Study into non-quasibinary sections of Pr2S3-Bi2S3-Pr2O3 triple system (Bi2S3)0. 45(Pr2O3)0. 55 - (Bi2S3)0. 45(Pr2S3)0. 55 and (Bi2S3)0. 75 (Pr2S3)0. 25 - (Bi2S3)0. 75(Pr2O3)0. 25

OpenAIRE

НЕЙМАТОВА А.В.; МАМЕДОВ Ф.М.; БАХТИЯРЛЫ И.Б.

2016-01-01

Методами дифференциальнo-термическoго (ДТ), рентгенофазового (РФ), микроструктурного (МС) методов анализа исследованы неквазибинарные разрезы (Bi2S3)0.45(Pr2O3)0.55 (Bi2S3)0.45(Pr2S3)0.55 и (Bi2S3)0.75 (Pr2S3)0.25 (Bi2S3)0.75(Pr2O3)0.25 тройной системы Pr2S3-Bi2S3-Pr2O3 построена диаграмма состояния, определены координанты нони моновариантныхравновесий....

Structural, chemical, and thermoelectric properties of Bi{sub 2}Te{sub 3} Peltier materials. Bulk, thin films, and superlattices

Energy Technology Data Exchange (ETDEWEB)

Peranio, Nicola

2008-07-01

In this work, the nature of the natural nanostructure (nns) was analysed and the correlations to the transport coefficients, particularly the lattice thermal conductivity, is discussed. Experimental methods are presented for the first time, yielding an accurate quantitative analysis of the chemical composition and of stress fields in Bi{sub 2}Te{sub 3} and in compounds with similar structural and chemical microstructures. This work can be subdivided as follows: (I) N-type Bi{sub 2}(Te{sub 0.91}Se{sub 0.09}){sub 3} and p-type (Bi{sub 0.26}Sb{sub 0.74}){sub 1.98}(Te{sub 0.99}Se{sub 0.01}){sub 3.02} bulk materials synthesised by the Bridgman technique. (II) Bi{sub 2}Te{sub 3} thin films and Bi{sub 2}Te{sub 3}/Bi{sub 2}(Te{sub 0.88}Se{sub 0.12}){sub 3} superlattices epitaxially grown by molecular beam epitaxy (MBE) on BaF{sub 2} substrates with periods of {delta}-12 nm at the Fraunhofer-Institut fuer Physikalische Messtechnik (IPM). (III) Experimental methods, i.e., TEM specimen preparation, high-accuracy quantitative chemical analysis by EDX in the TEM, and image simulations of dislocations and the nns according to the two-beam dynamical diffraction theory. The nns was analysed in detail by stereomicroscopy and by image simulation and was found to be a pure sinusoidal displacement field with (i) a displacement vector parallel to <5,-5,1> and an amplitude of about 10 pm and (ii) a wave vector parallel to {l_brace}1,0,10{r_brace} and a wavelength of 10 nm. The results obtained here showed a significant amount of stress in the samples, induced by the nns which was still not noticed and identified. Both kinds of nanostructures, artificial (ans) and natural (nns) nanostructures, yielded in thermoelectric materials a low lattice thermal conductivity which was beneficial for the thermoelectric figure of merit ZT. (orig.)

Role of indium tin oxide electrode on the microstructure of self-assembled WO3-BiVO4 hetero nanostructures

Science.gov (United States)

Song, Haili; Li, Chao; Van, Chien Nguyen; Dong, Wenxia; Qi, Ruijuan; Zhang, Yuanyuan; Huang, Rong; Chu, Ying-Hao; Duan, Chun-Gang

2017-11-01

Self-assembled WO3-BiVO4 nanostructured thin films were grown on a (001) yttrium stabilized zirconia (YSZ) substrate by the pulsed laser deposition method with and without the indium tin oxide (ITO) bottom electrode. Their microstructures including surface morphologies, crystalline phases, epitaxial relationships, interface structures, and composition distributions were investigated by scanning electron microscopy, high-resolution transmission electron microscopy, and X-ray energy dispersive spectroscopy. In both samples, WO3 formed nanopillars embedded into the monoclinic BiVO4 matrix with specific orientation relationships. In the sample with the ITO bottom electrode, an atomically sharp BiVO4/ITO interface was formed and the orthorhombic WO3 nanopillars were grown on a relaxed BiVO4 buffer layer with a mixed orthorhombic and hexagonal WO3 transition layer. In contrast, a thin amorphous layer appears at the interfaces between the thin film and the YSZ substrate in the sample without the ITO electrode. In addition, orthorhombic Bi2WO6 lamellar nanopillars were formed between WO3 and BiVO4 due to interdiffusion. Such a WO3-Bi2WO6-BiVO4 double heterojunction photoanode may promote the photo-generated charge separation and further improve the photoelectrochemical water splitting properties.

Optical and Electrical Properties of Al/(p)Bi2S3 Schottky Junction

International Nuclear Information System (INIS)

Kachari, T.; Wary, G.; Rahman, A.

2010-01-01

Thin film Al/(p)Bi 2 S 3 Schottky junctions were prepared by vacuum evaporation under pressure 10 -6 Torr. The p-type Bi 2 S 3 thin films with acceptor concentration (3.36-7.33)x10 16 /cm 3 were obtained by evaporating 'In' along with Bi 2 S 3 powder and then annealing the films at 453K for 5 hours. Different junction-parameters such as ideality factor, barrier height, effective Richardson's constant, short-circuit current, etc. were determined from I-V characteristics. The junctions exhibited rectifying I-V characteristics and also photovoltaic effect. Ideality factor was found to decrease with the increase of temperature. Proper doping, annealing, and hydrogenation are necessary to reduce the series resistance so as to achieve high carrier efficiency. More works are being carried out in this direction.

Template synthesis and photoelectrochemical properties of Bi{sub 2}S{sub 3} microflowers

Energy Technology Data Exchange (ETDEWEB)

Cao, Feng; Wang, Jianmin; Tu, Wanhong; Lv, Xin; Li, Song; Qin, Gaowu, E-mail: qingw@smm.neu.edu.cn

2015-08-15

Highlights: • Bi{sub 2}S{sub 3} microflowers were fabricated by using a sacrificial-template method. • The effect of the specific experimental parameters was examined. • Photoelectrochemical measurements were characterized. - Abstract: Uniform hierarchical Bi{sub 2}S{sub 3} nanostructures were fabricated by using Bi{sub 2}O{sub 2}CO{sub 3} nanoflowers as a sacrificial template through a hydrothermal reaction with an aqueous L-cysteine solution. Multiple techniques, such as X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), Mott–Schottky (M–S) plot and electrochemical impedance spectroscopy (EIS) were applied to investigate the structure, morphology and photoelectrochemical properties of the as-prepared samples. This work demonstrated a simple and cost-effective strategy for the design and fabrication of well-defined complex hierarchical nanomaterials, which can be potentially used in energy storage and conversion devices.

Architectured Bi{sub 2}S{sub 3} nanoflowers: photoenhanced field emission study

Energy Technology Data Exchange (ETDEWEB)

Warule, Sambhaji S.; Kashid, Ranjit V.; Shinde, Deodatta R. [University of Pune, Center for Advanced Studies in Materials Science and Condensed Matter Physics, Department of Physics (India); Chaudhari, Nilima S.; Kale, Bharat B., E-mail: kbbb1@yahoo.com [Centre for Materials for Electronics Technology (C-MET), Department of Information Technology, Government of India (India); More, Mahendra A., E-mail: mam@physics.unipune.ac.in [University of Pune, Center for Advanced Studies in Materials Science and Condensed Matter Physics, Department of Physics (India)

2012-06-15

In the present investigation, we demonstrate a facile hydrothermal/solvothermal route to fabricate elegant Bi{sub 2}S{sub 3} nanoflowers in large scale with highly oriented (001) surfaces. The synthesis route was observed to radically determine the overall morphology of the resultant product. Under hydrothermal conditions (12 h), formation of Bi{sub 2}S{sub 3} flowers on nickel foil composed with the self-assembled tapered nanorods were obtained. Whereas after prolonged reaction time (24 h), formation of ultra long micro belts were observed. Interestingly, the architectured Bi{sub 2}S{sub 3} flowers obtained by solvothermal route are seen to be composed with self assembled nanorods and it was also observed that the synthesis duration influences their shape, size, and areal density. Finding of such unique nanostructures on nickel foil arose by hydrothermal route exemplify a prominent photoenhanced field emission upon visible light illumination, which is attributed to the photoconductivity of Bi{sub 2}S{sub 3}. It is noteworthy that the field emission studies reveal low turn-on field of {approx}1.04 V/{mu}m, required to draw an emission current density of {approx}0.1 {mu}A/cm{sup 2}, which is found to be lower than the earlier reports. The average emission current is observed to be stable over the duration of 3 h. In addition, field emission behavior of a single Bi{sub 2}S{sub 3} flower (pasted on a tungsten microtip) has also been investigated. The high sensitivity and fast response of photoenhanced emission current switching indicate the Bi{sub 2}S{sub 3} nanoflowers as a promising candidate for micro/nano-optoelectronic devices.Graphical abstract.

Fabrication, Characterization, Properties, and Applications of Low-Dimensional BiFeO3 Nanostructures

Directory of Open Access Journals (Sweden)

Heng Wu

2014-01-01

Full Text Available Low-dimensional BiFeO3 nanostructures (e.g., nanocrystals, nanowires, nanotubes, and nanoislands have received considerable attention due to their novel size-dependent properties and outstanding multiferroic properties at room temperature. In recent years, much progress has been made both in fabrications and (microstructural, electrical, and magnetic in characterizations of BiFeO3 low-dimensional nanostructures. An overview of the state of art in BiFeO3 low-dimensional nanostructures is presented. First, we review the fabrications of high-quality BiFeO3 low-dimensional nanostructures via a variety of techniques, and then the structural characterizations and physical properties of the BiFeO3 low-dimensional nanostructures are summarized. Their potential applications in the next-generation magnetoelectric random access memories and photovoltaic devices are also discussed. Finally, we conclude this review by providing our perspectives to the future researches of BiFeO3 low-dimensional nanostructures and some key problems are also outlined.

Magnetic Doping and Kondo Effect in Bi 2 Se 3 Nanoribbons

KAUST Repository

Cha, Judy J.; Williams, James R.; Kong, Desheng; Meister, Stefan; Peng, Hailin; Bestwick, Andrew J.; Gallagher, Patrick; Goldhaber-Gordon, David; Cui, Yi

2010-01-01

A simple surface band structure and a large bulk band gap have allowed Bi2Se3 to become a reference material for the newly discovered three-dimensional topological insulators, which exhibit topologically protected conducting surface states that reside inside the bulk band gap. Studying topological insulators such as Bi2Se3 in nanostructures is advantageous because of the high surfaceto-volume ratio, which enhances effects from the surface states; recently reported Aharonov-Bohm oscillation in topological insulator nanoribbons by some of us is a good example. Theoretically, introducing magnetic impurities in topological insulators is predicted to open a small gap in the surface states by breaking time-reversal symmetry. Here, we present synthesis of magnetically doped Bi 2Se3 nanoribbons by vapor-liquid-solid growth using magnetic metal thin films as catalysts. Although the doping concentration is less than ∼2 %. low-temperature transport measurements of the Fe-doped Bi2Se3 nanoribbon devices show a clear Kondo effect at temperatures below 30 K, confirming the presence of magnetic impurities in the Bi2Se3 nanoribbons. The capability to dope topological insulator nanostructures magnetically opens up exciting opportunities for spintronics. © 2010 American Chemical Society.

Magnetic Doping and Kondo Effect in Bi 2 Se 3 Nanoribbons

KAUST Repository

Cha, Judy J.

2010-03-10

A simple surface band structure and a large bulk band gap have allowed Bi2Se3 to become a reference material for the newly discovered three-dimensional topological insulators, which exhibit topologically protected conducting surface states that reside inside the bulk band gap. Studying topological insulators such as Bi2Se3 in nanostructures is advantageous because of the high surfaceto-volume ratio, which enhances effects from the surface states; recently reported Aharonov-Bohm oscillation in topological insulator nanoribbons by some of us is a good example. Theoretically, introducing magnetic impurities in topological insulators is predicted to open a small gap in the surface states by breaking time-reversal symmetry. Here, we present synthesis of magnetically doped Bi 2Se3 nanoribbons by vapor-liquid-solid growth using magnetic metal thin films as catalysts. Although the doping concentration is less than ∼2 %. low-temperature transport measurements of the Fe-doped Bi2Se3 nanoribbon devices show a clear Kondo effect at temperatures below 30 K, confirming the presence of magnetic impurities in the Bi2Se3 nanoribbons. The capability to dope topological insulator nanostructures magnetically opens up exciting opportunities for spintronics. © 2010 American Chemical Society.

Optimization of excess Bi doping to enhance ferroic orders of spin casted BiFeO3 thin film

International Nuclear Information System (INIS)

Gupta, Surbhi; Gupta, Vinay; Tomar, Monika; James, A. R.; Pal, Madhuparna; Guo, Ruyan; Bhalla, Amar

2014-01-01

Multiferroic Bismuth Ferrite (BiFeO 3 ) thin films with varying excess bismuth (Bi) concentration were grown by chemical solution deposition technique. Room temperature multiferroic properties (ferromagnetism, ferroelectricity, and piezoelectricity) of the deposited BiFeO 3 thin films have been studied. High resolution X-ray diffraction and Raman spectroscopy studies reveal that the dominant phases formed in the prepared samples change continuously from a mixture of BiFeO 3 and Fe 2 O 3 to pure BiFeO 3 phase and, subsequently, to a mixture of BiFeO 3 and Bi 2 O 3 with increase in the concentration of excess Bi from 0% to 15%. BiFeO 3 thin films having low content (0% and 2%) of excess Bi showed the traces of ferromagnetic phase (γ-Fe 2 O 3 ). Deterioration in ferroic properties of BiFeO 3 thin films is also observed when prepared with higher content (15%) of excess Bi. Single-phased BiFeO 3 thin film prepared with 5% excess Bi concentration exhibited the soft ferromagnetic hysteresis loops and ferroelectric characteristics with remnant polarization 4.2 μC/cm 2 and saturation magnetization 11.66 emu/g. The switching of fine spontaneous domains with applied dc bias has been observed using piezoresponse force microscopy in BiFeO 3 thin films having 5% excess Bi. The results are important to identify optimum excess Bi concentration needed for the formation of single phase BiFeO 3 thin films exhibiting the improved multiferroic properties.

Evidence for surface-generated photocurrent in (Bi,Sb)2Se3and(Bi,Sb)2Te3 thin films

Science.gov (United States)

Pan, Yu; Richardella, Anthony; Yao, Bing; Lee, Joon Sue; Flanagan, Thomas; Kandala, Abhinav; Samarth, Nitin; Yeats, Andrew; Mintun, Peter; Awschalom, David

2015-03-01

Illumination with circularly polarized light is known produce a helicity-dependent photocurrent in topological insulators such as Bi2Se3 [e.g. Nature Nanotech. 7, 96 (2012)]. However, the exact origin of this effect is still unclear since it is observed with photons well above the bulk band gap. We report measurements of the polarization-dependent photocurrent in a series of (Bi,Sb)2Se3 thin films with different carrier concentrations and find that the photocurrent is enhanced as we increase the population of the surface states. This finding is supported by a study of helicity-dependent photocurrents in back-gated (Bi,Sb)2Te3 thin films, where the chemical potential is varied electrostatically. By illuminating our samples at different wavelengths, we show that the helicity-dependent photocurrent is enhanced when the photon energy approaches the energy difference between the lowest and first excited (unoccupied) topological surface states. This leads us to attribute the helicity-dependent photocurrent in topological insulators to optical excitations between these two spin-textured surface states. We will also discuss experiments imaging the spatial variation of these helicity-dependent photocurrents. This work is supported by ONR.

Tuning magnetic properties of magnetoelectric BiFeO 3-NiFe 2O 4 nanostructures

Science.gov (United States)

Crane, S. P.; Bihler, C.; Brandt, M. S.; Goennenwein, S. T. B.; Gajek, M.; Ramesh, R.

2009-02-01

Multifunctional thin film nanostructures containing soft magnetic materials such as nickel ferrite are interesting for potential applications in microwave signal processing because of the possibility to shrink the size of device architecture and limit device power consumption. An essential prerequisite to future applications of such a system is a firm understanding of its magnetic properties. We show that nanostructures composed of ferrimagnetic NiFe 2O 4 pillars in a multiferroic BiFeO 3 matrix can be tuned magnetically by altering the aspect ratio of the pillars by depositing films of varying thickness. Magnetic anisotropy is studied using ferromagnetic resonance, which shows that the uniaxial magnetic anisotropy in the growth direction changes sign upon increasing the film thickness. The magnitude of this anisotropy contribution can be explained via a combination of shape and magnetostatic effects, using the object-oriented micromagnetic framework (OOMMF). The key factors determining the magnetic properties of the films are shown to be the aspect ratio of individual pillars and magnetostatic interactions between neighboring pillars.

Tuning magnetic properties of magnetoelectric BiFeO3-NiFe2O4 nanostructures

International Nuclear Information System (INIS)

Crane, S.P.; Bihler, C.; Brandt, M.S.; Goennenwein, S.T.B.; Gajek, M.; Ramesh, R.

2009-01-01

Multifunctional thin film nanostructures containing soft magnetic materials such as nickel ferrite are interesting for potential applications in microwave signal processing because of the possibility to shrink the size of device architecture and limit device power consumption. An essential prerequisite to future applications of such a system is a firm understanding of its magnetic properties. We show that nanostructures composed of ferrimagnetic NiFe 2 O 4 pillars in a multiferroic BiFeO 3 matrix can be tuned magnetically by altering the aspect ratio of the pillars by depositing films of varying thickness. Magnetic anisotropy is studied using ferromagnetic resonance, which shows that the uniaxial magnetic anisotropy in the growth direction changes sign upon increasing the film thickness. The magnitude of this anisotropy contribution can be explained via a combination of shape and magnetostatic effects, using the object-oriented micromagnetic framework (OOMMF). The key factors determining the magnetic properties of the films are shown to be the aspect ratio of individual pillars and magnetostatic interactions between neighboring pillars

Optimization of excess Bi doping to enhance ferroic orders of spin casted BiFeO{sub 3} thin film

Energy Technology Data Exchange (ETDEWEB)

Gupta, Surbhi; Gupta, Vinay, E-mail: drguptavinay@gmail.com [Department of Physics and Astrophysics, University of Delhi, Delhi (India); Tomar, Monika [Department of Physics, Miranda Housea, University of Delhi, Delhi (India); James, A. R. [Defence Metallurgical Research Laboratory, Hyderabad (India); Pal, Madhuparna; Guo, Ruyan; Bhalla, Amar [Department of Electrical and Computer Engineering, College of Engineering, University of Texas at SanAntonio, San Antonio 78249 (United States)

2014-06-21

Multiferroic Bismuth Ferrite (BiFeO{sub 3}) thin films with varying excess bismuth (Bi) concentration were grown by chemical solution deposition technique. Room temperature multiferroic properties (ferromagnetism, ferroelectricity, and piezoelectricity) of the deposited BiFeO{sub 3} thin films have been studied. High resolution X-ray diffraction and Raman spectroscopy studies reveal that the dominant phases formed in the prepared samples change continuously from a mixture of BiFeO{sub 3} and Fe{sub 2}O{sub 3} to pure BiFeO{sub 3} phase and, subsequently, to a mixture of BiFeO{sub 3} and Bi{sub 2}O{sub 3} with increase in the concentration of excess Bi from 0% to 15%. BiFeO{sub 3} thin films having low content (0% and 2%) of excess Bi showed the traces of ferromagnetic phase (γ-Fe{sub 2}O{sub 3}). Deterioration in ferroic properties of BiFeO{sub 3} thin films is also observed when prepared with higher content (15%) of excess Bi. Single-phased BiFeO{sub 3} thin film prepared with 5% excess Bi concentration exhibited the soft ferromagnetic hysteresis loops and ferroelectric characteristics with remnant polarization 4.2 μC/cm{sup 2} and saturation magnetization 11.66 emu/g. The switching of fine spontaneous domains with applied dc bias has been observed using piezoresponse force microscopy in BiFeO{sub 3} thin films having 5% excess Bi. The results are important to identify optimum excess Bi concentration needed for the formation of single phase BiFeO{sub 3} thin films exhibiting the improved multiferroic properties.

Electrical and optical properties of Bi2S3 thin films deposited by successive ionic layer adsorption and reaction (SILAR) method

International Nuclear Information System (INIS)

Ubale, A.U.; Daryapurkar, A.S.; Mankar, R.B.; Raut, R.R.; Sangawar, V.S.; Bhosale, C.H.

2008-01-01

Bi 2 S 3 thin films were prepared on amorphous glass substrates by successive ionic layer adsorption and reaction (SILAR) method at room temperature using bismuth nitrate and thioacetamide as the cationic and anionic precursors in aqueous medium. The X-ray diffraction study reveals that as-deposited films of Bi 2 S 3 are amorphous in nature, it becomes polycrystalline after annealing at 573 K. The decrease in activation energy from 0.65 to 0.36 eV and optical band gap energy, E g , from 2.35 to 1.86 eV are observed as film thickness varies from 67 to 150 nm. Such changes are attributed to the quantum size effect in semiconducting films

Bi2O3 nanoparticles encapsulated in surface mounted metal-organic framework thin films

Science.gov (United States)

Guo, Wei; Chen, Zhi; Yang, Chengwu; Neumann, Tobias; Kübel, Christian; Wenzel, Wolfgang; Welle, Alexander; Pfleging, Wilhelm; Shekhah, Osama; Wöll, Christof; Redel, Engelbert

2016-03-01

We describe a novel procedure to fabricate a recyclable hybrid-photocatalyst based on Bi2O3@HKUST-1 MOF porous thin films. Bi2O3 nanoparticles (NPs) were synthesized within HKUST-1 (or Cu3(BTC)2) surface-mounted metal-organic frame-works (SURMOFs) and characterized using X-ray diffraction (XRD), a quartz crystal microbalance (QCM) and transmission electron microscopy (TEM). The Bi2O3 semiconductor NPs (diameter 1-3 nm)/SURMOF heterostructures exhibit superior photo-efficiencies compared to NPs synthesized using conventional routes, as demonstrated via the photodegradation of the nuclear fast red (NFR) dye.We describe a novel procedure to fabricate a recyclable hybrid-photocatalyst based on Bi2O3@HKUST-1 MOF porous thin films. Bi2O3 nanoparticles (NPs) were synthesized within HKUST-1 (or Cu3(BTC)2) surface-mounted metal-organic frame-works (SURMOFs) and characterized using X-ray diffraction (XRD), a quartz crystal microbalance (QCM) and transmission electron microscopy (TEM). The Bi2O3 semiconductor NPs (diameter 1-3 nm)/SURMOF heterostructures exhibit superior photo-efficiencies compared to NPs synthesized using conventional routes, as demonstrated via the photodegradation of the nuclear fast red (NFR) dye. Electronic supplementary information (ESI) available. See DOI: 10.1039/c6nr00532b

Synthesis of nanostructured CuInS{sub 2} thin films and their application in dye-sensitized solar cells

Energy Technology Data Exchange (ETDEWEB)

Zhao, Yu; Zhuang, Mixue; Liu, Zhen; Wei, Aixiang [Guangdong University of Technology, Guangdong Provincial Key Laboratory of Functional Soft Condensed Matter, School of Material and Energy, Guangzhou (China); Luo, Fazhi [Guangdong University of Technology, Guangdong Provincial Key Laboratory of Functional Soft Condensed Matter, School of Material and Energy, Guangzhou (China); The Fifth Electronics Research Institute of Ministry of Industry and Information Technology, Guangzhou (China); Liu, Jun [Guangdong University of Technology, Guangdong Provincial Key Laboratory of Functional Soft Condensed Matter, School of Material and Energy, Guangzhou (China); Zhejiang University, State Key Lab of Silicon Materials, Hangzhou (China)

2016-03-15

CuInS{sub 2} (CIS) nanostructure thin films were successfully synthesized on FTO conductive glass substrates by solvothermal method. It is found that the surface morphology and microstructure of CIS thin films can be tailored by simply adjusting the concentration of oxalic acid. CIS nanostructure films with texture of ''nanosheet array'' and ''flower-like microsphere'' were obtained and used as Pt-free counter electrode for dye-sensitized solar cells (DSSCs). The nanosheet array CIS was found to have a better electrocatalytic activity than the flower-like microsphere one. DSSCs based on nanosheet array CIS thin film counter electrode show conversion efficiency of 3.33 %, which is comparable to the Pt-catalyzed DSSCs. The easy synthesis, low cost, morphology tunable and excellent electrocatalytic property may make the CuInS{sub 2} nanostructure competitive as counter electrode in DSSCs. (orig.)

Synchrotron X-ray studies of epitaxial ferroelectric thin films and nanostructures

Science.gov (United States)

Klug, Jeffrey A.

The study of ferroelectric thin films is a field of considerable scientific and technological interest. In this dissertation synchrotron x-ray techniques were applied to examine the effects of lateral confinement and epitaxial strain in ferroelectric thin films and nanostructures. Three materials systems were investigated: laterally confined epitaxial BiFeO3 nanostructures on SrTiO3 (001), ultra-thin commensurate SrTiO 3 films on Si (001), and coherently strained films of BaTiO3 on DyScO3 (110). Epitaxial films of BiFeO3 were deposited by radio frequency magnetron sputtering on SrRuO3 coated SrTiO 3 (001) substrates. Laterally confined nanostructures were fabricated using focused ion-beam processing and subsequently characterized with focused beam x-ray nanodiffraction measurements with unprecedented spatial resolution. Results from a series of rectangular nanostructures with lateral dimensions between 500 nm and 1 mum and a comparably-sized region of the unpatterned BiFeO3 film revealed qualitatively similar distributions of local strain and lattice rotation with a 2-3 times larger magnitude of variation observed in those of the nanostructures compared to the unpatterned film. This indicates that lateral confinement leads to enhanced variation in the local strain and lattice rotation fields in epitaxial BiFeO3 nanostructures. A commensurate 2 nm thick film of SrTiO3 on Si was characterized by the x-ray standing wave (XSW) technique to determine the Sr and Ti cation positions in the strained unit cell in order to verify strain-induced ferroelectricity in SrTiO3/Si. A Si (004) XSW measurement at 10°C indicated that the average Ti displacement from the midpoint between Sr planes was consistent in magnitude to that predicted by a density functional theory (DFT) calculated ferroelectric structure. The Ti displacement determined from a 35°C measurement better matched a DFT-predicted nonpolar structure. The thin film extension of the XSW technique was employed to

Capacitive and photocatalytic performance of Bi_2S_3 nanostructures synthesized by solvothermal method

International Nuclear Information System (INIS)

Liang, Kangqiang; Wang, Chenggang; Xu, Xijin; Leng, Jiancai; Ma, Hong

2017-01-01

Different Bi_2S_3 nanoarchitectures (nanorods and nanobelts) were successfully synthesized with a facile solvothermal method at different temperature. The nanobelts transformed into nanorods when the temperature was 200 °C increased from 150 °C. The nanorod-morphology was kept even the temperature was further increased. The galvanostatic charge/discharge performance showed that the prepared Bi_2S_3 nanorods had good performance of discharge efficiency at current density from 1 A g"−"1 to 4 A g"−"1. The specific capacitance was 270 F g"−"1 at a current density of 1 A g"−"1. Furthermore, the nanorods were also used as the efficient UV-light photocatalysts for the degradation of Rhodamine B (RhB), which showed almost complete degradation (∼87%) of RhB dye at 100 min. - Highlights: • Bi_2S_3 nanorods were successfully synthesized with a facile solvothermal method. • The specific capacitance can be 270 F g"−"1 at a current density of 1 A g"−"1. • 87% of RhB dye can be degraded at 100 min.

Comparison of Y{sub 2}O{sub 3}:Bi{sup 3+} phosphor thin films fabricated by the spin coating and radio frequency magnetron techniques

Energy Technology Data Exchange (ETDEWEB)

Jafer, R.M.; Yousif, A. [Department of Physics, University of the Free State, P.O. Box 339, Bloemfontein ZA 9300 (South Africa); Department of Physics, Faculty of Education, University of Khartoum, P.O. Box 321, Postal Code 11115 Omdurman (Sudan); Kumar, Vinod [Department of Physics, University of the Free State, P.O. Box 339, Bloemfontein ZA 9300 (South Africa); Photovoltaic Laboratory, Centre for Energy Studies, Indian Institute of Technology Delhi, New Delhi 110016 (India); Pathak, Trilok Kumar [Department of Physics, University of the Free State, P.O. Box 339, Bloemfontein ZA 9300 (South Africa); Semiconductor Physics Lab, Department of Physics, Gurukula Kangri University, Haridwar (India); Purohit, L.P. [Semiconductor Physics Lab, Department of Physics, Gurukula Kangri University, Haridwar (India); Swart, H.C., E-mail: swarthc@ufs.ac.za [Department of Physics, University of the Free State, P.O. Box 339, Bloemfontein ZA 9300 (South Africa); Coetsee, E., E-mail: CoetseeE@ufs.ac.za [Department of Physics, University of the Free State, P.O. Box 339, Bloemfontein ZA 9300 (South Africa)

2016-09-15

The reactive radio-frequency (RF) magnetron sputtering and spin coating fabrication techniques were used to fabricate Y{sub 2−x}O{sub 3}:Bi{sub x=0.5%} phosphor thin films. The two techniques were analysed and compared as part of investigations being done on the application of down-conversion materials for a Si solar cell. The morphology, structural and optical properties of these thin films were investigated. The X-ray diffraction results of the thin films fabricated by both techniques showed cubic structures with different space groups. The optical properties showed different results because the Bi{sup 3+} ion is very sensitive towards its environment. The luminescence results for the thin film fabricated by the spin coating technique is very similar to the luminescence observed in the powder form. It showed three obvious emission bands in the blue and green regions centered at about 360, 410 and 495 nm. These emissions were related to the {sup 3}P{sub 1}–{sup 1}S{sub 0} transition of the Bi{sup 3+} ion situated in the two different sites of the Y{sub 2}O{sub 3} matrix with I a-3(206) space group. Whereas the thin film fabricated by the radio frequency magnetron technique showed a broad single emission band in the blue region centered at about 416 nm. This was assigned to the {sup 3}P{sub 1}–{sup 1}S{sub 0} transition of the Bi{sup 3+} ion situated in one of the Y{sub 2}O{sub 3} matrix's sites with a Fm-3 (225) space group. The spin coating fabrication technique is suggested to be the best technique to fabricate the Y{sub 2}O{sub 3}:Bi{sup 3+} phosphor thin films. - Highlights: • RF sputtering and spin coating were used to fabricate Y{sub 2−x}O{sub 3}:Bi{sub x=0.5%} phosphor thin films. • XRD results of the two films showed cubic structures with different space groups. • PL showed different emission for the Bi{sup 3+} ions in the two films. • Three emission bands in the blue and green regions centered at about 360, 410 and 495 nm. • RF

YIG: Bi2O3 Nanocomposite Thin Films for Magnetooptic and Microwave Applications

Directory of Open Access Journals (Sweden)

M. Nur-E-Alam

2015-01-01

Full Text Available Y3Fe5O12-Bi2O3 composite thin films are deposited onto Gd3Ga5O12 (GGG substrates and their annealing crystallization regimes are optimized (in terms of both process temperatures and durations to obtain high-quality thin film layers possessing magnetic properties attractive for a range of technological applications. The amount of bismuth oxide content introduced into these nanocomposite-type films is controlled by adjusting the RF power densities applied to both Y3Fe5O12 and Bi2O3 sputtering targets during the cosputtering deposition processes. The measured material properties of oven-annealed YIG-Bi2O3 films indicate that cosputtering of YIG-Bi2O3 composites can provide the flexibility of application-specific YIG layers fabrication of interest for several existing, emerging, and also frontier technologies. Experimental results demonstrate large specific Faraday rotation (of more than 1°/µm at 532 nm, achieved simultaneously with low optical losses in the visible range and very narrow peak-to-peak ferromagnetic resonance linewidth of around ΔHpp= 6.1 Oe at 9.77 GHz.

Photocatalytic activity of Bi_2WO_6/Bi_2S_3 heterojunctions: the facilitation of exposed facets of Bi_2WO_6 substrate

International Nuclear Information System (INIS)

Yan, Long; Wang, Yufei; Shen, Huidong; Zhang, Yu; Li, Jian; Wang, Danjun

2017-01-01

Highlights: • Bi_2S_3/Bi_2WO_6 hybrids with exposed (020) Bi_2WO_6 facets have been synthesized. • X-ray photoelectron spectroscopy reveals that a small amount of Bi_2S_3 was formed. • The enhanced photoactivity of hybrids is due to heterojunction and (020) facets. • A possible photocatalytic degradation mechanism is proposed. - Abstract: Bi_2S_3/Bi_2WO_6 hybrid architectures with exposed (020) Bi_2WO_6 facets have been synthesized via a controlled anion exchange approach. X-ray photoelectron spectroscopy (XPS) reveals that a small amount of Bi_2S_3 was formed on the surface of Bi_2WO_6 during the anion exchange process, thus leading to the transformation from the Bi_2WO_6 to Bi_2S_3/Bi_2WO_6. A rhodamine B (RhB) aqueous solution was chosen as model organic pollutants to evaluate the photocatalytic activities of the Bi_2S_3/Bi_2WO_6 catalysts. Under visible light irradiation, the Bi_2S_3/Bi_2WO_6-TAA displayed the excellent visible light photoactivities compared with pure Bi_2S_3, Bi_2WO_6 and other composite photocatalysts. The efficient photocatalytic activity of the Bi_2S_3/Bi_2WO_6-TAA composite microspheres was ascribed to the constructed heterojunctions and the inner electric field caused by the exposed (020) Bi_2WO_6 facets. Active species trapping experiments revealed that h"+ and O_2·"− are the main active species in the photocatalytic process. Furthermore, the as-obtained photocatalysts showed good photocatalytic activity after four recycles. The results presented in this study provide a new concept for the rational design and development of highly efficient photocatalysts.

Exfoliated thin Bi{sub 2}MoO{sub 6} nanosheets supported on WO{sub 3} electrode for enhanced photoelectrochemical water splitting

Energy Technology Data Exchange (ETDEWEB)

Ma, Ying; Jia, Yulong; Wang, Lina [State Key Laboratory for Oxo Synthesis & Selective Oxidation, and National Engineering Research Center for Fine Petrochemical Intermediates, Lanzhou Institute of Chemical Physics, CAS, Lanzhou 730000 (China); University of Chinese Academy of Sciences, Beijing 100049 (China); Yang, Min [State Key Laboratory for Oxo Synthesis & Selective Oxidation, and National Engineering Research Center for Fine Petrochemical Intermediates, Lanzhou Institute of Chemical Physics, CAS, Lanzhou 730000 (China); Bi, Yingpu, E-mail: yingpubi@licp.cas.cn [State Key Laboratory for Oxo Synthesis & Selective Oxidation, and National Engineering Research Center for Fine Petrochemical Intermediates, Lanzhou Institute of Chemical Physics, CAS, Lanzhou 730000 (China); Qi, Yanxing, E-mail: qiyx@licp.cas.cn [State Key Laboratory for Oxo Synthesis & Selective Oxidation, and National Engineering Research Center for Fine Petrochemical Intermediates, Lanzhou Institute of Chemical Physics, CAS, Lanzhou 730000 (China)

2016-12-30

Highlights: • Thin Bi{sub 2}MoO{sub 6} nanosheets were prepared by microwave assisted ultrasonic separation. • The thin Bi{sub 2}MoO{sub 6} nanosheets could be more favorable to charge shift and separation. • The WO{sub 3}/thin Bi{sub 2}MoO{sub 6} exhibits superior photoelectric activity than WO{sub 3}/Bi{sub 2}MoO{sub 6} film. • The efficient photoelectric property results from facilitated charge separation. - Abstract: Thin Bi{sub 2}MoO{sub 6} nanosheets are obtained by a microwave-assisted ultrasonic separation process. After exfoliation, the thinner and uniform nanosheets with a thickness of about 10 nm were obtained. The exfoliated nanosheets would provide many amazing functionalities such as high electron mobility and quantum Hall effects. Therefore, thin Bi{sub 2}MoO{sub 6} supported on WO{sub 3} electrode (WO{sub 3}/thin Bi{sub 2}MoO{sub 6}) exhibits facilitated charge separation than pure WO{sub 3} film and the un-exfoliated Bi{sub 2}MoO{sub 6} nanosheets supported on WO{sub 3} electrode (WO{sub 3}/Bi{sub 2}MoO{sub 6}). As a result, WO{sub 3}/thin Bi{sub 2}MoO{sub 6} shows remarkably stable photocurrent density of 2.2 mA/cm{sup 2} at 0.8 V{sub SCE} in 0.1 M Na{sub 2}SO{sub 4} which is higher than that of that of WO{sub 3} (1.1 mA/cm{sup 2}) and WO{sub 3}/Bi{sub 2}MoO{sub 6} (1.5 mA/cm{sup 2}).

Photoluminescence of electron beam evaporated CaS:Bi thin films

CERN Document Server

Smet, P F; Poelman, D R; Meirhaeghe, R L V

2003-01-01

For the first time, the photoluminescence (PL) of electron beam evaporated CaS:Bi thin films is reported. Luminescent CaS:Bi powder prepared out of aqueous solutions was used as source material. The influence of substrate temperature on the PL and the morphology of thin films is discussed, and an optimum is determined. Substrate temperatures between 200 deg. C and 300 deg. C lead to good quality thin films with sufficient PL intensity. As-deposited thin films show two emission bands, peaking at 450 and 530 nm. Upon annealing the emission intensity increases, and annealing at 800 deg. C is sufficient to obtain a homogeneously blue emitting thin film (CIE colour coordinates (0.17; 0.12)), thanks to a single remaining emission band at 450 nm. The influence of ambient temperature on the PL of CaS:Bi powder and thin films was also investigated and it was found that CaS:Bi thin films show a favourable thermal quenching behaviour near room temperature.

