Nonlocal continuum-based modeling of breathing mode of nanowires including surface stress and surface inertia effects

International Nuclear Information System (INIS)

Ghavanloo, Esmaeal; Fazelzadeh, S. Ahmad; Rafii-Tabar, Hashem

2014-01-01

Nonlocal and surface effects significantly influence the mechanical response of nanomaterials and nanostructures. In this work, the breathing mode of a circular nanowire is studied on the basis of the nonlocal continuum model. Both the surface elastic properties and surface inertia effect are included. Nanowires can be modeled as long cylindrical solid objects. The classical model is reformulated using the nonlocal differential constitutive relations of Eringen and Gurtin–Murdoch surface continuum elasticity formalism. A new frequency equation for the breathing mode of nanowires, including small scale effect, surface stress and surface inertia is presented by employing the Bessel functions. Numerical results are computed, and are compared to confirm the validity and accuracy of the proposed method. Furthermore, the model is used to elucidate the effect of nonlocal parameter, the surface stress, the surface inertia and the nanowire orientation on the breathing mode of several types of nanowires with size ranging from 0.5 to 4 nm. Our results reveal that the combined surface and small scale effects are significant for nanowires with diameter smaller than 4 nm.

Nonlocal continuum-based modeling of breathing mode of nanowires including surface stress and surface inertia effects

Energy Technology Data Exchange (ETDEWEB)

Ghavanloo, Esmaeal, E-mail: ghavanloo@shirazu.ac.ir [School of Mechanical Engineering, Shiraz University, Shiraz 71963-16548 (Iran, Islamic Republic of); Fazelzadeh, S. Ahmad [School of Mechanical Engineering, Shiraz University, Shiraz 71963-16548 (Iran, Islamic Republic of); Rafii-Tabar, Hashem [Department of Medical Physics and Biomedical Engineering, Research Center for Medical Nanotechnology and Tissue Engineering, Shahid Beheshti University of Medical Sciences, Evin, Tehran (Iran, Islamic Republic of); Computational Physical Sciences Research Laboratory, School of Nano-Science, Institute for Research in Fundamental Sciences (IPM), Tehran (Iran, Islamic Republic of)

2014-05-01

Nonlocal and surface effects significantly influence the mechanical response of nanomaterials and nanostructures. In this work, the breathing mode of a circular nanowire is studied on the basis of the nonlocal continuum model. Both the surface elastic properties and surface inertia effect are included. Nanowires can be modeled as long cylindrical solid objects. The classical model is reformulated using the nonlocal differential constitutive relations of Eringen and Gurtin–Murdoch surface continuum elasticity formalism. A new frequency equation for the breathing mode of nanowires, including small scale effect, surface stress and surface inertia is presented by employing the Bessel functions. Numerical results are computed, and are compared to confirm the validity and accuracy of the proposed method. Furthermore, the model is used to elucidate the effect of nonlocal parameter, the surface stress, the surface inertia and the nanowire orientation on the breathing mode of several types of nanowires with size ranging from 0.5 to 4 nm. Our results reveal that the combined surface and small scale effects are significant for nanowires with diameter smaller than 4 nm.

Electronic structure effects on stability and quantum conductance in 2D gold nanowires

International Nuclear Information System (INIS)

Kashid, Vikas; Shah, Vaishali; Salunke, H. G.

2011-01-01

In this study, we have investigated the stability and conductivity of unsupported, two-dimensional infinite gold nanowires using ab initio density functional theory (DFT). Two-dimensional ribbon-like nanowires with 1–5 rows of gold atoms in the non-periodic direction and with different possible structures have been considered. The nanowires with >2 rows of atoms exhibit dimerization, similar to finite wires, along the non-periodic direction. Our results show that in these zero thickness nanowires, the parallelogram motif is the most stable. A comparison between parallelogram- and rectangular-shaped nanowires of increasing width indicates that zero thickness (111) oriented wires have a higher stability over (100). A detailed analysis of the electronic structure, reveals that the (111) oriented structures show increased delocalization of s and p electrons in addition to a stronger delocalization of the d electrons and hence are the most stable. The density of states show that the nanowires are metallic and conducting except for the double zigzag structure, which is semiconducting. Conductance calculations show transmission for a wide range of energies in all the stable nanowires with more than two rows of atoms. The conductance channels are not purely s and have strong contributions from the d levels, and weak contributions from the p levels.

Fabrication of Nano-Micro Hybrid Structures by Replication and Surface Treatment of Nanowires

Directory of Open Access Journals (Sweden)

Yeonho Jeong

2017-07-01

Full Text Available Nanowire structures have attracted attention in various fields, since new characteristics could be acquired in minute regions. Especially, Anodic Aluminum Oxide (AAO is widely used in the fabrication of nanostructures, which has many nanosized pores and well-organized nano pattern. Using AAO as a template for replication, nanowires with a very high aspect ratio can be fabricated. Herein, we propose a facile method to fabricate a nano-micro hybrid structure using nanowires replicated from AAO, and surface treatment. A polymer resin was coated between Polyethylene terephthalate (PET and the AAO filter, roller pressed, and UV-cured. After the removal of aluminum by using NaOH solution, the nanowires aggregated to form a micropattern. The resulting structure was subjected to various surface treatments to investigate the surface behavior and wettability. As opposed to reported data, UV-ozone treatment can enhance surface hydrophobicity because the UV energy affects the nanowire surface, thus altering the shape of the aggregated nanowires. The hydrophobicity of the surface could be further improved by octadecyltrichlorosilane (OTS coating immediately after UV-ozone treatment. We thus demonstrated that the nano-micro hybrid structure could be formed in the middle of nanowire replication, and then, the shape and surface characteristics could be controlled by surface treatment.

Pattern analysis of aligned nanowires in a microchannel

International Nuclear Information System (INIS)

Jeon, Young Jin; Kang, Hyun Wook; Ko, Seung Hwan; Sung, Hyung Jin

2013-01-01

An image processing method for evaluating the quality of nanowire alignment in a microchannel is described. A solution containing nanowires flowing into a microchannel will tend to deposit the nanowires on the bottom surface of the channel via near-wall shear flows. The deposited nanowires generally form complex directional structures along the direction of flow, and the physical properties of these structures depend on the structural morphology, including the alignment quality. A quantitative analysis approach to characterizing the nanowire alignment is needed to estimate the useful features of the nanowire structures. This analysis consists of several image processing methods, including ridge detection, texton analysis and autocorrelation function (ACF) calculation. The ridge detection method improved the ACF by extracting nanowire frames 1–2 pixels in width. Dilation filters were introduced to permit a comparison of the ACF results calculated from different images, regardless of the nanowire orientation. An ACF based on the FFT was then calculated over a square interrogation window. The alignment angle probability distribution was obtained using texton analysis. Monte Carlo simulations of artificially generated images were carried out, and the new algorithm was applied to images collected using two types of microscopy. (paper)

Design and synthesis of diverse functional kinked nanowire structures for nanoelectronic bioprobes.

Science.gov (United States)

Xu, Lin; Jiang, Zhe; Qing, Quan; Mai, Liqiang; Zhang, Qingjie; Lieber, Charles M

2013-02-13

Functional kinked nanowires (KNWs) represent a new class of nanowire building blocks, in which functional devices, for example, nanoscale field-effect transistors (nanoFETs), are encoded in geometrically controlled nanowire superstructures during synthesis. The bottom-up control of both structure and function of KNWs enables construction of spatially isolated point-like nanoelectronic probes that are especially useful for monitoring biological systems where finely tuned feature size and structure are highly desired. Here we present three new types of functional KNWs including (1) the zero-degree KNW structures with two parallel heavily doped arms of U-shaped structures with a nanoFET at the tip of the "U", (2) series multiplexed functional KNW integrating multi-nanoFETs along the arm and at the tips of V-shaped structures, and (3) parallel multiplexed KNWs integrating nanoFETs at the two tips of W-shaped structures. First, U-shaped KNWs were synthesized with separations as small as 650 nm between the parallel arms and used to fabricate three-dimensional nanoFET probes at least 3 times smaller than previous V-shaped designs. In addition, multiple nanoFETs were encoded during synthesis in one of the arms/tip of V-shaped and distinct arms/tips of W-shaped KNWs. These new multiplexed KNW structures were structurally verified by optical and electron microscopy of dopant-selective etched samples and electrically characterized using scanning gate microscopy and transport measurements. The facile design and bottom-up synthesis of these diverse functional KNWs provides a growing toolbox of building blocks for fabricating highly compact and multiplexed three-dimensional nanoprobes for applications in life sciences, including intracellular and deep tissue/cell recordings.

Structural and electronic properties of AlX (X = P, As, Sb) nanowires: Ab initio study

International Nuclear Information System (INIS)

Srivastava, Anurag; Tyagi, Neha

2012-01-01

Present paper discusses the structural stability and electronic properties of AlX (X = P, As and Sb) nanowires in its linear, zigzag, ladder, square and hexagonal type atomic configurations. The structural optimization has been performed in self consistence manner by using generalized gradient approximation with revised Perdew, Burke and Ernzerhof type parameterization. The study observes that in all the three nanowires, the square shaped atomic configuration is the most stable one. The calculated electronic band structures and density of states profile confirms the semiconducting behaviour of linear and zigzag shaped nanowires of AlP, whereas for AlAs and AlSb nanowires are metallic. The ground state properties have also been analysed in terms of bond length, bulk modulus and pressure derivative for all the nanowires along with their bulk counterpart. The lower bulk modulus of all the linear shaped geometries of AlX nanowires in comparison to its bulk counterpart indicates softening of the material at reduced dimension. -- Graphical abstract: Figure-Electronic band structure of zigzag shaped AlP nanowire. The present electronic band structures of zigzag and linear shaped AlP nanowires are showing a clear band gap at Γ point, however others (AlAs and AlSb) in zigzag as well as in linear shape show metallic behaviour. Highlights: ► Stability analysis of five geometries of AlX (X = P, As and Sb) nanowires studied. ► Square shaped geometry of AlX nanowires is most stable. ► Linear and zigzag shaped AlP nanowires are semiconducting. ► Bulk moduli of all the linear nanowires are lower than their bulk counterpart. ► Lower bulk moduli defends the softening of material.

Atomic structure of self-organizing iridium induced nanowires on Ge(001)

Energy Technology Data Exchange (ETDEWEB)

Kabanov, N.S., E-mail: n.kabanov@utwente.nl [Faculty of Physics, Moscow State University, 119991 (Russian Federation); Physics of Interfaces and Nanomaterials, MESA+ Institute for Nanotechnology, University of Twente, P. O. Box 217, Enschede 7500 AE (Netherlands); Heimbuch, R.; Zandvliet, H.J.W. [Physics of Interfaces and Nanomaterials, MESA+ Institute for Nanotechnology, University of Twente, P. O. Box 217, Enschede 7500 AE (Netherlands); Saletsky, A.M.; Klavsyuk, A.L. [Faculty of Physics, Moscow State University, 119991 (Russian Federation)

2017-05-15

Highlights: • Ir/Ge(001) structure has been studied with DFT calculations and scanning tunneling microscopy. • Ir/Ge(001) nanowires are composed of Ge atoms and Ir atoms are located in subsurface positions. • The regions in the vicinity of the nanowires are very dynamic, even at temperatures as low as 77 K. - Abstract: The atomic structure of self-organizing iridium (Ir) induced nanowires on Ge(001) is studied by density functional theory (DFT) calculations and variable-temperature scanning tunneling microscopy. The Ir induced nanowires are aligned in a direction perpendicular to the Ge(001) substrate dimer rows, have a width of two atoms and are completely kink-less. Density functional theory calculations show that the Ir atoms prefer to dive into the Ge(001) substrate and push up the neighboring Ge substrate atoms. The nanowires are composed of Ge atoms and not Ir atoms as previously assumed. The regions in the vicinity of the nanowires are very dynamic, even at temperatures as low as 77 K. Time-resolved scanning tunneling microscopy measurements reveal that this dynamics is caused by buckled Ge substrate dimers that flip back and forth between their two buckled configurations.

LDA+U and tight-binding electronic structure of InN nanowires

Science.gov (United States)

Molina-Sánchez, A.; García-Cristóbal, A.; Cantarero, A.; Terentjevs, A.; Cicero, G.

2010-10-01

In this paper we employ a combined ab initio and tight-binding approach to obtain the electronic and optical properties of hydrogenated Indium nitride (InN) nanowires. We first discuss InN band structure for the wurtzite structure calculated at the LDA+U level and use this information to extract the parameters needed for an empirical tight-binging implementation. These parameters are then employed to calculate the electronic and optical properties of InN nanowires in a diameter range that would not be affordable by ab initio techniques. The reliability of the large nanowires results is assessed by explicitly comparing the electronic structure of a small diameter wire studied both at LDA+U and tight-binding level.

Substrate-Dependent Differences in the Crystal Structures and Optical Properties of ZnSe Nanowires

Directory of Open Access Journals (Sweden)

Keumyoung Seo

2015-01-01

Full Text Available The optical and structural properties of ZnSe nanowires directly grown on three different substrates, SiO2, ITO, and graphene, were investigated. ZnSe nanowires grown on graphene and SiO2 were found to have cubic structures, while ZnSe nanowires grown on ITO had a mixed cubic and hexagonal structure. The main peaks in the photoluminescence spectra of ZnSe nanowires grown on SiO2, ITO, and graphene were located at 459, 627, and 627/460 nm, respectively. In addition, a field-emission light-emitting device was fabricated using ZnSe nanowires as a phosphor and graphene as an electrode. The device showed a red emission peak with Commission Internationale de L’Eclairage coordinates of (0.621, 0.315.

Growth, structure and phase transitions of epitaxial nanowires of III-V semiconductors

International Nuclear Information System (INIS)

Glas, F; Patriarche, G; Harmand, J C

2010-01-01

We review and illustrate the impact of TEM on the study of nanowires of non-nitride III-V semiconductors, with particular emphasis on the understanding of the thermodynamics and kinetics of their formation assisted by nano-sized catalyst particles. Besides providing basic information about the morphology of the nanowires and their growth rate as a function of diameter, TEM offers insights into the peculiar crystalline structure that they adopt. We discuss the formation of the unusual wurtzite hexagonal crystalline phase and that of planar stacking defects in these nanowires and show that they are kinetically controlled. We also demonstrate the transformation of wurtzite into cubic sphalerite upon epitaxial burying of the nanowires. Nanowires are particularly interesting in that they allow the fabrication of precisely positioned quantum dots with well-defined geometries. In this respect, we discuss the formation of strained quantum-size inclusions in nanowires, their critical dimensions and the kinetic and thermodynamic factors governing the changes of the crystalline structure that sometimes occur around a hetero-interface.

Structural and electrochemical study of the reaction of lithium with silicon nanowires

KAUST Repository

Chan, Candace K.; Ruffo, Riccardo; Hong, Seung Sae; Huggins, Robert A.; Cui, Yi

2009-01-01

The structural transformations of silicon nanowires when cycled against lithium were evaluated using electrochemical potential spectroscopy and galvanostatic cycling. During the charge, the nanowires alloy with lithium to form an amorphous Lix

Structural investigation of GaInP nanowires using X-ray diffraction

DEFF Research Database (Denmark)

Kriegner, D.; Persson, Johan Mikael; Etzelstorfer, T.

2013-01-01

In this work the structure of ternary GaxIn1−xP nanowires is investigated with respect to the chemical composition and homogeneity. The nanowires were grown by metal–organic vapor-phase epitaxy. For the investigation of ensemble fluctuations on several lateral length scales, X-ray diffraction...... gradients along the sample by recording diffraction patterns at different positions. In addition, compositional variations were found also within single nanowires in X-ray energy dispersive spectroscopy measurements....

Nanowire Electrodes for Advanced Lithium Batteries

Directory of Open Access Journals (Sweden)

Lei eHuang

2014-10-01

Full Text Available Since the commercialization of lithium ion batteries (LIBs in the past two decades, rechargeable LIBs have become widespread power sources for portable devices used in daily life. However, current demands require higher energy density and power density of batteries. The electrochemical energy storage performance of LIBs could be improved by applying nanomaterial electrodes, but their fast capacity fading is still one of the key limitations and the mechanism needs to be clearly understood. Single nanowire electrode devices are considered as a versatile platform for in situ probing the direct relationship between electrical transport, structure change, and other properties of the single nanowire electrode along with the charge/discharge process. The results indicate the conductivity decrease of the nanowire electrode and the structural disorder/destruction during electrochemical reactions which limit the cycling performance of LIBs. Based on the in situ observations, some feasible structure architecture strategies, including prelithiation, coaxial structure, nanowire arrays and hierarchical structure architecture, are proposed and utilized to restrain the conductivity decrease and structural disorder/destruction. Further, the applications of nanowire electrodes in some beyond Li-ion batteries, such as Li-S and Li-air battery, are also described.

Atomistic simulations of the structures of Pd-Pt bimetallic nanoparticles and nanowires

OpenAIRE

Yun, Kayoung; Cha, Pil-Ryung; Lee, Jaegab; Kim, Jiyoung; Nam, Ho-Seok

2015-01-01

Bimetallic nanoalloys such as nanoparticles and nanowires are attracting significant attention due to their vast potential applications such as in catalysis and nanoelectronics. Notably, Pd-Pt nanoparticles/nanowires are being widely recognized as catalysts and hydrogen sensors. Compared to unary systems, alloys present more structural complexity with various compositional configurations. Therefore, it is important to understand energetically preferred atomic structures of bimetallic nanoallo...

Simple synthetic route to manganese-containing nanowires with the spinel crystal structure

Energy Technology Data Exchange (ETDEWEB)

Yu, Lei; Zhang, Yan; Hudak, Bethany M.; Wallace, Damon K.; Kim, Doo Young; Guiton, Beth S.

2016-08-15

This report describes a new route to synthesize single-crystalline manganese-containing spinel nanowires (NWs) by a two-step hydrothermal and solid-state synthesis. Interestingly, a nanowire or nanorod morphology is maintained during conversion from MnO{sub 2}/MnOOH to CuMn{sub 2}O{sub 4}/Mg{sub 2}MnO{sub 4}, despite the massive structural rearrangement this must involve. Linear sweep voltammetry (LSV) curves of the products give preliminary demonstration that CuMn{sub 2}O{sub 4} NWs are catalytically active towards the oxygen evolution reaction (OER) in alkaline solution, exhibiting five times the magnitude of current density found with pure carbon black. - Highlights: • Synthesis of single-crystalline manganese-containing spinel nanowires. • Binary oxide nanowire converted to ternary oxide wire through solid state reaction. • Approach to structure conversion with shape retention could be generally applicable. • Copper and Manganese display multiple oxidation states with potential for catalysis. • CuMn{sub 2}O{sub 4} nanowires show promise as catalysts for the oxygen evolution reaction.

Synthesis of silicon nanowires and novel nano-dendrite structures

International Nuclear Information System (INIS)

Sinha, Saion; Gao Bo; Zhou, Otto

2004-01-01

We report a study on the effects of various parameters on the synthesis of silicon nanowires (5--50 nm in diameter) by pulsed laser ablation. A novel silicon nanodendrite structure is observed by changing some of the growth parameters abruptly. This growth mechanism is explained by a qualitative model. These nanodendrites show a promise of being used as a template in fabricating nanocircuits. Thermal quantum confinement effects were also observed on the silicon nanowires and have been reported

Nanowire Electrodes for Advanced Lithium Batteries

Energy Technology Data Exchange (ETDEWEB)

Huang, Lei; Wei, Qiulong; Sun, Ruimin; Mai, Liqiang, E-mail: mlq518@whut.edu.cn [State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, WUT-Harvard Joint Nano Key Laboratory, Wuhan University of Technology, Wuhan (China)

2014-10-27

Since the commercialization of lithium ion batteries (LIBs) in the past two decades, rechargeable LIBs have become widespread power sources for portable devices used in daily life. However, current demands require higher energy density and power density of batteries. The electrochemical energy storage performance of LIBs could be improved by applying nanomaterial electrodes, but their fast capacity fading is still one of the key limitations and the mechanism need to be clearly understood. Single nanowire electrode devices are considered as a versatile platform for in situ probing the direct relationship between electrical transport, structure change, and other properties of the single nanowire electrode along with the charge/discharge process. The results indicate that the conductivity decrease of the nanowire electrode and the structural disorder/destruction during electrochemical reaction limit the cycling performance of LIBs. Based on the in situ observations, some feasible optimization strategies, including prelithiation, coaxial structure, nanowire arrays, and hierarchical structure architecture, are proposed and utilized to restrain the conductivity decrease and structural disorder/destruction. Further, the applications of nanowire electrodes in some “beyond Li-ion” batteries, such as Li-S and Li-air batteries are also described.

Nanowire Electrodes for Advanced Lithium Batteries

International Nuclear Information System (INIS)

Huang, Lei; Wei, Qiulong; Sun, Ruimin; Mai, Liqiang

2014-01-01

Since the commercialization of lithium ion batteries (LIBs) in the past two decades, rechargeable LIBs have become widespread power sources for portable devices used in daily life. However, current demands require higher energy density and power density of batteries. The electrochemical energy storage performance of LIBs could be improved by applying nanomaterial electrodes, but their fast capacity fading is still one of the key limitations and the mechanism need to be clearly understood. Single nanowire electrode devices are considered as a versatile platform for in situ probing the direct relationship between electrical transport, structure change, and other properties of the single nanowire electrode along with the charge/discharge process. The results indicate that the conductivity decrease of the nanowire electrode and the structural disorder/destruction during electrochemical reaction limit the cycling performance of LIBs. Based on the in situ observations, some feasible optimization strategies, including prelithiation, coaxial structure, nanowire arrays, and hierarchical structure architecture, are proposed and utilized to restrain the conductivity decrease and structural disorder/destruction. Further, the applications of nanowire electrodes in some “beyond Li-ion” batteries, such as Li-S and Li-air batteries are also described.

Metal-dielectric-CNT nanowires for surface-enhanced Raman spectroscopy

Science.gov (United States)

Bond, Tiziana C.; Altun, Ali; Park, Hyung Gyu

2017-10-03

A sensor with a substrate includes nanowires extending vertically from the substrate, a hafnia coating on the nanowires that provides hafnia coated nanowires, and a noble metal coating on the hafnia coated nanowires. The top of the hafnia and noble metal coated nanowires bent onto one another to create a canopy forest structure. There are numerous randomly arranged holes that let through scattered light. The many points of contact, hot spots, amplify signals. The methods include the steps of providing a Raman spectroscopy substrate, introducing nano crystals to the Raman spectroscopy substrate, growing a forest of nanowires from the nano crystals on the Raman spectroscopy substrate, coating the nanowires with hafnia providing hafnia coated nanowires, and coating the hafnia coated nanowires with a noble metal or other metal.

Structural study of disordered SiC nanowires by three-dimensional rotation electron diffraction

International Nuclear Information System (INIS)

Li, Duan; Guo, Peng; Wan, Wei; Zou, Ji; Shen, Zhijian; Guzi de Moraes, Elisângela; Colombo, Paolo

2014-01-01

The structure of disordered SiC nanowires was studied by using the three-dimensional rotation electron diffraction (RED) technique. The streaks shown in the RED images indicated the stacking faults of the nanowire. High-resolution transmission electron microscopy imaging was employed to support the results from the RED data. It suggested that a 2H polytype is most possible for the nanowires. (paper)

Effects of pH on the crystallographic structure and magnetic properties of electrodeposited cobalt nanowires

International Nuclear Information System (INIS)

Zafar, N.; Shamaila, S.; Sharif, R.; Wali, H.; Naseem, S.; Riaz, S.; Khaleeq-ur-Rahman, M.

2015-01-01

Anodic aluminum oxide templates with pore diameter of 40 nm and inter pore separation of 100 nm are prepared by two step anodization in 0.3 M oxalic acid solution. These templates are used to fabricate dc-deposited Co nanowires at different pH values of acidic bath. Continuous and densely packed nanowires having length ∼8 µm are observed. The hcp configuration appeared at moderate and high pH whereas both fcc and hcp phases are observed at low pH. However the crystallinity distorted at high pH due to formation of polycrystalline structure of cobalt nanowires. Alignment of easy-axis of nanowires can be tailored by varying pH of solution. - Highlights: • Variation in the structure of dc deposited cobalt nanowires can be obtained by varying pH of acidic bath. • The hcp structure is stable at room temperature with low voltage deposition for electrodeposited Co nanowires. Co with fcc structure, is stable at temperatures above 422 °C or at pH<3 with high potential. • The hcp (100) plane is obtained with pH∼3.5 and (101) is stable at pH∼5.5 due to variation in temperature inside the pores with respect to the pH. • Alignment of easy-axis of nanowires can be tailored by varying pH of solution

Coaxial-structured ZnO/silicon nanowires extended-gate field-effect transistor as pH sensor

International Nuclear Information System (INIS)

Li, Hung-Hsien; Yang, Chi-En; Kei, Chi-Chung; Su, Chung-Yi; Dai, Wei-Syuan; Tseng, Jung-Kuei; Yang, Po-Yu; Chou, Jung-Chuan; Cheng, Huang-Chung

2013-01-01

An extended-gate field-effect transistor (EGFET) of coaxial-structured ZnO/silicon nanowires as pH sensor was demonstrated in this paper. The oriented 1-μm-long silicon nanowires with the diameter of about 50 nm were vertically synthesized by the electroless metal deposition method at room temperature and were sequentially capped with the ZnO films using atomic layer deposition at 50 °C. The transfer characteristics (I DS –V REF ) of such ZnO/silicon nanowire EGFET sensor exhibited the sensitivity and linearity of 46.25 mV/pH and 0.9902, respectively for the different pH solutions (pH 1–pH 13). In contrast to the ZnO thin-film ones, the ZnO/silicon nanowire EGFET sensor achieved much better sensitivity and superior linearity. It was attributed to a high surface-to-volume ratio of the nanowire structures, reflecting a larger effective sensing area. The output voltage and time characteristics were also measured to indicate good reliability and durability for the ZnO/silicon nanowires sensor. Furthermore, the hysteresis was 9.74 mV after the solution was changed as pH 7 → pH 3 → pH 7 → pH 11 → pH 7. - Highlights: ► Coaxial-structured ZnO/silicon nanowire EGFET was demonstrated as pH sensor. ► EMD and ALD methods were proposed to fabricate ZnO/silicon nanowires. ► ZnO/silicon nanowire EGFET sensor achieved better sensitivity and linearity. ► ZnO/silicon nanowire EGFET sensor had good reliability and durability

Structural and electrochemical study of the reaction of lithium with silicon nanowires

KAUST Repository

Chan, Candace K.

2009-04-01

The structural transformations of silicon nanowires when cycled against lithium were evaluated using electrochemical potential spectroscopy and galvanostatic cycling. During the charge, the nanowires alloy with lithium to form an amorphous LixSi compound. At potentials <50 mV, a structural transformation occurs. In studies on micron-sized particles previously reported in the literature, this transformation is a crystallization to a metastable Li15Si4 phase. X-ray diffraction measurements on the Si nanowires, however, show that they are amorphous, suggesting that a different amorphous phase (LiySi) is formed. Lithium is removed from this phase in the discharge to form amorphous silicon. We have found that limiting the voltage in the charge to 70 mV results in improved efficiency and cyclability compared to charging to 10 mV. This improvement is due to the suppression of the transformation at low potentials, which alloys for reversible cycling of amorphous silicon nanowires. © 2008 Elsevier B.V. All rights reserved.

Structural characterization of Fe−Pd nanowires grown by electrodeposition using an acid electrolyte

Energy Technology Data Exchange (ETDEWEB)

Domenichini, P. [Instituto Balseiro, Universidad Nacional de Cuyo, Av. Bustillo 9500, 8400 San Carlos de Bariloche (Argentina); Condó, A.M. [Instituto Balseiro, Universidad Nacional de Cuyo, Av. Bustillo 9500, 8400 San Carlos de Bariloche (Argentina); Centro Atómico Bariloche, Comisión Nacional de Energía Atómica, Av. Bustillo 9500, 8400 San Carlos de Bariloche (Argentina); Haberkorn, N., E-mail: nhaberk@cab.cnea.gov.ar [Instituto Balseiro, Universidad Nacional de Cuyo, Av. Bustillo 9500, 8400 San Carlos de Bariloche (Argentina); Centro Atómico Bariloche, Comisión Nacional de Energía Atómica, Av. Bustillo 9500, 8400 San Carlos de Bariloche (Argentina)

2016-07-01

Fe{sub 70}Pd{sub 30} nanostructures have potential application in actuators due to their conventional and magnetic shape memory. Here, we report the microstructure of electrodeposition grown Fe−Pd nanowires in which the process was confined to polycarbonate membranes with a nominal pore diameter of 200 nm. We used an acid electrolyte (pH ≈ 5) in which the solution was stabilized with sulfosalicylic acid. The average chemical concentration of the nanowires can be systematically shifted from rich palladium to rich iron by changing the growth potential. The study of the microstructure by transmission electron microscopy indicates high chemical inhomogeneities due to phase coexistence between rich palladium regions (with FCC structure) and rich iron regions. The latter present a combination of BCC and amorphous phases. The average chemical composition of the nanowires can be better adjusted by using a low frequency square wave voltage excitation (alternating rich Pd and rich Fe regions). However, independently of the growth process, the nanowires morphology collapses after thermal annealing. This could be ascribed to fragile grain boundaries due to the presence of amorphous hydroxides and chemical impurities produced during the electrochemical process. - Highlights: • Synthesis of Fe−Pd nanowires by electrodeposition is reported. • Structural characterization of the nanowires by transmission electron microscopy. • The synthesis of nanowires with austenitic phase is limited by fragile grain boundaries.

High thermoelectric properties of (Sb, Bi)2Te3 nanowire arrays by tilt-structure engineering

Science.gov (United States)

Tan, Ming; Hao, Yanming; Deng, Yuan; Chen, Jingyi

2018-06-01

In this paper, we present an innovative tilt-structure design concept for (Sb, Bi)2Te3 nanowire array assembled by high-quality nanowires with well oriented growth, utilizing a simple vacuum thermal evaporation technique. The unusual tilt-structure (Sb, Bi)2Te3 nanowire array with a tilted angle of 45° exhibits a high thermoelectric dimensionless figure-of-merit ZT = 1.72 at room temperature. The relatively high ZT value in contrast to that of previously reported (Sb, Bi)2Te3 materials and the vertical (Sb, Bi)2Te3 nanowire arrays evidently reveals the crucial role of the unique tilt-structure in favorably influencing carrier and phonon transport properties, resulting in a significantly improved ZT value. The transport mechanism of such tilt-structure is proposed and investigated. This method opens a new approach to optimize nano-structure in thin films for next-generation thermoelectric materials and devices.

From nanodiamond to nanowires.

Energy Technology Data Exchange (ETDEWEB)

Barnard, A.; Materials Science Division

2005-01-01

Recent advances in the fabrication and characterization of semiconductor and metallic nanowires are proving very successful in meeting the high expectations of nanotechnologists. Although the nanoscience surrounding sp{sup 3} bonded carbon nanotubes has continued to flourish over recent years the successful synthesis of the sp{sup 3} analogue, diamond nanowires, has been limited. This prompts questions as to whether diamond nanowires are fundamentally unstable. By applying knowledge obtained from examining the structural transformations in nanodiamond, a framework for analyzing the structure and stability of diamond nanowires may be established. One possible framework will be discussed here, supported by results of ab initio density functional theory calculations used to study the structural relaxation of nanodiamond and diamond nanowires. The results show that the structural stability and electronic properties of diamond nanowires are dependent on the surface morphology, crystallographic direction of the principal axis, and the degree of surface hydrogenation.

TiO2 nanowire-templated hierarchical nanowire network as water-repelling coating

Science.gov (United States)

Hang, Tian; Chen, Hui-Jiuan; Xiao, Shuai; Yang, Chengduan; Chen, Meiwan; Tao, Jun; Shieh, Han-ping; Yang, Bo-ru; Liu, Chuan; Xie, Xi

2017-12-01

Extraordinary water-repelling properties of superhydrophobic surfaces make them novel candidates for a great variety of potential applications. A general approach to achieve superhydrophobicity requires low-energy coating on the surface and roughness on nano- and micrometre scale. However, typical construction of superhydrophobic surfaces with micro-nano structure through top-down fabrication is restricted by sophisticated fabrication techniques and limited choices of substrate materials. Micro-nanoscale topographies templated by conventional microparticles through surface coating may produce large variations in roughness and uncontrollable defects, resulting in poorly controlled surface morphology and wettability. In this work, micro-nanoscale hierarchical nanowire network was fabricated to construct self-cleaning coating using one-dimensional TiO2 nanowires as microscale templates. Hierarchical structure with homogeneous morphology was achieved by branching ZnO nanowires on the TiO2 nanowire backbones through hydrothermal reaction. The hierarchical nanowire network displayed homogeneous micro/nano-topography, in contrast to hierarchical structure templated by traditional microparticles. This hierarchical nanowire network film exhibited high repellency to both water and cell culture medium after functionalization with fluorinated organic molecules. The hierarchical structure templated by TiO2 nanowire coating significantly increased the surface superhydrophobicity compared to vertical ZnO nanowires with nanotopography alone. Our results demonstrated a promising strategy of using nanowires as microscale templates for the rational design of hierarchical coatings with desired superhydrophobicity that can also be applied to various substrate materials.

Potential of silicon nanowires structures as nanoscale piezoresistors in mechanical sensors

International Nuclear Information System (INIS)

Messina, M; Njuguna, J

2012-01-01

This paper presents the design of a single square millimeter 3-axial accelerometer for bio-mechanics measurements that exploit the potential of silicon nanowires structures as nanoscale piezoresistors. The main requirements of this application are miniaturization and high measurement accuracy. Nanowires as nanoscale piezoresistive devices have been chosen as sensing element, due to their high sensitivity and miniaturization achievable. By exploiting the electro-mechanical features of nanowires as nanoscale piezoresistors, the nominal sensor sensitivity is overall boosted by more than 30 times. This approach allows significant higher accuracy and resolution with smaller sensing element in comparison with conventional devices without the need of signal amplification.

Structural and electronic properties of Si1−xGex alloy nanowires

International Nuclear Information System (INIS)

Iori, Federico; Ossicini, Stefano; Rurali, Riccardo

2014-01-01

We present first-principles density-functional calculations of Si 1−x Ge x alloy nanowires. We show that given the composition of the alloy, the structural properties of the nanowires can be predicted with great accuracy by means of Vegard's law, linearly interpolating the values of a pure Si and a pure Ge nanowire of the same diameter. The same holds, to some extent, also for electronic properties such as the band-gap. We also assess to what extend the band-gap varies as a function of disorder, i.e., how it changes for different random realization of a given concentration. These results make possible to tailor the desired properties of SiGe alloy nanowires starting directly from the data relative to the pristine wires.

Structural and electronic properties of Pt induced nanowires on Ge(110)

Energy Technology Data Exchange (ETDEWEB)

Zhang, L.; Bampoulis, P.; Safaei, A.; Zandvliet, H.J.W.; Houselt, A. van, E-mail: A.vanHouselt@utwente.nl

2016-11-30

Highlights: • Deposition of Pt induces regularly spaced (1.13 nm, 1.97 nm and 3.38 nm) nanowires on Ge(110). • In the troughs between the wires spaced 6× the Ge lattice consant pentagons are observed. • Spatially resolved STS reveals a filled electronic state at −0.35 eV. • This state has its highest intensity above the pentagons. • For 2 ML Pt, nanowires coexist with PtGe clusters, which become liquid like above 1040 K. - Abstract: The structural and electronic properties of Pt induced nanowires on Ge(110) surfaces have been studied by scanning tunneling microscopy and low energy electron microscopy. The deposition of a sub-monolayer amount of Pt and subsequent annealing at 1100 (±30) K results into nanowires which are aligned along the densely packed [1–10] direction of the Ge(110) surface. With increasing Pt coverage the nanowires form densely packed arrays with separations of 1.1 ± 0.1 nm, 2.0 ± 0.1 nm and 3.4 ± 0.1 nm. Ge pentagons reside in the troughs for nanowire separations of 3.4 nm, however for smaller nanowire separations no pentagons are found. Spatially resolved scanning tunneling spectroscopy measurements reveal a filled electronic state at −0.35 eV. This electronic state is present in the troughs as well as on the nanowires. The −0.35 eV state has the strongest intensity on the pentagons. For Pt depositions exceeding two monolayers, pentagon free nanowire patches are found, that coexist with Pt/Ge clusters. Upon annealing at 1040 K these Pt/Ge clusters become liquid-like, indicating that we are dealing with eutectic Pt{sub 0.22}Ge{sub 0.78} clusters. Low energy electron microscopy videos reveal the formation and spinodal decomposition of these eutectic Pt/Ge clusters.

Growth of InAs/InP core-shell nanowires with various pure crystal structures.

Science.gov (United States)

Gorji Ghalamestani, Sepideh; Heurlin, Magnus; Wernersson, Lars-Erik; Lehmann, Sebastian; Dick, Kimberly A

2012-07-20

We have studied the epitaxial growth of an InP shell on various pure InAs core nanowire crystal structures by metal-organic vapor phase epitaxy. The InP shell is grown on wurtzite (WZ), zinc-blende (ZB), and {111}- and {110}-type faceted ZB twin-plane superlattice (TSL) structures by tuning the InP shell growth parameters and controlling the shell thickness. The growth results, particularly on the WZ nanowires, show that homogeneous InP shell growth is promoted at relatively high temperatures (∼500 °C), but that the InAs nanowires decompose under the applied conditions. In order to protect the InAs core nanowires from decomposition, a short protective InP segment is first grown axially at lower temperatures (420-460 °C), before commencing the radial growth at a higher temperature. Further studies revealed that the InP radial growth rate is significantly higher on the ZB and TSL nanowires compared to WZ counterparts, and shows a strong anisotropy in polar directions. As a result, thin shells were obtained during low temperature InP growth on ZB structures, while a higher temperature was used to obtain uniform thick shells. In addition, a schematic growth model is suggested to explain the basic processes occurring during the shell growth on the TSL crystal structures.

Growth of InAs/InP core–shell nanowires with various pure crystal structures

International Nuclear Information System (INIS)

Gorji Ghalamestani, Sepideh; Heurlin, Magnus; Lehmann, Sebastian; Dick, Kimberly A; Wernersson, Lars-Erik

2012-01-01

We have studied the epitaxial growth of an InP shell on various pure InAs core nanowire crystal structures by metal–organic vapor phase epitaxy. The InP shell is grown on wurtzite (WZ), zinc-blende (ZB), and {111}- and {110}-type faceted ZB twin-plane superlattice (TSL) structures by tuning the InP shell growth parameters and controlling the shell thickness. The growth results, particularly on the WZ nanowires, show that homogeneous InP shell growth is promoted at relatively high temperatures (∼500 °C), but that the InAs nanowires decompose under the applied conditions. In order to protect the InAs core nanowires from decomposition, a short protective InP segment is first grown axially at lower temperatures (420–460 °C), before commencing the radial growth at a higher temperature. Further studies revealed that the InP radial growth rate is significantly higher on the ZB and TSL nanowires compared to WZ counterparts, and shows a strong anisotropy in polar directions. As a result, thin shells were obtained during low temperature InP growth on ZB structures, while a higher temperature was used to obtain uniform thick shells. In addition, a schematic growth model is suggested to explain the basic processes occurring during the shell growth on the TSL crystal structures. (paper)

Atomistic theory of excitonic fine structure in InAs/InP nanowire quantum dot molecules

Science.gov (United States)

Świderski, M.; Zieliński, M.

2017-03-01

Nanowire quantum dots have peculiar electronic and optical properties. In this work we use atomistic tight binding to study excitonic spectra of artificial molecules formed by a double nanowire quantum dot. We demonstrate a key role of atomistic symmetry and nanowire substrate orientation rather than cylindrical shape symmetry of a nanowire and a molecule. In particular for [001 ] nanowire orientation we observe a nonvanishing bright exciton splitting for a quasimolecule formed by two cylindrical quantum dots of different heights. This effect is due to interdot coupling that effectively reduces the overall symmetry, whereas single uncoupled [001 ] quantum dots have zero fine structure splitting. We found that the same double quantum dot system grown on [111 ] nanowire reveals no excitonic fine structure for all considered quantum dot distances and individual quantum dot heights. Further we demonstrate a pronounced, by several orders of magnitude, increase of the dark exciton optical activity in a quantum dot molecule as compared to a single quantum dot. For [111 ] systems we also show spontaneous localization of single particle states in one of nominally identical quantum dots forming a molecule, which is mediated by strain and origins from the lack of the vertical inversion symmetry in [111 ] nanostructures of overall C3 v symmetry. Finally, we study lowering of symmetry due to alloy randomness that triggers nonzero excitonic fine structure and the dark exciton optical activity in realistic nanowire quantum dot molecules of intermixed composition.

Plasmonic engineering of metal-oxide nanowire heterojunctions in integrated nanowire rectification units

Energy Technology Data Exchange (ETDEWEB)

Lin, Luchan; Zhou, Y. Norman, E-mail: liulei@tsinghua.edu.cn, E-mail: nzhou@uwaterloo.ca [Department of Mechanical Engineering, State Key Laboratory of Tribology, Tsinghua University, Beijing 100084 (China); Centre for Advanced Materials Joining, University of Waterloo, Waterloo, Ontario N2L 3G1 (Canada); Zou, Guisheng; Liu, Lei, E-mail: liulei@tsinghua.edu.cn, E-mail: nzhou@uwaterloo.ca [Department of Mechanical Engineering, State Key Laboratory of Tribology, Tsinghua University, Beijing 100084 (China); Duley, Walt W. [Centre for Advanced Materials Joining, University of Waterloo, Waterloo, Ontario N2L 3G1 (Canada); Department of Physics and Astronomy, University of Waterloo, Waterloo, Ontario N2L 3G1 (Canada)

2016-05-16

We show that irradiation with femtosecond laser pulses can produce robust nanowire heterojunctions in coupled non-wetting metal-oxide Ag-TiO{sub 2} structures. Simulations indicate that joining arises from the effect of strong plasmonic localization in the region of the junction. Strong electric field effects occur in both Ag and TiO{sub 2} resulting in the modification of both surfaces and an increase in wettability of TiO{sub 2}, facilitating the interconnection of Ag and TiO{sub 2} nanowires. Irradiation leads to the creation of a thin layer of highly defected TiO{sub 2} in the contact region between the Ag and TiO{sub 2} nanowires. The presence of this layer allows the formation of a heterojunction and offers the possibility of engineering the electronic characteristics of interfacial structures. Rectifying junctions with single and bipolar properties have been generated in Ag-TiO{sub 2} nanowire circuits incorporating asymmetrical and symmetrical interfacial structures, respectively. This fabrication technique should be applicable for the interconnection of other heterogeneous metal-oxide nanowire components and demonstrates that femtosecond laser irradiation enables interfacial engineering for electronic applications of integrated nanowire structures.

Plasmonic engineering of metal-oxide nanowire heterojunctions in integrated nanowire rectification units

Science.gov (United States)

Lin, Luchan; Zou, Guisheng; Liu, Lei; Duley, Walt W.; Zhou, Y. Norman

2016-05-01

We show that irradiation with femtosecond laser pulses can produce robust nanowire heterojunctions in coupled non-wetting metal-oxide Ag-TiO2 structures. Simulations indicate that joining arises from the effect of strong plasmonic localization in the region of the junction. Strong electric field effects occur in both Ag and TiO2 resulting in the modification of both surfaces and an increase in wettability of TiO2, facilitating the interconnection of Ag and TiO2 nanowires. Irradiation leads to the creation of a thin layer of highly defected TiO2 in the contact region between the Ag and TiO2 nanowires. The presence of this layer allows the formation of a heterojunction and offers the possibility of engineering the electronic characteristics of interfacial structures. Rectifying junctions with single and bipolar properties have been generated in Ag-TiO2 nanowire circuits incorporating asymmetrical and symmetrical interfacial structures, respectively. This fabrication technique should be applicable for the interconnection of other heterogeneous metal-oxide nanowire components and demonstrates that femtosecond laser irradiation enables interfacial engineering for electronic applications of integrated nanowire structures.

Silicon nanowire structures as high-sensitive pH-sensors

International Nuclear Information System (INIS)

Belostotskaya, S O; Chuyko, O V; Kuznetsov, A E; Kuznetsov, E V; Rybachek, E N

2012-01-01

Sensitive elements for pH-sensors created on silicon nanostructures were researched. Silicon nanostructures have been used as ion-sensitive field effect transistor (ISFET) for the measurement of solution pH. Silicon nanostructures have been fabricated by 'top-down' approach and have been studied as pH sensitive elements. Nanowires have the higher sensitivity. It was shown, that sensitive element, which is made of 'one-dimensional' silicon nanostructure have bigger pH-sensitivity as compared with 'two-dimensional' structure. Integrated element formed from two p- and n-type nanowire ISFET ('inverter') can be used as high sensitivity sensor for local relative change [H+] concentration in very small volume.

Structural characterization of selective area growth GaN nanowires by non-destructive optical and electrical techniques

International Nuclear Information System (INIS)

Secco, Eleonora; Minj, Albert; Garro, Núria; Cantarero, Andrés; Colchero, Jaime; Urban, Arne; Oppo, Carla Ivana; Malindretos, Joerg; Rizzi, Angela

2015-01-01

The growth selectivity and structural quality of GaN nanowires obtained by plasma-assisted molecular beam epitaxy on pre-patterned GaN(0001) templates are investigated by means of non-destructive techniques. Optimum control over the nanowire arrangement and size requires a pitch between the mask apertures below twice the diffusion length of Ga atoms. Lower pitches, however, seem to slightly diminish the structural quality of the material, as revealed by the increase of the Raman peak linewidths. The photoluminescence spectra of the nanowires show a considerable presence of basal plane stacking faults, whose density increases for decreasing nanowire diameter. The capabilities of Kelvin probe force microscopy for imaging these kind of defects are also demonstrated. (paper)

Structural characterization of selective area growth GaN nanowires by non-destructive optical and electrical techniques

Science.gov (United States)

Secco, Eleonora; Minj, Albert; Garro, Núria; Cantarero, Andrés; Colchero, Jaime; Urban, Arne; Ivana Oppo, Carla; Malindretos, Joerg; Rizzi, Angela

2015-08-01

The growth selectivity and structural quality of GaN nanowires obtained by plasma-assisted molecular beam epitaxy on pre-patterned GaN(0001) templates are investigated by means of non-destructive techniques. Optimum control over the nanowire arrangement and size requires a pitch between the mask apertures below twice the diffusion length of Ga atoms. Lower pitches, however, seem to slightly diminish the structural quality of the material, as revealed by the increase of the Raman peak linewidths. The photoluminescence spectra of the nanowires show a considerable presence of basal plane stacking faults, whose density increases for decreasing nanowire diameter. The capabilities of Kelvin probe force microscopy for imaging these kind of defects are also demonstrated.

Vertical group III-V nanowires on si, heterostructures, flexible arrays and fabrication

Science.gov (United States)

Wang, Deli; Soci, Cesare; Bao, Xinyu; Wei, Wei; Jing, Yi; Sun, Ke

2015-01-13

Embodiments of the invention provide a method for direct heteroepitaxial growth of vertical III-V semiconductor nanowires on a silicon substrate. The silicon substrate is etched to substantially completely remove native oxide. It is promptly placed in a reaction chamber. The substrate is heated and maintained at a growth temperature. Group III-V precursors are flowed for a growth time. Preferred embodiment vertical Group III-V nanowires on silicon have a core-shell structure, which provides a radial homojunction or heterojunction. A doped nanowire core is surrounded by a shell with complementary doping. Such can provide high optical absorption due to the long optical path in the axial direction of the vertical nanowires, while reducing considerably the distance over which carriers must diffuse before being collected in the radial direction. Alloy composition can also be varied. Radial and axial homojunctions and heterojunctions can be realized. Embodiments provide for flexible Group III-V nanowire structures. An array of Group III-V nanowire structures is embedded in polymer. A fabrication method forms the vertical nanowires on a substrate, e.g., a silicon substrate. Preferably, the nanowires are formed by the preferred methods for fabrication of Group III-V nanowires on silicon. Devices can be formed with core/shell and core/multi-shell nanowires and the devices are released from the substrate upon which the nanowires were formed to create a flexible structure that includes an array of vertical nanowires embedded in polymer.

Layered structure in core–shell silicon nanowires

Energy Technology Data Exchange (ETDEWEB)

Van Tuan, Pham [Advanced Institute for Science and Technology (AIST) and International Training Institute for Materials Science Hanoi University of Science and Technology, 01 Dai Co Viet Street,Hanoi 10000,Vietnam (Viet Nam); Anh Tuan, Chu; Thanh Thuy, Tran; Binh Nam, Vu [Institute of Materials Science (IMS), Vietnamese Academy of Science and Technology (VAST), 18 Hoang Quoc Viet Street, Hanoi 10000 (Viet Nam); Toan Thang, Pham [Advanced Institute for Science and Technology (AIST) and International Training Institute for Materials Science Hanoi University of Science and Technology, 01 Dai Co Viet Street,Hanoi 10000,Vietnam (Viet Nam); Hong Duong, Pham, E-mail: duongphamhong@yahoo.com [Institute of Materials Science (IMS), Vietnamese Academy of Science and Technology (VAST), 18 Hoang Quoc Viet Street, Hanoi 10000 (Viet Nam); Thanh Huy, Pham, E-mail: huy.phamthanh@hust.edu.vn [Advanced Institute for Science and Technology (AIST) and International Training Institute for Materials Science Hanoi University of Science and Technology, 01 Dai Co Viet Street,Hanoi 10000,Vietnam (Viet Nam)

2014-10-15

Silicon nanowires (NWs) with core–shell structures were prepared using the Vapor–Liquid–Solid (VLS) method. The wires have lengths of several hundreds of nanometers and diameters in the range of 30–50 nm. Generally, these wires are too large to exhibit the quantum confinement effect of excitons in Si nanocrystals. However, the photoluminescence (PL) and Raman spectra are similar to those of nanocrystalline silicon embedded in a SiO{sub 2} matrix, in which the recombination of quantum-confined excitons plays an important role. This effect occurs only when the average size of the silicon nanocrystals is smaller than 5 nm. To understand this discrepancy, TEM images of nanowires were obtained and analyzed. The results revealed that the cores of wires have a layered Si/SiO{sub 2} structure, in which the thickness of each layer is much smaller than its diameter. The temperature dependence of the PL intensity was recorded from 11 to 300 K; the result is in good agreement with a model that takes into account the energy splitting between the excitonic singlet and triplet levels. - Highlights: • The cores of the Si NWs have a layered Si/SiO{sub 2} structure. • The Si NWs were formed due to the phase separation of Si and SiO{sub 2} and the partial oxidization by residual oxygen. • Two processes, the reaction of Si and oxygen atoms and the combination between Si atoms, occur simultaneously. • The formation of the layered structures is associated with the self-limiting oxidation phenomenon in Si nanostructures.

Structural and optical properties of silicon-carbide nanowires produced by the high-temperature carbonization of silicon nanostructures

Energy Technology Data Exchange (ETDEWEB)

Pavlikov, A. V., E-mail: pavlikov@physics.msu.ru [Moscow State University, Faculty of Physics (Russian Federation); Latukhina, N. V.; Chepurnov, V. I. [Samara National Researh University (Russian Federation); Timoshenko, V. Yu. [Moscow State University, Faculty of Physics (Russian Federation)

2017-03-15

Silicon-carbide (SiC) nanowire structures 40–50 nm in diameter are produced by the high-temperature carbonization of porous silicon and silicon nanowires. The SiC nanowires are studied by scanning electron microscopy, X-ray diffraction analysis, Raman spectroscopy, and infrared reflectance spectroscopy. The X-ray structural and Raman data suggest that the cubic 3C-SiC polytype is dominant in the samples under study. The shape of the infrared reflectance spectrum in the region of the reststrahlen band 800–900 cm{sup –1} is indicative of the presence of free charge carriers. The possibility of using SiC nanowires in microelectronic, photonic, and gas-sensing devices is discussed.

Organic Nanowires

DEFF Research Database (Denmark)

Balzer, Frank; Schiek, Manuela; Al-Shamery, Katharina

Single crystalline nanowires from fluorescing organic molecules like para-phenylenes or thiophenes are supposed to become key elements in future integrated optoelectronic devices [1]. For a sophisticated design of devices based on nanowires the basic principles of the nanowire formation have...... atomic force microscopy and from polarized far-field optical microscopy for various prototypical molecules are reproduced by electrostatic and Monte Carlo calculations. Based on the crystal structure, predictions on the growth habit from other conjugated molecules become in reach....

Electric Conductivity of Phosphorus Nanowires

International Nuclear Information System (INIS)

Jing-Xiang, Zhang; Hui, Li; Xue-Qing, Zhang; Kim-Meow, Liew

2009-01-01

We present the structures and electrical transport properties of nanowires made from different strands of phosphorus chains encapsulated in carbon nanotubes. Optimized by density function theory, our results indicate that the conductance spectra reveal an oscillation dependence on the size of wires. It can be seen from the density of states and current-voltage curves that the structure of nanowires affects their properties greatly. Among them, the DNA-like double-helical phosphorus nanowire exhibits the distinct characteristic of an approximately linear I – V relationship and has a higher conductance than others. The transport properties of phosphorus nanowires are highly correlated with their microstructures. (condensed matter: structure, mechanical and thermal properties)

Growth control, structure, chemical state, and photoresponse of CuO-CdS core-shell heterostructure nanowires.

Science.gov (United States)

El Mel, A A; Buffière, M; Bouts, N; Gautron, E; Tessier, P Y; Henzler, K; Guttmann, P; Konstantinidis, S; Bittencourt, C; Snyders, R

2013-07-05

The growth of single-crystal CuO nanowires by thermal annealing of copper thin films in air is studied. We show that the density, length, and diameter of the nanowires can be controlled by tuning the morphology and structure of the copper thin films deposited by DC magnetron sputtering. After identifying the optimal conditions for the growth of CuO nanowires, chemical bath deposition is employed to coat the CuO nanowires with CdS in order to form p-n nanojunction arrays. As revealed by high-resolution TEM analysis, the thickness of the polycrystalline CdS shell increases when decreasing the diameter of the CuO core for a given time of CdS deposition. Near-edge x-ray absorption fine-structure spectroscopy combined with transmission x-ray microscopy allows the chemical analysis of isolated nanowires. The absence of modification in the spectra at the Cu L and O K edges after the deposition of CdS on the CuO nanowires indicates that neither Cd nor S diffuse into the CuO phase. We further demonstrate that the core-shell nanowires exhibit the I-V characteristic of a resistor instead of a diode. The electrical behavior of the device was found to be photosensitive, since increasing the incident light intensity induces an increase in the collected electrical current.

Effect of the template-assisted electrodeposition parameters on the structure and magnetic properties of Co nanowire arrays

Energy Technology Data Exchange (ETDEWEB)

Kac, Malgorzata, E-mail: malgorzata.kac@ifj.edu.pl [Institute of Nuclear Physics Polish Academy of Sciences, ul. Radzikowskiego 152, 31-342 Krakow (Poland); Zarzycki, Arkadiusz [Institute of Nuclear Physics Polish Academy of Sciences, ul. Radzikowskiego 152, 31-342 Krakow (Poland); Kac, Slawomir [AGH University of Science and Technology, al. A. Mickiewicza 30, 30-059 Krakow (Poland); Kopec, Marek; Perzanowski, Marcin; Dutkiewicz, Erazm M.; Suchanek, Katarzyna; Maximenko, Alexey; Marszalek, Marta [Institute of Nuclear Physics Polish Academy of Sciences, ul. Radzikowskiego 152, 31-342 Krakow (Poland)

2016-09-15

Highlights: • Magnetic properties of Co nanowires in polycarbonate membranes were studied. • Electrodeposition stages were illustrated by SEM images. • Electrolyte and membrane parameters were optimized for Co nanowire fabrication. • Low temperature and potential favored nanowires with high coercivity and squareness. - Abstract: We studied the magnetic properties of Co nanowires electrodeposited in polycarbonate membranes as a function of the electrodeposition and template parameters. We showed the response of the current as a function of time, for nanowires prepared in various conditions. X-ray diffraction measurements indicate that nanowires have polycrystalline hcp structure with small addition of fcc phase. Magnetic properties analyzed by SQUID measurements suggest that easy axis of magnetization follows the nanowire axis with coercivity increasing with a decrease of nanowire diameter and length. The largest coercivity, equal to 850 Oe, was obtained for nanowires with the diameter of 30 nm and the length of 1.5 μm. We find the coercivity to be insensitive to pH value. Low electrodeposition temperature, low cathodic potential, and medium pH are the synthesis parameters most beneficial for large coercivity and/or magnetic anisotropy with easy axis along nanowires.

Enhancement of Light Absorption in Silicon Nanowire Photovoltaic Devices with Dielectric and Metallic Grating Structures.

Science.gov (United States)

Park, Jin-Sung; Kim, Kyoung-Ho; Hwang, Min-Soo; Zhang, Xing; Lee, Jung Min; Kim, Jungkil; Song, Kyung-Deok; No, You-Shin; Jeong, Kwang-Yong; Cahoon, James F; Kim, Sun-Kyung; Park, Hong-Gyu

2017-12-13

We report the enhancement of light absorption in Si nanowire photovoltaic devices with one-dimensional dielectric or metallic gratings that are fabricated by a damage-free, precisely aligning, polymer-assisted transfer method. Incorporation of a Si 3 N 4 grating with a Si nanowire effectively enhances the photocurrents for transverse-electric polarized light. The wavelength at which a maximum photocurrent is generated is readily tuned by adjusting the grating pitch. Moreover, the electrical properties of the nanowire devices are preserved before and after transferring the Si 3 N 4 gratings onto Si nanowires, ensuring that the quality of pristine nanowires is not degraded during the transfer. Furthermore, we demonstrate Si nanowire photovoltaic devices with Ag gratings using the same transfer method. Measurements on the fabricated devices reveal approximately 27.1% enhancement in light absorption compared to that of the same devices without the Ag gratings without any degradation of electrical properties. We believe that our polymer-assisted transfer method is not limited to the fabrication of grating-incorporated nanowire photovoltaic devices but can also be generically applied for the implementation of complex nanoscale structures toward the development of multifunctional optoelectronic devices.

Dramatically enhanced ultraviolet photosensing mechanism in a n-ZnO nanowires/i-MgO/n-Si structure with highly dense nanowires and ultrathin MgO layers

International Nuclear Information System (INIS)

Kim, Dong Chan; Jung, Byung Oh; Cho, Hyung Koun; Lee, Ju Ho; Lee, Jeong Yong; Lee, Jun Hee

2011-01-01

This study reports that the visible-blind ultraviolet (UV) photodetecting properties of ZnO nanowire based photodetectors were remarkably improved by introducing ultrathin insulating MgO layers between the ZnO nanowires and Si substrates. All layers were grown without pause by metal organic chemical vapor deposition and the density and vertical arrangement of the ZnO nanowires were strongly dependent on the thickness of the MgO layers. The sample in which an MgO layer with a thickness of 8 nm was inserted had high density nanowires with a vertical alignment and showed dramatically improved UV photosensing performance (photo-to-dark current ratio = 1344.5 and recovery time = 350 ms). The photoresponse spectrum revealed good visible-blind UV detectivity with a sharp cut off at 378 nm and a high UV/visible rejection ratio. A detailed discussion regarding the developed UV photosensing mechanism from the introduction of the i-MgO layers and highly dense nanowires in the n-ZnO nanowires/i-MgO/n-Si substrates structure is presented in this work.

