near equiatomic and Ti-rich NiTi shape memory alloy thin films were magnetron sputtered with the same processing parameters and thickness of 3 μm. The microstructure, composition, shape memory behavior, mechanical and tribological properties of the deposited thin films were analyzed by using X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), differential scanning calorimetry (DSC), nanoindentation, ball-on-disc, scratch test, and three dimensional (3D) optical microscopy. The obtained results clearly show how the crystallization evolution and precipitation formation of these two sets of thin films can drastically influence their mechanical and tribological performances

  1. Adsorption and co-adsorption of graphene oxide and Ni(II) on iron oxides: A spectroscopic and microscopic investigation.

    Science.gov (United States)

    Sheng, Guodong; Huang, Chengcai; Chen, Guohe; Sheng, Jiang; Ren, Xuemei; Hu, Baowei; Ma, Jingyuan; Wang, Xiangke; Huang, Yuying; Alsaedi, Ahmed; Hayat, Tasawar

    2018-02-01

    Graphene oxide (GO) may strongly interact with toxic metal ions and mineral particles upon release into the soil environment. We evaluated the mutual effects between GO and Ni (Ni(II)) with regard to their adsorption and co-adsorption on two minerals (goethite and hematite) in aqueous phase. Results indicated that GO and Ni could mutually facilitate the adsorption of each other on both goethite and hematite over a wide pH range. Addition of Ni promoted GO co-adsorption mainly due to the increased positive charge of minerals and cation-π interactions, while the presence of GO enhanced Ni co-adsorption predominantly due to neutralization of positive charge and strong interaction with oxygen-containing functional groups on adsorbed GO. Increasing adsorption of GO and Ni on minerals as they coexist may thus reduce their mobility in soil. Extended X-ray absorption fine structure (EXAFS) spectroscopy data revealed that GO altered the microstructure of Ni on minerals, i.e., Ni formed edge-sharing surface species (at R Ni-Fe ∼3.2 Å) without GO, while a GO-bridging ternary surface complexes (at R Ni-C ∼2.49 Å and R Ni-Fe ∼4.23 Å) was formed with GO. These findings improved the understanding of potential fate and toxicity of GO as well as the partitioning processes of Ni ions in aquatic and soil environments. Copyright © 2017 Elsevier Ltd. All rights reserved.

  2. Seed-mediated synthesis of cross-linked Pt-NiO nanochains for methanol oxidation

    Energy Technology Data Exchange (ETDEWEB)

    Gu, Zhulan; Bin, Duan; Feng, Yue; Zhang, Ke; Wang, Jin; Yan, Bo; Li, Shumin; Xiong, Zhiping; Wang, Caiqin; Shiraishi, Yukihide; Du, Yukou, E-mail: duyk@suda.edu.cn

    2017-07-31

    Highlights: • Cross-linked Pt-NiO nanochains using seed-mediated growth method are synthesized. • The as-prepared catalysts exhibit higher electrocatalytic activity than Pt/C for MOR. • The Pt-NiO(1:1 by molar) catalyst shows the best electrocatalytic property towards MOR. - Abstract: A simple method was reported for employing NiO nanoparticles act as seeds and then different amounts of Pt{sup 2+} were reduced on the NiO nanoparticles, forming a cross-linked Pt-NiO nanocatalysts. These as-prepared catalysts were characterized using different physical-chemical techniques, including X-ray diffraction (XRD), transmission electron microscopy (TEM) and X-ray photoelectron spectroscopy (XPS). The results indicate that the morphology of the cross-linked Pt-NiO nanochain was successfully produced regardless of the molar ratio of Pt{sup 2+} to NiO precursors. The electrochemical characteristics of Pt-NiO nanochain catalysts were evaluated for the oxidation of methanol as a model reaction, which verify that the Pt-NiO catalysts show enhanced activity and high stability in comparison with the commercial Pt/C catalyst. The optimized ratio of Pt to NiO is 1:1, then tuned by simple adjusting the feed ratio of the precursors as well. The synthesized nanocatalysts will be found the great potential applications as electrocatalysts for fuel cells owe to their enhanced catalytic performance and long-term stability.

  3. Seed-mediated synthesis of cross-linked Pt-NiO nanochains for methanol oxidation

    International Nuclear Information System (INIS)

    Gu, Zhulan; Bin, Duan; Feng, Yue; Zhang, Ke; Wang, Jin; Yan, Bo; Li, Shumin; Xiong, Zhiping; Wang, Caiqin; Shiraishi, Yukihide; Du, Yukou

    2017-01-01

    Highlights: • Cross-linked Pt-NiO nanochains using seed-mediated growth method are synthesized. • The as-prepared catalysts exhibit higher electrocatalytic activity than Pt/C for MOR. • The Pt-NiO(1:1 by molar) catalyst shows the best electrocatalytic property towards MOR. - Abstract: A simple method was reported for employing NiO nanoparticles act as seeds and then different amounts of Pt 2+ were reduced on the NiO nanoparticles, forming a cross-linked Pt-NiO nanocatalysts. These as-prepared catalysts were characterized using different physical-chemical techniques, including X-ray diffraction (XRD), transmission electron microscopy (TEM) and X-ray photoelectron spectroscopy (XPS). The results indicate that the morphology of the cross-linked Pt-NiO nanochain was successfully produced regardless of the molar ratio of Pt 2+ to NiO precursors. The electrochemical characteristics of Pt-NiO nanochain catalysts were evaluated for the oxidation of methanol as a model reaction, which verify that the Pt-NiO catalysts show enhanced activity and high stability in comparison with the commercial Pt/C catalyst. The optimized ratio of Pt to NiO is 1:1, then tuned by simple adjusting the feed ratio of the precursors as well. The synthesized nanocatalysts will be found the great potential applications as electrocatalysts for fuel cells owe to their enhanced catalytic performance and long-term stability.

  4. Ni nanoparticles decorated onto graphene oxide with SiO2 as interlayer for high performance on histidine-rich protein separation

    Science.gov (United States)

    Yang, Xiaodan; Zhang, Min; Zheng, Jing; Li, Weizhen; Gan, Wenjun; Xu, Jingli; Hayat, Tasawar; Alharbi, Njud S.; Yang, Fan

    2018-05-01

    Sandwich-like structure of graphene oxide (GO) @SiO2@C-Ni nanosheets were prepared by combining an extended stöber method with subsequent carbonization treatment, in which polydopamine was used as reducing agent and carbon source. Firstly, the GO nanosheets were covered with SiO2 interlayer and finally coated with a outer shell of nickel ion doped polydopamine (PDA-Ni2+) with an extended stöber method. Followed by a carbonization to produce the GO@SiO2@C-Ni sheets with metallic nickel nanoparticles embedded in PDA-derived thin graphic carbon layer. Notably, silica interlayer played a vital role in the formation of such GO@SiO2@C-Ni sheets. Without the protection of SiO2, the hydrophobic graphene@C-Ni composites were obtained instead. While with silica layer as the spacer, the obtained hydrophilic GO@SiO2@C-Ni composites were not only well dispersed in the solution, but also can be adjusted in terms of the size and density of Ni nanoparticles (NPs) on surface by changing the calcination temperature or the molar ratio between dopamine and nickel salt. Furthermore, nickel nanoparticles decorated on GO@SiO2 sheets were employed to enrich His-rich proteins (BHb and BSA) via specific metal affinity force between polyhistidine groups and nickel nanoparticles.

  5. The Influence of Doping with Transition Metal Ions on the Structure and Magnetic Properties of Zinc Oxide Thin Films

    Directory of Open Access Journals (Sweden)

    Jenica Neamtu

    2014-01-01

    Full Text Available Zn1−xNixO (x=0.03÷0.10 and Zn1−xFexO (x=0.03÷0.15 thin films were synthesized by sol-gel method. The structure and the surface morphology of zinc oxide thin films doped with transition metal (TM ions have been investigated by X-ray diffraction (XRD and atomic force microscopy (AFM. The magnetic studies were done using vibrating sample magnetometer (VSM at room temperature. Experimental results revealed that the substitution of Ni ions in ZnO wurtzite lattice for the contents x=0.03÷0.10 (Ni2+ leads to weak ferromagnetism of thin films. For Zn1-xFexO with x=0.03÷0.05, the Fe3+ ions are magnetic coupling by superexchange interaction via oxygen ions in wurtzite structure. For x=0.10÷0.15 (Fe3+ one can observe the increasing of secondary phase of ZnFe2O4 spinel. The Zn0.9Fe0.1O film shows a superparamagnetic behavior due to small crystallite sizes and the net spin magnetic moments arisen from the interaction between the iron ions through an oxygen ion in the spinel structure.

  6. Effect of preparation conditions on the diffusion parameters of Cu/Ni thin films

    Energy Technology Data Exchange (ETDEWEB)

    Rammo, N.N.; Makadsi, M.N. [College of Science, Baghdad University, Baghdad (Iraq); Abdul-Lettif, A.M. [College of Science, Babylon University, Hilla (Iraq)

    2004-11-01

    Diffusion coefficients of vacuum-deposited Cu/Ni bilayer thin films were determined in the temperature range 200-500 C using X-ray photoelectron spectroscopy, sheet resistance measurements, and X-ray diffraction analysis. The difference between the results of the present work and those of previous relevant investigations may be attributed to the difference in the film microstructure, which is controlled by the preparation conditions. Therefore, the effects of deposition rate, substrate temperature, film thickness, and substrate structure on the diffusion parameters were separately investigated. It is shown that the diffusion activation energy (Q) decreases as deposition rate increases, whereas Q increases as substrate temperature and film thickness increase. The value of Q for films deposited on amorphous substrates is less than that for films deposited on single-crystal substrates. (copyright 2004 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  7. Characteristics of Ti-Ni-Pd shape memory alloy thin films

    International Nuclear Information System (INIS)

    Zhang Congchun; Yang Chunsheng; Ding Duifu; Qian Shiqiang; Wu Jiansheng

    2005-01-01

    Ti-Ni-Pd thin films were deposited by RF magnetron sputtering. Microstructure and phase transformation behaviors were studied by X-ray diffraction (XRD), by transmission electron microscopy and by differential scanning calorimeter (DSC). Also tensile tests and the internal friction characteristics were examined. Annealing at 750 deg. C followed by subsequent annealing at 450 deg. C resulted in relatively homogeneous microstructure and uniform martensite/austenite transformation. The results from DSC showed clearly the martensitic transformation upon heating and cooling, the transformation temperatures are 112 deg. C (M* peak) and 91 deg. C (M peak), respectively. The transformation characteristics are also found in strain-temperature curves and internal friction-temperature curves. The film had shape memory effect. The frequency had no effect on the modulus, but the internal friction decreased with increasing frequency

  8. Surface and magnetic characteristics of Ni-Mn-Ga/Si (100) thin film

    Energy Technology Data Exchange (ETDEWEB)

    Kumar, S. Vinodh; Pandyan, R. Kodi; Mahendran, M., E-mail: manickam-mahendran@tce.edu, E-mail: perialangulam@gmail.com [Smart Materials Lab, Department of Physics, Thiagarajar College of Engineering, Madurai – 625 015 (India); Raja, M. Manivel [Defence Metallurgical Research Laboratory, Hyderabad – 500 058 (India); Pandi, R. Senthur [School of Advanced Sciences, VIT University, Vellore – 632 014 (India)

    2016-05-23

    Polycrystalline Ni-Mn-Ga thin films have been deposited on Si (100) substrate with different film thickness. The influence of film thickness on the phase structure and magnetic domain of the films has been examined by scanning electron microscope, atomic force microscopy and magnetic force microscopy. Analysis of structural parameters indicates that the film at lower thickness exhibits the coexistence of both austenite and martensite phase, whereas at higher thickness L1{sub 2} cubic non magnetic phase is noticed. The grains size and the surface roughness increase along with the film thickness and attain the maximum of 45 nm and 34.96 nm, respectively. At lower film thickness, the magnetic stripe domain is found like maze pattern with dark and bright images, while at higher thickness the absence of stripe domains is observed. The magnetic results reveal that the films strongly depend on their phase structure and microstructure which influence by the film thickness.

  9. Plasma dynamics study by fast imaging and Sm1-xNdxNiO3 thin film deposition

    International Nuclear Information System (INIS)

    Lafane, S.; Kerdja, T.; Abdelli-Messaci, S.; Malek, S.; Maaza, M.

    2009-01-01

    The plume expansion dynamics of an ablated target of Sm 2 O 3 , Nd 2 O 3 and NiO mixture oxides by KrF laser into 0.2 mbar oxygen atmosphere has been investigated using fast imaging. The study was carried out for two different laser fluences 2 and 3 J cm -2 . It was found that at early time delays, the expansion is still linear, independently of the laser fluence. However, as time evolves, the plume is decelerated and comes to rest. The plasma plume dynamics was analysed in the framework of Predtechensky and Mayorov model and drag model. It was found that Predtechensky and Mayorov model gives a general description of the plume expansion. However, at later time delays, it is rather the drag model which is valid. Furthermore, under the same conditions of pressure and fluences used for the plasma study, thin films were deposited at 4 cm from target surface and at temperature of 500 deg. C on (1 0 0) silicon substrates. The obtained layers were characterized by atomic force microscopy and electron dispersive X-ray spectroscopy diagnostics. A correlation between the films properties and the plasma plume dynamics was found.

  10. Thin copper oxide films prepared by ion beam sputtering with subsequent thermal oxidation: Application in chemiresistors

    Energy Technology Data Exchange (ETDEWEB)

    Horak, P., E-mail: phorak@ujf.cas.cz [Nuclear Physics Institute, Academy of Sciences of the Czech Republic, 250 68 Řež (Czech Republic); Bejsovec, V.; Vacik, J.; Lavrentiev, V. [Nuclear Physics Institute, Academy of Sciences of the Czech Republic, 250 68 Řež (Czech Republic); Vrnata, M. [Department of Physics and Measurements, The University of Chemistry and Technology, Prague, Technická 5, 166 28 Prague 6 (Czech Republic); Kormunda, M. [Department of Physics, Jan Evangelista Purkyně University in Ústí nad Labem, České mládeže 8, 400 96 Ústí nad Labem (Czech Republic); Danis, S. [Department of Condensed Matter Physics, Faculty of Mathematics and Physics, Charles University in Prague, Ke Karlovu 5, 121 16 Prague 2 (Czech Republic)

    2016-12-15

    Highlights: • A rapid oxidation process of thin copper films. • Sheet resistance up to 10{sup 9} Ω/◊. • Mixed oxide phase at 200 °C with significant hydroxide presence. • Gas sensing response to 1000 ppm of hydrogen and methanol vapours. • Increased sensitivity with Pd and Au catalyst to hydrogen and methanol, respectively. - Abstract: Copper oxide films were prepared by thermal oxidation of thin Cu films deposited on substrates by ion beam sputtering. The subsequent oxidation was achieved in the temperature range of 200 °C–600 °C with time of treatment from 1 to 7 h (with a 1-h step) in a furnace open to air. At temperatures 250 °C–600 °C, the dominant phase formed was CuO, while at 200 °C mainly the Cu{sub 2}O phase was identified. However, the oxidation at 200 °C led to a more complicated composition − in the depth Cu{sub 2}O phase was observed, though in the near-surface layer the CuO dominant phase was found with a significant presence of Cu(OH){sub 2}. A limited amount of Cu{sub 2}O was also found in samples annealed at 600 °C. The sheet resistance R{sub S} of the as-deposited Cu sample was 2.22 Ω/□, after gradual annealing R{sub S} was measured in the range 2.64 MΩ/□–2.45 GΩ/□. The highest R{sub S} values were obtained after annealing at 300 °C and 350 °C, respectively. Oxygen depth distribution was studied using the {sup 16}O(α,α) nuclear reaction with the resonance at energy 3032 keV. It was confirmed that the higher oxidation degree of copper is located in the near-surface region. Preliminary tests of the copper oxide films as an active layer of a chemiresistor were also performed. Hydrogen and methanol vapours, with a concentration of 1000 ppm, were detected by the sensor at an operating temperature of 300 °C and 350 °C, respectively. The response of the sensors, pointed at the p-type conductivity, was improved by the addition of thin Pd or Au catalytic films to the oxidic film surface. Pd-covered films showed

  11. A Study of Thin Film Resistors Prepared Using Ni-Cr-Si-Al-Ta High Entropy Alloy

    Directory of Open Access Journals (Sweden)

    Ruei-Cheng Lin

    2015-01-01

    Full Text Available Ni-Cr-Si-Al-Ta resistive thin films were prepared on glass and Al2O3 substrates by DC magnetron cosputtering from targets of Ni0.35-Cr0.25-Si0.2-Al0.2 casting alloy and Ta metal. Electrical properties and microstructures of Ni-Cr-Si-Al-Ta films under different sputtering powers and annealing temperatures were investigated. The phase evolution, microstructure, and composition of Ni-Cr-Si-Al-Ta films were characterized by X-ray diffraction (XRD, transmission electron microscopy (TEM, and Auger electron spectroscopy (AES. When the annealing temperature was set to 300°C, the Ni-Cr-Si-Al-Ta films with an amorphous structure were observed. When the annealing temperature was at 500°C, the Ni-Cr-Si-Al-Ta films crystallized into Al0.9Ni4.22, Cr2Ta, and Ta5Si3 phases. The Ni-Cr-Si-Al-Ta films deposited at 100 W and annealed at 300°C which exhibited the higher resistivity 2215 μΩ-cm with −10 ppm/°C of temperature coefficient of resistance (TCR.

  12. Effect of nickel oxide seed layers on annealed-amorphous titanium oxide thin films prepared using plasma-enhanced chemical vapor deposition

    International Nuclear Information System (INIS)

    Wu, Cheng-Yang; Hong, Shao-Chyang; Hwang, Fu-Tsai; Lai, Li-Wen; Lin, Tan-Wei; Liu, Day-Shan

    2011-01-01

    The effect of a nickel oxide (NiO x ) seed layer on the crystallization and photocatalytic activity of the sequentially plasma-enhanced chemical vapor deposited amorphous titanium oxide (TiO x ) thin film processed by a post-annealing process was investigated. The evolution of the crystalline structures, chemical bond configurations, and surface/cross-sectional morphologies of the annealed TiO x films, with and without a NiO x seed layer, was examined using X-ray diffractometer, Fourier transform infrared spectrometry, X-ray photoelectron spectroscopy, atomic force microscopy, and field emission scanning electron microscope measurements. Thermo- and photo-induced hydrophilicity was determined by measuring the contact angle of water droplet. Photocatalytic activity after UV light irradiation was evaluated from the decolorization of a methylene blue solution. The crystallization temperature of the TiO x film, deposited on a NiO x seed layer, was found to be lower than that of a pure TiO x film, further improving the thermo- and photo-induced surface super-hydrophilicity. The TiO x film deposited onto the NiO x seed layer, resulting in significant cluster boundaries, showed a rough surface morphology and proved to alleviate the anatase crystal growth by increasing the post-annealing temperature, which yielded a more active surface area and prohibited the recombination of photogenerated electrons and holes. The photocatalytic activity of the NiO x /TiO x system with such a textured surface therefore was enhanced and optimized through an adequate post-annealing process.

  13. Effect of nickel oxide seed layers on annealed-amorphous titanium oxide thin films prepared using plasma-enhanced chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Wu, Cheng-Yang; Hong, Shao-Chyang [Institute of Electro-Optical and Materials Science, National Formosa University, Huwei, Yunlin, 63201, Taiwan (China); Hwang, Fu-Tsai [Department of Electro-Optical Engineering, National United University, Miao-Li, 36003, Taiwan (China); Lai, Li-Wen [ITRI South, Industrial Technology Research Institute, Liujia, Tainan, 73445, Taiwan (China); Lin, Tan-Wei [Institute of Electro-Optical and Materials Science, National Formosa University, Huwei, Yunlin, 63201, Taiwan (China); Liu, Day-Shan, E-mail: dsliu@sunws.nfu.edu.tw [Institute of Electro-Optical and Materials Science, National Formosa University, Huwei, Yunlin, 63201, Taiwan (China)

    2011-10-31

    The effect of a nickel oxide (NiO{sub x}) seed layer on the crystallization and photocatalytic activity of the sequentially plasma-enhanced chemical vapor deposited amorphous titanium oxide (TiO{sub x}) thin film processed by a post-annealing process was investigated. The evolution of the crystalline structures, chemical bond configurations, and surface/cross-sectional morphologies of the annealed TiO{sub x} films, with and without a NiO{sub x} seed layer, was examined using X-ray diffractometer, Fourier transform infrared spectrometry, X-ray photoelectron spectroscopy, atomic force microscopy, and field emission scanning electron microscope measurements. Thermo- and photo-induced hydrophilicity was determined by measuring the contact angle of water droplet. Photocatalytic activity after UV light irradiation was evaluated from the decolorization of a methylene blue solution. The crystallization temperature of the TiO{sub x} film, deposited on a NiO{sub x} seed layer, was found to be lower than that of a pure TiO{sub x} film, further improving the thermo- and photo-induced surface super-hydrophilicity. The TiO{sub x} film deposited onto the NiO{sub x} seed layer, resulting in significant cluster boundaries, showed a rough surface morphology and proved to alleviate the anatase crystal growth by increasing the post-annealing temperature, which yielded a more active surface area and prohibited the recombination of photogenerated electrons and holes. The photocatalytic activity of the NiO{sub x}/TiO{sub x} system with such a textured surface therefore was enhanced and optimized through an adequate post-annealing process.

  14. Amperometric detection and electrochemical oxidation of aliphatic amines and ammonia on silver-lead oxide thin-film electrodes

    Energy Technology Data Exchange (ETDEWEB)

    Ge, Jisheng [Iowa State Univ., Ames, IA (United States)

    1996-01-08

    This thesis comprises three parts: Electrocatalysis of anodic oxygen-transfer reactions: aliphatic amines at mixed Ag-Pb oxide thin-film electrodes; oxidation of ammonia at anodized Ag-Pb eutectic alloy electrodes; and temperature effects on oxidation of ethylamine, alanine, and aquated ammonia.

  15. Growth and thermal oxidation of Ru and ZrO2 thin films as oxidation protective layers

    NARCIS (Netherlands)

    Coloma Ribera, R.

    2017-01-01

    This thesis focuses on the study of physical and chemical processes occurring during growth and thermal oxidation of Ru and ZrO2 thin films. Acting as oxidation resistant capping materials to prevent oxidation of layers underneath, these films have several applications, i.e., in microelectronics

  16. Role of oxides and porosity on high temperature oxidation of liquid fuelled HVOF thermal sprayed Ni50Cr coatings

    OpenAIRE

    Song, B.; Bai, M.; Voisey, K.T.; Hussain, Tanvir

    2017-01-01

    High chromium content in Ni50Cr thermally sprayed coatings can generate a dense and protective scale at the surface of coating. Thus, the Ni50Cr coating is widely used in high temperature oxidation and corrosion applications. A commercially available gas atomized Ni50Cr powder was sprayed onto a power plant steel (ASME P92) using a liquid fuelled high velocity oxy-fuel (HVOF) thermal spray with three processing parameters in this study. Microstructure of as-sprayed coatings was examined using...

  17. Electronic Structure Control of Tungsten Oxide Activated by Ni for Ultrahigh-Performance Supercapacitors.

    Science.gov (United States)

    Meng, Tian; Kou, Zongkui; Amiinu, Ibrahim Saana; Hong, Xufeng; Li, Qingwei; Tang, Yongfu; Zhao, Yufeng; Liu, Shaojun; Mai, Liqiang; Mu, Shichun

    2018-04-17

    Tuning the electron structure is of vital importance for designing high active electrode materials. Here, for boosting the capacitive performance of tungsten oxide, an atomic scale engineering approach to optimize the electronic structure of tungsten oxide by Ni doping is reported. Density functional theory calculations disclose that through Ni doping, the density of state at Fermi level for tungsten oxide can be enhanced, thus promoting its electron transfer. When used as electrode of supercapacitors, the obtained Ni-doped tungsten oxide with 4.21 at% Ni exhibits an ultrahigh mass-specific capacitance of 557 F g -1 at the current density of 1 A g -1 and preferable durability in a long-term cycle test. To the best of knowledge, this is the highest supercapacitor performance reported so far in tungsten oxide and its composites. The present strategy demonstrates the validity of the electronic structure control in tungsten oxide via introducing Ni atoms for pseudocapacitors, which can be extended to other related fields as well. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  18. Effect of surface oxidation on thermomechanical behavior of NiTi shape memory alloy wire

    Science.gov (United States)

    Ng, Ching Wei; Mahmud, Abdus Samad

    2017-12-01

    Nickel titanium (NiTi) alloy is a unique alloy that exhibits special behavior that recovers fully its shape after being deformed to beyond elastic region. However, this alloy is sensitive to any changes of its composition and introduction of inclusion in its matrix. Heat treatment of NiTi shape memory alloy to above 600 °C leads to the formation of the titanium oxide (TiO2) layer. Titanium oxide is a ceramic material that does not exhibit shape memory behaviors and possess different mechanical properties than that of NiTi alloy, thus disturbs the shape memory behavior of the alloy. In this work, the effect of formation of TiO2 surface oxide layer towards the thermal phase transformation and stress-induced deformation behaviors of the NiTi alloy were studied. The NiTi wire with composition of Ti-50.6 at% Ni was subjected to thermal oxidation at 600 °C to 900 °C for 30 and 60 minutes. The formation of the surface oxide layers was characterized by using the Scanning Electron Microscope (SEM). The effect of surface oxide layers with different thickness towards the thermal phase transformation behavior was studied by using the Differential Scanning Calorimeter (DSC). The effect of surface oxidation towards the stress-induced deformation behavior was studied through the tensile deformation test. The stress-induced deformation behavior and the shape memory recovery of the NiTi wire under tensile deformation were found to be affected marginally by the formation of thick TiO2 layer.

  19. Solute transport during the cyclic oxidation of Ni-Cr-Al alloys. M.S. Thesis

    Science.gov (United States)

    Nesbitt, J. A.

    1982-01-01

    Important requirements for protective coatings of Ni-Cr-Al alloys for gas turbine superalloys are resistance to oxidation accompanied by thermal cycling, resistance to thermal fatigue cracking. The resistance to oxidation accompanied by thermal cycling is discussed. The resistance to thermal fatigue cracking is also considered.

  20. Temperature dependence of magnetic properties of Cu80Co19Ni1 thin microwires

    International Nuclear Information System (INIS)

    Garcia, C.; Zhukov, A.; Zhukova, V.; Larin, V.; Gonzalez, J.; Val, J.J. del; Knobel, M.

    2007-01-01

    In the present work, we report the studies of temperature dependence of magnetic properties in thin microwires with composition Cu 80 Co 19 Ni 1 . An extensive study of structural and magnetic characterization was realized. The structure was observed using X-ray diffraction with CuK α radiation. The magnetic measurements were carried out using a SQUID at temperatures between 5 and 300 K. The as-prepared Cu 80 Co 19 Ni 1 microwire presents a coercivity of about 80 Oe. The variation of the coercivity and remanent magnetization at 5-300 K were obtained from the hysteresis loops. From the difference of the ZFC and FC curves below T=100 K, we can assume the presence of small superparamagnetic grains embedded in the Cu matrix. Those superparamagnetic grains should be blocked at temperatures below the maximum of the magnetization observed below 50 K. The measurements show an unusual temperature dependence of the coercive field, consequence of a coexistence of blocked and unblocked particles, and the typical decreasing behaviour of the remanence increasing temperature

  1. Opto-electrical energy conversion by thin electrolytic CdSe films on Ni substrates

    International Nuclear Information System (INIS)

    Glenis, G X; Athanassopoulou, M D; Argyropoulos, Th G; Dervos, C T

    2015-01-01

    Thin-films (300 nm) of zinc-blende (cubic structure) CdSe (111) electrolytically deposited on nickel substrates had their surface characteristics investigated by XRD, SEM, and profilometry scans. A metal-CdSe-metal structure was formed by positioning a Au electrode on top of CdSe and the I–V characteristics of the resulting device were investigated in the dark and under low intensities (≤0.2 mW cm −2 ) of diffused solar radiation. The experimental results show that the illuminated structure is an active device that produces electric power in the 2nd quadrant of the I–V curve. This response may be related to the Ni-to-CdSe interface, where carriers are effectively generated as a result of deep energy level formations, spatially confined in the interfacial region of the depletion layer width of the Ni-CdSe junction. A potential energy diagram is proposed to present the spatially and energetically confined deep-level parameters, the operation principles (carrier generation and transport processes) across the structure and link them to the obtained I–V response. A mathematical modeling based on the Schokley-Read-Hall recombination theory confirms the experimentally obtained current profiles of illuminated junctions. Such opto-electrical tranducers might be implemented in multilayer photovoltaic hetero-structures to enhance their conversion efficiencies and reduce their operating temperatures. (paper)

  2. Opto-electrical energy conversion by thin electrolytic CdSe films on Ni substrates

    Science.gov (United States)

    Glenis, G. X.; Athanassopoulou, M. D.; Argyropoulos, Th G.; Dervos, C. T.

    2015-02-01

    Thin-films (300 nm) of zinc-blende (cubic structure) CdSe (111) electrolytically deposited on nickel substrates had their surface characteristics investigated by XRD, SEM, and profilometry scans. A metal-CdSe-metal structure was formed by positioning a Au electrode on top of CdSe and the I-V characteristics of the resulting device were investigated in the dark and under low intensities (≤0.2 mW cm-2) of diffused solar radiation. The experimental results show that the illuminated structure is an active device that produces electric power in the 2nd quadrant of the I-V curve. This response may be related to the Ni-to-CdSe interface, where carriers are effectively generated as a result of deep energy level formations, spatially confined in the interfacial region of the depletion layer width of the Ni-CdSe junction. A potential energy diagram is proposed to present the spatially and energetically confined deep-level parameters, the operation principles (carrier generation and transport processes) across the structure and link them to the obtained I-V response. A mathematical modeling based on the Schokley-Read-Hall recombination theory confirms the experimentally obtained current profiles of illuminated junctions. Such opto-electrical tranducers might be implemented in multilayer photovoltaic hetero-structures to enhance their conversion efficiencies and reduce their operating temperatures.