Improved photoelectrochemical performance of BiVO4/MoO3 heterostructure thin films

Science.gov (United States)

Kodan, Nisha; Mehta, B. R.

2018-05-01

Bismuth vanadate (BiVO4) and Molybdenum trioxide (MoO3) thin films have been prepared by RF sputtering technique. BiVO4 thin films were deposited on indium doped tin oxide (In: SnO2; ITO) substrates at room temperature and 80W applied rf power. The prepared BiVO4 thin films were further annealed at 450°C for 2 hours in air to obtain crystalline monoclinic phase and successively coated with MoO3 thin films deposited at 150W rf power and 400°C for 30 minutes. The effect of coupling BiVO4 and MoO3 on the structural, optical and photoelectrochemical (PEC) properties have been studied. Optical studies reveal that coupling of BiVO4 and MoO3 results in improvement of optical absorption in visible region of solar spectrum. PEC study shows approximate 3-fold and 38-fold increment in photocurrent values of BiVO4/MoO3 (0.38 mA/cm2) heterostructure thin film as compared to MoO3 (0.15 mA/cm2) and BiVO4 (10 µA/cm2) thin films at applied bias of 1 V vs Ag/AgCl in 0.5 M Na2SO4 (pH=7) electrolyte.

Facile one-pot transformation using structure-guided combustion waves of micro-nanostructured β-Bi2O3 to α-Bi2O3@C and analysis of electrochemical capacitance

Science.gov (United States)

Hwang, Hayoung; Shin, Jung-ho; Lee, Kang Yeol; Choi, Wonjoon

2018-01-01

Precise phase-transformation can facilitate control of the properties of various materials, while an organic coating surrounding inorganic materials can yield useful characteristics. Herein, we demonstrate facile, selective manipulation of micro-nanostructured bismuth oxide (Bi2O3) for phase transformation from microflower-like β-Bi2O3 to micropill-like α-Bi2O3, with carbon-coating layer deposition, using structure-guided combustion waves (SGCWs). Microflower-like β-Bi2O3 are synthesized as core materials and nitrocellulose is coated on their surfaces for the formation of core-shell hybrid structures of Bi2O3 and chemical fuel. The SGCWs, which propagate along the core-material and fuel interfaces, apply high thermal energy (550-600 °C) and deposit incompletely combusted carbonaceous fuel on the microflower-like β-Bi2O3 to enable transformation to α-phase and carbon-coating-layer synthesis. SGCW-induced improvements to the electrochemical characteristics of the developed micropill-like α-Bi2O3@C, compared with the microflower-like β-Bi2O3, are investigated. The enhanced stability from the α-phase Bi2O3 and micropill-like structures during charge-discharge cycling improves the specific capacitance, while the carbon-coating layers facilitate increased electrical conductivity. SGCW-based methods exhibit high potential for selective phase manipulation and synthesis of carbon coatings surrounding micro-nanomaterials. They constitute a low-cost, fast, large-scale process for metal oxides, ceramics, and hybrid materials, implemented through control of the processing parameters by tuning the temperature, chemical fuel, and ambient conditions.

Growth and structure of thermally evaporated Bi{sub 2}Te{sub 3} thin films

Energy Technology Data Exchange (ETDEWEB)

Rogacheva, E.I., E-mail: rogacheva@kpi.kharkov.ua [National Technical University “Kharkov Polytechnic Institute”, 21 Frunze St., Kharkov 61002 (Ukraine); Budnik, A.V. [National Technical University “Kharkov Polytechnic Institute”, 21 Frunze St., Kharkov 61002 (Ukraine); Dobrotvorskaya, M.V.; Fedorov, A.G.; Krivonogov, S.I.; Mateychenko, P.V. [Institute for Single Crystals of NAS of Ukraine, 60 Lenin Prospect, Kharkov 61001 (Ukraine); Nashchekina, O.N.; Sipatov, A.Yu. [National Technical University “Kharkov Polytechnic Institute”, 21 Frunze St., Kharkov 61002 (Ukraine)

2016-08-01

The growth mechanism, microstructure, and crystal structure of the polycrystalline n-Bi{sub 2}Te{sub 3} thin films with thicknesses d = 15–350 nm, prepared by thermal evaporation in vacuum onto glass substrates, were studied. Bismuth telluride with Te excess was used as the initial material for the thin film preparation. The thin film characterization was performed using X-ray diffraction, X-ray photoelectron spectroscopy, energy-dispersive X-ray spectroscopy, scan electron microscopy, and electron force microscopy. It was established that the chemical composition of the prepared films corresponded rather well to the starting material composition and the films did not contain any phases apart from Bi{sub 2}Te{sub 3}. It was shown that the grain size and the film roughness increased with increasing film thickness. The preferential growth direction changed from [00l] to [015] under increasing d. The X-ray photoelectron spectroscopy studies showed that the thickness of the oxidized surface layer did not exceed 1.5–2.0 nm and practically did not change in the process of aging at room temperature, which is in agreement with the results reported earlier for single crystals. The obtained data show that using simple and inexpensive method of thermal evaporation in vacuum and appropriate technological parameters, one can grow n-Bi{sub 2}Te{sub 3} thin films of a sufficiently high quality. - Highlights: • The polycrystalline n-Bi{sub 2}Te{sub 3} thin films were grown thermal evaporation onto glass. • The growth mechanism and film structure were studied by different structure methods. • The grain size and film roughness increased with increasing film thickness. • The growth direction changes from [00l] to [015] under film thickness increasing. • The oxidized layer thickness (1–2 nm) did not change under aging at room temperature.

Thermoelectric properties of Bi2Te3 base solid solutions in the Bi2Te3-InS system

International Nuclear Information System (INIS)

Safarov, M.G.; Rustamov, P.G.; Alidzhanov, M.A.

1979-01-01

The rich Bi 2 Te 3 part ot the Bi 2 Te 3 -InS constitutional diagram has been studied with a view to produce new Bi 2 Te 3 -based solid solutions and to establish the maximum solubility of InS in Bi 2 Te 3 . The methods of differential-thermal, X-ray phase and microstructural analysis have been used. The alloys microhardness, density and thermal electric properties have been measured. A large region of Bi 2 Te 3 -based restricted solid solutions has been detected; it reaches 14.0 mol.% InS at room temperature. Studied have been the thermoelectromotive forces, electric and thermal conductivity of the alloys, containing up to 5 mol.% InS in the 300-700 K temperature range

Bi-epitaxial YBa2Cu3Ox Thin Films on Tilted-axes NdGaO3 Substrates with CeO2 Seeding Layer

International Nuclear Information System (INIS)

Mozhaev, P B; Mozhaeva, J E; Jacobsen, C S; Hansen, J Bindslev; Bdikin, I K; Luzanov, V A; Kotelyanskii, I M; Zybtsev, S G

2006-01-01

Bi-epitaxial YBa 2 Cu 3 O x (YBCO) thin films with out-of-plane tilt angle in the range 18 - 27 0 were manufactured using pulsed laser deposition on NdGaO 3 tilted-axes substrates with CeO 2 seeding layers. The YBCO thin film orientation over the seeding layer depended on deposition conditions. Removal of the seeding layer from part of the substrate surface by ionbeam etching resulted in formation of a bi-epitaxial thin film with different c-axis orientation of two parts of the film. The bi-epitaxial film orientation and structure were studied using X-ray diffraction techniques, and surface morphology was observed with atomic force microscope (AFM). Photolithography and ion-beam etching techniques were used for patterning bi-epitaxial thin films. Electrical characterization of the obtained structures was performed

Effect of preparation conditions on the properties of Cu3BiS3 thin films grown by a two - step process

Science.gov (United States)

Mesa, F.; Gordillo, G.

2009-05-01

Cu3BiS3 thin films were prepared on soda-lime glass substrates by co-evaporation of the precursors in a two-step process; for that, the metallic precursors were evaporated from a tungsten boat in presence of elemental sulfur evaporated from a tantalum effusion cell. The films were characterized by spectral transmittance, atomic force microscopy AFM and x-ray diffraction (XRD) measurements to investigate the effect of the growth conditions on the optical, morphological and structural properties. The results revealed that, independently of the deposition conditions, the films grow only in the orthorhombic Cu3BiS3 phase. It was also found that the Cu3BiS3 films present p-type conductivity, a high absorption coefficient (greater than 104 cm-1) and an energy band gap Eg of about 1.41 eV, indicating that this compound has good properties to perform as absorbent layer in thin film solar cells.

Tuning magnetic properties of magnetoelectric BiFeO{sub 3}-NiFe{sub 2}O{sub 4} nanostructures

Energy Technology Data Exchange (ETDEWEB)

Crane, S.P. [Department of Materials Science and Engineering, University of California, Berkeley, CA 94720 (United States)], E-mail: scrane@berkeley.edu; Bihler, C.; Brandt, M.S. [Walter Schottky Institut, Technische Universitaet Muenchen, D-85748 Garching (Germany); Goennenwein, S.T.B. [Walther-Meissner-Institut, Bayerische Akademie der Wissenschaften, D-85748 Garching (Germany); Gajek, M. [Department of Physics, University of California, Berkeley, CA 94720 (United States); Ramesh, R. [Department of Materials Science and Engineering, University of California, Berkeley, CA 94720 (United States); Department of Physics, University of California, Berkeley, CA 94720 (United States)

2009-02-15

Multifunctional thin film nanostructures containing soft magnetic materials such as nickel ferrite are interesting for potential applications in microwave signal processing because of the possibility to shrink the size of device architecture and limit device power consumption. An essential prerequisite to future applications of such a system is a firm understanding of its magnetic properties. We show that nanostructures composed of ferrimagnetic NiFe{sub 2}O{sub 4} pillars in a multiferroic BiFeO{sub 3} matrix can be tuned magnetically by altering the aspect ratio of the pillars by depositing films of varying thickness. Magnetic anisotropy is studied using ferromagnetic resonance, which shows that the uniaxial magnetic anisotropy in the growth direction changes sign upon increasing the film thickness. The magnitude of this anisotropy contribution can be explained via a combination of shape and magnetostatic effects, using the object-oriented micromagnetic framework (OOMMF). The key factors determining the magnetic properties of the films are shown to be the aspect ratio of individual pillars and magnetostatic interactions between neighboring pillars.

Capacitive and photocatalytic performance of Bi{sub 2}S{sub 3} nanostructures synthesized by solvothermal method

Energy Technology Data Exchange (ETDEWEB)

Liang, Kangqiang, E-mail: liang_kangqiang@126.com [School of Physics and Electronics, Shandong Normal University, Jinan 250014 (China); Wang, Chenggang, E-mail: ujnsps_wangchg@163.com [School of Physics and Technology, University of Jinan, 336 West Road of Nan Xinzhuang, Jinan, 250022, Shandong Province (China); Xu, Xijin, E-mail: sps_xuxj@ujn.edu.cn [School of Physics and Technology, University of Jinan, 336 West Road of Nan Xinzhuang, Jinan, 250022, Shandong Province (China); Key Laboratory for Photonic and Electric Bandgap Materials, Ministry of Education, Harbin Normal University, Harbin, 150025 (China); Leng, Jiancai, E-mail: jiancaileng@qlu.edu.cn [School of Science, Qilu University of Technology, Jinan 250353 (China); Ma, Hong, E-mail: mahong@sdnu.edu.cn [School of Physics and Electronics, Shandong Normal University, Jinan 250014 (China)

2017-02-12

Different Bi{sub 2}S{sub 3} nanoarchitectures (nanorods and nanobelts) were successfully synthesized with a facile solvothermal method at different temperature. The nanobelts transformed into nanorods when the temperature was 200 °C increased from 150 °C. The nanorod-morphology was kept even the temperature was further increased. The galvanostatic charge/discharge performance showed that the prepared Bi{sub 2}S{sub 3} nanorods had good performance of discharge efficiency at current density from 1 A g{sup −1} to 4 A g{sup −1}. The specific capacitance was 270 F g{sup −1} at a current density of 1 A g{sup −1}. Furthermore, the nanorods were also used as the efficient UV-light photocatalysts for the degradation of Rhodamine B (RhB), which showed almost complete degradation (∼87%) of RhB dye at 100 min. - Highlights: • Bi{sub 2}S{sub 3} nanorods were successfully synthesized with a facile solvothermal method. • The specific capacitance can be 270 F g{sup −1} at a current density of 1 A g{sup −1}. • 87% of RhB dye can be degraded at 100 min.

Convenient hydrothermal decomposition process for preparation of nanocrystalline mineral Cu3BiS3 and Pb1-xBi2x/3S

International Nuclear Information System (INIS)

Hu Junqing; Deng Bin; Wang Chunrui; Tang Kaibin; Qian Yitai

2003-01-01

Mineral nanocrystalline Cu 3 BiS 3 and Pb 1-x Bi 2x/3 S (or Bi 0.22 Pb 0.89 S 1.22 ) have been prepared at low synthetic temperature of 100-150 deg. C by convenient hydrothermal decomposition process. X-ray powder diffraction, transmission electron microscopy, X-ray photoelectron spectra, and element analysis were used to characterize and measure the samples. The as-prepared Cu 3 BiS 3 sample consisted of whisker-like particles with an average size of 50x10 nm 2 and the Pb 1-x Bi 2x/3 S sample displayed aggregative particles with size in the range of 30-50 nm. Preliminary results showed that the prepared precursors, reaction temperature and time played a role in the formation of the final products. A possible reaction mechanism was also discussed briefly

High thermoelectric properties of (Sb, Bi)2Te3 nanowire arrays by tilt-structure engineering

Science.gov (United States)

Tan, Ming; Hao, Yanming; Deng, Yuan; Chen, Jingyi

2018-06-01

In this paper, we present an innovative tilt-structure design concept for (Sb, Bi)2Te3 nanowire array assembled by high-quality nanowires with well oriented growth, utilizing a simple vacuum thermal evaporation technique. The unusual tilt-structure (Sb, Bi)2Te3 nanowire array with a tilted angle of 45° exhibits a high thermoelectric dimensionless figure-of-merit ZT = 1.72 at room temperature. The relatively high ZT value in contrast to that of previously reported (Sb, Bi)2Te3 materials and the vertical (Sb, Bi)2Te3 nanowire arrays evidently reveals the crucial role of the unique tilt-structure in favorably influencing carrier and phonon transport properties, resulting in a significantly improved ZT value. The transport mechanism of such tilt-structure is proposed and investigated. This method opens a new approach to optimize nano-structure in thin films for next-generation thermoelectric materials and devices.

Study of the circular photo-galvanic effect in electrically gated (Bi,Sb)2Te3 thin films

Science.gov (United States)

Pan, Yu; Pillsbury, Timothy; Richardella, Anthony; Flanagan, Thomas; Samarth, Nitin

Illumination with circularly polarized light is known to produce a helicity dependent photocurrent in topological insulators such as Bi2Se3 [Nature Nanotech. 7, 96 (2012)]. Symmetry considerations suggest that this ``circular photo-galvanic effect'' (CPGE) arises purely from the surface. However, whether or not the CPGE is directly related to optical excitations from the helical surface states is still under debate. To clarify the origin of the CPGE, we first compare the helicity dependent photocurrent in intrinsic (Bi,Sb)2Te3 to Cr doped (Bi,Sb)2Te3 thin films in which the Dirac surface states are perturbed by magnetic coupling. Secondly, we discuss the tunable CPGE in electrically gated (Bi,Sb)2Te3 thin films excited by optical excitations at different wavelengths. The dependence on the chemical potential and the photon energy of the excitation unveils the origin of the CPGE. Funded by ONR.

Influence of the bismuth deficit on the structural and electric properties of the Bi{sub 2}Sr{sub 2}CaCu{sub 2}O{sub y} thin films synthesized by molecular beam epitaxy

Energy Technology Data Exchange (ETDEWEB)

Alami, H.El.; Rannou, I.; Deville Cavellin, C

2004-07-15

BiSrCaCuO thin films were grown on (1 0 0) SrTiO3 substrates by molecular beam epitaxy (MBE) with variation of the Bi deposition time. A new 2x212 family with x varied between 1 and 0 was grown. The X-ray study, the Rutherford back scattering (RBS), reflection high energy electron diffraction (RHEED) and atomic force microscopy (AFM) were used to characterize the films. It was shown that the growth method used leads to intergrowth nanostructures. The transport measurements of BiSrCaCuO thin films were performed. The results analysed using the theory of percolation show a 2D character of conductivity in the films studied.

Effect of preparation conditions on the properties of Cu{sub 3}BiS{sub 3} thin films grown by a two - step process

Energy Technology Data Exchange (ETDEWEB)

Mesa, F; Gordillo, G, E-mail: fgmesar@unal.edu.c, E-mail: ggordillog@unal.edu.c [Departamento de Fisica, Universidad Nacional de Colombia, Bogota Cr.30 No 45-03 (Colombia)

2009-05-01

Cu{sub 3}BiS{sub 3} thin films were prepared on soda-lime glass substrates by co-evaporation of the precursors in a two-step process; for that, the metallic precursors were evaporated from a tungsten boat in presence of elemental sulfur evaporated from a tantalum effusion cell. The films were characterized by spectral transmittance, atomic force microscopy AFM and x-ray diffraction (XRD) measurements to investigate the effect of the growth conditions on the optical, morphological and structural properties. The results revealed that, independently of the deposition conditions, the films grow only in the orthorhombic Cu{sub 3}BiS{sub 3} phase. It was also found that the Cu{sub 3}BiS{sub 3} films present p-type conductivity, a high absorption coefficient (greater than 10{sup 4} cm{sup -1}) and an energy band gap Eg of about 1.41 eV, indicating that this compound has good properties to perform as absorbent layer in thin film solar cells.

Preparation of nanostructured PbS thin films as sensing element for NO{sub 2} gas

Energy Technology Data Exchange (ETDEWEB)

Kaci, S., E-mail: k_samira05@yahoo.fr [Centre de Recherche en Technologie des Semi-conducteurs pour l’Energétique (CRTSE) Division Couches Minces et Interfaces, 02 Bd Frantz Fanon, B.P. 140, 7 Merveilles, 16038 Algiers (Algeria); Keffous, A.; Hakoum, S. [Centre de Recherche en Technologie des Semi-conducteurs pour l’Energétique (CRTSE) Division Couches Minces et Interfaces, 02 Bd Frantz Fanon, B.P. 140, 7 Merveilles, 16038 Algiers (Algeria); Trari, M. [Université des Sciences et Technologies Houari Boumediene (USTHB), Laboratoire de Stockage et de Valorisation des Eneriges Renouvelables, Faculté de Chimie, BP 32, EL Alia, 16111 Bab Ezzouar, Algiers (Algeria); Mansri, O.; Menari, H. [Centre de Recherche en Technologie des Semi-conducteurs pour l’Energétique (CRTSE) Division Couches Minces et Interfaces, 02 Bd Frantz Fanon, B.P. 140, 7 Merveilles, 16038 Algiers (Algeria)

2014-06-01

In this work, we demonstrate that semiconducting films of A{sub IV}B{sub VI} compounds, in particular, of nanostructured lead sulfide (PbS) which prepared by chemical bath deposition (CBD), can be used as a sensing element for nitrogen dioxide (NO{sub 2}) gas. The CBD method is versatile, simple in implementation and gives homogeneous semiconductor structures. We have prepared PbS nanocrystalline thin film at different reaction baths and temperatures. In the course of deposition, variable amounts of additives, such as organic substances among them, were introduced into the baths. The energy dispersive analysis (EDX) confirms the chemical composition of PbS films. A current–voltage (I–V) characterization of Pd/nc-PbS/a-SiC:H pSi(100)/Al Schottky diode structures were studied in the presence of NO{sub 2} gas. The gas sensing behavior showed that the synthesized PbS nanocrystalline thin films were influenced by NO{sub 2} gas at room temperature. The results can be used for developing an experimental sensing element based on chemically deposited nanostructured PbS films which can be applicable in gas sensors.

2D double-layer-tube-shaped structure Bi2S3/ZnS heterojunction with enhanced photocatalytic activities

International Nuclear Information System (INIS)

Gao, Xiaoming; Wang, Zihang; Fu, Feng; Li, Xiang; Li, Wenhong

2015-01-01

Bi 2 S 3 /ZnS heterojunction with 2D double-layer-tube-shaped structures was prepared by the facile synthesis method. The corresponding relationship was obtained among loaded content to phase, morphology, and optical absorption property of Bi 2 S 3 /ZnS composite. The results shown that Bi 2 S 3 loaded could evidently change the crystallinity of ZnS, enhance the optical absorption ability for visible light of ZnS, and improve the morphologies and microstructure of ZnS. The photocatalytic activities of the Bi 2 S 3 /ZnS sample were evaluated for the photodegradation of phenol and desulfurization of thiophene under visible light irradiation. The results showed that Bi 2 S 3 loaded greatly improved the photocatalytic activity of ZnS, and the content of loaded Bi 2 S 3 had an impact on the catalytic activity of ZnS. Moreover, the mechanism of enhanced photocatalytic activity was also investigated by analysis of relative band positions of Bi 2 S 3 and ZnS, and photo-generated hole was main active radicals during photocatalytic oxidation process

2D double-layer-tube-shaped structure Bi2S3/ZnS heterojunction with enhanced photocatalytic activities

Science.gov (United States)

Gao, Xiaoming; Wang, Zihang; Fu, Feng; Li, Xiang; Li, Wenhong

2015-10-01

Bi2S3/ZnS heterojunction with 2D double-layer-tube-shaped structures was prepared by the facile synthesis method. The corresponding relationship was obtained among loaded content to phase, morphology, and optical absorption property of Bi2S3/ZnS composite. The results shown that Bi2S3 loaded could evidently change the crystallinity of ZnS, enhance the optical absorption ability for visible light of ZnS, and improve the morphologies and microstructure of ZnS. The photocatalytic activities of the Bi2S3/ZnS sample were evaluated for the photodegradation of phenol and desulfurization of thiophene under visible light irradiation. The results showed that Bi2S3 loaded greatly improved the photocatalytic activity of ZnS, and the content of loaded Bi2S3 had an impact on the catalytic activity of ZnS. Moreover, the mechanism of enhanced photocatalytic activity was also investigated by analysis of relative band positions of Bi2S3 and ZnS, and photo-generated hole was main active radicals during photocatalytic oxidation process.

Magneto-optical properties of BiFeO3 thin films using surface plasmon resonance technique

International Nuclear Information System (INIS)

Paliwal, Ayushi; Sharma, Anjali; Tomar, Monika; Gupta, Vinay

2014-01-01

Indigeneously assembled surface plasmon resonance (SPR) set up has been exploited to study the magnetic field dependent optical properties of BiFeO 3 thin films. BiFeO 3 thin films have been deposited onto gold (Au) coated glass prism by using pulsed laser deposition technique. The surface plasmon modes in prism/Au/BiFeO 3 /air structure have been excited in Kretschmann configuration at the interface of Au/BiFeO 3 thin films. The SPR reflectance curves obtained for prism/Au/BiFeO 3 /air structure were utilized to investigate the optical properties of BiFeO 3 thin films at optical frequency (λ=633 nm) as a function of applied magnetic field. SPR curves shows a continuous shift towards lower angles with increasing applied magnetic field, which indicate the promising application of ferromagnetic BiFeO 3 film as a magnetic field sensor. Complex dielectric constant of deposited BiFeO 3 film was determined by fitting the experimental SPR data with Fresnel's equations. The variation of complex dielectric constant and refractive index of BiFeO 3 film was studied with increase in magnetic field, and the sensitivity of magnetic field sensor was found to be about 0.52 RIU/T

Bi2S3microspheres grown on graphene sheets as low-cost counter-electrode materials for dye-sensitized solar cells

Science.gov (United States)

Li, Guang; Chen, Xiaoshuang; Gao, Guandao

2014-02-01

In this work, we synthesized 3D Bi2S3 microspheres comprised of nanorods grown along the (211) facet on graphene sheets by a solvothermal route, and investigated its catalytic activities through I-V curves and conversion efficiency tests as the CE in DSSCs. Although the (211) facet has a large band gap for a Bi2S3 semiconductor, owing to the introduction of graphene into the system, its short-circuit current density, open-circuit voltage, fill factor, and efficiency were Jsc = 12.2 mA cm-2, Voc = 0.75 V, FF = 0.60, and η = 5.5%, respectively. By integrating it with graphene sheets, our material achieved the conversion efficiency of 5.5%, which is almost triple the best conversion efficiency value of the DSSCs with (211)-faceted 3D Bi2S3 without graphene (1.9%) reported in the latest literature. Since this conversion-efficient 3D material grown on the graphene sheets significantly improves its catalytic properties, it paves the way for designing and applying low-cost Pt-free CE materials in DSSC from inorganic nanostructures.In this work, we synthesized 3D Bi2S3 microspheres comprised of nanorods grown along the (211) facet on graphene sheets by a solvothermal route, and investigated its catalytic activities through I-V curves and conversion efficiency tests as the CE in DSSCs. Although the (211) facet has a large band gap for a Bi2S3 semiconductor, owing to the introduction of graphene into the system, its short-circuit current density, open-circuit voltage, fill factor, and efficiency were Jsc = 12.2 mA cm-2, Voc = 0.75 V, FF = 0.60, and η = 5.5%, respectively. By integrating it with graphene sheets, our material achieved the conversion efficiency of 5.5%, which is almost triple the best conversion efficiency value of the DSSCs with (211)-faceted 3D Bi2S3 without graphene (1.9%) reported in the latest literature. Since this conversion-efficient 3D material grown on the graphene sheets significantly improves its catalytic properties, it paves the way for

Photocatalytic activity of Bi{sub 2}WO{sub 6}/Bi{sub 2}S{sub 3} heterojunctions: the facilitation of exposed facets of Bi{sub 2}WO{sub 6} substrate

Energy Technology Data Exchange (ETDEWEB)

Yan, Long [School of Chemistry and Chemical Engineering, Yulin University, Shaanxi Key Laboratory of Low Metamorphic Coal Clean Utilization, Yulin 71900 (China); School of Chemistry and Chemical Engineering, Yan’an University, Shaanxi Key Laboratory of Chemical Reaction Engineering, Yan’an 716000 (China); Wang, Yufei [School of Chemistry and Chemical Engineering, Yulin University, Shaanxi Key Laboratory of Low Metamorphic Coal Clean Utilization, Yulin 71900 (China); Shen, Huidong; Zhang, Yu [School of Chemistry and Chemical Engineering, Yan’an University, Shaanxi Key Laboratory of Chemical Reaction Engineering, Yan’an 716000 (China); Li, Jian [School of Chemistry and Chemical Engineering, Yulin University, Shaanxi Key Laboratory of Low Metamorphic Coal Clean Utilization, Yulin 71900 (China); Wang, Danjun, E-mail: yulyanlong@aliyun.com [School of Chemistry and Chemical Engineering, Yan’an University, Shaanxi Key Laboratory of Chemical Reaction Engineering, Yan’an 716000 (China)

2017-01-30

Highlights: • Bi{sub 2}S{sub 3}/Bi{sub 2}WO{sub 6} hybrids with exposed (020) Bi{sub 2}WO{sub 6} facets have been synthesized. • X-ray photoelectron spectroscopy reveals that a small amount of Bi{sub 2}S{sub 3} was formed. • The enhanced photoactivity of hybrids is due to heterojunction and (020) facets. • A possible photocatalytic degradation mechanism is proposed. - Abstract: Bi{sub 2}S{sub 3}/Bi{sub 2}WO{sub 6} hybrid architectures with exposed (020) Bi{sub 2}WO{sub 6} facets have been synthesized via a controlled anion exchange approach. X-ray photoelectron spectroscopy (XPS) reveals that a small amount of Bi{sub 2}S{sub 3} was formed on the surface of Bi{sub 2}WO{sub 6} during the anion exchange process, thus leading to the transformation from the Bi{sub 2}WO{sub 6} to Bi{sub 2}S{sub 3}/Bi{sub 2}WO{sub 6}. A rhodamine B (RhB) aqueous solution was chosen as model organic pollutants to evaluate the photocatalytic activities of the Bi{sub 2}S{sub 3}/Bi{sub 2}WO{sub 6} catalysts. Under visible light irradiation, the Bi{sub 2}S{sub 3}/Bi{sub 2}WO{sub 6}-TAA displayed the excellent visible light photoactivities compared with pure Bi{sub 2}S{sub 3}, Bi{sub 2}WO{sub 6} and other composite photocatalysts. The efficient photocatalytic activity of the Bi{sub 2}S{sub 3}/Bi{sub 2}WO{sub 6}-TAA composite microspheres was ascribed to the constructed heterojunctions and the inner electric field caused by the exposed (020) Bi{sub 2}WO{sub 6} facets. Active species trapping experiments revealed that h{sup +} and O{sub 2}·{sup −} are the main active species in the photocatalytic process. Furthermore, the as-obtained photocatalysts showed good photocatalytic activity after four recycles. The results presented in this study provide a new concept for the rational design and development of highly efficient photocatalysts.

The effect of the sulfur concentration on the phase transformation from the mixed CuO-Bi{sub 2}O{sub 3} system to Cu{sub 3}BiS{sub 3} during the sulfurization process

Energy Technology Data Exchange (ETDEWEB)

Zhang, Lijian; Jin, Xin; Yuan, Chenchen; Jiang, Guoshun; Liu, Weifeng, E-mail: liuwf@ustc.edu.cn; Zhu, Changfei, E-mail: cfzhu@ustc.edu.cn

2016-12-15

Highlights: • Cu{sub 3}BiS{sub 3} thin films were creatively fabricated by sulfurizing metal oxide precursor. • The phase transformation mechanism during the sulfurization process was studied. • The reason why the excess S restrained the formation of Cu{sub 3}BiS{sub 3} was discussed. • The effect of temperature on film morphology and bandgap was studied. - Abstract: The ternary semiconductor Cu{sub 3}BiS{sub 3}, as a promising light-absorber material for thin film solar cells, was creatively synthesized by sulfurizing the mixed metal oxides precursor film deposited by spin-coating chemical solution method. Two kinds of sulfurization techniques were introduced to study the effect of the sulfur concentration on the phase formation for the pure Cu{sub 3}BiS{sub 3}. It was found that Cu-poor S-rich phases such as Cu{sub 3}Bi{sub 3}S{sub 7} and Cu{sub 4}Bi{sub 4}S{sub 9} were easily generated at high S concentration and then can transform to Cu{sub 3}BiS{sub 3} phase by a simple desulphurization process, which means the sulfur concentration had a significant influence on the formation of Cu{sub 3}BiS{sub 3} during the sulfurization process. The probable transformation mechanism from the mixed metal oxides to the pure Cu{sub 3}BiS{sub 3} phase during the sulfurization process was studied in detail through the XRD analysis and thermodynamic calculation. In addition, the electrical properties were characterized by Hall measurement and the effects of sulfurization temperature on the phase transformation, morphology and optical band gap of the absorber layer were also studied in detail.

Growth behavior of Bi{sub 2}Te{sub 3} and Sb{sub 2}Te{sub 3} thin films on graphene substrate grown by plasma-enhanced chemical vapor deposition

Energy Technology Data Exchange (ETDEWEB)

Lee, Chang Wan [Thin Film Materials Research Group, Korea Research Institute of Chemical Technology, Daejeon (Korea, Republic of); School of Electrical and Electronic Engineering, Yonsei University, Seoul (Korea, Republic of); Kim, Gun Hwan; Kang, Min A.; An, Ki-Seok; Lee, Young Kuk [Thin Film Materials Research Group, Korea Research Institute of Chemical Technology, Daejeon (Korea, Republic of); Kang, Seong Gu [School of Electrical Engineering and Computer Science, Gwangju Institute of Science and Technology, Gwangju (Korea, Republic of); Kim, Hyungjun [School of Electrical and Electronic Engineering, Yonsei University, Seoul (Korea, Republic of)

2017-03-15

A comparative study of the substrate effect on the growth mechanism of chalcogenide Bi{sub 2}Te{sub 3} and Sb{sub 2}Te{sub 3} thin films was carried out. Obvious microstructural discrepancy in both the as-deposited Bi{sub 2}Te{sub 3} and Sb{sub 2}Te{sub 3} thin films was observed when grown on graphene or SiO{sub 2}/Si substrate. Bi{sub 2}Te{sub 3} and Sb{sub 2}Te{sub 3} thin films deposited on the graphene substrate were observed to be grown epitaxially along c-axis and show very smooth surface compared to that on SiO{sub 2}/Si substrate. Based on the experimental results of this study, the initial adsorption sites on graphene substrate during deposition process, which had been discussed theoretically, could be demonstrated empirically. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Ultrathin Topological Insulator Bi 2 Se 3 Nanoribbons Exfoliated by Atomic Force Microscopy

KAUST Repository

Hong, Seung Sae; Kundhikanjana, Worasom; Cha, Judy J.; Lai, Keji; Kong, Desheng; Meister, Stefan; Kelly, Michael A.; Shen, Zhi-Xun; Cui, Yi

2010-01-01

Ultrathin topological insulator nanostructures, in which coupling between top and bottom surface states takes place, are of great intellectual and practical importance. Due to the weak van der Waals interaction between adjacent quintuple layers (QLs), the layered bismuth selenide (Bi2Se 3), a single Dirac-cone topological insulator with a large bulk gap, can be exfoliated down to a few QLs. In this paper, we report the first controlled mechanical exfoliation of Bi2Se3 nanoribbons (>50 QLs) by an atomic force microscope (AFM) tip down to a single QL. Microwave impedance microscopy is employed to map out the local conductivity of such ultrathin nanoribbons, showing drastic difference in sheet resistance between 1-2 QLs and 4-5 QLs. Transport measurement carried out on an exfoliated (>5 QLs) Bi2Se3 device shows nonmetallic temperature dependence of resistance, in sharp contrast to the metallic behavior seen in thick (>50 QLs) ribbons. These AFM-exfoliated thin nanoribbons afford interesting candidates for studying the transition from quantum spin Hall surface to edge states. © 2010 American Chemical Society.

Ultrathin Topological Insulator Bi 2 Se 3 Nanoribbons Exfoliated by Atomic Force Microscopy

KAUST Repository

Hong, Seung Sae

2010-08-11

Ultrathin topological insulator nanostructures, in which coupling between top and bottom surface states takes place, are of great intellectual and practical importance. Due to the weak van der Waals interaction between adjacent quintuple layers (QLs), the layered bismuth selenide (Bi2Se 3), a single Dirac-cone topological insulator with a large bulk gap, can be exfoliated down to a few QLs. In this paper, we report the first controlled mechanical exfoliation of Bi2Se3 nanoribbons (>50 QLs) by an atomic force microscope (AFM) tip down to a single QL. Microwave impedance microscopy is employed to map out the local conductivity of such ultrathin nanoribbons, showing drastic difference in sheet resistance between 1-2 QLs and 4-5 QLs. Transport measurement carried out on an exfoliated (>5 QLs) Bi2Se3 device shows nonmetallic temperature dependence of resistance, in sharp contrast to the metallic behavior seen in thick (>50 QLs) ribbons. These AFM-exfoliated thin nanoribbons afford interesting candidates for studying the transition from quantum spin Hall surface to edge states. © 2010 American Chemical Society.

Photoconductivity in BiFeO3 thin films

Science.gov (United States)

Basu, S. R.; Martin, L. W.; Chu, Y. H.; Gajek, M.; Ramesh, R.; Rai, R. C.; Xu, X.; Musfeldt, J. L.

2008-03-01

The optical properties of epitaxial BiFeO3 thin films have been characterized in the visible range. Variable temperature spectra show an absorption onset near 2.17eV, a direct gap (2.667±0.005eV at 300K), and charge transfer excitations at higher energy. Additionally, we report photoconductivity in BiFeO3 films under illumination from a 100mW /cm2 white light source. A direct correlation is observed between the magnitude of the photoconductivity and postgrowth cooling pressure. Dark conductivities increased by an order of magnitude when comparing films cooled in 760 and 0.1Torr. Large increases in photoconductivity are observed in light.

Polycrystalline and Mesoporous 3-D Bi2O3 Nanostructured Negatrodes for High-Energy and Power-Asymmetric Supercapacitors: Superfast Room-Temperature Direct Wet Chemical Growth.

Science.gov (United States)

Shinde, Nanasaheb M; Xia, Qi Xun; Yun, Je Moon; Mane, Rajaram S; Kim, Kwang Ho

2018-04-04

Superfast (≤10 min) room-temperature (300 K) chemical synthesis of three-dimensional (3-D) polycrystalline and mesoporous bismuth(III) oxide (Bi 2 O 3 ) nanostructured negatrode (as an abbreviation of negative electrode) materials, viz., coconut shell, marigold, honey nest cross section and rose with different surface areas, charge transfer resistances, and electrochemical performances essential for energy storage, harvesting, and even catalysis devices, are directly grown onto Ni foam without and with poly(ethylene glycol), ethylene glycol, and ammonium fluoride surfactants, respectively. Smaller diffusion lengths, caused by the involvement of irregular crevices, allow electrolyte ions to infiltrate deeply, increasing the utility of inner active sites for the following electrochemical performance. A marigold 3-D Bi 2 O 3 electrode of 58 m 2 ·g -1 surface area has demonstrated a specific capacitance of 447 F·g -1 at 2 A·g -1 and chemical stability of 85% even after 5000 redox cycles at 10 A·g -1 in a 6 M KOH electrolyte solution, which were higher than those of other morphology negatrode materials. An asymmetric supercapacitor (AS) device assembled with marigold Bi 2 O 3 negatrode and manganese(II) carbonate quantum dots/nickel hydrogen-manganese(II)-carbonate (MnCO 3 QDs/NiH-Mn-CO 3 ) positrode corroborates as high as 51 Wh·kg -1 energy at 1500 W·kg -1 power and nearly 81% cycling stability even after 5000 cycles. The obtained results were comparable or superior to the values reported previously for other Bi 2 O 3 morphologies. This AS assembly glowed a red-light-emitting diode for 20 min, demonstrating the scientific and industrial credentials of the developed superfast Bi 2 O 3 nanostructured negatrodes in assembling various energy storage devices.