Chiral gold nanowires with boerdijk-coxeter-bernal structure

KAUST Repository

Zhu, Yihan

2014-09-10

A Boerdijk-Coxeter-Bernal (BCB) helix is made of linearly stacked regular tetrahedra (tetrahelix). As such, it is chiral without nontrivial translational or rotational symmetries. We demonstrate here an example of the chiral BCB structure made of totally symmetrical gold atoms, created in nanowires by direct chemical synthesis. Detailed study by high-resolution electron microscopy illustrates their elegant chiral structure and the unique one-dimensional "pseudo-periodicity". The BCB-type atomic packing mode is proposed to be a result of the competition and compromise between the lattice and surface energy.

Synthesis, structure and optical properties of single-crystalline In{sub 2}O{sub 3} nanowires

Energy Technology Data Exchange (ETDEWEB)

Hadia, N.M.A., E-mail: nomery_abass@yahoo.com [Physics Department, Faculty of Science, Sohag University, 82524 Sohag (Egypt); Mohamed, H.A. [Physics Department, Faculty of Science, Sohag University, 82524 Sohag (Egypt); King Saud University, Teachers College, Science Department (Physics), 11148 Riyadh (Saudi Arabia)

2013-01-15

Highlights: Black-Right-Pointing-Pointer Metal and metal oxide one dimensional (1D) nanostructured materials are of crucial importance. Black-Right-Pointing-Pointer The paper deals with the synthesis of In{sub 2}O{sub 3} nanowires without the use of catalysts. Black-Right-Pointing-Pointer The optical constants and Photoluminescence (PL) of In{sub 2}O{sub 3} nanowires were evaluated. - Abstract: Indium oxide In{sub 2}O{sub 3} nanowires have been recently synthesized revealing interesting properties and used in various applications. In order to reduce as much as possible the influence of undesired dopants and/or impurities on the observed properties, In{sub 2}O{sub 3} nanowires have been grown without the use of catalysts, directly from metallic indium by a vapor transport technique and a controlled oxidation with oxygen-argon mixtures. Depending on the growth conditions (temperature, vapor pressure, oxygen concentration, etc.) different results have been achieved and it has been observed that a 'proper' In condensation on the substrates may enhance the nanowires growth. Detailed structural analysis showed that the In{sub 2}O{sub 3} nanostructures are single crystalline with a cubic crystal structure. The grown In{sub 2}O{sub 3} nanowires were optically characterized in order to evaluate the absorption coefficient, optical band gap, refractive index and extinction coefficient. Room temperature Photoluminescence (PL) spectrum showed broad and intense blue emission at 375 nm.

Zn-dopant dependent defect evolution in GaN nanowires

Science.gov (United States)

Yang, Bing; Liu, Baodan; Wang, Yujia; Zhuang, Hao; Liu, Qingyun; Yuan, Fang; Jiang, Xin

2015-10-01

Zn doped GaN nanowires with different doping levels (0, doping on the defect evolution, including stacking fault, dislocation, twin boundary and phase boundary, has been systematically investigated by transmission electron microscopy and first-principles calculations. Undoped GaN nanowires show a hexagonal wurtzite (WZ) structure with good crystallinity. Several kinds of twin boundaries, including (101&cmb.macr;3), (101&cmb.macr;1) and (202&cmb.macr;1), as well as Type I stacking faults (...ABABC&cmb.b.line;BCB...), are observed in the nanowires. The increasing Zn doping level (GaN nanowires. At high Zn doping level (3-5 at%), meta-stable cubic zinc blende (ZB) domains are generated in the WZ GaN nanowires. The WZ/ZB phase boundary (...ABABAC&cmb.b.line;BA...) can be identified as Type II stacking faults. The density of stacking faults (both Type I and Type II) increases with increasing the Zn doping levels, which in turn leads to a rough-surface morphology in the GaN nanowires. First-principles calculations reveal that Zn doping will reduce the formation energy of both Type I and Type II stacking faults, favoring their nucleation in GaN nanowires. An understanding of the effect of Zn doping on the defect evolution provides an important method to control the microstructure and the electrical properties of p-type GaN nanowires.Zn doped GaN nanowires with different doping levels (0, doping on the defect evolution, including stacking fault, dislocation, twin boundary and phase boundary, has been systematically investigated by transmission electron microscopy and first-principles calculations. Undoped GaN nanowires show a hexagonal wurtzite (WZ) structure with good crystallinity. Several kinds of twin boundaries, including (101&cmb.macr;3), (101&cmb.macr;1) and (202&cmb.macr;1), as well as Type I stacking faults (...ABABC&cmb.b.line;BCB...), are observed in the nanowires. The increasing Zn doping level (GaN nanowires. At high Zn doping level (3-5 at%), meta

Semiconductor nanowires and templates for electronic applications

Energy Technology Data Exchange (ETDEWEB)

Ying, Xiang

2009-07-15

This thesis starts by developing a platform for the organized growth of nanowires directly on a planar substrate. For this, a method to fabricate horizontal porous alumina membranes is studied. The second part of the thesis focuses on the study of nanowires. It starts by the understanding of the growth mechanisms of germanium nanowires and follows by the structural and electrical properties at the single nanowire level. Horizontally aligned porous anodic alumina (PAA) was used as a template for the nanowire synthesis. Three PAA arrangements were studied: - high density membranes - micron-sized fingers - multi-contacts Membranes formed by a high density of nanopores were obtained by anodizing aluminum thin films. Metallic and semiconducting nanowires were synthesized into the PAA structures via DC deposition, pulsed electro-depostion and CVD growth. The presence of gold, copper, indium, nickel, tellurium, and silicon nanowires inside PAA templates was verified by SEM and EDX analysis. Further, room-temperature transport measurements showed that the pores are completely filled till the bottom of the pores. In this dissertation, single crystalline and core-shell germanium nanowires are synthesized using indium and bismuth as catalyst in a chemical vapor deposition procedure with germane (GeH{sub 4}) as growth precursor. A systematic growth study has been performed to obtain high aspect-ratio germanium nanowires. The influence of the growth conditions on the final morphology and the crystalline structure has been determined via scanning electron microscopy (SEM) and high-resolution transmission electron microscopy (HRTEM). In the case of indium catalyzed germanium nanowires, two different structures were identified: single crystalline and crystalline core-amorphous shell. The preferential growth axis of both kinds of nanowires is along the [110] direction. The occurrence of the two morphologies was found to only depend on the nanowire dimension. In the case of bismuth

Electrodeposition of rhenium-tin nanowires

International Nuclear Information System (INIS)

Naor-Pomerantz, Adi; Eliaz, Noam; Gileadi, Eliezer

2011-01-01

Highlights: → Rhenium-tin nanowires were formed electrochemically, without using a template. → The nanowires consisted of a crystalline-Sn-core/amorphous-Re-shell structure. → The effects of bath composition and operating conditions were investigated. → A mechanism is suggested for the formation of the core/shell structure. → The nanowires may be attractive for a variety of applications. - Abstract: Rhenium (Re) is a refractory metal which exhibits an extraordinary combination of properties. Thus, nanowires and other nanostructures of Re-alloys may possess unique properties resulting from both Re chemistry and the nanometer scale, and become attractive for a variety of applications, such as in catalysis, photovoltaic cells, and microelectronics. Rhenium-tin coatings, consisting of nanowires with a core/shell structure, were electrodeposited on copper substrates under galvanostatic or potentiostatic conditions. The effects of bath composition and operating conditions were investigated, and the chemistry and structure of the coatings were studied by a variety of analytical tools. A Re-content as high as 77 at.% or a Faradaic efficiency as high as 46% were attained. Ranges of Sn-to-Re in the plating bath, applied current density and applied potential, within which the nanowires could be formed, were determined. A mechanism was suggested, according to which Sn nanowires were first grown on top of Sn micro-particles, and then the Sn nanowires reduced the perrhenate chemically, thus forming a core made of crystalline Sn-rich phase, and a shell made of amorphous Re-rich phase. The absence of mutual solubility of Re and Sn may be the driving force for this phase separation.

Designing and building nanowires: directed nanocrystal self-assembly into radically branched and zigzag PbS nanowires

International Nuclear Information System (INIS)

Xu Fan; Ma Xin; Gerlein, L Felipe; Cloutier, Sylvain G

2011-01-01

Lead sulfide nanowires with controllable optoelectronic properties would be promising building blocks for various applications. Here, we report the hot colloidal synthesis of radically branched and zigzag nanowires through self-attachment of star-shaped and octahedral nanocrystals in the presence of multiple surfactants. We obtained high-quality single-crystal nanowires with uniform diameter along the entire length, and the size of the nanowire can be tuned by tailoring the reaction parameters. This slow oriented attachment provides a better understanding of the intricacies of this complex nanocrystal assembly process. Meanwhile, these self-assembled nanowire structures have appealing lateral conformations with narrow side arms or highly faceted edges, where strong quantum confinement can occur. Consequently, the single-crystal nanowire structures exhibit strong photoluminescence in the near-infrared region with a large blue-shift compared to the bulk material.

Magnetostatic Interaction in Fe-Co Nanowires

Directory of Open Access Journals (Sweden)

Laura Elbaile

2012-01-01

Full Text Available Arrays of Fe-Co alloy nanowires with diameter around 35 nm and several micrometers in length have been synthesized by codepositing Fe and Co into porous anodic alumina. The morphology, structure, and magnetic properties of the nanowires (hysteresis loops and remanence curves were characterized by SEM, TEM, X-ray diffraction (XRD, and VSM, respectively. The XRD patterns indicate that the Fe-Co nanowires present a body-centered cubic (bcc structure and a preferred (110 orientation perpendicular to the template surface. From the hysteresis loops obtained with the magnetic field applied in the axis direction of the nanowires, we can observe that the coercive field slightly decreases when the nanowire length increases. This magnetic behaviour is analyzed considering the shape anisotropy and the dipolar interactions among nanowires.

Electrical and Optical Characterization of Nanowire based Semiconductor Devices

Science.gov (United States)

Ayvazian, Talin

and optimize the electrical and optical properties of two types of nanoscale devices; in first type lithographically patterned nanowire electrodeposition (LPNE) method has been utilized to fabricate nanowire field effect transistors (NWFET) and second type involved the development of light emitting semiconductor nanowire arrays (NWLED). Field effect transistors (NWFETs) have been prepared from arrays of polycrystalline cadmium selenide (pc-CdSe) nanowires using a back gate configuration. pc-CdSe nanowires were fabricated using the lithographically patterned nanowire electrode- position (LPNE) process on SiO2 /Si substrates. After electrodeposition, pc-CdSe nanowires were thermally annealed at 300 °C x 4 h either with or without exposure to CdCl2 in methanol- a grain growth promoter. The influence of CdCl2 treatment was to increase the mean grain diameter as determined by X-ray diffraction pattern and to convert the crystal structure from cubic to wurtzite. Transfer characteristics showed an increase of the field effect mobility (mueffclose to the band gap of CdSe (1.7eV). To enhance the intensity of the emitted light and the external quantum efficiency (EQE), the distance between the contacts were reduced from 5 mum to less than 1 mum which increased the efficiency by an order of magnitude. Also, increasing the annealing temperature of nanowires from 300 °C x4 h to 450 °C x 1h enhanced grain growth confirmed by structural characterization including X-ray diffraction (XRD), Scanning electron microscopy (SEM) and Raman Spectroscopy. Correspondingly the light emission intensity and EQE improved due to this grain growth. Kelvin probe force microscopy (KPFM) was utilized to understand mechanism of light emission in CdSe nanowires. Arrays of CdTe nanowires were electrodeposited using LPNE process where the elec- trodeposition of pc-CdTe was carried out at two temperatures: 20 °C (cold) and 55 °C (hot). Transmission electron microscopy (TEM) and X-ray diffraction (XRD

Optimal design of aperiodic, vertical silicon nanowire structures for photovoltaics.

Science.gov (United States)

Lin, Chenxi; Povinelli, Michelle L

2011-09-12

We design a partially aperiodic, vertically-aligned silicon nanowire array that maximizes photovoltaic absorption. The optimal structure is obtained using a random walk algorithm with transfer matrix method based electromagnetic forward solver. The optimal, aperiodic structure exhibits a 2.35 times enhancement in ultimate efficiency compared to its periodic counterpart. The spectral behavior mimics that of a periodic array with larger lattice constant. For our system, we find that randomly-selected, aperiodic structures invariably outperform the periodic array.

Catalyst-free fabrication of novel ZnO/CuO core-Shell nanowires heterojunction: Controlled growth, structural and optoelectronic properties

Science.gov (United States)

Khan, Muhammad Arif; Wahab, Yussof; Muhammad, Rosnita; Tahir, Muhammad; Sakrani, Samsudi

2018-03-01

Development of controlled growth and vertically aligned ZnO/CuO core-shell heterojunction nanowires (NWs) with large area by a catalyst free vapor deposition and oxidation approach has been investigated. Structural characterization reveals successful fabrication of a core ZnO nanowire having single crystalline hexagonal wurtzite structure along [002] direction and CuO nanostructure shell with thickness (8-10 nm) having polycrystalline monoclinic structure. The optical property analysis suggests that the reflectance spectrum of ZnO/CuO heterostructure nanowires is decreased by 18% in the visible range, which correspondingly shows high absorption in this region as compared to pristine ZnO nanowires. The current-voltage (I-V) characteristics of core-shell heterojunction nanowires measured by conductive atomic force microscopy (C-AFM) shows excellent rectifying behavior, which indicates the characteristics of a good p-n junction. The high-resolution transmission electron microscopy (HRTEM) has confirmed the sharp junction interface between the core-shell heterojunction nanowire arrays. The valence band offset and conduction band offset at ZnO/CuO heterointerfaces are measured to be 2.4 ± 0.05 and 0.23 ± 0.005 eV respectively, using X-ray photoelectron spectroscopy (XPS) and a type-II band alignment structure is found. The results of this study contribute to the development of new advanced device heterostructures for solar energy conversion and optoelectronics applications.

Influence of ion beam irradiation induced defects on the structural, optical and electrical properties of tellurium nanowires

Energy Technology Data Exchange (ETDEWEB)

Kumar, Narinder [Department of Physics, Chaudhary Devi Lal University, Sirsa, 125055 (India); Department of Physics, Haryana College of Technology & Management, Kaithal, 136027 (India); Kumar, Rajesh [Department of Physics, RN College of Engineering & Technology, Madlauda, 132104 (India); Kumar, Sushil, E-mail: sushil_phys@rediffmail.com [Department of Physics, Chaudhary Devi Lal University, Sirsa, 125055 (India); Chakarvarti, S.K. [Research and Development, Manav Rachana International University, Faridabad, 121001 (India)

2016-11-01

In this study, tellurium nanowires were electrodeposited into the polymer membranes from aqueous acidic bath containing HTeO{sub 2}{sup +} ions. The field emission scanning electron microscopy (FESEM) images confirmed the formation of uniform and straight nanowires. The influence of 110 MeV Ni{sup 8+} ion irradiation induced defects on the structural, optical and electrical properties of as–deposited tellurium nanowires were examined using X-ray diffraction (XRD), UV–visible absorption spectroscopy and current–voltage (I–V) measurements. The XRD data depicted the hexagonal phase of tellurium nanowires and further revealed a variation in the intensity of diffraction peaks of ion irradiated nanowires. Williamson–Hall (WH) analysis is used for convoluting the size and microstrain contributions to the width of diffraction peaks. Tellurium nanowires exhibited a distinct absorbance band in the visible region at 686 nm, while this was absent in bulk tellurium. Electrical properties of nanowires are explored on the basis of I–V curves, which revealed a significant increase in the electrical conductivity of irradiated nanowires. A possible mechanism for the enhanced electrical conductivity is the increase in carrier concentration due to thermally excited defects. The defects produced by ion irradiation play a vital role in modifying the properties of semiconducting nanowires. - Highlights: • 110 MeV Ni{sup 8+} ion beam induced changes in tellurium nanowires have been examined. • Nanowires were prepared using template electrodeposition method. • Irradiation improved the electrical conductivity of tellurium nanowires. • Mechanism for enhanced electrical conductivity of irradiated nanowires was discussed.

Toward optimized light utilization in nanowire arrays using scalable nanosphere lithography and selected area growth.

Science.gov (United States)

Madaria, Anuj R; Yao, Maoqing; Chi, Chunyung; Huang, Ningfeng; Lin, Chenxi; Li, Ruijuan; Povinelli, Michelle L; Dapkus, P Daniel; Zhou, Chongwu

2012-06-13

Vertically aligned, catalyst-free semiconducting nanowires hold great potential for photovoltaic applications, in which achieving scalable synthesis and optimized optical absorption simultaneously is critical. Here, we report combining nanosphere lithography (NSL) and selected area metal-organic chemical vapor deposition (SA-MOCVD) for the first time for scalable synthesis of vertically aligned gallium arsenide nanowire arrays, and surprisingly, we show that such nanowire arrays with patterning defects due to NSL can be as good as highly ordered nanowire arrays in terms of optical absorption and reflection. Wafer-scale patterning for nanowire synthesis was done using a polystyrene nanosphere template as a mask. Nanowires grown from substrates patterned by NSL show similar structural features to those patterned using electron beam lithography (EBL). Reflection of photons from the NSL-patterned nanowire array was used as a measure of the effect of defects present in the structure. Experimentally, we show that GaAs nanowires as short as 130 nm show reflection of <10% over the visible range of the solar spectrum. Our results indicate that a highly ordered nanowire structure is not necessary: despite the "defects" present in NSL-patterned nanowire arrays, their optical performance is similar to "defect-free" structures patterned by more costly, time-consuming EBL methods. Our scalable approach for synthesis of vertical semiconducting nanowires can have application in high-throughput and low-cost optoelectronic devices, including solar cells.

Structural and electronic properties of Si{sub 1–x}Ge{sub x} alloy nanowires

Energy Technology Data Exchange (ETDEWEB)

Iori, Federico [Dipartimento di Scienze e Metodi dell' Ingegneria, Centro Interdipartimentale Intermech and En and tech, Università di Modena e Reggio Emilia, via Amendola 2 Pad. Morselli, I-42122 Reggio Emilia (Italy); European Theoretical Spectroscopy Facility (ETSF) and Institut de Ciència de Materials de Barcelona (ICMAB–CSIC), Campus de Bellaterra, 08193 Bellaterra, Barcelona (Spain); Ossicini, Stefano [Dipartimento di Scienze e Metodi dell' Ingegneria, Centro Interdipartimentale Intermech and En and tech, Università di Modena e Reggio Emilia, via Amendola 2 Pad. Morselli, I-42122 Reggio Emilia (Italy); “Centro S3”, CNR-Istituto di Nanoscienze, Via Campi 213/A, 41125 Modena (Italy); Rurali, Riccardo, E-mail: rrurali@icmab.es [Institut de Ciència de Materials de Barcelona (ICMAB–CSIC), Campus de Bellaterra, 08193 Bellaterra, Barcelona (Spain)

2014-10-21

We present first-principles density-functional calculations of Si{sub 1–x}Ge{sub x} alloy nanowires. We show that given the composition of the alloy, the structural properties of the nanowires can be predicted with great accuracy by means of Vegard's law, linearly interpolating the values of a pure Si and a pure Ge nanowire of the same diameter. The same holds, to some extent, also for electronic properties such as the band-gap. We also assess to what extend the band-gap varies as a function of disorder, i.e., how it changes for different random realization of a given concentration. These results make possible to tailor the desired properties of SiGe alloy nanowires starting directly from the data relative to the pristine wires.

EDITORIAL: Nanowires for energy Nanowires for energy

Science.gov (United States)

LaPierre, Ray; Sunkara, Mahendra

2012-05-01

This special issue of Nanotechnology focuses on studies illustrating the application of nanowires for energy including solar cells, efficient lighting and water splitting. Over the next three decades, nanotechnology will make significant contributions towards meeting the increased energy needs of the planet, now known as the TeraWatt challenge. Nanowires in particular are poised to contribute significantly in this development as presented in the review by Hiralal et al [1]. Nanowires exhibit light trapping properties that can act as a broadband anti-reflection coating to enhance the efficiency of solar cells. In this issue, Li et al [2] and Wang et al [3] present the optical properties of silicon nanowire and nanocone arrays. In addition to enhanced optical properties, core-shell nanowires also have the potential for efficient charge carrier collection across the nanowire diameter as presented in the contribution by Yu et al [4] for radial junction a-Si solar cells. Hybrid approaches that combine organic and inorganic materials also have potential for high efficiency photovoltaics. A Si-based hybrid solar cell is presented by Zhang et al [5] with a photoconversion efficiency of over 7%. The quintessential example of hybrid solar cells is the dye-sensitized solar cell (DSSC) where an organic absorber (dye) coats an inorganic material (typically a ZnO nanostructure). Herman et al [6] present a method of enhancing the efficiency of a DSSC by increasing the hetero-interfacial area with a unique hierarchical weeping willow ZnO structure. The increased surface area allows for higher dye loading, light harvesting, and reduced charge recombination through direct conduction along the ZnO branches. Another unique ZnO growth method is presented by Calestani et al [7] using a solution-free and catalyst-free approach by pulsed electron deposition (PED). Nanowires can also make more efficient use of electrical power. Light emitting diodes, for example, will eventually become the

Hierarchically structured Co₃O₄@Pt@MnO₂ nanowire arrays for high-performance supercapacitors.

Science.gov (United States)

Xia, Hui; Zhu, Dongdong; Luo, Zhentao; Yu, Yue; Shi, Xiaoqin; Yuan, Guoliang; Xie, Jianping

2013-10-17

Here we proposed a novel architectural design of a ternary MnO2-based electrode - a hierarchical Co3O4@Pt@MnO2 core-shell-shell structure, where the complemental features of the three key components (a well-defined Co3O4 nanowire array on the conductive Ti substrate, an ultrathin layer of small Pt nanoparticles, and a thin layer of MnO2 nanoflakes) are strategically combined into a single entity to synergize and construct a high-performance electrode for supercapacitors. Owing to the high conductivity of the well-defined Co3O4 nanowire arrays, in which the conductivity was further enhanced by a thin metal (Pt) coating layer, in combination with the large surface area provided by the small MnO2 nanoflakes, the as-fabricated Co3O4@Pt@MnO2 nanowire arrays have exhibited high specific capacitances, good rate capability, and excellent cycling stability. The architectural design demonstrated in this study provides a new approach to fabricate high-performance MnO2-based nanowire arrays for constructing next-generation supercapacitors.

Structural study on Ni nanowires in an anodic alumina membrane by using in situ heating extended x-ray absorption fine structure and x-ray diffraction techniques

International Nuclear Information System (INIS)

Cai Quan; Chen Xing; Chen Zhongjun; Wang Wei; Mo Guang; Wu Zhonghua; Zhang Junxi; Zhang Lide; Pan Wei

2008-01-01

Polycrystalline Ni nanowires have been prepared by electrochemical deposition in an anodic alumina membrane template with a nanopore size of about 60 nm. In situ heating extended x-ray absorption fine structure and x-ray diffraction techniques are used to probe the atomic structures. The nanowires are identified as being mixtures of nanocrystallites and amorphous phase. The nanocrystallites have the same thermal expansion coefficient, of 1.7 x 10 -5 K -1 , as Ni bulk; however, the amorphous phase has a much larger thermal expansion coefficient of 3.5 x 10 -5 K -1 . Details of the Ni nanowire structures are discussed in this paper

Structural and electronic properties of InN nanowire network grown by vapor-liquid-solid method

Science.gov (United States)

Barick, B. K.; Rodríguez-Fernández, Carlos; Cantarero, Andres; Dhar, S.

2015-05-01

Growth of InN nanowires have been carried out on quartz substrates at different temperatures by vapor-liquid-solid (VLS) technique using different thicknesses of Au catalyst layer. It has been found that a narrow window of Au layer thickness and growth temperature leads to multi-nucleation, in which each site acts as the origin of several nanowires. In this multi-nucleation regime, several tens of micrometer long wires with diameter as small as 20 nm are found to grow along [ 11 2 ¯ 0 ] direction (a-plane) to form a dense network. Structural and electronic properties of these wires are studied. As grown nanowires show degenerate n-type behavior. Furthermore, x-ray photoemission study reveals an accumulation of electrons on the surface of these nanowires. Interestingly, the wire network shows persistence of photoconductivity for several hours after switching off the photoexcitation.

Structural and electronic properties of InN nanowire network grown by vapor-liquid-solid method

Energy Technology Data Exchange (ETDEWEB)

Barick, B. K., E-mail: bkbarick@gmail.com, E-mail: subho-dh@yahoo.co.in; Dhar, S., E-mail: bkbarick@gmail.com, E-mail: subho-dh@yahoo.co.in [Department of Physics, Indian Institute of Technology, Bombay, Mumbai-400076 (India); Rodríguez-Fernández, Carlos; Cantarero, Andres [Materials Science Institute, University of Valencia, PO Box 22085, 46071 Valencia (Spain)

2015-05-15

Growth of InN nanowires have been carried out on quartz substrates at different temperatures by vapor-liquid-solid (VLS) technique using different thicknesses of Au catalyst layer. It has been found that a narrow window of Au layer thickness and growth temperature leads to multi-nucleation, in which each site acts as the origin of several nanowires. In this multi-nucleation regime, several tens of micrometer long wires with diameter as small as 20 nm are found to grow along [112{sup -}0] direction (a-plane) to form a dense network. Structural and electronic properties of these wires are studied. As grown nanowires show degenerate n-type behavior. Furthermore, x-ray photoemission study reveals an accumulation of electrons on the surface of these nanowires. Interestingly, the wire network shows persistence of photoconductivity for several hours after switching off the photoexcitation.

VLS growth of alternating InAsP/InP heterostructure nanowires for multiple-quantum-dot structures.

Science.gov (United States)

Tateno, Kouta; Zhang, Guoqiang; Gotoh, Hideki; Sogawa, Tetsuomi

2012-06-13

We investigated the Au-assisted growth of alternating InAsP/InP heterostructures in wurtzite InP nanowires on InP(111)B substrates for constructing multiple-quantum-dot structures. Vertical InP nanowires without stacking faults were obtained at a high PH(3)/TMIn mole flow ratio of 300-1000. We found that the growth rate changed largely when approximately 40 min passed. Ten InAsP layers were inserted in the InP nanowire, and it was found that both the InP growth rate and the background As level increased after the As supply. We also grew the same structure using TBAs/TBP and could reduce the As level in the InP segments. A simulation using a finite-difference time-domain method suggests that the nanowire growth was dominated by the diffusion of the reaction species with long residence time on the surface. For TBAs/TBP, when the source gases were changed, the formed surface species showed a short diffusion length so as to reduce the As background after the InAsP growth.

Band structure analysis in SiGe nanowires

Energy Technology Data Exchange (ETDEWEB)

Amato, Michele [' Centro S3' , CNR-Istituto Nanoscienze, via Campi 213/A, 41100 Modena (Italy); Dipartimento di Scienze e Metodi dell' Ingegneria, Universita di Modena e Reggio Emilia, via Amendola 2 Pad. Morselli, I-42100 Reggio Emilia (Italy); Palummo, Maurizia [European Theoretical Spectroscopy Facility (ETSF) (Italy); CNR-INFM-SMC, Dipartimento di Fisica, Universita di Roma, ' Tor Vergata' , via della Ricerca Scientifica 1, 00133 Roma (Italy); Ossicini, Stefano, E-mail: stefano.ossicini@unimore.it [' Centro S3' , CNR-Istituto Nanoscienze, via Campi 213/A, 41100 Modena (Italy) and Dipartimento di Scienze e Metodi dell' Ingegneria, Universita di Modena e Reggio Emilia, via Amendola 2 Pad. Morselli, I-42100 Reggio Emilia (Italy) and European Theoretical Spectroscopy Facility - ETSF (Italy) and Centro Interdipartimentale ' En and Tech' , Universita di Modena e Reggio Emilia, via Amendola 2 Pad. Morselli, I-42100 Reggio Emilia (Italy)

2012-06-05

One of the main challenges for Silicon-Germanium nanowires (SiGe NWs) electronics is the possibility to modulate and engine their electronic properties in an easy way, in order to obtain a material with the desired electronic features. Diameter and composition constitute two crucial ways for the modification of the band gap and of the band structure of SiGe NWs. Within the framework of density functional theory we present results of ab initio calculations regarding the band structure dependence of SiGe NWs on diameter and composition. We point out the main differences with respect to the case of pure Si and Ge wires and we discuss the particular features of SiGe NWs that are useful for future technological applications.

Band structure analysis in SiGe nanowires

International Nuclear Information System (INIS)

Amato, Michele; Palummo, Maurizia; Ossicini, Stefano

2012-01-01

One of the main challenges for Silicon-Germanium nanowires (SiGe NWs) electronics is the possibility to modulate and engine their electronic properties in an easy way, in order to obtain a material with the desired electronic features. Diameter and composition constitute two crucial ways for the modification of the band gap and of the band structure of SiGe NWs. Within the framework of density functional theory we present results of ab initio calculations regarding the band structure dependence of SiGe NWs on diameter and composition. We point out the main differences with respect to the case of pure Si and Ge wires and we discuss the particular features of SiGe NWs that are useful for future technological applications.

Vertically aligned nanowires from boron-doped diamond.

Science.gov (United States)

Yang, Nianjun; Uetsuka, Hiroshi; Osawa, Eiji; Nebel, Christoph E

2008-11-01

Vertically aligned diamond nanowires with controlled geometrical properties like length and distance between wires were fabricated by use of nanodiamond particles as a hard mask and by use of reactive ion etching. The surface structure, electronic properties, and electrochemical functionalization of diamond nanowires were characterized by atomic force microscopy (AFM) and scanning tunneling microscopy (STM) as well as electrochemical techniques. AFM and STM experiments show that diamond nanowire etched for 10 s have wire-typed structures with 3-10 nm in length and with typically 11 nm spacing in between. The electrode active area of diamond nanowires is enhanced by a factor of 2. The functionalization of nanowire tips with nitrophenyl molecules is characterized by STM on clean and on nitrophenyl molecule-modified diamond nanowires. Tip-modified diamond nanowires are promising with respect to biosensor applications where controlled biomolecule bonding is required to improve chemical stability and sensing significantly.

Manipulation of Optoelectronic Properties and Band Structure Engineering of Ultrathin Te Nanowires by Chemical Adsorption.

Science.gov (United States)

Roy, Ahin; Amin, Kazi Rafsanjani; Tripathi, Shalini; Biswas, Sangram; Singh, Abhishek K; Bid, Aveek; Ravishankar, N

2017-06-14

Band structure engineering is a powerful technique both for the design of new semiconductor materials and for imparting new functionalities to existing ones. In this article, we present a novel and versatile technique to achieve this by surface adsorption on low dimensional systems. As a specific example, we demonstrate, through detailed experiments and ab initio simulations, the controlled modification of band structure in ultrathin Te nanowires due to NO 2 adsorption. Measurements of the temperature dependence of resistivity of single ultrathin Te nanowire field-effect transistor (FET) devices exposed to increasing amounts of NO 2 reveal a gradual transition from a semiconducting to a metallic state. Gradual quenching of vibrational Raman modes of Te with increasing concentration of NO 2 supports the appearance of a metallic state in NO 2 adsorbed Te. Ab initio simulations attribute these observations to the appearance of midgap states in NO 2 adsorbed Te nanowires. Our results provide fundamental insights into the effects of ambient on the electronic structures of low-dimensional materials and can be exploited for designing novel chemical sensors.

Rare earth silicide nanowires on silicon surfaces

International Nuclear Information System (INIS)

Wanke, Martina

2008-01-01

The growth, structure and electronic properties of rare earth silicide nanowires are investigated on planar and vicinal Si(001) und Si(111) surfaces with scanning tunneling microscopy (STM), low energy electron diffraction (LEED) and angle-resolved photoelectron spectroscopy (ARPES). On all surfaces investigated within this work hexagonal disilicides are grown epitaxially with a lattice mismatch of -2.55% up to +0.83% along the hexagonal a-axis. Along the hexagonal c-axis the lattice mismatch is essentially larger with 6.5%. On the Si(001)2 x 1 surface two types of nanowires are grown epitaxially. The socalled broad wires show a one-dimensional metallic valence band structure with states crossing the Fermi level. Along the nanowires two strongly dispersing states at the anti J point and a strongly dispersing state at the anti Γ point can be observed. Along the thin nanowires dispersing states could not be observed. Merely in the direction perpendicular to the wires an intensity variation could be observed, which corresponds to the observed spacial structure of the thin nanowires. The electronic properties of the broad erbium silicide nanowires are very similar to the broad dysprosium silicide nanowires. The electronic properties of the DySi 2 -monolayer and the Dy 3 Si 5 -multilayer on the Si(111) surface are investigated in comparison to the known ErSi 2 /Si(111) and Er 3 Si 5 /Si(111) system. The positions and the energetic locations of the observed band in the surface Brillouin zone will be confirmed for dysprosium. The shape of the electron pockets in the vector k parallel space is elliptical at the anti M points, while the hole pocket at the anti Γ point is showing a hexagonal symmetry. On the Si(557) surface the structural and electronic properties depend strongly on the different preparation conditions likewise, in particular on the rare earth coverage. At submonolayer coverage the thin nanowires grow in wide areas of the sample surface, which are oriented

Structural and electronic properties of InN nanowire network grown by vapor-liquid-solid method

Directory of Open Access Journals (Sweden)

B. K. Barick

2015-05-01

Full Text Available Growth of InN nanowires have been carried out on quartz substrates at different temperatures by vapor-liquid-solid (VLS technique using different thicknesses of Au catalyst layer. It has been found that a narrow window of Au layer thickness and growth temperature leads to multi-nucleation, in which each site acts as the origin of several nanowires. In this multi-nucleation regime, several tens of micrometer long wires with diameter as small as 20 nm are found to grow along [ 11 2 ̄ 0 ] direction (a-plane to form a dense network. Structural and electronic properties of these wires are studied. As grown nanowires show degenerate n-type behavior. Furthermore, x-ray photoemission study reveals an accumulation of electrons on the surface of these nanowires. Interestingly, the wire network shows persistence of photoconductivity for several hours after switching off the photoexcitation.

Designing robust alumina nanowires-on-nanopores structures: superhydrophobic surfaces with slippery or sticky water adhesion.

Science.gov (United States)

Peng, Shan; Tian, Dong; Miao, Xinrui; Yang, Xiaojun; Deng, Wenli

2013-11-01

Hierarchical alumina surfaces with different morphologies were fabricated by a simple one-step anodization method. These alumina films were fabricated by a new raw material: silica gel plate (aluminum foil with a low purity of 97.17%). The modulation of anodizing time enabled the formation of nanowires-on-nanopores hybrid nanostructures having controllable nanowires topographies through a self-assembly process. The resultant structures were demonstrated to be able to achieve superhydrophobicity without any hydrophobic coating layer. More interestingly, it is found that the as-prepared superhydrophobic alumina surfaces exhibited high contrast water adhesion. Hierarchical alumina film with nanowire bunches-on-nanopores (WBOP) morphology presents extremely slippery property which can obtain a sliding angle (SA) as low as 1°, nanowire pyramids-on-nanopores (WPOP) structure shows strongly sticky water adhesion with the adhesive ability to support 15 μL inverted water droplet at most. The obtained superhydrophobic alumina surfaces show remarkable mechanical durability even treated by crimping or pressing without impact on the water-repellent performance. Moreover, the created surfaces also show excellent resistivity to ice water, boiling water, high temperature, organic solvent and oil contamination, which could expand their usefulness and efficacy in harsh conditions. Copyright © 2013 Elsevier Inc. All rights reserved.

Electronic transport in narrow-gap semiconductor nanowires

International Nuclear Information System (INIS)

Bloemers, Christian

2012-01-01

Throughout this work the electronic transport properties of InAs, InN, and GaAs/InAs core/shell nanowires have been analyzed. This includes the analysis of specific resistivity at room temperature and low temperatures as well as the breakdown of resistivity by a contribution of mobility and carrier concentration using gate measurements. While the InN nanowires showed homogeneous transport properties, there was a large statistical spread in the properties of InAs nanowires. Differing crystal structures and the surface conditions are identified to be the main reasons for the statistical spread. Both quantities of influence have been pointed out by comparing the transport parameters before and after a surface treatment (electron irradiation and long time ambient air exposure), and by comparing the transport parameters of wires grown by different growth methods which exhibit different kinds of crystal structure. In particular, the temperature dependence of the conductivity revealed different activation energies in nanowires with differing crystal structures. An explanation has been suggested in terms of stacking fault induced potential barriers. A field-effect measurement setup has been utilized to determine the nanowire mobility and carrier concentration. Even though this method is widely used for nanowires, it is subject to a serious disadvantage concerning the influence of surface and interface states on the measurements. As an alternative method which does not suffer from this drawback, Hall measurements have been successfully performed on InAs nanowires for the first time. These measurements became possible because of the utilization of a new electron beam lithographic procedure with an alignment accuracy in the 5 nm range. Carrier concentration values could be determined and compared to the ones obtained from conventional field-effect measurements. The results of the Hall measurements revealed a methodical overestimation of the carrier concentrations obtained

Electronic transport in narrow-gap semiconductor nanowires

Energy Technology Data Exchange (ETDEWEB)

Bloemers, Christian

2012-10-19

Throughout this work the electronic transport properties of InAs, InN, and GaAs/InAs core/shell nanowires have been analyzed. This includes the analysis of specific resistivity at room temperature and low temperatures as well as the breakdown of resistivity by a contribution of mobility and carrier concentration using gate measurements. While the InN nanowires showed homogeneous transport properties, there was a large statistical spread in the properties of InAs nanowires. Differing crystal structures and the surface conditions are identified to be the main reasons for the statistical spread. Both quantities of influence have been pointed out by comparing the transport parameters before and after a surface treatment (electron irradiation and long time ambient air exposure), and by comparing the transport parameters of wires grown by different growth methods which exhibit different kinds of crystal structure. In particular, the temperature dependence of the conductivity revealed different activation energies in nanowires with differing crystal structures. An explanation has been suggested in terms of stacking fault induced potential barriers. A field-effect measurement setup has been utilized to determine the nanowire mobility and carrier concentration. Even though this method is widely used for nanowires, it is subject to a serious disadvantage concerning the influence of surface and interface states on the measurements. As an alternative method which does not suffer from this drawback, Hall measurements have been successfully performed on InAs nanowires for the first time. These measurements became possible because of the utilization of a new electron beam lithographic procedure with an alignment accuracy in the 5 nm range. Carrier concentration values could be determined and compared to the ones obtained from conventional field-effect measurements. The results of the Hall measurements revealed a methodical overestimation of the carrier concentrations obtained

Quantum optics with nanowires (Conference Presentation)

Science.gov (United States)

Zwiller, Val

2017-02-01

Nanowires offer new opportunities for nanoscale quantum optics; the quantum dot geometry in semiconducting nanowires as well as the material composition and environment can be engineered with unprecedented freedom to improve the light extraction efficiency. Quantum dots in nanowires are shown to be efficient single photon sources, in addition because of the very small fine structure splitting, we demonstrate the generation of entangled pairs of photons from a nanowire. By doping a nanowire and making ohmic contacts on both sides, a nanowire light emitting diode can be obtained with a single quantum dot as the active region. Under forward bias, this will act as an electrically pumped source of single photons. Under reverse bias, an avalanche effect can multiply photocurrent and enables the detection of single photons. Another type of nanowire under study in our group is superconducting nanowires for single photon detection, reaching efficiencies, time resolution and dark counts beyond currently available detectors. We will discuss our first attempts at combining semiconducting nanowire based single photon emitters and superconducting nanowire single photon detectors on a chip to realize integrated quantum circuits.

Solution-processed core-shell nanowires for efficient photovoltaic cells.

Science.gov (United States)

Tang, Jinyao; Huo, Ziyang; Brittman, Sarah; Gao, Hanwei; Yang, Peidong

2011-08-21

Semiconductor nanowires are promising for photovoltaic applications, but, so far, nanowire-based solar cells have had lower efficiencies than planar cells made from the same materials, even allowing for the generally lower light absorption of nanowires. It is not clear, therefore, if the benefits of the nanowire structure, including better charge collection and transport and the possibility of enhanced absorption through light trapping, can outweigh the reductions in performance caused by recombination at the surface of the nanowires and at p-n junctions. Here, we fabricate core-shell nanowire solar cells with open-circuit voltage and fill factor values superior to those reported for equivalent planar cells, and an energy conversion efficiency of ∼5.4%, which is comparable to that of equivalent planar cells despite low light absorption levels. The device is made using a low-temperature solution-based cation exchange reaction that creates a heteroepitaxial junction between a single-crystalline CdS core and single-crystalline Cu2S shell. We integrate multiple cells on single nanowires in both series and parallel configurations for high output voltages and currents, respectively. The ability to produce efficient nanowire-based solar cells with a solution-based process and Earth-abundant elements could significantly reduce fabrication costs relative to existing high-temperature bulk material approaches.

Geometrical and band-structure effects on phonon-limited hole mobility in rectangular cross-sectional germanium nanowires

International Nuclear Information System (INIS)

Tanaka, H.; Mori, S.; Morioka, N.; Suda, J.; Kimoto, T.

2014-01-01

We calculated the phonon-limited hole mobility in rectangular cross-sectional [001], [110], [111], and [112]-oriented germanium nanowires, and the hole transport characteristics were investigated. A tight-binding approximation was used for holes, and phonons were described by a valence force field model. Then, scattering probability of holes by phonons was calculated taking account of hole-phonon interaction atomistically, and the linearized Boltzmann's transport equation was solved to calculate the hole mobility at low longitudinal field. The dependence of the hole mobility on nanowire geometry was analyzed in terms of the valence band structure of germanium nanowires, and it was found that the dependence was qualitatively reproduced by considering an average effective mass and the density of states of holes. The calculation revealed that [110] germanium nanowires with large height along the [001] direction show high hole mobility. Germanium nanowires with this geometry are also expected to exhibit high electron mobility in our previous work, and thus they are promising for complementary metal-oxide-semiconductor (CMOS) applications

Gold nanowires and the effect of impurities

Directory of Open Access Journals (Sweden)

Novaes Frederico

2006-01-01

Full Text Available AbstractMetal nanowires and in particular gold nanowires have received a great deal of attention in the past few years. Experiments on gold nanowires have prompted theory and simulation to help answer questions posed by these studies. Here we present results of computer simulations for the formation, evolution and breaking of very thin Au nanowires. We also discuss the influence of contaminants, such as atoms and small molecules, and their effect on the structural and mechanical properties of these nanowires.

Rare earth silicide nanowires on silicon surfaces

Energy Technology Data Exchange (ETDEWEB)

Wanke, Martina

2008-11-10

The growth, structure and electronic properties of rare earth silicide nanowires are investigated on planar and vicinal Si(001) und Si(111) surfaces with scanning tunneling microscopy (STM), low energy electron diffraction (LEED) and angle-resolved photoelectron spectroscopy (ARPES). On all surfaces investigated within this work hexagonal disilicides are grown epitaxially with a lattice mismatch of -2.55% up to +0.83% along the hexagonal a-axis. Along the hexagonal c-axis the lattice mismatch is essentially larger with 6.5%. On the Si(001)2 x 1 surface two types of nanowires are grown epitaxially. The socalled broad wires show a one-dimensional metallic valence band structure with states crossing the Fermi level. Along the nanowires two strongly dispersing states at the anti J point and a strongly dispersing state at the anti {gamma} point can be observed. Along the thin nanowires dispersing states could not be observed. Merely in the direction perpendicular to the wires an intensity variation could be observed, which corresponds to the observed spacial structure of the thin nanowires. The electronic properties of the broad erbium silicide nanowires are very similar to the broad dysprosium silicide nanowires. The electronic properties of the DySi{sub 2}-monolayer and the Dy{sub 3}Si{sub 5}-multilayer on the Si(111) surface are investigated in comparison to the known ErSi{sub 2}/Si(111) and Er{sub 3}Si{sub 5}/Si(111) system. The positions and the energetic locations of the observed band in the surface Brillouin zone will be confirmed for dysprosium. The shape of the electron pockets in the (vector)k {sub parallel} space is elliptical at the anti M points, while the hole pocket at the anti {gamma} point is showing a hexagonal symmetry. On the Si(557) surface the structural and electronic properties depend strongly on the different preparation conditions likewise, in particular on the rare earth coverage. At submonolayer coverage the thin nanowires grow in wide areas

Vibration of Piezoelectric Nanowires Including Surface Effects

Directory of Open Access Journals (Sweden)

R. Ansari

2014-04-01

Full Text Available In this paper, surface and piezoelectric effects on the vibration behavior of nanowires (NWs are investigated by using a Timoshenko beam model. The electric field equations and the governing equations of motion for the piezoelectric NWs are derived with the consideration of surface effects. By the exact solution of the governing equations, an expression for the natural frequencies of NWs with simply-supported boundary conditions is obtained. The effects of piezoelectricity and surface effects on the vibrational behavior of Timoshenko NWs are graphically illustrated. A comparison is also made between the predictions of Timoshenko beam model and those of its Euler-Bernoulli counterpart. Additionally, the present results are validated through comparison with the available data in the literature.

The Self- and Directed Assembly of Nanowires

Science.gov (United States)

Smith, Benjamin David

alignment with respect to nearest neighbor particles. All experiments showed order parameters indicating a slight preference for orientational ordering that was relatively insensitive to segment size, nanowire size, and nanowire coating. Monte Carlo simulations pointed towards this alignment as a consequence of small differences in the van der Waals attractions between the segments. Experimentally, ordering might to be limited by the large size of the nanowires, which results in kinetically trapped structures. In an attempt to obtain better ordering within rows, silica coated nanowires with partial Au cores were made. The synthesis involved silica-coating the nanowires and selectively etching a Ag segment. These particles have extremely different VDWs attractions between their segments, as the Au cores are much more attractive than the solvent-filled etched ends. The assembly of these partially etched nanowires (PENs) is detailed in Chapters 4, 5, and 6. When allowed to self-assemble, we observed the formation of either vertically or horizontally oriented arrays depending on PEN composition. The formation of vertically oriented arrays of anisotropic particles is important, since not many methods to produce these structures are currently available for particles of this size. We examined the effects of PEN length, PEN diameter, and the size, number, and location of the core segments. Our findings showed a large etched segment at one end (which resulted in a large offset in the center of mass and concentrated the VDWs attractions to one end of the particle) resulted in the best columnar assemblies. These vertically orientated arrays formed in a two part process. First, after PENs sedimented, they fell flat and oriented parallel to the surface. These PENs then sampled many orientations, including rotating out of the surface plane. When higher surface concentrations of particles built as more PENs fell to the surface of the cover slip, neighboring particles stabilized vertical

Nanowire-decorated microscale metallic electrodes

DEFF Research Database (Denmark)

Vlad, A.; Mátéfi-Tempfli, M.; Antohe, V.A.

2008-01-01

The fabrication of metallic nanowire patterns within anodic alumina oxide (AAO) membranes on top of continuous conducting substrates are discussed. The fabrication protocol is based on the realization of nanowire patterns using supported nanoporous alumina templates (SNAT) prepared on top...... of lithographically defined metallic microelectrodes. The anodization of the aluminum permits electroplating only on top of the metallic electrodes, leading to the nanowire patterns having the same shape as the underlying metallic tracks. The variation in the fabricated structures between the patterned and non......-patterned substrates can be interpreted in terms of different behavior during anodization. The improved quality of fabricated nanowire patterns is clearly demonstrated by the SEM imaging and the uniform growth of nanowires inside the alumina template is observed without any significant height variation....

Structural and magnetic characterization of as-prepared and annealed FeCoCu nanowire arrays in ordered anodic aluminum oxide templates

International Nuclear Information System (INIS)

Rodríguez-González, B.; Bran, C.; Warnatz, T.; Vazquez, M.; Rivas, J.

2014-01-01

Herein, we report on the preparation, structure, and magnetic characterization of FeCoCu nanowire arrays grown by DC electrodeposition inside self-assembled ordered nanopores of anodic aluminum oxide templates. A systematic study of their structure has been performed both in as-prepared samples and after annealing in the temperature range up to 800 °C, although particular attention has been paid to annealing at 700 °C after which maximum magnetic hardening is achieved. The obtained nanowires have a diameter of 40 nm and their Fe 0.28 Co 0.67 Cu 0.05 composition was confirmed by energy dispersive X-ray spectroscopy (EDS). Focused ion-beam lamellas of two samples (as-prepared and annealed at 700 °C) were prepared for their imaging in the high-resolution transmission electron microscopy (HRTEM) perpendicularly to the electron beam, where the obtained EDS compositional mappings show a homogeneous distribution of the elements. X-ray diffraction analysis, and selected area electron diffraction (SAED) patterns confirm that nanowires exhibit a bcc cubic structure (space group Im-3m). In addition, bright-dark field images show that the nanowires have a polycrystalline structure that remains essentially the same after annealing, but some modifications were observed: (i) an overall increase and sharpening of recrystallized grains, and (ii) an apparent shrinkage of the nanowires diameter. Obtained SAED patterns also show strong textured components with determined and crystalline directions parallel to the wires growth direction. The presence of both directions was also confirmed in the HRTEM images doing Fourier transform analyses. Magnetic measurements show strong magnetic anisotropy with magnetization easy axis parallel to the nanowires in as-prepared and annealed samples. The magnetic properties are tuned by suitable thermal treatments so that, maximum enhanced coercivity (∼2.7 kOe) and normalized remanence (∼0.91 Ms) values are achieved after annealing at

Structural and photoluminescence investigation on the hot-wire assisted plasma enhanced chemical vapor deposition growth silicon nanowires

International Nuclear Information System (INIS)

Chong, Su Kong; Goh, Boon Tong; Wong, Yuen-Yee; Nguyen, Hong-Quan; Do, Hien; Ahmad, Ishaq; Aspanut, Zarina; Muhamad, Muhamad Rasat; Dee, Chang Fu; Rahman, Saadah Abdul

2012-01-01

High density of silicon nanowires (SiNWs) were synthesized by a hot-wire assisted plasma enhanced chemical vapor deposition technique. The structural and optical properties of the as-grown SiNWs prepared at different rf power of 40 and 80 W were analyzed in this study. The SiNWs prepared at rf power of 40 W exhibited highly crystalline structure with a high crystal volume fraction, X C of ∼82% and are surrounded by a thin layer of SiO x . The NWs show high absorption in the high energy region (E>1.8 eV) and strong photoluminescence at 1.73 to 2.05 eV (red–orange region) with a weak shoulder at 1.65 to 1.73 eV (near IR region). An increase in rf power to 80 W reduced the X C to ∼65% and led to the formation of nanocrystalline Si structures with a crystallite size of <4 nm within the SiNWs. These NWs are covered by a mixture of uncatalyzed amorphous Si layer. The SiNWs prepared at 80 W exhibited a high optical absorption ability above 99% in the broadband range between 220 and ∼1500 nm and red emission between 1.65 and 1.95 eV. The interesting light absorption and photoluminescence properties from both SiNWs are discussed in the text. - Highlights: ► Growth of random oriented silicon nanowires using hot-wire assisted plasma enhanced chemical vapor deposition. ► Increase in rf power reduces the crystallinity of silicon nanowires. ► High density and nanocrystalline structure in silicon nanowires significant enhance the near IR light absorption. ► Oxide defects and silicon nanocrystallites in silicon nanowires reveal photoluminescence in red–orange and red regions.

Porous Silicon Nanowires

Science.gov (United States)

Qu, Yongquan; Zhou, Hailong; Duan, Xiangfeng

2011-01-01

In this minreview, we summarize recent progress in the synthesis, properties and applications of a new type of one-dimensional nanostructures — single crystalline porous silicon nanowires. The growth of porous silicon nanowires starting from both p- and n-type Si wafers with a variety of dopant concentrations can be achieved through either one-step or two-step reactions. The mechanistic studies indicate the dopant concentration of Si wafers, oxidizer concentration, etching time and temperature can affect the morphology of the as-etched silicon nanowires. The porous silicon nanowires are both optically and electronically active and have been explored for potential applications in diverse areas including photocatalysis, lithium ion battery, gas sensor and drug delivery. PMID:21869999

Moessbauer study of Fe-Co nanowires

Energy Technology Data Exchange (ETDEWEB)

Chen Ziyu [Key Laboratory for Magnetism and Magnetic Materials of the Ministry of Education, Lanzhou University, Lanzhou (China)]. E-mail: chenzy@lzu.edu.cn; Zhan Qingfeng; Xue Desheng; Li Fashen [Key Laboratory for Magnetism and Magnetic Materials of the Ministry of Education, Lanzhou University, Lanzhou (China); Zhou Xuezhi; Kunkel, Henry; Williams, Gwyn [Department of Physics and Astronomy, the University of Manitoba (Canada)

2002-01-28

Arrays of Fe{sub 1-x}Co{sub x} (0.0{<=}x{<=}0.92) nanowires have been prepared by an electrochemical process, co-depositing Fe and Co atoms into the pores of anodic aluminium; their compositions were determined by atomic absorption spectroscopy. Transmission electron microscope results show that the nanowires are regularly spaced and uniform in shape with lengths of about 7.5 {mu}m and diameters of 20 nm. The x-ray diffraction indicates a texture in the deposited nanowires. For the composition below 82 at.% cobalt, the nanowires had a body-centred-cubic structure with a [110] preferred orientation. For the 92 at.% cobalt sample, the alloy exhibited a mixture of bcc and face-centred-cubic structure. The room temperature {sup 57}Fe Moessbauer spectra of the arrays of Fe{sub 1-x}Co{sub x} nanowires have second and fifth absorption lines of the six-line pattern with almost zero intensity, indicating that the internal magnetic field in the nanowires lies along the long axis of the nanowire. The maximum values of the hyperfine field (B{sub hf} 36.6{+-}0.1 T) and isomer shift (IS=0.06{+-}0.01 mm s-1) occur for 44 at.% cobalt. The variations of the isomer shift and the linewidths with composition indicate that the Fe{sub 1-x}Co{sub x} alloy nanowires around the equiatomic composition are in an atomistic disordered state. (author)

Two-dimensional nanowires on homoepitaxial interfaces: Atomic-scale mechanism of breakdown and disintegration

Science.gov (United States)

Michailov, Michail; Ranguelov, Bogdan

2018-03-01

We present a model for hole-mediated spontaneous breakdown of ahomoepitaxial two-dimensional (2D) flat nanowire based exclusively on random, thermally-activated motion of atoms. The model suggests a consecutive three-step mechanism driving the rupture and complete disintegration of the nanowire on a crystalline surface. The breakdown scenario includes: (i) local narrowing of a part of the stripe to a monatomic chain, (ii) formation of a recoverable single vacancy or a 2D vacancy cluster that causes temporary nanowire rupture, (iii) formation of a non-recoverable 2D hole leading to permanent nanowire breakdown. These successive events in the temporal evolution of the nanowire morphology bring the nanowire stripe into an irreversible unstable state, leading to a dramatic change in its peculiar physical properties and conductivity. The atomistic simulations also reveal a strong increase of the nanowire lifetime with an enlargement of its width and open up a way for a fine atomic-scale control of the nanowire lifetime and structural, morphological and thermodynamic stability.

Predictive simulations and optimization of nanowire field-effect PSA sensors including screening

KAUST Repository

Baumgartner, Stefan; Heitzinger, Clemens; Vacic, Aleksandar; Reed, Mark A

2013-01-01

We apply our self-consistent PDE model for the electrical response of field-effect sensors to the 3D simulation of nanowire PSA (prostate-specific antigen) sensors. The charge concentration in the biofunctionalized boundary layer at the semiconductor-electrolyte interface is calculated using the propka algorithm, and the screening of the biomolecules by the free ions in the liquid is modeled by a sensitivity factor. This comprehensive approach yields excellent agreement with experimental current-voltage characteristics without any fitting parameters. Having verified the numerical model in this manner, we study the sensitivity of nanowire PSA sensors by changing device parameters, making it possible to optimize the devices and revealing the attributes of the optimal field-effect sensor. © 2013 IOP Publishing Ltd.

Predictive simulations and optimization of nanowire field-effect PSA sensors including screening

KAUST Repository

Baumgartner, Stefan

2013-05-03

We apply our self-consistent PDE model for the electrical response of field-effect sensors to the 3D simulation of nanowire PSA (prostate-specific antigen) sensors. The charge concentration in the biofunctionalized boundary layer at the semiconductor-electrolyte interface is calculated using the propka algorithm, and the screening of the biomolecules by the free ions in the liquid is modeled by a sensitivity factor. This comprehensive approach yields excellent agreement with experimental current-voltage characteristics without any fitting parameters. Having verified the numerical model in this manner, we study the sensitivity of nanowire PSA sensors by changing device parameters, making it possible to optimize the devices and revealing the attributes of the optimal field-effect sensor. © 2013 IOP Publishing Ltd.

Structure and magnetic properties of CoxCu1−x nanowires in self-assembled arrays

International Nuclear Information System (INIS)

Almasi Kashi, M.; Ramazani, A.; Adelnia Najafabadi, F.

2012-01-01

Highlights: ► Role of non-magnetic Cu on the microstructure and magnetic properties of Co x Cu 1−x nanowires. ► Composition variation through ac pulse electrodeposition. ► Replacement of Co with Cu by electroless phenomenon during the off-time between pulses. - Abstract: CoCu alloy nanowire arrays were ac-pulse electrodeposited into porous anodic aluminum oxide. The effect of off-time between pulses and Cu concentration on the magnetic properties, crystalline structure and weight percentage of Co x Cu 1−x alloy nanowires have been studied by alternating gradient force magnetometer (AGFM), X-ray diffraction pattern (XRD) and energy dispersed spectrometry (EDS), respectively. Increasing the off-time between pulses decreased the weight percentage of Co in the range of (x = 0.84 − 0.24). Results of EDS were in accordance with saturation magnetization per unit area of the samples. Coexistence of a moderate off-time and Cu concentration provided excellent conditions for fabrication of the composite nanowires which were proved by XRD patterns.

Atomic-scale nanowires: physical and electronic structure

International Nuclear Information System (INIS)

Bowler, D R

2004-01-01

The technology to build and study nanowires with sizes ranging from individual atoms to tens of nanometres has been developing rapidly over the last few years. We survey the motivation behind these developments, and summarize the basics behind quantized conduction. Several of the different experimental techniques and materials systems used in the creation of nanowires are examined, and the range of theoretical methods developed both for examining open systems (especially their conduction properties) and for modelling large systems are considered. We present various noteworthy example results from the field, before concluding with a look at future directions. (topical review)

Electrochemical synthesis of highly crystalline copper nanowires

International Nuclear Information System (INIS)

Kaur, Amandeep; Gupta, Tanish; Kumar, Akshay; Kumar, Sanjeev; Singh, Karamjeet; Thakur, Anup

2015-01-01

Copper nanowires were fabricated within the pores of anodic alumina template (AAT) by template synthesis method at pH = 2.9. X-ray diffraction (XRD), scanning electron microscopy (SEM) and energy dispersive spectroscopy (EDS) were used to investigate the structure, morphology and composition of fabricated nanowires. These characterizations revealed that the deposited copper nanowires were highly crystalline in nature, dense and uniform. The crystalline copper nanowires are promising in application of future nanoelectronic devices and circuits

Electron Transport Properties of Ge nanowires

Science.gov (United States)

Hanrath, Tobias; Khondaker, Saiful I.; Yao, Zhen; Korgel, Brian A.