  3. Thermochromic effect in NdNiO{sub 3-{delta}} thin films annealed in ambient air

    Energy Technology Data Exchange (ETDEWEB)

    Capon, F; Horwat, D; Pierson, J F [Institut Jean Lamour, Departement CP2S, (UMR CNRS 7198), Ecole des Mines, Parc de Saurupt, CS 14234, 54042 Nancy Cedex (France); Zaghrioui, M; Laffez, P, E-mail: fabien.capon@mines.inpl-nancy.f [Universite de Tours, IUT de Blois, Laboratoire d' Electrodynamique des Materiaux Avances, UMR CNRS CEA 6187, Place Jean Jaures, 41029 Blois cedex (France)

    2009-09-21

    The synthesis of NdNiO{sub 3} perovskite structure was achieved by soft post deposition annealing of initially amorphous thin films reactively sputter deposited on silicon substrates. The physical measurements were fully consistent with the properties expected for the thermochromic NdNiO{sub 3} phase. Upon heating, the optical transmission that was correlated with the electrical properties decreased in the infrared domain showing a thermochromic effect in this optical region. The metal-insulator transition temperature was found to be -68 {sup 0}C for the specimen tested and the jump in resistance at the transition was 1.4 orders of magnitude. The state-of-the-art methods that normally involve an annealing at a high oxygen pressure (200 x 10{sup 5} Pa) or epitaxial stabilization were considerably improved in this work by the use of dc sputtering and the optimization of the deposition conditions. Therefore, the novel soft process proposed here opens up numerous research possibilities. (fast track communication)

  4. Ti:Pt:Au:Ni thin-film CVD diamond sensor ability for charged particle detection.

    Science.gov (United States)

    Kasiwattanawut, Haruetai; Tchouaso, Modeste Tchakoua; Prelas, Mark A

    2018-05-22

    This work demonstrates the development of diamond sensors with reliable contacts using a new metallization formula, which can operate under high-pressure gas environment. The metallization was created using thin film layers of titanium, platinum, gold and nickel deposited on a single crystal electronic grade CVD diamond chip. The contacts were 2 mm in diameter with thickness of 50/5/20/150 nm of Ti:Pt:Au:Ni. The optimum operating voltage of the sensor was determined from the current-voltage measurements. The sensor was calibrated with 239 Pu and 241 Am alpha radiation sources at 300 V. The energy resolution of the Ti:Pt:Au:Ni diamond sensor was determined to be 7.6% at 5.2 MeV of 239 Pu and 2.2% at 5.48 MeV of 241 Am. The high-pressure gas loading environment under which this sensor was used is discussed. Specifically, experimental observations are described using hydrogen loading of nickel as a means of initiating low energy nuclear reactions. No neutrons, electrons, ions or other ionizing radiations were observed in these experiments. Copyright © 2018 Elsevier Ltd. All rights reserved.

  5. Structural and magnetic characterization of martensitic Ni-Mn-Ga thin films deposited on Mo foil

    International Nuclear Information System (INIS)

    Chernenko, V.A.; Anton, R. Lopez; Kohl, M.; Barandiaran, J.M.; Ohtsuka, M.; Orue, I.; Besseghini, S.

    2006-01-01

    Three martensitic Ni 51.4 Mn 28.3 Ga 20.3 thin films sputter-deposited on a Mo foil were investigated with regard to their crystal and magnetic domain structures, as well as their magnetic and magnetostrain properties. The film thicknesses, d, were 0.1, 0.4 and 1.0μm. X-ray and electron diffraction patterns revealed a tetragonal modulated martensitic phase (10M) in the films. The surface topography and micromagnetic structure were studied by scanning probe microscopy. A maze magnetic domain structure featuring a large out-of-plane magnetization component was found in all films. The domain width, δ, depends on the film thickness as δ∼d. The thickness dependencies of the saturation magnetization, saturation magnetic field and magnetic anisotropy were clarified. Beam cantilever tests on the Ni-Mn-Ga/Mo composite as a function of magnetic field showed reversible strains, which are larger than ordinary magnetostriction

  6. Self-aligned periodic Ni nano dots embedded in nano-oxide layer

    International Nuclear Information System (INIS)

    Doi, M.; Izumi, M.; Kawasaki, S.; Miyake, K.; Sahashi, M.

    2007-01-01

    The Ni nano constriction dots embedded in the Ta-nano-oxide layer (NOL) was prepared by the ion beam sputtering (IBS) method. After the various conditions of the oxidations, the structural analyses of the NOL were performed by RHEED, AES and in situ STM/AFM observations. From the current image of the conductive AFM for NOL, the periodically aligned metallic dots with the size around 5-10 nm were successfully observed. The mechanism of the formation of the self-organized aligned Ni nano constriction dots is discussed from the standpoint of the grain size, the crystal orientation, the preferred oxidation of Ta at the diffused interface

  7. Bilayered Oxide thin films for transparent electrode application

    Science.gov (United States)

    Dutta, Titas; Narayan, Jagdish

    2008-10-01

    Ga doped ZnO films with electrical and optical properties comparable to indium tin oxide (ITO) is a promising candidate for transparent conducting oxides (TCOs) because of its superior stability in hydrogen environment, benign nature and relatively inexpensive supply. However, ZnO based TCO films suffer from low work function, which is a critical parameter for device applications. We report here the growth of a novel bilayered structure consisting of very thin (few monolayers) ITO, MoOx layer on Zn0.95Ga0.05O film for transparent electrode applications by using pulsed laser deposition technique at different temperatures and oxygen partial pressure. The characteristics of the ITO film and the heterostructure have been investigated in detail using XRD, TEM, XPS, and electrical and optical property measurements. It is envisaged that the overall transmittance and the resistivity are dictated by the thicker layer of ZnGa0.05O beneath the ITO layer. Hence, this study is aimed to improve the surface characteristics without affecting the overall transmittance and sheet resistance. This will enhance the transport of the carriers across the heterojunction in the device, thus, resulting in the increase in device efficiency.

  8. High photocurrent gain in NiO thin film/M-doped ZnO nanorods (M=Ag, Cd and Ni) heterojunction based ultraviolet photodiodes

    Energy Technology Data Exchange (ETDEWEB)

    Echresh, Ahmad, E-mail: ahmadechresh@gmail.com [Department of Science and Technology, Physical Electronics and Nanotechnology Division, Campus Norrköping, Linköping University, SE-601 74 Norrköping (Sweden); Echresh, Mohammad [Department of Physics, Sanati Hoveizeh University, Ahvaz (Iran, Islamic Republic of); Khranovskyy, Volodymyr [Department of Physics, Chemistry and Biology (IFM), Linköping University, SE-5818358183 Linköping (Sweden); Nur, Omer; Willander, Magnus [Department of Science and Technology, Physical Electronics and Nanotechnology Division, Campus Norrköping, Linköping University, SE-601 74 Norrköping (Sweden)

    2016-10-15

    The thermal evaporation method has been used to deposit p-type NiO thin film, which was combined with hydrothermally grown n-type pure and M-doped ZnO nanorods (M=Ag, Cd and Ni) to fabricate a high performance p-n heterojunction ultraviolet photodiodes. The fabricated photodiodes show high rectification ratio and relatively low leakage current. The p-NiO/n-Zn{sub 0.94}Ag{sub 0.06}O heterojunction photodiode displays the highest photocurrent gain (~1.52×10{sup 4}), a photoresponsivity of ~4.48×10{sup 3} AW{sup −1} and a photosensitivity of ~13.56 compared with the other fabricated photodiodes. The predominated transport mechanisms of the p-n heterojunction ultraviolet photodiodes at low and high applied forward bias may be recombination-tunneling and space charge limited current, respectively.

  9. Effect of aging treatment on the in vitro nickel release from porous oxide layers on NiTi

    Energy Technology Data Exchange (ETDEWEB)

    Huan, Z.; Fratila-Apachitei, L.E., E-mail: e.l.fratila-apachitei@tudelft.nl; Apachitei, I.; Duszczyk, J.

    2013-06-01

    Despite the ability of creating porous oxide layers on nickel–titanium alloy (NiTi) surface for biofunctionalization, the use of plasma electrolytic oxidation (PEO) has raised concerns over the possible increased levels of Ni release. Therefore, the primary aim of this study was to investigate the effect of aging in boiling water on Ni release from porous NiTi surfaces that have been formed by the PEO process. Based on different oxidation conditions, e.g. electrolyte composition and electrical parameters, three kinds of oxide layers with various characteristics were prepared on NiTi substrate. The process was followed by aging in boiling water for different durations. The Ni release was assessed by immersion tests in phosphate buffer saline and the Ni concentration was measured using the flame atomic absorption spectrometry. The results showed that aging in boiling water can significantly reduce the Ni release from oxidized porous samples, given that the duration of the treatment is finely adjusted according to the parameters of the as-formed oxide layer. Surface examination of the samples before and after aging in boiling water suggested that such a treatment is non-destructive while improving the corrosion resistance of oxidized samples, as evidenced by potentiodynamic polarization tests. The results of this study indicate that water boiling may be a suitable post-treatment required to minimize Ni release from porous oxides produced on NiTi by PEO for biomedical applications.

  10. Nanosized Ni-Mn Oxides Prepared by the Citrate Gel Process and Performances for Electrochemical Capacitors

    Institute of Scientific and Technical Information of China (English)

    Jianxin ZHOU; Xiangqian SHEN; Maoxiang JING

    2006-01-01

    Nanosized Ni-Mn oxide powders have been successfully prepared by thermal decomposition of the Ni-Mn citrate gel precursors. The powder materials derived from calcination of the gel precursors with various molar ratios of nickel and manganese at different temperatures and time were characterized using thermal analysis (TG-DSC), scanning electron microscopy (SEM), X-ray diffraction (XRD) and Brunauer-Emmet-Teller (BET).The optimized processing conditions of calcination at 400℃ for 1 h with Ni/Mn molar ratio 6 were proved to produce the nanosized Ni-Mn oxide powders with a high specific surface area of 109.62 m2/g and nanometer particle sizes of 15~30 nm. The capacitance characteristics of the nanosized Ni-Mn oxide electrode in various concentrations of KOH solutions were studied by the cyclic voltammetry (CV) and exhibited both a doublelayer capacitance and a Faradaic capacitance which could be attributed to the electrode consisting of Ni-Mn oxides and residual carbons from the organic gel thermal decomposition. A specific capacitance of 194.8 F/g was obtained for the electrode at the sweep rate of 10 mV/s in 4 mol/L KOH electrolyte and the capacitor showed quite high cyclic stability and is promising for advanced electrochemical capacitors.

  11. Copper and CuNi alloys substrates for HTS coated conductor applications protected from oxidation

    Energy Technology Data Exchange (ETDEWEB)

    Segarra, M; Diaz, J; Xuriguera, H; Chimenos, J M; Espiell, F [Dept. of Chemical Engineering and Metallurgy, Univ. of Barcelona, Barcelona (Spain); Miralles, L [Lab. d' Investigacio en Formacions Geologiques. Dept. of Petrology, Geochemistry and Geological Prospecting, Univ. of Barcelona, Barcelona (Spain); Pinol, S [Inst. de Ciencia de Materials de Barcelona, Bellaterra (Spain)

    2003-07-01

    Copper is an interesting substrate for HTS coated conductors for its low cost compared to other metallic substrates, and for its low resistivity. Nevertheless, mechanical properties and resistance to oxidation should be improved in order to use it as substrate for YBCO deposition by non-vacuum techniques. Therefore, different cube textured CuNi tapes were prepared by RABIT as possible substrates for deposition of high critical current density YBCO films. Under the optimised conditions of deformation and annealing, all the studied CuNi alloys (2%, 5%, and 10% Ni) presented (100) left angle 001 right angle cube texture which is compatible for YBCO deposition. Textured CuNi alloys present higher tensile strength than pure copper. Oxidation resistance of CuNi tapes under different oxygen atmospheres was also studied by thermogravimetric analysis and compared to pure copper tapes. Although the presence of nickel improves mechanical properties of annealed copper, it does not improve its oxidation resistance. However, when a chromium buffer layer is electrodeposited on the tape, oxygen diffusion is slowed down. Chromium is, therefore, useful for protecting copper and CuNi alloys from oxidation although its recrystallisation texture, (110), is not suitable for coated conductors. (orig.)

  12. Ir-Ni oxide as a promising material for nerve and brain stimulating electrodes

    Directory of Open Access Journals (Sweden)

    Joan Stilling

    2014-09-01

    Full Text Available Tremendous potential for successful medical device development lies in both electrical stimulation therapies and neuronal prosthetic devices, which can be utilized in an extensive number of neurological disorders. These technologies rely on the successful electrical stimulation of biological tissue (i.e. neurons through the use of electrodes. However, this technology faces the principal problem of poor stimulus selectivity due to the currently available electrode’s large size relative to its targeted population of neurons. Irreversible damage to both the stimulated tissue and electrode are limiting factors in miniaturization of this technology, as charge density increases with decreasing electrode size. In an attempt to find an equilibrium between these two opposing constraints (electrode size and charge density, the objective of this work was to develop a novel iridium-nickel oxide (Ir0.2-Ni0.8-oxide coating that could intrinsically offer high charge storage capacity. Thermal decomposition was used to fabricate titanium oxide, iridium oxide, nickel oxide, and bimetallic iridium-nickel oxide coatings on titanium electrode substrates. The Ir0.2-Ni0.8-oxide coating yielded the highest intrinsic (material property and extrinsic (material property + surface area charge storage capacity (CSC among the investigated materials, exceeding the performance of the current state-of-the-art neural stimulating electrode, Ir-oxide. This indicates that the Ir0.2-Ni0.8-oxide material is a promising alternative to currently used Ir-oxide, Pt, Au and carbon-based stimulating electrodes.

  13. Rapid thermal annealing of Ti-rich TiNi thin films: A new approach to fabricate patterned shape memory thin films

    International Nuclear Information System (INIS)

    Motemani, Y.; Tan, M.J.; White, T.J.; Huang, W.M.

    2011-01-01

    This paper reports the rapid thermal annealing (RTA) of Ti-rich TiNi thin films, synthesized by the co-sputtering of TiNi and Ti targets. Long-range order of aperiodic alloy could be achieved in a few seconds with the optimum temperature of 773 K. Longer annealing (773 K/240 s), transformed the film to a poorly ordered vitreous phase, suggesting a novel method for solid state amorphization. Reitveld refinement analyses showed significant differences in structural parameters of the films crystallized by rapid and conventional thermal annealing. Dependence of the elastic modulus on the valence electron density (VED) of the crystallized films was studied. It is suggested that RTA provides a new approach to fabricate patterned shape memory thin films.

  14. One-pot fabrication of NiFe2O4 nanoparticles on α-Ni(OH)2 nanosheet for enhanced water oxidation

    Science.gov (United States)

    Chen, Hong; Yan, Junqing; Wu, Huan; Zhang, Yunxia; Liu, Shengzhong (Frank)

    2016-08-01

    Water splitting has been intensively investigated as a promising solution to resolve the future environmental and energy crises. The oxygen evolution reaction (OER) of the photo- and electric field-induced water splitting limits the development of other reactions, including hydrogen evolution reaction (HER). Fe, Ni and NiFe (hydro) oxide-based catalysts are generally acknowledged among the best candidates of OER catalysts for water splitting. Herein, we developed a one-pot simple hydrothermal process to assemble NiFe2O4 nanoparticles onto the α-Ni(OH)2 nanosheets. The first formed NiFe2O4 under high temperature and pressure environment induces and assists the α-Ni(OH)2 formation without any further additives, because the distance between the neighboring Ni atoms in the cubic NiFe2O4 is similar to that in the α-Ni(OH)2 {003} facets. We have synthesized a series of NiFe2O4/α-Ni(OH)2 compounds and find that the overpotential decreases with the increase of Ni(OH)2 content while the OER kinetics stays unchanged, suggesting that Ni(OH)2 plays a major role in overpotential while NiFe2O4 mainly affects the OER kinetics. The obtained NiFe2O4/α-Ni(OH)2 compounds is also found to be a promising co-catalyst for the photocatalytic water oxidation. In fact, it is even more active than the noble PtOx with acceptable stability for the oxygen generation.

  15. Metal oxides modified NiO catalysts for oxidative dehydrogenation of ethane to ethylene

    KAUST Repository

    Zhu, Haibo; Dong, Hailin; Laveille, Paco; Saih, Youssef; Caps, Valerie; Basset, Jean-Marie

    2014-01-01

    in contrast to pure NiO. The introduction of group IV, V and VI transition metals into NiO decreases the catalytic activity in ethane ODH. However, the ethylene selectivity is enhanced with the highest level for the Ni-W-O and Ni-Ti-O catalysts. As a result

  16. YSZ thin films deposited on NiO-CSZ anodes by pulsed injection MOCVD for intermediate temperature-SOFC applications

    International Nuclear Information System (INIS)

    Garcia, G.; Pardo, J.A.; Santiso, J.; Merino, R.I.; Orera, V.M.; Larrea, A.; Pena, J.I.; Laguna-Bercero, M.A.; Figueras, A.

    2004-01-01

    Yttria-stabilized zirconia (YSZ) films are prepared on NiO-CaSZ by PIMOCVD (pulsed injection metal organic chemical vapor deposition). High quality, 5 to 10 μm thick, totally dense YSZ layers are prepared by controlling the oxygen partial pressure during the deposition. YSZ solid electrolyte deposition onto Ni-YSZ eutectic substrate is found to be a promising combination with regard to intermediate-temperature solid-oxide fuel cell applications. (Abstract Copyright [2004], Wiley Periodicals, Inc.)

  17. Porous Ni-Co-Mn oxides prisms for high performance electrochemical energy storage

    Science.gov (United States)

    Zhao, Jianbo; Li, Man; Li, Junru; Wei, Chengzhen; He, Yuyue; Huang, Yixuan; Li, Qiaoling

    2017-12-01

    Porous Ni-Co-Mn oxides prisms have been successfully synthesized via a facile route. The process involves the preparation of nickel-cobalt-manganese acetate hydroxide by a simple co-precipitation method and subsequently the thermal treatment. The as-synthesized Ni-Co-Mn oxides prisms had a large surface area (96.53 m2 g-1) and porous structure. As electrode materials for supercapacitors, porous Ni-Co-Mn oxides prisms showed a high specific capacitance of 1623.5 F g-1 at 1.0 A g-1. Moreover, the porous Ni-Co-Mn oxides prisms were also employed as positive electrode materials to assemble flexible solid-state asymmetric supercapacitors. The resulting flexible device had a maximum volumetric energy density (0.885 mW h cm-3) and power density (48.9 mW cm-3). Encouragingly, the flexible device exhibited good cycling stability with only about 2.2% loss after 5000 charge-discharge cycles and excellent mechanical stability. These results indicate that porous Ni-Co-Mn oxides prisms have the promising application in high performance electrochemical energy storage.

  18. High temperature oxidation characteristics of developed Ni-Cr-W superalloys in air

    International Nuclear Information System (INIS)

    Suzuki, Tomio; Shindo, Masami

    1996-11-01

    For expanding utilization of the Ni-Cr-W superalloy, which has been developed as one of new high temperature structural materials used in the advanced High Temperature Gas-cooled Reactors (HTGRs), in various engineering fields including the structural material for heat utilization system, the oxidation behavior of this alloy in air as one of high oxidizing environments becomes one of key factors. The oxidation tests for the industrial scale heat of Ni-Cr-W superalloy with the optimized chemical composition and five kinds of experimental Ni-Cr-W alloys with different Cr/W ratio were carried out at high temperatures in the air compared with Hastelloy XR. The conclusions were obtained as follows. (1) The oxidation resistance of the industrial scale heat of Ni-Cr-W superalloy with the optimized chemical composition was superior to that of Hastelloy XR. (2) The most excellent oxidation resistance was obtained in an alloy with 19% Cr of the industrial scale heat of Ni-Cr-W superalloy. (author)

  19. Magnetism of coherent Co and Ni thin films on Cu(111) and Au(111) substrates: An ab initio study

    Energy Technology Data Exchange (ETDEWEB)

    Zelený, Martin, E-mail: zeleny@fme.vutbr.cz; Dlouhý, Ivo

    2017-02-15

    We present an ab initio study of structural and magnetic properties of coherent Co and Ni thin films on Cu(111) and Au(111) substrates with thicknesses of up to 6 monolayers. All studied films on Cu(111) substrates prefer structures close their ground state (hcp for Co and fcc for Ni), whereas only the hcp stacking sequence has been found for both films on Au(111) substrates. All studied films exhibit instability of the first monolayer with respect to decomposition into 2-monolayer- or 3-monolayer-high islands, which is in agreement with experimental findings. All studied films are also ferromagnetic, nevertheless the Ni/Cu(111) films reduce their magnetic moments in the layer adjacent to the substrate due to a stronger Cu–Ni interaction at the interface. The magnetic anisotropy of a Co film does not depend on the film thickness: all the studied Co/Au(111) films exhibit a perpendicular magnetic anisotropy, whereas all the Co/Cu(111) films prefer in-plane magnetization. On the other hand, both Ni films change their preference for in-plane orientation of their easy axis to out-of-plane orientation at a critical thickness of 2 monolayers, however, the magnetic anisotropy energies for films thicker than 1 monolayer are smaller than 1 meV/Ni atom. These behaviors of magnetic anisotropy do not depend on the structure of the studied films. - Highlights: • All films exhibit instability of the first monolayer and prefer grow in islands. • The Cu–Ni interaction is responsible for reduced Ni magnetic moments in Ni/Cu(111) films. • The Co/Au(111) and Co/Cu(111) films show different orientations of magnetic anisotropy. • The Ni films exhibit in-plane magnetization only for single monolayer. • Behaviors of magnetic anisotropy do not depend on the structure of the studied films.

  20. Ni-Si oxide as an inducing crystallization source for making poly-Si

    Energy Technology Data Exchange (ETDEWEB)

    Meng, Zhiguo; Liu, Zhaojun; Li, Juan; Wu, Chunya; Xiong, Shaozhen [Institute of Photo-electronics, Nankai University, Tianjin (China); Zhao, Shuyun; Wong, Man; Kwok, Hoi Sing [Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology, Kowloon, Hong Kong (China)

    2010-04-15

    Nickel silicon oxide mixture was sputtered on a-Si with Ni-Si alloy target with Ni:Si weight ratio of 1:9 and used as a new inducing source for metal induced lateral crystallization (MILC). The characteristics of the resulted poly-Si materials induced by Ni-Si oxide with different thickness were nearly the same. This means the metal induced crystallization with this new inducing source has wide processing tolerance to make MILC poly-Si. Besides, it reduced the residual Ni content in the resulted poly-Si film. The transfer characteristic curve of poly-Si TFT and a TFT-OLED display demo made with this kind of new inducing source were also presented in this paper. (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  1. Hydrogen storage behaviors of Ni-doped graphene Oxide/MIL-101 hybrid composites.

    Science.gov (United States)

    Lee, Seul-Yi; Park, Soo-Jin

    2013-01-01

    In this work, Ni-doped graphene oxide/MIL-101 hybrid composites (Ni--GO/MIL) were prepared to investigate their hydrogen storage behaviors. Ni--GO/MIL was synthesized by adding Ni--GO in situ during the synthesis of MIL-101 using a hydrothermal process, which was conducted by conventional convection heating with Cr(III) ion as a metal center and telephthalic acid as organic ligands. The crystalline structures and morphologies were measured by X-ray diffraction (XRD) and scanning electron microscopy (SEM), respectively. The specific surface area and micropore volume were investigated by N2/77 K adsorption isotherms using the Brunauer-Emmett-Teller (BET) method and Dubinin-Radushkevic (D-R) equation, respectively. The hydrogen storage capacity was investigated by BEL-HP at 77 K and 1 bar. The obtained results show that Ni--GO/MIL presents new directions for achieving novel hybrid materials with higher hydrogen storage capacity.

  2. Bridging exchange bias effect in NiO and Ni(core)@NiO(shell) nanoparticles

    Energy Technology Data Exchange (ETDEWEB)

    Rinaldi-Montes, Natalia, E-mail: nataliarin@gmail.com [Departamento de Física, Universidad de Oviedo, E-33007 Oviedo (Spain); Gorria, Pedro [Departamento de Física & IUTA, EPI, Universidad de Oviedo, E-33203 Gijón (Spain); Martínez-Blanco, David [Servicios Científico-Técnicos, Universidad de Oviedo, E-33006 Oviedo (Spain); Fuertes, Antonio B. [Instituto Nacional del Carbón, CSIC, E-33080 Oviedo (Spain); Fernández Barquín, Luis [CITIMAC, Facultad de Ciencias, Universidad de Cantabria, E-39005 Santander (Spain); Puente-Orench, Inés [Instituto de Ciencia de Materiales de Aragón, CSIC-Universidad de Zaragoza and Institut Laue-Langevin, BP 156, F-38042 Grenoble Cedex 9 (France); Blanco, Jesús A. [Departamento de Física, Universidad de Oviedo, E-33007 Oviedo (Spain)

    2016-02-15

    Among all bi-magnetic core(transition metal)@shell(transition metal oxide) nanoparticles (NPs), Ni@NiO ones show an onset temperature for the exchange bias (EB) effect far below the Néel temperature of bulk antiferromagnetic NiO. In this framework, the role played by the magnetism of NiO at the nanoscale is investigated by comparing the microstructure and magnetic properties of NiO and Ni@NiO NPs. With the aim of bridging the two systems, the diameter of the NiO NPs (~4 nm) is chosen to be comparable to the shell thickness of Ni@NiO ones (~2 nm). The EB effect in Ni@NiO NPs is attributed to the exchange coupling between the core and the shell, with an interfacial exchange energy of ΔE~0.06 erg cm{sup −2}, thus comparable to previous reports on Ni/NiO interfaces both in thin film and NP morphologies. In contrast, the EB detected in NiO NPs is explained in a picture where uncompensated spins located on a magnetically disordered surface shell are exchange coupled to the antiferromagnetic core. In all the studied NPs, the variation of the EB field as a function of temperature is described according to a negative exponential law with a similar decay constant, yielding a vanishing EB effect around T~40–50 K. In addition, the onset temperature for the EB effect in both NiO and Ni@NiO NPs seems to follow a universal dependence with the NiO crystallite size. - Highlights: • Comparison of the exchange bias effect in NiO and Ni(core)@NiO(shell) nanoparticles. • Universal temperature dependence of the exchange bias effect. • Suggested similar physical origin of the effect in both systems. • Size and crystallinity of the NiO shell hold the key for exchange bias properties.

  3. Crystallization of Sr0.5Ba0.5Nb2O6 Thin Films on LaNiO3 Electrodes by RF Magnetron Reactive Sputtering

    Science.gov (United States)

    Jong, Chao-An; Gan, Jon-Yiew

    2000-02-01

    Strontium barium niobium (Sr0.5Ba0.5Nb2O6) (SBN) thin films are prepared on conductive-oxide LNO (LaNiO3) electrodes by the rf magnetron sputtering system. Instead of conventional furnace annealing, SBN thin films are crystallized by rapid thermal annealing (RTA) above 700°C for 5 min. The textured SBN films are crystallized with two orientations: one is the (001) or (310) direction, and the other is the (002) or (620) direction. Films compositions measured by the electron spectroscopy of chemical analysis (ESCA) quantitative analysis method show nearly the same stoichiometric ratio as the target. The depth profiles of SBN films and the target are examined by secondary ion mass spectrometer (SIMS). The concentrations of the films are quite uniform. After being heat treated at 800°C for 5 min by RTA, La and Ni diffuse into the SBN film. The diffusion coefficient of La in SBN films is also calculated.

  4. Contact resistance and stability study for Au, Ti, Hf and Ni contacts on thin-film Mg2Si

    KAUST Repository

    Zhang, Bo

    2016-12-28

    We present a detailed study of post-deposition annealing effects on contact resistance of Au, Ti, Hf and Ni electrodes on Mg2Si thin films. Thin-film Mg2Si and metal contacts were deposited using magnetron sputtering. Various post-annealing temperatures were studied to determine the thermal stability of each contact metal. The specific contact resistivity (SCR) was determined using the Cross Bridge Kelvin Resistor (CBKR) method. Ni contacts exhibits the best thermal stability, maintaining stability up to 400 °C, with a SCR of approximately 10−2 Ω-cm2 after annealing. The increased SCR after high temperature annealing is correlated with the formation of a Mg-Si-Ni mixture identified by cross-sectional scanning transmission electron microscopy (STEM) characterization, X-ray diffraction characterization (XRD) and other elemental analyses. The formation of this Mg-Si-Ni mixture is attributed to Ni diffusion and its reaction with the Mg2Si film.

  5. CO_2 capture in Mg oxides doped with Fe and Ni

    International Nuclear Information System (INIS)

    Sanchez S, I. F.