Analysis of multiferroic properties in BiMnO3 thin films

International Nuclear Information System (INIS)

Grizalez, M; Mendoza, G A; Prieto, P

2009-01-01

Textured BiMnO 3 [111] thin films on SrTiO 3 (100) and Pt/TiO 2 /SiO 2 substrates were grown via r.f. magnetron sputtering (13.56 MHz). The XRD spectra confirmed a monoclinic structure and high-quality textured films for the BiMnO 3 films. The films grown on SrTiO 3 (100) showed higher crystalline quality than those developed on Pt/TiO 2 /SiO 2 . Through optimized oxygen pressure of 5x10 -2 mbar during the r.f. sputtering deposition, the crystalline orientation of the BiMnO 3 film was improved with respect to the previously reported value of 2x10 -1 mbar. The values of spontaneous polarization (P s ), remnant polarization (P r ), and coercive field (F c ) from ferroelectric hysteresis loops (P-E) at different temperatures were also obtained. Samples with higher crystalline order revealed better dielectric properties (high P s and P r values and a low F c ). For films on both types of substrates, the ferroelectric behavior was found to persist up to 400K. Measurements at higher temperatures were difficult to obtain given the increased conductivity of the films. Magnetic hysteresis loops from 5K to 120K were obtained for BiMnO 3 films grown on SrTiO 3 and Pt/TiO 2 /SiO 2 substrates. The results suggested that the coexistence of the magnetic and electric phases persists up to 120K.

Bi-epitaxial YBa{sub 2}Cu{sub 3}O{sub x} Thin Films on Tilted-axes NdGaO{sub 3} Substrates with CeO{sub 2} Seeding Layer

Energy Technology Data Exchange (ETDEWEB)

Mozhaev, P B [Institute of Physics and Technology RAS, 117218, Moscow (Russian Federation); Mozhaeva, J E [Institute of Physics and Technology RAS, 117218, Moscow (Russian Federation); Jacobsen, C S [Technical University of Denmark, Physics Department, Lyngby, DK-2800, Denmark (Denmark); Hansen, J Bindslev [Technical University of Denmark, Physics Department, Lyngby, DK-2800, Denmark (Denmark); Bdikin, I K [CICECO, University of Aveiro, Aveiro, 3810-193 (Portugal); Luzanov, V A [Institute of Radio Engineering and Electronics, Moscow, 125009 (Russian Federation); Kotelyanskii, I M [Institute of Radio Engineering and Electronics, Moscow, 125009 (Russian Federation); Zybtsev, S G [Institute of Radio Engineering and Electronics, Moscow, 125009 (Russian Federation)

2006-06-01

Bi-epitaxial YBa{sub 2}Cu{sub 3}O{sub x} (YBCO) thin films with out-of-plane tilt angle in the range 18 - 27{sup 0} were manufactured using pulsed laser deposition on NdGaO{sub 3} tilted-axes substrates with CeO{sub 2} seeding layers. The YBCO thin film orientation over the seeding layer depended on deposition conditions. Removal of the seeding layer from part of the substrate surface by ionbeam etching resulted in formation of a bi-epitaxial thin film with different c-axis orientation of two parts of the film. The bi-epitaxial film orientation and structure were studied using X-ray diffraction techniques, and surface morphology was observed with atomic force microscope (AFM). Photolithography and ion-beam etching techniques were used for patterning bi-epitaxial thin films. Electrical characterization of the obtained structures was performed.

Magneto-optical properties of BiFeO{sub 3} thin films using surface plasmon resonance technique

Energy Technology Data Exchange (ETDEWEB)

Paliwal, Ayushi; Sharma, Anjali [Department of Physics and Astrophysics, University of Delhi, Delhi 110007 (India); Tomar, Monika [Physics Department, Miranda House, University of Delhi, Delhi 110007 (India); Gupta, Vinay, E-mail: drguptavinay@gmail.com [Department of Physics and Astrophysics, University of Delhi, Delhi 110007 (India)

2014-09-01

Indigeneously assembled surface plasmon resonance (SPR) set up has been exploited to study the magnetic field dependent optical properties of BiFeO{sub 3} thin films. BiFeO{sub 3} thin films have been deposited onto gold (Au) coated glass prism by using pulsed laser deposition technique. The surface plasmon modes in prism/Au/BiFeO{sub 3}/air structure have been excited in Kretschmann configuration at the interface of Au/BiFeO{sub 3} thin films. The SPR reflectance curves obtained for prism/Au/BiFeO{sub 3}/air structure were utilized to investigate the optical properties of BiFeO{sub 3} thin films at optical frequency (λ=633 nm) as a function of applied magnetic field. SPR curves shows a continuous shift towards lower angles with increasing applied magnetic field, which indicate the promising application of ferromagnetic BiFeO{sub 3} film as a magnetic field sensor. Complex dielectric constant of deposited BiFeO{sub 3} film was determined by fitting the experimental SPR data with Fresnel's equations. The variation of complex dielectric constant and refractive index of BiFeO{sub 3} film was studied with increase in magnetic field, and the sensitivity of magnetic field sensor was found to be about 0.52 RIU/T.

Influence of Fe substitution on structural and magnetic features of BiMn2O5 nanostructures

Science.gov (United States)

Gaikwad, Vishwajit M.; Goyal, Saveena; Yanda, Premakumar; Sundaresan, A.; Chakraverty, Suvankar; Ganguli, Ashok K.

2018-04-01

Nanostructures of complex oxides [BiFexMn2-xO5 (x = 0, 1, 2)] have been designed to study their structural, optical and magnetic behaviour. X-ray diffraction data (XRD) revealed orthorhombic phase with Pbam space group. Noticeable expansion in unit cell parameters has been found from BiMn2O5 (x = 0) to BiFe2O4.5 (x = 2). The observed structural changes via tuning of B-site (x = 0-2) played an important role in overall magnetic properties. Transmission electron microscopic images confirm that the average particle size of all the materials are in nano domain range with different morphologies. From optical studies, it has been found that the observed energy band gap values are strongly related to 3d electron numbers. These values appear to be larger than that reported for bulk. Isothermal magnetization plots (at 5 K) show increase in coercivity (Hc) from x = 0 to x = 2. Temperature dependent magnetization studies implied anti-ferromagnetic interactions for BiMn2O5, frustrated magnet for BiFeMnO5 and ferromagnetic behaviour for BiFe2O4.5. Ferromagnetic state of nanostructured BiFe2O4.5 is in contrast with its bulk counterparts.

Photoelectrochemical Performance Observed in Mn-Doped BiFeO3 Heterostructured Thin Films

Directory of Open Access Journals (Sweden)

Hao-Min Xu

2016-11-01

Full Text Available Pure BiFeO3 and heterostructured BiFeO3/BiFe0.95Mn0.05O3 (5% Mn-doped BiFeO3 thin films have been prepared by a chemical deposition method. The band structures and photosensitive properties of these films have been investigated elaborately. Pure BiFeO3 films showed stable and strong response to photo illumination (open circuit potential kept −0.18 V, short circuit photocurrent density was −0.023 mA·cm−2. By Mn doping, the energy band positions shifted, resulting in a smaller band gap of BiFe0.95Mn0.05O3 layer and an internal field being built in the BiFeO3/BiFe0.95Mn0.05O3 interface. BiFeO3/BiFe0.95Mn0.05O3 and BiFe0.95Mn0.05O3 thin films demonstrated poor photo activity compared with pure BiFeO3 films, which can be explained by the fact that Mn doping brought in a large amount of defects in the BiFe0.95Mn0.05O3 layers, causing higher carrier combination and correspondingly suppressing the photo response, and this negative influence was more considerable than the positive effects provided by the band modulation.

Facile fabrication of Bi_2S_3/SnS_2 heterojunction photocatalysts with efficient photocatalytic activity under visible light

International Nuclear Information System (INIS)

Gao, Xiaomin; Huang, Guanbo; Gao, Haihuan; Pan, Cheng; Wang, Huan; Yan, Jing; Liu, Yu; Qiu, Haixia; Ma, Ning; Gao, Jianping

2016-01-01

In this work, Bi_2S_3/SnS_2 heterojunction photocatalysts were prepared by combining a hydrothermal technique and a facile in situ growth method. The nanocomposites were characterized by X-ray diffraction, scanning electron microscopy, transmission electron microscopy, inductively coupled plasma spectroscopy, X-ray photoelectron spectroscopy, UV–Vis diffusion reflectance spectroscopy and room-temperature photoluminescence spectra. Their photocatalytic performances were evaluated by degrading methyl orange (MO) in aqueous solution (50 mg/L) under visible light (λ > 420 nm) irradiation. It was found that when the mass percentage of Bi_2S_3 in Bi_2S_3/SnS_2 was 7.95 wt%, the as-prepared Bi_2S_3/SnS_2 nanocomposite showed the best photocatalytic activity for the degradation of MO. The highly improved performance of the Bi_2S_3/SnS_2 nanocomposite was mainly ascribed to the efficient charge separation. - Highlights: • Facile fabrication of novel Bi_2S_3/SnS_2 heterojunction photocatalysts. • High-performance photocatalyst for the degradation of organic pollutants. • Good recyclability of catalyst without photo-corrosion. • The photocatalytic mechanism was proposed.

Electronic structure of Fe1.08Te bulk crystals and epitaxial FeTe thin films on Bi2Te3

Science.gov (United States)

Arnold, Fabian; Warmuth, Jonas; Michiardi, Matteo; Fikáček, Jan; Bianchi, Marco; Hu, Jin; Mao, Zhiqiang; Miwa, Jill; Singh, Udai Raj; Bremholm, Martin; Wiesendanger, Roland; Honolka, Jan; Wehling, Tim; Wiebe, Jens; Hofmann, Philip

2018-02-01

The electronic structure of thin films of FeTe grown on Bi2Te3 is investigated using angle-resolved photoemission spectroscopy, scanning tunneling microscopy and first principles calculations. As a comparison, data from cleaved bulk Fe1.08Te taken under the same experimental conditions is also presented. Due to the substrate and thin film symmetry, FeTe thin films grow on Bi2Te3 in three domains, rotated by 0°, 120°, and 240°. This results in a superposition of photoemission intensity from the domains, complicating the analysis. However, by combining bulk and thin film data, it is possible to partly disentangle the contributions from three domains. We find a close similarity between thin film and bulk electronic structure and an overall good agreement with first principles calculations, assuming a p-doping shift of 65 meV for the bulk and a renormalization factor of around two. By tracking the change of substrate electronic structure upon film growth, we find indications of an electron transfer from the FeTe film to the substrate. No significant change of the film’s electronic structure or doping is observed when alkali atoms are dosed onto the surface. This is ascribed to the film’s high density of states at the Fermi energy. This behavior is also supported by the ab initio calculations.

Crystalline structure and XMCD studies of Co40Fe40B20 grown on Bi2Te3, BiTeI and Bi2Se3

OpenAIRE

Kaveev, A. K.; Sokolov, N. S.; Suturin, S. M.; Zhiltsov, N. S.; Golyashov, V. A.; Tereshchenko, O. E.; Prosvirin, I. P.; Kokh, K. A.; Sawada, M.

2018-01-01

Epitaxial films of Co40Fe40B20 (further - CoFeB) were grown on Bi2Te3(001) and Bi2Se3(001) substrates by laser molecular beam epitaxy (LMBE) technique at 200-400C. Bcc-type crystalline structure of CoFeB with (111) plane parallel to (001) plane of Bi2Te3 was observed, in contrast to polycrystalline CoFeB film formed on Bi2Se3(001) at RT using high-temperature seeding layer. Therefore, structurally ordered ferromagnetic thin films were obtained on the topological insulator surface for the firs...

Magnetoelectric coupling effect in transition metal modified polycrystalline BiFeO3 thin films

International Nuclear Information System (INIS)

Sreenivas Puli, Venkata; Kumar Pradhan, Dhiren; Gollapudi, Sreenivasulu; Coondoo, Indrani; Panwar, Neeraj; Adireddy, Shiva; Chrisey, Douglas B.; Katiyar, Ram S.

2014-01-01

Rare-earth (Sm) and transition metal (Co) modified polycrystalline BiFeO 3 (BFO) thin films have been deposited on Pt/TiO 2 /SiO 2 /Si substrate successfully through pulsed laser deposition (PLD) technique. Piezoelectric, leakage current and temperature dependent dielectric and magnetic behaviour were investigated for the films. Typical “butterfly-shaped” loop were observed in BSFCO films with an effective piezoelectric constant (d 33 ) ∼94 pm/V at 0.6 MV/cm. High dielectric constant ∼900 and low dielectric loss ∼0.25 were observed at room temperature. M–H loops have shown relatively high saturation magnetization ∼35 emu/cm 3 at a maximum field of H ∼20 kOe. Enhanced magnetoelectric coupling response is observed under applied magnetic field. The multiferroic, piezoelectric, leakage current behaviours were explored. Such studies should be helpful in designing multiferroic materials based on BSFCO films. - Highlights: • Transition metal modified polycrystalline BiFeO 3 thin films prepared using PLD. • High ME-coupling response was observed in co-substituted BiFeO 3 thin films. • High magnetization ∼35 emu/cm 3 at a maximum field of H ∼20 kOe. • Low leakage current might be due to co-substitution in BiFeO 3 thin films. • A notable piezoelectric constant d 33 ∼94 pm/V was found in BiFeO 3 thin films

Quantum confinement of Bi2S3 in glass with magnetic behavior

Directory of Open Access Journals (Sweden)

Rajendra P. Panmand

2013-02-01

Full Text Available The novel Bi2S3 quantum dots (QDs glass nanosystems with unique magnetic properties have been investigated. The monodispersed QDs of size in the range of 3 to 15 nm were grown in the glass matrix. The optical study of these nanosystems clearly demonstrated the size quantization effect resulting in a pronounced band gap variation with QD size. The magnetic properties of the pristine glass and the Bi2S3 QD glass nanosystems were investigated by VSM and SQUID magnetometer. The pristine glass did not show any ferromagnetism while the Bi2S3 glass nanosystems showed significant and reproducible ferromagnetism. We also investigated the effect of the size of Bi2S3 QDs on the magnetic properties. The saturation magnetization for the 15 nm QD glass-nanosystem (124 memu/g was observed to be higher as compared to the 3nm QD glass nanosystem (58.2 memu/g. The SQUID measurement gave the excellent hysteresis up to 300K. Surprisingly, the bulk Bi2S3 powder is diamagnetic in nature but Bi2S3 quantum dots glass nanosystem showed the ferromagnetic behavior for the first time. The investigated novel QD glass-nanosystem may have a potential application in spintronic devices and most importantly, this nanosystem can be fabricated in any usable shape as per the device requirement.

Enhanced photoelectrochemical activity of electro-synthesized CdS-Bi2S3 composite films grown with self-designed cross-linked structure

International Nuclear Information System (INIS)

Jana, A.; Bhattacharya, C.; Datta, J.

2010-01-01

In the present investigation thin semiconductor films of CdS, Bi 2 S 3 and their intermixed composite films have been electro-synthesized onto conducting glass substrate from nonaqueous bath containing various levels of the precursor salts of Cd 2+ and Bi 3+ . Spectrophotometric measurements determine the band gap energies of the composite films at ∼2.53 eV and ∼1.37 eV corresponding to the binary systems CdS and Bi 2 S 3 , respectively. The film matrices exhibit a unique structure of cross-linked nanoporous Bi 2 S 3 mesh containing spherical shaped CdS crystals distributed uniformly on the top of the surface as detected from the morphological studies through scanning electron microscopy and transmission electron microscopy. X-ray diffraction studies show crystalline structure of the films of which the chemical compositions were determined through energy dispersive analysis of X-ray. The film matrices enriched with Cd exhibit high dielectric property as obtained from the capacitance measurement and substantial thermal stability derived from thermogravimetry and differential thermal analysis. These films are found to be highly fluorescent in nature when subjected to spectrofluorimetric analysis. The Raman spectral data exhibit characteristic peaks that are associated with Cd-S and Bi-S bonds as well as the defects created by metal oxides. The spectrum also demonstrates that the changes in the relative position of the overtone bands are associated with compositional variation of the film surface. The study of electrochemical polarization of different films, derives the inherent stability of the matrices towards dissolution. This was followed by anodic stripping voltammetry to estimate the dissolved cations during polarization. Photoelectrochemical measurements demonstrate n-type semiconductivity of the films with high order of donor density and reasonable photoactivity under illuminated condition. It may be summarized that the blended intermix of CdS-Bi 2 S 3

High pressure synthesis of BiS2

DEFF Research Database (Denmark)

Søndergaard-Pedersen, Simone; Nielsen, Morten Bormann; Bremholm, Martin

crystal structures and electrical properties.1,2 Up until now, the most sulfur rich phase in the Bi-S phase diagram was Bi2S3.3 For BiS2 the Bi atoms have anisotropic charge distribution and more complex structures are expected when comparing the layered structures of transition metal dichalcogenides....... The possibilities of using high pressure synthesis to discover new phases in the Bi-S binary system were investigated as early as the 1960’s.4 The research led to discovery of a compound with BiS2 stoichiometry, but no structure solution of BiS2 was reported. A reason behind making this new phase is to study...... the physical properties since the related compound Bi2S3 is known to be a thermoelectric material.5 In this research the BiS2 compound was synthesized by a high pressure and high temperature method using a multi-anvil large volume press and the structure was solved by single crystal diffraction. The structure...

Magnetoelectric coupling effect in transition metal modified polycrystalline BiFeO{sub 3} thin films

Energy Technology Data Exchange (ETDEWEB)

Sreenivas Puli, Venkata, E-mail: pvsri123@gmail.com [Department of Physics and Engineering Physics, Tulane University, New Orleans, LA 70118 (United States); Department of Physics and Institute of Functional Nanomaterials, University of Puerto Rico, San Juan, PR 00936 (United States); Kumar Pradhan, Dhiren [Department of Physics and Institute of Functional Nanomaterials, University of Puerto Rico, San Juan, PR 00936 (United States); Gollapudi, Sreenivasulu [Department of Physics, Oakland University, Rochester, MI 48309-4401 (United States); Coondoo, Indrani [Department of Materials and Ceramic and CICECO, University of Aveiro, 3810-193 Aveiro (Portugal); Panwar, Neeraj [Department of Physics, Central University of Rajasthan, Bandar Sindri, Kishangarh 305801, Rajasthan (India); Adireddy, Shiva; Chrisey, Douglas B. [Department of Physics and Engineering Physics, Tulane University, New Orleans, LA 70118 (United States); Katiyar, Ram S. [Department of Physics and Institute of Functional Nanomaterials, University of Puerto Rico, San Juan, PR 00936 (United States)

2014-11-15

Rare-earth (Sm) and transition metal (Co) modified polycrystalline BiFeO{sub 3} (BFO) thin films have been deposited on Pt/TiO{sub 2}/SiO{sub 2}/Si substrate successfully through pulsed laser deposition (PLD) technique. Piezoelectric, leakage current and temperature dependent dielectric and magnetic behaviour were investigated for the films. Typical “butterfly-shaped” loop were observed in BSFCO films with an effective piezoelectric constant (d{sub 33}) ∼94 pm/V at 0.6 MV/cm. High dielectric constant ∼900 and low dielectric loss ∼0.25 were observed at room temperature. M–H loops have shown relatively high saturation magnetization ∼35 emu/cm{sup 3} at a maximum field of H ∼20 kOe. Enhanced magnetoelectric coupling response is observed under applied magnetic field. The multiferroic, piezoelectric, leakage current behaviours were explored. Such studies should be helpful in designing multiferroic materials based on BSFCO films. - Highlights: • Transition metal modified polycrystalline BiFeO{sub 3} thin films prepared using PLD. • High ME-coupling response was observed in co-substituted BiFeO{sub 3} thin films. • High magnetization ∼35 emu/cm{sup 3} at a maximum field of H ∼20 kOe. • Low leakage current might be due to co-substitution in BiFeO{sub 3} thin films. • A notable piezoelectric constant d{sub 33} ∼94 pm/V was found in BiFeO{sub 3} thin films.

Ferroelectric properties of sandwich structured (Bi, La)4T3O12/Pb(Zr, Ti)O3/ (Bi, La)4Ti3O12 thin films on Pt/Ti/SiO2/Si substrates

International Nuclear Information System (INIS)

Bao Dinghua; Wakiya, Naoki; Shinozaki, Kazuo; Mizutani, Nobuyasu

2002-01-01

Sandwich structured (Bi, La) 4 Ti 3 O 12 /Pb(Zr, Ti)O 3 /(Bi, La) 4 Ti 3 O 12 thin films were fabricated on Pt/Ti/SiO 2 /Si substrates, with the intention of simultaneously utilizing the advantages of both (Bi, La) 4 Ti 3 O 12 (BLT) and Pb(Zr, Ti)O 3 (PZT) thin films such as non-fatigue behaviours of BLT and good ferroelectric properties of PZT. Both BLT and PZT layers were prepared by a chemical solution deposition technique. The experiments demonstrated that the sandwich structure showed fatigue-free characteristics at least up to 10 10 switching bipolar pulse cycles under 8 V and excellent retention properties. The sandwich structured thin films also exhibited well-defined hysteresis loops with a remanent polarization (2P r ) of 8.8 μC cm -2 and a coercive field (E c ) of 47 kV cm -1 . The room-temperature dielectric constant and dissipation factor were 210 and 0.031, respectively, at a frequency of 100 kHz. These results suggest that this sandwich structure is a promising material combination for ferroelectric memory applications. (author)

Hall Effect and transient surface photovoltage (SPV study of Cu3BiS3 thin films

Directory of Open Access Journals (Sweden)

F. Mesa

2014-03-01

Full Text Available Here, we present the electrical properties of the compound Cu3BiS3 deposited by co-evaporation. This new compound may have the properties necessary to be used as an absorbent layer in solar cells. The samples were characterized by Hall effect and transient surface photovoltage (SPV measurements. Using Hall effect measurements, we found that the concentration of n charge carriers is in the order of 1016 cm-3 irrespective of the Cu/Bi mass ratio. We also found that the mobility of this compound (μ in the order of 4 cm2 V-1s-1 varies according to the transport mechanisms that govern it and are dependent on temperature. Based on the SPV, we found a high density of surface defects, which can be passivated by superimposing a buffer layer over the Cu3BiS3 compound.

Space charge limited current conduction in Bi2Te3 thin films

International Nuclear Information System (INIS)

Sathyamoorthy, R.; Dheepa, J.; Velumani, S.

2007-01-01

Bi 2 Te 3 is known for its large thermoelectric coefficients and is widely used as a material for Peltier devices. Bi 2 Te 3 thin films with thicknesses in the range 125-300 A have been prepared by Flash Evaporation at a pressure of 10 -5 m bar on clean glass substrates at room temperature. An Al-Bi 2 Te 3 -Al sandwich structure has been used for electrical conduction properties in the temperature range 303 to 483 K. I-V characteristics showed Ohmic conduction in the low voltage region. In the higher voltage region, a Space Charge Limited Conduction (SCLC) takes place due to the presence of the trapping level. The transition voltage (V t ), between the Ohmic and the SCLC condition was proportional to the square of thickness. Further evidence for this conduction process was provided by the linear dependence of V t on t 2 and log J on log t. The hole concentration in the films were found to be n 0 = 1.65 * 10 10 m -3 . The carrier mobility increases with increasing temperature whereas the density of trapped charges decreases with increasing temperature. The barrier height decreases with an increase in temperature. The increase in the trapping concentration V t is correlated with ascending the degree of preferred orientation of the highest atomic density plane. The activation energy was estimated and the values found to decrease with increasing applied voltage. The zero field value of the activation energy is found to be 0.4 eV

Analysis of multiferroic properties in BiMnO{sub 3} thin films

Energy Technology Data Exchange (ETDEWEB)

Grizalez, M [Universidad de la Amazonia, Florencia (Colombia); Mendoza, G A [Department of Physics, Universidad Nacional de Colombia, Bogota (Colombia); Prieto, P, E-mail: pprieto@calima.univalle.edu.c [Center of Excellence on Novel Materials - CENM (Colombia)

2009-05-01

Textured BiMnO{sub 3} [111] thin films on SrTiO{sub 3} (100) and Pt/TiO{sub 2}/SiO{sub 2} substrates were grown via r.f. magnetron sputtering (13.56 MHz). The XRD spectra confirmed a monoclinic structure and high-quality textured films for the BiMnO{sub 3} films. The films grown on SrTiO{sub 3} (100) showed higher crystalline quality than those developed on Pt/TiO{sub 2}/SiO{sub 2}. Through optimized oxygen pressure of 5x10{sup -2} mbar during the r.f. sputtering deposition, the crystalline orientation of the BiMnO{sub 3} film was improved with respect to the previously reported value of 2x10{sup -1} mbar. The values of spontaneous polarization (P{sub s}), remnant polarization (P{sub r}), and coercive field (F{sub c}) from ferroelectric hysteresis loops (P-E) at different temperatures were also obtained. Samples with higher crystalline order revealed better dielectric properties (high P{sub s} and P{sub r} values and a low F{sub c}). For films on both types of substrates, the ferroelectric behavior was found to persist up to 400K. Measurements at higher temperatures were difficult to obtain given the increased conductivity of the films. Magnetic hysteresis loops from 5K to 120K were obtained for BiMnO{sub 3} films grown on SrTiO{sub 3} and Pt/TiO{sub 2}/SiO{sub 2} substrates. The results suggested that the coexistence of the magnetic and electric phases persists up to 120K.

Dielectric and piezoelectric properties of lead-free (Bi,Na)TiO3-based thin films

Science.gov (United States)

Abazari, M.; Safari, A.; Bharadwaja, S. S. N.; Trolier-McKinstry, S.

2010-02-01

Dielectric and piezoelectric properties of morphotropic phase boundary (Bi,Na)TiO3-(Bi,K)TiO3-BaTiO3 epitaxial thin films deposited on SrRuO3 coated SrTiO3 substrates were reported. Thin films of 350 nm thickness exhibited small signal dielectric permittivity and loss tangent values of 750 and 0.15, respectively, at 1 kHz. Ferroelectric hysteresis measurements indicated a remanent polarization value of 30 μC/cm2 with a coercive field of 85-100 kV/cm. The thin film transverse piezoelectric coefficient (e31,f) of these films after poling at 600 kV/cm was found to be -2.2 C/m2. The results indicate that these BNT-based thin films are a potential candidate for lead-free piezoelectric devices.

On atomic mechanisms governing the oxidation of Bi2Te3

Science.gov (United States)

Music, Denis; Chang, Keke; Schmidt, Paul; Braun, Felix N.; Heller, Martin; Hermsen, Steffen; Pöllmann, Peter J.; Schulzendorff, Till; Wagner, Cedric

2017-12-01

Oxidation of Bi2Te3 (space group R \\overline{3} m) has been investigated using experimental and theoretical means. Based on calorimetry, x-ray photoelectron spectroscopy and thermodynamic modelling, Bi2Te3 is at equilibrium with Bi2O3 and TeO2, whereby the most stable compound is Bi2Te3, followed by Bi2O3. The reactivity of Bi towards oxygen is expected to be higher than that of Te. This notion is supported by density functional theory. The strongest bond is formed between Bi and Te, followed by Bi-O. This gives rise to unanticipated atomic processes. Dissociatively adsorbed oxygen diffuses through Bi and Te basal planes of Bi2Te3(0 0 0 1) and preferably interacts with Bi. The Te termination considerably retards this process. These findings may clarify conflicting literature data. Any basal plane off-cut or Bi terminations trigger oxidation, but a perfect basal cleavage, where only Te terminations are exposed to air, may be stable for a longer period of time. These results are of relevance for applications in which surfaces are of key importance, such as nanostructured Bi2Te3 thermoelectric devices.

Study of Ho-doped Bi{sub 2}Te{sub 3} topological insulator thin films

Energy Technology Data Exchange (ETDEWEB)

Harrison, S. E. [Department of Physics, Clarendon Laboratory, University of Oxford, Oxford OX1 3PU (United Kingdom); Department of Electrical Engineering, Stanford University, Stanford, California 94305 (United States); Collins-McIntyre, L. J.; Zhang, S. L.; Chen, Y. L.; Hesjedal, T., E-mail: Thorsten.Hesjedal@physics.ox.ac.uk [Department of Physics, Clarendon Laboratory, University of Oxford, Oxford OX1 3PU (United Kingdom); Baker, A. A. [Department of Physics, Clarendon Laboratory, University of Oxford, Oxford OX1 3PU (United Kingdom); Magnetic Spectroscopy Group, Diamond Light Source, Didcot OX11 0DE (United Kingdom); Figueroa, A. I.; Laan, G. van der [Magnetic Spectroscopy Group, Diamond Light Source, Didcot OX11 0DE (United Kingdom); Kellock, A. J.; Pushp, A.; Parkin, S. S. P. [IBM Almaden Research Center, 650 Harry Road, San Jose, California 95120 (United States); Harris, J. S. [Department of Electrical Engineering, Stanford University, Stanford, California 94305 (United States)

2015-11-02

Breaking time-reversal symmetry through magnetic doping of topological insulators has been identified as a key strategy for unlocking exotic physical states. Here, we report the growth of Bi{sub 2}Te{sub 3} thin films doped with the highest magnetic moment element Ho. Diffraction studies demonstrate high quality films for up to 21% Ho incorporation. Superconducting quantum interference device magnetometry reveals paramagnetism down to 2 K with an effective magnetic moment of ∼5 μ{sub B}/Ho. Angle-resolved photoemission spectroscopy shows that the topological surface state remains intact with Ho doping, consistent with the material's paramagnetic state. The large saturation moment achieved makes these films useful for incorporation into heterostructures, whereby magnetic order can be introduced via interfacial coupling.

Synthesis and characterization of Bi2S3 composite nanoparticles with high X-ray absorption

International Nuclear Information System (INIS)

Huang, Huan-Huan; Chen, Jun; Meng, Yuan-Zheng; Yang, Xiao-Quan; Zhang, Ming-Zhen; Yu, Yong; Ma, Zhi-Ya; Zhao, Yuan-Di

2013-01-01

Graphical abstract: - Highlights: • Uniform Bi 2 S 3 nanorods were prepared via a hot injection method. • Bi 2 S 3 nanorods were coated with TEOS and PEG for surface modification. • CT images of Bi 2 S 3 @SiO 2 -PEG are much higher than clinical iobitridol when they have the same concentration. • Cellular toxicity of Bi 2 S 3 @SiO 2 -PEG is low when the probes were directly in contact with tissue fluid. - Abstract: Owing to the high X-ray absorption, Bi 2 S 3 nanocrystals are widely used as CT contrast agents. Here, we prepared uniform Bi 2 S 3 nanorods via a hot injection method using bismuth (III) chloride, sulfur and oleyl amine. The resulting nanocrystals were coated with tetraethylorthosilicate (TEOS) and 2-[methoxy(polyethyleneoxy)propyl]yrimethoxysilane (PEG-silane) for the biological utility. X-ray diffraction (XRD) and transmission electron microscopy (TEM) results showed that the Bi 2 S 3 nanorods had an orthorhombic structure with the length of 14 nm and the diameter of 7 nm, respectively. Composite nanoparticles (0.0226 M) gave a CT number at 550 (HU), which was higher than that of the commercial available iobitridol CT contrast agent. Furthermore, cell experiments revealed that Bi 2 S 3 composite nanoparticles had a low cytotoxicity with a concentration up to 0.01 M of Bi for 24 h

Bi2Se3/CdS/TiO2 hybrid photoelectrode and its band-edge levels

International Nuclear Information System (INIS)

Zhang, Qi; Su, Jun; Zhang, Xianghui; Li, Jian; Zhang, Aiqing; Gao, Yihua

2012-01-01

Highlights: ► CVD synthesis of Bi 2 Se 3 nanoparticles. ► Bi 2 Se 3 and CdS co-sensitized TiO 2 nanorod arrays electrode was assembled by CVD. ► Direct physical contact heterojunctions were formed at the interfaces of electrode. ► Cascade structure of band-edge levels was formed in Bi 2 Se 3 /CdS/TiO 2 electrode. - Abstract: Bismuth selenide (Bi 2 Se 3 ) was chosen as the sensitizer to TiO 2 nanorod (NR) arrays photoelectrode to harvest infrared (IR) light for its narrow band gap. For utilizing more amount of IR solar energy, Bi 2 Se 3 nanoparticles (NPs) were grown up to a relative larger grain size. And, a cadmium sulfide (CdS) NPs intermediate layer was introduced to help, to coordinate, the structure of band-edge levels in Bi 2 Se 3 /CdS/TiO 2 electrode. Here, a chemical vapor deposition (CVD) strategy was introduced to assemble this kind of composite photoelectrode. And a cascade structure of band-edge levels constructed in it when achieving electrostatic equilibrium in Na 2 S/Na 2 SO 3 aqueous solution electrolyte revealed by electrochemical analysis method, which will facilitate the hydrogen generation.

The effect of different annealing temperatures on the structure and luminescence properties of Y{sub 2}O{sub 3}:Bi{sup 3+} thin films fabricated by spin coating

Energy Technology Data Exchange (ETDEWEB)

Yousif, A.; Jafer, R.M.; Som, S. [Department of Physics, University of the Free State, P.O. Box 339, Bloemfontein, ZA 9300 (South Africa); Department of Physics, Faculty of Education, University of Khartoum, P.O. Box 321, 11115 Omdurman (Sudan); Duvenhage, M.M.; Coetsee, E. [Department of Physics, University of the Free State, P.O. Box 339, Bloemfontein, ZA 9300 (South Africa); Swart, H.C., E-mail: swarthc@ufs.ac.za [Department of Physics, University of the Free State, P.O. Box 339, Bloemfontein, ZA 9300 (South Africa)

2016-03-01

Graphical abstract: - Highlights: • Y{sub 2−x}O{sub 3}:Bi{sub x=0.005} thin films were successfully fabricated by the spin coating method. • The Y{sub 2−x}O{sub 3}:Bi{sub x=0.005} thin films were converted into Y{sub 2}Si{sub 2}O{sub 7}:Bi films after annealing. • The conversion affected the PL properties of the Bi{sup +} ion in the newly formed host. • A blue shift in emission colour was observed. - Abstract: This paper reports on the structural, morphology and optical properties of Y{sub 2−x}O{sub 3}:Bi{sub x=0.005} micro-and nanophosphors synthesized via the spin coating method. The influence of different annealing temperatures (900–1200 °C) on the morphology, crystal structure and the photoluminescence (PL) properties of the synthesized films were studied in detail. The crystal structure of the films was investigated with X-ray diffraction. The presence of the three major diffraction peaks with Miller indexes (2 1 1), (2 2 2) and (4 0 0) indicated that the Y{sub 2−x}O{sub 3}:Bi{sub x=0.005} thin films were well-crystallized at 900 °C, 1000 °C, 1100 °C and 1200 °C. Additionally, extra diffraction peaks were observed for the sample that was annealed at 1200 °C. Those extra peaks were due to the formation of the Y{sub 2}Si{sub 2}O{sub 7} phase owing to the annealing induced changes in the crystal structure and chemical composition of the Y{sub 2−x}O{sub 3}:Bi{sub x=0.005} thin film. This may also be attributed to inter diffusion of atomic species between the Si substrate and the Y{sub 2−x}O{sub 3}:Bi{sub x=0.005} thin film at the high annealing temperature. Due to structure-sensitive properties of the Bi{sup 3+} ions, a blue shift of the centre PL emission band from 495 nm to 410 nm was clearly observed and explained in detail. The time-of-flight secondary ion mass spectroscopy results show the Si diffusion from the Si substrate, whereas, the scanning electron microscopy and the atomic force microscopy were used for the morphology

Microwave-assisted hydrothermal synthesis of Bi2S3 nanorods in flower-shaped bundles

International Nuclear Information System (INIS)

Thongtem, Titipun; Pilapong, Chalermchai; Kavinchan, Jutarat; Phuruangrat, Anukorn; Thongtem, Somchai

2010-01-01

Bi 2 S 3 nanorods in flower-shaped bundles were successfully synthesized from the decomposition of Bi-thiourea complexes under the microwave-assisted hydrothermal process. X-ray powder diffraction (XRD) patterns and field emission scanning electron microscopy (FE-SEM) show that Bi 2 S 3 has the orthorhombic phase and appears as nanorods in flower-shaped bundles. A transmission electron microscopic (TEM) study reveals the independent single Bi 2 S 3 nanorods with their growth along the [0 0 1] direction. A possible formation mechanism of Bi 2 S 3 nanorods in flower-shaped bundles is also proposed and discussed. Their UV-vis spectrum shows the absorbance at 596 nm, with its direct energy band gap of 1.82 eV.

Phonon Drag in Thin Films, Cases of Bi2Te3 and ZnTe

Science.gov (United States)

Chi, Hang; Uher, Ctirad

2014-03-01

At low temperatures, in (semi-)conductors subjected to a thermal gradient, charge carriers (electrons and holes) are swept (dragged) by out-of-equilibrium phonons due to strong electron-phonon interaction, giving rise to a large contribution to the Seebeck coefficient called the phonon-drag effect. Such phenomenon was surprisingly observed in our recent transport study of highly mismatched alloys as potential thermoelectric materials: a significant phonon-drag thermopower reaching 1.5-2.5 mV/K was recorded for the first time in nitrogen-doped ZnTe epitaxial layers on GaAs (100). In thin films of Bi2Te3, we demonstrate a spectacular influence of substrate phonons on charge carriers. We show that one can control and tune the position and magnitude of the phonon-drag peak over a wide range of temperatures by depositing thin films on substrates with vastly different Debye temperatures. Our experiments also provide a way to study the nature of the phonon spectrum in thin films, which is rarely probed but clearly important for a complete understanding of thin film properties and the interplay of the substrate and films. This work is supported by the Center for Solar and Thermal Energy Conversion, an Energy Frontier Research Center funded by the U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences under Award Number DE-SC0000957.