2003-03-01

Electron Transport Properties of Ge nanowires Tobias Hanrath*, Saiful I. Khondaker, Zhen Yao, Brian A. Korgel* *Dept. of Chemical Engineering, Dept. of Physics, Texas Materials Institute, and Center for Nano- and Molecular Science and Technology University of Texas at Austin, Austin, Texas 78712-1062 e-mail: korgel@mail.che.utexas.edu Germanium (Ge) nanowires with diameters ranging from 6 to 50 nm and several micrometer in length were grown via a supercritical fluid-liquid-solid synthesis. Parallel electron energy loss spectroscopy (PEELS) was employed to study the band structure and electron density in the Ge nanowires. The observed increase in plasmon peak energy and peak width with decreasing nanowire diameter is attributed to quantum confinement effects. For electrical characterization, Ge nanowires were deposited onto a patterned Si/SiO2 substrate. E-beam lithography was then used to form electrode contacts to individual nanowires. The influence of nanowire diameter, surface chemistry and crystallographic defects on electron transport properties were investigated and the comparison of Ge nanowire conductivity with respect to bulk, intrinsic Ge will be presented.

Electronic and magnetic properties of ultrathin rhodium nanowires

CERN Document Server

Wang Bao Lin; Ren-Yun; Sun Hou Qian; Chen Xiao Shuang; Zhao Ji Jun

2003-01-01

The structures of ultrathin rhodium nanowires are studied using empirical molecular dynamics simulations with a genetic algorithm. Helical multishell cylindrical and pentagonal packing structures are found. The electronic and magnetic properties of the rhodium nanowires are calculated using an spd tight-binding Hamiltonian in the unrestricted Hartree-Fock approximation. The average magnetic moment and electronic density of states are obtained. Our results indicate that the electronic and magnetic properties of the rhodium nanowires depend not only on the size of the wire but also on the atomic structure. In particular, centred pentagonal and hexagonal structures can be unusually ferromagnetic.

Platinum boride nanowires: Synthesis and characterization

International Nuclear Information System (INIS)

Ding Zhanhui; Qiu Lixia; Zhang Jian; Yao Bin; Cui Tian; Guan Weiming; Zheng Weitao; Wang Wenquan; Zhao Xudong; Liu Xiaoyang

2012-01-01

Highlights: ► Platinum boride nanowires have been synthesized via the direct current arc discharge method. ► XRD, TEM and SAED indicate that the nanowires are single-crystal PtB. ► Two broad photoluminescence emission peaks at about 586 nm and 626 nm have been observed in the PL spectroscopy of PtB nanowires. - Abstract: Platinum boride (PtB) nanowires have been successfully fabricated with direct current arc discharge method using a milled mixture of platinum (Pt) and boron nitride (BN) powders. X-ray diffraction (XRD), scanning electron microscopy (SEM) and transmission electron microscopy (TEM) were used to characterize the compositions, morphology, and structures of the samples. The results show that PtB nanowires are 30–50 nm thick and 20–30 μm long. TEM and selected area electron diffraction (SAED) patterns identify that the PtB nanowires are single-crystalline in nature. A growth mechanism based on vapor–liquid–solid (VLS) process is proposed for the formation of nanowires.

Improving emission uniformity and linearizing band dispersion in nanowire arrays using quasi-aperiodicity

Energy Technology Data Exchange (ETDEWEB)

Anderson, P. Duke [Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States); Univ. of Southern California, Los Angeles, CA (United States). Ming Hsieh Dept. of Electrical Engineering; Koleske, Daniel D. [Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States); Povinelli, Michelle L. [Univ. of Southern California, Los Angeles, CA (United States). Ming Hsieh Dept. of Electrical Engineering; Subramania, Ganapathi [Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)

2017-10-01

For this study, we experimentally investigate a new class of quasi-aperiodic structures for improving the emission pattern in nanowire arrays. Efficient normal emission, as well as lasing, can be obtained from III-nitride photonic crystal (PhC) nanowire arrays that utilize slow group velocity modes near the Γ-point in reciprocal space. However, due to symmetry considerations, the emitted far-field pattern of such modes are often ‘donut’-like. Many applications, including lighting for displays or lasers, require a more uniform beam profile in the far-field. Previous work has improved far-field beam uniformity of uncoupled modes by changing the shape of the emitting structure. However, in nanowire systems, the shape of nanowires cannot always be arbitrarily changed due to growth or etch considerations. Here, we investigate breaking symmetry by instead changing the position of emitters. Using a quasi-aperiodic geometry, which changes the emitter position within a photonic crystal supercell (2x2), we are able to linearize the photonic bandstructure near the Γ-point and greatly improve emitted far-field uniformity. We realize the III-nitride nanowires structures using a top-down fabrication procedure that produces nanowires with smooth, vertical sidewalls. Comparison of room-temperature micro-photoluminescence (µ-PL) measurements between periodic and quasi-aperiodic nanowire arrays reveal resonances in each structure, with the simple periodic structure producing a donut beam in the emitted far-field and the quasi-aperiodic structure producing a uniform Gaussian-like beam. We investigate the input pump power vs. output intensity in both systems and observe the simple periodic array exhibiting a non-linear relationship, indicative of lasing. We believe that the quasi-aperiodic approach studied here provides an alternate and promising strategy for shaping the emission pattern of nanoemitter systems.

Solar heating of GaAs nanowire solar cells.

Science.gov (United States)

Wu, Shao-Hua; Povinelli, Michelle L

2015-11-30

We use a coupled thermal-optical approach to model the operating temperature rise in GaAs nanowire solar cells. We find that despite more highly concentrated light absorption and lower thermal conductivity, the overall temperature rise in a nanowire structure is no higher than in a planar structure. Moreover, coating the nanowires with a transparent polymer can increase the radiative cooling power by 2.2 times, lowering the operating temperature by nearly 7 K.

Structural and magnetic characterization of as-prepared and annealed FeCoCu nanowire arrays in ordered anodic aluminum oxide templates

Energy Technology Data Exchange (ETDEWEB)

Rodríguez-González, B., E-mail: jbenito@uvigo.es [CACTI, University of Vigo, E-36310 Vigo (Spain); International Iberian Nanotechnology Laboratory, INL. Av. Mestre J. Veiga, 4715-330 Braga (Portugal); Bran, C.; Warnatz, T.; Vazquez, M. [Institute of Materials Science of Madrid, CSIC, 28049 Madrid (Spain); Rivas, J. [International Iberian Nanotechnology Laboratory, INL. Av. Mestre J. Veiga, 4715-330 Braga (Portugal)

2014-04-07

Herein, we report on the preparation, structure, and magnetic characterization of FeCoCu nanowire arrays grown by DC electrodeposition inside self-assembled ordered nanopores of anodic aluminum oxide templates. A systematic study of their structure has been performed both in as-prepared samples and after annealing in the temperature range up to 800 °C, although particular attention has been paid to annealing at 700 °C after which maximum magnetic hardening is achieved. The obtained nanowires have a diameter of 40 nm and their Fe{sub 0.28}Co{sub 0.67}Cu{sub 0.05} composition was confirmed by energy dispersive X-ray spectroscopy (EDS). Focused ion-beam lamellas of two samples (as-prepared and annealed at 700 °C) were prepared for their imaging in the high-resolution transmission electron microscopy (HRTEM) perpendicularly to the electron beam, where the obtained EDS compositional mappings show a homogeneous distribution of the elements. X-ray diffraction analysis, and selected area electron diffraction (SAED) patterns confirm that nanowires exhibit a bcc cubic structure (space group Im-3m). In addition, bright-dark field images show that the nanowires have a polycrystalline structure that remains essentially the same after annealing, but some modifications were observed: (i) an overall increase and sharpening of recrystallized grains, and (ii) an apparent shrinkage of the nanowires diameter. Obtained SAED patterns also show strong textured components with determined <111> and <112> crystalline directions parallel to the wires growth direction. The presence of both directions was also confirmed in the HRTEM images doing Fourier transform analyses. Magnetic measurements show strong magnetic anisotropy with magnetization easy axis parallel to the nanowires in as-prepared and annealed samples. The magnetic properties are tuned by suitable thermal treatments so that, maximum enhanced coercivity (∼2.7 kOe) and normalized remanence (∼0.91 Ms) values are

Structural and luminescence properties of GaN nanowires grown using cobalt phthalocyanine as catalyst

Science.gov (United States)

Yadav, Shivesh; Rodríguez-Fernández, Carlos; de Lima, Mauricio M.; Cantarero, Andres; Dhar, Subhabrata

2015-12-01

Catalyst free methods have usually been employed to avoid any catalyst induced contamination for the synthesis of GaN nanowires with better transport and optical properties. Here, we have used a catalytic route to grow GaN nanowires, which show good optical quality. Structural and luminescence properties of GaN nanowires grown by vapor-liquid-solid technique using cobalt phthalocyanine as catalyst are systematically investigated as a function of various growth parameters such as the growth temperature and III/V ratio. The study reveals that most of the nanowires, which are several tens of microns long, grow along [ 10 1 ¯ 0 ] direction. Interestingly, the average wire diameter has been found to decrease with the increase in III/V ratio. It has also been observed that in these samples, defect related broad luminescence features, which are often present in GaN, are completely suppressed. At all temperatures, photoluminescence spectrum is found to be dominated only by a band edge feature, which comprises of free and bound excitonic transitions. Our study furthermore reveals that the bound excitonic feature is associated with excitons trapped in certain deep level defects, which result from the deficiency of nitrogen during growth. This transition has a strong coupling with the localized vibrational modes of the defects.

Core-shell magnetic nanowires fabrication and characterization

Energy Technology Data Exchange (ETDEWEB)

Kalska-Szostko, B., E-mail: kalska@uwb.edu.pl [Institute of Chemistry, University of Bialystok, Ciolkowskiego 1K, 15-245 Bialystok (Poland); Faculty of Physics, University of Bialystok, Ciolkowskiego 1L, 15-245 Bialystok, Poland (Poland); Klekotka, U.; Satuła, D. [Institute of Chemistry, University of Bialystok, Ciolkowskiego 1K, 15-245 Bialystok (Poland); Faculty of Physics, University of Bialystok, Ciolkowskiego 1L, 15-245 Bialystok, Poland (Poland)

2017-02-28

Highlights: • New approach for nanowires modification are presented. • Physical and chemical characterization of the nanowires are shown. • Properties modulations as an effect of the surface layer composition are discussed. - Abstract: In this paper, a new way of the preparation of core-shell magnetic nanowires has been proposed. For the modification Fe nanowires were prepared by electrodeposition in anodic aluminium oxide matrixes, in first step. In second, by wetting chemical deposition, shell layers of Ag, Au or Cu were obtained. Resultant core-shell nanowires structure was characterized by X-ray diffraction, infrared spectroscopy, transmission electron microscopy, and energy dispersive x-ray. Whereas magnetic properties by Mössbauer spectroscopy.

Template-based fabrication of nanowire-nanotube hybrid arrays

International Nuclear Information System (INIS)

Ye Zuxin; Liu Haidong; Schultz, Isabel; Wu Wenhao; Naugle, D G; Lyuksyutov, I

2008-01-01

The fabrication and structure characterization of ordered nanowire-nanotube hybrid arrays embedded in porous anodic aluminum oxide (AAO) membranes are reported. Arrays of TiO 2 nanotubes were first deposited into the pores of AAO membranes by a sol-gel technique. Co nanowires were then electrochemically deposited into the TiO 2 nanotubes to form the nanowire-nanotube hybrid arrays. Scanning electron microscopy and transmission electron microscopy measurements showed a high nanowire filling factor and a clean interface between the Co nanowire and the TiO 2 nanotube. Application of these hybrids to the fabrication of ordered nanowire arrays with highly controllable geometric parameters is discussed

V-groove SnO2 nanowire sensors: fabrication and Pt-nanoparticle decoration

International Nuclear Information System (INIS)

Sun, Gun-Joo; Choi, Sun-Woo; Jung, Sung-Hyun; Katoch, Akash; Kim, Sang Sub

2013-01-01

Networked SnO 2 nanowire sensors were achieved using the selective growth of SnO 2 nanowires and their tangling ability, particularly on on-chip V-groove structures, in an effort to overcome the disadvantages imposed on the conventional trench-structured SnO 2 nanowire sensors. The sensing performance of the V-groove-structured SnO 2 nanowire sensors was highly dependent on the geometrical dimension of the groove, being superior to those of their conventional trench-structured counterparts. Pt nanoparticles were decorated on the surface of the networked SnO 2 nanowires via γ-ray radiolysis to enhance the sensing performances of the V-groove sensors whose V-groove widths had been optimized. The V-groove-structured Pt-nanoparticle-decorated SnO 2 nanowire sensors exhibited outstanding and reliable sensing capabilities towards toluene and nitrogen dioxide gases, indicating their potential for use as a platform for chemical gas sensors. (paper)

Bloch-Surface-Polariton-Based Hybrid Nanowire Structure for Subwavelength, Low-Loss Waveguiding

Directory of Open Access Journals (Sweden)

Weijing Kong

2018-03-01

Full Text Available Surface plasmon polaritons (SPPs have been thoroughly studied in the past decades for not only sensing but also waveguiding applications. Various plasmonic device structures have been explored due to their ability to confine their optical mode to the subwavelength level. However, with the existence of metal, the large ohmic loss limits the propagation distance of the SPP and thus the scalability of such devices. Therefore, different hybrid waveguides have been proposed to overcome this shortcoming. Through fine tuning of the coupling between the SPP and a conventional waveguide mode, a hybrid mode could be excited with decent mode confinement and extended propagation distance. As an effective alternative of SPP, Bloch surface waves have been re-investigated more recently for their unique advantages. As is supported in all-dielectric structures, the optical loss for the Bloch surface wave is much lower, which stands for a much longer propagating distance. Yet, the confinement of the Bloch surface wave due to the reflections and refractions in the multilayer structure is not as tight as that of the SPP. In this work, by integrating a periodic multilayer structure that supports the Bloch surface wave with a metallic nanowire structure, a hybrid Bloch surface wave polariton could be excited. With the proposed hybrid nanowire structure, a hybrid mode is demonstrated with the deep subwavelength mode confinement and a propagation distance of tens of microns.

Charging effects and surface potential variations of Cu-based nanowires

Energy Technology Data Exchange (ETDEWEB)

Nunes, D., E-mail: daniela.gomes@fct.unl.pt [i3N/CENIMAT, Department of Materials Science, Faculty of Science and Technology, Universidade NOVA de Lisboa, Campus de Caparica, 2829-516 Caparica (Portugal); Calmeiro, T.R.; Nandy, S.; Pinto, J.V.; Pimentel, A.; Barquinha, P. [i3N/CENIMAT, Department of Materials Science, Faculty of Science and Technology, Universidade NOVA de Lisboa, Campus de Caparica, 2829-516 Caparica (Portugal); Carvalho, P.A. [SINTEF Materials and Chemistry, PB 124 Blindern, NO-0314, Oslo (Norway); CeFEMA, Instituto Superior Técnico, Universidade de Lisboa, 1049-001, Lisboa (Portugal); Walmsley, J.C. [SINTEF Materials and Chemistry, Materials and Nanotechnology, Høgskoleringen 5, 7034 Trondheim (Norway); Fortunato, E., E-mail: emf@fct.unl.pt [i3N/CENIMAT, Department of Materials Science, Faculty of Science and Technology, Universidade NOVA de Lisboa, Campus de Caparica, 2829-516 Caparica (Portugal); Martins, R., E-mail: rm@uninova.pt [i3N/CENIMAT, Department of Materials Science, Faculty of Science and Technology, Universidade NOVA de Lisboa, Campus de Caparica, 2829-516 Caparica (Portugal)

2016-02-29

The present work reports charging effects and surface potential variations in pure copper, cuprous oxide and cupric oxide nanowires observed by electrostatic force microscopy (EFM) and Kelvin probe force microscopy (KPFM). The copper nanowires were produced by wet synthesis, oxidation into cuprous oxide nanowires was achieved through microwave irradiation and cupric oxide nanowires were obtained via furnace annealing in atmospheric conditions. Structural characterization of the nanowires was carried out by X-ray diffraction, scanning electron microscopy, transmission electron microscopy and energy dispersive X-ray spectroscopy. During the EFM experiments the electrostatic field of the positive probe charged negatively the Cu-based nanowires, which in turn polarized the SiO{sub 2} dielectric substrate. Both the probe/nanowire capacitance as well as the substrate polarization increased with the applied bias. Cu{sub 2}O and CuO nanowires behaved distinctively during the EFM measurements in accordance with their band gap energies. The work functions (WF) of the Cu-based nanowires, obtained by KPFM measurements, yielded WF{sub CuO} > WF{sub Cu} > WF{sub Cu{sub 2O}}. - Highlights: • Charge distribution study in Cu, Cu{sub 2}O and CuO nanowires through electrostatic force microscopy • Structural/surface defect role on the charge distribution along the Cu nanowires • Determination of the nanowire work functions by Kelvin probe force microscopy • Three types of nanowires give a broad idea of charge behavior on Cu based-nanowires.

Oxygen deficiency in MoO{sub 3} polycrystalline nanowires and nanotubes

Energy Technology Data Exchange (ETDEWEB)

Varlec, Ana, E-mail: ana.varlec@ijs.si [Condensed Matter Physics, Jožef Stefan Institute, Jamova 39, SI-1000 Ljubljana (Slovenia); Arčon, Denis [Condensed Matter Physics, Jožef Stefan Institute, Jamova 39, SI-1000 Ljubljana (Slovenia); Faculty of Mathematics and Physics, University of Ljubljana, Jadranska cesta 19, SI-1000 Ljubljana (Slovenia); Škapin, Srečo D. [Advanced Materials Department, Jožef Stefan Institute, Jamova 39, SI-1000 Ljubljana (Slovenia); Remškar, Maja [Condensed Matter Physics, Jožef Stefan Institute, Jamova 39, SI-1000 Ljubljana (Slovenia)

2016-02-15

We report on the synthesis of polycrystalline molybdenum oxide (MoO{sub 3}) nanowires via oxidation of molybdenum-sulfur-iodine (Mo{sub 6}S{sub 2}I{sub 8}) nanowires. This unique synthesis route results in an interesting morphology comprising porous nanowires and nanotubes. We found the nanowires to have the orthorhombic MoO{sub 3} structure. The structure is slightly oxygen deficient which results in the appearance of a new resonant Raman band (1004 cm{sup −1}) and paramagnetic defects (Mo{sup 5+}) of both the point and crystallographic shear plane nature. - Highlights: • Polycrystalline MoO{sub 3} nanowires were obtained via oxidation of Mo{sub 6}S{sub 2}I{sub 8} nanowires. • Nanowires are porous and tubular with either filled or empty interior. • Nanowires are slightly oxygen deficient which leads to a new Raman band.

Magnetic Behavior of Ni-Fe Core-Shell and Alloy Nanowires

Science.gov (United States)

Tripathy, Jagnyaseni; Vargas, Jose; Spinu, Leonard; Wiley, John

2013-03-01

Template assisted synthesis was used to fabricate a series of Ni-Fe core-shell and alloy nanowires. By controlling reaction conditions as well as pore structure, both systems could be targeted and magnetic properties followed as a function of architectures. In the core-shell structure coercivity increases with decrease in shell thickness while for the alloys, coercivity squareness improve with increase pore diameter. Details on the systematic studies of these materials will be presented in terms of hysteretic measurements, including first order reversal curves (FORC), and FMR data. Magnetic variation as a function of structure and nanowire aspect ratios will be presented and the origins of these behaviors discussed. Advanced Material Research Institute

Hierarchically Structured Co3O4@Pt@MnO2 Nanowire Arrays for High-Performance Supercapacitors

Science.gov (United States)

Xia, Hui; Zhu, Dongdong; Luo, Zhentao; Yu, Yue; Shi, Xiaoqin; Yuan, Guoliang; Xie, Jianping

2013-10-01

Here we proposed a novel architectural design of a ternary MnO2-based electrode - a hierarchical Co3O4@Pt@MnO2 core-shell-shell structure, where the complemental features of the three key components (a well-defined Co3O4 nanowire array on the conductive Ti substrate, an ultrathin layer of small Pt nanoparticles, and a thin layer of MnO2 nanoflakes) are strategically combined into a single entity to synergize and construct a high-performance electrode for supercapacitors. Owing to the high conductivity of the well-defined Co3O4 nanowire arrays, in which the conductivity was further enhanced by a thin metal (Pt) coating layer, in combination with the large surface area provided by the small MnO2 nanoflakes, the as-fabricated Co3O4@Pt@MnO2 nanowire arrays have exhibited high specific capacitances, good rate capability, and excellent cycling stability. The architectural design demonstrated in this study provides a new approach to fabricate high-performance MnO2-based nanowire arrays for constructing next-generation supercapacitors.

WPG-Controlled Quantum BDD Circuits with BDD Architecture on GaAs-Based Hexagonal Nanowire Network Structure

Directory of Open Access Journals (Sweden)

Hong-Quan ZHao

2012-01-01

Full Text Available One-dimensional nanowire quantum devices and basic quantum logic AND and OR unit on hexagonal nanowire units controlled by wrap gate (WPG were designed and fabricated on GaAs-based one-dimensional electron gas (1-DEG regular nanowire network with hexagonal topology. These basic quantum logic units worked correctly at 35 K, and clear quantum conductance was achieved on the node device, logic AND circuit unit, and logic OR circuit unit. Binary-decision-diagram- (BDD- based arithmetic logic unit (ALU is realized on GaAs-based regular nanowire network with hexagonal topology by the same fabrication method as that of the quantum devices and basic circuits. This BDD-based ALU circuit worked correctly at room temperature. Since these quantum devices and circuits are basic units of the BDD ALU combinational circuit, the possibility of integrating these quantum devices and basic quantum circuits into the BDD-based quantum circuit with more complicated structures was discussed. We are prospecting the realization of quantum BDD combinational circuitries with very small of energy consumption and very high density of integration.

High-resolution TEM characterization of ZnO core-shell nanowires for dye-sensitized solar cells

Energy Technology Data Exchange (ETDEWEB)

Divitini, G; Ducati, C [Department of Materials Science, Pembroke Street, Cambridge, CB2 3QZ (United Kingdom); Plank, N O V; Welland, M E [Nanoscience Centre, Department of Engineering, University of Cambridge, CB3 0FF (United Kingdom); Snaith, H J, E-mail: gd322@cam.ac.u [Clarendon Laboratory, Department of Physics, University of Oxford, OX1 3PU (United Kingdom)

2010-07-01

Recently ZnO nanowire films have been used in very promising and inexpensive dye-sensitized solar cells (DSSC). It was found that the performance of the devices can be enhanced by functionalising the nanowires with a thin metal oxide coating. This nm-scale shell is believed to tailor the electronic structure of the nanowire, and help the absorption of the dye. Core-shell ZnO nanowire structures are synthesised at low temperature (below 120{sup 0}C) by consecutive hydrothermal growth steps. Different materials are investigated for the coating, including Mg, Al, Cs and Zr oxides. High resolution TEM is used to characterise the quality of both the nanowire core and the shell, and to monitor the thickness and the degree of crystallisation of the oxide coating. The interface between the nanowire core and the outer shell is investigated in order to understand the adhesion of the coating, and give valuable feedback for the synthesis process. Nanowire films are packaged into dye-sensitised solar cell prototypes; samples coated with ZrO{sub 2} and MgO show the largest enhancement in the photocurrent and open-circuit voltage and look very promising for further improvement.

Tuning wettability of hydrogen titanate nanowire mesh by Na+ irradiation

Science.gov (United States)

Das, Pritam; Chatterjee, Shyamal

2018-04-01

Hydrogen titanate (HT) nanowires have been widely studied for remarkable properties and various potential applications. However, a handful studies are available related to ion beam induced structural changes and influence on wetting behavior of the HT nanowire surface. In this work, we exposed HT nanowires to 5 keV Na+ at an ion fluence of 1×1016 ions.cm-2. Scanning electron microscope shows that at this ion fluence nanowires are bent arbitrarily and they are welded to each other forming an interlinked network structure. Computer simulation shows that ion beam induces defect formation in the nanowires, which plays major role in such structural modifications. An interesting alteration of surface wetting property is observed due to ion irradiation. The hydrophilic pristine surface turns into hydrophobic after ion irradiation.

Imaging, structural, and chemical analysis of silicon nanowires

International Nuclear Information System (INIS)

Barsotti, R.J. Jr.; Fischer, J.E.; Lee, C.H.; Mahmood, J.; Adu, C.K.W.; Eklund, P.C.

2002-01-01

Laser ablation has been used to grow silicon nanowires with an average silicon crystal core diameter of 6.7 nm±2.9 nm surrounded by an amorphous SiO x sheath of 1-2 nm, the smallest silicon wires reported in the literature. Imaging, chemical, and structural analysis of these wires are reported. Due to the growth temperature and the presence of calcium impurities and trace oxygen, two distinct types of wires are found. They appear to grow by two different processes. One requires a metal catalyst, the other is catalyzed by oxygen. Suggestions for controlled synthesis based on these growth mechanisms are made

Design and Characterisation of III-V Semiconductor Nanowire Lasers

Science.gov (United States)

Saxena, Dhruv

The development of small, power-efficient lasers underpins many of the technologies that we utilise today. Semiconductor nanowires are promising for miniaturising lasers to even smaller dimensions. III-V semiconductors, such as Gallium Arsenide (GaAs) and Indium Phosphide (InP), are the most widely used materials for optoelectronic devices and so the development of nanowire lasers based on these materials is expected to have technologically significant outcomes. This PhD dissertation presents a comprehensive study of the design of III-V semiconductor nanowire lasers, with bulk and quantum confined active regions. Based on the design, various III-V semiconductor nanowire lasers are demonstrated, namely, GaAs nanowire lasers, GaAs/AlGaAs multi-quantum well (MQW) nanowire lasers and InP nanowire lasers. These nanowire lasers are shown to operate at room temperature, have low thresholds, and lase from different transverse modes. The structural and optoelectronic quality of nanowire lasers are characterised via electron microscopy and photoluminescence spectroscopic techniques. Lasing is characterised in all these devices by optical pumping. The lasing characteristics are analysed by rate equation modelling and the lasing mode(s) in these devices is characterised by threshold gain modelling, polarisation measurements and Fourier plane imaging. Firstly, GaAs nanowire lasers that operate at room temperature are demonstrated. This is achieved by determining the optimal nanowire diameter to reduce threshold gain and by passivating nanowires to improve their quantum efficiency (QE). High-quality surface passivated GaAs nanowires of suitable diameters are grown. The growth procedure is tailored to improve both QE and structural uniformity of nanowires. Room-temperature lasing is demonstrated from individual nanowires and lasing is characterised to be from TM01 mode by threshold gain modelling. To lower threshold even further, nanowire lasers with GaAs/AlGaAs coaxial multi

Thermal-treatment effect on the photoluminescence and gas-sensing properties of tungsten oxide nanowires

International Nuclear Information System (INIS)

Sun, Shibin; Chang, Xueting; Li, Zhenjiang

2010-01-01

Single-crystalline non-stoichiometric tungsten oxide nanowires were initially prepared using a simple solvothermal method. High resolution transmission electron microscopy (HRTEM) investigations indicate that the tungsten oxide nanowires exhibit various crystal defects, including stacking faults, dislocations, and vacancies. A possible defect-induced mechanism was proposed to account for the temperature-dependent morphological evolution of the tungsten oxide nanowires under thermal processing. Due to the high specific surface areas and non-stoichiometric crystal structure, the original tungsten oxide nanowires were highly sensitive to ppm level ethanol at room temperature. Thermal treatment under dry air condition was found to deteriorate the selectivity of room-temperature tungsten oxide sensors, and 400 o C may be considered as the top temperature limit in sensor applications for the solvothermally-prepared nanowires. The photoluminescence (PL) characteristics of tungsten oxide nanowires were also strongly influenced by thermal treatment.

Thermal-treatment effect on the photoluminescence and gas-sensing properties of tungsten oxide nanowires

Energy Technology Data Exchange (ETDEWEB)

Sun, Shibin [College of Electromechanical Engineering, Qingdao University of Science and Technology, Qingdao 266061, Shandong (China); Chang, Xueting [Institute of Materials Science and Engineering, Ocean University of China, Qingdao 266100, Shandong (China); Li, Zhenjiang, E-mail: zjli126@126.com [College of Electromechanical Engineering, Qingdao University of Science and Technology, Qingdao 266061, Shandong (China)

2010-09-15

Single-crystalline non-stoichiometric tungsten oxide nanowires were initially prepared using a simple solvothermal method. High resolution transmission electron microscopy (HRTEM) investigations indicate that the tungsten oxide nanowires exhibit various crystal defects, including stacking faults, dislocations, and vacancies. A possible defect-induced mechanism was proposed to account for the temperature-dependent morphological evolution of the tungsten oxide nanowires under thermal processing. Due to the high specific surface areas and non-stoichiometric crystal structure, the original tungsten oxide nanowires were highly sensitive to ppm level ethanol at room temperature. Thermal treatment under dry air condition was found to deteriorate the selectivity of room-temperature tungsten oxide sensors, and 400 {sup o}C may be considered as the top temperature limit in sensor applications for the solvothermally-prepared nanowires. The photoluminescence (PL) characteristics of tungsten oxide nanowires were also strongly influenced by thermal treatment.

Semiconducting silicon nanowires for biomedical applications

CERN Document Server

Coffer, JL

2014-01-01

Biomedical applications have benefited greatly from the increasing interest and research into semiconducting silicon nanowires. Semiconducting Silicon Nanowires for Biomedical Applications reviews the fabrication, properties, and applications of this emerging material. The book begins by reviewing the basics, as well as the growth, characterization, biocompatibility, and surface modification, of semiconducting silicon nanowires. It goes on to focus on silicon nanowires for tissue engineering and delivery applications, including cellular binding and internalization, orthopedic tissue scaffol

Ballistic superconductivity in semiconductor nanowires

Science.gov (United States)

Zhang, Hao; Gül, Önder; Conesa-Boj, Sonia; Nowak, Michał P.; Wimmer, Michael; Zuo, Kun; Mourik, Vincent; de Vries, Folkert K.; van Veen, Jasper; de Moor, Michiel W. A.; Bommer, Jouri D. S.; van Woerkom, David J.; Car, Diana; Plissard, Sébastien R; Bakkers, Erik P.A.M.; Quintero-Pérez, Marina; Cassidy, Maja C.; Koelling, Sebastian; Goswami, Srijit; Watanabe, Kenji; Taniguchi, Takashi; Kouwenhoven, Leo P.

2017-01-01

Semiconductor nanowires have opened new research avenues in quantum transport owing to their confined geometry and electrostatic tunability. They have offered an exceptional testbed for superconductivity, leading to the realization of hybrid systems combining the macroscopic quantum properties of superconductors with the possibility to control charges down to a single electron. These advances brought semiconductor nanowires to the forefront of efforts to realize topological superconductivity and Majorana modes. A prime challenge to benefit from the topological properties of Majoranas is to reduce the disorder in hybrid nanowire devices. Here we show ballistic superconductivity in InSb semiconductor nanowires. Our structural and chemical analyses demonstrate a high-quality interface between the nanowire and a NbTiN superconductor that enables ballistic transport. This is manifested by a quantized conductance for normal carriers, a strongly enhanced conductance for Andreev-reflecting carriers, and an induced hard gap with a significantly reduced density of states. These results pave the way for disorder-free Majorana devices. PMID:28681843

Optical Fiber/Nanowire Hybrid Structures for Efficient Three-Dimensional Dye-Sensitized Solar Cells

KAUST Repository

Weintraub, Benjamin

2009-11-09

Wired up: The energy conversion efficiency of three-dimensional dye-sensitized solar cells (DSSCs) in a hybrid structure that integrates optical fibers and nanowire arrays is greater than that of a two-dimensional device. Internal axial illumination enhances the energy conversion efficiency of a rectangular fiber-based hybrid structure (see picture) by a factor of up to six compared to light illumination normal to the fiber axis from outside the device.

Growth and Raman spectroscopy studies of gold-free catalyzed semiconductor nanowires

Energy Technology Data Exchange (ETDEWEB)

Zardo, Ilaria

2010-12-15

The present Ph.D. thesis proposes two aims: the search for catalysts alternative to gold for the growth of silicon nanowires and the investigation of the structural properties of the gold-free catalyzed Si, Ge, and GaAs nanowires. The successful growth of gold free catalyzed silicon nanowires was obtained using Ga and In as catalyst. Hydrogen plasma conditions were needed during the growth process. We proposed a growth mechanism where the role of the hydrogen plasma is taken into account. The influence of the growth conditions on nanowire growth morphology and structural properties was investigated in detail. The TEM studies showed the occurrence of different kind of twin defects depending on the nanowire growth direction. The intersection of twins in different spatial directions in <111>-oriented nanowires or the periodicity of highly dense twins in <112>-oriented nanowires leads to the formation of hexagonal domains embedded in the diamond silicon structure. A simple crystallographic model which illustrates the formation of the hexagonal phase was proposed. The presence of the hexagonal domains embedded in the diamond silicon structure was investigated also by means of Raman spectroscopy. The measured frequencies of the E2g and A1g modes were found to be in agreement with frequencies expected from phonon dispersion folding. An estimation of the percentage of hexagonal structure with respect to the cubic structure was given. The relative percentage of the two structures was found to change with growth temperature. Spatially resolved Raman scattering experiments were also realized on single Si nanowires. The lattice dynamics of gold-free catalyzed Ge and GaAs nanowires was studied by means of Raman spectroscopy. We performed spatially resolved Raman spectroscopy experiments on single crystalline- amorphous core-shell Ge nanowires. The correlation with TEM studies on nanowires grown under the same conditions and with AFM measurements realized of the same nanowires

Influence of substrate orientation on the structural properties of GaAs nanowires in MOCVD

Energy Technology Data Exchange (ETDEWEB)

Muhammad, R., E-mail: rosnita@utm.my; Othaman, Z., E-mail: zulothaman@gmail.com; Ibrahim, Z., E-mail: zuhairi@utm.my; Sakrani, S., E-mail: samsudi3@yahoo.com [Faculty of Science, UniversitiTeknologi Malaysia, 81310 UTM, Johor (Malaysia); Wahab, Y., E-mail: wyussof@gmail.com [Razak School, UniversitiTeknologi Malaysia, 54100 Kuala Lumpur (Malaysia)

2016-04-19

In this study, the effect of substrate orientation on the structural properties of GaAs nanowires grown by a metal organic chemical vapor deposition has been investigated. Gold colloids were used as catalyst to initiate the growth of nanowiresby the vapour-liquid-solid (VLS) mechanism. From the field-emission scanning electron microscopy (FE-SEM), the growth of the nanowires were at an elevation angle of 90°, 60°, 65° and 35° with respect to the GaAs substrate for (111)B, (311)B, (110) and (100) orientations respectively. The preferential NW growth direction is always <111>B. High-resolution transmission electron microscope (HRTEM) micrograph showed the NWs that grew on the GaAs(111)B has more structural defects when compared to others. Energy dispersive X-ray analysis (EDX) indicated the presence of Au, Ga and As. The bigger diameter NWs dominates the (111)B substrate surface.

Shewanella oneidensis MR-1 nanowires are outer membrane and periplasmic extensions of the extracellular electron transport components.

Science.gov (United States)

Pirbadian, Sahand; Barchinger, Sarah E; Leung, Kar Man; Byun, Hye Suk; Jangir, Yamini; Bouhenni, Rachida A; Reed, Samantha B; Romine, Margaret F; Saffarini, Daad A; Shi, Liang; Gorby, Yuri A; Golbeck, John H; El-Naggar, Mohamed Y

2014-09-02

Bacterial nanowires offer an extracellular electron transport (EET) pathway for linking the respiratory chain of bacteria to external surfaces, including oxidized metals in the environment and engineered electrodes in renewable energy devices. Despite the global, environmental, and technological consequences of this biotic-abiotic interaction, the composition, physiological relevance, and electron transport mechanisms of bacterial nanowires remain unclear. We report, to our knowledge, the first in vivo observations of the formation and respiratory impact of nanowires in the model metal-reducing microbe Shewanella oneidensis MR-1. Live fluorescence measurements, immunolabeling, and quantitative gene expression analysis point to S. oneidensis MR-1 nanowires as extensions of the outer membrane and periplasm that include the multiheme cytochromes responsible for EET, rather than pilin-based structures as previously thought. These membrane extensions are associated with outer membrane vesicles, structures ubiquitous in Gram-negative bacteria, and are consistent with bacterial nanowires that mediate long-range EET by the previously proposed multistep redox hopping mechanism. Redox-functionalized membrane and vesicular extensions may represent a general microbial strategy for electron transport and energy distribution.

X-ray diffraction analysis of InAs nanowires

International Nuclear Information System (INIS)

Davydok, Anton

2013-01-01

Semiconductor nanowires have attracted great interest as building blocks for future electronic and optoelectronic devices. The variability of the growth process opens the opportunity to control and combine the various properties tailoring for specific application. It was shown that the electrical and optical characteristics of the nanowires are strongly connected with their structure. Despite intensive research in this field, the growth process is still not fully understood. In particular, extensive real structure investigations are required. Most of the reports dedicated on the structural researches are based on the results of scanning electron microscopy (SEM) or transmission electron microscopy (TEM). SEM provides an image of the surface with nanostructures and is mainly used to describe the morphology of the sample, but it does not bring information about the internal structure, phase composition and defect structure. At the same time, the internal structure can be examined by TEM down to atomic scale. TEM image of good quality are very expensive due to the efforts in sample preparation and in localisation of a single object. All these aspects make the statistical structural analysis difficult. In the present work, X-ray diffraction analysis has been applied for structural investigation of InAs nanowires grown by different techniques. Using various X-ray diffraction geometries, the nanowire systems were investigated in terms of the lattice parameters, phase composition, strains and displacement fields and stacking defects. In particular, realizing grazing incidence diffraction and controlling the penetration depth of X-ray beam, we characterized sample series grown by Au-assisted metal organic phase epitaxy on GaAs [111]B substrate with different growth time. According to the results of SEM and X-ray investigations, a model of the growth process has been proposed. A more detailed analysis was performed on InAs nanowires grown by molecular beam epitaxy (MBE) on

Methods for synthesizing metal oxide nanowires

Science.gov (United States)

Sunkara, Mahendra Kumar; Kumar, Vivekanand; Kim, Jeong H.; Clark, Ezra Lee

2016-08-09

A method of synthesizing a metal oxide nanowire includes the steps of: combining an amount of a transition metal or a transition metal oxide with an amount of an alkali metal compound to produce a mixture; activating a plasma discharge reactor to create a plasma discharge; exposing the mixture to the plasma discharge for a first predetermined time period such that transition metal oxide nanowires are formed; contacting the transition metal oxide nanowires with an acid solution such that an alkali metal ion is exchanged for a hydrogen ion on each of the transition metal oxide nanowires; and exposing the transition metal oxide nanowires to the plasma discharge for a second predetermined time period to thermally anneal the transition metal oxide nanowires. Transition metal oxide nanowires produced using the synthesis methods described herein are also provided.

Electronic structure and intersubband magnetoabsorption spectra of CdSe/CdS core-shell nanowires

Science.gov (United States)

Xiong, Wen

2016-10-01

The electronic structures of CdSe/CdS core-shell nanowires are calculated based on the effective-mass theory, and it is found that the hole states in CdSe/CdS core-shell nanowires are strongly mixed, which are very different from the hole states in CdSe or CdS nanowires. In addition, we find the three highest hole states at the Γ point are almost localized in the CdSe core and the energies of the hole states in CdSe/CdS core-shell nanowires can be enhanced greatly when the core radius Rc increases and the total radius R is fixed. The degenerate hole states are split by the magnetic field, and the split energies will increase when |Jh | increases from 1/2 to 7/2, while they are almost not influenced by the change of the core radius Rc. The absorption spectra of CdSe/CdS core-shell nanowires at the Γ point are also studied in the magnetic field when the temperature T is considered, and we find there are only two peaks will arise if the core radius Rc and the temperature T increase. The intensity of each optical absorption can be considerably enhanced by increasing the core radius Rc when the temperature T is fixed, it is due to the increase of their optical transition matrix element. Meanwhile, the intensity of each optical absorption can be decreased when the temperature T increases and the core radius Rc is fixed, and this is because the Fermi-Dirac distribution function of the corresponding hole states will increase as the increase of the temperature T.

Synthesis of the cactus-like silicon nanowires/tungsten oxide nanowires composite for room-temperature NO{sub 2} gas sensor

Energy Technology Data Exchange (ETDEWEB)

Zhang, Weiyi, E-mail: zhangweiyi@tju.edu.cn [School of Electronic Information Engineering, Tianjin University, Tianjin, 300072 (China); Hu, Ming [School of Electronic Information Engineering, Tianjin University, Tianjin, 300072 (China); Key Laboratory for Advanced Ceramics and Machining Technology, Ministry of Education, School of Materials Science and Engineering, Tianjin University, Tianjin 300072 (China); Liu, Xing; Wei, Yulong; Li, Na [School of Electronic Information Engineering, Tianjin University, Tianjin, 300072 (China); Qin, Yuxiang, E-mail: qinyuxiang@tju.edu.cn [School of Electronic Information Engineering, Tianjin University, Tianjin, 300072 (China); Key Laboratory for Advanced Ceramics and Machining Technology, Ministry of Education, School of Materials Science and Engineering, Tianjin University, Tianjin 300072 (China)

2016-09-15

In the present work, the tungsten oxide (WO{sub 3}) nanowires functionalized silicon nanowires (SiNWs) with cactus-like structure has been successfully synthesized for room-temperature NO{sub 2} detection. The novel nanocomposite was fabricated by metal-assisted chemical etching (MACE) and thermal annealing of tungsten film. The WO{sub 3} nanowires were evenly distributed from the upper to the lower part of the SiNWs, indicating excellent uniformity which is conducive to adsorption and desorption of gas molecules. The gas-sensing properties have been examined by measuring the resistance change towards 0.25–5 ppm NO{sub 2} gas. At room temperature, which is the optimum working temperature, the SiNWs/WO{sub 3} nanowires composite showed two-times higher NO{sub 2} response than that of the bare SiNWs at 2 ppm NO{sub 2}. On the contrary, the responses of composite sensors to high concentrations of other reducing gases were very low, indicating excellent selectivity. Simultaneously, the composite sensors exhibited good sensing repeatability and stability. The enhancement in gas sensing properties may be attributed to the change in width of the space charge region, which is similar to the behavior of p-n junctions under forward bias, in the high-density p-n heterojunction structure formed between SiNWs and WO{sub 3} nanowires. - Highlights: • SiNWs/WO{sub 3} nanowires composite with cactus-like structure is synthesized. • The morphology of WO{sub 3} nanowires depends on the thermal annealing temperature. • The nanocomposite sensor exhibit better gas response than that of bare SiNWs. • The gas sensing mechanism is discussed using p-n heterojunction theory.

Spatially resolved investigation of competing nanocluster emission in quantum-disks-in-nanowires structure characterized by nanoscale cathodoluminescence

KAUST Repository

Prabaswara, Aditya; Stowe, David J.; Janjua, Bilal; Ng, Tien Khee; Anjum, Dalaver H.; Longo, Paolo; Zhao, Chao; Elafandy, Rami T.; Li, Xiaohang; Alyamani, Ahmed Y.; El-Desouki, Munir M.; Ooi, Boon S.

2017-01-01

We report on the study and characterization of nanoclusters-related recombination centers within quantum-disks-in-nanowires heterostructure by utilizing microphotoluminescence (mu-PL) and cathodoluminescence scanning transmission electron microscopy (CL-STEM). mu-PL measurement shows that the nanoclusters-related recombination center exhibits different temperature-dependent characteristics compared with the surrounding InGaN quantum-disksrelated recombination center. CL-STEM measurements reveal that these recombination centers mainly arise from irregularities within the quantum disks, with a strong, spatially localized emission when measured at low temperature. The spectra obtained from both CL-STEM and mu-PL correlate well with each other. Our work sheds light on the optical and structural properties of simultaneously coexisting recombination centers within nanowires heterostructures. (C) The Authors. Published by SPIE under a Creative Commons Attribution 3.0 Unported License. Distribution or reproduction of this work in whole or in part requires full attribution of the original publication, including its DOI.

Spatially resolved investigation of competing nanocluster emission in quantum-disks-in-nanowires structure characterized by nanoscale cathodoluminescence

KAUST Repository

Prabaswara, Aditya

2017-06-30

We report on the study and characterization of nanoclusters-related recombination centers within quantum-disks-in-nanowires heterostructure by utilizing microphotoluminescence (mu-PL) and cathodoluminescence scanning transmission electron microscopy (CL-STEM). mu-PL measurement shows that the nanoclusters-related recombination center exhibits different temperature-dependent characteristics compared with the surrounding InGaN quantum-disksrelated recombination center. CL-STEM measurements reveal that these recombination centers mainly arise from irregularities within the quantum disks, with a strong, spatially localized emission when measured at low temperature. The spectra obtained from both CL-STEM and mu-PL correlate well with each other. Our work sheds light on the optical and structural properties of simultaneously coexisting recombination centers within nanowires heterostructures. (C) The Authors. Published by SPIE under a Creative Commons Attribution 3.0 Unported License. Distribution or reproduction of this work in whole or in part requires full attribution of the original publication, including its DOI.

In situ electron backscattered diffraction of individual GaAs nanowires

Energy Technology Data Exchange (ETDEWEB)

Prikhodko, S.V. [Department of Materials Science and Engineering, University of California Los Angeles, Los Angeles, CA 90095 (United States)], E-mail: sergey@seas.ucla.edu; Sitzman, S. [Oxford Instruments America, Concord, MA 01742 (United States); Gambin, V. [Northrop Grumman Space Technology, Redondo Beach, CA 90278 (United States); Kodambaka, S. [Department of Materials Science and Engineering, University of California Los Angeles, Los Angeles, CA 90095 (United States)

2008-12-15

We suggest and demonstrate that electron backscattered diffraction, a scanning electron microscope-based technique, can be used for non-destructive structural and morphological characterization of statistically significant number of nanowires in situ on their growth substrate. We obtain morphological, crystal phase, and crystal orientation information of individual GaAs nanowires in situ on the growth substrate GaAs(1 1 1) B. Our results, verified using transmission electron microscopy and selected area electron diffraction analyses of the same set of wires, indicate that most wires possess a wurtzite structure with a high density of thin structural defects aligned normal to the wire growth axis, while others grow defect-free with a zincblende structure. The demonstrated approach is general, applicable to other material systems, and is expected to provide important insights into the role of substrate structure on nanowire structure on nanowire crystallinity and growth orientation.

Structural evolution of self-assisted GaAs nanowires grown on Si(111)

Energy Technology Data Exchange (ETDEWEB)

Biermanns, Andreas; Davydok, Anton; Pietsch, Ullrich [University of Siegen, Solid State Physics Group, Walter-Flex-Str. 3, 57072 Siegen (Germany); Breuer, Steffen; Geelhaar, Lutz [Paul-Drude-Institut fuer Festkoerperelektronik, Hausvogteiplatz 5-7, 10117 Berlin (Germany)

2011-04-15

GaAs nanowires are grown on Si(111) by self-assisted molecular beam epitaxy, and the ratio between wurtzite and zinc-blende phases is determined as function of nanowire length using asymmetric X-ray diffraction. We show that under the applied growth conditions, nanowires grow in both phases during the initial stage of growth, whereas the zinc-blende content increases with growth time and dominates in long nanowires. Compared to the zinc-blende units, the vertical lattice parameter of the wurtzite segments is 0.7% larger, as measured by the positions of respective diffraction peaks. (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Synthesis and structural property of Si nanosheets connected to Si nanowires using MnCl{sub 2}/Si powder source

Energy Technology Data Exchange (ETDEWEB)

Meng, Erchao [Graduate School of Science and Technology, Shizuoka University, 3-5-1 Johuku, Naka-ku, Hamamatsu, Shizuoka 432-8561 (Japan); Ueki, Akiko [Toyota Central R& D Labs., Inc., 41-1 Yokomichi, Nagakute, Aichi 480-1192 (Japan); Meng, Xiang [Graduate School of Science and Technology, Shizuoka University, 3-5-1 Johuku, Naka-ku, Hamamatsu, Shizuoka 432-8561 (Japan); Suzuki, Hiroaki [Graduate School of Engineering, Shizuoka University, 3-5-1 Johuku, Naka-ku, Hamamatsu, Shizuoka 432-8561 (Japan); Itahara, Hiroshi [Toyota Central R& D Labs., Inc., 41-1 Yokomichi, Nagakute, Aichi 480-1192 (Japan); Tatsuoka, Hirokazu, E-mail: tatsuoka.hirokazu@shizuoka.ac.jp [Graduate School of Integrated Science and Technology, Shizuoka University, 3-5-1 Johuku, Naka-ku, Hamamatsu, Shizuoka 432-8561 (Japan)

2016-08-15

Graphical abstract: Si nanosheets connected to Si nanowires synthesized using a MnCl{sub 2}/Si powder source with an Au catalyst avoid the use of air-sensitive SiH{sub 4} or SiCl{sub 4}. It was evident from these structural features of the nanosheets (leaf blade) with nanowires (petiole) that the nanosheets were formed by the twin-plane reentrant-edge mechanism. The feature of the observed lattice fringes of the Si(111) nanosheets was clearly explained by the interference with the extra diffraction spots that arose due to the reciprocal lattice streaking effect. - Highlights: • New Si nanosheets connected to Si nanowires were synthesized using MnCl{sub 2}/Si powders. • The synthesis method has benefits in terms of avoiding air sensitive SiH{sub 4} or SiCl{sub 4}. • Structural property and electron diffraction of the Si nanosheets were clarified. • Odd lattice fringes of the Si nanosheets observed by HRTEM were clearly explained. - Abstract: Si nanosheets connected to Si nanowires were synthesized using a MnCl{sub 2}/Si powder source with an Au catalyst. The synthesis method has benefits in terms of avoiding conventionally used air-sensitive SiH{sub 4} or SiCl{sub 4}. The existence of the Si nanosheets connected to the Si<111> nanowires, like sprouts or leaves with petioles, was observed, and the surface of the nanosheets was Si{111}. The nanosheets were grown in the growth direction of <211> perpendicular to that of the Si nanowires. It was evident from these structural features of the nanosheets that the nanosheets were formed by the twin-plane reentrant-edge mechanism. The feature of the observed lattice fringes, which do not appear for Si bulk crystals, of the Si(111) nanosheets obtained by high resolution transmission electron microscopy was clearly explained due to the extra diffraction spots that arose by the reciprocal lattice streaking effect.

Optical Properties of Rotationally Twinned Nanowire Superlattices

DEFF Research Database (Denmark)

Bao, Jiming; Bell, David C.; Capasso, Federico

2008-01-01

We have developed a technique so that both transmission electron microscopy and microphotoluminescence can be performed on the same semiconductor nanowire over a large range of optical power, thus allowing us to directly correlate structural and optical properties of rotationally twinned zinc...... a heterostructure in a chemically homogeneous nanowire material and alter in a major way its optical properties opens new possibilities for band-structure engineering....

Substrate and Mg doping effects in GaAs nanowires

Directory of Open Access Journals (Sweden)

Perumal Kannappan

2017-10-01

Full Text Available Mg doping of GaAs nanowires has been established as a viable alternative to Be doping in order to achieve p-type electrical conductivity. Although reports on the optical properties are available, few reports exist about the physical properties of intermediate-to-high Mg doping in GaAs nanowires grown by molecular beam epitaxy (MBE on GaAs(111B and Si(111 substrates. In this work, we address this topic and present further understanding on the fundamental aspects. As the Mg doping was increased, structural and optical investigations revealed: i a lower influence of the polytypic nature of the GaAs nanowires on their electronic structure; ii a considerable reduction of the density of vertical nanowires, which is almost null for growth on Si(111; iii the occurrence of a higher WZ phase fraction, in particular for growth on Si(111; iv an increase of the activation energy to release the less bound carrier in the radiative state from nanowires grown on GaAs(111B; and v a higher influence of defects on the activation of nonradiative de-excitation channels in the case of nanowires only grown on Si(111. Back-gate field effect transistors were fabricated with individual nanowires and the p-type electrical conductivity was measured with free hole concentration ranging from 2.7 × 1016 cm−3 to 1.4 × 1017 cm−3. The estimated electrical mobility was in the range ≈0.3–39 cm2/Vs and the dominant scattering mechanism is ascribed to the WZ/ZB interfaces. Electrical and optical measurements showed a lower influence of the polytypic structure of the nanowires on their electronic structure. The involvement of Mg in one of the radiative transitions observed for growth on the Si(111 substrate is suggested.

Characterization of III-V nanowires for photovoltaic devices using advanced electron microscopy techniques

DEFF Research Database (Denmark)

Persson, Johan Mikael

In this work, the crystal structure of epitaxially grown semiconductor nanowires has been analysed using electron microscopy and to some extent X-ray diffractometry. The goal of the EU project which this work was a part of was to build multi-junction solar cells with nanowires as the main building...... of the crystal structure at the junction. This thesis also comments on some unusual properties and _ndings of the examined nanowires: Some nanowires sported a droplet-like protrusion of the catalyst gold particle reaching into the solid center of the nanowire. This feature can be discussed in terms of nanowire...

Synthesis and Characterization of CdS/CdSxSe1-x Nanowires

Science.gov (United States)

Agueda Lopez, Kleyser; Wu, Marvin

Semiconductor nanowire heterostructures are of interest for potential applications in solar cells and other advanced optoelectronic devices. We report here on synthesis of CdS/CdSxSe1-x nanowires (NWs) using a dual source vapor = liquid - solid technique, and characterization of these NWs with scanning electron microscopy and optical microscopy. We determine the effect of growth parameters, including source / substrate temperatures and time of exposure, on NW size, shape, and composition. The crystal structure and optical properties individual NWs from selected substrates has been mapped using transmission Kikuchi diffraction and photoluminescence (PL) microscopy. NWs consistently exhibit a hexagonal structure, with growth along the c-axis. Strong PL peaks are observed between the expected bandgap emission from CdS and CdSe, confirming formation of CdSxSe1-x. PL peaks vary significantly with intensity along the long axis of the nanowire, suggesting that the NW surface is not uniformly passivated. These nanowires show promise for future investigation and manipulation of energy band gaps contain in CdS/CdSe. CREST.

Facile synthesis of porous Pt botryoidal nanowires and their electrochemical properties

International Nuclear Information System (INIS)

Huang, Zhongyuan; Zhou, Haihui; Chen, Zhongxue; Zeng, Fanyan; Chen, Liang; Luo, Wucheng; Kuang, Yafei

2014-01-01

Highlights: • Porous Pt nanowires were synthesized by combination of soft and hard templets. • Te nanowires were used as the hard templet and reductant. • The Pt nanowires are composed of many small Pt nanoparticles and pores. • The Pt nanowires have very good electrochemical activity and stability. - Abstract: Long and porous Pt botryoidal nanowires (Pt BNWs) were facilely synthesized by combination of soft and hard templates accompanying chemical reduction of ascorbic acid and replacement of Te nanowires. This bis-template and bis-reductant method is proved to be an effective way to prepare nanowires with special structure. The scanning electron microscopy and transmission electron microscopy images show the as-prepared product is botryoidal nanowires with diameter of 20–30 nm and length of several micrometers. High resolution transmission electron microscopy shows the Pt botryoidal nanowires are composed of many small Pt nanoparticles (about 3 nm in diameter), which is just like that many grapes grow on the branch. These small nanoparticles make Pt nanowires have botryoidal and porous structure. Moreover, the diameter of Pt BNWs can be adjusted by changing the dosage of Pt precursor, polyvinylpyrrolidone and L-ascorbic acid. The electrocatalytic performance of Pt botryoidal nanowires is studied, which shows that the as-prepared Pt botryoidal nanowires have not only high activity but also good stability for oxygen reduction reaction

Fabrication of amorphous silica nanowires via oxygen plasma treatment of polymers on silicon

Science.gov (United States)

Chen, Zhuojie; She, Didi; Chen, Qinghua; Li, Yanmei; Wu, Wengang

2018-02-01

We demonstrate a facile non-catalytic method of fabricating silica nanowires at room temperature. Different polymers including photoresists, parylene C and polystyrene are patterned into pedestals on the silicon substrates. The silica nanowires are obtained via the oxygen plasma treatment on those pedestals. Compared to traditional strategies of silica nanowire fabrication, this method is much simpler and low-cost. Through designing the proper initial patterns and plasma process parameters, the method can be used to fabricate various regiment nano-scale silica structure arrays in any laboratory with a regular oxygen-plasma-based cleaner or reactive-ion-etching equipment.

Effect of postgrowth heat treatment on the structural and optical properties of InP/InAsP/InP nanowires

International Nuclear Information System (INIS)

Cirlin, G. E.; Tchernycheva, M.; Patriarche, G.; Harmand, J.-C.

2012-01-01

The effect of the postgrowth annealing of InP/InAsP/InP heterostructural nanowires produced by molecular-beam epitaxy on their structural and optical properties is studied. It is shown that the procedure of short-term (1 min) annealing in an argon atmosphere provides a means for increasing the emission intensity of InAsP quantum dots, suppressing the emission from InAsP quantum wells formed as a result of lateral growth, and substantially reducing the density of structural defects in the nanowires.

Direct Photonic-Plasmonic Coupling and Routing in Single Nanowires

Energy Technology Data Exchange (ETDEWEB)

Yan, Rouxue; Pausauskie, Peter; Huang, Jiaxing; Yang, Piedong

2009-10-20

Metallic nanoscale structures are capable of supporting surface plasmon polaritons (SPPs), propagating collective electron oscillations with tight spatial confinement at the metal surface. SPPs represent one of the most promising structures to beat the diffraction limit imposed by conventional dielectric optics. Ag nano wires have drawn increasing research attention due to 2D sub-100 nm mode confinement and lower losses as compared with fabricated metal structures. However, rational and versatile integration of Ag nanowires with other active and passive optical components, as well as Ag nanowire based optical routing networks, has yet to be achieved. Here, we demonstrate that SPPs can be excited simply by contacting a silver nanowire with a SnO2 nanoribbon that serves both as an unpolarized light source and a dielectric waveguide. The efficient coupling makes it possible to measure the propagation-distance-dependent waveguide spectra and frequency-dependent propagation length on a single Ag nanowire. Furthermore, we have demonstrated prototypical photonic-plasmonic routing devices, which are essential for incorporating low-loss Ag nanowire waveguides as practical components into high-capacity photonic circuits.