    2016-01-01

    In this work the CO_2 capture-desorption characteristics in Mg oxides doped with Fe and Ni obtained by the direct oxidation of Mg-Ni and Mg-Fe mixtures are presented. Mixtures of Mg-Ni and Mg-Fe in a different composition were obtained by mechanical milling in a Spex-type mill in a controlled atmosphere of ultra high purity argon at a weight / weight ratio of 4:1 powder using methanol as a lubricating agent, for 20 h. The powders obtained by mechanical milling showed as main phase, the Mg with nanocrystalline structure. Subsequently, the mixtures of Mg-Ni and Mg-Fe were oxidized within a muffle for 10 min at 600 degrees Celsius. By means of X-ray diffraction analysis, the Mg O with nano metric grain size was identified as the main phase, which was determined by the Scherrer equation. In the Mg O doped with Ni, was identified that as the Ni amount 1 to 5% by weight dispersed in the Mg O matrix was increased, the main peak intensity of the Ni phase increased, whereas in the Mg O doped with Fe was observed by XRD, that the Fe_2O_3 phase was present and by increasing the amount of Fe (1 to 5% by weight) dispersed in the crystalline phase of Mg O, the intensity of this impurity also increased. Sem-EDS analysis showed that the Ni and Fe particles are dispersed homogeneously in the Mg O matrix, and the particles are porous, forming agglomerates. Through energy dispersive spectroscopy analysis, the elemental chemical composition obtained is very close to the theoretical composition. The capture of CO_2 in the Mg O-1% Ni was carried out in a Parr reactor at different conditions of pressure, temperature and reaction time. Was determined that under the pressure of 0.2 MPa at 26 degrees Celsius for 1 h of reaction, the highest CO_2 capture of 7.04% by weight was obtained, while in Mg O-1% Fe the CO_2 capture was 6.32% by weight. The other magnesium oxides doped in 2.5 and 5% by weight Ni and Fe showed lower CO_2 capture. The different stages of mass loss and thermal

  6. Preparation of nickel oxide thin films at different annealing temperature by sol-gel spin coating method

    Energy Technology Data Exchange (ETDEWEB)

    Abdullah, M. A. R., E-mail: ameerridhwan89@gmail.com; Mamat, M. H., E-mail: hafiz-030@yahoo.com; Ismail, A. S., E-mail: kyrin-samaxi@yahoo.com [NANO-ElecTronic Centre (NET), Faculty of Electrical Engineering, Universiti Teknologi MARA (UiTM), 40450 Shah Alam, Selangor (Malaysia); Malek, M. F., E-mail: firz-solarzelle@yahoo.com [NANO-SciTech Centre (NST), Institute of Science (IOS), Universiti Teknologi MARA - UiTM, 40450 Shah Alam, Selangor (Malaysia); Alrokayan, Salman A. H., E-mail: dr.salman@alrokayan.com; Khan, Haseeb A., E-mail: khan-haseeb@yahoo.com [Chair of Targeting and Treatment of Cancer Using Nanoparticles, Deanship of Scientific Research, King Saud University (KSU), Riyadh 11451 (Saudi Arabia); Rusop, M., E-mail: rusop@salam.uitm.my [NANO-ElecTronic Centre (NET), Faculty of Electrical Engineering, Universiti Teknologi MARA (UiTM), 40450 Shah Alam, Selangor (Malaysia); NANO-SciTech Centre (NST), Institute of Science (IOS), Universiti Teknologi MARA - UiTM, 40450 Shah Alam, Selangor (Malaysia)

    2016-07-06

    Preparation of NiO thin films at different annealing temperature by sol-gel method was conducted to synthesize the quality of the surface thin films. The effects of annealing temperature on the surface topology were systematically investigated. Our studies confirmed that the surface roughness of the thin films was increased whenever annealing temperature was increase. NiO thin films morphology structure analysis was confirmed by field emission scanning electron microscope. Surface roughness of the thin films was investigated by atomic force microscopy.

  7. Preparation of nickel oxide thin films at different annealing temperature by sol-gel spin coating method

    International Nuclear Information System (INIS)

    Abdullah, M. A. R.; Mamat, M. H.; Ismail, A. S.; Malek, M. F.; Alrokayan, Salman A. H.; Khan, Haseeb A.; Rusop, M.

    2016-01-01

    Preparation of NiO thin films at different annealing temperature by sol-gel method was conducted to synthesize the quality of the surface thin films. The effects of annealing temperature on the surface topology were systematically investigated. Our studies confirmed that the surface roughness of the thin films was increased whenever annealing temperature was increase. NiO thin films morphology structure analysis was confirmed by field emission scanning electron microscope. Surface roughness of the thin films was investigated by atomic force microscopy.

  8. Avoiding polar catastrophe in the growth of polarly orientated nickel perovskite thin films by reactive oxide molecular beam epitaxy

    International Nuclear Information System (INIS)

    Yang, H. F.; Liu, Z. T.; Fan, C. C.; Xiang, P.; Zhang, K. L.; Li, M. Y.; Liu, J. S.; Yao, Q.; Shen, D. W.

    2016-01-01

    By means of the state-of-the-art reactive oxide molecular beam epitaxy, we synthesized (001)- and (111)-orientated polar LaNiO 3 thin films. In order to avoid the interfacial reconstructions induced by polar catastrophe, screening metallic Nb-doped SrTiO 3 and iso-polarity LaAlO 3 substrates were chosen to achieve high-quality (001)-orientated films in a layer-by-layer growth mode. For largely polar (111)-orientated films, we showed that iso-polarity LaAlO 3 (111) substrate was more suitable than Nb-doped SrTiO 3 . In situ reflection high-energy electron diffraction, ex situ high-resolution X-ray diffraction, and atomic force microscopy were used to characterize these films. Our results show that special attentions need to be paid to grow high-quality oxide films with polar orientations, which can prompt the explorations of all-oxide electronics and artificial interfacial engineering to pursue intriguing emergent physics like proposed interfacial superconductivity and topological phases in LaNiO 3 based superlattices.

  9. Room temperature ferromagnetism in (In{sub 1-x}Ni{sub x}){sub 2}O{sub 3} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Sai Krishna, N. [Thin Films Laboratory, School of Advanced Sciences, VIT University, Vellore 632014, Tamilnadu (India); Kaleemulla, S., E-mail: skaleemulla@gmail.com [Thin Films Laboratory, School of Advanced Sciences, VIT University, Vellore 632014, Tamilnadu (India); Amarendra, G. [Materials Science Group, Indira Gandhi Centre for Atomic Research, Kalpakkam 603102, Tamilnadu (India); UGC-DAE-CSR, Kalpakkam Node, Kokilamedu 603104,Tamilnadu (India); Madhusudhana Rao, N.; Krishnamoorthi, C.; Rigana Begam, M. [Thin Films Laboratory, School of Advanced Sciences, VIT University, Vellore 632014, Tamilnadu (India); Omkaram, I. [Department of Electronics and Radio Engineering, Kyung Hee University, Yongin-si, Gyeonggi-do 446-701 (Korea, Republic of); Sreekantha Reddy, D. [Department of Physics and Sungkyunkwan Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon 440-746 (Korea, Republic of)

    2015-06-15

    Polycrystalline (In{sub 1−x}Ni{sub x}){sub 2}O{sub 3} thin films (x=0.00, 0.03, 0.05 and 0.07) were deposited on glass substrates by electron beam evaporation technique. The effect of Ni concentration on composition, structural and magnetic properties of (In{sub 1−x}Ni{sub x}){sub 2}O{sub 3} thin films was studied. Increment in the Ni concentration does increase the oxygen vacancies and ferromagnetic strength in (In{sub 1−x}Ni{sub x}){sub 2}O{sub 3} thin films. X-ray photoelectron spectroscopy (XPS) studies indicate the dopant Ni exists in Ni (II) state in In{sub 2}O{sub 3} host. Ferromagnetism was attributed to intrinsic nature of the sample rather than any secondary magnetic phases exist in the films. The observed ferromagnetism in (In{sub 1−x}Ni{sub x}){sub 2}O{sub 3} was attributed to ferromagnetic exchange interaction between Ni{sup 2+} ions via single free electron trapped in oxygen vacancy. Increase in oxygen vacancies with Ni concentration lead to increase in such an oxygen vacancy mediated ferromagnetic pairs resulting in increase in ferromagnetic strength with Ni concentration.

  10. Sputtered tin oxide and titanium oxide thin films as alternative transparent conductive oxides

    Energy Technology Data Exchange (ETDEWEB)

    Boltz, Janika

    2011-12-12

    Alternative transparent conductive oxides to tin doped indium oxide have been investigated. In this work, antimony doped tin oxide and niobium doped titanium oxide have been studied with the aim to prepare transparent and conductive films. Antimony doped tin oxide and niobium doped titanium oxide belong to different groups of oxides; tin oxide is a soft oxide, while titanium oxide is a hard oxide. Both oxides are isolating materials, in case the stoichiometry is SnO{sub 2} and TiO{sub 2}. In order to achieve transparent and conductive films free carriers have to be generated by oxygen vacancies, by metal ions at interstitial positions in the crystal lattice or by cation doping with Sb or Nb, respectively. Antimony doped tin oxide and niobium doped titanium oxide films have been prepared by reactive direct current magnetron sputtering (dc MS) from metallic targets. The process parameters and the doping concentration in the films have been varied. The films have been electrically, optically and structurally analysed in order to analyse the influence of the process parameters and the doping concentration on the film properties. Post-deposition treatments of the films have been performed in order to improve the film properties. For the deposition of transparent and conductive tin oxide, the dominant parameter during the deposition is the oxygen content in the sputtering gas. The Sb incorporation as doping atoms has a minor influence on the electrical, optical and structural properties. Within a narrow oxygen content in the sputtering gas highly transparent and conductive tin oxide films have been prepared. In this study, the lowest resistivity in the as deposited state is 2.9 m{omega} cm for undoped tin oxide without any postdeposition treatment. The minimum resistivity is related to a transition to crystalline films with the stoichiometry of SnO{sub 2}. At higher oxygen content the films turn out to have a higher resistivity due to an oxygen excess. After post

  11. Synthesis, characterization, and photoactivity of InTaO4 and In0.9Ni0.1TaO4 thin films prepared by electron evaporation

    International Nuclear Information System (INIS)

    Rico, V. J.; Frutos, F.; Yubero, F.; Espinos, J. P.; Gonzales-Elipe, A. R.

    2010-01-01

    InTaO 4 and In 0.9 Ni 0.1 TaO 4 thin films have been prepared by electron evaporation of successive layers of the single oxide components and posterior annealing at T>800 deg. C. The annealed thin films presented the monoclinic crystallographic structure typical of these mixed oxides. The electrical and optical behaviors of the films, assessed by C-V measurements, surface conductivity as a function of temperature, and UV-vis absorption spectroscopy, indicate that these oxides are wide band gap semiconductors with a variable dielectric constant depending on the annealing conditions. By reflection electron energy loss spectroscopy some electronic states have been found in the gap at an energy that is compatible with the activation energy deduced from the conductivity versus 1/T plots for these oxides. The photoactivity of these materials has been assessed by looking to the evolution of the wetting contact angle as a function of the irradiation time. All the films became superhydrophilic when irradiated with UV light, while the In 0.9 Ni 0.1 TaO 4 thin films also presented a small partial decrease in wetting angle when irradiated with visible photons.

  12. Structural characterization of metastable hcp-Ni thin films epitaxially grown on Au(100) single-crystal underlayers

    International Nuclear Information System (INIS)

    Ohtake, Mitsuru; Tanaka, Takahiro; Futamoto, Masaaki; Kirino, Fumiyoshi

    2010-01-01

    Ni(1120) epitaxial thin films with hcp structure were prepared on Au(100) single-crystal underlayers at 100 deg. C by ultra high vacuum molecular beam epitaxy. The detailed film structure is studied by in situ reflection high energy electron diffraction, x-ray diffraction, and transmission electron microscopy. The hcp-Ni film consists of two types of variants whose c-axes are rotated around the film normal by 90 deg. each other. An atomically sharp boundary is recognized between the film and the underlayer, where misfit dislocations are introduced. Presence of such dislocations seems to relieve the strain caused by the lattice mismatch between the film and the underlayer.

  13. Abnormal resistance switching behaviours of NiO thin films: possible occurrence of both formation and rupturing of conducting channels

    Energy Technology Data Exchange (ETDEWEB)

    Liu Chunli; Chae, S C; Chang, S H; Lee, S B; Noh, T W [ReCOE and FPRD, Department of Physics and Astronomy, Seoul National University, Seoul 151-747 (Korea, Republic of); Lee, J S; Kahng, B [Department of Physics and Astronomy, Seoul National University, Seoul 151-747 (Korea, Republic of); Kim, D-W [Division of Nano Sciences and Department of Physics, Ewha Womens University, Seoul 120-750 (Korea, Republic of); Jung, C U [Department of Physics, Hankuk University of Foreign Studies, Yongin, Gyeonggi-do 449-791 (Korea, Republic of); Seo, S; Ahn, S-E [Samsung Advanced Institute of Technology, Suwon 440-600 (Korea, Republic of)], E-mail: twnoh@snu.ac.kr

    2009-01-07

    We report a detailed study on the abnormal resistance switching behaviours observed in NiO thin films which show unipolar resistance switching phenomena. During the RESET process, in which the NiO film changed from a low resistance state to a high resistance state, we sometimes observed that the resistance became smaller than the initial value. We simulated the resistance switching by using a random circuit breaker network model. We found that local conducting channels could be formed as well as ruptured during the RESET process, which result in the occurrence of such abnormal switching behaviours.

  14. In situ growth of well-ordered NiFe-MOF-74 on Ni foam by Fe2+ induction as an efficient and stable electrocatalyst for water oxidation.

    Science.gov (United States)

    Xing, Jiale; Guo, Kailu; Zou, Zehua; Cai, Minmin; Du, Jing; Xu, Cailing

    2018-06-06

    Well-ordered NiFe-MOF-74 is in situ grown on Ni foam by the induction of Fe2+ and directly used as an OER electrocatalyst. Benefited from the intrinsic open porous structure of MOF-74, the in situ formed MOF arrays and the synergistic effect of Ni and Fe, outstanding water oxidation activity is obtained in alkaline electrolytes with an overpotential of 223 mV at 10 mA cm-2.

  15. One - Step synthesis of nitrogen doped reduced graphene oxide with NiCo nanoparticles for ethanol oxidation in alkaline media.

    Science.gov (United States)

    Kakaei, Karim; Marzang, Kamaran

    2016-01-15

    Development of anode catalysts and catalyst supporting carbonaceous material containing non-precious metal have attracted tremendous attention in the field of direct ethanol fuel cells (DEFCs). Herein, we report the synthesis and electrochemical properties of nitrogen-doped reduced graphene oxide (NRGO) supported Co, Ni and NiCo nanocomposites. The metal NRGO nanocomposites, in which metal nanoparticles are embedded in the highly porous nitrogen-doped graphene matrix, have been synthesized by simply and one-pot method at a mild temperature using GO, urea choline chloride and urea as reducing and doping agent. The fabricated NiCo/NRGO exhibit remarkable electrocatalytic activity (with Tafel slope of 159.1mVdec(-1)) and high stability for the ethanol oxidation reaction (EOR). The superior performance of the alloy based NRGO is attributed to high surface area, well uniform distribution of high-density nitrogen, metal active sites and synergistic effect. Copyright © 2015 Elsevier Inc. All rights reserved.

  16. Composition, structure and magnetic properties of sputter deposited Ni-Mn-Ga ferromagnetic shape memory thin films

    Energy Technology Data Exchange (ETDEWEB)

    Annadurai, A.; Nandakumar, A.K.; Jayakumar, S.; Kannan, M.D. [Thin Film Center, Department of Physics, PSG College of Technology, Coimbatore 641004 (India); Manivel Raja, M.; Bysak, S. [Defence Metallurgical Research Laboratory, Kanchanbagh, Hyderabad, Andhra Pradesh 500 058 (India); Gopalan, R. [Defence Metallurgical Research Laboratory, Kanchanbagh, Hyderabad, Andhra Pradesh 500 058 (India)], E-mail: rg_gopy@yahoo.com; Chandrasekaran, V. [Defence Metallurgical Research Laboratory, Kanchanbagh, Hyderabad, Andhra Pradesh 500 058 (India)

    2009-03-15

    Polycrystalline Ni-Mn-Ga thin films were deposited by the d.c. magnetron sputtering on well-cleaned substrates of Si(1 0 0) and glass at a constant sputtering power of 36 W. We report the influence of sputtering pressure on the composition, structure and magnetic properties of the sputtered thin films. These films display ferromagnetic behaviour only after annealing at an elevated temperature and a maximum saturation magnetization of 335 emu/cc was obtained for the films investigated. Evolution of martensitic microstructure was observed in the annealed thin films with the increase of sputtering pressure. The thermo-magnetic curves exhibited only magnetic transition in the temperature range of 339-374 K. The thin film deposited at high sputtering pressure of 0.025 mbar was found to be ordered L2{sub 1} austenitic phase.

  17. Cyclic oxidation behavior of plasma sprayed NiCrAlY/WC-Co/cenosphere coating

    Science.gov (United States)

    Mathapati, Mahantayya; Ramesh M., R.; Doddamani, Mrityunjay

    2018-04-01

    Components working at elevated temperature like boiler tubes of coal and gas fired power generation plants, blades of gas and steam turbines etc. experience degradation owing to oxidation. Oxidation resistance of such components can be increased by developing protective coatings. In the present investigation NiCrAlY-WC-Co/Cenosphere coating is deposited on MDN 321 steel substrate using plasma spray coating. Thermo cyclic oxidation behavior of coating and substrate is studied in static air at 600 °C for 20 cycles. The thermo gravimetric technique is used to approximate the kinetics of oxidation. X-Ray Diffraction (XRD), Scanning Electron Microscope (SEM), Energy Dispersive Spectroscopy (EDS) and X-ray mapping techniques are used to characterize the oxidized samples. NiCrAlY-WC-Co/Cenosphere coating exhibited lower oxidation rate in comparison to MDN 321 steel substrate. The lower oxidation rate of coating is attributed to formation of Al2O3, Cr2O3, NiO and CoWO4 oxides on the outermost surface.

  18. Improved coking resistance of direct ethanol solid oxide fuel cells with a Ni-Sx anode

    Science.gov (United States)

    Yan, Ning; Luo, Jing-Li; Chuang, Karl T.

    2014-03-01

    In this study, the coking resistance of anode supported direct ethanol solid oxide fuel cell with a Ni-Sx anode was investigated comparatively with the conventional cell using pure Ni catalyst. The surface catalytic properties of Ni were manipulated via depositing a layer of S atoms. It was confirmed that on the surface of Ni, a combination of S monolayer and elemental S was formed without producing Ni3S2 phase. The developed Ni-Sx cell exhibited a significantly improved coke resistivity in ethanol feed while maintaining an adequately high performance. The S species on Ni enabled the suppression of the coke formation as well as the alleviation of the metal dusting effect of the anode structure. After operating in ethanol fuel for identical period of time at 850 °C, a maximum power density of 400 mW cm-2 was sustained whereas the conventional cell performance decreased to less than 40 mW cm-2 from the original 704 mW cm-2. In an optimized stability test, the Ni-Sx cell operated at 750 °C for more than 22 h until the fuel drained without any degradation.

  19. Magnetic properties of thermally reduced graphene oxide decorated with PtNi nanoparticles

    Energy Technology Data Exchange (ETDEWEB)

    Huízar-Félix, A.M. [Universidad Autónoma de Nuevo León, UANL, Facultad de Ingeniería Mecánica y Eléctrica, FIME, Ave. Pedro de Alba s/n, Ciudad Universitaria, C.P.66455 San Nicolás de los Garza, N.L. (Mexico); Departamento de Electricidad y Electrónica, Universidad del País Vasco (UPV/EHU), 48940 Leioa (Spain); BC Materials, Basque Centre for Materials, Applications and Nanostructures, 48160 Derio (Spain); Cruz-Silva, R. [Research Center for Exotic NanoCarbon, Shinshu University, 4-17-1 Wakasato, Nagano 380-8553 (Japan); Barandiarán, J.M. [Departamento de Electricidad y Electrónica, Universidad del País Vasco (UPV/EHU), 48940 Leioa (Spain); BC Materials, Basque Centre for Materials, Applications and Nanostructures, 48160 Derio (Spain); García-Gutiérrez, D.I. [Universidad Autónoma de Nuevo León, UANL, Facultad de Ingeniería Mecánica y Eléctrica, FIME, Ave. Pedro de Alba s/n, Ciudad Universitaria, C.P.66455 San Nicolás de los Garza, N.L. (Mexico); Orue, I. [SGIKER Medidas Magnéticas, Facultad de Ciencia y Tecnología, Universidad del País Vasco (UPV/EHU), 48940 Leioa (Spain); and others

    2016-09-05

    Nanocomposites of reduced graphene oxide (RGO) with PtNi nanoparticles were obtained by in situ thermal reduction of a physical mixture of GO and metallic precursors. RGO and PtNiRGO nanocomposites were studied by differential thermal analysis and thermogravimetry, Fourier transform infrared spectroscopy (FTIR), powder X-ray diffraction (XRD), as well as scanning electron microscopy (SEM) and transmission electron microscopy (TEM). The method presented here is a one-step thermal reduction procedure that allows the deposition of bimetallic PtNi nanoparticles with tetragonal crystalline structure and particle size ranging from 3 nm to 30 nm on RGO. The magnetic properties of the RGO and PtNiRGO nanocomposites were measured by vibrating sample magnetometry, which revealed that the RGO exhibited diamagnetism at room temperature and paramagnetism at temperatures below 10 K. PtNiRGO nanocomposites show hysteresis and ferromagnetic ordering at room temperature with a Curie temperature of 658 K. In addition, its magnetic properties at low temperature were strongly influenced by the paramagnetic contribution of RGO and the morphology of the bimetallic nanoparticles. - Highlights: • Simultaneous synthesis method for growth of PtNi nanoparticles on RGO. • Microstructural features of PtNiRGO nanocomposite were studied with extensive characterization. • Diamagnetic behavior of RGO and ferromagnetic ordering for PtNiRGO nanocomposite.

  20. Surface treatment of NiTi shape memory alloy by modified advanced oxidation process

    Institute of Scientific and Technical Information of China (English)

    CHU Cheng-lin; WANG Ru-meng; YIN Li-hong; PU Yue-pu; DONG Yin-sheng; GUO Chao; SHENG Xiao-bo; LIN Ping-hua; CHU Paul-K

    2009-01-01

    A modified advanced oxidation process(AOP) utilizing a UV/electrochemically-generated peroxide system was used to fabricate titania films on chemically polished NiTi shape memory alloy(SMA). The microstructure and biomedical properties of the film were characterized by scanning electron microscopy(SEM), X-ray photoelectron spectroscopy(XPS), inductively-coupled plasma mass spectrometry(ICPMS), hemolysis analysis, and blood platelet adhesion test. It is found that the modified AOP has a high processing effectiveness and can result in the formation of a dense titania film with a Ni-free zone near its top surface. In comparison, Ni can still be detected on the outer NiTi surface by the conventional AOP using the UV/H2O2 system. The depth profiles of O, Ni, Ti show that the film possesses a smooth graded interface structure next to the NiTi substrate and this structure enhances the mechanical stability of titania film. The titania film can dramatically reduce toxic Ni ion release and also improve the hemolysis resistance and thromboresistance of biomedical NiTi SMA.

  1. Seed-mediated synthesis of cross-linked Pt-NiO nanochains for methanol oxidation

    Science.gov (United States)

    Gu, Zhulan; Bin, Duan; Feng, Yue; Zhang, Ke; Wang, Jin; Yan, Bo; Li, Shumin; Xiong, Zhiping; Wang, Caiqin; Shiraishi, Yukihide; Du, Yukou

    2017-07-01

    A simple method was reported for employing NiO nanoparticles act as seeds and then different amounts of Pt2+ were reduced on the NiO nanoparticles, forming a cross-linked Pt-NiO nanocatalysts. These as-prepared catalysts were characterized using different physical-chemical techniques, including X-ray diffraction (XRD), transmission electron microscopy (TEM) and X-ray photoelectron spectroscopy (XPS). The results indicate that the morphology of the cross-linked Pt-NiO nanochain was successfully produced regardless of the molar ratio of Pt2+ to NiO precursors. The electrochemical characteristics of Pt-NiO nanochain catalysts were evaluated for the oxidation of methanol as a model reaction, which verify that the Pt-NiO catalysts show enhanced activity and high stability in comparison with the commercial Pt/C catalyst. The optimized ratio of Pt to NiO is 1:1, then tuned by simple adjusting the feed ratio of the precursors as well. The synthesized nanocatalysts will be found the great potential applications as electrocatalysts for fuel cells owe to their enhanced catalytic performance and long-term stability.

  2. Albumin adsorption on oxide thin films studied by spectroscopic ellipsometry

    Energy Technology Data Exchange (ETDEWEB)

    Silva-Bermudez, P., E-mail: suriel21@yahoo.com [Instituto de Investigaciones en Materiales, Universidad Nacional Autonoma de Mexico, Circuito Exterior s/n, C.U., 04510, Mexico D.F. (Mexico); Unidad de Posgrado, Facultad de Odontologia, Universidad Nacional Autonoma de Mexico, CU, 04510, Mexico D.F. (Mexico); Rodil, S.E.; Muhl, S. [Instituto de Investigaciones en Materiales, Universidad Nacional Autonoma de Mexico, Circuito Exterior s/n, C.U., 04510, Mexico D.F. (Mexico)

    2011-12-15

    Thin films of tantalum, niobium, zirconium and titanium oxides were deposited by reactive magnetron sputtering and their wettability and surface energy, optical properties, roughness, chemical composition and microstructure were characterized using contact angle measurements, spectroscopic ellipsometry, profilometry, X-ray photoelectron spectroscopy and X-ray diffraction, respectively. The purpose of the work was to correlate the surface properties of the films to the Bovine Serum Albumin (BSA) adsorption, as a first step into the development of an initial in vitro test of the films biocompatibility, based on standardized protein adsorption essays. The films were immersed into BSA solutions with different protein concentrations and protein adsorption was monitored in situ by dynamic ellipsometry; the adsorption-rate was dependent on the solution concentration and the immersion time. The overall BSA adsorption was studied in situ using spectroscopic ellipsometry and it was found to be influenced by the wettability of the films; larger BSA adsorption occurred on the more hydrophobic surface, the ZrO{sub 2} film. On the Ta{sub 2}O{sub 5}, Nb{sub 2}O{sub 5} and TiO{sub 2} films, hydrophilic surfaces, the overall BSA adsorption increased with the surface roughness or the polar component of the surface energy.

  3. Combined effect of oxygen deficient point defects and Ni doping in radio frequency magnetron sputtering deposited ZnO thin films

    Energy Technology Data Exchange (ETDEWEB)

    Saha, B., E-mail: biswajit.physics@gmail.com [Thin Film and Nano Science Laboratory, Department of Physics, Jadavpur University, 700 032 Kolkata (India); Department of Physics, National Institute of Technology Agartala, Jirania 799046, Tripura (India); Das, N.S.; Chattopadhyay, K.K. [Thin Film and Nano Science Laboratory, Department of Physics, Jadavpur University, 700 032 Kolkata (India)

    2014-07-01

    Ni doped ZnO thin films with oxygen deficiency have been synthesized on glass substrates by radio frequency magnetron sputtering technique using argon plasma. The combined effect of point defects generated due to oxygen vacancies and Ni doping on the optical and electrical properties of ZnO thin films has been studied in this work. Ni doping concentrations were varied and the structural, optical and electrical properties of the films were studied as a function of doping concentrations. The films were characterized with X-ray diffractometer, UV–Vis–NIR spectrophotometer, X-ray photoelectron spectroscopy, atomic force microscopy and electrical conductivity measurements. Oxygen deficient point defects (Schottky defects) made the ZnO thin film highly conducting while incorporation of Ni dopant made it more functional regarding their electrical and optical properties. The films were found to have tunable electrical conductivity with Ni doping concentrations. - Highlights: • ZnO thin films prepared by radio frequency magnetron sputtering technique • Synthesis process was stimulated to introduce Schottky-type point defects. • Point defects and external doping of Ni made ZnO thin films more functional. • Point defect induced high electrical conductivity in ZnO thin film. • Significant shift in optical bandgap observed in ZnO with Ni doping concentrations.

  4. Microfabricated Cantilevers Based on Sputtered Thin-Film Ni50Ti50 Shape Memory Alloy (SMA)

    Science.gov (United States)

    2015-08-01

    surface coating developed during the NiTi deposition or anneal that is relatively resistant to the wet etch. Fig. 2 SEMs after the NiTi wet -etch...SEMs of NiTi devices after the 600 °C anneal , wet -etch patterning of the NiTi. A 120-nm Au capping layer was also sputtered. Figure 3a shows a 200-nm...Ni50Ti50 Cantilever 2 3. Results and Discussion 3 3.1 Wet -Etch Patterning NiTi 3 3.2 Dry-Etch Release of NiTi Devices 5 3.3 Thermal Actuation of

  5. Cyclic voltammetry on sputter-deposited films of electrochromic Ni oxide: Power-law decay of the charge density exchange

    Energy Technology Data Exchange (ETDEWEB)

    Wen, Rui-Tao, E-mail: Ruitao.Wen@angstrom.uu.se; Granqvist, Claes G.; Niklasson, Gunnar A. [Department of Engineering Sciences, The A°ngström Laboratory, Uppsala University, P. O. Box 534, SE-75121 Uppsala (Sweden)

    2014-10-20

    Ni-oxide-based thin films were produced by reactive direct-current magnetron sputtering and were characterized by X-ray diffraction and Rutherford backscattering spectroscopy. Intercalation of Li{sup +} ions was accomplished by cyclic voltammetry (CV) in an electrolyte of LiClO{sub 4} in propylene carbonate, and electrochromism was documented by spectrophotometry. The charge density exchange, and hence the optical modulation span, decayed gradually upon repeated cycling. This phenomenon was accurately described by an empirical power law, which was valid for at least 10{sup 4} cycles when the applied voltage was limited to 4.1 V vs Li/Li{sup +}. Our results allow lifetime assessments for one of the essential components in an electrochromic device such as a “smart window” for energy-efficient buildings.