Photo-galvanic effect in Bi2Se3 thin films with ionic liquid gating

Science.gov (United States)

Pan, Yu; Richardella, Anthony; Lee, Joon Sue; Flanagan, Thomas; Samarth, Nitin

2013-03-01

A key challenge in three dimensional (3D) topological insulators (TIs) is to reveal the helical spin-polarized surface states via electrical transport measurements. A recent study [Nature Nanotech. 7, 96 (2012)] showed that circularly polarized light can be used to generate and control photocurrents in the 3D TI Bi2Se3, even at photon energies that are well above the bulk band gap. Symmetry considerations suggest that this ``photo-galvanic effect'' arises purely from photo-currents induced in the surface Dirac states. To gain insights into this phenomenon, we have carried out systematic measurements of the photo-galvanic effect in electrically gated MBE-grown Bi2Se3 thin films of varying thickness. By using an ionic liquid as an optically transparent gate, we map out the behavior of the photo-galvanic effect as a function of Fermi energy over a temperature range 5 K <= T <= 300 K. Supported by ONR and NSF.

BiFeO3 epitaxial thin films and devices: past, present and future

Science.gov (United States)

Sando, D.; Barthélémy, A.; Bibes, M.

2014-11-01

The celebrated renaissance of the multiferroics family over the past ten years has also been that of its most paradigmatic member, bismuth ferrite (BiFeO3). Known since the 1960s to be a high temperature antiferromagnet and since the 1970s to be ferroelectric, BiFeO3 only had its bulk ferroic properties clarified in the mid-2000s. It is however the fabrication of BiFeO3 thin films and their integration into epitaxial oxide heterostructures that have fully revealed its extraordinarily broad palette of functionalities. Here we review the first decade of research on BiFeO3 films, restricting ourselves to epitaxial structures. We discuss how thickness and epitaxial strain influence not only the unit cell parameters, but also the crystal structure, illustrated for instance by the discovery of the so-called T-like phase of BiFeO3. We then present its ferroelectric and piezoelectric properties and their evolution near morphotropic phase boundaries. Magnetic properties and their modification by thickness and strain effects, as well as optical parameters, are covered. Finally, we highlight various types of devices based on BiFeO3 in electronics, spintronics, and optics, and provide perspectives for the development of further multifunctional devices for information technology and energy harvesting.

Photocatalytic activity of galvanically synthesized nanostructure SnO{sub 2} thin films

Energy Technology Data Exchange (ETDEWEB)

Jana, Sumanta, E-mail: sumantajana85@gmail.com [Department of Chemistry, Bengal Engineering and Science University, Botanic Garden, Howrah 711103, WB (India); Mitra, Bibhas Chandra [Department of Physics, Bengal Engineering and Science University, Botanic Garden, Howrah 711103, WB (India); Bera, Pulakesh [Department of Chemistry, Panskura Banamali College, Purba Medinipur, Panskura 721152, WB (India); Sikdar, Moushumi [Department of Chemistry, Bengal Engineering and Science University, Botanic Garden, Howrah 711103, WB (India); Mondal, Anup, E-mail: anupmondal2000@yahoo.co.in [Department of Chemistry, Bengal Engineering and Science University, Botanic Garden, Howrah 711103, WB (India)

2014-07-25

Graphical abstract: Nanostructured porous tin dioxide (SnO{sub 2}) thin films have been synthesized by simple and cost effective galvanic technique. The synthesized porous SnO{sub 2} thin films show excellent photocatalytic activity for degrading methyl orange (MO) dye under light irradiation. The porous morphological grain growth due to annealing is likely to play an active role for this degradation. - Highlights: • SnO{sub 2} thin films have been successfully synthesized by galvanic technique. • A drastic morphological change occurs after annealing as deposited SnO{sub 2} thin films. • Morphological advantage results enhanced photodegradation of dye. - Abstract: The study demonstrates an approach to synthesize nanostructure SnO{sub 2} thin films on TCO (transparent conducting oxide) coated glass substrates by galvanic technique. Aqueous solution of hydrated stannic chloride (SnCl{sub 4}⋅5H{sub 2}O) in potassium nitrate (KNO{sub 3}) solution was used as the working solution. The process involves no sophisticated reactor or toxic chemicals, and proceeds continuously under ambient condition; it provides an economic way of synthesizing nanostructure SnO{sub 2} semiconductor thin films. The influence of sintering temperature on crystalline structure, morphology, electrical and dielectric properties has been studied. A detail analysis of I−V, C−V and dielectrics for annealed SnO{sub 2} thin films have been carried out. The morphological advantage i.e. nanoporous flake like structure allows more efficient transport of reactant molecules to the active interfaces and results a strong photocatalytic activity for degrading methyl orange (MO) dye.

Preparation of 2D square-like Bi2S3-BiOCl heterostructures with enhanced visible light-driven photocatalytic performance for dye pollutant degradation

Directory of Open Access Journals (Sweden)

Jing-jing Xu

2017-10-01

Full Text Available A series of Bi2S3-BiOCl composites with two-dimensional (2D square-like structures were prepared via a two-step anion exchange route. X-ray diffraction (XRD, scanning electron microscopy (SEM, transmission electron microscopy (TEM, and diffuse reflectance spectra (DRS were used to investigate the properties of the as-prepared Bi2S3-BiOCl heterostructures. The coupling of BiOCl and Bi2S3 induced enhanced photoabsorption efficiency and bandgap narrowing. A reactive brilliant red X-3B dye was used as a contaminant to test the photocatalytic activity of the obtained Bi2S3-BiOCl samples under visible light irradiation. The sample Bi2S3-BiOCl with a mass ratio of 8:4 exhibited the highest photodegradation efficiency, which was six times higher than that of pure BiOCl. In addition, a mechanism for the enhancement of photocatalytic activity is proposed.

Thickness oscillations of the transport properties in n-type Bi{sub 2}Te{sub 3} topological insulator thin films

Energy Technology Data Exchange (ETDEWEB)

Rogacheva, E.I., E-mail: rogacheva@kpi.kharkov.ua [National Technical University “Kharkov Polytechnic Institute”, 21 Frunze Street, Kharkov 61002 (Ukraine); Budnik, A.V.; Sipatov, A.Yu.; Nashchekina, O.N. [National Technical University “Kharkov Polytechnic Institute”, 21 Frunze Street, Kharkov 61002 (Ukraine); Fedorov, A.G. [Institute for Single Crystals of NAS of Ukraine, 60 Lenin Prospect, Kharkov 61001 (Ukraine); Dresselhaus, M.S.; Tang, S. [Department of Electrical Engineering and Computer Science and Department of Physics, Massachusetts Institute of Technology, 77 Massachusetts Ave., Cambridge, MA 02139 (United States)

2015-11-02

The dependences of the electrical conductivity, Seebeck coefficient and Hall coefficient on the thickness (d = 20–155 nm) of the n-type thin films grown on the glass substrates by the thermal evaporation in vacuum of the n-type Bi{sub 2}Te{sub 3} topological insulator crystals have been measured. It has been established that these dependences have an oscillatory character with a substantial amplitude. The obtained results are interpreted in terms of quantum size effects, taking into account the peculiar properties of the surface layers of the Bi{sub 2}Te{sub 3} films connected with the topological insulator nature of the bismuth telluride. - Highlights: • The thickness dependences of Bi{sub 2}Te{sub 3} thin films kinetic coefficients were obtained. • The dependences have oscillatory character with a substantial undamped amplitude. • The oscillation period increases with decreasing film thickness. • The oscillations are attributed to electron confinement in the film growth direction. • It is suggested that topological surface layer affects quantum processes in films.

Hierarchical nanostructures assembled from ultrathin Bi2WO6 nanoflakes and their visible-light induced photocatalytic property

International Nuclear Information System (INIS)

Wang, Xiong; Tian, Peng; Lin, Ying; Li, Li

2015-01-01

Graphical abstract: Hierarchical Bi 2 WO 6 nanostructures assembled from nanoflakes were successfully synthesized by a facile hydrothermal method. The excellent photocatalytic activity and recycling performance might be mainly ascribed to the unique hierarchical nanostructures and are expected to offer the nanostructures promising applications in the field of wastewater treatment. - Highlights: • Hierarchical Bi 2 WO 6 nanostructures assembled from nanoflakes were successfully synthesized by a facile hydrothermal method. • Visible-light-induced photocatalytic efficiency of the obtained nanoarchitectures was enhanced about 6 times. • A possible mechanism was proposed. - Abstract: With the aid of ethylene glycol and sodium dodecylbenzene sulfonate, the hierarchical Bi 2 WO 6 nanoarchitectures assembled from nanoflakes could be attained by a facile solvothermal method. The synthetic strategy is versatile and environmentally friendly and a plausible growth-assembly process was proposed for the formation of the hierarchical nanostructures. The visible-light-irradiated photocatalytic activity was estimated by the degradation of rhodamine B. Compared with the sample prepared by a solid-state reaction, the visible-light-induced photocatalytic efficiency of the nanostructures was enhanced about 6 times. The photocatalysis tests show that the nanostructures exhibit excellent photocatalytic activity and recycling performance, which were mainly ascribed to the unique hierarchical nanostructures and are expected to offer promising applications in the field of wastewater treatment

Shielded high-T{sub c} (Bi, Pb){sub 2}Sr{sub 2}Ca{sub 2}Cu{sub 3}O{sub y} (Bi-2223) superconducting tapes

Energy Technology Data Exchange (ETDEWEB)

Lelovic, M.; Eror, N.G. [Department of Materials Science, University of Pittsburgh, Pittsburgh, PA (United States); Balachandran, U.; Prorok, B. [Energy Technology Division, Argonne National Laboratory, Argonne, IL (United States); Selvamanickam, V.; Haldar, P. [Intermagnetics General Corporations, Latham, NY (United States); Talvacchio, J.; Young, R. [Science and Technology Center, Northrop Grumman, Pittsburgh, PA (United States)

1998-11-01

A new composite tape was fabricated in which the primary function of the central Ag-sheathed (Bi, Pb){sub 2}Sr{sub 2}Ca{sub 2}Cu{sub 3}O{sub y} (Bi-2223) filaments was to conduct transport current. A YBa{sub 2}Cu{sub 3}O{sub 7-{delta}} (Y-123) thin film was deposited on the top of the Ag-sheathed Bi-2223 tape to shield the applied magnetic field and to protect the central Bi-2223 filaments. The critical current densities of the Y-123-coated, Ag-sheathed Bi-2223 tapes were better than those of an uncoated tape. However, the Y-123 thin film exhibited T{sub c} approx.= 72 K and a broad transition region that shifted the effect to lower temperatures. Furthermore, pole figure measurements showed widely spread a,b planes along the rolling direction, indicating high-angle grain boundaries that diminished the magnitude of the effect. Microstructural observations showed platelike grains of Y-123 with fine growth ledges in the thin film that was heat treated, in contrast with the microstructure of an as-coated thin film that showed large twinned grains. From the processing point of view, the results showed that heat treating Y-123 thin film according to the Bi-2223 tape schedule was compatible with and beneficial for Y-123. These preliminary results may provide a basis for further improvements in processing of long-length Bi-2223 tapes for high-field applications. (author)

Topotactic synthesis of a new BiS2-based superconductor Bi2(O,F)S2

OpenAIRE

Okada, Tomoyuki; Ogino, Hiraku; Shimoyama, Jun-ichi; Kishio, Kohji

2015-01-01

A new BiS2-based superconductor Bi2(O,F)S2 was discovered. This is a layered compound consisting of alternate stacking structure of rock-salt-type BiS2 superconducting layer and fluorite-type Bi(O,F) blocking layer. Bi2(O,F)S2 was obtained as the main phase by topotactic fluorination of undoped Bi2OS2 using XeF2, which is the first topotactic synthesis of an electron-doped superconductor via reductive fluorination. With increasing F-content, a- and c-axis length increased and decreased, respe...

Synthesis of TiO2/Bi2S3 heterojunction with a nuclear-shell structure and its high photocatalytic activity

International Nuclear Information System (INIS)

Lu, Juan; Han, Qiaofeng; Wang, Zuoshan

2012-01-01

Highlights: ► Bi 2 S 3 was doped into TiO 2 and it was clearly proved by the expander of the crystalline lattice in XRD result. ► As-prepared TiO 2 /Bi 2 S 3 heterojunctions have a nuclear-shell structure which has not been reported. ► As-prepared TiO 2 /Bi 2 S 3 heterojunctions have the excellent photocatalytic activity. -- Abstract: TiO 2 /Bi 2 S 3 heterojunctions with a nuclear-shell structure were prepared by the coprecipitation method. The products were characterized by X-ray diffraction analysis, Raman spectra, transmission electron microscope images and energy dispersion X-ray spectra. Results showed that as-prepared Bi 2 S 3 was urchin-like, made from many nanorods, and TiO 2 /Bi 2 S 3 heterojunctions have a similar nuclear-shell structure, with Bi 2 S 3 as the shell and TiO 2 as the nuclear. The photocatalytic experiments performed under UV irradiation using methyl orange as the pollutant revealed that the photocatalytic activity of TiO 2 could be improved by introduction of an appropriate amount of Bi 2 S 3 . However, excessive amount of Bi 2 S 3 would result in the decrease of photocatalytic activity of TiO 2 . The relative mechanism was proposed.

Optoelectronic and thermoelectric properties in Ga doped {beta}- PbS{sub 2} nanostructured thin films

Energy Technology Data Exchange (ETDEWEB)

Geethu, R.; Jacob, Rajani [Thin Film Research Lab, U.C. College, Aluva, Cochin, Kerala (India); Shripathi, T.; Okram, G.S.; Ganesan, V.; Tripathi, Shilpa; Fatima, Anees [UGC-DAE CSR, Khandwa Road, Indore-452 001, Madhya Pradesh (India); Sreenivasan, P.V. [Department of Chemistry, U.C. College, Aluva, Cochin, Kerala (India); Urmila, K.S.; Pradeep, B. [Solid State Physics Laboratory, Cochin University of Science and Technology, Cochin, Kerala (India); Philip, Rachel Reena, E-mail: reenatara@rediffmail.com [Thin Film Research Lab, U.C. College, Aluva, Cochin, Kerala (India)

2012-06-15

Lead sulphide nanostructured thin films were grown on soda lime glass substrates by chemical bath deposition. The films were then doped with gallium using vacuum evaporation technique. X-ray diffraction (XRD) established the structural type of the host films to be tetragonal {beta}-PbS{sub 2} with average grain size of the order of 15 nm. The nanostructure of films was further confirmed from scanning electron and atomic force micrographs. The shift in the binding energies of the 4f and 4d states of lead, 2p state of sulphur and the 2p states of Ga from their elemental binding energy values, determined from X-ray photoelectron spectroscopy (XPS), indicated intact chemical bonding in the compound. Compositional analysis showed about 0.01% doping of Ga into PbS{sub 2}. Low temperature thermopower measurements indicated p-type conductivity for the films with Fermi level positioned at about 0.017 eV above the maxima of valence band. Optical absorption studies in conjunction with photo sensitivity measurements established its pertinence in junction formation in photovoltaic applications due to the blue shift in the band gap to 2.37 eV and the increased photoconductivity of the films.

Facile fabrication of Bi{sub 2}S{sub 3}/SnS{sub 2} heterojunction photocatalysts with efficient photocatalytic activity under visible light

Energy Technology Data Exchange (ETDEWEB)

Gao, Xiaomin; Huang, Guanbo [Department of Chemistry, School of Science, Tianjin University, Tianjin 300072 (China); Gao, Haihuan [Tianjin Fourth Middle School, Tianjin 300021 (China); Pan, Cheng; Wang, Huan [Department of Chemistry, School of Science, Tianjin University, Tianjin 300072 (China); Yan, Jing, E-mail: yanjingls2012@163.com [Department of Chemistry, School of Science, Tianjin University, Tianjin 300072 (China); Collaborative Innovation Center of Chemical Science and Engineering, Tianjin 300072 (China); Liu, Yu [Department of Chemistry, School of Science, Tianjin University, Tianjin 300072 (China); Qiu, Haixia [Department of Chemistry, School of Science, Tianjin University, Tianjin 300072 (China); Collaborative Innovation Center of Chemical Science and Engineering, Tianjin 300072 (China); Ma, Ning [Department of Chemistry, School of Science, Tianjin University, Tianjin 300072 (China); Gao, Jianping [Department of Chemistry, School of Science, Tianjin University, Tianjin 300072 (China); Collaborative Innovation Center of Chemical Science and Engineering, Tianjin 300072 (China)

2016-07-25

In this work, Bi{sub 2}S{sub 3}/SnS{sub 2} heterojunction photocatalysts were prepared by combining a hydrothermal technique and a facile in situ growth method. The nanocomposites were characterized by X-ray diffraction, scanning electron microscopy, transmission electron microscopy, inductively coupled plasma spectroscopy, X-ray photoelectron spectroscopy, UV–Vis diffusion reflectance spectroscopy and room-temperature photoluminescence spectra. Their photocatalytic performances were evaluated by degrading methyl orange (MO) in aqueous solution (50 mg/L) under visible light (λ > 420 nm) irradiation. It was found that when the mass percentage of Bi{sub 2}S{sub 3} in Bi{sub 2}S{sub 3}/SnS{sub 2} was 7.95 wt%, the as-prepared Bi{sub 2}S{sub 3}/SnS{sub 2} nanocomposite showed the best photocatalytic activity for the degradation of MO. The highly improved performance of the Bi{sub 2}S{sub 3}/SnS{sub 2} nanocomposite was mainly ascribed to the efficient charge separation. - Highlights: • Facile fabrication of novel Bi{sub 2}S{sub 3}/SnS{sub 2} heterojunction photocatalysts. • High-performance photocatalyst for the degradation of organic pollutants. • Good recyclability of catalyst without photo-corrosion. • The photocatalytic mechanism was proposed.

Photovoltaic effect in transition metal modified polycrystalline BiFeO3 thin films

International Nuclear Information System (INIS)

Puli, Venkata Sreenivas; Chrisey, Douglas B; Pradhan, Dhiren Kumar; Katiyar, Rajesh Kumar; Misra, Pankaj; Scott, J F; Katiyar, Ram S; Coondoo, Indrani; Panwar, Neeraj

2014-01-01

We report photovoltaic (PV) effect in multiferroic Bi 0.9 Sm 0.1 Fe 0.95 Co 0.05 O 3 (BSFCO) thin films. Transition metal modified polycrystalline BiFeO 3 (BFO) thin films have been deposited on Pt/TiO 2 /SiO 2 /Si substrate successfully through pulsed laser deposition (PLD). PV response is observed under illumination both in sandwich and lateral electrode configurations. The open-circuit voltage (V oc ) and the short-circuit current density (J sc ) of the films in sandwich electrode configuration under illumination are measured to be 0.9 V and −0.051 µA cm −2 . Additionally, we report piezoresponse for BSFCO films, which confirms ferroelectric piezoelectric behaviour. (paper)

Bulk contribution to magnetotransport properties of low-defect-density Bi2Te3 topological insulator thin films

Science.gov (United States)

Ngabonziza, P.; Wang, Y.; Brinkman, A.

2018-04-01

An important challenge in the field of topological materials is to carefully disentangle the electronic transport contribution of the topological surface states from that of the bulk. For Bi2Te3 topological insulator samples, bulk single crystals and thin films exposed to air during fabrication processes are known to be bulk conducting, with the chemical potential in the bulk conduction band. For Bi2Te3 thin films grown by molecular beam epitaxy, we combine structural characterization (transmission electron microscopy), chemical surface analysis as function of time (x-ray photoelectron spectroscopy) and magnetotransport analysis to understand the low defect density and record high bulk electron mobility once charge is doped into the bulk by surface degradation. Carrier densities and electronic mobilities extracted from the Hall effect and the quantum oscillations are consistent and reveal a large bulk carrier mobility. Because of the cylindrical shape of the bulk Fermi surface, the angle dependence of the bulk magnetoresistance oscillations is two dimensional in nature.

Topotactic synthesis of a new BiS2-based superconductor Bi2(O,F)S2

Science.gov (United States)

Okada, Tomoyuki; Ogino, Hiraku; Shimoyama, Jun-ichi; Kishio, Kohji

2015-02-01

A new BiS2-based superconductor, Bi2(O,F)S2, was discovered. It is a layered compound consisting of alternately stacked structure of rock-salt-type BiS2 superconducting layers and fluorite-type Bi(O,F) blocking layers. Bi2(O,F)S2 was obtained as the main phase by topotactic fluorination of undoped Bi2OS2 using XeF2. This is the first topotactic synthesis of an electron-doped superconductor via reductive fluorination. With increasing F-content, a- and c-axis lengths increased and decreased, respectively, and Tc increased to 5.1 K.

Nanostructured thin film coatings with different strengthening effects

Directory of Open Access Journals (Sweden)

Panfilov Yury

2017-01-01

Full Text Available A number of articles on strengthening thin film coatings were analyzed and a lot of unusual strengthening effects, such as super high hardness and plasticity simultaneously, ultra low friction coefficient, high wear-resistance, curve rigidity increasing of drills with small diameter, associated with process formation of nanostructured coatings by the different thin film deposition methods were detected. Vacuum coater with RF magnetron sputtering system and ion-beam source and arc evaporator for nanostructured thin film coating manufacture are represented. Diamond Like Carbon and MoS2 thin film coatings, Ti, Al, Nb, Cr, nitride, carbide, and carbo-nitride thin film materials are described as strengthening coatings.

Syntheses, crystal Structures and electronic Structures of new metal chalcoiodides Bi2CuSe3I and Bi6Cu3S10I

International Nuclear Information System (INIS)

Liang, I-Chu; Bilc, Daniel I.; Manoli, Maria; Chang, Wei-Yun; Lin, Wen-Fu; Kyratsi, Theodora; Hsu, Kuei-Fang

2016-01-01

Two new metal chalcoiodides were synthesized by solid-state reactions at 400 °C. Crystal Data: Bi 2 CuSe 3 I, 1, monoclinic, C2/m, a=14.243(2) Å, b=4.1937(7) Å, c=14.647(2) Å, β=116.095(2)°, V=785.7(2) Å 3 , and Z=4; Bi 6 Cu 3 S 10 I, 2, orthorhombic, Pnma, a=17.476(2) Å, b=4.0078(4) Å, c=27.391(2) Å, V=1918.5(3) Å 3 , and Z=4. Compound 1 adopts a three-dimensional structure formed by two alternative layers, which consist of BiSe 5 square pyramids, BiSe 4 I 2 octahedra, CuSe 4 tetrahedra, and CuSe 2 I 2 tetrahedra. Compound 2 possesses a new open framework built up of BiS 5 square pyramides, BiS 6 octahedra, BiS 8 polyhedra, and CuS 4 tetrahedra where I − anions are uniquely trapped within the tunnels. Both electronic structures reveal that bismuth and chalcogenide orbitals dominate the bandgaps. The Cu d and I p states contribute to the top of valence bands, in which the distribution of I orbitals may correspond to the relative bonding interactions in 1 and 2. The optical bandgaps determined by the diffuse reflectance spectra are 0.68 eV and 0.72 eV for 1 and 2, respectively. 1 is a p-type semiconductor with high Seebeck coefficients of 460–575 μV/K in the temperature range of 300–425 K. The electrical conductivity is 0.02 S/cm at 425 K for the undoped sample. The thermal conductivity is 0.22 W/mK at 425 K. - Graphical abstract: The hybridization of chalcogenides and iodides produces two new solids Bi2CuSe3I and Bi6Cu3S10I. The I − anions participate in distinct bonding interactions within the two structures and that is consistent with the analyses of density of states. 1 is a p-type semiconductor with an optical bandgap of 0.68 eV, which possesses high Seebeck coefficient and low lattice thermal conductivity in 300–425 K.

Influence of reaction conditions on formation of ionic liquid-based nanostructured Bi2O3 as an efficient visible-light-driven photocatalyst

Science.gov (United States)

Bagheri, Mozhgan; Heydari, Mojgan; Vaezi, Mohammad Reza

2018-01-01

In this study, nanostructured bismuth oxide was synthesized based on the chemical reaction of bismuth nitrate and NaOH in the ionic liquid 1-butyl-3-methylimidazolium chloride ([C4mim]Cl) under ultrasonic irradiation. The effect of sodium hydroxide with a different molar ratio of NaOH to bismuth in the range of 3-10 was investigated. The results of fourier-transform infrared spectroscopy (FT-IR) and X-ray powder diffraction (XRD) showed that NaOH has a critical role in the formation of pure α-Bi2O3. So, at high concentrations of NaOH (NaOH:Bi ≥ 7.5), the chloride anion from the ionic liquid cannot be entered into the crystalline structure of bismuth oxide, which resulted in the formation of pure bismuth oxide, while at lower concentrations of NaOH (NaOH:Bi ≤ 5), Bi3O4Cl was formed with a layered structure. The XRD results revealed that the synthesized α-Bi2O3 has a monoclinic structure and scanning electron microscopy (SEM) images showed that the sample consists of needle like particles with an average thickness of 50 nm. The ionic liquid has an important role in the prevention of an agglomeration of particles in the Bi2O3 sample. The photocatalytic activity of the synthesized Bi2O3 was investigated to study the degradation of malachite green dye as a model pollutant under visible light. The effects of various parameters such as the pH, concentration of the dye, and the catalyst on the degradation of malachite green were also investigated.

Fermi-level tuning of the Dirac surface state in (Bi1-x Sb x )2Se3 thin films

Science.gov (United States)

Satake, Yosuke; Shiogai, Junichi; Takane, Daichi; Yamada, Keiko; Fujiwara, Kohei; Souma, Seigo; Sato, Takafumi; Takahashi, Takashi; Tsukazaki, Atsushi

2018-02-01

We report on the electronic states and the transport properties of three-dimensional topological insulator (Bi1-x Sb x )2Se3 ternary alloy thin films grown on an isostructural Bi2Se3 buffer layer on InP substrates. By angle-resolved photoemission spectroscopy, we clearly detected Dirac surface states with a large bulk band gap of 0.2-0.3 eV in the (Bi1-x Sb x )2Se3 film with x  =  0.70. In addition, we observed by Hall effect measurements that the dominant charge carrier converts from electron (n-type) to hole (p-type) at around x  =  0.7, indicating that the Fermi level can be controlled across the Dirac point. Indeed, the carrier transport was shown to be governed by Dirac surface state in 0.63  ⩽  x  ⩽  0.75. These features suggest that Fermi-level tunable (Bi1-x Sb x )2Se3-based heterostructures provide a platform for extracting exotic topological phenomena.

Separation of top and bottom surface conduction in Bi2Te3 thin films

International Nuclear Information System (INIS)

Yu Xinxin; He Liang; Lang Murong; Jiang Wanjun; Kou Xufeng; Tang Jianshi; Huang Guan; Wang, Kang L; Xiu Faxian; Liao Zhiming; Zou Jin; Wang Yong; Zhang Peng

2013-01-01

Quantum spin Hall (QSH) systems are insulating in the bulk with gapless edges or surfaces that are topologically protected and immune to nonmagnetic impurities or geometric perturbations. Although the QSH effect has been realized in the HgTe/CdTe system, it has not been accomplished in normal 3D topological insulators. In this work, we demonstrate a separation of two surface conductions (top/bottom) in epitaxially grown Bi 2 Te 3 thin films through gate dependent Shubnikov–de Haas (SdH) oscillations. By sweeping the gate voltage, only the Fermi level of the top surface is tuned while that of the bottom surface remains unchanged due to strong electric field screening effects arising from the high dielectric constant of Bi 2 Te 3 . In addition, the bulk conduction can be modulated from n- to p-type with a varying gate bias. Our results on the surface control hence pave a way for the realization of QSH effect in topological insulators which requires a selective control of spin transports on the top/bottom surfaces. (paper)

Understanding Strain-Induced Phase Transformations in BiFeO3 Thin Films.

Science.gov (United States)

Dixit, Hemant; Beekman, Christianne; Schlepütz, Christian M; Siemons, Wolter; Yang, Yongsoo; Senabulya, Nancy; Clarke, Roy; Chi, Miaofang; Christen, Hans M; Cooper, Valentino R

2015-08-01

Experiments demonstrate that under large epitaxial strain a coexisting striped phase emerges in BiFeO 3 thin films, which comprises a tetragonal-like ( T ') and an intermediate S ' polymorph. It exhibits a relatively large piezoelectric response when switching between the coexisting phase and a uniform T ' phase. This strain-induced phase transformation is investigated through a synergistic combination of first-principles theory and experiments. The results show that the S ' phase is energetically very close to the T ' phase, but is structurally similar to the bulk rhombohedral ( R ) phase. By fully characterizing the intermediate S ' polymorph, it is demonstrated that the flat energy landscape resulting in the absence of an energy barrier between the T ' and S ' phases fosters the above-mentioned reversible phase transformation. This ability to readily transform between the S ' and T ' polymorphs, which have very different octahedral rotation patterns and c / a ratios, is crucial to the enhanced piezoelectricity in strained BiFeO 3 films. Additionally, a blueshift in the band gap when moving from R to S ' to T ' is observed. These results emphasize the importance of strain engineering for tuning electromechanical responses or, creating unique energy harvesting photonic structures, in oxide thin film architectures.

Photoelectrochemical properties of hierarchical ZnO micro-nanostructure sensitized with Sb2S3 nanoparticles

Directory of Open Access Journals (Sweden)

Zhimin GUO

2016-02-01

Full Text Available By using electrochemical deposition method, and assisted with additions of PEG-400 and EDA, well-aligned ZnO nanorods and hierarchical ZnO micro-nanostructure are fabricated directly on indium doped tin oxide coated conducting glass (ITO substrate. The shell-core Sb2S3/ZnO nanorod structure and the shell-core hierarchical Sb2S3/ZnO micro-nanostructure are prepared by chemical bath deposition method. SEM, XRD, UV-Vis and photocurrent test are used to characterize the morphology, nanostructures and their photoelectrochemical properties. The studies show that the photocurrent on the array membranes with shell-core hierarchical Sb2S3/ZnO micro-nanostructure is apparently higher than that with shell-core Sb2S3/ZnO nanorods array.

Photocathodic Protection of 304 Stainless Steel by Bi2S3/TiO2 Nanotube Films Under Visible Light.

Science.gov (United States)

Li, Hong; Wang, Xiutong; Wei, Qinyi; Hou, Baorong

2017-12-01

We report the preparation of TiO 2 nanotubes coupled with a narrow bandgap semiconductor, i.e., Bi 2 S 3 , to improve the photocathodic protection property of TiO 2 for metals under visible light. Bi 2 S 3 /TiO 2 nanotube films were successfully synthesized using the successive ionic layer adsorption and reaction (SILAR) method. The morphology and structure of the composite films were studied by scanning electron microscopy and X-ray diffraction, respectively. UV-visible diffuse reflectance spectra were recorded to analyze the optical absorption property of the composite films. In addition, the influence of Bi 2 S 3 deposition cycles on the photoelectrochemical and photocathodic protection properties of the composite films was also studied. Results revealed that the heterostructure comprised crystalline anatase TiO 2 and orthorhombic Bi 2 S 3 and exhibited a high visible light response. The photocurrent density of Bi 2 S 3 /TiO 2 was significantly higher than that of pure TiO 2 under visible light. The sensitization of Bi 2 S 3 enhanced the separation efficiency of the photogenerated charges and photocathodic protection properties of TiO 2 . The Bi 2 S 3 /TiO 2 nanotubes prepared by SILAR deposition with 20 cycles exhibited the optimal photogenerated cathodic protection performance on the 304 stainless steel under visible light.

Photocathodic Protection of 304 Stainless Steel by Bi2S3/TiO2 Nanotube Films Under Visible Light

Science.gov (United States)

Li, Hong; Wang, Xiutong; Wei, Qinyi; Hou, Baorong

2017-01-01

We report the preparation of TiO2 nanotubes coupled with a narrow bandgap semiconductor, i.e., Bi2S3, to improve the photocathodic protection property of TiO2 for metals under visible light. Bi2S3/TiO2 nanotube films were successfully synthesized using the successive ionic layer adsorption and reaction (SILAR) method. The morphology and structure of the composite films were studied by scanning electron microscopy and X-ray diffraction, respectively. UV-visible diffuse reflectance spectra were recorded to analyze the optical absorption property of the composite films. In addition, the influence of Bi2S3 deposition cycles on the photoelectrochemical and photocathodic protection properties of the composite films was also studied. Results revealed that the heterostructure comprised crystalline anatase TiO2 and orthorhombic Bi2S3 and exhibited a high visible light response. The photocurrent density of Bi2S3/TiO2 was significantly higher than that of pure TiO2 under visible light. The sensitization of Bi2S3 enhanced the separation efficiency of the photogenerated charges and photocathodic protection properties of TiO2. The Bi2S3/TiO2 nanotubes prepared by SILAR deposition with 20 cycles exhibited the optimal photogenerated cathodic protection performance on the 304 stainless steel under visible light.

AFM study of growth of Bi2Sr2-xLaxCuO6 thin films

International Nuclear Information System (INIS)

Haitao Yang; Hongjie Tao; Yingzi Zhang; Duogui Yang; Lin Li; Zhongxian Zhao

1997-01-01

c-axis-oriented Bi 2 Sr 1.6 La 0.4 CuO 6 thin films deposited on flat planes of (100)SrTiO 3 , (100)LaAlO 3 and (100)MgO substrates and vicinal planes (off-angle ∼ 6 deg.) of SrTiO 3 substrates by RF magnetron sputtering were studied by atomic force microscopy (AFM). T c of these films reached 29 K. Film thickness ranged from 15 nm to 600 nm. Two typical growth modes have been observed. AFM images of thin films on flat planes of substrates showed a terraced-island growth mode. By contrast, Bi-2201 thin films on vicinal planes of substrates showed a step-flow growth mode. The growth unit is a half-unit-cell in the c-axis for both growth modes. No example of spiral growth, which was thought to be the typical structure of YBCO thin films, was found in either of these kinds of thin films. (author)

Apparent vanishing of ferroelectricity in nanostructured BiScO3PbTiO3

OpenAIRE

Amorín , H; Jiménez , R; Ricote , J; Hungría , T; Castro , A; Algueró , M

2010-01-01

Abstract Nanostructured ceramics of high-temperature piezoelectric 0.375BiScO 3 -0.625PbTiO 3 were prepared by spark plasma sintering of nanocrystalline powders obtained by mechanosynthesis. The macroscopic electrical properties were characterized on dense ceramics with decreasing average grain size down to 28 nm. Results indicate that the electric field is screened by the electrically insulating grain boundaries at the nanoscale, which needs to be considered when discussing size effects i...

Thermoelectric Transport by Surface States in Bi2Se3-Based Topological Insulator Thin Films

International Nuclear Information System (INIS)

Li Long-Long; Xu Wen

2015-01-01

We develop a tractable theoretical model to investigate the thermoelectric (TE) transport properties of surface states in topological insulator thin films (TITFs) of Bi 2 Se 3 at room temperature. The hybridization between top and bottom surface states in the TITF plays a significant role. With the increasing hybridization-induced surface gap, the electrical conductivity and electron thermal conductivity decrease while the Seebeck coefficient increases. This is due to the metal-semiconductor transition induced by the surface-state hybridization. Based on these TE transport coefficients, the TE figure-of-merit ZT is evaluated. It is shown that ZT can be greatly improved by the surface-state hybridization. Our theoretical results are pertinent to the exploration of the TE transport properties of surface states in TITFs and to the potential application of Bi 2 Se 3 -based TITFs as high-performance TE materials and devices. (paper)

Electrode contacts on ferroelectric Pb(Zr x Ti1−x )O3 and SrBi2Ta2O9 thin films and their influence on fatigue properties

OpenAIRE

Lee, J. J.; Thio, C. L.; Desu, Seshu B.

1995-01-01

The degradation (fatigue) of dielectric properties of ferroelectric Pb(ZrxTi1-x)O-3 (PZT) and SrBi2Ta2O9 thin films during cycling was investigated. PZT and SrBi2Ta2O9 thin films were fabricated by metalorganic decomposition and pulsed laser deposition, respectively. Samples with electrodes of platinum (Pt) and ruthenium oxide (RuO2) were studied. The interfacial capacitance (if any) at the Pt/PZT, RuO2/PZT, and Pt/SrBi2Ta2O9 interfaces was determined from the thickness dependence of low-fiel...

Strongly compressed Bi (111) bilayer films on Bi{sub 2}Se{sub 3} studied by scanning tunneling microscopy

Energy Technology Data Exchange (ETDEWEB)

Zhang, K. F.; Yang, Fang; Song, Y. R. [Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), Department of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai 200240 (China); Liu, Canhua; Qian, Dong; Gao, C. L.; Jia, Jin-Feng [Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), Department of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai 200240 (China); Collaborative Innovation Center of Advanced Microstructures, Nanjing 210093 (China)

2015-09-21

Ultra-thin Bi films show exotic electronic structure and novel quantum effects, especially the widely studied Bi (111) film. Using reflection high-energy electron diffraction and scanning tunneling microscopy, we studied the structure and morphology evolution of Bi (111) thin films grown on Bi{sub 2}Se{sub 3}. A strongly compressed, but quickly released in-plane lattice of Bi (111) is found in the first three bilayers. The first bilayer of Bi shows a fractal growth mode with flat surface, while the second and third bilayer show a periodic buckling due to the strong compression of the in-plane lattice. The lattice slowly changes to its bulk value with further deposition of Bi.

Stability of low-carrier-density topological-insulator Bi2Se3 thin films and effect of capping layers

International Nuclear Information System (INIS)

Salehi, Maryam; Brahlek, Matthew; Koirala, Nikesh; Moon, Jisoo; Oh, Seongshik; Wu, Liang; Armitage, N. P.