Pd nanowire arrays as electrocatalysts for ethanol electrooxidation

Energy Technology Data Exchange (ETDEWEB)

Wang, Hong; Cheng, Faliang [Dongguan University of Technology, Dongguan 523106 (China); Xu, Changwei; Jiang, Sanping [School of Mechanical and Aerospace Engineering, Nanyang Technological University, Singapore 639798 (Singapore)

2007-05-15

Highly ordered Pd nanowire arrays were prepared by template-electrodeposition method using anodic aluminum oxide template. The Pd nanowire arrays, in this paper, have high electrochemical active surface and show excellent catalytic properties for ethanol electrooxidation in alkaline media. The activity of Pd nanowire arrays for ethanol oxidation is not only higher that of Pd film, but also higher than that of commercial E-TEK PtRu(2:1 by weight)/C. The micrometer sized pores and channels in nanowire arrays act as structure units. They make liquid fuel diffuse into and products diffuse out of the catalysts layer much easier, therefore, the utilization efficiency of catalysts gets higher. Pd nanowire arrays are stable catalysts for ethanol oxidation. The nanowire arrays may be a great potential in direct ethanol fuel cells and ethanol sensors. (author)

Failure mechanisms and electromechanical coupling in semiconducting nanowires

Directory of Open Access Journals (Sweden)

Peng B.

2010-06-01

Full Text Available One dimensional nanostructures, like nanowires and nanotubes, are increasingly being researched for the development of next generation devices like logic gates, transistors, and solar cells. In particular, semiconducting nanowires with a nonsymmetric wurtzitic crystal structure, such as zinc oxide (ZnO and gallium nitride (GaN, have drawn immense research interests due to their electromechanical coupling. The designing of the future nanowire-based devices requires component-level characterization of individual nanowires. In this paper, we present a unique experimental set-up to characterize the mechanical and electromechanical behaviour of individual nanowires. Using this set-up and complementary atomistic simulations, mechanical properties of ZnO nanowires and electromechanical properties of GaN nanowires were investigated. In ZnO nanowires, elastic modulus was found to depend on nanowire diameter decreasing from 190 GPa to 140 GPa as the wire diameter increased from 5 nm to 80 nm. Inconsistent failure mechanisms were observed in ZnO nanowires. Experiments revealed a brittle fracture, whereas simulations using a pairwise potential predicted a phase transformation prior to failure. This inconsistency is addressed in detail from an experimental as well as computational perspective. Lastly, in addition to mechanical properties, preliminary results on the electromechanical properties of gallium nitride nanowires are also reported. Initial investigations reveal that the piezoresistive and piezoelectric behaviour of nanowires is different from bulk gallium nitride.

Elastic properties and electron transport in InAs nanowires

Energy Technology Data Exchange (ETDEWEB)

Migunov, Vadim

2013-02-22

The electron transport and elastic properties of InAs nanowires grown by chemical vapor deposition on InAs (001) substrate were studied experimentally, in-situ in a transmission electron microscope (TEM). A TEM holder allowing the measurement of a nanoforce while simultaneous imaging nanowire bending was used. Diffraction images from local areas of the wire were recorded to correlate elastic properties with the atomic structure of the nanowires. Another TEM holder allowing the application of electrical bias between the nanowire and an apex of a metallic needle while simultaneous imaging the nanowire in TEM or performing electron holography was used to detect mechanical vibrations in mechanical study or holographical observation of the nanowire inner potential in the electron transport studies. The combination of the scanning probe methods with TEM allows to correlate the measured electric and elastic properties of the nanowires with direct identification of their atomic structure. It was found that the nanowires have different atomic structures and different stacking fault defect densities that impacts critically on the elastic properties and electric transport. The unique methods, that were applied in this work, allowed to obtain dependencies of resistivity and Young's modulus of left angle 111 right angle -oriented InAs nanowires on defect density and diameter. It was found that the higher is the defect density the higher are the resistivity and the Young's modulus. Regarding the resistivity, it was deduced that the stacking faults increase the scattering of the electrons in the nanowire. These findings are consistent with the literature, however, the effect described by the other groups is not so pronounced. This difference can be attributed to the significant incompleteness of the physical models used for the data analysis. Regarding the elastic modulus, there are several mechanisms affecting the elasticity of the nanowires discussed in the thesis. It

Superconductive silicon nanowires using gallium beam lithography.

Energy Technology Data Exchange (ETDEWEB)

Henry, Michael David; Jarecki, Robert Leo,

2014-01-01

This work was an early career LDRD investigating the idea of using a focused ion beam (FIB) to implant Ga into silicon to create embedded nanowires and/or fully suspended nanowires. The embedded Ga nanowires demonstrated electrical resistivity of 5 m-cm, conductivity down to 4 K, and acts as an Ohmic silicon contact. The suspended nanowires achieved dimensions down to 20 nm x 30 nm x 10 m with large sensitivity to pressure. These structures then performed well as Pirani gauges. Sputtered niobium was also developed in this research for use as a superconductive coating on the nanowire. Oxidation characteristics of Nb were detailed and a technique to place the Nb under tensile stress resulted in the Nb resisting bulk atmospheric oxidation for up to years.

Transport and structural characterization of solution-processable doped ZnO nanowires

KAUST Repository

Noriega, Rodrigo

2009-08-18

The use of ZnO nanowires has become a widespread topic of interest in optoelectronics. In order to correctly assess the quality, functionality, and possible applications of such nanostructures it is important to accurately understand their electrical and optical properties. Aluminum- and gallium-doped crystalline ZnO nanowires were synthesized using a low-temperature solution-based process, achieving dopant densities of the order of 1020 cm-3. A non-contact optical technique, photothermal deflection spectroscopy, is used to characterize ensembles of ZnO nanowires. By modeling the free charge carrier absorption as a Drude metal, we are able to calculate the free carrier density and mobility. Determining the location of the dopant atoms in the ZnO lattice is important to determine the doping mechanisms of the ZnO nanowires. Solid-state NMR is used to distinguish between coordination environments of the dopant atoms.

Quantum-confined nanowires as vehicles for enhanced electrical transport

International Nuclear Information System (INIS)

Mohammad, S Noor

2012-01-01

Electrical transport in semiconductor nanowires taking quantum confinement and dielectric confinement into account has been studied. A distinctly new route has been employed for the study. The fundamental science underlying the model is based on a relationship between the quantum confinement and the structural disorder of the nanowire surface. The role of surface energy and thermodynamic imbalance in nanowire structural disorder has been described. A model for the diameter dependence of energy bandgap of nanowires has been developed. Ionized impurity scattering, dislocation scattering and acoustic phonon scattering have been taken into account to study carrier mobility. A series of calculations on silicon nanowires show that carrier mobility in nanowires can be greatly enhanced by quantum confinement and dielectric confinement. The electron mobility can, for example, be a factor of 2–10 higher at room temperature than the mobility in a free-standing silicon nanowire. The calculated results agree well with almost all experimental and theoretical results available in the literature. They successfully explain experimental observations not understood before. The model is general and applicable to nanowires from all possible semiconductors. It is perhaps the first physical model highlighting the impact of both quantum confinement and dielectric confinement on carrier transport. It underscores the basic causes of thin, lowly doped nanowires in the temperature range 200 K ≤ T ≤ 500 K yielding very high carrier mobility. It suggests that the scattering by dislocations (stacking faults) can be very detrimental for carrier mobility. (paper)

PREFACE: Synthesis and integration of nanowires

Science.gov (United States)

Samuelson, L.

2006-06-01

The field of semiconductor nanowires has attracted much attention in recent years, from the areas of basic materials science, advanced characterization and technology, as well as from the perspective of the applications of nanowires. Research on large-sized whiskers and wires had already begun in the 1960s with the pioneering work of Wagner, as well as by other researchers. It was, however, in the early 1990s that Kenji Hiruma at Hitachi Central Research Laboratories in Japan first succeeded in developing methods for the growth of nanowires with dimensions on the scale of 10-100 nm, thereby initiating the field of growth and applications of nanowires, with a strong emphasis on epitaxial nucleation of nanowires on a single-crystalline substrate. Starting from the mid-1990s, the field developed very rapidly with the number of papers on the subject growing from ten per year to several thousand papers on the subject published annually today, although with a rather generous definition of the concept of nanowires. With this rapid development we have seen many new and different approaches to the growth of nanowires, technological advances leading to a more well-controlled formation of nanowires, new innovative methods for the characterization of structures, as well as a wealth of approaches towards the use of nanowires in electronics, photonics and sensor applications. This issue contains contributions from many different laboratories, each adding significant detail to the development of the field of research. The contributions cover issues such as basic growth, advanced characterization and technology, and application of nanowires. I would like to acknowledge the shared responsibilities for this special issue of Nanotechnology on the synthesis and integration of nanowires with my co-Editors, S Tong Lee and M Sunkara, as well as the highly professional support from Dr Nina Couzin, Dr Ian Forbes and the Nanotechnology team from the Institute of Physics Publishing.

Novel mechanical behaviors of wurtzite CdSe nanowires

Energy Technology Data Exchange (ETDEWEB)

Fu, Bing [Shanghai Normal University, Department of Physics (China); Chen, Li [MCPHS University, School of Arts and Sciences (United States); Xie, Yiqun; Feng, Jie; Ye, Xiang, E-mail: yexiang@shnu.edu.cn [Shanghai Normal University, Department of Physics (China)

2015-09-15

As an important semiconducting nanomaterial, CdSe nanowires have attracted much attention. Although many studies have been conducted in the electronic and optical properties of CdSe NWs, the mechanical properties of Wurtzite (WZ) CdSe nanowires remain unclear. Using molecular dynamics simulations, we have studied the tensile mechanical properties and behaviors of [0001]-oriented Wurtzite CdSe nanowires. By monitoring the stretching processes of CdSe nanowires, three distinct structures are found: the WZ wire, a body-centered tetragonal structure with four-atom rings (denoted as BCT-4), and a structure that consists of ten-atom rings with two four-atom rings (denoted as TAR-4) which is observed for the first time. Not only the elastic tensile characteristics are highly reversible under unloading, but a reverse transition between TAR-4 and BCT-4 is also observed. The stretching processes also have a strong dependence on temperature. A tubular structure similar to carbon nanotubes is observed at 150 K, a single-atom chain is formed at 300, 350 and 450 K, and a double-atom chain is found at 600 K. Our findings on tensile mechanical properties of WZ CdSe nanowires does not only provide inspiration to future study on other properties of CdSe nanomaterials but also help design and build efficient nanoscale devices.

Poly(1-(2-carboxyethyl)pyrrole)/polypyrrole composite nanowires for glucose biosensor

International Nuclear Information System (INIS)

Jiang Hairong; Zhang Aifeng; Sun Yanan; Ru Xiaoning; Ge Dongtao; Shi Wei

2012-01-01

A novel glucose biosensor based on poly(1-(2-carboxyethyl)pyrrole) (PPyCOOH)/polypyrrole (PPy) composite nanowires was developed by immobilizing glucose oxidase (GOD) on the nanowires via covalent linkages. The PPyCOOH/PPy composite nanowires were fabricated by a facile two-step electrochemical synthesis route. First, PPy nanowires were synthesized in phosphate buffer solution using organic sulfonic acid, p-toluenesulfonate acid, as soft-template. Then, PPyCOOH/PPy composite nanowires were obtained by polymerizing 1-(2-carboxyethyl)pyrrole onto PPy nanowires via electrochemical method. Scanning electron microscopic, FT-IR spectra, X-ray photoelectron spectroscopy and cyclic voltammograms were used to characterize the structural and electrical behaviors of the composite nanowires. The PPyCOOH/PPy composite nanowires exhibited uniform diameter, high reactive site (-COOH), large specific surface, excellent electroactivity and good adhesion to electrode. The glucose biosensor was constructed by covalently coupling GOD to the composite nanowires. The biosensor response was rapid (5 s), highly sensitive (33.6 μA mM −1 cm −2 ) with a wide linear range (up to 10.0 mM) and low detection limit (0.63 μM); it also exhibited high stability and specificity to glucose. The attractive electrochemical and structural properties of PPyCOOH/PPy composite nanowires suggested potential application for electrocatalysis and biosensor.

Epitaxy of advanced nanowire quantum devices

Science.gov (United States)

Gazibegovic, Sasa; Car, Diana; Zhang, Hao; Balk, Stijn C.; Logan, John A.; de Moor, Michiel W. A.; Cassidy, Maja C.; Schmits, Rudi; Xu, Di; Wang, Guanzhong; Krogstrup, Peter; Op Het Veld, Roy L. M.; Zuo, Kun; Vos, Yoram; Shen, Jie; Bouman, Daniël; Shojaei, Borzoyeh; Pennachio, Daniel; Lee, Joon Sue; van Veldhoven, Petrus J.; Koelling, Sebastian; Verheijen, Marcel A.; Kouwenhoven, Leo P.; Palmstrøm, Chris J.; Bakkers, Erik P. A. M.

2017-08-01

Semiconductor nanowires are ideal for realizing various low-dimensional quantum devices. In particular, topological phases of matter hosting non-Abelian quasiparticles (such as anyons) can emerge when a semiconductor nanowire with strong spin-orbit coupling is brought into contact with a superconductor. To exploit the potential of non-Abelian anyons—which are key elements of topological quantum computing—fully, they need to be exchanged in a well-controlled braiding operation. Essential hardware for braiding is a network of crystalline nanowires coupled to superconducting islands. Here we demonstrate a technique for generic bottom-up synthesis of complex quantum devices with a special focus on nanowire networks with a predefined number of superconducting islands. Structural analysis confirms the high crystalline quality of the nanowire junctions, as well as an epitaxial superconductor-semiconductor interface. Quantum transport measurements of nanowire ‘hashtags’ reveal Aharonov-Bohm and weak-antilocalization effects, indicating a phase-coherent system with strong spin-orbit coupling. In addition, a proximity-induced hard superconducting gap (with vanishing sub-gap conductance) is demonstrated in these hybrid superconductor-semiconductor nanowires, highlighting the successful materials development necessary for a first braiding experiment. Our approach opens up new avenues for the realization of epitaxial three-dimensional quantum architectures which have the potential to become key components of various quantum devices.

Bismuth alloying properties in GaAs nanowires

Energy Technology Data Exchange (ETDEWEB)

Ding, Lu [State Key Laboratory of Information Photonics and Optical Communications, Ministry of Education, Beijing University of Posts and Telecommunications, PO Box 72, Beijing 100876 (China); Lu, Pengfei, E-mail: photon.bupt@gmail.com [State Key Laboratory of Information Photonics and Optical Communications, Ministry of Education, Beijing University of Posts and Telecommunications, PO Box 72, Beijing 100876 (China); Cao, Huawei; Cai, Ningning; Yu, Zhongyuan [State Key Laboratory of Information Photonics and Optical Communications, Ministry of Education, Beijing University of Posts and Telecommunications, PO Box 72, Beijing 100876 (China); Gao, Tao [Institute of Atomic and Molecular Physics, Sichuan University, Chengdu 610065 (China); Wang, Shumin [State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050 (China); Photonics Laboratory, Department of Microtechnology and Nanoscience, Chalmers University of Technology, 41296 Gothenburg (Sweden)

2013-09-15

First-principles calculations have been performed to investigate the structural, electronic and optical properties of bismuth alloying in GaAs nanowires. A typical model of Ga{sub 31}As{sub 31} nanowires is introduced for its reasonable band gap. The band gap of GaAs{sub 1−x}Bi{sub x} shrinks clearly with the increasing Bi concentration and the band edge shifts when spin–orbit coupling (SOC) is considered. The insertion of Bi atom leads to hybridization of Ga/As/Bi p states which contributes a lot around Fermi level. Scissor effect is involved. The optical properties are presented, including dielectric function, optical absorption spectra and reflectivity, which are also varied with the increasing of Bi concentrations. - Graphical abstract: Top view of Bi-doped GaAs nanowires. Ga, As, and Bi atoms are denoted with grey, purple and red balls, respectively. Display Omitted - Highlights: • A typical model of Ga{sub 31}As{sub 31} nanowires is introduced for its reasonable band gap. • The band gap of GaAs{sub 1−x}Bi{sub x} shrinks clearly with the increasing Bi concentration. • The band edge shifts when spin–orbit coupling (SOC) is considered. • The insertion of Bi atom leads to hybridization of Ga/As/Bi p states.

Synthesis of Indium Nanowires by Galvanic Displacement and Their Optical Properties

Directory of Open Access Journals (Sweden)

Hope Greg

2008-01-01

Full Text Available Abstract Single crystalline indium nanowires were prepared on Zn substrate which had been treated in concentrated sulphuric acid by galvanic displacement in the 0.002 mol L−1In2(SO43-0.002 mol L−1SeO2-0.02 mol L−1SDS-0.01 mol L−1citric acid aqueous solution. The typical diameter of indium nanowires is 30 nm and most of the nanowires are over 30 μm in length. XRD, HRTEM, SAED and structural simulation clearly demonstrate that indium nanowires are single-crystalline with the tetragonal structure, the growth direction of the nanowires is along [100] facet. The UV-Vis absorption spectra showed that indium nanowires display typical transverse resonance of SPR properties. The surfactant (SDS and the pretreatment of Zn substrate play an important role in the growth process. The mechanism of indium nanowires growth is the synergic effect of treated Zn substrate (hard template and SDS (soft template.

Molecular beam epitaxial growth and characterization of Al(Ga)N nanowire deep ultraviolet light emitting diodes and lasers

International Nuclear Information System (INIS)

Mi, Z; Zhao, S; Djavid, M; Liu, X; Kang, J; Woo, S Y; Bugnet, M; Botton, G A; Kong, X; Guo, H; Ji, W; Liu, Z

2016-01-01

We report on the detailed molecular beam epitaxial growth and characterization of Al(Ga)N nanowire heterostructures on Si and their applications for deep ultraviolet light emitting diodes and lasers. The nanowires are formed under nitrogen-rich conditions without using any metal catalyst. Compared to conventional epilayers, Mg-dopant incorporation is significantly enhanced in nearly strain- and defect-free Al(Ga)N nanowire structures, leading to efficient p -type conduction. The resulting Al(Ga)N nanowire LEDs exhibit excellent performance, including a turn-on voltage of ∼5.5 V for an AlN nanowire LED operating at 207 nm. The design, fabrication, and performance of an electrically injected AlGaN nanowire laser operating in the UV-B band is also presented. (paper)

Interactions of Cells with Magnetic Nanowires and Micro Needles

KAUST Repository

Perez, Jose E.

2017-12-01

The use of nanowires, nano and micro needles in biomedical applications has markedly increased in the past years, mainly due to attractive properties such as biocompatibility and simple fabrication. Specifically, these structures have shown promise in applications including cell separation, tumor cell capture, intracellular delivery, cell therapy, cancer treatment and as cell growth scaffolds. The work proposed here aims to study two platforms for different applications: a vertical magnetic nanowire array for mesenchymal stem cell differentiation and a micro needle platform for intracellular delivery. First, a thorough evaluation of the cytotoxicity of nanowires was done in order to understand how a biological system interacts with high aspect ratio structures. Nanowires were fabricated through pulsed electrodeposition and characterized by electron microscopy, vibrating sample magnetometry and energy dispersive X-ray spectroscopy. Studies of biocompatibility, cell death, cell membrane integrity, nanowire internalization and intracellular dissolution were all performed in order to characterize the cell response. Results showed a variable biocompatibility depending on nanowire concentration and incubation time, with cell death resulting from an apoptotic pathway arising after internalization. A vertical array of nanowires was then used as a scaffold for the differentiation of human mesenchymal stem cells. Using fluorescence and electron microscopy, the interactions between the dense array of nanowires and the cells were analyzed, as well as the biocompatibility of the array and its effects on cell differentiation. A magnetic field was additionally applied on the substrate to observe a possible differentiation. Stem cells grown on this scaffold showed a cytoskeleton and focal adhesion reorganization, and later expressed the osteogenic marker osteopontin. The application of a magnetic field counteracted this outcome. Lastly, a micro needle platform was fabricated

Improved seedless hydrothermal synthesis of dense and ultralong ZnO nanowires

International Nuclear Information System (INIS)

Tian Jinghua; Hu Jie; Li Sisi; Zhang Fan; Liu Jun; Shi Jian; Li Xin; Chen Yong; Tian Zhongqun

2011-01-01

Seedless hydrothermal synthesis has been improved by introducing an adequate content of ammonia into the nutrient solution, allowing the fabrication of dense and ultralong ZnO nanowire arrays over large areas on a substrate. The presence of ammonia in the nutrient solution facilitates the high density nucleation of ZnO on the substrate which is critical for the nanowire growth. In order to achieve an optimal growth, the growth conditions have been studied systematically as a function of ammonia content, growth temperature and incubation time. The effect of polyethyleneimine (PEI) has also been studied but shown to be of no benefit to the nucleation of ZnO. Ultradense and ultralong ZnO nanowires could be obtained under optimal growth conditions, showing no fused structure at the foot of the nanowire arrays. Due to different reaction kinetics, four growth regimes could be attributed, including the first fast growth, equilibrium phase, second fast growth and final erosion. Combining this simple method with optical lithography, ZnO nanowires could be grown selectively on patterned areas. In addition, the as-grown ZnO nanowires could be used for the fabrication of a piezoelectric nanogenerator. Compared to the device of ZnO nanowires made by other methods, a more than twice voltage output has been obtained, thereby proving an improved performance of our growth method.

UV irradiation assisted growth of ZnO nanowires on optical fiber surface

Energy Technology Data Exchange (ETDEWEB)

Gong, Bo; Shi, Tielin; Liao, Guanglan; Li, Xiaoping; Huang, Jie; Zhou, Temgyuan; Tang, Zirong, E-mail: zirong@mail.hust.edu.cn

2017-06-01

Highlights: • A new fabrication process combined a hydrothermal process with UV irradiation from optical fiber is developed. • The growth of ZnO nanowires is efficient in the utilization of UV light. • A novel hybrid structure which integrates ZnO nanowires on optical fiber surface is synthesized. • The UV assisted growth of ZnO nanowires shows preferred orientation and better quality. • A mechanism of growing ZnO nanowires under UV irradiation is proposed. - Abstract: In this paper, a novel approach was developed for the enhanced growth of ZnO nanowires on optical fiber surface. The method combined a hydrothermal process with the efficient UV irradiation from the fiber core, and the effects of UV irradiation on the growth behavior of ZnO nanowires were investigated. The results show that UV irradiation had great effects on the preferred growth orientation and the quality of the ZnO nanowires. The crystallization velocity along the c-axis would increase rapidly with the increase of the irradiation power, while the growth process in the lateral direction was marginally affected by the irradiation. The structure of ZnO nanowires also shows less oxygen vacancy with UV irradiation of higher power. The developed approach is applicable for the efficient growth of nanowires on the fiber surface, and the ZnO nanowires/optical fiber hybrid structures have great potentials for a wide variety of applications such as optical fiber sensors and probes.

Electrospinning synthesis of superconducting BSCCO nanowires

International Nuclear Information System (INIS)

Duarte, Edgar A.; Quintero, Pedro A.; Meisel, Mark W.; Nino, Juan C.

2013-01-01

Highlights: •Bi 2 Sr 2 CaCu 2 O 8+x nanowires 150 nm to 250 nm thick are synthesized using the electrospinning. •Bi 2 Sr 2 CaCu 2 O 8+x nanowires are obtained after a heat treatment at 850 °C. •Bi 2 Sr 2 CaCu 2 O 8+x nanowires show a T c = 78.7 K consistent with bulk superconductor behavior. -- Abstract: This paper presents the synthesis and characterization of Bi 2 Sr 2 CaCu 2 O 8+x superconducting nanowires. Bi 2 Sr 2 CaCu 2 O 8+x nanowires with a T c = 78.7 K are synthesized using the electrospinning process employing sol–gel precursors. A sol–gel methodology is used to obtain a homogeneous PVP solution containing Bi, Sr, Ca, and Cu acetates. Mats of randomly oriented nanowires and aligned nanowires are also collected. After a heat treatment at 850 °C in ambient atmosphere using heating rates of 100 and 400 °C/h, fully crystallized Bi 2 Sr 2 CaCu 2 O 8+x nanowires are obtained. The morphology, microstructure, and crystal structure of these nanowires are then examined to reveal a rectangular morphology having typical wire thickness in the range of 150–250 nm, and a wire width between 400 and 600 nm. DC magnetization studies are conducted to investigate the critical transition temperature (T c ) of Bi 2 Sr 2 CaCu 2 O 8+x nanowires and to compare their magnetic properties to those of bulk Bi 2 Sr 2 CaCu 2 O 8+x powder. The T c for the commercial powder is observed at 78.6 K, and that of the obtained nanowires at 78.7 K. These results point to the superconducting nature of Bi 2 Sr 2 CaCu 2 O 8+x nanowires, and the potential of the electrospinning process for the synthesis of this superconductor material

Influence of oxygen incorporation on the defect structure of GaN microrods and nanowires. An XPS and CL study

International Nuclear Information System (INIS)

Guzmán, G; Herrera, M; Silva, R; Vásquez, G C; Maestre, D

2016-01-01

We report a cathodoluminescence (CL) and x-ray photoelectron spectroscopy (XPS) study of the influence of oxygen incorporation on the defect structure of GaN microrods and nanowires. The micro- and nanostructures were synthesized by a thermal evaporation method, which enables us to incorporate oxygen at different concentrations by varying the growth temperature. HR-TEM measurements revealed that oxygen generates stacking fault defects and edge dislocations along the GaN nanowires. Amorphous GaO x N y compounds were segregated on the surface of the nanowires. XPS, XRD and CL measurements suggests that the microrods and nanowires were composed of amorphous oxynitride compounds at their surface and GaN at their inner region. CL measurements revealed that the nanostructures generated an emission of 2.68 eV that increased in intensity proportionally to their oxygen content. We have attributed this emission to electronic transitions between donor substitutional-oxygen (O N ) and acceptor interstitial-oxygen (O i ) state levels. (paper)

Atomic-Resolution Spectrum Imaging of Semiconductor Nanowires.

Science.gov (United States)

Zamani, Reza R; Hage, Fredrik S; Lehmann, Sebastian; Ramasse, Quentin M; Dick, Kimberly A

2018-03-14

Over the past decade, III-V heterostructure nanowires have attracted a surge of attention for their application in novel semiconductor devices such as tunneling field-effect transistors (TFETs). The functionality of such devices critically depends on the specific atomic arrangement at the semiconductor heterointerfaces. However, most of the currently available characterization techniques lack sufficient spatial resolution to provide local information on the atomic structure and composition of these interfaces. Atomic-resolution spectrum imaging by means of electron energy-loss spectroscopy (EELS) in the scanning transmission electron microscope (STEM) is a powerful technique with the potential to resolve structure and chemical composition with sub-angstrom spatial resolution and to provide localized information about the physical properties of the material at the atomic scale. Here, we demonstrate the use of atomic-resolution EELS to understand the interface atomic arrangement in three-dimensional heterostructures in semiconductor nanowires. We observed that the radial interfaces of GaSb-InAs heterostructure nanowires are atomically abrupt, while the axial interface in contrast consists of an interfacial region where intermixing of the two compounds occurs over an extended spatial region. The local atomic configuration affects the band alignment at the interface and, hence, the charge transport properties of devices such as GaSb-InAs nanowire TFETs. STEM-EELS thus represents a very promising technique for understanding nanowire physical properties, such as differing electrical behavior across the radial and axial heterointerfaces of GaSb-InAs nanowires for TFET applications.

Constricted nanowire with stabilized magnetic domain wall

International Nuclear Information System (INIS)

Sbiaa, R.; Al Bahri, M.

2016-01-01

Domain wall (DW)-based magnetic memory offers the possibility for increasing the storage capacity. However, stability of DW remains the major drawback of this scheme. In this letter, we propose a stepped nanowire for pinning DW in a desirable position. From micromagnetic simulation, the proposed design applied to in-plane magnetic anisotropy materials shows that by adjusting the nanowire step size and its width it is possible to stabilize DW for a desirable current density range. In contrast, only a movement of DW could be seen for conventional nanowire. An extension to a multi-stepped nanowire could be used for multi-bit per cell magnetic memory. - Highlights: • A stepped nanowire is proposed to pin domain wall in desired position. • The new structure can be made by a simple off set of two single nanowires. • The critical current for moving domain wall from one state to the other could be tuned by adjusting the geometry of the device. • The device could be used for multi-bit per cell memory by extending the steps in the device.

Preparation and Characterization of Tin Oxide Nanowires

Directory of Open Access Journals (Sweden)

A. Kabiri

2013-12-01

Full Text Available The aim of this research is preparation of SnO2 nanowires by means of Thermal chemical reaction vapor transport deposition (TCRVTD method from SnO powders. The morphology, chemical composition and microstructure properties of the nanowires are characterized using field emission scanning electron microscope (FE-SEM, EDS, and XRD. The XRD diffraction patterns reveal that the SnO2 nanowires have been grown in the form of tetragonal crystal structures with the lattice parameter of a=b=0.440 nm, and c=0.370 nm. The SEM images reveal that SnO2 nanowires have successfully been grown on the Si substrate. The EDS patterns show that only elements of Sn, O and Au are detected. Prior to the VLS process the substrate is coated by a thin layer of Au. The diameter of nanowires is measured to be something between 20-100 nm.

Mechanical behavior enhancement of ZnO nanowire by embedding different nanowires

Directory of Open Access Journals (Sweden)

Ali Vazinishayan

2018-06-01

Full Text Available In this work, we employed commercial finite element modeling (FEM software package ABAQUS to analyze mechanical properties of ZnO nanowire before and after embedding with different kinds of nanowires, having different materials and cross-section models such as Au (circular, Ag (pentagonal and Si (rectangular using three point bending technique. The length and diameter of the ZnO nanowire were measured to be 12,280 nm and 103.2 nm, respectively. In addition, Au, Ag and Si nanowires were considered to have the length of 12,280 nm and the diameter of 27 nm. It was found that after embedding Si nanowire with rectangular cross-section into the ZnO nanowire, the distribution of Von Misses stresses criterion, displacement and strain were decreased than the other nanowires embedded. The highest stiffness, the elastic deformation and the high strength against brittle failure have been made by Si nanowire comparison to the Au and Ag nanowires, respectively. Keywords: Nanowires, Material effects, Mechanical properties, Brittle failure

High performance and durability of order-structured cathode catalyst layer based on TiO_2@PANI core-shell nanowire arrays

International Nuclear Information System (INIS)

Chen, Ming; Wang, Meng; Yang, Zhaoyi; Wang, Xindong

2017-01-01

Highlights: • TiO_2@PANI core-shell nanowire arrays were prepared and applied as catalyst support. • As-prepared Pt-TiO_2@PANI core-shell nanowire arrays were applied as order-structured cathode catalyst layer. • The novel cathode catalyst structure without Nafion"® ionomer enhance the performance and durability of PEMFC. - Abstract: In this paper, an order-structured cathode catalyst layer consisting of Pt-TiO_2@PANI core-shell nanowire arrays that in situ grown on commercial gas diffusion layer (GDL) are prepared and applied to membrane electrode assembly (MEA) of proton exchange membrane fuel cell (PEMFC). In order to prepare the TiO_2@PANI core-shell nanowire arrays with suitable porosity and prominent conductivity, the morphologies of the TiO_2 nanoarray and electrochemical polymerization process of aniline are schematically investigated. The MEA with order-structured cathode catalyst layer is assembled in the single cell to evaluate the electrochemical performance and durability of PEMFC. As a result, the PEMFC with order-structured cathode catalyst layer shows higher peak power density (773.54 mW cm"−"2) than conventional PEMFC (699.30 mW cm"−"2). Electrochemically active surface area (ECSA) and charge transfer impedance (R_c_t) are measured before and after accelerated degradation test (ADT), and the corresponding experimental results indicate the novel cathode structure exhibits a better stability with respect to conventional cathode. The enhanced electrochemical performance and durability toward PEMFC can be ascribed to the order-structured cathode nanoarray structure with high specific surface area increases the utilization of catalyst and reduces the tortuosity of transport pathways, and the synergistic effect between TiO_2@PANI support and Pt nanoparticles promotes the high efficiency of electrochemical reaction and improves the stability of catalyst. This research provides a facile and controllable method to prepare order-structured

X-ray diffraction from single GaAs nanowires

Energy Technology Data Exchange (ETDEWEB)

Biermanns, Andreas

2012-11-12

In recent years, developments in X-ray focussing optics have allowed to produce highly intense, coherent X-ray beams with spot sizes in the range of 100 nm and below. Together with the development of new experimental stations, X-ray diffraction techniques can now be applied to study single nanometer-sized objects. In the present work, X-ray diffraction is applied to study different aspects of the epitaxial growth of GaAs nanowires. Besides conventional diffraction methods, which employ X-ray beams with dimensions of several tens of {mu}m, special emphasis lies on the use of nanodiffraction methods which allow to study single nanowires in their as-grown state without further preparation. In particular, coherent X-ray diffraction is applied to measure simultaneously the 3-dimensional shape and lattice parameters of GaAs nanowires grown by metal-organic vapor phase epitaxy. It is observed that due to a high density of zinc-blende rotational twins within the nanowires, their lattice parameter deviates systematically from the bulk zinc-blende phase. In a second step, the initial stage in the growth of GaAs nanowires on Si (1 1 1) surfaces is studied. This nanowires, obtained by Ga-assisted growth in molecular beam epitaxy, grow predominantly in the cubic zinc-blende structure, but contain inclusions of the hexagonal wurtzite phase close to their bottom interface. Using nanodiffraction methods, the position of the different structural units along the growth axis is determined. Because the GaAs lattice is 4% larger than silicon, these nanowires release their lattice mismatch by the inclusion of dislocations at the interface. Whereas NWs with diameters below 50 nm are free of strain, a rough interface structure in nanowires with diameters above 100 nm prevents a complete plastic relaxation, leading to a residual strain at the interface that decays elastically along the growth direction. Finally, measurements on GaAs-core/InAs-shell nanowire heterostructures are presented

Towards an elastic model of wurtzite AlN nanowires

International Nuclear Information System (INIS)

Mitrushchenkov, A; Chambaud, G; Yvonnet, J; He, Q-C

2010-01-01

Starting with ab initio calculations of AlN wurtzite [0001] nanowires with diameters up to 4 nm, a finite element method is developed to deal with larger nanostructures/nanoparticles. The ab initio calculations show that the structure of the nanowires can be well represented by an internal part with AlN bulk elastic properties, and one atomic surface layer with its own elastic behavior. The proposed finite element method includes surface elements with their own elastic properties using surface elastic coefficients deduced from the ab initio calculations. The elastic properties obtained with the finite element model compare very well with those obtained with the full ab initio calculations.

The influence of thermal annealing on structure and oxidation of iron nanowires

Directory of Open Access Journals (Sweden)

Krajewski Marcin

2015-03-01

Full Text Available Raman spectroscopy as well as Mössbauer spectroscopy were applied in order to study the phase composition of iron nanowires and its changes, caused by annealing in a neutral atmosphere at several temperatures ranging from 200°C to 800°C. As-prepared nanowires were manufactured via a simple chemical reduction in an external magnetic field. Both experimental techniques proved formation of the surface layer covered by crystalline iron oxides, with phase composition dependent on the annealing temperature (Ta. At higher Ta, hematite was the dominant phase in the nanowires.

Chirality-Discriminated Conductivity of Metal-Amino Acid Biocoordination Polymer Nanowires.

Science.gov (United States)

Zheng, Jianzhong; Wu, Yijin; Deng, Ke; He, Meng; He, Liangcan; Cao, Jing; Zhang, Xugang; Liu, Yaling; Li, Shunxing; Tang, Zhiyong

2016-09-27

Biocoordination polymer (BCP) nanowires are successfully constructed through self-assembly of chiral cysteine amino acids and Cd cations in solution. The varied chirality of cysteine is explored to demonstrate the difference of BCP nanowires in both morphology and structure. More interestingly and surprisingly, the electrical property measurement reveals that, although all Cd(II)/cysteine BCP nanowires behave as semiconductors, the conductivity of the Cd(II)/dl-cysteine nanowires is 4 times higher than that of the Cd(II)/l-cysteine or Cd(II)/d-cysteine ones. The origin of such chirality-discriminated characteristics registered in BCP nanowires is further elucidated by theoretical calculation. These findings demonstrate that the morphology, structure, and property of BCP nanostructures could be tuned by the chirality of the bridging ligands, which will shed light on the comprehension of chirality transcription as well as construction of chirality-regulated functional materials.

Magnetic properties of mosaic nanocomposites composed of nickel and cobalt nanowires

Energy Technology Data Exchange (ETDEWEB)

Castillo-Sepúlveda, S.; Corona, R.M. [Departamento de Física, Universidad de Santiago de Chile (USACH), Av. Ecuador 3493, 9170124 Santiago (Chile); Altbir, D. [Departamento de Física, Universidad de Santiago de Chile (USACH), Av. Ecuador 3493, 9170124 Santiago (Chile); Center for the Development of Nanoscience and Nanotechnology (CEDENNA), 9170124 Santiago (Chile); Escrig, J., E-mail: juan.escrig@usach.cl [Departamento de Física, Universidad de Santiago de Chile (USACH), Av. Ecuador 3493, 9170124 Santiago (Chile); Center for the Development of Nanoscience and Nanotechnology (CEDENNA), 9170124 Santiago (Chile)

2016-10-15

Mosaic nanocomposites composed of nickel and cobalt nanowires arranged in different configurations were investigated using Monte Carlo simulations and a simple model that considers single-domain structures including length corrections due to the shape anisotropy. Our results showed that for an ordered array both the coercivity and the remanence decrease linearly as a function of the concentration of nickel nanowires. Besides, we obtained that the magnetic properties of an array of a certain hard magnetic material (cobalt) will not change, unless we have more than 50% of nanowires of other soft magnetic material (nickel) in the array. In principle the second material could be other soft magnetic material, but could also be a nonmagnetic material or could even be a situation in which some of the pore arrays were not filled by electrodeposition. Therefore, our results allow us to predict the behavior of magnetic mosaic nanocomposites that are promising candidates for functional electrodes, sensors, and model catalysts. - Highlights: • Mosaic nanocomposites composed of magnetic nanowires were investigated. • Magnetic properties can be adjusted by varying the concentration of nanowires. • Our results allow us to predict the behavior of magnetic mosaic nanocomposites.

Thermal expansion behavior study of Co nanowire array with in situ x-ray diffraction and x-ray absorption fine structure techniques

Science.gov (United States)

Mo, Guang; Cai, Quan; Jiang, Longsheng; Wang, Wei; Zhang, Kunhao; Cheng, Weidong; Xing, Xueqing; Chen, Zhongjun; Wu, Zhonghua

2008-10-01

In situ x-ray diffraction and x-ray absorption fine structure techniques were used to study the structural change of ordered Co nanowire array with temperature. The results show that the Co nanowires are polycrystalline with hexagonal close packed structure without phase change up until 700 °C. A nonlinear thermal expansion behavior has been found and can be well described by a quadratic equation with the first-order thermal expansion coefficient of 4.3×10-6/°C and the second-order thermal expansion coefficient of 5.9×10-9/°C. The mechanism of this nonlinear thermal expansion behavior is discussed.

Mechanical behavior enhancement of ZnO nanowire by embedding different nanowires

Science.gov (United States)

Vazinishayan, Ali; Yang, Shuming; Lambada, Dasaradha Rao; Wang, Yiming

2018-06-01

In this work, we employed commercial finite element modeling (FEM) software package ABAQUS to analyze mechanical properties of ZnO nanowire before and after embedding with different kinds of nanowires, having different materials and cross-section models such as Au (circular), Ag (pentagonal) and Si (rectangular) using three point bending technique. The length and diameter of the ZnO nanowire were measured to be 12,280 nm and 103.2 nm, respectively. In addition, Au, Ag and Si nanowires were considered to have the length of 12,280 nm and the diameter of 27 nm. It was found that after embedding Si nanowire with rectangular cross-section into the ZnO nanowire, the distribution of Von Misses stresses criterion, displacement and strain were decreased than the other nanowires embedded. The highest stiffness, the elastic deformation and the high strength against brittle failure have been made by Si nanowire comparison to the Au and Ag nanowires, respectively.

Tunable, flexible antireflection layer of ZnO nanowires embedded in PDMS.

Science.gov (United States)

Kim, Min Kyu; Yi, Dong Kee; Paik, Ungyu

2010-05-18

In this article, we report the fabrication of ordered hybrid structures composed of ZnO nanowires and a polymeric matrix with a polymer precursor infiltrating the nanowire arrays. The antireflective properties of the resulting ZnO nanowire-embedded polydimethylsiloxane composite (ZPC) were investigated at various ZnO nanowire lengths and ZPC bending angles. Interestingly, we found that whereas the antireflective properties showed a strong dependence on the length of the embedded ZnO nanowires in PDMS, the bending of ZPC has little effect on the antireflective properties.

Alignment control and atomically-scaled heteroepitaxial interface study of GaN nanowires.

Science.gov (United States)

Liu, Qingyun; Liu, Baodan; Yang, Wenjin; Yang, Bing; Zhang, Xinglai; Labbé, Christophe; Portier, Xavier; An, Vladimir; Jiang, Xin

2017-04-20

Well-aligned GaN nanowires are promising candidates for building high-performance optoelectronic nanodevices. In this work, we demonstrate the epitaxial growth of well-aligned GaN nanowires on a [0001]-oriented sapphire substrate in a simple catalyst-assisted chemical vapor deposition process and their alignment control. It is found that the ammonia flux plays a key role in dominating the initial nucleation of GaN nanocrystals and their orientation. Typically, significant improvement of the GaN nanowire alignment can be realized at a low NH 3 flow rate. X-ray diffraction and cross-sectional scanning electron microscopy studies further verified the preferential orientation of GaN nanowires along the [0001] direction. The growth mechanism of GaN nanowire arrays is also well studied based on cross-sectional high-resolution transmission electron microscopy (HRTEM) characterization and it is observed that GaN nanowires have good epitaxial growth on the sapphire substrate following the crystallographic relationship between (0001) GaN ∥(0001) sapphire and (101[combining macron]0) GaN ∥(112[combining macron]0) sapphire . Most importantly, periodic misfit dislocations are also experimentally observed in the interface region due to the large lattice mismatch between the GaN nanowire and the sapphire substrate, and the formation of such dislocations will favor the release of structural strain in GaN nanowires. HRTEM analysis also finds the existence of "type I" stacking faults and voids inside the GaN nanowires. Optical investigation suggests that the GaN nanowire arrays have strong emission in the UV range, suggesting their crystalline nature and chemical purity. The achievement of aligned GaN nanowires will further promote the wide applications of GaN nanostructures toward diverse high-performance optoelectronic nanodevices including nano-LEDs, photovoltaic cells, photodetectors etc.

As-Grown Gallium Nitride Nanowire Electromechanical Resonators

Science.gov (United States)

Montague, Joshua R.

Technological development in recent years has led to a ubiquity of micro- and nano-scale electromechanical devices. Sensors for monitoring temperature, pressure, mass, etc., are now found in nearly all electronic devices at both the industrial and consumer levels. As has been true for integrated circuit electronics, these electromechanical devices have continued to be scaled down in size. For many nanometer-scale structures with large surface-to-volume ratio, dissipation (energy loss) becomes prohibitively large causing a decreasing sensitivity with decreasing sensor size. In this work, gallium nitride (GaN) nanowires are investigated as singly-clamped (cantilever) mechanical resonators with typical mechanical quality factors, Q (equal to the ratio of resonance frequency to peak full-width-at-half-maximum-power) and resonance frequencies, respectively, at or above 30,000, and near 1 MHz. These Q values---in vacuum at room temperature---indicate very low levels of dissipation; they are essentially the same as those for bulk quartz crystal resonators that form the basis of simple clocks and mass sensors. The GaN nanowires have lengths and diameters, respectively, of approximately 15 micrometers and hundreds of nanometers. As-grown GaN nanowire Q values are larger than other similarly-sized, bottom-up, cantilever resonators and this property makes them very attractive for use as resonant sensors. We demonstrate the capability of detecting sub-monolayer levels of atomic layer deposited (ALD) films, and the robust nature of the GaN nanowires structure that allows for their 'reuse' after removal of such layers. In addition to electron microscope-based measurement techniques, we demonstrate the successful capacitive detection of a single nanowire using microwave homodyne reflectometry. This technique is then extended to allow for simultaneous measurements of large ensembles of GaN nanowires on a single sample, providing statistical information about the distribution of

The preparation and cathodoluminescence of ZnS nanowires grown by chemical vapor deposition

International Nuclear Information System (INIS)

Huang, Meng-Wen; Cheng, Yin-Wei; Pan, Ko-Ying; Chang, Chen-Chuan; Shieu, F.S.; Shih, Han C.

2012-01-01

Highlights: ► ZnS nanowires have been achieved by thermal evaporation. ► The nanowires were 20–50 nm in diameter and up to tens of nanometers in length. ► Single-crystalline wurtzite and sphalerite ZnS phase are coexist in the nanowires. ► The ZnS nanowires showed almost identical blue luminescence at room temperature. ► ZnS nanowires may be appropriate for use in UV/blue LED phosphor materials. - Abstract: Single crystal ZnS nanowires were successfully synthesized in large quantities on Si (1 0 0) substrates by simple thermal chemical vapor deposition without using any catalyst. The morphology, composition, and crystal structure were characterized by field emission scanning electron microscopy (FESEM), X-ray diffraction (XRD), high-resolution transmission electron microscopy (HRTEM), energy-dispersive X-ray spectroscopy (EDX), X-ray photoelectron spectroscopy (XPS), and cathodoluminescence (CL) spectroscopy. SEM observations show that the nanowires have diameters about 20–50 nm and lengths up to several tens of micrometers. XRD and TEM results confirmed that the nanowires exhibited both wurtzite and zinc blende structures with growth directions aligned along [0 0 0 2] and [1 1 1], respectively. The CL spectrum revealed emission bands in the UV and blue regions. The blue emissions at 449 and ∼581 nm were attributed to surface states and impurity-related defects of the nanowires, respectively. The perfect crystal structure of the nanowires indicates their potential applications in nanotechnology and in the fabrication of nanodevices.

Effect of the nanowire diameter on the linearity of the response of GaN-based heterostructured nanowire photodetectors

Science.gov (United States)

Spies, Maria; Polaczyński, Jakub; Ajay, Akhil; Kalita, Dipankar; Luong, Minh Anh; Lähnemann, Jonas; Gayral, Bruno; den Hertog, Martien I.; Monroy, Eva

2018-06-01

Nanowire photodetectors are investigated because of their compatibility with flexible electronics, or for the implementation of on-chip optical interconnects. Such devices are characterized by ultrahigh photocurrent gain, but their photoresponse scales sublinearly with the optical power. Here, we present a study of single-nanowire photodetectors displaying a linear response to ultraviolet illumination. Their structure consists of a GaN nanowire incorporating an AlN/GaN/AlN heterostructure, which generates an internal electric field. The activity of the heterostructure is confirmed by the rectifying behavior of the current–voltage characteristics in the dark, as well as by the asymmetry of the photoresponse in magnitude and linearity. Under reverse bias (negative bias on the GaN cap segment), the detectors behave linearly with the impinging optical power when the nanowire diameter is below a certain threshold (≈80 nm), which corresponds to the total depletion of the nanowire stem due to the Fermi level pinning at the sidewalls. In the case of nanowires that are only partially depleted, their nonlinearity is explained by a nonlinear variation of the diameter of their central conducting channel under illumination.

Study of spin dynamics and damping on the magnetic nanowire arrays with various nanowire widths

Energy Technology Data Exchange (ETDEWEB)

Cho, Jaehun [Department of Physics, Inha University, Incheon, 402-751 (Korea, Republic of); Fujii, Yuya; Konioshi, Katsunori [Graduate School of Engineering Science, Osaka University, Toyonaka, Osaka 560-8531 (Japan); Yoon, Jungbum [Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117576 (Singapore); Kim, Nam-Hui; Jung, Jinyong [Department of Physics, Inha University, Incheon, 402-751 (Korea, Republic of); Miwa, Shinji [Graduate School of Engineering Science, Osaka University, Toyonaka, Osaka 560-8531 (Japan); Jung, Myung-Hwa [Department of Physics, Sogang University, Seoul, 121-742 (Korea, Republic of); Suzuki, Yoshishige [Graduate School of Engineering Science, Osaka University, Toyonaka, Osaka 560-8531 (Japan); You, Chun-Yeol, E-mail: cyyou@inha.ac.kr [Department of Physics, Inha University, Incheon, 402-751 (Korea, Republic of)

2016-07-01

We investigate the spin dynamics including Gilbert damping in the ferromagnetic nanowire arrays. We have measured the ferromagnetic resonance of ferromagnetic nanowire arrays using vector-network analyzer ferromagnetic resonance (VNA-FMR) and analyzed the results with the micromagnetic simulations. We find excellent agreement between the experimental VNA-FMR spectra and micromagnetic simulations result for various applied magnetic fields. We find that the same tendency of the demagnetization factor for longitudinal and transverse conditions, N{sub z} (N{sub y}) increases (decreases) as increasing the nanowire width in the micromagnetic simulations while N{sub x} is almost zero value in transverse case. We also find that the Gilbert damping constant increases from 0.018 to 0.051 as the increasing nanowire width for the transverse case, while it is almost constant as 0.021 for the longitudinal case. - Highlights: • We investigate the spin dynamic properties in the ferromagnetic nanowire arrays. • The demagnetization factors have similar tendency with the prism geometry results. • The Gilbert damping constant is increased from 0.018 to 0.051 as the increasing nanowire width for the transverse. • The Gilbert damping constant is almost constant as 0.021 for the longitudinal case.

Excitonic terahertz photoconductivity in intrinsic semiconductor nanowires

Science.gov (United States)

Yan, Jie-Yun

2018-06-01

Excitonic terahertz photoconductivity in intrinsic semiconductor nanowires is studied. Based on the excitonic theory, the numerical method to calculate the photoconductivity spectrum in the nanowires is developed, which can simulate optical pump terahertz-probe spectroscopy measurements on real nanowires and thereby calculate the typical photoconductivity spectrum. With the help of the energetic structure deduced from the calculated linear absorption spectrum, the numerically observed shift of the resonant peak in the photoconductivity spectrum is found to result from the dominant exciton transition between excited or continuum states to the ground state, and the quantitative analysis is in good agreement with the quantum plasmon model. Besides, the dependence of the photoconductivity on the polarization of the terahertz field is also discussed. The numerical method and supporting theoretical analysis provide a new tool for experimentalists to understand the terahertz photoconductivity in intrinsic semiconductor nanowires at low temperatures or for nanowires subjected to below bandgap photoexcitation, where excitonic effects dominate.

Aluminum-catalyzed silicon nanowires: Growth methods, properties, and applications

Energy Technology Data Exchange (ETDEWEB)

Hainey, Mel F.; Redwing, Joan M. [Department of Materials Science and Engineering, Materials Research Institute, The Pennsylvania State University, University Park, Pennsylvania 16802 (United States)

2016-12-15

Metal-mediated vapor-liquid-solid (VLS) growth is a promising approach for the fabrication of silicon nanowires, although residual metal incorporation into the nanowires during growth can adversely impact electronic properties particularly when metals such as gold and copper are utilized. Aluminum, which acts as a shallow acceptor in silicon, is therefore of significant interest for the growth of p-type silicon nanowires but has presented challenges due to its propensity for oxidation. This paper summarizes the key aspects of aluminum-catalyzed nanowire growth along with wire properties and device results. In the first section, aluminum-catalyzed nanowire growth is discussed with a specific emphasis on methods to mitigate aluminum oxide formation. Next, the influence of growth parameters such as growth temperature, precursor partial pressure, and hydrogen partial pressure on nanowire morphology is discussed, followed by a brief review of the growth of templated and patterned arrays of nanowires. Aluminum incorporation into the nanowires is then discussed in detail, including measurements of the aluminum concentration within wires using atom probe tomography and assessment of electrical properties by four point resistance measurements. Finally, the use of aluminum-catalyzed VLS growth for device fabrication is reviewed including results on single-wire radial p-n junction solar cells and planar solar cells fabricated with nanowire/nanopyramid texturing.

Self-diffusion in single crystalline silicon nanowires

Science.gov (United States)

Südkamp, T.; Hamdana, G.; Descoins, M.; Mangelinck, D.; Wasisto, H. S.; Peiner, E.; Bracht, H.

2018-04-01

Self-diffusion experiments in single crystalline isotopically controlled silicon nanowires with diameters of 70 and 400 nm at 850 and 1000 °C are reported. The isotope structures were first epitaxially grown on top of silicon substrate wafers. Nanowires were subsequently fabricated using a nanosphere lithography process in combination with inductively coupled plasma dry reactive ion etching. Three-dimensional profiling of the nanosized structure before and after diffusion annealing was performed by means of atom probe tomography (APT). Self-diffusion profiles obtained from APT analyses are accurately described by Fick's law for self-diffusion. Data obtained for silicon self-diffusion in nanowires are equal to the results reported for bulk silicon crystals, i.e., finite size effects and high surface-to-volume ratios do not significantly affect silicon self-diffusion. This shows that the properties of native point defects determined from self-diffusion in bulk crystals also hold for nanosized silicon structures with diameters down to 70 nm.

Nanowire modified carbon fibers for enhanced electrical energy storage

Science.gov (United States)

Shuvo, Mohammad Arif Ishtiaque; (Bill) Tseng, Tzu-Liang; Ashiqur Rahaman Khan, Md.; Karim, Hasanul; Morton, Philip; Delfin, Diego; Lin, Yirong

2013-09-01

The study of electrochemical super-capacitors has become one of the most attractive topics in both academia and industry as energy storage devices because of their high power density, long life cycles, and high charge/discharge efficiency. Recently, there has been increasing interest in the development of multifunctional structural energy storage devices such as structural super-capacitors for applications in aerospace, automobiles, and portable electronics. These multifunctional structural super-capacitors provide structures combining energy storage and load bearing functionalities, leading to material systems with reduced volume and/or weight. Due to their superior materials properties, carbon fiber composites have been widely used in structural applications for aerospace and automotive industries. Besides, carbon fiber has good electrical conductivity which will provide lower equivalent series resistance; therefore, it can be an excellent candidate for structural energy storage applications. Hence, this paper is focused on performing a pilot study for using nanowire/carbon fiber hybrids as building materials for structural energy storage materials; aiming at enhancing the charge/discharge rate and energy density. This hybrid material combines the high specific surface area of carbon fiber and pseudo-capacitive effect of metal oxide nanowires, which were grown hydrothermally in an aligned fashion on carbon fibers. The aligned nanowire array could provide a higher specific surface area that leads to high electrode-electrolyte contact area thus fast ion diffusion rates. Scanning Electron Microscopy and X-Ray Diffraction measurements are used for the initial characterization of this nanowire/carbon fiber hybrid material system. Electrochemical testing is performed using a potentio-galvanostat. The results show that gold sputtered nanowire carbon fiber hybrid provides 65.9% higher energy density than bare carbon fiber cloth as super-capacitor.

Molecular statics simulations of buckling and yielding of gold nanowires deformed in axial compression

International Nuclear Information System (INIS)

Jiang, W.; Batra, R.C.

2009-01-01

We use molecular statics simulations with the embedded atom method potential to delineate yielding (material instability) and buckling (structural instability) in gold nanowires deformed axially in compression. It is found that both local (stacking faults) and global instabilities occur when the gold nanowire yields but only global instabilities occur when the nanowire buckles. Furthermore strong surface effects reorient the lattice structure which significantly increases Young's modulus in the axial direction and cause a nanowire of relatively small slenderness ratio (e.g., 14) to buckle. Upon complete unloading of the nanowires, the average axial stress and the total potential energy revert to their values in the reference configuration for the nanowires that buckled but not for the one that yielded.

Wurtzite InP nanowire arrays grown by selective area MOCVD

International Nuclear Information System (INIS)

Chu, Hyung-Joon; Stewart, Lawrence; Yeh, Ting-Wei; Dapkus, P.D.

2010-01-01

InP nanowires are a unique material phase because this normally zincblende material forms in the wurtzite crystal structure below a critical diameter owing to the contribution of sidewalls to the total formation energy. This may allow control of the carrier transport and optical properties of InP nanowires for applications such as nano scale transistors, lasers and detectors. In this work, we describe the fabrication of InP nanowire arrays by selective area growth using MOCVD in the diameter range where the wurtzite structure is formed. The spatial growth rate in selective area growth is modeled by a diffusion model for the precursors. The proposed model achieves an average error of 9%. Electron microscopy shows that the grown InP nanowires are in the wurtzite crystal phase with many stacking faults. The threshold diameter of the crystal phase transition of InP nanowires is larger than the thermodynamic estimation. In order to explain this tendency, we propose a surface kinetics model based on a 2 x 2 reconstruction. This model can explain the increased tendency for wurtzite nanowire formation on InP (111)A substrates and the preferred growth direction of binary III-V compound semiconductor nanowires. (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Review on Raman scattering in semiconductor nanowires: I. theory

Science.gov (United States)

Cantarero, Andrés

2013-01-01

Raman scattering is a nondestructive technique that is able to supply information on the crystal and electronic structures, strain, temperature, phonon-phonon, and electron-phonon interaction. In the particular case of semiconductor nanowires, Raman scattering provides additional information related to surfaces. Although correct, a theoretical approach to analyze the surface optical modes loses critical information when retardation is neglected. A comparison of the retarded and unretarded approaches clarifies the role of the electric and magnetic polarization in the Raman selection rules. Since most III-V compounds growing in the zincblende phase change their crystal structure to wurtzite when growing as nanowires, the polariton description will be particularized for these two important crystal phases. Confined phonons exist in cylindrical nanowires and couple with longitudinal and transverse modes due to the presence of the nanowire's surface. This coupling vanishes in the case of rotational symmetry. The boundary conditions of the electromagnetic fields on small-size nanowires (antenna effect) have a dramatic effect on the polarization properties of a Raman spectrum.

Angular dependence of coercivity with temperature in Co-based nanowires

Energy Technology Data Exchange (ETDEWEB)

Bran, C., E-mail: cristina.bran@icmm.csic.es [Institute of Materials Science of Madrid, CSIC, 28049 Madrid (Spain); Espejo, A.P. [Departamento de Física, Universidad de Santiago de Chile (USACH) and Center for the Development of Nanoscience and Nanotechnology (CEDENNA), Avenida Ecuador 3493, 9170124 Santiago (Chile); Palmero, E.M. [Institute of Materials Science of Madrid, CSIC, 28049 Madrid (Spain); Escrig, J. [Departamento de Física, Universidad de Santiago de Chile (USACH) and Center for the Development of Nanoscience and Nanotechnology (CEDENNA), Avenida Ecuador 3493, 9170124 Santiago (Chile); Vázquez, M. [Institute of Materials Science of Madrid, CSIC, 28049 Madrid (Spain)

2015-12-15

The magnetic behavior of arrays of Co and CoFe nanowire arrays has been measured in the temperature range between 100 and 300 K. We have paid particular attention to the angular dependence of magnetic properties on the applied magnetic field orientation. The experimental angular dependence of coercivity has been modeled according to micromagnetic analytical calculations, and we found that the propagation of a transversal domain wall mode gives the best fitting with experimental observations. That reversal mode holds in the whole measuring temperature range, for nanowires with different diameters and crystalline structure. Moreover, the quantitative strength of the magnetocrystalline anisotropy and its magnetization easy axis are determined to depend on the crystalline structure and nanowires diameter. The evolution of the magnetocrystalline anisotropy with temperature for nanowires with different composition gives rise to an opposite evolution of coercivity with increasing temperature: it decreases for CoFe while it increases for Co nanowire arrays.