  6. Nanotextured Spikes of α-Fe2O3/NiFe2O4 Composite for Efficient Photoelectrochemical Oxidation of Water.

    Science.gov (United States)

    Hussain, Shabeeb; Tavakoli, Mohammad Mahdi; Waleed, Aashir; Virk, Umar Siddique; Yang, Shihe; Waseem, Amir; Fan, Zhiyong; Nadeem, Muhammad Arif

    2018-03-27

    We demonstrate for the first time the application of p-NiFe 2 O 4 /n-Fe 2 O 3 composite thin films as anode materials for light-assisted electrolysis of water. The p-NiFe 2 O 4 /n-Fe 2 O 3 composite thin films were deposited on planar fluorinated tin oxide (FTO)-coated glass as well as on 3D array of nanospike (NSP) substrates. The effect of substrate (planar FTO and 3D-NSP) and percentage change of each component (i.e., NiFe 2 O 4 and Fe 2 O 3 ) of composite was studied on photoelectrochemical (PEC) water oxidation reaction. This work also includes the performance comparison of p-NiFe 2 O 4 /n-Fe 2 O 3 composite (planar and NSP) devices with pure hematite for PEC water oxidation. Overall, the nanostructured p-NiFe 2 O 4 /n-Fe 2 O 3 device with equal molar 1:1 ratio of NiFe 2 O 4 and Fe 2 O 3 was found to be highly efficient for PEC water oxidation as compared with pure hematite, 1:2 and 1:3 molar ratios of composite. The photocurrent density of 1:1 composite thin film on planar substrate was equal to 1.07 mA/cm 2 at 1.23 V RHE , which was 1.7 times higher current density as compared with pure hematite device (0.63 mA/cm 2 at 1.23 V RHE ). The performance of p-NiFe 2 O 4 /n-Fe 2 O 3 composites in PEC water oxidation was further enhanced by their deposition over 3D-NSP substrate. The highest photocurrent density of 2.1 mA/cm 2 at 1.23 V RHE was obtained for the 1:1 molar ratio p-NiFe 2 O 4 /n-Fe 2 O 3 composite on NSP (NF1-NSP), which was 3.3 times more photocurrent density than pure hematite. The measured applied bias photon-to-current efficiency (ABPE) value of NF1-NSP (0.206%) was found to be 1.87 times higher than that of NF1-P (0.11%) and 4.7 times higher than that of pure hematite deposited on FTO-coated glass (0.044%). The higher PEC water oxidation activity of p-NiFe 2 O 4 /n-Fe 2 O 3 composite thin film as compared with pure hematite is attributed to the Z-path scheme and better separation of electrons and holes. The increased surface area and greater light

  7. Thin film bismuth iron oxides useful for piezoelectric devices

    Science.gov (United States)

    Zeches, Robert J.; Martin, Lane W.; Ramesh, Ramamoorthy

    2016-05-31

    The present invention provides for a composition comprising a thin film of BiFeO.sub.3 having a thickness ranging from 20 nm to 300 nm, a first electrode in contact with the BiFeO.sub.3 thin film, and a second electrode in contact with the BiFeO.sub.3 thin film; wherein the first and second electrodes are in electrical communication. The composition is free or essentially free of lead (Pb). The BFO thin film is has the piezoelectric property of changing its volume and/or shape when an electric field is applied to the BFO thin film.

  8. Thin copper oxide films prepared by ion beam sputtering with subsequent thermal oxidation: Application in chemiresistors

    Science.gov (United States)

    Horak, P.; Bejsovec, V.; Vacik, J.; Lavrentiev, V.; Vrnata, M.; Kormunda, M.; Danis, S.

    2016-12-01

    Copper oxide films were prepared by thermal oxidation of thin Cu films deposited on substrates by ion beam sputtering. The subsequent oxidation was achieved in the temperature range of 200 °C-600 °C with time of treatment from 1 to 7 h (with a 1-h step) in a furnace open to air. At temperatures 250 °C-600 °C, the dominant phase formed was CuO, while at 200 °C mainly the Cu2O phase was identified. However, the oxidation at 200 °C led to a more complicated composition - in the depth Cu2O phase was observed, though in the near-surface layer the CuO dominant phase was found with a significant presence of Cu(OH)2. A limited amount of Cu2O was also found in samples annealed at 600 °C. The sheet resistance RS of the as-deposited Cu sample was 2.22 Ω/□, after gradual annealing RS was measured in the range 2.64 MΩ/□-2.45 GΩ/□. The highest RS values were obtained after annealing at 300 °C and 350 °C, respectively. Oxygen depth distribution was studied using the 16O(α,α) nuclear reaction with the resonance at energy 3032 keV. It was confirmed that the higher oxidation degree of copper is located in the near-surface region. Preliminary tests of the copper oxide films as an active layer of a chemiresistor were also performed. Hydrogen and methanol vapours, with a concentration of 1000 ppm, were detected by the sensor at an operating temperature of 300 °C and 350 °C, respectively. The response of the sensors, pointed at the p-type conductivity, was improved by the addition of thin Pd or Au catalytic films to the oxidic film surface. Pd-covered films showed an increased response to hydrogen at 300 °C, while Au-covered films were more sensitive to methanol vapours at 350 °C.

  9. Interaction of Ni-Re and Ni-W alloys with residual gases and carbonates under working conditions of oxide cathodes of electronic vacuum instrumentation

    International Nuclear Information System (INIS)

    Arskaya, E.P.; Korotkov, N.A.; Lazarev, Eh.M.

    1979-01-01

    Using the method of th micro X-ray spectrum, electron diffraction, micro X-ray spectrum and electron probe analysis and measuring the microhardness, the composition and structure of the zone, in which Ni-W-La and Ni-Re-La alloy core samples contact the oxide coating, have been studied. Analyzed was the significance of the diffusion processes, occurring dUring the continuous operation of oxide cathodes at increased temperatures. The diffusion constants of the Ni-W system in the temperature range of the oxide cathodes operation have been determined. It is shown that during the continuous operation of electrovaccuum instruments (10.000 hrs), Ni-Re alloys should be used as oxide cathode core sample materials, as they maintain their shape well and possess good electrophysical and emission characteristics

  10. Perovskite Oxide Thin Film Growth, Characterization, and Stability

    Science.gov (United States)

    Izumi, Andrew

    Studies into a class of materials known as complex oxides have evoked a great deal of interest due to their unique magnetic, ferroelectric, and superconducting properties. In particular, materials with the ABO3 perovskite structure have highly tunable properties because of the high stability of the structure, which allows for large scale doping and strain. This also allows for a large selection of A and B cations and valences, which can further modify the material's electronic structure. Additionally, deposition of these materials as thin films and superlattices through techniques such as pulsed laser deposition (PLD) results in novel properties due to the reduced dimensionality of the material. The novel properties of perovskite oxide heterostructures can be traced to a several sources, including chemical intermixing, strain and defect formation, and electronic reconstruction. The correlations between microstructure and physical properties must be investigated by examining the physical and electronic structure of perovskites in order to understand this class of materials. Some perovskites can undergo phase changes due to temperature, electrical fields, and magnetic fields. In this work we investigated Nd0.5Sr 0.5MnO3 (NSMO), which undergoes a first order magnetic and electronic transition at T=158K in bulk form. Above this temperature NSMO is a ferromagnetic metal, but transitions into an antiferromagnetic insulator as the temperature is decreased. This rapid transition has interesting potential in memory devices. However, when NSMO is deposited on (001)-oriented SrTiO 3 (STO) or (001)-oriented (LaAlO3)0.3-(Sr 2AlTaO6)0.7 (LSAT) substrates, this transition is lost. It has been reported in the literature that depositing NSMO on (110)-oriented STO allows for the transition to reemerge due to the partial epitaxial growth, where the NSMO film is strained along the [001] surface axis and partially relaxed along the [11¯0] surface axis. This allows the NSMO film enough

  11. Hybrid dextran-iron oxide thin films deposited by laser techniques for biomedical applications

    Energy Technology Data Exchange (ETDEWEB)

    Predoi, D.; Ciobanu, C.S. [National Institute for Physics of Materials, P.O. Box MG 07, Bucharest, Magurele (Romania); Radu, M.; Costache, M.; Dinischiotu, A. [Molecular Biology Center, University of Bucharest, 91-95 Splaiul Independentei, 76201, Bucharest 5 (Romania); Popescu, C.; Axente, E.; Mihailescu, I.N. [National Institute for Lasers, Plasma and Radiations Physics, P. O. Box MG 36, 77125 Bucharest (Romania); Gyorgy, E., E-mail: egyorgy@cin2.es [National Institute for Lasers, Plasma and Radiations Physics, P. O. Box MG 36, 77125 Bucharest (Romania); Consejo Superior de Investigaciones Cientificas, Centre d' Investigacions en Nanociencia i Nanotecnologia (CSIC-CIN2), Campus UAB, 08193 Bellaterra (Spain)

    2012-02-01

    Iron oxide nanoparticles were prepared by chemical co-precipitation method. The nanoparticles were mixed with dextran in distilled water. The obtained solutions were frozen in liquid nitrogen and used as targets during matrix assisted pulsed laser evaporation for the growth of hybrid, iron oxide nanoparticles-dextran thin films. Fourier Transform Infrared Spectroscopy and X-ray diffraction investigations revealed that the obtained films preserve the structure and composition of the initial, non-irradiated iron oxide-dextran composite material. The biocompatibility of the iron oxide-dextran thin films was demonstrated by 3-(4.5 dimethylthiazol-2yl)-2.5-diphenyltetrazolium bromide-based colorimetric assay, using human liver hepatocellular carcinoma cells. - Highlights: Black-Right-Pointing-Pointer Hybrid, dextran-iron oxide nanoparticles and thin films. Black-Right-Pointing-Pointer Laser immobilization. Black-Right-Pointing-Pointer Biocompatibility of dextran-iron oxide nanoparticles.

  12. Hybrid dextran-iron oxide thin films deposited by laser techniques for biomedical applications

    International Nuclear Information System (INIS)

    Predoi, D.; Ciobanu, C.S.; Radu, M.; Costache, M.; Dinischiotu, A.; Popescu, C.; Axente, E.; Mihailescu, I.N.; Gyorgy, E.

    2012-01-01

    Iron oxide nanoparticles were prepared by chemical co-precipitation method. The nanoparticles were mixed with dextran in distilled water. The obtained solutions were frozen in liquid nitrogen and used as targets during matrix assisted pulsed laser evaporation for the growth of hybrid, iron oxide nanoparticles-dextran thin films. Fourier Transform Infrared Spectroscopy and X-ray diffraction investigations revealed that the obtained films preserve the structure and composition of the initial, non-irradiated iron oxide-dextran composite material. The biocompatibility of the iron oxide-dextran thin films was demonstrated by 3-(4.5 dimethylthiazol-2yl)-2.5-diphenyltetrazolium bromide-based colorimetric assay, using human liver hepatocellular carcinoma cells. - Highlights: ► Hybrid, dextran-iron oxide nanoparticles and thin films. ► Laser immobilization. ► Biocompatibility of dextran-iron oxide nanoparticles.

  13. Inhibitory Effect Evaluation of Glycerol-Iron Oxide Thin Films on Methicillin-Resistant Staphylococcus aureus

    Directory of Open Access Journals (Sweden)

    C. L. Popa

    2015-01-01

    Full Text Available The main purpose of this study was to evaluate the inhibitory effect of glycerol- iron oxide thin films on Methicillin-Resistant Staphylococcus aureus (MRSA. Our results suggest that glycerol-iron oxide thin films could be used in the future for various biomedical and pharmaceutical applications. The glycerol-iron oxide thin films have been deposited by spin coating method on a silicon (111 substrate. The structural properties have been studied by X-ray diffraction (XRD and scanning electron spectroscopy (SEM. The XRD investigations of the prepared thin films demonstrate that the crystal structure of glycerol-iron oxide nanoparticles was not changed after spin coating deposition. On the other hand, the SEM micrographs suggest that the size of the glycerol-iron oxide microspheres increased with the increase of glycerol exhibiting narrow size distributions. The qualitative depth profile of glycerol-iron oxide thin films was identified by glow discharge optical emission spectroscopy (GDOES. The GDOES spectra revealed the presence of the main elements: Fe, O, C, H, and Si. The antimicrobial activity of glycerol-iron oxide thin films was evaluated by measuring the zone of inhibition. After 18 hours of incubation at 37°C, the diameters of the zones of complete inhibition have been measured obtaining values around 25 mm.

  14. Self-organised nano-structuring of thin oxide-films under swift heavy ion bombardment

    International Nuclear Information System (INIS)

    Bolse, Wolfgang

    2006-01-01

    Surface instabilities and the resulting self-organisation processes play an important role in nano-technology since they allow for large-array nano-structuring. We have recently found that the occurrence of such instabilities in thin film systems can be triggered by energetic ion bombardment and the subsequent self-assembly of the surface can be nicely controlled by fine-tuning of the irradiation conditions. The role of the ion in such processes is of double nature: If the instability is latently present already in the virgin sample, but self-assembly cannot take place because of kinetic barriers, the ion impact may just supply the necessary atomic mobility. On the other hand, the surface may become instable due to the ion beam induced material modifications and further irradiation then results in its reorganisation. In the present paper, we will review recently observed nano-scale self-organisation processes in thin oxide-films induced by the irradiation with swift heavy ions (SHI) at some MeV/amu energies. The first example is about SHI induced dewetting, which is driven by capillary forces already present in the as-deposited samples. The achieved dewetting pattern show an amazing similarity to those observed for liquid polymer films on Si, although in the present case the samples were kept at 80 K and hence have never reached their melting point. The second example is about self-organised lamellae formation driven by planar stresses, which are induced by SHI bombardment under grazing incidence and result in a surface instability and anisotropic plastic deformation (hammering effect). Taking advantage of these effects and modifying the irradiation procedure, we were able to generate more complex structures like NiO-'nano-towers' of 2 μm height and 200 nm in diameter

  15. Thin films of metal oxides on metal single crystals: Structure and growth by scanning tunneling microscopy

    International Nuclear Information System (INIS)

    Galloway, H.C.

    1995-12-01

    Detailed studies of the growth and structure of thin films of metal oxides grown on metal single crystal surfaces using Scanning Tunneling Microscopy (STM) are presented. The oxide overlayer systems studied are iron oxide and titanium oxide on the Pt(III) surface. The complexity of the metal oxides and large lattice mismatches often lead to surface structures with large unit cells. These are particularly suited to a local real space technique such as scanning tunneling microscopy. In particular, the symmetry that is directly observed with the STM elucidates the relationship of the oxide overlayers to the substrate as well as distinguishing, the structures of different oxides

  16. Surface and sub-surface thermal oxidation of thin ruthenium films

    Energy Technology Data Exchange (ETDEWEB)

    Coloma Ribera, R.; Kruijs, R. W. E. van de; Yakshin, A. E.; Bijkerk, F. [MESA+ Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500 AE Enschede (Netherlands); Kokke, S.; Zoethout, E. [FOM Dutch Institute for Fundamental Energy Research (DIFFER), P.O. Box 1207, 3430 BE Nieuwegein (Netherlands)

    2014-09-29

    A mixed 2D (film) and 3D (nano-column) growth of ruthenium oxide has been experimentally observed for thermally oxidized polycrystalline ruthenium thin films. Furthermore, in situ x-ray reflectivity upon annealing allowed the detection of 2D film growth as two separate layers consisting of low density and high density oxides. Nano-columns grow at the surface of the low density oxide layer, with the growth rate being limited by diffusion of ruthenium through the formed oxide film. Simultaneously, with the growth of the columns, sub-surface high density oxide continues to grow limited by diffusion of oxygen or ruthenium through the oxide film.

  17. Electron irradiation effect on the reverse phase transformation temperatures in TiNi shape memory alloy thin films

    International Nuclear Information System (INIS)

    Wang, Z.G.; Zu, X.T.; Fu, Y.Q.; Zhu, S.; Wang, L.M.

    2005-01-01

    In this work, Ti-Ni shape memory alloy thin films were irradiated by 1.7 MeV electron with three types of fluences: 4 x 10 20 , 7 x 10 20 and 1 x 10 21 /m 2 . The influence of electron irradiation on the transformation behavior of the TiNi thin films were investigated by differential scanning calorimetry. The transformation temperatures A s and A f shifted to higher temperature after electron irradiation, the martensite was stabilized. The electron irradiation effect can be easily eliminated by one thermal cycle. The shifts of the transformation temperatures can be explained from the change of potential energy barrier and coherency energy between parent phase and martensite after irradiation

  18. As-free pnictide LaNi{sub 1-x}Sb{sub 2} thin films grown by reactive molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Retzlaff, Reiner; Buckow, Alexander; Kurian, Jose; Alff, Lambert [Institute of Materials Science, Technische Universitaet Darmstadt, Petersenstr. 23, 64287 Darmstadt (Germany)

    2012-07-01

    We use reactive molecular beam epitaxy (RMBE) as synthesis technique for the search of arsenic free pnictide superconductors. Epitaxial thin films of LaNi{sub 1-x}Sb{sub 2} were grown on (100)MgO substrates from elemental sources by simultaneous evaporation of high purity La, Ni and Sb metals by e-gun. The LaNi{sub 1-x}Sb{sub 2} thin films grow epitaxially and are (00l) oriented with high crystalline quality, as evident from RHEED and X-Ray diffraction studies. The Ni deficient LaNi{sub 1-x}Sb{sub 2} thin films show metallic behavior with a room temperature resistivity of 110 {mu}{Omega} cm, while the stoichiometric compound is a semiconductor/insulator. The isostructural compound with Bi as pnictide shows a superconducting transition with a T{sub C}(0) of 3.1 K.

  19. From two-dimensional graphene oxide to three-dimensional honeycomb-like Ni3S2@graphene oxide composite: insight into structure and electrocatalytic properties

    Science.gov (United States)

    Wei, Xinting; Li, Yueqiang; Xu, Wenli; Zhang, Kaixuan; Yin, Jie; Shi, Shaozhen; Wei, Jiazhen; Di, Fangfang; Guo, Junxue; Wang, Can; Chu, Chaofan; Sui, Ning; Chen, Baoli; Zhang, Yingtian; Hao, Hongguo; Zhang, Xianxi; Zhao, Jinsheng; Zhou, Huawei; Wang, Shuhao

    2017-12-01

    Three-dimensional (3D) graphene composites have drawn increasing attention in energy storage/conversion applications due to their unique structures and properties. Herein, we synthesized 3D honeycomb-like Ni3S2@graphene oxide composite (3D honeycomb-like Ni3S2@GO) by a one-pot hydrothermal method. We found that positive charges of Ni2+ and negative charges of NO3- in Ni(NO3)2 induced a transformation of graphene oxide with smooth surface into graphene oxide with wrinkled surface (w-GO). The w-GO in the mixing solution of Ni(NO3)2/thioacetamide/H2O evolved into 3D honeycomb-like Ni3S2@GO in solvothermal process. The GO effectively inhibited the aggregation of Ni3S2 nanoparticles. Photoelectrochemical cells based on 3D Ni3S2@GO synthesized at 60 mM l-1 Ni(NO3)2 exhibited the best energy conversion efficiency. 3D Ni3S2@GO had smaller charge transfer resistance and larger exchange current density than pure Ni3S2 for iodine reduction reaction. The cyclic stability of 3D honeycomb-like Ni3S2@GO was good in the iodine electrolyte. Results are of great interest for fundamental research and practical applications of 3D GO and its composites in solar water-splitting, artificial photoelectrochemical cells, electrocatalysts and Li-S or Na-S batteries.

  20. Method of depositing thin films of high temperature Bi-Sr-Ca-Cu-O-based ceramic oxide superconductors

    International Nuclear Information System (INIS)

    Budd, K.D.

    1991-01-01

    This patent describes a method. It comprises preparing a liquid precursor of a Bi-Sr-Ca-Cu-O- based ceramic oxide superconductor phase, wherein the liquid precursor comprises an alkoxyalkanol, copper acrylate, strontium acrylate, bismuth nitrate, and calcium nitrate, wherein the liquid precursor has a cation ratio sufficient to form the desired stoichiometry in the ceramic oxide superconductor phase when the liquid precursor is heated to a temperature and for a time sufficient to provide the desired ceramic oxide superconductor phase, and wherein the copper acrylate, strontium acrylate, bismuth nitrate, and calcium nitrate are mutually soluble in the alkoxyalkanol; applying the liquid precursor to a substrate, wherein the substrate is one of an oxide ceramic, a metal selected from the group consisting of Ag and Ni, and Si; and heating the substrate in an oxygen-containing atmosphere with the liquid precursor applied thereon to a temperature and for a time sufficient to form a thin film comprising at least one Bi-Sr- Ca-Cu-O-based high temperature ceramic oxide superconductor phase

  1. Solid Oxide Fuel Cell Based Upon Colloidal Deposition of Thin Films for Lower Temperature Operation (Preprint)

    National Research Council Canada - National Science Library

    Reitz, T. L; Xiao, H

    2006-01-01

    In order to reduce the operating temperature of solid oxide fuel cells (SOFCs), anode-supported cells incorporating thin film electrolytes in conjunction with anode/electrolyte and cathode/electrolyte interlayers were studied...

  2. Crystal orientation dependent thermoelectric properties of highly oriented aluminum-doped zinc oxide thin films

    KAUST Repository

    Abutaha, Anas I.; Sarath Kumar, S. R.; Alshareef, Husam N.

    2013-01-01

    We demonstrate that the thermoelectric properties of highly oriented Al-doped zinc oxide (AZO) thin films can be improved by controlling their crystal orientation. The crystal orientation of the AZO films was changed by changing the temperature

  3. Active frequency tuning of the cantilever nanoresonator utilizing a phase transformation of NiTi thin film

    Czech Academy of Sciences Publication Activity Database

    Stachiv, Ivo; Šittner, Petr; Jeng, Y.-R.; Vokoun, David

    2017-01-01

    Roč. 19, č. 7 (2017), s. 5161-5169 ISSN 1392-8716 R&D Projects: GA ČR GC15-13174J Institutional support: RVO:68378271 Keywords : nanoresonator * resonant frequency * thin film * smart memory alloys * NiTi film Subject RIV: BM - Solid Matter Physics ; Magnetism OBOR OECD: Condensed matter physics (including formerly solid state physics, supercond.) Impact factor: 0.398, year: 2016

  4. Preparation and electric and photoelectric properties of thin deposits of Fe, Co, Ni, Cu, Ag, Au and Pd

    International Nuclear Information System (INIS)

    Heras, J.M.; Albano, E.V.; Asensio, M.C.; Viscido, L.

    1984-01-01

    The physics chemical properties of desordered metallic thin films of Fe, Co, Ni, Pd, Ag, Cu and Au are of great interest for its catalitic activity and for its application in radiation absorption of solar cells and micro electronic devices. This work has the purpose of reporting the experimental results obtained by evaporated films of these metals, which present desordered characteristics, small crystal size and high surface-volume rate. (A.C.A.S.) [pt

  5. Synthesis and Characterization of Electrodeposited C-PANI-Pd-Ni Composite Electrocatalyst for Methanol Oxidation

    Directory of Open Access Journals (Sweden)

    S. S. Mahapatra

    2014-01-01

    Full Text Available Electropolymerization of aniline at the graphite electrodes was achieved by potentiodynamic method. Electrodeposition of Pd (C-PANI-Pd and Ni (C-PANI-Ni and codeposition of Pd-Ni (C-PANI-Pd-Ni microparticles into the polyaniline (PANI film coated graphite (C-PANI were carried out under galvanostatic control. The morphology and composition of the composite electrodes were obtained using scanning electron microscopy (SEM and energy dispersive X-ray analysis (EDX techniques. The electrochemical behavior and electrocatalytic activity of the electrode were characterized using cyclic voltammetry (CV, electrochemical impedance spectroscopy (EIS, and chronoamperometric (CA methods in acidic medium. The C-PANI-Pd-Ni electrode showed an improved catalytic performance towards methanol oxidation in terms of lower onset potential, higher anodic oxidation current, greater stability, lower activation energy, and lower charge transfer resistance. The enhanced electrocatalytic activity might be due to the greater permeability of C-PANI films for methanol molecules, better dispersion of Pd-Ni microparticles into the polymer matrixes, and the synergistic effects between the dispersed metal particles and their matrixes.

  6. Strain Influence on the Oxygen Electrocatalysis of the (100)-Oriented Epitaxial La 2 NiO 4+δ Thin Films at Elevated Temperatures

    KAUST Repository

    Lee, Dongkyu; Grimaud, Alexis; Crumlin, Ethan J.; Mezghani, Khaled; Habib, Mohamed A.; Feng, Zhenxing; Hong, Wesley T.; Biegalski, Michael D.; Christen, Hans M.; Shao-Horn, Yang

    2013-01-01

    Ruddlesden-Popper materials such as La2NiO4+δ (LNO) have high activities for surface oxygen exchange kinetics promising for solid oxide fuel cells and oxygen permeation membranes. Here we report the synthesis of the (100)tetragonal-oriented epitaxial LNO thin films prepared by pulsed laser deposition. The surface oxygen exchange kinetics determined from electrochemical impedance spectroscopy (EIS) were found to increase with decreasing film thickness from 390 to 14 nm. No significant change of the surface chemistry with different film thicknesses was observed using ex situ auger electron spectroscopy (AES). Increasing volumetric strains in the LNO films at elevated temperatures determined from in situ high-resolution X-ray diffraction (HRXRD) were correlated with increasing surface exchange kinetics and decreasing film thickness. Volumetric strains may alter the formation energy of interstitial oxygen and influence on the surface oxygen exchange kinetics of the LNO films. © 2013 American Chemical Society.

  7. Strain Influence on the Oxygen Electrocatalysis of the (100)-Oriented Epitaxial La 2 NiO 4+δ Thin Films at Elevated Temperatures

    KAUST Repository

    Lee, Dongkyu

    2013-09-19

    Ruddlesden-Popper materials such as La2NiO4+δ (LNO) have high activities for surface oxygen exchange kinetics promising for solid oxide fuel cells and oxygen permeation membranes. Here we report the synthesis of the (100)tetragonal-oriented epitaxial LNO thin films prepared by pulsed laser deposition. The surface oxygen exchange kinetics determined from electrochemical impedance spectroscopy (EIS) were found to increase with decreasing film thickness from 390 to 14 nm. No significant change of the surface chemistry with different film thicknesses was observed using ex situ auger electron spectroscopy (AES). Increasing volumetric strains in the LNO films at elevated temperatures determined from in situ high-resolution X-ray diffraction (HRXRD) were correlated with increasing surface exchange kinetics and decreasing film thickness. Volumetric strains may alter the formation energy of interstitial oxygen and influence on the surface oxygen exchange kinetics of the LNO films. © 2013 American Chemical Society.

  8. Effect of plastic strain on shape memory characteristics in sputter-deposited Ti-Ni thin films

    International Nuclear Information System (INIS)

    Nomura, K.

    1995-01-01

    The plastic strain which is introduced during cooling and heating under a constant stress has an influence upon the transformation and deformation characteristics of sputter-deposited Ti-Ni shape memory alloy thin films. With increasing the accumulated plastic strain, Ms rises and recovery strain increases. The changes in such characteristics are due to the internal stress field that is formed by plastic deformation. However, the change in Ms in Ti-50.5at%Ni is larger than that in Ti-48.9at%Ni, although the plastic strain in the former is lower than that in the latter. In order to understand this point, the effective internal stresses were estimated in both alloys; the internal stress in the former is more effectively created by the introduction of plastic strain than in the latter. (orig.)

  9. Application of Ni-Oxide@TiO₂ Core-Shell Structures to Photocatalytic Mixed Dye Degradation, CO Oxidation, and Supercapacitors.

    Science.gov (United States)

    Lee, Seungwon; Lee, Jisuk; Nam, Kyusuk; Shin, Weon Gyu; Sohn, Youngku

    2016-12-20

    Performing diverse application tests on synthesized metal oxides is critical for identifying suitable application areas based on the material performances. In the present study, Ni-oxide@TiO₂ core-shell materials were synthesized and applied to photocatalytic mixed dye (methyl orange + rhodamine + methylene blue) degradation under ultraviolet (UV) and visible lights, CO oxidation, and supercapacitors. Their physicochemical properties were examined by field-emission scanning electron microscopy, X-ray diffraction analysis, Fourier-transform infrared spectroscopy, and UV-visible absorption spectroscopy. It was shown that their performances were highly dependent on the morphology, thermal treatment procedure, and TiO₂ overlayer coating.

  10. Combustion synthesized indium-tin-oxide (ITO) thin film for source/drain electrodes in all solution-processed oxide thin-film transistors

    International Nuclear Information System (INIS)

    Tue, Phan Trong; Inoue, Satoshi; Takamura, Yuzuru; Shimoda, Tatsuya

    2016-01-01

    We report combustion solution synthesized (SCS) indium-tin-oxide (ITO) thin film, which is a well-known transparent conductive oxide, for source/drain (S/D) electrodes in solution-processed amorphous zirconium-indium-zinc-oxide TFT. A redox-based combustion synthetic approach is applied to ITO thin film using acetylacetone as a fuel and metal nitrate as oxidizer. The structural and electrical properties of SCS-ITO precursor solution and thin films were systematically investigated with changes in tin concentration, indium metal precursors, and annealing conditions such as temperature, time, and ambient. It was found that at optimal conditions the SCS-ITO thin film exhibited high crystalline quality, atomically smooth surface (RMS ∝ 4.1 Aa), and low electrical resistivity (4.2 x 10 -4 Ω cm). The TFT using SCS-ITO film as the S/D electrodes showed excellent electrical properties with negligible hysteresis. The obtained ''on/off'' current ratio, subthreshold swing factor, subthreshold voltage, and field-effect mobility were 5 x 10 7 , 0.43 V/decade, 0.7 V, and 2.1 cm 2 /V s, respectively. The performance and stability of the SCS-ITO TFT are comparable to those of the sputtered-ITO TFT, emphasizing that the SCS-ITO film is a promising candidate for totally solution-processed oxide TFTs. (orig.)