2015-01-01

Although over the past number of years there have been many advances in the materials aspects of topological insulators (TIs), one of the ongoing challenges with these materials is the protection of them against aging. In particular, the recent development of low-carrier-density bulk-insulating Bi 2 Se 3 thin films and their sensitivity to air demands reliable capping layers to stabilize their electronic properties. Here, we study the stability of the low-carrier-density Bi 2 Se 3 thin films in air with and without various capping layers using DC and THz probes. Without any capping layers, the carrier density increases by ∼150% over a week and by ∼280% over 9 months. In situ-deposited Se and ex situ-deposited poly(methyl methacrylate) suppress the aging effect to ∼27% and ∼88%, respectively, over 9 months. The combination of effective capping layers and low-carrier-density TI films will open up new opportunities in topological insulators

Tuning the electronic properties at the surface of BaBiO{sub 3} thin films

Energy Technology Data Exchange (ETDEWEB)

Ferreyra, C. [GIyA y INN, CNEA, Av.Gral Paz 1499, (1650), San Martín, Buenos Aires (Argentina); Departamento de Física, Facultad Ciencias Exactas y Naturales, Universidad de Buenos Aires (Argentina); Guller, F.; Llois, A. M.; Vildosola, V. [GIyA y INN, CNEA, Av.Gral Paz 1499, (1650), San Martín, Buenos Aires (Argentina); Consejo Nacional de Investigaciones Científicas y Técnicas (CONICET) (Argentina); Marchini, F.; Williams, F. J. [Consejo Nacional de Investigaciones Científicas y Técnicas (CONICET) (Argentina); Departamento de Química Inorgánica, Analítica y Química-Física, INQUIMAE-CONICET, Facultad Ciencias Exactas y Naturales, Universidad de Buenos Aires, Pabellón 2, Ciudad Universitaria, Buenos Aires (Argentina); Lüders, U. [CRISMAT, CNRS UMR 6508, ENSICAEN, 6 Boulevard Maréchal Juin, 14050 Caen Cedex 4 (France); Albornoz, C. [GIyA y INN, CNEA, Av.Gral Paz 1499, (1650), San Martín, Buenos Aires (Argentina); Leyva, A. G. [GIyA y INN, CNEA, Av.Gral Paz 1499, (1650), San Martín, Buenos Aires (Argentina); Escuela de Ciencia y Tecnología, UNSAM, Campus Miguelete, (1650), San Martín, Buenos Aires (Argentina); and others

2016-06-15

The presence of 2D electron gases at surfaces or interfaces in oxide thin films remains a hot topic in condensed matter physics. In particular, BaBiO{sub 3} appears as a very interesting system as it was theoretically proposed that its (001) surface should become metallic if a Bi-termination is achieved (Vildosola et al., PRL 110, 206805 (2013)). Here we report on the preparation by pulsed laser deposition and characterization of BaBiO{sub 3} thin films on silicon. We show that the texture of the films can be tuned by controlling the growth conditions, being possible to stabilize strongly (100)-textured films. We find significant differences on the spectroscopic and transport properties between (100)-textured and non-textured films. We rationalize these experimental results by performing first principles calculations, which indicate the existence of electron doping at the (100) surface. This stabilizes Bi ions in a 3+ state, shortens Bi-O bonds and reduces the electronic band gap, increasing the surface conductivity. Our results emphasize the importance of surface effects on the electronic properties of perovskites, and provide strategies to design novel oxide heterostructures with potential interface-related 2D electron gases.

Solution precursor plasma deposition of nanostructured CdS thin films

International Nuclear Information System (INIS)

Tummala, Raghavender; Guduru, Ramesh K.; Mohanty, Pravansu S.

2012-01-01

Highlights: ► Inexpensive process with capability to produce large scale nanostructured coatings. ► Technique can be employed to spray the coatings on any kind of substrates including polymers. ► The CdS coatings developed have good electrical conductivity and optical properties. ► Coatings possess large amount of particulate boundaries and nanostructured grains. -- Abstract: Cadmium sulfide (CdS) films are used in solar cells, sensors and microelectronics. A variety of techniques, such as vapor based techniques, wet chemical methods and spray pyrolysis are frequently employed to develop adherent CdS films. In the present study, rapid deposition of CdS thin films via plasma spray route using a solution precursor was investigated, for the first time. Solution precursor comprising cadmium chloride, thiourea and distilled water was fed into a DC plasma jet via an axial atomizer to create ultrafine droplets for instantaneous and accelerated thermal decomposition in the plasma plume. The resulting molten/semi-molten ultrafine/nanoparticles of CdS eventually propel toward the substrate to form continuous CdS films. The chemistry of the solution precursor was found to be critical in plasma pyrolysis to control the stoichiometry and composition of the films. X-ray diffraction studies confirmed hexagonal α-CdS structure. Surface morphology and microstructures were investigated to compare with other synthesis techniques in terms of process mechanism and structural features. Transmission electron microscopy studies revealed nanostructures in the atomized particulates. Optical measurements indicated a decreasing transmittance in the visible light with increasing the film thickness and band gap was calculated to be ∼2.5 eV. The electrical resistivity of the films (0.243 ± 0.188 × 10 5 Ω cm) was comparable with the literature values. These nanostructured polycrystalline CdS films could be useful in sensing and solar applications.

Solution precursor plasma deposition of nanostructured CdS thin films

Energy Technology Data Exchange (ETDEWEB)

Tummala, Raghavender [Department of Mechanical Engineering, University of Michigan, Dearborn, MI 48128 (United States); Guduru, Ramesh K., E-mail: rkguduru@umich.edu [Department of Mechanical Engineering, University of Michigan, Dearborn, MI 48128 (United States); Mohanty, Pravansu S. [Department of Mechanical Engineering, University of Michigan, Dearborn, MI 48128 (United States)

2012-03-15

Highlights: Black-Right-Pointing-Pointer Inexpensive process with capability to produce large scale nanostructured coatings. Black-Right-Pointing-Pointer Technique can be employed to spray the coatings on any kind of substrates including polymers. Black-Right-Pointing-Pointer The CdS coatings developed have good electrical conductivity and optical properties. Black-Right-Pointing-Pointer Coatings possess large amount of particulate boundaries and nanostructured grains. -- Abstract: Cadmium sulfide (CdS) films are used in solar cells, sensors and microelectronics. A variety of techniques, such as vapor based techniques, wet chemical methods and spray pyrolysis are frequently employed to develop adherent CdS films. In the present study, rapid deposition of CdS thin films via plasma spray route using a solution precursor was investigated, for the first time. Solution precursor comprising cadmium chloride, thiourea and distilled water was fed into a DC plasma jet via an axial atomizer to create ultrafine droplets for instantaneous and accelerated thermal decomposition in the plasma plume. The resulting molten/semi-molten ultrafine/nanoparticles of CdS eventually propel toward the substrate to form continuous CdS films. The chemistry of the solution precursor was found to be critical in plasma pyrolysis to control the stoichiometry and composition of the films. X-ray diffraction studies confirmed hexagonal {alpha}-CdS structure. Surface morphology and microstructures were investigated to compare with other synthesis techniques in terms of process mechanism and structural features. Transmission electron microscopy studies revealed nanostructures in the atomized particulates. Optical measurements indicated a decreasing transmittance in the visible light with increasing the film thickness and band gap was calculated to be {approx}2.5 eV. The electrical resistivity of the films (0.243 {+-} 0.188 Multiplication-Sign 10{sup 5} {Omega} cm) was comparable with the literature

In situ synthesis of Bi2S3 sensitized WO3 nanoplate arrays with less interfacial defects and enhanced photoelectrochemical performance

Science.gov (United States)

Liu, Canjun; Yang, Yahui; Li, Wenzhang; Li, Jie; Li, Yaomin; Chen, Qiyuan

2016-03-01

In this study, Bi2S3 sensitive layer has been grown on the surface of WO3 nanoplate arrays via an in situ approach. The characterization of samples were carried out using scanning electron microscopy (SEM), transmission electron microscopy (TEM), X-ray diffraction (XRD) and ultraviolet-visible absorption spectroscopy (UV-vis). The results show that the Bi2S3 layer is uniformly formed on the surface of WO3 nanoplates and less interfacial defects were observed in the interface between the Bi2S3 and WO3. More importantly, the Bi2S3/WO3 films as photoanodes for photoelectrochemical (PEC) cells display the enhanced PEC performance compared with the Bi2S3/WO3 films prepared by a sequential ionic layer adsorption reaction (SILAR) method. In order to understand the reason for the enhanced PEC properties, the electron transport properties of the photoelectrodes were studied by using the transient photocurrent spectroscopy and intensity modulated photocurrent spectroscopy (IMPS). The Bi2S3/WO3 films prepared via an in situ approach have a greater transient time constant and higher electron transit rate. This is most likely due to less interfacial defects for the Bi2S3/WO3 films prepared via an in situ approach, resulting in a lower resistance and faster carrier transport in the interface between WO3 and Bi2S3.

Nanoscale Control of Exchange Bias with BiFeO3 Thin Films

NARCIS (Netherlands)

Martin, Lane W.; Chu, Ying-Hao; Holcomb, Mikel B.; Huijben, Mark; Yu, Pu; Han, Shu-Jen; Lee, Donkoun; Wang, Shan X.; Ramesh, R.

2008-01-01

We demonstrate a direct correlation between the domain structure of multiferroic BiFeO3 thin films and exchange bias of Co0.9Fe0.1/BiFeO3 heterostructures. Two distinct types of interactions − an enhancement of the coercive field (exchange enhancement) and an enhancement of the coercive field

Synthesis and photoelectrical performance of nanoscale PbS and Bi2S3 co-sensitized on Ti02 nanotube arrays

Institute of Scientific and Technical Information of China (English)

Fanggong Cai; Min Pan; Yong Feng; Guo Yan; Yong Zhang; Yong Zhao

2017-01-01

TiO2 films have been widely applied in photovoltaic conversion techniques.TiO2 nanotube arrays (TiO2 NAs) can be grown directly on the surface of metal Ti by the anodic oxidation method.Bi2S3 and PbS nanoparticles (NPs) were firstly co-sensitized on TiO2 NAs (denoted as PbS/Bi2S3(n)/TiO2 NAs) by a two-step process containing hydrothermal and sonication-assisted SILAR method.When the concentration of Bi3+ is 5 mmol/L,the best photoelectrical performance was obtained under simulated solar irradiation.The short-circuit photocurrent (Jsc) and photoconversion efficiency (η) of PbS/Bi2S3(5)/TiO2 NAs electrode were 4.70 mA/cm and 1.13 ％,respectively.

Facile synthesis of well-dispersed Bi_2S_3 nanoparticles on reduced graphene oxide and enhanced photocatalytic activity

International Nuclear Information System (INIS)

Chen, Yajie; Tian, Guohui; Mao, Guijie; Li, Rong; Xiao, Yuting; Han, Taoran

2016-01-01

Highlights: • Well-dispersed Bi_2S_3 nanoparticles on reduced graphene oxide were prepared. • Poly(sodium-p-styrenesul-fonate) can maintain Bi_2S_3 small particle size. • The prepared composites inhibit the recombination of photogenerated charges. • The prepared composites exhibited better visible light photoactivity. - Abstract: Here we present a facile method for the synthesis of highly dispersed Bi_2S_3 nanoparticles (Bi_2S_3 NPs) with an average diameter of ca. 25 ± 3 nm on the surface of reduced graphene oxide (RGO) via a poly(sodium-p-styrenesul-fonate) (PSS) asisted hydrothermal process. Such synthetic strategy can avoid excess aggregates of Bi_2S_3 nanoparticles, meanwhile from effective interfacial contact between Bi_2S_3 nanoparticles and RGO nanosheets, and inhibit the recombination of photogenerated charges. The enhanced charge transfer properties were proved by photoluminescence (PL) measurement. The obtained Bi_2S_3 NPs/RGO composites showed more significant visible light photoactivity for the degradation of 2,4-dichlorophenol and Rhodamine B than that pure Bi_2S_3 and the control sample prepared in the absence of PSS. The enhanced photocatalytic performance could be attributed to the synergistic effect of efficient separation of photogenerated electron-hole pairs, increased catalytic active sites and visible light utilization.

Crystal Structure of AgBi2I7 Thin Films.

Science.gov (United States)

Xiao, Zewen; Meng, Weiwei; Mitzi, David B; Yan, Yanfa

2016-10-06

Synthesis of cubic-phase AgBi 2 I 7 iodobismuthate thin films and fabrication of air-stable Pb-free solar cells using the AgBi 2 I 7 absorber have recently been reported. On the basis of X-ray diffraction (XRD) analysis and nominal composition, it was suggested that the synthesized films have a cubic ThZr 2 H 7 crystal structure with AgBi 2 I 7 stoichiometry. Through careful examination of the proposed structure and computational evaluation of the phase stability and bandgap, we find that the reported "AgBi 2 I 7 " films cannot be forming with the ThZr 2 H 7 -type structure, but rather more likely adopt an Ag-deficient AgBiI 4 type. Both the experimental X-ray diffraction pattern and bandgap can be better explained by the AgBiI 4 structure. Additionally, the proposed AgBiI 4 structure, with octahedral bismuth coordination, removes unphysically short Bi-I bonding within the [BiI 8 ] hexahedra of the ThZr 2 I 7 model. Our results provide critical insights for assessing the photovoltaic properties of AgBi 2 I 7 iodobismuthate materials.

Temperature dependence of Ni3S2 nanostructures with high electrochemical performance

Science.gov (United States)

Wang, Y. L.; Wei, X. Q.; Li, M. B.; Hou, P. Y.; Xu, X. J.

2018-04-01

Different Ni3S2 nanostructures have been successfully synthesized at different temperatures by a facile and efficient solvothermal method. The Ni3S2 nanostructures with three-dimensional (3D) nanosheets array and silkworm eggs-like morphologies were obtained by adjusting the reaction temperature. A large number of 3D nanosheets are interconnected to form an open network structure with porous of Ni3S2 at 180 °C, and electrochemical tests showed that the special structure exhibited the outstanding specific capacitance (1357 F g -1 at 1 A g-1) and excellent cycling stability (maintained 91% after 3000 cycles). In comparison, the performance of Ni3S2 silkworm eggs-like structure is not very perfect. This may be due to the fact that the 3D nanosheets with porous structure can improve the electrochemical performance by shortening effectively the diffusion path of electrolyte ions and increasing the active sites during charging and discharging. Among them, the reaction temperature is the main factor to control the formation of the 3D nanosheets array. These results indicated the Ni3S2 nanosheets promising applications as high-performance supercapacitor electrode materials.

Large-scale one-dimensional Bi x O y I z nanostructures: synthesis, characterization, and photocatalytic applications

Science.gov (United States)

Liu, Chaohong; Zhang, Dun

2015-03-01

The performances of Bi x O y I z photofunctional materials are very sensitive to their composition and microstructures; however, the morphology evolution and crystallization process of one-dimensional Bi x O y I z nanostructures, the roles of experimental factors, and related reaction mechanisms remain poorly understood. In this work, large-scale one-dimensional Bi x O y I z nanostructures were fabricated using simple inorganic iodine source. By combing the results of X-ray diffraction and scanning electron microscope, the effect of volume ratios of water and ethanol, concentration of NaOH, and reaction time on the morphologies and crystal phases of Bi x O y I z were elaborated. On the basis of characterizations, a possible process for the growth of Bi5O7I nanobelts was proposed. The optical performances of Bi x O y I z nanostructures were evaluated by ultraviolet-visible-near infrared diffuse reflectance spectra as well as photocatalytic degradation of organic dye and corrosive bacteria. The as-prepared Bi5O7I/Bi2O2CO3/BiOI composite showed excellent photocatalytic activity over malachite green under visible light irradiation, which was deduced closely related to its heterojunction structures.

Properties of Nanostructure Bismuth Telluride Thin Films Using Thermal Evaporation

Directory of Open Access Journals (Sweden)

Swati Arora

2017-01-01

Full Text Available Bismuth telluride has high thermoelectric performance at room temperature; in present work, various nanostructure thin films of bismuth telluride were fabricated on silicon substrates at room temperature using thermal evaporation method. Tellurium (Te and bismuth (Bi were deposited on silicon substrate in different ratio of thickness. These films were annealed at 50°C and 100°C. After heat treatment, the thin films attained the semiconductor nature. Samples were studied by X-ray diffraction (XRD and scanning electron microscopy (SEM to show granular growth.

Role of defects in the carrier-tunable topological-insulator (Bi1 -xSbx )2Te3 thin films

Science.gov (United States)

Scipioni, Kane L.; Wang, Zhenyu; Maximenko, Yulia; Katmis, Ferhat; Steiner, Charlie; Madhavan, Vidya

2018-03-01

Alloys of Bi2Te3 and Sb2Te3[(Bi1-xSbx) 2Te3] have played an essential role in the exploration of topological surface states, allowing us to study phenomena that would otherwise be obscured by bulk contributions to conductivity. Despite intensive transport and angle resolved photoemission (ARPES) studies, important questions about this system remain unanswered. For example, previous studies reported the chemical tuning of the Fermi level to the Dirac point by controlling the Sb:Bi composition ratio, but the optimum ratio varies widely across various studies. Moreover, it is unclear how the quasiparticle lifetime is affected by the disorder resulting from Sb/Bi alloying. In this work, we use scanning tunneling microscopy and spectroscopy to study the electronic structure of epitaxially grown (Bi,Sb) 2Te3 thin films at the nanoscale. We study Landau levels (LLs) to determine the effect of disorder on the quasiparticle lifetime as well as the position of the Dirac point with respect to the Fermi energy. A plot of the LL peak widths shows that despite the intrinsic disorder, the quasiparticle lifetime is not significantly degraded. We further determine that the ideal Sb concentration to place the Fermi energy to within a few meV of the Dirac point is x ˜0.7 , but that postannealing temperatures can have a significant effect on the crystallinity and Fermi level position. Specifically, high postgrowth annealing temperature can result in better crystallinity and surface roughness, but also produces a larger Te defect density which adds n -type carriers. Finally, in combination with quasiparticle interference imaging, the dispersion is revealed over a large energy range above the Fermi energy, in a regime inaccessible to ARPES. Interestingly, the surface state dispersion for the x ˜0.7 sample shows great similarity to pristine Bi2Te3 . This work provides microscopic information on the role of disorder and composition in determining carrier concentration, surface state

Structure and optical properties of thin As{sub 2}S{sub 3}-In{sub 2}S{sub 3} films

Energy Technology Data Exchange (ETDEWEB)

Todorov, R; Pirov, J; Petkov, K [Institute of Optical Materials and Technologies ' Acad. J. Malinowski' , Bulgarian Academy of Sciences, Acad. G. Bonchev Str., bl.109, 1113 Sofia (Bulgaria); Tsankov, D, E-mail: rossen@clf.bas.bg [Institute of Organic Chemistry with Centre of Phytochemistry, Bulgarian Academy of Sciences, Acad. G. Bonchev St. bl.9, 1113 Sofia (Bulgaria)

2011-08-03

This paper deals with the optical properties of thin As{sub 2}S{sub 3}-In{sub 2}S{sub 3} films. The thin layers were deposited by thermal co-evaporation of As{sub 2}S{sub 3} and In{sub 2}S{sub 3}. The composition of the coatings was controlled by x-ray microanalysis; it was found to be close to the expected one. The refractive index n and optical band gap E{sub g}{sup opt} were calculated from the transmittance and reflectance spectra. The results showed that the refractive index of thin As-S films is not affected by the addition of 1 at% indium and it increases from 2.46 to 2.58 for thin film with 13 at% In. A decrease in the changes in the refractive index, {Delta}n, after exposure to light or annealing with addition of indium in arsenic sulfide is observed. To explain the influence of the indium on the photoinduced changes in the optical properties of thin As-S-In films, the glass structure was investigated by infrared spectroscopy. The calculated values of the optical constants were compared with those obtained from ellipsometric measurements.

Properties of SrBi2Nb2O9 thin films on Pt-coated Si

International Nuclear Information System (INIS)

Avila, R.E.; Navarro, P.O.; Martin, V. del C.; Fernandez, L.M.; Sylvester, G.; Retuert, P.J.; Gramsch, E.

2002-01-01

SrBi 2 Nb 2 O 9 powders and thin films, on Pt-coated Si, were synthesised by the sol-gel method. Three-layer thin films appear homogeneous down to the 100 nm scale, polycrystalline in the tetragonal Aurivillius phase, at a average thickness of 40 nm per layer. The index of refraction at the center of the visible range increases with the sintering temperature from roughly 2.1 (at 400 Centigrade) to 2.5 (at 700 Centigrade). The expression n 2 -1 increases linearly with the relative density of the thin films, in similar fashion as previous studies in PbTiO 3 thin films. The dielectric constant in quasistatic and high frequency (1 MHz) modes, is between 160 and 230. (Author)

Temperature behaviour of optical parameters in (Ag3AsS3)0.3(As2S3)0.7 thin films

Science.gov (United States)

Kutsyk, Mykhailo M.; Ráti, Yosyp Y.; Izai, Vitalii Y.; Makauz, Ivan I.; Studenyak, Ihor P.; Kökényesi, Sandor; Komada, Paweł; Zhailaubayev, Yerkin; Smailov, Nurzhigit

2015-12-01

(Ag3AsS3)0.3(As2S3)0.7 thin films were deposited onto a quartz substrate by rapid thermal evaporation. The optical transmission spectra of thin films were measured in the temperature range 77-300 K. It is shown that the absorption edge spectra are described by the Urbach rule. The temperature behaviour of absorption spectra was studied, the temperature dependences of energy position of absorption edge and Urbach energy were investigated. The influence of transition from three-dimensional glass to the two-dimensional thin film as well as influence of Ag3AsS3 introduction into As2S3 on the optical parameters of (Ag3AsS3)0.3(As2S3)0.7 were analysed. The spectral and temperature behaviour or refractive index for (Ag3AsS3)0.3(As2S3)0.7 thin film were studied.

Growth of (100)-highly textured BaBiO{sub 3} thin films on silicon

Energy Technology Data Exchange (ETDEWEB)

Ferreyra, C. [GIyA and INN, CNEA, Av. Gral Paz 1499, 1650 San Martín, Buenos Aires (Argentina); Departamento de Física, Facultad Ciencias Exactas y Naturales, Universidad de Buenos Aires, Pabellón 1, Ciudad Universitaria, Buenos Aires (Argentina); Marchini, F. [Consejo Nacional de Investigaciones Científicas y Técnicas (CONICET) (Argentina); Departamento de Química Inorgánica, Analítica y Química-Física, INQUIMAE-CONICET, Facultad Ciencias Exactas y Naturales, Universidad de Buenos Aires, Pabellón 2, Ciudad Universitaria, Buenos Aires (Argentina); Granell, P. [INTI, CMNB, Av. Gral Paz 5445, B1650KNA San Martín, Buenos Aires (Argentina); Golmar, F. [Consejo Nacional de Investigaciones Científicas y Técnicas (CONICET) (Argentina); INTI, CMNB, Av. Gral Paz 5445, B1650KNA San Martín, Buenos Aires (Argentina); Escuela de Ciencia y Tecnología, UNSAM, Campus Miguelete, 1650 San Martín, Buenos Aires (Argentina); Albornoz, C. [GIyA and INN, CNEA, Av. Gral Paz 1499, 1650 San Martín, Buenos Aires (Argentina); and others

2016-08-01

We report on the growth and characterization of non-epitaxial but (100)-highly textured BaBiO{sub 3} thin films on silicon substrates. We have found the deposition conditions that optimize the texture, and show that the textured growth is favoured by the formation of a BaO layer at the first growth stages. X-ray diffraction Φ-scans, together with the observation that the same textured growth is found on films grown on Pt and SiO{sub 2} buffered Si, demonstrate the absence of epitaxy. Finally, we have shown that our (100)-oriented BaBiO{sub 3} films can be used as suitable buffers for the growth of textured heterostructures on silicon, which could facilitate the integration of potential devices with standard electronics. - Highlights: • BaBiO{sub 3} thin films were grown on Si substrates and characterized. • Films prepared using optimized conditions are highly textured in the (100) direction. • The absence of in-plane texture was demonstrated by X-ray diffraction. • Our films are suitable buffers for the growth of (100)-textured oxide heterostructures.

Electronic structures and stability of Ni/Bi2Te3 and Co/Bi2Te3 interfaces

International Nuclear Information System (INIS)

Xiong Ka; Wang Weichao; Alshareef, Husam N; Gupta, Rahul P; Gnade, Bruce E; Cho, Kyeongjae; White, John B

2010-01-01

We investigate the electronic structures and stability for Ni/Bi 2 Te 3 , NiTe/Bi 2 Te 3 , Co/Bi 2 Te 3 and CoTe 2 /Bi 2 Te 3 interfaces by first-principles calculations. It is found that the surface termination strongly affects the band alignment. Ni and Co are found to form Ohmic contacts to Bi 2 Te 3 . The interface formation energy for Co/Bi 2 Te 3 interfaces is much lower than that of Ni/Bi 2 Te 3 interfaces. Furthermore, we found that NiTe on Bi 2 Te 3 is more stable than Ni, while the formation energies for Co and CoTe 2 on Bi 2 Te 3 are comparable.

Facile synthesis of BiOF/Bi{sub 2}O{sub 3}/reduced graphene oxide photocatalyst with highly efficient and stable natural sunlight photocatalytic performance

Energy Technology Data Exchange (ETDEWEB)

Hu, Limin; Dong, Shuying; Li, Qilu; Feng, Jinglan; Pi, Yunqing; Liu, Menglin [School of Environment, Henan Normal University, Key Laboratory for Yellow River and Huai River Water Environmental and Pollution Control, Ministry of Education, Henan Key Laboratory for Environmental Pollution Control, Xinxiang, Henan 453007 (China); Sun, Jingyu, E-mail: sunjy-cnc@pku.edu.cn [Center for Nanochemistry (CNC), College of Chemistry and Molecular Engineering, Peking University, Beijing 100871 (China); Sun, Jianhui, E-mail: sunjh@htu.cn [School of Environment, Henan Normal University, Key Laboratory for Yellow River and Huai River Water Environmental and Pollution Control, Ministry of Education, Henan Key Laboratory for Environmental Pollution Control, Xinxiang, Henan 453007 (China)

2015-06-05

Highlights: • A dual Bi-based ball-shaped material BiOF/Bi{sub 2}O{sub 3} were facilely synthesized. • The composition effect of BiOF/Bi{sub 2}O{sub 3}/RGO hybrid were probed for the first time. • The photocatalytic performances were evaluated upon natural sunlight irradiation. • The composites showed a twofold augmentation in the degradation efficiency. • The hybrid photocatalyst can be easily recycled for three times. - Abstract: A facile and efficient route for the controllable synthesis of BiOF/Bi{sub 2}O{sub 3} nanostructures by hydrolysis method was reported, where the as-prepared BiOF/Bi{sub 2}O{sub 3} was subsequently incorporated with reduced graphene oxide (RGO) sheets to form BiOF/Bi{sub 2}O{sub 3}/RGO composites. The obtained BiOF/Bi{sub 2}O{sub 3} and BiOF/Bi{sub 2}O{sub 3}/RGO composites were well characterized with the aid of various techniques to probe their crystallographic, morphological, chemical and optical properties. Photocatalytic capacities of the pure BiOF/Bi{sub 2}O{sub 3} and BiOF/Bi{sub 2}O{sub 3}/RGO composites have been investigated by the degradation of Rhodamine B (RhB)-contained wastewater under natural sunlight irradiation. A twofold augmentation of degradation efficiency was in turn observed for BiOF/Bi{sub 2}O{sub 3}/RGO composites compared with that of pure BiOF/Bi{sub 2}O{sub 3} under the natural sunlight irradiation. The optimum conditions, the effects of the active species and stabilities in photocatalytic performances of the BiOF/Bi{sub 2}O{sub 3}/RGO composites have also been probed.

Electronic structures and stability of Ni/Bi2Te3 and Co/Bi2Te3 interfaces

KAUST Repository

Xiong, Ka; Wang, Weichao; Alshareef, Husam N.; Gupta, Rahul P.; White, John B.; Gnade, Bruce E.; Cho, Kyeongjae

2010-01-01

We investigate the electronic structures and stability for Ni/Bi 2Te3, NiTe/Bi2Te3, Co/Bi 2Te3 and CoTe2/Bi2Te3 interfaces by first-principles calculations. It is found that the surface termination strongly affects the band alignment. Ni and Co are found to form Ohmic contacts to Bi2Te3. The interface formation energy for Co/Bi2Te3 interfaces is much lower than that of Ni/Bi2Te3 interfaces. Furthermore, we found that NiTe on Bi2Te3 is more stable than Ni, while the formation energies for Co and CoTe2 on Bi2Te3 are comparable. © 2010 IOP Publishing Ltd.

Electronic structures and stability of Ni/Bi2Te3 and Co/Bi2Te3 interfaces

KAUST Repository

Xiong, Ka

2010-03-04

We investigate the electronic structures and stability for Ni/Bi 2Te3, NiTe/Bi2Te3, Co/Bi 2Te3 and CoTe2/Bi2Te3 interfaces by first-principles calculations. It is found that the surface termination strongly affects the band alignment. Ni and Co are found to form Ohmic contacts to Bi2Te3. The interface formation energy for Co/Bi2Te3 interfaces is much lower than that of Ni/Bi2Te3 interfaces. Furthermore, we found that NiTe on Bi2Te3 is more stable than Ni, while the formation energies for Co and CoTe2 on Bi2Te3 are comparable. © 2010 IOP Publishing Ltd.

Dry etching of ferroelectric Bi4-xEuxTi3O12 (BET) thin films

International Nuclear Information System (INIS)

Lim, Kyu-Tae; Kim, Kyoung-Tae; Kim, Dong-Pyo; Kim, Chang-Il

2004-01-01

Bi 4-x Eu x Ti 3 O 12 (BET) thin films were etched by using a inductively coupled Cl 2 /Ar plasma. We obtained a maximum etch rate of 69 nm/min at a gas mixing ratio of Cl 2 (20 %)/Ar (80 %). This result suggests that an effective method for BET etching is chemically assisted physical etching. With increasing coil RF power, the plasma density increases so that the increased reactive free radicals and ions enhance the etch rates of BET, Pt, and SiO 2 . As the dc-bias voltage is increased, the increased ion energy leads to an increased etch rate of BET films. From X-ray photoelectron spectroscopy, the intensities of the Bi-O, the Eu-O, and the Ti-O peaks change with increasing Cl 2 concentration. For a pure Ar plasma, the peak associated with the oxygen-metal (O-M: TiO 2 , Bi 2 O 3 , Eu 2 O 3 ) bond seems to disappear while the pure oxygen peak does not appear. After the BET thin films is etched by using a Cl 2 /Ar plasma, the peak associated with the O-M bond increases slowly, but more quickly than the peak associated with pure oxygen atoms, due to a decrease in the Ar-ion bombardment. These results seem to indicate that Bi and Eu react little with Cl atoms and are removed predominantly by argon-ion bombardment. Also, Ti reacts little with Cl radicals and is mainly removed by chemically assisted physical etching.

The crystal structure of Kirkiite, Pb10Bi3As3S19

DEFF Research Database (Denmark)

Makovicky, Emil; Balic Zunic, Tonci; Karanovic, Ljiljana

2006-01-01

and chemical analysis resulted in comparable formulae, Pb10Bi2.16As3.84S19 and Pb10.08Bi2.55Sb0.13As2.91S19, respectively, which are close to the ideal formula Pb10Bi3As3S19. The crystal lattice shows a pseudohexagonal symmetry, which is the cause of common twinning in this mineral. The main twin-law has (20...... layers parallel to (083) of kirkiite; the slabs are unit-cell-twinned on (010) refl ection planes. The structure contains one split As position, and two additional sites that could accommodate both As and Bi. The As,Bi distribution over these two sites is determined by the trapezoidal distortion...... of the half-octahedral coordination environment inside the tightly bonded double layers of the PbS-SnS archetype slabs. Owing to the stoichiometry requirements in this structure, Bi must also substitute for 1/11 of the Pb sites. Bond-valence calculations and the volumes of coordination polyhedra show...

Limitations of Cs3Bi2I9 as lead-free photovoltaic absorber materials.

Science.gov (United States)

Ghosh, Biplab; Wu, Bo; Mulmudi, Hemant Kumar; Guet, Claude; Weber, Klaus; Sum, Tze Chien; Mhaisalkar, Subodh G; Mathews, Nripan

2018-01-17

Lead (Pb) halide perovskites have attracted tremendous attention in recent years due to their rich optoelectronic properties, which have resulted in more than 22% power conversion efficient photovoltaics. Nevertheless, Pb-metal toxicity remains a huge hurdle for extensive applications of these compounds. Thus, alternative compounds with similar optoelectronic properties need to be developed. Bismuth possesses similar electronic structure as that of lead with the presence of ns2 electrons that exhibit rich structural variety as well as interesting optical and electronic properties. Herein, we critically assess Cs3Bi2I9 as a candidate for thin-film solar cell absorber. Despite a reasonable optical bandgap (~2eV) and absorption coefficient, the power conversion efficiency of the Cs3Bi2I9 mesoscopic solar cells was found to be severely lacking, limited by poor photocurrent density. The efficiency of the Cs3Bi2I9 solar cell can be slightly improved by changing the stoichiometry of the precursor solutions. We have investigated the possible reasons behind the poor performance of Cs3Bi2I9 by transient absorption and luminescence spectroscopy. Comparison between thin-films and single crystals highlights the presence of intrinsic defects in thin-films which act as nonradiative recombination centers.

Gate-tunable transport characteristics of Bi2S3 nanowire transistors

Science.gov (United States)

Kilcoyne, Colin; Ali, Ahmed H.; Alsaqqa, Ali M.; Rahman, Ajara A.; Whittaker-Brooks, Luisa; Sambandamurthy, Ganapathy

2018-02-01

Electrical transport and resistance noise spectroscopy measurements are performed on individual, single crystalline Bi2S3 nanowires in the field-effect geometry. The nanowires exhibit n-type conduction and device characteristics such as activation energy, ON/OFF ratio, and mobility are calculated over a temperature range of 120-320 K and at several bias values. The noise magnitude is measured between 0.01 and 5 Hz at several gate voltages as the device turns from it's OFF to ON state. The presence of mid-gap states which act as charge traps within the band gap can potentially explain the observed transport characteristics. Sulfur vacancies are the likely origin of these mid-gap states which makes Bi2S3 nanowires appealing for defect engineering as a means to enhance its optoelectronic properties and also to better understand the important role of defects in nanoscale semiconductors.

Colloidal synthesis and characterization of Bi2S3 nanoparticles for photovoltaic applications

International Nuclear Information System (INIS)

Piras, R; Aresti, M; Saba, M; Marongiu, D; Mula, G; Quochi, F; Mura, A; Bongiovanni, G; Cannas, C; Mureddu, M; Ardu, A; Ennas, G; Musinu, A; Calzia, V; Mattoni, A

2014-01-01

Bismuth sulfide is a promising n-type semiconductor for solar energy conversion. We have explored the colloidal synthesis of Bi 2 S 3 nanocrystals, with the aim of employing them in the fabrication of solution-processable solar cells and to replace toxic heavy metals chalcogenides like PbS or CdS, that are currently employed in such devices. We compare different methods to obtain Bi 2 S 3 colloidal quantum dots, including the use of environmentally benign reactants, through organometallic synthesis. Different sizes and shapes were obtained according to the synthesis parameters and the growth process has been rationalized by comparing the predicted morphology with systematic physical-chemistry characterization of nanocrystals by X-ray diffraction, FT-IR spectroscopy, Transmission Electron Microscopy (TEM)

CuInS2 thin films obtained through the annealing of chemically deposited In2S3-CuS thin films

International Nuclear Information System (INIS)

Pena, Y.; Lugo, S.; Calixto-Rodriguez, M.; Vazquez, A.; Gomez, I.; Elizondo, P.

2011-01-01

In this work, we report the formation of CuInS 2 thin films on glass substrates by heating chemically deposited multilayers of copper sulfide (CuS) and indium sulfide (In 2 S 3 ) at 300 and 350 deg. C in nitrogen atmosphere at 10 Torr. CIS thin films were prepared by varying the CuS layer thickness in the multilayers with indium sulfide. The XRD analysis showed that the crystallographic structure of the CuInS 2 (JCPDS 27-0159) is present on the deposited films. From the optical analysis it was estimated the band gap value for the CIS film (1.49 eV). The electrical conductivity varies from 3 x 10 -8 to 3 Ω -1 cm -1 depending on the thickness of the CuS film. CIS films showed p-type conductivity.

Magnetic field induced changes in linear and nonlinear optical properties of Ti incorporated Cr2O3 nanostructured thin film

Science.gov (United States)

Baraskar, Priyanka; Chouhan, Romita; Agrawal, Arpana; Choudhary, R. J.; Sen, Pranay K.; Sen, Pratima

2018-03-01

We report the magnetic field effect on the linear and nonlinear optical properties of pulse laser ablated Ti-incorporated Cr2O3 nanostructured thin film. Optical properties have been experimentally analyzed under Voigt geometry by performing ultraviolet-visible spectroscopy and closed aperture Z-scan technique using a continuous wave He-Ne laser source. Nonlinear optical response reveals a single peak-valley feature in the far field diffraction pattern in absence of magnetic field (B = 0) confirming self-defocussing effect. This feature switches to a valley-peak configuration for B = 5000G, suggesting self-focusing effect. For B ≤ 750G, oscillations were observed revealing the occurrence of higher order nonlinearity. Origin of nonlinearity is attributed to the near resonant d-d transitions observed from the broad peak occurring around 2 eV. These transitions are of magnetic origin and get modified under the application of external magnetic field. Our results suggest that magnetic field can be used as an effective tool to monitor the sign of optical nonlinearity and hence the thermal expansion in Ti-incorporated Cr2O3 nanostructured thin film.