In situ x-ray diffraction study on AgI nanowire arrays

International Nuclear Information System (INIS)

Wang Yinhai; Ye Changhui; Wang Guozhong; Zhang Lide; Liu Yanmei; Zhao Zhongyan

2003-01-01

The AgI nanowire arrays were prepared in the ordered porous alumina membrane by an electrochemical method. Transmission electron microscopy observation shows that the AgI nanowires are located in the channels of the alumina membrane. In situ x-ray diffractions show that the nanowire arrays possess hexagonal close-packed structure (β-AgI) at 293 K, orienting along the (002) plane, whereas at 473 K, the nanowire arrays possess a body-centered cubic structure (α-AgI), orienting along the (110) plane. The AgI nanowire arrays exhibit a negative thermal expansion property from 293 to 433 K, and a higher transition temperature from the β to α phase. We ascribe the negative thermal expansion behavior to the phase transition from the β to α phase, and the elevated transition temperature to the radial restriction by the channels of alumina membrane

Optical properties of Mg doped p-type GaN nanowires

Science.gov (United States)

Patsha, Avinash; Pandian, Ramanathaswamy; Dhara, S.; Tyagi, A. K.

2015-06-01

Mg doped p-type GaN nanowires are grown using chemical vapor deposition technique in vapor-liquid-solid (VLS) process. Morphological and structural studies confirm the VLS growth process of nanowires and wurtzite phase of GaN. We report the optical properties of Mg doped p-type GaN nanowires. Low temperature photoluminescence studies on as-grown and post-growth annealed samples reveal the successful incorporation of Mg dopants. The as-grwon and annealed samples show passivation and activation of Mg dopants, respectively, in GaN nanowires.

Understanding the vapor-liquid-solid growth and composition of ternary III-V nanowires and nanowire heterostructures

Science.gov (United States)

Dubrovskii, V. G.

2017-11-01

Based on the recent achievements in vapor-liquid-solid (VLS) synthesis, characterization and modeling of ternary III-V nanowires and axial heterostructures within such nanowires, we try to understand the major trends in their compositional evolution from a general theoretical perspective. Clearly, the VLS growth of ternary materials is much more complex than in standard vapor-solid epitaxy techniques, and even maintaining the necessary control over the composition of steady-state ternary nanowires is far from straightforward. On the other hand, VLS nanowires offer otherwise unattainable material combinations without introducing structural defects and hence are very promising for next-generation optoelectronic devices, in particular those integrated with a silicon electronic platform. In this review, we consider two main problems. First, we show how and by means of which parameters the steady-state composition of Au-catalyzed or self-catalyzed ternary III-V nanowires can be tuned to a desired value and why it is generally different from the vapor composition. Second, we present some experimental data and modeling results for the interfacial abruptness across axial nanowire heterostructures, both in Au-catalyzed and self-catalyzed VLS growth methods. Refined modeling allows us to formulate some general growth recipes for suppressing the unwanted reservoir effect in the droplet and sharpening the nanowire heterojunctions. We consider and refine two approaches developed to date, namely the regular crystallization model for a liquid alloy with a critical size of only one III-V pair at high supersaturations or classical binary nucleation theory with a macroscopic critical nucleus at modest supersaturations.

Shear-driven phase transformation in silicon nanowires.

Science.gov (United States)

Vincent, L; Djomani, D; Fakfakh, M; Renard, C; Belier, B; Bouchier, D; Patriarche, G

2018-03-23

We report on an unprecedented formation of allotrope heterostructured Si nanowires by plastic deformation based on applied radial compressive stresses inside a surrounding matrix. Si nanowires with a standard diamond structure (3C) undergo a phase transformation toward the hexagonal 2H-allotrope. The transformation is thermally activated above 500 °C and is clearly driven by a shear-stress relief occurring in parallel shear bands lying on {115} planes. We have studied the influence of temperature and axial orientation of nanowires. The observations are consistent with a martensitic phase transformation, but the finding leads to clear evidence of a different mechanism of deformation-induced phase transformation in Si nanowires with respect to their bulk counterpart. Our process provides a route to study shear-driven phase transformation at the nanoscale in Si.

ZnO Nanowires Synthesized by Vapor Phase Transport Deposition on Transparent Oxide Substrates

Directory of Open Access Journals (Sweden)

Taylor Curtis

2010-01-01

Full Text Available Abstract Zinc oxide nanowires have been synthesized without using metal catalyst seed layers on fluorine-doped tin oxide (FTO substrates by a modified vapor phase transport deposition process using a double-tube reactor. The unique reactor configuration creates a Zn-rich vapor environment that facilitates formation and growth of zinc oxide nanoparticles and wires (20–80 nm in diameter, up to 6 μm in length, density <40 nm apart at substrate temperatures down to 300°C. Electron microscopy and other characterization techniques show nanowires with distinct morphologies when grown under different conditions. The effect of reaction parameters including reaction time, temperature, and carrier gas flow rate on the size, morphology, crystalline structure, and density of ZnO nanowires has been investigated. The nanowires grown by this method have a diameter, length, and density appropriate for use in fabricating hybrid polymer/metal oxide nanostructure solar cells. For example, it is preferable to have nanowires no more than 40 nm apart to minimize exciton recombination in polymer solar cells.

High performance and durability of order-structured cathode catalyst layer based on TiO{sub 2}@PANI core-shell nanowire arrays

Energy Technology Data Exchange (ETDEWEB)

Chen, Ming; Wang, Meng; Yang, Zhaoyi [State Key Laboratory of Advanced Metallurgy, University of Science and Technology Beijing, 30 College Road, Beijing 100083 (China); School of Metallurgical and Ecological Engineering, University of Science and Technology Beijing, 30 College Road, Beijing 100083 (China); Wang, Xindong, E-mail: echem@ustb.edu.cn [State Key Laboratory of Advanced Metallurgy, University of Science and Technology Beijing, 30 College Road, Beijing 100083 (China); School of Metallurgical and Ecological Engineering, University of Science and Technology Beijing, 30 College Road, Beijing 100083 (China)

2017-06-01

Highlights: • TiO{sub 2}@PANI core-shell nanowire arrays were prepared and applied as catalyst support. • As-prepared Pt-TiO{sub 2}@PANI core-shell nanowire arrays were applied as order-structured cathode catalyst layer. • The novel cathode catalyst structure without Nafion{sup ®} ionomer enhance the performance and durability of PEMFC. - Abstract: In this paper, an order-structured cathode catalyst layer consisting of Pt-TiO{sub 2}@PANI core-shell nanowire arrays that in situ grown on commercial gas diffusion layer (GDL) are prepared and applied to membrane electrode assembly (MEA) of proton exchange membrane fuel cell (PEMFC). In order to prepare the TiO{sub 2}@PANI core-shell nanowire arrays with suitable porosity and prominent conductivity, the morphologies of the TiO{sub 2} nanoarray and electrochemical polymerization process of aniline are schematically investigated. The MEA with order-structured cathode catalyst layer is assembled in the single cell to evaluate the electrochemical performance and durability of PEMFC. As a result, the PEMFC with order-structured cathode catalyst layer shows higher peak power density (773.54 mW cm{sup −2}) than conventional PEMFC (699.30 mW cm{sup −2}). Electrochemically active surface area (ECSA) and charge transfer impedance (R{sub ct}) are measured before and after accelerated degradation test (ADT), and the corresponding experimental results indicate the novel cathode structure exhibits a better stability with respect to conventional cathode. The enhanced electrochemical performance and durability toward PEMFC can be ascribed to the order-structured cathode nanoarray structure with high specific surface area increases the utilization of catalyst and reduces the tortuosity of transport pathways, and the synergistic effect between TiO{sub 2}@PANI support and Pt nanoparticles promotes the high efficiency of electrochemical reaction and improves the stability of catalyst. This research provides a facile and

A scalable route to prepare core–shell structured ZnO@PEDOT nanowires and PEDOT nanotubes and their properties as electrode materials

Energy Technology Data Exchange (ETDEWEB)

Wang, Fang, E-mail: 270220943@qq.com [Key Laboratory of Carbon Fiber and Functional Polymers, Ministry of Education, Beijing University of Chemical Technology, Beijing 100029 (China); Zhang, Xianhong, E-mail: zxh_0507@126.com [Key Laboratory of Carbon Fiber and Functional Polymers, Ministry of Education, Beijing University of Chemical Technology, Beijing 100029 (China); Yang, Le, E-mail: 13613513412@126.com [Key Laboratory of Carbon Fiber and Functional Polymers, Ministry of Education, Beijing University of Chemical Technology, Beijing 100029 (China); Xu, Dehong, E-mail: dedehenry@qq.com [Key Laboratory of Carbon Fiber and Functional Polymers, Ministry of Education, Beijing University of Chemical Technology, Beijing 100029 (China); Ma, Yuhong, E-mail: mayh@mail.buct.edu.cn [Key Laboratory of Carbon Fiber and Functional Polymers, Ministry of Education, Beijing University of Chemical Technology, Beijing 100029 (China); Chen, Dong, E-mail: chendong@mail.buct.edu.cn [Key Laboratory of Carbon Fiber and Functional Polymers, Ministry of Education, Beijing University of Chemical Technology, Beijing 100029 (China); Wang, Li, E-mail: lwang@mail.buct.edu.cn [Key Laboratory of Carbon Fiber and Functional Polymers, Ministry of Education, Beijing University of Chemical Technology, Beijing 100029 (China); Zhao, Changwen, E-mail: zhaocw@mail.buct.edu.cn [Key Laboratory of Carbon Fiber and Functional Polymers, Ministry of Education, Beijing University of Chemical Technology, Beijing 100029 (China); State Key Laboratory of Chemical Resource Engineering, Beijing University of Chemical Technology, Beijing 100029 (China); Yang, Wantai, E-mail: yangwt@mail.buct.edu.cn [Key Laboratory of Carbon Fiber and Functional Polymers, Ministry of Education, Beijing University of Chemical Technology, Beijing 100029 (China); State Key Laboratory of Chemical Resource Engineering, Beijing University of Chemical Technology, Beijing 100029 (China)

2016-05-01

Highlights: • ZnO@PEDOT nanowires and PEDOT nanotubes synthesized by chemical oxidation polymerization. • By controlling the ratio of ZnO/EDOT, ZnO@PEDOT formed different structures. • The maximum specific capacitance of PEDOT can reach 101.34 F/g. - Abstract: A composite of a core–shell structured nanowires with ZnO as a core and conductive poly(3,4-ethylenedioxythiophene) (PEDOT) as a shell was prepared. At first, the hexagonal ZnO nanowires, with diameter of about 80–100 nm and length 4–5 μm, were fabricated by hydrothermal synthesis process. Then a thick layer of poly(trifluoroethyl methacrylate)-block-poly(sodium styrene sulfonate) (PTFEMA-b-PSSNa) was grafted from the surface of ZnO nanowires via atom transfer free radical polymerization. At last, with the ZnO@PTFEMA-b-PSSNa as a template and the PSSNa chain as the counterion dopant, PEDOT was precipitated onto the surface of the template to form the composite of ZnO@PEDOT/PSSNa. With the evaluation of the EDOT polymerization, the thickness of the PEDOT layer increased steadily. However, as the ratio of EDOT/ZnO was greater than 1:2, the ZnO nanowires templates were dissolved at last and then PEDOT particles were produced due to increasing of the acidity during the oxidation polymerization of EDOT. In this case, the product was the mixture of the nanotubes and particles of PEDOT/PPSNa. The electrochemical capacitances of the composites with different structures were investigated with cyclic voltammetry, galvanostatic charge–discharge and electrochemical impedance spectroscopy techniques with three-electrode cell configuration. The maximum specific capacitance of ZnO@PEDOT electrode can reach 101.34 F/g at 20 mV/s.

Synthesis of Oxidation-Resistant Cupronickel Nanowires for Transparent Conducting Nanowire Networks

Energy Technology Data Exchange (ETDEWEB)

Rathmall, Aaron [Duke University; Nguyen, Minh [Duke University; Wiley, Benjamin J [Duke University

2012-01-01

Nanowires of copper can be coated from liquids to create flexible, transparent conducting films that can potentially replace the dominant transparent conductor, indium tin oxide, in displays, solar cells, organic light-emitting diodes, and electrochromic windows. One issue with these nanowire films is that copper is prone to oxidation. It was hypothesized that the resistance to oxidation could be improved by coating copper nanowires with nickel. This work demonstrates a method for synthesizing copper nanowires with nickel shells as well as the properties of cupronickel nanowires in transparent conducting films. Time- and temperature-dependent sheet resistance measurements indicate that the sheet resistance of copper and silver nanowire films will double after 3 and 36 months at room temperature, respectively. In contrast, the sheet resistance of cupronickel nanowires containing 20 mol % nickel will double in about 400 years. Coating copper nanowires to a ratio of 2:1 Cu:Ni gave them a neutral gray color, making them more suitable for use in displays and electrochromic windows. These properties, and the fact that copper and nickel are 1000 times more abundant than indium or silver, make cupronickel nanowires a promising alternative for the sustainable, efficient production of transparent conductors.

Structural and elastic properties of InN nanowires

Energy Technology Data Exchange (ETDEWEB)

Quddus, Ehtesham B.; Wilson, Alina; Liu, Jie; Cai, Zhihua; Veereddy, Deepak; Tao, Xinyong; Li, Xiaodong; Koley, Goutam [Department of Electrical Engineering, University of South Carolina, Columbia, SC 29208 (United States); Webb, Richard A. [Department of Physics and Astronomy and USC Nanocenter, University of South Carolina, Columbia, SC 29208 (United States)

2012-04-15

Structural and elastic properties of InN nanowires (NWs) have been investigated. It was observed that the NWs bend spontaneously or upon meeting an obstacle in their growth path at angles that are multiples of 30 . Lithographically patterned trenches and barriers were found to influence the growth direction of the NWs, which depending on the angle of incidence, grew along the barrier or got deflected from it. Young's modulus of InN NWs, measured by three point bending method using a NW suspended across a trench, was found to be 266 GPa, which is in between the moduli of bulk and thin film InN. Overall, the InN NW properties were found to be very suitable for applications in nanoelectromechanical systems (NEMS) and sensors. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Diameter Tuning of β-Ga2O3 Nanowires Using Chemical Vapor Deposition Technique.

Science.gov (United States)

Kumar, Mukesh; Kumar, Vikram; Singh, R

2017-12-01

Diameter tuning of [Formula: see text]-Ga 2 O 3 nanowires using chemical vapor deposition technique have been investigated under various experimental conditions. Diameter of root grown [Formula: see text]-Ga 2 O 3 nanowires having monoclinic crystal structure is tuned by varying separation distance between metal source and substrate. Effect of gas flow rate and mixer ratio on the morphology and diameter of nanowires has been studied. Nanowire diameter depends on growth temperature, and it is independent of catalyst nanoparticle size at higher growth temperature (850-900 °C) as compared to lower growth temperature (800 °C). These nanowires show changes in structural strain value with change in diameter. Band-gap of nanowires increases with decrease in the diameter.

Molecular dynamics simulation of thermal conductivities of superlattice nanowires

Institute of Scientific and Technical Information of China (English)

YANG; Juekuan(杨决宽); CHEN; Yunfei(陈云飞); YAN; Jingping(颜景平)

2003-01-01

Nonequilibrium molecular dynamics simulations were carried out to investigate heat transfer in superlattice nanowires. Results show that for fixed period length superlattice nanowires, the ratio of the total interfacial thermal resistance to the total thermal resistance and the effective thermal conductivities are invariant with the changes in interface numbers. Increasing the period length leads to an increase in the average interfacial thermal resistance, which indicates that the interfacial thermal resistance depends not only on the materials that constitute the alternating segments of superlattice nanowires, but also on the lattice strain throughout the segments. The modification of the lattice structure due to the lattice mismatch should be taken into account in the acoustic mismatch model. Simulation results also demonstrated the size confinement effect on the thermal conductivities for low dimensional structures, i.e. the thermal conductivities and the interfacial thermal resistance increase as the nanowire cross-sectional area increases.

Flexible integration of free-standing nanowires into silicon photonics.

Science.gov (United States)

Chen, Bigeng; Wu, Hao; Xin, Chenguang; Dai, Daoxin; Tong, Limin

2017-06-14

Silicon photonics has been developed successfully with a top-down fabrication technique to enable large-scale photonic integrated circuits with high reproducibility, but is limited intrinsically by the material capability for active or nonlinear applications. On the other hand, free-standing nanowires synthesized via a bottom-up growth present great material diversity and structural uniformity, but precisely assembling free-standing nanowires for on-demand photonic functionality remains a great challenge. Here we report hybrid integration of free-standing nanowires into silicon photonics with high flexibility by coupling free-standing nanowires onto target silicon waveguides that are simultaneously used for precise positioning. Coupling efficiency between a free-standing nanowire and a silicon waveguide is up to ~97% in the telecommunication band. A hybrid nonlinear-free-standing nanowires-silicon waveguides Mach-Zehnder interferometer and a racetrack resonator for significantly enhanced optical modulation are experimentally demonstrated, as well as hybrid active-free-standing nanowires-silicon waveguides circuits for light generation. These results suggest an alternative approach to flexible multifunctional on-chip nanophotonic devices.Precisely assembling free-standing nanowires for on-demand photonic functionality remains a challenge. Here, Chen et al. integrate free-standing nanowires into silicon waveguides and show all-optical modulation and light generation on silicon photonic chips.

Optimizing the top profile of a nanowire for maximum forward emission

Institute of Scientific and Technical Information of China (English)

Wang Dong-Lin; Yu Zhong-Yuan; Liu Yu-Min; Guo Xiao-Tao; Cao Gui; Feng Hao

2011-01-01

The optimal top structure of a nanowire quantum emitter single photon source is significant in improving performance.Based on the axial symmetry of a cylindrical nanowire,this paper optimizes the top profile of a nanowire for the maximum forward emission by combining the geometry projection method and the finite element method.The results indicate that the nanowire with a cambered top has the stronger emission in the forward direction,which is helpful to improve the photon collection efficiency.

Superwetting nanowire membranes for selective absorption.

Science.gov (United States)

Yuan, Jikang; Liu, Xiaogang; Akbulut, Ozge; Hu, Junqing; Suib, Steven L; Kong, Jing; Stellacci, Francesco

2008-06-01

The construction of nanoporous membranes is of great technological importance for various applications, including catalyst supports, filters for biomolecule purification, environmental remediation and seawater desalination. A major challenge is the scalable fabrication of membranes with the desirable combination of good thermal stability, high selectivity and excellent recyclability. Here we present a self-assembly method for constructing thermally stable, free-standing nanowire membranes that exhibit controlled wetting behaviour ranging from superhydrophilic to superhydrophobic. These membranes can selectively absorb oils up to 20 times the material's weight in preference to water, through a combination of superhydrophobicity and capillary action. Moreover, the nanowires that form the membrane structure can be re-suspended in solutions and subsequently re-form the original paper-like morphology over many cycles. Our results suggest an innovative material that should find practical applications in the removal of organics, particularly in the field of oil spill cleanup.

Nano-soldering of magnetically aligned three-dimensional nanowire networks

International Nuclear Information System (INIS)

Gao Fan; Gu Zhiyong

2010-01-01

It is extremely challenging to fabricate 3D integrated nanostructures and hybrid nanoelectronic devices. In this paper, we report a simple and efficient method to simultaneously assemble and solder nanowires into ordered 3D and electrically conductive nanowire networks. Nano-solders such as tin were fabricated onto both ends of multi-segmented nanowires by a template-assisted electrodeposition method. These nanowires were then self-assembled and soldered into large-scale 3D network structures by magnetic field assisted assembly in a liquid medium with a high boiling point. The formation of junctions/interconnects between the nanowires and the scale of the assembly were dependent on the solder reflow temperature and the strength of the magnetic field. The size of the assembled nanowire networks ranged from tens of microns to millimeters. The electrical characteristics of the 3D nanowire networks were measured by regular current-voltage (I-V) measurements using a probe station with micropositioners. Nano-solders, when combined with assembling techniques, can be used to efficiently connect and join nanowires with low contact resistance, which are very well suited for sensor integration as well as nanoelectronic device fabrication.

Controlled Synthesis of Nanowire Assemblies by Ion-Track Template Electrodeposition

OpenAIRE

Rauber, Markus

2012-01-01

The development of methods that allow the organization of nanostructures into integrated arrangements is crucial to realizing applications based on nanowires. Although various such methods exist, the direct synthesis of complex nanowire structures is one of the most suitable approaches for translating a large quantity of nanostructures into micro-/macroscale dimensions. In particular, three-dimensional (3-D) nanowire assemblies with a high integration level and adjustable connecti...

Localized synthesis, assembly and integration of silicon nanowires

Science.gov (United States)

Englander, Ongi

Localized synthesis, assembly and integration of one-dimensional silicon nanowires with MEMS structures is demonstrated and characterized in terms of local synthesis processes, electric-field assisted self-assembly, and a proof-of-concept nanoelectromechanical system (HEMS) demonstration. Emphasis is placed on the ease of integration, process control strategies, characterization techniques and the pursuit of integrated devices. A top-down followed by a bottom-up integration approach is utilized. Simple MEMS heater structures are utilized as the microscale platforms for the localized, bottom-up synthesis of one-dimensional nanostructures. Localized heating confines the high temperature region permitting only localized nanostructure synthesis and allowing the surroundings to remain at room temperature thus enabling CMOS compatible post-processing. The vapor-liquid-solid (VLS) process in the presence of a catalytic nanoparticle, a vapor phase reactant, and a specific temperature environment is successfully employed locally. Experimentally, a 5nm thick gold-palladium layer is used as the catalyst while silane is the vapor phase reactant. The current-voltage behavior of the MEMS structures can be correlated to the approximate temperature range required for the VLS reaction to take place. Silicon nanowires averaging 45nm in diameter and up to 29mum in length synthesized at growth rates of up to 1.5mum/min result. By placing two MEMS structures in close proximity, 4--10mum apart, localized silicon nanowire growth can be used to link together MEMS structures to yield a two-terminal, self-assembled micro-to-nano system. Here, one MEMS structure is designated as the hot growth structure while a nearby structure is designated as the cold secondary structure, whose role is to provide a natural stopping point for the VLS reaction. The application of a localized electric-field, 5 to 13V/mum in strength, during the synthesis process, has been shown to improve nanowire

Current-voltage characteristics of the semiconductor nanowires under the metal-semiconductor-metal structure

Science.gov (United States)

Wen, Jing; Zhang, Xitian; Gao, Hong; Wang, Mingjiao

2013-12-01

We present a method to calculate the I-V characteristics of semiconductor nanowires under the metal-semiconductor-metal (MSM) structure. The carrier concentration as an important parameter is introduced into the expression of the current. The subband structure of the nanowire has been considered for associating it with the position of the Fermi level and circumventing the uncertainties of the contact areas in the contacts. The tunneling and thermionic emission currents in the two Schottky barriers at the two metal-semiconductor contacts are discussed. We find that the two barriers have different influences on the I-V characteristics of the MSM structure, one of which under the forward bias plays the role of threshold voltage if its barrier height is large and the applied voltage is small, and the other under the reverse bias controls the shapes of I-V curves. Our calculations show that the shapes of the I-V curves for the MSM structure are mainly determined by the barrier heights of the contacts and the carrier concentration. The nearly identical I-V characteristics can be obtained by using different values of the barrier heights and carrier concentration, which means that the contact type conversion can be ascribed not only to the changes of the barrier heights but also that of the carrier concentration. We also discuss the mechanisms of the ohmic-Schottky conversions and clarify the ambiguity in the literature. The possibility about the variation of the carrier concentration under the applied fields has been confirmed by experimental results.

MOCVD growth and structural characterization of In-Sb-Te nanowires

International Nuclear Information System (INIS)

Selmo, S.; Fanciulli, M.; Cecchi, S.; Cecchini, R.; Wiemer, C.; Longo, M.; Rotunno, E.; Lazzarini, L.

2016-01-01

In this work, the self-assembly of In 3 Sb 1 Te 2 and In-doped Sb 4 Te 1 nanowires (NWs) for phase change memories application was achieved by metal organic chemical vapor deposition, coupled with vapor-liquid-solid (VLS) mechanism, catalyzed by Au nanoparticles. Single crystal In 3 Sb 1 Te 2 and In-doped Sb 4 Te 1 NWs were obtained for different reactor pressures at 325 C. The parameters influencing the NW self-assembly were studied and the compositional, morphological, and structural analysis of the grown structures was performed, also comparing the effect of the used substrate (crystalline Si and SiO 2 ). In both cases, NWs of several micrometer in length and with diameters as small as 15 nm were obtained. (copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Direct electrodeposition of metal nanowires on electrode surface

International Nuclear Information System (INIS)

Gambirasi, Arianna; Cattarin, Sandro; Musiani, Marco; Vazquez-Gomez, Lourdes; Verlato, Enrico

2011-01-01

A method for decorating the surface of disk electrodes with metal nanowires is presented. Cu and Ni nanowires with diameters from 1.0 μm to 0.2 μm are directly deposited on the electrode surface using a polycarbonate membrane filter template maintained in contact with the metal substrate by the soft homogeneous pressure of a sponge soaked with electrolyte. The morphologic and structural properties of the deposit are characterized by scanning electron microscopy (SEM) and electron backscatter diffraction (EBSD). The latter shows that the head of nanowires with diameter of 0.4 μm is ordinarily polycrystalline, and that of nanowires with diameter of 0.2 μm is almost always monocrystalline for Cu and frequently also for Ni. Cyclic voltammetries and impedance investigations recorded in alkaline solutions at representative Ni electrodes decorated with nanowires provide consistent values of roughness factor, in the range 20-25.

VLS-grown diffusion doped ZnO nanowires and their luminescence properties

International Nuclear Information System (INIS)

Roy, Pushan Guha; Dutta, Amartya; Das, Arpita; Bhattacharyya, Anirban; Sen, Sayantani; Pramanik, Pallabi

2015-01-01

Zinc Oxide (ZnO) nanowires were deposited by vapor–liquid–solid (VLS) method on to aluminum doped ZnO (AZO) thin films grown by sol-gel technique. For various device applications, current injection into such nanowires is critical. This is expected to be more efficient for ZnO nanowires deposited on to AZO compared to those deposited on to a foreign substrate such as silicon. In this work we compare the morphological and optical properties of nanowires grown on AZO with those grown under similar conditions on silicon (Si) wafers. For nanowires grown on silicon, diameters around 44 nm with heights around 2.2 μm were obtained. For the growth on to AZO, the diameters were around 90 nm while the heights were around 520 nm. Room temperature photoluminescence (RT-PL) measurements show improved near band-edge emission for nanowires grown on to AZO, indicating higher material quality. This is further established by low temperature photoluminescence (LT-PL) measurements where excitonic transitions with width as small as 14 meV have been obtained at 4 K for such structures. Electron energy loss spectroscopy (EELS) studies indicate the presence of Al in the nanowires, indicating a new technique for introduction of dopants into these structures. These results indicate that ZnO nanowires on sol-gel grown AZO thin films show promise in the development of various optoelectronic devices. (paper)

Looking into meta-atoms of plasmonic nanowire metamaterial

KAUST Repository

Tsai, Kuntong

2014-09-10

Nanowire-based plasmonic metamaterials exhibit many intriguing properties related to the hyperbolic dispersion, negative refraction, epsilon-near-zero behavior, strong Purcell effect, and nonlinearities. We have experimentally and numerically studied the electromagnetic modes of individual nanowires (meta-atoms) forming the metamaterial. High-resolution, scattering-type near-field optical microscopy has been used to visualize the intensity and phase of the modes. Numerical and analytical modeling of the mode structure is in agreement with the experimental observations and indicates the presence of the nonlocal response associated with cylindrical surface plasmons of nanowires.

Methods of fabricating nanostructures and nanowires and devices fabricated therefrom

Energy Technology Data Exchange (ETDEWEB)

Majumdar, Arun; Shakouri, Ali; Sands, Timothy D.; Yang, Peidong; Mao, Samuel S.; Russo, Richard E.; Feick, Henning; Weber, Eicke R.; Kind, Hannes; Huang, Michael; Yan, Haoquan; Wu, Yiying; Fan, Rong

2018-01-30

One-dimensional nanostructures having uniform diameters of less than approximately 200 nm. These inventive nanostructures, which we refer to as "nanowires", include single-crystalline homostructures as well as heterostructures of at least two single-crystalline materials having different chemical compositions. Because single-crystalline materials are used to form the heterostructure, the resultant heterostructure will be single-crystalline as well. The nanowire heterostructures are generally based on a semiconducting wire wherein the doping and composition are controlled in either the longitudinal or radial directions, or in both directions, to yield a wire that comprises different materials. Examples of resulting nanowire heterostructures include a longitudinal heterostructure nanowire (LOHN) and a coaxial heterostructure nanowire (COHN).

Nanowire Lasers

Directory of Open Access Journals (Sweden)

Couteau C.

2015-05-01

Full Text Available We review principles and trends in the use of semiconductor nanowires as gain media for stimulated emission and lasing. Semiconductor nanowires have recently been widely studied for use in integrated optoelectronic devices, such as light-emitting diodes (LEDs, solar cells, and transistors. Intensive research has also been conducted in the use of nanowires for subwavelength laser systems that take advantage of their quasione- dimensional (1D nature, flexibility in material choice and combination, and intrinsic optoelectronic properties. First, we provide an overview on using quasi-1D nanowire systems to realize subwavelength lasers with efficient, directional, and low-threshold emission. We then describe the state of the art for nanowire lasers in terms of materials, geometry, andwavelength tunability.Next,we present the basics of lasing in semiconductor nanowires, define the key parameters for stimulated emission, and introduce the properties of nanowires. We then review advanced nanowire laser designs from the literature. Finally, we present interesting perspectives for low-threshold nanoscale light sources and optical interconnects. We intend to illustrate the potential of nanolasers inmany applications, such as nanophotonic devices that integrate electronics and photonics for next-generation optoelectronic devices. For instance, these building blocks for nanoscale photonics can be used for data storage and biomedical applications when coupled to on-chip characterization tools. These nanoscale monochromatic laser light sources promise breakthroughs in nanophotonics, as they can operate at room temperature, can potentially be electrically driven, and can yield a better understanding of intrinsic nanomaterial properties and surface-state effects in lowdimensional semiconductor systems.

Growth of Ag-seeded III-V Nanowires and TEM Characterization

DEFF Research Database (Denmark)

Lindberg, Anna Helmi Caroline

appropriate, the density and the vertical yield were obtained. The crystal structures for the grown nanowires have been investigated with TEM.We have also performed additional growths to further understand exactly how the nanowire growth proceeds as well as to understand the limitations of using Ag as a seed......This thesis deals with growth and characterization of GaAs and InAs nanowires. Today Au nanoparticle-seeding together with self-catalyzing are the dominating techniques to grow III-V nanowires with molecular beam epitaxy. In this thesis we instead investigate the possibility to use Ag as seed...... particle for growth of GaAs and InAs nanowires. The aim with the experiments performed has been to conclude whether Ag can be used to nucleate and grow nanowires on III-V substrates with molecular beam epitaxy. To investigate this we have performed growths of GaAs nanowires on GaAs(111)B and GaAs(100...

Growth and properties of low-dimensional III-V semiconductor nanowire heterostructures

Energy Technology Data Exchange (ETDEWEB)

Heiss, Martin

2010-08-25

In this work the properties of GaAs nanowire based heterostructures are investigated. The nanowires and their heterostructures are synthesized with Molecular Beam Epitaxy. The optical and structural properties are characterized by means of low temperature confocal micro-photoluminescence spectroscopy and Transmission Electron Microscopy. Molecular Beam Epitaxy is a versatile technique that allows to switch from radial to axial growth in order to cap the nanowires by an epitaxial prismatic AlGaAs/GaAs heterostructure. This can passivate surface states and improve the optical properties. The effect of such a passivation layer is studied by quantitative comparison of the diameter dependence of photoluminescence in passivated and unpassivated nanowires. The passivation is an important prerequisite for more complex axial heterostructures. Evidence for radial confinement effects is found in passivated nanowires with core diameters smaller than 70 nm. Furthermore, the polarization dependence of light absorption and emission is investigated. Two different types of axial heterostructures are studied that have the potential to further enhance the functionality of such nanowires. In a first step, the possibility of growth of axial InGaAs heterostructure in the Au-free Molecular Beam Epitaxy growth regime is investigated. Suitable growth conditions are identified and the growth temperature window for both GaAs and InGaAs nanowires is determined. At the optimum growth temperature for GaAs nanowires, the incorporation of indium in the structure is limited to a few percent. It is shown that by lowering the growth temperature the indium concentration in the structure can be increased up to 20%. The optical properties of the synthesized axial heterostructures are investigated by means of micro-photoluminescence spectroscopy and Transmission Electron Microscopy. The second type of axial nanowire heterostructure investigated in the present work is characterized by a change in crystal

Photoluminescence study of as-grown vertically standing wurtzite InP nanowire ensembles.

Science.gov (United States)

Iqbal, Azhar; Beech, Jason P; Anttu, Nicklas; Pistol, Mats-Erik; Samuelson, Lars; Borgström, Magnus T; Yartsev, Arkady

2013-03-22

We demonstrate a method that enables the study of photoluminescence of as-grown nanowires on a native substrate by non-destructively suppressing the contribution of substrate photoluminescence. This is achieved by using polarized photo-excitation and photoluminescence and by making an appropriate choice of incident angle of both excitation beam and photoluminescence collection direction. Using TE-polarized excitation at a wavelength of 488 nm at an incident angle of ∼70° we suppress the InP substrate photoluminescence relative to that of the InP nanowires by about 80 times. Consequently, the photoluminescence originating from the nanowires becomes comparable to and easily distinguishable from the substrate photoluminescence. The measured photoluminescence, which peaks at photon energies of ∼1.35 eV and ∼1.49 eV, corresponds to the InP substrate with zinc-blende crystal structure and to the InP nanowires with wurtzite crystal structure, respectively. The photoluminescence quantum yield of the nanowires was found to be ∼20 times lower than that of the InP substrate. The nanowires, grown vertically in a random ensemble, neither exhibit substantial emission polarization selectivity to the axis of the nanowires nor follow excitation polarization preferences observed previously for a single nanowire.

Magnetic properties and crystalline structures of Fe{sub 21}Ni{sub 79} nanowire arrays

Energy Technology Data Exchange (ETDEWEB)

Lee, Kwan Hyi; Lee, Woo Young; Lee, Hwa Young; Jeung, Won Young [Korea Institute of Science and Technology, Seoul (Korea, Republic of)

2002-04-01

Fe{sub 21}Ni{sub 79} nanowire arrays have been fabricated by the electroforming method using AAO (anodic aluminum oxide) as a template, which was prepared by anodizing the pure aluminum foil. According to the magnetic property of Fe{sub 21}Ni{sub 79} nanowire prepared, it was found to have the coercivity more than 1 kOe due to the shape anisotropy and squareness (Mr/Ms) very close to 1. Especially, it could be noted that Fe{sub 21}Ni{sub 79} nanowire showed the preferred crystallographic orientation of (220). Annealing treatment of Fe{sub 21}Ni{sub 79} nanowire at 500 degree C resulted in the enhancement of coercivity by 18% while the squareness was not varied by annealing treatment. However, the random orientation of Fe{sub 21}Ni{sub 79} disk and the preferred orientation of nanowire arrays were maintained without respect to the annealing treatment up to 500 degree C.

Electrochemical Synthesis of Mesoporous CoPt Nanowires for Methanol Oxidation

Directory of Open Access Journals (Sweden)

Albert Serrà

2014-03-01

Full Text Available A new electrochemical method to synthesize mesoporous nanowires of alloys has been developed. Electrochemical deposition in ionic liquid-in-water (IL/W microemulsion has been successful to grow mesoporous CoPt nanowires in the interior of polycarbonate membranes. The viscosity of the medium was high, but it did not avoid the entrance of the microemulsion in the interior of the membrane’s channels. The structure of the IL/W microemulsions, with droplets of ionic liquid (4 nm average diameter dispersed in CoPt aqueous solution, defined the structure of the nanowires, with pores of a few nanometers, because CoPt alloy deposited only from the aqueous component of the microemulsion. The electrodeposition in IL/W microemulsion allows obtaining mesoporous structures in which the small pores must correspond to the size of the droplets of the electrolytic aqueous component of the microemulsion. The IL main phase is like a template for the confined electrodeposition. The comparison of the electrocatalytic behaviours towards methanol oxidation of mesoporous and compact CoPt nanowires of the same composition, demonstrated the porosity of the material. For the same material mass, the CoPt mesoporous nanowires present a surface area 16 times greater than compact ones, and comparable to that observed for commercial carbon-supported platinum nanoparticles.

Structure, interface abruptness and strain relaxation in self-assisted grown InAs/GaAs nanowires

Energy Technology Data Exchange (ETDEWEB)

Frigeri, Cesare, E-mail: frigeri@imem.cnr.it [CNR-IMEM Institute, Parma (Italy); Scarpellini, David [L–NESS and Dept. Materials Science, University of Milano Bicocca, Milano (Italy); Department of Industrial Engineering University of Rome Tor Vergata, Rome (Italy); Fedorov, Alexey [LNESS and CNR-IFN, Como (Italy); Bietti, Sergio; Somaschini, Claudio [L–NESS and Dept. Materials Science, University of Milano Bicocca, Milano (Italy); Grillo, Vincenzo [CNR-IMEM Institute, Parma (Italy); CNR-S3-NANO Center, Modena (Italy); Esposito, Luca; Salvalaglio, Marco; Marzegalli, Anna; Montalenti, Francesco [L–NESS and Dept. Materials Science, University of Milano Bicocca, Milano (Italy); Sanguinetti, Stefano [L–NESS and Dept. Materials Science, University of Milano Bicocca, Milano (Italy); LNESS and CNR-IFN, Como (Italy)

2017-02-15

Highlights: • We study 2 critical issues (interface abruptness and strain release) in InAs/GaAs NWs. • Structural and chemical interface sharpness ≤1.5 nm, better than in previous reports. • Simultaneous elastic and plastic relaxation is shown that agrees with FEM simulations. • Structural, chemical and strain release investigations were performed by STEM. • New MBE self-seeded method whereby InAs is grown by splitting In and As depositions. - Abstract: The structure, interface abruptness and strain relaxation in InAs/GaAs nanowires grown by molecular beam epitaxy in the Ga self-catalysed mode on (111) Si have been investigated by transmission electron microscopy. The nanowires had the zincblende phase. The InAs/GaAs interface was atomically and chemically sharp with a width around 1.5 nm, i.e. significantly smaller than previously reported values. This was achieved by the consumption of the Ga droplet and formation of a flat top facet of the GaAs followed by the growth of InAs by splitting the depositions of In and As. Both elastic and plastic strain relaxation took place simultaneously. Experimental TEM results about strain relaxation very well agree with linear elasticity theory calculations by the finite element methods.

Structure, interface abruptness and strain relaxation in self-assisted grown InAs/GaAs nanowires

International Nuclear Information System (INIS)

Frigeri, Cesare; Scarpellini, David; Fedorov, Alexey; Bietti, Sergio; Somaschini, Claudio; Grillo, Vincenzo; Esposito, Luca; Salvalaglio, Marco; Marzegalli, Anna; Montalenti, Francesco; Sanguinetti, Stefano

2017-01-01

Highlights: • We study 2 critical issues (interface abruptness and strain release) in InAs/GaAs NWs. • Structural and chemical interface sharpness ≤1.5 nm, better than in previous reports. • Simultaneous elastic and plastic relaxation is shown that agrees with FEM simulations. • Structural, chemical and strain release investigations were performed by STEM. • New MBE self-seeded method whereby InAs is grown by splitting In and As depositions. - Abstract: The structure, interface abruptness and strain relaxation in InAs/GaAs nanowires grown by molecular beam epitaxy in the Ga self-catalysed mode on (111) Si have been investigated by transmission electron microscopy. The nanowires had the zincblende phase. The InAs/GaAs interface was atomically and chemically sharp with a width around 1.5 nm, i.e. significantly smaller than previously reported values. This was achieved by the consumption of the Ga droplet and formation of a flat top facet of the GaAs followed by the growth of InAs by splitting the depositions of In and As. Both elastic and plastic strain relaxation took place simultaneously. Experimental TEM results about strain relaxation very well agree with linear elasticity theory calculations by the finite element methods.

Fabrication of isolated platinum nanowire gratings and nanoparticles on silica substrate by femtosecond laser irradiation

Energy Technology Data Exchange (ETDEWEB)

Nakajima, Yasutaka [School of Integrated Design Engineering, Keio University, 3-14-1, Hiyoshi, Kohoku-ku, Yokohama 223- 8522 (Japan); Nedyalkov, Nikolay [Institute of Electronics, Bulgarian Academy of Sciences, Tzarigradsko shouse 72, Sofia 1784 (Bulgaria); Department of Electronics and Electrical Engineering, Keio University, 3-14-1, Hiyoshi, Kohoku-ku, Yokohama, 223-8522 (Japan); Takami, Akihiro [School of Integrated Design Engineering, Keio University, 3-14-1, Hiyoshi, Kohoku-ku, Yokohama 223- 8522 (Japan); Terakawa, Mitsuhiro, E-mail: terakawa@elec.keio.ac.jp [School of Integrated Design Engineering, Keio University, 3-14-1, Hiyoshi, Kohoku-ku, Yokohama 223- 8522 (Japan); Department of Electronics and Electrical Engineering, Keio University, 3-14-1, Hiyoshi, Kohoku-ku, Yokohama, 223-8522 (Japan)

2017-02-01

Highlights: • Formation of HSFL with periodicities shorter than 100 nm. • Structural evolution from platinum nanowire gratings to platinum nanoparticles only by increasing the number of pulses. • Melting and fragmentation of the nanowire gratings would play a key role in structural evolution. - Abstract: We demonstrate the fabrication of isolated platinum nanostructures on a silica substrate by using femtosecond laser. Nanowire gratings which have short periodicities of approximately 50 nm were formed by irradiating a platinum thin film deposited on a fused silica substrate with 800-nm wavelength femtosecond laser pulses. The structural evolution from the nanowire gratings to nanoparticles was observed only by increasing the number of pulses. The periodicities or diameters of the structures showed good uniformity. Scanning electron microscopy of the surfaces and theoretical calculation of temperature profile using a two-temperature model revealed that the structural evolution can be attributed to the fragmentation of the formed nanowires. The presented method provides a simple and high-throughput technique for fabricating both metal nanowire gratings and nanoparticles, which have the potential to be used for the fabrication of optical, electrical and biomedical devices.

Nanoconstruction by welding individual metallic nanowires together using nanoscale solder

International Nuclear Information System (INIS)

Peng, Y; Inkson, B J; Cullis, A G

2010-01-01

This work presents a new bottom-up nanowelding technique enabling building blocks to be assembled and welded together into complex 3D nanostructures using nanovolumes of metal solder. The building blocks of gold nanowires, (Co 72 Pt 28 /Pt) n multilayer nanowires, and nanosolder Sn 99 Au 1 alloy nanowires were successfully fabricated by a template technique. Individual metallic nanowires were picked up and assembled together. Conductive nanocircuits were then welded together using similar or dissimilar nanosolder material. At the weld sites, nanoscale volumes of a chosen metal are deposited using nanosolder of a sacrificial nanowire, which ensures that the nanoobjects to be bonded retain their structural integrity. The whole nanowelding process is clean, controllable and reliable, and ensures both mechanically strong and electrically conductive contacts.

A rapid hydrothermal synthesis of rutile SnO2 nanowires

International Nuclear Information System (INIS)

Lupan, O.; Chow, L.; Chai, G.; Schulte, A.; Park, S.; Heinrich, H.

2009-01-01

Tin oxide (SnO 2 ) nanowires with rutile structure have been synthesized by a facile hydrothermal method at 98 deg. C. The morphologies and structural properties of the as-grown nanowires/nanoneedles were characterized by scanning electron microscopy (SEM), transmission electron microscopy (TEM), selected area electron diffraction, X-ray diffraction and Raman spectroscopy. The SEM images reveal tetragonal nanowires of about 10-100 μm in length and 50-100 nm in radius. The Raman scattering peaks indicate a typical rutile phase of the SnO 2 . The effects of molar ratio of SnCl 4 to NH 4 OH on the growth mechanism are discussed

Combustion synthesis of AlB2-Al2O3 composite powders with AlB2 nanowire structures

Science.gov (United States)

Yang, Pan; Xiao, Guoqing; Ding, Donghai; Ren, Yun; Yang, Shoulei; Lv, Lihua; Hou, Xing

2018-05-01

Using of Al and B2O3 powders as starting materials, and Mg-Al alloy as additives, AlB2-Al2O3 composite powders with AlB2 nanowire structures were successfully fabricated via combustion synthesis method in Ar atmosphere at a pressure of 1.5 MPa. The effect of different amount of Mg-Al alloy on the phase compositions and morphology of the combustion products was investigated. The results revealed that AlB2 and Al2O3 increased, whereas Al decreased with the content of Mg-Al alloy increasing. The impurities MgAl2O4 and AlB12 would exist in the sample with adding of 18 wt% Mg-Al alloy. Interestingly, FESEM/TEM/EDS results showed that AlB2 nanowires were observed in the products when the content of Mg-Al alloy is 6 wt% and 12 wt%. The more AlB2 nanowires can be found as the content of Mg-Al alloy increased. And the yield of AlB2 nanowires with the diameter of about 200 nanometers (nm) and the length up to several tens of micrometers (μm) in the combustion product is highest when the content of Mg-Al alloy is 12 wt%. The vapor, such as Mg-Al (g), B2O2 (g), AlO (g) and Al2O (g), produced during the process of combustion synthesis, reacted with each other to yield AlB2 nanowires by vapor-solid (VS) mechanism and the corresponding model was also proposed.

MOCVD growth and structural characterization of In-Sb-Te nanowires

Energy Technology Data Exchange (ETDEWEB)

Selmo, S.; Fanciulli, M. [Laboratorio MDM, IMM-CNR, Unita di Agrate Brianza (Italy); Dipartimento di Scienza dei Materiali, University of Milano Bicocca, Milano (Italy); Cecchi, S.; Cecchini, R.; Wiemer, C.; Longo, M. [Laboratorio MDM, IMM-CNR, Unita di Agrate Brianza (Italy); Rotunno, E.; Lazzarini, L. [IMEM-CNR, Parma (Italy)

2016-02-15

In this work, the self-assembly of In{sub 3}Sb{sub 1}Te{sub 2} and In-doped Sb{sub 4}Te{sub 1} nanowires (NWs) for phase change memories application was achieved by metal organic chemical vapor deposition, coupled with vapor-liquid-solid (VLS) mechanism, catalyzed by Au nanoparticles. Single crystal In{sub 3}Sb{sub 1}Te{sub 2} and In-doped Sb{sub 4}Te{sub 1} NWs were obtained for different reactor pressures at 325 C. The parameters influencing the NW self-assembly were studied and the compositional, morphological, and structural analysis of the grown structures was performed, also comparing the effect of the used substrate (crystalline Si and SiO{sub 2}). In both cases, NWs of several micrometer in length and with diameters as small as 15 nm were obtained. (copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Field Emission of ITO-Coated Vertically Aligned Nanowire Array.

KAUST Repository

Lee, Changhwa

2010-04-29

An indium tin oxide (ITO)-coated vertically aligned nanowire array is fabricated, and the field emission characteristics of the nanowire array are investigated. An array of vertically aligned nanowires is considered an ideal structure for a field emitter because of its parallel orientation to the applied electric field. In this letter, a vertically aligned nanowire array is fabricated by modified conventional UV lithography and coated with 0.1-μm-thick ITO. The turn-on electric field intensity is about 2.0 V/μm, and the field enhancement factor, β, is approximately 3,078 when the gap for field emission is 0.6 μm, as measured with a nanomanipulator in a scanning electron microscope.

Field Emission of ITO-Coated Vertically Aligned Nanowire Array.

KAUST Repository

Lee, Changhwa; Lee, Seokwoo; Lee, Seung S

2010-01-01

An indium tin oxide (ITO)-coated vertically aligned nanowire array is fabricated, and the field emission characteristics of the nanowire array are investigated. An array of vertically aligned nanowires is considered an ideal structure for a field emitter because of its parallel orientation to the applied electric field. In this letter, a vertically aligned nanowire array is fabricated by modified conventional UV lithography and coated with 0.1-μm-thick ITO. The turn-on electric field intensity is about 2.0 V/μm, and the field enhancement factor, β, is approximately 3,078 when the gap for field emission is 0.6 μm, as measured with a nanomanipulator in a scanning electron microscope.

Structural, electronic and magnetic properties of carbon doped boron nitride nanowire: Ab initio study

Energy Technology Data Exchange (ETDEWEB)

Jalilian, Jaafar, E-mail: JaafarJalilian@gmail.com [Young Researchers and Elite Club, Kermanshah Br anch, Islamic Azad University, P.O. Box: 6718997551, Kermanshah (Iran, Islamic Republic of); Kanjouri, Faramarz, E-mail: kanjouri@khu.ac.ir [Physics Department, Faculty of Science, Kharazmi University, University Square, P.O. Box: 3197937551, Karaj (Iran, Islamic Republic of)

2016-11-15

Using spin-polarized density functional theory calculations, we demonstrated that carbon doped boron nitride nanowire (C-doped BNNW) has diverse electronic and magnetic properties depending on position of carbon atoms and their percentages. Our results show that only when one carbon atom is situated on the edge of the nanowire, C-doped BNNW is transformed into half-metal. The calculated electronic structure of the C-doped BNNW suggests that doping carbon can induce localized edge states around the Fermi level, and the interaction among localized edge states leads to semiconductor to half-metal transition. Overall, the bond reconstruction causes of appearance of different electronic behavior such as semiconducting, half-metallicity, nonmagnetic metallic, and ferromagnetic metallic characters. The formation energy of the system shows that when a C atom is doped on surface boron site, system is more stable than the other positions of carbon impurity. Our calculations show that C-doped BNNW may offer unique opportunities for developing nanoscale spintronic materials.

Synthesis of metallic ReO3 nanowires

International Nuclear Information System (INIS)

Myung, Dongshin; Lee, Yumin; Lee, Jaeyeon; Kim, Myung Hwa; Yu, Hak Ki; Lee, Jong-Lam; Baik, Jeong Min; Kim, Woong

2010-01-01

We present the synthesis of highly crystalline metallic rhenium trioxide (ReO 3 ) nanowires via a simple physical vapor transport at 300 C for the first time. Based on HRTEM, the ReO 3 nanowires exhibit a core of perfect cubic perovskite-type single crystal structure with a shell of thin amorphous and disordered structures of less than 2 nm in the near surface layers. Possibly this is due to proton intercalation induced by the surface reaction of single crystal ReO 3 with water. (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Multisensor system based on bisphthalocyanine nanowires for the detection of antioxidants

International Nuclear Information System (INIS)

Gay Martín, Mónica; Saja, José Antonio de; Muñoz, Raquel; Rodríguez-Méndez, María Luz

2012-01-01

Highlights: ► Sensors based on LnPc 2 nanowires can be prepared by electrodeposition (EDP). ► An electronic tongue can be constructed by combining EDP sensors with a data treatment system. ► The e-tongue is able to discriminate antioxidants of interest in the food industry. ► The fast preparation and excellent performance of these nanostructured sensors is an advantage. - Abstract: Electrophoretic deposition has been used to prepare thin films based on nanowires of three lanthanoid bisphthalocyaninates (including dysprosium, gadolinium and lutetium). Nanowires of similar structural characteristics have been obtained for the three compounds by tuning the electrophoretic conditions according to the redox properties of each phthalocyanine. The three electrodes have been used to form an array of sensors that has been employed to discriminate phenolic antioxidants of interest in the food industry including caffeic, gallic, vanillic and ferulic acids. The Principal Component Analysis (PCA) and the Partial Least Squares Discriminant Analysis (PLS-DA) of the electrochemical signals has allowed a clear discrimination of the four phenols analyzed according to the number of phenolic groups attached to the structure (monophenol, diphenol or triphenol). The PCA loading plots indicate that the three electrodes bring complementary information facilitating the discrimination of the studied solutions. In addition, good correlations between the intensity of the redox processes observed in the electrodes and the concentration of phenolic compounds have been found with detection limits in the range of 10 −5 –10 −6 mol L −1 and good reproducibility. The fast preparation of these nanowires based films and their excellent performance offer a new sensing platform for the detection of antioxidants in a fast, reliable way.

Single cell detection using a magnetic zigzag nanowire biosensor.

Science.gov (United States)

Huang, Hao-Ting; Ger, Tzong-Rong; Lin, Ya-Hui; Wei, Zung-Hang

2013-08-07

A magnetic zigzag nanowire device was designed for single cell biosensing. Nanowires with widths of 150, 300, 500, and 800 nm were fabricated on silicon trenches by electron beam lithography, electron beam evaporation, and lift-off processes. Magnetoresistance measurements were performed before and after the attachment of a single magnetic cell to the nanowires to characterize the magnetic signal change due to the influence of the magnetic cell. Magnetoresistance responses were measured in different magnetic field directions, and the results showed that this nanowire device can be used for multi-directional detection. It was observed that the highest switching field variation occurred in a 150 nm wide nanowire when the field was perpendicular to the substrate plane. On the other hand, the highest magnetoresistance ratio variation occurred in a 800 nm wide nanowire also when the field was perpendicular to the substrate plane. Besides, the trench-structured substrate proposed in this study can fix the magnetic cell to the sensor in a fluid environment, and the stray field generated by the corners of the magnetic zigzag nanowires has the function of actively attracting the magnetic cells for detection.

Plasmon-polariton modes of dense Au nanowire arrays

Energy Technology Data Exchange (ETDEWEB)

Yan, Hongdan; Lemmens, Peter; Wulferding, Dirk; Cetin, Mehmet Fatih [IPKM, TU-BS, Braunschweig (Germany); Tornow, Sabine; Zwicknagl, Gertrud [IMP, TU-BS, Braunschweig (Germany); Krieg, Ulrich; Pfnuer, Herbert [IFP, LU Hannover (Germany); Daum, Winfried; Lilienkamp, Gerhard [IEPT, TU Clausthal (Germany); Schilling, Meinhard [EMG, TU-BS, Braunschweig (Germany)

2011-07-01

Using optical absorption and other techniques we study plasmon-polariton modes of dense Au nanowire arrays as function of geometrical parameters and coupling to molecular degrees of freedom. For this instance we electrochemically deposit Au nanowires in porous alumina with well controlled morphology and defect concentration. Transverse and longitudinal modes are observed in the absorption spectra resulting from the anisotropic plasmonic structure. The longitudinal mode shows a blue shift of energy with increasing length of the wires due to the more collective nature of this response. We compare our observations with model calculations and corresponding results on 2D Ag nanowire lattices.

Doping process of p-type GaN nanowires: A first principle study

Science.gov (United States)

Xia, Sihao; Liu, Lei; Diao, Yu; Feng, Shu

2017-10-01

The process of p-type doping for GaN nanowires is investigated using calculations starting from first principles. The influence of different doping elements, sites, types, and concentrations is discussed. Results suggest that Mg is an optimal dopant when compared to Be and Zn due to its stronger stability, whereas Be atoms are more inclined to exist in the interspace of a nanowire. Interstitially-doped GaN nanowires show notable n-type conductivity, and thus, Be is not a suitable dopant, which is to be expected since systems with inner substitutional dopants are more favorable than those with surface substitutions. Both interstitial and substitutional doping affect the atomic structure near dopants and induce charge transfer between the dopants and adjacent atoms. By altering doping sites and concentrations, nanowire atomic structures remain nearly constant. Substitutional doping models show p-type conductivity, and Mg-doped nanowires with doping concentrations of 4% showing the strongest p-type conductivity. All doping configurations are direct bandgap semiconductors. This study is expected to direct the preparation of high-quality GaN nanowires.

Synthesis of SERS active Au nanowires in different noncoordinating solvents

Energy Technology Data Exchange (ETDEWEB)

Hou Xiaomiao; Zhang Xiaoling, E-mail: zhangxl@bit.edu.cn [Key Laboratory of Cluster Science of Ministry of Education, Beijing Institute of Technology, Department of Chemistry, School of Science (China); Fang Yan, E-mail: fangyan@mail.cnu.edu.cn [Beijing Key Laboratory for Nano-Photonics and Nano-Structure (NPNS), Capital Normal University (China); Chen Shutang; Li Na; Zhou Qi [Key Laboratory of Cluster Science of Ministry of Education, Beijing Institute of Technology, Department of Chemistry, School of Science (China)

2011-06-15

Au nanowires with length up to micrometers were synthesized through a simple and one-pot solution growth method. HAuCl{sub 4} was reduced in a micellar structure formed by 1-octadecylamine and oleic acid in hexane, heptane, toluene and chloroform, respectively. As the non-polarity of noncoordinating solvents can affect the nucleation and growth rates of Au nanostructures, Au nanowires with different diameters could be obtained by changing the noncoordinating solvents in the synthetic process. The influences of the solvents on the morphology of Au nanowires were systematically studied. When using hexane as reaction solvent, the product turned to be high portion of Au nanowires with more uniform size than the others. Furthermore, surface-enhanced Raman scattering (SERS) spectrum of 2-thionaphthol was obtained on the Au nanowire-modified substrate, indicating that the as-synthesized Au nanowires have potential for highly sensitive optical detection application.

Influence factors of the inter-nanowire thermal contact resistance in the stacked nanowires

Science.gov (United States)

Wu, Dongxu; Huang, Congliang; Zhong, Jinxin; Lin, Zizhen

2018-05-01

The inter-nanowire thermal contact resistance is important for tuning the thermal conductivity of a nanocomposite for thermoelectric applications. In this paper, the stacked copper nanowires are applied for studying the thermal contact resistance. The stacked copper nanowires are firstly made by the cold-pressing method, and then the nanowire stacks are treated by sintering treatment. With the effect of the volumetric fraction of nanowires in the stack and the influence of the sintering-temperature on the thermal contact resistance discussed, results show that: The thermal conductivity of the 150-nm copper nanowires can be enlarged almost 2 times with the volumetric fraction increased from 32 to 56% because of the enlarged contact-area and contact number of a copper nanowire. When the sintering temperature increases from 293 to 673 K, the thermal conductivity of the stacked 300-nm nanowires could be enlarged almost 2.5 times by the sintering treatment, because of the improved lattice property of the contact zone. In conclusion, application of a high volumetric fraction or/and a sintering-treatment are effectivity to tune the inter-nanowire thermal contact resistance, and thus to tailor the thermal conductivity of a nanowire network or stack.