  11. Cyclic oxidation behaviour of different treated CoNiCrAlY coatings

    Energy Technology Data Exchange (ETDEWEB)

    Marginean, G. [University of Applied Sciences Gelsenkirchen, Neidenburger Str. 43, 45877 Gelsenkirchen (Germany); Utu, D., E-mail: dutu@eng.upt.ro [University ' Politehnica' Timisoara, Faculty of Mechanical Engineering, Blv. Mihai Viteazu 1, 300222 Timisoara (Romania)

    2012-08-01

    High velocity oxygen fuel (HVOF) spraying method was used in order to obtain very dense and good adhesive CoNiCrAlY-coatings deposited onto nickel-based alloy. The coatings were differently treated (preoxidized, vacuum treated or electron beam irradiated) before their exposure to cyclic oxidation tests in air at 1000 Degree-Sign C for periods up to 5 h. Changes of the coatings morphology and structure were analysed by scanning electron microscopy (SEM) and X-ray diffraction technique (XRD). The surface temperature of the samples was measured during cooling, between the oxidation cycles, and finally was associated with the thickness of the grown protective oxide scale on the CoNiCrAlY-surface. The experimental results demonstrated that depending on the thickness respectively on the different structures of the grown oxide scale, the cooling rate of the sample surface will be different as well.

  12. Different magnetic properties of rhombohedral and cubic Ni2+ doped indium oxide nanomaterials

    Directory of Open Access Journals (Sweden)

    Qingbo Sun

    2011-12-01

    Full Text Available Transition metal ions doped indium oxide nanomaterials were potentially used as a kind of diluted magnetic semiconductors in transparent spintronic devices. In this paper, the influences of Ni2+ doped contents and rhombohedral or cubic crystalline structures of indium oxide on magnetic properties were investigated. We found that the magnetic properties of Ni2+ doped indium oxide could be transferred from room temperature ferromagnetisms to paramagnetic properties with increments of doped contents. Moreover, the different crystalline structures of indium oxide also greatly affected the room temperature ferromagnetisms due to different lattice constants and almost had no effects on their paramagnetic properties. In addition, both the ferromagnetic and paramagnetic properties were demonstrated to be intrinsic and not caused by impurities.

  13. Ultra-thin Oxide Membranes: Synthesis and Carrier Transport

    Science.gov (United States)

    Sim, Jai Sung

    -stoichiometry. Temperature dependence of the electrical resistivity of the nanowall showed semiconducting behavior with an activation energy different from that of TiO2 single crystals and was attributed to formation of TinO2n-1 phases after FIB processing. The CeO2 study involved high temperature conductivity studies on substrate-free self-supported nano-crystalline ceria membranes up to 800 K. Increasing conductivity with oxygen partial pressure directly opposing the behavior of thin film devices 'clamped' by substrate has been observed. This illustrate that the relaxed nature of free standing membranes, and increased surface to volume ratio enables more sensitive electrical response to oxygen adsorption which could have implications for their use in oxygen storage devices, solid oxide fuel cells, and chemical sensors. The work in this thesis advances the understanding of materials in freestanding membrane form and advances fabrication techniques that have not been explored before, having implications for sensors, actuators, SOFC, memristors, and physics of quasi-2D materials.

  14. Structural and magnetic properties of NiZn-ferrite thin films prepared by radio frequency magnetron sputtering

    International Nuclear Information System (INIS)

    Liu Yingli; Li Yuanxun; Zhang Huaiwu; Chen Daming; Mu Chunhong

    2011-01-01

    Polycrystalline NiZn-ferrite thin films were deposited on Si(100) substrate by rf magnetron sputtering, using targets with a nominal composition of Ni 0.5 Zn 0.5 Fe 2 O 4 . The effects of substrate condition, sputtering pressure, and postannealing on the structure and magnetic properties of thin films have been investigated. Our results show that the preferred orientation of the NiZn spinel film changed from (311) to (400) with increasing the Ar pressure from 0.8 to 1.6 Pa, meanwhile, the grain size also increased. Atomic force microscopy analysis indicates that perfect surface morphology of the film can be obtained at a relatively lower sputtering pressure of 1.0 Pa. The relative percentage of residual oxygen increases significantly on a condition of lower sputtering pressure, and plays an important role in film structure due to the strong molecular adsorption tendency of oxygen on the film surface during the deposition process. A thin film with a typical thickness of 1 μm, a saturation magnetization of 150 emu/cm 3 , and a coercivity of 8.8 kA/m has been obtained after annealing at 800 deg. C, which has the potential application in magnetic integrated circuits.

  15. Growth of C60 thin films on Al2O3/NiAl(100) at early stages

    Science.gov (United States)

    Hsu, S.-C.; Liao, C.-H.; Hung, T.-C.; Wu, Y.-C.; Lai, Y.-L.; Hsu, Y.-J.; Luo, M.-F.

    2018-03-01

    The growth of thin films of C60 on Al2O3/NiAl(100) at the earliest stage was studied with scanning tunneling microscopy and synchrotron-based photoelectron spectroscopy under ultrahigh-vacuum conditions. C60 molecules, deposited from the vapor onto an ordered thin film of Al2O3/NiAl(100) at 300 K, nucleated into nanoscale rectangular islands, with their longer sides parallel to direction either [010] or [001] of NiAl. The particular island shape resulted because C60 diffused rapidly, and adsorbed and nucleated preferentially on the protrusion stripes of the crystalline Al2O3 surface. The monolayer C60 film exhibited linear protrusions of height 1-3 Å, due to either the structure of the underlying Al2O3 or the lattice mismatch at the boundaries of the coalescing C60 islands; such protrusions governed also the growth of the second layer. The second layer of the C60 film grew only for a C60 coverage >0.60 ML, implying a layer-by-layer growth mode, and also ripened in rectangular shapes. The thin film of C60 was thermally stable up to 400 K; above 500 K, the C60 islands dissociated and most C60 desorbed.

  16. Metallic behavior of NiS thin film under the structural, optical, electrical and ab initio investigation frameworks

    Energy Technology Data Exchange (ETDEWEB)

    Boughalmi, R. [Unité de physique des dispositifs à semi-conducteurs, Faculté des sciences de Tunis, Tunis El Manar University, 2092 Tunis (Tunisia); Rahmani, R. [Laboratoire de Physique des Couches Minces et Matériaux pour l' Electronique (LPC2ME). Département de physique, Faculté des Sciences, Université d' Oran Es-Sénia, Oran (Algeria); Département de physique, Université des Sciences et de la Technologie d' Oran- Mohamed-Boudiaf, Oran (Algeria); Boukhachem, A., E-mail: abdelwaheb.boukhachem@laposte.net [Unité de physique des dispositifs à semi-conducteurs, Faculté des sciences de Tunis, Tunis El Manar University, 2092 Tunis (Tunisia); Amrani, B.; Driss-Khodja, K. [Laboratoire de Physique des Couches Minces et Matériaux pour l' Electronique (LPC2ME). Département de physique, Faculté des Sciences, Université d' Oran Es-Sénia, Oran (Algeria); Amlouk, M. [Unité de physique des dispositifs à semi-conducteurs, Faculté des sciences de Tunis, Tunis El Manar University, 2092 Tunis (Tunisia)

    2015-08-01

    Nickel sulfide (NiS) thin films were deposited on the glass substrates by spray pyrolysis at 250 °C using an aqueous solution which contains nickel chloride hexahydrate and thiourea as precursors. X-ray diffraction analysis confirms that the hexagonal structure is being part of P6{sub 3}/mmc space group of the deposited films with (100) preferred orientation and lattice parameters a = 3.441 Å and c = 5.320 Å. The optical properties, investigated through transmittance and reflectance measurements reveal that the direct band gap energy (Eg) is around 0.55 eV. The electrical study shows a metallic behavior of the current II-VI binary compound. This behavior regarding NiS II-VI binary sulfide was confirmed by numerical studies based on the density functional theory (DFT) were adopted. The ground state quantities, such as lattice parameter, bulk modulus and its pressure derivative as well as the elastic constants were obtained. The values are consistent with the stability of hexagonal structure. The band structure and the states densities of such material were studied. The results show that there is an agreement between experimental and simulation. - Highlights: • NiS thin films are synthesized by Spray pyrolysis. • NiS is a low band gap compound. • These films have interesting electrical properties showing a metallic behavior. • Computational study confirms the electrical measurements.

  17. Intermediate Co/Ni-base model superalloys — Thermophysical properties, creep and oxidation

    International Nuclear Information System (INIS)

    Zenk, Christopher H.; Neumeier, Steffen; Engl, Nicole M.; Fries, Suzana G.; Dolotko, Oleksandr; Weiser, Martin; Virtanen, Sannakaisa; Göken, Mathias

    2016-01-01

    The mechanical properties of γ′-strengthened Co–Ni–Al–W–Cr model superalloys extending from pure Ni-base to pure Co-base superalloys have been assessed. Differential scanning calorimetry measurements and thermodynamic calculations match well and show that the γ′ solvus temperature decreases with increasing Co-content. The γ/γ′ lattice misfit is negative on the Ni- and positive on the Co-rich side. High Ni-contents decelerate the oxidation kinetics up to a factor of 15. The creep strength of the Ni-base alloy increases by an order of magnitude with additions of Co before it deteriorates strongly upon higher additions despite an increasing γ′ volume fraction.

  18. Graphite oxide/β-Ni(OH)2 composites for application in supercapacitors

    Science.gov (United States)

    Singh, Arvinder; Chandra, Amreesh

    2013-06-01

    Graphite oxide/β-Ni(OH)2 composites have been investigated as electrode material in supercapacitors. Phase formation of electrode material is investigated using diffraction measurements. Particle shape-size studies show deposition of β-Ni(OH)2 nanoparticles on graphite oxide (GO) sheets. Electrochemical performance of GO/β-Ni(OH)2 composite in supercapacitors is discussed based on the analysis of electrochemical impedance spectroscopy (EIS), cyclic voltammetry (CV) and galvanostatic charge-discharge studies. Excellent energy density of ˜53 Wh/kg in 1M Na2SO4 aqueous electrolyte is reported at power density of ˜1364W/kg. The significance of results is discussed in the paper.

  19. Catalytic oxidation of dichloromethane over sol-gel oxides supported Pd or Ni

    International Nuclear Information System (INIS)

    Martinez; Leidy Marcela; Montes, Consuelo

    2004-01-01

    Several supported Pd or Ni catalysts were synthesized by the sol-gel method using y-alumina, silica, sulfated zirconium and sulfated titanium as carriers. The resulting catalysts were characterized by XRD and nitrogen adsorption, and evaluated in the catalytic oxidation of dichloromethane. The effect of different parameters were determined, i.e. method of synthesis, temperature and the type of support. The durability of the best catalyst (0,5% Pd impregnated over sulfated titanium) was tested between 300 degrades Celsius and 350 degrades Celsius during 48 h. Under the conditions of this study, impregnated catalysts exhibited higher activity than those prepared by cogelation. Pd loaded catalysts showed higher conversion into CO 2 and HCl. Catalyst activity also increased with increasing temperature. Y-Alumina and sulfated titanium showed good activity but the formation of CO is favored instead of CO 2 . Therefore, bifunctional catalysts, i.e. containing metallic and acid sites appear to be required for the decomposition of methylene chloride into CO 2 and HCI

  20. Ni-YSZ solid oxide fuel cell anode behavior upon redox cycling based on electrical characterization

    DEFF Research Database (Denmark)

    Klemensø, Trine; Mogensen, Mogens Bjerg

    2006-01-01

    Ni-YSZ cermets are a prevalent material used for solid oxide fuel cells. However, the cermet degrades upon redox cycling. The degradation is related to microstructural changes, but knowledge of the mechanisms has been limited. DC conductivity measurements were performed on cermets and cermets...

  1. Ni-YSZ solid oxide fuel cell anode behavior upon redox cycling based on electrical characterization

    DEFF Research Database (Denmark)

    Klemensø, Trine; Mogensen, Mogens Bjerg

    2007-01-01

    Nickel (Ni)—yttria-stabilized zirconia (YSZ) cermets are a prevalent material used for solid oxide fuel cells. The cermet degrades upon redox cycling. The degradation is related to microstructural changes, but knowledge of the mechanisms has been limited. Direct current conductivity measurements...

  2. Methane Steam Reforming over an Ni-YSZ Solid Oxide Fuel Cell Anode in Stack Configuration

    DEFF Research Database (Denmark)

    Mogensen, David; Grunwaldt, Jan-Dierk; Hendriksen, Peter Vang

    2014-01-01

    The kinetics of catalytic steam reforming of methane over an Ni-YSZ anode of a solid oxide fuel cell (SOFC) have been investigated with the cell placed in a stack configuration. In order to decrease the degree of conversion, a single cell stack with reduced area was used. Measurements were...

  3. Ni modified ceramic anodes for direct-methane solid oxide fuel cells

    Science.gov (United States)

    Xiao, Guoliang; Chen, Fanglin

    2016-01-19

    In accordance with certain embodiments of the present disclosure, a method for fabricating a solid oxide fuel cell is described. The method includes synthesizing a composition having a perovskite present therein. The method further includes applying the composition on an electrolyte support to form an anode and applying Ni to the composition on the anode.

  4. Carbon supported Pt-NiO nanoparticles for ethanol electro-oxidation in acid media

    Science.gov (United States)

    Comignani, Vanina; Sieben, Juan Manuel; Brigante, Maximiliano E.; Duarte, Marta M. E.

    2015-03-01

    In the present work, the influence of nickel oxide as a co-catalyst of Pt nanoparticles for the electro-oxidation of ethanol in the temperature range of 23-60 °C was investigated. The carbon supported nickel oxide and platinum nanoparticles were prepared by hydrothermal synthesis and microwave-assisted polyol process respectively, and characterized by XRD, EDX, TEM and ICP analysis. The electrocatalytic activity of the as-prepared materials was studied by cyclic voltammetry and chronoamperometry. Small metal nanoparticles with sizes in the range of 3.5-4.5 nm were obtained. The nickel content in the as-prepared Pt-NiO/C catalysts was between 19 and 35 at.%. The electrochemical experiments showed that the electrocatalytic activity of the Pt-NiO/C materials increase with NiO content in the entire temperature range. The apparent activation energy (Ea,app) for the overall ethanol oxidation reaction was found to decrease with NiO content (24-32 kJ mol-1 at 0.3 V), while for Pt/C the activation energy exceeds 48 kJ mol-1. The better performance of the Pt-NiO/C catalysts compared to Pt/C sample is ascribed to the activation of both the C-H and O-H bonds via oxygen-containing species adsorbed on NiO molecules and the modification of the surface electronic structure (changes in the density of states near the Fermi level).

  5. Oxidation of Ni(Pt)Si by molecular vs. atomic oxygen

    International Nuclear Information System (INIS)

    Manandhar, Sudha; Copp, Brian; Kelber, J.A.

    2008-01-01

    X-ray photoelectron spectroscopy (XPS) has been used to characterize the oxidation of a clean Ni(Pt)Si surface under two distinct conditions: exposure to a mixed flux of atomic and molecular oxygen (O + O 2 ; P O+O 2 = 5 x 10 -6 Torr) and pure molecular oxygen (O 2 ; P O 2 = 10 -5 Torr) at ambient temperatures. Formation of the clean, stoichiometric (nickel monosilicide) phase under vacuum conditions results in the formation of a surface layer enriched in PtSi. Oxidation of this surface in the presence of atomic oxygen initially results in formation of a silicon oxide overlayer. At higher exposures, kinetically limited oxidation of Pt results in Pt silicate formation. No passivation of oxygen uptake of the sample is observed for total O + O 2 exposure 4 L, at which point the average oxide/silicate overlayer thickness is 23 (3) A (uncertainty in the last digit in parentheses). In contrast, exposure of the clean Ni(Pt)Si surface to molecular oxygen only (maximum exposure: 5 x 10 5 L) results in slow growth of a silicon oxide overlayer, without silicate formation, and eventual passivation at a total average oxide thickness of 8(1) A, compared to a oxide average thickness of 17(2) A (no silicate formation) for the as-received sample (i.e., exposed to ambient.) The aggressive silicon oxidation by atomic oxygen, results in Ni-rich silicide formation in the substrate and the kinetically limited oxidation of the Pt

  6. Influence of the interface on the magnetic properties of NiZn ferrite thin films treated by proton irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Jiang, X.D. [Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou 730000 (China); Key Laboratory for Magnetism and Magnetic Materials of the Ministry of Education, Lanzhou University, Lanzhou 730000 (China); Guo, D.W. [Key Laboratory for Magnetism and Magnetic Materials of the Ministry of Education, Lanzhou University, Lanzhou 730000 (China); Zhang, C.H., E-mail: c.h.zhang@impcas.ac.cn [Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou 730000 (China); Fan, X.L.; Chai, G.Z. [Key Laboratory for Magnetism and Magnetic Materials of the Ministry of Education, Lanzhou University, Lanzhou 730000 (China); Xue, D.S., E-mail: xueds@lzu.edu.cn [Key Laboratory for Magnetism and Magnetic Materials of the Ministry of Education, Lanzhou University, Lanzhou 730000 (China)

    2015-09-01

    In order to systematically investigate the influence of the interface on the magnetic properties, polycrystalline NiZn ferrite thin films were irradiated with 60 keV proton in the dose range from 5 × 10{sup 12} to 5 × 10{sup 16} ions/cm{sup 2}. A non-destructive approach by proton irradiation was found to finely adjust the magnetic properties of polycrystalline NiZn ferrite thin films such as coercivity, perpendicular magnetic anisotropy as well as the effective g value. The coercivity is about 725 Oe for high proton dose ferrite, which is twice larger than the unirradiated one. The ferromagnetic resonance measurements indicated that perpendicular magnetic anisotropy and the effective g value increase with the irradiation dose. Our finding indicates that all modifications of these magnetic properties were associated with the change of interface due to the diffusion and the stress induced by proton irradiation. The change of the effective g value is a result of lattice expansion and the decrease of the magnetic dipole interaction between the columnar grains. This work provides a feasible way to tailor the magnetic properties of thin films by ion irradiation and promotes investigations for the stability of magnetic thin film devices in space or unclear radiation environments.

  7. Tensile strain effect in ferroelectric perovskite oxide thin films on spinel magnesium aluminum oxide substrate

    Science.gov (United States)

    Zhou, Xiaolan

    Ferroelectrics are used in FeRAM (Ferroelectric random-access memory). Currently (Pb,Zr)TiO3 is the most common ferroelectric material. To get lead-free and high performance ferroelectric material, we investigated perovskite ferroelectric oxides (Ba,Sr)TiO3 and BiFeO3 films with strain. Compressive strain has been investigated intensively, but the effects of tensile strain on the perovskite films have yet to be explored. We have deposited (Ba,Sr)TiO3, BiFeO3 and related films by pulsed laser deposition (PLD) and analyzed the films by X-ray diffractometry (XRD), atomic force microscopy (AFM), etc. To obtain inherently fully strained films, the selection of the appropriate substrates is crucial. MgAl2O4 matches best with good quality and size, yet the spinel structure has an intrinsic incompatibility to that of perovskite. We introduced a rock-salt structure material (Ni 1-xAlxO1+delta) as a buffer layer to mediate the structural mismatch for (Ba,Sr)TiO3 films. With buffer layer Ni1-xAlxO1+delta, we show that the BST films have high quality crystallization and are coherently epitaxial. AFM images show that the films have smoother surfaces when including the buffer layer, indicating an inherent compatibility between BST-NAO and NAO-MAO. In-plane Ferroelectricity measurement shows double hysteresis loops, indicating an antiferroelectric-like behavior: pinned ferroelectric domains with antiparallel alignments of polarization. The Curie temperatures of the coherent fully strained BST films are also measured. It is higher than 900°C, at least 800°C higher than that of bulk. The improved Curie temperature makes the use of BST as FeRAM feasible. We found that the special behaviors of ferroelectricity including hysteresis loop and Curie temperature are due to inherent fully tensile strain. This might be a clue of physics inside ferroelectric stain engineering. An out-of-plane ferroelectricity measurement would provide a full whole story of the tensile strain. However, a

  8. Intrinsic stress of bismuth oxide thin films: effect of vapour chopping and air ageing

    International Nuclear Information System (INIS)

    Patil, R B; Puri, R K; Puri, V

    2008-01-01

    Bismuth oxide thin films of thickness 1000 A 0 have been prepared by thermal oxidation (in air) of vacuum evaporated bismuth thin films (on glass substrate) at different oxidation temperatures and duration. Both the vapour chopped and nonchopped bismuth oxide thin films showed polycrystalline and polymorphic structure. The monoclinic bismuth oxide was found to be predominant in both the cases. The effect of vapour chopping and air exposure for 40 days on the intrinsic stress of bismuth oxide thin films has been studied. The vapour chopped films showed low (3.92 - 4.80 x 10 9 N/m 2 ) intrinsic stress than those of nonchopped bismuth oxide thin films (5.77 - 6.74 x 10 9 N/m 2 ). Intrinsic stress was found to increase due to air ageing. The effect of air ageing on the vapour chopped films was found low. The vapour chopped films showed higher packing density. Higher the packing density, lower the film will age. The process of chopping vapour flow creates films with less inhomogenety i.e. a low concentration of flaws and non-planar defects which results in lower intrinsic stress

  9. One-step synthesis of N-doped activated carbon with controllable Ni nanorods for ethanol oxidation

    International Nuclear Information System (INIS)

    Shi, Wenjuan; Gao, Haiyan; Yu, Jianguo; Jia, Miaomiao; Dai, Tangming; Zhao, Yongnan; Xu, Jingjing; Li, Guodong

    2016-01-01

    N-doped activated carbons with controllable Ni nanorods (NiNC) catalysts were fabricated by a facile one-pot method for electrocatalytic oxidation of ethanol. The effects of carbon source and Ni precursor for the different microstructures of the forming Ni are discussed in this work. The sucrose and chloride ion are the key factors for forming nanorod-like nickel catalyst. The sizes of Ni nanorods can be controlled by the reactant ratios and influence the catalytic performance for ethanol oxidation. The doped N atoms are also used to improve the catalytic performance for ethanol oxidation. The NiNC–3 catalyst with the proper content and size of Ni exhibits an improved catalytic activity toward ethanol oxidation with a 5 times current density and 16 times rate constant in comparison with the NiNC–1 catalysts. A current density of 47.5 mA cm −2 is generated on NiNC–3 electrode. Furthermore, current density retention of 80.7% suggests an excellent cyclic stability after 1500 cycle on the NiNC–3 electrode. All of these elevated performances can be attributed to the relatively uniform nanorods size, as well as the excellent electrical conductivity and stability of the carbon support.

  10. A nano-structured Ni(II)-chelidamic acid modified gold nanoparticle self-assembled electrode for electrocatalytic oxidation and determination of methanol

    Energy Technology Data Exchange (ETDEWEB)

    Gholivand, Mohammad Bagher, E-mail: mbgholivand@yahoo.com [Department of Analytical Chemistry, Faculty of Chemistry, Razi University, Kermanshah (Iran, Islamic Republic of); Azadbakht, Azadeh [Department of Chemistry, Faculty of Basic Science, Khorramabad Branch, Islamic Azad University, Khorramabad (Iran, Islamic Republic of)

    2012-10-01

    A nano-structured Ni(II)-chelidamic acid (2,6-dicarboxy-4-hydroxypyridine) film was electrodeposited on a gold nanoparticle-cysteine-gold electrode. The morphology of Ni(II)-chelidamic acid gold nanoparticle self-assembled electrode was investigated by scanning electron microscopy (SEM). Electrocatalytic oxidation of methanol on the surface of modified electrode was studied by cyclic voltammetry and chronoamperometry methods. The hydrodynamic amperometry at a rotating modified electrode at constant potential versus reference electrode was used for detection of methanol. Under optimized conditions the calibration plots are linear in the concentration range 0-50 mM with a detection limit of 15 {mu}M. The formed matrix in our work possessed a 3D porous network structure with a large effective surface area, high catalytic activity and behaved like microelectrode ensembles. The modified electrode indicated reproducible behavior and a high level stability during the experiments, making it particularly suitable for analytical purposes. - Highlights: Black-Right-Pointing-Pointer The Au electrode modified with thin Ni(II)/CHE-AuNP film shows stable and reproducible behavior. Black-Right-Pointing-Pointer Long stability and excellent electrochemical reversibility were observed. Black-Right-Pointing-Pointer This modified electrode shows excellent catalytic activity for methanol oxidation. Black-Right-Pointing-Pointer Combination of unique properties of AuNP and Ni(II)/CHE resulted in improvement of current responses.

  11. Thermoluminescent characterization of thin films of aluminium oxide submitted to beta and gamma radiation

    International Nuclear Information System (INIS)

    Villagran, E.; Escobar A, L.; Camps, E.; Gonzalez, P.R.; Martinez A, L.

    2002-01-01

    By mean of the laser ablation technique, thin films of aluminium oxide have been deposited on kapton substrates. These films present thermoluminescent response (Tl) when they are exposed to beta and gamma radiation. The brilliance curves show two peaks between 112 C and 180 C. A dose-response relationship study was realized and the Tl kinetic parameters were determined using the computerized deconvolution of the brilliance curve (CGCD). The thin films of aluminium oxide have potential applications as ultra.thin radiation dosemeters. (Author)

  12. Epitaxial thin film growth and properties of unconventional oxide superconductors. Cuprates and cobaltates

    International Nuclear Information System (INIS)

    Krockenberger, Y.

    2006-01-01

    The discovery of high-temperature superconductors has strongly driven the development of suited thin film fabrication methods of complex oxides. One way is the adaptation of molecular beam epitaxy (MBE) for the growth of oxide materials. Another approach is the use of pulsed laser deposition (PLD) which has the advantage of good stoichiometry transfer from target to the substrate. Both techniques are used within this thesis. Epitaxial thin films of new materials are of course needed for future applications. In addition, the controlled synthesis of thin film matter which can be formed far away from thermal equilibrium allows for the investigation of fundamental physical materials properties. (orig.)

  13. Epitaxial thin film growth and properties of unconventional oxide superconductors. Cuprates and cobaltates

    Energy Technology Data Exchange (ETDEWEB)

    Krockenberger, Y.

    2006-07-01

    The discovery of high-temperature superconductors has strongly driven the development of suited thin film fabrication methods of complex oxides. One way is the adaptation of molecular beam epitaxy (MBE) for the growth of oxide materials. Another approach is the use of pulsed laser deposition (PLD) which has the advantage of good stoichiometry transfer from target to the substrate. Both techniques are used within this thesis. Epitaxial thin films of new materials are of course needed for future applications. In addition, the controlled synthesis of thin film matter which can be formed far away from thermal equilibrium allows for the investigation of fundamental physical materials properties. (orig.)

  14. Epitaxial growth of fcc-CoxNi100-x thin films on MgO(110) single-crystal substrates

    International Nuclear Information System (INIS)

    Ohtake, Mitsuru; Nukaga, Yuri; Sato, Yoichi; Futamoto, Masaaki; Kirino, Fumiyoshi

    2009-01-01

    Co x Ni 100-x (x=100, 80, 20, 0 at. %) epitaxial thin films were prepared on MgO(110) single-crystal substrates heated at 300 deg. C by ultrahigh vacuum molecular beam epitaxy. The growth mechanism is discussed based on lattice strain and crystallographic defects. CoNi(110) single-crystal films with a fcc structure are obtained for all compositions. Co x Ni 100-x film growth follows the Volmer-Weber mode. X-ray diffraction analysis indicates that the out-of-plane and the in-plane lattice spacings of the Co x Ni 100-x films are in agreement within ±0.5% with the values of the respective bulk Co x Ni 100-x crystals, suggesting that the strain in the film is very small. High-resolution cross-sectional transmission microscopy shows that an atomically sharp boundary is formed between a Co(110) fcc film and a MgO(110) substrate, where periodical misfit dislocations are preferentially introduced in the film at the Co/MgO interface. The presence of such periodical misfit dislocations relieves the strain caused by the lattice mismatch between the film and the substrate.

  15. Corrosion of NiTi wires with cracked oxide layer

    Czech Academy of Sciences Publication Activity Database

    Racek, Jan; Šittner, Petr; Heller, Luděk; Pilch, Jan; Petrenec, M.; Sedlák, Petr

    2014-01-01

    Roč. 23, č. 7 (2014), s. 2659-2668 ISSN 1059-9495. [International Conference on Shape Memory and Superelastic Technologies (SMST 2013). Praha, 21.05.2013-24.05.2013] R&D Projects: GA ČR GPP108/12/P111; GA ČR GAP107/12/0800; GA MŠk(CZ) 7E11058 EU Projects: European Commission(XE) 262806 - SmartNets Institutional support: RVO:68378271 ; RVO:61388998 Keywords : bending * electrochemical corrosion tests * martensitic transformation * shape memory alloy * superelastic NiTi wires Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 0.998, year: 2014

  16. Impact of deposition rate on the structural and magnetic properties of sputtered Ni/Cu multilayer thin films

    Energy Technology Data Exchange (ETDEWEB)

    Karpuz, Ali [Karamanoglu Mehmetbey Univ., Karaman (Turkey). Dept. of Physics; Colmekci, Salih; Kockar, Hakan; Kuru, Hilal; Uckun, Mehmet [Balikesir Univ. (Turkey). Dept. of Physics

    2018-04-01

    The structural and corresponding magnetic properties of Ni/Cu films sputtered at low and high deposition rates were investigated as there is a limited number of related studies in this field. 5[Ni(10 nm)/Cu(30 nm)] multilayer thin films were deposited using two DC sputtering sources at low (0.02 nm/s) and high (0.10 nm/s) deposition rates of Ni layers. A face centered cubic phase was detected for both films. The surface of the film sputtered at the low deposition rate has a lot of micro-grains distributed uniformly and with sizes from 0.1 to 0.4 μm. Also, it has a vertical acicular morphology. At high deposition rate, the number of micro-grains considerably decreased, and some of their sizes increased up to 1 μm. The surface of the Ni/Cu multilayer deposited at the low rate has a relatively more grainy and rugged structure, whereas the surface of the film deposited at the high rate has a relatively larger lateral size of surface grains with a relatively fine morphology. Saturation magnetisation, M{sub s}, values were 90 and 138 emu/cm{sup 3} for deposition rates of 0.02 and 0.10 nm/s, respectively. Remanence, M{sub r}, values were also found to be 48 and 71 emu/cm{sup 3} for the low and high deposition rates, respectively. The coercivity, H{sub c}, values were 46 and 65 Oe for the low and high Ni deposition rates, respectively. The changes in the film surfaces provoked the changes in the H{sub c} values. The M{sub s}, M{sub r}, and H{sub c} values of the 5[Ni(10 nm)/Cu(30 nm)] films can be adjusted considering the surface morphologies and film contents caused by the different Ni deposition rates.