Thickness dependent quantum oscillations of transport properties in topological insulator Bi{sub 2}Te{sub 3} thin films

Energy Technology Data Exchange (ETDEWEB)

Rogacheva, E. I.; Budnik, A. V.; Sipatov, A. Yu.; Nashchekina, O. N. [National Technical University “Kharkov Polytechnic Institute,” 21 Frunze St., Kharkov 61002 (Ukraine); Dresselhaus, M. S. [Department of Electrical Engineering and Computer Science and Department of Physics, Massachusetts Institute of Technology, 77 Massachusetts Ave., Cambridge, Massachusetts 02139 (United States)

2015-02-02

The dependences of the electrical conductivity, the Hall coefficient, and the Seebeck coefficient on the layer thickness d (d = 18−600 nm) of p-type topological insulator Bi{sub 2}Te{sub 3} thin films grown by thermal evaporation in vacuum on glass substrates were obtained at room temperature. In the thickness range of d = 18–100 nm, sustained oscillations with a substantial amplitude were revealed. The observed oscillations are well approximated by a harmonic function with a period Δd = (9.5 ± 0.5) nm. At d > 100 nm, the transport coefficients practically do not change as d is increased. The oscillations of the kinetic properties are attributed to the quantum size effects due to the hole confinement in the Bi{sub 2}Te{sub 3} quantum wells. The results of the theoretical calculations of Δd within the framework of a model of an infinitely deep potential well are in good agreement with the experimental results. It is suggested that the substantial amplitude of the oscillations and their sustained character as a function of d are connected with the topologically protected gapless surface states of Bi{sub 2}Te{sub 3} and are inherent to topological insulators.

Photocatalytic Degradation of Methyl Orange on Bi2O3 and Ag2O-Bi2O3 Nano Photocatalysts

Directory of Open Access Journals (Sweden)

Seyed Ali Hosseini

2017-04-01

Full Text Available The photocatalytic activity of Bi2O3 and Ag2O-Bi2O3 was evaluated by degradation of aqueous methyl orange as a model dye effluent. Bi2O3 was synthesized using chemical precipitation method. Structural analysis revealed that Bi2O3 contain a unique well-crystallized phase and the average crystallite size of 22.4 nm. The SEM analysis showed that the size of Bi2O3 particles was mainly in the range of 16-22 nm. The most important variables affecting the photocatalytic degradation of dyes, namely reaction time, initial pH and catalyst dosage were studied, and their optimal amounts were found at 60 min, 5.58 and 0.025 g, respectively. A good correlation was found between experimental and predicted responses, confirming the reliability of the model. Incorporation of Ag2O in the structure of composite caused decreasing band gap and its response to visible light. Because a high percentage of sunlight is visible light, hence Ag2O-Bi2O3 nano-composite could be used as an efficient visible light driven photocatalyst for degradation of dye effluents by sunlight. Copyright © 2017 BCREC GROUP. All rights reserved Received: 15th August 2016; Revised: 20th December 2016; Accepted: 21st December 2016 How to Cite: Hosseini, S.A., Saeedi, R. (2017. Photocatalytic Degradation of Methyl Orange on Bi2O3 and Ag2O-Bi2O3 Nano Photocatalysts. Bulletin of Chemical Reaction Engineering & Catalysis, 12 (1: 96-105 (doi:10.9767/bcrec.12.1.623.96-105 Permalink/DOI: http://dx.doi.org/10.9767/bcrec.12.1.623.96-105

High absorption coefficients of the CuSb(Se,Te2 and CuBi(S,Se2 alloys enable high-efficient 100 nm thin-film photovoltaics

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Chen Rongzhen

2017-01-01

Full Text Available We demonstrate that the band-gap energies Eg of CuSb(Se,Te2 and CuBi(S,Se2 can be optimized for high energy conversion in very thin photovoltaic devices, and that the alloys then exhibit excellent optical properties, especially for tellurium rich CuSb(Se1−xTex2. This is explained by multi-valley band structure with flat energy dispersions, mainly due to the localized character of the Sb/Bi p-like conduction band states. Still the effective electron mass is reasonable small: mc ≈ 0.25m0 for CuSbTe2. The absorption coefficient α(ω for CuSb(Se1−xTex2 is at ħω = Eg + 1 eV as much as 5–7 times larger than α(ω for traditional thin-film absorber materials. Auger recombination does limit the efficiency if the carrier concentration becomes too high, and this effect needs to be suppressed. However with high absorptivity, the alloys can be utilized for extremely thin inorganic solar cells with the maximum efficiency ηmax ≈ 25% even for film thicknesses d ≈ 50 − 150 nm, and the efficiency increases to ∼30% if the Auger effect is diminished.

High absorption coefficients of the CuSb(Se,Te)2 and CuBi(S,Se)2 alloys enable high-efficient 100 nm thin-film photovoltaics

Science.gov (United States)

Chen, Rongzhen; Persson, Clas

2017-06-01

We demonstrate that the band-gap energies Eg of CuSb(Se,Te)2 and CuBi(S,Se)2 can be optimized for high energy conversion in very thin photovoltaic devices, and that the alloys then exhibit excellent optical properties, especially for tellurium rich CuSb(Se1-xTex)2. This is explained by multi-valley band structure with flat energy dispersions, mainly due to the localized character of the Sb/Bi p-like conduction band states. Still the effective electron mass is reasonable small: mc ≈ 0.25m0 for CuSbTe2. The absorption coefficient α(ω) for CuSb(Se1-xTex)2 is at ħω = Eg + 1 eV as much as 5-7 times larger than α(ω) for traditional thin-film absorber materials. Auger recombination does limit the efficiency if the carrier concentration becomes too high, and this effect needs to be suppressed. However with high absorptivity, the alloys can be utilized for extremely thin inorganic solar cells with the maximum efficiency ηmax ≈ 25% even for film thicknesses d ≈ 50 - 150 nm, and the efficiency increases to ˜30% if the Auger effect is diminished.

Thickness-dependent piezoelectric behaviour and dielectric properties of lanthanum modified BiFeO3 thin films

Directory of Open Access Journals (Sweden)

Glenda Biasotto

2011-03-01

Full Text Available Bi0.85La0.15FeO3 (BLFO thin films were deposited on Pt(111/Ti/SiO2 /Si substrates by the soft chemical method. Films with thicknesses ranging from 140 to 280 nm were grown on platinum coated silicon substrates at 500°C for 2 hours. The X-ray diffraction analysis of BLFO films evidenced a hexagonal structure over the entire thickness range investigated. The grain size of the film changes as the number of the layers increases, indicating thickness dependence. It is found that the piezoelectric response is strongly influenced by the film thickness. It is shown that the properties of BiFeO3 thin films, such as lattice parameter, dielectric permittivity, piezoeletric coefficient etc., are functions of misfit strains.

Physical properties of nanostructured CeO2 thin films grown by SILAR method

Science.gov (United States)

Khan, Ishaque Ahmed; Belkhedkar, M. R.; Salodkar, R. V.; Ubale, A. U.

2018-05-01

Nanostructured CeO2 thin films have been deposited by Successive Ionic Layer Adsorption and Reaction (SILAR) method onto glass substrate using (CeNO3)3 6H2O and NaOH as cationic and anionic precursors respectively. The structural and morphological characterizations were carried out by means of X-ray diffraction, FTIR, FESEM and EDX studies. The highly resistive (1010 Ω cm) semiconducting CeO2 film exhibits 2.95 eV optical band gap.

Manufacturing and investigation of surface morphology and optical properties of composite thin films reinforced by TiO2, Bi2O3 and SiO2 nanoparticles

Science.gov (United States)

Jarka, Paweł; Tański, Tomasz; Matysiak, Wiktor; Krzemiński, Łukasz; Hajduk, Barbara; Bilewicz, Marcin

2017-12-01

The aim of submitted paper is to present influence of manufacturing parameters on optical properties and surface morphology of composite materials with a polymer matrix reinforced by TiO2 and SiO2 and Bi2O3 nanoparticles. The novelty proposed by the authors is the use of TiO2 and SiO2 and Bi2O3 nanoparticles simultaneously in polymeric matrix. This allows using the combined effect of nanoparticles to a result composite material. The thin films of composite material were prepared by using spin-coating method with various spinning rates from solutions of different concentration of nanoparticles. In order to prepare the spinning solution polymer, Poly(methyl methacrylate) (PMMA) was used as a matrix. The reinforcing phase was the mixture of the nanoparticles of SiO2, TiO2 and B2O3. In order to identify the surface morphology of using thin films and arrangement of the reinforcing phase Atomic Force Microscope (AFM) and Scanning Electron Microscope (SEM) were used. In order to study the optical properties of the obtained thin films, the thin films of composites was subjected to an ellipsometry analysis. The measurements of absorbance of the obtained materials, from which the value of the band gap width was specified, were carried out using the UV/VIS spectroscopy. The optical properties of obtain composite thin films depend not only on the individual components used, but also on the morphology and the interfacial characteristics. Controlling the participation of three kinds of nanoparticles of different sizes and optical parameters allows to obtaining the most optimal optical properties of nanocomposites and also controlling the deposition parameters allows to obtaining the most optimal surface morphology of nanocomposites.

Multifunctional BiFeO{sub 3}/TiO{sub 2} nano-heterostructure: Photo-ferroelectricity, rectifying transport, and nonvolatile resistive switching property

Energy Technology Data Exchange (ETDEWEB)

Sarkar, Ayan; Khan, Gobinda Gopal, E-mail: gobinda.gk@gmail.com [Centre for Research in Nanoscience and Nanotechnology, University of Calcutta, Technology Campus, Block JD2, Sector III, Salt Lake City, Kolkata 700 098 (India); Chaudhuri, Arka [Department of Condensed Matter Physics and Material Sciences, S. N. Bose National Centre for Basic Sciences, Block JD, Sector III, Salt Lake City, Kolkata 700 098 (India); Department of Applied Science, Haldia Institute of Technology, Haldia 721657, Purba Medinipur, West Bengal (India); Das, Avishek [Department of Electronic Science, University of Calcutta, 92 APC Road, Kolkata 700009 (India); Mandal, Kalyan [Department of Condensed Matter Physics and Material Sciences, S. N. Bose National Centre for Basic Sciences, Block JD, Sector III, Salt Lake City, Kolkata 700 098 (India)

2016-01-18

Multifunctional BiFeO{sub 3} nanostructure anchored TiO{sub 2} nanotubes are fabricated by coupling wet chemical and electrochemical routes. BiFeO{sub 3}/TiO{sub 2} nano-heterostructure exhibits white-light-induced ferroelectricity at room temperature. Studies reveal that the photogenerated electrons trapped at the domain/grain boundaries tune the ferroelectric polarization in BiFeO{sub 3} nanostructures. The photon controlled saturation and remnant polarization opens up the possibility to design ferroelectric devices based on BiFeO{sub 3.} The nano-heterostructure also exhibits substantial photovoltaic effect and rectifying characteristics. Photovoltaic property is found to be correlated with the ferroelectric polarization. Furthermore, the nonvolatile resistive switching in BiFeO{sub 3}/TiO{sub 2} nano-heterostructure has been studied, which demonstrates that the observed resistive switching is most likely caused by the electric-field-induced carrier injection/migration and trapping/detrapping process at the hetero-interfaces. Therefore, BiFeO{sub 3}/TiO{sub 2} nano-heterostructure coupled with logic, photovoltaics and memory characteristics holds promises for long-term technological applications in nanoelectronics devices.

Ferroelectric properties of bilayer structured Pb(Zr0.52Ti0.48)O3/SrBi2Ta2O9 (PZT/SBT) thin films on Pt/TiO2/SiO2/Si substrates

International Nuclear Information System (INIS)

Zhang Wenqi; Li Aidong; Shao Qiyue; Xia Yidong; Wu Di; Liu Zhiguo; Ming Naiben

2008-01-01

Pb(Zr 0.52 Ti 0.48 )O 3 (PZT) thin films with large remanent polarization and SrBi 2 Ta 2 O 9 (SBT) thin films with excellent fatigue-resisting characteristic have been widely studied for non-volatile random access memories, respectively. To combine these two advantages , bilayered Pb(Zr 0.52 Ti 0.48 )O 3 /SrBi 2 Ta 2 O 9 (PZT/SBT) thin films were fabricated on Pt/TiO 2 /SiO 2 /Si substrates by chemical solution deposition method. X-ray diffraction patterns revealed that the diffraction peaks of PZT/SBT thin films were completely composed of PZT and SBT, and no other secondary phase was observed. The electrical properties of the bilayered structure PZT/SBT films have been investigated in comparison with pure PZT and SBT films. PZT/SBT bilayered thin films showed larger remanent polarization (2P r ) of 18.37 μC/cm 2 than pure SBT and less polarization fatigue up to 1 x 10 9 switching cycles than pure PZT. These results indicated that this bilayered structure of PZT/SBT is a promising material combination for ferroelectric memory applications

Solution-Processed hybrid Sb2 S3 planar heterojunction solar cell

Science.gov (United States)

Huang, Wenxiao; Borazan, Ismail; Carroll, David

Thin-film solar cells based on inorganic absorbers permit a high efficiency and stability. Among or those absorber candidates, recently Sb2S3 has attracted extensive attention because of its suitable band gap (1.5eV ~1.7 eV) , strong optical absorption, low-cost and earth-abundant constituents. Currently high-efficiency Sb2S3 solar cells have absorber layer deposited on nanostructured TiO2 electrodes in combination with organic hole transport material (HTM) on top. However it's challenging to fill the nanostructured TiO2 layer with Sb2S3 and subsequently by HTM, this leads to uncovered surface permits charge recombination. And the existing of Sb2S3/TiO2/HTM triple interface will enhance the recombination due to the surface trap state. Therefore, a planar junction cell would not only have simpler structure with less steps to fabricate but also ideally also have a higher open circuit voltage because of less interface carrier recombination. By far there is limited research focusing on planar Sb2S3 solar cell, so the feasibility is still unclear. Here, we developed a low-toxic solution method to fabricate Sb2S3 thin film solar cell, then we studied the morphology of the Sb2S3 layer and its impact to the device performance. The best device with a structure of FTO/TiO2/Sb2S3/P3HT/Ag has PCE over 5% which is similar or higher than yet the best nanostructure devices with the same HTM. Furthermore, based on solution engineering and surface modification, we improved the Sb2S3 film quality and achieved a record PCE. .

Syntheses, crystal Structures and electronic Structures of new metal chalcoiodides Bi{sub 2}CuSe{sub 3}I and Bi{sub 6}Cu{sub 3}S{sub 10}I

Energy Technology Data Exchange (ETDEWEB)

Liang, I-Chu [Department of Chemistry, and Center for Micro/Nano Science and Technology, National Cheng Kung University, Tainan 701, Taiwan (China); Bilc, Daniel I. [Department of Molecular & Biomolecular Physics, National Institute for Research & Development of Isotopic & Molecular Technologies, Cluj-Napoca 400293 (Romania); Manoli, Maria [Department of Mechanical and Manufacturing Engineering, University of Cyprus, 1678 Nicosia (Cyprus); Chang, Wei-Yun; Lin, Wen-Fu [Department of Chemistry, and Center for Micro/Nano Science and Technology, National Cheng Kung University, Tainan 701, Taiwan (China); Kyratsi, Theodora [Department of Mechanical and Manufacturing Engineering, University of Cyprus, 1678 Nicosia (Cyprus); Hsu, Kuei-Fang [Department of Chemistry, and Center for Micro/Nano Science and Technology, National Cheng Kung University, Tainan 701, Taiwan (China)

2016-02-15

Two new metal chalcoiodides were synthesized by solid-state reactions at 400 °C. Crystal Data: Bi{sub 2}CuSe{sub 3}I, 1, monoclinic, C2/m, a=14.243(2) Å, b=4.1937(7) Å, c=14.647(2) Å, β=116.095(2)°, V=785.7(2) Å{sup 3}, and Z=4; Bi{sub 6}Cu{sub 3}S{sub 10}I, 2, orthorhombic, Pnma, a=17.476(2) Å, b=4.0078(4) Å, c=27.391(2) Å, V=1918.5(3) Å{sup 3}, and Z=4. Compound 1 adopts a three-dimensional structure formed by two alternative layers, which consist of BiSe{sub 5} square pyramids, BiSe{sub 4}I{sub 2} octahedra, CuSe{sub 4} tetrahedra, and CuSe{sub 2}I{sub 2} tetrahedra. Compound 2 possesses a new open framework built up of BiS{sub 5} square pyramides, BiS{sub 6} octahedra, BiS{sub 8} polyhedra, and CuS{sub 4} tetrahedra where I{sup −} anions are uniquely trapped within the tunnels. Both electronic structures reveal that bismuth and chalcogenide orbitals dominate the bandgaps. The Cu d and I p states contribute to the top of valence bands, in which the distribution of I orbitals may correspond to the relative bonding interactions in 1 and 2. The optical bandgaps determined by the diffuse reflectance spectra are 0.68 eV and 0.72 eV for 1 and 2, respectively. 1 is a p-type semiconductor with high Seebeck coefficients of 460–575 μV/K in the temperature range of 300–425 K. The electrical conductivity is 0.02 S/cm at 425 K for the undoped sample. The thermal conductivity is 0.22 W/mK at 425 K. - Graphical abstract: The hybridization of chalcogenides and iodides produces two new solids Bi2CuSe3I and Bi6Cu3S10I. The I{sup −} anions participate in distinct bonding interactions within the two structures and that is consistent with the analyses of density of states. 1 is a p-type semiconductor with an optical bandgap of 0.68 eV, which possesses high Seebeck coefficient and low lattice thermal conductivity in 300–425 K.

Polarization-tuned diode behaviour in multiferroic BiFeO3 thin films

KAUST Repository

Yao, Yingbang; Zhang, Bei; Chen, Long; Yang, Yang; Wang, Zhihong; Alshareef, Husam N.; Zhang, Xixiang

2012-01-01

Asymmetric rectifying I-V behaviour of multiferroic BiFeO3 (BFO) thin films grown on transparent ITO-coated glass was quantitatively studied as a function of ferroelectric polarization. Different polarized states were established by unipolar

Self-assembled micro-/nanostructured WO3 thin films by aqueous chemical growth and their applications in H2 and CO2 sensing

Science.gov (United States)

Sone, B. T.; Nkosi, S. S.; Nkosi, M. M.; Coetsee-Hugo, E.; Swart, H. C.; Maaza, M.

2018-05-01

Application of thin film technology is increasing in many areas such as energy production, energy saving, telecommunications, protective and smart coatings, etc. This increased application creates a need for simple, cost-effective methods for the synthesis of highly multifunctional metal oxide thin films. The technique of Aqueous Chemical Growth is presented in this paper as a simple inexpensive means of producing WO3 thin films that find applications in gas sensing, electrochromism and photocatalysis. We demonstrate, through this technique, that heterogeneous nucleation and growth of WO3 thin films on plain glass substrates takes place at low pHs and low temperatures (75-95 °C) without the use of surfactants and template directing methods. The substrates used needed no surface-modification. On the plain glass substrates (soda lime silicates) a variety of micro-nanostructures could be observed most important of which were nanoplatelets that acted as a basic building block for the self-assembly of more hierarchical 3-d microspheres and thin films. The dominant crystallographic structure observed through X-ray diffraction analysis was found to be hexagonal-WO3 and monoclinic WO3. The thin films produced showed a fair degree of porosity. Some of the thin films on glass showed ability to sense, unaided, H2 at 250 °C. Sensor responses were observed to be 1 - 2 orders of magnitude. The films also demonstrated potential to sense CO2 even though this could only be achieved using high concentrations of CO2 gas at temperatures of 300 °C and above. The sensor responses at 300 °C were estimated to be less than 1 order of magnitude.

Chemically deposited Sb2S3 thin films for optical recording

International Nuclear Information System (INIS)

Shaji, S; Arato, A; Castillo, G Alan; Palma, M I Mendivil; Roy, T K Das; Krishnan, B; O'Brien, J J; Liu, J

2010-01-01

Laser induced changes in the properties of Sb 2 S 3 thin films prepared by chemical bath deposition are described in this paper. Sb 2 S 3 thin films of thickness 550 nm were deposited from a solution containing SbCl 3 and Na 2 S 2 O 3 at 27 0 C for 5 h. These thin films were irradiated by a 532 nm continuous wave laser beam under different conditions at ambient atmosphere. X-ray diffraction analysis showed amorphous to polycrystalline transformation due to laser exposure of these thin films. Morphology and composition of these films were described. Optical properties of these films before and after laser irradiation were analysed. The optical band gap of the material was decreased due to laser induced crystallization. The results obtained confirm that there is further scope for developing this material as an optical recording media.

Mechanical properties of BixSb2−xTe3 nanostructured thermoelectric material

International Nuclear Information System (INIS)

Li, G; Gadelrab, K R; Souier, T; Chiesa, M; Potapov, P L; Chen, G

2012-01-01

Research on thermoelectric (TE) materials has been focused on their transport properties in order to maximize their overall performance. Mechanical properties, which are crucial for system reliability, are often overlooked. The recent development of a new class of high-performance, low-dimension thermoelectric materials calls for a better understanding of their mechanical behavior to achieve the desired system reliability. In the present study we investigate the mechanical behavior of nanostructure bulk TE material p-type Bi x Sb 2−x Te 3 by means of nanoindentation and 3D finite element analysis. The Young’s modulus of the material was estimated by the Oliver–Pharr (OP) method and by means of numerically assisted nanoindentation analysis yielding comparable values about 40 GPa. Enhanced hardness and yield strength can be predicted for this nanostructured material. Microstructure is studied and correlation with mechanical properties is discussed. (paper)

Josephson effectss in bicrystalline Bi2Sr2CaCu2O8+δ thin films

International Nuclear Information System (INIS)

Amrein, T.

1994-08-01

A pulsed laser deposition process is developed for preparing high quality thin films of Bi 2 Sr 2 CaCu 2 O x on different substrates. Both microstructural and electrical properties of the superconducting films are well characterized, e.g. by SEM, TEM and AFM. The high reproducability of the thin film quality facilitated a detailed study of Josephson effects in bicrystalline grain boundary junctions (GBJs). Thin films are deposited on commercially available (001) SrTiO 3 bicrystalls and patterned by standard photolithography using wet-etching or Ar + -ion milling. The width of the micobridges ranges from 2 to 111 μm. The critical current densities across grain boundaries of thin film bicrystals have been measured as a function of the tilt angle Θ. For Θ=0 to 45 , the ratio of the grain boundary critical current density to the bulk critical current density decreases exponentially with increasing tilt angle. Microstructure investigations show a rough grain boundary of the superconductor (roughness 100 nm-1 μm) which is not determined by the roughness of the substrate grain boundary (1-3 nm) but by the island-plus-layer growth of the twin domains. The electrical properties are well described by the resistively shunted junction (RSJ) model. The I c R n -product reaches values of 2.2 mV at 4.2 K and 60 μV at 77 K. An optimized design for dc SQUIDs (Θ=24 ) is developed relating to the results of single GBJs. The values of the transfer function (∂V/∂Φ) run up to 74 μV/Φ o . The equivalent flux noise which is measured in a flux-locked loop mode amounts 4.5 to 25 μPhi o Hz in the white noise region for Φ≥25-50 Hz and 13 to 150 μΦ o Hz at 1 Hz. In conclusion, microstructural as well as electrical properties of bicrystalline Bi 2 Sr 2 CaCu 2 O x and YBa 2 Cu 3 O y GBJs are more or less equal. (orig.)

Graphite-like carbon nitride coupled with tiny Bi2S3 nanoparticles as 2D/0D heterojunction with enhanced photocatalytic activity

Science.gov (United States)

Zhu, Chengzhang; Gong, Tingting; Xian, Qiming; Xie, Jimin

2018-06-01

Novel well-dispersed tiny Bi2S3 nanoparticles (NPs) with an average sizes of approximately 16.2 nm were used to decorate layered g-C3N4 nanosheets (NSs), with the purpose of constructing highly efficient 0D/2D heterojunction photocatalyst by a simple hydrothermal method in one step. The fabricated Bi2S3/g-C3N4 heterostructures exhibited superior visible-light-driven photocatalytic activity toward methyl orange (MO) degradation in contrast to that of individual Bi2S3 and g-C3N4, which could be mainly ascribed to the synergistic effect of the tiny size effect of 0D Bi2S3 NPs and 2D g-C3N4 NSs, the matched energy level positions, and the abundant coupling heterointerfaces between two moieties. More importantly, the photodegradation of methylene blue (MB), rhodamine B (RhB) and colorless tetracycline (TC), ciprofloxacin (CIP) further revealed the broad-spectrum photodegradation capacities of the heterojunction materials. The possible photoinduced charge transfer and pollutant degradation process over Bi2S3/g-C3N4 heterojunctions under visible-light irradiation were proposed. This work may provide a platform for constructing new visible light 0D/2D intimate contact heterostructures with stable and efficient photocatalytic performance.

Synthesis of Bi2O3 architectures in DMF–H2O solution by precipitation method and their photocatalytic activity

International Nuclear Information System (INIS)

Yang, Li-Li; Han, Qiao-Feng; Zhao, Jin; Zhu, Jun-Wu; Wang, Xin; Ma, Wei-Hua

2014-01-01

Graphical abstract: Flowerlike α-Bi 2 O 3 architectures assembled by nanobrick-based petals with pineapple surface were firstly synthesized by precipitation method at room temperature in DMF–H 2 O solution. - Highlights: • Nanobrick-based flowerlike Bi 2 O 3 crystals with pineapple surface were synthesized by precipitation method. • Good solubility of Bi(NO 3 ) 3 in DMF played a crucial role in the growth of flowerlike Bi 2 O 3 . • The growth mechanism of Bi 2 O 3 microcrystallites has been explained in detail. - Abstract: Well-crystalline flowerlike α-Bi 2 O 3 hierarchical architectures with pineapple-shaped petals have been synthesized by precipitation method at a volume ratio of DMF/H 2 O of 5, where DMF and H 2 O were used to dissolve Bi(NO 3 ) 3 and KOH, respectively. If the DMF/H 2 O ratio was decreased to 2:1, 1:1 and 0:30, flower-, bundle- and dendrite-shaped α-Bi 2 O 3 microcrystallites aggregated by nanorods were formed, respectively. The simple synthetic route and thus obtained Bi 2 O 3 architectures of various morphologies provide a basis insight for their formation mechanism. The photocatalytic activity of the as-prepared Bi 2 O 3 particles for degradation of Rhodamine B (RhB) under visible-light irradiation was obviously influenced by their morphologies. Bi 2 O 3 of nanorod-based microstructures exhibited higher photodegradation activity than nanobrick-based ones, owing to higher light absorption and carrier separation efficiency in one-dimensional (1D) nanostructured materials

Influence of piezoelectric strain on the Raman spectra of BiFeO{sub 3} films deposited on PMN-PT substrates

Energy Technology Data Exchange (ETDEWEB)

Himcinschi, Cameliu, E-mail: himcinsc@physik.tu-freiberg.de; Talkenberger, Andreas; Kortus, Jens [TU Bergakademie Freiberg, Institute of Theoretical Physics, 09596 Freiberg (Germany); Guo, Er-Jia [Institute of Physics, Martin-Luther-University Halle-Wittenberg, 06099 Halle (Germany); Institute for Metallic Materials, IFW Dresden, 01069 Dresden (Germany); Quantum Condensed Matter Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37830 (United States); Dörr, Kathrin [Institute of Physics, Martin-Luther-University Halle-Wittenberg, 06099 Halle (Germany); Institute for Metallic Materials, IFW Dresden, 01069 Dresden (Germany)

2016-01-25

BiFeO{sub 3} epitaxial thin films were deposited on piezoelectric 0.72Pb(Mg{sub 1/3}Nb{sub 2/3})O{sub 3}-0.28PbTiO{sub 3} (PMN-PT) substrates with a conductive buffer layer (La{sub 0.7}Sr{sub 0.3}MnO{sub 3} or SrRuO{sub 3}) using pulsed laser deposition. The calibration of the strain values induced by the electric field applied on the piezoelectric PMN-PT substrates was realised using X-Ray diffraction measurements. The method of piezoelectrically induced strain allows one to directly obtain a quantitative correlation between the strain and the shift of the Raman-active phonons. This is a prerequisite for making Raman scattering a strong tool to probe the strain coupling in multiferroic nanostructures. Using the Poisson's number for BiFeO{sub 3}, one can determine the volume change induced by strain, and therefore the Grüneisen parameters for specific phonon modes.

Depth resolved lattice-charge coupling in epitaxial BiFeO3 thin film

Energy Technology Data Exchange (ETDEWEB)

Lee, Hyeon Jun; Lee, Sung Su; Kwak, Jeong Hun; Kim, Young-Min; Jeong, Hu Young; Borisevich, Albina Y.; Lee, Su Yong; Noh, Do Young; Kwon, Owoong; Kim, Yunseok; Jo, Ji Young

2016-12-01

For epitaxial films, a critical thickness (t_c) can create a phenomenological interface between a strained bottom layer and a relaxed top layer. Here, we present an experimental report of how the tc in BiFeO₃ thin films acts as a boundary to determine the crystalline phase, ferroelectricity, and piezoelectricity in 60 nm thick BiFeO₃/SrRuO₃/SrTiO₃ substrate. We found larger Fe cation displacement of the relaxed layer than that of strained layer. In the time-resolved X-ray microdiffraction analyses, the piezoelectric response of the BiFeO₃ film was resolved into a strained layer with an extremely low piezoelectric coefficient of 2.4 pm/V and a relaxed layer with a piezoelectric coefficient of 32 pm/V. The difference in the Fe displacements between the strained and relaxed layers is in good agreement with the differences in the piezoelectric coefficient due to the electromechanical coupling.

A facile solvothermal approach of novel Bi{sub 2}S{sub 3}/TiO{sub 2}/RGO composites with excellent visible light degradation activity for methylene blue

Energy Technology Data Exchange (ETDEWEB)

Liu, Ya; Shi, Yidan [The Laboratory of Food Colloids and Biotechnology, Ministry of Education, School of Chemical and Material Engineering, Jiangnan University, Wuxi 214122 (China); Liu, Xiang, E-mail: liuxiang@jiangnan.edu.cn [The Laboratory of Food Colloids and Biotechnology, Ministry of Education, School of Chemical and Material Engineering, Jiangnan University, Wuxi 214122 (China); Li, Hexing, E-mail: hexing-li@shnu.edu.cn [The Key Laboratory of the Chinese Ministry of Education in Resource Chemistry, Shanghai Normal University, Shanghai 200234 (China)

2017-02-28

Highlights: • Solvothermal approach of novel Bi{sub 2}S{sub 3}/TiO{sub 2}/RGO composites is simple. • Introduction of graphene enhanced the adsorption capacity and conductivity of Bi{sub 2}S{sub 3}/TiO{sub 2}/RGO. • Bi{sub 2}S{sub 3}/TiO{sub 2}/RGO shows high photocatalytic activity under simulated solar light. • Bi{sub 2}S{sub 3}/TiO{sub 2}/RGO exhibits excellent durability and reusability. - Abstract: In this paper, novel photocatalyst Bi{sub 2}S{sub 3}/TiO{sub 2}/RGO composites were successfully fabricated by a facile solvothermal method. During this process, TiO{sub 2} was coupled with Bi{sub 2}S{sub 3} to generate Bi{sub 2}S{sub 3} sensitized TiO{sub 2} nanoparticles, and graphene oxide (GO) was reduced to reduced graphene oxide (RGO), which was uniformly covered with plenty of Bi{sub 2}S{sub 3} and TiO{sub 2}. The as-prepared samples were characterized by scanning electron microscope (SEM), transmission electron microscopy (TEM), specific surface areas (BET), X-ray diffraction (XRD), Fourier transform infrared (FTIR), Raman, X-ray photoelectron spectroscopy (XPS), UV–vis diffuse reflectance spectroscopy (UV–vis DRS) and photoluminescence (PL) spectroscopy. The results confirmed that Bi{sub 2}S{sub 3} could act as an optical filter, which could be activated under visible light. And the introduction of Bi{sub 2}S{sub 3} could improve the response of TiO{sub 2} nanoparticles for visible light. In addition, the Bi{sub 2}S{sub 3}/TiO{sub 2} in Bi{sub 2}S{sub 3}/TiO{sub 2}/RGO composites had more uniform dispersion on the surface of graphene with less agglomeration in comparison with the Bi{sub 2}S{sub 3}/TiO{sub 2}. Graphene can provide conductive electron channels for separation of the electrons and inhibit the recombination of electrons and holes. Furthermore, the photocatalytic activity of Bi{sub 2}S{sub 3}/TiO{sub 2}/RGO composites was evaluated through the degradation of methylene blue (MB) under visible light irradiation. The Bi{sub 2}S{sub 3}/Ti

Chemically deposited In2S3–Ag2S layers to obtain AgInS2 thin films by thermal annealing

International Nuclear Information System (INIS)

Lugo, S.; Peña, Y.; Calixto-Rodriguez, M.; López-Mata, C.; Ramón, M.L.; Gómez, I.; Acosta, A.

2012-01-01

Highlights: ► We obtained polycrystalline silver indium sulfide thin films through the annealing of chemically deposited In 2 S 3 –Ag 2 S films. ► According to XRD chalcopyrite structure of AgInS 2 was obtained. ► AgInS 2 thin film has a band gap of 1.86 eV and a conductivity value of 1.2 × 10 −3 (Ω cm) −1 . - Abstract: AgInS 2 thin films were obtained by the annealing of chemical bath deposited In 2 S 3 –Ag 2 S layers at 400 °C in N 2 for 1 h. According to the XRD and EDX results the chalcopyrite structure of AgInS 2 has been obtained. These films have an optical band gap, E g , of 1.86 eV and an electrical conductivity value of 1.2 × 10 −3 (Ω cm) −1 .

Comparative study on substitution effects in BiFeO{sub 3} thin films fabricated on FTO substrates by chemical solution deposition

Energy Technology Data Exchange (ETDEWEB)

Xue, Xu; Tan, Guoqiang, E-mail: tan3114@163.com; Hao, Hangfei; Ren, Huijun

2013-10-01

Pure BiFeO{sub 3} (BFO), BiFe{sub 0.97}Co{sub 0.03}O{sub 3−δ} (BFCO) and Bi{sub 0.90}Gd{sub 0.10}Fe{sub 0.97}Co{sub 0.03}O{sub 3−δ} (BGFCO) thin films were successfully deposited on FTO substrates by chemical solution deposition technique. The field emission scanning electron microscope reveals that the surface morphology of the BGFCO thin film becomes more compact and uniform than that of the other two films. A slight lattice distortion is created in the BFCO thin film, whereas 10% Gd doping gives rise to tetragonal phase transition and (1 1 0) preferentially oriented film texture for the BGFCO thin film, as evidenced by Raman scattering spectra and X-ray diffraction analyses. X-ray photoelectron spectroscopy analyses clarify that Co-doping results in the increase of oxygen vacancy concentration in the BFCO film, while further introduction of Gd into the BFCO lattice can decrease oxygen vacancy concentration, and the concentrations of Fe{sup 2+} ions in the BFCO and BGFCO thin films are less than that in the BFO counterpart. The BFCO film shows the improved remanent polarization (P{sub r}) of 11.2 μC/cm{sup 2} compared with that of 1.4 μC/cm{sup 2} for the BFO film. The high breakdown strength, low leakage current density in the high electric filed, improved dielectric properties as well as the increased stereochemical activity of Bi ion lone electron pair of the BGFCO thin film all together contribute to the giant P{sub r} of 139.6 μC/cm{sup 2} at room temperature.

Epitaxial Bi2 FeCrO6 Multiferroic Thin Film as a New Visible Light Absorbing Photocathode Material.

Science.gov (United States)

Li, Shun; AlOtaibi, Bandar; Huang, Wei; Mi, Zetian; Serpone, Nick; Nechache, Riad; Rosei, Federico

2015-08-26

Ferroelectric materials have been studied increasingly for solar energy conversion technologies due to the efficient charge separation driven by the polarization induced internal electric field. However, their insufficient conversion efficiency is still a major challenge. Here, a photocathode material of epitaxial double perovskite Bi(2) FeCrO(6) multiferroic thin film is reported with a suitable conduction band position and small bandgap (1.9-2.1 eV), for visible-light-driven reduction of water to hydrogen. Photoelectrochemical measurements show that the highest photocurrent density up to -1.02 mA cm(-2) at a potential of -0.97 V versus reversible hydrogen electrode is obtained in p-type Bi(2) FeCrO(6) thin film photocathode grown on SrTiO(3) substrate under AM 1.5G simulated sunlight. In addition, a twofold enhancement of photocurrent density is obtained after negatively poling the Bi(2) FeCrO(6) thin film, as a result of modulation of the band structure by suitable control of the internal electric field gradient originating from the ferroelectric polarization in the Bi(2) FeCrO(6) films. The findings validate the use of multiferroic Bi(2) FeCrO(6) thin films as photocathode materials, and also prove that the manipulation of internal fields through polarization in ferroelectric materials is a promising strategy for the design of improved photoelectrodes and smart devices for solar energy conversion. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

PLD prepared nanostructured Pt-CeO{sub 2} thin films containing ionic platinum

Energy Technology Data Exchange (ETDEWEB)

Vorokhta, M., E-mail: vorohtam@gmail.com [Charles University in Prague, Faculty of Mathematics and Physics, Department of Surface and Plasma Science, V Holešovičkách 2, 18000 Prague 8 (Czech Republic); Khalakhan, I.; Matolínová, I.; Nováková, J.; Haviar, S. [Charles University in Prague, Faculty of Mathematics and Physics, Department of Surface and Plasma Science, V Holešovičkách 2, 18000 Prague 8 (Czech Republic); Lančok, J.; Novotný, M. [Institute of Physics, Academy of Sciences of the Czech Republic, Na Slovance 2, 182 21 Prague, Czhech Republic (Czech Republic); Yoshikawa, H. [National Institute for Materials Science, Sengen 1-2-1, Tsukuba, Ibaraki 305-0047 (Japan); Matolín, V. [Charles University in Prague, Faculty of Mathematics and Physics, Department of Surface and Plasma Science, V Holešovičkách 2, 18000 Prague 8 (Czech Republic)

2017-02-28

Highlights: • Nanostructured Pt-CeO{sub 2} thin catalyst films were grown on plasma etched and non-etched carbon substrates by pulsed laser deposition. • The surface composition of the nanostructured Pt-CeO{sub 2} films was investigated by surface analysis techniques. • The effect of film roughening was separated from the effect of platinum-ceria atomic interactions. - Abstract: The composition of nanostructured Pt-CeO{sub 2} films on graphite substrates prepared by pulsed laser deposition has been investigated by means of hard X-ray photoelectron spectroscopy, scanning electron microscopy, high resolution transmission electron microscopy, and atomic force microscopy. The influence of morphology of the graphite substrates was investigated with respect to the relative concentrations of ionic and metallic Pt species in the films. It was found that the degree of Pt{sup 2+} enrichment is directly related to the surface morphology of graphite substrates. In particular, the deposition of Pt-CeO{sub 2} films on rough graphite substrate etched in oxygen plasma yielded nanostructured Pt-CeO{sub 2} catalyst films with high surface area and high Pt{sup 2+}/Pt{sup 0} ratio. The presented results demonstrate that PLD is a suitable method for the preparation of thin Pt-CeO{sub 2} catalyst films for fuel cell applications.