Defect induced structural inhomogeneity, ultraviolet light emission and near-band-edge photoluminescence broadening in degenerate In2O3 nanowires

Science.gov (United States)

Mukherjee, Souvik; Sarkar, Ketaki; Wiederrecht, Gary P.; Schaller, Richard D.; Gosztola, David J.; Stroscio, Michael A.; Dutta, Mitra

2018-04-01

We demonstrate here defect induced changes on the morphology and surface properties of indium oxide (In2O3) nanowires and further study their effects on the near-band-edge (NBE) emission, thereby showing the significant influence of surface states on In2O3 nanostructure based device characteristics for potential optoelectronic applications. In2O3 nanowires with cubic crystal structure (c-In2O3) were synthesized via carbothermal reduction technique using a gold-catalyst-assisted vapor-liquid-solid method. Onset of strong optical absorption could be observed at energies greater than 3.5 eV consistent with highly n-type characteristics due to unintentional doping from oxygen vacancy ({V}{{O}}) defects as confirmed using Raman spectroscopy. A combination of high resolution transmission electron microscopy, x-ray photoelectron spectroscopy and valence band analysis on the nanowire morphology and stoichiometry reveals presence of high-density of {V}{{O}} defects on the surface of the nanowires. As a result, chemisorbed oxygen species can be observed leading to upward band bending at the surface which corresponds to a smaller valence band offset of 2.15 eV. Temperature dependent photoluminescence (PL) spectroscopy was used to study the nature of the defect states and the influence of the surface states on the electronic band structure and NBE emission has been discussed. Our data reveals significant broadening of the NBE PL peak consistent with impurity band broadening leading to band-tailing effect from heavy doping.

Characterization and Optical Properties of the Single Crystalline SnS Nanowire Arrays

Directory of Open Access Journals (Sweden)

Yue GH

2009-01-01

Full Text Available Abstract The SnS nanowire arrays have been successfully synthesized by the template-assisted pulsed electrochemical deposition in the porous anodized aluminum oxide template. The investigation results showed that the as-synthesized nanowires are single crystalline structures and they have a highly preferential orientation. The ordered SnS nanowire arrays are uniform with a diameter of 50 nm and a length up to several tens of micrometers. The synthesized SnS nanowires exhibit strong absorption in visible and near-infrared spectral region and the direct energy gapE gof SnS nanowires is 1.59 eV.

Synthesis and characterization of straight and stacked-sheet AlN nanowires with high purity

International Nuclear Information System (INIS)

Lei, M.; Yang, H.; Li, P.G.; Tang, W.H.

2008-01-01

Large-scale AlN nanowires with hexagonal crystal structure were synthesized by the direct nitridation method at high temperatures. The experimental results indicate that these single-crystalline AlN nanowires have high purity and consist of straight and stacked-sheet nanowires. It is found that straight AlN nanowire grows along [1, 1, -2, 0] direction, whereas the stacked-sheet nanowire with hexagonal cross section is along [0 0 0 1] direction. It is thought that vapor-solid (VS) mechanism should be responsible for the growth of AlN nanowires

Growth and Characterisation of GaAs/AlGaAs Core-shell Nanowires for Optoelectronic Device Applications

Science.gov (United States)

Jiang, Nian

III-V semiconductor nanowires have been investigated as key components for future electronic and optoelectronic devices and systems due to their direct band gap and high electron mobility. Amongst the III-V semiconductors, the planar GaAs material system has been extensively studied and used in industries. Accordingly, GaAs nanowires are the prime candidates for nano-scale devices. However, the electronic performance of GaAs nanowires has yet to match that of state-of-the-art planar GaAs devices. The present deficiency of GaAs nanowires is typically attributed to the large surface-to- volume ratio and the tendency for non-radiative recombination centres to form at the surface. The favoured solution of this problem is by coating GaAs nanowires with AlGaAs shells, which replaces the GaAs surface with GaAs/AlGaAs interface. This thesis presents a systematic study of GaAs/AlGaAs core-shell nanowires grown by metal organic chemical vapour deposition (MOCVD), including understanding the growth, and characterisation of their structural and optical properties. The structures of the nanowires were mainly studied by scanning electron microscopy and transmis- sion electron microscopy (TEM). A procedure of microtomy was developed to prepare the cross-sectional samples for the TEM studies. The optical properties were charac- terised by photoluminescence (PL) spectroscopy. Carrier lifetimes were measured by time-resolved PL. The growth of AlGaAs shell was optimised to obtain the best optical properties, e.g. the strongest PL emission and the longest minority carrier lifetimes. (Abstract shortened by ProQuest.).

Multishell structure formation in Ni nanowire under uniaxial strain along <0 0 1> crystallographic direction: A molecular dynamics simulation

Energy Technology Data Exchange (ETDEWEB)

Wang Li, E-mail: wanglihxf@sdu.edu.c [School of Mechanical and Electrical Engineering, Shandong University at Weihai, 180 Wenhuaxi Road, Weihai 264209 (China); Peng Chuanxiao [Key Laboratory of Liquid Structure and Heredity of Materials, Ministry of Education, Shandong University, Jinan 250061 (China); Gong Jianhong [School of Mechanical and Electrical Engineering, Shandong University at Weihai, 180 Wenhuaxi Road, Weihai 264209 (China)

2010-04-01

Molecular dynamics simulations based upon embedded-atom-method potential are employed to explore the fracture behavior of Ni nanowire along <0 0 1> crystallographic direction at temperature of 300 K. We find the formation of (5,5) multishell structure (MS), which is transformed from (6,5) MS at the necking region of nanowire under the strain rate of 0.02%ps{sup -1}. A reorientation transformation from <0 0 1> to <1 1 0> is first detected before formation of (6,5) MS. The formed (5,5) MS is more stable and can be tensioned longer as lower strain rate is loaded.

Customization of Protein Single Nanowires for Optical Biosensing.

Science.gov (United States)

Sun, Yun-Lu; Sun, Si-Ming; Wang, Pan; Dong, Wen-Fei; Zhang, Lei; Xu, Bin-Bin; Chen, Qi-Dai; Tong, Li-Min; Sun, Hong-Bo

2015-06-24

An all-protein single-nanowire optical biosensor is constructed by a facile and general femtosecond laser direct writing approach with nanoscale structural customization. As-formed protein single nanowires show excellent optical properties (fine waveguiding performance and bio-applicable transmission windows), and are utilized as evanescent optical nanobiosensors for label-free biotin detection. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Electrical properties of fluorine-doped ZnO nanowires formed by biased plasma treatment

Science.gov (United States)

Wang, Ying; Chen, Yicong; Song, Xiaomeng; Zhang, Zhipeng; She, Juncong; Deng, Shaozhi; Xu, Ningsheng; Chen, Jun

2018-05-01

Doping is an effective method for tuning electrical properties of zinc oxide nanowires, which are used in nanoelectronic devices. Here, ZnO nanowires were prepared by a thermal oxidation method. Fluorine doping was achieved by a biased plasma treatment, with bias voltages of 100, 200, and 300 V. Transmission electron microscopy indicated that the nanowires treated at bias voltages of 100 and 200 V featured low crystallinity. When the bias voltage was 300 V, the nanowires showed single crystalline structures. Photoluminescence measurements revealed that concentrations of oxygen and surface defects decreased at high bias voltage. X-ray photoelectron spectroscopy suggested that the F content increased as the bias voltage was increased. The conductivity of the as-grown nanowires was less than 103 S/m; the conductivity of the treated nanowires ranged from 1 × 104-5 × 104, 1 × 104-1 × 105, and 1 × 103-2 × 104 S/m for bias voltage treatments at 100, 200, and 300 V, respectively. The conductivity improvements of nanowires formed at bias voltages of 100 and 200 V, were attributed to F-doping, defects and surface states. The conductivity of nanowires treated at 300 V was attributed to the presence of F ions. Thus, we provide a method of improving electrical properties of ZnO nanowires without altering their crystal structure.

Quantum transport in nanowire-based hybrid devices

Energy Technology Data Exchange (ETDEWEB)

Guenel, Haci Yusuf

2013-05-08

We have studied the low-temperature transport properties of nanowires contacted by a normal metal as well as by superconducting electrodes. As a consequence of quantum coherence, we have demonstrated the electron interference effect in different aspects. The mesoscopic phase coherent transport properties were studied by contacting the semiconductor InAs and InSb nanowires with normal metal electrodes. Moreover, we explored the interaction of the microscopic quantum coherence of the nanowires with the macroscopic quantum coherence of the superconductors. In superconducting Nb contacted InAs nanowire junctions, we have investigated the effect of temperature, magnetic field and electric field on the supercurrent. Owing to relatively high critical temperature of superconducting Nb (T{sub c} ∝ 9 K), we have observed the supercurrent up to 4 K for highly doped nanowire-based junctions, while for low doped nanowire-based junctions a full control of the supercurrent was achieved. Due to low transversal dimension of the nanowires, we have found a monotonous decay of the critical current in magnetic field dependent measurements. The experimental results were analyzed within narrow junction model which has been developed recently. At high bias voltages, we have observed subharmonic energy gap structures as a consequence of multiple Andreev reflection. Some of the nanowires were etched, such that the superconducting Nb electrodes are connected to both ends of the nanowire rather than covering the surface of the nanowire. As a result of well defined nanowire-superconductor interfaces, we have examined quasiparticle interference effect in magnetotransport measurements. Furthermore, we have developed a new junction geometry, such that one of the superconducting Nb electrodes is replaced by a superconducting Al. Owing to the smaller critical magnetic field of superconducting Al (B{sub c} ∝ 15-50,mT), compared to superconducting Nb (B{sub c} ∝ 3 T), we were able to studied

Surface saturation effect on mechanical and optical properties of ZnO nanowires

Directory of Open Access Journals (Sweden)

S Yazdani

2012-09-01

Full Text Available  In this work, on the basis of density functional theory and the generalized gradient approximation (GGA we optimized the electronic structure of the unsaturated and hydrogen saturated ZnO nanowires with [0001] orientation. Studying the effects of a uniaxial strain on the nanowires, we calculated the Young’s modulus and the effective piezoelectric coefficient of the nanowires. Furthermore, the effect of this uniaxial strain on the imaginary part of dielectric function of the nanowires was investigated.

Fabrication and Characterization of Mg-Doped GaN Nanowires

International Nuclear Information System (INIS)

Dong-Dong, Zhang; Cheng-Shan, Xue; Hui-Zhao, Zhuang; Ying-Long, Huang; Zou-Ping, Wang; Ying, Wang; Yong-Fu, Guo

2008-01-01

Mg-doped GaN nanowires have been synthesized by ammoniating Ga 2 O 3 films doped with Mg under flowing ammonia atmosphere at 850° C. The Mg-doped GaN nanowires are characterized by x-ray diffraction (XRD), scanning electron microscope (SEM), high-resolution transmission electron microscopy (HRTEM) and photo-luminescence (PL). The results demonstrate that the nanowires are single crystalline with hexagonal wurzite structure. The diameters of the nanowires are 20–30 nm and the lengths are 50–100 μm. The GaN nanowires show three emission bands with well-defined PL peak at 3.45 eV, 3.26 eV, 2.95 eV, respectively. The large distinct blueshift of the bandgap emission can be attributed to the Burstein–Moss effect. The peak at 3.26 eV represents the transition from the conduction-band edge to the acceptor level AM (acceptor Mg). The growth mechanism of crystalline GaN nanowires is discussed briefly. (cross-disciplinary physics and related areas of science and technology)

Electrochemical Deposition of Lanthanum Telluride Thin Films and Nanowires

Science.gov (United States)

Chi, Su (Ike); Farias, Stephen; Cammarata, Robert

2013-03-01

Tellurium alloys are characterized by their high performance thermoelectric properties and recent research has shown nanostructured tellurium alloys display even greater performance than bulk equivalents. Increased thermoelectric efficiency of nanostructured materials have led to significant interests in developing thin film and nanowire structures. Here, we report on the first successful electrodeposition of lanthanum telluride thin films and nanowires. The electrodeposition of lanthanum telluride thin films is performed in ionic liquids at room temperature. The synthesis of nanowires involves electrodepositing lanthanum telluride arrays into anodic aluminum oxide (AAO) nanoporous membranes. These novel procedures can serve as an alternative means of simple, inexpensive and laboratory-environment friendly methods to synthesize nanostructured thermoelectric materials. The thermoelectric properties of thin films and nanowires will be presented to compare to current state-of-the-art thermoelectric materials. The morphologies and chemical compositions of the deposited films and nanowires are characterized using SEM and EDAX analysis.

Synthesis and Fluorescence Property of Mn-Doped ZnSe Nanowires

Directory of Open Access Journals (Sweden)

Dongmei Han

2010-01-01

Full Text Available Water-soluble Mn-doped ZnSe luminescent nanowires were successfully prepared by hydrothermal method without any heavy metal ions and toxic reagents. The morphology, composition, and property of the products were investigated. The experimental results showed that the Mn-doped ZnSe nanowires were single well crystallized and had a zinc blende structure. The average length of the nanowires was about 2-3 μm, and the diameter was 80 nm. With the increase of Mn2+-doped concentration, the absorbance peak showed large difference. The UV-vis absorbance spectrum showed that the Mn-doped ZnSe nanowires had a sharp absorption band appearing at 360 nm. The PL spectrum revealed that the nanowires had two distinct emission bands centered at 432 and 580 nm.

Nanowire Photovoltaic Devices

Science.gov (United States)

Forbes, David

2015-01-01

Firefly Technologies, in collaboration with the Rochester Institute of Technology and the University of Wisconsin-Madison, developed synthesis methods for highly strained nanowires. Two synthesis routes resulted in successful nanowire epitaxy: direct nucleation and growth on the substrate and a novel selective-epitaxy route based on nanolithography using diblock copolymers. The indium-arsenide (InAs) nanowires are implemented in situ within the epitaxy environment-a significant innovation relative to conventional semiconductor nanowire generation using ex situ gold nanoparticles. The introduction of these nanoscale features may enable an intermediate band solar cell while simultaneously increasing the effective absorption volume that can otherwise limit short-circuit current generated by thin quantized layers. The use of nanowires for photovoltaics decouples the absorption process from the current extraction process by virtue of the high aspect ratio. While no functional solar cells resulted from this effort, considerable fundamental understanding of the nanowire epitaxy kinetics and nanopatterning process was developed. This approach could, in principle, be an enabling technology for heterointegration of dissimilar materials. The technology also is applicable to virtual substrates. Incorporating nanowires onto a recrystallized germanium/metal foil substrate would potentially solve the problem of grain boundary shunting of generated carriers by restricting the cross-sectional area of the nanowire (tens of nanometers in diameter) to sizes smaller than the recrystallized grains (0.5 to 1 micron(exp 2).

The electronic structure of radial p-n junction silicon nanowires

Science.gov (United States)

Chiou, Shan-Haw; Grossman, Jeffrey

2007-03-01

Silicon nanowires with radial p-n junctions have recently been suggested for photovoltaic applications because incident light can be absorbed along the entire length of the wire, while photogenerated carriers only need to diffuse a maximum of one radius to reach the p-n junction. If the differential of the potential is larger than the binding energy of the electron-hole pair and has a range larger than the Bohr radius of electron-hole pair, then the charge separation mechanism will be similar to traditional silicon solar cells. However, in the small-diameter limit, where quantum confinement effects are prominent, both the exciton binding energy and the potential drop will increase, and the p-n junction itself may have a dramatically different character. We present ab initio calculations based on the generalized gradient approximation (GGA) of silicon nanowires with 2-3 nm diameter in the [111] growth direction. A radial p-n junction was formed by symmetrically doping boron and phosphorous at the same vertical level along the axis of the nanowire. The competition between the slope and character of the radial electronic potential and the exciton binding energy will presented in the context of a charge separation mechanism.

Room temperature NO2 gas sensing of Au-loaded tungsten oxide nanowires/porous silicon hybrid structure

International Nuclear Information System (INIS)

Wang Deng-Feng; Liang Ji-Ran; Li Chang-Qing; Yan Wen-Jun; Hu Ming

2016-01-01

In this work, we report an enhanced nitrogen dioxide (NO 2 ) gas sensor based on tungsten oxide (WO 3 ) nanowires/porous silicon (PS) decorated with gold (Au) nanoparticles. Au-loaded WO 3 nanowires with diameters of 10 nm–25 nm and lengths of 300 nm–500 nm are fabricated by the sputtering method on a porous silicon substrate. The high-resolution transmission electron microscopy (HRTEM) micrographs show that Au nanoparticles are uniformly distributed on the surfaces of WO 3 nanowires. The effect of the Au nanoparticles on the NO 2 -sensing performance of WO 3 nanowires/porous silicon is investigated over a low concentration range of 0.2 ppm–5 ppm of NO 2 at room temperature (25 °C). It is found that the 10-Å Au-loaded WO 3 nanowires/porous silicon-based sensor possesses the highest gas response characteristic. The underlying mechanism of the enhanced sensing properties of the Au-loaded WO 3 nanowires/porous silicon is also discussed. (paper)

Synthesis and high catalytic properties of mesoporous Pt nanowire array by novel conjunct template method

Science.gov (United States)

Zhong, Yi; Xu, Cai-Ling; Kong, Ling-Bin; Li, Hu-Lin

2008-12-01

A novel conjunct template method for fabricating mesoporous Pt nanowire array through direct current (DC) electrodeposition of Pt into the pores of anodic aluminum oxide (AAO) template on Ti/Si substrate from hexagonal structured lyotropic liquid crystalline phase is demonstrated in this paper. The morphology and structure of as-prepared Pt nanowire array are characterized by field emission scanning electron microscopy (FESEM), transmission electron microscopy (TEM) and X-ray diffraction (XRD). The electrocatalytic properties of Pt nanowire array for methanol are also investigated in detail. The results indicate that Pt nanowire array has the unique mesoporous structure of approximate 40-50 nm in diameter, which resulted in the high surface area and greatly improved electrocatalytic activity for methanol. The mesoporous Pt nanowire array synthesized by the new conjunct template method has a very promising application in portable fuel cell power sources.

Growth and characterization of bismuth telluride nanowires

Energy Technology Data Exchange (ETDEWEB)

Picht, Oliver

2010-05-26

Polycrystalline Bi{sub 2}Te{sub 3} nanowires are electrochemically grown in ion track-etched polycarbonate membranes. Potentiostatic growth is demonstrated in templates of various thicknesses ranging from 10 to 100 {mu}m. The smallest observed nanowire diameters are 20 nm in thin membranes and approx. 140-180 nm in thicker membranes. The influence of the various deposition parameters on the nanowire growth rate is presented. Slower growth rates are attained by selective change of deposition potentials and lower temperatures. Nanowires synthesized at slower growth rates have shown to possess a higher degree of crystalline order and smoother surface contours. With respect to structural properties, X-ray diffraction and transmission electron microscopy verified the growth of Bi{sub 2}Te{sub 3} and evidenced the stability of specific properties, e.g. grain size or preferential orientation, with regard to variations in the deposition conditions. The interdependency of the fabrication parameters, i.e. temperature, deposition potential and nanochannel diameters, is demonstrated for wires grown in 30 {mu}m thick membranes. It is visible from diffraction analysis that texture is tunable by the growth conditions but depends also on the size of the nanochannels in the template. Both (015) and (110) reflexes are observed for the nanowire arrays. Energy dispersive X-ray analysis further points out that variation of nanochannel size could lead to a change in elemental composition of the nanowires. (orig.)

Growth and characterization of bismuth telluride nanowires

International Nuclear Information System (INIS)

Picht, Oliver

2010-01-01

Polycrystalline Bi 2 Te 3 nanowires are electrochemically grown in ion track-etched polycarbonate membranes. Potentiostatic growth is demonstrated in templates of various thicknesses ranging from 10 to 100 μm. The smallest observed nanowire diameters are 20 nm in thin membranes and approx. 140-180 nm in thicker membranes. The influence of the various deposition parameters on the nanowire growth rate is presented. Slower growth rates are attained by selective change of deposition potentials and lower temperatures. Nanowires synthesized at slower growth rates have shown to possess a higher degree of crystalline order and smoother surface contours. With respect to structural properties, X-ray diffraction and transmission electron microscopy verified the growth of Bi 2 Te 3 and evidenced the stability of specific properties, e.g. grain size or preferential orientation, with regard to variations in the deposition conditions. The interdependency of the fabrication parameters, i.e. temperature, deposition potential and nanochannel diameters, is demonstrated for wires grown in 30 μm thick membranes. It is visible from diffraction analysis that texture is tunable by the growth conditions but depends also on the size of the nanochannels in the template. Both (015) and (110) reflexes are observed for the nanowire arrays. Energy dispersive X-ray analysis further points out that variation of nanochannel size could lead to a change in elemental composition of the nanowires. (orig.)

Electrodeposition of ZnO nano-wires lattices with a controlled morphology

International Nuclear Information System (INIS)

Elias, J.; Tena-Zaera, R.; Katty, A.; Levy-Clement, C.

2006-01-01

In this work, it is shown that the electrodeposition is a changeable low cost method which allows, according to the synthesis conditions, to obtain not only plane thin layers of ZnO but different nano-structures too. In a first part, are presented the formation conditions of a compact thin layer of nanocrystalline ZnO electrodeposited on a conducing glass substrate. This layer plays a buffer layer role for the deposition of a lattice of ZnO nano-wires. The step of nano-wires nucleation is not only determined by the electrochemical parameters but by the properties of the buffer layer too as the grain sizes and its thickness. In this context, the use of an electrodeposition method in two steps allows to control the nano-wires length and diameter and their density. The morphology and the structural and optical properties of these nano-structures have been analyzed by different techniques as the scanning and transmission electron microscopy, the X-ray diffraction and the optical spectroscopy. These studies show that ZnO nano-structures are formed of monocrystalline ZnO nano-wires, presenting a great developed surface and a great optical transparency in the visible. These properties make ZnO a good material for the development of nano-structured photovoltaic cells as the extremely thin absorber cells (PV ETA) or those with dye (DSSC) which are generally prepared with porous polycrystalline TiO 2 . Its replacement by a lattice of monocrystalline ZnO nano-wires allows to reduce considerably the number of grain boundaries and in consequence to improve the transport of the electrons. The results are then promising for the PV ETA cells with ZnO nano-wires. (O.M.)

Highly ordered uniform single-crystal Bi nanowires: fabrication and characterization

International Nuclear Information System (INIS)

Bisrat, Y; Luo, Z P; Davis, D; Lagoudas, D

2007-01-01

A mechanical pressure injection technique has been used to fabricate uniform bismuth (Bi) nanowires in the pores of an anodic aluminum oxide (AAO) template. The AAO template was prepared from general purity aluminum by a two-step anodization followed by heat treatment to achieve highly ordered nanochannels. The nanowires were then fabricated by an injection technique whereby the molten Bi was injected into the AAO template using a hydraulic pressure method. The Bi nanowires prepared by this method were found to be dense and continuous with uniform diameter throughout the length. Electron diffraction experiments using the transmission electron microscope on cross-sectional and free-standing longitudinal Bi nanowires showed that the majority of the individual nanowires were single crystalline, with preferred orientation of growth along the [011] zone axis of the pseudo-cubic structure. The work presented here provides an inexpensive and effective way of fabricating highly ordered single-crystalline Bi nanowires, with uniform size distributions

Synthesis and transport characterization of electrochemically deposited CdTe nanowires

Science.gov (United States)

Kaur, Jaskiran; Kaur, Harmanmeet; Singh, R. C.

2018-04-01

This paper reports the synthesis and characterization of CdTe nanowires. A thin polymeric films were irradiated with 80MeV Ag ions at a fluence of 8E7 ions/cm2, followed by UV irradiation and chemically etching in aqueous NaOH. Nanosizes go-through pores so formed were filled using a specially designed cell via electrodeposition. Nanowires so formed were further studied using SEM, I-V, UV and XRD analysis. SEM images show very smooth and uniform CdTe nanowires freely standing on the substrate. The in-situ I-V characteristics of nano-/micro structures was carried out at room temperature by leaving the structures embedded in the insulating template membrane itself.

Microscopic and magnetic properties of template assisted electrodeposited iron nanowires

Energy Technology Data Exchange (ETDEWEB)

Irshad, M. I., E-mail: imrancssp@gmail.com; Mohamed, N. M., E-mail: noranimuti-mohamed@petronas.com.my; Yar, A., E-mail: asfandyarhargan@gmail.com [Department of Fundamental & Applied Sciences, Universiti Teknologi PETRONAS, 31750 PERAK (Malaysia); Ahmad, F., E-mail: faizahmad@petronas.com.my; Abdullah, M. Z., E-mail: zaki-abdullah@petronas.com.my [Department of Mechanical Engineering, Universiti Teknologi PETRONAS, 31750 PERAK (Malaysia)

2015-07-22

Nanowires of magnetic materials such as Iron, nickel, cobalt, and alloys of them are one of the most widely investigated structures because of their possible applications in high density magnetic recording media, sensor elements, and building blocks in biological transport systems. In this work, Iron nanowires have been prepared by electrodeposition technique using Anodized Aluminium Oxide (AAO) templates. The electrolyte used consisted of FeSO{sub 4.}6H{sub 2}O buffered with H{sub 3}BO{sub 3} and acidized by dilute H{sub 2}SO{sub 4}. FESEM analysis shows that the asdeposited nanowires are parallel to one another and have high aspect ratio with a reasonably high pore-filing factor. To fabricate the working electrode, a thin film of copper (∼ 220 nm thick) was coated on back side of AAO template by e-beam evaporation system to create electrical contact with the external circuit. The TEM results show that electrodeposited nanowires have diameter around 100 nm and are polycrystalline in structure. Magnetic properties show the existence of anisotropy for in and out of plane configuration. These nanowires have potential applications in magnetic data storage, catalysis and magnetic sensor applications.

The electronic properties of phosphorus-doped GaN nanowires from first-principle calculations

International Nuclear Information System (INIS)

Fu, Nannan; Li, Enling; Cui, Zhen; Ma, Deming; Wang, Wei; Zhang, Yulong; Song, Sha; Lin, Jie

2014-01-01

Highlights: • The P impurities tend to enrich at the surface of GaN nanowires. • The lattice parameters of GaN nanowires are changed by the P impurity. • Donor impurity level appears when the P impurity substitutes for the Ga atom. • The band gap decreases slightly when the P impurity substitutes for the N atom. - Abstract: The electronic properties of phosphorus-doped unsaturated and saturated gallium nitride (GaN) nanowires have been investigated from first-principles using the ultrasoft pseudopotential method. The results of these calculations indicate that the P impurities are enriched at the surface of gallium nitride nanowires, and that the structural symmetry of GaN nanowires is broken due to changes in the lattice parameters. When the P impurity substitutes for the Ga atom, the width of band gap increases at the Γ point, a donor impurity level appears in the band gap, and the P impurity and adjacent N atoms exists covalent interaction. Moreover, when the P impurity substitutes for the N atom, the width of the band gap decreases slightly at the Γ point, there is no obvious impurity level in the band gap, and P–Ga covalent bonds are formed, including those composed of ionic bonds. These conclusions indicate that the incorporation of P impurities can improve the field emission performance of GaN nanowires, which is consistent with the experimental results

The electronic properties of phosphorus-doped GaN nanowires from first-principle calculations

Energy Technology Data Exchange (ETDEWEB)

Fu, Nannan; Li, Enling, E-mail: Lienling@xaut.edu.cn; Cui, Zhen; Ma, Deming; Wang, Wei; Zhang, Yulong; Song, Sha; Lin, Jie

2014-05-01

Highlights: • The P impurities tend to enrich at the surface of GaN nanowires. • The lattice parameters of GaN nanowires are changed by the P impurity. • Donor impurity level appears when the P impurity substitutes for the Ga atom. • The band gap decreases slightly when the P impurity substitutes for the N atom. - Abstract: The electronic properties of phosphorus-doped unsaturated and saturated gallium nitride (GaN) nanowires have been investigated from first-principles using the ultrasoft pseudopotential method. The results of these calculations indicate that the P impurities are enriched at the surface of gallium nitride nanowires, and that the structural symmetry of GaN nanowires is broken due to changes in the lattice parameters. When the P impurity substitutes for the Ga atom, the width of band gap increases at the Γ point, a donor impurity level appears in the band gap, and the P impurity and adjacent N atoms exists covalent interaction. Moreover, when the P impurity substitutes for the N atom, the width of the band gap decreases slightly at the Γ point, there is no obvious impurity level in the band gap, and P–Ga covalent bonds are formed, including those composed of ionic bonds. These conclusions indicate that the incorporation of P impurities can improve the field emission performance of GaN nanowires, which is consistent with the experimental results.

Self-organized patterns along sidewalls of iron silicide nanowires on Si(110) and their origin

Energy Technology Data Exchange (ETDEWEB)

Das, Debolina; Mahato, J. C.; Bisi, Bhaskar; Dev, B. N., E-mail: msbnd@iacs.res.in [Department of Materials Science, Indian Association for the Cultivation of Science, Kolkata 700032 (India); Satpati, B. [Surface Physics and Material Science Division, Saha Institute of Nuclear Physics, 1/AF Bidhannagar, Kolkata 700064 (India)

2014-11-10

Iron silicide (cubic FeSi{sub 2}) nanowires have been grown on Si(110) by reactive deposition epitaxy and investigated by scanning tunneling microscopy and scanning/transmission electron microscopy. On an otherwise uniform nanowire, a semi-periodic pattern along the edges of FeSi{sub 2} nanowires has been discovered. The origin of such growth patterns has been traced to initial growth of silicide nanodots with a pyramidal Si base at the chevron-like atomic arrangement of a clean reconstructed Si(110) surface. The pyramidal base evolves into a comb-like structure along the edges of the nanowires. This causes the semi-periodic structure of the iron silicide nanowires along their edges.

Fabrication and Characterization of Magnetic Nanowires in Anodic Alumina

Science.gov (United States)

Xiao, Z. L.; Han, Y. R.; Wang, H. H.; Welp, U.; Kwok, W. K.; Crabtree, G. W.

2002-03-01

Magnetic nanowires (cobalt, iron and nickel) with diameters down to 20 nm have been fabricated by electrodeposition. Both commercial and home-made anodized aluminum oxide (AAO) membranes with nanochannel arrays were used as templates. The structure and magnetization hysteresis of the specimens with nanowires were investigated with scanning electron microscope (SEM) and superconducting quantum interference device (SQUID), respectively. Growth of nanowires with both aqueous and dimethylsulfoxide (DMSO) solutions was conducted and better quality nanowires were obtained with the organic DMSO solution. The influence of the diameter, the length and the separation of the nanochannels on the magnetization orientation was investigated in detail. Work supported by the US Department of Energy (DOE), BES-Materials Science, Contract No. W-31-109-ENG-38.

Insights into pulsed electrodeposition of GMR multilayered nanowires

International Nuclear Information System (INIS)

Pullini, D.; Busquets, D.; Ruotolo, A.; Innocenti, G.; Amigo, V.

2007-01-01

In this work, Co/Cu nanowires are fabricated by pulsed electrodeposition from a single bath solution containing both Co and Cu ions. Alternate Co and Cu layers are deposited into the nanopores of track etched polycarbonate templates. Although the feasibility of this process is generally recognized, some important issues such as process reproducibility and how structural defects affect the nanowires arrays' sensing performances are still open; conditions necessary to turn a this made system into a magnetic field sensor. The present work aims at pushing forward knowledge concerning the nanowires fabrication and defining the best growth parameters; in particular, a tight control of the growth process parameters such as single metal deposition potentials and single cycle deposition durations have been carried out for nanowires of 80 nm diameter and correlated to the system magneto-electric response

Magnetic properties in (Mn,Fe)-codoped ZnO nanowire

International Nuclear Information System (INIS)

Cao, Huawei; Lu, Pengfei; Cong, Zixiang; Yu, Zhongyuan; Cai, Ningning; Zhang, Xianlong; Gao, Tao; Wang, Shumin

2013-01-01

Using the first-principles density functional theory, we have studied the electronic structures and magnetic properties of Mn/Fe codoped ZnO nanowires systematically. The calculated results of formation energy indicate that the configuration of the lowest energy where Mn and Fe atoms form nearest neighbors on the outer cylindrical surface layer along the [0001] direction, will be determined. The magnetic coupling of 8 types of Mn/Fe codoped ZnO nanowires was investigated and ferromagnetic state was found in certain configurations. The mechanism is from the fierce hybridization between 3d of Mn and Fe with O 2p near the Fermi level. The relative energy difference for configuration VIII is 0.221 eV, which indicates that room temperature ferromagnetism could be obtained in such a system and Mn/Fe codoped ZnO nanowires are a promising nanoscale spintronic material. - Highlights: • The stable structure prefers that Mn/Fe form nearest neighbors on the outer surface. • The fierce p–d hybridization is responsible for ferromagnetic (FM) coupling. • Mn/Fe codoped ZnO nanowire is a promising FM semiconductor material

Magnetic properties in (Mn,Fe)-codoped ZnO nanowire

Energy Technology Data Exchange (ETDEWEB)

Cao, Huawei [Key Laboratory of Information Photonics and Optical Communications (Beijing University of Posts and Telecommunications), Ministry of Education, Beijing 100876 (China); Lu, Pengfei, E-mail: photon.bupt@gmail.com [Key Laboratory of Information Photonics and Optical Communications (Beijing University of Posts and Telecommunications), Ministry of Education, Beijing 100876 (China); Cong, Zixiang [School of Information and Communication Engineering, Beijing University of Posts and Telecommunications, Beijing 100976 (China); Yu, Zhongyuan; Cai, Ningning; Zhang, Xianlong [Key Laboratory of Information Photonics and Optical Communications (Beijing University of Posts and Telecommunications), Ministry of Education, Beijing 100876 (China); Gao, Tao [Institute of Atomic and Molecular Physics, Sichuan University, Chengdu 610065 (China); Wang, Shumin [Photonics Laboratory, Department of Microtechnology and Nanoscience, Chalmers University of Technology, 41296 Gothenburg (Sweden); State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050 (China)

2013-12-02

Using the first-principles density functional theory, we have studied the electronic structures and magnetic properties of Mn/Fe codoped ZnO nanowires systematically. The calculated results of formation energy indicate that the configuration of the lowest energy where Mn and Fe atoms form nearest neighbors on the outer cylindrical surface layer along the [0001] direction, will be determined. The magnetic coupling of 8 types of Mn/Fe codoped ZnO nanowires was investigated and ferromagnetic state was found in certain configurations. The mechanism is from the fierce hybridization between 3d of Mn and Fe with O 2p near the Fermi level. The relative energy difference for configuration VIII is 0.221 eV, which indicates that room temperature ferromagnetism could be obtained in such a system and Mn/Fe codoped ZnO nanowires are a promising nanoscale spintronic material. - Highlights: • The stable structure prefers that Mn/Fe form nearest neighbors on the outer surface. • The fierce p–d hybridization is responsible for ferromagnetic (FM) coupling. • Mn/Fe codoped ZnO nanowire is a promising FM semiconductor material.

Advanced Optoelectronic Devices based on Si Quantum Dots/Si Nanowires Hetero-structures

International Nuclear Information System (INIS)

Xu, J; Zhai, Y Y; Cao, Y Q; Chen, K J

2017-01-01

Si quantum dots are currently extensively studied since they can be used to develop many kinds of optoelectronic devices. In this report, we review the fabrication of Si quantum dots (Si QD) /Si nanowires (Si NWs) hetero-structures by deposition of Si QDs/SiO 2 or Si QDs/SiC multilayers on Si NWs arrays. The electroluminescence and photovoltaic devices based on the formed hetero-structures have been prepared and the improved performance is confirmed. It is also found that the surface recombination via the surface defects states on the Si NWs, especially the ones obtained by the long-time etching, may deteriorate the device properties though they exhibit the better anti-reflection characteristics. The possible surface passivation approaches are briefly discussed. (paper)

Nanowire Growth for Photovoltaics

DEFF Research Database (Denmark)

Holm, Jeppe Vilstrup

Solar cells commercial success is based on an efficiency/cost calculation. Nanowire solar cells is one of the foremost candidates to implement third generation photo voltaics, which are both very efficient and cheap to produce. This thesis is about our progress towards commercial nanowire solar...... cells. Resonance effects between the light and nanowire causes an inherent concentration of the sunlight into the nanowires, and means that a sparse array of nanowires (less than 5% of the area) can absorb all the incoming light. The resonance effects, as well as a graded index of refraction, also traps...... the light. The concentration and light trapping means that single junction nanowire solar cells have a higher theoretical maximum efficiency than equivalent planar solar cells. We have demonstrated the built-in light concentration of nanowires, by growing, contacting and characterizing a solar cell...

A comprehensive study of thermoelectric and transport properties of β-silicon carbide nanowires

Energy Technology Data Exchange (ETDEWEB)

Valentín, L. A.; Betancourt, J.; Fonseca, L. F., E-mail: luis.fonseca@upr.edu [Department of Physics University of Puerto Rico, Rio Piedras (Puerto Rico); Pettes, M. T.; Shi, L. [Department of Mechanical Engineering, The University of Texas at Austin, Texas 78712 (United States); Soszyński, M.; Huczko, A. [Department of Chemistry, Warsaw University, Pasteur 1 Str., 02-093 Warsaw (Poland)

2013-11-14

The temperature dependence of the Seebeck coefficient, the electrical and thermal conductivities of individual β-silicon carbide nanowires produced by combustion in a calorimetric bomb were studied using a suspended micro-resistance thermometry device that allows four-point probe measurements to be conducted on each nanowire. Additionally, crystal structure and growth direction for each measured nanowire was directly obtained by transmission electron microscopy analysis. The Fermi level, the carrier concentration, and mobility of each nanostructure were determined using a combination of Seebeck coefficient and electrical conductivity measurements, energy band structure and transport theory calculations. The temperature dependence of the thermal and electrical conductivities of the nanowires was explained in terms of contributions from boundary, impurity, and defect scattering.

The preparation and cathodoluminescence of ZnS nanowires grown by chemical vapor deposition

Science.gov (United States)

Huang, Meng-Wen; Cheng, Yin-Wei; Pan, Ko-Ying; Chang, Chen-Chuan; Shieu, F. S.; Shih, Han C.

2012-11-01

Single crystal ZnS nanowires were successfully synthesized in large quantities on Si (1 0 0) substrates by simple thermal chemical vapor deposition without using any catalyst. The morphology, composition, and crystal structure were characterized by field emission scanning electron microscopy (FESEM), X-ray diffraction (XRD), high-resolution transmission electron microscopy (HRTEM), energy-dispersive X-ray spectroscopy (EDX), X-ray photoelectron spectroscopy (XPS), and cathodoluminescence (CL) spectroscopy. SEM observations show that the nanowires have diameters about 20-50 nm and lengths up to several tens of micrometers. XRD and TEM results confirmed that the nanowires exhibited both wurtzite and zinc blende structures with growth directions aligned along [0 0 0 2] and [1 1 1], respectively. The CL spectrum revealed emission bands in the UV and blue regions. The blue emissions at 449 and ˜581 nm were attributed to surface states and impurity-related defects of the nanowires, respectively. The perfect crystal structure of the nanowires indicates their potential applications in nanotechnology and in the fabrication of nanodevices.

SYNTHESIS AND PHOTOLUMINESCENCE STUDIES ON ZINC OXIDE NANOWIRES

Directory of Open Access Journals (Sweden)

Nguyen Ngoc Long

2017-11-01

Full Text Available Semiconductor single crystal ZnO nanowires have been successfully synthesized by a simple method based on thermal evaporation of ZnO powders mixed with graphite. Metallic catalysts, carrying gases, and vacuum conditions are not necessary. The x-ray diffraction (XRD analysis shows that the ZnO nanowires are highly crystallized and have a typical wurtzite hexagonal structure with lattice constants a = 0.3246 nm and c = 0.5203 nm. The scanning electron microscopy (SEM images of nanowires indicate that diameters of the ZnO nanowires normally range from 100 to 300 nm and their lengths are several tens of micrometers. Photoluminescence (PL and photoluminescence excitation (PLE spectra of the nanowires were measured in the range of temperature from 15 K to the room temperature. Photoluminescence spectra at low temperatures exhibit a group of ultraviolet (UV narrow peaks in the region 368 nm ~ 390 nm, and a blue-green very broad peak at 500 nm. Origin of the emission lines in PL spectra and the lines in PLE spectra is discussed.

Variation in electrical properties of gamma irradiated cadmium selenate nanowires

Science.gov (United States)

Chauhan, R. P.; Rana, Pallavi; Narula, Chetna; Panchal, Suresh; Choudhary, Ritika

2016-07-01

Preparation of low-dimensional materials attracts more and more interest in the last few years, mainly due to the wide field of potential commercial applications ranging from life sciences, medicine and biotechnology to communication and electronics. One-dimensional systems are the smallest dimension structures that can be used for efficient transport of electrons and thus expected to be critical to the function and integration of nanoscale devices. Nanowires with well controlled morphology and extremely high aspect ratio can be obtained by replicating a nanoporous polymer ion-track membrane with cylindrical pores of controlled dimensions. With this technique, materials can be deposited within the pores of the membrane by electrochemical reduction of the desired ion. In the present study, cadmium selenate nanowires were synthesized potentiostatically via template method. These synthesized nanowires were then exposed to gamma rays by using a 60Co source at the Inter University Accelerator Centre, New Delhi, India. Structural, morphological, electrical and elemental characterizations were made in order to analyze the effect of gamma irradiation on the synthesized nanowires. I-V measurements of cadmium selenate nanowires, before and after irradiation were made with the help of Keithley 2400 source meter and Ecopia probe station. A significant change in the electrical conductivity of cadmium selenate nanowires was found after gamma irradiation. The crystallography of the synthesized nanowires was also studied using a Rigaku X-ray diffractrometer equipped with Cu-Kα radiation. XRD patterns of irradiated samples showed no variation in the peak positions or phase change.

Variation in electrical properties of gamma irradiated cadmium selenate nanowires

Energy Technology Data Exchange (ETDEWEB)

Chauhan, R.P., E-mail: chauhanrpc@gmail.com; Rana, Pallavi, E-mail: prana.phy@gmail.com; Narula, Chetna; Panchal, Suresh; Choudhary, Ritika

2016-07-15

Preparation of low-dimensional materials attracts more and more interest in the last few years, mainly due to the wide field of potential commercial applications ranging from life sciences, medicine and biotechnology to communication and electronics. One-dimensional systems are the smallest dimension structures that can be used for efficient transport of electrons and thus expected to be critical to the function and integration of nanoscale devices. Nanowires with well controlled morphology and extremely high aspect ratio can be obtained by replicating a nanoporous polymer ion-track membrane with cylindrical pores of controlled dimensions. With this technique, materials can be deposited within the pores of the membrane by electrochemical reduction of the desired ion. In the present study, cadmium selenate nanowires were synthesized potentiostatically via template method. These synthesized nanowires were then exposed to gamma rays by using a {sup 60}Co source at the Inter University Accelerator Centre, New Delhi, India. Structural, morphological, electrical and elemental characterizations were made in order to analyze the effect of gamma irradiation on the synthesized nanowires. I–V measurements of cadmium selenate nanowires, before and after irradiation were made with the help of Keithley 2400 source meter and Ecopia probe station. A significant change in the electrical conductivity of cadmium selenate nanowires was found after gamma irradiation. The crystallography of the synthesized nanowires was also studied using a Rigaku X-ray diffractrometer equipped with Cu-Kα radiation. XRD patterns of irradiated samples showed no variation in the peak positions or phase change.

Template-assisted fabrication of tin and antimony based nanowire arrays

Science.gov (United States)

Zaraska, Leszek; Kurowska, Elżbieta; Sulka, Grzegorz D.; Jaskuła, Marian

2012-10-01

Antimony nanowires with diameters ranging from 35 nm to 320 nm were successfully prepared by simple, galvanostatic electrodeposition inside the pores of anodic alumina membranes from a citrate based electrolyte. The use of the potassium antimonyl tartrate electrolyte for electrodeposition results in the formation of Sb/Sb2O3 nanowires. The structural features of the nanowire arrays were investigated by FE-SEM, and the nanowire composition was confirmed by EDS and XRD measurements. A distinct peak at about 27.5° in the XRD pattern recorded for nanowires formed in the tartrate electrolyte was attributed to the presence of co-deposited Sb2O3. Three types of dense arrays of Sn-SnSb nanowires with diameters ranging from 82 nm to 325 nm were also synthesized by DC galvanostatic electrodeposition into the anodic aluminum oxide (AAO) membranes for the first time. Only Sn and SnSb peaks appeared in the XRD pattern and both phases seem to have a relatively high degree of crystallinity. The influence of current density applied during electrodeposition on the composition of nanowires was investigated. It was found that the Sb content in fabricated nanowires decreases with increasing current density. The diameters of all synthesized nanowires roughly correspond to the dimensions of the nanochannels of AAO templates used for electrodeposition.

Tree-like SnO2 nanowires and optical properties

International Nuclear Information System (INIS)

Tao Tao; Chen Qiyuan; Hu Huiping; Chen Ying

2011-01-01

Research highlights: → Tree-like SnO 2 nanowires can be grown as low as 1100 deg. C by a vapour-solid process using a milled SnO 2 powder as the evaporation source. → FT-IR and PL measurements have shown that the tree-like nanostructures lead to superb physical properties. → The PL spectrum of such tree-like nanowires exhibits a strong PL peak at 548 nm. - Abstract: Tree-like SnO 2 nanowires have been grown by a vapor-solid process using a milled SnO 2 powder as the evaporation source. Phase, structural evolution and chemical composition were investigated using X-ray diffraction (XRD), X-ray spectrometry (EDS), and scanning electron microscopy (SEM). The process yields a large proportion of ultra-long rutile nanowires of 50-150 nm diameter and lengths up to several tens of micrometers. High-resolution transmission electron microscopy (HRTEM) shows that the SnO 2 nanowires are single crystals in the (1 0 1) growth direction with scattered smaller crystals or nanowires as the tree branches. The SnO 2 nanostructures were also examined using Fourier transform infra-red (FT-IR) and photoluminescence (PL) spectroscopy. A strong emission band centered at 548 nm dominated the PL spectrum of the tree-like nanowires.

Control of Nanofilament Structure and Observations of Quantum Point Contact Behavior in Ni/NiO Nanowire Junctions

Science.gov (United States)

Oliver, Sean; Fairfield, Jessamyn; Lee, Sunghun; Bellew, Allen; Stone, Iris; Ruppalt, Laura; Boland, John; Vora, Patrick

Resistive switching is ideal for use in non-volatile memory where information is stored in a metallic or insulating state. Nanowire junctions formed at the intersection of two Ni/NiO core/shell nanowires have emerged as a leading candidate structure where resistive switching occurs due to the formation and destruction of conducting filaments. However, significant knowledge gaps remain regarding the conduction mechanisms as measurements are typically only performed at room temperature. Here, we combine temperature-dependent current-voltage (IV) measurements from 15 - 300 K with magnetoresistance studies and achieve new insight into the nature of the conducting filaments. We identify a novel semiconducting state that behaves as a quantum point contact and find evidence for a possible electric-field driven phase transition. The insulating state exhibits unexpectedly complex IV characteristics that highlight the disordered nature of the ruptured filament while we find clear signs of anisotropic magnetoresistance in the metallic state. Our results expose previously unobserved behaviors in nanowire resistive switching devices and pave the way for future applications where both electrical and magnetic switching can be achieved in a single device. This work was supported by ONR Grant N-00014-15-1-2357.

Topological insulator nanowires and nanowire hetero-junctions

Science.gov (United States)

Deng, Haiming; Zhao, Lukas; Wade, Travis; Konczykowski, Marcin; Krusin-Elbaum, Lia

2014-03-01

The existing topological insulator materials (TIs) continue to present a number of challenges to complete understanding of the physics of topological spin-helical Dirac surface conduction channels, owing to a relatively large charge conduction in the bulk. One way to reduce the bulk contribution and to increase surface-to-volume ratio is by nanostructuring. Here we report on the synthesis and characterization of Sb2Te3, Bi2Te3 nanowires and nanotubes and Sb2Te3/Bi2Te3 heterojunctions electrochemically grown in porous anodic aluminum oxide (AAO) membranes with varied (from 50 to 150 nm) pore diameters. Stoichiometric rigid polycrystalline nanowires with controllable cross-sections were obtained using cell voltages in the 30 - 150 mV range. Transport measurements in up to 14 T magnetic fields applied along the nanowires show Aharonov-Bohm (A-B) quantum oscillations with periods corresponding to the nanowire diameters. All nanowires were found to exhibit sharp weak anti-localization (WAL) cusps, a characteristic signature of TIs. In addition to A-B oscillations, new quantization plateaus in magnetoresistance (MR) at low fields (< 0 . 7T) were observed. The analysis of MR as well as I - V characteristics of heterojunctions will be presented. Supported in part by NSF-DMR-1122594, NSF-DMR-1312483-MWN, and DOD-W911NF-13-1-0159.

Hydrogen Generation using non-polar coaxial InGaN/GaN Multiple Quantum Well Structure Formed on Hollow n-GaN Nanowires.

Science.gov (United States)

Park, Ji-Hyeon; Mandal, Arjun; Kang, San; Chatterjee, Uddipta; Kim, Jin Soo; Park, Byung-Guon; Kim, Moon-Deock; Jeong, Kwang-Un; Lee, Cheul-Ro

2016-08-24

This article demonstrates for the first time to the best of our knowledge, the merits of InGaN/GaN multiple quantum wells (MQWs) grown on hollow n-GaN nanowires (NWs) as a plausible alternative for stable photoelectrochemical water splitting and efficient hydrogen generation. These hollow nanowires are achieved by a growth method rather not by conventional etching process. Therefore this approach becomes simplistic yet most effective. We believe relatively low Ga flux during the selective area growth (SAG) aids the hollow nanowire to grow. To compare the optoelectronic properties, simultaneously solid nanowires are also studied. In this present communication, we exhibit that lower thermal conductivity of hollow n-GaN NWs affects the material quality of InGaN/GaN MQWs by limiting In diffusion. As a result of this improvement in material quality and structural properties, photocurrent and photosensitivity are enhanced compared to the structures grown on solid n-GaN NWs. An incident photon-to-current efficiency (IPCE) of around ~33.3% is recorded at 365 nm wavelength for hollow NWs. We believe that multiple reflections of incident light inside the hollow n-GaN NWs assists in producing a larger amount of electron hole pairs in the active region. As a result the rate of hydrogen generation is also increased.

Enhanced magnetotransport in nanopatterned manganite nanowires.

Science.gov (United States)

Marín, Lorena; Morellón, Luis; Algarabel, Pedro A; Rodríguez, Luis A; Magén, César; De Teresa, José M; Ibarra, Manuel R

2014-02-12

We have combined optical and focused ion beam lithographies to produce large aspect-ratio (length-to-width >300) single-crystal nanowires of La2/3Ca1/3MnO3 that preserve their functional properties. Remarkably, an enhanced magnetoresistance value of 34% in an applied magnetic field of 0.1 T in the narrowest 150 nm nanowire is obtained. The strain release at the edges together with a destabilization of the insulating regions is proposed to account for this behavior. This opens new strategies to implement these structures in functional spintronic devices.

Effect of growth temperature on photoluminescence and piezoelectric characteristics of ZnO nanowires

Energy Technology Data Exchange (ETDEWEB)

Water, Walter [Institute of Electro-Optical and Materials Science, National Formosa University, Yunlin 632, Taiwan (China); Fang, T.-H. [Institute of Electro-Optical and Materials Science, National Formosa University, Yunlin 632, Taiwan (China); Institute of Mechanical and Electromechanical Engineering, National Formosa University, Yunlin 632, Taiwan (China)], E-mail: fang.tehua@msa.hinet.net; Ji, L.-W.; Lee, C.-C. [Institute of Electro-Optical and Materials Science, National Formosa University, Yunlin 632, Taiwan (China)

2009-02-25

ZnO nanowire arrays were synthesized on Au-coated silicon (1 0 0) substrates by using vapour-liquid-solid process in this work. The effect of growth temperatures on the crystal structure and the surface morphology of ZnO nanowires were investigated by X-ray diffraction and scanning electron microscope. The absorption and optical characteristics of the nanowires were examined by Ultraviolet/Visible spectroscopy, and photoluminescence, respectively. The photoluminescence results exhibited ZnO nanowires had an ultraviolet and blue emission at 383 and 492 nm. Then a nanogenerator with ZnO nanowire arrays was fabricated and demonstrated Schottky-like current-voltage characteristics.

Fabrication of multilayer nanowires

Energy Technology Data Exchange (ETDEWEB)

Kaur, Jasveer, E-mail: kaurjasveer89@gmail.com; Singh, Avtar; Kumar, Davinder [Department of Physics, Punjabi University Patiala, 147002, Punjab (India); Thakur, Anup; Kaur, Raminder, E-mail: raminder-k-saini@yahoo.com [Department of Basic and Applied Sciences, Punjabi University Patiala, 147002, Punjab (India)

2016-05-06

Multilayer nanowires were fabricated by potentiostate ectrodeposition template synthesis method into the pores of polycarbonate membrane. In present work layer by layer deposition of two different metals Ni and Cu in polycarbonate membrane having pore size of 600 nm were carried out. It is found that the growth of nanowires is not constant, it varies with deposition time. Scanning electron microscopy (SEM) is used to study the morphology of fabricated multilayer nanowires. An energy dispersive X-ray spectroscopy (EDS) results confirm the composition of multilayer nanowires. The result shows that multilayer nanowires formed is dense.

Fabrication of multilayer nanowires

International Nuclear Information System (INIS)

Kaur, Jasveer; Singh, Avtar; Kumar, Davinder; Thakur, Anup; Kaur, Raminder

2016-01-01

Multilayer nanowires were fabricated by potentiostate ectrodeposition template synthesis method into the pores of polycarbonate membrane. In present work layer by layer deposition of two different metals Ni and Cu in polycarbonate membrane having pore size of 600 nm were carried out. It is found that the growth of nanowires is not constant, it varies with deposition time. Scanning electron microscopy (SEM) is used to study the morphology of fabricated multilayer nanowires. An energy dispersive X-ray spectroscopy (EDS) results confirm the composition of multilayer nanowires. The result shows that multilayer nanowires formed is dense.

Biotemplated synthesis of PZT nanowires.

Science.gov (United States)

Cung, Kellye; Han, Booyeon J; Nguyen, Thanh D; Mao, Sheng; Yeh, Yao-Wen; Xu, Shiyou; Naik, Rajesh R; Poirier, Gerald; Yao, Nan; Purohit, Prashant K; McAlpine, Michael C

2013-01-01

Piezoelectric nanowires are an important class of smart materials for next-generation applications including energy harvesting, robotic actuation, and bioMEMS. Lead zirconate titanate (PZT), in particular, has attracted significant attention, owing to its superior electromechanical conversion performance. Yet, the ability to synthesize crystalline PZT nanowires with well-controlled properties remains a challenge. Applications of common nanosynthesis methods to PZT are hampered by issues such as slow kinetics, lack of suitable catalysts, and harsh reaction conditions. Here we report a versatile biomimetic method, in which biotemplates are used to define PZT nanostructures, allowing for rational control over composition and crystallinity. Specifically, stoichiometric PZT nanowires were synthesized using both polysaccharide (alginate) and bacteriophage templates. The wires possessed measured piezoelectric constants of up to 132 pm/V after poling, among the highest reported for PZT nanomaterials. Further, integrated devices can generate up to 0.820 μW/cm(2) of power. These results suggest that biotemplated piezoelectric nanowires are attractive candidates for stimuli-responsive nanosensors, adaptive nanoactuators, and nanoscale energy harvesters.

Photovoltaic Performance of a Nanowire/Quantum Dot Hybrid Nanostructure Array Solar Cell.

Science.gov (United States)

Wu, Yao; Yan, Xin; Zhang, Xia; Ren, Xiaomin

2018-02-23

An innovative solar cell based on a nanowire/quantum dot hybrid nanostructure array is designed and analyzed. By growing multilayer InAs quantum dots on the sidewalls of GaAs nanowires, not only the absorption spectrum of GaAs nanowires is extended by quantum dots but also the light absorption of quantum dots is dramatically enhanced due to the light-trapping effect of the nanowire array. By incorporating five layers of InAs quantum dots into a 500-nm high-GaAs nanowire array, the power conversion efficiency enhancement induced by the quantum dots is six times higher than the power conversion efficiency enhancement in thin-film solar cells which contain the same amount of quantum dots, indicating that the nanowire array structure can benefit the photovoltaic performance of quantum dot solar cells.

Copper Nanowire Production for Interconnect Applications

Science.gov (United States)

Han, Jin-Woo (Inventor); Meyyappan, Meyya (Inventor)

2014-01-01

A method of fabricating metallic Cu nanowires with lengths up to about 25 micrometers and diameters in a range 20-100 nanometers, or greater if desired. Vertically oriented or laterally oriented copper oxide structures (CuO and/or Cu2O) are grown on a Cu substrate. The copper oxide structures are reduced with 99+ percent H or H2, and in this reduction process the lengths decrease (to no more than about 25 micrometers), the density of surviving nanostructures on a substrate decreases, and the diameters of the surviving nanostructures have a range, of about 20-100 nanometers. The resulting nanowires are substantially pure Cu and can be oriented laterally (for local or global interconnects) or can be oriented vertically (for standard vertical interconnects).

Functionalization of lanthanum hydroxide nanowires by atom transfer radical polymerization

International Nuclear Information System (INIS)

Zhou Mi; Yuan Jinying; Yuan Weizhong; Yin Yingwu; Hong Xiaoyin

2007-01-01

Atom transfer radical polymerization (ATRP) has been used to prepare a core-shell hybrid nanostructure successfully: a hard core of single-crystalline lanthanum hydroxide nanowires and a soft shell of polystyrene (PS) brushes. Transmission electron microscopy (TEM) images indicated that the resulting products presented special structures and different thicknesses of polymer layers. The chemical components and grafted PS quantities of the samples were measured by Fourier transform infrared (FT-IR) spectroscopy and thermogravimetric analysis (TGA). The polymers showed narrow polydispersity, which proved that the lanthanum hydroxide nanowires initiated the 'living'/controlled polymerization of styrene. With the modifiability of lanthanum hydroxide nanowires, the solubility increased, which affords a new way to functionalize nanowires

Study of residual gas adsorption on GaN nanowire arrays photocathode

Energy Technology Data Exchange (ETDEWEB)

Xia, Sihao; Liu, Lei, E-mail: liu1133_cn@sina.com.cn; Diao, Yu; Kong, Yike

2017-05-01

Highlights: • H{sub 2}O is more easily to absorb on the nanowire surface. • The work function increase after residual gas adsorption. • Bandgaps of the nanowire increase slightly. • Absorption coefficient is reduced and moves to higher energy side. - Abstract: In order to find out the influences of residual gas on GaN nanowire arrays photocathode, the optoelectronic properties of adsorption system are calculated on the basis of first principles. Results suggest that the residual gas adsorption will increase the work function and introduce a dipole moment with a direction from the nanowire to the adsorbates. The surface structures are changed and electrons transfer from nanowire to gas molecule. The bandgaps are enhanced after adsorption. Besides, the peak of absorption coefficients is reduced and moves to higher energy side. It is discovered that residual gas will drastically degrade the characteristics and lifetime of GaN nanowire arrays photocathode.