  17. Magnetic properties of exchange biased and of unbiased oxide/permalloy thin layers: a ferromagnetic resonance and Brillouin scattering study

    Energy Technology Data Exchange (ETDEWEB)

    Zighem, F; Roussigne, Y; Cherif, S-M; Moch, P [Laboratoire des Proprietes Mecaniques et Thermodynamiques des Materiaux, CNRS UPR 9001, Universite Paris Nord, 93430 Villetaneuse (France); Ben Youssef, J [Laboratoire de Magnetisme de Bretagne, CNRS, Universite de Bretagne Occidentale, 29285 Brest (France); Paumier, F, E-mail: fatih.zighem@cea.f [Institut Pprime, CNRS UPR 3346, Universite de Poitiers, ENSMA, 86962 Futuroscope (France)

    2010-10-13

    Microstrip ferromagnetic resonance and Brillouin scattering are used to provide a comparative determination of the magnetic parameters of thin permalloy layers interfaced with a non-magnetic (Al{sub 2}O{sub 3}) or with an antiferromagnetic oxide (NiO). It results from our microstructural study that no preferential texture is favoured in the observed polycrystalline sublayers. It is shown that the perpendicular anisotropy can be monitored using an interfacial surface energy term which is practically independent of the nature of the interface. In the interval of thicknesses investigated (5-25 nm) the saturation magnetization does not significantly differ from the reported one in bulk permalloy. In-plane uniaxial anisotropy and exchange bias anisotropy are also derived from the study of the dynamic magnetic excitations and compared with our independent evaluations using conventional magnetometry.

  18. Quantitative analysis of reflection electron energy loss spectra to determine electronic and optical properties of Fe–Ni alloy thin films

    International Nuclear Information System (INIS)

    Tahir, Dahlang; Oh, Sukh Kun; Kang, Hee Jae; Tougaard, Sven

    2016-01-01

    Highlights: • Electronic and optical properties of Fe-Ni alloy thin films grown on Si (1 0 0) were studied via quantitative analyses of reflection electron energy loss spectra (REELS). • The energy loss functions (ELF) are dominated by a plasmon peak at 23.6 eV for Fe and moves gradually to lower energies in Fe-Ni alloys towards the bulk plasmon energy of Ni at 20.5 eV. • Fe has a strong effect on the dielectric and optical properties of Fe-Ni alloy thin films even for an alloy with 72% Ni. Electronic and optical properties of Fe-Ni alloy thin films grown on Si (1 0 0) were studied via quantitative analyses of reflection electron energy loss spectra (REELS). - Abstract: Electronic and optical properties of Fe–Ni alloy thin films grown on Si (1 0 0) by ion beam sputter deposition were studied via quantitative analyses of reflection electron energy loss spectra (REELS). The analysis was carried out by using the QUASES-XS-REELS and QUEELS-ε(k,ω)-REELS softwares to determine the energy loss function (ELF) and the dielectric functions and optical properties by analyzing the experimental spectra. For Ni, the ELF shows peaks around 3.6, 7.5, 11.7, 20.5, 27.5, 67 and 78 eV. The peak positions of the ELF for Fe_2_8Ni_7_2 are similar to those of Fe_5_1Ni_4_9, even though there is a small peak shift from 18.5 eV for Fe_5_1Ni_4_9 to 18.7 eV for Fe_2_8Ni_7_2. A plot of n, k, ε_1, and ε_2 shows that the QUEELS-ε(k,ω)-REELS software for analysis of REELS spectra is useful for the study of optical properties of transition metal alloys. For Fe–Ni alloy with high Ni concentration (Fe_2_8Ni_7_2), ε_1, and ε_2 have strong similarities with those of Fe. This indicates that the presence of Fe in the Fe–Ni alloy thin films has a strong effect.

  19. Synthesis of electro-active manganese oxide thin films by plasma enhanced chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Merritt, Anna R. [Energetics Research Division, Naval Air Warfare Center Weapons Division, China Lake, CA 93555 (United States); Rajagopalan, Ramakrishnan [Department of Engineering, The Pennsylvania State University, Dubois, PA 15801 (United States); Materials Research Institute, The Pennsylvania State University, University Park, PA 16802 (United States); Carter, Joshua D. [Energetics Research Division, Naval Air Warfare Center Weapons Division, China Lake, CA 93555 (United States)

    2014-04-01

    The good stability, cyclability and high specific capacitance of manganese oxide (MnO{sub x}) has recently promoted a growing interest in utilizing MnO{sub x} in asymmetric supercapacitor electrodes. Several literature reports have indicated that thin film geometries of MnO{sub x} provide specific capacitances that are much higher than bulk MnO{sub x} powders. Plasma enhanced chemical vapor deposition (PECVD) is a versatile technique for the production of metal oxide thin films with high purity and controllable thickness. In this work, MnO{sub x} thin films deposited by PECVD from a methylcyclopentadienyl manganese tricarbonyl precursor are presented and the effect of processing conditions on the quality of MnO{sub x} films is described. The film purity and oxidation state of the MnO{sub x} films were studied by Fourier transform infrared spectroscopy and X-ray photoelectron spectroscopy. Preliminary electrochemical testing of MnO{sub x} films deposited on carbon fiber electrodes in aqueous electrolytes indicates that the PECVD synthesized films are electrochemically active. - Highlights: • Plasma enhanced chemical vapor deposition of manganese oxide thin films. • Higher plasma power and chamber pressure increase deposition rate. • Manganese oxide thin films are electrochemically active. • Best electrochemical performance observed for pure film with low stress • Lower capacitance observed at higher scan rates despite thin film geometry.

  20. Dynamic magnetization of NiZn ferrite doped FeSiAl thin films fabricated by oblique sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Zhong, Xiaoxi, E-mail: xiaoxi.zhong@gmail.com [Sichuan Province Key Laboratory of Information Materials and Devices Application, Chengdu University of Information Technology, Chengdu 610225 (China); Phuoc, Nguyen N. [Temasek Laboratories, National University of Singapore, 5A Engineering Drive 2, Singapore 117411 (Singapore); Soh, Wee Tee [Center for Superconducting and Magnetic Materials, Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117542 (Singapore); Ong, C.K. [Temasek Laboratories, National University of Singapore, 5A Engineering Drive 2, Singapore 117411 (Singapore); Center for Superconducting and Magnetic Materials, Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117542 (Singapore); Li, Lezhong [Sichuan Province Key Laboratory of Information Materials and Devices Application, Chengdu University of Information Technology, Chengdu 610225 (China)

    2017-06-15

    Highlights: • We prepared NiZn ferrite doped FeSiAl-based thin films using oblique deposition technique. • The magnetic properties of FeSiAl-based thin films were systematically studied. • Two ferromagnetic resonance peaks were observed in the permeability spectra. • The thermal stability of microwave properties of FeSiAl-based films was studied. • The thermal stability of properties we studied was relatively good. - Abstract: In this study, we comprehensively investigate the dynamic magnetic properties of FeSiAl-NiZnFeO thin films prepared by the oblique deposition method via a shorted microstrip perturbation technique. For the films with higher oblique angle and NiZn ferrite doping amount, there are two ferromagnetic resonance peaks observed in the permeability spectra, and both of the two peaks originate from FeSiAl. Furthermore, the magnetic anisotropy field H{sub K} of the ferromagnetic resonance peak at higher frequency is enhanced with increasing doping amount, which is interpreted in terms of the contribution of reinforced stress-induced anisotropy and shape anisotropy brought about by doping elements and oblique sputtering method. In addition, the thermal stability of the ferromagnetic resonance frequency f{sub FMR} of FeSiAl-NiZnFeO films with oblique angles of 35° and 45° with respect to temperature ranging from 300 K to 420 K is deteriorated with increasing ferrite doping amount, which is mainly ascribed to the influence of pair-ordering anisotropy and/or the reduction of the FeSiAl grain size.

  1. An assessment of Raman spectroscopy to detect iodine deposited on thin oxide films formed on Type 316 stainless steel

    International Nuclear Information System (INIS)

    Allen, G.C.; Tyler, J.W.

    1989-04-01

    Iodine-131 is one of the most important volatile fission product elements with respect to radiobiological impact, and the characterisation of its chemical state and distribution on reactor surfaces is required for reactor safety assessments. To this end, duplicate samples of Type 316 (17%Cr/12%Ni) stainless steel oxidised in Co 2 /CH 3 I gas mixtures and previously characterised using X-ray photoelectron spectroscopy have been examined using Raman spectroscopy. The aim is to improve our understanding of the way in which iodine is distributed throughout the oxide scale and to identify its chemical state. In this report we present Raman spectra recorded from a series of stainless steel specimens together with spectra recorded from a number of standard iodine compounds. It is demonstrated that the technique is well suited as a fingerprint method of species identification, can differentiate between the chemical state of iodine as iodide and iodate and can analyse thin oxide films (5-50 nm). Identification of iodine deposits in these oxide films at concentrations of ≤1 At% was not achieved however, there being insufficient iodine present to distinguish any peaks present from the background signal. It is concluded that local concentrations of iodine in oxide inclusions of different composition/morphology on the steel surface does not occur to any extent. (author)

  2. High-temperature oxidation of advanced FeCrNi alloy in steam environments

    Science.gov (United States)

    Elbakhshwan, Mohamed S.; Gill, Simerjeet K.; Rumaiz, Abdul K.; Bai, Jianming; Ghose, Sanjit; Rebak, Raul B.; Ecker, Lynne E.

    2017-12-01

    Alloys of iron-chromium-nickel are being explored as alternative cladding materials to improve safety margins under severe accident conditions. Our research focuses on non-destructively investigating the oxidation behavior of the FeCrNi alloy "Alloy 33" using synchrotron-based methods. The evolution and structure of oxide layer formed in steam environments were characterized using X-ray diffraction, hard X-ray photoelectron spectroscopy, X-ray fluorescence methods and scanning electron microscopy. Our results demonstrate that a compact and continuous oxide scale was formed consisting of two layers, chromium oxide and spinel phase (FeCr2O4) oxides, wherein the concentration of the FeCr2O4 phase decreased from the surface to the bulk-oxide interface.

  3. Effect of ion plating TiN on the oxidation of sputtered NiCrAlY-coated Ti3Al-Nb in air at 850-950 C

    International Nuclear Information System (INIS)

    Rizzo, F.C.; Zeng, C.; Chinese Academy of Sciences, Shenyang; Wu, W.

    1998-01-01

    A single sputtered NiCrAlY coating and a complex coating of inner ion-plated TiN and outer sputtered NiCrAlY were prepared on the intermetallic compound Ti 3 Al-Nb. Their oxidation behavior was examined at 850, 900, and 950 C in air by thermal gravimetry combined with XRD, SEM, and EDAX. The results showed that Ti 3 Al-Nb followed approximately parabolic oxidation, forming an outer thin Al 2 O 3 -rich scale and an inner TiO 2 -rich layer doped with Nb at the three temperatures. The TiO 2 -rich layer doped with Nb dominated the oxidation reaction. The single NiCrAlY coating did not follow parabolic oxidation exactly at 850 and 950 C, but oxidized approximately in a parabolic manner, because the instantaneous parabolic constants changed slightly with time. Besides the Al 2 O 3 scale, TiO 2 formed from the coating surface at the coating-substrate interface. The deterioration of the coating accelerated with increasing temperature. The NiCrAlY-TiN coating showed two-stage parabolic oxidation at 850 and 900 C, and an approximate parabolic oxidation at 950 C. The TiN layer was effective as a barrier to inhibit coating-alloy interdiffusion

  4. Effect of rare earth oxide additives on the performance of NiMH batteries

    International Nuclear Information System (INIS)

    Tanaka, Toshiki; Kuzuhara, Minoru; Watada, Masaharu; Oshitani, Masahiko

    2006-01-01

    To date, we have performed research on nickel-metal hydride (NiMH) batteries used in many applications and have found that addition of rare earth oxides to the nickel electrode and the hydrogen-storage alloy (MH) electrode improves battery performance significantly. Because heavy rare earth oxides of such as Er, Tm, Yb and Lu have remarkable properties that shift the oxygen evolution overpotentials of nickel electrodes to more noble potentials, it is possible to improve high-temperature charge efficiency of nickel-metal hydride secondary batteries by adding them to nickel electrodes. Furthermore, addition of heavy rare earth oxides to MH electrodes depresses an acceleration of the alloy corrosion and improves service life of the battery at high temperatures. Accordingly, addition of heavy rare earth oxides is effective for NiMH batteries used in high-temperature applications such as electric vehicles (EVs), hybrid vehicles (HEVs) and rapid charge devices. In this study, we discussed how the addition of heavy rare earth oxides affects NiMH battery characteristics

  5. Surface and sub-surface thermal oxidation of ruthenium thin films

    NARCIS (Netherlands)

    Coloma Ribera, R.; van de Kruijs, Robbert Wilhelmus Elisabeth; Zoethout, E.; Yakshin, Andrey; Bijkerk, Frederik

    2014-01-01

    For next generation Extreme UV photolithography, multilayer coatings may require protective capping layers against surface contamination. Ruthenium, as a low-oxidation metal, is often used as a reference material. The oxidation behaviour of Ru thin films has been studied using X-ray reflectometry

  6. On the oxidation mechanism of microcrystalline silicon thin films studied by Fourier transform infrared spectroscopy

    NARCIS (Netherlands)

    Bronneberg, A. C.; Smets, A. H. M.; Creatore, M.; M. C. M. van de Sanden,

    2011-01-01

    Insight into the oxidation mechanism of microcrystalline silicon thin films has been obtained by means of Fourier transform infrared spectroscopy. The films were deposited by using the expanding thermal plasma and their oxidation upon air exposure was followed in time. Transmission spectra were

  7. Surface and sub-surface thermal oxidation of thin ruthenium films

    NARCIS (Netherlands)

    Coloma Ribera, R.; van de Kruijs, Robbert Wilhelmus Elisabeth; Kokke, S.; Zoethout, E.; Yakshin, Andrey; Bijkerk, Frederik

    2014-01-01

    A mixed 2D (film) and 3D (nano-column) growth of ruthenium oxide has been experimentally observed for thermally oxidized polycrystalline ruthenium thin films. Furthermore, in situ x-ray reflectivity upon annealing allowed the detection of 2D film growth as two separate layers consisting of low

  8. Thin Co/Ni-based bottom pinned spin-transfer torque magnetic random access memory stacks with high annealing tolerance

    Energy Technology Data Exchange (ETDEWEB)

    Tomczak, Y., E-mail: Yoann.Tomczak@imec.be [IMEC Kapeldreef 75, B-3001 Leuven (Belgium); Department of Chemistry, KU Leuven (University of Leuven), Celestijnenlaan 200F, B-3001 Leuven (Belgium); Swerts, J.; Mertens, S.; Lin, T.; Couet, S.; Sankaran, K.; Pourtois, G.; Kim, W.; Souriau, L.; Van Elshocht, S.; Kar, G.; Furnemont, A. [IMEC Kapeldreef 75, B-3001 Leuven (Belgium); Liu, E. [Department of Chemistry, KU Leuven (University of Leuven), Celestijnenlaan 200F, B-3001 Leuven (Belgium)

    2016-01-25

    Spin-transfer torque magnetic random access memory (STT-MRAM) is considered as a replacement for next generation embedded and stand-alone memory applications. One of the main challenges in the STT-MRAM stack development is the compatibility of the stack with CMOS process flows in which thermal budgets up to 400 °C are applied. In this letter, we report on a perpendicularly magnetized MgO-based tunnel junction (p-MTJ) on a thin Co/Ni perpendicular synthetic antiferromagnetic layer with high annealing tolerance. Tunnel magneto resistance (TMR) loss after annealing occurs when the reference layer loses its perpendicular magnetic anisotropy due to reduction of the CoFeB/MgO interfacial anisotropy. A stable Co/Ni based p-MTJ stack with TMR values of 130% at resistance-area products of 9 Ω μm{sup 2} after 400 °C anneal is achieved via moment control of the Co/Ta/CoFeB reference layer. Thinning of the CoFeB polarizing layer down to 0.8 nm is the key enabler to achieve 400 °C compatibility with limited TMR loss. Thinning the Co below 0.6 nm leads to a loss of the antiferromagnetic interlayer exchange coupling strength through Ru. Insight into the thickness and moment engineering of the reference layer is displayed to obtain the best magnetic properties and high thermal stability for thin Co/Ni SAF-based STT-MRAM stacks.

  9. Bismuth iron oxide thin films using atomic layer deposition of alternating bismuth oxide and iron oxide layers

    Energy Technology Data Exchange (ETDEWEB)

    Puttaswamy, Manjunath; Vehkamäki, Marko [University of Helsinki, Department of Chemistry, P.O. Box 55, FI-00014 Helsinki (Finland); Kukli, Kaupo, E-mail: kaupo.kukli@helsinki.fi [University of Helsinki, Department of Chemistry, P.O. Box 55, FI-00014 Helsinki (Finland); University of Tartu, Institute of Physics, W. Ostwald 1, EE-50411 Tartu (Estonia); Dimri, Mukesh Chandra [National Institute of Chemical Physics and Biophysics, Akadeemia tee 23, EE-12618 Tallinn (Estonia); Kemell, Marianna; Hatanpää, Timo; Heikkilä, Mikko J. [University of Helsinki, Department of Chemistry, P.O. Box 55, FI-00014 Helsinki (Finland); Mizohata, Kenichiro [University of Helsinki, Department of Physics, P.O. Box 64, FI-00014 Helsinki (Finland); Stern, Raivo [National Institute of Chemical Physics and Biophysics, Akadeemia tee 23, EE-12618 Tallinn (Estonia); Ritala, Mikko; Leskelä, Markku [University of Helsinki, Department of Chemistry, P.O. Box 55, FI-00014 Helsinki (Finland)

    2016-07-29

    Bismuth iron oxide films with varying contributions from Fe{sub 2}O{sub 3} or Bi{sub 2}O{sub 3} were prepared using atomic layer deposition. Bismuth (III) 2,3-dimethyl-2-butoxide, was used as the bismuth source, iron(III) tert-butoxide as the iron source and water vapor as the oxygen source. The films were deposited as stacks of alternate Bi{sub 2}O{sub 3} and Fe{sub 2}O{sub 3} layers. Films grown at 140 °C to the thickness of 200–220 nm were amorphous, but crystallized upon post-deposition annealing at 500 °C in nitrogen. Annealing of films with intermittent bismuth and iron oxide layers grown to different thicknesses influenced their surface morphology, crystal structure, composition, electrical and magnetic properties. Implications of multiferroic performance were recognized in the films with the remanent charge polarization varying from 1 to 5 μC/cm{sup 2} and magnetic coercivity varying from a few up to 8000 A/m. - Highlights: • Bismuth iron oxide thin films were grown by atomic layer deposition at 140 °C. • The major phase formed in the films upon annealing at 500 °C was BiFeO{sub 3}. • BiFeO{sub 3} films and films containing excess Bi favored electrical charge polarization. • Slight excess of iron oxide enhanced saturative magnetization behavior.

  10. The reactive element effect of yttrium and yttrium silicon on high temperature oxidation of NiCrAl coating

    Science.gov (United States)

    Ramandhany, S.; Sugiarti, E.; Desiati, R. D.; Martides, E.; Junianto, E.; Prawara, B.; Sukarto, A.; Tjahjono, A.

    2018-03-01

    The microstructure formed on the bond coat affects the oxidation resistance, particularly the formation of a protective oxide layer. The adhesion of bond coat and TGO increased significantly by addition of reactive element. In the present work, the effect of yttrium and yttrium silicon as reactive element (RE) on NiCrAl coating was investigated. The NiCrAl (without RE) and NiCrAlX (X:Y or YSi) bond coating were deposited on Hastelloy C-276 substrate by High Velocity Oxygen Fuel (HVOF) method. Isothermal oxidation was carried out at 1000 °C for 100 hours. The results showed that the addition of RE could prevent the breakaway oxidation. Therefore, the coating with reactive element were more protective against high temperature oxidation. Furthermore, the oxidation rate of NiCrAlY coating was lower than NiCrAlYSi coating with the total mass change was ±2.394 mg/cm2 after 100 hours of oxidation. The thickness of oxide scale was approximately 1.18 μm consisting of duplex oxide scale of spinel NiCr2O4 in outer scale and protective α-Al2O3 in inner scale.

  11. Initial oxidation behavior of Ni{sub 3}Al (210) surface induced by supersonic oxygen molecular beam at room temperature

    Energy Technology Data Exchange (ETDEWEB)

    Xu, Ya, E-mail: XU.Ya@nims.go.jp [Hydrogen Materials Unit, National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan); Sakurai, Junya [Hydrogen Materials Unit, National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan); Teraoka, Yuden; Yoshigoe, Akitaka [Quantum Beam Science Center, Japan Atomic Energy Research Agency, 1-1-1 Kouto, Sayo-cho, Hyogo 679-5148 (Japan); Demura, Masahiko; Hirano, Toshiyuki [Hydrogen Materials Unit, National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan)

    2017-01-01

    Graphical abstract: - Highlights: • Initial oxidation of Ni{sub 3}Al (210) induced by O{sub 2} beam was investigated. • This was done using real-time synchrotron radiation XPS. • Both the Al and the Ni atoms on the surface were oxidized. • Oxidation of Al progressed much faster than that of Ni. - Abstract: The initial oxidation behavior of a clean Ni{sub 3}Al (210) surface was studied at 300 K using a supersonic O{sub 2} molecular beam (O{sub 2} SSMB) having an O{sub 2} translational energy of 2.3 eV, and real-time photoemission spectroscopy performed with high-brilliance synchrotron radiation. The evolution behaviors of the O 1s, Ni 2p, Al 2p, and Ni 3p spectra were examined during irradiation with the O{sub 2} SSMB. The spectral analysis revealed that both the Al atoms and the Ni atoms on the surface were oxidized; however, the oxidation of Al progressed much faster than that of Ni. The oxidation of Al began to occur and AlO{sub x} was formed at an oxygen coverage of 0.26 monolayer (ML) (1 ML was defined as the atomic density of the Ni{sub 3}Al (210) surface) and saturated at an oxygen coverage of 2.5 ML. In contrast, the oxidation of Ni commenced a little late at an oxygen coverage of 1.6 ML and slowly progressed to saturation, which occurred at an oxygen coverage of 4.89 ML.

  12. Effect of Zn and Ni substitution on structural, morphological and magnetic properties of tin oxide nanoparticles

    Energy Technology Data Exchange (ETDEWEB)

    Bhuvana, S. [Research and Development Centre, Bharathiar University, Coimbatore 641046, Tamilnadu (India); Department of Physics, Dr. NGP Institute of Technology, Coimbatore 641048, Tamilnadu (India); Ramalingam, H.B.; Vadivel, K. [Department of Physics, Government Arts College, Udumalpet 642126, Tamilnadu (India); Ranjith Kumar, E., E-mail: ranjueaswar@gmail.com [Department of Physics, Dr. NGP Institute of Technology, Coimbatore 641048, Tamilnadu (India); Ayesh, Ahmad I. [Department of Math., Stat. and Physics, Qatar University, Doha (Qatar)

    2016-12-01

    Structural, morphological, optical and magnetic properties of Zn and Zn–Ni co-doped tin oxide (SnO{sub 2}) nanoparticles synthesized by sol-gel method. The influence of doping concentration on phase and particle size of the nanoparticles was determined by X-ray diffraction. The XRD study reveals that the lattice constant and crystallite size of the samples decrease with the increase of doping concentration. The change in the band gap energy of SnO{sub 2} nanoparticles influenced more by doping with Zn and Ni. The external morphology and particle size were recorded by SEM and TEM. The results indicated that Ni{sup 2+} ions would uniformly substituted into the Zn{sup 2+} sites of SnO{sub 2} lattice. The substitution of Ni creates a vital change in magnetic properties that has been measured by vibrating sample magnetometer (VSM). - Highlights: • Sn{sub 2-(x+y)} Ni{sub x}Zn{sub y}O{sub 2}, (x=y=0.07 to 0.10) nano particles are prepared by simple sol gel method. • X-ray diffraction data confirms the single phase rutile tetragonal structure. • The VSM was used to confirm, the codoping of (Ni, Zn) increases the magnetic moment of the sample prepared. • Inducing ferromagnetism in sample makes it suitable for future spintronics applications.

  13. Analyzing nitrogen concentration using carrier illumination (CI) technology for DPN ultra-thin gate oxide

    International Nuclear Information System (INIS)

    Li, W.S.; Wu, Bill; Fan, Aki; Kuo, C.W.; Segovia, M.; Kek, H.A.

    2005-01-01

    Nitrogen concentration in the gate oxide plays a key role for 90 nm and below ULSI technology. Techniques like secondary ionization mass spectroscopy (SIMS) and X-ray photoelectron spectroscopy (XPS) are commonly used for understanding N concentration. This paper describes the application of the carrier illuminationTM (CI) technique to measure the nitrogen concentration in ultra-thin gate oxides. A set of ultra-thin gate oxide wafers with different DPN (decoupled plasma nitridation) treatment conditions were measured using the CI technique. The CI signal has excellent correlation with the N concentration as measured by XPS

  14. Assessing the antimicrobial activity of zinc oxide thin films using disk diffusion and biofilm reactor

    International Nuclear Information System (INIS)

    Gittard, Shaun D.; Perfect, John R.; Monteiro-Riviere, Nancy A.; Wei Wei; Jin Chunming; Narayan, Roger J.

    2009-01-01

    The electronic and chemical properties of semiconductor materials may be useful in preventing growth of microorganisms. In this article, in vitro methods for assessing microbial growth on semiconductor materials will be presented. The structural and biological properties of silicon wafers coated with zinc oxide thin films were evaluated using atomic force microscopy, X-ray photoelectron spectroscopy, and MTT viability assay. The antimicrobial properties of zinc oxide thin films were established using disk diffusion and CDC Biofilm Reactor studies. Our results suggest that zinc oxide and other semiconductor materials may play a leading role in providing antimicrobial functionality to the next-generation medical devices

  15. Transparent conductive zinc oxide basics and applications in thin film solar cells

    CERN Document Server

    Klein, Andreas; Rech, Bernd

    2008-01-01

    Zinc oxide (ZnO) belongs to the class of transparent conducting oxides which can be used as transparent electrodes in electronic devices or heated windows. In this book the material properties of, the deposition technologies for, and applications of zinc oxide in thin film solar cells are described in a comprehensive manner. Structural, morphological, optical and electronic properties of ZnO are treated in this review. The editors and authors of this book are specialists in deposition, analysis and fabrication of thin-film solar cells and especially of ZnO. This book is intended as an overview and a data collection for students, engineers and scientist.

  16. Synthetic Control of Kinetic Reaction Pathway and Cationic Ordering in High-Ni Layered Oxide Cathodes

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Dawei [Sustainable Energy Technologies Department, Brookhaven National Laboratory, Upton NY 11973 USA; Collaborative Innovation Center of Chemistry for Energy Materials, State Key Laboratory Physical Chemistry Solid Surfaces, Department of Chemistry, Xiamen University, Xiamen Fujian 361005 China; Kou, Ronghui [X-Ray Science Division, Advanced Photon Source, Argonne National Laboratory, Argonne IL 60439 USA; Ren, Yang [X-Ray Science Division, Advanced Photon Source, Argonne National Laboratory, Argonne IL 60439 USA; Sun, Cheng-Jun [X-Ray Science Division, Advanced Photon Source, Argonne National Laboratory, Argonne IL 60439 USA; Zhao, Hu [Sustainable Energy Technologies Department, Brookhaven National Laboratory, Upton NY 11973 USA; Zhang, Ming-Jian [Sustainable Energy Technologies Department, Brookhaven National Laboratory, Upton NY 11973 USA; School of Advanced Materials, Peking University Shenzhen Graduate School, Shenzhen Guangdong 518055 P. R. China; Li, Yan [Chemical Sciences and Engineering Division, Argonne National Laboratory, Argonne IL 60439 USA; Huq, Ashifia [Chemical and Engineering Materials Division, Oak Ridge National Laboratory, Oak Ridge TN 37831 USA; Ko, J. Y. Peter [The Cornell High Energy Synchrotron Source, Cornell University, Ithaca NY 14853 USA; Pan, Feng [School of Advanced Materials, Peking University Shenzhen Graduate School, Shenzhen Guangdong 518055 P. R. China; Sun, Yang-Kook [Department of Energy Engineering, Hanyang University, Seoul 133-791 South Korea; Yang, Yong [Collaborative Innovation Center of Chemistry for Energy Materials, State Key Laboratory Physical Chemistry Solid Surfaces, Department of Chemistry, Xiamen University, Xiamen Fujian 361005 China; Amine, Khalil [Chemical Sciences and Engineering Division, Argonne National Laboratory, Argonne IL 60439 USA; Bai, Jianming [National Synchrotron Light Source II, Brookhaven National Laboratory, Upton NY 11973 USA; Chen, Zonghai [Chemical Sciences and Engineering Division, Argonne National Laboratory, Argonne IL 60439 USA; Wang, Feng [Sustainable Energy Technologies Department, Brookhaven National Laboratory, Upton NY 11973 USA

    2017-08-25

    Nickel-rich layered transition metal oxides, LiNi1-x(MnCo)(x)O-2 (1-x >= 0.5), are appealing candidates for cathodes in next-generation lithium-ion batteries (LIBs) for electric vehicles and other large-scale applications, due to their high capacity and low cost. However, synthetic control of the structural ordering in such a complex quaternary system has been a great challenge, especially in the presence of high Ni content. Herein, synthesis reactions for preparing layered LiNi0.7Mn0.15Co0.15O2 (NMC71515) by solid-state methods are investigated through a combination of time-resolved in situ high-energy X-ray diffraction and absorption spectroscopy measurements. The real-time observation reveals a strong temperature dependence of the kinetics of cationic ordering in NMC71515 as a result of thermal-driven oxidation of transition metals and lithium/oxygen loss that concomitantly occur during heat treatment. Through synthetic control of the kinetic reaction pathway, a layered NMC71515 with low cationic disordering and a high reversible capacity is prepared in air. The findings may help to pave the way for designing high-Ni layered oxide cathodes for LIBs.