Thin-dielectric-layer engineering for 3D nanostructure integration using an innovative planarization approach

International Nuclear Information System (INIS)

Guerfi, Y; Doucet, J B; Larrieu, G

2015-01-01

Three-dimensional (3D) nanostructures are emerging as promising building blocks for a large spectrum of applications. One critical issue in integration regards mastering the thin, flat, and chemically stable insulating layer that must be implemented on the nanostructure network in order to build striking nano-architectures. In this letter, we report an innovative method for nanoscale planarization on 3D nanostructures by using hydrogen silesquioxane as a spin-on-glass (SOG) dielectric material. To decouple the thickness of the final layer from the height of the nanostructure, we propose to embed the nanowire network in the insulator layer by exploiting the planarizing properties of the SOG approach. To achieve the desired dielectric thickness, the structure is chemically etched back with a highly diluted solution to control the etch rate precisely. The roughness of the top surface was less than 2 nm. There were no surface defects and the planarity was excellent, even in the vicinity of the nanowires. This newly developed process was used to realize a multilevel stack architecture with sub-deca-nanometer-range layer thickness. (paper)

Growth and magnetic properties of multiferroic LaxBi1-xMnO3 thin films

Science.gov (United States)

Gajek, M.; Bibes, M.; Wyczisk, F.; Varela, M.; Fontcuberta, J.; Barthélémy, A.

2007-05-01

A comparative study of LaxBi1-xMnO3 thin films grown on SrTiO3 substrates is reported. It is shown that these films grow epitaxially in a narrow pressure-temperature range. A detailed structural and compositional characterization of the films is performed within the growth window. The structure and the magnetization of this system are investigated. We find a clear correlation between the magnetization and the unit-cell volume that we ascribe to Bi deficiency and the resultant introduction of a mixed valence on the Mn ions. On these grounds, we show that the reduced magnetization of LaxBi1-xMnO3 thin films compared to the bulk can be explained quantitatively by a simple model, taking into account the deviation from nominal composition and the Goodenough-Kanamori-Anderson rules of magnetic interactions.

Annealing effect on the bipolar resistive switching behaviors of BiFeO3 thin films on LaNiO3-buffered Si substrates

International Nuclear Information System (INIS)

Chen Xinman; Zhang Hu; Ruan Kaibin; Shi Wangzhou

2012-01-01

Highlights: ► Annealing effect on the bipolar resistive switching behaviors of BiFeO 3 thin films with Pt/BiFeO 3 /LNO was reported. ► Rectification property was explained from the asymmetrical contact between top and bottom interfaces and the distinct oxygen vacancy density. ► The modification of Schottky-like barrier was suggested to be responsible for the resistance switching behaviors of Pt/BiFeO 3 /LNO devices. - Abstract: We reported the annealing effect on the electrical behaviors of BiFeO 3 thin films integrated on LaNiO 3 (LNO) layers buffered Si substrates by sol–gel spin-coating technique. All the BiFeO 3 thin films exhibit the reversible bipolar resistive switching behaviors with Pt/BiFeO 3 /LNO configuration. The electrical conduction mechanism of the devices was dominated by the Ohmic conduction in the low resistance state and trap-controlled space charged limited current in the high resistance state. Good diode-like rectification property was observed in device with BiFeO 3 film annealed at 500 °C, but vanished in device with BiFeO 3 film annealed at 600 °C. This was attributed to the asymmetrical contact between top and bottom interfaces as well as the distinct oxygen vacancy density verified by XPS. Furthermore, the modification of Schottky-like barrier due to the drift of oxygen vacancies was suggested to be responsible for the resistance switching behaviors of Pt/BiFeO 3 /LNO devices.

Imidazoline derivative templated synthesis of broccoli-like Bi2S3 and its electrocatalysis towards the direct electrochemistry of hemoglobin.

Science.gov (United States)

Chen, Xiaoqian; Wang, Qingxiang; Wang, Liheng; Gao, Feng; Wang, Wei; Hu, Zhengshui

2015-04-15

A broccoli-like bismuth sulfide (bBi2S3) was synthesized via a solvothermal method using a self-made imidazoline derivative of 2-undecyl-1-dithioureido-ethyl-imidazoline as the soft template. The morphology and chemical constitution of the product were characterized by scanning electron microscope (SEM), transmission electron microscope (TEM) and X-ray diffraction (XRD). Electrochemical characterization experiments show that the bBi2S3 has the higher specific surface area and standard heterogeneous electron transfer rate constant than the rod-like Bi2S3 (rBi2S3). Hemoglobin (Hb) was then chosen as a protein model to investigate the electrocatalytic property of the synthesized bBi2S3. The results show that Hb entrapped in the composite film of chitosan and bBi2S3 displays an excellent direct electrochemistry, and retains its biocatalytic activity toward the electro-reduction of hydrogen peroxide. The current response in the amperometry shows a linear response to H2O2 concentrations in the range from 0.4 to 4.8µM with high sensitivity (444µAmM(-1)) and low detection limit (0.096µM). The Michaelis-Menten constant (KM(app)) of the fabricated bioelectrode for H2O2 was determined as low as 1µM. These results demonstrate that the synthesized bBi2S3 offers a new path for the immobilization of redox-active protein and the construction of the third-generation biosensors. Copyright © 2014 Elsevier B.V. All rights reserved.

Density functional study of BiSbTeSe{sub 2} topological insulator thin films

Energy Technology Data Exchange (ETDEWEB)

Mohammadpourrad, Zahra; Abolhassani, Mohammadreza [Department of Physics, Science and Research Branch, Islamic Azad University, Tehran (Iran, Islamic Republic of)

2017-08-15

In this work, using density functional theory calculations, we have investigated the band topology of bulk BiSbTeSe{sub 2} and its thin film electronic properties in several thicknesses. It is one member of the quaternary compounds Bi{sub 2-x}Sb{sub x}Te{sub 3-y}Se{sub y} (BSTS) with the best intrinsic bulk insulating behavior. Based on our calculations we have found that a band inversion at Γ-point is induced when spin-orbit coupling is turned on, with an energy gap of about 0.318 eV. The film thickness has an effect on the surface states such that a gap opens at Dirac point in 6 quintuple-layers film and with decrease in thickness, the magnitude of the gap increases. The atomic contributions have been mapped out for the first few layers of thin films to demonstrate the surface states. The relative charge density has been calculated layer-wise and the penetration depth of the surface states into the bulk region is found to be about 2.5-3.5 quintuple layers, depending on the termination species of thin films. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Layer-by-layer deposition of nanostructured CsPbBr3 perovskite thin films

Science.gov (United States)

Reshetnikova, A. A.; Matyushkin, L. B.; Andronov, A. A.; Sokolov, V. S.; Aleksandrova, O. A.; Moshnikov, V. A.

2017-11-01

Layer-by-layer deposition of nanostructured perovskites cesium lead halide thin films is described. The method of deposition is based on alternate immersion of the substrate in the precursor solutions or colloidal solution of nanocrystals and methyl acetate/lead nitrate solution using the device for deposition of films by SILAR and dip-coating techniques. An example of obtaining a photosensitive structure based on nanostructures of ZnO nanowires and layers of CsBbBr3 nanocrystals is also shown.

Structural and optical properties of WO{sub 3} sputtered thin films nanostructured by laser interference lithography

Energy Technology Data Exchange (ETDEWEB)

Castro-Hurtado, I., E-mail: ichurtado@ceit.es [CEIT and Tecnun (University of Navarra), Manuel de Lardizábal 15, 20018 San Sebastián (Spain); Tavera, T.; Yurrita, P.; Pérez, N. [CEIT and Tecnun (University of Navarra), Manuel de Lardizábal 15, 20018 San Sebastián (Spain); Rodriguez, A. [CIC microGUNE Goiru kalea 9, Polo de Innovación Garaia, 20500 Arrasate-Mondragón (Spain); Mandayo, G.G.; Castaño, E. [CEIT and Tecnun (University of Navarra), Manuel de Lardizábal 15, 20018 San Sebastián (Spain)

2013-07-01

A study of the influence of annealing temperature on the structural, morphological and optical properties of WO{sub 3} thin films is presented. The coatings are deposited by RF reactive magnetron sputtering and characterized by XRD analysis and FESEM. The XRD diagrams of the samples show a phase transition from tetragonal to monoclinic when the annealing temperature is raised from 800 to 900 °C. Moreover, the increase of the annealing temperature to 800 °C favors the presence of a granular structure on the surface of the film. A decrease in the optical energy band gap (3.65–3.5 eV and 3.5–3.05 eV for direct and indirect transitions respectively) with annealing temperature has been measured employing Tauc's relation. Furthermore, WO{sub 3} thin films are processed by laser interference lithography (LIL) and periodic nanostructures are obtained. The processed films are characterized by a hexagonal symmetry with a period of 340 nm and the diameter of the nanostructured holes of 150 nm. These films show improved morphological properties of interest in several applications (gas sensors, photonic crystals, etc.) independent of the annealing temperature.

First-principles study on doping and temperature dependence of thermoelectric property of Bi2S3 thermoelectric material

International Nuclear Information System (INIS)

Guo, Donglin; Hu, Chenguo; Zhang, Cuiling

2013-01-01

Graphical abstract: The direction-induced ZT is found. At ZZ direction and n = 1.47 × 10 19 cm −3 , the ZT can reach maximal value, 0.36, which is three times as much as maximal laboratorial value. This result matches well the analysis of electron effective mass. Highlights: ► Electrical transportations of Bi 2 S 3 depend on the concentration and temperature. ► The direction-induced ZT is found. ► At ZZ direction and n = 1.47 × 10 19 cm −3 , the ZT can reach maximal value, 0.36. ► The maximal ZT value is three times as much as maximal laboratorial value. ► By doping and temperature tuning, Bi 2 S 3 is a promising thermoelectric material. - Abstract: The electronic structure and thermoelectric property of Bi 2 S 3 are investigated. The electron and hole effective mass of Bi 2 S 3 is analyzed in detail, from which we find that the thermoelectric transportation varies in different directions in Bi 2 S 3 crystal. Along ac plane the higher figure of merit (ZT) could be achieved. For n-type doped Bi 2 S 3 , the optimal doping concentration is found in the range of (1.0–5.0) × 10 19 cm −3 , in which the maximal ZT reaches 0.21 at 900 K, but along ZZ direction, the maximal ZT reaches 0.36. These findings provide a new understanding of thermoelectricity-dependent structure factors and improving ZT ways. The donor concentration N increases as T increases at one bar of pressure under a suitable chemical potential μ, but above this chemical potential μ, the donor concentration N keeps a constant

Controlling compositional homogeneity and crystalline orientation in Bi0.8Sb0.2 thermoelectric thin films

Science.gov (United States)

Rochford, C.; Medlin, D. L.; Erickson, K. J.; Siegal, M. P.

2015-12-01

Compositional-homogeneity and crystalline-orientation are necessary attributes to achieve high thermoelectric performance in Bi1-xSbx thin films. Following deposition in vacuum, and upon air exposure, we find that 50%-95% of the Sb in 100-nm thick films segregates to form a nanocrystalline Sb2O3 surface layer, leaving the film bulk as Bi-metal. However, we demonstrate that a thin SiN capping layer deposited prior to air exposure prevents Sb-segregation, preserving a uniform film composition. Furthermore, the capping layer enables annealing in forming gas to improve crystalline orientations along the preferred trigonal axis, beneficially reducing electrical resistivity.

Controlling compositional homogeneity and crystalline orientation in Bi0.8Sb0.2 thermoelectric thin films

Directory of Open Access Journals (Sweden)

C. Rochford

2015-12-01

Full Text Available Compositional-homogeneity and crystalline-orientation are necessary attributes to achieve high thermoelectric performance in Bi1−xSbx thin films. Following deposition in vacuum, and upon air exposure, we find that 50%–95% of the Sb in 100-nm thick films segregates to form a nanocrystalline Sb2O3 surface layer, leaving the film bulk as Bi-metal. However, we demonstrate that a thin SiN capping layer deposited prior to air exposure prevents Sb-segregation, preserving a uniform film composition. Furthermore, the capping layer enables annealing in forming gas to improve crystalline orientations along the preferred trigonal axis, beneficially reducing electrical resistivity.

3D Bi2S3/TiO2 cross-linked heterostructure: An efficient strategy to improve charge transport and separation for high photoelectrochemical performance

Science.gov (United States)

Han, Minmin; Jia, Junhong

2016-10-01

A novel 3D cross-linked heterostructure of TiO2 nanorods connecting with each other via ultrathin Bi2S3 nanosheets is constructed by a facile and effective strategy. The growth mechanism has been investigated and proposed based on the evolution of microstructure by changing the reaction parameters. Benefiting from the unique cross-linked heterostructure, the as-prepared Bi2S3 nanosheets modified TiO2 nanorods arrays could achieve a high energy conversion efficiency of 3.29% which is the highest value to date for Bi2S3-only sensitized solar cells as the reported highest value is 2.23% and other reported values are less than 1%. Furthermore, the photoelectrochemical studies clearly reveal that the novel cross-linked heterostructure exhibits much better activity than 0D nanoparticles decorated TiO2 nanorods under visible light irradiation, which may be primarily ascribed to the efficient electron transfer from 2D ultrathin Bi2S3 nanosheets to 1D TiO2 nanorod arrays. The promising results in this work confirm the advantages of cross-linked heterostructure and also undoubtedly offer an attractive synthesis strategy to fabricate other nanorod-based hierarchical architecture as well as nano-devices for solar energy conversion.

Demonstration of surface transport in a hybrid Bi2Se3/Bi2Te3 heterostructure

OpenAIRE

Zhao, Yanfei; Chang, Cui-Zu; Jiang, Ying; DaSilva, Ashley; Sun, Yi; Wang, Huichao; Xing, Ying; Wang, Yong; He, Ke; Ma, Xucun; Xue, Qi-Kun; Wang, Jian

2013-01-01

In spite of much work on topological insulators (TIs), systematic experiments for TI/TI heterostructures remain absent. We grow a high quality heterostructure containing single quintuple layer (QL) of Bi2Se3 on 19 QLs of Bi2Te3 and compare its transport properties with 20 QLs Bi2Se3 and 20 QLs Bi2Te3. All three films are grown on insulating sapphire (0001) substrates by molecular beam epitaxy (MBE). In situ angle-resolved photoemission spectroscopy (ARPES) provides direct evidence that the su...

Investigation of the electronic and magnetic structure of thin layer FeTe on Bi{sub 2}Te{sub 3}

Energy Technology Data Exchange (ETDEWEB)

Cornils, Lasse; Manna, Sujit; Kamlapure, Anand; Haenke, Torben; Wiebe, Jens; Wiesendanger, Roland [Department of Physics, University of Hamburg, Hamburg (Germany); Hu, Jin; Mao, Zhiqiang [Department of Physics, Tulane University, New Orleans (United States); Brummerstedt Iversen, Bo; Hofmann, Philip [Interdisciplinary Nanoscience Center iNANO, Aarhus University (Denmark)

2016-07-01

The surprising discovery of Fe based superconductors in 2008 lead to a big effort in finding new materials with very high critical temperatures. One good example are Fe-chalcogenides. Although the parent compound FeTe is not superconducting, the situation changes drastically on interfacing the material with other substrates. Recently He and coworkers found zero resistance at the interface of Bi{sub 2}Te{sub 3} films grown on bulk FeTe, which showed a transition temperature of 12 K. In this talk we present our latest results on our investigation of the electronic and magnetic nature of epitaxially grown FeTe thin films on the topological insulator Bi{sub 2}Te{sub 3} using spin-polarized scanning tunneling microscopy and spectroscopy. Up to several monolayers of FeTe, an antiferromagnetic structure similar to the one observed on its bulk compound FeTe was clearly visible. Surprisingly we found a gap around the Fermi level indicating proximity to superconductivity in coexistence with magnetism on the nanoscale.

Nanostructured thin films and coatings functional properties

CERN Document Server

Zhang, Sam

2010-01-01

The second volume in ""The Handbook of Nanostructured Thin Films and Coatings"" set, this book focuses on functional properties, including optical, electronic, and electrical properties, as well as related devices and applications. It explores the large-scale fabrication of functional thin films with nanoarchitecture via chemical routes, the fabrication and characterization of SiC nanostructured/nanocomposite films, and low-dimensional nanocomposite fabrication and applications. The book also presents the properties of sol-gel-derived nanostructured thin films as well as silicon nanocrystals e

Enhanced interfacial contact between PbS and TiO2 layers in quantum dot solar cells using 2D-arrayed TiO2 hemisphere nanostructures

Science.gov (United States)

Lee, Wonseok; Ryu, Ilhwan; Lee, Haein; Yim, Sanggyu

2018-02-01

Two-dimensionally (2D) arrayed hemispherical nanostructures of TiO2 thin films were successfully fabricated using a simple procedure of spin-coating or dip-coating TiO2 nanoparticles onto 2D close-packed polystyrene (PS) nanospheres, followed by PS extraction. The nanostructured TiO2 film was then used as an n-type layer in a lead sulfide (PbS) colloidal quantum dot solar cell. The TiO2 nanostructure could provide significantly increased contacts with subsequently deposited PbS quantum dot layer. In addition, the periodically arrayed nanostructure could enhance optical absorption of the cell by redirecting the path of the incident light and increasing the path length passing though the active layer. As a result, the power conversion efficiency (PCE) reached 5.13%, which is approximately a 1.7-fold increase over that of the control cell without nanostructuring, 3.02%. This PCE enhancement can mainly be attributed to the increase of the short-circuit current density from 19.6 mA/cm2 to 30.6 mA/cm2, whereas the open-circuit voltage and fill factor values did not vary significantly.

Nanostructured tungsten trioxide thin films synthesized for photoelectrocatalytic water oxidation: a review.

Science.gov (United States)

Zhu, Tao; Chong, Meng Nan; Chan, Eng Seng

2014-11-01

The recent developments of nanostructured WO3 thin films synthesized through the electrochemical route of electrochemical anodization and cathodic electrodeposition for the application in photoelectrochemical (PEC) water splitting are reviewed. The key fundamental reaction mechanisms of electrochemical anodization and cathodic electrodeposition methods for synthesizing nanostructured WO3 thin films are explained. In addition, the effects of metal oxide precursors, electrode substrates, applied potentials and current densities, and annealing temperatures on size, composition, and thickness of the electrochemically synthesized nanostructured WO3 thin films are elucidated in detail. Finally, a summary is given for the general evaluation practices used to calculate the energy conversion efficiency of nanostructured WO3 thin films and a recommendation is provided to standardize the presentation of research results in the field to allow for easy comparison of reported PEC efficiencies in the near future. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Thickness dependent structural, optical and electrical properties of Se85In12Bi3 nanochalcogenide thin films

Science.gov (United States)

Tripathi, Ravi P.; Zulfequar, M.; Khan, Shamshad A.

2018-04-01

Our aim is to study the thickness dependent effects on structure, electrical and optical properties of Se85In12Bi3 nanochalcogenide thin films. Bulk alloy of Se85In12Bi3 was synthesized by melt-quenching technique. The amorphous as well as glassy nature of Se85In12Bi3 chalcogenide was confirmed by non-isothermal Differential Scanning Calorimetry (DSC) measurements. The nanochalcogenide thin films of thickness 30, 60 and 90 nm were prepared on glass/Si wafer substrate using Physical Vapour Condensation Technique (PVCT). From XRD studies it was found that thin films have amorphous texture. The surface morphology and particle size of films were studied by Field Emission Scanning Electron Microscope (FESEM). From optical studies, different optical parameters were estimated for Se85In12Bi3 thin films at different thickness. It was found that the absorption coefficient (α) and extinction coefficient (k) increases with photon energy and decreases with film thickness. The optical absorption process followed the rule of indirect transitions and optical band gap were found to be increase with film thickness. The value of Urbach energy (Et) and steepness parameter (σ) were also calculated for different film thickness. For electrical studies, dc-conductivity measurement was done at different temperature and activation energy (ΔEc) were determined and found to be increase with film thickness.

Pressure induced phase transition in Pb6Bi2S9

DEFF Research Database (Denmark)

Olsen, Lars Arnskov; Friese, Karen; Makovicky, Emil

2011-01-01

consists of two types of moduli with SnS/TlI archetype structure in which the Pb and Bi lone pairs are strongly expressed. The mechanism of the phase transition is described in detail and the results are compared to the closely related phase transition in Pb3Bi2S6 (lillianite).......The crystal structure of Pb6Bi2S9 is investigated at pressures between 0 and 5.6 GPa with X-ray diffraction on single-crystals. The pressure is applied using diamond anvil cells. Heyrovskyite (Bbmm, a = 13.719(4) Å, b = 31.393(9) Å, c = 4.1319(10) Å, Z = 4) is the stable phase of Pb6Bi2S9...... at ambient conditions and is built from distorted moduli of PbS-archetype structure with a low stereochemical activity of the Pb2+ and Bi3+ lone electron pairs. Heyrovskyite is stable until at least 3.9 GPa and a first-order phase transition occurs between 3.9 and 4.8 GPa. A single-crystal is retained after...

Enhanced photoelectrochemical response of plasmonic Au embedded BiVO4/Fe2O3 heterojunction.

Science.gov (United States)

Verma, Anuradha; Srivastav, Anupam; Khan, Saif A; Rani Satsangi, Vibha; Shrivastav, Rohit; Kumar Avasthi, Devesh; Dass, Sahab

2017-06-14

The effect of embedding Au nanoparticles (NPs) in a BiVO 4 /Fe 2 O 3 heterojunction for photoelectrochemical water splitting is studied here for the first time. The present nanostructured heterojunction offers three major advantages over pristine BiVO 4 and Fe 2 O 3 : (i) the formation of a heterojunction between BiVO 4 and Fe 2 O 3 enhances the charge carrier separation and transfer, (ii) the layer of Fe 2 O 3 provides protection to BiVO 4 from photocorrosion and, (iii) the Au NPs possessing surface plasmon resonance (SPR) enhance the photoelectrochemical response by transferring energy to metal oxides by hot electron transfer (HET) and plasmon resonant energy transfer (PRET). The present study reveals that the heterojunction ITO/BiVO 4 /Fe 2 O 3 (with 32% v/v Au solution in both layers) gives the best performance and mitigates the limitations of both pristine Fe 2 O 3 and BiVO 4 . A thirteen-fold increment in applied bias photon-to-current conversion efficiency (ABPE) was observed at 1.24 V vs. RHE under the condition of 1 Sun illumination. Monochromatic incident photon-to-current conversion efficiency (IPCE) measurements indicated that an Au embedded heterojunction is more effective in harvesting visible light in comparison to a heterojunction without Au NPs.

Structural properties of Bi{sub 2−x}Mn{sub x}Se{sub 3} thin films grown via molecular beam epitaxy

Energy Technology Data Exchange (ETDEWEB)

Babakiray, Sercan; Johnson, Trent A.; Borisov, Pavel; Holcomb, Mikel B.; Lederman, David, E-mail: david.lederman@mail.wvu.edu [Department of Physics and Astronomy, West Virginia University, Morgantown, West Virginia 26506-6315 (United States); Marcus, Matthew A. [Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States); Tarafder, Kartick [Department of Physics, BITS-Pilani Hyderabad Campus, Secunderabad, Andhra Pradesh 500078 (India)

2015-07-28

The effects of Mn doping on the structural properties of the topological insulator Bi{sub 2}Se{sub 3} in thin film form were studied in samples grown via molecular beam epitaxy. Extended x-ray absorption fine structure measurements, supported by density functional theory calculations, indicate that preferential incorporation occurs substitutionally in Bi sites across the entire film volume. This finding is consistent with x-ray diffraction measurements which show that the out of plane lattice constant expands while the in plane lattice constant contracts as the Mn concentration is increased. X-ray photoelectron spectroscopy indicates that the Mn valency is 2+ and that the Mn bonding is similar to that in MnSe. The expansion along the out of plane direction is most likely due to weakening of the Van der Waals interactions between adjacent Se planes. Transport measurements are consistent with this Mn{sup 2+} substitution of Bi sites if additional structural defects induced by this substitution are taken into account.

Properties of SrBi sub 2 Nb sub 2 O sub 9 thin films on Pt-coated Si

CERN Document Server

Avila, R E; Martin, V D C; Fernandez, L M; Sylvester, G S; Retuert, P J; Gramsch, E

2002-01-01

SrBi sub 2 Nb sub 2 O sub 9 powders and thin films, on Pt-coated Si, were synthesised by the sol-gel method. Three-layer thin films appear homogeneous down to the 100 nm scale, polycrystalline in the tetragonal Aurivillius phase, at a average thickness of 40 nm per layer. The index of refraction at the center of the visible range increases with the sintering temperature from roughly 2.1 (at 400 Centigrade) to 2.5 (at 700 Centigrade). The expression n sup 2 -1 increases linearly with the relative density of the thin films, in similar fashion as previous studies in PbTiO sub 3 thin films. The dielectric constant in quasistatic and high frequency (1 MHz) modes, is between 160 and 230. (Author)

CuInS{sub 2} thin films obtained through the annealing of chemically deposited In{sub 2}S{sub 3}-CuS thin films

Energy Technology Data Exchange (ETDEWEB)

Pena, Y., E-mail: yolapm@gmail.com [Facultad de Ciencias Quimicas, Universidad Autonoma de Nuevo Leon, Pedro de Alba S/N, Ciudad Universitaria, 66451, San Nicolas de los Garza, Nuevo Leon (Mexico); Lugo, S. [Facultad de Ciencias Quimicas, Universidad Autonoma de Nuevo Leon, Pedro de Alba S/N, Ciudad Universitaria, 66451, San Nicolas de los Garza, Nuevo Leon (Mexico); Calixto-Rodriguez, M. [Centro de Investigacion en Energia, Universidad Nacional Autonoma de Mexico, Privada Xochicalco S/N, Col Centro, 62580, Temixco, Morelos (Mexico); Vazquez, A.; Gomez, I.; Elizondo, P. [Facultad de Ciencias Quimicas, Universidad Autonoma de Nuevo Leon, Pedro de Alba S/N, Ciudad Universitaria, 66451, San Nicolas de los Garza, Nuevo Leon (Mexico)

2011-01-01

In this work, we report the formation of CuInS{sub 2} thin films on glass substrates by heating chemically deposited multilayers of copper sulfide (CuS) and indium sulfide (In{sub 2}S{sub 3}) at 300 and 350 deg. C in nitrogen atmosphere at 10 Torr. CIS thin films were prepared by varying the CuS layer thickness in the multilayers with indium sulfide. The XRD analysis showed that the crystallographic structure of the CuInS{sub 2} (JCPDS 27-0159) is present on the deposited films. From the optical analysis it was estimated the band gap value for the CIS film (1.49 eV). The electrical conductivity varies from 3 x 10{sup -8} to 3 {Omega}{sup -1} cm{sup -1} depending on the thickness of the CuS film. CIS films showed p-type conductivity.

Surface and interface states of Bi{sub 2}Se{sub 3} thin films investigated by optical second-harmonic generation and terahertz emission

Energy Technology Data Exchange (ETDEWEB)

Hamh, S. Y.; Park, S.-H.; Lee, J. S., E-mail: jsl@gist.ac.kr [Department of Physics and Photon Science, School of Physics and Chemistry, Gwangju Institute of Science and Technology, Gwangju 500-712 (Korea, Republic of); Jerng, S.-K.; Jeon, J. H.; Chun, S. H. [Department of Physics and Graphene Research Institute, Sejong University, Seoul 143-747 (Korea, Republic of); Jeon, J. H.; Kahng, S. J. [Department of Physics, Korea University, Seoul 136-701 (Korea, Republic of); Yu, K.; Choi, E. J. [Department of Physics, University or Seoul, Seoul 130-743 (Korea, Republic of); Kim, S.; Choi, S.-H. [Department of Applied Physics, College of Applied Science, Kyung Hee University, Yongin 446-701 (Korea, Republic of); Bansal, N. [Department of Electrical and Computer Engineering, Rutgers, The state University of New Jersey, Piscataway, New Jersey 08854 (United States); Oh, S. [Department of Physics and Astronomy, Rutgers, The state University of New Jersey, Piscataway, New Jersey 08854 (United States); Park, Joonbum; Kho, Byung-Woo; Kim, Jun Sung [Department of Physics, Pohang University of Science and Technology, Pohang 790-784 (Korea, Republic of)

2016-02-01

We investigate the surface and interface states of Bi{sub 2}Se{sub 3} thin films by using the second-harmonic generation technique. Distinct from the surface of bulk crystals, the film surface and interface show the isotropic azimuth dependence of second-harmonic intensity, which is attributed to the formation of randomly oriented domains on the in-plane. Based on the nonlinear susceptibility deduced from the model fitting, we determine that the surface band bending induced in a space charge region occurs more strongly at the film interface facing the Al{sub 2}O{sub 3} substrate or capping layer compared with the interface facing the air. We demonstrate that distinct behavior of the terahertz electric field emitted from the samples can provide further information about the surface electronic state of Bi{sub 2}Se{sub 3}.

Luminescence and excited state dynamics of Bi{sup 3+} centers in Y{sub 2}O{sub 3}

Energy Technology Data Exchange (ETDEWEB)

Babin, V. [Institute of Physics AS CR, Cukrovarnicka 10, 16200 Prague (Czech Republic); Chernenko, K., E-mail: nuclearphys@yandex.ru [Institute of Physics, University of Tartu, Ravila 14c, 50411 Tartu (Estonia); Peter the Great Saint-Petersburg Polytechnic University, Polytekhnicheskaya 29, 195251 St. Petersburg (Russian Federation); Lipińska, L. [Institute of Electronic Materials Technology, Wólczyńska 133, 01919 Warsaw (Poland); Mihokova, E.; Nikl, M. [Institute of Physics AS CR, Cukrovarnicka 10, 16200 Prague (Czech Republic); Schulman, L.S. [Physics Department, Clarkson University, Potsdam, NY 13699-5820 (United States); Shalapska, T. [Institute of Physics, University of Tartu, Ravila 14c, 50411 Tartu (Estonia); Suchocki, A. [Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw (Poland); Institute of Physics, University of Bydgoszcz, Weyssenhoffa 11, 85072 Bydgoszcz (Poland); Zazubovich, S. [Institute of Physics, University of Tartu, Ravila 14c, 50411 Tartu (Estonia); Zhydachevskii, Ya. [Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw (Poland); Lviv Polytechnic National University, Bandera 12, 79646 Lviv (Ukraine)

2015-11-15

Photoluminescence of Y{sub 2}O{sub 3}:Bi nanopowder synthesized by the modified sol–gel method is studied using time-resolved luminescence spectroscopy in the 4.2–300 K temperature range. Bi{sup 3+} ions are substituted for Y{sup 3+} ions in two different crystal lattice sites, one having S{sub 6} symmetry (Bi(S{sub 6})) and the other C{sub 2} symmetry (Bi(C{sub 2})). The luminescence characteristics of these two centers are found to have strongly different electron–phonon interactions. The luminescence of Bi(S{sub 6}) and Bi(C{sub 2}) centers peak at 3.04 eV and 2.41 eV, respectively, and arise from the radiative decay of the triplet relaxed excited state (RES) of Bi{sup 3+} ions. The model and structure of the RES, responsible for the luminescence of Bi(S{sub 6}) and Bi(C{sub 2}) centers in Y{sub 2}O{sub 3}:Bi, as well as radiative and nonradiative processes, taking place in the excited states of these centers, are investigated. The parameters of the triplet RES (the separation between the metastable and radiative levels and probabilities of radiative and nonradiative transitions from these levels) are determined. Low-temperature quenching of the triplet luminescence of these centers is explained by nonradiative quantum tunneling transitions from the metastable minima of their triplet RES to closely located defect- or exciton-related levels. - Highlights: • Photoluminescence of Bi{sup 3+} centers of two types in Y{sub 2}O{sub 3}:Bi is investigated. • Bi(S{sub 6}) and Bi(C{sub 2}) centers reveal strongly different electron–phonon interaction. • Radiative and nonradiative processes in their triplet excited states are clarified. • Low-temperature luminescence quenching in Bi(S{sub 6}) and Bi(C{sub 2}) centers is studied. • New fast weak ≈2.9 eV emission is suggested to arise from Bi(C{sub 2}) centers.

The off-stoichiometric Bi1.8Pb0.3Sr2Ca2Cu3.3Ox target for thin films

International Nuclear Information System (INIS)

Harabor, A.; Deletter, M.

1996-01-01

X-ray diffraction (XRD), EDAX, AC susceptibility and resistivity measurements has been used as characterization methods for the Bi-2223 monophase target with the starting stoichiometry Bi 1.8 Pb 0.3 Sr 2 Ca 2 Cu 3.3 O x . Pressure parameter is playing an important role in obtaining good superconducting properties for this compound. Critical currents and activation energy has been calculated from susceptibility and magnetoresistivity curves, respectively. The results could be interpreted in terms of TAPS and TAFF models. (orig.)

Characterization of nanostructured Mn3O4 thin films grown by SILAR method at room temperature

International Nuclear Information System (INIS)

Ubale, A.U.; Belkhedkar, M.R.; Sakhare, Y.S.; Singh, Arvind; Gurada, Chetan; Kothari, D.C.

2012-01-01

A novel successive ionic layer adsorption and reaction method has been successfully employed to grow nanostructured conducting nearly transparent thin films of Mn 3 O 4 on to glass substrates at room temperature using MnCl 2 and NaOH as cationic and anionic precursors. The structural and morphological characterizations of the as deposited Mn 3 O 4 films have been carried out by means of X-ray diffraction (XRD), Field Emission Scanning Electron Micrograph (FESEM), EDAX, Atomic Fore Microscopy (AFM) and Fourier Transform Infrared Spectrum (FTIR) analysis. The optical absorption and electrical resistivity measurements were carried out to investigate optical band gap and activation energy of Mn 3 O 4 films deposited by SILAR method. The optical band gap and activation energy of the as deposited film is found to be 2.70 and 0.14 eV respectively. The thermo-emf measurements of Mn 3 O 4 thin film confirm its p-type semiconducting nature. Highlights: ► Nanostructured Mn 3 O 4 thin film is prepared by SILAR method at room temperature. ► The film is nanocrystalline with orthorhombic structure of Mn 3 O 4 . ► The XRD, FTIR, FESEM, EDX and AFM characterization confirms nanocrystalline nature. ► Optical band gap, electrical resistivity and activation energy of film is reported. ► A thermo-emf measurement confirms p-type conductivity of Mn 3 O 4 films.

Capture of atmospheric CO2 into (BiO)2CO3/graphene or graphene oxide nanocomposites with enhanced photocatalytic performance

International Nuclear Information System (INIS)

Zhang, Wendong; Dong, Fan; Zhang, Wei

2015-01-01

Graphical abstract: Self-assembly of (BiO) 2 CO 3 nanoflakes on graphene and graphene oxide nanosheets were realized by a one-pot efficient capture of atmospheric CO 2 at room temperature. - Highlights: • A facile one-step method was developed for graphene-based composites. • The synthesis was conducted by utilization of atmospheric CO 2 . • (BiO) 2 CO 3 -graphene and (BiO) 2 CO 3 -graphene oxide composites were synthesized. • The nanocomposites exhibited enhanced photocatalytic activity. - Abstract: Self-assembly of (BiO) 2 CO 3 nanoflakes on graphene (Ge) and graphene oxide (GO) nanosheets, as an effective strategy to improve the photocatalytic performance of two-dimensional (2D) nanostructured materials, were realized by a one-pot efficient capture of atmospheric CO 2 at room temperature. The as-synthesized samples were characterized by XRD, SEM, TEM, XPS, UV–vis DRS, Time-resolved ns-level PL and BET-BJH measurement. The photocatalytic activity of the obtained samples was evaluated by the removal of NO at the indoor air level under simulated solar-light irradiation. Compared with pure (BiO) 2 CO 3 , (BiO) 2 CO 3 /Ge and (BiO) 2 CO 3 /GO nanocomposites exhibited enhanced photocatalytic activity due to their large surface areas and pore volume, and efficient charge separation and transfer. The present work could provide a simple method to construct 2D nanocomposites by efficient utilization of CO 2 in green synthetic strategy.

Magneto-optical Kerr effect in Cr-doped (Bi,Sb)2Te3 Thin Films

Science.gov (United States)

Pan, Yu; Yao, Bing; Richardella, Anthony; Kandala, Abhinav; Fraleigh, Robert; Lee, Joon Sue; Samarth, Nitin; Yeats, Andrew; Awschalom, David D.