Semiconductor Nanowires and Nanotubes for Energy Conversion

Science.gov (United States)

Fardy, Melissa Anne

Se nanowires allowed their thermoelectric properties to be controllably tuned by increasing their carrier concentration or hole mobility. After optimal annealing, single PbSe nanowires exhibited a thermoelectric figure of merit (ZT) of 0.12 at 300 K. In addition, using a field-effect gated device, the Seebeck coefficient of single PbSe nanowires could be tuned from 64 to 193 muV˙K-1. This direct electrical field control of the electrical conductivity and Seebeck coefficient suggests a powerful strategy for optimizing ZT in thermoelectric devices and these results represent the first demonstration of field-effect modulation of the thermoelectric figure of merit in a single semiconductor nanowire. This novel strategy for thermoelectric property modulation could prove especially important in optimizing the thermoelectric properties of semiconductors where reproducible doping is difficult to achieve. Recent theoretical work has shown large enhancements in ZT for single-crystal nanowires containing nanoscale interfaces along their lengths. M2O3(ZnO) n ( M = In, Ga, Fe) superlattice nanowires were synthesized via a novel solid-state diffusion approach to investigate this possible enhancement. Using atomic resolution Z-contrast STEM imaging a detailed structural analysis was performed on In2-xGaxO3(ZnO) n nanowires, leading to the discovery that octahedral inclusions within the superlattice structure are likely generated through a defect-assisted process. Single-nanowire thermal and electrical measurements on In2-x GaxO3(ZnO)n reveal a simultaneous improvement in all contributing factors to the thermoelectric figure of merit, giving an order of magnitude enhancement over similar bulk materials at room temperature. This is the first report of enhancement of all three thermoelectric parameters (Seebeck coefficient, electrical conductivity, and thermal resistivity) for a nanowire system. Photoelectrochemical water splitting is another exciting renewable energy application that can

Silicon nanowires nanogenerator based on the piezoelectricity of alpha-quartz.

Science.gov (United States)

Yin, Kui; Lin, Haiyang; Cai, Qian; Zhao, Yi; Lee, Shuit-Tong; Hu, Fei; Shao, Mingwang

2013-12-21

Silicon nanowires are important semiconductor with core/shell structure. In this work, the piezoelectric material alpha-quartz was grown in the interface of silicon nanowires by thermal treatment at 600 °C for 0.5 h. These nanowires were employed as starting materials to fabricate piezoelectric nanogenerators, which could convert kinetic energy into electrical one, exhibiting an output voltage of 36.5 V and a response current of 1.4 μA under a free-falling object of 300 g at a height of 30 cm.

Effect of size on fracture and tensile manipulation of gold nanowires

International Nuclear Information System (INIS)

Wang, Fenying; Dai, Yanfeng; Zhao, Jianwei; Li, Qianjin; Zhang, Bin

2014-01-01

The fracture of metallic nanowires has attracted much attention owing to its reliability of application in nanoelectromechanical system. In this paper, we studied the fracture of [100] single-crystal gold nanowire subjected to uniaxial tension. The statistical breaking position distributions showed that the size effects had dominated the deformation and fracture of nanowires, and the quasi-static tensile deformations are insensitive to the styles of tensile rates. Furthermore, it was observed that the small-sized nanowire broke in the middle with disordered crystalline structure; for the middle-sized nanowire, although slippage plane had maintained the lattice degree, the fracture also happened in the middle due to symmetric tension; for the large-sized nanowire, the slippage was destroyed by symmetric tension, which induced the broken neck at one end of the nanowire. When the nanowire width is less than 5a (“a” means lattice constant, 0.408 nm for gold), the mechanical strength is relatively strong with obvious uncertainty, which can be attributed to the surface atom effect; when the width is larger than 5a, the influence of size on the mechanical property is more obvious at the constant strain rate than that at the absolute rate. Finally, the mechanical strength of the nanowire decreases with the size increasing

Preparation of one-dimensional nickel nanowires by self-assembly process

International Nuclear Information System (INIS)

Wang Dapeng; Sun Dongbai; Yu Hongying; Qiu Zhigang; Meng Huimin

2009-01-01

Self-assembly nickel nanowires were prepared by soft template method in ethylene glycol solutions. The structure and micro-morphology of the products were analyzed using X-ray diffraction (XRD) and field emission scanning electron microscope (FESEM). The results showed that the products were pure nickel powders with face-centered cubic (fcc) structure. A growth model was presented to explain the growth mechanism. The effects of pH value, surfactant, reaction temperature and reaction time on the synthesis of nickel nanowires were discussed. When pH > 11.5, the reaction temperature was between 80 deg. C and 90 deg. C, and the concentration of cetyltrimethyl ammonium bromide (CTAB) was higher than 7.0 x 10 -3 , zigzag nickel nanowires with slenderness ratio about 20 could be synthesized

Broadband absorption of semiconductor nanowire arrays for photovoltaic applications

International Nuclear Information System (INIS)

Huang, Ningfeng; Lin, Chenxi; Povinelli, Michelle L

2012-01-01

We use electromagnetic simulations to carry out a systematic study of broadband absorption in vertically-aligned semiconductor nanowire arrays for photovoltaic applications. We study six semiconductor materials that are commonly used for solar cells. We optimize the structural parameters of each nanowire array to maximize the ultimate efficiency. We plot the maximal ultimate efficiency as a function of height to determine how it approaches the perfect-absorption limit. We further show that the ultimate efficiencies of optimized nanowire arrays exceed those of equal-height thin films for all six materials and over a wide range of heights from 100 nm to 100 µm

Morphology and optical properties of ternary Zn-Sn-O semiconductor nanowires with catalyst-free growth

Energy Technology Data Exchange (ETDEWEB)

Liang, Yuan-Chang, E-mail: yuanvictory@gmail.com [Institute of Materials Engineering, National Taiwan Ocean University, Keelung 20224, Taiwan (China); Huang, Chiem-Lum; Hu, Chia-Yen; Deng, Xian-Shi; Zhong, Hua [Institute of Materials Engineering, National Taiwan Ocean University, Keelung 20224, Taiwan (China)

2012-10-05

Highlights: Black-Right-Pointing-Pointer Zn{sub 2}SnO{sub 4} nanowires with various morphologies were successfully synthesized by thermal evaporation. Black-Right-Pointing-Pointer The as-synthesized Zn{sub 2}SnO{sub 4} nanowires have a face-centered cubic crystal structure. Black-Right-Pointing-Pointer Thermal annealing of Zn{sub 2}SnO{sub 4} nanowires changes the properties of the visible emission band. - Abstract: This study reports the synthesis of Zn{sub 2}SnO{sub 4} (ZTO) nanowires with various morphologies using thermal evaporation without a metal catalyst. X-ray diffraction patterns show that the structure of the as-synthesized ZTO nanowires is a face-centered cubic spinel phase. Scanning electron microscopy images exhibit that the as-synthesized nanowires have various morphologies, and homogeneously cover the area of interest. High-resolution transmittance electron microscopy reveals that these ZTO nanowires have single crystalline microstructures with four morphologies. The results of low-temperature cathodoluminescence (CL) measurements show the crystal defects of oxygen vacancies and interstitials may contribute to blue-green and yellow-orange emissions, respectively, for the as-synthesized single nanowire. This study also discusses the effects of thermal annealing under oxygen-rich and reducing ambient on the CL properties of the single ZTO nanowire.

Large-scale fabrication of vertically aligned ZnO nanowire arrays

Science.gov (United States)

Wang, Zhong L; Das, Suman; Xu, Sheng; Yuan, Dajun; Guo, Rui; Wei, Yaguang; Wu, Wenzhuo

2013-02-05

In a method for growing a nanowire array, a photoresist layer is placed onto a nanowire growth layer configured for growing nanowires therefrom. The photoresist layer is exposed to a coherent light interference pattern that includes periodically alternately spaced dark bands and light bands along a first orientation. The photoresist layer exposed to the coherent light interference pattern along a second orientation, transverse to the first orientation. The photoresist layer developed so as to remove photoresist from areas corresponding to areas of intersection of the dark bands of the interference pattern along the first orientation and the dark bands of the interference pattern along the second orientation, thereby leaving an ordered array of holes passing through the photoresist layer. The photoresist layer and the nanowire growth layer are placed into a nanowire growth environment, thereby growing nanowires from the nanowire growth layer through the array of holes.

Biocatalytic synthesis of polymeric nanowires by micellar templates of ionic surfactants

Energy Technology Data Exchange (ETDEWEB)

Nazari, K., E-mail: nazarikh@ripi.ir [Research Institute of Petroleum Industry, NIOC, P.O. Box 14665-137, Tehran (Iran, Islamic Republic of); Chemistry Dept., Shahr Rey Islamic Azad University, P.O. Box 18735-334, Tehran (Iran, Islamic Republic of); Adhami, F.; Najjar-Safari, A.; Salmani, S. [Chemistry Dept., Shahr Rey Islamic Azad University, P.O. Box 18735-334, Tehran (Iran, Islamic Republic of); Mahmoudi, A. [Chemistry Dept., Karaj Islamic Azad University, Karaj (Iran, Islamic Republic of)

2011-07-15

Highlights: {yields} Soft-template production of polyguaiacol nanowire was done by peroxidase enzyme. {yields} Main advantage of this simple method is producing soluble encapsulated nanowires. {yields} Nanowire can be easily precipitated and separated by dilution with distilled water. {yields} Size tuned templates of sodium decyl sulfate (d = 2.7 nm) gave nanowires with d = 2-4 nm. {yields} Dried surfactant-coated wires recover freshly on specified and desired applications. -- Abstract: Micelle-templated polyguaiacol nanowires were successfully prepared via polymerization oxidation of guaiacol (o-methoxy phenol) by peroxidase enzyme in the presence of hydrogen peroxide at mild reaction conditions. The dimensions of the prepared nanowires were controlled by tuning the size and shape of the micelle structure via changing and controlling the type, chain length and molar concentrations of the ionic surfactant. The progress of the reaction and estimation of the size of soft micellar templates were followed by UV-Vis spectroscopy and dynamic light scattering (DLS). The resulting micelle encapsulated or purified polyguaiacol nanowires were characterized using transmission electron microscopy (TEM).

Biocatalytic synthesis of polymeric nanowires by micellar templates of ionic surfactants

International Nuclear Information System (INIS)

Nazari, K.; Adhami, F.; Najjar-Safari, A.; Salmani, S.; Mahmoudi, A.

2011-01-01

Highlights: → Soft-template production of polyguaiacol nanowire was done by peroxidase enzyme. → Main advantage of this simple method is producing soluble encapsulated nanowires. → Nanowire can be easily precipitated and separated by dilution with distilled water. → Size tuned templates of sodium decyl sulfate (d = 2.7 nm) gave nanowires with d = 2-4 nm. → Dried surfactant-coated wires recover freshly on specified and desired applications. -- Abstract: Micelle-templated polyguaiacol nanowires were successfully prepared via polymerization oxidation of guaiacol (o-methoxy phenol) by peroxidase enzyme in the presence of hydrogen peroxide at mild reaction conditions. The dimensions of the prepared nanowires were controlled by tuning the size and shape of the micelle structure via changing and controlling the type, chain length and molar concentrations of the ionic surfactant. The progress of the reaction and estimation of the size of soft micellar templates were followed by UV-Vis spectroscopy and dynamic light scattering (DLS). The resulting micelle encapsulated or purified polyguaiacol nanowires were characterized using transmission electron microscopy (TEM).

Characterization of silver-gallium nanowires for force and mass sensing applications

International Nuclear Information System (INIS)

Biedermann, Laura B; Reifenberger, Ronald G; Tung, Ryan C; Raman, Arvind; Yazdanpanah, Mehdi M; Cohn, Robert W

2010-01-01

We investigate the mechanical properties of cantilevered silver-gallium (Ag 2 Ga) nanowires using laser Doppler vibrometry. From measurements of the resonant frequencies and associated operating deflection shapes, we demonstrate that these Ag 2 Ga nanowires behave as ideal Euler-Bernoulli beams. Furthermore, radial asymmetries in these nanowires are detected through high resolution measurements of the vibration spectra. These crystalline nanowires possess many ideal characteristics for nanoscale force and mass sensing, including small spring constants (as low as 10 -4 N m -1 ), high frequency bandwidth with resonance frequencies in the 0.02-10 MHz range, small suspended mass (picograms), and relatively high Q-factors (∼2-50) under ambient conditions. We evaluate the utility of Ag 2 Ga nanowires for nanocantilever applications, including ultrasmall mass and high frequency bandwidth piconewton force detection.

Growth Mechanism of Nanowires: Binary and Ternary Chalcogenides

Science.gov (United States)

Singh, N. B.; Coriell, S. R.; Su, Ching-Hua; Hopkins, R. H.; Arnold, B.; Choa, Fow-Sen; Cullum, Brian

2016-01-01

Semiconductor nanowires exhibit very exciting optical and electrical properties including high transparency and a several order of magnitude better photocurrent than thin film and bulk materials. We present here the mechanism of nanowire growth from the melt-liquid-vapor medium. We describe preliminary results of binary and ternary selenide materials in light of recent theories. Experiments were performed with lead selenide and thallium arsenic selenide systems which are multifunctional material and have been used for detectors, acousto-optical, nonlinear and radiation detection applications. We observed that small units of nanocubes and elongated nanoparticles arrange and rearrange at moderate melt undercooling to form the building block of a nanowire. Since we avoided the catalyst, we observed self-nucleation and uncontrolled growth of wires from different places. Growth of lead selenide nanowires was performed by physical vapor transport method and thallium arsenic selenide nanowire by vapor-liquid-solid (VLS) method. In some cases very long wires (>mm) are formed. To achieve this goal experiments were performed to create situation where nanowires grew on the surface of solid thallium arsenic selenide itself.

Static and dynamic magnetic properties of densely packed magnetic nanowire arrays

DEFF Research Database (Denmark)

Dmytriiev, O.; Al-Jarah, U.A.S.; Gangmei, P.

2013-01-01

and a continuous ferromagnetic thin film. In particular, the competition between anisotropies associated with the shape of the individual nanowires and that of the array as a whole has been studied. Measured and simulated hysteresis loops are largely anhysteretic with zero remanence, and the micromagnetic...... configuration is such that the net magnetization vanishes in directions orthogonal to the applied field. Simulations of the remanent state reveal antiferromagnetic alignment of the magnetization in adjacent nanowires and the formation of vortex flux closure structures at the ends of each nanowire....... The excitation spectra obtained from experiment and micromagnetic simulations are in qualitative agreement for magnetic fields applied both parallel and perpendicular to the axes of the nanowires. For the field parallel to the nanowire axes, there is also good quantitative agreement between experiment...

Electrochemically grown rough-textured nanowires

International Nuclear Information System (INIS)

Tyagi, Pawan; Postetter, David; Saragnese, Daniel; Papadakis, Stergios J.; Gracias, David H.

2010-01-01

Nanowires with a rough surface texture show unusual electronic, optical, and chemical properties; however, there are only a few existing methods for producing these nanowires. Here, we describe two methods for growing both free standing and lithographically patterned gold (Au) nanowires with a rough surface texture. The first strategy is based on the deposition of nanowires from a silver (Ag)-Au plating solution mixture that precipitates an Ag-Au cyanide complex during electrodeposition at low current densities. This complex disperses in the plating solution, thereby altering the nanowire growth to yield a rough surface texture. These nanowires are mass produced in alumina membranes. The second strategy produces long and rough Au nanowires on lithographically patternable nickel edge templates with corrugations formed by partial etching. These rough nanowires can be easily arrayed and integrated with microscale devices.

Synthesis, characterization and photoluminescence of tin oxide nanoribbons and nanowires

Energy Technology Data Exchange (ETDEWEB)

Duraia, El-Shazly M.A., E-mail: duraia_physics@yahoo.co [Suez Canal University, Faculty of Science, Physics Department, Ismailia (Egypt); Al-Farabi Kazakh National University, Almaty (Kazakhstan); Institute of Physics and Technology, 11 Ibragimov Street, 050032 Almaty (Kazakhstan); Mansorov, Z.A. [Al-Farabi Kazakh National University, Almaty (Kazakhstan); Tokmolden, S. [Institute of Physics and Technology, 11 Ibragimov Street, 050032 Almaty (Kazakhstan)

2009-11-15

In this work we report the successful formation of tin oxide nanowires and tin oxide nanoribbons with high yield and by using simple cheap method. We also report the formation of curved nanoribbon, wedge-like tin oxide nanowires and star-like nanowires. The growth mechanism of these structures has been studied. Scanning electron microscope was used in the analysis and the EDX analysis showed that our samples is purely Sn and O with ratio 1:2. X-ray analysis was also used in the characterization of the tin oxide nanowire and showed the high crystallinity of our nanowires. The mechanism of the growth of our1D nanostructures is closely related to the vapor-liquid-solid (VLS) process. The photoluminescence PL measurements for the tin oxide nanowires indicated that there are three stable emission peaks centered at wavelengths 630, 565 and 395 nm. The nature of the transition may be attributed to nanocrystals inside the nanobelts or to Sn or O vacancies occurring during the growth which can induce trapped states in the band gap.

Brittle-to-Ductile Transition in Metallic Glass Nanowires.

Science.gov (United States)

Şopu, D; Foroughi, A; Stoica, M; Eckert, J

2016-07-13

When reducing the size of metallic glass samples down to the nanoscale regime, experimental studies on the plasticity under uniaxial tension show a wide range of failure modes ranging from brittle to ductile ones. Simulations on the deformation behavior of nanoscaled metallic glasses report an unusual extended strain softening and are not able to reproduce the brittle-like fracture deformation as found in experiments. Using large-scale molecular dynamics simulations we provide an atomistic understanding of the deformation mechanisms of metallic glass nanowires and differentiate the extrinsic size effects and aspect ratio contribution to plasticity. A model for predicting the critical nanowire aspect ratio for the ductile-to-brittle transition is developed. Furthermore, the structure of brittle nanowires can be tuned to a softer phase characterized by a defective short-range order and an excess free volume upon systematic structural rejuvenation, leading to enhanced tensile ductility. The presented results shed light on the fundamental deformation mechanisms of nanoscaled metallic glasses and demarcate ductile and catastrophic failure.

Precise Placement of Metallic Nanowires on a Substrate by Localized Electric Fields and Inter-Nanowire Electrostatic Interaction

Directory of Open Access Journals (Sweden)

U Hyeok Choi

2017-10-01

Full Text Available Placing nanowires at the predetermined locations on a substrate represents one of the significant hurdles to be tackled for realization of heterogeneous nanowire systems. Here, we demonstrate spatially-controlled assembly of a single nanowire at the photolithographically recessed region at the electrode gap with high integration yield (~90%. Two popular routes, such as protruding electrode tips and recessed wells, for spatially-controlled nanowire alignment, are compared to investigate long-range dielectrophoretic nanowire attraction and short-range nanowire-nanowire electrostatic interaction for determining the final alignment of attracted nanowires. Furthermore, the post-assembly process has been developed and tested to make a robust electrical contact to the assembled nanowires, which removes any misaligned ones and connects the nanowires to the underlying electrodes of circuit.

Optical study of the band structure of wurtzite GaP nanowires

OpenAIRE

Assali, S.; Greil, J.; Zardo, I.; Belabbes, A.; de Moor, M.W.A.; Kölling, S.; Koenraad, P.M.; Bechstedt, F.; Bakkers, E.P.A.M.; Haverkort, J.E.M.

2016-01-01

We investigated the optical properties of wurtzite (WZ) GaP nanowires by performing photoluminescence (PL) and time-resolved PL measurements in the temperature range from 4 K to 300 K, together with atom probe tomography to identify residual impurities in the nanowires. At low temperature, the WZ GaP luminescence shows donor-acceptor pair emission at 2.115 eV and 2.088 eV, and Burstein-Moss band-filling continuum between 2.180 and 2.253 eV, resulting in a direct band gap above 2.170 eV. Sharp...

Temperature conditions for GaAs nanowire formation by Au-assisted molecular beam epitaxy

International Nuclear Information System (INIS)

Tchernycheva, M; Harmand, J C; Patriarche, G; Travers, L; Cirlin, G E

2006-01-01

Molecular beam epitaxial growth of GaAs nanowires using Au particles as a catalyst was investigated. Prior to the growth during annealing, Au alloyed with Ga coming from the GaAs substrate, and melted. Phase transitions of the resulting particles were observed in situ by reflection high-energy electron diffraction (RHEED). The temperature domain in which GaAs nanowire growth is possible was determined. The lower limit of this domain (320 deg. C) is close to the observed catalyst solidification temperature. Below this temperature, the catalyst is buried by GaAs growth. Above the higher limit (620 deg. C), the catalyst segregates on the surface with no significant nanowire formation. Inside this domain, the influence of growth temperature on the nanowire morphology and crystalline structure was investigated in detail by scanning electron microscopy and transmission electron microscopy. The correlation of the nanowire morphology with the RHEED patterns observed during the growth was established. Wurtzite GaAs was found to be the dominant crystal structure of the wires

Facile fabrication of superhydrophobic surface with nanowire structures on nickel foil

Energy Technology Data Exchange (ETDEWEB)

Zhang, Xia, E-mail: zx@henu.edu.cn [Laboratory of Special Functional Materials, Henan University, Kaifeng 475001 (China); Guo, Yonggang [School of Mechanical and Electrical Engineering, Henan University of Technology, Zhengzhou 450007 (China); Liu, Yue; Yang, Xue; Pan, Jieqiong; Zhang, Pingyu [Laboratory of Special Functional Materials, Henan University, Kaifeng 475001 (China)

2013-12-15

A simple solution immersion method was developed for the preparation of superhydrophobic surface with nanowire structures on magnetic nickel substrate. The morphology feature, chemical composition and superhydrophobicity of the resultant surface were analyzed by means of scanning electron microscopy, X-ray powder diffraction, X-ray photoelectron spectrum and water contact angle measurements, respectively. The surface wettability could be easily changed from superhydrophilic to superhydrophobic by a simple chemical modification with stearic acid. It is confirmed that the synergic effect of the surface microstructure and surface free energy contribute to the unique water repellence. Interestingly, the superhydrophobic nickel foil can be used to fabricate a miniature magnetic boat with a controlled movement on water surface.

Oxidation of InP nanowires: a first principles molecular dynamics study.

Science.gov (United States)

Berwanger, Mailing; Schoenhalz, Aline L; Dos Santos, Cláudia L; Piquini, Paulo

2016-11-16

InP nanowires are candidates for optoelectronic applications, and as protective capping layers of III-V core-shell nanowires. Their surfaces are oxidized under ambient conditions which affects the nanowire physical properties. The majority of theoretical studies of InP nanowires, however, do not take into account the oxide layer at their surfaces. In this work we use first principles molecular dynamics electronic structure calculations to study the first steps in the oxidation process of a non-saturated InP nanowire surface as well as the properties of an already oxidized surface of an InP nanowire. Our calculations show that the O 2 molecules dissociate through several mechanisms, resulting in incorporation of O atoms into the surface layers. The results confirm the experimental observation that the oxidized layers become amorphous but the non-oxidized core layers remain crystalline. Oxygen related bonds at the oxidized layers introduce defective levels at the band gap region, with greater contributions from defects involving In-O and P-O bonds.

Growth and characterization of InGaAs based nanowire-heterostructures

International Nuclear Information System (INIS)

Treu, Julian Pascal

2017-01-01

In this thesis we investigate III-V semiconductor nanowires integrated on silicon. Focusing on InGaAs-based heterostructures, we use molecular beam epitaxy (MBE) to obtain high purity material without the use of foreign metal catalysts such as gold. Instead of catalystassisted growth we use selective-area growth using prepatterned SiO 2 /Si(111) substrates prepared by improved nanoimprint lithography, resulting in highly periodic large scale arrays (1 x 1 cm 2 ) of vertically aligned nanowires with hexagonal cross-section. Studying the influence of the main growth parameter substrate temperature, arsenic- and III-material flux we systematically optimize yield and aspect ratio of InAs nanowires for different spacings. Capitalizing on the superior morphological homogeneity of arrays with more than 90% yield, we study their use as efficient surface emitters in the Terahertz regime and find excellent performance, clearly outperforming state-of the art bulk material, when taking the surface coverage into account. Furthermore, we explore nanowires with strongly reduced diameter, where adapted growth conditions result in dimensions as small as 20 nm, well within a quantum confined regime. Starting from optimized high-temperature InAs growth, we further investigate incorporation of gallium for composition tuned ternary InGaAs structures. Delineating the optimized growth parameter space we are able to address nearly the entire compositional range up to more than 80% Ga. Correlating X-ray diffraction, transmission electron microscopy (TEM) and micro-photoluminescence spectroscopy, we find a characteristic transition in crystal structure from wurtzite to zincblende dominated phase for intermediate Ga-content, a regime with luminescence mainly limited by compositional inhomogeneities, while structural defects prevail according linewidths of In- and Ga-rich samples. Furthermore, this successfully demonstrates position-controlled integration of InGaAs nanowires with composition

Photonic nanowires for quantum optics

DEFF Research Database (Denmark)

Munsch, M.; Claudon, J.; Bleuse, J.

Photonic nanowires (PWs) are simple dielectric structures for which a very efficient and broadband spontaneous emission (SE) control has been predicted [1]. Recently, a single photon source featuring a record high efficiency was demonstrated using this geometry [2]. Using time-resolved micro-phot...

Conducting polymer nanowire arrays for high performance supercapacitors.

Science.gov (United States)

Wang, Kai; Wu, Haiping; Meng, Yuena; Wei, Zhixiang

2014-01-15

This Review provides a brief summary of the most recent research developments in the fabrication and application of one-dimensional ordered conducting polymers nanostructure (especially nanowire arrays) and their composites as electrodes for supercapacitors. By controlling the nucleation and growth process of polymerization, aligned conducting polymer nanowire arrays and their composites with nano-carbon materials can be prepared by employing in situ chemical polymerization or electrochemical polymerization without a template. This kind of nanostructure (such as polypyrrole and polyaniline nanowire arrays) possesses high capacitance, superior rate capability ascribed to large electrochemical surface, and an optimal ion diffusion path in the ordered nanowire structure, which is proved to be an ideal electrode material for high performance supercapacitors. Furthermore, flexible, micro-scale, threadlike, and multifunctional supercapacitors are introduced based on conducting polyaniline nanowire arrays and their composites. These prototypes of supercapacitors utilize the high flexibility, good processability, and large capacitance of conducting polymers, which efficiently extend the usage of supercapacitors in various situations, and even for a complicated integration system of different electronic devices. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

A detailed study of magnetization reversal in individual Ni nanowires

KAUST Repository

Vidal, Enrique Vilanova; Ivanov, Yurii P.; Mohammed, Hanan; Kosel, Jü rgen

2015-01-01

Magnetic nanowires have emerged as essential components for a broad range of applications. In many cases, a key property of these components is the switching field, which is studied as a function of the angle between the field and the nanowire. We found remarkable differences of up to 100% between the switching fields of different nanowires from the same fabrication batch. Our experimental results and micromagnetic simulations indicate that the nanowires exhibit a single domain behavior and that the switching mechanism includes vortex domain wall motion across the nanowire. The differences between the switching fields are attributed to different cross-sections of the nanowires, as found by electron microscopy. While a circular cross-section yields the smallest switching field values, any deviation from this shape results in an increase of the switching field. The shape of the nanowires' cross-sections is thus a critical parameter that has not been previously taken into account.

A detailed study of magnetization reversal in individual Ni nanowires

KAUST Repository

Vidal, Enrique Vilanova

2015-01-19

Magnetic nanowires have emerged as essential components for a broad range of applications. In many cases, a key property of these components is the switching field, which is studied as a function of the angle between the field and the nanowire. We found remarkable differences of up to 100% between the switching fields of different nanowires from the same fabrication batch. Our experimental results and micromagnetic simulations indicate that the nanowires exhibit a single domain behavior and that the switching mechanism includes vortex domain wall motion across the nanowire. The differences between the switching fields are attributed to different cross-sections of the nanowires, as found by electron microscopy. While a circular cross-section yields the smallest switching field values, any deviation from this shape results in an increase of the switching field. The shape of the nanowires\\' cross-sections is thus a critical parameter that has not been previously taken into account.

Growth of Gold-assisted Gallium Arsenide Nanowires on Silicon Substrates via Molecular Beam Epitaxy

Directory of Open Access Journals (Sweden)

Ramon M. delos Santos

2008-06-01

Full Text Available Gallium arsenide nanowires were grown on silicon (100 substrates by what is called the vapor-liquid-solid (VLS growth mechanism using a molecular beam epitaxy (MBE system. Good quality nanowires with surface density of approximately 108 nanowires per square centimeter were produced by utilizing gold nanoparticles, with density of 1011 nanoparticles per square centimeter, as catalysts for nanowire growth. X-ray diffraction measurements, scanning electron microscopy, transmission electron microscopy and Raman spectroscopy revealed that the nanowires are epitaxially grown on the silicon substrates, are oriented along the [111] direction and have cubic zincblende structure.

Fabrication of diameter-modulated and ultrathin porous nanowires in anodic aluminum oxide templates

Energy Technology Data Exchange (ETDEWEB)

Sulka, Grzegorz D., E-mail: Sulka@chemia.uj.edu.pl [Max Planck Institute of Microstructure Physics, Weinberg 2, 06120 Halle (Germany); Department of Physical Chemistry and Electrochemistry, Jagiellonian University, Ingardena 3, 30060 Krakow (Poland); Brzozka, Agnieszka [AGH University of Science and Technology, Faculty of Non-Ferrous Metals, Al. Mickiewicza 30, Krakow 30-059 (Poland); Liu, Lifeng [Max Planck Institute of Microstructure Physics, Weinberg 2, 06120 Halle (Germany)

2011-05-30

Graphical abstract: Display Omitted Highlights: > AAO templates with modulated pore diameter were fabricated by pulse anodization. > HA pulse duration tunes the shape of pores and the structure of AAO channels. > Au, Ag, Ni and Ag-Au diameter-modulated nanowires were synthetized. > Porous ultrathin Au nanowires were obtained by dealloying Ag-Au nanowires. - Abstract: Anodic aluminum oxide (AAO) membranes with modulated pore diameter were synthesized by pulse anodization in 0.3 M sulfuric acid at 1 deg. C. For AAO growth, a typical combination of alternating mild anodizing (MA) and hard anodizing (HA) pulses with applied potential pulses of 25 V and 35 V was applied. The control of the duration of HA pulses will provide an interesting way to tune the shape of pores and the structure of AAO channels. It was found that a non-uniform length of HA segments in cross section of AAO is usually observed when the HA pulse duration is shorter than 1.2 s. The pulse anodization performed with longer HA pulses leads to the formation of AAO templates with periodically modulated pore diameter and nearly uniform length of segments. Various diameter-modulated metallic nanowires (Au, Ag, Ni and Ag-Au) were fabricated by electrodeposition in the pores of anodic alumina membranes. A typical average nanowire diameter was about 30 nm and 48 nm for MA and HA nanowire segments, respectively. After a successful dealloying silver from Ag-Au nanowires, porous ultrathin Au nanowires were obtained.

Fabrication of diameter-modulated and ultrathin porous nanowires in anodic aluminum oxide templates

International Nuclear Information System (INIS)

Sulka, Grzegorz D.; Brzozka, Agnieszka; Liu, Lifeng

2011-01-01

Graphical abstract: Display Omitted Highlights: → AAO templates with modulated pore diameter were fabricated by pulse anodization. → HA pulse duration tunes the shape of pores and the structure of AAO channels. → Au, Ag, Ni and Ag-Au diameter-modulated nanowires were synthetized. → Porous ultrathin Au nanowires were obtained by dealloying Ag-Au nanowires. - Abstract: Anodic aluminum oxide (AAO) membranes with modulated pore diameter were synthesized by pulse anodization in 0.3 M sulfuric acid at 1 deg. C. For AAO growth, a typical combination of alternating mild anodizing (MA) and hard anodizing (HA) pulses with applied potential pulses of 25 V and 35 V was applied. The control of the duration of HA pulses will provide an interesting way to tune the shape of pores and the structure of AAO channels. It was found that a non-uniform length of HA segments in cross section of AAO is usually observed when the HA pulse duration is shorter than 1.2 s. The pulse anodization performed with longer HA pulses leads to the formation of AAO templates with periodically modulated pore diameter and nearly uniform length of segments. Various diameter-modulated metallic nanowires (Au, Ag, Ni and Ag-Au) were fabricated by electrodeposition in the pores of anodic alumina membranes. A typical average nanowire diameter was about 30 nm and 48 nm for MA and HA nanowire segments, respectively. After a successful dealloying silver from Ag-Au nanowires, porous ultrathin Au nanowires were obtained.

Co/Au multisegmented nanowires: a 3D array of magnetostatically coupled nanopillars

KAUST Repository

Bran, C.; Ivanov, Yurii P.; Kosel, Jü rgen; Chubykalo-Fesenko, O.; Vazquez, M.

2017-01-01

Arrays of multisegmented Co/Au nanowires with designed segment lengths and diameters have been prepared by electrodeposition into aluminum oxide templates. The high quality of the Co/Au interface and the crystallographic structure of Co segments have determined by high-resolution transmission electron microscopy. Magnetic hysteresis loop measurements show larger coercivity and squareness of multisegmented nanowires as compared to single segment Co nanowires. The complementary micromagnetic simulations are in good agreement with the experimental results, confirming that the magnetic behavior is defined mainly by magnetostatic coupling between different segments. The proposed structure constitutes an innovative route towards a 3D array of synchronized magnetic nano-oscillators with large potential in nanoelectronics.

Co/Au multisegmented nanowires: a 3D array of magnetostatically coupled nanopillars

KAUST Repository

Bran, C.

2017-01-31

Arrays of multisegmented Co/Au nanowires with designed segment lengths and diameters have been prepared by electrodeposition into aluminum oxide templates. The high quality of the Co/Au interface and the crystallographic structure of Co segments have determined by high-resolution transmission electron microscopy. Magnetic hysteresis loop measurements show larger coercivity and squareness of multisegmented nanowires as compared to single segment Co nanowires. The complementary micromagnetic simulations are in good agreement with the experimental results, confirming that the magnetic behavior is defined mainly by magnetostatic coupling between different segments. The proposed structure constitutes an innovative route towards a 3D array of synchronized magnetic nano-oscillators with large potential in nanoelectronics.

Fabrication of nanostructure via self-assembly of nanowires within the AAO template

Directory of Open Access Journals (Sweden)

Brust Mathias

2006-01-01

Full Text Available AbstractThe novel nanostructures are fabricated by the spatial chemical modification of nanowires within the anodic aluminum oxide (AAO template. To make the nanowires better dispersion in the aqueous solution, the copper is first deposited to fill the dendrite structure at the bottom of template. During the process of self-assembly, the dithiol compound was used as the connector between the nanowires and nanoparticles by a self-assembly method. The nanostructures of the nano cigars and structure which is containing particles junction are characterized by transmission electron microscopy (TEM. These kinds of novel nanostructure will be the building blocks for nanoelectronic and nanophotonic devices.

Fabrication, morphological, structural and magnetic properties of electrodeposited Fe{sub 3}Pt nanowires and nanotubes

Energy Technology Data Exchange (ETDEWEB)

Khan, U. [Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China); Adeela, N. [Centre for High Energy Physics, University of the Punjab, Lahore 54000 (Pakistan); Li, Wenjing; Irfan, M.; Javed, K.; Riaz, S. [Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China); Han, X.F., E-mail: xfhan@iphy.ac.cn [Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China)

2017-02-15

Highly ordered Fe{sub 3}Pt nanowires (NWs) and nanotubes (NTs) embedded in anodic aluminum oxide (AAO) template have been fabricated by dc electrodeposition method. Response of heat treatment on structural and magnetic properties of the samples has been studied with and without the presence of magnetic field (1 T). X-Ray Diffraction analysis shows chemically ordered L1{sub 2} face centered cubic (FCC) as the dominant phase for Fe{sub 3}Pt NWs and heat treatment improves crystallinity with retained its phase. Whereas, Fe{sub 3}Pt NTs show amorphous behavior with and without magnetic field annealing. Furthermore, magnetic properties of the samples have been investigated by vibrating sample magnetometer (VSM). Magnetic parameters of Fe{sub 3}Pt including magnetic coercivity, saturation magnetization, squareness and shape of MH-loops have been investigated as a result of simple and MF annealing. - Highlights: • Fe{sub 3}Pt NWs and NTs embedded into anodic alumina templates have been synthesized by dc electrodeposition method. • Structural analysis (XRD) confirmed the formation of fcc structure. • Magnetic properties have been measured as a function of simple and magnetic field annealing.

Mapping the Coulomb Environment in Interference-Quenched Ballistic Nanowires.

Science.gov (United States)

Gutstein, D; Lynall, D; Nair, S V; Savelyev, I; Blumin, M; Ercolani, D; Ruda, H E

2018-01-10

The conductance of semiconductor nanowires is strongly dependent on their electrostatic history because of the overwhelming influence of charged surface and interface states on electron confinement and scattering. We show that InAs nanowire field-effect transistor devices can be conditioned to suppress resonances that obscure quantized conduction thereby revealing as many as six sub-bands in the conductance spectra as the Fermi-level is swept across the sub-band energies. The energy level spectra extracted from conductance, coupled with detailed modeling shows the significance of the interface state charge distribution revealing the Coulomb landscape of the nanowire device. Inclusion of self-consistent Coulomb potentials, the measured geometrical shape of the nanowire, the gate geometry and nonparabolicity of the conduction band provide a quantitative and accurate description of the confinement potential and resulting energy level structure. Surfaces of the nanowire terminated by HfO 2 are shown to have their interface donor density reduced by a factor of 30 signifying the passivating role played by HfO 2 .

Domain wall propagation tuning in magnetic nanowires through geometric modulation

Energy Technology Data Exchange (ETDEWEB)

Arzuza, L.C.C., E-mail: luisarzuza179@gmail.com [Instituto de Física Gleb Wataghin, Universidade Estadual de Campinas, 13083-859 Campinas (SP) (Brazil); Universidad de la Costa, Departamento de Ciencias Naturales y Exactas, Calle 58 No. 55-66, Barranquilla (Colombia); López-Ruiz, R. [Instituto de Física Gleb Wataghin, Universidade Estadual de Campinas, 13083-859 Campinas (SP) (Brazil); Salazar-Aravena, D. [Instituto de Física Gleb Wataghin, Universidade Estadual de Campinas, 13083-859 Campinas (SP) (Brazil); Departamento de Física, Facultad de Ciencias, Universidad de Tarapacá, 1000007 Arica (Chile); Knobel, M. [Instituto de Física Gleb Wataghin, Universidade Estadual de Campinas, 13083-859 Campinas (SP) (Brazil); Brazilian Nanotechnology National Laboratory, Centro Nacional de Pesquisa em Energia e Materiais (CNPEM), 13083-970 Campinas (SP) (Brazil); Béron, F.; Pirota, K.R. [Instituto de Física Gleb Wataghin, Universidade Estadual de Campinas, 13083-859 Campinas (SP) (Brazil)

2017-06-15

Highlights: • The modulated nanowires dynamics occurs through two reversal modes. • Modulated nanowires show a change in the χ in contrast to homogeneous ones. • The FORC method reveals a non-uniform stray field due to shape modulation. - Abstract: The magnetic behavior of nickel modulated nanowires embedded in porous alumina membranes is investigated. Their diameters exhibit a sharp transition between below (35 nm) and above (52 nm) the theoretical limit for transverse and vortex domain walls. Magnetic hysteresis loops and first-order reversal curves (FORCs) were measured on several ordered nanowire arrays with different wide-narrow segment lengths ratio and compared with those from homogenous nanowires. The experimental magnetic response evidences a rather complex susceptibility behavior for nanowires with modulated diameter. Micromagnetic simulations on isolated and first-neighbors arrays of nanowires show that the domain wall structure, which depends on the segment diameter, suffers a transformation while crossing the diameter modulation, but without any pinning. The experimental array magnetic behavior can be ascribed to a heterogeneous stray field induced by the diameter modulation, yielding a stronger interaction field at the wide extremity than at the narrow one. The results evidence the possibility to control the domain wall propagation and morphology by modulating the lateral aspect of the magnetic entity.

Compact hybrid cell based on a convoluted nanowire structure for harvesting solar and mechanical energy

Energy Technology Data Exchange (ETDEWEB)

Xu, Chen; Wang, Zhong Lin [School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, GA 30332 (United States)

2011-02-15

A fully integrated, solid-state, compact hybrid cell (CHC) that comprises ''convoluted'' ZnO nanowire structures for concurrent harvesting of both solar and mechanical energy is demonstrated. The compact hybrid cell is based on a conjunction design of an organic solid-state dye-sensitized solar cell (DSSC) and piezoelectric nanogenerator in one compact structure. The CHC shows a significant increase in output power, clearly demonstrating its potential for simultaneously harvesting multiple types of energy for powering small electronic devices for independent, sustainable, and mobile operation. (Copyright copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Manganese oxide nanowires, films, and membranes and methods of making

Science.gov (United States)

Suib, Steven Lawrence [Storrs, CT; Yuan, Jikang [Storrs, CT

2008-10-21

Nanowires, films, and membranes comprising ordered porous manganese oxide-based octahedral molecular sieves, and methods of making, are disclosed. A single crystal ultra-long nanowire includes an ordered porous manganese oxide-based octahedral molecular sieve, and has an average length greater than about 10 micrometers and an average diameter of about 5 nanometers to about 100 nanometers. A film comprises a microporous network comprising a plurality of single crystal nanowires in the form of a layer, wherein a plurality of layers is stacked on a surface of a substrate, wherein the nanowires of each layer are substantially axially aligned. A free standing membrane comprises a microporous network comprising a plurality of single crystal nanowires in the form of a layer, wherein a plurality of layers is aggregately stacked, and wherein the nanowires of each layer are substantially axially aligned.

Formation of Ag nanowires on graphite stepped surfaces. A DFT study

Science.gov (United States)

Ambrusi, Rubén E.; García, Silvana G.; Pronsato, María E.

2015-01-01

We investigate the feasibility of obtaining silver nanowires on graphite stepped surfaces theoretically, using density functional theory calculations. Three layer slabs are used to model graphite surfaces with and without defects. Adsorption energies for Ag atoms on graphite surfaces were calculated showing the preference of Ag adatoms to locate on the steps, forming linear structures like nanowires. An analysis of the charge densities and projected densities of states for different structures is also performed.

Probe based manipulation and assembly of nanowires into organized mesostructures

Science.gov (United States)

Reynolds, K.; Komulainen, J.; Kivijakola, J.; Lovera, P.; Iacopino, D.; Pudas, M.; Vähäkangas, J.; Röning, J.; Redmond, G.

2008-12-01

A convenient approach to patterning inorganic and organic nanowires using a novel probe manipulator is presented. The system utilizes an electrochemically etched tungsten wire probe mounted onto a 3D actuator that is directed by a 3D controller. When it is engaged by the user, the movement of the probe and the forces experienced by the tip are simultaneously reported in real time. Platinum nanowires are manipulated into organized mesostructures on silicon chip substrates. In particular, individual nanowires are systematically removed from aggregates, transferred to a chosen location, and manipulated into complex structures in which selected wires occupy specific positions with defined orientations. Rapid prototyping of complex mesostructures, by pushing, rotating and bending conjugated polymer, i.e., polyfluorene, nanowires into various configurations, is also achieved. By exploiting the strong internal axial alignment of polymer chains within the polyfluorene nanowires, mesostructures tailored to exhibit distinctly anisotropic optical properties, such as birefringence and photoluminescence dichroism, are successfully assembled on fused silica substrates.

Probe based manipulation and assembly of nanowires into organized mesostructures

International Nuclear Information System (INIS)

Reynolds, K; Lovera, P; Iacopino, D; Redmond, G; Komulainen, J; Pudas, M; Vaehaekangas, J; Kivijakola, J; Roening, J

2008-01-01

A convenient approach to patterning inorganic and organic nanowires using a novel probe manipulator is presented. The system utilizes an electrochemically etched tungsten wire probe mounted onto a 3D actuator that is directed by a 3D controller. When it is engaged by the user, the movement of the probe and the forces experienced by the tip are simultaneously reported in real time. Platinum nanowires are manipulated into organized mesostructures on silicon chip substrates. In particular, individual nanowires are systematically removed from aggregates, transferred to a chosen location, and manipulated into complex structures in which selected wires occupy specific positions with defined orientations. Rapid prototyping of complex mesostructures, by pushing, rotating and bending conjugated polymer, i.e., polyfluorene, nanowires into various configurations, is also achieved. By exploiting the strong internal axial alignment of polymer chains within the polyfluorene nanowires, mesostructures tailored to exhibit distinctly anisotropic optical properties, such as birefringence and photoluminescence dichroism, are successfully assembled on fused silica substrates.

Structural and electrochemical properties of single crystalline MoV 2O8 nanowires for energy storage devices

KAUST Repository

Shahid, Muhammad; Liu, Jingling; Ali, Zahid; Shakir, Imran; Warsi, Muhammad Farooq

2013-01-01

We report the synthesis of MoV2O8 nanowires of high quality using spin coating followed by the thermal annealing process. Transmission electron microscopy (TEM) reveals the average diameter of synthesized nanowire about 100 nm, and average length ranges from 1 to 5 μm. The TEM analysis further confirms the <001> growth direction of MoV 2O8 nanowires. The electrochemical properties of synthesized nanowires using cyclic voltammetry show the specific capacitance 56 Fg-1 at the scan rate of 5 mV s-1 that remains 24 Fg -1 at 100 mV s-1. The electrochemical measurements suggest that the MoV2O8 nanowires can be used as a material for the future electrochemical capacitors (energy storage devices). © 2012 Published by Elsevier Inc. All rights reserved.

Structural and electrochemical properties of single crystalline MoV 2O8 nanowires for energy storage devices

KAUST Repository

Shahid, Muhammad

2013-05-01

We report the synthesis of MoV2O8 nanowires of high quality using spin coating followed by the thermal annealing process. Transmission electron microscopy (TEM) reveals the average diameter of synthesized nanowire about 100 nm, and average length ranges from 1 to 5 μm. The TEM analysis further confirms the <001> growth direction of MoV 2O8 nanowires. The electrochemical properties of synthesized nanowires using cyclic voltammetry show the specific capacitance 56 Fg-1 at the scan rate of 5 mV s-1 that remains 24 Fg -1 at 100 mV s-1. The electrochemical measurements suggest that the MoV2O8 nanowires can be used as a material for the future electrochemical capacitors (energy storage devices). © 2012 Published by Elsevier Inc. All rights reserved.

Growth Mechanism of Nanowires: Ternary Chalcogenides

Science.gov (United States)

Singh, N. B.; Coriell, S. R.; Hopkins, R. H.; Su, Ching Hua; Arnold, B.; Choa, Fow-Sen; Cullum, Brian

2016-01-01

In the past two decades there has been a large rise in the investment and expectations for nanotechnology use. Almost every area of research has projected improvements in sensors, or even a promise for the emergence of some novel device technologies. For these applications major focuses of research are in the areas of nanoparticles and graphene. Although there are some near term applications with nanowires in photodetectors and other low light detectors, there are few papers on the growth mechanism and fabrication of nanowire-based devices. Semiconductor nanowires exhibit very favorable and promising optical properties, including high transparency and a several order of magnitude better photocurrent than thin film and bulk materials. We present here an overview of the mechanism of nanowire growth from the melt, and some preliminary results for the thallium arsenic selenide material system. Thallium arsenic selenide (TAS) is a multifunctional material combining excellent acousto-optical, nonlinear and radiation detection properties. We observed that small units of (TAS) nanocubes arrange and rearrange at moderate melt undercooling to form the building block of a nanowire. In some cases very long wires (less than mm) are formed. Since we avoided the catalyst, we observed self-nucleation and uncontrolled growth of wires from different places.

Single Nanowire Probe for Single Cell Endoscopy and Sensing

Science.gov (United States)

Yan, Ruoxue

The ability to manipulate light in subwavelength photonic and plasmonic structures has shown great potentials in revolutionizing how information is generated, transformed and processed. Chemically synthesized nanowires, in particular, offers a unique toolbox not only for highly compact and integrated photonic modules and devices, including coherent and incoherent light sources, waveguides, photodetectors and photovoltaics, but also for new types of nanoscopic bio-probes for spot cargo delivery and in-situ single cell endoscopy and sensing. Such nanowire probes would enable us to carry out intracellular imaging and probing with high spatial resolution, monitor in-vivo biological processes within single living cells and greatly improve our fundamental understanding of cell functions, intracellular physiological processes, and cellular signal pathways. My work is aimed at developing a material and instrumental platform for such single nanowire probe. Successful optical integration of Ag nanowire plasmonic waveguides, which offers deep subwavelength mode confinement, and conventional photonic waveguides was demonstrated on a single nanowire level. The highest plasmonic-photonic coupling efficiency coupling was found at small coupling angles and low input frequencies. The frequency dependent propagation loss was observed in Ag nanowire and was confirmed by quantitative measurement and in agreement with theoretical expectations. Rational integration of dielectric and Ag nanowire waveguide components into hybrid optical-plasmonic routing devices has been demonstrated. This capability is essential for incorporating sub-100nm Ag nanowire waveguides into optical fiber based nanoprobes for single cell endoscopy. The nanoprobe system based on single nanowire waveguides was demonstrated by optically coupling semiconductor or metal nanowire with an optical fiber with tapered tip. This nanoprobe design requires minimal instrumentation which makes it cost efficient and readily

Horizontal Assembly of Single Nanowire Diode Fabricated by p-n Junction GaN NW Grown by MOCVD

Directory of Open Access Journals (Sweden)

Ji-Hyeon Park

2014-01-01

Full Text Available Uniaxially p-n junction gallium nitride nanowires have been synthesized via metal-organic chemical vapor deposition method. Nanowires prepared on Si(111 substrates were found to grow perpendicular to the substrate, and the transmission electron microscopy studies demonstrated that the nanowires had singlecrystalline structures with a growth axis. The parallel assembly of the p-n junction nanowire was prepared on a Si substrate with a thermally grown SiO2 layer. The transport studies of horizontal gallium nitride nanowire structures assembled from p- and n-type materials show that these junctions correspond to well-defined p-n junction diodes. The p-n junction devices based on GaN nanowires suspended over the electrodes were fabricated and their electrical properties were investigated. The horizontally assembled gallium nitride nanowire diodes suspended over the electrodes exhibited a substantial increase in conductance under UV light exposure. Apart from the selectivity to different light wavelengths, high responsivity and extremely short response time have also been obtained.

Structure and optical properties of cored wurtzite (Zn,Mg)O heteroepitaxial nanowires

International Nuclear Information System (INIS)

Heo, Y.W.; Abernathy, C.; Pruessner, K.; Sigmund, W.; Norton, D.P.; Overberg, M.; Ren, F.; Chisholm, M.F.

2004-01-01

The synthesis, structure, and optical properties of one-dimensional heteroepitaxial cored (Zn,Mg)O semiconductor nanowires grown by a catalyst-driven molecular beam epitaxy technique are discussed. The structures form spontaneously in a Zn, Mg and O 2 /O 3 flux, consisting of a single crystal, Zn-rich Zn 1-x Mg x O(x 1-y Mg y O(y>>0.02) sheath. High resolution Z-contrast scanning transmission electron microscopy shows core diameters as small as 4 nm. The cored structure forms spontaneously under constant flux due to a bimodal growth mechanism in which the core forms via bulk like vapor-liquid-solid growth, while the outer sheath grows as a heteroepitaxial layer. Temperature-dependent photoluminescence shows a slight blueshift in the near band edge peak, which is attributed to a few percent Mg doping in the nanoscale ZnO core. The catalyst-driven molecular beam epitaxy technique provides for site-specific nanorod growth on arbitrary substrates

Synthesis and cathodoluminescence of Sb/P co-doped GaN nanowires

International Nuclear Information System (INIS)

Wang, Zaien; Liu, Baodan; Yuan, Fang; Hu, Tao; Zhang, Guifeng; Dierre, Benjamin; Hirosaki, Naoto; Sekiguchi, Takashi; Jiang, Xin

2014-01-01

Sb/P co-doped Gallium Nitride (GaN) nanowires were synthesized via a simple chemical vapor deposition (CVD) process by heating Ga 2 O 3 and Sb powders in NH 3 atmosphere. Scanning electron microscope (SEM), X-ray diffraction (XRD), transmission electron microscope (TEM) and energy dispersive X-ray spectroscopy (EDS) measurements confirmed the as-synthesized products were Sb/P co-doped GaN nanowires with rough morphology and hexagonal wurtzite structure. Room temperature cathodoluminescence (CL) demonstrated that an obvious band shift of GaN nanowires can be observed due to Sb/P co-doping. Possible explanation for the growth and luminescence mechanism of Sb/P co-doped GaN nanowires was discussed. Highlight: • Sb/P co-doped GaN nanowires were synthesized through a well-designed multi-channel chemical vapor deposition (CVD) process. • Sb/P co-doping leads to the crystallinity deterioration of GaN nanowires. • Sb/P co-doping caused the red-shift of GaN nanowires band-gap in UV range. • Compared with Sb doping, P atoms are more easy to incorporate into the GaN lattice

Ambient template synthesis of multiferroic MnWO4 nanowires and nanowire arrays

International Nuclear Information System (INIS)

Zhou Hongjun; Yiu Yuen; Aronson, M.C.; Wong, Stanislaus S.

2008-01-01

The current report describes the systematic synthesis of polycrystalline, multiferroic MnWO 4 nanowires and nanowire arrays with controllable chemical composition and morphology, using a modified template-directed methodology under ambient room-temperature conditions. We were able to synthesize nanowires measuring 55±10, 100±20, and 260±40 nm in diameter, respectively, with lengths ranging in the microns. Extensive characterization of as-prepared samples has been performed using X-ray diffraction, scanning electron microscopy, transmission electron microscopy (TEM), high-resolution TEM, and energy-dispersive X-ray spectroscopy. Magnetic behavior in these systems was also probed. - Graphical abstract: Systematic synthesis of crystalline, multiferroic MnWO4 nanowires and nanowire arrays with controllable chemical composition and morphology, using a modified template-directed methodology under ambient room-temperature conditions

Si Incorporation in InP Nanowires Grown by Au-Assisted Molecular Beam Epitaxy

Directory of Open Access Journals (Sweden)

Lorenzo Rigutti

2009-01-01

Full Text Available We report on the growth, structural characterization, and conductivity studies of Si-doped InP nanowires grown by Au-assisted molecular beam epitaxy. It is shown that Si doping reduces the mean diffusion length of adatoms on the lateral nanowire surface and consequently reduces the nanowire growth rate and promotes lateral growth. A resistivity as low as 5.1±0.3×10−5 Ω⋅cm is measured for highly doped nanowires. Two dopant incorporation mechanisms are discussed: incorporation via catalyst particle and direct incorporation on the nanowire sidewalls. The first mechanism is shown to be less efficient than the second one, resulting in inhomogeneous radial dopant distribution.

Crystal structure redetermination of ε-Ni.sub.3./sub.Si.sub.2./sub. from a single nanowire by dynamical refinement of precession electron diffraction data

Czech Academy of Sciences Publication Activity Database

Correa, Cinthia Antunes; Klementová, Mariana; Dřínek, Vladislav; Kopeček, Jaromír; Palatinus, Lukáš

2016-01-01

Roč. 672, Jul (2016), s. 505-509 ISSN 0925-8388 R&D Projects: GA ČR GA13-25747S Institutional support: RVO:68378271 ; RVO:67985858 Keywords : precession electron diffraction tomography * structure determination * nanowire * dynamical refinement Subject RIV: BM - Solid Matter Physics ; Magnetism; CA - Inorganic Chemistry (UCHP-M) OBOR OECD: Condensed matter physics (including formerly solid state physics, supercond.); Inorganic and nuclear chemistry (UCHP-M) Impact factor: 3.133, year: 2016

Superconductivity in nanowires

CERN Document Server

Bezryadin, Alexey

2012-01-01

The importance and actuality of nanotechnology is unabated and will be for years to come. A main challenge is to understand the various properties of certain nanostructures, and how to generate structures with specific properties for use in actual applications in Electrical Engineering and Medicine.One of the most important structures are nanowires, in particular superconducting ones. They are highly promising for future electronics, transporting current without resistance and at scales of a few nanometers. To fabricate wires to certain defined standards however, is a major challenge, and so i

Synthesis and magnetic properties of cobalt-iron/cobalt-ferrite soft/hard magnetic core/shell nanowires

Science.gov (United States)

Leandro Londoño-Calderón, César; Moscoso-Londoño, Oscar; Muraca, Diego; Arzuza, Luis; Carvalho, Peterson; Pirota, Kleber Roberto; Knobel, Marcelo; Pampillo, Laura Gabriela; Martínez-García, Ricardo

2017-06-01

A straightforward method for the synthesis of CoFe2.7/CoFe2O4 core/shell nanowires is described. The proposed method starts with a conventional pulsed electrodeposition procedure on alumina nanoporous template. The obtained CoFe2.7 nanowires are released from the template and allowed to oxidize at room conditions over several weeks. The effects of partial oxidation on the structural and magnetic properties were studied by x-ray spectrometry, magnetometry, and scanning and transmission electron microscopy. The results indicate that the final nanowires are composed of 5 nm iron-cobalt alloy nanoparticles. Releasing the nanowires at room conditions promoted surface oxidation of the nanoparticles and created a CoFe2O4 shell spinel-like structure. The shell avoids internal oxidation and promotes the formation of bi-magnetic soft/hard magnetic core/shell nanowires. The magnetic properties of both the initial single-phase CoFe2.7 nanowires and the final core/shell nanowires, reveal that the changes in the properties from the array are due to the oxidation more than effects associated with released processes (disorder and agglomeration).

Synthesis of vertical arrays of ultra long ZnO nanowires on noncrystalline substrates

International Nuclear Information System (INIS)

Kwon, Bong Jun; Lee, Kyung Moon; Shin, Hae-Young; Kim, Jinwoong; Liu, Jinzhang; Yoon, Seokhyun; Lee, Soonil; Ahn, Y.H.; Park, Ji-Yong

2012-01-01

Highlights: ► Arrays of vertical ultra-long ZnO nanowires with lengths upto 300 μm. ► Controls of lengths and diameters of vertical arrays of ZnO nanowires on SiO 2 substrates. ► Luminescent and electrical properties of ZnO nanowires prepared with different growth conditions. - Abstract: Vertically aligned arrays of ultralong ZnO nanowires were synthesized on SiO 2 substrates with carbothermal vapor phase transport method with Au seeding layer. High density of vertically aligned ZnO nanowires with lengths from a few to ∼300 μm could be grown by controlling growth conditions. Supply of high concentration of Zn vapor and control of the ratio between Zn vapor and oxygen are found to have the most significant effects on the growth of long ZnO nanowires in the vapor–solid growth mechanism. The nanowires are of high crystalline quality as confirmed by various structural, compositional, and luminescent measurements. Luminescent and electrical properties of ZnO nanowires with different growth conditions were also investigated.

Silicon nanowires for photovoltaic solar energy conversion.

Science.gov (United States)

Peng, Kui-Qing; Lee, Shuit-Tong

2011-01-11

Semiconductor nanowires are attracting intense interest as a promising material for solar energy conversion for the new-generation photovoltaic (PV) technology. In particular, silicon nanowires (SiNWs) are under active investigation for PV applications because they offer novel approaches for solar-to-electric energy conversion leading to high-efficiency devices via simple manufacturing. This article reviews the recent developments in the utilization of SiNWs for PV applications, the relationship between SiNW-based PV device structure and performance, and the challenges to obtaining high-performance cost-effective solar cells.

Polarized and resonant Raman spectroscopy on single InAs nanowires

Science.gov (United States)

Möller, M.; de Lima, M. M., Jr.; Cantarero, A.; Dacal, L. C. O.; Madureira, J. R.; Iikawa, F.; Chiaramonte, T.; Cotta, M. A.