  17. Growth and characterization of ternary Ni, Mg–Al and Ni–Al layered double hydroxides thin films deposited by pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Birjega, R. [National Institute for Lasers, Plasma and Radiation Physics, 409 Atomistilor Str., Magurele, 76900 Bucharest (Romania); Vlad, A., E-mail: angela.vlad@gmail.com [National Institute for Lasers, Plasma and Radiation Physics, 409 Atomistilor Str., Magurele, 76900 Bucharest (Romania); Matei, A.; Ion, V.; Luculescu, C.; Dinescu, M. [National Institute for Lasers, Plasma and Radiation Physics, 409 Atomistilor Str., Magurele, 76900 Bucharest (Romania); Zavoianu, R. [University of Bucharest, Faculty of Chemistry, Department of Chemical Technology and Catalysis, 4-12 Regina Elisabeta Bd., Bucharest (Romania)

    2016-09-01

    Layered double hydroxides (LDHs) are a class of layered materials consisting of positively charged brucite-like layers and exchangeable interlayer anions. Layered double hydroxides containing a transition metal which undergoes a reversible redox reaction in the useful potential range have been proposed as electrode coating materials due to their properties of charge transport and redox catalysts in basic solutions. Ni–Al,(Ni,Mg)–Al and, as reference, non-electronically conductive Mg–Al double hydroxides thin films were obtained via pulsed laser deposition technique. The thin films were deposited on different substrates (Si, glass) by using a Nd:YAG laser (1064 nm) working at a repetition rate of 10 Hz. X-ray diffraction, Atomic Force Microscopy, Energy Dispersive X-ray spectroscopy, Fourier Transform Infra-Red Spectroscopy, Secondary Ions Mass Spectrometry, Impedance Analyzer and ellipsometry were the techniques used for the as deposited thin films investigation. The optical properties of Ni based LDH thin films and the effect of the Ni amount on the structural, morphological and optical response are evidenced. The optical band gap values, covering a domain between 3.84 eV and 4.38 eV, respond to the Ni overall concentration: the higher Ni amount the lower the band gap value. - Highlights: • Ternary Ni, Mg–Al and Ni–Al layered double hydroxides thin films were deposited. • The effect of the nickel is evidenced. • The possibility to tailor the materials accompanied by an optical response is shown.

  18. CO2 gas sensitivity of sputtered zinc oxide thin films

    Indian Academy of Sciences (India)

    TECS

    Gas sensitivity; ZnO; sputtering; XRD patterns; structure; thin films. 1. Introduction. Because zinc ... voltage and absorption properties of those fabricated films have been ... tations are useful in many physical applications. The in- plane (Hegde ...

  19. Cuprous oxide thin films prepared by thermal oxidation of copper layer. Morphological and optical properties

    Energy Technology Data Exchange (ETDEWEB)

    Karapetyan, Artak, E-mail: karapetyan@cinam.univ-mrs.fr [Aix Marseille Université, CINaM, 13288, Marseille (France); Institute for Physical Research of NAS of Armenia, Ashtarak-2 0203 (Armenia); Reymers, Anna [Russian-Armenian (Slavonic) University, H.Emin st.123, Yerevan 375051 (Armenia); Giorgio, Suzanne; Fauquet, Carole [Aix Marseille Université, CINaM, 13288, Marseille (France); Sajti, Laszlo [Laser Zentrum Hannover e.V. Hollerithallee 8, 30419 Hannover (Germany); Nitsche, Serge [Aix Marseille Université, CINaM, 13288, Marseille (France); Nersesyan, Manuk; Gevorgyan, Vladimir [Russian-Armenian (Slavonic) University, H.Emin st.123, Yerevan 375051 (Armenia); Marine, Wladimir [Aix Marseille Université, CINaM, 13288, Marseille (France)

    2015-03-15

    Structural and optical characterization of crystalline Cu{sub 2}O thin films obtained by thermal oxidation of Cu films at two different temperatures 800 °C and 900 °C are investigated in this work. X-ray diffraction measurements indicate that synthesized films consist of single Cu{sub 2}O phase without any interstitial phase and show a nano-grain structure. Scanning Electron Microscopy observations indicate that the Cu{sub 2}O films have a micro-scale roughness whereas High Resolution Transmission Electron Microscopy highlights that the nanocrystalline structure is formed by superposition of nearly spherical nanocrystals smaller than 30 nm. Photoluminescence spectra of these films exhibit at room temperature two well-resolved emission peaks at 1.34 eV due to defects energy levels and at 1.97 eV due to phonon-assisted recombination of the 1s orthoexciton in both film series. Emission characteristics depending on the laser power is deeply investigated to determine the origin of recorded emissions. Time-integrated spectra of the 1s orthoexciton emission reveals the presence of oxygen defects below the conduction band edge under non-resonant two-photon excitation using a wide range of excitations wavelengths. Optical absorption coefficients at room temperature are obtained from an accurate analysis of their transmission and reflection spectra, whereas the optical band gap energy is estimated at about 2.11 eV. Results obtained are of high relevance especially for potential applications in semiconductor devices such as solar cells, optical sources and detectors. - Highlights: • Nanostructured Cu{sub 2}O thin films were synthesized by thermal oxidation of Cu films. • The PL spectra of nanostructured thin films revealed two well-resolved emission peaks. • The PL properties were investigated under a broad range of experimental conditions. • Inter-band transition in the infrared range has been associated to V{sub Cu} and V{sub O} vacancies. • Absorption

  20. Electrical and optical properties of zinc oxide: thin films

    International Nuclear Information System (INIS)

    Zuhairusnizam Md Darus; Abdul Jalil Yeop Majlis; Anis Faridah Md Nor; Burhanuddin Kamaluddin

    1992-01-01

    Zinc oxide films have been prepared by high temperature oxidation of thermally evaporated zinc films on glass substrates. The resulting films are characterized using X-ray diffraction, optical absorption and electrical conductivity measurements. These zinc oxide films are very transparent and photoconductive

  1. Enhancing the Photovoltage of Ni/ n-Si Photoanode for Water Oxidation through a Rapid Thermal Process.

    Science.gov (United States)

    Li, Shengyang; She, Guangwei; Chen, Cheng; Zhang, Shaoyang; Mu, Lixuan; Guo, Xiangxin; Shi, Wensheng

    2018-03-14

    The Ni in the Ni/ n-Si photoanode can not only protect Si from corrosion, but also catalyze the water oxidation reaction. However, the high density of interface states at the Ni/ n-Si interface could pin the Fermi level of silicon, which will lower the Schottky barrier height of the Ni/ n-Si. As a result, a low photovoltage and consequent high onset potential of Ni/ n-Si photoanode for water oxidation were generated. In this study, the interfacial states of the Ni/ n-Si photoanodes were efficiently diminished through a rapid thermal process (RTP). Calculated from the Mott-Schottky plots, the Schottky barrier height of Ni/ n-Si was increased from 0.58 to 0.78 eV after RTP. Under the illumination of 100 mW cm -2 of the Xe lamp, the onset potential of the Ni/ n-Si photoanode for water oxidation was negatively shifted for 150 mV after RTP. Besides, the RTP-treated Ni/ n-Si photoanode exhibited a high stability during the PEC water oxidation of 8 h in 1 M KOH solution.

  2. Electronic excitation-induced structural, optical, and magnetic properties of Ni-doped HoFeO3 thin films

    International Nuclear Information System (INIS)

    Habib, Zubida; Ikram, Mohd; Mir, Sajad A.; Sultan, Khalid; Abida; Majid, Kowsar; Asokan, K.

    2017-01-01

    Present study investigates the electronic excitation-induced modifications in the structural, optical, and magnetic properties of Ni-doped HoFeO 3 thin films grown by pulsed laser deposition on LaAlO 3 substrates. Electronic excitations were induced by 200 MeV Ag 12+ ion beam. These thin films were then characterized using X-ray diffraction (XRD), atomic force microscopy (AFM), UV-Vis spectroscopy, and magnetic measurements. X-ray diffraction analysis confirms that the crystallite growth occurs in the preferred (111) orientation with orthorhombic structure. The XRD results also show that the crystallite size decreases with ion irradiation. AFM results after irradiation show significant changes in the surface roughness and morphology of these films. The optical parameters measured from absorption measurements reveal reduction in the band gap with Ni doping and enhancement of band gap after irradiation. The magnetization vs field measurement at 75 K shows enhancement in saturation magnetization after irradiation for HoFe 1-x Ni x O 3 (x = 0.1 and 0.3) films compared to HoFeO 3 film. Present study shows electronic excitation induces significant changes in the physical properties of these films. (orig.)

  3. Thin-film method-XRF determination of the composition of rare earth oxides

    International Nuclear Information System (INIS)

    Xiao Deming

    1992-01-01

    The author describes the thin-film sample preparation by precipitation-pumping filtering method and the composition of rare earth oxide materials by XRF determination. The determination limits are 0.01% to 0.17%. The coefficients of variation are in the range of 0.85% to 14.9%. The analytical results of several kinds of rare earth oxide materials show that this method can be applied to the determination of the composition of rare earth oxide mixtures

  4. Study of thin metal films and oxide materials for nanoelectronics applications

    OpenAIRE

    De Los Santos Valladares, Luis

    2012-01-01

    Appendix A Pages 132-134 have been removed from this online version of the thesis for publisher copyright reasons. These had contained page images from the cover of Nanotechnology, Vol. 21, Nov 2010 and its corresponding web alert Different types of thin metal films and oxide materials are studied for their potential application in nanoelectronics: gold and copper films, nickel nanoelectrodes, oxide nanograin superconductors, carboxyl ferromagnetic microspheres and graphene oxide...

  5. A comparative study of humidity sensing and photocatalytic applications of pure and nickel (Ni)-doped WO{sub 3} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Ramkumar, S. [Bannari Amman Institute of Technology, Department of Physics, Erode, Tamilnadu (India); Rajarajan, G. [Vidhya Mandhir Institute of Technology, Department of Physics, Erode, Tamilnadu (India)

    2017-06-15

    Nanocrystalline of pristine and nickel (Ni)-doped tungsten trioxide (WO{sub 3}) thin films was deposited by chemical bath deposition method. The concentrations of Ni ions were varied from 0 to 10 wt%. In order to improve the crystallinity of the films were annealed at 600 C for 2 h in the ambient atmosphere. X-ray diffraction results reveal that the WO{sub 3} doped with nickel crystallizes in monoclinic structure and the results are in good agreement with the standard JCPDS data (card no: 83-0951). AFM micrographs reveal that average grain size of about 27-39 nm for pure and Ni-doped WO{sub 3} thin films. In addition, the band gap of the Ni-doped WO{sub 3} nanostructures is facilely tunable by controlling the Ni contents. The humidity sensor setup was fabricated and measured for pure and Ni-doped WO{sub 3} thin film sensor with various level of RH (10-90%). The Ni-doped WO{sub 3} sensor showed fast response and high sensitivity than pure WO{sub 3}. The photocatalytic activities of the films were evaluated by degradation of methyl orange, methylene blue and phenol in an aqueous solution under visible light irradiation. The photocatalytic activity of WO{sub 3} nanostructures could be remarkably enhanced by doping the Ni impurity. (orig.)

  6. Kinetics of oxidation of H2 and reduction of H2O in Ni-YSZ based solid oxide cells

    DEFF Research Database (Denmark)

    Ebbesen, Sune Dalgaard; Mogensen, Mogens Bjerg

    2012-01-01

    Reduction of H2O and oxidation of H2 was studied in a Ni-YSZ electrode supported Solid Oxide Cells produced at DTU Energy conversion (former Risø DTU). Polarisation (i-V) and electrochemical impedance spectroscopic characterisation show that the kinetics for reduction of H 2O is slower compared...... to oxidation of H2. The kinetic differences cannot be explained by the reaction mechanisms which are similar in the two cases but are rather an effect of the thermodynamics. The preliminary analysis performed in this study show that the slow kinetic for reduction is partly related to the endothermic nature...... of the reaction, cooling the active electrode, thereby leading to slower kinetics at low current densities. Likewise, the increased kinetic for oxidation was found to be related to the exothermic nature of the reaction, heating the active electrode, and thereby leading to faster kinetics. At higher current...

  7. Structure and optical properties of nanocrystalline NiO thin film synthesized by sol-gel spin-coating method

    Energy Technology Data Exchange (ETDEWEB)

    Al-Ghamdi, A.A. [King Abdulaziz University, Faculty of Science, Physics Department, Jeddah (Saudi Arabia); Mahmoud, Waleed E., E-mail: w_e_mahmoud@yahoo.co [King Abdulaziz University, Faculty of Science, Physics Department, Jeddah (Saudi Arabia); Suez Canal University, Faculty of Science, Physics Department, Ismailia (Egypt); Yaghmour, S.J.; Al-Marzouki, F.M. [King Abdulaziz University, Faculty of Science, Physics Department, Jeddah (Saudi Arabia)

    2009-11-03

    NiO thin film was prepared by sol-gel spin-coating method. This thin film annealed at T = 600 deg. C. The structure of NiO thin film was investigated by means of X-ray diffraction (XRD) technique and scanning electron microscopy (SEM). The optical properties of the deposited film were characterized from the analysis of the experimentally recorded transmittance and reflectance data in the spectral wavelength range of 300-800 nm. The values of some important parameters of the studied films are determined, such as refractive index (n), extinction coefficient (k), optical absorption coefficient (alpha) and band energy gap (E{sub g}). According to the analysis of dispersion curves, it has been found that the dispersion data obeyed the single oscillator of the Wemple-DiDomenico model, from which the dispersion parameters and high-frequency dielectric constant were determined. In such work, from the transmission spectra, the dielectric constant (epsilon{sub i}nfinity), the third-order optical nonlinear susceptibility chi{sup (3)}, volume energy loss function (VELF) and surface energy loss function (SELF) were determined.

  8. A nanogravimmetric investigation of the charging processes on ruthenium oxide thin films and their effect on methanol oxidation

    International Nuclear Information System (INIS)

    Santos, M.C.; Cogo, L.; Tanimoto, S.T.; Calegaro, M.L.; Bulhoes, L.O.S

    2006-01-01

    The charging processes and methanol oxidation that occur during the oxidation-reduction cycles in a ruthenium oxide thin film electrode (deposited by the sol-gel method on Pt covered quartz crystals) were investigated by using cyclic voltammetry, chronoamperometry and electrochemical quartz crystal nanobalance techniques. The ruthenium oxide rutile phase structure was determined by X-ray diffraction analysis. The results obtained during the charging of rutile ruthenium oxide films indicate that in the anodic sweep the transition from Ru(II) to Ru(VI) occurs followed by proton de-intercalation. In the cathodic sweep, electron injection occurs followed by proton intercalation, leading to Ru(II). The proton intercalation/de-intercalation processes can be inferred from the mass/charge relationship which gives a slope close to 1 g mol -1 (multiplied by the Faraday constant) corresponding to the molar mass of hydrogen. From the chronoamperometric measurements, charge and mass saturation of the RuO 2 thin films was observed (440 ng cm -2 ) during the charging processes, which is related to the total number of active sites in these films. Using the electrochemical quartz crystal nanobalance technique to study the methanol oxidation reaction at these films was possible to demonstrate that bulk oxidation occurs without the formation of strongly adsorbed intermediates such as CO ads , demonstrating that Pt electrodes modified by ruthenium oxide particles can be promising catalysts for the methanol oxidation as already shown in the literature

  9. Mechanism and kinetics of the oxidation of synthetic alpha-NiS

    Directory of Open Access Journals (Sweden)

    BOYAN BOYANOV

    2008-02-01

    Full Text Available The results of an investigation of the mechanism and kinetics of the oxidation process of synthetic a-NiS are presented in this paper. The mechanism of a-NiS oxidation was investigated based on the comparative analysis of DTA–TG–DTG and XRD results, as well as the constructed phase stability diagrams (PSD for the Ni–S–O system. The kinetic investigations of the oxidation process were performed under isothermal conditions (temperature range 823–1073 K. The obtained degrees of desulfurization were used in the calculation process according to the Sharp model and the kinetic parameters, including the activation energies and the rate constants of the characteristic reactions, for the oxidation of a-NiS were determined. These results enabled the formulation of a kinetic equation for the desulfurization process: ‑ln(1−a = k1t = 27.89 exp(–9860/Tt, with an activation energy of 82±4 kJ mol-1, for the first stage of the process and –ln (1 − a = k2t = 1.177 exp(–4810/Tt, with an activation energy of 40±2 kJ mol-1, for the second stage.

  10. Effect of annealing temperature on physical properties of solution processed nickel oxide thin films

    Science.gov (United States)

    Sahoo, Pooja; Thangavel, R.

    2018-05-01

    In this report, NiO thin films were prepared at different annealing temperatures from nickel acetate precursor by sol-gel spin coating method. These films were characterized by different analytical techniques to obtain their structural, optical morphological and electrical properties using X-ray diffractometer (XRD), Field emission scanning electron microscopy (FESEM), UV-Vis NIR double beam spectrophotometer and Keithley 2450 source meter respectively. FESEM images clearly indicates the formation of a homogenous and porous films. Due to their porosity, they can be used in sensing applications. The optical absorption spectra elucidated that the films are highly transparent and have a suitable band gap which are in similar agreement with earlier reports. The current enhancement under illumination shows the suitability of nanostructured NiO thin films in its application in photovoltaics.

  11. Laser Annealing on the Surface Treatment of Thin Super Elastic NiTi Wire

    Science.gov (United States)

    Samal, S.; Heller, L.; Brajer, J.; Tyc, O.; Kadrevek, L.; Sittner, P.

    2018-05-01

    Here the aim of this research is annealing the surface of NiTi wire for shape memory alloy, super-elastic wire by solid state laser beam. The laser surface treatment was carried out on the NiTi wire locally with fast, selective, surface heat treatment that enables precisely tune the localized material properties without any precipitation. Both as drawn (hard) and straight annealing NiTi wire were considered for laser annealing with input power 3 W, with precisely focusing the laser beam height 14.3 % of the Z-axis with a spot size of 1 mm. However, straight annealing wire is more interest due to its low temperature shape setting behavior and used by companies for stent materials. The variable parameter such as speed of the laser scanning and tensile stress on the NiTi wire were optimized to observe the effect of laser response on the sample. Superelastic, straight annealed NiTi wires (d: 0.10 mm) were held prestrained at the end of the superelastic plateau (ε: 5 ∼6.5 %) above the superelastic region by a tensile machine ( Mitter: miniature testing rig) at room temperature (RT). Simultaneously, the hardness of the wires along the cross-section was performed by nano-indentation (NI) method. The hardness of the NiTi wire corresponds to phase changes were correlated with NI test. The laser induced NiTi wire shows better fatigue performance with improved 6500 cycles.

  12. Fabrication of Au/graphene oxide/Ag sandwich structure thin film and its tunable energetics and tailorable optical properties

    OpenAIRE

    Ruijin Hong; Jialin Ji; Chunxian Tao; Daohua Zhang; Dawei Zhang

    2017-01-01

    Au/graphene oxide/Ag sandwich structure thin film was fabricated. The effects of graphene oxide (GO) and bimetal on the structure and optical properties of metal silver films were investigated by X-ray diffraction (XRD), optical absorption, and Raman intensity measurements, respectively. Compared to silver thin film, Au/graphene oxide/Ag sandwich structure composite thin films were observed with wider optical absorption peak and enhanced absorption intensity. The Raman signal for Rhodamine B ...

  13. Ni And Co Segregations On Selective Surface Facets And Rational Design Of Layered Lithium Transition-metal Oxide Cathodes

    Energy Technology Data Exchange (ETDEWEB)

    Yan, Pengfei; Zheng, Jianming; Zheng, Jiaxin; Wang, Zhiguo; Teng, Gaofeng; Kuppan, Saravanan; Xiao, Jie; Chen, Guoying; Zhang, Jiguang; Wang, Chong M.; Pan, Feng

    2016-05-05

    The chemical processes occurring on the surface of cathode materials during battery cycling play a crucial role in determining battery’s performance. However, our understanding on such surface chemistry is far from clear due to the complexity of redox chemistry during battery charge/discharge. In this work, through intensive aberration corrected STEM investigation on eight layered oxide cathode materials, we report two important findings on the pristine oxides. First, Ni and Co show strong plane selectivity when building up their respective surface segregation layers (SSL). Specifically, Ni-SSL is exclusively developed on (200)m facet in Li-Mn-rich oxides (monoclinic C2/m symmetry) and (012)h facet in Mn-Ni equally rich oxides (hexagonal R-3m symmetry), while Co-SSL has a strong preference to (20-2)m plane with minimal Co-SSL also developed on some other planes in LMR cathodes. Structurally, Ni-SSLs tend to form spinel-like lattice while Co-SSLs are in a rock-salt-like structure. Secondly, by increasing Ni concentration in these layered oxides, Ni and Co SSLs can be suppressed and even eliminated. Our findings indicate that Ni and Co SSLs are tunable through controlling particle morphology and oxide composition, which opens up a new way for future rational design and synthesis of cathode materials.

  14. Hollow spiny shell of porous Ni-Mn oxides: A facile synthesis route and their application as electrode in supercapacitors

    Science.gov (United States)

    Wan, Houzhao; Lv, Lin; Peng, Lu; Ruan, Yunjun; Liu, Jia; Ji, Xiao; Miao, Ling; Jiang, Jianjun

    2015-07-01

    Hollow spiny shell Ni-Mn precursors composed of one-dimensional nanoneedles were synthesized via a simple hydrothermal method without any template. The hollow Spiny shell Ni-Mn oxides are obtained under thermal treatment at different temperatures. The BET surface areas of Ni-Mn oxides reach up to 112 and 133 m2 g-1 when calcination temperatures occur at 300 and 400 °C, respectively. The electrochemical performances of as-synthesized hollow spiny shell Ni-Mn oxides gradually die down with annealing temperatures increasing. The porous hollow spiny shell Ni-Mn oxide obtained at 300 °C delivers a maximum capacitance of 1140 F g-1 at a high current density of 1 A g-1 after 1000th cycles and the specific capacitance of Ni-Mn oxide will increase with cycling times increasing. So, porous hollow spiny shell Ni-Mn oxide obtained at low annealing temperature can form a competitive electrode material for supercapacitors.

  15. Microstructure, thickness and sheet resistivity of Cu/Ni thin film produced by electroplating technique on the variation of electrolyte temperature

    Science.gov (United States)

    Toifur, M.; Yuningsih, Y.; Khusnani, A.

    2018-03-01

    In this research, it has been made Cu/Ni thin film produced with electroplating technique. The deposition process was done in the plating bath using Cu and Ni as cathode and anode respectively. The electrolyte solution was made from the mixture of HBrO3 (7.5g), NiSO4 (100g), NiCl2 (15g), and aquadest (250 ml). Electrolyte temperature was varied from 40°C up to 80°C, to make the Ni ions in the solution easy to move to Cu cathode. The deposition was done during 2 minutes on the potential of 1.5 volt. Many characterizations were done including the thickness of Ni film, microstructure, and sheet resistivity. The results showed that at all samples Ni had attacked on the Cu substrate to form Cu/Ni. The raising of electrolyte temperature affected the increasing of Ni thickness that is the Ni thickness increase with the increasing electrolyte temperature. From the EDS spectrum, it can be informed that samples already contain Ni and Cu elements and NiO and CuO compounds. Addition element and compound are found for sample Cu/Ni resulted from 70° electrolyte temperature of Ni deposition, that are Pt and PtO2. From XRD pattern, there are several phases which have crystal structure i.e. Cu, Ni, and NiO, while CuO and PtO2 have amorphous structure. The sheet resistivity linearly decreases with the increasing electrolyte temperature.

  16. Thermochemical hydrogen generation of indium oxide thin films

    Directory of Open Access Journals (Sweden)

    Taekyung Lim

    2017-03-01

    Full Text Available Development of alternative energy resources is an urgent requirement to alleviate current energy constraints. As such, hydrogen gas is gaining attention as a future alternative energy source to address existing issues related to limited energy resources and air pollution. In this study, hydrogen generation by a thermochemical water-splitting process using two types of In2O3 thin films was investigated. The two In2O3 thin films prepared by chemical vapor deposition (CVD and sputtering deposition systems contained different numbers of oxygen vacancies, which were directly related to hydrogen generation. The as-grown In2O3 thin film prepared by CVD generated a large amount of hydrogen because of its abundant oxygen vacancies, while that prepared by sputtering had few oxygen vacancies, resulting in low hydrogen generation. Increasing the temperature of the In2O3 thin film in the reaction chamber caused an increase in hydrogen generation. The oxygen-vacancy-rich In2O3 thin film is expected to provide a highly effective production of hydrogen as a sustainable and efficient energy source.

  17. Oxidation of hydrogen peroxide by [Ni (cyclam)] in aqueous acidic ...

    Indian Academy of Sciences (India)

    Oxidation of hydrogen peroxide by tris(2,2 -bipyridine) and tris(4,4 -dimethyl-2,2 - bipyridine) complexes of osmium(III), iron(III), ruthenium(III), and nickel(III) studied in acidic and neutral aqueous media, show an inverse acid depen- dence over the pH the range 6.0–8.5.12 Kinetic mea- surements with an excess of H2O2 ...

  18. Bio-dissolution of Ni, V and Mo from spent petroleum catalyst using iron oxidizing bacteria.

    Science.gov (United States)

    Pradhan, Debabrata; Kim, Dong J; Roychaudhury, Gautam; Lee, Seoung W

    2010-01-01

    Bioleaching studies of spent petroleum catalyst containing Ni, V and Mo were carried out using iron oxidizing bacteria. Various leaching parameters such as Fe(II) concentration, pulp density, pH, temperature and particle size were studied to evaluate their effects on the leaching efficiency as well as the kinetics of dissolution. The percentage of leaching of Ni and V were higher than Mo. The leaching process followed a diffusion controlled model and the product layer was observed to be impervious due to formation of ammonium jarosite (NH(4))Fe(3)(SO(4))(2)(OH)(6). Apart from this, the lower leaching efficiency of Mo was due to a hydrophobic coating of elemental sulfur over Mo matrix in the spent catalyst. The diffusivities of the attacking species for Ni, V and Mo were also calculated.

  19. Study of the Ni-NiAl{sub 2}O{sub 4}-YSZ cermet for its possible application as an anode in solid oxide fuel cells

    Energy Technology Data Exchange (ETDEWEB)

    Reyes-Rojas, A [Centro de Investigacion en Materiales Avanzados SC, Miguel de Cervantes 120, Complejo Industrial Chihuahua, Chihuahua (Mexico); Universidad Autonoma del Estado de Mexico, Facultad de Quimica, Toluca (Mexico); Esparza-Ponce, H E [Centro de Investigacion en Materiales Avanzados SC, Miguel de Cervantes 120, Complejo Industrial Chihuahua, Chihuahua (Mexico); Reyes-Gasga, J [Universidad Nacional Autonoma de Mexico, Instituto de Fisica, Mexico DF (Mexico)

    2006-05-17

    Nanocrystalline Ni-NiAl{sub 2}O{sub 4}-YSZ cermet with a possible application as anode in solid oxide fuel cells (SOFCs) has been developed. The powders were prepared by using an alternative solid-state method that includes the use of nickel acetylacetonate as an inorganic precursor to obtain a highly porous material after sintering at 1400 {sup o}C and oxide reduction (NiO -Al{sub 2}O{sub 3}-YSZ {yields} Ni-NiAl{sub 2}O{sub 4}-YSZ) at 800 {sup o}C for 8 h in a tubular reactor furnace using 10% H{sub 2}/N{sub 2}. Eight samples with 45% Ni and 55% Al{sub 2}O{sub 3}-YSZ in concentrations of Al{sub 2}O{sub 3} oxides from 10 to 80 wt% of were mixed to obtain the cermets. The obtained material was compressed using unidirectional axial pressing and calcinations from room temperature to 800 {sup o}C. Good results were registered using a heating rate of 1 {sup o}C min{sup -1} and a special ramp to avoid anode cracking. Thermal expansion, electrical conductivity, and structural characterization by thermo-mechanical analyser (TMA) techniques/methods, the four-point probe method for conductivity, scanning electron microscopy (SEM), x-ray energy dispersive spectroscopy (EDS), x-ray diffraction (XRD), and the Rietveld method were carried out. Cermets in the range 5.5 to 11% Al{sub 2}O{sub 3} present a crystal size around 200 nm. An inversion degree (I) in the NiAl{sub 2}O{sub 4} spinel structure of the cermets Ni-NiAl{sub 2}O{sub 4}-YSZ was found after the sintering and reduction processes. Good electrical conductivity and thermal expansion coefficient were obtained for the cermet with 12 wt% of spinel structure formation.