2014-03-01

When a three-dimensional (3D) topological insulator (TI) is interfaced with magnetism, the breaking of time reversal symmetry results in new phenomena such as the recently observed quantum anomalous Hall effect [C.-Z. Zhang et al., Science340, 167 (2013)]. Thus motivated, we use the polar-mode magneto-optical Kerr effect (MOKE) to probe the temperature- and field-dependent magnetization in molecular beam epitaxy grown Cr-doped thin films of the 3D TI (Bi,Sb)2Te3. Square MOKE hysteresis loops observed at low temperatures indicate robust ferromagnetism with a perpendicular magnetic anisotropy and Curie temperature that varies from ~ 5 K to ~ 150 K, depending on sample details. A key question is the nature of the ferromagnetism: is it a carrier-mediated mechanism, Van Vleck mechanism or due to extrinsic clusters? We address this issue by varying the magnetic ion concentration and carrier density via sample composition as well as by varying the chemical potential by back gating. Finally, we use spatially-resolved MOKE to image the magnetization in these samples. Supported by ONR and DARPA.

Phonons of single quintuple Bi 2 Te 3 and Bi 2 Se 3 films and bulk materials

KAUST Repository

Cheng, Wei; Ren, Shang-Fen

2011-01-01

Phonons of single quintuple films of Bi2Te3 and Bi2Se3 and corresponding bulk materials are calculated in detail by MedeA (a trademark of Materials Design) and Vienna ab initio simulation package (VASP). The calculated results with and without spin-orbit couplings are compared, and the important roles that the spin-orbit coupling plays in these materials are discussed. A symmetry breaking caused by the anharmonic potentials around Bi atoms in the single quintuple films is identified and discussed. The observed Raman intensity features in Bi 2Te3 and Bi2Se3 quintuple films are explained. © 2011 American Physical Society.

Phonons of single quintuple Bi 2 Te 3 and Bi 2 Se 3 films and bulk materials

KAUST Repository

Cheng, Wei

2011-03-10

Phonons of single quintuple films of Bi2Te3 and Bi2Se3 and corresponding bulk materials are calculated in detail by MedeA (a trademark of Materials Design) and Vienna ab initio simulation package (VASP). The calculated results with and without spin-orbit couplings are compared, and the important roles that the spin-orbit coupling plays in these materials are discussed. A symmetry breaking caused by the anharmonic potentials around Bi atoms in the single quintuple films is identified and discussed. The observed Raman intensity features in Bi 2Te3 and Bi2Se3 quintuple films are explained. © 2011 American Physical Society.

Facile large scale synthesis of Bi{sub 2}S{sub 3} nano rods–graphene composite for photocatalytic photoelectrochemical and supercapacitor application

Energy Technology Data Exchange (ETDEWEB)

Vadivel, S. [Electrochemical Engineering Laboratory, Department of Chemical Engineering, C. Tech Campus, Anna University, Chennai-600 025 (India); Naveen, A. Nirmalesh [Department of Physics, Anna University, Chennai, Tamil Nadu 600025 (India); Kamalakannan, V.P. [Electrochemical Engineering Laboratory, Department of Chemical Engineering, C. Tech Campus, Anna University, Chennai-600 025 (India); Cao, P. [Department of Chemistry and Materials Engineering, The University of Auckland, PB 92019, Auckland 1142 (New Zealand); Balasubramanian, N., E-mail: nbsbala@annauniv.edu [Electrochemical Engineering Laboratory, Department of Chemical Engineering, C. Tech Campus, Anna University, Chennai-600 025 (India)

2015-10-01

Graphical abstract: - Highlights: • A Bi{sub 2}S{sub 3}/RGO composite was synthesized by one pot precipitation method. • The synthesized Bi{sub 2}S{sub 3}/RGO composite exhibit rod like morphology. • As synthesized composite was applied for malachite green degradation. • The synthesized Bi{sub 2}S{sub 3}/RGO composite exhibits a specific capacitance of 290 F g{sup −1} at a scan rate of 1 A g{sup −1}. • Photocatalytic and supercapacitor properties of Bi{sub 2}S{sub 3} were enhanced mainly due to effective graphene incorporation. - Abstract: Bi{sub 2}S{sub 3} nano rods–graphene (BG) composite material was synthesized by a simple one step precipitation method. The crystallanity, structural and morphological properties were studied by the X-ray diffraction (XRD), field-emission scanning electron microscopy (FESEM), high resolution transmission electron microscopy (HRTEM), X-ray photoelectron spectroscopy (XPS) and Raman spectroscopy techniques. The photocatalytic activity of BG was evaluated by the photocatalytic degradation of malachite green dye (MG) aqueous solution under the visible light irradiation. The effect of graphene content on the photoelectrochemical property of Bi{sub 2}S{sub 3} nano rods was also studied. The enhancement of photocurrent and photocatalytic properties of BG composite attributed to the synergistic effect between the Bi{sub 2}S{sub 3} nano rods and graphene sheets which improves the charge separation efficiency in Bi{sub 2}S{sub 3} nano rods. The supercapacitor behavior was studied using cyclic voltametry and galvanostatic charge discharge studies. The BG composite exhibits a maximum specific capacitance of 290 F g{sup −1} at a current density of 1 A g{sup −1}. The present study may provide as a new approach in improving the performance of BG composite in supercapacitor, solar cells and photocatalytic applications.

Fabrication of nanostructured Al-doped ZnO thin film for methane sensing applications

Energy Technology Data Exchange (ETDEWEB)

Shafura, A. K., E-mail: shafura@ymail.com; Azhar, N. E. I.; Uzer, M.; Mamat, M. H. [NANO-ElecTronic Centre (NET), Faculty of Electrical Engineering, Universiti Teknologi MARA, 40450 Shah Alam, Selangor (Malaysia); Sin, N. D. Md. [NANO-ElecTronic Centre (NET), Faculty of Electrical Engineering, Universiti Teknologi MARA, 40450 Shah Alam, Selangor (Malaysia); Faculty of Electrical Engineering, Universiti Teknologi MARA Cawangan Johor, Kampus Pasir Gudang, 81750 Masai, Johor (Malaysia); Saurdi, I. [NANO-ElecTronic Centre (NET), Faculty of Electrical Engineering, Universiti Teknologi MARA, 40450 Shah Alam, Selangor (Malaysia); Faculty of Electrical Engineering, Universiti Teknologi MARA Sarawak, Kampus Kota Samarahan Jalan Meranek, Sarawak (Malaysia); Shuhaimi, A. [Dimensional Materials Research Centre (LDMRC), Department of Physics, Faculty of Science, University ofMalaya, 50603 Kuala Lumpur (Malaysia); Alrokayan, Salman A. H.; Khan, Haseeb A. [Research Chair of Targeting and Treatment Cancer Using Nanoparticles, Department Of Biochemistry, College Of Science, King Saud University, P.O: 2454 Riyadh 11451 (Saudi Arabia); Rusop, M., E-mail: nanouitm@gmail.com [NANO-ElecTronic Centre (NET), Faculty of Electrical Engineering, Universiti Teknologi MARA, 40450 Shah Alam, Selangor (Malaysia); NANO-SciTech Centre (NST), Institute of Science, Universiti Teknologi MARA, 40450 Shah Alam, Selangor (Malaysia)

2016-07-06

CH{sub 4} gas sensor was fabricated using spin-coating method of the nanostructured ZnO thin film. Effect of annealing temperature on the electrical and structural properties of the film was investigated. Dense nanostructured ZnO film are obtained at higher annealing temperature. The optimal condition of annealing temperature is 500°C which has conductivity and sensitivity value of 3.3 × 10{sup −3} S/cm and 11.5%, respectively.

Effect of Silver Doping on Transport Properties of Bi2Se3: AgxBi2Se3 and Bi2-xAgxSe3

Science.gov (United States)

Zhang, Min; Wei, Zhan-Tao

2018-03-01

Ag-doped Bi2Se3 with the formula AgxBi2Se3 and Bi2-xAgxSe3 were prepared and their electrical and magnetic transport properties have been investigated to study the influence of silver doping on transport properties of Bi2Se3 with different Ag-doped method. All samples exhibited metallic resistivity and the resistivity increased with increasing Ag concentration. The lattice parameter c of Ag-substituted and Ag-intercalated samples displays a contrary change as the Ag concentration increased. For the Ag-intercalated samples, both the resistance upturn were observed in the curves of temperature dependent of resistivity and temperature dependent of magnetoresistance, respectively, indicating that the enhanced surface effect was obtained in those samples. Monotonously, field-induced MR peaks around 200 K were also observed in those samples. Similar behaviors were not observed in the Ag-substituted samples.

Effect of Silver Doping on Transport Properties of Bi2Se3: AgxBi2Se3 and Bi2-xAgxSe3

Science.gov (United States)

Zhang, Min; Wei, Zhan-Tao

2018-05-01

Ag-doped Bi2Se3 with the formula AgxBi2Se3 and Bi2-xAgxSe3 were prepared and their electrical and magnetic transport properties have been investigated to study the influence of silver doping on transport properties of Bi2Se3 with different Ag-doped method. All samples exhibited metallic resistivity and the resistivity increased with increasing Ag concentration. The lattice parameter c of Ag-substituted and Ag-intercalated samples displays a contrary change as the Ag concentration increased. For the Ag-intercalated samples, both the resistance upturn were observed in the curves of temperature dependent of resistivity and temperature dependent of magnetoresistance, respectively, indicating that the enhanced surface effect was obtained in those samples. Monotonously, field-induced MR peaks around 200 K were also observed in those samples. Similar behaviors were not observed in the Ag-substituted samples.

Spin texture of Bi2Se3 thin films in the quantum tunneling limit.

Science.gov (United States)

Landolt, Gabriel; Schreyeck, Steffen; Eremeev, Sergey V; Slomski, Bartosz; Muff, Stefan; Osterwalder, Jürg; Chulkov, Evgueni V; Gould, Charles; Karczewski, Grzegorz; Brunner, Karl; Buhmann, Hartmut; Molenkamp, Laurens W; Dil, J Hugo

2014-02-07

By means of spin- and angle-resolved photoelectron spectroscopy we studied the spin structure of thin films of the topological insulator Bi2Se3 grown on InP(111). For thicknesses below six quintuple layers the spin-polarized metallic topological surface states interact with each other via quantum tunneling and a gap opens. Our measurements show that the resulting surface states can be described by massive Dirac cones which are split in a Rashba-like manner due to the substrate induced inversion asymmetry. The inner and the outer Rashba branches have distinct localization in the top and the bottom part of the film, whereas the band apices are delocalized throughout the entire film. Supported by calculations, our observations help in the understanding of the evolution of the surface states at the topological phase transition and provide the groundwork for the realization of two-dimensional spintronic devices based on topological semiconductors.

Protective capping of topological surface states of intrinsically insulating Bi2Te3

Directory of Open Access Journals (Sweden)

Katharina Hoefer

2015-09-01

Full Text Available We have identified epitaxially grown elemental Te as a capping material that is suited to protect the topological surface states of intrinsically insulating Bi2Te3. By using angle-resolved photoemission, we were able to show that the Te overlayer leaves the dispersive bands of the surface states intact and that it does not alter the chemical potential of the Bi2Te3 thin film. From in-situ four-point contact measurements, we observed that the conductivity of the capped film is still mainly determined by the metallic surface states and that the contribution of the capping layer is minor. Moreover, the Te overlayer can be annealed away in vacuum to produce a clean Bi2Te3 surface in its pristine state even after the exposure of the capped film to air. Our findings will facilitate well-defined and reliable ex-situ experiments on the properties of Bi2Te3 surface states with nontrivial topology.

Layer structured bismuth selenides Bi2Se3 and Bi3Se4 for high energy and flexible all-solid-state micro-supercapacitors

Science.gov (United States)

Hao, Chunxue; Wang, Lidan; Wen, Fusheng; Xiang, Jianyong; Li, Lei; Hu, Wentao; Liu, Zhongyuan

2018-02-01

In this work, bismuth selenides (Bi2Se3 and Bi3Se4), both of which have a layered rhombohedral crystal structure, have been found to be useful as electrode materials for supercapacitor applications. In a liquid electrolyte system (6M KOH), Bi2Se3 nanoplates exhibit much better performance as an electrode material than Bi3Se4 nanoparticles do, delivering a higher specific capacitance (272.9 F g-1) than that of Bi3Se4 (193.6 F g-1) at 5 mV s-1. This result may be attributed to the fact that Bi2Se3 nanoplates possess more active electrochemical surfaces for the reversible surface redox reactions owing to their planar quintuple stacked layers (septuple layers for Bi3Se4). To meet the demands of electronic skin, we used a novel flexible annular interdigital structure electrode to support the all-solid-state micro-supercapacitors (AMSCs). The Bi2Se3 AMSC device delivers a much better supercapacitor performance, exhibits a large stack capacitance of 89.5 F cm-3 at 20 mV s-1 (Bi3Se4: 79.1 F cm-3), a high energy density of 17.9 mWh cm-3 and a high power density of 18.9 W cm-3. The bismuth selenides also exhibit good cycle stability, with 95.5% retention after 1000 c for Bi2Se3 (Bi3Se4:90.3%). Clearly, Bi2Se3 nanoplates can be promising electrode materials for flexible annular interdigital AMSCs.

Controlled synthesis of novel 3D dendritic Bi2S3 /cross-linked poly(vinyl alcohol) nanocomposites

International Nuclear Information System (INIS)

Wu, W-T; Shi Lei; Pang Wenmin; Wang Yusong; Zhu Qingren; Xu Guoyong

2006-01-01

Novel spherical three-dimensional (3D) dendritic Bi 2 S 3 /cross-linked poly(vinyl alcohol) (PVA) nanocomposites were successfully synthesized in aqueous solution of amphiphilic polyvinylacetone (PVKA) (ketalization degree D H = 0.549), via one-step in situ decomposition of the complex [Bi(Tu) x ] 3+ under γ-ray irradiation, utilizing the controllable hydrolysis property of PVKA in acidic solution. Herein, PVA chains are obtained from the hydrolysed PVKA. These uniform 3D spherical nanocomposites have a structure similar to that found in the natural lotus leaf, where every microscale papilla on the leaf surface is covered by nanoscale papillae

AC plasma induced modifications in Sb{sub 2}S{sub 3} thin films

Energy Technology Data Exchange (ETDEWEB)

Calixto-Rodriguez, M; Martinez, H [Instituto de Ciencias Fisicas, Universidad Nacional Autonoma de Mexico, Apartado Postal 48-3, 62210, Cuernavaca, Morelos (Mexico); Castillo, F [Instituto de Ciencias Nucleares, Universidad Nacional Autonoma de Mexico, Apartado Postal 70-543, 04510, Mexico D. F. (Mexico); Pena, Y [Universidad Autonoma de Nuevo Leon, Facultad de Ciencias Quimicas, Pedro de Alba s/n, Cd. Universitaria, San Nicolas de los Garza, N.L (Mexico); Sanchez-Juarez, A, E-mail: ciro@nucleares.unam.m [Centro de Investigacion en EnergIa, Universidad Nacional Autonoma de Mexico, Privada Xochicalco s/n Col. Centro, Temixco, Morelos, C.P. 62580 (Mexico)

2010-01-01

Sb{sub 2}S{sub 3} thin films, deposited by the chemical bath deposition method, were treated with N{sub 2} plasma at 3.0 Torr during several minutes. The as-prepared Sb{sub 2}S{sub 3} thin films and films treated with N{sub 2} plasma have been characterized using several techniques. X-ray diffraction studies have shown that plasma treatment induced recrystallization on the as-prepared Sb{sub 2}S{sub 3}thin films. The band gap values decreased from 2.37 to 1.82 eV after plasma treatment, and the electrical conductivity increased from 10{sup 9} to 10{sup 7} ({Omega}cm){sup -1} due to the annealing effect.

X-ray magnetic spectroscopy of MBE-grown Mn-doped Bi2Se3 thin films

Directory of Open Access Journals (Sweden)

L. J. Collins-McIntyre

2014-12-01

Full Text Available We report the growth of Mn-doped Bi2Se3 thin films by molecular beam epitaxy (MBE, investigated by x-ray diffraction (XRD, atomic force microscopy (AFM, SQUID magnetometry and x-ray magnetic circular dichroism (XMCD. Epitaxial films were deposited on c-plane sapphire substrates by co-evaporation. The films exhibit a spiral growth mechanism typical of this material class, as revealed by AFM. The XRD measurements demonstrate a good crystalline structure which is retained upon doping up to ∼7.5 atomic-% Mn, determined by Rutherford backscattering spectrometry (RBS, and show no evidence of the formation of parasitic phases. However an increasing interstitial incorporation of Mn is observed with increasing doping concentration. A magnetic moment of 5.1 μB/Mn is obtained from bulk-sensitive SQUID measurements, and a much lower moment of 1.6 μB/Mn from surface-sensitive XMCD. At ∼2.5 K, XMCD at the Mn L2,3 edge, reveals short-range magnetic order in the films and indicates ferromagnetic order below 1.5 K.

Characterization of Cu3SbS3 thin films grown by thermally diffusing Cu2S and Sb2S3 layers

OpenAIRE

Hussain, Arshad; Ahmed, Rashid; Ali, N.; Shaari, A.; Luo, Jing-Ting; Fu, Yong Qing

2017-01-01

Copper antimony sulphide (Cu3SbS3) with a p-type conductivity and optical band gaps in the range of 1.38 to 1.84 eV is considered to be a promising solar harvesting material with non-toxic and economical elements. In this study, we reported the fabrication of Cu3SbS3 thin films using successive thermal evaporation of Cu2S and Sb2S3 layers followed by annealing in an argon atmosphere at a temperature range of 300-375°C. The structural and optical properties of the as-deposited and annealed fil...

Multiferroic BiFeO{sub 3} thin films: Structural and magnetic characterization

Energy Technology Data Exchange (ETDEWEB)

Ali, Z. [Physics Department, Faculty of Science (Girls Branch), Al-Azhar University, Cairo (Egypt); Atta, A. [National Center for Radiation Research and Technology (NCRRT), Nasr City, Cairo (Egypt); Abbas, Y. [Physics Department, Faculty of Science, Suez Canal University, Ismailia (Egypt); Sedeek, K.; Adam, A.; Abdeltwab, E. [Physics Department, Faculty of Science (Girls Branch), Al-Azhar University, Cairo (Egypt)

2015-02-27

BiFeO{sub 3} (BFO) film has been deposited on indium tin oxide (ITO) substrate by a simple sol–gel spin-coating technique. The crystal phase composition, surface morphology, topography and magnetization measurements of the BFO thin film were investigated using grazing incidence X-ray diffraction (GIXRD), scanning electronic microscope (SEM), atomic force microscope and vibrating sample magnetometer, respectively. GIXRD analysis revealed that the film was fully crystallized and no impure phase was observed. Cross-section SEM results indicated that compact and homogeneous BFO thin film was deposited on ITO with a thickness of about 180 nm. Moreover, most of A and E-symmetry normal modes of R3c BFO were assigned by Raman spectroscopy. We report here that the pure phase BFO film shows ferromagnetism at room temperature with remarkably high saturation magnetization of 63 kA m{sup −1}. Our results are discussed mainly in correlation with the condition of processing technique and destruction of the spiral spin cycloid at interface layers and grain boundaries. - Highlights: • Multiferroic BiFeO{sub 3} (BFO) thin film was prepared by sol–gel spin-coating method. • BFO film w asdeposited on indium tin oxide substrate with a thickness of 180 nm. • The film exhibits pure rhombohedral perovskite structure. • High saturation magnetization was recorded for our film at room temperature.

Study of Sb2S3 thin films deposited by SILAR method

Science.gov (United States)

Deshpande, M. P.; Chauhan, Krishna; Patel, Kiran N.; Rajput, Piyush; Bhoi, Hiteshkumar R.; Chaki, S. H.

2018-05-01

In the present work, we deposited Sb2S3 thin films on glass slide by successive ionic layer adsorption and reaction (SILAR) technique with different time cycles. From EDAX, we could observe that the films were non-stoichiometric and contained few elements from glass slide. X-ray diffraction has shown that these films are orthorhombic in structure from where we have calculated the lattice parameter and crystallize size. SEM images shows that SILAR synthesized Sb2S3 thin films are homogenous and well distributed indicating the formation of uniform thin films at lower concentration. The room temperature Raman spectra of Sb2S3 thin films showed sharp peaks at 250 cm‑1 and 300 cm‑1 for all cases. Room temperature photoluminescence emission spectrum shows broad bands over 430–480 nm range with strong blue emission peak centered at same wavelength of 460 nm (2.70 eV) for all cases.

Synthesis of belt-like BiOBr hierarchical nanostructure with high photocatalytic performance

Energy Technology Data Exchange (ETDEWEB)

Li, Haiping [National Engineering Technology Research Center for Colloidal Materials, Shandong University, Jinan 250100 (China); Liu, Jingyi; Hu, Tingxia [Environment Research Institute, Shandong University, Jinan 250100 (China); Du, Na; Song, Shue [Key Laboratory of Colloid and Interface Chemistry (Ministry of Education), Shandong University, Jinan 250100 (China); Hou, Wanguo, E-mail: wghou@sdu.edu.cn [Key Laboratory of Colloid and Interface Chemistry (Ministry of Education), Shandong University, Jinan 250100 (China)

2016-05-15

Highlights: • BiOBr hierarchical nanobelts (NBs) were solvothermally prepared. • NBs show higher specific surface area and photoabsorption than BiOBr nanosheets. • NBs exhibit higher photoactivity than the nanosheets. - Abstract: One-dimensional (1D) bismuth oxyhalide (BiOX) hierarchical nanostructures are always difficult to prepare. Herein, we report, for the first time, a simple synthesis of BiOBr nanobelts (NBs) via a facile solvothermal route, using bismuth subsalicylate as the template and bismuth source. The BiOBr nanobelts are composed of irregular single crystal nanoparticles with highly exposed (0 1 0) facets. Compared with the BiOBr nanosheets (NSs) with dominant exposed (0 0 1) facets, they exhibit higher photocatalytic activity toward degradation of Rhodamine B and Methylene Blue under visible light irradiation. The higher photocatalytic performance of BiOBr NBs arises from their larger specific surface area and higher photoabsorption capability. This study provides a simple route for synthesis of belt-like Bi-based hierarchical nanostructures.

Sol-gel synthesis of Bi2WO6/graphene thin films with enhanced photocatalytic performance for nitric monoxide oxidation under visible light irradiation

Science.gov (United States)

Sun, Chufeng; Wang, Yanbin; Su, Qiong

2018-06-01

Bi2WO6 and Bi2WO6/graphene thin films were fabricated by spin coating and post annealing at 600 °C for 2 h. In four different thin film samples, the graphene concentration was controlled as 0, 2, 4 and 6 wt%, respectively. The morphology, grain size and elemental distribution of the thin films were characterized by SEM and TEM. The crystallization and crystal phases were determined by XRD patterns, and the existence of graphene in Bi2WO6/graphene composite thin films were confirmed by Raman spectra. The photocatalytic performance of Bi2WO6 and Bi2WO6/graphene thin films was investigated by oxidizing NO under visible light irradiation. The results showed that Bi2WO6/graphene with 4 wt% of graphene showed the highest photocatalytic performance among all samples. This could be attributed to the increased electron conductivity with the presence of graphene. However, a further increased graphene concentration resulted in a decreased photocatalytic performance.

Influence of bismuth doping on the structural and optical properties of ZnS thin films and nanopowders

International Nuclear Information System (INIS)

Mageswari, S; Palanivel, Balan; Dhivya, L; Murugan, Ramaswamy

2013-01-01

Zn (1−x/2) Bi x/3 S (x = 0, 0.03, 0.09) thin films and nanopowders synthesized by the simple chemical bath deposition technique were characterized using x-ray diffraction (XRD), scanning electron microscope, energy dispersive x-ray analysis, an atomic force microscope (AFM) and ultraviolet visible (UV–Vis) and photoluminescence spectroscopy. XRD analysis revealed a sphalerite structure for Zn (1−x/2) Bi x/3 S (x = 0, 0.03, 0.09) thin films. However, the XRD pattern of Zn (1−x/2) Bi x/3 S (x = 0.09) nanopowder revealed the co-existence of both sphalerite and hexagonal (wurtzite) phases. The crystallite size of Zn (1−x/2) Bi x/3 S (x = 0, 0.03, 0.09) nanopowders were found to be in the range of 2–4 nm. AFM studies revealed that the film quality of Zn (1−x/2) Bi x/3 S (x = 0.09) was relatively good compared to other films. A notable decrease in the band gap of both the thin films and nanopowders were observed with incorporation of Bi 3+ in ZnS. These results indicate that Bi doped ZnS can be used to enhance the photocatalytic H 2 -production activity under visible and UV light. (paper)

Bismuth chalcogenide compounds Bi 2 × 3 (X=O, S, Se): Applications in electrochemical energy storage

Energy Technology Data Exchange (ETDEWEB)

Ni, Jiangfeng; Bi, Xuanxuan; Jiang, Yu; Li, Liang; Lu, Jun

2017-04-01

Bismuth chalcogenides Bi2×3 (X=O, S, Se) represent a unique type of materials in diverse polymorphs and configurations. Multiple intrinsic features of Bi2×3 such as narrow bandgap, ion conductivity, and environmental friendliness, have render them attractive materials for a wide array of energy applications. In particular, their rich structural voids and the alloying capability of Bi enable the chalcogenides to be alternative electrodes for energy storage such as hydrogen (H), lithium (Li), sodium (Na) storage and supercapacitors. However, the low conductivity and poor electrochemical cycling are two key challenges for the practical utilization of Bi2×3 electrodes. Great efforts have been devoted to mitigate these challenges and remarkable progresses have been achieved, mainly taking profit of nanotechnology and material compositing engineering. In this short review, we summarize state-of-the-art research advances in the rational design of diverse Bi2×3 electrodes and their electrochemical energy storage performance for H, Li, and Na and supercapacitors. We also highlight the key technical issues at present and provide insights for the future development of bismuth based materials in electrochemical energy storage devices.

Nanostructural origin of semiconductivity and large magnetoresistance in epitaxial NiCo2O4/Al2O3 thin films

Science.gov (United States)

Zhen, Congmian; Zhang, XiaoZhe; Wei, Wengang; Guo, Wenzhe; Pant, Ankit; Xu, Xiaoshan; Shen, Jian; Ma, Li; Hou, Denglu

2018-04-01

Despite low resistivity (~1 mΩ cm), metallic electrical transport has not been commonly observed in inverse spinel NiCo2O4, except in certain epitaxial thin films. Previous studies have stressed the effect of valence mixing and the degree of spinel inversion on the electrical conduction of NiCo2O4 films. In this work, we studied the effect of nanostructural disorder by comparing the NiCo2O4 epitaxial films grown on MgAl2O4 (1 1 1) and on Al2O3 (0 0 1) substrates. Although the optimal growth conditions are similar for the NiCo2O4 (1 1 1)/MgAl2O4 (1 1 1) and the NiCo2O4 (1 1 1)/Al2O3 (0 0 1) films, they show metallic and semiconducting electrical transport, respectively. Post-growth annealing decreases the resistivity of NiCo2O4 (1 1 1)/Al2O3 (0 0 1) films, but the annealed films are still semiconducting. While the semiconductivity and the large magnetoresistance in NiCo2O4 (1 1 1)/Al2O3 (0 0 1) films cannot be accounted for in terms of non-optimal valence mixing and spinel inversion, the presence of anti-phase boundaries between nano-sized crystallites, generated by the structural mismatch between NiCo2O4 and Al2O3, may explain all the experimental observations in this work. These results reveal nanostructural disorder as being another key factor for controlling the electrical transport of NiCo2O4, with potentially large magnetoresistance for spintronics applications.

Surface nanostructuring of TiO2 thin films by ion beam irradiation

International Nuclear Information System (INIS)

Romero-Gomez, P.; Palmero, A.; Yubero, F.; Vinnichenko, M.; Kolitsch, A.; Gonzalez-Elipe, A.R.

2009-01-01

This work reports a procedure to modify the surface nanostructure of TiO 2 anatase thin films through ion beam irradiation with energies in the keV range. Irradiation with N + ions leads to the formation of a layer with voids at a depth similar to the ion-projected range. By setting the ion-projected range a few tens of nanometers below the surface of the film, well-ordered nanorods appear aligned with the angle of incidence of the ion beam. Slightly different results were obtained by using heavier (S + ) and lighter (B + ) ions under similar conditions

Thin film composites in the BiFeO3–Bi4Ti3O12 system obtained by an aqueous solution-gel deposition methodology

Directory of Open Access Journals (Sweden)

Carlos Gumiel

2018-01-01

Full Text Available Thin film multiferroic composites, with a high quantity of interfaces between the different materials, represent a more feasible alternative to single phase systems in which the multifunctional response is usually hampered due to intrinsic physical constraints. Nowadays some of these composites can be produced by applying deposition techniques such as PLD, CVD, MBE or the like, which allow a high degree of crystallographic control. However, despite their effectiveness, all these techniques also involve a high consumption of energy in terms of temperature and/or vacuum. Within this frame, the present contribution proposes a sustainable chemical solution deposition process to prepare thin films of the multiferroic BiFeO3–Bi4Ti3O12 composite system. More specifically an aqueous solution-gel plus spin-coating methodology is employed which also avoids the organic solvents typically used in a conventional sol–gel method, so further keeping an eye on the environmentally friendly conditions. Attempts are conducted that demonstrate how by systematically controlling the processing parameters it is possible to obtain thin film composites with a promising 3-3 type connectivity at temperatures as low as 600 °C.

Thin film composites in the BiFeO3–Bi4Ti3O12 system obtained by an aqueous solution-gel deposition methodology

International Nuclear Information System (INIS)

Gumiel, C.; Vranken, T.; Bernardo, M.S.; Jardiel, T.; Hardy, A.; Van Bael, M.K.; Peiteado, M.

2018-01-01

Thin film multiferroic composites, with a high quantity of interfaces between the different materials, represent a more feasible alternative to single phase systems in which the multifunctional response is usually hampered due to intrinsic physical constraints. Nowadays some of these composites can be produced by applying deposition techniques such as PLD, CVD, MBE or the like, which allow a high degree of crystallographic control. However, despite their effectiveness, all these techniques also involve a high consumption of energy in terms of temperature and/or vacuum. Within this frame, the present contribution proposes a sustainable chemical solution deposition process to prepare thin films of the multiferroic BiFeO3–Bi4Ti3O12 composite system. More specifically an aqueous solution-gel plus spin-coating methodology is employed which also avoids the organic solvents typically used in a conventional sol–gel method, so further keeping an eye on the environmentally friendly conditions. Attempts are conducted that demonstrate how by systematically controlling the processing parameters it is possible to obtain thin film composites with a promising 3-3 type connectivity at temperatures as low as 600°C. [es

Thermodynamic study of the rich-Bi2O3 region of the Bi2O3-ZnO system

Directory of Open Access Journals (Sweden)

de la Rubia, M. A.

2006-06-01

Full Text Available Precise knowledge of the Bi2O3-ZnO system is fundamental to control the functional microstructure of ZnO-based varistors. Also the potential applications of materials based on ZnO and Bi2O3 as dielectric materials in the high frequency range have renewed the interest in this binary system. The aim of the present work is to carry out a thermodynamic analysis of the Bi2O3-ZnO phase diagram, taking into account the existing experimental information. Thermodynamic calculation has been performed according CALPHAD methodology (CALculation of PHAse Diagrams, using the software Thermo-Calc.El conocimiento preciso del sistema Bi2O3-ZnO es una herramienta básica para conseguir el control de la microestructura de los varistores basados en ZnO. Recientemente otros materiales basados en óxidos de cinc y bismuto han mostrado un gran potencial para su uso en aplicaciones como dieléctricos a frecuencias altas, renovando el interés por dicho sistema binario. El objetivo del presente trabajo es realizar una evaluación termodinámica del diagrama de fases consistente para el sistema Bi2O3-ZnO teniendo en cuenta la información experimental existente del mismo. La evaluación termodinámica del sistema se ha llevado a cabo mediante la metodología CALPHAD (CALculation of PHAse Diagrams, empleando el software Thermo- Calc.

Optoelectronic and Photovoltaic Properties of the Air-Stable Organohalide Semiconductor (CH 3 NH 3 ) 3 Bi 2 I 9

KAUST Repository

Abulikemu, Mutalifu

2016-07-14

Lead halide perovskite materials have shown excellent optoelectronic as well as photovoltaic properties. However, the presence of lead and the chemical instability relegate lead halide perovskites to research applications only. Here, we investigate an emerging lead-free and air stable compound (CH3NH3)3Bi2I9 as a non-toxic potential alternative to lead halide perovskites. We have synthesized thin films, powders and millimeter-scale single crystals of (CH3NH3)3Bi2I9 and investigated their structural and optoelectronic properties. We demonstrate that the degree of crystallinity strongly affects the optoelectronic properties of the material, resulting in significantly different band gaps in polycrystalline thin films and single crystals. Surface photovoltage spectroscopy reveals outstanding photocharge generation in the visible (<700 nm), while transient absorption spectroscopy and space charge limited current measurements point to a long exciton lifetime and a high carrier mobility, respectively, similar to lead halide perovskites, pointing to the remarkable potential of this semiconductor. Photovoltaic devices fabricated using this material yield low power conversion efficiency (PCE) to date, but the PCE is expected to rise with improvements in thin film processing and device engineering.

Modified chemical synthesis of porous α-Sm{sub 2}S{sub 3} thin films

Energy Technology Data Exchange (ETDEWEB)

Kumbhar, V.S.; Jagadale, A.D. [Thin Film Physics Laboratory, Department of Physics, Shivaji University, Kolhapur, (M.S.) 416004 (India); Gaikwad, N.S. [Rayat Shikshan Sanstha, Satara, (M.S.) 415 001 (India); Lokhande, C.D., E-mail: l_chandrakant@yahoo.com [Thin Film Physics Laboratory, Department of Physics, Shivaji University, Kolhapur, (M.S.) 416004 (India)

2014-08-15

Highlights: • A novel chemical route to prepare α-Sm{sub 2}S{sub 3} thin films. • A porous honeycomb like morphology of the α-Sm{sub 2}S{sub 3} thin film. • An application of α-Sm{sub 2}S{sub 3} thin film toward its supercapacitive behaviour. - Abstract: The paper reports synthesis of porous α-Sm{sub 2}S{sub 3} thin films using modified chemical synthesis, also known as successive ionic layer adsorption and reaction (SILAR) method. The X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM), atomic force microscopy (AFM), wettability and ultraviolet–visible spectroscopy (UV–vis) techniques are used for the study of structural, elemental, morphological and optical properties of α-Sm{sub 2}S{sub 3} films. An orthorhombic crystal structure of α-Sm{sub 2}S{sub 3} is resulted from XRD study. The SEM and AFM observations showed highly porous α-Sm{sub 2}S{sub 3} film surface. An optical band gap of 2.50 eV is estimated from optical absorption spectrum. The porous α-Sm{sub 2}S{sub 3} thin film tuned for supercapacitive behaviour using cyclic voltammetry and galvanostatic charge discharge showed a specific capacitance and energy density of 294 Fg{sup –1} and 48.9 kW kg{sup –1}, respectively in 1 M LiClO{sub 4}–propylene carbonate electrolyte.

Pseudocapacitive properties of nano-structured anhydrous ruthenium oxide thin film prepared by electrostatic spray deposition and electrochemical lithiation/delithiation

Energy Technology Data Exchange (ETDEWEB)

Park, S.H.; Kim, J.Y.; Kim, K.B. [Division of Materials Science and Engineering, Yonsei University, Seoul (Korea, Republic of)

2010-10-15

Nano-structured anhydrous ruthenium oxide (RuO{sub 2}) thin films were prepared using an electrostatic spray deposition (ESD) technique followed by electrochemical lithiation and delithiation. During the electrochemical lithiation process, RuO{sub 2} decomposed to nano-structured metallic ruthenium Ru with the concomitant formation of Li{sub 2}O. Nano-structured RuO{sub 2} was formed upon subsequent electrochemical extraction of Li from the Ru/Li{sub 2}O nanocomposite. Electrochemical lithiation/deliathiation at different charge/discharge rates (C-rate) was used to control the nano-structure of the anhydrous RuO{sub 2}. Electrochemical lithiation/delithiation of the RuO{sub 2} thin film electrode at different C-rates was closely related to the specific capacitance and high rate capability of the nano-structured anhydrous RuO{sub 2} thin film. Nano-structured RuO{sub 2} thin films prepared by electrochemical lithiation and delithiation at 2C rate showed the highest specific capacitance of 653 F g{sup -1} at 20 mV s{sup -1}, which is more than two times higher than the specific capacitance of 269 F g{sup -1} for the as-prepared RuO{sub 2}. In addition, it showed 14% loss in specific capacitance from 653 F g{sup -1} at 20 mV s{sup -1} to 559 F g{sup -1} at 200 mV s{sup -1}, indicating significant improvement in the high rate capability compared to the 26% loss of specific capacitance of the as-prepared RuO{sub 2} electrode from 269 F g{sup -1} at 20 mV s{sup -1} to 198 F g{sup -1} at 200 mV s{sup -1} for the same change in scan rate. (Abstract Copyright [2010], Wiley Periodicals, Inc.)

Growth of MoO3 nanostructured thin films as a function of O2-partial pressure

Science.gov (United States)

Sharma, Rabindar Kumar; Kumar, Prabhat; Reddy, G. B.

2015-06-01

In this report, we synthesized molybdenum trioxide (α-MoO3) nanostructured thin films (NSTs) with nanoflakes (NFs) on the Ni-coated glass substrates employing plasma assisted sublimation process (PASP) as a function of oxygen partial pressure (PO2). The effect of oxygen partial pressure on structural, morphological, and vibrational properties have been investigated systematically. The structural analysis divulged that all films deposited at different PO2 have pure orthorhombic phase, no impurity phase is detected under the limit of resolution. The morphological studies of samples is carried out by SEM, revealed that features as well as alignment of MoO3 NSTs can be monitored by PO2 and the sample having best features is obtained at 7.5×10-2 Torr. In addition, the more insight information is accomplished by TEM/HRTEM on the best featured sample, which confirmed the single crystalline nature of nanoflakes. The vibrational study of all samples are performed by FTIR, and strongly supports the XRD observations. All the results are in consonance with each other.

Charge carrier localised in zero-dimensional (CH3NH3)3Bi2I9 clusters.