2011-08-01

We report polarized Raman scattering and resonant Raman scattering studies on single InAs nanowires. Polarized Raman experiments show that the highest scattering intensity is obtained when both the incident and analyzed light polarizations are perpendicular to the nanowire axis. InAs wurtzite optical modes are observed. The obtained wurtzite modes are consistent with the selection rules and also with the results of calculations using an extended rigid-ion model. Additional resonant Raman scattering experiments reveal a redshifted E1 transition for InAs nanowires compared to the bulk zinc-blende InAs transition due to the dominance of the wurtzite phase in the nanowires. Ab initio calculations of the electronic band structure for wurtzite and zinc-blende InAs phases corroborate the observed values for the E1 transitions.

Understanding the formation process of exceptionally long fullerene-based nanowires

DEFF Research Database (Denmark)

Solov'yov, Ilia; Geng, Junfeng; Solov'yov, Andrey V.

2009-01-01

solution of C$_60$. We have performed a thorough theoretical analysis, aiming at gaining an in-depth understanding of the exceptionally large aspect ratio of C$_60$-based nanowires. By accounting for different interactions in the system we have calculated the structures of the unit cell and determined...... the role of the fullerene and of the solvent molecules in the crystallization process of the nanowires. We have calculated the adhesion energy of C$_60$ molecules to the nanowire surface, and on the basis of this explained the growth anisotropy of the crystal. To get a more profound understanding...

Site-selective fabrication of conducting molecular nanowires based on electrocrystallization

International Nuclear Information System (INIS)

Hasegawa, H.; Kubota, T.; Mashiko, S.

2005-01-01

We have grown nanowires in a selective position by using an electrochemical process and alternating current. Nanoscale electrocrystallization was carried out in an axially substituted phthalocyanine solution using substrates with two electrodes formed by photolithography. The growth area was limited to the narrowest part of the gap between the tips of the electrodes by using tapered electrodes. The nanowires obtained had a width of approximately 100 nm and a length of more than 1 μm. Analysis of the selected-area electron diffraction pattern showed that the nanowire structure was identical to that of bulk crystal

Understanding InP Nanowire Array Solar Cell Performance by Nanoprobe-Enabled Single Nanowire Measurements.

Science.gov (United States)

Otnes, Gaute; Barrigón, Enrique; Sundvall, Christian; Svensson, K Erik; Heurlin, Magnus; Siefer, Gerald; Samuelson, Lars; Åberg, Ingvar; Borgström, Magnus T

2018-05-09

III-V solar cells in the nanowire geometry might hold significant synthesis-cost and device-design advantages as compared to thin films and have shown impressive performance improvements in recent years. To continue this development there is a need for characterization techniques giving quick and reliable feedback for growth development. Further, characterization techniques which can improve understanding of the link between nanowire growth conditions, subsequent processing, and solar cell performance are desired. Here, we present the use of a nanoprobe system inside a scanning electron microscope to efficiently contact single nanowires and characterize them in terms of key parameters for solar cell performance. Specifically, we study single as-grown InP nanowires and use electron beam induced current characterization to understand the charge carrier collection properties, and dark current-voltage characteristics to understand the diode recombination characteristics. By correlating the single nanowire measurements to performance of fully processed nanowire array solar cells, we identify how the performance limiting parameters are related to growth and/or processing conditions. We use this understanding to achieve a more than 7-fold improvement in efficiency of our InP nanowire solar cells, grown from a different seed particle pattern than previously reported from our group. The best cell shows a certified efficiency of 15.0%; the highest reported value for a bottom-up synthesized InP nanowire solar cell. We believe the presented approach have significant potential to speed-up the development of nanowire solar cells, as well as other nanowire-based electronic/optoelectronic devices.

Unveiling the Formation Pathway of Single Crystalline Porous Silicon Nanowires

Science.gov (United States)

Zhong, Xing; Qu, Yongquan; Lin, Yung-Chen; Liao, Lei; Duan, Xiangfeng

2011-01-01

Porous silicon nanowire is emerging as an interesting material system due to its unique combination of structural, chemical, electronic, and optical properties. To fully understand their formation mechanism is of great importance for controlling the fundamental physical properties and enabling potential applications. Here we present a systematic study to elucidate the mechanism responsible for the formation of porous silicon nanowires in a two-step silver-assisted electroless chemical etching method. It is shown that silicon nanowire arrays with various porosities can be prepared by varying multiple experimental parameters such as the resistivity of the starting silicon wafer, the concentration of oxidant (H2O2) and the amount of silver catalyst. Our study shows a consistent trend that the porosity increases with the increasing wafer conductivity (dopant concentration) and oxidant (H2O2) concentration. We further demonstrate that silver ions, formed by the oxidation of silver, can diffuse upwards and re-nucleate on the sidewalls of nanowires to initiate new etching pathways to produce porous structure. The elucidation of this fundamental formation mechanism opens a rational pathway to the production of wafer-scale single crystalline porous silicon nanowires with tunable surface areas ranging from 370 m2·g−1 to 30 m2·g−1, and can enable exciting opportunities in catalysis, energy harvesting, conversion, storage, as well as biomedical imaging and therapy. PMID:21244020

Growth of InAs/InGaAs nanowires on GaAs(111)B substrates

Energy Technology Data Exchange (ETDEWEB)

Scholz, Sven; Schott, Ruediger; Ludwig, Arne; Wieck, Andreas D. [Lehrstuhl fuer Angewandte Festkoerperphysik, Ruhr-Universitaet Bochum (Germany); Reuter, Dirk [Arbeitsgruppe fuer optoelektronische Materialien und Bauelemente, Universitaet Paderborn (Germany)

2013-07-01

To investigate the structure and behavior of individual 1D-quantum structures, so called nanowires, we have grown single localized Au seeded InAs/InGaAs nanowires on GaAs(111)B substrate by molecular beam epitaxy. The Au-seeds are implanted by focused ion beam (FIB) technology. We developed a AuGa-LMIS to avoid the beam spread induced by using a Wien-Filter, which allows us to reduce the spot size of the focused ion beam and as consequence the number of implanted ions necessary to seed a wire. At present the growth of InAs nanowires is not fully understood and we have been working on optimizing the process. We identified an optimal growth temperature and arsenic to indium ratio for nanowire growth. Further investigations also aim at analyzing the influence of the growth rates and growth directions. We studied the morphology of the nanowires by SEM imaging and the optical properties with photoluminescence spectroscopy.

Structure and photoluminescence properties of ZnS-core/In2O3-shell one-dimensional nanowires

Science.gov (United States)

Park, Sunghoon; Lee, Jungkeun; Jeong, Bongyong; Lee, Wan In; Lee, Chongmu

2011-12-01

ZnS-core/In2O3-shell nanowires have been prepared by using a two-step process: the thermal evaporation of ZnS powders on Si(100) substrates coated with Au thin films and the sputter-deposition of In2O3. The ZnS nanowires were a few tens to a few hundreds of nanometers in diameter and up to a few hundreds of micrometers in length. ZnS nanowires have an emission band centered at around 570 nm in the yellow region. The yellow emission has been enhanced in intensity by coating the ZnS nanowires with In2O3 and further enhanced by annealing in a reducing atmosphere, but it is degraded by annealing in an oxidative atmosphere.

Effect of field deposition and pore size on Co/Cu barcode nanowires by electrodeposition

International Nuclear Information System (INIS)

Cho, Ji Ung; Wu, J.-H.; Min, Ji Hyun; Lee, Ju Hun; Liu, H.-L.; Kim, Young Keun

2007-01-01

We have studied the effect of an external magnetic field applied during electrodeposition of Co/Cu barcode nanowires in anodic aluminum oxide nanotemplates. The magnetic properties of the barcode nanowires were greatly enhanced for 50 nm pore diameter regardless of segment aspect ratio, but field deposition has little effect on the 200 nm nanowires. The magnetic improvement is correlated with a structural change, attributed to field modification of the growth habit of the barcode nanowires. A mechanism of growth subject to geometric confinement is proposed

Effect of field deposition and pore size on Co/Cu barcode nanowires by electrodeposition

Science.gov (United States)

Cho, Ji Ung; Wu, Jun-Hua; Min, Ji Hyun; Lee, Ju Hun; Liu, Hong-Ling; Kim, Young Keun

2007-03-01

We have studied the effect of an external magnetic field applied during electrodeposition of Co/Cu barcode nanowires in anodic aluminum oxide nanotemplates. The magnetic properties of the barcode nanowires were greatly enhanced for 50 nm pore diameter regardless of segment aspect ratio, but field deposition has little effect on the 200 nm nanowires. The magnetic improvement is correlated with a structural change, attributed to field modification of the growth habit of the barcode nanowires. A mechanism of growth subject to geometric confinement is proposed.

Are Microbial Nanowires Responsible for Geoelectrical Changes at Hydrocarbon Contaminated Sites?

Science.gov (United States)

Hager, C.; Atekwana, E. A.; Gorby, Y. A.; Duris, J. W.; Allen, J. P.; Atekwana, E. A.; Ownby, C.; Rossbach, S.

2007-05-01

Significant advances in near-surface geophysics and biogeophysics in particular, have clearly established a link between geoelectrical response and the growth and enzymatic activities of microbes in geologic media. Recent studies from hydrocarbon contaminated sites suggest that the activities of distinct microbial populations, specifically syntrophic, sulfate reducing, and dissimilatory iron reducing microbial populations are a contributing factor to elevated sediment conductivity. However, a fundamental mechanistic understanding of the processes and sources resulting in the measured electrical response remains uncertain. The recent discovery of bacterial nanowires and their electron transport capabilities suggest that if bacterial nanowires permeate the subsurface, they may in part be responsible for the anomalous conductivity response. In this study we investigated the microbial population structure, the presence of nanowires, and microbial-induced alterations of a hydrocarbon contaminated environment and relate them to the sediments' geoelectrical response. Our results show that microbial communities varied substantially along the vertical gradient and at depths where hydrocarbons saturated the sediments, ribosomal intergenic spacer analysis (RISA) revealed signatures of microbial communities adapted to hydrocarbon impact. In contrast, RISA profiles from a background location showed little community variations with depth. While all sites showed evidence of microbial activity, a scanning electron microscope (SEM) study of sediment from the contaminated location showed pervasive development of "nanowire-like structures" with morphologies consistent with nanowires from laboratory experiments. SEM analysis suggests extensive alteration of the sediments by microbial Activity. We conclude that, excess organic carbon (electron donor) but limited electron acceptors in these environments cause microorganisms to produce nanowires to shuttle the electrons as they seek for

Nanowire growth from the viewpoint of the thin film polylayer growth theory

Science.gov (United States)

Kashchiev, Dimo

2018-03-01

The theory of polylayer growth of thin solid films is employed for description of the growth kinetics of single-crystal nanowires. Expressions are derived for the dependences of the height h and radius r of a given nanowire on time t, as well as for the h(r) dependence. These dependences are applicable immediately after the nanowire nucleation on the substrate and thus include the period during which the nucleated nanowire changes its shape from that of cap to that of column. The analysis shows that the nanowire cap-to-column shape transition is continuous and makes it possible to kinetically define the nanowire shape-transition radius by means of the nanowire radial and axial growth rates. The obtained h(t), r(t) and h(r) dependences are found to provide a good description of available experimental data for growth of self-nucleated GaN nanowires by the vapor-solid mechanism.

Surface sensitization mechanism on negative electron affinity p-GaN nanowires

Science.gov (United States)

Diao, Yu; Liu, Lei; Xia, Sihao; Feng, Shu; Lu, Feifei

2018-03-01

The surface sensitization is the key to prepare negative electron affinity photocathode. The thesis emphasizes on the study of surface sensitization mechanism of p-type doping GaN nanowires utilizing first principles based on density function theory. The adsorption energy, work function, dipole moment, geometry structure, electronic structure and optical properties of Mg-doped GaN nanowires surfaces with various coverages of Cs atoms are investigated. The GaN nanowire with Mg doped in core position is taken as the sensitization base. At the initial stage of sensitization, the best adsorption site for Cs atom on GaN nanowire surface is BN, the bridge site of two adjacent N atoms. Surface sensitization generates a p-type internal surface with an n-type surface state, introducing a band bending region which can help reduce surface barrier and work function. With increasing Cs coverage, work functions decrease monotonously and the "Cs-kill" phenomenon disappears. For Cs coverage of 0.75 ML and 1 ML, the corresponding sensitization systems reach negative electron affinity state. Through surface sensitization, the absorption curves are red shifted and the absorption coefficient is cut down. All theoretical calculations can guide the design of negative electron affinity Mg doped GaN nanowires photocathode.

Excellent field emission properties of vertically oriented CuO nanowire films

Directory of Open Access Journals (Sweden)

Long Feng

2018-04-01

Full Text Available Oriented CuO nanowire films were synthesized on a large scale using simple method of direct heating copper grids in air. The field emission properties of the sample can be enhanced by improving the aspect ratio of the nanowires just through a facile method of controlling the synthesis conditions. Although the density of the nanowires is large enough, the screen effect is not an important factor in this field emission process because few nanowires sticking out above the rest. Benefiting from the unique geometrical and structural features, the CuO nanowire samples show excellent field emission (FE properties. The FE measurements of CuO nanowire films illustrate that the sample synthesized at 500 °C for 8 h has a comparatively low turn-on field of 0.68 V/μm, a low threshold field of 1.1 V/μm, and a large field enhancement factor β of 16782 (a record high value for CuO nanostructures, to the best of our knowledge, indicating that the samples are promising candidates for field emission applications.

Carbon−Silicon Core−Shell Nanowires as High Capacity Electrode for Lithium Ion Batteries

KAUST Repository

Cui, Li-Feng

2009-09-09

We introduce a novel design of carbon-silicon core-shell nanowires for high power and long life lithium battery electrodes. Amorphous silicon was coated onto carbon nanofibers to form a core-shell structure and the resulted core-shell nanowires showed great performance as anode material. Since carbon has a much smaller capacity compared to silicon, the carbon core experiences less structural stress or damage during lithium cycling and can function as a mechanical support and an efficient electron conducting pathway. These nanowires have a high charge storage capacity of ∼2000 mAh/g and good cycling life. They also have a high Coulmbic efficiency of 90% for the first cycle and 98-99.6% for the following cycles. A full cell composed of LiCoO2 cathode and carbon-silicon core-shell nanowire anode is also demonstrated. Significantly, using these core-shell nanowires we have obtained high mass loading and an area capacity of ∼4 mAh/cm2, which is comparable to commercial battery values. © 2009 American Chemical Society.

Silver nanowires as catalytic cathodes for stabilizing lithium-oxygen batteries

Science.gov (United States)

Kwak, Won-Jin; Jung, Hun-Gi; Lee, Seon-Hwa; Park, Jin-Bum; Aurbach, Doron; Sun, Yang-Kook

2016-04-01

Silver nanowires have been investigated as a catalytic cathode material for lithium-oxygen batteries. Their high aspect ratio contributes to the formation of a corn-shaped layer structure of the poorly crystalline lithium peroxide (Li2O2) nanoparticles produced by oxygen reduction in poly-ether based electrolyte solutions. The nanowire morphology seems to provide the necessary large contact area and facile electron supply for a very effective oxygen reduction reaction. The unique morphology and structure of the Li2O2 deposits and the catalytic nature of the silver nano-wires promote decomposition of Li2O2 at low potentials (below 3.4 V) upon the oxygen evolution. This situation avoids decomposition of the solution species and oxidation of the electrodes during the anodic (charge) reactions, leading to high electrical efficiently of lithium-oxygen batteries.

Growth mechanism of silver nanowires synthesized by polyvinylpyrrolidone-assisted polyol reduction

International Nuclear Information System (INIS)

Gao Yan; Jiang Peng; Song Li; Liu Lifeng; Yan Xiaoqin; Zhou Zhenping; Liu Dongfang; Wang Jianxiong; Yuan Huajun; Zhang Zengxing; Zhao Xiaowei; Dou Xinyuan; Zhou Weiya; Wang Gang; Xie Sishen

2005-01-01

Silver (Ag) nanowires with a pentagonal cross section have been synthesized by polyvinylpyrrolidone (PVP)-assisted polyol reduction in the presence of Pt nanoparticle seeds. The UV-visible absorption spectra and scanning electron microscopy have been used to trace the growth process of the Ag nanowires. X-ray photoelectron spectroscopy investigation further shows that the PVP molecules are adsorbed on the surface of the Ag nanowires through Ag : O coordination. Comparing with the growth process of Ag nanoparticles, a possible growth mechanism of the Ag nanowires has been proposed. It is implied that the PVP molecules are used as both a protecting agent and a structure-directing agent for the growth of Ag nanowires. It is concluded that the five-fold twinning Ag nanoparticles are formed through heterogenous nucleation after the introduction of Pt nanoparticle seeds and then grow anisotropically along the (110) direction, while the growth along (100) is relatively depressed

Linearly polarized emission from an embedded quantum dot using nanowire morphology control.

Science.gov (United States)

Foster, Andrew P; Bradley, John P; Gardner, Kirsty; Krysa, Andrey B; Royall, Ben; Skolnick, Maurice S; Wilson, Luke R

2015-03-11

GaAs nanowires with elongated cross sections are formed using a catalyst-free growth technique. This is achieved by patterning elongated nanoscale openings within a silicon dioxide growth mask on a (111)B GaAs substrate. It is observed that MOVPE-grown vertical nanowires with cross section elongated in the [21̅1̅] and [1̅12] directions remain faithful to the geometry of the openings. An InGaAs quantum dot with weak radial confinement is realized within each nanowire by briefly introducing indium into the reactor during nanowire growth. Photoluminescence emission from an embedded nanowire quantum dot is strongly linearly polarized (typically >90%) with the polarization direction coincident with the axis of elongation. Linearly polarized PL emission is a result of embedding the quantum dot in an anisotropic nanowire structure that supports a single strongly confined, linearly polarized optical mode. This research provides a route to the bottom-up growth of linearly polarized single photon sources of interest for quantum information applications.

Carbon−Silicon Core−Shell Nanowires as High Capacity Electrode for Lithium Ion Batteries

KAUST Repository

Cui, Li-Feng; Yang, Yuan; Hsu, Ching-Mei; Cui, Yi

2009-01-01

We introduce a novel design of carbon-silicon core-shell nanowires for high power and long life lithium battery electrodes. Amorphous silicon was coated onto carbon nanofibers to form a core-shell structure and the resulted core-shell nanowires

Unit cell structure of the wurtzite phase of GaP nanowires : X-ray diffraction studies and density functional theory calculations

OpenAIRE

Kriegner, D.; Assali, S.; Belabbes, A.; Etzelstorfer, T.; Holy, V.; Schülli, T.U.; Bechstedt, F.; Bakkers, E.P.A.M.; Bauer, G.; Stangl, J.

2013-01-01

We present structural characterization of the wurtzite crystal structure of GaP nanowires, which were recently shown to have a direct electronic band gap. The structural parameters of the wurtzite phase do consist of two lattice parameters and one internal degree of freedom, determining the Ga-P bond length along the c direction. Using density functional theory calculations, we study the influence of the internal degree of freedom on the band structure. By synchrotron x-ray diffraction studie...

Gas Sensors Based on Semiconducting Nanowire Field-Effect Transistors

Directory of Open Access Journals (Sweden)

Ping Feng

2014-09-01

Full Text Available One-dimensional semiconductor nanostructures are unique sensing materials for the fabrication of gas sensors. In this article, gas sensors based on semiconducting nanowire field-effect transistors (FETs are comprehensively reviewed. Individual nanowires or nanowire network films are usually used as the active detecting channels. In these sensors, a third electrode, which serves as the gate, is used to tune the carrier concentration of the nanowires to realize better sensing performance, including sensitivity, selectivity and response time, etc. The FET parameters can be modulated by the presence of the target gases and their change relate closely to the type and concentration of the gas molecules. In addition, extra controls such as metal decoration, local heating and light irradiation can be combined with the gate electrode to tune the nanowire channel and realize more effective gas sensing. With the help of micro-fabrication techniques, these sensors can be integrated into smart systems. Finally, some challenges for the future investigation and application of nanowire field-effect gas sensors are discussed.

Nanowires-based light emitters on thermally and electrically conductive substrates and of making same

KAUST Repository

Ooi, Boon S.; Zhao, Chao; Ng, Tien Khee

2017-01-01

Elemental or compound semiconductors on metal substrates and methods of growing them are provided. The methods can include the steps of: (i) providing a metal substrate; (ii) adding an interlayer on a surface of the metal substrate, and (iii) growing semiconductor nanowires on the interlayer using a semiconductor epitaxy growth system to form the elemental or compound semiconductor. The method can include direct growth of high quality group III-V and group III-N based materials in the form of nanowires and nanowires-based devices on metal substrates. The nanowires on all- metal scheme greatly simplifies the fabrication process of nanowires based high power light emitters.

Nanowires-based light emitters on thermally and electrically conductive substrates and of making same

KAUST Repository

Ooi, Boon S.

2017-04-27

Elemental or compound semiconductors on metal substrates and methods of growing them are provided. The methods can include the steps of: (i) providing a metal substrate; (ii) adding an interlayer on a surface of the metal substrate, and (iii) growing semiconductor nanowires on the interlayer using a semiconductor epitaxy growth system to form the elemental or compound semiconductor. The method can include direct growth of high quality group III-V and group III-N based materials in the form of nanowires and nanowires-based devices on metal substrates. The nanowires on all- metal scheme greatly simplifies the fabrication process of nanowires based high power light emitters.

Stability and electronic properties of SiC nanowire adsorbed on MoS{sub 2} monolayer

Energy Technology Data Exchange (ETDEWEB)

Sharma, Munish, E-mail: munishsharmahpu@live.com; Pooja,; Ahluwalia, P. K. [Department of Physics, Himachal Pradesh University, Shimla, H. P., 171005 (India); Kumar, Ashok [Department of Physics, Panjab University, Chandigarh, 160014 (India)

2015-06-24

Structural stability and electronic properties of silicon carbide (SiC) nano-wire on MoS{sub 2} monolayer are investigated within the framework of density functional theory (DFT). The preferred binding site for the SiC nano-wire is predicted to be hollow site of monolayer. In the electronic band structure the states in valence band near Fermi level are mainly due to nano-wire leading to reduction of band gap relative to monolayer. These results provide a platform for their applications in optoelectronic devices.

The ethylene glycol template assisted hydrothermal synthesis of Co3O4 nanowires; structural characterization and their application as glucose non-enzymatic sensor

International Nuclear Information System (INIS)

Khun, K.; Ibupoto, Z.H.; Liu, X.; Beni, V.; Willander, M.

2015-01-01

Highlights: • Ethylene glycol assisted Co 3 O 4 nanowires were synthesized by hydrothermal method. • The grown Co 3 O 4 nanowires were used for sensitive non-enzymatic glucose sensor. • The proposed glucose sensor shows a wide linear range with fast response. • The Co 3 O 4 modified electrode is a highly specific enzyme-less glucose sensor. - Abstract: In the work reported herein the ethylene glycol template assisted hydrothermal synthesis, onto Au substrate, of thin and highly dense cobalt oxide (Co 3 O 4 ) nanowires and their characterization and their application for non-enzymatic glucose sensing are reported. The structure and composition of Co 3 O 4 nanowires have been fully characterized using scanning electron microscopy, X-ray diffraction, high resolution transmission electron microscopy and X-ray photoelectron spectroscopy. The synthesized Co 3 O 4 nanowires resulted to have high purity and showed diameter of approximately 10 nm. The prepared Co 3 O 4 nanowires coated gold electrodes were applied to the non-enzymatic detection of glucose. The developed sensor showed high sensitivity (4.58 × 10 1 μA mM −1 cm −2 ), a wide linear range of concentration (1.00 × 10 −4 –1.2 × 10 1 mM) and a detection limit of 2.65 × 10 −5 mM. The developed glucose sensor has also shown to be very stable and selective over interferents such as uric acid and ascorbic acid. Furthermore, the proposed fabrication process was shown to be highly reproducible response (over nine electrodes)

Synthesis, structural and optical properties of pure and rare-earth ion doped TiO{sub 2} nanowire arrays by a facile hydrothermal technique

Energy Technology Data Exchange (ETDEWEB)

Bandi, Vengala Rao; Raghavan, Chinnambedu Murugesan; Grandhe, Bhaskar kumar; Kim, Sang Su [Department of Physics, Changwon National University, Changwon 641-773 (Korea, Republic of); Jang, Kiwan, E-mail: kwjang@changwon.ac.kr [Department of Physics, Changwon National University, Changwon 641-773 (Korea, Republic of); Shin, Dong-Soo [Department of Chemistry, Changwon National University, Changwon 641-773 (Korea, Republic of); Yi, Soung-Soo [Department of Photonics, Silla University, Busan 617-736 (Korea, Republic of); Jeong, Jung-Hyun [Department of Physics, Pukyong National University, Busan 608-737 (Korea, Republic of)

2013-11-29

Single crystalline pure and rare-earth metal ions (Eu{sup 3+} and Ce{sup 3+}) doped TiO{sub 2} nanowire arrays were prepared on conductive fluorine doped indium tin oxide substrates by a facile hydrothermal method. Initially the conditions and parameters were optimized to prepare the high quality TiO{sub 2} nanowire arrays in the absence of organic additives. The average diameter and length of the TiO{sub 2} nanowire were found to be ∼ 30–50 nm and ∼ 0.5–1.5 μm, respectively. The formations of rutile phase structure in all the samples were confirmed by x-ray diffractometric analysis while the transmission electron microscopy confirms the single crystallinity and the maximum orientation of growth direction along [001] for the as-grown TiO{sub 2} nanowire. The optical properties of all the samples were analyzed using photoluminescence spectroscopy. The photocatalytic properties of the pure and doped TiO{sub 2} were investigated for the decomposition of organic toludine blue-O dye under ultraviolet irradiation. The result demonstrates that the Ce{sup 3+}: TiO{sub 2} decomposed almost 90% of the organic dye within 80 min. - Highlights: • Rare-earth (RE) doped TiO{sub 2} nanowire arrays were prepared by hydrothermal method • RE doping enhanced the growth rate of TiO{sub 2} nanowire arrays • The catalysts used to check their photocatalytic activity by toludine blue-O dye • RE doped TiO2 act as unprecedented photocatalyst for organic dye decomposition.

Enhancing ionic conductivity in composite polymer electrolytes with well-aligned ceramic nanowires

Science.gov (United States)

Liu, Wei; Lee, Seok Woo; Lin, Dingchang; Shi, Feifei; Wang, Shuang; Sendek, Austin D.; Cui, Yi

2017-04-01

In contrast to conventional organic liquid electrolytes that have leakage, flammability and chemical stability issues, solid electrolytes are widely considered as a promising candidate for the development of next-generation safe lithium-ion batteries. In solid polymer electrolytes that contain polymers and lithium salts, inorganic nanoparticles are often used as fillers to improve electrochemical performance, structure stability, and mechanical strength. However, such composite polymer electrolytes generally have low ionic conductivity. Here we report that a composite polymer electrolyte with well-aligned inorganic Li+-conductive nanowires exhibits an ionic conductivity of 6.05 × 10-5 S cm-1 at 30 ∘C, which is one order of magnitude higher than previous polymer electrolytes with randomly aligned nanowires. The large conductivity enhancement is ascribed to a fast ion-conducting pathway without crossing junctions on the surfaces of the aligned nanowires. Moreover, the long-term structural stability of the polymer electrolyte is also improved by the use of nanowires.

Electrochemical synthesis and characterization of hierarchically branched ZnO nanostructures on ensembles of gold nanowires

International Nuclear Information System (INIS)

Ongaro, Michael; Gambirasi, Arianna; Favaro, Monica; Ugo, Paolo

2012-01-01

Highlights: ► ZnO branched nanofibres for photoelectrochemical applications. ► Branched nanostructures are obtained by electrochemical deposition of ZnO on gold template nanowires. ► Branched nanowires crystallographic phase determined by electron back scatter diffraction. ► Branched structures display improved performances for the photoelectrochemical oxidation of water. - Abstract: This study presents an electrosynthetic methodology to obtain hierarchically structured ZnO electrodes with improved surface area, by exploiting gold nanowires ensembles (3D-NEEs) as the growing substrate. By this way, semiconductor electrodes organized in the shape of fir-like branches are obtained. Branched nanofibres are characterized by electron microscopy and electron backscatter diffraction (EBSD), the latter technique allowing the determination of the crystalline habit of individual nanostructures. The hierarchical branched nanowires show enhanced performances with respect to water photooxidation in comparison with already known nanostructured materials such as 1D-ZnO nanowires.

Thermal transport contributed by the torsional phonons in cylindrical nanowires: Role of evanescent modes

International Nuclear Information System (INIS)

Xie, Zhong-Xiang; Zhang, Yong; Zhang, Li-Fu; Fan, Dian-Yuan

2017-01-01

Thermal transport contributed by the torsional phonons in cylindrical nanowires is investigated by using the isotropic elastic continuum theory. The numerical calculations for both the concavity-shaped and convexity-shaped cylindrical structures are made to reveal the role of the evanescent modes. Results show that the evanescent modes play an important role in influencing the thermal transport in such structures. For the concavity-shaped cylindrical nanowire, the evanescent modes can enhance the thermal conductance by about 20 percent, while for the convexity-shaped cylindrical nanowire, the evanescent modes can suppress the thermal conductance by 6 percent. It is also shown that the influence of the evanescent modes on the thermal conductance is strongly related to the attenuation length of the evanescent modes. A brief analysis of these results is given. - Highlights: • The evanescent modes play an important role in influencing thermal transport contributed by torsional phonons in cylindrical nanowires. • For the concavity-shaped cylindrical nanowire, the evanescent modes can enhance the thermal conductance by about 20 percent, while for the convexity-shaped cylindrical nanowire, they can suppress the thermal conductance by 6 percent.

Thermal transport contributed by the torsional phonons in cylindrical nanowires: Role of evanescent modes

Energy Technology Data Exchange (ETDEWEB)

Xie, Zhong-Xiang [SZU-NUS Collaborative Innovation Center for Optoelectronic Science Technology, International Collaborative Laboratory of 2D Materials for Optoelectronic Science & Technology, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Optoelectronic Engineering, Shenzhen University, Shenzhen 518060 (China); Department of Mathematics and Physics, Hunan Institute of Technology, Hengyang 421002 (China); Zhang, Yong [Department of Mathematics and Physics, Hunan Institute of Technology, Hengyang 421002 (China); Zhang, Li-Fu, E-mail: zhanglifu68@hotmail.com [SZU-NUS Collaborative Innovation Center for Optoelectronic Science Technology, International Collaborative Laboratory of 2D Materials for Optoelectronic Science & Technology, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Optoelectronic Engineering, Shenzhen University, Shenzhen 518060 (China); Fan, Dian-Yuan [SZU-NUS Collaborative Innovation Center for Optoelectronic Science Technology, International Collaborative Laboratory of 2D Materials for Optoelectronic Science & Technology, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Optoelectronic Engineering, Shenzhen University, Shenzhen 518060 (China)

2017-05-03

Thermal transport contributed by the torsional phonons in cylindrical nanowires is investigated by using the isotropic elastic continuum theory. The numerical calculations for both the concavity-shaped and convexity-shaped cylindrical structures are made to reveal the role of the evanescent modes. Results show that the evanescent modes play an important role in influencing the thermal transport in such structures. For the concavity-shaped cylindrical nanowire, the evanescent modes can enhance the thermal conductance by about 20 percent, while for the convexity-shaped cylindrical nanowire, the evanescent modes can suppress the thermal conductance by 6 percent. It is also shown that the influence of the evanescent modes on the thermal conductance is strongly related to the attenuation length of the evanescent modes. A brief analysis of these results is given. - Highlights: • The evanescent modes play an important role in influencing thermal transport contributed by torsional phonons in cylindrical nanowires. • For the concavity-shaped cylindrical nanowire, the evanescent modes can enhance the thermal conductance by about 20 percent, while for the convexity-shaped cylindrical nanowire, they can suppress the thermal conductance by 6 percent.

Passive high-frequency devices based on superlattice ferromagnetic nanowires

International Nuclear Information System (INIS)

Ye, B.; Li, F.; Cimpoesu, D.; Wiley, J.B.; Jung, J.-S.; Stancu, A.; Spinu, L.

2007-01-01

In this paper we propose to tailor the bandwidth of a microwave filter by exploitation of shape anisotropy of nanowires. In order to achieve this control of shape anisotropy, we considered superlattice wires containing varying-sized ferromagnetic regions separated by nonferromagnetic regions. Superlattice wires of Ni and Au with a nominal diameter of 200 nm were grown using standard electrodeposition techniques. The microwave properties were probed using X-band (9.8 GHz) ferromagnetic resonance (FMR) experiments performed at room temperature. In order to investigate the effectiveness of the shape anisotropy on the superlattice nanowire based filter the FMR spectrum of superlattice structure is compared to the FMR spectra of nanowires samples with constant length

Manipulation and Investigation of Uniformly-Spaced Nanowire Array on a Substrate via Dielectrophoresis and Electrostatic Interaction

Directory of Open Access Journals (Sweden)

U Hyeok Choi

2018-06-01

Full Text Available Directed-assembly of nanowires on the dielectrics-covered parallel electrode structure is capable of producing uniformly-spaced nanowire array at the electrode gap due to dielectrophoretic nanowire attraction and electrostatic nanowire repulsion. Beyond uniformly-spaced nanowire array formation, the control of spacing in the array is beneficial in that it should be the experimental basis of the precise positioning of functional nanowires on a circuit. Here, we investigate the material parameters and bias conditions to modulate the nanowire spacing in the ordered array, where the nanowire array formation is readily attained due to the electrostatic nanowire interaction. A theoretical model for the force calculation and the simulation of the induced charge in the assembled nanowire verifies that the longer nanowires on thicker dielectric layer tend to be assembled with a larger pitch due to the stronger nanowire-nanowire electrostatic repulsion, which is consistent with the experimental results. It was claimed that the stronger dielectrophoretic force is likely to attract more nanowires that are suspended in solution at the electrode gap, causing them to be less-spaced. Thus, we propose a generic mechanism, competition of dielectrophoretic and electrostatic force, to determine the nanowire pitch in an ordered array. Furthermore, this spacing-controlled nanowire array offers a way to fabricate the high-density nanodevice array without nanowire registration.

Electroluminescence from single nanowires by tunnel injection: an experimental study

International Nuclear Information System (INIS)

Zimmler, Mariano A; Bao Jiming; Shalish, Ilan; Yi, Wei; Yoon, Joonah; Narayanamurti, Venkatesh; Capasso, Federico

2007-01-01

We present a hybrid light-emitting diode structure composed of an n-type gallium nitride nanowire on a p-type silicon substrate in which current is injected along the length of the nanowire. The device emits ultraviolet light under both bias polarities. Tunnel injection of holes from the p-type substrate (under forward bias) and from the metal (under reverse bias) through thin native oxide barriers consistently explains the observed electroluminescence behaviour. This work shows that the standard p-n junction model is generally not applicable to this kind of device structure

DC electrodeposition of NiGa alloy nanowires in AAO template

Energy Technology Data Exchange (ETDEWEB)

Maleki, K. [Nanomaterials Group, Department of Materials Engineering, Tarbiat Modares University, Iran, P.O. Box: 14115-143, Tehran (Iran, Islamic Republic of); Sanjabi, S., E-mail: sanjabi@modares.ac.ir [Nanomaterials Group, Department of Materials Engineering, Tarbiat Modares University, Iran, P.O. Box: 14115-143, Tehran (Iran, Islamic Republic of); Alemipour, Z. [Department of Physics, University of Kurdistan, Sanandaj (Iran, Islamic Republic of)

2015-12-01

NiGa alloy nanowires were electrodeposited from an acidic sulfate bath into nanoporous anodized alumina oxide (AAO). This template was fabricated by two-step anodizing. The effects of bath composition and current density were explored on the Ga content of electrodeposited nanowires. The Ga content in the deposits was increased by increasing both Ga in the bath composition and electrodepositing current density. The NiGa alloy nanowires were synthesized for Ga content up to 2–4% without significant improving the magnetic properties. Above this threshold Ga clusters were formed and decreased the magnetic properties of the nanowires. For Ga content of the alloy above 30%, the wires were too short and incomplete. X-ray diffraction patterns reveal that the significant increase of Ga content in the nanowires, changes the FCC crystal structure of Ni to an amorphous phase. It also causes a sizeable increase in the Ga cluster size; these both lead to a significant reduction in the coercivity and the magnetization respectively. - Highlights: • NiGa alloy nanowires were electrodeposited from acidic sulphate baths into nanoporous anodized alumina oxide (AAO) template. • The Ga content was increased by increasing the Ga in the bath composition and electrodeposition current density. • The magnetic parameters such as coercivity and magnetization were not changed for the alloy nanowire with Ga content less than 4%.

CdS nanowires formed by chemical synthesis using conjugated single-stranded DNA molecules

Science.gov (United States)

Sarangi, S. N.; Sahu, S. N.; Nozaki, S.

2018-03-01

CdS nanowires were successfully grown by chemical synthesis using two conjugated single-stranded (ss) DNA molecules, poly G (30) and poly C (30), as templates. During the early stage of the synthesis with the DNA molecules, the Cd 2+ interacts with Poly G and Poly C and produces the (Cd 2+)-Poly GC complex. As the growth proceeds, it results in nanowires. The structural analysis by grazing angle x-ray diffraction and transmission electron microscopy confirmed the zinc-blende CdS nanowires with the growth direction of . Although the nanowires are well surface-passivated with the DNA molecules, the photoluminescence quenching was caused by the electron transfer from the nanowires to the DNA molecules. The quenching can be used to detect and label the DNAs.

Properties of Fe{sub 8−N}Co{sub N} nanoribbons and nanowires: A DFT approach

Energy Technology Data Exchange (ETDEWEB)

Muñoz, Francisco [Max Planck Institute of Microstructure Physics, Weinberg 2, 06120 Halle (Germany); Departamento de Física, Facultad de Ciencias, Universidad de Chile, Casilla 653, Santiago 7800024 (Chile); Centro para el Desarrollo de la Nanociencia y la Nanotecnología, CEDENNA, Avda. Ecuador 3493, Santiago 9170124 (Chile); Altbir, D. [Centro para el Desarrollo de la Nanociencia y la Nanotecnología, CEDENNA, Avda. Ecuador 3493, Santiago 9170124 (Chile); Departamento de Física, Universidad de Santiago (Chile); Kiwi, Miguel, E-mail: m.kiwi.t@gmail.com [Departamento de Física, Facultad de Ciencias, Universidad de Chile, Casilla 653, Santiago 7800024 (Chile); Centro para el Desarrollo de la Nanociencia y la Nanotecnología, CEDENNA, Avda. Ecuador 3493, Santiago 9170124 (Chile); Morán-López, J.L. [Departamento de Física, Laboratorio Interdisciplinario, Facultad de Ciencias, Universidad Nacional Autónoma de México, México, D.F. (Mexico)

2013-08-15

The structural configurations and magnetic properties of zig-zag nanoribbons and nanowires of Fe{sub 8−N}Co{sub N}, for 0≤N≤8, are calculated within the density functional theory. Both, for the zig-zag nanoribbons and the nanowires, there is a tendency towards forming Fe–Co bonds, while segregation of the Fe and Co is energetically unfavorable. For the nanowire structures a transition from bcc Fe to hcp Co spatial arrangements is observed when N is increased from 4 to 6, in spite of the small size of the systems under investigation. The energy minimization was performed taking into consideration the electronic and magnetic structures, since for each crystalline structure, chemical composition, and short range order, particular magnetic properties of these systems do correspond. The magnetocrystalline anisotropy energy is calculated, and it is found that the easy axis changes from a transverse direction in Fe-rich systems, to the axial direction as the Co concentration increases. It is also found that although there are important variations of the local magnetic moment of the components, and their particular location in the system, the average magnetic moment is an almost linear function of N. - Highlights: ► Properties of Fe{sub 8−N}Co{sub N} nanoribbons and nanowires are calculated ab initio. ► Structural and magnetic properties of nanoribbons and nanowires are calculated. ► Shape and crystalline anisotropies of nanoribbons and nanowires are contrasted.

Optical Control of Internal Electric Fields in Band Gap-Graded InGaN Nanowires

Science.gov (United States)

Erhard, N.; Sarwar, A. T. M. Golam; Yang, F.; McComb, D. W.; Myers, R. C.; Holleitner, A. W.

2015-01-01

InGaN nanowires are suitable building blocks for many future optoelectronic devices. We show that a linear grading of the indium content along the nanowire axis from GaN to InN introduces an internal electric field evoking a photocurrent. Consistent with quantitative band structure simulations we observe a sign change in the measured photocurrent as a function of photon flux. This negative differential photocurrent opens the path to a new type of nanowire-based photodetector. We demonstrate that the photocurrent response of the nanowires is as fast as 1.5 ps.

Controlled Growth of Rubrene Nanowires by Eutectic Melt Crystallization

Science.gov (United States)

Chung, Jeyon; Hyon, Jinho; Park, Kyung-Sun; Cho, Boram; Baek, Jangmi; Kim, Jueun; Lee, Sang Uck; Sung, Myung Mo; Kang, Youngjong

2016-03-01

Organic semiconductors including rubrene, Alq3, copper phthalocyanine and pentacene are crystallized by the eutectic melt crystallization. Those organic semiconductors form good eutectic systems with the various volatile crystallizable additives such as benzoic acid, salicylic acid, naphthalene and 1,3,5-trichlorobenzene. Due to the formation of the eutectic system, organic semiconductors having originally high melting point (Tm > 300 °C) are melted and crystallized at low temperature (Te = 40.8-133 °C). The volatile crystallizable additives are easily removed by sublimation. For a model system using rubrene, single crystalline rubrene nanowires are prepared by the eutectic melt crystallization and the eutectic-melt-assisted nanoimpinting (EMAN) technique. It is demonstrated that crystal structure and the growth direction of rubrene can be controlled by using different volatile crystallizable additives. The field effect mobility of rubrene nanowires prepared using several different crystallizable additives are measured and compared.

A soft chemical route to multicomponent lithium transition metal oxide nanowires as promising cathode materials for lithium secondary batteries

International Nuclear Information System (INIS)

Park, Dae-Hoon; Lim, Seung-Tae; Hwang, Seong-Ju

2006-01-01

We have synthesized 1D nanowires of lithium nickel manganese oxides with two different crystal structures through the chemical oxidation reaction of solid-state precursor LiMn 0.5 Ni 0.5 O 2 under hydrothermal condition. According to X-ray diffraction and elemental analyses, the nanowires obtained by persulfate treatments at 65 and 120 deg. C crystallize with a hexagonal layered and an α-MnO 2 -type structure, respectively, in which nickel and manganese ions exist in octahedral sites. Electron microscopic analyses reveal that the platelike crystallites of the precursor are changed into nanowires with the diameter of ∼20 nm after the persulfate treatment. Thermal and infrared spectroscopic analyses clearly demonstrate that, in comparison with α-MnO 2 -structured nanowires, the hexagonal layered nanowires contain less water molecules in the lattice, which makes them suitable for the application as electrode materials for lithium secondary batteries. According to electrochemical measurements, the hexagonal layered nanowires show a larger discharge capacity and an excellent cyclability with respect to repeated Li intercalation-disintercalation process. X-ray diffraction and electron microscopic analyses on the samples subjected to electrochemical analysis reveal that the layered structure and 1D morphology of the nanowires are still maintained after the electrochemical cyclings, which is responsible for their excellent electrochemical performances

ON current enhancement of nanowire Schottky barrier tunnel field effect transistors

Science.gov (United States)

Takei, Kohei; Hashimoto, Shuichiro; Sun, Jing; Zhang, Xu; Asada, Shuhei; Xu, Taiyu; Matsukawa, Takashi; Masahara, Meishoku; Watanabe, Takanobu

2016-04-01

Silicon nanowire Schottky barrier tunnel field effect transistors (NW-SBTFETs) are promising structures for high performance devices. In this study, we fabricated NW-SBTFETs to investigate the effect of nanowire structure on the device characteristics. The NW-SBTFETs were operated with a backgate bias, and the experimental results demonstrate that the ON current density is enhanced by narrowing the width of the nanowire. We confirmed using the Fowler-Nordheim plot that the drain current in the ON state mainly comprises the quantum tunneling component through the Schottky barrier. Comparison with a technology computer aided design (TCAD) simulation revealed that the enhancement is attributed to the electric field concentration at the corners of cross-section of the NW. The study findings suggest an effective approach to securing the ON current by Schottky barrier width modulation.

Tunneling and Transport in Nanowires

International Nuclear Information System (INIS)

Goldman, Allen M.

2016-01-01

The goal of this program was to study new physical phenomena that might be relevant to the performance of conductive devices and circuits of the smallest realizable feature sizes possible using physical rather than biological techniques. Although the initial scientific work supported involved the use of scanning tunneling microscopy and spectroscopy to ascertain the statistics of the energy level distribution of randomly sized and randomly shaped quantum dots, or nano-crystals, the main focus was on the investigation of selected properties, including superconductivity, of conducting and superconducting nanowires prepared using electron-beam-lithography. We discovered a magnetic-field-restoration of superconductivity in out-of-equilibrium nanowires driven resistive by current. This phenomenon was explained by the existence of a state in which dissipation coexisted with nonvanishing superconducting order. We also produced ultra-small superconducting loops to study a predicted anomalous fluxoid quantization, but instead, found a magnetic-field-dependent, high-resistance state, rather than superconductivity. Finally, we developed a simple and controllable nanowire in an induced charged layer near the surface of a masked single-crystal insulator, SrTiO_3. The layer was induced using an electric double layer transistor employing an ionic liquid (IL). The transport properties of the induced nanowire resembled those of collective electronic transport through an array of quantum dots.

Amber light-emitting diode comprising a group III-nitride nanowire active region

Science.gov (United States)

Wang, George T.; Li, Qiming; Wierer, Jr., Jonathan J.; Koleske, Daniel

2014-07-22

A temperature stable (color and efficiency) III-nitride based amber (585 nm) light-emitting diode is based on a novel hybrid nanowire-planar structure. The arrays of GaN nanowires enable radial InGaN/GaN quantum well LED structures with high indium content and high material quality. The high efficiency and temperature stable direct yellow and red phosphor-free emitters enable high efficiency white LEDs based on the RGYB color-mixing approach.

Broad spectral response photodetector based on individual tin-doped CdS nanowire

Directory of Open Access Journals (Sweden)

Weichang Zhou

2014-12-01

Full Text Available High purity and tin-doped 1D CdS micro/nano-structures were synthesized by a convenient thermal evaporation method. SEM, EDS, XRD and TEM were used to examine the morphology, composition, phase structure and crystallinity of as-prepared samples. Raman spectrum was used to confirm tin doped into CdS effectively. The effect of impurity on the photoresponse properties of photodetectors made from these as-prepared pure and tin-doped CdS micro/nano-structures under excitation of light with different wavelength was investigated. Various photoconductive parameters such as responsivity, external quantum efficiency, response time and stability were analyzed to evaluate the advantage of doped nanowires and the feasibility for photodetector application. Comparison with pure CdS nanobelt, the tin-doped CdS nanowires response to broader spectral range while keep the excellect photoconductive parameters. Both trapped state induced by tin impurity and optical whispering gallery mode microcavity effect in the doped CdS nanowires contribute to the broader spectral response. The micro-photoluminescence was used to confirm the whispering gallery mode effect and deep trapped state in the doped CdS nanowires.

Global optimization of silicon nanowires for efficient parametric processes

DEFF Research Database (Denmark)

Vukovic, Dragana; Xu, Jing; Mørk, Jesper

2013-01-01

We present a global optimization of silicon nanowires for parametric single-pump mixing. For the first time, the effect of surface roughness-induced loss is included in the analysis, significantly influencing the optimum waveguide dimensions.......We present a global optimization of silicon nanowires for parametric single-pump mixing. For the first time, the effect of surface roughness-induced loss is included in the analysis, significantly influencing the optimum waveguide dimensions....

Photoluminescence Polarization Anisotropy in a Single Heterostructured III-V Nanowire with Mixed Crystal Phases

International Nuclear Information System (INIS)

Moses, A. F.; Hoang, T. B.; Ahtapodov, L.; Dheeraj, D. L.; Fimland, B. O.; Weman, H.; Helvoort, A. T. J. van

2011-01-01

Low temperature (10 K) micro-photoluminescence (μ-PL) of single GaAs/AlGaAs core-shell nanowires with single GaAsSb inserts were measured. The PL emission from the zinc blende GaAsSb insert is strongly polarized along the nanowire axis while the PL emission from the wurtzite GaAs nanowire is perpendiculary polarized to the nanowire axis. The result indicates that the crystal phase, through the optical selection rules, has significant effect on the polarization of the PL from NWs besides the dielectric mismatch. The analysis of the PL results based on the electronic structure of these nanowires supports the correlation between the crystal phase and the PL emission.

Electrochemical Investigation on the Formation of Cu Nanowires by Electroless Deposition

Directory of Open Access Journals (Sweden)

Felizco Jenichi Clairvaux E.

2015-01-01

Full Text Available The growth of copper (Cu nanowires by electroless deposition in aqueous solution at 60-80 °C was studied from an electrochemical perspective using in situ mixed potential measurements and potential-pH diagrams. Scanning Electron Microscopy (SEM showed that thick and short nanowires were obtained at high temperatures, while long and thin nanowires result from low reaction temperatures. In situ mixed potential measurements reveal that Cu(II reduction is more favored at higher reaction temperatures, hastening the reduction reaction. The fast reaction leads to a high concentration of Cu atoms in the solution. As a result, Cu deposition occurs rapidly, such that they attached on both sides and ends of the primary Cu nanowires. This results to the formation of thick and short structures. On the other hand, thin and long nanowires are obtained due to the slow reduction reaction, which gives the Cu atoms more time to orderly attach in a wire-like formation.

Fabrication of CdS nanowires with increasing anionic precursor by SILAR method

Science.gov (United States)

Dariani, R. S.; Salehi, F.

2016-05-01

CdS nanowires were fabricated on glass substrate at room temperature by SILAR method with cadmium nitrate cationic and sodium sulfide anionic precursors. The deposition were done at different S:Cd concentration ratios of 1:1, 3:1, 5:1, and 7:1. Nanowires growth procedure was studied in the mentioned concentrations. The number of immersion cycles was kept constant at 15 cycles. EDX analysis showed that in all stoichiometric ratios, S/Cd composition ratio remains at about unity. Our results indicated that S:Cd concentration ratio of 7:1 had the longest nanowires with hexagonal structure. The main objective of this paper was to produce CdS nanowires with increasing concentration of sulfur.

Room-temperature solution synthesis of Ag nanoparticle functionalized molybdenum oxide nanowires and their catalytic applications

International Nuclear Information System (INIS)

Dong Wenjun; Huang Huandi; Zhu Yanjun; Li Xiaoyun; Wang Xuebin; Li Chaorong; Chen Benyong; Wang Ge; Shi Zhan

2012-01-01

A simple chemical solution route for the synthesis of large-scale high-quality Ag nanoparticle functionalized molybdenum oxide nanowire at room temperature has been developed. In the synthesis, the protonated amine was intercalated into the molybdenum bronze layers to reduce the electrostatic force of the lamellar structures, and then the Ag nanoparticle functionalized long nanowires could be easily induced by a redox reaction between a molybdenum oxide–amine intermediate and Ag + at room temperature. The intercalation lamellar structures improved the nucleation and growth of the Ag nanoparticles, with the result that uniform Ag nanoparticles occurred on the surface of the MoO 3 nanowire. In this way Ag nanoparticles with average sizes of around 6 nm, and high-purity nanowires with mean diameter of around 50 nm and with typical lengths of several tens to hundreds of micrometers were produced. The heteronanostructured nanowires were intricately and inseparably connected to each other with hydrogen bonds and/or bridge oxygen atoms and packed together, forming a paper-like porous network film. The Ag–MoO 3 nanowire film performs a promoted catalytic property for the epoxidation of cis-cyclooctene, and the heteronanostructured nanowire film sensor shows excellent sensing performance to hydrogen and oxygen at room temperature. (paper)

Room-temperature solution synthesis of Ag nanoparticle functionalized molybdenum oxide nanowires and their catalytic applications.

Science.gov (United States)

Dong, Wenjun; Huang, Huandi; Zhu, Yanjun; Li, Xiaoyun; Wang, Xuebin; Li, Chaorong; Chen, Benyong; Wang, Ge; Shi, Zhan

2012-10-26

A simple chemical solution route for the synthesis of large-scale high-quality Ag nanoparticle functionalized molybdenum oxide nanowire at room temperature has been developed. In the synthesis, the protonated amine was intercalated into the molybdenum bronze layers to reduce the electrostatic force of the lamellar structures, and then the Ag nanoparticle functionalized long nanowires could be easily induced by a redox reaction between a molybdenum oxide-amine intermediate and Ag(+) at room temperature. The intercalation lamellar structures improved the nucleation and growth of the Ag nanoparticles, with the result that uniform Ag nanoparticles occurred on the surface of the MoO(3) nanowire. In this way Ag nanoparticles with average sizes of around 6 nm, and high-purity nanowires with mean diameter of around 50 nm and with typical lengths of several tens to hundreds of micrometers were produced. The heteronanostructured nanowires were intricately and inseparably connected to each other with hydrogen bonds and/or bridge oxygen atoms and packed together, forming a paper-like porous network film. The Ag-MoO(3) nanowire film performs a promoted catalytic property for the epoxidation of cis-cyclooctene, and the heteronanostructured nanowire film sensor shows excellent sensing performance to hydrogen and oxygen at room temperature.

Polarized recombination of acoustically transported carriers in GaAs nanowires

Science.gov (United States)

Möller, Michael; Hernández-Mínguez, Alberto; Breuer, Steffen; Pfüller, Carsten; Brandt, Oliver; de Lima, Mauricio M.; Cantarero, Andrés; Geelhaar, Lutz; Riechert, Henning; Santos, Paulo V.

2012-05-01

The oscillating piezoelectric field of a surface acoustic wave (SAW) is employed to transport photoexcited electrons and holes in GaAs nanowires deposited on a SAW delay line on a LiNbO3 crystal. The carriers generated in the nanowire by a focused light spot are acoustically transferred to a second location where they recombine. We show that the recombination of the transported carriers occurs in a zinc blende section on top of the predominant wurtzite nanowire. This allows contactless control of the linear polarized emission by SAWs which is governed by the crystal structure. Additional polarization-resolved photoluminescence measurements were performed to investigate spin conservation during transport.

Growth and properties of In(Ga)As nanowires on silicon

International Nuclear Information System (INIS)

Hertenberger, Simon

2012-01-01

by TEM and XRD analysis revealing a disordered wurtzite (WZ) structure with stacking faults occurring every few monolayers to nanometers for InAs nanowires grown under different As/In ratios. However, the nanowire growth temperature is found to influence the crystal structure more significantly, such that longer phase pure WZ segments up to lengths of >10 nm are observed for elevated growth temperatures (≥530 C). Furthermore, InAs nanowire ensembles with different diameter (40-135 nm) are investigated by low-temperature PL spectroscopy. The nanowires show relatively strong emission efficiency, characteristic red-shift with temperature and low-temperature band-edge energy position of ∝0.41 eV for thick nanowires. Reduction in nanowire diameter yields a characteristic blue-shift which is related to quantum confinement effects as confirmed by simulations. The good control about In(Ga)As nanowire growth on Si and the obtained understanding of important physical properties as discussed in this thesis provide a valuable basis for the development of effective high-quality nanowire-based devices.

Growth and properties of In(Ga)As nanowires on silicon

Energy Technology Data Exchange (ETDEWEB)

Hertenberger, Simon

2012-10-15

microstructure are investigated by TEM and XRD analysis revealing a disordered wurtzite (WZ) structure with stacking faults occurring every few monolayers to nanometers for InAs nanowires grown under different As/In ratios. However, the nanowire growth temperature is found to influence the crystal structure more significantly, such that longer phase pure WZ segments up to lengths of >10 nm are observed for elevated growth temperatures (≥530 C). Furthermore, InAs nanowire ensembles with different diameter (40-135 nm) are investigated by low-temperature PL spectroscopy. The nanowires show relatively strong emission efficiency, characteristic red-shift with temperature and low-temperature band-edge energy position of ∝0.41 eV for thick nanowires. Reduction in nanowire diameter yields a characteristic blue-shift which is related to quantum confinement effects as confirmed by simulations. The good control about In(Ga)As nanowire growth on Si and the obtained understanding of important physical properties as discussed in this thesis provide a valuable basis for the development of effective high-quality nanowire-based devices.

Controlled synthesis of uniform ultrafine CuO nanowires as anode material for lithium-ion batteries

International Nuclear Information System (INIS)

Wang Fei; Tao Weizhe; Zhao Mingshu; Xu Minwei; Yang Shengchun; Sun Zhanbo; Wang Liqun; Song Xiaoping

2011-01-01

Highlights: → The ultrafine CuO nanowires were controlled synthesized by a simple solution route. → CuO nanowires exhibit high capacity, superior cyclability and improved rate capability. → Voltage-capacity curves show larger extra reversible reactions at low potentials in CuO nanowires. → CV curves show lower over-potential in CuO nanowires. - Abstract: A simple solution route is used to synthesize ultrafine Cu(OH) 2 nanowires by restraining the morphology transformation of early formed 1D nanostructure. The obtained ultrafine nanowires can be well preserved at a low temperature structure transformation in solid state. As anode material for lithium-ion batteries, the ultrafine CuO nanowires exhibit high reversible capacity, superior cycling performance and improved rate capability. The improved electrochemical properties of CuO nanowires are ascribed to their ultrafine size which lead to the reduced over-potential, extra reversible reactions at low potentials and improved interface performance between the electrode and electrolyte.

Dopant-free twinning superlattice formation in InSb and InP nanowires

Energy Technology Data Exchange (ETDEWEB)

Yuan, Xiaoming [School of Physics and Electronics, Hunan Key Laboratory for Supermicrostructure and Ultrafast Process, Central South University, Changsha, Hunan (China); Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University, Canberra, ACT (Australia); Guo, Yanan; Caroff, Philippe; Tan, Hark Hoe; Jagadish, Chennupati [Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University, Canberra, ACT (Australia); He, Jun [School of Physics and Electronics, Hunan Key Laboratory for Supermicrostructure and Ultrafast Process, Central South University, Changsha, Hunan (China)

2017-11-15

Periodic arrangement of twin planes creates a controllable polytype that can affect both the electronic and optical properties of nanowires. The approach that is most used for inducing twinning superlattice (TSL) formation in III-V nanowires is introducing impurity dopants during growth. Here, we demonstrate that controlling the growth parameters is sufficient to produce regular twinning planes in Au-catalysed InSb and InP nanowires. Our results show that TSL formation in InSb nanowires only exists in a very narrow growth window. We suggest that growth conditions induce a high concentration of In (or Sb) in the Au droplet, which plays a similar role to that of surfactant impurities such as Zn, and increases the droplet wetting angle to yield a geometry that is favorable for TSL formation. The demonstration of TSL structure in InSb and InP nanowires by controlling the input of In (or Sb) further enhances fundamental understanding of TSL formation in III-V nanowires and allows us to tune the properties of these nanowires by crystal phase engineering. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)