  20. Performance of carbon nanofiber supported Pd-Ni catalysts for electro-oxidation of ethanol in alkaline medium

    Science.gov (United States)

    Maiyalagan, T.; Scott, Keith

    Carbon nanofibers (CNF) supported Pd-Ni nanoparticles have been prepared by chemical reduction with NaBH 4 as a reducing agent. The Pd-Ni/CNF catalysts were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM) and electrochemical voltammetry analysis. TEM showed that the Pd-Ni particles were quite uniformly distributed on the surface of the carbon nanofiber with an average particle size of 4.0 nm. The electro-catalytic activity of the Pd-Ni/CNF for oxidation of ethanol was examined by cyclic voltammetry (CV). The onset potential was 200 mV lower and the peak current density four times higher for ethanol oxidation for Pd-Ni/CNF compared to that for Pd/C. The effect of an increase in temperature from 20 to 60 °C had a great effect on increasing the ethanol oxidation activity.

  1. Performance of carbon nanofiber supported Pd-Ni catalysts for electro-oxidation of ethanol in alkaline medium

    Energy Technology Data Exchange (ETDEWEB)

    Maiyalagan, T.; Scott, Keith [School of Chemical Engineering and Advanced Materials, University of Newcastle upon Tyne, Newcastle upon Tyne NE1 7RU (United Kingdom)

    2010-08-15

    Carbon nanofibers (CNF) supported Pd-Ni nanoparticles have been prepared by chemical reduction with NaBH{sub 4} as a reducing agent. The Pd-Ni/CNF catalysts were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM) and electrochemical voltammetry analysis. TEM showed that the Pd-Ni particles were quite uniformly distributed on the surface of the carbon nanofiber with an average particle size of 4.0 nm. The electro-catalytic activity of the Pd-Ni/CNF for oxidation of ethanol was examined by cyclic voltammetry (CV). The onset potential was 200 mV lower and the peak current density four times higher for ethanol oxidation for Pd-Ni/CNF compared to that for Pd/C. The effect of an increase in temperature from 20 to 60 C had a great effect on increasing the ethanol oxidation activity. (author)

  2. Spallation of oxide scales from NiCrAlY overlay coatings

    International Nuclear Information System (INIS)

    Strawbridge, A.; Evans, H.E.; Ponton, C.B.

    1997-01-01

    A common method of protecting superalloys from aggressive environments at high temperatures is by plasma spraying MCrAlY (M = Fe, Ni and/or Co) to form an overlay coating. Oxidation resistance is then conferred through the development of an alumina layer. However, the use of such coatings is limited at temperatures above about 1100 C due to rapid failure of the protective oxide scales. In this study, the oxidation behaviour of air-plasma-sprayed NiCrAlY coatings has been investigated at 1200 C in 1 atm air. A protective alumina layer develops during the early stages, but breakaway oxidation occurs after prolonged exposure. The results suggest that the critical temperature drop to initiate failure is inversely proportional to the scale thickness, and an analytical model is put forward to explain this behaviour. Local surface curvature of the coating can lead to delamination within the oxide during cooling and it is shown that the largest individual pore in a spall region is the critical flaw for oxide fracture. (orig.)

  3. Chemically grown, porous, nickel oxide thin-film for electrochemical supercapacitors

    Energy Technology Data Exchange (ETDEWEB)

    Inamdar, A.I.; Kim, YoungSam; Im, Hyunsik [Department of Semiconductor Science, Dongguk University, Seoul 100-715 (Korea, Republic of); Pawar, S.M.; Kim, J.H. [Department of Materials Science and Engineering, Chonnam National University, Gwangju 500-757 (Korea, Republic of); Kim, Hyungsang [Department of Physics, Dongguk University, Seoul 100-715 (Korea, Republic of)

    2011-02-15

    A porous nickel oxide film is successfully synthesized by means of a chemical bath deposition technique from an aqueous nickel nitrate solution. The formation of a rock salt NiO structure is confirmed with XRD measurements. The electrochemical supercapacitor properties of the nickel oxide film are examined using cyclic voltammetery (CV), galvanostatic and impedance measurements in two different electrolytes, namely, NaOH and KOH. A specific capacitance of {proportional_to}129.5 F g{sup -1} in the NaOH electrolyte and {proportional_to}69.8 F g{sup -1} in the KOH electrolyte is obtained from a cyclic voltammetery study. The electrochemical stability of the NiO electrode is observed for 1500 charge-discharge cycles. The capacitative behaviour of the NiO electrode is confirmed from electrochemical impedance measurements. (author)

  4. Synthesis and characterization of electrolyte-grade 10%Gd-doped ceria thin film/ceramic substrate structures for solid oxide fuel cells

    DEFF Research Database (Denmark)

    Chourashiya, M. G.; Bharadwaj, S. R.; Jadhav, L. D.

    2010-01-01

    In the present research, spray pyrolysis technique is employed to synthesize 10%Gd-doped ceria (GDC) thin films on ceramic substrates with an intention to use the "film/substrate" structure in solid oxide fuel cells. GDC films deposited on GDC substrate showed enhanced crystallite formation....... In case of NiO-GDC composite substrate, the thickness of film was higher (∼ 13 μm) as compared to the film thickness on GDC substrate (∼ 2 μm). The relative density of the films deposited on both the substrates was of the order of 95%. The impedance measurements revealed that ionic conductivity of GDC...

  5. CO{sub 2} capture in Mg oxides doped with Fe and Ni; Captura de CO{sub 2} en oxidos de Mg dopados con Fe y Ni

    Energy Technology Data Exchange (ETDEWEB)

    Sanchez S, I. F.

    2016-07-01

    In this work the CO{sub 2} capture-desorption characteristics in Mg oxides doped with Fe and Ni obtained by the direct oxidation of Mg-Ni and Mg-Fe mixtures are presented. Mixtures of Mg-Ni and Mg-Fe in a different composition were obtained by mechanical milling in a Spex-type mill in a controlled atmosphere of ultra high purity argon at a weight / weight ratio of 4:1 powder using methanol as a lubricating agent, for 20 h. The powders obtained by mechanical milling showed as main phase, the Mg with nanocrystalline structure. Subsequently, the mixtures of Mg-Ni and Mg-Fe were oxidized within a muffle for 10 min at 600 degrees Celsius. By means of X-ray diffraction analysis, the Mg O with nano metric grain size was identified as the main phase, which was determined by the Scherrer equation. In the Mg O doped with Ni, was identified that as the Ni amount 1 to 5% by weight dispersed in the Mg O matrix was increased, the main peak intensity of the Ni phase increased, whereas in the Mg O doped with Fe was observed by XRD, that the Fe{sub 2}O{sub 3} phase was present and by increasing the amount of Fe (1 to 5% by weight) dispersed in the crystalline phase of Mg O, the intensity of this impurity also increased. Sem-EDS analysis showed that the Ni and Fe particles are dispersed homogeneously in the Mg O matrix, and the particles are porous, forming agglomerates. Through energy dispersive spectroscopy analysis, the elemental chemical composition obtained is very close to the theoretical composition. The capture of CO{sub 2} in the Mg O-1% Ni was carried out in a Parr reactor at different conditions of pressure, temperature and reaction time. Was determined that under the pressure of 0.2 MPa at 26 degrees Celsius for 1 h of reaction, the highest CO{sub 2} capture of 7.04% by weight was obtained, while in Mg O-1% Fe the CO{sub 2} capture was 6.32% by weight. The other magnesium oxides doped in 2.5 and 5% by weight Ni and Fe showed lower CO{sub 2} capture. The different stages

  6. Synthesis and electrochemical performances of LiNiCuZn oxides as anode and cathode catalyst for low temperature solid oxide fuel cell.

    Science.gov (United States)

    Jing, Y; Qin, H; Liu, Q; Singh, M; Zhu, B

    2012-06-01

    Low temperature solid oxide fuel cell (LTSOFC, 300-600 degrees C) is developed with advantages compared to conventional SOFC (800-1000 degrees C). The electrodes with good catalytic activity, high electronic and ionic conductivity are required to achieve high power output. In this work, a LiNiCuZn oxides as anode and cathode catalyst is prepared by slurry method. The structure and morphology of the prepared LiNiCuZn oxides are characterized by X-ray diffraction and field emission scanning electron microscopy. The LiNiCuZn oxides prepared by slurry method are nano Li0.28Ni0.72O, ZnO and CuO compound. The nano-crystallites are congregated to form ball-shape particles with diameter of 800-1000 nm. The LiNiCuZn oxides electrodes exhibits high ion conductivity and low polarization resistance to hydrogen oxidation reaction and oxygen reduction reaction at low temperature. The LTSOFC using the LiNiCuZn oxides electrodes demonstrates good cell performance of 1000 mW cm(-2) when it operates at 470 degrees C. It is considered that nano-composite would be an effective way to develop catalyst for LTSOFC.

  7. Thermoelectric properties of TiNiSn and Zr0.5Hf0.5NiSn thin films and superlattices with reduced thermal conductivities

    International Nuclear Information System (INIS)

    Jaeger, Tino

    2013-01-01

    Rising energy costs and enhanced CO 2 emission have moved research about thermoelectric (TE) materials into focus. The suitability of a material for usage in TE devices depends on the figure of merit ZT and is equal to α 2 σTκ -1 including Seebeck coefficient α, conductivity σ, temperature T and thermal conductivity κ. Without affecting the power factor α 2 σ, using nanostructuring, ZT should here be increased by a depressed thermal conductivity. As half-Heusler (HH) bulk materials, the TE properties of TiNiSn and Zr 0.5 Hf 0.5 NiSn have been extensively studied. Here, semiconducting TiNiSn and Zr 0.5 Hf 0.5 NiSn thin films were fabricated for the first time by dc magnetron sputtering. On MgO (100) substrates, strongly textured polycrystalline films were obtained at substrate temperatures of about 450 C. The film consisted of grains with an elongation perpendicular to the surface of 55 nm. These generated rocking curves with FWHMs of less than 1 . Structural analyses were performed by X ray diffraction (XRD). Having deposition rates of about 1 nms -1 within shortest time also films in the order of microns were fabricated. For TiNiSn the highest in-plane power factor of about 0.4 mWK -2 m -1 was measured at about 550 K. In addition, at room temperature a cross-plane thermal conductivity of 2.8 Wm -1 K -1 was observed by the differential 3ω method. Because the reduction of thermal conductivity by mass fluctuation is well-known and interface scattering of phonons is expected, superlattices (SL) were fabricated. Therefore, TiNiSn and Zr 0.5 Hf 0.5 NiSn were successively deposited. While the sputter cathodes were continuously running, for fabrication of SLs the substrates were moved from one to another. The high crystal quality of the SLs and the sharp interfaces were proven by satellite peaks (XRD) and Scanning Transmission Electron Microscopy (STEM). For a SL with a periodicity of 21 nm (TiNiSn and Zr 0.5 Hf 0.5 NiSn each 15 nm) at a temperature of 550 K an

  8. Synthesis and characterization of NiPcTSTNa(L) thin films

    Indian Academy of Sciences (India)

    Optical absorption studies of NiPcTSTNa(L) films were performed in the ... the HOMO–LUMO gap of NiPc as 2·41 eV and suggested that the orbitals next to the ..... magnitude of the electrical conductivities and feasibility of preparing these ...

  9. Enhanced catalytic hydrogenation activity of Ni/reduced graphene oxide nanocomposite prepared by a solid-state method

    Science.gov (United States)

    Li, Yizhao; Cao, Yali; Jia, Dianzeng

    2018-01-01

    A simple solid-state method has been applied to synthesize Ni/reduced graphene oxide (Ni/rGO) nanocomposite under ambient condition. Ni nanoparticles with size of 10-30 nm supported on reduced graphene oxide (rGO) nanosheets are obtained through one-pot solid-state co-reduction among nickel chloride, graphene oxide, and sodium borohydride. The Ni/rGO nanohybrid shows enhanced catalytic activity toward the reduction of p-nitrophenol (PNP) into p-aminophenol compared with Ni nanoparticles. The results of kinetic research display that the pseudo-first-order rate constant for hydrogenation reaction of PNP with Ni/rGO nanocomposite is 7.66 × 10-3 s-1, which is higher than that of Ni nanoparticles (4.48 × 10-3 s-1). It also presents superior turnover frequency (TOF, 5.36 h-1) and lower activation energy ( E a, 29.65 kJ mol-1) in the hydrogenation of PNP with Ni/rGO nanocomposite. Furthermore, composite catalyst can be magnetically separated and reused for five cycles. The large surface area and high electron transfer property of rGO support are beneficial for good catalytic performance of Ni/rGO nanocomposite. Our study demonstrates a simple approach to fabricate metal-rGO heterogeneous nanostructures with advanced functions.

  10. Formation of nano-sized pinholes array in thin Ni film on MgO(100) substrate

    Energy Technology Data Exchange (ETDEWEB)

    Lin Chuan; Naramoto, Hiroshi; Xu Yonghua; Kitazawa, Sin-iti; Narumi, Kazumasa; Sakai, Seiji

    2003-10-22

    We have grown thin Ni films with various thicknesses on polished MgO(100) single crystal substrates in an e-gun evaporation system. The morphology of the as-deposited films was characterized with atomic force microscopy. Pinholes with average diameter of 5-10 nm are found in the film with thickness from 1 to 15 nm, and pinholes array was observed in the film 10 nm thick. The origin of such structure formation is discussed in terms of the elastic strain energy.

  11. Characterization for rbs of Titanium Oxide thin films grown by Dip Coating in a coloidal suspension of nano structured Titanium Oxide

    International Nuclear Information System (INIS)

    Pedrero, E.; Vigil, E.; Zumeta, I.

    1999-01-01

    The depth of Titanium Oxide thin films grown by Dip Coating in a coloidal suspension of nano structured Titanium Oxide was characterized using Rutherford Backscattering Spectrometry. Film depths are compared in function of bath and suspension parameters

  12. A work function study of ultra-thin alumina formation on NiAl(1 1 0) surface

    International Nuclear Information System (INIS)

    Song, Weijie; Yoshitake, Michiko

    2005-01-01

    We have investigated the oxidation of NiAl(1 1 0) surface at 1020 and 670 K using ultra-violet photoelectron spectroscopy, Kelvin probe, X-ray photoelectron spectroscopy and low-energy electron diffraction. The work function change during oxidation was monitored in situ as a function of oxygen exposure. It was observed that the work function decreased by 0.6 eV after 7.9 A of well-ordered Al 2 O 3 formation on NiAl(1 1 0) at 1020 K. The formation of the interfacial dipole layer was the main factor that determined the work function and XPS binding energy shifts of Al 2 O 3 energy levels. The work function decreased by 0.8 eV after 5.1 A of amorphous Al 2 O 3 formation at 670 K. The oxide layer structure was one of Key factors that determined the work function of the Al 2 O 3 /NiAl(1 1 0) system

  13. Oxidation behavior of U-2wt%Nb, Ti, and Ni alloys in air

    International Nuclear Information System (INIS)

    Ju, J. S.; Yoo, K. S.; Jo, I. J.; Gug, D. H.; Su, H. S.; Lee, E. P.; Bang, K. S.; Kim, H. D.

    2003-01-01

    For the long term storage safety study of the metallic spent fuel, U-Nb, U-Ti, U-Ni, U-Zr, and U-Hf simulated metallic uranium alloys, known as corrosion resistant alloys, were fabricated and oxidized in oxygen gas at 200 .deg. C-300 .deg. C. Simulated metallic uranium alloys were more corrosion resistant than pure uranium metal, and corrosion resistance increases Nb, Ni, Ti in that order. The oxidation rates of uranium alloys determined and activation energy was calculated for each alloy. The matrix microstructure of the test specimens were analyzed using OM, SEM, and EPMA. It was concluded that Nb was the best acceptable alloying elements for reducing corrosion of uranium metal considered to suitable as candidate

  14. An investigation of room temperature ''oxidized'' thin films of A1 for photovoltaic applications

    International Nuclear Information System (INIS)

    Adegboyega, G.A.

    1985-12-01

    Sheet resistance and transmittance changes of thin films of A1 evaporated in high vacuum were measured during sorption of oxygen at room atmosphere. An increase of both sheet resistance and transmittance with a tendency to saturation has been observed. Evaluation of various thicknesses of the films for possible use as transparent electrode material for photovoltaic applications shows that for very thin films ( = 200 A) the ''oxidized'' films are superior. (author)

  15. Epitaxial effects in thin films of high-Tc cuprates with the K2NiF4 structure

    Science.gov (United States)

    Naito, Michio; Sato, Hisashi; Tsukada, Akio; Yamamoto, Hideki

    2018-03-01

    La2-xSrxCuO4 (LSCO) and La2-xBaxCuO4 (LBCO) have been recognized as the archetype materials of "hole-doped" high-Tc superconductors. Their crystal structures are relatively simple with a small number of constituent cation elements. In addition, the doping level can be varied by the chemical substitution over a wide range enough to obtain the full spectrum of doping-dependent electronic and magnetic properties. These attractive features have dedicated many researchers to thin-film growth of LSCO and LBCO. The critical temperature (Tc) of LSCO and LBCO is sensitive to strain as manifested by a positive pressure coefficient of Tc in bulk samples. In general, films are strained if they are grown on lattice-mismatched substrates (epitaxial strain). Early attempts (before 1997) at the growth of LSCO and LBCO films resulted in depressed Tc below 30 K as they were grown on a commonly used SrTiO3 substrate (in-plane lattice parameter asub = 3.905 Å): the in-plane lattice parameters of LSCO and LBCO are ≤3.80 Å, and hence tensile epitaxial strain is introduced. The situation was changed by the use of LaSrAlO4 substrates with a slightly shorter in-plane lattice constant (asub = 3.756 Å). On LaSrAlO4 substrates, the Tc reaches 45 K in La1.85Sr0.15CuO4, 47 K in La1.85Ba0.15CuO4, and 56 K in ozone-oxidized La2CuO4+δ films, substantially higher than the Tc's of the bulk compounds. The Tc increase in La1.85Sr0.15CuO4 films on LaSrAlO4 and decrease on SrTiO3 are semi-quantitatively in accord with the phenomenological estimations based on the anisotropic strain coefficients of Tc (dTc/dεi). In this review article, we describe the growth and properties of films of cuprates having the K2NiF4 structure, mainly focusing on the increase/decrease of Tc by epitaxial strain and quasi-stable phase formation by epitaxial stabilization. We further extract the structural and/or physical parameters controlling Tc toward microscopic understanding of the variation of Tc by epitaxial strain.

  16. A detailed TEM and SEM study of Ni-base alloys oxide scales formed in primary conditions of pressurized water reactor

    International Nuclear Information System (INIS)

    Sennour, Mohamed; Marchetti, Loic; Martin, Frantz; Perrin, Stephane; Molins, Regine; Pijolat, Michele

    2010-01-01

    The oxide film formed on nickel-based alloys in pressurized water reactors (PWR) primary coolant conditions (325 o C, aqueous media) is very thin, in the range of 1-100 nm thick, depending on the surface state and on the corrosion test duration. The nature and the structure of this scale have been investigated by Transmission Electron Microscopy (TEM) and Scanning Electron Microscopy (SEM). TEM observations revealed an oxide layer divided in two parts. The internal layer was mainly composed of a continuous spinel layer, identified as a mixed iron and nickel chromite (Ni (1-x) Fe x Cr 2 O 4 ). Moreover, nodules of Cr 2 O 3 , with a size about 5 nm, were present at the interface between this spinel and the alloy. No chromium depletion was observed in the alloy, at the alloy/oxide interface. The external layer is composed of large crystallites corresponding to a spinel structure rich in iron (Ni (1-z) Fe (2+z) O 4 ) resulting from precipitation phenomena. SEM and TEM observations showed a link between the nucleation and/or the growth of crystallites of nickel ferrite and the crystallographic orientation of the substrate. A link between the presence of surface defects and the nucleation of the crystallites was also underlined by SEM observations. Partially hydrated nickel hydroxide, was also observed by TEM in the external scale. Based on these results, some considerations about the mechanism of formation of this oxide layer are discussed.

  17. Transparent conducting oxide layers for thin film silicon solar cells

    NARCIS (Netherlands)

    Rath, J.K.; Liu, Y.; de Jong, M.M.; de Wild, J.; Schuttauf, J.A.; Brinza, M.; Schropp, R.E.I.

    2009-01-01

    Texture etching of ZnO:1%Al layers using diluted HCl solution provides excellent TCOs with crater type surface features for the front contact of superstrate type of thin film silicon solar cells. The texture etched ZnO:Al definitely gives superior performance than Asahi SnO2:F TCO in case of

  18. Functional Properties of Polydomain Ferroelectric Oxide Thin Films

    NARCIS (Netherlands)

    Houwman, Evert Pieter; Vergeer, Kurt; Koster, Gertjan; Rijnders, Augustinus J.H.M.; Nishikawa, H.; Iwata, N.; Endo, T.; Takamura, Y.; Lee, G-H.; Mele, P.

    2017-01-01

    The properties of a ferroelectric, (001)-oriented, thin film clamped to a substrate are investigated analytically and numerically. The emphasis is on the tetragonal, polydomain, ferroelectric phase, using a three domain structure, as is observed experimentally, instead of the two-domain structure

  19. Study on cobalt oxide; Sanka kobaruto ni kansuru kenkyu

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1996-11-28

    This is No.91 report of National Institute for Research in Inorganic Materials, concerning cobalt oxide. For the growth of single crystal by the Czochralski method, shape of interface and contamination of impurities are affected by the convection of molten liquid in the atmosphere. Various oxides besides CoO were investigated. Solid solutions of Cr2O3 and Al2O3 into CoO were also studied. Non-linear optic and dielectric properties of single crystals, such as Ba2NaNb5O15 and LiNbO3, were examined. It was considered that the positive electron having positive electric charge can be used for the study on the negative electric charge defect in materials. However, the positive electron itself is rare, which results in the too low efficiency of measurement. Efficiency improvement of 50 times was achieved by introducing a high performance 2D position detector, which was still low efficiency of one-hundredth compared with photoelectron spectroscopy. It was found that the aggregation structure of positive ion defects in CoO is a misunderstanding of phenomenon caused by the electronic state in bulk crystals. As a result of the study on the optical properties of f-electron transition metals, transparent ceramics with addition of various rare earth ions were described. 162 refs., 106 figs., 14 tabs.

  20. Vanadium oxide thin films deposited on silicon dioxide buffer layers by magnetron sputtering

    International Nuclear Information System (INIS)

    Chen Sihai; Ma Hong; Wang Shuangbao; Shen Nan; Xiao Jing; Zhou Hao; Zhao Xiaomei; Li Yi; Yi Xinjian

    2006-01-01

    Thin films made by vanadium oxide have been obtained by direct current magnetron sputtering method on SiO 2 buffer layers. A detailed electrical and structural characterization has been performed on the deposited films by four-point probe method and scanning electron microscopy (SEM). At room temperature, the four-point probe measurement result presents the resistance of the film to be 25 kU/sheet. The temperature coefficient of resistance is - 2.0%/K. SEM image indicates that the vanadium oxide exhibits a submicrostructure with lamella size ranging from 60 nm to 300 nm. A 32 x 32-element test microbolometer was fabricated based on the deposited thin film. The infrared response testing showed that the response was 200 mV. The obtained results allow us to conclude that the vanadium oxide thin films on SiO 2 buffer layers is suitable for uncooled focal plane arrays applications

  1. Thermoluminescent response of aluminium oxide thin films subject to gamma irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Arrieta, A.; Escobar A, L.; Camps, E.; Villagran, E.; Gonzalez, P.R

    2006-07-01

    The thermoluminescent (TL) properties of amorphous aluminium oxide thin films (thicknesses as low as 0.3 {mu}m) subjected to gamma (Co-60) irradiation are reported. Aluminium oxide thin films were prepared by laser ablation from an Al{sub 2}O{sub 3} target using a Nd: YAG laser with emission at the fundamental line. The films were exposed to gamma radiation (Co-60) in order to study their TL response. Thermoluminescence glow curves exhibited two peaks at 110 and 176 C. The high temperature peak shows good stability and 30% fading in the first 5 days after irradiation. A linear relationship between absorbed dose and the thermoluminescent response for doses span from 150 mGy to 100 Gy was observed. These results suggest that aluminium oxide thin films are suitable for detection and monitoring of gamma radiation. (Author)

  2. Observation of a hole-size-dependent energy shift of the surface-plasmon resonance in Ni antidot thin films

    Energy Technology Data Exchange (ETDEWEB)

    Fang, H.; Akinoglu, E. M.; Fumagalli, P., E-mail: paul.fumagalli@fu-berlin.de [Institut für Experimentalphysik, Freie Universität Berlin, 14195 Berlin (Germany); Caballero, B.; García-Martín, A. [IMM-Instituto de Microelectrónica de Madrid (CNM-CSIC), Isaac Newton 8, PTM, Tres Cantos, E-28760 Madrid (Spain); Papaioannou, E. Th. [Fachbereich Physik and Landesforschungszentrum OPTIMAS, Technische Universität Kaiserslautern, 67663 Kaiserslautern (Germany); Cuevas, J. C. [Departamento de Física Teórica de la Materia Condensada and Condensed Matter Physics Center (IFIMAC), Universidad Autónoma de Madrid, E-28049 Madrid (Spain); Giersig, M. [Institut für Experimentalphysik, Freie Universität Berlin, 14195 Berlin (Germany); Helmholtz Zentrum Berlin, Institute of Nanoarchitectures for Energy Conversion, 14195 Berlin (Germany)

    2015-04-13

    A combined experimental and theoretical study of the magneto-optic properties of a series of nickel antidot thin films is presented. The hole diameter varies from 869 down to 636 nm, while the lattice periodicity is fixed at 920 nm. This results in an overall increase of the polar Kerr rotation with decreasing hole diameter due to the increasing surface coverage with nickel. In addition, at photon energies of 2.7 and 3.3 eV, where surface-plasmon excitations are expected, we observe distinct features in the polar Kerr rotation not present in continuous nickel films. The spectral position of the peaks exhibits a red shift with decreasing hole size. This is explained within the context of an effective medium theory by a change in the effective dielectric function of the Ni thin films.

  3. Zinc-oxide nanorod / copper-oxide thin-film heterojunction for a nitrogen-monoxide gas sensor

    International Nuclear Information System (INIS)

    Yoo, Hwansu; Kim, Hyojin; Kim, Dojin

    2014-01-01

    A novel p - n oxide heterojunction structure was fabricated by employing n-type zinc-oxide (ZnO) nanorods grown on an indium-tin-oxide-coated glass substrate by using the hydrothermal method and a p-type copper-oxide (CuO) thin film deposited onto the ZnO nanorod array by using the sputtering method. The crystallinities and microstructures of the heterojunction materials were examined by using X-ray diffraction and scanning electron microscopy. The observed current - voltage characteristics of the p - n oxide heterojunction showed a nonlinear diode-like rectifying behavior. The effects of an oxidizing or electron acceptor gas, such as nitrogen monoxide (NO), on the ZnO nanorod/CuO thin-film heterojunction were investigated to determine the potential applications of the fabricated material for use in gas sensors. The forward current of the p - n heterojunction was remarkably reduced when NO gas was introduced into dry air at temperatures from 100 to 250 .deg. C. The NO gas response of the oxide heterojunction reached a maximum value at an operating temperature of 180 .deg. C and linearly increased as the NO gas concentration was increased from 5 to 30 ppm. The sensitivity value was observed to be as high as 170% at 180 .deg. C when biased at 2 V in the presence of 20-ppm NO. The ZnO nanorod/CuO thin-film heterojunction also exhibited a stable and repeatable response to NO gas. The experimental results suggest that the ZnO nanorod/CuO thin-film heterojunction structure may be a novel candidate for gas sensors.

  4. Zinc-oxide nanorod / copper-oxide thin-film heterojunction for a nitrogen-monoxide gas sensor

    Energy Technology Data Exchange (ETDEWEB)

    Yoo, Hwansu; Kim, Hyojin; Kim, Dojin [Chungnam National University, Daejeon (Korea, Republic of)

    2014-11-15

    A novel p - n oxide heterojunction structure was fabricated by employing n-type zinc-oxide (ZnO) nanorods grown on an indium-tin-oxide-coated glass substrate by using the hydrothermal method and a p-type copper-oxide (CuO) thin film deposited onto the ZnO nanorod array by using the sputtering method. The crystallinities and microstructures of the heterojunction materials were examined by using X-ray diffraction and scanning electron microscopy. The observed current - voltage characteristics of the p - n oxide heterojunction showed a nonlinear diode-like rectifying behavior. The effects of an oxidizing or electron acceptor gas, such as nitrogen monoxide (NO), on the ZnO nanorod/CuO thin-film heterojunction were investigated to determine the potential applications of the fabricated material for use in gas sensors. The forward current of the p - n heterojunction was remarkably reduced when NO gas was introduced into dry air at temperatures from 100 to 250 .deg. C. The NO gas response of the oxide heterojunction reached a maximum value at an operating temperature of 180 .deg. C and linearly increased as the NO gas concentration was increased from 5 to 30 ppm. The sensitivity value was observed to be as high as 170% at 180 .deg. C when biased at 2 V in the presence of 20-ppm NO. The ZnO nanorod/CuO thin-film heterojunction also exhibited a stable and repeatable response to NO gas. The experimental results suggest that the ZnO nanorod/CuO thin-film heterojunction structure may be a novel candidate for gas sensors.

  5. MWCNTs/metal (Ni, Co, Fe) oxide nanocomposite as potential material for supercapacitors application in acidic and neutral media

    CSIR Research Space (South Africa)

    Adekunle, AS

    2013-05-01

    Full Text Available Supercapacitive properties of synthesised metal oxides nanoparticles (MO where M = Ni, Co, Fe) integrated with multi-wall carbon nanotubes (MWCNT) on basal plane pyrolytic graphite electrode (BPPGE) were investigated. Successful modification...